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Sample records for algaas semiconductor laser

  1. Average power constraints in AlGaAs semiconductor lasers under pulse-position-modulation conditions

    NASA Technical Reports Server (NTRS)

    Katz, J.

    1986-01-01

    In some optical communications systems there are advantages to using low duty-cycle pulsed modulation formats such as pulse-position-modulation. However, because of intrinsic limitations of AlGaAs semiconductor lasers, the average power that they can deliver in a pulsed mode of operation is lower than in a CW mode. The magnitude of this problem and its implications are analyzed in this letter, and one possible solution is mentioned.

  2. The 1.1 micrometer and visible emission semiconductor diode lasers. [(AlGa)As lasers

    NASA Technical Reports Server (NTRS)

    Ladany, I.; Nuese, C. J.; Kressel, H.

    1978-01-01

    In (AlGa)As, the first of three alloy systems studied, Continuous Wave (CW) operation was obtained at room temperature at a wavelength as low as 7260 A. Reliability in this system was studied in the incoherent mode. Zinc doped devices had significant degradation, whereas Ge or Ge plus Zi doped devices had none. The Al2O3 facet coatings were shown to significantly reduce facet deterioration in all types of lasers, longer wavelength units of that type having accumulated (at the time of writing) 22,000 hours with little if any degradation. A CL study of thin (AlGa)As layers revealed micro fluctuation in composition. A macro-scale fluctuation was observed by electroreflectance. An experimental and theoretical study of the effect of stripe width on the threshold current was carried out. Emission below 7000 A was obtained in VPE grown Ga(AsP) (In,Ga)P with CW operation at 10 C. Lasers and LED's were made by LPE in (InGa) (AsP). Laser thresholds of 5 kA/cm2 were obtained, while LED efficiences were on the order of 2%. Incoherent life test over 6000 hours showed no degradation.

  3. High-power single spatial mode AlGaAs channeled-substrate-planar semiconductor diode lasers for spaceborne communications

    NASA Technical Reports Server (NTRS)

    Connolly, J. C.; Carlin, D. B.; Ettenberg, M.

    1989-01-01

    A high power single spatial mode channeled substrate planar AlGaAs semiconductor diode laser was developed. The emission wavelength was optimized at 860 to 880 nm. The operating characteristics (power current, single spatial mode behavior, far field radiation patterns, and spectral behavior) and results of computer modeling studies on the performance of the laser are discussed. Reliability assessment at high output levels is included. Performance results on a new type of channeled substrate planar diode laser incorporating current blocking layers, grown by metalorganic chemical vapor deposition, to more effectively focus the operational current to the lasing region was demonstrated. The optoelectronic behavior and fabrication procedures for this new diode laser are discussed. The highlights include single spatial mode devices with up to 160 mW output at 8600 A, and quantum efficiencies of 70 percent (1 W/amp) with demonstrated operating lifetimes of 10,000 h at 50 mW.

  4. Improved degradation resistance of (AlGa)As lasers

    NASA Technical Reports Server (NTRS)

    Kressel, H.; Ladany, J.

    1980-01-01

    Simultaneous doping with Ge and Zn improves degradation resistance of short-wavelength (AlGa)As lasers. Method opens up prospects for greatly increased reliability in lasers and LED's operating at 7,500 angstroms or below.

  5. AlGaAs heterojunction lasers

    NASA Technical Reports Server (NTRS)

    Goldstein, B.; Pultz, G. N.; Carlin, D. B.; Slavin, S. E.; Ettenberg, M.

    1988-01-01

    The characterization of 8300 A lasers was broadened, especially in the area of beam quality. Modulation rates up to 2 Gbit/sec at output powers of 20 mW were observed, waveform fidelity was fully adequate for low BER data transmission, and wavefront measurements showed that phase aberrations were less than lamda/50. Also, individually addressable arrays of up to ten contiguous diode lasers were fabricated and tested. Each laser operates at powers up to 30 mW CW in single spatial mode. Shifting the operating wavelength of the basic CSP laser from 8300 A to 8650 A was accomplished by the addition of Si to the active region. Output power has reached 100 mW single mode, with excellent far field wave front properties. Operating life is currently approx. 1000 hrs at 35 mW CW. In addition, laser reliability, for operation at both 8300 A and 8650 A, has profited significantly from several developments in the processing procedures.

  6. AlGaAs diode pumped tunable chromium lasers

    DOEpatents

    Krupke, William F.; Payne, Stephen A.

    1992-01-01

    An all-solid-state laser system is disclosed wherein the laser is pumped in the longwave wing of the pump absorption band. By utilizing a laser material that will accept unusually high dopant concentrations without deleterious effects on the crystal lattice one is able to compensate for the decreased cross section in the wing of the absorption band, and the number of pump sources which can be used with such a material increases correspondingly. In a particular embodiment a chromium doped colquiriite-structure crystal such as Cr:LiSrAlF.sub.6 is the laser material. The invention avoids the problems associated with using AlGaInP diodes by doping the Cr:LiSrAlF.sub.6 heavily to enable efficient pumping in the longwave wing of the absorption band with more practical AlGaAs diodes.

  7. The reliability of /AlGa/As CW laser diodes

    NASA Astrophysics Data System (ADS)

    Ettenberg, M.; Kressel, H.

    1980-02-01

    Major factors bearing on the reliability of (AlGa)As CW laser diodes are reviewed with attention given to the degradation modes of facet mirror damage, contact degradation, and internal damage. Detailed results are provided for the oxide-defined stripe-contact double-heterojunction lasers operated for more than 40,000 h with extrapolations indicating a median time to failure between 100,000 and 1,000,000. Facet damage and contact degradation appear to be under control, and internal damage remains the dominant failure mechanism. Most of the data deals with threshold current increase; however, shifts in far-field pattern and changes in laser modulation characteristics, including self-sustained oscillations, may affect laser performance in real systems.

  8. Selective oxidation of buried AlGaAs for fabrication of vertical-cavity lasers

    SciTech Connect

    Choquette, K.D.; Geib, K.M.; Chui, H.C.; Hou, H.Q.; Hull, R.

    1996-06-01

    The authors discuss the selective conversion of buried layers of AlGaAs to a stable oxide and the implementation of this oxide into high performance vertical-cavity surface emitting lasers (VCSELs). The rate of lateral oxidation is shown to be linear with an Arrhenius temperature dependence. The measured activation energies vary with Al composition, providing a high degree of oxidation selectivity between AlGaAs alloys. Thus buried oxide layers can be selectively fabricated within the VCSEL through small compositional variations in the AlGaAs layers. The oxidation of AlGaAs alloys, as opposed to AlAs, is found to provide robust processing of reliable lasers. The insulating and low refractive index oxide provides enhanced electrical and optical confinement for ultralow threshold currents in oxide-apertured VCSELs.

  9. AlGaAs phased array laser for optical communications

    NASA Technical Reports Server (NTRS)

    Carlson, N. W.

    1989-01-01

    Phased locked arrays of multiple AlGaAs diode laser emitters were investigated both in edge emitting and surface emitting configurations. CSP edge emitter structures, coupled by either evanescent waves or Y-guides, could not achieve the required powers (greater than or similar to 500 mW) while maintaining a diffraction limited, single lobed output beam. Indeed, although the diffraction limit was achieved in this type of device, it was at low powers and in the double lobed radiation pattern characteristic of out-of-phase coupling. Grating surface emitting (GSE) arrays were, therefore, investigated with more promising results. The incorporation of second order gratings in distribute Bragg reflector (DBR) structures allows surface emission, and can be configured to allow injection locking and lateral coupling to populate 2-D arrays that should be able to reach power levels commensurate with the needs of high performance, free space optical communications levels. Also, a new amplitude modulation scheme was developed for GSE array operation.

  10. Semiconductor lasers for space sensor applications

    NASA Technical Reports Server (NTRS)

    Katz, Joseph

    1988-01-01

    Despite their intrinsic power limitations, semiconductor laser diodes are essential for laser-based spaceborne sensor systems covering a wide spectral range, fulfilling such roles as pumping and injection-locking. They may also be used as direct sources in shorter-range operations. AlGaAs laser arrays have been developed for 810-nm band pumping in Nd:YAG lasers otherwise emitting at 1.064 nm. Additional roles include their use as low-power injection seeds, locking a solid-state laser into a specific desired wavelength.

  11. Narrow divergence, single quantum well, separate confinement, AlGaAs laser

    SciTech Connect

    Haw, T.E.; Williams, J.E.; Wober, M.A.

    1991-01-29

    This patent describes a improvement in a structure for a narrow divergence, single quantum well, separate confinement, laser. It comprises: an n-AlGaAs cladding epitaxial layer, a first AlGaAs waveguide epitaxial layer, a GaAs quantum well active epitaxial layer, a second AlGaAs waveguide epitaxial layer, a p-AlGaAs cladding epitaxial layer, and a GaAs cap epitaxial layer, all sequentially grown with respect to each other. The improvement comprises: the n-AlGaAs cladding layer dimensioned to a thickness which is greater than 2 microns and doped to a density less than 5 {times} 10{sup 18}/cm{sup 3}; the first AlGaAs waveguide layer dimensioned to a thickness in a range between 400 and 700 Angstroms; the GaAs quantum well layer dimensioned to a thickness in a range between 50 and 200 Angstroms; the second AlGaAs waveguide layer dimensioned to a thickness in a range between 400 and 700 Angstroms; and the p-AlGaAs cladding layer dimensioned to a thickness which is greater than 2.0 microns and doped to a density less than 5 {times} 10{sup 18}/cm{sup 3}.

  12. Visible-wavelength semiconductor lasers and arrays

    DOEpatents

    Schneider, Jr., Richard P.; Crawford, Mary H.

    1996-01-01

    A visible semiconductor laser. The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1.lambda.) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%.

  13. High-power AlGaAs channeled substrate planar diode lasers for spaceborne communications

    NASA Technical Reports Server (NTRS)

    Connolly, J. C.; Goldstein, B.; Pultz, G. N.; Slavin, S. E.; Carlin, D. B.; Ettenberg, M.

    1988-01-01

    A high power channeled substrate planar AlGaAs diode laser with an emission wavelength of 8600 to 8800 A was developed. The optoelectronic behavior (power current, single spatial and spectral behavior, far field characteristics, modulation, and astigmatism properties) and results of computer modeling studies on the performance of the laser are discussed. Lifetest data on these devices at high output power levels is also included. In addition, a new type of channeled substrate planar laser utilizing a Bragg grating to stabilize the longitudinal mode was demonstrated. The fabrication procedures and optoelectronic properties of this new diode laser are described.

  14. Single-growth embedded epitaxy AlGaAs injection lasers with extremely low threshold currents

    SciTech Connect

    Katz, J.; Margalit, S.; Wilt, D.; Chen, P.C.; Yariv, A.

    1980-12-01

    A new type of strip-geometry AlGaAs double-heterostructure laser with an embedded optical waveguide has been developed. The new structure is fabricated using a single step of epitaxial growth. Lasers with threshold currents as low as 9.5 mA (150 ..mu..m long) were obtained. These lasers exhibit operation in a single spatial and longitudinal mode, have differential quantum efficiencies exceeding 45%, and a characteristic temperature of 175/sup 0/ C. They emit more than 12 mW/facet of optical power without any kinks.

  15. Visible-wavelength semiconductor lasers and arrays

    DOEpatents

    Schneider, R.P. Jr.; Crawford, M.H.

    1996-09-17

    The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1{lambda}) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%. 5 figs.

  16. Laser-Assisted Growth Of AlGaAs Films

    NASA Technical Reports Server (NTRS)

    Warner, Joseph D.; Wilt, David M.; Pouch, John J.; Aron, Paul R.

    1989-01-01

    Films of aluminum gallium arsenide grown on gallium arsenide by laser-assisted organometallic chemical-vapor deposition. Films single-crystal and contain no detectable oxygen or carbon. Laser beam impinges on substrate in quartz reaction chamber surrounded by radio-frequency induction coils. Film grows much more rapidly at 500 degree C than 450 degree C. Slight amount of interfacial oxygen detectable in film deposited at lower temperature.

  17. AlGaAs growth by OMCVD using an excimer laser

    SciTech Connect

    Warner, J.D.; Wilt, D.M.; Pouch, J.J.; Aron, P.R.

    1986-12-01

    AlGaAs has been grown on GaAs by laser assisted OMCVD using an excimer laser, wavelength 193 nm, and a Cambridge OMCVD reactor. Films were grown at temperatures of 450 and 500 C with the laser beam parallel to the surface and impinging onto the surface at 15 deg from parallel. The samples were heated by RF coils while the laser beam was perpendicular to the gas flow. Typical gas flow parameters are 12 slm of H/sub 2/, 15 sccm of Ga(CH3)3, 13 sccm of Al(CH3)3, and a pressure of 250 mbar. The initial energy density of the beam at the surface was 40 mJ/sq cm, the pulse rate was 20 pps, and the growth time was 7 min. The films were analyzed by Auger electron spectroscopy for the aluminum concentration and by TEM for the surface morphology.

  18. AlGaAs growth by OMCVD using an excimer laser

    NASA Technical Reports Server (NTRS)

    Warner, Joseph D.; Wilt, David M.; Pouch, John J.; Aron, Paul R.

    1986-01-01

    AlGaAs has been grown on GaAs by laser assisted OMCVD using an excimer laser, wavelength 193 nm, and a Cambridge OMCVD reactor. Films were grown at temperatures of 450 and 500 C with the laser beam parallel to the surface and impinging onto the surface at 15 deg from parallel. The samples were heated by RF coils while the laser beam was perpendicular to the gas flow. Typical gas flow parameters are 12 slm of H2, 15 sccm of Ga(CH3)3, 13 sccm of Al(CH3)3, and a pressure of 250 mbar. The initial energy density of the beam at the surface was 40 mJ/sq cm, the pulse rate was 20 pps, and the growth time was 7 min. The films were analyzed by Auger electron spectroscopy for the aluminum concentration and by TEM for the surface morphology.

  19. Semiconductor microcavity lasers

    SciTech Connect

    Gourley, P.L.; Wendt, J.R.; Vawter, G.A.; Warren, M.E.; Brennan, T.M.; Hammons, B.E.

    1994-02-01

    New kinds of semiconductor microcavity lasers are being created by modern semiconductor technologies like molecular beam epitaxy and electron beam lithography. These new microcavities exploit 3-dimensional architectures possible with epitaxial layering and surface patterning. The physical properties of these microcavities are intimately related to the geometry imposed on the semiconductor materials. Among these microcavities are surface-emitting structures which have many useful properties for commercial purposes. This paper reviews the basic physics of these microstructured lasers.

  20. Differential absorption lidar measurements of atmospheric water vapor using a pseudonoise code modulated AlGaAs laser. Thesis

    NASA Technical Reports Server (NTRS)

    Rall, Jonathan A. R.

    1994-01-01

    Lidar measurements using pseudonoise code modulated AlGaAs lasers are reported. Horizontal path lidar measurements were made at night to terrestrial targets at ranges of 5 and 13 km with 35 mW of average power and integration times of one second. Cloud and aerosol lidar measurements were made to thin cirrus clouds at 13 km altitude with Rayleigh (molecular) backscatter evident up to 9 km. Average transmitter power was 35 mW and measurement integration time was 20 minutes. An AlGaAs laser was used to characterize spectral properties of water vapor absorption lines at 811.617, 816.024, and 815.769 nm in a multipass absorption cell using derivative spectroscopy techniques. Frequency locking of an AlGaAs laser to a water vapor absorption line was achieved with a laser center frequency stability measured to better than one-fifth of the water vapor Doppler linewidth over several minutes. Differential absorption lidar measurements of atmospheric water vapor were made in both integrated path and range-resolved modes using an externally modulated AlGaAs laser. Mean water vapor number density was estimated from both integrated path and range-resolved DIAL measurements and agreed with measured humidity values to within 6.5 percent and 20 percent, respectively. Error sources were identified and their effects on estimates of water vapor number density calculated.

  1. AlGaAs ridge laser with 33% wall-plug efficiency at 100 °C based on a design of experiments approach

    NASA Astrophysics Data System (ADS)

    Fecioru, Alin; Boohan, Niall; Justice, John; Gocalinska, Agnieszka; Pelucchi, Emanuele; Gubbins, Mark A.; Mooney, Marcus B.; Corbett, Brian

    2016-04-01

    Upcoming applications for semiconductor lasers present limited thermal dissipation routes demanding the highest efficiency devices at high operating temperatures. This paper reports on a comprehensive design of experiment optimisation for the epitaxial layer structure of AlGaAs based 840 nm lasers for operation at high temperature (100 °C) using Technology Computer-Aided Design software. The waveguide thickness, Al content, doping level, and quantum well thickness were optimised. The resultant design was grown and the fabricated ridge waveguides were optimised for carrier injection and, at 100 °C, the lasers achieve a total power output of 28 mW at a current of 50 mA, a total slope efficiency 0.82 W A-1 with a corresponding wall-plug efficiency of 33%.

  2. Frequency-modulation spectroscopy of rubidium atoms with an AlGaAs diode laser

    SciTech Connect

    Nakanishi, S.; Ariki, H.; Itoh, H.; Kondo, K.

    1987-11-01

    Frequency-modulation (FM) spectroscopy has been performed on the D/sub 2/ transitions of rubidium atoms with an AlGaAs diode laser at 780 nm. Doppler-broadened hyperfine-structure transitions of /sup 85/Rb and /sup 87/Rb were resolved with no residual amplitude-modulation-induced background signal by modulating the injection current of the laser diode at a low frequency (20--50 MHz) compared with the Doppler width. To obtain Doppler-free spectra, we combined FM spectroscopy with saturation spectroscopy. The results show that the FM spectroscopy technique is sensitive and should be useful for high-resolution spectroscopy, although the resolution was instrument limited and unusual double peaks were observed.

  3. Low-temperature laser assisted CBE-growth of AlGaAs

    NASA Astrophysics Data System (ADS)

    Jothilingam, R.; Farrell, T.; Joyce, T. B.; Goodhew, P. J.

    1998-06-01

    We report preliminary studies of low-temperature (335-400°C) chemical beam epitaxial (CBE) growth of Al xGa 1- xAs on GaAs(0 0 1) using triethylgallium (TEG), trimethylaminealane (TMAA) and thermally precracked Arsine (AsH 3) as precursors. We also report results of Ar + laser assisted chemical beam epitaxial growth over the same temperature range. The growth rate for both assisted and unassisted growth as a function of substrate temperature, laser power and precursor beam pressures was determined using laser reflectometry in which the Ar + laser was also used as the probe. In the nonlaser assisted growth Al incorporation is observed to be significantly higher than would be expected at the normal growth temperature of 500°C. With laser assistance the Al concentration, while higher than that at normal growth temperatures, is less than that without laser assistance and the growth rate is higher. These observations, which extended Abernathy's early results to higher nominal Al concentration, are discussed in terms of the relative enhancement of the decomposition of TEG and the alane during laser assistance. Using literature values of the refractive index of AlGaAs alloys at the growth temperature, laser reflectometry was used to monitor both composition and growth rate over a range of growth temperatures. Reflectometry data were compared with the results of Auger Electron Microscopy (AES) and Dektak stylus profiling.

  4. High-power diode-pumped AlGaAs surface-emitting laser.

    PubMed

    Holm, M A; Burns, D; Cusumano, P; Ferguson, A I; Dawson, M D

    1999-09-20

    We report the development and characterization of an efficient diode-pumped surface-emitting semiconductor laser operating at approximately 870 nm. By using a semiconductor Bragg reflector stack/multiple GaAs quantum well structure, mounted within a conventional laser cavity, we achieved single transverse mode laser output powers of 153 mW. Self-tuning over a 15-nm spectral range has been obtained. PMID:18324092

  5. Tunable semiconductor lasers

    NASA Technical Reports Server (NTRS)

    Taghavi-Larigani, Shervin (Inventor); Vanzyl, Jakob J. (Inventor); Yariv, Amnon (Inventor)

    2006-01-01

    Tunable semiconductor lasers are disclosed requiring minimized coupling regions. Multiple laser embodiments employ ring resonators or ring resonator pairs using only a single coupling region with the gain medium are detailed. Tuning can be performed by changing the phase of the coupling coefficient between the gain medium and a ring resonator of the laser. Another embodiment provides a tunable laser including two Mach-Zehnder interferometers in series and a reflector coupled to a gain medium.

  6. High-efficiency TEM(00) continuous-wave (Al,Ga)As epitaxial surface-emitting lasers and effect of half-wave periodic gain

    SciTech Connect

    Gourley, P.L.; Brennan, T.M.; Hammons, B.E.; Corzine, S.W.; Geels, R.S.

    1989-03-27

    This report is on room temperature, continuous-wave (c-w), photopumped operation of (Al,Ga)As surface-emitting lasers grown by molecular beam epitaxy. These monolithic semiconductor lasers comprise two multilayer semiconductor mirrors surrounding a layered active region. In the active region, GaAs quantum wells are spaced with half-wave periodicity to center on standing-wave maxima of the cavity optical field. By comparing threshold data for different lasers grown with and without half-wave periodicity, the first experimental evidence is observed for reduced c-w lasing threshold (as low as 20,000 W/sq cm) with periodic gain in an epitaxial surface-emitting laser. Up to 50 mW with high efficiency (35% total, 80% differential) and narrow spectral linewidth (2 A) have been measured. A very high-quality beam with low divergence (2.5 deg) and circular TEM(00) profile has been observed. All of these observations represent significant advances for surface-emitting laser technology.

  7. High-efficiency TEM/sub 00/ continuous-wave (Al,Ga)As epitaxial surface-emitting lasers and effect of half-wave periodic gain

    SciTech Connect

    Gourley, P.L.; Brennan, T.M.; Hammons, B.E.; Corzine, S.W.; Geels, R.S.; Yan, R.H.; Scott, J.W.; Coldren, L.A.

    1989-03-27

    We report room-temperature, continuous-wave (cw), photopumped operation of (Al,Ga)As surface-emitting lasers grown by molecular beam epitaxy. These monolithic semiconductor lasers comprise two multilayer semiconductor mirrors surrounding a layered active region. In the active region, GaAs quantum wells are spaced with half-wave periodicity to center on standing-wave maxima of the cavity optical field. By comparing threshold data for different lasers grown with and without half-wave periodicity, we observe the first experimental evidence for reduced cw lasing threshold (as low as 2 x 10/sup 4/ W/cm/sup 2/ ) with periodic gain in an epitaxial surface-emitting laser. Up to 50 mW with high efficiency (35% total, 80% differential) and narrow spectral linewidth (2 A) have been measured. A very high quality beam with low divergence (2.5/sup 0/) and circular TEM/sub 00/ profile has been observed. All of these observations represent significant advances for surface-emitting laser technology.

  8. Semiconductor nanowire lasers

    NASA Astrophysics Data System (ADS)

    Eaton, Samuel W.; Fu, Anthony; Wong, Andrew B.; Ning, Cun-Zheng; Yang, Peidong

    2016-06-01

    The discovery and continued development of the laser has revolutionized both science and industry. The advent of miniaturized, semiconductor lasers has made this technology an integral part of everyday life. Exciting research continues with a new focus on nanowire lasers because of their great potential in the field of optoelectronics. In this Review, we explore the latest advancements in the development of nanowire lasers and offer our perspective on future improvements and trends. We discuss fundamental material considerations and the latest, most effective materials for nanowire lasers. A discussion of novel cavity designs and amplification methods is followed by some of the latest work on surface plasmon polariton nanowire lasers. Finally, exciting new reports of electrically pumped nanowire lasers with the potential for integrated optoelectronic applications are described.

  9. Semiconductor cylinder fiber laser

    NASA Astrophysics Data System (ADS)

    Sandupatla, Abhinay; Flattery, James; Kornreich, Philipp

    2015-12-01

    We fabricated a fiber laser that uses a thin semiconductor layer surrounding the glass core as the gain medium. This is a completely new type of laser. The In2Te3 semiconductor layer is about 15-nm thick. The fiber laser has a core diameter of 14.2 μm, an outside diameter of 126 μm, and it is 25-mm long. The laser mirrors consist of a thick vacuum-deposited aluminum layer at one end and a thin semitransparent aluminum layer deposited at the other end of the fiber. The laser is pumped from the side with either light from a halogen tungsten incandescent lamp or a blue light emitting diode flash light. Both the In2Te3 gain medium and the aluminum mirrors have a wide bandwidth. Therefore, the output spectrum consists of a pedestal from a wavelength of about 454 to 623 nm with several peaks. There is a main peak at 545 nm. The main peak has an amplitude of 16.5 dB above the noise level of -73 dB.

  10. High-power fundamental mode AlGaAs quantum well channeled substrate laser grown by molecular beam epitaxy

    SciTech Connect

    Jaeckel, H.; Meier, H.P.; Bona, G.L.; Walter, W.; Webb, D.J.; Van Gieson, E. )

    1989-09-11

    We demonstrate a high-power AlGaAs single quantum well graded-index separate confinement heterojunction laser grown by molecular epitaxy over channeled substrates. Fundamental mode operation up to 130 mW for reflection modified devices has been achieved at a high differential quantum front-facet efficiency of 81%. This device structure allows extremely low threshold currents to 6 mA for power lasers due to the incorporation of lateral current blocking {ital pn} junction by crystallographic plane-dependent doping of amphoteric dopants. We obtained a very high-power continuous-wave fundamental mode operation of this type of laser at extremely low threshold currents and very high overall efficiency of more than 50%. This laser shows considerable potential for are comparable to those of conventional TJS lasers.

  11. Fibre ring cavity semiconductor laser

    SciTech Connect

    Duraev, V P; Medvedev, S V

    2013-10-31

    This paper presents a study of semiconductor lasers having a polarisation maintaining fibre ring cavity. We examine the operating principle and report main characteristics of a semiconductor ring laser, in particular in single- and multiple-frequency regimes, and discuss its application areas. (lasers)

  12. Fabrication of large periodic arrays of AlGaAs microdisks by laser-interference lithography and selective etching

    NASA Astrophysics Data System (ADS)

    Petter, K.; Kipp, T.; Heyn, Ch.; Heitmann, D.; Schuller, C.

    2002-07-01

    By laser-interference lithography, reactive-ion etching, and selective wet-chemical etching using a citric acid-based solution, we have fabricated large periodic arrays of AlGaAs microdisks with periods of 4 mum and disk diameters between 1.5 and 2 mum. The arrays are characterized by temperature-dependent photoluminescence spectroscopy. Taking into account the below-threshold absorption of the quantum wells inside the disks, we get disk quality factors close to the theoretical maximum value. We demonstrate that our technique allows one also to produce one-dimensionally or two-dimensionally coupled arrays of microdisks.

  13. Semiconductor film Cherenkov lasers

    NASA Astrophysics Data System (ADS)

    Walsh, John E.

    1994-12-01

    The technical achievements for the project 'Semiconductor Film Cherenkov Lasers' are summarized. Described in the fourteen appendices are the operation of a sapphire Cherenkov laser and various grating-coupled oscillators. These coherent radiation sources were operated over the spectral range extending from 3 mm down to 400 micrometers. The utility of various types of open, multi-grating resonators and mode-locked operation were also demonstrated. In addition to these experiments, which were carried out with a 10-100 kV pulse generator, a low-energy (3-3.6 MeV) Van de Graaff generator and a low-energy RF linac (2.8 MeV) were used to investigate the properties of continuum incoherent Smith-Purcell radiation. It was shown that levels of intensity comparable to the infrared beam lines on a synchrotron could be obtained and thus that grating-coupled sources are potentially an important new source for Fourier transform spectroscopy. Finally, a scanning electron microscope was adapted for investigating mu-electron-beam-driven far-infrared sources. At the close of the project, spontaneous emission over the 288-800 micrometers band had been observed. Intensity levels were in accord with expectations based on theory. One or more of the Appendices address these topics in detail.

  14. Hysteresis phenomena in the tuning characteristics of semiconductor lasers with a high-Q external cavity

    NASA Astrophysics Data System (ADS)

    Belovolov, M. I.; Dianov, E. M.; Kriukov, A. P.; Pencheva, V. Kh.

    1987-06-01

    A study is made of the hysteresis phenomena and bistability associated with lasing frequency tuning by pump current in an AlGaAs double heterostructure laser. These phenomena are usually observed during the self-stabilization of single-frequency lasing under conditions of high selectivity of the dispersion element in the external cavity and a strong optical freedback. It is suggested that anomalies observed in the tuning characteristics of some semiconductor lasers result from nonstationary thermal waveguide effects due to the adiabatic heating of the active region and self-focusing effects.

  15. Broad interband semiconductor laser diodes

    NASA Astrophysics Data System (ADS)

    Tan, Chee Loon

    A semiconductor laser is a diode device that emits light via stimulated emission. Conventionally, light emitted from a semiconductor laser is spatially coherent or narrowband. The fundamental mechanism of stimulated emission process in general leads only to a single wavelength emission. However, there are some lasers emit light with a broad spectrum or different distinct wavelength subjected to various operating conditions such as external grating configuration with semiconductor laser, diode-pumped self-Q-switch fiber laser, ultrashort pulse excitation, photonic crystal fiber, ultrabroadband solid-state lasers, semiconductor optical amplifier-based multiwavelength tunable fiber lasers, nonlinear crystal, broadband semiconductor laser etc. This type of broadband laser is vital in many practical applications such as optical telecommunications, spectroscopy measurement, imaging technology, etc. Recently, an ultra-broadband semiconductor laser that utilizes intersubband optical transitions via quantum cascade configuration has been realized. Laser action with a Fabry-Perot spectrum covering all wavelengths from 6 to 8 microm simultaneously is demonstrated with this approach. More recently, broadband emission results from interband optical transitions via quantum-dot/dash nanostructures have been demonstrated in a simple p-i-n laser diode structure. To date, this latest approach offers the simplest design by proper engineering of quantized energy states as well as utilizing the high inhomogeneity of the dot/dash nanostructures, which is inherent from self-assembled growth technology. In this dissertation, modeling of semiconductor InGaAs/GaAs quantum-dot broadband laser utilizing the properties of inhomogeneous and homogeneous broadening effects on lasing spectral will be discussed, followed by a detail analysis of another type of broad interband semiconductor laser, which is InAs/InGaAlAs quantum-dash broadband laser. Based on the device characterization results

  16. Tunable Dual Semiconductor Laser

    NASA Technical Reports Server (NTRS)

    Mukai, Seiji; Kapon, Eli; Katz, Joseph; Margalit, Shlomo; Yariv, Amnon

    1987-01-01

    Parallel lasers interact in shared space to alter output wavelength. New device consists of two stripe lasers in aluminum gallium arsenide chip. Parallel stripes close enough so light from lower laser coupled into upper laser and vice versa. Lasers operated by low-duty-cycle current pulses. Lasing threshold of each about 100 mA. Currents controlled independently. Useful in optical communications systems employing wavelength-division multiplexing.

  17. Semiconductor processing with excimer lasers

    SciTech Connect

    Young, R.T.; Narayan, J.; Christie, W.H.; van der Leeden, G.A.; Rothe, D.E.; Cheng, L.J.

    1983-01-01

    The advantages of pulsed excimer lasers for semiconductor processing are reviewed. Extensive comparisons of the quality of annealing of ion-implanted Si obtained with XeCl and ruby lasers have been made. The results indicate that irrespective of the large differences in the optical properties of Si at uv and visible wavelengths, the efficiency of usage of the incident energy for annealing is comparable for the two lasers. However, because of the excellent optical beam quality, the XeCl laser can provide superior control of the surface melting and the resulting junction depth. Furthermore, the concentrations of electrically active point defects in the XeCl laser annealed region are 2 to 3 orders of magnitude lower than that obtained from ruby or Nd:YAG lasers. All these results seem to suggest that XeCl lasers should be suitable for fabricating not only solar cells but also the more advanced device structures required for VLSI or VHSIC applications.

  18. Electron beam pumped semiconductor laser

    NASA Technical Reports Server (NTRS)

    Hug, William F. (Inventor); Reid, Ray D. (Inventor)

    2009-01-01

    Electron-beam-pumped semiconductor ultra-violet optical sources (ESUVOSs) are disclosed that use ballistic electron pumped wide bandgap semiconductor materials. The sources may produce incoherent radiation and take the form of electron-beam-pumped light emitting triodes (ELETs). The sources may produce coherent radiation and take the form of electron-beam-pumped laser triodes (ELTs). The ELTs may take the form of electron-beam-pumped vertical cavity surface emitting lasers (EVCSEL) or edge emitting electron-beam-pumped lasers (EEELs). The semiconductor medium may take the form of an aluminum gallium nitride alloy that has a mole fraction of aluminum selected to give a desired emission wavelength, diamond, or diamond-like carbon (DLC). The sources may be produced from discrete components that are assembled after their individual formation or they may be produced using batch MEMS-type or semiconductor-type processing techniques to build them up in a whole or partial monolithic manner, or combination thereof.

  19. Semiconductor Laser Phased Array

    NASA Technical Reports Server (NTRS)

    Katz, J.

    1985-01-01

    Oscillations synchronized and modulated individually for beam steering. Phased array of GaAs infrared lasers put out powerful electronically-steerable coherent beam. Fabricated as integrated circuit on GaAs chip, new device particularly suited to optical communications, optical data processing and optical detection and ranging systems.

  20. Semiconductor laser-based ranging instrument for earth gravity measurements

    NASA Technical Reports Server (NTRS)

    Abshire, James B.; Millar, Pamela S.; Sun, Xiaoli

    1995-01-01

    A laser ranging instrument is being developed to measure the spatial variations in the Earth's gravity field. It will range in space to a cube corner on a passive co-orbiting sub-satellite with a velocity accuracy of 20 to 50 microns/sec by using AlGaAs lasers intensity modulated at 2 GHz.

  1. Deep-red semiconductor monolithic mode-locked lasers

    SciTech Connect

    Kong, L.; Bajek, D.; White, S. E.; Forrest, A. F.; Cataluna, M. A.; Wang, H. L.; Pan, J. Q.; Wang, X. L.; Cui, B. F.; Ding, Y.

    2014-12-01

    A deep-red semiconductor monolithic mode-locked laser is demonstrated. Multi-section laser diodes based on an AlGaAs multi-quantum-well structure were passively mode-locked, enabling the generation of picosecond optical pulses at 752 nm, at pulse repetition rates of 19.37 GHz. An investigation of the dependence of the pulse duration as a function of reverse bias revealed a predominantly exponential decay trend of the pulse duration, varying from 10.5 ps down to 3.5 ps, which can be associated with the concomitant reduction of absorption recovery time with increasing applied field. A 30-MHz-tunability of the pulse repetition rate with bias conditions is also reported. The demonstration of such a compact, efficient and versatile ultrafast laser in this spectral region paves the way for its deployment in a wide range of applications such as biomedical microscopy, pulsed terahertz generation as well as microwave and millimeter-wave generation, with further impact on sensing, imaging and optical communications.

  2. AlGaAs converters and arrays for laser power beaming

    SciTech Connect

    Khvostikov, Vladimir Sorokina, Svetlana; Potapovich, Nataliia; Khvostikova, Olga; Shvarts, Maxim; Timoshina, Nailya; Andreev, Viacheslav

    2015-09-28

    This study reports on the development of AlGaAs/GaAs-based laser power photovoltaic (PV) converters fabricated by LPE. The monochromatic (λ = 809 nm) conversion efficiency up to 58% is measured for cells with p-n junction in Al{sub 0.07}Ga{sub 0.93}As and low (x = 0.25-0.3) Al concentration ‘window’. Modules, which have converters of low and high power laser radiation and the voltage of 4V, have been designed and fabricated. Comparison of output parameters measured at two different conditions (i.e., under flash lamp and laser beam) has been performed.

  3. AlGaAs converters and arrays for laser power beaming

    NASA Astrophysics Data System (ADS)

    Khvostikov, Vladimir; Sorokina, Svetlana; Potapovich, Nataliia; Khvostikova, Olga; Shvarts, Maxim; Timoshina, Nailya; Andreev, Viacheslav

    2015-09-01

    This study reports on the development of AlGaAs/GaAs-based laser power photovoltaic (PV) converters fabricated by LPE. The monochromatic (λ = 809 nm) conversion efficiency up to 58% is measured for cells with p-n junction in Al0.07Ga0.93As and low (x = 0.25-0.3) Al concentration `window'. Modules, which have converters of low and high power laser radiation and the voltage of 4V, have been designed and fabricated. Comparison of output parameters measured at two different conditions (i.e., under flash lamp and laser beam) has been performed.

  4. Chemical changes accompanying facet degradation of AlGaAs quantum well lasers

    NASA Astrophysics Data System (ADS)

    Houle, F. A.; Neiman, D. L.; Tang, W. C.; Rosen, H. J.

    1992-11-01

    Detailed measurements are reported using high-resolution scanning Auger microscopy of the chemical state of uncoated quantum well (QW) laser facets after brief and intermediate operating times. Analyses or uncoated facets which have suffered catastrophic optical damage (COD) under various operating conditions are described. The data show clearly that initial facet compositions are variable and far from ideal. After operation for as little as 2-10 min, the composition of the facet regions of the active/graded index and cladding layer change markedly, but no single type of change can be linked to COD. In particular, facet oxidation is not uniform or extensive, and facets which suffer COD are not necessarily more oxidized than those which have not. Composition changes are not limited to the facet surface, indicating that elemental redistribution during laser operation is very fast. These results suggest that the process of facet degradation plays a complex role in laser degradation.

  5. Approximate Analysis of Semiconductor Laser Arrays

    NASA Technical Reports Server (NTRS)

    Marshall, William K.; Katz, Joseph

    1987-01-01

    Simplified equation yields useful information on gains and output patterns. Theoretical method based on approximate waveguide equation enables prediction of lateral modes of gain-guided planar array of parallel semiconductor lasers. Equation for entire array solved directly using piecewise approximation of index of refraction by simple functions without customary approximation based on coupled waveguid modes of individual lasers. Improved results yield better understanding of laser-array modes and help in development of well-behaved high-power semiconductor laser arrays.

  6. Microfabrication techniques for semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Tamanuki, Takemasa; Tadokoro, T.; Morito, Ken; Koyama, Fumio; Iga, Kenichi

    1991-03-01

    Several important techniques for fabricating micro-cavity semiconductor lasers including surface emitting lasers have been developed. Reactive ion beam etch (RIBE) for GaA1As and GaInAsP is employed and its condition for vertical fine etch under low damages and removal of residual damages are made clear. Passivation by sulfur is introduced to the fabrication process. Regrowth techniques for DII structures by LPE and MOCVD has been established. Some device applications are discussed. 1. MICRO-ETCHING PROCESS Micro-cavity lasers including a vertical cavity surface emitting laser1 are attracting the research interest for optical parallel processing and parallel light wave systems. In order to realize micron-order or sub-micron laserdevices the technology of micro-fabrication must be established. In this study the total fabrication technology has been almost completed. First fine and low damage etching condition by ultrahigh vacuum background RIBE using a Cl2 gas has been made clear. We have found an isotropic etching condition for the vertical side wall formation and good mask traceability i. e. the acceleration voltage is 500 V and substrate temperature is 150 C with a 5000A thickness Si02 mask. Residual damages induced on the surface and the side wall are characterized by photo-luminescence and making stripe lasers. Figure 1 is the histogram of the nominal threshold current density for (a) oxide-defined stripe lasers (b) RIBE etched and LPE regrown BH-lasers using an LPE grown DII wafer (LPE/LPE) and (c) RIBE etched

  7. Widely tunable hybrid semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Koh, Ping-Chiek; Plumb, Richard G. S.

    1999-04-01

    A new hybrid design tunable semiconductor laser, with a wide tuning range, a narrow linewidth, simple tuning/control algorithms, low variations in output power across its tuning range and simple fabrication, is introduced. This hybrid laser consists of a large spot reflective amplifier (LS-RA) coupled to a Lithium Niobate Acousto-Optic Filter (AOF), giving wavelength selective feedback. The LS-RA waveguide is angled by 10 degrees to the coupling facet, but is normal to the other facet, giving reflectivities of 5 X 10-5 and 3 X 10-1 respectively. This amplifier structure allows maximum coupling to the AOF without stringent alignment tolerance. THe AOF consists of a 2-stage acoustic TE/TM converter with a high TE reflectivity coating at the end. A propagating surface acoustic wave is employed to phase-match the TE and TM modes of a specific wavelength, achieving a narrow-band feedback into the LS-RA. Output power and wavelength of the hybrid laser are controlled by the LS-RA current and RF drive frequency of the AOF respectively. Simulations using a Time-Domain Model and initial experiments have shown that the hybrid laser have a wide tuning range, narrow linewidth, SMSR >= 30 dB and low power variations across its tuning range.

  8. Semiconductor disk laser-pumped subpicosecond holmium fibre laser

    SciTech Connect

    Chamorovskiy, A Yu; Marakulin, A V; Leinonen, T; Kurkov, Andrei S; Okhotnikov, Oleg G

    2012-01-31

    The first passively mode-locked holmium fibre laser has been demonstrated, with a semiconductor saturable absorber mirror (SESAM) as a mode locker. Semiconductor disk lasers have been used for the first time to pump holmium fibre lasers. We obtained 830-fs pulses at a repetition rate of 34 MHz with an average output power of 6.6 mW.

  9. Applications of semiconductor lasers to secure communications

    NASA Astrophysics Data System (ADS)

    Mirasso, Claudio R.

    2000-12-01

    We numerically study the synchronization of two chaotic semiconductor lasers in a master-slave configuration. To synchronize the lasers a small amount of the output power from the master laser is injected into the slave laser. We show that the output of the master laser can be used as a chaotic carrier to encode a digital message which can be recovered at the receiver. We also check the quality of the synchronization diagram when the two lasers are slightly different.

  10. Laser qualification for the Semiconductor Laser Intersatellite Link Experiment (SILEX) program

    NASA Astrophysics Data System (ADS)

    Craig, Richard R.; Li, Benjamin; Chan, Benny

    1994-08-01

    The SDL-5400 series commercial AlGaAs laser diode was characterized and screened for potential use as communication laser in the SILEX program. The lasers were initially tested through environmental extremes and for vacuum reliability to obtain preliminary indications that the laser was suitable to the requirement. Potential flight lasers were then built and screened for use. Endurance testing of samples from the potential flight lot has been completed.

  11. Monolithic AlGaAs second-harmonic nanoantennas.

    PubMed

    Gili, V F; Carletti, L; Locatelli, A; Rocco, D; Finazzi, M; Ghirardini, L; Favero, I; Gomez, C; Lemaître, A; Celebrano, M; De Angelis, C; Leo, G

    2016-07-11

    We demonstrate monolithic aluminum gallium arsenide (AlGaAs) optical nanoantennas. Using a selective oxidation technique, we fabricated epitaxial semiconductor nanocylinders on an aluminum oxide substrate. Second harmonic generation from AlGaAs nanocylinders of 400 nm height and varying radius pumped with femtosecond pulses delivered at 1554-nm wavelength has been measured, revealing a peak conversion efficiency exceeding 10-5 for nanocylinders with an optimized geometry. PMID:27410864

  12. Semiconductor Lasers and Their Application in Optical Fiber Communication.

    ERIC Educational Resources Information Center

    Agrawal, Govind P.

    1985-01-01

    Working principles and operating characteristics of the extremely compact and highly efficient semiconductor lasers are explained. Topics include: the p-n junction; Fabry-Perot cavity; heterostructure semiconductor lasers; materials; emission characteristics; and single-frequency semiconductor lasers. Applications for semiconductor lasers include…

  13. Semiconductor Laser Low Frequency Noise Characterization

    NASA Technical Reports Server (NTRS)

    Maleki, Lute; Logan, Ronald T.

    1996-01-01

    This work summarizes the efforts in identifying the fundamental noise limit in semiconductor optical sources (lasers) to determine the source of 1/F noise and it's associated behavior. In addition, the study also addresses the effects of this 1/F noise on RF phased arrays. The study showed that the 1/F noise in semiconductor lasers has an ultimate physical limit based upon similar factors to fundamental noise generated in other semiconductor and solid state devices. The study also showed that both additive and multiplicative noise can be a significant detriment to the performance of RF phased arrays especially in regard to very low sidelobe performance and ultimate beam steering accuracy. The final result is that a noise power related term must be included in a complete analysis of the noise spectrum of any semiconductor device including semiconductor lasers.

  14. Many-body effects in semiconductor lasers

    SciTech Connect

    Chow, W.W.

    1995-03-01

    A microscopic theory, that is based on the coupled Maxwell-semiconductor-Bloch equations, is used to investigate the effects of many-body Coulomb interactions in semiconductor laser devices. This paper describes two examples where the many-body effects play important roles. Experimental data supporting the theoretical results are presented.

  15. Vertical integration of ultrafast semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Maas, D. J. H. C.; Bellancourt, A.-R.; Rudin, B.; Golling, M.; Unold, H. J.; Südmeyer, T.; Keller, U.

    2007-09-01

    Lasers generating short pulses - referred to as ultrafast lasers - enable many applications in science and technology. Numerous laboratory experiments have confirmed that ultrafast lasers can significantly increase telecommunication data rates [1], improve computer interconnects, and optically clock microprocessors [2, 3]. New applications in metrology [4], supercontinuum generation [5], and life sciences with two-photon microscopy [6] only work with ultrashort pulses but have relied on bulky and complex ultrafast solid-state lasers. Semiconductor lasers are ideally suited for mass production and widespread applications, because they are based on a wafer-scale technology with a high level of integration. Not surprisingly, the first lasers entering virtually every household were semiconductor lasers in compact disk players. Here we introduce a new concept and make the first feasibility demonstration of a new class of ultrafast semiconductor lasers which are power scalable, support both optical and electrical pumping and allow for wafer-scale fabrication. The laser beam propagates vertically (perpendicularly) through the epitaxial layer structure which has both gain and absorber layers integrated. In contrast to edge-emitters, these lasers have semiconductor layers that can be optimized separately by using different growth parameters and with no regrowth. This is especially important to integrate the gain and absorber layers, which require different quantum confinement. A saturable absorber is required for pulse generation and we optimized its parameters with a single self-assembled InAs quantum dot layer at low growth temperatures. We refer to this class of devices as modelocked integrated external-cavity surface emitting lasers (MIXSEL). Vertical integration supports a diffraction-limited circular output beam, transform-limited pulses, lower timing jitter, and synchronization to an external electronic clock. The pulse repetition rate scales from 1-GHz to 100-GHz by

  16. High-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well lasers on Si substrates

    NASA Technical Reports Server (NTRS)

    Kim, Jae-Hoon; Lang, Robert J.; Radhakrishnan, Gouri; Katz, Joseph; Narayanan, Authi A.

    1989-01-01

    A high-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well laser on Si substrates has been demonstrated for the first time by a hybrid growth of migration-enhanced molecular beam epitaxy followed by metalorganic vapor phase epitaxy. The quantum well laser showed an output power of more than 400 mW per facet under pulsed conditions. A room-temperature threshold current of 300 mA was obtained with a differential quantum efficiency of 40 percent without facet coating. The threshold current density was 550 A/sq cm for a cavity length of 500 microns. These results show the highest peak power reported to date for low-threshold lasers on Si substrates. The full width at half maximum of the far-field pattern parallel to the junction was 6 deg. Threshold current densities as low as 250 A/sq cm were obtained for lasers on GaAs substrates.

  17. Compact narrow linewidth semiconductor laser module

    NASA Astrophysics Data System (ADS)

    Poulin, M.; Ayotte, S.; Latrasse, C.; Painchaud, Y.; Cliche, J. F.; Babin, A.; Aubé, M.; Picard, M.; Costin, F.; Têtu, M.; Lafrance, G.

    2009-05-01

    Frequency noise reduction of semiconductor lasers using electrical feedback from an optical frequency discriminator is an efficient and simple approach to realize narrow linewidth lasers. These lasers are of great interest for applications such as LIDAR, RF photonics and interferometric sensing. In this paper, we review the technological choices made by TeraXion for the realization of its Narrow Linewidth Laser modules. The method enables to decrease the linewidth of DFB lasers from several hundreds of kHz to a few kHz. We present the work in progress to integrate such system into a miniature package and to incorporate advanced functionalities such as multi-laser phase locking.

  18. Semiconductor laser gyro with optical frequency dithering

    SciTech Connect

    Prokof'eva, L P; Sakharov, V K; Shcherbakov, V V

    2014-04-28

    The semiconductor laser gyro is described, in which the optical frequency dithering implemented by intracavity phase modulation suppresses the frequency lock-in and provides the interference of multimode radiation. The sensitivity of the device amounted to 10–20 deg h{sup -1}. (laser gyroscopes)

  19. Semiconductor laser with multiple lasing wavelengths

    DOEpatents

    Fischer, Arthur J.; Choquette, Kent D.; Chow, Weng W.

    2003-07-29

    A new class of multi-terminal vertical-cavity semiconductor laser components has been developed. These multi-terminal laser components can be switched, either electrically or optically, between distinct lasing wavelengths, or can be made to lase simultaneously at multiple wavelengths.

  20. Semiconductor laser technology for remote sensing experiments

    NASA Technical Reports Server (NTRS)

    Katz, Joseph

    1988-01-01

    Semiconductor injection lasers are required for implementing virtually all spaceborne remote sensing systems. Their main advantages are high reliability and efficiency, and their main roles are envisioned in pumping and injection locking of solid state lasers. In some shorter range applications they may even be utilized directly as the sources.

  1. Soliton bound states in semiconductor disk laser

    NASA Astrophysics Data System (ADS)

    Viktorov, Evgeny A.; Butkus, Mantas; Erneux, Thomas; Hamilton, Craig J.; Malcolm, Graeme P. A.; Rafailov, Edik U.

    2014-05-01

    We report what we believe is the first demonstration of a temporal soliton bound state in semiconductor disk laser. The laser was passively mode-locked using a quantum dot based semiconductor saturable absorber mirror (QD-SESAM). Two mode-locking regimes were observed where the laser would emit single or closely spaced double pulses (soliton bound state regime) per cavity round-trip. The pulses in soliton bound state regime were spaced by discrete, fixed time duration. We use a system of delay differential equations to model the dynamics of our device.

  2. Actively mode-locked semiconductor lasers

    SciTech Connect

    Bowers, J.E.; Morton, P.A.; Mar, A.; Corzine, S.W.

    1989-06-01

    Measurements of actively mode-locked semiconductor lasers are described and compared to calculations of the mode-locking process using three coupled traveling wave rate equations for the electron and photon densities. The dependence of pulse width on the modulation current and frequency are described. A limitation to minimum achievable pulse widths in mode-locked semiconductor lasers is shown to be dynamic detuning due to gain saturation. Techniques to achieve subpicosecond pulses are described, together with ways to reduce multiple pulse outputs. The amplitude and phase noise of linear and ring cavity semiconductor lasers were measured and found to be tens of dB smaller than YAG and argon lasers and limited by the noise from the microwave oscillator. High-frequency phase noise is only measurable in detuned cavities, and is below -110 dBc (1 Hz) in optimally tuned cavities. The prospects for novel ways to achieve even shorter pulses are discussed.

  3. Semiconductor Laser Tracking Frequency Distance Gauge

    NASA Technical Reports Server (NTRS)

    Phillips, James D.; Reasenberg, Robert D.

    2009-01-01

    Advanced astronomical missions with greatly enhanced resolution and physics missions of unprecedented accuracy will require a spaceworthy laser distance gauge of substantially improved performance. The Tracking Frequency Gauge (TFG) uses a single beam, locking a laser to the measurement interferometer. We have demonstrated this technique with pm (10(exp -12) m) performance. We report on the version we are now developing based on space-qualifiable, fiber-coupled distributed-feedback semiconductor lasers.

  4. Synchrony of small nonlinear networks in chaotic semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Ohtsubo, Junji; Ozawa, Ryo; Nanbu, Masashi

    2015-07-01

    The dynamics and synchronization properties of coupled chaotic semiconductor laser networks are numerically studied. As network nodes, we consider a small number of nonlinear elements of semiconductor lasers. In relation to the networks in coupled synaptic neurons, the synchronization properties of systems and conditions for zero-lag synchronization between semiconductor lasers are investigated. It is proved that a common driving laser in the adjacent coupled nodes plays a crucial role in zero-lag synchronization in semiconductor laser networks.

  5. Coupled parallel waveguide semiconductor laser

    NASA Technical Reports Server (NTRS)

    Katz, J.; Kapon, E.; Lindsey, C.; Rav-Noy, Z.; Margalit, S.; Yariv, A.; Mukai, S.

    1984-01-01

    The operation of a new type of tunable laser, where the two separately controlled individual lasers are placed vertically in parallel, has been demonstrated. One of the cavities ('control' cavity) is operated below threshold and assists the longitudinal mode selection and tuning of the other laser. With a minor modification, the same device can operate as an independent two-wavelength laser source.

  6. Optical communication with semiconductor laser diodes

    NASA Technical Reports Server (NTRS)

    Davidson, F.

    1987-01-01

    A 25 megabit/sec direct detection optical communication system that used Q=4 PPM signalling was constructed and its performance measured under laboratory conditions. The system used a single-mode AlGaAs laser diode transmitter and low noise silicon avalanche photodiode (APD) photodetector. Comparison of measured performance with the theoretical revealed that modeling the APD output as a Gaussian process under conditions of negligible background radiation and low (less than 10 to the -12 power A) APD bulk leakage currents leads to substantial underestimates of optimal APD gain to use and overestimates of system bit error probability. A procedure is given to numerically compute system performance which uses the more accurate Webb's Approximation of the exact Conradi distribution for the APD ouput signal that does not require excessive amounts of computer time (a few minutes of VAX 8600 CPU time per system operating point). Examples are given which illustrate the breakdown of the Gaussian approximation in assessing system performance. This system achieved a bit error probability of 10 to the -6 power at a received signal energy corresponding to an average of 60 absorbed photons/bit and optimal APD gain of 700.

  7. Optical communication with semiconductor laser diodes

    NASA Technical Reports Server (NTRS)

    Davidson, F.

    1988-01-01

    Slot timing recovery in a direct detection optical PPM communication system can be achieved by processing the photodetector waveform with a nonlinear device whose output forms the input to a phase lock group. The choice of a simple transition detector as the nonlinearity is shown to give satisfactory synchronization performance. The rms phase error of the recovered slot clock and the effect of slot timing jitter on the bit error probability were directly measured. The experimental system consisted of an AlGaAs laser diode (lambda = 834 nm) and a silicon avalanche photodiode (APD) photodetector and used Q=4 PPM signaling operated at a source data rate of 25 megabits/second. The mathematical model developed to characterize system performance is shown to be in good agreement with actual performance measurements. The use of the recovered slot clock in the receiver resulted in no degradation in receiver sensitivity compared to a system with perfect slot timing. The system achieved a bit error probability of 10 to the minus 6 power at received signal energies corresponding to an average of less than 60 detected photons per information bit.

  8. Theory, Modeling, and Simulation of Semiconductor Lasers

    NASA Technical Reports Server (NTRS)

    Ning, Cun-Zheng; Saini, Subbash (Technical Monitor)

    1998-01-01

    Semiconductor lasers play very important roles in many areas of information technology. In this talk, I will first give an overview of semiconductor laser theory. This will be followed by a description of different models and their shortcomings in modeling and simulation. Our recent efforts in constructing a fully space and time resolved simulation model will then be described. Simulation results based on our model will be presented. Finally the effort towards a self-consistent and comprehensive simulation capability for the opto-electronics integrated circuits (OEICs) will be briefly reviewed.

  9. Teradiode's high brightness semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Huang, Robin K.; Chann, Bien; Burgess, James; Lochman, Bryan; Zhou, Wang; Cruz, Mike; Cook, Rob; Dugmore, Dan; Shattuck, Jeff; Tayebati, Parviz

    2016-03-01

    TeraDiode is manufacturing multi-kW-class ultra-high brightness fiber-coupled direct diode lasers for industrial applications. A fiber-coupled direct diode laser with a power level of 4,680 W from a 100 μm core diameter, <0.08 numerical aperture (NA) output fiber at a single center wavelength was demonstrated. Our TeraBlade industrial platform achieves world-record brightness levels for direct diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 3.5 mm-mrad and is the lowest BPP multi-kW-class direct diode laser yet reported. This laser is suitable for industrial materials processing applications, including sheet metal cutting and welding. This 4-kW fiber-coupled direct diode laser has comparable brightness to that of industrial fiber lasers and CO2 lasers, and is over 10x brighter than state-of-the-art direct diode lasers. We have also demonstrated novel high peak power lasers and high brightness Mid-Infrared Lasers.

  10. Semiconductor Laser With Multilayer Dielectric Reflector

    NASA Technical Reports Server (NTRS)

    Lang, Robert J.

    1991-01-01

    Multilayer dielectric reflector included in proposed surface-emitting, distributed-feedback, grating semiconductor laser (e.g., a GaAlAs device). Contributes to efficiency and output power of laser by reducing amount of light entering substrate, where wasted by absorption. Index of refraction in reflector sublayers alternates between higher and lower value. Higher value less than effective index of refraction of waveguide layer.

  11. Direct detection optical intersatellite link at 220 Mbps using AlGaAs laser diode and silicon APD with 4-ary PPM signaling

    NASA Technical Reports Server (NTRS)

    Sun, Xiaoli; Davidson, Frederic M.

    1990-01-01

    A newly developed 220 Mbps free-space 4-ary pulse position modulation (PPM) direct detection optical communication system is described. High speed GaAs integrated circuits were used to construct the PPM encoder and receiver electronic circuits. Both PPM slot and word timing recovery were provided in the PPM receiver. The optical transmitter consisted of an AlGaAs laser diode (Mitsubishi ML5702A, lambda=821nm) and a high speed driver unit. The photodetector consisted of a silicon avalanche photodiode (APD) (RCA30902S) preceded by an optical interference filter (delta lambda=10nm). Preliminary tests showed that the self-synchronized PPM receiver could achieve a receiver bit error rate of less than 10(exp -6) at 25 nW average received optical signal power or 360 photons per transmitted information bit. The relatively poor receiver sensitivity was believed to be caused by the insufficient electronic bandwidth of the APD preamplifier and the poor linearity of the preamplifier high frequency response.

  12. Ultralow noise miniature external cavity semiconductor laser

    PubMed Central

    Liang, W.; Ilchenko, V. S.; Eliyahu, D.; Savchenkov, A. A.; Matsko, A. B.; Seidel, D.; Maleki, L.

    2015-01-01

    Advanced applications in optical metrology demand improved lasers with high spectral purity, in form factors that are small and insensitive to environmental perturbations. While laboratory-scale lasers with extraordinarily high stability and low noise have been reported, all-integrated chip-scale devices with sub-100 Hz linewidth have not been previously demonstrated. Lasers integrated with optical microresonators as external cavities have the potential for substantial reduction of noise. However, stability and spectral purity improvements of these lasers have only been validated with rack-mounted support equipment, assembled with fibre lasers to marginally improve their noise performance. In this work we report on a realization of a heterogeneously integrated, chip-scale semiconductor laser featuring 30-Hz integral linewidth as well as sub-Hz instantaneous linewidth. PMID:26104321

  13. Ultralow noise miniature external cavity semiconductor laser.

    PubMed

    Liang, W; Ilchenko, V S; Eliyahu, D; Savchenkov, A A; Matsko, A B; Seidel, D; Maleki, L

    2015-01-01

    Advanced applications in optical metrology demand improved lasers with high spectral purity, in form factors that are small and insensitive to environmental perturbations. While laboratory-scale lasers with extraordinarily high stability and low noise have been reported, all-integrated chip-scale devices with sub-100 Hz linewidth have not been previously demonstrated. Lasers integrated with optical microresonators as external cavities have the potential for substantial reduction of noise. However, stability and spectral purity improvements of these lasers have only been validated with rack-mounted support equipment, assembled with fibre lasers to marginally improve their noise performance. In this work we report on a realization of a heterogeneously integrated, chip-scale semiconductor laser featuring 30-Hz integral linewidth as well as sub-Hz instantaneous linewidth. PMID:26104321

  14. Ultralow noise miniature external cavity semiconductor laser

    NASA Astrophysics Data System (ADS)

    Liang, W.; Ilchenko, V. S.; Eliyahu, D.; Savchenkov, A. A.; Matsko, A. B.; Seidel, D.; Maleki, L.

    2015-06-01

    Advanced applications in optical metrology demand improved lasers with high spectral purity, in form factors that are small and insensitive to environmental perturbations. While laboratory-scale lasers with extraordinarily high stability and low noise have been reported, all-integrated chip-scale devices with sub-100 Hz linewidth have not been previously demonstrated. Lasers integrated with optical microresonators as external cavities have the potential for substantial reduction of noise. However, stability and spectral purity improvements of these lasers have only been validated with rack-mounted support equipment, assembled with fibre lasers to marginally improve their noise performance. In this work we report on a realization of a heterogeneously integrated, chip-scale semiconductor laser featuring 30-Hz integral linewidth as well as sub-Hz instantaneous linewidth.

  15. Method and system for powering and cooling semiconductor lasers

    SciTech Connect

    Telford, Steven J; Ladran, Anthony S

    2014-02-25

    A semiconductor laser system includes a diode laser tile. The diode laser tile includes a mounting fixture having a first side and a second side opposing the first side and an array of semiconductor laser pumps coupled to the first side of the mounting fixture. The semiconductor laser system also includes an electrical pulse generator thermally coupled to the diode bar and a cooling member thermally coupled to the diode bar and the electrical pulse generator.

  16. Semiconductor laser applications in rheumatology

    NASA Astrophysics Data System (ADS)

    Pascu, Mihail-Lucian; Suteanu, S.

    1996-01-01

    Two types of laser diode (LD) based equipment for rheumatology are introduced. The first is a portable device which contains single LD emitting at 890 nm laser pulses (time full width 100 nsec) of reprate tunable within (0.5 - 1.5) kHz; the laser beam average power is 0.7 mW at 1 kHz reprate. The second is computer controlled, contains one HeNe laser and 5 LD allowing 6 modes of patient irradiation (placebo effect evaluation included). HeNe laser works in cw at 632.8 nm; the LD works each as described for the portable equipment. HeNe and LD beams are superposed so that HeNe laser spot in the irradiation plane has a 60 mm diameter and the LD spots covers a 50 mm diameter disc centered on the HeNe laser spot. Clinical applications using the second type of equipment are reported; 1287 patients were treated between October 1991 and October 1994. Female/male ratio was 4:1 and their age distribution was between 18 and 85 years. The average number of exposures was 10 and the mean exposure time was 7 minutes. Studies were made on the treatment of rheumatoid arthritis, seronegative arthritis, degenerative joint diseases, abarticular rheumatism, osteoporosis pain and pains and edema after fractures.

  17. External control of semiconductor nanostructure lasers

    NASA Astrophysics Data System (ADS)

    Naderi, Nader A.

    2011-12-01

    Novel semiconductor nanostructure laser diodes such as quantum-dot and quantum-dash are key optoelectronic candidates for many applications such as data transmitters in ultra fast optical communications. This is mainly due to their unique carrier dynamics compared to conventional quantum-well lasers that enables their potential for high differential gain and modified linewidth enhancement factor. However, there are known intrinsic limitations associated with semiconductor laser dynamics that can hinder the performance including the mode stability, spectral linewidth, and direct modulation capabilities. One possible method to overcome these limitations is through the use of external control techniques. The electrical and/or optical external perturbations can be implemented to improve the parameters associated with the intrinsic laser's dynamics, such as threshold gain, damping rate, spectral linewidth, and mode selectivity. In this dissertation, studies on the impact of external control techniques through optical injection-locking, optical feedback and asymmetric current bias control on the overall performance of the nanostructure lasers were conducted in order to understand the associated intrinsic device limitations and to develop strategies for controlling the underlying dynamics to improve laser performance. In turn, the findings of this work can act as a guideline for making high performance nanostructure lasers for future ultra fast data transmitters in long-haul optical communication systems, and some can provide an insight into making a compact and low-cost terahertz optical source for future implementation in monolithic millimeter-wave integrated circuits.

  18. Alexandrite laser pumped by semiconductor lasers

    SciTech Connect

    Scheps, R.; Gately, B.M.; Myers, J.F. ); Krasinski, J.S. ); Heller, D.F. )

    1990-06-04

    We report the first operation of a direct diode-pumped tunable chromium-doped solid-state laser. A small alexandrite (Cr:BeAl{sub 2}O{sub 4}) crystal was longitudinally pumped by two visible laser diodes. The threshold pump power was 12 mW using the {ital R}{sub 1} line at 680.4 nm for the pump transition, and the slope efficiency was 25%. The measured laser output bandwidth was 2.1 nm.

  19. Ultrafast Modulation of Semiconductor Lasers Through a Terahertz Field

    NASA Technical Reports Server (NTRS)

    Ning, Cun-Zheng; Hughes, Steven; Citrin, David

    1998-01-01

    We demonstrate, by means of numerical simulation, a new mechanism to modulate and switch semiconductor lasers at THz and sub-THz frequency rates. A sinusoidal terahertz field applied to a semiconductor laser heats the electron-hole plasma and consequently modifies the optical susceptibility. This allows an almost linear modulation of the output power of tile semiconductor laser and leads to a faithful reproduction of the terahertz-field waveform in the emitted laser intensity.

  20. Semiconductor lasers in rheumatological treatment

    NASA Astrophysics Data System (ADS)

    Pascu, Mihail-Lucian; Suteanu, S.; Ignat, P.; Pruna, Simion; Chitu, A.

    1995-03-01

    A computer controlled equipment, containing 6 lasers (HeNe and 5 diode lasers--DL) conceived to be used in rheumatological treatment is reported. DL emit at 895 nm and for typical applications, their expanded spots are superposed within the irradiation plane, on the HeNE defocused spot used to define the surface to be irradiated. DL emit 100 nsec pulses between 0.5 KHz and 1.5 KHz repetition rate and 0.5 mW average power (measured at 1 KHz). 150 patients with rheumathologic diseases were treated: lumbar spondylosis (75), gonarthrosis (30), cervical spondylosis (21), coxarthrosis (15), Heberden and Bouchard (9). The treatment consisted of: group I, 50 patients--laser therapy, 10 min/day, 10 days; group II, 50 patients--classical antirheumatic treatment; group III, 50 patients--mixed treatment. Assessment of sympathetic skin activity made using reactometry measurements, shows that latency time was longer before irradiation, 1867 +/- 289) msec then after, (1234 +/- 321) msec. Pain rating indexes decreasing for all three groups of patients were measured. Better results for more superficial diseases were obtained and best results were observed after irradiation with 1 KHz - 1.5 KHz repetition rate IR pulses. Better results were obtained when spot irradiation in a few points combined with zone irradiations was used.

  1. Optical communication with semiconductor laser diode

    NASA Technical Reports Server (NTRS)

    Davidson, Frederic; Sun, X.

    1989-01-01

    This interim report describes the progress in the construction of a 220 Mbps Q=4 PPM optical communication system that uses a semiconductor laser as the optical transmitter and an avalanche photodiode (APD) as the photodetector. The transmitter electronics have been completed and contain both GaAs and ECL III IC's. The circuit was able to operate at a source binary data rate from 75 Mbps to 290 Mbps with pulse rise and fall times of 400 ps. The pulse shapes of the laser diode and the response from the APD/preamplifier module were also measured.

  2. Resonant activation in bistable semiconductor lasers

    SciTech Connect

    Lepri, Stefano; Giacomelli, Giovanni

    2007-08-15

    We theoretically investigate the possibility of observing resonant activation in the hopping dynamics of two-mode semiconductor lasers. We present a series of simulations of a rate-equation model under random and periodic modulation of the bias current. In both cases, for an optimal choice of the modulation time scale, the hopping times between the stable lasing modes attain a minimum. The simulation data are understood by means of an effective one-dimensional Langevin equation with multiplicative fluctuations. Our conclusions apply to both edge-emitting and vertical cavity lasers, thus opening the way to several experimental tests in such optical systems.

  3. Squeezing in an injection-locked semiconductor laser

    NASA Astrophysics Data System (ADS)

    Inoue, S.; Machida, S.; Yamamoto, Y.; Ohzu, H.

    1993-09-01

    The intensity-noise properties of an injection-locked semiconductor laser were studied experimentally. The constant-current-driven semiconductor laser producing the amplitude-squeezed state whose intensity noise was reduced below the standard quantum limit (SQL) by 0.72 dB was injection-locked by an external master laser. The measured intensity-noise level of the injection-locked semiconductor laser was 0.91 dB below the SQL. This experimental result indicates that a phase-coherent amplitude-squeezed state or squeezed vacuum state together with a reference local oscillator wave can be generated directly by semiconductor laser systems.

  4. EDITORIAL: Semiconductor lasers: the first fifty years Semiconductor lasers: the first fifty years

    NASA Astrophysics Data System (ADS)

    Calvez, S.; Adams, M. J.

    2012-09-01

    Anniversaries call for celebrations. Since it is now fifty years since the first semiconductor lasers were reported, it is highly appropriate to celebrate this anniversary with a Special Issue dedicated to the topic. The semiconductor laser now has a major effect on our daily lives since it has been a key enabler in the development of optical fibre communications (and hence the internet and e-mail), optical storage (CDs, DVDs, etc) and barcode scanners. In the early 1960s it was impossible for most people (with the exception of very few visionaries) to foresee any of these future developments, and the first applications identified were for military purposes (range-finders, target markers, etc). Of course, many of the subsequent laser applications were made possible by developments in semiconductor materials, in the associated growth and fabrication technology, and in the increased understanding of the underlying fundamental physics. These developments continue today, so that the subject of semiconductor lasers, although mature, is in good health and continues to grow. Hence, we can be confident that the pervasive influence of semiconductor lasers will continue to develop as optoelectronics technology makes further advances into other sectors such as healthcare, security and a whole host of applications based on the global imperatives to reduce energy consumption, minimise environmental impact and conserve resources. The papers in this Special Issue are intended to tell some of the story of the last fifty years of laser development as well as to provide evidence of the current state of semiconductor laser research. Hence, there are a number of papers where the early developments are recalled by authors who played prominent parts in the story, followed by a selection of papers from authors who are active in today's exciting research. The twenty-fifth anniversary of the semiconductor laser was celebrated by the publication of a number of papers dealing with the early

  5. Single mode wavelength control of modulated AlGaAs lasers with external and internal etalon feedback

    NASA Technical Reports Server (NTRS)

    Maynard, William L.

    1989-01-01

    Single mode lasing without mode hops has been obtained for VSIS and CSP laser diodes with an external etalon attached to the laser's front facet for up to an 8 C range CW and a 4 C range pulsed, with .07 nm/C tuning. Tests of thin tapered-thickness (TTT) laser diodes show CW and pulsed single mode lasing over 10 C and 2 C ranges, respectively, with .08 nm/C tuning. An analysis of the TTT structure reveals the equivalent of an internal etalon. The time-resolved pulsed behavior for both types of lasers show single mode lasing within the proper temperature ranges with minor modes present only early in the optical pulse, if at all. The external etalon produces noticeable interference fringes in the farfield pattern, while those of the TTT lasers are smooth. Ongoing CW lifetest results indicate stability to within one longitudinal mode after a few hundred hours of operation, along with at least several thousand hours lifetime.

  6. Guiding effect of quantum wells in semiconductor lasers

    SciTech Connect

    Aleshkin, V Ya; Dikareva, Natalia V; Dubinov, A A; Zvonkov, B N; Karzanova, Maria V; Kudryavtsev, K E; Nekorkin, S M; Yablonskii, A N

    2013-05-31

    The guiding effect of InGaAs quantum wells in GaAs- and InP-based semiconductor lasers has been studied theoretically and experimentally. The results demonstrate that such waveguides can be effectively used in laser structures with a large refractive index difference between the quantum well material and semiconductor matrix and a large number of quantum wells (e.g. in InP-based structures). (semiconductor lasers. physics and technology)

  7. Approaches toward a blue semiconductor laser

    NASA Technical Reports Server (NTRS)

    Ladany, I.

    1989-01-01

    Possible approaches for obtaining semiconductor diode laser action in the blue region of the spectrum are surveyed. A discussion of diode lasers is included along with a review of the current status of visible emitters, presently limited to 670 nm. Methods are discussed for shifting laser emission toward shorter wavelengths, including the use of II-IV materials, the increase in the bandgap of III-V materials by addition of nitrogen, and changing the bandstructure from indirect to direct by incorporating interstitial atoms or by constructing superlattices. Non-pn-junction injection methods are surveyed, including avalanche breakdown, Langmuir-Blodgett diodes, heterostructures, carrier accumulation, and Berglund diodes. Prospects of inventing new multinary semiconducting materials are discussed, and a number of novel materials described in the literature are tabulated. New approaches available through the development of quantum wells and superlattices are described, including resonant tunneling and the synthesis of arbitrary bandgap materials through multiple quantum wells.

  8. Pseudorelativistic laser-semiconductor quantum plasma interactions

    NASA Astrophysics Data System (ADS)

    Wang, Yunliang; Eliasson, Bengt

    2016-04-01

    A model is presented for the nonlinear interaction between a large-amplitude laser and semiconductor plasma in the semirelativistic quantum regime. The collective behavior of the electrons in the conduction band of a narrow-gap semiconductor is modeled by a Klein-Gordon equation, which is nonlinearly coupled with the electromagnetic (EM) wave through the Maxwell equations. The parametric instabilities involving the stimulated Raman scattering and modulational instabilities are analyzed theoretically and the resulting dispersion relation relation is solved numerically to assess the quantum effects on the instability. The study of the quasi-steady-state solution of the system and direct numerical simulations demonstrate the possibility of the formation of localized EM solitary structures trapped in electrons density holes.

  9. Self-collimated unstable resonator semiconductor laser

    NASA Technical Reports Server (NTRS)

    Lang, Robert J. (Inventor)

    1993-01-01

    Self-collimation of the output is achieved in an unstable resonator semiconductor laser by providing a large concave mirror M sub 1 and a small convex mirror M sub 2 on opposite surfaces of a semiconductor body of a material having an effective index of refraction denoted by n, where the respective mirror radii R sub 1, R sub 2 and beam radii r sub 1, r sub 2 are chosen to satisfy a condition (R sub 2)/(1 + r sub 1) = (n - 1)/n, with a value of geometric magnification 1 less than or equal to M less than or equal to (n + 1)/(n - 1) where r sub 1 and r sub 2 are the radii of counterpropagating beams at respective mirrors of radii R sub 1 and R sub 2.

  10. Cost-effective telecom/datacom semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Chen, Nong; Chen, Dick T. R.; Hsin, Wei; Chen, Steven Bo; Xiong, Frank; Erlig, Hernan; Chen, Paul; Yeh, Xian-li; Scott, David C.; Sherer, Axel

    2007-11-01

    The recent development of semiconductor laser technologies for cost-effective telecom/datacom applications is reviewed in details in this paper. This includes the laser design, laser chip technology, laser packaging technology and other low cost lasers (chip + packaging). Some design and simulation examples in Archcom laser production are described first. A latest trend in the wafer scale testing/characterization/screening technology for low cost semiconductor laser mass production is discussed then. An advanced long wavelength high power single mode surface emitting laser with wafer scale characterization using our unique mask free focused ion beam (FIB) etching technology is also demonstrated. Detailed descriptions on our wide temperature range (-50 °C to +105 °C) G-PON distributed feedback (DFB) semiconductor lasers with high performance and low cost wafer design are included. Cost reduction innovations in laser package with our beam profile improved laser and optical feedback insensitive (OFBI) laser are also addressed.

  11. Graded doping low internal loss 1060-nm InGaAs/AlGaAs quantum well semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Tan, Shao-Yang; Zhai, Teng; Zhang, Rui-Kang; Lu, Dan; Wang, Wei; Ji, Chen

    2015-06-01

    Internal loss is a key internal parameter for high power 1060-nm InGaAs/AlGaAs semiconductor laser. In this paper, we discuss the origin of internal loss of 1060-nm InGaAs/GaAs quantum well (QW) AlGaAs separate confinement heterostructure semiconductor laser, and the method to reduce internal loss. By light doping the n-cladding layer, and stepwise doping the p-cladding layer combined with the expanded waveguide layer, a broad area laser with internal loss of 1/cm is designed and fabricated. Ridge waveguide laser with an output power of 350 mW is obtained. The threshold current and slope efficiency near the threshold current are 20 mA and 0.8 W/A, respectively. Project supported by the National Natural Science Foundation of China (Grant Nos. 61274046, 61335009, 61201103, and 61320106013) and the National High Technology Research and Development Program of China (Grant No. 2013AA014202).

  12. A hybrid semiconductor-glass waveguide laser

    NASA Astrophysics Data System (ADS)

    Fan, Youwen; Oldenbeuving, Ruud M.; Klein, Edwin J.; Lee, Chris J.; Song, Hong; Khan, Muhammed R. H.; Offerhaus, Herman L.; van der Slot, Peter J. M.; Boller, Klaus-J.

    2014-05-01

    We report on a novel type of laser in which a semiconductor optical amplifier (SOA) receives frequency-selective feedback from a glass-waveguide circuit. The laser we present here is based on InP for operation in the 1.55 μm wavelength range. The Si3N4/SiO2 glass waveguide circuit comprises two sequential high-Q ring resonators. Adiabatic tapering is used for maximizing the feedback. The laser shows single-frequency oscillation with a record-narrow spectral linewidth of 24 kHz at an output power of 5.7 mW. The hybrid laser can be tuned over a broad range of 46.8 nm (1531 nm to 1577.8 nm). Such InP-glass hybrid lasers can be of great interest in dense wavelength division multiplexing (DWDM) and as phase reference in optical beam-forming networks (OBFN). The type of laser demonstrated here is also of general importance because it may be applied over a huge wavelength range including the visible, limited only by the transparency of glass (400 nm to 2.35 μm).

  13. Semiconductor Lasers Containing Quantum Wells in Junctions

    NASA Technical Reports Server (NTRS)

    Yang, Rui Q.; Qiu, Yueming

    2004-01-01

    In a recent improvement upon In(x)Ga(1-x)As/InP semiconductor lasers of the bipolar cascade type, quantum wells are added to Esaki tunnel junctions, which are standard parts of such lasers. The energy depths and the geometric locations and thicknesses of the wells are tailored to exploit quantum tunneling such that, as described below, electrical resistances of junctions and concentrations of dopants can be reduced while laser performances can be improved. In(x)Ga(1-x)As/InP bipolar cascade lasers have been investigated as sources of near-infrared radiation (specifically, at wavelengths of about 980 and 1,550 nm) for photonic communication systems. The Esaki tunnel junctions in these lasers have been used to connect adjacent cascade stages and to enable transport of charge carriers between them. Typically, large concentrations of both n (electron-donor) and p (electron-acceptor) dopants have been necessary to impart low electrical resistances to Esaki tunnel junctions. Unfortunately, high doping contributes free-carrier absorption, thereby contributing to optical loss and thereby, further, degrading laser performance. In accordance with the present innovation, quantum wells are incorporated into the Esaki tunnel junctions so that the effective heights of barriers to quantum tunneling are reduced (see figure).

  14. Topics in Laser Spectroscopy: A semiconductor diode laser spectrometer for laser spectrochemistry

    NASA Astrophysics Data System (ADS)

    Lawrenz, J.; Niemax, K.

    The construction and the use of a single mode semiconductor diode laser spectrometer which can be tuned electronically controlled by temperature as well as by current is presented. The spectroscopic properties of this spectrometer including commercial semiconductor diode lasers of the AlGaAs/GaAs type operating in the wavelength range 735-860 nm are discussed. Examples of the application of diode laser spectrometers in laser spectrochemistry are given.

  15. High power semiconductor disk laser with a semiconductor-dielectric-metal compound mirror

    NASA Astrophysics Data System (ADS)

    Rantamäki, A.; Saarinen, E. J.; Lyytikäinen, J.; Lahtonen, K.; Valden, M.; Okhotnikov, O. G.

    2014-03-01

    We present optically pumped semiconductor disk lasers with a thin dielectric layer placed between the semiconductor distributed Bragg reflector and the metallization interface. The approach is shown to enhance the reflectivity of the semiconductor mirror while introducing a negligible penalty to the thermal resistance of the device. The design has potential for improving the performance of semiconductor disk lasers by avoiding highly pump-absorbing metal layers and allowing thinner mirror structures. The advantages are expected to be especially prominent for material systems that employ thick thermally insulating semiconductor mirrors.

  16. Mid-IR semiconductor lasers for chemical sensing

    NASA Technical Reports Server (NTRS)

    Hill, C. J.; Yang, R. Q.

    2003-01-01

    The development of mid-IR semiconductor diode lasers based on type-II interband cascade structures is presented. How these diode lasers can be developed to meet the requirements in chemical sensing applications is discussed.

  17. Self-mode-locking semiconductor disk laser.

    PubMed

    Gaafar, Mahmoud; Richter, Philipp; Keskin, Hakan; Möller, Christoph; Wichmann, Matthias; Stolz, Wolfgang; Rahimi-Iman, Arash; Koch, Martin

    2014-11-17

    The development of mode-locked semiconductor disk lasers received striking attention in the last 14 years and there is still a vast potential of such pulsed lasers to be explored and exploited. While for more than one decade pulsed operation was strongly linked to the employment of a saturable absorber, self-mode-locking emerged recently as an effective and novel technique in this field - giving prospect to a reduced complexity and improved cost-efficiency of such lasers. In this work, we highlight recent achievements regarding self-mode-locked semiconductor devices. It is worth to note, that although nonlinear effects in the active medium are expected to give rise to self-mode-locking, this has to be investigated with care in future experiments. However, there is a controversy whether results presented with respect to self-mode-locking truly show mode-locking. Such concerns are addressed in this work and we provide a clear evidence of mode-locking in a saturable-absorber-free device. By using a BBO crystal outside the cavity, green light originating from second-harmonic generation using the out-coupled laser beam is demonstrated. In addition, long-time-span pulse trains as well as radiofrequency-spectra measurements are presented for our sub-ps pulses at 500 MHz repetition rate which indicate the stable pulse operation of our device. Furthermore, a long-time-span autocorrelation trace is introduced which clearly shows absence of a pedestal or double pulses. Eventually, a beam-profile measurement reveals the excellent beam quality of our device with an M-square factor of less than 1.1 for both axes, showing that self-mode-locking can be achieved for the fundamental transverse mode. PMID:25402081

  18. Highly coherent modeless broadband semiconductor laser.

    PubMed

    Sellahi, M; Myara, M; Beaudoin, G; Sagnes, I; Garnache, A

    2015-09-15

    We report on the highly coherent modeless broadband continuous wave operation of a semiconductor vertical-external-cavity-surface-emitting laser. The laser design is based on a frequency-shifted-feedback scheme provided by an acousto-optic frequency shifter inserted in a linear or a ring traveling wave cavity. The gain mirror is a GaAs-based multiple quantum well structure providing large gain at 1.07 μm. This laser exhibits a coherent optical spectrum over 1.27 nm (330 GHz) bandwidth, with 70 mW output power and a high beam quality. The light polarization is linear (>30  dB extinction ratio). The laser dynamics exhibits a low intensity noise close to class A regime, with a ∼1.5  MHz cutoff frequency. The frequency noise spectral density shows a first-order low-pass like shape (130 kHz cutoff) leading to a Gaussian shape for homodyne interferometric signals. The measured beat width is ≃54  kHz and the coherence time of ∼19  μs. No nonlinear effects are observed, showing dynamics very close to theory. PMID:26371921

  19. Phase-Locked Semiconductor Lasers With Separate Contacts

    NASA Technical Reports Server (NTRS)

    Katz, Joseph; Yariv, Amnon; Margalit, Shlomo

    1988-01-01

    Individual current feeds enable better uniformity and flexible control. Separate contacts for lasers in array enable control of output radiation pattern and compensation of manufacturing nonuniformities among lasers. Concept of separate current control described for two-laser array in "Semiconductor Laser Phased Array" (NPO-15963).

  20. Two-mode dynamics in different semiconductor laser structures

    NASA Astrophysics Data System (ADS)

    Scirè, Alessandro; Sorel, Marc; Colet, Pere; Tessone, Claudio Juan; Mirasso, Claudio R.; San Miguel, Maxi

    2006-04-01

    We review three two-mode models for different semiconductor laser structures: Vertical-Cavity Surface-Emitting Lasers (VCSELs), Twin-Stripe Semiconductor-Lasers (TSSL), and Semiconductor Ring Lasers (SRL). The VCSELs model and TSSL model display rich dynamic behavior when a saturable absorber is embedded in the cavity. VCSELs with saturable absorber showed polarization chaos, which found applications in encoded communications; TSSLs with saturable absorber show coherent locked states as well as chaotic behavior; and SRLs show a complex two-mode dynamics giving rise to bidirectional operation, alternate oscillations and spontaneous symmetry breaking toward quasi-unidirectional bistable solutions, with potential applications to all-optical switching.

  1. Semiconductor Laser Diode Pumps for Inertial Fusion Energy Lasers

    SciTech Connect

    Deri, R J

    2011-01-03

    Solid-state lasers have been demonstrated as attractive drivers for inertial confinement fusion on the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) and at the Omega Facility at the Laboratory for Laser Energetics (LLE) in Rochester, NY. For power plant applications, these lasers must be pumped by semiconductor diode lasers to achieve the required laser system efficiency, repetition rate, and lifetime. Inertial fusion energy (IFE) power plants will require approximately 40-to-80 GW of peak pump power, and must operate efficiently and with high system availability for decades. These considerations lead to requirements on the efficiency, price, and production capacity of the semiconductor pump sources. This document provides a brief summary of these requirements, and how they can be met by a natural evolution of the current semiconductor laser industry. The detailed technical requirements described in this document flow down from a laser ampl9ifier design described elsewhere. In brief, laser amplifiers comprising multiple Nd:glass gain slabs are face-pumped by two planar diode arrays, each delivering 30 to 40 MW of peak power at 872 nm during a {approx} 200 {micro}s quasi-CW (QCW) pulse with a repetition rate in the range of 10 to 20 Hz. The baseline design of the diode array employs a 2D mosaic of submodules to facilitate manufacturing. As a baseline, they envision that each submodule is an array of vertically stacked, 1 cm wide, edge-emitting diode bars, an industry standard form factor. These stacks are mounted on a common backplane providing cooling and current drive. Stacks are conductively cooled to the backplane, to minimize both diode package cost and the number of fluid interconnects for improved reliability. While the baseline assessment in this document is based on edge-emitting devices, the amplifier design does not preclude future use of surface emitting diodes, which may offer appreciable future cost reductions and

  2. Laser micromachining of semiconductors for photonics applications

    NASA Astrophysics Data System (ADS)

    Nantel, Marc; Yashkir, Yuri; Lee, Seong K.; Mugford, Chas; Hockley, Bernard S.

    2001-10-01

    For decades, precisely machining silicon has been critical for the success of the semiconductor industry. This has traditionally been done through wet chemical etching, but in the pursuit of integrating photonics devices on a single chip, other techniques are worth exploring. This quest opens up interest in finding a non-wet, non-contact, arbitrary-shape milling technique for silicon. In this paper, we present our latest work in the laser micromachining of silicon. A kilohertz-repetition-rate diode-pumped Nd:YLF laser (in infrared, green or ultraviolet modes) is focused on the surface of silicon wafers in a chlorine atmosphere for an enhanced magnitude and control of the etching rate. In the chlorine atmosphere, much less debris is deposited on the surface around the cut, sub-damage threshold machining is achieved for a better control of the etching depth, and etching rates ranging from 20-300,000 micron-cube/s have been measured. In particular, the use of an infrared laser beam is singled out, along with the advantages that it holds. Results of simulations highlight the particular characteristics of the various wavelength chosen for the machining.

  3. Power scaling of semiconductor laser pumped Praseodymium-lasers

    NASA Astrophysics Data System (ADS)

    Richter, A.; Heumann, E.; Huber, G.; Ostroumov, V.; Seelert, W.

    2007-04-01

    We report on efficient lasing of Pr-doped fluoride materials with cw output powers up to 600 mW in the visible spectral range. Praseodymium doped LiYF4 and LiLuF4 crystals were pumped either by an intracavity frequency doubled optically pumped semiconductor laser with output powers up to 1.6 W and nearly diffraction limited beam quality or by a multimode GaN-laser diode with an output power of about 370 mW. Furthermore, intracavity frequency doubling of the red Pr-laser radiation to 320 nm reaching output powers of more than 360 mW with a conversion efficiency of 61% and an optical-to-optical efficiency of 22% are presented.

  4. Photon number squeezed states in semiconductor lasers

    NASA Technical Reports Server (NTRS)

    Yamamoto, Yoshihisa; Machida, Susumu; Richardson, Wayne H.

    1992-01-01

    Electromagnetic fields, with the noise on one quadrature component reduced to below the quantum mechanical zero-point fluctuation level and the noise on the other quadrature component enhanced to above it, are currently of great interest in quantum optics because of their potential applications to various precision measurements. Such squeezed states of light are usually produced by imposing nonlinear unitary evolution on coherent (or vacuum) states. On the other hand, squeezed states with reduced photon number noise and enhanced phase noise are generated directly by a constant current-driven semiconductor laser. This is the simplest scheme for the generation of nonclassical light, and so far it has yielded the largest quantum noise reduction. The mutual coupling between a lasing junction and an external electrical circuit provides opportunities for exploring the macroscopic and microscopic quantum effects in open systems.

  5. Evaluation and testing of semiconductor laser reliability in optic system

    NASA Astrophysics Data System (ADS)

    Tang, Wenyan; Fan, Xianguang; Sun, Heyi

    2007-01-01

    In order to improve the performance of an optic system, a new evaluation and testing methodology for the light source which uses semiconductor laser is presented. A new system, combining high accuracy source and measure capabilities for pulsed testing, is developed to achieve the aim of automatic measurement of Light-Current-Power (LIV) for semiconductor laser. The test can provide customer with L-I, V-I curves and other correlative parameters, such as the threshold current and slope efficiency, and so on. Meanwhile, the change of environment temperature versus lasing wavelength under pulse injection is discussed, and the relationship between the lasing wavelength and the width and cycle of injection pulse is obtained. The temperature character of packaged laser unit is measured conveniently. Making use of the above examined curves and parameters, the reliability of semiconductor laser and quality of device can be compared directly and evaluated accurately. The technique is successfully applied for the evaluation of semiconductor laser reliability.

  6. Far-UV solid state lasers for semiconductor processing

    NASA Astrophysics Data System (ADS)

    Jacob, James; Armstrong, Darrell; Smith, Arlee

    2010-02-01

    The wavelength region between 190 and 200 nm is especially relevant to semiconductor manufacturing. In contrast to ArF excimer lasers, frequency up-converted solid-state lasers offer tuning, coherence and beam quality characteristics that are essential to high performance semiconductor processing. This paper reviews various methodologies for implementing pulsed non-linear optical interactions in this wavelength region given a wide range of laser operating formats and describes the utilization of these sources for the specific semiconductor applications of interference lithography and photoresist materials studies.

  7. An introduction to the development of the semiconductor laser

    NASA Astrophysics Data System (ADS)

    Dupuis, Russell D.

    1987-06-01

    The experimental and theoretical work that preceded the first demonstration of semiconductor injection lasers in 1962 is reviewed. It is noted that John von Neumann in his 1953 manuscript was the first to treat the idea of a semiconductor light amplifier in a substantially correct way. The most important event, however, was the achievement of high-efficiency electroluminescence from GaAs p-n junctions reported in 1962. Several independent studies on the concept of a semiconductor laser or maser conducted in the middle and late 1950's and early 1960's and some theoretical and experimental papers published on the subject of injection laser operation in 1962 are briefly discussed.

  8. Advances in mode-locked semiconductor disk lasers

    NASA Astrophysics Data System (ADS)

    Kornaszewski, Lukaz; Hempler, Nils; Hamilton, Craig J.; Maker, Gareth T.; Malcolm, Graeme P. A.

    2013-02-01

    NonLinear Microscopy techniques, such as Two-Photon Excited Fluorescence and Second Harmonic Generation provide advantages over conventional Confocal Laser Scanning Microscopy. A key element in a NonLinear Microscope is an ultrafast laser which produces short pulses with the high intensities needed for exciting nonlinear processes. Semiconductor Disk Lasers potentially offer an alternative to expensive Ti:Sapphire lasers. The reported 200MHz operation of a modelocked Semiconductor Disk laser is to our knowledge the lowest repetition rate as yet demonstrated.

  9. Noise analysis of injection-locked semiconductor injection lasers

    SciTech Connect

    Schunk, N.; Peterman, K.

    1986-05-01

    The noise of injection-locked semiconductor lasers is analyzed by rate equations including the spontaneous emission noise. The side mode suppression and the relative intensity noise (RIN) of the locked laser (slave laser) are given for different wavelengths detuning between the master and slave laser and for different linewidth enhancement factors ..cap alpha... For large ..cap alpha.., locking is difficult to achieve, whereas extremely low noise may be obtained for injection-locked lasers with a low linewidth enhancement factor.

  10. Optical velocimeters for moving surfaces using gas and semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Belousov, P. Ya.; Dubnistshev, Yu. N.; Meledin, V. G.

    1990-10-01

    A differential arrangement using a laser for the measurement of the velocity of moving surfaces is discussed. Configurations of optical velocimeters with diffraction beam-splitters are shown not to be critical on the wavelength stability of a semiconductor laser. Laser meters measuring the velocity and length of rolled stock have been built on the basis of the devices considered.

  11. Monolayer semiconductor nanocavity lasers with ultralow thresholds.

    PubMed

    Wu, Sanfeng; Buckley, Sonia; Schaibley, John R; Feng, Liefeng; Yan, Jiaqiang; Mandrus, David G; Hatami, Fariba; Yao, Wang; Vučković, Jelena; Majumdar, Arka; Xu, Xiaodong

    2015-04-01

    Engineering the electromagnetic environment of a nanometre-scale light emitter by use of a photonic cavity can significantly enhance its spontaneous emission rate, through cavity quantum electrodynamics in the Purcell regime. This effect can greatly reduce the lasing threshold of the emitter, providing a low-threshold laser system with small footprint, low power consumption and ultrafast modulation. An ultralow-threshold nanoscale laser has been successfully developed by embedding quantum dots into a photonic crystal cavity (PCC). However, several challenges impede the practical application of this architecture, including the random positions and compositional fluctuations of the dots, extreme difficulty in current injection, and lack of compatibility with electronic circuits. Here we report a new lasing strategy: an atomically thin crystalline semiconductor--that is, a tungsten diselenide monolayer--is non-destructively and deterministically introduced as a gain medium at the surface of a pre-fabricated PCC. A continuous-wave nanolaser operating in the visible regime is thereby achieved with an optical pumping threshold as low as 27 nanowatts at 130 kelvin, similar to the value achieved in quantum-dot PCC lasers. The key to the lasing action lies in the monolayer nature of the gain medium, which confines direct-gap excitons to within one nanometre of the PCC surface. The surface-gain geometry gives unprecedented accessibility and hence the ability to tailor gain properties via external controls such as electrostatic gating and current injection, enabling electrically pumped operation. Our scheme is scalable and compatible with integrated photonics for on-chip optical communication technologies. PMID:25778703

  12. Key techniques for space-based solar pumped semiconductor lasers

    NASA Astrophysics Data System (ADS)

    He, Yang; Xiong, Sheng-jun; Liu, Xiao-long; Han, Wei-hua

    2014-12-01

    In space, the absence of atmospheric turbulence, absorption, dispersion and aerosol factors on laser transmission. Therefore, space-based laser has important values in satellite communication, satellite attitude controlling, space debris clearing, and long distance energy transmission, etc. On the other hand, solar energy is a kind of clean and renewable resources, the average intensity of solar irradiation on the earth is 1353W/m2, and it is even higher in space. Therefore, the space-based solar pumped lasers has attracted much research in recent years, most research focuses on solar pumped solid state lasers and solar pumped fiber lasers. The two lasing principle is based on stimulated emission of the rare earth ions such as Nd, Yb, Cr. The rare earth ions absorb light only in narrow bands. This leads to inefficient absorption of the broad-band solar spectrum, and increases the system heating load, which make the system solar to laser power conversion efficiency very low. As a solar pumped semiconductor lasers could absorb all photons with energy greater than the bandgap. Thus, solar pumped semiconductor lasers could have considerably higher efficiencies than other solar pumped lasers. Besides, solar pumped semiconductor lasers has smaller volume chip, simpler structure and better heat dissipation, it can be mounted on a small satellite platform, can compose satellite array, which can greatly improve the output power of the system, and have flexible character. This paper summarizes the research progress of space-based solar pumped semiconductor lasers, analyses of the key technologies based on several application areas, including the processing of semiconductor chip, the design of small and efficient solar condenser, and the cooling system of lasers, etc. We conclude that the solar pumped vertical cavity surface-emitting semiconductor lasers will have a wide application prospects in the space.

  13. High power semiconductor laser beam combining technology and its applications

    NASA Astrophysics Data System (ADS)

    Wang, Lijun; Tong, Cunzhu; Peng, Hangyu; Zhang, Jun

    2013-05-01

    With the rapid development of laser applications, single elements of diode lasers are not able to meet the increasing requirements on power and beam quality in the material processing and defense filed, whether are used as pumping sources or directly laser sources. The coupling source with high power and high beam quality, multiplexed by many single elements, has been proven to be a promising technical solution. In this paper, the authors review the development tendency of efficiency, power, and lifetime of laser elements firstly, and then introduce the progress of laser beam combining technology. The authors also present their recent progress on the high power diode laser sources developed by beam combining technology, including the 2600W beam combining direct laser source, 1000W fiber coupled semiconductor lasers and the 1000W continuous wave (CW) semiconductor laser sources with beam quality of 12.5×14[mm. mrad]2.

  14. Femtosecond mode-locked holmium fiber laser pumped by semiconductor disk laser.

    PubMed

    Chamorovskiy, A; Marakulin, A V; Ranta, S; Tavast, M; Rautiainen, J; Leinonen, T; Kurkov, A S; Okhotnikov, O G

    2012-05-01

    We report on a 2085 nm holmium-doped silica fiber laser passively mode-locked by semiconductor saturable absorber mirror and carbon nanotube absorber. The laser, pumped by a 1.16 μm semiconductor disk laser, produces 890 femtosecond pulses with the average power of 46 mW and the repetition rate of 15.7 MHz. PMID:22555700

  15. LASER APPLICATIONS AND OTHER TOPICS IN QUANTUM ELECTRONICS: Optical velocimeter based on a semiconductor laser

    NASA Astrophysics Data System (ADS)

    Belousov, P. Ya; Dubnishchev, Yu N.; Meledin, V. G.

    1988-03-01

    It is shown that optical velocimeters using diffraction beam splitters are not critically sensitive to the stability of the emission wavelength of a semiconductor laser. A functional scheme of a semiconductor laser source with systems for stabilization of the temperature and pump current is described. The technical characteristics are given of a semiconductor-laser velocimeter for the determination of the velocity and length of rolling stock.

  16. Monolayer semiconductor nanocavity lasers with ultralow thresholds

    DOE PAGESBeta

    Wu, Sanfeng; Buckley, Sonia; Schaibley, John R.; Feng, Liefeng; Yan, Jiaqiang; Mandrus, David G.; Hatami, Fariba; Yao, Wang; Vučković, Jelena; Majumdar, Arka; et al

    2015-03-16

    Engineering the electromagnetic environment of a nanoscale light emitter by a photonic cavity can significantly enhance its spontaneous emission rate through cavity quantum electrodynamics in the Purcell regime. This effect can greatly reduce the lasing threshold of the emitter1–5, providing the ultimate low-threshold laser system with small footprint, low power consumption and ultrafast modulation. A state-of-the-art ultra-low threshold nanolaser has been successfully developed though embedding quantum dots into photonic crystal cavity (PhCC)6–8. However, several core challenges impede the practical applications of this architecture, including the random positions and compositional fluctuations of the dots7, extreme difficulty in current injection8, and lackmore » of compatibility with electronic circuits7,8. Here, we report a new strategy to lase, where atomically thin crystalline semiconductor, i.e., a tungsten-diselenide (WSe2) monolayer, is nondestructively and deterministically introduced as a gain medium at the surface of a pre-fabricated PhCC. A new type of continuous-wave nanolaser operating in the visible regime is achieved with an optical pumping threshold as low as 27 nW at 130 K, similar to the value achieved in quantum dot PhCC lasers7. The key to the lasing action lies in the monolayer nature of the gain medium, which confines direct-gap excitons to within 1 nm of the PhCC surface. The surface-gain geometry allows unprecedented accessibilities to multi-functionalize the gain, enabling electrically pumped operation. Our scheme is scalable and compatible with integrated photonics for on-chip optical communication technologies.« less

  17. Monolayer semiconductor nanocavity lasers with ultralow thresholds

    SciTech Connect

    Wu, Sanfeng; Buckley, Sonia; Schaibley, John R.; Feng, Liefeng; Yan, Jiaqiang; Mandrus, David G.; Hatami, Fariba; Yao, Wang; Vučković, Jelena; Majumdar, Arka; Xu, Xiaodong

    2015-03-16

    Engineering the electromagnetic environment of a nanoscale light emitter by a photonic cavity can significantly enhance its spontaneous emission rate through cavity quantum electrodynamics in the Purcell regime. This effect can greatly reduce the lasing threshold of the emitter1–5, providing the ultimate low-threshold laser system with small footprint, low power consumption and ultrafast modulation. A state-of-the-art ultra-low threshold nanolaser has been successfully developed though embedding quantum dots into photonic crystal cavity (PhCC)6–8. However, several core challenges impede the practical applications of this architecture, including the random positions and compositional fluctuations of the dots7, extreme difficulty in current injection8, and lack of compatibility with electronic circuits7,8. Here, we report a new strategy to lase, where atomically thin crystalline semiconductor, i.e., a tungsten-diselenide (WSe2) monolayer, is nondestructively and deterministically introduced as a gain medium at the surface of a pre-fabricated PhCC. A new type of continuous-wave nanolaser operating in the visible regime is achieved with an optical pumping threshold as low as 27 nW at 130 K, similar to the value achieved in quantum dot PhCC lasers7. The key to the lasing action lies in the monolayer nature of the gain medium, which confines direct-gap excitons to within 1 nm of the PhCC surface. The surface-gain geometry allows unprecedented accessibilities to multi-functionalize the gain, enabling electrically pumped operation. Our scheme is scalable and compatible with integrated photonics for on-chip optical communication technologies.

  18. Use of a semiconductor-diode laser in urology

    NASA Astrophysics Data System (ADS)

    Watson, Graham M.

    1994-05-01

    The gallium arsenide semiconductor laser can emit in the near infrared where the depth of penetration into tissue is great although scattering is less than with the Nd:YAG laser. The laser is highly compact. It runs off a normal electrical outlet with no cooling requirement. It is therefore quiet and convenient. The laser has been assessed in a wide variety of applications in our urological department.

  19. Characterization of semiconductor surface-emitting laser wafers

    SciTech Connect

    Gourley, P.L.; Vawter, G.A.; Brennan, T.M.; Hammons, B.E.

    1990-01-01

    The development of epitaxial semiconductor surface-emitting lasers has begun in recent years. These lasers are ultra-short (few {mu}m) Fabry-Perot resonators comprising epitaxial multilayer semiconductor mirrors and quantum well active regions. The resonators are single crystals grown along the lasing axis by molecular beam epitaxy (MBE) or chemical vapor deposition (CVD). They offer significant advances over conventional cleaved, edge-emitting lasers for creating lasers with single elements of 2 dimensional arrays, low beam divergence, engineered active regions, single longitudinal modes, and improved temperature characteristics. To realize the high potential of these new laser structures, techniques for characterizing the laser wafer after growth and between fabrication steps must be developed. In this paper we discuss several optical techniques that we have developed for this emerging surface-emitting laser technology.

  20. Excitable solitons in a semiconductor laser with a saturable absorber

    NASA Astrophysics Data System (ADS)

    Turconi, Margherita; Prati, Franco; Barland, Stéphane; Tissoni, Giovanna

    2015-11-01

    Self-pulsing cavity solitons may exist in a semiconductor laser with an intracavity saturable absorber. They show locally the passive Q -switching behavior that is typical of lasers with saturable absorbers in the plane-wave approximation. Here we show that excitable cavity solitons are also possible in a suitable parameter range and characterize their excitable dynamics and properties.

  1. High power semiconductor lasers for deep space communications

    NASA Technical Reports Server (NTRS)

    Katz, J.

    1981-01-01

    The parameters of semiconductor lasers pertaining to their application as optical emitters are discussed. Several methods to overcome their basic disadvantage, which is the low level of powers they emit, are reviewed. Most of these methods are based on a coherent power combining of several lasers.

  2. Semiconductor Laser With Two-Dimensional Beam Steering

    NASA Technical Reports Server (NTRS)

    Katz, J.

    1986-01-01

    Modification of monolithic semiconductor injection laser capable of one-dimensional electronic beam steering enables deflection of beam in second direction. Such laser chip provides beam pointing or raster scanning for applications in optical communications, data processing, image scanning, and optical ranging.

  3. Broadly tunable DBR-free semiconductor disk laser

    NASA Astrophysics Data System (ADS)

    Yang, Zhou; Albrecht, Alexander R.; Cederberg, Jeffrey G.; Hackett, Shawn; Sheik-Bahae, Mansoor

    2016-03-01

    We report a DBR-free semiconductor disk lasers centered at 1160 nm with a tuning range of 78 nm, and ongoing effort on our DBR-free SDL centered at 1040 nm. Compared with conventional semiconductor disk lasers, DBR-free SDLs have a broader effective gain bandwidth. In CW operation, 2.5 W output power at 1160 nm and 6 W at 1055 nm were collected from the two lasers without thermal-rollover. Intracavity loss mitigation, currently underway, should improve power scaling and efficiency in these systems.

  4. Enhanced focusing of laser beams in semiconductor plasmas

    NASA Astrophysics Data System (ADS)

    Gupta, D. N.; Suk, H.

    2007-02-01

    The beating of two copropagating laser beams (having frequency difference Δω ≈ωp, where ωp is the plasma frequency) can resonantly excite a large amplitude plasma wave in a narrow-gap semiconductor [V. I. Berezhiani and S. M. Mahajan, Phys. Rev. B 55, 9247 (1997)]. The higher ponderomotive force on the electrons due to the plasma beat wave makes the medium highly nonlinear. As a result, the incident laser beams become self-focused due to the nonlinearity by the ponderomotive force. In this paper, we show the self-focusing and spot size evolution of the laser beams in semiconductor plasmas.

  5. Semiconductor Laser Multi-Spectral Sensing and Imaging

    PubMed Central

    Le, Han Q.; Wang, Yang

    2010-01-01

    Multi-spectral laser imaging is a technique that can offer a combination of the laser capability of accurate spectral sensing with the desirable features of passive multispectral imaging. The technique can be used for detection, discrimination, and identification of objects by their spectral signature. This article describes and reviews the development and evaluation of semiconductor multi-spectral laser imaging systems. Although the method is certainly not specific to any laser technology, the use of semiconductor lasers is significant with respect to practicality and affordability. More relevantly, semiconductor lasers have their own characteristics; they offer excellent wavelength diversity but usually with modest power. Thus, system design and engineering issues are analyzed for approaches and trade-offs that can make the best use of semiconductor laser capabilities in multispectral imaging. A few systems were developed and the technique was tested and evaluated on a variety of natural and man-made objects. It was shown capable of high spectral resolution imaging which, unlike non-imaging point sensing, allows detecting and discriminating objects of interest even without a priori spectroscopic knowledge of the targets. Examples include material and chemical discrimination. It was also shown capable of dealing with the complexity of interpreting diffuse scattered spectral images and produced results that could otherwise be ambiguous with conventional imaging. Examples with glucose and spectral imaging of drug pills were discussed. Lastly, the technique was shown with conventional laser spectroscopy such as wavelength modulation spectroscopy to image a gas (CO). These results suggest the versatility and power of multi-spectral laser imaging, which can be practical with the use of semiconductor lasers. PMID:22315555

  6. Direct solar pumping of semiconductor lasers: A feasibility study

    NASA Technical Reports Server (NTRS)

    Anderson, Neal G.

    1992-01-01

    This report describes results of NASA Grant NAG-1-1148, entitled Direct Solar Pumping of Semiconductor Lasers: A Feasibility Study. The goals of this study were to provide a preliminary assessment of the feasibility of pumping semiconductor lasers in space with directly focused sunlight and to identify semiconductor laser structures expected to operate at the lowest possible focusing intensities. It should be emphasized that the structures under consideration would provide direct optical-to-optical conversion of sunlight into laser light in a single crystal, in contrast to a configuration consisting of a solar cell or storage battery electrically pumping a current injection laser. With external modulation, such lasers could perhaps be efficient sources for intersatellite communications. We proposed specifically to develop a theoretical model of semiconductor quantum-well lasers photopumped by a broadband source, test it against existing experimental data where possible, and apply it to estimating solar pumping requirements and identifying optimum structures for operation at low pump intensities. These tasks have been accomplished, as described in this report of our completed project. The report is organized as follows: Some general considerations relevant to the solar-pumped semiconductor laser problem are discussed in Section 2, and the types of structures chosen for specific investigation are described. The details of the laser model we developed for this work are then outlined in Section 3. In Section 4, results of our study are presented, including designs for optimum lattice-matched and strained-layer solar-pumped quantum-well lasers and threshold pumping estimates for these structures. It was hoped at the outset of this work that structures could be identified which could be expected to operate continuously at solar photoexcitation intensities of several thousand suns, and this indeed turned out to be the case as described in this section. Our project is

  7. The 1.083 micron tunable CW semiconductor laser

    NASA Technical Reports Server (NTRS)

    Wang, C. S.; Chen, Jan-Shin; Lu, Ken-Gen; Ouyang, Keng

    1991-01-01

    A tunable CW laser is desired to produce light equivalent to the helium spectral line at 1.08 microns. This laser will serve as an optical pumping source for He-3 and He-4 atoms used in space magnetometers. This light source can be fabricated either as a semiconductor laser diode or a pumped solid state laser. Continuous output power of greater than 10 mW is desired. Semiconductor lasers can be thermally tuned, but must be capable of locking onto the helium resonance lines. Solid state lasers must have efficient pumping sources suitable for space configuration. Additional requirements are as follows: space magnetometer applications will include low mass (less than 0.5 kg), low power consumption (less than 0.75 W), and high stability/reliability for long missions (5-10 years).

  8. Studies of single-mode injection lasers and of quaternary materials. Volume 1: Single-mode constricted double-heterojunction AlGaAs diode lasers

    NASA Technical Reports Server (NTRS)

    Botez, D.

    1982-01-01

    Constricted double-heterojunction (CDH) lasers are presented as the class of single-mode nonplanar-substrate devices for which the lasing cavity is on the least resistive electrical path between the contact and the substrate. Various types of CDH structures are considered under three general topics: liquid-phase epitaxy over channeled substrates, lateral mode control, and current control in nonplanar-substrate devices. Ridge-guide CDH lasers have positive-index lateral-mode confinement and provide: single-mode CW operation to 7 mW/facet at room temperature and to 3 mW/facet at 150 C; light-current characteristics with second-harmonic distortion as low as -57 dB below the fundamental level; threshold-current temperature coefficients, as high as 375 C (pulsed) and 310 C (CW); constant external differential quantum efficiency to 100 C; and lasing operation to 170 C CW and 280 C pulsed. Semileakyguide CDH lasers have an asymmetric leaky cavity for lateral-mode confinement and provide single-mode operation to 15 to 20 mW/facet CW and to 50 mW/facet at 50% duty cycle. Modulation characteristics and preliminary reliability data are discussed.

  9. Semiconductor diode laser material and devices with emission in visible region of the spectrum

    NASA Technical Reports Server (NTRS)

    Ladany, I.; Kressel, H.

    1975-01-01

    Two alloy systems, (AlGa)As and (InGa)P, were studied for their properties relevant to obtaining laser diode operation in the visible region of the spectrum. (AlGa)As was prepared by liquid-phase epitaxy (LPE) and (InGa)P was prepared both by vapor-phase epitaxy and by liquid-phase epitaxy. Various schemes for LPE growth were applied to (InGa)P, one of which was found to be capable of producing device material. All the InGaP device work was done using vapor-phase epitaxy. The most successful devices were fabricated in (AlGa)As using heterojunction structures. At room temperature, the large optical cavity design yielded devices lasing in the red (7000 A). Because of the relatively high threshold due to the basic band structure limitation in this alloy, practical laser diode operation is presently limited to about 7300 A. At liquid-nitrogen temperature, practical continuous-wave operation was obtained at a wavelength of 6500 to 6600 A, with power emission in excess of 50 mW. The lowest pulsed lasing wavelength is 6280 A. At 223 K, lasing was obtained at 6770 A, but with high threshold currents. The work dealing with CW operation at room temperature was successful with practical operation having been achieved to about 7800 A.

  10. Laser dicing of silicon and composite semiconductor materials

    NASA Astrophysics Data System (ADS)

    Sibailly, Ochelio; Richerzhagen, Bernold

    2004-07-01

    Dicing of semiconductor wafers is an example of an application requiring a processing quality superior to what can be achieved using classical laser techniques. For this reason, sawing the wafers with a diamond-edged blade has been developed into a high-tech process, that guarantees good and reliable cuts for Silicon wafers of more than 300 microns thickness. Today, wafer thickness is getting thinner; down to 50 microns and also more brittle III-V compound semiconductors are used more frequently. On these thin wafers; the laser begins again to compete with the diamond saw, because of laser cutting-quality and cutting-speed, are increasing with decreasing wafer thickness. Conventional laser cutting however has the disadvantages of debris deposition on the wafer surface, weak chip fracture strength because of heat induced micro cracks. An elegant way to overcome these problems is to opt for the water-jet guided laser technology. In this technique the laser is conducted to the work piece by total internal reflection in a 'hair-thin' stable water-jet, comparable to an optical fiber. The water jet guided laser technique was developed originally in order to reduce the heat affected zone near the cut, but in fact the absence of beam divergence and the efficient melt xpulsion are also important advantages. In this presentation we will give an overview on today"s state of the art in dicing thin wafers, especially compound semiconductor wafers, using the water-jet guided laser technology.

  11. Integrated injection-locked semiconductor diode laser

    DOEpatents

    Hadley, G.R.; Hohimer, J.P.; Owyoung, A.

    1991-02-19

    A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet. 18 figures.

  12. Integrated injection-locked semiconductor diode laser

    DOEpatents

    Hadley, G. Ronald; Hohimer, John P.; Owyoung, Adelbert

    1991-01-01

    A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet.

  13. Reliability of Semiconductor Laser Packaging in Space Applications

    NASA Technical Reports Server (NTRS)

    Gontijo, Ivair; Qiu, Yueming; Shapiro, Andrew A.

    2008-01-01

    A typical set up used to perform lifetime tests of packaged, fiber pigtailed semiconductor lasers is described, as well as tests performed on a set of four pump lasers. It was found that two lasers failed after 3200, and 6100 hours under device specified bias conditions at elevated temperatures. Failure analysis of the lasers indicates imperfections and carbon contamination of the laser metallization, possibly from improperly cleaned photo resist. SEM imaging of the front facet of one of the lasers, although of poor quality due to the optical fiber charging effects, shows evidence of catastrophic damage at the facet. More stringent manufacturing controls with 100% visual inspection of laser chips are needed to prevent imperfect lasers from proceeding to packaging and ending up in space applications, where failure can result in the loss of a space flight mission.

  14. REVIEW High-power semiconductor separate-confinement double heterostructure lasers

    NASA Astrophysics Data System (ADS)

    Tarasov, I. S.

    2010-10-01

    The review is devoted to high-power semiconductor lasers. Historical reference is presented, physical and technological foundations are considered, and the concept of high-power semiconductor lasers is formulated. Fundamental and technological reasons limiting the optical power of a semiconductor laser are determined. The results of investigations of cw and pulsed high-power semiconductor lasers are presented. Main attention is paid to inspection of the results of experimental studies of single high-power semiconductor lasers. The review is mainly based on the data obtained in the laboratory of semiconductor luminescence and injection emitters at the A.F. Ioffe Physicotechnical Institute.

  15. 80 nm tunable DBR-free semiconductor disk laser

    NASA Astrophysics Data System (ADS)

    Yang, Z.; Albrecht, A. R.; Cederberg, J. G.; Sheik-Bahae, M.

    2016-07-01

    We report a widely tunable optically pumped distributed Bragg reflector (DBR)-free semiconductor disk laser with 6 W continuous wave output power near 1055 nm when using a 2% output coupler. Using only high reflecting mirrors, the lasing wavelength is centered at 1034 nm and can be tuned up to a record 80 nm by using a birefringent filter. We attribute such wide tunability to the unique broad effective gain bandwidth of DBR-free semiconductor disk lasers achieved by eliminating the active mirror geometry.

  16. Ring resonator based narrow-linewidth semiconductor lasers

    NASA Technical Reports Server (NTRS)

    Ksendzov, Alexander (Inventor)

    2005-01-01

    The present invention is a method and apparatus for using ring resonators to produce narrow linewidth hybrid semiconductor lasers. According to one embodiment of the present invention, the narrow linewidths are produced by combining the semiconductor gain chip with a narrow pass band external feedback element. The semi conductor laser is produced using a ring resonator which, combined with a Bragg grating, acts as the external feedback element. According to another embodiment of the present invention, the proposed integrated optics ring resonator is based on plasma enhanced chemical vapor deposition (PECVD) SiO.sub.2 /SiON/SiO.sub.2 waveguide technology.

  17. Mode control of semiconductor laser with diffraction and dispersion feedback

    SciTech Connect

    Xu, G.; Tsuji, R.; Fujii, K.; Nakayama, S.; Amano, M.; Kiyono, H.; Uchiyama, Y.; Tokita, Y.; Hanasawa, Y.; Mirov, S.B.; McCutcheon, M.J.; Whinnery, J.R.

    1996-05-01

    We have constructed two kinds of external cavity semiconductor laser. The first one is a diffraction feedback system consisting of a collimating lens, a diffraction grating and a mirror controlled by a PZT element. The second one is a dispersion feedback system in which the diffraction grating is replaced with a prism. Changing the angle of the external mirror by controlling the voltage to be supplied to the PZT, we have succeeded to tune the longitudinal mode of semiconductor laser continuously in the range of about 1 GHz. {copyright} {ital 1996 American Institute of Physics.}

  18. Nonlinear fibre-optic devices pumped by semiconductor disk lasers

    SciTech Connect

    Chamorovskiy, A Yu; Okhotnikov, Oleg G

    2012-11-30

    Semiconductor disk lasers offer a unique combination of characteristics that are particularly attractive for pumping Raman lasers and amplifiers. The advantages of disk lasers include a low relative noise intensity (-150 dB Hz{sup -1}), scalable (on the order of several watts) output power, and nearly diffraction-limited beam quality resulting in a high ({approx}70 % - 90 %) coupling efficiency into a single-mode fibre. Using this technology, low-noise fibre Raman amplifiers operating at 1.3 {mu}m in co-propagation configuration are developed. A hybrid Raman-bismuth doped fibre amplifier is proposed to further increase the pump conversion efficiency. The possibility of fabricating mode-locked picosecond fibre lasers operating under both normal and anomalous dispersion is shown experimentally. We demonstrate the operation of 1.38-{mu}m and 1.6-{mu}m passively mode-locked Raman fibre lasers pumped by 1.29-{mu}m and 1.48-{mu}m semiconductor disk lasers and producing 1.97- and 2.7-ps pulses, respectively. Using a picosecond semiconductor disk laser amplified with an ytterbium-erbium fibre amplifier, the supercontinuum generation spanning from 1.35 {mu}m to 2 {mu}m is achieved with an average power of 3.5 W. (invited paper)

  19. New achievements in ultralow-threshold semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Chen, T. R.; Zhao, Bin; Eng, L. E.; Zhuang, Y. H.; Yariv, Amnon

    1993-05-01

    Various semiconductor laser material system and device structures which have led to the ultralow threshold current (lasers and 0.35 mA (pulsed 0.25 mA) for high reflectivity coated lasers are realized. These low threshold lasers also display excellent dynamic behavior, a direct current modulation bandwidth of 4.6 GHz at a bias current of only 1 mA above threshold has been demonstrated.

  20. Semiconductor Laser Linewidth Measurements for Space Interferometry Applications

    NASA Technical Reports Server (NTRS)

    Dougherty, D. J.; Guttierrez, R. C.; Dubovitsky, S.; Forouhar, S.

    2000-01-01

    Narrow linewidth (<100KHz) semiconductor lasers are expected to be a key technology in NASA's stellar interferometry missions to search for planets around nearby stars. Long coherence length lasers are needed for precise (20 pm to 5 mn) measurements of the optical path difference. This work discusses results using the self-heterodyne delay technique to measure 1.3 micrometer InP based DFB lasers. We will also address practical issues concerning detection and elimination of back reflections, choice of fiber length and resolution, and measurement of laser 1/f and current supply noise.

  1. Integrated semiconductor twin-microdisk laser under mutually optical injection

    SciTech Connect

    Zou, Ling-Xiu; Liu, Bo-Wen; Lv, Xiao-Meng; Yang, Yue-De; Xiao, Jin-Long; Huang, Yong-Zhen

    2015-05-11

    We experimentally study the characteristics of an integrated semiconductor twin-microdisk laser under mutually optical injection through a connected optical waveguide. Based on the lasing spectra, four-wave mixing, injection locking, and period-two oscillation states are observed due to the mutually optical injection by adjusting the injected currents applied to the two microdisks. The enhanced 3 dB bandwidth is realized for the microdisk laser at the injection locking state, and photonic microwave is obtained from the electrode of the microdisk laser under the period-two oscillation state. The plentifully dynamical states similar as semiconductor lasers subject to external optical injection are realized due to strong optical interaction between the two microdisks.

  2. Recent progress in picosecond pulse generation from semiconductor lasers

    NASA Technical Reports Server (NTRS)

    Auyeung, J. C.; Johnston, A. R.

    1982-01-01

    This paper reviews the recent progress in producing picosecond optical pulses from semiconductor laser diodes. The discussion concentrates on the mode-locking of a semiconductor laser diode in an external resonator. Transform-limited optical pulses ranging from several picoseconds to subpicosecond durations have been observed with active and passive mode-locking. Even though continuing research on the influence of impurities and defects on the mode-locking process is still needed, this technique has good promise for being utilized in fiber-optic communication systems. Alternative methods of direct electrical and optical excitation to produce ultrashort laser pulses are also described. They can generate pulses of similar widths to those obtained by mode-locking. The pulses generated will find applications in laser ranging and detector response measurement.

  3. Laser scanner for testing semiconductor chips

    NASA Technical Reports Server (NTRS)

    Hall, T. C.

    1973-01-01

    Individual ''fingerprint'' signals are produced when system photoexcites chips. ''Fingerprints'' are analyzed for characteristics associated with defects, including many not visible to the naked eye. Electromagnetic radiation photogenerates free electrons and holes in semiconductor chip. These carriers produce electrical signals at terminals. Signals vary depending on what defects are present.

  4. Ultrafast laser-induced changes in optical properties of semiconductors

    SciTech Connect

    Chirila, C. C.; Lim, Freda C. H.; Gavaza, M. G.

    2012-04-01

    We study the effect of laser radiation on optical properties of semiconductors of industrial interest. The material is pumped with a laser of chosen central frequency, for which the absorption is maximal, thus inducing electron dynamics, which modifies the optical properties. By using an improved theoretical model, we study ultrafast dynamic changes in the refraction index and reflectivity corresponding to a wide frequency-interval of probing radiation and identify that interval where these optical changes are most significant.

  5. Improving the Reliability and Modal Stability of High Power 870 nm AlGaAs CSP Laser Diodes for Applications to Free Space Communication Systems

    NASA Technical Reports Server (NTRS)

    Connolly, J. C.; Alphonse, G. A.; Carlin, D. B.; Ettenberg, M.

    1991-01-01

    The operating characteristics (power-current, beam divergence, etc.) and reliability assessment of high-power CSP lasers is discussed. The emission wavelength of these lasers was optimized at 860 to 880 nm. The operational characteristics of a new laser, the inverse channel substrate planar (ICSP) laser, grown by metalorganic chemical vapor deposition (MOCVD), is discussed and the reliability assessment of this laser is reported. The highlights of this study include a reduction in the threshold current value for the laser to 15 mA and a degradation rate of less than 2 kW/hr for the lasers operating at 60 mW of peak output power.

  6. Visible light surface emitting semiconductor laser

    DOEpatents

    Olbright, Gregory R.; Jewell, Jack L.

    1993-01-01

    A vertical-cavity surface-emitting laser is disclosed comprising a laser cavity sandwiched between two distributed Bragg reflectors. The laser cavity comprises a pair of spacer layers surrounding one or more active, optically emitting quantum-well layers having a bandgap in the visible which serve as the active optically emitting material of the device. The thickness of the laser cavity is m .lambda./2n.sub.eff where m is an integer, .lambda. is the free-space wavelength of the laser radiation and n.sub.eff is the effective index of refraction of the cavity. Electrical pumping of the laser is achieved by heavily doping the bottom mirror and substrate to one conductivity-type and heavily doping regions of the upper mirror with the opposite conductivity type to form a diode structure and applying a suitable voltage to the diode structure. Specific embodiments of the invention for generating red, green, and blue radiation are described.

  7. Direct solar pumping of semiconductor lasers: A feasibility study

    NASA Technical Reports Server (NTRS)

    Anderson, Neal G.

    1991-01-01

    The primary goals of the feasibility study are the following: (1) to provide a preliminary assessment of the feasibility of pumping semiconductor lasers in space directly focused sunlight; and (2) to identify semiconductor laser structures expected to operate at the lowest possible focusing intensities. It should be emphasized that the structures under consideration would provide direct optical-to-optical conversion of sunlight into laser light in a single crystal, in contrast to a configuration consisting of a solar cell or battery electrically pumping a current injection laser. With external modulation, such lasers may prove to be efficient sources for intersatellite communications. We proposed to develop a theoretical model of semiconductor quantum-well lasers photopumped by a broadband source, test it against existing experimental data where possible, and apply it to estimating solar pumping requirements and identifying optimum structures for operation for operation at low pump intensities. This report outlines our progress toward these goals. Discussion of several technical details are left to the attached summary abstract.

  8. Atomic layer epitaxy of AlAs and AlGaAs

    NASA Astrophysics Data System (ADS)

    Meguro, T.; Iwai, S.; Aoyagi, Y.; Ozaki, K.; Yamamoto, Y.; Suzuki, T.; Okano, Y.; Hirata, A.

    1990-01-01

    Atomic layer epitaxy (ALE) of AlAs and AlGaAs with metalorganic vapor-phase epitaxy (MOVPE) under Ar-ion laser irradiation has been successfully realized in a triethylaluminum (TEA)/AsH 3 system for the first time. Comparison with the growth characteristics of MOVPE with alternative feeding modes of TMA/AsH 3 and TEA/AsH 3 is discussed. Application to laser-ALE of AlGaAs using a triethylgallium (TEG)/TEA/AsH 3 system is also discussed.

  9. A semiconductor laser with monolithically integrated dynamic polarization control.

    PubMed

    Holmes, B M; Naeem, M A; Hutchings, D C; Marsh, J H; Kelly, A E

    2012-08-27

    We report the first demonstration of a semiconductor laser monolithically integrated with an active polarization controller, which consists of a polarization mode converter followed by an active, differential phase shifter. High speed modulation of the device output polarization is demonstrated via current injection to the phase shifter section. PMID:23037101

  10. Optical-fiber-coupled optical bistable semiconductor lasers

    SciTech Connect

    Zhing Lichen; Tang Yunxin; Qin Ying; Guo Yili

    1986-12-01

    A compact, low input power optical bistable device, consisting of a photodetector, an optical fiber directional coupler, and a semiconductor laser diode, was presented. The principle is described graphically to explain the observed effects such as hysteresis, differential operational gain and memory functions.

  11. Optical trapping with Bessel beams generated from semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Sokolovskii, G. S.; Dudelev, V. V.; Losev, S. N.; Soboleva, K. K.; Deryagin, A. G.; Kuchinskii, V. I.; Sibbett, W.; Rafailov, E. U.

    2014-12-01

    In this paper, we study generation of Bessel beams from semiconductor lasers with high beam propagation parameter M2 and their utilization for optical trapping and manipulation of microscopic particles including living cells. The demonstrated optical tweezing with diodegenerated Bessel beams paves the way to replace their vibronic-generated counterparts for a range of applications towards novel lab-on-a-chip configurations.

  12. Laser complex for investigation of semiconductor nonlinear constants

    NASA Astrophysics Data System (ADS)

    Grabovski, Vitaly V.; Fekeshgazi, Ishtvan V.; May, Konstantin V.; Prokhorenko, Valentin I.; Yatskiv, Dmytro Y.

    1995-11-01

    The laser complex for the investigations of nonlinear properties of semiconductors has been designed. The results of the two-photon absorption coefficient of the chalcohenide glass As2S3 measurements are presented. The measurements accuracy and threshold sensitivity of the complex are estimated.

  13. Frequency chirping in semiconductor-optical fiber ring laser

    SciTech Connect

    Zhang, Jiangping; Ye, Peida )

    1990-01-01

    In this letter, a complete small-signal analysis for frequency chirping in the semiconductor-optical fiber ring laser is presented. It shows that chirp-to-power ratio (CPR) strongly depends on the junction phase shift, the optical coupling, and the phase detuning between two cavities, especially if the modulation frequency is below the gigahertz range. 7 refs.

  14. Dual-Wavelength Internal-Optically-Pumped Semiconductor Laser Diodes

    NASA Astrophysics Data System (ADS)

    Green, Benjamin

    Dual-wavelength laser sources have various existing and potential applications in wavelength division multiplexing, differential techniques in spectroscopy for chemical sensing, multiple-wavelength interferometry, terahertz-wave generation, microelectromechanical systems, and microfluidic lab-on-chip systems. In the drive for ever smaller and increasingly mobile electronic devices, dual-wavelength coherent light output from a single semiconductor laser diode would enable further advances and deployment of these technologies. The output of conventional laser diodes is however limited to a single wavelength band with a few subsequent lasing modes depending on the device design. This thesis investigates a novel semiconductor laser device design with a single cavity waveguide capable of dual-wavelength laser output with large spectral separation. The novel dual-wavelength semiconductor laser diode uses two shorter- and longer-wavelength active regions that have separate electron and hole quasi-Fermi energy levels and carrier distributions. The shorter-wavelength active region is based on electrical injection as in conventional laser diodes, and the longer-wavelength active region is then pumped optically by the internal optical field of the shorter-wavelength laser mode, resulting in stable dual-wavelength laser emission at two different wavelengths quite far apart. Different designs of the device are studied using a theoretical model developed in this work to describe the internal optical pumping scheme. The carrier transport and separation of the quasi-Fermi distributions are then modeled using a software package that solves Poisson's equation and the continuity equations to simulate semiconductor devices. Three different designs are grown using molecular beam epitaxy, and broad-area-contact laser diodes are processed using conventional methods. The modeling and experimental results of the first generation design indicate that the optical confinement factor of the

  15. Monolithically integrated polarisation mode convertor with a semiconductor laser

    NASA Astrophysics Data System (ADS)

    Naeem, Muhammad Azhar

    In this thesis, the design, optimisation, fabrication and operation of waveguide based semiconductor lasers, integrated with polarisation mode convertors (PMCs), is described. Devices are fabricated in the GaAs/AlGaAs and InP/AlGaInAs material systems, using two types of structures; single PMC and back-to-back PMCs. The convertor designs are based upon air trenches, of sub-wavelength dimensions, being introduced into waveguide structures in order to achieve an asymmetric cross-sectional profile, resulting in wave-pate functionality. The GaAs/AlGaAs PMCs are fabricated using reactive ion etching (RIE), and the phenomena of RIE lag technique is also exploited for obtaining the required asymmetric waveguide profile in a single etch step. These are then integrated with semiconductor lasers. The InP/AlGaInAs PMCs are fabricated using a combination of RIE and inductively coupled plasma (ICP) etching and are integrated with semiconductor lasers and also differential phase shifter (DPS) sections to realise devices with active polarisation control. Integrated devices fabricated on InP/AlGaInAs material system with a semiconductor laser, a PMC followed by a DPS section yields ~40 % polarisation mode conversion whilst the DPS section is held at the transparency condition. Greater than 85 % polarisation mode conversion was also obtained with back to back PMCs, which was complement to the devices fabricated with a single PMC. Furthermore, a first active polarisation controller, monolithically integrated with a semiconductor laser is reported. High speed modulation of the integrated device with 300 Mbps is also demonstrated via current injection to the phase shifter section of the device.

  16. On the nonlinear theory of Fabry–Perot semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Noppe, Michael G.

    2016-05-01

    Fundamentals of the nonlinear theory of Fabry–Perot semiconductor lasers have been developed, an integral part of which is natural linewidth theory. The formula for gain depending on the energy flux specifies the basic nonlinear effect in a laser. Necessary conditions for stimulated emission of the first and second kind are presented. Maxwell’s equations in the gain medium are applied to obtain equations for energy flux and for the description of non-linear phase effect. Based on the nonlinear theory, a number of experiments have been simulated; it indicates that the nonlinear theory is a new paradigm in laser theory. The nonlinear theory has provided recommendations for the development of lasers with improved properties, such as lasers with increased power and lasers with reduced natural linewidth.

  17. Phase-locked semiconductor laser array with separate contacts

    NASA Technical Reports Server (NTRS)

    Katz, J.; Kapon, E.; Lindsey, C.; Margalit, S.; Shreter, U.; Yariv, A.

    1983-01-01

    A new monolithic phase-locked semiconductor laser array has been fabricated. Employing two-level metallization, each of the eight elements in the array has a separate contact, thus making it possible to compensate for device nonuniformities and control the near-field and far-field patterns. Threshold currents are approximately 60 mA for each 5-micron-wide laser in the array. Phase locking has been observed via the narrowing of the far-field pattern. Experimental results are compared to those obtained from the same arrays operated with all the lasers connected in parallel.

  18. Use of a semiconductor diode laser in urology

    NASA Astrophysics Data System (ADS)

    Watson, Graham M.; Anson, K.

    1993-05-01

    The gallium arsenide semiconductor laser at 805 nm has been used with a variety of delivery fibers to produce actions varying from incision to interstitial coagulation. Clinical experience at this early stage suggests that the laser can be used to cut skin and connective tissue efficiently in air. It may prove at least as effective as the neodymium YAG laser for interstitial coagulation of tumors or prostate. Further efforts are required to promote its action cutting underwater and as a coagulator both in air and water.

  19. Substrate-emitting semiconductor laser with a trapezoidal active region

    SciTech Connect

    Dikareva, N V; Nekorkin, S M; Karzanova, M V; Zvonkov, B N; Aleshkin, V Ya; Dubinov, A A; Afonenko, A A

    2014-04-28

    Semiconductor lasers with a narrow (∼2°) directional pattern in the planes both parallel and perpendicular to the p–n junction are fabricated. To achieve a low radiation divergence in the p–n junction plane, the active region in this plane was designed in the form of a trapezium. The narrow directional pattern in the plane perpendicular to the p–n junction was ensured by the use of a leaky mode, through which more than 90% of laser power was coupled out. (lasers)

  20. Electrically pumped edge-emitting photonic bandgap semiconductor laser

    DOEpatents

    Lin, Shawn-Yu; Zubrzycki, Walter J.

    2004-01-06

    A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

  1. Semiconductor laser devices having lateral refractive index tailoring

    DOEpatents

    Ashby, Carol I. H.; Hadley, G. Ronald; Hohimer, John P.; Owyoung, Adelbert

    1990-01-01

    A broad-area semiconductor laser diode includes an active lasing region interposed between an upper and a lower cladding layer, the laser diode further comprising structure for controllably varying a lateral refractive index profile of the diode to substantially compensate for an effect of junction heating during operation. In embodiments disclosed the controlling structure comprises resistive heating strips or non-radiative linear junctions disposed parallel to the active region. Another embodiment discloses a multi-layered upper cladding region selectively disordered by implanted or diffused dopant impurities. Still another embodiment discloses an upper cladding layer of variable thickness that is convex in shape and symmetrically disposed about a central axis of the active region. The teaching of the invention is also shown to be applicable to arrays of semiconductor laser diodes.

  2. Quantum weak turbulence with applications to semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Lvov, Y. V.; Binder, R.; Newell, A. C.

    1998-10-01

    Based on a model Hamiltonian appropriate for the description of fermionic systems such as semiconductor lasers, we describe a natural asymptotic closure of the BBGKY hierarchy in complete analogy with that derived for classical weak turbulence. The main features of the interaction Hamiltonian are the inclusion of full Fermi statistics containing Pauli blocking and a simple, phenomenological, uniformly weak two-particle interaction potential equivalent to the static screening approximation. We find a new class of solutions to the quantum kinetic equation which are analogous to the Kolmogorov spectra of hydrodynamics and classical weak turbulence. They involve finite fluxes of particles and energy in momentum space and are particularly relevant for describing the behavior of systems containing sources and sinks. We make a prima facie case that these finite flux solutions can be important in the context of semiconductor lasers and show how they might be used to enhance laser performance.

  3. Confocal unstable-resonator semiconductor laser

    NASA Technical Reports Server (NTRS)

    Salzman, J.; Lang, R.; Yariv, A.; Larson, A.

    1986-01-01

    GaAs/GaAlAs heterostructure lasers with a monolithic confocal unstable resonator were demonstrated. The curved mirrors satisfying the confocal condition were fabricated by etching. Close to threshold, the lasers operate in a single lateral mode with a nearly collimated output beam. A single-lobe far-field intensity distribution as narrow as 1.9-deg full width at half maximum was measured.

  4. Quantum weak turbulence with applications to semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Lvov, Yuri Victorovich

    Based on a model Hamiltonian appropriate for the description of fermionic systems such as semiconductor lasers, we describe a natural asymptotic closure of the BBGKY hierarchy in complete analogy with that derived for classical weak turbulence. The main features of the interaction Hamiltonian are the inclusion of full Fermi statistics containing Pauli blocking and a simple, phenomenological, uniformly weak two particle interaction potential equivalent to the static screening approximation. The resulting asymytotic closure and quantum kinetic Boltzmann equation are derived in a self consistent manner without resorting to a priori statistical hypotheses or cumulant discard assumptions. We find a new class of solutions to the quantum kinetic equation which are analogous to the Kolmogorov spectra of hydrodynamics and classical weak turbulence. They involve finite fluxes of particles and energy across momentum space and are particularly relevant for describing the behavior of systems containing sources and sinks. We explore these solutions by using differential approximation to collision integral. We make a prima facie case that these finite flux solutions can be important in the context of semiconductor lasers. We show that semiconductor laser output efficiency can be improved by exciting these finite flux solutions. Numerical simulations of the semiconductor Maxwell Bloch equations support the claim.

  5. Power conversion efficiency of semiconductor injection lasers and laser arrays in CW operation

    NASA Technical Reports Server (NTRS)

    Katz, J.

    1985-01-01

    The problem of optimizing power conversion efficiency of semiconductor lasers and laser arrays and minimizing efficiency degradation due to temperature effects is treated. A method for calculating this efficiency is described and some calculated results are presented and discussed. Under some conditions, a small increase in the thermal resistance of the device can result in a large reduction of its efficiency. Temperature effects are important in high-power semiconductor laser, and in particular in laser arrays, where low thermal resistance heat sinking may be crucial to the device operation.

  6. A proposal for Coulomb assisted laser cooling of piezoelectric semiconductors

    NASA Astrophysics Data System (ADS)

    Nia, Iman Hassani; Mohseni, Hooman

    2014-07-01

    Anti-Stokes laser cooling of semiconductors as a compact and vibration-free method is very attractive. While it has achieved significant milestones, increasing its efficiency is highly desirable. The main limitation is the lack of the pristine material quality with high luminescence efficiency. Here, we theoretically demonstrate that the Coulomb interaction among electrons and holes in piezoelectric heterostructures could lead to coherent damping of acoustic phonons; rendering a significantly higher efficiency that leads to the possibility of cooling a broad range of semiconductors.

  7. A proposal for Coulomb assisted laser cooling of piezoelectric semiconductors

    SciTech Connect

    Nia, Iman Hassani; Mohseni, Hooman

    2014-07-28

    Anti-Stokes laser cooling of semiconductors as a compact and vibration-free method is very attractive. While it has achieved significant milestones, increasing its efficiency is highly desirable. The main limitation is the lack of the pristine material quality with high luminescence efficiency. Here, we theoretically demonstrate that the Coulomb interaction among electrons and holes in piezoelectric heterostructures could lead to coherent damping of acoustic phonons; rendering a significantly higher efficiency that leads to the possibility of cooling a broad range of semiconductors.

  8. Synchronous characterization of semiconductor microcavity laser beam.

    PubMed

    Wang, T; Lippi, G L

    2015-06-01

    We report on a high-resolution double-channel imaging method used to synchronously map the intensity- and optical-frequency-distribution of a laser beam in the plane orthogonal to the propagation direction. The synchronous measurement allows us to show that the laser frequency is an inhomogeneous distribution below threshold, but that it becomes homogeneous across the fundamental Gaussian mode above threshold. The beam's tails deviations from the Gaussian shape, however, are accompanied by sizeable fluctuations in the laser wavelength, possibly deriving from manufacturing details and from the influence of spontaneous emission in the very low intensity wings. In addition to the synchronous spatial characterization, a temporal analysis at any given point in the beam cross section is carried out. Using this method, the beam homogeneity and spatial shape, energy density, energy center, and the defects-related spectrum can also be extracted from these high-resolution pictures. PMID:26133832

  9. Synchronous characterization of semiconductor microcavity laser beam

    SciTech Connect

    Wang, T. Lippi, G. L.

    2015-06-15

    We report on a high-resolution double-channel imaging method used to synchronously map the intensity- and optical-frequency-distribution of a laser beam in the plane orthogonal to the propagation direction. The synchronous measurement allows us to show that the laser frequency is an inhomogeneous distribution below threshold, but that it becomes homogeneous across the fundamental Gaussian mode above threshold. The beam’s tails deviations from the Gaussian shape, however, are accompanied by sizeable fluctuations in the laser wavelength, possibly deriving from manufacturing details and from the influence of spontaneous emission in the very low intensity wings. In addition to the synchronous spatial characterization, a temporal analysis at any given point in the beam cross section is carried out. Using this method, the beam homogeneity and spatial shape, energy density, energy center, and the defects-related spectrum can also be extracted from these high-resolution pictures.

  10. Laser damage mechanisms in conductive widegap semiconductor films.

    PubMed

    Yoo, Jae-Hyuck; Menor, Marlon G; Adams, John J; Raman, Rajesh N; Lee, Jonathan R I; Olson, Tammy Y; Shen, Nan; Suh, Joonki; Demos, Stavros G; Bude, Jeff; Elhadj, Selim

    2016-08-01

    Laser damage mechanisms of two conductive wide-bandgap semiconductor films - indium tin oxide (ITO) and silicon doped GaN (Si:GaN) were studied via microscopy, spectroscopy, photoluminescence (PL), and elemental analysis. Nanosecond laser pulse exposures with a laser photon energy (1.03 eV, 1064 nm) smaller than the conductive films bandgaps were applied and radically different film damage morphologies were produced. The laser damaged ITO film exhibited deterministic features of thermal degradation. In contrast, laser damage in the Si:GaN film resulted in highly localized eruptions originating at interfaces. For ITO, thermally driven damage was related to free carrier absorption and, for GaN, carbon complexes were proposed as potential damage precursors or markers. PMID:27505731

  11. Numerical modeling of vertical cavity semiconductor lasers

    SciTech Connect

    Chow, W.W.; Hadley, G.R.

    1996-08-01

    A vertical cavity surface emitting laser (VCSEL) is a diode laser whose optical cavity is formed by growing or depositing DBR mirror stacks that sandwich an active gain region. The resulting short cavity supports lasing into a single longitudinal mode normal to the wafer, making these devices ideal for a multitude of applications, ranging from high-speed communication to high-power sources (from 2D arrays). This report describes the development of a numerical VCSEL model, whose goal is to both further their understanding of these complex devices and provide a tool for accurate design and data analysis.

  12. Wavelength-resonant surface-emitting semiconductor laser

    DOEpatents

    Brueck, Steven R. J.; Schaus, Christian F.; Osinski, Marek A.; McInerney, John G.; Raja, M. Yasin A.; Brennan, Thomas M.; Hammons, Burrell E.

    1989-01-01

    A wavelength resonant semiconductor gain medium is disclosed. The essential feature of this medium is a multiplicity of quantum-well gain regions separated by semiconductor spacer regions of higher bandgap. Each period of this medium consisting of one quantum-well region and the adjacent spacer region is chosen such that the total width is equal to an integral multiple of 1/2 the wavelength in the medium of the radiation with which the medium is interacting. Optical, electron-beam and electrical injection pumping of the medium is disclosed. This medium may be used as a laser medium for single devices or arrays either with or without reflectors, which may be either semiconductor or external.

  13. Laser cooling of a semiconductor by 40 kelvin.

    PubMed

    Zhang, Jun; Li, Dehui; Chen, Renjie; Xiong, Qihua

    2013-01-24

    Optical irradiation accompanied by spontaneous anti-Stokes emission can lead to cooling of matter, in a phenomenon known as laser cooling, or optical refrigeration, which was proposed by Pringsheim in 1929. In gaseous matter, an extremely low temperature can be obtained in diluted atomic gases by Doppler cooling, and laser cooling of ultradense gas has been demonstrated by collisional redistribution of radiation. In solid-state materials, laser cooling is achieved by the annihilation of phonons, which are quanta of lattice vibrations, during anti-Stokes luminescence. Since the first experimental demonstration in glasses doped with rare-earth metals, considerable progress has been made, particularly in ytterbium-doped glasses or crystals: recently a record was set of cooling to about 110 kelvin from the ambient temperature, surpassing the thermoelectric Peltier cooler. It would be interesting to realize laser cooling in semiconductors, in which excitonic resonances dominate, rather than in systems doped with rare-earth metals, where atomic resonances dominate. However, so far no net cooling in semiconductors has been achieved despite much experimental and theoretical work, mainly on group-III-V gallium arsenide quantum wells. Here we report a net cooling by about 40 kelvin in a semiconductor using group-II-VI cadmium sulphide nanoribbons, or nanobelts, starting from 290 kelvin. We use a pump laser with a wavelength of 514 nanometres, and obtain an estimated cooling efficiency of about 1.3 per cent and an estimated cooling power of 180 microwatts. At 100 kelvin, 532-nm pumping leads to a net cooling of about 15 kelvin with a cooling efficiency of about 2.0 per cent. We attribute the net laser cooling in cadmium sulphide nanobelts to strong coupling between excitons and longitudinal optical phonons (LOPs), which allows the resonant annihilation of multiple LOPs in luminescence up-conversion processes, high external quantum efficiency and negligible background

  14. Uncooled pulsed zinc oxide semiconductor laser

    NASA Astrophysics Data System (ADS)

    Bogdankevich, O. V.; Darznek, S. A.; Zverev, M. M.; Kostin, N. N.; Krasavina, E. M.

    1985-02-01

    An optimized ZnO laser which operates at ambient temperature without cooling is reported, along with extension of the design to form a multielement high-power laser. ZnO single crystal plane-parallel wafers 0.22 mm thick, covered with total and semi-transparent coatings, were exposed to a 200 keV electron beam with a 10 nsec pulse and a current density up to 1 kA/sq cm. No damage was observed in the crystals at saturation. A 7 percent maximum efficiency at a reflection coefficient (RC) of 0.4 was associated with a maximum output of 25 kW and a light power density of 3 MW/sq cm. Cementing a ZnO wafer to a sapphire substrate, applying the same type of coatings and working with a RC of 0.6 yielded a maximum power of 300 kW/sq cm.

  15. Simulation studies of bifurcation and chaos in semiconductor lasers

    SciTech Connect

    Tang, M.; Wang, S.

    1986-04-07

    We apply the phase portrait analysis for photon density and carrier density to analyze simulation results obtained from the rate equations for semiconductor lasers. On the two-dimensional bifurcation diagram of modulation depth and modulation frequency, there are six regions: periodic pulse, continuous oscillation wave, chaos, period doubling of single period, period multiplying of single period, and period doubling of two period. The region of chaos is located below the region of periodic pulse. By properly choosing the modulation frequency, chaotic behavior can be avoided. A normalized two-dimensional bifurcation diagram defining the periodic pulse region is presented for the purpose of locating the suitable region for modulation of a semiconductor laser.

  16. Diffraction coupled phase-locked semiconductor laser array

    NASA Technical Reports Server (NTRS)

    Katz, J.; Margalit, S.; Yariv, A.

    1983-01-01

    A new monolithic, diffraction coupled phase-locked semiconductor laser array has been fabricated. Stable narrow far-field patterns (approximately 3 deg) and peak power levels of 1 W have been obtained for 100-micron-wide devices with threshold currents as low as 250 mA. Such devices may be useful in applications where high power levels and stable radiation patterns are needed.

  17. Separate-contact phase-locked semiconductor laser arrays

    NASA Technical Reports Server (NTRS)

    Katz, J.; Kapon, E.; Lindsey, C.; Margalit, S.; Yariv, A.

    1985-01-01

    The novel optoelectronic devices discussed, phase-locked semiconductor laser arrays with separate contacts can perform a variety of near field and far field pattern tailoring functions and control mutual coherence among array elements, as well as lasing wavelength selectivity and tunability. Attention is presently given to experimental results from such arrays, which indicate that the threshold currents of the 4-micron wide lasers employed are typically 60 mA. The separate contacts to each one of them are provided by means of two-level metallization.

  18. High density semiconductor nanodots by direct laser fabrication

    NASA Astrophysics Data System (ADS)

    Haghizadeh, Anahita; Yang, Haeyeon

    2016-03-01

    We report a direct method of fabricating high density nanodots on the GaAs(001) surfaces using laser irradiations on the surface. Surface images indicate that the large clumps are not accompanied with the formation of nanodots even though its density is higher than the critical density above which detrimental large clumps begin to show up in the conventional Stranski-Krastanov growth technique. Atomic force microscopy is used to image the GaAs(001) surfaces that are irradiated by high power laser pulses interferentially. The analysis suggests that high density quantum dots be fabricated directly on semiconductor surfaces.

  19. Optically pumped DBR-free semiconductor disk lasers.

    PubMed

    Yang, Zhou; Albrecht, Alexander R; Cederberg, Jeffrey G; Sheik-Bahae, Mansoor

    2015-12-28

    We report high power distributed Bragg reflector (DBR)-free semiconductor disk lasers. With active regions lifted off and bonded to various transparent heatspreaders, the high thermal impedance and narrow bandwidth of DBRs are mitigated. For a strained InGaAs multi-quantum-well sample bonded to a single-crystalline chemical-vapor deposited diamond, a maximum CW output power of 2.5 W and a record 78 nm tuning range centered at λ≈1160 nm was achieved. Laser operation using a total internal reflection geometry is also demonstrated. Furthermore, analysis for power scaling, based on thermal management, is presented. PMID:26831984

  20. Grating-tuned semiconductor MOPA lasers for precision spectroscopy

    SciTech Connect

    Marquardt, J.H.; Cruz, F.C.; Stephens, M.; Oates, C.W.; Hollberg, L.W.; Bergquist, J.C.; Welch, D.F.; Mehuys, D.; Sanders, S.

    1996-12-31

    A standard grating-tuned extended-cavity diode laser is used for injection seeding of a tapered semiconductor laser/amplifier. With sufficient injection power the output of the amplifier takes on the spectral characteristics of the master laser. The authors have constructed master-oscillator power-amplifier (MOPA) systems that operate near 657 nm, 675 nm, 795 nm, and 850 nm. Although the characteristics vary from system to system, the authors have demonstrated output powers of greater than 700 mW in a single spatial mode, linewidths less than 1 kHz, coarse tuning greater than 20 nm, and continuous single-frequency scanning greater than 150 GHz. The authors discuss the spectroscopic applications of these high power, highly coherent, tunable diode lasers as applied to Ca, Hg{sup +}, I{sub 2}, and two-photon transitions in Cs.

  1. Modes in light wave propagating in semiconductor laser

    NASA Technical Reports Server (NTRS)

    Manko, Margarita A.

    1994-01-01

    The study of semiconductor laser based on an analogy of the Schrodinger equation and an equation describing light wave propagation in nonhomogeneous medium is developed. The active region of semiconductor laser is considered as optical waveguide confining the electromagnetic field in the cross-section (x,y) and allowing waveguide propagation along the laser resonator (z). The mode structure is investigated taking into account the transversal and what is the important part of the suggested consideration longitudinal nonhomogeneity of the optical waveguide. It is shown that the Gaussian modes in the case correspond to spatial squeezing and correlation. Spatially squeezed two-mode structure of nonhomogeneous optical waveguide is given explicitly. Distribution of light among the laser discrete modes is presented. Properties of the spatially squeezed two-mode field are described. The analog of Franck-Condon principle for finding the maxima of the distribution function and the analog of Ramsauer effect for control of spatial distribution of laser emission are discussed.

  2. Spatial Solitons in Algaas Waveguides

    NASA Astrophysics Data System (ADS)

    Kang, Jin Ung

    In this work, by measuring the two-, three-photon absorption, and the nonlinear refractive index coefficients, a useful bandwidth for an all-optical switching applications in the AlGaAs below half the band gap is identified. Operating in this material system, several types of spatial solitons such as fundamental bright solitons, Vector solitons, and Manakov solitons are experimentally demonstrated. The propagation and the interaction behaviors of these solitons are studied experimentally and numerically. The distinct properties of each soliton are discussed along with some possible applications. Some applications, such as all -optical switching based on spatial soliton dragging and the efficient guiding of orthogonally polarized femtosecond pulses by a bright spatial soliton, are experimentally demonstrated. The signal gain due to an ultrafast polarization coupling, better known as Four Wave Mixing (FWM) is demonstrated in a channel waveguide. The effects of FWM are studied experimentally and numerically. This effect is also used to demonstrate polarization switching. The linear and nonlinear properties of AlGaAs/GaAs multiple quantum well waveguides are measured. Anisotropic two photon absorption and nonlinear refractive indices near half the band gap are measured along with the linear birefringence for several different quantum well structures. The usefulness of multiple quantum well structures for an all -optical switching because of anisotropic nature of this material system is discussed.

  3. Multi-spectral imaging with mid-infrared semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Wang, Yi; Wang, Yang; Le, Han Q.

    2006-01-01

    Multi-spectral laser imaging can be a useful technology for target discrimination, classification, and identification based on object spectral signatures. The mid-IR region (~3-14 μm) is particularly rich of molecular spectroscopic fingerprints, but the technology has been under utilized. Compact, potentially inexpensive semiconductor lasers may allow more cost-effective applications. This paper describes a development of semiconductor-laser-based multi-spectral imaging for both near-IR and mid-IR, and demonstrates the potential of this technology. The near-IR study employed 7 wavelengths from 0.635-1.55 μm, and used for system engineering evaluation as well as for studying the fundamental aspects of multi-spectral laser imaging. These include issues of wavelength-dependence scattering as a function of incident and receiving angle and the polarization effects. Stokes vector imaging and degree-of-linear-polarization were shown to reveal significant information to characterize the targets. The mid-IR study employed 4 wavelengths from 3.3-9.6 μm, and was applied to diverse targets that consist of natural and man-made materials and household objects. It was shown capable to resolve and distinguish small spectral differences among various targets, thanks to the laser radiometric and spectral accuracy. Colorless objects in the visible were shown with "colorful" signatures in the mid-IR. An essential feature of the study is an advanced system architecture that employs wavelength-division-multiplexed laser beams for high spectral fidelity and resolution. In addition, unlike conventional one-transmitter and one receiver design, the system is based on a scalable CDMA network concept with multiple transmitters and receivers to allow efficient information acquisition. The results suggest that multi-spectral laser imaging in general can be a unique and powerful technology for wide ranging applications.

  4. Research on the radiation exposure “memory effects” in AlGaAs heterostructures

    NASA Astrophysics Data System (ADS)

    Gradoboev, A. V.; Sednev, V. V.

    2015-04-01

    Radiation exposure and long running time cause degradation of semiconductors' structures as well as semiconductors based on these structures. Besides, long running time can be the reason of partial radiation defects annealing. The purpose of the research work is to study the “memory effect” that happens during fast neuron radiation in AlGaAs heterostructures. Objects of the research are Infrared Light Emitting Electrodes (IRED) based on doubled AlGaAs heterostructures. During the experimental research LEDs were preliminarily radiated with fast neutrons, and radiation defects were annealed within the condition of current training with high temperatures, then emission power was measured. The research proved the existence of the “memory effect” that results in radiation stability enhancement with subsequent radiation. Possible mechanisms of the “memory effect” occurrence are under review.

  5. Estimation of Frequency Noise in Semiconductor Lasers Due to Mechanical Thermal Noise

    NASA Technical Reports Server (NTRS)

    Numata, Kenji; Camp, Jordan

    2012-01-01

    We evaluate mechanical thermal noise in semiconductor lasers, applying a methodology developed for fixed-spacer cavities for laser frequency stabilization. Our simple model determines an underlying fundamental limit for the frequency noise of free-running semiconductor laser, and provides a framework: where the noise may be potentially reduced with improved design.

  6. Two-photon passive electro-optic upconversion in a GaAs /AlGaAs heterostructure device

    NASA Astrophysics Data System (ADS)

    Zhao, Lai; Thompson, Pete; Faleev, N. N.; Prather, D. W.; Appelbaum, Ian

    2007-03-01

    A semiconductor heterostructure device that requires no external power source to upconvert two low-energy photons into one higher-energy photon is proposed. This passive device is fabricated in the AlGaAs /GaAs material system and it is used to demonstrate photon upconversion from 808to710nm at room temperature.

  7. Miniature semiconductor ring laser sources for integrated optical circuits

    NASA Astrophysics Data System (ADS)

    Chen, Wei; Laybourn, Peter J. R.; Jezierski, Andrzej F.; Krauss, Thomas F.; Webb, P. W.

    1990-08-01

    Miniature semiconductor lasers with resonant ring cavities in both heterostructure and quantum well material have been developed at Glasgow. Two laser structures, rib ring laser and polyimide-embedded ring laser, have been investigated. The resonators produced are between 10 and 1 00im in diameter and because of their small size, the longitudial ,mode spacing is increased over that of conventional cleaved-cavity lasers, reducing the numbers of lasing modes in the mode spectrum. But the small structure will cause thermal problems because of the difficulty of heat dissipation. Detailed thermal measurements have been made on the surface of the laser by an infrared thermal imaging technique. The results give a fair qualitative assessment of the thermal behaviour of a ring laser compared to theoretical modelling results, and show that the temperature rise of the lasing ring is excessive at lasing threshold current for the very small ring and narrow rib structure. Increasing the ring diameter, with a shallower or wider rib structure or even a pill-box structure, will improve heat dissipation and reduce threshold current.

  8. Chaos-pass filtering in injection-locked semiconductor lasers

    SciTech Connect

    Murakami, Atsushi; Shore, K. Alan

    2005-11-15

    Chaos-pass filtering (CPF) of semiconductor lasers has been studied theoretically. CPF is a phenomenon which occurs in laser chaos synchronization by injection locking and is a fundamental technique for the extraction of messages at the receiver laser in chaotic communications systems. We employ a simple theory based on driven damped oscillators to clarify the physical background of CPF. The receiver laser is optically driven by injection from the transmitter laser. We have numerically investigated the response characteristics of the receiver when it is driven by periodic (message) and chaotic (carrier) signals. It is thereby revealed that the response of the receiver laser in the two cases is quite different. For the periodic drive, the receiver exhibits a response depending on the signal frequency, while the chaotic drive provides a frequency-independent synchronous response to the receiver laser. We verify that the periodic and chaotic drives occur independently in the CPF response, and, consequently, CPF can be clearly understood in the difference of the two drives. Message extraction using CPF is also examined, and the validity of our theoretical explanation for the physical mechanism underlying CPF is thus verified.

  9. Chaos-pass filtering in injection-locked semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Murakami, Atsushi; Shore, K. Alan

    2005-11-01

    Chaos-pass filtering (CPF) of semiconductor lasers has been studied theoretically. CPF is a phenomenon which occurs in laser chaos synchronization by injection locking and is a fundamental technique for the extraction of messages at the receiver laser in chaotic communications systems. We employ a simple theory based on driven damped oscillators to clarify the physical background of CPF. The receiver laser is optically driven by injection from the transmitter laser. We have numerically investigated the response characteristics of the receiver when it is driven by periodic (message) and chaotic (carrier) signals. It is thereby revealed that the response of the receiver laser in the two cases is quite different. For the periodic drive, the receiver exhibits a response depending on the signal frequency, while the chaotic drive provides a frequency-independent synchronous response to the receiver laser. We verify that the periodic and chaotic drives occur independently in the CPF response, and, consequently, CPF can be clearly understood in the difference of the two drives. Message extraction using CPF is also examined, and the validity of our theoretical explanation for the physical mechanism underlying CPF is thus verified.

  10. Quantum well lasers

    SciTech Connect

    Zory, P.S. Jr.

    1993-01-01

    The semiconductor quantum well (QW) laser structure is rapidly becoming the preferred design in many applications because of its low threshold, design flexibility, and high reliability. The book begins with a brief, interesting foreword by C.H. Henry on the history of the QW laser concept and its early development. Following this introduction is a 79-page chapter by S.W. Corzine et al. on optical gain in III-V bulk and QW lasers. The next chapter on intraband relaxation and line broadening effects by M. Asada is an excellent expanded review of a topic introduced by Corzine. The remaining chapters describe multiple QW lasers, low-threshold QW laser, special aspects of AlGaAs and (short-wavelength) InGaAsP lasers, valence-band engineering, strained-layer QW lasers, AlGaInP QW lasers, and quantum wire lasers. These chapters are well written by recognized experts in the field.

  11. Mode beating and heterodyning of monolithically integrated semiconductor ring lasers

    NASA Astrophysics Data System (ADS)

    Liu, Chiyu

    Monolithically integrated semiconductor ring lasers (SRLs) are attractive optical sources for optoelectronic integrated circuits (OEICs) because they do not require any feedback elements, do not have parts exposed to external ambient, and can operate in a traveling-wave mode. They are promising candidates for wavelength filtering, unidirectional traveling-wave operation, and multiplexing/demultiplexing applications. Ring lasers can also be used as ultrashort pulse generators using various mode-locking schemes and as active gyro components. However, the SRL is a very complicated dynamic system, which requires more investigations to understand the performance regarding details of the design and fabrication. As a part of NASA-supported project "Monolithically Integrated Semiconductor Ring Laser Gyro for Space Applications", this dissertation research was focused on design and characterization of a novel monolithically integrated rotation sensor based on two large-size independent SRLs. Numerical modeling based on the beam propagation method (BPM) was used to design the fabrication parameters for the single-mode ridge-waveguide ring cavity and directional coupler waveguides. The mode internal coupling in single lateral-mode laser diodes with InGaAs/GaAs material system was investigated by optical experiments and numerical modeling. To gain the understanding of the SRL performance, optical and electrical characterization was performed on fabricated SRLs. Particular emphasis was placed on the study of optical and radio frequency (RF) beating spectra of longitudinal modes of ring lasers. RF measurements provide high accuracy in the diagnosis of laser oscillation parameters by purely electronic means, particularly in the measurement of the group index and its dependence on current and temperature. Theoretical analysis based on the effective index method provides good agreement between the experimental data and numerical calculations. Finally, optical heterodyning spectra

  12. Epitaxial Electronic Oxides on Semiconductors Using Pulsed-Laser Deposition

    SciTech Connect

    Norton, D.P.; Budai, J.D.; Chisholm, M.F.

    1999-12-01

    We describe the growth and properties of epitaxial (OO1) CeO{sub 2} on a (001) Ge surface using a hydrogen-assisted pulsed-laser deposition method. Hydrogen gas is introduced during film growth to eliminate the presence of the GeOs from the semiconductor surface during the initial nucleation of the metal oxide film. The hydrogen partial pressure and substrate temperature are selected to be sufficiently high such that the germanium native oxides are thermodynamically unstable. The Gibbs free energy of CeO{sub 2} is larger in magnitude than that of the Ge native oxides, making it more favorable for the metal oxide to reside at the interface in comparison to the native Ge oxides. By satisfying these criteria. the metal oxide/semiconductor interface is shown to be atomically abrupt with no native oxide present. Preliminary structural and electrical properties are reported.

  13. Nonlinear strain generation in ultrafast laser excited semiconductors

    NASA Astrophysics Data System (ADS)

    Landahl, Eric; Lee, Sooheyong; Williams, G. Jackson; Walko, Donald

    2013-03-01

    We have investigated the laser fluence dependence of the lattice response of Indium Antimonide and Gallium Arsenide crystals to ultrafast laser absorption using time-resolved x-ray diffraction. In both materials, slow thermal cooling follows an initial acoustic strain impulse. For Indium Antimonide, where the laser photon energy is significantly above the band gap, we find that both acoustic and thermal lattice expansions increase linearly with increasing laser fluence. The band gap and photon energy are much closer in Gallium Arsenide, where we find that while the thermal response remains linear with laser fluence, the magnitude of the acoustic impulse is highly nonlinear, exhibiting an initial saturation and recovery far below the laser damage threshold limit. Several hypotheses have been put forward of different nonlinear processes that could lead to this behavior. To place additional constraints on these models, we have recorded high-resolution diffraction lineshapes which can be directly compared to semiconductor strain models incorporating the transport of sound, heat, and charge. To whom correspondence should be addressed.

  14. Circularly symmetric distributed feedback semiconductor laser: An analysis

    SciTech Connect

    Erdogan, T.; Hall, D.G.

    1990-08-15

    We analyze the near-threshold behavior of a circularly symmetric distributed feedback laser by developing a coupled-mode theory analysis for all azimuthal modes. We show that the equations that describes the low-order azimuthal modes are, to a very good approximation, the same as those for the one-dimensional (linear) distributed feedback laser. We examine the behavior of higher-order azimuthal modes by numerically solving the exact coupled-mode equations. We find that while a significant amount of mode discrimination exists among radial (longitudinal) modes, as in the one-dimensional distributed feedback laser, there is a much smaller degree of discrimination among azimuthal modes, indicating probability of multimode operation. Despite the multimode behavior, we find the frequency bandwidth associated with modes that do lase ought to be smaller than the spacing between Fabry-Perot modes of a typical semiconductor laser. This laser is an excellent candidate for a surface-emitting laser-it should have a superb quality output beam and is well-suited for array operation.

  15. Circularly symmetric distributed feedback semiconductor laser: An analysis

    SciTech Connect

    Erdogan, T.; Hall, D.G. )

    1990-08-15

    We analyze the near-threshold behavior of a circularly symmetric distributed feedback laser by developing a coupled-mode theory analysis for all azimuthal modes. We show that the equations that describe the low-order azimuthal modes are, to a very good approximation, the same as those for the one-dimensional (linear) distributed feedback laser. We examine the behavior of higher-order azimuthal modes by numerically solving the exact coupled-mode equations. We find that while a significant amount of mode discrimination exists among radial (longitudinal) modes, as in the one-dimensional distributed feedback laser, there is a much smaller degree of discrimination among azimuthal modes, indicating probability of multimode operation. Despite the multimode behavior, we find that the frequency bandwidth associated with modes that do lase ought to be smaller than the spacing between Fabry-Perot modes of a typical semiconductor laser. This laser is an excellent candidate for a surface-emitting laser---it should have a superb quality output beam and is well-suited for array operation.

  16. Spectral filtering effects in synchronized semiconductor laser networks

    NASA Astrophysics Data System (ADS)

    Argyris, Apostolos; Bourmpos, Michail; Syvridis, Dimitris

    2016-03-01

    Bidirectional coupling of semiconductor lasers (SLs) through optical injection is a well established method to generate chaotic signals which, through their dynamics, may give rise to several applications from sensing to monitoring and from communication to security. Recent works have shown the capability of joint behavior or complete synchrony of mutually coupled networks of SLs. In these works, the coupling architecture, the operational conditions and the properties of the active elements determine the types of dynamics of the emitted optical signals, through which the network can potentially be synchronized. In this experimental work, a network of mutually coupled semiconductor lasers has been synchronized through chaotic optical signals that spectrally extend over 10GHz. The synchronization among the lasers that participate in the coupled network is affected, besides the structural and operational conditions, by the signals' bandwidth that circulates optically. Here we show that the synchronization performance of the detected signals when monitoring the network nodes through optoelectronic conversion is in direct dependence on the signal bandwidth. Smaller signal bandwidth at the GHz range may result in synchronization with cross-correlation values over 0.97 in most of the SL nodes, rejecting higher frequencies that are not optimally synchronized. Another source of improving the synchronization of the network that has been recorded in this experimental setup is by harnessing the de-synchronization events that are almost always apparent, especially when emitted signals include power dropouts.

  17. Tunable excitation of mid-infrared optically pumped semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Olafsen, Linda J.; Kunz, Jeremy; Ongstad, Andrew P.; Kaspi, Ron

    2013-01-01

    While conventional semiconductor lasers employ electrical injection for carrier excitation, optically pumped semiconductor lasers (OPSLs) have demonstrated high output powers and high brightness in the mid-infrared. An important consideration for optically pumped lasers is efficient absorption of the pump beam, which can be achieved through increasing the number of periods in the active region, by placing the active region in a cavity with an optical thickness of twice the pump wavelength between distributed Bragg reflectors (Optical Pumping Injection Cavity), or by periodically inserting the active quantum wells into an InGaAsSb waveguide designed to absorb the pump radiation (Integrated Absorber). A tunable optical pumping technique is utilized by which threshold intensities are minimized and efficiencies are maximized. The near-IR idler output of a Nd:YAG-pumped optical parametric oscillator (10 Hz, ~4 ns) is the tunable optical pumping source in this work. Results are presented for an OPSL with a type-II W active region embedded in an integrated absorber to enhance the absorption of the optical pump beam. Emission wavelengths range from 4.64 μm at 78 K to 4.82 μm at 190 K for optical pump wavelengths ranging from 1930-1950 nm. The effect of wavelength tuning is demonstrated and compared to single wavelength pumping (1940 nm) at a higher duty cycle (20- 30%). Comparisons are also made to other OPSLs, including a discussion of the characteristic temperature and high temperature performance of these devices.

  18. LASER APPLICATIONS AND OTHER TOPICS IN QUANTUM ELECTRONICS: Investigation of single-frequency semiconductor lasers with a fiber Michelson interferometer

    NASA Astrophysics Data System (ADS)

    Belovolov, M. I.; Gur'yanov, A. N.; Gusovskiĭ, D. D.; Dianov, Evgenii M.; Kuznetsov, A. V.; Pencheva, V. Kh; Prokhorov, A. M.

    1987-04-01

    A fiber Michelson interferometer, which is an analog of a scanning Michelson interferometer, was constructed from single-mode fiber waveguides and several highly directional Y-type couplers operating at the wavelength of 0.85 μ. It was found that this interferometer could be used to investigate the coherence of radiation from single-frequency lasers with a spectral line width in the range from 10 kHz to 1 GHz. The experimental dependences of the degree of coherence on the optical path difference were determined for cw single-frequency AlGaAs double heterostructure lasers with an external dispersive resonator, operating in the regime of self-stabilization of single-frequency emission. It was found that the width of the spectral lines was between 10 kHz and 1 MHz, and that the line profiles were Lorentzian.

  19. Gain saturation in semiconductor lasers - Theory and experiment

    NASA Technical Reports Server (NTRS)

    Kasemset, D.; Fonstad, C. G., Jr.

    1982-01-01

    The semiconductor stimulated gain saturation model of Zee has been extended using reasonable approximations to obtain an analytical solution for the gain saturation process in PbSnTe and to determine the limit to single mode power directly from the gain expression, the intraband relaxation time, and device and material parameters. The theoretical results are compared with experimental observations for single transverse mode cavity narrow stripe buried heterostructure PbSnTe lasers. Those results are interpreted in terms of an intraband relaxation time on the order of 2 x 10 to the -12th s in the temperature range 20-80 K.

  20. Asymmetric laser sideband generation with a tapered semiconductor amplifier

    NASA Astrophysics Data System (ADS)

    Yanakas, Michael; Lim, Michael

    2013-03-01

    We have constructed a free-space, frequency-shifted feedback amplifier using a tapered semiconductor gain element. The general layout of the system is similar to that described in Littler, et al., Opt. Comm. 88, 523 (1992). Traveling-wave feedback is demonstrated with the m = - 1 order of several different acousto-optic modulators driven at variable frequency. Asymmetric sideband production is observed in the rf spectrum of a fast photodiode and in the transmission of a scanning Fabry-Perot interferometer. The number of asymmetric modes is controlled with the AOM rf drive power and the seed laser optical power. Supported by NSF PHY-0613659

  1. Bidirectional private key exchange using delay-coupled semiconductor lasers.

    PubMed

    Porte, Xavier; Soriano, Miguel C; Brunner, Daniel; Fischer, Ingo

    2016-06-15

    We experimentally demonstrate a key exchange cryptosystem based on the phenomenon of identical chaos synchronization. In our protocol, the private key is symmetrically generated by the two communicating partners. It is built up from the synchronized bits occurring between two current-modulated bidirectionally coupled semiconductor lasers with additional self-feedback. We analyze the security of the exchanged key and discuss the amplification of its privacy. We demonstrate private key generation rates up to 11  Mbit/s over a public channel. PMID:27304310

  2. An electrically injected rolled-up semiconductor tube laser

    SciTech Connect

    Dastjerdi, M. H. T.; Djavid, M.; Mi, Z.

    2015-01-12

    We have demonstrated electrically injected rolled-up semiconductor tube lasers, which are formed when a coherently strained InGaAs/InGaAsP quantum well heterostructure is selectively released from the underlying InP substrate. The device exhibits strong coherent emission in the wavelength range of ∼1.5 μm. A lasing threshold of ∼1.05 mA is measured for a rolled-up tube with a diameter of ∼5 μm and wall thickness of ∼140 nm at 80 K. The Purcell factor is estimated to be ∼4.3.

  3. DBR-free optically pumped semiconductor disk lasers

    NASA Astrophysics Data System (ADS)

    Yang, Zhou; Albrecht, Alexander R.; Cederberg, Jeffrey G.; Sheik-Bahae, Mansoor

    2015-03-01

    Optically pumped semiconductor disk lasers (SDLs) provide high beam quality with high average-power power at designer wavelengths. However, material choices are limited by the need for a distributed Bragg reflector (DBR), usually monolithically integrated with the active region. We demonstrate DBR-free SDL active regions, which have been lifted off and bonded to various transparent substrates. For an InGaAs multi-quantum well sample bonded to a diamond window heat spreader, we achieved CW lasing with an output power of 2 W at 1150 nm with good beam quality.

  4. Supermode analysis of phase-locked arrays of semiconductor lasers

    NASA Technical Reports Server (NTRS)

    Kapon, E.; Yariv, A.; Katz, J.

    1984-01-01

    The optical characteristics of phase-locked semiconductor laser arrays are formulated in terms of the array supermodes, which are the eigenmodes of the composite-array waveguide, by using coupled-mode theory. These supermodes are employed to calculate the near fields, the far fields, and the difference in the longitudinal-mode oscillation wavelengths of the array. It is shown that the broadening in the far-field beam divergence, as well as the broadening of each of the longitudinal modes that were observed in phase-locked arrays, may arise from the excitation of an increasing number of supermodes at increasing pumping levels.

  5. Coherent Semiconductor Laser Systems For Optical Intersatellite Links

    NASA Astrophysics Data System (ADS)

    Somerset, R. J.; Fletcher, G. D.

    1990-04-01

    Semiconductor laser based optical intersatellite links are attractive for use in both DRS type applications, and as links in the existing satellite-based telecommunications networks (for example between EUTELSAT SMS and INTELSAT IBS business services satellites). Initial ISL experiments will demonstrate direct detection systems using intensity modulation. Coherent systems offer significant improvements over these: the use of frequency shift keying modulation and heterodyne receivers provide significantly improved system sensitivities, which will allow practical systems with reliable laser sources (50 mW CW), and small optical telescopes (20 cm diameter). The SILEX ADD-ON CHANNEL is intended to demonstrate the potential of such systems within the framework of the ESA SILEX program.

  6. Optimization algorithm based characterization scheme for tunable semiconductor lasers.

    PubMed

    Chen, Quanan; Liu, Gonghai; Lu, Qiaoyin; Guo, Weihua

    2016-09-01

    In this paper, an optimization algorithm based characterization scheme for tunable semiconductor lasers is proposed and demonstrated. In the process of optimization, the ratio between the power of the desired frequency and the power except of the desired frequency is used as the figure of merit, which approximately represents the side-mode suppression ratio. In practice, we use tunable optical band-pass and band-stop filters to obtain the power of the desired frequency and the power except of the desired frequency separately. With the assistance of optimization algorithms, such as the particle swarm optimization (PSO) algorithm, we can get stable operation conditions for tunable lasers at designated frequencies directly and efficiently. PMID:27607701

  7. IV-VI semiconductor lasers for gas phase biomarker detection

    NASA Astrophysics Data System (ADS)

    McCann, Patrick; Namjou, Khosrow; Roller, Chad; McMillen, Gina; Kamat, Pratyuma

    2007-09-01

    A promising absorption spectroscopy application for mid-IR lasers is exhaled breath analysis where sensitive, selective, and speedy measurement of small gas phase biomarker molecules can be used to diagnose disease and monitor therapies. Many molecules such as nitric oxide, ethane, formaldehyde, acetaldehyde, acetone, carbonyl sulfide, and carbon disulfide have been connected to diseases or conditions such as asthma, oxidative stress, breast cancer, lung cancer, diabetes, organ transplant rejection, and schizophrenia. Measuring these and other, yet to be discovered, biomarker molecules in exhaled breath with mid-IR lasers offers great potential for improving health care since such tests are non-invasive, real-time, and do not require expensive consumables or chemical reagents. Motivated by these potential benefits, mid-IR laser spectrometers equipped with presently available cryogenically-cooled IV-VI lasers mounted in compact Stirling coolers have been developed for clinical research applications. This paper will begin with a description of the development of mid-IR laser instruments and their use in the largest known exhaled breath clinical study ever performed. It will then shift to a description of recent work on the development of new IV-VI semiconductor quantum well materials and laser fabrication methods that offer the promise of low power consumption (i.e. efficient) continuous wave emission at room temperature. Taken together, the demonstration of compelling clinical applications with large market opportunities and the clear identification of a viable pathway to develop low cost mid-IR laser instrumentation can create a renewed focus for future research and development efforts within the mid-IR materials and devices area.

  8. Clarinet laser: Semiconductor laser design for high-brightness applications

    NASA Astrophysics Data System (ADS)

    Borruel, Luis; Esquivias, Ignacio; Moreno, Pablo; Krakowski, Michel; Auzanneau, Sophie Charlotte; Calligaro, Michel; Parillaud, Olivier; Lecomte, Michel; Sujecki, Slawomir; Wykes, Jim; Larkins, Eric C.

    2005-09-01

    High-power and high-brightness continuous-wave (cw) operation has been achieved with an optimized design of fully index-guided tapered laser emitting at 975 nm. The device achieves simultaneously negligible astigmatism and stable low divergence in the lateral axis at high-power operation. By using a quasi-three-dimensional simulation model, the different mechanisms modifying the slow axis beam divergence at high power have been carefully balanced in the clarinet design, easing the use of collective optics in laser bars. The devices consist of a relatively long ridge-waveguide filtering section coupled to a relatively short tapered section with an aperture angle of 2°. InGaAs /InGaAsP lasers were fabricated with this design, demonstrating an output power of 1 W cw, a maximum wall-plug efficiency of 50%, negligible astigmatism, a slow-axis far-field divergence (measured at 1/e2) of 5° at 1 W and beam quality parameter M2<3.

  9. Intracavity laser spectroscopy with a semiconductor disk laser-pumped cw Cr{sup 2+} : ZnSe laser

    SciTech Connect

    Kozlovsky, V I; Korostelin, Yu V; Podmar'kov, Yu P; Skasyrsky, Ya K; Frolov, M P; Okhotnikov, O G; Akimov, V A

    2013-09-30

    Absorption spectra of the air have been measured near 2.31 μm using intracavity laser spectroscopy with a semiconductor disk laser-pumped cw Cr{sup 2+} : ZnSe laser. It is shown that, at lasing times of at least 3 ms, the sensitivity of the laser to intracavity absorption increases. This allows one to reach an effective path length of 900 km and enables detection of weak lines with absorption coefficients down to 1 × 10{sup -9} cm{sup -1}. (laser spectroscopy)

  10. Photoconductive semiconductor switches: Laser Q-switch trigger and switch-trigger laser integration

    SciTech Connect

    Loubriel, G.M.; Mar, A.; Hamil, R.A.; Zutavern, F.J.; Helgeson, W.D.

    1997-12-01

    This report provides a summary of the Pulser In a Chip 9000-Discretionary LDRD. The program began in January of 1997 and concluded in September of 1997. The over-arching goal of this LDRD is to study whether laser diode triggered photoconductive semiconductor switches (PCSS) can be used to activate electro-optic devices such as Q-switches and Pockels cells and to study possible laser diode/switch integration. The PCSS switches we used were high gain GaAs switches because they can be triggered with small amounts of laser light. The specific goals of the LDRD were to demonstrate: (1) that small laser diode arrays that are potential candidates for laser-switch integration will indeed trigger the PCSS switch, and (2) that high gain GaAs switches can be used to trigger optical Q-switches in lasers such as the lasers to be used in the X-1 Advanced Radiation Source and the laser used for direct optical initiation (DOI) of explosives. The technology developed with this LDRD is now the prime candidate for triggering the Q switch in the multiple lasers in the laser trigger system of the X-1 Advanced Radiation Source and may be utilized in other accelerators. As part of the LDRD we developed a commercial supplier. To study laser/switch integration we tested triggering the high gain GaAs switches with: edge emitting laser diodes, vertical cavity surface emitting lasers (VCSELs), and transverse junction stripe (TJS) lasers. The first two types of lasers (edge emitting and VCSELs) did activate the PCSS but are harder to integrate with the PCSS for a compact package. The US lasers, while easier to integrate with the switch, did not trigger the PCSS at the US laser power levels we used. The PCSS was used to activate the Q-switch of the compact laser to be used in the X-1 Advanced Radiation Source.

  11. Stimulated Brillouin scattering of laser radiation in a piezoelectric semiconductor: Quantum effect

    SciTech Connect

    Uzma, Ch.; Zeba, I.; Shah, H. A.; Salimullah, M.

    2009-01-01

    Using quantum-hydrodynamic model, the phenomenon of the stimulated Brillouin scattering of a laser radiation in an unmagnetized piezoelectric semiconductor has been examined in detail. It is noticed that the Bohm potential in the electron dynamics of the semiconductor plasma enhances drastically the growth rate of the stimulated Brillouin scattering at higher values of the electron number density of the semiconductor plasma and the wave number of the electron-acoustic wave in the semiconductor.

  12. Recent developments in monolithic phase-locked semiconductor laser arrays

    NASA Technical Reports Server (NTRS)

    Katz, J.; Kapon, E.; Margalit, S.; Yariv, A.

    1984-01-01

    Coherent combination of the power of several semiconductor lasers fabricated on the same substrate has been the subject of an intense research effort in recent years, the main motivation being to obtain higher power levels than those available from a single laser in a stable radiation pattern. Best results reported so far include 2.6 watts CW emitted power and less than 1 deg far-field angle (in the array plane) in arrays where all the lasers are electrically connected in parallel. A different type of coherent array, where each element has a separate contact, has been recently demonstrated. While requiring the more complex two-level metallization technology, applying a separate contact to each laser provides an additional degree of freedom in the design and the operation of monolithic arrays. The separate contacts can be employed to tailor the near-field and far-field distributions and to compensate for device-to-device nonuniformities. Furthermore, the control of the currents of the array elements allows the performance of a variety of other functions, such as beam scanning, spectral mode control, wavelength tuning and control of the mutual coherence between array elements.

  13. Recent developments in monolithic phase-locked semiconductor laser arrays

    NASA Technical Reports Server (NTRS)

    Katz, J.; Kapon, E.; Margalit, S.; Yariv, A.

    1984-01-01

    Coherent combination of the power of several semiconductor lasers fabricated on the same substrate has been the subject of an intense research effort in recent years, the main motivation being to obtain higher power levels than those available from a single laser in a stable radiation pattern. Best results reported so far include 2.6 Watts CW emitted power and less than 1 deg far-field angle (in the array plane) in arrays where all the lasers are electrically connected in parallel. A different type of coherent array, where each element has a separate contact, has been recently demonstrated. While requiring the more complex two-level metallization technology, applying a separate contact to each laser provides an additional degree of freedom in the design and the operation of monolithic arrays. The separate contacts can be employed to tailor the near-field and far-field distributions and to compensate for device-to-device nonuniformities. Furthermore, the control of the currents of the array elements allows the performance of a variety of other functions, such as beam scanning, spectral mode control, wavelength tuning and control of the mutual coherence between array elements.

  14. Timing and amplitude jitter in a gain-switched multimode semiconductor laser

    NASA Astrophysics Data System (ADS)

    Wada, Kenji; Kitagawa, Naoaki; Matsukura, Satoru; Matsuyama, Tetsuya; Horinaka, Hiromichi

    2016-04-01

    The differences in timing jitter between a gain-switched single-mode semiconductor laser and a gain-switched multimode semiconductor laser are examined using rate equations that include Langevin noise. The timing jitter in a gain-switched multimode semiconductor laser is found to be effectively suppressed by a decrease in the coherence time of the amplified spontaneous emission (ASE) based on a broad bandwidth of multimode oscillation. Instead, fluctuations in the ASE cause amplitude jitter in the pulse components of the respective modes. A pulse train of gain-switched pulses from a multimode semiconductor laser with timing jitter is equivalently simulated by assuming a high spontaneous emission factor and a short coherence time of the ASE in the single-mode semiconductor laser rate equations.

  15. Effective observation of treatment of chronic pharyngitis with semiconductor laser irradiation at acupuncture points

    NASA Astrophysics Data System (ADS)

    Li, Suxian; Wang, Xiaoyan; Wang, Yanrong

    1993-03-01

    The treatment of this disease with laser such as He-Ne laser, Nd:YAG laser, and CO2 laser, etc., has been applied in our country, but application of the semiconductor laser therapy has received few reports. It has many advantages, such as ting volume, steady function, simple operation (the patient can operate it by himself), no side effects, remarkable results, and it is very convenient. So the semiconductor laser can be used to treat the chronic pharyngitis with irradiation on acupunctural points. One-hundred-twenty chronic pharyngitis patients were divided into 2 groups, a laser group and a medicine group, 60 cases for each. The effective rate is 91.6% and 66.6%, respectively. Obviously the treatment of chronic pharyngitis with semiconductor laser is valuable for widespread use. The principle of the laser therapy is discussed in the last part of this paper.

  16. An optically-triggered semiconductor switch for high power laser beams

    SciTech Connect

    Chow, Weng W.; Warren, M.E.

    1995-04-01

    The work involves research leading to an optically triggered switch for a high power laser pulse. The switch uses a semiconductor heterostructure whose optical properties are modified by a low power laser trigger such as a laser diode. Potential applications include optical control of pulsed power systems, control of medical lasers and implementation of security features in optical warhead architectures.

  17. Web-based interactive educational software introducing semiconductor laser dynamics: Sound of Lasers (SOL)

    NASA Astrophysics Data System (ADS)

    Consoli, Antonio; Sanchez, Jorge R.; Horche, Paloma R.; Esquivias, Ignacio

    2014-07-01

    presented. The proposed tool is addressed to the students of optical communication courses, encouraging self consolidation of the subjects learned in lectures. The semiconductor laser model is based on the well known rate equations for the carrier density, photon density and optical phase. The direct modulation of the laser is considered with input parameters which can be selected by the user. Different options for the waveform, amplitude and frequency of the injected current are available, together with the bias point. Simulation results are plotted for carrier density and output power versus time. Instantaneous frequency variations of the laser output are numerically shifted to the audible frequency range and sent to the computer loudspeakers. This results in an intuitive description of the "chirp" phenomenon due to amplitude-phase coupling, typical of directly modulated semiconductor lasers. In this way, the student can actually listen to the time resolved spectral content of the laser output. By changing the laser parameters and/or the modulation parameters, consequent variation of the laser output can be appreciated in intuitive manner. The proposed educational tool has been previously implemented by the same authors with locally executable software. In the present manuscript, we extend our previous work to a web based platform, offering improved distribution and allowing its use to the wide audience of the web.

  18. Dynamics and Synchronization of Semiconductor Lasers for Chaotic Optical Communications

    NASA Astrophysics Data System (ADS)

    Liu, Jia-Ming; Chen, How-Foo; Tang, Shuo

    The objective of this chapter is to provide a complete picture of the nonlinear dynamics and chaos synchronization of single-mode semiconductor lasers for chaotic optical communications. Basic concepts and theoretical framework are reviewed. Experimental results are presented to demonstrate the fundamental concepts. Numerical computations are employed for mapping the dynamical states and for illustrating certain detailed characteristics of the chaotic states. Three different semiconductor laser systems, namely, the optical injection system, the optical feedback system, and the optoelectronic feedback system, that are of most interest for high-bit-rate chaotic optical communications are considered. The optical injection system is a nonautonomous system that follows a period-doubling route to chaos. The optical feedback system is a phase-sensitive delayed-feedback autonomous system for which all three known routes, namely, period-doubling, quasiperiodicity, and intermittency, to chaos can be found. The optical feedback system is a phase-insensitive delayed-feedback autonomous system that follows a quasiperiodicity route to chaotic pulsing. Identical synchronization in unidirectionally coupled configurations is the focus of discussions for chaotic communications. For optical injection and optical feedback systems, the frequency, phase, and amplitude of the optical fields of both transmitter and receiver lasers are all locked in synchronism when complete synchronization is accomplished. For the optoelectronic feedback system, chaos synchronization involves neither the locking of the optical frequency nor the synchronization of the optical phase. For both optical feedback and optoelectronic feedback systems, where the transmitter is configured with a delayed feedback loop, anticipated and retarded synchronization can be observed as the difference between the feedback delay time and the propagation time from the transmitter laser to the receiver laser is varied. For a

  19. Advanced excimer laser technologies enable green semiconductor manufacturing

    NASA Astrophysics Data System (ADS)

    Fukuda, Hitomi; Yoo, Youngsun; Minegishi, Yuji; Hisanaga, Naoto; Enami, Tatsuo

    2014-03-01

    "Green" has fast become an important and pervasive topic throughout many industries worldwide. Many companies, especially in the manufacturing industries, have taken steps to integrate green initiatives into their high-level corporate strategies. Governments have also been active in implementing various initiatives designed to increase corporate responsibility and accountability towards environmental issues. In the semiconductor manufacturing industry, there are growing concerns over future environmental impact as enormous fabs expand and new generation of equipments become larger and more powerful. To address these concerns, Gigaphoton has implemented various green initiatives for many years under the EcoPhoton™ program. The objective of this program is to drive innovations in technology and services that enable manufacturers to significantly reduce both the financial and environmental "green cost" of laser operations in high-volume manufacturing environment (HVM) - primarily focusing on electricity, gas and heat management costs. One example of such innovation is Gigaphoton's Injection-Lock system, which reduces electricity and gas utilization costs of the laser by up to 50%. Furthermore, to support the industry's transition from 300mm to the next generation 450mm wafers, technologies are being developed to create lasers that offer double the output power from 60W to 120W, but reducing electricity and gas consumption by another 50%. This means that the efficiency of lasers can be improve by up to 4 times in 450mm wafer production environments. Other future innovations include the introduction of totally Heliumfree Excimer lasers that utilize Nitrogen gas as its replacement for optical module purging. This paper discusses these and other innovations by Gigaphoton to enable green manufacturing.

  20. Investigation of communication laser diodes for the SILEX project

    NASA Astrophysics Data System (ADS)

    Menke, Bodo; Loeffler, Roland

    1989-10-01

    The Semiconductor Intersatellite Laser Experiment (SILEX) will construct an optical communications link over a range of 45,000 km, using 0.8-micron AlGaAs laser diodes capable of transmitting 65 Mbit/s. Numerous single-stripe diode types were furnished by manufacturers and subjected to measurements to establish conformity with the required far-field pattern spectrum spread under QPPM-modulation, mode-hopping, astigmatism, and rms wavefront error (WFE); WFE is demonstrated to be strongly affected by the laser window's introduction of strong spherical aberration. Three laser types have been chosen for breadboarding and accelerated life tests.

  1. Transient mode competition in directly modulated DFB semiconductor laser

    NASA Astrophysics Data System (ADS)

    Xiao, RuLei; Shi, YueChun; Zheng, JiLin; Zhang, YunShan; Zheng, JunShou; Chen, XiangFei

    2015-12-01

    A new effect of transient mode competition in directly modulated DFB laser based on equivalent phase-shift (EPS) technique is presented and studied. Since there are multi-order reflections in EPS structure and if the 0th order subgrating is properly designed, the transient lasing of 0th order will occur during the rising time of the injection current. As a result, transient mode competition between -1st order (main mode) and 0th order will occur accordingly. This can consume redundant carrier and suppress the transient relaxation oscillation, which may be applied in some areas like on-off switching modulation of DFB semiconductor lasers. As an example, an equivalent π phase shift (π-EPS) is carefully designed to realize the effect. In such a laser the 0th order wavelength is in the margin of the material gain region and the -1st order wavelength is around the gain peak, while the stable single longitudinal mode (SLM) operation of the -1st order is guaranteed. The simulation investigation is performed. Good results with suppressed relaxation oscillation and 1.25 Gb/s directly on-off modulation (32 dB extinction ratio) are demonstrated. We believe it provides a new kind of method for on-off switching with high extinction ratio and weak relaxation oscillation.

  2. Cluster Generation Under Pulsed Laser Ablation Of Compound Semiconductors

    SciTech Connect

    Bulgakov, Alexander V.; Evtushenko, Anton B.; Shukhov, Yuri G.; Ozerov, Igor; Marine, Wladimir

    2010-10-08

    A comparative experimental study of pulsed laser ablation in vacuum of two binary semiconductors, zinc oxide and indium phosphide, has been performed using IR- and visible laser pulses with particular attention to cluster generation. Neutral and cationic Zn{sub n}O{sub m} and In{sub n}P{sub m} particles of various stoichiometry have been produced and investigated by time-of-flight mass spectrometry. At ZnO ablation, large cationic (n>9) and all neutral clusters are mainly stoichiometric in the ablation plume. In contrast, indium phosphide clusters are strongly indium-rich with In{sub 4}P being a magic cluster. Analysis of the plume composition upon laser exposure has revealed congruent vaporization of ZnO and a disproportionate loss of phosphorus by the irradiated InP surface. Plume expansion conditions under ZnO ablation are shown to be favorable for stoichiometric cluster formation. A delayed vaporization of phosphorus under InP ablation has been observed that results in generation of off-stoichiometric clusters.

  3. Quantum band engineering of nitride semiconductors for infrared lasers

    NASA Astrophysics Data System (ADS)

    Malis, O.; Edmunds, C.; Li, D.; Shao, J.; Gardner, G.; Li, W.; Fay, P.; Manfra, M. J.

    2014-02-01

    The III-nitride semiconductors have been proposed as candidate materials for new quantum cascade lasers in the nearinfrared (1.5-3 μm), and far-infrared (30-60 μm), due to the large conduction-band offset between GaN and Alcontaining alloys (>1 eV), and the large longitudinal optical (LO) phonon energy (90 meV), respectively. The challenges of III-nitride intersubband devices are twofold: material and design related. Due to large electron effective mass, the nitride intersubband materials require the ability to fine-tune the atomic structure at an unprecedented sub-nanometer level. Moreover, the III-N materials exhibit built-in polarization fields that complicate the design of intersubband lasers. This paper presents recent results on c-plane nitride resonant-tunneling diodes that are important for the prospects of farinfrared nitride lasers. We also report near-infrared absorption and photocurrent measurements in nonpolar (m-plane) AlGaN/GaN superlattices.

  4. Laser Stimulated Desorption from Compound Semiconductors, Dimerization Enhanced Phase Transition

    NASA Astrophysics Data System (ADS)

    Namiki, Akira; Cho, Seiji; Ichige, Kenji

    1987-01-01

    Laser stimulated desorption (LSD) of neutral particles has been investigated in compound semiconductors MX of GaN, GaP, GaAs and CdS. No effects of crystallographic orientations on the characteristics of LSD, desorption yields, mean kinetic energies, and speed ratios have been recognized among (111) and (100) orientations in GaP and GaAs. This fact suggests that LSD does not follow the unimolecular dissociation of locally excited surface bonds, but occurs via a bulky event involving a phase transtion. The threshold laser powers for LSD were correlated to the crystal bond ionicities fi, which are good measures for the structural stability of tetrahedral covalent solids. It was found that with increasing fi of the solids, threshold laser powers tend to decrease. The dominant species ejected from MX were found to be in the forms of monomer M and X as well as dimer X2. The ratio of the yields of X2 to those of X increases as the single-bond energy of X2 increases. Considering these experimental results, we propose a model of a non-local electronic excitation mechanism for LSD; namely, LSD occurs via the dimerization enhanced phase transition in a high-density electron-hole plasma.

  5. Microscopic spectral imaging using mid-infrared semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Guo, Bujin-.; Wang, Yi; Peng, Chuan; Luo, Guipeng; Le, Han Q.

    2003-07-01

    Infrared micro-spectroscopy is a useful tool for basic research and biomedical applications. Conventional microspectroscopic imaging apparatuses use thermal sources for sample illumination, which have low brightness, low optical spectral intensity, and high noise. This work evaluates the system engineering advantages of using mid-infrared semiconductor lasers that offer orders-of magnitude higher brightness, spectral intensity, and lower noise. A laser-based microscopic spectral imaging system with focal plane array detectors demonstrated a high signal-to-noise ratio (>20 dB) at video frame rate for a large illuminated area. Microscopic spectral imaging with fixed-wavelength and tunable lasers of 4.6, 6, and 9.3-μm wavelength was applied to a number of representative samples that consist of biological tissues (plant and animal) and solid material (a stack of laminated polymers). Transmission spectral images with ~30-dB dynamic range were obtained with clear evidence of spectral features for different samples. The potential of more advanced systems with a wide coverage of spectral bands is discussed.

  6. Wide Tuning Range Wavelength-Swept Laser With Two Semiconductor Optical Amplifiers

    PubMed Central

    Oh, W. Y.; Yun, S. H.; Tearney, G. J.; Bouma, B. E.

    2010-01-01

    We demonstrate a wide tuning range high-speed wavelength-swept semiconductor laser based on a polygon scanning filter that is common to two laser cavities. Linear wavelength tuning was achieved over 145 nm around 1310 nm at a tuning repetition rate of 20 kHz. The wavelength tuning filter is expandable to accommodate multiple semiconductor optical amplifiers for further widening of the laser wavelength tuning range. PMID:20651947

  7. Semiconductor lasers for versatile applications from global communications to on-chip interconnects

    NASA Astrophysics Data System (ADS)

    Arai, Shigehisa

    2015-01-01

    Since semiconductor lasers were realized in 1962, various efforts have been made to enrich human life thorough novel equipments and services. Among them optical fiber communications in global communications have brought out marvelous information technology age represented by the internet. In this paper, emerging topics made on GaInAsP/InP based long-wavelength lasers toward ultra-low power consumption semiconductor lasers for optical interconnects in supercomputers as well as in future LSIs are presented.

  8. Mode locking of diode- and flashlamp-pumped Nd:YAG lasers using semiconductor saturable absorbers

    NASA Astrophysics Data System (ADS)

    Dombrovsky, Andrej; Kubecek, Vaclav; Zvonicek, K.; Diels, Jean-Claude M.; Stintz, Andreas

    2003-07-01

    Operation of laser diode and flash lamp pumped Nd:YAG lasers mode locked with two different types of semiconductor saturable absorbers is reported. In the first type that is used mainly in diode pumped systems the absorber layers are integrated on highly reflective Bragg mirror. The second type is for use in transmission mode inside the resonator. Different design of semiconductor elements, pumping geometries and resonator configurations were investigated and characteristics of laser operation in mode-locked regime are presented.

  9. Squeezed photon-number noise and sub-Poissonian electrical partition noise in a semiconductor laser

    NASA Technical Reports Server (NTRS)

    Richardson, W. H.; Machida, S.; Yamamoto, Y.

    1991-01-01

    Amplitude noise on the light from a semiconductor laser produced a photocurrent fluctuation spectrum that was a maximum of 85 percent (-8.3 dB) below the shot-noise limit. Squeezing in semiconductor lasers is not limited by the overall quantum, or current transfer, efficiency from the laser injection current to the detector photocurrent. Current leakage away from the lasing junction does not introduce Poissonian partition noise.

  10. Photoconductive Semiconductor Switch Technology for Short Pulse Electromagnetics and Lasers

    SciTech Connect

    Denison, Gary J.; Helgeson, Wesley D.; Hjalmarson, Harold P.; Loubriel, Guillermo M.; Mar, Alan; O'Malley, Martin W.; Zutavern, Fred J.

    1999-08-05

    High gain photoconductive semiconductor switches (PCSS) are being used to produce high power electromagnetic pulses foc (1) compact, repetitive accelerators, (2) ultra-wide band impulse sources, (3) precision gas switch triggers, (4) optically-activated firesets, and (5) high power optical pulse generation and control. High power, sub-nanosecond optical pulses are used for active optical sensors such as compact optical radars and range-gated hallistic imaging systems. Following a brief introduction to high gain PCSS and its general applications, this paper will focus on PCSS for optical pulse generation and control. PCSS technology can be employed in three distinct approaches to optical pulse generation and control: (1) short pulse carrier injection to induce gain-switching in semiconductor lasers, (2) electro-optical Q-switching, and (3) optically activated Q-switching. The most significant PCSS issues for these applications are switch rise time, jitter, and longevity. This paper will describe both the requirements of these applications and the most recent results from PCSS technology. Experiments to understand and expand the limitations of high gain PCSS will also be described.

  11. Solitary and coupled semiconductor ring lasers as optical spiking neurons

    NASA Astrophysics Data System (ADS)

    Coomans, W.; Gelens, L.; Beri, S.; Danckaert, J.; van der Sande, G.

    2011-09-01

    We theoretically investigate the possibility of generating pulses in an excitable (asymmetric) semiconductor ring laser (SRL) using optical trigger pulses. We show that the phase difference between the injected field and the electric field inside the SRL determines the direction of the perturbation in phase space. Due to the folded shape of the excitability threshold, this has an important influence on the ability to cross it. A mechanism for exciting multiple consecutive pulses using a single trigger pulse (i.e., multipulse excitability) is revealed. We furthermore investigate the possibility of using asymmetric SRLs in a coupled configuration, which is a first step toward an all-optical neural network using SRLs as building blocks.

  12. Surface-emitting semiconductor laser for intracavity spectroscopy and microscopy

    SciTech Connect

    Meissner, K.E.; Gourley, P.L.; Brennan, T.M.; Hammons, B.E.; McDonald, A.E.

    1995-03-01

    The authors demonstrate lasing action in a novel microcavity laser which can be utilized for intracavity spectroscopy as well as high contrast imaging of small ({approximately} 10{mu}m) structures. The system can be easily visualized as a Fabry-Perot cavity containing a gain media and an object for study. Since the primary constraint on the object is transparency at the lasing wavelength, investigation of lasing in objects such as microspheres, liquid droplets, and biological cells is possible. The resonator consists of an epitaxial NME grown mirror and gain region on a GaAs wafer. This is essentially an open-cavity vertical cavity surface emitting laser (VCSEL). The object to be studied is placed on the wafer and covered with a glass dielectric mirror which acts as the output coupler. When the semiconductor gain region is photo-pumped, the object within the cavity provides lateral optical confinement through its index difference with the surrounding media, increases the cavity Q, and thus encourages lasing action. The emitted laser light can be spectrally and spatially resolved. The narrow lasing lines can provide information about the lasing modes supported and the size of the object. The spatially resolved laser light provides high contrast microscopic images of the electromagnetic modes oscillating in the resonator. The authors present an investigation of stable lasing modes in polystyrene spheres. This device could prove useful in biomedical diagnostics. It covers the correct spatial dimensions as well as wavelength region. In fact, an integrated system of these devices may provide a high speed, compact method of performing cell diagnostics.

  13. The technology and applications of selective oxidation of AlGaAs

    SciTech Connect

    Choquette, K.D.; Geib, K.M.; Hou, H.Q.; Mathes, D.; Hull, R.

    1998-08-01

    Wet oxidation of AlGaAs alloys, pioneered at the University of Illinois a decade ago, recently has been used to fabricate high performance vertical-cavity surface emitting lasers (VCSELs). The superior properties of oxide-confined VCSELs has stimulated interest in understanding the fundamental of wet oxidation. The authors briefly review the technology of selective oxidation of III-V alloys, including the oxide microstructure and oxidation processing as well as describe its application to selectively oxidized VCSELs.

  14. Improved low-power semiconductor diode lasers for photodynamic therapy in veterinary medicine

    NASA Astrophysics Data System (ADS)

    Lee, Susanne M.; Mueller, Eduard K.; Van de Workeen, Brian C.; Mueller, Otward M.

    2001-05-01

    Cryogenically cooling semiconductor diode lasers provides higher power output, longer device lifetime, and greater monochromaticity. While these effects are well known, such improvements have not been quantified, and thus cryogenically operated semiconductor lasers have not been utilized in photodynamic therapy (PDT). We report quantification of these results from laser power meter and photospectrometer data. The emission wavelengths of these low power multiple quantum well semiconductor lasers were found to decrease and become more monochromatic with decreasing temperature. Significant power output improvements also were obtained at cryogenic temperatures. In addition, the threshold current, i.e. the current at which lasing begins, decreased with decreasing temperature. This lower threshold current combined with the increased power output produced dramatically higher device efficiencies. It is proposed that cryogenic operation of semiconductor diode lasers will reduce the number of devices needed to produce the requisite output for many veterinary and medical applications, permitting significant cost reductions.

  15. Fundamental Limit of 1/f Frequency Noise in Semiconductor Lasers Due to Mechanical Thermal Noise

    NASA Technical Reports Server (NTRS)

    Numata, K.; Camp, J.

    2011-01-01

    So-called 1/f noise has power spectral density inversely proportional to frequency, and is observed in many physical processes. Single longitudinal-mode semiconductor lasers, used in variety of interferometric sensing applications, as well as coherent communications, exhibit 1/f frequency noise at low frequency (typically below 100kHz). Here we evaluate mechanical thermal noise due to mechanical dissipation in semiconductor laser components and give a plausible explanation for the widely-observed 1/f frequency noise, applying a methodology developed for fixed-spacer cavities for laser frequency stabilization. Semiconductor-laser's short cavity, small beam radius, and lossy components are expected to emphasize thermal-noise-limited frequency noise. Our simple model largely explains the different 1/f noise levels observed in various semiconductor lasers, and provides a framework where the noise may be reduced with proper design.

  16. Apparatus For Linewidth Reduction in Distributed Feedback or Distributed Bragg Reflector Semiconductor Lasers Using Vertical Emission

    NASA Technical Reports Server (NTRS)

    Cook, Anthony L. (Inventor); Hendricks, Herbert D. (Inventor)

    2000-01-01

    The linewidth of a distributed feedback semiconductor laser or a distributed Bragg reflector laser having one or more second order gratings is reduced by using an external cavity to couple the vertical emission back into the laser. This method and device prevent disturbance of the main laser beam, provide unobstructed access to laser emission for the formation of the external cavity, and do not require a very narrow heat sink. Any distributed Bragg reflector semiconductor laser or distributed feedback semiconductor laser that can produce a vertical emission through the epitaxial material and through a window in the top metallization can be used. The external cavity can be formed with an optical fiber or with a lens and a mirror or grating.

  17. Comprehensive and fully self-consistent modeling of modern semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Nakwaski, W.; Sarzał, R. P.

    2016-02-01

    The fully self-consistent model of modern semiconductor lasers used to design their advanced structures and to understand more deeply their properties is given in the present paper. Operation of semiconductor lasers depends not only on many optical, electrical, thermal, recombination, and sometimes mechanical phenomena taking place within their volumes but also on numerous mutual interactions between these phenomena. Their experimental investigation is quite complex, mostly because of miniature device sizes. Therefore, the most convenient and exact method to analyze expected laser operation and to determine laser optimal structures for various applications is to examine the details of their performance with the aid of a simulation of laser operation in various considered conditions. Such a simulation of an operation of semiconductor lasers is presented in this paper in a full complexity of all mutual interactions between the above individual physical processes. In particular, the hole-burning effect has been discussed. The impacts on laser performance introduced by oxide apertures (their sizes and localization) have been analyzed in detail. Also, some important details concerning the operation of various types of semiconductor lasers are discussed. The results of some applications of semiconductor lasers are shown for successive laser structures.

  18. Two-Photon-Pumped Perovskite Semiconductor Nanocrystal Lasers.

    PubMed

    Xu, Yanqing; Chen, Qi; Zhang, Chunfeng; Wang, Rui; Wu, Hua; Zhang, Xiaoyu; Xing, Guichuan; Yu, William W; Wang, Xiaoyong; Zhang, Yu; Xiao, Min

    2016-03-23

    Two-photon-pumped lasers have been regarded as a promising strategy to achieve frequency up-conversion for situations where the condition of phase matching required by conventional approaches cannot be fulfilled. However, their practical applications have been hindered by the lack of materials holding both efficient two-photon absorption and ease of achieving population inversion. Here, we show that this challenge can be tackled by employing colloidal nanocrystals of perovskite semiconductors. We observe highly efficient two-photon absorption (with a cross section of 2.7 × 10(6) GM) in toluene solutions of CsPbBr3 nanocrystals that can excite large optical gain (>500 cm(-1)) in thin films. We have succeeded in demonstrating stable two-photon-pumped lasing at a remarkable low threshold by coupling CsPbBr3 nanocrystals with microtubule resonators. Our findings suggest perovskite nanocrystals can be used as excellent gain medium for high-performance frequency-up-conversion lasers toward practical applications. PMID:26938656

  19. Volume Bragg semiconductor lasers with near diffraction limited divergence

    NASA Astrophysics Data System (ADS)

    Venus, George; Glebov, Leonid; Rotar, Vasile; Smirnov, Vadim; Crump, Paul; Farmer, Jason

    2006-05-01

    The problem of high-brightness, narrow line semiconductor lasers sources is important for different kinds of applications. The proposed solution of the problem is the use of an external cavity with volume Bragg grating for effective angular and spectral selection. High-efficient volume Bragg gratings provide complete selection directly in space of wave vectors and serve as a diaphragm in angular space. The condition of effective selection is the provision of a substantial difference in losses for a selected mode by matching angular selectivity of a Bragg grating with divergence of the selected mode. It was proposed off-axis construction of an external cavity with a transmitting volume Bragg grating as an angular selective element and a reflecting volume Bragg grating as a spectral selective feedback. In such external cavity broad area laser diodes have shown stable near-diffraction limited generation in the wide range of pumping current. For LD with 0.5% AR-coated mirror and 150 μm stripe it was achieved 1.7 W output power with divergence of 0.62° at current exceeding six thresholds. Total LD slope efficiency in the considered external cavity is less then slope efficiency of free running diodes by 3-5% only. Spectral width of such locked LD emission was narrowed down to 250 pm in the whole range of pumping current.

  20. Study of the effects of semiconductor laser irradiation on peripheral nerve injury

    NASA Astrophysics Data System (ADS)

    Xiong, G. X.; Li, P.

    2012-11-01

    In order to study to what extent diode laser irradiation effects peripheral nerve injury, the experimental research was made on rabbits. Experimental results show that low-energy semiconductor laser can promote axonal regeneration and improve nervous function. It is also found that simultaneous exposure of the injured peripheral nerve and corresponding spinal segments to laser irradiation may achieve the most significant results.

  1. Highly efficient neodymium:yttrium aluminum garnet laser end pumped by a semiconductor laser array

    NASA Technical Reports Server (NTRS)

    Sipes, D. L.

    1985-01-01

    In recent experiments, 80-mW CW power in a single mode has been achieved from a neodymium:yttrium aluminum garnet (Nd:YAG) laser with only 1 W of electrical power input to a single semiconductor laser array pump. This corresponds to an overall efficiency of 8 percent, the highest reported CW efficiency for a Nd:YAG laser. A tightly focused semiconductor laser end pump configuration is used to achieve high pumping intensities (on the order of 1 kW/sq cm), which in turn causes the photon to photon conversion efficiency to approach the quantum efficiency (76 percent for Nd:YAG at 1.06 microns pumped at 0.810 micron). This is achieved despite the dual-lobed nature of the pump. Through the use of simple beam-combining schemes (e.g., polarization coupling and multireflection point pumping), output powers over 1 W and overall electrical to optical efficiencies as high as 10 percent are expected.

  2. Multi-phonon-assisted absorption and emission in semiconductors and its potential for laser refrigeration

    SciTech Connect

    Khurgin, Jacob B.

    2014-06-02

    Laser cooling of semiconductors has been an elusive goal for many years, and while attempts to cool the narrow gap semiconductors such as GaAs are yet to succeed, recently, net cooling has been attained in a wider gap CdS. This raises the question of whether wider gap semiconductors with higher phonon energies and stronger electron-phonon coupling are better suitable for laser cooling. In this work, we develop a straightforward theory of phonon-assisted absorption and photoluminescence of semiconductors that involves more than one phonon and use to examine wide gap materials, such as GaN and CdS and compare them with GaAs. The results indicate that while strong electron-phonon coupling in both GaN and CdS definitely improves the prospects of laser cooling, large phonon energy in GaN may be a limitation, which makes CdS a better prospect for laser cooling.

  3. The optimal loop gain design for the spectral linewidth reduction in an electrical feedback semiconductor laser

    SciTech Connect

    Li, L. )

    1991-08-01

    In this paper the design rule of the optimal feedback loop gain for the spectral linewidth reduction in a semiconductor laser with electrical feedback is presented using the model of self-heterodyne type electrical feedback. Due to the intensity noise in the feedback signal, there is an optimal value for the feedback loop gain to reduce the spectral linewidth of a semiconductor laser in a given feedback condition.

  4. Carbon nanotube mode-locked optically-pumped semiconductor disk laser.

    PubMed

    Seger, K; Meiser, N; Choi, S Y; Jung, B H; Yeom, D-I; Rotermund, F; Okhotnikov, O; Laurell, F; Pasiskevicius, V

    2013-07-29

    An optically pumped semiconductor disk laser was mode-locked for the first time by employing a single-walled carbon nanotube saturable absorber. Stable passive fundamental mode-locking was obtained at a repetition rate of 613 MHz with a pulse length of 1.23 ps. The mode-locked semiconductor disk laser in a compact geometry delivered a maximum average output power of 136 mW at 1074 nm. PMID:23938653

  5. Tm,Ho:YLF laser end-pumped by a semiconductor diode laser array

    NASA Technical Reports Server (NTRS)

    Hemmati, Hamid (Inventor)

    1990-01-01

    An Ho:YLF crystal including Tm as sensitizers for the activator Ho, is optically pumped with a semiconductor diode laser array to generate 2.1 micron radiation with a pump power to output power of efficiency as high as 68 percent. The prior-art dual sensitizer system of Er and Tm requires cooling, such as by LN2, but by using Tm alone and decreasing the concentrations of Tm and Ho, and decreasing the length of the laser rod to about 1 cm, it has been demonstrated that laser operation can be obtained from a temperature of 77 K with an efficiency as high as 68 percent up to ambient room temperature with an efficiency at that temperature as high as 9 percent.

  6. Emergence of resonant mode-locking via delayed feedback in quantum dot semiconductor lasers.

    PubMed

    Tykalewicz, B; Goulding, D; Hegarty, S P; Huyet, G; Erneux, T; Kelleher, B; Viktorov, E A

    2016-02-22

    With conventional semiconductor lasers undergoing external optical feedback, a chaotic output is typically observed even for moderate levels of the feedback strength. In this paper we examine single mode quantum dot lasers under strong optical feedback conditions and show that an entirely new dynamical regime is found consisting of spontaneous mode-locking via a resonance between the relaxation oscillation frequency and the external cavity repetition rate. Experimental observations are supported by detailed numerical simulations of rate equations appropriate for this laser type. The phenomenon constitutes an entirely new mode-locking mechanism in semiconductor lasers. PMID:26907071

  7. Quantifying Information Flow between Two Chaotic Semiconductor Lasers Using Symbolic Transfer Entropy

    NASA Astrophysics Data System (ADS)

    Li, Nian-Qiang; Pan, Wei; Yan, Lian-Shan; Luo, Bin; Xu, Ming-Feng; Tang, Yi-Long

    2012-03-01

    Symbolic transfer entropy (STE) is employed to quantify the dominant direction of information flow between two chaotic-semiconductor-laser time series. The information flow in unidirectionally and bidirectionally coupled systems was analyzed systematically. Numerical results show that the dependence relationship can be revealed if there exists any coupling between two chaotic semiconductor lasers. More importantly, in both unsynchronized and good synchronization regimes, the STE can be used to quantify the direction of information flow between the lasers, although the former case leads to a better identification. The results thus establish STE as an effective tool for quantifying the direction of information flow between chaotic-laser-based systems.

  8. Irradiation effect of polarization direction and intensity of semiconductor laser on injured peripheral nerve

    NASA Astrophysics Data System (ADS)

    Guo-Xin, Xiong; Lei-lei, Xiong

    2016-08-01

    To investigate the irradiation effect of polarization direction and the intensity of a semiconductor laser on the injured peripheral nerve in rabbits, the model of the injured common peroneal nerve was established, the L5,6 spinal segments of the rabbits were irradiated, a uniform rotating polarizer was placed at the laser output which made the polarization direction and intensity of the output laser change according to the 80 Hz cosine law. The experimental results show that irradiating the spinal segment of injured nerves in rabbits with this changeable semiconductor laser can significantly promote the regeneration of injured peripheral nerves and the function recovery.

  9. What narrow-linewidth semiconductor lasers can do for defense and security?

    NASA Astrophysics Data System (ADS)

    Morin, M.; Ayotte, S.; Latrasse, C.; Aubé, M.; Poulin, M.; Painchaud, Y.; Gagnon, N.; Lafrance, G.

    2010-04-01

    Sensing systems for defense and security operate in evermore demanding environments, increasingly leaving the comfort zone of fiber laser technology. Efficient and rugged laser sources are required that maintain a high level performance under large temperature excursions and sizable vibrations. This paper first presents a sample of defense and security sensing applications requiring laser sources with a narrow emission spectrum. Laser specifications of interest for defense and security sensing applications are reviewed. The effect of the laser frequency noise in interferometric sensing systems is discussed and techniques implemented to reduce phase noise while maintaining the relative intensity noise performance of these sources are reviewed. Developments towards the size reduction of acoustically isolated narrow-linewidth semiconductor lasers are presented. The performance of a narrow-linewidth semiconductor laser subjected to vibrations is characterized. Simulation results of interferometric sensing systems are also presented, taking into account both the intensity and phase noise of the laser.

  10. Photosignal enhancement in Al-GaAs diodes due to surface plasmons and guided wave modes

    NASA Astrophysics Data System (ADS)

    Tamm, I. R.; Dawson, P.; Pate, M. A.; Grey, R.; Hill, G.

    1993-12-01

    In the study, Al-GaAs diodes have been examined in the Otto configuration or prism-air gap sample geometry with a view to producing surface plasmon polaritons (SPP) enhanced photosignals. The investigation is of relevance to polarization selective photodetection and the fabrication of simple polarization sensors. The geometry and the results yielded from it are closely related to SPP mediated spatial light modulators, in which a liquid crystal layer forms the coupling gap between a high index prism and the semiconductor based substrate on which the addressing pixels are fabricated.

  11. Noncontact inspection technique for electrical failures in semiconductor devices using a laser terahertz emission microscope

    NASA Astrophysics Data System (ADS)

    Yamashita, Masatsugu; Otani, Chiko; Kawase, Kodo; Nikawa, Kiyoshi; Tonouchi, Masayoshi

    2008-07-01

    We have proposed and demonstrated a novel technique for the noncontact inspection of electrical failures in semiconductor devices using a laser terahertz emission microscope. It was found that the waveforms of the terahertz pulses, emitted by exciting p-n junctions in semiconductor circuits with focused ultrafast laser pulses, depend on the interconnection structures of the circuits. We successfully distinguished damaged silicon metal-oxide-semiconductor field effect transistor circuits with disconnected wires from normal ones by comparing the images of terahertz emission amplitudes between a normal chip and a defective one.

  12. Incorporating many-body effects into modeling of semiconductor lasers and amplifiers

    SciTech Connect

    Ning, C.Z.; Moloney, J.V.; Indik, R.A.

    1997-06-01

    Major many-body effects that are important for semiconductor laser modeling are summarized. The authors adopt a bottom-up approach to incorporate these many-body effects into a model for semiconductor lasers and amplifiers. The optical susceptibility function ({Chi}) computed from the semiconductor Bloch equations (SBEs) is approximated by a single Lorentzian, or a superposition of a few Lorentzians in the frequency domain. Their approach leads to a set of effective Bloch equations (EBEs). The authors compare this approach with the full microscopic SBEs for the case of pulse propagation. Good agreement between the two is obtained for pulse widths longer than tens of picoseconds.

  13. Techniques for increasing output power from mode-locked semiconductor lasers

    SciTech Connect

    Mar, A.; Vawter, G.A.

    1996-02-01

    Mode-locked semiconductor lasers have drawn considerable attention as compact, reliable, and relatively inexpensive sources of short optical pulses. Advances in the design of such lasers have resulted in vast improvements in pulsewidth and noise performance, at a very wide range of repetition rates. An attractive application for these lasers would be to serve as alternatives for large benchtop laser systems such as dye lasers and solid-state lasers. However, mode-locked semiconductor lasers have not yet approached the performance of such systems in terms of output power. Different techniques for overcoming the problem of low output power from mode-locked semiconductor lasers will be discussed. Flared and arrayed lasers have been used successfully to increase the pulse saturation energy limit by increasing the gain cross section. Further improvements have been achieved by use of the MOPA configuration, which utilizes a flared semiconductor amplifier s amplify pulses to energies of 120 pJ and peak powers of nearly 30W.

  14. Intensity noise reduction in semiconductor lasers by amplitude-phase decorrelation

    NASA Technical Reports Server (NTRS)

    Vahala, Kerry J.; Newkirk, Michael A.

    1990-01-01

    Detuned operation of a laser results in coupling of field amplitude and phase fluctuations. In a semiconductor laser, this coupling is known to be very large. Here it is demonstrated that it can be used to significantly reduce intensity noise below its intrinsic limit.

  15. Parametric distortion of the optical absorption edge of a magnetic semiconductor by a strong laser field

    SciTech Connect

    Nunes, O.A.C.

    1985-09-15

    The influence of a strong laser field on the optical absorption edge of a direct-gap magnetic semiconductor is considered. It is shown that as the strong laser intensity increases the absorption coefficient is modified so as to give rise to an absorption tail below the free-field forbidden gap. An application is made for the case of the EuO.

  16. Narrow linewidth single-mode semiconductor laser development for coherent detection lidar

    NASA Technical Reports Server (NTRS)

    Mansour, Kamjou; Ksendzov, Alexander; Menzies, Robert T.; Maker, Paul D.; Muller, Richard E.; Manfra, M. J.; Turner, George W.

    2003-01-01

    High power, tunable, single mode, narrow linewidth semiconductor lasers in the 2.05-(micro)m wavelength region are needed to develop semiconductor laser reference oscillators for optical remote sensing from Earth orbit. 2.05-I1/4m narrow linewidth monolithic distributed feedback (DFB) and distributed Bragg reflector (DBR) with the external grating ridge waveguide lasers fabricated from epitaxially grown InGaAs/InGaAsP/InP and in InGaAsSb/AlGaAsSb/GaSb heterostructures are reported.

  17. A Hydrodynamic Theory for Spatially Inhomogeneous Semiconductor Lasers: Microscopic Approach

    NASA Technical Reports Server (NTRS)

    Li, Jianzhong; Ning, C. Z.; Biegel, Bryan A. (Technical Monitor)

    2001-01-01

    Starting from the microscopic semiconductor Bloch equations (SBEs) including the Boltzmann transport terms in the distribution function equations for electrons and holes, we derived a closed set of diffusion equations for carrier densities and temperatures with self-consistent coupling to Maxwell's equation and to an effective optical polarization equation. The coherent many-body effects are included within the screened Hartree-Fock approximation, while scatterings are treated within the second Born approximation including both the in- and out-scatterings. Microscopic expressions for electron-hole (e-h) and carrier-LO (c-LO) phonon scatterings are directly used to derive the momentum and energy relaxation rates. These rates expressed as functions of temperatures and densities lead to microscopic expressions for self- and mutual-diffusion coefficients in the coupled density-temperature diffusion equations. Approximations for reducing the general two-component description of the electron-hole plasma (EHP) to a single-component one are discussed. In particular, we show that a special single-component reduction is possible when e-h scattering dominates over c-LO phonon scattering. The ambipolar diffusion approximation is also discussed and we show that the ambipolar diffusion coefficients are independent of e-h scattering, even though the diffusion coefficients of individual components depend sensitively on the e-h scattering rates. Our discussions lead to new perspectives into the roles played in the single-component reduction by the electron-hole correlation in momentum space induced by scatterings and the electron-hole correlation in real space via internal static electrical field. Finally, the theory is completed by coupling the diffusion equations to the lattice temperature equation and to the effective optical polarization which in turn couples to the laser field.

  18. Numerical investigation of ultrahigh frequency polarization self-modulation in semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Loh, W. H.; Tang, Chung L.

    1991-03-01

    Numerical simulations performed show that polarization self-modulation in suitably designed semiconductor lasers into the tens of GHz frequency region should be possible. The calculations are based on a simple model developed to describe polarization self-modulation in a ring laser cavity with a traveling-wave semiconductor laser amplifier as the gain medium. A set of difference-differential equations is derived and numerically solved. Periodic oscillations in the two polarization modes are obtained as previously reported experimentally. An examination of the various parameters and their roles in maintaining this instability is also conducted. The results indicate that, in an appropriately designed semiconductor laser with a monolithically integrated intracavity TE-TM mode converter, ultrahigh frequency polarization self-modulation to at least 50 GHz should be possible.

  19. Modeling of relative intensity noise and terminal electrical noise of semiconductor lasers using artificial neural network

    NASA Astrophysics Data System (ADS)

    Rezaei, A.; Noori, L.

    2016-06-01

    In this paper, artificial neural network (ANN) is used to predict the source laser's relative intensity noise (RIN) and the terminal electrical noise (TEN) of semiconductor lasers. For this purpose, the multi-layer perceptron (MLP) neural network trained with the back propagation algorithm is used. To develop this model, the normalized bias current and frequency are selected as the input parameters and the RIN and TEN of semiconductor lasers are selected as the output parameters. The obtained results show that the proposed ANN model is in a good agreement with the numerical method, and a small error between the predicted values and the numerical solution is obtained. Therefore, the proposed ANN model is a useful, reliable, fast and cheap tool to predict the RIN and TEN of semiconductor lasers.

  20. A study on the optical parts for a semiconductor laser module

    NASA Astrophysics Data System (ADS)

    Oh, Jun-Girl; Lee, Dong-Kil; Kim, Yang-Gyu; Lee, Kwang-Hoon; Park, Young-Sik; Jang, Kwang-Ho; Kang, Seung-Goo

    2014-11-01

    A semiconductor laser module consists of a LD (laser diode) chip that generates a laser beam, two cylindrical lenses to collimate the laser beam, a high-reflection mirror to produce a large output by collecting the laser beam, a collimator lens to guide the laser beam to an optical fiber and a protection filter to block reflected laser light that might damage the LD chip. The cylindrical lenses used in a semiconductor laser module are defined as FACs (fast axis collimators) and SACs (slow axis collimators) and are attached to the system module to control the shape of the laser beam. The FAC lens and the SAC lens are made of a glass material to protect the lenses from thermal deformation. In addition, they have aspheric shapes to improve optical performances. This paper presents a mold core grinding process for an asymmetrical aspheric lens and a GMP (glass molding press), what can be used to make aspheric cylindrical lenses for use as FACs or SACs, and a protection filter made by using IAD (ion-beam-assisted deposition). Finally, we developed the aspheric cylindrical lenses and the protection filter for a 10-W semiconductor laser module.

  1. Semiconductor laser with a birefringent external cavity for information systems with wavelength division multiplexing

    SciTech Connect

    Paranin, V D; Matyunin, S A; Tukmakov, K N

    2013-10-31

    The spectrum of a semiconductor laser with a birefringent external Gires – Tournois cavity is studied. The generation of two main laser modes corresponding to the ordinary and extraordinary wave resonances is found. It is shown that the radiation spectrum is controlled with a high energy efficiency without losses for spectral filtration. The possibility of using two-mode lasing in optical communication systems with wavelength division multiplexing is shown. (control of laser radiation parameters)

  2. Etching of deep grooves for the precise positioning of cleaves in semiconductor lasers

    SciTech Connect

    Bowers, J.E.; Hemenway, B.R.; Wilt, D.P.

    1985-03-01

    Photoelectrochemical etching of InP is used to etch deep (80 ..mu..m), narrow (20 ..mu..m) grooves. The grooves are used to precisely position cleaves in semiconductor lasers and to demonstrate the first wafer processing of long/short cleaved-coupled-cavity (C/sup 3/) lasers. Large numbers of low threshold C/sup 3/ lasers wth very similar cavity lengths were obtained.

  3. Emission properties of surface-emitting distributed-feedback and distributed-Bragg-reflector semiconductor lasers

    SciTech Connect

    Dziura, T. G.; Wang, S. C.

    1989-05-15

    We use a single-mode transfer equation model to study the performance of vertical-cavity surface-emitting distributed-feedback (DFB) and distributed-Bragg-reflector (DBR) semiconductor lasers above threshold. We find that DBR lasers exhibit less envelope spatial hole burning than both single and double phase-shifted DFB lasers and therefore may achieve more stable single-longitudinal-mode operation.

  4. Gain saturation effects in supermodes of phase-locked semiconductor laser arrays

    NASA Technical Reports Server (NTRS)

    Katz, J.; Marshall, W. K.

    1985-01-01

    A basic modal analysis that includes gain saturation effects in phase-locked semiconductor laser arrays is presented. For a particular supermode operation, different lasers in the array emit different amounts of light, and hence their (waveguide) propagation constants are modified differently. Solving the lasers' rate equations self-consistently with the coupled-mode wave equations seems to provide an answer that is in much better agreement with experimental results than the result using only the coupled-mode analysis.

  5. Liquid Phase Chemical Enhanced Oxidation on AlGaAs and Its Application

    NASA Astrophysics Data System (ADS)

    Lee, Kuan-Wei; Wang, Yeong-Her; Houng, Mau-Phon

    2004-07-01

    A new method named the liquid phase chemical enhanced oxidation (LPCEO) technique has been proposed for the oxidation of aluminum gallium arsenide (AlGaAs) near room temperature. The initial stage of AlGaAs oxidation by this method has been investigated. The native oxide film composition is determined on the basis of the results of Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. Based on current-voltage (I-V) characteristics of the metal-oxide-semiconductor (MOS) structure, the leakage current density is approximately 5× 10-9 A/cm2 at the electric field of 1 MV/cm, and the breakdown field is at least 10 MV/cm after rapid temperature annealing. In addition, the oxide film properties can be improved after thermal annealing based on capacitance-voltage (C-V) measurements. Finally, the application of the new method to the AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electronic-mobility transistor (MOS-PHEMT) is demonstrated.

  6. Fabrication and characterization of spherical micro semiconductor crystals by laser ablation method

    NASA Astrophysics Data System (ADS)

    Shimogaki, Tetsuya; Okazaki, Kota; Yamasaki, Kota; Fusazaki, Koshi; Mizokami, Yasuaki; Tetsuyama, Norihiro; Higashihata, Mitsuhiro; Ikenoue, Hiroshi; Nakamura, Daisuke; Okada, Tatsuo

    2014-10-01

    We have been establishing the technique of fabricating spherical semiconductor microcrystals with suitable diameters for whispering gallery mode (WGM) lasing. Concretely, semiconductor microspheres were synthesized by ablating various semiconductor-sintered targets with focused pulsed laser at high fluences. In this report, dependences of fabricated zinc oxide (ZnO) microstructures on laser wavelengths were investigated. Lasing characteristics and photoluminescence of ZnO microspheres were determined, and photoluminescence of Sb-doped ZnO microspheres were determined. Additionally, it was also found that Sb-doped ZnO and aluminum nitride microspheres can be similarly synthesized. By developing this method, which does not require complex processing, it is expected that efforts in the application of WGM lasing are accelerated in many kinds of semiconductors.

  7. Laser interferometric method for determining the carrier diffusion length in semiconductors

    SciTech Connect

    Manukhov, V. V.; Fedortsov, A. B.; Ivanov, A. S.

    2015-09-15

    A new laser interferometric method for measuring the carrier diffusion length in semiconductors is proposed. The method is based on the interference–absorption interaction of two laser radiations in a semiconductor. Injected radiation generates additional carriers in a semiconductor, which causes a change in the material’s optical constants and modulation of the probing radiation passed through the sample. When changing the distance between carrier generation and probing points, a decrease in the carrier concentration, which depends on the diffusion length, is recorded. The diffusion length is determined by comparing the experimental and theoretical dependences of the probe signal on the divergence of the injector and probe beams. The method is successfully tested on semiconductor samples with different thicknesses and surface states and can be used in scientific research and the electronics industry.

  8. 1 W at 785 nm from a frequency-doubled wafer-fused semiconductor disk laser.

    PubMed

    Rantamäki, Antti; Rautiainen, Jussi; Lyytikäinen, Jari; Sirbu, Alexei; Mereuta, Alexandru; Kapon, Eli; Okhotnikov, Oleg G

    2012-04-01

    We demonstrate an optically pumped semiconductor disk laser operating at 1580 nm with 4.6 W of output power, which represents the highest output power reported from this type of laser. 1 W of output power at 785 nm with nearly diffraction-limited beam has been achieved from this laser through intracavity frequency doubling, which offers an attractive alternative to Ti:sapphire lasers and laser diodes in a number of applications, e.g., in spectroscopy, atomic cooling and biophotonics. PMID:22513615

  9. Organic semiconductor lasers as integrated light sources for optical sensor systems

    NASA Astrophysics Data System (ADS)

    Punke, Martin; Woggon, Thomas; Stroisch, Marc; Ebenhoch, Bernd; Geyer, Ulf; Karnutsch, Christian; Gerken, Martina; Lemmer, Uli; Bruendel, Mathias; Wang, Jing; Weimann, Thomas

    2007-09-01

    We demonstrate the feasibility of organic semiconductor lasers as light sources for lab-on-a-chip systems. These lasers are based on a 1D- or 2D-photonic crystal resonator structure providing optical feedback in the active laser material that is deposited on top, e.g. aluminum tris(8-hydroxyquinoline) (Alq 3) doped with the laser dye 4-dicyanomethylene-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran (DCM). We investigated different fabrication methods for the resonator structures, like thermal nanoimprint, UV nanoimprint, and laser interference lithography. Different substrate materials commonly used in lab-on-a-chip systems, e.g. PMMA, Topas, and Ormocer were deployed. By changing the distributed feedback grating periodicity, we demonstrate a tuning range for a single material system of more than 120 nm. The investigated organic semiconductor lasers are optically pumped. External optical pumping provides a feasible way for one-time-use chips. Our recent success of pumping organic lasers with a low-cost laser diode also renders hand-held systems possible. As a further step towards the integration of organic lasers in sensor systems, we demonstrate the coupling of an organic laser into polymeric waveguides which can be combined with microfluidic channels. The integrated organic lasers and the waveguides are both fabricated on the same polished PMMA substrate using thermal nanoimprint lithography and deep-UV modification, respectively. We could demonstrate the guiding of the laser light in single-mode waveguides.

  10. Plasma Heating and Ultrafast Semiconductor Laser Modulation Through a Terahertz Heating Field

    NASA Technical Reports Server (NTRS)

    Li, Jian-Zhong; Ning, C. Z.

    2000-01-01

    Electron-hole plasma heating and ultrafast modulation in a semiconductor laser under a terahertz electrical field are investigated using a set of hydrodynamic equations derived from the semiconductor Bloch equations. The self-consistent treatment of lasing and heating processes leads to the prediction of a strong saturation and degradation of modulation depth even at moderate terahertz field intensity. This saturation places a severe limit to bandwidth achievable with such scheme in ultrafast modulation. Strategies for increasing modulation depth are discussed.

  11. Reference Interferometer Using a Semiconductor Laser/LED Reference Source in a Cryogenic Fourier-Transform Spectrometer

    NASA Technical Reports Server (NTRS)

    Martino, Anthony J.; Cornwell, Donald M.

    1998-01-01

    A combination of a single mode AlGaAs laser diode and broadband LED was used in a Michelson interferometer to provide reference signals in a Fourier transform spectrometer, the Composite Infrared Spectrometer, on the Cassini mission to Saturn. The narrowband light from the laser produced continuous fringes throughout the travel of the interferometer, which were used to control the velocity of the scan mechanism and to trigger data sampling. The broadband light from the LED produced a burst of fringes at zero path difference, which was used as a fixed position reference. The system, including the sources, the interferometer, and the detectors, was designed to work both at room temperature and instrument operating temperature of 170 Kelvin. One major challenge that was overcome was preservation, from room temperature to 170 K, of alignment sufficient for high modulation of fringes from the broadband source. Another was the shift of the source spectra about 30 nm toward shorter wavelengths upon cooldown.

  12. Thermally robust semiconductor optical amplifiers and laser diodes

    DOEpatents

    Dijaili, Sol P.; Patterson, Frank G.; Walker, Jeffrey D.; Deri, Robert J.; Petersen, Holly; Goward, William

    2002-01-01

    A highly heat conductive layer is combined with or placed in the vicinity of the optical waveguide region of active semiconductor components. The thermally conductive layer enhances the conduction of heat away from the active region, which is where the heat is generated in active semiconductor components. This layer is placed so close to the optical region that it must also function as a waveguide and causes the active region to be nearly the same temperature as the ambient or heat sink. However, the semiconductor material itself should be as temperature insensitive as possible and therefore the invention combines a highly thermally conductive dielectric layer with improved semiconductor materials to achieve an overall package that offers improved thermal performance. The highly thermally conductive layer serves two basic functions. First, it provides a lower index material than the semiconductor device so that certain kinds of optical waveguides may be formed, e.g., a ridge waveguide. The second and most important function, as it relates to this invention, is that it provides a significantly higher thermal conductivity than the semiconductor material, which is the principal material in the fabrication of various optoelectronic devices.

  13. Measurement of the emission linewidth of a single-frequency semiconductor laser with a ring fibre interferometer

    SciTech Connect

    Trikshev, A I; Kurkov, Andrei S; Tsvetkov, V B; Pyrkov, Yu N; Paramonov, V N

    2011-07-31

    A simple scanning interferometer is implemented for measuring the emission linewidth of single-frequency semiconductor lasers. The free dispersion region of the interferometer is 28 MHz, the spectral resolution being 470 kHz. (laser spectroscopy)

  14. Line laser lock-in thermography for instantaneous imaging of cracks in semiconductor chips

    NASA Astrophysics Data System (ADS)

    An, Yun-Kyu; Yang, Jinyeol; Hwang, Soonkyu; Sohn, Hoon

    2015-10-01

    This study proposes a new line laser lock-in thermography (LLT) technique for instantaneous inspection of surface cracks in semiconductor chips. First, a new line LLT system is developed by integrating a line scanning laser source, a high-speed infrared (IR) camera with a close-up lens, and a control computer. The proposed line LLT system scans a line laser beam onto a target semiconductor chip surface and measures the corresponding thermal wave propagation using an IR camera. A novel baseline-free crack visualization algorithm is then proposed so that heat blocking phenomena caused by crack formation can be automatically visualized and diagnosed without relying on the baseline data obtained from the pristine condition of a target semiconductor chip. The proposed inspection technique offers the following advantages over the existing semiconductor chip inspection techniques: (1) inspection is performed in a noncontact, nondestructive and nonintrusive manner; (2) the crack diagnosis can be accomplished using only current-state thermal images and thus past thermal images are unnecessary; and (3) crack detectability is significantly enhanced by achieving high spatial resolution for thermal images and removing undesired noise components from the measured thermal images. Validation tests are performed on two different types of semiconductor die chips with real micro-cracks produced during actual fabrication processes. The experiments demonstrate that the proposed line LLT technique can successfully visualize and detect semiconductor chip cracks with width of 28-54 μm.

  15. High-power laser diodes based on InGaAsP alloys

    NASA Astrophysics Data System (ADS)

    Razeghi, Manijeh

    1994-06-01

    HIGH-POWER, high-coherence solid-state lasers, based on dielectric materials such as ruby or Nd:YAG (yttrium aluminium garnet), have many civilian and military applications. The active media in these lasers are insulating, and must therefore be excited (or `pumped') by optical, rather than electrical, means. Conventional gas-discharge lamps can be used as the pumping source, but semiconductor diode lasers are more efficient, as their wavelength can be tailored to match the absorption properties of the lasing material. Semiconducting AlGaAs alloys are widely used for this purpose1, 2, but oxidation of the aluminium and the spreading of defects during device operation limit the lifetime of the diodes3, and hence the reliability of the system as a whole. Aluminium-free InGaAsP compounds, on the other hand, do not have these lifetime-limiting properties4-8. We report here the fabrication of high-power lasers based on InGaAsP (lattice-matched to GaAs substrates), which operate over the same wavelength range as conventional AlGaAs laser diodes and show significantly improved reliability. The other optical and electrical properties of these diodes are either comparable or superior to those of the AlGaAs system.

  16. Conductors, semiconductors, and insulators irradiated with short-wavelength free-electron laser

    NASA Astrophysics Data System (ADS)

    Krzywinski, J.; Sobierajski, R.; Jurek, M.; Nietubyc, R.; Pelka, J. B.; Juha, L.; Bittner, M.; Létal, V.; Vorlíček, V.; Andrejczuk, A.; Feldhaus, J.; Keitel, B.; Saldin, E. L.; Schneidmiller, E. A.; Treusch, R.; Yurkov, M. V.

    2007-02-01

    The results of a study of irreversible changes induced at surfaces of metals, semiconductors, and insulators by extreme ultraviolet (λ<100nm) ultrashort pulses provided by TESLA Test Facility Free-Electron Laser, Phase 1 (TTF1 FEL) are reported and discussed. The laser was tuned at 86, 89, and 98nm during the experiments reported here. Energy spectra of ions ejected from the irradiated surfaces are also reported. Special attention is paid to the difference in the ablation behavior of (semi)conductors and insulators that we have observed. The difference is dramatic, while the absorption coefficients are similar for all materials at the TTF1 FEL wavelength.

  17. Templated growth of II-VI semiconductor optical fiber devices and steps towards infrared fiber lasers

    NASA Astrophysics Data System (ADS)

    Sazio, Pier J. A.; Sparks, Justin R.; He, Rongrui; Krishnamurthi, Mahesh; Fitzgibbons, Thomas C.; Chaudhuri, Subhasis; Baril, Neil F.; Peacock, Anna C.; Healy, Noel; Gopalan, Venkatraman; Badding, John V.

    2015-02-01

    ZnSe and other zinc chalcogenide semiconductor materials can be doped with divalent transition metal ions to create a mid-IR laser gain medium with active function in the wavelength range 2 - 5 microns and potentially beyond using frequency conversion. As a step towards fiberized laser devices, we have manufactured ZnSe semiconductor fiber waveguides with low (less than 1dB/cm at 1550nm) optical losses, as well as more complex ternary alloys with ZnSxSe(1-x) stoichiometry to potentially allow for annular heterostructures with effective and low order mode corecladding waveguiding.

  18. 980-nm 14-pin butterfly module dual-channel CW QW semiconductor laser for pumping

    NASA Astrophysics Data System (ADS)

    Deng, Yun; Yan, Changling; Qu, Yi; Li, Hui; Wang, Yuxia; Gao, Xin; Qiao, Zhongliang; Li, Mei; Qu, Bowen; Lu, Peng; Bo, Baoxue

    2010-10-01

    Nowadays, with its mature progress, the 790 nm - 1000 nm wavelength semiconductor laser is widely used in the fields of laser machining, laser ranging, laser radar, laser imaging, laser anti-counterfeit, biomedical and etc. Best of all, the 980 nm wavelength laser has its widespread application in the pumping source of Er3+ -doped fiber amplifier, optic fiber gyroscopes and other devices. The output wavelength of the fiber amplifier which takes the 980 nm wavelength laser as its pumping source is between 1060 nm and 1550 nm. This type of laser has its extremely wide range of applications in optical communication and other fields. Moreover, some new application domains keep constantly being developed. The semiconductor laser with the dual-channel ridge wave guide and the 980 nm emission wavelength is presented in this paper. In our work, we fabricated Lasers with the using of multi-quantum well (MQW) wafer grew by MBE, and the PL-wavelength of the MQW was 970 nm. The standard photofabrication method and the inductively coupled plasma (ICP) etching technology are adopted in the process of making dual-channel ridge wave guide with the width of 4 μm and height of 830 nm. In the state of continuous work at room temperature, the laser could output the single mode beam of 70 mW stably under the current of 100 mA. The threshold current of the laser diode is 17 mA and the slope efficiency is 0.89 W/A. The 3 dB spectrum bandwidth of the laser beam is 0.2 nm. This laser outputs its beam by a pigtail fiber on which Bragg grating for frequency stabilization is carved. The laser diode, the tail fiber, and the built-in refrigeration and monitoring modules are sealed in a 14-pin butterfly packaging. It can be used directly as the pumping source of Er3+ - doped fiber amplifier or optic fiber gyroscopes.

  19. Diffraction-Coupled, Phase-Locked Semiconductor Laser Array

    NASA Technical Reports Server (NTRS)

    Katz, Joseph; Yariv, Amnon; Margalit, Shlomo

    1988-01-01

    Stable, narrow far field produced. Array of lasers fabricated on single chip. Individual laser waveguides isolated from each other except in end portions, where diffraction coupling takes place. Radiation pattern far from laser array has single, sharp central lobe when all lasers operate in phase with each other. Shape of lobe does not vary appreciably with array current. Applications include recording, printing, and range finding.

  20. Curved grating fabrication techniques for concentric-circle grating, surface-emitting semiconductor lasers

    NASA Technical Reports Server (NTRS)

    Jordan, Rebecca H.; King, Oliver; Wicks, Gary W.; Hall, Dennis G.; Anderson, Erik H.; Rooks, Michael J.

    1993-01-01

    We describe the fabrication and operational characteristics of a novel, surface-emitting semiconductor laser that makes use of a concentric-circle grating to both define its resonant cavity and to provide surface emission. A properly fabricated circular grating causes the laser to operate in radially inward- and outward-going circular waves in the waveguide, thus, introducing the circular symmetry needed for the laser to emit a beam with a circular cross-section. The basic circular-grating-resonator concept can be implemented in any materials system; an AlGaAs/GaAs graded-index, separate confinement heterostructure (GRINSCH), single-quantum-well (SQW) semiconductor laser, grown by molecular beam epitaxy (MBE), was used for the experiments discussed here. Each concentric-circle grating was fabricated on the surface of the AlGaAs/GaAs semiconductor laser. The circular pattern was first defined by electron-beam (e-beam) lithography in a layer of polymethylmethacrylate (PMMA) and subsequently etched into the semiconductor surface using chemically-assisted (chlorine) ion-beam etching (CAIBE). We consider issues that affect the fabrication and quality of the gratings. These issues include grating design requirements, data representation of the grating pattern, and e-beam scan method. We provide examples of how these techniques can be implemented and their impact on the resulting laser performance. A comparison is made of the results obtained using two fundamentally different electron-beam writing systems. Circular gratings with period lambda = 0.25 microns and overall diameters ranging from 80 microns to 500 microns were fabricated. We also report our successful demonstration of an optically pumped, concentric-circle grating, semiconductor laser that emits a beam with a far-field divergence angle that is less than one degree. The emission spectrum is quite narrow (less than 0.1 nm) and is centered at wavelength lambda = 0.8175 microns.

  1. Particle-free semiconductor cutting using the water jet guided laser

    NASA Astrophysics Data System (ADS)

    Perrottet, Delphine; Spiegel, Akos; Wagner, Frank; Housh, Roy; Richerzhagen, Bernold; Manley, John

    2005-04-01

    For many years, wafer cutting has posed a challenge to laser-based cutting techniques because of the brittle nature of semiconductors and the exacting requirements for cleanliness. Since conventional laser cutting generates a strong heat-affected zone and a large amount of particles, abrasive sawing is currently the standard process for semiconductor wafer dicing. However, abrasive sawing can no longer fulfill the demands of new, emerging types of semiconductor devices like those based on thin wafers and compound semiconductors. New separation methods are investigated here. The water jet guided laser is a relatively recent technology that offers not only a significantly reduced heat-affected zone but also a cleaner wafer surface. This is due, first, to the water jet, which cools the material between the laser pulses and removes a significant amount of molten material generated by laser ablation. However, the system has recently been upgraded by adding a device that covers the entire wafer surface with a well-controlled thin water film throughout the cutting process. The few generated particles are thus kept in suspension and will not deposit on the wafer surface.

  2. Drift of Electrons and Atoms in the Laser Radiation Field and Its Influence on the Optical Properties of Semiconductors

    NASA Astrophysics Data System (ADS)

    Krupa, N. N.; Korostil', A. M.; Skirta, Yu. B.

    2005-08-01

    We experimentally study the influence of the laser-induced drift (LID) of dopant electrons and atoms on the optical properties of semiconductors. It is shown that the LID of electrons results in a dramatic change in the refractive index in the region of laser-radiation output from semiconductor crystals, impairement of the total internal reflection in semiconductors, and the occurrence of astigmatism during self-defocusing of the laser radiation in anisotropic semiconductors. This effect influences the breaking of semiconductors by nanosecond and picosecond laser pulses. The LID of dopant atoms, caused by the electrostatic interaction between the ions of these atoms and the space charge of drifting electrons, changes differently the luminescence spectra on the input and output surfaces of crystals and also results in the appearance of a dark spot on the output surface of some ZnSe crystals after irradiation by a continuous-wave CO2 laser.

  3. Fiber optic coupling of a microlens conditioned, stacked semiconductor laser diode array

    DOEpatents

    Beach, Raymond J.; Benett, William J.; Mills, Steven T.

    1997-01-01

    The output radiation from the two-dimensional aperture of a semiconductor laser diode array is efficiently coupled into an optical fiber. The two-dimensional aperture is formed by stacking individual laser diode bars on top of another in a "rack and stack" configuration. Coupling into the fiber is then accomplished using individual microlenses to condition the output radiation of the laser diode bars. A lens that matches the divergence properties and wavefront characteristics of the laser light to the fiber optic is used to focus this conditioned radiation into the fiber.

  4. Fiber optic coupling of a microlens conditioned, stacked semiconductor laser diode array

    DOEpatents

    Beach, R.J.; Benett, W.J.; Mills, S.T.

    1997-04-01

    The output radiation from the two-dimensional aperture of a semiconductor laser diode array is efficiently coupled into an optical fiber. The two-dimensional aperture is formed by stacking individual laser diode bars on top of another in a ``rack and stack`` configuration. Coupling into the fiber is then accomplished using individual microlenses to condition the output radiation of the laser diode bars. A lens that matches the divergence properties and wavefront characteristics of the laser light to the fiber optic is used to focus this conditioned radiation into the fiber. 3 figs.

  5. Design and optimization of a widely tunable semiconductor laser for blood oxygenation and blood flow measurements

    NASA Astrophysics Data System (ADS)

    Feng, Yafei; Deng, Haoyu; Song, Guangyi; He, Jian-Jun

    2014-11-01

    A method for measuring blood oxygenation and blood flow rate using a single widely tunable semiconductor laser is proposed and investigated. It is shown that a 700-nm-band tunable laser gives the highest sensitivity for blood oxygen measurement. The corresponding tunable laser is designed using the V-coupled cavity structure. The wavelength tuning range can reach 8 nm, which is sufficient for the blood oxygenation measurement in the 700-nm-band by using the Beer- Lambert law. In contrast to conventional blood oxygenation measurement method based on two LEDs, the laser can be used at the same time to measure the blood flow rate based on the Doppler principle.

  6. Longitudinal-mode control in integrated semiconductor laser phased arrays by phase velocity matching

    NASA Technical Reports Server (NTRS)

    Kapon, E.; Margalit, S.; Yariv, A.; Katz, J.

    1984-01-01

    The spectrum of semiconductor-laser arrays with separate contacts is investigated. It is demonstrated that the individual laser currents can be selected such that the array operates in a single longitudinal mode, in contrast to the multimode nature of its individual constituents. Moreover, it is possible to tune the lasing frequency by varying the laser currents. Wavelength tuning range of about 50 A, with tuning rate of about 5 A per milliampere, is demonstrated. It is suggested that these spectral features, characteristic of lasers which are coupled in parallel, result from the strong frequency dependence of their spatial mode pattern near the phase-matching frequency of their coupled waveguides.

  7. Rate equations analysis of phase-locked semiconductor laser arrays under steady state conditions

    NASA Technical Reports Server (NTRS)

    Katz, J.; Kapon, E.; Margalit, S.; Yariv, A.

    1984-01-01

    Rate equations analysis of phase-locked semiconductor laser arrays has been carried out. It was found that for given (laser) current densities, the photon density distribution in the array elements is that particular one which maximizes the total photon density. The results of this analysis were then combined with the waveguide properties of the laser array waveguide, yielding a basic model of phase-locked diode laser arrays. This model explains the effects of the variation of the current combination through the array elements on its mode structure that were observed recently.

  8. Coherent instabilities in a semiconductor laser with fast gain recovery

    SciTech Connect

    Wang, Christine Y.; Diehl, L.; Troccoli, M.; Capasso, Federico; Gordon, A.; Jirauschek, C.; Kaertner, F. X.; Belyanin, A.; Bour, D.; Corzine, S.; Hoefler, G.; Faist, J.

    2007-03-15

    We report the observation of a coherent multimode instability in quantum cascade lasers (QCLs), which is driven by the same fundamental mechanism of Rabi oscillations as the elusive Risken-Nummedal-Graham-Haken (RNGH) instability predicted 40 years ago for ring lasers. The threshold of the observed instability is significantly lower than in the original RNGH instability, which we attribute to saturable-absorption nonlinearity in the laser. Coherent effects, which cannot be reproduced by standard laser rate equations, can play therefore a key role in the multimode dynamics of QCLs, and in lasers with fast gain recovery in general.

  9. Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching

    DOEpatents

    Hohimer, J.P.

    1994-06-07

    A high-power broad-area semiconductor laser having a intracavity spatial phase controller is disclosed. The integrated intracavity spatial phase controller is easily formed by patterning an electrical contact metallization layer when fabricating the semiconductor laser. This spatial phase controller changes the normally broad far-field emission beam of such a laser into a single-lobed near-diffraction-limited beam at pulsed output powers of over 400 mW. Two operating modes, a thermal and a gain operating mode, exist for the phase controller, allowing for steering and switching the beam as the modes of operation are switched, and the emission beam may be scanned, for example, over a range of 1.4 degrees or switched by 8 degrees. More than one spatial phase controller may be integrated into the laser structure. 6 figs.

  10. Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching

    DOEpatents

    Hohimer, John P.

    1994-01-01

    A high-power broad-area semiconductor laser having a intracavity spatial phase controller is disclosed. The integrated intracavity spatial phase controller is easily formed by patterning an electrical contact metallization layer when fabricating the semiconductor laser. This spatial phase controller changes the normally broad far-field emission beam of such a laser into a single-lobed near-diffraction-limited beam at pulsed output powers of over 400 mW. Two operating modes, a thermal and a gain operating mode, exist for the phase controller, allowing for steering and switching the beam as the modes of operation are switched, and the emission beam may be scanned, for example, over a range of 1.4 degrees or switched by 8 degrees. More than one spatial phase controller may be integrated into the laser structure.

  11. Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching

    SciTech Connect

    Hohimer, J.P.

    1992-12-31

    A high-power broad-area semiconductor laser having a intracavity spatial phase controller is disclosed. The integrated intracavity spatial phase controller is easily formed by patterning an electrical contact metallization layer when fabricating the semiconductor laser. This spatial phase controller changes the normally broad far-field emission bean, of such a laser into a single-lobed near-diffraction-limited beam at pulsed output powers of over 400 mW. Two operating modes, a thermal and a gain operating mode, exist for the phase controller, allowing for steering and switching the beam as the modes of operation are switched, and the emission beam may be scanned, for example, over a range of 1.4 degrees or switched by 8 degrees. More than one spatial phase controller may be integrated into the laser structure.

  12. Modelocked external-cavity semiconductor laser noise characterization and application to photonic arbitrary waveform generation

    NASA Astrophysics Data System (ADS)

    Yilmaz, Tolga

    There are several applications of low-noise, coherent optical frequency combs generated by modelocked lasers. One application is to use the optical comb source in a photonic arbitrary waveform generator. Performance of electronic arbitrary waveform generators is hindered by the speed and linearity limitations of digital-to-analog converters. These limitations may be overcome by the use of high-bandwidth optical techniques. This thesis investigates the possibility of using actively and hybridly modelocked external-cavity semiconductor lasers to improve upon the speed limitations of electronic arbitrary waveform generators. Pulsetrain noise properties have been studied for different cavity geometries and semiconductor gain medium types. Modelocked laser optical frequency comb stabilization has been achieved and it has made it possible to use the laser in a photonic arbitrary waveform generator architecture. The potential for arbitrary waveform generation and photonic synthesis has been demonstrated by the generated waveforms at microwave frequencies.

  13. Experimental study and chemical application of GaAs semiconductor laser treating trigeminal neuralgia

    NASA Astrophysics Data System (ADS)

    Qiu, Ke-Qum; Cao, Shu-Chen; Wang, Hu-Zhong; Wang, Ke-Ning; Xiao, Ton-Ha; Shen, Ke-Wei

    1993-03-01

    GaAs semiconductor laser was used to treat trigeminal neuralgia with an effective rate of 91.1%, and no side effects were found in 67 cases. Changes in and the recovery of the trigeminal nerve cell were studied with light and electromicroscope. Discussed in this article are the time length and quantity of laser treatment with low power. Experimental study and clinical application of the GaAs semiconductor laser have been carried out in our department since 1987. One-hundred-fifteen patients with various diseases in the maxillofacial region (including 67 cases of trigeminal neuralgia) have been treated with satisfactory effects and without any side-effects. The wavelength of the laser is 904 mu, the largest pulse length is 200 mu, and the average power is 2000 HZ.

  14. Enhancement of the phase-modulation range by using cascaded injection-locked semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Lee, Hwan; Cho, Jun-Hyung; Sung, Hyuk-Kee

    2016-03-01

    The phase modulation of an injection-locked semiconductor laser can be controlled by tuning the injection-locking parameters. However, the phase-modulation range is limited to 180°, which significantly hinders its widespread application. In this study, we investigated the phase-modulation characteristics of a single stage of an injection-locked laser configuration by considering a slave laser's bias control as a tuning parameter. Herein, we propose cascaded injection-locked laser configurations to enhance the phase-modulation range and theoretically demonstrate that the achievable phase-modulation range can be increased. The output of the slave laser is used as the input of the next slave laser to produce an accumulated phase modulation. The results show that a phase modulation of 360° can be achieved using the cascaded configurations; moreover, the number of cascaded configurations required to achieve this range is determined for specific laser parameters.

  15. Advances in optically pumped semiconductor lasers for blue emission under frequency doubling

    NASA Astrophysics Data System (ADS)

    Bai, Yanbo; Wisdom, Jeffrey; Charles, John; Hyland, Patrick; Scholz, Christian; Xu, Zuntu; Lin, Yong; Weiss, Eli; Chilla, Juan; Lepert, Arnaud

    2016-03-01

    Optically pumped semiconductor lasers (OPSL) offer the advantage of excellent beam quality, wavelength agility, and high power scaling capability. In this talk we will present our recent progress of high-power, 920nm OPSLs frequency doubled to 460nm for lightshow applications. Fundamental challenges and mitigations are revealed through electrical, optical, thermal, and mechanical modeling. Results also include beam quality enhancement in addressing the competition from diode lasers.

  16. Optically pumped semiconductor quantum dot disk laser operating at 1180 nm.

    PubMed

    Rautiainen, Jussi; Krestnikov, Igor; Butkus, Mantas; Rafailov, Edik U; Okhotnikov, Oleg G

    2010-03-01

    We demonstrate an optically pumped semiconductor disk laser using 39 layers of Stranski-Krastanov InGaAs quantum dots self-assembled during epitaxial growth on a monolithic GaAs/AlAs distributed Bragg reflector. The gain structure bonded to an intracavity diamond crystal heat spreader allows 1.75 W single-transverse-mode output (M(2)<1.2) with circular beam shape operating at 1180 nm in a disk laser geometry. PMID:20195322

  17. 115 kHz tuning repetition rate ultrahigh-speed wavelength-swept semiconductor laser

    PubMed Central

    Oh, W. Y.; Yun, S. H.; Tearney, G. J.; Bouma, B. E.

    2009-01-01

    We demonstrate an ultrahigh-speed wavelength-swept semiconductor laser using a polygon-based wavelength scanning filter. With a polygon rotational speed of 900 revolutions per second, a continuous wavelength tuning rate of 9200 nm/ms and a tuning repetition rate of 115 kHz were achieved. The wavelength tuning range of the laser was 80 nm centered at 1325 nm, and the average polarized output power was 23 mW. PMID:16350273

  18. Extended-Cavity Semiconductor Wavelength-Swept Laser for Biomedical Imaging

    PubMed Central

    Yun, S. H.; Boudoux, C.; Pierce, M. C.; de Boer, J. F.; Tearney, G. J.; Bouma, B. E.

    2010-01-01

    We demonstrate a compact high-power rapidly swept wavelength tunable laser source based on a semiconductor optical amplifier and an extended-cavity grating filter. The laser produces excellent output characteristics for biomedical imaging, exhibiting >4-mW average output power, <0.06-nm instantaneous linewidth, and >80-dB noise extinction with its center wavelength swept over 100 nm at 1310 nm at variable repetition rates up to 500 Hz. PMID:20640193

  19. Welding of Semiconductor Nanowires by Coupling Laser-Induced Peening and Localized Heating

    PubMed Central

    Rickey, Kelly M.; Nian, Qiong; Zhang, Genqiang; Chen, Liangliang; Suslov, Sergey; Bhat, S. Venkataprasad; Wu, Yue; Cheng, Gary J.; Ruan, Xiulin

    2015-01-01

    We demonstrate that laser peening coupled with sintering of CdTe nanowire films substantially enhances film quality and charge transfer while largely maintaining basic particle morphology. During the laser peening phase, a shockwave is used to compress the film. Laser sintering comprises the second step, where a nanosecond pulse laser beam welds the nanowires. Microstructure, morphology, material content, and electrical conductivities of the films are characterized before and after treatment. The morphology results show that laser peening can decrease porosity and bring nanowires into contact, and pulsed laser heating fuses those contacts. Multiphysics simulations coupling electromagnetic and heat transfer modules demonstrate that during pulsed laser heating, local EM field enhancement is generated specifically around the contact areas between two semiconductor nanowires, indicating localized heating. The characterization results indicate that solely laser peening or sintering can only moderately improve the thin film quality; however, when coupled together as laser peen sintering (LPS), the electrical conductivity enhancement is dramatic. LPS can decrease resistivity up to a factor of ~10,000, resulting in values on the order of ~105 Ω-cm in some cases, which is comparable to CdTe thin films. Our work demonstrates that LPS is an effective processing method to obtain high-quality semiconductor nanocrystal films. PMID:26527570

  20. Welding of Semiconductor Nanowires by Coupling Laser-Induced Peening and Localized Heating.

    PubMed

    Rickey, Kelly M; Nian, Qiong; Zhang, Genqiang; Chen, Liangliang; Suslov, Sergey; Bhat, S Venkataprasad; Wu, Yue; Cheng, Gary J; Ruan, Xiulin

    2015-01-01

    We demonstrate that laser peening coupled with sintering of CdTe nanowire films substantially enhances film quality and charge transfer while largely maintaining basic particle morphology. During the laser peening phase, a shockwave is used to compress the film. Laser sintering comprises the second step, where a nanosecond pulse laser beam welds the nanowires. Microstructure, morphology, material content, and electrical conductivities of the films are characterized before and after treatment. The morphology results show that laser peening can decrease porosity and bring nanowires into contact, and pulsed laser heating fuses those contacts. Multiphysics simulations coupling electromagnetic and heat transfer modules demonstrate that during pulsed laser heating, local EM field enhancement is generated specifically around the contact areas between two semiconductor nanowires, indicating localized heating. The characterization results indicate that solely laser peening or sintering can only moderately improve the thin film quality; however, when coupled together as laser peen sintering (LPS), the electrical conductivity enhancement is dramatic. LPS can decrease resistivity up to a factor of ~10,000, resulting in values on the order of ~10(5) Ω-cm in some cases, which is comparable to CdTe thin films. Our work demonstrates that LPS is an effective processing method to obtain high-quality semiconductor nanocrystal films. PMID:26527570

  1. Intra-cavity frequency-doubled mode-locked semiconductor disk laser at 325 nm.

    PubMed

    Bek, Roman; Baumgärtner, Stefan; Sauter, Fabian; Kahle, Hermann; Schwarzbäck, Thomas; Jetter, Michael; Michler, Peter

    2015-07-27

    We present a passively mode-locked semiconductor disk laser (SDL) emitting at 650nm with intra-cavity second harmonic generation to the ultraviolet (UV) spectral range. Both the gain and the absorber structure contain InP quantum dots (QDs) as active material. In a v-shaped cavity using the semiconductor samples as end mirrors, a beta barium borate (BBO) crystal is placed in front of the semiconductor saturable absorber mirror (SESAM) for pulsed UV laser emission in one of the two outcoupled beams. Autocorrelation (AC) measurements at the fundamental wavelength reveal a FWHM pulse duration of 1.22ps. With a repetition frequency of 836MHz, the average output power is 10mW per beam for the red emission and 0.5mW at 325nm. PMID:26367654

  2. High-power MIXSEL: an integrated ultrafast semiconductor laser with 6.4 W average power.

    PubMed

    Rudin, B; Wittwer, V J; Maas, D J H C; Hoffmann, M; Sieber, O D; Barbarin, Y; Golling, M; Südmeyer, T; Keller, U

    2010-12-20

    High-power ultrafast lasers are important for numerous industrial and scientific applications. Current multi-watt systems, however, are based on relatively complex laser concepts, for example using additional intracavity elements for pulse formation. Moving towards a higher level of integration would reduce complexity, packaging, and manufacturing cost, which are important requirements for mass production. Semiconductor lasers are well established for such applications, and optically-pumped vertical external cavity surface emitting lasers (VECSELs) are most promising for higher power applications, generating the highest power in fundamental transverse mode (>20 W) to date. Ultrashort pulses have been demonstrated using passive modelocking with a semiconductor saturable absorber mirror (SESAM), achieving for example 2.1-W average power, sub-100-fs pulse duration, and 50-GHz pulse repetition rate. Previously the integration of both the gain and absorber elements into a single wafer was demonstrated with the MIXSEL (modelocked integrated external-cavity surface emitting laser) but with limited average output power (<200 mW). We have demonstrated the power scaling concept of the MIXSEL using optimized quantum dot saturable absorbers in an antiresonant structure design combined with an improved thermal management by wafer removal and mounting of the 8-µm thick MIXSEL structure directly onto a CVD-diamond heat spreader. The simple straight cavity with only two components has generated 28-ps pulses at 2.5-GHz repetition rate and an average output power of 6.4 W, which is higher than for any other modelocked semiconductor laser. PMID:21197032

  3. Coupling mechanism of gain-guided integrated semiconductor laser arrays

    NASA Technical Reports Server (NTRS)

    Kapon, E.; Lindsey, C.; Margalit, S.; Yariv, A.; Katz, J.

    1984-01-01

    It is shown that a gain-guided laser array couples via propagating fields rather than the evanescent mode coupling typically responsible for directional coupling in passive (directional couplers) and active (laser array) devices. It is shown that these phase-locked modes exhibit an interference pattern, in the junction plane, which arises from the curvature of the phase fronts of optical fields of the interacting lasers. The experimental results are interpreted with the aid of a simple theoretical model, and the effect of the observed mode pattern on the coupling of gain-guided lasers is discussed.

  4. Laser furnace and method for zone refining of semiconductor wafers

    NASA Technical Reports Server (NTRS)

    Griner, Donald B. (Inventor); zur Burg, Frederick W. (Inventor); Penn, Wayne M. (Inventor)

    1988-01-01

    A method of zone refining a crystal wafer (116 FIG. 1) comprising the steps of focusing a laser beam to a small spot (120) of selectable size on the surface of the crystal wafer (116) to melt a spot on the crystal wafer, scanning the small laser beam spot back and forth across the surface of the crystal wafer (116) at a constant velocity, and moving the scanning laser beam across a predetermined zone of the surface of the crystal wafer (116) in a direction normal to the laser beam scanning direction and at a selectible velocity to melt and refine the entire crystal wafer (116).

  5. Integrated Linewidth Reduction of Rapidly Tunable Semiconductor Lasers

    NASA Astrophysics Data System (ADS)

    Sivananthan, Abirami

    Widely tunable lasers with fast tuning speeds have applications in dense wavelength division multiplexing (DWDM), optical sensing and optical packet switching. In DWDM, tunable lasers can greatly reduce inventory costs, increase manufacturing efficiency, and increase flexibility. For this application, tunable lasers must meet stringent requirements in terms of linewidth, SMSR, RIN, etc. As coherent detection moves to higher modulation formats to increase spectral efficiency, linewidths on the order of 100 kHz will be required. In FMCW LIDAR, the sensing range is directly coupled to the coherence length, i.e. linewidth, of the laser, and the resolution is determined by the tuning range of the laser. A laser with a 40 nm tuning range and 100 kHz linewidth can lead to a LIDAR system with 30 microm of resolution at a 1.5 km range. The above motivations demonstrate the need for a laser that is widely tunable, with tuning speeds in the nanosecond regime, a 100 kHz linewidth and small form factor. Many different approaches have been taken to achieve a low linewidth laser, generally with the trade-off of slower tuning speeds or larger size. Typically, the widely tunable mirrors used to create a highly agile laser are noisy. In our approach we use negative feedback along with an InGaAsP/InP photonic integrated circuit (PIC) to reduce the linewidth of a widely tunable SG-DBR laser. The SG-DBR laser has a 40 nm tuning range, ns tuning speeds and is 1.5 mm long. Typically the linewidth is in the MHz range due to carrier induced frequency fluctuations. We use an asymmetric Mach Zehnder integrated on the same PIC to monitor and convert the laser frequency fluctuations to amplitude fluctuations. This error signal is fed back through a stabilizing loop filter to the phase tuning section of the SG-DBR laser to reduce the laser linewidth. Through integration of all the optical components, the loop delay is minimized and loop bandwidths upwards of 600 MHz have been achieved. Using

  6. Critical slowing down and critical exponents in LD/PIN optically-bistable semiconductor lasers

    SciTech Connect

    Zhong Lichen; Guo Yili

    1988-04-01

    Critical slowing down for LD/PIN bistable optical semiconductor lasers and the critical exponents ..gamma.. for this system have been experimentally investigated. The experimental value ..gamma..approx.0.53 is basically in agreement with the theoretically predicted value of 0.5.

  7. Thermally insensitive determination of the linewidth broadening factor in nanostructured semiconductor lasers using optical injection locking.

    PubMed

    Wang, Cheng; Schires, Kevin; Osiński, Marek; Poole, Philip J; Grillot, Frédéric

    2016-01-01

    In semiconductor lasers, current injection not only provides the optical gain, but also induces variation of the refractive index, as governed by the Kramers-Krönig relation. The linear coupling between the changes of the effective refractive index and the modal gain is described by the linewidth broadening factor, which is responsible for many static and dynamic features of semiconductor lasers. Intensive efforts have been made to characterize this factor in the past three decades. In this paper, we propose a simple, flexible technique for measuring the linewidth broadening factor of semiconductor lasers. It relies on the stable optical injection locking of semiconductor lasers, and the linewidth broadening factor is extracted from the residual side-modes, which are supported by the amplified spontaneous emission. This new technique has great advantages of insensitivity to thermal effects, the bias current, and the choice of injection-locked mode. In addition, it does not require the explicit knowledge of optical injection conditions, including the injection strength and the frequency detuning. The standard deviation of the measurements is less than 15%. PMID:27302301

  8. Determining the cardiovascular pulse waveform using a semiconductor laser autodyne signal

    NASA Astrophysics Data System (ADS)

    Usanov, D. A.; Skripal', A. V.; Kashchavtsev, E. O.

    2013-03-01

    It is shown that a semiconductor laser autodyne signal can be used to reconstruct the pulse waveform in the human radial artery. The pulse waveforms determined using the proposed autodyne system are compared to those obtained by an oscillographic technique using a pneumatic sensor at various pressures in the arm cuff.

  9. Thermally insensitive determination of the linewidth broadening factor in nanostructured semiconductor lasers using optical injection locking

    NASA Astrophysics Data System (ADS)

    Wang, Cheng; Schires, Kevin; Osiński, Marek; Poole, Philip J.; Grillot, Frédéric

    2016-06-01

    In semiconductor lasers, current injection not only provides the optical gain, but also induces variation of the refractive index, as governed by the Kramers-Krönig relation. The linear coupling between the changes of the effective refractive index and the modal gain is described by the linewidth broadening factor, which is responsible for many static and dynamic features of semiconductor lasers. Intensive efforts have been made to characterize this factor in the past three decades. In this paper, we propose a simple, flexible technique for measuring the linewidth broadening factor of semiconductor lasers. It relies on the stable optical injection locking of semiconductor lasers, and the linewidth broadening factor is extracted from the residual side-modes, which are supported by the amplified spontaneous emission. This new technique has great advantages of insensitivity to thermal effects, the bias current, and the choice of injection-locked mode. In addition, it does not require the explicit knowledge of optical injection conditions, including the injection strength and the frequency detuning. The standard deviation of the measurements is less than 15%.

  10. Study of the emission spectra of a 1320-nm semiconductor disk laser and its second harmonic

    NASA Astrophysics Data System (ADS)

    Gochelashvili, K. S.; Derzhavin, S. I.; Evdokimova, O. N.; Zolotovskii, I. O.; Podmazov, S. V.

    2016-03-01

    The spectral characteristics of an optically pumped external-cavity semiconductor disk laser near λ = 1320 nm are studied experimentally. Intracavity second harmonic generation is obtained using an LBO nonlinear crystal. The output power at a wavelength of 660 nm in the cw regime was 620 mW, and the peak power in the pulsed regime was 795 mW.

  11. Thermally insensitive determination of the linewidth broadening factor in nanostructured semiconductor lasers using optical injection locking

    PubMed Central

    Wang, Cheng; Schires, Kevin; Osiński, Marek; Poole, Philip J.; Grillot, Frédéric

    2016-01-01

    In semiconductor lasers, current injection not only provides the optical gain, but also induces variation of the refractive index, as governed by the Kramers-Krönig relation. The linear coupling between the changes of the effective refractive index and the modal gain is described by the linewidth broadening factor, which is responsible for many static and dynamic features of semiconductor lasers. Intensive efforts have been made to characterize this factor in the past three decades. In this paper, we propose a simple, flexible technique for measuring the linewidth broadening factor of semiconductor lasers. It relies on the stable optical injection locking of semiconductor lasers, and the linewidth broadening factor is extracted from the residual side-modes, which are supported by the amplified spontaneous emission. This new technique has great advantages of insensitivity to thermal effects, the bias current, and the choice of injection-locked mode. In addition, it does not require the explicit knowledge of optical injection conditions, including the injection strength and the frequency detuning. The standard deviation of the measurements is less than 15%. PMID:27302301

  12. Polarization of the subthreshold emission and diagnostic of mechanical strain in semiconductor lasers and light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Ptashchenko, Alexander A.; Prokopovich, Ludvig P.; Deych, Michael V.

    1994-10-01

    A measurement system with a rotating polaroid was constructed which allows us to detect the degree of the light polarization ((rho) ) of 0.1%. The dependencies of r were studied on pumping current (I), axial stress ((sigma) ) and temperature (T) for AlGaAs diode lasers (DL), as well as variations of (rho) with the parameters of the detecting system. The validity of the one-dimensional Cassidy's model was argued to describe the polarization phenomena in the active region of DL. The obtained data demonstrate the possibility to evaluate the mechanical strain in the active layer of DL and estimate the difference in reflectivities between transverse electric (TE) and transverse magnetic (TM) modes of the output at varying mechanical strain. The developed experimental system and technique are simple, sensitive and robust enough to be used under the conditions of industrial producing DLs.

  13. High-performance at low cost: the challenge manufacturing frequency doubled green semiconductor lasers for mass markets

    NASA Astrophysics Data System (ADS)

    Hoefer, T.; Schmitt, M.; Schwarz, T.; Kuehnelt, M.; Schulz, R.; Pietzonka, I.; Lindberg, H.; Lauer, C.; Lutgen, S.; Steegmueller, U.; Strauss, U.

    2010-02-01

    Laser projection arising as a new application in the consumer market has been the driving force for OSRAM Opto Semiconductors to develop a frequency doubled semiconductor laser and the production technology necessary to make the complexity of an advanced laser system affordable. Optically pumped frequency doubled semiconductor lasers provide an ideal platform to serve the laser projection application. Based on this scalable technology, we developed a 50 mW green laser comprising all the properties that can be expected from a high performance laser: Excellent beam quality and low noise, high speed modulation, good efficiency and long life time. More than that, the package is very compact (<0.4 cm3) and may be operated passively cooled at up to 60°C. Managing lasing wavelength and controlling phase matching conditions have been major design considerations. We will describe the key characteristics of the green laser, and will also present results from reliability testing and production monitoring.

  14. Semiconductor Laser Line-width Measurements for Space Interferometry Applications

    NASA Technical Reports Server (NTRS)

    Dougherty, D.; Guttierrez, R.; Dubovitsky, S.; Forouhar, S.

    1999-01-01

    This work discusses results using the self-heterodyne delay atechnique to measure 1.3 um InP based DFB lasers. We will also address practical issues concerning detection and elimination of back reflections, choice of fiber length and resolution, and measurement of laser 1/f and current supply noise.

  15. Cost-effective laser interference lithography using a 405 nm AlInGaN semiconductor laser

    NASA Astrophysics Data System (ADS)

    Byun, Ikjoo; Kim, Joonwon

    2010-05-01

    This paper presents a cost-effective interference lithography system that uses a 405 nm AlInGaN semiconductor laser. This method is cost-effective because the AlInGaN semiconductor laser has a long coherence length (~20 m) and low price (e.g. only 1/3 that of the HeCd laser). This system successfully fabricated uniform nano-periodic patterns (line, dot and hole) in a photoresist (PR) over a 2 × 2 cm sample area. The PR patterns agreed well with simulations. Tall silicon nano-structures were fabricated by deep reactive ion etching (DRIE) using a PR pattern as a direct etch mask layer. Aspect ratios of 25 with smooth and vertical sidewalls were achieved after 32 DRIE cycles.

  16. Comparison of the coherence properties of superradiance and laser emission in semiconductor structures

    SciTech Connect

    Vasil'ev, Petr P; Penty, R V; White, I H

    2012-12-31

    The coherence properties of a transient electron - hole state developing during superradiance emission in semiconductor laser structures have been studied experimentally using a Michelson interferometer and Young's classic double-slit configuration. The results demonstrate that, in the lasers studied, the first-order correlation function, which quantifies spatial coherence, approaches unity for superradiant emission and is 0.2 - 0.5 for laser emission. The supercoherence is due to long-range ordering upon the superradiant phase transition. (special issue devoted to the 90th anniversary of n.g. basov)

  17. Experimental study on apoptosis induced by semiconductor laser to hair removal and armpit odor treatment

    NASA Astrophysics Data System (ADS)

    Shi, Hongmin; Yan, Min; Zhang, Meijue

    2005-07-01

    Objective: To observe and explore the effects and mechanism of apoptosis on canine induced by Laser. Try to find a new approach to treat of armpit odor with no traumatism. Method: We used different power of semiconductor Laser to irradiate the black hair canine to observe and evaluate the tissue effects with electroscope, flow cytometry and Tunel technique at different period of time after irradiation. Result: The apoptosis has been observed within the hair follicle cells and apocrine gland cells after irradiation. After repeat irradiation in low power level, more apoptosis has been observed. Conclusion: Apoptosis exists in hair follicle cells and apocrine gland cells after Laser irradiation.

  18. Analytical stability boundaries of an injected two-polarization semiconductor laser.

    PubMed

    Friart, Gaetan; Gavrielides, Athanasios; Erneux, Thomas

    2015-04-01

    The classical problem of a semiconductor laser subject to polarized injection is revisited. From the laser rate equations for the transverse electric (TE) and transverse magnetic (TM) modes, we first determine the steady states. We then investigate their linear stability properties and derive analytical expressions for the steady, saddle-node, and Hopf bifurcation points. We highlight conditions for bistability between pure- and mixed-mode steady states for the laser subject to either TE or TM injection. To our knowledge, the first case has not been documented yet. An important parameter is the ratio of the polarization gain coefficients and we explore its effect on the stability and bifurcation diagrams. PMID:25974573

  19. Relation between chirp and linewidth reduction in external Bragg reflector semiconductor lasers

    SciTech Connect

    Olsson, N.A.; Henry, C.H.; Kazarinov, R.F.; Lee, H.J.; Johnson, B.H.

    1987-07-13

    A 1.5-..mu..m single longitudinal mode semiconductor laser, formed by butt coupling an external Bragg reflector to a standard Fabry--Perot laser, is shown to have greatly reduced wavelength chirp and emission linewidth. The linewidth reduction is found to be proportional to the square of the chirp reduction, in agreement with a previous theoretical prediction. The linewidth and chirp reduction factor can be varied by changing the operating point of the laser. With a 3-mm-long Bragg reflector, a linewidth of 1 MHz at 5 mW has been achieved.

  20. Pulsed-Laser Deposition of Electronic Oxides: Superconductor and Semiconductor Applications

    SciTech Connect

    Norton, D.P.; Park, C.; Lee, Y.E.; Budai, J.D.; Chisholm, M.F.; Verebelyi, D.T.; Christen, D.K.; Kroeger, D.M.

    2000-01-24

    Over the past decade, pulsed-laser deposition (PLD) has proven to be one of the most versatile and effective methods for obtaining high-quality electronic oxide thin-film materials. Much of this success can be attributed to its initial use in depositing high temperature superconducting materials. However, pulsed-laser deposition is now a leading research tool in the development of various electronic oxide thin-film technologies, In this paper, recent progress in the deposition of oxide materials on dissimilar materials for both superconductor and semiconductor applications is discussed. Recent developments in the synthesis of superconducting wires via epitaxial growth of superconducting oxides on biaxially textured metal tapes is described. In addition, efforts to integrate high-k dielectric oxides on semiconductor surfaces using pulsed-laser deposition are highlighted.

  1. Impact of Laser Radiation on Microhardness of a Semiconductor

    SciTech Connect

    Medvid', A.; Onufrijevs, P.; Chiradze, G.; Muktupavela, F.

    2011-12-23

    It was found that strongly absorbed Nd:YAG laser radiation leads to a non-monotonous dependence of microhardness of p- and n-type Si crystals on laser radiation. This dependence is characterized by two maxima for p-Si and one maximum for n-Si crystals. In both cases the increase of microhardness at higher laser intensity is explained by formation of mechanically compressed layer at the irradiated surface due to concentration of the interstitial atoms of Si at the surface in temperature gradient field. The decrease of the microhardness is explained by formation of nano-cones as a result of plastic deformation of the mechanically stressed layer. The additional maximum at lower laser intensity for p-Si crystal is explained by p-n type inversion of Si conductivity.

  2. Investigation of the light field of a semiconductor diode laser.

    PubMed

    Ankudinov, A V; Yanul, M L; Slipchenko, S O; Shelaev, A V; Dorozhkin, P S; Podoskin, A A; Tarasov, I S

    2014-10-20

    Scanning near-field optical microscopy was applied to study, with sub-wavelength spatial resolution, the near- and the far-field distributions of propagating modes from a high-power laser diode. Simple modeling was also performed and compared with experimental results. The simulated distributions were consistent with the experiment and permitted clarification of the configuration of the transverse modes of the laser. PMID:25401675

  3. Incoherent GaAlAs/GaAs semiconductor laser arrays

    NASA Technical Reports Server (NTRS)

    Hwang, C. J.; Chen, J. S.; Fu, R. J.; Wu, D. H.; Wang, C. S.

    1988-01-01

    The fabrication of an incoherent laser array is reported. The main features of the arrays are low threshold index-guided laser elements, single-lobe far-field pattern, low astigmatism, low current operation, dense packing, and total electrical and optical isolation. With further development, this device should have applications in multihead optical-disk reading and writing, multifiber optical communications, and line-of-sight communications.

  4. Static and Dynamic Effects of Lateral Carrier Diffusion in Semiconductor Lasers

    NASA Technical Reports Server (NTRS)

    Li, Jian-Zhong; Cheung, Samson H.; Ning, C. Z.; Biegel, Bryan A. (Technical Monitor)

    2002-01-01

    Electron and hole diffusions in the plane of semiconductor quantum wells play an important part in the static and dynamic operations of semiconductor lasers. It is well known that the value of diffusion coefficients affects the threshold pumping current of a semiconductor laser. At the same time, the strength of carrier diffusion process is expected to affect the modulation bandwidth of an AC-modulated laser. It is important not only to investigate the combined DC and AC effects due to carrier diffusion, but also to separate the AC effects from that of the combined effects in order to provide design insights for high speed modulation. In this presentation, we apply a hydrodynamic model developed by the present authors recently from the semiconductor Bloch equations. The model allows microscopic calculation of the lateral carrier diffusion coefficient, which is a nonlinear function of the carrier density and plasma temperature. We first studied combined AC and DC effects of lateral carrier diffusion by studying the bandwidth dependence on diffusion coefficient at a given DC current under small signal modulation. The results show an increase of modulation bandwidth with decrease in the diffusion coefficient. We simultaneously studied the effects of nonlinearity in the diffusion coefficient. To clearly identify how much of the bandwidth increase is a result of decrease in the threshold pumping current for smaller diffusion coefficient, thus an effective increase of DC pumping, we study the bandwidth dependence on diffusion coefficient at a given relative pumping. A detailed comparison of the two cases will be presented.

  5. Quantum coherence in semiconductor nanostructures for improved lasers and detectors.

    SciTech Connect

    Chow, Weng Wah Dr.; Lyo, Sungkwun Kenneth; Cederberg, Jeffrey George; Modine, Normand Arthur; Biefeld, Robert Malcolm

    2006-02-01

    The potential for implementing quantum coherence in semiconductor self-assembled quantum dots has been investigated theoretically and experimentally. Theoretical modeling suggests that coherent dynamics should be possible in self-assembled quantum dots. Our experimental efforts have optimized InGaAs and InAs self-assembled quantum dots on GaAs for demonstrating coherent phenomena. Optical investigations have indicated the appropriate geometries for observing quantum coherence and the type of experiments for observing quantum coherence have been outlined. The optical investigation targeted electromagnetically induced transparency (EIT) in order to demonstrate an all optical delay line.

  6. Method and Apparatus for Linewidth Reduction in Distributed Feedback or Distributed Bragg Reflector Semiconductor Lasers using Vertical Emission

    NASA Technical Reports Server (NTRS)

    Cook, Anthony L. (Inventor); Hendricks, Herbert D. (Inventor)

    1998-01-01

    The linewidth of a distributed feedback semiconductor laser or a distributed Bragg reflector laser having one or more second order gratings is reduced by using an external cavity to couple the vertical emission back into the laser. This method and device prevent disturbance of the main laser beam. provide unobstructed access to laser emission for the formation of the external cavity. and do not require a very narrow heat sink. Any distributed Bragg reflector semiconductor laser or distributed feedback semiconductor laser that can produce a vertical emission through the epitaxial material and through a window in the top metallization can be used. The external cavity can be formed with an optical fiber or with a lens and a mirror of grating.

  7. Influence of carrier nonuniformity on the phase relationship between frequency and intensity modulation in semiconductor lasers

    SciTech Connect

    Doyle, O.; Gallion, P.B.; Debarge, G.

    1988-03-01

    The chirp to modulated power ratio is an important characteristic of semiconductor laser dynamics and is closely related to the linewidth enhancement factor ..cap alpha... The authors measured the modulus and phase of the CPR for a 1.5 ..mu..m buried heterostructure laser and a 0.85 ..mu..m channeled-substrate planar (CSP) laser. The results for the phase are inconsistent with previously published expressions including spontaneous emission and spectral hole burning. In particular the CSP laser exhibits an abrupt phase shift in the CPR. They present an explanation of this behavior in terms of the influence of a nonuniform carrier density on the phase-amplitude coupling, as expressed by an integral expression for the mode parameter ..cap alpha... Using a simple model for lateral behavior which analytically incorporates diffusion and a nonuniform material ..cap alpha.. parameter, they obtained qualitative agreement with the CSP data. Thus the authors demonstrate the importance of the lateral laser structure on the phase-amplitude coupling in index-guided semiconductor lasers, and the usefulness of CPR phase measurements for laser characterization.

  8. Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate

    DOEpatents

    Mazur, Eric , Shen; Mengyan

    2011-02-08

    The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

  9. Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate

    DOEpatents

    Mazur, Eric; Shen, Mengyan

    2008-10-28

    The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

  10. Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate

    SciTech Connect

    Mazur, Eric; Shen, Mengyan

    2013-12-03

    The present invention generally provides a semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

  11. Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate

    SciTech Connect

    Mazur, Eric; Shen, Mengyan

    2015-09-15

    The present invention generally provides semiconductor substrates having submicronsized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

  12. Microscopic analysis of non-equilibrium dynamics in the semiconductor-laser gain medium

    SciTech Connect

    Hader, J.; Moloney, J. V.; Koch, S. W.

    2014-04-14

    Fully microscopic many-body calculations are used to analyze the carrier dynamics in situations where a strong sub-picosecond pulse interacts with an inverted semiconductor quantum well. Electron-electron and electron-phonon scatterings are calculated on a second Born-Markov level. Intra-subband scatterings on a scale of tens of femtoseconds are shown to quickly re-fill the kinetic holes created in the carrier distributions during the pulse amplification. Even for sub-100 fs pulses, this significantly influences the pulse amplification as well as its spectral dependence. Interband scatterings on a few picosecond timescale limit the possibly achievable repetition rate in pulsed semiconductor lasers.

  13. Phase solitons and domain dynamics in an optically injected semiconductor laser

    NASA Astrophysics Data System (ADS)

    Gustave, F.; Columbo, L.; Tissoni, G.; Brambilla, M.; Prati, F.; Barland, S.

    2016-06-01

    We analyze experimentally and theoretically the spatiotemporal dynamics of a highly multimode semiconductor laser with coherent optical injection. Due to the particular geometry of the device (a 1-m-long ring cavity), the multimode dynamics can be resolved in real time and we observe stable chiral solitons and domain dynamics. The experiment is analyzed in the framework of a set of effective semiconductor Maxwell-Bloch equations. We analyze the stability of stationary solutions and simulate both the complete model and a reduced rate equation model. This allows us to predict domain shrinking and the stability of only one chiral charge that we ascribe to the finite active medium response time.

  14. Excitation density distribution in electron-beam-pumped ZnSe semiconductor lasers

    SciTech Connect

    Donskoi, E N; Zalyalov, A N; Petrushin, O N; Savel'ev, Yu A; Tarasov, M D; Shigaev, Yu S; Zhdanova, E V; Zverev, M M; Peregudov, D V; Ivanov, S V; Sedova, I V; Sorokin, S V

    2008-12-31

    The spatial density distribution of the absorbed energy in ZnSe semiconductor lasers excited by electrons with energies from 2 keV to 1 MeV is calculated by the Monte-Carlo method. Approximate analytic expressions determining the absorbed energy of electrons in ZnSe are presented. The pump power threshold in a semiconductor quantum-well ZnSe structure is experimentally determined. The lasing threshold in such structures is estimated as a function of the electron energy. (active media)

  15. All quantum dot mode-locked semiconductor disk laser emitting at 655 nm

    SciTech Connect

    Bek, R. Kersteen, G.; Kahle, H.; Schwarzbäck, T.; Jetter, M.; Michler, P.

    2014-08-25

    We present a semiconductor disk laser mode-locked by a semiconductor saturable absorber mirror (SESAM) with emission in the red spectral range. Both the gain and the absorber structure are fabricated by metal-organic vapor-phase epitaxy in an anti-resonant design using quantum dots as active material. A v-shaped cavity is used to tightly focus onto the SESAM, producing pulses with a duration of about 1 ps at a repetition rate of 852 MHz.

  16. Optical Frequency Combs From Semiconductor Lasers and Applications in Ultrawideband Signal Processing and Communications

    NASA Astrophysics Data System (ADS)

    Delfyett, Peter J.; Gee, Sangyoun; Choi, Myoung-Taek; Izadpanah, Hossein; Lee, Wangkuen; Ozharar, Sarper; Quinlan, Franklyn; Yilmaz, Tolga

    2006-07-01

    Modelocked semiconductor lasers are used to generate a set of phase-locked optical frequencies on a periodic grid. The periodic and phase coherent nature of the optical frequency combs makes it possible for the realization of high-performance optical and RF arbitrary-waveform synthesis. In addition, the resulting optical frequency components can be used for communication applications relying on direct detection, dense wavelength division multiplexing (WDM), coherent-detection WDM, optical time-division multiplexing, and optical code division multiple access. This paper highlights the recent results in the use of optical frequency combs generated from semiconductors for ultrawideband signal processing and communication applications.

  17. Multiple quantum well AlGaAs nanowires.

    PubMed

    Chen, Chen; Braidy, Nadi; Couteau, Christophe; Fradin, Cécile; Weihs, Gregor; LaPierre, Ray

    2008-02-01

    This letter reports on the growth, structure, and luminescent properties of individual multiple quantum well (MQW) AlGaAs nanowires (NWs). The composition modulations (MQWs) are obtained by alternating the elemental flux of Al and Ga during the molecular beam epitaxy growth of the AlGaAs wire on GaAs (111)B substrates. Transmission electron microscopy and energy dispersive X-ray spectroscopy performed on individual NWs are consistent with a configuration composed of conical segments stacked along the NW axis. Microphotoluminescence measurements and confocal microscopy showed enhanced light emission from the MQW NWs as compared to nonsegmented NWs due to carrier confinement and sidewall passivation. PMID:18184023

  18. Mutually injecting semiconductor lasers: simulations for short and zero delay

    NASA Astrophysics Data System (ADS)

    Korneyev, Nikolay; Radziunas, Mindaugas; Wuensche, Hans J.; Henneberger, Fritz

    2004-09-01

    Distant lasers with mutual optical injection are subject to a delayed coupling. We consider the barely investigated case of delays shorter than the relaxation oscillation period. In order to illuminate the role of these short delays, the ultimate zero-delay limit is considered as a reference. We use a traveling wave equation model, which fully resolves the spatio-temporal distributions of optical fields and carriers in the lasers and treats the wave propagation between the lasers by delayed boundary conditions. Wavelength detuning between the otherwise identical single-mode DFB lasers is used as primary bifurcation parameter. The zero-delay reference exhibits a synchronisation scenario typical for coupled oscillators. The nonsynchronised regimes represents a self-pulsation of the nonlinear carrier-photon system. Additional effects appear when including a short delay. Resonances of the cavity formed by the laser pair cause a staircase dependence on detuning of the pulsation frequency. Irregular dynamics is observed at the borders of the locked regions as well as at the edges of the stairs.

  19. Quantum-well lasers for direct solar photopumping

    NASA Technical Reports Server (NTRS)

    Unnikrishnan, Sreenath; Anderson, Neal G.

    1993-01-01

    Semiconductor lasers directly photopumped by focused sunlight may be viable sources of coherent light for intersatellite communications and other low-power spaceborne applications. In this work, we theoretically explore the possibility of realizing such devices. We specifically assess solar pumped operation of separate-confinement-quantum-well heterostructure (SCQWH) lasers based on InGaAs, GaAs, and AlGaA, as fabrication technology for these lasers is mature and they can operate at very low thresholds. We develop a model for step-index single-well SCQWH lasers photopumped by sunlight, examine how threshold solar photoexcitation intensities depend upon material and structure parameters, design optimum structures for solar-pumped operation, and identify design tradeoffs. Our results suggest that laser action should be possible in properly designed structures at readily achievable solar concentrations and that optimum designs for solar-pumped SCQWH lasers differ significantly from those for analogous current injection devices.

  20. Semiconductor ring lasers with delayed optical feedback: low-frequency fluctuations

    NASA Astrophysics Data System (ADS)

    Van der Sande, Guy; Mashal, Lilia; Nguimdo, Romain Modeste; Cornelles-Soriano, Miguel C.; Danckaert, Jan; Verschaffelt, Guy

    2014-05-01

    Semiconductor lasers subject to external feedback are known to exhibit a wide variety of dynamical regimes desired for some applications such as chaos cryptography, random bit generation, and reservoir computing. Low-frequency fluctuations is one of the most frequently encountered regimes. It is characterized by a fast drop in laser intensity followed by a gradual recovery. The duration of this recovery process is irregular and of the order of hundred nanoseconds. The average time between dropouts is much larger than the laser system characteristic time-scales. Semiconductor ring lasers are currently the focus of a rapidly thriving research activity due to their unique feature of directional bistability. They can be employed in systems for all-optical switching, gating, wavelength-conversion functions, and all-optical memories. Semiconductor ring lasers do not require cleaved facets or gratings for optical feedback and are thus particularly suited for monolithic integration. We experimentally and numerically address the issue of low-frequency fluctuations considering a semiconductor ring laser in a feedback configuration where only one directional mode is re-injected into the same directional mode, a so-called single self-feedback. We have observed that the system is very sensitive to the feedback strength and the injection current. In particular, the power dropouts are more regular when the pump current is increased and become less frequent when the feedback strength is increased. In addition, we find two different recovery processes after the power dropouts of the low-frequency fluctuations. The recovery can either occur via pulses or in a stepwise manner. Since low-frequency fluctuations are not specific to semiconductor ring lasers, we expect these recovery processes to appear also in VCSELs and edge-emitting lasers under similar feedback conditions. The numerical simulations also capture these different behaviors, where the representation in the phase space of

  1. Apertureless scanning microscope probe as a detector of semiconductor laser emission

    SciTech Connect

    Dunaevskiy, Mikhail; Dontsov, Anton; Monakhov, Andrei; Alekseev, Prokhor; Titkov, Alexander; Baranov, Alexei; Girard, Paul; Arinero, Richard; Teissier, Roland

    2015-04-27

    An operating semiconductor laser has been studied using a scanning probe microscope. A shift of the resonance frequency of probe that is due to its heating by laser radiation has been analyzed. The observed shift is proportional to the absorbed radiation and can be used to measure the laser near field or its output power. A periodical dependence of the measured signal has been observed as a function of distance between the probe and the surface of the laser due to the interference of the outgoing and cantilever-reflected waves. Due to the multiple reflections resulting in the interference, the light absorption by the probe cantilever is greatly enhanced compared with a single pass case. Interaction of infrared emission of a diode laser with different probes has been studied.

  2. Message extraction mechanism in optical chaos communications using injection-locked semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Murakami, Atsushi; Shore, K. Alan

    2006-09-01

    In this paper, we employ a simple theory based on driven damped oscillators to clarify the physical basis for message extraction in optical chaos communications using injection-locked semiconductor lasers. The receiver laser is optically driven by injection from the transmitter laser. We have numerically investigated the response characteristics of the receiver when it is driven by periodic (message) and chaotic (carrier) signals. It is thereby revealed that the response of the receiver laser in the two cases is quite different. For the periodic drive, the receiver exhibits a response depending on the signal frequency, while the chaotic drive provides a frequency-independent synchronous response to the receiver laser. CPF can be clearly understood in the difference between the periodic and chaotic drives. Message extraction using CPF is also examined, and the validity of our theoretical explanation for the physical mechanism underlying CPF is thus verified.

  3. Direct laser fabrication of nanowires on semiconductor surfaces

    NASA Astrophysics Data System (ADS)

    Haghizadeh, Anahita; Yang, Haeyeon

    2016-03-01

    Periodic nanowires are observed from (001) orientation of Si and GaAs when the surfaces are irradiated interferentially by high power laser pulses. These nanowires are self-assembled and can be strain-free while their period is consistent with interference period. The nanowire morphologies are studied by atomic force microscopy. The observed period between nanowires depends on the wavelengths used and interference angle. The nanowire width increases with laser intensity. The narrowest nanowires observed have the width smaller than 20 nm, which is more than 10 times smaller than the interference period.

  4. Dynamics of carrier recombination in a semiconductor laser structure

    SciTech Connect

    Dzhioev, R. I. Kavokin, K. V.; Kusrayev, Yu. G.; Poletaev, N. K.

    2015-11-15

    Carrier-recombination dynamics is studied by the method of optical orientation at room temperature in the active layer of a laser diode structure. The dependence of the degree of electron-spin orientation on the excitation density is attributed to saturation of the nonradiative-recombination channel. The time of electron capture at recombination centers is determined to be τ{sub e} = 5 × 10{sup –9} s. The temperature of nonequilibrium electrons heated by a He–Ne laser is estimated.

  5. Interaction of phase and amplitude shaping in an external cavity semiconductor laser

    NASA Astrophysics Data System (ADS)

    Pilny, Rouven H.; Döpke, Benjamin; Balzer, Jan C.; Brenner, Carsten; Klehr, Andreas; Erbert, Götz; Tränkle, Günther; Hofmann, Martin R.

    2016-03-01

    Ultrashort pulse generation with semiconductor lasers poses a promising alternative to currently available femtosecond laser sources like solid state and fiber lasers. Semiconductor devices can be produced inexpensively, are energy efficient and their wavelength can be designed by band gap engineering. Furthermore they feature a tunable repetition rate. Yet pulse duration and peak power of those devices limit their potential for applications so far. However, recent research demonstrated a reduction of the pulse width from 534 fs (full width half maximum) to 216 fs by shaping the spectrally resolved spectral phase and amplitude inside the cavity. The utilized system consisted of a mode-locked edge emitting semiconductor laser diode, a spatial light modulator inside the external cavity to carry out the pulse shaping and an evolutionary algorithm to optimize the phase and amplitude. Here we present the results of separate phase and amplitude shaping as well as their interaction if optimized together at the same time. Furthermore we demonstrate the flexibility of the phase and amplitude shaping with respect to each other. Thus we expect of our system to enable adaptation to a resonator external dispersion.

  6. Hybrid integration of III-V semiconductor lasers on silicon waveguides using optofluidic microbubble manipulation

    PubMed Central

    Jung, Youngho; Shim, Jaeho; Kwon, Kyungmook; You, Jong-Bum; Choi, Kyunghan; Yu, Kyoungsik

    2016-01-01

    Optofluidic manipulation mechanisms have been successfully applied to micro/nano-scale assembly and handling applications in biophysics, electronics, and photonics. Here, we extend the laser-based optofluidic microbubble manipulation technique to achieve hybrid integration of compound semiconductor microdisk lasers on the silicon photonic circuit platform. The microscale compound semiconductor block trapped on the microbubble surface can be precisely assembled on a desired position using photothermocapillary convective flows induced by focused laser beam illumination. Strong light absorption within the micro-scale compound semiconductor object allows real-time and on-demand microbubble generation. After the assembly process, we verify that electromagnetic radiation from the optically-pumped InGaAsP microdisk laser can be efficiently coupled to the single-mode silicon waveguide through vertical evanescent coupling. Our simple and accurate microbubble-based manipulation technique may provide a new pathway for realizing high precision fluidic assembly schemes for heterogeneously integrated photonic/electronic platforms as well as microelectromechanical systems. PMID:27431769

  7. Hybrid integration of III-V semiconductor lasers on silicon waveguides using optofluidic microbubble manipulation.

    PubMed

    Jung, Youngho; Shim, Jaeho; Kwon, Kyungmook; You, Jong-Bum; Choi, Kyunghan; Yu, Kyoungsik

    2016-01-01

    Optofluidic manipulation mechanisms have been successfully applied to micro/nano-scale assembly and handling applications in biophysics, electronics, and photonics. Here, we extend the laser-based optofluidic microbubble manipulation technique to achieve hybrid integration of compound semiconductor microdisk lasers on the silicon photonic circuit platform. The microscale compound semiconductor block trapped on the microbubble surface can be precisely assembled on a desired position using photothermocapillary convective flows induced by focused laser beam illumination. Strong light absorption within the micro-scale compound semiconductor object allows real-time and on-demand microbubble generation. After the assembly process, we verify that electromagnetic radiation from the optically-pumped InGaAsP microdisk laser can be efficiently coupled to the single-mode silicon waveguide through vertical evanescent coupling. Our simple and accurate microbubble-based manipulation technique may provide a new pathway for realizing high precision fluidic assembly schemes for heterogeneously integrated photonic/electronic platforms as well as microelectromechanical systems. PMID:27431769

  8. Hybrid integration of III-V semiconductor lasers on silicon waveguides using optofluidic microbubble manipulation

    NASA Astrophysics Data System (ADS)

    Jung, Youngho; Shim, Jaeho; Kwon, Kyungmook; You, Jong-Bum; Choi, Kyunghan; Yu, Kyoungsik

    2016-07-01

    Optofluidic manipulation mechanisms have been successfully applied to micro/nano-scale assembly and handling applications in biophysics, electronics, and photonics. Here, we extend the laser-based optofluidic microbubble manipulation technique to achieve hybrid integration of compound semiconductor microdisk lasers on the silicon photonic circuit platform. The microscale compound semiconductor block trapped on the microbubble surface can be precisely assembled on a desired position using photothermocapillary convective flows induced by focused laser beam illumination. Strong light absorption within the micro-scale compound semiconductor object allows real-time and on-demand microbubble generation. After the assembly process, we verify that electromagnetic radiation from the optically-pumped InGaAsP microdisk laser can be efficiently coupled to the single-mode silicon waveguide through vertical evanescent coupling. Our simple and accurate microbubble-based manipulation technique may provide a new pathway for realizing high precision fluidic assembly schemes for heterogeneously integrated photonic/electronic platforms as well as microelectromechanical systems.

  9. Power scalable semiconductor disk lasers for frequency conversion and mode-locking

    SciTech Connect

    Okhotnikov, O G

    2008-12-31

    The semiconductor disk laser, a relatively novel type of light oscillators, is now under intensive development. These lasers produce an excellent beam quality in conjunction with a scalable output power. This paper presents recent achievements in power scalability, mode-locking and frequency conversion with optically-pumped semiconductor disk lasers. A novel concept for power scaling described here allows the thermal load of the gain material to be reduced, increasing the threshold of rollover and extending the capability for boosting the output power without degradation in the beam quality. The proposed technique is based on the multiple gain scheme. The total power of over 8 W was achieved in dual-gain configuration, while one-gain lasers could produce separately up to 4 W, limited by the thermal rollover of the output characteristics. The results show that the reduced thermal load to a gain element in a dual-gain cavity allows extending the range of usable pump powers boosting the laser output. Orange-red radiation required for a number of challenging applications can be produced through frequency-doubling using a GaInNAs/GaAs laser. Using such a disk laser operating at a fundamental wavelength of 1224 nm, we demonstrate an output power of 2.68 W in the visible region with an optical-to-optical conversion efficiency of 7.4%. The frequency-converted signal could be launched into a single-mode optical fibre with 70%-78% coupling efficiency, demonstrating good beam quality for the visible radiation. Using a Fabry-Perot glass etalon, the emission wavelength could be tuned over an 8-nm spectral range. We report on optically-pumped disk lasers passively mode-locked with a semiconductor saturable-absorber mirror. The potential of harmonic mode-locking in producing pulse trains at multigigahertz repetition rates has been explored. The mode-locked disk laser is investigated for different designs of the gain medium that allow bistable mode-locking to be controlled. An

  10. High-speed modelocked semiconductor lasers and applications in coherent photonic systems

    NASA Astrophysics Data System (ADS)

    Lee, Wangkuen

    1.55-mum high-speed modelocked semiconductor lasers are theoretically and experimentally studied for various coherent photonic system applications. The modelocked semiconductor lasers (MSLs) are designed with high-speed (>5 GHz) external cavity configurations utilizing monolithic two-section curved semiconductor optical amplifiers. By exploiting the saturable absorber section of the monolithic device, passive or hybrid mode-locking techniques are used to generate short optical pulses with broadband optical frequency combs. Laser frequency stability is improved by applying the Pound-Drever-Hall (PDH) frequency stabilization technique to the MSLs. The improved laser performance after the frequency stabilization (a frequency drifting of less than 350 MHz), is extensively studied with respect to the laser linewidth (˜ 3 MHz), the relative intensity noise (RIN) (< -150 dB/Hz), as well as the modal RIN (˜ 3 dB reduction). MSL to MSL, and tunable laser to MSL synchronization is demonstrated by using a dual-mode injection technique and a modulation sideband injection technique, respectively. Dynamic locking behavior and locking bandwidth are experimentally and theoretically studied. Stable laser synchronization between two MSLs is demonstrated with an injection seed power on the order of a few microwatt. Several coherent heterodyne detections based on the synchronized MSL systems are demonstrated for applications in microwave photonic links and ultra-dense wavelength division multiplexing (UD-WDM) system. In addition, efficient coherent homodyne balanced receivers based on synchronized MSLs are developed and demonstrated for a spectrally phase-encoded optical CDMA (SPE-OCDMA) system.

  11. Pulsed laser ablation growth and doping of epitaxial compound semiconductor films

    SciTech Connect

    Lowndes, D.H.; Rouleau, C.M.; Geohegan, D.B.; Budai, J.D.; Poker, D.B.; Puretzky, A.A.; Strauss, M.A.; Pedraza, A.J.; Park, J.W.

    1995-12-01

    Pulsed laser ablation (PLA) has several characteristics that are potentially attractive for the growth and doping of chemically complex compound semiconductors including (1) stoichiometric (congruent) transfer of composition from target to film, (2) the use of reactive gases to control film composition and/or doping via energetic-beam-induced reactions, and (3) low-temperature nonequilibrium phase formation in the laser-generated plasma ``plume.`` However, the electrical properties of compound semiconductors are far more sensitive to low concentrations of defects than are the oxide metals/ceramics for which PLA has been so successful. Only recently have doped epitaxial compound semiconductor films been grown by PLA. Fundamental studies are being carried out to relate film electrical and microstructural properties to the energy distribution of ablated species, to the temporal evolution of the ablation pulse in ambient gases, and to beam assisted surface and/or gas-phase reactions. In this paper the authors describe results of ex situ Hall effect, high-resolution x-ray diffraction, transmission electron microscopy, and Rutherford backscattering measurements that are being used in combination with in situ RHEED and time-resolved ion probe measurements to evaluate PLA for growth of doped epitaxial compound semiconductor films and heterostructures. Examples are presented and results analyzed for doped II-VI, I-III-VI, and column-III nitride materials grown recently in this and other laboratories.

  12. Wet Oxidation of High-Al-Content III-V Semiconductors: Important Materials Considerations for Device Applications

    SciTech Connect

    Ashby, Carol I.H.

    1999-05-19

    Wet oxidation of high-Al-content AIGaAs semiconductor layers in vertical cavity surface emitting lasers (VCSELS) has produced devices with record low threshold currents and voltages and with wall-plug efficiencies greater than 50%. Wet oxidation of buried AlGaAs layers has been employed to reduce the problems associated with substrate current leakage in GaAs-on- insulator (GOI) MESFETS. Wet oxidation of high-Al-content AlGaAs semiconductor layers in vertical cavity surface emitting lasers (VCSELS) has produced devices with record low threshold currents and voltages and with wall-plug efficiencies greater than 50%. Wet oxidation of buried AlGaAs layers has been employed to reduce the problems associated with substrate current leakage in GaAs-on- insulator (GOI) MESFETS. Wet oxidation has also been considered as a route to the long-sought goal of a IH-V MIS technology. To continue improving device designs for even higher performance and to establish a truly manufacturable technology based on wet oxidation, the effect of oxidation of a given layer on the properties of the entire device structure must be understood. The oxidation of a given layer can strongly affect the electrical and chemical properties of adjacent layers. Many of these effects are derived from the production of large amounts of elemental As during the oxidation reaction, the resultant generation of point defects, and the diffusion of these defects into adjacent regions. This can modify the chemical and electrical properties of these regions in ways that can impact device design, fabrication, and performance. Current understanding of the problem is discussed here.

  13. Relative Refractory Period in an Excitable Semiconductor Laser

    NASA Astrophysics Data System (ADS)

    Selmi, F.; Braive, R.; Beaudoin, G.; Sagnes, I.; Kuszelewicz, R.; Barbay, S.

    2014-05-01

    We report on experimental evidence of neuronlike excitable behavior in a micropillar laser with saturable absorber. We show that under a single pulsed perturbation the system exhibits subnanosecond response pulses and analyze the role of the laser bias pumping. Under a double pulsed excitation we study the absolute and relative refractory periods, similarly to what can be found in neural excitability, and interpret the results in terms of a dynamical inhibition mediated by the carrier dynamics. These measurements shed light on the analogy between optical and biological neurons and pave the way to fast spike-time coding based optical systems with a speed several orders of magnitude faster than their biological or electronic counterparts.

  14. Relative refractory period in an excitable semiconductor laser.

    PubMed

    Selmi, F; Braive, R; Beaudoin, G; Sagnes, I; Kuszelewicz, R; Barbay, S

    2014-05-01

    We report on experimental evidence of neuronlike excitable behavior in a micropillar laser with saturable absorber. We show that under a single pulsed perturbation the system exhibits subnanosecond response pulses and analyze the role of the laser bias pumping. Under a double pulsed excitation we study the absolute and relative refractory periods, similarly to what can be found in neural excitability, and interpret the results in terms of a dynamical inhibition mediated by the carrier dynamics. These measurements shed light on the analogy between optical and biological neurons and pave the way to fast spike-time coding based optical systems with a speed several orders of magnitude faster than their biological or electronic counterparts. PMID:24856697

  15. Theoretical investigation of a semiconductor ring laser driven by Chua's oscillator

    NASA Astrophysics Data System (ADS)

    Takougang Kingni, Sifeu; Woafo, Paul

    2013-06-01

    The modeling and numerical investigation of the dynamical behavior of a semiconductor ring laser (SRL) driven by Chua's oscillator are reported. By increasing the coupling strength between the SRL and Chua's oscillator at a fixed bias current, the SRL exhibits an intermittency route to anti-phase chaos. However, for a fixed value of the coupling strength, we report a period-doubling route to out-of-phase and anti-phase chaos when varying one of the parameters of the Chua's oscillator are reported. We also demonstrate that a SRL driven by the chaotic output of Chua's oscillator generates a more complex chaos compared to the one found in a SRL subject to a sinusoidally modulated current. This new way of modulation of semiconductor lasers would not only bring a general benefit in the physical equipment and reduce their cost but could have an impact for some relevant engineering applications.

  16. Efficient gas lasers pumped by double-discharge circuits with semiconductor opening switch

    NASA Astrophysics Data System (ADS)

    Panchenko, Alexei N.; Tarasenko, Victor F.

    2012-01-01

    A review of applications of double-discharge circuits based on generators with inductive energy storage (IES) and semiconductor opening switches (SOS) for efficient excitation of different gas lasers is presented. Using a pre-pulse-sustainer circuit technique based on inductive energy storage and semiconductor opening switch generators allows the formation of a pre-pulse with high amplitude and short rise-time and provides a sharp increase of discharge current which significantly improves discharge stability and life-time of the volume discharge in gas mixtures containing halogens. A pre-pulse with high pumping power forms a high-density discharge plasma and an inversion population in gas mixtures under study within ∼10 ns and provides both early onset of lasing and conditions for efficient excitation of an active medium from the storage capacitor. As a result, pulse duration, output energy and efficiency of the lasers under study were improved.

  17. Simulation studies of the dynamic behavior of semiconductor lasers with Auger recombination

    SciTech Connect

    Tang, M.; Wang, S.

    1987-06-29

    We apply the phase portrait analysis to semiconductor lasers with Auger recombination and extend the analysis to high modulation frequency ..omega../sub m/. On the two-dimensional bifurcation diagram of modulation depth and modulation frequency, there are seven regions: digital pulsing regions, analog modulation region, period doubling regions, chaos regions, and one multiloop region. It is found that Auger recombination tends to suppress chaos for ..omega../sub m/<..omega../sub r/, the relaxation frequency. However, for ..omega../sub m/>..omega../sub r/, chaotic behavior becomes prominent. Furthermore, in the pulsing region, the maximum pulsation frequency is limited to a value around ..omega../sub r/ even though ..omega../sub m/ may be twice or three times ..omega../sub r/. A normalized two-dimensional bifurcation diagram defining the digital pulse region and the analog modulation region is presented for the purpose of locating the suitable region for analog and digital operation of semiconductor lasers.

  18. Ten years optically pumped semiconductor lasers: review, state-of-the-art, and future developments

    NASA Astrophysics Data System (ADS)

    Kannengiesser, Christian; Ostroumov, Vasiliy; Pfeufer, Volker; Seelert, Wolf; Simon, Christoph; von Elm, Rüdiger; Zuck, Andreas

    2010-02-01

    Optically Pumped Semiconductor Lasers - OPSLs - have been introduced in 2001. Their unique features such as power scalability and wavelength flexibility, their excellent beam parameters, power stability and reliability opened this pioneering technology access to a wide range of applications such as flow cytometry, confocal microscopy, sequencing, medical diagnosis and therapy, semiconductor inspection, graphic arts, forensic, metrology. This talk will introduce the OPSL principles and compare them with ion, diode and standard solid state lasers. It will revue the first 10 years of this exciting technology, its current state and trends. In particular currently accessible wavelengths and power ranges, frequency doubling, ultra-narrow linewidth possibilities will be discussed. A survey of key applications will be given.

  19. Low-noise Raman fiber amplifier pumped by semiconductor disk laser.

    PubMed

    Chamorovskiy, A; Rautiainen, J; Rantamäki, A; Okhotnikov, O G

    2011-03-28

    A 1.3 µm Raman fiber amplifier pumped by 1.22 µm semiconductor disk laser in co-propagation geometry is demonstrated. Measured relative intensity noise of -148 dB/Hz over frequency range up to 3.5 GHz was measured at 900 mW of pump power. 9 dB gain was achieved with co-propagating pumping geometry with less than 2 dB additional noise induced by amplifier to the signal. Nearly shot-noise-limited operation of semiconductor disk laser combined with the diffraction-limited beam allows for efficient core-pumping of the single-mode fiber Raman amplifiers and represents a highly practical approach which takes full advantage of co-propagating pumping. PMID:21451669

  20. Semiconductor laser self-mixing micro-vibration measuring technology based on Hilbert transform

    NASA Astrophysics Data System (ADS)

    Tao, Yufeng; Wang, Ming; Xia, Wei

    2016-06-01

    A signal-processing synthesizing Wavelet transform and Hilbert transform is employed to measurement of uniform or non-uniform vibrations in self-mixing interferometer on semiconductor laser diode with quantum well. Background noise and fringe inclination are solved by decomposing effect, fringe counting is adopted to automatic determine decomposing level, a couple of exact quadrature signals are produced by Hilbert transform to extract vibration. The tempting potential of real-time measuring micro vibration with high accuracy and wide dynamic response bandwidth using proposed method is proven by both simulation and experiment. Advantages and error sources are presented as well. Main features of proposed semiconductor laser self-mixing interferometer are constant current supply, high resolution, simplest optical path and much higher tolerance to feedback level than existing self-mixing interferometers, which is competitive for non-contact vibration measurement.

  1. A semiconductor ring laser: study of its characteristics as a rotation sensor

    SciTech Connect

    Akparov, V V; Dmitriev, Valentin G; Duraev, V P; Kazakov, A A

    2010-12-09

    A semiconductor ring laser (SRL) with a radiation wavelength of 1540 nm and a fibre ring cavity is developed and studied in several main lasing regimes. An SRL design based on a semiconductor optical travelling-wave amplifier and a ring cavity, composed of a single-mode polarisation-maintaining fibre, is considered. The SRL is studied in the regime of a rotation speed sensor, in which the frequency shift of counterpropagating waves in the SRL is proportional to its rotation speed. The minimum rotation speed that can be detected using the SRL under consideration depends on the cavity length; in our experiment it turned to be 1deg s{sup -1}. The changes in the threshold current, emission spectrum, and fundamental radiation wavelength upon closing and opening the SRL ring cavity and with a change in its radius are also investigated. (lasers)

  2. Novel cavities and functionality in high-power highbrightness semiconductor vertical external cavity surface emitting lasers

    NASA Astrophysics Data System (ADS)

    Hessenius, Chris

    Ever since the first laser demonstration in 1960, applications for laser systems have increased to include diverse fields such as: national defense, biology and medicine, entertainment, imaging, and communications. In order to serve the growing demand, a wide range of laser types including solid-state, semiconductor, gas, and dye lasers have been developed. For most applications it is critical to have lasers with both high optical power and excellent beam quality. This has traditionally been difficult to simultaneously achieve in semiconductor lasers. In the mid 1990's, the advent of an optically pumped semiconductor vertical-external-cavity surface-emitting laser (VECSEL) led to the demonstration of high (multi-watt) output power with near diffraction limited (TEM00) beam quality. Since that time VECSELs covering large wavelength regions have been developed. It is the objective of this dissertation to investigate and explore novel cavity designs which can lead to increased functionality in high power, high brightness VECSELs. Optically pumped VECSELs have previously demonstrated their potential for high power, high brightness operation. In addition, the "open" cavity design of this type of laser makes intracavity nonlinear frequency conversion, linewidth narrowing, and spectral tuning very efficient. By altering the external cavity design it is possible to add additional functionality to this already flexible design. In this dissertation, the history, theory, design, and fabrication are first presented as VECSEL performance relies heavily on the design and fabrication of the chip. Basic cavities such as the linear cavity and v-shaped cavity will be discussed, including the role they play in wavelength tuning, transverse mode profile, and mode stability. The development of a VECSEL for use as a sodium guide star laser is presented including the theory and simulation of intracavity frequency generation in a modified v-cavity. The results show agreement with theory

  3. Long-term stabilization of single longitudinal mode in external cavity semiconductor lasers

    SciTech Connect

    Zhang Hanyi; Zhou Jianying; Wu Yuanxing; Li Jian; Pang Zhengwu; Zhou Bingkun

    1988-05-01

    Long-term frequency stabilization of a single longitudinal mode (SLM) external cavity semiconductor laser has been demonstrated by using multisegment composite-cavity configuration and automatic frequency control loop with feedback to control the external cavity length. The time period of mode-hopping free SLM operation has been observed to be more than 24 hours with a frequency shift of about 28 MHz and a linewidth of less than 200 kHz.

  4. Organic semiconductor distributed feedback laser pixels for lab-on-a-chip applications fabricated by laser-assisted replication.

    PubMed

    Liu, Xin; Prinz, Stephan; Besser, Heino; Pfleging, Wilhelm; Wissmann, Markus; Vannahme, Christoph; Guttmann, Markus; Mappes, Timo; Koeber, Sebastian; Koos, Christian; Lemmer, Uli

    2014-01-01

    The integration of organic semiconductor distributed feedback (DFB) laser sources into all-polymer chips is promising for biomedical or chemical analysis. However, the fabrication of DFB corrugations is often expensive and time-consuming. Here, we apply the method of laser-assisted replication using a near-infrared diode laser beam to efficiently fabricate inexpensive poly(methyl methacrylate) (PMMA) chips with spatially localized organic DFB laser pixels. This time-saving fabrication process enables a pre-defined positioning of nanoscale corrugations on the chip and a simultaneous generation of nanoscale gratings for organic edge-emitting laser pixels next to microscale waveguide structures. A single chip of size 30 mm × 30 mm can be processed within 5 min. Laser-assisted replication allows for the subsequent addition of further nanostructures without a negative impact on the existing photonic components. The minimum replication area can be defined as being as small as the diode laser beam focus spot size. To complete the fabrication process, we encapsulate the chip in PMMA using laser transmission welding. PMID:25471492

  5. N.G. Basov and early works on semiconductor lasers at P.N. Lebedev Physics Institute

    SciTech Connect

    Eliseev, P G

    2012-12-31

    A survey is presented of works on creation and investigation of semiconductor lasers during 1957 - 1977 at the P.N. Lebedev Physics Institute. Many of these works were initiated by N.G. Basov, starting from pre-laser time, when N.G. Basov and his coworkers formulated principal conditions of creation of lasers on interband transitions in semiconductors. Main directions of further works were diode lasers based on various materials and structures, their characteristics of output power, high-speed operation and reliability. (special issue devoted to the 90th anniversary of n.g. basov)

  6. Numerical analysis of the feedback regimes for a single-mode semiconductor laser with external feedback

    SciTech Connect

    Schunk, N.; Petermann, K.

    1988-07-01

    The effect of external feedback on a single-mode semiconductor laser is estimated by a numerical solution of the nonlinear rate equations, yielding an excellent description experimental results. It is found that the lasing mode with the minimum linewidth is most stable rather than the mode with minimum threshold gain. The transition to the coherence-collapse regime is of particular interest. It usually occurs for feedback fractions approx. = 10/sup -4/, but it may shifted to considerably larger feedback levels by either increasing the emitted optical power, the laser length, or by decreasing the linewidth enhancement factor ..cap alpha...

  7. High power frequency doubled GaInNAs semiconductor disk laser emitting at 615 nm.

    PubMed

    Härkönen, Antti; Rautiainen, Jussi; Guina, Mircea; Konttinen, Janne; Tuomisto, Pietari; Orsila, Lasse; Pessa, Markus; Okhotnikov, Oleg G

    2007-03-19

    We report on an optically-pumped intracavity frequency doubled GaInNAs/GaAs -based semiconductor disk laser emitting around 615 nm. The laser operates at fundamental wavelength of 1230 nm and incorporates a BBO crystal for light conversion to the red wavelength. Maximum output power of 172 mW at 615 nm was achieved from a single output. Combined power from two outputs was 320 mW. The wavelength of visible emission could be tuned by 4.5 nm using a thin glass etalon inside the cavity. PMID:19532562

  8. Tunable directly modulated fiber ring laser using a reflective semiconductor optical amplifier for WDM access networks.

    PubMed

    Lin, Zih-Rong; Liu, Cheng-Kuang; Jhang, Yu-Jhu; Keiser, Gerd

    2010-08-16

    We have proposed a stable, wideband, and tunable directly modulated fiber ring laser (TDMFRL) by using a reflective semiconductor optical amplifier (RSOA) and an optical tunable filter (OTF). For use in a bidirectional access network, the TDMFRL not only generates downstream data traffic but also serves as the wavelength-selecting injection light source for the Fabry-Pérot laser diode (FP-LD) located at the subscriber site. We experimentally demonstrated a bidirectional transmission at 1.25-Gb/s direct modulation over a 25-km single-mode fiber (SMF), thereby showing good performance in a wavelength division multiplexing (WDM) access network. PMID:20721147

  9. High-power, efficient, semiconductor saturable absorber mode-locked Yb:KGW bulk laser.

    PubMed

    Kisel, V E; Rudenkov, A S; Pavlyuk, A A; Kovalyov, A A; Preobrazhenskii, V V; Putyato, M A; Rubtsova, N N; Semyagin, B R; Kuleshov, N V

    2015-06-15

    A high-power, diode-pumped, semiconductor saturable absorber mode-locked Yb(5%):KGW bulk laser was demonstrated with high optical-to-optical efficiency. Average output power as high as 8.8 W with optical-to-optical efficiency of 37.5% was obtained for Nm-polarized laser output with 162 fs pulse duration and 142 nJ pulse energy at a pulse repetition frequency of 62 MHz. For Np polarization, 143 fs pulses with pulse energy of 139 nJ and average output power of up to 8.6 W with optical-to-optical efficiency of 31% were generated. PMID:26076242

  10. Experimental demonstration of distributed feedback semiconductor lasers based on reconstruction-equivalent-chirp technology.

    PubMed

    Li, Jingsi; Wang, Huan; Chen, Xiangfei; Yin, Zuowei; Shi, Yuechun; Lu, Yanqing; Dai, Yitang; Zhu, Hongliang

    2009-03-30

    In this paper we report, to the best of our knowledge, the first experimental realization of distributed feedback (DFB) semiconductor lasers based on reconstruction-equivalent-chirp (REC) technology. Lasers with different lasing wavelengths are achieved simultaneously on one chip, which shows a potential for the REC technology in combination with the photonic integrated circuits (PIC) technology to be a possible method for monolithic integration, in that its fabrication is as powerful as electron beam technology and the cost and time-consuming are almost the same as standard holographic technology. PMID:19333287

  11. Mode-expanded semiconductor laser with tapered-rib adiabatic-following fiber coupler

    SciTech Connect

    Vawter, G.A.; Smith, R.E.; Hou, H.; Wendt, J.R.

    1996-12-01

    Expanded-mode semiconductor lasers are of great interest due to the benefits of reduced far-field divergence and improved coupling efficiency to optical fiber. The authors present a new diode laser using a Tapered-Rib Adiabatic-Following Fiber Coupler (TRAFFiC) to achieve 2D mode expansion without epitaxial regrowth or sharply-defined tips on tapered waveguides. The expanded mode size would allow 0.25 to 1 dB coupling loss to standard telecommunications fiber making smaller-core specialty fibers unnecessary, increasing misalignment tolerance, and eliminating the need for coupling optics.

  12. 1.3-microm optically-pumped semiconductor disk laser by wafer fusion.

    PubMed

    Lyytikäinen, Jari; Rautiainen, Jussi; Toikkanen, Lauri; Sirbu, Alexei; Mereuta, Alexandru; Caliman, Andrei; Kapon, Eli; Okhotnikov, Oleg G

    2009-05-25

    We report a wafer-fused high power optically-pumped semiconductor disk laser operating at 1.3 microm. An InP-based active medium was fused with a GaAs/AlGaAs distributed Bragg reflector, resulting in an integrated monolithic gain mirror. Over 2.7 W of output power, obtained at temperature of 15 degrees C, represents the best achievement reported to date for this type of lasers. The results reveal an essential advantage of the wafer fusing technique over both monolithically grown AlGaInAs/GaInAsP- and GaInNAs-based structures. PMID:19466154

  13. Imaging of free carriers in semiconductors via optical feedback in terahertz quantum cascade lasers

    SciTech Connect

    Mezzapesa, F. P. Brambilla, M.; Dabbicco, M.; Scamarcio, G.; Columbo, L. L.; Vitiello, M. S.

    2014-01-27

    To monitor the density of photo-generated charge carriers on a semiconductor surface, we demonstrate a detectorless imaging system based on the analysis of the optical feedback in terahertz quantum cascade lasers. Photo-excited free electron carriers are created in high resistivity n-type silicon wafers via low power (≅40 mW/cm{sup 2}) continuous wave pump laser in the near infrared spectral range. A spatial light modulator allows to directly reconfigure and control the photo-patterned intensity and the associated free-carrier density distribution. The experimental results are in good agreement with the numerical simulations.

  14. Near infrared laser stimulation of human neural stem cells into neurons on graphene nanomesh semiconductors.

    PubMed

    Akhavan, Omid; Ghaderi, Elham; Shirazian, Soheil A

    2015-02-01

    Reduced graphene oxide nanomeshes (rGONMs), as p-type semiconductors with band-gap energy of ∼ 1 eV, were developed and applied in near infrared (NIR) laser stimulation of human neural stem cells (hNSCs) into neurons. The biocompatibility of the rGONMs in growth of hNSCs was found similar to that of the graphene oxide (GO) sheets. Proliferation of the hNSCs on the GONMs was assigned to the excess oxygen functional groups formed on edge defects of the GONMs, resulting in superhydrophilicity of the surface. Under NIR laser stimulation, the graphene layers (especially the rGONMs) exhibited significant cell differentiations, including more elongations of the cells and higher differentiation of neurons than glia. The higher hNSC differentiation on the rGONM than the reduced GO (rGO) was assigned to the stimulation effects of the low-energy photoexcited electrons injected from the rGONM semiconductors into the cells, while the high-energy photoelectrons of the rGO (as a zero band-gap semiconductor) could suppress the cell proliferation and/or even cause cell damages. Using conventional heating of the culture media up to ∼ 43 °C (the temperature typically reached under the laser irradiation), no significant differentiation was observed in dark. This further confirmed the role of photoelectrons in the hNSC differentiation. PMID:25578421

  15. All-electronic line width reduction in a semiconductor diode laser using a crystalline microresonator

    NASA Astrophysics Data System (ADS)

    Rury, Aaron S.; Mansour, Kamjou; Yu, Nan

    2015-07-01

    This study examines the capability to significantly suppress the frequency noise of a semiconductor distributed feedback diode laser using a universally applicable approach: a combination of a high-Q crystalline whispering gallery mode microresonator reference and the Pound-Drever-Hall locking scheme using an all-electronic servo loop. An out-of-loop delayed self-heterodyne measurement system demonstrates the ability of this approach to reduce a test laser's absolute line width by nearly a factor of 100. In addition, in-loop characterization of the laser stabilized using this method demonstrates a 1-kHz residual line width with reference to the resonator frequency. Based on these results, we propose that utilization of an all-electronic loop combined with the use of the wide transparency window of crystalline materials enable this approach to be readily applicable to diode lasers emitting in other regions of the electromagnetic spectrum, especially in the UV and mid-IR.

  16. Diode-Laser Pumped Far-Infrared Local Oscillator Based on Semiconductor Quantum Wells

    NASA Technical Reports Server (NTRS)

    Kolokolov, K.; Li, J.; Ning, C. Z.; Larrabee, D. C.; Tang, J.; Khodaparast, G.; Kono, J.; Sasa, S.; Inoue, M.; Biegel, Bryan A. (Technical Monitor)

    2002-01-01

    The contents include: 1) Tetrahertz Field: A Technology Gap; 2) Existing THZ Sources and Shortcomings; 3) Applications of A THZ Laser; 4) Previous Optical Pumped LW Generations; 5) Optically Pumped Sb based Intersubband Generation Whys; 6) InGaAs/InP/AlAsSb QWs; 7) Raman Enhanced Optical Gain; 8) Pump Intensity Dependence of THZ Gain; 9) Pump-Probe Interaction Induced Raman Shift; 10) THZ Laser Gain in InGaAs/InP/AlAsSb QWs; 11) Diode-Laser Pumped Difference Frequency Generation (InGaAs/InP/AlAsSb QWs); 12) 6.1 Angstrom Semiconductor Quantum Wells; 13) InAs/GaSb/AlSb Nanostructures; 14) InAs/AlSb Double QWs: DFG Scheme; 15) Sb-Based Triple QWs: Laser Scheme; and 16) Exciton State Pumped THZ Generation. This paper is presented in viewgraph form.

  17. Output characteristics of a semiconductor laser diode with two circular ring resonators

    NASA Astrophysics Data System (ADS)

    Shih, Ming Chang; Kao, Yi Hsiang; How Lan, Wen

    2016-04-01

    Here, we present the output characteristics of a semiconductor laser diode with two circular ring resonators. The material of the laser diode is a metal organic chemical vapor deposition (MOCVD)-grown InGaAlP multiple-quantum-well (MQW) structure. The current injection of the laser diode is confined by the ridge waveguide of two circular ring resonators connected by two directional couplers. The confined light output through the nonwaveguide region of the substrate was observed. Measurements of light-current (L-I) and spectral characteristics at each output terminal were presented. These measurements showed asymmetric output characteristics of emission from two directional coupling terminals. In addition, output characteristics of a laser diode device with larger diameter ring resonators showed shifting of the lasing emission wavelength from a different side of the output coupling terminal.

  18. Determination of nanovibration amplitudes using frequency-modulated semiconductor laser autodyne

    SciTech Connect

    Usanov, D A; Skripal, A V; Astakhov, E I

    2014-02-28

    The method for measuring nanovibration amplitudes using the autodyne signal of a semiconductor laser at several laser radiation wavelengths is described. The theoretical description of the frequency-modulated autodyne signal under harmonic vibrations of the reflector is presented and the relations for its spectral components are derived using the expansions into the Fourier and Bessel series. The results of numerical modelling based on the proposed method for measuring the reflector nanovibration amplitudes are presented that make use of the low-frequency spectrum of the autodyne signal from the frequency-modulated laser autodyne and the solution of the appropriate inverse problem. The experimental setup is described; the results of the measurements are presented for the nanovibration amplitudes and the autodyne signal spectra under the reflector nanovibrations. (laser applications and other topics in quantum electronics)

  19. Ablation model for semiconductors and dielectrics under ultrafast laser pulses for solar cells micromachining

    NASA Astrophysics Data System (ADS)

    Gurizzan, Alberto; Villoresi, Paolo

    2015-01-01

    Ultrafast laser pulses provide a new tool for material processing. The ultrafast regime leads to nonlinear absorption and nonthermal interaction with the target yielding significant advantages in solar cells micromachining over traditional mechanical or Q-switched laser processes: high process speed, high energetic efficiency, reduced heat affected zone (HAZ), high quality and precision of the realized structures. Therefore, a description of the dominant physical processes underlying the ultrafast laser-matter interaction is needed to develop a simplified model able to provide an explanation of the different aspect of the process. This paper provides an overview of the fundamental equations governing the laser-material interaction process in a typical dielectric-semiconductor structure and discusses the solution on a 3D axisymmetric domain obtained with a finite element method (FEM) software applied to the problem of selective dielectric delamination in PV solar cells.

  20. Frequency tunable optoelectronic oscillator based on a directly modulated DFB semiconductor laser under optical injection.

    PubMed

    Wang, Peng; Xiong, Jintian; Zhang, Tingting; Chen, Dalei; Xiang, Peng; Zheng, Jilin; Zhang, Yunshan; Li, Ruoming; Huang, Long; Pu, Tao; Chen, Xiangfei

    2015-08-10

    A frequency tunable optoelectronic oscillator based on a directly modulated distributed-feedback (DFB) semiconductor laser under optical injection is proposed and experimentally demonstrated. Through optical injection, the relaxation oscillation frequency of the DFB laser is enhanced and its high modulation efficiency can enable the loop oscillation with a RF threshold gain of less than 20 dB. The DFB laser is a commercial semiconductor laser with a package of 10 GHz, and its packaging limitation can be overcome by optical injection. In our scheme, neither a high-speed external modulator nor an electrical bandpass filter is required, making the system simple and low-cost. Microwave signals with a frequency tuning range from 5.98 to 15.22 GHz are generated by adjusting the injection ratio and frequency detuning between the master and slave lasers. The phase noise of the generated 9.75 GHz microwave signal is measured to be -104.8 dBc/Hz @ 10 kHz frequency offset. PMID:26367899

  1. Long wavelength semiconductor lasers development for infrared heterodyne applications

    NASA Technical Reports Server (NTRS)

    Feit, Zeev; Kostyk, Douglas

    1989-01-01

    PbSnTe single crystals were grown in a new 3 zone furnace. Molecular beam epitaxy (MBE) growth parameters have been established, including beam flux vs. temperature, and growth rates and dopant vs. PbTe flux ratios for the various effusion sources involved. Lattice matching studies were conducted and doping studies were completed. Broad area Pb(1-x)Sn(x)Te double heterostructure lasers were fabricated with active layer compositions up to x equals 0.04 at percent Sn in the active layers. Electrical and optical test data are presented.

  2. Subpicometer Length Measurement Using Semiconductor Laser Tracking Frequency Gauge

    NASA Technical Reports Server (NTRS)

    Thapa, Rajesh; Phillips, James D.; Rocco, Emanuele; Reasenburg, Robert D.

    2011-01-01

    We have demonstrated heretofore unattained distance precision of 0:14pm (2pm) incremental and 14nm (2.9 micrometers) absolute in a resonant (nonresonant) interferometer at an averaging time of 1 s, using inexpensive telecommunications diode lasers. We have controlled the main source of error, that due to spurious reflection and the resulting amplitude modulation. In the resonant interferometer, absolute distance precision is well under lambda/6. Therefore, after an interruption, an absolute distance measurement can be used to return to the same interferometer order.

  3. Electrical and optical study of semiconductor laser diodes and materials

    NASA Technical Reports Server (NTRS)

    Albin, Sacharia

    1987-01-01

    The characterization of a 2-D diode laser array from McDonald Douglas has been completed. The array consisted of 8 linear arrays of approximately 11 mm x 0.18 mm. Each array has between 7 and 8 diodes per mm. The threshold current is approximately 15 amps. The power output vs drive current (above threshold) of the array was measured. A peak power of 50 W was obtained at a drive current of 26 amps. Its far field pattern has a double lobe.

  4. Continuously-tunable single-frequency semiconductor lasers

    SciTech Connect

    Coldren, L.A.; Corzine, S.W.

    1987-06-01

    The design of ''ideal'' tunable laser sources that are capable of being continuously turned over the entire gain bandwith with maximum mode suppression are considered. It is shown that certain extended-cavity three-section configurations satisfy the necessary conditions for such electronic tunability, but that phase shifters with advanced capabilities are necessary. It is also shown that it is not possible to achieve this goal in a two-section configuration, although continuous tuning up to about one longitudinal mode spacing should be possible with some compromise in spurious mode suppression.

  5. Performance characteristics of a 1. 5. mu. m single-frequency semiconductor laser with an external waveguide Bragg reflector

    SciTech Connect

    Olsson, N.A.; Henry, C.H.; Kazarinov, R.F.; Lee, H.J.; Orlowsky, K.J.; Johnson, B.H.; Scotti, R.E.; Ackerman, D.A.; Anthony, P.J.

    1988-02-01

    Single-frequency operation of 1.5 ..mu..m semiconductor lasers was obtained by combining a regular Fabry-Perot laser to an external waveguide Bragg reflector. The laser is characterized by very pure single-frequency operation, 1 MHz linewidth, and greatly-reduced frequency chirp under direct modulation. The laser has been tested in 1.7 Gbit/s transmission experiments over 82.5 km of fiber.

  6. Modeling pulsed-laser melting of embedded semiconductor nanoparticles

    SciTech Connect

    Sawyer, C.A.; Guzman, J.; Boswell-Koller, C.N.; Sherburne, M.P.; Mastandrea, J.P.; Bustillo, K.C.; Ager III, J.W.; Haller, E.E.; Chrzan, D.C.

    2011-05-18

    Pulsed-laser melting (PLM) is commonly used to achieve a fast quench rate in both thin films and nanoparticles. A model for the size evolution during PLM of nanoparticles confined in a transparent matrix, such as those created by ion-beam synthesis, is presented. A self-consistent mean-field rate equations approach that has been used successfully to model ion beam synthesis of germanium nanoparticles in silica is extended to include the PLM process. The PLM model includes classical optical absorption, multiscale heat transport by both analytical and finite difference methods, and melting kinetics for confined nanoparticles. The treatment of nucleation and coarsening behavior developed for the ion beam synthesis model is modified to allow for a non-uniform temperature gradient and for interacting liquid and solid particles with different properties. The model allows prediction of the particle size distribution after PLM under various laser fluences, starting from any particle size distribution including as-implanted or annealed simulated samples. A route for narrowing the size distribution of embedded nanoparticles is suggested, with simulated distribution widths as low as 15% of the average size.

  7. Electrically pumped semiconductor laser with monolithic control of circular polarization

    PubMed Central

    Rauter, Patrick; Lin, Jiao; Genevet, Patrice; Khanna, Suraj P.; Lachab, Mohammad; Giles Davies, A.; Linfield, Edmund H.; Capasso, Federico

    2014-01-01

    We demonstrate surface emission of terahertz (THz) frequency radiation from a monolithic quantum cascade laser with built-in control over the degree of circular polarization by “fishbone” gratings composed of orthogonally oriented aperture antennas. Different grating concepts for circularly polarized emission are introduced along with the presentation of simulations and experimental results. Fifth-order gratings achieve a degree of circular polarization of up to 86% within a 12°-wide core region of their emission lobes in the far field. For devices based on an alternative transverse grating design, degrees of circular polarization as high as 98% are demonstrated for selected far-field regions of the outcoupled THz radiation and within a collection half-angle of about 6°. Potential and limitations of integrated antenna gratings for polarization-controlled emission are discussed. PMID:25512515

  8. Electrically pumped semiconductor laser with monolithic control of circular polarization.

    PubMed

    Rauter, Patrick; Lin, Jiao; Genevet, Patrice; Khanna, Suraj P; Lachab, Mohammad; Giles Davies, A; Linfield, Edmund H; Capasso, Federico

    2014-12-30

    We demonstrate surface emission of terahertz (THz) frequency radiation from a monolithic quantum cascade laser with built-in control over the degree of circular polarization by "fishbone" gratings composed of orthogonally oriented aperture antennas. Different grating concepts for circularly polarized emission are introduced along with the presentation of simulations and experimental results. Fifth-order gratings achieve a degree of circular polarization of up to 86% within a 12°-wide core region of their emission lobes in the far field. For devices based on an alternative transverse grating design, degrees of circular polarization as high as 98% are demonstrated for selected far-field regions of the outcoupled THz radiation and within a collection half-angle of about 6°. Potential and limitations of integrated antenna gratings for polarization-controlled emission are discussed. PMID:25512515

  9. Spontaneous locking of optical vortices in coupled semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Yadin, Yoav; Scheuer, Jacob; Gross, Yoav; Orenstein, Meir

    2014-09-01

    Non-conventional emission of light, comprising engaged rotating light cogs, is measured and analyzed. The source of this unique emission is an array of coupled surface emitting lasers, each emitting an optical vortex. The complex rotating light structures are formed spontaneously by specific combinations of the individual vortices, each carrying two types of "charge": orbital angular momentum (±1 topological charge) and a relative engagement phase (0 or π). These charges determine the specific form in which the individual rotating fields are engaged to generate the emanated light gear. The experimentally observed formations and dynamic evolution of the light gears stem from the complex nonlinear dynamics of the coupled rotating-field emitters, a mechanism which we have successfully modeled and utilized for interpreting the obtained results. The engaged light gears can be used in controlled generation and transmission of multiple degrees of freedom photons, for high-bit-rate classic and quantum telecommunications, particle manipulation, and super-resolution imaging.

  10. From Dye Laser Factory to Portable Semiconductor Laser: Four Generations of Sodium Guide Star Lasers for Adaptive Optics in Astronomy and Space Situational Awareness

    NASA Astrophysics Data System (ADS)

    d'Orgeville, C.; Fetzer, G.

    This presentation recalls the history of sodium guide star laser systems used in astronomy and space situational awareness adaptive optics, analysing the impact that sodium laser technology evolution has had on routine telescope operations. While it would not be practical to describe every single sodium guide star laser system developed to date, it is possible to characterize their evolution in broad technology terms. The first generation of sodium lasers used dye laser technology to create the first sodium laser guide stars in Hawaii, California, and Spain in the late 1980's and 1990's. These experimental systems were turned into the first laser guide star facilities to equip medium-to-large diameter adaptive optics telescopes, opening a new era of LGS AO-enabled diffraction-limited imaging from the ground. Although they produced exciting scientific results, these laser guide star facilities were large, power-hungry and messy. In the USA, a second-generation of sodium lasers was developed in the 2000's that used cleaner, yet still large and complex, solid-state laser technology. These are the systems in routine operation at the 8-10m class astronomical telescopes and 4m-class satellite imaging facilities today. Meanwhile in Europe, a third generation of sodium lasers was being developed using inherently compact and efficient fiber laser technology, and resulting in the only commercially available sodium guide star laser system to date. Fiber-based sodium lasers will be deployed at two astronomical telescopes and at least one space debris tracking station this year. Although highly promising, these systems remain significantly expensive and they have yet to demonstrate high performance in the field. We are proposing to develop a fourth generation of sodium lasers: based on semiconductor technology, these lasers could provide the final solution to the problem of sodium laser guide star adaptive optics for all astronomy and space situational awareness applications.

  11. Experimental mapping of nonlinear dynamics in synchronized coupled semiconductor laser networks

    NASA Astrophysics Data System (ADS)

    Argyris, Apostolos; Bourmpos, Michail; Syvridis, Dimitris

    2015-05-01

    The potential of conventional semiconductor lasers to generate complex and chaotic dynamics at a bandwidth that extends up to tens of GHz turns them into useful components in applications oriented to sensing and security. Specifically, latest theoretical and experimental works have demonstrated the capability of mutually coupled semiconductor lasers to exhibit a joint behaviour under various conditions. In an uncoupled network consisting of N similar SLs - representing autonomous nodes in the network - each node emits an optical signal of various dynamics depending on its biasing conditions and internal properties. These nodes remain unsynchronized unless appropriate coupling and biasing conditions apply. A synchronized behaviour can be in principle observed in sub-groups of lasers or in the overall laser network. In the present work, experimental topologies that employ eight SLs, under diverse biasing and coupling conditions, are built and investigated. The deployed systems incorporate off-the-shelf fiber-optic communications components operating at the 1550nm spectral window. The role of emission wavelength detuning of each participating node in the network - at GHz level - is evaluated.

  12. Effects of modulation in the complex dynamics of a semiconductor laser with feedback

    NASA Astrophysics Data System (ADS)

    Aragoneses, Andrés.; Sorrentino, Taciano; Quintero, Carlos A.; Perrone, Sandro; Torrent, M. C.; Masoller, Cristina

    2016-04-01

    Semiconductor lasers under external perturbations can manifest a broad variety of complex dynamics in their output power, from periodicity to high dimensional chaos. One of their characteristic behaviors, when submitted to optical feedback, is their excitability. These optical excitable devices, that mimic neuronal behavior, can serve as building-blocks for novel, brain-inspired information processing systems. Neuronal systems represent and process the information of a weak external input through correlated electrical spikes. Semiconductor lasers with low to moderate optical feedback, i.e. in the low frequency fluctuations (LFF) regime, display optical spikes with intrinsic temporal correlations, similar to those of biological neurons. Here we study the laser optical spiking dynamics under the influence of direct pump current modulation, focusing on the influence of the modulation frequency and amplitude. We characterize time correlations in the sequence of optical spikes by using symbolic ordinal analysis. This powerful tool allows detecting symbolic patterns in the laser output, and to quantify the effect of the frequency and amplitude of the modulation on the patterns probabilities. The experimental results are in good qualitative agreement with simulations of the Lang and Kobayashi model.

  13. Compact ultrafast semiconductor disk laser: targeting GFP based nonlinear applications in living organisms.

    PubMed

    Aviles-Espinosa, Rodrigo; Filippidis, George; Hamilton, Craig; Malcolm, Graeme; Weingarten, Kurt J; Südmeyer, Thomas; Barbarin, Yohan; Keller, Ursula; Santos, Susana I C O; Artigas, David; Loza-Alvarez, Pablo

    2011-01-01

    We present a portable ultrafast Semiconductor Disk Laser (SDL) (or vertical extended cavity surface emitting laser-VECSELs), to be used for nonlinear microscopy. The SDL is modelocked using a quantum-dot semiconductor saturable absorber mirror (SESAM), delivering an average output power of 287 mW, with 1.5 ps pulses at 500 MHz and a central wavelength of 965 nm. Specifically, despite the fact of having long pulses and high repetition rates, we demonstrate the potential of this laser for Two-Photon Excited Fluorescence (TPEF) imaging of in vivo Caenorhabditis elegans (C. elegans) expressing Green Fluorescent Protein (GFP) in a set of neuronal processes and cell bodies. Efficient TPEF imaging is achieved due to the fact that this wavelength matches the peak of the two-photon action cross section of this widely used fluorescent marker. The SDL extended versatility is shown by presenting Second Harmonic Generation images of pharynx, uterus, body wall muscles and its potential to be used to excite other different commercial dyes. Importantly this non-expensive, turn-key, compact laser system could be used as a platform to develop portable nonlinear bio-imaging devices. PMID:21483599

  14. Power-scalable 1.57 microm mode-locked semiconductor disk laser using wafer fusion.

    PubMed

    Saarinen, Esa J; Puustinen, Janne; Sirbu, Alexei; Mereuta, Alexandru; Caliman, Andrei; Kapon, Eli; Okhotnikov, Oleg G

    2009-10-15

    We report the first (to our knowledge) wafer-fused high-power passively mode-locked semiconductor disk laser operating at 1.57 microm wavelength. An InP-based active medium was fused with GaAs/AlGaAs distributed Bragg reflector on a 2 inch wafer level, resulting in an integrated monolithic gain mirror. An intracavity wedged diamond heat-spreader capillary bonded to the gain chip provides efficient heat removal from the gain structure without disturbing the spectrum of the mode-locked laser. The laser produces over 0.6 W of average output power at 15 degrees C with 16 ps pulse width. The total output power accounting for all output beams emerging from the cavity was 0.86 W. The results reveal an essential advantage of wafer fusion processing of disparate materials over monolithically grown InP-based gain structures and demonstrate the high potential of this technique for power scaling of long-wavelength semiconductor disk lasers. PMID:19838252

  15. Relaxation dynamics of femtosecond-laser-induced temperature modulation on the surfaces of metals and semiconductors

    NASA Astrophysics Data System (ADS)

    Levy, Yoann; Derrien, Thibault J.-Y.; Bulgakova, Nadezhda M.; Gurevich, Evgeny L.; Mocek, Tomáš

    2016-06-01

    Formation of laser-induced periodic surface structures (LIPSS) is a complicated phenomenon which involves periodic spatial modulation of laser energy absorption on the irradiated surface, transient changes in optical response, surface layer melting and/or ablation. The listed processes strongly depend on laser fluence and pulse duration as well as on material properties. This paper is aimed at studying the spatiotemporal evolution of a periodic modulation of the deposited laser energy, once formed upon irradiation of metal (Ti) and semiconductor (Si) surfaces. Assuming that the incoming laser pulse interferes with a surface electromagnetic wave, the resulting sinusoidal modulation of the absorbed laser energy is introduced into a two-dimensional two-temperature model developed for titanium and silicon. Simulations reveal that the lattice temperature modulation on the surfaces of both materials following from the modulated absorption remains significant for longer than 50 ps after the laser pulse. In the cases considered here, the partially molten phase exists 10 ps in Ti and more than 50 ps in Si, suggesting that molten matter can be subjected to temperature-driven relocation toward LIPSS formation, due to the modulated temperature profile on the material surfaces. Molten phase at nanometric distances (nano-melting) is also revealed.

  16. Improved performance of high average power semiconductor arrays for applications in diode pumped solid state lasers

    SciTech Connect

    Beach, R.; Emanuel, M.; Benett, W.; Freitas, B.; Ciarlo, D.; Carlson, N.; Sutton, S.; Skidmore, J.; Solarz, R.

    1994-01-01

    The average power performance capability of semiconductor diode laser arrays has improved dramatically over the past several years. These performance improvements, combined with cost reductions pursued by LLNL and others in the fabrication and packaging of diode lasers, have continued to reduce the price per average watt of laser diode radiation. Presently, we are at the point where the manufacturers of commercial high average power solid state laser systems used in material processing applications can now seriously consider the replacement of their flashlamp pumps with laser diode pump sources. Additionally, a low cost technique developed and demonstrated at LLNL for optically conditioning the output radiation of diode laser arrays has enabled a new and scalable average power diode-end-pumping architecture that can be simply implemented in diode pumped solid state laser systems (DPSSL`s). This development allows the high average power DPSSL designer to look beyond the Nd ion for the first time. Along with high average power DPSSL`s which are appropriate for material processing applications, low and intermediate average power DPSSL`s are now realizable at low enough costs to be attractive for use in many medical, electronic, and lithographic applications.

  17. Laser writing of semiconductor nanoparticles and quantum dots

    SciTech Connect

    Bertino, M.F.; Gadipalli, R.R.; Story, J.G.; Williams, C.G.; Zhang, G.; Sotiriou-Leventis, C.; Tokuhiro, A.T.; Guha, S.; Leventis, N.

    2004-12-13

    Silica aerogels were patterned with CdS using a photolithographic technique based on local heating with infrared (IR) light. The solvent of silica hydrogels was exchanged with an aqueous solution of the precursors CdNO{sub 3} and NH{sub 4}OH, all precooled to a temperature of 5 deg. C. Half of the bathing solution was then replaced by a thiourea solution. After thiourea diffused into the hydrogels, the samples were exposed to a focused IR beam from a continuous wave, Nd-YAG laser. The precursors reacted in the spots heated by the IR beam to form CdS nanoparticles. We lithographed features with a diameter of about 40 {mu}m, which extended inside the monoliths for up to 4 mm. Samples were characterized with transmission electron microscopy and optical absorption, photoluminescence, and Raman spectroscopies. Spots illuminated by the IR beam were made up by CdS nanoparticles dispersed in a silica matrix. The CdS nanoparticles had a diameter in the 4-6 nm range in samples exposed for 4 min to the IR beam, and of up to 100 nm in samples exposed for 10 min.

  18. Evaluation of surface and bulk qualities of semiconductor materials by a laser-induced photothermal technique

    NASA Astrophysics Data System (ADS)

    Dong, Jingtao; Chen, Jian; Sun, Shiwen; Zhang, Dawei; Zhuang, Songlin; Wu, Zhouling

    2015-05-01

    Non-destructive evaluation of defects for semiconductor materials is critical to the quality control process. The existing evaluation methods, including radiographic testing, ultrasonic detection, fluorescence and infrared imaging, are widely used in industrial applications. In this paper an instrument based on laser-induced photothermal technique was applied to study various semiconductor materials. With a specially arranged pump-probe configuration, this system can do three dimensional mapping of local properties and defects. By using this photothermal instrument, several semiconductors, such as bulk CdZnTe (CZT) crystals and monocrystalline silicon wafers under different processing conditions, were investigated. The surface and internal structures and defects of these materials were tested nondestructively by the 3-D photothermal microscope. The results show intersting correlation between the photothermal characterizations and the processing conditions. In addition, the details of the development of the 3-D photothermal microscope were also presented. The system provides user-friendly operations of the defects characterization process and shows great potential of application for characterization of semiconductor materials.

  19. Laser drilling of via micro-holes in single-crystal semiconductor substrates using a 1070nm fibre laser with millisecond pulse widths

    NASA Astrophysics Data System (ADS)

    Maclean, Jessica O.; Hodson, Jonathan R.; Voisey, K. T.

    2015-07-01

    Micro-machining of semiconductors is relevant to fabrication challenges within the semiconductor industry. For via holes for solar cells, laser drilling potentially avoids deep plasma etching which requires sophisticated equipment and corrosive, high purity gases. Other applications include backside loading of cold atoms into atom chips and ion traps for quantum physics research, for which holes through the semiconductor substrate are needed. Laser drilling, exploiting the melt ejection material removal mechanism, is used industrially for drilling hard to machine materials such as superalloys. Lasers of the kind used in this work typically form holes with diameters of 100's of microns and depths of a few millimetres in metals. Laser drilling of semiconductors typically uses short pulses of UV or long wavelength IR to achieve holes as small as 50 microns. A combination of material processes occurs including laser absorption, heating, melting, vaporization with vapour and dust particle ejection and resolidification. An investigation using materials with different fundamental material parameters allows the suitability of any given laser for the processing of semiconductors to be determined. We report results on the characterization of via holes drilled using a 2000 W maximum power 1070 nm fibre laser with 1-20 ms pulses using single crystal silicon, gallium arsenide and sapphire. Holes were characterised in cross-section and plan view. Significantly, relatively long pulses were effective even for wide bandgap substrates which are nominally transparent at 1070 nm. Examination of drilled samples revealed holes had been successfully generated in all materials via melt ejection.

  20. Use of a laser for the spectral analysis of semiconductor materials

    NASA Technical Reports Server (NTRS)

    Karyakin, A. V.; Akhmanova, M. V.; Kaygorodov, V. A.

    1978-01-01

    Conventional applications of lasers for emission spectroscopy involving direct recording of light pulses of an evaporated substance emitted from the sample under the action of the laser light (direct method) were examined. Use of the laser light for conversion of the substance to a vapor and feeding the vapors into the conventional source of emission such as arc, sparks, etc. (the so called 2 stage excitation) were studied for use in the spectral analysis, of semiconductors. The direct method has a high reproducibility (5-7%); the 2 stage excitation method, characterized by the same intensity as obtained with the conventional constant, current arc, has better reproducibility than the direct method (15-20%). Both methods can be used for the analysis of samples without prior preparation. Advantages of these methods are the elimination of impurities picked up during trituration of the samples into powders and shortening of the analytical procedures.

  1. Optimizing electrically pumped vertical extended cavity surface emitting semiconductor lasers (E-VECSELs)

    NASA Astrophysics Data System (ADS)

    McInerney, John G.; Mooradian, Aram

    2011-03-01

    The future evolution of photonics, for a wide spectrum of applications ranging from established optical telecommunications to emerging opportunities such as biotechnology, reprographics and projection displays, will depend on availability of compact, rugged, efficient and inexpensive lasers which deliver high power, good beam quality, excellent wavelength stability, low noise and long lifetime in the near infrared and visible regions. This combination is not readily available from either of the traditional classes of semiconductor laser, edge-emitters and vertical cavity surface emitters (VCSELs). Here we describe a novel class of laser based on geometry similar to VCSELs but controlled by an extended coupled cavity. These devices are scalable to high powers while maintaining fundamental spatial mode performance, a feature that is essential to efficient coupling into a single mode optical fibre or waveguide, or long range propagation in free space. They are also ideally suited to mode locking, gain-switching and intracavity frequency conversion, among other applications.

  2. Harmonic modulation of radiation of an external-feedback semiconductor laser

    SciTech Connect

    Sukharev, Aleksandr G; Napartovich, A P

    2007-02-28

    The appearance of the harmonic modulation regime at the Hopf bifurcation point is described analytically for a delayed-feedback semiconductor laser. The second-order delay differential equation with complex coefficients is derived. The frequency of oscillations appearing at the Hopf bifurcation point is determined by the solution of two relatively simple transcendental equations, from which the bifurcation point itself is found. These equations contain dependences on all the control parameters of the problem. The exact upper and lower limits of the oscillation frequency are found. A comparison with numerical results shows that the modulation frequency is preserved almost constant in a broad range of feedback phases. A procedure is proposed for determining the parameters of the laser providing the presence of bifurcations with a passage to oscillations with the specified frequency. The results obtained in the paper are of interest for WDM communication systems. (control of laser radiation parameters)

  3. High-order diffraction gratings for high-power semiconductor lasers

    SciTech Connect

    Vasil'eva, V. V.; Vinokurov, D. A.; Zolotarev, V. V.; Leshko, A. Yu.; Petrunov, A. N.; Pikhtin, N. A.; Rastegaeva, M. G.; Sokolova, Z. N. Shashkin, I. S.; Tarasov, I. S.

    2012-02-15

    A deep diffraction grating with a large period ({approx}2 {mu}m) within one of the cladding layers is proposed for the implementation of selective feedback in a semiconductor laser. Frequency dependences of reflectance in the 12th diffraction order for rectangular, triangular, and trapezoidal diffraction gratings are calculated. It is shown that the maximum reflectance of the waveguide mode is attained using a rectangular or trapezoidal grating {approx}2 {mu}m deep in the laser structure. Deep trapezoidal diffraction gratings with large periods are fabricated in the Al{sub 0.3}Ga{sub 0.7}As cladding layer of a GaAs/AlGaAs laser structure using photolithography and reactive ion etching.

  4. High-stability optical components for semiconductor laser intersatellite link experiment (SILEX) project

    NASA Astrophysics Data System (ADS)

    Lepretre, Francois

    1994-09-01

    Within the framework of a MATRA MARCONI SPACE FRANC contract for the European Space Agency, MATRA DEFENSE - DOD/UAO have developed, produced and tested 9 laser diode collimators, 52 optical components (anamorphoser, mirrors, dichroic splitters, redundancy module) and 9 interferential filters. All these space equipments must be integrated into the optical head of the SILEX (Semi-conductor Laser Intersatellite Link Experiment) bench. The SILEX experiment consists in transferring data from a low altitude satellite (SPOT 4) to a satellite in geostationary orbit (ARTEMIS) via beam generated by a laser diode (60 mW Cw). Very low emitted flux and long distance between the two satellites gives rise to the following technical difficulties: high angular (1 (mu) rad) and transverse stability requirements, requirement for high transmission and high rejection narrow band filters, in order to differentiate the transmit and receive channels, necessity of a very good optical wavefront, wavelength range 815-825 nm, 843-853 nm.

  5. Optical power of semiconductor lasers with a low-dimensional active region

    SciTech Connect

    Asryan, Levon V.; Sokolova, Zinaida N.

    2014-01-14

    A comprehensive analytical model for the operating characteristics of semiconductor lasers with a low-dimensional active region is developed. Particular emphasis is given to the effect of capture delay of both electrons and holes from a bulk optical confinement region into a quantum-confined active region and an extended set of rate equations is used. We derive a closed-form expression for the internal quantum efficiency as an explicit function of the injection current and parameters of a laser structure. Due to either electron or hole capture delay, the internal efficiency decreases with increasing injection current above the lasing threshold thus causing sublinearity of the light-current characteristic of a laser.

  6. Minimizing pattern effects in semiconductor lasers at high rate pulse modulation

    NASA Technical Reports Server (NTRS)

    Torphammar, P.; Tell, R.; Eklund, H.; Johnston, A. R.

    1979-01-01

    This paper deals with analytical and experimental work related to modulation of a semiconductor laser used in high bit rate communication. The approach is based upon minimizing the charge storage effect by a proper choice of the area of the modulating pulses and the bias current. The concept of using additional current pulses to probe for variations in electron density between pulses is investigated. The primary limitation on bit rate is found to be the ability to generate laser drive pulses free of ringing or similar transients. This and the 300 ps pulsewidth, an experimental constraint, limit the bit rate to about 1 Gbit/s. However, by using this approach it appears that bit rates considerably higher than 2 Gbits/s could be reached with sufficiently accurate control of drive pulse shape. It is found that the laser bias and the current pulse area had to be controlled within 1 percent and 10 percent, respectively.

  7. Spectral characteristics of multimode semiconductor lasers with a high-order surface diffraction grating

    SciTech Connect

    Zolotarev, V V; Leshko, A Yu; Pikhtin, N A; Lyutetskiy, A V; Slipchenko, S O; Bakhvalov, K V; Lubyanskiy, Ya V; Rastegaeva, M G; Tarasov, I S

    2014-10-31

    We have studied the spectral characteristics of multimode semiconductor lasers with high-order surface diffraction gratings based on asymmetric separate-confinement heterostructures grown by metalorganic vapour phase epitaxy (λ = 1070 nm). Experimental data demonstrate that, in the temperature range ±50 °C, the laser emission spectrum is ∼5 Å in width and contains a fine structure of longitudinal and transverse modes. A high-order (m = 15) surface diffraction grating is shown to ensure a temperature stability of the lasing spectrum dλ/dT = 0.9 Å K{sup -1} in this temperature range. From analysis of the fine structure of the lasing spectrum, we have evaluated the mode spacing and, thus, experimentally determined the effective length of the Bragg diffraction grating, which was ∼400 μm in our samples. (lasers)

  8. Compact ultrafast semiconductor disk laser for nonlinear imaging in living organisms

    NASA Astrophysics Data System (ADS)

    Aviles-Espinosa, Rodrigo; Filippidis, G.; Hamilton, Craig; Malcolm, Graeme; Weingarten, Kurt J.; Südmeyer, Thomas; Barbarin, Yohan; Keller, Ursula; Artigas, David; Loza-Alvarez, Pablo

    2011-03-01

    Ultrashort pulsed laser systems (such as Ti:sapphire) have been used in nonlinear microscopy during the last years. However, its implementation is not straight forward as they are maintenance-intensive, bulky and expensive. These limitations have prevented their wide-spread use for nonlinear imaging, especially in "real-life" biomedical applications. In this work we present the suitability of a compact ultrafast semiconductor disk laser source, with a footprint of 140x240x70 mm, to be used for nonlinear microscopy. The modelocking mechanism of the laser is based on a quantumdot semiconductor saturable absorber mirror (SESAM). The laser delivers an average output power of 287 mW with 1.5 ps pulses at 500 MHz, corresponding to a peak power of 0.4 kW. Its center wavelength is 965 nm which is ideally suited for two-photon excitation of the widely used Green Fluorescent Protein (GFP) marker as it virtually matches its twophoton action cross section. We reveal that it is possible to obtain two photon excited fluorescence images of GFP labeled neurons and secondharmonic generation images of pharynx and body wall muscles in living C. elegans nematodes. Our results demonstrate that this compact laser is well suited for long-term time-lapse imaging of living samples as very low powers provide a bright signal. Importantly this non expensive, turn-key, compact laser system could be used as a platform to develop portable nonlinear bio-imaging devices, facilitating its wide-spread adoption in "real-life" applications.

  9. Stimulated Brillouin scattering of laser in semiconductor plasma embedded with nano-sized grains

    SciTech Connect

    Sharma, Giriraj; Dad, R. C.; Ghosh, S.

    2015-07-31

    A high power laser propagating through semiconductor plasma undergoes Stimulated Brillouin scattering (SBS) from the electrostrictively generated acoustic perturbations. We have considered that nano-sized grains (NSGs) ions are embedded in semiconductor plasma by means of ion implantation. The NSGs are bombarded by the surrounding plasma particles and collect electrons. By considering a negative charge on the NSGs, we present an analytically study on the effects of NSGs on threshold field for the onset of SBS and Brillouin gain of generated Brillouin scattered mode. It is found that as the charge on the NSGs builds up, the Brillouin gain is significantly raised and the threshold pump field for the onset of SBS process is lowered.

  10. Nonlinear-microscopy optical-pulse sources based on mode-locked semiconductor lasers.

    PubMed

    Yokoyama, H; Sato, A; Guo, H-C; Sato, K; Mure, M; Tsubokawa, H

    2008-10-27

    We developed picosecond optical-pulse sources suitable for multiphoton microscopy based on mode-locked semiconductor lasers. Using external-cavity geometry, stable hybrid mode locking was achieved at a repetition rate of 500 MHz. Semiconductor optical amplifiers driven by synchronized electric pulses reached subharmonic optical-pulse repetition rates of 1-100 MHz. Two-stage Yb-doped fiber amplifiers produced optical pulses of 2 ps duration, with a peak power of a few kilowatts at a repetition rate of 10 MHz. These were employed successfully for nonlinear-optic bio-imaging using two-photon fluorescence, second-harmonic generation, and sum-frequency generation of synchronized two-color pulses. PMID:18958056

  11. Temperature dependent investigation of carrier transport, injection, and densities in 808 nm AlGaAs multi-quantum-well active layers for VCSELs

    NASA Astrophysics Data System (ADS)

    Engelhardt, Andreas P.; Kolb, Johanna S.; Römer, Friedhard; Weichmann, Ulrich; Moench, Holger; Witzigmann, Bernd

    2014-05-01

    The electro-optical efficiency of semiconductor vertical-cavity surface-emitting lasers (VCSELs) strongly depends on the efficient carrier injection into the quantum wells (QWs) in the laser active region. However, carrier injection degrades with increasing temperature which limits the VCSEL performance particularly in high power applications where self heating imposes high temperatures in operation. By simulation we investigate the transport of charge carriers in 808 nm AlGaAs multi-quantum-well active layers with special attention to the temperature dependence of carrier injection into the QWs. Experimental reference data was extracted from oxide-confined, top-emitting VCSELs. The transport simulations follow a drift-diffusion-model complemented by a customized, energy-resolved, semi-classical carrier capture theory. QW gain was calculated in the screened Hartree-Fock approximation with band structures from 8x8 k.p-theory. Using the gain data and by setting losses and the optical confinement factor according to experimental reference results, the appropriate threshold condition and threshold carrier densities in the QWs for a VCSEL are established in simulation for all transport considerations. With the combination of gain and transport model, we can explain experimental reference data for the injection efficiency and threshold current density. Our simulations show that the decreasing injection efficiency with temperature is not solely due to increased thermionic escape of carriers from the QWs. Carrier injection is also hampered by state filling in the QWs initiated from higher threshold carrier densities with temperature. Consequently, VCSEL properties not directly related to the active layer design like optical out-coupling or internal losses link the temperature dependent carrier injection to VCSEL mirror design.

  12. Low spatial coherence electrically pumped semiconductor laser for speckle-free full-field imaging.

    PubMed

    Redding, Brandon; Cerjan, Alexander; Huang, Xue; Lee, Minjoo Larry; Stone, A Douglas; Choma, Michael A; Cao, Hui

    2015-02-01

    The spatial coherence of laser sources has limited their application to parallel imaging and projection due to coherent artifacts, such as speckle. In contrast, traditional incoherent light sources, such as thermal sources or light emitting diodes (LEDs), provide relatively low power per independent spatial mode. Here, we present a chip-scale, electrically pumped semiconductor laser based on a novel design, demonstrating high power per mode with much lower spatial coherence than conventional laser sources. The laser resonator was fabricated with a chaotic, D-shaped cavity optimized to achieve highly multimode lasing. Lasing occurs simultaneously and independently in ∼1,000 modes, and hence the total emission exhibits very low spatial coherence. Speckle-free full-field imaging is demonstrated using the chaotic cavity laser as the illumination source. The power per mode of the sample illumination is several orders of magnitude higher than that of a LED or thermal light source. Such a compact, low-cost source, which combines the low spatial coherence of a LED with the high spectral radiance of a laser, could enable a wide range of high-speed, full-field imaging and projection applications. PMID:25605946

  13. Low spatial coherence electrically pumped semiconductor laser for speckle-free full-field imaging

    PubMed Central

    Redding, Brandon; Cerjan, Alexander; Huang, Xue; Lee, Minjoo Larry; Stone, A. Douglas; Choma, Michael A.; Cao, Hui

    2015-01-01

    The spatial coherence of laser sources has limited their application to parallel imaging and projection due to coherent artifacts, such as speckle. In contrast, traditional incoherent light sources, such as thermal sources or light emitting diodes (LEDs), provide relatively low power per independent spatial mode. Here, we present a chip-scale, electrically pumped semiconductor laser based on a novel design, demonstrating high power per mode with much lower spatial coherence than conventional laser sources. The laser resonator was fabricated with a chaotic, D-shaped cavity optimized to achieve highly multimode lasing. Lasing occurs simultaneously and independently in ∼1,000 modes, and hence the total emission exhibits very low spatial coherence. Speckle-free full-field imaging is demonstrated using the chaotic cavity laser as the illumination source. The power per mode of the sample illumination is several orders of magnitude higher than that of a LED or thermal light source. Such a compact, low-cost source, which combines the low spatial coherence of a LED with the high spectral radiance of a laser, could enable a wide range of high-speed, full-field imaging and projection applications. PMID:25605946

  14. Development of lead salt semiconductor lasers for the 9-17 micron spectral region

    NASA Technical Reports Server (NTRS)

    Linden, K. J.; Butler, J. F.; Nill, K. W.; Reeder, R. E.

    1981-01-01

    Improved diode lasers of Pb sub 1-x Sn sub x Se operating in the 9-17 micrometers spectral region were developed. The performance characteristics of the best lasers exceeded the contract goals of 500 microW/mode at T 30K in the 9-12 micrometers region and 200 microW/mode at T 18K in the 16-17 micrometers region. Increased reliability and device yields resulted from processing improvements which evolved from a series of diagnostic studies. By means of Auger electron spectroscopy, laser shelf storage degradation was shown to be characterized by the presence of In metal on the semiconductor crystal surfaces. Studies of various metal barrier layers between the crystals and the In metal led to the development of an improved metallurgical contacting technology which has resulted in devices with performance stability values exceeding the contract goal of a one year shelf life. Lasers cycled over 500 times between 300K and 77K were also shown to be stable. Studies on improved methods of fabricating striped geometry lasers indicated that good spectral mode characteristics resulted from lasers which stripe widths of 12 and 25 micrometers.

  15. Radio-over-fiber DSB-to-SSB conversion using semiconductor lasers at stable locking dynamics.

    PubMed

    Hsieh, Kun-Lin; Hung, Yu-Han; Hwang, Sheng-Kwang; Lin, Chien-Chung

    2016-05-01

    In radio-over-fiber systems, optical single-sideband (SSB) modulation signals are preferred to optical double-sideband (DSB) modulation signals for fiber distribution in order to mitigate the microwave power fading effect. However, typically adopted modulation schemes generate DSB signals, making DSB-to-SSB conversion necessary before or after fiber distribution. This study investigates a semiconductor laser at stable locking dynamics for such conversion. The conversion relies solely on the nonlinear dynamical interaction between an input DSB signal and the laser. Only a typical semiconductor laser is therefore required as the key conversion unit, and no pump or probe signal is necessary. The conversion can be achieved for a broad tunable range of microwave frequency up to at least 60 GHz. In addition, the conversion can be carried out even when the microwave frequency, the power of the input DSB signal, or the frequency of the input DSB signal fluctuates over a wide range, leading to high adaptability and stability of the conversion system. After conversion, while the microwave phase quality, such as linewidth and phase noise, is mainly preserved, a bit-error ratio down to 10-9 is achieved for a data rate up to at least 8 Gb/s with a detection sensitivity improvement of more than 1.5 dB. PMID:27137598

  16. Polymer biophotonic lab-on-chip devices with integrated organic semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Mappes, Timo; Vannahme, Christoph; Klinkhammer, Sönke; Woggon, Thomas; Schelb, Mauno; Lenhert, Steven; Mohr, Jürgen; Lemmer, Uli

    2009-08-01

    We present optofluidic lab-on-a-chip devices (LOCs) for single use as disposables. In our approach we are aiming for systems out of poly(methyl methacrylate) (PMMA) that integrate (a) organic lasers, (b) optical waveguides, (c) microfluidic channels, (d) surface functionalization, and (e) fluorescence excitation on one single chip. We are utilizing mass production techniques to show the applicability of this approach by avoiding electrical interconnects but using optical and fluidic interfaces only. With our experiments we can show the feasibility of this approach by respectively combining two consecutive elements (a - e) of the path of light: Organic semiconductor lasers are integrated by evaporating a thin film of photoactive material on top of a distributed feedback (DFB) grating. For this purpose, grating masters are replicated by hot embossing into PMMA bulk material. The lasing wavelength in the visible light regime is tuned by altering the thickness of the vacuum deposited organic semiconductor active material or the DFB grating period. Emitted light from the DFB laser is coupled into polymer strip optical waveguides realized by Deep UV lithography. The waveguides allow optical guidance to a microfluidic channel. Tailored surface functionalization in the microfluidic channel by Dip-Pen Nanolithography (DPN) enables the local excitation of fluorescent markers and thus a detection of selected components in biomedical or environmentally relevant fluids.

  17. Theoretical modeling of the dynamics of a semiconductor laser subject to double-reflector optical feedback

    NASA Astrophysics Data System (ADS)

    Bakry, A.; Abdulrhmann, S.; Ahmed, M.

    2016-06-01

    We theoretically model the dynamics of semiconductor lasers subject to the double-reflector feedback. The proposed model is a new modification of the time-delay rate equations of semiconductor lasers under the optical feedback to account for this type of the double-reflector feedback. We examine the influence of adding the second reflector to dynamical states induced by the single-reflector feedback: periodic oscillations, period doubling, and chaos. Regimes of both short and long external cavities are considered. The present analyses are done using the bifurcation diagram, temporal trajectory, phase portrait, and fast Fourier transform of the laser intensity. We show that adding the second reflector attracts the periodic and perioddoubling oscillations, and chaos induced by the first reflector to a route-to-continuous-wave operation. During this operation, the periodic-oscillation frequency increases with strengthening the optical feedback. We show that the chaos induced by the double-reflector feedback is more irregular than that induced by the single-reflector feedback. The power spectrum of this chaos state does not reflect information on the geometry of the optical system, which then has potential for use in chaotic (secure) optical data encryption.

  18. Wavelength-tunable actively mode-locked erbium-doped fiber ring laser using a distributed feedback semiconductor laser as mode locker and tunable filter

    NASA Astrophysics Data System (ADS)

    Li, Shenping; Chan, K. T.

    1999-07-01

    A wavelength-tunable actively mode-locked erbium fiber ring laser was demonstrated using a distributed feedback semiconductor laser as an intensity mode locker and a tunable optical filter. Very stable optical pulse trains at gigabit repetition rates were generated using harmonica mode locking. The supermode noise was suppressed to 60 dB below the signal level and the root-mean-square timing jitter (0.45 kHz-1 MHz) was found to be about 1% of the pulse duration. A continuous wavelength tuning range of 1.8 nm was achieved by changing the semiconductor laser temperature from 11.4 to 30 °C.

  19. Tunable narrow linewidth AlGaInP semiconductor disk laser for Sr atom cooling applications.

    PubMed

    Pabœuf, David; Hastie, Jennifer E

    2016-07-01

    We report a frequency-stabilized semiconductor disk laser based on AlGaInP and operating at 689 nm, a wavelength of interest for atomic clocks based on strontium atoms. With a gain structure designed for emission at around 690 nm, more than 100 mW of output power are generated in single-frequency operation. We show that the source can be tuned over 8 nm with pm precision. By servo-locking the frequency to the side of fringe of a reference cavity, we demonstrate rms frequency noise of 5.2 kHz. PMID:27409180

  20. High performance wafer-fused semiconductor disk lasers emitting in the 1300 nm waveband.

    PubMed

    Sirbu, Alexei; Rantamäki, Antti; Saarinen, Esa J; Iakovlev, Vladimir; Mereuta, Alexandru; Lyytikäinen, Jari; Caliman, Andrei; Volet, Nicolas; Okhotnikov, Oleg G; Kapon, Eli

    2014-12-01

    We report for the first time on the performance of 1300 nm waveband semiconductor disc lasers (SDLs) with wafer fused gain mirrors that implement intracavity diamond and flip-chip heat dissipation schemes based on the same gain material. With a new type of gain mirror structure, maximum output power values reach 7.1 W with intracavity diamond gain mirrors and 5.6 W with flip-chip gain mirrors, using a pump spot diameter of 300 µm, exhibiting a beam quality factor M(2)< 1.25 in the full operation range. These results confirm previously published theoretical modeling of these types of SDLs. PMID:25606874

  1. Monolithic hybrid mode-locked 1. 3. mu. m semiconductor lasers

    SciTech Connect

    Morton, P.A.; Bowers, J.E. ); Koszi, L.A.; Soler, M.; Lopata, J.; Wilt, D.P. )

    1990-01-08

    We describe the first results of hybrid mode locking combining both active and passive mode locking of a semiconductor laser. These functions are integrated into a monolithic device with a 1.3 {mu}m GaInAsP gain region, an active waveguide, and a saturable absorber. The devices have low threshold currents, and exhibit hysteresis in their light/current characteristics. The long integrated waveguides allow mode locking at a repetition rate of 15 GHz without the need for an external cavity. Pulse widths as short as 1.4 ps have been demonstrated using the combined effects of active and passive mode locking.

  2. Semiconductor laser having a non-absorbing passive region with beam guiding

    NASA Technical Reports Server (NTRS)

    Botez, Dan (Inventor)

    1986-01-01

    A laser comprises a semiconductor body having a pair of end faces and including an active region comprising adjacent active and guide layers which is spaced a distance from the end face and a passive region comprising adjacent non-absorbing guide and mode control layers which extends between the active region and the end face. The combination of the guide and mode control layers provides a weak positive index waveguide in the lateral direction thereby providing lateral mode control in the passive region between the active region and the end face.

  3. Superfocusing of high-M2 semiconductor laser beams: experimental demonstration

    NASA Astrophysics Data System (ADS)

    Sokolovskii, G. S.; Melissinaki, V.; Dudelev, V. V.; Losev, S. N.; Soboleva, K. K.; Kolykhalova, E. D.; Deryagin, A. G.; Kuchinskii, V. I.; Viktorov, Evgeny A.; Farsari, M.; Sibbett, W.; Rafailov, E. U.

    2014-05-01

    The focusing of multimode laser diode beams is probably the most significant problem that hinders the expansion of the high-power semiconductor lasers in many spatially-demanding applications. Generally, the `quality' of laser beams is characterized by so-called `beam propagation parameter' M2, which is defined as the ratio of the divergence of the laser beam to that of a diffraction-limited counterpart. Therefore, M2 determines the ratio of the beam focal-spot size to that of the `ideal' Gaussian beam focused by the same optical system. Typically, M2 takes the value of 20-50 for high-power broad-stripe laser diodes thus making the focal-spot 1-2 orders of magnitude larger than the diffraction limit. The idea of `superfocusing' for high-M2 beams relies on a technique developed for the generation of Bessel beams from laser diodes using a cone-shaped lens (axicon). With traditional focusing of multimode radiation, different curvatures of the wavefronts of the various constituent modes lead to a shift of their focal points along the optical axis that in turn implies larger focal-spot sizes with correspondingly increased values of M2. In contrast, the generation of a Bessel-type beam with an axicon relies on `self-interference' of each mode thus eliminating the underlying reason for an increase in the focal-spot size. For an experimental demonstration of the proposed technique, we used a fiber-coupled laser diode with M2 below 20 and an emission wavelength in ~1μm range. Utilization of the axicons with apex angle of 140deg, made by direct laser writing on a fiber tip, enabled the demonstration of an order of magnitude decrease of the focal-spot size compared to that achievable using an `ideal' lens of unity numerical aperture.

  4. Towards high power flip-chip long-wavelength semiconductor disk lasers

    NASA Astrophysics Data System (ADS)

    Rantamaki, A.; Saarinen, E.; Lyytikäinen, J.; Kontio, J.; Heikkinen, J.; Lahtonen, K.; Valden, M.; Okhotnikov, O.

    2015-03-01

    Optically pumped semiconductor disk lasers (SDLs) are presented with emphasis on wafer bonding InP-based active regions with GaAs-based distributed Bragg reflectors (DBRs) and reducing the number of required layer pairs in the DBR. The wafer bonding is performed at a relatively low temperature of 200 °C utilizing transparent intermediate bonding layers. The reflectivity of the semiconductor DBR section is enhanced by finishing the DBR with a thin low refractive index layer and a highly reflecting metal layer. Such a design enables considerably thinner mirror structures than the conventional design, where the semiconductor DBR is finished with mere metal layers. In addition, a 90 nm thick Al2O3 layer is shown to produce negligible increase in the thermal resistance of the SDL. Furthermore, a flip-chip SDL with a GaAs/AlAs-Al2O3-Al mirror is demonstrated with watt-level output power at the wavelength of 1.32 μm. The properties and future improvement issues for flip-chip SDLs emitting at 1.3-1.6 μm are also discussed.

  5. Efficient holmium:yttrium lithium fluoride laser longitudinally pumped by a semiconductor laser array

    NASA Technical Reports Server (NTRS)

    Hemmati, H.

    1987-01-01

    Optical pumping of a holmium:yttrium lithium floride (Ho:YLF) crystal with a 790-nm continuous-wave diode-laser array has generated 56 mW of 2.1-micron laser radiation with an optical-to-optical conversion slope efficiency of 33 percent while the crystal temperature is held at 77 K. The lasing threshold occurs at 7 mW of input power, and laser operation continues up to a crystal temperature of 124 K.

  6. Square-wave switching by crossed-polarization gain modulation in vertical-cavity semiconductor lasers

    SciTech Connect

    Mulet, J.; Giudici, M.; Javaloyes, J.; Balle, S.

    2007-10-15

    We study experimentally and theoretically the effects of crossed-polarization reinjection (XPR) on the output characteristics of a vertical-cavity semiconductor laser. We find a set of parameters values for which each polarization component develops a square-wave modulation at a period close to twice the reinjection delay. We analyze the regularity of this modulation in terms of the laser pumping current and of the reinjection level. These observations are numerically reproduced within the spin-flip model modified to account for XPR. In particular, the degradation of the square-wave switching is linked to the finite value of the spin-flip rate, and it occurs when the current approaches the boundaries of polarization bistability.

  7. Selection of modes in transverse-mode waveguides for semiconductor lasers based on asymmetric heterostructures

    SciTech Connect

    Slipchenko, S. O. Bondarev, A. D.; Vinokurov, D. A.; Nikolaev, D. N.; Fetisova, N. V.; Sokolova, Z. N.; Pikhtin, N. A.; Tarasov, I. S.

    2009-01-15

    Asymmetric Al{sub 0.3}Ga{sub 0.7}As/GaAs/InGaAs heterostructures with a broadened waveguide produced by the method of MOCVD epitaxy are studied. It is established that the precision shift of the active region to one of the cladding layers ensures the generation of the chosen mode of high order in the transverse broadened waveguide. It is experimentally established that this shift brings about an increase in internal optical losses and a decrease in the internal quantum efficiency of stimulated emission. It is shown experimentally that the shift of the active region to the n-type cladding layer governs the sublinear form of the power-current characteristic for semiconductor lasers; in the case of a shift of the active region towards the p-type cladding layer, the laser diodes demonstrated a linear dependence of optical power on the pump current in the entire range of pump currents.

  8. Supercontinuum growth in a highly nonlinear fiber with a low-coherence semiconductor laser diode

    NASA Astrophysics Data System (ADS)

    Abeeluck, A. K.; Headley, C.

    2004-11-01

    A low-coherence, amplified, cw semiconductor laser diode is used as a pump to demonstrate supercontinuum (SC) generation in a highly nonlinear, dispersion-shifted fiber (HNLF). At a launch power of 1.6W into the anomalous-dispersion regime of 5km of HNLF, a SC extending from 1230nm to greater than 1770nm is achieved. The SC grows through the seeding effect of modulation instability that also converts the cw beam into short pulses so that subsequent spectral broadening becomes similar to pumping with pulsed laser sources. The experimental data show the manifestation of soliton self-frequency shift associated with a Stokes band as the launch power is increased. Amplification of the continuum noise with respect to the cw pump is also reported.

  9. Modeling of Millimeter-Wave Modulation Characteristics of Semiconductor Lasers under Strong Optical Feedback

    PubMed Central

    Bakry, Ahmed

    2014-01-01

    This paper presents modeling and simulation on the characteristics of semiconductor laser modulated within a strong optical feedback (OFB-)induced photon-photon resonance over a passband of millimeter (mm) frequencies. Continuous wave (CW) operation of the laser under strong OFB is required to achieve the photon-photon resonance in the mm-wave band. The simulated time-domain characteristics of modulation include the waveforms of the intensity and frequency chirp as well as the associated distortions of the modulated mm-wave signal. The frequency domain characteristics include the intensity modulation (IM) and frequency modulation (FM) responses in addition to the associated relative intensity noise (RIN). The signal characteristics under modulations with both single and two mm-frequencies are considered. The harmonic distortion and the third order intermodulation distortion (IMD3) are examined and the spurious free dynamic range (SFDR) is calculated. PMID:25383381

  10. The rule of bias current of semiconductor laser in chaos communications

    NASA Astrophysics Data System (ADS)

    Younis, Y. Th.; Musa, Salam K.; Abdalah, S. F.; Ahmed, Ahmad K.; Meucci, R.; Al Naimee, K. A.

    The dynamics of chaotic behavior of semiconductor laser diode with optical feedback from single mode fiber loop mirror has been experimentally studied. In the represented configuration the feedback strength was constant while the control parameter with laser injection current was variable, we found a wide range of optical intensity oscillation dynamics such as limit cycles, quasiperiodic and chaos oscillations. These dynamics were analyzed by time series and their extracted FFT power spectrums, phase diagrams (attractors), inter-spike intervals (ISI), these measurements enhanced by bifurcation diagram which clarified the chaotic regimes. Efficient bandwidth of chaotic signals has been calculated and observed to be increased with injection current. The complexity of chaotic system was measured by Shannon's entropy function.

  11. Theoretical analysis of an optoelectronic oscillator based on a directly modulated semiconductor laser

    NASA Astrophysics Data System (ADS)

    Cho, Jun-Hyung; Heo, Seo Weon; Sung, Hyuk-Kee

    2016-05-01

    We numerically simulated the performance of an optoelectronic oscillator (OEO) based on a directly modulated (DM) semiconductor laser. The standard coupled rate equations were used to describe the DM-OEO modulation process. A rate-equation-based analysis is a means of analyzing OEO performance that is a variation of the method used to assess standard OEOs that employ external modulators. We modeled an OEO with an open-loop response and calculated the oscillation threshold gain and amplitude of the DM-OEO as functions of the DC bias current. By using this method, we were able to optimize OEO operation conditions for a given laser DC bias level in both gain- and amplitude-limited operating environments.

  12. Compact, temperature-stable multi-gigahertz passively modelocked semiconductor disk laser

    NASA Astrophysics Data System (ADS)

    Song, Yan-Rong; Guoyu, He-Yang; Zhang, Peng; Tian, Jin-Rong

    2015-08-01

    We present a compact passively mode-locked semiconductor disk laser at 1045 nm. The gain chip without any post processing consists of 16 compressively strained InGaAs symmetrical step quantum wells in the active region. 3-GHz repetition rate, 4.9-ps pulse duration, and 30-mW average output power are obtained with 1.4 W of 808-nm incident pump power. The temperature stability of the laser is demonstrated to have an ideal shift rate of 0.035 nm/K of the lasing wavelength. Project supported by the National Natural Science Foundation of China (Grant No. 61177047) and the Key Project of the National Natural Science Foundation of China (Grant No. 61235010).

  13. Development of A Semiconductor Laser Based High Temperature Fine Thermal Energy Source in an Optical Fiber Tip for Clinical Applications

    NASA Astrophysics Data System (ADS)

    Fujimoto, Takahiro; Imai, Yusuke; Tei, Kazuyoku; Yamaguchi, Shigeru

    2013-05-01

    A new technique for generating high temperatures on the surface of an optical fiber is developed for medical applications using lower-power semiconductor lasers with output powers lower than 10 W. Using a power level of 4-6 W semiconductor laser with a pulse duration of 180 ms at a wavelength of 980 nm, a laser-coupled fiber tip was once processed to contain a certain amount of Ti with a depth of 100 µm from the tip surface so that the laser energy could be efficiently absorbed to be transferred to thermal energy. With consecutive laser pulse irradiation, the tip processed fiber (TP fiber) served as a reproducible fine heat source whose temperature was measured to be in excess 3100 K based on two-color thermometry. Processing of ceramic and niobium plate, which are hardly ablated with direct low power (6 W) irradiation, was successfully demonstrated by contacting the TP fiber excited with the same power.

  14. Semiconductor ring lasers subject to both on-chip filtered optical feedback and external conventional optical feedback

    NASA Astrophysics Data System (ADS)

    Khoder, Mulham; Van der Sande, Guy; Danckaert, Jan; Verschaffelt, Guy

    2016-05-01

    It is well known that the performance of semiconductor lasers is very sensitive to external optical feedback. This feedback can lead to changes in lasing characteristics and a variety of dynamical effects including chaos and coherence collapse. One way to avoid this external feedback is by using optical isolation, but these isolators and their packaging will increase the cost of the total system. Semiconductor ring lasers nowadays are promising sources in photonic integrated circuits because they do not require cleaved facets or mirrors to form a laser cavity. Recently, some of us proposed to combine semiconductor ring lasers with on chip filtered optical feedback to achieve tunable lasers. The feedback is realized by employing two arrayed waveguide gratings to split/recombine light into different wavelength channels. Semiconductor optical amplifier gates are used to control the feedback strength. In this work, we investigate how such lasers with filtered feedback are influenced by an external conventional optical feedback. The experimental results show intensity fluctuations in the time traces in both the clockwise and counterclockwise directions due to the conventional feedback. We quantify the strength of the conventional feedback induced dynamics be extracting the standard deviation of the intensity fluctuations in the time traces. By using filtered feedback, we can shift the onset of the conventional feedback induced dynamics to larger values of the feedback rate [ Khoder et al, IEEE Photon. Technol. Lett. DOI: 10.1109/LPT.2016.2522184]. The on-chip filtered optical feedback thus makes the semiconductor ring laser less senstive to the effect of (long) conventional optical feedback. We think these conclusions can be extended to other types of lasers.

  15. Improving the chaos bandwidth of a semiconductor laser with phase-conjugate feedback

    NASA Astrophysics Data System (ADS)

    Mercier, Émeric; Wolfersberger, Delphine; Sciamanna, Marc

    2016-04-01

    Common applications using optical chaos in a semiconductor laser include, among others, random number generation and chaos-encrypted communications. They rely on chaos of high dimension with a large bandwidth and a high entropy growth rate to achieve good results. Optical chaos from a semiconductor laser with conventional optical feedback (COF) is typically used as the primary source of chaos. Additional enhancing techniques are used to enlarge the chaos bandwidth. In this contribution, we show experimentally how using phase-conjugate feedback (PCF) can naturally produce a chaos of higher bandwidth than COF. PCF is an alternative to COF which consists of feeding the conjugate of the optical output back into the laser cavity, with a time-delay. Thanks to an oscilloscope with a fast sampling rate, and a large bandwidth, we were able to measure and observe the time-resolved frequency dynamics with a good precision. In the regime of low-frequency fluctuations (LFF), where dropouts of optical power occur randomly, we were able to compare the difference in dynamics before and after a dropout, for PCF and COF. In the range of attainable reflectivities, we measured a bandwidth increase of up to 27 % with PCF when compared to COF. Interestingly, we found that high-frequency dynamics are enabled before dropouts in PCF, where it was theoretically shown that the system jumps between destabilized self-pulsing states at harmonics of the external-cavity frequency, the so-called external-cavity modes (ECMs). This observation tends to confirm that ECMs in PCF are indeed fundamentally different than ECMs in COF, where they are simple steady-states. Finally, we believe that the enhancing techniques used with COF could also be used with PCF to obtain even wider chaotic bandwidths. These results could lead to studies about the dimension and the entropy growth rate of chaos from a laser diode with PCF.

  16. Pulsed laser ablation of binary semiconductors: mechanisms of vaporisation and cluster formation

    SciTech Connect

    Bulgakov, A V; Evtushenko, A B; Shukhov, Yu G; Ozerov, I; Marin, W

    2010-12-29

    Formation of small clusters during pulsed ablation of two binary semiconductors, zinc oxide and indium phosphide, in vacuum by UV, visible, and IR laser radiation is comparatively studied. The irradiation conditions favourable for generation of neutral and charged Zn{sub n}O{sub m} and In{sub n}P{sub m} clusters of different stoichiometry in the ablation products are found. The size and composition of the clusters, their expansion dynamics and reactivity are analysed by time-of-flight mass spectrometry. A particular attention is paid to the mechanisms of ZnO and InP ablation as a function of laser fluence, with the use of different ablation models. It is established that ZnO evapourates congruently in a wide range of irradiation conditions, while InP ablation leads to enrichment of the target surface with indium. It is shown that this radically different character of semiconductor ablation determines the composition of the nanostructures formed: zinc oxide clusters are mainly stoichiometric, whereas In{sub n}P{sub m} particles are significantly enriched with indium. (photonics and nanotechnology)

  17. Detectable distance calculations for a visual navigation system using a scanning semiconductor laser with electronic pumping.

    PubMed

    Kaloshin, G A; Shishkin, S A

    2011-07-10

    Results of detectable distance calculations for a visual navigation system based on a scanning semiconductor laser with electronic pumping (SSLEP) are presented. A semiconductor crystal in the laser is pumped with an electron beam, which is scanned across the crystal in the television-frame scan mode. The navigation system forms three orientation sectors with radiation wavelengths λ=0.52, 0.57, and 0.63 μm. Herein, calculations of energetic characteristics of output radiation are performed for the navigation system described above. The calculations were performed using the Range software package, which considers microphysical and optical characteristics of aerosol and observation path geometry for the case of coastal environment. Finally, comparison of results of the calculations with data obtained in marine and flight experiments is presented. It is demonstrated that minor discrepancies between calculated and measured values of detectable distance are observed in the coastal haze at lower values of meteorological visibility range S(m). As S(m) increases, the discrepancies become significant. PMID:21743551

  18. Influence of kinetic hole filling on the stability of mode-locked semiconductor disk lasers

    NASA Astrophysics Data System (ADS)

    Moloney, Jerome V.; Kilen, Isak; Hader, Jorg; Koch, Stephan W.

    2016-03-01

    Microscopic many-body theory is employed to analyze the mode-locking dynamics of a vertical external-cavity surface-emitting laser with a saturable absorber mirror. The quantum-wells are treated microscopically through the semiconductor Bloch equations and the light field using Maxwell's equations. Higher order correlation effects such as polarization dephasing and carrier relaxation at the second Born level are included and also approximated using effective rates fitted to second-Born-Markov evaluations. The theory is evaluated numerically for vertical external cavity surface emitting lasers with resonant periodic gain media. For given gain, the influence of the loss conditions on the very-short pulse generation in the range above 100 fs is analyzed. Optimized operational parameters are identified. Additionally, the fully microscopic theory at the second Born level is used to carrier out a pump-probe study of the carrier recovery in individual critical components of the VECSEL cavity such as the VECSEL chip itself and semiconductor or graphene saturable absorber mirrors.

  19. Silicon photonics WDM interconnects based on resonant ring modulators and semiconductor mode locked laser

    NASA Astrophysics Data System (ADS)

    Müller, J.; Hauck, J.; Shen, B.; Romero-García, S.; Islamova, E.; Sharif Azadeh, S.; Joshi, S.; Chimot, N.; Moscoso-Mártir, A.; Merget, F.; Lelarge, F.; Witzens, J.

    2015-03-01

    We demonstrate wavelength domain multiplexed (WDM) data transmission with a data rate of 14 Gbps based on optical carrier generation with a single-section semiconductor mode-locked laser (SS-MLL) and modulation with a Silicon Photonics (SiP) resonant ring modulator (RRM). 18 channels are sequentially measured, whereas the best recorded eye diagrams feature signal quality factors (Q-factors) above 7. While optical re-amplification was necessary to maintain the link budgets and therefore system measurements were performed with an erbium doped fiber amplifier (EDFA), preliminary characterization done with a semiconductor optical amplifier (SOA) indicates compatibility with the latter pending the integration of an additional optical filter to select a subset of carriers and prevent SOA saturation. A systematic analysis of the relative intensity noise (RIN) of isolated comb lines and of signal Q-factors indicates that the link is primarily limited by amplified spontaneous emission (ASE) from the EDFA rather than laser RIN. Measured RIN for single comb components is below -120 dBc/Hz in the range from 7 MHz to 4 GHz and drops to the shot noise level at higher frequencies.

  20. 1.3 µm Raman-bismuth fiber amplifier pumped by semiconductor disk laser.

    PubMed

    Chamorovskiy, A; Rautiainen, J; Rantamäki, A; Golant, K M; Okhotnikov, O G

    2011-03-28

    A hybrid Raman-bismuth fiber amplifier pumped in co-propagation configuration by a single 1.22 µm semiconductor disk laser is presented. The unique attribute of this dual-gain system is that both amplifiers require the pump source with the same wavelength because pump-Stokes spectral shift in 1.3 µm Raman amplifier and pump-gain bandwidth separation in 1.3 µm bismuth fiber amplifier have the same value. Residual pump power at the output of Raman amplifier in this scheme is efficiently consumed by bismuth-doped fiber thus increasing the overall conversion efficiency. The small-signal gain of 18 dB at 1.3 W of pump power has been achieved for hybrid scheme which is by 9 dB higher as compared with isolated Raman amplifier without bismuth fiber. Low noise performance of pump semiconductor disk laser with RIN of -150 dB/Hz combined with nearly diffraction-limited beam quality and Watt-level output powers allows for efficient core-pumping of a single-mode fiber amplifier systems and opens up new opportunities for amplification in O-band spectral range. PMID:21451671

  1. Optical Communication with Semiconductor Laser Diode. Interim Progress Report. Ph.D. Thesis

    NASA Technical Reports Server (NTRS)

    Davidson, Frederic; Sun, Xiaoli

    1989-01-01

    Theoretical and experimental performance limits of a free-space direct detection optical communication system were studied using a semiconductor laser diode as the optical transmitter and a silicon avalanche photodiode (APD) as the receiver photodetector. Optical systems using these components are under consideration as replacements for microwave satellite communication links. Optical pulse position modulation (PPM) was chosen as the signal format. An experimental system was constructed that used an aluminum gallium arsenide semiconductor laser diode as the transmitter and a silicon avalanche photodiode photodetector. The system used Q=4 PPM signaling at a source data rate of 25 megabits per second. The PPM signal format requires regeneration of PPM slot clock and word clock waveforms in the receiver. A nearly exact computational procedure was developed to compute receiver bit error rate without using the Gaussion approximation. A transition detector slot clock recovery system using a phase lock loop was developed and implemented. A novel word clock recovery system was also developed. It was found that the results of the nearly exact computational procedure agreed well with actual measurements of receiver performance. The receiver sensitivity achieved was the closest to the quantum limit yet reported for an optical communication system of this type.

  2. Selective mode coupling in microring resonators for single mode semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Arbabi, Amir

    Single mode semiconductor laser diodes have many applications in optical communications, metrology and sensing. Edge-emitting single mode lasers commonly use distributed feedback structures, or narrowband reflectors such as distributed Bragg reflectors (DBRs) and sampled grating distributed Bragg reflectors (SGDBRs). Compact, narrowband reflectors with high reflectivities are of interest to replace the commonly used DBRs and SGDBRs. This thesis presents our work on the simulation, design, fabrication, and characterization of devices operating based on the coupling of degenerate modes of a microring resonator, and investigation of the possibility of using them for improving the performance of laser diodes. In particular, we demonstrate a new type of compact, narrowband, on-chip reflector realized by selectively coupling degenerate modes of a microring resonator. For the simulation and design of reflective microring resonators, a fast and accurate analysis method is required. Conventional numerical methods for solving Maxwell's equations such as the finite difference time domain and the finite element method (FEM) provide accurate results but are computationally intense and are not suitable for the design of large 3D structures. We formulated a set of coupled mode equations that, combined with 2D FEM simulations, can provide a fast and accurate tool for the modeling and design of reflective microrings. We developed fabrication processing recipes and fabricated passive reflective microrings on silicon substrates with a silicon nitride core and silicon dioxide cladding. Narrowband single wavelength reflectors were realized which are 70 times smaller than a conventional DBR with the same bandwidth. Compared to the conventional DBR, they have faster roll-off, and no side modes. The smaller footprint saves real estate, reduces tuning power and makes these devices attractive as in-line mirrors for low threshold narrow linewidth laser diodes. Self-heating caused by material

  3. 2.6 W optically-pumped semiconductor disk laser operating at 1.57-microm using wafer fusion.

    PubMed

    Rautiainen, Jussi; Lyytikäinen, Jari; Sirbu, Alexei; Mereuta, Alexandru; Caliman, Andrei; Kapon, Eli; Okhotnikov, Oleg G

    2008-12-22

    We report a wafer fused high power optically pumped semiconductor disk laser incorporating InP-based active medium fused to a GaAs/AlGaAs distributed Bragg reflector. A record value of over 2.6 W of output power in a spectral range around 1.57 microm was demonstrated, revealing the essential advantage of the wafer fusing technique over monolithically-grown all-InP-based structures. The presented approach allows for integration of lattice-mismatched compounds, quantum-well and quantum-dot based media. This would provide convenient means for extending the wavelength range of semiconductor disk lasers. PMID:19104620

  4. Vertical cavity surface-emitting semiconductor lasers with injection laser pumping

    NASA Astrophysics Data System (ADS)

    McDaniel, D. L., Jr.; McInerney, J. G.; Raja, M. Y. A.; Schaus, C. F.; Brueck, S. R. J.

    1990-05-01

    Continuous-wave GaAs/GaAlAs edge-emitting diode lasers were used to pump GaAs/AlGaAs and InGaAs/AlGaAs vertical cavity surface-emitting lasers (VCSELs) with resonant periodic gain (RPG) at room temperature. Pump threshold as low as 11 mW, output powers as high as 27 mW at 850 nm, and external differential quantum efficiencies of about 70 percent were observed in GaAs/AlGaAs surface -emitters; spectral brightness 22 times that of the pump laser was also observed. Output powers as high as 85 mW at 950 nm and differential quantum efficiencies of up to 58 percent were recorded for the InGaAs surface-emitting laser. This is the highest quasi-CW output power ever reported for any RPG VCSEL, and the first time such a device has been pumped using an injection laser diode.

  5. Highly reliable 198-nm light source for semiconductor inspection based on dual fiber lasers

    NASA Astrophysics Data System (ADS)

    Imai, Shinichi; Matsuki, Kazuto; Kikuiri, Nobutaka; Takayama, Katsuhiko; Iwase, Osamu; Urata, Yoshiharu; Shinozaki, Tatsuya; Wada, Yoshio; Wada, Satoshi

    2010-02-01

    Highly reliable DUV light sources are required for semiconductor applications such as a photomask inspection. The mask inspection for the advanced devices requires the UV lightning wavelength beyond 200 nm. By use of dual fiber lasers as fundamental light sources and the multi-wavelength conversion we have constructed a light source of 198nm with more than 100 mW. The first laser is Yb doped fiber laser with the wavelength of 1064 nm; the second is Er doped fiber laser with 1560 nm. To obtain the robustness and to simplify the configuration, the fundamental lights are run in the pulsed operation and all wavelength conversions are made in single-pass scheme. The PRFs of more than 2 MHz are chosen as an alternative of a CW light source; such a high PRF light is equivalent to CW light for inspection cameras. The light source is operated described as follows. Automatic weekly maintenance within an hour is done if it is required; automatic monthly maintenance within 4 hours is done on fixed date per month; manufacturer's maintenance is done every 6 month. Now this 198 nm light sources are equipped in the leading edge photomask inspection machines.

  6. Purity of the single frequency mode of a hybrid semiconductor-fiber laser.

    PubMed

    Wahbeh, Mamoun; Kashyap, Raman

    2015-06-15

    The penalty of extending the cavity length of a laser diode when seeking a linewidth reduction is normally revealed by poor side mode suppression, which prevents the laser from operating purely in a single mode of the external cavity. A hybrid laser, based on a C-band semiconductor optical amplifier combined with a long erbium doped fiber external cavity, is carefully engineered to operate with high spectral purity and outstanding stability. For the first time, a side-mode suppression ratio of ≥42 dB, measured at a resolution of 1.16 pm (149 MHz) at all intra-cavity powers above the lasing threshold, is reported. The output power at the peak lasing wavelength is 13.3 dBm. Also, the ability to lock such a hybrid laser to a particular external-cavity mode is realized for the first time. Excluding the effect of mechanical and thermal drifts on the cavity length, the long-term frequency stability is demonstrated to be within ± 11 Hz while the long-term linewidth is 2.26 kHz, measured using the self-beating technique under free running conditions. PMID:26193582

  7. Efficient power extraction in surface-emitting semiconductor lasers using graded photonic heterostructures.

    PubMed

    Xu, Gangyi; Colombelli, Raffaele; Khanna, Suraj P; Belarouci, Ali; Letartre, Xavier; Li, Lianhe; Linfield, Edmund H; Davies, A Giles; Beere, Harvey E; Ritchie, David A

    2012-01-01

    Symmetric and antisymmetric band-edge modes exist in distributed feedback surface-emitting semiconductor lasers, with the dominant difference being the radiation loss. Devices generally operate on the low-loss antisymmetric modes, although the power extraction efficiency is low. Here we develop graded photonic heterostructures, which localize the symmetric mode in the device centre and confine the antisymmetric modes close to the laser facet. This modal spatial separation is combined with absorbing boundaries to increase the antisymmetric mode loss, and force device operation on the symmetric mode, with elevated radiation efficiency. Application of this concept to terahertz quantum cascade lasers leads to record-high peak-power surface emission (>100 mW) and differential efficiencies (230 mW A(-1)), together with low-divergence, single-lobed emission patterns, and is also applicable to continuous-wave operation. Such flexible tuning of the radiation loss using graded photonic heterostructures, with only a minimal influence on threshold current, is highly desirable for optimizing second-order distributed feedback lasers. PMID:22805559

  8. Quantifying the statistical complexity of low-frequency fluctuations in semiconductor lasers with optical feedback

    SciTech Connect

    Tiana-Alsina, J.; Torrent, M. C.; Masoller, C.; Garcia-Ojalvo, J.

    2010-07-15

    Low-frequency fluctuations (LFFs) represent a dynamical instability that occurs in semiconductor lasers when they are operated near the lasing threshold and subject to moderate optical feedback. LFFs consist of sudden power dropouts followed by gradual, stepwise recoveries. We analyze experimental time series of intensity dropouts and quantify the complexity of the underlying dynamics employing two tools from information theory, namely, Shannon's entropy and the Martin, Plastino, and Rosso statistical complexity measure. These measures are computed using a method based on ordinal patterns, by which the relative length and ordering of consecutive interdropout intervals (i.e., the time intervals between consecutive intensity dropouts) are analyzed, disregarding the precise timing of the dropouts and the absolute durations of the interdropout intervals. We show that this methodology is suitable for quantifying subtle characteristics of the LFFs, and in particular the transition to fully developed chaos that takes place when the laser's pump current is increased. Our method shows that the statistical complexity of the laser does not increase continuously with the pump current, but levels off before reaching the coherence collapse regime. This behavior coincides with that of the first- and second-order correlations of the interdropout intervals, suggesting that these correlations, and not the chaotic behavior, are what determine the level of complexity of the laser's dynamics. These results hold for two different dynamical regimes, namely, sustained LFFs and coexistence between LFFs and steady-state emission.

  9. Ultra broadband microwave frequency combs generated by an optical pulse-injected semiconductor laser.

    PubMed

    Juan, Yu-Shan; Lin, Fan-Yi

    2009-10-12

    We have demonstrated and characterized the generation of ultra broadband microwave frequency combs with an optical pulse-injected semiconductor laser. Through optical pulse injection, the microwave frequency combs generated in the slave laser (SL) have bandwidths greater than 20 GHz within a +/-5 dB amplitude variation, which is almost 3-fold of the 7 GHz relaxation oscillation frequency of the laser used. The line spacing of the comb is tunable from 990 MHz to 2.6 GHz, determined by the repetition frequency of the injection optical pulses produced by the master laser (ML) with optoelectronic feedback. At an offset frequency of 200 kHz, a single sideband (SSB) phase noise of -60 dBc/kHz (-90 dBc/Hz estimated) in the 1(st) harmonic is measured while a noise suppression relative to the injected regular pulsing state of the ML of more than 25 dB in the 17(th) harmonic is achieved. A pulsewidth of 29 ps and a ms timing jitter of 18.7 ps are obtained in the time domain for the microwave frequency comb generated. Further stabilization is realized by modulating the ML at the fundamental frequency of the injected regular pulsing state. The feasibility of utilizing the generated microwave frequency comb in frequency conversion and signal broadcasting is also explored. The conversion gain of each channel increases linearly as the signal power increases with a ratio of about 0.81 dB/dBm. PMID:20372590

  10. Axial-mode instability in tunable external-cavity semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Zorabedian, Paul

    1994-07-01

    The axial-mode instability of a tunable external-cavity semiconductor laser was studied experimentally and theoretically. Optical and radio-frequency (rf) spectra and time-domain traces show the laser output in progressive stages of instability. The optical sidemode ratio was used to experimentally characterize the wavelength and current dependencies of the instability. Measurements show a strong tendency for the sidemode ratio to degrade when the laser was tuned within wavelength bands occurring at the periodicity of the laser diode mode spacing. The probability of instability also increased with injection current. Analysis of the single-mode strong feedback rate equations shows that stability of an external-cavity mode is determined by the sign of the chirp reduction factor. A model for the physical origin of instability is provided. Calculations show that for facet reflectivities above a threshold value dependent on the external feedback level and the linewidth broadening factor, unstable and stable axial modes coexist in wavelength regions whose locations agree with regions where sidemode ratio degradation is observed. The stability boundary at which unstable axial modes appear is shown as a surface in the parameter space of facet reflectivity, feedback level, and linewidth broadening factor.

  11. Nanoscale Photoconductivity Imaging of Thin-film Semiconductors by Laser-assisted Microwave Impedance Microscopy

    NASA Astrophysics Data System (ADS)

    Chu, Zhaodong; Wu, Di; Ren, Yuan; Yang, Seungcheol; Sun, Liuyang; Li, Xiaoqin; Lai, Keji

    The photo-response of semiconductors is usually studied by detecting the photocurrent across source-drain electrodes under light illumination. By integrating the microwave impedance microscopy (MIM) technique with focused-laser stimulation, we are able to perform the real-space photoconductivity mapping of photo-sensitive materials without the need of patterning contact electrodes. Here, we report the MIM results of various thin-film materials, such as In2Se3 nano-sheets and transition metal dichalcogenides (TMD) flakes, illuminated by laser beams of different wavelengths in the ambient condition. With no or below-gap illumination, the samples were highly resistive, as indicated by the low MIM signals. The MIM contrast emerges under above-gap light and increases as increasing laser intensity, which clearly demonstrates the local imaging of photoconductivity rather than the transport photocurrent. Interestingly, clear domain structures with mesoscopic length scales were seen in the data due to the coexistence of multiple phases in In2Se3. The unique combination of MIM and laser stimulation thus provides a new direction to explore the microscopic origin of various light-driven phenomena in complex systems. We gratefully acknowledge financial support from NSF.

  12. Pulsed Laser System to Simulate Effects of Cosmic Rays in Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Aveline, David C.; Adell, Philippe C.; Allen, Gregory R.; Guertin, Steven M.; McClure, Steven S.

    2011-01-01

    Spaceflight system electronic devices must survive a wide range of radiation environments with various particle types including energetic protons, electrons, gamma rays, x-rays, and heavy ions. High-energy charged particles such as heavy ions can pass straight through a semiconductor material and interact with a charge-sensitive region, generating a significant amount of charge (electron-hole pairs) along their tracks. These excess charges can damage the device, and the response can range from temporary perturbations to permanent changes in the state or performance. These phenomena are called single event effects (SEE). Before application in flight systems, electronic parts need to be qualified and tested for performance and radiation sensitivity. Typically, their susceptibility to SEE is tested by exposure to an ion beam from a particle accelerator. At such facilities, the device under test (DUT) is irradiated with large beams so there is no fine resolution to investigate particular regions of sensitivity on the parts. While it is the most reliable approach for radiation qualification, these evaluations are time consuming and costly. There is always a need for new cost-efficient strategies to complement accelerator testing: pulsed lasers provide such a solution. Pulsed laser light can be utilized to simulate heavy ion effects with the advantage of being able to localize the sensitive region of an integrated circuit. Generally, a focused laser beam of approximately picosecond pulse duration is used to generate carrier density in the semiconductor device. During irradiation, the laser pulse is absorbed by the electronic medium with a wavelength selected accordingly by the user, and the laser energy can ionize and simulate SEE as would occur in space. With a tightly focused near infrared (NIR) laser beam, the beam waist of about a micrometer can be achieved, and additional scanning techniques are able to yield submicron resolution. This feature allows mapping of all

  13. Microscopic Foundation and Simulation of Coupled Carrier-Temperature Diffusions in Semiconductor Lasers

    NASA Technical Reports Server (NTRS)

    Li, J.; Ning, Cun-Zheng; Biegel, Bryan A. (Technical Monitor)

    2002-01-01

    A typical semiconductor-based optoelectronic device, such as a diode laser, consists of three subsystems: an optical field, an electron-hole plasma (EHP), and a host crystal lattice. The physics of such a device involves the interplay of optical, electrical and thermal processes. A proper description of such a device requires that all three processes are treated on equal footing and in a self-consistent fashion. Furthermore, since a semiconductor laser has intrinsic spatial inhomogeneity, such a self-consistency naturally leads to a set of partial differential equations in space and time. There is a significant lacking of research interest and results on the transport aspects of optical devices in the literature with only a few exceptions. Even the most important carrier diffusion coefficient has not been properly derived and studied so far for optically excited plasma, while most of the work adopted results from electronics community where heavily doped semiconductors with mainly one type of carriers are dealt with. The corresponding transport equation for plasma energy or temperature has received even less attention. In this talk we describe our recent results on such a self-consistent derivation of temperature and carrier-density diffusion equations coupled with the lasing process. Starting from the microscopic semiconductor Bloch equations (SBEs) including the Boltzmann transport terms in the distribution function equations for electrons and holes, we derived a closed set of diffusion equations for carrier densities and temperatures with self-consistent coupling to Maxwell's equation and to an effective optical polarization equation. The coherent many-body effects are included within the screened Hartree-Fock approximation, while scatterings are treated within the second Born approximation including both the in- and out-scatterings. Microscopic expressions for electron-hole (e-h) and carrier-LO (c-LO) phonon scatterings are directly used to derive the momentum

  14. 355nm DPSS UV laser micro-processing for the semiconductor and electronics industry

    NASA Astrophysics Data System (ADS)

    Zhang, Fei; Duan, Jun; Zeng, XiaoYan; Li, XiangYou

    2010-02-01

    During the last decade, diode-pumped solid state (DPSS) lasers have been gained wider application in semiconductor and electronics industry due to the advantages of high efficiency, low operating cost, good beam quality and flexibility as well as miniature size. Now, 355nm DPSS UV laser has increasingly been adopted in micro-processing application for both semiconductor and electronics industry where both micro-processing quality and precision of high-density, multilayer and multi-material components are in a strong demand. Our works on typical applications of 355nm DPSS UV laser micro-processing both semiconducting and electronic materials have been introduced in this paper, including drilling (200μm blind holes in 4-layer FPC), cutting (coverlay, CCL, FPC, 0.6mm silicon), and etching (ITO-glass). The effects of the processing parameters (pulse energy, frequency, peak power, scanning speed and focal plane position as well as processing modes) on the micro-processing quality and precision have been investigated and analyzed. By optimizing the processing parameters, the blind drilling depth to the second copper layer can be controlled accurately and the roughness Sq 1.33μm on the second copper surface can be achieved. A high quality and size precision (position precision 20μm) cutting edge without charring, burrs and micro-cracks as well as with very small heat affected zone (HAZ) can be also obtained. When etching function film, the etching width is less than 20 micron, and the etching speed is more than 500mm/s.

  15. Method to determine the position-dependant metal correction factor for dose-rate equivalent laser testing of semiconductor devices

    SciTech Connect

    Horn, Kevin M.

    2013-07-09

    A method reconstructs the charge collection from regions beneath opaque metallization of a semiconductor device, as determined from focused laser charge collection response images, and thereby derives a dose-rate dependent correction factor for subsequent broad-area, dose-rate equivalent, laser measurements. The position- and dose-rate dependencies of the charge-collection magnitude of the device are determined empirically and can be combined with a digital reconstruction methodology to derive an accurate metal-correction factor that permits subsequent absolute dose-rate response measurements to be derived from laser measurements alone. Broad-area laser dose-rate testing can thereby be used to accurately determine the peak transient current, dose-rate response of semiconductor devices to penetrating electron, gamma- and x-ray irradiation.

  16. Laser Cooling and Trapping of Neutral Mercury Atoms Using an Optically-Pumped External-Cavity Semiconductor Laser

    NASA Astrophysics Data System (ADS)

    Paul, Justin; Lytle, Christian; Jones, R. Jason

    2011-05-01

    The level structure of the Hg atom is similar to other alkaline earth-like atoms, offering the possibility to realize an extremely high quality resonance factor (Q) on the ``clock'' transition (1S0- 3P0) when confined in an optical lattice at the Stark-shift free wavelength. A key feature of the Hg system is the reduced uncertainty due to black-body induced Stark shifts, making it an interesting candidate as an optical frequency standard. One challenge to laser-cooling neutral Hg atoms is finding a reliable source for cooling on the 1S0-3 P1 transition at 253.7 nm. We employ an optically pumped semiconductor laser (OPSEL) operating at 1015 nm, whose frequency is quadrupled in two external-cavity doubling stages to generate over 120 mW at 253.7 nm. With this new laser source we have trapped Hg199 from a background vapor in a standard MOT. We trap up to 2 × 106 atoms with a 1/e2 radius of our MOT of ~310 microns, corresponding to a density of 1.28 × 1010 atoms/cm3. We report on the progress of our Hg system and plans for precision lattice-based spectroscopy of the clock transition. Support for this work is supported through the U.S. Air Force Office of Scientific Research (AFOSR) through grant no. FA9550-09-1-0563.

  17. Efficient AlGaAs shallow-homojunction solar cells

    NASA Technical Reports Server (NTRS)

    Gale, R. P.; Fan, J. C. C.; Turner, G. W.; Chapman, R. L.; Pantano, J. V.

    1984-01-01

    Shallow-homojunction n+/p/p+ solar cells with one-sun, AM1 conversion efficiencies as high as 12.9 percent have been fabricated in Al0.2Ga0.8As epitaxial layers grown by organometallic chemical vapor deposition on single-crystal GaAs substrates. For these cells, which have n+ layers thinned by anodic oxidation to about 500 A, the quantum efficiencies in the short-wavelength portion of the spectrum are as high as the best reported for AlGaAs cells with high band-gap window layers.

  18. Rate-equation analysis for the frequency-chirp-to-modulated-power ratio of a semiconductor-diode laser

    SciTech Connect

    Welford, D.R.

    1985-11-01

    An expression for the frequency chirp to modulated power ratio (CPR) is derived from a rate-equation analysis of the small-signal, injection-current modulation in a semiconductor diode laser. The model includes the effect of lateral carrier diffusion across the active region of the laser diode. The modulation-frequency dependence of the CPR is flat from dc to a few hundred megahertz, beyond which it is proportional to the modulation frequency.

  19. A rate equation analysis for the frequency chirp to modulated power ratio of a semiconductor diode laser

    SciTech Connect

    Welford, D.

    1985-11-01

    An expression for the frequency chirp to modulated power ratio (CPR) is derived from a rate equation analysis of the small-signal, injection current modulation in a semiconductor diode laser. The model includes the effect of lateral carrier diffusion across the active region of the laser diode. The modulation frequency dependence of the CPR is flat from dc to a few hundred megahertz, beyond which it is proportional to the modulation frequency.

  20. Semiconductor diode lasers in the canine prostate: laser-tissue interaction

    NASA Astrophysics Data System (ADS)

    Perlmutter, Aaron P.; Muschter, Rolf; Anson, K.; Vargas Stuve, Juan C.; Razvi, Hassan A.

    1995-05-01

    We have studied 810 nm (Diomed, Cambridge England), 950 nm (Diolase, Endocare, Irvine CA), 980 nm (Dornier, Munich Germany), and 1000 nm (Cynosure, Bedford MA) using free beam right angle firing fibers in the canine prostate. Because some lasers only accept specific fibers, and each wavelength has its own divergence properties, standardization of fiber and power density was not possible. Power was studied in increments to the maximum output for each laser. Laser-tissue interaction was studied by video endoscopy during lasing, pathology, and real time interstitial thermometry at 3, 7, and 11 mm deep from the prostatic urethra. We found that using the Dornier Sidefocus fiber at 25 W, 810 nm created a small vaporized cavity surrounded by a zone of necrosis, whereas 980 nm at 25 W caused more necrosis but little vaporization. Irradiation with 950 nm and the Prolase II fiber created deeper lesions at 40 W than 25 W. At 1000 nm with the angle delivery device produced by Cynosure, popcorn with the formation of carbonized cavities occurred at both 25 and 40 W. The lesions were only slightly deeper at the higher wattage. We conclude that the high power diode lasers are capable of producing volume lesions in the prostate. The different wavelengths, fibers and power densities lead to different laser-tissue interaction, and thus each wavelength needs to be considered separately.

  1. Properties of nanocones formed on a surface of semiconductors by laser radiation: quantum confinement effect of electrons, phonons, and excitons.

    PubMed

    Medvid, Artur; Onufrijevs, Pavels; Mychko, Alexander

    2011-01-01

    On the basis of the analysis of experimental results, a two-stage mechanism of nanocones formation on the irradiated surface of semiconductors by Nd:YAG laser is proposed for elementary semiconductors and solid solutions, such as Si, Ge, SiGe, and CdZnTe. Properties observed are explained in the frame of quantum confinement effect. The first stage of the mechanism is characterized by the formation of a thin strained top layer, due to redistribution of point defects in temperature-gradient field induced by laser radiation. The second stage is characterized by mechanical plastic deformation of the stained top layer leading to arising of nanocones, due to selective laser absorption of the top layer. The nanocones formed on the irradiated surface of semiconductors by Nd:YAG laser possessing the properties of 1D graded bandgap have been found for Si, Ge, and SiGe as well, however QD structure in CdTe was observed. The model is confirmed by "blue shift" of bands in photoluminescence spectrum, "red shift" of longitudinal optical line in Raman back scattering spectrum of Ge crystal, appearance of Ge phase in SiGe solid solution after irradiation by the laser at intensity 20 MW/cm2, and non-monotonous dependence of Si crystal micro-hardness as function of the laser intensity. PMID:22060172

  2. Semiconductor devices for optical communications in 1 micron band of wavelength. [gallium indium arsenide phosphide lasers and diodes

    NASA Technical Reports Server (NTRS)

    Suematsu, Y.; Iga, K.

    1980-01-01

    Crystal growth and the characteristics of semiconductor lasers and diodes for the long wavelength band used in optical communications are examined. It is concluded that to utilize the advantages of this band, it is necessary to have a large scale multiple wavelength communication, along with optical cumulative circuits and optical exchangers.

  3. Laser Doppler blood flow complementary metal oxide semiconductor imaging sensor with analog on-chip processing

    SciTech Connect

    Gu Quan; Hayes-Gill, Barrie R.; Morgan, Stephen P

    2008-04-20

    A 4x4 pixel array with analog on-chip processing has been fabricated within a 0.35 {mu}m complementary metal oxide semiconductor process as a prototype sensor for laser Doppler blood flow imaging. At each pixel the bandpass and frequency weighted filters necessary for processing laser Doppler blood flow signals have been designed and fabricated. Because of the space constraints of implementing an accurate {omega}{sup 0.5} filter at the pixel level, this has been approximated using the ''roll off'' of a high-pass filter with a cutoff frequency set at 10 kHz. The sensor has been characterized using a modulated laser source. Fixed pattern noise is present that is demonstrated to be repeatable across the array and can be calibrated. Preliminary blood flow results on a finger before and after occlusion demonstrate that the sensor array provides the potential for a system that can be scaled to a larger number of pixels for blood flow imaging.

  4. Semiconductor-to-metallic phase transition of VO2 by laser excitation

    NASA Astrophysics Data System (ADS)

    Liu, H.; Vasquez, O.; Santiago, V. R.; Diaz, L.; Fernandez, F. E.

    2004-10-01

    VO2 thin films deposited on MgO and fused silica glass substrates were prepared by the pulsed laser deposition (PLD) technique, which shows phase transition (PT) from the monoclinic semiconductor phase to a metallic tetragonal rutile structure at temperatures over 68°C. The observed PT is reversible, showing a typical hysteresis. The PT can also be induced through optical pumping by laser excitation. In this case, it was found that the optically induced PT is ultrafast and passive, but not thermally initiated. In order to understand the PT mechanism, a study of transient holography using degenerate-four-wavemixing (DFWM) measurement was conducted. A Nd:YAG pulsed laser with pulse duration of 30 psec operating at 532 nm was employed as the coherent light source. This showed that the observed transient holography in VO2 thin film is associated with the excited state dynamical process, which essentially causes the structural change, or so-called optically induced PT. The observed extremely large polarizability is believed to relate to the large offset in the potential well minimum between the ground state and excited state. Through an unidentified intermediate state, the transient lattice distortion triggered the structural change.

  5. Chemical reactions at metallic and metal/semiconductor interfaces stimulated by pulsed laser annealing

    NASA Astrophysics Data System (ADS)

    Petit, E. J.; Caudano, R.

    1992-01-01

    Multilayer Al/Sb thin films have been evaporated on GaSb single crystals in ultra-high vacuum and pulsed-laser irradiated in-situ above the energy density threshold for surface melting. Superficial and interfacial chemical reactions have been characterized in-situ by Auger electron spectroscopy; and later, by X-ray photoelectron spectroscopy profiling, Rutherford backscattering spectrometry and scanning electron microscopy. The chemical reaction between the Al and Sb films is considered as a model reaction for laser-assisted synthesis of high-purity intermetallic compounds. The observation of a strong interfacial reaction between the melted film and the substrate is also a subject of great concern for optical data recording and laser alloying of ohmic contacts on semiconductors. We show that a suitable choice of the substrate and adding a low surface tension element into the metallic film can improve its stability during melting, and prevent inhomogeneous reaction and formation of holes, cracks and particles. Finally, other solutions are suggested to improve the control of these reactions.

  6. Laser induced chemical vapor phase epitaxial growth of III-V semiconductor films

    NASA Astrophysics Data System (ADS)

    Chu, Shirley S.; Chu, Ting L.

    1991-05-01

    The objective of this project is to investigate the homo- and hetero-epitaxial growth of device quality III-V semiconductor films by the free electron laser (FEL) induced growth at lower temperatures. An ArF excimer laser was used in this investigation. Metalorganic vapor phase epitaxy (MOVPE) is the commonly used technique in the growth of III-V compounds and alloys. The major concern to the use of MOVPE is the hazard involved in using highly toxic arsine and phosphine gases as the group V source materials. Efforts during this period have been focused to the homoepitaxial growth of GaAs and heteroepitaxial growth of InP on GaAs using alternate sources to eliminate the use of arsine and phosphine. Good quality epitaxial GaAs films have been prepared from elemental arsenic for the first time by either conventional substrate heating or laser enhanced processes. The epitaxial GaAs films grown from elemental arsenic are suitable for many GaAs based devices, particularly for large area devices such as solar cells. Significant cost reduction and less stringent safety requirements are major advantages.

  7. Modulation performance of semiconductor laser coupled with an ultra-short external cavity

    NASA Astrophysics Data System (ADS)

    Ahmed, Moustafa; Bakry, Ahmed

    2016-02-01

    We present modeling on the evaluation of the modulation performance of semiconductor laser coupled with an ultra-short external cavity in terms of the intensity modulation (IM) response, relative intensity noise (RIN), carrier to noise ratio (CNR), and frequency chirp. The modulation is characterized along the period-doubling (PD) route to chaos induced by optical feedback (OFB). We focus on the possibility of increasing the modulation bandwidth by improving the carrier-photon resonance (CPR) frequency or inducing resonant modulation due to photon-photon resonance (PPR). We show that along the route to chaos, OFB could increase the CPR frequency and improve the 3 dB-modulation bandwidth from 19 GHz to 28 GHz. When strong OFB keeps the continuous wave (CW) operation or induces periodic oscillation (PO), PPR becomes significant and reveals resonance modulation over mm-frequency passband exceeding 50 GHz. Both CNR and frequency chirp are also enhanced around the CPR and PPR frequencies. The highest CNR peak is obtained when modulating the CW or PO laser, whereas the maximum peak of chirp corresponds to non-modulated chaotic laser.

  8. Numerical simulation of nonlinear mode interactions in ridge-waveguide semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Kalagara, Hemashilpa; Eliseev, Petr G.; Osinski, Marek

    2012-02-01

    Nonlinear perturbation of effective group index is calculated numerically in semiconductor ridge waveguide laser structures under an influence of a strong driving wave (mode). Model of nonlinear interaction of waves is used to obtain conditions for appearance of anomalous dispersion of modal index and also for inversion of the group index of guided waves (modes of the ridge-waveguide laser structures). Ranges around critically anomalous dispersion (CAD) points, where the effective group index passes zero value, are calculated numerically. CAD points form closed loops in graphs of detuning vs. driving wave intensity. These loops define ranges where superluminal propagation, as well as slowed reflection of probe wave can be obtained. Numerical simulations are performed for an InGaAs/AlGaAs/GaAs double quantum well (DQW) laser structure and also for a GaAs/AlGaAs separate confinement heterostructure. The threshold intensities for the appearance of CAD points, as well as the influence of relaxation rate and optical confinement on the appearance of superluminal regime are compared for the DQW and SCH structures.

  9. Thermal Property Measurement of Semiconductor Melt using Modified Laser Flash Method

    NASA Technical Reports Server (NTRS)

    Lin, Bochuan; Zhu, Shen; Ban, Heng; Li, Chao; Scripa, Rosalla N.; Su, Ching-Hua; Lehoczky, Sandor L.

    2003-01-01

    This study further developed standard laser flash method to measure multiple thermal properties of semiconductor melts. The modified method can determine thermal diffusivity, thermal conductivity, and specific heat capacity of the melt simultaneously. The transient heat transfer process in the melt and its quartz container was numerically studied in detail. A fitting procedure based on numerical simulation results and the least root-mean-square error fitting to the experimental data was used to extract the values of specific heat capacity, thermal conductivity and thermal diffusivity. This modified method is a step forward from the standard laser flash method, which is usually used to measure thermal diffusivity of solids. The result for tellurium (Te) at 873 K: specific heat capacity 300.2 Joules per kilogram K, thermal conductivity 3.50 Watts per meter K, thermal diffusivity 2.04 x 10(exp -6) square meters per second, are within the range reported in literature. The uncertainty analysis showed the quantitative effect of sample geometry, transient temperature measured, and the energy of the laser pulse.

  10. Compact, High Power, Multi-Spectral Mid-Infrared Semiconductor Laser Package

    NASA Astrophysics Data System (ADS)

    Guo, Bujin; Hwang, Wen-Yen; Lin, Chich-Hsiang

    2001-10-01

    Through a vertically integrated effort involving atomic level material engineering, advanced device processing development, state-of-the-art optomechanical packaging, and thermal management, Applied Optoelectronics, Inc. (AOI), University of Houston (U H), and Physical Science, Inc. (PSI) have made progress in both Sb-based type-II semiconductor material and in P-based type-I laser device development. We have achieved record performance on inP based quantum cascade continuous wave (CW) laser (with more than 5 mW CW power at 210 K). Grating-coupled external-cavity quantum cascade lasers were studied for temperatures from 20 to 230 K. A tuning range of 88 nm has been obtained at 80 K. The technology can be made commercially available and represents a significant milestone with regard to the Dual Use Science and Technology (DUST) intention of fostering dual use commercial technology for defense need. AOI is the first commercial company to ship products of this licensed technology.

  11. Evolution of the Novalux extended cavity surface-emitting semiconductor laser (NECSEL)

    NASA Astrophysics Data System (ADS)

    McInerney, John G.

    2016-03-01

    Novalux Inc was an enterprise founded by Aram Mooradian in 1998 to commercialise a novel electrically pumped vertical extended cavity semiconductor laser platform, initially aiming to produce pump lasers for optical fiber telecommunication networks. Following successful major investment in 2000, the company developed a range of single- and multi-mode 980 nm pump lasers emitting from 100-500 mW with excellent beam quality and efficiency. This rapid development required solution of several significant problems in chip and external cavity design, substrate and DBR mirror optimization, thermal engineering and mode selection. Output coupling to single mode fiber was exceptional. Following the collapse of the long haul telecom market in late 2001, a major reorientation of effort was undertaken, initially to develop compact 60-100 mW hybrid monolithically integrated pumplets for metro/local amplified networks, then to frequency-doubled blue light emitters for biotech, reprographics and general scientific applications. During 2001-3 I worked at Novalux on a career break from University College Cork, first as R&D Director managing a small group tasked with producing new capabilities and product options based on the NECSEL platform, including high power, pulsed and frequency doubled versions, then in 2002 as Director of New Product Realization managing the full engineering team, leading the transition to frequency doubled products.

  12. Room-temperature semiconductor heterostructure refrigeration

    NASA Astrophysics Data System (ADS)

    Chao, K. A.; Larsson, Magnus; Mal'shukov, A. G.

    2005-07-01

    With the proper design of semiconductor tunneling barrier structures, we can inject low-energy electrons via resonant tunneling, and take out high-energy electrons via a thermionic process. This is the operation principle of our semiconductor heterostructure refrigerator (SHR) without the need of applying a temperature gradient across the device. Even for the bad thermoelectric material AlGaAs, our calculation shows that at room temperature, the SHR can easily lower the temperature by 5-7K. Such devices can be fabricated with the present semiconductor technology. Besides its use as a kitchen refrigerator, the SHR can efficiently cool microelectronic devices.

  13. Optical reflection from the Bragg lattice of AsSb metal nanoinclusions in an AlGaAs matrix

    SciTech Connect

    Ushanov, V. I.; Chaldyshev, V. V.; Preobrazhenskii, V. V.; Putyato, M. A.; Semyagin, B. R.

    2013-08-15

    The optical properties of metal-semiconductor metamaterials based on an AlGaAs matrix are studied. The specific feature of these materials is that there are As and AsSb nanoinclusion arrays which modify the dielectric properties of the material. These nanoinclusions are randomly arranged in the medium or form a Bragg structure with a reflectance peak at a wavelength close to 750 nm, corresponding to the transparency region of the matrix. The reflectance spectra are studied for s- and p-polarized light at different angles of incidence. It is shown that (i) As nanoinclusion arrays only slightly influence the optical properties of the medium in the wavelength range 700-900 nm, (ii) chaotic AsSb nanoinclusion arrays cause strong scattering of light, and (iii) the spatial periodicity in the arrangement of AsSb nanoinclusions is responsible for Bragg resonance in the optical reflection.

  14. Heterointerface effects on the nonlinear optical rectification in a laser-dressed graded quantum well

    NASA Astrophysics Data System (ADS)

    Niculescu, Ecaterina C.; Eseanu, Nicoleta; Radu, Adrian

    2013-05-01

    An investigation of the laser radiation effects on the nonlinear optical rectification in an AlGaAs inverse parabolic quantum well with asymmetrical barriers is performed within the effective mass approximation, taking into account the dielectric mismatch between the semiconductor and the surrounding medium. Using the accurate dressing effect for the confinement potential and electrostatic self-energy due to the image-charges, we prove that: (i) a spatially dependent effective mass in the laser-dressing parameter definition is required for precise calculations of the energy levels; (ii) the dielectric confinement provides a potential mechanism for controlling electronic states and optical properties of quantum wells. In addition, the laser dependence of the energy where the optical rectification reaches its maximum can be adjusted by external electric fields. The joint action of the intense high-frequency laser and static electric fields may provide tuning of the nonlinear properties in this type of dielectrically modulated heterostructures.

  15. Ultrasensitive detection of cell lysing in an microfabricated semiconductor laser cavity

    SciTech Connect

    Gourley, P.L.; French, T.; McDonald, A.E.; Shields, E.A.; Gourley, M.F.

    1998-01-01

    In this paper the authors report investigations of semiconductor laser microcavities for use in detecting changes of human blood cells during lysing. By studying the spectra before and during mixing of blood fluids with de-ionized water, they are able to quantify the cell shape and concentration of hemoglobin in real time during the dynamical process of lysing. The authors find that the spectra can detect subtle changes that are orders of magnitude smaller than can be observed by standard optical microscopy. Such sensitivity in observing cell structural changes has implications for measuring cell fragility, monitoring apoptotic events in real time, development of photosensitizers for photodynamic therapy, and in-vitro cell micromanipulation techniques.

  16. Experimental investigation of anti-colliding pulse mode-locked semiconductor lasers.

    PubMed

    Zhuang, Jun-Ping; Pusino, Vincenzo; Ding, Ying; Chan, Sze-Chun; Sorel, Marc

    2015-02-15

    We experimentally demonstrate anti-colliding pulse mode-locking (ACPML) in an integrated semiconductor laser. The device geometry consists of a gain section and a saturable absorber (SA) section located immediately next to one of the cavity facets. After depositing a low-reflection coating on the SA facet and a high-reflection coating on the gain section facet, the threshold is unchanged, while the modulation of the SA is increased. The data presented here confirm that the ACPML configuration improves the peak output power of the pulses, reduces the amplitude fluctuation and timing jitter, and expands the biasing parameter range over which the stable mode-locking operation occurs. PMID:25680164

  17. Noise power spectral density of a fibre scattered-light interferometer with a semiconductor laser source

    SciTech Connect

    Alekseev, A E; Potapov, V T

    2013-10-31

    Spectral characteristics of the noise intensity fluctuations at the output of a scattered-light interferometer, caused by phase fluctuations of semiconductor laser radiation are considered. This kind of noise is one of the main factors limiting sensitivity of interferometric sensors. For the first time, to our knowledge, the expression is obtained for the average noise power spectral density at the interferometer output versus the degree of a light source coherence and length of the scattering segment. Also, the approximate expressions are considered which determine the power spectral density in the low-frequency range (up to 200 kHz) and in the limiting case of extended scattering segments. The expression obtained for the noise power spectral density agrees with experimental normalised power spectra with a high accuracy. (interferometry of radiation)

  18. Synchronized 4 × 12 GHz hybrid harmonically mode-locked semiconductor laser based on AWG.

    PubMed

    Liu, S; Lu, D; Zhang, R; Zhao, L; Wang, W; Broeke, R; Ji, C

    2016-05-01

    We report a monolithically integrated synchronized four wavelength channel mode-locked semiconductor laser chip based on arrayed waveguide grating and fabricated in the InP material system. Device fabrication was completed in a multiproject wafer foundry run on the Joint European Platform for Photonic Integration of Components and Circuits. The integrated photonic chip demonstrated 5th harmonic electrical hybrid mode-locking operation with four 400 GHz spacing wavelength channels and synchronized to a 12.7 GHz RF clock, for nearly transform-limited optical pulse trains from a single output waveguide. A low timing jitter of 0.349 ps, and RF frequency locking range of ~50 MHz were also achieved. PMID:27137587

  19. Switchable semiconductor optical fiber laser incorporating AWG and broadband FBG with high SMSR

    NASA Astrophysics Data System (ADS)

    Ahmad, H.; Zulkifli, M. Z.; Thambiratnam, K.; Latiff, A. A.; Harun, S. W.

    2009-07-01

    In this paper we propose and demonstrate a switchable wavelength fiber laser (SWFL) using a semiconductor optical amplifier (SOA) together with an arrayed waveguide grating (AWG). The proposed SOA-based SWFL is capable of generating up to 14 lasing channels from 1530.1 nm to 1534.9 nm at a channel spacing of 0.8 nm (100 GHz) and a bandwidth of 11.8 and 10.2 nm respectively. The EDFA-based SWFL has a higher peak power at -5 dBm, while to SOA-based SWFL has a peak power of only -10 dBm. However, the SOA-based SWFL exhibits a much better SMSR of between 10 to 20 dB as compared to the SMSR of the EDFA-based SWFL due to the inhomogeneous broadening properties of the SOA.

  20. Monolithic integration of InGaAsP/InP semiconductor lasers using the stop-cleaving technique

    SciTech Connect

    Antreasyan, A.; Napholtz, S.G.; Wilt, D.P.; Garbinski, P.A.

    1986-07-01

    In this paper the authors describe the stop-cleaving technique for locally cleaving the mirrors of semiconductor lasers without cleaving the entire substrate, and its applications. The technique is suitable for batch processing with a good yield and, therefore, can be applied to preparing optoelectronic integrated circuits (OEIC's). InGaAsP/InP double-channel-planar-buried-heterostructure lasers emitting at 1.3 ..mu..m are fabricated utilizing this technique with threshold currents as low as 20 mA and differential quantum efficiencies as high as 60 percent (two facets). The implementation of this technique for preparing a monolithically integrated pair of lasers is also demonstrated. The integrated dual-laser configuration is utilized to obtain a monolithically integrated laser-detector pair by operating one of the lasers under reserve bias, and to enhance longitudinal mode discrimination by utilizing the optical feedback from the self-aligned stop-cleaved facet of the second cavity.

  1. Direct laser writing of topographic features in semiconductor-doped glass

    NASA Astrophysics Data System (ADS)

    Smuk, Andrei Y.

    2000-11-01

    Patterning of glass and silica surfaces is important for a number of modern technologies, which depend on these materials for manufacturing of both final products, such as optics, and prototypes for casting and molding. Among the fields that require glass processing on microscopic scale are optics (lenses and arrays, diffractive/holographic elements, waveguides), biotechnology (capillary electrophoresis chips and biochemical libraries) and magnetic media (landing zones for magnetic heads). Currently, standard non-laser techniques for glass surface patterning require complex multi-step processes, such as photolithography. Work carried out at Brown has shown that semiconductor- doped glasses (SDG) allow a single-step patterning process using low power continuous-wave visible lasers. SDG are composite materials, which consist of semiconductor crystallites embedded into glass matrix. In this study, borosilicate glasses doped with CdSxSe1-x nanocrystals were used. Exposure of these materials to a low-power above- the-energy gap laser beam leads to local softening, and subsequent expansion and rapid solidification of the exposed volume, resulting in a nearly spherical topographic feature on the surface. The effects of the incident power, beam configuration, and the exposure time on the formation and final parameters of the microlens were studied. Based on the numerical simulation of the temperature distribution produced by the absorbed Gaussian beam, and the ideas of viscous flow at the temperatures around the glass transition point, a model of lens formation is suggested. The light intensity distribution in the near-field of the growing lens is shown to have a significant effect on the final lens height. Fabrication of dense arrays of microlenses is shown, and the thermal and structural interactions between the neighboring lenses were also studied. Two-dimensional continuous-profile topographic features are achieved by exposure of the moving substrates to the writing

  2. Toward High Performance Integrated Semiconductor Micro and Nano Lasers Enabled by Transparent Conducting Materials: from Thick Structure to Thin Film

    NASA Astrophysics Data System (ADS)

    Ou, Fang

    Integrated semiconductor lasers working at the wavelength around 1.3 microm and 1.55 microm are of great interest for the research of photonic integrated circuit (PIC) since they are the crucial components for optical communications and many other applications. To satisfy the requirement of the next generation optical communication and computing systems, integrated semiconductor lasers are expected to have high device performance like very low lasing threshold, high output powers, high speed and possibility of being integrated with electronics. This dissertation focuses on the design and realization of InP based high performance electrically pumped integrated semiconductor lasers. In the dissertation, we first design the tall structure based electrically pumped integrated micro-lasers. Those lasers are capable of giving >10 mW output power with a moderate low threshold current density (0.5--5 kA/cm 2). Besides, a new enhanced radiation loss based coupler design is demonstrated to realize single directional output for curvilinear cavities. Second, the thin film structure based integrated semiconductor laser designs are proposed. Both structures use the side conduction geometry to enable the electrical injection into the thin film laser cavity. The performance enhancement of the thin film structure based lasers is analyzed compared to the tall structure. Third, we investigate the TCO materials. CdO deposited by PLD and In 2O3 deposited by IAD are studied from aspects of their physical, optical and electrical properties. Those materials can give a wide range of tunability in their conductivity (1--5000 S/cm) and optical transparency (loss 200--5000 cm-1), which is of great interest in realizing novel nanophotonic devices. In addition, the electrical contact properties of those materials to InP are also studied. Experiment result shows that both CdO and In2O3 can achieve good ohmic contact to n-InP with contact resistance as low as 10-6O·cm 2. At last, we investigate

  3. Analysis of threshold conditions for generation of a closed mode in a Fabry-Perot semiconductor laser

    SciTech Connect

    Slipchenko, S. O. Podoskin, A. A.; Pikhtin, N. A.; Sokolova, Z. N.; Leshko, A. Y.; Tarasov, I. S.

    2011-05-15

    Threshold conditions for generation of a closed mode in the crystal of the Fabry-Perot semiconductor laser with a quantum-well active region are analyzed. It is found that main parameters affecting the closed mode lasing threshold for the chosen laser heterostructure are as follows: the optical loss in the passive region, the optical confinement factor of the closed mode in the gain region, and material gain detuning. The relations defining the threshold conditions for closed mode lasing in terms of optical and geometrical characteristics of the semiconductor laser are derived. It is shown that the threshold conditions can be satisfied at a lower material gain in comparison with the Fabry-Perot cavity mode due to zero output loss for the closed mode.

  4. Improvement of the quasi-continuous-wave lasing properties in organic semiconductor lasers using oxygen as triplet quencher

    NASA Astrophysics Data System (ADS)

    Sandanayaka, Atula S. D.; Zhao, Li; Pitrat, Delphine; Mulatier, Jean-Christophe; Matsushima, Toshinori; Andraud, Chantal; Kim, Ju-Hyung; Ribierre, Jean-Charles; Adachi, Chihaya

    2016-05-01

    We demonstrate quasi-continuous-wave lasing in solvent-free liquid organic semiconductor distributed feedback lasers based on a blend containing a liquid 9-(2-ethylhexyl)carbazole host doped with a blue-emitting heptafluorene derivative. The liquid gain medium is bubbled with either oxygen or nitrogen in order to investigate the role of a triplet quencher such as molecular oxygen on the quasi-continuous-wave lasing properties of organic semiconductor lasers. The oxygenated laser device exhibits a low threshold of 2 μJ cm-2, which is lower than that measured in the nitrogenated device and is independent of the repetition rate in a range between 0.01 and 4 MHz.

  5. Characterization of wavelength-swept active mode locking fiber laser based on reflective semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Lee, Hwi Don; Lee, Ju Han; Yung Jeong, Myung; Kim, Chang-Seok

    2011-07-01

    The static and dynamic characteristics of a wavelength-swept active mode locking (AML) fiber laser are presented in both the time-region and wavelength-region. This paper shows experimentally that the linewidth of a laser spectrum and the bandwidth of the sweeping wavelength are dependent directly on the length and dispersion of the fiber cavity as well as the modulation frequency and sweeping rate under the mode-locking condition. To achieve a narrower linewidth, a longer length and higher dispersion of the fiber cavity as well as a higher order mode locking condition are required simultaneously. For a broader bandwidth, a lower order of the mode locking condition is required using a lower modulation frequency. The dynamic sweeping performance is also analyzed experimentally to determine its applicability to optical coherence tomography imaging. It is shown that the maximum sweeping rate can be improved by the increased free spectral range from the shorter length of the fiber cavity. A reflective semiconductor optical amplifier (RSOA) was used to enhance the modulation and dispersion efficiency. Overall a triangular electrical signal can be used instead of the sinusoidal signal to sweep the lasing wavelength at a high sweeping rate due to the lack of mechanical restrictions in the wavelength sweeping mechanism.

  6. Multiwavelength diode-laser absorption spectroscopy using external intensity modulation by semiconductor optical amplifiers.

    PubMed

    Karagiannopoulos, Solon; Cheadle, Edward; Wright, Paul; Tsekenis, Stylianos; McCann, Hugh

    2012-12-01

    A novel opto-electronic scheme for line-of-sight Near-IR gas absorption measurement based on direct absorption spectroscopy (DAS) is reported. A diode-laser-based, multiwavelength system is designed for future application in nonintrusive, high temporal resolution tomographic imaging of H2O in internal combustion engines. DAS is implemented with semiconductor optical amplifiers (SOAs) to enable wavelength multiplexing and to induce external intensity modulation for phase-sensitive detection. Two overtone water transitions in the Near-IR have been selected for ratiometric temperature compensation to enable concentration measurements, and an additional wavelength is used to account for nonabsorbing attenuation. A wavelength scanning approach was used to evaluate the new modulation technique, and showed excellent absorption line recovery. Fixed-wavelength, time-division-multiplexing operation with SOAs has also been demonstrated. To the best of our knowledge this is the first time SOAs have been used for modulation and switching in a spectroscopic application. With appropriate diode laser selection this scheme can be also used for other chemical species absorption measurements. PMID:23207374

  7. Rapid composition analysis of compound semiconductor thin film solar cell by laser induced breakdown spectroscopy

    NASA Astrophysics Data System (ADS)

    Lee, S. H.; Kim, C. K.; In, J. H.; Jeong, S. H.

    2014-03-01

    The characteristics of laser-induced breakdown spectroscopy (LIBS) such as short measurement time and no sample preparation provide clear advantages over other analytical techniques for rapid elemental analysis at manufacturing sites where the composition of products need to be determined in real-time for process monitoring or quality control. Thin film solar cells based on CuIn1-xGaxSe2 (CIGS), polycrystalline compound semiconductor material, have unique advantages of high efficiency (>20%), long-term stability, and low manufacturing cost over other types of solar cell. The electrical and optical properties of the thin CIGS films are closely related to the concentration ratios among its major constituent elements Cu, In, Ga and Se such as Ga/(Ga + In) and Cu/(Ga + In), and thus an accurate measurement of the composition of CIGS thin films has been an issue among CIGS solar cell researchers, requiring a fast and reliable technique for composition analysis. This paper presents the results of nanosecond (ns) and femtosecond (fs) laser based LIBS analysis of thin CIGS films. The critical issues for LIBS analysis of CIGS thin films such are discussed in comparison with ns- and fs-LIBS measurement results. The calibration of LIBS signal intensity ratios with respect to reference concentration data is carried out and the results of optimal line selection for LIBS analysis, depth profiling capability, and reproducibility are discussed.

  8. Heavy-Tailed Fluctuations in the Spiking Output Intensity of Semiconductor Lasers with Optical Feedback

    PubMed Central

    2016-01-01

    Although heavy-tailed fluctuations are ubiquitous in complex systems, a good understanding of the mechanisms that generate them is still lacking. Optical complex systems are ideal candidates for investigating heavy-tailed fluctuations, as they allow recording large datasets under controllable experimental conditions. A dynamical regime that has attracted a lot of attention over the years is the so-called low-frequency fluctuations (LFFs) of semiconductor lasers with optical feedback. In this regime, the laser output intensity is characterized by abrupt and apparently random dropouts. The statistical analysis of the inter-dropout-intervals (IDIs) has provided many useful insights into the underlying dynamics. However, the presence of large temporal fluctuations in the IDI sequence has not yet been investigated. Here, by applying fluctuation analysis we show that the experimental distribution of IDI fluctuations is heavy-tailed, and specifically, is well-modeled by a non-Gaussian stable distribution. We find a good qualitative agreement with simulations of the Lang-Kobayashi model. Moreover, we uncover a transition from a less-heavy-tailed state at low pump current to a more-heavy-tailed state at higher pump current. Our results indicate that fluctuation analysis can be a useful tool for investigating the output signals of complex optical systems; it can be used for detecting underlying regime shifts, for model validation and parameter estimation. PMID:26901346

  9. Analysis of message extraction in optical chaos communications based on injection-locking synchronization of semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Murakami, Atsushi; Shore, K. Alan

    2006-10-01

    In this paper, we employ a simple theory based on driven damped oscillators to clarify the physical basis for message extraction in optical chaos communications using injection-locked semiconductor lasers. The receiver laser is optically driven by injection from the transmitter laser. We have numerically investigated the response characteristics of the receiver when it is driven by periodic (message) and chaotic (carrier) signals. It is thereby revealed that the response of the receiver laser in the two cases is quite different. For the periodic drive, the receiver exhibits a response depending on the signal frequency, while the chaotic drive provides a frequency-independent synchronous response to the receiver laser. CPF can be clearly understood in the difference between the periodic and chaotic drives. Message extraction using CPF is also examined, and the validity of our theoretical explanation for the physical mechanism underlying CPF is thus verified.

  10. Efficient removal of phenol from water using Fe(2)O(3) semiconductor catalyst under UV laser irradiation.

    PubMed

    Gondal, Mohammed A; Sayeed, Mohammad N; Yamani, Zain H; Al-Arfaj, Abdul Rahman

    2009-04-01

    Efficient removal of phenol was carried out using laser induced photocatalyis process in the presence of Fe(2)O(3) semiconductor catalysts, and under UV laser irradiation. Parametric dependence of the removal process was investigated carefully by variation of laser irradiation time, laser energy, and concentration of the catalysts. pH measurements were also carried out to understand the photocatalytic process for removal of phenol. Maximum phenol removal achieved in this process was more than 90% during 1 hour of laser irradiation. This is considered highly efficient as compared to conventional setups using lamps. Reaction kinetics for the removal of phenol was also studied, and a reaction rate of 0.017 min(- 1) was estimated, following first order kinetics. PMID:19241266

  11. Photorefractive Semiconductors and Applications

    NASA Technical Reports Server (NTRS)

    Chen, Li-Jen; Luke, Keung L.

    1993-01-01

    Photorefractive semiconductors are attractive for information processing, becuase of fast material response, compatibility with semiconductor lasers, and availability of cross polarization diffraction for enhancing signal-to-noise ration. This paper presents recent experimental results on information processing using photorefractive GaAs, InP and CdTe, including image processing with semiconductor lasers.

  12. Numerical simulation of passively mode-locked fiber laser based on semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Yang, Jingwen; Jia, Dongfang; Zhang, Zhongyuan; Chen, Jiong; Liu, Tonghui; Wang, Zhaoying; Yang, Tianxin

    2013-03-01

    Passively mode-locked fiber laser (MLFL) has been widely used in many applications, such as optical communication system, industrial production, information processing, laser weapons and medical equipment. And many efforts have been done for obtaining lasers with small size, simple structure and shorter pulses. In recent years, nonlinear polarization rotation (NPR) in semiconductor optical amplifier (SOA) has been studied and applied as a mode-locking mechanism. This kind of passively MLFL has faster operating speed and makes it easier to realize all-optical integration. In this paper, we had a thorough analysis of NPR effect in SOA. And we explained the principle of mode-locking by SOA and set up a numerical model for this mode-locking process. Besides we conducted a Matlab simulation of the mode-locking mechanism. We also analyzed results under different working conditions and several features of this mode-locking process are presented. Our simulation shows that: Firstly, initial pulse with the peak power exceeding certain threshold may be amplified and compressed, and stable mode-locking may be established. After about 25 round-trips, stable mode-locked pulse can be obtained which has peak power of 850mW and pulse-width of 780fs.Secondly, when the initial pulse-width is greater, narrowing process of pulse is sharper and it needs more round-trips to be stable. Lastly, the bias currents of SOA affect obviously the shape of mode-locked pulse and the mode-locked pulse with high peak power and narrow width can be obtained through adjusting reasonably the bias currents of SOA.

  13. Characterization of Hydrogen Complex Formation in III-V Semiconductors

    SciTech Connect

    Williams, Michael D

    2006-09-28

    Atomic hydrogen has been found to react with some impurity species in semiconductors. Hydrogenation is a methodology for the introduction of atomic hydrogen into the semiconductor for the express purpose of forming complexes within the material. Efforts to develop hydrogenation as an isolation technique for AlGaAs and Si based devices failed to demonstrate its commercial viability. This was due in large measure to the low activation energies of the formed complexes. Recent studies of dopant passivation in long wavelength (0.98 - 1.55m) materials suggested that for the appropriate choice of dopants much higher activation energies can be obtained. This effort studied the formation of these complexes in InP, This material is extensively used in optoelectronics, i.e., lasers, modulators and detectors. The experimental techniques were general to the extent that the results can be applied to other areas such as sensor technology, photovoltaics and to other material systems. The activation energies for the complexes have been determined and are reported in the scientific literature. The hydrogenation process has been shown by us to have a profound effect on the electronic structure of the materials and was thoroughly investigated. The information obtained will be useful in assessing the long term reliability of device structures fabricated using this phenomenon and in determining new device functionalities.

  14. 85.7 MHz repetition rate mode-locked semiconductor disk laser: fundamental and soliton bound states.

    PubMed

    Butkus, M; Viktorov, E A; Erneux, T; Hamilton, C J; Maker, G; Malcolm, G P A; Rafailov, E U

    2013-10-21

    Mode-locked optically pumped semiconductor disk lasers (SDLs) are in strong demand for applications in bio-medical photonics, chemistry, space communications and non-linear optics. However, the wider spread of SDLs was constrained as they are operated in high repetition rates above 200 MHz due to short carrier lifetimes in the semiconductors. Here we demonstrate experimentally and theoretically that it is possible to overcome the limitation of fast carrier relaxation and show significant reduction of repetition rate down to 85.7 MHz by exploiting phase-amplitude coupling effect. In addition, a low repetition rate SDL serves as a test-bed for bound soliton state previously unknown for semiconductor devices. The breakthrough to sub-100 MHz repetition rate will open a whole new window of development opportunities. PMID:24150392

  15. Silicon photonics WDM transmitter with single section semiconductor mode-locked laser

    NASA Astrophysics Data System (ADS)

    Müller, Juliana; Hauck, Johannes; Shen, Bin; Romero-García, Sebastian; Islamova, Elmira; Azadeh, Saeed Sharif; Joshi, Siddharth; Chimot, Nicolas; Moscoso-Mártir, Alvaro; Merget, Florian; Lelarge, François; Witzens, Jeremy

    2015-04-01

    We demonstrate a wavelength domain-multiplexed (WDM) optical link relying on a single section semiconductor mode-locked laser (SS-MLL) with quantum dash (Q-Dash) gain material to generate 25 optical carriers spaced by 60.8 GHz, as well as silicon photonics (SiP) resonant ring modulators (RRMs) to modulate individual optical channels. The link requires optical reamplification provided by an erbium-doped fiber amplifier (EDFA) in the system experiments reported here. Open eye diagrams with signal quality factors (Q-factors) above 7 are measured with a commercial receiver (Rx). For higher compactness and cost effectiveness, reamplification of the modulated channels with a semiconductor optical amplifier (SOA) operated in the linear regime is highly desirable. System and device characterization indicate compatibility with the latter. While we expect channel counts to be primarily limited by the saturation output power level of the SOA, we estimate a single SOA to support more than eight channels. Prior to describing the system experiments, component design and detailed characterization results are reported including design and characterization of RRMs, ring-based resonant optical add-drop multiplexers (RR-OADMs) and thermal tuners, S-parameters resulting from the interoperation of RRMs and RR-OADMs, and characterization of Q-Dash SS-MLLs reamplified with a commercial SOA. Particular emphasis is placed on peaking effects in the transfer functions of RRMs and RR-OADMs resulting from transient effects in the optical domain, as well as on the characterization of SS-MLLs in regard to relative intensity noise (RIN), stability of the modes of operation, and excess noise after reamplification.

  16. [Study on packaging-induced stress in 4 mm cavity length high-power single emitter semiconductor laser].

    PubMed

    Zhang, Yong; Yang, Rui-xia; An, Zhen-feng; Xu, Hui-wu

    2014-06-01

    To reduce packaging-induced stress of long cavity length high-power single emitter semiconductor laser, the relationship between the stress and the wavelength shift was deduced on the basis of the theory that the stress can change the band gap. A method was developed for quantitatively calculating the stress by measuring the emission spectrum of the laser under pulse conditions. The results show that the soldering quality is a critical factor affecting thermal stress. The difference in stress can exceed 300 MPa due to the difference in soldering quality. By optimizing the reflowing soldering curve of the laser, the stress of the laser drops from 129.7 to 53.4 MPa. This method can also effectively solve the problem that the stress varies with storage time. This work demonstrates that the measurement and analysis of the emission spectrum of the laser can provide a useful method to study packaging stress of the high-power single emitter semiconductor laser. It is also an available means to evaluate and analyze soldering quality. PMID:25358141

  17. Demonstration of arbitrary channel selection utilizing a pulse-injected semiconductor laser with a phase-locked loop.

    PubMed

    Juan, Yu-Shan; Lin, Fan-Yi

    2011-01-17

    An arbitrary channel selection system based on a pulse-injected semiconductor laser with a phase-locked loop (PLL) is experimentally demonstrated and characterized. Through optical injection from a tunable laser, channels formed by the frequency components of a microwave frequency comb generated in the pulse-injected semiconductor laser are individually selected and enhanced. Selections of a primary channel at the fundamental frequency of 1.2 GHz and a secondary channel in a range from 10.8 to 18 GHz are shown, where the selection is done by adjusting the injection strength from the tunable laser. Suppression ratios of 44.5 and 25.9 dB between the selected primary and secondary channels to the averaged magnitude of the unwanted channels are obtained, respectively. To show the spectral quality of the pulse-injected laser, a single sideband (SSB) phase noise of -60 dBc/kHz at an offset frequency of 25 kHz is measured. Moreover, the conversion gain between the primary and secondary channels and the crosstalk between the selected channels to the adjacent unwanted channels are also investigated. Without the need of expensive external modulators, arbitrary channel selection is realized in the proposed system where the channel spacing and selection can be continuously adjusted through tuning the controllable laser parameters. PMID:21263644

  18. Reliability of high power laser diodes with external optical feedback

    NASA Astrophysics Data System (ADS)

    Bonsendorf, Dennis; Schneider, Stephan; Meinschien, Jens; Tomm, Jens W.

    2016-03-01

    Direct diode laser systems gain importance in the fields of material processing and solid-state laser pumping. With increased output power, also the influence of strong optical feedback has to be considered. Uncontrolled optical feedback is known for its spectral and power fluctuation effects, as well as potential emitter damage. We found that even intended feedback by use of volume Bragg gratings (VBG) for spectral stabilization may result in emitter lifetime reduction. To provide stable and reliable laser systems design, guidelines and maximum feedback ratings have to be found. We present a model to estimate the optical feedback power coupled back into the laser diode waveguide. It includes several origins of optical feedback and wide range of optical elements. The failure thresholds of InGaAs and AlGaAs bars have been determined not only at standard operation mode but at various working points. The influence of several feedback levels to laser diode lifetime is investigated up to 4000h. The analysis of the semiconductor itself leads to a better understanding of the degradation process by defect spread. Facet microscopy, LBIC- and electroluminescence measurements deliver detailed information about semiconductor defects before and after aging tests. Laser diode protection systems can monitor optical feedback. With this improved understanding, the emergency shutdown threshold can be set low enough to ensure laser diode reliability but also high enough to provide better machine usability avoiding false alarms.

  19. Carbon incorporation in AlGaAs grown by CBE

    NASA Astrophysics Data System (ADS)

    Lee, B. J.; Houng, Y. M.; Miller, J. N.; Turner, J. E.

    1990-10-01

    The incorporation of carbon into unintentionally doped Al xGa 1- xAs epilayers grown by chemical beam epitaxy (CBE) using arsine and various combinations of group III sources was investigated. Growth of unintentionally doped Al xGa 1- xAs using triethylgallium (TEGa)+triisobutylaluminum (TIBAl) resulted in lower hole and carbon concentrations than those grown from TEGa+triethylaluminum (TEAl). The carbon concentration in AlGaAs epilayers increased with decreasing growth temperature below 560°C and increased with increasing growth temperature above 560°C. This "U-shaped" dependence of carbon concentration on growth temperature exhibited its minimum value at ˜ 560°C for both the TEGa+TEAl and TEGa+TIBAl systems. The alkyl-Al compounds are thought to be the controlling species for the carbon incorporation in the low temperature regime, while the AlCH 3 formed through β-methyl elimination is responsible for the carbon incorporation in the high temperature regime. Based on this study, we are able to grow high quality AlGaAs epilayers with reduced carbon contamination by using TIBAl instead of TEAl at the growth temperature of 560°C with a V/III ratio of 20. AlGaAs/GaAs modulation-doped structures grown from TEGa+TIBAl show a two-dimensional electron gas mobility as high as 88,600 cm 2/V·s at 77 K, which is a 40% improvement over that grown from TEGa+TEAl, with a sheet carrier concentration of 6x10 11 cm -2 and a spacer layer thickness of 150 Å.

  20. Weak-beam trapping by bright spatial solitons in AlGaAs planar waveguides

    NASA Astrophysics Data System (ADS)

    Kang, J. U.; Stegeman, G. I.; Aitchison, J. S.

    1995-10-01

    We demonstrate experimentally the trapping and spatial wave breaking of weak signal beams by orthogonally polarized bright spatial solitons. Experiments were performed in an AlGaAs planar waveguide excited at a wavelength of 1.55 mu m .