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Sample records for al2o3 passivation layer

  1. Trapped charge densities in Al2O3-based silicon surface passivation layers

    NASA Astrophysics Data System (ADS)

    Jordan, Paul M.; Simon, Daniel K.; Mikolajick, Thomas; Dirnstorfer, Ingo

    2016-06-01

    In Al2O3-based passivation layers, the formation of fixed charges and trap sites can be strongly influenced by small modifications in the stack layout. Fixed and trapped charge densities are characterized with capacitance voltage profiling and trap spectroscopy by charge injection and sensing, respectively. Al2O3 layers are grown by atomic layer deposition with very thin (˜1 nm) SiO2 or HfO2 interlayers or interface layers. In SiO2/Al2O3 and HfO2/Al2O3 stacks, both fixed charges and trap sites are reduced by at least a factor of 5 compared with the value measured in pure Al2O3. In Al2O3/SiO2/Al2O3 or Al2O3/HfO2/Al2O3 stacks, very high total charge densities of up to 9 × 1012 cm-2 are achieved. These charge densities are described as functions of electrical stress voltage, time, and the Al2O3 layer thickness between silicon and the HfO2 or the SiO2 interlayer. Despite the strong variation of trap sites, all stacks reach very good effective carrier lifetimes of up to 8 and 20 ms on p- and n-type silicon substrates, respectively. Controlling the trap sites in Al2O3 layers opens the possibility to engineer the field-effect passivation in the solar cells.

  2. Passivation of type II InAs/GaSb superlattice photodetectors with atomic layer deposited Al2O3

    NASA Astrophysics Data System (ADS)

    Salihoglu, Omer; Muti, Abdullah; Kutluer, Kutlu; Tansel, Tunay; Turan, Rasit; Kocabas, Coskun; Aydinli, Atilla

    2012-06-01

    We have achieved significant improvement in the electrical performance of the InAs/GaSb midwave infrared photodetector (MWIR) by using atomic layer deposited (ALD) aluminium oxide (Al2O3) as a passivation layer. Plasma free and low operation temperature with uniform coating of ALD technique leads to a conformal and defect free coverage on the side walls. This conformal coverage of rough surfaces also satisfies dangling bonds more efficiently while eliminating metal oxides in a self cleaning process of the Al2O3 layer. Al2O3 passivated and unpassivated diodes were compared for their electrical and optical performances. For passivated diodes the dark current density was improved by an order of magnitude at 77 K. The zero bias responsivity and detectivity was 1.33 A/W and 1.9 x 1013 Jones, respectively at 4 μm and 77 K. Quantum efficiency (QE) was determined as %41 for these detectors.

  3. Passivation Effect of Atomic Layer Deposition of Al2O3 Film on HgCdTe Infrared Detectors

    NASA Astrophysics Data System (ADS)

    Zhang, Peng; Ye, Zhen-Hua; Sun, Chang-Hong; Chen, Yi-Yu; Zhang, Tian-Ning; Chen, Xin; Lin, Chun; Ding, Ring-Jun; He, Li

    2016-09-01

    The passivation effect of atomic layer deposition of (ALD) Al2O3 film on a HgCdTe infrared detector was investigated in this work. The passivation effect of Al2O3 film was evaluated by measuring the minority carrier lifetime, capacitance versus voltage ( C- V) characteristics of metal-insulator-semiconductor devices, and resistance versus voltage ( R- V) characteristics of variable-area photodiodes. The minority carrier lifetime, C- V characteristics, and R- V characteristics of HgCdTe devices passivated by ALD Al2O3 film was comparable to those of HgCdTe devices passivated by e-beam evaporation of ZnS/CdTe film. However, the baking stability of devices passivated by Al2O3 film is inferior to that of devices passivated by ZnS/CdTe film. In future work, by optimizing the ALD Al2O3 film growing process and annealing conditions, it may be feasible to achieve both excellent electrical properties and good baking stability.

  4. Atomic layer deposited Al2O3 passivation of type II InAs/GaSb superlattice photodetectors

    NASA Astrophysics Data System (ADS)

    Salihoglu, Omer; Muti, Abdullah; Kutluer, Kutlu; Tansel, Tunay; Turan, Rasit; Kocabas, Coskun; Aydinli, Atilla

    2012-04-01

    Taking advantage of the favorable Gibbs free energies, atomic layer deposited (ALD) aluminum oxide (Al2O3) was used as a novel approach for passivation of type II InAs/GaSb superlattice (SL) midwave infrared (MWIR) single pixel photodetectors in a self cleaning process (λcut-off ˜ 5.1 μm). Al2O3 passivated and unpassivated diodes were compared for their electrical and optical performances. For passivated diodes, the dark current density was improved by an order of magnitude at 77 K. The zero bias responsivity and detectivity was 1.33 A/W and 1.9 × 1013 Jones, respectively at 4 μm and 77 K. Quantum efficiency (QE) was determined as %41 for these detectors. This conformal passivation technique is promising for focal plane array (FPA) applications.

  5. Optical and electrical properties of ZnO nanocrystal thin films passivated by atomic layer deposited Al2O3

    NASA Astrophysics Data System (ADS)

    Choi, Ji-Hyuk; Kim, Jungwoo; Oh, Soong Ju; Kim, Daekyoung; Kim, Yong-Hoon; Chae, Heeyeop; Kim, Hyoungsub

    2016-07-01

    While colloidal semiconductor nanocrystal (NC) is preferred for use in solution-based optoelectronic devices, the large number of surface defects associated with its high surface-to-volume ratio degrades the optimal performance of NC-based devices due to the extensive trapping of free carriers available for charge transport. Here, we studied a simple and effective strategy to control the degree of passivation and doping level of solution-deposited ZnO NC films by infilling with ultra-thin Al2O3 using an atomic layer deposition (ALD) technique. According to various spectroscopic, microstructural, and electrical analyses, the ALD-Al2O3 treatment dramatically reduced the number of surface trap states with high ambient stability while simultaneously supplied excess carriers probably via a remote doping mechanism. As a consequence, the field-effect transistors built using the ZnO NC films with ALD-Al2O3 treatment for an optimal number of cycles exhibited significantly enhanced charge transport.

  6. Activation of Al2O3 passivation layers on silicon by microwave annealing

    NASA Astrophysics Data System (ADS)

    Ziegler, Johannes; Otto, Martin; Sprafke, Alexander N.; Wehrspohn, Ralf B.

    2013-11-01

    Thin aluminum oxide layers deposited on silicon by thermal atomic layer deposition can be used to reduce the electronic recombination losses by passivating the silicon surfaces. To activate the full passivation ability of such layers, a post-deposition annealing step at moderate temperatures (≈400 ∘C, duration≈30 min) is required. Such an annealing step is commonly done in an oven in air, nitrogen, or forming gas atmosphere. In this work, we investigate the ability to reduce the duration of the annealing step by heating the silicon wafer with a microwave source. The annealing time is significantly reduced to durations below 1 min while achieving effective minority carrier lifetimes similar or higher to that of conventionally oven-annealed samples.

  7. High-temperature degradation in plasma-enhanced chemical vapor deposition Al2O3 surface passivation layers on crystalline silicon

    NASA Astrophysics Data System (ADS)

    Kühnhold, Saskia; Saint-Cast, Pierre; Kafle, Bishal; Hofmann, Marc; Colonna, Francesco; Zacharias, Margit

    2014-08-01

    In this publication, the activation and degradation of the passivation quality of plasma-enhanced chemical vapor deposited aluminum oxide (Al2O3) layers with different thicknesses (10 nm, 20 nm, and 110 nm) on crystalline silicon (c-Si) during long and high temperature treatments are investigated. As indicated by Fourier Transform Infrared Spectroscopy, the concentration of tetrahedral and octahedral sites within the Al2O3 layer changes during temperature treatments and correlates with the amount of negative fixed charges at the Si/Al2O3 interface, which was detected by Corona Oxide Characterization of Semiconductors. Furthermore, during a temperature treatment at 820 °C for 30 min, the initial amorphous Al2O3 layer crystallize into the γ-Al2O3 structure and was enhanced by additional oxygen as was proven by x-ray diffraction measurements and underlined by Density Functional Theory simulations. The crystallization correlates with the increase of the optical density up to 20% while the final Al2O3 layer thickness decreases at the same time up to 26%. All observations described above were detected to be Al2O3 layer thickness dependent. These observations reveal novel aspects to explain the temperature induced passivation and degradation mechanisms of Al2O3 layers at a molecular level like the origin of the negative fixe charges at the Si/SiOx/Al2O3 interface or the phenomena of blistering. Moreover, the crystal phase of Al2O3 does not deliver good surface passivation due to a high concentration of octahedral sites leading to a lower concentration of negative fixed charges at the interface.

  8. Low-Temperature Process for Atomic Layer Chemical Vapor Deposition of an Al2O3 Passivation Layer for Organic Photovoltaic Cells.

    PubMed

    Kim, Hoonbae; Lee, Jihye; Sohn, Sunyoung; Jung, Donggeun

    2016-05-01

    Flexible organic photovoltaic (OPV) cells have drawn extensive attention due to their light weight, cost efficiency, portability, and so on. However, OPV cells degrade quickly due to organic damage by water vapor or oxygen penetration when the devices are driven in the atmosphere without a passivation layer. In order to prevent damage due to water vapor or oxygen permeation into the devices, passivation layers have been introduced through methods such as sputtering, plasma enhanced chemical vapor deposition, and atomic layer chemical vapor deposition (ALCVD). In this work, the structural and chemical properties of Al2O3 films, deposited via ALCVD at relatively low temperatures of 109 degrees C, 200 degrees C, and 300 degrees C, are analyzed. In our experiment, trimethylaluminum (TMA) and H2O were used as precursors for Al2O3 film deposition via ALCVD. All of the Al2O3 films showed very smooth, featureless surfaces without notable defects. However, we found that the plastic flexible substrate of an OPV device passivated with 300 degrees C deposition temperature was partially bended and melted, indicating that passivation layers for OPV cells on plastic flexible substrates need to be formed at temperatures lower than 300 degrees C. The OPV cells on plastic flexible substrates were passivated by the Al2O3 film deposited at the temperature of 109 degrees C. Thereafter, the photovoltaic properties of passivated OPV cells were investigated as a function of exposure time under the atmosphere.

  9. Enhanced photovoltaic performance of inverted pyramid-based nanostructured black-silicon solar cells passivated by an atomic-layer-deposited Al2O3 layer.

    PubMed

    Chen, Hong-Yan; Lu, Hong-Liang; Ren, Qing-Hua; Zhang, Yuan; Yang, Xiao-Feng; Ding, Shi-Jin; Zhang, David Wei

    2015-10-07

    Inverted pyramid-based nanostructured black-silicon (BS) solar cells with an Al2O3 passivation layer grown by atomic layer deposition (ALD) have been demonstrated. A multi-scale textured BS surface combining silicon nanowires (SiNWs) and inverted pyramids was obtained for the first time by lithography and metal catalyzed wet etching. The reflectance of the as-prepared BS surface was about 2% lower than that of the more commonly reported upright pyramid-based SiNW BS surface over the whole of the visible light spectrum, which led to a 1.7 mA cm(-2) increase in short circuit current density. Moreover, the as-prepared solar cells were further passivated by an ALD-Al2O3 layer. The effect of annealing temperature on the photovoltaic performance of the solar cells was investigated. It was found that the values of all solar cell parameters including short circuit current, open circuit voltage, and fill factor exhibit a further increase under an optimized annealing temperature. Minority carrier lifetime measurements indicate that the enhanced cell performance is due to the improved passivation quality of the Al2O3 layer after thermal annealing treatments. By combining these two refinements, the optimized SiNW BS solar cells achieved a maximum conversion efficiency enhancement of 7.6% compared to the cells with an upright pyramid-based SiNWs surface and conventional SiNx passivation.

  10. Al2O3/SiON stack layers for effective surface passivation and anti-reflection of high efficiency n-type c-Si solar cells

    NASA Astrophysics Data System (ADS)

    Thi Thanh Nguyen, Huong; Balaji, Nagarajan; Park, Cheolmin; Triet, Nguyen Minh; Le, Anh Huy Tuan; Lee, Seunghwan; Jeon, Minhan; Oh, Donhyun; Dao, Vinh Ai; Yi, Junsin

    2017-02-01

    Excellent surface passivation and anti-reflection properties of double-stack layers is a prerequisite for high efficiency of n-type c-Si solar cells. The high positive fixed charge (Q f) density of N-rich hydrogenated amorphous silicon nitride (a-SiNx:H) films plays a poor role in boron emitter passivation. The more the refractive index ( n ) of a-SiNx:H is decreased, the more the positive Q f of a-SiNx:H is increased. Hydrogenated amorphous silicon oxynitride (SiON) films possess the properties of amorphous silicon oxide (a-SiOx) and a-SiNx:H with variable n and less positive Q f compared with a-SiNx:H. In this study, we investigated the passivation and anti-reflection properties of Al2O3/SiON stacks. Initially, a SiON layer was deposited by plasma enhanced chemical vapor deposition with variable n and its chemical composition was analyzed by Fourier transform infrared spectroscopy. Then, the SiON layer was deposited as a capping layer on a 10 nm thick Al2O3 layer, and the electrical and optical properties were analyzed. The SiON capping layer with n = 1.47 and a thickness of 70 nm resulted in an interface trap density of 4.74 = 1010 cm-2 eV-1 and Q f of -2.59 = 1012 cm-2 with a substantial improvement in lifetime of 1.52 ms after industrial firing. The incorporation of an Al2O3/SiON stack on the front side of the n-type solar cells results in an energy conversion efficiency of 18.34% compared to the one with Al2O3/a-SiNx:H showing 17.55% efficiency. The short circuit current density and open circuit voltage increase by up to 0.83 mA cm-2 and 12 mV, respectively, compared to the Al2O3/a-SiNx:H stack on the front side of the n-type solar cells due to the good anti-reflection and front side surface passivation.

  11. Photo-stability and time-resolved photoluminescence study of colloidal CdSe/ZnS quantum dots passivated in Al2O3 using atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Cheng, Chih-Yi; Mao, Ming-Hua

    2016-08-01

    We report photo-stability enhancement of colloidal CdSe/ZnS quantum dots (QDs) passivated in Al2O3 thin film using the atomic layer deposition (ALD) technique. 62% of the original peak photoluminescence (PL) intensity remained after ALD. The photo-oxidation and photo-induced fluorescence enhancement effects of both the unpassivated and passivated QDs were studied under various conditions, including different excitation sources, power densities, and environment. The unpassivated QDs showed rapid PL degradation under high excitation due to strong photo-oxidation in air while the PL intensity of Al2O3 passivated QDs was found to remain stable. Furthermore, recombination dynamics of the unpassivated and passivated QDs were investigated by time-resolved measurements. The average lifetime of the unpassivated QDs decreases with laser irradiation time due to photo-oxidation. Photo-oxidation creates surface defects which reduces the QD emission intensity and enhances the non-radiative recombination rate. From the comparison of PL decay profiles of the unpassivated and passivated QDs, photo-oxidation-induced surface defects unexpectedly also reduce the radiative recombination rate. The ALD passivation of Al2O3 protects QDs from photo-oxidation and therefore avoids the reduction of radiative recombination rate. Our experimental results demonstrated that passivation of colloidal QDs by ALD is a promising method to well encapsulate QDs to prevent gas permeation and to enhance photo-stability, including the PL intensity and carrier lifetime in air. This is essential for the applications of colloidal QDs in light-emitting devices.

  12. Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks

    NASA Astrophysics Data System (ADS)

    Dingemans, G.; Beyer, W.; van de Sanden, M. C. M.; Kessels, W. M. M.

    2010-10-01

    The role of hydrogen in Si surface passivation is experimentally identified for Al2O3 (capping) films synthesized by atomic layer deposition. By using stacks of SiO2 and deuterated Al2O3, we demonstrate that hydrogen is transported from Al2O3 to the underlying SiO2 already at relatively low annealing temperatures of 400 °C. This leads to a high level of chemical passivation of the interface. Moreover, the thermal stability of the passivation up to 800 °C was significantly improved by applying a thin Al2O3 capping film on the SiO2. The hydrogen released from the Al2O3 film favorably influences the passivation of Si interface defects.

  13. Al2O3 passivation effect in HfO2·Al2O3 laminate structures grown on InP substrates.

    PubMed

    Kang, Hang-Kyu; Kang, Yu-Seon; Kim, Dae-Kyoung; Baik, Min; Song, Jin Dong; An, Youngseo; Kim, Hyoungsub; Cho, Mann-Ho

    2017-04-07

    The passivation effect of an Al2O3 layer on electrical properties were investigated in HfO2--Al2O3 laminate structures grown on InP substrate by atomic layer deposition (ALD). The chemical state using HR-XPS showed that interfacial reactions were dependent on the presence of the Al2O3 passivation layer and its sequence in the HfO2--Al2O3 laminate structures. The Al2O3/HfO2/Al2O3 structure showed the best electrical characteristics, due to the interfacial reaction, compared with those of different stacking structures. The top Al2O3 layer suppressed the interdiffusion of oxidizing species into the HfO2 films, while the bottom Al2O3 layer blocked the outdiffusion of In and P atoms. As a result, the formation of In-O bonds was effectively suppressed in the Al2O3/HfO2/Al2O3/InP structure than that of HfO2-on-InP system. Moreover, conductance data revealed that the Al2O3/ layer on InP reduces the midgap traps to 2.6 × 10(12) eV(-1)cm(-2) (compared with that of HfO2/InP = 5.4 × 10(12) eV(-1)cm(-2)). The suppression of gap states caused by the outdiffusion of In atoms significantly controls the degradation of capacitors caused by leakage current through the stacked oxide layers.

  14. Surface plasmon-enhanced nanoporous GaN-based green light-emitting diodes with Al2O3 passivation layer.

    PubMed

    Yu, Zhi-Guo; Zhao, Li-Xia; Wei, Xue-Cheng; Sun, Xue-Jiao; An, Ping-Bo; Zhu, Shi-Chao; Liu, Lei; Tian, Li-Xin; Zhang, Feng; Lu, Hong-Xi; Wang, Jun-Xi; Zeng, Yi-Ping; Li, Jin-Min

    2014-10-20

    A surface plasmon (SP)-enhanced nanoporous GaN-based green LED based on top-down processing technology has been successfully fabricated. This SP-enhanced LED consists of nanopores passing through the multiple quantum wells (MQWs) region, with Ag nanorod array filled in the nanopores for SP-MQWs coupling and thin Al(2)O(3) passivation layer for electrical protection. Compared with nanoporous LED without Ag nanorods, the electroluminescence (EL) peak intensity for the SP-enhanced LED was greatly enhanced by 380% and 220% at an injection current density of 1 and 20A/cm(2), respectively. Our results show that the increased EL intensity is mainly attributed to the improved internal quantum efficiency of LED due to the SP coupling between Ag nanorods and MQWs.

  15. Stability of Al2O3 and Al2O3/a-SiNx:H stacks for surface passivation of crystalline silicon

    NASA Astrophysics Data System (ADS)

    Dingemans, G.; Engelhart, P.; Seguin, R.; Einsele, F.; Hoex, B.; van de Sanden, M. C. M.; Kessels, W. M. M.

    2009-12-01

    The thermal and ultraviolet (UV) stability of crystalline silicon (c-Si) surface passivation provided by atomic layer deposited Al2O3 was compared with results for thermal SiO2. For Al2O3 and Al2O3/a-SiNx:H stacks on 2 Ω cm n-type c-Si, ultralow surface recombination velocities of Seff<3 cm/s were obtained and the passivation proved sufficiently stable (Seff<14 cm/s) against a high temperature "firing" process (>800 °C) used for screen printed c-Si solar cells. Effusion measurements revealed the loss of hydrogen and oxygen during firing through the detection of H2 and H2O. Al2O3 also demonstrated UV stability with the surface passivation improving during UV irradiation.

  16. III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface

    NASA Astrophysics Data System (ADS)

    Yokoyama, Masafumi; Yasuda, Tetsuji; Takagi, Hideki; Miyata, Noriyuki; Urabe, Yuji; Ishii, Hiroyuki; Yamada, Hisashi; Fukuhara, Noboru; Hata, Masahiko; Sugiyama, Masakazu; Nakano, Yoshiaki; Takenaka, Mitsuru; Takagi, Shinichi

    2010-04-01

    We have developed III-V-semiconductor-on-insulator (III-V-OI) structures on Si wafers with excellent bottom interfaces between In0.53Ga0.47As-OI channel layers and atomic-layer-deposited Al2O3 (ALD-Al2O3) buried oxides (BOXs). A surface activated bonding process and the sulfur passivation pretreatment have realized the excellent In0.53Ga0.47As-OI/ALD-Al2O3 BOX bottom interface properties. As a result, the III-V-OI n-channel metal-insulator-semiconductor field-effect transistors under the back-gate configuration showed the peak mobility of 1800 cm2/V s and the higher electron mobility than the Si universal one even in the high effective electric field range because of the reduction in the surface roughness and fixed charges.

  17. Data of ALD Al2O3 rear surface passivation, Al2O3 PERC cell performance, and cell efficiency loss mechanisms of Al2O3 PERC cell.

    PubMed

    Huang, Haibing; Lv, Jun; Bao, Yameng; Xuan, Rongwei; Sun, Shenghua; Sneck, Sami; Li, Shuo; Modanese, Chiara; Savin, Hele; Wang, Aihua; Zhao, Jianhua

    2017-04-01

    This data article is related to the recently published article '20.8% industrial PERC solar cell: ALD Al2O3 rear surface passivation, efficiency loss mechanisms analysis and roadmap to 24%' (Huang et al., 2017) [1]. This paper is about passivated emitter and rear cell (PERC) structures and it describes the quality of the Al2O3 rear-surface passivation layer deposited by atomic layer deposition (ALD), in relation to the processing parameters (e.g. pre-clean treatment, deposition temperature, growth per cycle, and film thickness) and to the cell efficiency loss mechanisms. This dataset is made public in order to contribute to the limited available public data on industrial PERC cells, to be used by other researchers.

  18. Electrical properties of GaAs metal-oxide-semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal-organic vapor deposition/atomic layer deposition hybrid system

    NASA Astrophysics Data System (ADS)

    Aoki, Takeshi; Fukuhara, Noboru; Osada, Takenori; Sazawa, Hiroyuki; Hata, Masahiko; Inoue, Takayuki

    2015-08-01

    This paper presents a compressive study on the fabrication and optimization of GaAs metal-oxide-semiconductor (MOS) structures comprising a Al2O3 gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer prepared in situ via metal-organic chemical vapor deposition (MOCVD). The established protocol afforded self-limiting growth of Al2O3 in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al2O3 layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA) conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resulting MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance-voltage (C-V) characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (Dit) near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce Dit to below 2 × 1012 cm-2 eV-1. Using a (111)A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.

  19. S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates

    NASA Astrophysics Data System (ADS)

    Aguirre-Tostado, F. S.; Milojevic, M.; Choi, K. J.; Kim, H. C.; Hinkle, C. L.; Vogel, E. M.; Kim, J.; Yang, T.; Xuan, Y.; Ye, P. D.; Wallace, R. M.

    2008-08-01

    A systematic study of the interface engineering and dielectric properties of nanolaminated hafnium aluminate on GaAs is presented. The dielectrics were deposited using atomic layer deposition of alternating cycles of HfO2 and Al2O3 on GaAs substrates. High resolution x-ray photoelectron spectroscopy (XPS) showed differences in space charge amounts at the interface for the two surface treatments [NH4OH or (NH4)2S]. In-situ XPS analysis shows that chemical bonding to oxygen across the nanolaminate film is independent of the interface formation conditions. In addition, the GaAs surface treated with (NH4)2S shows a decreased band bending and slightly thinner films with respect to NH4OH.

  20. Atomic layer deposition of Al2O3 on H-passivated Si. I. Initial surface reaction pathways with H/Si(100)-2×1

    NASA Astrophysics Data System (ADS)

    Halls, Mathew D.; Raghavachari, Krishnan

    2003-06-01

    Aluminum oxide (Al2O3) grown by atomic layer deposition (ALD) is currently under investigation for use as a high-κ gate dielectric alternative to SiO2. Cluster calculations employing hybrid density functional theory have been carried out to examine the chemical reaction pathways between the ALD precursors, trimethylaluminum (TMA) and H2O, with the H/Si(100)-2×1 surface. Results obtained using Si9H14 and Si15H20, dimer and double dimer clusters to represent the surface active site are in good agreement, providing a consistent view of reaction energetics on the H/Si(100)-2×1 surface. The adsorption energies for TMA and H2O on the surface are calculated to be 0.02 and 0.15 eV, respectively. For the reaction between H2O and the H/Si(100)-2×1 surface, hydroxylation of the surface accompanied by loss of H2 was found to be the preferred pathway having an activation energy and overall reaction enthalpy of 1.60 eV and -0.75 eV, both of which are ⩾0.70 eV lower than the corresponding values for the possible H/D exchange reaction. TMA exposure of the H/Si(100)-2×1 surface favors the deposition of -Al(CH3)2 with loss of CH4, having a barrier height of 1.30 eV and reaction enthalpy of -0.31 eV, which are 0.10 and 0.40 eV lower than the surface methylation pathway (H/CH3 exchange) and 2.64 and 0.45 eV lower in energy than the H2 loss reaction, that results in the deposition of -CH2-Al(CH3)2 to the surface. Therefore, the dominant reactions identified in this work are those with direct implication in the Al2O3 ALD growth mechanism, leading to the formation of Si-O and Si-Al species on the H/Si(100)-2×1 surface.

  1. Effects of plasma-enhanced chemical vapor deposition (PECVD) on the carrier lifetime of Al2O3 passivation stack

    NASA Astrophysics Data System (ADS)

    Cho, Kuk-Hyun; Cho, Young Joon; Chang, Hyo Sik; Kim, Kyung-Joong; Song, Hee Eun

    2015-09-01

    We investigated the effect on the minority carrier lifetime of atomic layer deposition (ALD) Al2O3 passivation by a plasma-enhanced chemical vapor deposition (PECVD) SiON layer in Si/Al2O3/SiON-passivated structure. The lifetime variation of the Al2O3/SiON stack layer was found to depend on both the plasma power and the deposition temperature during the PECVD SiON process and to show better thermal stability than the Al2O3/SiNx:H stack under the same deposition conditions. The lifetime after a high-temperature firing process was improved dramatically at the PECVD deposition temperature of 200 °C. Our results provide a significant clue to reason for the improvement of the passivation performance for passivated emitter and rear contact (PERC) silicon solar cells.

  2. Realizing a facile and environmental-friendly fabrication of high-performance multi-crystalline silicon solar cells by employing ZnO nanostructures and an Al2O3 passivation layer

    PubMed Central

    Chen, Hong-Yan; Lu, Hong-Liang; Sun, Long; Ren, Qing-Hua; Zhang, Hao; Ji, Xin-Ming; Liu, Wen-Jun; Ding, Shi-Jin; Yang, Xiao-Feng; Zhang, David Wei

    2016-01-01

    Nowadays, the multi-crystalline silicon (mc-Si) solar cells dominate the photovoltaic industry. However, the current acid etching method on mc-Si surface used by firms can hardly suppress the average reflectance value below 25% in the visible light spectrum. Meanwhile, the nitric acid and the hydrofluoric contained in the etching solution is both environmental unfriendly and highly toxic to human. Here, a mc-Si solar cell based on ZnO nanostructures and an Al2O3 spacer layer is demonstrated. The eco-friendly fabrication is realized by low temperature atomic layer deposition of Al2O3 layer as well as ZnO seed layer. Moreover, the ZnO nanostructures are prepared by nontoxic and low cost hydro-thermal growth process. Results show that the best passivation quality of the n+ -type mc-Si surface can be achieved by balancing the Si dangling bond saturation level and the negative charge concentration in the Al2O3 film. Moreover, the average reflectance on cell surface can be suppressed to 8.2% in 400–900 nm range by controlling the thickness of ZnO seed layer. With these two combined refinements, a maximum solar cell efficiency of 15.8% is obtained eventually. This work offer a facile way to realize the environmental friendly fabrication of high performance mc-Si solar cells. PMID:27924911

  3. Realizing a facile and environmental-friendly fabrication of high-performance multi-crystalline silicon solar cells by employing ZnO nanostructures and an Al2O3 passivation layer

    NASA Astrophysics Data System (ADS)

    Chen, Hong-Yan; Lu, Hong-Liang; Sun, Long; Ren, Qing-Hua; Zhang, Hao; Ji, Xin-Ming; Liu, Wen-Jun; Ding, Shi-Jin; Yang, Xiao-Feng; Zhang, David Wei

    2016-12-01

    Nowadays, the multi-crystalline silicon (mc-Si) solar cells dominate the photovoltaic industry. However, the current acid etching method on mc-Si surface used by firms can hardly suppress the average reflectance value below 25% in the visible light spectrum. Meanwhile, the nitric acid and the hydrofluoric contained in the etching solution is both environmental unfriendly and highly toxic to human. Here, a mc-Si solar cell based on ZnO nanostructures and an Al2O3 spacer layer is demonstrated. The eco-friendly fabrication is realized by low temperature atomic layer deposition of Al2O3 layer as well as ZnO seed layer. Moreover, the ZnO nanostructures are prepared by nontoxic and low cost hydro-thermal growth process. Results show that the best passivation quality of the n+ -type mc-Si surface can be achieved by balancing the Si dangling bond saturation level and the negative charge concentration in the Al2O3 film. Moreover, the average reflectance on cell surface can be suppressed to 8.2% in 400–900 nm range by controlling the thickness of ZnO seed layer. With these two combined refinements, a maximum solar cell efficiency of 15.8% is obtained eventually. This work offer a facile way to realize the environmental friendly fabrication of high performance mc-Si solar cells.

  4. Au/n-InP Schottky diodes using an Al2O3 interfacial layer grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Kim, Hogyoung; Kim, Min Soo; Yoon, Seung Yu; Choi, Byung Joon

    2017-02-01

    We investigated the effect of an Al2O3 interfacial layer grown by atomic layer deposition on the electrical properties of Au Schottky contacts to n-type InP. Considering barrier inhomogeneity, modified Richardson plots yielded a Richardson constant of 8.4 and 7.5 Acm-2K-2, respectively, for the sample with and without the Al2O3 interlayer (theoretical value of 9.4 Acm-2K-2 for n-type InP). The dominant reverse current flow for the sample with an Al2O3 interlayer was found to be Poole-Frenkel emission. From capacitance-voltage measurements, it was observed that the capacitance for the sample without the Al2O3 interlayer was frequency dependent. Sputter-induced defects as well as structural defects were passivated effectively with an Al2O3 interlayer.

  5. Characterization and prevention of humidity related degradation of atomic layer deposited Al2O3

    NASA Astrophysics Data System (ADS)

    Rückerl, Andreas; Zeisel, Roland; Mandl, Martin; Costina, Ioan; Schroeder, Thomas; Zoellner, Marvin H.

    2017-01-01

    Atomic layer deposited aluminum oxide (ALD-Al2O3) is a dielectric material, which is widely used in organic light emitting diodes in order to prevent their organic layers from humidity related degradation. Unfortunately, there are strong hints that in some cases, ALD-Al2O3 itself is suffering from humidity related degradation. Especially, high temperature and high humidity seem to enhance ALD-Al2O3 degradation strongly. For this reason, the degradation behavior of ALD-Al2O3 films at high temperature and high humidity was investigated in detail and a way to prevent it from degradation was searched. The degradation behavior is analyzed in the first part of this paper. Using infrared absorbance measurements and X-ray diffraction, boehmite (γ-AlOOH) was identified as a degradation product. In the second part of the paper, it is shown that ALD-Al2O3 films can be effectively protected from degradation using a silicon oxide capping. The deposition of very small amounts of silicon in a molecular beam epitaxy system and an X-ray photoelectron spectroscopy investigation of the chemical bonding between the silicon and the ALD-Al2O3 surface led to the conclusion that a silicon termination of the ALD-Al2O3 surface (Al*-O-SiOx) is able to stop humidity related degradation of the underlying ALD-Al2O3 films. The third part of the paper shows that the protection mechanism of the silicon termination is probably due to the strong tendency of silicic acid to resilificate exposed ALD-Al2O3 surfaces. The protective effect of a simple silicon source on an ALD-Al2O3 surface is shown exemplary and the related chemical reactions are presented.

  6. Retardation mechanism of ultrathin Al2O3 interlayer on Y2O3 passivated gallium nitride surface.

    PubMed

    Quah, Hock Jin; Cheong, Kuan Yew

    2014-05-28

    A systematic investigation was carried out by incorporating an ultrathin aluminum oxide (Al2O3) as an interlayer between yttrium oxide (Y2O3) passivation layer and GaN substrate. The sandwiched samples were then subjected to postdeposition annealing in oxygen ambient from 400 to 800 °C. The Al2O3 interlayer was discovered to play a significant role in slowing down inward diffusion of oxygen through the Y2O3 passivation layer as well as in impeding outward diffusion of Ga(3+) and N(3-) from the decomposed GaN surface. These beneficial effects have suppressed subsequent formation of interfacial layer. A mechanism in association with the function of Al2O3 as an interlayer was suggested and discussed. The mechanism was explicitly described on the basis of the obtained results from X-ray diffraction, X-ray photoelectron spectroscopy, energy-filtered transmission electron microscopy (TEM), high resolution TEM, and electron energy loss spectroscopy line scan. A correlation between the proposed mechanism and metal-oxide-semiconductor characteristics of Y2O3/Al2O3/GaN structure has been proposed.

  7. Al2O3 on Black Phosphorus by Atomic Layer Deposition: An in Situ Interface Study.

    PubMed

    Zhu, Hui; McDonnell, Stephen; Qin, Xiaoye; Azcatl, Angelica; Cheng, Lanxia; Addou, Rafik; Kim, Jiyoung; Ye, Peide D; Wallace, Robert M

    2015-06-17

    In situ "half cycle" atomic layer deposition (ALD) of Al2O3 was carried out on black phosphorus ("black-P") surfaces with modified phosphorus oxide concentrations. X-ray photoelectron spectroscopy is employed to investigate the interfacial chemistry and the nucleation of the Al2O3 on black-P surfaces. This work suggests that exposing a sample that is initially free of phosphorus oxide to the ALD precursors does not result in detectable oxidation. However, when the phosphorus oxide is formed on the surface prior to deposition, the black-P can react with both the surface adventitious oxygen contamination and the H2O precursor at a deposition temperature of 200 °C. As a result, the concentration of the phosphorus oxide increases after both annealing and the atomic layer deposition process. The nucleation rate of Al2O3 on black-P is correlated with the amount of oxygen on samples prior to the deposition. The growth of Al2O3 follows a "substrate inhibited growth" behavior where an incubation period is required. Ex situ atomic force microscopy is also used to investigate the deposited Al2O3 morphologies on black-P where the Al2O3 tends to form islands on the exfoliated black-P samples. Therefore, surface functionalization may be needed to get a conformal coverage of Al2O3 on the phosphorus oxide free samples.

  8. Sulfur passivation for the formation of Si-terminated Al2O3/SiGe(0 0 1) interfaces

    NASA Astrophysics Data System (ADS)

    Sardashti, Kasra; Hu, Kai-Ting; Tang, Kechao; Park, Sangwook; Kim, Hyonwoong; Madisetti, Shailesh; McIntyre, Paul; Oktyabrsky, Serge; Siddiqui, Shariq; Sahu, Bhagawan; Yoshida, Noami; Kachian, Jessica; Kummel, Andrew

    2016-03-01

    Sulfur passivation is used to electrically and chemically passivate the silicon-germanium (SiGe) surfaces before and during the atomic layer deposition (ALD) of aluminum oxide (Al2O3). The electrical properties of the interfaces were examined by variable frequency capacitance-voltage (C-V) spectroscopy. Interface compositions were determined by angle-resolved X-ray photoelectron spectroscopy (AR-XPS). The sulfur adsorbs to a large fraction of surface sites on the SiGe(0 0 1) surface, protecting the surface from deleterious surface reactions during processing. Sulfur passivation (a) improved the air stability of the cleaned surfaces prior to ALD, (b) increased the stability of the surface during high-temperature deposition, and (c) increased the Al2O3 ALD nucleation density on SiGe, thereby lowering the leakage current. S passivation suppressed formation of Gesbnd O bonds at the interface, leaving the majority of the Al2O3-SiGe interface terminated with direct Sisbnd Osbnd Al bonding.

  9. Electrical Double Layer Capacitance in a Graphene-embedded Al2O3 Gate Dielectric

    PubMed Central

    Ki Min, Bok; Kim, Seong K.; Jun Kim, Seong; Ho Kim, Sung; Kang, Min-A; Park, Chong-Yun; Song, Wooseok; Myung, Sung; Lim, Jongsun; An, Ki-Seok

    2015-01-01

    Graphene heterostructures are of considerable interest as a new class of electronic devices with exceptional performance in a broad range of applications has been realized. Here, we propose a graphene-embedded Al2O3 gate dielectric with a relatively high dielectric constant of 15.5, which is about 2 times that of Al2O3, having a low leakage current with insertion of tri-layer graphene. In this system, the enhanced capacitance of the hybrid structure can be understood by the formation of a space charge layer at the graphene/Al2O3 interface. The electrical properties of the interface can be further explained by the electrical double layer (EDL) model dominated by the diffuse layer. PMID:26530817

  10. Electrical Double Layer Capacitance in a Graphene-embedded Al2O3 Gate Dielectric.

    PubMed

    Ki Min, Bok; Kim, Seong K; Jun Kim, Seong; Ho Kim, Sung; Kang, Min-A; Park, Chong-Yun; Song, Wooseok; Myung, Sung; Lim, Jongsun; An, Ki-Seok

    2015-11-04

    Graphene heterostructures are of considerable interest as a new class of electronic devices with exceptional performance in a broad range of applications has been realized. Here, we propose a graphene-embedded Al2O3 gate dielectric with a relatively high dielectric constant of 15.5, which is about 2 times that of Al2O3, having a low leakage current with insertion of tri-layer graphene. In this system, the enhanced capacitance of the hybrid structure can be understood by the formation of a space charge layer at the graphene/Al2O3 interface. The electrical properties of the interface can be further explained by the electrical double layer (EDL) model dominated by the diffuse layer.

  11. Interface of atomic layer deposited Al2O3 on H-terminated silicon

    NASA Astrophysics Data System (ADS)

    Gao, K. Y.; Speck, F.; Emtsev, K.; Seyller, Th.; Ley, L.; Oswald, M.; Hansch, W.

    2006-07-01

    Al2O3 films 1 to 20 nm thick were deposited as alternative high- gate dielectric on hydrogen-terminated silicon by Atomic Layer Deposition (ALD) and characterized by Synchrotron X-ray Photoelectron Spec-troscopy (SXPS), Fourier Transform Infrared (FTIR) absorption spectroscopy and admittance measure-ments. The SXPS results indicate that about 60% of the original Si-H surface bonds are preserved at the Al2O3/Si interface and this is confirmed by monitoring the Si-H stretching modes by FTIR spectroscopy in the Attenuated Total Reflection (ATR) mode both before and after ALD of Al2O3. The remaining 40% of Si-H bonds are replaced by Si-O bonds as verified by SXPS. In addition, a fraction of a monolayer of SiO2 forms on top of the Al2O3 dielectric during deposition. The presence of OH-groups at a level of 3% of the total oxygen content was detected throughout the Al2O3 layer through a chemically shifted O 1s component in SXPS. Admittance measurements give a dielectric constant of 9.12, but a relatively high density of interface traps between 1011 and 1012 cm-2 eV-1.

  12. Electrowetting properties of atomic layer deposited Al2O3 decorated silicon nanowires

    NASA Astrophysics Data System (ADS)

    Rajkumar, K.; Rajavel, K.; Cameron, D. C.; Mangalaraj, D.; Rajendrakumar, R. T.

    2015-06-01

    This paper reports the electrowetting properties of liquid droplet on superhydrophobic silicon nanowires with Atomic layer deposited (ALD) Al2O3 as dielectric layer. Silicon wafer were etched by metal assisted wet chemical etching with silver as catalyst. ALD Al2O3 films of 10nm thickness were conformally deposited over silicon nanowires. Al2O3 dielectric film coated silicon nanowires was chemically modified with Trichloro (1H, 1H, 2H, 2H-perfluorooctyl) silane to make it superhydrophobic(SHP). The contact angle was measured and all the samples exhibited superhydrophobic nature with maximum contact angles of 163° and a minimum contact angle hysteresis of 6°. Electrowetting induced a maximum reversible decrease of the contact angle of 20°at 150V in air.

  13. Surface passivation and optical characterization of Al2O3/a-SiCx stacks on c-Si substrates.

    PubMed

    López, Gema; Ortega, Pablo R; Voz, Cristóbal; Martín, Isidro; Colina, Mónica; Morales, Anna B; Orpella, Albert; Alcubilla, Ramón

    2013-01-01

    The aim of this work is to study the surface passivation of aluminum oxide/amorphous silicon carbide (Al2O3/a-SiCx) stacks on both p-type and n-type crystalline silicon (c-Si) substrates as well as the optical characterization of these stacks. Al2O3 films of different thicknesses were deposited by thermal atomic layer deposition (ALD) at 200 °C and were complemented with a layer of a-SiCx deposited by plasma-enhanced chemical vapor deposition (PECVD) to form anti-reflection coating (ARC) stacks with a total thickness of 75 nm. A comparative study has been carried out on polished and randomly textured wafers. We have experimentally determined the optimum thickness of the stack for photovoltaic applications by minimizing the reflection losses over a wide wavelength range (300-1200 nm) without compromising the outstanding passivation properties of the Al2O3 films. The upper limit of the surface recombination velocity (S eff,max) was evaluated at a carrier injection level corresponding to 1-sun illumination, which led to values below 10 cm/s. Reflectance values below 2% were measured on textured samples over the wavelength range of 450-1000 nm.

  14. Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization

    PubMed Central

    2017-01-01

    A novel method to form ultrathin, uniform Al2O3 layers on graphene using reversible hydrogen plasma functionalization followed by atomic layer deposition (ALD) is presented. ALD on pristine graphene is known to be a challenge due to the absence of dangling bonds, leading to nonuniform film coverage. We show that hydrogen plasma functionalization of graphene leads to uniform ALD of closed Al2O3 films down to 8 nm in thickness. Hall measurements and Raman spectroscopy reveal that the hydrogen plasma functionalization is reversible upon Al2O3 ALD and subsequent annealing at 400 °C and in this way does not deteriorate the graphene’s charge carrier mobility. This is in contrast with oxygen plasma functionalization, which can lead to a uniform 5 nm thick closed film, but which is not reversible and leads to a reduction of the charge carrier mobility. Density functional theory (DFT) calculations attribute the uniform growth on both H2 and O2 plasma functionalized graphene to the enhanced adsorption of trimethylaluminum (TMA) on these surfaces. A DFT analysis of the possible reaction pathways for TMA precursor adsorption on hydrogenated graphene predicts a binding mechanism that cleans off the hydrogen functionalities from the surface, which explains the observed reversibility of the hydrogen plasma functionalization upon Al2O3 ALD.

  15. Atomic layer deposition of highly-doped Er:Al2O3 and Tm:Al2O3 for silicon-based waveguide amplifiers (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Roenn, John; Karvonen, Lasse; Pyymäki-Perros, Alexander; Peyghambarian, Nasser; Lipsanen, Harri; Säynätjoki, Antti; Sun, Zhipei

    2016-05-01

    Recently, rare-earth doped waveguide amplifiers (REDWAs) have drawn significant attention as a promising solution to on-chip amplification of light in silicon photonics and integrated optics by virtue of their high excited state lifetime (up to 10 ms) and broad emission spectrum (up to 200 nm) at infrared wavelengths. In the family of rare-earths, at least erbium, holmium, thulium, neodymium and ytterbium have been demonstrated to be good candidates for amplifier operation at moderate concentrations (< 0.1 %). However, efficient amplifier operation in REDWAs is a very challenging task because high concentration of ions (<0.1%) is required in order to produce reasonable amplification over short device length. Inevitably, high concentration of ions leads to energy-transfer between neighboring ions, which results as decreased gain and increased noise in the amplifier system. It has been shown that these energy-transfer mechanisms in highly-doped gain media are inversely proportional to the sixth power of the distance between the ions. Therefore, novel fabrication techniques with the ability to control the distribution of the rare-earth ions within the gain medium are urgently needed in order to fabricate REDWAs with high efficiency and low noise. Here, we show that atomic layer deposition (ALD) is an excellent technique to fabricate highly-doped (<1%) RE:Al2O3 gain materials by using its nanoscale engineering ability to delicately control the incorporation of RE ions during the deposition. In our experiment, we fabricated Er:Al2O3 and Tm:Al2O3 thin films with ALD by varying the concentration of RE ions from 1% to 7%. By measuring the photoluminescence response of the fabricated samples, we demonstrate that it is possible to incorporate up to 5% of either Er- or Tm-ions in Al2O3 host before severe quenching occurs. We believe that this technique can be extended to other RE ions as well. Therefore, our results show the exceptionality of ALD as a deposition technique for

  16. Atomic layer deposition of Al2O3 on H-passivated Si: Al(CH3)2OH surface reactions with H/Si(100)-2×1

    NASA Astrophysics Data System (ADS)

    Halls, Mathew D.; Raghavachari, Krishnan; Frank, Martin M.; Chabal, Yves J.

    2003-10-01

    Infrared absorption studies of Al(CH3)3 interacting with H-terminated Si reveal that O incorporation from gas-phase impurities may be a crucial factor in interface formation in atomic layer deposition. Hybrid density-functional calculations have therefore been carried out on silicon cluster models to investigate the possible pathways for reaction between the important atomic layer deposition side-reaction product Al(CH3)2OH (DMAOH) and the H/Si(100)-2×1 surface. Comparisons with the analogous surface reactions for Al(CH3)3 and H2O are made. In general, the DMAOH surface reaction pathways are characterized by an activation of reactions involving the OH groups and suppression of CH3 group reactions, compared to Al(CH3)3 and H2O. A unique reaction pathway for DMAOH and the H/Si(100)-2×1 surface is identified resulting in the deposition of -O-Al(CH3)2 on the surface, which is significant since it represents an atomic-layer interface between Si and Al2O3. This reaction has an energy barrier of 1.3 eV and is the most thermodynamically favored pathway with an exothermicity of 0.9 eV.

  17. Atomic layer deposition of Al2O3 on NF3-pre-treated graphene

    NASA Astrophysics Data System (ADS)

    Junige, Marcel; Oddoy, Tim; Yakimova, Rositsa; Darakchieva, Vanya; Wenger, Christian; Lupina, Grzegorz; Kitzmann, Julia; Albert, Matthias; Bartha, Johann W.

    2015-06-01

    Graphene has been considered for a variety of applications including novel nanoelectronic device concepts. However, the deposition of ultra-thin high-k dielectrics on top of graphene has still been challenging due to graphene's lack of dangling bonds. The formation of large islands and leaky films has been observed resulting from a much delayed growth initiation. In order to address this issue, we tested a pre-treatment with NF3 instead of XeF2 on CVD graphene as well as epitaxial graphene monolayers prior to the Atomic Layer Deposition (ALD) of Al2O3. All experiments were conducted in vacuo; i. e. the pristine graphene samples were exposed to NF3 in the same reactor immediately before applying 30 (TMA-H2O) ALD cycles and the samples were transferred between the ALD reactor and a surface analysis unit under high vacuum conditions. The ALD growth initiation was observed by in-situ real-time Spectroscopic Ellipsometry (irtSE) with a sampling rate above 1 Hz. The total amount of Al2O3 material deposited by the applied 30 ALD cycles was cross-checked by in-vacuo X-ray Photoelectron Spectroscopy (XPS). The Al2O3 morphology was determined by Atomic Force Microscopy (AFM). The presence of graphene and its defect status was examined by in-vacuo XPS and Raman Spectroscopy before and after the coating procedure, respectively.

  18. Non-volatile Al2O3 Memory using Nanoscale Al-rich Al2O3 Thin Film as a Charge Storage Layer

    NASA Astrophysics Data System (ADS)

    Nakata, Shunji; Saito, Kunio; Shimada, Masaru

    2006-04-01

    This article describes the fabrication process and capacitance-voltage (C-V) characteristics of a new non-volatile Al2O3 memory with nanoscale thin film deposited by electron-cyclotron-resonance sputtering. Al-rich Al2O3 shows characteristics somewhere between Al and Al2O3 in the refractive index and wet etching rate. C-V characteristics of Al-rich Al2O3 memory show a large hysteresis window due to the Al-rich structure, while there is no hysteresis window in the case of stoichiometric Al2O3. This memory is expected to stay non-volatile for several years or more because the capacitance value after writing and erasing operation remained almost unchanged after 4 h at T=85 °C. Also, another new memory structure comprising SiO2/Al2O3 and the Al-rich Al2O3 structure is proposed, which features increased mobility due to the reduction of electron scattering at the Si/Al2O3 interface.

  19. Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic

    NASA Astrophysics Data System (ADS)

    Lei, Wenwen; Li, Xingcun; Chen, Qiang; Wang, Zhengduo

    2012-02-01

    Atomic layer deposition (ALD) technique is used in the preparation of organic/inorganic layers, which requires uniform surfaces with their thickness down to several nanometers. For film with such thickness, the growth mode defined as the arrangement of clusters on the surface during the growth is of significance. In this work, Al2O3 thin film was deposited on various interfacial species of pre-treated polyethylene terephthalate (PET, 12 μm) by plasma assisted atomic layer deposition (PA-ALD), where trimethyl aluminium was used as the Al precursor and O2 as the oxygen source. The interfacial species, -NH3, -OH, and -COOH as well as SiCHO (derived from monomer of HMDSO plasma), were grafted previously by plasma and chemical treatments. The growth mode of PA-ALD Al2O3 was then investigated in detail by combining results from in-situ diagnosis of spectroscopic ellipsometry (SE) and ex-situ characterization of as-deposited layers from the morphologies scanned by atomic force microscopy (AFM). In addition, the oxygen transmission rates (OTR) of the original and treated plastic films were measured. The possible reasons for the dependence of the OTR values on the surface species were explored.

  20. NMR Spectroscopy of the Hydrated Layer of Composite Particles Based on Nanosized Al2O3 and Vitreous Humor

    NASA Astrophysics Data System (ADS)

    Turov, V. V.; Gerashchenko, I. I.; Markina, A. I.

    2013-11-01

    The hydrated layer of composite particles prepared using Al2O3 and cattle vitreous humor was investigated using NMR spectroscopy. It was found that water bound to Al2O3 nanoparticles was present in the form of clusters with different degrees of association and energies of interaction with the surface. Water bound to the surface of the Al2O3/vitreous humor composite became more uniform upon immobilization of vitreous humor components on the surface of the Al2O3. With this, the clusters of adsorbed water had characteristics that were close to those found in air and weakly polar CHCl3 media. Addition of polar CH3CN led to the formation of very small water clusters. PMR spectra of the surface of the Al2O3/vitreous humor composite in the presence of trifluoroacetic acid differentiated four types of hydrated structures that differed in the degree of water association.

  1. Conduction mechanisms in thin atomic layer deposited Al2O3 layers

    NASA Astrophysics Data System (ADS)

    Spahr, Holger; Montzka, Sebastian; Reinker, Johannes; Hirschberg, Felix; Kowalsky, Wolfgang; Johannes, Hans-Hermann

    2013-11-01

    Thin Al2O3 layers of 2-135 nm thickness deposited by thermal atomic layer deposition at 80 °C were characterized regarding the current limiting mechanisms by increasing voltage ramp stress. By analyzing the j(U)-characteristics regarding ohmic injection, space charge limited current (SCLC), Schottky-emission, Fowler-Nordheim-tunneling, and Poole-Frenkel-emission, the limiting mechanisms were identified. This was performed by rearranging and plotting the data in a linear scale, such as Schottky-plot, Poole-Frenkel-plot, and Fowler-Nordheim-plot. Linear regression then was applied to the data to extract the values of relative permittivity from Schottky-plot slope and Poole-Frenkel-plot slope. From Fowler-Nordheim-plot slope, the Fowler-Nordheim-energy-barrier was extracted. Example measurements in addition to a statistical overview of the results of all investigated samples are provided. Linear regression was applied to the region of the data that matches the realistic values most. It is concluded that ohmic injection and therefore SCLC only occurs at thicknesses below 12 nm and that the Poole-Frenkel-effect is no significant current limiting process. The extracted Fowler-Nordheim-barriers vary in the range of up to approximately 4 eV but do not show a specific trend. It is discussed whether the negative slope in the Fowler-Nordheim-plot could in some cases be a misinterpreted trap filled limit in the case of space charge limited current.

  2. Characteristics of nanocomposite ZrO2/Al2O3 films deposited by plasma-enhanced atomic layer deposition.

    PubMed

    Yun, Sun Jin; Lim, Jung Wook; Kim, Hyun-Tak

    2007-11-01

    Nanocomposite ZrO2/Al2O3 (ZAO) films were deposited on Si by plasma-enhanced atomic layer deposition and the film characteristics including interfacial oxide formation, dielectric constant (k), and electrical breakdown strength were investigated without post-annealing process. In both the mixed and nano-laminated ZAO films, the thickness of the interfacial oxide layer (T(IL)) was considerably reduced compared to ZrO2 and Al2O3 films. The T(IL) was 0.8 nm in nano-composite films prepared at a mixing ratio (ZrO2:Al2O3) of 1:1. The breakdown strength and the leakage current level were greatly improved by adding Al2O3 as little as 7.9% compared to that of ZrO2 and were enhanced more with increasing content of Al2O3. The k of ZrO2 and mixed ZAO (Al2O3 7.9%) films were 20.0 and 16.5, respectively. These results indicate that the addition of Al2O3 to ZrO2 greatly improves the electrical properties with less cost of k compared to the addition of SiO2.

  3. Surface passivation of gallium nitride by ultrathin RF-magnetron sputtered Al2O3 gate.

    PubMed

    Quah, Hock Jin; Cheong, Kuan Yew

    2013-08-14

    An ultrathin RF-magnetron sputtered Al2O3 gate on GaN subjected to postdeposition annealing at 800 °C in O2 ambient was systematically investigated. A cross-sectional energy-filtered transmission electron microscopy revealed formation of crystalline Al2O3 gate, which was supported by X-ray diffraction analysis. Various current conduction mechanisms contributing to leakage current of the investigated sample were discussed and correlated with metal-oxide-semiconductor characteristics of this sample.

  4. A nanoplate-like α-Al2O3 out-layered Al2O3-ZrO2 coating fabricated by micro-arc oxidation for hip joint prosthesis

    NASA Astrophysics Data System (ADS)

    Zhang, Lan; Zhang, Wenting; Han, Yong; Tang, Wu

    2016-01-01

    A nanoplate-like α-Al2O3 out-layered Al2O3-ZrO2 coating was fabricated on Zr substrate by micro-arc oxidation (MAO). The structure, formation mechanism, anti-wear property and aging behavior of the coating were explored. The obtained results show that the coating is composed of Al2O3 and ZrO2; the amount and crystallinity of Al2O3 increase gradually from inner layer to the coating surface; monoclinic ZrO2 (m-ZrO2) and tetragonal ZrO2 (t-ZrO2) are both present in the coating, and the ratio of t-ZrO2/m-ZrO2 increases with closing to the coating surface by a "constraint" mechanism of Al2O3; the coating surface mainly consists of nanoplate-like α-Al2O3, and a small amount of nanocrystallized m- and t-ZrO2. The superimposition of α-Al2O3 growth unit on {0 0 0 1} face should be prohibited by PO43- during the MAO process, resulting in the formation of nanoplate-like α-Al2O3 on the coating surface. Compared with pure Zr, the coating shows noticeable improvement in wear-resistance. For aging behavior, although more t-ZrO2 in the coating is transformed to m-ZrO2 with increasing aging time, wear loss increases slightly. It indicates that the nanoplate-like α-Al2O3 out-layered Al2O3-ZrO2 is a potential coating for articular head replacement.

  5. CoFe2/Al2O3/PMNPT multiferroic heterostructures by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Zhou, Ziyao; Grocke, Garrett; Yanguas-Gil, Angel; Wang, Xinjun; Gao, Yuan; Sun, Nianxiang; Howe, Brandon; Chen, Xing

    2016-05-01

    Multiferroic materials and applications allow electric bias control of magnetism or magnetic bias control of polarization, enabling fast, compact, energy-efficient devices in RF/microwave communication systems such as filters, shifters, and antennas; electronics devices such as inductors and capacitors; and other magnetic material related applications including sensors and memories. In this manuscript, we utilize atomic layer deposition technology to grow magnetic CoFe metallic thin films onto PMNPT, with a ˜110 Oe electric field induced ferromagnetic resonance field shift in the CoFe/Al2O3/PMNPT multiferroic heterostructure. Our work demonstrates an atomic layer deposition fabricated multiferroic heterostructure with significant tunability and shows that the unique thin film growth mechanism will benefit integrated multiferroic application in near future.

  6. Effect of atomic layer deposition temperature on current conduction in Al2O3 films formed using H2O oxidant

    NASA Astrophysics Data System (ADS)

    Hiraiwa, Atsushi; Matsumura, Daisuke; Kawarada, Hiroshi

    2016-08-01

    To develop high-performance, high-reliability gate insulation and surface passivation technologies for wide-bandgap semiconductor devices, the effect of atomic layer deposition (ALD) temperature on current conduction in Al2O3 films is investigated based on the recently proposed space-charge-controlled field emission model. Leakage current measurement shows that Al2O3 metal-insulator-semiconductor capacitors formed on the Si substrates underperform thermally grown SiO2 capacitors at the same average field. However, using equivalent oxide field as a more practical measure, the Al2O3 capacitors are found to outperform the SiO2 capacitors in the cases where the capacitors are negatively biased and the gate material is adequately selected to reduce virtual dipoles at the gate/Al2O3 interface. The Al2O3 electron affinity increases with the increasing ALD temperature, but the gate-side virtual dipoles are not affected. Therefore, the leakage current of negatively biased Al2O3 capacitors is approximately independent of the ALD temperature because of the compensation of the opposite effects of increased electron affinity and permittivity in Al2O3. By contrast, the substrate-side sheet of charge increases with increasing ALD temperature above 210 °C and hence enhances the current of positively biased Al2O3 capacitors more significantly at high temperatures. Additionally, an anomalous oscillatory shift of the current-voltage characteristics with ALD temperature was observed in positively biased capacitors formed by low-temperature (≤210 °C) ALD. This shift is caused by dipoles at the Al2O3/underlying SiO2 interface. Although they have a minimal positive-bias leakage current, the low-temperature-grown Al2O3 films cause the so-called blisters problem when heated above 400 °C. Therefore, because of the absence of blistering, a 450 °C ALD process is presently the most promising technology for growing high-reliability Al2O3 films.

  7. Effects of channel structure consisting of ZnO/Al2O3 multilayers on thin-film transistors fabricated by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Cui, Guodong; Han, Dedong; Dong, Junchen; Cong, Yingying; Zhang, Xiaomi; Li, Huijin; Yu, Wen; Zhang, Shengdong; Zhang, Xing; Wang, Yi

    2017-04-01

    By applying a novel active layer comprising ZnO/Al2O3 multilayers, we have successfully fabricated fully transparent high-performance thin-film transistors (TFTs) with a bottom gate structure by atomic layer deposition (ALD) at low temperature. The effects of various ZnO/Al2O3 multilayers were studied to improve the morphological and electrical properties of the devices. We found that the ZnO/Al2O3 multilayers have a significant impact on the performance of the TFTs, and that the TFTs with the ZnO/15-cycle Al2O3/ZnO structure exhibit superior performance with a low threshold voltage (V TH) of 0.9 V, a high saturation mobility (μsat) of 145 cm2 V‑1 s‑1, a steep subthreshold swing (SS) of 162 mV/decade, and a high I on/I off ratio of 3.15 × 108. The enhanced electrical properties were explained by the improved crystalline nature of the channel layer and the passivation effect of the Al2O3 layer.

  8. Synthesis of CoFe/Al2O3 composite nanoparticles as the impedance matching layer of wideband multilayer absorber

    NASA Astrophysics Data System (ADS)

    Zhen, L.; Gong, Y. X.; Jiang, J. T.; Xu, C. Y.; Shao, W. Z.; Liu, P.; Tang, J.

    2011-04-01

    CoFe/Al2O3 composite nanoparticles were successfully prepared by hydrogen-thermally reducing cobalt aluminum ferrite. Compared with CoFe alloy nanoparticles, the permeability of CoFe/Al2O3 composite nanoparticles was remarkably enhanced and an improved impedance characteristic was achieved due to the introduction of insulated Al2O3. A multilayer absorber with CoFe/Al2O3 composite nanoparticles as the impedance matching layer and CoFe nanoflake as the dissipation layer was designed by using genetic algorithm, in which an ultrawide operation frequency bandwidth over 2.5-18 GHz was obtained. The microwave absorption performance in both normal and oblique incident case was evaluated by using electromagnetic simulator. The backward radar cross-section (RCS) was decreased at least 10 dB over a wide frequency range by covering the multilayer absorber on the surface of perfect electrical conductive plate.

  9. Enhanced density of negative fixed charges in Al2O3 layers on Si through a subsequent deposition of TiO2

    NASA Astrophysics Data System (ADS)

    Schneider, Thomas; Ziegler, Johannes; Kaufmann, Kai; Ilse, Klemens; Sprafke, Alexander; Wehrspohn, Ralf B.

    2016-04-01

    The passivation of silicon surfaces play an important role for achieving high-efficiency crystalline silicon solar cells. In this work, a stack system comprising of 20nm Al2O3 with a 22nm TiO2 topping layer was deposited on p-type Si using thermal atomic layer deposition (ALD) and was investigated regarding its passivation quality. Quasi-steady-state photo conductance (QSSPC) measurements reveal that the minority carrier lifetime at an injection density of 1015cm-3 increased from 1.10ms to 1.96ms after the deposition of TiO2, which shows that the deposition of TiO2 onto Al2O3 is capable of enhancing its passivation quality. Capacity voltage (CV) measurements show that the amount of negative charges in the dielectric layer has increased from -2.4·1012cm-2 to -6.3·1012cm-2 due to the deposition of TiO2. The location of the additional charges was analyzed in this work by etching the dielectric layer stack in several steps. After each step CV measurements were performed. It is found that the additional negative charges are created within the Al2O3 layer. Additionally, ToF-SIMS measurements were performed to check for diffusion processes within the Al2O3 layer.

  10. Atomic layer deposition of TiO2 / Al2O3 films for optical applications

    NASA Astrophysics Data System (ADS)

    Triani, Gerry; Evans, Peter J.; Mitchell, David R. G.; Attard, Darren J.; Finnie, Kim S.; James, Michael; Hanley, Tracey; Latella, Bruno; Prince, Kathryn E.; Bartlett, John

    2005-09-01

    Atomic layer deposition (ALD) is an important technology for depositing functional coatings on accessible, reactive surfaces with precise control of thickness and nanostructure. Unlike conventional chemical vapour deposition, where growth rate is dependent on reactant flux, ALD employs sequential surface chemical reactions to saturate a surface with a (sub-) monolayer of reactive compounds such as metal alkoxides or covalent halides, followed by reaction with a second compound such as water to deposit coatings layer-by-layer. A judicious choice of reactants and processing conditions ensures that the reactions are self-limiting, resulting in controlled film growth with excellent conformality to the substrate. This paper investigates the deposition and characterisation of multi-layer TiO2 /Al2O3 films on a range of substrates, including silicon <100>, soda glass and polycarbonate, using titanium tetrachloride/water and trimethylaluminium/water as precursor couples. Structure-property correlations were established using a suite of analytical tools, including transmission electron microscopy (TEM), secondary ion mass spectrometry (SIMS), X-ray reflectometry (XRR) and spectroscopic ellipsometry (SE). The evolution of nanostructure and composition of multi-layer high/low refractive index stacks are discussed as a function of deposition parameters.

  11. Quartz crystal microbalance studies of Al2O3 atomic layer deposition using trimethylaluminum and water at 125 degrees C.

    PubMed

    Wind, R A; George, S M

    2010-01-28

    Al(2)O(3) atomic layer deposition (ALD) growth with Al(CH(3))(3) (trimethylaluminum (TMA)) and H(2)O as the reactants was examined at the relatively low temperature of 125 degrees C using quartz crystal microbalance (QCM) measurements. The total Al(2)O(3) ALD mass gain per cycle (MGPC) and MGPCs during the individual TMA and H(2)O reactions were measured versus TMA and H(2)O exposures. The Al(2)O(3) MGPC increased with increasing H(2)O and TMA exposures at fixed TMA and H(2)O exposures, respectively. However, the TMA and H(2)O reactions were not completely self-limiting. The slower surface reaction kinetics at lower temperature may require very long exposures for the reactions to reach completion. The Al(2)O(3) MGPCs increased quickly versus H(2)O exposure and slowly reached limiting values that were only weakly dependent on the TMA doses. Small TMA exposures were also sufficient for the Al(2)O(3) MGPCs to reach different limiting values for different H(2)O doses. The TMA MGPCs increased for higher TMA exposures at all H(2)O exposures. In contrast, the H(2)O MGPCs decreased for higher TMA exposures at all H(2)O exposures. This decrease may occur from more dehydroxylation at larger hydroxyl coverages after the H(2)O exposures. The hydroxyl coverage after the H(2)O exposure was dependent only on the H(2)O exposure. The Al(2)O(3) MGPC was also linearly dependent on the hydroxyl coverage after the H(2)O dose. Both the observed hydroxyl coverage versus H(2)O exposure and the Al(2)O(3) ALD growth versus H(2)O and TMA exposures were fit using modified Langmuir adsorption isotherm expressions where the pressures are replaced with exposures. These results should be useful for understanding low-temperature Al(2)O(3) ALD, which is important for coating organic, polymeric, and biological substrates.

  12. Critical tensile and compressive strains for cracking of Al2O3 films grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Jen, Shih-Hui; Bertrand, Jacob A.; George, Steven M.

    2011-04-01

    Al2O3 atomic layer deposition (ALD) is a model ALD system and Al2O3 ALD films are excellent gas diffusion barrier on polymers. However, little is known about the response of Al2O3 ALD films to strain and the potential film cracking that would restrict the utility of gas diffusion barrier films. To understand the mechanical limitations of Al2O3 ALD films, the critical strains at which the Al2O3 ALD films will crack were determined for both tensile and compressive strains. The tensile strain measurements were obtained using a fluorescent tagging technique to image the cracks. The results showed that the critical tensile strain is higher for thinner thicknesses of the Al2O3 ALD film on heat-stabilized polyethylene naphthalate (HSPEN) substrates. A low critical tensile strain of 0.52% was measured for a film thickness of 80 nm. The critical tensile strain increased to 2.4% at a film thickness of 5 nm. In accordance with fracture mechanics modeling, the critical tensile strains and the saturation crack densities scaled as (1/h)1/2 where h is the Al2O3 ALD film thickness. The fracture toughness for cracking, KIC, of the Al2O3 ALD film was also determined to be KIC = 2.30 MPa m1/2. Thinner Al2O3 ALD film thicknesses also had higher critical strains for cracking from compressive strains. Field-emission scanning electron microscopy (FE-SEM) images revealed that Al2O3 ALD films with thicknesses of 30-50 nm on Teflon fluorinated ethylene propylene (FEP) substrates cracked at a critical compressive strain of ˜1.0%. The critical compressive strain increased to ˜2.0% at a film thickness of ˜20 nm. A comparison of the critical tensile strains on HSPEN substrates and critical compressive strains on Teflon FEP substrates revealed some similarities. The critical strain was ˜1.0% for film thicknesses of 30-50 nm for both tensile and compressive strains. The critical compressive strain then increased more rapidly than the critical tensile strain for thinner films with thicknesses

  13. Regimes of leakage current in ALD-processed Al2O3 thin-film layers

    NASA Astrophysics Data System (ADS)

    Spahr, Holger; Reinker, Johannes; Bülow, Tim; Nanova, Diana; Johannes, Hans-Hermann; Kowalsky, Wolfgang

    2013-04-01

    A recently known phenomenon of thin oxide layers with thicknesses below approximately 40 nm is the increase in their breakdown electric field, called disruptive strength, towards lower thicknesses. This offers the possibility of examining the current-electric field characteristics at higher electric field strengths without an early electric breakdown. In this paper, we report on the identification of a current regime of trap-free square law and the buildup of an S-shaped current-electric field characteristic curve. This observation for atomic layer deposition (ALD)-processed Al2O3 layers has not been mentioned in the literature so far. Additionally, a modern model of space charge limited current is used to fit the S-shaped characteristic and extract the associated parameters, such as mobility, density of states, and the energy band gap between the conduction band and the trap state. In this context, the Poole-Frenkel effect is neglected in the model to fit our measurements towards the current increase after the trap filled limit.

  14. Thermal stability of surface and interface structure of atomic layer deposited Al2O3 on H-terminated silicon

    NASA Astrophysics Data System (ADS)

    Gao, K. Y.; Speck, F.; Emtsev, K.; Seyller, Th.; Ley, L.

    2007-11-01

    Using the atomic layer deposition technique, 1.2nm Al2O3 films were deposited as high-k gate dielectric layer on hydrogen-terminated silicon and annealed in vacuum and pure hydrogen in order to elucidate the effects of growth and annealing on the structure of film, interface, and surface. As analytical tools, high resolution core level spectroscopy using synchrotron radiation as variable photon source and Fourier Transform Infrared absorption spectroscopy in the attenuated total refraction mode were employed. For Al2O3 on H-terminated Si(111) and (100) surfaces the Si-H bonds are preserved at the interface, while Si-O-Al bonds provide the atomically abrupt interface between Al2O3 and Si. The chemical and structural integrity of the interface is maintained upon annealing except for a gradual loss of Si-H bonds. Growth of a SiO2 layer is observed after annealing, that is unambiguously located at the Al2O3 surface and not at the interface. Stress-induced emission of Si atoms from the interface is identified as the source of SiO2 based on a substantial broadening of the Si 2p core lines. A thermally induced reaction between Si and Al2O3 to form volatile SiO and Al2O is suggested to be responsible for the significant thickness reduction of Al2O3 that accompanies annealing at temperatures of 750°C. Conclusions for the likely effects of forming gas anneals on Al2O3/Si are drawn from this work.

  15. Enhancement of the photoluminescence in Er-doped Al2O3 fabricated by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Rönn, John; Karvonen, Lasse; Pyymäki-Perros, Alexander; Peyghambarian, Nasser; Lipsanen, Harri; Säynätjoki, Antti; Sun, Zhipei

    2016-02-01

    We show the enhancement of the photoluminescence at λ = 1:5 μm in highly-doped (> 1021 cm-3) Er-Al2O3 samples by controlling the vertical distance between the Er-ions using atomic layer deposition (ALD) technique. Er2O3 and Al2O3 were deposited on top of silicon in an alternating fashion with ALD. Five Er2O3-Al2O3 samples were fabricated by keeping the amount of Er2O3 constant but changing the thickness of the Al2O3-layers between the Er2O3-layers. The PL spectra of the samples reveal that the PL signal enhances up to 90% when the vertical distance (the number of Al2O3-layers) between the Er-ions increases. The PL enhancement can be related to the reduction of up-conversion signal at 532 and 650 nm in the Er-ions. Our results demonstrate that ALD is an excellent technique to fabricate and to optimize Er-doped materials due to its unique depositions properties.

  16. Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals

    NASA Astrophysics Data System (ADS)

    Kim, Eun Ji; Wang, Lingquan; Asbeck, Peter M.; Saraswat, Krishna C.; McIntyre, Paul C.

    2010-01-01

    Charge-trapping defects in Pt/Al2O3/In0.53Ga0.47As metal-oxide-semiconductor capacitors and their passivation by hydrogen are investigated in samples with abrupt oxide/III-V interfaces. Tunneling of electrons into defect states (border traps) in the atomic layer deposited Al2O3 near the oxide/semiconductor interface is found to control the frequency dispersion of the capacitance in accumulation. Hydrogen anneals effectively passivate border traps in the oxide, in addition to some of the midgap states that control carrier generation in the channel. This is evident in the reduced frequency dispersion in accumulation, reduced capacitance-voltage stretch-out through depletion, and suppression of the inversion carrier response in capacitance-voltage measurements.

  17. Diamond field-effect transistors for RF power electronics: Novel NO2 hole doping and low-temperature deposited Al2O3 passivation

    NASA Astrophysics Data System (ADS)

    Kasu, Makoto

    2017-01-01

    Diamond possesses a combination of exceptional physical properties and is expected to be used as a semiconductor material in high-efficiency and high-power electronic devices. In this study, hole doping was observed when using NO2 molecules on a H-diamond surface. The activation energy of hole concentration in NO2/H-diamond was measured as 0.006 eV, and holes were fully activated at room temperature. A thermal stabilization of the hole channel was realized by passivation with an atomic-layer-deposited Al2O3 layer. The passivation method enabled the realization of a thermally stable high-performance diamond field-effect transistor (FET), which exhibited high-performance DC and RF characteristics. NO2 hole-doping and Al2O3-passivation technologies enabled reproducible measurements of MOS structure electric properties. Such technologies also facilitated observations of two-dimensional holes at the MOS interface and type-II band alignment of Al2O3/NO2/H-diamond. Additionally, the band diagram under various gate bias conditions was proposed on the basis of capacitance-voltage measurements and analysis using Poisson’s equations.

  18. Epitaxial Graphene Surface Preparation for Atomic Layer Deposition of Al2O3

    DTIC Science & Technology

    2011-06-01

    j dielectrics such as Al2O3 , HfO2, Ta2O5, and TiO2 , are important for the realization of graphene-based top-gated electronic devices including field... ALD pulse sequencing of NO2-trimethylaluminum (TMA); 16 oxidation of electron beam evaporated metallic Al, Hf, Ti, Ta;17,18 and spin- coating of a... ALD of Al2O3 films in promoting uni- form, high quality oxide deposition. Initial treatments resulted in partial coverage, while the optimized treatment

  19. W:Al2O3 nanocomposite thin films with tunable optical properties prepared by atomic layer deposition

    DOE PAGES

    Babar, Shaista; Mane, Anil U.; Yanguas-Gil, Angel; ...

    2016-06-17

    Here, a systematic alteration in the optical properties of W:Al2O3 nanocomposite films is demonstrated by precisely varying the W cycle percentage (W%) from 0 to 100% in Al2O3 during atomic layer deposition. The direct and indirect band energies of the nanocomposite materials decrease from 5.2 to 4.2 eV and from 3.3 to 1.8 eV, respectively, by increasing the W% from 10 to 40. X-ray absorption spectroscopy reveals that, for W% < 50, W is present in both metallic and suboxide states, whereas, for W% ≥ 50, only metallic W is seen. This transition from dielectric to metallic character at W%more » ~ 50 is accompanied by an increase in the electrical and thermal conductivity and the disappearance of a clear band gap in the absorption spectrum. The density of the films increases monotonically from 3.1 g/cm3 for pure Al2O3 to 17.1 g/cm3 for pure W, whereas the surface roughness is greatest for the W% = 50 films. The W:Al2O3 nanocomposite films are thermally stable and show little change in optical properties upon annealing in air at 500 °C. These W:Al2O3 nanocomposite films show promise as selective solar absorption coatings for concentrated solar power applications.« less

  20. Atomic to Nanoscale Investigation of Functionalities of Al2O3 Coating Layer on Cathode for Enhanced Battery Performance

    SciTech Connect

    Yan, Pengfei; Zheng, Jianming; Zhang, Xiaofeng; Xu, Rui; Amine, Khalil; Xiao, Jie; Zhang, Jiguang; Wang, Chong M.

    2016-01-06

    Surface coating of cathode has been identified as an effective approach for enhancing the capacity retention of layered structure cathode. However, the underlying operating mechanism of such a thin layer of coating, in terms of surface chemical functionality and capacity retention, remains unclear. In this work, we use aberration corrected scanning transmission electron microscopy and high efficient spectroscopy to probe the delicate functioning mechanism of Al2O3 coating layer on Li1.2Ni0.2Mn0.6O2 cathode. We discovered that in terms of surface chemical function, the Al2O3 coating suppresses the side reaction between cathode and the electrolyte upon the battery cycling. At the same time, the Al2O3 coating layer also eliminates the chemical reduction of Mn from the cathode particle surface, therefore avoiding the dissolution of the reduced Mn into the electrolyte. In terms of structural stability, we found that the Al2O3 coating layer can mitigate the layer to spinel phase transformation, which otherwise will initiate from the particle surface and propagate towards the interior of the particle with the progression of the battery cycling. The atomic to nanoscale effects of the coating layer observed here provide insight for optimized design of coating layer on cathode to enhance the battery properties.

  1. Pt-Al2O3 dual layer atomic layer deposition coating in high aspect ratio nanopores.

    PubMed

    Pardon, Gaspard; Gatty, Hithesh K; Stemme, Göran; van der Wijngaart, Wouter; Roxhed, Niclas

    2013-01-11

    Functional nanoporous materials are promising for a number of applications ranging from selective biofiltration to fuel cell electrodes. This work reports the functionalization of nanoporous membranes using atomic layer deposition (ALD). ALD is used to conformally deposit platinum (Pt) and aluminum oxide (Al(2)O(3)) on Pt in nanopores to form a metal-insulator stack inside the nanopore. Deposition of these materials inside nanopores allows the addition of extra functionalities to nanoporous materials such as anodic aluminum oxide (AAO) membranes. Conformal deposition of Pt on such materials enables increased performances for electrochemical sensing applications or fuel cell electrodes. An additional conformal Al(2)O(3) layer on such a Pt film forms a metal-insulator-electrolyte system, enabling field effect control of the nanofluidic properties of the membrane. This opens novel possibilities in electrically controlled biofiltration. In this work, the deposition of these two materials on AAO membranes is investigated theoretically and experimentally. Successful process parameters are proposed for a reliable and cost-effective conformal deposition on high aspect ratio three-dimensional nanostructures. A device consisting of a silicon chip supporting an AAO membrane of 6 mm diameter and 1.3 μm thickness with 80 nm diameter pores is fabricated. The pore diameter is reduced to 40 nm by a conformal deposition of 11 nm Pt and 9 nm Al(2)O(3) using ALD.

  2. Nucleation and growth mechanisms of Al2O3 atomic layer deposition on synthetic polycrystalline MoS2

    NASA Astrophysics Data System (ADS)

    Zhang, H.; Chiappe, D.; Meersschaut, J.; Conard, T.; Franquet, A.; Nuytten, T.; Mannarino, M.; Radu, I.; Vandervorst, W.; Delabie, A.

    2017-02-01

    Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are of great interest for applications in nano-electronic devices. Their incorporation requires the deposition of nm-thin and continuous high-k dielectric layers on the 2D TMDs. Atomic layer deposition (ALD) of high-k dielectric layers is well established on Si surfaces: the importance of a high nucleation density for rapid layer closure is well known and the nucleation mechanisms have been thoroughly investigated. In contrast, the nucleation of ALD on 2D TMD surfaces is less well understood and a quantitative analysis of the deposition process is lacking. Therefore, in this work, we investigate the growth of Al2O3 (using Al(CH3)3/H2O ALD) on MoS2 whereby we attempt to provide a complete insight into the use of several complementary characterization techniques, including X-ray photo-electron spectroscopy, elastic recoil detection analysis, scanning electron microscopy, and time-of-flight secondary ion mass spectrometry. To reveal the inherent reactivity of MoS2, we exclude the impact of surface contamination from a transfer process by direct Al2O3 deposition on synthetic MoS2 layers obtained by a high temperature sulfurization process. It is shown that Al2O3 ALD on the MoS2 surface is strongly inhibited at temperatures between 125°C and 300°C, with no growth occurring on MoS2 crystal basal planes and selective nucleation only at line defects or grain boundaries at MoS2 top surface. During further deposition, the as-formed Al2O3 nano-ribbons grow in both vertical and lateral directions. Eventually, a continuous Al2O3 film is obtained by lateral growth over the MoS2 crystal basal plane, with the point of layer closure determined by the grain size at the MoS2 top surface and the lateral growth rate. The created Al2O3/MoS2 interface consists mainly of van der Waals interactions. The nucleation is improved by contributions of reversible adsorption on the MoS2 basal planes by using low

  3. ATOMIC AND MOLECULAR PHYSICS: Atomic Layer Deposition of Al2O3 on H-Passivated GeSi: Initial Surface Reaction Pathways with H/GeSi(100)-2 × 1

    NASA Astrophysics Data System (ADS)

    Shi, Yu; Sun, Qing-Qing; Dong, Lin; Liu, Han; Ding, Shi-Jin; Zhang, Wei

    2009-05-01

    The reaction mechanisms of Al(CH3)3 (TMA) adsorption on H-passivated GeSi(100)-2 × 1 surface are investigated with density functional theory. The Si-Ge and Ge-Ge one-dimer cluster models are employed to represent the GeSi(100)-2 × 1 surface with different Ge compositions. For a Si-Ge dimer of a H-passivated SiGe surface, TMA adsorption on both Si-H* and Ge-H* sites is considered. The activation barrier of TMA with the Si-H* site (1.2eV) is higher than that of TMA with the Ge-H* site (0.91 eV), which indicates that the reaction proceeds more slowly on the Si-H* site than on the Ge-H* site. In addition, adsorption of TMA is more energetically favorable on the Ge-Ge dimer than on the Si-Ge dimer of H-passivated SiGe.

  4. Improvement of the GaSb/Al2O3 interface using a thin InAs surface layer

    NASA Astrophysics Data System (ADS)

    Greene, Andrew; Madisetti, Shailesh; Nagaiah, Padmaja; Yakimov, Michael; Tokranov, Vadim; Moore, Richard; Oktyabrsky, Serge

    2012-12-01

    The highly reactive GaSb surface was passivated with a thin InAs layer to limit interface trap state density (Dit) at the III-V/high-k oxide interface. This InAs surface was subjected to various cleaning processes to effectively reduce native oxides before atomic layer deposition (ALD). Ammonium sulfide pre-cleaning and trimethylaluminum/water ALD were used in conjunction to provide a clean interface and annealing in forming gas (FG) at 350 °C resulted in an optimized fabrication for n-GaSb/InAs/high-k gate stacks. Interface trap density, Dit ≈ 2-3 × 1012 cm-2eV-1 resided near the n-GaSb conductance band which was extracted and compared with three different methods. Conductance-voltage-frequency plots showed efficient Fermi level movement and a sub-threshold slope of 200 mV/dec. A composite high-k oxide process was also developed using ALD of Al2O3 and HfO2 resulting in a Dit ≈ 6-7 × 1012 cm-2eV-1. Subjecting these samples to a higher (450 °C) processing temperature results in increased oxidation and a thermally unstable interface. p-GaSb displayed very fast minority carrier generation/recombination likely due to a high density of bulk traps in GaSb.

  5. Room-Temperature Atomic Layer Deposition of Al2 O3 : Impact on Efficiency, Stability and Surface Properties in Perovskite Solar Cells.

    PubMed

    Kot, Malgorzata; Das, Chittaranjan; Wang, Zhiping; Henkel, Karsten; Rouissi, Zied; Wojciechowski, Konrad; Snaith, Henry J; Schmeisser, Dieter

    2016-12-20

    In this work, solar cells with a freshly made CH3 NH3 PbI3 perovskite film showed a power conversion efficiency (PCE) of 15.4 % whereas the one with 50 days aged perovskite film only 6.1 %. However, when the aged perovskite was covered with a layer of Al2 O3 deposited by atomic layer deposition (ALD) at room temperature (RT), the PCE value was clearly enhanced. X-ray photoelectron spectroscopy study showed that the ALD precursors are chemically active only at the perovskite surface and passivate it. Moreover, the RT-ALD-Al2 O3 -covered perovskite films showed enhanced ambient air stability.

  6. Protection of Polymer from Atomic-Oxygen Erosion using Al2O3 Atomic Layer Deposition Coatings

    DTIC Science & Technology

    2008-01-01

    coatings other than Al2O3 . Multilayer ALD films of Al2O3 / TiO2 or Al2O3 / ZnO could protect against both O atoms and... Al2O3 growth. The steady-state Al2O3 ALD growth rate after nucleation is ∼1.2 Å per AB cycle [19,26]. The polyimide substrates were coated with Al2O3 ALD ...apparatus is shown in Fig. 1. This apparatus has Fig. 2. Mass change of polyimide substrates coated with varying numbers of Al2O3 ALD AB cycles

  7. Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric

    DOE PAGES

    J. M. Rafi; Lynn, D.; Pellegrini, G.; ...

    2015-12-11

    The radiation hardness and thermal stability of the electrical characteristics of atomic layer deposited Al2O3 layers to be used as passivation films for silicon radiation detectors with slim edges are investigated. To directly measure the interface charge and to evaluate its change with the ionizing dose, metal-oxide-silicon (MOS) capacitors implementing differently processed Al2O3 layers were fabricated on p-type silicon substrates. Qualitatively similar results are obtained for degradation of capacitance–voltage and current–voltage characteristics under gamma and proton irradiations up to equivalent doses of 30 Mrad and 21.07 Mrad, respectively. While similar negative charge densities are initially extracted for all non-irradiated capacitors,more » superior radiation hardness is obtained for MOS structures with alumina layers grown with H2O instead of O3 as oxidant precursor. Competing effects between radiation-induced positive charge trapping and hydrogen release from the H2O-grown Al2O3 layers may explain their higher radiation resistance. Finally, irradiated and non-irradiated MOS capacitors with differently processed Al2O3 layers have been subjected to thermal treatments in air at temperatures ranging between 100 °C and 200 °C and the thermal stability of their electrical characteristics has been evaluated. Partial recovery of the gamma-induced degradation has been noticed for O3-grown MOS structures. Lastly, this can be explained by a trapped holes emission process, for which an activation energy of 1.38 ± 0.15 eV has been extracted.« less

  8. Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric

    NASA Astrophysics Data System (ADS)

    Rafí, J. M.; Pellegrini, G.; Fadeyev, V.; Galloway, Z.; Sadrozinski, H. F.-W.; Christophersen, M.; Phlips, B. F.; Lynn, D.; Kierstead, J.; Hoeferkamp, M.; Gorelov, I.; Palni, P.; Wang, R.; Seidel, S.

    2016-02-01

    The radiation hardness and thermal stability of the electrical characteristics of atomic layer deposited Al2O3 layers to be used as passivation films for silicon radiation detectors with slim edges are investigated. To directly measure the interface charge and to evaluate its change with the ionizing dose, metal-oxide-silicon (MOS) capacitors implementing differently processed Al2O3 layers were fabricated on p-type silicon substrates. Qualitatively similar results are obtained for degradation of capacitance-voltage and current-voltage characteristics under gamma and proton irradiations up to equivalent doses of 30 Mrad and 21.07 Mrad, respectively. While similar negative charge densities are initially extracted for all non-irradiated capacitors, superior radiation hardness is obtained for MOS structures with alumina layers grown with H2O instead of O3 as oxidant precursor. Competing effects between radiation-induced positive charge trapping and hydrogen release from the H2O-grown Al2O3 layers may explain their higher radiation resistance. Finally, irradiated and non-irradiated MOS capacitors with differently processed Al2O3 layers have been subjected to thermal treatments in air at temperatures ranging between 100 °C and 200 °C and the thermal stability of their electrical characteristics has been evaluated. Partial recovery of the gamma-induced degradation has been noticed for O3-grown MOS structures. This can be explained by a trapped holes emission process, for which an activation energy of 1.38 ± 0.15 eV has been extracted.

  9. Reduced defect density at the CZTSSe/CdS interface by atomic layer deposition of Al2O3

    NASA Astrophysics Data System (ADS)

    Erkan, Mehmet Eray; Chawla, Vardaan; Scarpulla, Michael A.

    2016-05-01

    The greatest challenge for improving the power conversion efficiency of Cu2ZnSn(S,Se)4 (CZTSSe)/CdS/ZnO thin film solar cells is increasing the open circuit voltage (VOC). Probable leading causes of the VOC deficit in state-of-the-art CZTSSe devices have been identified as bulk recombination, band tails, and the intertwined effects of CZTSSe/CdS band offset, interface defects, and interface recombination. In this work, we demonstrate the modification of the CZTSSe absorber/CdS buffer interface following the deposition of 1 nm-thick Al2O3 layers by atomic layer deposition (ALD) near room temperature. Capacitance-voltage profiling and quantum efficiency measurements reveal that ALD-Al2O3 interface modification reduces the density of acceptor-like states at the heterojunction resulting in reduced interface recombination and wider depletion width. Indications of increased VOC resulting from the modification of the heterojunction interface as a result of ALD-Al2O3 treatment are presented. These results, while not conclusive for application to state-of-the-art high efficiency CZTSSe devices, suggest the need for further studies as it is probable that interface recombination contributes to reduced VOC even in such devices.

  10. Effective passivation of defects in Ge-rich SiGe-on-insulator substrates by Al 2O 3 deposition and subsequent post-annealing

    NASA Astrophysics Data System (ADS)

    Yang, Haigui; Iyota, Masatoshi; Ikeura, Shogo; Wang, Dong; Nakashima, Hiroshi

    2011-06-01

    A method of Al 2O 3 deposition and subsequent post-deposition annealing (Al 2O 3-PDA) was proposed to passivate electrically active defects in Ge-rich SiGe-on-insulator (SGOI) substrates, which were fabricated using Ge condensation by dry oxidation. The effect of Al 2O 3-PDA on defect passivation was clarified by surface analysis and electrical evaluation. It was found that Al 2O 3-PDA could not only suppress the surface reaction during Al-PDA in our previous work [Yang H, Wang D, Nakashima H, Hirayama K, Kojima S, Ikeura S. Defect control by Al-deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions. Thin Solid Films 2010; 518: 2342-5.], but could also effectively passivate p-type defects generated during Ge condensation. The concentration in the range of 10 16-10 18 cm -3 for defect-induced acceptors and holes in Ge-rich SGOI drastically decreased after Al 2O 3-PDA. As a result of defect passivation, the electrical characteristics of both back-gate p-channel and n-channel metal-oxide-semiconductor field-effect transistors fabricated on Ge-rich SGOI were greatly improved after Al 2O 3-PDA.

  11. CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Excellent Passivation of p-Type Si Surface by Sol-Gel Al2O3 Films

    NASA Astrophysics Data System (ADS)

    Xiao, Hai-Qing; Zhou, Chun-Lan; Cao, Xiao-Ning; Wang, Wen-Jing; Zhao, Lei; Li, Hai-Ling; Diao, Hong-Wei

    2009-08-01

    Al2O3 films with a thickness of about 100 nm synthesized by spin coating and thermally treated are applied for field-induced surface passivation of p-type crystalline silicon. The level of surface passivation is determined by techniques based on photoconductance. An effective surface recombination velocity below 100 cm/s is obtained on 10Ω ·cm p-type c-Si wafers (Cz Si). A high density of negative fixed charges in the order of 1012 cm-2 is detected in the Al2O3 films and its impact on the level of surface passivation is demonstrated experimentally. Furthermore, a comparison between the surface passivation achieved for thermal SiO2 and plasma enhanced chemical vapor deposition SiNx:H films on the same c-Si is presented. The high negative fixed charge density explains the excellent passivation of p-type c-Si by Al2O3.

  12. Investigation of an 18 Å Al 2O 3 layer in a magnetic multilayer system by Rutherford and resonant scattering

    NASA Astrophysics Data System (ADS)

    Kling, A.; da Silva, M. F.; Soares, J. C.; Freitas, P. P.; Baptista, D. L.; Zawislak, F. C.

    2000-03-01

    Spin tunnel junctions, consisting of a metallic multilayer with a thin insulating buffer layer, in most cases Al 2O 3, show a large tunneling magnetoresistance (TMR) and are therefore of high interest for future magnetic read heads and non-volatile memories. The properties of these junctions are strongly influenced by the quality of the insulating buffer layer and its behavior during thermal treatment. Measurements with conventional RBS using devices in the as-deposited state and after different heat treatments at temperatures up to 200°C revealed changes in the stoichiometry and O distribution in the buffer layer that can be correlated with changes in the respective magnetic properties. The application of the 16O( 4He, 4He) 16O resonant scattering resonance with incident energies ranging from 3.01 to 3.35 MeV enabled the separate profiling of O in all parts of the sample: the partly oxidized sample surface, the aluminum oxide layer and the silicon dioxide layer covering the Si substrate. Simulations of the energy dependence of the O scattering yield showed that the oxygen is fully retained in the aluminum oxide buffer layer and no diffusion into adjacent metallic layers has occurred. The results indicate also that even Al 2O 3 layers with significantly lower thicknesses can be profiled with this method.

  13. Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Ma, Zhongyuan; Wang, Wen; Yang, Huafeng; Jiang, Xiaofan; Yu, Jie; Qin, Hua; Xu, Ling; Chen, Kunji; Huang, Xinfan; Li, Wei; Xu, Jun; Feng, Duan

    2016-02-01

    The down-scaling of nanocrystal Si (nc-Si) floating gate memory must overcome the challenge of leakage current induced by the conventional ultra-thin tunnel layer. We demonstrate that an improved memory performance based on the Al/SiNx/nc-Si/Al2O3/Si structure can be achieved by adopting the Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition. A larger memory window of 7.9 V and better retention characteristics of 4.7 V after 105 s can be obtained compared with the devices containing a conventional SiO2 tunnel layer of equivalent thickness. The capacitance-voltage characteristic reveals that the Al2O3 tunnel layer has a smaller electron barrier height, which ensures that more electrons are injected into the nc-Si dots through the Al2O3/Si interface. The analysis of the conductance-voltage and high-resolution cross-section transmission microscopy reveals that the smaller nc-Si dots dominate in the charge injection in the nc-Si floating gate MOS device with an Al2O3 tunnel layer. With an increase of the nc-Si size, both nc-Si and the interface contribute to the charge storage capacity and retention. The introduction of the Al2O3 tunnel layer in nc-Si floating gate memory provides a method to achieve an improved performance of nc-Si floating gate memory.

  14. Competition between Al2O3 atomic layer etching and AlF3 atomic layer deposition using sequential exposures of trimethylaluminum and hydrogen fluoride.

    PubMed

    DuMont, Jaime W; George, Steven M

    2017-02-07

    The thermal atomic layer etching (ALE) of Al2O3 can be performed using sequential and self-limiting reactions with trimethylaluminum (TMA) and hydrogen fluoride (HF) as the reactants. The atomic layer deposition (ALD) of AlF3 can also be accomplished using the same reactants. This paper examined the competition between Al2O3 ALE and AlF3 ALD using in situ Fourier transform infrared (FTIR) vibrational spectroscopy measurements on Al2O3 ALD-coated SiO2 nanoparticles. The FTIR spectra could observe an absorbance loss of the Al-O stretching vibrations during Al2O3 ALE or an absorbance gain of the Al-F stretching vibrations during AlF3 ALD. The transition from AlF3 ALD to Al2O3 ALE occurred versus reaction temperature and was also influenced by the N2 or He background gas pressure. Higher temperatures and lower background gas pressures led to Al2O3 ALE. Lower temperatures and higher background gas pressures led to AlF3 ALD. The FTIR measurements also monitored AlCH3* and HF(*) species on the surface after the TMA and HF reactant exposures. The loss of AlCH3* and HF(*) species at higher temperatures is believed to play a vital role in the transition between AlF3 ALD at lower temperatures and Al2O3 ALE at higher temperatures. The change between AlF3 ALD and Al2O3 ALE was defined by the transition temperature. Higher transition temperatures were observed using larger N2 or He background gas pressures. This correlation was associated with variations in the N2 or He gas thermal conductivity versus pressure. The fluorination reaction during Al2O3 ALE is very exothermic and leads to temperature rises in the SiO2 nanoparticles. These temperature transients influence the Al2O3 etching. The higher N2 and He gas thermal conductivities are able to cool the SiO2 nanoparticles more efficiently and minimize the size of the temperature rises. The competition between Al2O3 ALE and AlF3 ALD using TMA and HF illustrates the interplay between etching and growth and the importance of

  15. Alternative Dielectric Films for rf MEMS Capacitive Switches Deposited using Atomic Layer Deposited Al2O3/ZnO Alloys

    DTIC Science & Technology

    2006-07-02

    switches deposited using atomic layer deposited Al2O3/ZnO alloys Cari F. Herrmann a,b, Frank W. DelRio a, David C. Miller a, Steven M. George b,c, Victor...The layer is an alloy mixture of Al2O3 and ZnO and is proposed for use as charge dissipative layers in which the dielectric onstant is significant...investigates Al2O3/ZnO ALD alloys deposited at 100 and 177 ◦C and compares their material properties. Auger electron pectroscopy was used to determine the

  16. Thermal conductivity of amorphous Al2O3/TiO2 nanolaminates deposited by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Ali, Saima; Juntunen, Taneli; Sintonen, Sakari; Ylivaara, Oili M. E.; Puurunen, Riikka L.; Lipsanen, Harri; Tittonen, Ilkka; Hannula, Simo-Pekka

    2016-11-01

    The thermophysical properties of Al2O3/TiO2 nanolaminates deposited by atomic layer deposition (ALD) are studied as a function of bilayer thickness and relative TiO2 content (0%-100%) while the total nominal thickness of the nanolaminates was kept at 100 nm. Cross-plane thermal conductivity of the nanolaminates is measured at room temperature using the nanosecond transient thermoreflectance method. Based on the measurements, the nanolaminates have reduced thermal conductivity as compared to the pure amorphous thin films, suggesting that interfaces have a non-negligible effect on thermal transport in amorphous nanolaminates. For a fixed number of interfaces, we find that approximately equal material content of Al2O3 and TiO2 produces the lowest value of thermal conductivity. The thermal conductivity reduces with increasing interface density up to 0.4 nm-1, above which the thermal conductivity is found to be constant. The value of thermal interface resistance approximated by the use of diffuse mismatch model was found to be 0.45 m2 K GW-1, and a comparative study employing this value supports the interpretation of non-negligible interface resistance affecting the overall thermal conductivity also in the amorphous limit. Finally, no clear trend in thermal conductivity values was found for nanolaminates grown at different deposition temperatures, suggesting that the temperature in the ALD process has a non-trivial while modest effect on the overall thermal conductivity in amorphous nanolaminates.

  17. Thermal conductivity of amorphous Al2O3/TiO2 nanolaminates deposited by atomic layer deposition.

    PubMed

    Ali, Saima; Juntunen, Taneli; Sintonen, Sakari; Ylivaara, Oili M E; Puurunen, Riikka L; Lipsanen, Harri; Tittonen, Ilkka; Hannula, Simo-Pekka

    2016-11-04

    The thermophysical properties of Al2O3/TiO2 nanolaminates deposited by atomic layer deposition (ALD) are studied as a function of bilayer thickness and relative TiO2 content (0%-100%) while the total nominal thickness of the nanolaminates was kept at 100 nm. Cross-plane thermal conductivity of the nanolaminates is measured at room temperature using the nanosecond transient thermoreflectance method. Based on the measurements, the nanolaminates have reduced thermal conductivity as compared to the pure amorphous thin films, suggesting that interfaces have a non-negligible effect on thermal transport in amorphous nanolaminates. For a fixed number of interfaces, we find that approximately equal material content of Al2O3 and TiO2 produces the lowest value of thermal conductivity. The thermal conductivity reduces with increasing interface density up to 0.4 nm(-1), above which the thermal conductivity is found to be constant. The value of thermal interface resistance approximated by the use of diffuse mismatch model was found to be 0.45 m(2) K GW(-1), and a comparative study employing this value supports the interpretation of non-negligible interface resistance affecting the overall thermal conductivity also in the amorphous limit. Finally, no clear trend in thermal conductivity values was found for nanolaminates grown at different deposition temperatures, suggesting that the temperature in the ALD process has a non-trivial while modest effect on the overall thermal conductivity in amorphous nanolaminates.

  18. Laser damage properties of TiO2/Al2O3 thin films grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Wei, Yaowei; Liu, Hao; Sheng, Ouyang; Liu, Zhichao; Chen, Songlin; Yang, Liming

    2011-08-01

    Research on thin film deposited by atomic layer deposition (ALD) for laser damage resistance is rare. In this paper, it has been used to deposit TiO2/Al2O3 films at 110° C and 280° C on fused silica and BK7 substrates. Microstructure of the thin films was investigated by x-ray diffraction. The laser-induced damage threshold (LIDT) of samples was measured by a damage test system. Damage morphology was studied under a Nomarski differential interference contrast microscope and further checked under an atomic force microscope. Multilayers deposited at different temperatures were compared. The results show that the films deposited by ALD had better uniformity and transmission; in this paper, the uniformity is better than 99% over 100mm Φ samples, and the transmission is more than 99.8% at 1064nm. Deposition temperature affects the deposition rate and the thin film microstructure and further influences the LIDT of the thin films. As to the TiO2/Al2O3 films, the LIDTs were 6.73±0.47J/cm2 and 6.5±0.46J/cm2 at 110° C on fused silica and BK7 substrates, respectively. The LIDTs at 110° C are notably better than 280° C.

  19. Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition.

    PubMed

    Edy, Riyanto; Huang, Xiaojiang; Guo, Ying; Zhang, Jing; Shi, Jianjun

    2013-02-15

    In this paper, polyethyleneterephthalate (PET) films with and without plasma pretreatment were modified by atomic layer deposition (ALD) and plasma-assisted atomic layer deposition (PA-ALD). It demonstrates that the Al2O3 films are successfully deposited onto the surface of PET films. The cracks formed on the deposited Al2O3 films in the ALD, plasma pretreated ALD, and PA-ALD were attributed to the energetic ion bombardment in plasmas. The surface wettability in terms of water contact angle shows that the deposited Al2O3 layer can enhance the wetting property of modified PET surface. Further characterizations of the Al2O3 films suggest that the elevated density of hydroxyl -OH group improve the initial growth of ALD deposition. Chemical composition of the Al2O3-coated PET film was characterized by X-ray photoelectron spectroscopy, which shows that the content of C 1s reduces with the growing of O 1s in the Al2O3-coated PET films, and the introduction of plasma in the ALD process helps the normal growth of Al2O3 on PET in PA-ALD.

  20. Atomic Layer Deposition Al2O3 Coatings Significantly Improve Thermal, Chemical, and Mechanical Stability of Anodic TiO2 Nanotube Layers

    PubMed Central

    2017-01-01

    We report on a very significant enhancement of the thermal, chemical, and mechanical stability of self-organized TiO2 nanotubes layers, provided by thin Al2O3 coatings of different thicknesses prepared by atomic layer deposition (ALD). TiO2 nanotube layers coated with Al2O3 coatings exhibit significantly improved thermal stability as illustrated by the preservation of the nanotubular structure upon annealing treatment at high temperatures (870 °C). In addition, a high anatase content is preserved in the nanotube layers against expectation of the total rutile conversion at such a high temperature. Hardness of the resulting nanotube layers is investigated by nanoindentation measurements and shows strongly improved values compared to uncoated counterparts. Finally, it is demonstrated that Al2O3 coatings guarantee unprecedented chemical stability of TiO2 nanotube layers in harsh environments of concentrated H3PO4 solutions. PMID:28291942

  1. Atomic Layer Deposition Al2O3 Coatings Significantly Improve Thermal, Chemical, and Mechanical Stability of Anodic TiO2 Nanotube Layers.

    PubMed

    Zazpe, Raul; Prikryl, Jan; Gärtnerova, Viera; Nechvilova, Katerina; Benes, Ludvik; Strizik, Lukas; Jäger, Ales; Bosund, Markus; Sopha, Hanna; Macak, Jan M

    2017-04-04

    We report on a very significant enhancement of the thermal, chemical, and mechanical stability of self-organized TiO2 nanotubes layers, provided by thin Al2O3 coatings of different thicknesses prepared by atomic layer deposition (ALD). TiO2 nanotube layers coated with Al2O3 coatings exhibit significantly improved thermal stability as illustrated by the preservation of the nanotubular structure upon annealing treatment at high temperatures (870 °C). In addition, a high anatase content is preserved in the nanotube layers against expectation of the total rutile conversion at such a high temperature. Hardness of the resulting nanotube layers is investigated by nanoindentation measurements and shows strongly improved values compared to uncoated counterparts. Finally, it is demonstrated that Al2O3 coatings guarantee unprecedented chemical stability of TiO2 nanotube layers in harsh environments of concentrated H3PO4 solutions.

  2. Preparation of ZnO/Al2O3 catalysts by using atomic layer deposition for plasma-assisted non-oxidative methane coupling

    NASA Astrophysics Data System (ADS)

    Jeong, Myung-Geun; Kim, Young Dok; Park, Sunyoung; Kasinathan, Palraj; Hwang, Young Kyu; Chang, Jong-San; Park, Yong-Ki

    2016-05-01

    We prepared a ZnO/mesoporous Al2O3-shell/core structure by using atomic layer deposition (ALD) of ZnO on commercially-available mesoporous Al2O3. We used various analysis techniques such as scanning and transmission electron microscopy, X-ray photoelectron spectroscopy, inductively coupled plasma-atomic emission spectroscopy, and surface area and pore size analyses based on nitrogen isotherm data. A 200 nm-thick slab of mesoporous Al2O3 particles was decorated by ZnO upon ALD deposition, whereas the inner part of the Al2O3 particle was free of ZnO. We evaluated the catalytic activity of the bare and the ZnO-covered Al2O3 for plasma-assisted nonoxidative coupling of methane. The catalytic behavior was shown to be sensitive to the amount of ZnO deposited. Particularly, 40-cycled ZnO/Al2O3 showed an enhanced selectivity to the olefin product with almost the same CH4 conversion as that of bare Al2O3. Preparation of the shell/core structure by using ALD can be an interesting strategy for finding highly-efficient catalysts in a plasma-assisted catalytic reaction.

  3. Diffusion-reaction of aluminum and oxygen in thermally grown Al2O3 oxide layers

    NASA Astrophysics Data System (ADS)

    Osorio, Julián D.; Giraldo, Juliana; Hernández, Juan C.; Toro, Alejandro; Hernández-Ortiz, Juan P.

    2014-04-01

    The diffusion-reaction of aluminum (Al) and oxygen (O), to form thermally grown oxide (TGO) layers in thermal barrier coatings (TBCs), is studied through an analytical model. A nonsymmetrical radial basis function approach is used to numerically solve the mass balance equations that predict the TGO growth. Correct boundary conditions for the Al and O reactions are laid out using scaling arguments. The Damköhler number shows that the O-Al reaction is several orders of magnitude faster than diffusion. In addition, a comparison between aluminum and oxygen diffusivities indicates that TGO growth is governed by aluminum diffusion. The results are compared with experimental measurements on air plasma spray-deposited TBCs treated at 1,373 K with exposure times ranging from 1 to 1700 hours. We found that, for several time decades, the thickness of the thermally grown layer has power law dependence of time with an exponent of ½, following the diffusion control mechanism. At later times, however, the presence of other oxides and additional kinetics modify the diffusive exponent.

  4. Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches

    NASA Astrophysics Data System (ADS)

    Pawlik, Matthieu; Vilcot, Jean-Pierre; Halbwax, Mathieu; Gauthier, Michel; Le Quang, Nam

    2015-08-01

    The development of an efficient surface passivation is a key feature of silicon solar cells towards the improvement of €/W ratio. An Al2O3 layer coated by plasma-enhanced atomic layer deposition has proven its efficiency to increase the minority carrier lifetime on p-type silicon. However, the firing step, which is a common part of the manufacturing process that includes metallic pastes for screen-printed contacts, ruins this passivation effect. On the basis of photoelectric, electric, and chemical experimental studies, a correlation is provided in this paper between the different microscopic and macroscopic behaviors that govern the passivation process. To show this correlation, photoconductance decay measurements have been carried out to determine minority carrier lifetime. Following which, the capacitance-voltage measurement results are used to extract electrical parameters, namely, the densities of interface defects and effective charges. In addition, complementing secondary ion mass spectrometry (SIMS) experiments revealed the different chemical species that can be relevant for the explanation of passivation quality and macroscopic electrical measurements.

  5. Effects of annealing conditions on the dielectric properties of solution-processed Al2O3 layers for indium-zinc-tin-oxide thin-film transistors.

    PubMed

    Kim, Yong-Hoon; Kim, Kwang-Ho; Park, Sung Kyu

    2013-11-01

    In this paper, the effects of annealing conditions on the dielectric properties of solution-processed aluminum oxide (Al2O3) layers for indium-zinc-tin-oxide (IZTO) thin-film transistors (TFTs) have been investigated. The dielectric properties of Al2O3 layers such as leakage current density and dielectric strength were largely affected by their annealing conditions. In particular, oxygen partial pressure in rapid thermal annealing, and the temperature profile of hot plate annealing had profound effects on the dielectric properties. From a refractive index analysis, the enhanced dielectric properties of Al2O3 gate dielectrics can be attributed to higher film density depending on the annealing conditions. With the low-temperature-annealed Al2O3 gate dielectric at 350 degrees C, solution-processed IZTO TFTs with a field-effect mobility of approximately 2.2 cm2/Vs were successfully fabricated.

  6. Interface Properties of Atomic-Layer-Deposited Al2O3 Thin Films on Ultraviolet/Ozone-Treated Multilayer MoS2 Crystals.

    PubMed

    Park, Seonyoung; Kim, Seong Yeoul; Choi, Yura; Kim, Myungjun; Shin, Hyunjung; Kim, Jiyoung; Choi, Woong

    2016-05-11

    We report the interface properties of atomic-layer-deposited Al2O3 thin films on ultraviolet/ozone (UV/O3)-treated multilayer MoS2 crystals. The formation of S-O bonds on MoS2 after low-power UV/O3 treatment increased the surface energy, allowing the subsequent deposition of uniform Al2O3 thin films. The capacitance-voltage measurement of Au-Al2O3-MoS2 metal oxide semiconductor capacitors indicated n-type MoS2 with an electron density of ∼10(17) cm(-3) and a minimum interface trap density of ∼10(11) cm(-2) eV(-1). These results demonstrate the possibility of forming a high-quality Al2O3-MoS2 interface by proper UV/O3 treatment, providing important implications for their integration into field-effect transistors.

  7. Proactive control of the metal-ceramic interface behavior of thermal barrier coatings using an artificial alpha-Al2O 3 layer

    NASA Astrophysics Data System (ADS)

    Su, Yi-Feng

    The reliability and life of thermal barrier coatings (TBCs) used in the hottest sections of advanced aircraft engines and power generation systems are largely dictated by: (1) the ability of a metallic bond coating to form an adherent thermally grown oxide (TGO) at the metal-ceramic interface and (2) the rate at which the TGO grows upon oxidation. It is postulated that a thin alpha-Al2O3 layer, if it could be directly deposited on a Ni-based alloy, will guide the alloy surface to form a TGO that is more tenacious and slower growing than what is attainable with state-of-the-art bond coatings. A chemical vapor deposition (CVD) process was used to directly deposit an alpha-Al2O3 layer on the surface of a single crystal Ni-bases superalloy. The layer was 150 nm thick, and consisted of small columnar grains (˜100 to 200 nm) with alpha-Al2O 3 as the major phase with a minute amount of theta-Al2O 3. Within 0.5 h of oxidation at 1150°C, the resulting TGO formed on the alloy surface underwent significant lateral grain growth. Consequently, within this time scale, the columnar nature of the TGO became well established. After 50 h, a network of ridges was clearly observed on the TGO surface instead of equiaxed grains typically observed on uncoated alloy surface. Comparison of the TGO morphologies observed with and without the CVD-Al2O 3 layer suggested that the transient oxidation of the alloy surface was considerably reduced. The alloy coated with the CVD-Al2O 3 layer also produced a much more adherent and slow growing TGO in comparison to that formed on the uncoated alloy surface. The CVD-Al2O 3 layer also improved its spallation resistance. Without the CVD-Al 2O3 layer, more than 50% of the TGO spalled off the alloy surface after 500 h in oxidation with significant wrinkling of the TGO that remained on the alloy surface. In contrast, the TGO remained intact with the CVD-Al2O3 layer after the 500 h exposure. Furthermore, the CVD layer significantly reduced the degree of

  8. Interface Electrical Properties of Al2O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer.

    PubMed

    Fisichella, Gabriele; Schilirò, Emanuela; Di Franco, Salvatore; Fiorenza, Patrick; Lo Nigro, Raffaella; Roccaforte, Fabrizio; Ravesi, Sebastiano; Giannazzo, Filippo

    2017-03-01

    High-quality thin insulating films on graphene (Gr) are essential for field-effect transistors (FETs) and other electronics applications of this material. Atomic layer deposition (ALD) is the method of choice to deposit high-κ dielectrics with excellent thickness uniformity and conformal coverage. However, to start the growth on the sp(2) Gr surface, a chemical prefunctionalization or the physical deposition of a seed layer are required, which can effect, to some extent, the electrical properties of Gr. In this paper, we report a detailed morphological, structural, and electrical investigation of Al2O3 thin films grown by a two-steps ALD process on a large area Gr membrane residing on an Al2O3-Si substrate. This process consists of the H2O-activated deposition of a Al2O3 seed layer a few nanometers in thickness, performed in situ at 100 °C, followed by ALD thermal growth of Al2O3 at 250 °C. The optimization of the low-temperature seed layer allowed us to obtain a uniform, conformal, and pinhole-free Al2O3 film on Gr by the second ALD step. Nanoscale-resolution mapping of the current through the dielectric by conductive atomic force microscopy (CAFM) demonstrated an excellent laterally uniformity of the film. Raman spectroscopy measurements indicated that the ALD process does not introduce defects in Gr, whereas it produces a partial compensation of Gr unintentional p-type doping, as confirmed by the increase of Gr sheet resistance (from ∼300 Ω/sq in pristine Gr to ∼1100 Ω/sq after Al2O3 deposition). Analysis of the transfer characteristics of Gr field-effect transistors (GFETs) allowed us to evaluate the relative dielectric permittivity (ε = 7.45) and the breakdown electric field (EBD = 7.4 MV/cm) of the Al2O3 film as well as the transconductance and the holes field-effect mobility (∼1200 cm(2) V(-1) s(-1)). A special focus has been given to the electrical characterization of the Al2O3-Gr interface by the analysis of high frequency capacitance

  9. Formation and stability of crystalline and amorphous Al2O3 layers deposited on Ga2O3 nanowires by atomic layer epitaxy

    NASA Astrophysics Data System (ADS)

    Katz, M. B.; Twigg, M. E.; Prokes, S. M.

    2016-09-01

    Although the crystalline α and γ phases are the most stable forms of alumina, small-diameter (<6 nm) nanoparticles are known to be completely amorphous, due to the surface energy being correspondingly lower for the less stable non-crystalline phase. Al2O3 films with a thickness of 5 nm grown by low temperature (200 °C) atomic layer deposition (ALD) on small-diameter (<20 nm) Ga2O3 nanowires (NWs), however, are identified by transmission electron microscopy as belonging to the α, γ, and possibly θ crystalline phases of Al2O3, while films deposited on larger diameter (>20 nm) NWs are found to be amorphous. Indeed, until recently, all Al2O3, films deposited by low-temperature ALD using trimethylaluminum and water have been reported to be amorphous, regardless of film thickness or substrate. The formation of a crystalline ALD film can be understood in terms of the energetics of misfit dislocations that maintain the registry between the ALD film and the NW substrate, as well as the influence of strain and surface energy. The decreasing energy of co-axial misfit dislocations with NW diameter results in a corresponding decrease in the contribution of the Al2O3/Ga2O3 interface to the free energy, while the interfacial energy for an amorphous film is independent of the NW diameter. Therefore, for NW cores of sufficiently small diameter, the free energy contribution of the Al2O3/Ga2O3 interface is smaller for crystalline films than for amorphous films, thereby favoring the formation of crystalline films for small-diameter NWs. For ALD Al2O3 films of 10 nm thickness deposited on small-diameter Ga2O3 NWs, however, only the first 5 nm of the ALD film is found to be crystalline, possibly due to well-established kinetic limitations to low temperature epitaxial growth.

  10. Eliminated Phototoxicity of TiO2 Particles by an Atomic-Layer-Deposited Al2 O3 Coating Layer for UV-Protection Applications.

    PubMed

    Jang, Eunyong; Sridharan, Kishore; Park, Young Min; Park, Tae Joo

    2016-08-16

    We demonstrate the conformal coating of an ultrathin Al2 O3 layer on TiO2 nanoparticles through atomic layer deposition by using a specifically designed rotary reactor to eliminate the phototoxicity of the particles for cosmetic use. The ALD reactor is modified to improve the coating efficiency as well as the agitation of the particles for conformal coating. Elemental and microstructural analyses show that ultrathin Al2 O3 layers are conformally deposited on the TiO2 nanoparticles with a controlled thickness. Rhodamine B dye molecules on Al2 O3 -coated TiO2 exhibited a long life time under UV irradiation, that is, more than 2 h, compared to that on bare TiO2 , that is, 8 min, indicating mitigation of photocatalytic activity by the coated layer. The effect of carbon impurities in the film resulting from various deposition temperatures and thicknesses of the Al2 O3 layer on the photocatalytic activity are also thoroughly investigated with controlled experimental condition by using dye molecules on the surface. Our results reveal that an increased carbon impurity resulting from a low processing temperature provides a charge conduction path and generates reactive oxygen species causing the degradation of dye molecule. A thin coated layer, that is, less than 3 nm, also induced the tunneling of electrons and holes to the surface, hence oxidizing dye molecules. Furthermore, the introduction of an Al2 O3 layer on TiO2 improves the light trapping thus, enhances the UV absorption.

  11. Imaging of oxide charges and contact potential difference fluctuations in atomic layer deposited Al2O3 on Si

    NASA Astrophysics Data System (ADS)

    Sturm, J. M.; Zinine, A. I.; Wormeester, H.; Poelsema, Bene; Bankras, R. G.; Holleman, J.; Schmitz, J.

    2005-03-01

    Ultrathin 2.5nm high-k aluminum oxide (Al2O3) films on p-type silicon (001) deposited by atomic layer deposition (ALD) were investigated with noncontact atomic force microscopy (NC-AFM) in ultrahigh vacuum, using a conductive tip. Constant force gradient images revealed the presence of oxide charges and experimental observations at different tip-sample potentials were compared with calculations of the electric force gradient based on a spherical tip model. This model could be substantially improved by the incorporation of the image of the tip in the semiconductor substrate. Based on the signals of different oxide charges observed, a homogenous depth distribution of those charges was derived. Application of a potential difference between sample and tip was found to result in a net electric force depending on the contact potential difference (CPD) and effective tip-sample capacitance, which depends on the depletion or accumulation layer that is induced by the bias voltage. CPD images could be constructed from height-voltage spectra with active feedback. Apart from oxide charges large-scale (150-300nm lateral size) and small-scale (50-100nm) CPD fluctuations were observed, the latter showing a high degree of correlation with topography features. This correlation might be a result from the surface-inhibited growth mode of the investigated layers.

  12. Design of Al2O3/SiO2 laminated stacks with multiple interface dipole layers to achieve large flatband voltage shifts of MOS capacitors

    NASA Astrophysics Data System (ADS)

    Kamata, Hironobu; Kita, Koji

    2017-03-01

    We studied the dipole induced flatband voltage (VFB) shifts of Si MOS capacitors with Al2O3/SiO2/Al2O3/SiO2/Si laminated stacks ((Al2O3/SiO2)n/Si, n = 2) designed for a large positive shift of VFB. The VFB shift caused by each dipole layer was determined from capacitance-voltage characteristics by excluding the effect of fixed charges. Due to the additivity of multiple dipole layers in the laminated stack, a large VFB shift (>1 V) was observed. In our experimental condition, the dipole layers at Al2O3-on-SiO2 interfaces were selectively formed, while those at SiO2-on-Al2O3 interfaces were effectively suppressed. The validity of such additivity of VFB shifts induced by selectively formed dipole layers was also experimentally demonstrated for n ≥ 3 laminated stacks. An introduction of multiple dipole layers is applicable for a threshold voltage tuning in a wider range than the tuning with a single dipole layer.

  13. Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack

    NASA Astrophysics Data System (ADS)

    Qian, Shi-Bing; Zhang, Wen-Peng; Liu, Wen-Jun; Ding, Shi-Jin

    2015-12-01

    Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) memory is very promising for transparent and flexible system-on-panel displays; however, electrical erasability has always been a severe challenge for this memory. In this article, we demonstrated successfully an electrically programmable-erasable memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack under a maximal processing temperature of 300 oC. As the programming voltage was enhanced from 14 to 19 V for a constant pulse of 0.2 ms, the threshold voltage shift increased significantly from 0.89 to 4.67 V. When the programmed device was subjected to an appropriate pulse under negative gate bias, it could return to the original state with a superior erasing efficiency. The above phenomena could be attributed to Fowler-Nordheim tunnelling of electrons from the IGZO channel to the Pt nanocrystals during programming, and inverse tunnelling of the trapped electrons during erasing. In terms of 0.2-ms programming at 16 V and 350-ms erasing at -17 V, a large memory window of 3.03 V was achieved successfully. Furthermore, the memory exhibited stable repeated programming/erasing (P/E) characteristics and good data retention, i.e., for 2-ms programming at 14 V and 250-ms erasing at -14 V, a memory window of 2.08 V was still maintained after 103 P/E cycles, and a memory window of 1.1 V was retained after 105 s retention time.

  14. Temperature-induced changes in optical properties of thin film TiO2-Al2O3 bi-layer structures grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Ali, Rizwan; Saleem, Muhammad Rizwan; Honkanen, Seppo

    2016-02-01

    We investigate the optical properties and corresponding temperature-induced changes in highly uniform thin amorphous films and their bi-layer stacks grown by Atomic Layer Deposition (ALD). The environmentally driven conditions such as temperature, humidity and pressure have a significant influence on optical properties of homogeneous and heterogeneous bi-layer stacked structures of TiO2-Al2O3 and subsequently affect the specific sensitive nature of optical signals from nano-optical devices. Owing to the super hydrophilic behavior and inhibited surface defects in the form of hydrogenated species, the thermo-optic coefficient (TOC) of ~ 100 nm thick ALD-TiO2 films vary significantly with temperature, which can be used for sensing applications. On the other hand, the TOC of ~ 100 nm thick ALD-Al2O3 amorphous films show a differing behavior with temperature. In this work, we report on reduction of surface defects in ALD-TiO2 films by depositing a number of ultra-thin ALD-Al2O3 films to act as impermeable barrier layers. The designed and fabricated heterostructures of ALD-TiO2/Al2O3 films with varying ALD-Al2O3 thicknesses are exploited to stabilize the central resonance peak of Resonant Waveguide Gratings (RWGs) in thermal environments. The temperature-dependent optical constants of ALD-TiO2/Al2O3 bi-layer films are measured by a variable angle spectroscopic ellipsometer (VASE), covering a wide spectral range 380 <= λ <= 1800 nm at a temperature range from 25 to 105 °C. The Cauchy model is used to design and retrieve refractive indices at these temperatures, measured with three angles of incidence (59°, 67°, and 75°). The optical constants of 100 nm thick ALD-TiO2 and various combinational thicknesses of ALD-Al2O3 films are used to predict TOCs using a polynomial fitting algorithm.

  15. Properties of atomic-layer-deposited Al2O3/ZnO dielectric films grown at low temperature for RF MEMS

    NASA Astrophysics Data System (ADS)

    Herrmann, Cari F.; Del Rio, Frank W.; George, Steven M.; Bright, Victor M.

    2005-01-01

    Al2O3/ZnO alloy films were grown at 100°C using atomic layer deposition (ALD) techniques. It has been previously established that the resistivity of these films can be tuned over a wide range by varying the amount of Zn in the film. Al2O3/ZnO ALD alloy films can therefore be designed with a dielectric constant high enough to provide a large down-state capacitance and a resistivity low enough to promote the dissipation of trapped charges. The material and electrical properties of the Al2O3/ZnO ALD films were investigated using Auger electron spectroscopy (AES), nanoindentation, and mercury probe measurements. Chemical analysis using AES confirmed the presence of both Al and Zn in the alloys. The nanoindentation measurements were used to calculate the Young's modulus and hardness of the films. Pure Al2O3 ALD was determined to have a modulus between 150 and 155 GPa and a hardness of ~8 GPa, while the results for pure ZnO ALD indicated a modulus between 120 and 140 GPa and a hardness of ~5 GPa. An Al2O3/ZnO ALD alloy displayed a modulus of 140-145 GPa, which falls between the two pure films, and a hardness of ~8 GPa, which is similar to the pure Al2O3 film. The dielectric constants of the ALD films were calculated from the mercury probe measurements and were determined to be around 6.8. These properties indicate that the Al2O3/ZnO ALD films can be engineered as a property specific dielectric layer for RF MEMS devices.

  16. Silicon solar cells with Al2O3 antireflection coating

    NASA Astrophysics Data System (ADS)

    Dobrzański, Leszek; Szindler, Marek; Drygała, Aleksandra; Szindler, Magdalena

    2014-09-01

    The paper presents the possibility of using Al2O3 antireflection coatings deposited by atomic layer deposition ALD. The ALD method is based on alternate pulsing of the precursor gases and vapors onto the substrate surface and then chemisorption or surface reaction of the precursors. The reactor is purged with an inert gas between the precursor pulses. The Al2O3 thin film in structure of the finished solar cells can play the role of both antireflection and passivation layer which will simplify the process. For this research 50×50 mm monocrystalline silicon solar cells with one bus bar have been used. The metallic contacts were prepared by screen printing method and Al2O3 antireflection coating by ALD method. Results and their analysis allow to conclude that the Al2O3 antireflection coating deposited by ALD has a significant impact on the optoelectronic properties of the silicon solar cell. For about 80 nm of Al2O3 the best results were obtained in the wavelength range of 400 to 800 nm reducing the reflection to less than 1%. The difference in the solar cells efficiency between with and without antireflection coating was 5.28%. The LBIC scan measurements may indicate a positive influence of the thin film Al2O3 on the bulk passivation of the silicon.

  17. Performance of AlGaN/GaN MISHFET using dual-purpose thin Al2O3 layer for surface protection and gate insulator

    NASA Astrophysics Data System (ADS)

    Kim, Do-Kywn; Sindhuri, V.; Jo, Young-Woo; Kim, Dong-Seok; Kang, Hee-Sung; Lee, Jun-Hyeok; Lee, Yong Soo; Bae, Youngho; Hahm, Sung-Ho; Lee, Jung-Hee

    2014-10-01

    In this work, we have investigated a role of a thin Al2O3 layer in AlGaN/GaN MISHFET by characterizing the variation of the sheet resistance of the 2DEG channel layer. The Al2O3 layer, varying the thickness from 0 to 10 nm, was utilized as the gate insulator of the device as well as the surface protection layer during RTP for ohmic contact formation. After RTP, the 2DEG channel layer without the Al2O3 layer was rapidly degraded by increasing the sheet resistance of the layer to 1360 Ω/□ from the sheet resistance of 400 Ω/□ of the as-grown sample. The degradation was still observed even when 1.5 nm-thick Al2O3 layer was used. However, the sheet resistances of the devices remained constant with slightly decreased value from that of the as-grown sample when the thickness is larger than 3 nm, which indicates that the 3 nm-thick Al2O3 layer well protects the AlGaN surface above the 2DEG channel during RTP. The slight decrease in sheet resistance is probably because some acceptor-like states existing at AlGaN surface become neutralized and hence the 2DEG density increases. The Al2O3 layer was not removed for proceeding the fabrication of AlGaN/GaN MISHFET, but rather used as a gate dielectric, which simplifies the device fabrication eliminating the additional deposition steps for the gate dielectric. The threshold voltage of the device, investigated in this work, was increased to the negative direction with increasing the thickness of Al2O3 layers while the transconductance was decreased. The best performances were obtained from the device with 8 nm-thick Al2O3 layer, exhibiting very low gate leakage current of 10-9 A/mm with subthreshold swing (SS) of 80 mV/dec and very high Ion/Ioff ratio (>9 orders).

  18. The origin of low water vapor transmission rates through Al2O3/ZrO2 nanolaminate gas-diffusion barriers grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Meyer, J.; Schmidt, H.; Kowalsky, W.; Riedl, T.; Kahn, A.

    2010-06-01

    This paper reports on thin film gas-diffusion barriers consisting of Al2O3/ZrO2 nanolaminates (NL) grown by low-temperature (80 °C) atomic layer deposition. We show that reliable barriers with water vapor transmission rates of 3.2×10-4 g/(m2 day), measured at 80 °C and 80% relative humidity, can be realized with very thin layers down to 40 nm. We determine that ZrO2 acts as anticorrosion element in our NL. Furthermore, we demonstrate by x-ray photoemission spectroscopy that an aluminate phase is formed at the interfaces between Al2O3 and ZrO2 sublayers, which additionally improves the gas-diffusion barrier due to a densification of the layer system. These Al2O3/ZrO2 NLs prepared at low temperatures hold considerable promises for application in organic electronics and beyond.

  19. Atomic layer deposition of Al-doped ZnO/Al2O3 double layers on vertically aligned carbon nanofiber arrays.

    PubMed

    Malek, Gary A; Brown, Emery; Klankowski, Steven A; Liu, Jianwei; Elliot, Alan J; Lu, Rongtao; Li, Jun; Wu, Judy

    2014-05-14

    High-aspect-ratio, vertically aligned carbon nanofibers (VACNFs) were conformally coated with aluminum oxide (Al2O3) and aluminum-doped zinc oxide (AZO) using atomic layer deposition (ALD) in order to produce a three-dimensional array of metal-insulator-metal core-shell nanostructures. Prefunctionalization before ALD, as required for initiating covalent bonding on a carbon nanotube surface, was eliminated on VACNFs due to the graphitic edges along the surface of each CNF. The graphitic edges provided ideal nucleation sites under sequential exposures of H2O and trimethylaluminum to form an Al2O3 coating up to 20 nm in thickness. High-resolution transmission electron microscopy (HRTEM) and scanning electron microscopy images confirmed the conformal core-shell AZO/Al2O3/CNF structures while energy-dispersive X-ray spectroscopy verified the elemental composition of the different layers. HRTEM selected area electron diffraction revealed that the as-made Al2O3 by ALD at 200 °C was amorphous, and then, after annealing in air at 450 °C for 30 min, was converted to polycrystalline form. Nevertheless, comparable dielectric constants of 9.3 were obtained in both cases by cyclic voltammetry at a scan rate of 1000 V/s. The conformal core-shell AZO/Al2O3/VACNF array structure demonstrated in this work provides a promising three-dimensional architecture toward applications of solid-state capacitors with large surface area having a thin, leak-free dielectric.

  20. Excellent Passivation and Low Reflectivity Al2O3/TiO2 Bilayer Coatings for n-Wafer Silicon Solar Cells: Preprint

    SciTech Connect

    Lee, B. G.; Skarp, J.; Malinen, V.; Li, S.; Choi, S.; Branz, H. M.

    2012-06-01

    A bilayer coating of Al2O3 and TiO2 is used to simultaneously achieve excellent passivation and low reflectivity on p-type silicon. This coating is targeted for achieving high efficiency n-wafer Si solar cells, where both passivation and anti-reflection (AR) are needed at the front-side p-type emitter. It could also be valuable for front-side passivation and AR of rear-emitter and interdigitated back contact p-wafer cells. We achieve high minority carrier lifetimes {approx}1 ms, as well as a nearly 2% decrease in absolute reflectivity, as compared to a standard silicon nitride AR coating.

  1. Atomic to Nanoscale Investigation of Functionalities of an Al2O3 Coating Layer on a Cathode for Enhanced Battery Performance

    SciTech Connect

    Yan, Pengfei; Zheng, Jianming; Zhang, Xiaofeng; Xu, Rui; Amine, Khalil; Xiao, J; Zhang, Ji-Guang; Wang, Chong-Min

    2016-02-09

    Surface coating has been identified as an effective approach for enhancing the capacity retention of layered structure cathode. However, the underlying operating mechanism of such a thin coating layer, in terms of surface chemical functionality and capacity retention, remains unclear. In this work, we use aberration-corrected scanning transmission electron microscopy and high-efficiency spectroscopy to probe the delicate functioning mechanism of an Al2O3 coating layer on a Li1.2Ni0.2Mn0.6O2 cathode. We discovered that in terms of surface chemical function, the Al2O3 coating suppresses the side reaction between the cathode and the electrolyte during battery cycling. At the same time, the Al2O3 coating layer also eliminates the chemical reduction of Mn from the cathode particle surface, therefore preventing the dissolution of the reduced Mn into the electrolyte. In terms of structural stability, we found that the Al2O3 coating layer can mitigate the layer to spinel phase transformation, which otherwise will be initiated from the particle surface and propagate toward the interior of the particle with the progression of battery cycling. The atomic to nanoscale effects of the coating layer observed here provide insight into the optimized design of a coating layer on a cathode to enhance the battery properties.

  2. Atomic layer deposition (ALD) of TiO2 and Al2O3 thin films on silicon

    NASA Astrophysics Data System (ADS)

    Mitchell, David R. G.; Triani, Gerry; Attard, Darren J.; Finnie, Kim S.; Evans, Peter J.; Barbe, Christophe J.; Bartlett, John R.

    2004-04-01

    The essential features of the ALD process involve sequentially saturating a surface with a (sub)monolayer of reactive species, such as a metal halide, then reacting it with a second species to form the required phase in-situ. Repetition of the reaction sequence allows the desired thickness to be deposited. The self-limiting nature of the reactions ensures excellent conformality, and sequential processing results in exquisite control over film thickness, albeit at rather slow deposition rates, typically <200nm/hr. We have been developing our capability with ALD deposition, to understand the influence of deposition parameters on the nature of TiO2 and Al2O3 films (high and low refractive index respectively), and multilayer stacks thereof. These stacks have potential applications as anti-reflection coatings and optical filters. This paper will explore the evolution of structure in our films as a function of deposition parameters including temperature and substrate surface chemistry. A broad range of techniques have been applied to the study of these films, including cross sectional transmission electron microscopy, spectroscopic ellipsometry, secondary ion mass spectrometry etc. These have enabled a wealth of microstructural and compositional information on the films to be acquired, such as accurate film thickness, composition, crystallization sequence and orientation with respect to the substrate. The ALD method is shown to produce single layer films and multilayer stacks with exceptional uniformity and flatness, and in the case of stacks, chemically abrupt interfaces. We are currently extending this technology to the coating of polymeric substrates.

  3. Thermo-Optical Properties of Thin-Film TiO2–Al2O3 Bilayers Fabricated by Atomic Layer Deposition

    PubMed Central

    Ali, Rizwan; Saleem, Muhammad Rizwan; Pääkkönen, Pertti; Honkanen, Seppo

    2015-01-01

    We investigate the optical and thermo-optical properties of amorphous TiO2–Al2O3 thin-film bilayers fabricated by atomic layer deposition (ALD). Seven samples of TiO2–Al2O3 bilayers are fabricated by growing Al2O3 films of different thicknesses on the surface of TiO2 films of constant thickness (100 nm). Temperature-induced changes in the optical refractive indices of these thin-film bilayers are measured by a variable angle spectroscopic ellipsometer VASE®. The optical data and the thermo-optic coefficients of the films are retrieved and calculated by applying the Cauchy model and the linear fitting regression algorithm, in order to evaluate the surface porosity model of TiO2 films. The effects of TiO2 surface defects on the films’ thermo-optic properties are reduced and modified by depositing ultra-thin ALD-Al2O3 diffusion barrier layers. Increasing the ALD-Al2O3 thickness from 20 nm to 30 nm results in a sign change of the thermo-optic coefficient of the ALD-TiO2. The thermo-optic coefficients of the 100 nm-thick ALD-TiO2 film and 30 nm-thick ALD-Al2O3 film in a bilayer are (0.048 ± 0.134) × 10−4 °C−1 and (0.680 ± 0.313) × 10−4 °C−1, respectively, at a temperature T = 62 °C.

  4. Improved memory characteristics of charge trap memory by employing double layered ZrO2 nanocrystals and inserted Al2O3

    NASA Astrophysics Data System (ADS)

    Tang, Z. J.; Li, R.; Zhang, X. W.; Hu, D.; Zhao, Y. G.

    2016-07-01

    The charge trap memory capacitors incorporating a stacked charge trapping layer consisting of double layered ZrO2 nanocrystals (NCs) and inserted Al2O3 have been fabricated and investigated. It is observed that the memory capacitor with stacked trapping layer exhibits a hysteresis window as large as 14.3 V for ±10 V sweeping gate voltage range, faster program/erase speed, improved endurance performance, and good data retention characteristics with smaller extrapolated ten years charge loss at room temperature and 125 °C compared to single layered NCs. The special energy band alignment and the introduced additional traps of double layered ZrO2 NCs and inserted Al2O3 change the trapping and loss behavior of charges, and jointly contribute to the remarkable memory characteristics. Therefore, the memory capacitor with a stacked charge trapping layer is a promising candidate in future nonvolatile charge trap memory device design and application.

  5. Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3

    NASA Astrophysics Data System (ADS)

    Chou, H.-Y.; O'Connor, E.; O'Mahony, A.; Povey, I. M.; Hurley, P. K.; Dong, Lin; Ye, P. D.; Afanas'ev, V. V.; Houssa, M.; Stesmans, A.

    2016-12-01

    Spectral analysis of optically excited currents in single-crystal (100)InAs/amorphous (a-)Al2O3/metal structures allows one to separate contributions stemming from the internal photoemission (IPE) of electrons into alumina and from the trapping-related displacement currents. IPE spectra suggest that the out-diffusion of In and, possibly, its incorporation in a-Al2O3 lead to the development of ≈0.4 eV wide conduction band (CB) tail states. The top of the InAs valence band is found at 3.45 ± 0.10 eV below the alumina CB bottom, i.e., at the same energy as at the GaAs/a-Al2O3 interface. This corresponds to the CB and the valence band offsets at the InAs/a-Al2O3 interface of 3.1 ± 0.1 eV and 2.5 ± 0.1 eV, respectively. However, atomic-layer deposition of alumina on InAs results in additional low-energy electron transitions with spectral thresholds in the range of 2.0-2.2 eV, which is close to the bandgap of AlAs. The latter suggests the interaction of As with Al, leading to an interlayer containing Al-As bonds providing a lower barrier for electron injection.

  6. Study of ZrO2/Al2O3/ZrO2 and Al2O3/ZrO2/Al2O3 stack structures deposited by sol-gel method on Si

    NASA Astrophysics Data System (ADS)

    Vitanov, P.; Harizanova, A.; Ivanova, T.; Dimitrova, T.

    2010-02-01

    Based on our previous experience with pseudobinary alloys of (Al2O3)x(ZrO2)1-x as high-k materials and passivating coatings for solar cells, stack systems of ZrO2/Al2O3/ZrO2and Al2O3/ZrO2/Al2O3, deposited by simple and low cost sol-gel technology have been studied. The thin films of ZrO2 and Al2O3 were sequentially obtained on Si substrates including spin coating deposition from stable solutions. High resolution scanning electron microscopy (HRSEM) was used to compare the morphology of the nanolaminates. The layers were optically characterized by UV-VIS spectrophotometry. The electrical measurements were carried out on metal-insulator-semiconductor (MIS) structures. Their leakage current and relative permittivity were determined.

  7. Hydrophobicity enhancement of Al2O3 thin films deposited on polymeric substrates by atomic layer deposition with perfluoropropane plasma treatment

    NASA Astrophysics Data System (ADS)

    Ali, Kamran; Choi, Kyung-Hyun; Kim, Chang Young; Doh, Yang Hoi; Jo, Jeongdai

    2014-06-01

    The optoelectronics devices such as organic light emitting diodes are greatly vulnerable to moisture, which reduces their functionality and life cycle. The Al2O3 thin films are mostly used as barrier coatings in such electronic devices to protect them from water vapors. The performance of the Al2O3 barrier films can be improved by enhancing their hydrophobicity. Greater the hydrophobicity of the barrier films, greater will be their protection against water vapors. This paper reports on the enhancement of hydrophobicity of Al2O3 thin films through perfluoropropane (C3F8) plasma treatment. Firstly, good quality Al2O3 films have been fabricated through atomic layer deposition (ALD) on polyethylene naphthalate (PEN) substrates at different temperatures. The fabricated films are then plasma treated with C3F8 to enhance their hydrophobicity. Hydrophobic Al2O3 thin films have shown good morphological and optical properties. Low average arithmetic roughness (Ra) of 1.90 nm, 0.93 nm and 0.88 nm have been recorded for the C3F8 plasma treated films deposited at room temperature (RT), 50 °C and 150 °C, respectively. Optical transmittance of more than 90% has been achieved for the C3F8 plasma treated films grown at 50 °C and 150 °C. The contact angle has been increased from 48° ± 3 to 158° ± 3 for the films deposited at RT and increased from 41° ± 3 to 148° ± 3 for the films deposited at 150 °C.

  8. Effect of annealing processes on the electrical properties of the atomic layer deposition Al2O3/In0.53Ga0.47As metal oxide semiconductor capacitors

    NASA Astrophysics Data System (ADS)

    Luc, Quang-Ho; Chang, Edward Yi; Trinh, Hai-Dang; Nguyen, Hong-Quan; Tran, Binh-Tinh; Lin, Yueh-Chin

    2014-01-01

    The influence of different annealing processes including post deposition annealing (PDA) and post metallization annealing (PMA) with various temperatures (250-400 °C) and ambient [N2 and forming gas (FG)] on the electrical characteristics of Pt/Al2O3/In0.53Ga0.47As MOSCAPs are systemically studied. Comparing to samples underwent high PDA temperature, the higher leakage current has been observed for all of samples underwent high PMA temperature. This has resulted in the degradation of capacitance-voltage (C-V) behaviors. In conjunction with the current-voltage (J-V) measurement, depth profiling Auger electron spectroscopy (AES) and high-resolution transmission electron microscopy (HRTEM) analyses evidence that the out-diffusion of metal into oxide layer is the main source of leakage current. The noticeable passivation effect on the Al2O3/InGaAs interface has also been confirmed by the samples that underwent PDA process.

  9. Temperature Dependent Border Trap Response Produced by a Defective Interfacial Oxide Layer in Al2O3/InGaAs Gate Stacks.

    PubMed

    Tang, Kechao; Meng, Andrew C; Droopad, Ravi; McIntyre, Paul C

    2016-11-09

    Intentional oxidation of an As2-decapped (100) In0.57Ga0.43As substrate by additional H2O dosing during initial Al2O3 gate dielectric atomic layer deposition (ALD) increases the interface trap density (Dit), lowers the band edge photoluminescence (PL) intensity, and generates Ga-oxide detected by X-ray photoelectron spectroscopy (XPS). Aberration-corrected high resolution transmission electron microscopy (TEM) reveals formation of an amorphous interfacial layer which is distinct from the Al2O3 dielectric and which is not present without the additional H2O dosing. Observation of a temperature dependent border trap response, associated with the frequency dispersion of the accumulation capacitance and conductance of metal-oxide-semiconductor (MOS) structures, is found to be correlated with the presence of this defective interfacial layer. MOS capacitors prepared with additional H2O dosing show a notable decrease (∼20%) of accumulation dispersion over 5 kHz to 500 kHz when the measurement temperature decreases from room temperature to 77 K, while capacitors prepared with an abrupt Al2O3/InGaAs interface display little change (<2%) with temperature. Similar temperature-dependent border trap response is also observed when the (100) InGaAs surface is treated with a previously reported HCl(aq) wet cleaning procedure prior to Al2O3 ALD. These results point out the sensitivity of the temperature dependence of the border trap response in metal oxide/III-V MOS gate stacks to the presence of processing-induced interface oxide layers, which alter the dynamics of carrier trapping at defects that are not located at the semiconductor interface.

  10. Atomic-layer-deposited Al2O3 and HfO2 on InAlAs: A comparative study of interfacial and electrical characteristics

    NASA Astrophysics Data System (ADS)

    Wu, Li-Fan; Zhang, Yu-Ming; Lv, Hong-Liang; Zhang, Yi-Men

    2016-10-01

    Al2O3 and HfO2 thin films are separately deposited on n-type InAlAs epitaxial layers by using atomic layer deposition (ALD). The interfacial properties are revealed by angle-resolved x-ray photoelectron spectroscopy (AR-XPS). It is demonstrated that the Al2O3 layer can reduce interfacial oxidation and trap charge formation. The gate leakage current densities are 1.37 × 10-6 A/cm2 and 3.22 × 10-6 A/cm2 at +1 V for the Al2O3/InAlAs and HfO2/InAlAs MOS capacitors respectively. Compared with the HfO2/InAlAs metal-oxide-semiconductor (MOS) capacitor, the Al2O3/InAlAs MOS capacitor exhibits good electrical properties in reducing gate leakage current, narrowing down the hysteresis loop, shrinking stretch-out of the C-V characteristics, and significantly reducing the oxide trapped charge (Q ot) value and the interface state density (D it). Project supported by the National Basic Research Program of China (Grant No. 2010CB327505), the Advanced Research Foundation of China (Grant No. 914xxx803-051xxx111), the National Defense Advance Research Project, China (Grant No. 513xxxxx306), the National Natural Science Foundation of China (Grant No. 51302215), the Scientific Research Program Funded by Shaanxi Provincial Education Department, China (Grant No. 14JK1656), and the Science and Technology Project of Shaanxi Province, China (Grant No. 2016KRM029).

  11. Dipolar interactions and their influence on the critical single domain grain size of Ni in layered Ni/Al(2)O(3) composites.

    PubMed

    Das, R; Gupta, A; Kumar, D; Oh, S H; Pennycook, S J; Hebard, A F

    2008-09-24

    Pulsed laser deposition has been used to fabricate Ni/Al(2)O(3) multilayer composites in which Ni nanoparticles with diameters in the range of 3-60 nm are embedded as layers in an insulating Al(2)O(3) host. At fixed temperatures, the coercive fields plotted as a function of particle size show well-defined peaks, which define a critical size that delineates a crossover from coherently rotating single domain to multiple domain behavior. We observe a shift in peak position to higher grain size as temperature increases and describe this shift with theory that takes into account the decreasing influence of dipolar magnetic interactions from thermally induced random orientations of neighboring grains.

  12. Dipolar interactions and their influence on the critical single domain grain size of Ni in layered Ni/Al(2)O(3) composites

    SciTech Connect

    Das, R; Gupta, A.; Ho, S; Pennycook, Stephen J; Hebard, A.

    2008-01-01

    Pulsed laser deposition has been used to fabricate Ni/Al2O3 multilayer composites in which Ni nanoparticles with diameters in the range of 3 60 nm are embedded as layers in an insulating Al2O3 host. At fixed temperatures, the coercive fields plotted as a function of particle size show well-defined peaks, which define a critical size that delineates a crossover from coherently rotating single domain to multiple domain behavior. We observe a shift in peak position to higher grain size as temperature increases and describe this shift with theory that takes into account the decreasing influence of dipolar magnetic interactions from thermally induced random orientations of neighboring grains.

  13. Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics

    NASA Astrophysics Data System (ADS)

    Xie, Xianzong; Rieth, Loren; Merugu, Srinivas; Tathireddy, Prashant; Solzbacher, Florian

    2012-08-01

    Encapsulation of biomedical implants with complex three dimensional geometries is one of the greatest challenges achieving long-term functionality and stability. This report presents an encapsulation scheme that combines Al2O3 by atomic layer deposition with parylene C for implantable electronic systems. The Al2O3-parylene C bi-layer was used to encapsulate interdigitated electrodes, which were tested invitro by soak testing in phosphate buffered saline solution at body temperature (37 °C) and elevated temperatures (57 °C and 67 °C) for accelerated lifetime testing up to 5 months. Leakage current and electrochemical impedance spectroscopy were measured for evaluating the integrity and insulation performance of the coating. Leakage current was stably about 15 pA at 5 V dc, and impedance was constantly about 3.5 MΩ at 1 kHz by using electrochemical impedance spectroscopy for samples under 67 °C about 5 months (approximately equivalent to 40 months at 37 °C). Alumina and parylene coating lasted at least 3 times longer than parylene coated samples tested at 80 °C. The excellent insulation performance of the encapsulation shows its potential usefulness for chronic implants.

  14. Electrical and photo-electrical properties of MoS2 nanosheets with and without an Al2O3 capping layer under various environmental conditions

    PubMed Central

    Khan, Muhammad Farooq; Nazir, Ghazanfar; lermolenko, Volodymyr M.; Eom, Jonghwa

    2016-01-01

    Abstract The electrical and photo-electrical properties of exfoliated MoS2 were investigated in the dark and in the presence of deep ultraviolet (DUV) light under various environmental conditions (vacuum, N2 gas, air, and O2 gas). We examined the effects of environmental gases on MoS2 flakes in the dark and after DUV illumination through Raman spectroscopy and found that DUV light induced red and blue shifts of peaks (E1 2 g and A1 g) position in the presence of N2 and O2 gases, respectively. In the dark, the threshold voltage in the transfer characteristics of few-layer (FL) MoS2 field-effect transistors (FETs) remained almost the same in vacuum and N2 gas but shifted toward positive gate voltages in air or O2 gas because of the adsorption of oxygen atoms/molecules on the MoS2 surface. We analyzed light detection parameters such as responsivity, detectivity, external quantum efficiency, linear dynamic range, and relaxation time to characterize the photoresponse behavior of FL-MoS2 FETs under various environmental conditions. All parameters were improved in their performances in N2 gas, but deteriorated in O2 gas environment. The photocurrent decayed with a large time constant in N2 gas, but decayed with a small time constant in O2 gas. We also investigated the characteristics of the devices after passivating by Al2O3 film on the MoS2 surface. The devices became almost hysteresis-free in the transfer characteristics and stable with improved mobility. Given its outstanding performance under DUV light, the passivated device may be potentially used for applications in MoS2-based integrated optoelectronic circuits, light sensing devices, and solar cells. PMID:27877867

  15. Influences of annealing on structural and compositional properties of Al2O3 thin films grown on 4H-SiC by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Tian, Li-Xin; Zhang, Feng; Shen, Zhan-Wei; Yan, Guo-Guo; Liu, Xing-Fang; Zhao, Wan-Shun; Wang, Lei; Sun, Guo-Sheng; Zeng, Yi-Ping

    2016-12-01

    Annealing effects on structural and compositional performances of Al2O3 thin films on 4H-SiC substrates are studied comprehensively. The Al2O3 films are grown by atomic layer deposition through using trimethylaluminum and H2O as precursors at 300 °C, and annealed at various temperatures in ambient N2 for 1 min. The Al2O3 film transits from amorphous phase to crystalline phase as annealing temperature increases from 750 °C to 768 °C. The refractive index increases with annealing temperature rising, which indicates that densification occurs during annealing. The densification and grain formation of the film upon annealing are due to crystallization which is relative with second-nearest-neighbor coordination variation according to the x-ray photoelectron spectroscopy (XPS). Although the binding energies of Al 2p and O 1s increase together during crystallization, separations between Al 2p and O 1s are identical between as-deposited and annealed sample, which suggests that the nearest-neighbour coordination is similar. Project supported by the National Basic Research Program of China (Grant No. 2015CB759600), the National Natural Science Foundation of China (Grant Nos. 61474113, 61574140, and 61274007), and the Beijing Nova Program, China (Grant No. xx2016071), and the CAEP Microsystem and THz Science and Technology Foundation (Grant No. CAEPMT201502).

  16. Improvement of performance in low temperature solid oxide fuel cells operated on ethanol and air mixtures using Cu-ZnO-Al2O3 catalyst layer

    NASA Astrophysics Data System (ADS)

    Morales, M.; Espiell, F.; Segarra, M.

    2015-10-01

    Anode-supported single-chamber solid oxide fuel cells with and without Cu-ZnO-Al2O3 catalyst layers deposited on the anode support have been operated on ethanol and air mixtures. The cells consist of gadolinia-doped ceria electrolyte, Ni-doped ceria anode, and La0.6Sr0.4CoO3-δ-doped ceria cathode. Catalyst layers with different Cu-ZnO-Al2O3 ratios are deposited and sintered at several temperatures. Since the performance of single-chamber fuel cells strongly depends on catalytic properties of electrodes for partial oxidation of ethanol, the cells are electrochemically characterized as a function of the temperature, ethanol-air molar ratio and gas flow rate. In addition, catalytic activities of supported anode, catalytic layer-supported anode and cathode for partial oxidation of ethanol are analysed. Afterwards, the effect of composition and sintering temperature of catalyst layer on the cell performance are determined. The results indicate that the cell performance can be significantly enhanced using catalyst layers of 30:35:35 and 40:30:30 wt.% Cu-ZnO-Al2O3 sintered at 1100 °C, achieving power densities above 50 mW cm-2 under 0.45 ethanol-air ratio at temperatures as low as 450 °C. After testing for 15 h, all cells present a gradual loss of power density, without carbon deposition, which is mainly attributed to the partial re-oxidation of Ni at the anode.

  17. Role of Ge and Si substrates in higher-k tetragonal phase formation and interfacial properties in cyclical atomic layer deposition-anneal Hf1-xZrxO2/Al2O3 thin film stacks

    NASA Astrophysics Data System (ADS)

    Dey, Sonal; Tapily, Kandabara; Consiglio, Steven; Clark, Robert D.; Wajda, Cory S.; Leusink, Gert J.; Woll, Arthur R.; Diebold, Alain C.

    2016-09-01

    Using a five-step atomic layer deposition (ALD)-anneal (DADA) process, with 20 ALD cycles of metalorganic precursors followed by 40 s of rapid thermal annealing at 1073 K, we have developed highly crystalline Hf1-xZrxO2 (0 ≤ x ≤ 1) thin films (<7 nm) on ˜1 nm ALD Al2O3 passivated Ge and Si substrates for applications in higher-k dielectric metal oxide semiconductor field effect transistors below 10 nm technology node. By applying synchrotron grazing incidence x-ray d-spacing maps, x-ray photoelectron spectroscopy (XPS), and angle-resolved XPS, we have identified a monoclinic to tetragonal phase transition with increasing ZrO2 content, elucidated the role of the Ge vs Si substrates in complete tetragonal phase formation (CTPF), and determined the interfacial characteristics of these technologically relevant films. The ZrO2 concentration required for CTPF is lower on Ge than on Si substrates (x ˜ 0.5 vs. x ˜ 0.86), which we attribute as arising from the growth of an ultra-thin layer of metal germanates between the Hf1-xZrxO2 and Al2O3/Ge, possibly during the first deposition and annealing cycle. Due to Ge-induced tetragonal phase stabilization, the interfacial metal germanates could act as a template for the subsequent preferential growth of the tetragonal Hf1-xZrxO2 phase following bottom-up crystallization during the DADA ALD process. We surmise that the interfacial metal germanate layer also function as a diffusion barrier limiting excessive Ge uptake into the dielectric film. An ALD Al2O3 passivation layer of thickness ≥1.5 nm is required to minimize Ge diffusion for developing highly conformal and textured HfO2 based higher-k dielectrics on Ge substrates using the DADA ALD process.

  18. The importance of dye chemistry and TiCl4 surface treatment in the behavior of Al2O3 recombination barrier layers deposited by atomic layer deposition in solid-state dye-sensitized solar cells.

    PubMed

    Brennan, Thomas P; Bakke, Jonathan R; Ding, I-Kang; Hardin, Brian E; Nguyen, William H; Mondal, Rajib; Bailie, Colin D; Margulis, George Y; Hoke, Eric T; Sellinger, Alan; McGehee, Michael D; Bent, Stacey F

    2012-09-21

    Atomic layer deposition (ALD) was used to fabricate Al(2)O(3) recombination barriers in solid-state dye-sensitized solar cells (ss-DSSCs) employing an organic hole transport material (HTM) for the first time. Al(2)O(3) recombination barriers of varying thickness were incorporated into efficient ss-DSSCs utilizing the Z907 dye adsorbed onto a 2 μm-thick nanoporous TiO(2) active layer and the HTM spiro-OMeTAD. The impact of Al(2)O(3) barriers was also studied in devices employing different dyes, with increased active layer thicknesses, and with substrates that did not undergo the TiCl(4) surface treatment. In all instances, electron lifetimes (as determined by transient photovoltage measurements) increased and dark current was suppressed after Al(2)O(3) deposition. However, only when the TiCl(4) treatment was eliminated did device efficiency increase; in all other instances efficiency decreased due to a drop in short-circuit current. These results are attributed in the former case to the similar effects of Al(2)O(3) ALD and the TiCl(4) surface treatment whereas the insulating properties of Al(2)O(3) hinder charge injection and lead to current loss in TiCl(4)-treated devices. The impact of Al(2)O(3) barrier layers was unaffected by doubling the active layer thickness or using an alternative ruthenium dye, but a metal-free donor-π-acceptor dye exhibited a much smaller decrease in current due to its higher excited state energy. We develop a model employing prior research on Al(2)O(3) growth and dye kinetics that successfully predicts the reduction in device current as a function of ALD cycles and is extendable to different dye-barrier systems.

  19. Dual-Layer Oxidation-Protective Plasma-Sprayed SiC-ZrB2/Al2O3-Carbon Nanotube Coating on Graphite

    NASA Astrophysics Data System (ADS)

    Ariharan, S.; Sengupta, Pradyut; Nisar, Ambreen; Agnihotri, Ankur; Balaji, N.; Aruna, S. T.; Balani, Kantesh

    2016-12-01

    Graphite is used in high-temperature gas-cooled reactors because of its outstanding irradiation performance and corrosion resistance. To restrict its high-temperature (>873 K) oxidation, atmospheric-plasma-sprayed SiC-ZrB2-Al2O3-carbon nanotube (CNT) dual-layer coating was deposited on graphite substrate in this work. The effect of each layer was isolated by processing each component of the coating via spark plasma sintering followed by isothermal kinetic studies. Based on isothermal analysis and the presence of high residual thermal stress in the oxide scale, degradation appeared to be more severe in composites reinforced with CNTs. To avoid the complexity of analysis of composites, the high-temperature activation energy for oxidation was calculated for the single-phase materials only, yielding values of 11.8, 20.5, 43.5, and 4.5 kJ/mol for graphite, SiC, ZrB2, and CNT, respectively, with increased thermal stability for ZrB2 and SiC. These results were then used to evaluate the oxidation rate for the composites analytically. This study has broad implications for wider use of dual-layer (SiC-ZrB2/Al2O3) coatings for protecting graphite crucibles even at temperatures above 1073 K.

  20. Dual-Layer Oxidation-Protective Plasma-Sprayed SiC-ZrB2/Al2O3-Carbon Nanotube Coating on Graphite

    NASA Astrophysics Data System (ADS)

    Ariharan, S.; Sengupta, Pradyut; Nisar, Ambreen; Agnihotri, Ankur; Balaji, N.; Aruna, S. T.; Balani, Kantesh

    2017-02-01

    Graphite is used in high-temperature gas-cooled reactors because of its outstanding irradiation performance and corrosion resistance. To restrict its high-temperature (>873 K) oxidation, atmospheric-plasma-sprayed SiC-ZrB2-Al2O3-carbon nanotube (CNT) dual-layer coating was deposited on graphite substrate in this work. The effect of each layer was isolated by processing each component of the coating via spark plasma sintering followed by isothermal kinetic studies. Based on isothermal analysis and the presence of high residual thermal stress in the oxide scale, degradation appeared to be more severe in composites reinforced with CNTs. To avoid the complexity of analysis of composites, the high-temperature activation energy for oxidation was calculated for the single-phase materials only, yielding values of 11.8, 20.5, 43.5, and 4.5 kJ/mol for graphite, SiC, ZrB2, and CNT, respectively, with increased thermal stability for ZrB2 and SiC. These results were then used to evaluate the oxidation rate for the composites analytically. This study has broad implications for wider use of dual-layer (SiC-ZrB2/Al2O3) coatings for protecting graphite crucibles even at temperatures above 1073 K.

  1. Corrosion Protection of Copper Using Al2O3, TiO2, ZnO, HfO2, and ZrO2 Atomic Layer Deposition.

    PubMed

    Daubert, James S; Hill, Grant T; Gotsch, Hannah N; Gremaud, Antoine P; Ovental, Jennifer S; Williams, Philip S; Oldham, Christopher J; Parsons, Gregory N

    2017-02-01

    Atomic layer deposition (ALD) is a viable means to add corrosion protection to copper metal. Ultrathin films of Al2O3, TiO2, ZnO, HfO2, and ZrO2 were deposited on copper metal using ALD, and their corrosion protection properties were measured using electrochemical impedance spectroscopy (EIS) and linear sweep voltammetry (LSV). Analysis of ∼50 nm thick films of each metal oxide demonstrated low electrochemical porosity and provided enhanced corrosion protection from aqueous NaCl solution. The surface pretreatment and roughness was found to affect the extent of the corrosion protection. Films of Al2O3 or HfO2 provided the highest level of initial corrosion protection, but films of HfO2 exhibited the best coating quality after extended exposure. This is the first reported instance of using ultrathin films of HfO2 or ZrO2 produced with ALD for corrosion protection, and both are promising materials for corrosion protection.

  2. Thickness effect on the optical and morphological properties in Al2O3/ZnO nanolaminate thin films prepared by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    López, J.; Martínez, J.; Abundiz, N.; Domínguez, D.; Murillo, E.; Castillón, F. F.; Machorro, R.; Farías, M. H.; Tiznado, H.

    2016-02-01

    In this work, we studied the optical and morphological properties of ultrathin nanolaminate films based on Al2O3/ZnO (AZ) bilayers stack. The films were deposited on Si (100) by means of thermal atomic layer deposition (ALD) technique. The bilayer thicknesses (ratio = 1:1) were 0.2, 1, 2, 4, 10 and 20 nm. Refractive index (n) and band gap (Eg) of each nanolaminate were studied via spectroscopic ellipsometry (SE), and spectral reflectance ultraviolet-visible spectroscopy (UV-vis). Surface morphology and roughness parameters of the nanolaminates were measured by Atomic Force Microscopy (AFM). The optical and morphological properties were shown highly dependent on the bilayer thickness. Ellipsometric data treated through the Cody-Lorentz optical model revealed that the refractive index decreases for thinner bilayers. A sharp intensity decay of refractive index and peaks at the UV region (200-400 nm) indicated increased transparency for thinner bilayers. It is also shown that the band gap is tunable. The maximum band gap value was 4.8 eV. These results reveal that ZnO combined with Al2O3 as bilayers stack can be converted into a dielectric material with enhanced band gap, opening the possibility for new optical and dielectric applications.

  3. Electrical hysteresis in p-GaN metal-oxide-semiconductor capacitor with atomic-layer-deposited Al2O3 as gate dielectric

    NASA Astrophysics Data System (ADS)

    Zhang, Kexiong; Liao, Meiyong; Imura, Masataka; Nabatame, Toshihide; Ohi, Akihiko; Sumiya, Masatomo; Koide, Yasuo; Sang, Liwen

    2016-12-01

    The electrical hysteresis in current-voltage (I-V) and capacitance-voltage characteristics was observed in an atomic-layer-deposited Al2O3/p-GaN metal-oxide-semiconductor capacitor (PMOSCAP). The absolute minimum leakage currents of the PMOSCAP for forward and backward I-V scans occurred not at 0 V but at -4.4 and +4.4 V, respectively. A negative flat-band voltage shift of 5.5 V was acquired with a capacitance step from +4.4 to +6.1 V during the forward scan. Mg surface accumulation on p-GaN was demonstrated to induce an Mg-Ga-Al-O oxidized layer with a trap density on the order of 1013 cm-2. The electrical hysteresis is attributed to the hole trapping and detrapping process in the traps of the Mg-Ga-Al-O layer via the Poole-Frenkel mechanism.

  4. Electroluminescent layers based on ZnS:Cu deposited into matrices of porous anodic Al2O3

    NASA Astrophysics Data System (ADS)

    Valeev, R. G.; Petukhov, D. I.; Chukavin, A. I.; Bel'tyukov, A. N.

    2016-02-01

    It is suggested to use a new nanocomposite material—nanostructures of copper-doped zinc sulfide in a matrix of porous aluminum oxide—as a light-emitting layer of electroluminescent sources of light. The material was deposited by thermal evaporation in a vacuum. The microstructure of the layers, impurity distribution in the electroluminescent-phosphor layer, and electroluminescence spectra at various copper concentrations in ZnS:Cu were studied.

  5. Stable, Microfabricated Thin Layer Chromatography Plates without Volume Distortion on Patterned, Carbon and Al2O3-Primed Carbon Nanotube Forests

    SciTech Connect

    Jensen, David S.; Kanyal, Supriya S.; Gupta, Vipul; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Vanfleet, Richard; Davis, Robert C.; Linford, Matthew R.

    2012-09-28

    In a recent report (Song, J.; et al., Advanced Functional Materials 2011, 21, 1132-1139) some of us described the fabrication of thin layer chromatography (TLC) plates from patterned carbon nanotube (CNT) forests, which were directly infiltrated/coated with silicon by low pressure chemical vapor deposition (LPCVD) of silicon using SiH4. Following infiltration, the nanotubes were removed from the assemblies and the silicon simultaneously converted to SiO2 in a high temperature oxidation step. However, while straightforward, this process had some shortcomings, not the least of which was some distortion of the lithographically patterned features during the volume expansion that accompanied oxidation. Herein we overcome theis issue and also take substantial steps forward in the microfabrication of TLC plates by showing: (i) A new method for creating an adhesion promotion layer on CNT forests by depositing a few nanometers of carbon followed by atomic layer deposition (ALD) of Al2O3. This method for appears to be new, and X-ray photoelectron spectroscopy confirms the expected presence of oxygen after carbon deposition. ALD of Al2O3 alone and in combination with the carbon on patterned CNT forests was also explored as an adhesion promotion layer for CNT forest infiltration. (ii) Rapid, conformal deposition of an inorganic material that does not require subsequent oxidation: fast pseudo-ALD growth of SiO2 via alumina catalyzed deposition of tris(tert-butoxy)silanol onto the carbon/Al2O3-primed CNT forests. (iii) Faithful reproduction of the features in the masks used to microfabricate the TLC plates (M-TLC) this advance springs from the previous two points. (iv) A bonded (amino) phase on a CNT-templated microfabricated TLC plate. (v) Fast, highly efficient (125,000 - 225,000 N/m) separations of fluorescent dyes on M-TLC plates. (vi) Extensive characterization of our new materials by TEM, SEM, EDAX, DRIFT, and XPS. (vii) A substantially lower process temperature for the

  6. Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2

    NASA Astrophysics Data System (ADS)

    Timm, R.; Fian, A.; Hjort, M.; Thelander, C.; Lind, E.; Andersen, J. N.; Wernersson, L.-E.; Mikkelsen, A.

    2010-09-01

    Thin high-κ oxide films on InAs, formed by atomic layer deposition, are the key to achieve high-speed metal-oxide-semiconductor devices. We have studied the native oxide and the interface between InAs and 2 nm thick Al2O3 or HfO2 layers using synchrotron x-ray photoemission spectroscopy. Both films lead to a strong oxide reduction, obtaining less than 10% of the native As-oxides and between 10% and 50% of the native In-oxides, depending on the deposition temperature. The ratio of native In- to As-oxides is determined to be 2:1. The exact composition and the influence of different oxidation states and suboxides is discussed in detail.

  7. Laser induced damage threshold and optical properties of TiO2 and Al2O3 coatings prepared by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Jensen, Lars O.; Mädebach, Heinrich; Maula, Jarmo; Gürtler, Karlheinz; Ristau, Detlev

    2012-11-01

    Atomic Layer Deposition (ALD) allows for the deposition of homogeneous and conformal coatings with superior microstructural properties and well controllable thickness. As a consequence, ALD-processes have moved into the focus of optical thin film research during the last decade. In contrast to this, only a relatively small number of investigations in the power handling capability of ALD-coatings have been reported until now. The present contribution summarizes results of a study dedicated to the optical properties of single layers and high reflecting coating systems of TiO2 and Al2O3 deposited by ALD. Besides Laser Induced Damage Threshold (LIDT) values, the spectral characteristics as well the absorption and scatter losses are discussed.

  8. Reduction of native oxides on GaAs during atomic layer growth of Al2O3

    NASA Astrophysics Data System (ADS)

    Lee, Hang Dong; Feng, Tian; Yu, Lei; Mastrogiovanni, Daniel; Wan, Alan; Gustafsson, Torgny; Garfunkel, Eric

    2009-06-01

    The reduction of surface "native" oxides from GaAs substrates following reactions with trimethylaluminum (TMA) precursor is studied using medium energy ion scattering spectroscopy (MEIS) and x-ray photoelectron spectroscopy (XPS). MEIS measurements after one single TMA pulse show that ˜65% of the native oxide is reduced, confirmed by XPS measurement, and a 5 Å thick oxygen-rich aluminum oxide layer is formed. This reduction occurs upon TMA exposure to as-received GaAs wafers.

  9. Reduction and desorption of native oxides on GaAs and Ge during atomic layer deposition of Al2O3

    NASA Astrophysics Data System (ADS)

    Lee, Hang Dong; Feng, Tian; Yu, Lei; Mastrogiovanni, Daniel; Wan, Alan; Gustafsson, Torgny; Garfunkel, Eric

    2010-03-01

    The reduction of native oxides and control of interfacial defects is of central importance if materials such as GaAs and Ge are to be used for post-Si CMOS. We and others have earlier observed that under certain conditions such oxides are removed during atomic layer deposition (ALD) growth. We find, using medium energy ion scattering spectroscopy (MEIS) and XPS, that after just a single ALD half cycle (exposure to a trimethylaluminum (TMA) precursor) ˜65% of the native oxide is removed and a 5 å oxygen-rich aluminum oxide is formed. The source for the oxygen in the aluminum oxide is therefore the native oxide. For Ge substrates, one single TMA pulse removes a substantial amount of the native oxides and a 3å Al2O3 film is grown. The native oxides are also completely removed after > 450 C preheating of the substrate. The mechanisms for these processes will be discussed.

  10. Distribution of Oxygen Vacancies and Gadolinium Dopants in ZrO2-CeO2 Multi-Layer Films Grown on α-Al2O3

    SciTech Connect

    Wang, Chong M.; Engelhard, Mark H.; Azad, Samina; Saraf, Laxmikant V.; McCready, David E.; Shutthanandan, V.; Yu, Zhongqing; Thevuthasan, Suntharampillai; Watanabe, M.; Williams, D. B.

    2006-06-15

    Gd-doped ZrO2 and CeO2 multi-layer films were deposited on α-Al2O3 (0001) using oxygen plasma assisted molecular beam epitaxy. Oxygen vacancies and Gd dopant distributions were investigated in these multi-layer films using x-ray diffraction (XRD), conventional and high-resolution transmission electron microscopy (HRTEM), annular dark-filed imaging in scanning transmission electron microscopy (STEM), energy dispersive x-ray spectroscopy (EDS) elemental mapping and x-ray photoelectron spectroscopy (XPS) depth profiling. EDS and XPS reveal that Gd concentration in the ZrO2 layer is lower than that in the CeO2 layer. As a result, higher oxygen vacancy concentration exists in CeO2 layers compared to that in ZrO2 layers. In addition, Gd is found to segregate only at the interfaces formed during the deposition of CeO2 layers on ZrO2 layers. On the other hand, the interfaces formed during the deposition of ZrO2 layers on CeO2 layers did not show any Gd segregation. The Gd segregation behavior at the every other interface is believed to be associated with the low solubility of Gd in ZrO2.

  11. Simultaneous protection of organic p- and n-channels in complementary inverter from aging and bias-stress by DNA-base guanine/Al2O3 double layer.

    PubMed

    Lee, Junyeong; Hwang, Hyuncheol; Min, Sung-Wook; Shin, Jae Min; Kim, Jin Sung; Jeon, Pyo Jin; Lee, Hee Sung; Im, Seongil

    2015-01-28

    Although organic field-effect transistors (OFETs) have various advantages of lightweight, low-cost, mechanical flexibility, and nowadays even higher mobility than amorphous Si-based FET, stability issue under bias and ambient condition critically hinder its practical application. One of the most detrimental effects on organic layer comes from penetrated atmospheric species such as oxygen and water. To solve such degradation problems, several molecular engineering tactics are introduced: forming a kinetic barrier, lowering the level of molecule orbitals, and increasing the band gap. However, direct passivation of organic channels, the most promising strategy, has not been reported as often as other methods. Here, we resolved the ambient stability issues of p-type (heptazole)/or n-type (PTCDI-C13) OFETs and their bias-stability issues at once, using DNA-base small molecule guanine (C5H5N5O)/Al2O3 bilayer. The guanine protects the organic channels as buffer/and H getter layer between the channels and capping Al2O3, whereas the oxide capping resists ambient molecules. As a result, both p-type and n-type OFETs are simultaneously protected from gate-bias stress and 30 days-long ambient aging, finally demonstrating a highly stable, high-gain complementary-type logic inverter.

  12. The role of the spray pyrolysed Al2O3 barrier layer in achieving high efficiency solar cells on flexible steel substrates

    NASA Astrophysics Data System (ADS)

    Gledhill, Sophie E.; Zykov, Anton; Rissom, Thorsten; Caballero, Raquel; Kaufmann, Christian A.; Fischer, Christian-Herbert; Lux-Steiner, Martha; Efimova, Varvara; Hoffmann, Volker; Oswald, Steffen

    2011-07-01

    Thin film chalcopyrite solar cells grown on light-weight, flexible steel substrates are poised to enter the photovoltaic market. To guarantee good solar cell performance, the diffusion of iron from the steel into the CIGSe absorber material must be hindered during layer deposition. A barrier layer is thus required to isolate the solar module from the metal substrate, both electronically and chemically. Ideally the barrier layer would be deposited by a cheap roll-to-roll process suitable to coat flexible steel substrates. Aluminium oxide deposited by spray pyrolysis matches the criteria. The coating is homogeneous over rough substrates allowing comparatively thin barrier layers to be utilized. In this article, solar cell results are presented contrasting the device performance made with a barrier layer to that without a barrier layer. Secondary Ion Mass spectrometry (SIMS) measurements show that the spray pyrolysed barrier layer diminishes iron diffusion to the chalcopyrite absorber layer. The role of sodium, imperative for the growth of high efficiency chalcopyrite solar cells, and how it interacts with Al2O3 is discussed.

  13. Atomic layer deposition of TiO2 and Al2O3 on nanographite films: structure and field emission properties

    NASA Astrophysics Data System (ADS)

    Kleshch, Victor I.; Ismagilov, Rinat R.; Smolnikova, Elena A.; Obraztsova, Ekaterina A.; Tuyakova, Feruza; Obraztsov, Alexander N.

    2016-03-01

    Atomic layer deposition (ALD) of metal oxides (MO) was used to modify the properties of nanographite (NG) films produced by direct current plasma-enhanced chemical vapor deposition technique. NG films consist of a few layers of graphene flakes (nanowalls) and nanoscrolls homogeneously distributed over a silicon substrate with a predominantly vertical orientation of graphene sheets to the substrate surface. TiO2 and Al2O3 layers, with thicknesses in the range of 50 to 250 nm, were deposited on NG films by ALD. The obtained NG-MO composite materials were characterized by scanning electron microscopy, energy dispersive x-ray analysis, and Raman spectroscopy. It was found that ALD forms a uniform coating on graphene flakes, while on the surface of needle-like nanoscrolls it forms spherical nanoparticles. Field emission properties of the films were measured in a flat vacuum diode configuration. Analysis based on obtained current-voltage characteristics and electrostatic calculations show that emission from NG-TiO2 films is determined by the nanoscrolls protruding from the TiO2 coverage. The TiO2 layers with thicknesses of <200 nm almost do not affect the overall field emission characteristics of the films. At the same time, these layers are able to stabilize the NG films' surface and can lead to an improvement of the NG cold cathode performance in vacuum electronics.

  14. Electrical characteristics and conduction mechanisms of amorphous subnanometric Al2O3-TiO2 laminate dielectrics deposited by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Kahouli, Abdelkader; Lebedev, Oleg; Dao, Vu Hung; Elbahri, Marwa Ben; Prellier, Wilfrid; Lüders, Ulrike

    2016-11-01

    Electric conduction mechanisms of amorphous Al2O3/TiO2 (ATO)-laminates deposited by atomic layer deposition with sub-nanometer individual layer thicknesses were studied in a large temperature range. Two characteristic field regions are identified. In the low field region (E ≤ 0.31 MV/cm), the leakage current is dominated by the trap-assisted tunneling through oxygen vacancies occurring in the TiO2, while in the high electric field region (E > 0.31 MV/cm) the Poole Frenkel (PF) hopping is the appropriate conduction process with energy levels depending on the temperature and the electric field. It is shown that the PF potential levels decrease with the applied ATO field due to the overlapping of the Coulomb potential. Amorphous ATO-laminates show the presence of two intrinsic potential energy levels ϕi, which are 0.18 eV for low temperature region and 0.4 eV at high temperature region. Oxygen vacancies are the main origin of traps, which is consistent with the principal mechanisms for leakage in ATO-laminates.

  15. Use of Al2O3 layers for higher laser damage threshold at 22.5° incidence, S polarization of a 527 nm/1054 nm dichroic coating

    NASA Astrophysics Data System (ADS)

    Bellum, John C.; Field, Ella S.; Kletecka, Damon E.; Rambo, Patrick K.; Smith, Ian C.

    2016-12-01

    We have designed and reported on a dichroic beam combiner coating consisting of HfO2/SiO2 layer pairs to provide high transmission at 527 nm and high reflection at 1054 nm for 22.5° angle of incidence (AOI) in S polarization (Spol). The laser-induced damage threshold (LIDT) of this first coating at the use AOI and polarization with 3.5 nanosecond (ns) pulses at 532 nm is 7 J/cm2, and only marginally adequate for our beam combining application. In this paper, we describe the use of a combination of Al2O3 and HfO2 high index layers to modify the first as well as a second dichroic coating in two different ways, which results in a higher LIDT of 10 J/cm2 for 3.5 ns pulses at 532 nm and 22.5° AOI, Spol for the second dichroic coating, and in the same 7 J/cm2 LIDT for the first dichroic coating.

  16. Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer

    PubMed Central

    Silva, J. P. B.; Faita, F. L.; Kamakshi, K.; Sekhar, K. C.; Moreira, J. Agostinho; Almeida, A.; Pereira, M.; Pasa, A. A.; Gomes, M. J. M.

    2017-01-01

    An enhanced resistive switching (RS) effect is observed in Pt/BaTiO3(BTO)/ITO ferroelectric structures when a thin HfO2:Al2O3 (HAO) dielectric layer is inserted between Pt and BTO. The P-E hysteresis loops reveal the ferroelectric nature of both Pt/BTO/ITO and Pt/HAO/BTO/ITO structures. The relation between the RS and the polarization reversal is investigated at various temperatures in the Pt/HAO/BTO/ITO structure. It is found that the polarization reversal induces a barrier variation in the Pt/HAO/BTO interface and causes enhanced RS, which is suppressed at Curie temperature (Tc = 140 °C). Furthermore, the Pt/HAO/BTO/ITO structures show promising endurance characteristics, with a RS ratio >103 after 109 switching cycles, that make them potential candidates for resistive switching memory devices. By combining ferroelectric and dielectric layers this work provides an efficient way for developing highly efficient ferroelectric-based RS memory devices.

  17. Characterization of ZrO2 buffer layers for sequentially evaporated Y-Ba-CuO on Si and Al2O3 substrates

    NASA Technical Reports Server (NTRS)

    Valco, George J.; Rohrer, Norman J.; Pouch, John J.; Warner, Joseph D.; Bhasin, Kul B.

    1988-01-01

    Thin film high temperature superconductors have the potential to change the microwave technology for space communications systems. For such applications it is desirable that the films be formed on substrates such as Al2O3 which have good microwave properties. The use of ZrO2 buffer layers between Y-Ba-Cu-O and the substrate has been investigated. These superconducting films have been formed by multilayer sequential electron beam evaporation of Cu, BaF2 and Y with subsequent annealing. The three layer sequence of Y/BaF2/Cu is repeated four times for a total of twelve layers. Such a multilayer film, approximately 1 micron thick, deposited directly on SrTiO3 and annealed at 900 C for 45 min produces a film with a superconducting onset of 93 K and critical temperature of 85 K. Auger electron spectroscopy in conjunction with argon ion sputtering was used to obtain the distribution of each element as a function of depth for an unannealed film, the annealed film on SrTiO3 and annealed films on ZrO2 buffer layers. The individual layers were apparent. After annealing, the bulk of the film on SrTiO3 is observed to be fairly uniform while films on the substrates with buffer layers are less uniform. The Y-Ba-Cu-O/ZrO2 interface is broad with a long Ba tail into the ZrO2, suggesting interaction between the film and the buffer layer. The underlying ZrO2/Si interface is sharper. The detailed Auger results are presented and compared with samples annealed at different temperatures and durations.

  18. Nonlinear convective analysis of a rotating Oldroyd-B nanofluid layer under thermal non-equilibrium utilizing Al2O3-EG colloidal suspension

    NASA Astrophysics Data System (ADS)

    Agarwal, Shilpi; Rana, Puneet

    2016-04-01

    In this paper, we examine a layer of Oldroyd-B nanofluid for linear and nonlinear regimes under local thermal non-equilibrium conditions for the classical Rayleigh-Bénard problem. The free-free boundary condition has been implemented with the flux for nanoparticle concentration being zero at edges. The Oberbeck-Boussinesq approximation holds good and for the rotational effect Coriolis term is included in the momentum equation. A two-temperature model explains the effect of local thermal non-equilibrium among the particle and fluid phases. The criteria for onset of stationary convection has been derived as a function of the non-dimensionalized parameters involved including the Taylor number. The assumed boundary conditions negate the possibility of overstability due to the absence of opposing forces responsible for it. The thermal Nusselt number has been obtained utilizing a weak nonlinear theory in terms of various pertinent parameters in the steady and transient mode, and has been depicted graphically. The main findings signify that the rotation has a stabilizing effect on the system. The stress relaxation parameter λ_1 inhibits whereas the strain retardation parameter λ_2 exhibits heat transfer utilizing Al2O3 nanofluids.

  19. Annealing study of H2O and O3 grown Al2O3 deposited by atomic layer chemical vapour deposition on n-type 4H-SiC

    NASA Astrophysics Data System (ADS)

    Avice, Marc; Grossner, Ulrike; Nilsen, Ola; Christensen, Jens S.; Fjellvåg, Helmer; Svensson, Bengt G.

    2006-09-01

    Al2O3 has been grown by atomic layer chemical vapour deposition on HF cleaned n-type 4H-SiC using either H2O or O3 as an oxidant. After post-deposition annealing at high temperature (1000°C) in argon atmosphere for different durations (1, 2 and 3 h), bulk and interface properties of the films were studied by capacitance-voltage (CV), current-voltage (IV) and secondary ion mass spectrometry (SIMS) measurements. Electrical measurements show a decreasing shift of the flatband voltage indicating a diminution of the negative oxide charges with increasing annealing time. The SIMS measurements reveal accumulation of boron, sodium and potassium at the Al2O3/SiC interface but the accumulation decreases with annealing at 1000°C where also out diffusion of silicon into the Al2O3 film takes place.

  20. Processing of n+/p-/p+ strip detectors with atomic layer deposition (ALD) grown Al2O3 field insulator on magnetic Czochralski silicon (MCz-si) substrates

    NASA Astrophysics Data System (ADS)

    Härkönen, J.; Tuovinen, E.; Luukka, P.; Gädda, A.; Mäenpää, T.; Tuominen, E.; Arsenovich, T.; Junkes, A.; Wu, X.; Li, Z.

    2016-08-01

    Detectors manufactured on p-type silicon material are known to have significant advantages in very harsh radiation environment over n-type detectors, traditionally used in High Energy Physics experiments for particle tracking. In p-type (n+ segmentation on p substrate) position-sensitive strip detectors, however, the fixed oxide charge in the silicon dioxide is positive and, thus, causes electron accumulation at the Si/SiO2 interface. As a result, unless appropriate interstrip isolation is applied, the n-type strips are short-circuited. Widely adopted methods to terminate surface electron accumulation are segmented p-stop or p-spray field implantations. A different approach to overcome the near-surface electron accumulation at the interface of silicon dioxide and p-type silicon is to deposit a thin film field insulator with negative oxide charge. We have processed silicon strip detectors on p-type Magnetic Czochralski silicon (MCz-Si) substrates with aluminum oxide (Al2O3) thin film insulator, grown with Atomic Layer Deposition (ALD) method. The electrical characterization by current-voltage and capacitance-voltage measurement shows reliable performance of the aluminum oxide. The final proof of concept was obtained at the test beam with 200 GeV/c muons. For the non-irradiated detector the charge collection efficiency (CCE) was nearly 100% with a signal-to-noise ratio (S/N) of about 40, whereas for the 2×1015 neq/cm2 proton irradiated detector the CCE was 35%, when the sensor was biased at 500 V. These results are comparable with the results from p-type detectors with the p-spray and p-stop interstrip isolation techniques. In addition, interestingly, when the aluminum oxide was irradiated with Co-60 gamma-rays, an accumulation of negative fixed oxide charge in the oxide was observed.

  1. Reduced impurities and improved electrical properties of atomic-layer-deposited HfO2 film grown at a low temperature (100 °C) by Al2O3 incorporation

    NASA Astrophysics Data System (ADS)

    Park, Tae Joo; Byun, Youngchol; Wallace, Robert M.; Kim, Jiyoung

    2016-05-01

    The HfO2 films grown by atomic layer deposition (ALD) at a low temperature (100 °C) necessarily has a large amount of residual impurities due to lack of thermal energy for stable ALD reactions such as ligand removal and oxidation, which degrades various properties. However, Al2O3 incorporation into the film significantly decreased the residual impurities despite of a low growth temperature. The decrease in C impurity is attributed to the reduced oxygen vacancies by the incorporated Al2O3 phase or the high reactivity of Al precursor. Consequently, the electronic band structure of the film, and thereby the electrical properties were improved significantly.

  2. O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors

    NASA Astrophysics Data System (ADS)

    Huang, Sen; Liu, Xinyu; Wei, Ke; Liu, Guoguo; Wang, Xinhua; Sun, Bing; Yang, Xuelin; Shen, Bo; Liu, Cheng; Liu, Shenghou; Hua, Mengyuan; Yang, Shu; Chen, Kevin J.

    2015-01-01

    High quality Al2O3 film grown by atomic layer deposition (ALD), with ozone (O3) as oxygen source, is demonstrated for fabrication of normally-off AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). Significant suppression of Al-O-H and Al-Al bonds in ALD-Al2O3 has been realized by substituting conventional H2O source with O3. A high dielectric breakdown E-field of 8.5 MV/cm and good TDDB behavior are achieved in a gate dielectric stack consisting of 13-nm O3-Al2O3 and 2-nm H2O-Al2O3 interfacial layer on recessed GaN. By using this 15-nm gate dielectric and a high-temperature gate-recess technique, the density of positive bulk/interface charges in normally-off AlGaN/GaN MIS-HEMTs is remarkably suppressed to as low as 0.9 × 1012 cm-2, contributing to the realization of normally-off operation with a high threshold voltage of +1.6 V and a low specific ON-resistance RON,sp of 0.49 mΩ cm2.

  3. Ni-based anode-supported Al2O3-doped-Y2O3-stabilized ZrO2 thin electrolyte solid oxide fuel cells with Y2O3-stabilized ZrO2 buffer layer

    NASA Astrophysics Data System (ADS)

    Lei, Libin; Bai, Yaohui; Liu, Jiang

    2014-02-01

    In order to reduce the sintering temperature of Ni-based anode-supported thin 8 mol% yttria-stabilized zirconia (YSZ) elsectrolyte solid oxide fuel cells (SOFCs), alumina, with a weight percent of 1, 3, 5, and 7, is respectively doped into YSZ as sintering aid. A pure YSZ buffer layer is introduced between the Al2O3-doped-YSZ electrolyte and Ni-YSZ anode, to prevent Al2O3 and NiO from forming non-conductive spinel NiAl2O4. The experimental results show that doping proper amount of Al2O3 doping can reduce the sintering temperature of YSZ, e.g., 1 wt.% doping decreases the temperature from 1673 K to 1573 K. Anode-supported SOFCs are prepared with Al2O3-doped-YSZ electrolytes sintered at different temperatures. Electrochemical characterization of the SOFCs shows that the single cell with 1 wt.% alumina-doped YSZ electrolyte sintered at 1573 K gives the highest output. The effect of alumina doping on sintering behavior and electrical performance of YSZ is discussed in detail.

  4. Leakage Current Mechanism of InN-Based Metal-Insulator-Semiconductor Structures with Al2O3 as Dielectric Layers

    NASA Astrophysics Data System (ADS)

    Wang, X.; Zhang, G. Z.; Xu, Y.; Gan, X. W.; Chen, C.; Wang, Z.; Wang, Y.; Wang, J. L.; Wang, T.; Wu, H.; Liu, C.

    2016-01-01

    InN-based metal-insulator-semiconductor (MIS) structures were prepared with Al2O3 as the gate oxides. Surface morphologies of InN films are improved with increasing Mg doping concentrations. At high frequencies, the measured capacitance densities deviate from the real ones with turning frequencies inversely proportional to series resistances. An ultralow leakage current density of 1.35 × 10-9 A/cm2 at 1 V is obtained. Fowler-Nordheim tunneling is the main mechanism of the leakage current at high fields, while Schottky emission dominates at low fields. Capacitance densities shift with different biases, indicating that the InN-based MIS structures can serve as potential candidates for MIS field-effect transistors.

  5. Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates

    NASA Astrophysics Data System (ADS)

    Kaneki, Shota; Ohira, Joji; Toiya, Shota; Yatabe, Zenji; Asubar, Joel T.; Hashizume, Tamotsu

    2016-10-01

    Interface characterization was carried out on Al2O3/GaN structures using epitaxial n-GaN layers grown on free-standing GaN substrates with relatively low dislocation density (<3 × 106 cm-2). The Al2O3 layer was prepared by atomic layer deposition. The as-deposited metal-oxide-semiconductor (MOS) sample showed a significant frequency dispersion and a bump-like feature in capacitance-voltage (C-V) curves at reverse bias, showing high-density interface states in the range of 1012 cm-1 eV-1. On the other hand, excellent C-V characteristics with negligible frequency dispersion were observed from the MOS sample after annealing under a reverse bias at 300 °C in air for 3 h. The reverse-bias-annealed sample showed state densities less than 1 × 1011 cm-1 eV-1 and small shifts of flat-band voltage. In addition, the C-V curve measured at 200 °C remained essentially similar compared with the room-temperature C-V curves. These results indicate that the present process realizes a stable Al2O3/GaN interface with low interface state densities.

  6. Free standing TiO2 nanotube array electrodes with an ultra-thin Al2O3 barrier layer and TiCl4 surface modification for highly efficient dye sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Gao, Xianfeng; Guan, Dongsheng; Huo, Jingwan; Chen, Junhong; Yuan, Chris

    2013-10-01

    Dye sensitized solar cells were fabricated with free standing TiO2 nanotube (TNT) array films, which were prepared by template assisted atomic layer deposition (ALD) with precise wall thickness control. Efforts to improve the photovoltaic performance were made by using Al2O3 barrier layer coating in conjunction with TiCl4 surface modification. An Al2O3 thin layer was deposited on the TNT electrode by ALD to serve as the charge recombination barrier, but it suffers from the drawback of decreasing the photoelectron injection from dye into TiO2 when the barrier layer became too thick. With the TiCl4 treatment in combination with optimal thickness coating, this problem could be avoided. The co-surface treated electrode presents superior surface property with low recombination rate and good electron transport property. A high conversion efficiency of 8.62% is obtained, which is about 1.8 times that of the device without surface modifications.Dye sensitized solar cells were fabricated with free standing TiO2 nanotube (TNT) array films, which were prepared by template assisted atomic layer deposition (ALD) with precise wall thickness control. Efforts to improve the photovoltaic performance were made by using Al2O3 barrier layer coating in conjunction with TiCl4 surface modification. An Al2O3 thin layer was deposited on the TNT electrode by ALD to serve as the charge recombination barrier, but it suffers from the drawback of decreasing the photoelectron injection from dye into TiO2 when the barrier layer became too thick. With the TiCl4 treatment in combination with optimal thickness coating, this problem could be avoided. The co-surface treated electrode presents superior surface property with low recombination rate and good electron transport property. A high conversion efficiency of 8.62% is obtained, which is about 1.8 times that of the device without surface modifications. Electronic supplementary information (ESI) available: UV-Vis spectra of desorbed N719 dyes from

  7. Atomic layer deposition of high-density Pt nanodots on Al2O3 film using (MeCp)Pt(Me)3 and O2 precursors for nonvolatile memory applications

    PubMed Central

    2013-01-01

    Pt nanodots have been grown on Al2O3 film via atomic layer deposition (ALD) using (MeCp)Pt(Me)3 and O2 precursors. Influence of the substrate temperature, pulse time of (MeCp)Pt(Me)3, and deposition cycles on ALD Pt has been studied comprehensively by scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy. Therefore, Pt nanodots with a high density of approximately 2 × 1012 cm-2 have been achieved under optimized conditions: 300°C substrate temperature, 1 s pulse time of (MeCp)Pt(Me)3, and 70 deposition cycles. Further, metal-oxide-semiconductor capacitors with Pt nanodots embedded in ALD Al2O3 dielectric have been fabricated and characterized electrically, indicating noticeable electron trapping capacity, efficient programmable and erasable characteristics, and good charge retention. PMID:23413837

  8. Enhanced Performance of GaN-Based Light-Emitting Diodes by Using Al Mirror and Atomic Layer Deposition-TiO2/Al2O3 Distributed Bragg Reflector Backside Reflector with Patterned Sapphire Substrate

    NASA Astrophysics Data System (ADS)

    Chen, Hongjun; Guo, Hao; Zhang, Peiyuan; Zhang, Xiong; Liu, Honggang; Wang, Shengkai; Cui, Yiping

    2013-02-01

    GaN-based light-emitting diodes (LEDs) coated with an Al mirror and a three-pair TiO2/Al2O3 distributed Bragg reflector (DBR) by atomic layer deposition (ALD) grown on a patterned sapphire substrate (PSS) were proposed and realized for the first time. A 43.1% enhancement in light output power (LOP) was realized at 60 mA with the LED coated with an Al mirror and a three-pair ALD-grown TiO2/Al2O3 DBR compared with the LED without a backside reflector, as well as a 10.7% enhancement compared with the LED with a conventional Al mirror and a three-pair TiO2/SiO2 DBR reflector.

  9. Mechanism of interfacial layer suppression after performing surface Al(CH3)3 pretreatment during atomic layer deposition of Al2O3

    NASA Astrophysics Data System (ADS)

    Xu, Min; Zhang, Chi; Ding, Shi-Jin; Lu, Hong-Liang; Chen, Wei; Sun, Qing-Qing; Zhang, David Wei; Wang, Li-Kang

    2006-11-01

    During atomic layer deposition of high permittivity (high-k) metal oxide gate dielectrics, an interfacial layer (IL) containing SiOx between high-k dielectric and Si substrate is almost unavoidable. However, an Al(CH3)3 (TMA) pretreatment for 3600s on H-terminated silicon surface can effectively reduce the interfacial layer from 1.7to0.5nm during atomic layer deposition of aluminum oxide. Interestingly, the surface TMA pretreatment increases the thickness of the initial IL during atomic layer deposition, but it greatly suppresses the final IL after 35 growth cycles. A reasonable mechanism is proposed based on the steric hindrance effect cofunctioning with the interfacial Al catalyzing effect.

  10. Influence of annealing in H atmosphere on the electrical properties of Al2O3 layers grown on p-type Si by the atomic layer deposition technique

    NASA Astrophysics Data System (ADS)

    Kolkovsky, Vl.; Stübner, R.; Langa, S.; Wende, U.; Kaiser, B.; Conrad, H.; Schenk, H.

    2016-09-01

    In the present study the electrical properties of 100 nm and 400 nm alumina films grown by the atomic layer deposition technique on p-type Si before and after a post-deposition annealing at 440 °C and after a dc H plasma treatment at different temperatures are investigated. We show that the density of interface states is below 2 × 1010 cm-2 in these samples and this value is significantly lower compared to that reported previously in thinner alumina layers (below 50 nm). The effective minority carrier lifetime τg,eff and the effective surface recombination velocity seff in untreated p-type Si samples with 100 nm and 400 nm aluminum oxide is comparable with those obtained after thermal oxidation of 90 nm SiO2. Both, a post-deposition annealing in forming gas (nitrogen/hydrogen) at elevated temperatures and a dc H-plasma treatment at temperatures close to room temperature lead to the introduction of negatively charged defects in alumina films. The results obtained in samples annealed in different atmospheres at different temperatures or subjected to a dc H plasma treatment allow us to correlate these centers with H-related defects. By comparing with theory we tentatively assign them to negatively charged interstitial H atoms.

  11. Free standing TiO2 nanotube array electrodes with an ultra-thin Al2O3 barrier layer and TiCl4 surface modification for highly efficient dye sensitized solar cells.

    PubMed

    Gao, Xianfeng; Guan, Dongsheng; Huo, Jingwan; Chen, Junhong; Yuan, Chris

    2013-11-07

    Dye sensitized solar cells were fabricated with free standing TiO2 nanotube (TNT) array films, which were prepared by template assisted atomic layer deposition (ALD) with precise wall thickness control. Efforts to improve the photovoltaic performance were made by using Al2O3 barrier layer coating in conjunction with TiCl4 surface modification. An Al2O3 thin layer was deposited on the TNT electrode by ALD to serve as the charge recombination barrier, but it suffers from the drawback of decreasing the photoelectron injection from dye into TiO2 when the barrier layer became too thick. With the TiCl4 treatment in combination with optimal thickness coating, this problem could be avoided. The co-surface treated electrode presents superior surface property with low recombination rate and good electron transport property. A high conversion efficiency of 8.62% is obtained, which is about 1.8 times that of the device without surface modifications.

  12. Influence of topography and Co domain walls on the magnetization reversal of the FeNi layer in FeNi/Al2O3/Co magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Romanens, F.; Vogel, J.; Kuch, W.; Fukumoto, K.; Camarero, J.; Pizzini, S.; Bonfim, M.; Petroff, F.

    2006-11-01

    We have studied the magnetization reversal dynamics of FeNi/Al2O3/Co magnetic tunnel junctions deposited on step-bunched Si substrates using magneto-optical Kerr effect and time-resolved x-ray photoelectron emission microscopy combined with x-ray magnetic circular dichroism (XMCD-PEEM). Different reversal mechanisms have been found depending on the substrate miscut angle. Larger terraces (smaller miscut angles) lead to a higher nucleation density and stronger domain wall pinning. The width of domain walls with respect to the size of the terraces seems to play an important role in the reversal. We used the element selectivity of XMCD-PEEM to reveal the strong influence of the stray field of domain walls in the hard magnetic layer on the magnetic switching of the soft magnetic layer.

  13. The impact of ultrathin Al2O3 films on the electrical response of p-Ge/Al2O3/HfO2/Au MOS structures

    NASA Astrophysics Data System (ADS)

    Botzakaki, M. A.; Skoulatakis, G.; Kennou, S.; Ladas, S.; Tsamis, C.; Georga, S. N.; Krontiras, C. A.

    2016-09-01

    It is well known that the most critical issue in Ge CMOS technology is the successful growth of high-k gate dielectrics on Ge substrates. The high interface quality of Ge/high-k dielectric is connected with advanced electrical responses of Ge based MOS devices. Following this trend, atomic layer deposition deposited ultrathin Al2O3 and HfO2 films were grown on p-Ge. Al2O3 acts as a passivation layer between p-Ge and high-k HfO2 films. An extensive set of p-Ge/Al2O3/HfO2 structures were fabricated with Al2O3 thickness ranging from 0.5 nm to 1.5 nm and HfO2 thickness varying from 2.0 nm to 3.0 nm. All structures were characterized by x-ray photoelectron spectroscopy (XPS) and AFM. XPS analysis revealed the stoichiometric growth of both films in the absence of Ge sub-oxides between p-Ge and Al2O3 films. AFM analysis revealed the growth of smooth and cohesive films, which exhibited minimal roughness (~0.2 nm) comparable to that of clean bare p-Ge surfaces. The electrical response of all structures was analyzed by C-V, G-V, C-f, G-f and J-V characteristics, from 80 K to 300 K. It is found that the incorporation of ultrathin Al2O3 passivation layers between p-Ge and HfO2 films leads to superior electrical responses of the structures. All structures exhibit well defined C-V curves with parasitic effects, gradually diminishing and becoming absent below 170 K. D it values were calculated at each temperature, using both Hill-Coleman and Conductance methods. Structures of p-Ge/0.5 nm Al2O3/2.0 nm HfO2/Au, with an equivalent oxide thickness (EOT) equal to 1.3 nm, exhibit D it values as low as ~7.4  ×  1010 eV-1 cm-2. To our knowledge, these values are among the lowest reported. J-V measurements reveal leakage currents in the order of 10-1 A cm-2, which are comparable to previously published results for structures with the same EOT. A complete mapping of the energy distribution of D its into the energy bandgap of p-Ge, from the valence band

  14. SELF ALIGNED TIP DEINSULATION OF ATOMIC LAYER DEPOSITED AL2O3 AND PARYLENE C COATED UTAH ELECTRODE ARRAY BASED NEURAL INTERFACES

    PubMed Central

    Xie, Xianzong; Rieth, Loren; Negi, Sandeep; Bhandari, Rajmohan; Caldwell, Ryan; Sharma, Rohit; Tathireddy, Prashant; Solzbacher, Florian

    2014-01-01

    The recently developed alumina and Parylene C bi-layer encapsulation improved the lifetime of neural interfaces. Tip deinsulation of Utah electrode array based neural interfaces is challenging due to the complex 3D geometries and high aspect ratios of the devices. A three-step self-aligned process was developed for tip deinsulation of bilayer encapsulated arrays. The deinsulation process utilizes laser ablation to remove Parylene C, O2 reactive ion etching to remove carbon and Parylene residues, and buffered oxide etch to remove alumina deposited by atomic layer deposition, and expose the IrOx tip metallization. The deinsulated iridium oxide area was characterized by scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, and electrochemical impedance spectroscopy to determine the morphology, surface morphology, composition, and electrical properties of the deposited layers and deinsulated tips. The alumina layer was found to prevent the formation of micro cracks on iridium oxide during the laser ablation process, which has been previously reported as a challenge for laser deinsulation of Parylene films. The charge injection capacity, charge storage capacity, and impedance of deinsulated iridium oxide were characterized to determine the deinsulation efficacy compared to Parylene-only insulation. Deinsulated iridium oxide with bilayer encapsulation had higher charge injection capacity (240 vs 320 nC) and similar electrochemical impedance (2.5 vs 2.5 kΩ) compared to deinsulated iridium oxide with only Parylene coating for an area of 2 × 10−4 cm2. Tip impedances were in the ranges of 20 to 50 kΩ, with median of 32 KΩ and standard deviation of 30 kΩ, showing the effectiveness of the self-aligned deinsulation process for alumina and Parylene C bi-layer encapsulation. The relatively uniform tip impedance values demonstrated the consistency of tip exposures. PMID:24771981

  15. Self-aligned tip deinsulation of atomic layer deposited Al2O3 and parylene C coated Utah electrode array based neural interfaces

    NASA Astrophysics Data System (ADS)

    Xie, Xianzong; Rieth, Loren; Negi, Sandeep; Bhandari, Rajmohan; Caldwell, Ryan; Sharma, Rohit; Tathireddy, Prashant; Solzbacher, Florian

    2014-03-01

    The recently developed alumina and parylene C bilayer encapsulation improved the lifetime of neural interfaces. Tip deinsulation of Utah electrode array based neural interfaces is challenging due to the complex 3D geometries and high aspect ratios of the devices. A three-step self-aligned process was developed for tip deinsulation of bilayer encapsulated arrays. The deinsulation process utilizes laser ablation to remove parylene C, O2 reactive ion etching to remove carbon and parylene residues, and buffered oxide etch to remove alumina deposited by atomic layer deposition, and expose the IrOx tip metallization. The deinsulated iridium oxide area was characterized by scanning electron microscopy, atomic force microscopy, x-ray photoelectron spectroscopy, and electrochemical impedance spectroscopy to determine the morphology, surface morphology, composition, and electrical properties of the deposited layers and deinsulated tips. The alumina layer was found to prevent the formation of micro cracks on iridium oxide during the laser ablation process, which has been previously reported as a challenge for laser deinsulation of parylene films. The charge injection capacity, charge storage capacity, and impedance of deinsulated iridium oxide were characterized to determine the deinsulation efficacy compared to parylene-only insulation. Deinsulated iridium oxide with bilayer encapsulation had higher charge injection capacity (240 versus 320 nC) and similar electrochemical impedance (2.5 versus 2.5 kΩ) compared to deinsulated iridium oxide with only parylene coating for an area of 2 × 10-4 cm2. Tip impedances were in the range of 20-50 kΩ, with a median of 32 kΩ and a standard deviation of 30 kΩ, showing the effectiveness of the self-aligned deinsulation process for alumina and parylene C bilayer encapsulation. The relatively uniform tip impedance values demonstrated the consistency of tip exposures.

  16. One-pot Solvothermal Synthesis of Well-ordered Layered Sodium Aluminoalcoholate Complex: A Useful Precursor for the Preparation of Porous Al2O3 Particles.

    PubMed

    Li, Xiansen; Michaelis, Vladimir K; Ong, Ta-Chung; Smith, Stacey J; McKay, Ian; Müller, Peter; Griffin, Robert G; Wang, Evelyn N

    2014-04-14

    One-pot solvothermal synthesis of a robust tetranuclear sodium hexakis(glycolato)tris(methanolato)aluminate complex Na3[Al4(OCH3)3(OCH2CH2O)6] via a modified yet rigorous base-catalyzed transesterification mechanism is presented here. Single crystal X-ray diffraction (SCXRD) studies indicate that this unique Al complex contains three penta-coordinate Al(3+) ions, each bound to two bidentate ethylene glycolate chelators and one monodentate methanolate ligand. The remaining fourth Al(3+) ion is octahedrally coordinated to one oxygen atom from each of the six surrounding glycolate chelators, effectively stitching the three penta-coordinate Al moieties together into a novel tetranuclear Al complex. This aluminate complex is periodically self-assembled into well-ordered layers normal to the [110] axis with the intra-/inter-layer bindings involving extensive ionic bonds from the three charge-counterbalancing Na(+) cations rather than the more typical hydrogen bonding interactions as a result of the fewer free hydroxyl groups present in its structure. It can also serve as a valuable precursor toward the facile synthesis of high-surface-area alumina powders using a very efficient rapid pyrolysis technique.

  17. One-pot solvothermal synthesis of a well-ordered layered sodium aluminoalcoholate complex: a useful precursor for the preparation of porous Al2O3 particles

    SciTech Connect

    Li, XS; Michaelis, VK; Ong, TC; Smith, SJ; McKay, I; Muller, P; Griffin, RG; Wang, EN

    2014-01-01

    One-pot solvothermal synthesis of a robust tetranuclear sodium hexakis(glycolato)tris(methanolato)aluminate complex Na-3[Al-4(OCH3)(3)(OCH2CH2O)(6)] via a modified yet rigorous base-catalyzed transesterification mechanism is presented here. Single crystal X-ray diffraction (SCXRD) studies indicate that this unique Al complex contains three pentacoordinate Al3+ ions, each bound to two bidentate ethylene glycolate chelators and one monodentate methanolate ligand. The remaining fourth Al3+ ion is octahedrally coordinated to one oxygen atom from each of the six surrounding glycolate chelators, effectively stitching the three pentacoordinate Al moieties together into a novel tetranuclear Al complex. This aluminate complex is periodically self-assembled into well-ordered layers normal to the [110] axis with the intra-/inter-layer bonding involving extensive ionic bonds from the three charge-counterbalancing Na+ cations rather than the more typical hydrogen bonding interactions as a result of fewer free hydroxyl groups present in its structure. It can also serve as a valuable precursor toward the facile synthesis of high-surface-area alumina powders using a very efficient rapid pyrolysis technique.

  18. One-pot Solvothermal Synthesis of Well-ordered Layered Sodium Aluminoalcoholate Complex: A Useful Precursor for the Preparation of Porous Al2O3 Particles†

    PubMed Central

    Li, Xiansen; Michaelis, Vladimir K.; Ong, Ta-Chung; Smith, Stacey J.; McKay, Ian; Müller, Peter; Griffin, Robert G.; Wang, Evelyn N.

    2014-01-01

    One-pot solvothermal synthesis of a robust tetranuclear sodium hexakis(glycolato)tris(methanolato)aluminate complex Na3[Al4(OCH3)3(OCH2CH2O)6] via a modified yet rigorous base-catalyzed transesterification mechanism is presented here. Single crystal X-ray diffraction (SCXRD) studies indicate that this unique Al complex contains three penta-coordinate Al3+ ions, each bound to two bidentate ethylene glycolate chelators and one monodentate methanolate ligand. The remaining fourth Al3+ ion is octahedrally coordinated to one oxygen atom from each of the six surrounding glycolate chelators, effectively stitching the three penta-coordinate Al moieties together into a novel tetranuclear Al complex. This aluminate complex is periodically self-assembled into well-ordered layers normal to the [110] axis with the intra-/inter-layer bindings involving extensive ionic bonds from the three charge-counterbalancing Na+ cations rather than the more typical hydrogen bonding interactions as a result of the fewer free hydroxyl groups present in its structure. It can also serve as a valuable precursor toward the facile synthesis of high-surface-area alumina powders using a very efficient rapid pyrolysis technique. PMID:24817826

  19. The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor

    NASA Astrophysics Data System (ADS)

    Trinh, H. D.; Chang, E. Y.; Wu, P. W.; Wong, Y. Y.; Chang, C. T.; Hsieh, Y. F.; Yu, C. C.; Nguyen, H. Q.; Lin, Y. C.; Lin, K. L.; Hudait, M. K.

    2010-07-01

    The inversion behaviors of atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors are studied by various surface treatments and postdeposition annealing using different gases. By using the combination of wet sulfide and dry trimethyl aluminum surface treatment along with pure hydrogen annealing, a strong inversion capacitance-voltage (C-V) response is observed, indicating a remarkable reduction in interface trap state density (Dit) at lower half-part of In0.53Ga0.47As band gap. This low Dit was confirmed by the temperature independent C-V stretch-out and horizontal C-V curves. The x-ray photoelectron spectroscopy spectra further confirm the effectiveness of hydrogen annealing on the reduction of native oxides.

  20. Comparison of ALD and IBS Al2O3 films for high power lasers

    NASA Astrophysics Data System (ADS)

    Liu, Hao; Jensen, Lars; Becker, Jürgen; Wurz, Marc Christopher; Ma, Ping; Ristau, Detlev

    2016-12-01

    Atomic layer deposition (ALD) has been widely studied in Micro-electronics due to its self-terminating property. ALD also grows film coatings with precise thickness and nodular-free structure, which are desirable properties for high power coatings. The depositing process was studied to produce uniform, stable and economic Al2O3 single layers. The layer properties relevant to high power laser industry were studied and compared with IBS Al2O3 single layers. ALD Al2O3 showed a stable growth of 0.104 nm/cycle, band gap energy of 6.5 eV and tensile stress of about 480 MPa. It also showed a low absorption at wavelength 1064 nm within several ppm, and LIDT above 30 J/cm2. These properties are superior to the reference IBS Al2O3 single layers and indicate a high versatility of ALD Al2O3 for high power coatings.

  1. Transparent and flexible capacitors based on nanolaminate Al2O3/TiO2/Al2O3.

    PubMed

    Zhang, Guozhen; Wu, Hao; Chen, Chao; Wang, Ti; Yue, Jin; Liu, Chang

    2015-01-01

    Transparent and flexible capacitors based on nanolaminate Al2O3/TiO2/Al2O3 dielectrics have been fabricated on indium tin oxide-coated polyethylene naphthalate substrates by atomic layer deposition. A capacitance density of 7.8 fF/μm(2) at 10 KHz was obtained, corresponding to a dielectric constant of 26.3. Moreover, a low leakage current density of 3.9 × 10(-8) A/cm(2) at 1 V has been realized. Bending test shows that the capacitors have better performances in concave conditions than in convex conditions. The capacitors exhibit an average optical transmittance of about 70% in visible range and thus open the door for applications in transparent and flexible integrated circuits.

  2. Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping

    PubMed Central

    2012-01-01

    Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic chemical vapor deposition method at 620°C to 650°C. The diffusion of Ge atoms into epi-GaAs resulted in auto-doping, and therefore, an n-MOS behavior was observed for undoped and Zn-doped epi-GaAs with the doping concentration up to approximately 1017 cm-3. This is attributed to the diffusion of a significant amount of Ge atoms from the Ge substrate as confirmed by the simulation using SILVACO software and also from the secondary ion mass spectrometry analyses. The Zn-doped epi-GaAs with a doping concentration of approximately 1018 cm-3 converts the epi-GaAs layer into p-type since the Zn doping is relatively higher than the out-diffused Ge concentration. The capacitance-voltage characteristics show similar frequency dispersion and leakage current for n-type and p-type epi-GaAs layers with very low hysteresis voltage (approximately 10 mV). PACS: 81.15.Gh. PMID:22297193

  3. High Temperature Mechanical Characterization and Analysis of Al2O3 /Al2O3 Composition

    NASA Technical Reports Server (NTRS)

    Gyekenyesi, John Z.; Jaskowiak, Martha H.

    1999-01-01

    Sixteen ply unidirectional zirconia coated single crystal Al2O3 fiber reinforced polycrystalline Al2O3 was tested in uniaxial tension at temperatures to 1400 C in air. Fiber volume fractions ranged from 26 to 31%. The matrix has primarily open porosity of approximately 40%. Theories for predicting the Young's modulus, first matrix cracking stress, and ultimate strength were applied and evaluated for suitability in predicting the mechanical behavior of Al2O3/Al2O3 composites. The composite exhibited pseudo tough behavior (increased area under the stress/strain curve relative to monolithic alumina) from 22 to 1400 C. The rule-of-mixtures provides a good estimate of the Young's modulus of the composite using the constituent properties from room temperature to approximately 1200 C for short term static tensile tests in air. The ACK theory provides the best approximation of the first matrix cracking stress while accounting for residual stresses at room temperature. Difficulties in determining the fiber/matrix interfacial shear stress at high temperatures prevented the accurate prediction of the first matrix cracking stress above room temperature. The theory of Cao and Thouless, based on Weibull statistics, gave the best prediction for the composite ultimate tensile strength.

  4. Interface behavior of Al2O3/Ti joints produced by liquid state bonding.

    PubMed

    Lemus-Ruiz, J; Guevara-Laureano, A O; Zarate-Medina, J; Arellano-Lara, A; Ceja-Cárdenas, L

    2015-04-01

    In this work we study brazing of Al2O3 to Ti with biocompatibility properties, using a Au-foil as joining element. Al2O3 was produced by sintering of powder at 1550°C. Al2O3 samples were coated with a 2 and 4μm thick of Mo layer and then stacked with Ti. Al2O3-Mo/Au/Ti combinations were joined at 1100°C in vacuum. Successful joining of Mo-Al2O3 to Ti was observed. Interface shows the formation of a homogeneous diffusion zone. Mo diffused inside Au forming a concentration line. Ti3Au and TiAu phases were observed.

  5. Interface Defect Hydrogen Depassivation and Capacitance-Voltage Hysteresis of Al2O3/InGaAs Gate Stacks.

    PubMed

    Tang, Kechao; Palumbo, Felix Roberto; Zhang, Liangliang; Droopad, Ravi; McIntyre, Paul C

    2017-03-01

    We investigate the effects of pre- and postatomic layer deposition (ALD) defect passivation with hydrogen on the trap density and reliability of Al2O3/InGaAs gate stacks. Reliability is characterized by capacitance-voltage hysteresis measurements on samples prepared using different fabrication procedures and having different initial trap densities. Despite its beneficial capability to passivate both interface and border traps, a final forming gas (H2/N2) anneal (FGA) step is correlated with a significant hysteresis. This appears to be caused by hydrogen depassivation of defects in the gate stack under bias stress, supported by the observed bias stress-induced increase of interface trap density, and strong hydrogen isotope effects on the measured hysteresis. On the other hand, intentional air exposure of the InGaAs surface prior to Al2O3 ALD increases the initial interface trap density (Dit) but considerably lowers the hysteresis.

  6. Plasma-assisted molecular beam epitaxy of Al(Ga)N layers and quantum well structures for optically pumped mid-UV lasers on c-Al2O3

    NASA Astrophysics Data System (ADS)

    Ivanov, S. V.; Nechaev, D. V.; Sitnikova, A. A.; Ratnikov, V. V.; Yagovkina, M. A.; Rzheutskii, N. V.; Lutsenko, E. V.; Jmerik, V. N.

    2014-06-01

    This paper reports on novel approaches developed for plasma-assisted molecular beam epitaxy of Al-rich AlGaN epilayers and quantum well heterostructures on c-sapphire, which allowed us to fabricate low-threshold optically-pumped separate confinement heterostructure lasers emitting in the mid-UV spectral range (258-290 nm) with the threshold power density below 600 kW cm-2. The optimum buffer structure has been developed which provides lowering the near-surface threading dislocation density down to 1.5 × 108 and 3 × 109 cm-2 for screw and edge types, respectively, and improving the surface morphology (rms < 0.7 nm at the area of 3 × 3 μm-2). It comprises the high-temperature (780 °C) migration enhanced epitaxy growth of a (30-70) nm thick AlN nucleation layer on c-Al2O3, followed by a 2 μm thick AlN buffer grown under the metal-rich conditions in the Al-flux modulation mode and containing several (up to 6) ultra-thin (˜3 nm) GaN interlayers grown at N-rich conditions. Proper strain engineering in AlGaN single quantum well heterostructure grown atop of the AlN buffer layer enables one to preserve dominant TE polarization of both spontaneous and stimulated emission even at shortest obtained wavelength (258 nm). The threshold power density of stimulated emission as low as 150 kW cm-2 at 289 nm for a single quantum well laser structure has been demonstrated.

  7. Energy-band alignment of atomic layer deposited (HfO2)x(Al2O3)1 - x gate dielectrics on 4H-SiC

    NASA Astrophysics Data System (ADS)

    Jia, Ren-Xu; Dong, Lin-Peng; Niu, Ying-Xi; Li, Cheng-Zhan; Song, Qing-Wen; Tang, Xiao-Yan; Yang, Fei; Zhang, Yu-Ming

    2015-03-01

    We study a series of (HfO2)x(Al2O3)1 - x /4H-SiC MOS capacitors. It is shown that the conduction band offset of HfO2 is 0.5 eV and the conduction band offset of HfAlO is 1.11-1.72 eV. The conduction band offsets of (HfO2)x(Al2O3)1 - x are increased with the increase of the Al composition, and the (HfO2)x(Al2O3)1 - x offer acceptable barrier heights (> 1 eV) for both electrons and holes. With a higher conduction band offset, (HfO2)x(Al2O3)1 - x/4H-SiC MOS capacitors result in a ˜ 3 orders of magnitude lower gate leakage current at an effective electric field of 15 MV/cm and roughly the same effective breakdown field of ˜ 25 MV/cm compared to HfO2. Considering the tradeoff among the band gap, the band offset, and the dielectric constant, we conclude that the optimum Al2O3 concentration is about 30% for an alternative gate dielectric in 4H-SiC power MOS-based transistors. Project supported by the National Natural Science Foundation of China (Grant Nos. 51272202 and 61234006) and the Science Project of State Grid, China (Grant No. SGRI-WD-71-14-004).

  8. Pinhole Effect on the Melting Behavior of Ag@Al2O3 SERS Substrates.

    PubMed

    Ma, Lingwei; Huang, Yu; Hou, Mengjing; Li, Jianghao; Zhang, Zhengjun

    2016-12-01

    High-temperature surface-enhanced Raman scattering (SERS) sensing is significant for practical detections, and pinhole-containing (PC) metal@oxide structures possessing both enhanced thermal stability and superior SERS sensitivity are served as promising SERS sensors at extreme sensing conditions. Through tuning the Al2O3 precursors' exposure time during atomic layer deposition (ALD), Al2O3 shells with different amount of pinholes were covered over Ag nanorods (Ag NRs). By virtue of these unique PC Ag@Al2O3 nanostructures, herein we provide an excellent platform to investigate the relationship between the pinhole rate of Al2O3 shells and the melting behavior, high-temperature SERS performances of these core-shell nanostructures. Pinhole effect on the melting procedures of PC Ag@Al2O3 substrates was characterized in situ via their reflectivity variations during heating, and the specific melting point was quantitatively estimated. It is found that the melting point of PC Ag@Al2O3 raised along with the decrement of pinhole rate, and substrates with less pinholes exhibited better thermal stability but sacrificed SERS efficiency. This work achieved highly reliable and precise control of the pinholes over Al2O3 shells, offering sensitive SERS substrates with intensified thermal stability and superior SERS performances at extreme sensing conditions.

  9. Pinhole Effect on the Melting Behavior of Ag@Al2O3 SERS Substrates

    NASA Astrophysics Data System (ADS)

    Ma, Lingwei; Huang, Yu; Hou, Mengjing; Li, Jianghao; Zhang, Zhengjun

    2016-03-01

    High-temperature surface-enhanced Raman scattering (SERS) sensing is significant for practical detections, and pinhole-containing (PC) metal@oxide structures possessing both enhanced thermal stability and superior SERS sensitivity are served as promising SERS sensors at extreme sensing conditions. Through tuning the Al2O3 precursors' exposure time during atomic layer deposition (ALD), Al2O3 shells with different amount of pinholes were covered over Ag nanorods (Ag NRs). By virtue of these unique PC Ag@Al2O3 nanostructures, herein we provide an excellent platform to investigate the relationship between the pinhole rate of Al2O3 shells and the melting behavior, high-temperature SERS performances of these core-shell nanostructures. Pinhole effect on the melting procedures of PC Ag@Al2O3 substrates was characterized in situ via their reflectivity variations during heating, and the specific melting point was quantitatively estimated. It is found that the melting point of PC Ag@Al2O3 raised along with the decrement of pinhole rate, and substrates with less pinholes exhibited better thermal stability but sacrificed SERS efficiency. This work achieved highly reliable and precise control of the pinholes over Al2O3 shells, offering sensitive SERS substrates with intensified thermal stability and superior SERS performances at extreme sensing conditions.

  10. Characterization of SDC-Al2O3 solid electrolyte

    NASA Astrophysics Data System (ADS)

    Ramesh, S.; Raju, K. C. James; Reddy, C. Vishnuvardhan

    2012-06-01

    SDC20-Al2O3 materials were synthesized through the sol-gel method. Dense SDC20-Al2O3 ceramics were obtained through sintering the pellets at 1300°C. SDC20-Al2O3 materials were characterized by XRD, SEM and impedance spectroscopy. XRD measurements indicate that synthesized materials crystallized in cubic structure. Average crystallite size of the samples was in the range 11-12 nm. The relative density of SDC20-Al2O3 samples was over 95% of the theoretical density. Addition of Al2O3 promotes densification. Surface morphology was analyzed using SEM. The two-probe a.c. impedance spectroscopy was used to study the total ionic conductivity of doped and co-doped ceria in the temperature range 350-700°C. The SDC20-Al2O3 composition showed improved total ionic conductivity and minimum activation energy.

  11. Enhanced Charge Collection with Passivation Layers in Perovskite Solar Cells.

    PubMed

    Lee, Yong Hui; Luo, Jingshan; Son, Min-Kyu; Gao, Peng; Cho, Kyung Taek; Seo, Jiyoun; Zakeeruddin, Shaik M; Grätzel, Michael; Nazeeruddin, Mohammad Khaja

    2016-05-01

    The Al2 O3 passivation layer is beneficial for mesoporous TiO2 -based perovskite solar cells when it is deposited selectively on the compact TiO2 surface. Such a passivation layer suppressing surface recombination can be formed by thermal decomposition of the perovskite layer during post-annealing.

  12. Comparison of HfAlO, HfO2/Al2O3, and HfO2 on n-type GaAs using atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Lu, Bin; Lv, Hongliang; Zhang, Yuming; Zhang, Yimen; Liu, Chen

    2016-11-01

    Different high-permittivity (high-k) gate dielectric structures of HfO2, HfAlO, and HfO2/Al2O3 deposited on HF-etched n-GaAs using ALD have been investigated. It has been demonstrated that the stacked structure of HfO2/Al2O3 has the lowest interface state density of 8.12 × 1012eV-1 cm-2 due to the "self-cleaning" reaction process, but the sample of HfAlO shows much better frequency dispersion and much higher dielectric permittivity extracted from the C-V curves. The investigation reveals that the electrical properties of gate dielectrics are improved by introducing alumina into HfO2.

  13. Comparative study of atomic-layer-deposited HfO2/Al2O3, Hf0.8Al0.2Ox and Hf0.5Al0.5Ox on N-GaAs

    NASA Astrophysics Data System (ADS)

    Yu, Xinjiang; Lv, Hongliang; Zhang, Yuming; Zhang, Yimen; Qin, Zaiyang

    2016-11-01

    Interfacial properties of n-GaAs metal-oxide-semiconductor (MOSCAPs) with the gate dielectrics of HfO2/Al2O3, Hf0.8Al0.2Ox and Hf0.5Al0.5Ox are investigated. The results reveal that Hf0.5Al0.5Ox has larger permittivity and lower interface trap density than that of HfO2/Al2O3. In order to explain the result from the physical perspective, the XPS tests of all three samples are performed. It is found that the main reason to form interface trap of three samples treated with 500 °C post-deposition annealing, is attributed to the interfacial component of Ga2O3 and The Hf0.5Al0.5Ox dielectric is beneficial to reducing the formation of Ga2O3.

  14. Structure, optical properties and thermal stability of Al2O3-WC nanocomposite ceramic spectrally selective solar absorbers

    NASA Astrophysics Data System (ADS)

    Gao, Xiang-Hu; Wang, Cheng-Bing; Guo, Zhi-Ming; Geng, Qing-Fen; Theiss, Wolfgang; Liu, Gang

    2016-08-01

    Traditional metal-dielectric composite coating has found important application in spectrally selective solar absorbers. However, fine metal particles can easily diffuse, congregate, or be oxidized at high temperature, which causes deterioration in the optical properties. In this work, we report a new spectrally selective solar absorber coating, composed of low Al2O3 ceramic volume fraction (Al2O3(L)-WC) layer, high Al2O3 ceramic volume fraction (Al2O3(H)-WC layer) and Al2O3 antireflection layer. The features of our work are: 1) compared with the metal-dielectric composites concept, Al2O3-WC nanocomposite ceramic successfully achieves the all-ceramic concept, which exhibits a high solar absorptance of 0.94 and a low thermal emittance of 0.08, 2) Al2O3 and WC act as filler material and host material, respectively, which are different from traditional concept, 3) Al2O3-WC nanocomposite ceramic solar absorber coating exhibits good thermal stability at 600 °C. In addition, the solar absorber coating is successfully modelled by a commercial optical simulation programme, the result of which agrees with the experimental results.

  15. A study on Si / Al 2 O 3 paramagnetic point defects

    NASA Astrophysics Data System (ADS)

    Kühnhold-Pospischil, S.; Saint-Cast, P.; Hofmann, M.; Weber, S.; Jakes, P.; Eichel, R.-A.; Granwehr, J.

    2016-11-01

    In this contribution, negative charges and electronic traps related to the Si / Al 2 O 3 interface were measured and related to paramagnetic point defects and molecular vibrations. To this end, contactless capacitance voltage measurements, X-band electron paramagnetic resonance (EPR), and infrared spectroscopy were carried out, and their results were compared. A change in the negative charge density and electron trap density at the Si / Al 2 O 3 interface was achieved by adding a thermally grown SiO 2 layer with varying thicknesses and conducting an additional temperature treatment. Using EPR, five paramagnetic moments were detected in Si / ( SiO 2 ) / Al 2 O 3 samples with g values of g 1 = 2.0081 ± 0.0002 , g 2 = 2.0054 ± 0.0002 , g 3 = 2.0003 ± 0.0002 , g 4 = 2.0026 ± 0.0002 , and g 5 = 2.0029 ± 0.0002 . Variation of the Al 2 O 3 layer thickness shows that paramagnetic species associated with g1, g2, and g3 are located at the Si / Al 2 O 3 interface, and those with g4 and g5 are located within the bulk Al 2 O 3 . Furthermore, g1, g2, and g3 were shown to originate from oxygen plasma exposure during Al 2 O 3 deposition. Comparing the g values and their location within the Si / Al 2 O 3 system, g1 and g3 can be attributed to P b 0 centers, g3 to Si dangling bonds (Si-dbs), and g4 and g5 to rotating methyl radicals. All paramagnetic moments observed in this contribution disappear after a 5-min temperature treatment at 450 ° C . The deposition of an additional thermal SiO 2 layer between the Si and the Al 2 O 3 decreases the negative fixed charge density and defect density by about one order of magnitude. In this contribution, these changes can be correlated with a decrease in amplitude of the Si-db signal. P b 0 and the methyl radical signals were less affected by this additional SiO 2 layer. Based on these observations, microscopic models for the negative fixed charge density ( Q tot ) and the interface trap density ( D it ) and the connection between these

  16. Fabrication and characterization of Al2O3 /Si composite nanodome structures for high efficiency crystalline Si thin film solar cells

    NASA Astrophysics Data System (ADS)

    Zhang, Ruiying; Zhu, Jian; Zhang, Zhen; Wang, Yanyan; Qiu, Bocang; Liu, Xuehua; Zhang, Jinping; Zhang, Yi; Fang, Qi; Ren, Zhong; Bai, Yu

    2015-12-01

    We report on our fabrication and characterization of Al2O3/Si composite nanodome (CND) structures, which is composed of Si nanodome structures with a conformal cladding Al2O3 layer to evaluate its optical and electrical performance when it is applied to thin film solar cells. It has been observed that by application of Al2O3thin film coating using atomic layer deposition (ALD) to the Si nanodome structures, both optical and electrical performances are greatly improved. The reflectivity of less than 3% over the wavelength range of from 200 nm to 2000 nm at an incident angle from 0° to 45° is achieved when the Al2O3 film is 90 nm thick. The ultimate efficiency of around 27% is obtained on the CND textured 2 μm-thick Si solar cells, which is compared to the efficiency of around 25.75% and 15% for the 2 μm-thick Si nanodome surface-decorated and planar samples respectively. Electrical characterization was made by using CND-decorated MOS devices to measure device's leakage current and capacitance dispersion. It is found the electrical performance is sensitive to the thickness of the Al2O3 film, and the performance is remarkably improved when the dielectric layer thickness is 90 nm thick. The leakage current, which is less than 4x10-9 A/cm2 over voltage range of from -3 V to 3 V, is reduced by several orders of magnitude. C-V measurements also shows as small as 0.3% of variation in the capacitance over the frequency range from 10 kHz to 500 kHz, which is a strong indication of surface states being fully passivated. TEM examination of CND-decorated samples also reveals the occurrence of SiOx layer formed between the interface of Si and the Al2O3 film, which is thin enough that ensures the presence of field-effect passivation, From our theoretical and experimental study, we believe Al2O3 coated CND structures is a truly viable approach to achieving higher device efficiency.

  17. Characterization of Al2O3 in High-Strength Mo Alloy Sheets by High-Resolution Transmission Electron Microscopy.

    PubMed

    Zhou, Yucheng; Gao, Yimin; Wei, Shizhong; Hu, Yajie

    2016-02-01

    A novel type of alumina (Al2O3)-doped molybdenum (Mo) alloy sheet was prepared by a hydrothermal method and a subsequent powder metallurgy process. Then the characterization of α-Al2O3 was investigated using high-resolution transmission electron microscopy as the research focus. The tensile strength of the Al2O3-doped Mo sheet is 43-85% higher than that of the pure Mo sheet, a very obvious reinforcement effect. The sub-micron and nanometer-scale Al2O3 particles can increase the recrystallization temperature by hindering grain boundary migration and improve the tensile strength by effectively blocking the motion of the dislocations. The Al2O3 particles have a good bond with the Mo matrix and there exists an amorphous transition layer at the interface between Al2O3 particles and the Mo matrix in the as-rolled sheet. The sub-structure of α-Al2O3 is characterized by a number of nanograins in the $\\left[ {2\\bar{2}1} \\right]$ direction. Lastly, a new computer-based method for indexing diffraction patterns of the hexagonal system is introduced, with 16 types of diffraction patterns of α-Al2O3 indexed.

  18. Atomic Layer Deposition of Al2O3-Ga2O3 Alloy Coatings for Li[Ni0.5Mn0.3Co0.2]O2 Cathode to Improve Rate Performance in Li-Ion Battery.

    PubMed

    Laskar, Masihhur R; Jackson, David H K; Guan, Yingxin; Xu, Shenzhen; Fang, Shuyu; Dreibelbis, Mark; Mahanthappa, Mahesh K; Morgan, Dane; Hamers, Robert J; Kuech, Thomas F

    2016-04-27

    Metal oxide coatings can improve the electrochemical stability of cathodes and hence, their cycle-life in rechargeable batteries. However, such coatings often impose an additional electrical and ionic transport resistance to cathode surfaces leading to poor charge-discharge capacity at high C-rates. Here, a mixed oxide (Al2O3)1-x(Ga2O3)x alloy coating, prepared via atomic layer deposition (ALD), on Li[Ni0.5Mn0.3Co0.2]O2 (NMC) cathodes is developed that has increased electron conductivity and demonstrated an improved rate performance in comparison to uncoated NMC. A "co-pulsing" ALD technique was used which allows intimate and controlled ternary mixing of deposited film to obtain nanometer-thick mixed oxide coatings. Co-pulsing allows for independent control over film composition and thickness in contrast to separate sequential pulsing of the metal sources. (Al2O3)1-x(Ga2O3)x alloy coatings were demonstrated to improve the cycle life of the battery. Cycle tests show that increasing Al-content in alloy coatings increases capacity retention; whereas a mixture of compositions near (Al2O3)0.5(Ga2O3)0.5 was found to produce the optimal rate performance.

  19. InP MOS capacitor and E-mode n-channel FET with ALD Al2O3-based high- k dielectric

    NASA Astrophysics Data System (ADS)

    Yen, Chih-Feng; Yeh, Min-Yen; Chong, Kwok-Keung; Hsu, Chun-Fa; Lee, Ming-Kwei

    2016-07-01

    The electrical characteristics of atomic-layer-deposited Al2O3/TiO2/Al2O3 on (NH4)2S-treated InP MOS capacitor and related MOSFET were studied. The electrical characteristics were improved from the reduction of native oxides and sulfur passivation on InP by (NH4)2S treatment. The high bandgap Al2O3 on TiO2 can reduce the thermionic emission, and the Al2O3 under TiO2 improves the interface-state density by self-cleaning. The high dielectric constant TiO2 is used to lower the equivalent oxide thickness. The leakage currents can reach 2.3 × 10-8 and 2.2 × 10-7 A/cm2 at ±2 MV/cm, respectively. The lowest interface-state density is 4.6 × 1011 cm-2 eV-1 with a low-frequency dispersion of 15 %. The fabricated enhancement-mode n-channel sulfur-treated InP MOSFET exhibits good electrical characteristics with a maximum transconductance of 146 mS/mm and effective mobility of 1760 cm2/V s. The subthreshold swing and threshold voltage are 117 mV/decade and 0.44 V, respectively.

  20. Synthesis and thermal characterization of Al2O3 nanoparticles

    NASA Astrophysics Data System (ADS)

    Ismardi, A.; Rosadi, O. M.; Kirom, M. R.; Syarif, D. G.

    2016-11-01

    Al2O3 nanoparticle has been successfully synthesized using sol gel method from AlCl3. The obtained nanoparticles was then characterized for grain size measurement, the size of nanoparticles was 6 nm by using surface area meter (SAM) and Transmission Electron Microscopy (TEM). The crystallinity property of the product was then checked with XRD spectroscopy, the result shows that the diffraction peaks were match with the 10-0425 JCPDS database. Thermal property of the Al2O3 nanoparticles was then studied by mixing it with engine base fluid as nanofluid. The usage of nanofluid was expected to be heat absorber and woulo increase cooling process in cooling machine. The results showed that cooling time increases when the concentration of nanofluid was increased. Finally, it is concluded that thermal property of Al2O3 was studied and applicable to be mixed with engine coolant of cooler machine to reduce cooling time process.

  1. Structural study of radiolytic catalysts Ni-Ce/Al2O3 and Ni-Pt/Al2O3

    NASA Astrophysics Data System (ADS)

    Seridi, F.; Chettibi, S.; Keghouche, N.; Beaunier, P.; Belloni, J.

    2017-01-01

    Ni-Ce and Ni-Pt bimetallic catalysts supported over α-Al2O3 are synthesized by using co-impregnation method, and then reduced, each via radiolytic process or thermal H2-treatment. For Ni-Ce/Al2O3, the structural study reveals that Ce is alloyed with Ni as Ce2Ni7 nanoparticles in the radiation-reduced catalysts, while it segregates to the surface in the form of CeO2 in the H2-reduced catalysts. For Ni-Pt/Al2O3 radiolytic catalysts, Ni, Pt, NiPt and Ni3Pt nanoparticles, which size is 3.5 nm, are observed. When the radiation-reduced samples are tested in the benzene hydrogenation, they both display high conversion rate. However, the Ni-Pt/Al2O3 is more efficient than Ni-Ce/Al2O3. The performance of the catalysts is correlated with the high dispersion of the metal and the presence of intermetallic Ni-Pt and Ni-Ce phases. It is compared to that of other radiolytic monometallic/oxide catalysts of the literature.

  2. Rapid fabrication of Al2O3 encapsulations for organic electronic devices

    NASA Astrophysics Data System (ADS)

    Ali, Kamran; Ali, Junaid; Mehdi, Syed Murtuza; Choi, Kyung-Hyun; An, Young Jin

    2015-10-01

    Organic electronics have earned great reputation in electronic industry yet they suffer technical challenges such as short lifetimes and low reliability because of their susceptibility to water vapor and oxygen which causes their fast degradation. This paper report on the rapid fabrication of Al2O3 encapsulations through a unique roll-to-roll atmospheric atomic layer deposition technology (R2R-AALD) for the life time enhancement of organic poly (4-vinylphenol) (PVP) memristor devices. The devices were then categorized into two sets. One was processed with R2R-AALD Al2O3 encapsulations at 50 °C and the other one was kept as un-encapsulated. The field-emission scanning electron microscopy (FESEM) results revealed that pin holes and other irregularities in PVP films with average arithmetic roughness (Ra) of 9.66 nm have been effectively covered by Al2O3 encapsulation having Ra of 0.92 nm. The X-ray photoelectron spectroscopy XPS spectrum for PVP film showed peaks of C 1s and O 1s at the binding energies of 285 eV and 531 eV, respectively. The respective appearance of Al 2p, Al 2s, and O 1s peaks at the binding energies of 74 eV, 119 eV, and 531 eV, confirms the fabrication of Al2O3 films. Electrical current-voltage (I-V) measurements confirmed that the Al2O3 encapsulation has a huge influence on the performance, robustness and life time of memristor devices. The Al2O3 encapsulated memristor performed with superior stability for four weeks whereas the un-encapsulated devices could only last for one week. The performance of encapsulated device had been promising after being subjected to bending test for 100 cycles and the variations in its stability were of minor concern confirming the mechanical robustness and flexibility of the devices.

  3. Distinctive electrical properties in sandwich-structured Al2O3/low density polyethylene nanocomposites

    NASA Astrophysics Data System (ADS)

    Wang, Si-Jiao; Zha, Jun-Wei; Li, Wei-Kang; Dang, Zhi-Min

    2016-02-01

    The sandwich-structured Al2O3/low density polyethylene (Al2O3/LDPE) nanocomposite dielectrics consisting of layer-by-layer with different concentration Al2O3 loading were prepared by melt-blending and following hot pressing method. The space charge distribution from pulsed electro-acoustic method and breakdown strength of the nanocomposites were investigated. Compared with the single-layer Al2O3/LDPE nanocomposites, the sandwich-structured nanocomposites remarkably suppressed the space charge accumulation and presented higher breakdown strength. The charges in the sandwich-structured nanocomposites decayed much faster than that in the single-layer nanocomposites, which was attributed to an effective electric field caused by the formation of the interfacial space charges. The energy depth of shallow and deep traps was estimated as 0.73 eV and 1.17 eV in the sandwich-structured nanocomposites, respectively, according to the thermal excitation theoretical model we proposed. This work provides an attractive strategy of design and fabrication of polymer nanocomposites with excellent space charge suppression.

  4. Al2O3 e-Beam Evaporated onto Silicon (100)/SiO2, by XPS

    SciTech Connect

    Madaan, Nitesh; Kanyal, Supriya S.; Jensen, David S.; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Samha, Hussein; Linford, Matthew R.

    2013-09-25

    We report the XPS characterization of a thin film of Al2O3 (35 nm) deposited via e-beam evaporation onto silicon (100). The film was characterized with monochromatic Al Ka radiation. An XPS survey scan, an Al 2p narrow scan, and the valence band spectrum were collected. The Al2O3 thin film is used as a diffusion barrier layer for templated carbon nanotube (CNT) growth in the preparation of microfabricated thin layer chromatography plates.

  5. The FTIR studies of gels and thin films of Al2O3-TiO2 and Al2O3-TiO2-SiO2 systems.

    PubMed

    Adamczyk, Anna; Długoń, Elżbieta

    2012-04-01

    In this work, samples in form of bulk ones and thin films were obtained using the sol-gel method. The bulk samples were heated at different temperatures (500 °C, 850 °C and 1100 °C) corresponding to the annealing process of coatings, deposited on different substrates by dipping and pulling out samples from the proper sol with the stable speed. Thin films of both Al2O3-TiO2 and Al2O3-TiO2-SiO2 systems were deposited on carbon, steel and titanium substrates in two different ways: as single layers obtained from Al2O3 sol, TiO2 sol and Al2O3 sol or deposited as mixed coatings from Al2O3-TiO2 sol as well as Al2O3-TiO2-SiO2 one. All bulk samples were studied by the FTIR spectroscopy and the X-ray diffractometry while thin films were also investigated by the electron microscopy. In the IR spectra of Al2O3-TiO2 samples, as well as gels and coatings, bands due to the vibrations of AlO bonds of the octahedrally and tetrahedrally coordinated aluminum were observed. The IR spectra of samples of Al2O3-TiO2-SiO2 system differ from that of Al2O3-TiO2 ones in presence of bands assigned to the SiO bond vibrations and in positions of bands due to AlO bond vibrations. In all spectra of bulk samples and coatings, the positions of TiO bond vibrations were ascribed basing on the IR spectra of the pure anatase and rutile.

  6. Preparation and catalytic behavior of CeO2 nanoparticles on Al2O3 crystal

    NASA Astrophysics Data System (ADS)

    Hattori, Takashi; Kobayashi, Katsutoshi; Ozawa, Masakuni

    2017-01-01

    In this work, we examined the preparation, morphology, and catalytic behavior of CeO2 nanoparticles (NPs) on Al2O3(0001) crystal substrates. A CeO2 NP layer was prepared by the dipping method using a CeO2 nanocrystal colloid solution. Even after heat treatment at 1000 °C, the CeO2 NP layer maintained the granular morphology of CeO2 with a grain diameter of less than 40 nm. CeO2 NPs on an Al2O3 crystal showed higher oxidation activity for gaseous hydrogen at moderate temperatures and enhanced oxygen release properties of CeO2, compared with CeO2 powder. This was due to the highly dispersed CeO2 NPs and the interaction between CeO2 NPs and Al2O3; this clarified the importance of the Al2O3 support for the CeO2 catalyst.

  7. Transport mechanisms of leakage current in Al2O3/InAlAs MOS capacitors

    NASA Astrophysics Data System (ADS)

    Jin, Chengji; Lu, Hongliang; Zhang, Yimen; Zhang, Yuming; Guan, He; Wu, Lifan; Lu, Bin; Liu, Chen

    2016-09-01

    An Al2O3 layer is inserted between the InAlAs layer and the metal gate in InAs/AlSb HEMTs to suppress the leakage current. The transport mechanisms of leakage current in Al2O3/InAlAs metal-oxide-semiconductor (MOS) capacitors at both positive and negative biases at different temperatures ranging from 10 °C to 70 °C are investigated. For positive bias, the leakage current is dominated by Schottky emission. Based on the fitted straight lines, the relative dielectric constant of Al2O3 and the barrier height between Al2O3 and InAlAs are extracted. However, for negative bias, the leakage current is dominated by Frenkel-Poole (F-P) emission and the depth of the trap energy level from the conduction band (ϕt) is extracted. Furthermore, authors explain the reason why the dominating mechanisms at positive and negative biases are different.

  8. Plasma etching behavior of Y2O3 ceramics: Comparative study with Al2O3

    NASA Astrophysics Data System (ADS)

    Cao, Yu-Chao; Zhao, Lei; Luo, Jin; Wang, Ke; Zhang, Bo-Ping; Yokota, Hiroki; Ito, Yoshiyasu; Li, Jing-Feng

    2016-03-01

    The plasma etching behavior of Y2O3 coating was investigated and compared with that of Al2O3 coating under various conditions, including chemical etching, mixing etching and physical etching. The etching rate of Al2O3 coating declined with decreasing CF4 content under mixing etching, while that of Y2O3 coating first increased and then decreased. In addition, the Y2O3 coating demonstrated higher erosion-resistance than Al2O3 coating after exposing to fluorocarbon plasma. X-ray photoelectron spectroscopy (XPS) analysis confirmed the formations of YF3 and AlF3 on the Y2O3 and Al2O3 coatings, respectively, which acted as the protective layer to prevent the surface from further erosion with fluorocarbon plasma. It was revealed that the etching behavior of Y2O3 depended not only on the surface fluorination but also on the removal of fluoride layer. To analyze the effect of porosity, Y2O3 bulk samples with high density were prepared by spark plasma sintering, and they demonstrated higher erosion-resistances compared with Y2O3 coating.

  9. Effect of Heat Treatment on the Microstructure and Microhardness of Nanostructural Al2O3 Coatings

    NASA Astrophysics Data System (ADS)

    Kovaleva, M.; Tyurin, Yu.; Vasilik, N.; Kolisnichenko, O.; Prozorova, M.; Arseenko, M.; Sirota, V.; Pavlenko, I.

    2014-10-01

    Nanostructural Al2O3 coatings were formed on a steel substrate surface using a multichamber detonation sprayer. The Al2O3 coatings were characterized by a dense microstructure with porosity below 1% and hardness of 1300 ± 25 HV0.3. The transition layer between the coating and substrate was up to 15 μm thick, containing Fe-Al-type intermetallic compounds (FeAl3, Fe2Al5). Postdeposition heat treatment of the samples at 850 °C for 3 h was carried out in air and argon environments. The effect of heat treatment on the microstructure and microhardness of the Al2O3 coatings was investigated by optical microscopy, scanning and transmission electron microscopy, scanning probe microscopy, x-ray phase analysis, and Vickers hardness testing. A positive impact of postcoating heat treatment on the coating microstructure and microhardness was observed. Heat treatment resulted in an increase in the coating hardness from 1300, to 1350 ± 25 HV0.3 and 1600 ± 25 HV0.3 after annealing in air and argon, respectively. Heat treatment in argon led to a more significant increase in the α-Al2O3 phase from 47 to 81%.

  10. On the Structural and Chemical Characteristics of Co/Al2O3/graphene Interfaces for Graphene Spintronic Devices.

    PubMed

    Canto, Bárbara; Gouvea, Cristol P; Archanjo, Bráulio S; Schmidt, João E; Baptista, Daniel L

    2015-09-23

    We report a detailed investigation of the structural and chemical characteristics of thin evaporated Al2O3 tunnel barriers of variable thickness grown onto single-layer graphene sheets. Advanced electron microscopy and spectrum-imaging techniques were used to investigate the Co/Al2O3/graphene/SiO2 interfaces. Direct observation of pinhole contacts was achieved using FIB cross-sectional lamellas. Spatially resolved EDX spectrum profiles confirmed the presence of direct point contacts between the Co layer and the graphene. The high surface diffusion properties of graphene led to cluster-like Al2O3 film growth, limiting the minimal possible thickness for complete barrier coverage onto graphene surfaces using standard Al evaporation methods. The results indicate a minimum thickness of nominally 3 nm Al2O3, resulting in a 0.6 nm rms rough film with a maximum thickness reaching 5 nm.

  11. On the Structural and Chemical Characteristics of Co/Al2O3/graphene Interfaces for Graphene Spintronic Devices

    PubMed Central

    Canto, Bárbara; Gouvea, Cristol P.; Archanjo, Bráulio S.; Schmidt, João E.; Baptista, Daniel L.

    2015-01-01

    We report a detailed investigation of the structural and chemical characteristics of thin evaporated Al2O3 tunnel barriers of variable thickness grown onto single-layer graphene sheets. Advanced electron microscopy and spectrum-imaging techniques were used to investigate the Co/Al2O3/graphene/SiO2 interfaces. Direct observation of pinhole contacts was achieved using FIB cross-sectional lamellas. Spatially resolved EDX spectrum profiles confirmed the presence of direct point contacts between the Co layer and the graphene. The high surface diffusion properties of graphene led to cluster-like Al2O3 film growth, limiting the minimal possible thickness for complete barrier coverage onto graphene surfaces using standard Al evaporation methods. The results indicate a minimum thickness of nominally 3 nm Al2O3, resulting in a 0.6 nm rms rough film with a maximum thickness reaching 5 nm. PMID:26395513

  12. Epitaxial growth and electrochemical transfer of graphene on Ir(111)/α-Al2O3(0001) substrates

    NASA Astrophysics Data System (ADS)

    Koh, Shinji; Saito, Yuta; Kodama, Hideyuki; Sawabe, Atsuhito

    2016-07-01

    Low-pressure chemical vapor deposition growth of graphene on Iridium (Ir) layers epitaxially deposited on α-Al2O3 (0001) substrates was investigated. The X-ray diffraction, Raman and reflection high energy electron diffraction characterizations revealed that graphene films were epitaxially grown on Ir(111) layers, and the in-plane epitaxial relationship between graphene, Ir(111), and α-Al2O3(0001) was graphene ⟨ 1 1 ¯ 00 ⟩//Ir⟨ 11 2 ¯ ⟩//α-Al2O3⟨ 11 2 ¯ 0 ⟩. The graphene on Ir(111) was electrochemically transferred onto SiO2/Si substrates. We also demonstrated the reuse of the Ir(111)/α-Al2O3(0001) substrates in multiple growth and transfer cycles.

  13. Versatile sputtering technology for Al2O3 gate insulators on graphene.

    PubMed

    Friedemann, Miriam; Woszczyna, Mirosław; Müller, André; Wundrack, Stefan; Dziomba, Thorsten; Weimann, Thomas; Ahlers, Franz J

    2012-04-01

    We report a novel, sputtering-based fabrication method of Al2O3 gate insulators on graphene. Electrical performance of dual-gated mono- and bilayer exfoliated graphene devices is presented. Sputtered Al2O3 layers possess comparable quality to oxides obtained by atomic layer deposition with respect to a high relative dielectric constant of about 8, as well as low-hysteresis performance and high breakdown voltage. We observe a moderate carrier mobility of about 1000 cm(2) V(-1) s(-1) in monolayer graphene and 350 cm(2) V(-1) s(-1) in bilayer graphene, respectively. The mobility decrease can be attributed to the resonant scattering on atomic-scale defects, likely originating from the Al precursor layer evaporated prior to sputtering.

  14. Mechanical properties of Al2O3 inverse opals by means of nanoindentation

    NASA Astrophysics Data System (ADS)

    Roa, J. J.; Coll, A.; Bermejo, S.; Jiménez-Piqué, E.; Alcubilla, R.; Castañer, L.; Llanes, L.

    2016-11-01

    In order to understand the mechanical behaviour of Al2O3 inverse opals, nanoindentation techniques have been implemented in material layers with three different microstructures, in terms of hollow or polystyrene spheres, with Al2O3 shells of distinct wall thickness. Different indenter tip geometries as well as contact loading conditions have been used, in order to induce different stress field and fracture events to the layers. Field emission scanning electron microscopy and focused ion beam have been employed to understand accommodation of plastic deformation induced during the indentation process. Results show that materials with polystyrene spheres exhibit higher hardness and modulus under sharp indentation, and cracking resistance under spherical indentation. Furthermore, deformation is discerned to be mainly governed by the rotation of the microspheres. In the case of the inverse opals made of hollow spheres, the main deformation mechanisms activated under indentation are the rearrangement and densification of them.

  15. Comparison of the degradation characteristics of AlON/InGaAs and Al2O3/InGaAs stacks

    NASA Astrophysics Data System (ADS)

    Palumbo, F.; Krylov, I.; Eizenberg, M.

    2015-03-01

    In this paper, the degradation characteristics of MOS (Metal-Oxide-Semiconductor) stacks with Al2O3/AlON or Al2O3 only as dielectric layers on InGaAs were studied. The dielectric nitrides are proposed as possible passivation layers to prevent InGaAs oxidation. At negative bias, it has been found out that the main contribution to the overall degradation of the gate oxide is dominated by the generation of positive charge in the gate oxide. This effect is pronounced in MOS stacks with Al2O3/AlON as dielectric, where we think the positive charge is mainly generated in the AlON interlayer. At positive bias, the degradation is dominated by buildup of negative charge due to electron trapping in pre-existing or stress-induced traps. For stress biases where the leakage currents are low, the changes in the electrical characteristics are dominated by electron-trapping into traps located in energy levels in the upper part of the semiconductor gap. For stress biases with higher leakage current levels, the electron trapping occurs in stress-induced traps increasing the shift of VFB towards positive bias. The overall results clearly show that the improvement of the high-k dielectric/InGaAs interface by introducing N into the Al-oxide does not necessarily mean an increase in the reliability of the MOS stack.

  16. Electrical characteristics of multilayered HfO2-Al2O3 charge trapping stacks deposited by ALD

    NASA Astrophysics Data System (ADS)

    Spassov, D.; Paskaleva, A.; Guziewicz, E.; Luka, G.; AKrajewski, T.; Kopalko, K.; Wierzbicka, A.; Blagoev, B.

    2016-10-01

    Electrical and charge trapping properties of atomic layer deposited HfO2-Al2O3 multilayer stacks with two different Al2O3 sublayer thicknesses were investigated regarding their implementation in charge trapping non-volatile memories. The effect of post deposition annealing in oxygen at 600°C is also studied. The decreasing Al2O3 thickness increases the stack's dielectric constant and the density of the initial positive oxide charge. The initial oxide charge increases after annealing to ∼6×1012 cm-2 and changes its sign to negative for the stacks with thicker Al2O3. The annealing enhances the dielectric constant of the stacks and reduces their thickness preserving the amorphous status. Nevertheless the annealing is not beneficial for the stacks with thicker Al2O3 as it considerably increases leakage currents. Conduction mechanisms in stacks were considered in terms of hopping conduction at low electric fields, and Fowler- Nordheim tunnelling, Schottky emission and Poole-Frenkel effect at higher ones. Maximum memory windows of about 12 and 16V were obtained for the as-grown structures with higher and lower Al2O3 content, respectively. In latter case additional improvement (the memory window increase up to 23V) is achieved by the annealing.

  17. Structural and phase transition of α-Al2O3 powders obtained by co-precipitation method

    NASA Astrophysics Data System (ADS)

    Bharthasaradhi, R.; Nehru, L. C.

    2016-01-01

    Aluminium oxide has been synthesized by co-precipitation technique at different annealing temperature. Powder XRD confirms the formation of α-Al2O3 with rhombohedral crystal structure having lattice constant a = 4.76 Å and b = 12.99 Å by the Scherer formula, the average crystallite size is estimated to be 66 nm. The scanning electron microscope results expose the fact that the α-Al2O3 nanomaterials are seemingly porous in nature and highly agglomerated. Chemical composition of aluminium oxide is confirmed by energy dispersive spectroscopy. The molecular functional group is confirmed by FTIR. Optical absorption of α-Al2O3 has been studied in the UV-vis region and its direct band gap is estimated to be 5.97 eV. This study involves the structural and phase transition of Al2O3 and also indicates that α-Al2O3 has considerable properties, deserving further investigation for the energetic materials with excellent properties for the possibility of using thin-layer α-Al2O3 as a thermo luminescence material.

  18. Integration of crystalline orientated γ-Al2O3 films and complementary metal-oxide-semiconductor circuits on Si(1 0 0) substrate

    NASA Astrophysics Data System (ADS)

    Oishi, Koji; Akai, Daisuke; Ishida, Makoto

    2015-01-01

    In this paper, integration of crystalline orientated γ-Al2O3 films and complementary metal-oxide-semiconductor (CMOS) circuits on Si(1 0 0) substrate was reported. In this integration processes, crystalline γ-Al2O3 films need to be preserved their crystallinity during high temperature annealing processes of CMOS fabrication in order to prevent surface condition changes. The γ-Al2O3 films grown on Si substrates are annealed in the CMOS fabrication process conditions, drive-in annealing at 1150 °C in O2 atmosphere and wet annealing 1000 °C in H2O vapor atmosphere. Reflection high energy electron diffraction (RHEED) and x-ray diffraction (XRD) were used to characterize the crystallinity of γ-Al2O3 films after the annealing processes. Surface conditions of the films are analyzed and observed with X-ray photoelectron spectroscopy (XPS) and scanning electron microscope (SEM). As a result, RHEED patterns of the γ-Al2O3 films indicated that wet oxidation annealing was a critical process severally inferior surface condition of crystalline γ-Al2O3 films. XRD, XPS, and SEM investigation unveiled further details of the crystallinity changes on γ-Al2O3 films for each process. These results indicated passivation films were required to integrate γ-Al2O3 films with CMOS fabrication process. Therefore we proposed and introduced Si3N4/TEOS passivation films on γ-Al2O3 films in CMOS fabrication processes. At last, MOSFETs on γ-Al2O3 integrated Si(1 0 0) substrate were fabricated and characterized. The designed characteristics of MOSFETs were obtained on γ-Al2O3 integrated Si substrate.

  19. Influence of the Al2O3 partial-monolayer number on the crystallization mechanism of TiO2 in ALD TiO2/Al2O3 nanolaminates and its impact on the material properties

    NASA Astrophysics Data System (ADS)

    Testoni, G. E.; Chiappim, W.; Pessoa, R. S.; Fraga, M. A.; Miyakawa, W.; Sakane, K. K.; Galvão, N. K. A. M.; Vieira, L.; Maciel, H. S.

    2016-09-01

    TiO2/Al2O3 nanolaminates are being investigated to obtain unique materials with chemical, physical, optical, electrical and mechanical properties for a broad range of applications that include electronic and energy storage devices. Here, we discuss the properties of TiO2/Al2O3 nanolaminate structures constructed on silicon (1 0 0) and glass substrates using atomic layer deposition (ALD) by alternatively depositing a TiO2 sublayer and Al2O3 partial-monolayer using TTIP-H2O and TMA-H2O precursors, respectively. The Al2O3 is formed by a single TMA-H2O cycle, so it is a partial-monolayer because of steric hindrance of the precursors, while the TiO2 sublayer is formed by several TTIP-H2O cycles. Overall, each nanolaminate incorporates a certain number of Al2O3 partial-monolayers with this number varying from 10-90 in the TiO2/Al2O3 nanolaminate grown during 2700 total reaction cycles of TiO2 at a temperature of 250 °C. The fundamental properties of the TiO2/Al2O3 nanolaminates, namely film thickness, chemical composition, microstructure and morphology were examined in order to better understand the influence of the number of Al2O3 partial-monolayers on the crystallization mechanism of TiO2. In addition, some optical, electrical and mechanical properties were determined and correlated with fundamental characteristics. The results show clearly the effect of Al2O3 partial-monolayers as an internal barrier, which promotes structural inhomogeneity in the film and influences the fundamental properties of the nanolaminate. These properties are correlated with gas phase analysis that evidenced the poisoning effect of trimethylaluminum (TMA) pulse during the TiO2 layer growth, perturbing the growth per cycle and consequently the overall film thickness. It was shown that the changes in the fundamental properties of TiO2/Al2O3 nanolaminates had little influence on optical properties such as band gap and transmittance. However, in contrast, electrical properties as resistivity

  20. Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer Structure

    NASA Astrophysics Data System (ADS)

    Kim, Yu Jin; Park, Min Hyuk; Lee, Young Hwan; Kim, Han Joon; Jeon, Woojin; Moon, Taehwan; Do Kim, Keum; Jeong, Doo Seok; Yamada, Hiroyuki; Hwang, Cheol Seong

    2016-01-01

    Enhancement of capacitance by negative capacitance (NC) effect in a dielectric/ferroelectric (DE/FE) stacked film is gaining a greater interest. While the previous theory on NC effect was based on the Landau-Ginzburg-Devonshire theory, this work adopted a modified formalism to incorporate the depolarization effect to describe the energy of the general DE/FE system. The model predicted that the SrTiO3/BaTiO3 system will show a capacitance boost effect. It was also predicted that the 5 nm-thick Al2O3/150 nm-thick BaTiO3 system shows the capacitance boost effect with no FE-like hysteresis behavior, which was inconsistent with the experimental results; the amorphous-Al2O3/epitaxial-BaTiO3 system showed a typical FE-like hysteresis loop in the polarization – voltage test. This was due to the involvement of the trapped charges at the DE/FE interface, originating from the very high field across the thin Al2O3 layer when the BaTiO3 layer played a role as the NC layer. Therefore, the NC effect in the Al2O3/BaTiO3 system was frustrated by the involvement of reversible interface charge; the highly stored charge by the NC effect of the BaTiO3 during the charging period could not be retrieved during the discharging process because integral part of the polarization charge was retained within the system as a remanent polarization.

  1. Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer Structure.

    PubMed

    Kim, Yu Jin; Park, Min Hyuk; Lee, Young Hwan; Kim, Han Joon; Jeon, Woojin; Moon, Taehwan; Kim, Keum Do; Jeong, Doo Seok; Yamada, Hiroyuki; Hwang, Cheol Seong

    2016-01-08

    Enhancement of capacitance by negative capacitance (NC) effect in a dielectric/ferroelectric (DE/FE) stacked film is gaining a greater interest. While the previous theory on NC effect was based on the Landau-Ginzburg-Devonshire theory, this work adopted a modified formalism to incorporate the depolarization effect to describe the energy of the general DE/FE system. The model predicted that the SrTiO3/BaTiO3 system will show a capacitance boost effect. It was also predicted that the 5 nm-thick Al2O3/150 nm-thick BaTiO3 system shows the capacitance boost effect with no FE-like hysteresis behavior, which was inconsistent with the experimental results; the amorphous-Al2O3/epitaxial-BaTiO3 system showed a typical FE-like hysteresis loop in the polarization - voltage test. This was due to the involvement of the trapped charges at the DE/FE interface, originating from the very high field across the thin Al2O3 layer when the BaTiO3 layer played a role as the NC layer. Therefore, the NC effect in the Al2O3/BaTiO3 system was frustrated by the involvement of reversible interface charge; the highly stored charge by the NC effect of the BaTiO3 during the charging period could not be retrieved during the discharging process because integral part of the polarization charge was retained within the system as a remanent polarization.

  2. Interdiffusion in the MgO-Al2O3 spinel with or without some dopants

    NASA Astrophysics Data System (ADS)

    Zhang, P.; Debroy, T.; Seetharaman, S.

    1996-08-01

    With a view to seek an improved understanding of the DIMOX process, interdiffusion of polycrystalline MgO and Al2O3 in the temperature range 1473 to 1873 K was studied by diffusion couple experiments. The interdiffusivities in the spinel layer were calculated as functions of composition and temperature. The spinel portion of the phase diagram in the system MgO-Al2O3 was determined from carefully measured compositions at the phase boundaries, and the low temperature spinel region of the phase diagram was confirmed from the present results. For Zn2+ as dopant in alumina, the growth rate of spinel thickness seems to increase when compared with that of the diffusion couples without dopant. The samples containing Si4+ as dopant reveal the formation of a glass phase, and the effect of Si4+ on the diffusion process appears to be negligible.

  3. Effect of sulfur removal on Al2O3 scale adhesion

    NASA Technical Reports Server (NTRS)

    Smialek, James L.

    1991-01-01

    The effect of removing sulfur impurity on the adhesion of Al2O3 scale to NiCrAl was investigated in four experiments. It was found that removing sulfur to concentration less than 1 ppm per weight is sufficient to produce a very significant degree of alpha-Al2O3 scale adhesion to undoped NiCrAl alloys. Results of experiments show that repeated oxidation, and polishing after each oxidation cycle, of pure NiCrAl alloy lowered sulfur content from 10 to 2 ppm by weight (presumably by removing the segregated interfacial layer after each cycle); thinner samples became adherent after fewer oxidation-polishing cycles because of more limited supply of sulfur. It was found that spalling in subsequent cyclic oxidation tests was a direct function of the initial sulfur content. The transition between the adherent and nonadherent behavior was modeled in terms of sulfur flux, sulfur content, and sulfur segregation.

  4. Theory of the clean and hydrogenated Al2O3(0001)-(1×1) surfaces

    NASA Astrophysics Data System (ADS)

    Felice, Rosa Di; Northrup, John E.

    1999-12-01

    We present the results of a first principles investigation of the equilibrium properties of c-plane α-Al2O3 surfaces. The stable structure for the 1×1 clean surface is Al terminated with a stoichiometric composition, while other terminations are unstable independent of surface preparation conditions. We discuss the implications of our results in the frame of possible extended reconstructions. For 1 monolayer of H coverage, we find that the preferred structure has OH dimers both perpendicular and nearly parallel to the surface. H-terminated surfaces may form in suitable preparation conditions. We discuss our results in terms of water adsorption and atomic layer epitaxy of α-Al2O3(0001).

  5. Effect of hydrogen on Al2O3/Cu interfacial structure and adhesion

    NASA Astrophysics Data System (ADS)

    Wang, Xiao-Gang; Smith, John R.; Scheffler, Matthias

    2002-08-01

    We have carried out an ab initio investigation of the effect of hydrogen on the Al2O3/Cu interface. H on the Al2O3 surface can play a bridging role in the formation of the interface. The interfacial OH bond is stable in the presence of two atomic layers of Cu. In contrast, an Al monolayer would dissociate the surface OH bond. For thicker Cu, one-third of a monolayer of H remains stable in the interface, lowering the work of separation by 2.3 J/m2. The interfacial work of separation remains larger than that of bulk Cu, however. These results are consistent with available experimental data.

  6. Protective Al2O3 scale formation on NbAl3-base alloys

    NASA Technical Reports Server (NTRS)

    Doychak, J.; Hebsur, M. G.

    1991-01-01

    The oxidation of NbAl3 with additions of Cr and Y was studied to determine the mechanisms of the beneficial effects of these elements upon oxidation. Cr additions to the binary NbAl3 alloy of up to 6.8 at. percent reduced the scale growth rates and promoted alpha-Al2O3 formation over much longer times relative to binary NbAl3. A major effect of Cr is to form a layer of AlNbCr at the metal/scale interface, which is inherently more oxidation-resistant than the matrix alloy in the long term. Yttrium additions to a Cr-containing alloy improved the scale growth rate and adherence and changed the scale microstructure to mimic that of a typical protective Al2O3 scale.

  7. Al2O3-based nanofluids: a review

    PubMed Central

    2011-01-01

    Ultrahigh performance cooling is one of the important needs of many industries. However, low thermal conductivity is a primary limitation in developing energy-efficient heat transfer fluids that are required for cooling purposes. Nanofluids are engineered by suspending nanoparticles with average sizes below 100 nm in heat transfer fluids such as water, oil, diesel, ethylene glycol, etc. Innovative heat transfer fluids are produced by suspending metallic or nonmetallic nanometer-sized solid particles. Experiments have shown that nanofluids have substantial higher thermal conductivities compared to the base fluids. These suspended nanoparticles can change the transport and thermal properties of the base fluid. As can be seen from the literature, extensive research has been carried out in alumina-water and CuO-water systems besides few reports in Cu-water-, TiO2-, zirconia-, diamond-, SiC-, Fe3O4-, Ag-, Au-, and CNT-based systems. The aim of this review is to summarize recent developments in research on the stability of nanofluids, enhancement of thermal conductivities, viscosity, and heat transfer characteristics of alumina (Al2O3)-based nanofluids. The Al2O3 nanoparticles varied in the range of 13 to 302 nm to prepare nanofluids, and the observed enhancement in the thermal conductivity is 2% to 36%. PMID:21762528

  8. Al2O3-based nanofluids: a review.

    PubMed

    Sridhara, Veeranna; Satapathy, Lakshmi Narayan

    2011-07-16

    Ultrahigh performance cooling is one of the important needs of many industries. However, low thermal conductivity is a primary limitation in developing energy-efficient heat transfer fluids that are required for cooling purposes. Nanofluids are engineered by suspending nanoparticles with average sizes below 100 nm in heat transfer fluids such as water, oil, diesel, ethylene glycol, etc. Innovative heat transfer fluids are produced by suspending metallic or nonmetallic nanometer-sized solid particles. Experiments have shown that nanofluids have substantial higher thermal conductivities compared to the base fluids. These suspended nanoparticles can change the transport and thermal properties of the base fluid. As can be seen from the literature, extensive research has been carried out in alumina-water and CuO-water systems besides few reports in Cu-water-, TiO2-, zirconia-, diamond-, SiC-, Fe3O4-, Ag-, Au-, and CNT-based systems. The aim of this review is to summarize recent developments in research on the stability of nanofluids, enhancement of thermal conductivities, viscosity, and heat transfer characteristics of alumina (Al2O3)-based nanofluids. The Al2O3 nanoparticles varied in the range of 13 to 302 nm to prepare nanofluids, and the observed enhancement in the thermal conductivity is 2% to 36%.

  9. Paramagnetic Spins on -Al2O3 with Varied Surface Termination

    NASA Astrophysics Data System (ADS)

    Ray, Keith; Lee, Donghwa; Adelstein, Nicole; Dubois, Jonathan; Lordi, Vincenzo

    Superconducting qubits (SQs) are promising building blocks for a quantum computer, however, coherence in SQs is reduced by unintended coupling to magnetic noise sources. The microscopic origins of the magnetic noise have not been satisfactorily characterized. Building on previous computational studies of magnetic spins induced by molecules adsorbed on bare Al terminated Al2O3, we present a density functional theory investigation of magnetic noise associated with other Al2O3 surfaces likely to be encountered in experiment. We calculate the exchange interaction between native defects and adsorbed molecules, as well as the magnetic states energy splitting and anisotropy, on fully hydroxylated Al2O3, with and without a water over-layer. We also present simulated x-ray adsorption and x-ray magnetic circular dichroism spectra of these systems with the aim of aiding experimental surface characterization. This work was performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under contract DE-AC52-07NA27344.

  10. Space-charge-controlled field emission model of current conduction through Al2O3 films

    NASA Astrophysics Data System (ADS)

    Hiraiwa, Atsushi; Matsumura, Daisuke; Kawarada, Hiroshi

    2016-02-01

    This study proposes a model for current conduction in metal-insulator-semiconductor (MIS) capacitors, assuming the presence of two sheets of charge in the insulator, and derives analytical formulae of field emission (FE) currents under both negative and positive bias. Since it is affected by the space charge in the insulator, this particular FE differs from the conventional FE and is accordingly named the space-charge-controlled (SCC) FE. The gate insulator of this study was a stack of atomic-layer-deposition Al2O3 and underlying chemical SiO2 formed on Si substrates. The current-voltage (I-V) characteristics simulated using the SCC-FE formulae quantitatively reproduced the experimental results obtained by measuring Au- and Al-gated Al2O3/SiO2 MIS capacitors under both biases. The two sheets of charge in the Al2O3 films were estimated to be positive and located at a depth of greater than 4 nm from the Al2O3/SiO2 interface and less than 2 nm from the gate. The density of the former is approximately 1 × 1013 cm-2 in units of electronic charge, regardless of the type of capacitor. The latter forms a sheet of dipoles together with image charges in the gate and hence causes potential jumps of 0.4 V and 1.1 V in the Au- and Al-gated capacitors, respectively. Within a margin of error, this sheet of dipoles is ideally located at the gate/Al2O3 interface and effectively reduces the work function of the gate by the magnitude of the potential jumps mentioned above. These facts indicate that the currents in the Al2O3/SiO2 MIS capacitors are enhanced as compared to those in ideal capacitors and that the currents in the Al-gated capacitors under negative bias (electron emission from the gate) are more markedly enhanced than those in the Au-gated capacitors. The larger number of gate-side dipoles in the Al-gated capacitors is possibly caused by the reaction between the Al and Al2O3, and therefore gate materials that do not react with underlying gate insulators should be chosen

  11. Impurity Enhancement of Al_2O_3/Al Adhesion

    NASA Astrophysics Data System (ADS)

    Wang, Xiao-Gang; Smith, John R.; Zhang, Wenqing; Evans, Anthony

    2003-03-01

    Our first-principles computations indicate that the clean Al_2O_3/Al interface is relatively weak - weaker than bulk Al. Fracture experiments reveal that the interface is relatively strong with observed failure in bulk Al, however. This paradox is resolved via doping effects of the common impurity C. We have found that only 1/3 of a monolayer of carbon segregated to the interface can increase the work of separation by a factor of 3. The resulting strong interface is consistent with fracture experiments. It arises due to void formation in the interface, which provides low-strain sites for the carbon to segregate to. The degree of void formation is consistent with the relatively high heat of oxide formation of Al.

  12. Effect of Al2O3 encapsulation on multilayer MoSe2 thin-film transistors

    NASA Astrophysics Data System (ADS)

    Lee, Hyun Ah; Yeoul Kim, Seong; Kim, Jiyoung; Choi, Woong

    2017-03-01

    We report the effect of Al2O3 encapsulation on the device performance of multilayer MoSe2 thin-film transistors based on statistical investigation of 29 devices with a SiO2 bottom-gate dielectric. On average, Al2O3 encapsulation by atomic layer deposition increased the field-effect mobility from 10.1 cm2 V‑1 s‑1 to 14.8 cm2 V‑1 s‑1, decreased the on/off-current ratio from 8.5  ×  105 to 2.3  ×  105 and negatively shifted the threshold voltage from  ‑1.1 V to  ‑8.1 V. Calculation based on the Y-function method indicated that the enhancement of intrinsic carrier mobility occurred independently of the reduction of contact resistance after Al2O3 encapsulation. Furthermore, contrary to previous reports in the literature, we observe a negligible effect of thermal annealing on contact resistance and carrier mobility during the atomic layer deposition of Al2O3. These results demonstrate that Al2O3 encapsulation is a useful method for improving the carrier mobility of multilayer MoSe2 transistors, providing important implications on the application of MoSe2 and other 2D materials into high-performance transistors.

  13. Antimicrobial effect of Al2O3, Ag and Al2O3/Ag thin films on Escherichia coli and Pseudomonas putida

    NASA Astrophysics Data System (ADS)

    Angelov, O.; Stoyanova, D.; Ivanova, I.; Todorova, S.

    2016-10-01

    The influence of Al2O3, Ag and Al2O3/Ag thin films on bacterial growth of Gramnegative bacteria Pseudomonas putida and Escherichia coli is studied. The nanostructured thin films are deposited on glass substrates without intentional heating through r.f. magnetron sputtering in Ar atmosphere of Al2O3 and Ag targets or through sequential sputtering of Al2O3 and Ag targets, respectively. The individual Ag thin films (thickness 8 nm) have a weak bacteriostatic effect on Escherichia coli expressed as an extended adaptive phase of the bacteria up to 5 hours from the beginning of the experiment, but the final effect is only 10 times lower bacterial density than in the control. The individual Al2O3 film (20 nm) has no antibacterial effect against two strains E. coli - industrial and pathogenic. The Al2O3/Ag bilayer films (Al2O3 20 nm/Ag 8 nm) have strong bactericidal effect on Pseudomonas putida and demonstrate an effective time of disinfection for 2 hours. The individual films Al2O3 and Ag have not pronounced antibacterial effect on Pseudomonas putida. A synergistic effect of Al2O3/Ag bilayer films in formation of oxidative species on the surface in contact with the bacterial suspension could be a reason for their antimicrobial effect on E. coli and P. putida.

  14. Characteristics of ethylene glycol-Al2O3 nanofluids prepared by utilizing Al2O3 nanoparticles synthesized from local bauxite

    NASA Astrophysics Data System (ADS)

    Syarif, D. G.

    2016-11-01

    Nanoparticles of Al2O3 have been synthesized from local bauxite mineral, and ethylene glycol (EG)-Al2O3 nanofluids have been prepared. Powder Al(OOH) was extracted from local bauxite using bayer process, and heated at 600°C for 3 hours to get Al2O3 nanoparticles. XRD analyses showed that the Al2O3 nanoparticles crystallizes in γ-Al2O3 with crystallite size of 4.12 nm. The specific surface area of the ACO3 nanoparticles was 296.72 m2/gr. Viscosity of the EG-Al2O3 nanofluids was temperature dependent, and decreased with increasing temperature. The viscosity of the nanofluids increased with the concentration of the Al2O3 nanoparticles. Meanwhile, Critical Heat Flux (CHF) enhancement of the nanofluids increased with the concentration of the Al2O3 nanoparticles. The largest CHF enhancement was 54% at Al2O3 concentration of 0.095 vol %.

  15. Ultra-low thermal conductivity in W/Al2O3 nanolaminates.

    PubMed

    Costescu, R M; Cahill, D G; Fabreguette, F H; Sechrist, Z A; George, S M

    2004-02-13

    Atomic layer deposition and magnetron sputter deposition were used to synthesize thin-film multilayers of W/Al(2)O(3). With individual layers only a few nanometers thick, the high interface density produced a strong impediment to heat transfer, giving rise to a thermal conductivity of approximately 0.6 watts per meter per kelvin. This result suggests that high densities of interfaces between dissimilar materials may provide a route for the production of thermal barriers with ultra-low thermal conductivity.

  16. Assimilation Behavior of Calcium Ferrite and Calcium Diferrite with Sintered Al2O3 and MgO

    NASA Astrophysics Data System (ADS)

    Long, Hongming; Wu, Xuejian; Chun, Tiejun; Di, Zhanxia; Yu, Bin

    2016-10-01

    In this study, the assimilation behaviors between calcium ferrite (CF), calcium diferrite (CF2) and sintered Al2O3, and MgO were explored by an improved sessile drop technique, and the interfacial microstructure was discussed. The results indicated that the apparent contact angles of CF slag on Al2O3 and MgO substrate were 15.7 and 5.5 deg, and the apparent contact angles of CF2 slag on Al2O3 and MgO substrate were 17.9 and 7.2 deg, respectively. Namely, CF and CF2 slag were wetting well with Al2O3 and MgO substrate. The dissolution of Al2O3 substrate into the CF and CF2 slag was found to be the driving force of the wetting process. For the CF-MgO and CF2-MgO substrate systems, CaO contrarily distributed with MgO after wetting. For the CF-MgO system, after wetting, the slag was composed of CF and C2F, and most of the Fe2O3 permeated into substrate and formed two permeating layers.

  17. Comparing the Thermodynamic Behaviour of Al(1)+ZrO2(s) to Al(1)+Al2O3(s)

    NASA Technical Reports Server (NTRS)

    Copland, Evan

    2004-01-01

    In an effort to better determine the thermodynamic properties of Al(g) and Al2O(g). the vapor in equilibrium with Al(l)+ZrO2(s) was compared to the vapor in equilibrium with Al(l)+Al2O3(s) over temperature range 1197-to-1509K. The comparison was made directly by Knudsen effusion-cell mass spectrometry with an instrument configured for a multiple effusion-cell vapor source (multi-cell KEMS). Second law enthalpies of vaporization of Al(g) and Al2O(g) together with activity measurements show that Al(l)+ZrO2(s) is thermodynamically equivalent to Al(l)+Al2O3(s), indicating Al(l) remained pure and Al2O3(s) was present in the ZrO2-cell. Subsequent observation of the Al(l)/ZrO2 and vapor/ZrO2 interfaces revealed a thin Al2O3-layer had formed, separating the ZrO2-cell from Al(l) and Al(g)+Al2O(g), effectively transforming it into an Al2O3 effusion-cell. This behavior agrees with recent observations made for Beta-NiAl(Pt) alloys measured in ZrO2 effusion-cell.

  18. Effects of buffered HF cleaning on metal-oxide-semiconductor interface properties of Al2O3/InAs/GaSb structures

    NASA Astrophysics Data System (ADS)

    Nishi, Koichi; Yokoyama, Masafumi; Yokoyama, Haruki; Hoshi, Takuya; Sugiyama, Hiroki; Takenaka, Mitsuru; Takagi, Shinichi

    2015-06-01

    We studied the impact of buffered HF (BHF) cleaning on the interface properties of Al2O3/InAs/GaSb metal-oxide-semiconductor (MOS) structures fabricated by the ex-situ surface cleaning process. The Al2O3/InAs/GaSb MOS structures fabricated with BHF cleaning exhibited lower Dit values than those fabricated with sulfur passivation. In addition, the Al2O3/InAs/GaSb MOS structures fabricated with BHF cleaning were robust with respect to the MOS field-effect transistor fabrication process by using W gate metal with PMA in the 250-300 °C range.

  19. CO2 gas detection properties of a TIO2/Al2O3 heterostructure under UV light irradiation

    NASA Astrophysics Data System (ADS)

    Karaduman, Irmak; Demir, Mehmet; Yıldız, Dilber Esra; Acar, Selim

    2015-05-01

    Al/TiO2/p-Si and Al/TİO2/Al2O3/p-Si samples were prepared using the atomic layer deposition method (ALD) and their gas sensing properties were investigated. The electrical properties of the samples were studied using a two probe method in the temperature range 25-230 °C and at room temperature UV conditions. The TiO2/Al2O3 heterojunction sample exhibited an excellent gas sensing response to CO2 gas at room temperature and improved the effect of UV light irradiation. The results showed that heterostructures helped to improve the gas sensor properties, affected the sensing at room temperature and thus guided the design of photocatalysts. The TiO2/Al2O3 heterojunction prepared using this method can be used as a material for semiconductor gas sensors detecting poisonous gases like CO2 at room temperature with high sensitivity and selectivity.

  20. Inelastic electron tunneling spectroscopy study of ultrathin Al2O3-TiO2 dielectric stack on Si

    NASA Astrophysics Data System (ADS)

    Liu, Zuoguang; Cui, Sharon; Kornblum, Lior; Eizenberg, Moshe; Chang, Ming-Feng; Ma, T. P.

    2010-11-01

    We report the properties of an ultrathin Al2O3-TiO2 dielectric stack with the equivalent-oxide thickness =1.0 nm. The stack exhibits nondiscernable interfacial layer on Si, and absence of serious Al2O3-TiO2 intermixing. Inelastic electron tunneling spectroscopy (IETS) has been used to provide a wealth of information concerning the phonons, bonding vibration modes, and traps in the Al2O3-TiO2 gate dielectric stack as well as its interfaces in a metal-oxide-Si structure. The IETS spectra before and after forming gas annealing suggest that the reduction of traps is related to the formation of Si-H bonds at the oxide-Si interface.

  1. Porous α-Al2O3 thermal barrier coatings with dispersed Pt particles prepared by cathode plasma electrolytic deposition

    NASA Astrophysics Data System (ADS)

    Wang, Peng; He, Ye-dong; Deng, Shun-jie; Zhang, Jin

    2016-01-01

    Porous α-Al2O3 thermal barrier coatings (TBCs) containing dispersed Pt particles were prepared by cathode plasma electrolytic deposition (CPED). The influence of the Pt particles on the microstructure of the coatings and the CPED process were studied. The prepared coatings were mainly composed of α-Al2O3. The average thickness of the coatings was approximately 100 μm. Such single-layer TBCs exhibited not only excellent high-temperature cyclic oxidation and spallation resistance, but also good thermal insulation properties. Porous α-Al2O3 TBCs inhibit further oxidation of alloy substrates because of their extremely low oxygen diffusion rate, provide good thermal insulation because of their porous structure, and exhibit excellent mechanical properties because of the toughening effect of the Pt particles and because of stress relaxation induced by deformation of the porous structure.

  2. Microstructural development of protective Al2O3 scales

    NASA Technical Reports Server (NTRS)

    Smialek, J. L.

    1984-01-01

    Microstructural characteristics of Al2O3 scales grown as protective coatings on NiCrAl alloys used in jet engines are described. The alloys were pure or doped with 0.3 percent Zr or Y and oxidized in 1 atm air at 1100 C for 0.1, 1 or 20.0 hr. The scales were then examined under a microscope. Transient epitaxial scales, formed during the 0.1 hr treatment and containing Ni, Cr and Al, consisted of a mosaic of subgrains and precipitates of different phases. The Y and Zr dopants had no effect on the nucleation site locations. The appearance of intergranular porosity at 0.1 hr was exacerbated after the 1 hr treatment. A bimodal void distribution appeared after 20 hr, when no porosity was evident. The detection of local areas of preferred orientation is taken as a spur to further studies of scale growth to gain control of the grain size or even to produce single crystal scales.

  3. Radiation endurance in Al2O3 nanoceramics

    NASA Astrophysics Data System (ADS)

    García Ferré, F.; Mairov, A.; Ceseracciu, L.; Serruys, Y.; Trocellier, P.; Baumier, C.; Kaïtasov, O.; Brescia, R.; Gastaldi, D.; Vena, P.; Beghi, M. G.; Beck, L.; Sridharan, K.; di Fonzo, F.

    2016-09-01

    The lack of suitable materials solutions stands as a major challenge for the development of advanced nuclear systems. Most issues are related to the simultaneous action of high temperatures, corrosive environments and radiation damage. Oxide nanoceramics are a promising class of materials which may benefit from the radiation tolerance of nanomaterials and the chemical compatibility of ceramics with many highly corrosive environments. Here, using thin films as a model system, we provide new insights into the radiation tolerance of oxide nanoceramics exposed to increasing damage levels at 600 °C –namely 20, 40 and 150 displacements per atom. Specifically, we investigate the evolution of the structural features, the mechanical properties, and the response to impact loading of Al2O3 thin films. Initially, the thin films contain a homogeneous dispersion of nanocrystals in an amorphous matrix. Irradiation induces crystallization of the amorphous phase, followed by grain growth. Crystallization brings along an enhancement of hardness, while grain growth induces softening according to the Hall-Petch effect. During grain growth, the excess mechanical energy is dissipated by twinning. The main energy dissipation mechanisms available upon impact loading are lattice plasticity and localized amorphization. These mechanisms are available in the irradiated material, but not in the as-deposited films.

  4. Al-Al2O3-Pd junction hydrogen sensor

    NASA Astrophysics Data System (ADS)

    Okuyama, K.; Takinami, N.; Chiba, Y.; Ohshima, S.; Kambe, S.

    1994-07-01

    Al-Al2O3-Pd MIM (metal insulator metal) junctions fabricated on a glass substrate were tested as hydrogen sensors. The I-V (current versus voltage) characteristics of the junctions were measured at room temperature in a vacuum of 10-5 Torr and in H2 gas of 10-2-100 Torr. A significant increase in the current was observed upon introduction of H2 gas. This phenomenon is believed to occur due to the work function lowering of the hydrogen-absorbed Pd top electrode. The rise time was on the order of minutes, while the recovery time when hydrogen was purged was more than 20 h. However, when the junction was placed in an oxidizing ambient such as air, the recovery time was drastically reduced to the order of minutes, indicating that the device is operative as a hydrogen sensor in the atmospheric ambient. Hydrogen adsorption and desorption behavior of the Pd film was also investigated using a Pd coated quartz microbalance, and the results explained the current response of the Pd MIM junction to hydrogen in the presence of oxygen.

  5. The thermodynamic properties of hydrated -Al2O3 nanoparticles

    SciTech Connect

    Spencer, Elinor; Huang, Baiyu; Parker, Stewart F.; Kolesnikov, Alexander I; Ross, Dr. Nancy; Woodfield, Brian

    2013-01-01

    In this paper we report a combined calorimetric and inelastic neutron scattering (INS) study of hydrated -Al2O3 ( -alumina) nanoparticles. These complementary techniques have enabled a comprehensive evaluation of the thermodynamic properties of this technological and industrially important metal oxide to be achieved. The isobaric heat capacity (Cp) data presented herein provide further critical insights into the much-debated chemical composition of -alumina nanoparticles. Furthermore, the isochoric heat capacity (Cv) of the surface water, which is so essential to the stability of all metal-oxides at the nanoscale, has been extracted from the high-resolution INS data and differs significantly from that of ice Ih due to the dominating influence of strong surface-water interactions. This study also encompassed the analysis of four -alumina samples with differing pore diameters [4.5 (1), 13.8 (2), 17.9 (3), and 27.2 nm (4)], and the results obtained allow us to unambiguously conclude that the water content and pore size have no influence on the thermodynamic behaviour of hydrated -alumina nanoparticles.

  6. Radiation endurance in Al2O3 nanoceramics

    PubMed Central

    García Ferré, F.; Mairov, A.; Ceseracciu, L.; Serruys, Y.; Trocellier, P.; Baumier, C.; Kaïtasov, O.; Brescia, R.; Gastaldi, D.; Vena, P.; Beghi, M. G.; Beck, L.; Sridharan, K.; Di Fonzo, F.

    2016-01-01

    The lack of suitable materials solutions stands as a major challenge for the development of advanced nuclear systems. Most issues are related to the simultaneous action of high temperatures, corrosive environments and radiation damage. Oxide nanoceramics are a promising class of materials which may benefit from the radiation tolerance of nanomaterials and the chemical compatibility of ceramics with many highly corrosive environments. Here, using thin films as a model system, we provide new insights into the radiation tolerance of oxide nanoceramics exposed to increasing damage levels at 600 °C –namely 20, 40 and 150 displacements per atom. Specifically, we investigate the evolution of the structural features, the mechanical properties, and the response to impact loading of Al2O3 thin films. Initially, the thin films contain a homogeneous dispersion of nanocrystals in an amorphous matrix. Irradiation induces crystallization of the amorphous phase, followed by grain growth. Crystallization brings along an enhancement of hardness, while grain growth induces softening according to the Hall-Petch effect. During grain growth, the excess mechanical energy is dissipated by twinning. The main energy dissipation mechanisms available upon impact loading are lattice plasticity and localized amorphization. These mechanisms are available in the irradiated material, but not in the as-deposited films. PMID:27653832

  7. Surface Crystallization of a MgO/Y2O3/SiO2/Al2O3/ZrO2 Glass: Growth of an Oriented β-Y2Si2O7 Layer and Epitaxial ZrO2

    NASA Astrophysics Data System (ADS)

    Wisniewski, Wolfgang; Seidel, Sabrina; Patzig, Christian; Rüssel, Christian

    2017-03-01

    The crystallization behavior of a glass with the composition 54.7 SiO2·10.9 Al2O3·15.0 MgO·3.4 ZrO2·16.0 Y2O3 is studied using X-ray diffraction (XRD), scanning electron microscopy (SEM) including electron backscatter diffraction (EBSD) and (scanning) transmission electron microscopy [(S)TEM] including energy-dispersive X-ray spectrometry (EDXS). This glass shows the sole surface crystallization of four different yttrium silicates of the composition Y2Si2O7 (YS). The almost simultaneous but independent nucleation of α-, β-, δ-, and ε-YS at the surface is followed by growth into the bulk, where ε-YS quickly dominates a first crystallized layer. An accumulation of Mg at the growth front probably triggers a secondary nucleation of β-YS, which forms a thin compact layer before fragmenting into a highly oriented layer of fine grained crystals occupying the remaining bulk. The residual glass between the YS growth structures allows the crystallization of indialite, yttrium stabilized ZrO2 (Y-ZrO2) and very probably μ-cordierite during cooling. Hence, this glass basically shows the inverted order of crystallization observed in other magnesium yttrium alumosilicate glasses containing less Y2O3. An epitaxial relationship between Y-ZrO2 and ε-YS is proven and multiple twinning relationships occur in the YS phases.

  8. Surface Crystallization of a MgO/Y2O3/SiO2/Al2O3/ZrO2 Glass: Growth of an Oriented β-Y2Si2O7 Layer and Epitaxial ZrO2

    PubMed Central

    Wisniewski, Wolfgang; Seidel, Sabrina; Patzig, Christian; Rüssel, Christian

    2017-01-01

    The crystallization behavior of a glass with the composition 54.7 SiO2·10.9 Al2O3·15.0 MgO·3.4 ZrO2·16.0 Y2O3 is studied using X-ray diffraction (XRD), scanning electron microscopy (SEM) including electron backscatter diffraction (EBSD) and (scanning) transmission electron microscopy [(S)TEM] including energy-dispersive X-ray spectrometry (EDXS). This glass shows the sole surface crystallization of four different yttrium silicates of the composition Y2Si2O7 (YS). The almost simultaneous but independent nucleation of α-, β-, δ-, and ε-YS at the surface is followed by growth into the bulk, where ε-YS quickly dominates a first crystallized layer. An accumulation of Mg at the growth front probably triggers a secondary nucleation of β-YS, which forms a thin compact layer before fragmenting into a highly oriented layer of fine grained crystals occupying the remaining bulk. The residual glass between the YS growth structures allows the crystallization of indialite, yttrium stabilized ZrO2 (Y-ZrO2) and very probably μ-cordierite during cooling. Hence, this glass basically shows the inverted order of crystallization observed in other magnesium yttrium alumosilicate glasses containing less Y2O3. An epitaxial relationship between Y-ZrO2 and ε-YS is proven and multiple twinning relationships occur in the YS phases. PMID:28281661

  9. Superconductivity of Al/Al2O3 interface formed by shock-wave pressure

    NASA Astrophysics Data System (ADS)

    Palnichenko, A. V.; Shakhrai, D. V.; Avdonin, V. V.; Vyaselev, O. M.; Khasanov, S. S.

    2015-05-01

    A mixture of Al and α -Al2O3 has been subjected to a shock-wave pressure of ≃ 170 kbar, followed by vacuum-encapsulating and quenching of the product to liquid nitrogen. The ac magnetic susceptibility measurements of the samples have revealed metastable superconductivity with Tc ≈ 37 K, characterized by glassy dynamics of the shielding currents below Tc . Comparison of the ac susceptibility and the dc magnetization measurements infers that the superconductivity arises within the interfacial granular layer formed between metallic Al and its oxide due to the shock-wave treatment.

  10. Superconductivity of Al/Al2O3 interface formed under shock-wave conditions

    NASA Astrophysics Data System (ADS)

    Shakhray, D. V.; Avdonin, V. V.; Palnichenko, A. V.; Vyaselev, O. M.

    2015-11-01

    A mixture of powdered Al and Al2O3 has been subjected to a shock-wave pressure of ≈ 170 kbar, followed by vacuum-encapsulating and quenching of the product to liquid nitrogen. The ac magnetic susceptibility measurements of the samples have revealed metastable superconductivity with Tc ≈ 37 K, characterized by glassy dynamics of the shielding currents below Tc. Comparison of the ac susceptibility and the dc magnetization measurements infers that the superconductivity arises within the interfacial granular layer formed between metallic Al and its oxide due to the shock-wave treatment.

  11. Head-up display using an inclined Al2O3 column array.

    PubMed

    Cho, Wen-Hao; Lee, Chao-Te; Kei, Chi-Chung; Liao, Bo-Huei; Chiang, Donyau; Lee, Cheng-Chung

    2014-02-01

    An orderly inclined Al2O3 column array was fabricated by atomic layer deposition and sequential electron beam evaporation using a hollow nanosphere template. The transmittance spectra at various angles of incidence were obtained through the use of a Perkin-Elmer Lambda 900 UV/VIS/NIR spectrometer. The inclined column array could display the image information through a scattering mechanism and was transparent at high viewing angles along the deposition plane. This characteristic of the inclined column array gives it potential for applications in head-up displays in the automotive industry.

  12. Nitridation of Al2O3 surfaces: chemical and structural change triggered by oxygen desorption.

    PubMed

    Akiyama, Toru; Saito, Yasutaka; Nakamura, Kohji; Ito, Tomonori

    2013-01-11

    We present theoretical investigations that clarify elemental nitridation processes of corundum Al2O3(0001) and (1102) surfaces. The calculations within the density functional theory framework reveal that the structures with substitutional N atoms beneath the surface are stabilized under nitridation conditions. We also find that the desorption of O atoms at the topmost layer induces outward diffusion of O atoms as well as inward diffusion of N atoms, leading to the transformation into AlN films. The kinetic Monte Carlo simulations in conjunction with density functional theory results indeed observe a dependence of these chemical and structural changes on temperature and pressure.

  13. Assembly of self-assembled monolayer-coated Al2O3 on TiO2 thin films for the fabrication of renewable superhydrophobic-superhydrophilic structures.

    PubMed

    Nishimoto, Shunsuke; Sekine, Hitomi; Zhang, Xintong; Liu, Zhaoyue; Nakata, Kazuya; Murakami, Taketoshi; Koide, Yoshihiro; Fujishima, Akira

    2009-07-07

    A renewable superhydrophobic-superhydrophilic pattern with a minimum dimension of 50 microm is prepared from octadecyltrimethoxysilane self-assembled monolayer-covered superhydrophobic Al2O3 overlayers on a superhydrophilic TiO2 surface via self-assembly and calcination of boehmite (AlOOH.nH2O) particles. The resulting Al2O3 layer plays dual roles as a superhydrophobic layer and as a UV-blocking layer for the underlying TiO2.

  14. Some TEM observations of Al2O3 scales formed on NiCrAl alloys

    NASA Technical Reports Server (NTRS)

    Smialek, J.; Gibala, R.

    1979-01-01

    The microstructural development of Al2O3 scales on NiCrAl alloys has been examined by transmission electron microscopy. Voids were observed within grains in scales formed on a pure NiCrAl alloy. Both voids and oxide grains grew measurably with oxidation time at 1100 C. The size and amount of porosity decreased towards the oxide-metal growth interface. The voids resulted from an excess number of oxygen vacancies near the oxidemetal interface. Short-circuit diffusion paths were discussed in reference to current growth stress models for oxide scales. Transient oxidation of pure, Y-doped, and Zr-doped NiCrAl was also examined. Oriented alpha-(Al, Cr)2O3 and Ni(Al, Cr)2O4 scales often coexisted in layered structures on all three alloys. Close-packed oxygen planes and directions in the corundum and spinel layers were parallel. The close relationship between oxide layers provided a gradual transition from initial transient scales to steady state Al2O3 growth.

  15. Some TEM observations of Al2O3 scales formed on NiCrAl alloys

    NASA Technical Reports Server (NTRS)

    Smialek, J.; Gibala, R.

    1979-01-01

    The microstructural development of Al2O3 scales on NiCrAl alloys has been examined by transmission electron microscopy. Voids have been observed within grains in scales formed on a pure NiCrAl alloy. Both voids and oxide grains grew measurably with oxidation time at 1100 C. The size and amount of porosity decreased towards the oxide-metal growth interface. It was postulated that the voids resulted from an excess number of oxygen vacancies near the oxide-metal interface. Short-circuit diffusion paths were discussed in reference to current growth stress models for oxide scales. Transient oxidations of pure, Y-doped, and Zr-doped NiCrAl was also examined. Oriented alpha-(Al,Cr)2O3 and Ni(Al,Cr)2O4 scales often coexisted in layered structures on all three alloys. Close-packed oxygen planes and directions in the corundum and spinel layers were parallel. The close relationships between oxide layers provided a gradual transition from initial transient scales to steady state Al2O3 growth.

  16. Electrodeposition of Ni-Al2O3 nano composite coating and evaluation of wear characteristics

    NASA Astrophysics Data System (ADS)

    Raghavendra, C. R.; Basavarajappa, S.; Sogalad, Irappa

    2016-09-01

    Electrodeposition is one of the most technologically feasible and economically superior technique for producing metallic coating. The advancement in the application of nano particles has grabbed the attention in all fields of engineering. In this present study an attempt has been made on the nano particle composite coating on aluminium substrate by electrodeposition process. The aluminium surface requires a specific pre-treatment for better adherence of coating. In light of this a thin zinc layer is coated on the aluminium substrate by electroless process. This layer offers protection against oxidation thus prevents the formation of a native oxide layer. In this work Ni-Al2O3 composite coating were successfully coated by varying the process parameters such as bath temperature, current density and particle loading. The experimentation was performed using central composite design based 20 trials of experiments. The effect of process parameters on surface morphology and wear behavior was studied. The results shown a better wear resistance of Ni-Al2O3 composite electrodeposited coating compared to Ni coating. The particle loading and interaction effect of current density with temperature has greater significant effect on wear rate followed by the bath temperature. The decrease in wear rate was observed with the increased current density and temperature.

  17. Nucleation and growth mechanisms of Al2O3 atomic layerdeposition on synthetic polycrystalline MoS2.

    PubMed

    Zhang, H; Chiappe, D; Meersschaut, J; Conard, T; Franquet, A; Nuytten, T; Mannarino, M; Radu, I; Vandervorst, W; Delabie, A

    2017-02-07

    Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are of great interest for applications in nano-electronic devices. Their incorporation requires the deposition of nm-thin and continuous high-k dielectric layers on the 2D TMDs. Atomic layer deposition (ALD) of high-k dielectric layers is well established on Si surfaces: the importance of a high nucleation density for rapid layer closure is well known and the nucleation mechanisms have been thoroughly investigated. In contrast, the nucleation of ALD on 2D TMD surfaces is less well understood and a quantitative analysis of the deposition process is lacking. Therefore, in this work, we investigate the growth of Al2O3 (using Al(CH3)3/H2O ALD) on MoS2 whereby we attempt to provide a complete insight into the use of several complementary characterization techniques, including X-ray photo-electron spectroscopy, elastic recoil detection analysis, scanning electron microscopy, and time-of-flight secondary ion mass spectrometry. To reveal the inherent reactivity of MoS2, we exclude the impact of surface contamination from a transfer process by direct Al2O3 deposition on synthetic MoS2 layers obtained by a high temperature sulfurization process. It is shown that Al2O3 ALD on the MoS2 surface is strongly inhibited at temperatures between 125°C and 300°C, with no growth occurring on MoS2 crystal basal planes and selective nucleation only at line defects or grain boundaries at MoS2 top surface. During further deposition, the as-formed Al2O3 nano-ribbons grow in both vertical and lateral directions. Eventually, a continuous Al2O3 film is obtained by lateral growth over the MoS2 crystal basal plane, with the point of layer closure determined by the grain size at the MoS2 top surface and the lateral growth rate. The created Al2O3/MoS2 interface consists mainly of van der Waals interactions. The nucleation is improved by contributions of reversible adsorption on the MoS2 basal planes by using low

  18. Epitaxial growth and electric properties of γ-Al2O3(110) films on β-Ga2O3(010) substrates

    NASA Astrophysics Data System (ADS)

    Hattori, Mai; Oshima, Takayoshi; Wakabayashi, Ryo; Yoshimatsu, Kohei; Sasaki, Kohei; Masui, Takekazu; Kuramata, Akito; Yamakoshi, Shigenobu; Horiba, Koji; Kumigashira, Hiroshi; Ohtomo, Akira

    2016-12-01

    Epitaxial growth and electrical properties of γ-Al2O3 films on β-Ga2O3(010) substrates were investigated regarding the prospect of a gate oxide in a β-Ga2O3-based MOSFET. The γ-Al2O3 films grew along the [110] direction and inherited the oxygen sublattice from β-Ga2O3 resulting in the unique in-plane epitaxial relationship of γ-Al2O3 [\\bar{1}10] ∥ β-Ga2O3[001]. We found that the γ-Al2O3 layer had a band gap of 7.0 eV and a type-I band alignment with β-Ga2O3 with conduction- and valence-band offsets of 1.9 and 0.5 eV, respectively. A relatively high trap density (≅ 2 × 1012 cm-2 eV-1) was found from the voltage shift of photoassisted capacitance-voltage curves measured for a Au/γ-Al2O3/β-Ga2O3 MOS capacitor. These results indicate good structural and electric properties and some limitations hindering the better understanding of the role of the gate dielectrics (a γ-Al2O3 interface layer naturally crystallized from amorphous Al2O3) in the β-Ga2O3 MOSFET.

  19. Gibbs free energy assisted passivation layers

    NASA Astrophysics Data System (ADS)

    Salihoglu, Omer; Tansel, T.; Hostut, M.; Ergun, Y.; Aydinli, A.

    2016-05-01

    Reduction of surface leakage is a major challenge in most photodetectors that requires the elimination of surface oxides on etched mesas during passivation. Engineering the passivation requires close attention to chemical reactions that take place at the interface during the process. In particular, removal of surface oxides may be controlled via Gibbs reactivity. We have compared electrical performance of type-II superlattice photodetectors, designed for MWIR operation, passivated by different passivation techniques. We have used ALD deposited Al2O3, HfO2, TiO2, ZnO, PECVD deposited SiO2, Si3N4 and sulphur containing octadecanethiol (ODT) selfassembled monolayers (SAM) passivation layers on InAs/GaSb p-i-n superlattice photodetectors with cutoff wavelength at 5.1 μm. In this work, we have compared the result of different passivation techniques which are done under same conditions, same epitaxial structure and same fabrication processes. We have found that ALD deposited passivation is directly related to the Gibbs free energy of the passivation material. Gibbs free energies of the passivation layer can directly be compared with native surface oxides to check the effectiveness of the passivation layer before the experimental study.

  20. The MgO-Al2O3-SiO2 system - Free energy of pyrope and Al2O3-enstatite. [in earth mantle formation

    NASA Technical Reports Server (NTRS)

    Saxena, S. K.

    1981-01-01

    The model of fictive ideal components is used to determine Gibbs free energies of formation of pyrope and Al2O3-enstatite from the experimental data on coexisting garnet and orthopyroxene and orthopyroxene and spinel in the temperature range 1200-1600 K. It is noted that Al2O3 forms an ideal solution with MgSiO3. These thermochemical data are found to be consistent with the Al2O3 isopleths that could be drawn using most recent experimental data and with the reversed experimental data on the garnet-spinel field boundary.

  1. Activation energy of negative fixed charges in thermal ALD Al2O3

    NASA Astrophysics Data System (ADS)

    Kühnhold-Pospischil, S.; Saint-Cast, P.; Richter, A.; Hofmann, M.

    2016-08-01

    A study of the thermally activated negative fixed charges Qtot and the interface trap densities Dit at the interface between Si and thermal atomic-layer-deposited amorphous Al2O3 layers is presented. The thermal activation of Qtot and Dit was conducted at annealing temperatures between 220 °C and 500 °C for durations between 3 s and 38 h. The temperature-induced differences in Qtot and Dit were measured using the characterization method called corona oxide characterization of semiconductors. Their time dependency were fitted using stretched exponential functions, yielding activation energies of EA = (2.2 ± 0.2) eV and EA = (2.3 ± 0.7) eV for Qtot and Dit, respectively. For annealing temperatures from 350 °C to 500 °C, the changes in Qtot and Dit were similar for both p- and n-type doped Si samples. In contrast, at 220 °C the charging process was enhanced for p-type samples. Based on the observations described in this contribution, a charging model leading to Qtot based on an electron hopping process between the silicon and Al2O3 through defects is proposed.

  2. Catalytic sterilization of Escherichia coli K 12 on Ag/Al2O3 surface.

    PubMed

    Chen, Meixue; Yan, Lizhu; He, Hong; Chang, Qingyun; Yu, Yunbo; Qu, Jiuhui

    2007-05-01

    Bactericidal action of Al(2)O(3), Ag/Al(2)O(3) and AgCl/Al(2)O(3) on pure culture of Escherichia coli K 12 was studied. Ag/Al(2)O(3) and AgCl/Al(2)O(3) demonstrated a stronger bactericidal activity than Al(2)O(3). The colony-forming ability of E. coli was completely lost in 0.5 min on both of Ag/Al(2)O(3) and AgCl/Al(2)O(3) at room temperature in air. The configuration of the bacteria on the catalyst surface was observed using scanning electron microscopy (SEM). Reactive oxygen species (ROS) play an important role in the expression of the bactericidal activity on the surface of catalysts by assay with O(2)/N(2) bubbling and scavenger for ROS. Furthermore, the formation of CO(2) as an oxidation product could be detected by diffuse reflectance infrared Fourier transform spectroscopy (DRIFTS) and be deduced by total carbon analysis. These results strongly support that the bactericidal process on the surface of Ag/Al(2)O(3) and AgCl/Al(2)O(3) was caused by the catalytic oxidation.

  3. Enhanced carrier mobility of multilayer MoS2 thin-film transistors by Al2O3 encapsulation

    NASA Astrophysics Data System (ADS)

    Kim, Seong Yeoul; Park, Seonyoung; Choi, Woong

    2016-10-01

    We report the effect of Al2O3 encapsulation on the carrier mobility and contact resistance of multilayer MoS2 thin-film transistors by statistically investigating 70 devices with SiO2 bottom-gate dielectric. After Al2O3 encapsulation by atomic layer deposition, calculation based on Y-function method indicates that the enhancement of carrier mobility from 24.3 cm2 V-1 s-1 to 41.2 cm2 V-1 s-1 occurs independently from the reduction of contact resistance from 276 kΩ.μm to 118 kΩ.μm. Furthermore, contrary to the previous literature, we observe a negligible effect of thermal annealing on contact resistance and carrier mobility during the atomic layer deposition of Al2O3. These results demonstrate that Al2O3 encapsulation is a useful method of improving the carrier mobility of multilayer MoS2 transistors, providing important implications on the application of MoS2 and other two-dimensional materials into high-performance transistors.

  4. DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600 °C in air

    NASA Astrophysics Data System (ADS)

    Suria, Ateeq J.; Saran Yalamarthy, Ananth; So, Hongyun; Senesky, Debbie G.

    2016-11-01

    To the best of our knowledge, the 600 °C device characteristics detailed here reflect the highest operation temperature reported for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) in air which supports the realization of electronics for high-temperature applications (e.g., space exploration, combustion and downhole). The high-temperature response of Al2O3/AlGaN/GaN MIS-HEMTs with Al2O3 deposited by plasma-enhanced atomic layer deposition (ALD) as the gate dielectric and passivation layers was examined here. More specifically, the DC current-voltage response and the threshold voltage characteristics of the MIS-HEMTs were evaluated to temperatures up to 600 °C in air. For comparison, the response of AlGaN/GaN HEMTs without the ALD Al2O3 layer was also measured. It was observed that the HEMTs failed above 300 °C accompanied by a ˜500 times increase in leakage current and observation of bubbles formed in active region of gate. On the contrary, the MIS-HEMTs continued to operate normally up to 600 °C. However, within the 30 min period exposed to 600 °C the MIS-HEMT degraded permanently. This was observed at 20 °C after return from operation at 600 °C as a change in threshold voltage and saturation drain current. The failure of the HEMTs is suggested to be due to the diffusion of gate metals (Ni and Au) into the active regions of the AlGaN/GaN heterostructure, which creates additional leakage current pathways. The impact of strain relaxation and interfacial trapped charges on threshold voltage as a function of temperature was studied using an energy band-gap model. The ALD Al2O3 gate dielectric layer acts as a diffusion barrier to the Ni and Au gate metals, thus enabling short-term operation of MIS-HEMTs to 600 °C, the highest operation temperature reported for this device architecture to date.

  5. Fabrication of Al2O3-W Functionally Graded Materials by Slipcasting Method

    NASA Astrophysics Data System (ADS)

    Katayama, Tomoyuki; Sukenaga, Sohei; Saito, Noritaka; Kagata, Hajime; Nakashima, Kunihiko

    2011-10-01

    We have successfully fabricated a functionally graded material (FGM) from tungsten and alumina powders by a slip-casting method. This FGM has applications as a sealing and conducting component for high-intensity discharge lamps (HiDLs) that have a translucent alumina envelope. Two types of W powder, with different oxidizing properties, were used as the raw powders for the Al2O3-W FGM. "Oxidized W" was prepared by heat-treatment at 200 °C for 180 min in air. Alumina and each of the W powders were mixed in ultrapure water by ultrasonic stirring. The slurry was then cast into a cylindrical acrylic mold, which had a base of porous alumina, under controlled pressure. The green compacts were subsequently dried, and then sintered using a vacuum furnace at 1600 °C for a fixed time. The microstructures of the FGMs were observed by scanning electron microscopy (SEM) of the polished section. The Al2O3-W FGM with the "oxidized W" powder resulted in a microscopic compositional gradient. However, the FGM with "as-received W" showed no compositional gradient. This result was mainly attributed to the difference between the ζ-potentials of the W powders with the different oxidizing conditions; basically "oxidized W" powder tends to disperse because of the larger ζ-potential of the oxide layer coated on the W powder core.

  6. Growth and characterization of Al2O3 films on fluorine functionalized epitaxial graphene

    NASA Astrophysics Data System (ADS)

    Robinson, Zachary R.; Jernigan, Glenn G.; Wheeler, Virginia D.; Hernández, Sandra C.; Eddy, Charles R.; Mowll, Tyler R.; Ong, Eng Wen; Ventrice, Carl A.; Geisler, Heike; Pletikosic, Ivo; Yang, Hongbo; Valla, Tonica

    2016-08-01

    Intelligent engineering of graphene-based electronic devices on SiC(0001) requires a better understanding of processes used to deposit gate-dielectric materials on graphene. Recently, Al2O3 dielectrics have been shown to form conformal, pinhole-free thin films by functionalizing the top surface of the graphene with fluorine prior to atomic layer deposition (ALD) of the Al2O3 using a trimethylaluminum (TMA) precursor. In this work, the functionalization and ALD-precursor adsorption processes have been studied with angle-resolved photoelectron spectroscopy, low energy electron diffraction, and X-ray photoelectron spectroscopy. It has been found that the functionalization process has a negligible effect on the electronic structure of the graphene, and that it results in a twofold increase in the adsorption of the ALD-precursor. In situ TMA-dosing and XPS studies were also performed on three different Si(100) substrates that were terminated with H, OH, or dangling Si-bonds. This dosing experiment revealed that OH is required for TMA adsorption. Based on those data along with supportive in situ measurements that showed F-functionalization increases the amount of oxygen (in the form of adsorbed H2O) on the surface of the graphene, a model for TMA-adsorption on graphene is proposed that is based on a reaction of a TMA molecule with OH.

  7. Preparation of γ-Al2O3 films by laser chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Gao, Ming; Ito, Akihiko; Goto, Takashi

    2015-06-01

    γ- and α-Al2O3 films were prepared by chemical vapor deposition using CO2, Nd:YAG, and InGaAs lasers to investigate the effects of varying the laser wavelength and deposition conditions on the phase composition and microstructure. The CO2 laser was found to mostly produce α-Al2O3 films, whereas the Nd:YAG and InGaAs lasers produced γ-Al2O3 films when used at a high total pressure. γ-Al2O3 films had a cauliflower-like structure, while the α-Al2O3 films had a dense and columnar structure. Of the three lasers, it was the Nd:YAG laser that interacted most with intermediate gas species. This promoted γ-Al2O3 nucleation in the gas phase at high total pressure, which explains the cauliflower-like structure of nanoparticles observed.

  8. Stacked Graphene-Al2O3 Nanopore Sensors for Sensitive Detection of DNA and DNA-Protein Complexes

    PubMed Central

    Venkatesan, Bala Murali; Estrada, David; Banerjee, Shouvik; Jin, Xiaozhong; Dorgan, Vincent E.; Bae, Myung-Ho; Aluru, Narayana R.; Pop, Eric; Bashir, Rashid

    2012-01-01

    We report the development of a multilayered graphene-Al2O3 nanopore platform for the sensitive detection of DNA and DNA-protein complexes. Graphene-Al2O3 nanolaminate membranes are formed by sequentially depositing layers of graphene and Al2O3 with nanopores being formed in these membranes using an electron-beam sculpting process. The resulting nanopores are highly robust, exhibit low electrical noise (significantly lower than nanopores in pure graphene), are highly sensitive to electrolyte pH at low KCl concentrations (attributed to the high buffer capacity of Al2O3) and permit the electrical biasing of the embedded graphene electrode, thereby allowing for three terminal nanopore measurements. In proof-of-principle biomolecule sensing experiments, the folded and unfolded transport of single DNA molecules and RecA coated DNA complexes could be discerned with high temporal resolution. The process described here also enables nanopore integration with new graphene based structures, including nanoribbons and nanogaps, for single molecule DNA sequencing and medical diagnostic applications. PMID:22165962

  9. Nanoporous Gold Nanoparticles and Au/Al2O3 Hybrid Nanoparticles with Large Tunability of Plasmonic Properties.

    PubMed

    Rao, Wenye; Wang, Dong; Kups, Thomas; Baradács, Eszter; Parditka, Bence; Erdélyi, Zoltán; Schaaf, Peter

    2017-02-22

    Nanoporous gold nanoparticles (NPG-NPs) with controlled particle size and pore size are fabricated via a combination of solid-state dewetting and a subsequent dealloying process. Because of the combined effects of size and porosity, the NPG-NPs exhibit greater plasmonic tunability and significantly higher local field enhancement as compared to solid NPs. The effects of the nanoscale porosity and pore size on the optical extinction are investigated for the NPG-NPs with different particle sizes experimentally and theoretically. The influences of both porosity and pore size on the plasmonic properties are very complicated and clearly different for small particles with dominated dipole mode and large particles with dominated quadrupole mode. Au/Al2O3 hybrid porous NPs with controlled porosity and composition ratio are fabricated through plasma-enhanced atomic layer deposition of Al2O3 into the porous structure. In the Au/Al2O3 hybrid porous NPs, both Au and Al2O3 components are bicontinuously percolated over the entire structure. A further red shift of the plasmon peak is observed in the hybrid NPs due to the change of the environmental refractive index. The high tunability of the plasmonic resonances in the NPG-NPs and the hybrid porous NPs can be very useful for many applications in sensing biological and organic molecules.

  10. High-κ Al2O3 material in low temperature wafer-level bonding for 3D integration application

    NASA Astrophysics Data System (ADS)

    Fan, J.; Tu, L. C.; Tan, C. S.

    2014-03-01

    This work systematically investigated a high-κ Al2O3 material for low temperature wafer-level bonding for potential applications in 3D microsystems. A clean Si wafer with an Al2O3 layer thickness of 50 nm was applied as our experimental approach. Bonding was initiated in a clean room ambient after surface activation, followed by annealing under inert ambient conditions at 300 °C for 3 h. The investigation consisted of three parts: a mechanical support study using the four-point bending method, hermeticity measurements using the helium bomb test, and thermal conductivity analysis for potential heterogeneous bonding. Compared with samples bonded using a conventional oxide bonding material (SiO2), a higher interfacial adhesion energy (˜11.93 J/m2) and a lower helium leak rate (˜6.84 × 10-10 atm.cm3/sec) were detected for samples bonded using Al2O3. More importantly, due to the excellent thermal conductivity performance of Al2O3, this technology can be used in heterogeneous direct bonding, which has potential applications for enhancing the performance of Si photonic integrated devices.

  11. CeO2 nanocrystals and solid-phase heteroepitaxy of CeAlO3 interlayer on Al2O3(0 0 0 1) substrate

    NASA Astrophysics Data System (ADS)

    Hattori, Takashi; Ozawa, Masakuni

    2017-04-01

    Grain growth and interfacial solid state of CeO2 nanocrystals (NCs) layer on Al2O3(0 0 0 1) substrate were examined. CeO2 NCs layer on Al2O3(0 0 0 1) was prepared by dipping method using CeO2 nanocrystals colloid solution. After heat treatment at 1000 °C in air, CeO2 NCs layer was formed on Al2O3(0 0 0 1). The CeO2 NCs sintered to form a surface layer with an interlayer of CeAlO3 after heat treatment at 950 °C in H2/Ar, leading to dense and smooth CeO2 NCs layer on Al2O3(0 0 0 1) substrate. CeAlO3 was grown via diffusion of CeO2-x (non-stoichiometric CeO2) and Al2O3, suggesting solid-phase reaction heteroepitaxy mechanism on Al2O3(0 0 0 1) single crystal substrate.

  12. Effect of Ultrasonic Vibration on the Behavior of Antifriction and Wear Resistance of Al2O3/Al2O3 Ceramic Friction Pairs Under Oil Lubrication

    NASA Astrophysics Data System (ADS)

    Dong, X. Y.; Qiao, Y. L.; Zang, Y.; Cui, Q. S.

    The behavior of antifriction and wear resistance of Al2O3/Al2O3 ceramic friction pairs lubricated by four different lubrication oils under ultrasonic vibration was studied. The surface morphologies of wear scare was analyzed by metallographic microscope. The effect mechanism of ultrasonic vibration on frictional pairs under different lubrication oils was discussed. The studied results showed that, ultrasonic vibration would improve the behavior of antifriction and wear resistance of the Al2O3/Al2O3 ceramic friction pairs under various lubrication oils.The improving would be dramaticer when the viscosity of lubrication oil was low. Ultrasonic vibration decreased the friction coefficient and wear volume 12.9% and 38.7% respectively, when the lubrication oil was 6#,the viscosity of which is 39.77 mm2/s. When the lubrication oil was 150BS, the viscosity of which is 549.69 mm2/s, ultrasonic vibration made friction coefficient and wear volume decreased 4.6% and 11.6% respectively.The effect of ultrasonic vibration on the behavior of antifriction and wear resistance of Al2O3/Al2O3 ceramic friction pairs was determined by the formation and the destruction of oil film on the friction surface and the upward floatage created by ultrasonic vibration.

  13. Ultrathin Al2O3 interface achieving an 11.46% efficiency in planar n-Si/PEDOT:PSS hybrid solar cells

    NASA Astrophysics Data System (ADS)

    Nam, Yoon-Ho; Song, Jae-Won; Park, Min-Joon; Sami, Abdul; Lee, Jung-Ho

    2017-04-01

    Hybrid organic–inorganic photovoltaic devices consisting of poly(3,4-etyhlenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and n-type silicon have recently been investigated for their cost-efficiency and ease of fabrication. We demonstrate that the insertion of an ultrathin Al2O3 layer between n-Si and PEDOT:PSS significantly improves photovoltaic performance in comparison to the conventional interfacial oxide employing SiO2. A power-conversion efficiency of 11.46% was recorded at the optimal Al2O3 thickness of 2.3 nm. This result was achieved based upon increased built-in potential and improved charge collection via the electron blocking effect of Al2O3. In addition, the hydrophilicity enhanced by Al2O3 improved the coating uniformity of the PEDOT:PSS layer, resulting in a further reduction in surface recombination.

  14. The evolution and growth of Al2O3 scales on beta-NiAl. Ph.D. Thesis. Final Report

    NASA Technical Reports Server (NTRS)

    Doychak, J. K.

    1986-01-01

    The formation and growth of Al2O3 scales on (beta)-NiAl were studied using electron microscopy and other analytical techniques to gain an understanding of the oxidation properties of (beta)-NiAl and of alumina-forming alloys, in general. The transient and mature stages of oxidation were studied as well as the transformation stage during which the oxide scale transforms from metastable Al2O3 phases to the thermodynamically stable alpha-Al2O3 phase. The transient oxidation stages were studied at 800 deg C and for short times at 1100C. At 800C, the scales consist predominantly of delta-Al2O3 which forms by cation vacancy ordering in the defective spinel lattice of gamma-Al2O3. At 1100C, a fast-growth morphology of theta-Al2O3 forms as a surface layer over delta-Al2O3. For both oxidation temperatures, the scales are often epitaxially oriented with respect to the metal. The transient scales grow by outward cation diffusion as evidenced by surface growth morphologies. The transformation to alpha-Al2O3 occurs within 1 hour at 1100C by a nucleation and radial growth process. The large volume decrease associated with the transformation results in a highly strained alpha-Al2O3 microstructure. A change in scale growth mechanism from outward cation to inward anion diffusion allows transient surface morphologies to be smoothed by surface diffusion. The mature stage of oxidation involves the growth of an alpha-Al2O3 scale having the lacey morphology formed as a result of the gamma yields alpha transformation. Growth of the scale occurs by counterdiffusion along grain boundaries resulting in ridges formed by impingement of alpha-Al2O3 nuclei during the transformation stage. Also scale growth occurs by inward oxygen diffusion through healed cracks; the cracks result from transformation stresses. The measured growth rates of scales having the lacey morphology are an order of magnitude less than fine-grained alpha-Al2O3 scales. Metal orientations were found to have a large effect on

  15. Structural, electronic structure, and band alignment properties at epitaxial NiO/Al2O3 heterojunction evaluated from synchrotron based X-ray techniques

    NASA Astrophysics Data System (ADS)

    Singh, S. D.; Nand, Mangla; Das, Arijeet; Ajimsha, R. S.; Upadhyay, Anuj; Kamparath, Rajiv; Shukla, D. K.; Mukherjee, C.; Misra, P.; Rai, S. K.; Sinha, A. K.; Jha, S. N.; Phase, D. M.; Ganguli, Tapas

    2016-04-01

    The valence band offset value of 2.3 ± 0.2 eV at epitaxial NiO/Al2O3 heterojunction is determined from photoelectron spectroscopy experiments. Pulsed laser deposited thin film of NiO on Al2O3 substrate is epitaxially grown along [111] direction with two domain structures, which are in-plane rotated by 60° with respect to each other. Observation of Pendellosung oscillations around Bragg peak confirms high interfacial and crystalline quality of NiO layer deposited on Al2O3 substrate. Surface related feature in Ni 2p3/2 core level spectra along with oxygen K-edge soft X-ray absorption spectroscopy results indicates that the initial growth of NiO on Al2O3 substrate is in the form of islands, which merge to form NiO layer for the larger coverage. The value of conduction band offset is also evaluated from the measured values of band gaps of NiO and Al2O3 layers. A type-I band alignment at NiO and Al2O3 heterojunction is also obtained. The determined values of band offsets can be useful in heterojunction based light emitting devices.

  16. Properties of slow traps of ALD Al2O3/GeOx/Ge nMOSFETs with plasma post oxidation

    NASA Astrophysics Data System (ADS)

    Ke, M.; Yu, X.; Chang, C.; Takenaka, M.; Takagi, S.

    2016-07-01

    The realization of Ge gate stacks with a small amount of slow trap density as well as thin equivalent oxide thickness and low interface state density (Dit) is a crucial issue for Ge CMOS. In this study, we examine the properties of slow traps, particularly the location of slow traps, of Al2O3/GeOx/n-Ge and HfO2/Al2O3/GeOx/n-Ge MOS interfaces with changing the process and structural parameters, formed by atomic layer deposition (ALD) of Al2O3 and HfO2/Al2O3 combined with plasma post oxidation. It is found that the slow traps can locate in the GeOx interfacial layer, not in the ALD Al2O3 layer. Furthermore, we study the time dependence of channel currents in the Ge n-MOSFETs with 5-nm-thick Al2O3/GeOx/Ge gate stacks, with changing the thickness of GeOx, in order to further clarify the position of slow traps. The time dependence of the current drift and the effective time constant of slow traps do not change among the MOSFETs with the different thickness GeOx, demonstrating that the slow traps mainly exist near the interfaces between Ge and GeOx.

  17. Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3(010) and its suppressed interface state density

    NASA Astrophysics Data System (ADS)

    Kamimura, Takafumi; Krishnamurthy, Daivasigamani; Kuramata, Akito; Yamakoshi, Shigenobu; Higashiwaki, Masataka

    2016-12-01

    Al2O3 films were deposited on β-Ga2O3(010) and β-Ga2O3 (\\bar{2}01) substrates by atomic layer deposition at 250 °C, and their interface state densities (D it) at shallow energies were evaluated using a high-low capacitance-voltage (C-V) method. Al2O3/β-Ga2O3(010) showed lower D it values (5.9 × 1010 to 9.3 × 1011 cm-2 eV-1) than Al2O3/β-Ga2O3 (\\bar{2}01) (2.0 × 1011 to 2.0 × 1012 cm-2 eV-1) in an energy range of -0.8 to -0.1 eV. Cross-sectional transmission electron microscopy analysis indicated the formation of a uniform amorphous Al2O3 layer on the β-Ga2O3 (\\bar{2}01) substrate. In contrast, a crystalline Al2O3 interlayer with a thickness of 3.2 ± 0.7 nm with an amorphous Al2O3 top layer was formed on the β-Ga2O3(010) substrate, which effectively decreased D it. Moreover, thicker interlayers showing lower D it values at deep state levels were formed at deposition temperatures higher than 100 °C, which were evaluated by shifts in the C-V curves.

  18. Highly Flexible and Transparent Ag Nanowire Electrode Encapsulated with Ultra-Thin Al2O3: Thermal, Ambient, and Mechanical Stabilities

    PubMed Central

    Hwang, Byungil; An, Youngseo; Lee, Hyangsook; Lee, Eunha; Becker, Stefan; Kim, Yong-Hoon; Kim, Hyoungsub

    2017-01-01

    There is an increasing demand in the flexible electronics industry for highly robust flexible/transparent conductors that can withstand high temperatures and corrosive environments. In this work, outstanding thermal and ambient stability is demonstrated for a highly transparent Ag nanowire electrode with a low electrical resistivity, by encapsulating it with an ultra-thin Al2O3 film (around 5.3 nm) via low-temperature (100 °C) atomic layer deposition. The Al2O3-encapsulated Ag nanowire (Al2O3/Ag) electrodes are stable even after annealing at 380 °C for 100 min and maintain their electrical and optical properties. The Al2O3 encapsulation layer also effectively blocks the permeation of H2O molecules and thereby enhances the ambient stability to greater than 1,080 h in an atmosphere with a relative humidity of 85% at 85 °C. Results from the cyclic bending test of up to 500,000 cycles (under an effective strain of 2.5%) confirm that the Al2O3/Ag nanowire electrode has a superior mechanical reliability to that of the conventional indium tin oxide film electrode. Moreover, the Al2O3 encapsulation significantly improves the mechanical durability of the Ag nanowire electrode, as confirmed by performing wiping tests using isopropyl alcohol. PMID:28128218

  19. Highly Flexible and Transparent Ag Nanowire Electrode Encapsulated with Ultra-Thin Al2O3: Thermal, Ambient, and Mechanical Stabilities

    NASA Astrophysics Data System (ADS)

    Hwang, Byungil; An, Youngseo; Lee, Hyangsook; Lee, Eunha; Becker, Stefan; Kim, Yong-Hoon; Kim, Hyoungsub

    2017-01-01

    There is an increasing demand in the flexible electronics industry for highly robust flexible/transparent conductors that can withstand high temperatures and corrosive environments. In this work, outstanding thermal and ambient stability is demonstrated for a highly transparent Ag nanowire electrode with a low electrical resistivity, by encapsulating it with an ultra-thin Al2O3 film (around 5.3 nm) via low-temperature (100 °C) atomic layer deposition. The Al2O3-encapsulated Ag nanowire (Al2O3/Ag) electrodes are stable even after annealing at 380 °C for 100 min and maintain their electrical and optical properties. The Al2O3 encapsulation layer also effectively blocks the permeation of H2O molecules and thereby enhances the ambient stability to greater than 1,080 h in an atmosphere with a relative humidity of 85% at 85 °C. Results from the cyclic bending test of up to 500,000 cycles (under an effective strain of 2.5%) confirm that the Al2O3/Ag nanowire electrode has a superior mechanical reliability to that of the conventional indium tin oxide film electrode. Moreover, the Al2O3 encapsulation significantly improves the mechanical durability of the Ag nanowire electrode, as confirmed by performing wiping tests using isopropyl alcohol.

  20. Sonochemical asymmetric hydrogenation of isophorone on proline modified Pd/Al2O3 catalysts.

    PubMed

    Mhadgut, Shilpa C; Bucsi, Imre; Török, Marianna; Török, Béla

    2004-04-21

    The sonochemical asymmetric hydrogenation of isophorone (3,3,5-trimethyl-2-cyclohexenone) by proline-modified Pd/Al2O3 catalysts is described; presonication of a commercial Pd/Al2O3-proline catalytic system resulted in highly enhanced enantioselectivities (up to 85% ee).

  1. Metastability in the MgAl2O4-Al2O3 System

    DOE PAGES

    Wilkerson, Kelley R.; Smith, Jeffrey D.; Hemrick, James G.

    2014-07-22

    Aluminum oxide must take a spinel form ( γ-Al2O3) at elevated temperatures in order for extensive solid solution to form between MgAl2O4 and α-Al2O3. The solvus line between MgAl2O4 and Al2O3 has been defined at 79.6 wt% Al2O3 at 1500°C, 83.0 wt% Al2O3 at 1600°C, and 86.5 wt% Al2O3 at 1700°C. A metastable region has been defined at temperatures up to 1700°C which could have significant implications for material processing and properties. Additionally, initial processing could have major implications on final chemistry. The spinel solid solution region has been extended to form an infinite solid solution with Al2O3 at elevatedmore » temperatures. A minimum in melting at 1975°C and a chemistry of 96 wt% Al2O3 rather than a eutectic is present, resulting in no eutectic crystal formation during solidification.« less

  2. Influence of Al2O3 sol concentration on the microstructure and mechanical properties of Cu-Al2O3 composite coatings

    NASA Astrophysics Data System (ADS)

    Wei, Xiaojin; Yang, Zhendi; Tang, Ying; Gao, Wei

    2015-03-01

    Copper (Cu) is widely used as electrical conducting and contacting material. However, Cu is soft and does not have good mechanical properties. In order to improve the hardness and wear resistance of Cu, sol-enhanced Cu-Al2O3 nanocomposite coatings were electroplated by adding a transparent Al oxide (Al2O3) sol into the traditional electroplating Cu solution. It was found that the microstructure and mechanical properties of the nanocomposite coatings were largely influenced by the Al2O3 sol concentration. The results show that the Al2O3 nanoparticle reinforced the composite coatings, resulting in significantly improved hardness and wear resistance in comparison with the pure Cu coatings. The coating prepared at the sol concentration of 3.93 mol/L had the best microhardness and wear resistance. The microhardness has been improved by 20% from 145.5 HV (Vickers hardness number) of pure Cu coating to 173.3 HV of Cu-Al2O3 composite coatings. The wear resistance was also improved by 84%, with the wear volume loss dropped from 3.2 × 10-3 mm3 of Cu coating to 0.52 × 10-3 mm3 of composite coatings. Adding excessive sol to the electrolyte deteriorated the properties.

  3. Effect of Al2O3 Concentration on Density and Structure of (CaO-SiO2)-xAl2O3 Slag

    NASA Astrophysics Data System (ADS)

    Rajavaram, Ramaraghavulu; Kim, Hyelim; Lee, Chi-Hoon; Cho, Won-Seung; Lee, Chi-Hwan; Lee, Joonho

    2017-03-01

    The effect of Al2O3 concentration on the density and structure of CaO-SiO2-Al2O3 slag was investigated at multiple Al2O3 mole percentages and at a fixed CaO/SiO2 ratio of 1. The experiments were conducted in the temperature range of 2154 K to 2423 K (1881 °C to 2150 °C) using the aerodynamic levitation technique. In order to understand the relationship between density and structure, structural analysis of the silicate melts was carried out using Raman spectroscopy. The density of each slag sample investigated in this study decreased linearly with increasing temperature. When the Al2O3 content was less than 15 mole pct, density decreased with increasing Al2O3 content due to the coupling of Si (Al), whereas above 20 mole pct density of the slag increased due to the role of Al3+ ion as a network modifier.

  4. Formation of gamma(sup prime)-Ni3Al via the Peritectoid Reaction: gamma + beta (+ Al2O3)=gamma(sup prime)(+ Al2O3)

    NASA Technical Reports Server (NTRS)

    Copeland, Evan

    2008-01-01

    The activities of Al and Ni were measured using multi-cell Knudsen effusion-cell mass spectrometry (multi-cell KEMS), over the composition range 8-32 at.%Al and temperature range T=1400-1750 K in the Ni-Al-O system. These measurements establish that equilibrium solidification of gamma(sup prime)-Ni3Al-containing alloys occurs by the eutectic reaction, L (+ Al2O3)=gamma + Beta(+ Al2O3), at 1640 +/- 1 K and a liquid composition of 24.8 +/- 0.2 at.%al (at an unknown oxygen content). The {gamma + Beta (+Al2O3} phase field is stable over the temperature range 1633-1640 K, and gamma(sup prime)-Ni3Al forms via the peritectoid, gamma + Beta (+ Al2O3)=gamma(sup prime) (+ Al2O3), at 1633 +/- 1 K. This behavior is consistent with the current Ni-Al phase diagram and a new diagram is proposed. This new Ni-Al phase diagram explains a number of unusual steady-state solidification structures reported previously and provides a much simpler reaction scheme in the vicinity of the gamma(sup prime)-Ni2Al phase field.

  5. Formation of gamma'-Ni3Al via the Peritectoid Reaction: gamma plus beta (+Al2O3) equals gamma'(+Al2O3)

    NASA Technical Reports Server (NTRS)

    Copland, Evan

    2008-01-01

    The activities of Al and Ni were measured using multi-cell Knudsen effusion-cell mass spectrometry (multi-cell KEMS), over the composition range 8 - 32 at.%Al and temperature range T = 1400 - 1750 K in the Ni-Al-O system. These measurements establish that equilibrium solidification of gamma'-Ni3Al-containing alloys occurs by the eutectic reaction, L (+ Al2O3) = gamma + beta (+ Al2O3), at 1640 plus or minus 1 K and a liquid composition of 24.8 plus or minus 0.2 at.%Al (at an unknown oxygen content). The {gamma + beta + Al2O3} phase field is stable over the temperature range 1633 - 1640 K, and gamma'-Ni3Al forms via the peritectiod, gamma + beta (+ Al2O3) = gamma'(+ Al2O3), at 1633 plus or minus 1 K. This behavior is inconsistent with the current Ni-Al phase diagram and a new diagram is proposed. This new Ni-Al phase diagram explains a number of unusual steady state solidification structures reported previously and provides a much simpler reaction scheme in the vicinity of the gamma'-Ni3Al phase field.

  6. Memristive behavior of Al2O3 film with bottom electrode surface modified by Ag nanoparticles

    NASA Astrophysics Data System (ADS)

    Qin, Shu-Chao; Dong, Rui-Xin; Yan, Xun-Ling

    2014-09-01

    The memristive behavior of Al2O3-based device is significantly improved by introducing Ag nanoparticles (NPs). Inserting Ag NPs can effectively reduce the switching voltages, increase the resistance ratio (about 104) and enhance the sweep endurance (300 cycles). In particular, the stable switching properties are obtained by inserting an Ag NPs layer with an average diameter of 14 nm on the surface of bottom electrode, and the devices show a long retention time (more than 106 s) compared with the devices without Ag NPs. The switching mechanism is related to the oxygen-vacancy-based conducting filaments and the interfacial effect. The local enhancement and nonuniform distribution of electric field have the benefits to promote, induce and modulate the growth of conducting filaments, such as shape, location and orientation, which are responsible for the improvement performance of the devices.

  7. Memristive behavior of Al2O3 film with bottom electrode surface modified by Ag nanoparticles

    NASA Astrophysics Data System (ADS)

    Qin, Shu-Chao; Dong, Rui-Xin; Yan, Xun-Ling

    2015-02-01

    The memristive behavior of Al2O3-based device is significantly improved by introducing Ag nanoparticles (NPs). Inserting Ag NPs can effectively reduce the switching voltages, increase the resistance ratio (about 104) and enhance the sweep endurance (300 cycles). In particular, the stable switching properties are obtained by inserting an Ag NPs layer with an average diameter of 14 nm on the surface of bottom electrode, and the devices show a long retention time (more than 106 s) compared with the devices without Ag NPs. The switching mechanism is related to the oxygen-vacancy-based conducting filaments and the interfacial effect. The local enhancement and nonuniform distribution of electric field have the benefits to promote, induce and modulate the growth of conducting filaments, such as shape, location and orientation, which are responsible for the improvement performance of the devices.

  8. Acoustic phonon dynamics in strained cubic and hexagonal GaN/Al2O3 superlattices

    NASA Astrophysics Data System (ADS)

    Sesion, P. D., Jr.; Albuquerque, E. L.; Vasconcelos, M. S.; Mauriz, P. W.; Freire, V. N.

    2006-06-01

    We study the acoustic-phonon spectra in periodic and quasiperiodic (Fibonacci type) superlattices made up from III V nitride materials (GaN) intercalated by sapphire (Al2O3). Due to the misalignments between the sapphire and the GaN layers that can lead to threading dislocation densities as high as 108-1010 cm-1, and a significant lattice mismatch (~14%), the phonon dynamics is described beyond the continuum elastic model using coupled elastic and electromagnetic equations, stressing the importance of the piezoelectric polarization field in a strained condition. We use a transfer-matrix treatment to simplify the algebra, which would be otherwise quite complicated, allowing a neat analytical expressions for the phonon dispersion relation. Furthermore, a quantitative analysis of the localization and magnitude of the allowed band widths in the phonon's spectra, as well as their scale law and the parametric spectrum of singularities f(α), are presented and discussed.

  9. ALD of Al2O3 for Highly Improved Performance in Li-Ion Batteries

    SciTech Connect

    Dillon, A.; Jung, Y. S.; Ban, C.; Riley, L.; Cavanagh, A.; Yan, Y.; George, S.; Lee, S. H.

    2012-01-01

    Significant advances in energy density, rate capability and safety will be required for the implementation of Li-ion batteries in next generation electric vehicles. We have demonstrated atomic layer deposition (ALD) as a promising method to enable superior cycling performance for a vast variety of battery electrodes. The electrodes range from already demonstrated commercial technologies (cycled under extreme conditions) to new materials that could eventually lead to batteries with higher energy densities. For example, an Al2O3 ALD coating with a thickness of ~ 8 A was able to stabilize the cycling of unexplored MoO3 nanoparticle anodes with a high volume expansion. The ALD coating enabled stable cycling at C/2 with a capacity of ~ 900 mAh/g. Furthermore, rate capability studies showed the ALD-coated electrode maintained a capacity of 600 mAh/g at 5C. For uncoated electrodes it was only possible to observe stable cycling at C/10. Also, we recently reported that a thin ALD Al2O3 coating with a thickness of ~5 A can enable natural graphite (NG) electrodes to exhibit remarkably durable cycling at 50 degrees C. The ALD-coated NG electrodes displayed a 98% capacity retention after 200 charge-discharge cycles. In contrast, bare NG showed a rapid decay. Additionally, Al2O3 ALD films with a thickness of 2 to 4 A have been shown to allow LiCoO2 to exhibit 89% capacity retention after 120 charge-discharge cycles performed up to 4.5 V vs Li/Li+. Bare LiCoO2 rapidly deteriorated in the first few cycles. The capacity fade is likely caused by oxidative decomposition of the electrolyte at higher potentials or perhaps cobalt dissolution. Interestingly, we have recently fabricated full cells of NG and LiCoO2 where we coated both electrodes, one or the other electrode as well as neither electrode. In creating these full cells, we observed some surprising results that lead us to obtain a greater understanding of the ALD coatings. We have also recently coated a binder free LiNi0.04Mn0

  10. The resistance to wear and corrosion of laser-cladding Al 2O 3 ceramic coating on Mg alloy

    NASA Astrophysics Data System (ADS)

    Gao, Ya-li; Wang, Cun-shan; Yao, Man; Liu, Hong-bin

    2007-04-01

    The paper presents a study on the preparation of Al 2O 3 ceramic coating on AZ91HP Mg alloy by laser remelting plasma-sprayed coating. It was found that after laser remelting, the coating exhibited obvious layer-like characteristics due to influence of temperature distribution, thermophysical parameters and layer thickness. According to the microstructural difference, the coating can be divided into the melted zone with the α-Al 2O 3 column-like crystal, the sintered zone with flock-like structure, the residual plasma-sprayed zone with loosened structure. Because of the dense column-like crystal, the hardness, wear and corrosion resistance of the laser remelted coating are much higher than those of the plasma-sprayed coating and as-received Mg alloy.

  11. Microstructure and Optical Properties of SS/Mo/Al2O3 Spectrally Selective Solar Absorber Coating

    NASA Astrophysics Data System (ADS)

    Gao, Xiang-Hu; Guo, Zhi-Ming; Geng, Qing-Fen; Ma, Peng-Jun; Liu, Gang

    2017-01-01

    Surface-textured Mo thin film is fabricated by magnetron sputtering through the adjustment of deposition parameters, which exhibits a high absorptance of 0.80 and a low emittance of 0.09. The single-layer Mo deposited on stainless steel (SS) is characterized by x-ray diffraction (XRD), ultra-high resolution scanning electron microscope, atomic force microscope and optical measurement. The controlled surface roughness combined with larger aspect ratio contributes much to the high absorptance and low emittance. Based on the SS/Mo coating, a spectrally selective coating (SS/Mo/Al2O3) is designed and fabricated. The coating shows an amorphous structure and exhibits an absorptance of 0.90 and an emittance of 0.08. Tauc-Lorentz and Drude free-electron models are used to modeling the optical properties of Al2O3 and Mo layers by phase-modulated spectroscopic ellipsometry.

  12. Microstructure and Optical Properties of SS/Mo/Al2O3 Spectrally Selective Solar Absorber Coating

    NASA Astrophysics Data System (ADS)

    Gao, Xiang-Hu; Guo, Zhi-Ming; Geng, Qing-Fen; Ma, Peng-Jun; Liu, Gang

    2016-11-01

    Surface-textured Mo thin film is fabricated by magnetron sputtering through the adjustment of deposition parameters, which exhibits a high absorptance of 0.80 and a low emittance of 0.09. The single-layer Mo deposited on stainless steel (SS) is characterized by x-ray diffraction (XRD), ultra-high resolution scanning electron microscope, atomic force microscope and optical measurement. The controlled surface roughness combined with larger aspect ratio contributes much to the high absorptance and low emittance. Based on the SS/Mo coating, a spectrally selective coating (SS/Mo/Al2O3) is designed and fabricated. The coating shows an amorphous structure and exhibits an absorptance of 0.90 and an emittance of 0.08. Tauc-Lorentz and Drude free-electron models are used to modeling the optical properties of Al2O3 and Mo layers by phase-modulated spectroscopic ellipsometry.

  13. Carbon-riveted Pt catalyst supported on nanocapsule MWCNTs-Al2O3 with ultrahigh stability for high-temperature proton exchange membrane fuel cells

    NASA Astrophysics Data System (ADS)

    Jiang, Zheng-Zhi; Wang, Zhen-Bo; Qu, Wei-Li; Rivera, Harry; Gu, Da-Ming; Yin, Ge-Ping

    2012-11-01

    Pt catalyst supported on nanocapsule MWCNTs-Al2O3 (multi-walled carbon nanotubes, MWCNTs) catalyst has been prepared by microwave-assisted polyol process (MAPP). The results of electrochemical measurements show that the nanocapsule Pt/MWCNTs-Al2O3 catalyst has higher activity due to more uniform dispersion and smaller size of Pt nanoparticles, and higher stability ascribed to the stronger metal-support interaction (SMSI) between Pt nanoparticles and nanocapsule support than in Pt/MWCNTs. Furthermore, the carbon-riveted nanocapsule Pt/MWCNTs-Al2O3 catalyst has been designed and synthesized on the basis of in situ carbonization of glucose. The physical characteristics such as X-ray diffraction (XRD), energy dispersive analysis of X-ray (EDAX), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) have indicated that α-Al2O3 indeed entered into the inside of the MWCNTs and formed a nanocapsule support of MWCNTs with α-Al2O3 as stuffing. The accelerated potential cycling tests (APCT) show that carbon-riveted nanocapsule Pt/MWCNTs-Al2O3 possesses 10 times the stability of Pt/C and has 4.5 times the life-span of carbon-riveted Pt/TiO2-C reported in our previous work. The significantly enhanced stability for carbon-riveted nanocapsule Pt/MWCNTs-Al2O3 catalyst is attributed to the reasons as follows: the inherently excellent mechanical resistance and stability of α-Al2O3 and MWCNTs in acidic and oxidative environments; SMSI between Pt nanoparticles and the nanocapsule support; the anchoring effect of the carbon layers formed during the carbon-riveting process (CRP); the increase of Pt(0) composition during CRP.

  14. Volatile organic compounds emission control in industrial pollution source using plasma technology coupled with F-TiO2/γ-Al2O3.

    PubMed

    Zhu, Tao; Chen, Rui; Xia, Ni; Li, Xiaoyang; He, Xianxian; Zhao, Wenjuan; Carr, Tim

    2015-01-01

    Volatile organic compounds' (VOCs) effluents, which come from many industries, are triggering serious environmental problems. As an emerging technology, non-thermal plasma (NTP) technology is a potential technology for VOCs emission control. NTP coupled with F-TiO2/γ-Al2O3 is used for toluene removal from a gaseous influent at normal temperature and atmospheric pressure. NTP is generated by dielectric barrier discharge, and F-TiO2/γ-Al2O3 can be prepared by sol-gel method in the laboratory. In the experiment, the different packed materials were packed into the plasma reactor, including γ-Al2O3, TiO2/γ-Al2O3 and F-TiO2/γ-Al2O3. Through a series of characterization methods such as X-ray diffraction, scanning electronic microscopy and Brunner-Emmet-Teller measurements, the results show that the particle size distribution of F-TiO2 is relatively smaller than that of TiO2, and the pore distribution of F-TiO2 is more uniformly distributed than that of TiO2. The relationships among toluene removal efficiency, reactor input energy density, and the equivalent capacitances of air gap and dielectric barrier layer were investigated. The results show that the synergistic technology NTP with F-TiO2/γ-Al2O3 resulted in greater enhancement of toluene removal efficiency and energy efficiency. Especially, when packing with F-TiO2/γ-Al2O3 in NTP reactor, toluene removal efficiency reaches 99% and higher. Based on the data analysis of Fourier Transform Infrared Spectroscopy, the experimental results showed that NTP reactor packed with F-TiO2/γ-Al2O3 resulted in a better inhibition for by-products formation effectively in the gas exhaust.

  15. Anisotropic temperature-dependent thermal conductivity by an Al2O3 interlayer in Al2O3/ZnO superlattice films

    NASA Astrophysics Data System (ADS)

    Lee, Won-Yong; Lee, Jung-Hoon; Ahn, Jae-Young; Park, Tae-Hyun; Park, No-Won; Kim, Gil-Sung; Park, Jin-Seong; Lee, Sang-Kwon

    2017-03-01

    The thermal conductivity of superlattice films is generally anisotropic and should be studied separately in the in-plane and cross-plane directions of the films. However, previous works have mostly focused on the cross-plane thermal conductivity because the electrons and phonons in the cross-plane direction of superlattice films may result in much stronger interface scattering than that in the in-plane direction. Nevertheless, it is highly desirable to perform systematic studies on the effect of interface formation in semiconducting superlattice films on both in-plane and cross-plane thermal conductivities. In this study, we determine both the in-plane and cross-plane thermal conductivities of Al2O3 (AO)/ZnO superlattice films grown by atomic layer deposition (ALD) on SiO2/Si substrates in the temperature range of 50–300 K by the four-point-probe 3-ω method. Our experimental results indicate that the formation of an atomic AO layer (0.82 nm) significantly contributes to the decrease of the cross-plane thermal conductivity of the AO/ZnO superlattice films compared with that of AO/ZnO thin films. The cross-plane thermal conductivity (0.26–0.63 W m‑1 K‑1 of the AO/ZnO superlattice films (with an AO layer of ∼0.82 nm thickness) is approximately ∼150%–370% less than the in-plane thermal conductivity (0.96–1.19 W m‑1 K‑1) of the corresponding film, implying significant anisotropy. This indicates that the suppression of the cross-plane thermal conductivity is mainly attributed to the superlattice, rather than the nanograin columnar structure in the films. In addition, we theoretically analyzed strong anisotropic behavior of the in-plane and cross-plane thermal conductivities of the AO/ZnO superlattice films in terms of temperature dependence.

  16. Anisotropic temperature-dependent thermal conductivity by an Al2O3 interlayer in Al2O3/ZnO superlattice films.

    PubMed

    Lee, Won-Yong; Lee, Jung-Hoon; Ahn, Jae-Young; Park, Tae-Hyun; Park, No-Won; Kim, Gil-Sung; Park, Jin-Seong; Lee, Sang-Kwon

    2017-03-10

    The thermal conductivity of superlattice films is generally anisotropic and should be studied separately in the in-plane and cross-plane directions of the films. However, previous works have mostly focused on the cross-plane thermal conductivity because the electrons and phonons in the cross-plane direction of superlattice films may result in much stronger interface scattering than that in the in-plane direction. Nevertheless, it is highly desirable to perform systematic studies on the effect of interface formation in semiconducting superlattice films on both in-plane and cross-plane thermal conductivities. In this study, we determine both the in-plane and cross-plane thermal conductivities of Al2O3 (AO)/ZnO superlattice films grown by atomic layer deposition (ALD) on SiO2/Si substrates in the temperature range of 50-300 K by the four-point-probe 3-ω method. Our experimental results indicate that the formation of an atomic AO layer (0.82 nm) significantly contributes to the decrease of the cross-plane thermal conductivity of the AO/ZnO superlattice films compared with that of AO/ZnO thin films. The cross-plane thermal conductivity (0.26-0.63 W m(-1) K(-1) of the AO/ZnO superlattice films (with an AO layer of ∼0.82 nm thickness) is approximately ∼150%-370% less than the in-plane thermal conductivity (0.96-1.19 W m(-1) K(-1)) of the corresponding film, implying significant anisotropy. This indicates that the suppression of the cross-plane thermal conductivity is mainly attributed to the superlattice, rather than the nanograin columnar structure in the films. In addition, we theoretically analyzed strong anisotropic behavior of the in-plane and cross-plane thermal conductivities of the AO/ZnO superlattice films in terms of temperature dependence.

  17. Oxidation of the GaAs semiconductor at the Al2O3/GaAs junction.

    PubMed

    Tuominen, Marjukka; Yasir, Muhammad; Lång, Jouko; Dahl, Johnny; Kuzmin, Mikhail; Mäkelä, Jaakko; Punkkinen, Marko; Laukkanen, Pekka; Kokko, Kalevi; Schulte, Karina; Punkkinen, Risto; Korpijärvi, Ville-Markus; Polojärvi, Ville; Guina, Mircea

    2015-03-14

    Atomic-scale understanding and processing of the oxidation of III-V compound-semiconductor surfaces are essential for developing materials for various devices (e.g., transistors, solar cells, and light emitting diodes). The oxidation-induced defect-rich phases at the interfaces of oxide/III-V junctions significantly affect the electrical performance of devices. In this study, a method to control the GaAs oxidation and interfacial defect density at the prototypical Al2O3/GaAs junction grown via atomic layer deposition (ALD) is demonstrated. Namely, pre-oxidation of GaAs(100) with an In-induced c(8 × 2) surface reconstruction, leading to a crystalline c(4 × 2)-O interface oxide before ALD of Al2O3, decreases band-gap defect density at the Al2O3/GaAs interface. Concomitantly, X-ray photoelectron spectroscopy (XPS) from these Al2O3/GaAs interfaces shows that the high oxidation state of Ga (Ga2O3 type) decreases, and the corresponding In2O3 type phase forms when employing the c(4 × 2)-O interface layer. Detailed synchrotron-radiation XPS of the counterpart c(4 × 2)-O oxide of InAs(100) has been utilized to elucidate the atomic structure of the useful c(4 × 2)-O interface layer and its oxidation process. The spectral analysis reveals that three different oxygen sites, five oxidation-induced group-III atomic sites with core-level shifts between -0.2 eV and +1.0 eV, and hardly any oxygen-induced changes at the As sites form during the oxidation. These results, discussed within the current atomic model of the c(4 × 2)-O interface, provide insight into the atomic structures of oxide/III-V interfaces and a way to control the semiconductor oxidation.

  18. Al2O3 Scale Development on Iron Aluminides

    SciTech Connect

    Zhang, Xiao-Feng; Thaidigsmann, Katja; Ager, Joel; Hou, Peggy Y.

    2005-11-10

    The structure and phase of the Al{sub 2}O{sub 3} scale that forms on an Fe{sub 3}Al-based alloy (Fe-28Al-5Cr) (at %) was investigated by transmission electron microscopy (TEM) and photoluminescence spectroscopy (PL). Oxidation was performed at 900 C and 1000 C for up to 190 min. TEM revealed that single-layer scales were formed after short oxidation times. Electron diffraction was used to show that the scales are composed of nanoscale crystallites of the {theta}, {gamma}, and {alpha} phases of alumina. Band-like structure was observed extending along three 120{sup o}-separated directions within the surface plane. Textured {theta} and {gamma} grains were the main components of the bands, while mixed {alpha} and transient phases were found between the bands. Extended oxidation produced a double-layered scale structure, with a continuous {alpha} layer at the scale/alloy interface, and a {gamma}/{theta} layer at the gas surface. The mechanism for the formation of Al{sub 2}O{sub 3} scales on iron aluminide alloys is discussed and compared to that for nickel aluminide alloys.

  19. Superconductivity in Al/Al2O3 interface

    NASA Astrophysics Data System (ADS)

    Palnichenko, A. V.; Vyaselev, O. M.; Mazilkin, A. A.; Khasanov, S. S.

    2016-06-01

    Metastable superconductivity at Tc ≈ 65 K has been observed in Al foil subjected to special oxidation process, according to the ac magnetic susceptibility and electrical resistance measurements. Comparison of the ac susceptibility and the dc magnetization measurements infers that the superconductivity arises within the interfacial granular layer formed during the oxidation process between metallic aluminum and its oxide.

  20. Thermoluminescence studies of γ-irradiated Al2O3:Ce3+ phosphor

    NASA Astrophysics Data System (ADS)

    Reddy, S. Satyanarayana; Nagabhushana, K. R.; Singh, Fouran

    2016-07-01

    Pure and Ce3+ doped Al2O3 phosphors were synthesized by solution combustion method. The synthesized samples were characterized by X-ray diffraction (XRD) and its shows α-phase of Al2O3. Crystallite size was estimated by Williamson-Hall (W-H) method and found to be 49, 59 and 84 nm for pure, 0.1 mol% and 1 mol% Ce3+ doped Al2O3 respectively. Trace elemental analysis of undoped Al2O3 shows impurities viz. Fe, Cr, Mn, Mg, Ti, etc. Photoluminescence (PL) spectra of Al2O3:Ce3+ shows emission at 367 nm and excitation peak at 273 nm, which are corresponding to 5D → 4F and 4F → 5D transitions respectively. PL intensity decreases with concentration up to 0.4 mol%, beyond this mol% PL intensity increases with doping concentration up to 2 mol%. Thermoluminescence (TL) studies of γ-rayed pure and Ce3+ doped Al2O3 have been studied. Two well resolved TL glow peaks at 457.5 K and 622 K were observed in pure Al2O3. Additional glow peak at 566 K was observed in Al2O3:Ce3+. Maximum TL intensity was observed for Al2O3:Ce3+ (0.1 mol%) beyond this TL intensity decreases with increasing Ce3+ concentration. Computerized glow curve deconvolution (CGCD) method was used to resolve the multiple peaks and to calculate TL kinetic parameters. Thermoluminescence emission (TLE) spectra of pure Al2O3 glow peaks (457.5 K and 622 K) shows sharp emission at 694 nm and two small humps at 672 nm and 709 nm. The sharp peak at 696 nm corresponds to Cr3+ impurity of 2Eg → 4A2g transition of R lines and 713 nm hump is undoubtedly belongs to Cr3+ emission of near neighbor pairs. The emission at 672 nm is characteristic of Mn4+ impurity ions of 2E → 4A2 transition. TLE of Al2O3:Ce3+ (0.1 mol%) shows additional broad emission at 412 nm corresponds to F-centers. Linearity is observed in the dose range 20-500 Gy in Al2O3:Ce3+ (1 mol%).

  1. Microstructure and properties of the Ti/Al2O3/NiCr composites fabricated by explosive compaction/cladding.

    PubMed

    Wang, Bingfeng; Xie, Fangyu; Wang, Bin; Luo, Xiaozhou

    2015-05-01

    Titanium/aluminum oxide/nickel chromium (Ti/Al2O3/NiCr) composite bar prepared by explosive compaction/cladding technique represents a new kind of sandwich-structural composites for medical application. Formation of the interfaces of Ti/Al2O3 and Al2O3/NiCr govern the properties of the composite material. The electrical resistivity and microstructure of the intermediate layer and the interfaces of the Ti/Al2O3/NiCr explosive compaction/cladding bar are investigated by means of four-point probe analysis, optical microscopy, scanning electron microscopy, electron microprobe analysis, and X-ray diffraction. The Ti/Al2O3/NiCr composite bar is characterized by the consolidated ceramic intermediate layer and the metallurgical bonding interfaces. The intermediate ceramic layer plays a role of insulation and thermal conductance in this composite. The average shear strength of the composite bar is about 9.36 MPa. The heat affected zone characterized by relatively larger sizes of grains is distinguished from the other part of the Ti tube. The intermetallics AlTi3 and Al0.9Ni4.22 are generated at the intermediate ceramic layer. Formation mechanism of the interfaces of the explosive compaction/cladding bar are described.

  2. Optical properties of the Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings

    NASA Astrophysics Data System (ADS)

    Marszałek, Konstanty; Winkowski, Paweł; Jaglarz, Janusz

    2014-01-01

    Investigations of bilayer and trilayer Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings are presented in this paper. The oxide films were deposited on a heated quartz glass by e-gun evaporation in a vacuum of 5 × 10-3 [Pa] in the presence of oxygen. Depositions were performed at three different temperatures of the substrates: 100 °C, 200 °C and 300 °C. The coatings were deposited onto optical quartz glass (Corning HPFS). The thickness and deposition rate were controlled with Inficon XTC/2 thickness measuring system. Deposition rate was equal to 0.6 nm/s for Al2O3, 0.6 nm - 0.8 nm/s for HfO2 and 0.6 nm/s for SiO2. Simulations leading to optimization of the thin film thickness and the experimental results of optical measurements, which were carried out during and after the deposition process, have been presented. The optical thickness values, obtained from the measurements performed during the deposition process were as follows: 78 nm/78 nm for Al2O3/SiO2 and 78 nm/156 nm/78 nm for Al2O3/HfO2/SiO2. The results were then checked by ellipsometric technique. Reflectance of the films depended on the substrate temperature during the deposition process. Starting from 240 nm to the beginning of visible region, the average reflectance of the trilayer system was below 1 % and for the bilayer, minima of the reflectance were equal to 1.6 %, 1.15 % and 0.8 % for deposition temperatures of 100 °C, 200 °C and 300 °C, respectively.

  3. Hybrid composite membranes based on polyethylene separator and Al2O3 nanoparticles for lithium-ion batteries.

    PubMed

    Shin, Won-Kyung; Lee, Yoon-Sung; Kim, Dong-Won

    2013-05-01

    A hybrid composite membrane is prepared by coating nano-sized Al2O3 powder (13 and 50 nm) and poly(vinylidene fluoride-co-hexafluoropropene) (P(VdF-co-HFP)) binder on both sides of polyethylene separator. The composite membrane shows better thermal stability and improved wettability for organic liquid electrolyte than polyethylene separator, due to the presence of heat-resistant Al2O3 particles with high-surface area in the coating layer. By using the composite membrane, the lithium-ion cells composed of carbon anode and LiNi1/3Co1/3Mn1/3O2 cathode are assembled and their cycling performances are evaluated. The cells assembled with the composite membranes are proven to have better capacity retention than the cell prepared with polyethylene separator, due to the enhanced ability to retain the electrolyte solution in the cell. The cell assembled with the composite membrane containing 13 nm-sized Al2O3 particles has an initial discharge capacity of 173.2 mA h g(-1) with good capacity retention.

  4. Effects of annealing on properties of Al2O3 monolayer film at 355 nm

    NASA Astrophysics Data System (ADS)

    Tu, Feifei; Wang, Hu; Xing, Huanbin; Zheng, Ruxi; Zhang, Weili; Yi, Kui

    2015-07-01

    Al2O3 monolayer films were deposited on fused silica substrate and K9 glass substrate by electron-beam deposition. Annealing as a general post-treatment was used to enhance the quality of the Al2O3 coatings. The optical properties of the films were analyzed from the transmission spectra of the samples. The composition of the samples before and after annealing were measured by X-ray photoelectron spectroscopy (XPS). According to the analysis of the results, it can be found that the oxidation degree of the coatings increases after annealing in O2 inside coating chamber. The laser-induced damage thresholds of the Al2O3 films can be increased after the annealing process. Finally, the damage morphologies of the Al2O3 coatings were analyzed.

  5. Production of hydrogen by autothermal reforming of propane over Ni/delta-Al2O3.

    PubMed

    Lee, Hae Ri; Lee, Kwi Yeon; Park, Nam Cook; Shin, Jae Soon; Moon, Dong Ju; Lee, Byung Gwon; Kim, Young Chul

    2006-11-01

    The performance of Ni/delta-Al2O3 catalyst in propane autothermal reforming (ATR) for hydrogen production was investigated in the present study. The catalysts were characterized using XRD, TEM, and SEM. The activity of the Ni/delta-Al2O3 catalyst manufactured by the water-alcohol method was better than those of the catalysts manufactured by the impregnation and chemical reduction methods. The Ni/delta-Al2O3 catalysts were modified by the addition of promoters such as Mg, La, Ce, and Co, in order to improve their stability and yield. Hydrogen production was the largest for the Ni-Co-CeO2/Al2O3, catalyst.

  6. Oxidation of Al2O3 continuous fiber-reinforced/NiAl composites

    NASA Technical Reports Server (NTRS)

    Doychak, J.; Nesbitt, J. A.; Noebe, R. D.; Bowman, R. R.

    1992-01-01

    The 1200 C and 1300 C isothermal and cyclic oxidation behavior of Al2O3 continuous fiber-reinforced/NiAl composites were studied. Oxidation resulted in formation of Al2O3 external scales in a similar manner as scales formed on monolithic NiAl. The isothermal oxidation of an Al2O3/NiAl composite resulted in oxidation of the matrix along the fiber/matrix interface near the fiber ends. This oxide acted as a wedge between the fiber and the matrix, and, under cyclic oxidation conditions, led to further oxidation along the fiber lengths and eventual cracking of the composite. The oxidation behavior of composites in which the Al2O3 fibers were sputter coated with nickel prior to processing was much more severe. This was attributed to open channels around the fibers which formed during processing, most likely as a result of the diffusion of the nickel coating into the matrix.

  7. Microstructure and Mechanical Properties of Al2O3 / A336 Compsite by Low Pressure Infiltratrion

    DTIC Science & Technology

    2011-08-01

    clear and bonds directly with matrix and fiber. It is confirmed by the presence of the γ-Al2O3, MgO from diffraction peaks in the XRD pattern (Fig 4...and EDS (Fig. 3(b),(c)). It suggests that γ-Al2O3, MgO can be produced as results of the interfacial reaction between the Al liquid and the SiO2...results of the reaction between the α-Al2O3 and the MgO , i.e. α-Al2O3+ MgO →MgAl2O4, It was noticed that MgAl2O4 improve wettability, but decrease

  8. Luminescent properties of Al2O3:Ce single crystalline films under synchrotron radiation excitation

    NASA Astrophysics Data System (ADS)

    Zorenko, Yu.; Zorenko, T.; Gorbenko, V.; Savchyn, V.; Voznyak, T.; Fabisiak, K.; Zhusupkalieva, G.; Fedorov, A.

    2016-09-01

    The paper is dedicated to study the luminescent and scintillation properties of the Al2O3:Ce single crystalline films (SCF) grown by LPE method onto saphire substrates from PbO based flux. The structural quality of SCF samples was investigated by XRD method. For characterization of luminescent properties of Al2O3:Ce SCFs the cathodoluminescence spectra, scintillation light yield (LY) and decay kinetics under excitation by α-particles of Pu239 source were used. We have found that the scintillation LY of Al2O3:Ce SCF samples is relatively large and can reach up to 50% of the value realized in the reference YAG:Ce SCF. Using the synchrotron radiation excitation in the 3.7-25 eV range at 10 K we have also determined the basic parameters of the Ce3+ luminescence in Al2O3 host.

  9. Determination of average LET of therapeutic proton beams using Al2O3:C optically stimulated luminescence (OSL) detectors.

    PubMed

    Sawakuchi, Gabriel O; Sahoo, Narayan; Gasparian, Patricia B R; Rodriguez, Matthew G; Archambault, Louis; Titt, Uwe; Yukihara, Eduardo G

    2010-09-07

    In this work we present a methodology and proof of concept to experimentally determine average linear energy transfer (LET) of therapeutic proton beams using the optically stimulated luminescence (OSL) of small Al(2)O(3):C detectors. Our methodology is based on the fact that the shape of the OSL decay curve of Al(2)O(3):C detectors depends on the LET of the radiation field. Thus, one can use the shape of the OSL decay curves to establish an LET calibration curve, which in turn permits measurements of LET. We performed irradiations at the M D Anderson Cancer Center Proton Therapy Center, Houston (PTCH), with passive scattering beams. We determined the average LET of the passive scattering beams using a validated Monte Carlo model of the PTCH passive scattering nozzle and correlated them with the shape of the OSL decay curve to obtain an LET calibration curve. Using this calibration curve and OSL measurements, we determined the averaged LET at various water-equivalent depths for therapeutic spread-out Bragg peaks and compared the results with averaged LETs determined using the Monte Carlo simulations. Agreement between measured and simulated fluence-averaged LET was within 24% for low energy spread-out Bragg peak (SOBP) fields and within 14% for high energy SOBP fields. Agreement between measured and simulated dose-averaged LET was within 12% for low energy SOBP fields and within 47% for high energy SOBP fields. The data presented in this work demonstrated the correlation between the OSL decay curve shapes and the average LET of the radiation fields, providing proof of concept of the feasibility of using OSL from Al(2)O(3):C detectors to measure average LET of therapeutic proton beams.

  10. Determination of average LET of therapeutic proton beams using Al2O3:C optically stimulated luminescence (OSL) detectors

    NASA Astrophysics Data System (ADS)

    Sawakuchi, Gabriel O.; Sahoo, Narayan; Gasparian, Patricia B. R.; Rodriguez, Matthew G.; Archambault, Louis; Titt, Uwe; Yukihara, Eduardo G.

    2010-09-01

    In this work we present a methodology and proof of concept to experimentally determine average linear energy transfer (LET) of therapeutic proton beams using the optically stimulated luminescence (OSL) of small Al2O3:C detectors. Our methodology is based on the fact that the shape of the OSL decay curve of Al2O3:C detectors depends on the LET of the radiation field. Thus, one can use the shape of the OSL decay curves to establish an LET calibration curve, which in turn permits measurements of LET. We performed irradiations at the M D Anderson Cancer Center Proton Therapy Center, Houston (PTCH), with passive scattering beams. We determined the average LET of the passive scattering beams using a validated Monte Carlo model of the PTCH passive scattering nozzle and correlated them with the shape of the OSL decay curve to obtain an LET calibration curve. Using this calibration curve and OSL measurements, we determined the averaged LET at various water-equivalent depths for therapeutic spread-out Bragg peaks and compared the results with averaged LETs determined using the Monte Carlo simulations. Agreement between measured and simulated fluence-averaged LET was within 24% for low energy spread-out Bragg peak (SOBP) fields and within 14% for high energy SOBP fields. Agreement between measured and simulated dose-averaged LET was within 12% for low energy SOBP fields and within 47% for high energy SOBP fields. The data presented in this work demonstrated the correlation between the OSL decay curve shapes and the average LET of the radiation fields, providing proof of concept of the feasibility of using OSL from Al2O3:C detectors to measure average LET of therapeutic proton beams.

  11. Growth of Polarity-Controlled ZnO Films on (0001) Al2O3

    NASA Astrophysics Data System (ADS)

    Park, J. S.; Chang, J. H.; Minegishi, T.; Lee, H. J.; Park, S. H.; Im, I. H.; Hanada, T.; Hong, S. K.; Cho, M. W.; Yao, T.

    2008-05-01

    The polarity control of ZnO films grown on (0001) Al2O3 substrates by plasma-assisted molecular-beam epitaxy (P-MBE) was achieved by using a novel CrN buffer layer. Zn-polar ZnO films were obtained by using a Zn-terminated CrN buffer layer, while O-polar ZnO films were achieved by using a Cr2O3 layer formed by O-plasma exposure of a CrN layer. The mechanism of polarity control was proposed. Optical and structural quality of ZnO films was characterized by high-resolution X-ray diffraction and photoluminescence (PL) spectroscopy. Low-temperature PL spectra of Zn-polar and O-polar samples show dominant bound exciton (I8) and strong free exciton emissions. Finally, one-dimensional periodic structures consisting of Zn-polar and O-polar ZnO films were simultaneously grown on the same substrate. The periodic inversion of polarity was confirmed in terms of growth rate, surface morphology, and piezo response microscopy (PRM) measurement.

  12. Temperature dependence of the dielectric response of anodized Al-Al2O3-metal capacitors

    NASA Astrophysics Data System (ADS)

    Hickmott, T. W.

    2003-03-01

    The temperature dependence of capacitance, CM, and conductance, GM, of Al-Al2O3-metal capacitors with Cu, Ag, and Au electrodes has been measured between 100 and 340 K at seven frequencies between 10 kHz and 1 MHz. Al2O3 films between 15 and 64 nm thick were formed by anodizing evaporated Al films in borate-glycol or borate-H2O electrolyte. The interface capacitance at the Al2O3-metal interface, CI, which is in series with the capacitance CD due to the Al2O3 dielectric, is determined from plots of 1/CM versus insulator thickness. CI is not fixed for a given metal-insulator interface but depends on the vacuum system used to deposit the metal electrode. CI is nearly temperature independent. When CI is taken into account the dielectric constant of Al2O3 determined from capacitance measurements is ˜8.3 at 295 K. The dielectric constant does not depend on anodizing electrolyte, insulator thickness, metal electrode, deposition conditions for the metal electrode or measurement frequency. By contrast, GM of Al-Al2O3-metal capacitors depends on both the deposition conditions of the metal and on the metal. For Al-Al2O3-Cu capacitors, GM is larger for capacitors with large values of 1/CI that result when Cu is evaporated in an oil-pumped vacuum system. For Al-Al2O3-Ag capacitors, GM does not depend on the Ag deposition conditions.

  13. Al/Al2O3 Metal Matrix Composites (MMCs) and Macrocomposites for Armor Applications

    DTIC Science & Technology

    2013-09-01

    ceramics (high hardness, high stiffness, low thermal expansion). In this study , Al/Al2O3 MMCs with alumina particle contents ranging from 12% to 46% were...expansion). In this study , Al/Al2O3 MMCs with alumina particle contents ranging from 12% to 46% were fabricated by different processing approaches...the different MMCs. The matrix alloy, alumina volume fraction, densities, mechanical properties , and thermal properties are summarized in Table 2

  14. Tb3+ ion doping into Al2O3: Solubility limit and luminescence properties

    NASA Astrophysics Data System (ADS)

    Onishi, Yuya; Nakamura, Toshihiro; Adachi, Sadao

    2016-11-01

    Tb3+-activated Al2O3 phosphors with a molar ratio of \\text{Al}:\\text{Tb} = (1 - x):x are synthesized by metal organic decomposition (x = 0-0.15) and subsequent calcination at T c = 200-1200 °C for 1 h in air. The material properties of the synthesized phosphors are investigated by X-ray diffraction (XRD), photoluminescence (PL) analyses, PL excitation spectroscopy, and luminescence lifetime measurements. At x = 0.015, the metastable phase of γ-Al2O3 is obtained by calcination at T c ˜ 300-1050 °C and a mixture of γ, θ, and α phases at T c ˜ 1050-1150 °C. The high-temperature stable phase of α-Al2O3 is obtained only at T c ≥ 1150 °C. Below T c ˜ 300 °C, the XRD data suggest the formation of boehmite (AlOOH). The solubility limit of Tb3+ in α-Al2O3 is also clearly determined to be x ˜ 0.015 (1.5%). The PL decay time of the Tb3+ green emission in α-Al2O3 is ˜1.1 ms for x < 0.015 and slowly decreases with further increase in x (Tb3+). The schematic energy-level diagram of Tb3+ in α-Al2O3 is proposed for a better understanding of the present phosphor system. Finally, the temperature dependence of the PL intensity is examined between T = 20 and 450 K, yielding quenching energies of E q ˜ 0.28 eV (α-Al2O3 and γ-Al2O3).

  15. Postperovskite phase equilibria in the MgSiO3-Al2O3 system.

    PubMed

    Tsuchiya, Jun; Tsuchiya, Taku

    2008-12-09

    We investigate high-P,T phase equilibria of the MgSiO(3)-Al(2)O(3) system by means of the density functional ab initio computation methods with multiconfiguration sampling. Being different from earlier studies based on the static substitution properties with no consideration of Rh(2)O(3)(II) phase, present calculations demonstrate that (i) dissolving Al(2)O(3) tends to decrease the postperovskite transition pressure of MgSiO(3) but the effect is not significant ( approximately -0.2 GPa/mol% Al(2)O(3)); (ii) Al(2)O(3) produces the narrow perovskite+postperovskite coexisting P,T area (approximately 1 GPa) for the pyrolitic concentration (x(Al2O3) approximately 6 mol%), which is sufficiently responsible to the deep-mantle D'' seismic discontinuity; (iii) the transition would be smeared (approximately 4 GPa) for the basaltic Al-rich composition (x(Al2O3) approximately 20 mol%), which is still seismically visible unless iron has significant effects; and last (iv) the perovskite structure spontaneously changes to the Rh(2)O(3)(II) with increasing the Al concentration involving small displacements of the Mg-site cations.

  16. Image reconstruction algorithm for optically stimulated luminescence 2D dosimetry using laser-scanned Al2O3:C and Al2O3:C,Mg films

    NASA Astrophysics Data System (ADS)

    Ahmed, M. F.; Schnell, E.; Ahmad, S.; Yukihara, E. G.

    2016-10-01

    The objective of this work was to develop an image reconstruction algorithm for 2D dosimetry using Al2O3:C and Al2O3:C,Mg optically stimulated luminescence (OSL) films imaged using a laser scanning system. The algorithm takes into account parameters associated with detector properties and the readout system. Pieces of Al2O3:C films (~8 mm  ×  8 mm  ×  125 µm) were irradiated and used to simulate dose distributions with extreme dose gradients (zero and non-zero dose regions). The OSLD film pieces were scanned using a custom-built laser-scanning OSL reader and the data obtained were used to develop and demonstrate a dose reconstruction algorithm. The algorithm includes corrections for: (a) galvo hysteresis, (b) photomultiplier tube (PMT) linearity, (c) phosphorescence, (d) ‘pixel bleeding’ caused by the 35 ms luminescence lifetime of F-centers in Al2O3, (e) geometrical distortion inherent to Galvo scanning system, and (f) position dependence of the light collection efficiency. The algorithm was also applied to 6.0 cm  ×  6.0 cm  ×  125 μm or 10.0 cm  ×  10.0 cm  ×  125 µm Al2O3:C and Al2O3:C,Mg films exposed to megavoltage x-rays (6 MV) and 12C beams (430 MeV u-1). The results obtained using pieces of irradiated films show the ability of the image reconstruction algorithm to correct for pixel bleeding even in the presence of extremely sharp dose gradients. Corrections for geometric distortion and position dependence of light collection efficiency were shown to minimize characteristic limitations of this system design. We also exemplify the application of the algorithm to more clinically relevant 6 MV x-ray beam and a 12C pencil beam, demonstrating the potential for small field dosimetry. The image reconstruction algorithm described here provides the foundation for laser-scanned OSL applied to 2D dosimetry.

  17. Image reconstruction algorithm for optically stimulated luminescence 2D dosimetry using laser-scanned Al2O3:C and Al2O3:C,Mg films.

    PubMed

    Ahmed, M F; Schnell, E; Ahmad, S; Yukihara, E G

    2016-10-21

    The objective of this work was to develop an image reconstruction algorithm for 2D dosimetry using Al2O3:C and Al2O3:C,Mg optically stimulated luminescence (OSL) films imaged using a laser scanning system. The algorithm takes into account parameters associated with detector properties and the readout system. Pieces of Al2O3:C films (~8 mm  ×  8 mm  ×  125 µm) were irradiated and used to simulate dose distributions with extreme dose gradients (zero and non-zero dose regions). The OSLD film pieces were scanned using a custom-built laser-scanning OSL reader and the data obtained were used to develop and demonstrate a dose reconstruction algorithm. The algorithm includes corrections for: (a) galvo hysteresis, (b) photomultiplier tube (PMT) linearity, (c) phosphorescence, (d) 'pixel bleeding' caused by the 35 ms luminescence lifetime of F-centers in Al2O3, (e) geometrical distortion inherent to Galvo scanning system, and (f) position dependence of the light collection efficiency. The algorithm was also applied to 6.0 cm  ×  6.0 cm  ×  125 μm or 10.0 cm  ×  10.0 cm  ×  125 µm Al2O3:C and Al2O3:C,Mg films exposed to megavoltage x-rays (6 MV) and (12)C beams (430 MeV u(-1)). The results obtained using pieces of irradiated films show the ability of the image reconstruction algorithm to correct for pixel bleeding even in the presence of extremely sharp dose gradients. Corrections for geometric distortion and position dependence of light collection efficiency were shown to minimize characteristic limitations of this system design. We also exemplify the application of the algorithm to more clinically relevant 6 MV x-ray beam and a (12)C pencil beam, demonstrating the potential for small field dosimetry. The image reconstruction algorithm described here provides the foundation for laser-scanned OSL applied to 2D dosimetry.

  18. Nanocomposite YCrO3/Al2O3: characterization of the core-shell, magnetic properties, and enhancement of dielectric properties.

    PubMed

    Durán, A; Tiznado, H; Romo-Herrera, J M; Domínguez, D; Escudero, R; Siqueiros, J M

    2014-05-19

    Multifuncionality in polycrystalline multiferroic ceramics can be improved using an advanced synthesis process. In this work, core-shell design is being proposed to enhance the transport properties of biferroic YCrO3. The atomic layer deposition (ALD) thin-film growth technique was used for the YCrO3/Al2O3 (Y@Al) nanocomposite fabrication. A continuous, amorphous, and uniform Al2O3 shell, a few nanometers thick, was obtained and characterized by X-ray photoelectron spectroscopy, X-ray diffraction, and high-resolution transmission electron microscopy. The transport properties of biferroic YCrO3 coated with 50, 500, and 1000 ALD cycles of insulating Al2O3 were investigated using magnetization and AC conductivity measurements. It is observed that the values of the magnetic coercive field and the magnetization are affected by the amorphous and partially crystallized Al2O3 shell. Additionally, the Y@Al nanocomposite experiments show a notorious decreasing in the loss tangent and the electrical conductivity. Accordingly, hysteresis loops in the polarization versus electric energy data confirm the decrease of the leakage current as a consequence of the Al2O3 shell acting as a barrier layer. The results shown here confirm that the core-shell architecture is a promising alternative for improvement of the magnetic and ferroelectric properties in bulk multiferroics.

  19. Studies on oxidation and deuterium permeation behavior of a low temperature α-Al2O3-forming Fesbnd Crsbnd Al ferritic steel

    NASA Astrophysics Data System (ADS)

    Xu, Yu-Ping; Zhao, Si-Xiang; Liu, Feng; Li, Xiao-Chun; Zhao, Ming-Zhong; Wang, Jing; Lu, Tao; Hong, Suk-Ho; Zhou, Hai-Shan; Luo, Guang-Nan

    2016-08-01

    To evaluate the capability of Fesbnd Crsbnd Al ferritic steels as tritium permeation barrier in fusion systems, the oxidation behavior together with the permeation behavior of a Fesbnd Crsbnd Al steel was investigated. Gas driven permeation experiments were performed. The permeability of the oxidized Fesbnd Crsbnd Al steel was obtained and a reduced activation ferritic/martensitic steel CLF-1 was used as a comparison. In order to characterize the oxide layer, SEM, XPS, TEM, HRTEM were used. Al2O3 was detected in the oxide film by XPS, and HRTEM showed that Al2O3 in the α phase was found. The formation of α-Al2O3 layer at a relatively low temperature may result from the formation of Cr2O3 nuclei.

  20. Impacts of Annealing Conditions on the Flat Band Voltage of Alternate La2O3/Al2O3 Multilayer Stack Structures

    NASA Astrophysics Data System (ADS)

    Feng, Xing-Yao; Liu, Hong-Xia; Wang, Xing; Zhao, Lu; Fei, Chen-Xi; Liu, He-Lei

    2016-09-01

    The mechanism of flat band voltage (VFB) shift for alternate La2O3/Al2O3 multilayer stack structures in different annealing condition is investigated. The samples were prepared for alternate multilayer structures, which were annealed in different conditions. The capacitance-voltage (C-V) measuring results indicate that the VFB of samples shift negatively for thinner bottom Al2O3 layer, increasing annealing temperature or longer annealing duration. Simultaneously, the diffusion of high- k material to interfaces in different multilayer structures and annealing conditions is observed by X-ray photoelectron spectroscopy (XPS). Based on the dipole theory, a correlation between the diffusion effect of La towards bottom Al2O3/Si interface and VFB shift is found. Without changing the dielectric constant k of films, VFB shift can be manipulated by controlling the single-layer cycles and annealing conditions of alternate high- k multilayer stack.

  1. Structural and mechanical characterization of Al/Al2O3 nanotube thin film on TiV alloy

    NASA Astrophysics Data System (ADS)

    Sarraf, M.; Zalnezhad, E.; Bushroa, A. R.; Hamouda, A. M. S.; Baradaran, S.; Nasiri-Tabrizi, B.; Rafieerad, A. R.

    2014-12-01

    In this study, the fabrication and characterization of Al/Al2O3 nanotubular arrays on Ti-6Al-4V substrate were carried out. To this end, aluminum thin films were deposited as a first coating layer by direct current (DC) magnetron sputtering with the coating conditions of 300 W, 150 °C and 75 V substrate bias voltage. Al2O3 nanotube array as a second layer was grown on the Al layer by electrochemical anodisation at the constant potential of 20 V within different time periods in an electrolyte solution. For annealing the coated substrates, plasma treatment (PT) technique was utilized under various conditions to get the best adhesion strength of coating to the substrate. To characterize the coating layers, micro scratch test, Vickers hardness and field emission of scanning electron microscopy (FESEM) were used. Results show that after the deposition of pure aluminum on the substrate the scratch length, load and failure point were 794.37 μm, 1100 mN and 411.43 μm, respectively. After PT, the best adhesion strength (2038 mN) was obtained at RF power of 60 W. With the increase of the RF power up to 80 W, a reduction in adhesion strength was observed (1525.22 mN). From the microstructural point of view, a homogenous porous structure with an average pore size of 40-60 nm was formed after the anodisation for 10-45 min. During PT, the porous structure was converted to dense alumina layer when the RF power rose from 40 to 80 W. This led to an increase in hardness value from 2.7 to 3.4 GPa. Based on the obtained data, the RF power of 60 W was the optimum condition for plasma treatment of Al/Al2O3 nanotubular arrays on Ti-6Al-4V substrate.

  2. The chemisorption of H2O, HCOOH and CH3COOH on thin amorphous films of Al2O3

    NASA Technical Reports Server (NTRS)

    Lewis, B. F.; Weinberg, W. H.; Mosesman, M.

    1974-01-01

    Investigation of the irreversible chemisorption of water, formic acid and acetic acid on a thin amorphous aluminum oxide film, using inelastic tunneling spectroscopy. All of the tunnel junctions employed were Al-Al2O3-Pb junctions with the adsorbate on the Al2O3 surface between the Al2O3 and the Pb electrode. The results obtained include the finding that all Al2O3 surfaces prepared by oxidation of Al have free CH groups present on them.

  3. Dependence of electron mobility on gate voltage sweeping width and deposition temperature in MOSFETs with HfO2/Al2O3/InGaAs gate stacks

    NASA Astrophysics Data System (ADS)

    Ohsawa, Kazuto; Netsu, Seiko; Kise, Nobukazu; Noguchi, Shinji; Miyamoto, Yasuyuki

    2017-04-01

    In this study, we fabricated MOSFETs with Al2O3/InGaAs or HfO2/Al2O3/InGaAs gate stacks. The surface was subjected to nitrogen plasma and trimethylaluminum cleaning prior to low-temperature atomic layer deposition. Electron mobility was extracted using the capacitance–gate voltage (C–V G) and drain current–gate voltage (I D–V G) characteristics. We determined that the mobility decreased when the gate voltage sweeping width increased during C–V G and I D–V G measurements. In addition, we determined that the lowering of the deposition temperature to 120 °C improved the mobility of MOSFETs with HfO2/Al2O3/InGaAs gate stacks as compared with that corresponding to deposition at 300 °C. Furthermore, HfO2/Al2O3/InGaAs gate stacks with various Al2O3 thicknesses were fabricated. When the number of Al2O3 deposition cycles was more than 4, the mobility of MOSFETs with HfO2/Al2O3/InGaAs gate stacks improved, reaching the value of the Al2O3/InGaAs gate stack.

  4. High-k ZrO2/Al2O3 bilayer on hydrogenated diamond: Band configuration, breakdown field, and electrical properties of field-effect transistors

    NASA Astrophysics Data System (ADS)

    Liu, J. W.; Liao, M. Y.; Imura, M.; Koide, Y.

    2016-09-01

    A band configuration of a high-k ZrO2/Al2O3 bilayer on hydrogenated diamond (H-diamond), a breakdown field (EB) of the ZrO2/Al2O3 bilayer, and an effect of gate-drain distance (dG-D) on electrical properties of ZrO2/Al2O3/H-diamond metal-insulator-semiconductor field-effect transistors (MISFETs) have been investigated. The Al2O3 and ZrO2 layers are successively deposited on H-diamond by atomic layer deposition (ALD) and sputtering-deposition (SD) techniques, respectively. The thin ALD-Al2O3 buffer layer with 4.0 nm thickness plays a role in protecting the H-diamond surface from being damaged by the plasma discharge during SD-ZrO2 deposition. The ZrO2/Al2O3 heterojunction has a type I band structure with valence and conduction band offsets of 0.6 ± 0.2 and 1.0 ± 0.2 eV, respectively. The valence band offset between ZrO2 and H-diamond is deduced to be 2.3 ± 0.2 eV. The EB of the ZrO2/Al2O3 bilayer is measured to be 5.2 MV cm-1, which is larger than that of the single ZrO2 layer due to the existence of the ALD-Al2O3 buffer layer. The dependence of dG-D on drain-source current maximum (IDS,max), on-resistance (RON), threshold voltage (VTH), and extrinsic transconductance maximum (gm,max) of the MISFETs has been investigated. With increasing dG-D from 4 to 18 μm, the absolute IDS,max decreases from 72.7 to 40.1 mA mm-1, and the RON increases linearly from 83.3 ± 5 to 158.7 ± 5 Ω mm. Variation of VTH values of around 1.0 V is observed, and the gm,max is in the range between 8.0 ± 0.1 and 13.1 ± 0.1 mS mm-1.

  5. Residual Stress in Brazing of Submicron Al2O3 to WC-Co

    NASA Astrophysics Data System (ADS)

    Grunder, T.; Piquerez, A.; Bach, M.; Mille, P.

    2016-07-01

    This study evaluated the residual stresses induced by brazing and grinding submicron Al2O3, using different methods. Energy dispersive x-ray spectrometry analysis (EDX) of 72Ag-Cu filler and filler/WC-Co interface showed evidence of atomic diffusion and possible formation of titanium oxide layers between the joint and the bonding materials. An analytical model supported by the finite element method (FEM) based on strain determination due to the difference in variation of thermal expansion was used to assess the stress distribution at the coupling interface and in bulk materials. The model took into account the evolution of the Young's modulus and of the thermal expansion with temperature. The model could be used to follow strain and stress evolutions of the bonded materials during the cooling cycle. The maximum stress rose above -300 MPa at the center of the 100 × 100 × 3 mm ceramic plates. The residual stresses on the external surface of ceramic were investigated by x-ray diffraction (XRD) and indentation fracture method (IFM). After brazing and grinding the plate, the principal stresses were 128.1 and 94.9 MPa, and the shear stress was -20.1 MPa. Microscopic examination revealed grain pull-out promoted by the global residual stresses induced by the brazing and grinding processes. The surface stresses evaluated by the different methods were reasonably correlated.

  6. Interface considerations in Al2O3/NiAl composite

    NASA Technical Reports Server (NTRS)

    Misra, Ajay K.

    1993-01-01

    The fiber-matrix interface requirements in an Al2O3/NiAl composite were examined from theoretical considerations. Several factors that influence the interface bonding requirements were analyzed. These include: (1) residual stresses due to fiber-matrix coefficient of thermal expansion (CTE) mismatch; (2) matrix cracking stress at room temperature; (3) fracture toughness at room temperature; (4) load transfer from the matrix to the fiber and ultimate tensile strength at the use temperature; and (5) creep resistance at high temperature. A relatively weak fiber-matrix bond, with an interfacial shear strength of approximately 15-20 MPa, might be sufficient for attaining the desired mechanical properties in the fiber direction at the use temperature. A weak fiber-matrix bond is also beneficial for increasing the fracture toughness of the composite at room temperature. In contrast, a strong fiber-matrix bond is required to withstand some of the residual stresses resulting from the fiber-matrix CTE mismatch, which are not likely to be reduced significantly by interface coatings. A relatively strong bond is also beneficial in increasing the matrix cracking stress at room temperature. Various interface coating options to accommodate the conflicting bonding requirements were reviewed. One viable coating option is to incorporate a thick, ductile interface layer well bonded to both the fiber and the matrix.

  7. Mechanical and morphological properties of polypropylene/nano α-Al2O3 composites.

    PubMed

    Mirjalili, F; Chuah, L; Salahi, E

    2014-01-01

    A nanocomposite containing polypropylene (PP) and nano α-Al2O3 particles was prepared using a Haake internal mixer. Mechanical tests, such as tensile and flexural tests, showed that mechanical properties of the composite were enhanced by addition of nano α-Al2O3 particles and dispersant agent to the polymer. Tensile strength was approximately ∼ 16% higher than pure PP by increasing the nano α-Al2O3 loading from 1 to 4 wt% into the PP matrix. The results of flexural analysis indicated that the maximum values of flexural strength and flexural modulus for nanocomposite without dispersant were 50.5 and 1954 MPa and for nanocomposite with dispersant were 55.88 MPa and 2818 MPa, respectively. However, higher concentration of nano α-Al2O3 loading resulted in reduction of those mechanical properties that could be due to agglomeration of nano α-Al2O3 particles. Transmission and scanning electron microscopic observations of the nanocomposites also showed that fracture surface became rougher by increasing the content of filler loading from 1 to 4% wt.

  8. Photochemistry of the α-Al2O3-PETN interface

    DOE PAGES

    Tsyshevsky, Roman V.; Zverev, Anton; Mitrofanov, Anatoly; ...

    2016-02-29

    Optical absorption measurements are combined with electronic structure calculations to explore photochemistry of an α-Al2O3-PETN interface formed by a nitroester (pentaerythritol tetranitrate, PETN, C5H8N4O12) and a wide band gap aluminum oxide (α-Al2O3) substrate. The first principles modeling is used to deconstruct and interpret the α-Al2O3-PETN absorption spectrum that has distinct peaks attributed to surface F0-centers and surfacePETN transitions. We predict the low energy α-Al2O3 F0-centerPETN transition, producing the excited triplet state, and α-Al2O3 F-0-centerPETN charge transfer, generating the PETN anion radical. This implies that irradiation by commonly used lasers can easily initiate photodecomposition of both excited and charged PETN atmore » the interface. As a result, the feasible mechanism of the photodecomposition is proposed.« less

  9. Mechanical and Morphological Properties of Polypropylene/Nano α-Al2O3 Composites

    PubMed Central

    Mirjalili, F.; Chuah, L.; Salahi, E.

    2014-01-01

    A nanocomposite containing polypropylene (PP) and nano α-Al2O3 particles was prepared using a Haake internal mixer. Mechanical tests, such as tensile and flexural tests, showed that mechanical properties of the composite were enhanced by addition of nano α-Al2O3 particles and dispersant agent to the polymer. Tensile strength was approximately ∼16% higher than pure PP by increasing the nano α-Al2O3 loading from 1 to 4 wt% into the PP matrix. The results of flexural analysis indicated that the maximum values of flexural strength and flexural modulus for nanocomposite without dispersant were 50.5 and 1954 MPa and for nanocomposite with dispersant were 55.88 MPa and 2818 MPa, respectively. However, higher concentration of nano α-Al2O3 loading resulted in reduction of those mechanical properties that could be due to agglomeration of nano α-Al2O3 particles. Transmission and scanning electron microscopic observations of the nanocomposites also showed that fracture surface became rougher by increasing the content of filler loading from 1 to 4% wt. PMID:24688421

  10. Raman spectroscopic study of Ni/Al 2O 3 catalyst

    NASA Astrophysics Data System (ADS)

    Aminzadeh, A.; Sarikhani-fard, H.

    1999-07-01

    In this article a preliminary Raman spectroscopic study of Ni/Al 2O 3 catalyst of the type used for the steam reformation of methane is reported. With several prepared samples of this catalyst and using FT-Raman and conventional dispersive Raman technique, it is shown how Raman spectroscopy can be used to monitor the exact conditions during the preparation of the catalyst. Raman data shows that despite a strong fluorescence background, some useful information can be obtained. According to these data, when the calcination temperature is raised above 1000°C, the gamma alumina ( γ-Al 2O 3) is converted to alpha alumina ( α-Al 2O 3) as it is expected. It further shows that Ni is not present as NiO: it is probably embedded in the crystal structure of γ-Al 2O 3 as NiAl 2O 4 (the spinel structure) or constituted as a solid solution with Al 2O 3.

  11. (100) facets of γ-Al2O3: the active surfaces for alcohol dehydration reactions

    SciTech Connect

    Kwak, Ja Hun; Mei, Donghai; Peden, Charles HF; Rousseau, Roger J.; Szanyi, Janos

    2011-05-01

    Temperature programmed desorption (TPD) of ethanol, and methanol dehydration reaction were studied on γ-Al2O3 in order to identify the catalytic active sites for alcohol dehydration reactions. Two high temperature (> 473 K) desorption features were observed following ethanol adsorption. Samples calcined at T≤473 K displayed a desorption feature in the 523-533 K temperature range, while those calcined at T ≥ 673 K showed a single desorption feature at 498 K. The switch from the high to low temperature ethanol desorption correlated well with the dehydroxylation of the (100) facets of γ-Al2O3 that was predicted at 550 K DFT calculations. Theoretical DFT simulations of the mechanism of dehydration. on clean and hydroxylated γ-Al2O3(100) surfaces, find that a concerted elimination of ethylene from an ethanol molecule chemisorbed at an Al3+ pentacoordinated site is the rate limiting step for catalytic cycle on both surfaces. Furthermore, titration of the pentacoordinate Al3+ sites on the (100) facets of γ-Al2O3 by BaO completely turned off the methanol dehydration reaction activity. These results unambiguously demonstrate that only the (100) facets on γ-Al2O3 are the catalytic active surfaces for alcohol dehydration.

  12. Directionally solidified Al2O3/GAP eutectic ceramics by micro-pulling-down method

    NASA Astrophysics Data System (ADS)

    Cao, Xue; Su, Haijun; Guo, Fengwei; Tan, Xi; Cao, Lamei

    2016-11-01

    We reported a novel route to prepare directionally solidified (DS) Al2O3/GAP eutectic ceramics by micro-pulling-down (μ-PD) method. The eutectic crystallizations, microstructure characters and evolutions, and their mechanical properties were investigated in detail. The results showed that the Al2O3/GAP eutectic composites can be successfully fabricated through μ-PD method, possessed smooth surface, full density and large crystal size (the maximal size: φ90 mm × 20 mm). At the process of Diameter, the as-solidified Al2O3/GAP eutectic presented a combination of "Chinese script" and elongated colony microstructure with complex regular structure. Inside the colonies, the rod-type or lamellar-type eutectic microstructures with ultra-fine GAP surrounded by the Al2O3 matrix were observed. At an appropriate solidificational rate, the binary eutectic exhibited a typical DS irregular eutectic structure of "chinese script" consisting of interpenetrating network of α-Al2O3 and GAP phases without any other phases. Therefore, the interphase spacing was refined to 1-2 µm and the irregular microstructure led to an outstanding vickers hardness of 17.04 GPa and fracture toughness of 6.3 MPa × m1/2 at room temperature.

  13. Biocompatibility and bioactivity enhancement of Ce stabilized ZrO(2) doped HA coatings by controlled porosity change of Al(2) O(3) substrates.

    PubMed

    Sima, Felix; Ristoscu, Carmen; Caiteanu, Diana; Mihailescu, Cristian N; Stefan, Nicolaie; Mihailescu, Ion N; Prodan, Gabriel; Ciupina, Victor; Palcevskis, Eriks; Krastins, Janis; Sima, Livia E; Petrescu, Stefana M

    2011-02-01

    Al(2) O(3) substrates with controlled porosity were manufactured from nanosized powders obtained by plasma processing. It was observed that when increasing the sintering temperature the overall porosity was decreasing, but the pores got larger. In a second step, Ce stabilized ZrO(2) doped hydroxyapatite coatings were pulsed laser deposited onto the Al(2) O(3) substrates. It was shown that the surface morphology, consisting of aggregates and particulates in micrometric range, was altered by the substrate porosity and interface properties, respectively. TEM studies evidenced that Ce stabilized ZrO(2) doped HA particulates ranged from 10 to 50 nm, strongly depending on the Al(2) O(3) porosity. The coatings consisted of HA nanocrystals embedded in an amorphous matrix quite similar to the bone structure. These findings were congruent with the increased biocompatibility and bioactivity of these layers confirmed by enhanced growing and proliferation of human mesenchymal stem cells.

  14. A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnOx-Al2O3 thin film structure

    NASA Astrophysics Data System (ADS)

    Li, H. K.; Chen, T. P.; Liu, P.; Hu, S. G.; Liu, Y.; Zhang, Q.; Lee, P. S.

    2016-06-01

    In this work, a synaptic transistor based on the indium gallium zinc oxide (IGZO)-aluminum oxide (Al2O3) thin film structure, which uses ultraviolet (UV) light pulses as the pre-synaptic stimulus, has been demonstrated. The synaptic transistor exhibits the behavior of synaptic plasticity like the paired-pulse facilitation. In addition, it also shows the brain's memory behaviors including the transition from short-term memory to long-term memory and the Ebbinghaus forgetting curve. The synapse-like behavior and memory behaviors of the transistor are due to the trapping and detrapping processes of the holes, which are generated by the UV pulses, at the IGZO/Al2O3 interface and/or in the Al2O3 layer.

  15. Oxides formation on hydrophilic bonding interface in plasma-assisted InP/Al2O3/SOI direct wafer bonding

    NASA Astrophysics Data System (ADS)

    Gong, Kewei; Sun, Changzheng; Xiong, Bing; Han, Yanjun; Hao, Zhibiao; Wang, Jian; Wang, Lai; Li, Hongtao

    2017-01-01

    Successful direct wafer bonding between InP and silicon-on-insulator (SOI) wafers has been demonstrated by adopting a 20-nm-thick Al2O3 as the intermediate layer. A detailed investigation on the property of the bonding interface is carried out. Water contact angle test reveals an improved hydrophilicity for both the InP and the Al2O3/SOI wafers after oxygen plasma surface activation. X-ray photoelectron spectroscopy is employed to characterize the bonding interface before and after the wafer bonding process. It is found that oxides are formed on the bonding interface during bonding, which helps ensure high quality hydrophilic bonding.

  16. Reduced temperature and bias-voltage dependence of the magnetoresistance in magnetic tunnel junctions with Hf-inserted Al2O3 barrier

    NASA Astrophysics Data System (ADS)

    Park, Byong Guk; Lee, Taek Dong

    2002-09-01

    A modified tunnel barrier structure for the magnetic tunnel junction (MTJ) was fabricated by inserting a Hf layer in the middle of the Al2O3 tunnel barrier. MTJs with the Hf-inserted barrier show a higher tunnel mangnetoresistance (TMR) ratio and weaker temperature and bias-voltage dependence of TMR compared to the MTJs with a conventional Al2O3 barrier. The enhancement of the TMR ratio and the reduction of the temperature and bias-voltage dependence were attributed to the reduction of defects in the barrier.

  17. A novel 3D covalent organic framework membrane grown on a porous α-Al2O3 substrate under solvothermal conditions.

    PubMed

    Lu, Hui; Wang, Chang; Chen, Juanjuan; Ge, Rile; Leng, Wenguang; Dong, Bin; Huang, Jun; Gao, Yanan

    2015-11-04

    A novel approach to grow a 3D COF-320 membrane on a surface-modified porous α-Al2O3 substrate is developed. A compact and uniform COF-320 membrane with a layer thickness of ∼4 μm is obtained. This is the first reported 3D COF functional membrane fabricated successfully on a common porous α-Al2O3 ceramic support. The gas permeation results indicate that the gas transport behavior is mainly governed by the predicted Knudsen diffusion process due to the large nanopores of 3D COF-320.

  18. Glycerol Steam Reforming Over Ni-Fe-Ce/Al2O3 Catalyst: Effect of Cerium.

    PubMed

    Go, Gwang-Sub; Go, Yoo-Jin; Lee, Hong-Joo; Moon, Dong-Ju; Park, Nam-Cook; Kim, Young-Chul

    2016-02-01

    In this work, hydrogen production from glycerol by steam reforming was studied using Ni-metal oxide catalysts. Ni-based catalyst becomes deactivated during steam reforming reactions because of coke deposits and sintering. Therefore, the aim of this study was to reduce carbon deposits and sintering on the catalyst surface by adding a promoter. Ni-metal oxide catalysts supported on Al2O3 were prepared via impregnation method, and the calcined catalyst was reduced under H2 flow for 2 h prior to the reaction. The characteristics of the catalysts were examined by XRD, TPR, TGA, and SEM. The Ni-Fe-Ce/Al2O3 catalyst, which contained less than 2 wt% Ce, showed the highest hydrogen selectivity and glycerol conversion. Further analysis of the catalysts revealed that the Ni-Fe-Ce/Al2O3 catalyst required a lower reduction temperature and produced minimum carbon deposit.

  19. Anchorage of γ-Al2O3 nanoparticles on nitrogen-doped multiwalled carbon nanotubes

    DOE PAGES

    Rodríguez-Pulido, A.; Martínez-Gutiérrez, H.; Calderon-Polania, G. A.; ...

    2016-06-07

    Nitrogen-doped multiwalled carbon nanotubes (CNx-MWNTs) have been decorated with γ-Al2O3 nanoparticles by a novel method. This process involved a wet chemical approach in conjunction with thermal treatment. During the particle anchoring process, individual CNx-MWNT nanotubes agglomerated into bundles, resulting in arrays of aligned CNx-MWNT coated with γ-Al2O3. Extensive characterization of the resulting γ-Al2O3/CNx-MWNT bundles was performed using a range of electron microscopy imaging and microanalytical techniques. In conclusion, a possible mechanism explaining the nanobundle alignment is described, and possible applications of these materials for the fabrication of ceramic composites using CNx-MWNTs are briefly discussed.

  20. Growth, Quantitative Growth Analysis, and Applications of Graphene on γ-Al2O3 catalysts

    PubMed Central

    Park, Jaehyun; Lee, Joohwi; Choi, Jung-Hae; Hwang, Do Kyung; Song, Yong-Won

    2015-01-01

    The possibilities offered by catalytic γ-Al2O3 substrates are explored, and the mechanism governing graphene formation thereon is elucidated using both numerical simulations and experiments. The growth scheme offers metal-free synthesis at low temperature, grain-size customization, large-area uniformity of electrical properties, single-step preparation of graphene/dielectric structures, and readily detachable graphene. We quantify based on thermodynamic principles the activation energies associated with graphene nucleation/growth on γ-Al2O3, verifying the low physical and chemical barriers. Importantly, we derive a universal equation governing the adsorption-based synthesis of graphene over a wide range of temperatures in both catalytic and spontaneous growth regimes. Experimental results support the equation, highlighting the catalytic function of γ-Al2O3 at low temperatures. The synthesized graphene is manually incorporated as a ‘graphene sticker’ into an ultrafast mode-locked laser. PMID:26137994

  1. Hard α-Al2O3 Film Coating on Industrial Roller Using Aerosol Deposition Method

    NASA Astrophysics Data System (ADS)

    Seto, Naoki; Endo, Kazuteru; Sakamoto, Nobuo; Hirose, Shingo; Akedo, Jun

    2014-12-01

    It is well known that α-Al2O3 forms very hard, highly insulating, smooth films. There is demand for the use of such films instead of conventional hard, smooth films; For example, industrial rollers such as calendering rollers etc. are always required to have a harder and smoother surface than conventional rollers. Therefore, this work investigated the specification of α-Al2O3 films, e.g., their wear resistance and chemical stability, using various tests. This paper also discusses whether α-Al2O3 film can take the place of Cr plating film as a hard, smooth film by comparing their wear resistance and chemical stability.

  2. Process Capability Analysis of Vacuum Moulding for Development of Al-Al2O3 MMC

    NASA Astrophysics Data System (ADS)

    Singh, R.

    2013-01-01

    The purpose of the present study is to investigate process capability of vacuum moulding (VM) for development of Al-Al2O3 metal matrix composite (MMC). Starting from the identification of component, prototypes were prepared (with three different input parameters namely: vacuum pressure; component volume and sand grit size to give output in form of dimensional accuracy). Measurements on the coordinate measuring machine helped in calculating the dimensional tolerances of the Al-Al2O3 MMC prepared. Some important mechanical properties were also compared to verify the suitability of the components. Final components produced are acceptable as per ISO standard UNI EN 20286-I (1995). The results of study suggest that VM process lies in ±4.5 sigma (σ) limit as regard to dimensional accuracy of Al-Al2O3 MMC is concerned. This process ensures rapid production of pre-series technological prototypes and proof of concept at less production cost and time.

  3. Ionic conductivity and thermoelectric power of pure and Al2O3-dispersed AgI

    NASA Technical Reports Server (NTRS)

    Shahi, K.; Wagner, J. B., Jr.

    1981-01-01

    Ionic and electronic conductivities, and thermoelectric power have been measured for AgI and AgI containing a dispersion of submicron size Al2O3 particles. While the dispersion of Al2O3 enhances the ionic conductivity significantly, it does not affect the electronic properties of the matrix. The enhancement is a strong function of the size and concentration of the dispersoid. Various models have been tested to account for the enhanced conduction. However, the complex behavior of the present results points out the need for more sophisticated theoretical models. Ionic conduction and thermoelectric power data suggest that the dispersed Al2O3 generates an excess of cation vacancies and thereby enhances the conductivity and suppresses the thermoelectric power of the matrix. The individual heats of transport of cation interstitials and vacancies have been estimated and compared to their respective migration energies.

  4. Anomalous nuclear spin-lattice relaxation of 3He in contact with ordered Al2O3 aerogel

    NASA Astrophysics Data System (ADS)

    Alakshin, E. M.; Zakharov, M. Yu.; Klochkov, A. V.; Kuzmin, V. V.; Safiullin, K. R.; Stanislavovas, A. A.; Tagirov, M. S.

    2016-09-01

    Spin-lattice relaxation of 3He in contact with the ordered Al2O3 fiber aerogel has been studied at the temperature of 1.6 K in fields of 0.1-0.5 T by the pulsed nuclear magnetic resonance (NMR) method. An additional mechanism of the relaxation of 3He in aerogels is found and it is shown that this relaxation mechanism is not associated with the adsorbed layer. A hypothesis about the influence of intrinsic paramagnetic centers on the relaxation of gaseous 3He is proposed.

  5. Mechanism for converting Al2O3-containing borate glass to hydroxyapatite in aqueous phosphate solution.

    PubMed

    Zhao, Di; Huang, Wenhai; Rahaman, Mohamed N; Day, Delbert E; Wang, Deping

    2009-05-01

    The effect of replacing varying amounts (0-2.5 mol.%) of B2O3 with Al2O3 in a borate glass on (1) the conversion of the glass to HA in an aqueous phosphate solution and (2) the compressive strength of the as-formed HA product was investigated. Samples of each glass (10 x 10 x 8 mm) were placed in 0.25 M K2HPO4 solution at 60 degrees C, and the conversion kinetics to HA were determined from the weight loss of the glass and the pH of the solution. The structure and composition of the solid reaction products were characterized using X-ray diffraction, Fourier transform infrared spectroscopy and scanning electron microscopy. While the conversion rate of the glass to HA decreased considerably with increasing Al2O3 content, the microstructure of the HA product became denser and the compressive strength of the HA product increased. The addition of SiO2 to the Al2O3-containing borate glass reversed the deterioration of the conversion rate, and produced a further improvement in the strength of the HA product. The compressive strength of the HA formed from the borate glass with 2.5 mol.% Al2O3 and 5 mol.% SiO2 was 11.1 +/- 0.2 MPa, which is equal to the highest strengths reported for trabecular bone. The results indicated that simultaneous additions of Al2O3 and SiO2 could be used to control the bioactivity of the borate glass and to enhance the mechanical strength of the HA product. Furthermore, the HA product formed from the glass containing both SiO2 and Al2O3 could be applied to bone repair.

  6. Effect of AL2O3 and TiO2 nanoparticles on aquatic organisms

    NASA Astrophysics Data System (ADS)

    Gosteva, I.; Morgalev, Yu; Morgaleva, T.; Morgalev, S.

    2015-11-01

    Environmental toxicity of aqueous disperse systems of nanoparticles of binary compounds of titanium dioxides (with particle size Δ50=5 nm, Δ50=50 nm, Δ50=90 nm), aluminum oxide alpha-forms (Δ50=7 nm and Δ50=70 nm) and macro forms (TiO2 Δ50=350 nm, Al2O3 A50=4000 nm) were studied using biological testing methods. The bioassay was performed using a set of test organisms representing the major trophic levels. We found the dependence of the toxic effect concentration degree of nTiO2 and nAl2O3 on the fluorescence of the bacterial biosensor "Ekolyum", the chemotactic response of ciliates Paramecium caudatum, the growth of unicellular algae Chlorella vulgaris Beijer and mortality of entomostracans Daphnia magna Straus. We revealed the selective dependence of nTiO2 and nAl2O3 toxicity on the size, concentration and chemical nature of nanoparticles. The minimal concentration causing an organism's response on nTiO2 and nAl2O3 effect depends on the type of the test- organism and the test reaction under study. We specified L(E)C50 and acute toxicity categories for all the studied nanoparticles. We determined that nTiO2 (Δ50=5 nm) belong to the category «Acute toxicity 1», nTiO2 (A50=90 nm) and nAl2O3 (Δ50=70 nm) - to the category «Acute toxicity 2», nAl2O3 (Δ50=7 nm) - to the category «Acute toxicity 3». No acute toxicity was registered for nTiO2 (Δ50=50 nm) and macro form TiO2.

  7. Study of LDPE/Al2O3 composite material as substrate for microstrip antenna

    NASA Astrophysics Data System (ADS)

    Sarmah, Debashis; Bhattacharyya, N. S.; Bhattacharyya, S.; Gogoi, J. P.

    2013-01-01

    Low density polyethylene (LDPE)/Alumina (Al2O3) composite systems have been studied as an alternate substrate for microstrip patch antennas (MPA). Morphological, thermal and microwave characterizations of the composites are carried out for different volume fractions of Al2O3 in the LDPE matrix. The size and the distribution of alumina particles are quite uniform in the composite. Enhancement of thermal and microwave properties of the composite over the parent polymer is observed. Simple rectangular MPA in X-band is fabricated on the composite material to verify its applicability as substrates for MPA. A return loss of ~ -26dB is observed at the design frequency.

  8. Study of the KNO3-Al2O3 system by differential scanning calorimetry

    NASA Astrophysics Data System (ADS)

    Amirov, A. M.; Gafurov, M. M.; Rabadanov, K. Sh.

    2016-09-01

    The structural and the thermodynamic properties of potassium nitrate KNO3 and its composites with nanosized aluminum oxide Al2O3 have been studied by differential scanning calorimetry. It has been found that an amorphous phase forms in composites (1- x)KNO3- x Al2O3. The thermal effect corresponding to this phase has been observed at 316°C. It has been found that the phase transition heats of potassium nitrate decreased as the aluminum oxide fraction increased.

  9. High Temperature Aerogels in the Al2O3-SiO2 System

    NASA Technical Reports Server (NTRS)

    Hurwitz, Frances I.; Aranda, Denisse V.; Gallagher, Meghan E.

    2008-01-01

    Al2O3-SiO2 aerogels are of interest as constituents of thermal insulation systems for use at high temperatures. Al2O3 and mullite aerogels are expected to crystallize at higher temperatures than their SiO2 counterparts, hence avoiding the shrinkages that accompany the formation of lower temperature SiO2 phases and preserving pore structures into higher temperature regimes. The objective of this work is to determine the influence of processing parameters on shrinkage, gel structure (including surface area, pore size and distribution) and pyrolysis behavior.

  10. The Influence of Al2O3 Powder Morphology on the Properties of Cu-Al2O3 Composites Designed for Functionally Graded Materials (FGM)

    NASA Astrophysics Data System (ADS)

    Strojny-Nędza, Agata; Pietrzak, Katarzyna; Węglewski, Witold

    2016-08-01

    In order to meet the requirements of an increased efficiency applying to modern devices and in more general terms science and technology, it is necessary to develop new materials. Combining various types of materials (such as metals and ceramics) and developing composite materials seem to be suitable solutions. One of the most interesting materials includes Cu-Al2O3 composite and gradient materials (FGMs). Due to their potential properties, copper-alumina composites could be used in aerospace industry as rocket thrusters and components in aircraft engines. The main challenge posed by copper matrix composites reinforced by aluminum oxide particles is obtaining the uniform structure with no residual porosity (existing within the area of the ceramic phase). In the present paper, Cu-Al2O3 composites (also in a gradient form) with 1, 3, and 5 vol.% of aluminum oxide were fabricated by the hot pressing and spark plasma sintering methods. Two forms of aluminum oxide (αAl2O3 powder and electrocorundum) were used as a reinforcement. Microstructural investigations revealed that near fully dense materials with low porosity and a clear interface between the metal matrix and ceramics were obtained in the case of the SPS method. In this paper, the properties (mechanical, thermal, and tribological) of composite materials were also collected and compared. Technological tests were preceded by finite element method analyses of thermal stresses generated in the gradient structure, and additionally, the role of porosity in the formation process of composite properties was modeled. Based on the said modeling, technological conditions for obtaining FGMs were proposed.

  11. A comparison of the doppler-broadened positron annihilation spectra of neutron irradiated Al 2O 3 and MgAl 2O 3

    NASA Astrophysics Data System (ADS)

    Jones, P. L.; Schaffer, J. P.; Cocks, F. H.; Clinard, F. W.; Hurley, G. F.

    1985-01-01

    Radiation damage studies of oxides and ceramics have become of increasing importance due to the projected use of these materials in thermonuclear fusion reactors as electronic insulators and first wall materials. In addition these materials are important in RAD waste disposal. As part of a study of the defect structure in radiation damaged ceramics Doppler-broadened positron annihilation spectra have been obtained for a series of single crystal sapphire (α-Al 2O 3) and polycrystal (1:1) and (1:2) magnesium aluminate spinel (MgO·Al 2O 3 and MgO-2Al 2O 3) samples. These samples were irradiated in EBR-II to a fluence of 3 × 10 25 n/m 2 (E > 0.1 MeV) at 740°C, and 2 × 10 26 n/m 2 (E > 0.1 MeV) at ~ 550°C respectively. Positron annihilation spectra lineshapes for the irradiated, annealed, and as-received samples of both materials were compared using S parameter analysis. These calculations were made on deconvoluted gamma ray spectra that were free of any instrumental broadening effects. In this way, absolute S parameter changes could be calculated. The observed changes in the S parameter are consistent with independent volume swelling measurements for both the α-A1 2O 3 and the (1:2) MgAl 2O 4 samples. However, the change in S parameter measured for the (1:1) spinel is contrary to the measured volume change. This apparent anomaly indicates a predominence of interstitial as opposed to vacancy type defects in this material.

  12. Observation of nanoscale adhesion, friction and wear between ALD Al2O3 coated silicon MEMS sidewalls.

    PubMed

    Buja, Federico; Fiorentino, Giuseppe; Kokorian, Jaap; Spengen, W Merlijn van

    2015-01-26

    We report a novel investigation of the tribological properties of aluminum oxide (Al2O3) when it is used as protective coating on the sidewalls of microelectromechanical systems (MEMS). By using an in-house built optical displacement measurement system, we were able to measure the on-chip displacements with an unprecedented resolution of 2 nm. This corresponds to 2 nN and 9 nN force resolution, respectively, depending on whether an adhesion or a friction sensor MEMS device was used for the measurement. Al2O3 was deposited on the vertical etched sidewalls using atomic layer deposition (ALD). All tests were carried out in ambient conditions. The same tests carried out on uncoated polysilicon devices were not reproducible due to stiction, which sometimes prevented the interacting surfaces from moving once contact was made. The higher adhesion of silicon was also found to hinder the mobility of the slider. In the ALD-coated devices, we observed increasing adhesion after 50000 repeated contacts. We attribute this increase to the accumulation of aluminum hydroxide debris produced by the reaction with moisture in the environment. We also investigated the long-term effect of friction on the coated silicon sidewalls. The dissipated energy decreases, with a minimum lateral force occurring around the 1000th cycle. After 1000 cycles, the lateral displacement decreases, suggesting an additional lateral dragging force caused by the interaction between a mixture of aluminum hydroxides and water. However, the small overall amount of debris produced during the friction test indicates the outstanding characteristic of Al2O3 as a protective coating for MEMS that use contacting or sliding interfaces.

  13. Observation of nanoscale adhesion, friction and wear between ALD Al2O3 coated silicon MEMS sidewalls

    NASA Astrophysics Data System (ADS)

    Buja, Federico; Fiorentino, Giuseppe; Kokorian, Jaap; Merlijn van Spengen, W.

    2015-06-01

    We report a novel investigation of the tribological properties of aluminum oxide (Al2O3) when it is used as protective coating on the sidewalls of microelectromechanical systems (MEMS). By using an in-house built optical displacement measurement system, we were able to measure the on-chip displacements with an unprecedented resolution of 2 nm. This corresponds to 2 nN and 9 nN force resolution, respectively, depending on whether an adhesion or a friction sensor MEMS device was used for the measurement. Al2O3 was deposited on the vertical etched sidewalls using atomic layer deposition (ALD). All tests were carried out in ambient conditions. The same tests carried out on uncoated polysilicon devices were not reproducible due to stiction, which sometimes prevented the interacting surfaces from moving once contact was made. The higher adhesion of silicon was also found to hinder the mobility of the slider. In the ALD-coated devices, we observed increasing adhesion after 50000 repeated contacts. We attribute this increase to the accumulation of aluminum hydroxide debris produced by the reaction with moisture in the environment. We also investigated the long-term effect of friction on the coated silicon sidewalls. The dissipated energy decreases, with a minimum lateral force occurring around the 1000th cycle. After 1000 cycles, the lateral displacement decreases, suggesting an additional lateral dragging force caused by the interaction between a mixture of aluminum hydroxides and water. However, the small overall amount of debris produced during the friction test indicates the outstanding characteristic of Al2O3 as a protective coating for MEMS that use contacting or sliding interfaces.

  14. N-doped carbon@Ni-Al2O3 nanosheet array@graphene oxide composite as an electrocatalyst for hydrogen evolution reaction in alkaline medium

    NASA Astrophysics Data System (ADS)

    Wang, Juan; Qiu, Tian; Chen, Xu; Lu, Yanluo; Yang, Wensheng

    2015-10-01

    An NiAl-layered double-hydroxide (NiAl-LDH) nanosheet array is grown on a graphene oxide (GO) substrate (NiAl-LDH@GO) by the hydrothermal method. The NiAl-LDH@GO is used as the precursor to synthetize an N-doped carbon@Ni-Al2O3 nanosheet array@GO composite (N-C@Ni-Al2O3@GO) by coating with dopamine followed by calcination. The N-C@Ni-Al2O3@GO is used as a non-noble metal electrocatalyst for hydrogen evolution reaction in alkaline medium, and exhibits high electrocatalytic activity with low onset overpotential (-75 mV). The improved electrocatalytic performance of N-C@Ni-Al2O3@GO arises from its intrinsic features. First, it has a high specific surface area with the Ni nanoparticles in the composite dispersed well and the sizes of Ni nanoparticles are small, which lead to the exposure of more active sites for electrocatalysis. Second, there is a synergistic effect between the Ni nanoparticles and the N-C coating layer, which is beneficial to reduce the activation energy of the Volmer step and improve the electrocatalytic activity. Third, the N-C coating layer and the XC-72 additive can form an electrically conductive network, which serves as a bridge for the transfer of electrons from the electrode to the Ni nanoparticles.

  15. Realization of Al2O3/MgO laminated structure at low temperature for thin film encapsulation in organic light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Li, Min; Xu, Miao; Zou, Jianhua; Tao, Hong; Wang, Lei; Zhou, Zhongwei; Peng, Junbiao

    2016-12-01

    A laminated structure of Al2O3 and MgO deposited by atomic layer deposition (ALD) is used to realize a thin film encapsulation technology in organic light-emitting diodes (OLEDs). This film was targeted to achieve an excellent barrier performance. As the thickness of MgO layer increased from 0 nm to 20 nm, its physical properties transformed from the amorphous state into a crystalline state. The optimized cyclic ratio of ALD Al2O3 and MgO exhibited much lower water vapor transmission rate (WVTR) of 4.6 × 10-6 gm-2/day evaluated by Calcium (Ca) corrosion at 60 °C&100% RH, owing to the formation of a terrific laminated structure. Top-emitting OLEDs encapsulated with laminated Al2O3/MgO show longer operating lifetime under rigorous environmental conditions. These improvements were attributed to the embedded MgO film that served as a modified layer to establish a laminated structure to obstruct gas permeation, as well as a scavenger to absorb water molecules, thus alleviating the hydrolysis of bulk Al2O3 material.

  16. Realization of Al2O3/MgO laminated structure at low temperature for thin film encapsulation in organic light-emitting diodes.

    PubMed

    Li, Min; Xu, Miao; Zou, Jianhua; Tao, Hong; Wang, Lei; Zhou, Zhongwei; Peng, Junbiao

    2016-12-09

    A laminated structure of Al2O3 and MgO deposited by atomic layer deposition (ALD) is used to realize a thin film encapsulation technology in organic light-emitting diodes (OLEDs). This film was targeted to achieve an excellent barrier performance. As the thickness of MgO layer increased from 0 nm to 20 nm, its physical properties transformed from the amorphous state into a crystalline state. The optimized cyclic ratio of ALD Al2O3 and MgO exhibited much lower water vapor transmission rate (WVTR) of 4.6 × 10(-6) gm(-2)/day evaluated by Calcium (Ca) corrosion at 60 °C&100% RH, owing to the formation of a terrific laminated structure. Top-emitting OLEDs encapsulated with laminated Al2O3/MgO show longer operating lifetime under rigorous environmental conditions. These improvements were attributed to the embedded MgO film that served as a modified layer to establish a laminated structure to obstruct gas permeation, as well as a scavenger to absorb water molecules, thus alleviating the hydrolysis of bulk Al2O3 material.

  17. Crystallization kinetics of BaO-Al2O3-SiO2 glasses

    NASA Technical Reports Server (NTRS)

    Bansal, Narottam P.; Hyatt, Mark J.

    1988-01-01

    Barium aluminosilicate glasses are being investigated as matrix materials in high-temperature ceramic composites for structural applications. Kinetics of crystallization of two refractory glass compositions in the barium aluminosilicate system were studied by differential thermal analysis (DTA), X-ray diffraction (XRD), and scanning electron microscopy (SEM). From variable heating rate DTA, the crystallization activation energies for glass compositions (wt percent) 10BaO-38Al2O3-51SiO2-1MoO3 (glass A) and 39BaO-25Al2O3-35SiO2-1MoO3 (glass B) were determined to be 553 and 558 kJ/mol, respectively. On thermal treatment, the crystalline phases in glasses A and B were identified as mullite (3Al2O3-2SiO2) and hexacelsian (BaO-Al2O3-2SiO2), respectively. Hexacelsian is a high-temperature polymorph which is metastable below 1590 C. It undergoes structural transformation into the orthorhombic form at approximately 300 C accompanied by a large volume change which is undesirable for structural applications. A process needs to be developed where stable monoclinic celsian, rather than hexacelsian, precipitates out as the crystal phase in glass B.

  18. Synthesis of MgO nanoparticle loaded mesoporous Al2O3 and its defluoridation study

    NASA Astrophysics Data System (ADS)

    Dayananda, Desagani; Sarva, Venkateswara R.; Prasad, Sivankutty V.; Arunachalam, Jayaraman; Parameswaran, Padmanabhan; Ghosh, Narendra N.

    2015-02-01

    MgO nanoparticle loaded mesoporous alumina has been synthesized using a simple aqueous solution based cost effective method for removal of fluoride from water. Wide angle powder X-ray diffraction, nitrogen adsorption desorption analysis, transmission electron microscopy techniques and energy dispersive X-ray spectroscopy were used to characterize the synthesized adsorbents. Synthesized adsorbents possess high surface area with mesoporous structure. The adsorbents have been thoroughly investigated for the adsorption of F- using batch adsorption method. MgO nanoparticle loading on mesoporous Al2O3 enhances the F- adsorption capacity of Al2O3 from 56% to 90% (initial F- concentration = 10 mg L-1). Kinetic study revealed that adsorption kinetics follows the pseudo-second order model, suggesting the chemisorption mechanism. The F- adsorption isotherm data was explained by both Langmuir and Freundlich model. The maximum adsorption capacity of 40MgO@Al2O3 was 37.35 mg g-1. It was also observed that, when the solutions having F- concentration of 5 mg L-1 and 10 mg L-1 was treated with 40MgO@Al2O3, the F- concentration in treated water became <1 mg L-1, which is well below the recommendation of WHO.

  19. Crack-resistant Al2O3–SiO2 glasses

    NASA Astrophysics Data System (ADS)

    Rosales-Sosa, Gustavo A.; Masuno, Atsunobu; Higo, Yuji; Inoue, Hiroyuki

    2016-04-01

    Obtaining “hard” and “crack-resistant” glasses have always been of great important in glass science and glass technology. However, in most commercial glasses both properties are not compatible. In this work, colorless and transparent xAl2O3–(100–x)SiO2 glasses (30 ≤ x ≤ 60) were fabricated by the aerodynamic levitation technique. The elastic moduli and Vickers hardness monotonically increased with an increase in the atomic packing density as the Al2O3 content increased. Although a higher atomic packing density generally enhances crack formation in conventional oxide glasses, the indentation cracking resistance increased by approximately seven times with an increase in atomic packing density in binary Al2O3–SiO2 glasses. In particular, the composition of 60Al2O3•40SiO2 glass, which is identical to that of mullite, has extraordinary high cracking resistance with high elastic moduli and Vickers hardness. The results indicate that there exist aluminosilicate compositions that can produce hard and damage-tolerant glasses.

  20. Reduction of nitrotoluenes in supercritical isopropanol over Al2O3 in a flow reactor

    NASA Astrophysics Data System (ADS)

    Sivcev, V. P.; Korchagina, D. V.; Volcho, K. P.; Salakhutdinov, N. F.; Anikeev, V. I.

    2015-02-01

    The reduction of o-, m-, and p-nitrotoluenes in supercritical isopropanol over Al2O3 in a flow reactor is studied. It is shown that corresponding toluidines are major reaction products. Aromatic ring alkoxylation and N-alkylation products make a considerable contribution to the composition of reaction mixtures.

  1. Complete oxidation of volatile organic compounds over Ce/Cu/gamma-AL2O3 catalyst.

    PubMed

    Kim, S C; Shim, W G

    2008-05-01

    The effect of cerium (Ce) addition into Cu (5, 10 or 15 wt%)/gamma-Al2O3 catalysts on the catalyst properties and catalytic activity was investigated for the complete oxidation of volatile organic compounds (VOCs). X-ray diffraction (XRD), the Brunauer Emmett Teller method (BET), temperature programmed reduction (TPR) by H2, and N2O pulse titration were used to characterize a series of supported copper catalysts modified with cerium. Cerium was observed to be an inhibitor for 5 wt% and promoter for 10 or 15 wt% Cu/gamma-Al2O3 catalyst. The results of TPR, average crystallite size and dispersion indicated that even though Ce loadings on 10 and 15 wt% Cu/gamma-Al2O3 caused a reduction in BET surface area of the catalysts, the loaded amounts of Ce enhanced the catalytic activity through the formation of highly dispersed copper clusters. Kinetic parameters were developed for individual benzene, toluene and o-xylene (BTX) for 5 wt% Ce/10 wt% Cu/gamma-Al2O3 catalyst at temperatures ranging from 210 to 240 degrees C. The Mars and Van Krevelen model was found to be an adequate description of the catalytic oxidation of BTX for this study. The activity sequence with respect to the BTX molecules was found to be benzene > toluene > o-xylene under the surface-reaction-controlled region.

  2. Al2O3 half-wave films for long-life CW lasers

    NASA Technical Reports Server (NTRS)

    Ladany, I.; Ettenberg, M.; Lockwood, H. F.; Kressel, H.

    1977-01-01

    Long-term operating-life data are reported for (AlGa)As CW laser diodes. The use of half-wave Al2O3 facet coatings is shown to eliminate facet erosion, allowing stable diode operation at constant current for periods in excess of 10,000 h.

  3. Crack-resistant Al2O3–SiO2 glasses

    PubMed Central

    Rosales-Sosa, Gustavo A.; Masuno, Atsunobu; Higo, Yuji; Inoue, Hiroyuki

    2016-01-01

    Obtaining “hard” and “crack-resistant” glasses have always been of great important in glass science and glass technology. However, in most commercial glasses both properties are not compatible. In this work, colorless and transparent xAl2O3–(100–x)SiO2 glasses (30 ≤ x ≤ 60) were fabricated by the aerodynamic levitation technique. The elastic moduli and Vickers hardness monotonically increased with an increase in the atomic packing density as the Al2O3 content increased. Although a higher atomic packing density generally enhances crack formation in conventional oxide glasses, the indentation cracking resistance increased by approximately seven times with an increase in atomic packing density in binary Al2O3–SiO2 glasses. In particular, the composition of 60Al2O3•40SiO2 glass, which is identical to that of mullite, has extraordinary high cracking resistance with high elastic moduli and Vickers hardness. The results indicate that there exist aluminosilicate compositions that can produce hard and damage-tolerant glasses. PMID:27053006

  4. Electrochemical Impedance Studies on Tribocorrosion Behavior of Plasma-Sprayed Al2O3 Coatings

    NASA Astrophysics Data System (ADS)

    Liu, Zhe; Chu, Zhenhua; Chen, Xueguang; Dong, Yanchun; Yang, Yong; Li, Yingzhen; Yan, Dianran

    2015-06-01

    In this paper, the tribocorrosion of plasma-sprayed Al2O3 coatings in simulated seawater was investigated by electrochemical impedance spectroscopy (EIS) technique, complemented by scanning electron microscopy to observe the morphology of the tribocorrosion attack. Base on EIS of plasma-sprayed Al2O3 coatings undergoing long-time immersion in simulated seawater, the corrosion process of Al2O3 coatings can be divided into the earlier stage of immersion (up to 20 h) and the later stage (beyond 20 h). Then, the wear tests were carried out on the surface of Al2O3 coating undergoing different times of immersion to investigate the influence of wear on corrosion at different stages. The coexistence of wear and corrosion condition had been created by a boron nitride grinding head rotating on the surface of coatings corroded in simulated seawater. The measured EIS and the values of the fitting circuit elements showed that wear accelerated corrosion at the later stage, meanwhile, corrosion accelerated wear with the immersion time increasing.

  5. Hydrothermal extraction and gasification of low rank coal with catalyst Al2O3 and Pd/Al2O3

    NASA Astrophysics Data System (ADS)

    Fachruzzaki, Handayani, Ismi; Mursito, Anggoro Tri

    2017-01-01

    Increasing coal quality is very important in order to utilize low-rank coal. This research is attempted to increase the quality of low-rank coal using hydrothermal process with hot compressed water (HCW) at 200 °C and 3 MPa. The product from this process were solid residue and liquid filtrate with organic component. Product from gasification of the filtrate was synthetic gas. The result showed that higher water flow rate could increase organic component in the filtrate. When a catalyst was used, the extraction process was faster, the organic component in the filtrate was increased while its content was decreased in the residue. Fourier transform infrared spectroscopy (FTIR) analysis indicated that coal extraction using HCW was more effective with catalyst Pd/Al2O3. Increasing the process temperature will increase the amounts CO and H2 gas. In this research, highest net heating value at 800°C using K2CO3 solution and Pd/Al2O3 catalyst was 17,774.36 kJ/kg. The highest cold gas efficiency was 91.29% and the best carbon conversion was 34.78%.

  6. Fabrication of Al2O3/TiO2 multilayer mirrors for water-window attosecond pulses

    NASA Astrophysics Data System (ADS)

    Tanaka, Yuji; Murata, Masaki; Kumagai, Hiroshi; Kobayashi, Ataru; Shinagawa, Tsutomu

    2010-02-01

    Novel metal-oxide multilayer mirrors for water-window wavelengths have been already studied and then fabricated by atomic layer deposition (ALD) or atomic layer epitaxy (ALE) methods which have the self-limiting nature of the surface reactions and can control thickness on an atomic scale over large areas. The reason why metal-oxide multilayer mirrors are effective in the water-window wavelength is that they can prevent the formation of various alloys at the interface resulting in scattering loss, and the absorption of oxygen in oxides is negligible at the wavelength. In this study, high and low refractive materials were chosen to be TiO2 and Al2O3 respectively, because they can be fabricated by ALD or ALE methods and Ti L-absorption edge is located at 2.73nm. We investigated the atomic-scale growth of these films and then found that the growth rates could be constant. Moreover, Al2O3/TiO2 multilayer mirrors were fabricated by the ALE method. As a result, the soft x-ray reflectivity of the 10-bilayer mirror was 1.54%, approximately.

  7. Toughness enhancement in graphene nanoplatelet/SiC reinforced Al2O3 ceramic hybrid nanocomposites

    NASA Astrophysics Data System (ADS)

    Ahmad, Iftikhar; Islam, Mohammad; Subhani, Tayyab; Zhu, Yanqiu

    2016-10-01

    This paper elucidates the effect of silicon carbide nanoparticles (SiCNP) and graphene nanoplatelets (GNPs), on their own and together, on the densification behavior and fracture toughness of alumina (Al2O3) ceramic matrix. This was investigated by using the high-frequency induction heat sintering (HFIHS) process. While the addition of each nanostructure caused varying degrees of grain refinement and enhancement of mechanical properties, the incorporation of as little as 0.5 wt.% GNPs along with 5.0 wt.% SiCNP promoted uniform dispersion of the latter due to the lateral surface area of the graphene nanosheets with their two-dimensional morphology. There was an associated reduction in grain size from 1500 to 300 nm upon the addition of both types of nanoscale reinforcements. Extensive electron microscopy of the as-produced nanocomposites indicated the presence of SiCNP within, as well as at, the grain boundary areas whereas the 2D GNPs anchored between neighboring grains. Fractography of the samples revealed a transition from a mixed intergranular/transgranular mode for SiCNP or GNP-reinforced nanocomposites to transgranular fracture mode for the hybrid nanocomposites with improvements in fracture toughness and microhardness by 160 and 27%, respectively, largely due to the synergic role of the nanostructured reinforcements and their distinctly different toughening mechanisms. A new toughening model is proposed for the hybrid nanocomposites by taking into consideration crack deflection and pull-out effects due to SiCNP and the atomic level slip-stick driven GNPs inter-layer slithering. It was found that the addition of GNPs facilitates SiCNP dispersion that subsequently develops dense, fine-grained microstructures after a short-cycle, pressure-assisted consolidation process.

  8. Copper pillar and memory characteristics using Al2O3 switching material for 3D architecture

    PubMed Central

    2014-01-01

    A novel idea by using copper (Cu) pillar is proposed in this study, which can replace the through-silicon-vias (TSV) technique in future three-dimensional (3D) architecture. The Cu pillar formation under external bias in an Al/Cu/Al2O3/TiN structure is simple and low cost. The Cu pillar is formed in the Al2O3 film under a small operation voltage of <5 V and a high-current-carrying conductor of >70 mA is obtained. More than 100 devices have shown tight distribution of the Cu pillars in Al2O3 film for high current compliance (CC) of 70 mA. Robust read pulse endurances of >106 cycles are observed with read voltages of −1, 1, and 4 V. However, read endurance is failed with read voltages of −1.5, −2, and −4 V. By decreasing negative read voltage, the read endurance is getting worst, which is owing to ruptured Cu pillar. Surface roughness and TiO x N y on TiN bottom electrode are observed by atomic force microscope and transmission electron microscope, respectively. The Al/Cu/Al2O3/TiN memory device shows good bipolar resistive switching behavior at a CC of 500 μA under small operating voltage of ±1 V and good data retention characteristics of >103 s with acceptable resistance ratio of >10 is also obtained. This suggests that high-current operation will help to form Cu pillar and lower-current operation will have bipolar resistive switching memory. Therefore, this new Cu/Al2O3/TiN structure will be benefited for 3D architecture in the future. PMID:25136279

  9. Structural optical correlated properties of SnO2/Al2O3 core@ shell heterostructure

    NASA Astrophysics Data System (ADS)

    Heiba, Zein K.; Imam, N. G.; Bakr Mohamed, Mohamed

    2016-07-01

    Nano size polycrystalline samples of the core@shell heterostructure of SnO2 @ xAl2O3 (x = 0, 25, 50, 75 wt.%) were synthesized by sol-gel technique. The resulting samples were characterized with fourier transform infrared spectroscopy (FT-IR), photoluminescence (PL) and X-ray powder diffraction (XRD). The XRD patterns manifest diffraction peaks of SnO2 as main phase with weak peaks corresponding to Al2O3 phase. The formation of core@ shell structure is confirmed by TEM images and Rietveld quantitative phase analysis which revealed that small part of Al2O3 is incorporated into the SnO2 lattice while the main part (shell) remains as a separate phase segregated on the grain boundary surface of SnO2 (core). It is found that the grain size of the mixed oxides SnO2 @ xAl2O3 is below 10 nm while for pure SnO2 it is over 41 nm, indicating that alumina can effectively prevent SnO2 from further growing up in the process of calcination. This is confirmed by the large increase in the specific surface area for mixed oxide samples. The PL emission showed great dependence on the structure properties analyzed by XRD and FTIR. The PL results recommend Al2O3@SnO2 core@shell heterostructure to be a promising short-wavelength luminescent optoelectronic devices for blue, UV, and laser light-emitting diodes.

  10. Mechanical Properties and Microstructural Evolution of Bimetal 1050/Al2O3/5083 Composites Fabricated by Warm Accumulative Roll Bonding

    NASA Astrophysics Data System (ADS)

    Sedighi, M.; Farhadipour, P.; Heydari Vini, M.

    2016-12-01

    In this study, a warm accumulative roll bonding process was used to produce a 1050 /5% Al2O3/5083 composite from AA1050 and AA5083 sheets. Firstly, the raw materials were roll-bonded and then rolled up to five accumulative rolling cycles by preheating for 5 min at 280°C before each cycle. The mechanical properties of the ARBed bimetals were evaluated in comparison with 1050/5% Al2O3 and 5083 /5% Al2O3 roll-bonded single-metal metal matrix composites (MMCs). It was found that two different layers of the bimetal sheet (1050/5% Al2O3/5083 composite) were deformed in a nearly identical way during the first three cycles. After that, the 5083 layers started necking. The strength of the bimetal samples was superior to the average of these two single-metal MMCs. Furthermore, the strength and ductility of the ARBed bimetal improved by ARB cycles. Finally, the fracture surfaces of the bimetal composite were studied at all ARB cycles by scanning electron microscopy.

  11. Performance and Long-Term Stability of Pd/PSS and Pd/Al2O3 Membranes for Hydrogen Separation

    PubMed Central

    Liguori, Simona; Iulianelli, Adolfo; Dalena, Francesco; Pinacci, Pietro; Drago, Francesca; Broglia, Maria; Huang, Yan; Basile, Angelo

    2014-01-01

    The present work is focused on the investigation of the performance and long-term stability of two composite palladium membranes under different operating conditions. One membrane (Pd/porous stainless steel (PSS)) is characterized by a ~10 µm-thick palladium layer on a porous stainless steel substrate, which is pretreated by means of surface modification and oxidation; the other membrane (Pd/Al2O3) is constituted by a ~7 µm-thick palladium layer on an asymmetric microporous Al2O3 substrate. The operating temperature and pressure ranges, used for studying the performance of these two kinds of membranes, are 350–450 °C and 200–800 kPa, respectively. The H2 permeances and the H2/N2 selectivities of both membranes were investigated and compared with literature data. At 400 °C and 200 kPa as pressure difference, Pd/PSS and Pd/Al2O3 membranes exhibited an H2/N2 ideal selectivity equal to 11700 and 6200, respectively, showing stability for 600 h. Thereafter, H2/N2 selectivity of both membranes progressively decreased and after around 2000 h, dropped dramatically to 55 and 310 for the Pd/PSS and Pd/Al2O3 membranes, respectively. As evidenced by Scanning Electron Microscope (SEM) analyses, the pinholes appear on the whole surface of the Pd/PSS membrane and this is probably due to release of sulphur from the graphite seal rings. PMID:24957126

  12. Al2O3/SUS304 Brazing via AgCuTi-W Composite as Active Filler

    NASA Astrophysics Data System (ADS)

    Su, Cherng-Yuh; Zhuang, Xie-Zongyang; Pan, Cheng-Tang

    2014-03-01

    Alumina ceramic (α-Al2O3) was brazed to stainless steel (SUS304) using an Ag-Cu-Ti + W composite filler and a traditional active brazing filler alloy (CuSil-ABA). Then, the effects of the presence of W particles and of the brazing parameters on the microstructures and mechanical properties of the brazed joints were investigated. The maximum tensile strength of the joints obtained using Ag-Cu-Ti + W composite filler was 13.2 MPa, which is similar to that obtained using CuSil-ABA filler (13.5 MPa). When the joint was brazed at 930 °C for 30 min, the tensile strengths decreased for both kinds of fillers, although the strength was slightly higher for the Ag-Cu-Ti + W composite filler than for the Ag-Cu-Ti filler. The interfacial microstructure results show that the Ti reacts with W to form a Ti-W-O compound in the brazing alloy. When there are more W particles in the brazing alloy, the thickness of the Ti X O Y reaction layer near the alumina ceramic decreases. Moreover, W particles added to the brazing alloy can reduce the coefficient of thermal expansion of the brazing alloy, which results in lower residual stress between the Al2O3 and SUS304 in the brazing joints and thus yields higher tensile strengths as compared to those obtained using the CuSil-ABA brazing alloy.

  13. Spectral density analysis of the optical properties of Ni-Al2O3 nano-composite films

    NASA Astrophysics Data System (ADS)

    Niklasson, Gunnar A.; Boström, Tobias K.; Tuncer, Enis

    2011-09-01

    Thin films consisting of transition metal nanoparticles in an insulating oxide exhibit a high solar absorptance together with a low thermal emittance and are used as coatings on solar collector panels. In order to optimise the nanocomposites for this application a more detailed understanding of their optical properties is needed. Here we use a highly efficient recently developed numerical method to extract the spectral density function of nickel-aluminum oxide (Ni-Al2O3) composites from experimental data on the dielectric permittivity in the visible and near-infrared wavelength ranges. Thin layers of Ni-Al2O3 were produced by a sol-gel technique. Reflectance and transmittance spectra were measured by spectrophotometry in the wavelength range 300 to 2500 nm for films with thicknesses in the range 50 to 100 nm. Transmission electron microscopy showed crystalline Ni particles with sizes in the 3 to 10 nm range. The spectral density function shows a multi-peak structure with three or four peaks clearly visible. The peak positions are influenced by particle shape, local volume fraction distributions and particle-particle interactions giving rise to structural resonances in the response of the composite to an electromagnetic field.

  14. Sputtering-deposition of Ru nanoparticles onto Al2O3 modified with imidazolium ionic liquids: synthesis, characterisation and catalysis.

    PubMed

    Foppa, Lucas; Luza, Leandro; Gual, Aitor; Weibel, Daniel E; Eberhardt, Dario; Teixeira, Sérgio R; Dupont, Jairton

    2015-02-14

    Well-distributed Ru nanoparticles (Ru-NPs) were produced over Al(2)O(3) supports modified with covalently anchored imidazolium ionic liquids (ILs) containing different anions and cation lateral alkyl chain lengths by simple sputtering from a Ru foil. These Ru-NPs were active catalysts for the hydrogenation of benzene. Furthermore, depending on the nature of the IL used to modify the support (hydrophilic or hydrophobic), different catalytic behaviours were observed. Turnover numbers (TON) as high as 27 000 with a turnover frequency (TOF) of 2.73 s(-1) were achieved with Ru-NPs of 6.4 nm supported in Al(2)O(3) modified with an IL containing the N(SO(2)CF(3))2(-) anion, whereas higher initial cyclohexene selectivities (ca. 20% at 1% benzene conversion) were attained for Ru-NPs of 6.6 nm in the case where Cl(-) and BF(4)(-) anions were used. Such observations strongly suggest that thin layers of ILs surround the NP surface, modifying the reactivity of these catalytic systems. These findings open a new window of opportunity in the development of size-controlled Ru-NPs with tuneable reactivity.

  15. Adsorption of Pd atoms on γ-Al 2O 3: a density functional study of metal-support interactions

    NASA Astrophysics Data System (ADS)

    Márquez, Antonio M.; Sanz, Javier Fernández

    2004-11-01

    The Pd/γ-Al2O3 interface at low coverage has been theoretically studied by means of periodic-supercell density functional calculations. The most stable (1 1 0) γ-Al2O3 clean surface plane has been modelled by using a six layers slab stoichiometric model of 40 atoms. A single Pd atom has been deposited on top of the surface in different positions, first freezing the surface structure and later allowing the surface to relax. The results indicate that the metal-support interaction is dominated by the strong Lewis acid properties of the tetrahedral cationic sites. It is also shown that in the octahedral cationic sites, adsorption of single Pd atoms induces a significant relaxation of the substrate. While the interaction energy with the preferred site is strong (∼3.8 eV), small differences are found for nearby sites, indicating a high mobility of Pd atoms on the surface, at least on the channels.

  16. Microwave plasma-assisted ALD of Al2O3 thin films: a study on the substrate temperature dependence of various parameters of interest

    NASA Astrophysics Data System (ADS)

    Thomas, Subin; Nalini, Savitha; Kumar, K. Rajeev

    2017-03-01

    This study utilizes microwave plasma-assisted atomic layer deposition (MPALD) in remote mode to deposit Al2O3 thin films with increased growth per cycle (GPC). Optical emission spectroscopy (OES) was used to identify the plasma configuration in the ALD chamber. MPALD-Al2O3 thin films were deposited at temperatures ranging from room temperature to 200 °C and the electrical parameters were investigated with Al/Al2O3/p-Si metal oxide semiconductor (MOS) structures. A GPC of 0.24 nm was observed for the films deposited at room temperature. The fixed oxide charge densities ( N fix) in all films were of the order of 1012 cm-2. The interface state density ( D it) exhibited a distinct minimum for the films deposited at 100 °C. The dependence of built-in voltage, N fix, and D it on Al2O3 deposition temperature was investigated. This can be used as a measure of the electrical applicability of these thin films.

  17. Stoichiometry of the ALD-Al2O3/4H-SiC interface by synchrotron-based XPS

    NASA Astrophysics Data System (ADS)

    Usman, Muhammad; Saveda Suvanam, Sethu; Ghadami Yazdi, Milad; Göthelid, Mats; Sultan, Muhammad; Hallén, Anders

    2016-06-01

    The interface of Al2O3 with 4H-SiC is investigated with synchrotron-based high-resolution x-ray photoelectron spectroscopy to clarify the effect of post-dielectric deposition annealing processes (rapid thermal annealing (RTA) and furnace annealing (FA)) involved in device fabrication. Our results show that post-deposition annealing of Al2O3/4H-SiC up to 1100 °C forms a thin interfacial layer of SiO2 between Al2O3 and SiC, which possibly improves the dielectric properties of the system by reducing oxide charges and near-interface traps. Moreover, the formation of SiO2 at the interface gives additional band offset to the dielectric system. We have also observed that the RTA and FA processes have similar results at a high temperature of 1100 °C. Therefore, we propose that high-temperature post-oxide (Al2O3) deposition annealing of up to 1100 °C may be used in device processing, which can improve overall dielectric properties and consequently the device performance.

  18. Magnetic field control and wavelength tunability of SPP excitations using Al2O3/SiO2/Fe structures

    NASA Astrophysics Data System (ADS)

    Kaihara, Terunori; Shimizu, Hiromasa; Cebollada, Alfonso; Armelles, Gaspar

    2016-09-01

    Here, we show the high wavelength tunability and magnetic field modulation of surface plasmon polaritons (SPPs) of a waveguide mode that Double-layer Dielectrics and Ferromagnetic Metal, Al2O3/SiO2/Fe, trilayer structures exhibit when excited in the Otto configuration of attenuated total reflection setup. First by modeling, and then experimentally, we demonstrate that it is possible to tune the wavelength at which the angular dependent reflectance of these structures reaches its absolute minimum by simply adjusting the SiO2 intermediate dielectric layer thickness. This precise wavelength corresponds to the cut-off condition of SPPs' waveguide mode supported by the proposed structure, and it can be then switched between two values upon magnetization reversal of the Fe layer. In this specific situation, a large enhancement of the transverse magneto-optical effect is also obtained.

  19. Electrical Discharge Machining of Al/7.5% Al2O3 MMCs Using Rotary Tool and Al2O3 Powder

    NASA Astrophysics Data System (ADS)

    Daneshmand, Saeed; Masoudi, Behnam; Monfared, Vahid

    Nowadays, composites are used in different parts of industries and it is one of the most important subjects. The most widely used reinforcements in metal matrix composites are Al2O3 and SiC fibers and particles which may be used in cutting-edge functional and structural applications of aerospace, defense, and automobile industries. Depending on the type of powder used, composite materials are difficult to machine by conventional cutting tools and methods. The most appropriate way for machining of these composites is electro discharge. For the reason of improving the surface quality, tool wear rate and material removal rate and reducing the cracks on the surface, Al2O3 powder was used. In this study, the effect of input parameters of EDM such as voltage, pulse current, pulse on-time and pulse off-time on output parameters like material removal rate, tool wear rate and surface roughness in both conditions of the rotary tool with powder mixed dielectric EDM and the stationary tool excluding powder mixed dielectric were investigated. The critical parameters were identified by variance analysis, while the optimum machining parameter settings were achieved via Taguchi method. Results show that using of powder mixed dielectric and rotary tool reduce the tool wear rate, surface roughness and the cracks on the surface significantly. It is found also that using of powder mixed dielectric and rotary tool improve the material removal rate due to improved flushing action and sparking efficiency. The analysis of variance showed that the pulse current and pulse on-time affected highly the MRR, TWR, surface roughness and surface cracks.

  20. Effect of Nano-Al2O3 on the Toxicity and Oxidative Stress of Copper towards Scenedesmus obliquus

    PubMed Central

    Li, Xiaomin; Zhou, Suyang; Fan, Wenhong

    2016-01-01

    Nano-Al2O3 has been widely used in various industries; unfortunately, it can be released into the aquatic environment. Although nano-Al2O3 is believed to be of low toxicity, it can interact with other pollutants in water, such as heavy metals. However, the interactions between nano-Al2O3 and heavy metals as well as the effect of nano-Al2O3 on the toxicity of the metals have been rarely investigated. The current study investigated copper toxicity in the presence of nano-Al2O3 towards Scenedesmus obliquus. Superoxide dismutase activity and concentration of glutathione and malondialdehyde in cells were determined in order to quantify oxidative stress in this study. Results showed that the presence of nano-Al2O3 reduced the toxicity of Cu towards S. obliquus. The existence of nano-Al2O3 decreased the growth inhibition of S. obliquus. The accumulation of copper and the level of oxidative stress in algae were reduced in the presence of nano-Al2O3. Furthermore, lower copper accumulation was the main factor that mitigated copper toxicity with the addition of nano-Al2O3. The decreased copper uptake could be attributed to the adsorption of copper onto nanoparticles and the subsequent decrease of available copper in water. PMID:27294942

  1. Effect of catalyst preparation conditions on the hydrodesulfurization of thiophene over Co-Mo/gamma-Al2O3.

    PubMed

    Chen, Chun-Liang; Lin, Shiow-Shyung; Liu, Tuan-Chi

    2002-01-01

    The purpose of this research was to study the effects of preparation conditions on the catalytic properties of the Co-Mo/gamma-Al2O3 catalyst. The work included catalyst preparations and reactions. In the preparations, cobalt-impregnated Mo/gamma-Al2O3 (designated as IcIM) was found to have a promoting effect on the hydrodesulfurization (HDS) of thiophene. Activity and stability of IcIM was higher than that of Mo/gamma-Al2O3. Conversely, when cobalt was added onto Mo/gamma-Al2O3 by the mechanical mixing method, no promoting effect was observed. Mo/gamma-Al2O3 was also prepared using the two different methods (incipient impregnation or mechanical mixing). The differently prepared Mo/gamma-Al203 resulted in no obvious difference in activity of IcIM. It was further found that Co-Mo/gamma-Al2O3 activity initially increased appreciably with Mo content and leveled off at Mo contents above 9 wt.%. The catalyst exhibited a maximum activity at Co/Mo ratio 0.3. The order in which metal species were added had a great influence on the activity of the Co-Mo/gamma-Al2O3 catalyst. Higher activity was obtained when Co was added into Mo/gamma-Al2O3 as opposed to Mo added into Co/gamma-Al2O3.

  2. Influence of Content of Al2O3 on Structure and Properties of Nanocomposite Nb-B-Al-O films.

    PubMed

    Liu, Na; Dong, Lei; Dong, Lei; Yu, Jiangang; Pan, Yupeng; Wan, Rongxin; Gu, Hanqing; Li, Dejun

    2015-12-01

    Nb-B-Al-O nanocomposite films with different power of Al2O3 were successfully deposited on the Si substrate via multi-target magnetron co-sputtering method. The influences of Al2O3's content on structure and properties of obtained nanocomposite films through controlling Al2O3's power were investigated. Increasing the power of Al2O3 can influence the bombarding energy and cause the momentum transfer of NbB2. This can lead to the decreasing content of Al2O3. Furthermore, the whole films showed monocrystalline NbB2's (100) phase, and Al2O3 shaded from amorphous to weak cubic-crystalline when decreasing content of Al2O3. This structure and content changes were proof by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). When NbB2 grains were far from each other in lower power of Al2O3, the whole films showed a typical nanocomposite microstructure with crystalline NbB2 grains embedded in a matrix of an amorphous Al2O3 phase. Continuing increasing the power of Al2O3, the less content of Al2O3 tended to cause crystalline of cubic-Al2O3 between the close distances of different crystalline NbB2 grains. The appearance of cubic-crystallization Al2O3 can help to raise the nanocomposite films' mechanical properties to some extent. The maximum hardness and elastic modulus were up to 21.60 and 332.78 GPa, which were higher than the NbB2 and amorphous Al2O3 monolithic films. Furthermore, this structure change made the chemistry bond of O atom change from the existence of O-Nb, O-B, and O-Al bonds to single O-Al bond and increased the specific value of Al and O. It also influenced the hardness in higher temperature, which made the hardness variation of different Al2O3 content reduced. These results revealed that it can enhance the films' oxidation resistance properties and keep the mechanical properties at high temperature. The study highlighted the importance of controlling the Al2O3's content to prepare

  3. Millimeter distance effects of surface plasmon polaritons in electroformed Al-Al2O3-Ag diodes

    NASA Astrophysics Data System (ADS)

    Hickmott, T. W.

    2017-02-01

    Electroforming of metal-insulator-metal diodes is a soft dielectric breakdown that changes the high resistance of as-prepared diodes to a low resistance state. Electroforming of Al-Al2O3-metal diodes with anodic Al2O3 results in voltage-controlled negative resistance in the current-voltage (I-V) characteristics, electroluminescence (EL), and electron emission into vacuum (EM). EL is due to electrons injected at the Al-Al2O3 interface combining with radiative defects in Al2O3. Surface plasmon polaritons (SPPs) are electromagnetic waves that can be excited by photons or electrons. SPPs are confined to a metal-dielectric interface, cause large electric fields in the metal and dielectric, and have ranges of micrometers. The temperature dependence of I-V curves, EL, and EM of a group of electroformed Al-Al2O3-Ag diodes with Al2O3 thicknesses between 12 nm and 20 nm, group A, was measured between 200 K and 300 K. After a sequence of temperature measurements, the Al-Al2O3-Ag diodes, the Al-Al2O3 regions between diodes, and portions of the Ag on the glass region that provides contacts to the diodes are darkened. The range of darkening is >7 mm in a diode with 12 nm of Al2O3 and 2.0-3.5 mm in diodes with Al2O3 thicknesses between 14 nm and 20 nm. Darkening is attributed to the occurrence of SPPs generated by EL photons at the Ag-Al2O3 and Al-Al2O3 interfaces. The results are compared to a second group of Al-Al2O3-Ag diodes with identical Al2O3 thicknesses, group B, that were prepared in the same way as the diodes of group A except for a difference in the deposition of Al films for the two groups. Al-Al2O3-Ag diodes of group B exhibit enhanced EL, which is attributed to spontaneous emission of recombination centers in Al2O3 being enhanced by large electromagnetic fields that are due to SPPs that are generated by EL photons.

  4. Diffusion processes in Al2O3 scales - Void growth, grain growth, and scale growth

    NASA Technical Reports Server (NTRS)

    Smialek, J. L.; Gibala, R.

    1983-01-01

    The internal microstructure and growth kinetics of Al2O3 scales on Ni-15Cr-13Al (wt percent) are investigated by TEM and analyzed in relation to models of diffusivity. Polished arc-melted specimens were oxidized in 1-atm air at 1100 C for 0.1, 1.0, and 20 hours and ion-thinned for TEM at 100 kV. The frequency distribution of void size and grain size is determined for different oxidation times and scale depths. The kinetics of microvoid growth and of grain and scale growth are plotted and related via simplified models to lattice and grain-boundary oxygen diffusivity, respectively. Good agreement is found between model predictions and data obtained by Oishi and Kingery (1960) on oxygen diffusion in bulk Al2O3. The further implications and limitations of these findings are discssed.

  5. Adherent Al2O3 scales produced on undoped NiCrAl alloys

    NASA Technical Reports Server (NTRS)

    Smialek, James L.

    1986-01-01

    Repeated oxidation and polishing of high purity Ni-15Cr-13Al has dramatically changed its cyclic oxidation behavior from nonadherent to adherent. No apparent change in scale phase, morphology or interface structure occurred during this transition, dismissing any mechanism based on pegging, vacancy sink, or growth stress. The principle change that did occur was a reduction in the sulfur content from 10 ppmw to 3 ppmw after 25 cycles at 1120 C. These observations are used to support the model of Al2O3 scale adherence put forth by Smeggil et al. which claims that Al2O3 scale spallation occurs due to sulfur segregation and bond deterioration at the oxide-metal interface.

  6. Anormalous Optical Absorption in Porous Al_2O3 Host Matrix---Nano-Oxide Particle Nanocomposites

    NASA Astrophysics Data System (ADS)

    Zhang, Lide; Zhang, Biao; Mo, Chimei

    1996-03-01

    Porous Al_2O3 host matrix---nano-γ-Fe_2O3 particle composites (porous nanocomposite) were prepared by pyrolysis of Fe(NO_3)_39H_2O in porous nano- Al_2O3 matrix at 250^0C. Comparing with simple nanocomposites formed by mixing nano-γ-Fe_2O3 and compacting at room temperature, followed by annealing at 250^0C, the following anomalous optical behaviors were observed: for porous nanocomposite containing 5% Fe_2O_3, the aborption edge shifts obviously from 827nm to 543nm, and with increasing dopping amount of Fe_2O3 from 5% to 70%, blue shift phenomina decreases. Namely, the absorption edge moves from 543nm to 710nm. The mechanism of shift of the absorption edge is discussed.

  7. Fabrication of SiC/Al2O3 CMCs & their physical properties

    NASA Astrophysics Data System (ADS)

    Kumar, S. Santhosh; Devaiah, M.; Rajasekharan, T.

    2012-06-01

    SiC particulate reinforced Al2O3 matrix composites were fabricated using Directed Metal Oxidation (DIMOX) process. Continuous oxidation of an Al-8.5Si-1.5Mg-9Zn alloy in presence SiC perform with suitable dopants has led to the formation of the Al2O3 matrix. Ceramic composites with SiC volume fraction in the range of 0.35 - 0.43 were evaluated for effective co-efficient of linear thermal expansion (CTE) and elastic properties. The composites with high volume fraction of SiC showed a minimum dilatation with temperature (5.0 × 10-6 /K) and also enhancement in elastic properties (E: 262 GPa; G: 87 GPa; K: 189 GPa). Also, the elastic properties of the ceramic composites increased with SiC volume fraction.

  8. Geant4 calculations for space radiation shielding material Al2O3

    NASA Astrophysics Data System (ADS)

    Capali, Veli; Acar Yesil, Tolga; Kaya, Gokhan; Kaplan, Abdullah; Yavuz, Mustafa; Tilki, Tahir

    2015-07-01

    Aluminium Oxide, Al2O3 is the most widely used material in the engineering applications. It is significant aluminium metal, because of its hardness and as a refractory material owing to its high melting point. This material has several engineering applications in diverse fields such as, ballistic armour systems, wear components, electrical and electronic substrates, automotive parts, components for electric industry and aero-engine. As well, it is used as a dosimeter for radiation protection and therapy applications for its optically stimulated luminescence properties. In this study, stopping powers and penetrating distances have been calculated for the alpha, proton, electron and gamma particles in space radiation shielding material Al2O3 for incident energies 1 keV - 1 GeV using GEANT4 calculation code.

  9. High brightness, narrow-band, Ti:Al2O3 oscillator

    NASA Astrophysics Data System (ADS)

    Brown, A. J. W.; Kangas, K. W.; Fisher, C. H.

    The injection-seeding of a short (about 30 cm) Ti:Al2O3 power oscillator with the output from a short-pulse, narrow-band, tunable, Ti:Al2O3 oscillator is reported. The frequency-doubled output from a Continuum YG681C Nd:YAG laser was used as the common pump source for both the seed laser and power oscillator. Good injection-seeding was observed with more than 20 ns delay; less delay than this resulted in poorer seeding. Minimizing the seed laser turn on time allowed harder pumping of the power oscillator, hence higher output energy, while maining good seeding. The spectral output from the power oscillator was analyzed using both an etalon and a 1-m MacPherson spectrometer. The seeded power oscillator is shown to closely replicate the seed laser output, operating on 2 or 3 longitudinal modes.

  10. Visible luminescence of Al2O3 nanoparticles embedded in silica glass host matrix

    NASA Astrophysics Data System (ADS)

    El Mir, L.; Amlouk, A.; Barthou, C.

    2006-11-01

    This paper deals with the sol gel elaboration and defects photoluminescence (PL) examination of Al2O3 nanocrystallites (size ˜30 nm) confined in glass based on silica aerogel. Aluminium oxide aerogels were synthesized using esterification reaction for hydrolysis of the precursor and supercritical conditions of ethyl alcohol for drying. The obtained nanopowder was incorporated in SiO2 host matrix. After heating under natural atmosphere at 1150 °C for 2 h, the composite Al2O3/SiO2 (AS) exhibited a strong PL bands at 400 600 and 700 900 nm in 78 300 K temperature range. PL excitation (PLE) measurements show different origins of the emission. It was suggested that OH-related radiative centres and non-bridging oxygen hole centres (NBOHCs) were responsible for the bands at 400 600 and 700 900 nm, respectively.

  11. Modification of Fluorinated Al2O3 Surface by Irradiating H2 and O2 Plasmas

    NASA Astrophysics Data System (ADS)

    Miwa, Kazuhiro; Usami, Kenji; Takada, Noriharu; Sasaki, Koichi

    2009-12-01

    We irradiated H2 and O2 plasmas onto fluorinated Al2O3, which was prepared by exposing a virgin Al2O3 sample to an SF6/O2 plasma. The effects of the H2 plasma irradiation were the reduction of the AlOxFy (x + y = 1.5) and AlFx (x < 3) bonding components and the realization of smooth sample surface. It was observed that the irradiation of the H2 plasma induced Al-OH bonding. The Al-OH bonding was removed by the sequential irradiation of the O2 plasma after the H2 plasma irradiation. The O2 plasma irradiation also resulted in peroxidation and an increase in surface roughness.

  12. Luminescence study of nanosized Al2O3:Tb3+ obtained by gas-dispersed synthesis

    NASA Astrophysics Data System (ADS)

    Berezovskaya, I. V.; Poletaev, N. I.; Khlebnikova, M. E.; Zatovsky, I. V.; Bychkov, K. L.; Efryushina, N. P.; Khomenko, O. V.; Dotsenko, V. P.

    2016-09-01

    Terbium-doped Al2O3 samples were obtained by gas-dispersed synthesis. It was shown that the resulting powders, with particle sizes of 10-70 nm, consist of a mixture of transition aluminas, among which the δ *-polymorph is dominant. The luminescence properties of Al2O3:Tb3+ have been studied upon excitation in the UV-visible range of the spectrum. It was found that Tb3+ ions cause several groups of inhomogeneously broadened emission bands in the range of 470-640 nm, which are characteristic for disordered materials. In addition, the emission spectra contain a broad band at about 450 nm and several narrower ones in the 680-720 nm region. These features are attributed to surface defects and impurity Cr3+ ions occupying Al3+ octahedral positions, respectively.

  13. Pressure sintering of Si3N4-Al2O3 /Sialon/

    NASA Technical Reports Server (NTRS)

    Yeh, H. C.; Sanders, W. A.; Fiyalko Luttner, J. L.

    1977-01-01

    Essentially pore-free Sialon bodies were obtained by pressure sintering for three blends (mol ratios of 4:1, 2:3, and 3:2) of Si3N4 and Al2O3 powders under the conditions of 27.6 MN/sq m and a temperature of 1700 C for 2 h. These dense bodies consist mainly of a Sialon solid solution with a minor amount of a particular second phase. The higher the Al2O3 content (20 to 60 mol% range) in Sialon, the higher the densification rate. Fully dense bodies can be obtained at temperatures as low as 1500 C at 27.6 MN/sq m for 2 h with no second phase detectable by X-ray diffraction. A 100% dense body can be obtained by heating at 1700 C at 27.6 MN/sq m without a holding time.

  14. Electron paramagnetic resonance of Er3+ ions in a polycrystalline α-Al2O3

    NASA Astrophysics Data System (ADS)

    Asatryan, H. R.; Zakharchenya, R. I.; Kutsenko, A. B.; Babunts, R. A.; Baranov, P. G.

    2007-06-01

    The EPR spectra of rare-earth Er3+ ions in a polycrystalline corundum α-Al2O3 synthesized by the sol-gel technology were revealed. It is shown that the EPR spectra belong to the Er3+ ions in the ground state corresponding to the lower Stark sublevel of the 4 I 15/2 term and can be described by the spin Hamiltonian of axial symmetry with an effective spin S = 1/2 and the g tensor with components g ‖ = 12.176 and g ⊥ = 4.14. The average value of the g tensor ( = 6.82) corresponds to the Γ7 state in a cubic field. Erbium is assumed to substitute for aluminum in the Al2O3 corundum crystal. The local symmetry C 3 of the Al3+ ion remains despite the pronounced expansion of the lattice around the Er3+ ion.

  15. Atomic Layer Deposition of Chemical Passivation Layers and High Performance Anti-Reflection Coatings on Back-Illuminated Detectors

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E. (Inventor); Greer, Frank (Inventor); Nikzad, Shouleh (Inventor)

    2014-01-01

    A back-illuminated silicon photodetector has a layer of Al2O3 deposited on a silicon oxide surface that receives electromagnetic radiation to be detected. The Al2O3 layer has an antireflection coating deposited thereon. The Al2O3 layer provides a chemically resistant separation layer between the silicon oxide surface and the antireflection coating. The Al2O3 layer is thin enough that it is optically innocuous. Under deep ultraviolet radiation, the silicon oxide layer and the antireflection coating do not interact chemically. In one embodiment, the silicon photodetector has a delta-doped layer near (within a few nanometers of) the silicon oxide surface. The Al2O3 layer is expected to provide similar protection for doped layers fabricated using other methods, such as MBE, ion implantation and CVD deposition.

  16. Electrical characteristics of SrTiO3/Al2O3 laminated film capacitors

    NASA Astrophysics Data System (ADS)

    Peng, Yong; Yao, Manwen; Chen, Jianwen; Xu, Kaien; Yao, Xi

    2016-07-01

    The electrical characteristics of SrTiO3/Al2O3 (160 nm up/90 nm down) laminated film capacitors using the sol-gel process have been investigated. SrTiO3 is a promising and extensively studied high-K dielectric material, but its leakage current property is poor. SrTiO3/Al2O3 laminated films can effectively suppress the demerits of pure SrTiO3 films under low electric field, but the leakage current value reaches to 0.1 A/cm2 at higher electric field (>160 MV/m). In this study, a new approach was applied to reduce the leakage current and improve the dielectric strength of SrTiO3/Al2O3 laminated films. Compared to laminated films with Au top electrodes, dielectric strength of laminated films with Al top electrodes improves from 205 MV/m to 322 MV/m, simultaneously the leakage current maintains the same order of magnitude (10-4 A/cm2) until the breakdown occurs. The above electrical characteristics are attributed to the anodic oxidation reaction in origin, which can repair the defects of laminated films at higher electric field. The anodic oxidation reactions have been confirmed by the corresponding XPS measurement and the cross sectional HRTEM analysis. This work provides a new approach to fabricate dielectrics with high dielectric strength and low leakage current.

  17. Al2O3 Nanoparticle Addition to Commercial Magnesium Alloys: Multiple Beneficial Effects

    PubMed Central

    Paramsothy, Muralidharan; Chan, Jimmy; Kwok, Richard; Gupta, Manoj

    2012-01-01

    The multiple beneficial effects of Al2O3 nanoparticle addition to cast magnesium based systems (followed by extrusion) were investigated, constituting either: (a) enhanced strength; or (b) simultaneously enhanced strength and ductility of the corresponding magnesium alloys. AZ31 and ZK60A nanocomposites containing Al2O3 nanoparticle reinforcement were each fabricated using solidification processing followed by hot extrusion. Compared to monolithic AZ31 (tension levels), the corresponding nanocomposite exhibited higher yield strength (0.2% tensile yield strength (TYS)), ultimate strength (UTS), failure strain and work of fracture (WOF) (+19%, +21%, +113% and +162%, respectively). Compared to monolithic AZ31 (compression levels), the corresponding nanocomposite exhibited higher yield strength (0.2% compressive yield strength (CYS)) and ultimate strength (UCS), lower failure strain and higher WOF (+5%, +5%, −4% and +11%, respectively). Compared to monolithic ZK60A (tension levels), the corresponding nanocomposite exhibited lower 0.2% TYS and higher UTS, failure strain and WOF (−4%, +13%, +170% and +200%, respectively). Compared to monolithic ZK60A (compression levels), the corresponding nanocomposite exhibited lower 0.2% CYS and higher UCS, failure strain and WOF (−10%, +7%, +15% and +26%, respectively). The capability of Al2O3 nanoparticles to enhance the properties of cast magnesium alloys in a way never seen before with micron length scale reinforcements is clearly demonstrated.

  18. Exploring metalorganic chemical vapor deposition of Si-alloyed Al2O3 dielectrics using disilane

    NASA Astrophysics Data System (ADS)

    Chan, Silvia H.; Keller, Stacia; Koksaldi, Onur S.; Gupta, Chirag; DenBaars, Steven P.; Mishra, Umesh K.

    2017-04-01

    The alloying of Al2O3 films with Si is a promising route to improve gate dielectric properties in Si- and wide-bandgap- based MOS devices. Here we present a comprehensive investigation of alloyed film growth by metalorganic chemical vapor deposition (MOCVD) using trimethylaluminum, disilane, and oxygen precursors over a variety of temperature and flow conditions. Binary growth rates of Al2O3 and SiO2 were evaluated to explain the aggregate growth kinetics of Si-alloyed Al2O3 films, and refractive indices were used to monitor Si incorporation efficiencies. The temperature dependence of the reaction rate of disilane with oxygen was found to be similar to that of trimethylaluminum and oxygen, leading to well-behaved deposition behavior in the kinetic and mass-transport controlled growth regimes. Compositional predictability and stability was achieved over a wider growth space with disilane-based growths as compared to previous work, which used silane as the Si precursor instead. In situ (Al,Si)O/n-GaN MOS gate stacks were grown and showed increasing reduction of net positive fixed charges with higher Si composition.

  19. Tribological Behavior of A356/Al2O3 Surface Nanocomposite Prepared by Friction Stir Processing

    NASA Astrophysics Data System (ADS)

    Mazaheri, Y.; Karimzadeh, F.; Enayati, M. H.

    2014-04-01

    Surface A356 aluminum alloy matrix composites containing micro and nanosized Al2O3 are prepared by a new approach utilizing high-velocity oxy-fuel spraying and friction stir processing (FSP). Optical and scanning electron microscopy, microhardness, and wear tests were used to characterize the surface composites. Results indicated that, the presence of Al2O3 in matrix can improve the mechanical properties of specimens. The microhardness of surface composites containing micro and nanosized Al2O3 were 89.8 ± 2.6 HV and 109.7 ± 2.5 HV, respectively, which were higher than those for the as-received (79.6 ± 1.1 HV) and the FSPed A356-T6 with no alumina powder (66.8 ± 0.9 HV). Surface composites revealed low friction coefficients and wear rates, which were significantly lower than those obtained for substrate. The wear mass losses of the as-received, the FSPed, and surface micro and nanocomposite specimens after 500-m sliding distance were 50.5, 55.6, 31, and 17.2 mg, respectively. Scanning electron microscopy tests revealed different wear mechanisms on the surface of the wear test specimens.

  20. The electrical conductivity of Al2O3 under shock-compression

    PubMed Central

    Liu, Hanyu; Tse, John S.; Nellis, W. J.

    2015-01-01

    Sapphire (Al2O3) crystals are used below 100 GPa as anvils and windows in dynamic-compression experiments because of their transparency and high density. Above 100 GPa shock pressures, sapphire becomes opaque and electrically conducting because of shock-induced defects. Such effects prevent temperature and dc conductivity measurements of materials compressed quasi-isentropically. Opacities and electrical conductivities at ~100 GPa are non-equilibrium, rather than thermodynamic parameters. We have performed electronic structure calculations as a guide in predicting and interpreting shock experiments and possibly to discover a window up to ~200 GPa. Our calculations indicate shocked sapphire does not metallize by band overlap at ~300 GPa, as suggested previously by measured non-equilibrium data. Shock-compressed Al2O3 melts to a metallic liquid at ~500 GPa and 10,000 K and its conductivity increases rapidly to ~2000 Ω−1cm−1 at ~900 GPa. At these high shock temperatures and pressures sapphire is in thermal equilibrium. Calculated conductivity of Al2O3 is similar to those measured for metallic fluid H, N, O, Rb, and Cs. Despite different materials, pressures and temperatures, and compression techniques, both experimental and theoretical, conductivities of all these poor metals reach a common end state typical of strong-scattering disordered materials. PMID:26239369

  1. Theoretical insight into Cobalt subnano-clusters adsorption on α-Al2O3 (0001)

    NASA Astrophysics Data System (ADS)

    Gao, Fen-e.; Ren, Jun; Wang, Qiang; Li, Debao; Hou, Bo; Jia, Litao; Cao, Duanlin

    2017-02-01

    The investigation on the structural stability, nucleation, growth and interaction of cobalt cluster Con(n=2-7) on the α-Al2O3(0001) surface by using density functional theory methods has been reported. Energetically, the most favorable adsorption sites were identified and the strongest adsorption energy cluster is the tetrahedral Co4 cluster. On the other hand, the nucleation of Con(n=2-7) clusters on the surface is exothermic and thermodynamically favorable. Moreover, even-odd alternation was found with respect to clusters nucleation as a function of the number of cobalt atoms (for n=1-7). Meanwhile, the Con clusters can be adsorbed on the surface stably owing to the charge transfer from Co atoms to Al and O atoms of the Al2O3 substrate. In addition, we establish the crucial importance of monomer, dimer and trimer diffusion on the surface. The diffusion of the monomer cobalt from Al(3) to O(5) or O(5) to Al(4) site is quite easy on the Al2O3(0001) surface, whereas the diffusion of the Co2 dimer is thermodynamically unfavorable by compared with that of the Co adatom and Co3 trimer.

  2. Effect of adsorbed films on friction of Al2O3-metal systems

    NASA Technical Reports Server (NTRS)

    Pepper, S. V.

    1976-01-01

    The kinetic friction of polycrystalline Al2O3 sliding on Cu, Ni, and Fe in ultrahigh vacuum was studied as a function of the surface chemistry of the metal. Clean metal surfaces were exposed to O2, Cl2, C2H4, and C2H3Cl, and the change in friction due to the adsorbed species was observed. Auger electron spectroscopy assessed the elemental composition of the metal surface. It was found that the systems exposed to Cl2 exhibited low friction, interpreted as the van der Waals force between the Al2O3 and metal chloride. The generation of metal oxide by oxygen exposures resulted in an increase in friction, interpreted as due to strong interfacial bonds established by reaction of metal oxide with Al2O3 to form the complex oxide (spinel). The only effect of C2H4 was to increase the friction of the Fe system, but C2H3Cl exposures decreases friction in both Ni and Fe systems, indicating the dominance of the chlorine over the ethylene complex on the surface

  3. Insight into the effects of different ageing protocols on Rh/Al2O3 catalyst

    NASA Astrophysics Data System (ADS)

    Zhao, Baohuai; Ran, Rui; Cao, Yidan; Wu, Xiaodong; Weng, Duan; Fan, Jun; Wu, Xueyuan

    2014-07-01

    In this work, a catalyst of Rh loaded on Al2O3 was prepared by impregnating method with rhodium nitrate aqueous solution as the Rh precursor. The catalyst was aged under different protocols (lean, rich, inert and cyclic) to obtain several aged samples. All the Rh/Al2O3 samples were characterized by X-ray diffraction (XRD), Brunauer-Emmett-Teller (BET) method, CO-chemisorption, H2-temperature programmed reduction (H2-TPR), transmission electron microscope (TEM) and X-ray photoelectron spectroscopy (XPS). It was found that a specific ageing treatment could strongly affect the catalytic activity. The N2 aged and the H2 aged samples had a better catalytic activity for CO + NO reaction than the fresh sample while the air aged and the cyclic aged samples exhibited much worse activity. More surface Rh content and better reducibility were obtained in the N2 and the H2 aged samples and the Rh particles existed with an appropriate size, which were all favorable to the catalytic reaction. However, the air and the cyclic ageing protocols induced a strong interaction between Rh species and the Al2O3 support, which resulted in a severe sintering of particles of Rh species and the loss of active sites. The structure evolution scheme of the catalysts aged in different protocols was also established in this paper.

  4. Enhanced thermal stability of carbon nanotubes by plasma surface modification in Al2O3 composites

    NASA Astrophysics Data System (ADS)

    Cho, Hoonsung; Shi, Donglu; Guo, Yan; Lian, Jie; Ren, Zhifeng; Poudel, Bed; Song, Yi; Abot, Jandro L.; Singh, Dileep; Routbort, Jules; Wang, Lumin; Ewing, Rodney C.

    2008-10-01

    A plasma polymerization method was employed to deposit an ultrathin pyrrole film of 3 nm onto the surfaces of single wall carbon nanotubes (SWCNTs) and Al2O3 nanoparticles for developing high-strength nanocomposites. The surfaces of plasma coated SWCNTs and Al2O3 nanoparticles were studied by high resolution transmission electron microscopy (TEM) and time-of-flight secondary ion mass spectroscopy. After sintering the SWCNTs-Al2O3 composites at different temperatures (maximum of 1200 °C), the thermal stability of plasma-coated SWCNTs was significantly increased, compared to their uncoated counterparts. After hot-press sintering, the SWCNTs without plasma coating were essentially decomposed into amorphous clusters in the composites, leading to degraded mechanical properties. However, under the same sintering conditions, the plasma surface modified SWCNTs were well preserved and distributed in the composite matrices. The effects of plasma surface coating on the thermal stability of SWCNTs and mechanical behavior of the nanocomposites are discussed.

  5. Room Temperature Radiolytic Synthesized Cu@CuAlO2-Al2O3 Nanoparticles

    PubMed Central

    Abedini, Alam; Saion, Elias; Larki, Farhad; Zakaria, Azmi; Noroozi, Monir; Soltani, Nayereh

    2012-01-01

    Colloidal Cu@CuAlO2-Al2O3 bimetallic nanoparticles were prepared by a gamma irradiation method in an aqueous system in the presence of polyvinyl pyrrolidone (PVP) and isopropanol respectively as a colloidal stabilizer and scavenger of hydrogen and hydroxyl radicals. The gamma irradiation was carried out in a 60Co gamma source chamber with different doses up to 120 kGy. The formation of Cu@CuAlO2-Al2O3 nanoparticles was observed initially by the change in color of the colloidal samples from colorless to brown. Fourier transform infrared spectroscopy (FTIR) confirmed the presence of bonds between polymer chains and the metal surface at all radiation doses. Results of transmission electron microscopy (TEM), energy dispersive X-ray spectrometry (EDX), and X-ray diffraction (XRD) showed that Cu@CuAlO2-Al2O3 nanoparticles are in a core-shell structure. By controlling the absorbed dose and precursor concentration, nanoclusters with different particle sizes were obtained. The average particle diameter increased with increased precursor concentration and decreased with increased dose. This is due to the competition between nucleation, growth, and aggregation processes in the formation of nanoclusters during irradiation. PMID:23109893

  6. A short-time fading study of Al2O3:C

    NASA Astrophysics Data System (ADS)

    Nascimento, L. F.; Vanhavere, F.; Silva, E. H.; Deene, Y. De

    2015-01-01

    This paper studies the short-time fading from Al2O3:C by measuring optically stimulated luminescence (OSL) signals (Total OSL: TOSL, and Peak OSL: POSL) from droplets and Luxel™ pellets. The influence of various bleaching regimes (blue, green and white) and light power is compared. The fading effect is the decay of the OSL signal in the dark at room temperature. Al2O3:C detectors were submitted to various bleaching regimes, irradiated with a reference dose and read out after different time spans. Investigations were carried out using 2 mm size droplet detectors, made of thin Al2O3:C powder mixed with a photocured polymer. Tests were compared to Luxel™-type detectors (Landauer Inc.). Short-time post-irradiation fading is present in OSL results (TOSL and POSL) droplets for time spans up to 200 s. The effect of short-time fading can be lowered/removed when treating the detectors with high-power and/or long time bleaching regimes; this result was observed in both TOSL and POSL from droplets and Luxel™.

  7. Simulation of pressure-induced phase transition in liquid and amorphous Al2 O3

    NASA Astrophysics Data System (ADS)

    Hoang, Vo Van; Oh, Suhk Kun

    2005-08-01

    We investigated the pressure-induced structural transformation in liquid and amorphous Al2O3 by the molecular dynamics (MD) method. Simulations were done in the basic cube under periodic boundary conditions containing 3000 ions with Born-Mayer type pair potentials. The structure of the amorphous Al2O3 model with real density at ambient pressure is in good agreement with Lamparter’s experiment. In order to study the amorphous-amorphous phase transition, 23 models of amorphous alumina at the temperature of 350K and at densities ranging from 2.83to5.0gcm-3 had been built. The microstructure of the Al2O3 systems had been analyzed through pair radial distribution functions, coordination number distributions, interatomic distances, and bond-angle distributions. Here we found clear evidence of a structural transition in amorphous alumina from a tetrahedral to an octahedral network upon compression. According to our results, this transformation occurred at densities ranging from 3.6to4.05gcm-3 . We also presented the amorphous-amorphous phase transition from an octahedral to a tetrahedral network structure upon decompression at densities ranging from 5.00to2.83gcm-3 . Also, the same study was carried out for the liquid state of the system at the temperature of 3500K , and the liquid-liquid phase transition had been discussed.

  8. Solid state reduction of chromium (VI) pollution for Al2O3-Cr metal ceramics application

    NASA Astrophysics Data System (ADS)

    Zhu, Hekai; Fang, Minghao; Huang, Zhaohui; Liu, Yangai; Tang, Hao; Min, Xin; Wu, Xiaowen

    2016-04-01

    Reduction of chromium (VI) from Na2CrO4 through aluminothermic reaction and fabrication of metal-ceramic materials from the reduction products have been investigated in this study. Na2CrO4 could be successfully reduced into micrometer-sized Cr particles in a flowing Ar atmosphere in presence of Al powder. The conversion ratio of Na2CrO4 to metallic Cr attained 96.16% efficiency. Al2O3-Cr metal-ceramic with different Cr content (5 wt%, 10 wt%, 15 wt%, 20 wt%) were further prepared from the reduction product Al2O3-Cr composite powder, and aluminum oxide nanopowder via pressure-less sintering. The phase composition, microstructure and mechanical properties of metal-ceramic composites were characterized to ensure the potential of the Al2O3-Cr composite powder to form ceramic materials. The highest relative density and bending strength can reach 93.4% and 205 MP, respectively. The results indicated that aluminothermic reduction of chromium (VI) for metal-ceramics application is a potential approach to remove chromium (VI) pollutant from the environment.

  9. Impact of Al2O3 on the aggregation and deposition of graphene oxide.

    PubMed

    Ren, Xuemei; Li, Jiaxing; Tan, Xiaoli; Shi, Weiqun; Chen, Changlun; Shao, Dadong; Wen, Tao; Wang, Longfei; Zhao, Guixia; Sheng, Guoping; Wang, Xiangke

    2014-05-20

    To assess the environmental behavior and impact of graphene oxide (GO) on living organisms more accurately, the aggregation of GO and its deposition on Al2O3 particles were systematically investigated using batch experiments across a wide range of solution chemistries. The results indicated that the aggregation of GO and its deposition on Al2O3 depended on the solution pH and the types and concentrations of electrolytes. MgCl2 and CaCl2 destabilized GO because of their effective charge screening and neutralization, and the presence of NaH2PO4 and poly(acrylic acid) (PAA) improved the stability of GO with the increase in pH values as a result of electrostatic interactions and steric repulsion. Specifically, the dissolution of Al2O3 contributed to GO aggregation at relatively low pH or high pH values. Results from this study provide critical information for predicting the fate of GO in aquatic-terrestrial transition zones, where aluminum (hydro)oxides are present.

  10. Properties of the surface of ceramic formed under laser irradiation of Al2O3-TiO2 compacts

    NASA Astrophysics Data System (ADS)

    Márquez Aguilar, P. A.; Vlasova, M.; Escobar Martínez, A.; Tomila, T.; Stetsenko, V.

    2014-04-01

    The phase formation in the laser irradiation area from xAl2O3-yTiO2 compacts and the properties of the surface layer have been investigated by the XRD, IR, and SEM methods. Main phases precipitating from eutectic melt are tialite, corundum, and rutile. A high temperature on the surface of specimens leads to the development of dissociation processes of these compounds and molecules of the gaseous medium. As dissociation products fly apart and pass through different temperature zone, there are formed different metal oxides, metal hydroxides, and thermolysis products. When these different oxides are deposited on the surface of the ceramic, they form layers with different adhesion degrees.

  11. ALD TiO2-Al2O3 Stack: An Improved Gate Dielectrics on Ga-polar GaN MOSCAPs

    DOE PAGES

    Wei, Daming; Edgar, James H.; Briggs, Dayrl P.; ...

    2014-10-15

    This research focuses on the benefits and properties of TiO2-Al2O3 nano-stack thin films deposited on Ga2O3/GaN by plasma-assisted atomic layer deposition (PA-ALD) for gate dielectric development. This combination of materials achieved a high dielectric constant, a low leakage current, and a low interface trap density. Correlations were sought between the films’ structure, composition, and electrical properties. The gate dielectrics were approximately 15 nm thick and contained 5.1 nm TiO2, 7.1 nm Al2O3 and 2 nm Ga2O3 as determined by spectroscopic ellipsometry. The interface carbon concentration, as measured by x-ray photoelectron spectroscopy (XPS) depth profile, was negligible for GaN pretreated bymore » thermal oxidation in O2 for 30 minutes at 850°C. The RMS roughness slightly increased after thermal oxidation and remained the same after ALD of the nano-stack, as determined by atomic force microscopy. The dielectric constant of TiO2-Al2O3 on Ga2O3/GaN was increased to 12.5 compared to that of pure Al2O3 (8~9) on GaN. In addition, the nano-stack's capacitance-voltage (C-V) hysteresis was small, with a total trap density of 8.74 × 1011 cm-2. The gate leakage current density (J=2.81× 10-8 A/cm2) was low at +1 V gate bias. These results demonstrate the promising potential of plasma ALD deposited TiO2/Al2O3 for serving as the gate oxide on Ga2O3/GaN based MOS devices.« less

  12. Size effect of (Al2O3-Y2O3)/YSZ micro-laminated coating on high-temperature oxidation resistance

    NASA Astrophysics Data System (ADS)

    Yao, Junqi; Lv, Lili; He, Yedong; Wang, Deren

    2013-08-01

    The size effect of structure plays an important role in the high-temperature oxidation and spallation resistance of micro-laminated coating on alloy substrate. In this study, (Al2O3-Y2O3)/YSZ micro-laminated coatings with different thickness ratios and layer numbers were prepared on MCrAlY alloy by electrolytic deposition and microwave sintering under pressure. The oxidation and spallation resistance of the micro-laminated coatings were investigated by cyclic oxidation tests in air at 1050 °C for 200 h. Results indicate that both oxidation resistance and spallation resistance of the coating have been improved significantly, by increasing the thickness ratio of YSZ layer to Al2O3-Y2O3 layer and layer number in a specific range. In such micro-laminated coating, increasing the thickness ratio of YSZ layer to Al2O3-Y2O3 layer can improve the apparent thermal expansion coefficient of coating and decrease the thermal stresses. While, increasing the layer number can extend the crack propagation paths and improve the plasticity and fracture toughness. They can improve the mechanical properties of micro-laminated coating and exhibit excellent cracking and spallation resistance. This would give rise to the beneficial effects on suppressing the oxygen inward diffusion and consequently improve the high-temperature oxidation resistance of micro-laminated coating. Such size effect would provide reference values in the structural design of micro-laminated coating in high-temperature application.

  13. Microstructure and High-Temperature Mechanical Properties of ZrO2-Al2O3-SiC Ceramics

    NASA Astrophysics Data System (ADS)

    Zhang, Xiu-Ping; Ouyang, Jia-Hu; Wang, Yu-Jin; Liu, Zhan-Guo; Wang, Ya-Ming

    2015-09-01

    In the present work, ZrO2-Al2O3 ceramics incorporated with and without β-SiC were prepared by hot pressing. ZrO2-Al2O3 ceramic powder used in this study is a mixture of 71 vol.% YSZ (3 mol.% Y2O3 partially stabilized zirconia) and 29 vol.% α-Al2O3. β-SiC powders with different volume fractions are added into the ZrO2-Al2O3 powder to form the composite powder. The microstructure and high-temperature mechanical properties of ZrO2-Al2O3-SiC ceramics were investigated by tailoring the compositions and sintering parameters to optimize the strengthening mechanisms. For a comparative study, the TZ3Y20A powder was also hot-pressed under identical sintering condition to form dense bulk ceramic. ZrO2-Al2O3-SiC ceramics consist mainly of t-ZrO2, α-Al2O3, and β-SiC phases. SiC particles in the ZrO2-Al2O3 ceramic restrain the grain growth of the oxide matrix. The incorporation of SiC into ZrO2-Al2O3 ceramic enhances high-temperature flexural strength at 1273 K. ZrO2-Al2O3 ceramic incorporated with 15 vol.% SiC has a flexural strength of 518 MPa at 1273 K, much higher than that (201 MPa) of unmodified ZrO2-Al2O3 ceramic.

  14. Interaction of terahertz radiation with surface and interface plasmon-phonons in AlGaAs/GaAs and GaN/Al2O3 heterostructures

    NASA Astrophysics Data System (ADS)

    Požela, J.; Požela, K.; Šilėnas, A.; Širmulis, E.; Jucienė, V.

    2013-01-01

    Surface phonon and plasmon-phonon polariton characteristics of GaAs, Al x Ga1- x As/GaAs, and GaN/Al2O3 layered structures are investigated by means of terahertz radiation reflection spectroscopy. The strong resonant absorption peaks and selective emission of the THz radiation dependent upon the lattice composition and free electron density in these layered structures are experimentally observed and analyzed.

  15. Coherent 3D nanostructure of γ-Al2O3: Simulation of whole X-ray powder diffraction pattern

    NASA Astrophysics Data System (ADS)

    Pakharukova, V. P.; Yatsenko, D. A.; Gerasimov, E. Yu.; Shalygin, A. S.; Martyanov, O. N.; Tsybulya, S. V.

    2017-02-01

    The structure and nanostructure features of nanocrystalline γ-Al2O3 obtained by dehydration of boehmite with anisotropic platelet-shaped particles were investigated. The original models of 3D coherent nanostructure of γ-Al2O3 were constructed. The models of nanostructured γ-Al2O3 particles were first confirmed by a direct simulation of powder X-Ray diffraction (XRD) patterns using the Debye Scattering Equation (DSE) with assistance of high-resolution transmission electron microscopy (HRTEM) study. The average crystal structure of γ-Al2O3 was shown to be tetragonally distorted. The experimental results revealed that thin γ-Al2O3 platelets were heterogeneous on a nanometer scale and nanometer-sized building blocks were separated by partially coherent interfaces. The XRD simulation results showed that a specific packing of the primary crystalline blocks in the nanostructured γ-Al2O3 particles with formation of planar defects on {001}, {100}, and {101} planes nicely accounted for pronounced diffuse scattering, anisotropic peak broadening and peak shifts in the experimental XRD pattern. The identified planar defects in cation sublattice seem to be described as filling cation non-spinel sites in existing crystallographic models of γ-Al2O3 structure. The overall findings provided an insight into the complex nanostructure, which is intrinsic to the metastable γ-Al2O3 oxide.

  16. Structural and Magnetic Properties of Fe and Au Ion-Implanted Al2O3 Single Crystals

    NASA Astrophysics Data System (ADS)

    Kinoshita, Ryosuke; Sakamoto, Isao; Hayashi, Nobuyuki; Nomura, Kiyoshi; Honda, Shigeo; Ishida, Tomoya; Iio, Satoshi; Tashiro, Hiroyuki; Toriyama, Tamotsu

    2011-01-01

    Au ion implantation in Fe ion-implanted Al2O3 (Fe/Al2O3) has been performed in order to tailor the structural, magnetic and optical properties of Fe granules in Al2O3 matrix. After Au ion implantation, Rutherford backscattering (RBS) measurements indicate the decrease and the redistribution of retained Fe atoms with the inclusion of Au atoms, and the patterns of X-ray diffraction (XRD) show the formation of Au granules in the Fe/Al2O3. Besides, the magnetization curves of the Fe/Al2O3 after Au ion implantation show still the superparamagnetic characteristics and the decrease of saturation magnetization, and the optical absorption measurements indicate the formation of Au granules in the Fe/Al2O3 in accordance with the XRD result. In addition, we investigated a behavior of Fe granules in Al2O3 matrix by conversion electron Mössbauer spectroscopy (CEMS), which indicates the decrease of superparamagnetic state as a function of Au ion dose. As a result, it is suggested that Au ion implantation has potentialities to tailor the physical properties of Fe granules in Al2O3 matrix.

  17. Electrochemical synthesis of polypyrrole-Al2O3 composite coating on 316 stainless steel for corrosion protection

    NASA Astrophysics Data System (ADS)

    Yan, Qun; Li, Chuanxian; Huang, Tingting; Yang, Fei

    2017-03-01

    Polypyrrole (PPy)-Al2O3 composite coating was electrochemically deposited on 316 stainless steel (316 SS) by cyclic voltammetry technique. Scanning electron microscopy (SEM) and Fourier transform infrared spectroscopy (FT-IR) were employed to understand the morphology and composition of the PPy-Al2O3 coated SS. The corrosion protection ability of the PPy-Al2O3 coating was studied using open circuit potential (Eocp)-time measurements, polarization curves, and electrochemical impedance spectroscopy (EIS) after the electrodes had been immersed in a 3.5 wt% NaCl solution as the corrosive media. The results showed that PPy-Al2O3 composite coatings have a homogeneous and smooth surface without detectable cracks. Anodic polarization analysis revealed that the hybrid films provided an exceptional barrier and corrosion protection in comparison with PPy coating. The EIS studies indicated that the charge transfer resistance increases with the presence of PPy-Al2O3. PPy-Al2O3 composite coating provides better corrosion protection and can be considered as a coating material to protect 316SS. With increase in Al2O3/Py mole ratio, PPy-Al2O3 coatings tend to exhibit a better corrosion resistance ability.

  18. 3D and 2D structural characterization of 1D Al/Al2 O3 biphasic nanostructures.

    PubMed

    Miró, M Martinez; Veith, M; Lee, J; Soldera, F; Mücklich, F; Bennewitz, R; Aktas, C

    2015-05-01

    1D Al/Al2 O3 nanostructures have been synthesized by chemical vapour deposition (CVD) of the molecular precursor [(t) BuOAlH2 ]2 . The deposited nanostructures grow chaotically on the substrate forming a layer with a high porosity (80%). Depending on the deposition time, diverse nanostructured surfaces with different distribution densities were achieved. A three-dimensional (3D) reconstruction has been evaluated for every nanostructure density using the Focus Ion Beam (FIB) tomography technique and reconstruction software tools. Several structural parameters such as porosity, Euler number, geometrical tortuosity and aspect ratio have been quantified through the analysis with specified software of the reconstructions. Additionally roughness of the prepared surfaces has been characterized at micro- and nanoscale using profilometry and AFM techniques, respectively. While high aspects ratio around 20-30 indicates a strong anisotropy in the structure, high porosity values (around 80%) is observed as a consequence of highly tangled geometry of such 1D nanostructures.

  19. Research on microcracks avoidance in processing of α-Al2O3 by ultrashort laser pulses

    NASA Astrophysics Data System (ADS)

    Wang, Cheng-Wei; Zhao, Quan-Zhong

    2013-07-01

    The optical crystal α-Al2O3 has been widely used as the matrix of ruby and blue sapphire for its wide transparency, high thermal conductivity, big scale and low cost. α-Al2O3 is so hard that cutter is easily abraded. Micromachining of α-Al2O3 by ultrashort pulsed laser is superior to the traditional mechanical approach as its non-contact and cold machining features. However, unexpected cracks on the surface of α-Al2O3 are observed after femtosecond laser machining. In order to hinder the crack source from stretching, we optimize the laser parameters accompanied with annealing. The crack-free machining can be achieved. Three-dimensional α-Al2O3 microstructures free from fracture, such as cylinder, barrel and sphere are demonstrated.

  20. Behavior of Al2O3 and SiO2 with heating in a Cl2 + CO stream

    NASA Technical Reports Server (NTRS)

    Shchetinin, L. K.

    1984-01-01

    Differential thermal analysis (DTA) and Thermogravimetric analysis (TGA) were used to study the chlorination of alpha-Al2O3, gamma-Al2O3 and amorphous SiO2 in a Cl + CO stream, for the preparation of AlCl3 and SiCl4. The chlorination starting temperatures were 235 deg for Al2O3 and 680 deg for SiO2. The chlorination of alpha- and gamma-Al2O3 takes place via the formation of AlOCl as an intermediate product, and its subsequent dissociation at 480 to 560 deg, according to 3AlOCl yields AlCl3 + Al2O3. The chlorination activation energies are given for the three oxides.

  1. Nanoclusters of MoO3-x embedded in an Al2O3 matrix engineered for customizable mesoscale resistivity and high dielectric strength

    NASA Astrophysics Data System (ADS)

    Tong, William M.; Brodie, Alan D.; Mane, Anil U.; Sun, Fuge; Kidwingira, Françoise; McCord, Mark A.; Bevis, Christopher F.; Elam, Jeffrey W.

    2013-06-01

    We have synthesized a material consisting of conducting metal oxide (MoO3-x) nanoclusters embedded in a high-dielectric-strength insulator (Al2O3) matrix. The resistivity of this material can be customized by varying the concentration of the MoO3-x nanoclusters. The Al2O3 protects the MoO3-x from stoichiometry change, thus conserving the number of carriers and maintaining a high dielectric strength. This composite material is grown by atomic layer deposition, a thin film deposition technique suitable for coating 3D structures. We applied these atomic layer deposition composite films to our 3D electron-optical micro electrical mechanical systems devices and greatly improved their performance.

  2. Dynamic atmospheres and winds of cool luminous giants. I. Al2O3 and silicate dust in the close vicinity of M-type AGB stars

    NASA Astrophysics Data System (ADS)

    Höfner, S.; Bladh, S.; Aringer, B.; Ahuja, R.

    2016-10-01

    Context. In recent years, high spatial resolution techniques have given valuable insights into the complex atmospheres of AGB stars and their wind-forming regions. They make it possible to trace the dynamics of molecular layers and shock waves, to estimate dust condensation distances, and to obtain information on the chemical composition and size of dust grains close to the star. These are essential constraints for understanding the mass loss mechanism, which presumably involves a combination of atmospheric levitation by pulsation-induced shock waves and radiation pressure on dust, forming in the cool upper layers of the atmospheres. Aims: Spectro-interferometric observations indicate that Al2O3 condenses at distances of about 2 stellar radii or less, prior to the formation of silicates. Al2O3 grains are therefore prime candidates for producing the scattered light observed in the close vicinity of several M-type AGB stars, and they may be seed particles for the condensation of silicates at lower temperatures. The purpose of this paper is to study the necessary conditions for the formation of Al2O3 and the potential effects on mass loss, using detailed atmosphere and wind models. Methods: We have constructed a new generation of Dynamic Atmosphere and Radiation-driven Wind models based on Implicit Numerics (DARWIN), including a time-dependent treatment of grain growth and evaporation for both Al2O3 and Fe-free silicates (Mg2SiO4). The equations describing these dust species are solved in the framework of a frequency-dependent radiation-hydrodynamical model for the atmosphere and wind structure, taking pulsation-induced shock waves and periodic luminosity variations into account. Results: Condensation of Al2O3 at the close distances and in the high concentrations implied by observations requires high transparency of the grains in the visual and near-IR region to avoid destruction by radiative heating. We derive an upper limit for the imaginary part of the refractive

  3. Removal of nitrate and phosphate using chitosan/Al2O3/Fe3O4 composite nanofibrous adsorbent: Comparison with chitosan/Al2O3/Fe3O4 beads.

    PubMed

    Bozorgpour, Farahnaz; Ramandi, Hossein Fasih; Jafari, Pooya; Samadi, Saman; Yazd, Shabnam Sharif; Aliabadi, Majid

    2016-12-01

    In the present study the chitosan/Al2O3/Fe3O4 composite nanofibrous adsorbent was prepared by electrospinning process and its application for the removal of nitrate and phosphate were compared with chitosan/Al2O3/Fe3O4 composite bead adsorbent. The influence of Al2O3/Fe3O4 composite content, pH, contact time, nitrate and phosphate initial concentrations and temperature on the nitrate and phosphate sorption using synthesized bead and nanofibrous adsorbents was investigated in a single system. The reusability of chitosan/Al2O3/Fe3O4 composite beads and nanofibers after five sorption-desorption cycles were carried out. The Box-Behnken design was used to investigate the interaction effects of adsorbent dosage, nitrate and phosphate initial concentrations on the nitrate and phosphate removal efficiency. The pseudo-second-order kinetic model and known Freundlich and Langmuir isotherm models were used to describe the kinetic and equilibrium data of nitrate and phosphate sorption using chitosan/Al2O3/Fe3O4 composite beads and nanofibers. The influence of other anions including chloride, fluoride and sulphate on the sorption efficiency of nitrate and phosphate was examined. The obtained results revealed the higher potential of chitosan/Al2O3/Fe3O4 composite nanofibers for nitrate and phosphate compared with chitosan/Al2O3/Fe3O4 composite beads.

  4. Aggregation and Colloidal Stability of Commercially Available Al2O3 Nanoparticles in Aqueous Environments

    PubMed Central

    Mui, Julie; Ngo, Jennifer; Kim, Bojeong

    2016-01-01

    The aggregation and colloidal stability of three, commercially-available, gamma-aluminum oxide nanoparticles (γ-Al2O3 NPs) (nominally 5, 10, and 20–30 nm) were systematically examined as a function of pH, ionic strength, humic acid (HA) or clay minerals (e.g., montmorillonite) concentration using dynamic light scattering and transmission electron microscopy techniques. NPs possess pH-dependent surface charges, with a point of zero charge (PZC) of pH 7.5 to 8. When pH < PZC, γ-Al2O3 NPs are colloidally stable up to 100 mM NaCl and 30 mM CaCl2. However, significant aggregation of NPs is pronounced in both electrolytes at high ionic strength. In mixed systems, both HA and montmorillonite enhance NP colloidal stability through electrostatic interactions and steric hindrance when pH ≤ PZC, whereas their surface interactions are quite limited when pH > PZC. Even when pH approximates PZC, NPs became stable at a HA concentration of 1 mg·L−1. The magnitude of interactions and dominant sites of interaction (basal planes versus edge sites) are significantly dependent on pH because both NPs and montmorillonite have pH-dependent (conditional) surface charges. Thus, solution pH, ionic strength, and the presence of natural colloids greatly modify the surface conditions of commercial γ-Al2O3 NPs, affecting aggregation and colloidal stability significantly in the aqueous environment. PMID:28335218

  5. Sulfation and Desulfation Behavior of Pt-BaO/MgO-Al2O3 NOx Storage Reduction Catalyst.

    PubMed

    Jeong, Soyeon; Kim, Do Heui

    2016-05-01

    The comparative study between Pt-BaO/Al2O3 and Pt-BaO/MgO-Al2O3 gives the information about the effect of MgO addition to Al2O3 support on the sulfation and desulfation behavior of Pt-BaO/MgO-Al2O3 NOx storage reduction catalyst. The sulfated two samples were analyzed by using element analysis (EA), X-ray diffraction (XRD), H2 temperature programmed reaction (H2 TPRX) and NOx uptake measurement. The amount of sulfur uptake on 2 wt% Pt-20 wt% BaO/Al2O3 and 2 wt% Pt-20 wt% BaO/MgO-Al2O3 are almost identical as 0.45 and 0.40 of S/Ba, respectively, which yields the drastic decrease in NOx uptake for both sulfated samples. However, after desulfa- tion with H2 at 600 degrees C, the residual sulfur amount on MgO-Al2O3 supported catalyst is three times larger than that on Al2O3 supported one, indicating that sulfur species formed on the former are more stable than those on the latter. It is also well corresponding to the H2 TPRX results where the main H2S peak from MgO-Al2O3 supported sample is observed at higher temperature than Al2O3 supported one, resulting in the lower NOx uptake activity of former sample than the latter one. Meanwhile, after desulfation of MgO-Al2O3 supported sample at 700 degrees C and 800 degrees C, the activity is recovered more significantly due to the removal of the large amount of sulfur while Al2O3 supported one decreases monotonically due to the sintering of Pt crystallite and the formation of BaAl2O4 phase. It is summarized that MgO-Al2O3 supported catalyst enhances the thermal stability of the catalyst, however, forms the stable sulfate species, which needs to be improved to develop the more sulfur resistant NSR catalyst system.

  6. Atomistic simulation of the pressure-temperature-volume diagram in α-Al 2O 3

    NASA Astrophysics Data System (ADS)

    Franco, R.; Blanco, M. A.; Martín Pendás, A.; Francisco, E.; Recio, J. M.

    1996-04-01

    We report the results of a theoretical investigation that explores for the first time temperature effects on the pressure-volume relationship in corundum. The ionic interactions within the α-Al 2O 3 crystal are modelized using the electron gas formalism along with electronic wavefunctions that are allowed to relax with crystal strains. A non-empirical Debye model is applied to account for the thermal contributions. Our study reveals that the crystal responds isotropically under both high-temperature and high-pressure conditions. Good agreement with hydrostatic and quasi-hydrostatic experimental data is achieved.

  7. Ultrasonic Al2O3 Ceramic Thermometry in High-Temperature Oxidation Environment

    PubMed Central

    Wei, Yanlong; Gao, Yubin; Xiao, Zhaoqian; Wang, Gao; Tian, Miao; Liang, Haijian

    2016-01-01

    In this study, an ultrasonic temperature measurement system was designed with Al2O3 high-temperature ceramic as an acoustic waveguide sensor and preliminarily tested in a high-temperature oxidation environment. The test results indicated that the system can indeed work stably in high-temperature environments. The relationship between the temperature and delay time of 26 °C–1600 °C ceramic materials was also determined in order to fully elucidate the high-temperature oxidation of the proposed waveguide sensor and to lay a foundation for the further application of this system in temperatures as high as 2000 °C. PMID:27845726

  8. Hydrogen and Carbon Effects on Al2O3 Surface Phases and Metal Deposition

    NASA Astrophysics Data System (ADS)

    Wang, Xiao-Gang; Smith, John

    2005-03-01

    Effects of H and C impurities on α-Al2O3 (0001) surface stability and metal wetting behavior are determined from first principles[1]. The ab initio surface phase diagram for H and C on the alumina surface reveals six distinct surface phases. These different surface phases exhibit a variety of adhesion strengths with Cu and Co, and correspondingly different wetting behaviors. These results are consistent with the varied wetting characteristics observed experimentally. [1] Xiao-Gang Wang and John R. Smith, Phys. Rev. B70, Rapid communications, 081401 (2004).

  9. Understanding the clean interface between covalent Si and ionic Al2O3.

    PubMed

    Xiang, H J; Da Silva, Juarez L F; Branz, Howard M; Wei, Su-Huai

    2009-09-11

    The atomic and electronic structures of the (001)-Si/(001)-gamma-Al(2)O(3) heterointerface are investigated by first principles total energy calculations combined with a newly developed "modified basin-hopping" method. It is found that all interface Si atoms are fourfold coordinated due to the formation of Si-O and unexpected covalent Si-Al bonds in the new abrupt interface model. And the interface has perfect electronic properties in that the unpassivated interface has a large LDA band gap and no gap levels. These results show that it is possible to have clean semiconductor-oxide interfaces.

  10. Viscosity affected by nanoparticle aggregation in Al2O3-water nanofluids.

    PubMed

    Duan, Fei; Kwek, Dingtian; Crivoi, Alexandru

    2011-03-22

    An investigation on viscosity was conducted 2 weeks after the Al2O3-water nanofluids having dispersants were prepared at the volume concentration of 1-5%. The shear stress was observed with a non-Newtonian behavior. On further ultrasonic agitation treatment, the nanofluids resumed as a Newtonian fluids. The relative viscosity increases as the volume concentrations increases. At 5% volume concentration, an increment was about 60% in the re-ultrasonication nanofluids in comparison with the base fluid. The microstructure analysis indicates that a higher nanoparticle aggregation had been observed in the nanofluids before re-ultrasonication.

  11. AlGaN/GaN metal oxide semiconductor heterostructure field-effect transistors with 4 nm thick Al2O3 gate oxide

    NASA Astrophysics Data System (ADS)

    Gregušová, D.; Stoklas, R.; Čičo, K.; Lalinský, T.; Kordoš, P.

    2007-08-01

    AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) with 4 nm thick Al2O3 gate oxide were prepared and their performance was compared with that of AlGaN/GaN HFETs. The MOSHFETs yielded ~40% increase of the saturation drain current compared with the HFETs, which is larger than expected due to the gate oxide passivation. Despite a larger gate-channel separation in the MOSHFETs, a higher extrinsic transconductance than that of the HFETs was measured. The drift mobility of the MOSHFETs, evaluated on large-gate FET structures, was significantly higher than that of the HFETs. The zero-bias mobility for MOSHFETs and HFETs was 1950 cm2 V-1 s-1 and 1630 cm2 V-1 s-1, respectively. These features indicate an increase of the drift velocity and/or a decrease of the parasitic series resistance in the MOSHFETs. The current collapse, evaluated from pulsed I-V measurements, was highly suppressed in the MOSHFETs with 4 nm thick Al2O3 gate oxide. This result, together with the suppressed frequency dispersion of the capacitance, indicates that the density of traps in the Al2O3/AlGaN/GaN MOSHFETs was significantly reduced.

  12. Excellent c-Si surface passivation by thermal atomic layer deposited aluminum oxide after industrial firing activation

    NASA Astrophysics Data System (ADS)

    Liao, B.; Stangl, R.; Ma, F.; Mueller, T.; Lin, F.; Aberle, A. G.; Bhatia, C. S.; Hoex, B.

    2013-09-01

    We demonstrate that by using a water (H2O)-based thermal atomic layer deposited (ALD) aluminum oxide (Al2O3) film, excellent surface passivation can be attained on planar low-resistivity silicon wafers. Effective carrier lifetime values of up to 12 ms and surface recombination velocities as low as 0.33 cm s-1 are achieved on float-zone wafers after a post-deposition thermal activation of the Al2O3 passivation layer. This post-deposition activation is achieved using an industrial high-temperature firing process which is commonly used for contact formation of standard screen-printed silicon solar cells. Neither a low-temperature post-deposition anneal nor a silicon nitride capping layer is required in this case. Deposition temperatures in the 100-400 °C range and peak firing temperatures of about 800 °C (set temperature) are investigated. Photoluminescence imaging shows that the surface passivation is laterally uniform. Corona charging and capacitance-voltage measurements reveal that the negative fixed charge density near the AlOx/c-Si interface increases from 1.4 × 1012 to 3.3 × 1012 cm-2 due to firing, while the midgap interface defect density reduces from 3.3 × 1011 to 0.8 × 1011 cm-2 eV-1. This work demonstrates that direct firing activation of thermal ALD Al2O3 is feasible, which could be beneficial for solar cell manufacturing.

  13. MAO-synthesized Al 2O 3-supported V 2O 5 nano-porous catalysts: Growth, characterization, and photoactivity

    NASA Astrophysics Data System (ADS)

    Bayati, M. R.; Zargar, H. R.; Molaei, R.; Golestani-Fard, F.; Zanganeh, N.; Kajbafvala, A.

    2010-04-01

    V 2O 5-loaded Al 2O 3 layers were successfully grown via micro-arc oxidation (MAO) process for the first time. Surface morphology and topography of the layers were investigated by scanning electron microscope (SEM) and atomic force microscope (AFM). It was found that the composite layers had a porous structure with a rough surface which is suitable for catalytic applications. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and energy dispersive X-ray spectroscopy (EDS) techniques were also employed to study phase structure and chemical composition of the composite layers. The layers consisted of γ-alumina, α-alumina, and vanadium pentoxide phases in which their relative contents varied with the applied voltage. Meanwhile, optical properties of the composite layers were investigated using UV-vis spectrophotometry technique, and the band gap energy was calculated as 3.15 eV. Furthermore, photocatalytic performance of the synthesized composite layers was determined by measuring the decomposition rate of methylene blue solution, as a model compound, on the surface of the layers under ultra violet photo-irradiation. It was found that more than 91% of the methylene blue was degraded after 120 min with a rate constant of k = 0.0192 min -1.

  14. Ab initio thermodynamic study of the structure and chemical bonding of a β-Ni1-xAlx/α-Al2O3 interface

    NASA Astrophysics Data System (ADS)

    Li, Hongtao; Feng, Jiwei; Zhang, Wenqing; Jiang, Wan; Gu, Hui; Smith, John R.

    2009-11-01

    The properties of an interface between a metallic alloy and an oxide are computed by combining ab initio quantum mechanics with thermodynamics. Results for the stability, structures, and chemical compositions of the β-Ni1-xAlx/α-Al2O3 interface are presented. We found that there are two types of stable structures for the interface. Type I is characterized by joining an Al-rich Ni-Al alloy with an Al-rich Al2O3 surface (terminated by two Al atomic layers). Type II is a junction of a Ni-rich Ni-Al alloy with an Al2O3 surface terminated by an oxygen atomic layer and with atomic migrations and interchanges within the interfacial region. Both types of interfaces exhibit Al accumulation on top of the oxide scale while an adjacent Ni-rich layer is found at the type-II interfaces. The atomic geometries, electronic structures, and chemical bonds of the two types of interfacial systems were analyzed. The calculated interfacial works of separation Wsep agree reasonably well with experimental data and earlier calculations.

  15. Highly ordered and vertically oriented TiO2/Al2O3 nanotube electrodes for application in dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Kim, Jae-Yup; Lee, Kyeong-Hwan; Shin, Junyoung; Park, Sun Ha; Kang, Jin Soo; Han, Kyu Seok; Sung, Myung Mo; Pinna, Nicola; Sung, Yung-Eun

    2014-12-01

    The surface of long TiO2 nanotube (NT) electrodes in dye-sensitized solar cells (DSSCs) was modified without post-annealing by using atomic layer deposition (ALD) for the enhancement of photovoltage. Vertically oriented TiO2 NT electrodes with highly ordered and crack-free surface structures over large areas were prepared by a two-step anodization method. The prepared TiO2 NTs had a pore size of 80 nm, and a length of 23 μm. Onto these TiO2 NTs, an Al2O3 shell of a precisely controlled thickness was deposited by ALD. The conformally coated shell layer was confirmed by high-resolution transmission electron microscopy, energy-dispersive x-ray spectroscopy, and x-ray photoelectron spectroscopy. The open-circuit voltage (Voc) of the DSSCs was gradually enhanced as the thickness of the Al2O3 shell of the TiO2/Al2O3 NT electrodes was increased, which resulted from the enhanced electron lifetime. The enhanced electron lifetime caused by the energy barrier effect of the shell layer was measured quantitatively by the open-circuit voltage decay technique. As a result, 1- and 2-cycle-coated samples showed enhanced conversion efficiencies compared to the bare sample.

  16. Technical Performance of the Luxel Al2O3:C Optically Stimulated Luminescence Dosemeter Element at Radiation Oncology and Nuclear Accident Dose Levels

    SciTech Connect

    Miller, Steven D.; Murphy, Mark K.

    2006-12-12

    The dose ranges typical for radiation oncology and nuclear accident dosimetry are on the order of 2?70 Gy and 0.1?5 Gy, respectively. In terms of solid-state passive dosimetry; thermoluminescent (TL) materials historically have been used extensively for these two applications, with silver-halide, leuco-dye, and BaFBr:Eu-based films being used on a more limited basis than TL for radiation oncology. This present work provides results on the performance of a film based on an aluminum oxide, Al2O3:C, for these dosimetry applications, using the optically-stimulated luminescence (OSL) readout method. There have been few investigations of Al2O3:C performance at radiation oncology and nuclear accident dose levels, and these have included minimal dosimetric and environmental effects information. Based on investigations already published, the authors of this present study determined that overall improvements over film and TLDs for this Al2O3:C OSL technology at radiation oncology and nuclear accident dose levels may include (1) a more tissue-equivalent response to photons compared to X-ray film, (2) higher sensitivity, (3) ability to reread dosemeters, and (4) diagnostic capability using small-area imaging. The results of the present investigation indicate that additional favorable performance characteristics for the Al2O3:C dosemeter are a wide dynamic range(0.001 to 100 Gy), a response insensitive to temperature and moisture over a wide range, negligible dose rate dependence, and minimal change in post-irradiation response. As a radiation detection medium, this OSL phosphor offers an assortment of dosimetry properties that will permit it to compete with current radiation detection technologies such as silver-halide, leuco-dye, and photostimulable-phosphor based films, as well as TLDs.

  17. Technical performance of the Luxel Al(2)O(3):C optically stimulated luminescence dosemeter element at radiation oncology and nuclear accident dose levels.

    PubMed

    Miller, Steven D; Murphy, Mark K

    2007-01-01

    The dose ranges typical for radiation oncology and nuclear accident dosimetry are on the order of 2-70 Gy and 0.1-5 Gy, respectively. In terms of solid-state passive dosimetry, thermoluminescent (TL) materials historically have been used extensively for these two applications, with silver-halide, leuco-dye and BaFBr:Eu-based films being used on a more limited basis than TL for radiation oncology. This present work provides results on the performance of a film based on an aluminum oxide, Al(2)O(3):C, for these dosimetry applications, using the optically stimulated luminescence (OSL) readout method. There have been few investigations of Al(2)O(3):C performance at radiation oncology and nuclear accident dose levels, and these have included minimal dosimetric and environmental effects information. Based on investigations already published, the authors of this present study determined that overall improvements over film and TLDs for this Al(2)O(3):C OSL technology at radiation oncology and nuclear accident dose levels may include (1) a more tissue-equivalent response to photons compared to X-ray film, (2) higher sensitivity, (3) ability to reread dosemeters and (4) diagnostic capability using small-area imaging. The results of the present investigation indicate that additional favourable performance characteristics for the Al(2)O(3):C dosemeter are a wide dynamic range (0.001-100 Gy), a response insensitive to temperature and moisture over a wide range, negligible dose rate dependence, and minimal change in post-irradiation response. As a radiation detection medium, this OSL phosphor offers an assortment of dosimetry properties that will permit it to compete with current radiation detection technologies such as silver-halide, leuco-dye and photostimulable-phosphor-based films, as well as TLDs.

  18. Enhanced Dielectric Properties and High-Temperature Microwave Absorption Performance of Zn-Doped Al2O3 Ceramic

    NASA Astrophysics Data System (ADS)

    Wang, Yuan; Luo, Fa; Wei, Ping; Zhou, Wancheng; Zhu, Dongmei

    2015-07-01

    To improve the dielectric and microwave absorption properties of Al2O3 ceramic, Zn-doped Al2O3 ceramic was prepared by conventional ceramic processing. X-ray diffraction analysis confirmed that Zn atoms successfully entered the Al2O3 ceramic lattice and occupied Al sites. The complex permittivity increased with increasing Zn concentration, which is mainly attributed to the increase in charged vacancy defects and densification of the Al2O3 ceramic. In addition, the temperature-dependent complex permittivity of 3% Zn-doped Al2O3 ceramic was determined in the temperature range from 298 K to 873 K. Both the real and imaginary parts of the complex permittivity increased monotonically with increasing temperature, which can be ascribed to the shortened relaxation time and increasing electrical conductivity. The increased complex permittivity leads to a great improvement in microwave absorption. In particular, when the temperature is up to 873 K, the 3% Zn-doped Al2O3 ceramic exhibited the best absorption performance with a maximum peak (-12.1 dB) and broad effective absorption bandwidth (reflection loss less than -10 dB from 9.3 GHz to 12.3 GHz). These results reveal that Zn-doped Al2O3 ceramic is a promising candidate for use as a kind of high-temperature microwave absorption material.

  19. Interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique

    NASA Astrophysics Data System (ADS)

    Liao, Xue-Yang; Zhang, Kai; Zeng, Chang; Zheng, Xue-Feng; En, Yun-Fei; Lai, Ping; Hao, Yue

    2014-05-01

    Frequency dependent conductance measurements are implemented to investigate the interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor (MOS) structures. Two types of device structures, namely, the recessed gate structure (RGS) and the normal gate structure (NGS), are studied in the experiment. Interface trap parameters including trap density Dit, trap time constant τit, and trap state energy ET in both devices have been determined. Furthermore, the obtained results demonstrate that the gate recess process can induce extra traps with shallower energy levels at the Al2O3/AlGaN interface due to the damage on the surface of the AlGaN barrier layer resulting from reactive ion etching (RIE).

  20. Electron stimulated oxidation of Al(111) in H2O vapor: Dipole orientation effects in the Al2O3 thin film

    NASA Astrophysics Data System (ADS)

    Popova, I.; Zhukov, V.; Yates, J. T.; Chen, J. G.

    1999-12-01

    The electron stimulated oxidation of Al(111) using H2O(g) as a source of oxygen has been investigated at 300 K using near edge x-ray absorption fine structure (NEXAFS) and Auger electron spectroscopy. Irradiation with electrons (100 eV, 50 μA/cm2) produced thick Al2O3 film layers (up to 15 Å), compared to the films grown thermally (4 Å) by the same water exposure. A preferential normal orientation of the O-Al bonds was found for the films grown by the electron assisted process, causing the O K-edge NEXAFS spectra to depend on the incident angle of the polarized x-ray beam. In contrast, little polarization of the O-Al bonds was found for the case of Al2O3 films grown by thermal oxidation in H2O(g).

  1. Characterization of interface defects in ALD Al2O3/p-GaSb MOS capacitors using admittance measurements in range from kHz to GHz

    NASA Astrophysics Data System (ADS)

    Gu, Siyuan; Min, Jie; Taur, Yuan; Asbeck, Peter M.

    2016-04-01

    Atomic layer deposited (ALD) Al2O3/p-type GaSb Metal-Oxide-Semiconductor (MOS) capacitors are studied with capacitance-voltage (C-V) and conductance-voltage (G-V) measurements using AC signal frequencies covering the range from kHz to GHz. The potential and limitations of the measurements at GHz frequencies for oxide and interface defect characterization are described. The effect of bulk oxide traps in communication with the GaSb valence band via hole tunneling is highlighted. Modeling indicates that the C-V and G-V frequency dispersions observed in the accumulation, flat-band and depletion regions of the Al2O3/p-GaSb MOS capacitors are due to combined contributions of bulk-oxide traps and interface traps.

  2. Cyclic Oxidation of FeCrAlY/Al2O3 Composites

    NASA Technical Reports Server (NTRS)

    Nesbitt, James A.; Draper, Susan L.; Barrett, Charles A.

    1999-01-01

    Three-ply FeCrAlY/Al2O3 composites and FeCrAlY matrix-only samples were cyclically oxidized at 1000 C and 1100 C for up to 1000 1-hr cycles. Fiber ends were exposed at the ends of the composite samples. Following cyclic oxidation, cracks running parallel to and perpendicular to the fibers were observed on the large surface of the composite. In addition, there was evidence of increased scale damage and spallation around the exposed fiber ends, particularly around the middle ply fibers. This damage was more pronounced at the higher temperature. The exposed fiber ends showed cracking between fibers in the outer plies, occasionally with Fe and Cr-rich oxides growing out of the cracks. Large gaps developed at the fiber/matrix interface around many of the fibers, especially those in the outer plies. Oxygen penetrated many of these gaps resulting in significant oxide formation at the fiber/matrix interface far within the composite sample. Around several fibers, the matrix was also internally oxidized showing Al2O3 precipitates in a radial band around the fibers. The results show that these composites have poor cyclic oxidation resistance due to the CTE mismatch and inadequate fiber/matrix bond strength at temperatures of 1000 C and above.

  3. Texture Analyses of Ti/Al2O3 Nanocomposite Produced Using Friction Stir Processing

    NASA Astrophysics Data System (ADS)

    Shafiei-Zarghani, Aziz; Kashani-Bozorg, Seyed Farshid; Gerlich, Adrian P.

    2016-11-01

    The texture evolution of Ti/Al2O3 nanocomposite fabricated using friction stir processing (FSP) was investigated at both macroscopic and microscopic levels employing X-ray diffraction and electron backscattering diffraction techniques. The developed textures were compared with ideal shear textures of hexagonal close-packed (hcp) structure, revealing that the fabricated nanocomposite is dominated by the P 1 hcp (fiber { 10bar{1}1} < 1bar{2}10rangle (and relatively weak B (fiber { 10bar{1}1} < bar{1}bar{1}23rangle ) textures. The analyses of macro- and microtextures showed that the presence of nanosized Al2O3 particles activated the pyramidal { 10bar{1}1} < bar{1}bar{1}23rangle slip system in addition to dominant { 10bar{1}0} < 1bar{2}10rangle prism, basal { {0002} }< 1bar{2}10rangle, and pyramidal { 10bar{1}1} < 1bar{2}10rangle slip systems which normally govern plastic deformation during FSP of commercially pure titanium alloy. Moreover, the presence of nanoparticles promoted the occurrence of continuous dynamic recrystallization as well as increasing the fraction of high-angle grain boundaries within the developed microstructure.

  4. Separation of Fine Al2O3 Inclusion from Liquid Steel with Super Gravity

    NASA Astrophysics Data System (ADS)

    Li, Chong; Gao, Jintao; Wang, Zhe; Guo, Zhancheng

    2017-01-01

    An innovative approach of super gravity was proposed to separate fine Al2O3 inclusions from liquid steel in this study. To investigate the removal behaviors of inclusions, the effects of different gravity coefficients and time on separating the inclusions were studied. The results show that a large amount of Al2O3 inclusions gathered at the top of the sample obtained by super gravity, whereas there were almost no inclusions appearing at the bottom. The volume fraction and number density of inclusions presented a gradient distribution along the direction of the super gravity, which became steeper with increasing gravity coefficient and separating time. As a result of the collision between inclusions, a large amount of inclusions aggregated and grew during the moving process, which further decreased the removal time. The experimental required removal time of inclusions is close to the theoretical values calculated by Stokes law under gravity coefficient G ≤ 80, t ≤ 15 minutes, and the small deviation may be because the inclusion particles are not truly spherical. Under the condition of gravity coefficient G = 80, t = 15 minutes, the total oxygen content at the bottom of the sample (position of 5 cm) is only 8.4 ppm, and the removal rate is up to 95.6 pct compared with that under normal gravity.

  5. Cold-Sprayed Ni-Al2O3 Coatings for Applications in Power Generation Industry

    NASA Astrophysics Data System (ADS)

    Sevillano, F.; Poza, P.; Múnez, C. J.; Vezzù, S.; Rech, S.; Trentin, A.

    2013-06-01

    Cermets coatings are extensively used in energy applications both because of their high wear resistance as required, for example, in components like gas turbine sealants, and because of their specific functionality as required in solar absorbers. So far, high-temperature thermal spraying and physical vapor deposition have traditionally been used to deposit this kind of coatings. In this study, Ni-Al2O3 coatings have been deposited using a Kinetic®3000 cold-spray system starting from Ni and Al2O3 powders blend; five blends have been prepared setting the alumina content in the feedstock to 10, 25, 50, 75, and 90 wt.%. The embedded alumina ranges between a few percent weight up to 16 and 31 wt.%, while the microhardness shows a deep increase from 175 Vickers in the case of pure Ni coatings up to 338 Vickers. The spray and coating growth mechanism have been discussed, with special attention to the fragmentation of the ceramic particles during the impact. Finally, the coating behavior at high temperature was analyzed by oxidation tests performed in air at 520 °C emphasizing a good oxidation resistance that could represent a very promising basis for application in power generation systems.

  6. Crystalline gamma-Al2O3 physical vapour deposition-coating for steel thixoforging tools.

    PubMed

    Bobzin, K; Hirt, G; Bagcivan, N; Khizhnyakova, L; Ewering, M

    2011-10-01

    The process of thixoforming, which has been part of many researches during the last decades, combines the advantages of forging and casting for the shaping of metallic components. But due to the high temperatures of semi-solid steel alloys high demands on the tools are requested. To resists the thermal and mechanical loads (wear, friction, thermal and thermomechanical fatigue) protecting thin films are necessary. In this regard crystalline gamma-Al2O3 deposited via Physical Vapour Deposition (PVD) is a promising candidate: It exhibits high thermal stability, high oxidation resistance and high hot hardness. In the present work the application of a (Ti, Al)N/gamma-Al2O3 coating deposited by means of Magnetron Sputter Ion Plating in an industrial coating unit is presented. The coating was analysed by means of Rockwell test, nanoindentation, and Scanning Electron Microscopy (SEM). The coated tool was tested in thixoforging experiments with steel grade X210CrW12 (AlSI D6). The surface of the coated dies was examined with Scanning Electron Microscope (SEM) after 22, 42, 90 and 170 forging cycles.

  7. Al2O3 fiber strength degradation in metal and intermetallic matrix composites

    NASA Technical Reports Server (NTRS)

    Draper, S. L.; Locci, I. E.

    1994-01-01

    The mechanisms for fiber damage in single crystal Al2O3 fiber-reinforced composites were investigated. Both fiber fragmentation and fiber strength degradation were observed in composites with a variety of matrix compositions. Four mechanisms that may be contributing to the fiber strength loss have been proposed and include matrix reaction, reaction with binders, residual stress-induced damage, and pressure from hot pressing. The effect of matrix reaction was separated from the other three effects by sputter-coating the matrices on cleaned fibers and annealing with a temperature profile that simulates processing conditions. These experiments revealed that Y and Cr in FeCrAlY base alloys and Zr in NiAl alloys reacted with the fiber, and grooves and adherent particles were formed on the fiber surface which were responsible for the strength loss. The effects of the matrix reaction appeared to dominate over the other possible mechanisms, although evidence for reaction with binders was also found. Ridges on the fiber surface, which reflected the grain boundaries of the matrix, were also observed. In order for single-crystal Al2O3 to be used as a fiber in MMC's and IMC's, a matrix or protective coating which minimizes matrix reaction during processing will be necessary. Of the matrices investigated, the Thermo-span(sup TM) alloy was the least damaging to fiber properties.

  8. Tribological performance of Graphene/Carbon nanotube hybrid reinforced Al2O3 composites

    PubMed Central

    Yazdani, Bahareh; Xu, Fang; Ahmad, Iftikhar; Hou, Xianghui; Xia, Yongde; Zhu, Yanqiu

    2015-01-01

    Tribological performance of the hot-pressed pure Al2O3 and its composites containing various hybrid contents of graphene nanoplatelets (GNPs) and carbon nanotubes (CNTs) were investigated under different loading conditions using the ball-on-disc method. Benchmarked against the pure Al2O3, the composite reinforced with a 0.5 wt% GNP exhibited a 23% reduction in the friction coefficient along with a promising 70% wear rate reduction, and a hybrid reinforcement consisting of 0.3 wt.% GNPs + 1 wt.% CNTs resulted in even better performance, with a 86% reduction in the wear rate. The extent of damage to the reinforcement phases caused during wear was studied using Raman spectroscopy. The wear mechanisms for the composites were analysed based on the mechanical properties, brittleness index and microstructural characterizations. The excellent coordination between GNPs and CNTs contributed to the excellent wear resistance property in the hybrid GNT-reinforced composites. GNPs