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Sample records for algaas barrier layer

  1. Effects of surface barrier layer in AlGaAs/GaAs solar cells

    NASA Astrophysics Data System (ADS)

    Urabe, Hiroyuki; Kuramoto, Makoto; Nakano, Tomohiro; Kawaharazuka, Atsushi; Makimoto, Toshiki; Horikoshi, Yoshiji

    2015-09-01

    In this paper, we report the effects of surface barrier layers on the characteristics of AlGaAs/GaAs solar cells. The external quantum efficiency (EQE) spectra for AlGaAs barrier samples with different barrier layer AlAs fractions and thickness of the surface barrier layer were measured to increase the solar cell efficiency. The results show that the surface barrier layer is effective to block diffusing photoexcited electrons to the surface while the thicker barrier layer absorbs higher energy photons to generate carriers which recombine at the surface. The optimal surface barrier structure is a 50 nm thick Al0.7Ga0.3As.

  2. GaAs/AlGaAs quantum wells with indirect-gap AlGaAs barriers for solar cell applications

    SciTech Connect

    Noda, T. Otto, L. M.; Elborg, M.; Jo, M.; Mano, T.; Kawazu, T.; Han, L.; Sakaki, H.

    2014-03-24

    We have fabricated GaAs/AlGaAs quantum well (QW) solar cells in which 3 nm-thick QWs and indirect-gap Al{sub 0.78}Ga{sub 0.22}As barriers are embedded, and we studied extraction processes of photogenerated carriers in this QW system. The photocurrent under 700 nm light illumination at voltages close to the open-circuit voltage shows only a small reduction, indicating that the carrier recombination inside QWs is largely suppressed. We attribute this result to an efficient extraction of electrons from the QWs through the X-valley of AlGaAs. The insertion of QWs is shown to be effective in extending the absorption wavelengths and in enhancing the photocurrent. The use of indirect-gap materials as barriers is found to enhance carrier extraction processes, and result in an improved performance of QW solar cells.

  3. Theoretical Study of the Effect of an AlGaAs Double Heterostructure on Metal-Semiconductor-Metal Photodetector Performance

    NASA Technical Reports Server (NTRS)

    Salem, Ali F.; Smith, Arlynn W.; Brennan, Kevin F.

    1994-01-01

    The impulse and square-wave input response of different GaAs metal-semiconductor-metal photodetector (MSM) designs are theoretically examined using a two dimensional drift- diffusion numerical calculation with a thermionic-field emission boundary condition model for the heterojunctions. The rise time and the fall time of the output signal current are calculated for a simple GaAs, epitaxially grown, MSM device as well as for various double-heterostructure barrier devices. The double heterostructure devices consist of an AlGaAs layer sandwiched between the top GaAs active, absorption layer and the bottom GaAs substrate. The effect of the depth of the AlGaAs layer on the speed and responsivity of the MSM devices is examined. It is found that there is an optimal depth, at fixed applied bias, of the AlGaAs layer within the structure that provides maximum responsivity at minimal compromise in speed.

  4. Multi-layer waste containment barrier

    SciTech Connect

    Smith, Ann Marie; Gardner, Bradley M.; Nickelson, David F.

    1999-01-01

    An apparatus for constructing an underground containment barrier for containing an in-situ portion of earth. The apparatus includes an excavating device for simultaneously (i) excavating earthen material from beside the in-situ portion of earth without removing the in-situ portion and thereby forming an open side trench defined by opposing earthen sidewalls, and (ii) excavating earthen material from beneath the in-situ portion of earth without removing the in-situ portion and thereby forming a generally horizontal underground trench beneath the in-situ portion defined by opposing earthen sidewalls. The apparatus further includes a barrier-forming device attached to the excavating device for simultaneously forming a side barrier within the open trench and a generally horizontal, multi-layer barrier within the generally horizontal trench. The multi-layer barrier includes at least a first layer and a second layer.

  5. Method for forming a barrier layer

    DOEpatents

    Weihs, Timothy P.; Barbee, Jr., Troy W.

    2002-01-01

    Cubic or metastable cubic refractory metal carbides act as barrier layers to isolate, adhere, and passivate copper in semiconductor fabrication. One or more barrier layers of the metal carbide are deposited in conjunction with copper metallizations to form a multilayer characterized by a cubic crystal structure with a strong (100) texture. Suitable barrier layer materials include refractory transition metal carbides such as vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (Cr.sub.3 C.sub.2), tungsten carbide (WC), and molybdenum carbide (MoC).

  6. Enhanced Densification of SDC Barrier Layers

    SciTech Connect

    Hardy, John S.; Templeton, Jared W.; Lu, Zigui; Stevenson, Jeffry W.

    2011-09-12

    This technical report explores the Enhanced Densification of SCD Barrier Layers A samaria-doped ceria (SDC) barrier layer separates the lanthanum strontium cobalt ferrite (LSCF) cathode from the yttria-stabilized zirconia (YSZ) electrolyte in a solid oxide fuel cell (SOFC) to prevent the formation of electrically resistive interfacial SrZrO{sub 3} layers that arise from the reaction of Sr from the LSCF with Zr from the YSZ. However, the sintering temperature of this SDC layer must be limited to {approx}1200 C to avoid extensive interdiffusion between SDC and YSZ to form a resistive CeO{sub 2}-ZrO{sub 2} solid solution. Therefore, the conventional SDC layer is often porous and therefore not as impervious to Sr-diffusion as would be desired. In the pursuit of improved SOFC performance, efforts have been directed toward increasing the density of the SDC barrier layer without increasing the sintering temperature. The density of the SDC barrier layer can be greatly increased through small amounts of Cu-doping of the SDC powder together with increased solids loading and use of an appropriate binder system in the screen print ink. However, the resulting performance of cells with these barrier layers did not exhibit the expected increase in accordance with that achieved with the prototypical PLD SDC layer. It was determined by XRD that increased sinterability of the SDC also results in increased interdiffusivity between the SDC and YSZ, resulting in formation of a highly resistive solid solution.

  7. Identification of photoluminescence bands in AlGaAs/InGaAs/GaAs PHEMT heterostructures with donor-acceptor-doped barriers

    SciTech Connect

    Gulyaev, D. V. Zhuravlev, K. S.; Bakarov, A. K.; Toropov, A. I.

    2015-02-15

    The photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistor heterostructures with donor-acceptor-doped AlGaAs barriers is studied. It is found that the introduction of additional p{sup +}-doped AlGaAs layers into the design brings about the appearance of new bands in the photoluminescence spectra. These bands are identified as resulting from transitions (i) in donor-acceptor pairs in doped AlGaAs layers and (ii) between the conduction subband and acceptor levels in the undoped InGaAs quantum well.

  8. Efficient spin injection through a crystalline AlOx tunnel barrier prepared by the oxidation of an ultra-thin Al epitaxial layer on GaAs

    NASA Astrophysics Data System (ADS)

    Nishizawa, N.; Munekata, H.

    2013-07-01

    We report that an ultra-thin, post-oxidized aluminum epilayer grown on the AlGaAs surface works as a high-quality tunnel barrier for spin injection from a ferromagnetic metal to a semiconductor. One of the key points of the present oxidation method is the formation of the crystalline AlOx template layer without oxidizing the AlGaAs region near the Al/AlGaAs interface. The oxidized Al layer is not amorphous but show well-defined single crystalline feature reminiscent of the spinel γ-AlOx phase. A spin-light emitting diode consisting of a Fe layer, a crystalline AlOx barrier layer, and an AlGaAs-InGaAs double hetero-structure has exhibited circularly polarized electroluminescence with circular polarization of PEL ˜ 0.145 at the remnant magnetization state of the Fe layer, indicating the relatively high spin injection efficiency (≡2PEL/PFe) of 0.63.

  9. Alternating-Composition Layered Ceramic Barrier Coatings

    NASA Technical Reports Server (NTRS)

    Miller, Robert A.; Zhu, Dongming

    2008-01-01

    Ceramic thermal and environmental barrier coatings (T/EBCs) that contain multiple layers of alternating chemical composition have been developed as improved means of protecting underlying components of gas-turbine and other heat engines against both corrosive combustion gases and high temperatures.

  10. Development of N/P AlGaAs free-standing top solar cells for tandem applications

    NASA Technical Reports Server (NTRS)

    Negley, Gerald H.; Dinetta, Louis C.; Cummings, John R.; Hannon, Margaret H.; Sims, Paul E.; Barnett, Allen M.

    1991-01-01

    The combination of a free standing AlGaAs top solar cell and an existing bottom solar cell is the highest performance, lowest risk approach to implementing the tandem cell concept. The solar cell consists of an AlGaAs substrate layer, an AlGaAs base layer, an AlGaAs emitter, and an ultra-thin AlGaAs window layer. The window layer is compositionally graded which minimizes reflection at the window layer/emitter interface and creates a built-in electric field to improve quantum response in the blue region of the spectrum. Liquid phase epitaxy (LPE) is the only viable method to produce this free standing top solar cell. Small (0.125 sq cm), transparent p/n AlGaAs top solar cells were demonstrated with optimum bandgap for combination with a silicon bottom solar cell. The efficiency of an AlGaAs/Si stack using the free standing AlGaAs device upon an existing silicon bottom solar cell is 24 pct. (1X, Air Mass Zero (AM0). The n/p AlGaAs top solar cell is being developed in order to facilitate the wiring configuration. The two terminal tandem stack will retain fit, form, and function of existing silicon solar cells. Progress in the development of large area (8 and 16 sq cm), free standing AlGaAs top solar cells is discussed.

  11. Composite layers for barrier coatings on polymers

    NASA Astrophysics Data System (ADS)

    Brochhagen, Markus; Vorkoetter, Christoph; Boeke, Marc; Benedikt, Jan

    2016-09-01

    Amorphous hydrogenated carbon (a-C:H), amorphous hydrogenated silicon (a-Si:H), and SiO2 thin films are of high interest because they can serve as a gas barrier on polymers. To understand how the coating changes the overall barrier properties of the thin film-polymer system, optical, mechanical, and barrier properties have to be studied. One of the important characteristic of such coatings is their compressive stress, which has beneficial as well as unwanted effects. The stress can cause deformation of the bulk material or de-lamination of the film. The mechanical stability can be improved and it is possible to reduce cracking due to elongation, as the compressive stress can compensate externally applied tensile strain. Stress and mechanical properties of composite layers can be manipulated directly by embedding nanoparticles in an amorphous matrix film. Therefore nanoparticles and amorphous layers are investigated before they can be assembled in a composite layer. Growth rates as well as optical and mechanical properties are explored in this work. An inductively coupled plasma source was used for all amorphous layers and the silicon nanoparticles with diameter around 5 nm were produced in a capacitively coupled plasma reactor. This work is supported by DFG within SFB-TR87.

  12. Selective oxidation of buried AlGaAs for fabrication of vertical-cavity lasers

    SciTech Connect

    Choquette, K.D.; Geib, K.M.; Chui, H.C.; Hou, H.Q.; Hull, R.

    1996-06-01

    The authors discuss the selective conversion of buried layers of AlGaAs to a stable oxide and the implementation of this oxide into high performance vertical-cavity surface emitting lasers (VCSELs). The rate of lateral oxidation is shown to be linear with an Arrhenius temperature dependence. The measured activation energies vary with Al composition, providing a high degree of oxidation selectivity between AlGaAs alloys. Thus buried oxide layers can be selectively fabricated within the VCSEL through small compositional variations in the AlGaAs layers. The oxidation of AlGaAs alloys, as opposed to AlAs, is found to provide robust processing of reliable lasers. The insulating and low refractive index oxide provides enhanced electrical and optical confinement for ultralow threshold currents in oxide-apertured VCSELs.

  13. Barrier layers as resonators on deep centers

    NASA Astrophysics Data System (ADS)

    Oreshkin, P. T.

    1990-11-01

    A response is given to the paper of L. S. Barman and A. A. Lebedev (Izv. Vyssh. Uchebn. Zaved. SSSR, Fiz., No. 12, 88 90 (1989)), and it is shown that the arguments given there are not satisfactory. New experimental data have been obtained for n+-p junctions in Si, where square reverse-bias pulses U < Ures are observed to shift the DLTS peaks. Here Ures is the magnitude of the pulse for which all activation-drift processes become activation-transit processes and the barrier layer operates as a freshly prepared resonator on deep centers (see the paper by P. T. Oreshkin, Elektronnaya Tekhnika, Ser. 3, Mikroelektronika, No. 4 (128), 12 20 (1988).

  14. Method of Making Self-Aligned GAAS/ALGAAS FET’s.

    DTIC Science & Technology

    having a predetermined crystalline structure is obtained having a heavily doped top GaAs layer, having a heavily doped AlGaAs layer under the top layer...recess is wider at the base of the recess than at the top of the recess because of the predetermined crystalline structure and the orientation-dependent

  15. Multilayer article having stabilized zirconia outer layer and chemical barrier layer

    NASA Technical Reports Server (NTRS)

    Lee, Kang N. (Inventor); Bansal, Narottam P. (Inventor)

    2004-01-01

    A multilayer article includes a substrate that includes at least one of a ceramic compound and a Si-containing metal alloy. An outer layer includes stabilized zirconia. Intermediate layers are located between the outer layer and the substrate and include a mullite-containing layer and a chemical barrier layer. The mullite-containing layer includes 1) mullite or 2) mullite and an alkaline earth metal aluminosilicate. The chemical barrier layer is located between the mullite-containing layer and the outer layer. The chemical barrier layer includes at least one of mullite, hafnia, hafnium silicate and rare earth silicate (e.g., at least one of RE.sub.2 SiO.sub.5 and RE.sub.2 Si.sub.2 O.sub.7 where RE is Sc or Yb). The multilayer article is characterized by the combination of the chemical barrier layer and by its lack of a layer consisting essentially of barium strontium aluminosilicate between the mullite-containing layer and the chemical barrier layer. Such a barium strontium aluminosilicate layer may undesirably lead to the formation of a low melting glass or unnecessarily increase the layer thickness with concomitant reduced durability of the multilayer article. In particular, the chemical barrier layer may include at least one of hafnia, hafnium silicate and rare earth silicate.

  16. Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

    DOEpatents

    Carlson, David E.

    1980-01-01

    Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

  17. Capillary barrier effect from underlying coarser soil layer

    SciTech Connect

    Stormont, J.C.; Anderson, C.E.

    1999-08-01

    Infiltration tests were conducted on soil columns of silty sand over pea gravel, concrete sand over pea gravel, and silty sand over concrete sand to investigate the capillary barrier effect of an underlying coarser soil layer. Water movement across the interface occurred when the suction head at the interface reached the breakthrough head of the coarser lower soil layer, defined as the suction head at which the coarser layer first became conductive, regardless of infiltration rate or the properties of the overlying finer soil layer. Thus, the coarser lower soil layer controlled breakthrough in this study. After infiltration was terminated, the suction head near the interface increased above the breakthrough head and the barrier was restored. The breakthrough head did not change substantially after eight test cycles of breakthrough and restoration for a capillary barrier with a pea gravel as the coarser lower soil layer. The barrier formed with the concrete sand as the coarser layer permitted breakthrough at a greater suction head than did the barrier with the pea gravel, indicating that the more uniform and coarse the lower soil layer is, the more effective the capillary barrier.

  18. Ocean barrier layers' effect on tropical cyclone intensification.

    PubMed

    Balaguru, Karthik; Chang, Ping; Saravanan, R; Leung, L Ruby; Xu, Zhao; Li, Mingkui; Hsieh, Jen-Shan

    2012-09-04

    Improving a tropical cyclone's forecast and mitigating its destructive potential requires knowledge of various environmental factors that influence the cyclone's path and intensity. Herein, using a combination of observations and model simulations, we systematically demonstrate that tropical cyclone intensification is significantly affected by salinity-induced barrier layers, which are "quasi-permanent" features in the upper tropical oceans. When tropical cyclones pass over regions with barrier layers, the increased stratification and stability within the layer reduce storm-induced vertical mixing and sea surface temperature cooling. This causes an increase in enthalpy flux from the ocean to the atmosphere and, consequently, an intensification of tropical cyclones. On average, the tropical cyclone intensification rate is nearly 50% higher over regions with barrier layers, compared to regions without. Our finding, which underscores the importance of observing not only the upper-ocean thermal structure but also the salinity structure in deep tropical barrier layer regions, may be a key to more skillful predictions of tropical cyclone intensities through improved ocean state estimates and simulations of barrier layer processes. As the hydrological cycle responds to global warming, any associated changes in the barrier layer distribution must be considered in projecting future tropical cyclone activity.

  19. Silicon based substrate with calcium aluminosilicate/thermal barrier layer

    NASA Technical Reports Server (NTRS)

    Eaton, Jr., Harry Edwin (Inventor); Allen, William Patrick (Inventor); Miller, Robert Alden (Inventor); Jacobson, Nathan S. (Inventor); Smialek, James L. (Inventor); Opila, Elizabeth J. (Inventor); Lee, Kang N. (Inventor); Nagaraj, Bangalore A. (Inventor); Wang, Hongyu (Inventor); Meschter, Peter Joel (Inventor)

    2001-01-01

    A barrier layer for a silicon containing substrate which inhibits the formation of gaseous species of silicon when exposed to a high temperature aqueous environment comprises a calcium alumino silicate.

  20. Silicon based substrate with environmental/ thermal barrier layer

    NASA Technical Reports Server (NTRS)

    Eaton, Jr., Harry Edwin (Inventor); Allen, William Patrick (Inventor); Jacobson, Nathan S. (Inventor); Bansal, Nanottam P. (Inventor); Opila, Elizabeth J. (Inventor); Smialek, James L. (Inventor); Lee, Kang N. (Inventor); Spitsberg, Irene T. (Inventor); Wang, Hongyu (Inventor); Meschter, Peter Joel (Inventor)

    2002-01-01

    A barrier layer for a silicon containing substrate which inhibits the formation of gaseous species of silicon when exposed to a high temperature aqueous environment comprises a barium-strontium alumino silicate.

  1. Selective thermal terahertz emission from GaAs and AlGaAs

    SciTech Connect

    Požela, K. Širmulis, E.; Kašalynas, I.; Šilėnas, A.; Požela, J.; Jucienė, V.

    2014-09-01

    The selective thermally stimulated terahertz (THz) radiation emission from GaAs and AlGaAs alloys are experimentally observed at frequencies of coupled oscillations of free electron plasma and different branches of interface AlGaAs optical phonons. The effect of strong absorption of incident radiation with large oblique angle (26°) by heated GaAs and AlGaAs is revealed. The coherent THz radiation emission with the frequency of 7.6 THz from the heated high conductivity GaAs (n = 4 × 10{sup 18 }cm{sup −3}) layer is observed. The results are highly relevant to application in optoelectronic THz devices.

  2. Two-layer thermal barrier coating for high temperature components

    NASA Technical Reports Server (NTRS)

    Stecura, S.

    1977-01-01

    A simple two-layer plasma-sprayed thermal barrier coating system was developed which has the potential for protecting high temperature air-cooled gas turbine components. Of the initially examined coatings, the most promising system is an Ni-16Cr-6Al-0.6Y (in wt%) bond coating (about 0.005 to 0.010 cm thick) and a ZrO2-12Y2O3 (in wt%) thermal barrier coating (about 0.025 to 0.064 cm thick). This thermal barrier substantially lowered the metal temperature of the air-cooled airfoil. The coating withstood 3200 cycles (80 s at 1280 C surface temperature) and 275 cycles (1 hr at 1490 C surface temperature) without cracking or spalling. No separation of the thermal barrier from the bond coating or the bond coating from the substrate was observed.

  3. Growth and photoluminescence characteristics of AlGaAs nanowires

    NASA Astrophysics Data System (ADS)

    Wu, Z. H.; Sun, M.; Mei, X. Y.; Ruda, H. E.

    2004-07-01

    Growth of high-quality single-crystal AlGaAs nanowires was demonstrated using the vapor-liquid-solid (VLS) mechanism with molecular-beam epitaxy (MBE). Highly ordered AlGaAs nanowire arrays and GaAs /AlGaAs multilayer nanowires were also prepared. Photoluminescence (PL) from homogeneous AlGaAs and GaAs /AlGaAs multilayer nanowires was measured. The Al composition of the AlGaAs nanowires was found to be significantly lower than that for planar MBE films grown under the same conditions, as determined from PL and energy-dispersive x-ray spectroscopy measurements. This is explained in terms of the different growth mechanisms for VLS and normal MBE. Such AlGaAs nanowires are expected to have a wide range of applications in electronic and photonic devices.

  4. Super Gas Barrier Thin Films via Layer-by-Layer Assembly of Polyelectrolytes and Clay

    NASA Astrophysics Data System (ADS)

    Priolo, Morgan; Gamboa, Daniel; Grunlan, Jaime

    2010-03-01

    Thin composite films of branched polyethylenimine (PEI), polyacrylic acid (PAA) and sodium montmorillonite clay (MMT) platelets were prepared using layer-by-layer assembly. Film thickness, mass deposited per layer, and barrier were shown to increase exponentially with the number of deposition cycles. After 32 layers (i.e., eight PEI/PAA/PEI/MMT quadlayers) are deposited, the resulting transparent film exhibits an oxygen transmission rate below the detection limit of commercial instrumentation (< 0.005 cm^3/m^2 . day). This level of oxygen barrier is believed to be due to a nano-brick wall microstructure comprised of exfoliated clay bricks in polymeric mortar, where the enhanced spacing between MMT layers, provided by PEI and PAA, creates channels perpendicular concentration gradient that delay the permeating molecule. These films are good candidates for flexible electronics, food, and pharmaceutical packaging due to their transparency, super gas barrier (that rivals SiOx) and lack of metal.

  5. Effects of plasma spray parameters on two layer thermal barrier

    NASA Technical Reports Server (NTRS)

    Stecura, S.

    1981-01-01

    The power level and the type of arc gas used during plasma spraying of a two layer thermal barrier system (TBS) were found to affect the life of the system. Life at 1095 C in a cyclic furnace test was improved by about 140 percent by increasing the power during plasma spray applications of the bond and thermal barrier coatings. This improvement is due to increases in the densities of the bond and thermal barrier coatings by 3 and 5 percent, respectively. These increases in densities are equivalent to about 45 and 30 percent reduction in mean porosities, respectively. The addition of hydrogen to the argon arc gas had the same effect as the reduction in power level and caused a reduction in TBS life.

  6. Multilayer barrier films comprising nitrogen spacers between free-standing barrier layers

    NASA Astrophysics Data System (ADS)

    Granstrom, Jimmy Erik

    The air sensitivity of organic electronic devices has delayed the broad commercialization of the printed "plastics" electronics technology. The vacuum deposition methods used to fabricate multi-layers which fulfill the encapsulation requirements for plastic electronic devices are complex and expensive. Fully printed "plastic" electronics requires the development of encapsulation architectures which comprise solution deposited barriers and/or low-cost free-standing barrier films based on polymers, e.g. poly ethylene terephthalate (PET). One way to reach this goal is the insertion of contaminant-free (e.g. pure N2) gas-phase spacers between free-standing barrier films in a multilayer structure. The spacers themselves do not exhibit any barrier properties (diffusion of gas permeants in a gas phase is orders of magnitude faster than in a solid), but they delay the attainment of steady state. The spacer also reduces the chemical potential gradient across downstream barrier layers during the transient regime, reducing permeation rate to the device. Furthermore, if sorption is not fully equilibrated and introduces a kinetic barrier to transport, the additional sorption and desorption steps needed for permeant to reach the device may also slow the steady-state permeation rate. Encapsulation architectures utilizing both single-matrix (without nitrogen spacers) and multiple-matrix structures (with nitrogen spacers) were fabricated in this study, including Russian Doll structures utilizing pairs of free-standing barrier films and epoxy seals separated by nitrogen spacers. This structure enables the use of low-cost epoxy to attach two or more free-standing barrier films to a substrate with improved barrier performance. The performance of various Russian Doll encapsulations was evaluated with the calcium thin film optical transmission test, showing improved performance of the Russian doll configuration relative to a non-nested barrier/spacer architecture, and demonstrating that

  7. The stratum corneum comprises three layers with distinct metal-ion barrier properties

    PubMed Central

    Kubo, Akiharu; Ishizaki, Itsuko; Kubo, Akiko; Kawasaki, Hiroshi; Nagao, Keisuke; Ohashi, Yoshiharu; Amagai, Masayuki

    2013-01-01

    The stratum corneum (SC), the outermost barrier of mammalian bodies, consists of layers of cornified keratinocytes with intercellular spaces sealed with lipids. The insolubility of the SC has hampered in-depth analysis, and the SC has been considered a homogeneous barrier. Here, we applied time-of-flight secondary ion mass spectrometry to demonstrate that the SC consists of three layers with distinct properties. Arginine, a major component of filaggrin-derived natural moisturizing factors, was concentrated in the middle layer, suggesting that this layer functions in skin hydration. Topical application of metal ions revealed that the outer layer allowed their passive influx and efflux, while the middle and lower layers exhibited distinct barrier properties, depending on the metal tested. Notably, filaggrin deficiency abrogated the lower layer barrier, allowing specific metal ions to permeate viable layers. These findings elucidate the multi-layered barrier function of the SC and its defects in filaggrin-deficient atopic disease patients. PMID:23615774

  8. Formation Mechanism of Barrier Layer in the Subtropical Pacific

    NASA Astrophysics Data System (ADS)

    Katsura, S.; Oka, E.; Sato, K.

    2014-12-01

    Formation mechanism of barrier layers (BLs) in the subtropical Pacific was investigated by using Argo profiling float data and shipboard hydrographic section data. In this region, BLs were formed mainly in winter in association with the sea surface salinity (SSS) front, which was located on the equator side of the SSS maximum region. While BLs from gridded Argo data were broadly distributed, their distribution from raw Argo profiles was patchy and their temporal scale was shorter than 10 days. Formation mechanism of BLs was attributed to two processes: freshening near the sea surface and salinification in the subsurface. As for the former process, poleward Ekman advection of fresher water from the tropics across the SSS front was dominant, while the effect of precipitation was small. As for the latter process, inflow of high salinity water into mixed layers associated with the SSS front can contribute to the BL formation, but actually the core of subducted Tropical Water was too deep to affect salinity structure in the mixed layers across the seasonal thermocline. These features strongly suggest that tilting of the SSS front is essentially important for the BL formation in the subtropical Pacific. This tilting process can only occur where the contribution of horizontal SSS gradient to the horizontal density gradient is strong, and explains why spatial distribution of BLs corresponded to the SSS front. Seasonal variation of BLs corresponded well to that of mixed layer depth, indicating that the deeper mixed layers are before the BL formation, the thicker BLs are formed when the SSS front is tilted.

  9. Role of barrier layer on dielectric function of graphene double layer system at finite temperature

    NASA Astrophysics Data System (ADS)

    Patel, Digish K.; Ambavale, Sagar K.; Prajapati, Ketan; Sharma, A. C.

    2016-05-01

    We have theoretically investigated the static dielectric function of graphene double layer system (GDLS) at finite temperatures within the random phase approximation. GDLS has been suspended on a substrate and barrier layer of three different materials; h-BN, Al2O3 and HfO2 has been introduced between two graphene sheets of GDLS. We have reported dependence of the overall dielectric function of GDLS on interlayer distance and the effect of the dielectric environment at finite temperatures. Results show close relation between changing environment and behavior of dielectric constant of GDLS.

  10. Barrier layer for a MCrAlY basecoat superalloy combination

    DOEpatents

    Sabol, Stephen M.; Goedjen, John G.; Vance, Steven J.

    2001-01-01

    A turbine component contains a substrate (22) such as a superalloy, a basecoat (24) of the type MCrAlY, and a continuous barrier layer (28) between the substrate and basecoat, where the barrier layer (28) is made of an alloy of (Re, Ta, Ru, Os)X, where X can be Ni, Co or their mixture, where the barrier layer is at least 2 micrometers thick and substantially prevents materials from both the basecoat and substrate from migrating through it.

  11. Effect of an Opaque Reflecting Layer on the Thermal Behavior of a Thermal Barrier Coating

    NASA Technical Reports Server (NTRS)

    Spuckler, Charles M.

    2007-01-01

    A parametric study using a two-flux approximation of the radiative transfer equation was performed to examine the effects of an opaque reflective layer on the thermal behavior of a typical semitransparent thermal barrier coating on an opaque substrate. Some ceramic materials are semitransparent in the wavelength ranges where thermal radiation is important. Even with an opaque layer on each side of the semitransparent thermal barrier coating, scattering and absorption can have an effect on the heat transfer. In this work, a thermal barrier coating that is semitransparent up to a wavelength of 5 micrometers is considered. Above 5 micrometers wavelength, the thermal barrier coating is opaque. The absorption and scattering coefficient of the thermal barrier was varied. The thermal behavior of the thermal barrier coating with an opaque reflective layer is compared to a thermal barrier coating without the reflective layer. For a thicker thermal barrier coating with lower convective loading, which would be typical of a combustor liner, a reflective layer can significantly decrease the temperature in the thermal barrier coating and substrate if the scattering is weak or moderate and for strong scattering if the absorption is large. The layer without the reflective coating can be about as effective as the layer with the reflective coating if the absorption is small and the scattering strong. For low absorption, some temperatures in the thermal barrier coating system can be slightly higher with the reflective layer. For a thin thermal barrier coating with high convective loading, which would be typical of a blade or vane that sees the hot sections of the combustor, the reflective layer is not as effective. The reflective layer reduces the surface temperature of the reflective layer for all conditions considered. For weak and moderate scattering, the temperature of the TBC-substrate interface is reduced but for strong scattering, the temperature of the substrate is increased

  12. Tunable staged release of therapeutics from layer-by-layer coatings with clay interlayer barrier.

    PubMed

    Min, Jouha; Braatz, Richard D; Hammond, Paula T

    2014-03-01

    In developing new generations of coatings for medical devices and tissue engineering scaffolds, there is a need for thin coatings that provide controlled sequential release of multiple therapeutics while providing a tunable approach to time dependence and the potential for sequential or staged release. Herein, we demonstrate the ability to develop a self-assembled, polymer-based conformal coating, built by using a water-based layer-by-layer (LbL) approach, as a dual-purpose biomimetic implant surface that provides staggered and/or sustained release of an antibiotic followed by active growth factor for orthopedic implant applications. This multilayered coating consists of two parts: a base osteoinductive component containing bone morphogenetic protein-2 (rhBMP-2) beneath an antibacterial component containing gentamicin (GS). For the fabrication of truly stratified composite films with the customized release behavior, we present a new strategy-implementation of laponite clay barriers-that allows for a physical separation of the two components by controlling interlayer diffusion. The clay barriers in a single-component GS system effectively block diffusion-based release, leading to approximately 50% reduction in bolus doses and 10-fold increase in the release timescale. In a dual-therapeutic composite coating, the top GS component itself was found to be an effective physical barrier for the underlying rhBMP-2, leading to an order of magnitude increase in the release timescale compared to the single-component rhBMP-2 system. The introduction of a laponite interlayer barrier further enhanced the temporal separation between release of the two drugs, resulting in a more physiologically appropriate dosing of rhBMP-2. Both therapeutics released from the composite coating retained their efficacy over their established release timeframes. This new platform for multi-drug localized delivery can be easily fabricated, tuned, and translated to a variety of implant applications

  13. Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers.

    PubMed

    Andringa, Anne-Marije; Perrotta, Alberto; de Peuter, Koen; Knoops, Harm C M; Kessels, Wilhelmus M M; Creatore, Mariadriana

    2015-10-14

    Encapsulation of organic (opto-)electronic devices, such as organic light-emitting diodes (OLEDs), photovoltaic cells, and field-effect transistors, is required to minimize device degradation induced by moisture and oxygen ingress. SiNx moisture permeation barriers have been fabricated using a very recently developed low-temperature plasma-assisted atomic layer deposition (ALD) approach, consisting of half-reactions of the substrate with the precursor SiH2(NH(t)Bu)2 and with N2-fed plasma. The deposited films have been characterized in terms of their refractive index and chemical composition by spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS), and Fourier-transform infrared spectroscopy (FTIR). The SiNx thin-film refractive index ranges from 1.80 to 1.90 for films deposited at 80 °C up to 200 °C, respectively, and the C, O, and H impurity levels decrease when the deposition temperature increases. The relative open porosity content of the layers has been studied by means of multisolvent ellipsometric porosimetry (EP), adopting three solvents with different kinetic diameters: water (∼0.3 nm), ethanol (∼0.4 nm), and toluene (∼0.6 nm). Irrespective of the deposition temperature, and hence the impurity content in the SiNx films, no uptake of any adsorptive has been observed, pointing to the absence of open pores larger than 0.3 nm in diameter. Instead, multilayer development has been observed, leading to type II isotherms that, according to the IUPAC classification, are characteristic of nonporous layers. The calcium test has been performed in a climate chamber at 20 °C and 50% relative humidity to determine the intrinsic water vapor transmission rate (WVTR) of SiNx barriers deposited at 120 °C. Intrinsic WVTR values in the range of 10(-6) g/m2/day indicate excellent barrier properties for ALD SiNx layers as thin as 10 nm, competing with that of state-of-the-art plasma-enhanced chemical vapor-deposited SiNx layers of a few hundred

  14. Recent Advances in Gas Barrier Thin Films via Layer-by-Layer Assembly of Polymers and Platelets.

    PubMed

    Priolo, Morgan A; Holder, Kevin M; Guin, Tyler; Grunlan, Jaime C

    2015-05-01

    Layer-by-layer (LbL) assembly has emerged as the leading non-vacuum technology for the fabrication of transparent, super gas barrier films. The super gas barrier performance of LbL deposited films has been demonstrated in numerous studies, with a variety of polyelectrolytes, to rival that of metal and metal oxide-based barrier films. This Feature Article is a mini-review of LbL-based multilayer thin films with a 'nanobrick wall' microstructure comprising polymeric mortar and nano-platelet bricks that impart high gas barrier to otherwise permeable polymer substrates. These transparent, water-based thin films exhibit oxygen transmission rates below 5 × 10(-3) cm(3) m(-2) day(-1) atm(-1) and lower permeability than any other barrier material reported. In an effort to put this technology in the proper context, incumbent technologies such as metallized plastics, metal oxides, and flake-filled polymers are briefly reviewed.

  15. THz laser based on quasi-periodic AlGaAs superlattices

    SciTech Connect

    Malyshev, K V

    2013-06-30

    The use of quasi-periodic AlGaAs superlattices as an active element of a quantum cascade laser of terahertz range is proposed and theoretically investigated. A multi-colour emission, having from three to six peaks of optical gain, is found in Fibonacci, Thue-Morse, and figurate superlattices in electric fields of intensity F = 11 - 13 kV cm{sup -1} in the frequency range f = 2 - 4 THz. The peaks depend linearly on the electric field, retain the height of 20 cm{sup -1}, and strongly depend on the thickness of the AlGaAs-layers. (lasers)

  16. Low resistance barrier layer for isolating, adhering, and passivating copper metal in semiconductor fabrication

    DOEpatents

    Weihs, Timothy P.; Barbee, Jr., Troy W.

    2002-01-01

    Cubic or metastable cubic refractory metal carbides act as barrier layers to isolate, adhere, and passivate copper in semiconductor fabrication. One or more barrier layers of the metal carbide are deposited in conjunction with copper metallizations to form a multilayer characterized by a cubic crystal structure with a strong (100) texture. Suitable barrier layer materials include refractory transition metal carbides such as vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (Cr.sub.3 C.sub.2), tungsten carbide (WC), and molybdenum carbide (MoC).

  17. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer

    DOEpatents

    Chavarkar, Prashant; Smorchkova, Ioulia P.; Keller, Stacia; Mishra, Umesh; Walukiewicz, Wladyslaw; Wu, Yifeng

    2005-02-01

    A Group III nitride based high electron mobility transistors (HEMT) is disclosed that provides improved high frequency performance. One embodiment of the HEMT comprises a GaN buffer layer, with an Al.sub.y Ga.sub.1-y N (y=1 or y 1) layer on the GaN buffer layer. An Al.sub.x Ga.sub.1-x N (0.ltoreq.x.ltoreq.0.5) barrier layer on to the Al.sub.y Ga.sub.1-y N layer, opposite the GaN buffer layer, Al.sub.y Ga.sub.1-y N layer having a higher Al concentration than that of the Al.sub.x Ga.sub.1-x N barrier layer. A preferred Al.sub.y Ga.sub.1-y N layer has y=1 or y.about.1 and a preferred Al.sub.x Ga.sub.1-x N barrier layer has 0.ltoreq.x.ltoreq.0.5. A 2DEG forms at the interface between the GaN buffer layer and the Al.sub.y Ga.sub.1-y N layer. Respective source, drain and gate contacts are formed on the Al.sub.x Ga.sub.1-x N barrier layer. The HEMT can also comprising a substrate adjacent to the buffer layer, opposite the Al.sub.y Ga.sub.1-y N layer and a nucleation layer between the Al.sub.x Ga.sub.1-x N buffer layer and the substrate.

  18. Semiconductor lasers with asymmetric barrier layers: An approach to high temperature stability

    SciTech Connect

    Zhukov, A. E.; Kryzhanovskaya, N. V. Maximov, M. V.; Egorov, A. Yu.; Pavlov, M. M.; Zubov, F. I.; Asryan, L. V.

    2011-04-15

    A method for enhancing the temperature stability of injection lasers that is based on introducing asymmetric barrier layers on each side of the quantum-confined active region is suggested. The asymmetric barrier layers prevent electrons from escaping from the active region into the part of the waveguide region where holes are injected and prevent holes from escaping into the part of the waveguide region where electrons are injected. Parameters of the layers that allow implementation of the asymmetric-barrier design using pseudomorphic structures grown on GaAs substrates are determined. The calculation of the threshold characteristics of these laser structures demonstrates that suppression of electron-hole recombination outside the active region attained due to the use of asymmetric barrier layers leads to a significant decrease in the threshold current and an increase in the characteristic temperature of this type of lasers.

  19. Silicon based substrate with calcium aluminosilicate environmental/thermal barrier layer

    NASA Technical Reports Server (NTRS)

    Eaton, Jr., Harry Edwin (Inventor); Allen, William Patrick (Inventor); Miller, Robert Alden (Inventor); Jacobson, Nathan S. (Inventor); Smialek, James L. (Inventor); Opila, Elizabeth J. (Inventor); Lee, Kang N. (Inventor); Nagaraj, Bangalore A. (Inventor); Wang, Hongyu (Inventor); Meschter, Peter Joel (Inventor)

    2001-01-01

    A barrier layer for a silicon containing substrate which inhibits the formation of gaseous species of silicon when exposed to a high temperature aqueous environment comprises a calcium alumino silicate.

  20. Preparation and characterization of TiO2 barrier layers for dye-sensitized solar cells.

    PubMed

    Zheng, Yichen; Klankowski, Steven; Yang, Yiqun; Li, Jun

    2014-07-09

    A TiO2 barrier layer is critical in enhancing the performance of dye-sensitized solar cells (DSSCs). Two methods to prepare the TiO2 barrier layer on fluorine-doped tin dioxide (FTO) surface were systematically studied in order to minimize electron-hole recombination and electron backflow during photovoltaic processes of DSSCs. The film structure and materials properties were correlated with the photovoltaic characteristics and electrochemical properties. In the first approach, a porous TiO2 layer was deposited by wet chemical treatment of the sample with TiCl4 solution for time periods varying from 0 to 60 min. The N719 dye molecules were found to be able to insert into the porous barrier layers. The 20 min treatment formed a nonuniform but intact TiO2 layer of ∼100-300 nm in thickness, which gave the highest open-circuit voltage VOC, short-circuit photocurrent density JSC, and energy conversion efficiency. But thicker TiO2 barrier layers by this method caused a decrease in JSC, possibly limited by lower electrical conductance. In the second approach, a compact TiO2 barrier layer was created by sputter-coating 0-15 nm Ti metal films on FTO/glass and then oxidizing them into TiO2 with thermal treatment at 500 °C in the air for 30 min. The dye molecules were found to only attach at the outer surface of the barrier layer and slightly increased with the layer thickness. These two kinds of barrier layer showed different characteristics and may be tailored for different DSSC studies.

  1. Effect of W addition on the electroless deposited NiP(W) barrier layer

    NASA Astrophysics Data System (ADS)

    Tao, Yishi; Hu, Anmin; Hang, Tao; Peng, Li; Li, Ming

    2013-10-01

    Electroless deposition of NiP, NiWP thin film on p-type Si as the barrier layer to prevent the diffusion of Cu into Si was investigated. The thermal stability of the Si/Ni(W)P/Cu layers were evaluated by measuring the changes of resistance of the samples after annealed at various temperatures. XRD was applied to detect the formation of Cu3Si and evaluate the barrier performance of the layers. The results of XRD of the stacked Si/NiP/Cu, Si/NiWP-1/Cu, Si/NiWP-2/Cu films reveal that Cu atom could diffuse through NiP barrier layer at 450 °C, Cu could hardly diffuse through NiWP layer at 550 °C. This means that with W added in the layer, the barrier performance is improved. Although the resistance of Si/NiWP-1 and Si/NiWP-2 are higher than that of Si/NiP, the resistance of stacked layers of Si/NiWP-1/Cu and Si/NiWP-2/Cu are close to that of Si/NiP/Cu. This means that using NiWP as barrier layer is acceptable.

  2. Co-Rolled U10Mo/Zirconium-Barrier-Layer Monolithic Fuel Foil Fabrication Process

    SciTech Connect

    G. A. Moore; M. C. Marshall

    2010-01-01

    Integral to the current UMo fuel foil processing scheme being developed at Idaho National Laboratory (INL) is the incorporation of a zirconium barrier layer for the purpose of controlling UMo-Al interdiffusion at the fuel-meat/cladding interface. A hot “co-rolling” process is employed to establish a ~25-µm-thick zirconium barrier layer on each face of the ~0.3-mm-thick U10Mo fuel foil.

  3. Graded-bandgap AlGaAs solar cells for AlGaAs/Ge cascade cells

    NASA Technical Reports Server (NTRS)

    Timmons, M. L.; Venkatasubramanian, R.; Colpitts, T. S.; Hills, J. S.; Hutchby, J. A.; Iles, P. A.; Chu, C. L.

    1991-01-01

    Some p/n graded-bandgap Al(x)Ga(1-x)As solar cells were fabricated and show AMO conversion efficiencies in excess of 15 percent without antireflection (AR) coatings. The emitters of these cells are graded between 0.008 is less than or equal to x is less than or equal to 0.02 during growth of 0.25 to 0.30 micron thick layers. The keys to achieving this performance were careful selection of organometallic sources and scrubbing oxygen and water vapor from the AsH3 source. Source selection and growth were optimized using time-resolved photoluminescence. Preliminary radiation-resistance measurements show AlGaAs cells degraded less than GaAs cells at high 1 MeV electron fluences, and AlGaAs cells grown on GaAs and Ge substrates degrade comparably.

  4. Control of the anodic aluminum oxide barrier layer opening process by wet chemical etching.

    PubMed

    Han, Catherine Y; Willing, Gerold A; Xiao, Zhili; Wang, H Hau

    2007-01-30

    In this work, it has been shown that, through a highly controlled process, the chemical etching of the anodic aluminum oxide membrane barrier layer can be performed in such a way as to achieve nanometer-scale control of the pore opening. As the barrier layer is etched away, subtle differences revealed through AFM phase imaging in the alumina composition in the barrier layer give rise to a unique pattern of hexagonal walls surrounding each of the barrier layer domes. These nanostructures observed in both topography and phase images can be understood as differences in the oxalate anion contaminated alumina versus pure alumina. This information bears significant implication for catalysis, template synthesis, and chemical sensing applications. From the pore opening etching studies, the etching rate of the barrier layer (1.3 nm/min) is higher than that of the inner cell wall (0.93 nm/min), both of which are higher than the etching rate of pure alumina layer (0.5-0.17 nm/min). The established etching rates together with the etching temperature allow one to control the pore diameter systematically from 10 to 95 nm.

  5. On the hydro-dispersive equivalence between multi-layered mineral barriers

    NASA Astrophysics Data System (ADS)

    Guyonnet, D.; Perrochet, P.; Côme, B.; Seguin, J.-J.; Parriaux, A.

    2001-10-01

    In the context of municipal solid waste and hazardous waste disposal, the notion of "equivalence" between different barrier designs appears in regulatory documents from several industrialized countries. While in the past, equivalence has been thought of mainly in terms of contaminant travel times, in recent years it has been defined more in terms of the magnitude of a disposal site's potential impact on groundwater resources. This paper presents some original analytical solutions to the problem of contaminant migration through a multi-layered mineral barrier. The solutions account for the two major mechanisms of subsurface contaminant migration, namely, advection and diffusion-dispersion. An example application using the proposed solutions and a numerical model illustrates how one multi-layered mineral barrier can be considered superior to another from a strictly hydro-dispersive viewpoint. The influence of partial saturation of the mineral barrier is investigated using a numerical solution to the Richards equation for unsaturated flow. It is emphasized that conclusions relative to the superiority of one multi-layered barrier, with respect to another, should not only consider hydro-dispersive aspects, but also other processes such as the mechanical and chemical evolutions of the different barrier components. Although such phenomena are poorly addressed by existing models, failure to take them into account, at least in a qualitative fashion, may lead to unconservative conclusions with respect to barrier equivalence.

  6. Investigation of Structure and Properties of Barrier Layers in Metals (Fe, Cu) at Low Temperatures

    NASA Astrophysics Data System (ADS)

    Kuterbekov, K. A.; Nurkenov, S. A.; Kislitsin, S. B.; Kuketayev, T. A.; Tussupbekova, A. K.

    2016-11-01

    Experimental studies of the effect of a barrier layer on the kinetics of thermally induced diffusion procesess and phase transformations in a layered Fe-Be syatem are investigated at the energy 1.6 MeV. Thermal stability of the barrier layer in the Fe:O+ system is validated and a possibility of its use as a subsurface layer for a beryllium coating is demonstrated. For the Cu:O+ system it is shown that the implanted layer in the matrix comes apart already at the annealing temperature 180°C and could not be used in a copper matrix as a subsurface barrier layer. For the first time, a method is proposed for retardation of diffusion and phase formation processes and realized in a layered iron - beryllium system using an implanted layer of oxygen ions. The sequence and characteristic times of thermally-induced phase-transformation processes taking place in the subsurface layers and in the bulk of the Fe (10 μm) systems: O+ - Be (0.7 μm) - 57Fe (0.1 μm) and Fe (10 μm) - Be (0.7 μm) - 57Fe (0.1 μm) are determined.

  7. Diffusion barrier performance of novel Ti/TaN double layers for Cu metallization

    NASA Astrophysics Data System (ADS)

    Zhou, Y. M.; He, M. Z.; Xie, Z.

    2014-10-01

    Novel Ti/TaN double layers offering good stability as a barrier against Cu metallization have been made achievable by annealing in vacuum better than 1 × 10-3 Pa. Ti/TaN double layers were formed on SiO2/Si substrates by DC magnetron sputtering and then the properties of Cu/Ti/TaN/SiO2/Si film stacks were studied. It was found that the Ti/TaN double layers provide good diffusion barrier between Cu and SiO2/Si up to 750 °C for 30 min. The XRD, Auger and EDS results show that the Cu-Si compounds like Cu3Si were formed by Cu diffusion through Ti/TaN barrier for the 800 °C annealed samples. It seems that the improved diffusion barrier property of Cu/Ti/TaN/SiO2/Si stack is due to the diffusion of nitrogen along the grain boundaries in Ti layer, which would decrease the defects in Ti film and block the diffusion path for Cu diffusion with increasing annealing temperature. The failure mechanism of Ti/TaN bi-layer is similar to the Cu/TaN/Si metallization system in which Cu atoms diffuse through the grain boundary of barrier and react with silicon to form Cu3Si.

  8. The 1.1 micrometer and visible emission semiconductor diode lasers. [(AlGa)As lasers

    NASA Technical Reports Server (NTRS)

    Ladany, I.; Nuese, C. J.; Kressel, H.

    1978-01-01

    In (AlGa)As, the first of three alloy systems studied, Continuous Wave (CW) operation was obtained at room temperature at a wavelength as low as 7260 A. Reliability in this system was studied in the incoherent mode. Zinc doped devices had significant degradation, whereas Ge or Ge plus Zi doped devices had none. The Al2O3 facet coatings were shown to significantly reduce facet deterioration in all types of lasers, longer wavelength units of that type having accumulated (at the time of writing) 22,000 hours with little if any degradation. A CL study of thin (AlGa)As layers revealed micro fluctuation in composition. A macro-scale fluctuation was observed by electroreflectance. An experimental and theoretical study of the effect of stripe width on the threshold current was carried out. Emission below 7000 A was obtained in VPE grown Ga(AsP) (In,Ga)P with CW operation at 10 C. Lasers and LED's were made by LPE in (InGa) (AsP). Laser thresholds of 5 kA/cm2 were obtained, while LED efficiences were on the order of 2%. Incoherent life test over 6000 hours showed no degradation.

  9. Single layer graphene protective gas barrier for copper photocathodes

    NASA Astrophysics Data System (ADS)

    Liu, Fangze; Moody, Nathan A.; Jensen, Kevin L.; Pavlenko, Vitaly; Narvaez Villarrubia, Claudia W.; Mohite, Aditya D.; Gupta, Gautam

    2017-01-01

    Photocathodes can benefit from a thin protection layer and attain long-term stability. Graphene is potentially a good candidate for such application. We report direct growth of single-layer graphene on single crystal Cu(110) photocathodes using chemical vapor deposition and the effective protection of copper photocathodes with graphene against degradation under atmospheric conditions. Due to the interaction and charge transfer between graphene and copper, the graphene-protected cathodes have 0.25 eV lower work function and 17% higher quantum efficiency at 250 nm compared with bare Cu cathodes. The graphene coating can protect copper photocathodes from degradation for more than 20 min in an exposure to 200 Torr of air. The validation of graphene-photocathode compatibility opens a new route to the lifetime-extension for photocathodes.

  10. Two-layer thermal barrier coating for turbine airfoils - furnace and burner rig test results

    NASA Technical Reports Server (NTRS)

    Stecura, S.

    1976-01-01

    A simple, two-layer plasma-sprayed thermal barrier coating system was developed which has the potential for protecting high temperature air-cooled gas turbine components. Of those coatings initially examined, the most promising system consisted of a Ni-16Cr-6Al-0.6Y (in wt%) thermal barrier coating (about 0.005 to 0.010 cm thick) and a ZrO2-12Y2O3 (in wt%) thermal barrier coating (about 0.025 to 0.064 cm thick). This thermal barrier substantially lowered the metal temperature of an air-cooled airfoil. The coating withstood 3,200 cycles (80 sec at 1,280 C surface temperature) and 275 cycles (1 hr at 1,490 C surface temperature) without cracking or spalling. No separation of the thermal barrier from the bond coating or the bond coating from the substrate was observed.

  11. Low-Cost Protective Layer Coatings on Thermal Barrier Coatings via CCVD. Final Report

    SciTech Connect

    Hendrick, Michelle

    2003-09-18

    MicroCoating Technologies, Inc., investigated the use of the Combustion Chemical Vapor Deposition (CCVD) process to deposit oxygen or sintering barrier coatings for thermal barrier coating (TBC) applications. In addition, it looked at the use of its nanopowders by the NanoSpray process for developing smoothing layers on TBCs. Testing and analysis of coated substrates included heat treatments, scanning electron microscopy, x-ray diffraction and profilometry. Coatings on TBC-coated superalloy coupons were tested by an outside collaborator. Results from the investigations indicated that the thin film coatings were not well-suited as barrier layers on the rough bond coat or TBC. Subsequent investigations considered smoothing layers on the TBC, as suggested by the collaborator, using nanopowder-based coatings. Smoothing of substrate surfaces by 50% was observed by profilometry.

  12. Investigation of Diffusion Barrier Layers for Bi-Doped Mg2(Si,Ge) Thermoelectric Legs

    NASA Astrophysics Data System (ADS)

    Prahoveanu, Codrin; Laversenne, Laetitia; de Vaulx, Cédric; Bès, Alexandre; Azzouz, Kamel; Lacoste, Ana

    2016-11-01

    The performance of thermoelectric (TE) modules is governed not only by the thermoelectric materials whose properties are capitalized, but also on the quality of the electrical contacts which are ubiquitous in the design of the device. To ensure the necessary stability of the interfaces between the TE materials and the electrodes, diffusion barriers are generally used. In this study, attempts are presented in finding diffusion barriers that would be suitable for Mg2(Si,Ge) TE materials. These involved the deposition by microwave plasma-assisted co-sputtering of intermediate gradient layers starting from Mg and Si, ending up with a Ni layer, or the deposition of metallic layers (Ti, Cr, W and Ta). The effectiveness of the deposited layers as diffusion barriers is assessed after the legs were subjected to a brazing process, with the results favoring the use of gradient layers with a thick Ni layer and metallic layers based on Ta and Cr, despite some adherence issues for the latter.

  13. New Method to Determine the Schottky Barrier in Few-Layer Black Phosphorus Metal Contacts.

    PubMed

    Lee, Su Yeong; Yun, Won Seok; Lee, J D

    2017-03-01

    Schottky barrier height and carrier polarity are seminal concepts for a practical device application of the interface between semiconductor and metal electrode. Investigation of those concepts is usually made by a conventional method such as the Schottky-Mott rule, incorporating the metal work function and semiconductor electron affinity, or the Fermi level pinning effect, resulting from the metal-induced gap states. Both manners are, however, basically applied to the bulk semiconductor metal contacts. To explore few-layer black phosphorus metal contacts far from the realm of bulk, we propose a new method to determine the Schottky barrier by scrutinizing the layer-by-layer phosphorus electronic structure from the first-principles calculation combined with the state-of-the-art band unfolding technique. In this study, using the new method, we calculate the Schottky barrier height and determine the contact polarity of Ti, Sc, and Al metal contacts to few-layer (mono-, bi-, tri-, and quadlayer) black phosphorus. This gives a significant physical insight toward the utmost layer-by-layer manipulation of electronic properties of few-layer semiconductor metal contacts.

  14. High thermal stability of magnetic tunnel junctions with oxide diffusion barrier layers

    NASA Astrophysics Data System (ADS)

    Fukumoto, Yoshiyuki; Shimura, Ken-ichi; Kamijo, Atsushi; Tahara, Shuichi; Yoda, Hiroaki

    2004-01-01

    We developed two types of magnetic tunnel junctions (MTJs) that showed high thermal stability. One is a PtMn exchange-biased spin-valve MTJ with a CoFe/Al-oxide (AlOx)/NiFe free layer and a CoFeTaOx/CoFe pinned layer, and the other is a pseudo-spin-valve (PSV) MTJ with a CoFe/AlOx/NiFe soft layer, where AlOx and CoFeTaOx act as barriers for Ni and Mn diffusion toward the tunnel barrier, respectively. After 390 °C-1H annealing, the PSV MTJs maintained 28% and the SV MTJs 39% of tunnel magnetoresistance. Transmission electron microscopy observation of the SV MTJs after 380 °C-1H annealing revealed that the migrated Mn atoms were trapped at the CoFeTaOx layer.

  15. High-flux Thin-film Nanofibrous Composite Ultrafiltration Membranes Containing Cellulose Barrier Layer

    SciTech Connect

    Ma, H.; Yoon, K; Rong, L; Mao, Y; Mo, Z; Fang, D; Hollander, Z; Gaiteri, J; Hsiao , B; Chu, B

    2010-01-01

    A novel class of thin-film nanofibrous composite (TFNC) membrane consisting of a cellulose barrier layer, a nanofibrous mid-layer scaffold, and a melt-blown non-woven substrate was successfully fabricated and tested as an ultrafiltration (UF) filter to separate an emulsified oil and water mixture, a model bilge water for on-board ship bilge water purification. Two ionic liquids: 1-butyl-3-methylimidazolium chloride and 1-ethyl-3-methylimidazolium acetate, were chosen as the solvent to dissolve cellulose under mild conditions. The regenerated cellulose barrier layer exhibited less crystallinity (determined by wide-angle X-ray diffraction, WAXD) than the original cotton linter pulps, but good thermal stability (determined by thermal gravimetric analysis, TGA). The morphology, water permeation, and mechanical stability of the chosen TFNCmembranes were thoroughly investigated. The results indicated that the polyacrylonitrile (PAN) nanofibrous scaffold was partially imbedded in the cellulose barrier layer, which enhanced the mechanical strength of the top barrier layer. The permeation flux of the cellulose-based TFNCmembrane was significantly higher (e.g. 10x) than comparable commercial UFmembranes (PAN10 and PAN400, Sepro) with similar rejection ratios for separation of oil/water emulsions. The molecular weight cut-off (MWCO) of TFNC membranes with cellulose barrier layer was evaluated using dextran feed solutions. The rejection was found to be higher than 90% with a dextran molecular weight of 2000 KDa, implying that the nominal pore size of the membrane was less than 50 nm. High permeation flux was also observed in the filtration of an emulsified oil/water mixture as well as of a sodium alginate aqueous solution, while high rejection ratio (above 99.5%) was maintained after prolonged operation. A variation of the barrier layer thickness could dramatically affect the permeation flux and the rejection ratio of the TFNCmembranes, while different sources of cellulose

  16. Organo-montmorillonite Barrier Layers Formed by Combustion: Nanostructure and Permeability

    SciTech Connect

    Fox, James B; Ambuken, Preejith V.; Stretz, Holly A; Meisner, Roberta Ann; Payzant, E Andrew

    2010-01-01

    Self-assembly of nanoparticles into barrier layers has been the most cited theoretical explanation for the significant reduction in flammability often noted for nanocomposites formed from polymers and montmorillonite organoclays. Both mass and heat transport reductions have been credited for such improvements, and in most cases a coupled mechanism is expected. To provide validation for early models, new model barrier layers were produced from organoclays, and these barrier layers subjected to novel permeability analysis to obtain a flux. The effects of surfactant, temperature and pressure on barrier layer structure were examined. XRD versus TGA results suggest that chemical degradation of four different organoclays and physical collapse on heating are not correlated. Addition of pressure as low as 7kPa also altered the structure produced. Permeability of Ar through the ash was found to be sensitive to structural change/self assembly of high aspect ratio MMT nanoparticles. Actual fluxes ranged from 0.139 to 0.151 mol(m2.sec)-1, values which will provide useful limits in verifying models for the coupled contribution of mass and heat transfer to flammability parameters such as peak heat release rate.

  17. Separated effects of ions, metastables and photons on the properties of barrier layers on polymers

    NASA Astrophysics Data System (ADS)

    Biskup, Beatrix; Boeke, Marc; Benedikt, Jan; von Keudell, Achim

    2016-09-01

    Analyses of a-C:H /a-Si:H multilayers on polymer substrates indicated that prolonged ion bombardment influences negatively the properties of the barrier layer, while a short plasma pretreatment can improve the barrier effect. This work is motivated by these results and investigates the influence of different reactive plasma components, namely ions, metastables and VUV-photons, on the properties of the grown barrier layer. To separate the different species and their influence on plasma pretreatment and film growth, we build a grid system, which repels the ions from the substrate, so that only metastables and VUV-photons have an effect on the layer. An integral part of this investigation is, to measure the photon fluxes to the substrate by an intensity calibrated VUV monochromator. For that, a differentially pumped monochromator with a spectral range 30 - 300 nm is used, where the two most prominent argon lines at 104.9 and 106.8 nm can be measured. In this approach we are able to study the different effects of the plasma species and also possible synergy effects, to improve the properties of the barrier layer. This work is supported by the DFG within the SFB-TR 87.

  18. Improving an organic photodiode by incorporating a tunnel barrier between the donor and acceptor layers

    NASA Astrophysics Data System (ADS)

    Campbell, I. H.; Crone, B. K.

    2012-07-01

    We demonstrate increased photocurrent quantum efficiency in a model donor/acceptor (tetracene/C60) photodiode by incorporating an insulating tunnel barrier between the tetracene and C60 layers. Photodiode efficiency results from the interplay of a number of processes which add to or subtract from the overall device efficiency. The positive rates are those of exciton dissociation and charge separation, the negative rates include exciton and charge transfer complex recombination. We show that by introducing a thin insulating layer between the donor and acceptor layers in a photodiode, we can modify the exciton dissociation and charge transfer complex recombination rates and improve device performance.

  19. Interaction of Cu with CoSi2 with and without TiNx barrier layers

    NASA Astrophysics Data System (ADS)

    Olowolafe, J. O.; Li, Jian; Blanpain, B.; Mayer, J. W.

    1990-09-01

    Thermally induced interactions of Cu with CoSi2, with and without interposed TiNx layers, have been studied using Rutherford backscattering spectrometry, Auger electron spectroscopy, and x-ray diffraction. Cu diffuses through a preformed CoSi2 layer to form the structure Cu/CoSi2/Cu3Si/Si at temperatures above 300 °C, and no dissociation of CoSi2 occurs. A 50 nm TiNx(x≊1) layer is observed to be an effective diffusion barrier up to about 500 °C between Cu and CoSi2.

  20. Development of Barrier Layers for the Protection of Candidate Alloys in the VHTR

    SciTech Connect

    Levi, Carlos G.; Jones, J. Wayne; Pollock, Tresa M.; Was, Gary S.

    2015-01-22

    The objective of this project was to develop concepts for barrier layers that enable leading candi- date Ni alloys to meet the longer term operating temperature and durability requirements of the VHTR. The concepts were based on alpha alumina as a primary surface barrier, underlay by one or more chemically distinct alloy layers that would promote and sustain the formation of the pro- tective scale. The surface layers must possess stable microstructures that provide resistance to oxidation, de-carburization and/or carburization, as well as durability against relevant forms of thermo-mechanical cycling. The system must also have a self-healing ability to allow endurance for long exposure times at temperatures up to 1000°C.

  1. Surface barrier height for different Al compositions and barrier layer thicknesses in AlGaN/GaN heterostructure field effect transistors

    SciTech Connect

    Goyal, Nitin Fjeldly, Tor A.; Iniguez, Benjamin

    2013-12-04

    In this paper, we present a physics based analytical model for the calculation of surface barrier height for given values of barrier layer thicknesses and Al mole fractions. An explicit expression for the two dimensional electron gas density is also developed incorporating the change in polarization charges for different Al mole fractions.

  2. Using fugacity to predict volatile emissions from layered materials with a clay/polymer diffusion barrier

    NASA Astrophysics Data System (ADS)

    Yuan, Huali; Little, John C.; Marand, Eva; Liu, Zhe

    Structural insulated panels (SIPs) have significant environmental and energy advantages. However, the tight structure that results may cause degraded indoor air quality and the potential release of volatile organic compounds (VOCs) from these layered materials must be considered. A physically based model for predicting VOC emissions from multi-layer materials is described. Fugacity is used to eliminate the concentration discontinuities at the interface between layers. This avoids an obstacle associated with numerically simulating mass transfer in composite materials. The numerical model is verified for a double-layer system by comparing predicted concentrations to those obtained with a previously published analytical model. In addition, hexanal emissions from multi-layer SIPs are simulated to demonstrate the usefulness of the fugacity approach. Finally, the multi-layer model is used to investigate the impact that clay/polyurethane nanocomposite diffusion barriers can have on VOC emissions. Indoor gas-phase concentrations can be greatly reduced with a barrier layer on the surface, thereby minimizing the environmental impact of SIPs.

  3. Electroless deposition of NiCrB diffusion barrier layer film for ULSI-Cu metallization

    NASA Astrophysics Data System (ADS)

    Wang, Yuechun; Chen, Xiuhua; Ma, Wenhui; Shang, Yudong; Lei, Zhengtao; Xiang, Fuwei

    2017-02-01

    NiCrB films were deposited on Si substrates using electroless deposition as a diffusion barrier layer for Cu interconnections. Samples of the prepared NiCrB/SiO2/Si and NiCrB/Cu/NiCrB/SiO2/Si were annealed at temperatures ranging from 500 °C to 900 °C. The reaction mechanism of the electroless deposition of the NiCrB film, the failure temperature and the failure mechanism of the NiCrB diffusion barrier layer were investigated. The prepared samples were subjected to XRD, XPS, FPP and AFM to determine the phases, composition, sheet resistance and surface morphology of samples before and after annealing. The results of these analyses indicated that the failure temperature of the NiCrB barrier film was 900 °C and the failure mechanism led to crystallization and grain growth of the NiCrB barrier layer after high temperature annealing. It was found that this process caused Cu grains to reach Si substrate through the grain boundaries, and then the reaction between Cu and Si resulted in the formation of highly resistive Cu3Si.

  4. Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers

    SciTech Connect

    Rampelberg, Geert; Devloo-Casier, Kilian; Deduytsche, Davy; Detavernier, Christophe; Blasco, Nicolas

    2013-03-18

    Thin vanadium nitride (VN) layers were grown by atomic layer deposition using tetrakis(ethylmethylamino)vanadium and NH{sub 3} plasma at deposition temperatures between 70 Degree-Sign C and 150 Degree-Sign C on silicon substrates and polymer foil. X-ray photoelectron spectroscopy revealed a composition close to stoichiometric VN, while x-ray diffraction showed the {delta}-VN crystal structure. The resistivity was as low as 200 {mu}{Omega} cm for the as deposited films and further reduced to 143 {mu}{Omega} cm and 93 {mu}{Omega} cm by annealing in N{sub 2} and H{sub 2}/He/N{sub 2}, respectively. A 5 nm VN layer proved to be effective as a diffusion barrier for copper up to a temperature of 720 Degree-Sign C.

  5. Determination of the Schottky barrier height of ferromagnetic contacts to few-layer phosphorene

    SciTech Connect

    Anugrah, Yoska; Robbins, Matthew C.; Koester, Steven J.; Crowell, Paul A.

    2015-03-09

    Phosphorene, the 2D analogue of black phosphorus, is a promising material for studying spin transport due to its low spin-orbit coupling and its ½ nuclear spin, which could allow the study of hyperfine effects. In this work, the properties of permalloy (Py) and cobalt (Co) contacts to few-layer phosphorene are presented. The Schottky barrier height was extracted and determined as a function of gate bias. Flat-band barrier heights, relative to the valence band edge, of 110 meV and 200 meV were determined for Py and Co, respectively. These results are important for future studies of spin transport in phosphorene.

  6. Fundamental studies of diffusion barriers for copper metallization and atomic layer deposited high-kappa films

    NASA Astrophysics Data System (ADS)

    Majumder, Prodyut

    Copper is used as interconnect material due to its lower resistivity, higher melting point and higher electromigration resistance than those of Al. However, Cu diffuses rapidly into Si and SiO2, to form Cu-silicides at temperatures as low as 200°C. Being highly resistive, Cu-silicides are detrimental in the performance of the integrated circuits. The continued downscaling of device dimensions has placed a high priority on the development of thin diffusion barrier layers in copper metallization. The effectiveness and performance of Mo-based bi-layers, such as Mo/WN, Mo/Ti, and Mo/TiN, and a ternary single layer, Mo-V nitride, deposited using magnetron sputtering are investigated in this work. The Cu/barrier film(s)/Si structures are annealed at high temperatures in N2 and the interactions between the layers along with the possible formation of any anneal-induced reaction products are evaluated using different techniques. The formation of Cu3Si due to the intermixing of Cu and Si is indicative of barrier breakdown. The decreasing device dimensions in microelectronic circuits set high demands for film conformality as the barrier layer thickness is anticipated to decrease to 1.9 nm for the 25 nm node (by 2015). In order to meet future requirement of ultrathin barriers, the apparently counter-intuitive approach of using insulating films, such as HfO2 and Al2O 3, deposited using atomic layer deposition (ALD) technique has been studied and revealed interesting and promising results. In microelectronics fabrication, there is also a need for thin films with high dielectric constant (kappa) in order to continue device dimension reduction of logic and memory devices. With conventional SiO2 based materials, continued scale minimization mandates single digit atomic layer thicknesses of the dielectric layers that lead to the ultimate limitation of quantum mechanical tunneling. To overcome this limitation, high-kappa metal oxides have been recognized as future gate dielectrics

  7. Planar varactor frequency multiplier devices with blocking barrier

    NASA Technical Reports Server (NTRS)

    Lieneweg, Udo (Inventor); Frerking, Margaret A. (Inventor); Maserjian, Joseph (Inventor)

    1994-01-01

    The invention relates to planar varactor frequency multiplier devices with a heterojunction blocking barrier for near millimeter wave radiation of moderate power from a fundamental input wave. The space charge limitation of the submillimeter frequency multiplier devices of the BIN(sup +) type is overcome by a diode structure comprising an n(sup +) doped layer of semiconductor material functioning as a low resistance back contact, a layer of semiconductor material with n-type doping functioning as a drift region grown on the back contact layer, a delta doping sheet forming a positive charge at the interface of the drift region layer with a barrier layer, and a surface metal contact. The layers thus formed on an n(sup +) doped layer may be divided into two isolated back-to-back BNN(sup +) diodes by separately depositing two surface metal contacts. By repeating the sequence of the drift region layer and the barrier layer with the delta doping sheet at the interfaces between the drift and barrier layers, a plurality of stacked diodes is formed. The novelty of the invention resides in providing n-type semiconductor material for the drift region in a GaAs/AlGaAs structure, and in stacking a plurality of such BNN(sup +) diodes stacked for greater output power with and connected back-to-back with the n(sup +) GaAs layer as an internal back contact and separate metal contact over an AlGaAs barrier layer on top of each stack.

  8. Ceramic barrier layers for flexible thin film solar cells on metallic substrates: a laboratory scale study for process optimization and barrier layer properties.

    PubMed

    Delgado-Sanchez, Jose-Maria; Guilera, Nuria; Francesch, Laia; Alba, Maria D; Lopez, Laura; Sanchez, Emilio

    2014-11-12

    Flexible thin film solar cells are an alternative to both utility-scale and building integrated photovoltaic installations. The fabrication of these devices over electrically conducting low-cost foils requires the deposition of dielectric barrier layers to flatten the substrate surface, provide electrical isolation between the substrate and the device, and avoid the diffusion of metal impurities during the relatively high temperatures required to deposit the rest of the solar cell device layers. The typical roughness of low-cost stainless-steel foils is in the hundred-nanometer range, which is comparable or larger than the thin film layers comprising the device and this may result in electrical shunts that decrease solar cell performance. This manuscript assesses the properties of different single-layer and bilayer structures containing ceramics inks formulations based on Al2O3, AlN, or Si3N4 nanoparticles and deposited over stainless-steel foils using a rotogravure printing process. The best control of the substrate roughness was achieved for bilayers of Al2O3 or AlN with mixed particle size, which reduced the roughness and prevented the diffusion of metals impurities but AlN bilayers exhibited as well the best electrical insulation properties.

  9. 1-nm-thick graphene tri-layer as the ultimate copper diffusion barrier

    SciTech Connect

    Nguyen, Ba-Son; Lin, Jen-Fin

    2014-02-24

    We demonstrate the thinnest ever reported Cu diffusion barrier, a 1-nm-thick graphene tri-layer. X-ray diffraction patterns and Raman spectra show that the graphene is thermally stable at up to 750 °C against Cu diffusion. Transmission electron microscopy images show that there was no inter-diffusion in the Cu/graphene/Si structure. Raman analyses indicate that the graphene may have degraded into a nanocrystalline structure at 750 °C. At 800 °C, the perfect carbon structure was damaged, and thus the barrier failed. The results of this study suggest that graphene could be the ultimate Cu interconnect diffusion barrier.

  10. New model of the pinning potential barrier in layered HTc superconductors

    NASA Astrophysics Data System (ADS)

    Sosnowski, J.

    2016-11-01

    New model of the pinning potential barrier in multilayered HTc superconductors is presented, based on geometrical approach to the capturing interaction of pancake-type vortices with nano-sized defects. Using the above model the transport current flow phenomena in these materials, especially the current-voltage characteristics and critical current density, have been considered. Details of theoretical analysis are given, including the derivation of basic mathematical equations describing the potential barrier as a function of transport current intensity and the initial position of captured pancake vortex. Computer simulation has been performed of the influence of transport current amplitude on the potential barrier height for various sizes of pinning centers and initial pancake vortex position as well as the influence of fast neutrons irradiation creating nano-sized defects on critical current of HTc layered superconductor.

  11. Alumina Paste Layer as a Sublimation Suppression Barrier for Yb14MnSb11

    NASA Technical Reports Server (NTRS)

    Paik, Jong-Ah; Caillat, Thierry

    2010-01-01

    Sublimation is a major cause of degradation of thermoelectric power generation systems. Most thermoelectric materials tend to have peak values at the temperature where sublimation occurs. A sublimation barrier is needed that is stable at operating temperatures, inert against thermoelectric materials, and able to withstand thermal cycling stress. A porous alumina paste layer is suitable as a sublimation barrier for Yb14MnSb11. It can accommodate stress generated by the thermal expansion discrepancy between the suppression layer and thermoelectric materials. Sublimation suppression is achieved by filling pores naturally with YbO2, a natural byproduct of sublimation. YbO2 generated during the sublimation of Yb14MnSb11 fills the porous structure of the alumina paste, causing sublimation to decrease with time as the pores become filled.

  12. Mechanisms governing the interfacial delamination of thermal barrier coating system with double ceramic layers

    NASA Astrophysics Data System (ADS)

    Xu, Rong; Fan, Xueling; Wang, T. J.

    2016-05-01

    A systematic study of factors affecting the interfacial delamination of thermal barrier coating system (TBCs) with double ceramic layers (DCL) is presented. Crack driving forces for delaminations at two weak interfaces are examined. The results show that a thicker outermost ceramic layer can induce dramatic increase in crack driving force and make the interface between two ceramic coatings become more prone to delamination. The behavior is shown to be more prominent in TBCs with stiffer outmost coating. The thickness ratio of two ceramic layers is an important parameter for controlling the failure mechanisms and determining the lifetime of DCL TBCs under inservice condition. By accounting for the influences of thickness ratio of two ceramic layers and interfacial fracture toughnesses of two involved interfaces, the fracture mechanism map of DCL TBCs has been constructed, in which different failure mechanisms are identified. The results quanlitatively agree with the aviliable experimental data.

  13. Dielectric barrier discharge control of a turbulent boundary layer in a supersonic flow

    SciTech Connect

    Im, S.; Do, H.; Cappelli, M. A.

    2010-07-26

    We demonstrate effective manipulation of a turbulent boundary layer at Mach 4.7 conditions using a surface dielectric barrier discharge (DBD) actuator. The freestream conditions of low static pressure (1 kPa) and temperature (60 K) are conducive to the visualization of flow features using Rayleigh scattering from condensed CO{sub 2} particles. The boundary layer thinning is observed when spanwise momentum is induced by the low power (6.8 W), low frequency (28 kHz) single actuator pair oriented parallel to the freestream flow.

  14. Suitability of polystyrene as a functional barrier layer in coloured food contact materials.

    PubMed

    Genualdi, Susan; Addo Ntim, Susana; Begley, Timothy

    2015-01-01

    Functional barriers in food contact materials (FCMs) are used to prevent or reduce migration from inner layers in multilayer structures to food. The effectiveness of functional barrier layers was investigated in coloured polystyrene (PS) bowls due to their intended condition of use with hot liquids such as soups or stew. Migration experiments were performed over a 10-day period using USFDA-recommended food simulants (10% ethanol, 50% ethanol, corn oil and Miglyol) along with several other food oils. At the end of the 10 days, solvent dyes had migrated from the PS bowls at 12, 1 and 31,000 ng cm(-)(2) into coconut oil, palm kernel oil and Miglyol respectively, and in coconut oil and Miglyol the colour change was visible to the human eye. Scanning electron microscope (SEM) images revealed that the functional barrier was no longer intact for the bowls exposed to coconut oil, palm kernel oil, Miglyol, 10% ethanol, 50% ethanol and goat's milk. Additional tests showed that 1-dodecanol, a lauryl alcohol derived from palm kernel oil and coconut oil, was present in the PS bowls at an average concentration of 11 mg kg(-1). This compound is likely to have been used as a dispersing agent for the solvent dye and aided the migration of the solvent dye from the PS bowl into the food simulant. The solvent dye was not found in the 10% ethanol, 50% ethanol and goat's milk food simulants above their respective limits of detection, which is likely to be due to its insolubility in aqueous solutions. A disrupted barrier layer is of concern because if there are unregulated materials in the inner layers of the laminate, they may migrate to food, and therefore be considered unapproved food additives resulting in the food being deemed adulterated under the Federal Food Drug and Cosmetic Act.

  15. Observations of capillary barriers and preferential flow in layered snow during cold laboratory experiments

    NASA Astrophysics Data System (ADS)

    Avanzi, Francesco; Hirashima, Hiroyuki; Yamaguchi, Satoru; Katsushima, Takafumi; De Michele, Carlo

    2016-09-01

    Data of liquid water flow around a capillary barrier in snow are still limited. To gain insight into this process, we carried out observations of dyed water infiltration in layered snow at 0 °C during cold laboratory experiments. We considered three different finer-over-coarser textures and three different water input rates. By means of visual inspection, horizontal sectioning, and measurements of liquid water content (LWC), capillary barriers and associated preferential flow were characterized. The flow dynamics of each sample were also simulated solving the Richards equation within the 1-D multi-layer physically based snow cover model SNOWPACK. Results revealed that capillary barriers and preferential flow are relevant processes ruling the speed of water infiltration in stratified snow. Both are marked by a high degree of spatial variability at centimeter scale and complex 3-D patterns. During unsteady percolation of water, observed peaks in bulk volumetric LWC at the interface reached ˜ 33-36 vol % when the upper layer was composed by fine snow (grain size smaller than 0.5 mm). However, LWC might locally be greater due to the observed heterogeneity in the process. Spatial variability in water transmission increases with grain size, whereas we did not observe a systematic dependency on water input rate for samples containing fine snow. The comparison between observed and simulated LWC profiles revealed that the implementation of the Richards equation reproduces the existence of a capillary barrier for all observed cases and yields a good agreement with observed peaks in LWC at the interface between layers.

  16. Formation of color centers in a thin layer of LiF crystals under VUV radiation from a barrier discharge

    NASA Astrophysics Data System (ADS)

    Milyutina, E. V.; Petrovskii, A. F.; Rakevich, A. L.; Martynovich, E. F.

    2014-05-01

    Under radiation from a barrier discharge, luminescent color centers are formed in a surface layer of lithium fluoride crystal served as a dielectric barrier. Analysis of the damping kinetics and luminescence spectra has revealed these centers to be F {3/+} and F 2 centers. Structural defects are mainly formed via the photon-induced mechanism (i.e., defects are formed due to the generation of electron-hole pairs as a result of absorption of photons of barrier-discharge radiation). Barrier discharge in different gases can be successfully used to form thin layers containing luminescence centers on the surface of transparent insulators for various scientific and practical applications.

  17. Morphological instability of Ag films caused by phase transition in the underlying Ta barrier layer

    SciTech Connect

    Mardani, Shabnam Vallin, Örjan; Wätjen, Jörn Timo; Norström, Hans; Olsson, Jörgen; Zhang, Shi-Li

    2014-08-18

    Wide-bandgap (WBG) semiconductor technologies are maturing and may provide increased device performance in many fields of applications, such as high-temperature electronics. However, there are still issues regarding the stability and reliability of WBG devices. Of particular importance is the high-temperature stability of interconnects for electronic systems based on WBG-semiconductors. For metallization without proper encapsulation, morphological degradation can occur at elevated temperatures. Sandwiching Ag films between Ta and/or TaN layers in this study is found to be electrically and morphologically stabilize the Ag metallization up to 800 °C, compared to 600 °C for uncapped films. However, the barrier layer plays a key role and TaN is found to be superior to Ta, resulting in the best achieved stability, whereas the difference between Ta and TaN caps is negligible. The β-to-α phase transition in the underlying Ta barrier layer is identified as the major cause responsible for the morphological instability observed above 600 °C. It is shown that this phase transition can be avoided using a stacked Ta/TaN barrier.

  18. Surface passivation and interface properties of bulk GaAs and epitaxial-GaAs/Ge using atomic layer deposited TiAlO alloy dielectric.

    PubMed

    Dalapati, G K; Chia, C K; Tan, C C; Tan, H R; Chiam, S Y; Dong, J R; Das, A; Chattopadhyay, S; Mahata, C; Maiti, C K; Chi, D Z

    2013-02-01

    High quality surface passivation on bulk-GaAs substrates and epitaxial-GaAs/Ge (epi-GaAs) layers were achieved by using atomic layer deposited (ALD) titanium aluminum oxide (TiAlO) alloy dielectric. The TiAlO alloy dielectric suppresses the formation of defective native oxide on GaAs layers. X-ray photoelectron spectroscopy (XPS) analysis shows interfacial arsenic oxide (As(x)O(y)) and elemental arsenic (As) were completely removed from the GaAs surface. Energy dispersive X-ray diffraction (EDX) analysis and secondary ion mass spectroscopy (SIMS) analysis showed that TiAlO dielectric is an effective barrier layer for reducing the out-diffusion of elemental atoms, enhancing the electrical properties of bulk-GaAs based metal-oxide-semiconductor (MOS) devices. Moreover, ALD TiAlO alloy dielectric on epi-GaAs with AlGaAs buffer layer realized smooth interface between epi-GaAs layers and TiAlO dielectric, yielding a high quality surface passivation on epi-GaAs layers, much sought-after for high-speed transistor applications on a silicon platform. Presence of a thin AlGaAs buffer layer between epi-GaAs and Ge substrates improved interface quality and gate dielectric quality through the reduction of interfacial layer formation (Ga(x)O(y)) and suppression of elemental out-diffusion (Ga and As). The AlGaAs buffer layer and TiAlO dielectric play a key role to suppress the roughening, interfacial layer formation, and impurity diffusion into the dielectric, which in turn largely enhances the electrical property of the epi-GaAs MOS devices.

  19. Laboratory-based observations of capillary barriers and preferential flow in layered snow

    NASA Astrophysics Data System (ADS)

    Avanzi, F.; Hirashima, H.; Yamaguchi, S.; Katsushima, T.; De Michele, C.

    2015-12-01

    Several evidences are nowadays available that show how the effects of capillary gradients and preferential flow on water transmission in snow may play a more important role than expected. To observe these processes and to contribute in their characterization, we performed observations on the development of capillary barriers and preferential flow patterns in layered snow during cold laboratory experiments. We considered three different layering (all characterized by a finer-over-coarser texture in grain size) and three different water input rates. Nine samples of layered snow were sieved in a cold laboratory, and subjected to a constant supply of dyed tracer. By means of visual inspection, horizontal sectioning and liquid water content measurements, the processes of ponding and preferential flow were characterized as a function of texture and water input rate. The dynamics of each sample were replicated using the multi-layer physically-based SNOWPACK model. Results show that capillary barriers and preferential flow are relevant processes ruling the speed of liquid water in stratified snow. Ponding is associated with peaks in LWC at the boundary between the two layers equal to ~ 33-36 vol. % when the upper layer is composed by fine snow (grain size smaller than 0.5 mm). The thickness of the ponding layer at the textural boundary is between 0 and 3 cm, depending on sample stratigraphy. Heterogeneity in water transmission increases with grain size, while we do not observe any clear dependency on water input rate. The extensive comparison between observed and simulated LWC profiles by SNOWPACK (using an approximation of Richards Equation) shows high performances by the model in estimating the LWC peak over the boundary, while water speed in snow is underestimated by the chosen water transport scheme.

  20. In2O3 nanocrystal memory with the barrier engineered tunnel layer.

    PubMed

    Lee, Dong Uk; Kim, Seon Pil; Han, Dong Seok; Kim, Eun Kyu; Park, Goon-Ho; Cho, Won-Ju; Kim, Young-Ho

    2011-01-01

    In2O3 nanocrystal memories with barrier-engineered tunnel layers were fabricated on a p-type Si substrate. The structure and thickness of the barrier-engineered tunnel layers were SiO2/Si3N4/SiO2 (ONO) and 2/2/3 nm, respectively. The equivalent oxide thickness of the ONO tunnel layers was 5.64 nm. The average size and density of the In2O3 nanocrystals after the reaction between BPDA-PDA polyimide and the In thin film were about 8 nm and 4 x 10(11) cm(-2), respectively. The electrons were charged from the channel of the memory device to the quantum well of the In2O3 nanocrystal through the ONO tunnel layer via Fowler-Nordheim tunneling. The memory window was about 1.4 V when the program and erase conditions of the In2O3 nanocrystal memory device were 12 V for 1 s and -15 V for 200 ms.

  1. Characterization of the dark current of a quantum well infrared photodetector (QWIP) with selectively doped barrier layers

    NASA Astrophysics Data System (ADS)

    Uchiyama, Yasuhito; Nishino, Hironori; Matsukura, Yusuke; Miyatake, Tetsuya; Yamamoto, Kousaku; Fujii, Toshio

    2002-08-01

    We investigated the behavior of the dark current (Id) in quantum well infrared photodetectors (QWIPs) in which the barrier layers were selectively doped instead of the well layers. Because the selective doping bends the conduction band (CB) edge in the portion of the barrier near the interface, the mechanism by which carriers in the wells can be emitted over the barriers, i.e. thermal emission and tunneling through this portion of the barrier, could be emphasized. We first confirmed that selectively doping the barrier layers clearly affects the Id-V characteristics. Then, by evaluating the activation energy obtained from the temperature dependence of Id, we found that the Poole-Frenkel emission (PFE) mechanism and the thermal-assisted tunneling (TAT)-like mechanism are dominant in the lower bias and higher bias regions, respectively.

  2. Ultrathin epitaxial barrier layer to avoid thermally induced phase transformation in oxide heterostructures

    SciTech Connect

    Baek, David J.; Lu, Di; Hikita, Yasuyuki; Hwang, Harold Y.; Kourkoutis, Lena F.

    2016-12-22

    Incorporating oxides with radically different physical and chemical properties into heterostructures offers tantalizing possibilities to derive new functions and structures. Recently, we have fabricated freestanding 2D oxide membranes using the water-soluble perovskite Sr3Al2O6 as a sacrificial buffer layer. Here, with atomic-resolution spectroscopic imaging, we observe that direct growth of oxide thin films on Sr3Al2O6 can cause complete phase transformation of the buffer layer, rendering it water-insoluble. More importantly, we demonstrate that an ultrathin SrTiO3 layer can be employed as an effective barrier to preserve Sr3Al2O6 during subsequent growth, thus allowing its integration in a wider range of oxide heterostructures.

  3. Ultrathin epitaxial barrier layer to avoid thermally induced phase transformation in oxide heterostructures

    DOE PAGES

    Baek, David J.; Lu, Di; Hikita, Yasuyuki; ...

    2016-12-22

    Incorporating oxides with radically different physical and chemical properties into heterostructures offers tantalizing possibilities to derive new functions and structures. Recently, we have fabricated freestanding 2D oxide membranes using the water-soluble perovskite Sr3Al2O6 as a sacrificial buffer layer. Here, with atomic-resolution spectroscopic imaging, we observe that direct growth of oxide thin films on Sr3Al2O6 can cause complete phase transformation of the buffer layer, rendering it water-insoluble. More importantly, we demonstrate that an ultrathin SrTiO3 layer can be employed as an effective barrier to preserve Sr3Al2O6 during subsequent growth, thus allowing its integration in a wider range of oxide heterostructures.

  4. Significance of thermal contact resistance in two-layer thermal-barrier-coated turbine vanes

    NASA Technical Reports Server (NTRS)

    Liebert, C. H.; Gaugler, R. E.

    1980-01-01

    The importance of thermal contact resistance between layers in heat transfer through two layer, plasma sprayed, thermal barrier coatings applied to turbine vanes was investigated. Results obtained with a system of NiCrAlY bond and yttria stabilized zirconia ceramic show that thermal contact resistance between layers is negligible. These results also verified other studies which showed that thermal contact resistance is negligible for a different coating system of NiCr bond calcia stabilized zirconia ceramic. The zirconia stabilized ceramic thermal conductivity data scatter presented in the literature is ?20 to -10 percent about a curve fit of the data. More accurate predictions of heat transfer and metal wall temperatures are obtained when the thermal conductivity values are used at the ?20 percent level.

  5. Improvement in mechanical and barrier properties of polyethylene blown films using atomic layer deposition

    SciTech Connect

    Lee, Gyeong Beom; Hak Song, Seung; Wook Moon, Sung; Woo Kim, Jun; Hyung Shim, Joon; Choi, Byoung-Ho; Moo Heo, Young

    2014-01-15

    Recently, thin films deposited on polymer substrates have been widely utilized as encapsulation barriers in electronic applications such as flexible displays, packaging films, and organic light-emitting diodes. The barrier and mechanical properties of these films are critical aspects when using them for protecting the inner modules of electronic devices from environmental factors such as moisture, oxygen, and sunlight. In particular, polymers can be degraded or decomposed more easily than other materials under such environmental conditions. Therefore, polymer films can be deposited using thin functional materials; however, suitable deposition methods for polymers are scarce owing to many limitations such as low melting/glass transition temperature, thermal degradation, and oxidation. In this study, a thin alumina oxide film was deposited on a high-density polyethylene blown film by using atomic layer deposition. The mechanical and barrier properties of the alumina oxide film deposited on the polyethylene film were characterized by a microtensile test and water vapor transmission rate test. Process conditions such as process temperature, plasma surface treatment, and number of cycles were varied to ascertain the reliability of the thin alumina oxide film deposited on the high-density polyethylene blown film. The results showed that the barrier property of the deposited film improved upon the application of plasma surface treatment, and that its mechanical properties varied under different process conditions.

  6. Intermediate type excitons in Schottky barriers of A3B6 layer semiconductors and UV photodetectors

    NASA Astrophysics Data System (ADS)

    Alekperov, O. Z.; Guseinov, N. M.; Nadjafov, A. I.

    2006-09-01

    Photoelectric and photovoltaic spectra of Schottky barrier (SB) structures of InSe, GaSe and GaS layered semiconductors (LS) are investigated at quantum energies from the band edge excitons of corresponding materials up to 6.5eV. Spectral dependences of photoconductivity (PC) of photo resistors and barrier structures are strongly different at the quantum energies corresponding to the intermediate type excitons (ITE) observed in these semiconductors. It was suggested that high UV photoconductivity of A3B6 LS is due to existence of high mobility light carriers in the depth of the band structure. It is shown that SB of semitransparent Au-InSe is high sensitive photo detector in UV region of spectra.

  7. Barrier enhancement of Ge MSM IR photodetector with Ge layer optimization

    NASA Astrophysics Data System (ADS)

    Asar, Tarık; Özçelik, Süleyman

    2015-12-01

    Germanium thin films were deposited on n-type Silicon substrates with three different sputter power by using DC magnetron sputtering system at room temperature. The structural and morphological properties of the samples have been obtained by means of X-ray diffraction and atomic force microscopy measurements. Then, Germanium metal-semiconductor-metal infrared photodetectors were fabricated on these structures. The carrier recombination lifetime and the diffusion length of the devices were also calculated by using the carrier density and mobility data was obtained from the room temperature Hall Effect measurements. The dark current-voltage measurements of devices were achieved at room temperature. The electrical parameters such as ideality factor, Schottky barrier height, saturation current and series resistance were extracted from dark current-voltage characteristics. Finally, it has been shown that the barrier enhancement of Ge MSM IR photodetector can be achieved by Ge layer optimization.

  8. Role of Arsenic During Aluminum Droplet Etching of Nanoholes in AlGaAs.

    PubMed

    Heyn, Christian; Zocher, Michel; Schnüll, Sandra; Hansen, Wolfgang

    2016-12-01

    Self-assembled nanoholes are drilled into (001) AlGaAs surfaces during molecular beam epitaxy (MBE) using local droplet etching (LDE) with Al droplets. It is known that this process requires a small amount of background arsenic for droplet material removal. The present work demonstrates that the As background can be supplied by both a small As flux to the surface as well as by the topmost As layer in an As-terminated surface reconstruction acting as a reservoir. We study the temperature-dependent evaporation of the As topmost layer with in situ electron diffraction and determine an activation energy of 2.49 eV. After thermal removal of the As topmost layer droplet etching is studied under well-defined As supply. We observe with decreasing As flux four regimes: planar growth, uniform nanoholes, non-uniform holes, and droplet conservation. The influence of the As supply is discussed quantitatively on the basis of a kinetic rate model.

  9. Role of Arsenic During Aluminum Droplet Etching of Nanoholes in AlGaAs

    NASA Astrophysics Data System (ADS)

    Heyn, Christian; Zocher, Michel; Schnüll, Sandra; Hansen, Wolfgang

    2016-09-01

    Self-assembled nanoholes are drilled into (001) AlGaAs surfaces during molecular beam epitaxy (MBE) using local droplet etching (LDE) with Al droplets. It is known that this process requires a small amount of background arsenic for droplet material removal. The present work demonstrates that the As background can be supplied by both a small As flux to the surface as well as by the topmost As layer in an As-terminated surface reconstruction acting as a reservoir. We study the temperature-dependent evaporation of the As topmost layer with in situ electron diffraction and determine an activation energy of 2.49 eV. After thermal removal of the As topmost layer droplet etching is studied under well-defined As supply. We observe with decreasing As flux four regimes: planar growth, uniform nanoholes, non-uniform holes, and droplet conservation. The influence of the As supply is discussed quantitatively on the basis of a kinetic rate model.

  10. Properties of barrier contacts with nanosize TiB{sub x} layers to InP

    SciTech Connect

    Arsentyev, I. N. Bobyl, A. V.; Tarasov, I. S.; Boltovets, N. S. Ivanov, V. N.; Belyaev, A. E.; Kamalov, A. B.; Konakova, R. V. Kudryk, Ya. Ya.; Lytvyn, O. S.; Milenin, V. V.; Russu, E. V.

    2008-07-15

    Structural and electrical properties of Au-TiB{sub x}-nn{sup +}n{sup ++}-InP and TiB{sub x}-nn{sup +}n{sup ++}-InP multilayer barrier structures on standard ('rigid') and soft ('porous')n{sup ++}-InP substrates have been studied, with the semiconductor layers deposited by vapor-phase epitaxy, metallic layers formed by magnetron sputtering, and porous substrates fabricated by electrochemical etching of the standard InP. Samples on porous substrates have the following advantages: leakage currents in their reverse current-voltage characteristics are ten times lower; the range of the exponential rise in current in the forward characteristics is an order of magnitude wider; the changes in the ideality factor and the Schottky barrier height, observed as the contact area varies by a factor of 100, are three and {approx}10 times smaller, respectively; and the structure of the layers is more stable in annealing at up to 800{sup o}C.

  11. Surface-barrier photoconverters with graded-gap layers in the space-charge region

    SciTech Connect

    Bobrenko, Yu. N.; Pavelets, S. Yu. Pavelets, A. M.; Semikina, T. V.; Yaroshenko, N. V.

    2015-04-15

    A novel possibility of controlling the parameters of p-Cu{sub 1.8}S-n-II-VI surface-barrier structures by embedding a thin graded-gap layer into a photoconverter space-charge region (SCR) is implemented. The feature of quasi-electric fields built in the SCR, i.e., the fact that an increase in the drift field for minority carriers can be accompanied by a decrease in the potential barrier for majority carriers, is considered. The proper choice of the parameters of the Cd{sub x}Zn{sub 1−x}S graded-gap layer embedded in the Cu{sub 1.8}S-ZnS structure SCR made it possible to double the quantum efficiency in the ultraviolet spectral region. For Cu{sub 1.8}S-CdS photoconverters with a (CdS){sub x}(ZnSe){sub 1−x} intermediate layer, dark diode currents are decreased by three orders of magnitude while retaining a high quantum efficiency.

  12. Fabrication of metallic single electron transistors featuring plasma enhanced atomic layer deposition of tunnel barriers

    NASA Astrophysics Data System (ADS)

    Karbasian, Golnaz

    The continuing increase of the device density in integrated circuits (ICs) gives rise to the high level of power that is dissipated per unit area and consequently a high temperature in the circuits. Since temperature affects the performance and reliability of the circuits, minimization of the energy consumption in logic devices is now the center of attention. According to the International Technology Roadmaps for Semiconductors (ITRS), single electron transistors (SETs) hold the promise of achieving the lowest power of any known logic device, as low as 1x10-18 J per switching event. Moreover, SETs are the most sensitive electrometers to date, and are capable of detecting a fraction of an electron charge. Despite their low power consumption and high sensitivity for charge detection, room temperature operation of these devices is quite challenging mainly due to lithographical constraints in fabricating structures with the required dimensions of less than 10 nm. Silicon based SETs have been reported to operate at room temperature. However, they all suffer from significant variation in batch-to-batch performance, low fabrication yield, and temperature-dependent tunnel barrier height. In this project, we explored the fabrication of SETs featuring metal-insulator-metal (MIM) tunnel junctions. While Si-based SETs suffer from undesirable effect of dopants that result in irregularities in the device behavior, in metal-based SETs the device components (tunnel barrier, island, and the leads) are well-defined. Therefore, metal SETs are potentially more predictable in behavior, making them easier to incorporate into circuits, and easier to check against theoretical models. Here, the proposed fabrication method takes advantage of unique properties of chemical mechanical polishing (CMP) and plasma enhanced atomic layer deposition (PEALD). Chemical mechanical polishing provides a path for tuning the dimensions of the tunnel junctions, surpassing the limits imposed by electron beam

  13. The explanation of barrier height inhomogeneities in Au/n-Si Schottky barrier diodes with organic thin interfacial layer

    NASA Astrophysics Data System (ADS)

    Taşçıoǧlu, Ilke; Aydemir, Umut; Altındal, Şemsettin

    2010-09-01

    The forward bias current-voltage (I-V) characteristics of Au/n-Si Schottky barrier diodes (SBDs) with Zn doped poly(vinyl alcohol) (PVA:Zn) interfacial layer have been investigated in the wide temperature range of 80-400 K. The conventional Richardson plot of the ln(Io/T2) versus q /kT has two linear regions: the first region (200-400 K) and the second region (80-170 K). The values of activation energy (Ea) and Richardson constant (A∗) were obtained from this plot and especially the values of A∗ are much lower than the known theoretical value for n-type Si. Also the value of Ea is almost equal to the half of the band gap energy of Si. Therefore, the Φap versus q /2kT plot was drawn to obtain the evidence of a Gaussian distribution (GD) of barrier heights (BHs) and it shows two linear region similar to ln(Io)/T2 versus q /kT plot. The analysis of I-V data based on thermionic emission of the Au/PVA:Zn/n-Si SBDs has revealed the existence of double GD with mean BH values (Φ¯B0) of 1.06 eV and 0.86 eV with standard deviation (σ ) of 0.110 eV and 0.087 V, respectively. Thus, we modified ln(Io/T2)-(qσ)2/2(kT)2 versus q /kT plot for two temperature regions (200-400 K and 80-170 K) and it gives renewed mean BHs Φ¯B0 values as 1.06 eV and 0.85 eV with Richardson constant (A∗) values 121 A/cm2 K2 and 80.4 A/cm2 K2, respectively. This obtained value of A∗=121 A/cm2 K2 is very close to the known theoretical value of 120 A/cm2 K2 for n-type Si.

  14. Growth and characterization of GaAs, AlGaAs and their heterostructures by organometallic vapor phase epitaxy

    SciTech Connect

    Shealy, J.R.

    1983-01-01

    Organometallic Vapor Phase Epitaxy (OMVPE) is a cold wall vapor desposition technique using organometallic and/or hydride sources for the fabrication of a variety of epitaxial compound semiconductor alloys on suitable substrates. The use of the OMVPE process to produce high quality GaAs, AlGaAs, and their heterostructures on GaAs substrates using trimethygalium (TMG), trimethylalumium (TMA), and arsine is described. For GaAs epitaxial films, the unintentional residual donor sand acceptors have been identified using far-infrared photo-ionization data, and low temperature photoluminescence, respectively, and their concentrations have been evaluated using Hall data. For the growth of AlGaAs films, it was observed that poor quality films were obtained due to oxygen contamination of the layer during growth. A series of graded bandgap heterostructures and abrupt quantum well heterostructures were grown over a variety of growth conditions. Composition gradings were controlled over a full range of alloy compositions on distances as small as 500 - 1000 A, and a 40 A quantum well heterostructure was obtained at low growth temperatures (550/sup 0/C). Finally, results are presented on a few devices which incorporate metallurgical junctions and heterojunctions with the GaAs/AlGaAs system. These devices include a microwave vertical FET structure, graded bandgap solar cells, and light emitting diodes.

  15. Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition

    SciTech Connect

    Hoffmann, Lukas Theirich, Detlef; Hasselmann, Tim; Räupke, André; Schlamm, Daniel; Riedl, Thomas

    2016-01-15

    This paper reports on aluminum oxide (Al{sub 2}O{sub 3}) thin film gas permeation barriers fabricated by atmospheric pressure atomic layer deposition (APPALD) using trimethylaluminum and an Ar/O{sub 2} plasma at moderate temperatures of 80 °C in a flow reactor. The authors demonstrate the ALD growth characteristics of Al{sub 2}O{sub 3} films on silicon and indium tin oxide coated polyethylene terephthalate. The properties of the APPALD-grown layers (refractive index, density, etc.) are compared to that deposited by conventional thermal ALD at low pressures. The films films deposited at atmospheric pressure show water vapor transmission rates as low as 5 × 10{sup −5} gm{sup −2}d{sup −1}.

  16. A three-terminal ultraviolet photodetector constructed on a barrier-modulated triple-layer architecture

    PubMed Central

    Ye, Daqian; Mei, Zengxia; Liang, Huili; liu, Lishu; Zhang, Yonghui; Li, Junqiang; Liu, Yaoping; Gu, Changzhi; Du, Xiaolong

    2016-01-01

    We report a novel three-terminal device fabricated on MgZnO/ZnO/MgZnO triple-layer architecture. Because of the combined barrier modulation effect by both gate and drain biases, the device shows an unconventional I–V characteristics compared to a common field effect transistor. The photoresponse behavior of this unique device was also investigated and applied in constructing a new type ultraviolet (UV) photodetector, which may be potentially used as an active element in a UV imaging array. More significantly, the proper gate bias-control offers a new pathway to overcome the common persistent photoconductivity (PPC) effect problem. Additionally, the MgZnO:F as a channel layer was chosen to optimize the photoresponse properties, and the spectrum indicated a gate bias-dependent wavelength-selectable feature for different response peaks, which suggests the possibility to build a unique dual-band UV photodetector with this new architecture. PMID:27181255

  17. AlGaAs diode pumped tunable chromium lasers

    DOEpatents

    Krupke, William F.; Payne, Stephen A.

    1992-01-01

    An all-solid-state laser system is disclosed wherein the laser is pumped in the longwave wing of the pump absorption band. By utilizing a laser material that will accept unusually high dopant concentrations without deleterious effects on the crystal lattice one is able to compensate for the decreased cross section in the wing of the absorption band, and the number of pump sources which can be used with such a material increases correspondingly. In a particular embodiment a chromium doped colquiriite-structure crystal such as Cr:LiSrAlF.sub.6 is the laser material. The invention avoids the problems associated with using AlGaInP diodes by doping the Cr:LiSrAlF.sub.6 heavily to enable efficient pumping in the longwave wing of the absorption band with more practical AlGaAs diodes.

  18. A finite difference analysis of the field present behind an acoustically impenetrable two-layer barrier.

    PubMed

    Hurrell, Andrew M

    2008-06-01

    The interaction of an incident sound wave with an acoustically impenetrable two-layer barrier is considered. Of particular interest is the presence of several acoustic wave components in the shadow region of this barrier. A finite difference model capable of simulating this geometry is validated by comparison to the analytical solution for an idealized, hard-soft barrier. A panel comprising a high air-content closed cell foam backed with an elastic (metal) back plate is then examined. The insertion loss of this panel was found to exceed the dynamic range of the measurement system and was thus acoustically impenetrable. Experimental results from such a panel are shown to contain artifacts not present in the diffraction solution, when acoustic waves are incident upon the soft surface. A finite difference analysis of this experimental configuration replicates the presence of the additional field components. Furthermore, the simulated results allow the additional components to be identified as arising from the S(0) and A(0) Lamb modes traveling in the elastic plate. These Lamb mode artifacts are not found to be present in the shadow region when the acoustic waves are incident upon the elastic surface.

  19. State diagnostics of RTD based on nanoscale multilayered AlGaAs heterostructures

    NASA Astrophysics Data System (ADS)

    Makeev, M. O.; Meshkov, S. A.; Sinyakin, V. Yu

    2016-08-01

    In the present work the problems of technical diagnostics of RTD based on nanoscale multilayered AlGaAs heterostructures are being solved. The technique and the algorithms of RTD functionality region developing are being considered.

  20. Ultrathin, transferred layers of thermally grown silicon dioxide as biofluid barriers for biointegrated flexible electronic systems

    PubMed Central

    Fang, Hui; Yu, Ki Jun; Song, Enming; Farimani, Amir Barati; Chiang, Chia-Han; Jin, Xin; Xu, Dong; Du, Wenbo; Seo, Kyung Jin; Zhong, Yiding; Yang, Zijian; Won, Sang Min; Fang, Guanhua; Choi, Seo Woo; Chaudhuri, Santanu; Huang, Yonggang; Alam, Muhammad Ashraful; Viventi, Jonathan; Aluru, N. R.; Rogers, John A.

    2016-01-01

    Materials that can serve as long-lived barriers to biofluids are essential to the development of any type of chronic electronic implant. Devices such as cardiac pacemakers and cochlear implants use bulk metal or ceramic packages as hermetic enclosures for the electronics. Emerging classes of flexible, biointegrated electronic systems demand similar levels of isolation from biofluids but with thin, compliant films that can simultaneously serve as biointerfaces for sensing and/or actuation while in contact with the soft, curved, and moving surfaces of target organs. This paper introduces a solution to this materials challenge that combines (i) ultrathin, pristine layers of silicon dioxide (SiO2) thermally grown on device-grade silicon wafers, and (ii) processing schemes that allow integration of these materials onto flexible electronic platforms. Accelerated lifetime tests suggest robust barrier characteristics on timescales that approach 70 y, in layers that are sufficiently thin (less than 1 μm) to avoid significant compromises in mechanical flexibility or in electrical interface fidelity. Detailed studies of temperature- and thickness-dependent electrical and physical properties reveal the key characteristics. Molecular simulations highlight essential aspects of the chemistry that governs interactions between the SiO2 and surrounding water. Examples of use with passive and active components in high-performance flexible electronic devices suggest broad utility in advanced chronic implants. PMID:27791052

  1. Ultrathin, transferred layers of thermally grown silicon dioxide as biofluid barriers for biointegrated flexible electronic systems.

    PubMed

    Fang, Hui; Zhao, Jianing; Yu, Ki Jun; Song, Enming; Farimani, Amir Barati; Chiang, Chia-Han; Jin, Xin; Xue, Yeguang; Xu, Dong; Du, Wenbo; Seo, Kyung Jin; Zhong, Yiding; Yang, Zijian; Won, Sang Min; Fang, Guanhua; Choi, Seo Woo; Chaudhuri, Santanu; Huang, Yonggang; Alam, Muhammad Ashraful; Viventi, Jonathan; Aluru, N R; Rogers, John A

    2016-10-18

    Materials that can serve as long-lived barriers to biofluids are essential to the development of any type of chronic electronic implant. Devices such as cardiac pacemakers and cochlear implants use bulk metal or ceramic packages as hermetic enclosures for the electronics. Emerging classes of flexible, biointegrated electronic systems demand similar levels of isolation from biofluids but with thin, compliant films that can simultaneously serve as biointerfaces for sensing and/or actuation while in contact with the soft, curved, and moving surfaces of target organs. This paper introduces a solution to this materials challenge that combines (i) ultrathin, pristine layers of silicon dioxide (SiO2) thermally grown on device-grade silicon wafers, and (ii) processing schemes that allow integration of these materials onto flexible electronic platforms. Accelerated lifetime tests suggest robust barrier characteristics on timescales that approach 70 y, in layers that are sufficiently thin (less than 1 μm) to avoid significant compromises in mechanical flexibility or in electrical interface fidelity. Detailed studies of temperature- and thickness-dependent electrical and physical properties reveal the key characteristics. Molecular simulations highlight essential aspects of the chemistry that governs interactions between the SiO2 and surrounding water. Examples of use with passive and active components in high-performance flexible electronic devices suggest broad utility in advanced chronic implants.

  2. Effectiveness of compacted soil liner as a gas barrier layer in the landfill final cover system.

    PubMed

    Moon, Seheum; Nam, Kyoungphile; Kim, Jae Young; Hwan, Shim Kyu; Chung, Moonkyung

    2008-01-01

    A compacted soil liner (CSL) has been widely used as a single barrier layer or a part of composite barrier layer in the landfill final cover system to prevent water infiltration into solid wastes for its acceptable hydraulic permeability. This study was conducted to test whether the CSL was also effective in prohibiting landfill gas emissions. For this purpose, three different compaction methods (i.e., reduced, standard, and modified Proctor methods) were used to prepare the soil specimens, with nitrogen as gas, and with water and heptane as liquid permeants. Measured gas permeability ranged from 2.03 x 10(-10) to 4.96 x 10(-9) cm(2), which was a magnitude of two or three orders greater than hydraulic permeability (9.60 x 10(-13) to 1.05 x 10(-11) cm(2)). The difference between gas and hydraulic permeabilities can be explained by gas slippage, which makes gas more permeable, and by soil-water interaction, which impedes water flow and then makes water less permeable. This explanation was also supported by the result that a liquid permeability measured with heptane as a non-polar liquid was similar to the intrinsic gas permeability. The data demonstrate that hydraulic requirement for the CSL is not enough to control the gas emissions from a landfill.

  3. Ultrathin, transferred layers of thermally grown silicon dioxide as biofluid barriers for biointegrated flexible electronic systems

    NASA Astrophysics Data System (ADS)

    Fang, Hui; Zhao, Jianing; Yu, Ki Jun; Song, Enming; Barati Farimani, Amir; Chiang, Chia-Han; Jin, Xin; Xue, Yeguang; Xu, Dong; Du, Wenbo; Seo, Kyung Jin; Zhong, Yiding; Yang, Zijian; Won, Sang Min; Fang, Guanhua; Choi, Seo Woo; Chaudhuri, Santanu; Huang, Yonggang; Ashraful Alam, Muhammad; Viventi, Jonathan; Aluru, N. R.; Rogers, John A.

    2016-10-01

    Materials that can serve as long-lived barriers to biofluids are essential to the development of any type of chronic electronic implant. Devices such as cardiac pacemakers and cochlear implants use bulk metal or ceramic packages as hermetic enclosures for the electronics. Emerging classes of flexible, biointegrated electronic systems demand similar levels of isolation from biofluids but with thin, compliant films that can simultaneously serve as biointerfaces for sensing and/or actuation while in contact with the soft, curved, and moving surfaces of target organs. This paper introduces a solution to this materials challenge that combines (i) ultrathin, pristine layers of silicon dioxide (SiO2) thermally grown on device-grade silicon wafers, and (ii) processing schemes that allow integration of these materials onto flexible electronic platforms. Accelerated lifetime tests suggest robust barrier characteristics on timescales that approach 70 y, in layers that are sufficiently thin (less than 1 μm) to avoid significant compromises in mechanical flexibility or in electrical interface fidelity. Detailed studies of temperature- and thickness-dependent electrical and physical properties reveal the key characteristics. Molecular simulations highlight essential aspects of the chemistry that governs interactions between the SiO2 and surrounding water. Examples of use with passive and active components in high-performance flexible electronic devices suggest broad utility in advanced chronic implants.

  4. Response of upper ocean and impact of barrier layer on Sidr cyclone induced sea surface cooling

    NASA Astrophysics Data System (ADS)

    Vissa, Naresh Krishna; Satyanarayana, A. N. V.; Kumar, B. Prasad

    2013-09-01

    In the present study an attempt has been made to investigate the impact of salinity stratification on the SST during the tropical cyclone (TC) passage. In this context, a severe post monsoon cyclone, Sidr, (Category 4) that developed over the south-eastern Bay of Bengal (BoB) during 11-16 November, 2007 was chosen as a case study. Pre-existence of a thick barrier layer (BL), temperature inversions and a higher effective oceanic layer for cyclogenesis (EOLC) were noticed along the path of the Sidr cyclone. The analysis of available Argo floats along the Sidr cyclone track also revealed less cooling during as well as after its passage as was reported from satellite derived SST. The role of BL on Sidr induced sea surface cooling was investigated using a diagnostic mixed layer model. Model results also depict the reduced sea surface cooling during the passage of Sidr. This is attributed to the presence of BL which results in the inhibition of the entrainment of cool thermocline water into the shallow mixed layer. Climatological as well as in situ observations of tropical cyclone heat potential (TCHP) and EOLC shows that the Sidr cyclone propagated towards the regions of higher EOLC.

  5. Atomic and electronic structure of ultrathin fluoride barrier layers at the oxide/Si interface

    NASA Astrophysics Data System (ADS)

    Pasquali, L.; Montecchi, M.; Nannarone, S.; Boscherini, F.

    2011-09-01

    A SrF2 ultrathin barrier layer on Si(001) is used to form a sharp interface and block reactivity and intermixing between the semiconductor and a Yb2O3 overlayer. Yb2O3/Si(001) and Yb2O3/SrF2/Si(001) interfaces grown in ultra high vacuum by molecular beam epitaxy are studied by photoemission and x-ray absorption fine structure. Without the fluoride interlayer, Yb2O3/Si(001) presents an interface reacted region formed by SiOx and/or silicate compounds, which is about 9 Å thick and increases up to 14-15 Å after annealing at 500-700 °C. A uniform single layer of SrF2 molecules blocks intermixing and reduces the oxidized Si region to 2.4 Å after deposition and to 3.5 Å after annealing at 500 °C. In both cases we estimate a conduction band offset and a valence band offset of ~ 1.7 eV and 2.4 eV between the oxide and Si, respectively. X-ray absorption fine structure measurements at the Yb LIII edge suggest that the Yb oxide films exhibit a significant degree of static disorder with and without the fluoride barrier. Sr K edge measurements indicate that the ultrathin fluoride films are reacted, with the formation of bonds between Si and Sr; the Sr-Sr and Sr-F interatomic distances in the ultrathin fluoride barrier film are relaxed to the bulk value.

  6. Effect of a multi-layer infection control barrier on the micro-hardness of a composite resin

    PubMed Central

    HWANG, In-Nam; HONG, Sung-Ok; LEE, Bin-Na; HWANG, Yun-Chan; OH, Won-Mann; CHANG, Hoon-Sang

    2012-01-01

    Objective The aim of this study was to evaluate the effect of multiple layers of an infection control barrier on the micro-hardness of a composite resin. Material and Methods One, two, four, and eight layers of an infection control barrier were used to cover the light guides of a high-power light emitting diode (LED) light curing unit (LCU) and a low-power halogen LCU. The composite specimens were photopolymerized with the LCUs and the barriers, and the micro-hardness of the upper and lower surfaces was measured (n=10). The hardness ratio was calculated by dividing the bottom surface hardness of the experimental groups by the irradiated surface hardness of the control groups. The data was analyzed by two-way ANOVA and Tukey's HSD test. Results The micro-hardness of the composite specimens photopolymerized with the LED LCU decreased significantly in the four- and eight-layer groups of the upper surface and in the two-, four-, and eight-layer groups of the lower surface. The hardness ratio of the composite specimens was <80% in the eight-layer group. The micro-hardness of the composite specimens photopolymerized with the halogen LCU decreased significantly in the eight-layer group of the upper surface and in the two-, four-, and eight-layer groups of the lower surface. However, the hardness ratios of all the composite specimens photopolymerized with barriers were <80%. Conclusions The two-layer infection control barrier could be used on high-power LCUs without decreasing the surface hardness of the composite resin. However, when using an infection control barrier on the low-power LCUs, attention should be paid so as not to sacrifice the polymerization efficiency. PMID:23138746

  7. Sputter Deposition of Yttrium-Barium Superconductor and Strontium Titanium Oxide Barrier Layer Thin Films

    NASA Astrophysics Data System (ADS)

    Truman, James Kelly

    1992-01-01

    The commercial application of superconducting rm YBa_2Cu_3O_{7 -x} thin films requires the development of deposition methods which can be used to reproducibly deposit films with good superconducting properties on insulating and semiconducting substrates. Sputter deposition is the most popular method to fabricate Y-Ba-Cu-O superconductor thin films, but when used in the standard configuration suffers from a deviation between the compositions of the Y-Ba-Cu-O sputter target and deposited films, which is thought to be primarily due to resputtering of the film by negative ions sputtered from the target. In this study, the negative ions were explicitly identified and were found to consist predominantly O^-. The sputter yield of O^- was found to depend on the Ba compound used in the fabrication of Y -Ba-Cu-O targets and was related to the electronegativity difference between the components. An unreacted mixture of rm Y_2O_3, CuO, and BaF_2 was found to have the lowest O^- yield among targets with Y:Ba:Cu = 1:2:3. The high yield of O^- from rm YBa_2Cu_3O _{7-x} was found to depend on the target temperature and be due to the excess oxygen present. The SIMS negative ion data supported the composition data for sputter-deposited Y-Ba-Cu-O films. Targets using BaF _2 were found to improve the Ba deficiency, the run-to-run irreproducibility and the nonuniformity of the film composition typically found in sputtered Y -Ba-Cu-O films. Superconducting Y-Ba-Cu-O films were formed on SrTiO_3 substrates by post-deposition heat treatment of Y-Ba-Cu-O-F films in humid oxygen. The growth of superconducting rm YBa_2Cu_3O_{7-x}, thin films on common substrates such as sapphire or silicon requires the use of a barrier layer to prevent the deleterious interaction which occurs between Y-Ba-Cu-O films and these substrates. Barrier layers of SrTiO_3 were studied and found to exhibit textured growth with a preferred (111) orientation on (100) Si substrates. However, SrTiO_3 was found to be

  8. Gas Diffusion Barriers Using Atomic Layer Deposition: A New Calcium Test and Polymer Substrate Effects

    NASA Astrophysics Data System (ADS)

    Bertrand, Jacob Andrew

    The increasing demand on available energy resources has led to a desire for more energy efficient devices. The wide use of displays in consumer electronics, such as televisions, cell phones, cameras and computers makes them an ideal target for improvement. Organic light-emitting diodes (OLEDs) are a good candidate to replace traditional Si based devices. However, the low work function metals typically used as electrodes in OLEDs are very reactive with water and oxygen. Ultralow permeability gas diffusion barriers with water vapor transmission rates (WVTRs) as low as <10-6g/(m2*day) are required on the polymers used to fabricate organic electronic and thin film photovoltaic devices. Atomic Layer Deposition (ALD) uses self-limiting surface reactions to deposit thin conformal films. ALD is capable of depositing thin, conformal, high quality barriers. WVTR values as low as ˜5 x 10-5 g/(m2*day) have been measured for Al2O3 ALD films at 38 °C/85% RH using the Ca test with optical transmission probing. The Ca test is a technique with very high sensitivity to measure ultralow WVTRs. This test relies on measuring the oxidation of a Ca metal film by monitoring the change in its optical or electrical properties. However, glass lid control experiments have indicated that the WVTRs measured by the Ca test are limited by H2O permeability through the epoxy seals. Varying results have been reported in the literature using the electrical conductance of Ca to measure permeation. In this work, two approaches were applied to overcome the epoxy edge seal limitations. The first approach was to deposit Al2O 3 ALD barriers directly on Ca metal. While the Al 2O3 ALD barriers were successfully deposited, the measurement of an accurate WVTR was limited by barrier pinholes. The presence of pinholes in the Al2O3 ALD barrier on Ca results in the localized oxidation of the Ca sensor. Heterogeneous degradation of the Ca causes inaccuracies in the conductance of the film. As oxidation regions

  9. All high T sub c edge-geometry weak links utilizing Y-Ba-Cu-O barrier layers

    SciTech Connect

    Hunt, B.D.; Foote, M.C.; Bajuk, L.J. )

    1991-08-19

    High quality YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}}/normal-metal/YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} edge-geometry weak links have been fabricated using nonsuperconducting Y-Ba-Cu-O barrier layers deposited by laser ablation at reduced growth temperatures. Devices incorporating 25--100 A thick barrier layers exhibit current-voltage characteristics consistent with the resistively shunted junction model, with strong microwave and magnetic field response at temperatures up to 85 K. The critical currents vary exponentially with barrier thickness, and the resistances scale linearly with Y-Ba-Cu-O interlayer thickness and device area, indicating good barrier uniformity, with an effective normal metal coherence length of 20 A.

  10. Multi-layered ruthenium-containing bond coats for thermal barrier coatings

    NASA Astrophysics Data System (ADS)

    Tryon, Brian S.

    Advances in thermal barrier coating (TBC) technology for Ni-base superalloys have shown that B2 Pt-modified NiAl-based bond coatings outperform conventional NiAl bond coat layers for high temperature TBC multilayer systems. This thesis addresses the potential improvement in the high temperature capability of a 132 Ru-modified aluminide bond coat layer due to improved high temperature properties of RuAl over NiAl. The objectives of this research have been to define a processing path for fabrication of a multi-layered Ru-modified aluminide bond coating and to investigate its performance within a TBC system. Microstructural development and the oxidation behavior of Ru-modified and Ru/Pt-modified bond coatings have been studied in detail. Two types of Ru-modified bond coatings have been fabricated: one by means of high temperature, low activity chemical vapor deposition (CVD) processing, and one via high temperature, high activity pack-aluminization. The location of the RuAl-rich layer has been shown to be process dependent with a low activity Ru-containing bond coating producing an exterior B2 NiAl layer with an interior B2 RuAl layer and a high activity Ru-containing bond coat producing the reverse arrangement of B2 layers. While all bond coating systems studied offer some oxidation protection by forming alpha-Al2O3, the low activity Ru/Pt-modified bond coatings exhibited a higher resistance to oxidation-induced failure compared to Ru-modified bond coatings. Through 1000 cyclic oxidation exposures, the Ru/Pt-modified coatings with an initial Ru deposition of 3mum are comparable to conventional Pt-modified aluminide coatings. The Ru-Al-Ni ternary system is the basis for Ru-modifed aluminide coating systems. An experimental assessment of the Ru-Al-Ni phase diagram at 1000°C and 1100°C has been produced via a series of diffusion couple experiments. A continuous solid-solution has been shown to exist between the RuAl and NiAl phases in the ternary system at the

  11. Barrier coated drug layered particles for enhanced performance of amorphous solid dispersion dosage form.

    PubMed

    Puri, Vibha; Dantuluri, Ajay K; Bansal, Arvind K

    2012-01-01

    Amorphous solid dispersions (ASDs) may entail tailor-made dosage form design to exploit their solubility advantage. Surface phenomena dominated the performance of amorphous celecoxib solid dispersion (ACSD) comprising of amorphous celecoxib (A-CLB), polyvinylpyrrolidone, and meglumine (7:2:1, w/w). ACSD cohesive interfacial interactions hindered its capsule dosage form dissolution (Puri V, Dhantuluri AK, Bansal AK 2011. J Pharm Sci 100:2460-2468). Furthermore, ACSD underwent significant devitrification under environmental stress. In the present study, enthalpy relaxation studies revealed its free surface to contribute to molecular mobility. Based on all these observations, barrier coated amorphous CLB solid dispersion layered particles (ADLP) were developed by Wurster process, using microcrystalline cellulose as substrate and polyvinyl alcohol (PVA), inulin, and polyvinyl acetate phthalate (PVAP) as coating excipients. Capsule formulations of barrier coated-ADLP could achieve rapid dispersibility and high drug release. Evaluation under varying temperature and RH conditions suggested the crystallization inhibitory efficiency in order of inulin < PVA ≈ PVAP; however, under only temperature treatment, crystallization inhibition increased with increase in T(g) of the coating material. Simulated studies using DSC evidenced drug-polymer mixing at the interface as a potential mechanism for surface stabilization. In conclusion, surface modification yielded a fast dispersing robust high drug load ASD based dosage form.

  12. High-power single spatial mode AlGaAs channeled-substrate-planar semiconductor diode lasers for spaceborne communications

    NASA Technical Reports Server (NTRS)

    Connolly, J. C.; Carlin, D. B.; Ettenberg, M.

    1989-01-01

    A high power single spatial mode channeled substrate planar AlGaAs semiconductor diode laser was developed. The emission wavelength was optimized at 860 to 880 nm. The operating characteristics (power current, single spatial mode behavior, far field radiation patterns, and spectral behavior) and results of computer modeling studies on the performance of the laser are discussed. Reliability assessment at high output levels is included. Performance results on a new type of channeled substrate planar diode laser incorporating current blocking layers, grown by metalorganic chemical vapor deposition, to more effectively focus the operational current to the lasing region was demonstrated. The optoelectronic behavior and fabrication procedures for this new diode laser are discussed. The highlights include single spatial mode devices with up to 160 mW output at 8600 A, and quantum efficiencies of 70 percent (1 W/amp) with demonstrated operating lifetimes of 10,000 h at 50 mW.

  13. Distinguishing impurity concentrations in GaAs and AlGaAs using very shallow undoped heterostructures

    NASA Astrophysics Data System (ADS)

    Mak, W. Y.; Das Gupta, K.; Beere, H. E.; Farrer, I.; Sfigakis, F.; Ritchie, D. A.

    2010-12-01

    We have developed a method of fabricating very shallow, gateable, undoped two-dimensional electron gases (2DEG) and making very low resistivity contacts to these. We studied the evolution of mobility as a function of the depth of the 2DEG (from 310 to 30 nm). We extract quantitative information about the background impurity concentrations in GaAs and AlGaAs, the interface roughness, and the charge in the surface states. Surface charge sets an intrinsic limit to the mobility of very shallow 2DEGs. It is probably impossible to fabricate such shallow high-mobility 2DEGs using modulation doping due to the need to accommodate a spacer layer.

  14. Design, installation, and performance of a multi-layered permeable reactive barrier, Los Alamos National Laboratory

    SciTech Connect

    Kaszuba, J. P.; Longmire, P. A.; Strietelmeier, E. A.; Taylor, T. P.; Den-Baars, P. S.

    2004-01-01

    A multi-layered permeable reactive barrier (PRB) has been installed in Mortandad Canyon, on the Pajarito Plateau in the north-central part of LANL, to demonstrate in-situ treatment of a suite of contaminants with dissimilar geochemical properties. The PRB will also mitigate possible vulnerabilities from downgradient contaminant movement within alluvial and deeper perched groundwater. Mortandad Canyon was selected as the location for this demonstration project because the flow of alluvial groundwater is constrained by the geology of the canyon, a large network of monitoring wells already were installed along the canyon reach, and the hydrochemistry and contaminant history of the canyon is well-documented. The PRB uses a funnel-and-gate system with a series of four reactive media cells to immobilize or destroy contaminants present in alluvial groundwater, including strontium-90, plutonium-238,239,240, americium-241, perchlorate, and nitrate. The four cells, ordered by sequence of contact with the groundwater, consist of gravel-sized scoria (for colloid removal); phosphate rock containing apatite (for metals and radionuclides); pecan shells and cotton seed admixed with gravel (bio-barrier, to deplete dissolved oxygen and destroy potential RCRA organic compounds, nitrate and perchlorate); and limestone (pH buffering and anion adsorption). Design elements of the PRB are based on laboratory-scale treatability studies and on a field investigation of hydrologic, geochemical, and geotechnical parameters. The PRB was designed with the following criteria: 1-day residence time within the biobarrier, 10-year lifetime, minimization of surface water infiltration and erosion, optimization of hydraulic capture, and minimization of excavated material requiring disposal. Each layer has been equipped with monitoring wells or ports to allow sampling of groundwater and reactive media, and monitor wells are located immediately adjacent to the up- and down-gradient perimeter of the

  15. Ultralow turnoff loss dual-gate SOI LIGBT with trench gate barrier and carrier stored layer

    NASA Astrophysics Data System (ADS)

    He, Yi-Tao; Qiao, Ming; Zhang, Bo

    2016-12-01

    A novel ultralow turnoff loss dual-gate silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) is proposed. The proposed SOI LIGBT features an extra trench gate inserted between the p-well and n-drift, and an n-type carrier stored (CS) layer beneath the p-well. In the on-state, the extra trench gate acts as a barrier, which increases the carrier density at the cathode side of n-drift region, resulting in a decrease of the on-state voltage drop (Von). In the off-state, due to the uniform carrier distribution and the assisted depletion effect induced by the extra trench gate, large number of carriers can be removed at the initial turnoff process, contributing to a low turnoff loss (Eoff). Moreover, owing to the dual-gate field plates and CS layer, the carrier density beneath the p-well can greatly increase, which further improves the tradeoff between Eoff and Von. Simulation results show that Eoff of the proposed SOI LIGBT can decrease by 77% compared with the conventional trench gate SOI LIGBT at the same Von of 1.1 V. Project supported by the National Natural Science Foundation of China (Grant Nos. 61376080 and 61674027) and the Natural Science Foundation of Guangdong Province, China (Grant Nos. 2014A030313736 and 2016A030311022).

  16. AlGaAs phased array laser for optical communications

    NASA Technical Reports Server (NTRS)

    Carlson, N. W.

    1989-01-01

    Phased locked arrays of multiple AlGaAs diode laser emitters were investigated both in edge emitting and surface emitting configurations. CSP edge emitter structures, coupled by either evanescent waves or Y-guides, could not achieve the required powers (greater than or similar to 500 mW) while maintaining a diffraction limited, single lobed output beam. Indeed, although the diffraction limit was achieved in this type of device, it was at low powers and in the double lobed radiation pattern characteristic of out-of-phase coupling. Grating surface emitting (GSE) arrays were, therefore, investigated with more promising results. The incorporation of second order gratings in distribute Bragg reflector (DBR) structures allows surface emission, and can be configured to allow injection locking and lateral coupling to populate 2-D arrays that should be able to reach power levels commensurate with the needs of high performance, free space optical communications levels. Also, a new amplitude modulation scheme was developed for GSE array operation.

  17. Compressibility effects on the non-linear receptivity of boundary layers to dielectric barrier discharges

    NASA Astrophysics Data System (ADS)

    Denison, Marie F. C.

    The reduction of drag and aerodynamic heating caused by boundary layer transition is of central interest for the development of hypersonic vehicles. Receptivity to flow perturbation in the form of Tollmien-Schlichting (TS) wave growth often determines the first stage of the transition process, which can be delayed by depositing specific excitations into the boundary layer. Weakly ionized Dielectric Barrier Discharge (DBD) actuators are being investigated as possible sources of such excitations, but little is known today about their interaction with high-speed flows. In this framework, the first part of the thesis is dedicated to a receptivity study of laminar compressible boundary layers over a flat plate by linear stability analysis following an adjoint operator formulation, under DBD representative excitations assumed independent of flow conditions. The second part of the work concentrates on the development of a coupled plasma-Navier and Stokes solver targeted at the study of supersonic flow and compressibility effects on DBD forcing and non-parallel receptivity. The linear receptivity study of quasi-parallel compressible flows reveals several interesting features such as a significant shift of the region of maximum receptivity deeper into the flow at high Mach number and strong wave amplitude reduction compared to incompressible flows. The response to DBD relevant excitation distributions and to variations of the base flow conditions and system length scales follows these trends. Observed absolute amplitude changes and relative sensitivity modifications between source types are related to the evolution of the offset between forcing peak profile and relevant adjoint mode maximum. The analysis highlights the crucial importance of designing and placing the actuator in a way that matches its force field to the position of maximum boundary layer receptivity for the specific flow conditions of interest. In order to address the broad time and length scale spectrum

  18. Degradation of a two-layer thermal barrier coating under thermal cycling. [for superalloys of aircraft turbine engine blades

    NASA Technical Reports Server (NTRS)

    Maier, R. D.; Scheuermann, C. M.; Andrews, C. W.

    1981-01-01

    A two-layer plasma-sprayed thermal barrier coating on a directionally solidified nickel-base eutectic alloy substrate was characterized prior to and after thermal cycling to 1095 C in an accelerated furnace test. The coating was comprised of an inner layer of Ni-16.4Cr-5.1Al-0.15Y (wt%) bond coat and an outer layer of ZrO2-7.9Y2O3 (wt%) thermal barrier. Characterization of the bond coat revealed that substantial amounts of yttrium and aluminum were oxidized during plasma-spraying in air. The oxidation of these elements reduced the protective capacity of the bond coat so that, on thermal exposure, severe degradation of the bond coat resulted and large amounts of nickel oxide formed. This nickel oxide was demonstrated to grow outward into the thermal barrier, which appears to have increased the stresses in the thermal barrier and contributed to its failure near the thermal barrier-bond coat interface.

  19. InGaP Heterojunction Barrier Solar Cells

    NASA Technical Reports Server (NTRS)

    Welser, Roger E.

    2010-01-01

    A new solar-cell structure utilizes a single, ultra-wide well of either gallium arsenide (GaAs) or indium-gallium-phosphide (InGaP) in the depletion region of a wide bandgap matrix, instead of the usual multiple quantum well layers. These InGaP barrier layers are effective at reducing diode dark current, and photogenerated carrier escape is maximized by the proper design of the electric field and barrier profile. With the new material, open-circuit voltage enhancements of 40 and 100 mV (versus PIN control systems) are possible without any degradation in short-circuit current. Basic tenets of quantum-well and quantum- dot solar cells are utilized, but instead of using multiple thin layers, a single wide well works better. InGaP is used as a barrier material, which increases open current, while simultaneously lowering dark current, reducing both hole diffusion from the base, and space charge recombination within the depletion region. Both the built-in field and the barrier profile are tailored to enhance thermionic emissions, which maximizes the photocurrent at forward bias, with a demonstrated voltage increase. An InGaP heterojunction barrier solar cell consists of a single, ultra-wide GaAs, aluminum-gallium-arsenide (AlGaAs), or lower-energy-gap InGaP absorber well placed within the depletion region of an otherwise wide bandgap PIN diode. Photogenerated electron collection is unencumbered in this structure. InGaAs wells can be added to the thick GaAs absorber layer to capture lower-energy photons.

  20. Al{sub 2}O{sub 3} multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition

    SciTech Connect

    Jung, Hyunsoo; Jeon, Heeyoung; Choi, Hagyoung; Ham, Giyul; Shin, Seokyoon; Jeon, Hyeongtag

    2014-02-21

    Al{sub 2}O{sub 3} films deposited by remote plasma atomic layer deposition have been used for thin film encapsulation of organic light emitting diode. In this study, a multi-density layer structure consisting of two Al{sub 2}O{sub 3} layers with different densities are deposited with different deposition conditions of O{sub 2} plasma reactant time. This structure improves moisture permeation barrier characteristics, as confirmed by a water vapor transmission rate (WVTR) test. The lowest WVTR of the multi-density layer structure was 4.7 × 10{sup −5} gm{sup −2} day{sup −1}, which is one order of magnitude less than WVTR for the reference single-density Al{sub 2}O{sub 3} layer. This improvement is attributed to the location mismatch of paths for atmospheric gases, such as O{sub 2} and H{sub 2}O, in the film due to different densities in the layers. This mechanism is analyzed by high resolution transmission electron microscopy, elastic recoil detection, and angle resolved X-ray photoelectron spectroscopy. These results confirmed that the multi-density layer structure exhibits very good characteristics as an encapsulation layer via location mismatch of paths for H{sub 2}O and O{sub 2} between the two layers.

  1. Comparison of MWIR unipolar barrier structures based on strained layer superlattices (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Ramirez, David A.; Myers, Stephen A.; Kuznetsova, Yuliya; Mathews, Sen; Schuler-Sandy, Theodore; Steenbergen, Elizabeth H.; Morath, Christian P.; Cowan, Vicent M.; Krishna, Sanjay

    2016-09-01

    In this work, we compare the performance of three MWIR unipolar barrier structures based on the InAs/GaSb Type-2 strained layer superlattice material system. We have designed, fabricated, and characterized pBiBn, pBn, and pBp detector structures. All the structures have been designed so that the cut off wavelength is around 5 microns at 100 K. We fabricated single-pixel devices and characterize their radiometric performance. In addition, we have characterized the degradation of the performance of the devices after exposing the devices to 63 MeV proton radiation to total ionizing dose of 100 kRad (Si). In this report, we compare the performance of the different structures with the objective of determining the advantages and disadvantages of the different designs. This work was supported by the Small Business Innovation Research (SBIR) program under the contract FA9453-14-C-0032, sponsored by the Air Force Research Laboratory (AFRL).

  2. Thin-film Nanofibrous Composite Membranes Containing Cellulose or Chitin Barrier Layers Fabricated by Ionic Liquids

    SciTech Connect

    H Ma; B Hsiao; B Chu

    2011-12-31

    The barrier layer of high-flux ultrafiltration (UF) thin-film nanofibrous composite (TFNC) membranes for purification of wastewater (e.g., bilge water) have been prepared by using cellulose, chitin, and a cellulose-chitin blend, regenerated from an ionic liquid. The structures and properties of regenerated cellulose, chitin, and a cellulose-chitin blend were analyzed with thermogravimetric analysis (TGA) and wide-angle X-ray diffraction (WAXD). The surface morphology, pore size and pore size distribution of TFNC membranes were determined by SEM images and molecular weight cut-off (MWCO) methods. An oil/water emulsion, a model of bilge water, was used as the feed solution, and the permeation flux and rejection ratio of the membranes were investigated. TFNC membranes based on the cellulose-chitin blend exhibited 10 times higher permeation flux when compared with a commercial UF membrane (PAN10, Sepro) with a similar rejection ratio after filtration over a time period of up to 100 h, implying the practical feasibility of such membranes for UF applications.

  3. Polystyrene films as barrier layers for corrosion protection of copper and copper alloys.

    PubMed

    Románszki, Loránd; Datsenko, Iaryna; May, Zoltán; Telegdi, Judit; Nyikos, Lajos; Sand, Wolfgang

    2014-06-01

    Dip-coated polystyrene layers of sub-micrometre thickness (85-500nm) have been applied on copper and copper alloys (aluminium brass, copper-nickel 70/30), as well as on stainless steel 304, and produced an effective barrier against corrosion and adhesion of corrosion-relevant microorganisms. According to the dynamic wettability measurements, the coatings exhibited high advancing (103°), receding (79°) and equilibrium (87°) contact angles, low contact angle hysteresis (6°) and surface free energy (31mJ/m(2)). The corrosion rate of copper-nickel 70/30 alloy samples in 3.5% NaCl was as low as 3.2μm/a (44% of that of the uncoated samples), and in artificial seawater was only 0.9μm/a (29% of that of the uncoated samples). Cell adhesion was studied by fluorescence microscopy, using monoculture of Desulfovibrio alaskensis. The coatings not only decreased the corrosion rate but also markedly reduced the number of bacterial cells adhered to the coated surfaces. The PS coating on copper gave the best result, 2×10(3)cells/cm(2) (1% of that of the uncoated control).

  4. The Barrier Layer of the Atlantic Warmpool: Formation Mechanism and Influence on the Mean Climate

    SciTech Connect

    Balaguru, Karthik; Chang, P.; Saravanan, R.; Jang, C. J.

    2012-04-20

    Many Coupled General Circulation Models (CGCMs) tend to overestimate the salinity in the Atlantic warm pool or the Northwestern Tropical Atlantic (NWTA) and underestimate the surface salinity in the subtropical salinity maxima region. Most of these models also suffer from a sea-surface temperature (SST) bias in the NWTA region, leading to suggestions that the upper ocean salinity stratification may need to be improved in order to improve the Barrier Layer (BL) simulations and thus the SST through BL-SST-Intertropical Convergence Zone (ITCZ) feedbacks. In the present study, we use a CGCM to perform a set of idealized numerical experiments to test and understand the sensitivity of the BL and consequently SST in the NWTA region to freshwater flux and hence the upper ocean salinity stratification. We find that the BL of the NWTA is sensitive to upper ocean salinity changes in the Amazon river discharge region and the subtropical salinity maxima region. The BL phenomenon is further manifested by the formation of winter temperature inversions in our model simulations, the maximum magnitude of inversions being about 0.20 C. The atmo- spheric response causes a statistically significant reduction of mean precipitation and SST in the equatorial Atlantic region and helps improve the respective biases by 10-15 %. In the region of improved BL simulation, the SST change is positive and in the right direction of bias correction, albeit weak.

  5. Remodeling of Tight Junctions and Enhancement of Barrier Integrity of the CACO-2 Intestinal Epithelial Cell Layer by Micronutrients.

    PubMed

    Valenzano, Mary Carmen; DiGuilio, Katherine; Mercado, Joanna; Teter, Mimi; To, Julie; Ferraro, Brendan; Mixson, Brittany; Manley, Isabel; Baker, Valerissa; Moore, Beverley A; Wertheimer, Joshua; Mullin, James M

    2015-01-01

    The micronutrients zinc, quercetin, butyrate, indole and berberine were evaluated for their ability to induce remodeling of epithelial tight junctions (TJs) and enhance barrier integrity in the CACO-2 gastrointestinal epithelial cell culture model. All five of these chemically very diverse micronutrients increased transepithelial electrical resistance (Rt) significantly, but only berberine also improved barrier integrity to the non-electrolyte D-mannitol. Increases of Rt as much as 200% of untreated controls were observed. Each of the five micronutrients also induced unique, signature-like changes in TJ protein composition, suggesting multiple pathways (and TJ arrangements) by which TJ barrier function can be enhanced. Decreases in abundance by as much as 90% were observed for claudin-2, and increases of over 300% could be seen for claudins -5 and -7. The exact effects of the micronutrients on barrier integrity and TJ protein composition were found to be highly dependent on the degree of differentiation of the cell layer at the time it was exposed to the micronutrient. The substratum to which the epithelial layer adheres was also found to regulate the response of the cell layer to the micronutrient. The implications of these findings for therapeutically decreasing morbidity in Inflammatory Bowel Disease are discussed.

  6. Ultraviolet-enhanced light emitting diode employing individual ZnO microwire with SiO{sub 2} barrier layers

    SciTech Connect

    Xu, Yingtian; Xu, Li; Dai, Jun; Ma, Yan; Chu, Xianwei; Zhang, Yuantao; Du, Guotong; Zhang, Baolin; Yin, Jingzhi

    2015-05-25

    This paper details the fabrication of n-ZnO single microwire (SMW)-based high-purity ultraviolet light-emitting diodes (UV-LEDs) with an added SiO{sub 2} barrier layer on the p-Si substrate. However, the current-voltage (I-V) curve exhibited non-ideal rectifying characteristics. Under forward bias, both UV and visible emissions could be detected by electroluminescence (EL) measurement. When bias voltage reached 60 V at room temperature, a UV emission spike occurred at 390 nm originating from the n-ZnO SMW. Compared with the EL spectrum of the n-ZnO SMW/p-Si heterojunction device without the SiO{sub 2} barrier layer, we saw improved UV light extraction efficiency from the current-blocking effect of the SiO{sub 2} layer. The intense UV emission in the n-ZnO SMW/SiO{sub 2}/p-Si heterojunction indicated that the SiO{sub 2} barrier layer can restrict the movement of electrons as expected and result in effective electron-hole recombination in ZnO SMW.

  7. Controlled aluminum-induced crystallization of an amorphous silicon thin film by using an oxide-layer diffusion barrier

    NASA Astrophysics Data System (ADS)

    Hwang, Ji-Hyun; Kwak, Hyunmin; Kwon, Myeung Hoi

    2014-03-01

    Aluminum-induced crystallization (AIC) of amorphous silicon with an Al2O3 diffusion barrier was investigated for controlling Si crystallization and preventing layer exchange during the annealing process. An Al2O3 layer was deposited between the a-Si and the Al films (a-Si/Al2O3/Al/Glass) and was blasted with an air spray gun with alumina beads to form diffusion channels between the Si and the Al layers. During the annealing process, small grain Si x Al seeds were formed at the channels. Then, the Al2O3 diffusion barrier was restructured to close the channels and prevent further diffusion of Al atoms into the a-Si layer. A polycrystalline Si film with (111), (220) and (311) crystallization peaks in the X-ray diffraction pattern was formed by annealing at 560 °C in a conventional furnace. That film showed a p-type semiconducting behavior with good crystallinity and a large grain size of up to 14.8 µm. No layer conversion occurred between the Si and the Al layers, which had been the fundamental obstacle to the applications in the crystallization of a-Si films by using the AIC method.

  8. Chromium oxide as a metal diffusion barrier layer: An x-ray absorption fine structure spectroscopy study

    NASA Astrophysics Data System (ADS)

    Ahamad Mohiddon, Md.; Lakshun Naidu, K.; Ghanashyam Krishna, M.; Dalba, G.; Ahmed, S. I.; Rocca, F.

    2014-01-01

    The interaction at the interface between chromium and amorphous Silicon (a-Si) films in the presence of a sandwich layer of chromium oxide is investigated using X-ray absorption fine structure (XAFS) spectroscopy. The oxidized interface was created, in situ, prior to the deposition of a 400 nm tick a-Si layer over a 50 nm tick Cr layer. The entire stack of substrate/metallic Cr/Cr2O3/a-Si was then annealed at temperatures from 300 up to 700 °C. Analysis of the near edge and extended regions of each XAFS spectrum shows that only a small fraction of Cr is able to diffuse through the oxide layer up to 500 °C, while the remaining fraction is buried under the oxide layer in the form of metallic Cr. At higher temperatures, diffusion through the oxide layer is enhanced and the diffused metallic Cr reacts with a-Si to form CrSi2. At 700 °C, the film contains Cr2O3 and CrSi2 without evidence of unreacted metallic Cr. The activation energy and diffusion coefficient of Cr are quantitatively determined in the two temperature regions, one where the oxide acts as diffusion barrier and another where it is transparent to Cr diffusion. It is thus demonstrated that chromium oxide can be used as a diffusion barrier to prevent metal diffusion into a-Si.

  9. Comparison of degradation and recaesiation between GaAs and AlGaAs photocathodes in an unbaked vacuum system.

    PubMed

    Feng, Cheng; Zhang, Yijun; Shi, Feng; Qian, Yunsheng; Cheng, Hongchang; Zhang, Junju; Liu, Xinxin; Zhang, Xiang

    2017-03-20

    The lifetime and reliability of a photocathode during operation are always raised problems and the photocathode performance depends on the vacuum condition. With the purpose of investigating the stability and reliability of a GaAs-based photocathode in a harsher vacuum environment, reflection-mode exponential-doped GaAs and AlGaAs photocathodes are metalorganic vapor-phase epitaxial grown and then (Cs, O) activated inside an unbaked vacuum chamber. The degraded photocurrents are compared after activation and recaesiations between GaAs and AlGaAs photocathdoes under illumination with an equal initial photocurrent and an equal optical flux, respectively. It is found that the performance on degradation and recaesiations between GaAs and AlGaAs photocathodes are different. In the unbaked vacuum system, the stability of an AlGaAs photocathode after (Cs, O) activation is always better than that of a GaAs photocathode. After multiple recaesiations, the photocurrent decay curves of the AlGaAs photocathode are nearly coincident, which means a nearly constant operational lifetime. Moreover, operational lifetime of an AlGaAs photocathode is longer than that of a GaAs photocathode, which further illuminates that AlGaAs photocathodes are superior to GaAs photocathodes in stability and repeatability under markedly harsher vacuum conditions.

  10. Efficient, air-stable colloidal quantum dot solar cells encapsulated using atomic layer deposition of a nanolaminate barrier

    SciTech Connect

    Ip, Alexander H.; Labelle, André J.; Sargent, Edward H.

    2013-12-23

    Atomic layer deposition was used to encapsulate colloidal quantum dot solar cells. A nanolaminate layer consisting of alternating alumina and zirconia films provided a robust gas permeation barrier which prevented device performance degradation over a period of multiple weeks. Unencapsulated cells stored in ambient and nitrogen environments demonstrated significant performance losses over the same period. The encapsulated cell also exhibited stable performance under constant simulated solar illumination without filtration of harsh ultraviolet photons. This monolithically integrated thin film encapsulation method is promising for roll-to-roll processed high efficiency nanocrystal solar cells.

  11. Vacancy reactions near the interface between electroplated Cu and barrier metal layers studied by monoenergetic positron beams

    NASA Astrophysics Data System (ADS)

    Uedono, A.; Kirimura, T.; Wilson, C. J.; Croes, K.; Demuynck, S.; Tőkei, Z.; Oshima, N.; Suzuki, R.

    2013-08-01

    Positron annihilation was used to probe vacancy-type defects in electrodeposited Cu films with capping layers. For as-deposited Cu films, two different types of vacancy-type defects were found to coexist: vacancy aggregates (V2-V4) and larger vacancy clusters (˜V10). During the fabrication processes of the capping layers, these defects diffused towards the interface between the capping layers and Cu. On the sample with the capping layers consisting of TaN and SiCN, a vacancy-rich region about 40 nm wide was introduced below the TaN/Cu interface, which was attributed to the blocking of vacancies by the TaN layer, and resulted in their agglomeration. The SiCN layer started degrading at annealing temperatures above 270 °C. Above 570 °C, the size of open spaces and their concentration in the SiCN layer decreased, which can be attributed to the diffusion of Cu atoms into the SiCN layer. Positron annihilation was shown to have a high potential to detect vacancy-type defects and open spaces near the interface between barrier metals and electroplated Cu.

  12. Electroless nickel alloy deposition on SiO2 for application as a diffusion barrier and seed layer in 3D copper interconnect technology.

    PubMed

    Kim, Tae-Yoo; Son, Hwa-Jin; Lim, Seung-Kyu; Song, Young-Il; Park, Hwa-Sun; Suh, Su-Jeong

    2014-12-01

    Electroless Ni-P films were investigated with the aim of application as barrier and seed layers in 3D interconnect technology. Different shapes of blind-via holes were fabricated with a deep reactive ion etcher and SiO2 formed on these holes as an insulating layer. The surface of the substrate has been made hydrophilic by O2 plasma treatment with 100 W of power for 20 min. Electroless Ni-P films were deposited as both a diffusion barrier and a seed layer for Cu filling process. Prior to plating, substrates were activated in a palladium chloride solution after sensitization in a tin chloride solution with various conditions in order to deposit uniform films in TSV. After the formation of the electroless barrier layer, electro Cu was plated directly on the barrier layer. Ni-P films fabricated in blind-via holes were observed by scanning electron microscope. Energy dispersive spectroscopy line scanning was carried out for evaluating the diffusion barrier properties of the Ni-P films. The electroless Ni-P layer worked well as a Cu diffusion barrier until 300 degrees C. However, Cu ions diffused into barrier layer when the annealing temperature increases over 400 degrees C.

  13. On statistical properties of transport barriers in magnetospheric and laboratory boundary layers

    NASA Astrophysics Data System (ADS)

    Savin, Sergey; Budaev, Viacheslav; Zeleniy, Lev; Amata, Ermanno; Kozak, Lyudmila; Buechner, Joerg; Romanov, Stanislav; Blecki, Jan; Balikhin, Michael A.; Lezhen, Liudmila

    Transport barriers at outer magnetospheric boundaries have a dualistic feature: being effec-tive in limitation of the momentum transfer and serving as an effective obstacle, they display the super-diffusive statistical properties and provide partial exchange of plasmas. In tokamaks namely the statistical properties of transport barriers look to control the high and low heating modes, while small size of the barriers prevents their detailed studies. We tend to use magne-tospheric multi-spacecraft data to improve understanding of common physics in the transport barriers. We show examples from Interball-1 and Cluster with quiet solar wind. The inherently turbulent crossings in this equilibrium cases demonstrate ion heating namely in the transport barrier. It agrees with the kinetic energy transformation into the thermal one inside the barrier -the turbulent dissipation of the magnetosheath kinetic energy -as simultaneously with the ion temperature rise, the general velocity component drops from its model prediction. In sense of the momentum transfer the transport turbulent barriers effectively isolate the high-alti-tude cusp from fast-flowing magnetosheath. Contrary to that, several examples from different missions and different plasma parameters demonstrate the super-diffusive transport character. The individual coherent structures inside the barriers, which we call Alfvenic 'collapsons', have similar scale chains to that of high kinetic plasma pressure jets, showing mutual interaction features. We think that the interacting jets and barriers, accompanying by classic and/ or micro-reconnection, have rather general importance for the plasma physics, and for understanding of turbulence and mechanisms of magnetic field generation. These coherent, nonlinear interacting structures, most probably, provide intermittency a long-range correlations inside the transport barriers (c.f. blobs and flow spikes in fusion devices). We recall that very high-amplitude turbulence in

  14. Research Update: Reactively sputtered nanometer-thin ZrN film as a diffusion barrier between Al and boron layers for radiation detector applications

    SciTech Connect

    Golshani, Negin Mohammadi, V.; Schellevis, H.; Beenakker, C. I. M.; Ishihara, R.

    2014-10-01

    In this paper, optimization of the process flow for PureB detectors is investigated. Diffusion barrier layers between a boron layer and the aluminum interconnect can be used to enhance the performance and visual appearance of radiation detectors. Few nanometers-thin Zirconium Nitride (ZrN) layer deposited by reactive sputtering in a mixture of Ar/N{sub 2}, is identified as a reliable diffusion barrier with better fabrication process compatibility than others. The barrier properties of this layer have been tested for different boron layers deposited at low and high temperatures with extensive optical microscopy analyses, electron beam induced current, SEM, and electrical measurements. This study demonstrated that spiking behavior of pure Al on Si can be prevented by the thin ZrN layer thus improving the performance of the radiation detectors fabricated using boron layer.

  15. Atomic Layer Deposited Co(W) Film as a Single-Layered Barrier/Liner for Next-Generation Cu-Interconnects

    NASA Astrophysics Data System (ADS)

    Shimizu, Hideharu; Sakoda, Kaoru; Momose, Takeshi; Shimogaki, Yukihiro

    2012-05-01

    Cobalt film with tungsten addition [Co(W)] has the potential to be an effective single-layered barrier/liner in interconnects awing to its good adhesion with Cu, a lower resistivity than TaN, and an improved barrier property with respect to cobalt films. Our previous study on chemical-vapor-deposited (CVD) Co(W) using carbonyl precursors clarified, however, that WO3 included in the films increased the resistivity. In this current study, to reduce the resistivity of Co(W), oxygen-free Co(W) films were fabricated from two oxygen-free precursors, bis(cyclopentadienyl)cobalt and bis(cyclopentadienyl)tungstendihydride, by atomic layer deposition (ALD) using NH2 radicals generated using a hot filament. Results revealed that (a) W concentration in ALD-Co(W) could be controlled by adjusting the gas-feed sequences, (b) W addition improved the barrier property of ALD-Co(W) against Cu diffusion, (c) diffusion of Cu into ALD-Co(W) had a high activation energy, 2.0 eV, indicating interstitial diffusion, and (d) ALD-Co(W) consisted mainly of an amorphous-like phase, which is consistent with the high activation energy of Cu diffusion.

  16. The role of the spray pyrolysed Al2O3 barrier layer in achieving high efficiency solar cells on flexible steel substrates

    NASA Astrophysics Data System (ADS)

    Gledhill, Sophie E.; Zykov, Anton; Rissom, Thorsten; Caballero, Raquel; Kaufmann, Christian A.; Fischer, Christian-Herbert; Lux-Steiner, Martha; Efimova, Varvara; Hoffmann, Volker; Oswald, Steffen

    2011-07-01

    Thin film chalcopyrite solar cells grown on light-weight, flexible steel substrates are poised to enter the photovoltaic market. To guarantee good solar cell performance, the diffusion of iron from the steel into the CIGSe absorber material must be hindered during layer deposition. A barrier layer is thus required to isolate the solar module from the metal substrate, both electronically and chemically. Ideally the barrier layer would be deposited by a cheap roll-to-roll process suitable to coat flexible steel substrates. Aluminium oxide deposited by spray pyrolysis matches the criteria. The coating is homogeneous over rough substrates allowing comparatively thin barrier layers to be utilized. In this article, solar cell results are presented contrasting the device performance made with a barrier layer to that without a barrier layer. Secondary Ion Mass spectrometry (SIMS) measurements show that the spray pyrolysed barrier layer diminishes iron diffusion to the chalcopyrite absorber layer. The role of sodium, imperative for the growth of high efficiency chalcopyrite solar cells, and how it interacts with Al2O3 is discussed.

  17. Physical and numerical modeling of an inclined three-layer (silt/gravelly sand/clay) capillary barrier cover system under extreme rainfall.

    PubMed

    Ng, Charles W W; Liu, Jian; Chen, Rui; Xu, Jie

    2015-04-01

    As an extension of the two-layer capillary barrier, a three-layer capillary barrier landfill cover system is proposed for minimizing rainfall infiltration in humid climates. This system consists of a compacted clay layer lying beneath a conventional cover with capillary barrier effects (CCBE), which is in turn composed of a silt layer sitting on top of a gravelly sand layer. To explore the effectiveness of the new system in minimizing rainfall infiltration, a flume model (3.0 m × 1.0 m × 1.1 m) was designed and set up in this study. This physical model was heavily instrumented to monitor pore water pressure, volumetric water content, surface runoff, infiltration and lateral drainage of each layer, and percolation of the cover system. The cover system was subjected to extreme rainfall followed by evaporation. The experiment was also back-analyzed using a piece of finite element software called CODE_BRIGHT to simulate transient water flows in the test. Based on the results obtained from various instruments, it was found that breakthrough of the two upper layers occurred for a 4-h rainfall event having a 100-year return period. Due to the presence of the newly introduced clay layer, the percolation of the three-layer capillary barrier cover system was insignificant because the clay layer enabled lateral diversion in the gravelly sand layer above. In other words, the gravelly sand layer changed from being a capillary barrier in a convention CCBE cover to being a lateral diversion passage after the breakthrough of the two upper layers. Experimental and back-analysis results confirm that no infiltrated water seeped through the proposed three-layer barrier system. The proposed system thus represents a promising alternative landfill cover system for use in humid climates.

  18. Analysis of Al diffusion processes in TiN barrier layers for the application in silicon solar cell metallization

    NASA Astrophysics Data System (ADS)

    Kumm, J.; Samadi, H.; Chacko, R. V.; Hartmann, P.; Wolf, A.

    2016-07-01

    An evaporated Al layer is known as an excellent rear metallization for highly efficient solar cells, but suffers from incompatibility with a common solder process. To enable solar cell-interconnection and module integration, in this work the Al layer is complemented with a solder stack of TiN/Ti/Ag or TiN/NiV/Ag, in which the TiN layer acts as an Al diffusion barrier. X-ray photoelectron spectroscopy measurements prove that diffusion of Al through the stack and the formation of an Al2O3 layer on the stack's surface are responsible for a loss of solderability after a strong post-metallization anneal, which is often mandatory to improve contact resistance and passivation quality. An optimization of the reactive TiN sputter process results in a densification of the TiN layer, which improves its barrier quality against Al diffusion. However, measurements with X-ray diffraction and scanning electron microscopy show that small grains with vertical grain boundaries persist, which still offer fast diffusion paths. Therefore, the concept of stuffing is introduced. By incorporating oxygen into the grain boundaries of the sputtered TiN layer, Al diffusion is strongly reduced as confirmed by secondary ion mass spectroscopy profiles. A quantitative analysis reveals a one order of magnitude lower Al diffusion coefficient for stuffed TiN layers. This metallization system maintains its solderability even after strong post-metallization annealing at 425 °C for 15 min. This paper thus presents an industrially feasible, conventionally solderable, and long-term stable metallization scheme for highly efficient silicon solar cells.

  19. Accuracy of Young's Modulus of Thermal Barrier Coating Layer Determined by Bending Resonance of a Multilayered Specimen

    NASA Astrophysics Data System (ADS)

    Waki, Hiroyuki; Takizawa, Kensuke; Kato, Masahiko; Takahashi, Satoru

    2016-04-01

    The Young's modulus of individual layer in thermal barrier coating (TBC) system is an important mechanical property because it allows determining the parameters of materials mechanics in the TBC system. In this study, we investigated the accuracy of the evaluation method for the Young's modulus of a TBC layer according to the first bending resonance of a multilayered specimen comprising a substrate, bond coating, and TBC. First, we derived a closed-form solution for the Young's modulus of the TBC layer using the equation of motion for the bending vibration of a composite beam. The solution for the three-layered model provided the Young's modulus of the TBC layer according to the measured resonance frequency and the known values for the dimensions, mass, and Young's moduli of all the other layers. Next, we analyzed the sensitivity of these input errors to the evaluated Young's modulus and revealed the important inputs for accurate evaluation. Finally, we experimentally confirmed that the Young's modulus of the TBC layer was obtained accurately by the developed method.

  20. A Theoretical Model for Predicting Residual Stress Generation in Fabrication Process of Double-Ceramic-Layer Thermal Barrier Coating System.

    PubMed

    Song, Yan; Wu, Weijie; Xie, Feng; Liu, Yilun; Wang, Tiejun

    2017-01-01

    Residual stress arisen in fabrication process of Double-Ceramic-Layer Thermal Barrier Coating System (DCL-TBCs) has a significant effect on its quality and reliability. In this work, based on the practical fabrication process of DCL-TBCs and the force and moment equilibrium, a theoretical model was proposed at first to predict residual stress generation in its fabrication process, in which the temperature dependent material properties of DCL-TBCs were incorporated. Then, a Finite Element method (FEM) has been carried out to verify our theoretical model. Afterwards, some important geometric parameters for DCL-TBCs, such as the thickness ratio of stabilized Zirconia (YSZ, ZrO2-8%Y2O3) layer to Lanthanum Zirconate (LZ, La2Zr2O7) layer, which is adjustable in a wide range in the fabrication process, have a remarkable effect on its performance, therefore, the effect of this thickness ratio on residual stress generation in the fabrication process of DCL-TBCs has been systematically studied. In addition, some thermal spray treatment, such as the pre-heating treatment, its effect on residual stress generation has also been studied in this work. It is found that, the final residual stress mainly comes from the cooling down process in the fabrication of DCL-TBCs. Increasing the pre-heating temperature can obviously decrease the magnitude of residual stresses in LZ layer, YSZ layer and substrate. With the increase of the thickness ratio of YSZ layer to LZ layer, magnitudes of residual stresses arisen in LZ layer and YSZ layer will increase while residual stress in substrate will decrease.

  1. A Theoretical Model for Predicting Residual Stress Generation in Fabrication Process of Double-Ceramic-Layer Thermal Barrier Coating System

    PubMed Central

    Song, Yan; Wu, Weijie; Xie, Feng; Liu, Yilun; Wang, Tiejun

    2017-01-01

    Residual stress arisen in fabrication process of Double-Ceramic-Layer Thermal Barrier Coating System (DCL-TBCs) has a significant effect on its quality and reliability. In this work, based on the practical fabrication process of DCL-TBCs and the force and moment equilibrium, a theoretical model was proposed at first to predict residual stress generation in its fabrication process, in which the temperature dependent material properties of DCL-TBCs were incorporated. Then, a Finite Element method (FEM) has been carried out to verify our theoretical model. Afterwards, some important geometric parameters for DCL-TBCs, such as the thickness ratio of stabilized Zirconia (YSZ, ZrO2-8%Y2O3) layer to Lanthanum Zirconate (LZ, La2Zr2O7) layer, which is adjustable in a wide range in the fabrication process, have a remarkable effect on its performance, therefore, the effect of this thickness ratio on residual stress generation in the fabrication process of DCL-TBCs has been systematically studied. In addition, some thermal spray treatment, such as the pre-heating treatment, its effect on residual stress generation has also been studied in this work. It is found that, the final residual stress mainly comes from the cooling down process in the fabrication of DCL-TBCs. Increasing the pre-heating temperature can obviously decrease the magnitude of residual stresses in LZ layer, YSZ layer and substrate. With the increase of the thickness ratio of YSZ layer to LZ layer, magnitudes of residual stresses arisen in LZ layer and YSZ layer will increase while residual stress in substrate will decrease. PMID:28103275

  2. Valence-band offsets and Schottky barrier heights of layered semiconductors explained by interface-induced gap states

    NASA Astrophysics Data System (ADS)

    Mönch, Winfried

    1998-04-01

    Many metal chalcogenides are layered semiconductors. They consist of chalcogen-metal-chalcogen layers that are themselves bound by van der Waals forces. Hence, heterostructures involving layered compounds are abrupt and strain-free. Experimental valence-band offsets of heterostructures between GaSe, InSe, SnS2, SnSe2, MoS2, MoTe2, WSe2, and CuInSe2 and between some of these compounds and ZnSe, CdS, and CdTe as well as barrier heights of Au contacts on GaSe, InSe, MoS2, MoTe2, WSe2, ZnSe, CdS, and CdTe are analyzed. The valence-band discontinuities of the heterostructures and the barrier heights of the Schottky contact compounds are consistently described by the continuum of interface-induced gap states as the primary mechanism that governs the band lineup at semiconductor interfaces.

  3. Silica-sol-based spin-coating barrier layer against phosphorous diffusion for crystalline silicon solar cells.

    PubMed

    Uzum, Abdullah; Fukatsu, Ken; Kanda, Hiroyuki; Kimura, Yutaka; Tanimoto, Kenji; Yoshinaga, Seiya; Jiang, Yunjian; Ishikawa, Yasuaki; Uraoka, Yukiharu; Ito, Seigo

    2014-01-01

    The phosphorus barrier layers at the doping procedure of silicon wafers were fabricated using a spin-coating method with a mixture of silica-sol and tetramethylammonium hydroxide, which can be formed at the rear surface prior to the front phosphorus spin-on-demand (SOD) diffusion and directly annealed simultaneously with the front phosphorus layer. The optimization of coating thickness was obtained by changing the applied spin-coating speed; from 2,000 to 8,000 rpm. The CZ-Si p-type silicon solar cells were fabricated with/without using the rear silica-sol layer after taking the sheet resistance measurements, SIMS analysis, and SEM measurements of the silica-sol material evaluations into consideration. For the fabrication of solar cells, a spin-coating phosphorus source was used to form the n(+) emitter and was then diffused at 930°C for 35 min. The out-gas diffusion of phosphorus could be completely prevented by spin-coated silica-sol film placed on the rear side of the wafers coated prior to the diffusion process. A roughly 2% improvement in the conversion efficiency was observed when silica-sol was utilized during the phosphorus diffusion step. These results can suggest that the silica-sol material can be an attractive candidate for low-cost and easily applicable spin-coating barrier for any masking purpose involving phosphorus diffusion.

  4. Silica-sol-based spin-coating barrier layer against phosphorous diffusion for crystalline silicon solar cells

    NASA Astrophysics Data System (ADS)

    Uzum, Abdullah; Fukatsu, Ken; Kanda, Hiroyuki; Kimura, Yutaka; Tanimoto, Kenji; Yoshinaga, Seiya; Jiang, Yunjian; Ishikawa, Yasuaki; Uraoka, Yukiharu; Ito, Seigo

    2014-12-01

    The phosphorus barrier layers at the doping procedure of silicon wafers were fabricated using a spin-coating method with a mixture of silica-sol and tetramethylammonium hydroxide, which can be formed at the rear surface prior to the front phosphorus spin-on-demand (SOD) diffusion and directly annealed simultaneously with the front phosphorus layer. The optimization of coating thickness was obtained by changing the applied spin-coating speed; from 2,000 to 8,000 rpm. The CZ-Si p-type silicon solar cells were fabricated with/without using the rear silica-sol layer after taking the sheet resistance measurements, SIMS analysis, and SEM measurements of the silica-sol material evaluations into consideration. For the fabrication of solar cells, a spin-coating phosphorus source was used to form the n+ emitter and was then diffused at 930°C for 35 min. The out-gas diffusion of phosphorus could be completely prevented by spin-coated silica-sol film placed on the rear side of the wafers coated prior to the diffusion process. A roughly 2% improvement in the conversion efficiency was observed when silica-sol was utilized during the phosphorus diffusion step. These results can suggest that the silica-sol material can be an attractive candidate for low-cost and easily applicable spin-coating barrier for any masking purpose involving phosphorus diffusion.

  5. Silica-sol-based spin-coating barrier layer against phosphorous diffusion for crystalline silicon solar cells

    PubMed Central

    2014-01-01

    The phosphorus barrier layers at the doping procedure of silicon wafers were fabricated using a spin-coating method with a mixture of silica-sol and tetramethylammonium hydroxide, which can be formed at the rear surface prior to the front phosphorus spin-on-demand (SOD) diffusion and directly annealed simultaneously with the front phosphorus layer. The optimization of coating thickness was obtained by changing the applied spin-coating speed; from 2,000 to 8,000 rpm. The CZ-Si p-type silicon solar cells were fabricated with/without using the rear silica-sol layer after taking the sheet resistance measurements, SIMS analysis, and SEM measurements of the silica-sol material evaluations into consideration. For the fabrication of solar cells, a spin-coating phosphorus source was used to form the n+ emitter and was then diffused at 930°C for 35 min. The out-gas diffusion of phosphorus could be completely prevented by spin-coated silica-sol film placed on the rear side of the wafers coated prior to the diffusion process. A roughly 2% improvement in the conversion efficiency was observed when silica-sol was utilized during the phosphorus diffusion step. These results can suggest that the silica-sol material can be an attractive candidate for low-cost and easily applicable spin-coating barrier for any masking purpose involving phosphorus diffusion. PMID:25520602

  6. Effect of Layer-Graded Bond Coats on Edge Stress Concentration and Oxidation Behavior of Thermal Barrier Coatings

    NASA Technical Reports Server (NTRS)

    Zhu, Dongming; Ghosn, Louis J.; Miller, Robert A.

    1998-01-01

    Thermal barrier coating (TBC) durability is closely related to design, processing and microstructure of the coating Z, tn systems. Two important issues that must be considered during the design of a thermal barrier coating are thermal expansion and modulus mismatch between the substrate and the ceramic layer, and substrate oxidation. In many cases, both of these issues may be best addressed through the selection of an appropriate bond coat system. In this study, a low thermal expansion and layer-graded bond coat system, that consists of plasma-sprayed FeCoNiCrAl and FeCrAlY coatings, and a high velocity oxyfuel (HVOF) sprayed FeCrAlY coating, is developed to minimize the thermal stresses and provide oxidation resistance. The thermal expansion and oxidation behavior of the coating system are also characterized, and the strain isolation effect of the bond coat system is analyzed using the finite element method (FEM). Experiments and finite element results show that the layer-graded bond coat system possesses lower interfacial stresses. better strain isolation and excellent oxidation resistance. thus significantly improving the coating performance and durability.

  7. Electrically Tunable and Negative Schottky Barriers in Multi-layered Graphene/MoS2 Heterostructured Transistors

    PubMed Central

    Qiu, Dongri; Kim, Eun Kyu

    2015-01-01

    We fabricated multi-layered graphene/MoS2 heterostructured devices by positioning mechanically exfoliated bulk graphite and single-crystalline 2H-MoS2 onto Au metal pads on a SiO2/Si substrate via a contamination-free dry transfer technique. We also studied the electrical transport properties of Au/MoS2 junction devices for systematic comparison. A previous work has demonstrated the existence of a positive Schottky barrier height (SBH) in the metal/MoS2 system. However, analysis of the SBH indicates that the contacts of the multi-layered graphene/MoS2 have tunable negative barriers in the range of 300 to −46 meV as a function of gate voltage. It is hypothesized that this tunable SBH is responsible for the modulation of the work function of the thick graphene in these devices. Despite the large number of graphene layers, it is possible to form ohmic contacts, which will provide new opportunities for the engineering of highly efficient contacts in flexible electronics and photonics. PMID:26333680

  8. Perpendicular magnetic tunnel junctions with double barrier and single or synthetic antiferromagnetic storage layer

    SciTech Connect

    Cuchet, Léa; Rodmacq, Bernard; Auffret, Stéphane; Sousa, Ricardo C.; Prejbeanu, Ioan L.; Dieny, Bernard

    2015-06-21

    The magnetic properties of double tunnel junctions with perpendicular anisotropy were investigated. Two synthetic antiferromagnetic references are used, while the middle storage magnetic layer can be either a single ferromagnetic or a synthetic antiferromagnetic FeCoB-based layer, with a critical thickness as large as 3.0 nm. Among the different achievable magnetic configurations in zero field, those with either antiparallel references, and single ferromagnetic storage layer, or parallel references, and synthetic antiferromagnetic storage layer, are of particular interest since they allow increasing the efficiency of spin transfer torque writing and the thermal stability of the stored information as compared to single tunnel junctions. The latter configuration can be preferred when stray fields would favour a parallel orientation of the reference layers. In this case, the synthetic antiferromagnetic storage layer is also less sensitive to residual stray fields.

  9. Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices

    DOEpatents

    Jie, Qing; Ren, Zhifeng; Chen, Gang

    2015-12-08

    Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi.sub.2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi.sub.2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer "second layer" disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 .mu..OMEGA.cm.sup.2.

  10. Formation and investigation of ultrathin layers of Co2FeSi ferromagnetic alloy synthesized on silicon covered with a CaF2 barrier layer

    NASA Astrophysics Data System (ADS)

    Grebenyuk, G. S.; Gomoyunova, M. V.; Pronin, I. I.; Vyalikh, D. V.; Molodtsov, S. L.

    2016-03-01

    Ultrathin (∼2 nm) films of Co2FeSi ferromagnetic alloy were formed on silicon by solid-phase epitaxy and studied in situ. Experiments were carried out in an ultrahigh vacuum (UHV) using substrates of Si(1 1 1) single crystals covered with a 5 nm thick CaF2 barrier layer. The elemental and phase composition as well as the magnetic properties of the synthesized films were analyzed by photoelectron spectroscopy using synchrotron radiation and by magnetic linear dichroism in photoemission of Fe 3p and Co 3p electrons. The study shows that the synthesis of the Co2FeSi ferromagnetic alloy occurs in the temperature range of 200-400 °C. At higher temperatures, the films become island-like and lose their ferromagnetic properties, as the CaF2 barrier layer is unable to prevent a mass transfer between the film and the Si substrate, which violates the stoichiometry of the alloy.

  11. DFT simulations of inter-graphene-layer coupling with rotationally misaligned hBN tunnel barriers in graphene/hBN/graphene tunnel FETs

    NASA Astrophysics Data System (ADS)

    Valsaraj, Amithraj; Register, Leonard F.; Tutuc, Emanuel; Banerjee, Sanjay K.

    2016-10-01

    Van der Waal's heterostructures allow for novel devices such as two-dimensional-to-two-dimensional tunnel devices, exemplified by interlayer tunnel FETs. These devices employ channel/tunnel-barrier/channel geometries. However, during layer-by-layer exfoliation of these multi-layer materials, rotational misalignment is the norm and may substantially affect device characteristics. In this work, by using density functional theory methods, we consider a reduction in tunneling due to weakened coupling across the rotationally misaligned interface between the channel layers and the tunnel barrier. As a prototypical system, we simulate the effects of rotational misalignment of the tunnel barrier layer between aligned channel layers in a graphene/hBN/graphene system. We find that the rotational misalignment between the channel layers and the tunnel barrier in this van der Waal's heterostructure can significantly reduce coupling between the channels by reducing, specifically, coupling across the interface between the channels and the tunnel barrier. This weakened coupling in graphene/hBN/graphene with hBN misalignment may be relevant to all such van der Waal's heterostructures.

  12. Schottky barrier detection devices having a 4H-SiC n-type epitaxial layer

    SciTech Connect

    Mandal, Krishna C.; Terry, J. Russell

    2016-12-06

    A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface cut from planar to about 12.degree.; a buffer epitaxial layer on the substrate surface; a n-type epitaxial layer on the buffer epitaxial layer; and a top contact on the n-type epitaxial layer. The buffer epitaxial layer can include a n-type 4H--SiC epitaxial layer doped at a concentration of about 1.times.10.sup.15 cm.sup.-3 to about 5.times.10.sup.18 cm.sup.-3 with nitrogen, boron, aluminum, or a mixture thereof. The n-type epitaxial layer can include a n-type 4H--SiC epitaxial layer doped at a concentration of about 1.times.10.sup.13 cm.sup.-3 to about 5.times.10.sup.15 cm.sup.-3 with nitrogen. The top contact can have a thickness of about 8 nm to about 15 nm.

  13. Preparation of low-sulfur platinum and platinum aluminide layers in thermal barrier coatings

    NASA Technical Reports Server (NTRS)

    Spitsberg, Irene T. (Inventor); Walston, William S. (Inventor); Schaeffer, Jon C. (Inventor)

    2003-01-01

    A method for preparing a coated nickel-base superalloy article reduces the sulfur content of the surface region of the metallic coating layers to low levels, thereby improving the adhesion of the coating layers to the article. The method includes depositing a first layer of platinum overlying the surface of a substrate, depositing a second layer of aluminum over the platinum, and final desulfurizing the article by heating the article to elevated temperature, preferably in hydrogen, and removing a small amount of material from the surface that was exposed during the step of heating. A ceramic layer may be deposited over the desulfurized article. The article may also be similarly desulfurized at other points in the fabrication procedure.

  14. High Resistivity Molecular Beam Epitaxial AlGaAs for Device Applications.

    DTIC Science & Technology

    1980-02-01

    V MESFET technology requires, in part, the improvement of semi-insulating materials used in today’s device fabrication. The properties of currently...overall improvement in low temperature Hall mobility. Several techniques have been used to characterize AlGaAs properties. Basic determinations of impurity...available chromium-doped GaAs substrates impose restrictions on the performance of devices and monolithic circuits presently being produced in research

  15. Thickness scaling effect on interfacial barrier and electrical contact to two-dimensional MoS2 layers.

    PubMed

    Li, Song-Lin; Komatsu, Katsuyoshi; Nakaharai, Shu; Lin, Yen-Fu; Yamamoto, Mahito; Duan, Xiangfeng; Tsukagoshi, Kazuhito

    2014-12-23

    Understanding the interfacial electrical properties between metallic electrodes and low-dimensional semiconductors is essential for both fundamental science and practical applications. Here we report the observation of thickness reduction induced crossover of electrical contact at Au/MoS2 interfaces. For MoS2 thicker than 5 layers, the contact resistivity slightly decreases with reducing MoS2 thickness. By contrast, the contact resistivity sharply increases with reducing MoS2 thickness below 5 layers, mainly governed by the quantum confinement effect. We find that the interfacial potential barrier can be finely tailored from 0.3 to 0.6 eV by merely varying MoS2 thickness. A full evolution diagram of energy level alignment is also drawn to elucidate the thickness scaling effect. The finding of tailoring interfacial properties with channel thickness represents a useful approach controlling the metal/semiconductor interfaces which may result in conceptually innovative functionalities.

  16. MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers

    NASA Astrophysics Data System (ADS)

    Mizunuma, K.; Ikeda, S.; Park, J. H.; Yamamoto, H.; Gan, H.; Miura, K.; Hasegawa, H.; Hayakawa, J.; Matsukura, F.; Ohno, H.

    2009-12-01

    The authors studied an effect of ferromagnetic (Co20Fe60B20 or Fe) layer insertion on tunnel magnetoresistance (TMR) properties of MgO-barrier magnetic tunnel junctions (MTJs) with CoFe/Pd multilayer electrodes. TMR ratio in MTJs with CoFeB/MgO/Fe stack reached 67% at annealing temperature (Ta) of 200 °C and then decreased rapidly at Ta over 250 °C. The degradation of the TMR ratio may be related to crystallization of CoFe(B) into fcc(111) or bcc(011) texture resulting from diffusion of B into Pd layers. MTJs which were in situ annealed at 350 °C just after depositing bottom CoFe/Pd multilayer showed TMR ratio of 78% by postannealing at Ta=200 °C.

  17. Low-temperature gas-barrier films by atomic layer deposition for encapsulating organic light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Tseng, Ming-Hung; Yu, Hui-Huan; Chou, Kun-Yi; Jou, Jwo-Huei; Lin, Kung-Liang; Wang, Chin-Chiun; Tsai, Feng-Yu

    2016-07-01

    Dependences of gas-barrier performance on the deposition temperature of atomic-layer-deposited (ALD) Al2O3, HfO2, and ZnO films were studied to establish low-temperature ALD processes for encapsulating organic light-emitting diodes (OLEDs). By identifying and controlling the key factors, i.e. using H2O2 as an oxidant, laminating Al2O3 with HfO2 or ZnO layers into AHO or AZO nanolaminates, and extending purge steps, OLED-acceptable gas-barrier performance (water vapor transmission rates ˜ 10-6 g m-2 d-1) was achieved for the first time at a low deposition temperature of 50 °C in a thermal ALD mode. The compatibility of the low-temperature ALD process with OLEDs was confirmed by applying the process to encapsulate different types of OLED devices, which were degradation-free upon encapsulation and showed adequate lifetime during accelerated aging tests (pixel shrinkage <5% after 240 h at 60 °C/90% RH).

  18. CdTe nBn photodetectors with ZnTe barrier layer grown on InSb substrates

    NASA Astrophysics Data System (ADS)

    He, Zhao-Yu; Campbell, Calli M.; Lassise, Maxwell B.; Lin, Zhi-Yuan; Becker, Jacob J.; Zhao, Yuan; Boccard, Mathieu; Holman, Zachary; Zhang, Yong-Hang

    2016-09-01

    We have demonstrated an 820 nm cutoff CdTe nBn photodetector with ZnTe barrier layer grown on an InSb substrate. At room temperature, under a bias of -0.1 V, the photodetector shows Johnson and shot noise limited specific detectivity (D*) of 3 × 1013 cm Hz1/2/W at a wavelength of 800 nm and 2 × 1012 cm Hz1/2/W at 200 nm. The D* is optimized by using a top contact design of ITO/undoped-CdTe. This device not only possesses nBn advantageous characteristics, such as generation-recombination dark current suppression and voltage-bias-addressed two-color photodetection, but also offers features including responsivity enhancements by deep-depletion and by using a heterostructure ZnTe barrier layer. In addition, this device provides a platform to study nBn device physics at room temperature, which will help us to understand more sophisticated properties of infrared nBn photodetectors that may possess a large band-to-band tunneling current at a high voltage bias, because this current is greatly suppressed in the large-bandgap CdTe nBn photodetector.

  19. In Situ XPS Chemical Analysis of MnSiO3 Copper Diffusion Barrier Layer Formation and Simultaneous Fabrication of Metal Oxide Semiconductor Electrical Test MOS Structures.

    PubMed

    Byrne, Conor; Brennan, Barry; McCoy, Anthony P; Bogan, Justin; Brady, Anita; Hughes, Greg

    2016-02-03

    Copper/SiO2/Si metal-oxide-semiconductor (MOS) devices both with and without a MnSiO3 barrier layer at the Cu/SiO2 interface have been fabricated in an ultrahigh vacuum X-ray photoelectron spectroscopy (XPS) system, which allows interface chemical characterization of the barrier formation process to be directly correlated with electrical testing of barrier layer effectiveness. Capacitance voltage (CV) analysis, before and after tube furnace anneals of the fabricated MOS structures showed that the presence of the MnSiO3 barrier layer significantly improved electric stability of the device structures. Evidence of improved adhesion of the deposited copper layer to the MnSiO3 surface compared to the clean SiO2 surface was apparent both from tape tests and while probing the samples during electrical testing. Secondary ion mass spectroscopy (SIMS) depth profiling measurements of the MOS test structures reveal distinct differences of copper diffusion into the SiO2 dielectric layers following the thermal anneal depending on the presence of the MnSiO3 barrier layer.

  20. MEANS II: Knowledge Oriented Materials Engineering of Layered Thermal Barrier Systems (NOMELT)

    DTIC Science & Technology

    2008-06-22

    metallic bond coat (BC) interlayer between the superalloy substrate and the thermally insulating ceramic top layer. The primary purpose of the BC layer...overlay coatings . An advantage of overlay coatings is that a specific composition can be placed on the superalloy surface without significant initial...deposited on a 2nd generation single crystal PWA1484 superalloy substrate. The NiCoCrAlY bond coat with nominal composition in Table 1 [19] was

  1. In situ determination of the pore opening point during wet-chemical etching of the barrier layer of porous anodic aluminum oxide: nonuniform impurity distribution in anodic oxide.

    PubMed

    Han, Hee; Park, Sang-Joon; Jang, Jong Shik; Ryu, Hyun; Kim, Kyung Joong; Baik, Sunggi; Lee, Woo

    2013-04-24

    Wet-chemical etching of the barrier oxide layer of anodic aluminum oxide (AAO) was systematically investigated by using scanning electron microscopy (SEM), secondary ion mass spectrometry (SIMS), and a newly devised experimental setup that allows accurate in situ determination of the pore opening point during chemical etching of the barrier oxide layer. We found that opening of the barrier oxide layer by wet-chemical etching can be significantly influenced by anodization time (tanodi). According to secondary ion mass spectrometry (SIMS) analysis, porous anodic aluminum oxide (AAO) samples formed by long-term anodization contained a lower level of anionic impurity in the barrier oxide layer compared to the short-term anodized one and consequently exhibited retarded opening of the barrier oxide layer during the wet-chemical etching. The observed compositional dependence on the anodization time (tanodi) in the barrier oxide layer is attributed to the progressive decrease of the electrolyte concentration upon anodization. The etching rate of the outer pore wall at the bottom part is lower than that of the one at the top part due to the lower level of impurity content in that region. This indicates that a concentration gradient of anionic impurity in the outer pore wall oxide may be established along both the vertical and radial directions of cylindrical pores. Apart from the effect of electrolyte concentration on the chemical composition of the barrier oxide layer, significantly decreased current density arising from the lowered concentration of electrolyte during the long-term anodization (~120 h) was found to cause disordering of pores. The results of the present work are expected to provide viable information not only for practical applications of nanoporous AAO in nanotechnology but also for thorough understanding of the self-organized formation of oxide nanopores during anodization.

  2. Diffusion barriers

    NASA Technical Reports Server (NTRS)

    Nicolet, M. A.

    1983-01-01

    The choice of the metallic film for the contact to a semiconductor device is discussed. One way to try to stabilize a contact is by interposing a thin film of a material that has low diffusivity for the atoms in question. This thin film application is known as a diffusion barrier. Three types of barriers can be distinguished. The stuffed barrier derives its low atomic diffusivity to impurities that concentrate along the extended defects of a polycrystalline layer. Sacrificial barriers exploit the fact that some (elemental) thin films react in a laterally uniform and reproducible fashion. Sacrificial barriers have the advantage that the point of their failure is predictable. Passive barriers are those most closely approximating an ideal barrier. The most-studied case is that of sputtered TiN films. Stuffed barriers may be viewed as passive barriers whose low diffusivity material extends along the defects of the polycrystalline host.

  3. Barrier efficiency of sponge-like La2Zr2O7 buffer layers for YBCO-coated conductors

    NASA Astrophysics Data System (ADS)

    Molina, Leopoldo; Tan, Haiyan; Biermans, Ellen; Batenburg, Kees J.; Verbeeck, Jo; Bals, Sara; Van Tendeloo, Gustaaf

    2011-06-01

    Solution derived La2Zr2O7 films have drawn much attention for potential applications as thermal barriers or low-cost buffer layers for coated conductor technology. Annealing and coating parameters strongly affect the microstructure of La2Zr2O7, but different film processing methods can yield similar microstructural features such as nanovoids and nanometer-sized La2Zr2O7 grains. Nanoporosity is a typical feature found in such films and the implications for the functionality of the films are investigated by a combination of scanning transmission electron microscopy (STEM), electron energy-loss spectroscopy (EELS) and quantitative electron tomography. Chemical solution based La2Zr2O7 films deposited on flexible Ni-5 at.%W substrates with a {100}lang001rang biaxial texture were prepared for an in-depth characterization. A sponge-like structure composed of nanometer-sized voids is revealed by high-angle annular dark-field scanning transmission electron microscopy in combination with electron tomography. A three-dimensional quantification of nanovoids in the La2Zr2O7 film is obtained on a local scale. Mostly non-interconnected highly faceted nanovoids compromise more than one-fifth of the investigated sample volume. The diffusion barrier efficiency of a 170 nm thick La2Zr2O7 film is investigated by STEM-EELS, yielding a 1.8 ± 0.2 nm oxide layer beyond which no significant nickel diffusion can be detected and intermixing is observed. This is of particular significance for the functionality of YBa2Cu3O7 - δ coated conductor architectures based on solution derived La2Zr2O7 films as diffusion barriers.

  4. AlGaAs ridge laser with 33% wall-plug efficiency at 100 °C based on a design of experiments approach

    NASA Astrophysics Data System (ADS)

    Fecioru, Alin; Boohan, Niall; Justice, John; Gocalinska, Agnieszka; Pelucchi, Emanuele; Gubbins, Mark A.; Mooney, Marcus B.; Corbett, Brian

    2016-04-01

    Upcoming applications for semiconductor lasers present limited thermal dissipation routes demanding the highest efficiency devices at high operating temperatures. This paper reports on a comprehensive design of experiment optimisation for the epitaxial layer structure of AlGaAs based 840 nm lasers for operation at high temperature (100 °C) using Technology Computer-Aided Design software. The waveguide thickness, Al content, doping level, and quantum well thickness were optimised. The resultant design was grown and the fabricated ridge waveguides were optimised for carrier injection and, at 100 °C, the lasers achieve a total power output of 28 mW at a current of 50 mA, a total slope efficiency 0.82 W A-1 with a corresponding wall-plug efficiency of 33%.

  5. In-situ analysis of optoelectronic properties of twin boundaries in AlGaAs by polarized cathodoluminescence spectroscopy in a TEM.

    PubMed

    Ohno, Yutaka

    2010-08-01

    Optoelectronic properties of nanoscale twin boundaries (TBs) in indirect-gap AlGaAs layers were studied by polarized cathodoluminescence spectroscopy in a transmission electron microscope. TBs arranged orderly in a short range, i.e. four or more parallel TBs arranged at regular intervals of nanometre length, emitted an intense monochromatic light polarized parallel to the boundaries. The intensity and the photon energy of the light were examined at different temperatures with different electron fluxes, and the origin of the light was discussed based on a twinning superlattice model. According to the study, it was suggested that the photon energy is tunable by controlling the intervals of TBs, without changing the crystal structure and the composition.

  6. Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic

    NASA Astrophysics Data System (ADS)

    Lei, Wenwen; Li, Xingcun; Chen, Qiang; Wang, Zhengduo

    2012-02-01

    Atomic layer deposition (ALD) technique is used in the preparation of organic/inorganic layers, which requires uniform surfaces with their thickness down to several nanometers. For film with such thickness, the growth mode defined as the arrangement of clusters on the surface during the growth is of significance. In this work, Al2O3 thin film was deposited on various interfacial species of pre-treated polyethylene terephthalate (PET, 12 μm) by plasma assisted atomic layer deposition (PA-ALD), where trimethyl aluminium was used as the Al precursor and O2 as the oxygen source. The interfacial species, -NH3, -OH, and -COOH as well as SiCHO (derived from monomer of HMDSO plasma), were grafted previously by plasma and chemical treatments. The growth mode of PA-ALD Al2O3 was then investigated in detail by combining results from in-situ diagnosis of spectroscopic ellipsometry (SE) and ex-situ characterization of as-deposited layers from the morphologies scanned by atomic force microscopy (AFM). In addition, the oxygen transmission rates (OTR) of the original and treated plastic films were measured. The possible reasons for the dependence of the OTR values on the surface species were explored.

  7. Tunnel barrier enhanced voltage signals generated by magnetization precession of a single ferromagnetic layer

    NASA Astrophysics Data System (ADS)

    Moriyama, Takahiro

    2009-03-01

    A variety of experimentally observed phenomena involving nonlocal magnetization dynamics in magnetic multilayers are due to two complementary effects: (i) the transfer of spin angular momentum accompanying charge currents driven by the applied bias voltage between ferromagnetic layers results in torques that (for sufficiently high current densities) generate spontaneous magnetization precession and switching; and (ii) the precessing magnetization of a ferromagnet (FM) pumps spins into adjacent normal metal layers (NM) with no applied bias. In particular, the spin pumping effect is a promising candidate for realizing a spin battery device [1] as a source of elusive pure spin currents (not accompanied by any net charge transport) emitted at the FM/NM interface, where steady magnetization precession of the FM layer is sustained by the absorption of external rf radiation under the FMR conditions. We report the electrical detection of magnetization dynamics in an Al/AlOx/Ni80Fe20/Cu tunnel junction, where a Ni80Fe20 ferromagnetic layer is brought into precession under the ferromagnetic resonance (FMR) conditions. The dc voltage generated across the junction by the precessing ferromagnet is enhanced about an order of magnitude compared to the voltage signal observed in Cu/FeNi/Pt structures [2]. A structure of Cu (100nm)/Al (10nm)/AlOx (2.3nm)/Ni80Fe20 (20nm)/Cu (70nm)/Au (25nm) was fabricated on a Si substrate with a 1μm thick thermal oxide layer. The bottom-most 100 nm Cu layer was patterned into a coplanar waveguide (CPW) and the rest of the structure was patterned into a pillar structure on the signal line of the CPW. Dc voltages ˜μV were observed in the Al/AlOx/Ni80Fe20/Cu tunnel junction when the Ni80Fe20 is in the ferromagnetic resonance. The dc voltages increase as the precession cone angle and frequency increase. We discuss the relation of this phenomenon to magnetic spin pumping and speculate on other possible underlying mechanisms responsible for the

  8. Thermoelastic characteristics of thermal barrier coatings with layer thickness and edge conditions through mathematical analysis.

    PubMed

    Go, Jaegwi; Myoung, Sang-Won; Lee, Je-Hyun; Jung, Yeon-Gil; Kim, Seokchan; Paik, Ungyu

    2014-10-01

    The thermoelastic behaviors of such as temperature distribution, displacements, and stresses in thermal barrier coatings (TBCs) are seriously influenced by top coat thickness and edge conditions, which were investigated based on the thermal and mechanical properties of plasma-sprayed TBCs. A couple of governing partial differential equations were derived based on the thermoelastic theory. Since the governing equations are too involved to solve analytically, a finite volume method was developed to obtain approximations. The thermoelastic characteristics of TBCs with the various thicknesses and microstructures were estimated through mathematical approaches with different edge conditions. The results demonstrated that the top coat thickness and the edge condition in theoretical analysis are crucial factors to be considered in controlling the thermoelastic characteristics of plasma-sprayed TBCs.

  9. On the optimization of asymmetric barrier layers in InAlGaAs/AlGaAs laser heterostructures on GaAs substrates

    SciTech Connect

    Zhukov, A. E.; Asryan, L. V.; Semenova, E. S.; Zubov, F. I.; Kryzhanovskaya, N. V.; Maximov, M. V.

    2015-07-15

    Band offsets at the heterointerface are calculated for various combinations of InAlGaAs/AlGaAs heteropairs that can be synthesized on GaAs substrates in the layer-by-layer pseudomorphic growth mode. Patterns which make it possible to obtain an asymmetric barrier layer providing the almost obstruction-free transport of holes and the highest possible barrier height for electrons are found. The optimal compositions of both compounds (In{sup 0.232}Al{sup 0.594}Ga{sup 0.174}As/Al{sup 0.355}Ga{sup 0.645}As) at which the flux of electrons across the barrier is at a minimum are determined with consideration for the critical thickness of the indium-containing quaternary solid solution.

  10. The origin of low water vapor transmission rates through Al2O3/ZrO2 nanolaminate gas-diffusion barriers grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Meyer, J.; Schmidt, H.; Kowalsky, W.; Riedl, T.; Kahn, A.

    2010-06-01

    This paper reports on thin film gas-diffusion barriers consisting of Al2O3/ZrO2 nanolaminates (NL) grown by low-temperature (80 °C) atomic layer deposition. We show that reliable barriers with water vapor transmission rates of 3.2×10-4 g/(m2 day), measured at 80 °C and 80% relative humidity, can be realized with very thin layers down to 40 nm. We determine that ZrO2 acts as anticorrosion element in our NL. Furthermore, we demonstrate by x-ray photoemission spectroscopy that an aluminate phase is formed at the interfaces between Al2O3 and ZrO2 sublayers, which additionally improves the gas-diffusion barrier due to a densification of the layer system. These Al2O3/ZrO2 NLs prepared at low temperatures hold considerable promises for application in organic electronics and beyond.

  11. Nanometer-thick amorphous-SnO2 layer as an oxygen barrier coated on a transparent AZO electrode

    NASA Astrophysics Data System (ADS)

    Lee, Hee Sang; Woo, Seong Ihl

    2016-07-01

    It is necessary for transparent conducting electrodes used in dye-sensitized or perovskite solar cells to have high thermal stability which is required when TiO2 is coated on the electrode. AZO films with their low-cost and good TCO properties are unfortunately unstable above 300 °C in air because of adsorbed oxygen. In this paper, the thermal stability of AZO films is enhanced by depositing an oxygen barrier on AZO films to block the oxygen. As the barrier material, SnO2 is used due to its high heat stability, electrical conductivity, and transmittance. Moreover, when the SnO2 is grown as amorphous phase, the protective effect become greater than the crystalline phase. The thermal stability of the amorphous-SnO2/AZO films varies depending on the thickness of the amorphous SnO2 layer. Because of the outstanding oxygen blocking properties of amorphous SnO2, its optimal thickness is very thin and it results in only a slight decrease in transmittance. The sheet resistance of the amorphous-SnO2/AZO film is 5.4 Ω sq-1 after heat treatment at 500 °C for 30 min in air and the average transmittance in the visible region is 83.4%. The results show that the amorphous-SnO2/AZO films have thermal stability with excellent electrical and optical properties. [Figure not available: see fulltext.

  12. Annual layers revealed by GPR in the subsurface of a prograding coastal barrier, southwest Washington, U.S.A

    USGS Publications Warehouse

    Moore, L.J.; Jol, H.M.; Kruse, S.; Vanderburgh, S.; Kaminsky, G.M.

    2004-01-01

    The southwest Washington coastline has experienced extremely high rates of progradation during the late Holocene. Subsurface stratigraphy, preserved because of progradation and interpreted using ground-penetrating radar (GPR), has previously been used successfully to document coastal response to prehistoric storm and earthquake events. New GPR data collected at Ocean Shores, Washington, suggest that the historic stratigraphy of the coastal barrier in this area represents a higher resolution record of coastal behavior than previously thought. GPR records for this location at 200 MHz reveal a series of gently sloping, seaward-dipping reflections with slopes similar to the modern beach and spacings on the order of 20-45 cm. Field evidence and model results suggest that thin (1-10 cm), possibly magnetite-rich, heavy-mineral lags or low-porosity layers left by winter storms and separated by thick (20-40 cm) summer progradational sequences are responsible for generating the GPR reflections. These results indicate that a record of annual progradation is preserved in the subsurface of the prograding barrier and can be quantified using GPR. Such records of annual coastal behavior, where available, will be invaluable in understanding past coastal response to climatic and tectonic forcing. ?? 2004.

  13. Performance enhancement of AlGaN deep-ultraviolet light-emitting diodes with varied superlattice barrier electron blocking layer

    NASA Astrophysics Data System (ADS)

    Liu, Songqing; Ye, Chunya; Cai, Xuefen; Li, Shuping; Lin, Wei; Kang, Junyong

    2016-05-01

    The AlGaN-based deep-UV LEDs with specific design of varied superlattice barrier electron blocking layer (EBL) has been investigated numerically by APSYS software. The proposed structure exhibits significant improvement in the light output power, internal quantum efficiency, current-voltage curve and electroluminescence intensity. After analyzing the profiles of energy band diagrams, carriers concentration and radiative recombination rate, we find the main advantages of proposed structure are ascribed to higher barrier suppressing electron leakage and reduced barrier for hole injection. Thus, compared with reference sample, the proposed EBL design may be a good method for improving the whole performance of UV LEDs.

  14. Microstructure of Josephson junctions: Effect on supercurrent transport in YBCO grain boundary and barrier layer junctions

    SciTech Connect

    Merkle, K.L.; Huang, Y.

    1998-01-01

    The electric transport of high-temperature superconductors, such as YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} (YBCO), can be strongly restricted by the presence of high-angle grain boundaries (GB). This weak-link behavior is governed by the macroscopic GB geometry and the microscopic grain boundary structure and composition at the atomic level. Whereas grain boundaries present a considerable impediment to high current applications of high T{sub c} materials, there is considerable commercial interest in exploiting the weak-link-nature of grain boundaries for the design of microelectronic devices, such as superconducting quantum interference devices (SQUIDs). The Josephson junctions which form the basis of this technology can also be formed by introducing artificial barriers into the superconductor. The authors have examined both types of Josephson junctions by EM techniques in an effort to understand the connection between microstructure/chemistry and electrical transport properties. This knowledge is a valuable resource for the design and production of improved devices.

  15. High-power AlGaAs channeled substrate planar diode lasers for spaceborne communications

    NASA Technical Reports Server (NTRS)

    Connolly, J. C.; Goldstein, B.; Pultz, G. N.; Slavin, S. E.; Carlin, D. B.; Ettenberg, M.

    1988-01-01

    A high power channeled substrate planar AlGaAs diode laser with an emission wavelength of 8600 to 8800 A was developed. The optoelectronic behavior (power current, single spatial and spectral behavior, far field characteristics, modulation, and astigmatism properties) and results of computer modeling studies on the performance of the laser are discussed. Lifetest data on these devices at high output power levels is also included. In addition, a new type of channeled substrate planar laser utilizing a Bragg grating to stabilize the longitudinal mode was demonstrated. The fabrication procedures and optoelectronic properties of this new diode laser are described.

  16. Photoluminescence of individual doped GaAs /AlGaAs nanofabricated quantum dots

    NASA Astrophysics Data System (ADS)

    Kalliakos, Sokratis; García, César Pascual; Pellegrini, Vittorio; Zamfirescu, Marian; Cavigli, Lucia; Gurioli, Massimo; Vinattieri, Anna; Pinczuk, Aron; Dennis, Brian S.; Pfeiffer, Loren N.; West, Ken W.

    2007-04-01

    Dilute arrays of GaAs /AlGaAs modulation-doped quantum dots with same sizes fabricated by electron beam lithography and low impact reactive ion etching exhibit highly uniform luminescence lines. Single quantum dots display spectral emission with peak energies and linewidths linked largely to the geometrical diameter of the dot and to the built-in electron population. Multicharged excitonic and biexcitonic emission intensities have activation energy of about 2meV. These results highlight the potential of high quality nanofabricated quantum dots for applications in areas that require fine control of optical emission.

  17. Photon pair sources in AlGaAs: from electrical injection to quantum state engineering

    NASA Astrophysics Data System (ADS)

    Autebert, C.; Boucher, G.; Boitier, F.; Eckstein, A.; Favero, I.; Leo, G.; Ducci, S.

    2015-11-01

    Integrated quantum photonics is a very active field of quantum information, communication, and processing. One of the main challenges to achieve massively parallel systems for complex operations is the generation, manipulation, and detection of many qubits within the same chip. Here, we present our last achievements on AlGaAs quantum photonic devices emitting nonclassical states of light at room temperature by spontaneous parametric down conversion (SPDC). The choice of this platform combines the advantages of a mature fabrication technology, a high nonlinear coefficient, a SPDC wavelength in the C-telecom band and the possibility of electrical injection.

  18. The mucus layer is critical in protecting against ischemia-reperfusion-mediated gut injury and in the restitution of gut barrier function.

    PubMed

    Qin, Xiaofa; Sheth, Sharvil U; Sharpe, Susan M; Dong, Wei; Lu, Qi; Xu, Dazhong; Deitch, Edwin A

    2011-03-01

    It is well documented that the gut injury plays a critical role in the development of systemic inflammation and distant organ injury in conditions associated with splanchnic ischemia. Consequently, understanding the mechanisms leading to gut injury is important. In this context, recent work suggests a protective role for the intestinal mucus layer and an injury-inducing role for luminal pancreatic proteases. Thus, we explored the role of the mucus layer in gut barrier function by observing how the removal of the mucus layer affects ischemia-reperfusion-mediated gut injury in rats as well as the potential role of luminal pancreatic proteases in the pathogenesis of gut injury. Ischemia was induced by the ligation of blood vessels to segments of the ileum for 45 min, followed by up to 3 h of reperfusion. The ileal segments were divided into five groups. These included a nonischemic control, ischemic segments exposed to saline, the mucolytic N-acetylcysteine (NAC), pancreatic proteases, or NAC + pancreatic proteases. Changes in gut barrier function were assessed by the permeation of fluorescein isothiocyanate dextran (molecular weight, 4,000 d) in ileal everted sacs. Gut injury was measured morphologically and by the luminal content of protein, DNA, and hemoglobin. The mucus layer was assessed functionally by measuring its hydrophobicity and morphologically. Gut barrier function was promptly and effectively reestablished during reperfusion, which was accompanied by the restoration of the mucus layer. In contrast, treatment of the gut with the mucolytic NAC for 10 min during ischemia resulted in a failure of mucus restitution and further increases in gut permeability and injury. The presence of digestive proteases by themselves did not exacerbate gut injury, but in combination with NAC, they caused an even greater increase in gut injury and permeability. These results suggest that the mucus layer not only serves as a barrier between the luminal contents and gut surface

  19. Electrical activation of carbon δ-doped (Al,Ga)As grown by metalorganic vapour-phase epitaxy

    NASA Astrophysics Data System (ADS)

    Li, G.; Petravić, M.; Jagadish, C.

    1997-04-01

    Carbon δ-doped (Al,Ga)As was grown by metalorganic vapour-phase epitaxy using trimethylaluminium (TMAl) or trimethylgallium (TMGa) as a doping precursor. The best C δ-doped Al 0.3Ga 0.7As has a peak hole density of 1.6 × 10 19 (1.4 × 10 19 for GaAs) cm -3 with a full hole profile width at half maximum of 85 Å (84 Å for GaAs). For C δ-doped Al 0.3Ga 0.7 As grown at 630°C, the use of TMGa as a doping precursor leads to both the sheet C atom density and the free hole density increasing with an increase in the total TMGa moles introduced during a δ-doping step. As a result, the electrical activation remains almost constant with the change of TMGa moles supplied. The sheet C atom density always increases with increasing supply of TMAl, but approaches its maximum value at an amount of TMAl of 6.4 × 10 -7 mol. The electrical activation reduces from > 90% to < 10% when the supply of TMAl increases from 2.1 × 10 -7 to 8 × 10 -7 mol. Regardless of the doping precursors, the hole density weakly decreases and the C atom density significantly increases with increasing growth temperature. Low growth temperatures are required for high electrical activation. Using optimised growth conditions, C δ-doped pipi doping superlattices with different average hole densities are fabricated to obtain C bulk-doped-like layers.

  20. Integration of molecular-layer-deposited aluminum alkoxide interlayers into inorganic nanolaminate barriers for encapsulation of organic electronics with improved stress resistance

    SciTech Connect

    Hossbach, Christoph Fischer, Dustin; Albert, Matthias; Bartha, Johann W.; Nehm, Frederik Klumbies, Hannes; Müller-Meskamp, Lars; Leo, Karl; Singh, Aarti; Richter, Claudia; Schroeder, Uwe; Mikolajick, Thomas

    2015-01-15

    Diffusion barrier stacks for the encapsulation of organic electronics made from inorganic nanolaminates of Al{sub 2}O{sub 3} and TiO{sub 2} with aluminum alkoxide interlayers have been deposited by atomic layer deposition (ALD) and molecular layer deposition (MLD). As a part of the MLD process development, the deposition of aluminum alkoxide with low a density of about 1.7 g/cm{sup 3} was verified. The ALD/MLD diffusion barrier stack is meant to be deposited either on a polymer film, creating a flexible barrier substrate, or on top of a device on glass, creating a thin-film encapsulation. In order to measure the water vapor transmission rate (WVTR) through the barrier, the device is replaced by a calcium layer acting as a water sensor in an electrical calcium test. For the barrier stack applied as thin-film encapsulation on glass substrates, high resolution scanning electron microscopy investigations indicate that the inorganic nanolaminates without MLD interlayers are brittle as they crack easily upon the stress induced by the corroding calcium below. The introduction of up to three MLD interlayers of 12 nm each into the 48 nm barrier film laminate successfully mitigates stress issues and prevents the barrier from cracking. Using the three MLD interlayer configurations on glass, WVTRs of as low as 10{sup −5} g/m{sup 2}/d are measured at 38 °C and 32% relative humidity. On polymer barrier substrates, the calcium is evaporated onto the barrier stack and encapsulated with a cavity glass. In this configuration, the corroding calcium has space for expansion and gas release without affecting the underlying barrier film. In consequence, a WVTR of about 3 × 10{sup −3} g/m{sup 2}/d is measured for all samples independently of the number of MLD interlayers. In conclusion, a stabilization and preservation of the ALD barrier film against mechanical stress is achieved by the introduction of MLD interlayers into the inorganic nanolaminate.

  1. Multilayer moisture barrier

    DOEpatents

    Pankow, Joel W; Jorgensen, Gary J; Terwilliger, Kent M; Glick, Stephen H; Isomaki, Nora; Harkonen, Kari; Turkulainen, Tommy

    2015-04-21

    A moisture barrier, device or product having a moisture barrier or a method of fabricating a moisture barrier having at least a polymer layer, and interfacial layer, and a barrier layer. The polymer layer may be fabricated from any suitable polymer including, but not limited to, fluoropolymers such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), or ethylene-tetrafluoroethylene (ETFE). The interfacial layer may be formed by atomic layer deposition (ALD). In embodiments featuring an ALD interfacial layer, the deposited interfacial substance may be, but is not limited to, Al.sub.2O.sub.3, AlSiO.sub.x, TiO.sub.2, and an Al.sub.2O.sub.3/TiO.sub.2 laminate. The barrier layer associated with the interfacial layer may be deposited by plasma enhanced chemical vapor deposition (PECVD). The barrier layer may be a SiO.sub.xN.sub.y film.

  2. AlGaAs film growth using thermionic vacuum arc (TVA) and determination of its physical properties

    NASA Astrophysics Data System (ADS)

    Özen, Soner; Şenay, Volkan; Pat, Suat; Korkmaz, Şadan

    2015-06-01

    In this research, an AlGaAs film was deposited on a microscope slide by means of the thermionic vacuum arc (TVA) technique which is a novel plasma production technique. AlGaAs structures were grown by this deposition technique for the first time and this process occurred in a very short period of time. In order to characterize the produced film, nano-structural, nano-mechanical, optical, and surface properties were determined by field emission scanning electron microscope (FESEM), atomic force microscope (AFM), X-ray diffractometer (XRD) and interferometer. According to the results of the measurements, the mean thickness value of the produced film was obtained as 1.8 μm. The band gap value was determined as 2eV from the Kubelka-Munk plot. The refractive index value was obtained as approximately 3.4. Hardness value was determined as 2 GPa from the Oliver-Pharr method. All these values are consistent with the reported values in the literature for the AlGaAs films produced by different methods. TVA technique appeared as a suitable and promising technique for the production of AlGaAs films.

  3. Differential absorption lidar measurements of atmospheric water vapor using a pseudonoise code modulated AlGaAs laser. Thesis

    NASA Technical Reports Server (NTRS)

    Rall, Jonathan A. R.

    1994-01-01

    Lidar measurements using pseudonoise code modulated AlGaAs lasers are reported. Horizontal path lidar measurements were made at night to terrestrial targets at ranges of 5 and 13 km with 35 mW of average power and integration times of one second. Cloud and aerosol lidar measurements were made to thin cirrus clouds at 13 km altitude with Rayleigh (molecular) backscatter evident up to 9 km. Average transmitter power was 35 mW and measurement integration time was 20 minutes. An AlGaAs laser was used to characterize spectral properties of water vapor absorption lines at 811.617, 816.024, and 815.769 nm in a multipass absorption cell using derivative spectroscopy techniques. Frequency locking of an AlGaAs laser to a water vapor absorption line was achieved with a laser center frequency stability measured to better than one-fifth of the water vapor Doppler linewidth over several minutes. Differential absorption lidar measurements of atmospheric water vapor were made in both integrated path and range-resolved modes using an externally modulated AlGaAs laser. Mean water vapor number density was estimated from both integrated path and range-resolved DIAL measurements and agreed with measured humidity values to within 6.5 percent and 20 percent, respectively. Error sources were identified and their effects on estimates of water vapor number density calculated.

  4. Pressure-dependent DLTS (Deep Level Transient Spectroscopy) experiments on Si-doped AlGaAs

    NASA Astrophysics Data System (ADS)

    Farmer, J. W.; Hjalmarson, H. P.; Samara, G. A.

    Pressure dependent Deep Level Transient Spectroscopy (DLTS) experiments are used to measure the properties of the deep donors (DX-centers) responsible for the persistent photoconductivity effect in Si-doped AlGaAs. The sample dependence of the DLTS spectra shows evidence for a defect complex involved in the DX-center.

  5. Seasonal variations in the barrier layer in the South China Sea: characteristics, mechanisms and impact of warming

    NASA Astrophysics Data System (ADS)

    Zeng, Lili; Wang, Dongxiao

    2017-03-01

    A new observational dataset, the South China Sea Physical Oceanographic Dataset 2014, is examined to investigate the seasonal characteristics, formation mechanisms, and warming effects of the barrier layer (BL) in the South China Sea (SCS). Statistical analysis reveals that the BL is thicker and occurs more frequently during summer and early autumn, while in winter it often coexists with temperature inversions. The formation mechanisms are discussed from the perspective of the controlling regime and the net turbulent energy required for BL evolution. In the initial stage (March-May), the BL is absent due to weak mixing, scarce rainfall and surface warming. In the formation and maintenance stage (June-September), the BL grows in summer and persists into the transition season. The BLs can be classified into three regimes: the flux regime (in the Luzon Strait), the combined regime (in the eastern basin) and the wind regime (southeast of Vietnam). In the attenuation stage (October-February), associated with the winter monsoon, the BL mainly occurs in the combined regime (along the path of western boundary current) and the flux regime (in the southeast corner). The characteristics and generation mechanisms of the temperature inversions near the south Chinese coast, east of Vietnam, and in the Gulf of Thailand are also discussed. Our analysis further demonstrates that the BL has a significant warming effect on upper ocean temperature and heat content in the SCS.

  6. Seasonal variations in the barrier layer in the South China Sea: characteristics, mechanisms and impact of warming

    NASA Astrophysics Data System (ADS)

    Zeng, Lili; Wang, Dongxiao

    2016-06-01

    A new observational dataset, the South China Sea Physical Oceanographic Dataset 2014, is examined to investigate the seasonal characteristics, formation mechanisms, and warming effects of the barrier layer (BL) in the South China Sea (SCS). Statistical analysis reveals that the BL is thicker and occurs more frequently during summer and early autumn, while in winter it often coexists with temperature inversions. The formation mechanisms are discussed from the perspective of the controlling regime and the net turbulent energy required for BL evolution. In the initial stage (March-May), the BL is absent due to weak mixing, scarce rainfall and surface warming. In the formation and maintenance stage (June-September), the BL grows in summer and persists into the transition season. The BLs can be classified into three regimes: the flux regime (in the Luzon Strait), the combined regime (in the eastern basin) and the wind regime (southeast of Vietnam). In the attenuation stage (October-February), associated with the winter monsoon, the BL mainly occurs in the combined regime (along the path of western boundary current) and the flux regime (in the southeast corner). The characteristics and generation mechanisms of the temperature inversions near the south Chinese coast, east of Vietnam, and in the Gulf of Thailand are also discussed. Our analysis further demonstrates that the BL has a significant warming effect on upper ocean temperature and heat content in the SCS.

  7. Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide

    NASA Astrophysics Data System (ADS)

    Fryauf, David M.; Phillips, Andrew C.; Kobayashi, Nobuhiko P.

    2015-10-01

    Astronomical telescopes continue to demand high-endurance high-reflectivity silver (Ag) mirrors that can withstand years of exposure in Earth-based observatory environments. We present promising results of improved Ag mirror robustness using plasma-enhanced atomic layer deposition (PEALD) of aluminum oxide (AlOx) as a top barrier layer. Transparent AlOx is suitable for many optical applications; therefore, it has been the initial material of choice for this study. Two coating recipes developed with electron beam ion-assisted deposition (e-beam IAD) of materials including yttrium fluoride, titanium nitride, oxides of yttrium, tantalum, and silicon are used to provide variations in basic Ag mirror structures to compare the endurance of reactive e-beam IAD barriers with PEALD barriers. Samples undergo high temperature/high humidity environmental testing in a controlled environment of 80% humidity at 80°C for 10 days. Environmental testing shows visible results suggesting that the PEALD AlOx barrier offers robust protection against chemical corrosion and moisture permeation. Ag mirror structures were further characterized by reflectivity/absorption before and after deposition of AlOx barriers.

  8. The importance of dye chemistry and TiCl4 surface treatment in the behavior of Al2O3 recombination barrier layers deposited by atomic layer deposition in solid-state dye-sensitized solar cells.

    PubMed

    Brennan, Thomas P; Bakke, Jonathan R; Ding, I-Kang; Hardin, Brian E; Nguyen, William H; Mondal, Rajib; Bailie, Colin D; Margulis, George Y; Hoke, Eric T; Sellinger, Alan; McGehee, Michael D; Bent, Stacey F

    2012-09-21

    Atomic layer deposition (ALD) was used to fabricate Al(2)O(3) recombination barriers in solid-state dye-sensitized solar cells (ss-DSSCs) employing an organic hole transport material (HTM) for the first time. Al(2)O(3) recombination barriers of varying thickness were incorporated into efficient ss-DSSCs utilizing the Z907 dye adsorbed onto a 2 μm-thick nanoporous TiO(2) active layer and the HTM spiro-OMeTAD. The impact of Al(2)O(3) barriers was also studied in devices employing different dyes, with increased active layer thicknesses, and with substrates that did not undergo the TiCl(4) surface treatment. In all instances, electron lifetimes (as determined by transient photovoltage measurements) increased and dark current was suppressed after Al(2)O(3) deposition. However, only when the TiCl(4) treatment was eliminated did device efficiency increase; in all other instances efficiency decreased due to a drop in short-circuit current. These results are attributed in the former case to the similar effects of Al(2)O(3) ALD and the TiCl(4) surface treatment whereas the insulating properties of Al(2)O(3) hinder charge injection and lead to current loss in TiCl(4)-treated devices. The impact of Al(2)O(3) barrier layers was unaffected by doubling the active layer thickness or using an alternative ruthenium dye, but a metal-free donor-π-acceptor dye exhibited a much smaller decrease in current due to its higher excited state energy. We develop a model employing prior research on Al(2)O(3) growth and dye kinetics that successfully predicts the reduction in device current as a function of ALD cycles and is extendable to different dye-barrier systems.

  9. In-situ surface and interface study of atomic oxygen modified carbon containing porous low-κ dielectric films for barrier layer applications

    NASA Astrophysics Data System (ADS)

    Bogan, J.; Lundy, R.; P. McCoy, A.; O'Connor, R.; Byrne, C.; Walsh, L.; Casey, P.; Hughes, G.

    2016-09-01

    The surface treatment of ultralow-κ dielectric layers by exposure to atomic oxygen is presented as a potential mechanism to modify the chemical composition of the dielectric surface to facilitate copper diffusion barrier layer formation. High carbon content, low-κ dielectric films of varying porosity were exposed to atomic oxygen treatments at room temperature, and x-ray photoelectron spectroscopy studies reveal both the depletion of carbon and the incorporation of oxygen at the surface. Subsequent dynamic water contact angle measurements show that the chemically modified surfaces become more hydrophilic after treatment, suggesting that the substrates have become more "SiO2-like" at the near surface region. This treatment is shown to be thermally stable up to 400 °C. High resolution electron energy loss spectroscopy elemental profiles confirm the localised removal of carbon from the surface region. Manganese (≈1 nm) was subsequently deposited on the modified substrates and thermally annealed to form surface localized MnSiO3 based barrier layers. The energy-dispersive X-ray spectroscopy elemental maps show that the atomic oxygen treatments facilitate the formation of a continuous manganese silicate barrier within dense low-k films, but significant manganese diffusion is observed in the case of porous substrates, negatively impacting the formation of a discrete barrier layer. Ultimately, the atomic oxygen treatment proves effective in modifying the surface of non-porous dielectrics while continuing to facilitate barrier formation. However, in the case of high porosity films, diffusion of manganese into the bulk film remains a critical issue.

  10. Influence of thermal stress on the relative permittivity of the AlGaN barrier layer in an AlGaN/GaN heterostructure Schottky contacts

    NASA Astrophysics Data System (ADS)

    Lü, Yuan-Jie; Lin, Zhao-Jun; Zhang, Yu; Meng, Ling-Guo; Cao, Zhi-Fang; Luan, Chong-Biao; Chen, Hong; Wang, Zhan-Guo

    2011-09-01

    Ni Schottky contacts on AlGaN/GaN heterostructures were fabricated. Some samples were thermally treated in a furnace with N2 ambience at 600 °C for different times (0.5 h, 4.5 h, 10.5 h, 18 h, 33 h, 48 h, and 72 h), the others were thermally treated for 0.5 h at different temperatures (500 °C, 600 °C, 700 °C, and 800 °C). With the measured current—voltage (I—V) and capacitance—voltage (C—V) curves and by self-consistently solving Schrodinger's and Poisson's equations, we found that the relative permittivity of the AlGaN barrier layer was related to the piezoelectric and the spontaneous polarization of the AlGaN barrier layer. The relative permittivity was in proportion to the strain of the AlGaN barrier layer. The relative permittivity and the strain reduced with the increased thermal stress time until the AlGaN barrier totally relaxed (after 18 h at 600 °C in the current study), and then the relative permittivity was almost a constant with the increased thermal stress time. When the sample was treated at 800 °C for 0.5 h, the relative permittivity was less than the constant due to the huge diffusion of the contact metal atoms. Considering the relation between the relative permittivity of the AlGaN barrier layer and the converse piezoelectric effect, the conclusion can be made that a moderate thermal stress can restrain the converse piezoelectric effect and can improve the stability of AlGaN/GaN heterostructure devices.

  11. High power master oscillator power amplifier (MOPA) AlGaAs laser for intersatellite communications

    NASA Technical Reports Server (NTRS)

    Cornwell, Donald M., Jr.

    1992-01-01

    A master oscillator power amplifier (MOPA) configuration has been developed using an anti-reflection-coated AlGaAs semiconductor broad area laser in a reflective amplifier mode. For CW injection, the MOPA produced 340 mW of diffraction-limited power. The semiconductor MOPA configuration also produced peak diffraction-limited powers of 360 mW and 320 mW for quaternary pulse position Q-PPM modulation rates of 50 Mbps and 325 Mbps, respectively, for a peak injected power of 100 mW. Angular beamsteering during modulation was minimized by collimating the injected beam. The diffraction-limited peak power was limited by the frequency chirp of the master oscillator and also by the coupling losses of the injected beam.

  12. AlGaAs growth by OMCVD using an excimer laser

    NASA Technical Reports Server (NTRS)

    Warner, Joseph D.; Wilt, David M.; Pouch, John J.; Aron, Paul R.

    1986-01-01

    AlGaAs has been grown on GaAs by laser assisted OMCVD using an excimer laser, wavelength 193 nm, and a Cambridge OMCVD reactor. Films were grown at temperatures of 450 and 500 C with the laser beam parallel to the surface and impinging onto the surface at 15 deg from parallel. The samples were heated by RF coils while the laser beam was perpendicular to the gas flow. Typical gas flow parameters are 12 slm of H2, 15 sccm of Ga(CH3)3, 13 sccm of Al(CH3)3, and a pressure of 250 mbar. The initial energy density of the beam at the surface was 40 mJ/sq cm, the pulse rate was 20 pps, and the growth time was 7 min. The films were analyzed by Auger electron spectroscopy for the aluminum concentration and by TEM for the surface morphology.

  13. Influences of thicknesses and structures of barrier cap layers on As ion profiles and implant damages in HgCdTe epilayers

    NASA Astrophysics Data System (ADS)

    Shi, Changzhi; Lin, Chun; Wei, Yanfeng; Chen, Lu; Ye, Zhenhua

    2016-05-01

    The barrier cap layer (BCL) is considered to be able to absorb partially implant induced damages during ion implantation, thus its structure and property could impact the result of ion implantation. In this paper, for As ion implantation in HgCdTe, the different BCLs were deposited on the CdZnTe-based (LPE) and GaAs-based (MBE) HgCdTe epilayers, respectively. Then, the influences of thicknesses and structures of these BCLs on dopant profiles and implant damages were investigated. The as-grown BCLs include thermally evaporated (TE) ZnS, TE CdTe, electron beam evaporated (EBE) CdTe and in-situ CdTe/ZnTe grown by MBE. The SIMS profiles and TEM characterization indicate: For TE ZnS BCLs, there exists an optimized thickness to obtain the deepest As indiffusion after high temperature annealing, and the end-of-range (EOR) depth is linearly proportional to the thickness ratio of a-MCT layer/damage layer. For TE CdTe BCLs, the barrier layer induced channeling effect (BLICE) occurs to the thin BCL samples, while this effect is suppressed in the thick BCL samples. The phenomenon might be due to that the blocking effect of the layered structure inside each crystal column becomes dominate in the thick BCL samples. Additionally, the EBE CdTe BCL with layered structure can suppress effectively the BLICE effect; in the in-situ CdTe/ZnTe BCL, the short defect layer generated in the CdTe buffer layer and the amorphization of the ZnTe layer during ion implantation also play a significant role in suppressing the BLICE effect.

  14. The consequences of air flow on the distribution of aqueous species during dielectric barrier discharge treatment of thin water layers

    NASA Astrophysics Data System (ADS)

    Tian, Wei; Lietz, Amanda M.; Kushner, Mark J.

    2016-10-01

    The desired outcomes of wet tissue treatment by dielectric barrier discharges (DBDs) strongly depend on the integrated fluences of reactive species incident onto the tissue, which are determined by power, frequency and treatment time. The reactivity produced by such plasmas is often expected to be proportional to treatment time due to the accumulation of radicals in the liquid over the tissue. However, one of the typically uncontrolled parameters in DBD treatment of liquids and tissue is gas flow, which could affect the delivery of plasma produced radicals to the tissue. Gas flow can redistribute long-lived, plasma produced gas phase species prior to solvating in the liquid, while not greatly affecting the solvation of short-lived species. Gas flow can therefore potentially be a control mechanism for tailoring the fluences of reactive species to the tissue. In this paper, we report on a computational investigation of the consequences of gas flow on treatment of liquid layers covering tissue by atmospheric DBDs by up to 100 pulses. We found that gas flow (through residence time of the gas) can control the production of gas phase species requiring many collisions to form, such as reactive nitrogen species (RNS). The resulting solvation of the RNS in turn controls the production of aqueous species such as \\text{NO}\\text{3aq}- and \\text{ONOO}\\text{aq}- (aq denotes an aqueous species). With the exception of O3 and O3aq, reactive oxygen species (ROS) are less sensitive to gas flow, and so OHaq and H2O2aq, are determined primarily by discharge properties.

  15. Seasonal-to-interannual variability of the barrier layer in the western Pacific warm pool associated with ENSO

    NASA Astrophysics Data System (ADS)

    Wang, Xidong; Liu, Hailong

    2016-07-01

    This study investigates the seasonal-to-interannual variability of the barrier layer (BL) associated with El Niño/Southern Oscillation (ENSO) using in situ temperature-salinity observations and simple ocean assimilation data (SODA). The comparisons with the BL derived from the in situ observations show that SODA successfully captures the variability of the BL in the Pacific warm pool. On seasonal timescale, based on the empirical orthogonal function (EOF) analysis, we identify that three seasonal leading modes of the BL along the equatorial Pacific are closely associated with the transition, resurgence and onset of ENSO, respectively. We also confirm that two interannual leading modes of the BL are related to different flavors of ENSO events. EOF1 mainly embodies a combined response to the central and east Pacific ENSO events while EOF2 is related to the central Pacific ENSO events. We especially focus on the contrast of the BL between east Pacific El Niño (EPEN) and central Pacific El Niño (CPEN). During EPEN, the abnormally thick BL appears in the east of the dateline. It follows the sea surface salinity front to shift zonally with the evolution of EPEN event, and propagates toward the central Pacific. It can be attributed to horizontal ocean advection, heavy precipitation and the downwelling Kelvin waves. In contrast, during CPEN, the abnormally thick BL is confined to the region between 160°E and 180°E around the SSS front without significant west-east displacement. It is mainly dominated by the local processes including Ekman pumping, precipitation, and zonal ocean advection. Different from the BL in the EPEN events, it has no evident basin-scale propagating signal.

  16. Gas-Barrier Hybrid Coatings by the Assembly of Novel Poly(vinyl alcohol) and Reduced Graphene Oxide Layers through Cross-Linking with Zirconium Adducts.

    PubMed

    Yan, Ning; Capezzuto, Filomena; Buonocore, Giovanna G; Lavorgna, Marino; Xia, Hesheng; Ambrosio, Luigi

    2015-10-14

    Gas-barrier materials obtained by coating poly(ethylene terephthalate) (PET) substrates have already been studied in the recent literature. However, because of the benefits of using cheaper, biodegradable, and nonpolar polymers, multilayered hybrid coatings consisting of alternate layers of reduced graphene oxide (rGO) nanosheets and a novel high amorphous vinyl alcohol (HAVOH) with zirconium (Zr) adducts as binders were successfully fabricated through a layer-by-layer (LbL) assembly approach. Atomic force microscopy analysis showed that rGO nanoplatelets were uniformly dispersed over the HAVOH polymer substrate. Scanning and transmission electron microscopies revealed that multilayer (HAVOH/Zr/rGO)n hybrid coatings exhibited a brick-wall structure with HAVOH and rGO as buildings blocks. It has been shown that 40 layers of HAVOH/Zr/rGO ultrathin films deposited on PET substrates lead to a decrease of 1 order of magnitude of oxygen permeability with respect to the pristine PET substrate. This is attributed to the effect of zirconium polymeric adducts, which enhance the assembling efficiency of rGO and compact the layers, as confirmed by NMR characterization, resulting in a significant increment of the oxygen-transport pathways. Because of their high barrier properties and high flexibility, these films are promising candidates in a variety of applications such as packaging, selective gas films, and protection of flexible electronics.

  17. AlGaAs top solar cell for mechanical attachment in a multi-junction tandem concentrator solar cell stack

    NASA Technical Reports Server (NTRS)

    Dinetta, L. C.; Hannon, M. H.; Mcneely, J. B.; Barnett, A. M.

    1991-01-01

    The AstroPower self-supporting, transparent AlGaAs top solar cell can be stacked upon any well-developed bottom solar cell for improved system performance. This is an approach to improve the performance and scale of space photovoltaic power systems. Mechanically stacked tandem solar cell concentrator systems based on the AlGaAs top concentrator solar cell can provide near term efficiencies of 36 percent (AMO, 100x). Possible tandem stack efficiencies greater than 38 percent (100x, AMO) are feasible with a careful selection of materials. In a three solar cell stack, system efficiencies exceed 41 percent (100x, AMO). These device results demonstrate a practical solution for a state-of-the-art top solar cell for attachment to an existing, well-developed solar cell.

  18. Penetration resistant barrier

    DOEpatents

    Hoover, William R.; Mead, Keith E.; Street, Henry K.

    1977-01-01

    The disclosure relates to a barrier for resisting penetration by such as hand tools and oxy-acetylene cutting torches. The barrier comprises a layer of firebrick, which is preferably epoxy impregnated sandwiched between inner and outer layers of steel. Between the firebrick and steel are layers of resilient rubber-like filler.

  19. Puncture detecting barrier materials

    DOEpatents

    Hermes, R.E.; Ramsey, D.R.; Stampfer, J.F.; Macdonald, J.M.

    1998-03-31

    A method and apparatus for continuous real-time monitoring of the integrity of protective barrier materials, particularly protective barriers against toxic, radioactive and biologically hazardous materials has been developed. Conductivity, resistivity or capacitance between conductive layers in the multilayer protective materials is measured by using leads connected to electrically conductive layers in the protective barrier material. The measured conductivity, resistivity or capacitance significantly changes upon a physical breach of the protective barrier material. 4 figs.

  20. Puncture detecting barrier materials

    DOEpatents

    Hermes, Robert E.; Ramsey, David R.; Stampfer, Joseph F.; Macdonald, John M.

    1998-01-01

    A method and apparatus for continuous real-time monitoring of the integrity of protective barrier materials, particularly protective barriers against toxic, radioactive and biologically hazardous materials has been developed. Conductivity, resistivity or capacitance between conductive layers in the multilayer protective materials is measured by using leads connected to electrically conductive layers in the protective barrier material. The measured conductivity, resistivity or capacitance significantly changes upon a physical breach of the protective barrier material.

  1. Combined effect of capillary barrier and layered slope on water, solute and nanoparticle transfer in an unsaturated soil at lysimeter scale.

    PubMed

    Prédélus, Dieuseul; Coutinho, Artur Paiva; Lassabatere, Laurent; Bien, Le Binh; Winiarski, Thierry; Angulo-Jaramillo, Rafael

    2015-10-01

    It is well recognized that colloidal nanoparticles are highly mobile in soils and can facilitate the transport of contaminants through the vadose zone. This work presents the combined effect of the capillary barrier and soil layer slope on the transport of water, bromide and nanoparticles through an unsaturated soil. Experiments were performed in a lysimeter (1×1×1.6m(3)) called LUGH (Lysimeter for Urban Groundwater Hydrology). The LUGH has 15 outputs that identify the temporal and spatial evolution of water flow, solute flux and nanoparticles in relation to the soil surface conditions and the 3D system configuration. Two different soil structures were set up in the lysimeter. The first structure comprises a layer of sand (0-0.2cm, in diameter) 35cm thick placed horizontally above a layer of bimodal mixture also 35cm thick to create a capillary barrier at the interface between the sand and bimodal material. The bimodal material is composed of a mixture 50% by weight of sand and gravel (0.4-1.1cm, in diameter). The second structure, using the same amount of sand and bimodal mixture as the first structure represents an interface with a 25% slope. A 3D numerical model based on Richards equation for flow and the convection dispersion equations coupled with a mechanical module for nanoparticle trapping was developed. The results showed that under the effect of the capillary barrier, water accumulated at the interface of the two materials. The sloped structure deflects flow in contrast to the structure with zero slope. Approximately 80% of nanoparticles are retained in the lysimeter, with a greater retention at the interface of two materials. Finally, the model makes a good reproduction of physical mechanisms observed and appears to be a useful tool for identifying key processes leading to a better understanding of the effect of capillary barrier on nanoparticle transfer in an unsaturated heterogeneous soil.

  2. Radiolysis products and sensory properties of electron-beam-irradiated high-barrier food-packaging films containing a buried layer of recycled low-density polyethylene.

    PubMed

    Chytiri, S D; Badeka, A V; Riganakos, K A; Kontominas, M G

    2010-04-01

    The aim was to study the effect of electron-beam irradiation on the production of radiolysis products and sensory changes in experimental high-barrier packaging films composed of polyamide (PA), ethylene-vinyl alcohol (EVOH) and low-density polyethylene (LDPE). Films contained a middle buried layer of recycled LDPE, while films containing 100% virgin LDPE as the middle buried layer were taken as controls. Irradiation doses ranged between zero and 60 kGy. Generally, a large number of radiolysis products were produced during electron-beam irradiation, even at the lower absorbed doses of 5 and 10 kGy (approved doses for food 'cold pasteurization'). The quantity of radiolysis products increased with irradiation dose. There were no significant differences in radiolysis products identified between samples containing a recycled layer of LDPE and those containing virgin LDPE (all absorbed doses), indicating the 'functional barrier' properties of external virgin polymer layers. Sensory properties (mainly taste) of potable water were affected after contact with irradiated as low as 5 kGy packaging films. This effect increased with increasing irradiation dose.

  3. A tantalum diffusion barrier layer for improving the output performance of AlGaInP-based light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Kim, Dae-Hyun; Park, Jae-Seong; Kang, Daesung; Seong, Tae-Yeon

    2016-03-01

    We have investigated the effect of a Ta diffusion barrier layer on the electrical characteristics of AuBe/Au contacts on a p-GaP window layer for AlGaInP-based light-emitting diodes (LEDs). It was shown that after annealing at 500 °C, the AuBe/Ta/Au contacts exhibited nearly 2 orders of magnitude lower specific contact resistance (2.8 × 10-6 Ω·cm2) than the AuBe/Au contacts (1.0 × 10-4 Ω·cm2). The LEDs with and without the Ta diffusion barrier layer showed an external quantum efficiency of 14.03 and 13.5% at 50 mA, respectively. After annealing at 500 °C, the AuBe/Ta/Au contacts showed a higher reflectance (92.8% at 617 nm) than that of the AuBe/Au contacts (87.7%). X-ray photoemission spectroscopy (XPS) results showed that the Ga 2p core level for the annealed AuBe/Au samples shifted to higher binding energies, while this level shifted towards lower binding energies for the AuBe/Ta/Au samples. Depth profiles using Auger electron spectroscopy (AES) showed that annealing of the AuBe/Au samples caused the outdiffusion of both Be and P atoms into the metal contact, while for the AuBe/Ta/Au samples, the outdiffusion of Be atoms was blocked by the Ta barrier layer and more Be atoms were indiffused into GaP. The annealing-induced electrical degradation and ohmic contact formation are described and discussed based on the XPS and electrical results.

  4. Multi-scale analysis of the diffusion barrier layer of gadolinia-doped ceria in a solid oxide fuel cell operated in a stack for 3000 h

    NASA Astrophysics Data System (ADS)

    Morales, M.; Miguel-Pérez, V.; Tarancón, A.; Slodczyk, A.; Torrell, M.; Ballesteros, B.; Ouweltjes, J. P.; Bassat, J. M.; Montinaro, D.; Morata, A.

    2017-03-01

    The state-of-the-art materials for SOFCs are yttria-stabilized zirconia as electrolyte and lanthanum strontium cobalt ferrite as cathode. However, the formation of insulating phases between them requires the use of diffusion barriers, typically made of gadolinia doped ceria. The study of the stability of this layer during the fabrication and in operando is currently one of the major goals of the SOFC industry. In this work, the cation inter-diffusion at the cathode/barrier layer/electrolyte region is analysed for an anode-supported cell industrially fabricated by conventional techniques, assembled in a short-stack and tested under real operation conditions for 3000 h. A comprehensive study of this cell, and an equivalent non-operated one, is performed in order to understand the inter-diffusion mechanisms with possible effects on the final performance. The analyses evidence that the cation diffusion is occurring during the fabrication process. Despite the significant diffusion of Ce,Gd, Zr, Y and Sr cations, the formation of typically reported CGO-YSZ solid solution is not observed while the presence of isolated grains of SrZrO3 is proved. All in all, this study presents new insights into the stability of the typically employed diffusion barriers for solid oxide cells that will guide future strategies to improve their performance and durability.

  5. Vacuum barrier for excimer lasers

    DOEpatents

    Shurter, Roger P.

    1992-01-01

    A barrier for separating the vacuum area of a diode from the pressurized gas area of an excimer laser. The barrier is a composite material comprising layers of a metal such as copper, along with layers of polyimide, and a matrix of graphite fiber yarns impregnated with epoxy. The barrier is stronger than conventional foil barriers, and allows greater electron throughput.

  6. Vacuum barrier for excimer lasers

    DOEpatents

    Shurter, R.P.

    1992-09-15

    A barrier for separating the vacuum area of a diode from the pressurized gas area of an excimer laser. The barrier is a composite material comprising layers of a metal such as copper, along with layers of polyimide, and a matrix of graphite fiber yarns impregnated with epoxy. The barrier is stronger than conventional foil barriers, and allows greater electron throughput. 3 figs.

  7. Multilayer thermal barrier coating systems

    DOEpatents

    Vance, Steven J.; Goedjen, John G.; Sabol, Stephen M.; Sloan, Kelly M.

    2000-01-01

    The present invention generally describes multilayer thermal barrier coating systems and methods of making the multilayer thermal barrier coating systems. The thermal barrier coating systems comprise a first ceramic layer, a second ceramic layer, a thermally grown oxide layer, a metallic bond coating layer and a substrate. The thermal barrier coating systems have improved high temperature thermal and chemical stability for use in gas turbine applications.

  8. High-voltage 4H-SiC trench MOS barrier Schottky rectifier with low forward voltage drop using enhanced sidewall layer

    NASA Astrophysics Data System (ADS)

    Cho, Doohyung; Sim, Seulgi; Park, Kunsik; Won, Jongil; Kim, Sanggi; Kim, Kwangsoo

    2015-12-01

    In this paper, a 4H-SiC trench MOS barrier Schottky (TMBS) rectifier with an enhanced sidewall layer (ESL) is proposed. The proposed structure has a high doping concentration at the trench sidewall. This high doping concentration improves both the reverse blocking and forward characteristics of the structure. The ESL-TMBS rectifier has a 7.4% lower forward voltage drop and a 24% higher breakdown voltage. However, this structure has a reverse leakage current that is approximately three times higher than that of a conventional TMBS rectifier owing to the reduction in energy barrier height. This problem is solved when ESL is used partially, since its use provides a reverse leakage current that is comparable to that of a conventional TMBS rectifier. Thus, the forward voltage drop and breakdown voltage improve without any loss in static and dynamic characteristics in the ESL-TMBS rectifier compared with the performance of a conventional TMBS rectifier.

  9. Microstructure/electrical Property Correlations for Yttrium BARIUM(2) COPPER(3) OXYGEN(7-X)/BARRIER Layer Films Deposited on Aluminum Oxide, Silicon, and Yttria - Zirconia Substrates

    NASA Astrophysics Data System (ADS)

    Mueller, Carl Henry

    YBa_2Cu_3O_ {7-x} and barrier layer films were deposited on single-crystal silicon (Si), Al_2O _3, yittria-stabilized zirconia (Y-ZrO _2), SrTiO_3, and LaAlO_3 substrates. A pulsed laser deposition process was used to deposit the films at a substrate temperature of 730-750^circC, and the films were cooled in an oxygen ambient. The films were characterized using resistance versus temperature, critical current density (J_{c}), x-ray diffraction (XRD), scanning electron microscopy (SEM), Auger electron spectroscopy (AES), and Raman spectroscopy. Growth of barrier layers on Si and Al_2O_3 substrates prior to the superconductor suppressed chemical interdiffusion between the superconductor and substrate. For (1102) Al_2O _3, the best barrier layer was a SrTiO _3 film deposited at 200 mTorr of oxygen. The YBa_2Cu_3O_{7 -x} film had a zero resistance temperature of 83^circK, and the J _{c} was 2.5 times 10^6 amps/cm ^2 at 4.5^circ K. The surface resistance was 10^ {-2} ohms at 36 gigahertz. On silicon substrates, YBa_2Cu _3O_{7-x} degradation is aggrevated by thermal stresses created by the difference in thermal expansion coefficients between YBa_2Cu_3O_{7-x} and Si (13.2 versus 3.8 times 10 ^{-6}/^ circC, respectively), which causes microcracking in the YBa_2Cu_3O_ {7-x} films. Cracking and interdiffusion were minimized by depositing a YAlO_3 barrier layer prior to YBa_2Cu _3O_{7-x}. The thermal stresses were relieved by viscoelastic relaxation in the YBa_2Cu_3O_{7-x} film, and the T_0 was 78 ^circK. The J_{c} values of YBa_2Cu_3O_ {7-x} films on Y-ZrO_2 substrates were increased by depositing Y-ZrO _2 or Y_2O_3 barrier layers. YBa_2Cu _3O_{7-x}/Y_2O_3 films on Y-ZrO_2 substrates had J_{c} values of 9 times 10^5 and 1 times 10^7 amps/cm^2 at 77 and 4.5 ^circK. The J_{ c} of YBa_2Cu _3O_{7-x} films deposited on a Y-ZrO_2 substrate without a barrier layer was 6.8 times 10 ^3 amps/cm^2 at 4.5 ^circK. The higher J _{c} values were attributed to pinning of the magnetic flux by

  10. Impact of InGaN back barrier layer on performance of AIInN/AlN/GaN MOS-HEMTs

    NASA Astrophysics Data System (ADS)

    Swain, Sanjit Kumar; Adak, Sarosij; Pati, Sudhansu Kumar; Sarkar, Chandan Kumar

    2016-09-01

    In the present work, we have discussed the effect of InGaN back barrier on device performances of 100 nm gate length AlInN/AlN/GaN metal oxide semiconductor high electron mobility transistor (MOS-HEMT) device and a wide comparison is made with respect to without considering the back barrier layer. The InGaN layer is introduced in the intension to raise the conduction band of GaN buffer with respect to GaN channel so that there is an improvement in the carrier confinement and at the same time witnessed excellent high frequency performance. The simulations are carried out using 2D Sentaurus TCAD simulator using Hydrodynamic mobility model by taking interface traps into consideration. Due to high value of two-dimensional electron gas (2DEG) density and mobility in AlInN/AlN/GaN MOS-HEMT device, higher drain current density is achieved. Simulation are carried out for different device parameters such as transfer characteristic (Id-Vg), transconductance factor (gm), drain induced barrier lowering (DIBL), Subthreshold slope (SS), conduction band energy, transconductance generation factor (gm/Id) and electric field. We have also examined the RF performance such as, total gate capacitance (Cgg), current gain cutoff frequency (fT) and power gain cutoff frequency (fmax) of the proposed devices. Use of InGaN back barrier tends to increase threshold voltage towards more positive value, reduced DIBL, and improves SS and significant growth in (gm/Id) by 5.5%. It also helps to achieve better frequency response like substantial increase in fT up to 91 GHz with current gain 60 dB as compare to 67 GHz with 56 dB for the device without considering back barrier and increase in fmax up to 112 GHz with respect 94 GHz. These results evident that use of InGaN back barrier in such devices can be better solution for future analog and RF applications.

  11. Multi-user quantum key distribution with entangled photons from an AlGaAs chip

    NASA Astrophysics Data System (ADS)

    Autebert, C.; Trapateau, J.; Orieux, A.; Lemaître, A.; Gomez-Carbonell, C.; Diamanti, E.; Zaquine, I.; Ducci, S.

    2016-12-01

    In view of real-world applications of quantum information technologies, the combination of miniature quantum resources with existing fibre networks is a crucial issue. Among such resources, on-chip entangled photon sources play a central role for applications spanning quantum communications, computing and metrology. Here, we use a semiconductor source of entangled photons operating at room temperature in conjunction with standard telecom components to demonstrate multi-user quantum key distribution, a core protocol for securing communications in quantum networks. The source consists of an AlGaAs chip-emitting polarisation entangled photon pairs over a large bandwidth in the main telecom band around 1550 nm without the use of any off-chip compensation or interferometric scheme; the photon pairs are directly launched into a dense wavelength division multiplexer (DWDM) and secret keys are distributed between several pairs of users communicating through different channels. We achieve a visibility measured after the DWDM of 87% and show long-distance key distribution using a 50-km standard telecom fibre link between two network users. These results illustrate a promising route to practical, resource-efficient implementations adapted to quantum network infrastructures.

  12. Quasiperiodic AlGaAs superlattices for neuromorphic networks and nonlinear control systems

    SciTech Connect

    Malyshev, K. V.

    2015-01-28

    The application of quasiperiodic AlGaAs superlattices as a nonlinear element of the FitzHugh–Nagumo neuromorphic network is proposed and theoretically investigated on the example of Fibonacci and figurate superlattices. The sequences of symbols for the figurate superlattices were produced by decomposition of the Fibonacci superlattices' symbolic sequences. A length of each segment of the decomposition was equal to the corresponding figurate number. It is shown that a nonlinear network based upon Fibonacci and figurate superlattices provides better parallel filtration of a half-tone picture; then, a network based upon traditional diodes which have cubic voltage-current characteristics. It was found that the figurate superlattice F{sup 0}{sub 11}(1) as a nonlinear network's element provides the filtration error almost twice less than the conventional “cubic” diode. These advantages are explained by a wavelike shape of the decreasing part of the quasiperiodic superlattice's voltage-current characteristic, which leads to multistability of the network's cell. This multistability promises new interesting nonlinear dynamical phenomena. A variety of wavy forms of voltage-current characteristics opens up new interesting possibilities for quasiperiodic superlattices and especially for figurate superlattices in many areas—from nervous system modeling to nonlinear control systems development.

  13. Quasiperiodic AlGaAs superlattices for neuromorphic networks and nonlinear control systems

    NASA Astrophysics Data System (ADS)

    Malyshev, K. V.

    2015-01-01

    The application of quasiperiodic AlGaAs superlattices as a nonlinear element of the FitzHugh-Nagumo neuromorphic network is proposed and theoretically investigated on the example of Fibonacci and figurate superlattices. The sequences of symbols for the figurate superlattices were produced by decomposition of the Fibonacci superlattices' symbolic sequences. A length of each segment of the decomposition was equal to the corresponding figurate number. It is shown that a nonlinear network based upon Fibonacci and figurate superlattices provides better parallel filtration of a half-tone picture; then, a network based upon traditional diodes which have cubic voltage-current characteristics. It was found that the figurate superlattice F011(1) as a nonlinear network's element provides the filtration error almost twice less than the conventional "cubic" diode. These advantages are explained by a wavelike shape of the decreasing part of the quasiperiodic superlattice's voltage-current characteristic, which leads to multistability of the network's cell. This multistability promises new interesting nonlinear dynamical phenomena. A variety of wavy forms of voltage-current characteristics opens up new interesting possibilities for quasiperiodic superlattices and especially for figurate superlattices in many areas—from nervous system modeling to nonlinear control systems development.

  14. Interactions of Cu with CoSi2, CrSi2 and TiSi2 with and without TiNx barrier layers

    NASA Astrophysics Data System (ADS)

    Olowolafe, J. O.; Li, Jian; Mayer, J. W.

    1990-12-01

    Interactions of Cu with CoSi2, CrSi2, and TiSi2 with and without interposed TiNx layers have been studied using Rutherford backscattering spectrometry, Auger electron spectrometry, x-ray diffraction, and in situ sheet resistivity measurements. Cu diffuses through a preformed CoSi2 layer to form the structure CoSi2/Cu3Si/Si(100). No dissociation of CoSi2 has been observed. For the Cu/CrSi2/Si system, the outdiffusion of Si leads to the formation of Cu3Si/CrSi2/Si at temperatures above 300 °C. At about the same temperature, Cu diffuses into a TiSi2 layer and to the TiSi2/Si interface to react with both Ti and Si forming Cu3Ti, Cu3Si, and Cu4Si phases. A 50-nm TiNx layer prepared by reactive sputtering was observed to be an effective diffusion barrier between Cu and CoSi2 or CrSi2. A 30-nm layer of TiNx simultaneously grown with TiSi2 by rapid thermal annealing proved effective between Cu and TiSi2 up to 500 °C.

  15. Tailoring morphology in free-standing anodic aluminium oxide: control of barrier layer opening down to the sub-10 nm diameter.

    PubMed

    Gong, Jie; Butler, William H; Zangari, Giovanni

    2010-05-01

    Free-standing, highly ordered porous aluminium oxide templates were fabricated by three-step anodization in oxalic, sulfuric or phosphoric acid solutions, followed by dissolution of the aluminium substrate in HgCl(2). Opening of the pore bottoms on the barrier layer side of these templates was carried out by using chemical or ion beam etching. Chemical etching is capable of achieving full pore opening, but partial pore opening occurs inhomogeneously. On the contrary, ion beam etching enables homogeneous and reproducible partial pore opening, with the pore size controlled through the etching time. By this method, pore openings as small as 5 nm can reliably be obtained.

  16. Improved characteristics of ultraviolet AlGaN multiple-quantum-well laser diodes with step-graded quantum barriers close to waveguide layers

    NASA Astrophysics Data System (ADS)

    Cai, Xuefen; Li, Shuping; Kang, Junyong

    2016-09-01

    Ultraviolet AlGaN multiple-quantum-well laser diodes (LDs) with step-graded quantum barriers (QBs) instead of conventional first and last QBs close to waveguide layers are proposed. The characteristics of this type of laser diodes are numerically investigated by using the software PICS3D and it is found that the performances of these LDs are greatly improved. The results indicates that the structure with step-graded QBs exhibits higher output light power, slope efficiency and emission intensity, as well as lower series resistance and threshold current density under the identical condition, compared with conventional LD structure.

  17. Observations of Surface Energy Fluxes and Boundary-Layer Structure Over Heron Reef, Great Barrier Reef, Australia

    NASA Astrophysics Data System (ADS)

    MacKellar, Mellissa C.; McGowan, Hamish A.; Phinn, Stuart R.; Soderholm, Joshua S.

    2013-02-01

    Over warm, shallow coral reefs the surface radiation and energy fluxes differ from those of the open ocean and result in modification to the marine atmospheric boundary layer via the development of convective internal boundary layers. The complex interrelationships between the surface energy balance and boundary-layer characteristics influence local weather (wind, temperature, humidity) and hydrodynamics (water temperature and currents), as well as larger scale processes, including cloud field properties and precipitation. The nature of these inter-relationships has not been accurately described for coral reef environments. This study presents the first measurements of the surface energy balance, radiation budget and boundary layer thermodynamics made over a coral reef using an eddy-covariance system and radiosonde aerological profiling of the lower atmosphere. Results show that changes in surface properties and the associated energetics across the ocean-reef boundary resulted in modification to the marine atmospheric boundary layer during the Austral winter and summer. Internal convective boundary layers developed within the marine atmospheric boundary layer over the reef and were found to be deeper in the summer, yet more unstable during the winter when cold and drier flow from the mainland enhances heat and moisture fluxes to the atmosphere. A mixed layer was identified in the marine atmospheric boundary layer varying from 375 to 1,200 m above the surface, and was deeper during the summer, particularly under stable anticyclonic conditions. Significant cloud cover and at times rain resulted in the development of a stable stratified atmosphere over the reef. Our findings show that, for Heron Reef, a lagoonal platform reef, there was a horizontal discontinuity in surface energy fluxes across the ocean-reef boundary, which modified the marine atmospheric boundary layer.

  18. Adhesive flexible barrier film, method of forming same, and organic electronic device including same

    DOEpatents

    Blizzard, John Donald; Weidner, William Kenneth

    2013-02-05

    An adhesive flexible barrier film comprises a substrate and a barrier layer disposed on the substrate. The barrier layer is formed from a barrier composition comprising an organosilicon compound. The adhesive flexible barrier film also comprises an adhesive layer disposed on the barrier layer and formed from an adhesive composition. A method of forming the adhesive flexible barrier film comprises the steps of disposing the barrier composition on the substrate to form the barrier layer, disposing the adhesive composition on the barrier layer to form the adhesive layer, and curing the barrier layer and the adhesive layer. The adhesive flexible barrier film may be utilized in organic electronic devices.

  19. Efficient gas barrier properties of multi-layer films based on poly(lactic acid) and fish gelatin.

    PubMed

    Hosseini, Seyed Fakhreddin; Javidi, Zahra; Rezaei, Masoud

    2016-11-01

    Multi-layer film structures of poly(lactic acid) (PLA) and fish gelatin (FG), prepared using the solvent casting technique, were studied in an effort to produce bio-based films with low oxygen (OP) and water vapor permeability (WVP). The scanning electron microscopy (SEM) images of triple-layer film showed that the outer PLA layers are being closely attached to the inner FG layer to make continuous film. The OP of multi-layer film (5.02cm(3)/m(2)daybar) decreased more than 8-fold compared with that of the PLA film, and the WVP of multi-layer film (0.125gmm/kPah m(2)) also decreased 11-fold compared with that of the FG film. Lamination with PLA profoundly increased the water resistance of the bare gelatin film. Meanwhile, the tensile strength of the triple-layer film (25±2.13MPa) was greater than that of FG film (7.48±1.70MPa). At the same time, the resulting film maintains high optical clarity. Differential scanning calorimetry (DSC) analysis also revealed that the materials were compatible showing only one Tg which decreased with FG deposition. This material exhibits an environmental-friendliness potential and a high versatility in food packaging.

  20. SiOx layer as functional barrier in polyethylene terephthalate (PET) bottles against potential contaminants from post-consumer recycled PET.

    PubMed

    Welle, Frank; Franz, Roland

    2008-06-01

    The barrier effect of a silicon oxide (SiOx) coating on the inner surface of PET bottles, in terms of the ability to reduce the migration of post-consumer compounds from the PET bottle wall into food simulants (3% acetic acid and 10% ethanol), was investigated. The barrier effect was examined by artificially introducing model substances (surrogates) into the PET bottle wall to represent a worst-case scenario. Test bottles with three different spiking levels up to approximately 1000 mg kg(-1) per surrogate were blown and coated on the inner surface. The SiOx-coated bottles and the non-coated reference bottles were filled with food simulants. From the specific migration of the surrogates with different bottles wall concentrations, the maximum surrogate concentrations in the bottle wall corresponding to migration of 10 microg l(-1) were determined. It was shown that the SiOx coating layer is an efficient barrier to post-consumer compounds. The maximum bottle wall concentrations of the surrogates corresponding to migration of 10 microg l(-1) were in the range of 200 mg kg(-1) for toluene and approximately 900 mg kg(-1) for benzophenone. Consequently, the SiOx coating allows use of conventionally recycled post-consumer PET flakes (without a super-clean recycling process) for packaging aqueous and low alcoholic foodstuffs (under cold-fill conditions) and protects food from migration of unwanted contaminants from post-consumer PET.

  1. Numerical Simulation and Analytical Modeling of InAs nB n Infrared Detectors with n-Type Barrier Layers

    NASA Astrophysics Data System (ADS)

    Reine, Marion; Pinkie, Benjamin; Schuster, Jonathan; Bellotti, Enrico

    2014-08-01

    This paper presents one-dimensional numerical simulations and analytical modeling of InAs nB n detectors having n-type barrier layers (BLs) with donor concentrations ranging from 1.8 × 1015 cm-3 to 2.5 × 1016 cm-3. We consider only "ideal" defect-free nB n detectors, in which dark current is due only to the fundamental mechanisms of Auger-1 and radiative recombination. We employ a simplified nB n geometry, with the absorber layer (AL) and contact layer (CL) having the same donor concentration and comparable thicknesses, to reveal more clearly the underlying device physics and operation of this novel infrared detector. We examine quantitatively the three space-charge regions in the nB n detector with an n-type BL, and determine a criterion for combinations of bias voltage and BL donor concentration that allow operation of the nB n with no depletion region in the narrow-gap AL or CL. We determine the quantitative characteristics of the valence band (VB) barrier that is present for an n-type BL but not for a p-type BL. Solving Poisson's equation in the uniformly doped BL yields analytical expressions for the VB barrier height versus bias voltage, and an approximate expression for the crossover voltage for the onset of a depletion region in the AL. Our simulations lead to a new model for the ideal nB n with an n-type BL that consists of two ideal back-to-back photodiodes connected by a voltage-dependent series resistance representing the BL. Increasing the BL donor concentration lowers exponentially the mobile hole concentration in the BL, thereby exponentially increasing the BL series resistance. Reductions in dark current and photocurrent due to the valence barrier in the n-type BL only become appreciable when the BL series resistance becomes comparable to or exceeds the diffusion current resistances of the AL and CL.

  2. Influence of PEDOT:PSS on the effectiveness of barrier layers prepared by atomic layer deposition in organic light emitting diodes

    SciTech Connect

    Wegler, Barbara; Schmidt, Oliver; Hensel, Bernhard

    2015-01-15

    Organic light emitting diodes (OLEDs) are well suited for energy saving lighting applications, especially when thinking about highly flexible and large area devices. In order to avoid the degradation of the organic components by water and oxygen, OLEDs need to be encapsulated, e.g., by a thin sheet of glass. As the device is then no longer flexible, alternative coatings are required. Atomic layer deposition (ALD) is a very promising approach in this respect. The authors studied OLEDs that were encapsulated by 100 nm Al{sub 2}O{sub 3} deposited by ALD. The authors show that this coating effectively protects the active surface area of the OLEDs from humidity. However, secondary degradation processes still occur at sharp edges of the OLED stack where the extremely thin encapsulation layer does not provide perfect coverage. Particularly, the swelling of poly(3,4-ethylenedioxythiophene) mixed with poly(styrenesulfonate), which is a popular choice for the planarization of the bottom electrode and at the same time acts as a hole injection layer, affects the effectiveness of the encapsulation layer.

  3. Effect of double MgO tunneling barrier on thermal stability and TMR ratio for perpendicular MTJ spin-valve with tungsten layers

    NASA Astrophysics Data System (ADS)

    Lee, Seung-Eun; Takemura, Yasutaka; Park, Jea-Gun

    2016-10-01

    A tunneling magneto-resistance (TMR) ratio of ˜163% at an annealing temperature of 400 °C was achieved in a single MgO-based perpendicular-magnetic-tunneling-junction (p-MTJ) spin valve with a tungsten (W)/tantalum (Ta) seed and W capping layer instead of with a Ta seed and capping layer. This was done by improving the interface perpendicular magnetic anisotropy (i-PMA) characteristic of the Co2Fe6B2 free layer and face-centered-cubic (f.c.c.) crystallinity of the MgO tunneling barrier. In particular, a TMR ratio of ˜141% at an annealing temperature of 400 °C and a thermal stability at room temperature of ˜61 were achieved in a double MgO-based p-MTJ spin valve with W/Ta seed, W spacer, and W capping layers by doubling the i-PMA magnetic moment and increasing slightly magnetic anisotropy field (Hk).

  4. DLTS study of deep centers created by Ar-ion bombardment in n- and p-type MBE AlGaAs

    NASA Astrophysics Data System (ADS)

    Kaniewska, M.; Sadowski, J.; Guziewicz, M.

    2004-07-01

    The thermal emission rate of dominant traps in molecular beam epitaxial n- and p-type AlGaAs subjected to Ar-ion beam etching has been studied by deep level transient spectroscopy. Emission signatures were determined and compared with results obtained by other authors for irradiation induced and grown-in defects in GaAs and AlGaAs. The most significant result of this study is the observation that the process-induced defects in n- as well as p-type AlGaAs exhibit emission signatures, which are characteristic of native defects found in GaAs. The effect is discussed in terms of a compensation effect and related band bending.

  5. Comparative simulations of a two-layer landfill barrier using the HELP Version 2. 0 and UNSAT-H Version 2. 0 computer codes

    SciTech Connect

    Nichols, W.E.

    1991-01-01

    This report documents the results of a simulation of the performance of a two-layer infiltration barrier for a nonradioactive dangerous waste landfill (NRDWL) at the US Department of Energy's Hanford Site in semi-arid southeast Washington State. The performance of the barrier was simulated for a period of 10 years using the UNSAT-H version 2.0 groundwater flow computer code. Pacific Northwest Laboratory performed this simulation to compare results using UNSAT-H 2.0 with those of the US Environmental Protection Agency's Hydrologic Evaluation of Landfill Performance (HELP) version 2.0 code. A conceptualization of the actual landfill barrier design was modeled using both codes. This model was simulated using 10 years of daily meteorological data collected at the Hanford Meteorological Station from 1979 through 1988. The intent of the comparison was to demonstrate that HELP conservatively predicts deep percolation of meteoric water at the Hanford Site. This demonstration required that the two codes be used to simulate the same conceptual model using identical, or at least essentially equivalent, input data. Comparing the results of the 10-year simulations showed that for the meteorological data and soil properties modeled the HELP 2.0 code was more conservative than the UNSAT-H code. HELP predicted a net drainage or deep percolation of 0.3592 cm (0.1556 in.) from the barrier for the 10-year period simulated. None to the UNSAT-H simulations predicted any deep percolation. HELP also predicted a greater proportion of precipitation returned to the atmosphere through evapotranspiration than did the UNSAT-H simulations in spite of the larger precipitation values being provided to HELP through an apparent data entry error. 14 refs., 11 figs., 8 tabs.

  6. Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al{sub 2}O{sub 3} films deposited by remote plasma atomic layer deposition

    SciTech Connect

    Jung, Hyunsoo; Choi, Hagyoung; Lee, Sanghun; Jeon, Heeyoung; Jeon, Hyeongtag

    2013-11-07

    In the present study, we investigated the gas and moisture permeation barrier properties of Al{sub 2}O{sub 3} films deposited on polyethersulfone films (PES) by capacitively coupled plasma (CCP) type Remote Plasma Atomic Layer Deposition (RPALD) at Radio Frequency (RF) plasma powers ranging from 100 W to 400 W in 100 W increments using Trimethylaluminum [TMA, Al(CH{sub 3}){sub 3}] as the Al source and O{sub 2} plasma as the reactant. To study the gas and moisture permeation barrier properties of 100-nm-thick Al{sub 2}O{sub 3} at various plasma powers, the Water Vapor Transmission Rate (WVTR) was measured using an electrical Ca degradation test. WVTR decreased as plasma power increased with WVTR values for 400 W and 100 W of 2.6 × 10{sup −4} gm{sup −2}day{sup −1} and 1.2 × 10{sup −3} gm{sup −2}day{sup −1}, respectively. The trends for life time, Al-O and O-H bond, density, and stoichiometry were similar to that of WVTR with improvement associated with increasing plasma power. Further, among plasma power ranging from 100 W to 400 W, the highest power of 400 W resulted in the best moisture permeation barrier properties. This result was attributed to differences in volume and amount of ion and radical fluxes, to join the ALD process, generated by O{sub 2} plasma as the plasma power changed during ALD process, which was determined using a plasma diagnosis technique called the Floating Harmonic Method (FHM). Plasma diagnosis by FHM revealed an increase in ion flux with increasing plasma power. With respect to the ALD process, our results indicated that higher plasma power generated increased ion and radical flux compared with lower plasma power. Thus, a higher plasma power provides the best gas and moisture permeation barrier properties.

  7. A three solar cell system based on a self-supporting, transparent AlGaAs top solar cell

    NASA Technical Reports Server (NTRS)

    Negley, Gerald H.; Rhoads, Sandra L.; Terranova, Nancy E.; Mcneely, James B.; Barnett, Allen M.

    1989-01-01

    Development of a three solar cell stack can lead to practical efficiencies greater than 30 percent (1x,AM0). A theoretical efficiency limitation of 43.7 percent at AM0 and one sun is predicted by this model. Including expected losses, a practical system efficiency of 36.8 percent is anticipated. These calculations are based on a 1.93eV/1.43eV/0.89eV energy band gap combination. AlGaAs/GaAs/GaInAsP materials can be used with a six-terminal wiring configuration. The key issues for multijunction solar cells are the top and middle solar cell performance and the sub-bandgap transparency. AstroPower has developed a technique to fabricate AlGaAs solar cells on rugged, self-supporting, transparent AlGaAs substrates. Top solar cell efficiencies greater than 11 percent AM0 have been achieved. State-of-the-art GaAs or InP devices will be used for the middle solar cell. GaInAsP will be used to fabricate the bottom solar cell. This material is lattice-matched to InP and offers a wide range of bandgaps for optimization of the three solar cell stack. Liquid phase epitaxy is being used to grow the quaternary material. Initial solar cells have shown open-circuit voltages of 462 mV for a bandgap of 0.92eV. Design rules for the multijunction three solar cell stack are discussed. The progress in the development of the self-supporting AlGaAs top solar cell and the GaInAsP bottom solar cell is presented.

  8. Interface induced uniaxial magnetic anisotropy in amorphous CoFeB films on AlGaAs(001).

    PubMed

    Hindmarch, A T; Kinane, C J; MacKenzie, M; Chapman, J N; Henini, M; Taylor, D; Arena, D A; Dvorak, J; Hickey, B J; Marrows, C H

    2008-03-21

    We demonstrate an isolated magnetic interface anisotropy in amorphous CoFeB films on (Al)GaAs(001), similar to that in epitaxial films but without a magnetocrystalline anisotropy term. The direction of the easy axis corresponds to that due to the interfacial interaction proposed for epitaxial films. We show that the anisotropy is determined by the relative orbital component of the atomic magnetic moments. Charge transfer is ruled out as the origin of the interface anisotropy, and it is postulated that the spin-orbit interaction in the semiconductor is crucial in determining the magnetic anisotropy.

  9. Proactive control of the metal-ceramic interface behavior of thermal barrier coatings using an artificial alpha-Al2O 3 layer

    NASA Astrophysics Data System (ADS)

    Su, Yi-Feng

    The reliability and life of thermal barrier coatings (TBCs) used in the hottest sections of advanced aircraft engines and power generation systems are largely dictated by: (1) the ability of a metallic bond coating to form an adherent thermally grown oxide (TGO) at the metal-ceramic interface and (2) the rate at which the TGO grows upon oxidation. It is postulated that a thin alpha-Al2O3 layer, if it could be directly deposited on a Ni-based alloy, will guide the alloy surface to form a TGO that is more tenacious and slower growing than what is attainable with state-of-the-art bond coatings. A chemical vapor deposition (CVD) process was used to directly deposit an alpha-Al2O3 layer on the surface of a single crystal Ni-bases superalloy. The layer was 150 nm thick, and consisted of small columnar grains (˜100 to 200 nm) with alpha-Al2O 3 as the major phase with a minute amount of theta-Al2O 3. Within 0.5 h of oxidation at 1150°C, the resulting TGO formed on the alloy surface underwent significant lateral grain growth. Consequently, within this time scale, the columnar nature of the TGO became well established. After 50 h, a network of ridges was clearly observed on the TGO surface instead of equiaxed grains typically observed on uncoated alloy surface. Comparison of the TGO morphologies observed with and without the CVD-Al2O 3 layer suggested that the transient oxidation of the alloy surface was considerably reduced. The alloy coated with the CVD-Al2O 3 layer also produced a much more adherent and slow growing TGO in comparison to that formed on the uncoated alloy surface. The CVD-Al2O 3 layer also improved its spallation resistance. Without the CVD-Al 2O3 layer, more than 50% of the TGO spalled off the alloy surface after 500 h in oxidation with significant wrinkling of the TGO that remained on the alloy surface. In contrast, the TGO remained intact with the CVD-Al2O3 layer after the 500 h exposure. Furthermore, the CVD layer significantly reduced the degree of

  10. Tuning the electron injection barrier between Co and C{sub 60} using Alq{sub 3} buffer layer

    SciTech Connect

    Wang Yuzhan; Qi Dongchen; Chen Shi; Wee, Andrew T. S.; Mao Hongying; Gao Xingyu

    2010-11-15

    We demonstrate that the electron injection barrier ({Delta}{sub e}) between Co and C{sub 60} can be tuned by inserting a thin Alq{sub 3} interlayer. Using ultraviolet photoemission spectroscopy, {Delta}{sub e} of C{sub 60} on Alq{sub 3}-predecorated Co ({Delta}{sub e}=0.3 eV) was found to be reduced by 0.3 eV compared with that of C{sub 60} deposited directly on the bare Co metal surface ({Delta}{sub e}=0.6 eV). Due to Fermi level pining at the Alq{sub 3}/Co interface, this tuning effect is independent of the thickness of Alq{sub 3} interlayer from multilayer to monolayer. Based on the experimental results, band level alignment diagrams are proposed for C{sub 60}/Co and C{sub 60}/Alq{sub 3}/Co interfaces with two different Alq{sub 3} thicknesses. Our findings could have potential applications for the reduction in the carrier injection barrier in organic spin valves.

  11. Interdigital Schottky barrier capacitor apparatus

    NASA Astrophysics Data System (ADS)

    Bierig

    1985-05-01

    The present invention relates broadly to Schottky barrier capacitors, and in particular to an interdigital Schottky barrier capacitor apparatus. In the prior art, the Schottky barrier diode is rather well known. In general, a Schottky barrier device comprises a semiconductor substrate layer that is formed by a first layer of heavily doped materials and a second layer of lightly doped materials upon which a layer of barrier metal is deposited thereon. The maximum reverse bias voltage which can be appplied to the Schottky barrier device is determined by the thickness of the lightly doped layer of semiconductive material which is deposited upon the substrate layer. This is only one of the factors that determined the reverse bias voltage, When a guardring is diffused into the lightly doped layer of semiconductive substrate material, the thickness of the layer is reduced, and therefore, the reverse bias voltage that can be applied to the Schottky device is reduced.

  12. Schottky barrier contrasts in single and bi-layer graphene contacts for MoS{sub 2} field-effect transistors

    SciTech Connect

    Du, Hyewon; Kim, Taekwang; Shin, Somyeong; Kim, Dahye; Seo, Sunae; Kim, Hakseong; Lee, Sang Wook; Sung, Ji Ho; Jo, Moon-Ho; Lee, Myoung Jae; Seo, David H.

    2015-12-07

    We have investigated single- and bi-layer graphene as source-drain electrodes for n-type MoS{sub 2} transistors. Ti-MoS{sub 2}-graphene heterojunction transistors using both single-layer MoS{sub 2} (1M) and 4-layer MoS{sub 2} (4M) were fabricated in order to compare graphene electrodes with commonly used Ti electrodes. MoS{sub 2}-graphene Schottky barrier provided electron injection efficiency up to 130 times higher in the subthreshold regime when compared with MoS{sub 2}-Ti, which resulted in V{sub DS} polarity dependence of device parameters such as threshold voltage (V{sub TH}) and subthreshold swing (SS). Comparing single-layer graphene (SG) with bi-layer graphene (BG) in 4M devices, SG electrodes exhibited enhanced device performance with higher on/off ratio and increased field-effect mobility (μ{sub FE}) due to more sensitive Fermi level shift by gate voltage. Meanwhile, in the strongly accumulated regime, we observed opposing behavior depending on MoS{sub 2} thickness for both SG and BG contacts. Differential conductance (σ{sub d}) of 1M increases with V{sub DS} irrespective of V{sub DS} polarity, while σ{sub d} of 4M ceases monotonic growth at positive V{sub DS} values transitioning to ohmic-like contact formation. Nevertheless, the low absolute value of σ{sub d} saturation of the 4M-graphene junction demonstrates that graphene electrode could be unfavorable for high current carrying transistors.

  13. Improving photoelectrochemical performance on quantum dots co-sensitized TiO2 nanotube arrays using ZnO energy barrier by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Zeng, Min; Zeng, Xi; Peng, Xiange; Zhu, Zhuo; Liao, Jianjun; Liu, Kai; Wang, Guizhen; Lin, Shiwei

    2016-12-01

    PbS and CdS quantum dots (QDs) have been deposited onto TiO2 nanotube arrays (TNTAs) in turn via a sonication-assisted successive ionic layer adsorption and reaction method. This method could uniformly decorate TNTAs with QDs, avoiding QDs aggregation at the mouth of TiO2 nanotube. The loading amounts of QDs on TNTAs could be controlled by adjusting the TNTAs length. Under one sun illumination, the QDs co-sensitized TNTAs (TNTAs/QDs) with the length of about 2.4 μm displayed the highest photocurrent of 4.32 mA cm-2, which is 27 times higher than that of the bare TNTAs. Introduction of a thin ZnO energy barrier by atomic layer deposition (ALD) between the TNTAs and QDs can further improve the photocurrent of TNTAs/QDs. And the TNTAs/QDs with 10 ALD cycles of ZnO interlayer exhibits the highest photocurrent of 5.24 mA cm-2 and best photoconversion efficiency of 4.9%, a more than 20% enhancement over the bare TNTAs/QDs. Such enhanced photoelectrochemical performance may be ascribed to the increased amounts of QDs on the TNTAs due to the introduction of ZnO interlayer. The benefits of ALD layers play a crucial role in development and optimization of high-performance photoelectrodes in the near future.

  14. Improving the efficiency of cadmium sulfide-sensitized titanium dioxide/indium tin oxide glass photoelectrodes using silver sulfide as an energy barrier layer and a light absorber

    NASA Astrophysics Data System (ADS)

    Chen, Chong; Zhai, Yong; Li, Chunxi; Li, Fumin

    2014-11-01

    Cadmium sulfide (CdS) and silver sulfide (Ag2S) nanocrystals are deposited on the titanium dioxide (TiO2) nanocrystalline film on indium tin oxide (ITO) substrate to prepare CdS/Ag2S/TiO2/ITO photoelectrodes through a new method known as the molecular precursor decomposition method. The Ag2S is interposed between the TiO2 nanocrystal film and CdS nanocrystals as an energy barrier layer and a light absorber. As a consequence, the energy conversion efficiency of the CdS/Ag2S/TiO2/ITO electrodes is significantly improved. Under AM 1.5 G sunlight irradiation, the maximum efficiency achieved for the CdS(4)/Ag2S/TiO2/ITO electrode is 3.46%, corresponding to an increase of about 150% as compared to the CdS(4)/TiO2/ITO electrode without the Ag2S layer. Our experimental results show that the improved efficiency is mainly due to the formation of Ag2S layer that may increase the light absorbance and reduce the recombination of photogenerated electrons with redox ions from the electrolyte.

  15. Improving the efficiency of cadmium sulfide-sensitized titanium dioxide/indium tin oxide glass photoelectrodes using silver sulfide as an energy barrier layer and a light absorber

    PubMed Central

    2014-01-01

    Cadmium sulfide (CdS) and silver sulfide (Ag2S) nanocrystals are deposited on the titanium dioxide (TiO2) nanocrystalline film on indium tin oxide (ITO) substrate to prepare CdS/Ag2S/TiO2/ITO photoelectrodes through a new method known as the molecular precursor decomposition method. The Ag2S is interposed between the TiO2 nanocrystal film and CdS nanocrystals as an energy barrier layer and a light absorber. As a consequence, the energy conversion efficiency of the CdS/Ag2S/TiO2/ITO electrodes is significantly improved. Under AM 1.5 G sunlight irradiation, the maximum efficiency achieved for the CdS(4)/Ag2S/TiO2/ITO electrode is 3.46%, corresponding to an increase of about 150% as compared to the CdS(4)/TiO2/ITO electrode without the Ag2S layer. Our experimental results show that the improved efficiency is mainly due to the formation of Ag2S layer that may increase the light absorbance and reduce the recombination of photogenerated electrons with redox ions from the electrolyte. PMID:25411566

  16. Improving the efficiency of cadmium sulfide-sensitized titanium dioxide/indium tin oxide glass photoelectrodes using silver sulfide as an energy barrier layer and a light absorber.

    PubMed

    Chen, Chong; Zhai, Yong; Li, Chunxi; Li, Fumin

    2014-01-01

    Cadmium sulfide (CdS) and silver sulfide (Ag2S) nanocrystals are deposited on the titanium dioxide (TiO2) nanocrystalline film on indium tin oxide (ITO) substrate to prepare CdS/Ag2S/TiO2/ITO photoelectrodes through a new method known as the molecular precursor decomposition method. The Ag2S is interposed between the TiO2 nanocrystal film and CdS nanocrystals as an energy barrier layer and a light absorber. As a consequence, the energy conversion efficiency of the CdS/Ag2S/TiO2/ITO electrodes is significantly improved. Under AM 1.5 G sunlight irradiation, the maximum efficiency achieved for the CdS(4)/Ag2S/TiO2/ITO electrode is 3.46%, corresponding to an increase of about 150% as compared to the CdS(4)/TiO2/ITO electrode without the Ag2S layer. Our experimental results show that the improved efficiency is mainly due to the formation of Ag2S layer that may increase the light absorbance and reduce the recombination of photogenerated electrons with redox ions from the electrolyte.

  17. Investigation of the release of Si from SiO{sub 2} during the formation of manganese/ruthenium barrier layers

    SciTech Connect

    McCoy, A. P.; Casey, P.; Bogan, J.; Byrne, C.; Hughes, G.

    2013-05-20

    The thermodynamic and structural stability of ruthenium-manganese diffusion barriers on SiO{sub 2} is assessed. A {approx}2 nm film composed of partially oxidized manganese (MnO{sub x} where x < 1) was deposited on a 3 nm thick Ru film and the Mn-MnO{sub x}/Ru/SiO{sub 2} structure was subsequently thermally annealed. X-ray photoelectron spectroscopy and secondary ion mass spectroscopy studies suggest the release and upward diffusion of Si from the dielectric substrate as a result of manganese-silicate formation at the Ru/SiO{sub 2} interface. The migration of Si up through the Ru film results in further manganese-silicate formation upon its interaction with the Mn-MnO{sub x} deposited layer.

  18. Chemical and structural investigations of the incorporation of metal manganese into ruthenium thin films for use as copper diffusion barrier layers

    SciTech Connect

    McCoy, A. P.; Casey, P.; Bogan, J.; Hughes, G.; Lozano, J. G.; Nellist, P. D.

    2012-12-03

    The incorporation of manganese into a 3 nm ruthenium thin-film is presented as a potential mechanism to improve its performance as a copper diffusion barrier. Manganese ({approx}1 nm) was deposited on an atomic layer deposited Ru film, and the Mn/Ru/SiO{sub 2} structure was subsequently thermally annealed. X-ray photoelectron spectroscopy studies reveal the chemical interaction of Mn with the SiO{sub 2} substrate to form manganese-silicate (MnSiO{sub 3}), implying the migration of the metal through the Ru film. Electron energy loss spectroscopy line profile measurements of the intensity of the Mn signal across the Ru film confirm the presence of Mn at the Ru/SiO{sub 2} interface.

  19. Performance enhancement of blue light-emitting diodes without an electron-blocking layer by using special designed p-type doped InGaN barriers.

    PubMed

    Zhang, Yun-Yan; Fan, Guang-Han; Yin, Yi-An; Yao, Guang-Rui

    2012-01-02

    In this study, the characteristics of the nitride-based blue light-emitting diode (LED) without an electron-blocking layer (EBL) are analyzed numerically. The emission spectra, carrier concentrations in the quantum wells (QWs), energy band diagrams, electrostatic fields, and internal quantum efficiency (IQE) are investigated. The simulation results indicate that the LED without an EBL has a better hole-injection efficiency and smaller electrostatic fields in its active region over the conventional LED with an AlGaN EBL. The simulation results also show that the LED without an EBL has severe efficiency droop. However, when the special designed p-type doped InGaN QW barriers are used, the efficiency droop is markedly improved and the electroluminescence (EL) emission intensity is greatly enhanced which is due to the improvement of the hole uniformity in the active region and small electron leakage.

  20. Improving hole injection and carrier distribution in InGaN light-emitting diodes by removing the electron blocking layer and including a unique last quantum barrier

    SciTech Connect

    Cheng, Liwen Chen, Haitao; Wu, Shudong

    2015-08-28

    The effects of removing the AlGaN electron blocking layer (EBL), and using a last quantum barrier (LQB) with a unique design in conventional blue InGaN light-emitting diodes (LEDs), were investigated through simulations. Compared with the conventional LED design that contained a GaN LQB and an AlGaN EBL, the LED that contained an AlGaN LQB with a graded-composition and no EBL exhibited enhanced optical performance and less efficiency droop. This effect was caused by an enhanced electron confinement and hole injection efficiency. Furthermore, when the AlGaN LQB was replaced with a triangular graded-composition, the performance improved further and the efficiency droop was lowered. The simulation results indicated that the enhanced hole injection efficiency and uniform distribution of carriers observed in the quantum wells were caused by the smoothing and thinning of the potential barrier for the holes. This allowed a greater number of holes to tunnel into the quantum wells from the p-type regions in the proposed LED structure.

  1. Large-scale fabrication of linear low density polyethylene/layered double hydroxides composite films with enhanced heat retention, thermal, mechanical, optical and water vapor barrier properties

    NASA Astrophysics Data System (ADS)

    Xie, Jiazhuo; Zhang, Kun; Zhao, Qinghua; Wang, Qingguo; Xu, Jing

    2016-11-01

    Novel LDH intercalated with organic aliphatic long-chain anion was large-scale synthesized innovatively by high-energy ball milling in one pot. The linear low density polyethylene (LLDPE)/layered double hydroxides (LDH) composite films with enhanced heat retention, thermal, mechanical, optical and water vapor barrier properties were fabricated by melt blending and blowing process. FT IR, XRD, SEM results show that LDH particles were dispersed uniformly in the LLDPE composite films. Particularly, LLDPE composite film with 1% LDH exhibited the optimal performance among all the composite films with a 60.36% enhancement in the water vapor barrier property and a 45.73 °C increase in the temperature of maximum mass loss rate compared with pure LLDPE film. Furthermore, the improved infrared absorbance (1180-914 cm-1) of LLDPE/LDH films revealed the significant enhancement of heat retention. Therefore, this study prompts the application of LLDPE/LDH films as agricultural films with superior heat retention.

  2. Contrasting conduction mechanisms of two internal barrier layer capacitors: (Mn, Nb)-doped SrTiO3 and CaCu3Ti4O12

    NASA Astrophysics Data System (ADS)

    Tsuji, Kosuke; Chen, Wei-Ting; Guo, Hanzheng; Lee, Wen-Hsi; Guillemet-Fritsch, Sophie; Randall, Clive A.

    2017-02-01

    The d.c. conduction is investigated in the two different types of internal barrier layer capacitors, namely, (Mn, Nb)-doped SrTiO3 (STO) and CaCu3Ti4O12 (CCTO). Scanning electron microscopy (SEM) and Capacitance - Voltage (C-V) analysis are performed to estimate the effective electric field at a grain boundary, EGB. Then, the d.c. conduction mechanism is discussed based on the J (Current density)-EGB characteristics. Three different conduction mechanisms are successively observed with the increase of EGB in both systems. In (Mn, Nb)-doped STO, non-linear J-EGB characteristics is temperature dependent at the intermediate EGB and becomes relatively insensitive to the temperature at the higher EGB. The J- EGB at each regime is explained by the Schottky emission (SE) followed by Fowler-Nordheim (F-N) tunneling. Based on the F-N tunneling, the breakdown voltage is then scaled by the function of the depletion layer thickness and Schottky barrier height at the average grain boundary. The proposed function shows a clear linear relationship with the breakdown. On the other hand, F-N tunneling was not observed in CCTO in our measurement. Ohmic, Poole-Frenkel (P-F), and SE are successively observed in CCTO. The transition point from P-F and SE depends on EGB and temperature. A charge-based deep level transient spectroscopy study reveals that 3 types of trap states exist in CCTO. The trap one with Et ˜ 0.65 eV below the conduction band is found to be responsible for the P-F conduction.

  3. Chemical and structural investigation of the role of both Mn and Mn oxide in the formation of manganese silicate barrier layers on SiO{sub 2}

    SciTech Connect

    Casey, P.; Bogan, J.; Hughes, G.; Lozano, J. G.; Nellist, P. D.

    2011-09-01

    In this study, Mn silicate (MnSiO{sub 3}) barrier layers were formed on thermally grown SiO{sub 2} using both metallic Mn and oxidized Mn films, in order to investigate the role of oxygen in determining the extent of the interaction between the deposited Mn and the SiO{sub 2} substrate. Using x-ray photoelectron spectroscopy, it has been shown that a metallic Mn film with an approximate thickness of 1 nm cannot be fully converted to Mn silicate following vacuum annealing to 500 deg. C. Transmission electron microscopy (TEM) analysis suggests the maximum MnSiO{sub 3} layer thickness obtainable using metallic Mn is {approx}1.7 nm. In contrast, a {approx}1 nm partially oxidized Mn film can be fully converted to Mn silicate following thermal annealing to 400 deg. C, forming a MnSiO{sub 3} layer with a measured thickness of 2.6 nm. TEM analysis also clearly shows that MnSiO{sub 3} growth results in a corresponding reduction in the SiO{sub 2} layer thickness. It has also been shown that a fully oxidized Mn oxide thin film can be converted to Mn silicate, in the absence of metallic Mn. Based on these results it is suggested that the presence of Mn oxide species at the Mn/SiO{sub 2} interface facilitates the conversion of SiO{sub 2} to MnSiO{sub 3}, in agreement with previously published studies.

  4. Long-term effects of multiply pulsed dielectric barrier discharges in air on thin water layers over tissue: stationary and random streamers

    NASA Astrophysics Data System (ADS)

    Tian, Wei; Kushner, Mark J.

    2015-12-01

    Tissue covered by thin liquid layers treated by atmospheric pressure plasmas for biomedical applications ultimately requires a reproducible protocol for human healthcare. The desired outcomes of wet tissue treatment by dielectric barrier discharges (DBDs) depend on the plasma dose which determines the integral fluence of radicals, ions, electric fields and UV/VUV photons incident onto the tissue. These fluences are controlled by power, frequency and treatment time. To first order, these parameters determine the energy deposition (J cm-2) onto the tissue. However, energy deposition may not be the only parameter that determines the fluences of reactants to the underlying tissue. In this paper, we report on a computational investigation of multipulse DBDs interacting with wet tissue. The DBDs were simulated for 100 pulses at different repetition rates and liquid thicknesses followed by 10 s or more of afterglow. Two schemes were investigated—stationary and random. In the stationary scheme, the DBD plasma streamer continues to strike at the same location on the liquid layer, whereas in the random scheme the plasma streamer strikes at random locations on the liquid layer. These differences in streamer locations strongly affect the spatial distribution of solvated species such as OHaq and H2O2aq (‘aq’ represents an aqueous species), which have high rates of solvation. The spatial distribution of species such as NOaq, which have low rates of solvation, are less affected by the location of the streamer due to the remediating effects of diffusion in the air. The end result is that fluences to the tissue are sensitive to the spatial location of the streamer due to the ensuing reactions in the liquid between species that have low and high rates of solvation. These reactions can be controlled not only through location of the streamer, but also by repetition rate and thickness of the liquid layer.

  5. INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Line width of a single longitudinal mode emitted by an AlGaAs heterojunction laser

    NASA Astrophysics Data System (ADS)

    Bogatov, Alexandr P.; Eliseev, P. G.; Luk'yanov, S. A.; Pak, G. T.; Petrakova, T. V.

    1988-11-01

    A nonmonotonic dependence of the emission line width on the power was observed for a single longitudinal mode of an AlGaAs heterojunction laser. This behavior could be due to the dependence of the waveguide coefficient of the amplitude-phase coupling on the nature of operation of the laser.

  6. Flexible thin-layer dielectric barrier discharge plasma treatment of pork butt and beef loin: effects on pathogen inactivation and meat-quality attributes.

    PubMed

    Jayasena, Dinesh D; Kim, Hyun Joo; Yong, Hae In; Park, Sanghoo; Kim, Kijung; Choe, Wonho; Jo, Cheorun

    2015-04-01

    The effects of a flexible thin-layer dielectric barrier discharge (DBD) plasma system using a sealed package on microbial inactivation and quality attributes of fresh pork and beef were tested. Following a 10-min treatment, the microbial-load reductions of Listeria monocytogenes, Escherichia coli O157:H7, and Salmonella Typhimurium were 2.04, 2.54, and 2.68 Log CFU/g in pork-butt samples and 1.90, 2.57, and 2.58 Log CFU/g in beef-loin samples, respectively. Colorimetric analysis showed that DBD-plasma treatment did not significantly affect L* values (lightness) of pork and beef samples, but lowered a* values (redness) significantly after 5- and 7.5-min exposures. The plasma treatment significantly influenced lipid oxidation only after a 10-min exposure. The texture of both types of meat was unaffected by plasma treatment. All sensory parameters of treated and non-treated samples were comparable except for taste, which was negatively influenced by the plasma treatment (P < 0.05). This thin-layer DBD-plasma system can be applied to inactivate foodborne pathogens. The observed minor deterioration of meat quality might be prevented by the use of hurdle technology.

  7. 80% tunneling magnetoresistance at room temperature for thin Al-O barrier magnetic tunnel junction with CoFeB as free and reference layers

    NASA Astrophysics Data System (ADS)

    Wei, H. X.; Qin, Q. H.; Ma, M.; Sharif, R.; Han, X. F.

    2007-05-01

    Magnetic tunnel junctions (MTJs) with structures of Ta(5)/Cu(10)/Ta(5)/Ir21Mn79(10)/Co75Fe25(2)/Ru(0.75)/Co40Fe40B20(3)/Al(0.6)-O /Co40Fe40B20(2.5)/Ta(3)/Ru(7) (units in nanometers) were deposited via ultrahigh vacuum magnetron sputtering (ULVAC). Microscale ring-type magnetic tunnel junctions (RMTJs) with an outer radius of 2μm and an inner radius of 1μm were patterned using standard UV lithography combined with ion milling. Both reference and free layers were Co40Fe40B20 and a very thin Al-O (0.6nm) barrier layer was used. Tunneling magnetoresistances (TMRs) of up to 81% at room temperature and 107% at 4.2K were observed. These RMTJs with high TMR and low coercivity, of about 26Oe, combined with the ring-type geometry, which greatly reduces stray magnetic field, are ideal for certain magnetic field sensor applications.

  8. High-barrier Schottky contact on n-type 4H-SiC epitaxial layer and studies of defect levels by deep level transient spectroscopy (DLTS)

    NASA Astrophysics Data System (ADS)

    Nguyen, Khai V.; Pak, Rahmi O.; Oner, Cihan; Mannan, Mohammad A.; Mandal, Krishna C.

    2015-08-01

    High barrier Schottky contact has been fabricated on 50 μm n-type 4H-SiC epitaxial layers grown on 350 μm thick substrate 8° off-cut towards the [11̅20] direction. The 4H-SiC epitaxial wafer was diced into 10 x 10 mm2 samples. The metal-semiconductor junctions were fabricated by photolithography and dc sputtering with ruthenium (Ru). The junction properties were characterized through current-voltage (I-V) and capacitance-voltage (C-V) measurements. Detectors were characterized by alpha spectroscopy measurements in terms of energy resolution and charge collection efficiency using a 0.1 μCi 241Am radiation source. It was found that detectors fabricated from high work function rare transition metal Ru demonstrated very low leakage current and significant improvement of detector performance. Defect characterization of the epitaxial layers was conducted by deep level transient spectroscopy (DLTS) to thoroughly investigate the defect levels in the active region. The presence of a new defect level induced by this rare transition metal-semiconductor interface has been identified and characterized.

  9. High-performance enhancement-mode AlGaN/GaN MOS-HEMTs with fluorinated stack gate dielectrics and thin barrier layer

    NASA Astrophysics Data System (ADS)

    Tao, Gao; Ruimin, Xu; Kai, Zhang; Yuechan, Kong; Jianjun, Zhou; Cen, Kong; Xinxin, Yu; Xun, Dong; Tangsheng, Chen

    2016-06-01

    We present high-performance enhancement-mode AlGaN/GaN metal—oxide—semiconductor high-electron mobility transistors (MOS-HEMTs) by a fluorinated gate dielectric technique. A nanolaminate of an Al2O3/La x Al1-x O 3/Al2O3 stack (x≈0.33) grown by atomic layer deposition is employed to avoid fluorine ions implantation into the scaled barrier layer. Fabricated enhancement-mode MOS-HEMTs exhibit an excellent performance as compared to those with the conventional dielectric-last technique, delivering a large maximum drain current of 916 mA/mm and simultaneously a high peak transconductance of 342 mS/mm. The balanced DC characteristics indicate that advanced gate stack dielectrics combined with buffered fluorine ions implantation have a great potential for high speed GaN E/D-mode integrated circuit applications. Project supported by the National Natural Science Foundation of China (Nos. 61504125, 61474101, 61106130 61076120, 61505181), and the Natural Science Foundation of Jiangsu Province of China (Nos. BK20131072, BE2012007, BK2012516).

  10. Direct imaging of band profile in single layer MoS2 on graphite: metallic edge states and the lateral Schottky barrier

    NASA Astrophysics Data System (ADS)

    Zhang, Chendong; Hsu, Chang-Lung; Chang, Yong-Huang; Li, Lain-Jong; Shih, Chih-Kang

    2014-03-01

    Recently, single layer (SL) Transition metal dichalcogenides MX2 has attracted intense interests as the band structures change from indirect to direct gap. In addition, the valley degeneracy is also lifted in SL MX2. These properties have important implications in nanoelectronics and optoelectronics. The SL MX2 islands often come with a triangular form with straight edges and it has been shown theoretically these are zig-zag edge with metallic states. Here we use scanning tunneling microscopy/spectroscopy (STM/S) to map out the electronic structure of single layer MoS2 grown on HOPG (highly oriented pyrolytic graphite) using CVD. In the region away from the edge, the MoS2 band profile shows a homogeneous band gap of about 1.95 +/- 0.1 eV, consistent with the optical studies before. Moreover, the Fermi level locates at 0.15 +/- 0.05 eV below the conduction band minimum (CBM), confirming its n-type nature. The band profile is bend upward by about 0.5 eV within 5 nm from the edge. At the edge, the metallic nature is observed from finite conductivity in the gap region. This study shows that the bulk SL MoS2 and its metallic edge formed a lateral Schottky barrier with a narrow depletion region of 5 nm and the Fermi level is pinned at 0.65 eV below the CBM.

  11. Free standing TiO2 nanotube array electrodes with an ultra-thin Al2O3 barrier layer and TiCl4 surface modification for highly efficient dye sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Gao, Xianfeng; Guan, Dongsheng; Huo, Jingwan; Chen, Junhong; Yuan, Chris

    2013-10-01

    Dye sensitized solar cells were fabricated with free standing TiO2 nanotube (TNT) array films, which were prepared by template assisted atomic layer deposition (ALD) with precise wall thickness control. Efforts to improve the photovoltaic performance were made by using Al2O3 barrier layer coating in conjunction with TiCl4 surface modification. An Al2O3 thin layer was deposited on the TNT electrode by ALD to serve as the charge recombination barrier, but it suffers from the drawback of decreasing the photoelectron injection from dye into TiO2 when the barrier layer became too thick. With the TiCl4 treatment in combination with optimal thickness coating, this problem could be avoided. The co-surface treated electrode presents superior surface property with low recombination rate and good electron transport property. A high conversion efficiency of 8.62% is obtained, which is about 1.8 times that of the device without surface modifications.Dye sensitized solar cells were fabricated with free standing TiO2 nanotube (TNT) array films, which were prepared by template assisted atomic layer deposition (ALD) with precise wall thickness control. Efforts to improve the photovoltaic performance were made by using Al2O3 barrier layer coating in conjunction with TiCl4 surface modification. An Al2O3 thin layer was deposited on the TNT electrode by ALD to serve as the charge recombination barrier, but it suffers from the drawback of decreasing the photoelectron injection from dye into TiO2 when the barrier layer became too thick. With the TiCl4 treatment in combination with optimal thickness coating, this problem could be avoided. The co-surface treated electrode presents superior surface property with low recombination rate and good electron transport property. A high conversion efficiency of 8.62% is obtained, which is about 1.8 times that of the device without surface modifications. Electronic supplementary information (ESI) available: UV-Vis spectra of desorbed N719 dyes from

  12. Joint assimilation of Aquarius-derived sea surface salinity and AVHRR-derived sea surface temperature in an ocean general circulation model using SEEK filter: Implication for mixed layer depth and barrier layer thickness

    NASA Astrophysics Data System (ADS)

    Chakraborty, Abhisek; Sharma, Rashmi; Kumar, Raj; Basu, Sujit

    2015-10-01

    Sea surface salinity (SSS) from Aquarius mission and sea surface temperature (SST) from Advanced Very High Resolution Radiometer (AVHRR) for the years 2012-2014 are assimilated into the global Massachusetts Institute of Technology General Circulation Model (MITGCM). Investigation of the impact of assimilation of these two data sets on simulated mixed layer depth (MLD) and barrier layer thickness (BLT) forms the core of our study. The method of assimilation is the Singular Evolutive Extended Kalman (SEEK) filter. Several assimilation runs are performed. Single-parameter assimilation, as well as joint assimilation, is conducted. To begin with, the model simulated SST and SSS are compared with independent Argo observations of these two parameters. Use of latitudinally varying error variances, which is a novel feature of our study, gives rise to the significant improvement in the simulation of SSS and SST. The best result occurs when joint assimilation is performed. Afterward, simulated MLD and BLT are compared with the same parameters derived from Argo observations forming an independent validation data set. Comparisons are performed both in temporal and spatial domains. Significant positive impact of assimilation is found in all the cases studied, and joint assimilation is found to outperform single-parameter assimilation in each of the cases considered. It is found that simulations of MLD and BLT improve up to 24% and 29%, respectively, when a joint assimilation of SSS and SST is carried out.

  13. Performance of two-layer thermal barrier systems on directionally solidified Ni-Al-Mo and comparative effects of alloy thermal expansion on system life

    NASA Technical Reports Server (NTRS)

    Stecura, S.

    1980-01-01

    A promising two-layer thermal barrier coating system (TBS), Ni-16.4Cr-5.1A1-0.15Y/ZrO2-6.1Y2O3 (all in weight percent), was identified for directionally solidified Ni-Al-Mo (gamma/gamma' alpha). In cyclic furnace tests at 1095 C this system on gamma/gamma' alpha was better than Ni-16. 4Cr-5.1Al-0.15Y/ZrO2-7.8Y2O3 by about 50 percent. In natural gas - oxygen torch rig tests at 1250 C the ZrO2-6.1Y2O3 coating was better than the ZrO2-7.8Y2O3 coating by 95 percent, on MAR-M509 substrates and by 60 percent on gamma/gamma' alpha substrates. Decreasing the coefficient of thermal expansion of the substrate material from 17-18x10 to the -6 power/C (MAR-M200 + Hf and MAR-M509) to 11x10 to the -6 power/C (gamma/gamma' alpha) also resulted in improved TBS life. For example, in natural gas - oxygen torch rig tests at 1250 C, the life of Ni-16.4Cr-5.1Al-0.15Y/ZrO26.1Y2O3 was about 30 percent better on gamma/gamma' alpha than on MAR-M509 substrates. Thus compositional changes in the bond and thermal barrier coatings were shown to have a greater effect on TBS life than does the coefficient of thermal expansion.

  14. Measuring the Degeneracy of Discrete Energy Levels Using a GaAs /AlGaAs Quantum Dot

    NASA Astrophysics Data System (ADS)

    Hofmann, A.; Maisi, V. F.; Gold, C.; Krähenmann, T.; Rössler, C.; Basset, J.; Märki, P.; Reichl, C.; Wegscheider, W.; Ensslin, K.; Ihn, T.

    2016-11-01

    We demonstrate an experimental method for measuring quantum state degeneracies in bound state energy spectra. The technique is based on the general principle of detailed balance and the ability to perform precise and efficient measurements of energy-dependent tunneling-in and -out rates from a reservoir. The method is realized using a GaAs /AlGaAs quantum dot allowing for the detection of time-resolved single-electron tunneling with a precision enhanced by a feedback control. It is thoroughly tested by tuning orbital and spin degeneracies with electric and magnetic fields. The technique also lends itself to studying the connection between the ground-state degeneracy and the lifetime of the excited states.

  15. Optical reflection from the Bragg lattice of AsSb metal nanoinclusions in an AlGaAs matrix

    SciTech Connect

    Ushanov, V. I.; Chaldyshev, V. V.; Preobrazhenskii, V. V.; Putyato, M. A.; Semyagin, B. R.

    2013-08-15

    The optical properties of metal-semiconductor metamaterials based on an AlGaAs matrix are studied. The specific feature of these materials is that there are As and AsSb nanoinclusion arrays which modify the dielectric properties of the material. These nanoinclusions are randomly arranged in the medium or form a Bragg structure with a reflectance peak at a wavelength close to 750 nm, corresponding to the transparency region of the matrix. The reflectance spectra are studied for s- and p-polarized light at different angles of incidence. It is shown that (i) As nanoinclusion arrays only slightly influence the optical properties of the medium in the wavelength range 700-900 nm, (ii) chaotic AsSb nanoinclusion arrays cause strong scattering of light, and (iii) the spatial periodicity in the arrangement of AsSb nanoinclusions is responsible for Bragg resonance in the optical reflection.

  16. Underground waste barrier structure

    DOEpatents

    Saha, Anuj J.; Grant, David C.

    1988-01-01

    Disclosed is an underground waste barrier structure that consists of waste material, a first container formed of activated carbonaceous material enclosing the waste material, a second container formed of zeolite enclosing the first container, and clay covering the second container. The underground waste barrier structure is constructed by forming a recessed area within the earth, lining the recessed area with a layer of clay, lining the clay with a layer of zeolite, lining the zeolite with a layer of activated carbonaceous material, placing the waste material within the lined recessed area, forming a ceiling over the waste material of a layer of activated carbonaceous material, a layer of zeolite, and a layer of clay, the layers in the ceiling cojoining with the respective layers forming the walls of the structure, and finally, covering the ceiling with earth.

  17. Wet oxidation of Al{sub x}GA{sub 1-x}As: arsenic barriers on the road to mis

    SciTech Connect

    Ashby, C.I.H.; Sullivan, J.P.; Newcomer, P.P.; Missert, N.A.; Hou, H.Q.; Hammons, B.E.; Baca, A.G.

    1997-02-01

    Three characteristic regimes were identified during wet thermal oxidation of AlxGa(1-x)As (x=1 to 0.90) on GaAs: oxidation of Al and Ga in the alloy to form to an amorphous oxide layer, formation and elimination of elemental As and of amorphous As2O3, and crystallization of the oxide film. Residual As can produce up to a 100fold increase in leakage current and a 30% increase in bulk dielectric constant. Very low As levels produce partial Fermi-level pinning at the oxidized AlxGa(1-x)As/GaAs interface. Local Schottky- barrier pinning of the Fermi level at As precipitates at the oxide/GaAs interface may be the source of the apparent high interface state density. The presence of thermodynamically favored interfacial As may impose a fundamental limit on the application of AlGaAs wet oxidation for achieving MIS devices without post-oxidation processing to remove the residual As from the interface.

  18. Electronic properties of GaSe, InSe, GaS and GaTe layered semiconductors: charge neutrality level and interface barrier heights

    NASA Astrophysics Data System (ADS)

    Brudnyi, V. N.; Sarkisov, S. Yu; Kosobutsky, A. V.

    2015-11-01

    Density functional theory calculations have been applied to study the structural and electronic properties of layered ɛ-GaSe, γ-InSe, β-GaS and GaTe compounds. The optimized lattice parameters have been obtained using vdW-DF2-C09 exchange-correlation functional, which is able to describe dispersion forces and produces interlayer distances in close agreement with experiments. Based on the calculated electronic band structures, the energy position of the charge neutrality level (CNL) in the III-VI semiconductors has been estimated for the first time. The room-temperature values of CNL are found to be 0.80 eV, 1.02 eV, 0.72 eV and 0.77 eV for ɛ-GaSe, β-GaS, GaTe and γ-InSe, respectively. The persistent p-type conductivity of the intentionally undoped ɛ-GaSe, β-GaS and GaTe and n-type conductivity of γ-InSe crystals are discussed and explained using the concept of CNL. We also estimated the barrier heights for a number of metal/semiconductor and semiconductor/semiconductor interfaces assuming partial Fermi level pinning at the CNL. A reasonable agreement between our calculations and the available experimental data has been obtained.

  19. Persistent photoconductivity in AlGaN/GaN heterojunction channels caused by the ionization of deep levels in the AlGaN barrier layer

    SciTech Connect

    Murayama, H.; Akiyama, Y.; Niwa, R.; Sakashita, H.; Sakaki, H.; Kachi, T.; Sugimoto, M.

    2013-12-04

    Time-dependent responses of drain current (I{sub d}) in an AlGaN/GaN HEMT under UV (3.3 eV) and red (2.0 eV) light illumination have been studied at 300 K and 250 K. UV illumination enhances I{sub d} by about 10 %, indicating that the density of two-dimensional electrons is raised by about 10{sup 12} cm{sup −2}. When UV light is turned off at 300 K, a part of increased I{sub d} decays quickly but the other part of increment is persistent, showing a slow decay. At 250 K, the majority of increment remains persistent. It is found that such a persistent increase of I{sub d} at 250 K can be partially erased by the illumination of red light. These photo-responses are explained by a simple band-bending model in which deep levels in the AlGaN barrier get positively charged by the UV light, resulting in a parabolic band bending in the AlGaN layer, while some potion of those deep levels are neutralized by the red light.

  20. Increased electro-optic effect in a guest–host electro-optic polymer by adding PEDOT:PSS as an interfacial barrier layer

    NASA Astrophysics Data System (ADS)

    Jouane, Youssef; Luo, Jingdong; K-Y Jen, Alex; Enami, Yasufumi

    2017-04-01

    We used an ellipsometric reflective technique developed by Teng and Man to measure the electrooptic (EO) coefficients of poled thin films in EO multilayer devices with and without a poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) conductive barrier layer (CBL). The EO coefficients for the device containing PEDOT:PSS were 260 and 215 pm V‑1 at 1.31 and 1.55 μm, respectively, which are higher than those for the device without the CBL. Indeed, the highest EO coefficient for the EO polymer poled without TiO2 or the CBL was 166 pm V‑1 at 1.55 μm, consistent with that obtained for our modulator devices (160 pm V‑1). We investigated the electrical properties, surface morphology, and optical quality of a PEDOT:PSS CBL in EO polymer/TiO2 multilayer-slot waveguide modulators. We demonstrated that the PEDOT:PSS functions as an efficient CBL to pole EO polymers in hybrid EO polymer/TiO2 vertical-slot waveguide modulators.

  1. The influence of Sb doping on the growth and electronic properties of GaAs(100) and AlGaAs(100)

    NASA Technical Reports Server (NTRS)

    Jamison, K. D.; Chen, H. C.; Bensaoula, A.; Lim, W.; Trombetta, L.

    1989-01-01

    Isoelectronic doping using antimony has been shown to reduce traps and improve material properties during epitaxial growth of Si doped GaAs(100) and AlGaAs(100). In this study, the effect of the antimony dopant on the optimal growth temperature is examined with the aim of producing high-quality heterostructures at lower temperatues. High-quality films of GaAs and AlGaAs have been grown by molecular-beam epitaxy at the normal growth temperatures of 610 and 700 C, respectively, and 50-100 C below this temperature using varying small amounts of Sb as a dopant. Electrical properties of the films were then examined using Hall mobility measurements and deep-level transient spectroscopy.

  2. Cu diffusion in single-crystal and polycrystalline TiN barrier layers: A high-resolution experimental study supported by first-principles calculations

    SciTech Connect

    Mühlbacher, Marlene; Bochkarev, Anton S.; Mendez-Martin, Francisca; Schalk, Nina; Mitterer, Christian; Sartory, Bernhard; Chitu, Livia; Popov, Maxim N.; Spitaler, Jürgen; Puschnig, Peter; Ding, Hong; Lu, Jun; Hultman, Lars

    2015-08-28

    Dense single-crystal and polycrystalline TiN/Cu stacks were prepared by unbalanced DC magnetron sputter deposition at a substrate temperature of 700 °C and a pulsed bias potential of −100 V. The microstructural variation was achieved by using two different substrate materials, MgO(001) and thermally oxidized Si(001), respectively. Subsequently, the stacks were subjected to isothermal annealing treatments at 900 °C for 1 h in high vacuum to induce the diffusion of Cu into the TiN. The performance of the TiN diffusion barrier layers was evaluated by cross-sectional transmission electron microscopy in combination with energy-dispersive X-ray spectrometry mapping and atom probe tomography. No Cu penetration was evident in the single-crystal stack up to annealing temperatures of 900 °C, due to the low density of line and planar defects in single-crystal TiN. However, at higher annealing temperatures when diffusion becomes more prominent, density-functional theory calculations predict a stoichiometry-dependent atomic diffusion mechanism of Cu in bulk TiN, with Cu diffusing on the N sublattice for the experimental N/Ti ratio. In comparison, localized diffusion of Cu along grain boundaries in the columnar polycrystalline TiN barriers was detected after the annealing treatment. The maximum observed diffusion length was approximately 30 nm, yielding a grain boundary diffusion coefficient of the order of 10{sup −16} cm{sup 2} s{sup −1} at 900 °C. This is 10 to 100 times less than for comparable underdense polycrystalline TiN coatings deposited without external substrate heating or bias potential. The combined numerical and experimental approach presented in this paper enables the contrasting juxtaposition of diffusion phenomena and mechanisms in two TiN coatings, which differ from each other only in the presence of grain boundaries.

  3. Free standing TiO2 nanotube array electrodes with an ultra-thin Al2O3 barrier layer and TiCl4 surface modification for highly efficient dye sensitized solar cells.

    PubMed

    Gao, Xianfeng; Guan, Dongsheng; Huo, Jingwan; Chen, Junhong; Yuan, Chris

    2013-11-07

    Dye sensitized solar cells were fabricated with free standing TiO2 nanotube (TNT) array films, which were prepared by template assisted atomic layer deposition (ALD) with precise wall thickness control. Efforts to improve the photovoltaic performance were made by using Al2O3 barrier layer coating in conjunction with TiCl4 surface modification. An Al2O3 thin layer was deposited on the TNT electrode by ALD to serve as the charge recombination barrier, but it suffers from the drawback of decreasing the photoelectron injection from dye into TiO2 when the barrier layer became too thick. With the TiCl4 treatment in combination with optimal thickness coating, this problem could be avoided. The co-surface treated electrode presents superior surface property with low recombination rate and good electron transport property. A high conversion efficiency of 8.62% is obtained, which is about 1.8 times that of the device without surface modifications.

  4. Sorption of Pb(II), Cr(III), Cu(II), As(III) to peat, and utilization of the sorption properties in industrial waste landfill hydraulic barrier layers.

    PubMed

    Koivula, Minna P; Kujala, Kauko; Rönkkömäki, Hannu; Mäkelä, Mauri

    2009-05-15

    The low conductivity landfill barrier layers protect the groundwater and soil by limiting the water flow through the bottom layers of the landfill material. Many materials used in hydraulic barrier layers also have sorption properties which could be used to reduce environmental risks. The adsorption of lead, chromium, copper, and arsenic to peat was studied with a batch-type test and a column test for compacted peat, both without pH adjustment in acidic conditions. Peat adsorbed all the metals well, 40000mg/kg of lead, 13000mg/kg of chromium, and 8400mg/kg of copper in the column test. Arsenic was only tested in a batch-type test, and in that peat adsorbed 60mg/kg of arsenic. The column test showed heavy metals to be adsorbed on the surface layers of the compacted peat sample, on the first centimeter of the sample. The adsorption was much greater in the column test than in the batch-type test, partly due to the different pH conditions and the buffer capacity of the peat in the column test. The liquid/solid ratio of the column experiment represented a time period of approximately 40 years in a landfill, under Finnish climate conditions. The hydraulic conductivity of the peat decreased as it was compressed, but it already met the hydraulic conductivity limits set by European Union legislation for the hydraulic barrier layer (1x10(-9)m/s at a pressure of 150kPa for a 5-m layer), with a pressure of 50kPa. The results show that peat would be an excellent material to construct compacted, low hydraulic conductivity layers with adsorption properties in, e.g. industrial waste landfills.

  5. High f T and f max AlGaN/GaN HFETs achieved by using thin and high-Al-composition AlGaN barrier layers and Cat-CVD SiN passivation

    NASA Astrophysics Data System (ADS)

    Higashiwaki, M.; Onojima, N.; Matsui, T.; Mimura, T.

    2006-05-01

    We fabricated sub-0.1 m-gate Al0.4Ga0.6N/GaN heterostructure field-effect transistors (HFETs) with AlGaN barrier thicknesses of 4-10 nm. The devices were passivated with 2 nm-thick SiN layers formed by catalytic chemical vapor deposition (Cat-CVD). The Cat-CVD SiN passivation greatly increased electron density, and the effect became more significant with decreasing AlGaN barrier thickness. The HFETs had maximum drain current densities of 1.1-1.5 A/mm and peak extrinsic transconductances of 305-438 mS/mm. Peak current-gain cutoff frequency of 163 GHz and maximum oscillation frequency of 192 GHz were obtained for the devices with 8 nm-thick AlGaN barriers.

  6. Two-layer thermal-barrier systems for Ni-Al-Mo alloy and effects of alloy thermal expansion on system life

    NASA Technical Reports Server (NTRS)

    Stecura, S.

    1982-01-01

    Cyclic furnace and cyclic natural gas-oxygen torch rig tests were conducted to (1) identify a thermal-barrier system for a nickel-aluminum-molybdenum alloy, (2) study the oxidation of the bond coating, and (3) study the effect of the substrate coefficient of thermal expansion on thermal barrier system life. It is found that the latter is affected by the composition of the bond coating, yttria concentration in zirconia, and the coefficient of thermal expansion of the substrate material. In addition, small compositional changes in the bond and thermal barrier coatings have greater effect on thermal barrier system life than the 40% increase in the coefficient of thermal expansion of the substrate material. No simple relation exists between the weight gain caused by bond-coating oxidation with increasing yttria concentration in zirconia and increasing bond coating thickness on the one hand, and thermal barrier system life on the other.

  7. Barrier Formation

    PubMed Central

    Lyaruu, D.M.; Medina, J.F.; Sarvide, S.; Bervoets, T.J.M.; Everts, V.; DenBesten, P.; Smith, C.E.; Bronckers, A.L.J.J.

    2014-01-01

    Enamel fluorosis is an irreversible structural enamel defect following exposure to supraoptimal levels of fluoride during amelogenesis. We hypothesized that fluorosis is associated with excess release of protons during formation of hypermineralized lines in the mineralizing enamel matrix. We tested this concept by analyzing fluorotic enamel defects in wild-type mice and mice deficient in anion exchanger-2a,b (Ae2a,b), a transmembrane protein in maturation ameloblasts that exchanges extracellular Cl− for bicarbonate. Defects were more pronounced in fluorotic Ae2a,b−/− mice than in fluorotic heterozygous or wild-type mice. Phenotypes included a hypermineralized surface, extensive subsurface hypomineralization, and multiple hypermineralized lines in deeper enamel. Mineral content decreased in all fluoride-exposed and Ae2a,b−/− mice and was strongly correlated with Cl−. Exposure of enamel surfaces underlying maturation-stage ameloblasts to pH indicator dyes suggested the presence of diffusion barriers in fluorotic enamel. These results support the concept that fluoride stimulates hypermineralization at the mineralization front. This causes increased release of protons, which ameloblasts respond to by secreting more bicarbonates at the expense of Cl− levels in enamel. The fluoride-induced hypermineralized lines may form barriers that impede diffusion of proteins and mineral ions into the subsurface layers, thereby delaying biomineralization and causing retention of enamel matrix proteins. PMID:24170372

  8. Influence of the Thickness of the Barrier Layer in Nanoheterostructures and the Gate-Drain Capacitance on the Microwave and Noise Parameters of Field-Effect AlGaN/GaN HEMT

    NASA Astrophysics Data System (ADS)

    Mikhaylovich, S. V.; Fedorov, Yu. V.

    2016-07-01

    We perform a computational and analytical study of how the thickness of the barrier layer in nanoheterostructures and the gate-drain capacitance C gd influence the microwave parameters (limiting frequency of current amplification and maximum generation frequency) and noise parameters (noise factor) of a field-effect AlGaN/GaN high electron mobility transistor. The results of complex measurements of the parameters of such transistors based on nanoheterostructures with a barrier layer thickness of 3.5-15.7 nm, which were performed within the framework of four technological routes in the range 0.1-67 GHz, are presented. It is shown that in order to reduce the noise ratio and improve the microwave parameters, it is necessary to optimize both the parameters of nanoheterostructures and the manufacturing techniques. In particular, the thickness of the barrier layer should be reduced, and the gate length should be chosen such as to maximize the product of the squared maximum current amplification frequency in the interior of the transistor and the output impedance between the drain and the source. Additionally, attention should be given to the shape of the gate to reduce the capacitance C gd. Under certain conditions of manufacture of nitride field-effect HEMT, one can achieve a lower noise factor compared with the transistors based on arsenide nanoheterostructures.

  9. The origin of low water vapor transmission rates through Al2O3/ZrO2 nanolaminate gas-diffusion barriers grown by atomic layer deposition

    SciTech Connect

    Meyer, Jens; Schmidt, H.; Kowalsky, W.; Riedl, T.; Kahn, Antoine

    2010-01-01

    This paper reports on thin film gas-diffusion barriers consisting of Al2 O3 /ZrO2 nanolaminates (NL) grown by low-temperature (80 °C) atomic layer deposition. We show that reliable barriers with water vapor transmission rates of 3.2×10-4 g/(m2 day) , measured at 80 °C and 80% relative humidity, can be realized with very thin layers down to 40 nm. We determine that ZrO2 acts as anticorrosion element in our NL. Furthermore, we demonstrate by x-ray photoemission spectroscopy that an aluminate phase is formed at the interfaces between Al2 O3 and ZrO2 sublayers, which additionally improves the gas-diffusion barrier due to a densification of the layer system. These Al2 O3 /ZrO2 NLs prepared at low temperatures hold considerable promises for application in organic electronics and beyond.

  10. Excitation and de-excitation mechanisms of Er-doped GaAs and AlGaAs

    NASA Astrophysics Data System (ADS)

    Elsaesser, David W.

    1992-12-01

    Electrical and optical characterization have been performed on GaAs and Al(x)Ga(1-x)As samples doped with Er either by ion implantation or during Molecular Beam Epitaxial (MBE) growth. Deep Level Transient Spectroscopy (DLTS) and Temperature-Dependent Hall Effect (TDH) measurements indicated the presence of two hole traps in Er-doped GaAs, at 35 and 360 meV above the valence band maximum. The former (shallower) center was thought to be due to Er substituting for a Ga atom (ErGa) and giving rise to an isoelectronic impurity potential. The second center was attributed to an Er atom occupying an interstitial position (Er(i)). Annealing studies performed on Er-implanted GaAs indicated that the ErGa center preferentially formed at higher annealing temperatures (greater than 850 C), with the Er(i) reaching a maximum concentration at an annealing temperature of around 750 C. Optical characterization performed by Photoluminescence (PL) measurements showed that the Er(i) center gave a much stronger Er-related intra-4f shell emission. Mechanisms for the excitation of the 4f shells of these two centers are discussed. Similar optically active Eri centers may be forming in AlGaAs.

  11. AlGaAs top solar cell for mechanical attachment in a multi-junction tandem concentrator solar cell stack

    NASA Technical Reports Server (NTRS)

    Dinetta, L. C.; Hannon, M. H.; Cummings, J. R.; Mcneeley, J. B.; Barnett, Allen M.

    1990-01-01

    Free-standing, transparent, tunable bandgap AlxGa1-xAs top solar cells have been fabricated for mechanical attachment in a four terminal tandem stack solar cell. Evaluation of the device results has demonstrated 1.80 eV top solar cells with efficiencies of 18 percent (100 X, and AM0) which would yield stack efficiencies of 31 percent (100 X, AM0) with a silicon bottom cell. When fully developed, the AlxGa1-xAs/Si mechanically-stacked two-junction solar cell concentrator system can provide efficiencies of 36 percent (AM0, 100 X). AlxGa1-xAs top solar cells with bandgaps from 1.66 eV to 2.08 eV have been fabricated. Liquid phase epitaxy (LPE) growth techniques have been used and LPE has been found to yield superior AlxGa1-xAs material when compared to molecular beam epitaxy and metal-organic chemical vapor deposition. It is projected that stack assembly technology will be readily applicable to any mechanically stacked multijunction (MSMJ) system. Development of a wide bandgap top solar cell is the only feasible method for obtaining stack efficiencies greater than 40 percent at AM0. System efficiencies of greater than 40 percent can be realized when the AlGaAs top solar cell is used in a three solar cell mechanical stack.

  12. Internal stress and degradation in short-wavelength AlGaAs double-heterojunction devices

    NASA Technical Reports Server (NTRS)

    Ladany, I.; Furman, T. R.; Marinelli, D. P.

    1979-01-01

    Aging tests of incoherently operated zinc-doped double-heterojunction (DH) lasers designed for short-wavelength (0.71-0.72 micron) operation show that the introduction of buffer layers between the substrate and the DH structure leads to a drastic reduction in gradual degradation. This is attributed to a decrease in lattice mismatch stress.

  13. Plasma enhanced chemical vapor deposition of metalboride interfacial layers as diffusion barriers for nanostructured diamond growth on cobalt containing alloys CoCrMo and WC-Co

    NASA Astrophysics Data System (ADS)

    Johnston, Jamin M.

    This work is a compilation of theory, finite element modeling and experimental research related to the use of microwave plasma enhanced chemical vapor deposition (MPECVD) of diborane to create metal-boride surface coatings on CoCrMo and WC-Co, including the subsequent growth of nanostructured diamond (NSD). Motivation for this research stems from the need for wear resistant coatings on industrial materials, which require improved wear resistance and product lifetime to remain competitive and satisfy growing demand. Nanostructured diamond coatings are a promising solution to material wear but cannot be directly applied to cobalt containing substrates due to graphite nucleation. Unfortunately, conventional pre-treatment methods, such as acid etching, render the substrate too brittle. Thus, the use of boron in a MPECVD process is explored to create robust interlayers which inhibit carbon-cobalt interaction. Furthermore, modeling of the MPECVD process, through the COMSOL MultiphysicsRTM platform, is performed to provide insight into plasma-surface interactions using the simulation of a real-world apparatus. Experimental investigation of MPECVD boriding and NSD deposition was conducted at surface temperatures from 700 to 1100 °C. Several well-adhered metal-boride surface layers were formed: consisting of CoB, CrB, WCoB, CoB and/or W2CoB2. Many of the interlayers were shown to be effective diffusion barriers against elemental cobalt for improving nucleation and adhesion of NSD coatings; diamond on W2CoB2 was well adhered. However, predominantly WCoB and CoB phase interlayers suffered from diamond film delamination. Metal-boride and NSD surfaces were evaluated using glancing-angle x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), cross-sectional scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDS), micro-Raman spectroscopy, nanoindentation, scratch testing and epoxy pull testing. COMSOL MultiphysicsRTM was used to construct a

  14. Schottky barrier solar cell

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.; Yeh, Y. C. M. (Inventor)

    1981-01-01

    A method of fabricating a Schottky barrier solar cell is described. The cell consists of a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive. A thin layer of heavily doped n-type polycrystalling germanium is deposited on the substrate after a passivation layer is deposited to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes to serve as a base layer on which a thin layer of gallium arsenide is vapor-epitaxilly grown followed by a thermally-grown oxide layer. A metal layer is deposited on the oxide layer and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer.

  15. Characteristics of WN{sub x}C{sub y} films deposited using remote plasma atomic layer deposition with ({sup Me}Cp)W(CO){sub 2}(NO) for Cu diffusion barrier

    SciTech Connect

    Kim, Hyunjung; Park, Jingyu; Jeon, Heeyoung; Jang, Woochool; Jeon, Hyeongtag; Yuh, Junhan

    2015-09-15

    Diffusion barrier characteristics of tungsten–nitride–carbide (WN{sub x}C{sub y}) thin films interposed between Cu and SiO{sub 2} layers were studied. The WN{sub x}C{sub y} films were deposited by remote plasma atomic layer deposition (RPALD) using a metal organic source, ({sup Me}Cp)W(CO){sub 2}(NO), and ammonia. Auger electron spectroscopy analysis indicated the WN{sub x}C{sub y} films consisted of tungsten, nitrogen, carbon, and oxygen. X-ray diffraction (XRD) analysis showed that the film deposited at 350 °C was nanocrystalline. The resistivity of WN{sub x}C{sub y} film deposited by RPALD was very low compared to that in previous research because of the lower nitrogen content and different crystal structures of the WN{sub x}C{sub y}. To verify the diffusion barrier characteristics of the WN{sub x}C{sub y} film, Cu films were deposited by physical vapor deposition after WN{sub x}C{sub y} film was formed by RPALD on Si substrate. The Cu/WN{sub x}C{sub y}/Si film stack was annealed in a vacuum by rapid thermal annealing at 500 °C. Cu diffusion through the barrier layer was verified by XRD. Stable film properties were observed up to 500 °C, confirming that WN{sub x}C{sub y} film is suitable as a Cu diffusion barrier in microelectronic circuits.

  16. Catalytic thermal barrier coatings

    DOEpatents

    Kulkarni, Anand A.; Campbell, Christian X.; Subramanian, Ramesh

    2009-06-02

    A catalyst element (30) for high temperature applications such as a gas turbine engine. The catalyst element includes a metal substrate such as a tube (32) having a layer of ceramic thermal barrier coating material (34) disposed on the substrate for thermally insulating the metal substrate from a high temperature fuel/air mixture. The ceramic thermal barrier coating material is formed of a crystal structure populated with base elements but with selected sites of the crystal structure being populated by substitute ions selected to allow the ceramic thermal barrier coating material to catalytically react the fuel-air mixture at a higher rate than would the base compound without the ionic substitutions. Precious metal crystallites may be disposed within the crystal structure to allow the ceramic thermal barrier coating material to catalytically react the fuel-air mixture at a lower light-off temperature than would the ceramic thermal barrier coating material without the precious metal crystallites.

  17. Thermal Barrier Coatings

    NASA Technical Reports Server (NTRS)

    1993-01-01

    In order to reduce heat transfer between a hot gas heat source and a metallic engine component, a thermal insulating layer of material is placed between them. This thermal barrier coating is applied by plasma spray processing the thin films. The coating has been successfully employed in aerospace applications for many years. Lewis Research Center, a leader in the development engine components coating technology, has assisted Caterpillar, Inc. in applying ceramic thermal barrier coatings on engines. Because these large engines use heavy fuels containing vanadium, engine valve life is sharply decreased. The barrier coating controls temperatures, extends valve life and reduces operating cost. Additional applications are currently under development.

  18. Optimization of barrier layer thickness in MgSe/CdSe quantum wells for intersubband devices in the near infrared region

    SciTech Connect

    Chen, Guopeng; Shen, Aidong; Tamargo, Maria C.

    2015-10-28

    The authors report the optimization of MgSe barrier thickness in CdSe/MgSe multiple quantum well structures and its effect on structural, optical qualities and intersubband (ISB) transition characteristics. Three samples with the MgSe thicknesses of 2 nm, 3 nm, and 4 nm were grown on InP substrates by molecular beam epitaxy. X-ray diffraction and photoluminescence measurements showed that the thinner the MgSe barrier thickness the better the structural quality. However, ISB absorption was only observed in the sample with a MgSe thickness of 3 nm. Failing to observe ISB absorption in the sample with a thicker MgSe barrier (≥4 nm) is due to the deteriorated material quality while the missing of ISB transition in the sample with thinner barrier (≤2 nm) is due to the tunneling of electrons out of the CdSe wells. The optimized MgSe barrier thickness of around 3 nm is found to be able to suppress the electron tunneling while maintaining a good material quality of the overall structure.

  19. Quantum-well intermixing for the control of second-order nonlinear effects in AlGaAs multiple-quantum-well waveguides.

    PubMed

    Street, M W; Whitbread, N D; Hutchings, D C; Arnold, J M; Marsh, J H; Aitchison, J S; Kennedy, G T; Sibbett, W

    1997-11-01

    We present experimental evidence to demonstrate the feasibility of a promising new quasi-phase-matching technique in AlGaAs multiple-quantum-well waveguides. Non-phase-matched second-harmonic-generation measurements indicate that, for sub-half-bandgap excitation near 1.5 microm , quantum-well intermixing by impurity-free vacancy disordering results in a reduction of the nonlinear susceptibility chi((2))(zxy) (~340 pm/V) by 17%. Relatively low intermixed waveguide losses, and the high spatial resolution of the impurity-free vacancy disordering process, suggest that periodic intermixing along the direction of propagation should lead to useful frequency-conversion efficiencies.

  20. Thermally stable AuBe-based ohmic contacts to p-type GaP for AlGaInP-based light-emitting diode by using a tungsten barrier layer

    NASA Astrophysics Data System (ADS)

    Kim, Dae-Hyun; Kang, Daesung; Park, Jae-Seong; Seong, Tae-Yeon

    2016-01-01

    We investigated how a tungsten diffusion barrier layer affected the electrical properties of AuBe/Au contacts to a p-GaP window layer (na = 5 × 1019 cm-3) for an AlGaInP-based light emitting diode. All of the as-deposited samples were ohmic. After annealing at 500 °C, the AuBe/Au contacts were electrically degraded with a specific contact resistivity of 1.0 × 10-4 Ωcm2. However, the electrical properties of the W-based contacts were improved, having a contact resistivity of 5.0 × 10-6 Ωcm2. The X-ray photoemission spectroscopy (XPS) results showed that the Ga 2 p core level for the annealed AuBe/Au contacts shifted to the high binding-energy side. On the other hand, that for the AuBe/W/Au contacts shifted toward the lower binding-energy side. For the AuBe/Au contacts, both Be and P atoms were shown to be outdiffused into the metal contact after annealing. However, for the AuBe/W/Au contacts, the outdiffusion of Be atoms was prevented by the W barrier layer, and the Be atoms were indiffused into GaP. Based on the X-ray photoemission spectroscopy (XPS), Auger electron spectroscopy (AES), and electrical results, the annealing-induced electrical degradation and improvement are described and discussed.

  1. A highly selective, chlorofluorocarbon-free GaAs on AlGaAs etch

    SciTech Connect

    Smith, L.E. . Solid State Technology Center)

    1993-07-01

    A highly selective reactive ion etching process using SiCl[sub 4], CF[sub 4], O[sub 2], and He is reported. The selectivity of the etch, which is adjustable, ranges from 308:1 to 428:1 for GaAs to Al[sub 0.11]Ga[sub 0.89]As. This variability in selectivity is achieved by adjusting the helium flow rate. One very attractive feature of this etch is that it uses no chlorofluorocarbons and therefore complies with future bans on these substances imposed at both federal and corporate levels. The etch is demonstrated on a GaAs field effect transistor structure with an underlying Al[sub 0.11]Ga[sub 0.89]As stop-etch layer. The etch can be used for both anisotropic and isotropic applications.

  2. In-situ fabrication of MoSi2/SiC-Mo2C gradient anti-oxidation coating on Mo substrate and the crucial effect of Mo2C barrier layer at high temperature

    NASA Astrophysics Data System (ADS)

    Liu, Jun; Gong, Qianming; Shao, Yang; Zhuang, Daming; Liang, Ji

    2014-07-01

    MoSi2/SiC-Mo2C gradient coating on molybdenum was in situ prepared with pack cementation process by two steps: (1) carburizing with graphite powder to obtain a Mo2C layer on Mo substrate, and (2) siliconizing with Si powder to get a composite MoSi2/SiC layer on the upper part of Mo2C layer. The microstructure and elemental distribution in the coating were investigated with scanning electron microscopy (SEM), back scattered electron (BSE), energy dispersive spectroscopy (EDS), electron probe microanalysis (EPMA) and X-ray diffraction (XRD). Cyclic oxidation tests (at 500 °C, 1200 °C, 1400 °C and 1600 °C) demonstrated excellent oxidation resistance for the gradient composite coating and the mass loss was only 0.23% in 60 min at 1600 °C. XRD, EPMA, thermal dynamic and phase diagram analyses indicated that the Mo2C barrier layer played the key role in slowing down the diffusion of C and Si toward inner Mo substrate at high temperature and principally this contributed to the excellent anti-oxidation for Mo besides the outer MoSi2/SiC composite layer.

  3. Thermal barrier coating

    DOEpatents

    Bowker, Jeffrey Charles; Sabol, Stephen M.; Goedjen, John G.

    2001-01-01

    A thermal barrier coating for hot gas path components of a combustion turbine based on a zirconia-scandia system. A layer of zirconium scandate having the hexagonal Zr.sub.3 Sc.sub.4 O.sub.12 structure is formed directly on a superalloy substrate or on a bond coat formed on the substrate.

  4. AlGaAs 55Fe X-ray radioisotope microbattery

    PubMed Central

    Butera, S.; Whitaker, M. D. C.; Lioliou, G.; Barnett, A. M.

    2016-01-01

    This paper describes the performance of a fabricated prototype Al0.2Ga0.8As 55Fe radioisotope microbattery photovoltaic cells over the temperature range −20 °C to 50 °C. Two 400 μm diameter p+-i-n+ (3 μm i-layer) Al0.2Ga0.8As mesa photodiodes were used as conversion devices in a novel X-ray microbattery prototype. The changes of the key microbattery parameters were analysed in response to temperature: the open circuit voltage, the maximum output power and the internal conversion efficiency decreased when the temperature was increased. At −20 °C, an open circuit voltage and a maximum output power of 0.2 V and 0.04 pW, respectively, were measured per photodiode. The best internal conversion efficiency achieved for the fabricated prototype was only 0.95% at −20 °C. PMID:27922093

  5. AlGaAs 55Fe X-ray radioisotope microbattery

    NASA Astrophysics Data System (ADS)

    Butera, S.; Whitaker, M. D. C.; Lioliou, G.; Barnett, A. M.

    2016-12-01

    This paper describes the performance of a fabricated prototype Al0.2Ga0.8As 55Fe radioisotope microbattery photovoltaic cells over the temperature range ‑20 °C to 50 °C. Two 400 μm diameter p+-i-n+ (3 μm i-layer) Al0.2Ga0.8As mesa photodiodes were used as conversion devices in a novel X-ray microbattery prototype. The changes of the key microbattery parameters were analysed in response to temperature: the open circuit voltage, the maximum output power and the internal conversion efficiency decreased when the temperature was increased. At ‑20 °C, an open circuit voltage and a maximum output power of 0.2 V and 0.04 pW, respectively, were measured per photodiode. The best internal conversion efficiency achieved for the fabricated prototype was only 0.95% at ‑20 °C.

  6. Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier

    NASA Astrophysics Data System (ADS)

    Jia, Chuanyu; Yu, Tongjun; Feng, Xiaohui; Wang, Kun; Zhang, Guoyi

    2016-09-01

    The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL.

  7. Improving the electrical properties of lanthanum silicate films on ge metal oxide semiconductor capacitors by adopting interfacial barrier and capping layers.

    PubMed

    Choi, Yu Jin; Lim, Hajin; Lee, Suhyeong; Suh, Sungin; Kim, Joon Rae; Jung, Hyung-Suk; Park, Sanghyun; Lee, Jong Ho; Kim, Seong Gyeong; Hwang, Cheol Seong; Kim, HyeongJoon

    2014-05-28

    The electrical properties of La-silicate films grown by atomic layer deposition (ALD) on Ge substrates with different film configurations, such as various Si concentrations, Al2O3 interfacial passivation layers, and SiO2 capping layers, were examined. La-silicate thin films were deposited using alternating injections of the La[N{Si(CH3)3}2]3 precursor with O3 as the La and O precursors, respectively, at a substrate temperature of 310 °C. The Si concentration in the La-silicate films was further controlled by adding ALD cycles of SiO2. For comparison, La2O3 films were also grown using [La((i)PrCp)3] and O3 as the La precursor and oxygen source, respectively, at the identical substrate temperature. The capacitance-voltage (C-V) hysteresis decreased with an increasing Si concentration in the La-silicate films, although the films showed a slight increase in the capacitance equivalent oxide thickness. The adoption of Al2O3 at the interface as a passivation layer resulted in lower C-V hysteresis and a low leakage current density. The C-V hysteresis voltages of the La-silicate films with Al2O3 passivation and SiO2 capping layers was significantly decreased to ∼0.1 V, whereas the single layer La-silicate film showed a hysteresis voltage as large as ∼1.0 V.

  8. Y0.08Sr0.88TiO3-CeO2 composite as a diffusion barrier layer for stainless-steel supported solid oxide fuel cell

    NASA Astrophysics Data System (ADS)

    Kim, Kun Joong; Kim, Sun Jae; Choi, Gyeong Man

    2016-03-01

    A new diffusion barrier layer (DBL) is proposed for solid oxide fuel cells (SOFCs) supported on stainless-steel where DBL prevents inter-diffusion of atoms between anode and stainless steel (STS) support during fabrication and operation of STS-supported SOFCs. Half cells consisting of dense yttria-stabilized zirconia (YSZ) electrolyte, porous Ni-YSZ anode layer, and ferritic STS support, with or without Y0.08Sr0.88TiO3-CeO2 (YST-CeO2) composite DBL, are prepared by tape casting and co-firing at 1250 and 1350 °C, respectively, in reducing (H2) atmosphere. The porous YST-CeO2 layer (t ∼ 60 μm) blocks inter-diffusion of Fe and Ni, and captures the evaporated Cr during cell fabrication (1350 °C). The cell with DBL and La0.6Sr0.4Co0.2Fe0.8O3-δ (LSCF) cathode achieved a maximum power density of ∼220 mW cm-2 which is stable at 700 °C. In order to further improve the power performance, Ni coarsening in anode during co-firing must be prevented or alternative anode which is resistive to coarsening is suggested. This study demonstrates that the new YST-CeO2 layer is a promising as a DBL for stainless-steel-supported SOFCs fabricated with co-firing process.

  9. Vehicle barrier

    DOEpatents

    Hirsh, Robert A.

    1991-01-01

    A vehicle security barrier which can be conveniently placed across a gate opening as well as readily removed from the gate opening to allow for easy passage. The security barrier includes a barrier gate in the form of a cable/gate member in combination with laterally attached pipe sections fixed by way of the cable to the gate member and lateral, security fixed vertical pipe posts. The security barrier of the present invention provides for the use of cable restraints across gate openings to provide necessary security while at the same time allowing for quick opening and closing of the gate areas without compromising security.

  10. Corrosion-resistant ceramic thermal barrier coating

    NASA Technical Reports Server (NTRS)

    Hodge, P. E.; Levine, S. R.; Miller, R. A.

    1980-01-01

    Two-layer thermal barrier coating, consisting of metal-CrA1Y bond coating and calcium silicate ceramic outer layer, greatly improves resistance of turbine parts to hot corrosion from fuel and air impurities. Both layers can be plasma sprayed, and ceramic layer may be polished to reduce frictional losses. Ceramic provides thermal barrier, so parts operate cooler metal temperatures, coolant flow can be reduced, or gas temperatures increased. Lower grade fuels also can be used.

  11. Hydrogen-isotope permeation barrier

    DOEpatents

    Maroni, Victor A.; Van Deventer, Erven H.

    1977-01-01

    A composite including a plurality of metal layers has a Cu-Al-Fe bronze layer and at least one outer layer of a heat and corrosion resistant metal alloy. The bronze layer is ordinarily intermediate two outer layers of metal such as austenitic stainless steel, nickel alloys or alloys of the refractory metals. The composite provides a barrier to hydrogen isotopes, particularly tritium that can reduce permeation by at least about 30 fold and possibly more below permeation through equal thicknesses of the outer layer material.

  12. Current-Induced Magnetization Switching in MgO Barrier Based Magnetic Tunnel Junctions with CoFeB/Ru/CoFeB Synthetic Ferrimagnetic Free Layer

    NASA Astrophysics Data System (ADS)

    Hayakawa, Jun; Ikeda, Shoji; Lee, Young Min; Sasaki, Ryutaro; Meguro, Toshiyasu; Matsukura, Fumihiro; Takahashi, Hiromasa; Ohno, Hideo

    2006-10-01

    We report the intrinsic critical current density (Jc0) in current-induced magnetization switching and the thermal stability factor (E/kBT, where E, kB, and T are the energy potential, the Boltzmann constant, and temperature, respectively) in MgO based magnetic tunnel junctions with a Co40Fe40B20(2 nm)/Ru(0.7-2.4 nm)/Co40Fe40B20(2 nm) synthetic ferrimagnetic (SyF) free layer. We show that Jc0 and E/kBT can be determined by analyzing the average critical current density as a function of coercivity using the Slonczewski’s model taking into account thermal fluctuation. We find that high antiferromagnetic coupling between the two CoFeB layers in a SyF free layer results in reduced Jc0 without reducing high E/kBT.

  13. In situ metalorganic growth control of GaAlAs thick layers using 1.32 μm laser reflectometry

    NASA Astrophysics Data System (ADS)

    Kuszelewicz, R.; Rafflé, Y.; Azoulay, R.; Dugrand, L.; Le Roux, G.

    1995-02-01

    We report on the use of in situ reflectometry using 1.32 μm laser light to monitor the metalorganic growth of thick GaAlAs layers. With respect to the particular growth conditions, the calibration of effective indices was carried out for bulk as well as multi quantum well layers. This allowed in situ measurements of large thickness layers, Al concentration determination of AlGaAS layers, and metal-semiconductor-field effect transistor (MESFET) structure monitoring with highly improved precision and reproducibility.

  14. Anisotropic capillary barrier for waste site surface covers

    DOEpatents

    Stormont, J.C.

    1996-08-27

    Waste sites are capped or covered upon closure. The cover structure incorporates a number of different layers each having a contributory function. One such layer is the barrier layer. Traditionally the barriers have been compacted soil and geosynthetics. These types of barriers have not been successfully implemented in unsaturated ground conditions like those found in dry climates. Capillary barriers have been proposed as barrier layers in dry environments, but the divergence length of these barriers has been found to be inadequate. An alternative to the capillary barrier is a anisotropic capillary barrier. An anisotropic capillary barrier has an increased divergence length which results in more water being diverted laterally preventing the majority of water from percolating in a downward direction through the barrier. 10 figs.

  15. Fabrication of double barrier structures in single layer c-Si-QDs/a-SiOx films for realization of energy selective contacts for hot carrier solar cells

    NASA Astrophysics Data System (ADS)

    Kar, Debjit; Das, Debajyoti

    2017-01-01

    Thin films of c-Si-QDs embedded in an a-SiOx dielectric matrix forming arrays of double barrier structures have been fabricated by reactive rf-magnetron sputtering at ˜400 °C, without post-deposition annealing. The formation of larger size c-Si-QDs of reduced number density in homogeneous distribution within a less oxygenated a-SiOx matrix at higher plasma pressure introduces systematic widening of the average periodic distance between the adjacent `c-Si-QDs in a-SiOx', as obtained by X-ray reflectivity and transmission electron microscopy studies. A wave-like pattern in the J-E characteristics identifies the formation of periodic double-barrier structures along the path of the movement of charge carriers across the QDs and that those are originated by the a-SiOx dielectric matrix around the c-Si-QDs. A finite distribution of the size of c-Si-QDs introduces a broadening of the current density peak and simultaneously originates the negative differential resistance-like characteristics, which have suitable applications in the energy selective contacts that act as energy filters for hot carrier solar cells. A simple yet effective process technology has been demonstrated. Further initiative on tuning the energy selectivity by reducing the size and narrowing the size-distribution of Si-QDs can emerge superior energy selective contacts for hot carrier solar cells, paving ground for accomplishing all-Si solar cells.

  16. Analysis of an m = 1 electrostatic barrier scrape-off layer as a technique for reducing and controlling the particle and energy losses on the large major radius edge of tokamak

    SciTech Connect

    LaBombard, B.; Conn, R.W.

    1988-12-01

    It is observed in many tokamaks that particle and heat fluxes from the core region are poloidally asymmetric, favoring higher cross field transport on the large major radius edge of the torus. We propose a novel technique that may allow one to control this asymmetric flux into the tokamak boundary plasma. The scheme principally involves the formation of a mobility limited transport layer or 'electrostatic barrier' to inhibit the flow of plasma into the boundary layer at large major radii, forcing plasma to exit on the small major radius side of the torus instead. At the same time, the technique produces an 'ExB divertor' effect, efficiently exhausting plasma and impurities within the boundary layer. The implications of such a scheme are potentially important. By forcing plasma to exit on the inside half of the torus where the intrinsic cross-field transport is lower, the overall confinement characteristics of the central plasma may be improved. Furthermore, scrape-off plasma fluxes, subsequent recycling conditions, and their asymmetries at limiter, divertor, and wall structures can be actively controlled. An important feature of the technique is that it may be employed in both limiter and divertor configurations. The first-order response of the scrape-off layer plasma to the applied bias is estimated in this report using a simple two fluid transport model which includes cross-field diffusion and mobility. It is shown that the influence of an applied bias on the scrape-of layer density e-folding length depends only on the relative magnitudes of cross-field ion and electron mobilities. 17 refs., 6 figs.

  17. High Brightness Fluorescent White Polymer Light-Emitting Diodes by Promoted Hole Injection via Reduced Barrier by Interfacial Dipole Imparted from Chlorinated Indium Tin Oxide to the Hole Injection Layer PEDOT:PSS.

    PubMed

    Syue, Hong-Ren; Hung, Miao-Ken; Chang, Yao-Tang; Lin, Ge-Wei; Lee, Yu-Hsuan; Chen, Show-An

    2017-02-01

    We demonstrated that introducing poly(3,4-ethylenedioxythiophene) polystyrene sulfonate as a hole transport layer (HTL) on top of chlorinated indium tin oxide (Cl-ITO) anode can lead to a deeper highest occupied molecular orbital level of the HTL (promoting from 5.22 to 5.42 eV) due to the interfacial dipole imparted by the Cl-ITO, which allows barrier-free hole injection to the emitting layer with polyspirobifluorene doped with the yellow emitter rubrene and significantly prevents excitons quenching by residual chlorine radicals on the surface of Cl-ITO. By use of poly[9,9-bis(6'-(18-crown-6)methoxy)hexyl)fluorene] chelating to potassium ion (PFCn6:K(+)) as electron injection layer and air-stable high work function (EΦ) metal aluminum as the cathode, the performance of fluorescent white polymer light-emitting diode (WPLED) achieves the high maximum brightness (Bmax) of 61 523 cd/m(2) and maximum luminance efficiency (ηL, max) of 10.3 cd/A. Replacing PFCn6:K(+)/Al cathode by CsF/Al, the Bmax and ηL, max are promoted to 87 615 cd/m(2) (the record value in WPLED) and 11.1 cd/A, respectively.

  18. Intragranular cracking as a critical barrier for high-voltage usage of layer-structured cathode for lithium-ion batteries

    DOE PAGES

    Yan, Pengfei; Zheng, Jianming; Gu, Meng; ...

    2017-01-16

    LiNi1/3Mn1/3Co1/3O2 (NMC333) layered cathode is often fabricated as secondary particles of consisting of densely packed primary particles, which offers advantage of high energy density and alleviation of cathode side reactions/corrosions, but introduces other drawbacks, such as intergranular cracking. Here, we report unexpected observations on the nucleation and growth of intragranular cracks in the commercial NMC333 layered cathode by using advanced S/TEM. We found that the formation of the intragranular cracks is directly associated with high voltage cycling, which is an electrochemically driven and diffusion controlled process. The intragranular cracks were noticed to be characteristically initiated from grain interior, a consequencemore » of dislocation based crack incubation mechanism. This observation is in sharp contrast with the general theoretical models, predicting the initiation of intragranular cracks from grain boundaries or particle surface. As a result, our study indicates that maintain a structural stability is the key step toward high voltage operation of layered cathode materials.« less

  19. Tuning the g-factor of neutral and charged excitons confined to self-assembled (Al,Ga)As shell quantum dots

    SciTech Connect

    Corfdir, P. Van Hattem, B.; Phillips, R. T.; Fontana, Y.; Russo-Averchi, E.; Heiss, M.; Fontcuberta i Morral, A.

    2014-12-01

    We study the neutral exciton (X) and charged exciton (CX) transitions from (Al,Ga)As shell quantum dots located in core-shell nanowires, in the presence of a magnetic field. The g-factors and the diamagnetic coefficients of both the X and the CX depend on the orientation of the field with respect to the nanowire axis. The aspect ratio of the X wavefunction is quantified based on the anisotropy of the diamagnetic coefficient. For specific orientations of the magnetic field, it is possible to cancel the g-factor of the bright states of the X and the CX by means of an inversion of the sign of the hole's g-factor, which is promising for quantum information processing applications.

  20. Factors influencing doping control and abrupt metallurgical transitions during atmospheric pressure MOVPE growth of AlGaAs and GaAs

    NASA Astrophysics Data System (ADS)

    Roberts, J. S.; Mason, N. J.; Robinson, M.

    1984-09-01

    Atmospheric pressure MOVPE of GaAs and AlGaAs has been investigated using two gas handling systems and a conventional horizontal reactor. Initially a simple source/carrier gas manifold design was assessed but severe retention of reagents in the pipework resulted in poor control of doping and interface abruptness. However, integration of the reagent and carrier gas in a pressure balanced vent/run configuration gave a significant improvement. AlGaAs/GaAs multilayers and n +/n - GaAs transitions have been used to assess the performance of both systems. Abrupt p-type doping transitions using bis-cyclopentadienylmagnesium proved unsuccessful as long doping tails were observed.

  1. GaN barrier layer dependence of critical thickness in GaInN/GaN superlattice on GaN characterized by in situ X-ray diffraction

    NASA Astrophysics Data System (ADS)

    Osumi, Junya; Ishihara, Koji; Yamamoto, Taiji; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu

    2016-05-01

    We investigated the critical thickness dependence on the GaN barrier layer thickness in a GaInN/GaN superlattice (SL). The characterization was done by combining an in situ X-ray diffraction (XRD) system attached to a metalorganic vapor phase epitaxy rector and ex situ analyses such as scanning electron microscopy and transmission electron microscopy. The critical thickness required for the introduction of a + c-type misfit dislocations (MDs) in the GaInN/GaN SL was determined by analyzing the full width at half maximum of the in situ XRD spectrum from a GaInN/GaN SL as a function of SL periods, and we successfully found the critical thicknesses of specific different SLs.

  2. Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Fu, Yi-Keng; Lu, Yu-Hsuan; Jiang, Ren-Hao; Chen, Bo-Chun; Fang, Yen-Hsiang; Xuan, Rong; Su, Yan-Kuin; Lin, Chia-Feng; Chen, Jebb-Fang

    2011-08-01

    Near ultraviolet light-emitting diodes (LEDs) with quaternary AlInGaN quantum barriers (QBs) are grown by atmospheric pressure metalorganic vapor phase epitaxy. The indium mole fraction of AlInGaN QB could be enhanced as we increased the TMG flow rate. Both the wavelength shift in EL spectra and forward voltage at 20 mA current injection were reduced by using AlInGaN QB. Under 100 mA current injection, the LED output power with Al 0.089In 0.035Ga 0.876N QB can be enhanced by 15.9%, compared to LED with GaN QB. It should be attributed to a reduction of lattice mismatch induced polarization mismatch in the active layer.

  3. Control of an interfacial MoSe2 layer in Cu2ZnSnSe4 thin film solar cells: 8.9% power conversion efficiency with a TiN diffusion barrier

    NASA Astrophysics Data System (ADS)

    Shin, Byungha; Zhu, Yu; Bojarczuk, Nestor A.; Jay Chey, S.; Guha, Supratik

    2012-07-01

    We have examined Cu2ZnSnSe4 (CZTSe) solar cells prepared by thermal co-evaporation on Mo-coated glass substrates followed by post-deposition annealing under Se ambient. We show that the control of an interfacial MoSe2 layer thickness and the introduction of an adequate Se partial pressure (PSe) during annealing are essential to achieve high efficiency CZTSe solar cells—a reverse correlation between device performance and MoSe2 thickness is observed, and insufficient PSe leads to the formation of defects within the bandgap as revealed by photoluminescence measurements. Using a TiN diffusion barrier, we demonstrate 8.9% efficiency CZTSe devices with a long lifetime of photo-generated carriers.

  4. Highly reliable Ti-based ohmic contact to N-polar n-type GaN for vertical-geometry light-emitting diodes by using a Ta barrier layer.

    PubMed

    Park, Jae-Seong; Han, Jaecheon; Seong, Tae-Yeon

    2014-05-05

    The formation of thermally stable and low resistance Ti/Al-based ohmic contacts to N-polar n-GaN for high-power vertical light-emitting diodes (VLEDs) using a Ta diffusion barrier is presented. Before annealing, both Ti/Al/Au and Ti/Ta/Al/Au contacts reveal ohmic behavior with specific contact resistances of 2.4 × 10⁻⁴ and 1.2 × 10⁻⁴ Ωcm², respectively. However, unlike the Ti/Al/Au samples that are electrically degraded with increasing annealing time at 250 °C, the Ti/Ta/Al/Au samples remain thermally stable even after annealing for 600 min. LEDs fabricated with the Ti/Ta/Al/Au contacts yield 8.3% higher output power (at 300 mA) than LEDs with the Ti/Al/Au contact. X-ray photoemission spectroscopy results show that the Ta layer serves as an efficient barrier to the indiffusion of oxygen toward the GaN. On the basis of the XPS and electrical results, the annealing dependence of the electrical characteristics of Ti/Al-based contacts are described and discussed.

  5. Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Fryauf, David M.; Phillips, Andrew C.; Kobayashi, Nobuhiko P.

    2013-09-01

    An urgent demand remains in astronomy for high-reflectivity silver mirrors that can withstand years of exposure in observatory environments. The University of California Observatories Astronomical Coatings Lab has undertaken development of protected silver coatings suitable for telescope mirrors that maintain high reflectivity at wavelengths from 340 nm through the mid-infrared spectrum. We present initial results of an investigation into whether plasma-enhanced atomic layer deposition (PEALD) can produce superior protective layers of transparent dielectrics. Several novel coating recipes have been developed with ion-assisted electron beam deposition (IAEBD) of materials including yttrium fluoride, and oxides of yttrium, hafnium, and titanium. Samples of these mirror coatings were covered with conformal layers of aluminum oxide (AlOx) deposited by PEALD using trimethylaluminum as a metal precursor and oxygen as an oxidant gas activated by remote plasma. Samples of coating recipes with and without PEALD oxide undergo aggressive environmental testing, including high temperature/high humidity (HTHH), in which samples were exposed to an environment of 80% humidity at 80°C for ten days in a simple test set-up. HTHH testing show visible results suggesting that the PEALD oxide offers enhanced robust protection against chemical corrosion and moisture from an accelerated aging environment. Mirror samples are further characterized by reflectivity/absorption and atomic force microscopy before and after deposition of oxide coatings. AlOx is suitable for many applications and has been the initial material choice for this study, although we also tried TiOx and HfOx. Further experimentation based on these initial results is on-going.

  6. Micro heat barrier

    DOEpatents

    Marshall, Albert C.; Kravitz, Stanley H.; Tigges, Chris P.; Vawter, Gregory A.

    2003-08-12

    A highly effective, micron-scale micro heat barrier structure and process for manufacturing a micro heat barrier based on semiconductor and/or MEMS fabrication techniques. The micro heat barrier has an array of non-metallic, freestanding microsupports with a height less than 100 microns, attached to a substrate. An infrared reflective membrane (e.g., 1 micron gold) can be supported by the array of microsupports to provide radiation shielding. The micro heat barrier can be evacuated to eliminate gas phase heat conduction and convection. Semi-isotropic, reactive ion plasma etching can be used to create a microspike having a cusp-like shape with a sharp, pointed tip (<0.1 micron), to minimize the tip's contact area. A heat source can be placed directly on the microspikes. The micro heat barrier can have an apparent thermal conductivity in the range of 10.sup.-6 to 10.sup.-7 W/m-K. Multiple layers of reflective membranes can be used to increase thermal resistance.

  7. Intragranular cracking as a critical barrier for high-voltage usage of layer-structured cathode for lithium-ion batteries

    NASA Astrophysics Data System (ADS)

    Yan, Pengfei; Zheng, Jianming; Gu, Meng; Xiao, Jie; Zhang, Ji-Guang; Wang, Chong-Min

    2017-01-01

    LiNi1/3Mn1/3Co1/3O2-layered cathode is often fabricated in the form of secondary particles, consisting of densely packed primary particles. This offers advantages for high energy density and alleviation of cathode side reactions/corrosions, but introduces drawbacks such as intergranular cracking. Here, we report unexpected observations on the nucleation and growth of intragranular cracks in a commercial LiNi1/3Mn1/3Co1/3O2 cathode by using advanced scanning transmission electron microscopy. We find the formation of the intragranular cracks is directly associated with high-voltage cycling, an electrochemically driven and diffusion-controlled process. The intragranular cracks are noticed to be characteristically initiated from the grain interior, a consequence of a dislocation-based crack incubation mechanism. This observation is in sharp contrast with general theoretical models, predicting the initiation of intragranular cracks from grain boundaries or particle surfaces. Our study emphasizes that maintaining structural stability is the key step towards high-voltage operation of layered-cathode materials.

  8. Intragranular cracking as a critical barrier for high-voltage usage of layer-structured cathode for lithium-ion batteries

    PubMed Central

    Yan, Pengfei; Zheng, Jianming; Gu, Meng; Xiao, Jie; Zhang, Ji-Guang; Wang, Chong-Min

    2017-01-01

    LiNi1/3Mn1/3Co1/3O2-layered cathode is often fabricated in the form of secondary particles, consisting of densely packed primary particles. This offers advantages for high energy density and alleviation of cathode side reactions/corrosions, but introduces drawbacks such as intergranular cracking. Here, we report unexpected observations on the nucleation and growth of intragranular cracks in a commercial LiNi1/3Mn1/3Co1/3O2 cathode by using advanced scanning transmission electron microscopy. We find the formation of the intragranular cracks is directly associated with high-voltage cycling, an electrochemically driven and diffusion-controlled process. The intragranular cracks are noticed to be characteristically initiated from the grain interior, a consequence of a dislocation-based crack incubation mechanism. This observation is in sharp contrast with general theoretical models, predicting the initiation of intragranular cracks from grain boundaries or particle surfaces. Our study emphasizes that maintaining structural stability is the key step towards high-voltage operation of layered-cathode materials. PMID:28091602

  9. Environmental barrier material for organic light emitting device and method of making

    DOEpatents

    Graff, Gordon L [West Richland, WA; Gross, Mark E [Pasco, WA; Affinito, John D [Kennewick, WA; Shi, Ming-Kun [Richland, WA; Hall, Michael [West Richland, WA; Mast, Eric [Richland, WA

    2003-02-18

    An encapsulated organic light emitting device. The device includes a first barrier stack comprising at least one first barrier layer and at least one first polymer layer. There is an organic light emitting layer stack adjacent to the first barrier stack. A second barrier stack is adjacent to the organic light emitting layer stack. The second barrier stack has at least one second barrier layer and at least one second polymer layer. A method of making the encapsulated organic light emitting device is also provided.

  10. Deep ultraviolet photodetectors based on p-Si/ i-SiC/ n-Ga2O3 heterojunction by inserting thin SiC barrier layer

    NASA Astrophysics Data System (ADS)

    An, Yuehua; Zhi, Yusong; Wu, Zhenping; Cui, Wei; Zhao, Xiaolong; Guo, Daoyou; Li, Peigang; Tang, Weihua

    2016-12-01

    Deep ultraviolet photodetectors based on p-Si/ n-Ga2O3 and p-Si/ i-SiC/ n-Ga2O3 heterojunctions were fabricated by laser molecular beam epitaxial (L-MBE), respectively. In compare with p-Si/ n-Ga2O3 heterostructure-based photodetector, the dark current of p-Si/ i-SiC/ n-Ga2O3-based photodetector decreased by three orders of magnitude, and the rectifying behavior was tuned from reverse to forward. In order to improve the quality of the photodetector, we reduced the oxygen vacancies of p-Si/ i-SiC/ n-Ga2O3 heterostructures by changing the oxygen pressure during annealing. As a result, the rectification ratio ( I F/ I R) of the fabricated photodetectors was 36 at 4.5 V and the photosensitivity was 5.4 × 105% under the 254 nm light illumination at -4.5 V. The energy band structure of p-Si/ n-Ga2O3 and p-Si/ i-SiC/ n-Ga2O3 heterostructures was schematic drawn to explain the physic mechanism of enhancement of the performance of p-Si/ i-SiC/ n-Ga2O3 heterostructure-based deep UV photodetector by introduction of SiC layer.

  11. Cuprous selenide and sulfide form improved photovoltaic barriers

    NASA Technical Reports Server (NTRS)

    1966-01-01

    Photovoltaic barriers formed by depositing a layer of polycrystalline cuprous sulfide or cuprous selenide on gallium arsenide are chemically and electrically stable. The stability of these barrier materials is significantly greater than that of cuprous iodide.

  12. Barrier infrared detector

    NASA Technical Reports Server (NTRS)

    Ting, David Z. (Inventor); Khoshakhlagh, Arezou (Inventor); Soibel, Alexander (Inventor); Hill, Cory J. (Inventor); Gunapala, Sarath D. (Inventor)

    2012-01-01

    A superlattice-based infrared absorber and the matching electron-blocking and hole-blocking unipolar barriers, absorbers and barriers with graded band gaps, high-performance infrared detectors, and methods of manufacturing such devices are provided herein. The infrared absorber material is made from a superlattice (periodic structure) where each period consists of two or more layers of InAs, InSb, InSbAs, or InGaAs. The layer widths and alloy compositions are chosen to yield the desired energy band gap, absorption strength, and strain balance for the particular application. Furthermore, the periodicity of the superlattice can be "chirped" (varied) to create a material with a graded or varying energy band gap. The superlattice based barrier infrared detectors described and demonstrated herein have spectral ranges covering the entire 3-5 micron atmospheric transmission window, excellent dark current characteristics operating at least 150K, high yield, and have the potential for high-operability, high-uniformity focal plane arrays.

  13. Language barriers

    PubMed Central

    Ngwakongnwi, Emmanuel; Hemmelgarn, Brenda R.; Musto, Richard; King-Shier, Kathryn M.; Quan, Hude

    2012-01-01

    Abstract Objective To assess use of regular medical doctors (RMDs), as well as awareness and use of telephone health lines or telehealth services, by official language minorities (OLMs) in Canada. Design Analysis of data from the 2006 postcensal survey on the vitality of OLMs. Setting Canada. Participants In total, 7691 English speakers in Quebec and 12 376 French speakers outside Quebec, grouped into those who experienced language barriers and those with no language barriers. Main outcome measures Health services utilization (HSU) by the presence of language barriers; HSU measures included having an RMD, use of an RMD’s services, and awareness of and use of telephone health lines or telehealth services. Multivariable models examined the associations between HSU and language barriers. Results After adjusting for age and sex, English speakers residing in Quebec with limited proficiency in French were less likely to have RMDs (adjusted odds ratio [AOR] 0.66, 95% CI 0.50 to 0.87) and to use the services of their RMDs (AOR 0.65, 95% CI 0.50 to 0.86), but were more likely to be aware of the existence of (AOR 1.50, 95% CI 1.16 to 1.93) and to use (AOR 1.43, 95% CI 0.97 to 2.11) telephone health lines or telehealth services. This pattern of having and using RMDs and telehealth services was not observed for French speakers residing outside of Quebec. Conclusion Overall we found variation in HSU among the language barrier populations, with lower use observed in Quebec. Age older than 45 years, male sex, being married or in common-law relationships, and higher income were associated with having RMDs for OLMs. PMID:23242902

  14. Complementary Barrier Infrared Detector (CBIRD) Contact Methods

    NASA Technical Reports Server (NTRS)

    Ting, David Z.; Hill, Cory J.; Gunapala, Sarath D.

    2013-01-01

    The performance of the CBIRD detector is enhanced by using new device contacting methods that have been developed. The detector structure features a narrow gap adsorber sandwiched between a pair of complementary, unipolar barriers that are, in turn, surrounded by contact layers. In this innovation, the contact adjacent to the hole barrier is doped n-type, while the contact adjacent to the electron barrier is doped p-type. The contact layers can have wider bandgaps than the adsorber layer, so long as good electrical contacts are made to them. If good electrical contacts are made to either (or both) of the barriers, then one could contact the barrier(s) directly, obviating the need for additional contact layers. Both the left and right contacts can be doped either n-type or ptype. Having an n-type contact layer next to the electron barrier creates a second p-n junction (the first being the one between the hole barrier and the adsorber) over which applied bias could drop. This reduces the voltage drop over the adsorber, thereby reducing dark current generation in the adsorber region.

  15. Amosphous diffusion barriers

    NASA Technical Reports Server (NTRS)

    Kolawa, E.; So, F. C. T.; Nicolet, M-A.

    1986-01-01

    Amorphous W-Zr and W-N alloys were investigated as diffusion barriers in silicon metallization schemes. Data were presented showing that amorphous W-Zr crystallizes at 900 C, which is 200 C higher than amorphous W-Ni films, and that both films react with metallic overlayers at temperatures far below the crystllization temperature. Also, W-N alloys (crystalline temperature of 600 C) were successfully incorporated as a diffusion barrier in contact structures with both Al and Ag overlayers. The thermal stability of the electrical characteristics of shallow n(+)p junctions significantly improved by incorporating W-N layers in the contact system. One important fact demonstated was the critical influence of the deposition parameters during formation of these carriers.

  16. Dry etching of Al-rich AlGaAs with silicon nitride masks for photonic crystal fabrication

    NASA Astrophysics Data System (ADS)

    Zhang, Xiuyu; Togano, Yuji; Hashimura, Kentaro; Morifuji, Masato; Kondow, Masahiko

    2015-04-01

    We investigate inductively coupled plasma (ICP) deep dry etching of Al0.8Ga0.2As for photonic crystal (PC) fabrication using a Cl2/BCl3/CH4 gas mixture. On the basis of our previous report [Y. Kitabayashi et al., Jpn. J. Appl. Phys. 52, 04CG07 (2013)], we obtained a PC structure having air holes deeper than 1.5 µm and a diameter of 120 nm by adjusting the gas flow rate and increasing the process pressure. In this study, silicon nitride (SiNx) and SiO2 were both used as the mask layer. Furthermore, samples with SiNx and SiO2 masks for ICP deep dry etching were also fabricated and compared. The vertical profile of the PC structure with the SiNx mask layer displayed a rounded shape that was caused by the charge up in the mask layer. Then, a thinner mask layer was used to ease the effects of mask retardation and charge up. As a result, a PC structure with a SiNx mask layer having air holes deeper than 1.7 µm and a diameter of 190 nm was successfully fabricated.

  17. Performance of antireflecting coating-AlGaAs window layer coupling for terrestrial concentrator GaAs solar cells

    SciTech Connect

    Valle, C.A. del; Alcaraz, M.F.

    1997-09-01

    In this paper, the authors present the performance of optical coating systems coupled with AlGaAs window layers over GaAs solar cells. Single, double, and triple antireflecting coatings and window layers with constant and graded aluminum content are considered. Comparison between constant and graded window layers is established. To better represent reality, practical factors such as absorption of materials even for antireflecting coatings and the oxidation at window layer surface due to its high aluminum content are also included in the calculations. The design criteria to determine the optimum thickness of each layer is the achievement of maximum photogenerated current density. For this purpose and to account for terrestrial concentrators GaAs solar cells, the inclusion of direct terrestrial solar spectrum together with the internal spectral response of the device are taken into account. Finally, the best antireflecting coating/AlGaAs window layer couplings for different cases are presented.

  18. Hanford Protective Barriers Program asphalt barrier studies -- FY 1988

    SciTech Connect

    Freeman, H.D.; Gee, G.W.

    1989-05-01

    The Hanford Protective Barrier (HPB) Program is evaluating alternative barriers to provide a means of meeting stringent water infiltration requirements. One type of alternative barrier being considered is an asphalt-based layer, 1.3 to 15 cm thick, which has been shown to be very effective as a barrier for radon gas and, hence, should be equally effective as a barrier for the larger molecules of water. Fiscal Year 1988 studies focused on the selection and formulation of the most promising asphalt materials for further testing in small-tube lysimeters. Results of laboratory-scale formulation and hydraulic conductivity tests led to the selection of a rubberized asphalt material and an admixture of 24 wt% asphalt emulsion and concrete sand as the two barriers for lysimeter testing. Eight lysimeters, four each containing the two asphalt treatments, were installed in the Small Tube Lysimeter Facility on the Hanford Site. The lysimeter tests allow the performance of these barrier formulations to be evaluated under more natural environmental conditions.

  19. Plastic Schottky barrier solar cells

    DOEpatents

    Waldrop, James R.; Cohen, Marshall J.

    1984-01-24

    A photovoltaic cell structure is fabricated from an active medium including an undoped, intrinsically p-type organic semiconductor comprising polyacetylene. When a film of such material is in rectifying contact with a magnesium electrode, a Schottky-barrier junction is obtained within the body of the cell structure. Also, a gold overlayer passivates the magnesium layer on the undoped polyacetylene film.

  20. Thermal barrier coating for alloy systems

    DOEpatents

    Seals, Roland D.; White, Rickey L.; Dinwiddie, Ralph B.

    2000-01-01

    An alloy substrate is protected by a thermal barrier coating formed from a layer of metallic bond coat and a top coat formed from generally hollow ceramic particles dispersed in a matrix bonded to the bond coat.

  1. Direct detection optical intersatellite link at 220 Mbps using AlGaAs laser diode and silicon APD with 4-ary PPM signaling

    NASA Technical Reports Server (NTRS)

    Sun, Xiaoli; Davidson, Frederic M.

    1990-01-01

    A newly developed 220 Mbps free-space 4-ary pulse position modulation (PPM) direct detection optical communication system is described. High speed GaAs integrated circuits were used to construct the PPM encoder and receiver electronic circuits. Both PPM slot and word timing recovery were provided in the PPM receiver. The optical transmitter consisted of an AlGaAs laser diode (Mitsubishi ML5702A, lambda=821nm) and a high speed driver unit. The photodetector consisted of a silicon avalanche photodiode (APD) (RCA30902S) preceded by an optical interference filter (delta lambda=10nm). Preliminary tests showed that the self-synchronized PPM receiver could achieve a receiver bit error rate of less than 10(exp -6) at 25 nW average received optical signal power or 360 photons per transmitted information bit. The relatively poor receiver sensitivity was believed to be caused by the insufficient electronic bandwidth of the APD preamplifier and the poor linearity of the preamplifier high frequency response.

  2. High-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well lasers on Si substrates

    NASA Technical Reports Server (NTRS)

    Kim, Jae-Hoon; Lang, Robert J.; Radhakrishnan, Gouri; Katz, Joseph; Narayanan, Authi A.

    1989-01-01

    A high-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well laser on Si substrates has been demonstrated for the first time by a hybrid growth of migration-enhanced molecular beam epitaxy followed by metalorganic vapor phase epitaxy. The quantum well laser showed an output power of more than 400 mW per facet under pulsed conditions. A room-temperature threshold current of 300 mA was obtained with a differential quantum efficiency of 40 percent without facet coating. The threshold current density was 550 A/sq cm for a cavity length of 500 microns. These results show the highest peak power reported to date for low-threshold lasers on Si substrates. The full width at half maximum of the far-field pattern parallel to the junction was 6 deg. Threshold current densities as low as 250 A/sq cm were obtained for lasers on GaAs substrates.

  3. Performance of AlGaAs, GaAs and InGaAs cells after 1 MeV electron irradiation

    NASA Technical Reports Server (NTRS)

    Curtis, Henry B.; Hart, Russell E., Jr.

    1987-01-01

    Electron irradiations were made on three different types of III-V cells. AlGaAs, GaAs, and InGaAs cells with bandgaps of approximately 1.72, 1.43, and 1.1 eV, respectively, were tested. All of the cells were concentrator cells and performance data from one sun to beyond 100x AMO were taken. The total 1 MeV electron fluence was 3 times 10 to the 15th power e/square cm with data taken at several intermediate fluences. Cell performance is presented as a function of electron fluence for various concentration ratios and two different temperatures (25 and 80 C). Since these three cell types are potential candidates for the individual cells in a cascade structure, it is possible to calculate the loss in performance of cascade cells under 1 MeV irradiation. Data are presented which show the calculated performance of both series-connected and separately connected cascade cells.

  4. Fracture mechanism of a thermal barrier coating

    NASA Astrophysics Data System (ADS)

    Samoilenko, V. M.; Ravilov, R. G.; Drevnyak, V. V.; Petrova, M. A.

    2016-06-01

    The fracture mechanism of the thermal barrier coating of gas turbine blades is studied. The causes of the fracture of the ceramic layer are discussed and the possible ways to increase the fatigue life of the thermal barrier coating are considered.

  5. Thermal barrier coatings

    SciTech Connect

    Alvin, Mary Anne

    2010-06-22

    This disclosure addresses the issue of providing a metallic-ceramic overlay coating that potentially serves as an interface or bond coat layer to provide enhanced oxidation resistance to the underlying superalloy substrate via the formation of a diffusion barrier regime within the supporting base material. Furthermore, the metallic-ceramic coating is expected to limit the growth of a continuous thermally grown oxide (TGO) layer that has been primarily considered to be the principal cause for failure of existing TBC systems. Compositional compatibility of the metallic-ceramic with traditional yttria-stabilized zirconia (YSZ) top coats is provided to further limit debond or spallation of the coating during operational use. A metallic-ceramic architecture is disclosed wherein enhanced oxidation resistance is imparted to the surface of nickel-based superalloy or single crystal metal substrate, with simultaneous integration of the yttria stabilized zirconia (YSZ) within the metallic-ceramic overlayer.

  6. Arabian Sea Fronts and Barrier Layers

    DTIC Science & Technology

    2015-09-30

    relationship with the Indian Ocean monsoons and regional climate in general. OBJECTIVES The primary objective of this project is to...enable accurate prediction of the coupled ocean-atmosphere system that governs the climate of the Northern Indian Ocean. RELATED PROJECTS NASA

  7. Investigation of electrochemical etch differences in AlGaAs heterostructures using Cl{sub 2} ion beam assisted etching

    SciTech Connect

    Anglin, Kevin Goodhue, William D.; Swint, Reuel B.; Porter, Jeanne

    2015-03-15

    A deeply etched, anisotropic 45° and 90° mirror technology is developed for Al{sub x}Ga{sub 1−x}As heterostructures using a Cl{sub 2} ion beam assisted etching system. When etching vertically, using a conductive low-erosion Ni mask, electrochemical etch differences between layers with various Al mole fractions caused nonuniform sidewall profiles not seen in semi-insulating GaAs test samples. These variations, based on alloy composition, were found to be negligible when etching at a 45°. A Si{sub 3}N{sub 4}-Ni etch mask is designed in order to electrically isolate charge buildup caused by the incoming Ar{sup +} ion beam to the Ni layer, preventing conduction to the underlying epitaxial layers. This modification produced smoothly etched facets, up to 8 μm in depth, enabling fabrication of substrate–surface-emitting slab-coupled optical waveguide lasers and other optoelectronic devices.

  8. Fast spatial atomic layer deposition of Al{sub 2}O{sub 3} at low temperature (<100 °C) as a gas permeation barrier for flexible organic light-emitting diode displays

    SciTech Connect

    Choi, Hagyoung; Shin, Seokyoon; Jeon, Hyeongtag; Choi, Yeongtae; Kim, Junghun; Kim, Sanghun; Chung, Seog Chul; Oh, Kiyoung

    2016-01-15

    The authors developed a high throughput (70 Å/min) and scalable space-divided atomic layer deposition (ALD) system for thin film encapsulation (TFE) of flexible organic light-emitting diode (OLED) displays at low temperatures (<100 °C). In this paper, the authors report the excellent moisture barrier properties of Al{sub 2}O{sub 3} films deposited on 2G glass substrates of an industrially relevant size (370 × 470 mm{sup 2}) using the newly developed ALD system. This new ALD system reduced the ALD cycle time to less than 1 s. A growth rate of 0.9 Å/cycle was achieved using trimethylaluminum as an Al source and O{sub 3} as an O reactant. The morphological features and step coverage of the Al{sub 2}O{sub 3} films were investigated using field emission scanning electron microscopy. The chemical composition was analyzed using Auger electron spectroscopy. These deposited Al{sub 2}O{sub 3} films demonstrated a good optical transmittance higher than 95% in the visible region based on the ultraviolet visible spectrometer measurements. Water vapor transmission rate lower than the detection limit of the MOCON test (less than 3.0 × 10{sup −3} g/m{sup 2} day) were obtained for the flexible substrates. Based on these results, Al{sub 2}O{sub 3} deposited using our new high-throughput and scalable spatial ALD is considered a good candidate for preparation of TFE films of flexible OLEDs.

  9. In vitro porcine blood-brain barrier model for permeability studies: pCEL-X software pKa(FLUX) method for aqueous boundary layer correction and detailed data analysis.

    PubMed

    Yusof, Siti R; Avdeef, Alex; Abbott, N Joan

    2014-12-18

    In vitro blood-brain barrier (BBB) models from primary brain endothelial cells can closely resemble the in vivo BBB, offering valuable models to assay BBB functions and to screen potential central nervous system drugs. We have recently developed an in vitro BBB model using primary porcine brain endothelial cells. The model shows expression of tight junction proteins and high transendothelial electrical resistance, evidence for a restrictive paracellular pathway. Validation studies using small drug-like compounds demonstrated functional uptake and efflux transporters, showing the suitability of the model to assay drug permeability. However, one limitation of in vitro model permeability measurement is the presence of the aqueous boundary layer (ABL) resulting from inefficient stirring during the permeability assay. The ABL can be a rate-limiting step in permeation, particularly for lipophilic compounds, causing underestimation of the permeability. If the ABL effect is ignored, the permeability measured in vitro will not reflect the permeability in vivo. To address the issue, we explored the combination of in vitro permeability measurement using our porcine model with the pKa(FLUX) method in pCEL-X software to correct for the ABL effect and allow a detailed analysis of in vitro (transendothelial) permeability data, Papp. Published Papp using porcine models generated by our group and other groups are also analyzed. From the Papp, intrinsic transcellular permeability (P0) is derived by simultaneous refinement using a weighted nonlinear regression, taking into account permeability through the ABL, paracellular permeability and filter restrictions on permeation. The in vitro P0 derived for 22 compounds (35 measurements) showed good correlation with P0 derived from in situ brain perfusion data (r(2)=0.61). The analysis also gave evidence for carrier-mediated uptake of naloxone, propranolol and vinblastine. The combination of the in vitro porcine model and the software

  10. Lipids in blood-brain barrier models in vitro I: Thin-layer chromatography and high-performance liquid chromatography for the analysis of lipid classes and long-chain polyunsaturated fatty acids.

    PubMed

    Krämer, Stefanie D; Hurley, Johannah A; Abbott, N Joan; Begley, David J

    2002-01-01

    The objectives of this study were to optimize a sensitive high-performance liquid chromatography (HPLC) method for fatty acid (FA) analysis for the quantification of polyunsaturated FAs (PUFAs) in cell lipid extracts and to analyze the lipid and FA patterns of three cell lines used in blood-brain barrier (BBB) models: RBE4, ECV304, and C6. Thin-layer chromatographic analysis revealed differences in the phosphatidylcholine-phosphatidylethanolamine (PC:PE) ratios and the triglyceride (TG) content. The PC:PE ratio was <1 for RBE4 cells but >1 for ECV304 and C6 cells. ECV304 cells displayed up to 9% TG depending on culture time, whereas the other cell lines contained about 1% TG. The percentages of docosahexaenoic acid were 9.4 +/- 1.7% of the unsaturated FAs in RBE4 cells (n = 5; 4 d in culture; 9.9% after 10 d), 8.1 +/- 2.0% in ECV304 cells (n = 11; 10 to 14 d), and 6.7 +/- 0.6% in C6 cells (n = 6; 10 to 14 d) and were close to the published values for rat brain microvascular endothelium. The percentage of arachidonic acid (C20:4) was about half that in vivo. ECV304 cells contained the highest fraction of C20:4, 17.8 +/- 2.2%; RBE4 cells contained 11.6 +/- 2.4%; and C6 cells 15.8 +/- 1.9%. It is concluded that a sensitive HPLC method for FAs is now optimized for the analysis of long-chain PUFAs. The results provide a useful framework for studies on the effects of lipid modulation and give reference information for the development of further BBB models.

  11. Construction of low permeability soil-bentonite barrier caps and liners for landfills

    SciTech Connect

    Webber, T.; Williams, M.

    1995-12-31

    A low permeability soil barrier layer is the usual regulatory requirement for both caps and liner systems on modern municipal, industrial, and hazardous waste landfills. This soil layer is either used as the sole barrier or as the soil component of a composite liner system. This paper presents construction experience for blending on site soils with sodium bentonite to produce a thick, low permeability soil barrier layer. The paper begins with a description of the components and construction of the barrier layer and discusses how soil-bentonite barrier layers meet or exceed the regulatory performance criteria for both State and Federal agencies.

  12. Outer brain barriers in rat and human development

    PubMed Central

    Brøchner, Christian B.; Holst, Camilla B.; Møllgård, Kjeld

    2015-01-01

    Complex barriers at the brain's surface, particularly in development, are poorly defined. In the adult, arachnoid blood-cerebrospinal fluid (CSF) barrier separates the fenestrated dural vessels from the CSF by means of a cell layer joined by tight junctions. Outer CSF-brain barrier provides diffusion restriction between brain and subarachnoid CSF through an initial radial glial end feet layer covered with a pial surface layer. To further characterize these interfaces we examined embryonic rat brains from E10 to P0 and forebrains from human embryos and fetuses (6–21st weeks post-conception) and adults using immunohistochemistry and confocal microscopy. Antibodies against claudin-11, BLBP, collagen 1, SSEA-4, MAP2, YKL-40, and its receptor IL-13Rα2 and EAAT1 were used to describe morphological characteristics and functional aspects of the outer brain barriers. Claudin-11 was a reliable marker of the arachnoid blood-CSF barrier. Collagen 1 delineated the subarachnoid space and stained pial surface layer. BLBP defined radial glial end feet layer and SSEA-4 and YKL-40 were present in both leptomeningeal cells and end feet layer, which transformed into glial limitans. IL-13Rα2 and EAAT1 were present in the end feet layer illustrating transporter/receptor presence in the outer CSF-brain barrier. MAP2 immunostaining in adult brain outlined the lower border of glia limitans; remnants of end feet were YKL-40 positive in some areas. We propose that outer brain barriers are composed of at least 3 interfaces: blood-CSF barrier across arachnoid barrier cell layer, blood-CSF barrier across pial microvessels, and outer CSF-brain barrier comprising glial end feet layer/pial surface layer. PMID:25852456

  13. Improved metallic and thermal barrier coatings

    NASA Technical Reports Server (NTRS)

    Stecura, S.

    1981-01-01

    Low thermal conductivity two layer ceramic coatings are efficient thermal barriers between cooled matallic components and high temperature combustion gases. Potential components are combustors, blades, and vanes in aircraft engines of power-generating turbines. Presence of two layer coatings greatly reduces temperature and coolant requirements.

  14. Oxygen-Barrier Coating for Titanium

    NASA Technical Reports Server (NTRS)

    Clark, Ronald K.; Unnam, Jalaiah

    1987-01-01

    Oxygen-barrier coating for titanium developed to provide effective and low-cost means for protecting titanium alloys from oxygen in environment when alloys used in high-temperature mechanical or structural applications. Provides protective surface layer, which reduces extent of surface oxidation of alloy and forms barrier to diffusion of oxygen, limiting contamination of substrate alloy by oxygen. Consists of submicron layer of aluminum deposited on surface of titanium by electron-beam evaporation, with submicron layer of dioxide sputtered onto aluminum to form coat.

  15. Thermal barrier coating life prediction model development

    NASA Technical Reports Server (NTRS)

    Demasi, J. T.; Sheffler, K. D.

    1986-01-01

    The objective of this program is to establish a methodology to predict Thermal Barrier Coating (TBC) life on gas turbine engine components. The approach involves experimental life measurement coupled with analytical modeling of relevant degradation modes. The coating being studied is a flight qualified two layer system, designated PWA 264, consisting of a nominal ten mil layer of seven percent yttria partially stabilized zirconia plasma deposited over a nominal five mil layer of low pressure plasma deposited NiCoCrAlY. Thermal barrier coating degradation modes being investigated include: thermomechanical fatigue, oxidation, erosion, hot corrosion, and foreign object damage.

  16. Barrier mechanisms in the Drosophila blood-brain barrier

    PubMed Central

    Hindle, Samantha J.; Bainton, Roland J.

    2014-01-01

    The invertebrate blood-brain barrier (BBB) field is growing at a rapid pace and, in recent years, studies have shown a physiologic and molecular complexity that has begun to rival its vertebrate counterpart. Novel mechanisms of paracellular barrier maintenance through G-protein coupled receptor signaling were the first demonstrations of the complex adaptive mechanisms of barrier physiology. Building upon this work, the integrity of the invertebrate BBB has recently been shown to require coordinated function of all layers of the compound barrier structure, analogous to signaling between the layers of the vertebrate neurovascular unit. These findings strengthen the notion that many BBB mechanisms are conserved between vertebrates and invertebrates, and suggest that novel findings in invertebrate model organisms will have a significant impact on the understanding of vertebrate BBB functions. In this vein, important roles in coordinating localized and systemic signaling to dictate organism development and growth are beginning to show how the BBB can govern whole animal physiologies. This includes novel functions of BBB gap junctions in orchestrating synchronized neuroblast proliferation, and of BBB secreted antagonists of insulin receptor signaling. These advancements and others are pushing the field forward in exciting new directions. In this review, we provide a synopsis of invertebrate BBB anatomy and physiology, with a focus on insights from the past 5 years, and highlight important areas for future study. PMID:25565944

  17. Quantum efficiency of the photocurrent in Schottky barrier structures

    NASA Astrophysics Data System (ADS)

    Simeonov, S. S.; Kafedzhiiska, E. I.; Gerasimov, A. L.

    1987-03-01

    Expressions for the concentration of minority and majority carriers in the illuminated space charge layer of Schottky barrier structures are obtained. The dark current and the photocurrent are determined from the minority and majority carrier concentration at the metal-semiconductor boundary of Schottky barrier structures. A correction to the Gartner expression for the quantum efficiency of the Schottky barrier structures is given. A qualitative estimation of a short-wavelength decrease in the quantum efficiency of Schottky barrier structures is proposed.

  18. Highly Stable Sr-Free Cobaltite-Based Perovskite Cathodes Directly Assembled on a Barrier-Layer-Free Y2 O3 -ZrO2 Electrolyte of Solid Oxide Fuel Cells.

    PubMed

    Ai, Na; Li, Na; Rickard, William D A; Cheng, Yi; Chen, Kongfa; Jiang, San Ping

    2017-03-09

    Direct assembly is a newly developed technique in which a cobaltite-based perovskite (CBP) cathode can be directly applied to a barrier-layer-free Y2 O3 -ZrO2 (YSZ) electrolyte with no high-temperature pre-sintering steps. Solid oxide fuel cells (SOFCs) based on directly assembled CBPs such as La0.6 Sr0.4 Co0.2 Fe0.8 O3-δ show high performance initially but degrade rapidly under SOFC operation conditions at 750 °C owing to Sr segregation and accumulation at the electrode/electrolyte interface. Herein, the performance and interface of Sr-free CBPs such as LaCoO3-δ (LC) and Sm0.95 CoO3-δ (SmC) and their composite cathodes directly assembled on YSZ electrolyte was studied systematically. The LC electrode underwent performance degradation, most likely owing to cation demixing and accumulation of La on the YSZ electrolyte under polarization at 500 mA cm(-2) and 750 °C. However, the performance and stability of LC electrodes could be substantially enhanced by the formation of LC-gadolinium-doped ceria (GDC) composite cathodes. Replacement of La by Sm increased the cell stability, and doping of 5 % Pd to form Sm0.95 Co0.95 Pd0.05 O3-δ (SmCPd) significantly improved the electrode activity. An anode-supported YSZ-electrolyte cell with a directly assembled SmCPd-GDC composite electrode exhibited a peak power density of 1.4 W cm(-2) at 750 °C, and an excellent stability at 750 °C for over 240 h. The higher stability of SmC as compared to that of LC is most likely a result of the lower reactivity of SmC with YSZ. This study demonstrates the new opportunities in the design and development of intermediate-temperature SOFCs based on the directly assembled high-performance and durable Sr-free CBP cathodes.

  19. Numerical simulations of capillary barrier field tests

    SciTech Connect

    Morris, C.E.; Stormont, J.C.

    1997-12-31

    Numerical simulations of two capillary barrier systems tested in the field were conducted to determine if an unsaturated flow model could accurately represent the observed results. The field data was collected from two 7-m long, 1.2-m thick capillary barriers built on a 10% grade that were being tested to investigate their ability to laterally divert water downslope. One system had a homogeneous fine layer, while the fine soil of the second barrier was layered to increase its ability to laterally divert infiltrating moisture. The barriers were subjected first to constant infiltration while minimizing evaporative losses and then were exposed to ambient conditions. The continuous infiltration period of the field tests for the two barrier systems was modelled to determine the ability of an existing code to accurately represent capillary barrier behavior embodied in these two designs. Differences between the field test and the model data were found, but in general the simulations appeared to adequately reproduce the response of the test systems. Accounting for moisture retention hysteresis in the layered system will potentially lead to more accurate modelling results and is likely to be important when developing reasonable predictions of capillary barrier behavior.

  20. Oxygen diffusion barrier coating

    NASA Technical Reports Server (NTRS)

    Unnam, Jalaiah (Inventor); Clark, Ronald K. (Inventor)

    1987-01-01

    A method for coating a titanium panel or foil with aluminum and amorphous silicon to provide an oxygen barrier abrogating oxidation of the substrate metal is developed. The process is accomplished with known inexpensive procedures common in materials research laboratories, i.e., electron beam deposition and sputtering. The procedures are conductive to treating foil gage titanium and result in submicron layers which virtually add no weight to the titanium. There are no costly heating steps. The coatings blend with the substrate titanium until separate mechanical properties are subsumed by those of the substrate without cracking or spallation. This method appreciably increases the ability of titanium to mechanically perform in high thermal environments such as those witnessed on structures of space vehicles during re-entry

  1. Thermal barrier coating resistant to sintering

    DOEpatents

    Subramanian, Ramesh; Sabol, Stephen M.

    2001-01-01

    A device (10) having a ceramic thermal barrier coating layer (16) characterized by a microstructure having gaps (18) with a sintering inhibiting material (22) disposed on the columns (20) within the gaps (18). The sintering resistant material (22) is stable over the range of operating temperatures of the device (10) and is not soluble with the underlying ceramic layer (16). For a YSZ ceramic layer (16) the sintering resistant layer (22) may preferably be aluminum oxide or yttrium aluminum oxide, deposited as a continuous layer or as nodules.

  2. Filaggrin and Skin Barrier Function.

    PubMed

    Kezic, Sanja; Jakasa, Ivone

    2016-01-01

    The skin barrier function is greatly dependent on the structure and composition of the uppermost layer of the epidermis, the stratum corneum (SC), which is made up of flattened anucleated cells surrounded by highly organized and continuous lipid matrix. The interior of the corneocytes consists mainly of keratin filaments aggregated by filaggrin (FLG) protein. Next, together with several other proteins, FLG is cross-linked into a mechanically robust cornified cell envelope providing a scaffold for the extracellular lipid matrix. In addition to its role for the SC structural and mechanical integrity, FLG degradation products account in part for the water-holding capacity and maintenance of acidic pH of the SC, both crucial for the epidermal barrier homoeostasis by regulating activity of multiple enzymes that control desquamation, lipid synthesis and inflammation. The major determinant of FLG expression in the skin are loss-of-function mutations in FLG, the strongest genetic risk factor for atopic dermatitis (AD), an inflammatory skin disease characterized by a reduced skin barrier function. The prevalence of FLG mutations varies greatly among different populations and ranges from about 10% in Northern Europeans to less than 1% in the African populations. An impaired skin barrier facilitates absorption of potentially hazardous chemicals, which might cause adverse effects in the skin, such as contact dermatitis, or systemic toxicity after their passage into blood. In another direction, a leaky epidermal barrier will lead to enhanced loss of water from the skin. A recent study has shown that even subtle increase in epidermal water loss in newborns increases the risk for AD. Although there are multiple modes of action by which FLG might affect skin barrier it is still unclear whether and how FLG deficiency leads to the reduced skin barrier function. This chapter summarizes the current knowledge in this field obtained from clinical studies, and animal and in vitro models

  3. Permeability Barrier Generation in the Martian Lithosphere

    NASA Astrophysics Data System (ADS)

    Schools, Joe; Montési, Laurent

    2015-11-01

    Permeability barriers develop when a magma produced in the interior of a planet rises into the cooler lithosphere and crystallizes more rapidly than the lithosphere can deform (Sparks and Parmentier, 1991). Crystallization products may then clog the porous network in which melt is propagating, reducing the permeability to almost zero, i.e., forming a permeability barrier. Subsequent melts cannot cross the barrier. Permeability barriers have been useful to explain variations in crustal thickness at mid-ocean ridges on Earth (Magde et al., 1997; Hebert and Montési, 2011; Montési et al., 2011). We explore here under what conditions permeability barriers may form on Mars.We use the MELTS thermodynamic calculator (Ghiorso and Sack, 1995; Ghiorso et al., 2002; Asimow et al., 2004) in conjunction with estimated Martian mantle compositions (Morgan and Anders, 1979; Wänke and Dreibus, 1994; Lodders and Fegley, 1997; Sanloup et al., 1999; Taylor 2013) to model the formation of permeability barriers in the lithosphere of Mars. In order to represent potential past and present conditions of Mars, we vary the lithospheric thickness, mantle potential temperature (heat flux), oxygen fugacity, and water content.Our results show that permeability layers can develop in the thermal boundary layer of the simulated Martian lithosphere if the mantle potential temperature is higher than ~1500°C. The various Martian mantle compositions yield barriers in the same locations, under matching variable conditions. There is no significant difference in barrier location over the range of accepted Martian oxygen fugacity values. Water content is the most significant influence on barrier development as it reduces the temperature of crystallization, allowing melt to rise further into the lithosphere. Our lower temperature and thicker lithosphere model runs, which are likely the most similar to modern Mars, show no permeability barrier generation. Losing the possibility of having a permeability

  4. Multilayer coatings for flexible high-barrier materials

    NASA Astrophysics Data System (ADS)

    Vaško, Karol; Noller, Klaus; Mikula, Milan; Amberg-Schwab, Sabine; Weber, Ulrike

    2009-06-01

    A multilayer, flexible, and transparent high-barrier system based on flexible plastic foils, polyethyleneterephthalate (PET) and ethylene-tetrafluoroethylene-copolymer (ETFE), combined with vacuum-deposited, inorganic SiOx layers and hybrid ORMOCER® varnish layers were prepared in different orders on a semiproduction level. Barrier properties of prepared systems, as water vapour transmission (WVTR) and oxygen transmission (OTR), were measured and studied in connection with surface energy, surface topography, and water vapour adsorption properties. Correlations among layers sequence, barrier properties, and other parameters are presented, including some basic principles of permeation of substances through multilayer barrier systems. A combination of several inorganic and hybrid varnish layers is necessary to achieve the technological demands from a barrier standpoint. It is easier to suppress the oxygen transport than the water transport, due to the additional active penetration of water through hydrogen bonds and silanol creations at oxide interfaces, capillary condensation, and swelling with high internal pressure, leading to new defects.

  5. Multilayer coatings for flexible high-barrier materials

    NASA Astrophysics Data System (ADS)

    Vaško, Karol; Noller, Klaus; Mikula, Milan; Amberg-Schwab, Sabine; Weber, Ulrike

    2009-06-01

    A multilayer, flexible, and transparent high-barrier system based on flexible plastic foils, polyethyleneterephthalate (PET) and ethylene-tetrafluoroethylene-copolymer (ETFE), combined with vacuum-deposited, inorganic SiOx layers and hybrid ORMOCER® varnish layers were prepared in different orders on a semiproduction level. Barrier properties of prepared systems, as water vapour transmission (WVTR) and oxygen transmission (OTR), were measured and studied in connection with surface energy, surface topography, and water vapour adsorption properties. Correlations among layers sequence, barrier properties, and other parameters are presented, including some basic principles of permeation of substances through multilayer barrier systems. A combination of several inorganic and hybrid varnish layers is necessary to achieve the technological demands from a barrier standpoint. It is easier to suppress the oxygen transport than the water transport, due to the additional active penetration of water through hydrogen bonds and silanol creations at oxide interfaces, capillary condensation, and swelling with high internal pressure, leading to new defects.

  6. Field study plan for alternate barriers

    SciTech Connect

    Freeman, H.D.; Gee, G.W.; Relyea, J.F.

    1989-05-01

    Pacific Northwest Laboratory (PNL) is providing technical assistance in selecting, designing, evaluating, and demonstrating protective barriers. As part of this technical assistance effort, asphalt, clay, and chemical grout will be evaluated for use as alternate barriers. The purpose of the subsurface layer is to reduce the likelihood that extreme events (i.e., 100-year maximum storms, etc.) will cause significant drainage through the barrier. The tests on alternate barriers will include laboratory and field analysis of the subsurface layer performance. This field test plan outlines the activities required to test and design subsurface moisture barriers. The test plan covers activities completed in FY 1988 and planned through FY 1992 and includes a field-scale test of one or more of the alternate barriers to demonstrate full-scale application techniques and to provide performance data on a larger scale. Tests on asphalt, clay, and chemical grout were initiated in FY 1988 in small (30.5 cm diameter) tube-layer lysimeters. The parameters used for testing the materials were different for each one. The tests had to take into account the differences in material characteristics and response to change in conditions, as well as information provided by previous studies. 33 refs., 8 figs., 1 tab.

  7. Richards Barrier LA Reference Design Feature Evaluation

    SciTech Connect

    N.E. Kramer

    1999-11-17

    The Richards Barrier is one of the design features of the repository to be considered for the License Application (LA), Richards was a soil scientist who first described the diversion of moisture between two materials with different hydrologic properties. In this report, a Richards Barrier is a special type of backfill with a fine-grained material (such as sand) overlaying a coarse-grained material (such as gravel). Water that enters an emplacement drift will first encounter the fine-grained material and be transported around the coarse-grained material covering the waste package, thus protecting the waste package from contact with most of the groundwater. The objective of this report is to discuss the benefits and liabilities to the repository by the inclusion of a Richards Barrier type backfill in emplacement drifts. The Richards Barrier can act as a barrier to water flow, can reduce the waste package material dissolution rate, limit mobilization of the radionuclides, and can provide structural protection for the waste package. The scope of this report is to: (1) Analyze the behavior of barrier materials following the intrusion of groundwater for influxes of 1 to 300 mm per year. The report will demonstrate diversion of groundwater intrusions into the barrier over an extended time period when seismic activity and consolidation may cause the potential for liquefaction and settlement of the Richards Barrier. (2) Review the thermal effects of the Richards Barrier on material behavior. (3) Analyze the effect of rockfall on the performance of the Richards Barrier and the depth of the barrier required to protect waste packages under the barrier. (4) Review radiological and heating conditions on placement of multiple layers of the barrier. Subsurface Nuclear Safety personnel will perform calculations to determine the radiation reduction-time relationship and shielding capacity of the barrier. (5) Evaluate the effects of ventilation on cooling of emplacement drifts and

  8. Pratt & Whitney thermal barrier coatings

    SciTech Connect

    Bornstein, N.; Marcin, J.

    1995-10-01

    The objective of the Advanced Turbine Systems (ATS) Program is to develop ultra-high efficient, environmentally superior, and cost competitive gas turbine systems. The operating profiles of these industrial gas turbines are long, less cyclic with fewer transients-compared with those for aircraft gas turbine engines. Therefore, creep rather than thermal fatigue, becomes primary life-limiting for hot section components. Thermal barrier coatings (TBCs) will be used to achieve the objectives of the program. TBCs allow surface temperatures to increase without compromising the structural properties of the alloy. TBCs typically consist of a ceramic insulating layer, deposited onto the substrate with an intervening metallic layer, which imparts oxidation protection to the substrate and provides a surface to which the ceramic layer can adhere.

  9. Rocket Motor Joint Construction Including Thermal Barrier

    NASA Technical Reports Server (NTRS)

    Steinetz, Bruce M. (Inventor); Dunlap, Patrick H., Jr. (Inventor)

    2002-01-01

    A thermal barrier for extremely high temperature applications consists of a carbon fiber core and one or more layers of braided carbon fibers surrounding the core. The thermal barrier is preferably a large diameter ring, having a relatively small cross-section. The thermal barrier is particularly suited for use as part of a joint structure in solid rocket motor casings to protect low temperature elements such as the primary and secondary elastomeric O-ring seals therein from high temperature gases of the rocket motor. The thermal barrier exhibits adequate porosity to allow pressure to reach the radially outward disposed O-ring seals allowing them to seat and perform the primary sealing function. The thermal barrier is disposed in a cavity or groove in the casing joint, between the hot propulsion gases interior of the rocket motor and primary and secondary O-ring seals. The characteristics of the thermal barrier may be enhanced in different applications by the inclusion of certain compounds in the casing joint, by the inclusion of RTV sealant or similar materials at the site of the thermal barrier, and/or by the incorporation of a metal core or plurality of metal braids within the carbon braid in the thermal barrier structure.

  10. Holographic recording medium employing a photoconductive layer and a low molecular weight microcrystalline polymeric layer

    NASA Technical Reports Server (NTRS)

    Gange, Robert Allen (Inventor)

    1977-01-01

    A holographic recording medium comprising a conductive substrate, a photoconductive layer and an electrically alterable layer of a linear, low molecular weight hydrocarbon polymer has improved fatigue resistance. An acrylic barrier layer can be interposed between the photoconductive and electrically alterable layers.

  11. Psoriasis genetics: breaking the barrier

    PubMed Central

    Roberson, Elisha D.O.; Bowcock, Anne M.

    2010-01-01

    Psoriasis is a common incurable inflammatory skin disease affecting 2–3% of the European population. Psoriatic skin contains large numbers of immune cells which produce many cytokines, chemokines and inflammatory molecules. The epidermis divides much faster than normal and has a defective outer layer or barrier which under normal circumstances protects from infection and dehydration. Psoriatic skin is characterized by a distinct set of inflammation and epidermal proliferation and differentiation markers, and it has not been clear if the genetic basis of psoriasis is due to defects of the immune system or the skin. One genetic determinant lies within the major histocompatibility complex class 1 region. Genome-wide association studies have revealed genetic susceptibility factors that play a role in the formation of immune cells found in psoriasis lesions. Others affect epidermal proliferation and the formation of the skin’s barrier. Hence, genetic components of both the immune system and the epidermis predispose to disease. PMID:20692714

  12. Thermal barrier coating resistant to sintering

    DOEpatents

    Subramanian, Ramesh; Seth, Brij B.

    2004-06-29

    A device (10) is made, having a ceramic thermal barrier coating layer (16) characterized by a microstructure having gaps (18) with a sintering inhibiting material (22) disposed on the columns (20) within the gaps (18). The sintering resistant material (22) is stable over the range of operating temperatures of the device (10), is not soluble with the underlying ceramic layer (16) and is applied by a process that is not an electron beam physical vapor deposition process.

  13. The Barriers Project.

    ERIC Educational Resources Information Center

    Confederation Coll. of Applied Arts and Technology, Thunder Bay (Ontario).

    In 1987, the Barriers Project was initiated by Confederation College of Applied Arts and Technology to engage 31 selected community colleges in Canada in an organized self-appraisal of institutional barriers to the enrollment of part-time credit students. From the outset, colleges were encouraged to limit their investigation to barriers over which…

  14. Ocean Barrier Layers’ Effect on Tropical Cyclone Intensification

    SciTech Connect

    Balaguru, Karthik; Chang, P.; Saravanan, R.; Leung, Lai-Yung R.; Xu, Zhao; Li, M.; Hsieh, J.

    2012-09-04

    Improving a tropical cyclone's forecast and mitigating its destructive potential requires knowledge of various environmental factors that influence the cyclone's path and intensity. Herein, using a combination of observations and model simulations, we systematically demonstrate that tropical cyclone intensification is significantly affected by salinity-induced barrier layers, which are 'quasi-permanent' features in the upper tropical oceans. When tropical cyclones pass over regions with barrier layers, the increased stratification and stability within the layer reduce storm-induced vertical mixing and sea surface temperature cooling. This causes an increase in enthalpy flux from the ocean to the atmosphere and, consequently, an intensification of tropical cyclones. On average, the tropical cyclone intensification rate is nearly 50% higher over regions with barrier layers, compared to regions without. Our finding, which underscores the importance of observing not only the upper-ocean thermal structure but also the salinity structure in deep tropical barrier layer regions, may be a key to more skillful predictions of tropical cyclone intensities through improved ocean state estimates and simulations of barrier layer processes. As the hydrological cycle responds to global warming, any associated changes in the barrier layer distribution must be considered in projecting future tropical cyclone activity.

  15. Fabrication of novel electrolyte-layer free fuel cell with semi-ionic conductor (Ba0.5Sr0.5Co0.8Fe0.2O3-δ- Sm0.2Ce0.8O1.9) and Schottky barrier

    NASA Astrophysics Data System (ADS)

    Afzal, Muhammad; Saleemi, Mohsin; Wang, Baoyuan; Xia, Chen; Zhang, Wei; He, Yunjuan; Jayasuriya, Jeevan; Zhu, Bin

    2016-10-01

    Perovskite Ba0.5Sr0.5Co0.8Fe0.2O3-δ (BSCF) is synthesized via a chemical co-precipitation technique for a low temperature solid oxide fuel cell (LTSOFC) (300-600 °C) and electrolyte-layer free fuel cell (EFFC) in a comprehensive study. The EFFC with a homogeneous mixture of samarium doped ceria (SDC): BSCF (60%:40% by weight) which is rather similar to the cathode (SDC: BSCF in 50%:50% by weight) used for a three layer SOFC demonstrates peak power densities up to 655 mW/cm2, while a three layer (anode/electrolyte/cathode) SOFC has reached only 425 mW/cm2 at 550 °C. Chemical phase, crystal structure and morphology of the as-prepared sample are characterized by X-ray diffraction and field emission scanning electron microscopy coupled with energy dispersive spectroscopy. The electrochemical performances of 3-layer SOFC and EFFC are studied by electrochemical impedance spectroscopy (EIS). As-prepared BSCF has exhibited a maximum conductivity above 300 S/cm at 550 °C. High performance of the EFFC device corresponds to a balanced combination between ionic and electronic (holes) conduction characteristic. The Schottky barrier prevents the EFFC from the electronic short circuiting problem which also enhances power output. The results provide a new way to produce highly effective cathode materials for LTSOFC and semiconductor designs for EFFC functions using a semiconducting-ionic material.

  16. Extremal surface barriers

    NASA Astrophysics Data System (ADS)

    Engelhardt, Netta; Wall, Aron C.

    2014-03-01

    We present a generic condition for Lorentzian manifolds to have a barrier that limits the reach of boundary-anchored extremal surfaces of arbitrary dimension. We show that any surface with nonpositive extrinsic curvature is a barrier, in the sense that extremal surfaces cannot be continuously deformed past it. Furthermore, the outermost barrier surface has nonnegative extrinsic curvature. Under certain conditions, we show that the existence of trapped surfaces implies a barrier, and conversely. In the context of AdS/CFT, these barriers imply that it is impossible to reconstruct the entire bulk using extremal surfaces. We comment on the implications for the firewall controversy.

  17. Thick thermal barrier coatings for diesel components

    NASA Technical Reports Server (NTRS)

    Yonushonis, T. M.

    1991-01-01

    An engineered thick thermal barrier coating consisting of multiple layers of zirconia and CoCrAlY with a zirconia top layer and having a system thermal conductance less than 410 w/m(exp 2)K exceeded the 100 hour engine durability goals set forth in this program. The thermal barrier coatings were intact at the test conclusion. Back to back single cylinder research engine tests were conducted with watercooled, metal hardware and oil-cooled, thermal barrier coating insulated hardware to determine apparent heat release and fuel economy. Apparent heat release data revealed that the insulated engine had a shorter ignition delay and a longer combustion duration than the metal engine. The insulated engine fuel economy was approximately two percent worse on average for this series of tests. There was no attempt to optimize engine efficiency of the insulated engine by modifying the engine timing, coating, or other techniques.

  18. Hanford Permanent Isolation Barrier Program: Asphalt technology test plan

    SciTech Connect

    Freeman, H.D.; Romine, R.A.

    1994-05-01

    The Hanford Permanent Isolation Barriers use engineered layers of natural materials to create an integrated structure with backup protective features. The objective of current designs is to develop a maintenance-free permanent barrier that isolates wastes for a minimum of 1000 years by limiting water drainage to near-zero amounts. Asphalt is being used as an impermeable water diversion layer to provide a redundant layer within the overall barrier design. Data on asphalt barrier properties in a buried environment are not available for the required 100-year time frame. The purpose of this test plan is to outline the activities planned to obtain data with which to estimate performance of the asphalt layers.

  19. Method Producing an SNS Superconducting Junction with Weak Link Barrier

    NASA Technical Reports Server (NTRS)

    Hunt, Brian D. (Inventor)

    1999-01-01

    A method of producing a high temperature superconductor Josephson element and an improved SNS weak link barrier element is provided. A YBaCuO superconducting electrode film is deposited on a substrate at a temperature of approximately 800 C. A weak link barrier layer of a nonsuperconducting film of N-YBaCuO is deposited over the electrode at a temperature range of 520 C. to 540 C. at a lower deposition rate. Subsequently a superconducting counter-electrode film layer of YBaCuO is deposited over the weak link barrier layer at approximately 800 C. The weak link barrier layer has a thickness of approximately 50 A and the SNS element can be constructed to provide an edge geometry junction.

  20. Skin barrier in atopic dermatitis: beyond filaggrin*

    PubMed Central

    Zaniboni, Mariana Colombini; Samorano, Luciana Paula; Orfali, Raquel Leão; Aoki, Valéria

    2016-01-01

    Atopic dermatitis is a chronic inflammatory skin disease with a complex pathogenesis, where changes in skin barrier and imbalance of the immune system are relevant factors. The skin forms a mechanic and immune barrier, regulating water loss from the internal to the external environment, and protecting the individual from external aggressions, such as microorganisms, ultraviolet radiation and physical trauma. Main components of the skin barrier are located in the outer layers of the epidermis (such as filaggrin), the proteins that form the tight junction (TJ) and components of the innate immune system. Recent data involving skin barrier reveal new information regarding its structure and its role in the mechanic-immunological defense; atopic dermatitis (AD) is an example of a disease related to dysfunctions associated with this complex. PMID:27579743

  1. Water-retaining barrier and method of construction

    DOEpatents

    Adams, M.R.; Field, J.G.

    1996-02-20

    An agricultural barrier is disclosed which provides a medium for supporting plant life in an arid or semi-arid land region having a ground surface. The barrier is disposed on native soil of the region. The barrier includes a first porous layer composed of pieces of basalt, and is in contact with the native soil. There is a less porous second layer of at least one material selected from at least one of sand and gravel. The second layer overlies the first layer. A third layer, less porous than the second layer, contains soil which favors plant growth. The third layer overlies the second layer and has an exposed upper surface. The porosities of the second and third layers differ from one another by an amount which impedes transport of soil from the first layer into the second layer. Soil for the third layer may be provided by washing salinated or contaminated soil with water and using the washed soil for the third layer. 2 figs.

  2. Water-retaining barrier and method of construction

    DOEpatents

    Adams, Melvin R.; Field, Jim G.

    1996-01-01

    An agricultural barrier providing a medium for supporting plant life in an arid or semi-arid land region having a ground surface, the barrier being disposed on native soil of the region, the barrier including: a first layer composed of pieces of basalt, the first layer being porous and being in contact with the native soil; a porous second layer of at least one material selected from at least one of sand and gravel, the second layer being less porous than, and overlying, the first layer; and a porous third layer containing soil which favors plant growth, the third layer being less porous than, and overlying, the second layer and having an exposed upper surface, wherein the porosities of the second and third layers differ from one another by an amount which impedes transport of soil from the first layer into the second layer. Soil for the third layer may be provided by washing salinated or contaminated soil with water and using the washed soil for the third layer.

  3. Surface barrier research at the Hanford Site

    SciTech Connect

    Gee, G.W.; Ward, A.L.; Fayer, M.J.

    1997-12-31

    At the DOE Hanford Site, a field-scale prototype surface barrier was constructed in 1994 over an existing waste site as a part of a CERCLA treatability test. The above-grade barrier consists of a fine-soil layer overlying coarse layers of sands, gravels, basalt rock (riprap), and a low permeability asphalt layer. Two sideslope configurations, clean-fill gravel on a 10:1 slope and basalt riprap on a 2:1 slope, were built and are being tested. Design considerations included: constructability; drainage and water balance monitoring, wind and water erosion control and monitoring; surface revegetation and biotic intrusion; subsidence and sideslope stability, and durability of the asphalt layer. The barrier is currently in the final year of a three-year test designed to answer specific questions related to stability and long-term performance. One half of the barrier is irrigated such that the total water applied, including precipitation, is 480 mm/yr (three times the long-term annual average). Each year for the past two years, an extreme precipitation event (71 mm in 8 hr) representing a 1,000-yr return storm was applied in late March, when soil water storage was at a maximum. While the protective sideslopes have drained significant amounts of water, the soil cover (2-m of silt-loam soil overlying coarse sand and rock) has never drained. During the past year there was no measurable surface runoff or wind erosion. This is attributed to extensive revegetation of the surface. In addition, the barrier elevation has shown a small increase of 2 to 3 cm that is attributed to a combination of root proliferation and freeze/thaw activity. Testing will continue through September 1997. Performance data from the prototype barrier will be used by DOE in site-closure decisions at Hanford.

  4. High Operating Temperature Barrier Infrared Detector with Tailorable Cutoff Wavelength

    NASA Technical Reports Server (NTRS)

    Ting, David Z. (Inventor); Hill, Cory J. (Inventor); Seibel, Alexander (Inventor); Bandara, Sumith Y. (Inventor); Gunapala, Sarath D. (Inventor)

    2015-01-01

    A barrier infrared detector with absorber materials having selectable cutoff wavelengths and its method of manufacture is described. A GaInAsSb absorber layer may be grown on a GaSb substrate layer formed by mixing GaSb and InAsSb by an absorber mixing ratio. A GaAlAsSb barrier layer may then be grown on the barrier layer formed by mixing GaSb and AlSbAs by a barrier mixing ratio. The absorber mixing ratio may be selected to adjust a band gap of the absorber layer and thereby determine a cutoff wavelength for the barrier infrared detector. The absorber mixing ratio may vary along an absorber layer growth direction. Various contact layer architectures may be used. In addition, a top contact layer may be isolated into an array of elements electrically isolated as individual functional detectors that may be used in a detector array, imaging array, or focal plane array.

  5. Method of making dense, conformal, ultra-thin cap layers for nanoporous low-k ILD by plasma assisted atomic layer deposition

    DOEpatents

    Jiang, Ying-Bing; Cecchi, Joseph L.; Brinker, C. Jeffrey

    2011-05-24

    Barrier layers and methods for forming barrier layers on a porous layer are provided. The methods can include chemically adsorbing a plurality of first molecules on a surface of the porous layer in a chamber and forming a first layer of the first molecules on the surface of the porous layer. A plasma can then be used to react a plurality of second molecules with the first layer of first molecules to form a first layer of a barrier layer. The barrier layers can seal the pores of the porous material, function as a diffusion barrier, be conformal, and/or have a negligible impact on the overall ILD k value of the porous material.

  6. In-situ formation of multiphase deposited thermal barrier coatings

    DOEpatents

    Subramanian, Ramesh

    2004-01-13

    A multiphase ceramic thermal barrier coating is provided. The coating is adapted for use in high temperature applications in excess of about 1200.degree. C., for coating superalloy components of a combustion turbine engine. The coating comprises a ceramic single or two oxide base layer disposed on the substrate surface; and a ceramic oxide reaction product material disposed on the base layer, the reaction product comprising the reaction product of the base layer with a ceramic single or two oxide overlay layer.

  7. Improved performance thermal barrier coatings

    NASA Technical Reports Server (NTRS)

    Levine, S. R.; Miller, R. A.; Stecura, S.

    1983-01-01

    Thermal barrier coatings offer an attractive approach to improving the durability and efficiency of the hot section of heat engines. The coatings typically consist of an inner alloy bond coating about 0.01 cm thick resistant to oxidation and hot corrosion and an outer ceramic layer, usually a stabilized zirconia, 0.01-0.05 cm thick. Here, the materials, thermomechanical stress, and hot corrosion problems associated with thermal barrier coatings are reviewed along with the capabilities and limitations of current technology. The coatings discussed include ZrO2-Y2O3/NiCrAlY, ZrO2-Y2O3/NiCoCrAlY, ZrO2-MgO/NiCoCrAlY, CaO-SiO2/Co-Cr-Al-Y, and CaO-SiO2/NiCrAlY systems. It is emphasized that the performance of thermal barrier coatings is governed by many complex and interrelated factors, so that optimization of these coatings always involves certain tradeoffs.

  8. Hot Corrosion Mechanism in Multi-Layer Suspension Plasma Sprayed Gd2Zr2O7 /YSZ Thermal Barrier Coatings in the Presence of V2O5 + Na2SO4

    NASA Astrophysics Data System (ADS)

    Jonnalagadda, Krishna Praveen; Mahade, Satyapal; Curry, Nicholas; Li, Xin-Hai; Markocsan, Nicolaie; Nylén, Per; Björklund, Stefan; Peng, Ru Lin

    2017-01-01

    This study investigates the corrosion resistance of two-layer Gd2Zr2O7/YSZ, three-layer dense Gd2Zr2O7/ Gd2Zr2O7/YSZ, and a reference single-layer YSZ coating with a similar overall top coat thickness of 300-320 µm. All the coatings were manufactured by suspension plasma spraying resulting in a columnar structure except for the dense layer. Corrosion tests were conducted at 900 °C for 8 h using V2O5 and Na2SO4 as corrosive salts at a concentration of approximately 4 mg/cm2. SEM investigations after the corrosion tests show that Gd2Zr2O7-based coatings exhibited lower reactivity with the corrosive salts and the formation of gadolinium vanadate (GdVO4), accompanied by the phase transformation of zirconia was observed. It is believed that the GdVO4 formation between the columns reduced the strain tolerance of the coating and also due to the fact that Gd2Zr2O7 has a lower fracture toughness value made it more susceptible to corrosion-induced damage. Furthermore, the presence of a relatively dense layer of Gd2Zr2O7 on the top did not improve in reducing the corrosion-induced damage. For the reference YSZ coating, the observed corrosion-induced damage was lower probably due to combination of more limited salt penetration, the SPS microstructure and superior fracture toughness of YSZ.

  9. A double barrier memristive device

    PubMed Central

    Hansen, M.; Ziegler, M.; Kolberg, L.; Soni, R.; Dirkmann, S.; Mussenbrock, T.; Kohlstedt, H.

    2015-01-01

    We present a quantum mechanical memristive Nb/Al/Al2O3/NbxOy/Au device which consists of an ultra-thin memristive layer (NbxOy) sandwiched between an Al2O3 tunnel barrier and a Schottky-like contact. A highly uniform current distribution for the LRS (low resistance state) and HRS (high resistance state) for areas ranging between 70 μm2 and 2300 μm2 were obtained, which indicates a non-filamentary based resistive switching mechanism. In a detailed experimental and theoretical analysis we show evidence that resistive switching originates from oxygen diffusion and modifications of the local electronic interface states within the NbxOy layer, which influences the interface properties of the Au (Schottky) contact and of the Al2O3 tunneling barrier, respectively. The presented device might offer several benefits like an intrinsic current compliance, improved retention and no need for an electric forming procedure, which is especially attractive for possible applications in highly dense random access memories or neuromorphic mixed signal circuits. PMID:26348823

  10. Barriers to screening mammography.

    PubMed

    Sarma, Elizabeth A

    2015-01-01

    Breast cancer (BRCA) is the second most commonly diagnosed cancer among women in the USA, and mammography is an effective means for the early detection of BRCA. Identifying the barriers to screening mammography can inform research, policy and practice aiming to increase mammography adherence. A literature review was conducted to determine common barriers to screening mammography adherence. PsycINFO and PubMed databases were searched to identify studies published between 2000 and 2012 that examined barriers associated with reduced mammography adherence. Three thematic groups of barriers, based on social ecology, were identified from the literature: healthcare system-level, social and individual-level barriers. Researchers must consider screening behaviour in context and, therefore, should simultaneously consider each level of barriers when attempting to understand screening behaviour and create interventions to increase mammography adherence.

  11. Permanent isolation surface barrier development plan

    SciTech Connect

    Wing, N.R.

    1994-01-01

    The exhumation and treatment of wastes may not always be the preferred alternative in the remediation of a waste site. In-place disposal alternatives, under certain circumstances, may be the most desirable alternatives to use in the protection of human health and the environment. The implementation of an in-place disposal alternative will likely require some type of protective covering that will provide long-term isolation of the wastes from the accessible environment. Even if the wastes are exhumed and treated, a long-term barrier may still be needed to adequately dispose of the treated wastes or any remaining waste residuals. Currently, no {open_quotes}proven{close_quotes} long-term barrier is available. The Hanford Site Permanent Isolation Surface Barrier Development Program (BDP) was organized to develop the technology needed to provide a long-term surface barrier capability for the Hanford Site. The permanent isolation barrier technology also could be used at other sites. Permanent isolation barriers use engineered layers of natural materials to create an integrated structure with redundant protective features. Drawings of conceptual permanent isolation surface barriers are shown. The natural construction materials (e.g., fine soil, sand, gravel, riprap, asphalt) have been selected to optimize barrier performance and longevity. The objective of current designs is to use natural materials to develop a maintenance-free permanent isolation surface barrier that isolates wastes for a minimum of 1,000 years by limiting water drainage to near-zero amounts; reducing the likelihood of plant, animal, and human intrusion; controlling the exhalation of noxious gases; and minimizing erosion-related problems.

  12. Reaction and barrier formation at metal-GaP(110) interfaces

    NASA Astrophysics Data System (ADS)

    Miyano, K. E.; Cao, R.; Kendelewicz, T.; Wahi, A. K.; Lindau, I.; Spicer, W. E.

    1990-01-01

    The interfacial chemistry of Cu, Ag, Au, Ni, Pd, Al, Ga, In, Sn, and Bi deposited on cleaved GaP(110) surfaces has been studied using soft-x-ray photoemission spectroscopy. Of the noble metals, Cu and Au tend to disassociate the GaP, whereas the Ag shows little sign of reactivity with the substrate. The transition metals Ni and Pd react strongly with the GaP to form phosphides in which Ga is segregated. Of the column-III overlayers, Ga and In display strong clustering and little reactivity with the substrate, but the interface with Al shows a cation replacement reaction similar to that seen at Al/GaAs(110). Sn and Bi exhibit Stranski-Krastanov growth, with the establishment of metallic islands on a laminar first monolayer. Despite the differences in reactivity, the barrier heights for all the metals but In are observed to stabilize in the range of 1.14 to 1.46 eV. Hence the n-type GaP barrier height shows a much weaker dependence on the overlayer work function than reported previously. As with GaAs(110) this Fermi-level stabilization position is in the range of both the defect levels as created by irradiation, and the theoretical charge neutrality level toward which metal-induced gap states should move the surface Fermi level. The influence of overlayer reactivity, morphology, and metallicity on the barrier development is discussed in relation to these two potential sources of interface states.

  13. Surface stability test plan for protective barriers

    SciTech Connect

    Ligotke, M.W.

    1989-01-01

    Natural-material protective barriers for long-term isolation of buried waste have been identified as integral components of a plan to isolate a number of Hanford defense waste sites. Standards currently being developed for internal and external barrier performance will mandate a barrier surface layer that is resistant to the eolian erosion processes of wind erosion (deflation) and windborne particle deposition (formation of sand dunes). Thus, experiments are needed to measure rates of eolian erosion processes impacting those surfaces under different surface and climatological conditions. Data from these studies will provide information for use in the evaluation of selected surface layers as a means of providing stable cover over waste sites throughout the design life span of protective barriers. The multi-year test plan described in this plan is directed at understanding processes of wind erosion and windborne particle deposition, providing measurements of erosion rates for models, and suggesting construction materials and methods for reducing the effect of long-term eolian erosion on the barrier. Specifically, this plan describes possible methods to measure rates of eolian erosion, including field and laboratory procedure. Advantages and disadvantages of laboratory (wind tunnel) tests are discussed, and continued wind tunnel tests are recommended for wind erosion studies. A comparison between field and wind tunnel erosive forces is discussed. Plans for testing surfaces are described. Guidance is also presented for studying the processes controlling sand dune and blowout formation. 24 refs., 7 figs., 3 tabs.

  14. Thermal barrier coating system with intermetallic overlay bond coat

    SciTech Connect

    Duderstadt, E.C.; Nagaraj, B A.

    1993-08-24

    A superalloy article is described having a thermal barrier coating system thereon, comprising: a substrate made of a material selected from the group consisting of a nickel-based superalloy and a cobalt-based superalloy; and a thermal barrier coating system on the substrate, the thermal barrier coating system including an intermetallic bond coat overlying the substrate, the bond coat being selected from the group consisting of a nickel aluminide and a platinum aluminide intermetallic compound, a thermally grown aluminum oxide layer overlying the intermetallic bond coat, and a ceramic topcoat overlying the aluminum oxide layer.

  15. Electrical insulator assembly with oxygen permeation barrier

    DOEpatents

    Van Der Beck, R.R.; Bond, J.A.

    1994-03-29

    A high-voltage electrical insulator for electrically insulating a thermoelectric module in a spacecraft from a niobium-1% zirconium alloy wall of a heat exchanger filled with liquid lithium while providing good thermal conductivity between the heat exchanger and the thermoelectric module. The insulator has a single crystal alumina layer (SxAl[sub 2]O[sub 3], sapphire) with a niobium foil layer bonded thereto on the surface of the alumina crystal facing the heat exchanger wall, and a molybdenum layer bonded to the niobium layer to act as an oxygen permeation barrier to preclude the oxygen depleting effects of the lithium from causing undesirable niobium-aluminum intermetallic layers near the alumina-niobium interface. 3 figures.

  16. Electrical insulator assembly with oxygen permeation barrier

    DOEpatents

    Van Der Beck, Roland R.; Bond, James A.

    1994-01-01

    A high-voltage electrical insulator (21) for electrically insulating a thermoelectric module (17) in a spacecraft from a niobium-1% zirconium alloy wall (11) of a heat exchanger (13) filled with liquid lithium (16) while providing good thermal conductivity between the heat exchanger and the thermoelectric module. The insulator (21) has a single crystal alumina layer (SxAl.sub.2 O.sub.3, sapphire) with a niobium foil layer (32) bonded thereto on the surface of the alumina crystal (26) facing the heat exchanger wall (11), and a molybdenum layer (31) bonded to the niobium layer (32) to act as an oxygen permeation barrier to preclude the oxygen depleting effects of the lithium from causing undesirable niobium-aluminum intermetallic layers near the alumina-niobium interface.

  17. Biointrusion test plan for the Permanent Isolation Surface Barrier Prototype

    SciTech Connect

    Link, S.O.; Cadwell, L.L.; Brandt, C.A.; Downs, J.L.; Rossi, R.E.; Gee, G.W.

    1994-04-01

    This document provides a testing and monitoring plan for the biological component of the prototype barrier slated for construction at the Hanford Site. The prototype barrier is an aboveground structure engineered to demonstrate the basic features of an earthen cover system. It is designed to permanently isolate waste from the biosphere. The features of the barrier include multiple layers of soil and rock materials and a low-permeability asphalt sublayer. The surface of the barrier consists of silt loam soil, covered with plants. The barrier sides are reinforced with rock or coarse earthen-fill to protect against wind and water erosion. The sublayers inhibit plant and animal intrusion and percolation of water. A series of tests will be conducted on the prototype barrier over the next several years to evaluate barrier performance under extreme climatic conditions. Plants and animals will play a significant role in the hydrologic and water and wind erosion characteristics of the prototype barrier. Studies on the biological component of the prototype barrier will include work on the initial revegetation of the surface, continued monitoring of the developing plant community, rooting depth and dispersion in the context of biointrusion potential, the role of plants in the hydrology of the surface and toe regions of the barrier, the role of plants in stabilizing the surface against water and wind erosion, and the role of burrowing animals in the hydrology and water and wind erosion of the barrier.

  18. Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1- x(001) and SixGe1- x(110).

    PubMed

    Edmonds, Mary; Sardashti, Kasra; Wolf, Steven; Chagarov, Evgueni; Clemons, Max; Kent, Tyler; Park, Jun Hong; Tang, Kechao; McIntyre, Paul C; Yoshida, Naomi; Dong, Lin; Holmes, Russell; Alvarez, Daniel; Kummel, Andrew C

    2017-02-07

    Atomic layer deposition of a silicon rich SiNx layer on Si0.7Ge0.3(001), Si0.5Ge0.5(001), and Si0.5Ge0.5(110) surfaces has been achieved by sequential pulsing of Si2Cl6 and N2H4 precursors at a substrate temperature of 285 °C. XPS spectra show a higher binding energy shoulder peak on Si 2p indicative of SiOxNyClz bonding while Ge 2p and Ge 3d peaks show only a small amount of higher binding energy components consistent with only interfacial bonds, indicating the growth of SiOxNy on the SiGe surface with negligible subsurface reactions. Scanning tunneling spectroscopy measurements confirm that the SiNx interfacial layer forms an electrically passive surface on p-type Si0.70Ge0.30(001), Si0.50Ge0.50(110), and Si0.50Ge0.50(001) substrates as the surface Fermi level is unpinned and the electronic structure is free of states in the band gap. DFT calculations show that a Si rich a-SiO0.4N0,4 interlayer can produce lower interfacial defect density than stoichiometric a-SiO0.8N0.8, substoichiometric a-Si3N2, or stoichiometric a-Si3N4 interlayers by minimizing strain and bond breaking in the SiGe by the interlayer. Metal-oxide-semiconductor capacitors devices were fabricated on p-type Si0.7Ge0.3(001) and Si0.5Ge0.5(001) substrates with and without the insertion of an ALD SiOxNy interfacial layer, and the SiOxNy layer resulted in a decrease in interface state density near midgap with a comparable Cmax value.

  19. Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1- x(001) and SixGe1- x(110)

    NASA Astrophysics Data System (ADS)

    Edmonds, Mary; Sardashti, Kasra; Wolf, Steven; Chagarov, Evgueni; Clemons, Max; Kent, Tyler; Park, Jun Hong; Tang, Kechao; McIntyre, Paul C.; Yoshida, Naomi; Dong, Lin; Holmes, Russell; Alvarez, Daniel; Kummel, Andrew C.

    2017-02-01

    Atomic layer deposition of a silicon rich SiNx layer on Si0.7Ge0.3(001), Si0.5Ge0.5(001), and Si0.5Ge0.5(110) surfaces has been achieved by sequential pulsing of Si2Cl6 and N2H4 precursors at a substrate temperature of 285 °C. XPS spectra show a higher binding energy shoulder peak on Si 2p indicative of SiOxNyClz bonding while Ge 2p and Ge 3d peaks show only a small amount of higher binding energy components consistent with only interfacial bonds, indicating the growth of SiOxNy on the SiGe surface with negligible subsurface reactions. Scanning tunneling spectroscopy measurements confirm that the SiNx interfacial layer forms an electrically passive surface on p-type Si0.70Ge0.30(001), Si0.50Ge0.50(110), and Si0.50Ge0.50(001) substrates as the surface Fermi level is unpinned and the electronic structure is free of states in the band gap. DFT calculations show that a Si rich a-SiO0.4N0,4 interlayer can produce lower interfacial defect density than stoichiometric a-SiO0.8N0.8, substoichiometric a-Si3N2, or stoichiometric a-Si3N4 interlayers by minimizing strain and bond breaking in the SiGe by the interlayer. Metal-oxide-semiconductor capacitors devices were fabricated on p-type Si0.7Ge0.3(001) and Si0.5Ge0.5(001) substrates with and without the insertion of an ALD SiOxNy interfacial layer, and the SiOxNy layer resulted in a decrease in interface state density near midgap with a comparable Cmax value.

  20. New electrode-barrier structures for high density ferroelectric memories

    NASA Astrophysics Data System (ADS)

    Vedula, R.; Desu, C. S.; Tirumala, S.; Bhatt, H. D.; Desu, S. B.; Lee, K. B.

    2001-03-01

    In this paper, two electrode-barrier structures based on Pt-Rh and Pt-Ir alloys and their oxides are proposed for high-density ferroelectric memory applications. These electrode-barriers are multi-layered, comprising a diffusion barrier (PtRhOx or PtIrOx), metal alloy (PtRh or PtIr) and another PtRhOx or PtIrOx layer for fatigue reduction in the case of PZT capacitors. Both lead zirconate titanate (PZT) and strontium bismuth tantalate (SBT) capacitors based on the electrode-barriers were used in the present study. The electrode-barrier structure acts as a conducting electrode as well as an excellent diffusion barrier for lead, bismuth, oxygen and silicon. The PZT test capacitors fabricated on these electrode-barriers showed excellent fatigue resistance with other ferroelectric properties being similar to those on Pt. Also, these electrode-barriers are stable, and remain conductive even up to the processing temperatures of SBT (750 °C). This makes direct integration of both PZT and SBT capacitors on to a poly-Si plug attainable. In addition, the conducting electrode-barrier structures can be deposited in situ, directly over n+polycrystalline Si, thereby significantly improving the density of the device.

  1. MgGa2O4 spinel barrier for magnetic tunnel junctions: Coherent tunneling and low barrier height

    NASA Astrophysics Data System (ADS)

    Sukegawa, Hiroaki; Kato, Yushi; Belmoubarik, Mohamed; Cheng, P.-H.; Daibou, Tadaomi; Shimomura, Naoharu; Kamiguchi, Yuuzo; Ito, Junichi; Yoda, Hiroaki; Ohkubo, Tadakatsu; Mitani, Seiji; Hono, Kazuhiro

    2017-03-01

    Epitaxial Fe/magnesium gallium spinel oxide (MgGa2O4)/Fe(001) magnetic tunnel junctions (MTJs) were fabricated by magnetron sputtering. A tunnel magnetoresistance (TMR) ratio up to 121% at room temperature (196% at 4 K) was observed, suggesting a TMR enhancement by the coherent tunneling effect in the MgGa2O4 barrier. The MgGa2O4 layer had a spinel structure and it showed good lattice matching with the Fe layers owing to slight tetragonal lattice distortion of MgGa2O4. Barrier thickness dependence of the tunneling resistance and current-voltage characteristics revealed that the height of the MgGa2O4 barrier is much lower than that of an MgAl2O4 barrier. This study demonstrates the potential of Ga-based spinel oxides for MTJ barriers having a large TMR ratio at a low resistance area product.

  2. Transforming Education: Overcoming Barriers.

    ERIC Educational Resources Information Center

    David, Jane L.; Goren, Paul D.

    Barriers to progress in educational reform exist inside and outside the education system. Some arise where new practices encounter traditional expectations and boundaries, but others go much deeper than education, such as poverty, racism, local political conflicts, and human resistance to change. The following five categories of barriers are…

  3. OVERCOMING CULTURAL BARRIERS.

    ERIC Educational Resources Information Center

    BARRUTIA, RICHARD

    THE RELATIONSHIP OF LANGUAGE DEVELOPMENT TO CULTURAL BARRIERS AND THE TEACHING OF FOREIGN LANGUAGES IS DISCUSSED IN THIS ARTICLE. VARIOUS VIEWS OF THE MEANING OF CULTURE ARE MENTIONED IN ORDER TO SINGLE OUT ANTHROPOLOGICAL CULTURE AS A MAIN FOCAL POINT. INTERCULTURAL DIFFERENCES ARE SPELLED OUT WITH EXAMPLES OF LINGUISTIC BARRIERS, AND…

  4. Liquid metal hydrogen barriers

    DOEpatents

    Grover, George M.; Frank, Thurman G.; Keddy, Edward S.

    1976-01-01

    Hydrogen barriers which comprise liquid metals in which the solubility of hydrogen is low and which have good thermal conductivities at operating temperatures of interest. Such barriers are useful in nuclear fuel elements containing a metal hydride moderator which has a substantial hydrogen dissociation pressure at reactor operating temperatures.

  5. Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier

    DOEpatents

    Carlson, David E.; Wronski, Christopher R.

    1979-01-01

    A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.

  6. High voltage, high current Schottky barrier solar cell

    NASA Technical Reports Server (NTRS)

    Stirn, R. J. (Inventor)

    1977-01-01

    A Schottky barrier solar cell was described, which consists of a layer of wide band gap semiconductor material on which a very thin film of semitransparent metal was deposited to form a Schottky barrier. The layer of the wide band gap semiconductor material is on top of a layer of narrower band gap semiconductor material, to which one of the cell's contacts may be attached directly or through a substrate. The cell's other contact is a grid structure which is deposited on the thin metal film.

  7. GaAs Schottky barrier photo-responsive device and method of fabrication

    NASA Technical Reports Server (NTRS)

    Alcorn, G. E.; Leinkram, C. Z.; Okunola, O. (Inventor)

    1985-01-01

    A gallium arsenide photo-responsive device is provided with an intermediate, transparent layer of a refractory metal or alkaline earth metal forming a tenacious bond between a non-hydroscopic oxide layer and a noble metal Schottky barrier layer. The device has a gallium arsenide substrate with a predetermined type conductivity and a gallium arsenide epitaxial layer with the same type conductivity but a lower charge carrier concentration grown on the substrate. The oxide layer is formed to cover the epitaxial layer, and the transparent metal layer followed by the noble metal layer are deposited upon the oxide layer. An interdigitated ohmic contact is then formed upon the noble metal layer.

  8. Controlled Thermal Expansion Coat for Thermal Barrier Coatings

    NASA Technical Reports Server (NTRS)

    Brindley, William J. (Inventor); Miller, Robert A. (Inventor); Aikin, Beverly J. M. (Inventor)

    1999-01-01

    A improved thermal barrier coating and method for producing and applying such is disclosed herein. The thermal barrier coating includes a high temperature substrate, a first bond coat layer applied to the substrate of MCrAlX, and a second bond coat layer of MCrAlX with particles of a particulate dispersed throughout the MCrAlX and the preferred particulate is Al2O3. The particles of the particulate dispersed throughout the second bond coat layer preferably have a diameter of less then the height of the peaks of the second bond coat layer, or a diameter of less than 5 microns. The method of producing the second bond coat layer may either include the steps of mechanical alloying of particles throughout the second bond coat layer, attrition milling the particles of the particulate throughout the second bond coat layer, or using electrophoresis to disperse the particles throughout the second bond coat layer. In the preferred embodiment of the invention, the first bond coat layer is applied to the substrate, and then the second bond coat layer is thermally sprayed onto the first bond coat layer. Further, in a preferred embodiment of die invention, a ceramic insulating layer covers the second bond coat layer.

  9. Retractable barrier strip

    DOEpatents

    Marts, Donna J.; Barker, Stacey G.; Wowczuk, Andrew; Vellenoweth, Thomas E.

    2002-01-01

    A portable barrier strip having retractable tire-puncture spikes for puncturing a vehicle tire. The tire-puncture spikes have an armed position for puncturing a tire and a retracted position for not puncturing a tire. The strip comprises a plurality of barrier blocks having the tire-puncture spikes removably disposed in a shaft that is rotatably disposed in each barrier block. The plurality of barrier blocks hare hingedly interconnected by complementary hinges integrally formed into the side of each barrier block which allow the strip to be rolled for easy storage and retrieval, but which prevent irregular or back bending of the strip. The shafts of adjacent barrier blocks are pivotally interconnected via a double hinged universal joint to accommodate irregularities in a roadway surface and to transmit torsional motion of the shaft from block to block. A single flexshaft cable is connected to the shaft of an end block to allow a user to selectively cause the shafts of a plurality of adjacently connected barrier blocks to rotate the tire-puncture spikes to the armed position for puncturing a vehicle tire, and to the retracted position for not puncturing the tire. The flexshaft is provided with a resiliently biased retracting mechanism, and a release latch for allowing the spikes to be quickly retracted after the intended vehicle tire is punctured.

  10. Vehicle barrier systems

    SciTech Connect

    Sena, P.A.

    1986-01-01

    The ground vehicle is one of the most effective tools available to an adversary force. Vehicles can be used to penetrate many types of perimeter barriers, transport equipment and personnel rapidly over long distances, and deliver large amounts of explosives directly to facilities in suicide missions. The function of a vehicle barrier system is to detain or disable a defined threat vehicle at a selected distance from a protected facility. Numerous facilities are installing, or planning to install, vehicle barrier systems and many of these facilities are requesting guidance to do so adequately. Therefore, vehicle barriers are being evaluated to determine their stopping capabilities so that systems can be designed that are both balanced and capable of providing a desired degree of protection. Equally important, many of the considerations that should be taken into account when establishing a vehicle barrier system have been identified. These considerations which pertain to site preparation, barrier selection, system integration and operation, and vehicle/barrier interaction, are discussed in this paper. 2 tabs.

  11. Vehicle barrier systems

    SciTech Connect

    Sena, P.A.

    1986-01-01

    The ground vehicle is one of the most effective tools available to an adversary force. Vehicles can be used to penetrate many types of perimeter barriers, transport equipment, and personnel rapidly over long distances, and deliver large amounts of explosives directly to facilities in suicide missions. The function of a vehicle barrier system is to detain or disable a defined threat vehicle at a selected distance from a protected facility. Numerous facilities are installing, or planning to install, vehicle barrier systems and many of these facilities are requesting guidance to do so adequately. Therefore, vehicle barriers are being evaluated to determine their stopping capabilities so that systems can be designed that are both balanced and capable of providing a desired degree of protection. Equally important, many of the considerations that should be taken into account when establishing a vehicle barrier system have been identified. These considerations which pertain to site preparation, barrier selection, system integration and operation, and vehicle/barrier interaction, are discussed in this paper.

  12. Vehicle barrier systems

    SciTech Connect

    Sena, P.A.

    1986-01-01

    The ground vehicle is one of the most effective tools available to an adversary force. Vehicles can be used to penetrate many types of perimeter barriers, transport equipment and personnel rapidly over long distances, and deliver large amounts of explosives directly to facilities in suicide missions. The function of a vehicle barrier system is to detain or disable a defined threat vehicle at a selected distance from a protected facility. Numerous facilities are installing, or planning to install, vehicle barrier systems and many of these facilities are requesting guidance to do so adequately. Therefore, vehicle barriers are being evaluated to determine their stopping capabilities so that systems can be designed that are both balanced and capable of providing a desired degree of protection. Equally important, many of the considerations that should be taken into account when establishing a vehicle barrier system have been identified. These considerations which pertain to site preparation, barrier selection, system integration and operation, and vehicle/barrier interaction, are discussed in this paper.

  13. Counseling for barrier methods.

    PubMed

    Guest, F

    1979-08-01

    Despite the less serious risks of barrier methods (diaphragm, condom, foam, and other vaginal spermicides) compared with other contraceptive methods, many family planning programs find that only a minority of patients accept barrier methods as primary contraceptive choices. Some misconceptions patients have about barrier methods are: 1) they are less effective compared to oral contraceptives or IUDs, 2) foam kills sperm that are still inside a man's body, and 3) you need a prescription to use a barrier method. This article provides the following information about barrier methods to use in counseling patients: 1) couples who use barriers exactly right all the time can achieve high levels of effectiveness; average effectiveness rates for longterm users are 87% for the diaphragm, 90% for condoms, and 85% for foam; 2) noncontraceptive benefits include protection against sexually transmitted infections; barrier methods are nonhormonal and nonsurgical and posters to that effect are recommended for the counselor's waiting room; 3) patients need to be encouraged to use barrier methods even though they are less convenient in certain situations; support groups could improve patients' success; 4) counselors may be able to help users by giving them permission not to use the method on certain cycle days as a tradeoff for diligent use at other times thereby relieving the contraceptive burden; 5) recurring problems that patients should be warned about include waiting too late to put on a condom, running out of foam, using too little cream with the diaphragm, and douching after intercourse; and 6) improper care and storage problems which could cause failure are storing latex near heat, separating the foam bottle from the applicator, using old condoms and diaphragms, and suppositories that fail to melt. Patients' 2 biggest complaints about vaginal suppositories are messiness and irritation and switching to condoms can help. The last page of the article is a one page handout for

  14. Recycler barrier RF buckets

    SciTech Connect

    Bhat, C.M.; /Fermilab

    2011-03-01

    The Recycler Ring at Fermilab uses a barrier rf systems for all of its rf manipulations. In this paper, I will give an overview of historical perspective on barrier rf system, the longitudinal beam dynamics issues, aspects of rf linearization to produce long flat bunches and methods used for emittance measurements of the beam in the RR barrier rf buckets. Current rf manipulation schemes used for antiproton beam stacking and longitudinal momentum mining of the RR beam for the Tevatron collider operation are explained along with their importance in spectacular success of the Tevatron luminosity performance.

  15. Gut barrier in health and disease: focus on childhood.

    PubMed

    Viggiano, D; Ianiro, G; Vanella, G; Bibbò, S; Bruno, G; Simeone, G; Mele, G

    2015-01-01

    The gut barrier is a functional unit, organized as a multi-layer system, made up of two main components: a physical barrier surface, which prevents bacterial adhesion and regulates paracellular diffusion to the host tissues, and a deep functional barrier, that is able to discriminate between pathogens and commensal microorganisms, organizing the immune tolerance and the immune response to pathogens. Other mechanisms, such as gastric juice and pancreatic enzymes (which both have antibacterial properties) participate in the luminal integrity of the gut barrier. From the outer layer to the inner layer, the physical barrier is composed of gut microbiota (that competes with pathogens to gain space and energy resources, processes the molecules necessary to mucosal integrity and modulates the immunological activity of deep barrier), mucus (which separates the intraluminal content from more internal layers and contains antimicrobial products and secretory IgA), epithelial cells (which form a physical and immunological barrier) and the innate and adaptive immune cells forming the gut-associated lymphoid tissue (which is responsible for antigen sampling and immune responses). Disruption of the gut barrier has been associated with many gastrointestinal diseases, but also with extra-intestinal pathological condition, such as type 1 diabetes mellitus, allergic diseases or autism spectrum disorders. The maintenance of a healthy intestinal barrier is therefore of paramount importance in children, for both health and economic reasons. Many drugs or compounds used in the treatment of gastrointestinal disorders act through the restoration of a normal intestinal permeability. Several studies have highlighted the role of probiotics in the modulation and reduction of intestinal permeability, considering the strong influence of gut microbiota in the modulation of the function and structure of gut barrier, but also on the immune response of the host. To date, available weapons for the

  16. The role of plants on isolation barrier systems

    SciTech Connect

    Link, S.O.; Downs, J.L.; Waugh, W.J.

    1994-11-01

    Surface barriers are used to isolate buried wastes from the environment. Most have been built for short-term isolation. The need to isolate radioactive wastes from the environment requires that the functional integrity of a barrier be maintained for thousands of years. Barrier function strongly depends on vegetation. Plants reduce wind and water erosion and minimize drainage, but may transport contaminants if roots extend into buried wastes. Our review of the function of plants on surface barriers focuses on the role of plants across mesic to arid environments and gives special consideration to studies done at Hanford. The Hanford Barrier Development Program was created to design and test an earthen cover system to inhibit water infiltration, plant and animal intrusion, and wind and water erosion, while isolating buried wastes for at least 1000 years. Studies at the Hanford have shown that plants will significantly interact with the barrier. Plants transpire soil water back into the atmosphere. Deep-rooted perennials best recycle water; soil water may drain through the root zone of shallow-rooted annuals. Lysimeter studies indicate that a surface layer of fine soil with deep-rooted plants precludes drainage even with three times normal precipitation. The presence of vegetation greatly reduces water and wind erosion, but deep-rooted plants pose a threat of biointrusion and contaminant transport. The Hanford barrier includes a buried rock layer and asphalt layer to prevent biointrusion.

  17. All-optical amplitude-phase transmultiplexing of RZ-OOK and RZ-BPSK to RZ-QPSK by polarization-insensitive XPM using a nonlinear birefringent AlGaAs waveguide.

    PubMed

    Cannon, B M; Mahmood, T; Astar, W; Apiratikul, P; Porkolab, G; Boudra, P; Mohsenin, T; Richardson, C J K; Carter, G M

    2013-08-26

    Polarization-insensitive (PI) phase-transmultiplexing (PTM) of a 10-Gb/s return-to-zero ON-OFF keying (RZ-OOK) pump and a 10-Gb/s RZbinary phase-shift keying (RZ-BPSK) probe to 20-Gb/s RZ-quadrature-PSK (RZ-QPSK) has been successfully demonstrated for the first time in a passive, birefringent AlGaAs waveguide, utilizing PI cross-phase modulation (PI-XPM). For differential QPSK (DQPSK)-detection, a 10 − 9-BER pre-amplified receiver sensitivity penalty of ≈ 2.5 dB for the in-phase component and ≈ 4.9 dB for the quadrature component were found. The penalties were relative to the FPGA-precoded RZ-DQPSK baseline for a pump-probe detuning of ≈ 12 nm, when the probe state of polarization was scrambled and the pump was launched off-axis into the waveguide.

  18. Breakdown and Protection of ALD Moisture Barrier Thin Films.

    PubMed

    Nehm, Frederik; Klumbies, Hannes; Richter, Claudia; Singh, Aarti; Schroeder, Uwe; Mikolajick, Thomas; Mönch, Tobias; Hoßbach, Christoph; Albert, Matthias; Bartha, Johann W; Leo, Karl; Müller-Meskamp, Lars

    2015-10-14

    The water vapor barrier properties of low-temperature atomic layer deposited (ALD) AlOx thin-films are observed to be unstable if exposed directly to high or even ambient relative humidities. Upon exposure to humid atmospheres, their apparent barrier breaks down and their water vapor transmission rates (WVTR), measured by electrical calcium tests, deteriorate by several orders of magnitude. These changes are accompanied by surface roughening beyond the original thickness, observed by atomic force microscopy. X-ray reflectivity investigations show a strong decrease in density caused by only 5 min storage in a 38 °C, 90% relative humidity climate. We show that barrier stabilities required for device applications can be achieved by protection layers which prevent the direct contact of water condensing on the surface, i.e., the sensitive ALD barrier. Nine different protection layers of either ALD materials or polymers are tested on the barriers. Although ALD materials prove to be ineffective, applied polymers seem to provide good protection independent of thickness, surface free energy, and deposition technique. A glued-on PET foil stands out as a low-cost, easily processed, and especially stable solution. This way, 20 nm single layer ALD barriers for organic electronics are measured. They yield reliable WVTRs down to 2×10(-5) g(H2O) m(-2) day(-1) at 38 °C and 90% relative humidity, highlighting the great potential of ALD encapsulation.

  19. Thermal barrier coating having high phase stability

    DOEpatents

    Subramanian, Ramesh

    2002-01-01

    A device (10) comprising a substrate (22) having a deposited ceramic thermal barrier coating characterized by a microstructure having gaps (28) where the thermal barrier coating comprises a first thermal barrier layer (40), and a second thermal barrier layer (30) with a pyrochlore crystal structure having a chemical formula of A.sup.n+.sub.2-x B.sup.m+.sub.2+x O.sub.7-y, where A is selected from the group of elements consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and mixtures thereof, where B is selected from the group of elements consisting of Zr, Hf, Ti and mixtures thereof, where n and m are the valence of A and B respectively, and for -0.5.ltoreq.x.ltoreq.0.5, ##EQU1## and excluding the following combinations for x=0, y=0: A=La and B=Zr; A=La and B=Hf; A=Gd and B=Hf; and A=Yb and B=Ti.

  20. Optimistic barrier synchronization

    NASA Technical Reports Server (NTRS)

    Nicol, David M.

    1992-01-01

    Barrier synchronization is fundamental operation in parallel computation. In many contexts, at the point a processor enters a barrier it knows that it has already processed all the work required of it prior to synchronization. The alternative case, when a processor cannot enter a barrier with the assurance that it has already performed all the necessary pre-synchronization computation, is treated. The problem arises when the number of pre-sychronization messages to be received by a processor is unkown, for example, in a parallel discrete simulation or any other computation that is largely driven by an unpredictable exchange of messages. We describe an optimistic O(log sup 2 P) barrier algorithm for such problems, study its performance on a large-scale parallel system, and consider extensions to general associative reductions as well as associative parallel prefix computations.

  1. [Vascular endothelial Barrier Function].

    PubMed

    Ivanov, A N; Puchinyan, D M; Norkin, I A

    2015-01-01

    Endothelium is an important regulator of selective permeability of the vascular wall for different molecules and cells. This review summarizes current data on endothelial barrier function. Endothelial glycocalyx structure, its function and role in the molecular transport and leukocytes migration across the endothelial barrier are discussed. The mechanisms of transcellular transport of macromolecules and cell migration through endothelial cells are reviewed. Special section of this article addresses the structure and function of tight and adherens endothelial junction, as well as their importance for the regulation of paracellular transport across the endothelial barrier. Particular attention is paid to the signaling mechanism of endothelial barrier function regulation and the factors that influence on the vascular permeability.

  2. Great Barrier Reef

    Atmospheric Science Data Center

    2013-04-16

    article title:  Australia's Great Barrier Reef     View Larger Image ... reef, but a vast maze of reefs, passages, and coral cays (islands that are part of the reef). This nadir true-color image was acquired by ...

  3. Barrier Island Hazard Mapping.

    ERIC Educational Resources Information Center

    Pilkey, Orrin H.; Neal, William J.

    1980-01-01

    Describes efforts to evaluate and map the susceptibility of barrier islands to damage from storms, erosion, rising sea levels and other natural phenomena. Presented are criteria for assessing the safety and hazard potential of island developments. (WB)

  4. Plastic Schottky-barrier solar cells

    DOEpatents

    Waldrop, J.R.; Cohen, M.J.

    1981-12-30

    A photovoltaic cell structure is fabricated from an active medium including an undoped polyacetylene, organic semiconductor. When a film of such material is in rectifying contact with a metallic area electrode, a Schottky-barrier junction is obtained within the body of the cell structure. Also, a gold overlayer passivates a magnesium layer on the undoped polyacetylene film. With the proper selection and location of elements a photovoltaic cell structure and solar cell are obtained.

  5. Retractable barrier strip

    DOEpatents

    Marts, D.J.; Barker, S.G.; McQueen, M.A.

    1996-04-16

    A portable barrier strip is described having retractable tire-puncture means for puncturing a vehicle tire. The tire-puncture means, such as spikes, have an armed position for puncturing a tire and a retracted position for not puncturing a tire. The strip comprises a plurality of barrier blocks having the tire-puncture means removably disposed in a shaft that is rotatably disposed in each barrier block. The shaft removably and pivotally interconnects the plurality of barrier blocks. Actuation cables cause the shaft to rotate the tire-puncture means to the armed position for puncturing a vehicle tire and to the retracted position for not puncturing the tire. Each tire-puncture means is received in a hollow-bed portion of its respective barrier block when in the retracted position. The barrier strip rests in its deployed position and substantially motionless as a tire rolls thereon and over. The strip is rolled up for retrieval, portability, and storage purposes, and extended and unrolled in its deployed position for use. 13 figs.

  6. Retractable barrier strip

    DOEpatents

    Marts, Donna J.; Barker, Stacey G.; McQueen, Miles A.

    1996-01-01

    A portable barrier strip having retractable tire-puncture means for puncturing a vehicle tire. The tire-puncture means, such as spikes, have an armed position for puncturing a tire and a retracted position for not puncturing a tire. The strip comprises a plurality of barrier blocks having the tire-puncture means removably disposed in a shaft that is rotatably disposed in each barrier block. The shaft removably and pivotally interconnects the plurality of barrier blocks. Actuation cables cause the shaft to rotate the tire-puncture means to the armed position for puncturing a vehicle tire and to the retracted position for not puncturing the tire. Each tire-puncture means is received in a hollow-bed portion of its respective barrier block when in the retracted position. The barrier strip rests stable in its deployed position and substantially motionless as a tire rolls thereon and over. The strip is rolled up for retrieval, portability, and storage purposes, and extended and unrolled in its deployed position for use.

  7. Methods for fabricating a micro heat barrier

    DOEpatents

    Marshall, Albert C.; Kravitz, Stanley H.; Tigges, Chris P.; Vawter, Gregory A.

    2004-01-06

    Methods for fabricating a highly effective, micron-scale micro heat barrier structure and process for manufacturing a micro heat barrier based on semiconductor and/or MEMS fabrication techniques. The micro heat barrier has an array of non-metallic, freestanding microsupports with a height less than 100 microns, attached to a substrate. An infrared reflective membrane (e.g., 1 micron gold) can be supported by the array of microsupports to provide radiation shielding. The micro heat barrier can be evacuated to eliminate gas phase heat conduction and convection. Semi-isotropic, reactive ion plasma etching can be used to create a microspike having a cusp-like shape with a sharp, pointed tip (<0.1 micron), to minimize the tip's contact area. A heat source can be placed directly on the microspikes. The micro heat barrier can have an apparent thermal conductivity in the range of 10.sup.-6 to 10.sup.-7 W/m-K. Multiple layers of reflective membranes can be used to increase thermal resistance.

  8. Numerical investigation of dielectric barrier discharges

    NASA Astrophysics Data System (ADS)

    Li, Jing

    1997-12-01

    A dielectric barrier discharge (DBD) is a transient discharge occurring between two electrodes in coaxial or planar arrangements separated by one or two layers of dielectric material. The charge accumulated on the dielectric barrier generates a field in a direction opposite to the applied field. The discharge is quenched before an arc is formed. It is one of the few non-thermal discharges that operates at atmospheric pressure and has the potential for use in pollution control. In this work, a numerical model of the dielectric barrier discharge is developed, along with the numerical approach. Adaptive grids based on the charge distribution is used. A self-consistent method is used to solve for the electric field and charge densities. The Successive Overrelaxation (SOR) method in a non-uniform grid spacing is used to solve the Poisson's equation in the cylindrically-symmetric coordinate. The Flux Corrected Transport (FCT) method is modified to solve the continuity equations in the non-uniform grid spacing. Parametric studies of dielectric barrier discharges are conducted. General characteristics of dielectric barrier discharges in both anode-directed and cathode-directed streamer are studied. Effects of the dielectric capacitance, the applied field, the resistance in external circuit and the type of gases (O2, air, N2) are investigated. We conclude that the SOR method in an adaptive grid spacing for the solution of the Poisson's equation in the cylindrically-symmetric coordinate is convergent and effective. The dielectric capacitance has little effect on the g-factor of radical production, but it determines the strength of the dielectric barrier discharge. The applied field and the type of gases used have a significant role on the current peak, current pulse duration and radical generation efficiency, discharge strength, and microstreamer radius, whereas the external series resistance has very little effect on the streamer properties. The results are helpful in

  9. Reprint of "Mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers - grown on GaAs, using an interfacial misfit array, and on native GaSb"

    NASA Astrophysics Data System (ADS)

    Craig, A. P.; Marshall, A. R. J.; Tian, Z.-B.; Krishna, S.

    2015-05-01

    InAsSb-based nBn photodetectors were fabricated on GaAs, using the interfacial misfit (IMF) array growth mode, and on native GaSb. At -0.1 V operating bias, 200 K dark current densities of 1.4 × 10-5 A cm-2 (on GaAs) and 4.8 × 10-6 A cm-2 (on GaSb) were measured. At the same temperature, specific detectivity (D*) figures of 1.2 × 1010 Jones (on GaAs) and 7.2 × 1010 Jones (on GaSb) were calculated. Arrhenius plots of the dark current densities yielded activation energies of 0.37 eV (on GaAs) and 0.42 eV (on GaSb). These values are close to the 4 K bandgap of the absorption layers (0.32-0.35 eV) indicating diffusion limited dark currents and small valence band offsets. Significantly, these devices could be used for mid-infrared focal plane arrays operating within the temperature range of cost-effective thermoelectric coolers.

  10. Apparatus and method of manufacture for an imager equipped with a cross-talk barrier

    NASA Technical Reports Server (NTRS)

    Pain, Bedabrata (Inventor)

    2012-01-01

    An imager apparatus and associated starting material are provided. In one embodiment, an imager is provided including a silicon layer of a first conductivity type acting as a junction anode. Such silicon layer is adapted to convert light to photoelectrons. Also included is a semiconductor well of a second conductivity type formed in the silicon layer for acting as a junction cathode. Still yet, a barrier is formed adjacent to the semiconductor well. In another embodiment, a starting material is provided including a first silicon layer and an oxide layer disposed adjacent to the first silicon layer. Also included is a second silicon layer disposed adjacent to the oxide layer opposite the first silicon layer. Such second silicon layer is further equipped with an associated passivation layer and/or barrier.

  11. Bragg Reflector-Induced Increased Nonradiative Lifetime in Gallium Arsenide (GaAs)/Aluminum Gallium Arsenide (AlGaAs) Double Heterostructures

    DTIC Science & Technology

    2015-09-01

    the substrate and the DHs increases the GaAs nonradiative lifetime. The fractional increase in the nonradiative lifetime varies with the MBE growth ...photon recycling effects. However, the effect of the growth of the BR on the deep level trap density of the GaAs active layer that determines the...immediately after excitation at a low intensity, low-injection regime conditions 4 exist and a single exponential decay is observed. The

  12. Novel tunnelling barriers for spin tunnelling junctions

    NASA Astrophysics Data System (ADS)

    Sharma, Manish

    A tunnel junction consists of two metal electrodes separated by an insulating barrier thin enough for electrons to tunnel across. With ferromagnetic electrodes, a spin-dependent tunnelling (SDT) effect, electrons of one spin tunnelling preferentially over those of the other, is observed. When the electrodes are switched from a parallel to an anti-parallel alignment, the tunnelling current changes and gives rise to tunnelling magnetoresistance (TMR). Since 1995, interest in SDT junctions has increased as TMR in excess of 15% has been achieved, making viable their use in non-volatile memory and magnetic sensors applications. In this work, two key issues of SDT junctions are addressed: spin polarization of the electrode and the tunnel barrier. Spin polarization, a measure of electron states of up and down spins, is widely believed to be an intrinsic property of the electrode. In junctions with barriers formed by plasma oxidation of composite Ta/Al films, the surprising effect of the resistance being lower with the electrodes aligned antiparallel was observed. Junctions with Ta/Al barriers and those with Al/Ta barriers behave opposite to each other and exhibit an inversion only when the Ta side of the barrier is biased positive. This demonstrates the spin polarization is also influenced by the barrier material. Half-metallic materials such as magnetite (Fe3O4) have a gap in one of the spins' states at the fermi level, thus having a theoretical spin polarization of 100%. In this work, an ultrathin Fe3O 4 layer was added between the Al2O3 barrier and the NiFe electrode. The TMR increased sharply from 4% to 16% for thicknesses less than 0.5nm. As the tunnel barrier must be thinner than 2nm, choice of the barrier material becomes critical. Presently, Al2O3 is the best known barrier. In looking for alternative materials, AlN and AlON were formed by plasma nitridation and oxy-nitridation of deposited Al films. TMR results of up to 18% and resistance-area products down to 3

  13. InGaP Heterojunction Barrier Solar Cells

    NASA Technical Reports Server (NTRS)

    Welser, Roger E. (Inventor)

    2014-01-01

    A new solar cell structure called a heterojunction barrier solar cell is described. As with previously reported quantum-well and quantum-dot solar cell structures, a layer of narrow band-gap material, such as GaAs or indium-rich InGaP, is inserted into the depletion region of a wide band-gap PN junction. Rather than being thin, however, the layer of narrow band-gap material is about 400-430 nm wide and forms a single, ultrawide well in the depletion region. Thin (e.g., 20-50 nm), wide band-gap InGaP barrier layers in the depletion region reduce the diode dark current. Engineering the electric field and barrier profile of the absorber layer, barrier layer, and p-type layer of the PN junction maximizes photogenerated carrier escape. This new twist on nanostructured solar cell design allows the separate optimization of current and voltage to maximize conversion efficiency.

  14. The formation mechanism of aluminum oxide tunnel barriers.

    SciTech Connect

    Cerezo, A.; Petford-Long, A. K.; Larson, D. J.; Pinitsoontorn, S.; Singleton, E. W.; Materials Science Division; Univ. Oxford; Seagate Tech.

    2006-01-01

    The functional properties of magnetic tunnel junctions are critically dependant on the nanoscale morphology of the insulating barrier (usually only a few atomic layers thick) that separates the two ferromagnetic layers. Three-dimensional atom probe analysis has been used to study the chemistry of a magnetic tunnel junction structure comprising an aluminium oxide barrier formed by in situ oxidation, both in the under-oxidized and fully oxidized states and before and after annealing. Low oxidation times result in discrete oxide islands. Further oxidation leads to a more continuous, but still non-stoichiometric, barrier with evidence that oxidation proceeds along the top of grain boundaries in the underlying CoFe layer. Post-deposition annealing leads to an increase in the barrier area, but only in the case of the fully oxidized and annealed structure is a continuous planar layer formed, which is close to the stoichiometric Al:O ratio of 2:3. These results are surprising, in that the planar layers are usually considered unstable with respect to breaking up into separate islands. Analysis of the various driving forces suggests that the formation of a continuous layer requires a combination of factors, including the strain energy resulting from the expansion of the oxide during internal oxidation on annealing.

  15. Natural laminar-turbulent transition delay by dielectric barrier discharge

    NASA Astrophysics Data System (ADS)

    Ustinov, Maxim; Kogan, Mikhail; Litvinov, Vladimir; Uspensky, Alexander

    2011-12-01

    The use dielectric barrier discharge for the delay of laminar turbulent transition excited by natural flow disturbances in a quiet wind-tunnel was investigated experimentally. Optimal electrodes location and the operational regime of high-voltage impulse generator provided maximal downstream shift of transition location were found. It was demonstrated that the 10% increase of the laminar part of boundary layer can be obtained using barrier discharge with the cross-flow electrodes. This gives up to 20% friction drag reduction.

  16. Method of installing subsurface barrier

    SciTech Connect

    Nickelson, Reva A.; Richardson, John G.; Kostelnik, Kevin M.; Sloan, Paul A.

    2007-10-09

    Systems, components, and methods relating to subterranean containment barriers. Laterally adjacent tubular casings having male interlock structures and multiple female interlock structures defining recesses for receiving a male interlock structure are used to create subterranean barriers for containing and treating buried waste and its effluents. The multiple female interlock structures enable the barriers to be varied around subsurface objects and to form barrier sidewalls. The barrier may be used for treating and monitoring a zone of interest.

  17. Dense, layered membranes for hydrogen separation

    DOEpatents

    Roark, Shane E.; MacKay, Richard; Mundschau, Michael V.

    2006-02-21

    This invention provides hydrogen-permeable membranes for separation of hydrogen from hydrogen-containing gases. The membranes are multi-layer having a central hydrogen-permeable layer with one or more catalyst layers, barrier layers, and/or protective layers. The invention also relates to membrane reactors employing the hydrogen-permeable membranes of the invention and to methods for separation of hydrogen from a hydrogen-containing gas using the membranes and reactors. The reactors of this invention can be combined with additional reactor systems for direct use of the separated hydrogen.

  18. Graphene tunnel junctions with aluminum oxide barrier

    NASA Astrophysics Data System (ADS)

    Feng, Ying; Trainer, Daniel J.; Chen, Ke

    2016-10-01

    We report a development of graphene tunnel junctions made by chemical vapor deposition grown graphene and sputtered aluminum insulating by an in-situ grown aluminum oxide. The thin oxide layer formed in between the metal layer and the two-dimensional material is a crucial part of a tunnel junction. We characterized surface morphology of oxide layers and studied tunneling spectra of lead and silver tunnel junctions to estimate the quality of the aluminum oxide. The Brinkman-Rowell-Dynes model was applied to fit the conductance-voltage plots to calculate the thickness of oxide layers. Junctions with graphene both on bottom and on top were fabricated and their tunneling properties were characterized after exposure to air for weeks to test time stability. Furthermore, the resistances of graphene tunnel junctions with aluminum oxide formed naturally and in an oxygen atmosphere were studied. Our results demonstrate that in-situ aluminum oxide is an effective barrier for graphene tunnel junctions. The methods of barrier formation enable the realization of more tunnel devices and circuits based on graphene.

  19. Intestinal Barrier and Behavior.

    PubMed

    Julio-Pieper, M; Bravo, J A

    2016-01-01

    The intestinal barrier function contributes to gut homeostasis by modulating absorption of water, electrolytes, and nutrients from the lumen into the circulation while restricting the passage of noxious luminal substances and microorganisms. Chronic conditions such as rheumatoid arthritis, inflammatory bowel disease, and celiac disease are associated to intestinal barrier dysfunction. Here, the hypothesis is that a leaky intestinal wall allowing for indiscriminate passage of intraluminal compounds to the vascular compartment could in turn lead to systemic inflammation. An increasing number of studies are now investigating the association between gut permeability and CNS disorders, under the premise that translocation of intestinal luminal contents could affect CNS function, either directly or indirectly. Still, it is unknown whether disruption of intestinal barrier is a causative agent or a consequence in these situations. Here, we discuss the latest evidence pointing to an association between increased gut permeability and disrupted behavioral responses.

  20. Skin barrier in rosacea.

    PubMed

    Addor, Flavia Alvim Sant'Anna

    2016-01-01

    Recent studies about the cutaneous barrier demonstrated consistent evidence that the stratum corneum is a metabolically active structure and also has adaptive functions, may play a regulatory role in the inflammatory response with activation of keratinocytes, angiogenesis and fibroplasia, whose intensity depends primarily on the intensity the stimulus. There are few studies investigating the abnormalities of the skin barrier in rosacea, but the existing data already show that there are changes resulting from inflammation, which can generate a vicious circle caused a prolongation of flare-ups and worsening of symptoms. This article aims to gather the most relevant literature data about the characteristics and effects of the state of the skin barrier in rosacea.

  1. Skin barrier in rosacea*

    PubMed Central

    Addor, Flavia Alvim Sant'Anna

    2016-01-01

    Recent studies about the cutaneous barrier demonstrated consistent evidence that the stratum corneum is a metabolically active structure and also has adaptive functions, may play a regulatory role in the inflammatory response with activation of keratinocytes, angiogenesis and fibroplasia, whose intensity depends primarily on the intensity the stimulus. There are few studies investigating the abnormalities of the skin barrier in rosacea, but the existing data already show that there are changes resulting from inflammation, which can generate a vicious circle caused a prolongation of flare-ups and worsening of symptoms. This article aims to gather the most relevant literature data about the characteristics and effects of the state of the skin barrier in rosacea. PMID:26982780

  2. Thermal barrier coating system

    NASA Technical Reports Server (NTRS)

    Stecura, S. (Inventor)

    1984-01-01

    A high temperature oxidation resistant, thermal barrier coating system is disclosed for a nickel cobalt, or iron base alloy substrate. An inner metal bond coating contacts the substrate, and a thermal barrier coating covers the bond coating. NiCrAlR, FeCrAlR, and CoCrAlR alloys are satisfactory as bond coating compositions where R=Y or Yb. These alloys contain, by weight, 24.9-36.7% chromium, 5.4-18.5% aluminum, and 0.05 to 1.55% yttrium or 0.05 to 0.53% ytterbium. The coatings containing ytterbium are preferred over those containing yttrium. An outer thermal barrier coating of partial stabilized zirconium oxide (zirconia) which is between 6% and 8%, by weight, of yttrium oxide (yttria) covers the bond coating. Partial stabilization provides a material with superior durability. Partially stabilized zirconia consists of mixtures of cubic, tetragonal, and monoclinic phases.

  3. Metallographic techniques for evaluation of thermal barrier coatings

    NASA Technical Reports Server (NTRS)

    Brindley, William J.; Leonhardt, Todd A.

    1990-01-01

    The performance of ceramic thermal barrier coatings is strongly dependent on the amount and shape of the porosity in the coating. Current metallographic techniques do not provide polished surfaces that are adequate for a repeatable interpretation of the coating structures. A technique recently developed at NASA-Lewis for preparation of thermal barrier coating sections combines epoxy impregnation, careful sectioning and polishing, and interference layering to provide previously unobtainable information on processing-induced porosity. In fact, increased contrast and less ambiguous structure developed by the method make automatic quantitative metallography a viable option for characterizing thermal barrier coating structures.

  4. Ice barrier construction

    SciTech Connect

    Finucane, R. G.; Jahns, H. O.

    1985-06-18

    A method is provided for constructing spray ice barriers to protect offshore structures in a frigid body of water from mobile ice, waves and currents. Water is withdrawn from the body of water and is sprayed through ambient air which is below the freezing temperature of the water so that a substantial amount of the water freezes as it passes through the air. The sprayed water is directed to build up a mass of ice having a size and shape adapted to protect the offshore structure. Spray ice barriers can also be constructed for the containment of pollutant spills.

  5. Barriers to cancer screening.

    PubMed

    Womeodu, R J; Bailey, J E

    1996-01-01

    Many barriers to cancer screening have been summarized and discussed. Barriers have been documented in all patient populations, but some groups such as ethnic minorities and the elderly face unique barriers. The barriers to cancer screening, are multifactorial, but much of the responsibility for change must lie with health care providers and the health care delivery industry. This is not to free the patient of all responsibility, but some significant barriers are beyond their direct control. Take, for example, socioeconomic status, disease knowledge, and culturally related perceptions and myths about cancer detection and treatment. The health care industry must do a better job identifying and overcoming these barriers. The significant effects of provider counseling and advice must not be underestimated. Patients must first be advised, and then further actions must be taken if they reject the screening advice. Did they refuse adherence to recommendations because they do not view themselves as susceptible, because of overwhelming personal barriers, or because of a fatalistic attitude toward cancer detection and treatment? If that is the case, physicians and health care institutions must attempt to change perceptions, educate, and personalize the message so that patients accept their disease susceptibility [table: see text]. Multiple patient and provider risk factors have been identified that can be used to target patients particularly at high risk for inadequate cancer screening and providers at high risk for performing inadequate screening. Research has clearly demonstrated the effectiveness of interventions to improve tracking of patient and physician compliance with screening recommendations. Further research is needed to show the impact of managed-care penetration and payer status on screening efforts, and incentive schemes need to be tested that reward institutions and third-party payers who develop uniform standards and procedures for cancer screening. The

  6. Thermal Barrier Coating Workshop

    NASA Technical Reports Server (NTRS)

    Brindley, W. J. (Compiler); Lee, W. Y. (Compiler); Goedjen, J. G. (Compiler); Dapkunas, S. J. (Compiler)

    1995-01-01

    This document contains the agenda and presentation abstracts for the Thermal Barrier Coating Workshop, sponsored by NASA, DOE, and NIST. The workshop covered thermal barrier coating (TBC) issues related to applications, processing, properties, and modeling. The intent of the workshop was to highlight the state of knowledge on TBC's and to identify critical gaps in knowledge that may hinder TBC use in advanced applications. The workshop goals were achieved through presentations by 22 speakers representing industry, academia, and government as well as through extensive discussion periods.

  7. Thermal barrier coating system

    NASA Technical Reports Server (NTRS)

    Stecura, S.; Leibert, C. H. (Inventor)

    1977-01-01

    A coating system which contains a bond coating and a thermal barrier coating is applied to metal surfaces such as turbine blades and provides both low thermal conductivity and improved adherence when exposed to high temperature gases or liquids. The bond coating contains NiCrAlY and the thermal barrier coating contains a reflective oxide. The reflective oxides ZrO2-Y2O3 and ZrO2-MgO have demonstrated significant utility in high temperature turbine applications.

  8. Barrier methods of contraception.

    PubMed

    Skrine, R L

    1985-05-01

    Barrier methods of contraception make up an essential part of the present contraceptive range, and doctors need to know in detail how to choose and fit them as well as how to instruct patients in their use. This discussion reviews the mode of action of the barrier method and then focuses on the vaginal diaphragm, the cervical or vault cap, the collatex (Today) sponge, condoms, emotionl problems associated with the use of barrier methods, advantages of barrier methods, and future developments. Barrier methods of contraception are only effective if used consistently and carefully. Failure rates vary greatly between studies, but in selected populations the failure rate for the diaphragm with spermicide can be as low as 1.9/100 woman years (wy) and for the condom 3.6 per 100wy (Vessey et al., 1982). If known user failures are removed, the figure for the condom can drop to as low as 0.4 per 100wy (John, 1973), which compares favorably with that of the combined oral contraceptive. Other studies quote failure rates of 10 per 100wy or more. These methods call for considerable participation by the patient at or before each act of intercourse and there is, therefore, great scope for inefficient use, either as a result of poor instruction or because couples find that they interfere with happy, relaxed sexual activity -- or fear that they may do so. Doctors need to understand the feelings of their patients before recommending them. The aim of a barrier method is to prevent live sperm from meeting the ovum. This is accomplished by the combination of a physical barrier with a spermicide. In the case of the condom, the integrity of the physical barrier is the most important factor, although some patients feel more secure with an additional spermicide. The vaginal barriers used at present do not produce a "water-tight" fit, and the principle is that the spermicide is held over the cervix by the barrier. It is also possible that the device acts partially by holding the alkaline

  9. Environmental barrier coating

    DOEpatents

    Pujari, Vimal K.; Vartabedian, Ara; Collins, William T.; Woolley, David; Bateman, Charles

    2012-12-18

    The present invention relates generally to a multi-layered article suitable for service in severe environments. The article may be formed of a substrate, such as silicon carbide and/or silicon nitride. The substrate may have a first layer of a mixture of a rare earth silicate and Cordierite. The substrate may also have a second layer of a rare earth silicate or a mixture of a rare earth silicate and cordierite.

  10. Ceramic thermal barrier coatings for electric utility gas turbine engines

    NASA Technical Reports Server (NTRS)

    Miller, R. A.

    1986-01-01

    Research and development into thermal barrier coatings for electric utility gas turbine engines is reviewed critically. The type of coating systems developed for aircraft applications are found to be preferred for clear fuel electric utility applications. These coating systems consists of a layer of plasma sprayed zirconia-yttria ceramic over a layer of MCrAly bond coat. They are not recommended for use when molten salts are presented. Efforts to understand coating degradation in dirty environments and to develop corrosion resistant thermal barrier coatings are discussed.

  11. Thin Oxides as a Cu Diffusion Barrier for NIF Be Ablator Capsules

    SciTech Connect

    Youngblood, Kelly P.; Huang, H.; Xu, H. W.; Hayes, J.; Moreno, K. A.; Wu, J. J.; Nikroo, A.; Alford, C. A.; Hamza, A. V.; Kucheyev, S. O.; Wang, Y. M.; Wu, K. J.

    2013-03-01

    The NIF point design uses a five-layer capsule to modify the X-ray absorption in order to achieve optimized shock timing. A stepped copper dopant design defines the layer structure. The production of the capsule involves pyrolysis to remove the inner plastic mandrel. Copper atoms diffuse radially and azimuthally throughout the capsule during pyrolysis. This diffusion significantly diminishes the capsule performance during implosion. Thermal and coated oxide barrier layers employed between layers mitigate the diffusion of copper during the mandrel removal process. The copper atoms do not diffuse through this barrier during pyrolysis. A capsule fabrication method that produces a capsule with a thin oxide layer will be discussed.

  12. The Fission Barrier Landscape

    SciTech Connect

    Phair, L.; Moretto, L. G.

    2008-04-17

    Fission excitation functions have been measured for a chain of neighboring compound nuclei from {sup 207}Po to {sup 212}Po. We present a new analysis which provides a determination of the fission barriers and ground state shell effects with nearly spectroscopic accuracy. The accuracy achieved in this analysis may lead to a future detailed exploration of the saddle mass surface and its spectroscopy.

  13. Thermal barrier coating system

    NASA Technical Reports Server (NTRS)

    Stecura, S. (Inventor)

    1985-01-01

    An oxide thermal barrier coating comprises ZrO3-Yb2O3 that is plasma sprayed onto a previously applied bond coating. The zirconia is partially stabilized with about 124 w/o ytterbia to insure cubic, monoclinic, and terragonal phases.

  14. Barriers Regarding Using Technology

    ERIC Educational Resources Information Center

    Boekenoogen, John Russell

    2014-01-01

    The University of Florida (UF) used an open-source course management system (CMS) called Sakai. Sakai was the fourth CMS the university has used to help teach live, blended (or hybrid), and online courses over the past ten years. The objective of this dissertation was to identify what barriers may be preventing university personnel from using…

  15. Overcoming Language Barriers

    PubMed Central

    De Buda, Yvonne

    1976-01-01

    Many family physicians in Canada experience language and cultural barriers between themselves and their patients. Several aspects of the ensuing problems are described and some practical suggestions for solutions are made. The importance of health education for new Canadians in the family physician's office as well as through the media and community projects is stressed. Imagesp68-ap68-bp70-a PMID:21308059

  16. Great Barrier Reef

    NASA Technical Reports Server (NTRS)

    2002-01-01

    A better than average view of the Great Barrier Reef was captured by SeaWiFS on a recent overpass. There is sunglint northeast of the reef and there appears to be some sort of filamentous bloom in the Capricorn Channel.

  17. Application of diffusion barriers to high modulus fibers

    NASA Technical Reports Server (NTRS)

    Veltri, R. D.; Douglas, F. C.; Paradis, E. L.; Galasso, F. S.

    1977-01-01

    Barrier layers were coated onto high-modulus fibers, and nickel and titanium layers were overcoated as simulated matrix materials. The objective was to coat the high-strength fibers with unreactive selected materials without degrading the fibers. The fibers were tungsten, niobium, and single-crystal sapphire, while the materials used as barrier coating layers were Al2O3, Y2O3, TiC, ZrC, WC with 14% Co, and HfO2. An ion-plating technique was used to coat the fibers. The fibers were subjected to high-temperature heat treatments to evaluate the effectiveness of the barrier layer in preventing fiber-metal interactions. Results indicate that Al2O3, Y2O3, and HfO2 can be used as barrier layers to minimize the nickel-tungsten interaction. Further investigation, including thermal cycling tests at 1090 C, revealed that HfO2 is probably the best of the three.

  18. On the performance of capillary barriers as landfill cover

    NASA Astrophysics Data System (ADS)

    Kämpf, M.; Montenegro, H.

    Landfills and waste heaps require an engineered surface cover upon closure. The capping system can vary from a simple soil cover to multiple layers of earth and geosynthetic materials. Conventional design features a compacted soil layer, which suffers from drying out and cracking, as well as root and animal intrusion. Capillary barriers consisting of inclined fine-over-coarse soil layers are investigated as an alternative cover system. Under unsaturated conditions, the textural contrast delays vertical drainage by capillary forces. The moisture that builds up above the contact will flow downdip along the interface of the layers. Theoretical studies of capillary barriers have identified the hydraulic properties of the layers, the inclination angle, the length of the field and the infiltration rate as the fundamental characteristics of the system. However, it is unclear how these findings can lead to design criteria for capillary barriers. To assess the uncertainty involved in such approaches, experiments have been carried out in a 8 m long flume and on large scale test sites (40 m x 15 m). In addition, the ability of a numerical model to represent the relevant flow processes in capillary barriers has been examined.

  19. Metal diffusion barriers for GaAs solar cells.

    PubMed

    van Leest, R H; Mulder, P; Bauhuis, G J; Cheun, H; Lee, H; Yoon, W; van der Heijden, R; Bongers, E; Vlieg, E; Schermer, J J

    2017-03-15

    In this study accelerated ageing testing (AAT), J-V characterization and TEM imaging in combination with phase diagram data from literature are used to assess the potential of Ti, Ni, Pd and Pt as diffusion barriers for Au/Cu-based metallization of III-V solar cells. Ni barriers show the largest potential as at an AAT temperature of 250 °C both cells with 10 and 100 nm thick Ni barriers show significantly better performance compared to Au/Cu cells, with the cells with 10 nm Ni barriers even showing virtually no degradation after 7.5 days at 250 °C (equivalent to 10 years at 100 °C at an Ea of 0.70 eV). Detailed investigation shows that Ni does not act as a barrier in the classical sense, i.e. preventing diffusion of Cu and Au across the barrier. Instead Ni modifies or slows down the interactions taking place during device degradation and thus effectively acts as an 'interaction' barrier. Different interactions occur at temperatures below and above 250 °C and for thin (10 nm) and thick (100 nm) barriers. The results of this study indicate that 10-100 nm thick Ni intermediate layers in the Cu/Au based metallization of III-V solar cells may be beneficial to improve the device stability upon exposure to elevated temperatures.

  20. Surface pre-treatment for barrier coatings on polyethylene terephthalate

    NASA Astrophysics Data System (ADS)

    Bahre, H.; Bahroun, K.; Behm, H.; Steves, S.; Awakowicz, P.; Böke, M.; Hopmann, Ch; Winter, J.

    2013-02-01

    Polymers have favourable properties such as light weight, flexibility and transparency. Consequently, this makes them suitable for food packaging, organic light-emitting diodes and flexible solar cells. Nonetheless, raw plastics do not possess sufficient barrier functionality against oxygen and water vapour, which is of paramount importance for most applications. A widespread solution is to deposit thin silicon oxide layers using plasma processes. However, silicon oxide layers do not always fulfil the requirements concerning adhesion and barrier performance when deposited on films. Thus, plasma pre-treatment is often necessary. To analyse the influence of a plasma-based pre-treatment on barrier performance, different plasma pre-treatments on three reactor setups were applied to a very smooth polyethylene terephthalate film before depositing a silicon oxide barrier layer. In this paper, the influence of oxygen and argon plasma pre-treatments towards the barrier performance is discussed examining the chemical and topological change of the film. It was observed that a short one-to-ten-second plasma treatment can reduce the oxygen transmission rate by a factor of five. The surface chemistry and the surface topography change significantly for these short treatment times, leading to an increased surface energy. The surface roughness rises slowly due to the development of small spots in the nanometre range. For very long treatment times, surface roughness of the order of the barrier layer's thickness results in a complete loss of barrier properties. During plasma pre-treatment, the trade-off between surface activation and roughening of the surface has to be carefully considered.

  1. Stability of barrier buckets with short barrier separations

    SciTech Connect

    Ng, K.Y.; /Fermilab

    2005-04-01

    A barrier bucket with very short or zero rf-barrier separation (relative to the barrier widths) has its synchrotron tune decreasing from a very large value towards the bucket boundary. As a result, chaotic region may form near the bucket center and extends outward under increasing modulation of rf voltage and/or rf phase. Application is made to those barrier buckets used in momentum mining at the Fermilab Recycler Ring.

  2. Ceramic with preferential oxygen reactive layer

    NASA Technical Reports Server (NTRS)

    Wang, Hongyu (Inventor); Luthra, Krishan Lal (Inventor)

    2001-01-01

    An article comprises a silicon-containing substrate and an external environmental/thermal barrier coating. The external environmental/thermal barrier coating is permeable to diffusion of an environmental oxidant and the silicon-containing substrate is oxidizable by reaction with oxidant to form at least one gaseous product. The article comprises an intermediate layer/coating between the silicon-containing substrate and the environmental/thermal barrier coating that is oxidizable to a nongaseous product by reaction with the oxidant in preference to reaction of the silicon-containing substrate with the oxidant. A method of forming an article, comprises forming a silicon-based substrate that is oxidizable by reaction with oxidant to at least one gaseous product and applying an intermediate layer/coating onto the substrate, wherein the intermediate layer/coating is oxidizable to a nongaseous product by reaction with the oxidant in preference to reaction of the silicon-containing substrate with the oxidant.

  3. Apparatus and method of manufacture for depositing a composite anti-reflection layer on a silicon surface

    NASA Technical Reports Server (NTRS)

    Pain, Bedabrata (Inventor)

    2012-01-01

    An apparatus and associated method are provided. A first silicon layer having at least one of an associated passivation layer and barrier is included. Also included is a composite anti-reflection layer including a stack of layers each with a different thickness and refractive index. Such composite anti-reflection layer is disposed adjacent to the first silicon layer.

  4. Chaotic correlations in barrier billiards with arbitrary barriers

    NASA Astrophysics Data System (ADS)

    Osbaldestin, A. H.; Adamson, L. N. C.

    2013-06-01

    We study autocorrelation functions in symmetric barrier billiards for golden mean trajectories with arbitrary barriers. Renormalization analysis reveals the presence of a chaotic invariant set and thus that, for a typical barrier, there are chaotic correlations. The chaotic renormalization set is the analogue of the so-called orchid that arises in a generalized Harper equation.

  5. Nonmixing layers

    NASA Astrophysics Data System (ADS)

    Gaillard, Pierre; Giovangigli, Vincent; Matuszewski, Lionel

    2016-12-01

    We investigate the impact of nonideal diffusion on the structure of supercritical cryogenic binary mixing layers. This situation is typical of liquid fuel injection in high-pressure rocket engines. Nonideal diffusion has a dramatic impact in the neighborhood of chemical thermodynamic stability limits where the components become quasi-immiscible and ultimately form a nonmixing layer. Numerical simulations are performed for mixing layers of H2 and N2 at a pressure of 100 atm and temperature around 120-150 K near chemical thermodynamic stability limits.

  6. Amorphous Ternary Diffusion Barriers for Silicon Metallizations

    NASA Astrophysics Data System (ADS)

    Reid, Jason Sven

    1995-01-01

    Reactively sputtered from transition-metal silicide or boride targets in Ar/N_2 discharges, thin amorphous films of TM-Si-N (TM = Mo, Ta, Ti, or W) and W-B-N are investigated. Resistivity, density, stress, and structure are given as functions of composition, and in some cases, temperature. Transmission electron microscopy shows that most of the films are marginally amorphous with the scale of local order ranging from 0.5 to 1.5 nm. Small -angle scattering measurements reveal chemically dissimilary regions in the films. When fully nitrided, Si appears to be preferentially bonded to nitrogen in the form of Si_3N_4 in the TM-Si-N films, according to extended energy loss fine structure (EXELFS) measurements. By tests on shallow-junction diodes, 100-nm thick TM-Si-N barriers are able to prevent aluminum overlayers from spiking the Si substrate at temperatures above aluminum's melting point, 660^circC. The exceptional stability is partly attributable to a 3 nm, self-sealing AlN layer which grows at the TM-Si-N/Al interface. The performance of the TM-Si-N and W-B-N barriers with copper overlayers is equally impressive. At the proper compositions, 100-nm barriers prevent copper from diffusing into the junction at 800^circC or higher for a 30-min vacuum annealing. Diode failure typically corresponds to the crystallization temperature of the barrier, which can be reduced by the presence of copper. Preliminary diffusion measurements of Cu in Ta _{36}Si_ {14}N_{50} films by SIMS yield an approximate diffusivity constant of D_{CU} = (0.014 cm ^2/s) times exp(-2.7 eV/kT). A 10-nm-thick TM-Si-N barrier with a Cu overlayer on MOS capacitors reveals no penetration of Cu into SiO_2 during an 80 h bias-thermal-stress at 300^circ C and 1 MV/cm applied field. Through a microscopic four-point probe lithographically defined on a Cu/barrier/Cu trilayer stack, the specific contact resistances of barrier/Cu interfaces are determined for TM-Si-N, TiN, and W barriers. In all instances, the

  7. Schottky barrier diode and method thereof

    NASA Technical Reports Server (NTRS)

    Aslam, Shahid (Inventor); Franz, David (Inventor)

    2008-01-01

    Pt/n.sup.-GaN Schottky barrier diodes are disclosed that are particularly suited to serve as ultra-violet sensors operating at wavelengths below 200 nm. The Pt/n.sup.-GaN Schottky barrier diodes have very large active areas, up to 1 cm.sup.2, which exhibit extremely low leakage current at low reverse biases. Very large area Pt/n.sup.-GaN Schottky diodes of sizes 0.25 cm.sup.2 and 1 cm.sup.2 have been fabricated from n.sup.-/n.sup.+ GaN epitaxial layers grown by vapor phase epitaxy on single crystal c-plane sapphire, which showed leakage currents of 14 pA and 2.7 nA, respectively for the 0.25 cm.sup.2 and 1 cm.sup.2 diodes both configured at a 0.5V reverse bias.

  8. Diffusion barriers in modified air brazes

    DOEpatents

    Weil, Kenneth Scott; Hardy, John S.; Kim, Jin Yong; Choi, Jung-Pyung

    2010-04-06

    A method for joining two ceramic parts, or a ceramic part and a metal part, and the joint formed thereby. The method provides two or more parts, a braze consisting of a mixture of copper oxide and silver, a diffusion barrier, and then heats the braze for a time and at a temperature sufficient to form the braze into a bond holding the two or more parts together. The diffusion barrier is an oxidizable metal that forms either a homogeneous component of the braze, a heterogeneous component of the braze, a separate layer bordering the braze, or combinations thereof. The oxidizable metal is selected from the group Al, Mg, Cr, Si, Ni, Co, Mn, Ti, Zr, Hf, Pt, Pd, Au, lanthanides, and combinations thereof.

  9. Diffusion barriers in modified air brazes

    DOEpatents

    Weil, Kenneth Scott; Hardy, John S; Kim, Jin Yong; Choi, Jung-Pyung

    2013-04-23

    A method for joining two ceramic parts, or a ceramic part and a metal part, and the joint formed thereby. The method provides two or more parts, a braze consisting of a mixture of copper oxide and silver, a diffusion barrier, and then heats the braze for a time and at a temperature sufficient to form the braze into a bond holding the two or more parts together. The diffusion barrier is an oxidizable metal that forms either a homogeneous component of the braze, a heterogeneous component of the braze, a separate layer bordering the braze, or combinations thereof. The oxidizable metal is selected from the group Al, Mg, Cr, Si, Ni, Co, Mn, Ti, Zr, Hf, Pt, Pd, Au, lanthanides, and combinations thereof.

  10. Apoplastic Diffusion Barriers in Arabidopsis

    PubMed Central

    Schreiber, Lukas; Franke, Rochus Benni; Geldner, Niko; Reina-Pinto, José J.; Kunst, Ljerka

    2013-01-01

    During the development of Arabidopsis and other land plants, diffusion barriers are formed in the apoplast of specialized tissues within a variety of plant organs. While the cuticle of the epidermis is the primary diffusion barrier in the shoot, the Casparian strips and suberin lamellae of the endodermis and the periderm represent the diffusion barriers in the root. Different classes of molecules contribute to the formation of extracellular diffusion barriers in an organ- and tissue-specific manner. Cutin and wax are the major components of the cuticle, lignin forms the early Casparian strip, and suberin is deposited in the stage II endodermis and the periderm. The current status of our understanding of the relationships between the chemical structure, ultrastructure and physiological functions of plant diffusion barriers is discussed. Specific aspects of the synthesis of diffusion barrier components and protocols that can be used for the assessment of barrier function and important barrier properties are also presented. PMID:24465172

  11. Modeling Catastrophic Barrier Island Dynamics

    NASA Astrophysics Data System (ADS)

    Whitley, J. W.; McNamara, D.

    2012-12-01

    Barrier islands, thin strips of sand lying parallel to the mainland coastline, along the U.S. Atlantic and Gulf Coasts appear to have maintained their form for thousands of years in the face of rising sea level. The mechanisms that allow barrier islands to remain robust are transport of sediment from the ocean side of barriers to the top and backside during storms, termed island overwash, and the growth and alongshore propagation of tidal deltas near barrier island inlets. Dynamically these processes provide the necessary feedbacks to maintain a barrier island in an attractor that withstands rising sea level within a phase space of barrier island geometrical characteristics. Current barrier island configurations along the Atlantic and Gulf coasts exist among a wide range of storm climate and underlying geologic conditions and therefore the environment that forces overwash and tidal delta dynamics varies considerably. It has been suggested that barrier islands in certain locations such as those between Avon and Buxton (losing 76% of island width since 1852) and Chandeleur islands (losing 85% of its surface area since 2005) along the Atlantic and Gulf coasts, respectively, may be subject to a catastrophic shift in barrier island attractor states - more numerous inlets cutting barriers in some locations and the complete disappearance of barrier islands in other locations. In contrast to common models for barrier islands that neglect storm dynamics and often only consider cross-shore response, we use an alongshore extended model for barrier island dynamics including beach erosion, island overwash and inlet cutting during storms, and beach accretion, tidal delta growth and dune and vegetation growth between storms to explore the response of barrier islands to a wide range of environmental forcing. Results will be presented that show how barrier island attractor states are altered with variations in the rate of sea level rise, storminess, and underlying geology. We will

  12. Bricks and mortar of the epidermal barrier.

    PubMed

    Nemes, Z; Steinert, P M

    1999-03-31

    A specialized tissue type, the keratinizing epithelium, protects terrestrial mammals from water loss and noxious physical, chemical and mechanical insults. This barrier between the body and the environment is constantly maintained by reproduction of inner living epidermal keratinocytes which undergo a process of terminal differentiation and then migrate to the surface as interlocking layers of dead stratum corneum cells. These cells provide the bulwark of mechanical and chemical protection, and together with their intercellular lipid surroundings, confer water-impermeability. Much of this barrier function is provided by the cornified cell envelope (CE), an extremely tough protein/lipid polymer structure formed just below the cytoplasmic membrane and subsequently resides on the exterior of the dead cornified cells. It consists of two parts: a protein envelope and a lipid envelope. The protein envelope is thought to contribute to the biomechanical properties of the CE as a result of cross-linking of specialized CE structural proteins by both disulfide bonds and N(epsilon)-(gamma-glutamyl)lysine isopeptide bonds formed by transglutaminases. Some of the structural proteins involved include involucrin, loricrin, small proline rich proteins, keratin intermediate filaments, elafin, cystatin A, and desmosomal proteins. The lipid envelope is located on the exterior of and covalently attached by ester bonds to the protein envelope and consists of a monomolecular layer of omega-hydroxyceramides. These not only serve of provide a Teflon-like coating to the cell, but also interdigitate with the intercellular lipid lamellae perhaps in a Velcro-like fashion. In fact the CE is a common feature of all stratified squamous epithelia, although its precise composition, structure and barrier function requirements vary widely between epithelia. Recent work has shown that a number of diseases which display defective epidermal barrier function, generically known as ichthyoses, are the

  13. Spallanzani Layers

    NASA Technical Reports Server (NTRS)

    2006-01-01

    31 March 2006 This Mars Global Surveyor (MGS) Mars Orbiter Camera (MOC) image shows a layered, light-toned mesa among other layered materials exposed in a mound that covers much of the floor of Spallanzani Crater.

    Location near: 58.3oS, 273.9oW Image width: 3 km (1.9 mi) Illumination from: upper left Season: Southern Summer

  14. Can-Filled Crash Barrier

    NASA Technical Reports Server (NTRS)

    Wilson, A. H.

    1983-01-01

    Crash barrier composed largely of used aluminum beverage cans protects occupants of cars in collisions with poles or trees. Lightweight, can-filled barrier very effective in softening impact of an automobile in head-on and off-angle collisions. Preliminary results indicate barrier is effective in collisions up to 40 mi/h (64 km/h).

  15. Information Barriers: Identification and Seriousness.

    ERIC Educational Resources Information Center

    Haag, D. E.

    The project documented in this report identified barriers researchers encounter in gaining access to--i.e., identifying, acquiring, handling, and using--published information and measured the seriousness of the more significant barriers. Fifty-one barriers were identified, and a method of measuring their seriousness was developed. Thirty of the…

  16. Skin Barrier Function

    PubMed Central

    Elias, Peter M.

    2010-01-01

    Like other inflammatory dermatoses, the pathogenesis of atopic dermatitis (AD) has been largely attributed to abnormalities in adaptive immunity. T helper (Th) cell types 1 and 2 cell dysregulation, IgE production, mast cell hyperactivity, and dendritic cell signaling are thought to account for the chronic, pruritic, and inflammatory dermatosis that characterizes AD. Not surprisingly, therapy has been directed toward ameliorating Th2-mediated inflammation and pruritus. Here, we review emerging evidence that inflammation in AD occurs downstream to inherited and acquired insults to the barrier. Therapy based upon this new view of pathogenesis should emphasize approaches that correct the primary abnormality in barrier function, which drives downstream inflammation and allows unrestricted antigen access. PMID:18606081

  17. Barrier breaching device

    DOEpatents

    Honodel, C.A.

    1983-06-01

    A barrier breaching device that is designed primarily for opening holes in interior walls of buildings uses detonating fuse for explosive force. The fuse acts as the ribs or spokes of an umbrella-like device that may be opened up to form a cone. The cone is placed against the wall so that detonating fuse that rings the base of the device and which is ignited by the spoke-like fuses serves to cut a circular hole in the wall.

  18. Knowledge Oriented Materials Engineering of Layered Thermal Barrier System (Nomelt)

    DTIC Science & Technology

    2005-01-01

    DBTT ) of approximately 600°C. Also contrary to what was observed in the diffusion aluminide samples, thermally cycling the NiCoCrA1Y bond coat resulted...micro tensile testing setup mounted to an air table is equipped with a steel hook to pull from the inside at the center of the beam. A S-axis p...the custom-built micro tensile setup described in the previous section. Steel micro hooks are connected to a piezoelectric stepper motor fixed to a

  19. Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier

    DOEpatents

    Forrest, Stephen R.; Wei, Guodan

    2010-07-06

    A plurality of layers of a first semiconductor material and a plurality of dots-in-a-fence barriers disposed in a stack between a first electrode and a second electrode. Each dots-in-a-fence barrier consists essentially of a plurality of quantum dots of a second semiconductor material embedded between and in direct contact with two layers of a third semiconductor material. Wave functions of the quantum dots overlap as at least one intermediate band. The layers of the third semiconductor material are arranged as tunneling barriers to require a first electron and/or a first hole in a layer of the first material to perform quantum mechanical tunneling to reach the second material within a respective quantum dot, and to require a second electron and/or a second hole in a layer of the first semiconductor material to perform quantum mechanical tunneling to reach another layer of the first semiconductor material.

  20. Failure mechanism of Ta diffusion barrier between Cu and Si

    NASA Astrophysics Data System (ADS)

    Laurila, Tomi; Zeng, Kejun; Kivilahti, Jorma K.; Molarius, Jyrki; Suni, Ilkka

    2000-09-01

    The reaction mechanisms in the Si/Ta/Cu metallization system and their relation to the microstructure of thin films are discussed on the basis of experimental results and the assessment of the ternary Si-Ta-Cu phase diagram at 700 °C. With the help of sheet resistance measurements, Rutherford backscattering spectroscopy, x-ray diffraction, a scanning electron microscope, and a transmission electron microscope, the Ta barrier layer was observed to fail at temperatures above 650 °C due to the formation of TaSi2, the diffusion of Cu through the silicide layer, and the resulting formation of Cu3Si precipitates. However, in order for the TaSi2 phase to form first, the Ta diffusion barrier layer must be thick enough (e.g., 50-100 nm) to prevent Cu diffusion into the Si substrate up to the temperature of TaSi2 formation (˜650 °C). Independent of the Ta layer thickness, Cu3Si was present as large nodules, whereas the TaSi2 existed as a uniform layer. The resulting reaction structure was found to be in local equilibrium on the basis of the assessed Si-Ta-Cu phase diagram at 700 °C, and therefore no further reactions were expected. The role of oxygen was also found to be important in the reactions and it seems to have a strong effect on the thermal stability of the barrier layer.

  1. Aqueous oxidation reaction enabled layer-by-layer corrosion of semiconductor nanoplates into single-crystalline 2D nanocrystals with single layer accuracy and ionic surface capping.

    PubMed

    Ji, Muwei; Xu, Meng; Zhang, Jun; Liu, Jiajia; Zhang, Jiatao

    2016-02-25

    A controllable aqueous oxidation reaction enabled layer-by-layer corrosion has been proposed to prepare high-quality two-dimensional (2D) semiconductor nanocrystals with single layer accuracy and well-retained hexagonal shapes. The appropriate oxidizing agent, such as H2O2, Fe(NO3)3, and HNO3, could not only corrode the layered-crystalline-structured Bi2Te3 nanoplates layer-by-layer to be a single quintuple layer, but also replace the organic barriers to be ionic ligands on the surface synergistically. AFM analysis was used to confirm the layer-by-layer exfoliation from the side to the center. Together with precise XRD, LRTEM and HRTEM characterizations, the controllable oxidation reaction enabled aqueous layer-by-layer corrosion mechanism has been studied.

  2. Dielectric barrier discharge processing of aerospace materials

    NASA Astrophysics Data System (ADS)

    Scott, S. J.; Figgures, C. C.; Dixon, D. G.

    2004-08-01

    We report the use of atmospheric pressure, air based, dielectric barrier discharges (DBD) to treat materials commonly used in the aerospace industries. The material samples were processed using a test-bed of a conventional DBD configuration in which the sample formed one of the electrodes and was placed in close proximity to a ceramic electrode. The discharges generated a powerful, cold oxidizing environment which was able to remove organic contaminants, etch primer and paint layers, oxidize aluminium and roughen carbon fibre composites by the selective removal of resin.

  3. Molecular assemblies as protective barriers and adhesion promotion interlayer

    DOEpatents

    King, D.E.; Czanderna, A.W.; Kennedy, C.E.

    1996-01-30

    A protective diffusion barrier having adhesive qualities for metalized surfaces is provided by a passivating agent having the formula HS--(CH{sub 2}){sub 11}--COOH which forms a very dense, transparent organized molecular assembly or layer that is impervious to water, alkali, and other impurities and corrosive substances that typically attack metal surfaces. 8 figs.

  4. Molecular assemblies as protective barriers and adhesion promotion interlayer

    DOEpatents

    King, David E.; Czanderna, Alvin W.; Kennedy, Cheryl E.

    1996-01-01

    A protective diffusion barrier having adhesive qualifies for metalized surfaces is provided by a passivating agent having the formula HS--(CH.sub.2).sub.11 --COOH Which forms a very dense, transparent organized molecular assembly or layer that is impervious to water, alkali, and other impurities and corrosive substances that typically attack metal surfaces.

  5. Surface Leakage Mechanisms in III-V Infrared Barrier Detectors

    NASA Astrophysics Data System (ADS)

    Sidor, D. E.; Savich, G. R.; Wicks, G. W.

    2016-09-01

    Infrared detector epitaxial structures employing unipolar barriers exhibit greatly reduced dark currents compared to simple pn-based structures. When correctly positioned within the structure, unipolar barriers are highly effective at blocking bulk dark current mechanisms. Unipolar barriers are also effective at suppressing surface leakage current in infrared detector structures employing absorbing layers that possess the same conductivity type in their bulk and at their surface. When an absorbing layer possesses opposite conductivity types in its bulk and at its surface, unipolar barriers are not solutions to surface leakage. This work reviews empirically determined surface band alignments of III-V semiconductor compounds and modeled surface band alignments of both gallium-free and gallium-containing type-II strained layer superlattice material systems. Surface band alignments are used to predict surface conductivity types in several detector structures, and the relationship between surface and bulk conductivity types in the absorbing layers of these structures is used as the basis for explaining observed surface leakage characteristics.

  6. Barrier and Mechanical Properties of Starch-Clay Nanocomposite Films

    Technology Transfer Automated Retrieval System (TEKTRAN)

    The poor barrier and mechanical properties of biopolymer-based food packaging can potentially be enhanced by the use of layered silicates (nanoclay) to produce nanocomposites. In this study, starch-clay nano-composites were synthesized by a melt extrusion method. Natural (MMT) and organically modifi...

  7. HEURISTIC OPTIMIZATION AND ALGORITHM TUNING APPLIED TO SORPTIVE BARRIER DESIGN

    EPA Science Inventory

    While heuristic optimization is applied in environmental applications, ad-hoc algorithm configuration is typical. We use a multi-layer sorptive barrier design problem as a benchmark for an algorithm-tuning procedure, as applied to three heuristics (genetic algorithms, simulated ...

  8. A microfluidic in vitro system for the quantitative study of the stomach mucus barrier function.

    PubMed

    Li, Leon; Lieleg, Oliver; Jang, Sae; Ribbeck, Katharina; Han, Jongyoon

    2012-10-21

    In the stomach, a layer of gastric mucus protects the epithelial cells of the stomach wall against damage by the acidic digestive juices in the gastric lumen. Despite considerable research, the biophysical mechanisms for this acid barrier are not understood. We present an in vitro microfluidic tool to characterize the stomach acid barrier, in which purified mucin polymers are "secreted" against an acidic zone on chip, mimicking the in vivo secretion of gastric mucus into an acidic stomach lumen. This device reconstitutes both the H(+) concentration gradient and outward flow environment of the mucus layer in vivo. Our experiments demonstrate that a continuously secreted mucin layer hinders acid diffusion, suggesting novel insights into the barrier role of mucins. More broadly, our system may serve as a platform tool for studying the barrier functions provided by mucus layers in the body and for studying mucus drug interactions.

  9. Trends in drug delivery through tissue barriers containing tight junctions

    PubMed Central

    Tscheik, Christian; Blasig, Ingolf E.; Winkler, Lars

    2013-01-01

    A limitation in the uptake of many drugs is the restricted permeation through tissue barriers. There are two general ways to cross barriers formed by cell layers: by transcytosis or by diffusion through the intercellular space. In the latter, tight junctions (TJs) play the decisive role in the regulation of the barrier permeability. Thus, transient modulation of TJs is a potent strategy to improve drug delivery. There have been extensive studies on surfactant-like absorption enhancers. One of the most effective enhancers found is sodium caprate. However, this modulates TJs in an unspecific fashion. A novel approach would be the specific modulation of TJ-associated marvel proteins and claudins, which are the main structural components of the TJs. Recent studies have identified synthetic peptidomimetics and RNA interference techniques to downregulate the expression of targeted TJ proteins. This review summarizes current progress and discusses the impact on TJs' barrier function. PMID:24665392

  10. Spin-dependent tunnel junctions with ZrOx barriers

    NASA Astrophysics Data System (ADS)

    Wang, Jianguo; Freitas, P. P.; Snoeck, E.; Wei, P.; Soares, J. C.

    2001-12-01

    Spin-dependent tunnel junctions with crystalline ZrOx barriers were fabricated, with tunnel magnetoresistance (TMR) reaching 20% and a resistance×area product of 24 k Ω μm2, after annealing at 260 °C. Effective barrier height and thickness are 1.6 eV and 10.6 Å, respectively. The ZrOx barriers were fabricated by rf plasma oxidation of a 5 Å thick Zr layer. High-resolution transmission electron microscopy and Rutherford backscattering spectrometry were used to characterize the as-deposited barrier. Both ZrO and ZrO2 phases are present, together with (CoFe)Ox. Upon annealing, the interfacial oxygen moves into the barrier, resulting in an increase of TMR from 2% to 19.2%, an increase of barrier height from 0.3 to 1.6 eV, and a reduction of barrier thickness from 18.5 to 10.5 Å.

  11. Electronically transparent graphene barriers against unwanted doping of silicon.

    PubMed

    Wong, Calvin Pei Yu; Koek, Terence Jun Hui; Liu, Yanpeng; Loh, Kian Ping; Goh, Kuan Eng Johnson; Troadec, Cedric; Nijhuis, Christian A

    2014-11-26

    Diffusion barriers prevent materials from intermixing (e.g., undesired doping) in electronic devices. Most diffusion barrier materials are often very specific for a certain combination of materials and/or change the energetics of the interface because they are insulating or add to the contact resistances. This paper presents graphene (Gr) as an electronically transparent, without adding significant resistance to the interface, diffusion barrier in metal/semiconductor devices, where Gr prevents Au and Cu from diffusion into the Si, and unintentionally dope the Si. We studied the electronic properties of the n-Si(111)/Gr/M Schottky barriers (with and without Gr and M=Au or Cu) by I(V) measurements and at the nanoscale by ballistic electron emission spectroscopy (BEEM). The layer of Gr does not change the Schottky barrier of these junctions. The Gr barrier was stable at 300 °C for 1 h and prevented the diffusion of Cu into n-Si(111) and the formation of Cu3Si. Thus, we conclude that the Gr is mechanically and chemically stable enough to withstand the harsh fabrication methods typically encountered in clean room processes (e.g., deposition of metals in high vacuum conditions at high temperatures), it is electronically transparent (it does not change the energetics of the Si/Au or Si/Cu Schottky barriers), and effectively prevented diffusion of the Cu or Au into the Si at elevated temperatures and vice versa.

  12. The photoluminescence properties of QWs with asymmetrical step-like InGaN/GaN quantum barriers

    NASA Astrophysics Data System (ADS)

    Rajabi, Kamran; Yang, Wei; Li, Ding; He, Juan; Zong, Hua; Ji, Qingbin; Shen, Bingran; Yan, Tongxin; Hu, Xiaodong

    2015-04-01

    The asymmetrical structures were created by inserting a low-indium-content layer between the QW and barrier to form a step-like quantum barrier (QB) at one side of QW. The optical effects of the inserting layer on QW emission were investigated with low-temperature photoluminescence (PL) and time-resolved PL (TRPL). The inserted layer partially relaxed the strain within QW layer and induced about 25 nm red-shift in the PL emission compared with conventional QW, while the presence of localization centers around QW affected the emission mechanism and increased the radiative decay time. Furthermore, the position of the inserted layer played different roles in the changed structures, and whilst the n-side step-barrier exhibited strong localization in the energy levels of the inserted layer, the p-side step-barrier showed stronger localization center for the QW levels.

  13. Beyond parallax barriers: applying formal optimization methods to multilayer automultiscopic displays

    NASA Astrophysics Data System (ADS)

    Lanman, Douglas; Wetzstein, Gordon; Hirsch, Matthew; Heidrich, Wolfgang; Raskar, Ramesh

    2012-03-01

    This paper focuses on resolving long-standing limitations of parallax barriers by applying formal optimization methods. We consider two generalizations of conventional parallax barriers. First, we consider general two-layer architectures, supporting high-speed temporal variation with arbitrary opacities on each layer. Second, we consider general multi-layer architectures containing three or more light-attenuating layers. This line of research has led to two new attenuation-based displays. The High-Rank 3D (HR3D) display contains a stacked pair of LCD panels; rather than using heuristically-defined parallax barriers, both layers are jointly-optimized using low-rank light field factorization, resulting in increased brightness, refresh rate, and battery life for mobile applications. The Layered 3D display extends this approach to multi-layered displays composed of compact volumes of light-attenuating material. Such volumetric attenuators recreate a 4D light field when illuminated by a uniform backlight. We further introduce Polarization Fields as an optically-efficient and computationally efficient extension of Layered 3D to multi-layer LCDs. Together, these projects reveal new generalizations to parallax barrier concepts, enabled by the application of formal optimization methods to multi-layer attenuation-based designs in a manner that uniquely leverages the compressive nature of 3D scenes for display applications.

  14. Improving thermal barrier coatings by laser remelting.

    PubMed

    Múnez, C J; Gómez-García, J; Sevillano, F; Poza, P; Utrilla, M V

    2011-10-01

    Thermal barrier coatings are extensively used to protect metallic components in applications where the operating conditions include aggressive environment at high temperatures. These coatings are usually processed by thermal spraying techniques and the resulting microstructure includes thin and large splats, associated with the deposition of individual droplets, with porosity between splats. This porosity reduces the oxidation and corrosion resistance favouring the entrance of aggressive species during service. To overcome this limitation, the top coat could be modified by laser glazing reducing surface roughness and sealing open porosity. ZrO2(Y2O3) top coat and NiCrAlY bond coating were air plasma sprayed onto an Inconel 600 Ni base alloy. The top coat was laser remelted and a densified ceramic layer was induced in the top surface of the ceramic coating. This layer inhibited the ingress of aggressive species and delayed bond coat oxidation.

  15. Thermal barrier coatings for turbine components

    DOEpatents

    Subramanian, Ramesh; Sabol, Stephen M.; Goedjen, John G.; Sloan, Kelly M.; Vance, Steven J.

    2002-01-01

    A turbine component, such as a turbine blade having a metal substrate (22) is coated with a metal MCrAlY alloy layer (24) and then a thermal barrier layer (20) selected from LaAlO.sub.3, NdAlO.sub.3, La.sub.2 Hf.sub.2 O.sub.7, Dy.sub.3 Al.sub.5 O.sub.12, HO.sub.3 Al.sub.3 O.sub.12, ErAlO.sub.3, GdAlO.sub.3, Yb.sub.2 Ti.sub.2 O.sub.7, LaYbO.sub.3, Gd.sub.2 Hf.sub.2 O.sub.7 or Y.sub.3 Al.sub.5 O.sub.12.

  16. Thermal barrier coating resistant to sintering

    DOEpatents

    Subramanian, Ramesh; Seth, Brig B.

    2005-08-23

    A device (10) is made, having a ceramic thermal barrier coating layer (16) characterized by a microstructure having gaps (18) with a sintering inhibiting material (22) disposed on the columns (20) within the gaps (18). The sintering resistant material (22) is stable over the range of operating temperatures of the device (10), is not soluble with the underlying ceramic layer (16) and is applied by a process that is not an electron beam physical vapor deposition process. The sintering inhibiting material (22) has a morphology adapted to improve the functionality of the sintering inhibiting material (22), characterized as continuous, nodule, rivulet, grain, crack, flake and combinations thereof and being disposed within at least some of the vertical and horizontal gaps.

  17. The Electronic Properties of AlN Tunnel Barriers and the Effect of Oxygen Impurities

    NASA Astrophysics Data System (ADS)

    Li, Yun; Read, John; Huang, Pinshane; Tseng, Hsin-Wei; Buhrman, Robert

    2009-03-01

    The use of ultra-thin aluminum nitride (AlN) barrier layers can result in Josephson Junctions (JJ's) with both very high critical current densities and low sub-gap leakage [1-4], demonstrating that AlN is a superior JJ tunnel barrier material in the ultra-thin barrier limit. We have utilized scanning tunneling spectroscopy (STS) and analytical scanning transmission electron microscopy (STEM) with electron energy-loss spectroscopy (EELS) to investigate thin AlN layers formed on Nb/Al bilayers by treating the Al surface with an atomic nitrogen beam. Under optimum nitridation conditions the resultant ˜1nm AlN barrier layers have small, ˜ 1 eV, but well defined band gaps and stable surfaces in UHV, with the absence of band-tail states extending close to the Fermi energy, which is in sharp contrast to the case for AlOx layers formed by thermal oxidation [5]. The AlN barrier layers are however quite sensitive to even low levels of background oxygen (O) exposure, either during or after the nitridation process, which reacts O into the barrier layer and results in the formation of low energy band-tail states and an unstable surface. [1] Zijlstra et al., APL 91, 233102 (2007); [2] Wang et al., APL 64, 2034 (1994); [3] Kleinsasser et al., IEEE TAS 5, 2318 (1995); [4] Kaul et al., JMRS 20, 3047 (2005); [5] Mather et al., APL 86, 242504 (2005)

  18. Surface layer effects on waste glass corrosion

    SciTech Connect

    Feng, X.

    1993-12-31

    Water contact subjects waste glass to chemical attack that results in the formation of surface alteration layers. Two principal hypotheses have been advanced concerning the effect of surface alteration layers on continued glass corrosion: (1) they act as a mass transport barrier and (2) they influence the chemical affinity of the glass reaction. In general, transport barrier effects have been found to be less important than affinity effects in the corrosion of most high-level nuclear waste glasses. However, they can be important under some circumstances, for example, in a very alkaline solution, in leachants containing Mg ions, or under conditions where the matrix dissolution rate is very low. The latter suggests that physical barrier effect may affect the long-term glass dissolution rate. Surface layers influence glass reaction affinity through the effects of the altered glass and secondary phases on the solution chemistry. The reaction affinity may be controlled by various precipitates and crystalline phases, amorphous silica phases, gel layer, or all the components of the glass. The surface alteration layers influence radionuclide release mainly through colloid formation, crystalline phase incorporation, and gel layer retention. This paper reviews current understanding and uncertainties.

  19. Oxynitride Thin Film Barriers for PV Packaging

    SciTech Connect

    Glick, S. H.; delCueto, J. A.; Terwilliger, K. M.; Jorgensen, G. J.; Pankow, J. W.; Keyes, B. M.; Gedvilas, L. M.; Pern, F. J.

    2005-11-01

    Dielectric thin-film barrier and adhesion-promoting layers consisting of silicon oxynitride materials (SiOxNy, with various stoichiometry) were investigated. For process development, films were applied to glass (TCO, conductive SnO2:F; or soda-lime), polymer (PET, polyethylene terephthalate), aluminized soda-lime glass, or PV cell (a-Si, CIGS) substrates. Design strategy employed de-minimus hazard criteria to facilitate industrial adoption and reduce implementation costs for PV manufacturers or suppliers. A restricted process window was explored using dilute compressed gases (3% silane, 14% nitrous oxide, 23% oxygen) in nitrogen (or former mixtures, and 11.45% oxygen mix in helium and/or 99.999% helium dilution) with a worst-case flammable and non-corrosive hazard classification. Method employed low radio frequency (RF) power, less than or equal to 3 milliwatts per cm2, and low substrate temperatures, less than or equal to 100 deg C, over deposition areas less than or equal to 1000 cm2. Select material properties for barrier film thickness (profilometer), composition (XPS/FTIR), optical (refractive index, %T and %R), mechanical peel strength and WVTR barrier performance are presented.

  20. Barrier Coatings for Refractory Metals and Superalloys

    SciTech Connect

    SM Sabol; BT Randall; JD Edington; CJ Larkin; BJ Close

    2006-02-23

    In the closed working fluid loop of the proposed Prometheus space nuclear power plant (SNPP), there is the potential for reaction of core and plant structural materials with gas phase impurities and gas phase transport of interstitial elements between superalloy and refractory metal alloy components during service. Primary concerns are surface oxidation, interstitial embrittlement of refractory metals and decarburization of superalloys. In parallel with kinetic investigations, this letter evaluates the ability of potential coatings to prevent or impede communication between reactor and plant components. Key coating requirements are identified and current technology coating materials are reviewed relative to these requirements. Candidate coatings are identified for future evaluation based on current knowledge of design parameters and anticipated environment. Coatings were identified for superalloys and refractory metals to provide diffusion barriers to interstitial transport and act as reactive barriers to potential oxidation. Due to their high stability at low oxygen potential, alumina formers are most promising for oxidation protection given the anticipated coolant gas chemistry. A sublayer of iridium is recommended to provide inherent diffusion resistance to interstitials. Based on specific base metal selection, a thin film substrate--coating interdiffusion barrier layer may be necessary to meet mission life.

  1. Stability of barrier buckets with zero RF-barrier separations

    SciTech Connect

    Ng, K.Y.; /Fermilab

    2005-03-01

    A barrier bucket with very small separation between the rf barriers (relative to the barrier widths) or even zero separation has its synchrotron tune decreasing rather slowly from a large value towards the boundary of the bucket. As a result, large area at the bucket edges can become unstable under the modulation of rf voltage and/or rf phase. In addition, chaotic regions may form near the bucket center and extend outward under increasing modulation. Application is made to those barrier buckets used in the process of momentum mining at the Fermilab Recycler Ring.

  2. Nanomedicine Faces Barriers

    PubMed Central

    Debbage, Paul; Thurner, Gudrun C.

    2010-01-01

    Targeted nanoparticles have the potential to improve drug delivery efficiencies by more than two orders of magnitude, from the ~ 0.1% which is common today. Most pharmacologically agents on the market today are small drug molecules, which diffuse across the body’s blood-tissue barriers and distribute not only into the lesion, but into almost all organs. Drug actions in the non-lesion organs are an inescapable part of the drug delivery principle, causing “side-effects” which limit the maximally tolerable doses and result in inadequate therapy of many lesions. Nanoparticles only cross barriers by design, so side-effects are not built into their mode of operation. Delivery rates of almost 90% have been reported. This review examines the significance of these statements and checks how far they need qualification. What type of targeting is required? Is a single targeting sufficient? What new types of clinical challenge, such as immunogenicity, might attend the use of targeted nanoparticles?

  3. Synthetic Eelgrass Oil Barrier

    NASA Astrophysics Data System (ADS)

    Curtis, T. G.

    2013-05-01

    Although surviving in situ micro-organisms eventually consume spilled oil, extensive inundation of shore biota by oil requires cleanup to enable ecological recovery within normal time scales. Although effective in calm seas and quiet waters, oil is advected over and under conventional curtain oil booms by wave actions and currents when seas are running. Most sorbent booms are not reusable, and are usually disposed of in landfills, creating excessive waste. A new concept is proposed for a floating oil barrier, to be positioned off vulnerable coasts, to interdict, contain, and sequester spilled oil, which can then be recovered and the barrier reused. While conventional oil boom designs rely principally on the immiscibility of oil in water and its relative buoyancy, the new concept barrier avoids the pitfalls of the former by taking advantage of the synergistic benefits of numerous fluid and material properties, including: density, buoyancy, elasticity, polarity, and surface area to volume ratio. Modeled after Zostera marina, commonly called eelgrass, the new barrier, referred to as synthetic eelgrass (SE), behaves analogously. Eelgrass has very long narrow, ribbon-like, leaves which support periphyton, a complex matrix of algae and heterotrophic microbes, which position themselves there to extract nutrients from the seawater flowing past them. In an analogous fashion, oil on, or in, seawater, which comes in contact with SE, is adsorbed on the surface and sequestered there. Secured to the bottom, in shoal waters, SE rises to the surface, and, if the tide is low enough, floats on the sea surface down wind, or down current to snare floating oil. The leaves of SE, called filaments, consist of intrinsically buoyant strips of ethylene methyl acrylate, aka EMA. EMA, made of long chain, saturated, hydrocarbon molecules with nearly homogeneous electron charge distributions, is a non-polar material which is oleophilic and hydrophobic. Oil must be in close proximity to the

  4. Thermal barrier coating life prediction model development

    NASA Technical Reports Server (NTRS)

    Sheffler, K. D.; Demasi, J. T.

    1985-01-01

    A methodology was established to predict thermal barrier coating life in an environment simulative of that experienced by gas turbine airfoils. Specifically, work is being conducted to determine failure modes of thermal barrier coatings in the aircraft engine environment. Analytical studies coupled with appropriate physical and mechanical property determinations are being employed to derive coating life prediction model(s) on the important failure mode(s). An initial review of experimental and flight service components indicates that the predominant mode of TBC failure involves thermomechanical spallation of the ceramic coating layer. This ceramic spallation involves the formation of a dominant crack in the ceramic coating parallel to and closely adjacent to the metal-ceramic interface. Initial results from a laboratory test program designed to study the influence of various driving forces such as temperature, thermal cycle frequency, environment, and coating thickness, on ceramic coating spalling life suggest that bond coat oxidation damage at the metal-ceramic interface contributes significantly to thermomechanical cracking in the ceramic layer. Low cycle rate furnace testing in air and in argon clearly shows a dramatic increase of spalling life in the non-oxidizing environments.

  5. Performing a local barrier operation

    DOEpatents

    Archer, Charles J; Blocksome, Michael A; Ratterman, Joseph D; Smith, Brian E

    2014-03-04

    Performing a local barrier operation with parallel tasks executing on a compute node including, for each task: retrieving a present value of a counter; calculating, in dependence upon the present value of the counter and a total number of tasks performing the local barrier operation, a base value, the base value representing the counter's value prior to any task joining the local barrier; calculating, in dependence upon the base value and the total number of tasks performing the local barrier operation, a target value of the counter, the target value representing the counter's value when all tasks have joined the local barrier; joining the local barrier, including atomically incrementing the value of the counter; and repetitively, until the present value of the counter is no less than the target value of the counter: retrieving the present value of the counter and determining whether the present value equals the target value.

  6. Performing a local barrier operation

    DOEpatents

    Archer, Charles J; Blocksome, Michael A; Ratterman, Joseph D; Smith, Brian E

    2014-03-04

    Performing a local barrier operation with parallel tasks executing on a compute node including, for each task: retrieving a present value of a counter; calculating, in dependence upon the present value of the counter and a total number of tasks performing the local barrier operation, a base value of the counter, the base value representing the counter's value prior to any task joining the local barrier; calculating, in dependence upon the base value and the total number of tasks performing the local barrier operation, a target value, the target value representing the counter's value when all tasks have joined the local barrier; joining the local barrier, including atomically incrementing the value of the counter; and repetitively, until the present value of the counter is no less than the target value of the counter: retrieving the present value of the counter and determining whether the present value equals the target value.

  7. Problems in characterizing barrier performance

    NASA Technical Reports Server (NTRS)

    Jordan, Harry F.

    1988-01-01

    The barrier is a synchronization construct which is useful in separating a parallel program into parallel sections which are executed in sequence. The completion of a barrier requires cooperation among all executing processes. This requirement not only introduces the wait for the slowest process delay which is inherent in the definition of the synchronization, but also has implications for the efficient implementation and measurement of barrier performance in different systems. Types of barrier implementation and their relationship to different multiprocessor environments are described. Then the problem of measuring the performance of barrier implementations on specific machine architecture is discussed. The fact that the barrier synchronization requires the cooperation of all processes makes the problem of performance measurement similarly global. Making non-intrusive measurements of sufficient accuracy can be tricky on systems offering only rudimentary measurement tools.

  8. Tunnel magnetoresistance properties and film structures of double MgO barrier magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Gan, H. D.; Ikeda, S.; Shiga, W.; Hayakawa, J.; Miura, K.; Yamamoto, H.; Hasegawa, H.; Matsukura, F.; Ohkubo, T.; Hono, K.; Ohno, H.

    2010-05-01

    The authors fabricated double MgO barrier magnetic tunnel junctions (MTJs) with 3-nm-thick Co40Fe40B20 free layer. When annealed at 350 °C, tunnel magnetoresistance (TMR) ratio at room temperature was 130%, much lower than that (297%) of single MgO barrier MTJs processed and annealed under the same condition. The middle CoFeB free layer sandwiched between the two MgO barriers was found to be mostly amorphous. Replacement of the Co40Fe40B20 free layer by a highly oriented Co50Fe50 layer and a composite Co50Fe50/Co40Fe40B20 layer led to the enhanced TMR ratios up to 165% and 212% at annealing temperature of 350 °C, respectively.

  9. Collective Phenomena In Volume And Surface Barrier Discharges

    NASA Astrophysics Data System (ADS)

    Kogelschatz, U.

    2010-07-01

    Barrier discharges are increasingly used as a cost-effective means to produce non-equilibrium plasmas at atmospheric pressure. This way, copious amounts of electrons, ions, free radicals and excited species can be generated without appreciable gas heating. In most applications the barrier is made of dielectric material. In laboratory experiments also the use of resistive, ferroelectric and semiconducting materials has been investigated, also porous ceramic layers and dielectric barriers with controlled surface conductivity. Major applications utilizing mainly dielectric barriers include ozone generation, surface cleaning and modification, polymer and textile treatment, sterilization, pollution control, CO2 lasers, excimer lamps, plasma display panels (flat TV screens). More recent research efforts are also devoted to biomedical applications and to plasma actuators for flow control. Sinu- soidal feeding voltages at various frequencies as well as pulsed excitation schemes are used. Volume as well as surface barrier discharges can exist in the form of filamentary, regularly patterned or laterally homogeneous discharges. Reviews of the subject and the older literature on barrier discharges were published by Kogelschatz (2002, 2003), by Wagner et al. (2003) and by Fridman et al. (2005). A detailed discussion of various properties of barrier discharges can also be found in the recent book "Non-Equilibrium Air Plasmas at Atmospheric Pressure" by Becker et al. (2005). The physical effects leading to collective phenomena in volume and surface barrier discharges will be discussed in detail. Special attention will be given to self-organization of current filaments. Main similarities and differences of the two types of barrier discharges will be elaborated.

  10. Multilayer Article Characterized by Low Coefficient of Thermal Expansion Outer Layer

    NASA Technical Reports Server (NTRS)

    Lee, Kang N. (Inventor)

    2004-01-01

    A multilayer article comprises a substrate comprising a ceramic or a silicon-containing metal alloy. The ceramic is a Si-containing ceramic or an oxide ceramic with or without silicon. An outer layer overlies the substrate and at least one intermediate layer is located between the outer layer and thc substrate. An optional bond layer is disposed between thc 1 least one intermediate layer and thc substrate. The at least one intermediate layer may comprise an optional chemical barrier layer adjacent the outer layer, a mullite-containing layer and an optional chemical barrier layer adjacent to the bond layer or substrate. The outer layer comprises a compound having a low coefficient of thermal expansion selected from one of the following systems: rare earth (RE) silicates; at least one of hafnia and hafnia-containing composite oxides; zirconia-containing composite oxides and combinations thereof.

  11. Dye-sensitized Schottky barrier solar cells

    DOEpatents

    Skotheim, Terje A.

    1978-01-01

    A low-cost dye-sensitized Schottky barrier solar cell comprised of a substrate of semiconductor with an ohmic contact on one face, a sensitizing dye adsorbed onto the opposite face of the semiconductor, a transparent thin-film layer of a reducing agent over the dye, and a thin-film layer of metal over the reducing agent. The ohmic contact and metal layer constitute electrodes for connection to an external circuit and one or the other or both are made transparent to permit light to penetrate to the dye and be absorbed therein for generating electric current. The semiconductor material chosen to be the substrate is one having a wide bandgap and which therefore is transparent; the dye selected is one having a ground state within the bandgap of the semiconductor to generate carriers in the semiconductor, and a first excited state above the conduction band edge of the semiconductor to readily conduct electrons from the dye to the semiconductor; the reducing agent selected is one having a ground state above the ground state of the sensitizer to provide a plentiful source of electrons to the dye during current generation and thereby enhance the generation; and the metal for the thin-film layer of metal is selected to have a Fermi level in the vicinity of or above the ground state of the reducing agent to thereby amply supply electrons to the reducing agent.

  12. Irritants and Skin Barrier Function.

    PubMed

    Angelova-Fischer, Irena

    2016-01-01

    The barrier response to irritant challenge involves complex biologic events and can be modulated by various environmental, exposure and host-related factors. Irritant damage to the epidermal barrier elicits a cascade of homeostatic or pathologic responses that could be investigated by both in vitro and in vivo methods providing different information at biochemical and functional level. The present chapter summarizes the changes in key barrier function parameters following irritant exposure with focus on experimental controlled in vivo human skin studies.

  13. Barrier immunity and IL-17

    PubMed Central

    Marks, Benjamin R.; Craft, Joe

    2009-01-01

    CD4+ TH17 cells display a featured role in barrier immunity. This effector population of T cells is important for clearance of microorganisms but can also promote autoimmunity at barrier sites. Recent work has indicated that these effector cells share a pathway with CD4+ regulatory T cells (TR cells) that also have a critical function in barrier protection and immune regulation. The development and function of TH17 cells, and their relationship with TR cells are discussed. PMID:19386512

  14. Instabilities in a Layer-Multiplying Device

    NASA Astrophysics Data System (ADS)

    Sollogoub, Cyrille; Grandmontagne, Anne; Guinault, Alain

    2011-01-01

    The application of a layer-multiplying device to coextrusion has resulted in a process, called microlayer coextrusion, producing films with ten to thousands of layers of two different polymers. It was shown that this device is quite versatile and can be used to produce new layered systems with improved mechanical, optical, electrical and barrier properties. However, instabilities may occur in the feedblock and/or the layer multiplying unit, affecting the uniformity and the continuity of the created layers. Those instabilities have been widely studied for classical systems with three to five layer structures, while very few studies deal with microlayer coextrusion process. The aim of this paper is to study the flow instabilities in multilayered films. In particular, the role of polymer properties and the effect of some parameters, such as the viscosity ratio, will be investigated.

  15. Transparency, gas barrier, and moisture resistance of large-aspect-ratio vermiculite nanobrick wall thin films.

    PubMed

    Priolo, Morgan A; Holder, Kevin M; Greenlee, Stephen M; Grunlan, Jaime C

    2012-10-24

    The ability to incorporate large-aspect-ratio vermiculite (VMT) clay into thin films fabricated using the layer-by-layer assembly techinique is reported for the first time. Thin films of branched polyethylenimine (PEI) and VMT were analyzed for their growth rate, clay composition, transparency, and gas barrier behavior. These films consist of >96 wt% clay, are >95% transparent, and, because of their nanobrick wall structure, exhibit super gas barrier behavior at thicknesses of <165 nm. When coupled with flexibility, the optical clarity and super barrier that these coatings can impart make them superb candidates for a variety of packaging applications.

  16. Barriers of the peripheral nerve

    PubMed Central

    Peltonen, Sirkku; Alanne, Maria; Peltonen, Juha

    2013-01-01

    This review introduces the traditionally defined anatomic compartments of the peripheral nerves based on light and electron microscopic topography and then explores the cellular and the most recent molecular basis of the different barrier functions operative in peripheral nerves. We also elucidate where, and how, the homeostasis of the normal human peripheral nerve is controlled in situ and how claudin-containing tight junctions contribute to the barriers of peripheral nerve. Also, the human timeline of the development of the barriers of the peripheral nerve is depicted. Finally, potential future therapeutic modalities interfering with the barriers of the peripheral nerve are discussed. PMID:24665400

  17. Silicon Carbide Schottky Barrier Diode

    NASA Technical Reports Server (NTRS)

    Zhao, Jian H.; Sheng, Kuang; Lebron-Velilla, Ramon C.

    2004-01-01

    This chapter reviews the status of SiC Schottky barrier diode development. The fundamental of Schottky barrier diodes is first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes, and merged-pin-Schottky diodes. The development history is reviewed ad the key performance parameters are discussed. Applications of SiC SBDs in power electronic circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.

  18. Zinc reduces epithelial barrier compromise induced by human seminal plasma

    PubMed Central

    Mullin, James M.; Diguilio, Katherine M.; Valenzano, Mary C.; Deis, Rachael; Thomas, Sunil; Zurbach, E. Peter; Abdulhaqq, Shaheed; Montaner, Luis J.

    2017-01-01

    Human semen has the potential to modulate the epithelial mucosal tissues it contacts, as seminal plasma (SP) is recognized to contain both pro- and anti-barrier components, yet its effects on epithelial barrier function are largely unknown. We addressed the role of human SP when exposed to the basal-lateral epithelial surface, a situation that would occur clinically with prior mechanical or disease-related injury of the human epithelial mucosal cell layers in contact with semen. The action of SP on claudins-2, -4, -5, and -7 expression, as well as on a target epithelium whose basolateral surface has been made accessible to SP, showed upregulation of claudins-4 and -5 in CACO-2 human epithelial cell layers, despite broad variance in SP-induced modulation of transepithelial electrical resistance and mannitol permeability. Upregulation of claudin-2 by SP also exhibited such variance by SP sample. We characterize individual effects on CACO-2 barrier function of nine factors known to be present abundantly in seminal plasma (zinc, EGF, citrate, spermine, fructose, urea, TGF, histone, inflammatory cytokines) to establish that zinc, spermine and fructose had significant potential to raise CACO-2 transepithelial resistance, whereas inflammatory cytokines and EGF decreased this measure of barrier function. The role of zinc as a dominant factor in determining higher levels of transepithelial resistance and lower levels of paracellular leak were confirmed by zinc chelation and exogenous zinc addition. As expected, SP presentation to the basolateral cell surface also caused a very dramatic yet transient elevation of pErk levels. Results suggest that increased zinc content in SP can compete against the barrier-compromising effect of negative modulators in SP when SP gains access to that epithelium’s basolateral surface. Prophylactic elevation of zinc in an epithelial cell layer prior to contact by SP may help to protect an epithelial barrier from invasion by SP-containing STD

  19. Analytical investigation of thermal barrier coatings for advanced power generation combustion turbines

    NASA Technical Reports Server (NTRS)

    Amos, D. J.

    1977-01-01

    An analytical evaluation was conducted to determine quantitatively the improvement potential in cycle efficiency and cost of electricity made possible by the introduction of thermal barrier coatings to power generation combustion turbine systems. The thermal barrier system, a metallic bond coat and yttria stabilized zirconia outer layer applied by plasma spray techniques, acts as a heat insulator to provide substantial metal temperature reductions below that of the exposed thermal barrier surface. The study results show the thermal barrier to be a potentially attractive means for improving performance and reducing cost of electricity for the simple, recuperated, and combined cycles evaluated.

  20. Layered CU-based electrode for high-dielectric constant oxide thin film-based devices

    DOEpatents

    Auciello, Orlando

    2010-05-11

    A layered device including a substrate; an adhering layer thereon. An electrical conducting layer such as copper is deposited on the adhering layer and then a barrier layer of an amorphous oxide of TiAl followed by a high dielectric layer are deposited to form one or more of an electrical device such as a capacitor or a transistor or MEMS and/or a magnetic device.