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Sample records for algan barrier layer

  1. Influence of thermal stress on the relative permittivity of the AlGaN barrier layer in an AlGaN/GaN heterostructure Schottky contacts

    NASA Astrophysics Data System (ADS)

    Lü, Yuan-Jie; Lin, Zhao-Jun; Zhang, Yu; Meng, Ling-Guo; Cao, Zhi-Fang; Luan, Chong-Biao; Chen, Hong; Wang, Zhan-Guo

    2011-09-01

    Ni Schottky contacts on AlGaN/GaN heterostructures were fabricated. Some samples were thermally treated in a furnace with N2 ambience at 600 °C for different times (0.5 h, 4.5 h, 10.5 h, 18 h, 33 h, 48 h, and 72 h), the others were thermally treated for 0.5 h at different temperatures (500 °C, 600 °C, 700 °C, and 800 °C). With the measured current—voltage (I—V) and capacitance—voltage (C—V) curves and by self-consistently solving Schrodinger's and Poisson's equations, we found that the relative permittivity of the AlGaN barrier layer was related to the piezoelectric and the spontaneous polarization of the AlGaN barrier layer. The relative permittivity was in proportion to the strain of the AlGaN barrier layer. The relative permittivity and the strain reduced with the increased thermal stress time until the AlGaN barrier totally relaxed (after 18 h at 600 °C in the current study), and then the relative permittivity was almost a constant with the increased thermal stress time. When the sample was treated at 800 °C for 0.5 h, the relative permittivity was less than the constant due to the huge diffusion of the contact metal atoms. Considering the relation between the relative permittivity of the AlGaN barrier layer and the converse piezoelectric effect, the conclusion can be made that a moderate thermal stress can restrain the converse piezoelectric effect and can improve the stability of AlGaN/GaN heterostructure devices.

  2. Improved characteristics of ultraviolet AlGaN multiple-quantum-well laser diodes with step-graded quantum barriers close to waveguide layers

    NASA Astrophysics Data System (ADS)

    Cai, Xuefen; Li, Shuping; Kang, Junyong

    2016-09-01

    Ultraviolet AlGaN multiple-quantum-well laser diodes (LDs) with step-graded quantum barriers (QBs) instead of conventional first and last QBs close to waveguide layers are proposed. The characteristics of this type of laser diodes are numerically investigated by using the software PICS3D and it is found that the performances of these LDs are greatly improved. The results indicates that the structure with step-graded QBs exhibits higher output light power, slope efficiency and emission intensity, as well as lower series resistance and threshold current density under the identical condition, compared with conventional LD structure.

  3. High f T and f max AlGaN/GaN HFETs achieved by using thin and high-Al-composition AlGaN barrier layers and Cat-CVD SiN passivation

    NASA Astrophysics Data System (ADS)

    Higashiwaki, M.; Onojima, N.; Matsui, T.; Mimura, T.

    2006-05-01

    We fabricated sub-0.1 m-gate Al0.4Ga0.6N/GaN heterostructure field-effect transistors (HFETs) with AlGaN barrier thicknesses of 4-10 nm. The devices were passivated with 2 nm-thick SiN layers formed by catalytic chemical vapor deposition (Cat-CVD). The Cat-CVD SiN passivation greatly increased electron density, and the effect became more significant with decreasing AlGaN barrier thickness. The HFETs had maximum drain current densities of 1.1-1.5 A/mm and peak extrinsic transconductances of 305-438 mS/mm. Peak current-gain cutoff frequency of 163 GHz and maximum oscillation frequency of 192 GHz were obtained for the devices with 8 nm-thick AlGaN barriers.

  4. Persistent photoconductivity in AlGaN/GaN heterojunction channels caused by the ionization of deep levels in the AlGaN barrier layer

    SciTech Connect

    Murayama, H.; Akiyama, Y.; Niwa, R.; Sakashita, H.; Sakaki, H.; Kachi, T.; Sugimoto, M.

    2013-12-04

    Time-dependent responses of drain current (I{sub d}) in an AlGaN/GaN HEMT under UV (3.3 eV) and red (2.0 eV) light illumination have been studied at 300 K and 250 K. UV illumination enhances I{sub d} by about 10 %, indicating that the density of two-dimensional electrons is raised by about 10{sup 12} cm{sup −2}. When UV light is turned off at 300 K, a part of increased I{sub d} decays quickly but the other part of increment is persistent, showing a slow decay. At 250 K, the majority of increment remains persistent. It is found that such a persistent increase of I{sub d} at 250 K can be partially erased by the illumination of red light. These photo-responses are explained by a simple band-bending model in which deep levels in the AlGaN barrier get positively charged by the UV light, resulting in a parabolic band bending in the AlGaN layer, while some potion of those deep levels are neutralized by the red light.

  5. Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier

    NASA Astrophysics Data System (ADS)

    Jia, Chuanyu; Yu, Tongjun; Feng, Xiaohui; Wang, Kun; Zhang, Guoyi

    2016-09-01

    The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL.

  6. Performance enhancement of AlGaN deep-ultraviolet light-emitting diodes with varied superlattice barrier electron blocking layer

    NASA Astrophysics Data System (ADS)

    Liu, Songqing; Ye, Chunya; Cai, Xuefen; Li, Shuping; Lin, Wei; Kang, Junyong

    2016-05-01

    The AlGaN-based deep-UV LEDs with specific design of varied superlattice barrier electron blocking layer (EBL) has been investigated numerically by APSYS software. The proposed structure exhibits significant improvement in the light output power, internal quantum efficiency, current-voltage curve and electroluminescence intensity. After analyzing the profiles of energy band diagrams, carriers concentration and radiative recombination rate, we find the main advantages of proposed structure are ascribed to higher barrier suppressing electron leakage and reduced barrier for hole injection. Thus, compared with reference sample, the proposed EBL design may be a good method for improving the whole performance of UV LEDs.

  7. From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: Role of the AlGaN layer microstructure

    SciTech Connect

    Fisichella, G.; Greco, G.; Roccaforte, F.; Giannazzo, F.

    2014-08-11

    The electrical behaviour of graphene (Gr) contacts to Al{sub x}Ga{sub 1−x}N/GaN heterostructures has been investigated, focusing, in particular, on the impact of the AlGaN microstructure on the current transport at Gr/AlGaN interface. Two Al{sub 0.25}Ga{sub 0.75}N/GaN heterostructures with very different quality in terms of surface roughness and defectivity, as evaluated by atomic force microscopy (AFM) and transmission electron microscopy, were compared in this study, i.e., a uniform and defect-free sample and a sample with a high density of typical V-defects, which locally cause a reduction of the AlGaN thickness. Nanoscale resolution current voltage (I-V) measurements by an Au coated conductive AFM tip were carried out at several positions both on the bare and Gr-coated AlGaN surfaces. Rectifying contacts were found onto both bare AlGaN surfaces, but with a more inhomogeneous and lower Schottky barrier height (Φ{sub B} ≈ 0.6 eV) for AlGaN with V-defects, with respect to the case of the uniform AlGaN (Φ{sub B} ≈ 0.9 eV). Instead, very different electrical behaviours were observed in the presence of the Gr interlayer between the Au tip and AlGaN, i.e., a Schottky contact with reduced barrier height (Φ{sub B} ≈ 0.4 eV) for the uniform AlGaN and an Ohmic contact for the AlGaN with V-defects. Interestingly, excellent lateral uniformity of the local I-V characteristics was found in both cases and can be ascribed to an averaging effect of the Gr electrode over the AlGaN interfacial inhomogeneities. Due to the locally reduced AlGaN layer thickness, V defect act as preferential current paths from Gr to the 2DEG and can account for the peculiar Ohmic behaviour of Gr contacts on defective AlGaN.

  8. Vertical transport through AlGaN barriers in heterostructures grown by ammonia molecular beam epitaxy and metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Browne, David A.; Fireman, Micha N.; Mazumder, Baishakhi; Kuritzky, Leah Y.; Wu, Yuh-Renn; Speck, James S.

    2017-02-01

    The results of vertical transport through AlGaN heterobarriers are presented for ammonia molecular beam epitaxy (NH3-MBE) on c-plane GaN on sapphire templates and on m-plane bulk GaN substrates, as well as by metalorganic chemical vapor deposition (MOCVD) on m-plane bulk GaN substrates. Experiments were performed to determine the role of the AlGaN alloy as an effective barrier to vertical transport, which is an essential component of both optoelectronic and power electronic devices. The alloy composition, thickness, and doping levels of the AlGaN layers, as well as substrate orientation, were systematically varied to examine their influence on electron transport. Atom probe tomography (APT) was used to directly determine the alloy composition at the atomic scale to reveal the presence of random alloy fluctuations which provides insight into the nature of the observed transport.

  9. Enhanced photoluminescence efficiency in AlGaN quantum wells with gradient-composition AlGaN barriers

    NASA Astrophysics Data System (ADS)

    Shevchenko, E. A.; Nechaev, D. V.; Jmerik, V. N.; Kaibyshev, V. Kh; Ivanov, S. V.; Toropov, A. A.

    2016-08-01

    We present photoluminescence studies of AIxGa1-xN/AlyGa1-yN (y = x+0.3) quantum well (QW) heterostructures with graded AI content in barrier layers, emitting in the range 285-315 nm. The best-established internal quantum efficiency of the QW emission is as high as 81% at 300 K, owing to enhanced activation energy of charge carriers and exciton binding energy in the QW heterostructure with optimized design.

  10. Strain and defects in Si-doped (Al)GaN epitaxial layers

    NASA Astrophysics Data System (ADS)

    Forghani, Kamran; Schade, Lukas; Schwarz, Ulrich T.; Lipski, Frank; Klein, Oliver; Kaiser, Ute; Scholz, Ferdinand

    2012-11-01

    Si is the most common dopant in (Al)GaN based devices acting as a donor. It has been observed that Si induces tensile strain in (Al)GaN films, which leads to an increasing tendency for cracking of such films with the increase of Si content and/or the increase of Al content. Based on x-ray investigations, the Si-doped films have a larger in-plane lattice constant than their undoped buffer layers, indicating involvement of a mechanism other than the change of lattice constants expected from an alloying effect. In this work, we present a model about Si dislocation interaction while debating other proposed models in the literature. According to our model, Si atoms are attracted to the strain dipole of edge-type dislocations in (Al)GaN films. It is expected that Si is more incorporated on that side of the dislocation, which is under compression leading to the formation of off-balanced dipoles with reduced compressive component. In response to such off-balanced dipoles—appearing as tensile dominant strain dipoles—the dislocation lines climb in order to accommodate the excess tensile strain. However, this dislocation climb mechanism is hindered by forces exerted by vacancies created due to the climb process. Accordingly, we have observed a lower strain level in our Si doped layers when they contain fewer dislocations. These findings were further supported by x-ray diffraction, transmission electron microscopy, and micro-photoluminescence investigations.

  11. Improved color rendering of phosphor-converted white light-emitting diodes with dual-blue active layers and n-type AlGaN layer.

    PubMed

    Yan, Qi-Rong; Zhang, Yong; Li, Shu-Ti; Yan, Qi-Ang; Shi, Pei-Pei; Niu, Qiao-Li; He, Miao; Li, Guo-Ping; Li, Jun-Rui

    2012-05-01

    An InGaN/GaN blue light-emitting diode (LED) structure and an InGaN/GaN blue-violet LED structure were grown sequentially on the same sapphire substrate by metal-organic chemical vapor deposition. It was found that the insertion of an n-type AlGaN layer below the dual blue-emitting active layers showed better spectral stability at the different driving current relative to the traditional p-type AlGaN electron-blocking layer. In addition, color rendering index of a Y3Al5O12:Ce3+ phosphor-converted white LED based on a dual blue-emitting chip with n-type AlGaN reached 91 at 20 mA, and Commission Internationale de L'Eclairage coordinates almost remained at the same point from 5 to 60 mA.

  12. Strain-compensated AlGaN /GaN/InGaN cladding layers in homoepitaxial nitride devices

    NASA Astrophysics Data System (ADS)

    Czernecki, R.; Krukowski, S.; Targowski, G.; Prystawko, P.; Sarzynski, M.; Krysko, M.; Kamler, G.; Grzegory, I.; Leszczynski, M.; Porowski, S.

    2007-12-01

    One of the most important problems in III-nitride violet laser diode technology is the lattice mismatch between the AlGaN cladding layers and the rest of the epitaxial structure. For efficiently working devices, it is necessary to have both a high Al content and thick claddings. This leads, however, to severe sample bowing and even cracking of the upper layer. In this work, we propose a cladding structure of strain-compensated AlGaN /GaN/InGaN superlattice grown by metal-organic vapor phase epitaxy on bulk GaN substrates. Various thicknesses and compositions of the layers were employed. We measured the radius of bowing, lattice mismatches, aluminum and indium contents, and densities of threading dislocations. The proposed cladding structures suppress bowing and cracking, which are the two parasitic effects commonly experienced in laser diodes with bulk AlGaN claddings. The suppression of cracking and bowing is shown to occur due to modified strain energy distribution of the superlattices structure.

  13. Enhancement of blue InGaN light-emitting diodes by using AlGaN increased composition-graded barriers

    NASA Astrophysics Data System (ADS)

    Yan, Lei; Zhiqiang, Liu; Miao, He; Xiaoyan, Yi; Junxi, Wang; Jinmin, Li; Shuwen, Zheng; Shuti, Li

    2015-05-01

    The characteristics of nitride-based blue light-emitting diodes (LEDs) with AlGaN composition-graded barriers are analyzed numerically. The carrier concentrations in the quantum wells (QWs), the energy band diagrams, the electrostatic fields, and the light output power are investigated by APSYS software. The simulation results show that the LED with AlGaN composition-graded barriers has a better performance than its AlGaN/InGaN counterpart owing to the increase of hole injection and the enhancement of electron confinement. The simulation results also suggest that the output power is enhanced significantly and the efficiency droop is markedly improved when the AlGaN barriers are replaced by AlGaN composition-graded barriers. Project supported by the National High Technology Program of China (Nos. 2011AA03A105, 2013AA03A101), the National Natural Science Foundation of China (Nos. 61306051, 61306050, 11474105), the Beijing Municipal Science and Technology Project (No. D12110300140000), the National Basic Research Program of China (No. 2011CB301902), the Industry-Academia-Research Union Special Fund of Guangdong Province of China (No. 2012B091000169), the Science & Technology Innovation Platform of Industry-Academia-Research Union of Guangdong Province-Ministry Cooperation Special Fund of China (No. 2012B090600038), the Specialized Research Fund for the Doctoral Program of Higher Education (No. 20134407110008), and the Science research innovation foundation of South China Normal University of China (No. 2013kyjj041).

  14. Composition dependent valence band order in c-oriented wurtzite AlGaN layers

    SciTech Connect

    Neuschl, B. Helbing, J.; Knab, M.; Lauer, H.; Madel, M.; Thonke, K.; Feneberg, M.

    2014-09-21

    The valence band order of polar wurtzite aluminum gallium nitride (AlGaN) layers is analyzed for a dense series of samples, grown heteroepitaxially on sapphire substrates, covering the complete composition range. The excitonic transition energies, found by temperature dependent photoluminescence (PL) spectroscopy, were corrected to the unstrained state using input from X-ray diffraction. k∙p theory yields a critical relative aluminum concentration x{sub c}=(0.09±0.05) for the crossing of the uppermost two valence bands for strain free material, shifting to higher values for compressively strained samples, as supported by polarization dependent PL. The analysis of the strain dependent valence band crossing reconciles the findings of other research groups, where sample strain was neglected. We found a bowing for the energy band gap to the valence band with Γ₉ symmetry of b{sub Γ₉}=0.85eV, and propose a possible bowing for the crystal field energy of b{sub cf}=-0.12eV. A comparison of the light extraction efficiency perpendicular and parallel to the c axis of Al{sub x}Ga{sub 1-x}N/Al{sub y}Ga{sub 1-y}N quantum well structures is discussed for different compositions.

  15. Reduction in leakage current in AlGaN/GaN HEMT with three Al-containing step-graded AlGaN buffer layers on silicon

    NASA Astrophysics Data System (ADS)

    Yu, Xinxin; Ni, Jinyu; Li, Zhonghui; Zhou, Jianjun; Kong, Cen

    2014-05-01

    AlGaN/GaN high-electron-mobility transistor (HEMT) structures with two and three Al-containing step-graded AlGaN buffer layers (BLs) were grown on silicon (111) substrates by metal organic chemical vapor deposition. Considerable tensile stress was observed in the GaN grown with only two 0.8 µm AlGaN BLs, while a large in-plane compression in GaN grown with three 2.3 µm AlGaN BLs. The reverse gate leakage current in the HEMT with three AlGaN BLs was approximately 0.1 µA/mm, which was more than one order of magnitude smaller than that for the HEMT with two AlGaN BLs. A three-terminal off-state breakdown voltage of 265 V and a vertical gate-to-substrate breakdown voltage of 510 V were obtained in the HEMT with three AlGaN BLs. Detailed analysis was performed on the basis of the structural properties of AlGaN/GaN heterostructures.

  16. Effects of Si-doping on structural, electrical, and optical properties of polar and non-polar AlGaN epi-layers

    NASA Astrophysics Data System (ADS)

    Yang, Hongquan; Zhang, Xiong; Wang, Shuchang; Wang, Yi; Luan, Huakai; Dai, Qian; Wu, Zili; Zhao, Jianguo; Cui, Yiping

    2016-08-01

    The polar (0001)-oriented c-plane and non-polar (11 2 bar 0) -oriented a-plane wurtzite AlGaN epi-layers were successfully grown on polar (0001)-oriented c-plane and semi-polar (1 1 bar 02) -oriented r-plane sapphire substrates, respectively with various Si-doping levels in a low pressure metal organic chemical vapor deposition (MOCVD) system. The morphological, structural, electrical, and optical properties of the polar and non-polar AlGaN epi-layers were studied with scanning electron microscopy (SEM), X-ray diffraction (XRD), Hall effect, and Raman spectroscopy. The characterization results show that Si dopants incorporated into the polar and non-polar AlGaN films induced a relaxation of compressive residual strain and a generation of biaxial tensile strain on the surface in consequence of the dislocation climbing. In particular, it was found that the Si-induced compressive strain relaxation in the non-polar AlGaN samples can be promoted by the structural anisotropy as compared with the polar counterparts. The gradually increased relaxation of compressive residual strain in both polar and non-polar AlGaN samples with increasing Si-doping level was attributed to the Si-induced enhancement in the opportunity for the dislocations to interact and annihilate. This implies that the crystal quality for both polar and non-polar AlGaN epi-layers can be remarkably improved by Si-doping.

  17. Defects reduction in a-plane AlGaN epi-layers grown on r-plane sapphire substrates by metal organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Zhao, Jianguo; Zhang, Xiong; Dai, Qian; Wang, Nan; Wu, Zili; Wang, Shuchang; Cui, Yiping

    2017-01-01

    Nonpolar a-plane AlGaN epi-layers were grown on a semi-polar r-plane sapphire substrate with an innovative two-way pulsed-flows metal organic chemical vapor deposition growth technology. A root-mean-square value of 1.79 nm was achieved, and the relative light transmittance of the a-plane AlGaN epi-layer was enhanced by 36.9%. These results reveal that the innovative growth method is able to improve the surface morphology and reduce the defect density in nonpolar a-plane Al x Ga1- x N epi-layers, particularly those with an Al composition greater than 0.5, which are key materials for the fabrication of nonpolar AlGaN-based high light emission efficiency deep-ultraviolet light-emitting diodes.

  18. Dislocation blocking by AlGaN hot electron injecting layer in the epitaxial growth of GaN terahertz Gunn diode

    NASA Astrophysics Data System (ADS)

    Li, Liang; Yang, Lin'an; Zhang, Jincheng; Hao, Yue

    2013-09-01

    This paper reports an efficient method to improve the crystal quality of GaN Gunn diode with AlGaN hot electron injecting layer (HEI). An evident reduction of screw dislocation and edge dislocation densities is achieved by the strain management and the enhanced lateral growth in high temperature grown AlGaN HEI layer. Compared with the top hot electron injecting layer (THEI) structure, the bottom hot electron injecting layer (BHEI) structure enhances the crystal quality of transit region due to the growth sequence modulation of HEI layer. A high Hall mobility of 2934 cm2/Vs at 77 K, a nearly flat downtrend of Hall mobility at the temperature ranging from 300 to 573 K, a low intensity of ratio of yellow luminescence band to band edge emission, a narrow band edge emission line-width, and a smooth surface morphology are observed for the BHEI structural epitaxy of Gunn diode, which indicates that AlGaN BHEI structure is a promising candidate for fabrication of GaN Gunn diodes in terahertz regime.

  19. Effect of surface pretreatment on interfacial chemical bonding states of atomic layer deposited ZrO{sub 2} on AlGaN

    SciTech Connect

    Ye, Gang; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Ang, Kian Siong; Wang, Hong; Liu, Zhi Hong

    2015-09-15

    Atomic layer deposition (ALD) of ZrO{sub 2} on native oxide covered (untreated) and buffered oxide etchant (BOE) treated AlGaN surface was analyzed by utilizing x-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy. Evidenced by Ga–O and Al–O chemical bonds by XPS, parasitic oxidation during deposition is largely enhanced on BOE treated AlGaN surface. Due to the high reactivity of Al atoms, more prominent oxidation of Al atoms is observed, which leads to thicker interfacial layer formed on BOE treated surface. The results suggest that native oxide on AlGaN surface may serve as a protecting layer to inhibit the surface from further parasitic oxidation during ALD. The findings provide important process guidelines for the use of ALD ZrO{sub 2} and its pre-ALD surface treatments for high-k AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors and other related device applications.

  20. Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN

    NASA Astrophysics Data System (ADS)

    Clemente, Iosif E.; Miakonkikh, Andrey V.

    2016-12-01

    Atomic layer deposition (ALD) of Al2O3 on Si and AlGaN substrates was studied in situ by means of spectral ellipsometry. Method was used for optimization of process of atomic layer deposition. Optical model takes into account all layers of transparent structure typical for gallium nitride devices Al2O3/AlGaN/AlN/GaN. Developed model is able to measure in situ temperature of wafer before the process and its change during the deposition which is critical for development of new process and understanding of chemical reactions. Difference in temperature between chuck and sample were calculated. Spectral ellipsometry was used to determine initial nucleation lag of film growth which is different on silicon and AlGaN surface and chemical transient during the first steps of deposition. Removal of native oxide in AlGaN structures could play key role in observed effects of passivation GaN transistor structures by alumina.

  1. Improved mobility of AlGaN channel heterojunction material using an AlGaN/GaN composite buffer layer

    NASA Astrophysics Data System (ADS)

    Wen, Hui-Juan; Zhang, Jin-Cheng; Lu, Xiao-Li; Wang, Zhi-Zhe; Ha, Wei; Ge, Sha-Sha; Cao, Rong-Tao; Hao, Yue

    2014-03-01

    The quality of an AlGaN channel heterojunction on a sapphire substrate is massively improved by using an AlGaN/GaN composite buffer layer. We demonstrate an Al0.4Ga0.5N/Al0.18Ga0.82N heterojunction with a state-of-the-art mobility of 815 cm2/(V·s) and a sheet resistance of 890 Ω/□ under room temperature. The crystalline quality and the electrical properties of the AlGaN heterojunction material are analyzed by atomic force microscopy, high-resolution X-ray diffraction, and van der Pauw Hall and capacitance—voltage (C—V) measurements. The results indicate that the improved electrical properties should derive from the reduced surface roughness and low dislocation density.

  2. Growth and Implementation of Carbon-Doped AlGaN Layers for Enhancement-Mode HEMTs on 200 mm Si Substrates

    NASA Astrophysics Data System (ADS)

    Su, Jie; Posthuma, Niels; Wellekens, Dirk; Saripalli, Yoga N.; Decoutere, Stefaan; Arif, Ronald; Papasouliotis, George D.

    2016-12-01

    We are reporting the growth of AlGaN based enhancement-mode high electron mobility transistors (HEMTs) on 200 mm silicon (111) substrates using a single wafer metalorganic chemical vapor deposition reactor. It is found that TMAl pre-dosing conditions are critical in controlling the structural quality, surface morphology, and wafer bow of the HEMT stack. Optimal structural quality and pit-free surface are demonstrated for AlGaN HEMTs with pre-dosing temperature at 750°C. Intrinsically, carbon-doped AlGaN, is used as the current blocking layer in the HEMT structures. The lateral buffer breakdown and device breakdown characteristics, reach 400 V at a leakage current of 1 μA/mm measured at 150°C. The fabricated HEMT devices, with a Mg doped p-GaN gate layer, are operating in enhancement mode reaching a positive threshold voltage of 2-2.5 V, a low on-resistance of 10.5 Ω mm with a high drain saturation current of 0.35 A/mm, and a low forward bias gate leakage current of 0.5 × 10-6 A/mm ( V gs = 7 V). Tight distribution of device parameters across the 200 mm wafers and over repeat process runs is observed.

  3. Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO{sub 2} grown by atomic layer deposition

    SciTech Connect

    Ye, Gang; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Ang, Kian Siong; Wang, Hong; Liu, Zhi Hong

    2015-03-02

    The effect of post-deposition annealing on chemical bonding states at interface between Al{sub 0.5}Ga{sub 0.5}N and ZrO{sub 2} grown by atomic layer deposition (ALD) is studied by angle-resolved x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. It has been found that both of Al-O/Al 2p and Ga-O/Ga 3d area ratio decrease at annealing temperatures lower than 500 °C, which could be attributed to “clean up” effect of ALD-ZrO{sub 2} on AlGaN. Compared to Ga spectra, a much larger decrease in Al-O/Al 2p ratio at a smaller take-off angle θ is observed, which indicates higher effectiveness of the passivation of Al-O bond than Ga-O bond through “clean up” effect near the interface. However, degradation of ZrO{sub 2}/AlGaN interface quality due to re-oxidation at higher annealing temperature (>500 °C) is also found. The XPS spectra clearly reveal that Al atoms at ZrO{sub 2}/AlGaN interface are easier to get oxidized as compared with Ga atoms.

  4. Influence of high-temperature AlN intermediate layer on the optical properties of MOCVD grown AlGaN films

    NASA Astrophysics Data System (ADS)

    Xie, Deng; Qiu, Zhi Ren; Liu, Yao; Talwar, Devki N.; Wan, Lingyu; Zhang, Xiong; Mei, Ting; Ferguson, Ian T.; Feng, Zhe Chuan

    2017-02-01

    By combining spectroscopic ellipsometry (SE) and optical transmission (OT) characterization methods we have systematically investigated the influence of AlN intermediate layer and AlN transition layer on the optical properties of AlGaN epilayers grown on sapphire by metalorganic chemical vapor deposition (MOCVD) method. Most dielectric functions of III-nitrides obtained by different research groups show significant band-tail absorption—which is not anticipated for such a direct band gap material. The dielectric functions are studied for a series of AlGaN/AlN/Al2O3 structures, with a four-layer model taking into account both high temperature grown AlN layer and low temperature grown AlN layer. The results obtained by fitting the optical parameters to experimental data show that the band-tail absorption should originate from the transition layer. AlGaN film without high temperature AlN epilayer exhibited a redshift of band gap around 0.24 eV.

  5. AlN barrier HFETs with AlGaN channels to shift the threshold voltage to higher positive values: a proposal

    NASA Astrophysics Data System (ADS)

    Hahn, Herwig; Reuters, Ben; Kalisch, Holger; Vescan, Andrei

    2013-07-01

    The need for efficient power converters is currently a major driver of GaN-on-Si research activities. Among several areas, a large research field is the engineering of enhancement mode devices. Several solutions have been provided in the past. Yet, almost all solutions either lack the compatibility with epitaxy on Si substrates (which is a necessity in terms of cost) or suffer from low positive threshold voltages (Vth) below +1 V. In power applications, there is definitely a need for higher values of Vth. In this paper, we propose the utilization of AlN barriers in conjunction with AlGaN channels to obtain Vth values of more than +3 V while still maintaining the low power-switching losses obtained in GaN-based heterostructure field-effect transistors.

  6. Improving hole injection and carrier distribution in InGaN light-emitting diodes by removing the electron blocking layer and including a unique last quantum barrier

    SciTech Connect

    Cheng, Liwen Chen, Haitao; Wu, Shudong

    2015-08-28

    The effects of removing the AlGaN electron blocking layer (EBL), and using a last quantum barrier (LQB) with a unique design in conventional blue InGaN light-emitting diodes (LEDs), were investigated through simulations. Compared with the conventional LED design that contained a GaN LQB and an AlGaN EBL, the LED that contained an AlGaN LQB with a graded-composition and no EBL exhibited enhanced optical performance and less efficiency droop. This effect was caused by an enhanced electron confinement and hole injection efficiency. Furthermore, when the AlGaN LQB was replaced with a triangular graded-composition, the performance improved further and the efficiency droop was lowered. The simulation results indicated that the enhanced hole injection efficiency and uniform distribution of carriers observed in the quantum wells were caused by the smoothing and thinning of the potential barrier for the holes. This allowed a greater number of holes to tunnel into the quantum wells from the p-type regions in the proposed LED structure.

  7. Multi-layer waste containment barrier

    SciTech Connect

    Smith, Ann Marie; Gardner, Bradley M.; Nickelson, David F.

    1999-01-01

    An apparatus for constructing an underground containment barrier for containing an in-situ portion of earth. The apparatus includes an excavating device for simultaneously (i) excavating earthen material from beside the in-situ portion of earth without removing the in-situ portion and thereby forming an open side trench defined by opposing earthen sidewalls, and (ii) excavating earthen material from beneath the in-situ portion of earth without removing the in-situ portion and thereby forming a generally horizontal underground trench beneath the in-situ portion defined by opposing earthen sidewalls. The apparatus further includes a barrier-forming device attached to the excavating device for simultaneously forming a side barrier within the open trench and a generally horizontal, multi-layer barrier within the generally horizontal trench. The multi-layer barrier includes at least a first layer and a second layer.

  8. AlGaN-Cladding-Free m-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers

    NASA Astrophysics Data System (ADS)

    Farrell, Robert M.; Haeger, Daniel A.; Hsu, Po Shan; Hardy, Matthew T.; Kelchner, Kathryn M.; Fujito, Kenji; Feezell, Daniel F.; Mishra, Umesh K.; DenBaars, Steven P.; Speck, James S.; Nakamura, Shuji

    2011-09-01

    We present a new method of improving the accuracy and reproducibility of dry etching processes for ridge waveguide InGaN/GaN laser diodes (LDs). A GaN:Al0.09Ga0.91N etch rate selectivity of 11:1 was demonstrated for an m-plane LD with a 40 nm p-Al0.09Ga0.91N etch stop layer (ESL) surrounded by Al-free cladding layers, establishing the effectiveness of AlGaN-based ESLs for controlling etch depth in ridge waveguide InGaN/GaN LDs. These results demonstrate the potential for integrating AlGaN ESLs into commercial device designs where accurate control of the etch depth of the ridge waveguide is necessary for stable, kink-free operation at high output powers.

  9. Microscopic potential fluctuations in Si-doped AlGaN epitaxial layers with various AlN molar fractions and Si concentrations

    SciTech Connect

    Kurai, Satoshi Yamada, Yoichi; Miyake, Hideto; Hiramatsu, Kazumasa

    2016-01-14

    Nanoscopic potential fluctuations of Si-doped AlGaN epitaxial layers with the AlN molar fraction varying from 0.42 to 0.95 and Si-doped Al{sub 0.61}Ga{sub 0.39}N epitaxial layers with Si concentrations of 3.0–37 × 10{sup 17 }cm{sup −3} were investigated by cathodoluminescence (CL) imaging combined with scanning electron microscopy. The spot CL linewidths of AlGaN epitaxial layers broadened as the AlN molar fraction was increased to 0.7, and then narrowed at higher AlN molar fractions. The experimental linewidths were compared with the theoretical prediction from the alloy broadening model. The trends displayed by our spot CL linewidths were consistent with calculated results at AlN molar fractions of less than about 0.60, but the spot CL linewidths were markedly broader than the calculated linewidths at higher AlN molar fractions. The dependence of the difference between the spot CL linewidth and calculated line broadening on AlN molar fraction was found to be similar to the dependence of reported S values, indicating that the vacancy clusters acted as the origin of additional line broadening at high AlN molar fractions. The spot CL linewidths of Al{sub 0.61}Ga{sub 0.39}N epitaxial layers with the same Al concentration and different Si concentrations were nearly constant in the entire Si concentration range tested. From the comparison of reported S values, the increase of V{sub Al} did not contribute to the linewidth broadening, unlike the case of the V{sub Al} clusters.

  10. Method for forming a barrier layer

    DOEpatents

    Weihs, Timothy P.; Barbee, Jr., Troy W.

    2002-01-01

    Cubic or metastable cubic refractory metal carbides act as barrier layers to isolate, adhere, and passivate copper in semiconductor fabrication. One or more barrier layers of the metal carbide are deposited in conjunction with copper metallizations to form a multilayer characterized by a cubic crystal structure with a strong (100) texture. Suitable barrier layer materials include refractory transition metal carbides such as vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (Cr.sub.3 C.sub.2), tungsten carbide (WC), and molybdenum carbide (MoC).

  11. Enhanced Densification of SDC Barrier Layers

    SciTech Connect

    Hardy, John S.; Templeton, Jared W.; Lu, Zigui; Stevenson, Jeffry W.

    2011-09-12

    This technical report explores the Enhanced Densification of SCD Barrier Layers A samaria-doped ceria (SDC) barrier layer separates the lanthanum strontium cobalt ferrite (LSCF) cathode from the yttria-stabilized zirconia (YSZ) electrolyte in a solid oxide fuel cell (SOFC) to prevent the formation of electrically resistive interfacial SrZrO{sub 3} layers that arise from the reaction of Sr from the LSCF with Zr from the YSZ. However, the sintering temperature of this SDC layer must be limited to {approx}1200 C to avoid extensive interdiffusion between SDC and YSZ to form a resistive CeO{sub 2}-ZrO{sub 2} solid solution. Therefore, the conventional SDC layer is often porous and therefore not as impervious to Sr-diffusion as would be desired. In the pursuit of improved SOFC performance, efforts have been directed toward increasing the density of the SDC barrier layer without increasing the sintering temperature. The density of the SDC barrier layer can be greatly increased through small amounts of Cu-doping of the SDC powder together with increased solids loading and use of an appropriate binder system in the screen print ink. However, the resulting performance of cells with these barrier layers did not exhibit the expected increase in accordance with that achieved with the prototypical PLD SDC layer. It was determined by XRD that increased sinterability of the SDC also results in increased interdiffusivity between the SDC and YSZ, resulting in formation of a highly resistive solid solution.

  12. Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

    SciTech Connect

    Malinverni, M. Lamy, J.-M.; Martin, D.; Grandjean, N.; Feltin, E.; Dorsaz, J.; Castiglia, A.; Rossetti, M.; Duelk, M.; Vélez, C.

    2014-12-15

    We demonstrate state-of-the-art p-type (Al)GaN layers deposited at low temperature (740 °C) by ammonia molecular beam epitaxy (NH{sub 3}-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGaN quantum well active region. Typical p-type GaN resistivities and contact resistances are 0.4 Ω cm and 5 × 10{sup −4} Ω cm{sup 2}, respectively. As a test bed, we fabricated a hybrid laser structure emitting at 400 nm combining n-type AlGaN cladding and InGaN active region grown by metal-organic vapor phase epitaxy, with the p-doped waveguide and cladding layers grown by NH{sub 3}-MBE. Single-mode ridge-waveguide LD exhibits a threshold voltage as low as 4.3 V for an 800 × 2 μm{sup 2} ridge dimension and a threshold current density of ∼5 kA cm{sup −2} in continuous wave operation. The series resistance of the device is 6 Ω and the resistivity is 1.5 Ω cm, confirming thereby the excellent electrical properties of p-type Al{sub 0.06}Ga{sub 0.94}N:Mg despite the low growth temperature.

  13. Alternating-Composition Layered Ceramic Barrier Coatings

    NASA Technical Reports Server (NTRS)

    Miller, Robert A.; Zhu, Dongming

    2008-01-01

    Ceramic thermal and environmental barrier coatings (T/EBCs) that contain multiple layers of alternating chemical composition have been developed as improved means of protecting underlying components of gas-turbine and other heat engines against both corrosive combustion gases and high temperatures.

  14. Zinc-blende (Cubic) GaN and AlGaN Layers, Structures and Bulk Crystals by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Novikov, Sergei V.; Zainal, Norzaini; Akimov, Andrey V.; Staddon, Chris R.; Foxon, C. Thomas; Kent, Anthony J.

    2010-11-01

    We have studied the growth of zinc-blende GaN and AlGaN layers, structures and bulk crystals by molecular beam epitaxy (MBE). We have developed a process for growth by MBE of free-standing cubic GaN layers. Undoped thick cubic GaN films were grown on semi-insulating GaAs (001) substrates by a modified plasma-assisted molecular beam epitaxy (PA-MBE) method and were removed from the GaAs substrate after the growth. The resulting free-standing GaN wafers with thicknesses in the 30-100 μm range may be used as substrates for further epitaxy of cubic GaN-based structures and devices. We have developed procedures to cleave the wafers into 10×10 mm2 square substrates and to polish them to produce epi-ready surfaces. The first GaN/InGaN LEDs on our zinc-blende GaN substrates have been demonstrated by our collaborators at Sharp Laboratories of Europe.

  15. Composite layers for barrier coatings on polymers

    NASA Astrophysics Data System (ADS)

    Brochhagen, Markus; Vorkoetter, Christoph; Boeke, Marc; Benedikt, Jan

    2016-09-01

    Amorphous hydrogenated carbon (a-C:H), amorphous hydrogenated silicon (a-Si:H), and SiO2 thin films are of high interest because they can serve as a gas barrier on polymers. To understand how the coating changes the overall barrier properties of the thin film-polymer system, optical, mechanical, and barrier properties have to be studied. One of the important characteristic of such coatings is their compressive stress, which has beneficial as well as unwanted effects. The stress can cause deformation of the bulk material or de-lamination of the film. The mechanical stability can be improved and it is possible to reduce cracking due to elongation, as the compressive stress can compensate externally applied tensile strain. Stress and mechanical properties of composite layers can be manipulated directly by embedding nanoparticles in an amorphous matrix film. Therefore nanoparticles and amorphous layers are investigated before they can be assembled in a composite layer. Growth rates as well as optical and mechanical properties are explored in this work. An inductively coupled plasma source was used for all amorphous layers and the silicon nanoparticles with diameter around 5 nm were produced in a capacitively coupled plasma reactor. This work is supported by DFG within SFB-TR87.

  16. Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

    PubMed Central

    Cheng, Jianpeng; Yang, Xuelin; Sang, Ling; Guo, Lei; Zhang, Jie; Wang, Jiaming; He, Chenguang; Zhang, Lisheng; Wang, Maojun; Xu, Fujun; Tang, Ning; Qin, Zhixin; Wang, Xinqiang; Shen, Bo

    2016-01-01

    By employing a single AlGaN layer with low Al composition, high quality and uniformity AlGaN/GaN heterostructures have been successfully grown on Si substrates by metal-organic chemical vapor deposition (MOCVD). The heterostructures exhibit a high electron mobility of 2150 cm2/Vs with an electron density of 9.3 × 1012 cm−2. The sheet resistance is 313 ± 4 Ω/◻ with ±1.3% variation. The high uniformity is attributed to the reduced wafer bow resulting from the balance of the compressive stress induced and consumed during the growth, and the thermal tensile stress induced during the cooling down process. By a combination of theoretical calculations and in situ wafer curvature measurements, we find that the compressive stress consumed by the dislocation relaxation (~1.2 GPa) is comparable to the value of the thermal tensile stress (~1.4 GPa) and we should pay more attention to it during growth of GaN on Si substrates. Our results demonstrate a promising approach to simplifying the growth processes of GaN-on-Si to reduce the wafer bow and lower the cost while maintaining high material quality. PMID:26960730

  17. Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

    NASA Astrophysics Data System (ADS)

    Cheng, Jianpeng; Yang, Xuelin; Sang, Ling; Guo, Lei; Zhang, Jie; Wang, Jiaming; He, Chenguang; Zhang, Lisheng; Wang, Maojun; Xu, Fujun; Tang, Ning; Qin, Zhixin; Wang, Xinqiang; Shen, Bo

    2016-03-01

    By employing a single AlGaN layer with low Al composition, high quality and uniformity AlGaN/GaN heterostructures have been successfully grown on Si substrates by metal-organic chemical vapor deposition (MOCVD). The heterostructures exhibit a high electron mobility of 2150 cm2/Vs with an electron density of 9.3 × 1012 cm‑2. The sheet resistance is 313 ± 4 Ω/◻ with ±1.3% variation. The high uniformity is attributed to the reduced wafer bow resulting from the balance of the compressive stress induced and consumed during the growth, and the thermal tensile stress induced during the cooling down process. By a combination of theoretical calculations and in situ wafer curvature measurements, we find that the compressive stress consumed by the dislocation relaxation (~1.2 GPa) is comparable to the value of the thermal tensile stress (~1.4 GPa) and we should pay more attention to it during growth of GaN on Si substrates. Our results demonstrate a promising approach to simplifying the growth processes of GaN-on-Si to reduce the wafer bow and lower the cost while maintaining high material quality.

  18. On the increased efficiency in InGaN-based multiple quantum wells emitting at 530-590 nm with AlGaN interlayers

    NASA Astrophysics Data System (ADS)

    Koleske, D. D.; Fischer, A. J.; Bryant, B. N.; Kotula, P. G.; Wierer, J. J.

    2015-04-01

    InGaN/AlGaN/GaN-based multiple quantum wells (MQWs) with AlGaN interlayers (ILs) are investigated, specifically to examine the fundamental mechanisms behind their increased radiative efficiency at wavelengths of 530-590 nm. The AlzGa1-zN (z~0.38) IL is ~1-2 nm thick, and is grown after and at the same growth temperature as the ~3 nm thick InGaN quantum well (QW). This is followed by an increase in temperature for the growth of a ~10 nm thick GaN barrier layer. The insertion of the AlGaN IL within the MQW provides various benefits. First, the AlGaN IL allows for growth of the InxGa1-xN QW well below typical growth temperatures to achieve higher x (up to~0.25). Second, annealing the IL capped QW prior to the GaN barrier growth improves the AlGaN IL smoothness as determined by atomic force microscopy, improves the InGaN/AlGaN/GaN interface quality as determined from scanning transmission electron microscope images and x-ray diffraction, and increases the radiative efficiency by reducing non-radiative defects as determined by time-resolved photoluminescence measurements. Finally, the AlGaN IL increases the spontaneous and piezoelectric polarization induced electric fields acting on the InGaN QW, providing an additional red-shift to the emission wavelength as determined by Schrodinger-Poisson modeling and fitting to the experimental data. The relative impact of increased indium concentration and polarization fields on the radiative efficiency of MQWs with AlGaN ILs is explored along with implications to conventional longer wavelength emitters.

  19. Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

    SciTech Connect

    Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Rajan, Siddharth

    2016-09-19

    Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and the light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polarization engineered tunnel junctions for ultra-wide bandgap AlGaN (Al mole fraction >50%) materials towards highly efficient UV LEDs. We demonstrate that polarization-induced three dimensional charge is beneficial in reducing tunneling barriers especially for high composition AlGaN tunnel junctions. In addition, the design of graded tunnel junction structures could lead to low tunneling resistance below 10–3 Ω cm2 and low voltage consumption below 1 V (at 1 kA/cm2) for high composition AlGaN tunnel junctions. Experimental demonstration of 292 nm emission was achieved through non-equilibrium hole injection into wide bandgap materials with bandgap energy larger than 4.7 eV, and detailed modeling of tunnel junctions shows that they can be engineered to have low resistance and can enable efficient emitters in the UV-C wavelength range.

  20. Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

    DOE PAGES

    Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; ...

    2016-09-19

    Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and the light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polarization engineered tunnel junctions for ultra-wide bandgap AlGaN (Al mole fraction >50%) materials towards highly efficient UV LEDs. We demonstrate that polarization-induced three dimensional charge is beneficial in reducing tunneling barriers especially for high composition AlGaN tunnel junctions. In addition, the design of graded tunnel junction structures could lead to low tunneling resistance below 10–3 Ω cm2 and low voltage consumptionmore » below 1 V (at 1 kA/cm2) for high composition AlGaN tunnel junctions. Experimental demonstration of 292 nm emission was achieved through non-equilibrium hole injection into wide bandgap materials with bandgap energy larger than 4.7 eV, and detailed modeling of tunnel junctions shows that they can be engineered to have low resistance and can enable efficient emitters in the UV-C wavelength range.« less

  1. Surface photovoltage studies of p-type AlGaN layers after reactive-ion etching

    NASA Astrophysics Data System (ADS)

    McNamara, J. D.; Phumisithikul, K. L.; Baski, A. A.; Marini, J.; Shahedipour-Sandvik, F.; Das, S.; Reshchikov, M. A.

    2016-10-01

    The surface photovoltage (SPV) technique was used to study the surface and electrical properties of Mg-doped, p-type AlxGa1-xN (0.06 < x < 0.17) layers. SPV measurements reveal significant deviation from previous SPV studies on p-GaN:Mg thin films and from the predictions of a thermionic model for the SPV behavior. In particular, the SPV of the p-AlGaN:Mg layers exhibited slower-than-expected transients under ultraviolet illumination and delayed restoration to the initial dark value. The slow transients and delayed restorations can be attributed to a defective surface region which interferes with normal thermionic processes. The top 45 nm of the p-AlGaN:Mg layer was etched using a reactive-ion etch which caused the SPV behavior to be substantially different. From this study, it can be concluded that a defective, near-surface region is inhibiting the change in positive surface charge by allowing tunneling or hopping conductivity of holes from the bulk to the surface, or by the trapping of electrons traveling to the surface by a high concentration of defects in the near-surface region. Etching removes the defective layer and reveals a region of presumably higher quality, as evidenced by substantial changes in the SPV behavior.

  2. Barrier layers as resonators on deep centers

    NASA Astrophysics Data System (ADS)

    Oreshkin, P. T.

    1990-11-01

    A response is given to the paper of L. S. Barman and A. A. Lebedev (Izv. Vyssh. Uchebn. Zaved. SSSR, Fiz., No. 12, 88 90 (1989)), and it is shown that the arguments given there are not satisfactory. New experimental data have been obtained for n+-p junctions in Si, where square reverse-bias pulses U < Ures are observed to shift the DLTS peaks. Here Ures is the magnitude of the pulse for which all activation-drift processes become activation-transit processes and the barrier layer operates as a freshly prepared resonator on deep centers (see the paper by P. T. Oreshkin, Elektronnaya Tekhnika, Ser. 3, Mikroelektronika, No. 4 (128), 12 20 (1988).

  3. On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer

    SciTech Connect

    Zhang, Zi-Hui; Ji, Yun; Liu, Wei; Tiam Tan, Swee; Kyaw, Zabu; Ju, Zhengang; Zhang, Xueliang; Hasanov, Namig; Lu, Shunpeng; Zhang, Yiping; Zhu, Binbin; Wei Sun, Xiao E-mail: volkan@stanfordalumni.org; Volkan Demir, Hilmi E-mail: volkan@stanfordalumni.org

    2014-02-17

    In this work, the origin of electron blocking effect of n-type Al{sub 0.25}Ga{sub 0.75}N electron blocking layer (EBL) for c+ InGaN/GaN light-emitting diodes has been investigated through dual-wavelength emission method. It is found that the strong polarization induced electric field within the n-EBL reduces the thermal velocity and correspondingly the mean free path of the hot electrons. As a result, the electron capture efficiency of the multiple quantum wells is enhanced, which significantly reduces the electron overflow from the active region and increases the radiative recombination rate with holes.

  4. Inductively coupled BCl3/Cl2 /Ar plasma etching of Al-rich AlGaN

    DOE PAGES

    Douglas, Erica A.; Sanchez, Carlos A.; Kaplar, Robert J.; ...

    2016-12-01

    Varying atomic ratios in compound semiconductors is well known to have large effects on the etching properties of the material. The use of thin device barrier layers, down to 25 nm, adds to the fabrication complexity by requiring precise control over etch rates and surface morphology. The effects of bias power and gas ratio of BCl3 to Cl2 for inductively coupled plasma etching of high Al content AlGaN were contrasted with AlN in this study for etch rate, selectivity, and surface morphology. Etch rates were greatly affected by both bias power and gas chemistry. Here we detail the effects ofmore » small variations in Al composition for AlGaN and show substantial changes in etch rate with regards to bias power as compared to AlN.« less

  5. Elimination of AlGaN epilayer cracking by spatially patterned AlN mask

    NASA Astrophysics Data System (ADS)

    Sarzyński, Marcin; Kryśko, Marcin; Targowski, Grzegorz; Czernecki, Robert; Sarzyńska, Agnieszka; Libura, Adam; Krupczyński, Wiktor; Perlin, Piotr; Leszczyński, Michał

    2006-03-01

    The inherent problem in III-nitride technology is the cracking of AlGaN layers that results from lattice mismatch between AlGaN and GaN. In case of thin substrates (30-90μm), such as, bulk GaN grown by the high-pressure/high-temperature method, the bowing of AlGaN /GaN strained structures becomes an additional problem. To eliminate cracking and bowing, AlGaN layers were grown on GaN substrates with an AlN mask patterned to form 3-15μm wide windows. In the 3μm window, the AlGaN layer was not cracked, although its thickness and Al composition exceeded critical values for growth on nonpatterned substrates. Dislocation density in the windows was of 5×106/cm2.

  6. AlN and AlGaN layers grown on Si(111) substrate by mixed-source hydride vapor phase epitaxy method

    NASA Astrophysics Data System (ADS)

    Jeon, Hunsoo; Jeon, Injun; Lee, Gang Seok; Bae, Sung Geun; Ahn, Hyung Soo; Yang, Min; Yi, Sam Nyung; Yu, Young Moon; Honda, Yoshio; Sawaki, Nobuhiko; Kim, Suck-Whan

    2017-01-01

    High Al-composition AlGaN and AlN epilayers were grown directly on Si(111) substrate by a hydride vapor phase epitaxy (HVPE) method with a melted mixed source in a graphite boat set in a source zone with high temperatures of T = 700 and 800 °C, respectively. The presence of the Ga material in the mixed source of Ga and Al promoted the growth of AlN and AlGaN epilayers in the growth zone. When the temperature in the source zone was 800 °C, the crystalline quality of the AlN and AlGaN epilayers increased as the ratio of Ga to Al increased, and the optimum mix ratio of Ga to Al for the growth of AlN epilayers was approximately 0.35-0.42, obtained from a numerical fitting analysis of the X-ray diffraction (XRD) data for these epilayers. It appears that they can be grown directly by our melted-mixed-source HVPE method in a high-temperature source zone.

  7. Multilayer article having stabilized zirconia outer layer and chemical barrier layer

    NASA Technical Reports Server (NTRS)

    Lee, Kang N. (Inventor); Bansal, Narottam P. (Inventor)

    2004-01-01

    A multilayer article includes a substrate that includes at least one of a ceramic compound and a Si-containing metal alloy. An outer layer includes stabilized zirconia. Intermediate layers are located between the outer layer and the substrate and include a mullite-containing layer and a chemical barrier layer. The mullite-containing layer includes 1) mullite or 2) mullite and an alkaline earth metal aluminosilicate. The chemical barrier layer is located between the mullite-containing layer and the outer layer. The chemical barrier layer includes at least one of mullite, hafnia, hafnium silicate and rare earth silicate (e.g., at least one of RE.sub.2 SiO.sub.5 and RE.sub.2 Si.sub.2 O.sub.7 where RE is Sc or Yb). The multilayer article is characterized by the combination of the chemical barrier layer and by its lack of a layer consisting essentially of barium strontium aluminosilicate between the mullite-containing layer and the chemical barrier layer. Such a barium strontium aluminosilicate layer may undesirably lead to the formation of a low melting glass or unnecessarily increase the layer thickness with concomitant reduced durability of the multilayer article. In particular, the chemical barrier layer may include at least one of hafnia, hafnium silicate and rare earth silicate.

  8. Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

    DOEpatents

    Carlson, David E.

    1980-01-01

    Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

  9. Capillary barrier effect from underlying coarser soil layer

    SciTech Connect

    Stormont, J.C.; Anderson, C.E.

    1999-08-01

    Infiltration tests were conducted on soil columns of silty sand over pea gravel, concrete sand over pea gravel, and silty sand over concrete sand to investigate the capillary barrier effect of an underlying coarser soil layer. Water movement across the interface occurred when the suction head at the interface reached the breakthrough head of the coarser lower soil layer, defined as the suction head at which the coarser layer first became conductive, regardless of infiltration rate or the properties of the overlying finer soil layer. Thus, the coarser lower soil layer controlled breakthrough in this study. After infiltration was terminated, the suction head near the interface increased above the breakthrough head and the barrier was restored. The breakthrough head did not change substantially after eight test cycles of breakthrough and restoration for a capillary barrier with a pea gravel as the coarser lower soil layer. The barrier formed with the concrete sand as the coarser layer permitted breakthrough at a greater suction head than did the barrier with the pea gravel, indicating that the more uniform and coarse the lower soil layer is, the more effective the capillary barrier.

  10. Plasma-assisted molecular beam epitaxy of Al(Ga)N layers and quantum well structures for optically pumped mid-UV lasers on c-Al2O3

    NASA Astrophysics Data System (ADS)

    Ivanov, S. V.; Nechaev, D. V.; Sitnikova, A. A.; Ratnikov, V. V.; Yagovkina, M. A.; Rzheutskii, N. V.; Lutsenko, E. V.; Jmerik, V. N.

    2014-06-01

    This paper reports on novel approaches developed for plasma-assisted molecular beam epitaxy of Al-rich AlGaN epilayers and quantum well heterostructures on c-sapphire, which allowed us to fabricate low-threshold optically-pumped separate confinement heterostructure lasers emitting in the mid-UV spectral range (258-290 nm) with the threshold power density below 600 kW cm-2. The optimum buffer structure has been developed which provides lowering the near-surface threading dislocation density down to 1.5 × 108 and 3 × 109 cm-2 for screw and edge types, respectively, and improving the surface morphology (rms < 0.7 nm at the area of 3 × 3 μm-2). It comprises the high-temperature (780 °C) migration enhanced epitaxy growth of a (30-70) nm thick AlN nucleation layer on c-Al2O3, followed by a 2 μm thick AlN buffer grown under the metal-rich conditions in the Al-flux modulation mode and containing several (up to 6) ultra-thin (˜3 nm) GaN interlayers grown at N-rich conditions. Proper strain engineering in AlGaN single quantum well heterostructure grown atop of the AlN buffer layer enables one to preserve dominant TE polarization of both spontaneous and stimulated emission even at shortest obtained wavelength (258 nm). The threshold power density of stimulated emission as low as 150 kW cm-2 at 289 nm for a single quantum well laser structure has been demonstrated.

  11. Efficiency droop enhancement in AlGaN deep ultraviolet light-emitting diodes by making whole barriers but the bottom Mg doped

    NASA Astrophysics Data System (ADS)

    Sun, Jie; Sun, Huiqing; Yi, Xinyan; Yang, Xian; Fan, Xuancong; Zhang, Cheng; Zhang, Zhuding; Guo, Zhiyou

    2016-09-01

    Ultra violet light-emitting diodes (UVLEDs) with different types of Mg-doped barriers have been studied. The energy band diagrams, internal quantum efficiency, total output power and radiative recombination rate are investigated by APSYS software. The simulation results show that the UVLED with only a p-doped top barrier get little enhancement comparing to the conventional one, on the contrary the structure with p-doping in all but the bottom barriers has a much better optical and electrical properties due to enhancement of the holes' injection and the electrons' confinement. The efficiency droop is significantly alleviated and the light output power is greatly enhanced. To avoid forming a PN junction by the bottom barrier and the n-AlGaN in the proposed structure, therefore, the bottom barrier isn't p-doped. Then structures with different hole densities in the Mg-doped barriers have been studied numerically and that confirmed the best.

  12. Ocean barrier layers' effect on tropical cyclone intensification.

    PubMed

    Balaguru, Karthik; Chang, Ping; Saravanan, R; Leung, L Ruby; Xu, Zhao; Li, Mingkui; Hsieh, Jen-Shan

    2012-09-04

    Improving a tropical cyclone's forecast and mitigating its destructive potential requires knowledge of various environmental factors that influence the cyclone's path and intensity. Herein, using a combination of observations and model simulations, we systematically demonstrate that tropical cyclone intensification is significantly affected by salinity-induced barrier layers, which are "quasi-permanent" features in the upper tropical oceans. When tropical cyclones pass over regions with barrier layers, the increased stratification and stability within the layer reduce storm-induced vertical mixing and sea surface temperature cooling. This causes an increase in enthalpy flux from the ocean to the atmosphere and, consequently, an intensification of tropical cyclones. On average, the tropical cyclone intensification rate is nearly 50% higher over regions with barrier layers, compared to regions without. Our finding, which underscores the importance of observing not only the upper-ocean thermal structure but also the salinity structure in deep tropical barrier layer regions, may be a key to more skillful predictions of tropical cyclone intensities through improved ocean state estimates and simulations of barrier layer processes. As the hydrological cycle responds to global warming, any associated changes in the barrier layer distribution must be considered in projecting future tropical cyclone activity.

  13. Silicon based substrate with calcium aluminosilicate/thermal barrier layer

    NASA Technical Reports Server (NTRS)

    Eaton, Jr., Harry Edwin (Inventor); Allen, William Patrick (Inventor); Miller, Robert Alden (Inventor); Jacobson, Nathan S. (Inventor); Smialek, James L. (Inventor); Opila, Elizabeth J. (Inventor); Lee, Kang N. (Inventor); Nagaraj, Bangalore A. (Inventor); Wang, Hongyu (Inventor); Meschter, Peter Joel (Inventor)

    2001-01-01

    A barrier layer for a silicon containing substrate which inhibits the formation of gaseous species of silicon when exposed to a high temperature aqueous environment comprises a calcium alumino silicate.

  14. Silicon based substrate with environmental/ thermal barrier layer

    NASA Technical Reports Server (NTRS)

    Eaton, Jr., Harry Edwin (Inventor); Allen, William Patrick (Inventor); Jacobson, Nathan S. (Inventor); Bansal, Nanottam P. (Inventor); Opila, Elizabeth J. (Inventor); Smialek, James L. (Inventor); Lee, Kang N. (Inventor); Spitsberg, Irene T. (Inventor); Wang, Hongyu (Inventor); Meschter, Peter Joel (Inventor)

    2002-01-01

    A barrier layer for a silicon containing substrate which inhibits the formation of gaseous species of silicon when exposed to a high temperature aqueous environment comprises a barium-strontium alumino silicate.

  15. Statistical nanoscale study of localised radiative transitions in GaN/AlGaN quantum wells and AlGaN epitaxial layers

    NASA Astrophysics Data System (ADS)

    Rigutti, L.; Mancini, L.; Lefebvre, W.; Houard, J.; Hernàndez-Maldonado, D.; Di Russo, E.; Giraud, E.; Butté, R.; Carlin, J.-F.; Grandjean, N.; Blavette, D.; Vurpillot, F.

    2016-09-01

    Compositional disorder has important consequences on the optical properties of III-nitride ternary alloys. In AlGaN epilayers and AlGaN-based quantum heterostructures, the potential fluctuations induced by such disorder lead to the localisation of carriers at low temperature, which affects their transition energies. Using the correlations between micro-photoluminescence, scanning transmission electron microscopy and atom probe tomography we have analysed the optical behaviour of Al0.25Ga0.75N epilayers and that of GaN/AlGaN quantum wells, and reconstructed in three dimensions the distribution of chemical species with sub-nanometre spatial resolution. These composition maps served as the basis for the effective mass calculation of electrons and holes involved in radiative transitions. Good statistical predictions were subsequently obtained for the above-mentioned transition and localisation energies by establishing a link with their microstructural properties.

  16. Inductively coupled BCl3/Cl2 /Ar plasma etching of Al-rich AlGaN

    SciTech Connect

    Douglas, Erica A.; Sanchez, Carlos A.; Kaplar, Robert J.; Allerman, Andrew A.; Baca, Albert G.

    2016-12-01

    Varying atomic ratios in compound semiconductors is well known to have large effects on the etching properties of the material. The use of thin device barrier layers, down to 25 nm, adds to the fabrication complexity by requiring precise control over etch rates and surface morphology. The effects of bias power and gas ratio of BCl3 to Cl2 for inductively coupled plasma etching of high Al content AlGaN were contrasted with AlN in this study for etch rate, selectivity, and surface morphology. Etch rates were greatly affected by both bias power and gas chemistry. Here we detail the effects of small variations in Al composition for AlGaN and show substantial changes in etch rate with regards to bias power as compared to AlN.

  17. Performance enhancement of blue light-emitting diodes without an electron-blocking layer by using special designed p-type doped InGaN barriers.

    PubMed

    Zhang, Yun-Yan; Fan, Guang-Han; Yin, Yi-An; Yao, Guang-Rui

    2012-01-02

    In this study, the characteristics of the nitride-based blue light-emitting diode (LED) without an electron-blocking layer (EBL) are analyzed numerically. The emission spectra, carrier concentrations in the quantum wells (QWs), energy band diagrams, electrostatic fields, and internal quantum efficiency (IQE) are investigated. The simulation results indicate that the LED without an EBL has a better hole-injection efficiency and smaller electrostatic fields in its active region over the conventional LED with an AlGaN EBL. The simulation results also show that the LED without an EBL has severe efficiency droop. However, when the special designed p-type doped InGaN QW barriers are used, the efficiency droop is markedly improved and the electroluminescence (EL) emission intensity is greatly enhanced which is due to the improvement of the hole uniformity in the active region and small electron leakage.

  18. Influence of AlN thickness on AlGaN epilayer grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Jayasakthi, M.; Juillaguet, S.; Peyre, H.; Konczewicz, L.; Baskar, K.; Contreras, S.

    2016-10-01

    AlGaN/AlN layers were grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. The AlN buffer thickness was varied from 400 nm to 800 nm. The AlGaN layer thickness was 1000 nm. The crystalline quality, thickness and composition of AlGaN were determined using high resolution X-ray diffraction (HRXRD). The threading dislocation density (TDD) was found to decrease with increase of AlN layer thickness. Reciprocal space mapping (RSM) was used to estimate the strain and relaxation between AlGaN and AlN. The optical properties of AlGaN layers were investigated by temperature dependent photoluminescence (PL). PL intensities of AlGaN layers increases with increasing the AlN thickness. The surface morphology of AlGaN was studied by atomic force microscopy (AFM). Root mean square (RMS) roughness values were found to be decreased while increase of AlN thickness.

  19. Monitoring and Controlling of Strain During MOCVD of AlGaN for UV Optoelectronics

    SciTech Connect

    Han, J.; Crawford, M.H.; Shul, R.J.; Hearne, S.J.; Chason, E.; Figiel, J.J.; Banas, M.

    1999-01-14

    The grown-in tensile strain, due to a lattice mismatch between AlGaN and GaN, is responsible for the observed cracking that seriously limits the feasibility of nitride-based ultraviolet (UV) emitters. We report in-situ monitoring of strain/stress during MOCVD of AlGaN based on a wafer-curvature measurement technique. The strain/stress measurement confirms the presence of tensile strain during growth of AlGaN pseudomorphically on a thick GaN layer. Further growth leads to the onset of stress relief through crack generation. We find that the growth of AlGaN directly on low-temperature (LT) GaN or AlN buffer layers results in a reduced and possibly controllable strain.

  20. Two-layer thermal barrier coating for high temperature components

    NASA Technical Reports Server (NTRS)

    Stecura, S.

    1977-01-01

    A simple two-layer plasma-sprayed thermal barrier coating system was developed which has the potential for protecting high temperature air-cooled gas turbine components. Of the initially examined coatings, the most promising system is an Ni-16Cr-6Al-0.6Y (in wt%) bond coating (about 0.005 to 0.010 cm thick) and a ZrO2-12Y2O3 (in wt%) thermal barrier coating (about 0.025 to 0.064 cm thick). This thermal barrier substantially lowered the metal temperature of the air-cooled airfoil. The coating withstood 3200 cycles (80 s at 1280 C surface temperature) and 275 cycles (1 hr at 1490 C surface temperature) without cracking or spalling. No separation of the thermal barrier from the bond coating or the bond coating from the substrate was observed.

  1. Super Gas Barrier Thin Films via Layer-by-Layer Assembly of Polyelectrolytes and Clay

    NASA Astrophysics Data System (ADS)

    Priolo, Morgan; Gamboa, Daniel; Grunlan, Jaime

    2010-03-01

    Thin composite films of branched polyethylenimine (PEI), polyacrylic acid (PAA) and sodium montmorillonite clay (MMT) platelets were prepared using layer-by-layer assembly. Film thickness, mass deposited per layer, and barrier were shown to increase exponentially with the number of deposition cycles. After 32 layers (i.e., eight PEI/PAA/PEI/MMT quadlayers) are deposited, the resulting transparent film exhibits an oxygen transmission rate below the detection limit of commercial instrumentation (< 0.005 cm^3/m^2 . day). This level of oxygen barrier is believed to be due to a nano-brick wall microstructure comprised of exfoliated clay bricks in polymeric mortar, where the enhanced spacing between MMT layers, provided by PEI and PAA, creates channels perpendicular concentration gradient that delay the permeating molecule. These films are good candidates for flexible electronics, food, and pharmaceutical packaging due to their transparency, super gas barrier (that rivals SiOx) and lack of metal.

  2. Effects of surface barrier layer in AlGaAs/GaAs solar cells

    NASA Astrophysics Data System (ADS)

    Urabe, Hiroyuki; Kuramoto, Makoto; Nakano, Tomohiro; Kawaharazuka, Atsushi; Makimoto, Toshiki; Horikoshi, Yoshiji

    2015-09-01

    In this paper, we report the effects of surface barrier layers on the characteristics of AlGaAs/GaAs solar cells. The external quantum efficiency (EQE) spectra for AlGaAs barrier samples with different barrier layer AlAs fractions and thickness of the surface barrier layer were measured to increase the solar cell efficiency. The results show that the surface barrier layer is effective to block diffusing photoexcited electrons to the surface while the thicker barrier layer absorbs higher energy photons to generate carriers which recombine at the surface. The optimal surface barrier structure is a 50 nm thick Al0.7Ga0.3As.

  3. Effects of plasma spray parameters on two layer thermal barrier

    NASA Technical Reports Server (NTRS)

    Stecura, S.

    1981-01-01

    The power level and the type of arc gas used during plasma spraying of a two layer thermal barrier system (TBS) were found to affect the life of the system. Life at 1095 C in a cyclic furnace test was improved by about 140 percent by increasing the power during plasma spray applications of the bond and thermal barrier coatings. This improvement is due to increases in the densities of the bond and thermal barrier coatings by 3 and 5 percent, respectively. These increases in densities are equivalent to about 45 and 30 percent reduction in mean porosities, respectively. The addition of hydrogen to the argon arc gas had the same effect as the reduction in power level and caused a reduction in TBS life.

  4. Multilayer barrier films comprising nitrogen spacers between free-standing barrier layers

    NASA Astrophysics Data System (ADS)

    Granstrom, Jimmy Erik

    The air sensitivity of organic electronic devices has delayed the broad commercialization of the printed "plastics" electronics technology. The vacuum deposition methods used to fabricate multi-layers which fulfill the encapsulation requirements for plastic electronic devices are complex and expensive. Fully printed "plastic" electronics requires the development of encapsulation architectures which comprise solution deposited barriers and/or low-cost free-standing barrier films based on polymers, e.g. poly ethylene terephthalate (PET). One way to reach this goal is the insertion of contaminant-free (e.g. pure N2) gas-phase spacers between free-standing barrier films in a multilayer structure. The spacers themselves do not exhibit any barrier properties (diffusion of gas permeants in a gas phase is orders of magnitude faster than in a solid), but they delay the attainment of steady state. The spacer also reduces the chemical potential gradient across downstream barrier layers during the transient regime, reducing permeation rate to the device. Furthermore, if sorption is not fully equilibrated and introduces a kinetic barrier to transport, the additional sorption and desorption steps needed for permeant to reach the device may also slow the steady-state permeation rate. Encapsulation architectures utilizing both single-matrix (without nitrogen spacers) and multiple-matrix structures (with nitrogen spacers) were fabricated in this study, including Russian Doll structures utilizing pairs of free-standing barrier films and epoxy seals separated by nitrogen spacers. This structure enables the use of low-cost epoxy to attach two or more free-standing barrier films to a substrate with improved barrier performance. The performance of various Russian Doll encapsulations was evaluated with the calcium thin film optical transmission test, showing improved performance of the Russian doll configuration relative to a non-nested barrier/spacer architecture, and demonstrating that

  5. Electrical properties of n-type AlGaN with high Si concentration

    NASA Astrophysics Data System (ADS)

    Takeda, Kunihiro; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu

    2016-05-01

    The electrical properties of Si-doped AlGaN layers (AlN molar fractions: 0.03-0.06) with the donor concentrations (N D) from 8.8 × 1017 to 4.5 × 1020 cm-3 were investigated by variable-temperature Hall effect measurement using the van der Pauw method. A minimum resistivity of 3.6 × 10-4 Ω cm was obtained for Si-doped AlGaN with a smooth surface at room temperature. We found that the activation energy of the Si donor is affected by the Coulomb interaction in the AlGaN layer with N D values from 8.8 × 1017 to 2.5 × 1020 cm-3. In several AlGaN layers, the free-electron concentration did not vary with sample temperature, as expected in the case of degeneracy. The localization of GaN in the AlGaN layer was speculated as a cause of degeneracy of samples.

  6. Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers

    PubMed Central

    Nguyen, Hieu Pham Trung; Djavid, Mehrdad; Woo, Steffi Y.; Liu, Xianhe; Connie, Ashfiqua T.; Sadaf, Sharif; Wang, Qi; Botton, Gianluigi A.; Shih, Ishiang; Mi, Zetian

    2015-01-01

    We report on the demonstration of a new type of axial nanowire LED heterostructures, with the use of self-organized InGaN/AlGaN dot-in-a-wire core-shell nanowire arrays. The large bandgap AlGaN shell is spontaneously formed on the sidewall of the nanowire during the growth of AlGaN barrier of the quantum dot active region. As such, nonradiative surface recombination, that dominates the carrier dynamics of conventional axial nanowire LED structures, can be largely eliminated, leading to significantly increased carrier lifetime from ~0.3 ns to 4.5 ns. The luminescence emission is also enhanced by orders of magnitude. Moreover, the p-doped AlGaN barrier layers can function as distributed electron blocking layers (EBLs), which is found to be more effective in reducing electron overflow, compared to the conventional AlGaN EBL. The device displays strong white-light emission, with a color rendering index of ~95. An output power of >5 mW is measured for a 1 mm × 1 mm device, which is more than 500 times stronger than the conventional InGaN axial nanowire LEDs without AlGaN distributed EBLs. PMID:25592057

  7. Engineering the carrier dynamics of InGaN nanowire white light-emitting diodes by distributed p-AlGaN electron blocking layers.

    PubMed

    Nguyen, Hieu Pham Trung; Djavid, Mehrdad; Woo, Steffi Y; Liu, Xianhe; Connie, Ashfiqua T; Sadaf, Sharif; Wang, Qi; Botton, Gianluigi A; Shih, Ishiang; Mi, Zetian

    2015-01-16

    We report on the demonstration of a new type of axial nanowire LED heterostructures, with the use of self-organized InGaN/AlGaN dot-in-a-wire core-shell nanowire arrays. The large bandgap AlGaN shell is spontaneously formed on the sidewall of the nanowire during the growth of AlGaN barrier of the quantum dot active region. As such, nonradiative surface recombination, that dominates the carrier dynamics of conventional axial nanowire LED structures, can be largely eliminated, leading to significantly increased carrier lifetime from ~0.3 ns to 4.5 ns. The luminescence emission is also enhanced by orders of magnitude. Moreover, the p-doped AlGaN barrier layers can function as distributed electron blocking layers (EBLs), which is found to be more effective in reducing electron overflow, compared to the conventional AlGaN EBL. The device displays strong white-light emission, with a color rendering index of ~95. An output power of >5 mW is measured for a 1 mm × 1 mm device, which is more than 500 times stronger than the conventional InGaN axial nanowire LEDs without AlGaN distributed EBLs.

  8. Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers

    NASA Astrophysics Data System (ADS)

    Nguyen, Hieu Pham Trung; Djavid, Mehrdad; Woo, Steffi Y.; Liu, Xianhe; Connie, Ashfiqua T.; Sadaf, Sharif; Wang, Qi; Botton, Gianluigi A.; Shih, Ishiang; Mi, Zetian

    2015-01-01

    We report on the demonstration of a new type of axial nanowire LED heterostructures, with the use of self-organized InGaN/AlGaN dot-in-a-wire core-shell nanowire arrays. The large bandgap AlGaN shell is spontaneously formed on the sidewall of the nanowire during the growth of AlGaN barrier of the quantum dot active region. As such, nonradiative surface recombination, that dominates the carrier dynamics of conventional axial nanowire LED structures, can be largely eliminated, leading to significantly increased carrier lifetime from ~0.3 ns to 4.5 ns. The luminescence emission is also enhanced by orders of magnitude. Moreover, the p-doped AlGaN barrier layers can function as distributed electron blocking layers (EBLs), which is found to be more effective in reducing electron overflow, compared to the conventional AlGaN EBL. The device displays strong white-light emission, with a color rendering index of ~95. An output power of >5 mW is measured for a 1 mm × 1 mm device, which is more than 500 times stronger than the conventional InGaN axial nanowire LEDs without AlGaN distributed EBLs.

  9. Piezoelectric domains in the AlGaN hexagonal microrods: Effect of crystal orientations

    NASA Astrophysics Data System (ADS)

    Sivadasan, A. K.; Mangamma, G.; Bera, Santanu; Kamruddin, M.; Dhara, Sandip

    2016-05-01

    Presently, the piezoelectric materials are finding tremendous applications in the micro-mechanical actuators, sensors, and self-powered devices. In this context, the studies pertaining to piezoelectric properties of materials in the different size ranges are very important for the scientific community. The III-nitrides are exceptionally important, not only for optoelectronic but also for their piezoelectric applications. In the present study, we synthesized AlGaN via self-catalytic vapor-solid mechanism by atmospheric pressure chemical vapor deposition technique on AlN base layer over intrinsic Si(100) substrate. The growth process is substantiated using X-ray diffraction and X-ray photoelectron spectroscopy. The Raman and photoluminescence studies reveal the formation of AlGaN microrods in the wurtzite phase and ensure the high optical quality of the crystalline material. The single crystalline, direct wide band gap and hexagonally shaped AlGaN microrods are studied for understanding the behavior of the crystallites under the application of constant external electric field using the piezoresponse force microscopy. The present study is mainly focused on understanding the behavior of induced polarization for the determination of piezoelectric coefficient of AlGaN microrod along the c-axis and imaging of piezoelectric domains in the sample originating because of the angular inclination of AlGaN microrods with respect to its AlN base layers.

  10. The stratum corneum comprises three layers with distinct metal-ion barrier properties

    PubMed Central

    Kubo, Akiharu; Ishizaki, Itsuko; Kubo, Akiko; Kawasaki, Hiroshi; Nagao, Keisuke; Ohashi, Yoshiharu; Amagai, Masayuki

    2013-01-01

    The stratum corneum (SC), the outermost barrier of mammalian bodies, consists of layers of cornified keratinocytes with intercellular spaces sealed with lipids. The insolubility of the SC has hampered in-depth analysis, and the SC has been considered a homogeneous barrier. Here, we applied time-of-flight secondary ion mass spectrometry to demonstrate that the SC consists of three layers with distinct properties. Arginine, a major component of filaggrin-derived natural moisturizing factors, was concentrated in the middle layer, suggesting that this layer functions in skin hydration. Topical application of metal ions revealed that the outer layer allowed their passive influx and efflux, while the middle and lower layers exhibited distinct barrier properties, depending on the metal tested. Notably, filaggrin deficiency abrogated the lower layer barrier, allowing specific metal ions to permeate viable layers. These findings elucidate the multi-layered barrier function of the SC and its defects in filaggrin-deficient atopic disease patients. PMID:23615774

  11. High efficiency improvements in AlGaN-based ultraviolet light-emitting diodes with specially designed AlGaN superlattice hole and electron blocking layers

    NASA Astrophysics Data System (ADS)

    Yi, Xinyan; Sun, Huiqing; Sun, Jie; Yang, Xian; Fan, Xuancong; Zhang, Zhuding; Guo, Zhiyou

    2017-04-01

    AlxGa1-xN/Al0.6Ga0.4N graded superlattice hole blocking layers (GSL-HBLs) and AlxGa1-xN/Al0.6Ga0.4N graded superlattice electron blocking layers (GSL-EBLs) are applied to the traditional AlGaN-based ultraviolet light-emitting diodes (UVLEDs). This can obtain much higher internal quantum efficiency (IQE) and output power. In order to reveal the underlying physical mechanism of this unique structure, we have studied it numerically by APSYS simulation programs. We find that GSL-EBLs can obviously increase the electron potential height and reduce the hole potential height, produce less electron leakage and more hole injection, leading to higher carrier contration. GSL-HBLs can obviously reduce the hole leakage, reduce the thermal velocity and correspondingly the mean free path of the hot electrons, and increase the electron injection. This enhanced the electron capture efficiency of the multiple quantum wells, which can also help to reduce electron leakage.

  12. Formation Mechanism of Barrier Layer in the Subtropical Pacific

    NASA Astrophysics Data System (ADS)

    Katsura, S.; Oka, E.; Sato, K.

    2014-12-01

    Formation mechanism of barrier layers (BLs) in the subtropical Pacific was investigated by using Argo profiling float data and shipboard hydrographic section data. In this region, BLs were formed mainly in winter in association with the sea surface salinity (SSS) front, which was located on the equator side of the SSS maximum region. While BLs from gridded Argo data were broadly distributed, their distribution from raw Argo profiles was patchy and their temporal scale was shorter than 10 days. Formation mechanism of BLs was attributed to two processes: freshening near the sea surface and salinification in the subsurface. As for the former process, poleward Ekman advection of fresher water from the tropics across the SSS front was dominant, while the effect of precipitation was small. As for the latter process, inflow of high salinity water into mixed layers associated with the SSS front can contribute to the BL formation, but actually the core of subducted Tropical Water was too deep to affect salinity structure in the mixed layers across the seasonal thermocline. These features strongly suggest that tilting of the SSS front is essentially important for the BL formation in the subtropical Pacific. This tilting process can only occur where the contribution of horizontal SSS gradient to the horizontal density gradient is strong, and explains why spatial distribution of BLs corresponded to the SSS front. Seasonal variation of BLs corresponded well to that of mixed layer depth, indicating that the deeper mixed layers are before the BL formation, the thicker BLs are formed when the SSS front is tilted.

  13. Wafer-scale crack-free AlGaN on GaN through two-step selective-area growth for optically pumped stimulated emission

    NASA Astrophysics Data System (ADS)

    Ko, Young-Ho; Bae, Sung-Bum; Kim, Sung-Bock; Kim, Dong Churl; Leem, Young Ahn; Cho, Yong-Hoon; Nam, Eun-Soo

    2016-07-01

    Crack-free AlGaN template has been successfully grown over entire 2-in. wafer by using 2-step selective-area growth (SAG). The GaN truncated structure was obtained by vertical growth mode with low growth temperature. AlGaN of second step was grown under lateral growth mode. Low pressure enhanced the relative ratio of lateral to vertical growth rate as well as absolute overall growth rate. High V/III ratio was favorable for lateral growth mode. Crack-free planar AlGaN was obtained under low pressure of 30 Torr and high V/III ratio of 4400. The AlGaN was crack-free over entire 2-in. wafer and had quite uniform Al-mole fraction. The dislocation density of the AlGaN with 20% Al-composition was as low as ~7.6×108 /cm2, measured by cathodoluminescence. GaN/AlGaN multi-quantum well (MQW) with cladding and waveguide layers were grown on the crack-free AlGaN template with low dislocation density. It was confirmed that the MQW on the AlGaN template emitted the stimulated emission at 355.5 nm through optical pumping experiment. The AlGaN obtained by 2-step SAG would provide high crystal quality for highly-efficient optoelectronic devices as well as the ultraviolet laser diode.

  14. Comparative study of NH 4OH and HCl etching behaviours on AlGaN surfaces

    NASA Astrophysics Data System (ADS)

    Sohal, Rakesh; Dudek, Piotr; Hilt, Oliver

    2010-01-01

    A controlled AlGaN surface preparation method avails to improve the performance of GaN-based HEMT devices. A comparative investigation of chemical treatments by (1:10) NH 4OH:H 2O and (1:10) HCl:H 2O solutions for AlGaN surface preparation by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) is reported. The XPS data clearly reveal that the native oxide on AlGaN was composed of Al 2O 3, Ga 2O 3 and NO compounds. These compounds were etched off partially or completely by both the chemical treatments, namely NH 4OH or HCl solutions, independently. The HCl treatment etches out Al 2O 3 completely from native oxide unlike NH 4OH treatment. The HCl treatment results in larger amount of carbon segregation on AlGaN surfaces, however it removes all oxides' compounds faster than NH 4OH treatment. The AFM results reveal the improvement of surface morphology by both the chemical treatments leading to the surface roughness RMS values of 0.24 nm and 0.21 nm for NH 4OH and HCl treated AlGaN layers, respectively.

  15. Role of barrier layer on dielectric function of graphene double layer system at finite temperature

    NASA Astrophysics Data System (ADS)

    Patel, Digish K.; Ambavale, Sagar K.; Prajapati, Ketan; Sharma, A. C.

    2016-05-01

    We have theoretically investigated the static dielectric function of graphene double layer system (GDLS) at finite temperatures within the random phase approximation. GDLS has been suspended on a substrate and barrier layer of three different materials; h-BN, Al2O3 and HfO2 has been introduced between two graphene sheets of GDLS. We have reported dependence of the overall dielectric function of GDLS on interlayer distance and the effect of the dielectric environment at finite temperatures. Results show close relation between changing environment and behavior of dielectric constant of GDLS.

  16. AlGaN channel field effect transistors with graded heterostructure ohmic contacts

    NASA Astrophysics Data System (ADS)

    Bajaj, Sanyam; Akyol, Fatih; Krishnamoorthy, Sriram; Zhang, Yuewei; Rajan, Siddharth

    2016-09-01

    We report on ultra-wide bandgap (UWBG) Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistors (MISFETs) with heterostructure engineered low-resistance ohmic contacts. The low intrinsic electron affinity of AlN (0.6 eV) leads to large Schottky barriers at the metal-AlGaN interface, resulting in highly resistive ohmic contacts. In this work, we use a reverse compositional graded n++ AlGaN contact layer to achieve upward electron affinity grading, leading to a low specific contact resistance (ρsp) of 1.9 × 10-6 Ω cm2 to n-Al0.75Ga0.25N channels (bandgap ˜5.3 eV) with non-alloyed contacts. We also demonstrate UWBG Al0.75Ga0.25N channel MISFET device operation employing the compositional graded n++ ohmic contact layer and 20 nm atomic layer deposited Al2O3 as the gate-dielectric.

  17. Barrier layer for a MCrAlY basecoat superalloy combination

    DOEpatents

    Sabol, Stephen M.; Goedjen, John G.; Vance, Steven J.

    2001-01-01

    A turbine component contains a substrate (22) such as a superalloy, a basecoat (24) of the type MCrAlY, and a continuous barrier layer (28) between the substrate and basecoat, where the barrier layer (28) is made of an alloy of (Re, Ta, Ru, Os)X, where X can be Ni, Co or their mixture, where the barrier layer is at least 2 micrometers thick and substantially prevents materials from both the basecoat and substrate from migrating through it.

  18. Effect of an Opaque Reflecting Layer on the Thermal Behavior of a Thermal Barrier Coating

    NASA Technical Reports Server (NTRS)

    Spuckler, Charles M.

    2007-01-01

    A parametric study using a two-flux approximation of the radiative transfer equation was performed to examine the effects of an opaque reflective layer on the thermal behavior of a typical semitransparent thermal barrier coating on an opaque substrate. Some ceramic materials are semitransparent in the wavelength ranges where thermal radiation is important. Even with an opaque layer on each side of the semitransparent thermal barrier coating, scattering and absorption can have an effect on the heat transfer. In this work, a thermal barrier coating that is semitransparent up to a wavelength of 5 micrometers is considered. Above 5 micrometers wavelength, the thermal barrier coating is opaque. The absorption and scattering coefficient of the thermal barrier was varied. The thermal behavior of the thermal barrier coating with an opaque reflective layer is compared to a thermal barrier coating without the reflective layer. For a thicker thermal barrier coating with lower convective loading, which would be typical of a combustor liner, a reflective layer can significantly decrease the temperature in the thermal barrier coating and substrate if the scattering is weak or moderate and for strong scattering if the absorption is large. The layer without the reflective coating can be about as effective as the layer with the reflective coating if the absorption is small and the scattering strong. For low absorption, some temperatures in the thermal barrier coating system can be slightly higher with the reflective layer. For a thin thermal barrier coating with high convective loading, which would be typical of a blade or vane that sees the hot sections of the combustor, the reflective layer is not as effective. The reflective layer reduces the surface temperature of the reflective layer for all conditions considered. For weak and moderate scattering, the temperature of the TBC-substrate interface is reduced but for strong scattering, the temperature of the substrate is increased

  19. Tunable staged release of therapeutics from layer-by-layer coatings with clay interlayer barrier.

    PubMed

    Min, Jouha; Braatz, Richard D; Hammond, Paula T

    2014-03-01

    In developing new generations of coatings for medical devices and tissue engineering scaffolds, there is a need for thin coatings that provide controlled sequential release of multiple therapeutics while providing a tunable approach to time dependence and the potential for sequential or staged release. Herein, we demonstrate the ability to develop a self-assembled, polymer-based conformal coating, built by using a water-based layer-by-layer (LbL) approach, as a dual-purpose biomimetic implant surface that provides staggered and/or sustained release of an antibiotic followed by active growth factor for orthopedic implant applications. This multilayered coating consists of two parts: a base osteoinductive component containing bone morphogenetic protein-2 (rhBMP-2) beneath an antibacterial component containing gentamicin (GS). For the fabrication of truly stratified composite films with the customized release behavior, we present a new strategy-implementation of laponite clay barriers-that allows for a physical separation of the two components by controlling interlayer diffusion. The clay barriers in a single-component GS system effectively block diffusion-based release, leading to approximately 50% reduction in bolus doses and 10-fold increase in the release timescale. In a dual-therapeutic composite coating, the top GS component itself was found to be an effective physical barrier for the underlying rhBMP-2, leading to an order of magnitude increase in the release timescale compared to the single-component rhBMP-2 system. The introduction of a laponite interlayer barrier further enhanced the temporal separation between release of the two drugs, resulting in a more physiologically appropriate dosing of rhBMP-2. Both therapeutics released from the composite coating retained their efficacy over their established release timeframes. This new platform for multi-drug localized delivery can be easily fabricated, tuned, and translated to a variety of implant applications

  20. Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers.

    PubMed

    Andringa, Anne-Marije; Perrotta, Alberto; de Peuter, Koen; Knoops, Harm C M; Kessels, Wilhelmus M M; Creatore, Mariadriana

    2015-10-14

    Encapsulation of organic (opto-)electronic devices, such as organic light-emitting diodes (OLEDs), photovoltaic cells, and field-effect transistors, is required to minimize device degradation induced by moisture and oxygen ingress. SiNx moisture permeation barriers have been fabricated using a very recently developed low-temperature plasma-assisted atomic layer deposition (ALD) approach, consisting of half-reactions of the substrate with the precursor SiH2(NH(t)Bu)2 and with N2-fed plasma. The deposited films have been characterized in terms of their refractive index and chemical composition by spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS), and Fourier-transform infrared spectroscopy (FTIR). The SiNx thin-film refractive index ranges from 1.80 to 1.90 for films deposited at 80 °C up to 200 °C, respectively, and the C, O, and H impurity levels decrease when the deposition temperature increases. The relative open porosity content of the layers has been studied by means of multisolvent ellipsometric porosimetry (EP), adopting three solvents with different kinetic diameters: water (∼0.3 nm), ethanol (∼0.4 nm), and toluene (∼0.6 nm). Irrespective of the deposition temperature, and hence the impurity content in the SiNx films, no uptake of any adsorptive has been observed, pointing to the absence of open pores larger than 0.3 nm in diameter. Instead, multilayer development has been observed, leading to type II isotherms that, according to the IUPAC classification, are characteristic of nonporous layers. The calcium test has been performed in a climate chamber at 20 °C and 50% relative humidity to determine the intrinsic water vapor transmission rate (WVTR) of SiNx barriers deposited at 120 °C. Intrinsic WVTR values in the range of 10(-6) g/m2/day indicate excellent barrier properties for ALD SiNx layers as thin as 10 nm, competing with that of state-of-the-art plasma-enhanced chemical vapor-deposited SiNx layers of a few hundred

  1. Recent Advances in Gas Barrier Thin Films via Layer-by-Layer Assembly of Polymers and Platelets.

    PubMed

    Priolo, Morgan A; Holder, Kevin M; Guin, Tyler; Grunlan, Jaime C

    2015-05-01

    Layer-by-layer (LbL) assembly has emerged as the leading non-vacuum technology for the fabrication of transparent, super gas barrier films. The super gas barrier performance of LbL deposited films has been demonstrated in numerous studies, with a variety of polyelectrolytes, to rival that of metal and metal oxide-based barrier films. This Feature Article is a mini-review of LbL-based multilayer thin films with a 'nanobrick wall' microstructure comprising polymeric mortar and nano-platelet bricks that impart high gas barrier to otherwise permeable polymer substrates. These transparent, water-based thin films exhibit oxygen transmission rates below 5 × 10(-3) cm(3) m(-2) day(-1) atm(-1) and lower permeability than any other barrier material reported. In an effort to put this technology in the proper context, incumbent technologies such as metallized plastics, metal oxides, and flake-filled polymers are briefly reviewed.

  2. Low resistance barrier layer for isolating, adhering, and passivating copper metal in semiconductor fabrication

    DOEpatents

    Weihs, Timothy P.; Barbee, Jr., Troy W.

    2002-01-01

    Cubic or metastable cubic refractory metal carbides act as barrier layers to isolate, adhere, and passivate copper in semiconductor fabrication. One or more barrier layers of the metal carbide are deposited in conjunction with copper metallizations to form a multilayer characterized by a cubic crystal structure with a strong (100) texture. Suitable barrier layer materials include refractory transition metal carbides such as vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (Cr.sub.3 C.sub.2), tungsten carbide (WC), and molybdenum carbide (MoC).

  3. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer

    DOEpatents

    Chavarkar, Prashant; Smorchkova, Ioulia P.; Keller, Stacia; Mishra, Umesh; Walukiewicz, Wladyslaw; Wu, Yifeng

    2005-02-01

    A Group III nitride based high electron mobility transistors (HEMT) is disclosed that provides improved high frequency performance. One embodiment of the HEMT comprises a GaN buffer layer, with an Al.sub.y Ga.sub.1-y N (y=1 or y 1) layer on the GaN buffer layer. An Al.sub.x Ga.sub.1-x N (0.ltoreq.x.ltoreq.0.5) barrier layer on to the Al.sub.y Ga.sub.1-y N layer, opposite the GaN buffer layer, Al.sub.y Ga.sub.1-y N layer having a higher Al concentration than that of the Al.sub.x Ga.sub.1-x N barrier layer. A preferred Al.sub.y Ga.sub.1-y N layer has y=1 or y.about.1 and a preferred Al.sub.x Ga.sub.1-x N barrier layer has 0.ltoreq.x.ltoreq.0.5. A 2DEG forms at the interface between the GaN buffer layer and the Al.sub.y Ga.sub.1-y N layer. Respective source, drain and gate contacts are formed on the Al.sub.x Ga.sub.1-x N barrier layer. The HEMT can also comprising a substrate adjacent to the buffer layer, opposite the Al.sub.y Ga.sub.1-y N layer and a nucleation layer between the Al.sub.x Ga.sub.1-x N buffer layer and the substrate.

  4. Semiconductor lasers with asymmetric barrier layers: An approach to high temperature stability

    SciTech Connect

    Zhukov, A. E.; Kryzhanovskaya, N. V. Maximov, M. V.; Egorov, A. Yu.; Pavlov, M. M.; Zubov, F. I.; Asryan, L. V.

    2011-04-15

    A method for enhancing the temperature stability of injection lasers that is based on introducing asymmetric barrier layers on each side of the quantum-confined active region is suggested. The asymmetric barrier layers prevent electrons from escaping from the active region into the part of the waveguide region where holes are injected and prevent holes from escaping into the part of the waveguide region where electrons are injected. Parameters of the layers that allow implementation of the asymmetric-barrier design using pseudomorphic structures grown on GaAs substrates are determined. The calculation of the threshold characteristics of these laser structures demonstrates that suppression of electron-hole recombination outside the active region attained due to the use of asymmetric barrier layers leads to a significant decrease in the threshold current and an increase in the characteristic temperature of this type of lasers.

  5. Silicon based substrate with calcium aluminosilicate environmental/thermal barrier layer

    NASA Technical Reports Server (NTRS)

    Eaton, Jr., Harry Edwin (Inventor); Allen, William Patrick (Inventor); Miller, Robert Alden (Inventor); Jacobson, Nathan S. (Inventor); Smialek, James L. (Inventor); Opila, Elizabeth J. (Inventor); Lee, Kang N. (Inventor); Nagaraj, Bangalore A. (Inventor); Wang, Hongyu (Inventor); Meschter, Peter Joel (Inventor)

    2001-01-01

    A barrier layer for a silicon containing substrate which inhibits the formation of gaseous species of silicon when exposed to a high temperature aqueous environment comprises a calcium alumino silicate.

  6. Preparation and characterization of TiO2 barrier layers for dye-sensitized solar cells.

    PubMed

    Zheng, Yichen; Klankowski, Steven; Yang, Yiqun; Li, Jun

    2014-07-09

    A TiO2 barrier layer is critical in enhancing the performance of dye-sensitized solar cells (DSSCs). Two methods to prepare the TiO2 barrier layer on fluorine-doped tin dioxide (FTO) surface were systematically studied in order to minimize electron-hole recombination and electron backflow during photovoltaic processes of DSSCs. The film structure and materials properties were correlated with the photovoltaic characteristics and electrochemical properties. In the first approach, a porous TiO2 layer was deposited by wet chemical treatment of the sample with TiCl4 solution for time periods varying from 0 to 60 min. The N719 dye molecules were found to be able to insert into the porous barrier layers. The 20 min treatment formed a nonuniform but intact TiO2 layer of ∼100-300 nm in thickness, which gave the highest open-circuit voltage VOC, short-circuit photocurrent density JSC, and energy conversion efficiency. But thicker TiO2 barrier layers by this method caused a decrease in JSC, possibly limited by lower electrical conductance. In the second approach, a compact TiO2 barrier layer was created by sputter-coating 0-15 nm Ti metal films on FTO/glass and then oxidizing them into TiO2 with thermal treatment at 500 °C in the air for 30 min. The dye molecules were found to only attach at the outer surface of the barrier layer and slightly increased with the layer thickness. These two kinds of barrier layer showed different characteristics and may be tailored for different DSSC studies.

  7. Effect of W addition on the electroless deposited NiP(W) barrier layer

    NASA Astrophysics Data System (ADS)

    Tao, Yishi; Hu, Anmin; Hang, Tao; Peng, Li; Li, Ming

    2013-10-01

    Electroless deposition of NiP, NiWP thin film on p-type Si as the barrier layer to prevent the diffusion of Cu into Si was investigated. The thermal stability of the Si/Ni(W)P/Cu layers were evaluated by measuring the changes of resistance of the samples after annealed at various temperatures. XRD was applied to detect the formation of Cu3Si and evaluate the barrier performance of the layers. The results of XRD of the stacked Si/NiP/Cu, Si/NiWP-1/Cu, Si/NiWP-2/Cu films reveal that Cu atom could diffuse through NiP barrier layer at 450 °C, Cu could hardly diffuse through NiWP layer at 550 °C. This means that with W added in the layer, the barrier performance is improved. Although the resistance of Si/NiWP-1 and Si/NiWP-2 are higher than that of Si/NiP, the resistance of stacked layers of Si/NiWP-1/Cu and Si/NiWP-2/Cu are close to that of Si/NiP/Cu. This means that using NiWP as barrier layer is acceptable.

  8. Co-Rolled U10Mo/Zirconium-Barrier-Layer Monolithic Fuel Foil Fabrication Process

    SciTech Connect

    G. A. Moore; M. C. Marshall

    2010-01-01

    Integral to the current UMo fuel foil processing scheme being developed at Idaho National Laboratory (INL) is the incorporation of a zirconium barrier layer for the purpose of controlling UMo-Al interdiffusion at the fuel-meat/cladding interface. A hot “co-rolling” process is employed to establish a ~25-µm-thick zirconium barrier layer on each face of the ~0.3-mm-thick U10Mo fuel foil.

  9. Performance of 128×128 solar-blind AlGaN ultraviolet focal plane arrays

    NASA Astrophysics Data System (ADS)

    Yuan, Yongang; Zhang, Yan; Liu, Dafu; Chu, Kaihui; Wang, Ling; Li, Xiangyang

    2009-07-01

    Ozone layer intensively absorbs 240nm to 285 nm incidence, when the sunshine goes through stratospheric. There is almost no UVC (200nm-280nm) band radiation existing below stratospheric. Because the radiation target presents a strong contrast between atmosphere and background, solar-blind band radiation is very useful. Wide band gap materials, especially III-V nitride materials, have attracted extensive interest. The direct band gap of GaN and A1N is 3.4 and 6.2 eV, respectively. Since they are miscible with each other and form a complete series of AlGaN alloys, AlGaN has direct band gaps from 3.4 to 6.2 eV, corresponding to cutoff wavelengths from 365 to 200 nm. A back-illuminated hybrid FPA has been developed by Shanghai Institute of Technical Physics Chinese Academy of Science. This paper reports the performance of the 128x128 solar-blind AlGaN UV Focal Plane Arrays (FPAs). More and more a CTIA (capacitivetransimpedance) readout circuit architecture has been proven to be well suited for AlGaN detectors arrays. The bared readout circuit was first tested to find out optimal analog reference voltage. Second, this ROIC was tested in a standard 20-pin shielded dewar at 115 K to 330K. Then, a new test system was set up to obtain test UV FPA noise, swing voltage, data valid time, operating speed, dynamic range, UV response etc. The results show that 128x128 back-illuminated AlGaN PIN detector SNR is as high as 74db at the speed of above30 frame per second. Also, some noise test method is mentioned.

  10. Radiation Hard AlGaN Detectors and Imager

    SciTech Connect

    2012-05-01

    Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

  11. Influence of substrate miscut angle on surface morphology and luminescence properties of AlGaN

    SciTech Connect

    Kusch, Gunnar Edwards, Paul R.; Bruckbauer, Jochen; Martin, Robert W.; Li, Haoning; Parbrook, Peter J.; Sadler, Thomas C.

    2014-03-03

    The influence of substrate miscut on Al{sub 0.5}Ga{sub 0.5} N layers was investigated using cathodoluminescence (CL) hyperspectral imaging and secondary electron imaging in an environmental scanning electron microscope. The samples were also characterized using atomic force microscopy and high resolution X-ray diffraction. It was found that small changes in substrate miscut have a strong influence on the morphology and luminescence properties of the AlGaN layers. Two different types are resolved. For low miscut angle, a crack-free morphology consisting of randomly sized domains is observed, between which there are notable shifts in the AlGaN near band edge emission energy. For high miscut angle, a morphology with step bunches and compositional inhomogeneities along the step bunches, evidenced by an additional CL peak along the step bunches, are observed.

  12. Modelling of capacitance and threshold voltage for ultrathin normally-off AlGaN /GaN MOSHEMT

    NASA Astrophysics Data System (ADS)

    Swain, R.; Jena, K.; Lenka, T. R.

    2017-01-01

    A compact quantitative model based on oxide semiconductor interface density of states (DOS) is proposed for Al0.25Ga0.75N/GaN metal oxide semiconductor high electron mobility transistor (MOSHEMT). Mathematical expressions for surface potential, sheet charge concentration, gate capacitance and threshold voltage have been derived. The gate capacitance behaviour is studied in terms of capacitance-voltage (CV) characteristics. Similarly, the predicted threshold voltage ( V T) is analysed by varying barrier thickness and oxide thickness. The positive V T obtained for a very thin 3 nm AlGaN barrier layer enables the enhancement mode operation of the MOSHEMT. These devices, along with depletion mode devices, are basic constituents of cascode configuration in power electronic circuits. The expressions developed are used in conventional long-channel HEMT drain current equation and evaluated to obtain different DC characteristics. The obtained results are compared with experimental data taken from literature which show good agreement and hence endorse the proposed model.

  13. Control of the anodic aluminum oxide barrier layer opening process by wet chemical etching.

    PubMed

    Han, Catherine Y; Willing, Gerold A; Xiao, Zhili; Wang, H Hau

    2007-01-30

    In this work, it has been shown that, through a highly controlled process, the chemical etching of the anodic aluminum oxide membrane barrier layer can be performed in such a way as to achieve nanometer-scale control of the pore opening. As the barrier layer is etched away, subtle differences revealed through AFM phase imaging in the alumina composition in the barrier layer give rise to a unique pattern of hexagonal walls surrounding each of the barrier layer domes. These nanostructures observed in both topography and phase images can be understood as differences in the oxalate anion contaminated alumina versus pure alumina. This information bears significant implication for catalysis, template synthesis, and chemical sensing applications. From the pore opening etching studies, the etching rate of the barrier layer (1.3 nm/min) is higher than that of the inner cell wall (0.93 nm/min), both of which are higher than the etching rate of pure alumina layer (0.5-0.17 nm/min). The established etching rates together with the etching temperature allow one to control the pore diameter systematically from 10 to 95 nm.

  14. On the hydro-dispersive equivalence between multi-layered mineral barriers

    NASA Astrophysics Data System (ADS)

    Guyonnet, D.; Perrochet, P.; Côme, B.; Seguin, J.-J.; Parriaux, A.

    2001-10-01

    In the context of municipal solid waste and hazardous waste disposal, the notion of "equivalence" between different barrier designs appears in regulatory documents from several industrialized countries. While in the past, equivalence has been thought of mainly in terms of contaminant travel times, in recent years it has been defined more in terms of the magnitude of a disposal site's potential impact on groundwater resources. This paper presents some original analytical solutions to the problem of contaminant migration through a multi-layered mineral barrier. The solutions account for the two major mechanisms of subsurface contaminant migration, namely, advection and diffusion-dispersion. An example application using the proposed solutions and a numerical model illustrates how one multi-layered mineral barrier can be considered superior to another from a strictly hydro-dispersive viewpoint. The influence of partial saturation of the mineral barrier is investigated using a numerical solution to the Richards equation for unsaturated flow. It is emphasized that conclusions relative to the superiority of one multi-layered barrier, with respect to another, should not only consider hydro-dispersive aspects, but also other processes such as the mechanical and chemical evolutions of the different barrier components. Although such phenomena are poorly addressed by existing models, failure to take them into account, at least in a qualitative fashion, may lead to unconservative conclusions with respect to barrier equivalence.

  15. Investigation of Structure and Properties of Barrier Layers in Metals (Fe, Cu) at Low Temperatures

    NASA Astrophysics Data System (ADS)

    Kuterbekov, K. A.; Nurkenov, S. A.; Kislitsin, S. B.; Kuketayev, T. A.; Tussupbekova, A. K.

    2016-11-01

    Experimental studies of the effect of a barrier layer on the kinetics of thermally induced diffusion procesess and phase transformations in a layered Fe-Be syatem are investigated at the energy 1.6 MeV. Thermal stability of the barrier layer in the Fe:O+ system is validated and a possibility of its use as a subsurface layer for a beryllium coating is demonstrated. For the Cu:O+ system it is shown that the implanted layer in the matrix comes apart already at the annealing temperature 180°C and could not be used in a copper matrix as a subsurface barrier layer. For the first time, a method is proposed for retardation of diffusion and phase formation processes and realized in a layered iron - beryllium system using an implanted layer of oxygen ions. The sequence and characteristic times of thermally-induced phase-transformation processes taking place in the subsurface layers and in the bulk of the Fe (10 μm) systems: O+ - Be (0.7 μm) - 57Fe (0.1 μm) and Fe (10 μm) - Be (0.7 μm) - 57Fe (0.1 μm) are determined.

  16. Diffusion barrier performance of novel Ti/TaN double layers for Cu metallization

    NASA Astrophysics Data System (ADS)

    Zhou, Y. M.; He, M. Z.; Xie, Z.

    2014-10-01

    Novel Ti/TaN double layers offering good stability as a barrier against Cu metallization have been made achievable by annealing in vacuum better than 1 × 10-3 Pa. Ti/TaN double layers were formed on SiO2/Si substrates by DC magnetron sputtering and then the properties of Cu/Ti/TaN/SiO2/Si film stacks were studied. It was found that the Ti/TaN double layers provide good diffusion barrier between Cu and SiO2/Si up to 750 °C for 30 min. The XRD, Auger and EDS results show that the Cu-Si compounds like Cu3Si were formed by Cu diffusion through Ti/TaN barrier for the 800 °C annealed samples. It seems that the improved diffusion barrier property of Cu/Ti/TaN/SiO2/Si stack is due to the diffusion of nitrogen along the grain boundaries in Ti layer, which would decrease the defects in Ti film and block the diffusion path for Cu diffusion with increasing annealing temperature. The failure mechanism of Ti/TaN bi-layer is similar to the Cu/TaN/Si metallization system in which Cu atoms diffuse through the grain boundary of barrier and react with silicon to form Cu3Si.

  17. Relaxation of compressively-strained AlGaN by inclined threading dislocations

    NASA Astrophysics Data System (ADS)

    Follstaedt, D. M.; Lee, S. R.; Provencio, P. P.; Allerman, A. A.; Floro, J. A.; Crawford, M. H.

    2005-09-01

    Transmission electron microscopy and x-ray diffraction were used to assess the microstructure and strain of AlxGa1-xN(x=0.61-0.64) layers grown on AlN. The compressively-strained AlGaN is partially relaxed by inclined threading dislocations, similar to observations on Si-doped AlGaN by P. Cantu, F. Wu, P. Waltereit, S. Keller, A. E. Romanov, U. K. Mishra, S. P. DenBaars, and J. S. Speck [Appl. Phys. Lett. 83, 674 (2003)]; however, in our material, the dislocations bend before the introduction of any Si. The bending may be initiated by the greater lattice mismatch or the lower dislocation density of our material, but the presence of Si is not necessarily required. The relaxation by inclined dislocations is quantitatively accounted for with the model of A. E. Romanov and J. S. Speck [Appl. Phys. Lett. 83, 2569 (2003)], and we demonstrate the predicted linear dependence of relaxation on layer thickness. Notably, such relaxation was not found in tensile strained AlGaN grown on GaN [J. A. Floro, D. M. Follstaedt, P. Provencio, S. J. Hearne, and S. R. Lee, J. Appl. Phys. 96, 7087 (2004)], even though the same mechanism appears applicable.

  18. Relaxation of compressively strained AlGaN by inclined threading dislocations.

    SciTech Connect

    Follstaedt, David Martin; Lee, Stephen Roger; Crawford, Mary Hagerott; Provencio, Paula Polyak; Allerman, Andrew Alan; Floro, Jerrold Anthony

    2005-06-01

    Transmission electron microscopy and x-ray diffraction were used to assess the microstructure and strain of Al{sub x}Ga{sub 1?x}N(x = 0.61-0.64) layers grown on AlN. The compressively-strained AlGaN is partially relaxed by inclined threading dislocations, similar to observations on Si-doped AlGaN by P. Cantu, F. Wu, P. Waltereit, S. Keller, A. E. Romanov, U. K. Mishra, S. P. DenBaars, and J. S. Speck [Appl. Phys. Lett. 83, 674 (2003) ]; however, in our material, the dislocations bend before the introduction of any Si. The bending may be initiated by the greater lattice mismatch or the lower dislocation density of our material, but the presence of Si is not necessarily required. The relaxation by inclined dislocations is quantitatively accounted for with the model of A. E. Romanov and J. S. Speck [Appl. Phys. Lett. 83, 2569 (2003)], and we demonstrate the predicted linear dependence of relaxation on layer thickness. Notably, such relaxation was not found in tensile strained AlGaN grown on GaN [J. A. Floro, D. M. Follstaedt, P. Provencio, S. J. Hearne, and S. R. Lee, J. Appl. Phys. 96, 7087 (2004)], even though the same mechanism appears applicable.

  19. Single layer graphene protective gas barrier for copper photocathodes

    NASA Astrophysics Data System (ADS)

    Liu, Fangze; Moody, Nathan A.; Jensen, Kevin L.; Pavlenko, Vitaly; Narvaez Villarrubia, Claudia W.; Mohite, Aditya D.; Gupta, Gautam

    2017-01-01

    Photocathodes can benefit from a thin protection layer and attain long-term stability. Graphene is potentially a good candidate for such application. We report direct growth of single-layer graphene on single crystal Cu(110) photocathodes using chemical vapor deposition and the effective protection of copper photocathodes with graphene against degradation under atmospheric conditions. Due to the interaction and charge transfer between graphene and copper, the graphene-protected cathodes have 0.25 eV lower work function and 17% higher quantum efficiency at 250 nm compared with bare Cu cathodes. The graphene coating can protect copper photocathodes from degradation for more than 20 min in an exposure to 200 Torr of air. The validation of graphene-photocathode compatibility opens a new route to the lifetime-extension for photocathodes.

  20. Two-layer thermal barrier coating for turbine airfoils - furnace and burner rig test results

    NASA Technical Reports Server (NTRS)

    Stecura, S.

    1976-01-01

    A simple, two-layer plasma-sprayed thermal barrier coating system was developed which has the potential for protecting high temperature air-cooled gas turbine components. Of those coatings initially examined, the most promising system consisted of a Ni-16Cr-6Al-0.6Y (in wt%) thermal barrier coating (about 0.005 to 0.010 cm thick) and a ZrO2-12Y2O3 (in wt%) thermal barrier coating (about 0.025 to 0.064 cm thick). This thermal barrier substantially lowered the metal temperature of an air-cooled airfoil. The coating withstood 3,200 cycles (80 sec at 1,280 C surface temperature) and 275 cycles (1 hr at 1,490 C surface temperature) without cracking or spalling. No separation of the thermal barrier from the bond coating or the bond coating from the substrate was observed.

  1. Low-Cost Protective Layer Coatings on Thermal Barrier Coatings via CCVD. Final Report

    SciTech Connect

    Hendrick, Michelle

    2003-09-18

    MicroCoating Technologies, Inc., investigated the use of the Combustion Chemical Vapor Deposition (CCVD) process to deposit oxygen or sintering barrier coatings for thermal barrier coating (TBC) applications. In addition, it looked at the use of its nanopowders by the NanoSpray process for developing smoothing layers on TBCs. Testing and analysis of coated substrates included heat treatments, scanning electron microscopy, x-ray diffraction and profilometry. Coatings on TBC-coated superalloy coupons were tested by an outside collaborator. Results from the investigations indicated that the thin film coatings were not well-suited as barrier layers on the rough bond coat or TBC. Subsequent investigations considered smoothing layers on the TBC, as suggested by the collaborator, using nanopowder-based coatings. Smoothing of substrate surfaces by 50% was observed by profilometry.

  2. Short-period intrinsic Stark GaN /AlGaN superlattice as a Bloch oscillator

    NASA Astrophysics Data System (ADS)

    Litvinov, V. I.; Manasson, A.; Pavlidis, D.

    2004-07-01

    We discuss the properties of AlGaN /GaN superlattice (SL) related to the feasibility of a terahertz-range oscillator. The distortion of the conduction-band profile by the polarization fields has been taken into account. We have calculated the conduction-band offset between the pseudomorphic AlGaN barrier and the GaN quantum well, the first miniband width and energy dispersion, as functions of Al content in the barrier. As the short-period SL miniband energy dispersion contains contributions from next to nearest neighbors, it causes anharmonic electron oscillations at the multiples of the fundamental Bloch frequency. The Al content and SL period that favor high-frequency oscillations have been determined.

  3. Investigation of Diffusion Barrier Layers for Bi-Doped Mg2(Si,Ge) Thermoelectric Legs

    NASA Astrophysics Data System (ADS)

    Prahoveanu, Codrin; Laversenne, Laetitia; de Vaulx, Cédric; Bès, Alexandre; Azzouz, Kamel; Lacoste, Ana

    2016-11-01

    The performance of thermoelectric (TE) modules is governed not only by the thermoelectric materials whose properties are capitalized, but also on the quality of the electrical contacts which are ubiquitous in the design of the device. To ensure the necessary stability of the interfaces between the TE materials and the electrodes, diffusion barriers are generally used. In this study, attempts are presented in finding diffusion barriers that would be suitable for Mg2(Si,Ge) TE materials. These involved the deposition by microwave plasma-assisted co-sputtering of intermediate gradient layers starting from Mg and Si, ending up with a Ni layer, or the deposition of metallic layers (Ti, Cr, W and Ta). The effectiveness of the deposited layers as diffusion barriers is assessed after the legs were subjected to a brazing process, with the results favoring the use of gradient layers with a thick Ni layer and metallic layers based on Ta and Cr, despite some adherence issues for the latter.

  4. New Method to Determine the Schottky Barrier in Few-Layer Black Phosphorus Metal Contacts.

    PubMed

    Lee, Su Yeong; Yun, Won Seok; Lee, J D

    2017-03-01

    Schottky barrier height and carrier polarity are seminal concepts for a practical device application of the interface between semiconductor and metal electrode. Investigation of those concepts is usually made by a conventional method such as the Schottky-Mott rule, incorporating the metal work function and semiconductor electron affinity, or the Fermi level pinning effect, resulting from the metal-induced gap states. Both manners are, however, basically applied to the bulk semiconductor metal contacts. To explore few-layer black phosphorus metal contacts far from the realm of bulk, we propose a new method to determine the Schottky barrier by scrutinizing the layer-by-layer phosphorus electronic structure from the first-principles calculation combined with the state-of-the-art band unfolding technique. In this study, using the new method, we calculate the Schottky barrier height and determine the contact polarity of Ti, Sc, and Al metal contacts to few-layer (mono-, bi-, tri-, and quadlayer) black phosphorus. This gives a significant physical insight toward the utmost layer-by-layer manipulation of electronic properties of few-layer semiconductor metal contacts.

  5. High thermal stability of magnetic tunnel junctions with oxide diffusion barrier layers

    NASA Astrophysics Data System (ADS)

    Fukumoto, Yoshiyuki; Shimura, Ken-ichi; Kamijo, Atsushi; Tahara, Shuichi; Yoda, Hiroaki

    2004-01-01

    We developed two types of magnetic tunnel junctions (MTJs) that showed high thermal stability. One is a PtMn exchange-biased spin-valve MTJ with a CoFe/Al-oxide (AlOx)/NiFe free layer and a CoFeTaOx/CoFe pinned layer, and the other is a pseudo-spin-valve (PSV) MTJ with a CoFe/AlOx/NiFe soft layer, where AlOx and CoFeTaOx act as barriers for Ni and Mn diffusion toward the tunnel barrier, respectively. After 390 °C-1H annealing, the PSV MTJs maintained 28% and the SV MTJs 39% of tunnel magnetoresistance. Transmission electron microscopy observation of the SV MTJs after 380 °C-1H annealing revealed that the migrated Mn atoms were trapped at the CoFeTaOx layer.

  6. High-flux Thin-film Nanofibrous Composite Ultrafiltration Membranes Containing Cellulose Barrier Layer

    SciTech Connect

    Ma, H.; Yoon, K; Rong, L; Mao, Y; Mo, Z; Fang, D; Hollander, Z; Gaiteri, J; Hsiao , B; Chu, B

    2010-01-01

    A novel class of thin-film nanofibrous composite (TFNC) membrane consisting of a cellulose barrier layer, a nanofibrous mid-layer scaffold, and a melt-blown non-woven substrate was successfully fabricated and tested as an ultrafiltration (UF) filter to separate an emulsified oil and water mixture, a model bilge water for on-board ship bilge water purification. Two ionic liquids: 1-butyl-3-methylimidazolium chloride and 1-ethyl-3-methylimidazolium acetate, were chosen as the solvent to dissolve cellulose under mild conditions. The regenerated cellulose barrier layer exhibited less crystallinity (determined by wide-angle X-ray diffraction, WAXD) than the original cotton linter pulps, but good thermal stability (determined by thermal gravimetric analysis, TGA). The morphology, water permeation, and mechanical stability of the chosen TFNCmembranes were thoroughly investigated. The results indicated that the polyacrylonitrile (PAN) nanofibrous scaffold was partially imbedded in the cellulose barrier layer, which enhanced the mechanical strength of the top barrier layer. The permeation flux of the cellulose-based TFNCmembrane was significantly higher (e.g. 10x) than comparable commercial UFmembranes (PAN10 and PAN400, Sepro) with similar rejection ratios for separation of oil/water emulsions. The molecular weight cut-off (MWCO) of TFNC membranes with cellulose barrier layer was evaluated using dextran feed solutions. The rejection was found to be higher than 90% with a dextran molecular weight of 2000 KDa, implying that the nominal pore size of the membrane was less than 50 nm. High permeation flux was also observed in the filtration of an emulsified oil/water mixture as well as of a sodium alginate aqueous solution, while high rejection ratio (above 99.5%) was maintained after prolonged operation. A variation of the barrier layer thickness could dramatically affect the permeation flux and the rejection ratio of the TFNCmembranes, while different sources of cellulose

  7. Organo-montmorillonite Barrier Layers Formed by Combustion: Nanostructure and Permeability

    SciTech Connect

    Fox, James B; Ambuken, Preejith V.; Stretz, Holly A; Meisner, Roberta Ann; Payzant, E Andrew

    2010-01-01

    Self-assembly of nanoparticles into barrier layers has been the most cited theoretical explanation for the significant reduction in flammability often noted for nanocomposites formed from polymers and montmorillonite organoclays. Both mass and heat transport reductions have been credited for such improvements, and in most cases a coupled mechanism is expected. To provide validation for early models, new model barrier layers were produced from organoclays, and these barrier layers subjected to novel permeability analysis to obtain a flux. The effects of surfactant, temperature and pressure on barrier layer structure were examined. XRD versus TGA results suggest that chemical degradation of four different organoclays and physical collapse on heating are not correlated. Addition of pressure as low as 7kPa also altered the structure produced. Permeability of Ar through the ash was found to be sensitive to structural change/self assembly of high aspect ratio MMT nanoparticles. Actual fluxes ranged from 0.139 to 0.151 mol(m2.sec)-1, values which will provide useful limits in verifying models for the coupled contribution of mass and heat transfer to flammability parameters such as peak heat release rate.

  8. Separated effects of ions, metastables and photons on the properties of barrier layers on polymers

    NASA Astrophysics Data System (ADS)

    Biskup, Beatrix; Boeke, Marc; Benedikt, Jan; von Keudell, Achim

    2016-09-01

    Analyses of a-C:H /a-Si:H multilayers on polymer substrates indicated that prolonged ion bombardment influences negatively the properties of the barrier layer, while a short plasma pretreatment can improve the barrier effect. This work is motivated by these results and investigates the influence of different reactive plasma components, namely ions, metastables and VUV-photons, on the properties of the grown barrier layer. To separate the different species and their influence on plasma pretreatment and film growth, we build a grid system, which repels the ions from the substrate, so that only metastables and VUV-photons have an effect on the layer. An integral part of this investigation is, to measure the photon fluxes to the substrate by an intensity calibrated VUV monochromator. For that, a differentially pumped monochromator with a spectral range 30 - 300 nm is used, where the two most prominent argon lines at 104.9 and 106.8 nm can be measured. In this approach we are able to study the different effects of the plasma species and also possible synergy effects, to improve the properties of the barrier layer. This work is supported by the DFG within the SFB-TR 87.

  9. Effects of tensile stress induced by silicon nitride passivation on electrical characteristics of AlGaN /GaN heterostructure field-effect transistors

    NASA Astrophysics Data System (ADS)

    Jeon, Chang Min; Lee, Jong-Lam

    2005-04-01

    The effects of tensile stress induced by silicon nitride (Si3N4) passivation on electrical characteristics of AlGaN /GaN heterostructure field-effect transistors (HFETs) were investigated. The biaxial tensile stress applied to the AlGaN layer was increased with the thickness of the Si3N4 passivation layer, leading to the increase of sheet charge density confined at the heterointerface. The stress-induced charge density was 1.75×1011e/cm2 for 80-nm-thick Si3N4 and 6.74×1011e/cm2 for 500-nm-thick Si3N4. The maximum drain current and transconductance of AlGaN /GaN HFET increased from 769 to 858mA/mm and from 146 to 155mS/mm after passivation, respectively.

  10. Improving an organic photodiode by incorporating a tunnel barrier between the donor and acceptor layers

    NASA Astrophysics Data System (ADS)

    Campbell, I. H.; Crone, B. K.

    2012-07-01

    We demonstrate increased photocurrent quantum efficiency in a model donor/acceptor (tetracene/C60) photodiode by incorporating an insulating tunnel barrier between the tetracene and C60 layers. Photodiode efficiency results from the interplay of a number of processes which add to or subtract from the overall device efficiency. The positive rates are those of exciton dissociation and charge separation, the negative rates include exciton and charge transfer complex recombination. We show that by introducing a thin insulating layer between the donor and acceptor layers in a photodiode, we can modify the exciton dissociation and charge transfer complex recombination rates and improve device performance.

  11. Interaction of Cu with CoSi2 with and without TiNx barrier layers

    NASA Astrophysics Data System (ADS)

    Olowolafe, J. O.; Li, Jian; Blanpain, B.; Mayer, J. W.

    1990-09-01

    Thermally induced interactions of Cu with CoSi2, with and without interposed TiNx layers, have been studied using Rutherford backscattering spectrometry, Auger electron spectroscopy, and x-ray diffraction. Cu diffuses through a preformed CoSi2 layer to form the structure Cu/CoSi2/Cu3Si/Si at temperatures above 300 °C, and no dissociation of CoSi2 occurs. A 50 nm TiNx(x≊1) layer is observed to be an effective diffusion barrier up to about 500 °C between Cu and CoSi2.

  12. Development of Barrier Layers for the Protection of Candidate Alloys in the VHTR

    SciTech Connect

    Levi, Carlos G.; Jones, J. Wayne; Pollock, Tresa M.; Was, Gary S.

    2015-01-22

    The objective of this project was to develop concepts for barrier layers that enable leading candi- date Ni alloys to meet the longer term operating temperature and durability requirements of the VHTR. The concepts were based on alpha alumina as a primary surface barrier, underlay by one or more chemically distinct alloy layers that would promote and sustain the formation of the pro- tective scale. The surface layers must possess stable microstructures that provide resistance to oxidation, de-carburization and/or carburization, as well as durability against relevant forms of thermo-mechanical cycling. The system must also have a self-healing ability to allow endurance for long exposure times at temperatures up to 1000°C.

  13. Surface barrier height for different Al compositions and barrier layer thicknesses in AlGaN/GaN heterostructure field effect transistors

    SciTech Connect

    Goyal, Nitin Fjeldly, Tor A.; Iniguez, Benjamin

    2013-12-04

    In this paper, we present a physics based analytical model for the calculation of surface barrier height for given values of barrier layer thicknesses and Al mole fractions. An explicit expression for the two dimensional electron gas density is also developed incorporating the change in polarization charges for different Al mole fractions.

  14. Using fugacity to predict volatile emissions from layered materials with a clay/polymer diffusion barrier

    NASA Astrophysics Data System (ADS)

    Yuan, Huali; Little, John C.; Marand, Eva; Liu, Zhe

    Structural insulated panels (SIPs) have significant environmental and energy advantages. However, the tight structure that results may cause degraded indoor air quality and the potential release of volatile organic compounds (VOCs) from these layered materials must be considered. A physically based model for predicting VOC emissions from multi-layer materials is described. Fugacity is used to eliminate the concentration discontinuities at the interface between layers. This avoids an obstacle associated with numerically simulating mass transfer in composite materials. The numerical model is verified for a double-layer system by comparing predicted concentrations to those obtained with a previously published analytical model. In addition, hexanal emissions from multi-layer SIPs are simulated to demonstrate the usefulness of the fugacity approach. Finally, the multi-layer model is used to investigate the impact that clay/polyurethane nanocomposite diffusion barriers can have on VOC emissions. Indoor gas-phase concentrations can be greatly reduced with a barrier layer on the surface, thereby minimizing the environmental impact of SIPs.

  15. Electroless deposition of NiCrB diffusion barrier layer film for ULSI-Cu metallization

    NASA Astrophysics Data System (ADS)

    Wang, Yuechun; Chen, Xiuhua; Ma, Wenhui; Shang, Yudong; Lei, Zhengtao; Xiang, Fuwei

    2017-02-01

    NiCrB films were deposited on Si substrates using electroless deposition as a diffusion barrier layer for Cu interconnections. Samples of the prepared NiCrB/SiO2/Si and NiCrB/Cu/NiCrB/SiO2/Si were annealed at temperatures ranging from 500 °C to 900 °C. The reaction mechanism of the electroless deposition of the NiCrB film, the failure temperature and the failure mechanism of the NiCrB diffusion barrier layer were investigated. The prepared samples were subjected to XRD, XPS, FPP and AFM to determine the phases, composition, sheet resistance and surface morphology of samples before and after annealing. The results of these analyses indicated that the failure temperature of the NiCrB barrier film was 900 °C and the failure mechanism led to crystallization and grain growth of the NiCrB barrier layer after high temperature annealing. It was found that this process caused Cu grains to reach Si substrate through the grain boundaries, and then the reaction between Cu and Si resulted in the formation of highly resistive Cu3Si.

  16. Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers

    SciTech Connect

    Rampelberg, Geert; Devloo-Casier, Kilian; Deduytsche, Davy; Detavernier, Christophe; Blasco, Nicolas

    2013-03-18

    Thin vanadium nitride (VN) layers were grown by atomic layer deposition using tetrakis(ethylmethylamino)vanadium and NH{sub 3} plasma at deposition temperatures between 70 Degree-Sign C and 150 Degree-Sign C on silicon substrates and polymer foil. X-ray photoelectron spectroscopy revealed a composition close to stoichiometric VN, while x-ray diffraction showed the {delta}-VN crystal structure. The resistivity was as low as 200 {mu}{Omega} cm for the as deposited films and further reduced to 143 {mu}{Omega} cm and 93 {mu}{Omega} cm by annealing in N{sub 2} and H{sub 2}/He/N{sub 2}, respectively. A 5 nm VN layer proved to be effective as a diffusion barrier for copper up to a temperature of 720 Degree-Sign C.

  17. Determination of the Schottky barrier height of ferromagnetic contacts to few-layer phosphorene

    SciTech Connect

    Anugrah, Yoska; Robbins, Matthew C.; Koester, Steven J.; Crowell, Paul A.

    2015-03-09

    Phosphorene, the 2D analogue of black phosphorus, is a promising material for studying spin transport due to its low spin-orbit coupling and its ½ nuclear spin, which could allow the study of hyperfine effects. In this work, the properties of permalloy (Py) and cobalt (Co) contacts to few-layer phosphorene are presented. The Schottky barrier height was extracted and determined as a function of gate bias. Flat-band barrier heights, relative to the valence band edge, of 110 meV and 200 meV were determined for Py and Co, respectively. These results are important for future studies of spin transport in phosphorene.

  18. Fundamental studies of diffusion barriers for copper metallization and atomic layer deposited high-kappa films

    NASA Astrophysics Data System (ADS)

    Majumder, Prodyut

    Copper is used as interconnect material due to its lower resistivity, higher melting point and higher electromigration resistance than those of Al. However, Cu diffuses rapidly into Si and SiO2, to form Cu-silicides at temperatures as low as 200°C. Being highly resistive, Cu-silicides are detrimental in the performance of the integrated circuits. The continued downscaling of device dimensions has placed a high priority on the development of thin diffusion barrier layers in copper metallization. The effectiveness and performance of Mo-based bi-layers, such as Mo/WN, Mo/Ti, and Mo/TiN, and a ternary single layer, Mo-V nitride, deposited using magnetron sputtering are investigated in this work. The Cu/barrier film(s)/Si structures are annealed at high temperatures in N2 and the interactions between the layers along with the possible formation of any anneal-induced reaction products are evaluated using different techniques. The formation of Cu3Si due to the intermixing of Cu and Si is indicative of barrier breakdown. The decreasing device dimensions in microelectronic circuits set high demands for film conformality as the barrier layer thickness is anticipated to decrease to 1.9 nm for the 25 nm node (by 2015). In order to meet future requirement of ultrathin barriers, the apparently counter-intuitive approach of using insulating films, such as HfO2 and Al2O 3, deposited using atomic layer deposition (ALD) technique has been studied and revealed interesting and promising results. In microelectronics fabrication, there is also a need for thin films with high dielectric constant (kappa) in order to continue device dimension reduction of logic and memory devices. With conventional SiO2 based materials, continued scale minimization mandates single digit atomic layer thicknesses of the dielectric layers that lead to the ultimate limitation of quantum mechanical tunneling. To overcome this limitation, high-kappa metal oxides have been recognized as future gate dielectrics

  19. Ceramic barrier layers for flexible thin film solar cells on metallic substrates: a laboratory scale study for process optimization and barrier layer properties.

    PubMed

    Delgado-Sanchez, Jose-Maria; Guilera, Nuria; Francesch, Laia; Alba, Maria D; Lopez, Laura; Sanchez, Emilio

    2014-11-12

    Flexible thin film solar cells are an alternative to both utility-scale and building integrated photovoltaic installations. The fabrication of these devices over electrically conducting low-cost foils requires the deposition of dielectric barrier layers to flatten the substrate surface, provide electrical isolation between the substrate and the device, and avoid the diffusion of metal impurities during the relatively high temperatures required to deposit the rest of the solar cell device layers. The typical roughness of low-cost stainless-steel foils is in the hundred-nanometer range, which is comparable or larger than the thin film layers comprising the device and this may result in electrical shunts that decrease solar cell performance. This manuscript assesses the properties of different single-layer and bilayer structures containing ceramics inks formulations based on Al2O3, AlN, or Si3N4 nanoparticles and deposited over stainless-steel foils using a rotogravure printing process. The best control of the substrate roughness was achieved for bilayers of Al2O3 or AlN with mixed particle size, which reduced the roughness and prevented the diffusion of metals impurities but AlN bilayers exhibited as well the best electrical insulation properties.

  20. Compositional inhomogeneities in AlGaN thin films grown by molecular beam epitaxy: Effect on MSM UV photodetectors

    NASA Astrophysics Data System (ADS)

    Pramanik, Pallabi; Sen, Sayantani; Singha, Chirantan; Roy, Abhra Shankar; Das, Alakananda; Sen, Susanta; Bhattacharyya, A.

    2016-10-01

    Ultraviolet (UV) MSM photodetectors (PD) based on AlGaN alloys find many applications, including flame sensing. In this work we investigate the dependence of AlGaN based photodetectors grown by MBE on the kinetics of growth. MSM photodetectors were fabricated in the interdigitated configuration with Ni/Au contacts having 400 μm finger length and 10 μm finger spacing. Bulk Al0.4Ga0.6N films were grown on to sapphire substrates using an AlN buffer layer. A series of PDs were developed using the Al0.4Ga0.6N films grown under different group III/V flux ratios ranging from stoichiometric conditions to much higher than unity. Upon testing, it was observed that the otherwise identical photodetectors show significant decrease in dark current as AlGaN deposition conditions change from stoichiometric to excess group III, due to reduction of unintentional incorporation of oxygen-related point defects. In addition, the intensity and spectral dependence of the photocurrent also change, showing an extended low energy tail for the former and a sharp and prominent excitonic peak for the latter. The optical transmission measurements indicate a variation in Urbach energy with deposition conditions of the AlGaN films, although they have the same absorption edge. While all samples show a single red-shifted photoluminescence peak at room temperature, upon cooling, multiple higher energy peaks appear in the photoluminescence (PL) spectra, indicating that the alloys contain complex compositional inhomogeneities. Two types of alloy fluctuations, determined by the growth conditions, have been identified that modulate the optoelectronic properties of AlGaN by changing the spatial localization of excitons, thereby altering their stability. We identified that growth under stoichiometric conditions leads to compositional inhomogeneities that play a detrimental role in the operation of MSM photodetectors, which reduces the sharpness of the sensitivity edge, while growth under excess metal

  1. 1-nm-thick graphene tri-layer as the ultimate copper diffusion barrier

    SciTech Connect

    Nguyen, Ba-Son; Lin, Jen-Fin

    2014-02-24

    We demonstrate the thinnest ever reported Cu diffusion barrier, a 1-nm-thick graphene tri-layer. X-ray diffraction patterns and Raman spectra show that the graphene is thermally stable at up to 750 °C against Cu diffusion. Transmission electron microscopy images show that there was no inter-diffusion in the Cu/graphene/Si structure. Raman analyses indicate that the graphene may have degraded into a nanocrystalline structure at 750 °C. At 800 °C, the perfect carbon structure was damaged, and thus the barrier failed. The results of this study suggest that graphene could be the ultimate Cu interconnect diffusion barrier.

  2. New model of the pinning potential barrier in layered HTc superconductors

    NASA Astrophysics Data System (ADS)

    Sosnowski, J.

    2016-11-01

    New model of the pinning potential barrier in multilayered HTc superconductors is presented, based on geometrical approach to the capturing interaction of pancake-type vortices with nano-sized defects. Using the above model the transport current flow phenomena in these materials, especially the current-voltage characteristics and critical current density, have been considered. Details of theoretical analysis are given, including the derivation of basic mathematical equations describing the potential barrier as a function of transport current intensity and the initial position of captured pancake vortex. Computer simulation has been performed of the influence of transport current amplitude on the potential barrier height for various sizes of pinning centers and initial pancake vortex position as well as the influence of fast neutrons irradiation creating nano-sized defects on critical current of HTc layered superconductor.

  3. Alumina Paste Layer as a Sublimation Suppression Barrier for Yb14MnSb11

    NASA Technical Reports Server (NTRS)

    Paik, Jong-Ah; Caillat, Thierry

    2010-01-01

    Sublimation is a major cause of degradation of thermoelectric power generation systems. Most thermoelectric materials tend to have peak values at the temperature where sublimation occurs. A sublimation barrier is needed that is stable at operating temperatures, inert against thermoelectric materials, and able to withstand thermal cycling stress. A porous alumina paste layer is suitable as a sublimation barrier for Yb14MnSb11. It can accommodate stress generated by the thermal expansion discrepancy between the suppression layer and thermoelectric materials. Sublimation suppression is achieved by filling pores naturally with YbO2, a natural byproduct of sublimation. YbO2 generated during the sublimation of Yb14MnSb11 fills the porous structure of the alumina paste, causing sublimation to decrease with time as the pores become filled.

  4. Mechanisms governing the interfacial delamination of thermal barrier coating system with double ceramic layers

    NASA Astrophysics Data System (ADS)

    Xu, Rong; Fan, Xueling; Wang, T. J.

    2016-05-01

    A systematic study of factors affecting the interfacial delamination of thermal barrier coating system (TBCs) with double ceramic layers (DCL) is presented. Crack driving forces for delaminations at two weak interfaces are examined. The results show that a thicker outermost ceramic layer can induce dramatic increase in crack driving force and make the interface between two ceramic coatings become more prone to delamination. The behavior is shown to be more prominent in TBCs with stiffer outmost coating. The thickness ratio of two ceramic layers is an important parameter for controlling the failure mechanisms and determining the lifetime of DCL TBCs under inservice condition. By accounting for the influences of thickness ratio of two ceramic layers and interfacial fracture toughnesses of two involved interfaces, the fracture mechanism map of DCL TBCs has been constructed, in which different failure mechanisms are identified. The results quanlitatively agree with the aviliable experimental data.

  5. Dielectric barrier discharge control of a turbulent boundary layer in a supersonic flow

    SciTech Connect

    Im, S.; Do, H.; Cappelli, M. A.

    2010-07-26

    We demonstrate effective manipulation of a turbulent boundary layer at Mach 4.7 conditions using a surface dielectric barrier discharge (DBD) actuator. The freestream conditions of low static pressure (1 kPa) and temperature (60 K) are conducive to the visualization of flow features using Rayleigh scattering from condensed CO{sub 2} particles. The boundary layer thinning is observed when spanwise momentum is induced by the low power (6.8 W), low frequency (28 kHz) single actuator pair oriented parallel to the freestream flow.

  6. Suitability of polystyrene as a functional barrier layer in coloured food contact materials.

    PubMed

    Genualdi, Susan; Addo Ntim, Susana; Begley, Timothy

    2015-01-01

    Functional barriers in food contact materials (FCMs) are used to prevent or reduce migration from inner layers in multilayer structures to food. The effectiveness of functional barrier layers was investigated in coloured polystyrene (PS) bowls due to their intended condition of use with hot liquids such as soups or stew. Migration experiments were performed over a 10-day period using USFDA-recommended food simulants (10% ethanol, 50% ethanol, corn oil and Miglyol) along with several other food oils. At the end of the 10 days, solvent dyes had migrated from the PS bowls at 12, 1 and 31,000 ng cm(-)(2) into coconut oil, palm kernel oil and Miglyol respectively, and in coconut oil and Miglyol the colour change was visible to the human eye. Scanning electron microscope (SEM) images revealed that the functional barrier was no longer intact for the bowls exposed to coconut oil, palm kernel oil, Miglyol, 10% ethanol, 50% ethanol and goat's milk. Additional tests showed that 1-dodecanol, a lauryl alcohol derived from palm kernel oil and coconut oil, was present in the PS bowls at an average concentration of 11 mg kg(-1). This compound is likely to have been used as a dispersing agent for the solvent dye and aided the migration of the solvent dye from the PS bowl into the food simulant. The solvent dye was not found in the 10% ethanol, 50% ethanol and goat's milk food simulants above their respective limits of detection, which is likely to be due to its insolubility in aqueous solutions. A disrupted barrier layer is of concern because if there are unregulated materials in the inner layers of the laminate, they may migrate to food, and therefore be considered unapproved food additives resulting in the food being deemed adulterated under the Federal Food Drug and Cosmetic Act.

  7. Observations of capillary barriers and preferential flow in layered snow during cold laboratory experiments

    NASA Astrophysics Data System (ADS)

    Avanzi, Francesco; Hirashima, Hiroyuki; Yamaguchi, Satoru; Katsushima, Takafumi; De Michele, Carlo

    2016-09-01

    Data of liquid water flow around a capillary barrier in snow are still limited. To gain insight into this process, we carried out observations of dyed water infiltration in layered snow at 0 °C during cold laboratory experiments. We considered three different finer-over-coarser textures and three different water input rates. By means of visual inspection, horizontal sectioning, and measurements of liquid water content (LWC), capillary barriers and associated preferential flow were characterized. The flow dynamics of each sample were also simulated solving the Richards equation within the 1-D multi-layer physically based snow cover model SNOWPACK. Results revealed that capillary barriers and preferential flow are relevant processes ruling the speed of water infiltration in stratified snow. Both are marked by a high degree of spatial variability at centimeter scale and complex 3-D patterns. During unsteady percolation of water, observed peaks in bulk volumetric LWC at the interface reached ˜ 33-36 vol % when the upper layer was composed by fine snow (grain size smaller than 0.5 mm). However, LWC might locally be greater due to the observed heterogeneity in the process. Spatial variability in water transmission increases with grain size, whereas we did not observe a systematic dependency on water input rate for samples containing fine snow. The comparison between observed and simulated LWC profiles revealed that the implementation of the Richards equation reproduces the existence of a capillary barrier for all observed cases and yields a good agreement with observed peaks in LWC at the interface between layers.

  8. Formation of color centers in a thin layer of LiF crystals under VUV radiation from a barrier discharge

    NASA Astrophysics Data System (ADS)

    Milyutina, E. V.; Petrovskii, A. F.; Rakevich, A. L.; Martynovich, E. F.

    2014-05-01

    Under radiation from a barrier discharge, luminescent color centers are formed in a surface layer of lithium fluoride crystal served as a dielectric barrier. Analysis of the damping kinetics and luminescence spectra has revealed these centers to be F {3/+} and F 2 centers. Structural defects are mainly formed via the photon-induced mechanism (i.e., defects are formed due to the generation of electron-hole pairs as a result of absorption of photons of barrier-discharge radiation). Barrier discharge in different gases can be successfully used to form thin layers containing luminescence centers on the surface of transparent insulators for various scientific and practical applications.

  9. Morphological instability of Ag films caused by phase transition in the underlying Ta barrier layer

    SciTech Connect

    Mardani, Shabnam Vallin, Örjan; Wätjen, Jörn Timo; Norström, Hans; Olsson, Jörgen; Zhang, Shi-Li

    2014-08-18

    Wide-bandgap (WBG) semiconductor technologies are maturing and may provide increased device performance in many fields of applications, such as high-temperature electronics. However, there are still issues regarding the stability and reliability of WBG devices. Of particular importance is the high-temperature stability of interconnects for electronic systems based on WBG-semiconductors. For metallization without proper encapsulation, morphological degradation can occur at elevated temperatures. Sandwiching Ag films between Ta and/or TaN layers in this study is found to be electrically and morphologically stabilize the Ag metallization up to 800 °C, compared to 600 °C for uncapped films. However, the barrier layer plays a key role and TaN is found to be superior to Ta, resulting in the best achieved stability, whereas the difference between Ta and TaN caps is negligible. The β-to-α phase transition in the underlying Ta barrier layer is identified as the major cause responsible for the morphological instability observed above 600 °C. It is shown that this phase transition can be avoided using a stacked Ta/TaN barrier.

  10. Laboratory-based observations of capillary barriers and preferential flow in layered snow

    NASA Astrophysics Data System (ADS)

    Avanzi, F.; Hirashima, H.; Yamaguchi, S.; Katsushima, T.; De Michele, C.

    2015-12-01

    Several evidences are nowadays available that show how the effects of capillary gradients and preferential flow on water transmission in snow may play a more important role than expected. To observe these processes and to contribute in their characterization, we performed observations on the development of capillary barriers and preferential flow patterns in layered snow during cold laboratory experiments. We considered three different layering (all characterized by a finer-over-coarser texture in grain size) and three different water input rates. Nine samples of layered snow were sieved in a cold laboratory, and subjected to a constant supply of dyed tracer. By means of visual inspection, horizontal sectioning and liquid water content measurements, the processes of ponding and preferential flow were characterized as a function of texture and water input rate. The dynamics of each sample were replicated using the multi-layer physically-based SNOWPACK model. Results show that capillary barriers and preferential flow are relevant processes ruling the speed of liquid water in stratified snow. Ponding is associated with peaks in LWC at the boundary between the two layers equal to ~ 33-36 vol. % when the upper layer is composed by fine snow (grain size smaller than 0.5 mm). The thickness of the ponding layer at the textural boundary is between 0 and 3 cm, depending on sample stratigraphy. Heterogeneity in water transmission increases with grain size, while we do not observe any clear dependency on water input rate. The extensive comparison between observed and simulated LWC profiles by SNOWPACK (using an approximation of Richards Equation) shows high performances by the model in estimating the LWC peak over the boundary, while water speed in snow is underestimated by the chosen water transport scheme.

  11. In2O3 nanocrystal memory with the barrier engineered tunnel layer.

    PubMed

    Lee, Dong Uk; Kim, Seon Pil; Han, Dong Seok; Kim, Eun Kyu; Park, Goon-Ho; Cho, Won-Ju; Kim, Young-Ho

    2011-01-01

    In2O3 nanocrystal memories with barrier-engineered tunnel layers were fabricated on a p-type Si substrate. The structure and thickness of the barrier-engineered tunnel layers were SiO2/Si3N4/SiO2 (ONO) and 2/2/3 nm, respectively. The equivalent oxide thickness of the ONO tunnel layers was 5.64 nm. The average size and density of the In2O3 nanocrystals after the reaction between BPDA-PDA polyimide and the In thin film were about 8 nm and 4 x 10(11) cm(-2), respectively. The electrons were charged from the channel of the memory device to the quantum well of the In2O3 nanocrystal through the ONO tunnel layer via Fowler-Nordheim tunneling. The memory window was about 1.4 V when the program and erase conditions of the In2O3 nanocrystal memory device were 12 V for 1 s and -15 V for 200 ms.

  12. Characterization of the dark current of a quantum well infrared photodetector (QWIP) with selectively doped barrier layers

    NASA Astrophysics Data System (ADS)

    Uchiyama, Yasuhito; Nishino, Hironori; Matsukura, Yusuke; Miyatake, Tetsuya; Yamamoto, Kousaku; Fujii, Toshio

    2002-08-01

    We investigated the behavior of the dark current (Id) in quantum well infrared photodetectors (QWIPs) in which the barrier layers were selectively doped instead of the well layers. Because the selective doping bends the conduction band (CB) edge in the portion of the barrier near the interface, the mechanism by which carriers in the wells can be emitted over the barriers, i.e. thermal emission and tunneling through this portion of the barrier, could be emphasized. We first confirmed that selectively doping the barrier layers clearly affects the Id-V characteristics. Then, by evaluating the activation energy obtained from the temperature dependence of Id, we found that the Poole-Frenkel emission (PFE) mechanism and the thermal-assisted tunneling (TAT)-like mechanism are dominant in the lower bias and higher bias regions, respectively.

  13. Performance improvement of AlGaN-based deep-ultraviolet light-emitting diodes via asymmetric step-like AlGaN quantum wells

    NASA Astrophysics Data System (ADS)

    Lu, Lin; Wan, Zhi; Xu, FuJun; Wang, XinQiang; Lv, Chen; Shen, Bo; Jiang, Ming; Chen, QiGong

    2017-04-01

    Characteristics of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) with light-emitting wavelength around 265 nm via step-like AlGaN quantum wells (QWs) have been investigated. Simulation approach yields a result that, there is significant enhancement of light output power (LOP) for DUV-LEDs with two-layer step-like AlGaN QWs compared to that with conventional one. The location and thickness of AlGaN layer with higher Al-content in the step-like QWs are confirmed to significantly affect the distributions and overlap of electron and hole wavefunctions. The best material characteristic is obtained when the step-like QW is designed as an asymmetric structure, such as Al0.74Ga0.26N (1.8 nm)/Al0.64Ga0.36N (1.2 nm), where AlGaN with higher Al-content layer is set to be located nearer from n-side and be thick as far as possible. The key factors for the performance improvements for this specific design is the enhanced hole transport and mitigated auger recombination.

  14. Ultrathin epitaxial barrier layer to avoid thermally induced phase transformation in oxide heterostructures

    SciTech Connect

    Baek, David J.; Lu, Di; Hikita, Yasuyuki; Hwang, Harold Y.; Kourkoutis, Lena F.

    2016-12-22

    Incorporating oxides with radically different physical and chemical properties into heterostructures offers tantalizing possibilities to derive new functions and structures. Recently, we have fabricated freestanding 2D oxide membranes using the water-soluble perovskite Sr3Al2O6 as a sacrificial buffer layer. Here, with atomic-resolution spectroscopic imaging, we observe that direct growth of oxide thin films on Sr3Al2O6 can cause complete phase transformation of the buffer layer, rendering it water-insoluble. More importantly, we demonstrate that an ultrathin SrTiO3 layer can be employed as an effective barrier to preserve Sr3Al2O6 during subsequent growth, thus allowing its integration in a wider range of oxide heterostructures.

  15. Ultrathin epitaxial barrier layer to avoid thermally induced phase transformation in oxide heterostructures

    DOE PAGES

    Baek, David J.; Lu, Di; Hikita, Yasuyuki; ...

    2016-12-22

    Incorporating oxides with radically different physical and chemical properties into heterostructures offers tantalizing possibilities to derive new functions and structures. Recently, we have fabricated freestanding 2D oxide membranes using the water-soluble perovskite Sr3Al2O6 as a sacrificial buffer layer. Here, with atomic-resolution spectroscopic imaging, we observe that direct growth of oxide thin films on Sr3Al2O6 can cause complete phase transformation of the buffer layer, rendering it water-insoluble. More importantly, we demonstrate that an ultrathin SrTiO3 layer can be employed as an effective barrier to preserve Sr3Al2O6 during subsequent growth, thus allowing its integration in a wider range of oxide heterostructures.

  16. Significance of thermal contact resistance in two-layer thermal-barrier-coated turbine vanes

    NASA Technical Reports Server (NTRS)

    Liebert, C. H.; Gaugler, R. E.

    1980-01-01

    The importance of thermal contact resistance between layers in heat transfer through two layer, plasma sprayed, thermal barrier coatings applied to turbine vanes was investigated. Results obtained with a system of NiCrAlY bond and yttria stabilized zirconia ceramic show that thermal contact resistance between layers is negligible. These results also verified other studies which showed that thermal contact resistance is negligible for a different coating system of NiCr bond calcia stabilized zirconia ceramic. The zirconia stabilized ceramic thermal conductivity data scatter presented in the literature is ?20 to -10 percent about a curve fit of the data. More accurate predictions of heat transfer and metal wall temperatures are obtained when the thermal conductivity values are used at the ?20 percent level.

  17. Improvement in mechanical and barrier properties of polyethylene blown films using atomic layer deposition

    SciTech Connect

    Lee, Gyeong Beom; Hak Song, Seung; Wook Moon, Sung; Woo Kim, Jun; Hyung Shim, Joon; Choi, Byoung-Ho; Moo Heo, Young

    2014-01-15

    Recently, thin films deposited on polymer substrates have been widely utilized as encapsulation barriers in electronic applications such as flexible displays, packaging films, and organic light-emitting diodes. The barrier and mechanical properties of these films are critical aspects when using them for protecting the inner modules of electronic devices from environmental factors such as moisture, oxygen, and sunlight. In particular, polymers can be degraded or decomposed more easily than other materials under such environmental conditions. Therefore, polymer films can be deposited using thin functional materials; however, suitable deposition methods for polymers are scarce owing to many limitations such as low melting/glass transition temperature, thermal degradation, and oxidation. In this study, a thin alumina oxide film was deposited on a high-density polyethylene blown film by using atomic layer deposition. The mechanical and barrier properties of the alumina oxide film deposited on the polyethylene film were characterized by a microtensile test and water vapor transmission rate test. Process conditions such as process temperature, plasma surface treatment, and number of cycles were varied to ascertain the reliability of the thin alumina oxide film deposited on the high-density polyethylene blown film. The results showed that the barrier property of the deposited film improved upon the application of plasma surface treatment, and that its mechanical properties varied under different process conditions.

  18. Intermediate type excitons in Schottky barriers of A3B6 layer semiconductors and UV photodetectors

    NASA Astrophysics Data System (ADS)

    Alekperov, O. Z.; Guseinov, N. M.; Nadjafov, A. I.

    2006-09-01

    Photoelectric and photovoltaic spectra of Schottky barrier (SB) structures of InSe, GaSe and GaS layered semiconductors (LS) are investigated at quantum energies from the band edge excitons of corresponding materials up to 6.5eV. Spectral dependences of photoconductivity (PC) of photo resistors and barrier structures are strongly different at the quantum energies corresponding to the intermediate type excitons (ITE) observed in these semiconductors. It was suggested that high UV photoconductivity of A3B6 LS is due to existence of high mobility light carriers in the depth of the band structure. It is shown that SB of semitransparent Au-InSe is high sensitive photo detector in UV region of spectra.

  19. Barrier enhancement of Ge MSM IR photodetector with Ge layer optimization

    NASA Astrophysics Data System (ADS)

    Asar, Tarık; Özçelik, Süleyman

    2015-12-01

    Germanium thin films were deposited on n-type Silicon substrates with three different sputter power by using DC magnetron sputtering system at room temperature. The structural and morphological properties of the samples have been obtained by means of X-ray diffraction and atomic force microscopy measurements. Then, Germanium metal-semiconductor-metal infrared photodetectors were fabricated on these structures. The carrier recombination lifetime and the diffusion length of the devices were also calculated by using the carrier density and mobility data was obtained from the room temperature Hall Effect measurements. The dark current-voltage measurements of devices were achieved at room temperature. The electrical parameters such as ideality factor, Schottky barrier height, saturation current and series resistance were extracted from dark current-voltage characteristics. Finally, it has been shown that the barrier enhancement of Ge MSM IR photodetector can be achieved by Ge layer optimization.

  20. Properties of barrier contacts with nanosize TiB{sub x} layers to InP

    SciTech Connect

    Arsentyev, I. N. Bobyl, A. V.; Tarasov, I. S.; Boltovets, N. S. Ivanov, V. N.; Belyaev, A. E.; Kamalov, A. B.; Konakova, R. V. Kudryk, Ya. Ya.; Lytvyn, O. S.; Milenin, V. V.; Russu, E. V.

    2008-07-15

    Structural and electrical properties of Au-TiB{sub x}-nn{sup +}n{sup ++}-InP and TiB{sub x}-nn{sup +}n{sup ++}-InP multilayer barrier structures on standard ('rigid') and soft ('porous')n{sup ++}-InP substrates have been studied, with the semiconductor layers deposited by vapor-phase epitaxy, metallic layers formed by magnetron sputtering, and porous substrates fabricated by electrochemical etching of the standard InP. Samples on porous substrates have the following advantages: leakage currents in their reverse current-voltage characteristics are ten times lower; the range of the exponential rise in current in the forward characteristics is an order of magnitude wider; the changes in the ideality factor and the Schottky barrier height, observed as the contact area varies by a factor of 100, are three and {approx}10 times smaller, respectively; and the structure of the layers is more stable in annealing at up to 800{sup o}C.

  1. Surface-barrier photoconverters with graded-gap layers in the space-charge region

    SciTech Connect

    Bobrenko, Yu. N.; Pavelets, S. Yu. Pavelets, A. M.; Semikina, T. V.; Yaroshenko, N. V.

    2015-04-15

    A novel possibility of controlling the parameters of p-Cu{sub 1.8}S-n-II-VI surface-barrier structures by embedding a thin graded-gap layer into a photoconverter space-charge region (SCR) is implemented. The feature of quasi-electric fields built in the SCR, i.e., the fact that an increase in the drift field for minority carriers can be accompanied by a decrease in the potential barrier for majority carriers, is considered. The proper choice of the parameters of the Cd{sub x}Zn{sub 1−x}S graded-gap layer embedded in the Cu{sub 1.8}S-ZnS structure SCR made it possible to double the quantum efficiency in the ultraviolet spectral region. For Cu{sub 1.8}S-CdS photoconverters with a (CdS){sub x}(ZnSe){sub 1−x} intermediate layer, dark diode currents are decreased by three orders of magnitude while retaining a high quantum efficiency.

  2. Development of ultraviolet electroabsorption modulators and light emitting diodes based on AlGaN alloys

    NASA Astrophysics Data System (ADS)

    Kao, Chen-Kai

    The research in this dissertation addressed the development of ultraviolet (UV) electroabsorption modulators and ultraviolet light emitting diodes (UV-LEDs), covering the spectral range from 360 to 265 nm. The materials system for both types of devices is the AlGaN alloys, either in bulk or quantum well (QW) form, grown by plasma-assisted molecular beam epitaxy (MBE). Potential applications of these devices either individually or in combination include UV non-line-of-sight free-space-optical communications, UV sensing and spectroscopic systems, Q-switched pulsed lasers, water/air purification and various medical applications. Optical modulators based on cubic III-V semiconductors have been the subject of extensive research over the past several years. Such devices are typically based on the quantum-confined Stark effect to modify the absorption spectrum of multiple-quantum-well active regions. On the other hand, in wurtzite III-Nitride semiconductors, strong electric fields are already present in the quantum wells due to intrinsic and piezoelectric polarizations; as a result, an even greater change in absorption is achievable, especially if the internal fields are compensated by the external bias so that the net field in the quantum wells is reduced. A number of UV electroabsorption modulators based on Schottky barriers on bulk GaN and GaN /AlGaN multiple quantum wells (MQWs) were designed, fabricated and characterized. Record modulation ratio of 30 % was obtained from bulk GaN Schottky barrier modulators at the excitonic resonant energy of 3.45 eV (360 nm) upon the application of 12 V reverse bias. Similarly, record modulation ratio of 43% was obtained from GaN / AlGaN MQWs Schottky barrier modulators at the excitonic resonant energy of 3.48 eV (356 nm) upon the application of 17 V reverse bias. The external quantum efficiency (EQE) of AlGaN based deep UV LEDS is relatively low (˜1% at 270 nm). This is generally attributed to the poor internal quantum efficiency

  3. Fabrication of metallic single electron transistors featuring plasma enhanced atomic layer deposition of tunnel barriers

    NASA Astrophysics Data System (ADS)

    Karbasian, Golnaz

    The continuing increase of the device density in integrated circuits (ICs) gives rise to the high level of power that is dissipated per unit area and consequently a high temperature in the circuits. Since temperature affects the performance and reliability of the circuits, minimization of the energy consumption in logic devices is now the center of attention. According to the International Technology Roadmaps for Semiconductors (ITRS), single electron transistors (SETs) hold the promise of achieving the lowest power of any known logic device, as low as 1x10-18 J per switching event. Moreover, SETs are the most sensitive electrometers to date, and are capable of detecting a fraction of an electron charge. Despite their low power consumption and high sensitivity for charge detection, room temperature operation of these devices is quite challenging mainly due to lithographical constraints in fabricating structures with the required dimensions of less than 10 nm. Silicon based SETs have been reported to operate at room temperature. However, they all suffer from significant variation in batch-to-batch performance, low fabrication yield, and temperature-dependent tunnel barrier height. In this project, we explored the fabrication of SETs featuring metal-insulator-metal (MIM) tunnel junctions. While Si-based SETs suffer from undesirable effect of dopants that result in irregularities in the device behavior, in metal-based SETs the device components (tunnel barrier, island, and the leads) are well-defined. Therefore, metal SETs are potentially more predictable in behavior, making them easier to incorporate into circuits, and easier to check against theoretical models. Here, the proposed fabrication method takes advantage of unique properties of chemical mechanical polishing (CMP) and plasma enhanced atomic layer deposition (PEALD). Chemical mechanical polishing provides a path for tuning the dimensions of the tunnel junctions, surpassing the limits imposed by electron beam

  4. Inverted vertical algan deep ultraviolet leds grown on p-SiC substrates by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Nothern, Denis Maurice

    Deep ultraviolet light emitting diodes (UV LEDs) are an important emerging technology for a number of applications such as water/air/surface disinfection, communications, and epoxy curing. However, as of yet, deep UV LEDs grown on sapphire substrates are neither efficient enough nor powerful enough to fully serve these and other potential applications. The majority of UV LEDs reported so far in the literature are grown on sapphire substrates and their design consists of AlGaN quantum wells (QWs) embedded in an AlGaN p-i-n junction with the n-type layer on the sapphire. These devices suffer from a high concentration of threading defects originating from the large lattice mismatch between the sapphire substrate and AlGaN alloys. Other issues include the poor doping efficiency of the n- and particularly the p-AlGaN alloys, the extraction of light through the sapphire substrate, and the heat dissipation through the thermally insulating sapphire substrate. These problems have historically limited the internal quantum efficiency (IQE), injection efficiency (IE), and light extraction efficiency (EE) of devices. As a means of addressing these efficiency and power challenges, I have contributed to the development of a novel inverted vertical deep UV LED design based on AlGaN grown on p-SiC substrates. Starting with a p-SiC substrate that serves as the p-type side of the p-i-n junction largely eliminates the necessity for the notoriously difficult p-type doping of AlGaN alloys, and allows for efficient heat dissipation through the highly thermally conductive SiC substrate. UV light absorption in the SiC substrate can be addressed by first growing p-type doped distributed Bragg reflectors (DBRs) on top of the substrate prior to the deposition of the active region of the device. A number of n-AlGaN films, AlGaN/AlGaN multiple quantum wells, and p-type doped AlGaN DBRs were grown by molecular beam epitaxy (MBE). These were characterized in situ by reflected high energy electron

  5. CONDENSED MATTER: STRUCTURE, THERMAL AND MECHANICAL PROPERTIES: The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates

    NASA Astrophysics Data System (ADS)

    Wu, Yu-Xin; Zhu, Jian-Jun; Zhao, De-Gang; Liu, Zong-Shun; Jiang, De-Sheng; Zhang, Shu-Ming; Wang, Yu-Tian; Wang, Hui; Chen, Gui-Feng; Yang, Hui

    2009-10-01

    High-quality and nearly crack-free GaN epitaxial layer was obtained by inserting a single AlGaN interlayer between GaN epilayer and high-temperature AlN buffer layer on Si (111) substrate by metalorganic chemical vapor deposition. This paper investigates the effect of AlGaN interlayer on the structural properties of the resulting GaN epilayer. It confirms from the optical microscopy and Raman scattering spectroscopy that the AlGaN interlayer has a remarkable effect on introducing relative compressive strain to the top GaN layer and preventing the formation of cracks. X-ray diffraction and transmission electron microscopy analysis reveal that a significant reduction in both screw and edge threading dislocations is achieved in GaN epilayer by the insertion of AlGaN interlayer. The process of threading dislocation reduction in both AlGaN interlayer and GaN epilayer is demonstrated.

  6. The explanation of barrier height inhomogeneities in Au/n-Si Schottky barrier diodes with organic thin interfacial layer

    NASA Astrophysics Data System (ADS)

    Taşçıoǧlu, Ilke; Aydemir, Umut; Altındal, Şemsettin

    2010-09-01

    The forward bias current-voltage (I-V) characteristics of Au/n-Si Schottky barrier diodes (SBDs) with Zn doped poly(vinyl alcohol) (PVA:Zn) interfacial layer have been investigated in the wide temperature range of 80-400 K. The conventional Richardson plot of the ln(Io/T2) versus q /kT has two linear regions: the first region (200-400 K) and the second region (80-170 K). The values of activation energy (Ea) and Richardson constant (A∗) were obtained from this plot and especially the values of A∗ are much lower than the known theoretical value for n-type Si. Also the value of Ea is almost equal to the half of the band gap energy of Si. Therefore, the Φap versus q /2kT plot was drawn to obtain the evidence of a Gaussian distribution (GD) of barrier heights (BHs) and it shows two linear region similar to ln(Io)/T2 versus q /kT plot. The analysis of I-V data based on thermionic emission of the Au/PVA:Zn/n-Si SBDs has revealed the existence of double GD with mean BH values (Φ¯B0) of 1.06 eV and 0.86 eV with standard deviation (σ ) of 0.110 eV and 0.087 V, respectively. Thus, we modified ln(Io/T2)-(qσ)2/2(kT)2 versus q /kT plot for two temperature regions (200-400 K and 80-170 K) and it gives renewed mean BHs Φ¯B0 values as 1.06 eV and 0.85 eV with Richardson constant (A∗) values 121 A/cm2 K2 and 80.4 A/cm2 K2, respectively. This obtained value of A∗=121 A/cm2 K2 is very close to the known theoretical value of 120 A/cm2 K2 for n-type Si.

  7. Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition

    SciTech Connect

    Hoffmann, Lukas Theirich, Detlef; Hasselmann, Tim; Räupke, André; Schlamm, Daniel; Riedl, Thomas

    2016-01-15

    This paper reports on aluminum oxide (Al{sub 2}O{sub 3}) thin film gas permeation barriers fabricated by atmospheric pressure atomic layer deposition (APPALD) using trimethylaluminum and an Ar/O{sub 2} plasma at moderate temperatures of 80 °C in a flow reactor. The authors demonstrate the ALD growth characteristics of Al{sub 2}O{sub 3} films on silicon and indium tin oxide coated polyethylene terephthalate. The properties of the APPALD-grown layers (refractive index, density, etc.) are compared to that deposited by conventional thermal ALD at low pressures. The films films deposited at atmospheric pressure show water vapor transmission rates as low as 5 × 10{sup −5} gm{sup −2}d{sup −1}.

  8. A three-terminal ultraviolet photodetector constructed on a barrier-modulated triple-layer architecture

    PubMed Central

    Ye, Daqian; Mei, Zengxia; Liang, Huili; liu, Lishu; Zhang, Yonghui; Li, Junqiang; Liu, Yaoping; Gu, Changzhi; Du, Xiaolong

    2016-01-01

    We report a novel three-terminal device fabricated on MgZnO/ZnO/MgZnO triple-layer architecture. Because of the combined barrier modulation effect by both gate and drain biases, the device shows an unconventional I–V characteristics compared to a common field effect transistor. The photoresponse behavior of this unique device was also investigated and applied in constructing a new type ultraviolet (UV) photodetector, which may be potentially used as an active element in a UV imaging array. More significantly, the proper gate bias-control offers a new pathway to overcome the common persistent photoconductivity (PPC) effect problem. Additionally, the MgZnO:F as a channel layer was chosen to optimize the photoresponse properties, and the spectrum indicated a gate bias-dependent wavelength-selectable feature for different response peaks, which suggests the possibility to build a unique dual-band UV photodetector with this new architecture. PMID:27181255

  9. A finite difference analysis of the field present behind an acoustically impenetrable two-layer barrier.

    PubMed

    Hurrell, Andrew M

    2008-06-01

    The interaction of an incident sound wave with an acoustically impenetrable two-layer barrier is considered. Of particular interest is the presence of several acoustic wave components in the shadow region of this barrier. A finite difference model capable of simulating this geometry is validated by comparison to the analytical solution for an idealized, hard-soft barrier. A panel comprising a high air-content closed cell foam backed with an elastic (metal) back plate is then examined. The insertion loss of this panel was found to exceed the dynamic range of the measurement system and was thus acoustically impenetrable. Experimental results from such a panel are shown to contain artifacts not present in the diffraction solution, when acoustic waves are incident upon the soft surface. A finite difference analysis of this experimental configuration replicates the presence of the additional field components. Furthermore, the simulated results allow the additional components to be identified as arising from the S(0) and A(0) Lamb modes traveling in the elastic plate. These Lamb mode artifacts are not found to be present in the shadow region when the acoustic waves are incident upon the elastic surface.

  10. Ultrathin, transferred layers of thermally grown silicon dioxide as biofluid barriers for biointegrated flexible electronic systems

    PubMed Central

    Fang, Hui; Yu, Ki Jun; Song, Enming; Farimani, Amir Barati; Chiang, Chia-Han; Jin, Xin; Xu, Dong; Du, Wenbo; Seo, Kyung Jin; Zhong, Yiding; Yang, Zijian; Won, Sang Min; Fang, Guanhua; Choi, Seo Woo; Chaudhuri, Santanu; Huang, Yonggang; Alam, Muhammad Ashraful; Viventi, Jonathan; Aluru, N. R.; Rogers, John A.

    2016-01-01

    Materials that can serve as long-lived barriers to biofluids are essential to the development of any type of chronic electronic implant. Devices such as cardiac pacemakers and cochlear implants use bulk metal or ceramic packages as hermetic enclosures for the electronics. Emerging classes of flexible, biointegrated electronic systems demand similar levels of isolation from biofluids but with thin, compliant films that can simultaneously serve as biointerfaces for sensing and/or actuation while in contact with the soft, curved, and moving surfaces of target organs. This paper introduces a solution to this materials challenge that combines (i) ultrathin, pristine layers of silicon dioxide (SiO2) thermally grown on device-grade silicon wafers, and (ii) processing schemes that allow integration of these materials onto flexible electronic platforms. Accelerated lifetime tests suggest robust barrier characteristics on timescales that approach 70 y, in layers that are sufficiently thin (less than 1 μm) to avoid significant compromises in mechanical flexibility or in electrical interface fidelity. Detailed studies of temperature- and thickness-dependent electrical and physical properties reveal the key characteristics. Molecular simulations highlight essential aspects of the chemistry that governs interactions between the SiO2 and surrounding water. Examples of use with passive and active components in high-performance flexible electronic devices suggest broad utility in advanced chronic implants. PMID:27791052

  11. Ultrathin, transferred layers of thermally grown silicon dioxide as biofluid barriers for biointegrated flexible electronic systems.

    PubMed

    Fang, Hui; Zhao, Jianing; Yu, Ki Jun; Song, Enming; Farimani, Amir Barati; Chiang, Chia-Han; Jin, Xin; Xue, Yeguang; Xu, Dong; Du, Wenbo; Seo, Kyung Jin; Zhong, Yiding; Yang, Zijian; Won, Sang Min; Fang, Guanhua; Choi, Seo Woo; Chaudhuri, Santanu; Huang, Yonggang; Alam, Muhammad Ashraful; Viventi, Jonathan; Aluru, N R; Rogers, John A

    2016-10-18

    Materials that can serve as long-lived barriers to biofluids are essential to the development of any type of chronic electronic implant. Devices such as cardiac pacemakers and cochlear implants use bulk metal or ceramic packages as hermetic enclosures for the electronics. Emerging classes of flexible, biointegrated electronic systems demand similar levels of isolation from biofluids but with thin, compliant films that can simultaneously serve as biointerfaces for sensing and/or actuation while in contact with the soft, curved, and moving surfaces of target organs. This paper introduces a solution to this materials challenge that combines (i) ultrathin, pristine layers of silicon dioxide (SiO2) thermally grown on device-grade silicon wafers, and (ii) processing schemes that allow integration of these materials onto flexible electronic platforms. Accelerated lifetime tests suggest robust barrier characteristics on timescales that approach 70 y, in layers that are sufficiently thin (less than 1 μm) to avoid significant compromises in mechanical flexibility or in electrical interface fidelity. Detailed studies of temperature- and thickness-dependent electrical and physical properties reveal the key characteristics. Molecular simulations highlight essential aspects of the chemistry that governs interactions between the SiO2 and surrounding water. Examples of use with passive and active components in high-performance flexible electronic devices suggest broad utility in advanced chronic implants.

  12. Effectiveness of compacted soil liner as a gas barrier layer in the landfill final cover system.

    PubMed

    Moon, Seheum; Nam, Kyoungphile; Kim, Jae Young; Hwan, Shim Kyu; Chung, Moonkyung

    2008-01-01

    A compacted soil liner (CSL) has been widely used as a single barrier layer or a part of composite barrier layer in the landfill final cover system to prevent water infiltration into solid wastes for its acceptable hydraulic permeability. This study was conducted to test whether the CSL was also effective in prohibiting landfill gas emissions. For this purpose, three different compaction methods (i.e., reduced, standard, and modified Proctor methods) were used to prepare the soil specimens, with nitrogen as gas, and with water and heptane as liquid permeants. Measured gas permeability ranged from 2.03 x 10(-10) to 4.96 x 10(-9) cm(2), which was a magnitude of two or three orders greater than hydraulic permeability (9.60 x 10(-13) to 1.05 x 10(-11) cm(2)). The difference between gas and hydraulic permeabilities can be explained by gas slippage, which makes gas more permeable, and by soil-water interaction, which impedes water flow and then makes water less permeable. This explanation was also supported by the result that a liquid permeability measured with heptane as a non-polar liquid was similar to the intrinsic gas permeability. The data demonstrate that hydraulic requirement for the CSL is not enough to control the gas emissions from a landfill.

  13. Ultrathin, transferred layers of thermally grown silicon dioxide as biofluid barriers for biointegrated flexible electronic systems

    NASA Astrophysics Data System (ADS)

    Fang, Hui; Zhao, Jianing; Yu, Ki Jun; Song, Enming; Barati Farimani, Amir; Chiang, Chia-Han; Jin, Xin; Xue, Yeguang; Xu, Dong; Du, Wenbo; Seo, Kyung Jin; Zhong, Yiding; Yang, Zijian; Won, Sang Min; Fang, Guanhua; Choi, Seo Woo; Chaudhuri, Santanu; Huang, Yonggang; Ashraful Alam, Muhammad; Viventi, Jonathan; Aluru, N. R.; Rogers, John A.

    2016-10-01

    Materials that can serve as long-lived barriers to biofluids are essential to the development of any type of chronic electronic implant. Devices such as cardiac pacemakers and cochlear implants use bulk metal or ceramic packages as hermetic enclosures for the electronics. Emerging classes of flexible, biointegrated electronic systems demand similar levels of isolation from biofluids but with thin, compliant films that can simultaneously serve as biointerfaces for sensing and/or actuation while in contact with the soft, curved, and moving surfaces of target organs. This paper introduces a solution to this materials challenge that combines (i) ultrathin, pristine layers of silicon dioxide (SiO2) thermally grown on device-grade silicon wafers, and (ii) processing schemes that allow integration of these materials onto flexible electronic platforms. Accelerated lifetime tests suggest robust barrier characteristics on timescales that approach 70 y, in layers that are sufficiently thin (less than 1 μm) to avoid significant compromises in mechanical flexibility or in electrical interface fidelity. Detailed studies of temperature- and thickness-dependent electrical and physical properties reveal the key characteristics. Molecular simulations highlight essential aspects of the chemistry that governs interactions between the SiO2 and surrounding water. Examples of use with passive and active components in high-performance flexible electronic devices suggest broad utility in advanced chronic implants.

  14. Response of upper ocean and impact of barrier layer on Sidr cyclone induced sea surface cooling

    NASA Astrophysics Data System (ADS)

    Vissa, Naresh Krishna; Satyanarayana, A. N. V.; Kumar, B. Prasad

    2013-09-01

    In the present study an attempt has been made to investigate the impact of salinity stratification on the SST during the tropical cyclone (TC) passage. In this context, a severe post monsoon cyclone, Sidr, (Category 4) that developed over the south-eastern Bay of Bengal (BoB) during 11-16 November, 2007 was chosen as a case study. Pre-existence of a thick barrier layer (BL), temperature inversions and a higher effective oceanic layer for cyclogenesis (EOLC) were noticed along the path of the Sidr cyclone. The analysis of available Argo floats along the Sidr cyclone track also revealed less cooling during as well as after its passage as was reported from satellite derived SST. The role of BL on Sidr induced sea surface cooling was investigated using a diagnostic mixed layer model. Model results also depict the reduced sea surface cooling during the passage of Sidr. This is attributed to the presence of BL which results in the inhibition of the entrainment of cool thermocline water into the shallow mixed layer. Climatological as well as in situ observations of tropical cyclone heat potential (TCHP) and EOLC shows that the Sidr cyclone propagated towards the regions of higher EOLC.

  15. Atomic and electronic structure of ultrathin fluoride barrier layers at the oxide/Si interface

    NASA Astrophysics Data System (ADS)

    Pasquali, L.; Montecchi, M.; Nannarone, S.; Boscherini, F.

    2011-09-01

    A SrF2 ultrathin barrier layer on Si(001) is used to form a sharp interface and block reactivity and intermixing between the semiconductor and a Yb2O3 overlayer. Yb2O3/Si(001) and Yb2O3/SrF2/Si(001) interfaces grown in ultra high vacuum by molecular beam epitaxy are studied by photoemission and x-ray absorption fine structure. Without the fluoride interlayer, Yb2O3/Si(001) presents an interface reacted region formed by SiOx and/or silicate compounds, which is about 9 Å thick and increases up to 14-15 Å after annealing at 500-700 °C. A uniform single layer of SrF2 molecules blocks intermixing and reduces the oxidized Si region to 2.4 Å after deposition and to 3.5 Å after annealing at 500 °C. In both cases we estimate a conduction band offset and a valence band offset of ~ 1.7 eV and 2.4 eV between the oxide and Si, respectively. X-ray absorption fine structure measurements at the Yb LIII edge suggest that the Yb oxide films exhibit a significant degree of static disorder with and without the fluoride barrier. Sr K edge measurements indicate that the ultrathin fluoride films are reacted, with the formation of bonds between Si and Sr; the Sr-Sr and Sr-F interatomic distances in the ultrathin fluoride barrier film are relaxed to the bulk value.

  16. Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells

    SciTech Connect

    Li, Xiaohang E-mail: dupuis@gatech.edu; Xie, Hongen; Ponce, Fernando A.; Ryou, Jae-Hyun; Detchprohm, Theeradetch; Dupuis, Russell D. E-mail: dupuis@gatech.edu

    2015-12-14

    We demonstrated onset of deep-ultraviolet (DUV) surface stimulated emission (SE) from c-plane AlGaN multiple-quantum well (MQW) heterostructures grown on a sapphire substrate by optical pumping at room temperature. The onset of SE became observable at a pumping power density of 630 kW/cm{sup 2}. Spectral deconvolution revealed superposition of a linearly amplified spontaneous emission peak at λ ∼ 257.0 nm with a full width at half maximum (FWHM) of ∼12 nm and a superlinearly amplified SE peak at λ ∼ 260 nm with a narrow FWHM of less than 2 nm. In particular, the wavelength of ∼260 nm is the shortest wavelength of surface SE from III-nitride MQW heterostructures to date. Atomic force microscopy and scanning transmission electron microscopy measurements were employed to investigate the material and structural quality of the AlGaN heterostructures, showing smooth surface and sharp layer interfaces. This study offers promising results for AlGaN heterostructures grown on sapphire substrates for the development of DUV vertical cavity surface emitting lasers (VCSELs)

  17. Enhanced output power of GaN-based LEDs with embedded AlGaN pyramidal shells.

    PubMed

    Tu, Shang-Ju; Sheu, Jinn-Kong; Lee, Ming-Lun; Yang, Chih-Ciao; Chang, Kuo-Hua; Yeh, Yu-Hsiang; Huang, Feng-Wen; Lai, Wei-Chih

    2011-06-20

    In this article, the characteristics of GaN-based LEDs grown on Ar-implanted GaN templates to form inverted Al0.27Ga0.83N pyramidal shells beneath an active layer were investigated. GaN-based epitaxial layers grown on the selective Ar-implanted regions had lower growth rates compared with those grown on the implantation-free regions. This resulted in selective growth, and formation of V-shaped concaves in the epitaxial layers. Accordingly, the inverted Al0.27Ga0.83N pyramidal shells were formed after the Al0.27Ga0.83N and GaN layers were subsequently grown on the V-shaped concaves. The experimental results indicate that the light-output power of LEDs with inverted AlGaN pyramidal shells was higher than those of conventional LEDs. With a 20 mA current injection, the output power was enhanced by 10% when the LEDs were embedded with inverted Al0.27Ga0.83N pyramidal shells. The enhancement in output power was primarily due to the light scattering at the Al0.27Ga0.83N/GaN interface, which leads to a higher escape probability for the photons, that is, light-extraction efficiency. Based on the ray tracing simulation, the output power of LEDs grown on Ar-implanted GaN templates can be enhanced by over 20% compared with the LEDs without the embedded AlGaN pyramidal shells, if the AlGaN layers were replaced by Al0.5Ga0.5N layers.

  18. Effect of a multi-layer infection control barrier on the micro-hardness of a composite resin

    PubMed Central

    HWANG, In-Nam; HONG, Sung-Ok; LEE, Bin-Na; HWANG, Yun-Chan; OH, Won-Mann; CHANG, Hoon-Sang

    2012-01-01

    Objective The aim of this study was to evaluate the effect of multiple layers of an infection control barrier on the micro-hardness of a composite resin. Material and Methods One, two, four, and eight layers of an infection control barrier were used to cover the light guides of a high-power light emitting diode (LED) light curing unit (LCU) and a low-power halogen LCU. The composite specimens were photopolymerized with the LCUs and the barriers, and the micro-hardness of the upper and lower surfaces was measured (n=10). The hardness ratio was calculated by dividing the bottom surface hardness of the experimental groups by the irradiated surface hardness of the control groups. The data was analyzed by two-way ANOVA and Tukey's HSD test. Results The micro-hardness of the composite specimens photopolymerized with the LED LCU decreased significantly in the four- and eight-layer groups of the upper surface and in the two-, four-, and eight-layer groups of the lower surface. The hardness ratio of the composite specimens was <80% in the eight-layer group. The micro-hardness of the composite specimens photopolymerized with the halogen LCU decreased significantly in the eight-layer group of the upper surface and in the two-, four-, and eight-layer groups of the lower surface. However, the hardness ratios of all the composite specimens photopolymerized with barriers were <80%. Conclusions The two-layer infection control barrier could be used on high-power LCUs without decreasing the surface hardness of the composite resin. However, when using an infection control barrier on the low-power LCUs, attention should be paid so as not to sacrifice the polymerization efficiency. PMID:23138746

  19. Sputter Deposition of Yttrium-Barium Superconductor and Strontium Titanium Oxide Barrier Layer Thin Films

    NASA Astrophysics Data System (ADS)

    Truman, James Kelly

    1992-01-01

    The commercial application of superconducting rm YBa_2Cu_3O_{7 -x} thin films requires the development of deposition methods which can be used to reproducibly deposit films with good superconducting properties on insulating and semiconducting substrates. Sputter deposition is the most popular method to fabricate Y-Ba-Cu-O superconductor thin films, but when used in the standard configuration suffers from a deviation between the compositions of the Y-Ba-Cu-O sputter target and deposited films, which is thought to be primarily due to resputtering of the film by negative ions sputtered from the target. In this study, the negative ions were explicitly identified and were found to consist predominantly O^-. The sputter yield of O^- was found to depend on the Ba compound used in the fabrication of Y -Ba-Cu-O targets and was related to the electronegativity difference between the components. An unreacted mixture of rm Y_2O_3, CuO, and BaF_2 was found to have the lowest O^- yield among targets with Y:Ba:Cu = 1:2:3. The high yield of O^- from rm YBa_2Cu_3O _{7-x} was found to depend on the target temperature and be due to the excess oxygen present. The SIMS negative ion data supported the composition data for sputter-deposited Y-Ba-Cu-O films. Targets using BaF _2 were found to improve the Ba deficiency, the run-to-run irreproducibility and the nonuniformity of the film composition typically found in sputtered Y -Ba-Cu-O films. Superconducting Y-Ba-Cu-O films were formed on SrTiO_3 substrates by post-deposition heat treatment of Y-Ba-Cu-O-F films in humid oxygen. The growth of superconducting rm YBa_2Cu_3O_{7-x}, thin films on common substrates such as sapphire or silicon requires the use of a barrier layer to prevent the deleterious interaction which occurs between Y-Ba-Cu-O films and these substrates. Barrier layers of SrTiO_3 were studied and found to exhibit textured growth with a preferred (111) orientation on (100) Si substrates. However, SrTiO_3 was found to be

  20. Gas Diffusion Barriers Using Atomic Layer Deposition: A New Calcium Test and Polymer Substrate Effects

    NASA Astrophysics Data System (ADS)

    Bertrand, Jacob Andrew

    The increasing demand on available energy resources has led to a desire for more energy efficient devices. The wide use of displays in consumer electronics, such as televisions, cell phones, cameras and computers makes them an ideal target for improvement. Organic light-emitting diodes (OLEDs) are a good candidate to replace traditional Si based devices. However, the low work function metals typically used as electrodes in OLEDs are very reactive with water and oxygen. Ultralow permeability gas diffusion barriers with water vapor transmission rates (WVTRs) as low as <10-6g/(m2*day) are required on the polymers used to fabricate organic electronic and thin film photovoltaic devices. Atomic Layer Deposition (ALD) uses self-limiting surface reactions to deposit thin conformal films. ALD is capable of depositing thin, conformal, high quality barriers. WVTR values as low as ˜5 x 10-5 g/(m2*day) have been measured for Al2O3 ALD films at 38 °C/85% RH using the Ca test with optical transmission probing. The Ca test is a technique with very high sensitivity to measure ultralow WVTRs. This test relies on measuring the oxidation of a Ca metal film by monitoring the change in its optical or electrical properties. However, glass lid control experiments have indicated that the WVTRs measured by the Ca test are limited by H2O permeability through the epoxy seals. Varying results have been reported in the literature using the electrical conductance of Ca to measure permeation. In this work, two approaches were applied to overcome the epoxy edge seal limitations. The first approach was to deposit Al2O 3 ALD barriers directly on Ca metal. While the Al 2O3 ALD barriers were successfully deposited, the measurement of an accurate WVTR was limited by barrier pinholes. The presence of pinholes in the Al2O3 ALD barrier on Ca results in the localized oxidation of the Ca sensor. Heterogeneous degradation of the Ca causes inaccuracies in the conductance of the film. As oxidation regions

  1. All high T sub c edge-geometry weak links utilizing Y-Ba-Cu-O barrier layers

    SciTech Connect

    Hunt, B.D.; Foote, M.C.; Bajuk, L.J. )

    1991-08-19

    High quality YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}}/normal-metal/YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} edge-geometry weak links have been fabricated using nonsuperconducting Y-Ba-Cu-O barrier layers deposited by laser ablation at reduced growth temperatures. Devices incorporating 25--100 A thick barrier layers exhibit current-voltage characteristics consistent with the resistively shunted junction model, with strong microwave and magnetic field response at temperatures up to 85 K. The critical currents vary exponentially with barrier thickness, and the resistances scale linearly with Y-Ba-Cu-O interlayer thickness and device area, indicating good barrier uniformity, with an effective normal metal coherence length of 20 A.

  2. Multi-layered ruthenium-containing bond coats for thermal barrier coatings

    NASA Astrophysics Data System (ADS)

    Tryon, Brian S.

    Advances in thermal barrier coating (TBC) technology for Ni-base superalloys have shown that B2 Pt-modified NiAl-based bond coatings outperform conventional NiAl bond coat layers for high temperature TBC multilayer systems. This thesis addresses the potential improvement in the high temperature capability of a 132 Ru-modified aluminide bond coat layer due to improved high temperature properties of RuAl over NiAl. The objectives of this research have been to define a processing path for fabrication of a multi-layered Ru-modified aluminide bond coating and to investigate its performance within a TBC system. Microstructural development and the oxidation behavior of Ru-modified and Ru/Pt-modified bond coatings have been studied in detail. Two types of Ru-modified bond coatings have been fabricated: one by means of high temperature, low activity chemical vapor deposition (CVD) processing, and one via high temperature, high activity pack-aluminization. The location of the RuAl-rich layer has been shown to be process dependent with a low activity Ru-containing bond coating producing an exterior B2 NiAl layer with an interior B2 RuAl layer and a high activity Ru-containing bond coat producing the reverse arrangement of B2 layers. While all bond coating systems studied offer some oxidation protection by forming alpha-Al2O3, the low activity Ru/Pt-modified bond coatings exhibited a higher resistance to oxidation-induced failure compared to Ru-modified bond coatings. Through 1000 cyclic oxidation exposures, the Ru/Pt-modified coatings with an initial Ru deposition of 3mum are comparable to conventional Pt-modified aluminide coatings. The Ru-Al-Ni ternary system is the basis for Ru-modifed aluminide coating systems. An experimental assessment of the Ru-Al-Ni phase diagram at 1000°C and 1100°C has been produced via a series of diffusion couple experiments. A continuous solid-solution has been shown to exist between the RuAl and NiAl phases in the ternary system at the

  3. Barrier coated drug layered particles for enhanced performance of amorphous solid dispersion dosage form.

    PubMed

    Puri, Vibha; Dantuluri, Ajay K; Bansal, Arvind K

    2012-01-01

    Amorphous solid dispersions (ASDs) may entail tailor-made dosage form design to exploit their solubility advantage. Surface phenomena dominated the performance of amorphous celecoxib solid dispersion (ACSD) comprising of amorphous celecoxib (A-CLB), polyvinylpyrrolidone, and meglumine (7:2:1, w/w). ACSD cohesive interfacial interactions hindered its capsule dosage form dissolution (Puri V, Dhantuluri AK, Bansal AK 2011. J Pharm Sci 100:2460-2468). Furthermore, ACSD underwent significant devitrification under environmental stress. In the present study, enthalpy relaxation studies revealed its free surface to contribute to molecular mobility. Based on all these observations, barrier coated amorphous CLB solid dispersion layered particles (ADLP) were developed by Wurster process, using microcrystalline cellulose as substrate and polyvinyl alcohol (PVA), inulin, and polyvinyl acetate phthalate (PVAP) as coating excipients. Capsule formulations of barrier coated-ADLP could achieve rapid dispersibility and high drug release. Evaluation under varying temperature and RH conditions suggested the crystallization inhibitory efficiency in order of inulin < PVA ≈ PVAP; however, under only temperature treatment, crystallization inhibition increased with increase in T(g) of the coating material. Simulated studies using DSC evidenced drug-polymer mixing at the interface as a potential mechanism for surface stabilization. In conclusion, surface modification yielded a fast dispersing robust high drug load ASD based dosage form.

  4. Enhanced carrier injection in InGaN/GaN multiple quantum wells LED with polarization-induced electron blocking barrier

    NASA Astrophysics Data System (ADS)

    Li, Chengguo; Liu, Hongfei; Chua, Soo Jin

    2016-03-01

    In this report, we designed a light emitting diode (LED) structure in which an N-polar p-GaN layer is grown on top of Ga-polar In0.1Ga0.9N/GaN quantum wells (QWs) on an n-GaN layer. Numerical simulation reveals that the large polarization field at the polarity inversion interface induces a potential barrier in the conduction band, which can block electron overflow out of the QWs. Compared with a conventional LED structure with an Al0.2Ga0.8N electron blocking layer (EBL), the proposed LED structure shows much lower electron current leakage, higher hole injection, and a significant improvement in the internal quantum efficiency (IQE). These results suggest that the polarization induced barrier (PIB) is more effective than the AlGaN EBL in suppressing electron overflow and improving hole transport in GaN-based LEDs.

  5. Design, installation, and performance of a multi-layered permeable reactive barrier, Los Alamos National Laboratory

    SciTech Connect

    Kaszuba, J. P.; Longmire, P. A.; Strietelmeier, E. A.; Taylor, T. P.; Den-Baars, P. S.

    2004-01-01

    A multi-layered permeable reactive barrier (PRB) has been installed in Mortandad Canyon, on the Pajarito Plateau in the north-central part of LANL, to demonstrate in-situ treatment of a suite of contaminants with dissimilar geochemical properties. The PRB will also mitigate possible vulnerabilities from downgradient contaminant movement within alluvial and deeper perched groundwater. Mortandad Canyon was selected as the location for this demonstration project because the flow of alluvial groundwater is constrained by the geology of the canyon, a large network of monitoring wells already were installed along the canyon reach, and the hydrochemistry and contaminant history of the canyon is well-documented. The PRB uses a funnel-and-gate system with a series of four reactive media cells to immobilize or destroy contaminants present in alluvial groundwater, including strontium-90, plutonium-238,239,240, americium-241, perchlorate, and nitrate. The four cells, ordered by sequence of contact with the groundwater, consist of gravel-sized scoria (for colloid removal); phosphate rock containing apatite (for metals and radionuclides); pecan shells and cotton seed admixed with gravel (bio-barrier, to deplete dissolved oxygen and destroy potential RCRA organic compounds, nitrate and perchlorate); and limestone (pH buffering and anion adsorption). Design elements of the PRB are based on laboratory-scale treatability studies and on a field investigation of hydrologic, geochemical, and geotechnical parameters. The PRB was designed with the following criteria: 1-day residence time within the biobarrier, 10-year lifetime, minimization of surface water infiltration and erosion, optimization of hydraulic capture, and minimization of excavated material requiring disposal. Each layer has been equipped with monitoring wells or ports to allow sampling of groundwater and reactive media, and monitor wells are located immediately adjacent to the up- and down-gradient perimeter of the

  6. The effect of surface cleaning on quantum efficiency in AlGaN photocathode

    NASA Astrophysics Data System (ADS)

    Hao, Guanghui; Zhang, Yijun; Jin, Muchun; Feng, Cheng; Chen, Xinlong; Chang, Benkang

    2015-01-01

    To improve the quantum efficiency of AlGaN photocathode, various surfaces cleaning techniques for the removal of alumina and carbon from AlGaN photocathode surface were investigated. The atomic compositions of AlGaN photocathode structure and surface were measured by the X-ray photoelectron spectroscopy and Ar+ ion sputtering. It is found that the boiling KOH solution and the mixture of sulfuric acid and hydrogen peroxide, coupled with the thermal cleaning at 850 °C can effectively remove the alumina and carbon from the AlGaN photocathode surface. The quantum efficiency of AlGaN photocathode is improved to 35.1% at 240 nm, an increase of 50% over the AlGaN photocathode chemically cleaned by only the mixed solution of sulfuric acid and hydrogen peroxide and thermally cleaned at 710 °C.

  7. Ultralow turnoff loss dual-gate SOI LIGBT with trench gate barrier and carrier stored layer

    NASA Astrophysics Data System (ADS)

    He, Yi-Tao; Qiao, Ming; Zhang, Bo

    2016-12-01

    A novel ultralow turnoff loss dual-gate silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) is proposed. The proposed SOI LIGBT features an extra trench gate inserted between the p-well and n-drift, and an n-type carrier stored (CS) layer beneath the p-well. In the on-state, the extra trench gate acts as a barrier, which increases the carrier density at the cathode side of n-drift region, resulting in a decrease of the on-state voltage drop (Von). In the off-state, due to the uniform carrier distribution and the assisted depletion effect induced by the extra trench gate, large number of carriers can be removed at the initial turnoff process, contributing to a low turnoff loss (Eoff). Moreover, owing to the dual-gate field plates and CS layer, the carrier density beneath the p-well can greatly increase, which further improves the tradeoff between Eoff and Von. Simulation results show that Eoff of the proposed SOI LIGBT can decrease by 77% compared with the conventional trench gate SOI LIGBT at the same Von of 1.1 V. Project supported by the National Natural Science Foundation of China (Grant Nos. 61376080 and 61674027) and the Natural Science Foundation of Guangdong Province, China (Grant Nos. 2014A030313736 and 2016A030311022).

  8. Compressibility effects on the non-linear receptivity of boundary layers to dielectric barrier discharges

    NASA Astrophysics Data System (ADS)

    Denison, Marie F. C.

    The reduction of drag and aerodynamic heating caused by boundary layer transition is of central interest for the development of hypersonic vehicles. Receptivity to flow perturbation in the form of Tollmien-Schlichting (TS) wave growth often determines the first stage of the transition process, which can be delayed by depositing specific excitations into the boundary layer. Weakly ionized Dielectric Barrier Discharge (DBD) actuators are being investigated as possible sources of such excitations, but little is known today about their interaction with high-speed flows. In this framework, the first part of the thesis is dedicated to a receptivity study of laminar compressible boundary layers over a flat plate by linear stability analysis following an adjoint operator formulation, under DBD representative excitations assumed independent of flow conditions. The second part of the work concentrates on the development of a coupled plasma-Navier and Stokes solver targeted at the study of supersonic flow and compressibility effects on DBD forcing and non-parallel receptivity. The linear receptivity study of quasi-parallel compressible flows reveals several interesting features such as a significant shift of the region of maximum receptivity deeper into the flow at high Mach number and strong wave amplitude reduction compared to incompressible flows. The response to DBD relevant excitation distributions and to variations of the base flow conditions and system length scales follows these trends. Observed absolute amplitude changes and relative sensitivity modifications between source types are related to the evolution of the offset between forcing peak profile and relevant adjoint mode maximum. The analysis highlights the crucial importance of designing and placing the actuator in a way that matches its force field to the position of maximum boundary layer receptivity for the specific flow conditions of interest. In order to address the broad time and length scale spectrum

  9. Degradation of a two-layer thermal barrier coating under thermal cycling. [for superalloys of aircraft turbine engine blades

    NASA Technical Reports Server (NTRS)

    Maier, R. D.; Scheuermann, C. M.; Andrews, C. W.

    1981-01-01

    A two-layer plasma-sprayed thermal barrier coating on a directionally solidified nickel-base eutectic alloy substrate was characterized prior to and after thermal cycling to 1095 C in an accelerated furnace test. The coating was comprised of an inner layer of Ni-16.4Cr-5.1Al-0.15Y (wt%) bond coat and an outer layer of ZrO2-7.9Y2O3 (wt%) thermal barrier. Characterization of the bond coat revealed that substantial amounts of yttrium and aluminum were oxidized during plasma-spraying in air. The oxidation of these elements reduced the protective capacity of the bond coat so that, on thermal exposure, severe degradation of the bond coat resulted and large amounts of nickel oxide formed. This nickel oxide was demonstrated to grow outward into the thermal barrier, which appears to have increased the stresses in the thermal barrier and contributed to its failure near the thermal barrier-bond coat interface.

  10. Al{sub 2}O{sub 3} multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition

    SciTech Connect

    Jung, Hyunsoo; Jeon, Heeyoung; Choi, Hagyoung; Ham, Giyul; Shin, Seokyoon; Jeon, Hyeongtag

    2014-02-21

    Al{sub 2}O{sub 3} films deposited by remote plasma atomic layer deposition have been used for thin film encapsulation of organic light emitting diode. In this study, a multi-density layer structure consisting of two Al{sub 2}O{sub 3} layers with different densities are deposited with different deposition conditions of O{sub 2} plasma reactant time. This structure improves moisture permeation barrier characteristics, as confirmed by a water vapor transmission rate (WVTR) test. The lowest WVTR of the multi-density layer structure was 4.7 × 10{sup −5} gm{sup −2} day{sup −1}, which is one order of magnitude less than WVTR for the reference single-density Al{sub 2}O{sub 3} layer. This improvement is attributed to the location mismatch of paths for atmospheric gases, such as O{sub 2} and H{sub 2}O, in the film due to different densities in the layers. This mechanism is analyzed by high resolution transmission electron microscopy, elastic recoil detection, and angle resolved X-ray photoelectron spectroscopy. These results confirmed that the multi-density layer structure exhibits very good characteristics as an encapsulation layer via location mismatch of paths for H{sub 2}O and O{sub 2} between the two layers.

  11. Comparison of MWIR unipolar barrier structures based on strained layer superlattices (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Ramirez, David A.; Myers, Stephen A.; Kuznetsova, Yuliya; Mathews, Sen; Schuler-Sandy, Theodore; Steenbergen, Elizabeth H.; Morath, Christian P.; Cowan, Vicent M.; Krishna, Sanjay

    2016-09-01

    In this work, we compare the performance of three MWIR unipolar barrier structures based on the InAs/GaSb Type-2 strained layer superlattice material system. We have designed, fabricated, and characterized pBiBn, pBn, and pBp detector structures. All the structures have been designed so that the cut off wavelength is around 5 microns at 100 K. We fabricated single-pixel devices and characterize their radiometric performance. In addition, we have characterized the degradation of the performance of the devices after exposing the devices to 63 MeV proton radiation to total ionizing dose of 100 kRad (Si). In this report, we compare the performance of the different structures with the objective of determining the advantages and disadvantages of the different designs. This work was supported by the Small Business Innovation Research (SBIR) program under the contract FA9453-14-C-0032, sponsored by the Air Force Research Laboratory (AFRL).

  12. Thin-film Nanofibrous Composite Membranes Containing Cellulose or Chitin Barrier Layers Fabricated by Ionic Liquids

    SciTech Connect

    H Ma; B Hsiao; B Chu

    2011-12-31

    The barrier layer of high-flux ultrafiltration (UF) thin-film nanofibrous composite (TFNC) membranes for purification of wastewater (e.g., bilge water) have been prepared by using cellulose, chitin, and a cellulose-chitin blend, regenerated from an ionic liquid. The structures and properties of regenerated cellulose, chitin, and a cellulose-chitin blend were analyzed with thermogravimetric analysis (TGA) and wide-angle X-ray diffraction (WAXD). The surface morphology, pore size and pore size distribution of TFNC membranes were determined by SEM images and molecular weight cut-off (MWCO) methods. An oil/water emulsion, a model of bilge water, was used as the feed solution, and the permeation flux and rejection ratio of the membranes were investigated. TFNC membranes based on the cellulose-chitin blend exhibited 10 times higher permeation flux when compared with a commercial UF membrane (PAN10, Sepro) with a similar rejection ratio after filtration over a time period of up to 100 h, implying the practical feasibility of such membranes for UF applications.

  13. Polystyrene films as barrier layers for corrosion protection of copper and copper alloys.

    PubMed

    Románszki, Loránd; Datsenko, Iaryna; May, Zoltán; Telegdi, Judit; Nyikos, Lajos; Sand, Wolfgang

    2014-06-01

    Dip-coated polystyrene layers of sub-micrometre thickness (85-500nm) have been applied on copper and copper alloys (aluminium brass, copper-nickel 70/30), as well as on stainless steel 304, and produced an effective barrier against corrosion and adhesion of corrosion-relevant microorganisms. According to the dynamic wettability measurements, the coatings exhibited high advancing (103°), receding (79°) and equilibrium (87°) contact angles, low contact angle hysteresis (6°) and surface free energy (31mJ/m(2)). The corrosion rate of copper-nickel 70/30 alloy samples in 3.5% NaCl was as low as 3.2μm/a (44% of that of the uncoated samples), and in artificial seawater was only 0.9μm/a (29% of that of the uncoated samples). Cell adhesion was studied by fluorescence microscopy, using monoculture of Desulfovibrio alaskensis. The coatings not only decreased the corrosion rate but also markedly reduced the number of bacterial cells adhered to the coated surfaces. The PS coating on copper gave the best result, 2×10(3)cells/cm(2) (1% of that of the uncoated control).

  14. The Barrier Layer of the Atlantic Warmpool: Formation Mechanism and Influence on the Mean Climate

    SciTech Connect

    Balaguru, Karthik; Chang, P.; Saravanan, R.; Jang, C. J.

    2012-04-20

    Many Coupled General Circulation Models (CGCMs) tend to overestimate the salinity in the Atlantic warm pool or the Northwestern Tropical Atlantic (NWTA) and underestimate the surface salinity in the subtropical salinity maxima region. Most of these models also suffer from a sea-surface temperature (SST) bias in the NWTA region, leading to suggestions that the upper ocean salinity stratification may need to be improved in order to improve the Barrier Layer (BL) simulations and thus the SST through BL-SST-Intertropical Convergence Zone (ITCZ) feedbacks. In the present study, we use a CGCM to perform a set of idealized numerical experiments to test and understand the sensitivity of the BL and consequently SST in the NWTA region to freshwater flux and hence the upper ocean salinity stratification. We find that the BL of the NWTA is sensitive to upper ocean salinity changes in the Amazon river discharge region and the subtropical salinity maxima region. The BL phenomenon is further manifested by the formation of winter temperature inversions in our model simulations, the maximum magnitude of inversions being about 0.20 C. The atmo- spheric response causes a statistically significant reduction of mean precipitation and SST in the equatorial Atlantic region and helps improve the respective biases by 10-15 %. In the region of improved BL simulation, the SST change is positive and in the right direction of bias correction, albeit weak.

  15. Remodeling of Tight Junctions and Enhancement of Barrier Integrity of the CACO-2 Intestinal Epithelial Cell Layer by Micronutrients.

    PubMed

    Valenzano, Mary Carmen; DiGuilio, Katherine; Mercado, Joanna; Teter, Mimi; To, Julie; Ferraro, Brendan; Mixson, Brittany; Manley, Isabel; Baker, Valerissa; Moore, Beverley A; Wertheimer, Joshua; Mullin, James M

    2015-01-01

    The micronutrients zinc, quercetin, butyrate, indole and berberine were evaluated for their ability to induce remodeling of epithelial tight junctions (TJs) and enhance barrier integrity in the CACO-2 gastrointestinal epithelial cell culture model. All five of these chemically very diverse micronutrients increased transepithelial electrical resistance (Rt) significantly, but only berberine also improved barrier integrity to the non-electrolyte D-mannitol. Increases of Rt as much as 200% of untreated controls were observed. Each of the five micronutrients also induced unique, signature-like changes in TJ protein composition, suggesting multiple pathways (and TJ arrangements) by which TJ barrier function can be enhanced. Decreases in abundance by as much as 90% were observed for claudin-2, and increases of over 300% could be seen for claudins -5 and -7. The exact effects of the micronutrients on barrier integrity and TJ protein composition were found to be highly dependent on the degree of differentiation of the cell layer at the time it was exposed to the micronutrient. The substratum to which the epithelial layer adheres was also found to regulate the response of the cell layer to the micronutrient. The implications of these findings for therapeutically decreasing morbidity in Inflammatory Bowel Disease are discussed.

  16. Ultraviolet-enhanced light emitting diode employing individual ZnO microwire with SiO{sub 2} barrier layers

    SciTech Connect

    Xu, Yingtian; Xu, Li; Dai, Jun; Ma, Yan; Chu, Xianwei; Zhang, Yuantao; Du, Guotong; Zhang, Baolin; Yin, Jingzhi

    2015-05-25

    This paper details the fabrication of n-ZnO single microwire (SMW)-based high-purity ultraviolet light-emitting diodes (UV-LEDs) with an added SiO{sub 2} barrier layer on the p-Si substrate. However, the current-voltage (I-V) curve exhibited non-ideal rectifying characteristics. Under forward bias, both UV and visible emissions could be detected by electroluminescence (EL) measurement. When bias voltage reached 60 V at room temperature, a UV emission spike occurred at 390 nm originating from the n-ZnO SMW. Compared with the EL spectrum of the n-ZnO SMW/p-Si heterojunction device without the SiO{sub 2} barrier layer, we saw improved UV light extraction efficiency from the current-blocking effect of the SiO{sub 2} layer. The intense UV emission in the n-ZnO SMW/SiO{sub 2}/p-Si heterojunction indicated that the SiO{sub 2} barrier layer can restrict the movement of electrons as expected and result in effective electron-hole recombination in ZnO SMW.

  17. Controlled aluminum-induced crystallization of an amorphous silicon thin film by using an oxide-layer diffusion barrier

    NASA Astrophysics Data System (ADS)

    Hwang, Ji-Hyun; Kwak, Hyunmin; Kwon, Myeung Hoi

    2014-03-01

    Aluminum-induced crystallization (AIC) of amorphous silicon with an Al2O3 diffusion barrier was investigated for controlling Si crystallization and preventing layer exchange during the annealing process. An Al2O3 layer was deposited between the a-Si and the Al films (a-Si/Al2O3/Al/Glass) and was blasted with an air spray gun with alumina beads to form diffusion channels between the Si and the Al layers. During the annealing process, small grain Si x Al seeds were formed at the channels. Then, the Al2O3 diffusion barrier was restructured to close the channels and prevent further diffusion of Al atoms into the a-Si layer. A polycrystalline Si film with (111), (220) and (311) crystallization peaks in the X-ray diffraction pattern was formed by annealing at 560 °C in a conventional furnace. That film showed a p-type semiconducting behavior with good crystallinity and a large grain size of up to 14.8 µm. No layer conversion occurred between the Si and the Al layers, which had been the fundamental obstacle to the applications in the crystallization of a-Si films by using the AIC method.

  18. Chromium oxide as a metal diffusion barrier layer: An x-ray absorption fine structure spectroscopy study

    NASA Astrophysics Data System (ADS)

    Ahamad Mohiddon, Md.; Lakshun Naidu, K.; Ghanashyam Krishna, M.; Dalba, G.; Ahmed, S. I.; Rocca, F.

    2014-01-01

    The interaction at the interface between chromium and amorphous Silicon (a-Si) films in the presence of a sandwich layer of chromium oxide is investigated using X-ray absorption fine structure (XAFS) spectroscopy. The oxidized interface was created, in situ, prior to the deposition of a 400 nm tick a-Si layer over a 50 nm tick Cr layer. The entire stack of substrate/metallic Cr/Cr2O3/a-Si was then annealed at temperatures from 300 up to 700 °C. Analysis of the near edge and extended regions of each XAFS spectrum shows that only a small fraction of Cr is able to diffuse through the oxide layer up to 500 °C, while the remaining fraction is buried under the oxide layer in the form of metallic Cr. At higher temperatures, diffusion through the oxide layer is enhanced and the diffused metallic Cr reacts with a-Si to form CrSi2. At 700 °C, the film contains Cr2O3 and CrSi2 without evidence of unreacted metallic Cr. The activation energy and diffusion coefficient of Cr are quantitatively determined in the two temperature regions, one where the oxide acts as diffusion barrier and another where it is transparent to Cr diffusion. It is thus demonstrated that chromium oxide can be used as a diffusion barrier to prevent metal diffusion into a-Si.

  19. Efficient, air-stable colloidal quantum dot solar cells encapsulated using atomic layer deposition of a nanolaminate barrier

    SciTech Connect

    Ip, Alexander H.; Labelle, André J.; Sargent, Edward H.

    2013-12-23

    Atomic layer deposition was used to encapsulate colloidal quantum dot solar cells. A nanolaminate layer consisting of alternating alumina and zirconia films provided a robust gas permeation barrier which prevented device performance degradation over a period of multiple weeks. Unencapsulated cells stored in ambient and nitrogen environments demonstrated significant performance losses over the same period. The encapsulated cell also exhibited stable performance under constant simulated solar illumination without filtration of harsh ultraviolet photons. This monolithically integrated thin film encapsulation method is promising for roll-to-roll processed high efficiency nanocrystal solar cells.

  20. Vacancy reactions near the interface between electroplated Cu and barrier metal layers studied by monoenergetic positron beams

    NASA Astrophysics Data System (ADS)

    Uedono, A.; Kirimura, T.; Wilson, C. J.; Croes, K.; Demuynck, S.; Tőkei, Z.; Oshima, N.; Suzuki, R.

    2013-08-01

    Positron annihilation was used to probe vacancy-type defects in electrodeposited Cu films with capping layers. For as-deposited Cu films, two different types of vacancy-type defects were found to coexist: vacancy aggregates (V2-V4) and larger vacancy clusters (˜V10). During the fabrication processes of the capping layers, these defects diffused towards the interface between the capping layers and Cu. On the sample with the capping layers consisting of TaN and SiCN, a vacancy-rich region about 40 nm wide was introduced below the TaN/Cu interface, which was attributed to the blocking of vacancies by the TaN layer, and resulted in their agglomeration. The SiCN layer started degrading at annealing temperatures above 270 °C. Above 570 °C, the size of open spaces and their concentration in the SiCN layer decreased, which can be attributed to the diffusion of Cu atoms into the SiCN layer. Positron annihilation was shown to have a high potential to detect vacancy-type defects and open spaces near the interface between barrier metals and electroplated Cu.

  1. Electroless nickel alloy deposition on SiO2 for application as a diffusion barrier and seed layer in 3D copper interconnect technology.

    PubMed

    Kim, Tae-Yoo; Son, Hwa-Jin; Lim, Seung-Kyu; Song, Young-Il; Park, Hwa-Sun; Suh, Su-Jeong

    2014-12-01

    Electroless Ni-P films were investigated with the aim of application as barrier and seed layers in 3D interconnect technology. Different shapes of blind-via holes were fabricated with a deep reactive ion etcher and SiO2 formed on these holes as an insulating layer. The surface of the substrate has been made hydrophilic by O2 plasma treatment with 100 W of power for 20 min. Electroless Ni-P films were deposited as both a diffusion barrier and a seed layer for Cu filling process. Prior to plating, substrates were activated in a palladium chloride solution after sensitization in a tin chloride solution with various conditions in order to deposit uniform films in TSV. After the formation of the electroless barrier layer, electro Cu was plated directly on the barrier layer. Ni-P films fabricated in blind-via holes were observed by scanning electron microscope. Energy dispersive spectroscopy line scanning was carried out for evaluating the diffusion barrier properties of the Ni-P films. The electroless Ni-P layer worked well as a Cu diffusion barrier until 300 degrees C. However, Cu ions diffused into barrier layer when the annealing temperature increases over 400 degrees C.

  2. On statistical properties of transport barriers in magnetospheric and laboratory boundary layers

    NASA Astrophysics Data System (ADS)

    Savin, Sergey; Budaev, Viacheslav; Zeleniy, Lev; Amata, Ermanno; Kozak, Lyudmila; Buechner, Joerg; Romanov, Stanislav; Blecki, Jan; Balikhin, Michael A.; Lezhen, Liudmila

    Transport barriers at outer magnetospheric boundaries have a dualistic feature: being effec-tive in limitation of the momentum transfer and serving as an effective obstacle, they display the super-diffusive statistical properties and provide partial exchange of plasmas. In tokamaks namely the statistical properties of transport barriers look to control the high and low heating modes, while small size of the barriers prevents their detailed studies. We tend to use magne-tospheric multi-spacecraft data to improve understanding of common physics in the transport barriers. We show examples from Interball-1 and Cluster with quiet solar wind. The inherently turbulent crossings in this equilibrium cases demonstrate ion heating namely in the transport barrier. It agrees with the kinetic energy transformation into the thermal one inside the barrier -the turbulent dissipation of the magnetosheath kinetic energy -as simultaneously with the ion temperature rise, the general velocity component drops from its model prediction. In sense of the momentum transfer the transport turbulent barriers effectively isolate the high-alti-tude cusp from fast-flowing magnetosheath. Contrary to that, several examples from different missions and different plasma parameters demonstrate the super-diffusive transport character. The individual coherent structures inside the barriers, which we call Alfvenic 'collapsons', have similar scale chains to that of high kinetic plasma pressure jets, showing mutual interaction features. We think that the interacting jets and barriers, accompanying by classic and/ or micro-reconnection, have rather general importance for the plasma physics, and for understanding of turbulence and mechanisms of magnetic field generation. These coherent, nonlinear interacting structures, most probably, provide intermittency a long-range correlations inside the transport barriers (c.f. blobs and flow spikes in fusion devices). We recall that very high-amplitude turbulence in

  3. Research Update: Reactively sputtered nanometer-thin ZrN film as a diffusion barrier between Al and boron layers for radiation detector applications

    SciTech Connect

    Golshani, Negin Mohammadi, V.; Schellevis, H.; Beenakker, C. I. M.; Ishihara, R.

    2014-10-01

    In this paper, optimization of the process flow for PureB detectors is investigated. Diffusion barrier layers between a boron layer and the aluminum interconnect can be used to enhance the performance and visual appearance of radiation detectors. Few nanometers-thin Zirconium Nitride (ZrN) layer deposited by reactive sputtering in a mixture of Ar/N{sub 2}, is identified as a reliable diffusion barrier with better fabrication process compatibility than others. The barrier properties of this layer have been tested for different boron layers deposited at low and high temperatures with extensive optical microscopy analyses, electron beam induced current, SEM, and electrical measurements. This study demonstrated that spiking behavior of pure Al on Si can be prevented by the thin ZrN layer thus improving the performance of the radiation detectors fabricated using boron layer.

  4. Atomic Layer Deposited Co(W) Film as a Single-Layered Barrier/Liner for Next-Generation Cu-Interconnects

    NASA Astrophysics Data System (ADS)

    Shimizu, Hideharu; Sakoda, Kaoru; Momose, Takeshi; Shimogaki, Yukihiro

    2012-05-01

    Cobalt film with tungsten addition [Co(W)] has the potential to be an effective single-layered barrier/liner in interconnects awing to its good adhesion with Cu, a lower resistivity than TaN, and an improved barrier property with respect to cobalt films. Our previous study on chemical-vapor-deposited (CVD) Co(W) using carbonyl precursors clarified, however, that WO3 included in the films increased the resistivity. In this current study, to reduce the resistivity of Co(W), oxygen-free Co(W) films were fabricated from two oxygen-free precursors, bis(cyclopentadienyl)cobalt and bis(cyclopentadienyl)tungstendihydride, by atomic layer deposition (ALD) using NH2 radicals generated using a hot filament. Results revealed that (a) W concentration in ALD-Co(W) could be controlled by adjusting the gas-feed sequences, (b) W addition improved the barrier property of ALD-Co(W) against Cu diffusion, (c) diffusion of Cu into ALD-Co(W) had a high activation energy, 2.0 eV, indicating interstitial diffusion, and (d) ALD-Co(W) consisted mainly of an amorphous-like phase, which is consistent with the high activation energy of Cu diffusion.

  5. The role of the spray pyrolysed Al2O3 barrier layer in achieving high efficiency solar cells on flexible steel substrates

    NASA Astrophysics Data System (ADS)

    Gledhill, Sophie E.; Zykov, Anton; Rissom, Thorsten; Caballero, Raquel; Kaufmann, Christian A.; Fischer, Christian-Herbert; Lux-Steiner, Martha; Efimova, Varvara; Hoffmann, Volker; Oswald, Steffen

    2011-07-01

    Thin film chalcopyrite solar cells grown on light-weight, flexible steel substrates are poised to enter the photovoltaic market. To guarantee good solar cell performance, the diffusion of iron from the steel into the CIGSe absorber material must be hindered during layer deposition. A barrier layer is thus required to isolate the solar module from the metal substrate, both electronically and chemically. Ideally the barrier layer would be deposited by a cheap roll-to-roll process suitable to coat flexible steel substrates. Aluminium oxide deposited by spray pyrolysis matches the criteria. The coating is homogeneous over rough substrates allowing comparatively thin barrier layers to be utilized. In this article, solar cell results are presented contrasting the device performance made with a barrier layer to that without a barrier layer. Secondary Ion Mass spectrometry (SIMS) measurements show that the spray pyrolysed barrier layer diminishes iron diffusion to the chalcopyrite absorber layer. The role of sodium, imperative for the growth of high efficiency chalcopyrite solar cells, and how it interacts with Al2O3 is discussed.

  6. Physical and numerical modeling of an inclined three-layer (silt/gravelly sand/clay) capillary barrier cover system under extreme rainfall.

    PubMed

    Ng, Charles W W; Liu, Jian; Chen, Rui; Xu, Jie

    2015-04-01

    As an extension of the two-layer capillary barrier, a three-layer capillary barrier landfill cover system is proposed for minimizing rainfall infiltration in humid climates. This system consists of a compacted clay layer lying beneath a conventional cover with capillary barrier effects (CCBE), which is in turn composed of a silt layer sitting on top of a gravelly sand layer. To explore the effectiveness of the new system in minimizing rainfall infiltration, a flume model (3.0 m × 1.0 m × 1.1 m) was designed and set up in this study. This physical model was heavily instrumented to monitor pore water pressure, volumetric water content, surface runoff, infiltration and lateral drainage of each layer, and percolation of the cover system. The cover system was subjected to extreme rainfall followed by evaporation. The experiment was also back-analyzed using a piece of finite element software called CODE_BRIGHT to simulate transient water flows in the test. Based on the results obtained from various instruments, it was found that breakthrough of the two upper layers occurred for a 4-h rainfall event having a 100-year return period. Due to the presence of the newly introduced clay layer, the percolation of the three-layer capillary barrier cover system was insignificant because the clay layer enabled lateral diversion in the gravelly sand layer above. In other words, the gravelly sand layer changed from being a capillary barrier in a convention CCBE cover to being a lateral diversion passage after the breakthrough of the two upper layers. Experimental and back-analysis results confirm that no infiltrated water seeped through the proposed three-layer barrier system. The proposed system thus represents a promising alternative landfill cover system for use in humid climates.

  7. Dual Band Deep Ultraviolet AlGaN Photodetectors

    NASA Technical Reports Server (NTRS)

    Aslam, S.; Miko, L.; Stahle, C.; Franz, D.; Pugel, D.; Guan, B.; Zhang, J. P.; Gaska, R.

    2007-01-01

    We report on the design, fabrication and characterization of a back-illuminated voltage bias selectable dual-band AlGaN UV photodetector. The photodetector can separate UVA and W-B band radiation by bias switching a two terminal n-p-n homojunction structure that is fabricated in the same pixel. When a forward bias is applied between the top and bottom electrodes, the detector can sense UV-A and reject W-B band radiation. Alternatively, under reverse bias, the photodetector can sense UV-B and reject UV-A band radiation.

  8. Analysis of Al diffusion processes in TiN barrier layers for the application in silicon solar cell metallization

    NASA Astrophysics Data System (ADS)

    Kumm, J.; Samadi, H.; Chacko, R. V.; Hartmann, P.; Wolf, A.

    2016-07-01

    An evaporated Al layer is known as an excellent rear metallization for highly efficient solar cells, but suffers from incompatibility with a common solder process. To enable solar cell-interconnection and module integration, in this work the Al layer is complemented with a solder stack of TiN/Ti/Ag or TiN/NiV/Ag, in which the TiN layer acts as an Al diffusion barrier. X-ray photoelectron spectroscopy measurements prove that diffusion of Al through the stack and the formation of an Al2O3 layer on the stack's surface are responsible for a loss of solderability after a strong post-metallization anneal, which is often mandatory to improve contact resistance and passivation quality. An optimization of the reactive TiN sputter process results in a densification of the TiN layer, which improves its barrier quality against Al diffusion. However, measurements with X-ray diffraction and scanning electron microscopy show that small grains with vertical grain boundaries persist, which still offer fast diffusion paths. Therefore, the concept of stuffing is introduced. By incorporating oxygen into the grain boundaries of the sputtered TiN layer, Al diffusion is strongly reduced as confirmed by secondary ion mass spectroscopy profiles. A quantitative analysis reveals a one order of magnitude lower Al diffusion coefficient for stuffed TiN layers. This metallization system maintains its solderability even after strong post-metallization annealing at 425 °C for 15 min. This paper thus presents an industrially feasible, conventionally solderable, and long-term stable metallization scheme for highly efficient silicon solar cells.

  9. Accuracy of Young's Modulus of Thermal Barrier Coating Layer Determined by Bending Resonance of a Multilayered Specimen

    NASA Astrophysics Data System (ADS)

    Waki, Hiroyuki; Takizawa, Kensuke; Kato, Masahiko; Takahashi, Satoru

    2016-04-01

    The Young's modulus of individual layer in thermal barrier coating (TBC) system is an important mechanical property because it allows determining the parameters of materials mechanics in the TBC system. In this study, we investigated the accuracy of the evaluation method for the Young's modulus of a TBC layer according to the first bending resonance of a multilayered specimen comprising a substrate, bond coating, and TBC. First, we derived a closed-form solution for the Young's modulus of the TBC layer using the equation of motion for the bending vibration of a composite beam. The solution for the three-layered model provided the Young's modulus of the TBC layer according to the measured resonance frequency and the known values for the dimensions, mass, and Young's moduli of all the other layers. Next, we analyzed the sensitivity of these input errors to the evaluated Young's modulus and revealed the important inputs for accurate evaluation. Finally, we experimentally confirmed that the Young's modulus of the TBC layer was obtained accurately by the developed method.

  10. Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes

    SciTech Connect

    Mehnke, Frank Kuhn, Christian; Guttmann, Martin; Reich, Christoph; Kolbe, Tim; Rass, Jens; Wernicke, Tim; Kueller, Viola; Knauer, Arne; Lapeyrade, Mickael; Einfeldt, Sven; Weyers, Markus; Kneissl, Michael

    2014-08-04

    The design and Mg-doping profile of AlN/Al{sub 0.7}Ga{sub 0.3}N electron blocking heterostructures (EBH) for AlGaN multiple quantum well (MQW) light emitting diodes (LEDs) emitting below 250 nm was investigated. By inserting an AlN electron blocking layer (EBL) into the EBH, we were able to increase the quantum well emission power and significantly reduce long wavelength parasitic luminescence. Furthermore, electron leakage was suppressed by optimizing the thickness of the AlN EBL while still maintaining sufficient hole injection. Ultraviolet (UV)-C LEDs with very low parasitic luminescence (7% of total emission power) and external quantum efficiencies of 0.19% at 246 nm have been realized. This concept was applied to AlGaN MQW LEDs emitting between 235 nm and 263 nm with external quantum efficiencies ranging from 0.002% to 0.93%. After processing, we were able to demonstrate an UV-C LED emitting at 234 nm with 14.5 μW integrated optical output power and an external quantum efficiency of 0.012% at 18.2 A/cm{sup 2}.

  11. Semi-polar (11-22) AlGaN on overgrown GaN on micro-rod templates: Simultaneous management of crystal quality improvement and cracking issue

    NASA Astrophysics Data System (ADS)

    Li, Z.; Jiu, L.; Gong, Y.; Wang, L.; Zhang, Y.; Bai, J.; Wang, T.

    2017-02-01

    Thick and crack-free semi-polar (11-22) AlGaN layers with various high Al compositions have been achieved by means of growth on the top of nearly but not yet fully coalesced GaN overgrown on micro-rod templates. The range of the Al composition of up to 55.7% was achieved, corresponding to an emission wavelength of up to 270 nm characterised by photoluminescence at room temperature. X-ray diffraction (XRD) measurements show greatly improved crystal quality as a result of lateral overgrowth compared to the AlGaN counterparts on standard planar substrates. The full width at half maximums of the XRD rocking curves measured along the [1-100]/[11-2-3] directions (the two typical orientations for characterizing the crystal quality of (11-22) AlGaN) are 0.2923°/0.2006° for 37.8% Al and 0.3825°/0.2064° for 55.7% Al, respectively, which have never been achieved previously. Our calculation based on reciprocal space mapping measurements has demonstrated significant strain relaxation in the AlGaN as a result of utilising the non-coalesced GaN underneath, contributing to the elimination of any cracks. The results presented have demonstrated that our overgrowth technique can effectively manage strain and improve crystal quality simultaneously.

  12. High-quality Ga-rich AlGaN grown on trapezoidal patterned GaN template using super-short period AlN/GaN superlattices for rapid coalescence

    NASA Astrophysics Data System (ADS)

    Xiao, Ming; Zhang, Jincheng; Hao, Yue

    2017-04-01

    High quality crack-free Ga-rich Al26.1Ga73.9N film was grown on trapezoidal patterned GaN template (TPGT) by low-pressure metalorganic chemical vapor deposition. The super-short period AlN/GaN superlattices structure was used to grow AlGaN material instead of the direct growth method. We obtained large lateral to vertical growth rate ratio larger than 4.79. The growth rate of GaN layer was proved to be the decisive factor of the lateral to vertical growth rate ratio. Moreover, for AlGaN growth, we found that that the TPGT is more beneficial to suppression of crack and relaxation of biaxial tensile strain than planar GaN template. The obtained results demonstrate that, comparing with AlGaN grown on planar GaN template, the threading dislocation density in AlGaN grown on TPGT was reduced from 2×109 cm-2 to 2×108 cm-2.

  13. A Theoretical Model for Predicting Residual Stress Generation in Fabrication Process of Double-Ceramic-Layer Thermal Barrier Coating System.

    PubMed

    Song, Yan; Wu, Weijie; Xie, Feng; Liu, Yilun; Wang, Tiejun

    2017-01-01

    Residual stress arisen in fabrication process of Double-Ceramic-Layer Thermal Barrier Coating System (DCL-TBCs) has a significant effect on its quality and reliability. In this work, based on the practical fabrication process of DCL-TBCs and the force and moment equilibrium, a theoretical model was proposed at first to predict residual stress generation in its fabrication process, in which the temperature dependent material properties of DCL-TBCs were incorporated. Then, a Finite Element method (FEM) has been carried out to verify our theoretical model. Afterwards, some important geometric parameters for DCL-TBCs, such as the thickness ratio of stabilized Zirconia (YSZ, ZrO2-8%Y2O3) layer to Lanthanum Zirconate (LZ, La2Zr2O7) layer, which is adjustable in a wide range in the fabrication process, have a remarkable effect on its performance, therefore, the effect of this thickness ratio on residual stress generation in the fabrication process of DCL-TBCs has been systematically studied. In addition, some thermal spray treatment, such as the pre-heating treatment, its effect on residual stress generation has also been studied in this work. It is found that, the final residual stress mainly comes from the cooling down process in the fabrication of DCL-TBCs. Increasing the pre-heating temperature can obviously decrease the magnitude of residual stresses in LZ layer, YSZ layer and substrate. With the increase of the thickness ratio of YSZ layer to LZ layer, magnitudes of residual stresses arisen in LZ layer and YSZ layer will increase while residual stress in substrate will decrease.

  14. A Theoretical Model for Predicting Residual Stress Generation in Fabrication Process of Double-Ceramic-Layer Thermal Barrier Coating System

    PubMed Central

    Song, Yan; Wu, Weijie; Xie, Feng; Liu, Yilun; Wang, Tiejun

    2017-01-01

    Residual stress arisen in fabrication process of Double-Ceramic-Layer Thermal Barrier Coating System (DCL-TBCs) has a significant effect on its quality and reliability. In this work, based on the practical fabrication process of DCL-TBCs and the force and moment equilibrium, a theoretical model was proposed at first to predict residual stress generation in its fabrication process, in which the temperature dependent material properties of DCL-TBCs were incorporated. Then, a Finite Element method (FEM) has been carried out to verify our theoretical model. Afterwards, some important geometric parameters for DCL-TBCs, such as the thickness ratio of stabilized Zirconia (YSZ, ZrO2-8%Y2O3) layer to Lanthanum Zirconate (LZ, La2Zr2O7) layer, which is adjustable in a wide range in the fabrication process, have a remarkable effect on its performance, therefore, the effect of this thickness ratio on residual stress generation in the fabrication process of DCL-TBCs has been systematically studied. In addition, some thermal spray treatment, such as the pre-heating treatment, its effect on residual stress generation has also been studied in this work. It is found that, the final residual stress mainly comes from the cooling down process in the fabrication of DCL-TBCs. Increasing the pre-heating temperature can obviously decrease the magnitude of residual stresses in LZ layer, YSZ layer and substrate. With the increase of the thickness ratio of YSZ layer to LZ layer, magnitudes of residual stresses arisen in LZ layer and YSZ layer will increase while residual stress in substrate will decrease. PMID:28103275

  15. Completely transparent ohmic electrode on p-type AlGaN for UV LEDs with core-shell Cu@alloy nanosilk network (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Cai, Duanjun; Wang, Huachun; Huang, Youyang; Wu, Chenping; Chen, Xiaohong; Gao, Na; Wei, Tongbo T.; Wang, Junxi; Li, Shuping; Kang, Junyong

    2016-09-01

    Metal nanowire networks hold a great promise, which have been supposed the only alternative to ITO as transparent electrodes for their excellent performance in touch screen, LED and solar cell. It is well known that the difficulty in making transparent ohmic electrode to p-type high-Al-content AlGaN conducting layer has highly constrained the further development of UV LEDs. On the IWN-2014, we reported the ohmic contact to n, p-GaN with direct graphene 3D-coated Cu nanosilk network and the fabrication of complete blue LED. On the ICNS-2015, we reported the ohmic contact to n-type AlGaN conducting layer with Cu@alloy nanosilk network. Here, we further demonstrate the latest results that a novel technique is proposed for fabricating transparent ohmic electrode to high-Al-content AlGaN p-type conducting layer in UV LEDs using Cu@alloy core-shell nanosilk network. The superfine copper nanowires (16 nm) was synthesized for coating various metals such as Ni, Zn, V or Ti with different work functions. The transmittance showed a high transparency (> 90%) over a broad wavelength range from 200 to 3000 nm. By thermal annealing, ohmic contact was achieved on p-type Al0.5Ga0.5N layer with Cu@Ni nanosilk network, showing clearly linear I-V curve. By skipping the p-type GaN cladding layer, complete UV LED chip was fabricated and successfully lit with bright emission at 276 nm.

  16. Valence-band offsets and Schottky barrier heights of layered semiconductors explained by interface-induced gap states

    NASA Astrophysics Data System (ADS)

    Mönch, Winfried

    1998-04-01

    Many metal chalcogenides are layered semiconductors. They consist of chalcogen-metal-chalcogen layers that are themselves bound by van der Waals forces. Hence, heterostructures involving layered compounds are abrupt and strain-free. Experimental valence-band offsets of heterostructures between GaSe, InSe, SnS2, SnSe2, MoS2, MoTe2, WSe2, and CuInSe2 and between some of these compounds and ZnSe, CdS, and CdTe as well as barrier heights of Au contacts on GaSe, InSe, MoS2, MoTe2, WSe2, ZnSe, CdS, and CdTe are analyzed. The valence-band discontinuities of the heterostructures and the barrier heights of the Schottky contact compounds are consistently described by the continuum of interface-induced gap states as the primary mechanism that governs the band lineup at semiconductor interfaces.

  17. Silica-sol-based spin-coating barrier layer against phosphorous diffusion for crystalline silicon solar cells.

    PubMed

    Uzum, Abdullah; Fukatsu, Ken; Kanda, Hiroyuki; Kimura, Yutaka; Tanimoto, Kenji; Yoshinaga, Seiya; Jiang, Yunjian; Ishikawa, Yasuaki; Uraoka, Yukiharu; Ito, Seigo

    2014-01-01

    The phosphorus barrier layers at the doping procedure of silicon wafers were fabricated using a spin-coating method with a mixture of silica-sol and tetramethylammonium hydroxide, which can be formed at the rear surface prior to the front phosphorus spin-on-demand (SOD) diffusion and directly annealed simultaneously with the front phosphorus layer. The optimization of coating thickness was obtained by changing the applied spin-coating speed; from 2,000 to 8,000 rpm. The CZ-Si p-type silicon solar cells were fabricated with/without using the rear silica-sol layer after taking the sheet resistance measurements, SIMS analysis, and SEM measurements of the silica-sol material evaluations into consideration. For the fabrication of solar cells, a spin-coating phosphorus source was used to form the n(+) emitter and was then diffused at 930°C for 35 min. The out-gas diffusion of phosphorus could be completely prevented by spin-coated silica-sol film placed on the rear side of the wafers coated prior to the diffusion process. A roughly 2% improvement in the conversion efficiency was observed when silica-sol was utilized during the phosphorus diffusion step. These results can suggest that the silica-sol material can be an attractive candidate for low-cost and easily applicable spin-coating barrier for any masking purpose involving phosphorus diffusion.

  18. Silica-sol-based spin-coating barrier layer against phosphorous diffusion for crystalline silicon solar cells

    NASA Astrophysics Data System (ADS)

    Uzum, Abdullah; Fukatsu, Ken; Kanda, Hiroyuki; Kimura, Yutaka; Tanimoto, Kenji; Yoshinaga, Seiya; Jiang, Yunjian; Ishikawa, Yasuaki; Uraoka, Yukiharu; Ito, Seigo

    2014-12-01

    The phosphorus barrier layers at the doping procedure of silicon wafers were fabricated using a spin-coating method with a mixture of silica-sol and tetramethylammonium hydroxide, which can be formed at the rear surface prior to the front phosphorus spin-on-demand (SOD) diffusion and directly annealed simultaneously with the front phosphorus layer. The optimization of coating thickness was obtained by changing the applied spin-coating speed; from 2,000 to 8,000 rpm. The CZ-Si p-type silicon solar cells were fabricated with/without using the rear silica-sol layer after taking the sheet resistance measurements, SIMS analysis, and SEM measurements of the silica-sol material evaluations into consideration. For the fabrication of solar cells, a spin-coating phosphorus source was used to form the n+ emitter and was then diffused at 930°C for 35 min. The out-gas diffusion of phosphorus could be completely prevented by spin-coated silica-sol film placed on the rear side of the wafers coated prior to the diffusion process. A roughly 2% improvement in the conversion efficiency was observed when silica-sol was utilized during the phosphorus diffusion step. These results can suggest that the silica-sol material can be an attractive candidate for low-cost and easily applicable spin-coating barrier for any masking purpose involving phosphorus diffusion.

  19. Silica-sol-based spin-coating barrier layer against phosphorous diffusion for crystalline silicon solar cells

    PubMed Central

    2014-01-01

    The phosphorus barrier layers at the doping procedure of silicon wafers were fabricated using a spin-coating method with a mixture of silica-sol and tetramethylammonium hydroxide, which can be formed at the rear surface prior to the front phosphorus spin-on-demand (SOD) diffusion and directly annealed simultaneously with the front phosphorus layer. The optimization of coating thickness was obtained by changing the applied spin-coating speed; from 2,000 to 8,000 rpm. The CZ-Si p-type silicon solar cells were fabricated with/without using the rear silica-sol layer after taking the sheet resistance measurements, SIMS analysis, and SEM measurements of the silica-sol material evaluations into consideration. For the fabrication of solar cells, a spin-coating phosphorus source was used to form the n+ emitter and was then diffused at 930°C for 35 min. The out-gas diffusion of phosphorus could be completely prevented by spin-coated silica-sol film placed on the rear side of the wafers coated prior to the diffusion process. A roughly 2% improvement in the conversion efficiency was observed when silica-sol was utilized during the phosphorus diffusion step. These results can suggest that the silica-sol material can be an attractive candidate for low-cost and easily applicable spin-coating barrier for any masking purpose involving phosphorus diffusion. PMID:25520602

  20. Effect of Layer-Graded Bond Coats on Edge Stress Concentration and Oxidation Behavior of Thermal Barrier Coatings

    NASA Technical Reports Server (NTRS)

    Zhu, Dongming; Ghosn, Louis J.; Miller, Robert A.

    1998-01-01

    Thermal barrier coating (TBC) durability is closely related to design, processing and microstructure of the coating Z, tn systems. Two important issues that must be considered during the design of a thermal barrier coating are thermal expansion and modulus mismatch between the substrate and the ceramic layer, and substrate oxidation. In many cases, both of these issues may be best addressed through the selection of an appropriate bond coat system. In this study, a low thermal expansion and layer-graded bond coat system, that consists of plasma-sprayed FeCoNiCrAl and FeCrAlY coatings, and a high velocity oxyfuel (HVOF) sprayed FeCrAlY coating, is developed to minimize the thermal stresses and provide oxidation resistance. The thermal expansion and oxidation behavior of the coating system are also characterized, and the strain isolation effect of the bond coat system is analyzed using the finite element method (FEM). Experiments and finite element results show that the layer-graded bond coat system possesses lower interfacial stresses. better strain isolation and excellent oxidation resistance. thus significantly improving the coating performance and durability.

  1. Electrically Tunable and Negative Schottky Barriers in Multi-layered Graphene/MoS2 Heterostructured Transistors

    PubMed Central

    Qiu, Dongri; Kim, Eun Kyu

    2015-01-01

    We fabricated multi-layered graphene/MoS2 heterostructured devices by positioning mechanically exfoliated bulk graphite and single-crystalline 2H-MoS2 onto Au metal pads on a SiO2/Si substrate via a contamination-free dry transfer technique. We also studied the electrical transport properties of Au/MoS2 junction devices for systematic comparison. A previous work has demonstrated the existence of a positive Schottky barrier height (SBH) in the metal/MoS2 system. However, analysis of the SBH indicates that the contacts of the multi-layered graphene/MoS2 have tunable negative barriers in the range of 300 to −46 meV as a function of gate voltage. It is hypothesized that this tunable SBH is responsible for the modulation of the work function of the thick graphene in these devices. Despite the large number of graphene layers, it is possible to form ohmic contacts, which will provide new opportunities for the engineering of highly efficient contacts in flexible electronics and photonics. PMID:26333680

  2. Perpendicular magnetic tunnel junctions with double barrier and single or synthetic antiferromagnetic storage layer

    SciTech Connect

    Cuchet, Léa; Rodmacq, Bernard; Auffret, Stéphane; Sousa, Ricardo C.; Prejbeanu, Ioan L.; Dieny, Bernard

    2015-06-21

    The magnetic properties of double tunnel junctions with perpendicular anisotropy were investigated. Two synthetic antiferromagnetic references are used, while the middle storage magnetic layer can be either a single ferromagnetic or a synthetic antiferromagnetic FeCoB-based layer, with a critical thickness as large as 3.0 nm. Among the different achievable magnetic configurations in zero field, those with either antiparallel references, and single ferromagnetic storage layer, or parallel references, and synthetic antiferromagnetic storage layer, are of particular interest since they allow increasing the efficiency of spin transfer torque writing and the thermal stability of the stored information as compared to single tunnel junctions. The latter configuration can be preferred when stray fields would favour a parallel orientation of the reference layers. In this case, the synthetic antiferromagnetic storage layer is also less sensitive to residual stray fields.

  3. Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices

    DOEpatents

    Jie, Qing; Ren, Zhifeng; Chen, Gang

    2015-12-08

    Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi.sub.2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi.sub.2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer "second layer" disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 .mu..OMEGA.cm.sup.2.

  4. Formation and investigation of ultrathin layers of Co2FeSi ferromagnetic alloy synthesized on silicon covered with a CaF2 barrier layer

    NASA Astrophysics Data System (ADS)

    Grebenyuk, G. S.; Gomoyunova, M. V.; Pronin, I. I.; Vyalikh, D. V.; Molodtsov, S. L.

    2016-03-01

    Ultrathin (∼2 nm) films of Co2FeSi ferromagnetic alloy were formed on silicon by solid-phase epitaxy and studied in situ. Experiments were carried out in an ultrahigh vacuum (UHV) using substrates of Si(1 1 1) single crystals covered with a 5 nm thick CaF2 barrier layer. The elemental and phase composition as well as the magnetic properties of the synthesized films were analyzed by photoelectron spectroscopy using synchrotron radiation and by magnetic linear dichroism in photoemission of Fe 3p and Co 3p electrons. The study shows that the synthesis of the Co2FeSi ferromagnetic alloy occurs in the temperature range of 200-400 °C. At higher temperatures, the films become island-like and lose their ferromagnetic properties, as the CaF2 barrier layer is unable to prevent a mass transfer between the film and the Si substrate, which violates the stoichiometry of the alloy.

  5. DFT simulations of inter-graphene-layer coupling with rotationally misaligned hBN tunnel barriers in graphene/hBN/graphene tunnel FETs

    NASA Astrophysics Data System (ADS)

    Valsaraj, Amithraj; Register, Leonard F.; Tutuc, Emanuel; Banerjee, Sanjay K.

    2016-10-01

    Van der Waal's heterostructures allow for novel devices such as two-dimensional-to-two-dimensional tunnel devices, exemplified by interlayer tunnel FETs. These devices employ channel/tunnel-barrier/channel geometries. However, during layer-by-layer exfoliation of these multi-layer materials, rotational misalignment is the norm and may substantially affect device characteristics. In this work, by using density functional theory methods, we consider a reduction in tunneling due to weakened coupling across the rotationally misaligned interface between the channel layers and the tunnel barrier. As a prototypical system, we simulate the effects of rotational misalignment of the tunnel barrier layer between aligned channel layers in a graphene/hBN/graphene system. We find that the rotational misalignment between the channel layers and the tunnel barrier in this van der Waal's heterostructure can significantly reduce coupling between the channels by reducing, specifically, coupling across the interface between the channels and the tunnel barrier. This weakened coupling in graphene/hBN/graphene with hBN misalignment may be relevant to all such van der Waal's heterostructures.

  6. Schottky barrier detection devices having a 4H-SiC n-type epitaxial layer

    SciTech Connect

    Mandal, Krishna C.; Terry, J. Russell

    2016-12-06

    A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface cut from planar to about 12.degree.; a buffer epitaxial layer on the substrate surface; a n-type epitaxial layer on the buffer epitaxial layer; and a top contact on the n-type epitaxial layer. The buffer epitaxial layer can include a n-type 4H--SiC epitaxial layer doped at a concentration of about 1.times.10.sup.15 cm.sup.-3 to about 5.times.10.sup.18 cm.sup.-3 with nitrogen, boron, aluminum, or a mixture thereof. The n-type epitaxial layer can include a n-type 4H--SiC epitaxial layer doped at a concentration of about 1.times.10.sup.13 cm.sup.-3 to about 5.times.10.sup.15 cm.sup.-3 with nitrogen. The top contact can have a thickness of about 8 nm to about 15 nm.

  7. Preparation of low-sulfur platinum and platinum aluminide layers in thermal barrier coatings

    NASA Technical Reports Server (NTRS)

    Spitsberg, Irene T. (Inventor); Walston, William S. (Inventor); Schaeffer, Jon C. (Inventor)

    2003-01-01

    A method for preparing a coated nickel-base superalloy article reduces the sulfur content of the surface region of the metallic coating layers to low levels, thereby improving the adhesion of the coating layers to the article. The method includes depositing a first layer of platinum overlying the surface of a substrate, depositing a second layer of aluminum over the platinum, and final desulfurizing the article by heating the article to elevated temperature, preferably in hydrogen, and removing a small amount of material from the surface that was exposed during the step of heating. A ceramic layer may be deposited over the desulfurized article. The article may also be similarly desulfurized at other points in the fabrication procedure.

  8. Thickness scaling effect on interfacial barrier and electrical contact to two-dimensional MoS2 layers.

    PubMed

    Li, Song-Lin; Komatsu, Katsuyoshi; Nakaharai, Shu; Lin, Yen-Fu; Yamamoto, Mahito; Duan, Xiangfeng; Tsukagoshi, Kazuhito

    2014-12-23

    Understanding the interfacial electrical properties between metallic electrodes and low-dimensional semiconductors is essential for both fundamental science and practical applications. Here we report the observation of thickness reduction induced crossover of electrical contact at Au/MoS2 interfaces. For MoS2 thicker than 5 layers, the contact resistivity slightly decreases with reducing MoS2 thickness. By contrast, the contact resistivity sharply increases with reducing MoS2 thickness below 5 layers, mainly governed by the quantum confinement effect. We find that the interfacial potential barrier can be finely tailored from 0.3 to 0.6 eV by merely varying MoS2 thickness. A full evolution diagram of energy level alignment is also drawn to elucidate the thickness scaling effect. The finding of tailoring interfacial properties with channel thickness represents a useful approach controlling the metal/semiconductor interfaces which may result in conceptually innovative functionalities.

  9. MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers

    NASA Astrophysics Data System (ADS)

    Mizunuma, K.; Ikeda, S.; Park, J. H.; Yamamoto, H.; Gan, H.; Miura, K.; Hasegawa, H.; Hayakawa, J.; Matsukura, F.; Ohno, H.

    2009-12-01

    The authors studied an effect of ferromagnetic (Co20Fe60B20 or Fe) layer insertion on tunnel magnetoresistance (TMR) properties of MgO-barrier magnetic tunnel junctions (MTJs) with CoFe/Pd multilayer electrodes. TMR ratio in MTJs with CoFeB/MgO/Fe stack reached 67% at annealing temperature (Ta) of 200 °C and then decreased rapidly at Ta over 250 °C. The degradation of the TMR ratio may be related to crystallization of CoFe(B) into fcc(111) or bcc(011) texture resulting from diffusion of B into Pd layers. MTJs which were in situ annealed at 350 °C just after depositing bottom CoFe/Pd multilayer showed TMR ratio of 78% by postannealing at Ta=200 °C.

  10. Low-temperature gas-barrier films by atomic layer deposition for encapsulating organic light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Tseng, Ming-Hung; Yu, Hui-Huan; Chou, Kun-Yi; Jou, Jwo-Huei; Lin, Kung-Liang; Wang, Chin-Chiun; Tsai, Feng-Yu

    2016-07-01

    Dependences of gas-barrier performance on the deposition temperature of atomic-layer-deposited (ALD) Al2O3, HfO2, and ZnO films were studied to establish low-temperature ALD processes for encapsulating organic light-emitting diodes (OLEDs). By identifying and controlling the key factors, i.e. using H2O2 as an oxidant, laminating Al2O3 with HfO2 or ZnO layers into AHO or AZO nanolaminates, and extending purge steps, OLED-acceptable gas-barrier performance (water vapor transmission rates ˜ 10-6 g m-2 d-1) was achieved for the first time at a low deposition temperature of 50 °C in a thermal ALD mode. The compatibility of the low-temperature ALD process with OLEDs was confirmed by applying the process to encapsulate different types of OLED devices, which were degradation-free upon encapsulation and showed adequate lifetime during accelerated aging tests (pixel shrinkage <5% after 240 h at 60 °C/90% RH).

  11. CdTe nBn photodetectors with ZnTe barrier layer grown on InSb substrates

    NASA Astrophysics Data System (ADS)

    He, Zhao-Yu; Campbell, Calli M.; Lassise, Maxwell B.; Lin, Zhi-Yuan; Becker, Jacob J.; Zhao, Yuan; Boccard, Mathieu; Holman, Zachary; Zhang, Yong-Hang

    2016-09-01

    We have demonstrated an 820 nm cutoff CdTe nBn photodetector with ZnTe barrier layer grown on an InSb substrate. At room temperature, under a bias of -0.1 V, the photodetector shows Johnson and shot noise limited specific detectivity (D*) of 3 × 1013 cm Hz1/2/W at a wavelength of 800 nm and 2 × 1012 cm Hz1/2/W at 200 nm. The D* is optimized by using a top contact design of ITO/undoped-CdTe. This device not only possesses nBn advantageous characteristics, such as generation-recombination dark current suppression and voltage-bias-addressed two-color photodetection, but also offers features including responsivity enhancements by deep-depletion and by using a heterostructure ZnTe barrier layer. In addition, this device provides a platform to study nBn device physics at room temperature, which will help us to understand more sophisticated properties of infrared nBn photodetectors that may possess a large band-to-band tunneling current at a high voltage bias, because this current is greatly suppressed in the large-bandgap CdTe nBn photodetector.

  12. In Situ XPS Chemical Analysis of MnSiO3 Copper Diffusion Barrier Layer Formation and Simultaneous Fabrication of Metal Oxide Semiconductor Electrical Test MOS Structures.

    PubMed

    Byrne, Conor; Brennan, Barry; McCoy, Anthony P; Bogan, Justin; Brady, Anita; Hughes, Greg

    2016-02-03

    Copper/SiO2/Si metal-oxide-semiconductor (MOS) devices both with and without a MnSiO3 barrier layer at the Cu/SiO2 interface have been fabricated in an ultrahigh vacuum X-ray photoelectron spectroscopy (XPS) system, which allows interface chemical characterization of the barrier formation process to be directly correlated with electrical testing of barrier layer effectiveness. Capacitance voltage (CV) analysis, before and after tube furnace anneals of the fabricated MOS structures showed that the presence of the MnSiO3 barrier layer significantly improved electric stability of the device structures. Evidence of improved adhesion of the deposited copper layer to the MnSiO3 surface compared to the clean SiO2 surface was apparent both from tape tests and while probing the samples during electrical testing. Secondary ion mass spectroscopy (SIMS) depth profiling measurements of the MOS test structures reveal distinct differences of copper diffusion into the SiO2 dielectric layers following the thermal anneal depending on the presence of the MnSiO3 barrier layer.

  13. MOCVD growth of AlGaN UV LEDs

    SciTech Connect

    Han, J.; Crawford, M.H.

    1998-09-01

    Issues related to the MOCVD growth of AlGaN, specifically the gas-phase parasitic reactions among TMG, TMA, and NH{sub 3}, are studied using an in-situ optical reflectometer. It is observed that the presence of the well-known gas phase adduct (TMA: NH{sub 3}) could seriously hinder the incorporation behavior of TMGa. Relatively low reactor pressures (30--50 Torr) are employed to grow an AlGaN/GaN SCH QW p-n diode structure. The UV emission at 360 nm (FWHM {approximately} 10 nm) represents the first report of LED operation from an indium-free GaN QW diode.

  14. MEANS II: Knowledge Oriented Materials Engineering of Layered Thermal Barrier Systems (NOMELT)

    DTIC Science & Technology

    2008-06-22

    metallic bond coat (BC) interlayer between the superalloy substrate and the thermally insulating ceramic top layer. The primary purpose of the BC layer...overlay coatings . An advantage of overlay coatings is that a specific composition can be placed on the superalloy surface without significant initial...deposited on a 2nd generation single crystal PWA1484 superalloy substrate. The NiCoCrAlY bond coat with nominal composition in Table 1 [19] was

  15. In situ determination of the pore opening point during wet-chemical etching of the barrier layer of porous anodic aluminum oxide: nonuniform impurity distribution in anodic oxide.

    PubMed

    Han, Hee; Park, Sang-Joon; Jang, Jong Shik; Ryu, Hyun; Kim, Kyung Joong; Baik, Sunggi; Lee, Woo

    2013-04-24

    Wet-chemical etching of the barrier oxide layer of anodic aluminum oxide (AAO) was systematically investigated by using scanning electron microscopy (SEM), secondary ion mass spectrometry (SIMS), and a newly devised experimental setup that allows accurate in situ determination of the pore opening point during chemical etching of the barrier oxide layer. We found that opening of the barrier oxide layer by wet-chemical etching can be significantly influenced by anodization time (tanodi). According to secondary ion mass spectrometry (SIMS) analysis, porous anodic aluminum oxide (AAO) samples formed by long-term anodization contained a lower level of anionic impurity in the barrier oxide layer compared to the short-term anodized one and consequently exhibited retarded opening of the barrier oxide layer during the wet-chemical etching. The observed compositional dependence on the anodization time (tanodi) in the barrier oxide layer is attributed to the progressive decrease of the electrolyte concentration upon anodization. The etching rate of the outer pore wall at the bottom part is lower than that of the one at the top part due to the lower level of impurity content in that region. This indicates that a concentration gradient of anionic impurity in the outer pore wall oxide may be established along both the vertical and radial directions of cylindrical pores. Apart from the effect of electrolyte concentration on the chemical composition of the barrier oxide layer, significantly decreased current density arising from the lowered concentration of electrolyte during the long-term anodization (~120 h) was found to cause disordering of pores. The results of the present work are expected to provide viable information not only for practical applications of nanoporous AAO in nanotechnology but also for thorough understanding of the self-organized formation of oxide nanopores during anodization.

  16. Diffusion barriers

    NASA Technical Reports Server (NTRS)

    Nicolet, M. A.

    1983-01-01

    The choice of the metallic film for the contact to a semiconductor device is discussed. One way to try to stabilize a contact is by interposing a thin film of a material that has low diffusivity for the atoms in question. This thin film application is known as a diffusion barrier. Three types of barriers can be distinguished. The stuffed barrier derives its low atomic diffusivity to impurities that concentrate along the extended defects of a polycrystalline layer. Sacrificial barriers exploit the fact that some (elemental) thin films react in a laterally uniform and reproducible fashion. Sacrificial barriers have the advantage that the point of their failure is predictable. Passive barriers are those most closely approximating an ideal barrier. The most-studied case is that of sputtered TiN films. Stuffed barriers may be viewed as passive barriers whose low diffusivity material extends along the defects of the polycrystalline host.

  17. Barrier efficiency of sponge-like La2Zr2O7 buffer layers for YBCO-coated conductors

    NASA Astrophysics Data System (ADS)

    Molina, Leopoldo; Tan, Haiyan; Biermans, Ellen; Batenburg, Kees J.; Verbeeck, Jo; Bals, Sara; Van Tendeloo, Gustaaf

    2011-06-01

    Solution derived La2Zr2O7 films have drawn much attention for potential applications as thermal barriers or low-cost buffer layers for coated conductor technology. Annealing and coating parameters strongly affect the microstructure of La2Zr2O7, but different film processing methods can yield similar microstructural features such as nanovoids and nanometer-sized La2Zr2O7 grains. Nanoporosity is a typical feature found in such films and the implications for the functionality of the films are investigated by a combination of scanning transmission electron microscopy (STEM), electron energy-loss spectroscopy (EELS) and quantitative electron tomography. Chemical solution based La2Zr2O7 films deposited on flexible Ni-5 at.%W substrates with a {100}lang001rang biaxial texture were prepared for an in-depth characterization. A sponge-like structure composed of nanometer-sized voids is revealed by high-angle annular dark-field scanning transmission electron microscopy in combination with electron tomography. A three-dimensional quantification of nanovoids in the La2Zr2O7 film is obtained on a local scale. Mostly non-interconnected highly faceted nanovoids compromise more than one-fifth of the investigated sample volume. The diffusion barrier efficiency of a 170 nm thick La2Zr2O7 film is investigated by STEM-EELS, yielding a 1.8 ± 0.2 nm oxide layer beyond which no significant nickel diffusion can be detected and intermixing is observed. This is of particular significance for the functionality of YBa2Cu3O7 - δ coated conductor architectures based on solution derived La2Zr2O7 films as diffusion barriers.

  18. Molecular beam epitaxy growth of Al-rich AlGaN nanowires for deep ultraviolet optoelectronics

    NASA Astrophysics Data System (ADS)

    Zhao, S.; Woo, S. Y.; Sadaf, S. M.; Wu, Y.; Pofelski, A.; Laleyan, D. A.; Rashid, R. T.; Wang, Y.; Botton, G. A.; Mi, Z.

    2016-08-01

    Self-organized AlGaN nanowires by molecular beam epitaxy have attracted significant attention for deep ultraviolet optoelectronics. However, due to the strong compositional modulations under conventional nitrogen rich growth conditions, emission wavelengths less than 250 nm have remained inaccessible. Here we show that Al-rich AlGaN nanowires with much improved compositional uniformity can be achieved in a new growth paradigm, wherein a precise control on the optical bandgap of ternary AlGaN nanowires can be achieved by varying the substrate temperature. AlGaN nanowire LEDs, with emission wavelengths spanning from 236 to 280 nm, are also demonstrated.

  19. Measurement and simulation of top- and bottom-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors with high external quantum efficiencies

    SciTech Connect

    Brendel, Moritz Helbling, Markus; Knigge, Andrea; Brunner, Frank; Weyers, Markus

    2015-12-28

    A comprehensive study on top- and bottom-illuminated Al{sub 0.5}Ga{sub 0.5}N/AlN metal-semiconductor-metal (MSM) photodetectors having different AlGaN absorber layer thickness is presented. The measured external quantum efficiency (EQE) shows pronounced threshold and saturation behavior as a function of applied bias voltage up to 50 V reaching about 50% for 0.1 μm and 67% for 0.5 μm thick absorber layers under bottom illumination. All experimental findings are in very good accordance with two-dimensional drift-diffusion modeling results. By taking into account macroscopic polarization effects in the hexagonal metal-polar +c-plane AlGaN/AlN heterostructures, new insights into the general device functionality of AlGaN-based MSM photodetectors are obtained. The observed threshold/saturation behavior is caused by a bias-dependent extraction of photoexcited holes from the Al{sub 0.5}Ga{sub 0.5}N/AlN interface. While present under bottom illumination for any AlGaN layer thickness, under top illumination this mechanism influences the EQE-bias characteristics only for thin layers.

  20. Catalytic activity of enzymes immobilized on AlGaN /GaN solution gate field-effect transistors

    NASA Astrophysics Data System (ADS)

    Baur, B.; Howgate, J.; von Ribbeck, H.-G.; Gawlina, Y.; Bandalo, V.; Steinhoff, G.; Stutzmann, M.; Eickhoff, M.

    2006-10-01

    Enzyme-modified field-effect transistors (EnFETs) were prepared by immobilization of penicillinase on AlGaN /GaN solution gate field-effect transistors. The influence of the immobilization process on enzyme functionality was analyzed by comparing covalent immobilization and physisorption. Covalent immobilization by Schiff base formation on GaN surfaces modified with an aminopropyltriethoxysilane monolayer exhibits high reproducibility with respect to the enzyme/substrate affinity. Reductive amination of the Schiff base bonds to secondary amines significantly increases the stability of the enzyme layer. Electronic characterization of the EnFET response to penicillin G indicates that covalent immobilization leads to the formation of an enzyme (sub)monolayer.

  1. Study of the Linewidths of Excitonic Luminescence Transitions in AlGaN Alloys

    NASA Astrophysics Data System (ADS)

    Bajaj, K. K.; Coli, Giuliano; Li, J.; Lin, Jingyu; Jiang, H. X.

    2001-03-01

    We have investigated the linewidth of excitonic photoluminescence transitions at 10 K and as a function of Al concentration in AlGaN alloys grown by low-pressure metal organic chemical vapor deposition on (0001) oriented sapphire substrates, with low-temperature GaN buffer layers. Al composition ranged from 0 to 35 percent. By means of a lineshape analysis of the excitonic transition we identify the contribution of the compositional disorder in the alloy to the excitonic linewidth and find that the values of the excitonic linewidths in our samples are considerably smaller than those reported recently[1]. These values of the excitonic linewidths, as expected, increase as a function of Al concentration and agree very well with those calculated by a model presented by Lee and Bajaj[2]. [1] G. Steude, B.K. Meyer, A. Göldner, A. Hoffmann, F. Bertram, J.Christen, H. Amano and I. Akasaki, Appl. Phys. Lett 74, 2456 (1999) [2] S. M. Lee and K. K. Bajaj, J. Appl. Phys. 73, 1788 (1993)

  2. Performance enhancement of blue light-emitting diodes with InGaN/GaN multi-quantum wells grown on Si substrates by inserting thin AlGaN interlayers

    NASA Astrophysics Data System (ADS)

    Kimura, Shigeya; Yoshida, Hisashi; Uesugi, Kenjiro; Ito, Toshihide; Okada, Aoi; Nunoue, Shinya

    2016-09-01

    We have grown blue light-emitting diodes (LEDs) having InGaN/GaN multi-quantum wells (MQWs) with thin AlyGa1-yN (0 < y < 0.3) interlayers on Si(111) substrates. It was found by high-resolution transmission electron microscopy observations and three-dimensional atom probe analysis that 1-nm-thick interlayers with an AlN mole fraction of less than y = 0.3 were continuously formed between GaN barriers and InGaN wells, and that the AlN mole fraction up to y = 0.15 could be consistently controlled. The external quantum efficiency of the blue LED was enhanced in the low-current-density region (≤45 A/cm2) but reduced in the high-current-density region by the insertion of the thin Al0.15Ga0.85N interlayers in the MQWs. We also found that reductions in both forward voltage and wavelength shift with current were achieved by inserting the interlayers even though the inserted AlGaN layers had potential higher than that of the GaN barriers. The obtained peak wall-plug efficiency was 83% at room temperature. We suggest that the enhanced electroluminescence (EL) performance was caused by the introduction of polarization-induced hole carriers in the InGaN wells on the side adjacent to the thin AlGaN/InGaN interface and efficient electron carrier transport through multiple wells. This model is supported by temperature-dependent EL properties and band-diagram simulations. We also found that inserting the interlayers brought about a reduction in the Shockley-Read-Hall nonradiative recombination component, corresponding to the shrinkage of V-defects. This is another conceivable reason for the observed performance enhancement.

  3. Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlattices

    PubMed Central

    Zheng, T. C.; Lin, W.; Liu, R.; Cai, D. J.; Li, J. C.; Li, S. P.; Kang, J. Y.

    2016-01-01

    A novel multidimensional Mg-doped superlattice (SL) is proposed to enhance vertical hole conductivity in conventional Mg-doped AlGaN SL which generally suffers from large potential barrier for holes. Electronic structure calculations within the first-principle theoretical framework indicate that the densities of states (DOS) of the valence band nearby the Fermi level are more delocalized along the c-axis than that in conventional SL, and the potential barrier significantly decreases. Hole concentration is greatly enhanced in the barrier of multidimensional SL. Detailed comparisons of partial charges and decomposed DOS reveal that the improvement of vertical conductance may be ascribed to the stronger pz hybridization between Mg and N. Based on the theoretical analysis, highly conductive p-type multidimensional Al0.63Ga0.37N/Al0.51Ga0.49N SLs are grown with identified steps via metalorganic vapor-phase epitaxy. The hole concentration reaches up to 3.5 × 1018 cm−3, while the corresponding resistivity reduces to 0.7 Ω cm at room temperature, which is tens times improvement in conductivity compared with that of conventional SLs. High hole concentration can be maintained even at 100 K. High p-type conductivity in Al-rich structural material is an important step for the future design of superior AlGaN-based deep ultraviolet devices. PMID:26906334

  4. Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic

    NASA Astrophysics Data System (ADS)

    Lei, Wenwen; Li, Xingcun; Chen, Qiang; Wang, Zhengduo

    2012-02-01

    Atomic layer deposition (ALD) technique is used in the preparation of organic/inorganic layers, which requires uniform surfaces with their thickness down to several nanometers. For film with such thickness, the growth mode defined as the arrangement of clusters on the surface during the growth is of significance. In this work, Al2O3 thin film was deposited on various interfacial species of pre-treated polyethylene terephthalate (PET, 12 μm) by plasma assisted atomic layer deposition (PA-ALD), where trimethyl aluminium was used as the Al precursor and O2 as the oxygen source. The interfacial species, -NH3, -OH, and -COOH as well as SiCHO (derived from monomer of HMDSO plasma), were grafted previously by plasma and chemical treatments. The growth mode of PA-ALD Al2O3 was then investigated in detail by combining results from in-situ diagnosis of spectroscopic ellipsometry (SE) and ex-situ characterization of as-deposited layers from the morphologies scanned by atomic force microscopy (AFM). In addition, the oxygen transmission rates (OTR) of the original and treated plastic films were measured. The possible reasons for the dependence of the OTR values on the surface species were explored.

  5. Tunnel barrier enhanced voltage signals generated by magnetization precession of a single ferromagnetic layer

    NASA Astrophysics Data System (ADS)

    Moriyama, Takahiro

    2009-03-01

    A variety of experimentally observed phenomena involving nonlocal magnetization dynamics in magnetic multilayers are due to two complementary effects: (i) the transfer of spin angular momentum accompanying charge currents driven by the applied bias voltage between ferromagnetic layers results in torques that (for sufficiently high current densities) generate spontaneous magnetization precession and switching; and (ii) the precessing magnetization of a ferromagnet (FM) pumps spins into adjacent normal metal layers (NM) with no applied bias. In particular, the spin pumping effect is a promising candidate for realizing a spin battery device [1] as a source of elusive pure spin currents (not accompanied by any net charge transport) emitted at the FM/NM interface, where steady magnetization precession of the FM layer is sustained by the absorption of external rf radiation under the FMR conditions. We report the electrical detection of magnetization dynamics in an Al/AlOx/Ni80Fe20/Cu tunnel junction, where a Ni80Fe20 ferromagnetic layer is brought into precession under the ferromagnetic resonance (FMR) conditions. The dc voltage generated across the junction by the precessing ferromagnet is enhanced about an order of magnitude compared to the voltage signal observed in Cu/FeNi/Pt structures [2]. A structure of Cu (100nm)/Al (10nm)/AlOx (2.3nm)/Ni80Fe20 (20nm)/Cu (70nm)/Au (25nm) was fabricated on a Si substrate with a 1μm thick thermal oxide layer. The bottom-most 100 nm Cu layer was patterned into a coplanar waveguide (CPW) and the rest of the structure was patterned into a pillar structure on the signal line of the CPW. Dc voltages ˜μV were observed in the Al/AlOx/Ni80Fe20/Cu tunnel junction when the Ni80Fe20 is in the ferromagnetic resonance. The dc voltages increase as the precession cone angle and frequency increase. We discuss the relation of this phenomenon to magnetic spin pumping and speculate on other possible underlying mechanisms responsible for the

  6. Thermoelastic characteristics of thermal barrier coatings with layer thickness and edge conditions through mathematical analysis.

    PubMed

    Go, Jaegwi; Myoung, Sang-Won; Lee, Je-Hyun; Jung, Yeon-Gil; Kim, Seokchan; Paik, Ungyu

    2014-10-01

    The thermoelastic behaviors of such as temperature distribution, displacements, and stresses in thermal barrier coatings (TBCs) are seriously influenced by top coat thickness and edge conditions, which were investigated based on the thermal and mechanical properties of plasma-sprayed TBCs. A couple of governing partial differential equations were derived based on the thermoelastic theory. Since the governing equations are too involved to solve analytically, a finite volume method was developed to obtain approximations. The thermoelastic characteristics of TBCs with the various thicknesses and microstructures were estimated through mathematical approaches with different edge conditions. The results demonstrated that the top coat thickness and the edge condition in theoretical analysis are crucial factors to be considered in controlling the thermoelastic characteristics of plasma-sprayed TBCs.

  7. On the optimization of asymmetric barrier layers in InAlGaAs/AlGaAs laser heterostructures on GaAs substrates

    SciTech Connect

    Zhukov, A. E.; Asryan, L. V.; Semenova, E. S.; Zubov, F. I.; Kryzhanovskaya, N. V.; Maximov, M. V.

    2015-07-15

    Band offsets at the heterointerface are calculated for various combinations of InAlGaAs/AlGaAs heteropairs that can be synthesized on GaAs substrates in the layer-by-layer pseudomorphic growth mode. Patterns which make it possible to obtain an asymmetric barrier layer providing the almost obstruction-free transport of holes and the highest possible barrier height for electrons are found. The optimal compositions of both compounds (In{sup 0.232}Al{sup 0.594}Ga{sup 0.174}As/Al{sup 0.355}Ga{sup 0.645}As) at which the flux of electrons across the barrier is at a minimum are determined with consideration for the critical thickness of the indium-containing quaternary solid solution.

  8. The origin of low water vapor transmission rates through Al2O3/ZrO2 nanolaminate gas-diffusion barriers grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Meyer, J.; Schmidt, H.; Kowalsky, W.; Riedl, T.; Kahn, A.

    2010-06-01

    This paper reports on thin film gas-diffusion barriers consisting of Al2O3/ZrO2 nanolaminates (NL) grown by low-temperature (80 °C) atomic layer deposition. We show that reliable barriers with water vapor transmission rates of 3.2×10-4 g/(m2 day), measured at 80 °C and 80% relative humidity, can be realized with very thin layers down to 40 nm. We determine that ZrO2 acts as anticorrosion element in our NL. Furthermore, we demonstrate by x-ray photoemission spectroscopy that an aluminate phase is formed at the interfaces between Al2O3 and ZrO2 sublayers, which additionally improves the gas-diffusion barrier due to a densification of the layer system. These Al2O3/ZrO2 NLs prepared at low temperatures hold considerable promises for application in organic electronics and beyond.

  9. Nanometer-thick amorphous-SnO2 layer as an oxygen barrier coated on a transparent AZO electrode

    NASA Astrophysics Data System (ADS)

    Lee, Hee Sang; Woo, Seong Ihl

    2016-07-01

    It is necessary for transparent conducting electrodes used in dye-sensitized or perovskite solar cells to have high thermal stability which is required when TiO2 is coated on the electrode. AZO films with their low-cost and good TCO properties are unfortunately unstable above 300 °C in air because of adsorbed oxygen. In this paper, the thermal stability of AZO films is enhanced by depositing an oxygen barrier on AZO films to block the oxygen. As the barrier material, SnO2 is used due to its high heat stability, electrical conductivity, and transmittance. Moreover, when the SnO2 is grown as amorphous phase, the protective effect become greater than the crystalline phase. The thermal stability of the amorphous-SnO2/AZO films varies depending on the thickness of the amorphous SnO2 layer. Because of the outstanding oxygen blocking properties of amorphous SnO2, its optimal thickness is very thin and it results in only a slight decrease in transmittance. The sheet resistance of the amorphous-SnO2/AZO film is 5.4 Ω sq-1 after heat treatment at 500 °C for 30 min in air and the average transmittance in the visible region is 83.4%. The results show that the amorphous-SnO2/AZO films have thermal stability with excellent electrical and optical properties. [Figure not available: see fulltext.

  10. Annual layers revealed by GPR in the subsurface of a prograding coastal barrier, southwest Washington, U.S.A

    USGS Publications Warehouse

    Moore, L.J.; Jol, H.M.; Kruse, S.; Vanderburgh, S.; Kaminsky, G.M.

    2004-01-01

    The southwest Washington coastline has experienced extremely high rates of progradation during the late Holocene. Subsurface stratigraphy, preserved because of progradation and interpreted using ground-penetrating radar (GPR), has previously been used successfully to document coastal response to prehistoric storm and earthquake events. New GPR data collected at Ocean Shores, Washington, suggest that the historic stratigraphy of the coastal barrier in this area represents a higher resolution record of coastal behavior than previously thought. GPR records for this location at 200 MHz reveal a series of gently sloping, seaward-dipping reflections with slopes similar to the modern beach and spacings on the order of 20-45 cm. Field evidence and model results suggest that thin (1-10 cm), possibly magnetite-rich, heavy-mineral lags or low-porosity layers left by winter storms and separated by thick (20-40 cm) summer progradational sequences are responsible for generating the GPR reflections. These results indicate that a record of annual progradation is preserved in the subsurface of the prograding barrier and can be quantified using GPR. Such records of annual coastal behavior, where available, will be invaluable in understanding past coastal response to climatic and tectonic forcing. ?? 2004.

  11. Microstructure of Josephson junctions: Effect on supercurrent transport in YBCO grain boundary and barrier layer junctions

    SciTech Connect

    Merkle, K.L.; Huang, Y.

    1998-01-01

    The electric transport of high-temperature superconductors, such as YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} (YBCO), can be strongly restricted by the presence of high-angle grain boundaries (GB). This weak-link behavior is governed by the macroscopic GB geometry and the microscopic grain boundary structure and composition at the atomic level. Whereas grain boundaries present a considerable impediment to high current applications of high T{sub c} materials, there is considerable commercial interest in exploiting the weak-link-nature of grain boundaries for the design of microelectronic devices, such as superconducting quantum interference devices (SQUIDs). The Josephson junctions which form the basis of this technology can also be formed by introducing artificial barriers into the superconductor. The authors have examined both types of Josephson junctions by EM techniques in an effort to understand the connection between microstructure/chemistry and electrical transport properties. This knowledge is a valuable resource for the design and production of improved devices.

  12. Polarization-induced electrical conductivity in ultra-wide band gap AlGaN alloys

    NASA Astrophysics Data System (ADS)

    Armstrong, Andrew M.; Allerman, Andrew A.

    2016-11-01

    Unintentionally doped (UID) AlGaN epilayers graded over Al compositions of 80%-90% and 80%-100% were grown by metal organic vapor phase epitaxy and were electrically characterized using contactless sheet resistance (Rsh) and capacitance-voltage (C-V) measurements. Strong electrical conductivity in the UID graded AlGaN epilayers resulted from polarization-induced doping and was verified by the low resistivity of 0.04 Ω cm for the AlGaN epilayer graded over 80%-100% Al mole fraction. A free electron concentration (n) of 4.8 × 1017 cm-3 was measured by C-V for Al compositions of 80%-100%. Average electron mobility ( μ ¯ ) was calculated from Rsh and n data for three ranges of Al composition grading, and it was found that UID AlGaN graded from 88%-96% had μ ¯ = 509 cm2/V s. The combination of very large band gap energy, high μ ¯ , and high n for UID graded AlGaN epilayers make them attractive as a building block for high voltage power electronic devices such as Schottky diodes and field effect transistors.

  13. Ion-assisted gate recess process induced damage in GaN channel of AlGaN/GaN Schottky barrier diodes studied by deep level transient spectroscopy

    NASA Astrophysics Data System (ADS)

    Ferrandis, Philippe; Charles, Matthew; Baines, Yannick; Buckley, Julien; Garnier, Gennie; Gillot, Charlotte; Reimbold, Gilles

    2017-04-01

    Deep traps in AlGaN/GaN Schottky barrier diodes have been investigated using deep level transient spectroscopy. It has been found that ion-assisted gate recess process leads to the formation of electron traps. The defects related to these traps are mainly located in the two-dimensional electron gas channel below the Schottky contact, meaning that the partial etching of the AlGaN layer produces damage on the top of the underlying GaN layer. The activation energies of the electron traps, extracted from the data, range between 0.28 and 0.41 eV. We believe that these centers are complexes linked with nitrogen vacancies which may behave as extended defects.

  14. The mucus layer is critical in protecting against ischemia-reperfusion-mediated gut injury and in the restitution of gut barrier function.

    PubMed

    Qin, Xiaofa; Sheth, Sharvil U; Sharpe, Susan M; Dong, Wei; Lu, Qi; Xu, Dazhong; Deitch, Edwin A

    2011-03-01

    It is well documented that the gut injury plays a critical role in the development of systemic inflammation and distant organ injury in conditions associated with splanchnic ischemia. Consequently, understanding the mechanisms leading to gut injury is important. In this context, recent work suggests a protective role for the intestinal mucus layer and an injury-inducing role for luminal pancreatic proteases. Thus, we explored the role of the mucus layer in gut barrier function by observing how the removal of the mucus layer affects ischemia-reperfusion-mediated gut injury in rats as well as the potential role of luminal pancreatic proteases in the pathogenesis of gut injury. Ischemia was induced by the ligation of blood vessels to segments of the ileum for 45 min, followed by up to 3 h of reperfusion. The ileal segments were divided into five groups. These included a nonischemic control, ischemic segments exposed to saline, the mucolytic N-acetylcysteine (NAC), pancreatic proteases, or NAC + pancreatic proteases. Changes in gut barrier function were assessed by the permeation of fluorescein isothiocyanate dextran (molecular weight, 4,000 d) in ileal everted sacs. Gut injury was measured morphologically and by the luminal content of protein, DNA, and hemoglobin. The mucus layer was assessed functionally by measuring its hydrophobicity and morphologically. Gut barrier function was promptly and effectively reestablished during reperfusion, which was accompanied by the restoration of the mucus layer. In contrast, treatment of the gut with the mucolytic NAC for 10 min during ischemia resulted in a failure of mucus restitution and further increases in gut permeability and injury. The presence of digestive proteases by themselves did not exacerbate gut injury, but in combination with NAC, they caused an even greater increase in gut injury and permeability. These results suggest that the mucus layer not only serves as a barrier between the luminal contents and gut surface

  15. Botulinum toxin detection using AlGaN /GaN high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Wang, Yu-Lin; Chu, B. H.; Chen, K. H.; Chang, C. Y.; Lele, T. P.; Tseng, Y.; Pearton, S. J.; Ramage, J.; Hooten, D.; Dabiran, A.; Chow, P. P.; Ren, F.

    2008-12-01

    Antibody-functionalized, Au-gated AlGaN /GaN high electron mobility transistors (HEMTs) were used to detect botulinum toxin. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaN /GaN HEMT drain-source current showed a rapid response of less than 5s when the target toxin in a buffer was added to the antibody-immobilized surface. We could detect a range of concentrations from 1to10ng/ml. These results clearly demonstrate the promise of field-deployable electronic biological sensors based on AlGaN /GaN HEMTs for botulinum toxin detection.

  16. Integration of molecular-layer-deposited aluminum alkoxide interlayers into inorganic nanolaminate barriers for encapsulation of organic electronics with improved stress resistance

    SciTech Connect

    Hossbach, Christoph Fischer, Dustin; Albert, Matthias; Bartha, Johann W.; Nehm, Frederik Klumbies, Hannes; Müller-Meskamp, Lars; Leo, Karl; Singh, Aarti; Richter, Claudia; Schroeder, Uwe; Mikolajick, Thomas

    2015-01-15

    Diffusion barrier stacks for the encapsulation of organic electronics made from inorganic nanolaminates of Al{sub 2}O{sub 3} and TiO{sub 2} with aluminum alkoxide interlayers have been deposited by atomic layer deposition (ALD) and molecular layer deposition (MLD). As a part of the MLD process development, the deposition of aluminum alkoxide with low a density of about 1.7 g/cm{sup 3} was verified. The ALD/MLD diffusion barrier stack is meant to be deposited either on a polymer film, creating a flexible barrier substrate, or on top of a device on glass, creating a thin-film encapsulation. In order to measure the water vapor transmission rate (WVTR) through the barrier, the device is replaced by a calcium layer acting as a water sensor in an electrical calcium test. For the barrier stack applied as thin-film encapsulation on glass substrates, high resolution scanning electron microscopy investigations indicate that the inorganic nanolaminates without MLD interlayers are brittle as they crack easily upon the stress induced by the corroding calcium below. The introduction of up to three MLD interlayers of 12 nm each into the 48 nm barrier film laminate successfully mitigates stress issues and prevents the barrier from cracking. Using the three MLD interlayer configurations on glass, WVTRs of as low as 10{sup −5} g/m{sup 2}/d are measured at 38 °C and 32% relative humidity. On polymer barrier substrates, the calcium is evaporated onto the barrier stack and encapsulated with a cavity glass. In this configuration, the corroding calcium has space for expansion and gas release without affecting the underlying barrier film. In consequence, a WVTR of about 3 × 10{sup −3} g/m{sup 2}/d is measured for all samples independently of the number of MLD interlayers. In conclusion, a stabilization and preservation of the ALD barrier film against mechanical stress is achieved by the introduction of MLD interlayers into the inorganic nanolaminate.

  17. Multilayer moisture barrier

    DOEpatents

    Pankow, Joel W; Jorgensen, Gary J; Terwilliger, Kent M; Glick, Stephen H; Isomaki, Nora; Harkonen, Kari; Turkulainen, Tommy

    2015-04-21

    A moisture barrier, device or product having a moisture barrier or a method of fabricating a moisture barrier having at least a polymer layer, and interfacial layer, and a barrier layer. The polymer layer may be fabricated from any suitable polymer including, but not limited to, fluoropolymers such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), or ethylene-tetrafluoroethylene (ETFE). The interfacial layer may be formed by atomic layer deposition (ALD). In embodiments featuring an ALD interfacial layer, the deposited interfacial substance may be, but is not limited to, Al.sub.2O.sub.3, AlSiO.sub.x, TiO.sub.2, and an Al.sub.2O.sub.3/TiO.sub.2 laminate. The barrier layer associated with the interfacial layer may be deposited by plasma enhanced chemical vapor deposition (PECVD). The barrier layer may be a SiO.sub.xN.sub.y film.

  18. Large-Format AlGaN PIN Photodiode Arrays for UV Images

    NASA Technical Reports Server (NTRS)

    Aslam, Shahid; Franz, David

    2010-01-01

    A large-format hybridized AlGaN photodiode array with an adjustable bandwidth features stray-light control, ultralow dark-current noise to reduce cooling requirements, and much higher radiation tolerance than previous technologies. This technology reduces the size, mass, power, and cost of future ultraviolet (UV) detection instruments by using lightweight, low-voltage AlGaN detectors in a hybrid detector/multiplexer configuration. The solar-blind feature eliminates the need for additional visible light rejection and reduces the sensitivity of the system to stray light that can contaminate observations.

  19. AlGaN Channel Transistors for Power Management and Distribution

    NASA Technical Reports Server (NTRS)

    VanHove, James M.

    1996-01-01

    Contained within is the Final report of a Phase 1 SBIR program to develop AlGaN channel junction field effect transistors (JFET). The report summarizes our work to design, deposit, and fabricate JFETS using molecular beam epitaxy growth AlGaN. Nitride growth is described using a RF atomic nitrogen plasma source. Processing steps needed to fabricate the device such as ohmic source-drain contacts, reactive ion etching, gate formation, and air bride fabrication are documented. SEM photographs of fabricated power FETS are shown. Recommendations are made to continue the effort in a Phase 2 Program.

  20. Low threshold for optical damage in AlGaN epilayers and heterostructures

    SciTech Connect

    Saxena, Tanuj; Tamulaitis, Gintautas; Shatalov, Max; Yang, Jinwei; Gaska, Remis; Shur, Michael S.

    2013-11-28

    Laser pulses with duration much shorter than the effective carrier lifetime cause permanent photoluminescence (PL) quenching and enhancement of PL decay rate in bare-faceted and capped AlGaN epilayers and multiple quantum wells at pulse energies about an order of magnitude lower than those causing the surface to melt and degrade. In contrast, GaN epilayers exhibit no photomodification in the same excitation intensity range. PL spectra and decay kinetics show that lattice heating is not responsible for the observed changes in AlGaN, which result from the formation of nonradiative recombination centers via recombination-enhanced defect reactions occurring at high nonequilibrium carrier densities.

  1. Seasonal variations in the barrier layer in the South China Sea: characteristics, mechanisms and impact of warming

    NASA Astrophysics Data System (ADS)

    Zeng, Lili; Wang, Dongxiao

    2017-03-01

    A new observational dataset, the South China Sea Physical Oceanographic Dataset 2014, is examined to investigate the seasonal characteristics, formation mechanisms, and warming effects of the barrier layer (BL) in the South China Sea (SCS). Statistical analysis reveals that the BL is thicker and occurs more frequently during summer and early autumn, while in winter it often coexists with temperature inversions. The formation mechanisms are discussed from the perspective of the controlling regime and the net turbulent energy required for BL evolution. In the initial stage (March-May), the BL is absent due to weak mixing, scarce rainfall and surface warming. In the formation and maintenance stage (June-September), the BL grows in summer and persists into the transition season. The BLs can be classified into three regimes: the flux regime (in the Luzon Strait), the combined regime (in the eastern basin) and the wind regime (southeast of Vietnam). In the attenuation stage (October-February), associated with the winter monsoon, the BL mainly occurs in the combined regime (along the path of western boundary current) and the flux regime (in the southeast corner). The characteristics and generation mechanisms of the temperature inversions near the south Chinese coast, east of Vietnam, and in the Gulf of Thailand are also discussed. Our analysis further demonstrates that the BL has a significant warming effect on upper ocean temperature and heat content in the SCS.

  2. Seasonal variations in the barrier layer in the South China Sea: characteristics, mechanisms and impact of warming

    NASA Astrophysics Data System (ADS)

    Zeng, Lili; Wang, Dongxiao

    2016-06-01

    A new observational dataset, the South China Sea Physical Oceanographic Dataset 2014, is examined to investigate the seasonal characteristics, formation mechanisms, and warming effects of the barrier layer (BL) in the South China Sea (SCS). Statistical analysis reveals that the BL is thicker and occurs more frequently during summer and early autumn, while in winter it often coexists with temperature inversions. The formation mechanisms are discussed from the perspective of the controlling regime and the net turbulent energy required for BL evolution. In the initial stage (March-May), the BL is absent due to weak mixing, scarce rainfall and surface warming. In the formation and maintenance stage (June-September), the BL grows in summer and persists into the transition season. The BLs can be classified into three regimes: the flux regime (in the Luzon Strait), the combined regime (in the eastern basin) and the wind regime (southeast of Vietnam). In the attenuation stage (October-February), associated with the winter monsoon, the BL mainly occurs in the combined regime (along the path of western boundary current) and the flux regime (in the southeast corner). The characteristics and generation mechanisms of the temperature inversions near the south Chinese coast, east of Vietnam, and in the Gulf of Thailand are also discussed. Our analysis further demonstrates that the BL has a significant warming effect on upper ocean temperature and heat content in the SCS.

  3. Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide

    NASA Astrophysics Data System (ADS)

    Fryauf, David M.; Phillips, Andrew C.; Kobayashi, Nobuhiko P.

    2015-10-01

    Astronomical telescopes continue to demand high-endurance high-reflectivity silver (Ag) mirrors that can withstand years of exposure in Earth-based observatory environments. We present promising results of improved Ag mirror robustness using plasma-enhanced atomic layer deposition (PEALD) of aluminum oxide (AlOx) as a top barrier layer. Transparent AlOx is suitable for many optical applications; therefore, it has been the initial material of choice for this study. Two coating recipes developed with electron beam ion-assisted deposition (e-beam IAD) of materials including yttrium fluoride, titanium nitride, oxides of yttrium, tantalum, and silicon are used to provide variations in basic Ag mirror structures to compare the endurance of reactive e-beam IAD barriers with PEALD barriers. Samples undergo high temperature/high humidity environmental testing in a controlled environment of 80% humidity at 80°C for 10 days. Environmental testing shows visible results suggesting that the PEALD AlOx barrier offers robust protection against chemical corrosion and moisture permeation. Ag mirror structures were further characterized by reflectivity/absorption before and after deposition of AlOx barriers.

  4. The importance of dye chemistry and TiCl4 surface treatment in the behavior of Al2O3 recombination barrier layers deposited by atomic layer deposition in solid-state dye-sensitized solar cells.

    PubMed

    Brennan, Thomas P; Bakke, Jonathan R; Ding, I-Kang; Hardin, Brian E; Nguyen, William H; Mondal, Rajib; Bailie, Colin D; Margulis, George Y; Hoke, Eric T; Sellinger, Alan; McGehee, Michael D; Bent, Stacey F

    2012-09-21

    Atomic layer deposition (ALD) was used to fabricate Al(2)O(3) recombination barriers in solid-state dye-sensitized solar cells (ss-DSSCs) employing an organic hole transport material (HTM) for the first time. Al(2)O(3) recombination barriers of varying thickness were incorporated into efficient ss-DSSCs utilizing the Z907 dye adsorbed onto a 2 μm-thick nanoporous TiO(2) active layer and the HTM spiro-OMeTAD. The impact of Al(2)O(3) barriers was also studied in devices employing different dyes, with increased active layer thicknesses, and with substrates that did not undergo the TiCl(4) surface treatment. In all instances, electron lifetimes (as determined by transient photovoltage measurements) increased and dark current was suppressed after Al(2)O(3) deposition. However, only when the TiCl(4) treatment was eliminated did device efficiency increase; in all other instances efficiency decreased due to a drop in short-circuit current. These results are attributed in the former case to the similar effects of Al(2)O(3) ALD and the TiCl(4) surface treatment whereas the insulating properties of Al(2)O(3) hinder charge injection and lead to current loss in TiCl(4)-treated devices. The impact of Al(2)O(3) barrier layers was unaffected by doubling the active layer thickness or using an alternative ruthenium dye, but a metal-free donor-π-acceptor dye exhibited a much smaller decrease in current due to its higher excited state energy. We develop a model employing prior research on Al(2)O(3) growth and dye kinetics that successfully predicts the reduction in device current as a function of ALD cycles and is extendable to different dye-barrier systems.

  5. In-situ surface and interface study of atomic oxygen modified carbon containing porous low-κ dielectric films for barrier layer applications

    NASA Astrophysics Data System (ADS)

    Bogan, J.; Lundy, R.; P. McCoy, A.; O'Connor, R.; Byrne, C.; Walsh, L.; Casey, P.; Hughes, G.

    2016-09-01

    The surface treatment of ultralow-κ dielectric layers by exposure to atomic oxygen is presented as a potential mechanism to modify the chemical composition of the dielectric surface to facilitate copper diffusion barrier layer formation. High carbon content, low-κ dielectric films of varying porosity were exposed to atomic oxygen treatments at room temperature, and x-ray photoelectron spectroscopy studies reveal both the depletion of carbon and the incorporation of oxygen at the surface. Subsequent dynamic water contact angle measurements show that the chemically modified surfaces become more hydrophilic after treatment, suggesting that the substrates have become more "SiO2-like" at the near surface region. This treatment is shown to be thermally stable up to 400 °C. High resolution electron energy loss spectroscopy elemental profiles confirm the localised removal of carbon from the surface region. Manganese (≈1 nm) was subsequently deposited on the modified substrates and thermally annealed to form surface localized MnSiO3 based barrier layers. The energy-dispersive X-ray spectroscopy elemental maps show that the atomic oxygen treatments facilitate the formation of a continuous manganese silicate barrier within dense low-k films, but significant manganese diffusion is observed in the case of porous substrates, negatively impacting the formation of a discrete barrier layer. Ultimately, the atomic oxygen treatment proves effective in modifying the surface of non-porous dielectrics while continuing to facilitate barrier formation. However, in the case of high porosity films, diffusion of manganese into the bulk film remains a critical issue.

  6. Aluminum incorporation efficiencies in A- and C-plane AlGaN grown by MOVPE

    NASA Astrophysics Data System (ADS)

    Dong-Yue, Han; Hui-Jie, Li; Gui-Juan, Zhao; Hong-Yuan, Wei; Shao-Yan, Yang; Lian-Shan, Wang

    2016-04-01

    The aluminum incorporation efficiencies in nonpolar A-plane and polar C-plane AlGaN films grown by metalorganic vapour phase epitaxy (MOVPE) are investigated. It is found that the aluminum content in A-plane AlGaN film is obviously higher than that in the C-plane sample when the growth temperature is above 1070 °C. The high aluminum incorporation efficiency is beneficial to fabricating deep ultraviolet optoelectronic devices. Moreover, the influences of the gas inlet ratio, the V/III ratio, and the chamber pressure on the aluminum content are studied. The results are important for growing the AlGaN films, especially nonpolar AlGaN epilayers. Project supported by the National Natural Science Foundation of China (Grant Nos. 61504128, 61504129, 61274041, and 11275228), the National Basic Research Program of China (Grant No. 2012CB619305), the National High Technology Research and Development Program of China (Grant Nos. 2014AA032603, 2014AA032609, and 2015AA010801), and the Guangdong Provincial Scientific and Technologic Planning Program, China (Grant No. 2014B010119002).

  7. Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes

    SciTech Connect

    Reich, Christoph Guttmann, Martin; Wernicke, Tim; Mehnke, Frank; Kuhn, Christian; Feneberg, Martin; Goldhahn, Rüdiger; Rass, Jens; Kneissl, Michael; Lapeyrade, Mickael; Einfeldt, Sven; Knauer, Arne; Kueller, Viola; Weyers, Markus

    2015-10-05

    The optical polarization of emission from ultraviolet (UV) light emitting diodes (LEDs) based on (0001)-oriented Al{sub x}Ga{sub 1−x}N multiple quantum wells (MQWs) has been studied by simulations and electroluminescence measurements. With increasing aluminum mole fraction in the quantum well x, the in-plane intensity of transverse-electric (TE) polarized light decreases relative to that of the transverse-magnetic polarized light, attributed to a reordering of the valence bands in Al{sub x}Ga{sub 1−x}N. Using k ⋅ p theoretical model calculations, the AlGaN MQW active region design has been optimized, yielding increased TE polarization and thus higher extraction efficiency for bottom-emitting LEDs in the deep UV spectral range. Using (i) narrow quantum wells, (ii) barriers with high aluminum mole fractions, and (iii) compressive growth on patterned aluminum nitride sapphire templates, strongly TE-polarized emission was observed at wavelengths as short as 239 nm.

  8. Influences of thicknesses and structures of barrier cap layers on As ion profiles and implant damages in HgCdTe epilayers

    NASA Astrophysics Data System (ADS)

    Shi, Changzhi; Lin, Chun; Wei, Yanfeng; Chen, Lu; Ye, Zhenhua

    2016-05-01

    The barrier cap layer (BCL) is considered to be able to absorb partially implant induced damages during ion implantation, thus its structure and property could impact the result of ion implantation. In this paper, for As ion implantation in HgCdTe, the different BCLs were deposited on the CdZnTe-based (LPE) and GaAs-based (MBE) HgCdTe epilayers, respectively. Then, the influences of thicknesses and structures of these BCLs on dopant profiles and implant damages were investigated. The as-grown BCLs include thermally evaporated (TE) ZnS, TE CdTe, electron beam evaporated (EBE) CdTe and in-situ CdTe/ZnTe grown by MBE. The SIMS profiles and TEM characterization indicate: For TE ZnS BCLs, there exists an optimized thickness to obtain the deepest As indiffusion after high temperature annealing, and the end-of-range (EOR) depth is linearly proportional to the thickness ratio of a-MCT layer/damage layer. For TE CdTe BCLs, the barrier layer induced channeling effect (BLICE) occurs to the thin BCL samples, while this effect is suppressed in the thick BCL samples. The phenomenon might be due to that the blocking effect of the layered structure inside each crystal column becomes dominate in the thick BCL samples. Additionally, the EBE CdTe BCL with layered structure can suppress effectively the BLICE effect; in the in-situ CdTe/ZnTe BCL, the short defect layer generated in the CdTe buffer layer and the amorphization of the ZnTe layer during ion implantation also play a significant role in suppressing the BLICE effect.

  9. The consequences of air flow on the distribution of aqueous species during dielectric barrier discharge treatment of thin water layers

    NASA Astrophysics Data System (ADS)

    Tian, Wei; Lietz, Amanda M.; Kushner, Mark J.

    2016-10-01

    The desired outcomes of wet tissue treatment by dielectric barrier discharges (DBDs) strongly depend on the integrated fluences of reactive species incident onto the tissue, which are determined by power, frequency and treatment time. The reactivity produced by such plasmas is often expected to be proportional to treatment time due to the accumulation of radicals in the liquid over the tissue. However, one of the typically uncontrolled parameters in DBD treatment of liquids and tissue is gas flow, which could affect the delivery of plasma produced radicals to the tissue. Gas flow can redistribute long-lived, plasma produced gas phase species prior to solvating in the liquid, while not greatly affecting the solvation of short-lived species. Gas flow can therefore potentially be a control mechanism for tailoring the fluences of reactive species to the tissue. In this paper, we report on a computational investigation of the consequences of gas flow on treatment of liquid layers covering tissue by atmospheric DBDs by up to 100 pulses. We found that gas flow (through residence time of the gas) can control the production of gas phase species requiring many collisions to form, such as reactive nitrogen species (RNS). The resulting solvation of the RNS in turn controls the production of aqueous species such as \\text{NO}\\text{3aq}- and \\text{ONOO}\\text{aq}- (aq denotes an aqueous species). With the exception of O3 and O3aq, reactive oxygen species (ROS) are less sensitive to gas flow, and so OHaq and H2O2aq, are determined primarily by discharge properties.

  10. Seasonal-to-interannual variability of the barrier layer in the western Pacific warm pool associated with ENSO

    NASA Astrophysics Data System (ADS)

    Wang, Xidong; Liu, Hailong

    2016-07-01

    This study investigates the seasonal-to-interannual variability of the barrier layer (BL) associated with El Niño/Southern Oscillation (ENSO) using in situ temperature-salinity observations and simple ocean assimilation data (SODA). The comparisons with the BL derived from the in situ observations show that SODA successfully captures the variability of the BL in the Pacific warm pool. On seasonal timescale, based on the empirical orthogonal function (EOF) analysis, we identify that three seasonal leading modes of the BL along the equatorial Pacific are closely associated with the transition, resurgence and onset of ENSO, respectively. We also confirm that two interannual leading modes of the BL are related to different flavors of ENSO events. EOF1 mainly embodies a combined response to the central and east Pacific ENSO events while EOF2 is related to the central Pacific ENSO events. We especially focus on the contrast of the BL between east Pacific El Niño (EPEN) and central Pacific El Niño (CPEN). During EPEN, the abnormally thick BL appears in the east of the dateline. It follows the sea surface salinity front to shift zonally with the evolution of EPEN event, and propagates toward the central Pacific. It can be attributed to horizontal ocean advection, heavy precipitation and the downwelling Kelvin waves. In contrast, during CPEN, the abnormally thick BL is confined to the region between 160°E and 180°E around the SSS front without significant west-east displacement. It is mainly dominated by the local processes including Ekman pumping, precipitation, and zonal ocean advection. Different from the BL in the EPEN events, it has no evident basin-scale propagating signal.

  11. Material and design engineering of (Al)GaN for high-performance avalanche photodiodes and intersubband applications

    NASA Astrophysics Data System (ADS)

    Razeghi, M.; Bayram, C.

    2009-05-01

    Numerous applications in scientific, medical, and military areas demand robust, compact, sensitive, and fast ultraviolet (UV) detection. Our (Al)GaN photodiodes pose high avalanche gain and single-photon detection efficiency that can measure up to these requirements. Inherit advantage of back-illumination in our devices offers an easier integration and layout packaging via flip-chip hybridization for UV focal plane arrays that may find uses from space applications to hostile-agent detection. Thanks to the recent (Al)GaN material optimization, III-Nitrides, known to have fast carrier dynamics and short relaxation times, are employed in (Al)GaN based superlattices that absorb in near-infrared regime. In this work, we explain the origins of our high performance UV APDs, and employ our (Al)GaN material knowledge for intersubband applications. We also discuss the extension of this material engineering into the far infrared, and even the terahertz (THz) region.

  12. Molecular beam epitaxial growth and characterization of Al(Ga)N nanowire deep ultraviolet light emitting diodes and lasers

    NASA Astrophysics Data System (ADS)

    Mi, Z.; Zhao, S.; Woo, S. Y.; Bugnet, M.; Djavid, M.; Liu, X.; Kang, J.; Kong, X.; Ji, W.; Guo, H.; Liu, Z.; Botton, G. A.

    2016-09-01

    We report on the detailed molecular beam epitaxial growth and characterization of Al(Ga)N nanowire heterostructures on Si and their applications for deep ultraviolet light emitting diodes and lasers. The nanowires are formed under nitrogen-rich conditions without using any metal catalyst. Compared to conventional epilayers, Mg-dopant incorporation is significantly enhanced in nearly strain- and defect-free Al(Ga)N nanowire structures, leading to efficient p-type conduction. The resulting Al(Ga)N nanowire LEDs exhibit excellent performance, including a turn-on voltage of ∼5.5 V for an AlN nanowire LED operating at 207 nm. The design, fabrication, and performance of an electrically injected AlGaN nanowire laser operating in the UV-B band is also presented.

  13. Gas-Barrier Hybrid Coatings by the Assembly of Novel Poly(vinyl alcohol) and Reduced Graphene Oxide Layers through Cross-Linking with Zirconium Adducts.

    PubMed

    Yan, Ning; Capezzuto, Filomena; Buonocore, Giovanna G; Lavorgna, Marino; Xia, Hesheng; Ambrosio, Luigi

    2015-10-14

    Gas-barrier materials obtained by coating poly(ethylene terephthalate) (PET) substrates have already been studied in the recent literature. However, because of the benefits of using cheaper, biodegradable, and nonpolar polymers, multilayered hybrid coatings consisting of alternate layers of reduced graphene oxide (rGO) nanosheets and a novel high amorphous vinyl alcohol (HAVOH) with zirconium (Zr) adducts as binders were successfully fabricated through a layer-by-layer (LbL) assembly approach. Atomic force microscopy analysis showed that rGO nanoplatelets were uniformly dispersed over the HAVOH polymer substrate. Scanning and transmission electron microscopies revealed that multilayer (HAVOH/Zr/rGO)n hybrid coatings exhibited a brick-wall structure with HAVOH and rGO as buildings blocks. It has been shown that 40 layers of HAVOH/Zr/rGO ultrathin films deposited on PET substrates lead to a decrease of 1 order of magnitude of oxygen permeability with respect to the pristine PET substrate. This is attributed to the effect of zirconium polymeric adducts, which enhance the assembling efficiency of rGO and compact the layers, as confirmed by NMR characterization, resulting in a significant increment of the oxygen-transport pathways. Because of their high barrier properties and high flexibility, these films are promising candidates in a variety of applications such as packaging, selective gas films, and protection of flexible electronics.

  14. Efficient spin injection through a crystalline AlOx tunnel barrier prepared by the oxidation of an ultra-thin Al epitaxial layer on GaAs

    NASA Astrophysics Data System (ADS)

    Nishizawa, N.; Munekata, H.

    2013-07-01

    We report that an ultra-thin, post-oxidized aluminum epilayer grown on the AlGaAs surface works as a high-quality tunnel barrier for spin injection from a ferromagnetic metal to a semiconductor. One of the key points of the present oxidation method is the formation of the crystalline AlOx template layer without oxidizing the AlGaAs region near the Al/AlGaAs interface. The oxidized Al layer is not amorphous but show well-defined single crystalline feature reminiscent of the spinel γ-AlOx phase. A spin-light emitting diode consisting of a Fe layer, a crystalline AlOx barrier layer, and an AlGaAs-InGaAs double hetero-structure has exhibited circularly polarized electroluminescence with circular polarization of PEL ˜ 0.145 at the remnant magnetization state of the Fe layer, indicating the relatively high spin injection efficiency (≡2PEL/PFe) of 0.63.

  15. Penetration resistant barrier

    DOEpatents

    Hoover, William R.; Mead, Keith E.; Street, Henry K.

    1977-01-01

    The disclosure relates to a barrier for resisting penetration by such as hand tools and oxy-acetylene cutting torches. The barrier comprises a layer of firebrick, which is preferably epoxy impregnated sandwiched between inner and outer layers of steel. Between the firebrick and steel are layers of resilient rubber-like filler.

  16. Puncture detecting barrier materials

    DOEpatents

    Hermes, R.E.; Ramsey, D.R.; Stampfer, J.F.; Macdonald, J.M.

    1998-03-31

    A method and apparatus for continuous real-time monitoring of the integrity of protective barrier materials, particularly protective barriers against toxic, radioactive and biologically hazardous materials has been developed. Conductivity, resistivity or capacitance between conductive layers in the multilayer protective materials is measured by using leads connected to electrically conductive layers in the protective barrier material. The measured conductivity, resistivity or capacitance significantly changes upon a physical breach of the protective barrier material. 4 figs.

  17. Puncture detecting barrier materials

    DOEpatents

    Hermes, Robert E.; Ramsey, David R.; Stampfer, Joseph F.; Macdonald, John M.

    1998-01-01

    A method and apparatus for continuous real-time monitoring of the integrity of protective barrier materials, particularly protective barriers against toxic, radioactive and biologically hazardous materials has been developed. Conductivity, resistivity or capacitance between conductive layers in the multilayer protective materials is measured by using leads connected to electrically conductive layers in the protective barrier material. The measured conductivity, resistivity or capacitance significantly changes upon a physical breach of the protective barrier material.

  18. Combined effect of capillary barrier and layered slope on water, solute and nanoparticle transfer in an unsaturated soil at lysimeter scale.

    PubMed

    Prédélus, Dieuseul; Coutinho, Artur Paiva; Lassabatere, Laurent; Bien, Le Binh; Winiarski, Thierry; Angulo-Jaramillo, Rafael

    2015-10-01

    It is well recognized that colloidal nanoparticles are highly mobile in soils and can facilitate the transport of contaminants through the vadose zone. This work presents the combined effect of the capillary barrier and soil layer slope on the transport of water, bromide and nanoparticles through an unsaturated soil. Experiments were performed in a lysimeter (1×1×1.6m(3)) called LUGH (Lysimeter for Urban Groundwater Hydrology). The LUGH has 15 outputs that identify the temporal and spatial evolution of water flow, solute flux and nanoparticles in relation to the soil surface conditions and the 3D system configuration. Two different soil structures were set up in the lysimeter. The first structure comprises a layer of sand (0-0.2cm, in diameter) 35cm thick placed horizontally above a layer of bimodal mixture also 35cm thick to create a capillary barrier at the interface between the sand and bimodal material. The bimodal material is composed of a mixture 50% by weight of sand and gravel (0.4-1.1cm, in diameter). The second structure, using the same amount of sand and bimodal mixture as the first structure represents an interface with a 25% slope. A 3D numerical model based on Richards equation for flow and the convection dispersion equations coupled with a mechanical module for nanoparticle trapping was developed. The results showed that under the effect of the capillary barrier, water accumulated at the interface of the two materials. The sloped structure deflects flow in contrast to the structure with zero slope. Approximately 80% of nanoparticles are retained in the lysimeter, with a greater retention at the interface of two materials. Finally, the model makes a good reproduction of physical mechanisms observed and appears to be a useful tool for identifying key processes leading to a better understanding of the effect of capillary barrier on nanoparticle transfer in an unsaturated heterogeneous soil.

  19. Radiolysis products and sensory properties of electron-beam-irradiated high-barrier food-packaging films containing a buried layer of recycled low-density polyethylene.

    PubMed

    Chytiri, S D; Badeka, A V; Riganakos, K A; Kontominas, M G

    2010-04-01

    The aim was to study the effect of electron-beam irradiation on the production of radiolysis products and sensory changes in experimental high-barrier packaging films composed of polyamide (PA), ethylene-vinyl alcohol (EVOH) and low-density polyethylene (LDPE). Films contained a middle buried layer of recycled LDPE, while films containing 100% virgin LDPE as the middle buried layer were taken as controls. Irradiation doses ranged between zero and 60 kGy. Generally, a large number of radiolysis products were produced during electron-beam irradiation, even at the lower absorbed doses of 5 and 10 kGy (approved doses for food 'cold pasteurization'). The quantity of radiolysis products increased with irradiation dose. There were no significant differences in radiolysis products identified between samples containing a recycled layer of LDPE and those containing virgin LDPE (all absorbed doses), indicating the 'functional barrier' properties of external virgin polymer layers. Sensory properties (mainly taste) of potable water were affected after contact with irradiated as low as 5 kGy packaging films. This effect increased with increasing irradiation dose.

  20. A tantalum diffusion barrier layer for improving the output performance of AlGaInP-based light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Kim, Dae-Hyun; Park, Jae-Seong; Kang, Daesung; Seong, Tae-Yeon

    2016-03-01

    We have investigated the effect of a Ta diffusion barrier layer on the electrical characteristics of AuBe/Au contacts on a p-GaP window layer for AlGaInP-based light-emitting diodes (LEDs). It was shown that after annealing at 500 °C, the AuBe/Ta/Au contacts exhibited nearly 2 orders of magnitude lower specific contact resistance (2.8 × 10-6 Ω·cm2) than the AuBe/Au contacts (1.0 × 10-4 Ω·cm2). The LEDs with and without the Ta diffusion barrier layer showed an external quantum efficiency of 14.03 and 13.5% at 50 mA, respectively. After annealing at 500 °C, the AuBe/Ta/Au contacts showed a higher reflectance (92.8% at 617 nm) than that of the AuBe/Au contacts (87.7%). X-ray photoemission spectroscopy (XPS) results showed that the Ga 2p core level for the annealed AuBe/Au samples shifted to higher binding energies, while this level shifted towards lower binding energies for the AuBe/Ta/Au samples. Depth profiles using Auger electron spectroscopy (AES) showed that annealing of the AuBe/Au samples caused the outdiffusion of both Be and P atoms into the metal contact, while for the AuBe/Ta/Au samples, the outdiffusion of Be atoms was blocked by the Ta barrier layer and more Be atoms were indiffused into GaP. The annealing-induced electrical degradation and ohmic contact formation are described and discussed based on the XPS and electrical results.

  1. Multi-scale analysis of the diffusion barrier layer of gadolinia-doped ceria in a solid oxide fuel cell operated in a stack for 3000 h

    NASA Astrophysics Data System (ADS)

    Morales, M.; Miguel-Pérez, V.; Tarancón, A.; Slodczyk, A.; Torrell, M.; Ballesteros, B.; Ouweltjes, J. P.; Bassat, J. M.; Montinaro, D.; Morata, A.

    2017-03-01

    The state-of-the-art materials for SOFCs are yttria-stabilized zirconia as electrolyte and lanthanum strontium cobalt ferrite as cathode. However, the formation of insulating phases between them requires the use of diffusion barriers, typically made of gadolinia doped ceria. The study of the stability of this layer during the fabrication and in operando is currently one of the major goals of the SOFC industry. In this work, the cation inter-diffusion at the cathode/barrier layer/electrolyte region is analysed for an anode-supported cell industrially fabricated by conventional techniques, assembled in a short-stack and tested under real operation conditions for 3000 h. A comprehensive study of this cell, and an equivalent non-operated one, is performed in order to understand the inter-diffusion mechanisms with possible effects on the final performance. The analyses evidence that the cation diffusion is occurring during the fabrication process. Despite the significant diffusion of Ce,Gd, Zr, Y and Sr cations, the formation of typically reported CGO-YSZ solid solution is not observed while the presence of isolated grains of SrZrO3 is proved. All in all, this study presents new insights into the stability of the typically employed diffusion barriers for solid oxide cells that will guide future strategies to improve their performance and durability.

  2. Bias Selectable Dual Band AlGaN Ultra-violet Detectors

    NASA Technical Reports Server (NTRS)

    Yan, Feng; Miko, Laddawan; Franz, David; Guan, Bing; Stahle, Carl M.

    2007-01-01

    Bias selectable dual band AlGaN ultra-violet (UV) detectors, which can separate UV-A and UV-B using one detector in the same pixel by bias switching, have been designed, fabricated and characterized. A two-terminal n-p-n photo-transistor-like structure was used. When a forward bias is applied between the top electrode and the bottom electrode, the detectors can successfully detect W-A and reject UV-B. Under reverse bias, they can detect UV-B and reject UV-A. The proof of concept design shows that it is feasible to fabricate high performance dual-band UV detectors based on the current AlGaN material growth and fabrication technologies.

  3. Status of AlGaN based focal plane arrays for UV solar blind detection

    NASA Astrophysics Data System (ADS)

    Reverchon, Jean-Luc; Mazzeo, Giovanni; Dussaigne, Amélie; Duboz, Jean-Yves

    2005-10-01

    The fast development of nitrides has given the opportunity to investigate AlGaN as a material for ultraviolet solar blind detection in competition with technologies based on photocathodes, MCP intensifiers, back thinned CCD or hybrid CMOS focal plane arrays. All of the them must be associated to UV blocking filters. These new detectors present both an intrinsic spectral selectivity and an extremely low dark current at room temperature. First we will present the ultimate properties of the AlGaN based devices. These spectral properties are analysed in regards to the sharp cut off required for solar blind detection around 280nm, and we will quantify how the stringent difficulties to achieve solar blind filters can be reduced. We also investigated the electrical capabilities of Schottky diodes or Metal-Semiconductor-Metal (MSM) technologies to detect extremely low UV signal. We will especially present results from a linear array based on a CCD readout multiplexor.

  4. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect

    Kuppulingam, B. Singh, Shubra Baskar, K.

    2014-04-24

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  5. Theoretical study of electrolyte gate AlGaN /GaN field effect transistors

    NASA Astrophysics Data System (ADS)

    Bayer, M.; Uhl, C.; Vogl, P.

    2005-02-01

    We predict the sensitivity of solution gate AlGaN /GaN field effect transistors to pH values of the electrolyte and to charged adsorbates at the semiconductor-electrolyte interface. Invoking the site-binding model for the chemical reactions at the oxidic semiconductor-electrolyte interface and taking into account the large polarization fields within the nitride heterostructure, the spatial charge and potential distribution have been calculated self-consistently both in the semiconductor and the electrolyte. In addition, the source-drain current is calculated and its sensitivity to the electrolyte's pH value is studied systematically. Comparison with experiment shows good agreement. A significantly enhanced resolution is predicted for AlGaN /GaN structures of N-face polarity.

  6. Vacuum barrier for excimer lasers

    DOEpatents

    Shurter, Roger P.

    1992-01-01

    A barrier for separating the vacuum area of a diode from the pressurized gas area of an excimer laser. The barrier is a composite material comprising layers of a metal such as copper, along with layers of polyimide, and a matrix of graphite fiber yarns impregnated with epoxy. The barrier is stronger than conventional foil barriers, and allows greater electron throughput.

  7. Vacuum barrier for excimer lasers

    DOEpatents

    Shurter, R.P.

    1992-09-15

    A barrier for separating the vacuum area of a diode from the pressurized gas area of an excimer laser. The barrier is a composite material comprising layers of a metal such as copper, along with layers of polyimide, and a matrix of graphite fiber yarns impregnated with epoxy. The barrier is stronger than conventional foil barriers, and allows greater electron throughput. 3 figs.

  8. High-efficiency blue LEDs with thin AlGaN interlayers in InGaN/GaN MQWs grown on Si (111) substrates

    NASA Astrophysics Data System (ADS)

    Kimura, Shigeya; Yoshida, Hisashi; Ito, Toshihide; Okada, Aoi; Uesugi, Kenjiro; Nunoue, Shinya

    2016-02-01

    We demonstrate high-efficiency blue light-emitting diodes (LEDs) with thin AlGaN interlayers in InGaN/GaN multiquantum wells (MQWs) grown on Si (111) substrates. The peak external quantum efficiency (EQE) ηEQE of 82% at room temperature and the hot/cold factor (HCF) of 94% have been obtained by using the functional thin AlGaN interlayers in the MQWs in addition to reducing threading dislocation densities (TDDs) in the blue LEDs. An HCF is defined as ηEQE(85°C)/ηEQE(25°C). The blue LED structures were grown by metal-organic chemical vapor deposition on Si (111) substrates. The MQWs applied as an active layer have 8- pairs of InGaN/AlyGa1-yN/GaN (0<=y<=1) heterostructures. Thinfilm LEDs were fabricated by removing the Si (111) substrates from the grown layers. It is observed by high-resolution transmission electron microscopy and three-dimensional atom probe analysis that the 1 nm-thick AlyGa1-yN interlayers, whose Al content is y=0.3 or less, are continuously formed. EQE and the HCFs of the LEDs with thin Al0.15Ga0.85N interlayers are enhanced compared with those of the samples without the interlayers in the low-current-density region. We consider that the enhancement is due to both the reduction of the nonradiative recombination centers and the increase of the radiative recombination rate mediated by the strain-induced hole carriers indicated by the simulation of the energy band diagram.

  9. Multilayer thermal barrier coating systems

    DOEpatents

    Vance, Steven J.; Goedjen, John G.; Sabol, Stephen M.; Sloan, Kelly M.

    2000-01-01

    The present invention generally describes multilayer thermal barrier coating systems and methods of making the multilayer thermal barrier coating systems. The thermal barrier coating systems comprise a first ceramic layer, a second ceramic layer, a thermally grown oxide layer, a metallic bond coating layer and a substrate. The thermal barrier coating systems have improved high temperature thermal and chemical stability for use in gas turbine applications.

  10. The role of surface kinetics on composition and quality of AlGaN

    NASA Astrophysics Data System (ADS)

    Bryan, Isaac; Bryan, Zachary; Mita, Seiji; Rice, Anthony; Hussey, Lindsay; Shelton, Christopher; Tweedie, James; Maria, Jon-Paul; Collazo, Ramón; Sitar, Zlatko

    2016-10-01

    Metal-polar, Al-rich AlGaN films were grown on both single crystalline AlN and sapphire substrates. The role of surface morphology and surface kinetics on AlGaN composition is presented. With the reduced dislocation density of the films grown on AlN substrates, atomically smooth bilayer stepped surfaces are achieved with RMS roughness of less than 50 pm for a 5×5 μm2 AFM scan area. By controlling the surface supersaturation through adjusting the growth rate, a transition from 2D nucleation to step flow was observed. The critical misorientation angle for step-bunching in nominal Al0.70Ga0.30N grown with a growth rate of 600 nm/h on AlN substrates was found to be 0.4°. The composition of bilayer stepped AlGaN was strongly dependent on substrate misorientation angle, where a compositional variation by a factor of two for a change in misorientation angle from 0.05 to 0.40° was observed; this is explained by the different surface diffusion lengths of Ga and Al. Step-bunching resulted in strong compositional inhomogeneity as observed by photoluminescence and scanning transmission electron microscopy studies.

  11. High-voltage 4H-SiC trench MOS barrier Schottky rectifier with low forward voltage drop using enhanced sidewall layer

    NASA Astrophysics Data System (ADS)

    Cho, Doohyung; Sim, Seulgi; Park, Kunsik; Won, Jongil; Kim, Sanggi; Kim, Kwangsoo

    2015-12-01

    In this paper, a 4H-SiC trench MOS barrier Schottky (TMBS) rectifier with an enhanced sidewall layer (ESL) is proposed. The proposed structure has a high doping concentration at the trench sidewall. This high doping concentration improves both the reverse blocking and forward characteristics of the structure. The ESL-TMBS rectifier has a 7.4% lower forward voltage drop and a 24% higher breakdown voltage. However, this structure has a reverse leakage current that is approximately three times higher than that of a conventional TMBS rectifier owing to the reduction in energy barrier height. This problem is solved when ESL is used partially, since its use provides a reverse leakage current that is comparable to that of a conventional TMBS rectifier. Thus, the forward voltage drop and breakdown voltage improve without any loss in static and dynamic characteristics in the ESL-TMBS rectifier compared with the performance of a conventional TMBS rectifier.

  12. Microstructure/electrical Property Correlations for Yttrium BARIUM(2) COPPER(3) OXYGEN(7-X)/BARRIER Layer Films Deposited on Aluminum Oxide, Silicon, and Yttria - Zirconia Substrates

    NASA Astrophysics Data System (ADS)

    Mueller, Carl Henry

    YBa_2Cu_3O_ {7-x} and barrier layer films were deposited on single-crystal silicon (Si), Al_2O _3, yittria-stabilized zirconia (Y-ZrO _2), SrTiO_3, and LaAlO_3 substrates. A pulsed laser deposition process was used to deposit the films at a substrate temperature of 730-750^circC, and the films were cooled in an oxygen ambient. The films were characterized using resistance versus temperature, critical current density (J_{c}), x-ray diffraction (XRD), scanning electron microscopy (SEM), Auger electron spectroscopy (AES), and Raman spectroscopy. Growth of barrier layers on Si and Al_2O_3 substrates prior to the superconductor suppressed chemical interdiffusion between the superconductor and substrate. For (1102) Al_2O _3, the best barrier layer was a SrTiO _3 film deposited at 200 mTorr of oxygen. The YBa_2Cu_3O_{7 -x} film had a zero resistance temperature of 83^circK, and the J _{c} was 2.5 times 10^6 amps/cm ^2 at 4.5^circ K. The surface resistance was 10^ {-2} ohms at 36 gigahertz. On silicon substrates, YBa_2Cu _3O_{7-x} degradation is aggrevated by thermal stresses created by the difference in thermal expansion coefficients between YBa_2Cu_3O_{7-x} and Si (13.2 versus 3.8 times 10 ^{-6}/^ circC, respectively), which causes microcracking in the YBa_2Cu_3O_ {7-x} films. Cracking and interdiffusion were minimized by depositing a YAlO_3 barrier layer prior to YBa_2Cu _3O_{7-x}. The thermal stresses were relieved by viscoelastic relaxation in the YBa_2Cu_3O_{7-x} film, and the T_0 was 78 ^circK. The J_{c} values of YBa_2Cu_3O_ {7-x} films on Y-ZrO_2 substrates were increased by depositing Y-ZrO _2 or Y_2O_3 barrier layers. YBa_2Cu _3O_{7-x}/Y_2O_3 films on Y-ZrO_2 substrates had J_{c} values of 9 times 10^5 and 1 times 10^7 amps/cm^2 at 77 and 4.5 ^circK. The J_{ c} of YBa_2Cu _3O_{7-x} films deposited on a Y-ZrO_2 substrate without a barrier layer was 6.8 times 10 ^3 amps/cm^2 at 4.5 ^circK. The higher J _{c} values were attributed to pinning of the magnetic flux by

  13. Impact of InGaN back barrier layer on performance of AIInN/AlN/GaN MOS-HEMTs

    NASA Astrophysics Data System (ADS)

    Swain, Sanjit Kumar; Adak, Sarosij; Pati, Sudhansu Kumar; Sarkar, Chandan Kumar

    2016-09-01

    In the present work, we have discussed the effect of InGaN back barrier on device performances of 100 nm gate length AlInN/AlN/GaN metal oxide semiconductor high electron mobility transistor (MOS-HEMT) device and a wide comparison is made with respect to without considering the back barrier layer. The InGaN layer is introduced in the intension to raise the conduction band of GaN buffer with respect to GaN channel so that there is an improvement in the carrier confinement and at the same time witnessed excellent high frequency performance. The simulations are carried out using 2D Sentaurus TCAD simulator using Hydrodynamic mobility model by taking interface traps into consideration. Due to high value of two-dimensional electron gas (2DEG) density and mobility in AlInN/AlN/GaN MOS-HEMT device, higher drain current density is achieved. Simulation are carried out for different device parameters such as transfer characteristic (Id-Vg), transconductance factor (gm), drain induced barrier lowering (DIBL), Subthreshold slope (SS), conduction band energy, transconductance generation factor (gm/Id) and electric field. We have also examined the RF performance such as, total gate capacitance (Cgg), current gain cutoff frequency (fT) and power gain cutoff frequency (fmax) of the proposed devices. Use of InGaN back barrier tends to increase threshold voltage towards more positive value, reduced DIBL, and improves SS and significant growth in (gm/Id) by 5.5%. It also helps to achieve better frequency response like substantial increase in fT up to 91 GHz with current gain 60 dB as compare to 67 GHz with 56 dB for the device without considering back barrier and increase in fmax up to 112 GHz with respect 94 GHz. These results evident that use of InGaN back barrier in such devices can be better solution for future analog and RF applications.

  14. Interactions of Cu with CoSi2, CrSi2 and TiSi2 with and without TiNx barrier layers

    NASA Astrophysics Data System (ADS)

    Olowolafe, J. O.; Li, Jian; Mayer, J. W.

    1990-12-01

    Interactions of Cu with CoSi2, CrSi2, and TiSi2 with and without interposed TiNx layers have been studied using Rutherford backscattering spectrometry, Auger electron spectrometry, x-ray diffraction, and in situ sheet resistivity measurements. Cu diffuses through a preformed CoSi2 layer to form the structure CoSi2/Cu3Si/Si(100). No dissociation of CoSi2 has been observed. For the Cu/CrSi2/Si system, the outdiffusion of Si leads to the formation of Cu3Si/CrSi2/Si at temperatures above 300 °C. At about the same temperature, Cu diffuses into a TiSi2 layer and to the TiSi2/Si interface to react with both Ti and Si forming Cu3Ti, Cu3Si, and Cu4Si phases. A 50-nm TiNx layer prepared by reactive sputtering was observed to be an effective diffusion barrier between Cu and CoSi2 or CrSi2. A 30-nm layer of TiNx simultaneously grown with TiSi2 by rapid thermal annealing proved effective between Cu and TiSi2 up to 500 °C.

  15. Tailoring morphology in free-standing anodic aluminium oxide: control of barrier layer opening down to the sub-10 nm diameter.

    PubMed

    Gong, Jie; Butler, William H; Zangari, Giovanni

    2010-05-01

    Free-standing, highly ordered porous aluminium oxide templates were fabricated by three-step anodization in oxalic, sulfuric or phosphoric acid solutions, followed by dissolution of the aluminium substrate in HgCl(2). Opening of the pore bottoms on the barrier layer side of these templates was carried out by using chemical or ion beam etching. Chemical etching is capable of achieving full pore opening, but partial pore opening occurs inhomogeneously. On the contrary, ion beam etching enables homogeneous and reproducible partial pore opening, with the pore size controlled through the etching time. By this method, pore openings as small as 5 nm can reliably be obtained.

  16. Observations of Surface Energy Fluxes and Boundary-Layer Structure Over Heron Reef, Great Barrier Reef, Australia

    NASA Astrophysics Data System (ADS)

    MacKellar, Mellissa C.; McGowan, Hamish A.; Phinn, Stuart R.; Soderholm, Joshua S.

    2013-02-01

    Over warm, shallow coral reefs the surface radiation and energy fluxes differ from those of the open ocean and result in modification to the marine atmospheric boundary layer via the development of convective internal boundary layers. The complex interrelationships between the surface energy balance and boundary-layer characteristics influence local weather (wind, temperature, humidity) and hydrodynamics (water temperature and currents), as well as larger scale processes, including cloud field properties and precipitation. The nature of these inter-relationships has not been accurately described for coral reef environments. This study presents the first measurements of the surface energy balance, radiation budget and boundary layer thermodynamics made over a coral reef using an eddy-covariance system and radiosonde aerological profiling of the lower atmosphere. Results show that changes in surface properties and the associated energetics across the ocean-reef boundary resulted in modification to the marine atmospheric boundary layer during the Austral winter and summer. Internal convective boundary layers developed within the marine atmospheric boundary layer over the reef and were found to be deeper in the summer, yet more unstable during the winter when cold and drier flow from the mainland enhances heat and moisture fluxes to the atmosphere. A mixed layer was identified in the marine atmospheric boundary layer varying from 375 to 1,200 m above the surface, and was deeper during the summer, particularly under stable anticyclonic conditions. Significant cloud cover and at times rain resulted in the development of a stable stratified atmosphere over the reef. Our findings show that, for Heron Reef, a lagoonal platform reef, there was a horizontal discontinuity in surface energy fluxes across the ocean-reef boundary, which modified the marine atmospheric boundary layer.

  17. Adhesive flexible barrier film, method of forming same, and organic electronic device including same

    DOEpatents

    Blizzard, John Donald; Weidner, William Kenneth

    2013-02-05

    An adhesive flexible barrier film comprises a substrate and a barrier layer disposed on the substrate. The barrier layer is formed from a barrier composition comprising an organosilicon compound. The adhesive flexible barrier film also comprises an adhesive layer disposed on the barrier layer and formed from an adhesive composition. A method of forming the adhesive flexible barrier film comprises the steps of disposing the barrier composition on the substrate to form the barrier layer, disposing the adhesive composition on the barrier layer to form the adhesive layer, and curing the barrier layer and the adhesive layer. The adhesive flexible barrier film may be utilized in organic electronic devices.

  18. Efficient gas barrier properties of multi-layer films based on poly(lactic acid) and fish gelatin.

    PubMed

    Hosseini, Seyed Fakhreddin; Javidi, Zahra; Rezaei, Masoud

    2016-11-01

    Multi-layer film structures of poly(lactic acid) (PLA) and fish gelatin (FG), prepared using the solvent casting technique, were studied in an effort to produce bio-based films with low oxygen (OP) and water vapor permeability (WVP). The scanning electron microscopy (SEM) images of triple-layer film showed that the outer PLA layers are being closely attached to the inner FG layer to make continuous film. The OP of multi-layer film (5.02cm(3)/m(2)daybar) decreased more than 8-fold compared with that of the PLA film, and the WVP of multi-layer film (0.125gmm/kPah m(2)) also decreased 11-fold compared with that of the FG film. Lamination with PLA profoundly increased the water resistance of the bare gelatin film. Meanwhile, the tensile strength of the triple-layer film (25±2.13MPa) was greater than that of FG film (7.48±1.70MPa). At the same time, the resulting film maintains high optical clarity. Differential scanning calorimetry (DSC) analysis also revealed that the materials were compatible showing only one Tg which decreased with FG deposition. This material exhibits an environmental-friendliness potential and a high versatility in food packaging.

  19. SiOx layer as functional barrier in polyethylene terephthalate (PET) bottles against potential contaminants from post-consumer recycled PET.

    PubMed

    Welle, Frank; Franz, Roland

    2008-06-01

    The barrier effect of a silicon oxide (SiOx) coating on the inner surface of PET bottles, in terms of the ability to reduce the migration of post-consumer compounds from the PET bottle wall into food simulants (3% acetic acid and 10% ethanol), was investigated. The barrier effect was examined by artificially introducing model substances (surrogates) into the PET bottle wall to represent a worst-case scenario. Test bottles with three different spiking levels up to approximately 1000 mg kg(-1) per surrogate were blown and coated on the inner surface. The SiOx-coated bottles and the non-coated reference bottles were filled with food simulants. From the specific migration of the surrogates with different bottles wall concentrations, the maximum surrogate concentrations in the bottle wall corresponding to migration of 10 microg l(-1) were determined. It was shown that the SiOx coating layer is an efficient barrier to post-consumer compounds. The maximum bottle wall concentrations of the surrogates corresponding to migration of 10 microg l(-1) were in the range of 200 mg kg(-1) for toluene and approximately 900 mg kg(-1) for benzophenone. Consequently, the SiOx coating allows use of conventionally recycled post-consumer PET flakes (without a super-clean recycling process) for packaging aqueous and low alcoholic foodstuffs (under cold-fill conditions) and protects food from migration of unwanted contaminants from post-consumer PET.

  20. GaN Schottky diodes with single-crystal aluminum barriers grown by plasma-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Tseng, H. Y.; Yang, W. C.; Lee, P. Y.; Lin, C. W.; Cheng, Kai-Yuan; Hsieh, K. C.; Cheng, K. Y.; Hsu, C.-H.

    2016-08-01

    GaN-based Schottky barrier diodes (SBDs) with single-crystal Al barriers grown by plasma-assisted molecular beam epitaxy are fabricated. Examined using in-situ reflection high-energy electron diffractions, ex-situ high-resolution x-ray diffractions, and high-resolution transmission electron microscopy, it is determined that epitaxial Al grows with its [111] axis coincident with the [0001] axis of the GaN substrate without rotation. In fabricated SBDs, a 0.2 V barrier height enhancement and 2 orders of magnitude reduction in leakage current are observed in single crystal Al/GaN SBDs compared to conventional thermal deposited Al/GaN SBDs. The strain induced piezoelectric field is determined to be the major source of the observed device performance enhancements.

  1. Numerical Simulation and Analytical Modeling of InAs nB n Infrared Detectors with n-Type Barrier Layers

    NASA Astrophysics Data System (ADS)

    Reine, Marion; Pinkie, Benjamin; Schuster, Jonathan; Bellotti, Enrico

    2014-08-01

    This paper presents one-dimensional numerical simulations and analytical modeling of InAs nB n detectors having n-type barrier layers (BLs) with donor concentrations ranging from 1.8 × 1015 cm-3 to 2.5 × 1016 cm-3. We consider only "ideal" defect-free nB n detectors, in which dark current is due only to the fundamental mechanisms of Auger-1 and radiative recombination. We employ a simplified nB n geometry, with the absorber layer (AL) and contact layer (CL) having the same donor concentration and comparable thicknesses, to reveal more clearly the underlying device physics and operation of this novel infrared detector. We examine quantitatively the three space-charge regions in the nB n detector with an n-type BL, and determine a criterion for combinations of bias voltage and BL donor concentration that allow operation of the nB n with no depletion region in the narrow-gap AL or CL. We determine the quantitative characteristics of the valence band (VB) barrier that is present for an n-type BL but not for a p-type BL. Solving Poisson's equation in the uniformly doped BL yields analytical expressions for the VB barrier height versus bias voltage, and an approximate expression for the crossover voltage for the onset of a depletion region in the AL. Our simulations lead to a new model for the ideal nB n with an n-type BL that consists of two ideal back-to-back photodiodes connected by a voltage-dependent series resistance representing the BL. Increasing the BL donor concentration lowers exponentially the mobile hole concentration in the BL, thereby exponentially increasing the BL series resistance. Reductions in dark current and photocurrent due to the valence barrier in the n-type BL only become appreciable when the BL series resistance becomes comparable to or exceeds the diffusion current resistances of the AL and CL.

  2. Influence of PEDOT:PSS on the effectiveness of barrier layers prepared by atomic layer deposition in organic light emitting diodes

    SciTech Connect

    Wegler, Barbara; Schmidt, Oliver; Hensel, Bernhard

    2015-01-15

    Organic light emitting diodes (OLEDs) are well suited for energy saving lighting applications, especially when thinking about highly flexible and large area devices. In order to avoid the degradation of the organic components by water and oxygen, OLEDs need to be encapsulated, e.g., by a thin sheet of glass. As the device is then no longer flexible, alternative coatings are required. Atomic layer deposition (ALD) is a very promising approach in this respect. The authors studied OLEDs that were encapsulated by 100 nm Al{sub 2}O{sub 3} deposited by ALD. The authors show that this coating effectively protects the active surface area of the OLEDs from humidity. However, secondary degradation processes still occur at sharp edges of the OLED stack where the extremely thin encapsulation layer does not provide perfect coverage. Particularly, the swelling of poly(3,4-ethylenedioxythiophene) mixed with poly(styrenesulfonate), which is a popular choice for the planarization of the bottom electrode and at the same time acts as a hole injection layer, affects the effectiveness of the encapsulation layer.

  3. Methods for improved growth of group III nitride buffer layers

    DOEpatents

    Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

    2014-07-15

    Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

  4. Effect of double MgO tunneling barrier on thermal stability and TMR ratio for perpendicular MTJ spin-valve with tungsten layers

    NASA Astrophysics Data System (ADS)

    Lee, Seung-Eun; Takemura, Yasutaka; Park, Jea-Gun

    2016-10-01

    A tunneling magneto-resistance (TMR) ratio of ˜163% at an annealing temperature of 400 °C was achieved in a single MgO-based perpendicular-magnetic-tunneling-junction (p-MTJ) spin valve with a tungsten (W)/tantalum (Ta) seed and W capping layer instead of with a Ta seed and capping layer. This was done by improving the interface perpendicular magnetic anisotropy (i-PMA) characteristic of the Co2Fe6B2 free layer and face-centered-cubic (f.c.c.) crystallinity of the MgO tunneling barrier. In particular, a TMR ratio of ˜141% at an annealing temperature of 400 °C and a thermal stability at room temperature of ˜61 were achieved in a double MgO-based p-MTJ spin valve with W/Ta seed, W spacer, and W capping layers by doubling the i-PMA magnetic moment and increasing slightly magnetic anisotropy field (Hk).

  5. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    SciTech Connect

    Das, Palash Biswas, Dhrubes

    2014-04-24

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

  6. Comparative simulations of a two-layer landfill barrier using the HELP Version 2. 0 and UNSAT-H Version 2. 0 computer codes

    SciTech Connect

    Nichols, W.E.

    1991-01-01

    This report documents the results of a simulation of the performance of a two-layer infiltration barrier for a nonradioactive dangerous waste landfill (NRDWL) at the US Department of Energy's Hanford Site in semi-arid southeast Washington State. The performance of the barrier was simulated for a period of 10 years using the UNSAT-H version 2.0 groundwater flow computer code. Pacific Northwest Laboratory performed this simulation to compare results using UNSAT-H 2.0 with those of the US Environmental Protection Agency's Hydrologic Evaluation of Landfill Performance (HELP) version 2.0 code. A conceptualization of the actual landfill barrier design was modeled using both codes. This model was simulated using 10 years of daily meteorological data collected at the Hanford Meteorological Station from 1979 through 1988. The intent of the comparison was to demonstrate that HELP conservatively predicts deep percolation of meteoric water at the Hanford Site. This demonstration required that the two codes be used to simulate the same conceptual model using identical, or at least essentially equivalent, input data. Comparing the results of the 10-year simulations showed that for the meteorological data and soil properties modeled the HELP 2.0 code was more conservative than the UNSAT-H code. HELP predicted a net drainage or deep percolation of 0.3592 cm (0.1556 in.) from the barrier for the 10-year period simulated. None to the UNSAT-H simulations predicted any deep percolation. HELP also predicted a greater proportion of precipitation returned to the atmosphere through evapotranspiration than did the UNSAT-H simulations in spite of the larger precipitation values being provided to HELP through an apparent data entry error. 14 refs., 11 figs., 8 tabs.

  7. Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al{sub 2}O{sub 3} films deposited by remote plasma atomic layer deposition

    SciTech Connect

    Jung, Hyunsoo; Choi, Hagyoung; Lee, Sanghun; Jeon, Heeyoung; Jeon, Hyeongtag

    2013-11-07

    In the present study, we investigated the gas and moisture permeation barrier properties of Al{sub 2}O{sub 3} films deposited on polyethersulfone films (PES) by capacitively coupled plasma (CCP) type Remote Plasma Atomic Layer Deposition (RPALD) at Radio Frequency (RF) plasma powers ranging from 100 W to 400 W in 100 W increments using Trimethylaluminum [TMA, Al(CH{sub 3}){sub 3}] as the Al source and O{sub 2} plasma as the reactant. To study the gas and moisture permeation barrier properties of 100-nm-thick Al{sub 2}O{sub 3} at various plasma powers, the Water Vapor Transmission Rate (WVTR) was measured using an electrical Ca degradation test. WVTR decreased as plasma power increased with WVTR values for 400 W and 100 W of 2.6 × 10{sup −4} gm{sup −2}day{sup −1} and 1.2 × 10{sup −3} gm{sup −2}day{sup −1}, respectively. The trends for life time, Al-O and O-H bond, density, and stoichiometry were similar to that of WVTR with improvement associated with increasing plasma power. Further, among plasma power ranging from 100 W to 400 W, the highest power of 400 W resulted in the best moisture permeation barrier properties. This result was attributed to differences in volume and amount of ion and radical fluxes, to join the ALD process, generated by O{sub 2} plasma as the plasma power changed during ALD process, which was determined using a plasma diagnosis technique called the Floating Harmonic Method (FHM). Plasma diagnosis by FHM revealed an increase in ion flux with increasing plasma power. With respect to the ALD process, our results indicated that higher plasma power generated increased ion and radical flux compared with lower plasma power. Thus, a higher plasma power provides the best gas and moisture permeation barrier properties.

  8. Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates

    SciTech Connect

    Crawford, Mary H.; Allerman, Andrew A.; Armstrong, Andrew M.; Smith, Michael L.; Cross, Karen C.

    2015-10-30

    We fabricated optically pumped and electrically injected ultraviolet (UV) lasers on reduced-threading-dislocation-density (reduced-TDD) AlGaN templates. The overgrowth of sub-micron-wide mesas in the Al0.32Ga0.68N templates enabled a tenfold reduction in TDD, to (2–3) × 108 cm–2. Optical pumping of AlGaN hetero-structures grown on the reduced-TDD templates yielded a low lasing threshold of 34 kW/cm2 at 346 nm. Room-temperature pulsed operation of laser diodes at 353 nm was demonstrated, with a threshold of 22.5 kA/cm2. Furthermore, reduced-TDD templates have been developed across the entire range of AlGaN compositions, presenting a promising approach for extending laser diodes into the deep UV.

  9. Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates

    DOE PAGES

    Crawford, Mary H.; Allerman, Andrew A.; Armstrong, Andrew M.; ...

    2015-10-30

    We fabricated optically pumped and electrically injected ultraviolet (UV) lasers on reduced-threading-dislocation-density (reduced-TDD) AlGaN templates. The overgrowth of sub-micron-wide mesas in the Al0.32Ga0.68N templates enabled a tenfold reduction in TDD, to (2–3) × 108 cm–2. Optical pumping of AlGaN hetero-structures grown on the reduced-TDD templates yielded a low lasing threshold of 34 kW/cm2 at 346 nm. Room-temperature pulsed operation of laser diodes at 353 nm was demonstrated, with a threshold of 22.5 kA/cm2. Furthermore, reduced-TDD templates have been developed across the entire range of AlGaN compositions, presenting a promising approach for extending laser diodes into the deep UV.

  10. Room-temperature deep-ultraviolet lasing at 241.5 nm of AlGaN multiple-quantum-well laser

    NASA Astrophysics Data System (ADS)

    Takano, Takayoshi; Narita, Yoshinobu; Horiuchi, Akihiko; Kawanishi, Hideo

    2004-05-01

    Room-temperature deep-ultraviolet lasing of AlxGa1-xN multiple-quantum-well lasers with an Al composition x of 0.66 was achieved at 241.5 nm under pulsed optical pumping. The threshold pumping power was approximately 1200 kW/cm2 at room temperature. The shortest lasing wavelength was 231.8 nm at 20 K. The laser structure was grown on a high-quality AlN layer, which was grown on a 4H-SiC substrate by inserting an AlN/GaN multibuffer-layer structure between the substrate and the AlN layer. Temperature dependence of lasing wavelength was also estimated to be 0.01 and 0.03 nm/K in the temperature region from 20 to 150 K and from 160 K to room temperature, respectively. The laser cavity was made of a cleaved facet of AlGaN epitaxial layers and a SiC substrate. For this purpose, it was necessary to polish the wafer to a thickness of less than 100 μm. The optimal wafer thickness for cleaving in our experiments was 60-70 μm.

  11. High quantum efficiency ultraviolet/blue AlGaN /InGaN photocathodes grown by molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Leopold, D. J.; Buckley, J. H.; Rebillot, P.

    2005-08-01

    Enormous technological breakthroughs have been made in optoelectronic devices through the use of advanced heteroepitaxial-semiconductor crystal-growth techniques. This technology is being extended toward enhanced ultraviolet/blue single-photon detection through the design and fabrication of atomically tailored heteroepitaxial GaAlN /GaInN photocathode device structures. The AlGaN /InGaN system is ideal because the band gap can be tailored over an energy range from 0.8 to 6.2 eV and epitaxial thin-film layers can be grown directly on optically transparent sapphire substrates. Although a single p-type GaN layer activated with cesium can produce reasonably high quantum efficiency in the ultraviolet wave band, a more complex design is necessary to achieve high levels extending into the blue region. In the present work, band-gap engineering concepts have been utilized to design heterostructure photocathodes. The increased level of sophistication offered by this approach has been exploited in an attempt to precisely control photoelectron transport to the photocathode surface. Thin heterostructure layers designed for transmission-mode detection were fabricated by molecular-beam epitaxy. A quantum efficiency of 40% at 250 nm was achieved using a thin, compositionally graded GaN /InGaN layer, epitaxially grown on a sapphire substrate. Further improvements are anticipated through continued optimization, defect reduction, and more complex photocathode designs.

  12. Proactive control of the metal-ceramic interface behavior of thermal barrier coatings using an artificial alpha-Al2O 3 layer

    NASA Astrophysics Data System (ADS)

    Su, Yi-Feng

    The reliability and life of thermal barrier coatings (TBCs) used in the hottest sections of advanced aircraft engines and power generation systems are largely dictated by: (1) the ability of a metallic bond coating to form an adherent thermally grown oxide (TGO) at the metal-ceramic interface and (2) the rate at which the TGO grows upon oxidation. It is postulated that a thin alpha-Al2O3 layer, if it could be directly deposited on a Ni-based alloy, will guide the alloy surface to form a TGO that is more tenacious and slower growing than what is attainable with state-of-the-art bond coatings. A chemical vapor deposition (CVD) process was used to directly deposit an alpha-Al2O3 layer on the surface of a single crystal Ni-bases superalloy. The layer was 150 nm thick, and consisted of small columnar grains (˜100 to 200 nm) with alpha-Al2O 3 as the major phase with a minute amount of theta-Al2O 3. Within 0.5 h of oxidation at 1150°C, the resulting TGO formed on the alloy surface underwent significant lateral grain growth. Consequently, within this time scale, the columnar nature of the TGO became well established. After 50 h, a network of ridges was clearly observed on the TGO surface instead of equiaxed grains typically observed on uncoated alloy surface. Comparison of the TGO morphologies observed with and without the CVD-Al2O 3 layer suggested that the transient oxidation of the alloy surface was considerably reduced. The alloy coated with the CVD-Al2O 3 layer also produced a much more adherent and slow growing TGO in comparison to that formed on the uncoated alloy surface. The CVD-Al2O 3 layer also improved its spallation resistance. Without the CVD-Al 2O3 layer, more than 50% of the TGO spalled off the alloy surface after 500 h in oxidation with significant wrinkling of the TGO that remained on the alloy surface. In contrast, the TGO remained intact with the CVD-Al2O3 layer after the 500 h exposure. Furthermore, the CVD layer significantly reduced the degree of

  13. Tuning the electron injection barrier between Co and C{sub 60} using Alq{sub 3} buffer layer

    SciTech Connect

    Wang Yuzhan; Qi Dongchen; Chen Shi; Wee, Andrew T. S.; Mao Hongying; Gao Xingyu

    2010-11-15

    We demonstrate that the electron injection barrier ({Delta}{sub e}) between Co and C{sub 60} can be tuned by inserting a thin Alq{sub 3} interlayer. Using ultraviolet photoemission spectroscopy, {Delta}{sub e} of C{sub 60} on Alq{sub 3}-predecorated Co ({Delta}{sub e}=0.3 eV) was found to be reduced by 0.3 eV compared with that of C{sub 60} deposited directly on the bare Co metal surface ({Delta}{sub e}=0.6 eV). Due to Fermi level pining at the Alq{sub 3}/Co interface, this tuning effect is independent of the thickness of Alq{sub 3} interlayer from multilayer to monolayer. Based on the experimental results, band level alignment diagrams are proposed for C{sub 60}/Co and C{sub 60}/Alq{sub 3}/Co interfaces with two different Alq{sub 3} thicknesses. Our findings could have potential applications for the reduction in the carrier injection barrier in organic spin valves.

  14. Interdigital Schottky barrier capacitor apparatus

    NASA Astrophysics Data System (ADS)

    Bierig

    1985-05-01

    The present invention relates broadly to Schottky barrier capacitors, and in particular to an interdigital Schottky barrier capacitor apparatus. In the prior art, the Schottky barrier diode is rather well known. In general, a Schottky barrier device comprises a semiconductor substrate layer that is formed by a first layer of heavily doped materials and a second layer of lightly doped materials upon which a layer of barrier metal is deposited thereon. The maximum reverse bias voltage which can be appplied to the Schottky barrier device is determined by the thickness of the lightly doped layer of semiconductive material which is deposited upon the substrate layer. This is only one of the factors that determined the reverse bias voltage, When a guardring is diffused into the lightly doped layer of semiconductive substrate material, the thickness of the layer is reduced, and therefore, the reverse bias voltage that can be applied to the Schottky device is reduced.

  15. Schottky barrier contrasts in single and bi-layer graphene contacts for MoS{sub 2} field-effect transistors

    SciTech Connect

    Du, Hyewon; Kim, Taekwang; Shin, Somyeong; Kim, Dahye; Seo, Sunae; Kim, Hakseong; Lee, Sang Wook; Sung, Ji Ho; Jo, Moon-Ho; Lee, Myoung Jae; Seo, David H.

    2015-12-07

    We have investigated single- and bi-layer graphene as source-drain electrodes for n-type MoS{sub 2} transistors. Ti-MoS{sub 2}-graphene heterojunction transistors using both single-layer MoS{sub 2} (1M) and 4-layer MoS{sub 2} (4M) were fabricated in order to compare graphene electrodes with commonly used Ti electrodes. MoS{sub 2}-graphene Schottky barrier provided electron injection efficiency up to 130 times higher in the subthreshold regime when compared with MoS{sub 2}-Ti, which resulted in V{sub DS} polarity dependence of device parameters such as threshold voltage (V{sub TH}) and subthreshold swing (SS). Comparing single-layer graphene (SG) with bi-layer graphene (BG) in 4M devices, SG electrodes exhibited enhanced device performance with higher on/off ratio and increased field-effect mobility (μ{sub FE}) due to more sensitive Fermi level shift by gate voltage. Meanwhile, in the strongly accumulated regime, we observed opposing behavior depending on MoS{sub 2} thickness for both SG and BG contacts. Differential conductance (σ{sub d}) of 1M increases with V{sub DS} irrespective of V{sub DS} polarity, while σ{sub d} of 4M ceases monotonic growth at positive V{sub DS} values transitioning to ohmic-like contact formation. Nevertheless, the low absolute value of σ{sub d} saturation of the 4M-graphene junction demonstrates that graphene electrode could be unfavorable for high current carrying transistors.

  16. Extreme Radiation Hardness and Space Qualification of AlGaN Optoelectronic Devices

    SciTech Connect

    Sun, Ke-Xun; Balakrishnan, Kathik; Hultgren, Eric; Goebel, John; Bilenko, Yuri; Yang, Jinwei; Sun, Wenhong; Shatalov, Max; Hu, Xuhong; Gaska, Remis

    2010-09-21

    Unprecedented radiation hardness and environment robustness are required in the new generation of high energy density physics (HEDP) experiments and deep space exploration. National Ignition Facility (NIF) break-even shots will have a neutron yield of 1015 or higher. The Europa Jupiter System Mission (EJSM) mission instruments will be irradiated with a total fluence of 1012 protons/cm2 during the space journey. In addition, large temperature variations and mechanical shocks are expected in these applications under extreme conditions. Hefty radiation and thermal shields are required for Si and GaAs based electronics and optoelectronics devices. However, for direct illumination and imaging applications, shielding is not a viable option. It is an urgent task to search for new semiconductor technologies and to develop radiation hard and environmentally robust optoelectronic devices. We will report on our latest systematic experimental studies on radiation hardness and space qualifications of AlGaN optoelectronic devices: Deep UV Light Emitting Diodes (DUV LEDs) and solarblind UV Photodiodes (PDs). For custom designed AlGaN DUV LEDs with a central emission wavelength of 255 nm, we have demonstrated its extreme radiation hardness up to 2x1012 protons/cm2 with 63.9 MeV proton beams. We have demonstrated an operation lifetime of over 26,000 hours in a nitrogen rich environment, and 23,000 hours of operation in vacuum without significant power drop and spectral shift. The DUV LEDs with multiple packaging styles have passed stringent space qualifications with 14 g random vibrations, and 21 cycles of 100K temperature cycles. The driving voltage, current, emission spectra and optical power (V-I-P) operation characteristics exhibited no significant changes after the space environmental tests. The DUV LEDs will be used for photoelectric charge management in space flights. For custom designed AlGaN UV photodiodes with a central response wavelength of 255 nm, we have demonstrated

  17. Lasing and Longitudinal Cavity Modes in Photo-Pumped Deep Ultraviolet AlGaN Heterostructures

    DTIC Science & Technology

    2013-04-29

    found else- where.19 Laser cavities were obtained by cleaving along the m-facet of the AlN wafer . For the 1.5 mm long cavity, the cleaving was done with... lasers . The authors would like to thank Paul Rozvadovsky of HexaTech for wafer thinning, which made cleaving of short cavities possible. 1S. Nakamura...NC 27709-2211 15. SUBJECT TERMS AlGaN lasers , optical pumping, longitudinal cavity modes Jinqiao Xie, Seiji Mita, Zachary Bryan, Wei Guo, Lindsay

  18. Photogalvanic effects for interband absorption in AlGaN /GaN superlattices

    NASA Astrophysics Data System (ADS)

    Cho, K. S.; Chen, Y. F.; Tang, Y. Q.; Shen, B.

    2007-01-01

    The linear and circular photogalvanic effects (CPGEs), induced by ultraviolet (325nm) radiation, have been observed in the (0001)-oriented Al0.15Ga0.85N/GaN superlattices. The CPGE current changes sign upon reversing the radiation helicity, and it is up to two orders of magnitude larger than that obtained by far-infrared radiation. This result suggests the existence of a sizeable Rashba spin splitting in AlGaN /GaN superlattices. It also provides a possibility for the generation of spin orientation-induced current at room temperature.

  19. Improving photoelectrochemical performance on quantum dots co-sensitized TiO2 nanotube arrays using ZnO energy barrier by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Zeng, Min; Zeng, Xi; Peng, Xiange; Zhu, Zhuo; Liao, Jianjun; Liu, Kai; Wang, Guizhen; Lin, Shiwei

    2016-12-01

    PbS and CdS quantum dots (QDs) have been deposited onto TiO2 nanotube arrays (TNTAs) in turn via a sonication-assisted successive ionic layer adsorption and reaction method. This method could uniformly decorate TNTAs with QDs, avoiding QDs aggregation at the mouth of TiO2 nanotube. The loading amounts of QDs on TNTAs could be controlled by adjusting the TNTAs length. Under one sun illumination, the QDs co-sensitized TNTAs (TNTAs/QDs) with the length of about 2.4 μm displayed the highest photocurrent of 4.32 mA cm-2, which is 27 times higher than that of the bare TNTAs. Introduction of a thin ZnO energy barrier by atomic layer deposition (ALD) between the TNTAs and QDs can further improve the photocurrent of TNTAs/QDs. And the TNTAs/QDs with 10 ALD cycles of ZnO interlayer exhibits the highest photocurrent of 5.24 mA cm-2 and best photoconversion efficiency of 4.9%, a more than 20% enhancement over the bare TNTAs/QDs. Such enhanced photoelectrochemical performance may be ascribed to the increased amounts of QDs on the TNTAs due to the introduction of ZnO interlayer. The benefits of ALD layers play a crucial role in development and optimization of high-performance photoelectrodes in the near future.

  20. Improving the efficiency of cadmium sulfide-sensitized titanium dioxide/indium tin oxide glass photoelectrodes using silver sulfide as an energy barrier layer and a light absorber

    NASA Astrophysics Data System (ADS)

    Chen, Chong; Zhai, Yong; Li, Chunxi; Li, Fumin

    2014-11-01

    Cadmium sulfide (CdS) and silver sulfide (Ag2S) nanocrystals are deposited on the titanium dioxide (TiO2) nanocrystalline film on indium tin oxide (ITO) substrate to prepare CdS/Ag2S/TiO2/ITO photoelectrodes through a new method known as the molecular precursor decomposition method. The Ag2S is interposed between the TiO2 nanocrystal film and CdS nanocrystals as an energy barrier layer and a light absorber. As a consequence, the energy conversion efficiency of the CdS/Ag2S/TiO2/ITO electrodes is significantly improved. Under AM 1.5 G sunlight irradiation, the maximum efficiency achieved for the CdS(4)/Ag2S/TiO2/ITO electrode is 3.46%, corresponding to an increase of about 150% as compared to the CdS(4)/TiO2/ITO electrode without the Ag2S layer. Our experimental results show that the improved efficiency is mainly due to the formation of Ag2S layer that may increase the light absorbance and reduce the recombination of photogenerated electrons with redox ions from the electrolyte.

  1. Improving the efficiency of cadmium sulfide-sensitized titanium dioxide/indium tin oxide glass photoelectrodes using silver sulfide as an energy barrier layer and a light absorber

    PubMed Central

    2014-01-01

    Cadmium sulfide (CdS) and silver sulfide (Ag2S) nanocrystals are deposited on the titanium dioxide (TiO2) nanocrystalline film on indium tin oxide (ITO) substrate to prepare CdS/Ag2S/TiO2/ITO photoelectrodes through a new method known as the molecular precursor decomposition method. The Ag2S is interposed between the TiO2 nanocrystal film and CdS nanocrystals as an energy barrier layer and a light absorber. As a consequence, the energy conversion efficiency of the CdS/Ag2S/TiO2/ITO electrodes is significantly improved. Under AM 1.5 G sunlight irradiation, the maximum efficiency achieved for the CdS(4)/Ag2S/TiO2/ITO electrode is 3.46%, corresponding to an increase of about 150% as compared to the CdS(4)/TiO2/ITO electrode without the Ag2S layer. Our experimental results show that the improved efficiency is mainly due to the formation of Ag2S layer that may increase the light absorbance and reduce the recombination of photogenerated electrons with redox ions from the electrolyte. PMID:25411566

  2. Improving the efficiency of cadmium sulfide-sensitized titanium dioxide/indium tin oxide glass photoelectrodes using silver sulfide as an energy barrier layer and a light absorber.

    PubMed

    Chen, Chong; Zhai, Yong; Li, Chunxi; Li, Fumin

    2014-01-01

    Cadmium sulfide (CdS) and silver sulfide (Ag2S) nanocrystals are deposited on the titanium dioxide (TiO2) nanocrystalline film on indium tin oxide (ITO) substrate to prepare CdS/Ag2S/TiO2/ITO photoelectrodes through a new method known as the molecular precursor decomposition method. The Ag2S is interposed between the TiO2 nanocrystal film and CdS nanocrystals as an energy barrier layer and a light absorber. As a consequence, the energy conversion efficiency of the CdS/Ag2S/TiO2/ITO electrodes is significantly improved. Under AM 1.5 G sunlight irradiation, the maximum efficiency achieved for the CdS(4)/Ag2S/TiO2/ITO electrode is 3.46%, corresponding to an increase of about 150% as compared to the CdS(4)/TiO2/ITO electrode without the Ag2S layer. Our experimental results show that the improved efficiency is mainly due to the formation of Ag2S layer that may increase the light absorbance and reduce the recombination of photogenerated electrons with redox ions from the electrolyte.

  3. Investigation of the release of Si from SiO{sub 2} during the formation of manganese/ruthenium barrier layers

    SciTech Connect

    McCoy, A. P.; Casey, P.; Bogan, J.; Byrne, C.; Hughes, G.

    2013-05-20

    The thermodynamic and structural stability of ruthenium-manganese diffusion barriers on SiO{sub 2} is assessed. A {approx}2 nm film composed of partially oxidized manganese (MnO{sub x} where x < 1) was deposited on a 3 nm thick Ru film and the Mn-MnO{sub x}/Ru/SiO{sub 2} structure was subsequently thermally annealed. X-ray photoelectron spectroscopy and secondary ion mass spectroscopy studies suggest the release and upward diffusion of Si from the dielectric substrate as a result of manganese-silicate formation at the Ru/SiO{sub 2} interface. The migration of Si up through the Ru film results in further manganese-silicate formation upon its interaction with the Mn-MnO{sub x} deposited layer.

  4. Chemical and structural investigations of the incorporation of metal manganese into ruthenium thin films for use as copper diffusion barrier layers

    SciTech Connect

    McCoy, A. P.; Casey, P.; Bogan, J.; Hughes, G.; Lozano, J. G.; Nellist, P. D.

    2012-12-03

    The incorporation of manganese into a 3 nm ruthenium thin-film is presented as a potential mechanism to improve its performance as a copper diffusion barrier. Manganese ({approx}1 nm) was deposited on an atomic layer deposited Ru film, and the Mn/Ru/SiO{sub 2} structure was subsequently thermally annealed. X-ray photoelectron spectroscopy studies reveal the chemical interaction of Mn with the SiO{sub 2} substrate to form manganese-silicate (MnSiO{sub 3}), implying the migration of the metal through the Ru film. Electron energy loss spectroscopy line profile measurements of the intensity of the Mn signal across the Ru film confirm the presence of Mn at the Ru/SiO{sub 2} interface.

  5. Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode

    SciTech Connect

    Hu, J. Groeseneken, G.; Stoffels, S.; Lenci, S.; Venegas, R.; Decoutere, S.; Bakeroot, B.

    2015-02-23

    This paper presents a combined technique of high voltage off-state stress and current transient measurements to investigate the trapping/de-trapping characteristics of Au-free AlGaN/GaN Schottky barrier diodes. The device features a symmetric three-terminal structure with a central anode contact surrounded by two separate cathodes. Under the diode off-state stress conditions, the two separate cathodes were electrically shorted. The de-trapping dynamics was studied by monitoring the recovery of the two-dimensional electron gas (2DEG) current at different temperatures by applying 0.5 V at cathode 2 while grounding cathode 1. During the recovery, the anode contact acts as a sensor of changes in diode leakage current. This leakage variation was found to be mainly due to the barrier height variation. With this method, the energy level and capture cross section of different traps in the AlGaN/GaN Schottky barrier diode can be extracted. Furthermore, the physical location of different trapping phenomena is indicated by studying the variation of the diode leakage current during the recovery. We have identified two distinct trapping mechanisms: (i) electron trapping at the AlGaN surface in the vicinity of the Schottky contact which results in the leakage reduction (barrier height ϕ{sub B} increase) together with R{sub ON} degradation; (ii) the electron trapping in the GaN channel layer which partially depletes the 2DEG. The physical origin of the two different traps is discussed in the text.

  6. Large-scale fabrication of linear low density polyethylene/layered double hydroxides composite films with enhanced heat retention, thermal, mechanical, optical and water vapor barrier properties

    NASA Astrophysics Data System (ADS)

    Xie, Jiazhuo; Zhang, Kun; Zhao, Qinghua; Wang, Qingguo; Xu, Jing

    2016-11-01

    Novel LDH intercalated with organic aliphatic long-chain anion was large-scale synthesized innovatively by high-energy ball milling in one pot. The linear low density polyethylene (LLDPE)/layered double hydroxides (LDH) composite films with enhanced heat retention, thermal, mechanical, optical and water vapor barrier properties were fabricated by melt blending and blowing process. FT IR, XRD, SEM results show that LDH particles were dispersed uniformly in the LLDPE composite films. Particularly, LLDPE composite film with 1% LDH exhibited the optimal performance among all the composite films with a 60.36% enhancement in the water vapor barrier property and a 45.73 °C increase in the temperature of maximum mass loss rate compared with pure LLDPE film. Furthermore, the improved infrared absorbance (1180-914 cm-1) of LLDPE/LDH films revealed the significant enhancement of heat retention. Therefore, this study prompts the application of LLDPE/LDH films as agricultural films with superior heat retention.

  7. Contrasting conduction mechanisms of two internal barrier layer capacitors: (Mn, Nb)-doped SrTiO3 and CaCu3Ti4O12

    NASA Astrophysics Data System (ADS)

    Tsuji, Kosuke; Chen, Wei-Ting; Guo, Hanzheng; Lee, Wen-Hsi; Guillemet-Fritsch, Sophie; Randall, Clive A.

    2017-02-01

    The d.c. conduction is investigated in the two different types of internal barrier layer capacitors, namely, (Mn, Nb)-doped SrTiO3 (STO) and CaCu3Ti4O12 (CCTO). Scanning electron microscopy (SEM) and Capacitance - Voltage (C-V) analysis are performed to estimate the effective electric field at a grain boundary, EGB. Then, the d.c. conduction mechanism is discussed based on the J (Current density)-EGB characteristics. Three different conduction mechanisms are successively observed with the increase of EGB in both systems. In (Mn, Nb)-doped STO, non-linear J-EGB characteristics is temperature dependent at the intermediate EGB and becomes relatively insensitive to the temperature at the higher EGB. The J- EGB at each regime is explained by the Schottky emission (SE) followed by Fowler-Nordheim (F-N) tunneling. Based on the F-N tunneling, the breakdown voltage is then scaled by the function of the depletion layer thickness and Schottky barrier height at the average grain boundary. The proposed function shows a clear linear relationship with the breakdown. On the other hand, F-N tunneling was not observed in CCTO in our measurement. Ohmic, Poole-Frenkel (P-F), and SE are successively observed in CCTO. The transition point from P-F and SE depends on EGB and temperature. A charge-based deep level transient spectroscopy study reveals that 3 types of trap states exist in CCTO. The trap one with Et ˜ 0.65 eV below the conduction band is found to be responsible for the P-F conduction.

  8. Chemical and structural investigation of the role of both Mn and Mn oxide in the formation of manganese silicate barrier layers on SiO{sub 2}

    SciTech Connect

    Casey, P.; Bogan, J.; Hughes, G.; Lozano, J. G.; Nellist, P. D.

    2011-09-01

    In this study, Mn silicate (MnSiO{sub 3}) barrier layers were formed on thermally grown SiO{sub 2} using both metallic Mn and oxidized Mn films, in order to investigate the role of oxygen in determining the extent of the interaction between the deposited Mn and the SiO{sub 2} substrate. Using x-ray photoelectron spectroscopy, it has been shown that a metallic Mn film with an approximate thickness of 1 nm cannot be fully converted to Mn silicate following vacuum annealing to 500 deg. C. Transmission electron microscopy (TEM) analysis suggests the maximum MnSiO{sub 3} layer thickness obtainable using metallic Mn is {approx}1.7 nm. In contrast, a {approx}1 nm partially oxidized Mn film can be fully converted to Mn silicate following thermal annealing to 400 deg. C, forming a MnSiO{sub 3} layer with a measured thickness of 2.6 nm. TEM analysis also clearly shows that MnSiO{sub 3} growth results in a corresponding reduction in the SiO{sub 2} layer thickness. It has also been shown that a fully oxidized Mn oxide thin film can be converted to Mn silicate, in the absence of metallic Mn. Based on these results it is suggested that the presence of Mn oxide species at the Mn/SiO{sub 2} interface facilitates the conversion of SiO{sub 2} to MnSiO{sub 3}, in agreement with previously published studies.

  9. Long-term effects of multiply pulsed dielectric barrier discharges in air on thin water layers over tissue: stationary and random streamers

    NASA Astrophysics Data System (ADS)

    Tian, Wei; Kushner, Mark J.

    2015-12-01

    Tissue covered by thin liquid layers treated by atmospheric pressure plasmas for biomedical applications ultimately requires a reproducible protocol for human healthcare. The desired outcomes of wet tissue treatment by dielectric barrier discharges (DBDs) depend on the plasma dose which determines the integral fluence of radicals, ions, electric fields and UV/VUV photons incident onto the tissue. These fluences are controlled by power, frequency and treatment time. To first order, these parameters determine the energy deposition (J cm-2) onto the tissue. However, energy deposition may not be the only parameter that determines the fluences of reactants to the underlying tissue. In this paper, we report on a computational investigation of multipulse DBDs interacting with wet tissue. The DBDs were simulated for 100 pulses at different repetition rates and liquid thicknesses followed by 10 s or more of afterglow. Two schemes were investigated—stationary and random. In the stationary scheme, the DBD plasma streamer continues to strike at the same location on the liquid layer, whereas in the random scheme the plasma streamer strikes at random locations on the liquid layer. These differences in streamer locations strongly affect the spatial distribution of solvated species such as OHaq and H2O2aq (‘aq’ represents an aqueous species), which have high rates of solvation. The spatial distribution of species such as NOaq, which have low rates of solvation, are less affected by the location of the streamer due to the remediating effects of diffusion in the air. The end result is that fluences to the tissue are sensitive to the spatial location of the streamer due to the ensuing reactions in the liquid between species that have low and high rates of solvation. These reactions can be controlled not only through location of the streamer, but also by repetition rate and thickness of the liquid layer.

  10. High-temperature carrier density and mobility enhancements in AlGaN/GaN HEMT using AlN spacer layer

    NASA Astrophysics Data System (ADS)

    Ko, Tsung-Shine; Lin, Der-Yuh; Lin, Chia-Feng; Chang, Che-Wei; Zhang, Jin-Cheng; Tu, Shang-Ju

    2017-04-01

    In this paper, we experimentally studied the effect of AlN spacer layer on optical and electrical properties of AlGaN/GaN high electric mobility transistors (HEMTs) grown by metal organic chemical vapor deposition method. For AlGaN layer in HEMT structure, the Al composition of the sample was determined using x-ray diffraction and photoluminescence. Electrolyte electro-reflectance (EER) measurement not only confirmed the aluminum composition of AlGaN layer, but also determined the electric field strength on the AlGaN layer through the Franz-Keldysh oscillation phenomenon. This result indicated that the electric field on the AlGaN layer could be improved from 430 to 621 kV/cm when AlN spacer layer was inserted in HEMT structure, which increased the concentration of two dimensional electron gas (2DEG) and improve the mobility. The temperature dependent Hall results show that both the mobility and the carrier concentration of 2DEG would decrease abruptly causing HEMT loss of function due to phonon scattering and carrier thermal escape when temperature increases above a specific value. Meanwhile, our study also demonstrates using AlN spacer layer could be beneficial to allow the mobility and carrier density of 2DEG sustaining at high temperature region.

  11. Flexible thin-layer dielectric barrier discharge plasma treatment of pork butt and beef loin: effects on pathogen inactivation and meat-quality attributes.

    PubMed

    Jayasena, Dinesh D; Kim, Hyun Joo; Yong, Hae In; Park, Sanghoo; Kim, Kijung; Choe, Wonho; Jo, Cheorun

    2015-04-01

    The effects of a flexible thin-layer dielectric barrier discharge (DBD) plasma system using a sealed package on microbial inactivation and quality attributes of fresh pork and beef were tested. Following a 10-min treatment, the microbial-load reductions of Listeria monocytogenes, Escherichia coli O157:H7, and Salmonella Typhimurium were 2.04, 2.54, and 2.68 Log CFU/g in pork-butt samples and 1.90, 2.57, and 2.58 Log CFU/g in beef-loin samples, respectively. Colorimetric analysis showed that DBD-plasma treatment did not significantly affect L* values (lightness) of pork and beef samples, but lowered a* values (redness) significantly after 5- and 7.5-min exposures. The plasma treatment significantly influenced lipid oxidation only after a 10-min exposure. The texture of both types of meat was unaffected by plasma treatment. All sensory parameters of treated and non-treated samples were comparable except for taste, which was negatively influenced by the plasma treatment (P < 0.05). This thin-layer DBD-plasma system can be applied to inactivate foodborne pathogens. The observed minor deterioration of meat quality might be prevented by the use of hurdle technology.

  12. 80% tunneling magnetoresistance at room temperature for thin Al-O barrier magnetic tunnel junction with CoFeB as free and reference layers

    NASA Astrophysics Data System (ADS)

    Wei, H. X.; Qin, Q. H.; Ma, M.; Sharif, R.; Han, X. F.

    2007-05-01

    Magnetic tunnel junctions (MTJs) with structures of Ta(5)/Cu(10)/Ta(5)/Ir21Mn79(10)/Co75Fe25(2)/Ru(0.75)/Co40Fe40B20(3)/Al(0.6)-O /Co40Fe40B20(2.5)/Ta(3)/Ru(7) (units in nanometers) were deposited via ultrahigh vacuum magnetron sputtering (ULVAC). Microscale ring-type magnetic tunnel junctions (RMTJs) with an outer radius of 2μm and an inner radius of 1μm were patterned using standard UV lithography combined with ion milling. Both reference and free layers were Co40Fe40B20 and a very thin Al-O (0.6nm) barrier layer was used. Tunneling magnetoresistances (TMRs) of up to 81% at room temperature and 107% at 4.2K were observed. These RMTJs with high TMR and low coercivity, of about 26Oe, combined with the ring-type geometry, which greatly reduces stray magnetic field, are ideal for certain magnetic field sensor applications.

  13. High-barrier Schottky contact on n-type 4H-SiC epitaxial layer and studies of defect levels by deep level transient spectroscopy (DLTS)

    NASA Astrophysics Data System (ADS)

    Nguyen, Khai V.; Pak, Rahmi O.; Oner, Cihan; Mannan, Mohammad A.; Mandal, Krishna C.

    2015-08-01

    High barrier Schottky contact has been fabricated on 50 μm n-type 4H-SiC epitaxial layers grown on 350 μm thick substrate 8° off-cut towards the [11̅20] direction. The 4H-SiC epitaxial wafer was diced into 10 x 10 mm2 samples. The metal-semiconductor junctions were fabricated by photolithography and dc sputtering with ruthenium (Ru). The junction properties were characterized through current-voltage (I-V) and capacitance-voltage (C-V) measurements. Detectors were characterized by alpha spectroscopy measurements in terms of energy resolution and charge collection efficiency using a 0.1 μCi 241Am radiation source. It was found that detectors fabricated from high work function rare transition metal Ru demonstrated very low leakage current and significant improvement of detector performance. Defect characterization of the epitaxial layers was conducted by deep level transient spectroscopy (DLTS) to thoroughly investigate the defect levels in the active region. The presence of a new defect level induced by this rare transition metal-semiconductor interface has been identified and characterized.

  14. High-performance enhancement-mode AlGaN/GaN MOS-HEMTs with fluorinated stack gate dielectrics and thin barrier layer

    NASA Astrophysics Data System (ADS)

    Tao, Gao; Ruimin, Xu; Kai, Zhang; Yuechan, Kong; Jianjun, Zhou; Cen, Kong; Xinxin, Yu; Xun, Dong; Tangsheng, Chen

    2016-06-01

    We present high-performance enhancement-mode AlGaN/GaN metal—oxide—semiconductor high-electron mobility transistors (MOS-HEMTs) by a fluorinated gate dielectric technique. A nanolaminate of an Al2O3/La x Al1-x O 3/Al2O3 stack (x≈0.33) grown by atomic layer deposition is employed to avoid fluorine ions implantation into the scaled barrier layer. Fabricated enhancement-mode MOS-HEMTs exhibit an excellent performance as compared to those with the conventional dielectric-last technique, delivering a large maximum drain current of 916 mA/mm and simultaneously a high peak transconductance of 342 mS/mm. The balanced DC characteristics indicate that advanced gate stack dielectrics combined with buffered fluorine ions implantation have a great potential for high speed GaN E/D-mode integrated circuit applications. Project supported by the National Natural Science Foundation of China (Nos. 61504125, 61474101, 61106130 61076120, 61505181), and the Natural Science Foundation of Jiangsu Province of China (Nos. BK20131072, BE2012007, BK2012516).

  15. Direct imaging of band profile in single layer MoS2 on graphite: metallic edge states and the lateral Schottky barrier

    NASA Astrophysics Data System (ADS)

    Zhang, Chendong; Hsu, Chang-Lung; Chang, Yong-Huang; Li, Lain-Jong; Shih, Chih-Kang

    2014-03-01

    Recently, single layer (SL) Transition metal dichalcogenides MX2 has attracted intense interests as the band structures change from indirect to direct gap. In addition, the valley degeneracy is also lifted in SL MX2. These properties have important implications in nanoelectronics and optoelectronics. The SL MX2 islands often come with a triangular form with straight edges and it has been shown theoretically these are zig-zag edge with metallic states. Here we use scanning tunneling microscopy/spectroscopy (STM/S) to map out the electronic structure of single layer MoS2 grown on HOPG (highly oriented pyrolytic graphite) using CVD. In the region away from the edge, the MoS2 band profile shows a homogeneous band gap of about 1.95 +/- 0.1 eV, consistent with the optical studies before. Moreover, the Fermi level locates at 0.15 +/- 0.05 eV below the conduction band minimum (CBM), confirming its n-type nature. The band profile is bend upward by about 0.5 eV within 5 nm from the edge. At the edge, the metallic nature is observed from finite conductivity in the gap region. This study shows that the bulk SL MoS2 and its metallic edge formed a lateral Schottky barrier with a narrow depletion region of 5 nm and the Fermi level is pinned at 0.65 eV below the CBM.

  16. Free standing TiO2 nanotube array electrodes with an ultra-thin Al2O3 barrier layer and TiCl4 surface modification for highly efficient dye sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Gao, Xianfeng; Guan, Dongsheng; Huo, Jingwan; Chen, Junhong; Yuan, Chris

    2013-10-01

    Dye sensitized solar cells were fabricated with free standing TiO2 nanotube (TNT) array films, which were prepared by template assisted atomic layer deposition (ALD) with precise wall thickness control. Efforts to improve the photovoltaic performance were made by using Al2O3 barrier layer coating in conjunction with TiCl4 surface modification. An Al2O3 thin layer was deposited on the TNT electrode by ALD to serve as the charge recombination barrier, but it suffers from the drawback of decreasing the photoelectron injection from dye into TiO2 when the barrier layer became too thick. With the TiCl4 treatment in combination with optimal thickness coating, this problem could be avoided. The co-surface treated electrode presents superior surface property with low recombination rate and good electron transport property. A high conversion efficiency of 8.62% is obtained, which is about 1.8 times that of the device without surface modifications.Dye sensitized solar cells were fabricated with free standing TiO2 nanotube (TNT) array films, which were prepared by template assisted atomic layer deposition (ALD) with precise wall thickness control. Efforts to improve the photovoltaic performance were made by using Al2O3 barrier layer coating in conjunction with TiCl4 surface modification. An Al2O3 thin layer was deposited on the TNT electrode by ALD to serve as the charge recombination barrier, but it suffers from the drawback of decreasing the photoelectron injection from dye into TiO2 when the barrier layer became too thick. With the TiCl4 treatment in combination with optimal thickness coating, this problem could be avoided. The co-surface treated electrode presents superior surface property with low recombination rate and good electron transport property. A high conversion efficiency of 8.62% is obtained, which is about 1.8 times that of the device without surface modifications. Electronic supplementary information (ESI) available: UV-Vis spectra of desorbed N719 dyes from

  17. Joint assimilation of Aquarius-derived sea surface salinity and AVHRR-derived sea surface temperature in an ocean general circulation model using SEEK filter: Implication for mixed layer depth and barrier layer thickness

    NASA Astrophysics Data System (ADS)

    Chakraborty, Abhisek; Sharma, Rashmi; Kumar, Raj; Basu, Sujit

    2015-10-01

    Sea surface salinity (SSS) from Aquarius mission and sea surface temperature (SST) from Advanced Very High Resolution Radiometer (AVHRR) for the years 2012-2014 are assimilated into the global Massachusetts Institute of Technology General Circulation Model (MITGCM). Investigation of the impact of assimilation of these two data sets on simulated mixed layer depth (MLD) and barrier layer thickness (BLT) forms the core of our study. The method of assimilation is the Singular Evolutive Extended Kalman (SEEK) filter. Several assimilation runs are performed. Single-parameter assimilation, as well as joint assimilation, is conducted. To begin with, the model simulated SST and SSS are compared with independent Argo observations of these two parameters. Use of latitudinally varying error variances, which is a novel feature of our study, gives rise to the significant improvement in the simulation of SSS and SST. The best result occurs when joint assimilation is performed. Afterward, simulated MLD and BLT are compared with the same parameters derived from Argo observations forming an independent validation data set. Comparisons are performed both in temporal and spatial domains. Significant positive impact of assimilation is found in all the cases studied, and joint assimilation is found to outperform single-parameter assimilation in each of the cases considered. It is found that simulations of MLD and BLT improve up to 24% and 29%, respectively, when a joint assimilation of SSS and SST is carried out.

  18. Performance of two-layer thermal barrier systems on directionally solidified Ni-Al-Mo and comparative effects of alloy thermal expansion on system life

    NASA Technical Reports Server (NTRS)

    Stecura, S.

    1980-01-01

    A promising two-layer thermal barrier coating system (TBS), Ni-16.4Cr-5.1A1-0.15Y/ZrO2-6.1Y2O3 (all in weight percent), was identified for directionally solidified Ni-Al-Mo (gamma/gamma' alpha). In cyclic furnace tests at 1095 C this system on gamma/gamma' alpha was better than Ni-16. 4Cr-5.1Al-0.15Y/ZrO2-7.8Y2O3 by about 50 percent. In natural gas - oxygen torch rig tests at 1250 C the ZrO2-6.1Y2O3 coating was better than the ZrO2-7.8Y2O3 coating by 95 percent, on MAR-M509 substrates and by 60 percent on gamma/gamma' alpha substrates. Decreasing the coefficient of thermal expansion of the substrate material from 17-18x10 to the -6 power/C (MAR-M200 + Hf and MAR-M509) to 11x10 to the -6 power/C (gamma/gamma' alpha) also resulted in improved TBS life. For example, in natural gas - oxygen torch rig tests at 1250 C, the life of Ni-16.4Cr-5.1Al-0.15Y/ZrO26.1Y2O3 was about 30 percent better on gamma/gamma' alpha than on MAR-M509 substrates. Thus compositional changes in the bond and thermal barrier coatings were shown to have a greater effect on TBS life than does the coefficient of thermal expansion.

  19. Underground waste barrier structure

    DOEpatents

    Saha, Anuj J.; Grant, David C.

    1988-01-01

    Disclosed is an underground waste barrier structure that consists of waste material, a first container formed of activated carbonaceous material enclosing the waste material, a second container formed of zeolite enclosing the first container, and clay covering the second container. The underground waste barrier structure is constructed by forming a recessed area within the earth, lining the recessed area with a layer of clay, lining the clay with a layer of zeolite, lining the zeolite with a layer of activated carbonaceous material, placing the waste material within the lined recessed area, forming a ceiling over the waste material of a layer of activated carbonaceous material, a layer of zeolite, and a layer of clay, the layers in the ceiling cojoining with the respective layers forming the walls of the structure, and finally, covering the ceiling with earth.

  20. Determination of gain in AlGaN cladding free nitride laser diodes

    SciTech Connect

    Muziol, G.; Turski, H.; Wolny, P.

    2013-08-05

    The optical gain spectra of InGaN-based multiple-quantum-well (MQW) laser diodes (LDs) grown by plasma-assisted molecular beam epitaxy are compared for different emission wavelengths. Two AlGaN cladding free LDs with similar epitaxial structures but with different In compositions in MQW were grown to study the dependence of material gain on lasing wavelength. As the emission wavelength increased from 432 to 458 nm, the differential modal gain decreased from 5.7 to 4.7 cm/kA, and the optical losses increased from 40 to 46 cm{sup −1} resulting in an increase in threshold current density. This dependence is attributed to lower optical mode confinement of LD emitting at longer wavelength. We found a strong decrease of confinement factor with increasing wavelength.

  1. Growth and characterization of AlGaN films on patterned sapphire substrates

    NASA Astrophysics Data System (ADS)

    Kwak, Y. S.; Lee, D. S.; Kim, K. H.; Kim, W. H.; Moon, S. W.

    2011-12-01

    A GaN film and two AlGaN films with Al compositions of 5% and 10% have been grown on the patterned sapphire substrates (PSSs) by metal organic chemical vapor deposition (MOCVD). Optical properties and crystalline qualities of the films have been investigated. The GaN film and the Al0.05Ga0.95N film are almost entirely coalesced except for some point defects. However, the Al0.1Ga0.9N film contains large pits encircled by small pits adjacent to them. The large pits are distributed in the same manner with the PSS arrangement. Dislocations and inversion domain boundaries were also observed in the Al0.1Ga0.9N film.

  2. Deep-ultraviolet polychromatic emission from three-dimensionally structured AlGaN quantum wells

    NASA Astrophysics Data System (ADS)

    Kataoka, Ken; Funato, Mitsuru; Kawakami, Yoichi

    2017-03-01

    Three-dimensional (3D) AlGaN/AlN quantum wells (QWs) were fabricated on trench-patterned AlN templates using a regrowth technique based on metalorganic vapor phase epitaxy. The 3D structures are composed of planar (0001) facets, \\{ 1\\bar{1}01\\} facets, and misoriented (0001) planes with bunched steps. Cathodoluminescence spectroscopy revealed double-peaked deep-ultraviolet (DUV) emissions: the shorter-wavelength emission was attributed to the (0001) facets, whereas the longer-wavelength emission arose from bunched step structures located around the bottom corner of the AlN trench, a region in which the AlGaN QWs possessed a relatively high Ga concentration and a thick well width compared with planar (0001) QWs.

  3. Deep ultraviolet photoluminescence of Tm-doped AlGaN alloys

    SciTech Connect

    Nepal, N.; Zavada, J. M.; Lee, D. S.; Steckl, A. J.; Sedhain, A.; Lin, J. Y.; Jiang, H. X.

    2009-03-16

    The ultraviolet (UV) photoluminescence (PL) properties of Tm-doped Al{sub x}Ga{sub 1-x}N (0.39{<=}x{<=}1) alloys grown by solid-source molecular beam epitaxy were probed using above-bandgap excitation from a laser source at 197 nm. The PL spectra show dominant UV emissions at 298 and 358 nm only for samples with x=1 and 0.81. Temperature dependence of the PL intensities of these emission lines reveals exciton binding energies of 150 and 57 meV, respectively. The quenching of these UV emissions appears related to the thermal activation of the excitons bound to rare-earth structured isovalent (RESI) charge traps, which transfer excitonic energy to Tm{sup 3+} ions resulting in the UV emissions. A model of the RESI trap levels in AlGaN alloys is presented.

  4. Electronic properties of GaSe, InSe, GaS and GaTe layered semiconductors: charge neutrality level and interface barrier heights

    NASA Astrophysics Data System (ADS)

    Brudnyi, V. N.; Sarkisov, S. Yu; Kosobutsky, A. V.

    2015-11-01

    Density functional theory calculations have been applied to study the structural and electronic properties of layered ɛ-GaSe, γ-InSe, β-GaS and GaTe compounds. The optimized lattice parameters have been obtained using vdW-DF2-C09 exchange-correlation functional, which is able to describe dispersion forces and produces interlayer distances in close agreement with experiments. Based on the calculated electronic band structures, the energy position of the charge neutrality level (CNL) in the III-VI semiconductors has been estimated for the first time. The room-temperature values of CNL are found to be 0.80 eV, 1.02 eV, 0.72 eV and 0.77 eV for ɛ-GaSe, β-GaS, GaTe and γ-InSe, respectively. The persistent p-type conductivity of the intentionally undoped ɛ-GaSe, β-GaS and GaTe and n-type conductivity of γ-InSe crystals are discussed and explained using the concept of CNL. We also estimated the barrier heights for a number of metal/semiconductor and semiconductor/semiconductor interfaces assuming partial Fermi level pinning at the CNL. A reasonable agreement between our calculations and the available experimental data has been obtained.

  5. Increased electro-optic effect in a guest–host electro-optic polymer by adding PEDOT:PSS as an interfacial barrier layer

    NASA Astrophysics Data System (ADS)

    Jouane, Youssef; Luo, Jingdong; K-Y Jen, Alex; Enami, Yasufumi

    2017-04-01

    We used an ellipsometric reflective technique developed by Teng and Man to measure the electrooptic (EO) coefficients of poled thin films in EO multilayer devices with and without a poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) conductive barrier layer (CBL). The EO coefficients for the device containing PEDOT:PSS were 260 and 215 pm V‑1 at 1.31 and 1.55 μm, respectively, which are higher than those for the device without the CBL. Indeed, the highest EO coefficient for the EO polymer poled without TiO2 or the CBL was 166 pm V‑1 at 1.55 μm, consistent with that obtained for our modulator devices (160 pm V‑1). We investigated the electrical properties, surface morphology, and optical quality of a PEDOT:PSS CBL in EO polymer/TiO2 multilayer-slot waveguide modulators. We demonstrated that the PEDOT:PSS functions as an efficient CBL to pole EO polymers in hybrid EO polymer/TiO2 vertical-slot waveguide modulators.

  6. Deep UV AlGaN light emitting diodes grown by gas source molecular beam epitaxy on sapphire and AlGaN/sapphire substrates

    NASA Astrophysics Data System (ADS)

    Nikishin, S.; Borisov, B.; Kuryatkov, V.; Usikov, A.; Dmitriev, V.; Holtz, M.

    2006-02-01

    We report the electrical and optical properties of deep ultraviolet light emitting diodes (LEDs) based on digital alloy structures (DAS) of AlN/Al 0.08Ga 0.92N grown by gas source molecular beam epitaxy with ammonia on sapphire substrates and AlGaN/sapphire templates. AlGaN/sapphire templates were grown by recently developed stress controlled hydride vapor phase epitaxy (HVPE). For DAS with effective bandgap of 5.1 eV we obtain room temperature electron concentrations up to 1x10 19 cm -3 and hole concentrations of 1x10 18 cm -3. Based on these results we prepared double heterostructure (DHS) LEDs operating in the range of 250 to 290 nm. The emission wavelengths were controlled through the effective bandgap of the active region. The possible ways for increase of LED's efficiency are discussed. We observed significant improvement in the room temperature luminescence efficiency (by factor of 100) of AlGaN quantum wells when a transition growth mode is induced by reduced flux of ammonia. We found that active layer grown on HVPE AlGaN/sapphire substrates have higher luminescence efficiency (by factor of 3) than DAS grown on sapphire.

  7. Low-temperature growth of high quality In{sub x}Ga{sub 1{minus}x}N by atomic layer epitaxy

    SciTech Connect

    Boutros, K.S.; Roberts, J.C.; McIntosh, F.G.; Piner, E.L.; El-Masry, N.A.; Bedair, S.M.

    1996-11-01

    The authors report on the low temperature epitaxial growth of In{sub x}Ga{sub 1{minus}x}N with 0 {le} x {le} 0.27 by Atomic Layer Epitaxy (ALE). GaN and InGaN single crystal films have been grown by ALE in the temperature range between 600 and 700 C using the rotating substrate approach. Films were deposited on sapphire substrates using TMG, EdMIn, and NH{sub 3} as precursors. Up to 27% indium content has been achieved in the InGaN films. The FWHM of the (0002) InGaN peak by double crystal X-ray diffraction of these films was a small as 5 minutes. Room-temperature photoluminescence (PL) from these films was dominated by band edge emission between 365 nm and 446 nm. AlGaN/InGaN double heterostructures were grown in a hybrid reactor, in which the AlGaN barrier layers were grown by MOCVD and the InGaN active layer by ALE. The structures showed good crystal quality, and sharp PL emission with peak intensity at 410 nm.

  8. Enhancing the light extraction efficiency of AlGaN deep ultraviolet light emitting diodes by using nanowire structures

    SciTech Connect

    Djavid, Mehrdad; Mi, Zetian

    2016-02-01

    The performance of conventional AlGaN deep ultraviolet light emitting diodes has been limited by the extremely low light extraction efficiency (<10%), due to the unique transverse magnetic (TM) polarized light emission. Here, we show that, by exploiting the lateral side emission, the extraction efficiency of TM polarized light can be significantly enhanced in AlGaN nanowire structures. Using the three-dimensional finite-difference time domain simulation, we demonstrate that the nanowire structures can be designed to inhibit the emission of guided modes and redirect trapped light into radiated modes. A light extraction efficiency of more than 70% can, in principle, be achieved by carefully optimizing the nanowire size, nanowire spacing, and p-GaN thickness.

  9. Electrical detection of kidney injury molecule-1 with AlGaN /GaN high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Wang, H. T.; Kang, B. S.; Ren, F.; Pearton, S. J.; Johnson, J. W.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.

    2007-11-01

    AlGaN /GaN high electron mobility transistors (HEMTs) were used to detect kidney injury molecule-1 (KIM-1), an important biomarker for early kidney injury detection. The gate region consisted of 5nm gold deposited onto the AlGaN surface. The gold was conjugated to highly specific KIM-1 antibodies through a self-assembled monolayer of thioglycolic acid. The HEMT source-drain current showed a clear dependence on the KIM-1 concentration in phosphate-buffered saline solution. The limit of detection was 1ng/ml using a 20×50μm2 gate sensing area. This approach shows potential for both preclinical and clinical kidney injury diagnosis with accurate, rapid, noninvasive, and high throughput capabilities.

  10. Cu diffusion in single-crystal and polycrystalline TiN barrier layers: A high-resolution experimental study supported by first-principles calculations

    SciTech Connect

    Mühlbacher, Marlene; Bochkarev, Anton S.; Mendez-Martin, Francisca; Schalk, Nina; Mitterer, Christian; Sartory, Bernhard; Chitu, Livia; Popov, Maxim N.; Spitaler, Jürgen; Puschnig, Peter; Ding, Hong; Lu, Jun; Hultman, Lars

    2015-08-28

    Dense single-crystal and polycrystalline TiN/Cu stacks were prepared by unbalanced DC magnetron sputter deposition at a substrate temperature of 700 °C and a pulsed bias potential of −100 V. The microstructural variation was achieved by using two different substrate materials, MgO(001) and thermally oxidized Si(001), respectively. Subsequently, the stacks were subjected to isothermal annealing treatments at 900 °C for 1 h in high vacuum to induce the diffusion of Cu into the TiN. The performance of the TiN diffusion barrier layers was evaluated by cross-sectional transmission electron microscopy in combination with energy-dispersive X-ray spectrometry mapping and atom probe tomography. No Cu penetration was evident in the single-crystal stack up to annealing temperatures of 900 °C, due to the low density of line and planar defects in single-crystal TiN. However, at higher annealing temperatures when diffusion becomes more prominent, density-functional theory calculations predict a stoichiometry-dependent atomic diffusion mechanism of Cu in bulk TiN, with Cu diffusing on the N sublattice for the experimental N/Ti ratio. In comparison, localized diffusion of Cu along grain boundaries in the columnar polycrystalline TiN barriers was detected after the annealing treatment. The maximum observed diffusion length was approximately 30 nm, yielding a grain boundary diffusion coefficient of the order of 10{sup −16} cm{sup 2} s{sup −1} at 900 °C. This is 10 to 100 times less than for comparable underdense polycrystalline TiN coatings deposited without external substrate heating or bias potential. The combined numerical and experimental approach presented in this paper enables the contrasting juxtaposition of diffusion phenomena and mechanisms in two TiN coatings, which differ from each other only in the presence of grain boundaries.

  11. Free standing TiO2 nanotube array electrodes with an ultra-thin Al2O3 barrier layer and TiCl4 surface modification for highly efficient dye sensitized solar cells.

    PubMed

    Gao, Xianfeng; Guan, Dongsheng; Huo, Jingwan; Chen, Junhong; Yuan, Chris

    2013-11-07

    Dye sensitized solar cells were fabricated with free standing TiO2 nanotube (TNT) array films, which were prepared by template assisted atomic layer deposition (ALD) with precise wall thickness control. Efforts to improve the photovoltaic performance were made by using Al2O3 barrier layer coating in conjunction with TiCl4 surface modification. An Al2O3 thin layer was deposited on the TNT electrode by ALD to serve as the charge recombination barrier, but it suffers from the drawback of decreasing the photoelectron injection from dye into TiO2 when the barrier layer became too thick. With the TiCl4 treatment in combination with optimal thickness coating, this problem could be avoided. The co-surface treated electrode presents superior surface property with low recombination rate and good electron transport property. A high conversion efficiency of 8.62% is obtained, which is about 1.8 times that of the device without surface modifications.

  12. Sorption of Pb(II), Cr(III), Cu(II), As(III) to peat, and utilization of the sorption properties in industrial waste landfill hydraulic barrier layers.

    PubMed

    Koivula, Minna P; Kujala, Kauko; Rönkkömäki, Hannu; Mäkelä, Mauri

    2009-05-15

    The low conductivity landfill barrier layers protect the groundwater and soil by limiting the water flow through the bottom layers of the landfill material. Many materials used in hydraulic barrier layers also have sorption properties which could be used to reduce environmental risks. The adsorption of lead, chromium, copper, and arsenic to peat was studied with a batch-type test and a column test for compacted peat, both without pH adjustment in acidic conditions. Peat adsorbed all the metals well, 40000mg/kg of lead, 13000mg/kg of chromium, and 8400mg/kg of copper in the column test. Arsenic was only tested in a batch-type test, and in that peat adsorbed 60mg/kg of arsenic. The column test showed heavy metals to be adsorbed on the surface layers of the compacted peat sample, on the first centimeter of the sample. The adsorption was much greater in the column test than in the batch-type test, partly due to the different pH conditions and the buffer capacity of the peat in the column test. The liquid/solid ratio of the column experiment represented a time period of approximately 40 years in a landfill, under Finnish climate conditions. The hydraulic conductivity of the peat decreased as it was compressed, but it already met the hydraulic conductivity limits set by European Union legislation for the hydraulic barrier layer (1x10(-9)m/s at a pressure of 150kPa for a 5-m layer), with a pressure of 50kPa. The results show that peat would be an excellent material to construct compacted, low hydraulic conductivity layers with adsorption properties in, e.g. industrial waste landfills.

  13. Interfacial design and structure of protein/polymer films on oxidized AlGaN surfaces

    NASA Astrophysics Data System (ADS)

    Gupta, Samit K.; Wu, Hao-Hsuan; Kwak, Kwang J.; Casal, Patricia; Nicholson, Theodore R., III; Wen, Xuejin; Anisha, R.; Bhushan, Bharat; Berger, Paul R.; Lu, Wu; Brillson, Leonard J.; Lee, Stephen Craig

    2011-01-01

    Protein detection using biologically or immunologically modified field-effect transistors (bio/immunoFETs) depends on the nanoscale structure of the polymer/protein film at sensor interfaces (Bhushan 2010 Springer Handbook of Nanotechnology 3rd edn (Heidelberg: Springer); Gupta et al 2010 The effect of interface modification on bioFET sensitivity, submitted). AlGaN-based HFETs (heterojunction FETs) are attractive platforms for many protein sensing applications due to their electrical stability in high osmolarity aqueous environments and favourable current drive capabilities. However, interfacial polymer/protein films on AlGaN, though critical to HFET protein sensor function, have not yet been fully characterized. These interfacial films are typically comprised of protein-polymer films, in which analyte-specific receptors are tethered to the sensing surface with a heterobifunctional linker molecule (often a silane molecule). Here we provide insight into the structure and tribology of silane interfaces composed of one of two different silane monomers deposited on oxidized AlGaN, and other metal oxide surfaces. We demonstrate distinct morphologies and wear properties for the interfacial films, attributable to the specific chemistries of the silane monomers used in the films. For each specific silane monomer, film morphologies and wear are broadly consistent on multiple oxide surfaces. Differences in interfacial film morphology also drive improvements in sensitivity of the underlying HFET (coincident with, though not necessarily caused by, differences in interfacial film thickness). We present a testable model of the hypothetical differential interfacial depth distribution of protein analytes on FET sensor interfaces with distinct morphologies. Empirical validation of this model may rationalize the actual behaviour of planar immunoFETs, which has been shown to be contrary to expectations of bio/immunoFET behaviour prevalent in the literature for the last 20 years

  14. Two-layer thermal-barrier systems for Ni-Al-Mo alloy and effects of alloy thermal expansion on system life

    NASA Technical Reports Server (NTRS)

    Stecura, S.

    1982-01-01

    Cyclic furnace and cyclic natural gas-oxygen torch rig tests were conducted to (1) identify a thermal-barrier system for a nickel-aluminum-molybdenum alloy, (2) study the oxidation of the bond coating, and (3) study the effect of the substrate coefficient of thermal expansion on thermal barrier system life. It is found that the latter is affected by the composition of the bond coating, yttria concentration in zirconia, and the coefficient of thermal expansion of the substrate material. In addition, small compositional changes in the bond and thermal barrier coatings have greater effect on thermal barrier system life than the 40% increase in the coefficient of thermal expansion of the substrate material. No simple relation exists between the weight gain caused by bond-coating oxidation with increasing yttria concentration in zirconia and increasing bond coating thickness on the one hand, and thermal barrier system life on the other.

  15. Fabrication of Very High Efficiency 5.8 GHz Power Amplifiers using AlGaN HFETs on SiC Substrates for Wireless Power Transmission

    NASA Technical Reports Server (NTRS)

    Sullivan, Gerry

    2001-01-01

    For wireless power transmission using microwave energy, very efficient conversion of the DC power into microwave power is extremely important. Class E amplifiers have the attractive feature that they can, in theory, be 100% efficient at converting, DC power to RF power. Aluminum gallium nitride (AlGaN) semiconductor material has many advantageous properties, relative to silicon (Si), gallium arsenide (GaAs), and silicon carbide (SiC), such as a much larger bandgap, and the ability to form AlGaN/GaN heterojunctions. The large bandgap of AlGaN also allows for device operation at higher temperatures than could be tolerated by a smaller bandgap transistor. This could reduce the cooling requirements. While it is unlikely that the AlGaN transistors in a 5.8 GHz class E amplifier can operate efficiently at temperatures in excess of 300 or 400 C, AlGaN based amplifiers could operate at temperatures that are higher than a GaAs or Si based amplifier could tolerate. Under this program, AlGaN microwave power HFETs have been fabricated and characterized. Hybrid class E amplifiers were designed and modeled. Unfortunately, within the time frame of this program, good quality HFETs were not available from either the RSC laboratories or commercially, and so the class E amplifiers were not constructed.

  16. Barrier Formation

    PubMed Central

    Lyaruu, D.M.; Medina, J.F.; Sarvide, S.; Bervoets, T.J.M.; Everts, V.; DenBesten, P.; Smith, C.E.; Bronckers, A.L.J.J.

    2014-01-01

    Enamel fluorosis is an irreversible structural enamel defect following exposure to supraoptimal levels of fluoride during amelogenesis. We hypothesized that fluorosis is associated with excess release of protons during formation of hypermineralized lines in the mineralizing enamel matrix. We tested this concept by analyzing fluorotic enamel defects in wild-type mice and mice deficient in anion exchanger-2a,b (Ae2a,b), a transmembrane protein in maturation ameloblasts that exchanges extracellular Cl− for bicarbonate. Defects were more pronounced in fluorotic Ae2a,b−/− mice than in fluorotic heterozygous or wild-type mice. Phenotypes included a hypermineralized surface, extensive subsurface hypomineralization, and multiple hypermineralized lines in deeper enamel. Mineral content decreased in all fluoride-exposed and Ae2a,b−/− mice and was strongly correlated with Cl−. Exposure of enamel surfaces underlying maturation-stage ameloblasts to pH indicator dyes suggested the presence of diffusion barriers in fluorotic enamel. These results support the concept that fluoride stimulates hypermineralization at the mineralization front. This causes increased release of protons, which ameloblasts respond to by secreting more bicarbonates at the expense of Cl− levels in enamel. The fluoride-induced hypermineralized lines may form barriers that impede diffusion of proteins and mineral ions into the subsurface layers, thereby delaying biomineralization and causing retention of enamel matrix proteins. PMID:24170372

  17. Influence of the Thickness of the Barrier Layer in Nanoheterostructures and the Gate-Drain Capacitance on the Microwave and Noise Parameters of Field-Effect AlGaN/GaN HEMT

    NASA Astrophysics Data System (ADS)

    Mikhaylovich, S. V.; Fedorov, Yu. V.

    2016-07-01

    We perform a computational and analytical study of how the thickness of the barrier layer in nanoheterostructures and the gate-drain capacitance C gd influence the microwave parameters (limiting frequency of current amplification and maximum generation frequency) and noise parameters (noise factor) of a field-effect AlGaN/GaN high electron mobility transistor. The results of complex measurements of the parameters of such transistors based on nanoheterostructures with a barrier layer thickness of 3.5-15.7 nm, which were performed within the framework of four technological routes in the range 0.1-67 GHz, are presented. It is shown that in order to reduce the noise ratio and improve the microwave parameters, it is necessary to optimize both the parameters of nanoheterostructures and the manufacturing techniques. In particular, the thickness of the barrier layer should be reduced, and the gate length should be chosen such as to maximize the product of the squared maximum current amplification frequency in the interior of the transistor and the output impedance between the drain and the source. Additionally, attention should be given to the shape of the gate to reduce the capacitance C gd. Under certain conditions of manufacture of nitride field-effect HEMT, one can achieve a lower noise factor compared with the transistors based on arsenide nanoheterostructures.

  18. The origin of low water vapor transmission rates through Al2O3/ZrO2 nanolaminate gas-diffusion barriers grown by atomic layer deposition

    SciTech Connect

    Meyer, Jens; Schmidt, H.; Kowalsky, W.; Riedl, T.; Kahn, Antoine

    2010-01-01

    This paper reports on thin film gas-diffusion barriers consisting of Al2 O3 /ZrO2 nanolaminates (NL) grown by low-temperature (80 °C) atomic layer deposition. We show that reliable barriers with water vapor transmission rates of 3.2×10-4 g/(m2 day) , measured at 80 °C and 80% relative humidity, can be realized with very thin layers down to 40 nm. We determine that ZrO2 acts as anticorrosion element in our NL. Furthermore, we demonstrate by x-ray photoemission spectroscopy that an aluminate phase is formed at the interfaces between Al2 O3 and ZrO2 sublayers, which additionally improves the gas-diffusion barrier due to a densification of the layer system. These Al2 O3 /ZrO2 NLs prepared at low temperatures hold considerable promises for application in organic electronics and beyond.

  19. Plasma enhanced chemical vapor deposition of metalboride interfacial layers as diffusion barriers for nanostructured diamond growth on cobalt containing alloys CoCrMo and WC-Co

    NASA Astrophysics Data System (ADS)

    Johnston, Jamin M.

    This work is a compilation of theory, finite element modeling and experimental research related to the use of microwave plasma enhanced chemical vapor deposition (MPECVD) of diborane to create metal-boride surface coatings on CoCrMo and WC-Co, including the subsequent growth of nanostructured diamond (NSD). Motivation for this research stems from the need for wear resistant coatings on industrial materials, which require improved wear resistance and product lifetime to remain competitive and satisfy growing demand. Nanostructured diamond coatings are a promising solution to material wear but cannot be directly applied to cobalt containing substrates due to graphite nucleation. Unfortunately, conventional pre-treatment methods, such as acid etching, render the substrate too brittle. Thus, the use of boron in a MPECVD process is explored to create robust interlayers which inhibit carbon-cobalt interaction. Furthermore, modeling of the MPECVD process, through the COMSOL MultiphysicsRTM platform, is performed to provide insight into plasma-surface interactions using the simulation of a real-world apparatus. Experimental investigation of MPECVD boriding and NSD deposition was conducted at surface temperatures from 700 to 1100 °C. Several well-adhered metal-boride surface layers were formed: consisting of CoB, CrB, WCoB, CoB and/or W2CoB2. Many of the interlayers were shown to be effective diffusion barriers against elemental cobalt for improving nucleation and adhesion of NSD coatings; diamond on W2CoB2 was well adhered. However, predominantly WCoB and CoB phase interlayers suffered from diamond film delamination. Metal-boride and NSD surfaces were evaluated using glancing-angle x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), cross-sectional scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDS), micro-Raman spectroscopy, nanoindentation, scratch testing and epoxy pull testing. COMSOL MultiphysicsRTM was used to construct a

  20. Schottky barrier solar cell

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.; Yeh, Y. C. M. (Inventor)

    1981-01-01

    A method of fabricating a Schottky barrier solar cell is described. The cell consists of a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive. A thin layer of heavily doped n-type polycrystalling germanium is deposited on the substrate after a passivation layer is deposited to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes to serve as a base layer on which a thin layer of gallium arsenide is vapor-epitaxilly grown followed by a thermally-grown oxide layer. A metal layer is deposited on the oxide layer and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer.

  1. Characteristics of WN{sub x}C{sub y} films deposited using remote plasma atomic layer deposition with ({sup Me}Cp)W(CO){sub 2}(NO) for Cu diffusion barrier

    SciTech Connect

    Kim, Hyunjung; Park, Jingyu; Jeon, Heeyoung; Jang, Woochool; Jeon, Hyeongtag; Yuh, Junhan

    2015-09-15

    Diffusion barrier characteristics of tungsten–nitride–carbide (WN{sub x}C{sub y}) thin films interposed between Cu and SiO{sub 2} layers were studied. The WN{sub x}C{sub y} films were deposited by remote plasma atomic layer deposition (RPALD) using a metal organic source, ({sup Me}Cp)W(CO){sub 2}(NO), and ammonia. Auger electron spectroscopy analysis indicated the WN{sub x}C{sub y} films consisted of tungsten, nitrogen, carbon, and oxygen. X-ray diffraction (XRD) analysis showed that the film deposited at 350 °C was nanocrystalline. The resistivity of WN{sub x}C{sub y} film deposited by RPALD was very low compared to that in previous research because of the lower nitrogen content and different crystal structures of the WN{sub x}C{sub y}. To verify the diffusion barrier characteristics of the WN{sub x}C{sub y} film, Cu films were deposited by physical vapor deposition after WN{sub x}C{sub y} film was formed by RPALD on Si substrate. The Cu/WN{sub x}C{sub y}/Si film stack was annealed in a vacuum by rapid thermal annealing at 500 °C. Cu diffusion through the barrier layer was verified by XRD. Stable film properties were observed up to 500 °C, confirming that WN{sub x}C{sub y} film is suitable as a Cu diffusion barrier in microelectronic circuits.

  2. Catalytic thermal barrier coatings

    DOEpatents

    Kulkarni, Anand A.; Campbell, Christian X.; Subramanian, Ramesh

    2009-06-02

    A catalyst element (30) for high temperature applications such as a gas turbine engine. The catalyst element includes a metal substrate such as a tube (32) having a layer of ceramic thermal barrier coating material (34) disposed on the substrate for thermally insulating the metal substrate from a high temperature fuel/air mixture. The ceramic thermal barrier coating material is formed of a crystal structure populated with base elements but with selected sites of the crystal structure being populated by substitute ions selected to allow the ceramic thermal barrier coating material to catalytically react the fuel-air mixture at a higher rate than would the base compound without the ionic substitutions. Precious metal crystallites may be disposed within the crystal structure to allow the ceramic thermal barrier coating material to catalytically react the fuel-air mixture at a lower light-off temperature than would the ceramic thermal barrier coating material without the precious metal crystallites.

  3. Optimization on the luminous efficiency in AlGaN-based ultraviolet light-emitting diodes by amendment of a superlattice hole reservoir layer

    NASA Astrophysics Data System (ADS)

    Yang, Xian; Sun, Huiqing; Fan, Xuancong; Zhang, Zhuding; Sun, Jie; Yi, Xinyan; Guo, Zhiyou

    2017-01-01

    The application of a p-type superlattice hole reservoir layer in the traditional ultraviolet light-emitting diodes (UVLED) can obtain better Internal quantum efficiency (IQE) and output power, ease the problem about efficient carrier movement in high Al-content AlGaN material. Through computation and analysis by using the APSYS simulation software, the change of position of the hole reservoir layer can influence the luminous efficiency. The design of a superlattice hole reservoir layer between electron blocking layer (EBL) and p-type AlGaN layer can obviously reduce the hole potential height and increase the electron potential height, produce more hole injection and less electron leak, leading to higher carrier concentration, so as to realize the further increased for carrier recombination rate.

  4. Thermal Barrier Coatings

    NASA Technical Reports Server (NTRS)

    1993-01-01

    In order to reduce heat transfer between a hot gas heat source and a metallic engine component, a thermal insulating layer of material is placed between them. This thermal barrier coating is applied by plasma spray processing the thin films. The coating has been successfully employed in aerospace applications for many years. Lewis Research Center, a leader in the development engine components coating technology, has assisted Caterpillar, Inc. in applying ceramic thermal barrier coatings on engines. Because these large engines use heavy fuels containing vanadium, engine valve life is sharply decreased. The barrier coating controls temperatures, extends valve life and reduces operating cost. Additional applications are currently under development.

  5. Optimization of barrier layer thickness in MgSe/CdSe quantum wells for intersubband devices in the near infrared region

    SciTech Connect

    Chen, Guopeng; Shen, Aidong; Tamargo, Maria C.

    2015-10-28

    The authors report the optimization of MgSe barrier thickness in CdSe/MgSe multiple quantum well structures and its effect on structural, optical qualities and intersubband (ISB) transition characteristics. Three samples with the MgSe thicknesses of 2 nm, 3 nm, and 4 nm were grown on InP substrates by molecular beam epitaxy. X-ray diffraction and photoluminescence measurements showed that the thinner the MgSe barrier thickness the better the structural quality. However, ISB absorption was only observed in the sample with a MgSe thickness of 3 nm. Failing to observe ISB absorption in the sample with a thicker MgSe barrier (≥4 nm) is due to the deteriorated material quality while the missing of ISB transition in the sample with thinner barrier (≤2 nm) is due to the tunneling of electrons out of the CdSe wells. The optimized MgSe barrier thickness of around 3 nm is found to be able to suppress the electron tunneling while maintaining a good material quality of the overall structure.

  6. Thermally stable AuBe-based ohmic contacts to p-type GaP for AlGaInP-based light-emitting diode by using a tungsten barrier layer

    NASA Astrophysics Data System (ADS)

    Kim, Dae-Hyun; Kang, Daesung; Park, Jae-Seong; Seong, Tae-Yeon

    2016-01-01

    We investigated how a tungsten diffusion barrier layer affected the electrical properties of AuBe/Au contacts to a p-GaP window layer (na = 5 × 1019 cm-3) for an AlGaInP-based light emitting diode. All of the as-deposited samples were ohmic. After annealing at 500 °C, the AuBe/Au contacts were electrically degraded with a specific contact resistivity of 1.0 × 10-4 Ωcm2. However, the electrical properties of the W-based contacts were improved, having a contact resistivity of 5.0 × 10-6 Ωcm2. The X-ray photoemission spectroscopy (XPS) results showed that the Ga 2 p core level for the annealed AuBe/Au contacts shifted to the high binding-energy side. On the other hand, that for the AuBe/W/Au contacts shifted toward the lower binding-energy side. For the AuBe/Au contacts, both Be and P atoms were shown to be outdiffused into the metal contact after annealing. However, for the AuBe/W/Au contacts, the outdiffusion of Be atoms was prevented by the W barrier layer, and the Be atoms were indiffused into GaP. Based on the X-ray photoemission spectroscopy (XPS), Auger electron spectroscopy (AES), and electrical results, the annealing-induced electrical degradation and improvement are described and discussed.

  7. In-situ fabrication of MoSi2/SiC-Mo2C gradient anti-oxidation coating on Mo substrate and the crucial effect of Mo2C barrier layer at high temperature

    NASA Astrophysics Data System (ADS)

    Liu, Jun; Gong, Qianming; Shao, Yang; Zhuang, Daming; Liang, Ji

    2014-07-01

    MoSi2/SiC-Mo2C gradient coating on molybdenum was in situ prepared with pack cementation process by two steps: (1) carburizing with graphite powder to obtain a Mo2C layer on Mo substrate, and (2) siliconizing with Si powder to get a composite MoSi2/SiC layer on the upper part of Mo2C layer. The microstructure and elemental distribution in the coating were investigated with scanning electron microscopy (SEM), back scattered electron (BSE), energy dispersive spectroscopy (EDS), electron probe microanalysis (EPMA) and X-ray diffraction (XRD). Cyclic oxidation tests (at 500 °C, 1200 °C, 1400 °C and 1600 °C) demonstrated excellent oxidation resistance for the gradient composite coating and the mass loss was only 0.23% in 60 min at 1600 °C. XRD, EPMA, thermal dynamic and phase diagram analyses indicated that the Mo2C barrier layer played the key role in slowing down the diffusion of C and Si toward inner Mo substrate at high temperature and principally this contributed to the excellent anti-oxidation for Mo besides the outer MoSi2/SiC composite layer.

  8. Optically confined polarized resonance Raman studies in identifying crystalline orientation of sub-diffraction limited AlGaN nanostructure

    SciTech Connect

    Sivadasan, A. K. Patsha, Avinash; Dhara, Sandip

    2015-04-27

    An optical characterization tool of Raman spectroscopy with extremely weak scattering cross section tool is not popular to analyze scattered signal from a single nanostructure in the sub-diffraction regime. In this regard, plasmonic assisted characterization tools are only relevant in spectroscopic studies of nanoscale object in the sub-diffraction limit. We have reported polarized resonance Raman spectroscopic (RRS) studies with strong electron-phonon coupling to understand the crystalline orientation of a single AlGaN nanowire of diameter ∼100 nm. AlGaN nanowire is grown by chemical vapor deposition technique using the catalyst assisted vapor-liquid-solid process. The results are compared with the high resolution transmission electron microscopic analysis. As a matter of fact, optical confinement effect due to the dielectric contrast of nanowire with respect to that of surrounding media assisted with electron-phonon coupling of RRS is useful for the spectroscopic analysis in the sub-diffraction limit of 325 nm (λ/2N.A.) using an excitation wavelength (λ) of 325 nm and near ultraviolet 40× far field objective with a numerical aperture (N.A.) value of 0.50.

  9. Coulomb correlation effects and density dependence of radiative recombination rates in polar AlGaN quantum wells

    NASA Astrophysics Data System (ADS)

    Rupper, Greg; Rudin, Sergey; Bertazzi, Francesco; Garrett, Gregory; Wraback, Michael

    2013-03-01

    AlGaN narrow quantum wells are important elements of deep-ultraviolet light emitting devices. The electron-hole radiative recombination rates are important characteristics of these nanostructures. In this work we evaluated their dependence on carrier density and lattice temperature and compared our theoretical results with the experimentally determined radiative lifetimes in the c-plane grown AlGaN quantum wells. The bands were determined in the k .p approximation for a strained c-plane wurtzite quantum well and polarization fields were included in the model. In order to account for Coulomb correlations at relatively high densities of photo-excited electron-hole plasma and arbitrary temperature, we employed real-time Green's function formalism with self-energies evaluated in the self-consistent T-matrix approximation. The luminescence spectrum was obtained from the susceptibility by summing over scattering in-plane directions and polarization states. The recombination coefficient was obtained from the integrated photo-luminescence. The density dependence of the radiative recombination rate shows effects of strong screening of the polarization electric field at high photo-excitation density.

  10. High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

    SciTech Connect

    Bryan, Zachary Bryan, Isaac; Sitar, Zlatko; Collazo, Ramón; Xie, Jinqiao; Mita, Seiji

    2015-04-06

    The internal quantum efficiency (IQE) of Al{sub 0.55}Ga{sub 0.45}N/AlN and Al{sub 0.55}Ga{sub 0.45}N/Al{sub 0.85}Ga{sub 0.15}N UVC MQW structures was analyzed. The use of bulk AlN substrates enabled us to undoubtedly distinguish the effect of growth conditions, such as V/III ratio, on the optical quality of AlGaN based MQWs from the influence of dislocations. At a high V/III ratio, a record high IQE of ∼80% at a carrier density of 10{sup 18 }cm{sup −3} was achieved at ∼258 nm. The high IQE was correlated with the decrease of the non-radiative coefficient A and a reduction of midgap defect luminescence, all suggesting that, in addition to dislocations, point defects are another major factor that strongly influences optical quality of AlGaN MQW structures.

  11. Thermal barrier coating

    DOEpatents

    Bowker, Jeffrey Charles; Sabol, Stephen M.; Goedjen, John G.

    2001-01-01

    A thermal barrier coating for hot gas path components of a combustion turbine based on a zirconia-scandia system. A layer of zirconium scandate having the hexagonal Zr.sub.3 Sc.sub.4 O.sub.12 structure is formed directly on a superalloy substrate or on a bond coat formed on the substrate.

  12. AlGaN UV LED and Photodiodes Radiation Hardness and Space Qualifications and Their Applications in Space Science and High Energy Density Physics

    SciTech Connect

    Sun, K. X.

    2011-05-31

    This presentation provides an overview of robust, radiation hard AlGaN optoelectronic devices and their applications in space exploration & high energy density physics. Particularly, deep UV LED and deep UV photodiodes are discussed with regard to their applications, radiation hardness and space qualification. AC charge management of UV LED satellite payload instruments, which were to be launched in late 2012, is covered.

  13. Improving the electrical properties of lanthanum silicate films on ge metal oxide semiconductor capacitors by adopting interfacial barrier and capping layers.

    PubMed

    Choi, Yu Jin; Lim, Hajin; Lee, Suhyeong; Suh, Sungin; Kim, Joon Rae; Jung, Hyung-Suk; Park, Sanghyun; Lee, Jong Ho; Kim, Seong Gyeong; Hwang, Cheol Seong; Kim, HyeongJoon

    2014-05-28

    The electrical properties of La-silicate films grown by atomic layer deposition (ALD) on Ge substrates with different film configurations, such as various Si concentrations, Al2O3 interfacial passivation layers, and SiO2 capping layers, were examined. La-silicate thin films were deposited using alternating injections of the La[N{Si(CH3)3}2]3 precursor with O3 as the La and O precursors, respectively, at a substrate temperature of 310 °C. The Si concentration in the La-silicate films was further controlled by adding ALD cycles of SiO2. For comparison, La2O3 films were also grown using [La((i)PrCp)3] and O3 as the La precursor and oxygen source, respectively, at the identical substrate temperature. The capacitance-voltage (C-V) hysteresis decreased with an increasing Si concentration in the La-silicate films, although the films showed a slight increase in the capacitance equivalent oxide thickness. The adoption of Al2O3 at the interface as a passivation layer resulted in lower C-V hysteresis and a low leakage current density. The C-V hysteresis voltages of the La-silicate films with Al2O3 passivation and SiO2 capping layers was significantly decreased to ∼0.1 V, whereas the single layer La-silicate film showed a hysteresis voltage as large as ∼1.0 V.

  14. Y0.08Sr0.88TiO3-CeO2 composite as a diffusion barrier layer for stainless-steel supported solid oxide fuel cell

    NASA Astrophysics Data System (ADS)

    Kim, Kun Joong; Kim, Sun Jae; Choi, Gyeong Man

    2016-03-01

    A new diffusion barrier layer (DBL) is proposed for solid oxide fuel cells (SOFCs) supported on stainless-steel where DBL prevents inter-diffusion of atoms between anode and stainless steel (STS) support during fabrication and operation of STS-supported SOFCs. Half cells consisting of dense yttria-stabilized zirconia (YSZ) electrolyte, porous Ni-YSZ anode layer, and ferritic STS support, with or without Y0.08Sr0.88TiO3-CeO2 (YST-CeO2) composite DBL, are prepared by tape casting and co-firing at 1250 and 1350 °C, respectively, in reducing (H2) atmosphere. The porous YST-CeO2 layer (t ∼ 60 μm) blocks inter-diffusion of Fe and Ni, and captures the evaporated Cr during cell fabrication (1350 °C). The cell with DBL and La0.6Sr0.4Co0.2Fe0.8O3-δ (LSCF) cathode achieved a maximum power density of ∼220 mW cm-2 which is stable at 700 °C. In order to further improve the power performance, Ni coarsening in anode during co-firing must be prevented or alternative anode which is resistive to coarsening is suggested. This study demonstrates that the new YST-CeO2 layer is a promising as a DBL for stainless-steel-supported SOFCs fabricated with co-firing process.

  15. Vehicle barrier

    DOEpatents

    Hirsh, Robert A.

    1991-01-01

    A vehicle security barrier which can be conveniently placed across a gate opening as well as readily removed from the gate opening to allow for easy passage. The security barrier includes a barrier gate in the form of a cable/gate member in combination with laterally attached pipe sections fixed by way of the cable to the gate member and lateral, security fixed vertical pipe posts. The security barrier of the present invention provides for the use of cable restraints across gate openings to provide necessary security while at the same time allowing for quick opening and closing of the gate areas without compromising security.

  16. Erratic Dislocations Within Funnel Defects in AlN Templates for AlGaN Epitaxial Layer Growth

    DTIC Science & Technology

    2009-05-21

    optoelectronic devices that operate in the UV region of the electromagnetic spectrum due to their direct tunable band gaps in this energy range1...funnel. A similar process has been observed for V-pits in InGaN /GaN multi quantum wells (MQWs), where it should be noted that the deformation in...the MQW structure leads to localization of charge carriers17, 18. In the case of the MPEG 8 sample shown in Figs. 1 and 2, the material filling

  17. Corrosion-resistant ceramic thermal barrier coating

    NASA Technical Reports Server (NTRS)

    Hodge, P. E.; Levine, S. R.; Miller, R. A.

    1980-01-01

    Two-layer thermal barrier coating, consisting of metal-CrA1Y bond coating and calcium silicate ceramic outer layer, greatly improves resistance of turbine parts to hot corrosion from fuel and air impurities. Both layers can be plasma sprayed, and ceramic layer may be polished to reduce frictional losses. Ceramic provides thermal barrier, so parts operate cooler metal temperatures, coolant flow can be reduced, or gas temperatures increased. Lower grade fuels also can be used.

  18. Hydrogen-isotope permeation barrier

    DOEpatents

    Maroni, Victor A.; Van Deventer, Erven H.

    1977-01-01

    A composite including a plurality of metal layers has a Cu-Al-Fe bronze layer and at least one outer layer of a heat and corrosion resistant metal alloy. The bronze layer is ordinarily intermediate two outer layers of metal such as austenitic stainless steel, nickel alloys or alloys of the refractory metals. The composite provides a barrier to hydrogen isotopes, particularly tritium that can reduce permeation by at least about 30 fold and possibly more below permeation through equal thicknesses of the outer layer material.

  19. Current-Induced Magnetization Switching in MgO Barrier Based Magnetic Tunnel Junctions with CoFeB/Ru/CoFeB Synthetic Ferrimagnetic Free Layer

    NASA Astrophysics Data System (ADS)

    Hayakawa, Jun; Ikeda, Shoji; Lee, Young Min; Sasaki, Ryutaro; Meguro, Toshiyasu; Matsukura, Fumihiro; Takahashi, Hiromasa; Ohno, Hideo

    2006-10-01

    We report the intrinsic critical current density (Jc0) in current-induced magnetization switching and the thermal stability factor (E/kBT, where E, kB, and T are the energy potential, the Boltzmann constant, and temperature, respectively) in MgO based magnetic tunnel junctions with a Co40Fe40B20(2 nm)/Ru(0.7-2.4 nm)/Co40Fe40B20(2 nm) synthetic ferrimagnetic (SyF) free layer. We show that Jc0 and E/kBT can be determined by analyzing the average critical current density as a function of coercivity using the Slonczewski’s model taking into account thermal fluctuation. We find that high antiferromagnetic coupling between the two CoFeB layers in a SyF free layer results in reduced Jc0 without reducing high E/kBT.

  20. Anisotropic capillary barrier for waste site surface covers

    DOEpatents

    Stormont, J.C.

    1996-08-27

    Waste sites are capped or covered upon closure. The cover structure incorporates a number of different layers each having a contributory function. One such layer is the barrier layer. Traditionally the barriers have been compacted soil and geosynthetics. These types of barriers have not been successfully implemented in unsaturated ground conditions like those found in dry climates. Capillary barriers have been proposed as barrier layers in dry environments, but the divergence length of these barriers has been found to be inadequate. An alternative to the capillary barrier is a anisotropic capillary barrier. An anisotropic capillary barrier has an increased divergence length which results in more water being diverted laterally preventing the majority of water from percolating in a downward direction through the barrier. 10 figs.

  1. Fabrication of double barrier structures in single layer c-Si-QDs/a-SiOx films for realization of energy selective contacts for hot carrier solar cells

    NASA Astrophysics Data System (ADS)

    Kar, Debjit; Das, Debajyoti

    2017-01-01

    Thin films of c-Si-QDs embedded in an a-SiOx dielectric matrix forming arrays of double barrier structures have been fabricated by reactive rf-magnetron sputtering at ˜400 °C, without post-deposition annealing. The formation of larger size c-Si-QDs of reduced number density in homogeneous distribution within a less oxygenated a-SiOx matrix at higher plasma pressure introduces systematic widening of the average periodic distance between the adjacent `c-Si-QDs in a-SiOx', as obtained by X-ray reflectivity and transmission electron microscopy studies. A wave-like pattern in the J-E characteristics identifies the formation of periodic double-barrier structures along the path of the movement of charge carriers across the QDs and that those are originated by the a-SiOx dielectric matrix around the c-Si-QDs. A finite distribution of the size of c-Si-QDs introduces a broadening of the current density peak and simultaneously originates the negative differential resistance-like characteristics, which have suitable applications in the energy selective contacts that act as energy filters for hot carrier solar cells. A simple yet effective process technology has been demonstrated. Further initiative on tuning the energy selectivity by reducing the size and narrowing the size-distribution of Si-QDs can emerge superior energy selective contacts for hot carrier solar cells, paving ground for accomplishing all-Si solar cells.

  2. Analysis of an m = 1 electrostatic barrier scrape-off layer as a technique for reducing and controlling the particle and energy losses on the large major radius edge of tokamak

    SciTech Connect

    LaBombard, B.; Conn, R.W.

    1988-12-01

    It is observed in many tokamaks that particle and heat fluxes from the core region are poloidally asymmetric, favoring higher cross field transport on the large major radius edge of the torus. We propose a novel technique that may allow one to control this asymmetric flux into the tokamak boundary plasma. The scheme principally involves the formation of a mobility limited transport layer or 'electrostatic barrier' to inhibit the flow of plasma into the boundary layer at large major radii, forcing plasma to exit on the small major radius side of the torus instead. At the same time, the technique produces an 'ExB divertor' effect, efficiently exhausting plasma and impurities within the boundary layer. The implications of such a scheme are potentially important. By forcing plasma to exit on the inside half of the torus where the intrinsic cross-field transport is lower, the overall confinement characteristics of the central plasma may be improved. Furthermore, scrape-off plasma fluxes, subsequent recycling conditions, and their asymmetries at limiter, divertor, and wall structures can be actively controlled. An important feature of the technique is that it may be employed in both limiter and divertor configurations. The first-order response of the scrape-off layer plasma to the applied bias is estimated in this report using a simple two fluid transport model which includes cross-field diffusion and mobility. It is shown that the influence of an applied bias on the scrape-of layer density e-folding length depends only on the relative magnitudes of cross-field ion and electron mobilities. 17 refs., 6 figs.

  3. Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

    SciTech Connect

    Guo, Wei Bryan, Zachary; Kirste, Ronny; Bryan, Isaac; Hussey, Lindsay; Bobea, Milena; Haidet, Brian; Collazo, Ramón; Sitar, Zlatko; Xie, Jinqiao; Mita, Seiji; Gerhold, Michael

    2014-03-14

    Optical gain spectra for ∼250 nm stimulated emission were compared in three different AlGaN-based structures grown on single crystalline AlN substrates: a single AlGaN film, a double heterostructure (DH), and a Multiple Quantum Well (MQW) structure; respective threshold pumping power densities of 700, 250, and 150 kW/cm{sup 2} were observed. Above threshold, the emission was transverse-electric polarized and as narrow as 1.8 nm without a cavity. The DH and MQW structures showed gain values of 50–60 cm{sup −1} when pumped at 1 MW/cm{sup 2}. The results demonstrated the excellent optical quality of the AlGaN-based heterostructures grown on AlN substrates and their potential for realizing electrically pumped sub-280 nm laser diodes.

  4. High Brightness Fluorescent White Polymer Light-Emitting Diodes by Promoted Hole Injection via Reduced Barrier by Interfacial Dipole Imparted from Chlorinated Indium Tin Oxide to the Hole Injection Layer PEDOT:PSS.

    PubMed

    Syue, Hong-Ren; Hung, Miao-Ken; Chang, Yao-Tang; Lin, Ge-Wei; Lee, Yu-Hsuan; Chen, Show-An

    2017-02-01

    We demonstrated that introducing poly(3,4-ethylenedioxythiophene) polystyrene sulfonate as a hole transport layer (HTL) on top of chlorinated indium tin oxide (Cl-ITO) anode can lead to a deeper highest occupied molecular orbital level of the HTL (promoting from 5.22 to 5.42 eV) due to the interfacial dipole imparted by the Cl-ITO, which allows barrier-free hole injection to the emitting layer with polyspirobifluorene doped with the yellow emitter rubrene and significantly prevents excitons quenching by residual chlorine radicals on the surface of Cl-ITO. By use of poly[9,9-bis(6'-(18-crown-6)methoxy)hexyl)fluorene] chelating to potassium ion (PFCn6:K(+)) as electron injection layer and air-stable high work function (EΦ) metal aluminum as the cathode, the performance of fluorescent white polymer light-emitting diode (WPLED) achieves the high maximum brightness (Bmax) of 61 523 cd/m(2) and maximum luminance efficiency (ηL, max) of 10.3 cd/A. Replacing PFCn6:K(+)/Al cathode by CsF/Al, the Bmax and ηL, max are promoted to 87 615 cd/m(2) (the record value in WPLED) and 11.1 cd/A, respectively.

  5. Intragranular cracking as a critical barrier for high-voltage usage of layer-structured cathode for lithium-ion batteries

    DOE PAGES

    Yan, Pengfei; Zheng, Jianming; Gu, Meng; ...

    2017-01-16

    LiNi1/3Mn1/3Co1/3O2 (NMC333) layered cathode is often fabricated as secondary particles of consisting of densely packed primary particles, which offers advantage of high energy density and alleviation of cathode side reactions/corrosions, but introduces other drawbacks, such as intergranular cracking. Here, we report unexpected observations on the nucleation and growth of intragranular cracks in the commercial NMC333 layered cathode by using advanced S/TEM. We found that the formation of the intragranular cracks is directly associated with high voltage cycling, which is an electrochemically driven and diffusion controlled process. The intragranular cracks were noticed to be characteristically initiated from grain interior, a consequencemore » of dislocation based crack incubation mechanism. This observation is in sharp contrast with the general theoretical models, predicting the initiation of intragranular cracks from grain boundaries or particle surface. As a result, our study indicates that maintain a structural stability is the key step toward high voltage operation of layered cathode materials.« less

  6. GaN barrier layer dependence of critical thickness in GaInN/GaN superlattice on GaN characterized by in situ X-ray diffraction

    NASA Astrophysics Data System (ADS)

    Osumi, Junya; Ishihara, Koji; Yamamoto, Taiji; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu

    2016-05-01

    We investigated the critical thickness dependence on the GaN barrier layer thickness in a GaInN/GaN superlattice (SL). The characterization was done by combining an in situ X-ray diffraction (XRD) system attached to a metalorganic vapor phase epitaxy rector and ex situ analyses such as scanning electron microscopy and transmission electron microscopy. The critical thickness required for the introduction of a + c-type misfit dislocations (MDs) in the GaInN/GaN SL was determined by analyzing the full width at half maximum of the in situ XRD spectrum from a GaInN/GaN SL as a function of SL periods, and we successfully found the critical thicknesses of specific different SLs.

  7. Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Fu, Yi-Keng; Lu, Yu-Hsuan; Jiang, Ren-Hao; Chen, Bo-Chun; Fang, Yen-Hsiang; Xuan, Rong; Su, Yan-Kuin; Lin, Chia-Feng; Chen, Jebb-Fang

    2011-08-01

    Near ultraviolet light-emitting diodes (LEDs) with quaternary AlInGaN quantum barriers (QBs) are grown by atmospheric pressure metalorganic vapor phase epitaxy. The indium mole fraction of AlInGaN QB could be enhanced as we increased the TMG flow rate. Both the wavelength shift in EL spectra and forward voltage at 20 mA current injection were reduced by using AlInGaN QB. Under 100 mA current injection, the LED output power with Al 0.089In 0.035Ga 0.876N QB can be enhanced by 15.9%, compared to LED with GaN QB. It should be attributed to a reduction of lattice mismatch induced polarization mismatch in the active layer.

  8. Control of an interfacial MoSe2 layer in Cu2ZnSnSe4 thin film solar cells: 8.9% power conversion efficiency with a TiN diffusion barrier

    NASA Astrophysics Data System (ADS)

    Shin, Byungha; Zhu, Yu; Bojarczuk, Nestor A.; Jay Chey, S.; Guha, Supratik

    2012-07-01

    We have examined Cu2ZnSnSe4 (CZTSe) solar cells prepared by thermal co-evaporation on Mo-coated glass substrates followed by post-deposition annealing under Se ambient. We show that the control of an interfacial MoSe2 layer thickness and the introduction of an adequate Se partial pressure (PSe) during annealing are essential to achieve high efficiency CZTSe solar cells—a reverse correlation between device performance and MoSe2 thickness is observed, and insufficient PSe leads to the formation of defects within the bandgap as revealed by photoluminescence measurements. Using a TiN diffusion barrier, we demonstrate 8.9% efficiency CZTSe devices with a long lifetime of photo-generated carriers.

  9. Highly reliable Ti-based ohmic contact to N-polar n-type GaN for vertical-geometry light-emitting diodes by using a Ta barrier layer.

    PubMed

    Park, Jae-Seong; Han, Jaecheon; Seong, Tae-Yeon

    2014-05-05

    The formation of thermally stable and low resistance Ti/Al-based ohmic contacts to N-polar n-GaN for high-power vertical light-emitting diodes (VLEDs) using a Ta diffusion barrier is presented. Before annealing, both Ti/Al/Au and Ti/Ta/Al/Au contacts reveal ohmic behavior with specific contact resistances of 2.4 × 10⁻⁴ and 1.2 × 10⁻⁴ Ωcm², respectively. However, unlike the Ti/Al/Au samples that are electrically degraded with increasing annealing time at 250 °C, the Ti/Ta/Al/Au samples remain thermally stable even after annealing for 600 min. LEDs fabricated with the Ti/Ta/Al/Au contacts yield 8.3% higher output power (at 300 mA) than LEDs with the Ti/Al/Au contact. X-ray photoemission spectroscopy results show that the Ta layer serves as an efficient barrier to the indiffusion of oxygen toward the GaN. On the basis of the XPS and electrical results, the annealing dependence of the electrical characteristics of Ti/Al-based contacts are described and discussed.

  10. Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al{sub 2}O{sub 3} atomic layer deposition overgrowth

    SciTech Connect

    Gregušová, D. Jurkovič, M.; Haščík, Š.; Blaho, M.; Seifertová, A.; Fedor, J.; Ťapajna, M.; Fröhlich, K.; Kuzmik, J.; Vogrinčič, P.; Liday, J.; Derluyn, J.; Germain, M.

    2014-01-06

    We discuss possibilities of adjustment of a threshold voltage V{sub T} in normally off GaN high-electron mobility transistors (HEMTs) without compromising a maximal drain current I{sub DSmax}. Techniques of a low power plasma or thermal oxidation of 2-nm thick AlN cap over 3-nm thick AlGaN barrier are developed and calibrated for a thorough oxidation of the cap with a minimal density of surface donors at the inherent oxide-semiconductor interface. It has been shown that while a thermal oxidation technique leads to the channel and/or interface degradation, low density of surface donors and scalability of V{sub T} with additionally overgrown Al{sub 2}O{sub 3} may be obtained for plasma oxidized HEMTs. With 10-nm thick Al{sub 2}O{sub 3} deposited at 100 °C by atomic-layer deposition, we obtained V{sub T} of 1.6 V and I{sub DSmax} of 0.48 A/mm at a gate voltage of V{sub GS} = 8 V. Density of surface donors was estimated to be about 1.2 × 10{sup 13} cm{sup −2}, leaving most of the negative polarization charge at the semiconductor surface uncompensated. Further reduction of surface donors may be needed for even higher V{sub T}.

  11. Sub-milliwatt AlGaN nanowire tunnel junction deep ultraviolet light emitting diodes on silicon operating at 242 nm

    NASA Astrophysics Data System (ADS)

    Zhao, S.; Sadaf, S. M.; Vanka, S.; Wang, Y.; Rashid, R.; Mi, Z.

    2016-11-01

    We report AlGaN nanowire light emitting diodes (LEDs) operating in the ultraviolet-C band. The LED structures are grown by molecular beam epitaxy on Si substrate. It is found that with the use of the n+-GaN/Al/p+-AlGaN tunnel junction (TJ), the device resistance is reduced by one order of magnitude, and the light output power is increased by two orders of magnitude, compared to AlGaN nanowire LEDs without TJ. For unpackaged TJ ultraviolet LEDs emitting at 242 nm, a maximum output power of 0.37 mW is measured, with a peak external quantum efficiency up to 0.012%.

  12. Optical polarization control of photo-pumped stimulated emissions at 238 nm from AlGaN multiple-quantum-well laser structures on AlN substrates

    NASA Astrophysics Data System (ADS)

    Lachab, Mohamed; Sun, WenHong; Jain, Rakesh; Dobrinsky, Alex; Gaevski, Mikhail; Rumyantsev, Sergey; Shur, Michael; Shatalov, Max

    2017-01-01

    We demonstrate the capability to control the optical polarization of room-temperature stimulated emissions (SEs) at 238-239 nm from optically pumped AlGaN multiple-quantum-well (MQW) heterostructures on bulk AlN. The results of structural and optical characterizations provided evidence that altering the strain state in the pseudomorphically grown MQW laser structures enabled the switching of the polarization direction of the SE from predominantly transverse electric (TE) at 238 nm to predominantly transverse magnetic (TM) at 239 nm. The SE observed at 238 nm represents the shortest peak wavelength with TE polarization yet reported for AlGaN materials grown on any type of substrate.

  13. Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Fryauf, David M.; Phillips, Andrew C.; Kobayashi, Nobuhiko P.

    2013-09-01

    An urgent demand remains in astronomy for high-reflectivity silver mirrors that can withstand years of exposure in observatory environments. The University of California Observatories Astronomical Coatings Lab has undertaken development of protected silver coatings suitable for telescope mirrors that maintain high reflectivity at wavelengths from 340 nm through the mid-infrared spectrum. We present initial results of an investigation into whether plasma-enhanced atomic layer deposition (PEALD) can produce superior protective layers of transparent dielectrics. Several novel coating recipes have been developed with ion-assisted electron beam deposition (IAEBD) of materials including yttrium fluoride, and oxides of yttrium, hafnium, and titanium. Samples of these mirror coatings were covered with conformal layers of aluminum oxide (AlOx) deposited by PEALD using trimethylaluminum as a metal precursor and oxygen as an oxidant gas activated by remote plasma. Samples of coating recipes with and without PEALD oxide undergo aggressive environmental testing, including high temperature/high humidity (HTHH), in which samples were exposed to an environment of 80% humidity at 80°C for ten days in a simple test set-up. HTHH testing show visible results suggesting that the PEALD oxide offers enhanced robust protection against chemical corrosion and moisture from an accelerated aging environment. Mirror samples are further characterized by reflectivity/absorption and atomic force microscopy before and after deposition of oxide coatings. AlOx is suitable for many applications and has been the initial material choice for this study, although we also tried TiOx and HfOx. Further experimentation based on these initial results is on-going.

  14. Micro heat barrier

    DOEpatents

    Marshall, Albert C.; Kravitz, Stanley H.; Tigges, Chris P.; Vawter, Gregory A.

    2003-08-12

    A highly effective, micron-scale micro heat barrier structure and process for manufacturing a micro heat barrier based on semiconductor and/or MEMS fabrication techniques. The micro heat barrier has an array of non-metallic, freestanding microsupports with a height less than 100 microns, attached to a substrate. An infrared reflective membrane (e.g., 1 micron gold) can be supported by the array of microsupports to provide radiation shielding. The micro heat barrier can be evacuated to eliminate gas phase heat conduction and convection. Semi-isotropic, reactive ion plasma etching can be used to create a microspike having a cusp-like shape with a sharp, pointed tip (<0.1 micron), to minimize the tip's contact area. A heat source can be placed directly on the microspikes. The micro heat barrier can have an apparent thermal conductivity in the range of 10.sup.-6 to 10.sup.-7 W/m-K. Multiple layers of reflective membranes can be used to increase thermal resistance.

  15. Intragranular cracking as a critical barrier for high-voltage usage of layer-structured cathode for lithium-ion batteries

    NASA Astrophysics Data System (ADS)

    Yan, Pengfei; Zheng, Jianming; Gu, Meng; Xiao, Jie; Zhang, Ji-Guang; Wang, Chong-Min

    2017-01-01

    LiNi1/3Mn1/3Co1/3O2-layered cathode is often fabricated in the form of secondary particles, consisting of densely packed primary particles. This offers advantages for high energy density and alleviation of cathode side reactions/corrosions, but introduces drawbacks such as intergranular cracking. Here, we report unexpected observations on the nucleation and growth of intragranular cracks in a commercial LiNi1/3Mn1/3Co1/3O2 cathode by using advanced scanning transmission electron microscopy. We find the formation of the intragranular cracks is directly associated with high-voltage cycling, an electrochemically driven and diffusion-controlled process. The intragranular cracks are noticed to be characteristically initiated from the grain interior, a consequence of a dislocation-based crack incubation mechanism. This observation is in sharp contrast with general theoretical models, predicting the initiation of intragranular cracks from grain boundaries or particle surfaces. Our study emphasizes that maintaining structural stability is the key step towards high-voltage operation of layered-cathode materials.

  16. Intragranular cracking as a critical barrier for high-voltage usage of layer-structured cathode for lithium-ion batteries

    PubMed Central

    Yan, Pengfei; Zheng, Jianming; Gu, Meng; Xiao, Jie; Zhang, Ji-Guang; Wang, Chong-Min

    2017-01-01

    LiNi1/3Mn1/3Co1/3O2-layered cathode is often fabricated in the form of secondary particles, consisting of densely packed primary particles. This offers advantages for high energy density and alleviation of cathode side reactions/corrosions, but introduces drawbacks such as intergranular cracking. Here, we report unexpected observations on the nucleation and growth of intragranular cracks in a commercial LiNi1/3Mn1/3Co1/3O2 cathode by using advanced scanning transmission electron microscopy. We find the formation of the intragranular cracks is directly associated with high-voltage cycling, an electrochemically driven and diffusion-controlled process. The intragranular cracks are noticed to be characteristically initiated from the grain interior, a consequence of a dislocation-based crack incubation mechanism. This observation is in sharp contrast with general theoretical models, predicting the initiation of intragranular cracks from grain boundaries or particle surfaces. Our study emphasizes that maintaining structural stability is the key step towards high-voltage operation of layered-cathode materials. PMID:28091602

  17. Polariton Bose–Einstein condensate at room temperature in an Al(Ga)N nanowire–dielectric microcavity with a spatial potential trap

    PubMed Central

    Das, Ayan; Bhattacharya, Pallab; Heo, Junseok; Banerjee, Animesh; Guo, Wei

    2013-01-01

    A spatial potential trap is formed in a 6.0-μm Al(Ga)N nanowire by varying the Al composition along its length during epitaxial growth. The polariton emission characteristics of a dielectric microcavity with the single nanowire embedded in-plane have been studied at room temperature. Excitation is provided at the Al(Ga)N end of the nanowire, and polariton emission is observed from the lowest bandgap GaN region within the potential trap. Comparison of the results with those measured in an identical microcavity with a uniform GaN nanowire and having an identical exciton–photon detuning suggests evaporative cooling of the polaritons as they are transported into the trap in the Al(Ga)N nanowire. Measurement of the spectral characteristics of the polariton emission, their momentum distribution, first-order spatial coherence, and time-resolved measurements of polariton cooling provides strong evidence of the formation of a near-equilibrium Bose–Einstein condensate in the GaN region of the nanowire at room temperature. In contrast, the condensate formed in the uniform GaN nanowire–dielectric microcavity without the spatial potential trap is only in self-equilibrium. PMID:23382183

  18. An AlGaN Core-Shell Tunnel Junction Nanowire Light-Emitting Diode Operating in the Ultraviolet-C Band.

    PubMed

    Sadaf, S M; Zhao, S; Wu, Y; Ra, Y-H; Liu, X; Vanka, S; Mi, Z

    2017-02-08

    To date, semiconductor light emitting diodes (LEDs) operating in the deep ultraviolet (UV) spectral range exhibit very low efficiency due to the presence of large densities of defects and extremely inefficient p-type conduction of conventional AlGaN quantum well heterostructures. We have demonstrated that such critical issues can be potentially addressed by using nearly defect-free AlGaN tunnel junction core-shell nanowire heterostructures. The core-shell nanowire arrays exhibit high photoluminescence efficiency (∼80%) in the UV-C band at room temperature. With the incorporation of an epitaxial Al tunnel junction, the p-(Al)GaN contact-free nanowire deep UV LEDs showed nearly one order of magnitude reduction in the device resistance, compared to the conventional nanowire p-i-n device. The unpackaged Al tunnel junction deep UV LEDs exhibit an output power >8 mW and a peak external quantum efficiency ∼0.4%, which are nearly one to two orders of magnitude higher than previously reported AlGaN nanowire devices. Detailed studies further suggest that the maximum achievable efficiency is limited by electron overflow and poor light extraction efficiency due to the TM polarized emission.

  19. Environmental barrier material for organic light emitting device and method of making

    DOEpatents

    Graff, Gordon L [West Richland, WA; Gross, Mark E [Pasco, WA; Affinito, John D [Kennewick, WA; Shi, Ming-Kun [Richland, WA; Hall, Michael [West Richland, WA; Mast, Eric [Richland, WA

    2003-02-18

    An encapsulated organic light emitting device. The device includes a first barrier stack comprising at least one first barrier layer and at least one first polymer layer. There is an organic light emitting layer stack adjacent to the first barrier stack. A second barrier stack is adjacent to the organic light emitting layer stack. The second barrier stack has at least one second barrier layer and at least one second polymer layer. A method of making the encapsulated organic light emitting device is also provided.

  20. Deep ultraviolet photodetectors based on p-Si/ i-SiC/ n-Ga2O3 heterojunction by inserting thin SiC barrier layer

    NASA Astrophysics Data System (ADS)

    An, Yuehua; Zhi, Yusong; Wu, Zhenping; Cui, Wei; Zhao, Xiaolong; Guo, Daoyou; Li, Peigang; Tang, Weihua

    2016-12-01

    Deep ultraviolet photodetectors based on p-Si/ n-Ga2O3 and p-Si/ i-SiC/ n-Ga2O3 heterojunctions were fabricated by laser molecular beam epitaxial (L-MBE), respectively. In compare with p-Si/ n-Ga2O3 heterostructure-based photodetector, the dark current of p-Si/ i-SiC/ n-Ga2O3-based photodetector decreased by three orders of magnitude, and the rectifying behavior was tuned from reverse to forward. In order to improve the quality of the photodetector, we reduced the oxygen vacancies of p-Si/ i-SiC/ n-Ga2O3 heterostructures by changing the oxygen pressure during annealing. As a result, the rectification ratio ( I F/ I R) of the fabricated photodetectors was 36 at 4.5 V and the photosensitivity was 5.4 × 105% under the 254 nm light illumination at -4.5 V. The energy band structure of p-Si/ n-Ga2O3 and p-Si/ i-SiC/ n-Ga2O3 heterostructures was schematic drawn to explain the physic mechanism of enhancement of the performance of p-Si/ i-SiC/ n-Ga2O3 heterostructure-based deep UV photodetector by introduction of SiC layer.

  1. Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice.

    PubMed

    Wang, Xiao; Wang, Wei; Wang, Jingli; Wu, Hao; Liu, Chang

    2017-03-14

    P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)5/(GaN)1 superlattice (SL) in Al0.83Ga0.17N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as MgGa δ doped AlGaN SLs. Mg acceptor activation energy was significantly reduced from 0.378 to 0.331 eV by using MgGa δ doping in SLs instead of traditional doping in alloys. This new process was confirmed to be able to realize high p-type doping in high Al-content AlGaN.

  2. Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice

    NASA Astrophysics Data System (ADS)

    Wang, Xiao; Wang, Wei; Wang, Jingli; Wu, Hao; Liu, Chang

    2017-03-01

    P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)5/(GaN)1 superlattice (SL) in Al0.83Ga0.17N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as MgGa δ doped AlGaN SLs. Mg acceptor activation energy was significantly reduced from 0.378 to 0.331 eV by using MgGa δ doping in SLs instead of traditional doping in alloys. This new process was confirmed to be able to realize high p-type doping in high Al-content AlGaN.

  3. An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission

    PubMed Central

    Lee, Jong Won; Kim, Dong Yeong; Park, Jun Hyuk; Schubert, E. Fred; Kim, Jungsub; Lee, Jinsub; Kim, Yong-Il; Park, Youngsoo; Kim, Jong Kyu

    2016-01-01

    While there is an urgent need for semiconductor-based efficient deep ultraviolet (DUV) sources, the efficiency of AlGaN DUV light-emitting diodes (LEDs) remains very low because the extraction of DUV photons is significantly limited by intrinsic material properties of AlGaN. Here, we present an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes for maximizing the power conversion efficiency. PMID:26935402

  4. Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice

    PubMed Central

    Wang, Xiao; Wang, Wei; Wang, Jingli; Wu, Hao; Liu, Chang

    2017-01-01

    P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)5/(GaN)1 superlattice (SL) in Al0.83Ga0.17N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as MgGa δ doped AlGaN SLs. Mg acceptor activation energy was significantly reduced from 0.378 to 0.331 eV by using MgGa δ doping in SLs instead of traditional doping in alloys. This new process was confirmed to be able to realize high p-type doping in high Al-content AlGaN. PMID:28290480

  5. An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission.

    PubMed

    Lee, Jong Won; Kim, Dong Yeong; Park, Jun Hyuk; Schubert, E Fred; Kim, Jungsub; Lee, Jinsub; Kim, Yong-Il; Park, Youngsoo; Kim, Jong Kyu

    2016-03-03

    While there is an urgent need for semiconductor-based efficient deep ultraviolet (DUV) sources, the efficiency of AlGaN DUV light-emitting diodes (LEDs) remains very low because the extraction of DUV photons is significantly limited by intrinsic material properties of AlGaN. Here, we present an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes for maximizing the power conversion efficiency.

  6. Cuprous selenide and sulfide form improved photovoltaic barriers

    NASA Technical Reports Server (NTRS)

    1966-01-01

    Photovoltaic barriers formed by depositing a layer of polycrystalline cuprous sulfide or cuprous selenide on gallium arsenide are chemically and electrically stable. The stability of these barrier materials is significantly greater than that of cuprous iodide.

  7. Barrier infrared detector

    NASA Technical Reports Server (NTRS)

    Ting, David Z. (Inventor); Khoshakhlagh, Arezou (Inventor); Soibel, Alexander (Inventor); Hill, Cory J. (Inventor); Gunapala, Sarath D. (Inventor)

    2012-01-01

    A superlattice-based infrared absorber and the matching electron-blocking and hole-blocking unipolar barriers, absorbers and barriers with graded band gaps, high-performance infrared detectors, and methods of manufacturing such devices are provided herein. The infrared absorber material is made from a superlattice (periodic structure) where each period consists of two or more layers of InAs, InSb, InSbAs, or InGaAs. The layer widths and alloy compositions are chosen to yield the desired energy band gap, absorption strength, and strain balance for the particular application. Furthermore, the periodicity of the superlattice can be "chirped" (varied) to create a material with a graded or varying energy band gap. The superlattice based barrier infrared detectors described and demonstrated herein have spectral ranges covering the entire 3-5 micron atmospheric transmission window, excellent dark current characteristics operating at least 150K, high yield, and have the potential for high-operability, high-uniformity focal plane arrays.

  8. Language barriers

    PubMed Central

    Ngwakongnwi, Emmanuel; Hemmelgarn, Brenda R.; Musto, Richard; King-Shier, Kathryn M.; Quan, Hude

    2012-01-01

    Abstract Objective To assess use of regular medical doctors (RMDs), as well as awareness and use of telephone health lines or telehealth services, by official language minorities (OLMs) in Canada. Design Analysis of data from the 2006 postcensal survey on the vitality of OLMs. Setting Canada. Participants In total, 7691 English speakers in Quebec and 12 376 French speakers outside Quebec, grouped into those who experienced language barriers and those with no language barriers. Main outcome measures Health services utilization (HSU) by the presence of language barriers; HSU measures included having an RMD, use of an RMD’s services, and awareness of and use of telephone health lines or telehealth services. Multivariable models examined the associations between HSU and language barriers. Results After adjusting for age and sex, English speakers residing in Quebec with limited proficiency in French were less likely to have RMDs (adjusted odds ratio [AOR] 0.66, 95% CI 0.50 to 0.87) and to use the services of their RMDs (AOR 0.65, 95% CI 0.50 to 0.86), but were more likely to be aware of the existence of (AOR 1.50, 95% CI 1.16 to 1.93) and to use (AOR 1.43, 95% CI 0.97 to 2.11) telephone health lines or telehealth services. This pattern of having and using RMDs and telehealth services was not observed for French speakers residing outside of Quebec. Conclusion Overall we found variation in HSU among the language barrier populations, with lower use observed in Quebec. Age older than 45 years, male sex, being married or in common-law relationships, and higher income were associated with having RMDs for OLMs. PMID:23242902

  9. Complementary Barrier Infrared Detector (CBIRD) Contact Methods

    NASA Technical Reports Server (NTRS)

    Ting, David Z.; Hill, Cory J.; Gunapala, Sarath D.

    2013-01-01

    The performance of the CBIRD detector is enhanced by using new device contacting methods that have been developed. The detector structure features a narrow gap adsorber sandwiched between a pair of complementary, unipolar barriers that are, in turn, surrounded by contact layers. In this innovation, the contact adjacent to the hole barrier is doped n-type, while the contact adjacent to the electron barrier is doped p-type. The contact layers can have wider bandgaps than the adsorber layer, so long as good electrical contacts are made to them. If good electrical contacts are made to either (or both) of the barriers, then one could contact the barrier(s) directly, obviating the need for additional contact layers. Both the left and right contacts can be doped either n-type or ptype. Having an n-type contact layer next to the electron barrier creates a second p-n junction (the first being the one between the hole barrier and the adsorber) over which applied bias could drop. This reduces the voltage drop over the adsorber, thereby reducing dark current generation in the adsorber region.

  10. Amosphous diffusion barriers

    NASA Technical Reports Server (NTRS)

    Kolawa, E.; So, F. C. T.; Nicolet, M-A.

    1986-01-01

    Amorphous W-Zr and W-N alloys were investigated as diffusion barriers in silicon metallization schemes. Data were presented showing that amorphous W-Zr crystallizes at 900 C, which is 200 C higher than amorphous W-Ni films, and that both films react with metallic overlayers at temperatures far below the crystllization temperature. Also, W-N alloys (crystalline temperature of 600 C) were successfully incorporated as a diffusion barrier in contact structures with both Al and Ag overlayers. The thermal stability of the electrical characteristics of shallow n(+)p junctions significantly improved by incorporating W-N layers in the contact system. One important fact demonstated was the critical influence of the deposition parameters during formation of these carriers.

  11. Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature.

    PubMed

    Li, K H; Liu, X; Wang, Q; Zhao, S; Mi, Z

    2015-02-01

    Ultraviolet laser radiation has been adopted in a wide range of applications as diverse as water purification, flexible displays, data storage, sterilization, diagnosis and bioagent detection. Success in developing semiconductor-based, compact ultraviolet laser sources, however, has been extremely limited. Here, we report that defect-free disordered AlGaN core-shell nanowire arrays, formed directly on a Si substrate, can be used to achieve highly stable, electrically pumped lasers across the entire ultraviolet AII (UV-AII) band (∼320-340 nm) at low temperatures. The laser threshold is in the range of tens of amps per centimetre squared, which is nearly three orders of magnitude lower than those of previously reported quantum-well lasers. This work also reports the first demonstration of electrically injected AlGaN-based ultraviolet lasers monolithically grown on a Si substrate, and offers a new avenue for achieving semiconductor lasers in the ultraviolet B (UV-B) (280-320 nm) and ultraviolet C (UV-C) (<280 nm) bands.

  12. AlGaN Nanostructures with Extremely High Room-Temperature Internal Quantum Efficiency of Emission Below 300 nm

    NASA Astrophysics Data System (ADS)

    Toropov, A. A.; Shevchenko, E. A.; Shubina, T. V.; Jmerik, V. N.; Nechaev, D. V.; Evropeytsev, E. A.; Kaibyshev, V. Kh.; Pozina, G.; Rouvimov, S.; Ivanov, S. V.

    2016-11-01

    We present theoretical optimization of the design of a quantum well (QW) heterostructure based on AlGaN alloys, aimed at achievement of the maximum possible internal quantum efficiency of emission in the mid-ultraviolet spectral range below 300 nm at room temperature. A sample with optimized parameters was fabricated by plasma-assisted molecular beam epitaxy using the submonolayer digital alloying technique for QW formation. High-angle annular dark-field scanning transmission electron microscopy confirmed strong compositional disordering of the thus-fabricated QW, which presumably facilitates lateral localization of charge carriers in the QW plane. Stress evolution in the heterostructure was monitored in real time during growth using a multibeam optical stress sensor intended for measurements of substrate curvature. Time-resolved photoluminescence spectroscopy confirmed that radiative recombination in the fabricated sample dominated in the whole temperature range up to 300 K. This leads to record weak temperature-induced quenching of the QW emission intensity, which at 300 K does not exceed 20% of the low-temperature value.

  13. An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: preferential outcoupling of strong in-plane emission (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Kim, Jong Kyu; Lee, Jong Won; Kim, Dong-Yeong; Park, Jun Hyuk; Schubert, E. Fred; Kim, Jungsub; Kim, Yong-Il

    2016-09-01

    AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) are being developed for their numerous applications such as purification of air and water, sterilization in food processing, UV curing, medical-, and defense-related light sources. However, external quantum efficiency (EQE) of AlGaN-based DUV LEDs is very poor (<5% for 250nm) particularly due to low hole concentration and light extraction efficiency (LEE). Conventional LEE-enhancing techniques used for GaInN-based visible LEDs turned out to be ineffective for DUV LEDs due to difference in intrinsic material property between GaInN and AlGaN (Al< 30%). Unlike GaInN visible LEDs, DUV light from a high Al-content AlGaN active region is strongly transverse-magnetic (TM) polarized, that is, the electric field vector is parallel to the (0001) c-axis and shows strong sidewall emission through m- or a-plane due to crystal-field split-off hole band being top most valence band. Therefore, a new LEE-enhancing approach addressing the unique intrinsic property of AlGaN DUV LEDs is strongly desired. In this study, an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells is presented. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage simultaneously. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes to maximize the power conversion efficiency.

  14. Hanford Protective Barriers Program asphalt barrier studies -- FY 1988

    SciTech Connect

    Freeman, H.D.; Gee, G.W.

    1989-05-01

    The Hanford Protective Barrier (HPB) Program is evaluating alternative barriers to provide a means of meeting stringent water infiltration requirements. One type of alternative barrier being considered is an asphalt-based layer, 1.3 to 15 cm thick, which has been shown to be very effective as a barrier for radon gas and, hence, should be equally effective as a barrier for the larger molecules of water. Fiscal Year 1988 studies focused on the selection and formulation of the most promising asphalt materials for further testing in small-tube lysimeters. Results of laboratory-scale formulation and hydraulic conductivity tests led to the selection of a rubberized asphalt material and an admixture of 24 wt% asphalt emulsion and concrete sand as the two barriers for lysimeter testing. Eight lysimeters, four each containing the two asphalt treatments, were installed in the Small Tube Lysimeter Facility on the Hanford Site. The lysimeter tests allow the performance of these barrier formulations to be evaluated under more natural environmental conditions.

  15. Plastic Schottky barrier solar cells

    DOEpatents

    Waldrop, James R.; Cohen, Marshall J.

    1984-01-24

    A photovoltaic cell structure is fabricated from an active medium including an undoped, intrinsically p-type organic semiconductor comprising polyacetylene. When a film of such material is in rectifying contact with a magnesium electrode, a Schottky-barrier junction is obtained within the body of the cell structure. Also, a gold overlayer passivates the magnesium layer on the undoped polyacetylene film.

  16. Thermal barrier coating for alloy systems

    DOEpatents

    Seals, Roland D.; White, Rickey L.; Dinwiddie, Ralph B.

    2000-01-01

    An alloy substrate is protected by a thermal barrier coating formed from a layer of metallic bond coat and a top coat formed from generally hollow ceramic particles dispersed in a matrix bonded to the bond coat.

  17. Fracture mechanism of a thermal barrier coating

    NASA Astrophysics Data System (ADS)

    Samoilenko, V. M.; Ravilov, R. G.; Drevnyak, V. V.; Petrova, M. A.

    2016-06-01

    The fracture mechanism of the thermal barrier coating of gas turbine blades is studied. The causes of the fracture of the ceramic layer are discussed and the possible ways to increase the fatigue life of the thermal barrier coating are considered.

  18. Thermal barrier coatings

    SciTech Connect

    Alvin, Mary Anne

    2010-06-22

    This disclosure addresses the issue of providing a metallic-ceramic overlay coating that potentially serves as an interface or bond coat layer to provide enhanced oxidation resistance to the underlying superalloy substrate via the formation of a diffusion barrier regime within the supporting base material. Furthermore, the metallic-ceramic coating is expected to limit the growth of a continuous thermally grown oxide (TGO) layer that has been primarily considered to be the principal cause for failure of existing TBC systems. Compositional compatibility of the metallic-ceramic with traditional yttria-stabilized zirconia (YSZ) top coats is provided to further limit debond or spallation of the coating during operational use. A metallic-ceramic architecture is disclosed wherein enhanced oxidation resistance is imparted to the surface of nickel-based superalloy or single crystal metal substrate, with simultaneous integration of the yttria stabilized zirconia (YSZ) within the metallic-ceramic overlayer.

  19. SF6/O2 plasma effects on silicon nitride passivation of AlGaN /GaN high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Meyer, David J.; Flemish, Joseph R.; Redwing, Joan M.

    2006-11-01

    The effects of various plasma and wet chemical surface pretreatments on the electrical characteristics of AlGaN /GaN high electron mobility transistors (HEMTs) passivated with plasma-deposited silicon nitride were investigated. The results of pulsed IV measurements show that samples exposed to various SF6/O2 plasma treatments have markedly better rf dispersion characteristics compared to samples that were either untreated or treated in wet buffered oxide etch prior to encapsulation. The improvement in these characteristics correlates with the reduction of carbon on the semiconductor surface as measured with x-ray photoelectron spectroscopy. HEMT channel sheet resistance was also affected by varying silicon nitride deposition parameters.

  20. Experimental observation of isotropic in-plane spin splitting in GaN /AlGaN two-dimensional electron gas

    NASA Astrophysics Data System (ADS)

    Zhao, Hongming; Liu, Baoli; Guo, Liwei; Tan, Changling; Chen, Hong; Chen, Dongmin

    2007-12-01

    The circular photogalvanic effect (CPGE) was used to study the in-plane-orientation dependent spin splitting in the C(0001)-oriented GaN /AlGaN two-dimensional electron gas (2DEG). The CPGE current induced by the interband transition shows an isotropic in-plane spin splitting in this system at room temperature. The spin relaxation time is found to be 14ps using the time resolved Kerr rotation technique, which is another evidence of the spin splitting in this 2DEG system.

  1. Arabian Sea Fronts and Barrier Layers

    DTIC Science & Technology

    2015-09-30

    relationship with the Indian Ocean monsoons and regional climate in general. OBJECTIVES The primary objective of this project is to...enable accurate prediction of the coupled ocean-atmosphere system that governs the climate of the Northern Indian Ocean. RELATED PROJECTS NASA

  2. UV photoemission study of heteroepitaxial AlGaN films grown on 6H-SiC

    NASA Astrophysics Data System (ADS)

    Benjamin, M. C.; Bremser, M. D.; Weeks, T. W.; King, S. W.; Davis, R. F.; Nemanich, R. J.

    1996-09-01

    This study presents results of UV photoemission measurements of the surface and interface properties of heteroepitaxial AlGaN on 6H-SiC. Previous results have demonstrated a negative electron affinity of AlN on 6H-SiC. In this study Al xGa 1- xN alloy films were grown by organometallic vapor phase epitaxy (OMVPE) and doped with silicon. The analytical techniques included UPS, Auger electron spectroscopy, and LEED. All analysis took place in an integrated UHV transfer system which included the analysis techniques, a surface processing chamber and a gas source MBE. The OMVPE alloy samples were transported in air to the surface characterization system while the AlN and GaN investigations were prepared in situ. The surface electronic states were characterized by surface normal UV photoemission to determine whether the electron affinity was positive or negative. Two aspects of the photoemission distinguish a surface that exhibits a NEA: (1) the spectrum exhibits a sharp peak in the low kinetic energy region, and (2) the width of the spectrum is hv - Eg. The in situ prepared AlN samples exhibited the characteristics of a NEA while the GaN and Al 0.13Ga 0.87N samples did not. The Al 0.55Ga 0.45N sample shows a low positive electron affinity. Annealing of the sample to > 400°C resulted in the disappearance of the sharp emission features, and this effect was related to contaminant effects on the surface. The results suggest the potential of nitride based cold cathode electron emitters.

  3. Fast spatial atomic layer deposition of Al{sub 2}O{sub 3} at low temperature (<100 °C) as a gas permeation barrier for flexible organic light-emitting diode displays

    SciTech Connect

    Choi, Hagyoung; Shin, Seokyoon; Jeon, Hyeongtag; Choi, Yeongtae; Kim, Junghun; Kim, Sanghun; Chung, Seog Chul; Oh, Kiyoung

    2016-01-15

    The authors developed a high throughput (70 Å/min) and scalable space-divided atomic layer deposition (ALD) system for thin film encapsulation (TFE) of flexible organic light-emitting diode (OLED) displays at low temperatures (<100 °C). In this paper, the authors report the excellent moisture barrier properties of Al{sub 2}O{sub 3} films deposited on 2G glass substrates of an industrially relevant size (370 × 470 mm{sup 2}) using the newly developed ALD system. This new ALD system reduced the ALD cycle time to less than 1 s. A growth rate of 0.9 Å/cycle was achieved using trimethylaluminum as an Al source and O{sub 3} as an O reactant. The morphological features and step coverage of the Al{sub 2}O{sub 3} films were investigated using field emission scanning electron microscopy. The chemical composition was analyzed using Auger electron spectroscopy. These deposited Al{sub 2}O{sub 3} films demonstrated a good optical transmittance higher than 95% in the visible region based on the ultraviolet visible spectrometer measurements. Water vapor transmission rate lower than the detection limit of the MOCON test (less than 3.0 × 10{sup −3} g/m{sup 2} day) were obtained for the flexible substrates. Based on these results, Al{sub 2}O{sub 3} deposited using our new high-throughput and scalable spatial ALD is considered a good candidate for preparation of TFE films of flexible OLEDs.

  4. In vitro porcine blood-brain barrier model for permeability studies: pCEL-X software pKa(FLUX) method for aqueous boundary layer correction and detailed data analysis.

    PubMed

    Yusof, Siti R; Avdeef, Alex; Abbott, N Joan

    2014-12-18

    In vitro blood-brain barrier (BBB) models from primary brain endothelial cells can closely resemble the in vivo BBB, offering valuable models to assay BBB functions and to screen potential central nervous system drugs. We have recently developed an in vitro BBB model using primary porcine brain endothelial cells. The model shows expression of tight junction proteins and high transendothelial electrical resistance, evidence for a restrictive paracellular pathway. Validation studies using small drug-like compounds demonstrated functional uptake and efflux transporters, showing the suitability of the model to assay drug permeability. However, one limitation of in vitro model permeability measurement is the presence of the aqueous boundary layer (ABL) resulting from inefficient stirring during the permeability assay. The ABL can be a rate-limiting step in permeation, particularly for lipophilic compounds, causing underestimation of the permeability. If the ABL effect is ignored, the permeability measured in vitro will not reflect the permeability in vivo. To address the issue, we explored the combination of in vitro permeability measurement using our porcine model with the pKa(FLUX) method in pCEL-X software to correct for the ABL effect and allow a detailed analysis of in vitro (transendothelial) permeability data, Papp. Published Papp using porcine models generated by our group and other groups are also analyzed. From the Papp, intrinsic transcellular permeability (P0) is derived by simultaneous refinement using a weighted nonlinear regression, taking into account permeability through the ABL, paracellular permeability and filter restrictions on permeation. The in vitro P0 derived for 22 compounds (35 measurements) showed good correlation with P0 derived from in situ brain perfusion data (r(2)=0.61). The analysis also gave evidence for carrier-mediated uptake of naloxone, propranolol and vinblastine. The combination of the in vitro porcine model and the software

  5. Lipids in blood-brain barrier models in vitro I: Thin-layer chromatography and high-performance liquid chromatography for the analysis of lipid classes and long-chain polyunsaturated fatty acids.

    PubMed

    Krämer, Stefanie D; Hurley, Johannah A; Abbott, N Joan; Begley, David J

    2002-01-01

    The objectives of this study were to optimize a sensitive high-performance liquid chromatography (HPLC) method for fatty acid (FA) analysis for the quantification of polyunsaturated FAs (PUFAs) in cell lipid extracts and to analyze the lipid and FA patterns of three cell lines used in blood-brain barrier (BBB) models: RBE4, ECV304, and C6. Thin-layer chromatographic analysis revealed differences in the phosphatidylcholine-phosphatidylethanolamine (PC:PE) ratios and the triglyceride (TG) content. The PC:PE ratio was <1 for RBE4 cells but >1 for ECV304 and C6 cells. ECV304 cells displayed up to 9% TG depending on culture time, whereas the other cell lines contained about 1% TG. The percentages of docosahexaenoic acid were 9.4 +/- 1.7% of the unsaturated FAs in RBE4 cells (n = 5; 4 d in culture; 9.9% after 10 d), 8.1 +/- 2.0% in ECV304 cells (n = 11; 10 to 14 d), and 6.7 +/- 0.6% in C6 cells (n = 6; 10 to 14 d) and were close to the published values for rat brain microvascular endothelium. The percentage of arachidonic acid (C20:4) was about half that in vivo. ECV304 cells contained the highest fraction of C20:4, 17.8 +/- 2.2%; RBE4 cells contained 11.6 +/- 2.4%; and C6 cells 15.8 +/- 1.9%. It is concluded that a sensitive HPLC method for FAs is now optimized for the analysis of long-chain PUFAs. The results provide a useful framework for studies on the effects of lipid modulation and give reference information for the development of further BBB models.

  6. Selectivity control of photosensitivity of Ag-GaP and Ag- AlGaN structures

    NASA Astrophysics Data System (ADS)

    Lamkin, I. A.; Tarasov, S. A.; Solomonov, A. V.; Andreev, M. Y.; Kurin, S. Yu

    2015-12-01

    Design, growth and studies of photosensitive structures based on Ag-GaP and Ag- AlxGa1-xN contacts are reported. Methods for structure selectivity control, which allow changing the sensitivity spectrum half-width in a range of 11-210 nm were worked out. By varying the metal layer thickness, a set of Ag-GaP short-wavelength photodetectors (PD) was fabricated. The set includes PDs from broadband (spectrum half-width Δλ=210 nm, sensitivity SI = 0,19 A/W) to visible-blind (Δλ=15 nm, SI = 0,034 A/W). The use of Ag-AlxGa1-xN structures provided increased sensitivity (SI = 0,071 A/W) and Δλ reduced to 11 nm due to special selection of solid solution composition.

  7. AlGaN HEMTs on patterned resistive/conductive SiC templates

    NASA Astrophysics Data System (ADS)

    Prystawko, Pawel; Sarzynski, Marcin; Nowakowska-Siwinska, Anna; Crippa, Danilo; Kruszewski, Piotr; Wojtasiak, Wojciech; Leszczynski, Mike

    2017-04-01

    High performance GaN-based high electron mobility transistors (HEMTs) on SiC require low-miscut ( 0.45°), resistive substrates, which are very expensive. A cost-effective solution is to use resistive SiC template i.e., grow a thick resistive SiC epitaxial layer on cheap, conductive SiC substrate. However, this approach requires much higher miscut (2-8°). In the present work we show a lateral patterning technology capable to locally decrease the high miscut of the resistive SiC template, down to a level acceptable for GaN epitaxy. On such patterned SiC templates we grew smooth AlGaN/GaN structures. The maximum width of flat regions available for device fabrication was nearly 100 μm. In these flat regions AlGaN-based HEMTs were fabricated and characterized.

  8. Impact of wet-oxidized Al2O3/AlGaN interface on AlGaN/GaN 2-DEGs

    NASA Astrophysics Data System (ADS)

    Meer, Mudassar; Majety, Sridhar; Takhar, Kuldeep; Ganguly, Swaroop; Saha, Dipankar

    2017-04-01

    We investigated the impact of wet-oxidation of AlGaN in an AlGaN/GaN heterostructure by selectively probing the metal/AlGaN interface. The two-dimensional electron gas (2-DEG) characteristics show improved mobility with increasing oxidation time and Al2O3 thickness. The change is attributed to an interplay of the interface trap density (D it) and the oxide thickness. D it is found to reduce progressively for thicker gate oxides as determined by selectively probing the Al2O3/AlGaN interface and employing frequency dependent capacitance and conductance spectroscopy on these devices. The energies of the interface traps are found to be in the range of 0.35–0.45 eV below the conduction band edge. The D it is found to reduce from 2 × 1013 cm‑2 eV‑1 for 2.3 nm of Al2O3 to 5 × 1012 cm‑2 eV‑1 for 16 nm of Al2O3. Contrary to the earlier reports of increased 2-DEG electron density, the primary advantage is found to be a reduction in Dit leading to an increased electron mobility from 1730 to 2800 cm2V‑1s‑1.

  9. Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates

    SciTech Connect

    Bryan, Zachary Bryan, Isaac; Sitar, Zlatko; Collazo, Ramón; Mita, Seiji; Tweedie, James

    2015-06-08

    Since the band ordering in AlGaN has a profound effect on the performance of UVC light emitting diodes (LEDs) and even determines the feasibility of surface emitting lasers, the polarization properties of emitted light from c-oriented AlGaN and AlGaN-based laser structures were studied over the whole composition range, as well as various strain states, quantum confinements, and carrier densities. A quantitative relationship between the theoretical valence band separation, determined using k•p theory, and the experimentally measured degree of polarization is presented. Next to composition, strain was found to have the largest influence on the degree of polarization while all other factors were practically insignificant. The lowest crossover point from the transverse electric to transverse magnetic polarized emission of 245 nm was found for structures pseudomorphically grown on AlN substrates. This finding has significant implications toward the efficiency and feasibility of surface emitting devices below this wavelength.

  10. Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate

    SciTech Connect

    Li, Xiao-Hang E-mail: dupuis@gatech.edu; Kao, Tsung-Ting; Satter, Md. Mahbub; Shen, Shyh-Chiang; Yoder, P. Douglas; Detchprohm, Theeradetch; Dupuis, Russell D. E-mail: dupuis@gatech.edu; Wei, Yong O.; Wang, Shuo; Xie, Hongen; Fischer, Alec M.; Ponce, Fernando A.

    2015-01-26

    We demonstrate transverse-magnetic (TM) dominant deep-ultraviolet (DUV) stimulated emission from photo-pumped AlGaN multiple-quantum-well lasers grown pseudomorphically on an AlN/sapphire template by means of photoluminescence at room temperature. The TM-dominant stimulated emission was observed at wavelengths of 239, 242, and 243 nm with low thresholds of 280, 250, and 290 kW/cm{sup 2}, respectively. In particular, the lasing wavelength of 239 nm is shorter compared to other reports for AlGaN lasers grown on foreign substrates including sapphire and SiC. The peak wavelength difference between the transverse-electric (TE)-polarized emission and TM-polarized emission was approximately zero for the lasers in this study, indicating the crossover of crystal-field split-off hole and heavy-hole valence bands. The rapid variation of polarization between TE- and TM-dominance versus the change in lasing wavelength from 243 to 249 nm can be attributed to a dramatic change in the TE-to-TM gain coefficient ratio for the sapphire-based DUV lasers in the vicinity of TE-TM switch.

  11. Microstructures of mixed group III-nitride epitaxial layers

    NASA Astrophysics Data System (ADS)

    Westmeyer, Andrew Nathan

    InGaN and AlGaN epitaxial layers were deposited by metalorganic chemical vapor deposition on sapphire substrates with GaN buffer layers. For the growth of InGaN at a given temperature, the trimethylgallium flow rate has the greatest influence on the In incorporation, whereas the trimethylindium flow rate has little influence. These effects are attributed to the suppression of In desorption by increasing the growth rate and the saturation of the surface with In adatoms, respectively. If the growth temperature is increased by 2.4°C, then the In content is lowered by 1% for the investigated temperature range of 785--845°C. For the growth of AlGaN, the solid fraction of Al has a sub-linear dependence on the gas composition. This was attributed to the composition pulling effect, in which incoming species are rejected in order to reduce the strain with the underlying buffer layer. A strain analysis was performed on all samples by X-ray diffraction in order to determine the composition and degree of relaxation. These values were compared to those obtained by Rutherford backscattering spectroscopy. By this method the varied reported values for elastic constants were evaluated to ascertain which set provided the best correlation. Transmission electron microscopy was performed. Plan-view images of InGaN contain domains differing in the direction of the modulations. Zone-axis diffraction patterns reveal sidebands adjacent to several Bragg reflections. These observations can be explained by diffraction effects resulting from periodic composition modulations, which are an intermediate stage in the process of phase separation. Since Young's modulus for the nitrides is isotropic in the (0001) plane, no particular direction is favored for the modulations based on strain energy considerations. In the case of AlGaN, periodic composition modulations are observed not in the growth plane (0001) but in the growth direction [0001]. Satellites in diffraction patterns are aligned in this

  12. Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

    PubMed Central

    Hu, Hongpo; Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Gui, Chengqun; Liu, Sheng

    2017-01-01

    We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs) and ex-situ sputtered AlN NL. The threading dislocation (TD) densities in GaN-based UV LEDs with GaN/AlGaN/sputtered AlN NLs were determined by high-resolution X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM), which revealed that the TD density in UV LED with AlGaN NL was the highest, whereas that in UV LED with sputtered AlN NL was the lowest. The light output power (LOP) of UV LED with AlGaN NL was 18.2% higher than that of UV LED with GaN NL owing to a decrease in the absorption of 375 nm UV light in the AlGaN NL with a larger bandgap. Using a sputtered AlN NL instead of the AlGaN NL, the LOP of UV LED was further enhanced by 11.3%, which is attributed to reduced TD density in InGaN/AlInGaN active region. In the sputtered AlN thickness range of 10–25 nm, the LOP of UV LED with 15-nm-thick sputtered AlN NL was the highest, revealing that optimum thickness of the sputtered AlN NL is around 15 nm. PMID:28294166

  13. Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Hu, Hongpo; Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Gui, Chengqun; Liu, Sheng

    2017-03-01

    We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs) and ex-situ sputtered AlN NL. The threading dislocation (TD) densities in GaN-based UV LEDs with GaN/AlGaN/sputtered AlN NLs were determined by high-resolution X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM), which revealed that the TD density in UV LED with AlGaN NL was the highest, whereas that in UV LED with sputtered AlN NL was the lowest. The light output power (LOP) of UV LED with AlGaN NL was 18.2% higher than that of UV LED with GaN NL owing to a decrease in the absorption of 375 nm UV light in the AlGaN NL with a larger bandgap. Using a sputtered AlN NL instead of the AlGaN NL, the LOP of UV LED was further enhanced by 11.3%, which is attributed to reduced TD density in InGaN/AlInGaN active region. In the sputtered AlN thickness range of 10–25 nm, the LOP of UV LED with 15-nm-thick sputtered AlN NL was the highest, revealing that optimum thickness of the sputtered AlN NL is around 15 nm.

  14. Simulation study of HEMT structures with HfO{sub 2} cap layer for mitigating inverse piezoelectric effect related device failures

    SciTech Connect

    Nagulapally, Deepthi; Joshi, Ravi P.; Pradhan, Aswini

    2015-01-15

    The Inverse Piezoelectric Effect (IPE) is thought to contribute to possible device failure of GaN High Electron Mobility Transistors (HEMTs). Here we focus on a simulation study to probe the possible mitigation of the IPE by reducing the internal electric fields and related elastic energy through the use of high-k materials. Inclusion of a HfO{sub 2} “cap layer” above the AlGaN barrier particularly with a partial mesa structure is shown to have potential advantages. Simulations reveal even greater reductions in the internal electric fields by using “field plates” in concert with high-k oxides.

  15. Construction of low permeability soil-bentonite barrier caps and liners for landfills

    SciTech Connect

    Webber, T.; Williams, M.

    1995-12-31

    A low permeability soil barrier layer is the usual regulatory requirement for both caps and liner systems on modern municipal, industrial, and hazardous waste landfills. This soil layer is either used as the sole barrier or as the soil component of a composite liner system. This paper presents construction experience for blending on site soils with sodium bentonite to produce a thick, low permeability soil barrier layer. The paper begins with a description of the components and construction of the barrier layer and discusses how soil-bentonite barrier layers meet or exceed the regulatory performance criteria for both State and Federal agencies.

  16. Outer brain barriers in rat and human development

    PubMed Central

    Brøchner, Christian B.; Holst, Camilla B.; Møllgård, Kjeld

    2015-01-01

    Complex barriers at the brain's surface, particularly in development, are poorly defined. In the adult, arachnoid blood-cerebrospinal fluid (CSF) barrier separates the fenestrated dural vessels from the CSF by means of a cell layer joined by tight junctions. Outer CSF-brain barrier provides diffusion restriction between brain and subarachnoid CSF through an initial radial glial end feet layer covered with a pial surface layer. To further characterize these interfaces we examined embryonic rat brains from E10 to P0 and forebrains from human embryos and fetuses (6–21st weeks post-conception) and adults using immunohistochemistry and confocal microscopy. Antibodies against claudin-11, BLBP, collagen 1, SSEA-4, MAP2, YKL-40, and its receptor IL-13Rα2 and EAAT1 were used to describe morphological characteristics and functional aspects of the outer brain barriers. Claudin-11 was a reliable marker of the arachnoid blood-CSF barrier. Collagen 1 delineated the subarachnoid space and stained pial surface layer. BLBP defined radial glial end feet layer and SSEA-4 and YKL-40 were present in both leptomeningeal cells and end feet layer, which transformed into glial limitans. IL-13Rα2 and EAAT1 were present in the end feet layer illustrating transporter/receptor presence in the outer CSF-brain barrier. MAP2 immunostaining in adult brain outlined the lower border of glia limitans; remnants of end feet were YKL-40 positive in some areas. We propose that outer brain barriers are composed of at least 3 interfaces: blood-CSF barrier across arachnoid barrier cell layer, blood-CSF barrier across pial microvessels, and outer CSF-brain barrier comprising glial end feet layer/pial surface layer. PMID:25852456

  17. Improved metallic and thermal barrier coatings

    NASA Technical Reports Server (NTRS)

    Stecura, S.

    1981-01-01

    Low thermal conductivity two layer ceramic coatings are efficient thermal barriers between cooled matallic components and high temperature combustion gases. Potential components are combustors, blades, and vanes in aircraft engines of power-generating turbines. Presence of two layer coatings greatly reduces temperature and coolant requirements.

  18. Spontaneously grown GaN and AlGaN nanowires

    NASA Astrophysics Data System (ADS)

    Bertness, K. A.; Roshko, A.; Sanford, N. A.; Barker, J. M.; Davydov, A. V.

    2006-01-01

    We have identified crystal growth conditions in gas-source molecular beam epitaxy (MBE) that lead to spontaneous formation of GaN nanowires with high aspect ratio on Si (1 1 1) substrates. The nanowires were oriented along the GaN c-axis and normal to the substrate surface. Unlike in many other reports of GaN nanowire growth, no metal catalysts were used. Low growth rates at substrate temperatures near 820 °C were combined with high nitrogen flux (partially dissociated with RF plasma excitation) to form well-separated GaN wires with diameters from 50 to 250 nm in diameter and lengths ranging from 2 to 7 μm. The nanowires grew out of an irregular matrix layer containing deep faceted holes. X-ray diffraction indicated that the wires were fully relaxed and aligned to the silicon substrate. The growth morphology was strongly affected by the presence of Al and Be. The changes suggest that surface diffusion is a primary driving force in the growth of GaN nanowires with MBE.

  19. Inductively coupled plasma–reactive ion etching of c- and a-plane AlGaN over the entire Al composition range: Effect of BCl{sub 3} pretreatment in Cl{sub 2}/Ar plasma chemistry

    SciTech Connect

    Shah, Amit P.; Laskar, Masihhur R.; Azizur Rahman, A.; Gokhale, Maheshwar R.; Bhattacharya, Arnab

    2013-11-15

    Inductively coupled plasma (ICP)–reactive ion etching (RIE) patterning is a standard processing step for UV and optical photonic devices based on III-nitride materials. There is little research on ICP-RIE of high Al-content AlGaN alloys and for nonpolar nitride orientations. The authors present a comprehensive study of the ICP-RIE of c- and a-plane AlGaN in Cl{sub 2}/Ar plasma over the entire Al composition range. The authors find that the etch rate decreases in general with increasing Al content, with different behavior for c- and a-plane AlGaN. They also study the effect of BCl{sub 3} deoxidizing plasma pretreatment. An ICP deoxidizing BCl{sub 3} plasma with the addition of argon is more efficient in removal of surface oxides from Al{sub x}Ga{sub 1−x}N than RIE alone. These experiments show that Al{sub x}Ga{sub 1−x}N etching is affected by the higher binding energy of AlN and the higher affinity of oxygen to aluminum compared to gallium, with oxides on a-plane AlGaN more difficult to etch as compared to oxides on c-plane AlGaN, specifically for high Al composition materials. The authors achieve reasonably high etch rate (∼350 nm/min) for high Al-content materials with a smooth surface morphology at a low DC bias of ∼−45 VDC.

  20. Oxygen-Barrier Coating for Titanium

    NASA Technical Reports Server (NTRS)

    Clark, Ronald K.; Unnam, Jalaiah

    1987-01-01

    Oxygen-barrier coating for titanium developed to provide effective and low-cost means for protecting titanium alloys from oxygen in environment when alloys used in high-temperature mechanical or structural applications. Provides protective surface layer, which reduces extent of surface oxidation of alloy and forms barrier to diffusion of oxygen, limiting contamination of substrate alloy by oxygen. Consists of submicron layer of aluminum deposited on surface of titanium by electron-beam evaporation, with submicron layer of dioxide sputtered onto aluminum to form coat.

  1. Thermal barrier coating life prediction model development

    NASA Technical Reports Server (NTRS)

    Demasi, J. T.; Sheffler, K. D.

    1986-01-01

    The objective of this program is to establish a methodology to predict Thermal Barrier Coating (TBC) life on gas turbine engine components. The approach involves experimental life measurement coupled with analytical modeling of relevant degradation modes. The coating being studied is a flight qualified two layer system, designated PWA 264, consisting of a nominal ten mil layer of seven percent yttria partially stabilized zirconia plasma deposited over a nominal five mil layer of low pressure plasma deposited NiCoCrAlY. Thermal barrier coating degradation modes being investigated include: thermomechanical fatigue, oxidation, erosion, hot corrosion, and foreign object damage.

  2. Barrier mechanisms in the Drosophila blood-brain barrier

    PubMed Central

    Hindle, Samantha J.; Bainton, Roland J.

    2014-01-01

    The invertebrate blood-brain barrier (BBB) field is growing at a rapid pace and, in recent years, studies have shown a physiologic and molecular complexity that has begun to rival its vertebrate counterpart. Novel mechanisms of paracellular barrier maintenance through G-protein coupled receptor signaling were the first demonstrations of the complex adaptive mechanisms of barrier physiology. Building upon this work, the integrity of the invertebrate BBB has recently been shown to require coordinated function of all layers of the compound barrier structure, analogous to signaling between the layers of the vertebrate neurovascular unit. These findings strengthen the notion that many BBB mechanisms are conserved between vertebrates and invertebrates, and suggest that novel findings in invertebrate model organisms will have a significant impact on the understanding of vertebrate BBB functions. In this vein, important roles in coordinating localized and systemic signaling to dictate organism development and growth are beginning to show how the BBB can govern whole animal physiologies. This includes novel functions of BBB gap junctions in orchestrating synchronized neuroblast proliferation, and of BBB secreted antagonists of insulin receptor signaling. These advancements and others are pushing the field forward in exciting new directions. In this review, we provide a synopsis of invertebrate BBB anatomy and physiology, with a focus on insights from the past 5 years, and highlight important areas for future study. PMID:25565944

  3. Quantum efficiency of the photocurrent in Schottky barrier structures

    NASA Astrophysics Data System (ADS)

    Simeonov, S. S.; Kafedzhiiska, E. I.; Gerasimov, A. L.

    1987-03-01

    Expressions for the concentration of minority and majority carriers in the illuminated space charge layer of Schottky barrier structures are obtained. The dark current and the photocurrent are determined from the minority and majority carrier concentration at the metal-semiconductor boundary of Schottky barrier structures. A correction to the Gartner expression for the quantum efficiency of the Schottky barrier structures is given. A qualitative estimation of a short-wavelength decrease in the quantum efficiency of Schottky barrier structures is proposed.

  4. Highly Stable Sr-Free Cobaltite-Based Perovskite Cathodes Directly Assembled on a Barrier-Layer-Free Y2 O3 -ZrO2 Electrolyte of Solid Oxide Fuel Cells.

    PubMed

    Ai, Na; Li, Na; Rickard, William D A; Cheng, Yi; Chen, Kongfa; Jiang, San Ping

    2017-03-09

    Direct assembly is a newly developed technique in which a cobaltite-based perovskite (CBP) cathode can be directly applied to a barrier-layer-free Y2 O3 -ZrO2 (YSZ) electrolyte with no high-temperature pre-sintering steps. Solid oxide fuel cells (SOFCs) based on directly assembled CBPs such as La0.6 Sr0.4 Co0.2 Fe0.8 O3-δ show high performance initially but degrade rapidly under SOFC operation conditions at 750 °C owing to Sr segregation and accumulation at the electrode/electrolyte interface. Herein, the performance and interface of Sr-free CBPs such as LaCoO3-δ (LC) and Sm0.95 CoO3-δ (SmC) and their composite cathodes directly assembled on YSZ electrolyte was studied systematically. The LC electrode underwent performance degradation, most likely owing to cation demixing and accumulation of La on the YSZ electrolyte under polarization at 500 mA cm(-2) and 750 °C. However, the performance and stability of LC electrodes could be substantially enhanced by the formation of LC-gadolinium-doped ceria (GDC) composite cathodes. Replacement of La by Sm increased the cell stability, and doping of 5 % Pd to form Sm0.95 Co0.95 Pd0.05 O3-δ (SmCPd) significantly improved the electrode activity. An anode-supported YSZ-electrolyte cell with a directly assembled SmCPd-GDC composite electrode exhibited a peak power density of 1.4 W cm(-2) at 750 °C, and an excellent stability at 750 °C for over 240 h. The higher stability of SmC as compared to that of LC is most likely a result of the lower reactivity of SmC with YSZ. This study demonstrates the new opportunities in the design and development of intermediate-temperature SOFCs based on the directly assembled high-performance and durable Sr-free CBP cathodes.

  5. Numerical simulations of capillary barrier field tests

    SciTech Connect

    Morris, C.E.; Stormont, J.C.

    1997-12-31

    Numerical simulations of two capillary barrier systems tested in the field were conducted to determine if an unsaturated flow model could accurately represent the observed results. The field data was collected from two 7-m long, 1.2-m thick capillary barriers built on a 10% grade that were being tested to investigate their ability to laterally divert water downslope. One system had a homogeneous fine layer, while the fine soil of the second barrier was layered to increase its ability to laterally divert infiltrating moisture. The barriers were subjected first to constant infiltration while minimizing evaporative losses and then were exposed to ambient conditions. The continuous infiltration period of the field tests for the two barrier systems was modelled to determine the ability of an existing code to accurately represent capillary barrier behavior embodied in these two designs. Differences between the field test and the model data were found, but in general the simulations appeared to adequately reproduce the response of the test systems. Accounting for moisture retention hysteresis in the layered system will potentially lead to more accurate modelling results and is likely to be important when developing reasonable predictions of capillary barrier behavior.

  6. Oxygen diffusion barrier coating

    NASA Technical Reports Server (NTRS)

    Unnam, Jalaiah (Inventor); Clark, Ronald K. (Inventor)

    1987-01-01

    A method for coating a titanium panel or foil with aluminum and amorphous silicon to provide an oxygen barrier abrogating oxidation of the substrate metal is developed. The process is accomplished with known inexpensive procedures common in materials research laboratories, i.e., electron beam deposition and sputtering. The procedures are conductive to treating foil gage titanium and result in submicron layers which virtually add no weight to the titanium. There are no costly heating steps. The coatings blend with the substrate titanium until separate mechanical properties are subsumed by those of the substrate without cracking or spallation. This method appreciably increases the ability of titanium to mechanically perform in high thermal environments such as those witnessed on structures of space vehicles during re-entry

  7. Thermal barrier coating resistant to sintering

    DOEpatents

    Subramanian, Ramesh; Sabol, Stephen M.

    2001-01-01

    A device (10) having a ceramic thermal barrier coating layer (16) characterized by a microstructure having gaps (18) with a sintering inhibiting material (22) disposed on the columns (20) within the gaps (18). The sintering resistant material (22) is stable over the range of operating temperatures of the device (10) and is not soluble with the underlying ceramic layer (16). For a YSZ ceramic layer (16) the sintering resistant layer (22) may preferably be aluminum oxide or yttrium aluminum oxide, deposited as a continuous layer or as nodules.

  8. Filaggrin and Skin Barrier Function.

    PubMed

    Kezic, Sanja; Jakasa, Ivone

    2016-01-01

    The skin barrier function is greatly dependent on the structure and composition of the uppermost layer of the epidermis, the stratum corneum (SC), which is made up of flattened anucleated cells surrounded by highly organized and continuous lipid matrix. The interior of the corneocytes consists mainly of keratin filaments aggregated by filaggrin (FLG) protein. Next, together with several other proteins, FLG is cross-linked into a mechanically robust cornified cell envelope providing a scaffold for the extracellular lipid matrix. In addition to its role for the SC structural and mechanical integrity, FLG degradation products account in part for the water-holding capacity and maintenance of acidic pH of the SC, both crucial for the epidermal barrier homoeostasis by regulating activity of multiple enzymes that control desquamation, lipid synthesis and inflammation. The major determinant of FLG expression in the skin are loss-of-function mutations in FLG, the strongest genetic risk factor for atopic dermatitis (AD), an inflammatory skin disease characterized by a reduced skin barrier function. The prevalence of FLG mutations varies greatly among different populations and ranges from about 10% in Northern Europeans to less than 1% in the African populations. An impaired skin barrier facilitates absorption of potentially hazardous chemicals, which might cause adverse effects in the skin, such as contact dermatitis, or systemic toxicity after their passage into blood. In another direction, a leaky epidermal barrier will lead to enhanced loss of water from the skin. A recent study has shown that even subtle increase in epidermal water loss in newborns increases the risk for AD. Although there are multiple modes of action by which FLG might affect skin barrier it is still unclear whether and how FLG deficiency leads to the reduced skin barrier function. This chapter summarizes the current knowledge in this field obtained from clinical studies, and animal and in vitro models

  9. Permeability Barrier Generation in the Martian Lithosphere

    NASA Astrophysics Data System (ADS)

    Schools, Joe; Montési, Laurent

    2015-11-01

    Permeability barriers develop when a magma produced in the interior of a planet rises into the cooler lithosphere and crystallizes more rapidly than the lithosphere can deform (Sparks and Parmentier, 1991). Crystallization products may then clog the porous network in which melt is propagating, reducing the permeability to almost zero, i.e., forming a permeability barrier. Subsequent melts cannot cross the barrier. Permeability barriers have been useful to explain variations in crustal thickness at mid-ocean ridges on Earth (Magde et al., 1997; Hebert and Montési, 2011; Montési et al., 2011). We explore here under what conditions permeability barriers may form on Mars.We use the MELTS thermodynamic calculator (Ghiorso and Sack, 1995; Ghiorso et al., 2002; Asimow et al., 2004) in conjunction with estimated Martian mantle compositions (Morgan and Anders, 1979; Wänke and Dreibus, 1994; Lodders and Fegley, 1997; Sanloup et al., 1999; Taylor 2013) to model the formation of permeability barriers in the lithosphere of Mars. In order to represent potential past and present conditions of Mars, we vary the lithospheric thickness, mantle potential temperature (heat flux), oxygen fugacity, and water content.Our results show that permeability layers can develop in the thermal boundary layer of the simulated Martian lithosphere if the mantle potential temperature is higher than ~1500°C. The various Martian mantle compositions yield barriers in the same locations, under matching variable conditions. There is no significant difference in barrier location over the range of accepted Martian oxygen fugacity values. Water content is the most significant influence on barrier development as it reduces the temperature of crystallization, allowing melt to rise further into the lithosphere. Our lower temperature and thicker lithosphere model runs, which are likely the most similar to modern Mars, show no permeability barrier generation. Losing the possibility of having a permeability

  10. Multilayer coatings for flexible high-barrier materials

    NASA Astrophysics Data System (ADS)

    Vaško, Karol; Noller, Klaus; Mikula, Milan; Amberg-Schwab, Sabine; Weber, Ulrike

    2009-06-01

    A multilayer, flexible, and transparent high-barrier system based on flexible plastic foils, polyethyleneterephthalate (PET) and ethylene-tetrafluoroethylene-copolymer (ETFE), combined with vacuum-deposited, inorganic SiOx layers and hybrid ORMOCER® varnish layers were prepared in different orders on a semiproduction level. Barrier properties of prepared systems, as water vapour transmission (WVTR) and oxygen transmission (OTR), were measured and studied in connection with surface energy, surface topography, and water vapour adsorption properties. Correlations among layers sequence, barrier properties, and other parameters are presented, including some basic principles of permeation of substances through multilayer barrier systems. A combination of several inorganic and hybrid varnish layers is necessary to achieve the technological demands from a barrier standpoint. It is easier to suppress the oxygen transport than the water transport, due to the additional active penetration of water through hydrogen bonds and silanol creations at oxide interfaces, capillary condensation, and swelling with high internal pressure, leading to new defects.

  11. Multilayer coatings for flexible high-barrier materials

    NASA Astrophysics Data System (ADS)

    Vaško, Karol; Noller, Klaus; Mikula, Milan; Amberg-Schwab, Sabine; Weber, Ulrike

    2009-06-01

    A multilayer, flexible, and transparent high-barrier system based on flexible plastic foils, polyethyleneterephthalate (PET) and ethylene-tetrafluoroethylene-copolymer (ETFE), combined with vacuum-deposited, inorganic SiOx layers and hybrid ORMOCER® varnish layers were prepared in different orders on a semiproduction level. Barrier properties of prepared systems, as water vapour transmission (WVTR) and oxygen transmission (OTR), were measured and studied in connection with surface energy, surface topography, and water vapour adsorption properties. Correlations among layers sequence, barrier properties, and other parameters are presented, including some basic principles of permeation of substances through multilayer barrier systems. A combination of several inorganic and hybrid varnish layers is necessary to achieve the technological demands from a barrier standpoint. It is easier to suppress the oxygen transport than the water transport, due to the additional active penetration of water through hydrogen bonds and silanol creations at oxide interfaces, capillary condensation, and swelling with high internal pressure, leading to new defects.

  12. Field study plan for alternate barriers

    SciTech Connect

    Freeman, H.D.; Gee, G.W.; Relyea, J.F.

    1989-05-01

    Pacific Northwest Laboratory (PNL) is providing technical assistance in selecting, designing, evaluating, and demonstrating protective barriers. As part of this technical assistance effort, asphalt, clay, and chemical grout will be evaluated for use as alternate barriers. The purpose of the subsurface layer is to reduce the likelihood that extreme events (i.e., 100-year maximum storms, etc.) will cause significant drainage through the barrier. The tests on alternate barriers will include laboratory and field analysis of the subsurface layer performance. This field test plan outlines the activities required to test and design subsurface moisture barriers. The test plan covers activities completed in FY 1988 and planned through FY 1992 and includes a field-scale test of one or more of the alternate barriers to demonstrate full-scale application techniques and to provide performance data on a larger scale. Tests on asphalt, clay, and chemical grout were initiated in FY 1988 in small (30.5 cm diameter) tube-layer lysimeters. The parameters used for testing the materials were different for each one. The tests had to take into account the differences in material characteristics and response to change in conditions, as well as information provided by previous studies. 33 refs., 8 figs., 1 tab.

  13. Richards Barrier LA Reference Design Feature Evaluation

    SciTech Connect

    N.E. Kramer

    1999-11-17

    The Richards Barrier is one of the design features of the repository to be considered for the License Application (LA), Richards was a soil scientist who first described the diversion of moisture between two materials with different hydrologic properties. In this report, a Richards Barrier is a special type of backfill with a fine-grained material (such as sand) overlaying a coarse-grained material (such as gravel). Water that enters an emplacement drift will first encounter the fine-grained material and be transported around the coarse-grained material covering the waste package, thus protecting the waste package from contact with most of the groundwater. The objective of this report is to discuss the benefits and liabilities to the repository by the inclusion of a Richards Barrier type backfill in emplacement drifts. The Richards Barrier can act as a barrier to water flow, can reduce the waste package material dissolution rate, limit mobilization of the radionuclides, and can provide structural protection for the waste package. The scope of this report is to: (1) Analyze the behavior of barrier materials following the intrusion of groundwater for influxes of 1 to 300 mm per year. The report will demonstrate diversion of groundwater intrusions into the barrier over an extended time period when seismic activity and consolidation may cause the potential for liquefaction and settlement of the Richards Barrier. (2) Review the thermal effects of the Richards Barrier on material behavior. (3) Analyze the effect of rockfall on the performance of the Richards Barrier and the depth of the barrier required to protect waste packages under the barrier. (4) Review radiological and heating conditions on placement of multiple layers of the barrier. Subsurface Nuclear Safety personnel will perform calculations to determine the radiation reduction-time relationship and shielding capacity of the barrier. (5) Evaluate the effects of ventilation on cooling of emplacement drifts and

  14. Pratt & Whitney thermal barrier coatings

    SciTech Connect

    Bornstein, N.; Marcin, J.

    1995-10-01

    The objective of the Advanced Turbine Systems (ATS) Program is to develop ultra-high efficient, environmentally superior, and cost competitive gas turbine systems. The operating profiles of these industrial gas turbines are long, less cyclic with fewer transients-compared with those for aircraft gas turbine engines. Therefore, creep rather than thermal fatigue, becomes primary life-limiting for hot section components. Thermal barrier coatings (TBCs) will be used to achieve the objectives of the program. TBCs allow surface temperatures to increase without compromising the structural properties of the alloy. TBCs typically consist of a ceramic insulating layer, deposited onto the substrate with an intervening metallic layer, which imparts oxidation protection to the substrate and provides a surface to which the ceramic layer can adhere.

  15. Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240–350 nm emission

    SciTech Connect

    Himwas, C.; Hertog, M. den; Dang, Le Si; Songmuang, R.; Monroy, E.

    2014-12-15

    We present structural and optical studies of AlGaN sections and AlGaN/AlN nanodisks (NDs) in nanowires grown by plasma-assisted molecular beam epitaxy. The Al-Ga intermixing at Al(Ga)N/GaN interfaces and the chemical inhomogeneity in AlGaN NDs evidenced by scanning transmission electron microscopy are attributed to the strain relaxation process. This interpretation is supported by the three-dimensional strain distribution calculated by minimizing the elastic energy in the structure. The alloy inhomogeneity increases with the Al content, leading to enhanced carrier localization signatures in the luminescence characteristics, i.e., red shift of the emission, s-shaped temperature dependence, and linewidth broadening. Despite these effects, the emission energy of AlGaN/AlN NDs can be tuned in the 240–350 nm range with internal quantum efficiencies around 30%.

  16. Growth of free-standing bulk wurtzite AlxGa1-xN layers by molecular beam epitaxy using a highly efficient RF plasma source

    NASA Astrophysics Data System (ADS)

    Novikov, S. V.; Staddon, C. R.; Sahonta, S.-L.; Oliver, R. A.; Humphreys, C. J.; Foxon, C. T.

    2016-12-01

    The recent development of group III nitrides allows researchers world-wide to consider AlGaN based light emitting diodes as a possible new alternative deep ultra-violet light source for surface decontamination and water purification. In this paper we will describe our recent results on plasma-assisted molecular beam epitaxy (PA-MBE) growth of free-standing wurtzite AlxGa1-xN bulk crystals using the latest model of Riber's highly efficient nitrogen RF plasma source. We have achieved AlGaN growth rates up to 3 μm/h. Wurtzite AlxGa1-xN layers with thicknesses up to 100 μm were successfully grown by PA-MBE on 2-inch and 3-inch GaAs (111)B substrates. After growth the GaAs was subsequently removed using a chemical etch to achieve free-standing AlxGa1-xN wafers. Free-standing bulk AlxGa1-xN wafers with thicknesses in the range 30-100 μm may be used as substrates for further growth of AlxGa1-xN-based structures and devices. High Resolution Scanning Transmission Electron Microscopy (HR-STEM) and Convergent Beam Electron Diffraction (CBED) were employed for detailed structural analysis of AlGaN/GaAs (111)B interface and allowed us to determine the N-polarity of AlGaN layers grown on GaAs (111)B substrates. The novel, high efficiency RF plasma source allowed us to achieve free-standing AlxGa1-xN layers in a single day's growth, making this a commercially viable process.

  17. Rocket Motor Joint Construction Including Thermal Barrier

    NASA Technical Reports Server (NTRS)

    Steinetz, Bruce M. (Inventor); Dunlap, Patrick H., Jr. (Inventor)

    2002-01-01

    A thermal barrier for extremely high temperature applications consists of a carbon fiber core and one or more layers of braided carbon fibers surrounding the core. The thermal barrier is preferably a large diameter ring, having a relatively small cross-section. The thermal barrier is particularly suited for use as part of a joint structure in solid rocket motor casings to protect low temperature elements such as the primary and secondary elastomeric O-ring seals therein from high temperature gases of the rocket motor. The thermal barrier exhibits adequate porosity to allow pressure to reach the radially outward disposed O-ring seals allowing them to seat and perform the primary sealing function. The thermal barrier is disposed in a cavity or groove in the casing joint, between the hot propulsion gases interior of the rocket motor and primary and secondary O-ring seals. The characteristics of the thermal barrier may be enhanced in different applications by the inclusion of certain compounds in the casing joint, by the inclusion of RTV sealant or similar materials at the site of the thermal barrier, and/or by the incorporation of a metal core or plurality of metal braids within the carbon braid in the thermal barrier structure.

  18. Holographic recording medium employing a photoconductive layer and a low molecular weight microcrystalline polymeric layer

    NASA Technical Reports Server (NTRS)

    Gange, Robert Allen (Inventor)

    1977-01-01

    A holographic recording medium comprising a conductive substrate, a photoconductive layer and an electrically alterable layer of a linear, low molecular weight hydrocarbon polymer has improved fatigue resistance. An acrylic barrier layer can be interposed between the photoconductive and electrically alterable layers.

  19. MOVPE growth of GaN on 6-inch SOI-substrates: effect of substrate parameters on layer quality and strain

    NASA Astrophysics Data System (ADS)

    Lemettinen, J.; Kauppinen, C.; Rudzinski, M.; Haapalinna, A.; Tuomi, T. O.; Suihkonen, S.

    2017-04-01

    We demonstrate that higher crystalline quality, lower strain and improved electrical characteristics can be achieved in gallium nitride (GaN) epitaxy by using a silicon-on-insulator (SOI) substrate compared to a bulk silicon (Si) substrate. GaN layers were grown by metal–organic vapor phase epitaxy on 6-inch bulk Si and SOI wafers using the standard step graded AlGaN and AlN approach. The GaN layers grown on SOI exhibited lower strain according to x-ray diffraction analysis. Defect selective etching measurements suggested that the use of SOI substrate for GaN epitaxy reduces the dislocation density approximately by a factor of two. Furthermore, growth on SOI substrate allows one to use a significantly thinner AlGaN buffer compared to bulk Si. Synchrotron radiation x-ray topography analysis confirmed that the stress relief mechanism in GaN on SOI epitaxy is the formation of a dislocation network to the SOI device Si layer. In addition, the buried oxide layer significantly improves the vertical leakage characteristics as the onset of the breakdown is delayed by approximately 400 V. These results show that the GaN on the SOI platform is promising for power electronics applications.

  20. Interface control technologies for high-power GaN transistors: Self-stopping etching of p-GaN layers utilizing electrochemical reactions

    NASA Astrophysics Data System (ADS)

    Sato, Taketomo; Kumazaki, Yusuke; Edamoto, Masaaki; Akazawa, Masamichi; Hashizume, Tamotsu

    2016-02-01

    The selective and low-damaged etching of p-type GaN or AlGaN layer is inevitable process for AlGaN/GaN high-power transistors. We have investigated an electrochemical etching of p-GaN layer grown on AlGaN/GaN heterostructures, consisting of an anodic oxidation of p-GaN surface and a subsequent dissolution of the resulting oxide. The p-GaN layer was electrochemically etched by following the pattern of the SiO2 film that acted as an etching mask. Etching depth was linearly controlled by cycle number of triangular waveform at a rate of 25 nm/cycle. The AFM, TEM and μ-AES results showed that the top p-GaN layer was completely removed after 5 cycles applied, and the etching reaction was automatically sopped on the AlGaN surface. I-V and C-V measurements revealed that no significant damages were induced in the AlGaN/GaN heterostructures.

  1. Psoriasis genetics: breaking the barrier

    PubMed Central

    Roberson, Elisha D.O.; Bowcock, Anne M.

    2010-01-01

    Psoriasis is a common incurable inflammatory skin disease affecting 2–3% of the European population. Psoriatic skin contains large numbers of immune cells which produce many cytokines, chemokines and inflammatory molecules. The epidermis divides much faster than normal and has a defective outer layer or barrier which under normal circumstances protects from infection and dehydration. Psoriatic skin is characterized by a distinct set of inflammation and epidermal proliferation and differentiation markers, and it has not been clear if the genetic basis of psoriasis is due to defects of the immune system or the skin. One genetic determinant lies within the major histocompatibility complex class 1 region. Genome-wide association studies have revealed genetic susceptibility factors that play a role in the formation of immune cells found in psoriasis lesions. Others affect epidermal proliferation and the formation of the skin’s barrier. Hence, genetic components of both the immune system and the epidermis predispose to disease. PMID:20692714

  2. Thermal barrier coating resistant to sintering

    DOEpatents

    Subramanian, Ramesh; Seth, Brij B.

    2004-06-29

    A device (10) is made, having a ceramic thermal barrier coating layer (16) characterized by a microstructure having gaps (18) with a sintering inhibiting material (22) disposed on the columns (20) within the gaps (18). The sintering resistant material (22) is stable over the range of operating temperatures of the device (10), is not soluble with the underlying ceramic layer (16) and is applied by a process that is not an electron beam physical vapor deposition process.

  3. The Barriers Project.

    ERIC Educational Resources Information Center

    Confederation Coll. of Applied Arts and Technology, Thunder Bay (Ontario).

    In 1987, the Barriers Project was initiated by Confederation College of Applied Arts and Technology to engage 31 selected community colleges in Canada in an organized self-appraisal of institutional barriers to the enrollment of part-time credit students. From the outset, colleges were encouraged to limit their investigation to barriers over which…

  4. Ocean Barrier Layers’ Effect on Tropical Cyclone Intensification

    SciTech Connect

    Balaguru, Karthik; Chang, P.; Saravanan, R.; Leung, Lai-Yung R.; Xu, Zhao; Li, M.; Hsieh, J.

    2012-09-04

    Improving a tropical cyclone's forecast and mitigating its destructive potential requires knowledge of various environmental factors that influence the cyclone's path and intensity. Herein, using a combination of observations and model simulations, we systematically demonstrate that tropical cyclone intensification is significantly affected by salinity-induced barrier layers, which are 'quasi-permanent' features in the upper tropical oceans. When tropical cyclones pass over regions with barrier layers, the increased stratification and stability within the layer reduce storm-induced vertical mixing and sea surface temperature cooling. This causes an increase in enthalpy flux from the ocean to the atmosphere and, consequently, an intensification of tropical cyclones. On average, the tropical cyclone intensification rate is nearly 50% higher over regions with barrier layers, compared to regions without. Our finding, which underscores the importance of observing not only the upper-ocean thermal structure but also the salinity structure in deep tropical barrier layer regions, may be a key to more skillful predictions of tropical cyclone intensities through improved ocean state estimates and simulations of barrier layer processes. As the hydrological cycle responds to global warming, any associated changes in the barrier layer distribution must be considered in projecting future tropical cyclone activity.

  5. Fabrication of novel electrolyte-layer free fuel cell with semi-ionic conductor (Ba0.5Sr0.5Co0.8Fe0.2O3-δ- Sm0.2Ce0.8O1.9) and Schottky barrier

    NASA Astrophysics Data System (ADS)

    Afzal, Muhammad; Saleemi, Mohsin; Wang, Baoyuan; Xia, Chen; Zhang, Wei; He, Yunjuan; Jayasuriya, Jeevan; Zhu, Bin

    2016-10-01

    Perovskite Ba0.5Sr0.5Co0.8Fe0.2O3-δ (BSCF) is synthesized via a chemical co-precipitation technique for a low temperature solid oxide fuel cell (LTSOFC) (300-600 °C) and electrolyte-layer free fuel cell (EFFC) in a comprehensive study. The EFFC with a homogeneous mixture of samarium doped ceria (SDC): BSCF (60%:40% by weight) which is rather similar to the cathode (SDC: BSCF in 50%:50% by weight) used for a three layer SOFC demonstrates peak power densities up to 655 mW/cm2, while a three layer (anode/electrolyte/cathode) SOFC has reached only 425 mW/cm2 at 550 °C. Chemical phase, crystal structure and morphology of the as-prepared sample are characterized by X-ray diffraction and field emission scanning electron microscopy coupled with energy dispersive spectroscopy. The electrochemical performances of 3-layer SOFC and EFFC are studied by electrochemical impedance spectroscopy (EIS). As-prepared BSCF has exhibited a maximum conductivity above 300 S/cm at 550 °C. High performance of the EFFC device corresponds to a balanced combination between ionic and electronic (holes) conduction characteristic. The Schottky barrier prevents the EFFC from the electronic short circuiting problem which also enhances power output. The results provide a new way to produce highly effective cathode materials for LTSOFC and semiconductor designs for EFFC functions using a semiconducting-ionic material.

  6. Extremal surface barriers

    NASA Astrophysics Data System (ADS)

    Engelhardt, Netta; Wall, Aron C.

    2014-03-01

    We present a generic condition for Lorentzian manifolds to have a barrier that limits the reach of boundary-anchored extremal surfaces of arbitrary dimension. We show that any surface with nonpositive extrinsic curvature is a barrier, in the sense that extremal surfaces cannot be continuously deformed past it. Furthermore, the outermost barrier surface has nonnegative extrinsic curvature. Under certain conditions, we show that the existence of trapped surfaces implies a barrier, and conversely. In the context of AdS/CFT, these barriers imply that it is impossible to reconstruct the entire bulk using extremal surfaces. We comment on the implications for the firewall controversy.

  7. Thick thermal barrier coatings for diesel components

    NASA Technical Reports Server (NTRS)

    Yonushonis, T. M.

    1991-01-01

    An engineered thick thermal barrier coating consisting of multiple layers of zirconia and CoCrAlY with a zirconia top layer and having a system thermal conductance less than 410 w/m(exp 2)K exceeded the 100 hour engine durability goals set forth in this program. The thermal barrier coatings were intact at the test conclusion. Back to back single cylinder research engine tests were conducted with watercooled, metal hardware and oil-cooled, thermal barrier coating insulated hardware to determine apparent heat release and fuel economy. Apparent heat release data revealed that the insulated engine had a shorter ignition delay and a longer combustion duration than the metal engine. The insulated engine fuel economy was approximately two percent worse on average for this series of tests. There was no attempt to optimize engine efficiency of the insulated engine by modifying the engine timing, coating, or other techniques.

  8. Hanford Permanent Isolation Barrier Program: Asphalt technology test plan

    SciTech Connect

    Freeman, H.D.; Romine, R.A.

    1994-05-01

    The Hanford Permanent Isolation Barriers use engineered layers of natural materials to create an integrated structure with backup protective features. The objective of current designs is to develop a maintenance-free permanent barrier that isolates wastes for a minimum of 1000 years by limiting water drainage to near-zero amounts. Asphalt is being used as an impermeable water diversion layer to provide a redundant layer within the overall barrier design. Data on asphalt barrier properties in a buried environment are not available for the required 100-year time frame. The purpose of this test plan is to outline the activities planned to obtain data with which to estimate performance of the asphalt layers.

  9. Method Producing an SNS Superconducting Junction with Weak Link Barrier

    NASA Technical Reports Server (NTRS)

    Hunt, Brian D. (Inventor)

    1999-01-01

    A method of producing a high temperature superconductor Josephson element and an improved SNS weak link barrier element is provided. A YBaCuO superconducting electrode film is deposited on a substrate at a temperature of approximately 800 C. A weak link barrier layer of a nonsuperconducting film of N-YBaCuO is deposited over the electrode at a temperature range of 520 C. to 540 C. at a lower deposition rate. Subsequently a superconducting counter-electrode film layer of YBaCuO is deposited over the weak link barrier layer at approximately 800 C. The weak link barrier layer has a thickness of approximately 50 A and the SNS element can be constructed to provide an edge geometry junction.

  10. Skin barrier in atopic dermatitis: beyond filaggrin*

    PubMed Central

    Zaniboni, Mariana Colombini; Samorano, Luciana Paula; Orfali, Raquel Leão; Aoki, Valéria

    2016-01-01

    Atopic dermatitis is a chronic inflammatory skin disease with a complex pathogenesis, where changes in skin barrier and imbalance of the immune system are relevant factors. The skin forms a mechanic and immune barrier, regulating water loss from the internal to the external environment, and protecting the individual from external aggressions, such as microorganisms, ultraviolet radiation and physical trauma. Main components of the skin barrier are located in the outer layers of the epidermis (such as filaggrin), the proteins that form the tight junction (TJ) and components of the innate immune system. Recent data involving skin barrier reveal new information regarding its structure and its role in the mechanic-immunological defense; atopic dermatitis (AD) is an example of a disease related to dysfunctions associated with this complex. PMID:27579743

  11. Water-retaining barrier and method of construction

    DOEpatents

    Adams, M.R.; Field, J.G.

    1996-02-20

    An agricultural barrier is disclosed which provides a medium for supporting plant life in an arid or semi-arid land region having a ground surface. The barrier is disposed on native soil of the region. The barrier includes a first porous layer composed of pieces of basalt, and is in contact with the native soil. There is a less porous second layer of at least one material selected from at least one of sand and gravel. The second layer overlies the first layer. A third layer, less porous than the second layer, contains soil which favors plant growth. The third layer overlies the second layer and has an exposed upper surface. The porosities of the second and third layers differ from one another by an amount which impedes transport of soil from the first layer into the second layer. Soil for the third layer may be provided by washing salinated or contaminated soil with water and using the washed soil for the third layer. 2 figs.

  12. Water-retaining barrier and method of construction

    DOEpatents

    Adams, Melvin R.; Field, Jim G.

    1996-01-01

    An agricultural barrier providing a medium for supporting plant life in an arid or semi-arid land region having a ground surface, the barrier being disposed on native soil of the region, the barrier including: a first layer composed of pieces of basalt, the first layer being porous and being in contact with the native soil; a porous second layer of at least one material selected from at least one of sand and gravel, the second layer being less porous than, and overlying, the first layer; and a porous third layer containing soil which favors plant growth, the third layer being less porous than, and overlying, the second layer and having an exposed upper surface, wherein the porosities of the second and third layers differ from one another by an amount which impedes transport of soil from the first layer into the second layer. Soil for the third layer may be provided by washing salinated or contaminated soil with water and using the washed soil for the third layer.

  13. Surface barrier research at the Hanford Site

    SciTech Connect

    Gee, G.W.; Ward, A.L.; Fayer, M.J.

    1997-12-31

    At the DOE Hanford Site, a field-scale prototype surface barrier was constructed in 1994 over an existing waste site as a part of a CERCLA treatability test. The above-grade barrier consists of a fine-soil layer overlying coarse layers of sands, gravels, basalt rock (riprap), and a low permeability asphalt layer. Two sideslope configurations, clean-fill gravel on a 10:1 slope and basalt riprap on a 2:1 slope, were built and are being tested. Design considerations included: constructability; drainage and water balance monitoring, wind and water erosion control and monitoring; surface revegetation and biotic intrusion; subsidence and sideslope stability, and durability of the asphalt layer. The barrier is currently in the final year of a three-year test designed to answer specific questions related to stability and long-term performance. One half of the barrier is irrigated such that the total water applied, including precipitation, is 480 mm/yr (three times the long-term annual average). Each year for the past two years, an extreme precipitation event (71 mm in 8 hr) representing a 1,000-yr return storm was applied in late March, when soil water storage was at a maximum. While the protective sideslopes have drained significant amounts of water, the soil cover (2-m of silt-loam soil overlying coarse sand and rock) has never drained. During the past year there was no measurable surface runoff or wind erosion. This is attributed to extensive revegetation of the surface. In addition, the barrier elevation has shown a small increase of 2 to 3 cm that is attributed to a combination of root proliferation and freeze/thaw activity. Testing will continue through September 1997. Performance data from the prototype barrier will be used by DOE in site-closure decisions at Hanford.

  14. High Operating Temperature Barrier Infrared Detector with Tailorable Cutoff Wavelength

    NASA Technical Reports Server (NTRS)

    Ting, David Z. (Inventor); Hill, Cory J. (Inventor); Seibel, Alexander (Inventor); Bandara, Sumith Y. (Inventor); Gunapala, Sarath D. (Inventor)

    2015-01-01

    A barrier infrared detector with absorber materials having selectable cutoff wavelengths and its method of manufacture is described. A GaInAsSb absorber layer may be grown on a GaSb substrate layer formed by mixing GaSb and InAsSb by an absorber mixing ratio. A GaAlAsSb barrier layer may then be grown on the barrier layer formed by mixing GaSb and AlSbAs by a barrier mixing ratio. The absorber mixing ratio may be selected to adjust a band gap of the absorber layer and thereby determine a cutoff wavelength for the barrier infrared detector. The absorber mixing ratio may vary along an absorber layer growth direction. Various contact layer architectures may be used. In addition, a top contact layer may be isolated into an array of elements electrically isolated as individual functional detectors that may be used in a detector array, imaging array, or focal plane array.

  15. Method of making dense, conformal, ultra-thin cap layers for nanoporous low-k ILD by plasma assisted atomic layer deposition

    DOEpatents

    Jiang, Ying-Bing; Cecchi, Joseph L.; Brinker, C. Jeffrey

    2011-05-24

    Barrier layers and methods for forming barrier layers on a porous layer are provided. The methods can include chemically adsorbing a plurality of first molecules on a surface of the porous layer in a chamber and forming a first layer of the first molecules on the surface of the porous layer. A plasma can then be used to react a plurality of second molecules with the first layer of first molecules to form a first layer of a barrier layer. The barrier layers can seal the pores of the porous material, function as a diffusion barrier, be conformal, and/or have a negligible impact on the overall ILD k value of the porous material.

  16. In-situ formation of multiphase deposited thermal barrier coatings

    DOEpatents

    Subramanian, Ramesh

    2004-01-13

    A multiphase ceramic thermal barrier coating is provided. The coating is adapted for use in high temperature applications in excess of about 1200.degree. C., for coating superalloy components of a combustion turbine engine. The coating comprises a ceramic single or two oxide base layer disposed on the substrate surface; and a ceramic oxide reaction product material disposed on the base layer, the reaction product comprising the reaction product of the base layer with a ceramic single or two oxide overlay layer.

  17. Improved performance thermal barrier coatings

    NASA Technical Reports Server (NTRS)

    Levine, S. R.; Miller, R. A.; Stecura, S.

    1983-01-01

    Thermal barrier coatings offer an attractive approach to improving the durability and efficiency of the hot section of heat engines. The coatings typically consist of an inner alloy bond coating about 0.01 cm thick resistant to oxidation and hot corrosion and an outer ceramic layer, usually a stabilized zirconia, 0.01-0.05 cm thick. Here, the materials, thermomechanical stress, and hot corrosion problems associated with thermal barrier coatings are reviewed along with the capabilities and limitations of current technology. The coatings discussed include ZrO2-Y2O3/NiCrAlY, ZrO2-Y2O3/NiCoCrAlY, ZrO2-MgO/NiCoCrAlY, CaO-SiO2/Co-Cr-Al-Y, and CaO-SiO2/NiCrAlY systems. It is emphasized that the performance of thermal barrier coatings is governed by many complex and interrelated factors, so that optimization of these coatings always involves certain tradeoffs.

  18. High quality Al0.99Ga0.01N layers on sapphire substrates grown at 1150 °C by metalorganic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Katsuno, Shota; Yasuda, Toshiki; Hagiwara, Koudai; Koide, Norikatsu; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

    2017-01-01

    We systematically investigated metalorganic vapor phase epitaxy (MOVPE) growths of AlN layers with trimethylgallium (TMGa) supply on sapphire substrates at 1100-1250 °C. We found that Ga incorporations into the AlN layers contributed to smooth surfaces covered with step terraces at the early stage of the Al(Ga)N growth. In addition, a GaN mole fraction leading to the smooth surfaces was found to be around 2-3% at the beginning of growth. The Ga supply during the AlN layer growth at 1150 °C provided very smooth Al0.99Ga0.01N layers on sapphire substrates.

  19. Hot Corrosion Mechanism in Multi-Layer Suspension Plasma Sprayed Gd2Zr2O7 /YSZ Thermal Barrier Coatings in the Presence of V2O5 + Na2SO4

    NASA Astrophysics Data System (ADS)

    Jonnalagadda, Krishna Praveen; Mahade, Satyapal; Curry, Nicholas; Li, Xin-Hai; Markocsan, Nicolaie; Nylén, Per; Björklund, Stefan; Peng, Ru Lin

    2017-01-01

    This study investigates the corrosion resistance of two-layer Gd2Zr2O7/YSZ, three-layer dense Gd2Zr2O7/ Gd2Zr2O7/YSZ, and a reference single-layer YSZ coating with a similar overall top coat thickness of 300-320 µm. All the coatings were manufactured by suspension plasma spraying resulting in a columnar structure except for the dense layer. Corrosion tests were conducted at 900 °C for 8 h using V2O5 and Na2SO4 as corrosive salts at a concentration of approximately 4 mg/cm2. SEM investigations after the corrosion tests show that Gd2Zr2O7-based coatings exhibited lower reactivity with the corrosive salts and the formation of gadolinium vanadate (GdVO4), accompanied by the phase transformation of zirconia was observed. It is believed that the GdVO4 formation between the columns reduced the strain tolerance of the coating and also due to the fact that Gd2Zr2O7 has a lower fracture toughness value made it more susceptible to corrosion-induced damage. Furthermore, the presence of a relatively dense layer of Gd2Zr2O7 on the top did not improve in reducing the corrosion-induced damage. For the reference YSZ coating, the observed corrosion-induced damage was lower probably due to combination of more limited salt penetration, the SPS microstructure and superior fracture toughness of YSZ.

  20. Postprocessing annealing effects on direct current and microwave performance of AlGaN /GaN high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Lee, Jaesun; Liu, Dongmin; Kim, Hyeongnam; Lu, Wu

    2004-09-01

    The effects of postprocessing annealing on direct current, radio frequency small signal, and power performances of AlGaN /GaN high electron mobility transistors with a gate-length of 0.2μm were investigated. The postannealing technique can improve the device performance, especially, after 10min postannealing at 400°C, the gate-to-drain breakdown voltage of devices exhibits remarkable improvement from 25 to 187V. The maximum extrinsic transconductance increases from 223 to 233mS/mm at a drain bias of 10V after 10min annealing at 400°C. The maximum drain current at a gate bias of 1V increases from 823 to 956mA/mm. After annealing, the values of the unity current gain cut-off frequency and the maximum oscillation frequency increases from 24 and 80GHz to 55 and 150GHz, respectively. The output power and gain at 10GHz were improved from 16.4dBm and 11.4dB to 25.9dBm and 19dB, respectively.

  1. Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction

    NASA Astrophysics Data System (ADS)

    Mori, Kazuki; Takeda, Kunihiro; Kusafuka, Toshiki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

    2016-05-01

    We investigated a V-based electrode for the realization of low ohmic-contact resistivity in n-type AlGaN with a high AlN molar fraction characterized by the circular transmission line model. The contact resistivity of n-type Al0.62Ga0.38N prepared using the V/Al/Ni/Au electrode reached 1.13 × 10-6 Ω cm2. Using this electrode, we also demonstrated the fabrication of UV light-emitting diodes (LEDs) with an emission wavelength of approximately 300 nm. An operating voltage of LED prepared using a V/Al/Ni/Au electrode was 1.6 V lower at 100 mA current injection than that prepared using a Ti/Al/Ti/Au electrode, with a specific contact resistance of approximately 2.36 × 10-4 Ω cm2 for n-type Al0.62Ga0.38N.

  2. A double barrier memristive device

    PubMed Central

    Hansen, M.; Ziegler, M.; Kolberg, L.; Soni, R.; Dirkmann, S.; Mussenbrock, T.; Kohlstedt, H.

    2015-01-01

    We present a quantum mechanical memristive Nb/Al/Al2O3/NbxOy/Au device which consists of an ultra-thin memristive layer (NbxOy) sandwiched between an Al2O3 tunnel barrier and a Schottky-like contact. A highly uniform current distribution for the LRS (low resistance state) and HRS (high resistance state) for areas ranging between 70 μm2 and 2300 μm2 were obtained, which indicates a non-filamentary based resistive switching mechanism. In a detailed experimental and theoretical analysis we show evidence that resistive switching originates from oxygen diffusion and modifications of the local electronic interface states within the NbxOy layer, which influences the interface properties of the Au (Schottky) contact and of the Al2O3 tunneling barrier, respectively. The presented device might offer several benefits like an intrinsic current compliance, improved retention and no need for an electric forming procedure, which is especially attractive for possible applications in highly dense random access memories or neuromorphic mixed signal circuits. PMID:26348823

  3. Barriers to screening mammography.

    PubMed

    Sarma, Elizabeth A

    2015-01-01

    Breast cancer (BRCA) is the second most commonly diagnosed cancer among women in the USA, and mammography is an effective means for the early detection of BRCA. Identifying the barriers to screening mammography can inform research, policy and practice aiming to increase mammography adherence. A literature review was conducted to determine common barriers to screening mammography adherence. PsycINFO and PubMed databases were searched to identify studies published between 2000 and 2012 that examined barriers associated with reduced mammography adherence. Three thematic groups of barriers, based on social ecology, were identified from the literature: healthcare system-level, social and individual-level barriers. Researchers must consider screening behaviour in context and, therefore, should simultaneously consider each level of barriers when attempting to understand screening behaviour and create interventions to increase mammography adherence.

  4. Permanent isolation surface barrier development plan

    SciTech Connect

    Wing, N.R.

    1994-01-01

    The exhumation and treatment of wastes may not always be the preferred alternative in the remediation of a waste site. In-place disposal alternatives, under certain circumstances, may be the most desirable alternatives to use in the protection of human health and the environment. The implementation of an in-place disposal alternative will likely require some type of protective covering that will provide long-term isolation of the wastes from the accessible environment. Even if the wastes are exhumed and treated, a long-term barrier may still be needed to adequately dispose of the treated wastes or any remaining waste residuals. Currently, no {open_quotes}proven{close_quotes} long-term barrier is available. The Hanford Site Permanent Isolation Surface Barrier Development Program (BDP) was organized to develop the technology needed to provide a long-term surface barrier capability for the Hanford Site. The permanent isolation barrier technology also could be used at other sites. Permanent isolation barriers use engineered layers of natural materials to create an integrated structure with redundant protective features. Drawings of conceptual permanent isolation surface barriers are shown. The natural construction materials (e.g., fine soil, sand, gravel, riprap, asphalt) have been selected to optimize barrier performance and longevity. The objective of current designs is to use natural materials to develop a maintenance-free permanent isolation surface barrier that isolates wastes for a minimum of 1,000 years by limiting water drainage to near-zero amounts; reducing the likelihood of plant, animal, and human intrusion; controlling the exhalation of noxious gases; and minimizing erosion-related problems.

  5. Surface stability test plan for protective barriers

    SciTech Connect

    Ligotke, M.W.

    1989-01-01

    Natural-material protective barriers for long-term isolation of buried waste have been identified as integral components of a plan to isolate a number of Hanford defense waste sites. Standards currently being developed for internal and external barrier performance will mandate a barrier surface layer that is resistant to the eolian erosion processes of wind erosion (deflation) and windborne particle deposition (formation of sand dunes). Thus, experiments are needed to measure rates of eolian erosion processes impacting those surfaces under different surface and climatological conditions. Data from these studies will provide information for use in the evaluation of selected surface layers as a means of providing stable cover over waste sites throughout the design life span of protective barriers. The multi-year test plan described in this plan is directed at understanding processes of wind erosion and windborne particle deposition, providing measurements of erosion rates for models, and suggesting construction materials and methods for reducing the effect of long-term eolian erosion on the barrier. Specifically, this plan describes possible methods to measure rates of eolian erosion, including field and laboratory procedure. Advantages and disadvantages of laboratory (wind tunnel) tests are discussed, and continued wind tunnel tests are recommended for wind erosion studies. A comparison between field and wind tunnel erosive forces is discussed. Plans for testing surfaces are described. Guidance is also presented for studying the processes controlling sand dune and blowout formation. 24 refs., 7 figs., 3 tabs.

  6. Thermal barrier coating system with intermetallic overlay bond coat

    SciTech Connect

    Duderstadt, E.C.; Nagaraj, B A.

    1993-08-24

    A superalloy article is described having a thermal barrier coating system thereon, comprising: a substrate made of a material selected from the group consisting of a nickel-based superalloy and a cobalt-based superalloy; and a thermal barrier coating system on the substrate, the thermal barrier coating system including an intermetallic bond coat overlying the substrate, the bond coat being selected from the group consisting of a nickel aluminide and a platinum aluminide intermetallic compound, a thermally grown aluminum oxide layer overlying the intermetallic bond coat, and a ceramic topcoat overlying the aluminum oxide layer.

  7. Planar varactor frequency multiplier devices with blocking barrier

    NASA Technical Reports Server (NTRS)

    Lieneweg, Udo (Inventor); Frerking, Margaret A. (Inventor); Maserjian, Joseph (Inventor)

    1994-01-01

    The invention relates to planar varactor frequency multiplier devices with a heterojunction blocking barrier for near millimeter wave radiation of moderate power from a fundamental input wave. The space charge limitation of the submillimeter frequency multiplier devices of the BIN(sup +) type is overcome by a diode structure comprising an n(sup +) doped layer of semiconductor material functioning as a low resistance back contact, a layer of semiconductor material with n-type doping functioning as a drift region grown on the back contact layer, a delta doping sheet forming a positive charge at the interface of the drift region layer with a barrier layer, and a surface metal contact. The layers thus formed on an n(sup +) doped layer may be divided into two isolated back-to-back BNN(sup +) diodes by separately depositing two surface metal contacts. By repeating the sequence of the drift region layer and the barrier layer with the delta doping sheet at the interfaces between the drift and barrier layers, a plurality of stacked diodes is formed. The novelty of the invention resides in providing n-type semiconductor material for the drift region in a GaAs/AlGaAs structure, and in stacking a plurality of such BNN(sup +) diodes stacked for greater output power with and connected back-to-back with the n(sup +) GaAs layer as an internal back contact and separate metal contact over an AlGaAs barrier layer on top of each stack.

  8. Electrical insulator assembly with oxygen permeation barrier

    DOEpatents

    Van Der Beck, R.R.; Bond, J.A.

    1994-03-29

    A high-voltage electrical insulator for electrically insulating a thermoelectric module in a spacecraft from a niobium-1% zirconium alloy wall of a heat exchanger filled with liquid lithium while providing good thermal conductivity between the heat exchanger and the thermoelectric module. The insulator has a single crystal alumina layer (SxAl[sub 2]O[sub 3], sapphire) with a niobium foil layer bonded thereto on the surface of the alumina crystal facing the heat exchanger wall, and a molybdenum layer bonded to the niobium layer to act as an oxygen permeation barrier to preclude the oxygen depleting effects of the lithium from causing undesirable niobium-aluminum intermetallic layers near the alumina-niobium interface. 3 figures.

  9. Electrical insulator assembly with oxygen permeation barrier

    DOEpatents

    Van Der Beck, Roland R.; Bond, James A.

    1994-01-01

    A high-voltage electrical insulator (21) for electrically insulating a thermoelectric module (17) in a spacecraft from a niobium-1% zirconium alloy wall (11) of a heat exchanger (13) filled with liquid lithium (16) while providing good thermal conductivity between the heat exchanger and the thermoelectric module. The insulator (21) has a single crystal alumina layer (SxAl.sub.2 O.sub.3, sapphire) with a niobium foil layer (32) bonded thereto on the surface of the alumina crystal (26) facing the heat exchanger wall (11), and a molybdenum layer (31) bonded to the niobium layer (32) to act as an oxygen permeation barrier to preclude the oxygen depleting effects of the lithium from causing undesirable niobium-aluminum intermetallic layers near the alumina-niobium interface.

  10. Biointrusion test plan for the Permanent Isolation Surface Barrier Prototype

    SciTech Connect

    Link, S.O.; Cadwell, L.L.; Brandt, C.A.; Downs, J.L.; Rossi, R.E.; Gee, G.W.

    1994-04-01

    This document provides a testing and monitoring plan for the biological component of the prototype barrier slated for construction at the Hanford Site. The prototype barrier is an aboveground structure engineered to demonstrate the basic features of an earthen cover system. It is designed to permanently isolate waste from the biosphere. The features of the barrier include multiple layers of soil and rock materials and a low-permeability asphalt sublayer. The surface of the barrier consists of silt loam soil, covered with plants. The barrier sides are reinforced with rock or coarse earthen-fill to protect against wind and water erosion. The sublayers inhibit plant and animal intrusion and percolation of water. A series of tests will be conducted on the prototype barrier over the next several years to evaluate barrier performance under extreme climatic conditions. Plants and animals will play a significant role in the hydrologic and water and wind erosion characteristics of the prototype barrier. Studies on the biological component of the prototype barrier will include work on the initial revegetation of the surface, continued monitoring of the developing plant community, rooting depth and dispersion in the context of biointrusion potential, the role of plants in the hydrology of the surface and toe regions of the barrier, the role of plants in stabilizing the surface against water and wind erosion, and the role of burrowing animals in the hydrology and water and wind erosion of the barrier.

  11. Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1- x(001) and SixGe1- x(110).

    PubMed

    Edmonds, Mary; Sardashti, Kasra; Wolf, Steven; Chagarov, Evgueni; Clemons, Max; Kent, Tyler; Park, Jun Hong; Tang, Kechao; McIntyre, Paul C; Yoshida, Naomi; Dong, Lin; Holmes, Russell; Alvarez, Daniel; Kummel, Andrew C

    2017-02-07

    Atomic layer deposition of a silicon rich SiNx layer on Si0.7Ge0.3(001), Si0.5Ge0.5(001), and Si0.5Ge0.5(110) surfaces has been achieved by sequential pulsing of Si2Cl6 and N2H4 precursors at a substrate temperature of 285 °C. XPS spectra show a higher binding energy shoulder peak on Si 2p indicative of SiOxNyClz bonding while Ge 2p and Ge 3d peaks show only a small amount of higher binding energy components consistent with only interfacial bonds, indicating the growth of SiOxNy on the SiGe surface with negligible subsurface reactions. Scanning tunneling spectroscopy measurements confirm that the SiNx interfacial layer forms an electrically passive surface on p-type Si0.70Ge0.30(001), Si0.50Ge0.50(110), and Si0.50Ge0.50(001) substrates as the surface Fermi level is unpinned and the electronic structure is free of states in the band gap. DFT calculations show that a Si rich a-SiO0.4N0,4 interlayer can produce lower interfacial defect density than stoichiometric a-SiO0.8N0.8, substoichiometric a-Si3N2, or stoichiometric a-Si3N4 interlayers by minimizing strain and bond breaking in the SiGe by the interlayer. Metal-oxide-semiconductor capacitors devices were fabricated on p-type Si0.7Ge0.3(001) and Si0.5Ge0.5(001) substrates with and without the insertion of an ALD SiOxNy interfacial layer, and the SiOxNy layer resulted in a decrease in interface state density near midgap with a comparable Cmax value.

  12. Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1- x(001) and SixGe1- x(110)

    NASA Astrophysics Data System (ADS)

    Edmonds, Mary; Sardashti, Kasra; Wolf, Steven; Chagarov, Evgueni; Clemons, Max; Kent, Tyler; Park, Jun Hong; Tang, Kechao; McIntyre, Paul C.; Yoshida, Naomi; Dong, Lin; Holmes, Russell; Alvarez, Daniel; Kummel, Andrew C.

    2017-02-01

    Atomic layer deposition of a silicon rich SiNx layer on Si0.7Ge0.3(001), Si0.5Ge0.5(001), and Si0.5Ge0.5(110) surfaces has been achieved by sequential pulsing of Si2Cl6 and N2H4 precursors at a substrate temperature of 285 °C. XPS spectra show a higher binding energy shoulder peak on Si 2p indicative of SiOxNyClz bonding while Ge 2p and Ge 3d peaks show only a small amount of higher binding energy components consistent with only interfacial bonds, indicating the growth of SiOxNy on the SiGe surface with negligible subsurface reactions. Scanning tunneling spectroscopy measurements confirm that the SiNx interfacial layer forms an electrically passive surface on p-type Si0.70Ge0.30(001), Si0.50Ge0.50(110), and Si0.50Ge0.50(001) substrates as the surface Fermi level is unpinned and the electronic structure is free of states in the band gap. DFT calculations show that a Si rich a-SiO0.4N0,4 interlayer can produce lower interfacial defect density than stoichiometric a-SiO0.8N0.8, substoichiometric a-Si3N2, or stoichiometric a-Si3N4 interlayers by minimizing strain and bond breaking in the SiGe by the interlayer. Metal-oxide-semiconductor capacitors devices were fabricated on p-type Si0.7Ge0.3(001) and Si0.5Ge0.5(001) substrates with and without the insertion of an ALD SiOxNy interfacial layer, and the SiOxNy layer resulted in a decrease in interface state density near midgap with a comparable Cmax value.

  13. New electrode-barrier structures for high density ferroelectric memories

    NASA Astrophysics Data System (ADS)

    Vedula, R.; Desu, C. S.; Tirumala, S.; Bhatt, H. D.; Desu, S. B.; Lee, K. B.

    2001-03-01

    In this paper, two electrode-barrier structures based on Pt-Rh and Pt-Ir alloys and their oxides are proposed for high-density ferroelectric memory applications. These electrode-barriers are multi-layered, comprising a diffusion barrier (PtRhOx or PtIrOx), metal alloy (PtRh or PtIr) and another PtRhOx or PtIrOx layer for fatigue reduction in the case of PZT capacitors. Both lead zirconate titanate (PZT) and strontium bismuth tantalate (SBT) capacitors based on the electrode-barriers were used in the present study. The electrode-barrier structure acts as a conducting electrode as well as an excellent diffusion barrier for lead, bismuth, oxygen and silicon. The PZT test capacitors fabricated on these electrode-barriers showed excellent fatigue resistance with other ferroelectric properties being similar to those on Pt. Also, these electrode-barriers are stable, and remain conductive even up to the processing temperatures of SBT (750 °C). This makes direct integration of both PZT and SBT capacitors on to a poly-Si plug attainable. In addition, the conducting electrode-barrier structures can be deposited in situ, directly over n+polycrystalline Si, thereby significantly improving the density of the device.

  14. MgGa2O4 spinel barrier for magnetic tunnel junctions: Coherent tunneling and low barrier height

    NASA Astrophysics Data System (ADS)

    Sukegawa, Hiroaki; Kato, Yushi; Belmoubarik, Mohamed; Cheng, P.-H.; Daibou, Tadaomi; Shimomura, Naoharu; Kamiguchi, Yuuzo; Ito, Junichi; Yoda, Hiroaki; Ohkubo, Tadakatsu; Mitani, Seiji; Hono, Kazuhiro

    2017-03-01

    Epitaxial Fe/magnesium gallium spinel oxide (MgGa2O4)/Fe(001) magnetic tunnel junctions (MTJs) were fabricated by magnetron sputtering. A tunnel magnetoresistance (TMR) ratio up to 121% at room temperature (196% at 4 K) was observed, suggesting a TMR enhancement by the coherent tunneling effect in the MgGa2O4 barrier. The MgGa2O4 layer had a spinel structure and it showed good lattice matching with the Fe layers owing to slight tetragonal lattice distortion of MgGa2O4. Barrier thickness dependence of the tunneling resistance and current-voltage characteristics revealed that the height of the MgGa2O4 barrier is much lower than that of an MgAl2O4 barrier. This study demonstrates the potential of Ga-based spinel oxides for MTJ barriers having a large TMR ratio at a low resistance area product.

  15. Transforming Education: Overcoming Barriers.

    ERIC Educational Resources Information Center

    David, Jane L.; Goren, Paul D.

    Barriers to progress in educational reform exist inside and outside the education system. Some arise where new practices encounter traditional expectations and boundaries, but others go much deeper than education, such as poverty, racism, local political conflicts, and human resistance to change. The following five categories of barriers are…

  16. OVERCOMING CULTURAL BARRIERS.

    ERIC Educational Resources Information Center

    BARRUTIA, RICHARD

    THE RELATIONSHIP OF LANGUAGE DEVELOPMENT TO CULTURAL BARRIERS AND THE TEACHING OF FOREIGN LANGUAGES IS DISCUSSED IN THIS ARTICLE. VARIOUS VIEWS OF THE MEANING OF CULTURE ARE MENTIONED IN ORDER TO SINGLE OUT ANTHROPOLOGICAL CULTURE AS A MAIN FOCAL POINT. INTERCULTURAL DIFFERENCES ARE SPELLED OUT WITH EXAMPLES OF LINGUISTIC BARRIERS, AND…

  17. Liquid metal hydrogen barriers

    DOEpatents

    Grover, George M.; Frank, Thurman G.; Keddy, Edward S.

    1976-01-01

    Hydrogen barriers which comprise liquid metals in which the solubility of hydrogen is low and which have good thermal conductivities at operating temperatures of interest. Such barriers are useful in nuclear fuel elements containing a metal hydride moderator which has a substantial hydrogen dissociation pressure at reactor operating temperatures.

  18. Advantages of AlGaN-based deep ultraviolet light-emitting diodes with a superlattice electron blocking layer

    NASA Astrophysics Data System (ADS)

    Sun, Pai; Bao, Xianglong; Liu, Songqing; Ye, Chunya; Yuan, Zhaorong; Wu, Yukun; Li, Shuping; Kang, Junyong

    2015-09-01

    The properties of 298 nm AlGaN based deep ultraviolet light-emitting diodes (UV LEDs) with different Al mole compositions in the conventional electron blocking layer (EBL) are discussed in this paper, the optimal Al mole composition of the conventional EBL is identified at 0.8. The improved structure with an AlGaN/AlGaN superlattice (SL) electron blocking layer (EBL) was then investigated numerically. The electrical and optical properties, band diagrams, carrier concentrations, radiative recombination rates and internal quantum efficiency (IQE) were investigated by APSYS software, and results show that the deep UV LED with superlattice EBL performed much better than the conventional EBL deep UV LED, attributed to reduced electrons leakage and increased holes injection.

  19. Enhancing the performance of blue GaN-based light emitting diodes with double electron blocking layers

    SciTech Connect

    Guo, Yao; Liang, Meng; Fu, Jiajia; Liu, Zhiqiang E-mail: lzq@semi.ac.cn; Yi, Xiaoyan E-mail: lzq@semi.ac.cn; Wang, Junxi; Wang, Guohong; Li, Jinmin

    2015-03-15

    In this work, novel double Electron Blocking Layers for InGaN/GaN multiple quantum wells light-emitting diodes were proposed to mitigate the efficiency droop at high current density. The band diagram and carriers distributions were investigated numerically. The results indicate that due to a newly formed holes stack in the p-GaN near the active region, the hole injection has been improved and an uniform carriers distribution can be achieved. As a result, in our new structure with double Electron Blocking Layers, the efficiency droop has been reduced to 15.5 % in comparison with 57.3 % for the LED with AlGaN EBL at the current density of 100 A/cm{sup 2}.

  20. Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission

    SciTech Connect

    Young, Erin C.; Wu Feng; Haeger, Daniel A.; Nakamura, Shuji; Denbaars, Steven P.; Cohen, Daniel A.; Speck, James S.; Romanov, Alexey E.

    2012-10-01

    In this Letter, we report on the growth and properties of relaxed, compositionally graded Al{sub x}Ga{sub 1-x}N buffer layers on freestanding semipolar (2021) GaN substrates. Continuous and step compositional grades with Al concentrations up to x = 0.61 have been achieved, with emission wavelengths in the mid-ultraviolet region as low as 265 nm. Coherency stresses were relaxed progressively throughout the grades by misfit dislocation generation via primary (basal) slip and secondary (non-basal) slip systems. Threading dislocation densities in the final layers of the grades were less than 10{sup 6}/cm{sup 2} as confirmed by plan-view transmission electron microscopy and cathodoluminescence studies.

  1. Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier

    DOEpatents

    Carlson, David E.; Wronski, Christopher R.

    1979-01-01

    A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.

  2. High voltage, high current Schottky barrier solar cell

    NASA Technical Reports Server (NTRS)

    Stirn, R. J. (Inventor)

    1977-01-01

    A Schottky barrier solar cell was described, which consists of a layer of wide band gap semiconductor material on which a very thin film of semitransparent metal was deposited to form a Schottky barrier. The layer of the wide band gap semiconductor material is on top of a layer of narrower band gap semiconductor material, to which one of the cell's contacts may be attached directly or through a substrate. The cell's other contact is a grid structure which is deposited on the thin metal film.

  3. GaAs Schottky barrier photo-responsive device and method of fabrication

    NASA Technical Reports Server (NTRS)

    Alcorn, G. E.; Leinkram, C. Z.; Okunola, O. (Inventor)

    1985-01-01

    A gallium arsenide photo-responsive device is provided with an intermediate, transparent layer of a refractory metal or alkaline earth metal forming a tenacious bond between a non-hydroscopic oxide layer and a noble metal Schottky barrier layer. The device has a gallium arsenide substrate with a predetermined type conductivity and a gallium arsenide epitaxial layer with the same type conductivity but a lower charge carrier concentration grown on the substrate. The oxide layer is formed to cover the epitaxial layer, and the transparent metal layer followed by the noble metal layer are deposited upon the oxide layer. An interdigitated ohmic contact is then formed upon the noble metal layer.

  4. Controlled Thermal Expansion Coat for Thermal Barrier Coatings

    NASA Technical Reports Server (NTRS)

    Brindley, William J. (Inventor); Miller, Robert A. (Inventor); Aikin, Beverly J. M. (Inventor)

    1999-01-01

    A improved thermal barrier coating and method for producing and applying such is disclosed herein. The thermal barrier coating includes a high temperature substrate, a first bond coat layer applied to the substrate of MCrAlX, and a second bond coat layer of MCrAlX with particles of a particulate dispersed throughout the MCrAlX and the preferred particulate is Al2O3. The particles of the particulate dispersed throughout the second bond coat layer preferably have a diameter of less then the height of the peaks of the second bond coat layer, or a diameter of less than 5 microns. The method of producing the second bond coat layer may either include the steps of mechanical alloying of particles throughout the second bond coat layer, attrition milling the particles of the particulate throughout the second bond coat layer, or using electrophoresis to disperse the particles throughout the second bond coat layer. In the preferred embodiment of the invention, the first bond coat layer is applied to the substrate, and then the second bond coat layer is thermally sprayed onto the first bond coat layer. Further, in a preferred embodiment of die invention, a ceramic insulating layer covers the second bond coat layer.

  5. Retractable barrier strip

    DOEpatents

    Marts, Donna J.; Barker, Stacey G.; Wowczuk, Andrew; Vellenoweth, Thomas E.

    2002-01-01

    A portable barrier strip having retractable tire-puncture spikes for puncturing a vehicle tire. The tire-puncture spikes have an armed position for puncturing a tire and a retracted position for not puncturing a tire. The strip comprises a plurality of barrier blocks having the tire-puncture spikes removably disposed in a shaft that is rotatably disposed in each barrier block. The plurality of barrier blocks hare hingedly interconnected by complementary hinges integrally formed into the side of each barrier block which allow the strip to be rolled for easy storage and retrieval, but which prevent irregular or back bending of the strip. The shafts of adjacent barrier blocks are pivotally interconnected via a double hinged universal joint to accommodate irregularities in a roadway surface and to transmit torsional motion of the shaft from block to block. A single flexshaft cable is connected to the shaft of an end block to allow a user to selectively cause the shafts of a plurality of adjacently connected barrier blocks to rotate the tire-puncture spikes to the armed position for puncturing a vehicle tire, and to the retracted position for not puncturing the tire. The flexshaft is provided with a resiliently biased retracting mechanism, and a release latch for allowing the spikes to be quickly retracted after the intended vehicle tire is punctured.

  6. Vehicle barrier systems

    SciTech Connect

    Sena, P.A.

    1986-01-01

    The ground vehicle is one of the most effective tools available to an adversary force. Vehicles can be used to penetrate many types of perimeter barriers, transport equipment and personnel rapidly over long distances, and deliver large amounts of explosives directly to facilities in suicide missions. The function of a vehicle barrier system is to detain or disable a defined threat vehicle at a selected distance from a protected facility. Numerous facilities are installing, or planning to install, vehicle barrier systems and many of these facilities are requesting guidance to do so adequately. Therefore, vehicle barriers are being evaluated to determine their stopping capabilities so that systems can be designed that are both balanced and capable of providing a desired degree of protection. Equally important, many of the considerations that should be taken into account when establishing a vehicle barrier system have been identified. These considerations which pertain to site preparation, barrier selection, system integration and operation, and vehicle/barrier interaction, are discussed in this paper. 2 tabs.

  7. Vehicle barrier systems

    SciTech Connect

    Sena, P.A.

    1986-01-01

    The ground vehicle is one of the most effective tools available to an adversary force. Vehicles can be used to penetrate many types of perimeter barriers, transport equipment, and personnel rapidly over long distances, and deliver large amounts of explosives directly to facilities in suicide missions. The function of a vehicle barrier system is to detain or disable a defined threat vehicle at a selected distance from a protected facility. Numerous facilities are installing, or planning to install, vehicle barrier systems and many of these facilities are requesting guidance to do so adequately. Therefore, vehicle barriers are being evaluated to determine their stopping capabilities so that systems can be designed that are both balanced and capable of providing a desired degree of protection. Equally important, many of the considerations that should be taken into account when establishing a vehicle barrier system have been identified. These considerations which pertain to site preparation, barrier selection, system integration and operation, and vehicle/barrier interaction, are discussed in this paper.

  8. Vehicle barrier systems

    SciTech Connect

    Sena, P.A.

    1986-01-01

    The ground vehicle is one of the most effective tools available to an adversary force. Vehicles can be used to penetrate many types of perimeter barriers, transport equipment and personnel rapidly over long distances, and deliver large amounts of explosives directly to facilities in suicide missions. The function of a vehicle barrier system is to detain or disable a defined threat vehicle at a selected distance from a protected facility. Numerous facilities are installing, or planning to install, vehicle barrier systems and many of these facilities are requesting guidance to do so adequately. Therefore, vehicle barriers are being evaluated to determine their stopping capabilities so that systems can be designed that are both balanced and capable of providing a desired degree of protection. Equally important, many of the considerations that should be taken into account when establishing a vehicle barrier system have been identified. These considerations which pertain to site preparation, barrier selection, system integration and operation, and vehicle/barrier interaction, are discussed in this paper.

  9. High-Quality Crystal Growth and Characteristics of AlGaN-Based Solar-Blind Distributed Bragg Reflectors with a Tri-layer Period Structure.

    PubMed

    Chang, Jianjun; Chen, Dunjun; Yang, Lianhong; Liu, Yanli; Dong, Kexiu; Lu, Hai; Zhang, Rong; Zheng, Youdou

    2016-07-06

    To realize AlGaN-based solar-blind ultraviolet distributed Bragg reflectors (DBRs), a novel tri-layer AlGaN/AlInN/AlInGaN periodical structure that differs from the traditional periodically alternating layers of high- and low-refractive-index materials was proposed and grown on an Al0.5Ga0.5N template via metal-organic chemical vapour deposition. Because of the intentional design of the AlInGaN strain transition layer, a state-of-the-art DBR structure with atomic-level-flatness interfaces was achieved using an AlGaN template. The fabricated DBR exhibits a peak reflectivity of 86% at the centre wavelength of 274 nm and a stopband with a full-width at half-maximum of 16 nm.

  10. High-Quality Crystal Growth and Characteristics of AlGaN-Based Solar-Blind Distributed Bragg Reflectors with a Tri-layer Period Structure

    NASA Astrophysics Data System (ADS)

    Chang, Jianjun; Chen, Dunjun; Yang, Lianhong; Liu, Yanli; Dong, Kexiu; Lu, Hai; Zhang, Rong; Zheng, Youdou

    2016-07-01

    To realize AlGaN-based solar-blind ultraviolet distributed Bragg reflectors (DBRs), a novel tri-layer AlGaN/AlInN/AlInGaN periodical structure that differs from the traditional periodically alternating layers of high- and low-refractive-index materials was proposed and grown on an Al0.5Ga0.5N template via metal-organic chemical vapour deposition. Because of the intentional design of the AlInGaN strain transition layer, a state-of-the-art DBR structure with atomic-level-flatness interfaces was achieved using an AlGaN template. The fabricated DBR exhibits a peak reflectivity of 86% at the centre wavelength of 274 nm and a stopband with a full-width at half-maximum of 16 nm.

  11. High-Quality Crystal Growth and Characteristics of AlGaN-Based Solar-Blind Distributed Bragg Reflectors with a Tri-layer Period Structure

    PubMed Central

    Chang, Jianjun; Chen, Dunjun; Yang, Lianhong; Liu, Yanli; Dong, Kexiu; Lu, Hai; Zhang, Rong; Zheng, Youdou

    2016-01-01

    To realize AlGaN-based solar-blind ultraviolet distributed Bragg reflectors (DBRs), a novel tri-layer AlGaN/AlInN/AlInGaN periodical structure that differs from the traditional periodically alternating layers of high- and low-refractive-index materials was proposed and grown on an Al0.5Ga0.5N template via metal-organic chemical vapour deposition. Because of the intentional design of the AlInGaN strain transition layer, a state-of-the-art DBR structure with atomic-level-flatness interfaces was achieved using an AlGaN template. The fabricated DBR exhibits a peak reflectivity of 86% at the centre wavelength of 274 nm and a stopband with a full-width at half-maximum of 16 nm. PMID:27381651

  12. Counseling for barrier methods.

    PubMed

    Guest, F

    1979-08-01

    Despite the less serious risks of barrier methods (diaphragm, condom, foam, and other vaginal spermicides) compared with other contraceptive methods, many family planning programs find that only a minority of patients accept barrier methods as primary contraceptive choices. Some misconceptions patients have about barrier methods are: 1) they are less effective compared to oral contraceptives or IUDs, 2) foam kills sperm that are still inside a man's body, and 3) you need a prescription to use a barrier method. This article provides the following information about barrier methods to use in counseling patients: 1) couples who use barriers exactly right all the time can achieve high levels of effectiveness; average effectiveness rates for longterm users are 87% for the diaphragm, 90% for condoms, and 85% for foam; 2) noncontraceptive benefits include protection against sexually transmitted infections; barrier methods are nonhormonal and nonsurgical and posters to that effect are recommended for the counselor's waiting room; 3) patients need to be encouraged to use barrier methods even though they are less convenient in certain situations; support groups could improve patients' success; 4) counselors may be able to help users by giving them permission not to use the method on certain cycle days as a tradeoff for diligent use at other times thereby relieving the contraceptive burden; 5) recurring problems that patients should be warned about include waiting too late to put on a condom, running out of foam, using too little cream with the diaphragm, and douching after intercourse; and 6) improper care and storage problems which could cause failure are storing latex near heat, separating the foam bottle from the applicator, using old condoms and diaphragms, and suppositories that fail to melt. Patients' 2 biggest complaints about vaginal suppositories are messiness and irritation and switching to condoms can help. The last page of the article is a one page handout for

  13. Recycler barrier RF buckets

    SciTech Connect

    Bhat, C.M.; /Fermilab

    2011-03-01

    The Recycler Ring at Fermilab uses a barrier rf systems for all of its rf manipulations. In this paper, I will give an overview of historical perspective on barrier rf system, the longitudinal beam dynamics issues, aspects of rf linearization to produce long flat bunches and methods used for emittance measurements of the beam in the RR barrier rf buckets. Current rf manipulation schemes used for antiproton beam stacking and longitudinal momentum mining of the RR beam for the Tevatron collider operation are explained along with their importance in spectacular success of the Tevatron luminosity performance.

  14. High aluminium content and high growth rates of AlGaN in a close-coupled showerhead MOVPE reactor

    NASA Astrophysics Data System (ADS)

    Stellmach, J.; Pristovsek, M.; Savaş, Ö.; Schlegel, J.; Yakovlev, E. V.; Kneissl, M.

    2011-01-01

    The growth rates and aluminium contents of Al xGa 1- xN layers grown in a close-coupled showerhead reactor were investigated as a function of growth pressure and chamber height during metal-organic vapour phase epitaxy. The data show strong non-linear dependencies due to nanoparticle formation in the gas-phase. Good agreement between the experimental data and modeling results is obtained when the contribution of both Ga- and Al-containing species to the gas-phase particle formation is considered.

  15. Gut barrier in health and disease: focus on childhood.

    PubMed

    Viggiano, D; Ianiro, G; Vanella, G; Bibbò, S; Bruno, G; Simeone, G; Mele, G

    2015-01-01

    The gut barrier is a functional unit, organized as a multi-layer system, made up of two main components: a physical barrier surface, which prevents bacterial adhesion and regulates paracellular diffusion to the host tissues, and a deep functional barrier, that is able to discriminate between pathogens and commensal microorganisms, organizing the immune tolerance and the immune response to pathogens. Other mechanisms, such as gastric juice and pancreatic enzymes (which both have antibacterial properties) participate in the luminal integrity of the gut barrier. From the outer layer to the inner layer, the physical barrier is composed of gut microbiota (that competes with pathogens to gain space and energy resources, processes the molecules necessary to mucosal integrity and modulates the immunological activity of deep barrier), mucus (which separates the intraluminal content from more internal layers and contains antimicrobial products and secretory IgA), epithelial cells (which form a physical and immunological barrier) and the innate and adaptive immune cells forming the gut-associated lymphoid tissue (which is responsible for antigen sampling and immune responses). Disruption of the gut barrier has been associated with many gastrointestinal diseases, but also with extra-intestinal pathological condition, such as type 1 diabetes mellitus, allergic diseases or autism spectrum disorders. The maintenance of a healthy intestinal barrier is therefore of paramount importance in children, for both health and economic reasons. Many drugs or compounds used in the treatment of gastrointestinal disorders act through the restoration of a normal intestinal permeability. Several studies have highlighted the role of probiotics in the modulation and reduction of intestinal permeability, considering the strong influence of gut microbiota in the modulation of the function and structure of gut barrier, but also on the immune response of the host. To date, available weapons for the

  16. The role of plants on isolation barrier systems

    SciTech Connect

    Link, S.O.; Downs, J.L.; Waugh, W.J.

    1994-11-01

    Surface barriers are used to isolate buried wastes from the environment. Most have been built for short-term isolation. The need to isolate radioactive wastes from the environment requires that the functional integrity of a barrier be maintained for thousands of years. Barrier function strongly depends on vegetation. Plants reduce wind and water erosion and minimize drainage, but may transport contaminants if roots extend into buried wastes. Our review of the function of plants on surface barriers focuses on the role of plants across mesic to arid environments and gives special consideration to studies done at Hanford. The Hanford Barrier Development Program was created to design and test an earthen cover system to inhibit water infiltration, plant and animal intrusion, and wind and water erosion, while isolating buried wastes for at least 1000 years. Studies at the Hanford have shown that plants will significantly interact with the barrier. Plants transpire soil water back into the atmosphere. Deep-rooted perennials best recycle water; soil water may drain through the root zone of shallow-rooted annuals. Lysimeter studies indicate that a surface layer of fine soil with deep-rooted plants precludes drainage even with three times normal precipitation. The presence of vegetation greatly reduces water and wind erosion, but deep-rooted plants pose a threat of biointrusion and contaminant transport. The Hanford barrier includes a buried rock layer and asphalt layer to prevent biointrusion.

  17. Breakdown and Protection of ALD Moisture Barrier Thin Films.

    PubMed

    Nehm, Frederik; Klumbies, Hannes; Richter, Claudia; Singh, Aarti; Schroeder, Uwe; Mikolajick, Thomas; Mönch, Tobias; Hoßbach, Christoph; Albert, Matthias; Bartha, Johann W; Leo, Karl; Müller-Meskamp, Lars

    2015-10-14

    The water vapor barrier properties of low-temperature atomic layer deposited (ALD) AlOx thin-films are observed to be unstable if exposed directly to high or even ambient relative humidities. Upon exposure to humid atmospheres, their apparent barrier breaks down and their water vapor transmission rates (WVTR), measured by electrical calcium tests, deteriorate by several orders of magnitude. These changes are accompanied by surface roughening beyond the original thickness, observed by atomic force microscopy. X-ray reflectivity investigations show a strong decrease in density caused by only 5 min storage in a 38 °C, 90% relative humidity climate. We show that barrier stabilities required for device applications can be achieved by protection layers which prevent the direct contact of water condensing on the surface, i.e., the sensitive ALD barrier. Nine different protection layers of either ALD materials or polymers are tested on the barriers. Although ALD materials prove to be ineffective, applied polymers seem to provide good protection independent of thickness, surface free energy, and deposition technique. A glued-on PET foil stands out as a low-cost, easily processed, and especially stable solution. This way, 20 nm single layer ALD barriers for organic electronics are measured. They yield reliable WVTRs down to 2×10(-5) g(H2O) m(-2) day(-1) at 38 °C and 90% relative humidity, highlighting the great potential of ALD encapsulation.

  18. Thermal barrier coating having high phase stability

    DOEpatents

    Subramanian, Ramesh

    2002-01-01

    A device (10) comprising a substrate (22) having a deposited ceramic thermal barrier coating characterized by a microstructure having gaps (28) where the thermal barrier coating comprises a first thermal barrier layer (40), and a second thermal barrier layer (30) with a pyrochlore crystal structure having a chemical formula of A.sup.n+.sub.2-x B.sup.m+.sub.2+x O.sub.7-y, where A is selected from the group of elements consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and mixtures thereof, where B is selected from the group of elements consisting of Zr, Hf, Ti and mixtures thereof, where n and m are the valence of A and B respectively, and for -0.5.ltoreq.x.ltoreq.0.5, ##EQU1## and excluding the following combinations for x=0, y=0: A=La and B=Zr; A=La and B=Hf; A=Gd and B=Hf; and A=Yb and B=Ti.

  19. Pressure Study of Photoluminescence in GaN/InGaN/ AlGaN Quantum Wells

    NASA Astrophysics Data System (ADS)

    Perlin, Piotr; Iota, V.; Weinstein, B. A.; Wisniewski, P.; Osinski, M.; Eliseev, P. G.

    1997-03-01

    We have studied the photoluminescence (PL) from two commercial high brightness single quantum well light emitting diodes (Nichia Chem. Industs.) with In_xGa_1-x N (x=0.45 and 0.2) as the active layers under hydrostatic pressures up to 7 GPa. These diodes are the best existing light emitters at short wavelengths, having the emission wavelengths of 430 nm and 530 nm depending on the content of indium in the 30 Åthick quantum wells. Although these devices show a remarkable quality and efficiency (luminosity as high as 12 cd), the mechanism of recombination remains obscure. We discovered that the pressure coefficient for each of the observed PL peaks is dramatically (2-3 times) lower than that of the energy gap of its InGaN active layer. These observations, in conjunction with the fact that the observed emission occurs below the energy gap of the quantum well material, and also considering the anomalous temperature behavior of the emission (peak energy increasing with temperature) suggest the involvement of localized states and exclude a simple band-to-band recombination picture. These localized states may be tentatively attributed to the presence of band tails in the gap which stem from composition fluctuations in the InGaN alloy. (figures)

  20. Optimistic barrier synchronization

    NASA Technical Reports Server (NTRS)

    Nicol, David M.

    1992-01-01

    Barrier synchronization is fundamental operation in parallel computation. In many contexts, at the point a processor enters a barrier it knows that it has already processed all the work required of it prior to synchronization. The alternative case, when a processor cannot enter a barrier with the assurance that it has already performed all the necessary pre-synchronization computation, is treated. The problem arises when the number of pre-sychronization messages to be received by a processor is unkown, for example, in a parallel discrete simulation or any other computation that is largely driven by an unpredictable exchange of messages. We describe an optimistic O(log sup 2 P) barrier algorithm for such problems, study its performance on a large-scale parallel system, and consider extensions to general associative reductions as well as associative parallel prefix computations.