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Sample records for algan buffer layer

  1. Growth and characterization of graded AlGaN conducting buffer layers on n + SiC substrates

    NASA Astrophysics Data System (ADS)

    Moran, B.; Hansen, M.; Craven, M. D.; Speck, J. S.; DenBaars, S. P.

    2000-12-01

    GaN films on top of doped, graded AlGaN conducting buffer layers were grown by metal-organic chemical vapor deposition on n + SiC substrates. The effect of initial AlGaN composition and buffer layer doping level on the structural and morphological properties of these films and the conduction between these films and the substrate was investigated. A minimum resistance of 2 Ω was measured for vertical test structures.

  2. Methods for improved growth of group III nitride buffer layers

    DOEpatents

    Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

    2014-07-15

    Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

  3. Characterization of AlGaN epitaxial layer

    NASA Astrophysics Data System (ADS)

    Parasuraman, Usha; Srinivasan, Sridhar; Ponce, Fernando; Rong, Liu; Abigail, Bell; Mei, Justin; Tanaka, S.

    2003-10-01

    Accurate aluminum compositions have been determined for AlxGa1-xN alloys whose rough compositions vary between 0AlGaN layer. TEM pictures showed the absence of misfit dislocations in the basal plane which indicated that the AlGaN layer was indeed under pseudomorphic growth. This study allows us to conclude that RBS is not a suitable technique for estimating the composition in the case of light elements such as Al. Cathodoluminescence was done to determine the band gap and the bowing parameter was calculated for the composition range 0

  4. Strain modification of AlGaN layers using swift heavy ions

    NASA Astrophysics Data System (ADS)

    Sathish, N.; Pathak, A. P.; Dhamodaran, S.; Sundaravel, B.; Nair, K. G. M.; Khan, S. A.; Avasthi, D. K.; Bazzan, M.; Trave, E.; Mazzoldi, P.

    2011-11-01

    Epitaxial AlGaN/GaN layers grown by molecular beam epitaxy (MBE) on SiC substrates were irradiated with 150 MeV Ag ions at a fluence of 5×1012 ions/cm2. The samples used in this study are 50 nm Al0.2Ga0.8N/1 nm AlN/1 μ m GaN/0.1 μ m AlN grown on SI 4H-SiC. Rutherford backscattering spectrometry/channeling strain measurements were carried out on off-normal axis of irradiated and unirradiated samples. In an as-grown sample, AlGaN layer is partially relaxed with a small tensile strain. After irradiation, this strain increases by 0.22% in AlGaN layer. Incident ion energy dependence of dechanneling parameter shows E 1/2 dependence, which corresponds to the dislocations. Defect densities were calculated from the E 1/2 graph. As a result of irradiation, the defect density increased on both GaN and AlGaN layers. The effect of irradiation induced-damages are analyzed as a function of material properties. Observed results from different characterization techniques such as RBS/channeling, high-resolution XRD and AFM are compared and complemented with each other to deduce the information. Possible mechanisms responsible for the observations have been discussed in detail.

  5. Effect of surface pretreatment on interfacial chemical bonding states of atomic layer deposited ZrO{sub 2} on AlGaN

    SciTech Connect

    Ye, Gang; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Ang, Kian Siong; Wang, Hong; Liu, Zhi Hong

    2015-09-15

    Atomic layer deposition (ALD) of ZrO{sub 2} on native oxide covered (untreated) and buffered oxide etchant (BOE) treated AlGaN surface was analyzed by utilizing x-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy. Evidenced by Ga–O and Al–O chemical bonds by XPS, parasitic oxidation during deposition is largely enhanced on BOE treated AlGaN surface. Due to the high reactivity of Al atoms, more prominent oxidation of Al atoms is observed, which leads to thicker interfacial layer formed on BOE treated surface. The results suggest that native oxide on AlGaN surface may serve as a protecting layer to inhibit the surface from further parasitic oxidation during ALD. The findings provide important process guidelines for the use of ALD ZrO{sub 2} and its pre-ALD surface treatments for high-k AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors and other related device applications.

  6. New Al0.25Ga0.75N/GaN high electron mobility transistor with partial etched AlGaN layer

    NASA Astrophysics Data System (ADS)

    Yuan, Song; Duan, Baoxing; Yuan, Xiaoning; Cao, Zhen; Guo, Haijun; Yang, Yintang

    2016-05-01

    In this letter, a new Al0.25Ga0.75N/GaN high electron mobility transistor (HEMT) with the AlGaN layer is partial etched is reported for the first time. The two-dimensional electron gas (2DEG) density in the HEMTs is changed by partially etching the AlGaN layer. A new electric field peak is introduced along the interface between the AlGaN layer and the GaN buffer by the electric field modulation effect. The high electric field near the gate in the proposed Al0.25Ga0.75N/GaN HEMT is effectively decreased, which makes the surface electric field more uniform. Compared with the conventional structure, the breakdown voltage can be improved by 58% for the proposed Al0.25Ga0.75N/GaN HEMT and the current collapse can be reduced resulting from the more uniform surface electric field.

  7. Doped LZO buffer layers for laminated conductors

    DOEpatents

    Paranthaman, Mariappan Parans [Knoxville, TN; Schoop, Urs [Westborough, MA; Goyal, Amit [Knoxville, TN; Thieme, Cornelis Leo Hans [Westborough, MA; Verebelyi, Darren T [Oxford, MA; Rupich, Martin W [Framingham, MA

    2010-03-23

    A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the substrate, the biaxially textured buffer layer comprising LZO and a dopant for mitigating metal diffusion through the LZO, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.

  8. Buffer layer for thin film structures

    DOEpatents

    Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

    2010-06-15

    A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

  9. Buffer layer for thin film structures

    DOEpatents

    Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

    2006-10-31

    A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

  10. Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high-electron-mobility transistors

    NASA Astrophysics Data System (ADS)

    Takei, Yusuke; Tsutsui, Kazuo; Saito, Wataru; Kakushima, Kuniyuki; Wakabayashi, Hitoshi; Iwai, Hiroshi

    2016-04-01

    The dependence of ohmic contact resistance on the AlGaN layer thickness was evaluated for AlGaN/GaN high-electron-mobility transistor (HEMT) structures. Mo/Al/Ti contacts were formed on AlGaN layers with various thicknesses. The observed resistance characteristics are discussed on the basis of a model in which the overall contact resistance is composed of a series of three resistance components. Different dependences on the AlGaN layer thickness was observed after annealing at low temperatures (800-850 °C) and at high temperatures (900-950 °C). It was determined that lowering the resistance at the metal/AlGaN interface and that of the AlGaN layer is important for obtaining low-resistance ohmic contacts.

  11. Impedance analysis of nano thickness layered AlGaN acoustic sensor deposited by thermionic vacuum arc

    NASA Astrophysics Data System (ADS)

    Özen, Soner; Bilgiç, Eyüp; Gülmez, Gülay; Şenay, Volkan; Pat, Suat; Korkmaz, Şadan; Mohammadigharehbagh, Reza

    2016-03-01

    In this study, AlGaN acoustic sensor was deposited on aluminum metal substrate by thermionic vacuum arc (TVA) method for the first time. Gallium materials are used in many applications for optoelectronic device and semiconductor technology. Thermionic vacuum arc is the deposition technology for the variously materials and applications field. The thickness of the acoustic sensor is in deposited as nano layer. Impedance analyses were realized. Also, TVA production parameters and some properties of the deposited layers were investigated. TVA is a fast deposition technology for the gallium compounds and doped gallium compounds. Obtained results show that AlGaN materials are very promising materials. Moreover, these acoustic sensors have been produced by TVA technology.

  12. Composition dependent valence band order in c-oriented wurtzite AlGaN layers

    SciTech Connect

    Neuschl, B. Helbing, J.; Knab, M.; Lauer, H.; Madel, M.; Thonke, K.; Feneberg, M.

    2014-09-21

    The valence band order of polar wurtzite aluminum gallium nitride (AlGaN) layers is analyzed for a dense series of samples, grown heteroepitaxially on sapphire substrates, covering the complete composition range. The excitonic transition energies, found by temperature dependent photoluminescence (PL) spectroscopy, were corrected to the unstrained state using input from X-ray diffraction. k∙p theory yields a critical relative aluminum concentration x{sub c}=(0.09±0.05) for the crossing of the uppermost two valence bands for strain free material, shifting to higher values for compressively strained samples, as supported by polarization dependent PL. The analysis of the strain dependent valence band crossing reconciles the findings of other research groups, where sample strain was neglected. We found a bowing for the energy band gap to the valence band with Γ₉ symmetry of b{sub Γ₉}=0.85eV, and propose a possible bowing for the crystal field energy of b{sub cf}=-0.12eV. A comparison of the light extraction efficiency perpendicular and parallel to the c axis of Al{sub x}Ga{sub 1-x}N/Al{sub y}Ga{sub 1-y}N quantum well structures is discussed for different compositions.

  13. From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: Role of the AlGaN layer microstructure

    SciTech Connect

    Fisichella, G.; Greco, G.; Roccaforte, F.; Giannazzo, F.

    2014-08-11

    The electrical behaviour of graphene (Gr) contacts to Al{sub x}Ga{sub 1−x}N/GaN heterostructures has been investigated, focusing, in particular, on the impact of the AlGaN microstructure on the current transport at Gr/AlGaN interface. Two Al{sub 0.25}Ga{sub 0.75}N/GaN heterostructures with very different quality in terms of surface roughness and defectivity, as evaluated by atomic force microscopy (AFM) and transmission electron microscopy, were compared in this study, i.e., a uniform and defect-free sample and a sample with a high density of typical V-defects, which locally cause a reduction of the AlGaN thickness. Nanoscale resolution current voltage (I-V) measurements by an Au coated conductive AFM tip were carried out at several positions both on the bare and Gr-coated AlGaN surfaces. Rectifying contacts were found onto both bare AlGaN surfaces, but with a more inhomogeneous and lower Schottky barrier height (Φ{sub B} ≈ 0.6 eV) for AlGaN with V-defects, with respect to the case of the uniform AlGaN (Φ{sub B} ≈ 0.9 eV). Instead, very different electrical behaviours were observed in the presence of the Gr interlayer between the Au tip and AlGaN, i.e., a Schottky contact with reduced barrier height (Φ{sub B} ≈ 0.4 eV) for the uniform AlGaN and an Ohmic contact for the AlGaN with V-defects. Interestingly, excellent lateral uniformity of the local I-V characteristics was found in both cases and can be ascribed to an averaging effect of the Gr electrode over the AlGaN interfacial inhomogeneities. Due to the locally reduced AlGaN layer thickness, V defect act as preferential current paths from Gr to the 2DEG and can account for the peculiar Ohmic behaviour of Gr contacts on defective AlGaN.

  14. Buffer layers on biaxially textured metal substrates

    DOEpatents

    Shoup, Shara S.; Paranthamam, Mariappan; Beach, David B.; Kroeger, Donald M.; Goyal, Amit

    2001-01-01

    A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing electronically active materials thereon.

  15. Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission

    SciTech Connect

    Young, Erin C.; Wu Feng; Haeger, Daniel A.; Nakamura, Shuji; Denbaars, Steven P.; Cohen, Daniel A.; Speck, James S.; Romanov, Alexey E.

    2012-10-01

    In this Letter, we report on the growth and properties of relaxed, compositionally graded Al{sub x}Ga{sub 1-x}N buffer layers on freestanding semipolar (2021) GaN substrates. Continuous and step compositional grades with Al concentrations up to x = 0.61 have been achieved, with emission wavelengths in the mid-ultraviolet region as low as 265 nm. Coherency stresses were relaxed progressively throughout the grades by misfit dislocation generation via primary (basal) slip and secondary (non-basal) slip systems. Threading dislocation densities in the final layers of the grades were less than 10{sup 6}/cm{sup 2} as confirmed by plan-view transmission electron microscopy and cathodoluminescence studies.

  16. Monitoring and Controlling of Strain During MOCVD of AlGaN for UV Optoelectronics

    SciTech Connect

    Han, J.; Crawford, M.H.; Shul, R.J.; Hearne, S.J.; Chason, E.; Figiel, J.J.; Banas, M.

    1999-01-14

    The grown-in tensile strain, due to a lattice mismatch between AlGaN and GaN, is responsible for the observed cracking that seriously limits the feasibility of nitride-based ultraviolet (UV) emitters. We report in-situ monitoring of strain/stress during MOCVD of AlGaN based on a wafer-curvature measurement technique. The strain/stress measurement confirms the presence of tensile strain during growth of AlGaN pseudomorphically on a thick GaN layer. Further growth leads to the onset of stress relief through crack generation. We find that the growth of AlGaN directly on low-temperature (LT) GaN or AlN buffer layers results in a reduced and possibly controllable strain.

  17. Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm

    NASA Astrophysics Data System (ADS)

    Li, X.; Le Gac, G.; Bouchoule, S.; El Gmili, Y.; Patriarche, G.; Sundaram, S.; Disseix, P.; Réveret, F.; Leymarie, J.; Streque, J.; Genty, F.; Salvestrini, J.-P.; Dupuis, R. D.; Li, X.-H.; Voss, P. L.; Ougazzaden, A.

    2015-12-01

    10-period Al0.57Ga0.43N/Al0.38Ga0.62N multi-quantum wells (MQWs) were grown on a relaxed Al0.58Ga0.42N buffer on AlN templates on sapphire. The threading dislocations and V-pits were characterized and their origin is discussed. The influence of V-pits on the structural quality of the MQWs and on optical emission at 280 nm was analyzed. It was observed that near-surface V-pits were always associated with grain boundaries consisting of edge threading dislocations originating from the AlN/Al2O3 interface. Although the high density of V-pits disrupted MQWs growth, it did not affect the internal quantum efficiency which was measured to be ~1% at room temperature even when V-pit density was increased from 7×107 cm-2 to 2×109 cm-2. The results help to understand the origin, propagation and influences of the typical defects in AlGaN MQWs grown on AlN/Al2O3 templates which may lead to further improvement of the performance of DUV devices.

  18. Influence of AlN thickness on AlGaN epilayer grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Jayasakthi, M.; Juillaguet, S.; Peyre, H.; Konczewicz, L.; Baskar, K.; Contreras, S.

    2016-10-01

    AlGaN/AlN layers were grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. The AlN buffer thickness was varied from 400 nm to 800 nm. The AlGaN layer thickness was 1000 nm. The crystalline quality, thickness and composition of AlGaN were determined using high resolution X-ray diffraction (HRXRD). The threading dislocation density (TDD) was found to decrease with increase of AlN layer thickness. Reciprocal space mapping (RSM) was used to estimate the strain and relaxation between AlGaN and AlN. The optical properties of AlGaN layers were investigated by temperature dependent photoluminescence (PL). PL intensities of AlGaN layers increases with increasing the AlN thickness. The surface morphology of AlGaN was studied by atomic force microscopy (AFM). Root mean square (RMS) roughness values were found to be decreased while increase of AlN thickness.

  19. Effects of Si-doping on structural, electrical, and optical properties of polar and non-polar AlGaN epi-layers

    NASA Astrophysics Data System (ADS)

    Yang, Hongquan; Zhang, Xiong; Wang, Shuchang; Wang, Yi; Luan, Huakai; Dai, Qian; Wu, Zili; Zhao, Jianguo; Cui, Yiping

    2016-08-01

    The polar (0001)-oriented c-plane and non-polar (11 2 bar 0) -oriented a-plane wurtzite AlGaN epi-layers were successfully grown on polar (0001)-oriented c-plane and semi-polar (1 1 bar 02) -oriented r-plane sapphire substrates, respectively with various Si-doping levels in a low pressure metal organic chemical vapor deposition (MOCVD) system. The morphological, structural, electrical, and optical properties of the polar and non-polar AlGaN epi-layers were studied with scanning electron microscopy (SEM), X-ray diffraction (XRD), Hall effect, and Raman spectroscopy. The characterization results show that Si dopants incorporated into the polar and non-polar AlGaN films induced a relaxation of compressive residual strain and a generation of biaxial tensile strain on the surface in consequence of the dislocation climbing. In particular, it was found that the Si-induced compressive strain relaxation in the non-polar AlGaN samples can be promoted by the structural anisotropy as compared with the polar counterparts. The gradually increased relaxation of compressive residual strain in both polar and non-polar AlGaN samples with increasing Si-doping level was attributed to the Si-induced enhancement in the opportunity for the dislocations to interact and annihilate. This implies that the crystal quality for both polar and non-polar AlGaN epi-layers can be remarkably improved by Si-doping.

  20. Buffer layers and articles for electronic devices

    DOEpatents

    Paranthaman, Mariappan P.; Aytug, Tolga; Christen, David K.; Feenstra, Roeland; Goyal, Amit

    2004-07-20

    Materials for depositing buffer layers on biaxially textured and untextured metallic and metal oxide substrates for use in the manufacture of superconducting and other electronic articles comprise RMnO.sub.3, R.sub.1-x A.sub.x MnO.sub.3, and combinations thereof; wherein R includes an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A includes an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra.

  1. Back contact buffer layer for thin-film solar cells

    DOEpatents

    Compaan, Alvin D.; Plotnikov, Victor V.

    2014-09-09

    A photovoltaic cell structure is disclosed that includes a buffer/passivation layer at a CdTe/Back contact interface. The buffer/passivation layer is formed from the same material that forms the n-type semiconductor active layer. In one embodiment, the buffer layer and the n-type semiconductor active layer are formed from cadmium sulfide (CdS). A method of forming a photovoltaic cell includes the step of forming the semiconductor active layers and the buffer/passivation layer within the same deposition chamber and using the same material source.

  2. Dislocation blocking by AlGaN hot electron injecting layer in the epitaxial growth of GaN terahertz Gunn diode

    NASA Astrophysics Data System (ADS)

    Li, Liang; Yang, Lin'an; Zhang, Jincheng; Hao, Yue

    2013-09-01

    This paper reports an efficient method to improve the crystal quality of GaN Gunn diode with AlGaN hot electron injecting layer (HEI). An evident reduction of screw dislocation and edge dislocation densities is achieved by the strain management and the enhanced lateral growth in high temperature grown AlGaN HEI layer. Compared with the top hot electron injecting layer (THEI) structure, the bottom hot electron injecting layer (BHEI) structure enhances the crystal quality of transit region due to the growth sequence modulation of HEI layer. A high Hall mobility of 2934 cm2/Vs at 77 K, a nearly flat downtrend of Hall mobility at the temperature ranging from 300 to 573 K, a low intensity of ratio of yellow luminescence band to band edge emission, a narrow band edge emission line-width, and a smooth surface morphology are observed for the BHEI structural epitaxy of Gunn diode, which indicates that AlGaN BHEI structure is a promising candidate for fabrication of GaN Gunn diodes in terahertz regime.

  3. Temperature and doping dependent changes in surface recombination during UV illumination of (Al)GaN bulk layers

    NASA Astrophysics Data System (ADS)

    Netzel, Carsten; Jeschke, Jörg; Brunner, Frank; Knauer, Arne; Weyers, Markus

    2016-09-01

    We have studied the effect of continuous illumination with above band gap energy on the emission intensity of polar (Al)GaN bulk layers during the photoluminescence experiments. A temporal change in emission intensity on time scales from seconds to hours is based on the modification of the semiconductor surface states and the surface recombination by the incident light. The temporal behavior of the photoluminescence intensity varies with the parameters such as ambient atmosphere, pretreatment of the surface, doping density, threading dislocation density, excitation power density, and sample temperature. By means of temperature-dependent photoluminescence measurements, we observed that at least two different processes at the semiconductor surface affect the non-radiative surface recombination during illumination. The first process leads to an irreversible decrease in photoluminescence intensity and is dominant around room temperature, and the second process leads to a delayed increase in intensity and becomes dominant around T = 150-200 K. Both processes become slower when the sample temperature decreases from room temperature. They cease for T < 150 K. Stable photoluminescence intensity at arbitrary sample temperature was obtained by passivating the analyzed layer with an epitaxially grown AlN cap layer.

  4. Buffer layers for REBCO films for use in superconducting devices

    SciTech Connect

    Goyal, Amit; Wee, Sung-Hun

    2014-06-10

    A superconducting article includes a substrate having a biaxially textured surface. A biaxially textured buffer layer, which can be a cap layer, is supported by the substrate. The buffer layer includes a double perovskite of the formula A.sub.2B'B''O.sub.6, where A is rare earth or alkaline earth metal and B' and B'' are different transition metal cations. A biaxially textured superconductor layer is deposited so as to be supported by the buffer layer. A method of making a superconducting article is also disclosed.

  5. Buffer layers on metal alloy substrates for superconducting tapes

    DOEpatents

    Jia, Quanxi; Foltyn, Stephen R.; Arendt, Paul N.; Groves, James R.

    2004-10-05

    An article including a substrate, at least one intermediate layer upon the surface of the substrate, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the at least one intermediate layer, and a layer of a SrRuO.sub.3 buffer material upon the oriented cubic oxide material layer is provided together with additional layers such as a HTS top-layer of YBCO directly upon the layer of a SrRuO.sub.3 buffer material layer. With a HTS top-layer of YBCO upon at least one layer of the SrRuO.sub.3 buffer material in such an article, J.sub.c 's of up to 1.3.times.10.sup.6 A/cm.sup.2 have been demonstrated with projected I.sub.c 's of over 200 Amperes across a sample 1 cm wide.

  6. Current isolating epitaxial buffer layers for high voltage photodiode array

    DOEpatents

    Morse, Jeffrey D.; Cooper, Gregory A.

    2002-01-01

    An array of photodiodes in series on a common semi-insulating substrate has a non-conductive buffer layer between the photodiodes and the semi-insulating substrate. The buffer layer reduces current injection leakage between the photodiodes of the array and allows optical energy to be converted to high voltage electrical energy.

  7. Growth of III-V nitrides and buffer layer investigation by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Huang, Tzu-Fang

    1999-11-01

    III-V nitrides have been investigated intensively due to the enormous interest in optoelectronic device applications in the green, blue, violet, and near-ultraviolet regions. Advances in III-V nitride materials for short wavelength light sources will lead to both a revolution in optical disk storage, as higher densities can be achieved with short wavelengths, and a major impact on imaging and graphic technology as high quality red, green, and blue light-emitting diodes (LED) and lasers become available. High quality GaN films have mostly been prepared by metal-organic vapor phase epitaxy (MOCVD), molecular beam epitaxy (MBE) and vapor phase epitaxy (VPE). Compared to these techniques, pulsed laser deposition (PLD) is a relatively new growth technique used widely for the growth of oxide thin films. However, several advantages of PLD make it worthy of study as a method of growing nitrides. The congruent ablation achieved with short UV-laser pulses allows deposition of a multicomponent material by employing a single target and the ability for depositing a wide variety of materials. This advantage makes PLD very suitable for growing multilayer structures sequentially in the same chamber and investigating the effect of buffer layers. Moreover, the strong nonequilibrium growth conditions of PLD may lead to different nucleation and growth processes. In this work, GaN and (Al,Ga)N films have been epitaxially grown on (0001) sapphire substrate by PLD, which has been successfully applied to controlling the lattice constant and band gap of (Al,Ga)N. Room-temperature photoluminescence of PLD-GaN exhibits a strong band edge emission at 3.4eV. The threading dislocations of GaN are predominantly screw dislocations with Burgers vector of <0001> while edge dislocations with Burgers vector of 1/3<11-20> are the dominant ones in GaN grown by MBE, MOCVD and VPE. This variation observed in defect characteristics may come from the difference in nucleation and growth kinetics between PLD

  8. Mitigation of substrate defects in reticles using multilayer buffer layers

    DOEpatents

    Mirkarimi, Paul B.; Bajt, Sasa; Stearns, Daniel G.

    2001-01-01

    A multilayer film is used as a buffer layer to minimize the size of defects on a reticle substrate prior to deposition of a reflective coating on the substrate. The multilayer buffer layer deposited intermediate the reticle substrate and the reflective coating produces a smoothing of small particles and other defects on the reticle substrate. The reduction in defect size is controlled by surface relaxation during the buffer layer growth process and by the degree of intermixing and volume contraction of the materials at the multilayer interfaces. The buffer layers are deposited at near-normal incidence via a low particulate ion beam sputtering process. The growth surface of the buffer layer may also be heated by a secondary ion source to increase the degree of intermixing and improve the mitigation of defects.

  9. Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO{sub 2} grown by atomic layer deposition

    SciTech Connect

    Ye, Gang; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Ang, Kian Siong; Wang, Hong; Liu, Zhi Hong

    2015-03-02

    The effect of post-deposition annealing on chemical bonding states at interface between Al{sub 0.5}Ga{sub 0.5}N and ZrO{sub 2} grown by atomic layer deposition (ALD) is studied by angle-resolved x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. It has been found that both of Al-O/Al 2p and Ga-O/Ga 3d area ratio decrease at annealing temperatures lower than 500 °C, which could be attributed to “clean up” effect of ALD-ZrO{sub 2} on AlGaN. Compared to Ga spectra, a much larger decrease in Al-O/Al 2p ratio at a smaller take-off angle θ is observed, which indicates higher effectiveness of the passivation of Al-O bond than Ga-O bond through “clean up” effect near the interface. However, degradation of ZrO{sub 2}/AlGaN interface quality due to re-oxidation at higher annealing temperature (>500 °C) is also found. The XPS spectra clearly reveal that Al atoms at ZrO{sub 2}/AlGaN interface are easier to get oxidized as compared with Ga atoms.

  10. On buffer layers as non-reflecting computational boundaries

    NASA Technical Reports Server (NTRS)

    Hayder, M. Ehtesham; Turkel, Eli L.

    1996-01-01

    We examine an absorbing buffer layer technique for use as a non-reflecting boundary condition in the numerical simulation of flows. One such formulation was by Ta'asan and Nark for the linearized Euler equations. They modified the flow inside the buffer zone to artificially make it supersonic in the layer. We examine how this approach can be extended to the nonlinear Euler equations. We consider both a conservative and a non-conservative form modifying the governing equations in the buffer layer. We compare this with the case that the governing equations in the layer are the same as in the interior domain. We test the effectiveness of these buffer layers by a simulation of an excited axisymmetric jet based on a nonlinear compressible Navier-Stokes equations.

  11. Buffer layers for high-Tc thin films on sapphire

    NASA Technical Reports Server (NTRS)

    Wu, X. D.; Foltyn, S. R.; Muenchausen, R. E.; Cooke, D. W.; Pique, A.; Kalokitis, D.; Pendrick, V.; Belohoubek, E.

    1992-01-01

    Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.

  12. Enhanced adhesion for LIGA microfabrication by using a buffer layer

    DOEpatents

    Bajikar, Sateesh S.; De Carlo, Francesco; Song, Joshua J.

    2001-01-01

    The present invention is an improvement on the LIGA microfabrication process wherein a buffer layer is applied to the upper or working surface of a substrate prior to the placement of a resist onto the surface of the substrate. The buffer layer is made from an inert low-Z material (low atomic weight), a material that absorbs secondary X-rays emissions from the substrate that are generated from the substrate upon exposure to a primary X-rays source. Suitable materials for the buffer layer include polyamides and polyimide. The preferred polyimide is synthesized form pyromellitic anhydride and oxydianiline (PMDA-ODA).

  13. Enhanced adhesion for LIGA microfabrication by using a buffer layer

    DOEpatents

    Bajikar, Sateesh S.; De Carlo, Francesco; Song, Joshua J.

    2004-01-27

    The present invention is an improvement on the LIGA microfabrication process wherein a buffer layer is applied to the upper or working surface of a substrate prior to the placement of a resist onto the surface of the substrate. The buffer layer is made from an inert low-Z material (low atomic weight), a material that absorbs secondary X-rays emissions from the substrate that are generated from the substrate upon exposure to a primary X-rays source. Suitable materials for the buffer layer include polyamides and polyimide. The preferred polyimide is synthesized form pyromellitic anhydride and oxydianiline (PMDA-ODA).

  14. Buffer layer effect on ZnO nanorods growth alignment

    NASA Astrophysics Data System (ADS)

    Zhao, Dongxu; Andreazza, Caroline; Andreazza, Pascal; Ma, Jiangang; Liu, Yichun; Shen, Dezhen

    2005-06-01

    Vertical aligned ZnO nanorods array was fabricated on Si with introducing a ZnO thin film as a buffer layer. Two different nucleation mechanisms were found in growth process. With using Au catalyst, Zn vapor could diffuse into Au nanoclusters with forming a solid solution. Then the ZnO nucleation site is mainly on the catalyst by oxidation of Au/Zn alloy. Without catalyst, nucleation could occur directly on the surface of buffer layer by homoepitaxy. The density and the size of ZnO nanorods could be governed by morphological character of catalyst and buffer layer. The nanorods growth is followed by vapor-solid mechanism.

  15. Rare earth zirconium oxide buffer layers on metal substrates

    DOEpatents

    Williams, Robert K.; Paranthaman, Mariappan; Chirayil, Thomas G.; Lee, Dominic F.; Goyal, Amit; Feenstra, Roeland

    2001-01-01

    A laminate article comprises a substrate and a biaxially textured (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer over the substrate, wherein 0buffer layer can be deposited using sol-gel or metal-organic decomposition. The laminate article can include a layer of YBCO over the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer. A layer of CeO.sub.2 between the YBCO layer and the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer can also be include. Further included can be a layer of YSZ between the CeO.sub.2 layer and the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer. The substrate can be a biaxially textured metal, such as nickel. A method of forming the laminate article is also disclosed.

  16. Method of depositing buffer layers on biaxially textured metal substrates

    DOEpatents

    Beach, David B.; Morrell, Jonathan S.; Paranthaman, Mariappan; Chirayil, Thomas; Specht, Eliot D.; Goyal, Amit

    2002-08-27

    A laminate article comprises a substrate and a biaxially textured (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer over the substrate, wherein 0buffer layer can be deposited using sol-gel or metal-organic decomposition. The laminate article can include a layer of YBCO over the (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer. A layer of CeO.sub.2 between the YBCO layer and the (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer can also be include. Further included can be a layer of YSZ between the CeO.sub.2 layer and the (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer. The substrate can be a biaxially textured metal, such as nickel. A method of forming the laminate article is also disclosed.

  17. Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

    SciTech Connect

    Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Le, Lingcong; Hwang, Ya-Hsi; Kim, Byung-Jae; Ren, Fan; Pearton, Stephen J.; Lind, Aaron G.; Jones, Kevin S.; Kravchenko, I. I.; Zhang, Ming-Lan

    2015-04-21

    Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 109 and 5 × 108 cm₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, there was no dispersion observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.

  18. Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

    DOE PAGES

    Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Le, Lingcong; Hwang, Ya-Hsi; Kim, Byung-Jae; Ren, Fan; Pearton, Stephen J.; Lind, Aaron G.; Jones, Kevin S.; et al

    2015-04-21

    Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 109 and 5 × 108 cm₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, there was no dispersionmore » observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.« less

  19. Buffer layers on metal alloy substrates for superconducting tapes

    DOEpatents

    Jia, Quanxi; Foltyn, Stephen R.; Arendt, Paul N.; Groves, James R.

    2004-06-29

    An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer, and a layer of a SrRuO.sub.3 buffer material upon the oriented cubic oxide material layer is provided together with additional layers such as a HTS top-layer of YBCO directly upon the layer of a SrRuO.sub.3 buffer material layer. With a HTS top-layer of YBCO upon at least one layer of the SrRuO.sub.3 buffer material in such an article, J.sub.c 's of up to 1.3.times.10.sup.6 A/cm.sup.2 have been demonstrated with projected IC's of over 200 Amperes across a sample 1 cm wide.

  20. Improved characteristics of ultraviolet AlGaN multiple-quantum-well laser diodes with step-graded quantum barriers close to waveguide layers

    NASA Astrophysics Data System (ADS)

    Cai, Xuefen; Li, Shuping; Kang, Junyong

    2016-09-01

    Ultraviolet AlGaN multiple-quantum-well laser diodes (LDs) with step-graded quantum barriers (QBs) instead of conventional first and last QBs close to waveguide layers are proposed. The characteristics of this type of laser diodes are numerically investigated by using the software PICS3D and it is found that the performances of these LDs are greatly improved. The results indicates that the structure with step-graded QBs exhibits higher output light power, slope efficiency and emission intensity, as well as lower series resistance and threshold current density under the identical condition, compared with conventional LD structure.

  1. Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer.

    PubMed

    Lin, Bing-Chen; Chen, Kuo-Ju; Wang, Chao-Hsun; Chiu, Ching-Hsueh; Lan, Yu-Pin; Lin, Chien-Chung; Lee, Po-Tsung; Shih, Min-Hsiung; Kuo, Yen-Kuang; Kuo, Hao-Chung

    2014-01-13

    A tapered AlGaN electron blocking layer with step-graded aluminum composition is analyzed in nitride-based blue light-emitting diode (LED) numerically and experimentally. The energy band diagrams, electrostatic fields, carrier concentration, electron current density profiles, and hole transmitting probability are investigated. The simulation results demonstrated that such tapered structure can effectively enhance the hole injection efficiency as well as the electron confinement. Consequently, the LED with a tapered EBL grown by metal-organic chemical vapor deposition exhibits reduced efficiency droop behavior of 29% as compared with 44% for original LED, which reflects the improvement in hole injection and electron overflow in our design.

  2. Digitally Alloyed Modulated Precursor Flow Epitaxial Growth of Ternary AlGaN with Binary AlN and GaN Sub-Layers and Observation of Compositional Inhomogeneity

    NASA Astrophysics Data System (ADS)

    Kim, Hee Jin; Choi, Suk; Yoo, Dongwon; Ryou, Jae-Hyun; Hawkridge, Michael E.; Liliental-Weber, Zuzanna; Dupuis, Russell D.

    2010-05-01

    We report the growth of ternary aluminum gallium nitride (AlGaN) layers on AlN/sapphire template/substrates by digitally alloyed modulated precursor flow epitaxial growth (DA-MPEG), which combined an MPEG AlN sub-layer with a conventional metalorganic chemical vapor deposition (MOCVD)-grown GaN sub-layer. The overall composition in DA-MPEG Al x Ga1- x N was controlled by adjustment of the growth time (i.e., the thickness) of the GaN sub-layer. As the GaN sub-layer growth time increased, the Al composition in AlGaN decreased to 50%, but the surface morphology of the AlGaN layer became rough, and a three-dimensional structure with islands appeared for the DA-MPEG AlGaN with relatively thick GaN sub-layers, possibly resulting from the Ga adatom surface migration behavior and/or the strain built up from lattice mismatch between AlN and GaN sub-layers with increasing GaN sub-layer growth time. Through strain analysis by high-resolution x-ray diffraction, reciprocal space mapping, and scanning transmission electron microscopy, it was found that there was compositional inhomogeneity in the DA-MPEG AlGaN with AlN and GaN binary sub-layers for the case of the layer with relatively thick GaN sub-layers.

  3. High luminous efficacy green light-emitting diodes with AlGaN cap layer.

    PubMed

    Alhassan, Abdullah I; Farrell, Robert M; Saifaddin, Burhan; Mughal, Asad; Wu, Feng; DenBaars, Steven P; Nakamura, Shuji; Speck, James S

    2016-08-01

    We demonstrate very high luminous efficacy green light-emitting diodes employing Al0.30Ga0.70N cap layer grown on patterned sapphire substrates by metal organic chemical vapor deposition. The peak external quantum efficiency and luminous efficacies were 44.3% and 239 lm/w, respectively. At 20 mA (20 A/cm2) the light output power was 14.3 mW, the forward voltage was 3.5 V, the emission wavelength was 526.6 nm, and the external quantum efficiency was 30.2%. These results are among the highest reported luminous efficacy values for InGaN based green light-emitting diodes.

  4. Inhomogeneous distribution of defect-related emission in Si-doped AlGaN epitaxial layers with different Al content and Si concentration

    SciTech Connect

    Kurai, Satoshi Ushijima, Fumitaka; Yamada, Yoichi; Miyake, Hideto; Hiramatsu, Kazumasa

    2014-02-07

    The spatial distribution of luminescence in Si-doped AlGaN epitaxial layers that differ in Al content and Si concentration has been studied by cathodoluminescence (CL) mapping in combination with scanning electron microscopy. The density of surface hillocks increased with decreasing Al content and with increasing Si concentration. The mechanisms giving rise to those hillocks are likely different. The hillocks induced surface roughening, and the compositional fluctuation and local donor-acceptor-pair (DAP) emission at hillock edges in AlGaN epitaxial layers were enhanced irrespective of the origin of the hillocks. The intensity of local DAP emission was related to Si concentration, as well as to hillock density. CL observation revealed that DAP emission areas were present inside the samples and were likely related to dislocations concentrated at hillock edges. Possible candidates for acceptors in the observed DAP emission that are closely related in terms of both Si concentration and hillock edges with large deformations are a V{sub III}-Si{sub III} complex and Si{sub N}, which are unfavorable in ordinary III-nitrides.

  5. Conductive and robust nitride buffer layers on biaxially textured substrates

    DOEpatents

    Sankar, Sambasivan; Goyal, Amit; Barnett, Scott A.; Kim, Ilwon; Kroeger, Donald M.

    2004-08-31

    The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metal and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layers. In some embodiments the article further comprises electromagnetic devices which may be super conducting properties.

  6. Conductive and robust nitride buffer layers on biaxially textured substrates

    DOEpatents

    Sankar, Sambasivan [Chicago, IL; Goyal, Amit [Knoxville, TN; Barnett, Scott A [Evanston, IL; Kim, Ilwon [Skokie, IL; Kroeger, Donald M [Knoxville, TN

    2009-03-31

    The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metals and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layer. In some embodiments the article further comprises electromagnetic devices which may have superconducting properties.

  7. Persistent photoconductivity in AlGaN/GaN heterojunction channels caused by the ionization of deep levels in the AlGaN barrier layer

    SciTech Connect

    Murayama, H.; Akiyama, Y.; Niwa, R.; Sakashita, H.; Sakaki, H.; Kachi, T.; Sugimoto, M.

    2013-12-04

    Time-dependent responses of drain current (I{sub d}) in an AlGaN/GaN HEMT under UV (3.3 eV) and red (2.0 eV) light illumination have been studied at 300 K and 250 K. UV illumination enhances I{sub d} by about 10 %, indicating that the density of two-dimensional electrons is raised by about 10{sup 12} cm{sup −2}. When UV light is turned off at 300 K, a part of increased I{sub d} decays quickly but the other part of increment is persistent, showing a slow decay. At 250 K, the majority of increment remains persistent. It is found that such a persistent increase of I{sub d} at 250 K can be partially erased by the illumination of red light. These photo-responses are explained by a simple band-bending model in which deep levels in the AlGaN barrier get positively charged by the UV light, resulting in a parabolic band bending in the AlGaN layer, while some potion of those deep levels are neutralized by the red light.

  8. Substrate-induced magnetism in epitaxial graphene buffer layers.

    PubMed

    Ramasubramaniam, A; Medhekar, N V; Shenoy, V B

    2009-07-01

    Magnetism in graphene is of fundamental as well as technological interest, with potential applications in molecular magnets and spintronic devices. While defects and/or adsorbates in freestanding graphene nanoribbons and graphene sheets have been shown to cause itinerant magnetism, controlling the density and distribution of defects and adsorbates is in general difficult. We show from first principles calculations that graphene buffer layers on SiC(0001) can also show intrinsic magnetism. The formation of graphene-substrate chemical bonds disrupts the graphene pi-bonds and causes localization of graphene states near the Fermi level. Exchange interactions between these states lead to itinerant magnetism in the graphene buffer layer. We demonstrate the occurrence of magnetism in graphene buffer layers on both bulk-terminated as well as more realistic adatom-terminated SiC(0001) surfaces. Our calculations show that adatom density has a profound effect on the spin distribution in the graphene buffer layer, thereby providing a means of engineering magnetism in epitaxial graphene.

  9. On the importance of AlGaN electron blocking layer design for GaN-based light-emitting diodes

    SciTech Connect

    Sheng Xia, Chang Simon Li, Z. M.; Sheng, Yang

    2013-12-02

    There has been confusion regarding the usefulness of AlGaN electron blocking layer (EBL) in GaN-based light-emitting diodes (LEDs) with some published experimental data indicating that the LEDs without EBL performed better than those with it. InGaN/GaN LEDs have been investigated numerically to analyze its actual effect in these devices. Simulation results show that hole blocking effect of EBL mainly determines the effectiveness of using it which is more sensitive to its Al composition, band offset ratio, and polarization charges. It is found that the choice of Al composition is critical for EBL to improve the optical performance of GaN-based LEDs.

  10. Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

    SciTech Connect

    Malinverni, M. Lamy, J.-M.; Martin, D.; Grandjean, N.; Feltin, E.; Dorsaz, J.; Castiglia, A.; Rossetti, M.; Duelk, M.; Vélez, C.

    2014-12-15

    We demonstrate state-of-the-art p-type (Al)GaN layers deposited at low temperature (740 °C) by ammonia molecular beam epitaxy (NH{sub 3}-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGaN quantum well active region. Typical p-type GaN resistivities and contact resistances are 0.4 Ω cm and 5 × 10{sup −4} Ω cm{sup 2}, respectively. As a test bed, we fabricated a hybrid laser structure emitting at 400 nm combining n-type AlGaN cladding and InGaN active region grown by metal-organic vapor phase epitaxy, with the p-doped waveguide and cladding layers grown by NH{sub 3}-MBE. Single-mode ridge-waveguide LD exhibits a threshold voltage as low as 4.3 V for an 800 × 2 μm{sup 2} ridge dimension and a threshold current density of ∼5 kA cm{sup −2} in continuous wave operation. The series resistance of the device is 6 Ω and the resistivity is 1.5 Ω cm, confirming thereby the excellent electrical properties of p-type Al{sub 0.06}Ga{sub 0.94}N:Mg despite the low growth temperature.

  11. Advanced titania buffer layer architectures prepared by chemical solution deposition

    NASA Astrophysics Data System (ADS)

    Kunert, J.; Bäcker, M.; Brunkahl, O.; Wesolowski, D.; Edney, C.; Clem, P.; Thomas, N.; Liersch, A.

    2011-08-01

    Chemical solution deposition (CSD) was used to grow high-quality (100) oriented films of SrTiO3 (STO) on CSD CaTiO3 (CTO), Ba0.1Ca0.9TiO3 (BCT) and STO seed and template layers. These template films bridge the lattice misfit between STO and the nickel-tungsten (NiW) substrate, assisting in dense growth of textured STO. Additional niobium (Nb) doping of the STO buffer layer reduces oxygen diffusion which is necessary to avoid undesired oxidation of the NiW. The investigated templates offer suitable alternatives to established standard buffer systems like La2Zr2O7 (LZO) and CeO2 for coated conductors.

  12. An ultra-thin buffer layer for Ge epitaxial layers on Si

    SciTech Connect

    Kawano, M.; Yamada, S.; Tanikawa, K.; Miyao, M.; Hamaya, K.; Sawano, K.

    2013-03-25

    Using an Fe{sub 3}Si insertion layer, we study epitaxial growth of Ge layers on a Si substrate by a low-temperature molecular beam epitaxy technique. When we insert only a 10-nm-thick Fe{sub 3}Si layer in between Si and Ge, epitaxial Ge layers can be obtained on Si. The detailed structural characterizations reveal that a large lattice mismatch of {approx}4% is completely relaxed in the Fe{sub 3}Si layer. This means that the Fe{sub 3}Si layers can become ultra-thin buffer layers for Ge on Si. This method will give a way to realize a universal buffer layer for Ge, GaAs, and related devices on a Si platform.

  13. Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer.

    PubMed

    Heilmann, Martin; Munshi, A Mazid; Sarau, George; Göbelt, Manuela; Tessarek, Christian; Fauske, Vidar T; van Helvoort, Antonius T J; Yang, Jianfeng; Latzel, Michael; Hoffmann, Björn; Conibeer, Gavin; Weman, Helge; Christiansen, Silke

    2016-06-01

    The monolithic integration of wurtzite GaN on Si via metal-organic vapor phase epitaxy is strongly hampered by lattice and thermal mismatch as well as meltback etching. This study presents single-layer graphene as an atomically thin buffer layer for c-axis-oriented growth of vertically aligned GaN nanorods mediated by nanometer-sized AlGaN nucleation islands. Nanostructures of similar morphology are demonstrated on graphene-covered Si(111) as well as Si(100). High crystal and optical quality of the nanorods are evidenced through scanning transmission electron microscopy, micro-Raman, and cathodoluminescence measurements supported by finite-difference time-domain simulations. Current-voltage characteristics revealed high vertical conduction of the as-grown GaN nanorods through the Si substrates. These findings are substantial to advance the integration of GaN-based devices on any substrates of choice that sustains the GaN growth temperatures, thereby permitting novel designs of GaN-based heterojunction device concepts.

  14. Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer.

    PubMed

    Heilmann, Martin; Munshi, A Mazid; Sarau, George; Göbelt, Manuela; Tessarek, Christian; Fauske, Vidar T; van Helvoort, Antonius T J; Yang, Jianfeng; Latzel, Michael; Hoffmann, Björn; Conibeer, Gavin; Weman, Helge; Christiansen, Silke

    2016-06-01

    The monolithic integration of wurtzite GaN on Si via metal-organic vapor phase epitaxy is strongly hampered by lattice and thermal mismatch as well as meltback etching. This study presents single-layer graphene as an atomically thin buffer layer for c-axis-oriented growth of vertically aligned GaN nanorods mediated by nanometer-sized AlGaN nucleation islands. Nanostructures of similar morphology are demonstrated on graphene-covered Si(111) as well as Si(100). High crystal and optical quality of the nanorods are evidenced through scanning transmission electron microscopy, micro-Raman, and cathodoluminescence measurements supported by finite-difference time-domain simulations. Current-voltage characteristics revealed high vertical conduction of the as-grown GaN nanorods through the Si substrates. These findings are substantial to advance the integration of GaN-based devices on any substrates of choice that sustains the GaN growth temperatures, thereby permitting novel designs of GaN-based heterojunction device concepts. PMID:27124605

  15. Flexible Protocrystalline Silicon Solar Cells with Amorphous Buffer Layer

    NASA Astrophysics Data System (ADS)

    Ishikawa, Yasuaki; Schubert, Markus B.

    2006-09-01

    A low deposition temperature of 110 °C is mandatory for directly growing amorphous-silicon-based solar cells on plastic foil. The optimum absorber material at this low temperature is protocrystalline, i.e., right at the transition between amorphous and crystalline silicon. Polyethylene terephtalate foil of 50 μm thickness form the substrate of our flexible p-i-n single-junction cells. We discuss three peculiar processing techniques for achieving the maximum photovoltaic conversion efficiency of flexible low-temperature solar cells. First, we employ an optimized microcrystalline silicon p-type window layer; second, we use protocrystalline silicon for the i-layer; third, we insert an undoped amorphous silicon buffer layer at the p/i interface. The best flexible cells attain power conversion efficiencies of up to 4.9%.

  16. Photo-induced wettability of TiO{sub 2} film with Au buffer layer

    SciTech Connect

    Purkayastha, Debarun Dhar; Sangani, L. D. Varma; Krishna, M. Ghanashyam; Madhurima, V.

    2014-04-24

    The effect of thickness of Au buffer layer (15-25 nm) between TiO{sub 2} film and substrate on the wettability of TiO{sub 2} films is reported. TiO{sub 2} films grown on Au buffer layer have a higher contact angle of 96-;100° as compared to 47.6o for the film grown without buffer layer. The transition from hydrophobicity to hydrophilicity under UV irradiation occurs within 10 min. for the buffer layered films whereas it is almost 30 min. for the film grown without buffer layer. The enhanced photo induced hydrophilicity is shown to be surface energy driven.

  17. Buffer layers on rolled nickel or copper as superconductor substrates

    DOEpatents

    Paranthaman, Mariappan; Lee, Dominic F.; Kroeger, Donald M.; Goyal, Amit

    2000-01-01

    Buffer layer architectures are epitaxially deposited on biaxially-textured rolled substrates of nickel and/or copper and their alloys for high current conductors, and more particularly buffer layer architectures such as Y.sub.2 O.sub.3 /Ni, YSZ/Y.sub.2 O.sub.3 /Ni, Yb.sub.2 O.sub.3 /Ni, Yb.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Ni, Yb.sub.2 O.sub.3 /CeO.sub.2 /Ni, RE.sub.2 O.sub.3 /Ni (RE=Rare Earth), and Yb.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Ni, Y.sub.2 O.sub.3 /Cu, YSZ/Y.sub.2 O.sub.3 /Cu, Yb.sub.2 O.sub.3 /Cu, Yb.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Cu, Yb.sub.2 O.sub.3 /CeO.sub.2 /Cu, RE.sub.2 O.sub.3 /Cu, and Yb.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Cu. Deposition methods include physical vapor deposition techniques which include electron-beam evaporation, rf magnetron sputtering, pulsed laser deposition, thermal evaporation, and solution precursor approach, which includes chemical vapor deposition, combustion CVD, metal-organic decomposition, sol-gel processing, and plasma spray.

  18. Leakage effects in n-GaAs MESFET with n-GaAs buffer layer

    NASA Technical Reports Server (NTRS)

    Wang, Y. C.; Bahrami, M.

    1983-01-01

    Whereas improvement of the interface between the active layer and the buffer layer has been demonstrated, the leakage effects can be important if the buffer layer resistivity is not sufficiently high and/or the buffer layer thickness is not sufficiently small. It was found that two buffer leakage currents exist from the channel under the gate to the source and from drain to the channel in addition to the buffer leakage resistance between drain and source. It is shown that for a 1 micron gate-length n-GaAs MESFET, if the buffer layer resistivity is 12 OHM-CM and the buffer layer thickness h is 2 microns, the performance of the device degrades drastically. It is suggested that h should be below 2 microns.

  19. Doped Y.sub.2O.sub.3 buffer layers for laminated conductors

    DOEpatents

    Paranthaman, Mariappan Parans [Knoxville, TN; Schoop, Urs [Westborough, MA; Goyal, Amit [Knoxville, TN; Thieme, Cornelis Leo Hans [Westborough, MA; Verebelyi, Darren T [Oxford, MA; Rupich, Martin W [Framingham, MA

    2007-08-21

    A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the metallic substrate, the biaxially textured buffer layer comprising Y.sub.2O.sub.3 and a dopant for blocking cation diffusion through the Y.sub.2O.sub.3, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.

  20. Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

    NASA Astrophysics Data System (ADS)

    Cheng, Jianpeng; Yang, Xuelin; Sang, Ling; Guo, Lei; Zhang, Jie; Wang, Jiaming; He, Chenguang; Zhang, Lisheng; Wang, Maojun; Xu, Fujun; Tang, Ning; Qin, Zhixin; Wang, Xinqiang; Shen, Bo

    2016-03-01

    By employing a single AlGaN layer with low Al composition, high quality and uniformity AlGaN/GaN heterostructures have been successfully grown on Si substrates by metal-organic chemical vapor deposition (MOCVD). The heterostructures exhibit a high electron mobility of 2150 cm2/Vs with an electron density of 9.3 × 1012 cm‑2. The sheet resistance is 313 ± 4 Ω/◻ with ±1.3% variation. The high uniformity is attributed to the reduced wafer bow resulting from the balance of the compressive stress induced and consumed during the growth, and the thermal tensile stress induced during the cooling down process. By a combination of theoretical calculations and in situ wafer curvature measurements, we find that the compressive stress consumed by the dislocation relaxation (~1.2 GPa) is comparable to the value of the thermal tensile stress (~1.4 GPa) and we should pay more attention to it during growth of GaN on Si substrates. Our results demonstrate a promising approach to simplifying the growth processes of GaN-on-Si to reduce the wafer bow and lower the cost while maintaining high material quality.

  1. Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

    PubMed Central

    Cheng, Jianpeng; Yang, Xuelin; Sang, Ling; Guo, Lei; Zhang, Jie; Wang, Jiaming; He, Chenguang; Zhang, Lisheng; Wang, Maojun; Xu, Fujun; Tang, Ning; Qin, Zhixin; Wang, Xinqiang; Shen, Bo

    2016-01-01

    By employing a single AlGaN layer with low Al composition, high quality and uniformity AlGaN/GaN heterostructures have been successfully grown on Si substrates by metal-organic chemical vapor deposition (MOCVD). The heterostructures exhibit a high electron mobility of 2150 cm2/Vs with an electron density of 9.3 × 1012 cm−2. The sheet resistance is 313 ± 4 Ω/◻ with ±1.3% variation. The high uniformity is attributed to the reduced wafer bow resulting from the balance of the compressive stress induced and consumed during the growth, and the thermal tensile stress induced during the cooling down process. By a combination of theoretical calculations and in situ wafer curvature measurements, we find that the compressive stress consumed by the dislocation relaxation (~1.2 GPa) is comparable to the value of the thermal tensile stress (~1.4 GPa) and we should pay more attention to it during growth of GaN on Si substrates. Our results demonstrate a promising approach to simplifying the growth processes of GaN-on-Si to reduce the wafer bow and lower the cost while maintaining high material quality. PMID:26960730

  2. Superconducting composite with multilayer patterns and multiple buffer layers

    DOEpatents

    Wu, X.D.; Muenchausen, R.E.

    1993-10-12

    An article of manufacture is described including a substrate, a patterned interlayer of a material selected from the group consisting of magnesium oxide, barium-titanium oxide or barium-zirconium oxide, the patterned interlayer material overcoated with a secondary interlayer material of yttria-stabilized zirconia or magnesium-aluminum oxide, upon the surface of the substrate whereby an intermediate article with an exposed surface of both the overcoated patterned interlayer and the substrate is formed, a coating of a buffer layer selected from the group consisting of cerium oxide, yttrium oxide, curium oxide, dysprosium oxide, erbium oxide, europium oxide, iron oxide, gadolinium oxide, holmium oxide, indium oxide, lanthanum oxide, manganese oxide, lutetium oxide, neodymium oxide, praseodymium oxide, plutonium oxide, samarium oxide, terbium oxide, thallium oxide, thulium oxide, yttrium oxide and ytterbium oxide over the entire exposed surface of the intermediate article, and, a ceramic superconductor. 5 figures.

  3. Reducing interface recombination for Cu(In,Ga)Se{sub 2} by atomic layer deposited buffer layers

    SciTech Connect

    Hultqvist, Adam; Bent, Stacey F.; Li, Jian V.; Kuciauskas, Darius; Dippo, Patricia; Contreras, Miguel A.; Levi, Dean H.

    2015-07-20

    Partial CuInGaSe{sub 2} (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnO{sub x} buffer layers were compared with chemical bath deposited CdS buffer layers. Band bending, charge density, and interface state density were extracted from the CV measurement using an analysis technique new to CIGS. The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystalline II–VI systems. Both the PL spectra and its lifetime depend on the buffer layer; thus, these measurements are not only sensitive to the absorber but also to the absorber/buffer layer system. Pretreatment of the CIGS prior to the buffer layer deposition plays a significant role on the electrical properties for the same buffer layer/CIGS stack, further illuminating the importance of good interface formation. Finally, ZnS is found to be the best performing buffer layer in this study, especially if the CIGS surface is pretreated with potassium cyanide.

  4. CONDENSED MATTER: STRUCTURE, THERMAL AND MECHANICAL PROPERTIES: The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates

    NASA Astrophysics Data System (ADS)

    Wu, Yu-Xin; Zhu, Jian-Jun; Zhao, De-Gang; Liu, Zong-Shun; Jiang, De-Sheng; Zhang, Shu-Ming; Wang, Yu-Tian; Wang, Hui; Chen, Gui-Feng; Yang, Hui

    2009-10-01

    High-quality and nearly crack-free GaN epitaxial layer was obtained by inserting a single AlGaN interlayer between GaN epilayer and high-temperature AlN buffer layer on Si (111) substrate by metalorganic chemical vapor deposition. This paper investigates the effect of AlGaN interlayer on the structural properties of the resulting GaN epilayer. It confirms from the optical microscopy and Raman scattering spectroscopy that the AlGaN interlayer has a remarkable effect on introducing relative compressive strain to the top GaN layer and preventing the formation of cracks. X-ray diffraction and transmission electron microscopy analysis reveal that a significant reduction in both screw and edge threading dislocations is achieved in GaN epilayer by the insertion of AlGaN interlayer. The process of threading dislocation reduction in both AlGaN interlayer and GaN epilayer is demonstrated.

  5. Superconducting composite with multilayer patterns and multiple buffer layers

    DOEpatents

    Wu, Xin D.; Muenchausen, Ross E.

    1993-01-01

    An article of manufacture including a substrate, a patterned interlayer of a material selected from the group consisting of magnesium oxide, barium-titanium oxide or barium-zirconium oxide, the patterned interlayer material overcoated with a secondary interlayer material of yttria-stabilized zirconia or magnesium-aluminum oxide, upon the surface of the substrate whereby an intermediate article with an exposed surface of both the overcoated patterned interlayer and the substrate is formed, a coating of a buffer layer selected from the group consisting of cerium oxide, yttrium oxide, curium oxide, dysprosium oxide, erbium oxide, europium oxide, iron oxide, gadolinium oxide, holmium oxide, indium oxide, lanthanum oxide, manganese oxide, lutetium oxide, neodymium oxide, praseodymium oxide, plutonium oxide, samarium oxide, terbium oxide, thallium oxide, thulium oxide, yttrium oxide and ytterbium oxide over the entire exposed surface of the intermediate article, and, a ceramic superco n FIELD OF THE INVENTION The present invention relates to the field of superconducting articles having two distinct regions of superconductive material with differing in-plane orientations whereby the conductivity across the boundary between the two regions can be tailored. This invention is the result of a contract with the Department of Energy (Contract No. W-7405-ENG-36).

  6. Compositional inhomogeneities in AlGaN thin films grown by molecular beam epitaxy: Effect on MSM UV photodetectors

    NASA Astrophysics Data System (ADS)

    Pramanik, Pallabi; Sen, Sayantani; Singha, Chirantan; Roy, Abhra Shankar; Das, Alakananda; Sen, Susanta; Bhattacharyya, A.

    2016-10-01

    Ultraviolet (UV) MSM photodetectors (PD) based on AlGaN alloys find many applications, including flame sensing. In this work we investigate the dependence of AlGaN based photodetectors grown by MBE on the kinetics of growth. MSM photodetectors were fabricated in the interdigitated configuration with Ni/Au contacts having 400 μm finger length and 10 μm finger spacing. Bulk Al0.4Ga0.6N films were grown on to sapphire substrates using an AlN buffer layer. A series of PDs were developed using the Al0.4Ga0.6N films grown under different group III/V flux ratios ranging from stoichiometric conditions to much higher than unity. Upon testing, it was observed that the otherwise identical photodetectors show significant decrease in dark current as AlGaN deposition conditions change from stoichiometric to excess group III, due to reduction of unintentional incorporation of oxygen-related point defects. In addition, the intensity and spectral dependence of the photocurrent also change, showing an extended low energy tail for the former and a sharp and prominent excitonic peak for the latter. The optical transmission measurements indicate a variation in Urbach energy with deposition conditions of the AlGaN films, although they have the same absorption edge. While all samples show a single red-shifted photoluminescence peak at room temperature, upon cooling, multiple higher energy peaks appear in the photoluminescence (PL) spectra, indicating that the alloys contain complex compositional inhomogeneities. Two types of alloy fluctuations, determined by the growth conditions, have been identified that modulate the optoelectronic properties of AlGaN by changing the spatial localization of excitons, thereby altering their stability. We identified that growth under stoichiometric conditions leads to compositional inhomogeneities that play a detrimental role in the operation of MSM photodetectors, which reduces the sharpness of the sensitivity edge, while growth under excess metal

  7. Method of deforming a biaxially textured buffer layer on a textured metallic substrate and articles therefrom

    DOEpatents

    Lee, Dominic F.; Kroeger, Donald M.; Goyal, Amit

    2000-01-01

    The present invention provides methods and biaxially textured articles having a deformed epitaxial layer formed therefrom for use with high temperature superconductors, photovoltaic, ferroelectric, or optical devices. A buffer layer is epitaxially deposited onto biaxially-textured substrates and then mechanically deformed. The deformation process minimizes or eliminates grooves, or other irregularities, formed on the buffer layer while maintaining the biaxial texture of the buffer layer. Advantageously, the biaxial texture of the buffer layer is not altered during subsequent heat treatments of the deformed buffer. The present invention provides mechanical densification procedures which can be incorporated into the processing of superconducting films through the powder deposit or precursor approaches without incurring unfavorable high-angle grain boundaries.

  8. Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET

    NASA Astrophysics Data System (ADS)

    Yunpeng, Jia; Hongyuan, Su; Rui, Jin; Dongqing, Hu; Yu, Wu

    2016-02-01

    The addition of a buffer layer can improve the device's secondary breakdown voltage, thus, improving the single event burnout (SEB) threshold voltage. In this paper, an N type linear doping buffer layer is proposed. According to quasi-stationary avalanche simulation and heavy ion beam simulation, the results show that an optimized linear doping buffer layer is critical. As SEB is induced by heavy ions impacting, the electric field of an optimized linear doping buffer device is much lower than that with an optimized constant doping buffer layer at a given buffer layer thickness and the same biasing voltages. Secondary breakdown voltage and the parasitic bipolar turn-on current are much higher than those with the optimized constant doping buffer layer. So the linear buffer layer is more advantageous to improving the device's SEB performance. Project supported by the National Natural Science Foundation of China (No. 61176071), the Doctoral Fund of Ministry of Education of China (No. 20111103120016), and the Science and Technology Program of State Grid Corporation of China (No. SGRI-WD-71-13-006).

  9. Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom

    DOEpatents

    Paranthaman, M. Parans; Aytug, Tolga; Christen, David K.

    2005-10-18

    An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

  10. Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom

    DOEpatents

    Paranthaman, M. Parans; Aytug, Tolga; Christen, David K.

    2003-09-09

    An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

  11. Deep traps responsible for hysteresis in capacitance-voltage characteristics of AlGaN /GaN heterostructure transistors

    NASA Astrophysics Data System (ADS)

    Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Markov, A. V.; Dabiran, A. M.; Wowchak, A. M.; Osinsky, A. V.; Cui, B.; Chow, P. P.; Pearton, S. J.

    2007-12-01

    The origin of hysteresis in capacitance-voltage (C-V) characteristics was studied for Schottky diodes prepared on AlGaN /GaN transistor structures with GaN (Fe) buffers. The application of reverse bias leads to a shift of C-V curves toward higher positive voltages. The magnitude of the effect is shown to increase for lower temperatures. The phenomenon is attributed to tunneling of electrons from the Schottky gate to localized states in the structure. A technique labeled "reverse" deep level transient spectroscopy was used to show that the deep traps responsible for the hysteresis have activation energies of 0.25, 0.6, and 0.9eV. Comparison with deep trap spectra of GaN buffers and Si doped n-GaN films prepared on GaN buffers suggests that the traps in question are located in the buffer layer.

  12. Microstructures of YBa2Cu3Oy Layers Deposited on Conductive Layer-Buffered Metal Tapes

    NASA Astrophysics Data System (ADS)

    Ichinose, Ataru; Hashimoto, Masayuki; Horii, Shigeru; Doi, Toshiya

    REBa2Cu3Oy (REBCO; RE: rare-earth elements)-coated conductors (CCs) have high potential for use in superconducting devices. In particular, REBCO CCs are useful for superconducting devices working at relatively high temperatures near 77 K. The important issues in their applications are high performance, reliability and low cost. To date, sufficient performance for some applications has almost been achieved by considerable efforts. The establishment of the reliability of superconducting devices is under way at present. The issue of low cost must be resolved to realize the application of superconducting devices in the near future. Therefore, we have attempted several ways to reduce the cost of REBCO CCs. The coated conductors using a Nb-doped SrTiO3 buffer layer and Ni-plated Cu and stainless steel laminate metal tapes have recently been developed to eliminate the use of electric stabilization layers of Cu and Ag, which are expected to reduce the material cost. Good superconducting properties are obtained at 77 K. The critical current density (JC) at 77 K under a magnetic self-field is determined to be more than 2x106 A/cm2. The microstructures of the CCs are analyzed by transmission electron microscopy to obtain a much higher quality. By microscopic structure analysis, an overgrowth of the buffer layer is observed at a grain boundary of the metal substrate, which is one of the reasons for the high JC.

  13. MgO buffer layers on rolled nickel or copper as superconductor substrates

    DOEpatents

    Paranthaman, Mariappan; Goyal, Amit; Kroeger, Donald M.; List, III, Frederic A.

    2001-01-01

    Buffer layer architectures are epitaxially deposited on biaxially-textured rolled-Ni and/or Cu substrates for high current conductors, and more particularly buffer layer architectures such as MgO/Ag/Pt/Ni, MgO/Ag/Pd/Ni, MgO/Ag/Ni, MgO/Ag/Pd/Cu, MgO/Ag/Pt/Cu, and MgO/Ag/Cu. Techniques used to deposit these buffer layers include electron beam evaporation, thermal evaporation, rf magnetron sputtering, pulsed laser deposition, metal-organic chemical vapor deposition (MOCVD), combustion CVD, and spray pyrolysis.

  14. Method for making MgO buffer layers on rolled nickel or copper as superconductor substrates

    DOEpatents

    Paranthaman, Mariappan; Goyal, Amit; Kroeger, Donald M.; List, III, Frederic A.

    2002-01-01

    Buffer layer architectures are epitaxially deposited on biaxially-textured rolled-Ni and/or Cu substrates for high current conductors, and more particularly buffer layer architectures such as MgO/Ag/Pt/Ni, MgO/Ag/Pd/Ni, MgO/Ag/Ni, MgO/Ag/Pd/Cu, MgO/Ag/Pt/Cu, and MgO/Ag/Cu. Techniques used to deposit these buffer layers include electron beam evaporation, thermal evaporation, rf magnetron sputtering, pulsed laser deposition, metal-organic chemical vapor deposition (MOCVD), combustion CVD, and spray pyrolysis.

  15. GaAs buffer layer technique for vertical nanowire growth on Si substrate

    SciTech Connect

    Xu, Xiaoqing Parizi, Kokab B.; Huo, Yijie; Kang, Yangsen; Philip Wong, H.-S.; Li, Yang

    2014-02-24

    Gold catalyzed vapor-liquid-solid method is widely applied to III–V nanowire (NW) growth on Si substrate. However, the easy oxidation of Si, possible Si contamination in the NWs, high defect density in the NWs, and high sensitivity of the NW morphology to growth conditions largely limit its controllability. In this work, we developed a buffer layer technique by introducing a GaAs thin film with predefined polarity as a template. It is found that samples grown on these buffer layers all have high vertical NW yields in general, due to the single-orientation of the buffer layers. Low temperature buffer with smoother surface leads to highest yield of vertical NWs, while high temperature (HT) buffer with better crystallinity results in perfect NW quality. The defect-free property we observed here is very promising for optoelectronic device applications based on GaAs NW. Moreover, the buffer layers can eliminate Si contamination by preventing Si-Au alloy formation and by increasing the thickness of the Si diffusion barrier, thus providing more flexibility to vertical NW growth. The buffer layer technique we demonstrated here could be easily extended to other III-V on Si system for electronic and photonic applications.

  16. Critical CuI buffer layer surface density for organic molecular crystal orientation change

    SciTech Connect

    Ahn, Kwangseok; Kim, Jong Beom; Lee, Dong Ryeol; Kim, Hyo Jung; Lee, Hyun Hwi

    2015-01-21

    We have determined the critical surface density of the CuI buffer layer inserted to change the preferred orientation of copper phthalocyanine (CuPc) crystals grown on the buffer layer. X-ray reflectivity measurements were performed to obtain the density profiles of the buffer layers and out-of-plane and 2D grazing-incidence X-ray diffraction measurements were performed to determine the preferred orientations of the molecular crystals. Remarkably, it was found that the preferred orientation of the CuPc film is completely changed from edge-on (1 0 0) to face-on (1 1 −2) by a CuI buffer layer with a very low surface density, so low that a large proportion of the substrate surface is bare.

  17. Effect of buffer layer growth temperature on epitaxial GaN films deposited by magnetron sputtering

    SciTech Connect

    Mohanta, P.; Singh, D.; Kumar, R.; Ganguli, T.; Srinivasa, R. S.; Major, S. S.

    2012-06-05

    Epitaxial GaN films were deposited by reactive sputtering of a GaAs target in 100 % nitrogen at 700 deg. C on ZnO buffer layers grown at different substrate temperatures over sapphire substrates. High resolution X-ray diffraction measurements and the corresponding analysis show that the growth temperature of buffer layers significantly affects the micro-structural parameters of GaN epilayer, such as lateral coherence length, tilt and twist, while the vertical coherence length remains unaffected. The optimum substrate temperature for buffer layer growth has been found to be 300 deg. C. High epitaxial quality GaN film grown on such a buffer layer exhibited micro strain of 1.8x10{sup -4} along with screw and edge type dislocation densities of 7.87x10{sup 9} and 1.16x10{sup 11}, respectively.

  18. Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier

    NASA Astrophysics Data System (ADS)

    Jia, Chuanyu; Yu, Tongjun; Feng, Xiaohui; Wang, Kun; Zhang, Guoyi

    2016-09-01

    The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL.

  19. Morphology and wettability of ZnO nanostructures prepared by hydrothermal method on various buffer layers

    NASA Astrophysics Data System (ADS)

    Li, Bao-jia; Huang, Li-jing; Zhou, Ming; Ren, Nai-fei

    2013-12-01

    Zinc oxide (ZnO) nanostructures were prepared by hydrothermal method on glass substrates with various buffer layers: Ag, Al, aluminum-doped zinc oxide (AZO) and tin-doped indium oxide (ITO). The structure, morphology and wettability of the ZnO nanostructured surfaces were investigated by using X-ray diffraction, scanning electron microscopy and water contact angle (WCA) analysis methods, respectively. All the nanostructures grown on glass with various buffer layers exhibited strong growth orientation along the (1 0 1) plane. The nature of the buffer layer was found to have remarkable effect on the morphology and wettability of the ZnO nanostructures. Whether the buffer layers were hydrophilic or low hydrophobic, all the ZnO nanostructures grown on the various buffer layers showed high hydrophobic property, and that grown on the AZO buffer layer even exhibited superhydrophobicity with a WCA of 151.1°. This work may provide a scientific basis for self-cleaning ZnO-based optoelectronic device applications.

  20. The effect of the carbon nanotube buffer layer on the performance of a Li metal battery

    NASA Astrophysics Data System (ADS)

    Zhang, Ding; Zhou, Yi; Liu, Changhong; Fan, Shoushan

    2016-05-01

    Lithium (Li) metal is one of the most promising candidates as an anode for the next-generation energy storage systems because of its high specific capacity and lowest negative electrochemical potential. But the growth of Li dendrites limits the application of the Li metal battery. In this work, a type of modified Li metal battery with a carbon nanotube (CNT) buffer layer inserted between the separator and the Li metal electrode was reported. The electrochemical results show that the modified batteries have a much better rate capability and cycling performance than the conventional Li metal batteries. The mechanism study by electrochemical impedance spectroscopy reveals that the modified battery has a smaller charge transfer resistance and larger Li ion diffusion coefficient during the deposition process on the Li electrode than the conventional Li metal batteries. Symmetric battery tests show that the interfacial behavior of the Li metal electrode with the buffer layer is more stable than the naked Li metal electrode. The morphological characterization of the CNT buffer layer and Li metal lamina reveals that the CNT buffer layer has restrained the growth of Li dendrites. The CNT buffer layer has great potential to solve the safety problem of the Li metal battery.Lithium (Li) metal is one of the most promising candidates as an anode for the next-generation energy storage systems because of its high specific capacity and lowest negative electrochemical potential. But the growth of Li dendrites limits the application of the Li metal battery. In this work, a type of modified Li metal battery with a carbon nanotube (CNT) buffer layer inserted between the separator and the Li metal electrode was reported. The electrochemical results show that the modified batteries have a much better rate capability and cycling performance than the conventional Li metal batteries. The mechanism study by electrochemical impedance spectroscopy reveals that the modified battery has a

  1. Photovoltaic devices comprising zinc stannate buffer layer and method for making

    DOEpatents

    Wu, Xuanzhi; Sheldon, Peter; Coutts, Timothy J.

    2001-01-01

    A photovoltaic device has a buffer layer zinc stannate Zn.sub.2 SnO.sub.4 disposed between the semiconductor junction structure and the transparent conducting oxide (TCO) layer to prevent formation of localized junctions with the TCO through a thin window semiconductor layer, to prevent shunting through etched grain boundaries of semiconductors, and to relieve stresses and improve adhesion between these layers.

  2. Synchrotron-based XPS studies of AlGaN and GaN surface chemistry and its relationship to ion sensor behaviour

    NASA Astrophysics Data System (ADS)

    Khir, Farah Liyana Muhammad; Myers, Matthew; Podolska, Anna; Sanders, Tarun Maruthi; Baker, Murray V.; Nener, Brett D.; Parish, Giacinta

    2014-09-01

    Soft X-ray photoelectron spectroscopy was used to investigate the fundamental surface chemistry of both AlGaN and GaN surfaces in the context of understanding the behaviour of AlGaN/GaN heterostructures as chemical field-effect transistor (CHEMFET) ion sensors. AlGaN and GaN samples were subjected to different methods of oxide growth (native oxide and thermally grown oxide) and chemical treatment conditions. Our investigations indicate that the etching of the oxide layer is more pronounced with AlGaN compared to GaN. Also, we observed that chloride ions have a greater tendency to attach to the GaN surface relative to the AlGaN surface. Furthermore, chloride ions are comparatively more prevalent on surfaces treated with 5% HCl acid solution. The concentration of chloride ions is even higher on the HCl treated native oxide surface resulting in a very clear deconvolution of the Cl 2p1/2 and Cl 2p3/2 peaks. For GaN and AlGaN surfaces, a linear response (e.g. source-drain current) is typically seen with variation in pH of buffered solutions with constant reference electrode voltage at the surface gate; however, an inverted bath-tub type response (e.g. a maximum at neutral pH and lower values at pH values away from neutral) and a general tendency to negative charge selectivity has been also widely reported. We have shown that our XPS investigations are consistent with the different sensor response reported in the literature for these CHEMFET devices and may help to explain the differing response of these materials.

  3. Buffer layer annealing effects on the magnetization reversal process in Pd/Co/Pd systems

    NASA Astrophysics Data System (ADS)

    Fassatoui, A.; Belhi, R.; Vogel, J.; Abdelmoula, K.

    2016-12-01

    We have investigated the effect of annealing the buffer layer on the magnetization reversal behavior in Pd/Co/Pd thin films using magneto-optical Kerr microscopy. It was found that annealing the buffer layer at 150 °C for 1 h decreases the coercivity and increases the saturation magnetization and the effective magnetic anisotropy constant. This study also shows that the annealing induces a change of the magnetization reversal from a mixed nucleation and domain wall propagation process to one dominated by domain wall propagation. This result demonstrates that the main effect of annealing the buffer layer is to decrease the domain wall pinning in the Co layer, favoring the domain wall propagation mode.

  4. Electron dynamics of the buffer layer and bilayer graphene on SiC

    NASA Astrophysics Data System (ADS)

    Shearer, Alex J.; Johns, James E.; Caplins, Benjamin W.; Suich, David E.; Hersam, Mark C.; Harris, Charles B.

    2014-06-01

    Angle- and time-resolved two-photon photoemission (TPPE) was used to investigate electronic states in the buffer layer of 4H-SiC(0001). An image potential state (IPS) series was observed on this strongly surface-bound buffer layer, and dispersion measurements indicated free-electron-like behavior for all states in this series. These results were compared with TPPE taken on bilayer graphene, which also show the existence of a free-electron-like IPS series. Lifetimes for the n = 2, and n = 3 states were obtained from time-resolved TPPE; slightly increased lifetimes were observed in the bilayer graphene sample for the n = 2 the n = 3 states. Despite the large band gap of graphene at the center of the Brillouin zone, the lifetime results demonstrate that the graphene layers do not behave as a simple tunneling barrier, suggesting that the buffer layer and graphene overlayers play a direct role in the decay of IPS electrons.

  5. The effect of the carbon nanotube buffer layer on the performance of a Li metal battery.

    PubMed

    Zhang, Ding; Zhou, Yi; Liu, Changhong; Fan, Shoushan

    2016-06-01

    Lithium (Li) metal is one of the most promising candidates as an anode for the next-generation energy storage systems because of its high specific capacity and lowest negative electrochemical potential. But the growth of Li dendrites limits the application of the Li metal battery. In this work, a type of modified Li metal battery with a carbon nanotube (CNT) buffer layer inserted between the separator and the Li metal electrode was reported. The electrochemical results show that the modified batteries have a much better rate capability and cycling performance than the conventional Li metal batteries. The mechanism study by electrochemical impedance spectroscopy reveals that the modified battery has a smaller charge transfer resistance and larger Li ion diffusion coefficient during the deposition process on the Li electrode than the conventional Li metal batteries. Symmetric battery tests show that the interfacial behavior of the Li metal electrode with the buffer layer is more stable than the naked Li metal electrode. The morphological characterization of the CNT buffer layer and Li metal lamina reveals that the CNT buffer layer has restrained the growth of Li dendrites. The CNT buffer layer has great potential to solve the safety problem of the Li metal battery. PMID:27181758

  6. The effect of the carbon nanotube buffer layer on the performance of a Li metal battery.

    PubMed

    Zhang, Ding; Zhou, Yi; Liu, Changhong; Fan, Shoushan

    2016-06-01

    Lithium (Li) metal is one of the most promising candidates as an anode for the next-generation energy storage systems because of its high specific capacity and lowest negative electrochemical potential. But the growth of Li dendrites limits the application of the Li metal battery. In this work, a type of modified Li metal battery with a carbon nanotube (CNT) buffer layer inserted between the separator and the Li metal electrode was reported. The electrochemical results show that the modified batteries have a much better rate capability and cycling performance than the conventional Li metal batteries. The mechanism study by electrochemical impedance spectroscopy reveals that the modified battery has a smaller charge transfer resistance and larger Li ion diffusion coefficient during the deposition process on the Li electrode than the conventional Li metal batteries. Symmetric battery tests show that the interfacial behavior of the Li metal electrode with the buffer layer is more stable than the naked Li metal electrode. The morphological characterization of the CNT buffer layer and Li metal lamina reveals that the CNT buffer layer has restrained the growth of Li dendrites. The CNT buffer layer has great potential to solve the safety problem of the Li metal battery.

  7. Improving performance of inverted organic solar cells using ZTO nanoparticles as cathode buffer layer

    NASA Astrophysics Data System (ADS)

    Tsai, Meng-Yen; Cheng, Wen-Hui; Jeng, Jiann-Shing; Chen, Jen-Sue

    2016-06-01

    In this study, a low-temperature solution-processed zinc tin oxide (ZTO) films are successfully utilized as the cathode buffer layer in the inverted organic P3HT:PCBM bulk heterojunction solar cells. ZTO film cathode buffer layer with an appropriate Sn-doping concentration outperforms the zinc oxide (ZnO) film with an improved power conversion efficiency (1.96% (ZTO film) vs. 1.56% (ZnO film)). Furthermore, ZTO nanoparticles (NPs) are also synthesized via low-temperature solution route and the device with ZTO NPs buffer layer exhibits a significant improvement in device performance to reach a PCE of 2.60%. The crystallinity of the cathode buffer layer plays an influential factor in the performance. From impedance spectroscopy analysis, a correlation between short circuit current (Jsc), carrier life time (τavg) and, thus, PCE is observed. The interplay between composition and crystallinity of the cathode buffer layers is discussed to find their influences on the solar cell performance.

  8. Evaluation of methods for application of epitaxial layers of superconductor and buffer layers

    SciTech Connect

    1997-06-01

    The recent achievements in a number of laboratories of critical currents in excess of 1.0x10{sup 6} amp/cm{sup 2} at 77K in YBCO deposited over suitably textured buffer/substrate composites have stimulated interest in the potential applications of coated conductors at high temperatures and high magnetic fields. As of today, two different approaches for obtaining the textured substrates have been identified. These are: Los Alamos National Laboratory`s (LANL) ion-beam assisted deposition called IBAD, to obtain a highly textured yttria-stabilized zirconia (YSZ) buffer on nickel alloy strips, and Oak Ridge National Laboratory`s (ORNL) rolling assisted, bi-axial texturized substrate option called RABiTS. Similarly, based on the published literature, the available options to form High Temperature Superconductor (HTS) films on metallic, semi-metallic or ceramic substrates can be divided into: physical methods, and non-physical or chemical methods. Under these two major groups, the schemes being proposed consist of: - Sputtering - Electron-Beam Evaporation - Flash Evaporation - Molecular Beam Epitaxy - Laser Ablation - Electrophoresis - Chemical Vapor Deposition (Including Metal-Organic Chemical Vapor Deposition) - Sol-Gel - Metal-Organic Decomposition - Electrodeposition, and - Aerosol/Spray Pyrolysis. In general, a spool- to-spool or reel-to-reel type of continuous manufacturing scheme developed out of any of the above techniques, would consist of: - Preparation of Substrate Material - Preparation and Application of the Buffer Layer(s) - Preparation and Application of the HTS Material and Required Post-Annealing, and - Preparation and Application of the External Protective Layer. These operations would be affected by various process parameters which can be classified into: Chemistry and Material Related Parameters; and Engineering and Environmental Based Parameters. Thus, one can see that for successful development of the coated conductors manufacturing process, an

  9. Surface Smoothing Effect and Characteristics of New 1,4-Phenylenediamine Polymer as Anode Buffer Layer

    NASA Astrophysics Data System (ADS)

    Iida, Koichiro; Ogata, Tomoyuki; Okabe, Kazuki; Tanaka, Futoshi; Hara, Masahiko

    2007-11-01

    We have developed a new 1,4-phenylenediamine polymer with suitable properties for the anode buffer layer of organic devices. The anode buffer layer composed of a polymer doped with an electron acceptor [tris(4-bromophenyl)aminium hexachloroantimonate] was found to improve the surface roughness of the anode, particularly when the layer was sufficiently baked at a high temperature to transform it into the glass phase. The phase transition of the layer into the glass phase also affected its electric properties. Despite that the baking temperature was higher than the decomposition temperature of the electron acceptor, the resistivity of the layer with a smooth surface was one order of magnitude lower than that of the undoped layer.

  10. Hafnium nitride buffer layers for growth of GaN on silicon

    DOEpatents

    Armitage, Robert D.; Weber, Eicke R.

    2005-08-16

    Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 {character pullout}m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

  11. Silver hollow optical fibers with acrylic silicone resin coating as buffer layer for sturdy structure

    NASA Astrophysics Data System (ADS)

    Iwai, Katsumasa; Takaku, Hiroyuki; Miyagi, Mitsunobu; Shi, Yi-Wei; Zhu, Xiao-Song; Matsuura, Yuji

    2016-03-01

    For sturdy silver hollow optical fibers, acrylic silicone resin is newly used as a buffer layer between an inner silver layer and a silica capillary. This acrylic silicone resin film prevents the glass surface from chemical and mechanical micro damages during silver plating process, which deteriorate mechanical strength of the hollow fibers. In addition, it keeps high adhesion of the silver layer with the glass surface. We discuss improvement of mechanical strength of the hollow glass fibers without deterioration of optical properties.

  12. Microstructure of GaN epitaxy on SiC using AlN buffer layers

    SciTech Connect

    Ponce, F.A.; Krusor, B.S.; Major, J.S. Jr.; Plano, W.E.; Welch, D.F.

    1995-07-17

    The crystalline structure of GaN epilayers on (0001) SiC substrates has been studied using x-ray diffraction and transmission microscopy. The films were grown by metalorganic chemical vapor deposition, using AlN buffer layers. X-ray diffraction measurements show negligible strain in the epilayer, and a long-range variation in orientation. Transmission electron lattice images show that the AlN buffer layer consists of small crystallites. The nature of the buffer layer and its interfaces with the substrate and the GaN film is discussed. The defect structure of the GaN film away from the substrate consists mostly of threading dislocations with a density of {similar_to}10{sup 9} cm{sup {minus}2}. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

  13. Growth and micro structural studies on Yittria Stabilized Zirconia (YSZ) and Strontium Titanate (STO) buffer layers

    NASA Technical Reports Server (NTRS)

    Srinivas, S.; Pinto, R.; Pai, S. P.; Dsousa, D. P.; Apte, P. R.; Kumar, D.; Purandare, S. C.; Bhatnagar, A. K.

    1995-01-01

    Microstructure of Yittria Stabilized Zirconia (YSZ) and Strontium Titanate (STO) of radio frequency magnetron sputtered buffer layers was studied at various sputtering conditions on Si (100), Sapphire and LaAlO3 (100) substrates. The effect of substrate temperatures up to 800 C and sputtering gas pressures in the range of 50 mTorr. of growth conditions was studied. The buffer layers of YSZ and STO showed a strong tendency for columnar growth was observed above 15 mTorr sputtering gas pressure and at high substrate temperatures. Post annealing of these films in oxygen atmosphere reduced the oxygen deficiency and strain generated during growth of the films. Strong c-axis oriented superconducting YBa2Cu3O7-x (YBCO) thin films were obtained on these buffer layers using pulsed laser ablation technique. YBCO films deposited on multilayers of YSZ and STO were shown to have better superconducting properties.

  14. Buffer layer between a planar optical concentrator and a solar cell

    SciTech Connect

    Solano, Manuel E.; Barber, Greg D.; Lakhtakia, Akhlesh; Faryad, Muhammad; Monk, Peter B.; Mallouk, Thomas E.

    2015-09-15

    The effect of inserting a buffer layer between a periodically multilayered isotropic dielectric (PMLID) material acting as a planar optical concentrator and a photovoltaic solar cell was theoretically investigated. The substitution of the photovoltaic material by a cheaper dielectric material in a large area of the structure could reduce the fabrication costs without significantly reducing the efficiency of the solar cell. Both crystalline silicon (c-Si) and gallium arsenide (GaAs) were considered as the photovoltaic material. We found that the buffer layer can act as an antireflection coating at the interface of the PMLID and the photovoltaic materials, and the structure increases the spectrally averaged electron-hole pair density by 36% for c-Si and 38% for GaAs compared to the structure without buffer layer. Numerical evidence indicates that the optimal structure is robust with respect to small changes in the grating profile.

  15. Effect of buffer layer and external stress on magnetic properties of flexible FeGa films

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaoshan; Zhan, Qingfeng; Dai, Guohong; Liu, Yiwei; Zuo, Zhenghu; Yang, Huali; Chen, Bin; Li, Run-Wei

    2013-05-01

    We systematically investigated the effect of a Ta buffer layer and external stress on the magnetic properties of magnetostrictive Fe81Ga19 films deposited on flexible polyethylene terephthalate (PET) substrates. The Ta buffer layers could effectively smoothen the rough surface of PET. As a result, the FeGa films grown on Ta buffer layers exhibit a weaker uniaxial magnetic anisotropy and lower coercivity, as compared to those films directly grown on PET substrates. By inward and outward bending the FeGa/Ta/PET samples, external in-plane compressive and tensile stresses were applied to the magnetic films. Due to the inverse magnetostrictive effect of FeGa, both the coercivity and squareness of hysteresis loops for FeGa/Ta films could be well tuned under various strains.

  16. Enhanced dielectric properties from barium strontium titanate films with strontium titanate buffer layers

    NASA Astrophysics Data System (ADS)

    Cole, M. W.; Ngo, E.; Hubbard, C.; Hirsch, S. G.; Ivill, M.; Sarney, W. L.; Zhang, J.; Alpay, S. P.

    2013-10-01

    In order to enhance the permittivity and tunability of the dielectric component, a thin film dielectric composite consisting of a radio frequency sputtered SrTiO3 (STO) buffer layer and metalorganic solution deposited Mg-doped BaxSr1-xTiO3 (Mg-BST) thin film overgrowth was developed using affordable industry standard processes and materials. The effect of the STO buffer layer thickness on the dielectric response of the heterostructure was investigated. Our results demonstrate that the composite film heterostructure, evaluated in the metal-insulator-metal configuration Pt/STO/Mg-BST/Pt on sapphire substrate, with the thinner (9-17 nm) STO buffer layers possessed enhanced permittivity (ɛr ˜ 491) with respect to the thicker 41 nm buffer layer (ɛr ˜ 360) and that of a control Mg-BST film without a STO buffer layer (ɛr ˜ 380). Additionally, the composite film with the thinner buffer layers were shown to have low losses (tan δ ˜ 0.02), low leakage characteristics (J = 7.0 × 10-9 A/cm2), high breakdown voltage (VBR > 10 V), a large grain microstructure (˜125 nm), and smooth pin-hole free surfaces. The enhanced permittivity of the composite dielectric film resulted from three major factors: (i) the template-effect of the thin STO buffer layer on the thicker Mg-BST over-layer film to achieve a large grain microstructure, (ii) the low viscosity of the metallo-organic solution deposition (MOSD) solution, which ensured heterogeneous nucleation of the Mg-BST overgrowth film on the surface of the STO buffer layer, and (iii) minimization of the low permittivity grain boundary phase (TiO2-x phase). The dielectric response of the BST can be explained using a thermodynamic model taking into account interlayer electrostatic and electromechanical interactions. Additionally, Mg doping of the BST enabled low loss and low leakage characteristics of the heterostructure. The large permittivity, low loss, low leakage characteristics, and defect free surfaces of the composite

  17. Statistical nanoscale study of localised radiative transitions in GaN/AlGaN quantum wells and AlGaN epitaxial layers

    NASA Astrophysics Data System (ADS)

    Rigutti, L.; Mancini, L.; Lefebvre, W.; Houard, J.; Hernàndez-Maldonado, D.; Di Russo, E.; Giraud, E.; Butté, R.; Carlin, J.-F.; Grandjean, N.; Blavette, D.; Vurpillot, F.

    2016-09-01

    Compositional disorder has important consequences on the optical properties of III-nitride ternary alloys. In AlGaN epilayers and AlGaN-based quantum heterostructures, the potential fluctuations induced by such disorder lead to the localisation of carriers at low temperature, which affects their transition energies. Using the correlations between micro-photoluminescence, scanning transmission electron microscopy and atom probe tomography we have analysed the optical behaviour of Al0.25Ga0.75N epilayers and that of GaN/AlGaN quantum wells, and reconstructed in three dimensions the distribution of chemical species with sub-nanometre spatial resolution. These composition maps served as the basis for the effective mass calculation of electrons and holes involved in radiative transitions. Good statistical predictions were subsequently obtained for the above-mentioned transition and localisation energies by establishing a link with their microstructural properties.

  18. Coercivity enhancement of Nd-Fe-B thin film magnets by Dy buffer and capping layers

    NASA Astrophysics Data System (ADS)

    You, C. Y.; Wang, J. W.; Lu, Z. X.

    2012-04-01

    The Dy layer was inserted into the structure of SiO2/Ti/Nd-Fe-B/Ti as the buffer or capping layer of the Nd-Fe-B layer. The insertions of Dy layers had no significant influence on the film texture with the easy axis mainly perpendicular to the film plane. The film without Dy layer gave the out-of-plane coercivity of 533 kA/m, maximum magnetic energy product (BH)max of 245 kJ/m3. With a Dy buffer layer, the out-of-plane coercivity and (BH)max were increased to 1074 kA/m, 291 kJ/m3 respectively. The film with Dy capping layer had a coercivity of 1035 kA/m and (BH)max of 286 kJ/m3. Microstructure observations showed that the Nd-rich phases were evolved into grain boundaries from triple junctions by a Dy buffer layer deposition, resulting in a well magnetic decoupling of Nd2Fe14B neighboring grains. Through capping a Dy layer, the environment of grain boundaries had been improved and some Dy diffused into Nd2Fe14B phases, which contributed to the enhancement of magnetic performance.

  19. Influence of homo buffer layer thickness on the quality of ZnO epilayers.

    PubMed

    Eid, E A; Fouda, A N

    2015-10-01

    ZnO buffer layers with different thicknesses were deposited on a-plane sapphire substrates at 300 °C. ZnO epilayers were grown on ZnO buffers at 600 °C by radio-frequency magnetron sputtering and vacuum annealed at 900 °C for an hour. Influence of nucleation layer thickness on the structural and quality of ZnO thin films was investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), and Raman spectroscopy. The best ZnO film quality was obtained with the ZnO buffer layer of 45 nm thick which provided the smoothest surface with RMS value of 0.3 nm. X-ray diffraction measurements reveal that the films have a single phase wurtzite structure with (0001) preferred crystal orientation. As evident from narrow FWHM of ZnO (0002) rocking curve, ZnO buffer can serve as a good template for the growth of high-quality ZnO films with little tilt. In addition, the micro-Raman scattering measurements at room temperature revealed the existence of Raman active phonon modes of ZnO; A1(TO), A1(LO) and E2(high). The latter two modes were not observed in thin buffer layer beside the dis-appearance of E2(low) mode in all films. PMID:25950638

  20. Polarization engineering of back-illuminated separate absorption and multiplication AlGaN avalanche photodiodes

    NASA Astrophysics Data System (ADS)

    Yang, Guofeng; Wang, Fuxue

    2016-08-01

    The back-illuminated separate absorption and multiplication AlGaN avalanche photodiodes (APDs) with a p-type graded AlGaN layer have been designed to investigate the polarization engineering on the performance of the devices. The calculated results show that the APD with p-graded AlGaN layer exhibits lower avalanche breakdown voltage and increased maximum multiplication gain compared to the structure with conventional p-type AlGaN layer. The improved performance of the designed APD is numerically explained by the polarization-assisted enhancement of the ionization electric field in the multiplication region and polarization doping effect caused by the p-type graded layer.

  1. GaAs nanowires grown on Al-doped ZnO buffer layer

    NASA Astrophysics Data System (ADS)

    Haggren, Tuomas; Perros, Alexander; Dhaka, Veer; Huhtio, Teppo; Jussila, Henri; Jiang, Hua; Ruoho, Mikko; Kakko, Joona-Pekko; Kauppinen, Esko; Lipsanen, Harri

    2013-08-01

    We report a pathway to grow GaAs nanowires on a variety of substrates using a combination of atomic layer deposition and metallo-organic vapor phase epitaxy (MOVPE). GaAs nanowires were grown via MOVPE at 430-540 °C on an atomic-layer-deposited Al:ZnO buffer layer. The resulting nanowires were affected only by the properties of the buffer layer, allowing nanowire growth on a number of substrates that withstand ˜400 °C. The growth occurred in two phases: initial in-plane growth and subsequent out-plane growth. The nanowires grown exhibited a strong photoluminescence signal both at room temperature and at 12 K. The 12 K photoluminescence peak was at 1.47 eV, which was attributed to Zn autodoping from the buffer layer. The crystal structure was zincblende plagued with either twin planes or diagonal defect planes, which were related to perturbations in the seed particle during the growth. The used method combines substrates with variable properties to nanowire growth on a transparent and conductive Al:ZnO buffer layer.

  2. The role of buffer layers and double windows layers in a solar cell CZTS performances

    NASA Astrophysics Data System (ADS)

    Mebarkia, C.; Dib, D.; Zerfaoui, H.; Belghit, R.

    2016-07-01

    In the overall context of the diversification of the use of natural resources, the use of renewable energy including solar photovoltaic has become increasingly indispensable. As such, the development of a new generation of photovoltaic cells based on CuZnSnS4 (CZTS) looks promising. Cu2ZnSnS4 (CZTS) is a new film absorber, with good physical properties (band gap energy 1.4-1.6 eV with a large absorption coefficient over 104 cm-1). Indeed, the performance of these cells exceeded 30% in recent years. In the present paper, our work based on modeling and numerical simulation, we used SCAPS to study the performance of solar cells based on Cu2ZnSnS4 (CZTS) and thus evaluate the electrical efficiency η for typical structures of n-ZnO:Al / i-ZnO / n-CdS / p-CZTS and n-ITO / n-ZnO:Al / n-CdS /p-CZTS. Furthermore, the influence of the change of CdS by ZnSeand In2S3buffer layer was treated in this paper.

  3. CdS/CdTe thin-film solar cell with a zinc stannate buffer layer

    NASA Astrophysics Data System (ADS)

    Wu, X.; Sheldon, P.; Mahathongdy, Y.; Ribelin, R.; Mason, A.; Moutinho, H. R.; Coutts, T. J.

    1999-03-01

    This paper describes an improved CdS/CdTe polycrystalline thin-film solar-cell device structure that integrates a zinc stannate (Zn2SnO4 or ZTO) buffer layer between the transparent conductive oxide (TCO) layer and the CdS window layer. Zinc stannate films have a high bandgap, high transmittance, low absorptance, and low surface roughness. In addition, these films are chemically stable and exhibit higher resistivities that are roughly matched to that of the CdS window layer in the device structure. Preliminary device results have demonstrated that by integrating a ZTO buffer layer in both SnO2-based and Cd2SnO4 (CTO)-based CdS/CdTe devices, performance and reproducibility can be significantly enhanced.

  4. Exciton-blocking phosphonic acid-treated anode buffer layers for organic photovoltaics

    NASA Astrophysics Data System (ADS)

    Zimmerman, Jeramy D.; Song, Byeongseop; Griffith, Olga; Forrest, Stephen R.

    2013-12-01

    We demonstrate significant improvements in power conversion efficiency of bilayer organic photovoltaics by replacing the exciton-quenching MoO3 anode buffer layer with an exciton-blocking benzylphosphonic acid (BPA)-treated MoO3 or NiO layer. We show that the phosphonic acid treatment creates buffers that block up to 70% of excitons without sacrificing the hole extraction efficiency. Compared to untreated MoO3 anode buffers, BPA-treated NiO buffers exhibit a ˜ 25% increase in the near-infrared spectral response in diphenylanilo functionalized squaraine (DPSQ)/C60-based bilayer devices, increasing the power conversion efficiency under 1 sun AM1.5G simulated solar illumination from 4.8 ± 0.2% to 5.4 ± 0.3%. The efficiency can be further increased to 5.9 ± 0.3% by incorporating a highly conductive exciton blocking bathophenanthroline (BPhen):C60 cathode buffer. We find similar increases in efficiency in two other small-molecule photovoltaic systems, indicating the generality of the phosphonic acid-treated buffer approach to enhance exciton blocking.

  5. Influence of contact shape on AlGaN/GaN Schottky diode prepared on Si with thick buffer layer

    NASA Astrophysics Data System (ADS)

    Kumar, Manoj; Sekiguchi, Hiroto; Okada, Hiroshi; Wakahara, Akihiro

    2013-09-01

    A report on the fabrication and characterization of high performance conventional and ring-shaped AlGaN/GaN Schottky barrier diode on Si is presented. The resulting device exhibited low leakage current, which led to a detectivity performance of 3.48×1013 and 1.76×1013 cm Hz1/2 W-1, respectively, for both conventional and ring-shaped Schottky diode. The differential resistances of both devices were obtained at approximately 1.37×1012 and 1.41×1013 Ω, respectively. The zero bias peak responsivities of conventional and ring-shaped Schottky diodes were estimated to be 3.18 and 2.08 A cm-2/W, respectively. The typical UV to visible rejection ratio was observed over three orders of magnitude at zero bias. The C- V measurements was used to calculate and analyze the polarization sheet charge density of the AlGaN barrier layer by using self-consistently solving Schrodinger's and Poisson's equations. It is demonstrated that the ring shape of the Schottky barrier has higher polarization sheet charge density, which has the consequence that the Schottky shape has influence on the strain of the AlGaN barrier layer.

  6. Degradation Characteristics of MgO Based Magnetic Tunnel Junction Caused by Surface Roughness of Ta/Ru Buffer Layers.

    PubMed

    Lee, Jung Min; Choi, Chul Min; Sukegawa, Hiroaki; Lee, Jeong Yong; Mitani, Seiji; Song, Yun-Heub

    2016-01-01

    We investigated how surface roughness of a Ta/Ru buffer layer affects the degradation characteristics on MgO-based magnetic tunnel junctions (MTJs). MTJs with worse surface roughness on the buffer layer showed increased resistance drift and degraded time-dependent dielectric breakdown (TDDB) characteristics. We suggest that this resulted from reduced MgO thickness on the MTJ with worse surface roughness on the buffer layer, which was estimated by the TDDB and analytic approach. As a result, surface roughness of the buffer layer is a critical factors that impacts the reliability of MTJs, and it should be controlled to have the smallest roughness value as possible. PMID:27398503

  7. Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates

    DOEpatents

    Ptak, Aaron Joseph; Lin, Yong; Norman, Andrew; Alberi, Kirstin

    2015-05-26

    A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a spinel substrate using a sacrificial buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The sacrificial buffer material and semiconductor materials may be deposited using lattice-matching epitaxy or coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The sacrificial buffer layer may be dissolved using an epitaxial liftoff technique in order to separate the semiconductor device from the spinel substrate, and the spinel substrate may be reused in the subsequent fabrication of other semiconductor devices. The low-defect density semiconductor materials produced using this method result in the enhanced performance of the semiconductor devices that incorporate the semiconductor materials.

  8. Benzocyclobutene (BCB) Polymer as Amphibious Buffer Layer for Graphene Field-Effect Transistor.

    PubMed

    Wu, Yun; Zou, Jianjun; Huo, Shuai; Lu, Haiyan; Kong, Yuecan; Chen, Tangshen; Wu, Wei; Xu, Jingxia

    2015-08-01

    Owing to the scattering and trapping effects, the interfaces of dielectric/graphene or substrate/graphene can tailor the performance of field-effect transistor (FET). In this letter, the polymer of benzocyclobutene (BCB) was used as an amphibious buffer layer and located at between the layers of substrate and graphene and between the layers of dielectric and graphene. Interestingly, with the help of nonpolar and hydrophobic BCB buffer layer, the large-scale top-gated, chemical vapor deposited (CVD) graphene transistors was prepared on Si/SiO2 substrate, its cutoff frequency (fT) and the maximum cutoff frequency (fmax) of the graphene field-effect transistor (GFET) can be reached at 12 GHz and 11 GHz, respectively. PMID:26369142

  9. Influence of C or In buffer layer on photoluminescence behaviour of ultrathin ZnO film

    NASA Astrophysics Data System (ADS)

    Saravanan, K.; Jayalakshmi, G.; Krishnan, R.; Sundaravel, B.; Panigrahi, B. K.

    2016-09-01

    We study the effect of the indium or carbon buffer layer on the photoluminescence (PL) property of ZnO ultrathin films deposited on a Si(100) substrate. The surface morphology of the films obtained using scanning tunnelling microscopy shows spherical shaped ZnO nanoparticles of size ˜8 nm in ZnO/C/Si and ˜22 nm in ZnO/Si samples, while the ZnO/In/Si sample shows elliptical shaped ZnO particles. Further, the ZnO/C/Si sample shows densely packed ZnO nanoparticles in comparison with other samples. Strong band edge emission has been observed in the presence of In or C buffer layer, whereas the ZnO/Si sample exhibits poor PL emission. The influence of C and In buffer layers on the PL behaviour of ZnO films is studied in detail using temperature dependent PL measurements in the range of 4 K-300 K. The ZnO/C/Si sample exhibits a multi-fold enhancement in the PL emission intensity with well-resolved free and bound exciton emission lines. Our experimental results imply that the ZnO films deposited on the C buffer layer showed higher particle density and better exciton emission desired for optoelectronic applications.

  10. Sol-gel deposition of buffer layers on biaxially textured metal substances

    DOEpatents

    Shoup, Shara S.; Paranthamam, Mariappan; Beach, David B.; Kroeger, Donald M.; Goyal, Amit

    2000-01-01

    A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing electronically active materials thereon.

  11. Interface characterization of nanometer scale CdS buffer layer in chalcopyrite solar cell

    NASA Astrophysics Data System (ADS)

    Lin, Shih-Hung; Cheng, Tzu-Huan

    2016-06-01

    The buffer layer of a chalcopyrite solar cell plays an important role in optical responses of open circuit voltage (V oc) and short circuit current (J sc). A CdS buffer layer is applicable on the nanometer scale owing to its high carrier concentration and n-type semiconductor behavior in chalcopyrite solar cells. The thin buffer layer also contributes to the passivation of the absorber surface to reduce defect recombination loss. Non-destructive metrological parameters such as photoluminescence (PL) intensity, external quantum efficiency (EQE), and depth-resolved photovoltage are used to characterize the interface quality of CdS/chalcopyrite. The defects and dangling bonds at the absorber surface will cause interface recombination and reduce the cell performance in build-in voltage distribution. Post annealing can improve Cd ion diffusion from the buffer layer to the absorber surface and reduce the density of defects and dangling bonds. After thermal annealing, the EQE, PL intensity, and minority carrier lifetime are improved.

  12. Effect of buffer layer on thermochromic performances of VO2 films fabricated by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Zhu, Benqin; Tao, Haizheng; Zhao, Xiujian

    2016-03-01

    As a well-developed industrial fabricating method, magnetron sputtering technique has its distinct advantages for the large-scale production. In order to investigate the effect of buffer layer on the formation and thermochromic performances of VO2 films, using RF magnetron sputtering method, we fabricated three kinds of buffer layers SiO2, TiO2 and SnO2 on soda lime float-glass. Then according to the reactive DC magnetron sputtering method, VO2 films were deposited. Due to the restriction of heat treatment temperature when using soda lime float-glass as substrates, dense rutile phase TiO2 cannot be formed, leading to the formation of vanadium oxide compounds containing Na ions. When using SnO2 as buffer layer, we found that relatively high pure VO2 can be deposited more easily. In addition, compared with the effect of SiO2 buffer layer, we observed an enhanced visible transparency, a decreased infrared emissivity, which should be mainly originated from the modified morphology and/or the hetero-structured VO2/SnO2 interface.

  13. Growth and micro structural studies on Yittria Stabilized Zirconia (YSZ) and Strontium Titanate (STO) buffer layers

    SciTech Connect

    Srinivas, S.; Bhatnagar, A.K.; Pinto, R.

    1994-12-31

    Microstructure of Yittria Stabilized Zirconia (YSZ) and Strontium Titanate (STO) of radio frequency magnetron sputtered buffer layers was studied at various sputtering conditions on Si<100>, Sapphire and LaAlO{sub 3} <100> substrates. The effect of substrate temperatures upto 800 C and sputtering gas pressures in the range of 50 mTorr. of growth conditions was studied. The buffer layers of YSZ and STO showed a strong tendency for columnar structure with variation growth conditions. The buffer layers of YSZ and STO showed orientation. The tendency for columnar growth was observed above 15 mTorr sputtering gas pressure and at high substrate temperatures. Post annealing of these films in oxygen atmosphere reduced the oxygen deficiency and strain generated during growth of the films. Strong c-axis oriented superconducting YBa{sub 2}Cu{sub 9}O{sub 7-x} (YBCO) thin films were obtained on these buffer layers using pulsed laser ablation technique. YBCO films deposited on multilayers of YSZ and STO were shown to have better superconducting properties.

  14. High-Quality AgGaTe2 Layers on Si Substrates with Ag2Te Buffer Layers

    NASA Astrophysics Data System (ADS)

    Uruno, Aya; Kobayashi, Masakazu

    2016-09-01

    AgGaTe2 layers were successfully grown on Si substrates by the close-spaced sublimation method. The Si substrates were confirmed to be etched during AgGaTe2 layer growth when the layer was grown directly on the substrate. To eliminate melt-back etching, a buffer layer of Ag2Te was introduced. It was found that the Ag2Te buffer layer changed into the AgGaTe2 layer during the growth process, and a uniform AgGaTe2 layer with an abrupt interface was formed. Both the diffusion of Ga into Ag2Te and the growth of AgGaTe2 occurred simultaneously. It was confirmed that uniform AgGaTe2 layers could be formed without any traces of the Ag2Te layer or melt-back etching by tuning the growth parameters. A solar cell was also fabricated using the p-AgGaTe2/n-Si heterojunction. This solar cell showed conversion efficiency of approximately 3%.

  15. Controlling optical polarization of {11-22} semipolar multiple quantum wells using relaxed underlying InGaN buffer layers

    NASA Astrophysics Data System (ADS)

    Okada, Narihito; Okamura, Yasuhiro; Uchida, Katsumi; Tadatomo, Kazuyuki

    2016-08-01

    We successfully fabricated {11-22} multiple quantum wells (MQWs) having different emission peak wavelengths on partially or completely relaxed thick InGaN buffer layers with different In contents formed on a semipolar {11-22} GaN layer, which was grown on a patterned r-plane sapphire substrate. The polarization properties changed significantly with changing in In content and thickness for InGaN buffer layer. For the same In content of the InGaN buffer layer, the optical polarization changed with an increase in the thickness of the underlying InGaN buffer layer, indicating a change in the relaxation ratio of the InGaN buffer layer. Similarly, for the same thickness of the InGaN buffer layer, the optical polarization changed by changing In content of the InGaN buffer layer. Thus, the degree of optical polarization could be controlled by varying the In content of the underlying InGaN buffer layer.

  16. Studies on the Properties of Organic Photovoltaic Cells Using TiOx and DMDCNQI as Double Buffer Layers.

    PubMed

    Kim, Gyu Min; Han, Seong Hun; Oh, Se Young

    2015-02-01

    Various types of n-type buffer layers have been used in organic electronic devices. These buffer layers turned out to expedite carrier injection and reduce series resistance, leading to good performance of organic electronic devices. In our current work, we have fabricated organic photovoltaic (OPV) cells consisting of ITO/PEDOT:PSS/P3HT:PCBM/TiOx/DMDCNQI/AI which were fabricated in the presence of air. To incorporate the individual advantages of each n-type buffer layer, a DMDCNQI and TiOx layers were inserted to act as n-type double buffer layers. This leads to an increase of short-circuit current (JSC) and fill factor (FF) with good stability, in comparison to P3HT:PCBM based conventional cells. The results imply that the structures of double buffer layers can provide possible alternative to achieving high performance and air durability.

  17. Formation of CeO 2 buffer layer using multi-plume PLD

    NASA Astrophysics Data System (ADS)

    Sutoh, Y.; Nakaoka, K.; Miura, M.; Matsuda, J.; Nakanishi, T.; Nakai, A.; Yoshizumi, M.; Izumi, T.; Miyata, S.; Iijima, Y.; Yamada, Y.; Shiohara, Y.; Saitoh, T.

    2008-09-01

    The CeO 2 buffer layer was fabricated using the multi-plume pulsed laser deposition (PLD) method with different deposition rates controlled by the excimer laser energy and frequency on the Gd 2Zr 2O 7 template tape formed by the ion-beam assisted deposition (IBAD) with 14° of Δ φ (full width at half maximum (FWHM) value of X-ray diffraction φ-scan for Gd 2Zr 2O 7 (2 2 2) pole). The laser conditions with high pulse energy and low frequency resulted in a highly textured in-plane grain alignment (Δ φ). The surface roughness and Δ φ values were improved by increasing the thickness of the CeO 2 buffer layer. YBCO films with the thickness of 1 μm and 1.6 μm were further deposited by the advanced trifluoroacetates-metal organic deposition (TFA-MOD) on the CeO 2 buffered substrates with the deposition rate of 0.15 and 0.5 μm/min. The Jc values of 2.5 MA/cm 2 and 2 MA/cm 2 were obtained, respectively. High Jc films could be deposited on the CeO 2 buffer layer even at high deposition rate by the multi-plume deposition.

  18. From front contact to back contact in cadmium telluride/cadmium sulfide solar cells: Buffer layer and interfacial layer

    NASA Astrophysics Data System (ADS)

    Roussillon, Yann

    Cadmium telluride (CdTe) polycrystalline thin film solar cells, with their near optimum direct band-gap of 1.4 eV matching almost perfectly the sun radiation spectrum, are a strong contender as a less expensive alternative, among photovoltaic materials, than the more commonly used silicon-based cells. Polycrystalline solar cells are usually deposited over large areas. Such devices often exhibit strong fluctuations (nonuniformities) in electronic properties, which originate from deposition and post-deposition processes, and are detrimental to the device performance. Therefore their effects need to be constrained. A new approach in this work was, when a CdS/CdTe solar cell is exposed to light and immersed in a proper electrolyte, fluctuations in surface potential can drive electrochemical reactions which result in a nonuniform interfacial layer that could balance the original nonuniformity. This approach improved the device efficiency for CdS/CdTe photovoltaic devices from 1--3% to 11--12%. Cadmium sulfide (CdS), used as a window layer and heterojunction partner to CdTe, is electrically inactive and absorb light energies above its band-gap of 2.4 eV. Therefore, to maximize the device efficiency, a thin US layer needs to be used. However, more defects, such as pinholes, are likely to be present in the film, leading to shunts. A resistive transparent layer, called buffer layer, is therefore deposited before CdS. A key observation was that the open-circuit voltage (Voc) for cells made using a buffer layer was high, around 800 mV, similar to cells without buffer layer after Cu doping. The standard p-n junction theory cannot explain this phenomena, therefore an alternative junction mechanism, similar to metal-insulator-semiconductor devices, was developed. Furthermore, alternative Cu-free back-contacts were used in conjunction with a buffer layer. The Voc of the devices was found to be dependent of the back contact used. This change occurs as the back-contact junction

  19. Improved performance of microcrystalline silicon solar cell with graded-band-gap silicon oxide buffer layer

    NASA Astrophysics Data System (ADS)

    Shi, Zhen-Liang; Ji, Yun; Yu, Wei; Yang, Yan-Bin; Cong, Ri-Dong; Chen, Ying-Juan; Li, Xiao-Wei; Fu, Guang-Sheng

    2015-07-01

    Microcrystalline silicon (μc-Si:H) solar cell with graded band gap microcrystalline silicon oxide (μc-SiOx:H) buffer layer is prepared by plasma enhanced chemical vapor deposition and exhibits improved performance compared with the cell without it. The buffer layer moderates the band gap mismatch by reducing the barrier of the p/i interface, which promotes the nucleation of the i-layer and effectively eliminates the incubation layer, and then enhances the collection efficiency of the cell in the short wavelength region of the spectrum. The p/i interface defect density also decreases from 2.2 × 1012 cm-2 to 5.0 × 1011 cm-2. This graded buffer layer allows to simplify the deposition process for the μc-Si:H solar cell application. Project supported by the Key Basic Research Project of Hebei Province, China (Grant Nos. 12963930D and 12963929D), the Natural Science Foundation of Hebei Province, China (Grant Nos. F2013201250 and E2012201059), and the Science and Technology Research Projects of the Education Department of Hebei Province, China (Grant No. ZH2012030).

  20. Magnetooptical and crystalline properties of sputtered garnet ferrite film on spinel ferrite buffer layer

    NASA Astrophysics Data System (ADS)

    Furuya, Akinori; Sasaki, Ai-ichiro; Morimura, Hiroki; Kagami, Osamu; Tanabe, Takaya

    2016-09-01

    The purpose of this study is to provide garnet films for volumetric magnetic holography. Volumetric magnetic holography usually employs an easily obtainable short-wavelength laser (visible light, not infrared light) with a large diffraction intensity. Bi-substituted garnet ferrite with a large Faraday rotation is promising for volumetric magnetic holography applications in the visible light region. However, a garnet film without a deteriorated layer must be obtained because a deteriorated layer (minute polycrystalline grains containing an amorphous phase) is formed during the initial deposition on a glass substrate. In particular, the required magnetooptical properties have not been obtained in a thin garnet film (100 nm or less) after annealing (1 h, 700 °C, oxygen atmosphere). Therefore, there is a need for excellent garnet films with the required magnetooptical (MO) properties even if the films are thin. By using a spinel ferrite buffer layer for garnet film deposition, we could obtain a thin garnet film with excellent MO properties. We determined the effect of the initial buffer layer on the crystallinity of the deposited garnet films by observing the film cross section. In addition, we undertook a qualitative estimation of the influence of the crystallinity and optical properties of the garnet film on a glass substrate with a spinel ferrite buffer layer.

  1. Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage

    SciTech Connect

    Bajaj, Sanyam Hung, Ting-Hsiang; Akyol, Fatih; Nath, Digbijoy; Rajan, Siddharth

    2014-12-29

    We report on the potential of high electron mobility transistors (HEMTs) consisting of high composition AlGaN channel and barrier layers for power switching applications. Detailed two-dimensional (2D) simulations show that threshold voltages in excess of 3 V can be achieved through the use of AlGaN channel layers. We also calculate the 2D electron gas mobility in AlGaN channel HEMTs and evaluate their power figures of merit as a function of device operating temperature and Al mole fraction in the channel. Our models show that power switching transistors with AlGaN channels would have comparable on-resistance to GaN-channel based transistors for the same operation voltage. The modeling in this paper shows the potential of high composition AlGaN as a channel material for future high threshold enhancement mode transistors.

  2. Ultraviolet-ozone-treated PEDOT:PSS as anode buffer layer for organic solar cells.

    PubMed

    Su, Zisheng; Wang, Lidan; Li, Yantao; Zhao, Haifeng; Chu, Bei; Li, Wenlian

    2012-08-17

    Ultraviolet-ozone-treated poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)was used as the anode buffer layer in copper phthalocyanine (CuPc)/fullerene-based solar cells. The power conversion efficiency of the cells with appropriated UV-ozone treatment was found to increase about 20% compared to the reference cell. The improved performance is attributed to the increased work function of the PEDOT:PSS layer, which improves the contact condition between PEDOT:PSS and CuPc, hence increasing the extraction efficiency of the photogenerated holes and decreasing the recombination probability of holes and electrons in the active organic layers.

  3. Surface Roughness and Dislocation Distribution in Compositionally Graded Relaxed SiGe Buffer Layer with Inserted Strained Si Layers

    NASA Astrophysics Data System (ADS)

    Yoon, Tae-Sik

    2005-03-01

    We report the experimental investigation of surface roughness and dislocation distribution of 1 μm-thick, compositionally graded, relaxed SiGe buffer layer with a final Ge surface content of 30%. Tensile-strained Si layers are inserted at various locations in the graded buffer during SiGe epitaxial growths. Slight reduction in surface roughness from about 10.3 nm to about 7.8 nm by inserting two 20 nm thick tensile-strained Si layers followed by SiGe growths. It turns out that majority of the residual surface roughness is developed during the SiGe growths on top of the topmost strain Si layer. The surface immediately after the growth of tensile strained Si is very flat with about 1.1 nm RMS roughness and without crosshatch morphology. Cross-sectional TEM shows clear signs of increased interaction between dislocation half-loops at the top surface of the strained Si layers. Our observation shows that although thin Si layers under tensile-strain are effective in reducing cross-hatch, they could in the meantime impede dislocation propagation leading to higher threading dislocation density. Considerations for an optimized scheme exploiting the flattening function of tensile-strained layers will be discussed.

  4. Solution-processed In2S3 buffer layer for chalcopyrite thin film solar cells

    NASA Astrophysics Data System (ADS)

    Wang, Lan; Lin, Xianzhong; Ennaoui, Ahmed; Wolf, Christian; Lux-Steiner, Martha Ch.; Klenk, Reiner

    2016-02-01

    We report a route to deposit In2S3 thin films from air-stable, low-cost molecular precursor inks for Cd-free buffer layers in chalcopyrite-based thin film solar cells. Different precursor compositions and processing conditions were studied to define a reproducible and robust process. By adjusting the ink properties, this method can be applied in different printing and coating techniques. Here we report on two techniques, namely spin-coating and inkjet printing. Active area efficiencies of 12.8% and 12.2% have been achieved for In2S3-buffered solar cells respectively, matching the performance of CdS-buffered cells prepared with the same batch of absorbers.

  5. Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers

    DOEpatents

    Norman, Andrew

    2016-08-23

    A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a silicon substrate using a compliant buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The compliant buffer material and semiconductor materials may be deposited using coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The coincident site lattice matching epitaxial process, as well as the use of a ductile buffer material, reduce the internal stresses and associated crystal defects within the deposited semiconductor materials fabricated using the disclosed method. As a result, the semiconductor devices provided herein possess enhanced performance characteristics due to a relatively low density of crystal defects.

  6. Performance of organic photovoltaics using an ytterbium trifluoride n-type buffer layer

    NASA Astrophysics Data System (ADS)

    Ji, Chan Hyuk; Jang, Ji Min; Oh, Se Young

    2016-03-01

    Ytterbium trifluoride (YbF3) was used as an n-type cathode buffer layer in conventional poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester (P3HT:PC60BM) bulk heterojunction (BHJ) organic photovoltaic cells. This buffer layer acts as an electron-transport layer and improves the open circuit voltage ( V oc), power conversion efficiency (PCE), and interfacial durability of the device. The physical properties and performance of the device were studied using impedance spectroscopy, photocurrent measurements, ultraviolet photoelectron spectroscopy, and atomic force microscopy. The PCE reached to 3.2% with a 65% fill factor under 1 sun irradiation. The PCE decreased to half of its original value after 120 h at room temperature in air or 24 h at 70°C in air. Comparison with Yb and TiOx cathode buffer layers reveals that YbF3 has superior performance and longevity. These findings suggest that YbF3 has the potential to replace costly device encapsulation. [Figure not available: see fulltext.

  7. Electron dynamics of the buffer layer and bilayer graphene on SiC

    SciTech Connect

    Shearer, Alex J.; Caplins, Benjamin W.; Suich, David E.; Harris, Charles B.; Johns, James E.; Hersam, Mark C.

    2014-06-09

    Angle- and time-resolved two-photon photoemission (TPPE) was used to investigate electronic states in the buffer layer of 4H-SiC(0001). An image potential state (IPS) series was observed on this strongly surface-bound buffer layer, and dispersion measurements indicated free-electron-like behavior for all states in this series. These results were compared with TPPE taken on bilayer graphene, which also show the existence of a free-electron-like IPS series. Lifetimes for the n = 2, and n = 3 states were obtained from time-resolved TPPE; slightly increased lifetimes were observed in the bilayer graphene sample for the n = 2 the n = 3 states. Despite the large band gap of graphene at the center of the Brillouin zone, the lifetime results demonstrate that the graphene layers do not behave as a simple tunneling barrier, suggesting that the buffer layer and graphene overlayers play a direct role in the decay of IPS electrons.

  8. All solution processable organic photovoltaic cells using DMDCNQI as an organic N-type buffer layer.

    PubMed

    Yang, Eui Yeol; So, Byoung Min; Chung, Chan Moon; Oh, Se Young

    2012-01-01

    Organic photovoltaic cells consisting of ITO/PEDOT-PSS/P3HT:PCBM/TiO(x)/DMDCNQI/Al have been fabricated by using dip-coated DMDCNQI layer as a cathode buffer material. We have investigated the physical effects of charge transfer complex and wettability of DMDCNQI between TiO(x)/P3HT:PCBM layer and Al cathode electrode on the performance of organic photovoltaic cell. The photovoltaic cell fabricated with a dip-coated DMDCNQI layer exhibited almost similar performance compared to the device using conventional evaporated DMDCNQI layer. Especially, the power conversion efficiency of the prepared organic photovoltaic cell using TiO(x)/DMDCNQI layer was improved to 3.1%, which is mainly due to the decrease in the low contact resistance of organic-metal interface.

  9. Improved nonlinear slot waveguides using dielectric buffer layers: properties of TM waves.

    PubMed

    Elsawy, Mahmoud M R; Renversez, Gilles

    2016-04-01

    We propose an improved version of the symmetric metal slot waveguides with a Kerr-type nonlinear dielectric core adding linear dielectric buffer layers between the metal regions and the core. Using a finite element method to compute the stationary nonlinear modes, we provide the full phase diagrams of its main transverse magnetic modes as a function of the total power, buffer layer, and core thicknesses that are more complex than the ones of the simple nonlinear metal slot. We show that these modes can exhibit spatial transitions toward specific modes of the new structure as a function of power. We also demonstrate that, for the main modes, the losses are reduced compared to the previous structures, and that they can now decrease with power. Finally, we describe the stability properties of the main stationary solutions using nonlinear FDTD simulations. PMID:27192282

  10. Selective growth of Pb islands on graphene/SiC buffer layers

    SciTech Connect

    Liu, X. T.; Miao, Y. P.; Ma, D. Y.; Hu, T. W.; Ma, F. E-mail: kwxu@mail.xjtu.edu.cn; Chu, Paul K.; Xu, K. W. E-mail: kwxu@mail.xjtu.edu.cn

    2015-02-14

    Graphene is fabricated by thermal decomposition of silicon carbide (SiC) and Pb islands are deposited by Pb flux in molecular beam epitaxy chamber. It is found that graphene domains and SiC buffer layer coexist. Selective growth of Pb islands on SiC buffer layer rather than on graphene domains is observed. It can be ascribed to the higher adsorption energy of Pb atoms on the 6√(3) reconstruction of SiC. However, once Pb islands nucleate on graphene domains, they will grow very large owing to the lower diffusion barrier of Pb atoms on graphene. The results are consistent with first-principle calculations. Since Pb atoms on graphene are nearly free-standing, Pb islands grow in even-number mode.

  11. Ultrathin Polyaniline-based Buffer Layer for Highly Efficient Polymer Solar Cells with Wide Applicability

    PubMed Central

    Zhao, Wenchao; Ye, Long; Zhang, Shaoqing; Fan, Bin; Sun, Mingliang; Hou, Jianhui

    2014-01-01

    Interfacial buffer layers often attribute the improved device performance in organic optoelectronic device. Herein, a water-soluble hydrochloric acid doped polyanilines (HAPAN) were utilized as p-type electrode buffer layer in highly efficient polymer solar cells (PSC) based on PBDTTT-EFT and several representative polymers. The PBDTTT-EFT-based conventional PSC featuring ultrathin HAPAN (1.3 nm) delivered high PCE approximately 9%, which is one of the highest values among conventional PSC devices. Moreover, ultrathin HAPAN also exhibited wide applicability in a variety of efficient photovoltaic polymers including PBDTTT-C-T, PTB7, PBDTBDD, PBTTDPP-T, PDPP3T and P3HT. The excellent performances were originated from the high transparency, small film roughness and suitable work function. PMID:25300365

  12. Effect of ZnO seed layer on the morphology and optical properties of ZnO nanorods grown on GaN buffer layers

    SciTech Connect

    Nandi, R. Mohan, S. Major, S. S.; Srinivasa, R. S.

    2014-04-24

    ZnO nanorods were grown by chemical bath deposition on sputtered, polycrystalline GaN buffer layers with and without ZnO seed layer. Scanning electron microscopy and X-ray diffraction show that the ZnO nanorods on GaN buffer layers are not vertically well aligned. Photoluminescence spectrum of ZnO nanorods grown on GaN buffer layer, however exhibits a much stronger near-band-edge emission and negligible defect emission, compared to the nanorods grown on ZnO buffer layer. These features are attributed to gallium incorporation at the ZnO-GaN interface. The introduction of a thin (25 nm) ZnO seed layer on GaN buffer layer significantly improves the morphology and vertical alignment of ZnO-NRs without sacrificing the high optical quality of ZnO nanorods on GaN buffer layer. The presence of a thick (200 nm) ZnO seed layer completely masks the effect of the underlying GaN buffer layer on the morphology and optical properties of nanorods.

  13. ZnS/Zn(O,OH)S-based buffer layer deposition for solar cells

    DOEpatents

    Bhattacharya, Raghu N.

    2009-11-03

    The invention provides CBD ZnS/Zn(O,OH)S and spray deposited ZnS/Zn(O,OH)S buffer layers prepared from a solution of zinc salt, thiourea and ammonium hydroxide dissolved in a non-aqueous/aqueous solvent mixture or in 100% non-aqueous solvent. Non-aqueous solvents useful in the invention include methanol, isopropanol and triethyl-amine. One-step deposition procedures are described for CIS, CIGS and other solar cell devices.

  14. High performance polymer solar cells with as-prepared zirconium acetylacetonate film as cathode buffer layer.

    PubMed

    Tan, Zhan'ao; Li, Shusheng; Wang, Fuzhi; Qian, Deping; Lin, Jun; Hou, Jianhui; Li, Yongfang

    2014-01-01

    Low-work-function active metals are commonly used as cathode in polymer solar cells (PSCs), but sensitivity of the active metals towards moisture and oxygen results in poor stability of the devices. Therefore, solution-proceessable and stable cathode buffer layer is of great importance for the application of PSCs. Here we demonstrate high performance PSCs by employing as-prepared zirconium acetylacetonate (a-ZrAcac) film spin-cast from its ethanol solution as cathode buffer layer. The PSCs based on a low bandgap polymer PBDTBDD as donor and PC60BM as acceptor with a-ZrAcac/Al cathode demonstrated an average power conversion efficiency (PCE) of 8.75% which is significantly improved than that of the devices with traditional Ca/Al cathode. The improved photovoltaic performance is benefitted from the decreased series resistance and enhanced light harvest of the PSCs with the a-ZrAcac/Al cathode. The results indicate that a-ZrAcac is a promising high performance cathode buffer layer for fabricating large area flexible PSCs. PMID:24732976

  15. Performance enhancement in inverted solar cells by interfacial modification of ZnO nanoparticle buffer layer.

    PubMed

    Ambade, Swapnil B; Ambade, Rohan B; Kim, Seojin; Park, Hanok; Yoo, Dong Jin; Leel, Soo-Hyoung

    2014-11-01

    Polymer solar cells (PSCs) have attracted increasing attention in recent years. The rapid progress and mounting interest suggest the feasibility of PSC commercialization. However, critical issues such as stability and the weak nature of their interfaces posses quite a challenge. In the context of improving stability, PSCs with inverted geometry consising of inorganic oxide layer acting as an n-buffer offer quite the panacea. Zinc oxide (ZnO) is one of the most preferred semiconducting wide band gap oxides as an efficient cathode layer that effectively extracts and transports photoelectrons from the acceptor to the conducting indium-doped tin oxide (ITO) due to its high conductivity and transparency. However, the existence of a back charge transfer from metal oxides to electron-donating conjugated polymer and poor contact with the bulk heterojunction (BHJ) active layer results in serious interfacial recombination and leads to relatively low photovoltaic performance. One approach to improving the performance and charge selectivity of these types of inverted devices consists of modifying the interface between the inorganic metal oxide (e.g., ZnO) and organic active layer using a sub-monolayer of interfacial materials (e.g., functional dyes). In this work, we demonstrate that the photovoltaic parameters of inverted solar cells comprising a thin overlayer of functional dyes over ZnO nanoparticle as an n-buffer layer are highly influenced by the anchoring groups they possess. While an inverted PSC containing an n-buffer of only ZnO exhibited an overall power conversion efficiency (PCE) of 2.87%, the devices with an interlayer of dyes containing functional cyano-carboxylic, cyano-cyano, and carboxylic groups exhibited PCE of 3.52%, 3.39%, and 3.21%, respectively, due to increased forward charge collection resulting from enhanced electronic coupling between the ZnO and BHJ active layers. PMID:25958563

  16. Improvement of the interfacial Dzyaloshinskii-Moriya interaction by introducing a Ta buffer layer

    SciTech Connect

    Kim, Nam-Hui; Jung, Jinyong; Cho, Jaehun; You, Chun-Yeol; Han, Dong-Soo; Kim, June-Seo Swagten, Henk J. M.

    2015-10-05

    We report systematic measurements of the interfacial Dzyaloshinskii-Moriya interaction (iDMI) by employing Brillouin light scattering in Pt/Co/AlO{sub x} and Ta/Pt/Co/AlO{sub x} structures. By introducing a tantalum buffer layer, the saturation magnetization and the interfacial perpendicular magnetic anisotropy are significantly improved due to the better interface between heavy metal and ferromagnetic layer. From the frequency shift between Stokes- and anti-Stokes spin-waves, we successively obtain considerably larger iDM energy densities (D{sub max} = 1.65 ± 0.13 mJ/m{sup 2} at t{sub Co} = 1.35 nm) upon adding the Ta buffer layer, despite the nominally identical interface materials. Moreover, the energy density shows an inverse proportionality with the Co layer thickness, which is the critical clue that the observed iDMI is indeed originating from the interface between the Pt and Co layers.

  17. Development of Solution Buffer Layers for RABiTS Based YBCO Coated Conductors

    SciTech Connect

    Paranthaman, Mariappan Parans; Qiu, Xiaofeng; Kim, Kyunghoon; Shi, D.; Zhang, Yifei; Li, Xiaoping; Sathyamurthy, Srivatsan; Thieme, C. L. H.; Rupich, M. W.

    2010-01-01

    The main objective of this research is to find a suitable alternate solution based seed layer for the standard RABiTS three-layer architecture of physical vapor deposited CeO2 cap/YSZ barrier/Y2O3 seed on Ni-5%W metal tape. In the present work, we have identified CeO2 buffer layer as a potential replacement for Y2O3 seeds. Using a metal-organic deposition (MOD) process, we have grown smooth, crack-free, epitaxial thin films of CeO2 (both pure and Zr, Cu and Gd-doped) directly on biaxially textured Ni-5W substrates in short lengths. Detailed XRD studies indicate that a single epitaxial CeO2 phase with slightly improved out-of-plane texture compared to the texture of underlying Ni-W substrates can be achieved in pure, undoped CeO2 samples. We have also demonstrated the growth of YSZ barrier layers on pure CeO2 seeds using sputtering. Both sputtered CeO2 cap layers and MOD-YBCO films were grown epitaxially on these YSZ-buffered MOD-CeO2/Ni-5W substrates. High critical currents per unit width, Ic of 264 A/cm (critical current density, Jc of 3.3 MA/cm2) at 77 K and 0.01 T was achieved for 0.8 m thick MOD-YBCO films grown on MOD-CeO2 seeds. These results indicate that CeO2 films can be grown directly on Ni-5W substrates and still support high performance YBCO coated conductors. This work holds promise for a route for producing low-cost buffer architecture for RABiTS based YBCO coated conductors.

  18. Development of Solution Buffer Layers for RABiTS Based YBCO Coated Conductors

    SciTech Connect

    Paranthaman, Mariappan Parans; Qiu, Xiaofeng; List III, Frederick Alyious; Zhang, Yifei; Li, Xiaoping; Sathyamurthy, Srivatsan; Thieme, C. L. H.; Rupich, M. W.

    2011-01-01

    Abstract The main objective of this research is to find a suitable alternate solution based seed layer for the standard RABiTS three-layer architecture of physical vapor deposited CeO cap/YSZ barrier/Y O seed on Ni-5%W metal tape. In the present work, we have identified CeO buffer layer as a potential replacement for Y O seeds. Using a metal-organic deposition (MOD) process, we have grown smooth, crack-free, epitaxial thin films of CeO (pure and Zr, Cu and Gd-doped) directly on biaxially textured Ni-5W substrates in short lengths. Detailed XRD studies indicate that a single epitaxial CeO phase with slightly improved out-of-plane texture compared to the texture of the underlying Ni-W substrates can be achieved in pure, undoped CeO samples. We have also demonstrated the growth of YSZ barrier layers on pure CeO seeds using sputtering. Both sputtered CeO cap layers and MOD-YBCO films were grown epitaxially on these YSZ-buffered MOD-CeO /Ni-5W substrates. High critical currents per unit width, of 264 A/cm (critical current density, of 3.3 MA/cm ) at 77 K and 0.01 T was achieved for 0.8 m thick MOD-YBCO films grown on MOD-CeO seeds. These results indicate that CeO films can be grown directly on Ni-5W substrates and still support high performance YBCO coated conductors. This work holds promise for a route for producing low-cost buffer architecture for RABiTS based YBCO coated conductors.

  19. The effect of the MgO buffer layer thickness on magnetic anisotropy in MgO/Fe/Cr/MgO buffer/MgO(001)

    NASA Astrophysics Data System (ADS)

    Kozioł-Rachwał, Anna; Nozaki, Takayuki; Zayets, Vadym; Kubota, Hitoshi; Fukushima, Akio; Yuasa, Shinji; Suzuki, Yoshishige

    2016-08-01

    The relationship between the magnetic properties and MgO buffer layer thickness d was studied in epitaxial MgO/Fe(t)/Cr/MgO(d) layers grown on MgO(001) substrate in which the Fe thickness t ranged from 0.4 nm to 1.1 nm. For 0.4 nm ≤ t ≤ 0.7 nm, a non-monotonic coercivity dependence on the MgO buffer thickness was shown by perpendicular magneto-optic Kerr effect magnetometry. For thicker Fe films, an increase in the buffer layer thickness resulted in a spin reorientation transition from perpendicular to the in-plane magnetization direction. Possible origins of these unusual behaviors were discussed in terms of the suppression of carbon contamination at the Fe surface and changes in the magnetoelastic anisotropy in the system. These results illustrate a method to control magnetic anisotropy in MgO/Fe/Cr/MgO(d) via an appropriate choice of MgO buffer layer thickness d.

  20. Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs

    SciTech Connect

    Coerekci, S.; Oeztuerk, M. K.; Yu, Hongbo; Cakmak, M.; Oezcelik, S.; Oezbay, E.

    2013-06-15

    Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The buffer improves the microstructural quality of GaN epilayer and reduces approximately one order of magnitude the edge-type threading dislocation density. As expected, the buffer also leads an atomically flat surface with a low root-mean-square of 0.25 nm and a step termination density in the range of 10{sup 8} cm{sup -2}. Due to the high-temperature buffer layer, no change on the strain character of the GaN and AlGaN epitaxial layers has been observed. Both epilayers exhibit compressive strain in parallel to the growth direction and tensile strain in perpendicular to the growth direction. However, an high-temperature AlN buffer layer on sapphire substrate in the HEMT structure reduces the tensile stress in the AlGaN layer.

  1. Buffer layers for deposition of superconducting YBaCuO thin film on polycrystalline diamond

    NASA Astrophysics Data System (ADS)

    Beetz, Charles P.; Cui, G. J.; Lincoln, B. A.; Kirlin, Peter S.

    1992-09-01

    In an attempt to combine the properties of high temperature superconductors with the high thermal conductivity and low specific heat of diamond, we have explored the deposition of in- situ YBa(subscript 2)Cu(subscript 3)O(subscript 7-(delta) ) (YBCO) superconducting films on polycrystalline diamond thin films. We demonstrate for the first time superconducting YBCO films on diamond employing multiple layer buffer layer systems. Three different composite buffer layer systems were explored for this purpose: (1) Diamond/Zr/YSZ/YBCO, (2) Diamond/Si(subscript 3)N(subscript 4)/YSZ/YBCO, and (3) Diamond/SiO(subscript 2)/YSZ/YBCO. Adherent thin Zr films were deposited by dc sputtering on the diamond films at 450 to 820 degree(s)C. The yttria stabilized zirconia (YSZ) was deposited by reactive RF sputtering at 680 to 750 degree(s)C. The Si(subscript 3)N(subscript 4) and SiO(subscript 2) were also deposited by on-axis RF sputtering at 400 to 700 degree(s)C. YBCO films were grown on the buffer layers by off-axis RF sputtering at substrate temperatures between 690 degree(s)C and 750 degree(s)C. In all cases, the as-deposited YBCO films were superconducting above 77 K. This demonstration enables the fabrication of low heat capacity, fast response time bolometric far IR detectors and paves the way for the use of HTSC as a high frequency interconnect metallization on thick diamond film based multichip modules.

  2. Fibronectin layers by matrix-assisted pulsed laser evaporation from saline buffer-based cryogenic targets.

    PubMed

    Sima, F; Davidson, P; Pauthe, E; Sima, L E; Gallet, O; Mihailescu, I N; Anselme, K

    2011-10-01

    The deposition of fibronectin (FN) from saline buffer-based cryogenic targets by matrix-assisted pulsed laser evaporation (MAPLE) onto silicon substrates is reported. A uniform distribution of FN was revealed by Ponceau staining after control experiments on nitrocellulose paper. Well-organized particulates with heights from hundreds of nanometers up to more than 1 μm packed in homogeneous layers were evidenced by optical microscopy and profilometry on Si substrates. Atomic force microscopy images showed regions composed of buffer and FN aggregates forming a compact film. Comparison of infrared spectra of drop-cast and MAPLE-deposited FN confirmed the preservation of composition and showed no degradation of the protein. The protein deposition on Si was confirmed by antibody staining. Small aggregates and fluorescent fibrils were visualized by fluorescence microscopy. Superior attachment of human osteoprogenitor cells cultivated for 3 h proved the presence of stable and intact FN molecules after transfer.

  3. Buffer Layer Effects on Tandem InGaAs TPV Devices

    NASA Technical Reports Server (NTRS)

    Wilt, David M.; Wehrer, Rebecca J.; Maurer, William F.

    2004-01-01

    Single junction indium gallium arsenide (InGaAs) based TPV devices have demonstrated efficiencies in excess of 20% at radiator temperatures of 1058 C. Modeling suggests that efficiency improvements in single bandgap devices should continue although they will eventually plateau. One approach for extending efficiencies beyond the single bandgap limit is to follow the technique taken in the solar cell field, namely tandem TPV cells. Tandem photovoltaic devices are traditionally composed of cells of decreasing bandgap, connected electrically and optically in series. The incident light impinges upon the highest bandgap first. This device acts as a sieve, absorbing the high-energy photons, while allowing the remainder to pass through to the underlying cell(s), and so on. Tandem devices reduce the energy lost to overexcitation as well as reducing the current density (Jsc). Reduced Jsc results in lower resistive losses and enables the use of thinner and lower doped lateral current conducting layers as well as a higher pitch grid design. Fabricating TPV tandem devices utilizing InGaAs for all of the component cells in a two cell tandem necessitates the inclusion of a buffer layer in-between the high bandgap device (In0.53 Ga0.47As - 0.74eV) and the low bandgap device (In0.66Ga0.34As - 0.63eV) to accommodate the approximately 1% lattice strain generated due to the change in InGaAs composition. To incorporate only a single buffer layer structure, we have investigated the use of the indium phosphide (InP) substrate as a superstrate. Thus the high-bandgap, lattice- matched device is deposited first, followed by the buffer structure and the low-bandgap cell. The near perfect transparency of the high bandgap (1.35eV) iron-doped InP permits the device to be oriented such that the light enters through the substrate. In this paper we examine the impact of the buffer layer on the underlying lattice-matched InGaAs device. 0.74eV InGaAs devices were produced in a variety of

  4. ZnO buffer layer for metal films on silicon substrates

    DOEpatents

    Ihlefeld, Jon

    2014-09-16

    Dramatic improvements in metallization integrity and electroceramic thin film performance can be achieved by the use of the ZnO buffer layer to minimize interfacial energy between metallization and adhesion layers. In particular, the invention provides a substrate metallization method utilizing a ZnO adhesion layer that has a high work of adhesion, which in turn enables processing under thermal budgets typically reserved for more exotic ceramic, single-crystal, or metal foil substrates. Embodiments of the present invention can be used in a broad range of applications beyond ferroelectric capacitors, including microelectromechanical systems, micro-printed heaters and sensors, and electrochemical energy storage, where integrity of metallized silicon to high temperatures is necessary.

  5. SrO(001) on graphene: a universal buffer layer for integration of complex oxides

    NASA Astrophysics Data System (ADS)

    Ahmed, Adam; Wen, Hua; Pinchuk, Igor; Zhu, Tiancong; Kawakami, Roland

    2015-03-01

    We report the successful growth of high-quality crystalline SrO on highly-ordered pyrolytic graphite (HOPG) and single layer graphene by molecular beam epitaxy. The epitaxial SrO layers have (001) orientation as confirmed by x-ray diffraction (XRD), and atomic force microscopy measurements show rms surface roughness of optimal films to be 1.2 Å. Transport measurements of exfoliated graphene after SrO deposition show a strong dependence between the Dirac point and Sr oxidation. To show the utility of SrO as a buffer layer for complex oxide integration, we grew perovskite crystal SrTiO3 on SrO, and it was also confirmed to have (001) orientation from x-ray diffraction. This materials advancement opens the door to integration of many other complex oxides to explore novel correlated electron physics in graphene.

  6. Lattice-matched HfN buffer layers for epitaxy of GaN on Si

    SciTech Connect

    Armitage, Robert; Yang, Qing; Feick, Henning; Gebauer, Joerg; Weber, Eicke R.; Shinkai, Satoko; Sasaki, Katsutaka

    2002-05-08

    Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using sputter-deposited hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 (mu)m. Initial results for GaN grown on the (111) surface show a photoluminescence peak width of 17 meV at 11 K, and an asymmetric x-ray rocking curve width of 20 arcmin. Wurtzite GaN on HfN/Si(001) shows reduced structural quality and peculiar low-temperature luminescence features. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

  7. Prostate specific antigen detection using AlGaN /GaN high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Kang, B. S.; Wang, H. T.; Lele, T. P.; Tseng, Y.; Ren, F.; Pearton, S. J.; Johnson, J. W.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.

    2007-09-01

    Antibody-functionalized Au-gated AlGaN /GaN high electron mobility transistors (HEMTs) were used to detect prostate specific antigen (PSA). The PSA antibody was anchored to the gate area through the formation of carboxylate succinimdyl ester bonds with immobilized thioglycolic acid. The AlGaN /GaN HEMT drain-source current showed a rapid response of less than 5s when target PSA in a buffer at clinical concentrations was added to the antibody-immobilized surface. The authors could detect a wide range of concentrations from 10pg/mlto1μg/ml. The lowest detectable concentration was two orders of magnitude lower than the cutoff value of PSA measurements for clinical detection of prostate cancer. These results clearly demonstrate the promise of portable electronic biological sensors based on AlGaN /GaN HEMTs for PSA screening.

  8. Structure, Optical Absorption, and Performance of Organic Solar Cells Improved by Gold Nanoparticles in Buffer Layers.

    PubMed

    Yang, Yingguo; Feng, Shanglei; Li, Meng; Wu, Zhongwei; Fang, Xiao; Wang, Fei; Geng, Dongping; Yang, Tieying; Li, Xiaolong; Sun, Baoquan; Gao, Xingyu

    2015-11-11

    11-Mercaptoundecanoic acid (MUA)-stabilized gold nanoparticles (AuNPs) embedded in copper phthalocyanine (CuPc) were used as a buffer layer between a poly(3-hexyl-thiophene) (P3HT)/[6,6]-phenyl C61-butyric acid methyl ester (PCBM) bulk heterojunction and anodic indium-tin oxide (ITO) substrate. As systematic synchrotron-based grazing incidence X-ray diffraction (GIXRD) experiments demonstrated that the AuNPs present in the buffer layer can improve the microstructure of the active layer with a better lamella packing of P3HT from the surface to the interior, UV-visible absorption spectrum measurements revealed enhanced optical absorption due to the localized surface plasma resonance (LSPR) generated by the AuNPs. The device of ITO/poly(3,4-ethylenedioxythiophene):polystyrenesulfonate/CuPc:MUA-stabilized AuNPs/P3HT:PCBM/LiF/Al was found with over 24% enhancement of power conversion efficiency (PCE) in comparison with reference devices without AuNPs. This remarkable improvement in PCE should be partially attributed to LSPR generated by the AuNPs and partially to improved crystallization as well as preferred orientation order of P3HT due to the presence of the AuNPs, which would promote more applications of metal NPs in the organic photovoltaic devices and other organic multilayer devices. PMID:26477556

  9. Co-solvent enhanced zinc oxysulfide buffer layers in Kesterite copper zinc tin selenide solar cells.

    PubMed

    Steirer, K Xerxes; Garris, Rebekah L; Li, Jian V; Dzara, Michael J; Ndione, Paul F; Ramanathan, Kannan; Repins, Ingrid; Teeter, Glenn; Perkins, Craig L

    2015-06-21

    A co-solvent, dimethylsulfoxide (DMSO), is added to the aqueous chemical "bath" deposition (CBD) process used to grow ZnOS buffer layers for thin film Cu2ZnSnSe4 (CZTSe) solar cells. Device performance improves markedly as fill factors increase from 0.17 to 0.51 upon the co-solvent addition. X-ray photoelectron spectroscopy (XPS) analyses are presented for quasi-in situ CZTSe/CBD-ZnOS interfaces prepared under an inert atmosphere and yield valence band offsets equal to -1.0 eV for both ZnOS preparations. When combined with optical band gap data, conduction band offsets exceed 1 eV for the water and the water/DMSO solutions. XPS measurements show increased downward band bending in the CZTSe absorber layer when the ZnOS buffer layer is deposited from water only. Admittance spectroscopy data shows that the ZnOS deposited from water increases the built-in potential (Vbi) yet these solar cells perform poorly compared to those made with DMSO added. The band energy offsets imply an alternate form of transport through this junction. Possible mechanisms are discussed, which circumvent the otherwise large conduction band spike between CZTSe and ZnOS, and improve functionality with the low-band gap absorber, CZTSe (Eg = 0.96 eV). PMID:26000570

  10. Co-solvent enhanced zinc oxysulfide buffer layers in Kesterite copper zinc tin selenide solar cells.

    PubMed

    Steirer, K Xerxes; Garris, Rebekah L; Li, Jian V; Dzara, Michael J; Ndione, Paul F; Ramanathan, Kannan; Repins, Ingrid; Teeter, Glenn; Perkins, Craig L

    2015-06-21

    A co-solvent, dimethylsulfoxide (DMSO), is added to the aqueous chemical "bath" deposition (CBD) process used to grow ZnOS buffer layers for thin film Cu2ZnSnSe4 (CZTSe) solar cells. Device performance improves markedly as fill factors increase from 0.17 to 0.51 upon the co-solvent addition. X-ray photoelectron spectroscopy (XPS) analyses are presented for quasi-in situ CZTSe/CBD-ZnOS interfaces prepared under an inert atmosphere and yield valence band offsets equal to -1.0 eV for both ZnOS preparations. When combined with optical band gap data, conduction band offsets exceed 1 eV for the water and the water/DMSO solutions. XPS measurements show increased downward band bending in the CZTSe absorber layer when the ZnOS buffer layer is deposited from water only. Admittance spectroscopy data shows that the ZnOS deposited from water increases the built-in potential (Vbi) yet these solar cells perform poorly compared to those made with DMSO added. The band energy offsets imply an alternate form of transport through this junction. Possible mechanisms are discussed, which circumvent the otherwise large conduction band spike between CZTSe and ZnOS, and improve functionality with the low-band gap absorber, CZTSe (Eg = 0.96 eV).

  11. Optimization of CdS Buffer Layer for High Efficiency CIGS Solar Cells.

    PubMed

    Kim, Donguk; Jang, Yong-Jun; Jung, Ho-Sung; Kim, Minha; Baek, Dohyun; Yi, Junsin; Lee, Jaehyeong; Choi, Youngkwan

    2016-05-01

    In present work, effects of the thickness on the structural and optical properties of chemically deposited CdS thin films were investigated. In addition, we fabricated Cu(In, Ga)Se2 solar cells with various thicknesses of CdS buffer layer and optimized the thickness for a high efficiency. When the CdS thin films were thicker, the crystallinity improved but the transmittance decreased. The short-circuit current density (J(sc)) and the fill factor are the major efficiency limiting factors for the CIGS solar cells. As the thickness of the CdS buffer layer, the open-circuit voltage (V(oc)) and the fill factor increased, whereas the J(sc) slightly decreased. The improvement of the fill factor and thus efficiency resulted from larger shunt resistance. For the solar cells without a high resistive intrinsic ZnO layer, the highest efficiency was acquired at the thickness of 89 nm. With further increasing the thickness, the J(sc) decreased significantly, resulting in poor efficiency. PMID:27483874

  12. Electrical properties of n-type AlGaN with high Si concentration

    NASA Astrophysics Data System (ADS)

    Takeda, Kunihiro; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu

    2016-05-01

    The electrical properties of Si-doped AlGaN layers (AlN molar fractions: 0.03-0.06) with the donor concentrations (N D) from 8.8 × 1017 to 4.5 × 1020 cm-3 were investigated by variable-temperature Hall effect measurement using the van der Pauw method. A minimum resistivity of 3.6 × 10-4 Ω cm was obtained for Si-doped AlGaN with a smooth surface at room temperature. We found that the activation energy of the Si donor is affected by the Coulomb interaction in the AlGaN layer with N D values from 8.8 × 1017 to 2.5 × 1020 cm-3. In several AlGaN layers, the free-electron concentration did not vary with sample temperature, as expected in the case of degeneracy. The localization of GaN in the AlGaN layer was speculated as a cause of degeneracy of samples.

  13. Modified Lanthanum Zirconium Oxide buffer layers for low-cost, high performance YBCO coated conductors

    NASA Astrophysics Data System (ADS)

    Parans Paranthaman, M.; Sathyamurthy, S.; Li, Xiaoping; Specht, E. D.; Wee, S. H.; Cantoni, C.; Goyal, A.; Rupich, M. W.

    2010-03-01

    The pyrochlore Lanthanum Zirconium Oxide, La 2Zr 2O 7 (LZO), has been developed as a potential replacement barrier layer in the standard RABiTS three-layer architecture of physical vapor deposited CeO 2 cap/YSZ barrier/Y 2O 3 seed on Ni-5%W metal tape. The main focus of this research is to ascertain whether: (i) we can further improve the barrier properties of LZO; (ii) we can modify the LZO cation ratio and still achieve a high level of performance; and (iii) it is possible to reduce the number of buffer layers. We report a systematic investigation of the LZO film growth with varying compositions of La:Zr ratio in the La 2O 3-ZrO 2 system. Using a metal-organic deposition (MOD) process, we have grown smooth, crack-free, epitaxial thin films of La xZr 1-xO y ( x = 0.2-0.6) on standard Y 2O 3 buffered Ni-5W substrates in short lengths. Detailed XRD studies indicate that a single epitaxial LZO phase with only (0 0 1) texture can be achieved in a broad compositional range of x = 0.2-0.6 in La xZr 1-xO y. Both CeO 2 cap layers and MOD-YBCO films were grown epitaxially on these modified LZO barriers. High critical currents per unit width, Ic of 274-292 A/cm at 77 K and self-field were achieved for MOD-YBCO films grown on La xZr 1-xO y ( x = 0.4-0.6) films. These results indicate that LZO films can be grown with a broad compositional range and still support high performance YBCO coated conductors. In addition, epitaxial MOD La xZr 1-xO y ( x = 0.25) films were grown directly on biaxially textured Ni-3W substrates. About 3 μm thick YBCO films grown on a single MOD-LZO buffered Ni-3W substrates using pulsed laser deposition show a critical current density, Jc, of 0.55 MA/cm 2 ( Ic of 169 A/cm) at 77 K and 0.01 T. This work holds promise for a route for producing simplified buffer architecture for RABiTS based YBCO coated conductors.

  14. High mobility organic thin-film transistors based on p-p heterojunction buffer layer

    NASA Astrophysics Data System (ADS)

    Qian, Xianrui; Wang, Tong; Yan, Donghang

    2013-10-01

    The p-p heterojunction of 5, 6, 11, 12-tetraphenylnaphthacene/vanadyl phthalocyanine, which has been used as the buffer layer, is demonstrated. The highest field-effect mobility is 5.1 cm2/Vs, which is one of the highest reported for polycrystalline rubrene thin film transistors. Current versus voltage characteristics of heterojunction diodes are utilized to investigate the charge injection mechanism, revealing the factors that bring about the improvement of carrier injection and the reduction of contact resistance. These results suggest that our approach is very promising to fabricate high performance organic thin-film transistors for practical applications in organic electronics.

  15. Investigation of the thickness effect to impedance analysis results AlGaN acoustic sensor

    NASA Astrophysics Data System (ADS)

    Özen, Soner; Bilgiç, Eyüp; Gülmez, Gülay; Şenay, Volkan; Pat, Suat; Korkmaz, Şadan; Mohammadigharehbagh, Reza

    2016-03-01

    In this study, AlGaN acoustic sensors were deposited on aluminum metal substrate by thermionic vacuum arc (TVA) method, for the first time. Impedance analyses of the fabricated acoustic sensors were investigated for the determining of effect of the nano layer thickness. Thickness values are very close to each others. Fabricated sensors have been fabricated from AlGaN deposited on aluminum substrates. Gallium materials are used in many applications for optoelectronic device and semiconductor technology. Thermionic vacuum arc is the deposition technology for the variously materials and applications field. TVA production parameters and some properties of the deposited layers were investigated. TVA is the fast deposition technology for the gallium compounds and doped gallium compounds. Obtained results that AlGaN layer are very promising material for an acoustic sensor but also TVA is proper fast technology for the production.

  16. Uncovering the role of cathode buffer layer in organic solar cells

    PubMed Central

    Qi, Boyuan; Zhang, Zhi-Guo; Wang, Jizheng

    2015-01-01

    Organic solar cells (OSCs) as the third generation photovoltaic devices have drawn intense research, for their ability to be easily deposited by low-cost solution coating technologies. However the cathode in conventional OSCs, Ca, can be only deposited by thermal evaporation and is highly unstable in ambient. Therefore various solution processible cathode buffer layers (CBLs) are synthesized as substitute of Ca and show excellent effect in optimizing performance of OSCs. Yet, there is still no universal consensus on the mechanism that how CBL works, which is evidently a critical scientific issue that should be addressed. In this article detailed studies are targeted on the interfacial physics at the interface between active layer and cathode (with and without treatment of a polar CBL) by using ultraviolet photoelectron spectroscopy, capacitance-voltage measurement, and impedance spectroscopy. The experimental data demonstrate that CBL mainly takes effect in three ways: suppressing surface states at the surface of active layer, protecting the active layer from being damaged by thermally evaporated cathode, and changing the energy level alignment by forming dipole moments with active layer and/or cathode. Our findings here provide a comprehensive picture of interfacial physics in devices with and without CBL. PMID:25588623

  17. Uncovering the role of cathode buffer layer in organic solar cells.

    PubMed

    Qi, Boyuan; Zhang, Zhi-Guo; Wang, Jizheng

    2015-01-01

    Organic solar cells (OSCs) as the third generation photovoltaic devices have drawn intense research, for their ability to be easily deposited by low-cost solution coating technologies. However the cathode in conventional OSCs, Ca, can be only deposited by thermal evaporation and is highly unstable in ambient. Therefore various solution processible cathode buffer layers (CBLs) are synthesized as substitute of Ca and show excellent effect in optimizing performance of OSCs. Yet, there is still no universal consensus on the mechanism that how CBL works, which is evidently a critical scientific issue that should be addressed. In this article detailed studies are targeted on the interfacial physics at the interface between active layer and cathode (with and without treatment of a polar CBL) by using ultraviolet photoelectron spectroscopy, capacitance-voltage measurement, and impedance spectroscopy. The experimental data demonstrate that CBL mainly takes effect in three ways: suppressing surface states at the surface of active layer, protecting the active layer from being damaged by thermally evaporated cathode, and changing the energy level alignment by forming dipole moments with active layer and/or cathode. Our findings here provide a comprehensive picture of interfacial physics in devices with and without CBL. PMID:25588623

  18. Uncovering the role of cathode buffer layer in organic solar cells

    NASA Astrophysics Data System (ADS)

    Qi, Boyuan; Zhang, Zhi-Guo; Wang, Jizheng

    2015-01-01

    Organic solar cells (OSCs) as the third generation photovoltaic devices have drawn intense research, for their ability to be easily deposited by low-cost solution coating technologies. However the cathode in conventional OSCs, Ca, can be only deposited by thermal evaporation and is highly unstable in ambient. Therefore various solution processible cathode buffer layers (CBLs) are synthesized as substitute of Ca and show excellent effect in optimizing performance of OSCs. Yet, there is still no universal consensus on the mechanism that how CBL works, which is evidently a critical scientific issue that should be addressed. In this article detailed studies are targeted on the interfacial physics at the interface between active layer and cathode (with and without treatment of a polar CBL) by using ultraviolet photoelectron spectroscopy, capacitance-voltage measurement, and impedance spectroscopy. The experimental data demonstrate that CBL mainly takes effect in three ways: suppressing surface states at the surface of active layer, protecting the active layer from being damaged by thermally evaporated cathode, and changing the energy level alignment by forming dipole moments with active layer and/or cathode. Our findings here provide a comprehensive picture of interfacial physics in devices with and without CBL.

  19. Fabrication of YSZ buffer layer by single source MOCVD technique for YBCO coated conductor

    NASA Astrophysics Data System (ADS)

    Jun, Byung-Hyuk; Sun, Jong-Won; Kim, Ho-Jin; Lee, Dong-Wook; Jung, Choong-Hwan; Park, Soon-Dong; Kim, Chan-Joong

    2003-10-01

    Yttria stabilized zirconia (YSZ) buffer layers were deposited by a metal organic chemical vapor deposition technique using a single liquid source for the application of YBa 2Cu 3O 7- δ (YBCO) coated conductor. Y:Zr mole ratio was 0.2:0.8, and tetrahydrofuran (THF) was used as a solvent. The (1 0 0) single crystal MgO substrate was used for searching the deposition conditions. Bi-axially oriented CeO 2 and NiO films were fabricated on {1 0 0} <0 0 1> textured Ni substrate by the same method and used as templates. At a constant working pressure of 10 Torr, the deposition temperatures (660-800 °C) and oxygen flow rates (100-500 sccm) were changed to find the optimum deposition condition. The best (1 0 0) oriented YSZ film on MgO was obtained at 740 °C and O 2 flow rate of 300 sccm. For a YSZ buffer layer with this deposition condition on a CeO 2/Ni template, full width half maximum values of the in-plane ( ϕ-scan) and out-of-plane ( ω-scan) alignments were 10.6° and 9.8°, respectively. The SEM image of YSZ film on CeO 2/Ni showed surface morphologies without microcracks. The film deposition rate was about 100 nm/min.

  20. Buffer layers on metal surfaces having biaxial texture as superconductor substrates

    DOEpatents

    Paranthaman, Mariappan; Lee, Dominic F.; Kroeger, Donald M.; Goyal, Amit

    2000-01-01

    Buffer layer architectures are epitaxially deposited on biaxially-textured rolled substrates of nickel and/or copper and their alloys for high current conductors, and more particularly buffer layer architectures such as Y.sub.2 O.sub.3 /Ni, YSZ/Y.sub.2 O.sub.3 /Ni, RE.sub.2 O.sub.3 /Ni, (RE=Rare Earth), RE.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Ni, RE.sub.2 O.sub.3 /CeO.sub.2 /Ni, and RE.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Ni, Y.sub.2 O.sub.3 /Cu, YSZ/Y.sub.2 O.sub.3 /Cu, RE.sub.2 O.sub.3 /Cu, RE.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Cu, RE.sub.2 O.sub.3 /CeO.sub.2 /Cu, and RE.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Cu. Deposition methods include physical vapor deposition techniques which include electron-beam evaporation, rf magnetron sputtering, pulsed laser deposition, thermal evaporation, and solution precursor approaches, which include chemical vapor deposition, combustion CVD, metal-organic decomposition, sol-gel processing, and plasma spray.

  1. Calcium manganate: A promising candidate as buffer layer for hybrid halide perovskite photovoltaic-thermoelectric systems

    SciTech Connect

    Zhao, Pengjun; Wang, Hongguang; Kong, Wenwen; Xu, Jinbao Wang, Lei; Ren, Wei; Bian, Liang; Chang, Aimin

    2014-11-21

    We have systematically studied the feasibility of CaMnO{sub 3} thin film, an n-type perovskite, to be utilized as the buffer layer for hybrid halide perovskite photovoltaic-thermoelectric device. Locations of the conduction band and the valence band, spontaneous polarization performance, and optical properties were investigated. Results indicate the energy band of CaMnO{sub 3} can match up well with that of CH{sub 3}NH{sub 3}PbI{sub 3} on separating electron-hole pairs. In addition, the consistent polarization angle helps enlarge the open circuit voltage of the composite system. Besides, CaMnO{sub 3} film shows large absorption coefficient and low extinction coefficient under visible irradiation, demonstrating high carrier concentration, which is beneficial to the current density. More importantly, benign thermoelectric properties enable CaMnO{sub 3} film to assimilate phonon vibration from CH{sub 3}NH3PbI{sub 3}. All the above features lead to a bright future of CaMnO{sub 3} film, which can be a promising candidate as a buffer layer for hybrid halide perovskite photovoltaic-thermoelectric systems.

  2. Engineered oxide thin films as 100% lattice match buffer layers for YBCO coated conductors

    NASA Astrophysics Data System (ADS)

    Akin, Y.; Heiba, Z. K.; Sigmund, W.; Hascicek, Y. S.

    2003-12-01

    One of the most important qualities of buffer layers for RE-BCO coated conductors' growth is close lattice match with RE-BCO. However, there is no natural material with a 100% lattice match with RE-BCO. In this study mixtures of europium oxide (Eu 2O 3) and ytterbium oxide (Yb 2O 3), (Eu 1- uYb u) 2O 3 (0.0⩽ u⩽1.0), were investigated as a candidate buffer layer that could have same lattice parameter as YBa 2Cu 3O 7- δ(YBCO). Because the pseudocubic lattice parameter of Eu 2O 3 is bigger, and that of Yb 2O 3 is smaller than lattice parameter of YBCO, and the mixed oxides with appropriate ratio would have same lattice parameter of YBCO. The mixtures were prepared using metal-organic precursor by sol-gel process, and it was found that all mixed samples are single phase, complete solid solutions, and have same crystal system over the whole range of " u". Lattice parameters of mixed (Eu 1- uYb u) 2O 3 oxide powders were changed between 10.86831 and 10.42828 Å which are lattice parameter of Eu 2O 3 and Yb 2O 3, respectively by changing the ratio of Eu/Yb in the mixture. Phase and lattice parameter analysis revealed that pseudocubic lattice parameter of (Eu 0.893Yb 0.107) 2O 3 is 3.82 Å which is same as the lattice parameter of YBCO. Textured (Eu 0.893Yb 0.107) 2O 3 buffer layers were grown on biaxially textured-Ni (1 0 0) substrates. The solution was prepared from Europium and Ytterbium 2,4-pentadioanate, and was deposited on the Ni substrates using a reel-to-reel sol-gel dip coating system. The textured films were annealed at 1150 °C for 10 min under 4% H 2-Ar gas flow. Extensive texture analysis has been done to characterize the texture of (Eu 0.893Yb 0.107) 2O 3 buffer layers. X-ray diffraction (XRD) of the buffer layer showed strong out-of-plane orientation on Ni tape. The (Eu 0.893Yb 0.107) 2O 3 (2 2 2) pole figure indicated a single cube-on-cube textured structure. The omega and phi scans revealed good out-of-plane and in-plane alignments. The full

  3. Buffer influence on magnetic dead layer, critical current, and thermal stability in magnetic tunnel junctions with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Frankowski, Marek; Żywczak, Antoni; Czapkiewicz, Maciej; Zietek, Sławomir; Kanak, Jarosław; Banasik, Monika; Powroźnik, Wiesław; Skowroński, Witold; Checiński, Jakub; Wrona, Jerzy; Głowiński, Hubert; Dubowik, Janusz; Ansermet, Jean-Philippe; Stobiecki, Tomasz

    2015-06-01

    We present a detailed study of Ta/Ru-based buffers and their influence on features crucial from the point of view of applications of Magnetic Tunnel Junctions (MTJs) such as critical switching current and thermal stability. We study buffer/FeCoB/MgO/Ta/Ru and buffer/MgO/FeCoB/Ta/Ru layers, investigating the crystallographic texture, the roughness of the buffers, the magnetic domain pattern, the magnetic dead layer thickness, and the perpendicular magnetic anisotropy fields for each sample. Additionally, we examine the effect of the current induced magnetization switching for complete nanopillar MTJs with lateral dimensions of 270 × 180 nm. Buffer Ta 5/Ru 10/Ta 3 (thicknesses in nm), which has the thickest dead layer, exhibits a much larger thermal stability factor (63 compared to 32.5) while featuring a slightly lower critical current density value (1.25 MA/cm2 compared to 1.5 MA/cm2) than the buffer with the thinnest dead layer Ta 5/Ru 20/Ta 5. We can account for these results by considering the difference in damping which compensates for the difference in the switching barrier heights.

  4. The role of Ag buffer layer in Fe islands growth on Ge (111) surfaces

    SciTech Connect

    Fu, Tsu-Yi Wu, Jia-Yuan; Jhou, Ming-Kuan; Hsu, Hung-Chan

    2015-05-07

    Sub-monolayer iron atoms were deposited at room temperature on Ge (111)-c(2 × 8) substrates with and without Ag buffer layers. The behavior of Fe islands growth was investigated by using scanning tunneling microscope (STM) after different annealing temperatures. STM images show that iron atoms will cause defects and holes on substrates at room temperature. As the annealing temperature rises, iron atoms pull out germanium to form various kinds of alloyed islands. However, the silver layer can protect the Ag/Ge(111)-(√3×√3) reconstruction from forming defects. The phase diagram shows that ring, dot, and triangular defects were only found on Ge (111)-c(2 × 8) substrates. The kinds of islands found in Fe/Ge system are similar to Fe/Ag/Ge system. It indicates that Ge atoms were pulled out to form islands at high annealing temperatures whether there was a Ag layer or not. But a few differences in big pyramidal or strip islands show that the silver layer affects the development of islands by changing the surface symmetry and diffusion coefficient. The structure characters of various islands are also discussed.

  5. Semi-insulating Sn-Zr-O: Tunable resistance buffer layers

    SciTech Connect

    Barnes, Teresa M.; Burst, James M.; Reese, Matthew O.; Perkins, Craig L.

    2015-03-02

    Highly resistive and transparent (HRT) buffer layers are critical components of solar cells and other opto-electronic devices. HRT layers are often undoped transparent conducting oxides. However, these oxides can be too conductive to form an optimal HRT. Here, we present a method to produce HRT layers with tunable electrical resistivity, despite the presence of high concentrations of unintentionally or intentionally added dopants in the film. This method relies on alloying wide-bandgap, high-k dielectric materials (e.g., ZrO{sub 2}) into the host oxide to tune the resistivity. We demonstrate Sn{sub x}Zr{sub 1−x}O{sub 2}:F films with tunable resistivities varying from 0.001 to 10 Ω cm, which are controlled by the Zr mole fraction in the films. Increasing Zr suppresses carriers by expanding the bandgap almost entirely by shifting the valence-band position, which allows the HRT layers to maintain good conduction-band alignment for a low-resistance front contact.

  6. Artificially MoO3 graded ITO anodes for acidic buffer layer free organic photovoltaics

    NASA Astrophysics Data System (ADS)

    Lee, Hye-Min; Kim, Seok-Soon; Kim, Han-Ki

    2016-02-01

    We report characteristics of MoO3 graded ITO anodes prepared by a RF/DC graded sputtering for acidic poly(3,4-ethylene dioxylene thiophene):poly(styrene sulfonic acid) (PEDOT:PSS)-free organic solar cells (OSCs). Graded sputtering of the MoO3 buffer layer on top of the ITO layer produced MoO3 graded ITO anodes with a sheet resistance of 12.67 Ω/square, a resistivity of 2.54 × 10-4 Ω cm, and an optical transmittance of 86.78%, all of which were comparable to a conventional ITO anode. In addition, the MoO3 graded ITO electrode showed a greater work function of 4.92 eV than that (4.6 eV) of an ITO anode, which is beneficial for hole extraction from an organic active layer. Due to the high work function of MoO3 graded ITO electrodes, the acidic PEDOT:PSS-free OSCs fabricated on the MoO3 graded ITO electrode exhibited a power conversion efficiency 3.60% greater than that of a PEDOT:PSS-free OSC on the conventional ITO anode. The successful operation of PEDOT:PSS-free OSCs indicates simpler fabrication steps for cost-effective OSCs and elimination of interfacial reactions caused by the acidic PEDOT:PSS layer for reliable OSCs.

  7. Role of the buffer layer in the active junction in amorphous-crystalline silicon heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Pallarès, J.; Schropp, R. E. I.

    2000-07-01

    We fabricated pn and pin a-SiC:H/c-Si heterojunction solar cells following two different processes. In the first approach, wafers were subjected to an extra atomic hydrogen (produced by hot wire chemical vapor deposition) prior to the deposition of the amorphous layer. A reduction in the open-circuit voltage was observed for the passivated cells due to their higher leakage current. In the second process, pin solar cells with two different quality intrinsic a-Si:H buffer layers were fabricated using plasma enhanced chemical vapor deposition. The cells with a device quality buffer layer (deposited at higher temperature) showed better performance than those with a buffer layer with high hydrogen content and higher defect density (deposited at lower temperatures).

  8. Study of the structural quality of GaN epitaxial layers obtained by hydride vapor phase epitaxy using a low-temperature buffer layer

    NASA Astrophysics Data System (ADS)

    Belogorohov, I. A.; Donskov, A. A.; Knyazev, S. N.; Kozlova, Yu. P.; Pavlov, V. F.; Yugova, T. G.

    2015-11-01

    The structural quality and surface morphology of low-temperature (LT) buffer layers after deposition and high-temperature (HT) annealing and HT GaN layers grown on LT buffer layers by hydride vapor phase epitaxy have been investigated. The HCl flow rate through the Ga source varied from 0.3 to 2 L/h, and the carrier gas N2 flow rate was either 18 or 60 L/h. It is established that the structural quality of LT GaN buffer is determined to a great extent by the HCl and N2 flow rates; the best results are obtained at HCl and N2 flow rates of 0.3 and 18 L/h, respectively. These GaN layers are characterized by a mirror surface and a rocking curve half-width of 360". It is suggested that the layer structure is improved due to the increase in the lateral growth rate.

  9. Piezoelectric domains in the AlGaN hexagonal microrods: Effect of crystal orientations

    NASA Astrophysics Data System (ADS)

    Sivadasan, A. K.; Mangamma, G.; Bera, Santanu; Kamruddin, M.; Dhara, Sandip

    2016-05-01

    Presently, the piezoelectric materials are finding tremendous applications in the micro-mechanical actuators, sensors, and self-powered devices. In this context, the studies pertaining to piezoelectric properties of materials in the different size ranges are very important for the scientific community. The III-nitrides are exceptionally important, not only for optoelectronic but also for their piezoelectric applications. In the present study, we synthesized AlGaN via self-catalytic vapor-solid mechanism by atmospheric pressure chemical vapor deposition technique on AlN base layer over intrinsic Si(100) substrate. The growth process is substantiated using X-ray diffraction and X-ray photoelectron spectroscopy. The Raman and photoluminescence studies reveal the formation of AlGaN microrods in the wurtzite phase and ensure the high optical quality of the crystalline material. The single crystalline, direct wide band gap and hexagonally shaped AlGaN microrods are studied for understanding the behavior of the crystallites under the application of constant external electric field using the piezoresponse force microscopy. The present study is mainly focused on understanding the behavior of induced polarization for the determination of piezoelectric coefficient of AlGaN microrod along the c-axis and imaging of piezoelectric domains in the sample originating because of the angular inclination of AlGaN microrods with respect to its AlN base layers.

  10. Performance enhancement of AlGaN deep-ultraviolet light-emitting diodes with varied superlattice barrier electron blocking layer

    NASA Astrophysics Data System (ADS)

    Liu, Songqing; Ye, Chunya; Cai, Xuefen; Li, Shuping; Lin, Wei; Kang, Junyong

    2016-05-01

    The AlGaN-based deep-UV LEDs with specific design of varied superlattice barrier electron blocking layer (EBL) has been investigated numerically by APSYS software. The proposed structure exhibits significant improvement in the light output power, internal quantum efficiency, current-voltage curve and electroluminescence intensity. After analyzing the profiles of energy band diagrams, carriers concentration and radiative recombination rate, we find the main advantages of proposed structure are ascribed to higher barrier suppressing electron leakage and reduced barrier for hole injection. Thus, compared with reference sample, the proposed EBL design may be a good method for improving the whole performance of UV LEDs.

  11. Improvement of CIGS thin-film solar cell performance by optimization of Zn(O,S) buffer layer parameters

    NASA Astrophysics Data System (ADS)

    Sharbati, Samaneh; Keshmiri, Sayyed Hossein; McGoffin, J. Tyler; Geisthardt, Russell

    2015-03-01

    The effects of Zn(O,S) buffer layer parameters on CuInGaSe (CIGS) cell performance are investigated using a physically based solar cell model. The key issue for CIGS solar cells is to remove destructive effects like pinholes due to thinning buffer layer. Choosing Zn(O,S) instead of CdS as the buffer layer provides the benefit of more transmission. The current difference between cells with CdS and Zn(O,S) buffer layers is more obvious in thicker films. Three main properties were investigated: buffer layer thickness, doping density, and oxygen content. The cell performance is investigated as multiple parameters are varied simultaneously. The effects of all physical parameters of Zn(O,S) are dependent on each other, so that by increasing Zn(O,S) carrier concentration from 1018 to 1020 cm-3, the optimum oxygen content range to have maximum efficiency will be expanded from 50-75 to 30-90 %.

  12. Enhancing electrochemical performance by control of transport properties in buffer layers--solid oxide fuel/electrolyser cells.

    PubMed

    Ramasamy, Devaraj; Nasani, Narendar; Brandão, Ana D; Pérez Coll, Domingo; Fagg, Duncan P

    2015-05-01

    The current work demonstrates how tailoring the transport properties of thin ceria-based buffer layers in solid oxide fuel or electrolyser cells can provide the necessary phase stability against chemical interaction at the electrolyte/electrode interface, while also providing radical improvements in the electrochemical performance of the oxygen electrode. Half cells of Ce0.8R0.2O2-δ + 2 mol% Co buffer layers (where R = Gd, Pr) with Nd2NiO4+δ electrodes were fabricated by spin coating on dense YSZ electrolyte supports. Dramatic decreases in polarization resistance, Rp, of up to an order of magnitude, could be achieved in the order, Pr ≪ Gd < no buffer layer. The current article shows how this improvement can be related to increased levels of ambipolar conductivity in the mixed conducting buffer layer, which provides an additional parallel path for electrochemical reaction. This is an important breakthrough as it shows how electrode polarization resistance can be substantially improved, in otherwise identical electrochemical cells, solely by tailoring the transport properties of thin intermediate buffer layers.

  13. Assembly and organization of poly(3-hexylthiophene) brushes and their potential use as novel anode buffer layers for organic photovoltaics

    NASA Astrophysics Data System (ADS)

    Alonzo, José; Kochemba, W. Michael; Pickel, Deanna L.; Ramanathan, Muruganathan; Sun, Zhenzhong; Li, Dawen; Chen, Jihua; Sumpter, Bobby G.; Heller, William T.; Kilbey, S. Michael, II

    2013-09-01

    Buffer layers that control electrochemical reactions and physical interactions at electrode/film interfaces are key components of an organic photovoltaic cell. Here the structure and properties of layers of semi-rigid poly(3-hexylthiophene) (P3HT) chains tethered at a surface are investigated, and these functional systems are applied in an organic photovoltaic device. Areal density of P3HT chains is readily tuned through the choice of polymer molecular weight and annealing conditions, and insights from optical absorption spectroscopy and semiempirical quantum calculation methods suggest that tethering causes intrachain defects that affect co-facial π-stacking of brush chains. Because of their ability to modify oxide surfaces, P3HT brushes are utilized as an anode buffer layer in a P3HT-PCBM (phenyl-C61-butyric acid methyl ester) bulk heterojunction device. Current-voltage characterization shows a significant enhancement in short circuit current, suggesting the potential of these novel nanostructured buffer layers to replace the PEDOT:PSS buffer layer typically applied in traditional P3HT-PCBM solar cells.Buffer layers that control electrochemical reactions and physical interactions at electrode/film interfaces are key components of an organic photovoltaic cell. Here the structure and properties of layers of semi-rigid poly(3-hexylthiophene) (P3HT) chains tethered at a surface are investigated, and these functional systems are applied in an organic photovoltaic device. Areal density of P3HT chains is readily tuned through the choice of polymer molecular weight and annealing conditions, and insights from optical absorption spectroscopy and semiempirical quantum calculation methods suggest that tethering causes intrachain defects that affect co-facial π-stacking of brush chains. Because of their ability to modify oxide surfaces, P3HT brushes are utilized as an anode buffer layer in a P3HT-PCBM (phenyl-C61-butyric acid methyl ester) bulk heterojunction device

  14. Compact hematite buffer layer as a promoter of nanorod photoanode performances

    PubMed Central

    Milan, R.; Cattarin, S.; Comisso, N.; Baratto, C.; Kaunisto, K.; Tkachenko, N. V.; Concina, I.

    2016-01-01

    The effect of a thin α-Fe2O3 compact buffer layer (BL) on the photoelectrochemical performances of a bare α-Fe2O3 nanorods photoanode is investigated. The BL is prepared through a simple spray deposition onto a fluorine-doped tin oxide (FTO) conducting glass substrate before the growth of a α-Fe2O3 nanorods via a hydrothermal process. Insertion of the hematite BL between the FTO and the nanorods markedly enhances the generated photocurrent, by limiting undesired losses of photogenerated charges at the FTO||electrolyte interface. The proposed approach warrants a marked improvement of material performances, with no additional thermal treatment and no use/dispersion of rare or toxic species, in agreement with the principles of green chemistry. PMID:27733756

  15. Compact hematite buffer layer as a promoter of nanorod photoanode performances

    NASA Astrophysics Data System (ADS)

    Milan, R.; Cattarin, S.; Comisso, N.; Baratto, C.; Kaunisto, K.; Tkachenko, N. V.; Concina, I.

    2016-10-01

    The effect of a thin α-Fe2O3 compact buffer layer (BL) on the photoelectrochemical performances of a bare α-Fe2O3 nanorods photoanode is investigated. The BL is prepared through a simple spray deposition onto a fluorine-doped tin oxide (FTO) conducting glass substrate before the growth of a α-Fe2O3 nanorods via a hydrothermal process. Insertion of the hematite BL between the FTO and the nanorods markedly enhances the generated photocurrent, by limiting undesired losses of photogenerated charges at the FTO||electrolyte interface. The proposed approach warrants a marked improvement of material performances, with no additional thermal treatment and no use/dispersion of rare or toxic species, in agreement with the principles of green chemistry.

  16. Effect of Reaction Temperature of CdS Buffer Layers by Chemical Bath Deposition Method.

    PubMed

    Kim, Hye Jin; Kim, Chae-Woong; Jung, Duk Young; Jeong, Chaehwan

    2016-05-01

    This study investigated CdS deposition on a Cu(In,Ga)Se2 (CIGS) film via chemical bath deposition (CBD) in order to obtain a high-quality optimized buffer layer. The thickness and reaction temperature (from 50 degrees C to 65 degrees C) were investigated, and we found that an increase in the reaction temperature during CBD, resulted in a thicker CdS layer. We obtained a thin film with a thickness of 50 nm at a reaction temperature of 60 degrees C, which also exhibited the highest photoelectric conversion efficiency for use in solar cells. Room temperature time-resolved photoluminescence (TR-PL) measurements were performed on the Cu(In,Ga)Se2 (CIGS) thin film and CdS/CIGS samples to determine the recombination process of the photo-generated minority carrier. The device performance was found to be dependent on the thickness of the CdS layer. As the thickness of the CdS increases, the fill factor and the series resistance increased to 61.66% and decreased to 8.35 Ω, respectively. The best condition was observed at a reaction temperature of 60 degrees C, and its conversion efficiency was 12.20%.

  17. Direct electron injection into an oxide insulator using a cathode buffer layer.

    PubMed

    Lee, Eungkyu; Lee, Jinwon; Kim, Ji-Hoon; Lim, Keon-Hee; Seok Byun, Jun; Ko, Jieun; Dong Kim, Young; Park, Yongsup; Kim, Youn Sang

    2015-04-13

    Injecting charge carriers into the mobile bands of an inorganic oxide insulator (for example, SiO2, HfO2) is a highly complicated task, or even impossible without external energy sources such as photons. This is because oxide insulators exhibit very low electron affinity and high ionization energy levels. Here we show that a ZnO layer acting as a cathode buffer layer permits direct electron injection into the conduction bands of various oxide insulators (for example, SiO2, Ta2O5, HfO2, Al2O3) from a metal cathode. Studies of current-voltage characteristics reveal that the current ohmically passes through the ZnO/oxide-insulator interface. Our findings suggests that the oxide insulators could be used for simply fabricated, transparent and highly stable electronic valves. With this strategy, we demonstrate an electrostatic discharging diode that uses 100-nm SiO2 as an active layer exhibiting an on/off ratio of ∼10(7), and protects the ZnO thin-film transistors from high electrical stresses.

  18. Effect of Reaction Temperature of CdS Buffer Layers by Chemical Bath Deposition Method.

    PubMed

    Kim, Hye Jin; Kim, Chae-Woong; Jung, Duk Young; Jeong, Chaehwan

    2016-05-01

    This study investigated CdS deposition on a Cu(In,Ga)Se2 (CIGS) film via chemical bath deposition (CBD) in order to obtain a high-quality optimized buffer layer. The thickness and reaction temperature (from 50 degrees C to 65 degrees C) were investigated, and we found that an increase in the reaction temperature during CBD, resulted in a thicker CdS layer. We obtained a thin film with a thickness of 50 nm at a reaction temperature of 60 degrees C, which also exhibited the highest photoelectric conversion efficiency for use in solar cells. Room temperature time-resolved photoluminescence (TR-PL) measurements were performed on the Cu(In,Ga)Se2 (CIGS) thin film and CdS/CIGS samples to determine the recombination process of the photo-generated minority carrier. The device performance was found to be dependent on the thickness of the CdS layer. As the thickness of the CdS increases, the fill factor and the series resistance increased to 61.66% and decreased to 8.35 Ω, respectively. The best condition was observed at a reaction temperature of 60 degrees C, and its conversion efficiency was 12.20%. PMID:27483883

  19. Direct electron injection into an oxide insulator using a cathode buffer layer

    PubMed Central

    Lee, Eungkyu; Lee, Jinwon; Kim, Ji-Hoon; Lim, Keon-Hee; Seok Byun, Jun; Ko, Jieun; Dong Kim, Young; Park, Yongsup; Kim, Youn Sang

    2015-01-01

    Injecting charge carriers into the mobile bands of an inorganic oxide insulator (for example, SiO2, HfO2) is a highly complicated task, or even impossible without external energy sources such as photons. This is because oxide insulators exhibit very low electron affinity and high ionization energy levels. Here we show that a ZnO layer acting as a cathode buffer layer permits direct electron injection into the conduction bands of various oxide insulators (for example, SiO2, Ta2O5, HfO2, Al2O3) from a metal cathode. Studies of current–voltage characteristics reveal that the current ohmically passes through the ZnO/oxide-insulator interface. Our findings suggests that the oxide insulators could be used for simply fabricated, transparent and highly stable electronic valves. With this strategy, we demonstrate an electrostatic discharging diode that uses 100-nm SiO2 as an active layer exhibiting an on/off ratio of ∼107, and protects the ZnO thin-film transistors from high electrical stresses. PMID:25864642

  20. Effect of Alloy 625 Buffer Layer on Hardfacing of Modified 9Cr-1Mo Steel Using Nickel Base Hardfacing Alloy

    NASA Astrophysics Data System (ADS)

    Chakraborty, Gopa; Das, C. R.; Albert, S. K.; Bhaduri, A. K.; Murugesan, S.; Dasgupta, Arup

    2016-04-01

    Dashpot piston, made up of modified 9Cr-1Mo steel, is a part of diverse safety rod used for safe shutdown of a nuclear reactor. This component was hardfaced using nickel base AWS ER NiCr-B alloy and extensive cracking was experienced during direct deposition of this alloy on dashpot piston. Cracking reduced considerably and the component was successfully hardfaced by application of Inconel 625 as buffer layer prior to hardface deposition. Hence, a separate study was undertaken to investigate the role of buffer layer in reducing the cracking and on the microstructure of the hardfaced deposit. Results indicate that in the direct deposition of hardfacing alloy on modified 9Cr-1Mo steel, both heat-affected zone (HAZ) formed and the deposit layer are hard making the thickness of the hard layer formed equal to combined thickness of both HAZ and deposit. This hard layer is unable to absorb thermal stresses resulting in the cracking of the deposit. By providing a buffer layer of Alloy 625 followed by a post-weld heat treatment, HAZ formed in the modified 9Cr-1Mo steel is effectively tempered, and HAZ formed during the subsequent deposition of the hardfacing alloy over the Alloy 625 buffer layer is almost completely confined to Alloy 625, which does not harden. This reduces the cracking susceptibility of the deposit. Further, unlike in the case of direct deposition on modified 9Cr-1Mo steel, dilution of the deposit by Ni-base buffer layer does not alter the hardness of the deposit and desired hardness on the deposit surface could be achieved even with lower thickness of the deposit. This gives an option for reducing the recommended thickness of the deposit, which can also reduce the risk of cracking.

  1. Effects of buffer layer and thermal annealing on the performance of hybrid Cu2S/PVK electrically bistable devices

    NASA Astrophysics Data System (ADS)

    Li, Xu; Lu, Yue; Guan, Li; Li, Jiantao; Wang, Yichao; Dong, Guoyi; Tang, Aiwei; Teng, Feng

    2016-09-01

    Hybrid organic/inorganic electrically bistable devices (EBDs) based on Cu2S/PVK nanocomposites have been fabricated by using a simple spin-coating method. An obvious electrical bistability is observed in the current-voltage (I-V) characteristics of the devices, and the presence of the buffer layer and the annealing process have an important effect on the enhancement of the ON/OFF current ratios. Different electrical conduction mechanisms are responsible for the charge switching of the devices in the presence and absence of the buffer layer.

  2. Planarization and Processing of Metamorphic Buffer Layers Grown by Hydride Vapor-Phase Epitaxy

    NASA Astrophysics Data System (ADS)

    Zutter, Brian T.; Schulte, Kevin L.; Kim, Tae Wan; Mawst, Luke J.; Kuech, T. F.; Foran, Brendan; Sin, Yongkun

    2014-04-01

    Hydride vapor-phase epitaxy (HVPE) is a high-growth-rate, cost-effective means to grow epitaxial semiconductor material. Thick HVPE-based metamorphic buffer layers (MBLs) can serve as "pseudosubstrates" with controllable lattice parameter. In our structures, the indium content in In x Ga1- x As is gradually increased from zero to the final composition corresponding to the desired lattice constant, and then a thick (˜10 μm) constant-composition capping layer is grown. This thick capping layer promotes maximum strain relaxation while permitting use of polishing procedures to achieve surface planarity. Lattice-mismatched growth of MBLs invariably results in rough, cross-hatched surface morphology exhibiting up to 200 nm peak-to-valley roughness. This roughness can be eliminated by chemical mechanical planarization, thus creating a suitable surface for subsequent regrowth. Polishing of In x Ga1- x As is complicated by the sensitivity of the surface layer to the polishing parameters, particularly the applied pressure. Polishing at high applied pressure (12 psi) results in the formation of circular asperities hundreds of nanometers high and tens of microns in diameter. When lower applied pressure (4 psi) was used, the cross-hatching height of MBLs was lowered from 200 nm to <10 nm over a 350 μm lateral scale. The successfully planarized In0.20Ga0.80As MBLs were used as a substrate for a superlattice (SL) structure such as that used in quantum cascade lasers. Use of planarization before regrowth of the SL resulted in a reduction of the high-resolution x-ray diffraction peak full-width at half-maximum from 389″ to 159″.

  3. Improved performance of polymer solar cells by using inorganic, organic, and doped cathode buffer layers

    NASA Astrophysics Data System (ADS)

    Taohong, Wang; Changbo, Chen; Kunping, Guo; Guo, Chen; Tao, Xu; Bin, Wei

    2016-03-01

    The interface between the active layer and the electrode is one of the most critical factors that could affect the device performance of polymer solar cells. In this work, based on the typical poly(3-hexylthiophene):[6,6]-phenyl C61-butyric acid methyl ester (P3HT:PCBM) polymer solar cell, we studied the effect of the cathode buffer layer (CBL) between the top metal electrode and the active layer on the device performance. Several inorganic and organic materials commonly used as the electron injection layer in an organic light-emitting diode (OLED) were employed as the CBL in the P3HT:PCBM polymer solar cells. Our results demonstrate that the inorganic and organic materials like Cs2CO3, bathophenanthroline (Bphen), and 8-hydroxyquinolatolithium (Liq) can be used as CBL to efficiently improve the device performance of the P3HT:PCBM polymer solar cells. The P3HT:PCBM devices employed various CBLs possess power conversion efficiencies (PCEs) of 3.0%-3.3%, which are ca. 50% improved compared to that of the device without CBL. Furthermore, by using the doped organic materials Bphen:Cs2CO3 and Bphen:Liq as the CBL, the PCE of the P3HT:PCBM device will be further improved to 3.5%, which is ca. 70% higher than that of the device without a CBL and ca. 10% increased compared with that of the devices with a neat inorganic or organic CBL. Project supported by the National Natural Science Foundation of China (Grant No. 61204014), the “Chenguang” Project (13CG42) supported by Shanghai Municipal Education Commission and Shanghai Education Development Foundation, China, and the Shanghai University Young Teacher Training Program of Shanghai Municipality, China.

  4. Investigation of hole injection enhancement by MoO{sub 3} buffer layer in organic light emitting diodes

    SciTech Connect

    Haitao, Xu; Xiang, Zhou

    2013-12-28

    An MoO{sub 3} buffer layer prepared by thermal evaporation as hole injection layer was investigated in organic light emitting diodes. The MoO{sub 3} film inserted between the anode and hole transport layer decreased the operating voltage and enhanced power efficiency. Introduction of 1 nm MoO{sub 3} film, which was found to be the optimum layer thickness, resulted in 45% increase in efficiency compared with traditional ITO anode. Results from atomic force microscopy and photoemission spectroscopy showed that smooth surface morphology and suitable energy level alignment of ITO/MoO{sub 3} interface facilitated hole injection and transport. The hole injection and transport mechanism at the ITO/MoO{sub 3} interface in thin and thick buffer layers were analyzed.

  5. Wafer-scale crack-free AlGaN on GaN through two-step selective-area growth for optically pumped stimulated emission

    NASA Astrophysics Data System (ADS)

    Ko, Young-Ho; Bae, Sung-Bum; Kim, Sung-Bock; Kim, Dong Churl; Leem, Young Ahn; Cho, Yong-Hoon; Nam, Eun-Soo

    2016-07-01

    Crack-free AlGaN template has been successfully grown over entire 2-in. wafer by using 2-step selective-area growth (SAG). The GaN truncated structure was obtained by vertical growth mode with low growth temperature. AlGaN of second step was grown under lateral growth mode. Low pressure enhanced the relative ratio of lateral to vertical growth rate as well as absolute overall growth rate. High V/III ratio was favorable for lateral growth mode. Crack-free planar AlGaN was obtained under low pressure of 30 Torr and high V/III ratio of 4400. The AlGaN was crack-free over entire 2-in. wafer and had quite uniform Al-mole fraction. The dislocation density of the AlGaN with 20% Al-composition was as low as ~7.6×108 /cm2, measured by cathodoluminescence. GaN/AlGaN multi-quantum well (MQW) with cladding and waveguide layers were grown on the crack-free AlGaN template with low dislocation density. It was confirmed that the MQW on the AlGaN template emitted the stimulated emission at 355.5 nm through optical pumping experiment. The AlGaN obtained by 2-step SAG would provide high crystal quality for highly-efficient optoelectronic devices as well as the ultraviolet laser diode.

  6. Growth of lanthanum manganate buffer layers for coated conductors via a metal-organic decomposition process

    NASA Astrophysics Data System (ADS)

    Venkataraman, Kartik

    LaMnO3 (LMO) was identified as a possible buffer material for YBa2Cu3O7-x conductors due to its diffusion barrier properties and close lattice match with YBa2Cu 3O7-x. Growth of LMO films via a metal-organic decomposition (MOD) process on Ni, Ni-5at.%W (Ni-5W), and single crystal SrTiO3 substrates was investigated. Phase-pure LMO was grown via MOD on Ni and SrTiO 3 substrates at temperatures and oxygen pressures within a thermodynamic "process window" wherein LMO, Ni, Ni-5W, and SrTiO3 are all stable components. LMO could not be grown on Ni-5W in the "process window" because tungsten diffused from the substrate into the overlying film, where it reacted to form La and Mn tungstates. The kinetics of tungstate formation and crystallization of phase-pure LMO from the La and Mn acetate precursors are competitive in the temperature range explored (850--1100°C). Temperatures <850°C might mitigate tungsten diffusion from the substrate to the film sufficiently to obviate tungstate formation, but LMO films deposited via MOD require temperatures ≥850°C for nucleation and grain growth. Using a Y2O3 seed layer on Ni-5W to block tungsten from diffusing into the LMO film was explored; however, Y2O3 reacts with tungsten in the "process window" at 850--1100°C. Tungsten diffusion into Y2O3 can be blocked if epitaxial, crack-free NiWO4 and NiO layers are formed at the interface between Ni-5W and Y2O3. NiWO 4 only grows epitaxially if the overlying NiO and buffer layers are thick enough to mechanically suppress (011)-oriented NiWO4 grain growth. This is not the case when a bare 75 nm-thick Y2O3 film on Ni-5W is processed at 850°C. These studies show that the Ni-5W substrate must be at a low temperature to prevent tungsten diffusion, whereas the LMO precursor film must be at elevated temperature to crystallize. An excimer laser-assisted MOD process was used where a Y2O 3-coated Ni-5W substrate was held at 500°C in air and the pulsed laser photo-thermally heated the Y2O3 and LMO

  7. Effect of Ag doping and insulator buffer layer on the memory mechanism of polymer nanocomposites

    NASA Astrophysics Data System (ADS)

    Kaur, Ramneek; Kaur, Jagdish; Tripathi, S. K.

    2015-07-01

    Resistive memory devices based on nanocomposites have attracted great potential for future applications in electronic and optoelectronic devices. The successful synthesis of aqueous CdSe nanoparticles has been provided with UV-Vis and Photoluminescence spectroscopy. The two terminal planar devices of CdSe nanocomposite have been fabricated. The effect of Ag doping and additional dielectric buffer layers on the memory devices have been studied by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The devices show hysteresis loops in both positive and negative bias directions. The memory window has been found to be increased with both Ag doping and PVA layer addition. The charge carrier transport mechanism in the memory devices has been studied by fitting the I-V characteristics with the theoretical model, Space charge conduction model (SCLC). C-V hysteresis loop in both positive and negative bias directions indicate that both the electrons and holes are responsible for memory mechanism of the devices. The switching mechanism of the memory devices has been explained by charge trapping/detrapping model. The retention characteristics show good stability and reliability of the devices.

  8. Superconducting YBa2Cu3O(7-delta) thin films on GaAs with conducting indium-tin-oxide buffer layers

    NASA Astrophysics Data System (ADS)

    Kellett, B. J.; Gauzzi, A.; James, J. H.; Dwir, B.; Pavuna, D.

    1990-12-01

    Superconducting YBa2Cu3O(7-delta) (YBCO) thin films have been grown in situ on GaAs with conducting indium-tin-oxide (ITO) buffer layers. Superconducting onset is about 92 K with zero resistance at 60 K. ITO buffer layers usually form Schottky-like barriers on GaAs. The YBCO film and ITO buffer layer, grown by ion beam sputter codeposition, are textured and polycrystalline with a combined room-temperature resistivity of about 1 milliohm cm.

  9. Effect of Mg doping in ZnO buffer layer on ZnO thin film devices for electronic applications

    NASA Astrophysics Data System (ADS)

    Giri, Pushpa; Chakrabarti, P.

    2016-05-01

    Zinc Oxide (ZnO) thin films have been grown on p-silicon (Si) substrate using magnesium doped ZnO (Mg: ZnO) buffer layer by radio-frequency (RF) sputtering method. In this paper, we have optimized the concentration of Mg (0-5 atomic percent (at. %)) ZnO buffer layer to examine its effect on ZnO thin film based devices for electronic and optoelectronic applications. The crystalline nature, morphology and topography of the surface of the thin film have been characterized. The optical as well as electrical properties of the active ZnO film can be tailored by varying the concentration of Mg in the buffer layer. The crystallite size in the active ZnO thin film was found to increase with the Mg concentration in the buffer layer in the range of 0-3 at. % and subsequently decrease with increasing Mg atom concentration in the ZnO. The same was verified by the surface morphology and topography studies carried out with scanning electron microscope (SEM) and atomic electron microscopy (AFM) respectively. The reflectance in the visible region was measured to be less than 80% and found to decrease with increase in Mg concentration from 0 to 3 at. % in the buffer region. The optical bandgap was initially found to increase from 3.02 eV to 3.74 eV by increasing the Mg content from 0 to 3 at. % but subsequently decreases and drops down to 3.43 eV for a concentration of 5 at. %. The study of an Au:Pd/ZnO Schottky diode reveals that for optimum doping of the buffer layer the device exhibits superior rectifying behavior. The barrier height, ideality factor, rectification ratio, reverse saturation current and series resistance of the Schottky diode were extracted from the measured current voltage (I-V) characteristics.

  10. Assembly and organization of poly(3-hexylthiophene) brushes and their potential use as novel anode buffer layers for organic photovoltaics.

    PubMed

    Alonzo, José; Kochemba, W Michael; Pickel, Deanna L; Ramanathan, Muruganathan; Sun, Zhenzhong; Li, Dawen; Chen, Jihua; Sumpter, Bobby G; Heller, William T; Kilbey, S Michael

    2013-10-01

    Buffer layers that control electrochemical reactions and physical interactions at electrode/film interfaces are key components of an organic photovoltaic cell. Here the structure and properties of layers of semi-rigid poly(3-hexylthiophene) (P3HT) chains tethered at a surface are investigated, and these functional systems are applied in an organic photovoltaic device. Areal density of P3HT chains is readily tuned through the choice of polymer molecular weight and annealing conditions, and insights from optical absorption spectroscopy and semiempirical quantum calculation methods suggest that tethering causes intrachain defects that affect co-facial π-stacking of brush chains. Because of their ability to modify oxide surfaces, P3HT brushes are utilized as an anode buffer layer in a P3HT-PCBM (phenyl-C₆₁-butyric acid methyl ester) bulk heterojunction device. Current-voltage characterization shows a significant enhancement in short circuit current, suggesting the potential of these novel nanostructured buffer layers to replace the PEDOT:PSS buffer layer typically applied in traditional P3HT-PCBM solar cells.

  11. Preferentially oriented BaTiO3 thin films deposited on silicon with thin intermediate buffer layers

    PubMed Central

    2013-01-01

    Barium titanate (BaTiO3) thin films are prepared by conventional 2-methoxy ethanol-based chemical solution deposition. We report highly c-axis-oriented BaTiO3 thin films grown on silicon substrates, coated with a lanthanum oxynitrate buffer layer of 8.9 nm. The influence of the intermediate buffer layer on the crystallization of BaTiO3 film is investigated. The annealing temperature and buffer layer sintering conditions are optimized to obtain good crystal growth. X-ray diffraction measurements show the growth of highly oriented BaTiO3 thin films having a single perovskite phase with tetragonal geometry. The scanning electron microscopy and atomic force microscopy studies indicate the presence of smooth, crack-free, uniform layers, with densely packed crystal grains on the silicon surface. A BaTiO3 film of 150-nm thickness, deposited on a buffer layer of 7.2 nm, shows a dielectric constant of 270, remnant polarization (2Pr) of 5 μC/cm2, and coercive field (Ec) of 60 kV/cm. PMID:23391429

  12. Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

    SciTech Connect

    Li, X.; Nilsson, D.; Danielsson, Ö.; Pedersen, H.; Janzén, E.; Forsberg, U.; Bergsten, J.; Rorsman, N.

    2015-12-28

    The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) epitaxial layer closest to the substrate and a lower doped layer (3 × 10{sup 16 }cm{sup −3}) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement shows a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.

  13. Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

    NASA Astrophysics Data System (ADS)

    Li, X.; Bergsten, J.; Nilsson, D.; Danielsson, Ö.; Pedersen, H.; Rorsman, N.; Janzén, E.; Forsberg, U.

    2015-12-01

    The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 1018 cm-3) epitaxial layer closest to the substrate and a lower doped layer (3 × 1016 cm-3) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement shows a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 1018 cm-3) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.

  14. Growth of room-temperature ``arsenic free'' infrared photovoltaic detectors on GaSb substrate using metamorphic InAlSb digital alloy buffer layers

    NASA Astrophysics Data System (ADS)

    Plis, E.; Rotella, P.; Raghavan, S.; Dawson, L. R.; Krishna, S.; Le, D.; Morath, C. P.

    2003-03-01

    We report the growth of a high-quality graded InAlSb digital alloy buffer layer on GaSb substrates. The metamorphic buffer layer relaxes the lattice matching constraint and allows the growth of heterostructures without the use of a second group V element. Cross-sectional transmission electronic microscopy images reveal a very low dislocation density in the buffer layer. Using such a buffer layer, a room-temperature InGaSb photovoltaic detector with λcutoff˜3 μm has been fabricated with an external quantum efficiency >70%.

  15. Threading dislocations in GaAs epitaxial layers on various thickness Ge buffers on 300 mm Si substrates

    NASA Astrophysics Data System (ADS)

    Bogumilowicz, Y.; Hartmann, J. M.; Rochat, N.; Salaun, A.; Martin, M.; Bassani, F.; Baron, T.; David, S.; Bao, X.-Y.; Sanchez, E.

    2016-11-01

    We have grown GaAs epitaxial layers on Ge buffers, themselves on Si (001) substrates, using an Applied Materials 300 mm metal organic chemical vapor deposition tool. We varied the Ge buffer thickness between 0.36 and 1.38 μm and studied the properties of a 0.27 μm thick GaAs layer on top. We found that increasing the Ge buffer thickness yielded smoother GaAs films with an rms surface roughness as low as 0.5 nm obtained on a 5×5 μm2 area. The bow of the substrate increased following a linear law with the epitaxial stack thickness up to 240 μm for a 1.65 μm stack. We have also characterized the threading dislocations present in the GaAs layers using X-ray diffraction and cathodoluminescence. Increasing the Ge buffer thickness resulted in lower threading dislocation densities, enabling us to obtain anti-phase boundary - free GaAs films with a threading dislocation density as low as 3×107 cm-2. In addition, atomic force microscopy surface topology measurements showed the presence of pits in the GaAs layers whose density agreed well with other threading dislocation density assessments. It thus seems that threading dislocations can in certain cases induce some growth rate variations, making them visible in as-grown GaAs films. Using thicker Ge buffers results in smoother films with less threading dislocations, with the side effect of increasing the bow on the wafer. If bow is not an issue, this is a practical approach to improve the GaAs (on Ge buffer) on silicon quality.

  16. Cd-Zn-O-S alloys for optimal buffer layers in thin-film photovoltaics (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Varley, Joel B.; He, Xiaoqing; Mackie, Neil; Rockett, Angus A.; Lordi, Vincenzo

    2015-09-01

    Advances in thin-film photovoltaics have largely focused on modifying the absorber layer(s), while the choices for other layers in the solar cell stack have remained somewhat limited. In particular, cadmium sulfide (CdS) is widely used as the buffer layer in typical record devices utilizing absorbers like Cu(In,Ga)Se2 (CIGSe) or Cu2ZnSnS4 (CZTS) despite leading to a loss of solar photocurrent due to its band gap of 2.4 eV. While different buffers such as Zn(S,O,OH) are beginning to become competitive with CdS, the identification of additional wider-band gap alternatives with electrical properties comparable to or better than CdS is highly desirable. Here we use hybrid density functional calculations to characterize CdxZn1-xOyS1-y candidate buffer layers in the quaternary phase space composed by Cd, Zn, O, and S. We focus on the band gaps and band offsets of the alloys to assess strategies for improving absorption losses from conventional CdS buffers while maintaining similar conduction band offsets known to facilitate good device performance. We also consider additional criteria such as lattice matching to identify regions in the composition space that may provide improved epitaxy to CIGSe and CZTS absorbers. Lastly, we incorporate our calculated alloy properties into device model simulations of typical CIGSe devices to identify the CdxZn1-xOyS1-y buffer compositions that lead to the best performance. This work performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under Contract DE-AC52-07NA27344 and funded by the Department of Energy office of Energy Efficiency and Renewable Energy (EERE) through the SunShot Bridging Research Interactions through collaborative Development Grants in Energy (BRIDGE) program.

  17. Structural characterization of Nb on sapphire as a buffer layer for MBE growth

    NASA Astrophysics Data System (ADS)

    Reimer, P. M.; Zabel, H.; Flynn, C. P.; Dura, J. A.

    1993-02-01

    Niobium films grown by molecular beam epitaxy on sapphire substrates are among the highest quality ones that thin-film metal science has yet produced. This system is in intense use as a buffer layer for epitaxial growth of other metal thin films, magnetic films and superlattices as well. We studied films of Nb [110] deposited by MBE on Al 2O 3 [11 overline20] substrates using high-precision X-ray diffraction. Rocking curves of the out-of-plane Nb (110) peak reveal a two-component line shape. The sharper component implies a mosaic distribution an order of magnitude sharper than bulk single crystal Nb and a transverse structural coherence length exceeding 10 3 nm. The atomic planes associated with the sharp component are exactly aligned with the sapphire (11 overline20) planes, while those associated with the broad component are slightly misaligned. Upon loading the Nb film with a small amount of hydrogen, we find a further, dramatic increase of the lateral coherence length. The resulting mosaic distribution of the sharp component appears to be limited only by that of the sapphire substrate. We will discuss the results in terms of strain relief by hydrogen-induced dislocation motion.

  18. Rayleigh-Taylor growth and imprint reduction using foam buffer layers on the Omega Laser

    NASA Astrophysics Data System (ADS)

    Watt, R. G.; Duke, J. R.; Elliot, N. E.; Gobby, P. L.; Hollis, R. V.; Kopp, R. A.; Mason, R. J.; Pollak, G.; Wilson, D. C.; Willi, O.; Kalantar, D. H.; Boehly, T. R.; Knauer, J. P.; Meyerhofer, D. D.; Smalyuk, V. A.; Verdon, C. P.

    1997-11-01

    A serious concern for directly driven ICF implosions is the asymmetry imparted to the capsule by laser drive nonuniformities. A distributed phase plate (DPP) with speckle pattern averaged over several coherence times by smoothing with spectral dispersion (SSD) still retains an ``early time imprint''. A supersonically preheated foam, with Au preheat layer, may reduce this imprint, by creating a low density, high temperature thermal plasma between the absorption and ablation surfaces. We report on experiments using machined polystyrene (PS) foams at 30 mg/cc on the Omega laser at 351 nm. The Rayleigh-Taylor growth of intentional solid substrate mass modulations was measured. Similar observed growth with and without foam suggests at most minor isentrope changes in the solid due to the presence of the foam. Significant reduction in the imprint from the OMEGA beams with DPP and distributed polarization rotators (DPR) but without smoothing by spectral dispersion (SSD) is observed when a foam buffer is employed. Recent experimental results will be shown and compared to simulations.

  19. ZnO epitaxy on (111) Si using epitaxial Lu2O3 buffer layers

    NASA Astrophysics Data System (ADS)

    Guo, W.; Allenic, A.; Chen, Y. B.; Pan, X. Q.; Tian, W.; Adamo, C.; Schlom, D. G.

    2008-02-01

    We report the growth and characterization of single-crystalline, crack-free, epitaxial (0001) ZnO films on (111) Si substrates using intervening epitaxial Lu2O3 buffer layers. The epitaxial orientation relationships are (0001)ZnO∥(111)Lu2O3∥(111)Si and [12¯10]ZnO∥[1¯10]Lu2O3∥[11¯0]Si. X-ray diffraction and transmission electron microscopy reveal that the ZnO films have high structural quality and an atomically sharp ZnO /Lu2O3 interface. Temperature-dependent photoluminescence measurements show optical properties comparable to ZnO single crystals. The films have a resistivity of 0.31Ωcm, an electron concentration of 2.5×1017cm-3, and a mobility of 80cm2/Vṡs at room temperature. The epitaxial growth of ZnO on Si represents a significant step toward the integration of ZnO-based multifunctional devices with Si electronics.

  20. Improving the performance of perovskite solar cells with glycerol-doped PEDOT:PSS buffer layer

    NASA Astrophysics Data System (ADS)

    Jian-Feng, Li; Chuang, Zhao; Heng, Zhang; Jun-Feng, Tong; Peng, Zhang; Chun-Yan, Yang; Yang-Jun, Xia; Duo-Wang, Fan

    2016-02-01

    In this paper, we investigate the effects of glycerol doping on transmittance, conductivity and surface morphology of poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate)) (PEDOT:PSS) and its influence on the performance of perovskite solar cells. . The conductivity of PEDOT:PSS is improved obviously by doping glycerol. The maximum of the conductivity is 0.89 S/cm when the doping concentration reaches 6 wt%, which increases about 127 times compared with undoped. The perovskite solar cells are fabricated with a configuration of indium tin oxide (ITO)/PEDOT:PSS/CH3NH3PbI3/PC61BM/Al, where PEDOT:PSS and PC61BM are used as hole and electron transport layers, respectively. The results show an improvement of hole charge transport as well as an increase of short-circuit current density and a reduction of series resistance, owing to the higher conductivity of the doped PEDOT:PSS. Consequently, it improves the whole performance of perovskite solar cell. The power conversion efficiency (PCE) of the device is improved from 8.57% to 11.03% under AM 1.5 G (100 mW/cm2 illumination) after the buffer layer has been modified. Project supported by the National Natural Science Foundation of China (Grant Nos. 61264002, 61166002, 91333206, and 51463011), the Natural Science Foundation of Gansu Province, China (Grant No. 1308RJZA159), the New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-13-0840), the Research Project of Graduate Teacher of Gansu Province, China (Grant No. 2014A-0042), and the Postdoctoral Science Foundation from Lanzhou Jiaotong University, China.

  1. Optimization of the Energy Level Alignment between the Photoactive Layer and the Cathode Contact Utilizing Solution-Processed Hafnium Acetylacetonate as Buffer Layer for Efficient Polymer Solar Cells.

    PubMed

    Yu, Lu; Li, Qiuxiang; Shi, Zhenzhen; Liu, Hao; Wang, Yaping; Wang, Fuzhi; Zhang, Bing; Dai, Songyuan; Lin, Jun; Tan, Zhan'ao

    2016-01-13

    The insertion of an appropriate interfacial buffer layer between the photoactive layer and the contact electrodes makes a great impact on the performance of polymer solar cells (PSCs). Ideal interfacial buffer layers could minimize the interfacial traps and the interfacial barriers caused by the incompatibility between the photoactive layer and the electrodes. In this work, we utilized solution-processed hafnium(IV) acetylacetonate (Hf(acac)4) as an effective cathode buffer layer (CBL) in PSCs to optimize the energy level alignment between the photoactive layer and the cathode contact, with the short-circuit current density (Jsc), open-circuit voltage (Voc), and fill factor (FF) all simultaneously improved with Hf(acac)4 CBL, leading to enhanced power conversion efficiencies (PCEs). Ultraviolet photoemission spectroscopy (UPS) and scanning Kelvin probe microscopy (SKPM) were performed to confirm that the interfacial dipoles were formed with the same orientation direction as the built-in potential between the photoactive layer and Hf(acac)4 CBL, benefiting the exciton separation and electron transport/extraction. In addition, the optical characteristics and surface morphology of the Hf(acac)4 CBL were also investigated.

  2. Simultaneous enhancement of photovoltage and charge transfer in Cu2O-based photocathode using buffer and protective layers

    NASA Astrophysics Data System (ADS)

    Li, Changli; Hisatomi, Takashi; Watanabe, Osamu; Nakabayashi, Mamiko; Shibata, Naoya; Domen, Kazunari; Delaunay, Jean-Jacques

    2016-07-01

    Coating n-type buffer and protective layers on Cu2O may be an effective means to improve the photoelectrochemical (PEC) water-splitting performance of Cu2O-based photocathodes. In this letter, the functions of the buffer layer and protective layer on Cu2O are examined. It is found that a Ga2O3 buffer layer can form a buried junction with Cu2O, which inhibits Cu2O self-reduction as well as increases the photovoltage through a small conduction band offset between the two semiconductors. The introduction of a TiO2 thin protective layer not only improves the stability of the photocathode but also enhances the electron transfer from the photocathode surface into the electrolyte, thus resulting in an increase in photocurrent at positive potentials. These results show that the selection of overlayers with appropriate conduction band positions provides an effective strategy for obtaining a high photovoltage and high photocurrent in PEC systems.

  3. High Jc YBCO coated conductors on non-magnetic metallic substrate using YSZ-based buffer layer architecture

    NASA Astrophysics Data System (ADS)

    Celentano, G.; Boffa, V.; Ciontea, L.; Fabbri, F.; Galluzzi, V.; Gambardella, U.; Mancini, A.; Petrisor, T.; Rogai, R.; Rufoloni, A.; Varesi, E.

    2002-08-01

    Biaxially aligned YBa 2Cu 3O 7- δ (YBCO) thick films were deposited by pulsed laser ablation technique on cube textured non-magnetic Ni 89V 11 (Ni-V) substrate, using CeO 2/YSZ/CeO 2/NiO buffer layer architecture. The first NiO seed layer was formed by epitaxial oxidation of the Ni-V substrate. Structural analyses show typical full width at half maximum values of φ- and ω-scans less than 10° and 8°, respectively. The highest value obtained for the critical current density at 77 K and zero magnetic field was 6×10 5 A cm -2, which is close to that obtained for YBCO films grown on CeO 2/NiO buffer layer architecture.

  4. Influence of a front buffer layer on the performance of flexible Cadmium sulfide/Cadmium telluride solar cells

    NASA Astrophysics Data System (ADS)

    Mahabaduge, Hasitha Padmika

    Cadmium telluride (CdTe) solar cells have been developing as a promising candidate for large-scale application of photovoltaic energy conversion and have become the most commercially successful polycrystalline thin-film solar module material. In scaling up from small cells to large-area modules, inevitably non-uniformities across the large area will limit the performance of the large cell or module. The effects of these non-uniformities can be reduced by introducing a thin, high-resistivity transparent buffer layer between the conductive electrodes and the semiconductor diode. ZnO is explored in this dissertation as a high-resistivity transparent buffer layer for sputtered CdTe solar cells and efficiencies over 15% have been achieved on commercially available Pilkington TEC15M glass substrates. The highest open-circuit voltage of 0.858V achieved using the optimized ZnO buffer layer is among the best reported in the literature. The properties of ZnO:Al as a buffer are also investigated. We have shown that ZnO:Al can serve both as a transparent conducting oxide layer as well as a high-resistivity transparent layer for CdTe solar cells. ZnO:Al reactively sputtered with oxygen can give the necessary resistivities that allow it to be used as a high-resistivity transparent layer. Glass is the most common choice as the substrate for solar cells fabricated in the superstrate configuration due to its transparency and mechanical rigidity. However flexible substrates offer the advantages of light weight, high flexibility, ease of integrability and higher throughput through roll-to-roll processing over glass. This dissertation presents significant improvements made to flexible CdTe solar cells reporting an efficiency of 14% on clear KaptonRTM flexible polyimide substrates. Our efficiency of 14% is, to our knowledge, the best for any flexible CdTe cell reported in literature.

  5. Influence of Al-, Co-, Cu-, and In-doped ZnO buffer layers on the structural and the optical properties of ZnO thin films

    NASA Astrophysics Data System (ADS)

    Kim, Younggyu; Choe, Jongyun; Nam, Giwoong; Kim, Ikhyun; Leem, Jae-Young; Lee, Sang-heon; Kim, Soaram; Kim, Do Yeob; Kim, Sung-O.

    2015-01-01

    Zinc oxide (ZnO) thin films without a buffer layer and with Al-, Co-, Cu-, and In-doped ZnO buffer layers were prepared by using the sol-gel spin-coating method. For the first time, the effects of the ZnO buffer layers doped with different metal materials on the structural and the optical properties of the ZnO thin films are investigated. The surface morphologies of the ZnO thin films having wrinkle structures significantly depended on the type of buffer layer. The largest crystallite size and the highest c-axis orientation were observed for the ZnO thin film with a Co-doped ZnO buffer layer. However, the transmittance for the ZnO thin films with metal-doped buffer layers was slightly decreased compared to that without the buffer layer, and metal-doped ZnO buffer layers hardly affected the optical band gap of the ZnO thin films.

  6. Flexible PTB7:PC71BM bulk heterojunction solar cells with a LiF buffer layer

    NASA Astrophysics Data System (ADS)

    Yanagidate, Tatsuki; Fujii, Shunjiro; Ohzeki, Masaya; Yanagi, Yuichiro; Arai, Yuki; Okukawa, Takanori; Yoshida, Akira; Kataura, Hiromichi; Nishioka, Yasushiro

    2014-02-01

    Bulk heterojunction solar cells were fabricated using poly[4,8-bis[(2-ethylhexyl)oxy]benzo [1,2-b:4,5-b‧]dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]-thiophenediyl] (PTB7) and [6,6]-phenyl C71 butyric acid methyl ester (PC71BM) after a layer of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) was deposited on a flexible indium tin oxide (ITO)-coated polyethylene terephthalate substrate. The fabricated structures were Al/LiF/PTB7:PC71BM/PEDOT:PSS/ITO with or without a lithium fluoride (LiF) buffer layer, and the effect of the LiF buffer layer on the performance of the solar cells was investigated. The LiF layer significantly increased the open-circuit voltages and fill factors of the solar cells, presumably because of the work function shift of the aluminum cathode. As a result, the conversion efficiency increased from 2.31 to 4.02% owing to the presence of the LiF layer. From the results of a stability test, it was concluded that the inserted LiF layer acted as a shielding and scavenging protector, which prevented the intrusion of some chemical species into the active layer, thereby improving the lifetime of the unpakcaged devices.

  7. Enhanced field emission from ZnO nanowire arrays utilizing MgO buffer between seed layer and silicon substrate

    NASA Astrophysics Data System (ADS)

    Chen, Si; Chen, Jiangtao; Liu, Jianlin; Qi, Jing; Wang, Yuhua

    2016-11-01

    Field emitters based on ZnO nanowires and other nanomaterials are promising high-brightness electron sources for field emission display, microscopy and other applications. The performance of a ZnO nanowire field emitter is linked to the quality, conductivity and alignment of the nanowires on a substrate, therefore requiring ways to improve these parameters. Here, ZnO nanowire arrays were grown on ZnO seed layer on silicon substrate with MgO buffer between the seed layer and Si. The turn-on field and enhancement factor of these nanowire arrays are 3.79 V/μm and 3754, respectively. These properties are improved greatly compared to those of ZnO nanowire arrays grown on ZnO seed layer without MgO buffer, which are 5.06 V/μm and 1697, respectively. The enhanced field emission properties can be attributed to better electron transport in seed layer, and better nanowire alignment because of MgO buffer.

  8. Improved high temperature integration of Al2O3 on MoS2 by using a metal oxide buffer layer

    NASA Astrophysics Data System (ADS)

    Son, Seokki; Yu, Sunmoon; Choi, Moonseok; Kim, Dohyung; Choi, Changhwan

    2015-01-01

    We deposited a metal oxide buffer layer before atomic layer deposition (ALD) of Al2O3 onto exfoliated molybdenum disulfide (MoS2) in order to accomplish enhanced integration. We demonstrate that even at a high temperature, functionalization of MoS2 by means of a metal oxide buffer layer can effectively provide nucleation sites for ALD precursors, enabling much better surface coverage of Al2O3. It is shown that using a metal oxide buffer layer not only allows high temperature ALD process, resulting in highly improved quality of Al2O3/MoS2 interface, but also leaves MoS2 intact.

  9. Probing temperature gradients within the GaN buffer layer of AlGaN/GaN high electron mobility transistors with Raman thermography

    SciTech Connect

    Hodges, C. Pomeroy, J.; Kuball, M.

    2014-02-14

    We demonstrate the ability of confocal Raman thermography using a spatial filter and azimuthal polarization to probe vertical temperature gradients within the GaN buffer layer of operating AlGaN/GaN high electron mobility transistors. Temperature gradients in the GaN layer are measured by using offset focal planes to minimize the contribution from different regions of the GaN buffer. The measured temperature gradient is in good agreement with a thermal simulation treating the GaN thermal conductivity as homogeneous throughout the layer and including a low thermal conductivity nucleation layer to model the heat flow between the buffer and substrate.

  10. Investigations into alterntive substrate, absorber, and buffer layer processing for Cu(In,Ga)Se{sub 2}-based solar cells

    SciTech Connect

    Tuttle, J.R.; Berens, T.A.; Keane, J.

    1996-05-01

    High-performance Cu(In,Ga)Se{sub 2}(CIGS)-based solar cells are presently fabricated within a narrow range of processing options. In this contribution, alternative substrate, absorber, and buffer layer processing is considered. Cell performance varies considerably when alternative substrates are employed. These variations are narrowed with the addition of Na via a Na{sub 2}S compound. Sputtered and electrodeposited CIGS precursors and completed absorbers show promise as alternatives to evaporation. A recrystallization process is required to improve their quality. (In,Ga){sub y}Se buffer layers contribute to cell performance above 10. Further improvements in these alternatives will lead to combined cell performance greater than 10% in the near term.

  11. Graphene on a metal surface with an h-BN buffer layer: gap opening and N-doping

    NASA Astrophysics Data System (ADS)

    Wang, Tao; Lu, Yunhao; Feng, Y. P.

    2016-04-01

    Graphene grown on a metal surface, Cu(111), with a boron-nitride (h-BN) buffer layer is studied. Our first-principles calculations reveal that charge is transferred from the copper substrate to graphene through the h-BN buffer layer which results in n-doped graphene in the absence of a gate voltage. More importantly, a gap of 0.2 eV, which is comparable to that of a typical narrow gap semiconductor, opens just 0.5 eV below the Fermi level at the Dirac point. The Fermi level can be easily shifted inside this gap to make graphene a semiconductor, which is crucial for graphene-based electronic devices. A graphene-based p-n junction can be realized with graphene eptaxially grown on a metal surface.

  12. Control of Threshold Voltage for Top-Gated Ambipolar Field-Effect Transistor by Gate Buffer Layer.

    PubMed

    Khim, Dongyoon; Shin, Eul-Yong; Xu, Yong; Park, Won-Tae; Jin, Sung-Ho; Noh, Yong-Young

    2016-07-13

    The threshold voltage and onset voltage for p-channel and n-channel regimes of solution-processed ambipolar organic transistors with top-gate/bottom-contact (TG/BC) geometry were effectively tuned by gate buffer layers in between the gate electrode and the dielectric. The work function of a pristine Al gate electrode (-4.1 eV) was modified by cesium carbonate and vanadium oxide to -2.1 and -5.1 eV, respectively, which could control the flat-band voltage, leading to a remarkable shift of transfer curves in both negative and positive gate voltage directions without any side effects. One important feature is that the mobility of transistors is not very sensitive to the gate buffer layer. This method is simple but useful for electronic devices where the threshold voltage should be precisely controlled, such as ambipolar circuits, memory devices, and light-emitting device applications. PMID:27323003

  13. Fabrication of (110)-one-axis-oriented perovskite-type oxide thin films and their application to buffer layer

    NASA Astrophysics Data System (ADS)

    Sato, Tomoya; Ichinose, Daichi; Kimura, Junichi; Inoue, Takaaki; Mimura, Takanori; Funakubo, Hiroshi; Uchiyama, Kiyoshi

    2016-10-01

    BaCe0.9Y0.1O3-δ (BCYO) and SrZr0.8Y0.2O3-δ (SZYO) thin films of perovskite-type oxides were deposited on (111)Pt/TiO x /SiO2/(100)Si substrates. X-ray diffraction patterns showed that the (110)-oriented BCYO and SZYO thin films were grown on (111)Pt/Si substrates directly without using any buffer layers. Thin films of SrRuO3 (SRO), a conductive perovskite-type oxide, were also deposited on those films and highly (110)-oriented SRO thin films were obtained. We believe that this (110)-oriented SRO works as a buffer layer to deposit (110)-oriented perovskite-type ferroelectric oxide thin films as well as a bottom electrode and can modify the ferroelectric properties of the oxide thin films by controlling their crystallographic orientations.

  14. Thermally robust perpendicular Co/Pd-based synthetic antiferromagnetic coupling enabled by a W capping or buffer layer

    PubMed Central

    Lee, Ja-Bin; An, Gwang-Guk; Yang, Seung-Mo; Park, Hae-Soo; Chung, Woo-Seong; Hong, Jin-Pyo

    2016-01-01

    Perpendicularly magnetized tunnel junctions (p-MTJs) that contain synthetic antiferromagnetic (SAF) frames show promise as reliable building blocks to meet the demands of perpendicular magnetic anisotropy (PMA)-based spintronic devices. In particular, Co/Pd multilayer-based SAFs have been widely employed due to their outstanding PMA features. However, the widespread utilization of Co/Pd multilayer SAFs coupled with an adjacent CoFeB reference layer (RL) is still a challenge due to the structural discontinuity or intermixing that occurs during high temperature annealing. Thus, we address the thermally robust characteristics of Co/Pd multilayer SAFs by controlling a W layer as a potential buffer or capping layer. The W-capped Co/Pd multilayer SAF, which acts as a pinning layer, exhibited a wide-range plateau with sharp spin-flip and near-zero remanence at the zero field. Structural analysis of the W-capped multilayer SAF exhibited single-crystal-like c-axis oriented crystalline features after annealing at 400 °C, thereby demonstrating the applicability of these frames. In addition, when the W layer serving as a buffer layer in the Co/Pd multilayer SAF was coupled with a conventional CoFeB RL, higher annealing stability up to 425 °C and prominent antiferromagnetic coupling behavior were obtained. PMID:26887790

  15. Thermally robust perpendicular Co/Pd-based synthetic antiferromagnetic coupling enabled by a W capping or buffer layer

    NASA Astrophysics Data System (ADS)

    Lee, Ja-Bin; An, Gwang-Guk; Yang, Seung-Mo; Park, Hae-Soo; Chung, Woo-Seong; Hong, Jin-Pyo

    2016-02-01

    Perpendicularly magnetized tunnel junctions (p-MTJs) that contain synthetic antiferromagnetic (SAF) frames show promise as reliable building blocks to meet the demands of perpendicular magnetic anisotropy (PMA)-based spintronic devices. In particular, Co/Pd multilayer-based SAFs have been widely employed due to their outstanding PMA features. However, the widespread utilization of Co/Pd multilayer SAFs coupled with an adjacent CoFeB reference layer (RL) is still a challenge due to the structural discontinuity or intermixing that occurs during high temperature annealing. Thus, we address the thermally robust characteristics of Co/Pd multilayer SAFs by controlling a W layer as a potential buffer or capping layer. The W-capped Co/Pd multilayer SAF, which acts as a pinning layer, exhibited a wide-range plateau with sharp spin-flip and near-zero remanence at the zero field. Structural analysis of the W-capped multilayer SAF exhibited single-crystal-like c-axis oriented crystalline features after annealing at 400 °C, thereby demonstrating the applicability of these frames. In addition, when the W layer serving as a buffer layer in the Co/Pd multilayer SAF was coupled with a conventional CoFeB RL, higher annealing stability up to 425 °C and prominent antiferromagnetic coupling behavior were obtained.

  16. Thermally robust perpendicular Co/Pd-based synthetic antiferromagnetic coupling enabled by a W capping or buffer layer.

    PubMed

    Lee, Ja-Bin; An, Gwang-Guk; Yang, Seung-Mo; Park, Hae-Soo; Chung, Woo-Seong; Hong, Jin-Pyo

    2016-01-01

    Perpendicularly magnetized tunnel junctions (p-MTJs) that contain synthetic antiferromagnetic (SAF) frames show promise as reliable building blocks to meet the demands of perpendicular magnetic anisotropy (PMA)-based spintronic devices. In particular, Co/Pd multilayer-based SAFs have been widely employed due to their outstanding PMA features. However, the widespread utilization of Co/Pd multilayer SAFs coupled with an adjacent CoFeB reference layer (RL) is still a challenge due to the structural discontinuity or intermixing that occurs during high temperature annealing. Thus, we address the thermally robust characteristics of Co/Pd multilayer SAFs by controlling a W layer as a potential buffer or capping layer. The W-capped Co/Pd multilayer SAF, which acts as a pinning layer, exhibited a wide-range plateau with sharp spin-flip and near-zero remanence at the zero field. Structural analysis of the W-capped multilayer SAF exhibited single-crystal-like c-axis oriented crystalline features after annealing at 400 °C, thereby demonstrating the applicability of these frames. In addition, when the W layer serving as a buffer layer in the Co/Pd multilayer SAF was coupled with a conventional CoFeB RL, higher annealing stability up to 425 °C and prominent antiferromagnetic coupling behavior were obtained.

  17. Advantages of the AlGaN spacer in InAlN high-electron-mobility transistors grown using metalorganic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Yamada, Atsushi; Ishiguro, Tetsuro; Kotani, Junji; Tomabechi, Shuichi; Nakamura, Norikazu; Watanabe, Keiji

    2016-05-01

    We demonstrate the advantages of an AlGaN spacer layer in an InAlN high-electron-mobility transistor (HEMT). We investigated the effects of the growth parameters of the spacer layer on electron mobility in InAlN HEMTs grown by metalorganic vapor phase epitaxy, focusing on the surface roughness of the spacer layer and sharpness of the interface with the GaN channel layer. The electron mobility degraded, as evidenced by the formation of a graded AlGaN layer at the top of the GaN channel layer and the surface roughness of the AlN spacer layer. We believe that the short migration length of aluminum atoms is responsible for the observed degradation. An AlGaN spacer layer was employed to suppress the formation of the graded AlGaN layer and improve surface morphology. A high electron mobility of 1550 cm2 V-1 s-1 and a low sheet resistance of 211 Ω/sq were achieved for an InAlN HEMT with an AlGaN spacer layer.

  18. Non-polar a-plane ZnO films grown on r-Al2O3 substrates using GaN buffer layers

    NASA Astrophysics Data System (ADS)

    Xu, C. X.; Chen, W.; Pan, X. H.; Chen, S. S.; Ye, Z. Z.; Huang, J. Y.

    2016-09-01

    In this work, GaN buffer layer has been used to grow non-polar a-plane ZnO films by laser-assisted and plasma-assisted molecular beam epitaxy. The thickness of GaN buffer layer ranges from ∼3 to 12 nm. The GaN buffer thickness effect on the properties of a-plane ZnO thin films is carefully investigated. The results show that the surface morphology, crystal quality and optical properties of a-plane ZnO films are strongly correlated with the thickness of GaN buffer layer. It was found that with 6 nm GaN buffer layer, a-plane ZnO films display the best crystal quality with X-ray diffraction rocking curve full-width at half-maximum of only 161 arcsec for the (101) reflection.

  19. Epitaxial NbN/AlN/NbN tunnel junctions on Si substrates with TiN buffer layers

    NASA Astrophysics Data System (ADS)

    Sun, Rui; Makise, Kazumasa; Zhang, Lu; Terai, Hirotaka; Wang, Zhen

    2016-06-01

    We have developed epitaxial NbN/AlN/NbN tunnel junctions on Si (100) substrates with a TiN buffer layer. A 50-nm-thick (200)-oriented TiN thin film was introduced as the buffer layer for epitaxial growth of NbN/AlN/NbN trilayers on Si substrates. The fabricated NbN/AlN/NbN junctions demonstrated excellent tunneling properties with a high gap voltage of 5.5 mV, a large IcRN product of 3.8 mV, a sharp quasiparticle current rise with a ΔVg of 0.4 mV, and a small subgap leakage current. The junction quality factor Rsg/RN was about 23 for the junction with a Jc of 47 A/cm2 and was about 6 for the junction with a Jc of 3.0 kA/cm2. X-ray diffraction and transmission electron microscopy observations showed that the NbN/AlN/NbN trilayers were grown epitaxially on the (200)-orientated TiN buffer layer and had a highly crystalline structure with the (200) orientation.

  20. Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

    SciTech Connect

    Vajargah, S. Hosseini; Botton, G. A.; Ghanad-Tavakoli, S.; Preston, J. S.; Kleiman, R. N.

    2013-09-21

    The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer layer were studied by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Heteroepitaxy of GaSb and AlSb on Si both occur by Volmer-Weber (i.e., island mode) growth. However, the AlSb and GaSb islands have distinctly different characteristics as revealed through an atomic-resolution structural study using Z-contrast of HAADF-STEM imaging. While GaSb islands are sparse and three dimensional, AlSb islands are numerous and flattened. The introduction of 3D island-forming AlSb buffer layer facilitates the nucleation of GaSb islands. The AlSb islands-assisted nucleation of GaSb islands results in the formation of drastically higher quality planar film at a significantly smaller thickness of films. The interface of the AlSb and GaSb epilayers with the Si substrate was further investigated with energy dispersive X-ray spectrometry to elucidate the key role of the AlSb buffer layer in the growth of GaSb epilayers on Si substrates.

  1. Y1Ba2Cu3O(6+delta) growth on thin Y-enhanced SiO2 buffer layers on silicon

    NASA Technical Reports Server (NTRS)

    Robin, T.; Mesarwi, A.; Wu, N. J.; Fan, W. C.; Espoir, L.; Ignatiev, A.; Sega, R.

    1991-01-01

    SiO2 buffer layers as thin as 2 nm have been developed for use in the growth of Y1Ba2Cu3O(6+delta) thin films on silicon substrates. The SiO2 layers are formed through Y enhancement of silicon oxidation, and are highly stoichiometric. Y1Ba2Cu3O(6+delta) film growth on silicon with thin buffer layers has shown c orientation and Tc0 = 78 K.

  2. The effects of the porous buffer layer and doping with dysprosium on internal stresses in the GaInP:Dy/por-GaAs/GaAs(100) heterostructures

    SciTech Connect

    Seredin, P. V.; Gordienko, N. N.; Glotov, A. V.; Zhurbina, I. A.; Domashevskaya, E. P.; Arsent'ev, I. N. Shishkov, M. V.

    2009-08-15

    In structures with a porous buffer layer, residual internal stresses caused by a mismatch between the crystal-lattice parameters of the epitaxial GaInP alloy and the GaAs substrate are redistributed to the porous layer that acts as a buffer and is conducive to disappearance of internal stresses. Doping of the epitaxial layer with dysprosium exerts a similar effect on the internal stresses in the film-substrate structure.

  3. Enhancement of perpendicular magnetic anisotropy and coercivity in ultrathin Ru/Co/Ru films through the buffer layer engineering

    NASA Astrophysics Data System (ADS)

    Kolesnikov, Alexander G.; Stebliy, Maxim E.; Ognev, Alexey V.; Samardak, Alexander S.; Fedorets, Aleksandr N.; Plotnikov, Vladimir S.; Han, Xiufeng; Chebotkevich, Ludmila A.

    2016-10-01

    We present results on a study of the interplay between microstructure and the magnetic properties of ultrathin Ru/Co/Ru films with perpendicular magnetic anisotropy (PMA). To induce PMA in the Co layer, we experimentally determined thicknesses of the buffer and capping layers of Ru. The maximum value of PMA was observed for the Co thickness of 0.9 nm with the 3 nm thick capping layer. The effective anisotropy field (H eff) and coercive force (H c) of the Co layer are very sensitive to the Ru buffer layer thickness (t b). The values of H eff and H c increase approximately by two and ten times, correspondingly, when t b changes from 6 to 20 nm, owing to an increase in volume fraction of the crystalline phase as a result of the grains’ growth. PMA is found to be mainly enhanced by elastic strains induced by the lattice mismatch on the Ru/Co and Co/Ru interfaces, leading to the deformation of the Co lattice. The surface impact is determined to be less than 10% of the magneto-elastic contribution to the effective anisotropy. Observation of the magnetic domain structure by means of polar Kerr microscopy reveals that out-of-plane magnetization reversal occurs through the nucleation, growth, and annihilation of domains, where the average size drastically rises with the increasing t b.

  4. High rate buffer layer for IBAD MgO coated conductors

    DOEpatents

    Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.

    2007-08-21

    Articles are provided including a base substrate having a layer of an oriented material thereon, and, a layer of hafnium oxide upon the layer of an oriented material. The layer of hafnium oxide can further include a secondary oxide such as cerium oxide, yttrium oxide, lanthanum oxide, scandium oxide, calcium oxide and magnesium oxide. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of hafnium oxide or layer of hafnium oxide and secondary oxide.

  5. High-performance hybrid buffer layer using 1,4,5,8,9,11-hexaazatriphenylenehexacarbonitrile/molybdenum oxide in inverted top-emitting organic light-emitting diodes.

    PubMed

    Park, Cheol Hwee; Lee, Hyun Jun; Hwang, Ju Hyun; Kim, Kyu Nyun; Shim, Yong Sub; Jung, Sun-Gyu; Park, Chan Hyuk; Park, Young Wook; Ju, Byeong-Kwon

    2015-03-25

    A high-performance 1,4,5,8,9,11-hexaazatriphenylenehexacarbonitrile (HATCN)/molybdenum oxide (MoO3) hybrid buffer layer with high hole-injection efficiency and superior plasma resistance under the sputtering process was developed. The HATCN enhances the hole-injection efficiency, and the MoO3 effectively protects the underlying organic layers from plasma damage during deposition by sputtering. This improves the characteristics of inverted top-emitting organic light-emitting diodes using a top transparent conductive oxide electrode. The device using the hybrid buffer layer showed the highest electroluminescence characteristics among devices with other buffer layers. The high hole-injection efficiency of HATCN was shown by the J-F curve of hole-only devices, and the plasma protection performance of MoO3 was shown by atomic force microscope surface morphology images of the buffer layer film after O2 plasma treatment.

  6. Radiation Hard AlGaN Detectors and Imager

    SciTech Connect

    2012-05-01

    Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

  7. Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

    NASA Astrophysics Data System (ADS)

    Ahmed, Adam S.; Wen, Hua; Ohta, Taisuke; Pinchuk, Igor V.; Zhu, Tiancong; Beechem, Thomas; Kawakami, Roland K.

    2016-08-01

    We report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by X-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of <1.5 Å. Transport measurements of exfoliated graphene after SrO deposition show a strong dependence between the Dirac point and Sr oxidation. Subsequently, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.

  8. Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

    DOE PAGES

    Ahmed, Adam S.; Wen, Hua; Ohta, Taisuke; Pinchuk, Igor V.; Zhu, Tiancong; Beechem, Thomas; Kawakami, Roland K.

    2016-04-27

    Here, we report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by X-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of <1.5 Å. Moreover, transport measurements of exfoliated graphene, after SrO deposition, show a strong dependence between the Dirac point and Sr oxidation. As a result, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.

  9. Deposition of LaMnO 3 buffer layer on IBAD-MgO template by reactive DC sputtering

    NASA Astrophysics Data System (ADS)

    Kim, H. S.; Oh, S. S.; Ha, H. S.; Ko, R. K.; Ha, D. W.; Kim, T. H.; Youm, D. J.; Lee, N. J.; Moon, S. H.; Yoo, S. I.; Park, C.

    2009-10-01

    The deposition conditions of LaMnO 3 (LMO) buffer layer on Ion Beam Assisted Deposition (IBAD)-MgO template by reactive DC sputtering were investigated. We developed a specially designed chamber for reactive DC magnetron sputtering. The deposition chamber was composed of two sputtering guns with the mixed metallic target of La (50 at%) + Mn (50 at%), halogen lamp heater, QCM (Quartz Crystal Microbalance), RGA (Residual Gas Analyzer) and reel to reel tape moving system. We investigated the effect of oxygen flow rate on the deposition rate of LMO layer. We found that there was an optimal range of oxygen flow rate to have the desired layer. Above the range, the deposition rate decreased sharply and plasma was unstable. Below the range, the deposited layer was partially metallic. We investigated the effect of substrate temperature on the texturing of LMO layer. The texturing of LMO layer was improved by increasing the substrate temperature. We investigated the effect of deposition rate on the texturing of LMO layer. The LMO layer has a good texture in the deposition rate range of 0.07-0.21 nm/s. We confirmed that deposition rate had little effect on the texturing of LMO layer in the deposition rate range. Sm 1Ba 2Cu 3O 7-d superconducting layer was deposited on the LMO(reactive)/IBAD-MgO template. I c and J c were 81.6 A and 1 MA/cm 2. This means that LMO layer deposited by reactive DC sputtering shows a good performance in superconductor coated conductor.

  10. TEM study of dislocations structure in In0.82Ga0.18As/InP heterostructure with InGaAs as buffer layer

    NASA Astrophysics Data System (ADS)

    Zhao, Liang; Guo, Zuo-xing; Yuan, De-zeng; Wei, Qiu-lin; Zhao, Lei

    2016-05-01

    In order to improve the quality of detector, In x Ga1- x As ( x=0.82) buffer layer has been introduced in In0.82Ga0.18As/InP heterostructure. Dislocation behavior of the multilayer is analyzed through plane and cross section [110] by transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). The dislocations are effectively suppressed in In x Ga1- x As ( x=0.82) buffer layer, and the density of dislocations in epilayer is reduced obviously. No lattice mismatch between buffer layer and epilayer results in no misfit dislocation (MD). The threading dislocations (TDs) are directly related to the multiplication of the MDs in buffer layer.

  11. Influence of substrate miscut angle on surface morphology and luminescence properties of AlGaN

    SciTech Connect

    Kusch, Gunnar Edwards, Paul R.; Bruckbauer, Jochen; Martin, Robert W.; Li, Haoning; Parbrook, Peter J.; Sadler, Thomas C.

    2014-03-03

    The influence of substrate miscut on Al{sub 0.5}Ga{sub 0.5} N layers was investigated using cathodoluminescence (CL) hyperspectral imaging and secondary electron imaging in an environmental scanning electron microscope. The samples were also characterized using atomic force microscopy and high resolution X-ray diffraction. It was found that small changes in substrate miscut have a strong influence on the morphology and luminescence properties of the AlGaN layers. Two different types are resolved. For low miscut angle, a crack-free morphology consisting of randomly sized domains is observed, between which there are notable shifts in the AlGaN near band edge emission energy. For high miscut angle, a morphology with step bunches and compositional inhomogeneities along the step bunches, evidenced by an additional CL peak along the step bunches, are observed.

  12. Hierarchical rendering of trees from precomputed multi-layer z-buffers

    SciTech Connect

    Max, N.

    1996-02-01

    Chen and Williams show how precomputed z-buffer images from different fixed viewing positions can be reprojected to produce an image for a new viewpoint. Here images are precomputed for twigs and branches at various levels in the hierarchical structure of a tree, and adaptively combined, depending on the position of the new viewpoint. The precomputed images contain multiple z levels to avoid missing pixels in the reconstruction, subpixel masks for anti-aliasing, and colors and normals for shading after reprojection.

  13. Synthesis of Vertically Aligned ZnO Nanorods on Ni-Based Buffer Layers Using a Thermal Evaporation Process

    NASA Astrophysics Data System (ADS)

    Kuo, Dong-Hau; He, Jheng-Yu; Huang, Ying-Sheng

    2012-03-01

    Uniform, vertically aligned ZnO nanorods have been grown mainly on Au-coated and ZnO-coated sapphire substrates, ZnO- and GaN-coated substrates, or self-catalyzing substrates. Conventionally, Ni-coated substrates have resulted in thick rods with diameter more than 250 nm, rods with nonuniform distribution in diameter, or rods with an alignment problem. In the best result in this paper, slender, uniform, vertically aligned, solely UV-emitting ZnO nanorods with diameter of 110 ± 25 nm and length of 30 ± 10 μm have been successfully grown at 700°C for 2 h on sapphire substrates covered with Ni-based buffer layers by using metallic zinc and oxygen as reactants. Scanning electron microscopy and room-temperature photoluminescence have been used to investigate the effects of process conditions on the slenderness and vertical alignment of the ZnO rods. To develop the desired ZnO nanorods, etched sapphire substrates, a second metallic Sn buffer layer on top of a spin-coated nickel oxide layer, polyvinyl alcohol binder at 10% concentration in solution of iron nitrate, and pyrolysis and reduction reactions were involved. Defect photoemission for thick ZnO rods is attributed to insufficient oxygen supply during the growth process with fixed oxygen flow rate.

  14. Growth of periodic ZnO nano-crystals on buffer layer patterned by interference laser irradiation

    NASA Astrophysics Data System (ADS)

    Nakamura, D.; Shimogaki, T.; Okazaki, K.; Higashihata, M.; Nakata, Y.; Okada, T.

    2013-03-01

    Zinc oxide (ZnO) nano-crystal is great interest for optoelectronic applications in particular ultraviolet (UV) region such as UV-LEDs, UV-lasers, etc. For the practical optoelectronic applications based on the ZnO nanocrystals, control of nanowire growth direction, shape, density, and position are essentially required. In our study, we introduced a ZnO buffer layer and interference laser irradiation to control the growth position of ZnO nanocrystals. In this presentation, structural and morphological characteristics of periodic ZnO nano-crystals synthesized by the nanoparticle-assisted pulsed laser deposition will be discussed.

  15. Nanometer-Scale Epitaxial Strain Release in Perovskite Heterostructures Using 'SrAlOx' Sliding Buffer Layers

    SciTech Connect

    Bell, Christopher

    2011-08-11

    We demonstrate the strain release of LaAlO{sub 3} epitaxial film on SrTiO{sub 3} (001) by inserting ultra-thin 'SrAlO{sub x}' buffer layers. Although SrAlO{sub x} is not a perovskite, nor stable as a single phase in bulk, epitaxy stabilizes the perovskite structure up to a thickness of 2 unit cells (uc). At a critical thickness of 3 uc of SrAlO{sub x}, the interlayer acts as a sliding buffer layer, and abruptly relieves the lattice mismatch between the LaAlO{sub 3} filmand the SrTiO{sub 3} substrate, while maintaining crystallinity. This technique may provide a general approach for strain relaxation of perovskite film far below the thermodynamic critical thickness. A central issue in heteroepitaxial filmgrowth is the inevitable difference in lattice constants between the filmand substrate. Due to this lattice mismatch, thin film are subjected to microstructural strain, which can have a significan effect on the filmproperties. This challenge is especially prominent in the rapidly developing fiel of oxide electronics, where much interest is focused on incorporating the emergent physical properties of oxides in devices. Although strain can be used to great effect to engineer unusual ground states, it is often deleterious for bulk first-orde phase transitions, which are suppressed by the strain and symmetry constraints of the substrate. While there are some reports discussing the control of the lattice mismatch in oxides using thick buffer layers, the materials choice, lattice-tunable range, and control of misfit dislocations are still limited. In this Letter, we report the fabrication of strain-relaxed LaAlO{sub 3} (LAO) thin film on SrTiO{sub 3} (STO) (001) using very thin 'SrAlO{sub x}' (SAO) buffer layers. Whereas for 1 or 2 pseudo-perovskite unit cells (uc) of SAO, the subsequent LAO filmis strained to the substrate, at a critical thickness of 3 uc the SAO interlayer abruptly relieves the lattice mismatch between the LAO and the STO, although maintaining the

  16. Distortions to current-voltage curves of cigs cells with sputtered Zinc(Oxygen,Sulfur) buffer layers

    NASA Astrophysics Data System (ADS)

    Song, Tao

    Sputtered-deposited Zn(O,S) is an attractive alternative to CdS for Cu(In,Ga)Se 2 (CIGS) thin-film solar cells' buffer layer. It has a higher band gap and thus allows greater blue photon collection to achieve higher photon current. The primary goal of the thesis is to investigate the effects of the secondary barrier at the buffer-absorber interface on the distortions to current-voltage (J-V) curves of sputtered-Zn(O,S)/CIGS solar cells. A straightforward photodiode model is employed in the numerical simulation to explain the physical mechanisms of the experimental J-V distortions including J-V crossover and red kink. It is shown that the secondary barrier is influenced by both the internal material properties, such as the conduction-band offset (CBO) and the doping density of Zn(O,S), and the external conditions, such as the light intensity and operating temperature. A key parameter for the sputter deposition of Zn(O,S) has been the oxygen fraction in the argon beam. It is found that the CBO varies with the oxygen fraction in the argon beam at a fixed temperature. With a greater CBO (DeltaEC>0.3 eV), the resulting energy barrier limits the electron current flowing across the interface and thus leads to the J-V distortion. Two different ZnS targets, non-indium and indium-doped one, were used to deposit the Zn(O,S) buffer layer. At the same oxygen fraction in argon beam, a non-In-doped Zn(O,S) buffer with a smaller amount of doping forms a greater secondary barrier to limit the electron current due to the compensation of the Zn(O,S) buffer layer. In addition, the temperature-dependent J-V crossover can be explained by the temperature-dependent impact of the secondary barrier - at lower temperature in the dark, the maximum distortion-free barrier is reduced and results in a more serious current limitation, indicating a greater J-V crossover. It is also found that, under low-intensity illumination, there is a lower doping density of Zn(O,S) due to a smaller amount of

  17. Reel-to-reel deposition of epitaxial double-sided MgO buffer layers for coated conductors

    NASA Astrophysics Data System (ADS)

    Xue, Yan; Xiong, Jie; Zhang, Yahui; Zhang, Fei; Zhao, Rui-Peng; Hui, Wang; Wang, Quiling; Cheng, Guo; Zhao, Xiao-Hui; Tao, Bo-Wan

    2016-06-01

    We have successfully employed a double-sided process to deposit MgO buffer layers on both sides of amorphous Y2O3 surface for double-sided YBa2Cu3O7-δ (YBCO) coated conductors (CCs) for the first time, the structure of which is of great prospect to improve the performance and cut the production cost. The biaxial textures of MgO buffer layer are noticeably affected by the ion energy and film thickness, which is demonstrated by X-ray diffraction. The best biaxial texture of double-sided MgO films shows ω-scan of (002) MgO and Φ-scan of (220) MgO yield full width at half maximum values of 4° and 7.8° for one side, respectively, as well as 3.5° and 6.7° for the other side. The subsequent double-sided YBCO films are deposited on the as-prepared MgO template with entire critical current of over 300 A/cm for both sides.

  18. Impact of buffer layer and Pt thickness on the interface structure and magnetic properties in (Co/Pt) multilayers

    NASA Astrophysics Data System (ADS)

    Bersweiler, M.; Dumesnil, K.; Lacour, D.; Hehn, M.

    2016-08-01

    The influence of Pt thickness on the interface structure (roughness / intermixing) and magnetic properties has been investigated for (Co / Pt) multilayers sputtered on a Pt or a thin oxide (MgO or AlO x ) buffer layer. When Pt thickness increases from 1.2 nm–2.2 nm, we observe that the effective anisotropy increases with the Pt thickness, simultaneously with the decrease of roughness, i.e. the occurrence of sharper interfaces. Perpendicular magnetic anisotropy (PMA) is still achieved on the oxide buffer layers, but with a lower effective anisotropy correlated to more perturbed interfaces. The detailed analysis of the saturation magnetization shows that: (i) M s is significantly enhanced in the case of rough/intermixed interfaces, which is attributed to and discussed in the framework of Pt induced polarization, (ii) the change in volume dipolar anisotropy is the main factor responsible for the reduction of K eff for systems grown on oxides. Beyond the major role of volume dipolar contribution that reduces PMA, a supplemental positive contribution promoting PMA can be invoked for rough interfaces and large M s (deposit on oxide). This contribution is consistent with a dipolar surface anisotropy term and increases for rough interfaces, in contrast to the Néel surface anisotropy. These opposite variations may interestingly lead to an enhanced anisotropy in (Co / Pt) stackings grown on oxides compared to systems deposited on Pt, i.e. with sharper interfaces.

  19. Impact of buffer layer and Pt thickness on the interface structure and magnetic properties in (Co/Pt) multilayers

    NASA Astrophysics Data System (ADS)

    Bersweiler, M.; Dumesnil, K.; Lacour, D.; Hehn, M.

    2016-08-01

    The influence of Pt thickness on the interface structure (roughness / intermixing) and magnetic properties has been investigated for (Co / Pt) multilayers sputtered on a Pt or a thin oxide (MgO or AlO x ) buffer layer. When Pt thickness increases from 1.2 nm-2.2 nm, we observe that the effective anisotropy increases with the Pt thickness, simultaneously with the decrease of roughness, i.e. the occurrence of sharper interfaces. Perpendicular magnetic anisotropy (PMA) is still achieved on the oxide buffer layers, but with a lower effective anisotropy correlated to more perturbed interfaces. The detailed analysis of the saturation magnetization shows that: (i) M s is significantly enhanced in the case of rough/intermixed interfaces, which is attributed to and discussed in the framework of Pt induced polarization, (ii) the change in volume dipolar anisotropy is the main factor responsible for the reduction of K eff for systems grown on oxides. Beyond the major role of volume dipolar contribution that reduces PMA, a supplemental positive contribution promoting PMA can be invoked for rough interfaces and large M s (deposit on oxide). This contribution is consistent with a dipolar surface anisotropy term and increases for rough interfaces, in contrast to the Néel surface anisotropy. These opposite variations may interestingly lead to an enhanced anisotropy in (Co / Pt) stackings grown on oxides compared to systems deposited on Pt, i.e. with sharper interfaces.

  20. Solid contact ion-selective electrodes with a well-controlled Co(II)/Co(III) redox buffer layer.

    PubMed

    Zou, Xu U; Cheong, Jia H; Taitt, Brandon J; Bühlmann, Philippe

    2013-10-01

    Solid contact ion-selective electrodes (ISEs) typically have an intermediate layer between the ion-selective membrane and the underlying solid electron conductor that is designed to reduce the irreproducibility and instability of the measured electromotive force (emf). Nevertheless, the electrode-to-electrode reproducibility of the emf of current solid contact ISEs is widely considered to be unsatisfactory. To address this problem, we report here a new method of constructing this intermediate layer based on the lipophilic redox buffer consisting of the Co(III) and Co(II) complexes of 1,10-phenanthroline ([Co(phen)3](3+/2+)) paired with tetrakis(pentafluorophenyl)borate as counterion. The resulting electrodes exhibit emf values with an electrode-to-electrode standard deviation as low as 1.7 mV after conditioning of freshly prepared electrodes for 1 h. While many prior examples of solid contact ISEs also used intermediate layers that contained redox active species, the selection of a balanced ratio of the reduced and oxidized species has typically been difficult and was often ignored, contributing to the emf irreproducibility. The ease of the control of the [Co(phen)3](3+)/[Co(phen)3](2+) ratio explains the high emf reproducibility, as confirmed by the emf decrease of 58 mV per 10-fold increase in the ratio of the reduced and oxidized redox buffer species. Use of a gold electrode modified with a self-assembled 1-hexanethiol monolayer as underlying electron conductor suppresses the formation of a water layer and results in an electrode-to-electrode standard deviation of E° of 1.0 mV after 2 weeks of exposure to KCl solution. PMID:24047234

  1. GaN Epitaxial Layer Grown with Conductive Al(x)Ga(1-x)N Buffer Layer on SiC Substrate Using Metal Organic Chemical Vapor Deposition.

    PubMed

    So, Byeongchan; Lee, Kyungbae; Lee, Kyungjae; Heo, Cheon; Pyeon, Jaedo; Ko, Kwangse; Jang, Jongjin; Nam, Okhyun

    2016-05-01

    This study investigated GaN epitaxial layer growth with a conductive Al(x)Ga(1-x)N buffer layer on n-type 4H-SiC by high-temperature metalorganic chemical vapor deposition (HT-MOCVD). The Al composition of the Al(x)Ga(1-x)N buffer was varied from 0% to 100%. In terms of the crystal quality of the GaN layer, 79% Al was the optimal composition of the Al(x)Ga(1-x)N buffer layer in our experiment. A vertical conductive structure was fabricated to measure the current voltage (I-V) characteristics as a function of Al composition, and the I-V curves showed that the resistance increased with increasing Al concentration of the Al(x)Ga(1-x)N buffer layer. PMID:27483845

  2. Thin, high quality GaInP compositionally graded buffer layers grown at high growth rates for metamorphic III-V solar cell applications

    NASA Astrophysics Data System (ADS)

    Garcia, I.; France, R. M.; Geisz, J. F.; Simon, J.

    2014-05-01

    The metamorphic growth of lattice-mismatched materials has allowed optimizing the bandgap combination in multijunction solar cells for the solar spectrum under consideration. Buffer structures are used to accommodate the lattice-mismatch by introducing dislocations and relaxing the material in a controlled way. However, the metamorphic buffers typically involve significant growth time and material usage, which increases the cost of these solar cells. In this work, the thinning of buffer structures with continuously, linearly graded misfit is addressed with the goal of increasing the cost-effectiveness of metamorphic multijunction solar cells. The relaxation dynamics and quality of the buffer layers analyzed were assessed by in-situ stress measurements and ex-situ measurements of residual strain, threading dislocation density and surface roughness. Their ultimate quality has been tested using these buffers as templates for the growth of 1 eV Ga0.73In0.27As solar cells. The deleterious effect of thinning the grade layer of these buffer structures from 2 to 1 μm was investigated. It is shown that prompting the relaxation of the buffer by using a stepwise misfit jump at the beginning of the grade layer improves the quality of the thinned buffer structure. The residual threading dislocation density of the optimized thin buffers, grown at a high growth rate of 7 μm/h, is 3×106 cm-2, and solar cells on these buffers exhibit near-ideal carrier collection efficiency and a Voc of 0.62 V at 1-sun direct terrestrial spectrum.

  3. Buffer transport mechanisms in intentionally carbon doped GaN heterojunction field effect transistors

    SciTech Connect

    Uren, Michael J.; Cäsar, Markus; Kuball, Martin; Gajda, Mark A.

    2014-06-30

    Temperature dependent pulsed and ramped substrate bias measurements are used to develop a detailed understanding of the vertical carrier transport in the buffer layers in a carbon doped GaN power heterojunction field effect transistor. Carbon doped GaN and multiple layers of AlGaN alloy are used in these devices to deliver an insulating and strain relieved buffer with high breakdown voltage capability. However, understanding of the detailed physical mechanism for its operation is still lacking. At the lowest electric fields (<10 MV/m), charge redistribution within the C doped layer is shown to occur by hole conduction in the valence band with activation energy 0.86 eV. At higher fields, leakage between the two-dimensional electron gas and the buffer dominates occurring by a Poole-Frenkel mechanism with activation energy ∼0.65 eV, presumably along threading dislocations. At higher fields still, the strain relief buffer starts to conduct by a field dependent process. Balancing the onset of these leakage mechanisms is essential to allow the build-up of positive rather than negative space charge, and thus minimize bulk-related current-collapse in these devices.

  4. Device performance and lifetime of polymer:fullerene solar cells with UV-ozone-irradiated hole-collecting buffer layers.

    PubMed

    Lee, Seungsoo; Nam, Sungho; Lee, Hyena; Kim, Hwajeong; Kim, Youngkyoo

    2011-11-18

    We report the influence of UV-ozone irradiation of the hole-collecting buffer layers on the performance and lifetime of polymer:fullerene solar cells. UV-ozone irradiation was targeted at the surface of the poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) layers by varying the irradiation time up to 600 s. The change of the surface characteristics in the PEDOT:PSS after UV-ozone irradiation was measured by employing optical absorption spectroscopy, photoelectron yield spectroscopy, and contact angle measurements, while Raman and X-ray photoelectron spectroscopy techniques were introduced for more microscopic analysis. Results showed that the UV-ozone irradiation changed the chemical structure/composition of the surface of the PEDOT:PSS layers leading to the gradual increase of ionization potential with irradiation time in the presence of up-and-down variations in the contact angle (polarity). This surface property change was attributed to the formation of oxidative components, as evidenced by XPS and Auger electron images, which affected the sheet resistance of the PEDOT:PSS layers. Interestingly, device performance was slightly improved by short irradiation (up to 10 s), whereas it was gradually decreased by further irradiation. The short-duration illumination test showed that the lifetime of solar cells with the UV-ozone irradiated PEDOT:PSS layer was improved due to the protective role of the oxidative components formed upon UV-ozone irradiation against the attack of sulfonic acid groups in the PEDOT:PSS layer to the active layer.

  5. Device performance and lifetime of polymer:fullerene solar cells with UV-ozone-irradiated hole-collecting buffer layers.

    PubMed

    Lee, Seungsoo; Nam, Sungho; Lee, Hyena; Kim, Hwajeong; Kim, Youngkyoo

    2011-11-18

    We report the influence of UV-ozone irradiation of the hole-collecting buffer layers on the performance and lifetime of polymer:fullerene solar cells. UV-ozone irradiation was targeted at the surface of the poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) layers by varying the irradiation time up to 600 s. The change of the surface characteristics in the PEDOT:PSS after UV-ozone irradiation was measured by employing optical absorption spectroscopy, photoelectron yield spectroscopy, and contact angle measurements, while Raman and X-ray photoelectron spectroscopy techniques were introduced for more microscopic analysis. Results showed that the UV-ozone irradiation changed the chemical structure/composition of the surface of the PEDOT:PSS layers leading to the gradual increase of ionization potential with irradiation time in the presence of up-and-down variations in the contact angle (polarity). This surface property change was attributed to the formation of oxidative components, as evidenced by XPS and Auger electron images, which affected the sheet resistance of the PEDOT:PSS layers. Interestingly, device performance was slightly improved by short irradiation (up to 10 s), whereas it was gradually decreased by further irradiation. The short-duration illumination test showed that the lifetime of solar cells with the UV-ozone irradiated PEDOT:PSS layer was improved due to the protective role of the oxidative components formed upon UV-ozone irradiation against the attack of sulfonic acid groups in the PEDOT:PSS layer to the active layer. PMID:22038984

  6. [Study on the Effects of Alq₃:CsF Composite Cathode Buffer Layer on the Performances of CuPc/C₆₀ Solar Cells].

    PubMed

    Zhao, Huan-bin; Sun, Qin-jun; Zhou, Miao; Gao, Li-yan; Hao, Yu-ying; Shi, Fang

    2016-02-01

    This paper introduces the methods improving the performance and stability of copper-phthalocyanine(CuPc) / fullerene (C₆₀) small molecule solar cells by using tris-(8-hydroxyquinoline) aluminum(Alq₃): cesium fluoride(CsF) composite cathode buffer layer. The device with Alq₃:CsF composite cathode buffer layer with a 4 wt. % CsF at a thickness of 5 nm exhibits a power conversion efficiency (PCE) of up to 0.76%, which is an improvement of 49%, compared to a device with single Alq₃ cathode buffer layer and half-lifetime of the cell in air at ambient circumstance without any encapsulation is almost 9.8 hours, 6 times higher than that of without buffer layer, so the stability is maintained. The main reason of the device performance improvement is that doping of CsF can adjust the interface energy alignment, optimize the electronic transmission characteristics of Alq₃ and improve the short circuit current and the fill factor of the device using ultraviolet-visible absorption, external quantum efficiency and single-electron devices. Placed composite cathode buffer layer devices with different time in the air, by comparing and analyzing current voltage curve, Alq₃:CsF can maintain a good stability as Alq₃. Alq₃:CsF layer can block the diffusion of oxygen and moisture so completely as to improve the lifetime of the device. PMID:27209725

  7. Ca/Alq3 hybrid cathode buffer layer for the optimization of organic solar cells based on a planar heterojunction

    NASA Astrophysics Data System (ADS)

    El Jouad, Z.; Barkat, L.; Stephant, N.; Cattin, L.; Hamzaoui, N.; Khelil, A.; Ghamnia, M.; Addou, M.; Morsli, M.; Béchu, S.; Cabanetos, C.; Richard-Plouet, M.; Blanchard, P.; Bernède, J. C.

    2016-11-01

    Use of efficient anode cathode buffer layer (CBL) is crucial to improve the efficiency of organic photovoltaic cells. Here we show that using a double CBL, Ca/Alq3, allows improving significantly cell performances. The insertion of Ca layer facilitates electron harvesting and blocks hole collection, leading to improved charge selectivity and reduced leakage current, whereas Alq3 blocks excitons. After optimisation of this Ca/Alq3 CBL using CuPc as electron donor, it is shown that it is also efficient when SubPc is substituted to CuPc in the cells. In that case we show that the morphology of the SubPc layer, and therefore the efficiency of the cells, strongly depends on the deposition rate of the SubPc film. It is necessary to deposit slowly (0.02 nm/s) the SubPc films because at higher deposition rate (0.06 nm/s) the films are porous, which induces leakage currents and deterioration of the cell performances. The SubPc layers whose formations are kinetically driven at low deposition rates are more uniform, whereas those deposited faster exhibit high densities of pinholes.

  8. UV-ozone-treated ultra-thin NaF film as anode buffer layer on organic light emitting devices.

    PubMed

    Chen, Yu-Cheng; Kao, Po-Ching; Chu, Sheng-Yuan

    2010-06-21

    An ultra-thin NaF film was thermally deposited between ITO and NPB as the buffer layer and then treated with the ultraviolet (UV) ozone, in the fabrication of organic light emitting diodes (ITO/NaF/NPB/Alq(3)/LiF/Al) to study its effect on hole-injection properties. The treatment drastically transforms the role of NaF film from hole-blocking to hole-injecting. This transformation is elucidated using hole-only devices, energy band measurement, surface energy, surface polarity, and X-ray photoelectron spectra. With the optimal thickness (3 nm) of the UV-ozone-treated NaF layer, the device performance is significantly improved, with a turn-on voltage, maximum luminance, and maximum current efficiency of 2.5 V, 15700 cd/m(2), and 4.9 cd/A, respectively. Results show that NaF film is not only a hole-blocking layer, but also a promising hole-injecting layer after UV-ozone treatment.

  9. UV-ozone-treated ultra-thin NaF film as anode buffer layer on organic light emitting devices.

    PubMed

    Chen, Yu-Cheng; Kao, Po-Ching; Chu, Sheng-Yuan

    2010-06-21

    An ultra-thin NaF film was thermally deposited between ITO and NPB as the buffer layer and then treated with the ultraviolet (UV) ozone, in the fabrication of organic light emitting diodes (ITO/NaF/NPB/Alq(3)/LiF/Al) to study its effect on hole-injection properties. The treatment drastically transforms the role of NaF film from hole-blocking to hole-injecting. This transformation is elucidated using hole-only devices, energy band measurement, surface energy, surface polarity, and X-ray photoelectron spectra. With the optimal thickness (3 nm) of the UV-ozone-treated NaF layer, the device performance is significantly improved, with a turn-on voltage, maximum luminance, and maximum current efficiency of 2.5 V, 15700 cd/m(2), and 4.9 cd/A, respectively. Results show that NaF film is not only a hole-blocking layer, but also a promising hole-injecting layer after UV-ozone treatment. PMID:20588585

  10. Self-assembled, aligned ZnO nanorod buffer layers for high-current-density, inverted organic photovoltaics.

    PubMed

    Rao, Arun D; Karalatti, Suresh; Thomas, Tiju; Ramamurthy, Praveen C

    2014-10-01

    Two different soft-chemical, self-assembly-based solution approaches are employed to grow zinc oxide (ZnO) nanorods with controlled texture. The methods used involve seeding and growth on a substrate. Nanorods with various aspect ratios (1-5) and diameters (15-65 nm) are grown. Obtaining highly oriented rods is determined by the way the substrate is mounted within the chemical bath. Furthermore, a preheat and centrifugation step is essential for the optimization of the growth solution. In the best samples, we obtain ZnO nanorods that are almost entirely oriented in the (002) direction; this is desirable since electron mobility of ZnO is highest along this crystallographic axis. When used as the buffer layer of inverted organic photovoltaics (I-OPVs), these one-dimensional (1D) nanostructures offer: (a) direct paths for charge transport and (b) high interfacial area for electron collection. The morphological, structural, and optical properties of ZnO nanorods are studied using scanning electron microscopy, X-ray diffraction, and ultraviolet-visible light (UV-vis) absorption spectroscopy. Furthermore, the surface chemical features of ZnO films are studied using X-ray photoelectron spectroscopy and contact angle measurements. Using as-grown ZnO, inverted OPVs are fabricated and characterized. For improving device performance, the ZnO nanorods are subjected to UV-ozone irradiation. UV-ozone treated ZnO nanorods show: (i) improvement in optical transmission, (ii) increased wetting of active organic components, and (iii) increased concentration of Zn-O surface bonds. These observations correlate well with improved device performance. The devices fabricated using these optimized buffer layers have an efficiency of ∼3.2% and a fill factor of 0.50; this is comparable to the best I-OPVs reported that use a P3HT-PCBM active layer.

  11. Improved high temperature integration of Al{sub 2}O{sub 3} on MoS{sub 2} by using a metal oxide buffer layer

    SciTech Connect

    Son, Seokki; Choi, Moonseok; Kim, Dohyung; Choi, Changhwan; Yu, Sunmoon

    2015-01-12

    We deposited a metal oxide buffer layer before atomic layer deposition (ALD) of Al{sub 2}O{sub 3} onto exfoliated molybdenum disulfide (MoS{sub 2}) in order to accomplish enhanced integration. We demonstrate that even at a high temperature, functionalization of MoS{sub 2} by means of a metal oxide buffer layer can effectively provide nucleation sites for ALD precursors, enabling much better surface coverage of Al{sub 2}O{sub 3}. It is shown that using a metal oxide buffer layer not only allows high temperature ALD process, resulting in highly improved quality of Al{sub 2}O{sub 3}/MoS{sub 2} interface, but also leaves MoS{sub 2} intact.

  12. Evaluation of methods for application of epitaxial buffer and superconductor layers

    SciTech Connect

    1999-03-30

    The recent achievements of critical currents exceeding million amperes per square centimeter at 77K in YBCO deposited over suitably textured substrate have stimulated interest in the potential applications of coated conductors at high temperatures and in high magnetic fields. Currently, ion-beam assisted deposition (IBAD), and rolling assisted bi-axially textured substrate (RABiTS), represent two available options for obtaining textured substrates. For applying suitable coatings of buffer and high temperature superconductor (HTS) material over textured substrates, several options are available which include sputtering, electron-beam evaporation, laser ablation, electrophoresis, chemical vapor deposition (including metal organics chemical vapor deposition), sol-gel, metal organics decomposition, electrodeposition and aerosol/spray pyrolysis. A commercial continuous long-length wire/tape manufacturing scheme developed out of any suitable combination of the above techniques would consist of operations involving preparation of the substrate and application of buffer, HTS and passivation/insulation materials and special treatment steps such as post-annealing. These operations can be effected by various process parameters that can be classified into chemistry, materials, engineering and environmental related parameters. Under the DOE-sponsored program, to carry out an engineering evaluation, first, the process flow schemes were developed for various candidate options identifying the major operating steps, process conditions, and process streams. Next, to evaluate quantifiable parameters such as process severity (e.g. temperature and pressure), coating thickness and deposition rate for HTS material, achieved maximum J{sub c} value (for films >1{micro}m thick) and cost of chemical and material utilization efficiency, the multi-attribute method was used to determine attributes/merits for various parameters and candidate options. To determine similar attribute values for the

  13. Diffusion of ionizable solutes across planar lipid bilayer membranes: boundary-layer pH gradients and the effect of buffers.

    PubMed

    Xiang, T X; Anderson, B D

    1993-11-01

    The diffusion of weak acids or bases across planar lipid bilayer membranes results in aqueous boundary layer pH gradients. If not properly taken into account, such pH gradients will lead to errors in estimated membrane permeability coefficients, Pm. The role of the permeant concentration, the buffer capacity, and the physicochemical properties of both permeant and buffer on the magnitude and impact of such pH gradients have been explored. A theoretical model has been developed to describe the diffusion of both permeant and buffer species. Significant pH gradients develop depending on solution pH and the pKa's, concentrations, and Pm values of both permeant and buffer. The relative error in experimentally determined Pm values was calculated as the ratio, r, between apparent Pm values (obtained from flux measurements using an equation which neglected boundary layer pH gradients) and its true value. Simulated r values ranged from 1 (0% error) to < 0.01 (> 100% error) for weak acids, decreasing with decreasing buffer capacity and increasing solute flux. The buffer capacity required for an r > 0.95 was calculated versus pH for permeants varying in pKa and Pm. Membrane-permeable buffers significantly reduce boundary layer pH gradients through a feedback effect due to buffer cotransport. Apparent Pm values of p-hydroxymethyl benzoic acid across lecithin bilayer membranes at 25 degrees C were obtained as a function of permeant concentration in various buffers [glycolic, 2-(N-morpholino)ethane-sulfonic, and formic acids]. Predictions agreed closely with experimental fluxes. PMID:8290481

  14. Development of Production PVD-AIN Buffer Layer System and Processes to Reduce Epitaxy Costs and Increase LED Efficiency

    SciTech Connect

    Cerio, Frank

    2013-09-14

    The DOE has set aggressive goals for solid state lighting (SSL) adoption, which require manufacturing and quality improvements for virtually all process steps leading to an LED luminaire product. The goals pertinent to this proposed project are to reduce the cost and improve the quality of the epitaxial growth processes used to build LED structures. The objectives outlined in this proposal focus on achieving cost reduction and performance improvements over state-of-the-art, using technologies that are low in cost and amenable to high efficiency manufacturing. The objectives of the outlined proposal focus on cost reductions in epitaxial growth by reducing epitaxy layer thickness and hetero-epitaxial strain, and by enabling the use of larger, less expensive silicon substrates and would be accomplished through the introduction of a high productivity reactive sputtering system and an effective sputtered aluminum-nitride (AlN) buffer/nucleation layer process. Success of the proposed project could enable efficient adoption of GaN on-silicon (GaN/Si) epitaxial technology on 150mm silicon substrates. The reduction in epitaxy cost per cm{sup 2} using 150mm GaN-on-Si technology derives from (1) a reduction in cost of ownership and increase in throughput for the buffer deposition process via the elimination of MOCVD buffer layers and other throughput and CoO enhancements, (2) improvement in brightness through reductions in defect density, (3) reduction in substrate cost through the replacement of sapphire with silicon, and (4) reduction in non-ESD yield loss through reductions in wafer bow and temperature variation. The adoption of 150mm GaN/Si processing will also facilitate significant cost reductions in subsequent wafer fabrication manufacturing costs. There were three phases to this project. These three phases overlap in order to aggressively facilitate a commercially available production GaN/Si capability. In Phase I of the project, the repeatability of the performance

  15. Improved UV photoresponse properties of high-quality ZnO thin films through the use of a ZnO buffer layer on flexible polyimide substrates

    NASA Astrophysics Data System (ADS)

    Kim, Mincheol; Leem, Jae-Young; Son, Jeong-Sik

    2016-03-01

    An oxidized ZnO buffer layer was prepared by using thermal oxidation of a Zn buffer layer on a polyimide (PI) substrate; then, ZnO thin films with (sample 1) and without (sample 2) an oxidized ZnO buffer layer were grown by using the sol-gel spin-coating method. The intensities of the ZnO (002) diffraction peaks observed in sample 1 were stronger than those observed in sample 2, implying that the crystal quality was enhanced by the oxidized ZnO buffer layer. Moreover, the residual stress of sample 1 was reduced compared to that of sample 2 due to the decreased number of defects. Sample 2 exhibited defect-related deep-level orange-yellow emissions, which almost disappeared with the introduction of the ZnO buffer layer (sample 1). The values of the responsivity were 0.733 (sample 1) and 0.066 (sample 2) mA/W; therefore, the proposed method could provide a pathway to the easy fabrication of fast-response UV sensors.

  16. Optimization of the ZnS Buffer Layer by Chemical Bath Deposition for Cu(In,Ga)Se2 Solar Cells.

    PubMed

    Jeon, Dong-Hwan; Hwang, Dae-Kue; Kim, Dae-Hwan; Kang, Jin-Kyu; Lee, Chang-Seop

    2016-05-01

    We evaluated a ZnS buffer layer prepared using a chemical bath deposition (CBD) process for application in cadmium-free Cu(In,Ga)Se2 (CIGS) solar cells. The ZnS buffer layer showed good transmittance (above 90%) in the spectral range from 300 to 800 nm and was non-toxic compared with the CdS buffer layers normally used in CIGS solar cells. The CBD process was affected by several deposition conditions. The deposition rate was dependent on the ammonia concentration (complexing agent). When the ammonia concentration was either too high or low, a decrease in the deposition rate was observed. In addition, post heat treatments at high temperatures had detrimental influences on the ZnS buffer layers because portions of the ZnS thin films were transformed into ZnO. With optimized deposition conditions, a CIGS solar cell with a ZnS buffer layer showed an efficiency of 14.18% with a 0.23 cm2 active area under 100 mW/cm2 illumination.

  17. Optimization of the ZnS Buffer Layer by Chemical Bath Deposition for Cu(In,Ga)Se2 Solar Cells.

    PubMed

    Jeon, Dong-Hwan; Hwang, Dae-Kue; Kim, Dae-Hwan; Kang, Jin-Kyu; Lee, Chang-Seop

    2016-05-01

    We evaluated a ZnS buffer layer prepared using a chemical bath deposition (CBD) process for application in cadmium-free Cu(In,Ga)Se2 (CIGS) solar cells. The ZnS buffer layer showed good transmittance (above 90%) in the spectral range from 300 to 800 nm and was non-toxic compared with the CdS buffer layers normally used in CIGS solar cells. The CBD process was affected by several deposition conditions. The deposition rate was dependent on the ammonia concentration (complexing agent). When the ammonia concentration was either too high or low, a decrease in the deposition rate was observed. In addition, post heat treatments at high temperatures had detrimental influences on the ZnS buffer layers because portions of the ZnS thin films were transformed into ZnO. With optimized deposition conditions, a CIGS solar cell with a ZnS buffer layer showed an efficiency of 14.18% with a 0.23 cm2 active area under 100 mW/cm2 illumination. PMID:27483938

  18. Recombination-current suppression in GaAs p-n junctions grown on AlGaAs buffer layers by molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Rancour, D. P.; Melloch, M. R.; Pierret, R. F.; Lundstrom, M. S.; Klausmeier-Brown, M. E.; Kyono, C. S.

    1987-08-01

    n+pp+GaAs and n+pP+ GaAs/GaAs/Al0.3Ga0.7As mesa diodes have been fabricated from films grown by molecular-beam epitaxy. The diodes made from films employing an AlGaAs buffer layer show marked improvements (a factor of 5 reduction) in recombination current densities. Deep level transient spectroscopy measurements moreover indicate that deep level concentrations are reduced by the AlGaAs buffer.

  19. Ideal p-n Diode Current Equation for Organic Heterojunction using a Buffer Layer: Derivation and Numerical Study

    NASA Astrophysics Data System (ADS)

    Kim, SeongMin; Ha, Jaewook; Kim, Jin-Baek

    2016-04-01

    The equation of p-n diode current-voltage (J-V) of an organic heterojunction (HJ) including a hole and electron buffer layer is derived, and its characteristics are numerically simulated based on a polaron-pair model Giebink et al. (Forrest, Phys. Rev. B 82; 1-12, 2010). In particular, the correlation between a fraction of the potential drop for an electron/hole buffer ( δ e - b / δ h - b ) and for a donor (D)/acceptor (A) ( δ D / δ A ) is numerically investigated for J-V curves. As a result, the lowest diode current (DC) is obtained for the condition of δ e - b + δ A ≅ 0 or δ D + δ h - b ≅ 1. It is suggested that it is important to characterize the lowest DC curve for the state of D/A blending with a condition of a fraction of the potential drop ( δ e - b / δ h - b ). Under these circumstances, the transport of holes ( h +) from a DC source at the reverse bias is effectively limited.

  20. Epitaxial strontium titanate films grown by atomic layer deposition on SrTiO{sub 3}-buffered Si(001) substrates

    SciTech Connect

    McDaniel, Martin D.; Posadas, Agham; Ngo, Thong Q.; Dhamdhere, Ajit; Smith, David J.; Demkov, Alexander A.; Ekerdt, John G.

    2013-01-15

    Epitaxial strontium titanate (STO) films have been grown by atomic layer deposition (ALD) on Si(001) substrates with a thin STO buffer layer grown by molecular beam epitaxy (MBE). Four unit cells of STO grown by MBE serve as the surface template for ALD growth. The STO films grown by ALD are crystalline as-deposited with minimal, if any, amorphous SiO{sub x} layer at the STO-Si interface. The growth of STO was achieved using bis(triisopropylcyclopentadienyl)-strontium, titanium tetraisopropoxide, and water as the coreactants at a substrate temperature of 250 Degree-Sign C. In situ x-ray photoelectron spectroscopy (XPS) analysis revealed that the ALD process did not induce additional Si-O bonding at the STO-Si interface. Postdeposition XPS analysis also revealed sporadic carbon incorporation in the as-deposited films. However, annealing at a temperature of 250 Degree-Sign C for 30 min in moderate to high vacuum (10{sup -6}-10{sup -9} Torr) removed the carbon species. Higher annealing temperatures (>275 Degree-Sign C) gave rise to a small increase in Si-O bonding, as indicated by XPS, but no reduced Ti species were observed. X-ray diffraction revealed that the as-deposited STO films were c-axis oriented and fully crystalline. A rocking curve around the STO(002) reflection gave a full width at half maximum of 0.30 Degree-Sign {+-} 0.06 Degree-Sign for film thicknesses ranging from 5 to 25 nm. Cross-sectional transmission electron microscopy revealed that the STO films were continuous with conformal growth to the substrate and smooth interfaces between the ALD- and MBE-grown STO. Overall, the results indicate that thick, crystalline STO can be grown on Si(001) substrates by ALD with minimal formation of an amorphous SiO{sub x} layer using a four-unit-cell STO buffer layer grown by MBE to serve as the surface template.

  1. Evaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates

    DOE PAGES

    Ren, Fan; Pearton, Stephen J.; Ahn, Shihyun; Lin, Yi -Hsuan; Machuca, Francisco; Weiss, Robert; Welsh, Alex; McCartney, Martha R.; Smith, David J.; Kravchenko, Ivan I.

    2016-09-21

    Here, AlGaN/GaN high electron mobility transistors (HEMTs) have been grown on sapphire substrates, using ZrTi buffer layers to provide in-plane lattice-matching to hexagonal GaN. X-ray diffraction (XRD) as well as cross-section transmission electron microscopy (TEM) were used to assess the quality of the HEMT structure. The XRD 2θ scans showed full-width-at-half-maximum values of 0.16°, 0.07°, and 0.08° for ZrTi alloy, GaN buffer layer, and the entire HEMT structure, respectively. TEM studies of the GaN buffer layer and the AlN/ZrTi/AlN stack showed the importance of growing thin AlN buffer layers on the ZrTi layer prior to growth of the GaN buffermore » layer. The density of threading dislocations in the GaN channel layer of the HEMT structure was estimated to be in the 108 cm–2 range. The HEMT device exhibited a saturation drain current density of 820 mA/mm, and the channel of the fabricated HEMTs could be well modulated. A cutoff frequency (fT) of 8.9 GHz and a maximum frequency of oscillation (fmax) of 17.3 GHz were achieved for HEMTs with gate dimensions of 1 × 200 μm.« less

  2. Finding the lost open-circuit voltage in polymer solar cells by UV-ozone treatment of the nickel acetate anode buffer layer.

    PubMed

    Wang, Fuzhi; Sun, Gang; Li, Cong; Liu, Jiyan; Hu, Siqian; Zheng, Hua; Tan, Zhan'ao; Li, Yongfang

    2014-06-25

    Efficient polymer solar cells (PSCs) with enhanced open-circuit voltage (Voc) are fabricated by introducing solution-processed and UV-ozone (UVO)-treated nickel acetate (O-NiAc) as an anode buffer layer. According to X-ray photoelectron spectroscopy data, NiAc partially decomposed to NiOOH during the UVO treatment. NiOOH is a dipole species, which leads to an increase in the work function (as confirmed by ultraviolet photoemission spectroscopy), thus benefitting the formation of ohmic contact between the anode and photoactive layer and leading to increased Voc. In addition, the UVO treatment improves the wettability between the substrate and solvent of the active layer, which facilitates the formation of an upper photoactive layer with better morphology. Further, the O-NiAc layer can decrease the series resistance (Rs) and increase the parallel resistance (Rp) of the devices, inducing enhanced Voc in comparison with the as-prepared NiAc-buffered control devices without UVO treatment. For PSCs based on the P3HT:PCBM system, Voc increases from 0.50 to 0.60 V after the NiAc buffer layer undergoes UVO treatment. Similarly, in the P3HT:ICBA system, the Voc value of the device with a UVO-treated NiAc buffer layer increases from 0.78 to 0.88 V, showing an enhanced power conversion efficiency of 6.64%.

  3. Finding the lost open-circuit voltage in polymer solar cells by UV-ozone treatment of the nickel acetate anode buffer layer.

    PubMed

    Wang, Fuzhi; Sun, Gang; Li, Cong; Liu, Jiyan; Hu, Siqian; Zheng, Hua; Tan, Zhan'ao; Li, Yongfang

    2014-06-25

    Efficient polymer solar cells (PSCs) with enhanced open-circuit voltage (Voc) are fabricated by introducing solution-processed and UV-ozone (UVO)-treated nickel acetate (O-NiAc) as an anode buffer layer. According to X-ray photoelectron spectroscopy data, NiAc partially decomposed to NiOOH during the UVO treatment. NiOOH is a dipole species, which leads to an increase in the work function (as confirmed by ultraviolet photoemission spectroscopy), thus benefitting the formation of ohmic contact between the anode and photoactive layer and leading to increased Voc. In addition, the UVO treatment improves the wettability between the substrate and solvent of the active layer, which facilitates the formation of an upper photoactive layer with better morphology. Further, the O-NiAc layer can decrease the series resistance (Rs) and increase the parallel resistance (Rp) of the devices, inducing enhanced Voc in comparison with the as-prepared NiAc-buffered control devices without UVO treatment. For PSCs based on the P3HT:PCBM system, Voc increases from 0.50 to 0.60 V after the NiAc buffer layer undergoes UVO treatment. Similarly, in the P3HT:ICBA system, the Voc value of the device with a UVO-treated NiAc buffer layer increases from 0.78 to 0.88 V, showing an enhanced power conversion efficiency of 6.64%. PMID:24878826

  4. Growth and characterization of ZnIn 2Se 4 buffer layer on CuInSe 2 thin films

    NASA Astrophysics Data System (ADS)

    Sun, Xianzhong; He, Yue; Feng, Jiayou

    2009-12-01

    The p-type CuInSe 2 (CIS) films were prepared by electrodeposition following the vacuum annealing process. Zn element was diffused into the CIS film samples at 350 °C by heating Zn grains in vacuum. Then, ZnIn 2Se 4 (ZIS) buffer layer was fabricated on CIS thin film by this thermal diffusion process. The formation of ZIS phase was confirmed by X-ray diffraction pattern (XRD), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). Dark I- V measurement shows that the Zn-doped CIS (0.89 at%)/Mo structure reveals the rectifying property, which indicates that a p-n junction was formed.

  5. Solvent effects of a dimethyldicyanoquinonediimine buffer layer as N-type material on the performance of organic photovoltaic cells.

    PubMed

    Yang, Eui Yeol; Oh, Se Young

    2014-08-01

    In the present work, we have fabricated organic photovoltaic cells consisting of ITO/PEDOT:PSS/P3HT:PCBM/DMDCNQI/Al using a dip-coating method with various solvent systems. We have investigated solvent effects (such as solubility, viscosity and vapor pressure) in deposition of a thin DMDCNQI buffer layer on the performance of organic photovoltaic cells. The solvent system which had low viscosity and good solubility properties, made a dense and uniform DMDCNQI ultra thin film, resulting in a high performance device. In particular, a prepared organic photovoltaic cell was fabricated using a cosolvent system (methanol:methylenechloride = 3:1) and showed a maximum power conversion efficiency of 4.53%.

  6. Structural characterization of strained silicon grown on a SiGe buffer layer

    NASA Astrophysics Data System (ADS)

    Jang, J. H.; Phen, M. S.; Gerger, A.; Jones, K. S.; Hansen, J. L.; Larsen, A. N.; Craciun, V.

    2008-03-01

    The microstructure of about 50 nm thick strained-Si/Si0.7Ge0.3/graded-SiGe/Si-substrate layers grown by MBE (molecular beam epitaxy) was characterized using high-resolution x-ray based characterization techniques. The degree of relaxation of the Si-capping layer after a thermal anneal at 800 °C for 30 min was determined using reciprocal space map (RSM) scans recorded around the (1 1 3) diffraction plane. However, since a RSM is not suitable when the strain relaxation is very small, x-ray reflectivity (XRR) and omega rocking curves (ω-RCs) were employed for the relaxation study. XRR spectra were collected and analyzed to obtain thickness, Ge concentration and surface/interfacial roughness information of the as-grown and annealed samples. ω-RCs were performed in order to investigate the crystalline quality of the samples. It was found that the annealed strained layer showed higher Lorentzian fraction in ω-RCs and misfit defect density which were caused by strain relaxation. In addition, the results showed that after the annealing process the broadening in the tail region of the ω-RCs was indicative of a change in the coherence length distribution of the crystallite size. The misfit defects and surface morphology obtained from transmission electron microscopy (TEM) and atomic force microscopy (AFM) investigations were consistent with results obtained from the x-ray based characterization techniques.

  7. Electrical detection of kidney injury molecule-1 with AlGaN /GaN high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Wang, H. T.; Kang, B. S.; Ren, F.; Pearton, S. J.; Johnson, J. W.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.

    2007-11-01

    AlGaN /GaN high electron mobility transistors (HEMTs) were used to detect kidney injury molecule-1 (KIM-1), an important biomarker for early kidney injury detection. The gate region consisted of 5nm gold deposited onto the AlGaN surface. The gold was conjugated to highly specific KIM-1 antibodies through a self-assembled monolayer of thioglycolic acid. The HEMT source-drain current showed a clear dependence on the KIM-1 concentration in phosphate-buffered saline solution. The limit of detection was 1ng/ml using a 20×50μm2 gate sensing area. This approach shows potential for both preclinical and clinical kidney injury diagnosis with accurate, rapid, noninvasive, and high throughput capabilities.

  8. Effect of dopent on the structural and optical properties of ZnS thin film as a buffer layer in solar cell application

    SciTech Connect

    Vashistha, Indu B. Sharma, S. K.; Sharma, Mahesh C.; Sharma, Ramphal

    2015-08-28

    In order to find the suitable alternative of toxic CdS buffer layer, deposition of pure ZnS and doped with Al by chemical bath deposition method have been reported. Further as grown pure and doped thin films have been annealed at 150°C. The structural and surface morphological properties have been characterized by X-Ray diffraction (XRD) and Atomic Force Microscope (AFM).The XRD analysis shows that annealed thin film has been polycrystalline in nature with sphalerite cubic crystal structure and AFM images indicate increment in grain size as well as growth of crystals after annealing. Optical measurement data give band gap of 3.5 eV which is ideal band gap for buffer layer for solar cell suggesting that the obtained ZnS buffer layer is suitable in a low-cost solar cell.

  9. The effects of buffer layers on the performance and stability of flexible InGaZnO thin film transistors on polyimide substrates

    SciTech Connect

    Ok, Kyung-Chul; Park, Jin-Seong E-mail: jsparklime@hanyang.ac.kr; Ko Park, Sang-Hee; Kim, H. E-mail: jsparklime@hanyang.ac.kr; Hwang, Chi-Sun; Soo Shin, Hyun; Bae, Jonguk

    2014-02-10

    We demonstrated the fabrication of flexible amorphous indium gallium zinc oxide thin-film transistors (TFTs) on high-temperature polyimide (PI) substrates, which were debonded from the carrier glass after TFT fabrication. The application of appropriate buffer layers on the PI substrates affected the TFT performance and stability. The adoption of the SiN{sub x}/AlO{sub x} buffer layers as water and hydrogen diffusion barriers significantly improved the device performance and stability against the thermal annealing and negative bias stress, compared to single SiN{sub x} or SiO{sub x} buffer layers. The substrates could be bent down to a radius of curvature of 15 mm and the devices remained normally functional.

  10. Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

    NASA Astrophysics Data System (ADS)

    Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Rajan, Siddharth

    2016-09-01

    Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and the light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polarization engineered tunnel junctions for ultra-wide bandgap AlGaN (Al mole fraction >50%) materials towards highly efficient UV LEDs. We demonstrate that polarization-induced three dimensional charge is beneficial in reducing tunneling barriers especially for high composition AlGaN tunnel junctions. The design of graded tunnel junction structures could lead to low tunneling resistance below 10-3 Ω cm2 and low voltage consumption below 1 V (at 1 kA/cm2) for high composition AlGaN tunnel junctions. Experimental demonstration of 292 nm emission was achieved through non-equilibrium hole injection into wide bandgap materials with bandgap energy larger than 4.7 eV, and detailed modeling of tunnel junctions shows that they can be engineered to have low resistance and can enable efficient emitters in the UV-C wavelength range.

  11. Strain-driven synthesis of <112> direction InAs nanowires in V-grooved trenches on Si using InP/GaAs buffer layers

    NASA Astrophysics Data System (ADS)

    Li, Shiyan; Zhou, Xuliang; Kong, Xiangting; Li, Mengke; Mi, Junping; Wang, Mengqi; Pan, Jiaoqing

    2016-09-01

    The catalyst-free metal organic vapor phase epitaxial growth of InAs nanowires on silicon (001) substrates is investigated by using selectively grown InP/GaAs buffer layers in V-grooved trenches. A strain-driven mechanism of self-aligned <112> direction InAs nanowires growing is proposed and demonstrated by the transmission electron microscopy measurement. The morphology of InAs nanowires is tapered in diameter and exhibits a hexagonal cross-section. The defect-free InAs nanowire shows a pure zinc blende crystal structure and an epitaxial relationship with InP buffer layer.

  12. Enhanced Lifetime of Polymer Solar Cells by Surface Passivation of Metal Oxide Buffer Layers.

    PubMed

    Venkatesan, Swaminathan; Ngo, Evan; Khatiwada, Devendra; Zhang, Cheng; Qiao, Qiquan

    2015-07-29

    The role of electron selective interfaces on the performance and lifetime of polymer solar cells were compared and analyzed. Bilayer interfaces consisting of metal oxide films with cationic polymer modification namely poly ethylenimine ethoxylated (PEIE) were found to enhance device lifetime compared to bare metal oxide films when used as an electron selective cathode interface. Devices utilizing surface-modified metal oxide layers showed enhanced lifetimes, retaining up to 85% of their original efficiency when stored in ambient atmosphere for 180 days without any encapsulation. The work function and surface potential of zinc oxide (ZnO) and ZnO/PEIE interlayers were evaluated using Kelvin probe and Kelvin probe force microscopy (KPFM) respectively. Kelvin probe measurements showed a smaller reduction in work function of ZnO/PEIE films compared to bare ZnO films when aged in atmospheric conditions. KPFM measurements showed that the surface potential of the ZnO surface drastically reduces when stored in ambient air for 7 days because of surface oxidation. Surface oxidation of the interface led to a substantial decrease in the performance in aged devices. The enhancement in the lifetime of devices with a bilayer interface was correlated to the suppressed surface oxidation of the metal oxide layers. The PEIE passivated surface retained a lower Fermi level when aged, which led to lower trap-assisted recombination at the polymer-cathode interface. Further photocharge extraction by linearly increasing voltage (Photo-CELIV) measurements were performed on fresh and aged samples to evaluate the field required to extract maximum charges. Fresh devices with a bare ZnO cathode interlayer required a lower field than devices with ZnO/PEIE cathode interface. However, aged devices with ZnO required a much higher field to extract charges while aged devices with ZnO/PEIE showed a minor increase compared to the fresh devices. Results indicate that surface modification can act as a

  13. Radiation damage resistance of AlGaN detectors for applications in the extreme-ultraviolet spectral range

    SciTech Connect

    Barkusky, Frank; Peth, Christian; Bayer, Armin; Mann, Klaus; John, Joachim; Malinowski, Pawel E.

    2009-09-15

    We report on the fabrication of aluminum gallium nitride (AlGaN) Schottky-photodiode-based detectors. AlGaN layers were grown using metal-organic chemical vapor deposition (MOCVD) on Si(111) wafers. The diodes were characterized at a wavelength of 13.5 nm using a table-top extreme-ultraviolet (EUV) radiation source, consisting of a laser-produced xenon plasma and a Schwarzschild objective. The responsivity of the diodes was tested between EUV energies ranging from 320 nJ down to several picojoules. For low fluences, a linear responsivity of 7.14 mAs/J could be determined. Saturation starts at approximately 1 nJ, merging into a linear response of 0.113 mAs/J, which could be attributed to the photoeffect on the Au electrodes on top of the diode. Furthermore, degradation tests were performed up to an absolute dose of 3.3x10{sup 19} photons/cm{sup 2}. AlGaN photodiodes were compared to commercially available silicon-based photodetectors. For AlGaN diodes, responsivity does not change even for the highest EUV dose, whereas the response of the Si diode decreases linearly to {approx}93% after 2x10{sup 19} photons/cm{sup 2}.

  14. High current density and high PVCR Si/Si 1-xGe x DQW RTD formed with quadruple-layer buffer

    NASA Astrophysics Data System (ADS)

    Maekawa, Hirotaka; Sano, Yoshihiro; Ueno, Chihiro; Suda, Yoshiyuki

    2007-04-01

    As a strain-relief relaxed Si 1-xGe x buffer that is used for type II band offset formation, we have proposed a quadruple-Si 1-xGe x-layer (QL) buffer where misfit dislocations are evenly distributed in the lower two interfaces and a buffer surface with good crystallinity was obtained. The crystallinity of the buffer surface does not degrade by high P doping with a P concentration of ˜10 19 cm -3 during the buffer growth. A vertical-type electron-tunneling Si/Si 1-xGe x resonant tunneling diode (RTD) formed with the highly P-doped QL buffer exhibits a high current density and a high peak-to-valley current ratio (PVCR) value. A planer-type electron-tunneling Si/ Si 1-xGe x RTD formed with the same buffer using tetramethyl ammonium hydroxide (TMAH) etching and polyimide insulator, which is better suited for device integration, also exhibits a high current density and a high PVCR value and good initial static performance reproducibility.

  15. Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter

    SciTech Connect

    Däubler, J. Passow, T.; Aidam, R.; Köhler, K.; Kirste, L.; Kunzer, M.; Wagner, J.

    2014-09-15

    Metamorphic (i.e., linear composition graded) GaInN buffer layers with an increased in-plane lattice parameter, grown by plasma-assisted molecular beam epitaxy, were used as templates for metal organic vapor phase epitaxy (MOVPE) grown GaInN/GaInN quantum wells (QWs), emitting in the green to red spectral region. A composition pulling effect was observed allowing considerable higher growth temperatures for the QWs for a given In composition. The internal quantum efficiency (IQE) of the QWs was determined by temperature and excitation power density dependent photoluminescence (PL) spectroscopy. An increase in IQE by a factor of two was found for green emitting QWs grown on metamorphic GaInN buffer compared to reference samples grown on standard GaN buffer layers. The ratio of room temperature to low temperature intensity PL of the red emitting QWs were found to be comparable to the PL efficiency of green emitting QWs, both grown on metamorphic GaInN buffers. The excitation density and well width dependence of the IQE indicate a reduction of the quantum confined Stark effect upon growth on GaInN buffer layers with increased in-plane lattice parameter.

  16. EXAMINATION OF DISLOCATIONS IN LATTICE-MISMATCHED GaInAs/BUFFER LAYER/GaAs FOR III-V PHOTOVOLTAICS

    SciTech Connect

    Levander, A.; Geisz, J.

    2007-01-01

    Dislocations act as sites for nonradiative electron/hole pair recombination, which reduces the effi ciency of photovoltaics. Lattice-matched materials can be grown on top of one another without forming a high density of dislocations. However, when the growth of lattice-mismatched (LMM) materials is attempted, many dislocations result from the relaxation of strain in the crystal structure. In an attempt to reduce the number of dislocations that propagate into a solar device when using LMM materials, a compositionally step-graded buffer is placed between the two LMM materials. In order to confi ne the dislocations to the buffer layer and therefore increase material quality and device effi ciency, the growth temperature and thickness of the buffer layer were varied. A GaInP compositionally graded buffer and GaInAs p-n junction were grown on a GaAs substrate in a metal-organic chemical vapor deposition (MOCVD) system. A multibeam optical stress sensor (MOSS) and X-ray diffraction (XRD) were used to characterize the strain in the epilayers. Electrical and optoelectronic properties were measured using a probe station and multimeter setup, solar simulator, and a quantum effi ciency instrument. It was determined that device functionality was highly dependent on the growth temperature of the graded buffer. As growth temperature increased, so did the dislocation density in the device despite an increase in the dislocation velocity, which should have increased the dislocation annihilation rate and the diffusion of dislocations to the edge of the crystal. The thickness of the graded buffer also affected device effi ciency with thinner samples performing poorly. The thinner graded buffer layers had high internal resistances from reduced carrier concentrations. In terms of effi ciency, the empirically derived recipe developed by the scientists at the National Renewable Energy Laboratory (NREL) produced the highest quality cells.

  17. Enhancement of the quality of InAsSb epilayers using InAsSb graded and InSb buffer layers grown by hot wall epitaxy

    NASA Astrophysics Data System (ADS)

    Nakamura, S.; Jayavel, P.; Kobayashi, Y.; Arafune, K.; Koyama, T.; Kumagawa, M.; Hayakawa, Y.

    2005-10-01

    We have investigated the structural and electrical properties of InAsxSb1-x epilayers grown on GaAs(0 0 1) substrates by hot wall epitaxy. The epilayers were grown on an InAsSb graded layer and an InSb buffer layer. The arsenic composition (x) of the InAsxSb1-x epilayer was calculated using x-ray diffraction and found to be 0.5. The graded layers were grown with As temperature gradients of 2 and 0.5 °C min-1. The three-dimensional (3D) island growth due to the large lattice mismatch between InAsSb and GaAs was observed by scanning electron microscopy. As the thicknesses of the InAsSb graded layer and the InSb buffer layer are increased, a transition from 3D island growth to two-dimensional plateau-like growth is observed. The x-ray rocking curve measurements indicate that full-width at half-maximum values of the epilayers were decreased by using the graded and buffer layers. A dramatic enhancement of the electron mobility of the grown layers was observed by Hall effect measurements.

  18. Comparison of ZnO thin films grown on a polycrystalline 3C-SiC buffer layer by RF magnetron sputtering and a sol-gel method

    NASA Astrophysics Data System (ADS)

    Phan, Duy-Thach; Chung, Gwiy-Sang

    2011-02-01

    Zinc oxide (ZnO) thin films were deposited on a polycrystalline (poly) 3C-SiC buffer layer using RF magnetron sputtering and a sol-gel method. The post-deposition annealing was performed on ZnO thin films prepared using both methods. The formation of ZnO piezoelectric thin films with less residual stress was due to a close lattice mismatch of the ZnO and SiC layers as obtained by the sputtering method. Nanocrystalline, porous ZnO film prepared using the sol-gel method showed strong ultraviolet UV emission at a wavelength of 380 nm. The 3C-SiC buffer layer improved the optical and piezoelectric properties of the ZnO film produced by the two deposition methods. Moreover, the different structures of the ZnO films on the 3C-SiC intermediate layer caused by the different deposition techniques were also considered and discussed.

  19. Improvement of Performance and Stability of Polymer Photovoltaic Cells by WO3/CUPC as Anode Buffer Layers

    NASA Astrophysics Data System (ADS)

    Varnamkhasti, M. G.; Shahriaria, E.

    2015-05-01

    In this work, bulk-hetrojunction polymer photovoltaic cells based on poly-(3-hexylthiophene) (P3HT): [6,6]-phenyl C61 butyric acid methyl ester (PCBM) were fabricated with tungsten oxide (WO3) and copper phthalocyanine (CuPc) as anodic buffer layers. The WO3 plays an important role in reducing the interfacial resistance, efficiently extracting holes and good band structure matching between the work function of the anode and the highest occupied molecular orbital of the organic material. The insertion of CuPc improves the device In this work, bulk-hetrojunction polymer photovoltaic cells based on poly-(3-hexylthiophene) (P3HT): [6, 6]-phenyl C61 butyric acid methylester (PCBM) were fabricated with tungsten oxide (WO3) and copper phthalocyanine (CuPc) as anodic buffer layers. The WO3 plays animportant role in reducing the interfacial resistance, efficiently extracting holes and good band structure matching between the workfunction of the anode and the highest occupied molecular orbital of the organic material. The insertion of CuPc improves the device performance and expands the absorption spectra range of the photovoltaic devices. The effects of WO3 and CuPc thickness on the performance of the photovoltaic devices were investigated. The optimum thicknesses of WO3 and CuPc were 10 nm and 8 nm, respectively. The obtained power conversion efficiency of optimized cell was about 4.21%. Also, the device performance was analyzed based on thesurface roughness of bare ITO and ITO that was covered with poly (3, 4-ethylenedioxythiophene): poly (styrene sulfonate) (PEDOT:PSS) or WO3/CuPc. The device stability in an ambient atmosphere without encapsulation under continuous light irradiation was also investigated.For the cell with PEDOT:PSS, the power conversion efficiency reduced down to 50% of the maximum value (half-life) after light irradiation for 12 h, while the half-life of device for WO3/CuPc was about 120 h. Therefore, the lifetime of unpackaged devices was improved with

  20. High-power SiC MESFET using a dual p-buffer layer for an S-band power amplifier

    NASA Astrophysics Data System (ADS)

    Deng, Xiao-Chuan; Sun, He; Rao, Cheng-Yuan; Zhang, Bo

    2013-01-01

    A silicon carbide (SiC) based metal semiconductor field effect transistor (MESFET) is fabricated by using a standard SiC MESFET structure with the application of a dual p-buffer layer and a multi-recessed gate to the process for an S-band power amplifier. The lower doped upper-buffer layer serves to maintain the channel current, while the higher doped lower-buffer layer is used to provide excellent electron confinement in the channel layer. A 20-mm gate periphery SiC MESFET biased at a drain voltage of 85 V demonstrates a pulsed wave saturated output power of 94 W, a linear gain of 11.7 dB, and a maximum power added efficiency of 24.3% at 3.4 GHz. These results are improved compared with those of the conventional single p-buffer MESFET fabricated in this work using the same process. A radio-frequency power output greater than 4.7 W/mm is achieved, showing the potential as a high-voltage operation device for high-power solid-state amplifier applications.

  1. Impact of CoFe buffer layers on the structural and electronic properties of the Co2MnSi/MgO interface

    NASA Astrophysics Data System (ADS)

    Fetzer, Roman; Liu, Hong-xi; Stadtmüller, Benjamin; Uemura, Tetsuya; Yamamoto, Masafumi; Aeschlimann, Martin; Cinchetti, Mirko

    2016-05-01

    The latest improvement of MgO-based magnetic tunnel junctions has been achieved by the combination of CoFe buffer layers and potentially half-metallic ultrathin Co2MnSi electrodes. By this, tunnel magnetoresistance ratios of almost 2000% could be obtained. However, a complete understanding of the underlying processes leading to this enhancement is not yet given. We present a comprehensive study regarding the structural and electronic spin properties of the CoFe(30 nm)-buffered Co2MnSi(3 nm)/MgO(2 nm) buried interface identical to the one formed in actual devices. Low energy electron diffraction experiments show that the ultrathin Co2MnSi layer adopts the lattice constant of the underlying CoFe buffer layer, leading to improved structural conditions at the interface to MgO. In contrast, the Co2MnSi/MgO interface spin polarization at the Fermi level is not affected by the magnetic CoFe buffer layer, as found by interface-sensitive spin-resolved extremely low energy photoemission spectroscopy.

  2. Power Conversion Efficiency and Device Stability Improvement of Inverted Perovskite Solar Cells by Using a ZnO:PFN Composite Cathode Buffer Layer.

    PubMed

    Jia, Xiaorui; Zhang, Lianping; Luo, Qun; Lu, Hui; Li, Xueyuan; Xie, Zhongzhi; Yang, Yongzhen; Li, Yan-Qing; Liu, Xuguang; Ma, Chang-Qi

    2016-07-20

    We have demonstrated in this article that both power conversion efficiency (PCE) and performance stability of inverted planar heterojunction perovskite solar cells can be improved by using a ZnO:PFN nanocomposite (PFN: poly[(9,9-bis(3'-(N,N-dimethylamion)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctyl)-fluorene]) as the cathode buffer layer (CBL). This nanocomposite could form a compact and defect-less CBL film on the perovskite/PC61BM surface (PC61BM: phenyl-C61-butyric acid methyl ester). In addition, the high conductivity of the nanocomposite layer makes it works well at a layer thickness of 150 nm. Both advantages of the composite layer are helpful in reducing interface charge recombination and improving device performance. The power conversion efficiency (PCE) of the best ZnO:PFN CBL based device was measured to be 12.76%, which is higher than that of device without CBL (9.00%), or device with ZnO (7.93%) or PFN (11.30%) as the cathode buffer layer. In addition, the long-term stability is improved by using ZnO:PFN composite cathode buffer layer when compare to that of the reference cells. Almost no degradation of open circuit voltage (VOC) and fill factor (FF) was found for the device having ZnO:PFN, suggesting that ZnO:PFN is able to stabilize the interface property and consequently improve the solar cell performance stability.

  3. Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers.

    PubMed

    Zhao, Guijuan; Wang, Lianshan; Yang, Shaoyan; Li, Huijie; Wei, Hongyuan; Han, Dongyue; Wang, Zhanguo

    2016-02-10

    We report the anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using a three-step growth method which consisted of a low temperature AlN buffer layer, followed by a high temperature AlN buffer layer and GaN growth. By introducing double AlN buffer layers, we substantially improve the crystal and optical qualities of semi-polar (11-22) GaN, and significantly reduce the density of stacking faults and dislocations. The high resolution x-ray diffraction measurement revealed that the in-plane anisotropic structural characteristics of GaN layer are azimuthal dependent. Transmission electron microscopy analysis showed that the majority of dislocations in the GaN epitaxial layer grown on m-sapphire are the mixed-type and the orientation of GaN layer was rotated 58.4° against the substrate. The room temperature photoluminescence (PL) spectra showed the PL intensity and wavelength have polarization dependence along parallel and perpendicular to the [1-100] axis (polarization degrees ~ 0.63). The realization of a high polarization semi-polar GaN would be useful to achieve III-nitride based lighting emission device for displays and backlighting.

  4. Anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using double AlN buffer layers

    PubMed Central

    Zhao, Guijuan; Wang, Lianshan; Yang, Shaoyan; Li, Huijie; Wei, Hongyuan; Han, Dongyue; Wang, Zhanguo

    2016-01-01

    We report the anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using a three-step growth method which consisted of a low temperature AlN buffer layer, followed by a high temperature AlN buffer layer and GaN growth. By introducing double AlN buffer layers, we substantially improve the crystal and optical qualities of semi-polar (11–22) GaN, and significantly reduce the density of stacking faults and dislocations. The high resolution x-ray diffraction measurement revealed that the in-plane anisotropic structural characteristics of GaN layer are azimuthal dependent. Transmission electron microscopy analysis showed that the majority of dislocations in the GaN epitaxial layer grown on m-sapphire are the mixed-type and the orientation of GaN layer was rotated 58.4° against the substrate. The room temperature photoluminescence (PL) spectra showed the PL intensity and wavelength have polarization dependence along parallel and perpendicular to the [1–100] axis (polarization degrees ~ 0.63). The realization of a high polarization semi-polar GaN would be useful to achieve III-nitride based lighting emission device for displays and backlighting. PMID:26861595

  5. Magnetic properties of nano-patterned GaMnAs films grown on ZnCdSe buffer layers

    NASA Astrophysics Data System (ADS)

    Dong, Sining; Li, Xiang; Kanzyuba, Vasily; Yoo, Taehee; Liu, Xinyu; Dobrowolska, Malgorzata; Furdyna, Jacek

    Magnetic semiconductor nanostructures are attracting intense attention, both because of their fundamental physical properties, and because of the promise which they hold for building smaller, faster and more energy-efficient devices. In this study we report successful MBE growth of GaMnAs films on the GaAs (100) substrates with ZnCdSe buffer layers, which results in perpendicular magnetic easy axis in the GaMnAs films. The GaMnAs/ZnCdSe films have been etched into nano-stripe shapes with various widths below 200nm by e-beam lithography, which resulted in a new geometry of interest for perpendicular magnetic recording. Magnetic anisotropy of as-grown GaMnAs films and nano-stripes was then studied by SQUID magnetometry. The results indicate that the GaMnAs films consist of magnetic domains with magnetization normal to the film plane, having rather high coercivety, which survives after nanofabrication. This is also confirmed by the dynamics of the domain motion as shown by AC susceptibility measurements. These findings are of interest for understanding the magnetic anisotropy mechanisms in GaMnAs and its domain structures, as well as for designing of nano-sized spintronic devices which require hard ferromagnetic behavior with perpendicular easy axes. This work was supported by the National Science Foundation Grant DMR1400432.

  6. Characterization of Zn(O,S) Buffer Layers for Cu(In,Ga)Se2 Solar Cells.

    PubMed

    Choi, Ji Hyun; Jung, Sung Hee; Chung, Chee Won

    2016-05-01

    Zn(O,S) thin films were deposited using a ZnS target under Ar/O2 gases by radio-frequency magnetron sputtering. As the O2 concentration increased, the deposition rates of the Zn(O,S) films decreased due to increase of O-. The crystalline structure of Zn(O,S) was maintained at up to 0.6% O2, while the films became unstable at the condition exceeding 0.8% O2. This was attributed to incomplete nucleation and film growth on the substrate at the room temperature. Additionally, optical emission spectroscopy analysis indicated that an increased O- intensity at high O2 concentration was responsible for the slow deposition rate and increased oxygen concentration of the films. X-ray diffraction and scanning electron microscopy revealed the formation of a Zn(O,S) crystal structure with partial substitution of O for S and uniform and dense grains of the films. X-ray photoelectron spectroscopy showed that the Zn(O,S) films have a uniform composition of each element and consisted of a mixed crystal structure of Zn(O,S) with Zn-O bonding. Overall, the results of this study confirmed that Zn(O,S) films deposited by radio-frequency sputtering using Ar/O2 gas at room temperature can be applied to Cu(In,Ga)Se2 solar cells as a buffer layer. PMID:27483934

  7. Theoretical and experimental study of highly textured GaAs on silicon using a graphene buffer layer

    NASA Astrophysics Data System (ADS)

    Alaskar, Yazeed; Arafin, Shamsul; Lin, Qiyin; Wickramaratne, Darshana; McKay, Jeff; Norman, Andrew G.; Zhang, Zhi; Yao, Luchi; Ding, Feng; Zou, Jin; Goorsky, Mark S.; Lake, Roger K.; Zurbuchen, Mark A.; Wang, Kang L.

    2015-09-01

    A novel heteroepitaxial growth technique, quasi-van der Waals epitaxy, promises the ability to deposit three-dimensional GaAs materials on silicon using two-dimensional graphene as a buffer layer by overcoming the lattice and thermal expansion mismatch. In this study, density functional theory (DFT) simulations were performed to understand the interactions at the GaAs/graphene hetero-interface as well as the growth orientations of GaAs on graphene. To develop a better understanding of the molecular beam epitaxy-grown GaAs films on graphene, samples were characterized by x-ray diffraction (θ-2θ scan, ω-scan, grazing incidence XRD and pole figure measurement) and transmission electron microscopy. The realizations of smooth GaAs films with a strong (111) oriented fiber-texture on graphene/silicon using this deposition technique are a milestone towards an eventual demonstration of the epitaxial growth of GaAs on silicon, which is necessary for integrated photonics application.

  8. Fe 3O 4 films grown by laser ablation on mica with and without MgO buffer layers

    NASA Astrophysics Data System (ADS)

    Kennedy, R. J.; Stampe, P. A.

    1999-05-01

    Fe 3O 4 and MgO films have been grown on (0 0 1) mica substrates by ablation of an Fe or Mg metal target in an oxygen atmosphere using the fundamental frequency of a Nd : YAG laser. X-ray measurements show that the MgO films are epitaxial and (1 1 1) oriented. The Fe 3O 4 films grown on bare mica substrates are (1 1 1) oriented and random in plane. The introduction of an MgO buffer layer between the mica and the Fe 3O 4 films results in epitaxial (1 1 1) growth of Fe 3O 4. Room temperature high-field magnetization measurements of the random in plane Fe 3O 4/mica films are the same as for the epitaxial Fe 3O 4/MgO/mica films. The out of plane coercivities are almost twice as large as the in-plane coercivities, in contrast to ferrite films grown on Si and GaAs for which Hc|| ˜ Hc⊥ .

  9. Laser Imprint Reduction Using a Low-Density Foam Buffer as a Thermal Smoothing Layer at 351-nm Wavelength

    NASA Astrophysics Data System (ADS)

    Watt, R. G.; Duke, J.; Fontes, C. J.; Gobby, P. L.; Hollis, R. V.; Kopp, R. A.; Mason, R. J.; Wilson, D. C.; Verdon, C. P.; Boehly, T. R.; Knauer, J. P.; Meyerhofer, D. D.; Smalyuk, V.; Town, R. P.; Iwase, A.; Willi, O.

    1998-11-01

    Laser-nonuniformity-induced perturbation growth has been measured on planar foam-buffered plastic (CH) targets irradiated with 351-nm laser radiation. The maximum observed perturbation growth was reduced by about 50% by the foam buffer. Rayleigh-Taylor unstable growth of intentional mass modulations was minimally changed by the addition of the foam buffer. We conclude that the reduction of laser-induced perturbation growth is a result of a reduction in the perturbation seed amplitude rather than any changes in the growth rate in the solid due to preheating by radiation or shocks caused by the presence of the foam buffer.

  10. Characterization of ZrO2 buffer layers for sequentially evaporated Y-Ba-CuO on Si and Al2O3 substrates

    NASA Technical Reports Server (NTRS)

    Valco, George J.; Rohrer, Norman J.; Pouch, John J.; Warner, Joseph D.; Bhasin, Kul B.

    1988-01-01

    Thin film high temperature superconductors have the potential to change the microwave technology for space communications systems. For such applications it is desirable that the films be formed on substrates such as Al2O3 which have good microwave properties. The use of ZrO2 buffer layers between Y-Ba-Cu-O and the substrate has been investigated. These superconducting films have been formed by multilayer sequential electron beam evaporation of Cu, BaF2 and Y with subsequent annealing. The three layer sequence of Y/BaF2/Cu is repeated four times for a total of twelve layers. Such a multilayer film, approximately 1 micron thick, deposited directly on SrTiO3 and annealed at 900 C for 45 min produces a film with a superconducting onset of 93 K and critical temperature of 85 K. Auger electron spectroscopy in conjunction with argon ion sputtering was used to obtain the distribution of each element as a function of depth for an unannealed film, the annealed film on SrTiO3 and annealed films on ZrO2 buffer layers. The individual layers were apparent. After annealing, the bulk of the film on SrTiO3 is observed to be fairly uniform while films on the substrates with buffer layers are less uniform. The Y-Ba-Cu-O/ZrO2 interface is broad with a long Ba tail into the ZrO2, suggesting interaction between the film and the buffer layer. The underlying ZrO2/Si interface is sharper. The detailed Auger results are presented and compared with samples annealed at different temperatures and durations.

  11. Assembly of phosphonic acids on GaN and AlGaN

    NASA Astrophysics Data System (ADS)

    Simpkins, B. S.; Hong, S.; Stine, R.; Mäkinen, A. J.; Theodore, N. D.; Mastro, M. A.; Eddy, C. R., Jr.; Pehrsson, P. E.

    2010-01-01

    Self-assembled monolayers of octadecylphosphonic acid and 16-phosphonohexadecanoic acid (PHDA) were formed on the semiconductor substrates gallium nitride (GaN) and aluminium gallium nitride (AlGaN). The presence of the molecular layers was verified through x-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy. Structural information was acquired with infrared spectroscopy which verified the bonding orientation of the carboxyl-containing PHDA. The impact of the molecular layers on the channel conductivity and the surface electronic structure of an AlGaN/GaN heterostructure was measured. Our results indicate that pinning of the surface Fermi level prohibits modification of the channel conductivity by the layer. However, a surface dipole of ~0.8 eV is present and associated with both phosphonic acid layers. These results are of direct relevance to field-effect-based biochemical sensors and metal-semiconductor contact formation for this system and provide a fundamental basis for further applications of GaN and AlGaN technology in the fields of biosensing and microelectronics.

  12. Tuning the interfacial hole injection barrier between p-type organic materials and Co using a MoO{sub 3} buffer layer

    SciTech Connect

    Wang Yuzhan; Wee, Andrew T. S.; Cao Liang; Qi Dongchen; Chen Wei; Gao Xingyu

    2012-08-01

    We demonstrate that the interfacial hole injection barrier {Delta}{sub h} between p-type organic materials (i.e., CuPc and pentacene) and Co substrate can be tuned by the insertion of a MoO{sub 3} buffer layer. Using ultraviolet photoemission spectroscopy, it was found that the introduction of MoO{sub 3} buffer layer effectively reduces the hole injection barrier from 0.8 eV to 0.4 eV for the CuPc/Co interface, and from 1.0 eV to 0.4 eV for the pentacene/Co interface, respectively. In addition, by varying the thickness of the buffer, the tuning effect of {Delta}{sub h} is shown to be independent of the thickness of MoO{sub 3} interlayer at both CuPc/Co and pentacene/Co interfaces. This Fermi level pinning effect can be explained by the integer charge-transfer model. Therefore, the MoO{sub 3} buffer layer has the potential to be applied in p-type organic spin valve devices to improve the device performance via reducing the interfacial hole injection barrier.

  13. Growth of high-quality InN thin films on InGaN buffer layer by plasma-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Yang, Chen-Chi; Lo, Ikai; Shih, Cheng-Hung; Hu, Chia-Hsuan; Wang, Ying-Chieh; Lin, Yu-Chiao; Tasi, Cheng-Da; You, Shuo-Ting

    2015-03-01

    Four samples were grown on 2 inch c-plane (0001) sapphire substrates with 4 μm-thick GaN template. The InN thin films were grown on InGaN buffer layer by low-temperature plasma-assisted molecular beam epitaxy (PAMBE) system. These samples were grown under a varied temperature of InGaN buffer layers: 500°C, 540°C, 570°C, and 600°C. The structure properties of these samples were analyzed by X-ray diffraction (XRD). The interference fringes of InN grown on the sample 1 (the growth temperature of InGaN buffer layer at 500°C) exhibit prominent oscillations, which indicates that the sample has a high quality and layer by layer epitaxial structure. The surface morphology and microstructure of samples were investigated by scanning electron microscopy (SEM), atomic force microscopy (AFM), and transmission electron microscopy (TEM). We confirmed the smooth surface and high quality crystalline for the sample.

  14. Effects of Low-Oxygen-Content Metalorganic Precursors on AlInAs and High Electron Mobility Transistor Structures with the Thick AlInAs Buffer Layer

    NASA Astrophysics Data System (ADS)

    Tanaka, Tsuyoshi; Tokudome, Kohichi; Miyamoto, Yasuyuki

    2003-08-01

    We investigated the effects of low-oxygen-content metalorganic precursors on oxygen impurities and Hall mobility. The oxygen concentration in the AlInAs layer was less than 2× 1017 cm-3 under all growth conditions. We confirmed the high mobility of the AlInAs/InP high electron mobility transistors (HEMT) structure with the AlInAs buffer layer (5,500 cm2/V\\cdots at 300 K, and 110,000 cm2/V\\cdots at 77 K). For the AlInAs/GaInAs HEMT structure with the same buffer layer, we obtained the high mobility (12,000 cm2/V\\cdots at 300 K, and 92,000 cm2/V\\cdots at 77 K).

  15. Realization of high quality epitaxial current- perpendicular-to-plane giant magnetoresistive pseudo spin-valves on Si(001) wafer using NiAl buffer layer

    NASA Astrophysics Data System (ADS)

    Chen, Jiamin; Liu, J.; Sakuraba, Y.; Sukegawa, H.; Li, S.; Hono, K.

    2016-05-01

    In this letter, we report a NiAl buffer layer as a template for the integration of epitaxial current-perpendicular-plane-giant magnetoresistive (CPP-GMR) devices on a Si(001) single crystalline substrate. By depositing NiAl on a Si wafer at an elevated temperature of 500 °C, a smooth and epitaxial B2-type NiAl(001) layer was obtained. The surface roughness was further improved by depositing Ag on the NiAl layer and applying subsequent annealing process. The epitaxial CPP-GMR devices grown on the buffered Si(001) substrate present a large magnetoresistive output comparable with that of the devices grown on an MgO(001) substrate, demonstrating the possibility of epitaxial spintronic devices with a NiAl templated Si wafer for practical applications.

  16. Effects of misfit dislocations and AlN buffer layer on the GaInN/GaN phase diagram of the growth mode

    NASA Astrophysics Data System (ADS)

    Nakajima, Kazuo; Ujihara, Toru; Miyashita, Satoru; Sazaki, Gen

    2001-01-01

    The thickness-composition phase diagrams of the growth modes were determined for the GaInN-on-GaN (GaInN/GaN) and the GaInN-on-AlN-on-GaN (GaInN/AlN/GaN) structures. For this determination, the strain energy was calculated by considering the stress relaxation due to introduction of misfit dislocations, the surface energy was estimated from bonding enthalpy of the nearest-neighbor bonds on the surface, and the interface energy was estimated by considering both effects of the dangling bonds due to lattice misfit and the abrupt transition of bonding species at the heterointerface. From these phase diagrams, it was found that the layer-by-layer growth such as the Frank-van der Merwe mode was very difficult to obtain for the epitaxial growth of GaInN on GaN when the InN fraction is large. The Volmer-Weber mode is dominant in the phase diagram of the GaInN/GaN structures. The influence of an AlN buffer layer with a larger surface energy was studied by introducing an AlN layer between the GaInN layer and the GaN substrate. It was known that the layer-by-layer growth could be more easily obtained if misfit dislocations were introduced and an AlN layer was used as a buffer.

  17. Room temperature epitaxial growth of AlGaN on ZnO by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Kobayashi, Atsushi; Ohta, Jitsuo; Kawaguchi, Yuji; Fujioka, Hiroshi

    2006-09-01

    The authors have grown Al0.1Ga0.9N films on atomically flat ZnO substrates at room temperature (RT) by pulsed laser deposition. Epitaxial growth of AlGaN at RT proceeds in the layer-by-layer mode, and the films show atomically flat stepped and terraced surfaces. On the other hand, growth at 600°C proceeds three dimensionally, and the films suffer from degradation in their crystalline quality and from rough surface morphology. These results indicate that suppression of the formation of interfacial layers between AlGaN and ZnO by reducing the growth temperature is inherently important in order to take advantage of the nearly lattice-matched ZnO substrates. They have also found that high-quality AlGaN films can be obtained under highly N-rich conditions at reduced growth temperatures, which provides a striking contrast to the case of molecular beam epitaxy.

  18. Capping green emitting (Ga,In)N quantum wells with (Al,Ga)N: impact on structural and optical properties

    NASA Astrophysics Data System (ADS)

    Hussain, Sakhawat; Lekhal, Kaddour; Kim-Chauveau, Hyonju; Vennéguès, Philippe; De Mierry, Philippe; Damilano, Benjamin

    2014-03-01

    The difference of growth temperatures between InGaN quantum wells and GaN barriers has detrimental effects on the properties of the wells. Different capping processes of InGaN quantum well with a thin AlGaN layer have been investigated to prevent these effects. Both structural and optical properties of the samples, grown on c-plane sapphire substrates by metalorganic vapor phase epitaxy, were studied through transmission electron microscopy (TEM), x-ray diffraction and room temperature photoluminescence. The average quantum well thickness and its indium composition were determined by digital processing of lattice fringes in cross-sectional TEM images. From the analysis of the well thickness distribution, it is shown that AlGaN as a capping layer helps to compensate an unwanted undulation at the upper InGaN QW-barrier interface. Moreover, when deposited at the same temperature as InGaN, the AlGaN layer is effective in avoiding or reducing the evaporation and/or diffusion of indium from InGaN wells, which results in the thinning of the well. It therefore helps to extend the emission wavelength up to 540 nm with a reduced degradation of the room temperature photoluminescence efficiency.

  19. Pulsed laser deposition of hydroxyapatite thin films on Ti-5Al-2.5Fe substrates with and without buffer layers

    NASA Astrophysics Data System (ADS)

    Nelea, V.; Ristoscu, C.; Chiritescu, C.; Ghica, C.; Mihailescu, I. N.; Pelletier, H.; Mille, P.; Cornet, A.

    2000-12-01

    We present a method for processing hydroxyapatite (HA) thin films on Ti-5Al-2.5Fe substrates. The films were grown by pulsed laser deposition (PLD) in vacuum at room temperature, using a KrF∗ excimer laser. The amorphous as-deposited HA films were recrystallized in ambient air by a thermal treatment at 550°C. The best results have been obtained when inserting a buffer layer of ceramic materials (TiN, ZrO2 or Al2O3). The films were characterized by complementary techniques: grazing incidence X-ray diffraction (GIXRD), scanning electron microscopy (SEM), cross-section transmission electron microscopy (XTEM), SAED, energy dispersive X-ray spectroscopy (EDS) and nanoindentation. The samples with buffer interlayer preserve the stoichiometry are completely recrystallized and present better mechanical characteristics as compared with that without buffer interlayer.

  20. Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs.

    PubMed

    Shih, Huan-Yu; Shiojiri, Makoto; Chen, Ching-Hsiang; Yu, Sheng-Fu; Ko, Chung-Ting; Yang, Jer-Ren; Lin, Ray-Ming; Chen, Miin-Jang

    2015-09-02

    High threading dislocation (TD) density in GaN-based devices is a long unresolved problem because of the large lattice mismatch between GaN and the substrate, which causes a major obstacle for the further improvement of next-generation high-efficiency solid-state lighting and high-power electronics. Here, we report InGaN/GaN LEDs with ultralow TD density and improved efficiency on a sapphire substrate, on which a near strain-free GaN compliant buffer layer was grown by remote plasma atomic layer deposition. This "compliant" buffer layer is capable of relaxing strain due to the absorption of misfit dislocations in a region within ~10 nm from the interface, leading to a high-quality overlying GaN epilayer with an unusual TD density as low as 2.2 × 10(5) cm(-2). In addition, this GaN compliant buffer layer exhibits excellent uniformity up to a 6" wafer, revealing a promising means to realize large-area GaN hetero-epitaxy for efficient LEDs and high-power transistors.

  1. Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs

    PubMed Central

    Shih, Huan-Yu; Shiojiri, Makoto; Chen, Ching-Hsiang; Yu, Sheng-Fu; Ko, Chung-Ting; Yang, Jer-Ren; Lin, Ray-Ming; Chen, Miin-Jang

    2015-01-01

    High threading dislocation (TD) density in GaN-based devices is a long unresolved problem because of the large lattice mismatch between GaN and the substrate, which causes a major obstacle for the further improvement of next-generation high-efficiency solid-state lighting and high-power electronics. Here, we report InGaN/GaN LEDs with ultralow TD density and improved efficiency on a sapphire substrate, on which a near strain-free GaN compliant buffer layer was grown by remote plasma atomic layer deposition. This “compliant” buffer layer is capable of relaxing strain due to the absorption of misfit dislocations in a region within ~10 nm from the interface, leading to a high-quality overlying GaN epilayer with an unusual TD density as low as 2.2 × 105 cm−2. In addition, this GaN compliant buffer layer exhibits excellent uniformity up to a 6” wafer, revealing a promising means to realize large-area GaN hetero-epitaxy for efficient LEDs and high-power transistors. PMID:26329829

  2. Effect of Dual Cathode Buffer Layer on the Charge Carrier Dynamics of rrP3HT:PCBM Based Bulk Heterojunction Solar Cell.

    PubMed

    Singh, Ashish; Dey, Anamika; Das, Dipjyoti; Iyer, Parameswar Krishnan

    2016-05-01

    In bulk heterojunction (BHJ) solar cells, the buffer layer plays a vital role in enhancing the power conversion efficiency (PCE) by improving the charge carrier dynamics. A comprehensive understanding of the contacts is especially essential in order to optimize the performance of organic solar cells (OSCs). Although there are several fundamental reports on this subject, a proper correlation of the physical processes with experimental evidence at the photoactive layer and contact materials is essential. In this work, we incorporated three different additional buffer layers, namely, tris(8-hydroxyquinolinato) aluminum (Alq3), bathophenanthroline (BPhen) or bathocuproine (BCP) with LiF/Al as conventional cathode contact in both rrP3HT:PC61BM and rrP3HT:PC71BM blend BHJ solar cells and their corresponding photovoltaic performances were systematically correlated with their energy level diagram. The device with dual cathode buffer layer having ITO/PEDOT:PSS/blend polymer/BCP/LiF/Al configuration showed the best device performance with PCE, η = 4.96%, Jsc = 13.53 mA/cm(2), Voc = 0.60 V and FF= 61% for rrP3HT:PC71BM and PCE, η = 4.5% with Jsc = 13.3 mA/cm(2), Voc = 0.59 V and FF = 59% for rrP3HT:PC61BM. This drastic improvement in PCE in both the device configurations are due to the combined effects of better hole-blocking capacity of BCP and low work function provided by LiF/Al with the blend polymer. These results successfully explain the role of dual cathode buffer layers and their contribution to the PCE improvement and overall device performance with rrP3HT:PCBM based BHJ solar cell. PMID:27075007

  3. Identification of the Chemical Bonding Prompting Adhesion of a-C:H Thin Films on Ferrous Alloy Intermediated by a SiCx:H Buffer Layer.

    PubMed

    Cemin, F; Bim, L T; Leidens, L M; Morales, M; Baumvol, I J R; Alvarez, F; Figueroa, C A

    2015-07-29

    Amorphous carbon (a-C) and several related materials (DLCs) may have ultralow friction coefficients that can be used for saving-energy applications. However, poor chemical bonding of a-C/DLC films on metallic alloys is expected, due to the stability of carbon-carbon bonds. Silicon-based intermediate layers are employed to enhance the adherence of a-C:H films on ferrous alloys, although the role of such buffer layers is not yet fully understood in chemical terms. The chemical bonding of a-C:H thin films on ferrous alloy intermediated by a nanometric SiCx:H buffer layer was analyzed by X-ray photoelectron spectroscopy (XPS). The chemical profile was inspected by glow discharge optical emission spectroscopy (GDOES), and the chemical structure was evaluated by Raman and Fourier transform infrared spectroscopy techniques. The nature of adhesion is discussed by analyzing the chemical bonding at the interfaces of the a-C:H/SiCx:H/ferrous alloy sandwich structure. The adhesion phenomenon is ascribed to specifically chemical bonding character at the buffer layer. Whereas carbon-carbon (C-C) and carbon-silicon (C-Si) bonds are formed at the outermost interface, the innermost interface is constituted mainly by silicon-iron (Si-Fe) bonds. The oxygen presence degrades the adhesion up to totally delaminate the a-C:H thin films. The SiCx:H deposition temperature determines the type of chemical bonding and the amount of oxygen contained in the buffer layer.

  4. Effect of Dual Cathode Buffer Layer on the Charge Carrier Dynamics of rrP3HT:PCBM Based Bulk Heterojunction Solar Cell.

    PubMed

    Singh, Ashish; Dey, Anamika; Das, Dipjyoti; Iyer, Parameswar Krishnan

    2016-05-01

    In bulk heterojunction (BHJ) solar cells, the buffer layer plays a vital role in enhancing the power conversion efficiency (PCE) by improving the charge carrier dynamics. A comprehensive understanding of the contacts is especially essential in order to optimize the performance of organic solar cells (OSCs). Although there are several fundamental reports on this subject, a proper correlation of the physical processes with experimental evidence at the photoactive layer and contact materials is essential. In this work, we incorporated three different additional buffer layers, namely, tris(8-hydroxyquinolinato) aluminum (Alq3), bathophenanthroline (BPhen) or bathocuproine (BCP) with LiF/Al as conventional cathode contact in both rrP3HT:PC61BM and rrP3HT:PC71BM blend BHJ solar cells and their corresponding photovoltaic performances were systematically correlated with their energy level diagram. The device with dual cathode buffer layer having ITO/PEDOT:PSS/blend polymer/BCP/LiF/Al configuration showed the best device performance with PCE, η = 4.96%, Jsc = 13.53 mA/cm(2), Voc = 0.60 V and FF= 61% for rrP3HT:PC71BM and PCE, η = 4.5% with Jsc = 13.3 mA/cm(2), Voc = 0.59 V and FF = 59% for rrP3HT:PC61BM. This drastic improvement in PCE in both the device configurations are due to the combined effects of better hole-blocking capacity of BCP and low work function provided by LiF/Al with the blend polymer. These results successfully explain the role of dual cathode buffer layers and their contribution to the PCE improvement and overall device performance with rrP3HT:PCBM based BHJ solar cell.

  5. Improving efficiency by hybrid TiO(2) nanorods with 1,10-phenanthroline as a cathode buffer layer for inverted organic solar cells.

    PubMed

    Sun, Chunming; Wu, Yulei; Zhang, Wenjun; Jiang, Nianquan; Jiu, Tonggang; Fang, Junfeng

    2014-01-22

    We reported a significant improvement in the efficiency of organic solar cells by introducing hybrid TiO2:1,10-phenanthroline as a cathode buffer layer. The devices based on polymer thieno[3,4-b]thiophene/benzodithiophene:[6,6]-phenyl C71-butyric acid methyl ester (PTB7:PC71BM) with hybrid buffer layer exhibited an average power conversion efficiency (PCE) as high as 8.02%, accounting for 20.8% enhancement compared with the TiO2 based devices. The cathode modification function of this hybrid material could also be extended to the poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PC61BM) system. We anticipate that this study will stimulate further research on hybrid materials to achieve more efficient charge collection and device performance.

  6. Epitaxial growth and thermal dynamics of CeO II buffer layer on textured Ni-W substrates for YBCO coated conductors

    NASA Astrophysics Data System (ADS)

    Pan, C. Y.; Cai, C. B.; Ying, L. L.; Lu, Y. M.; Liu, Z. Y.; Gao, B.; Liu, J. L.

    2008-02-01

    In present study, the biaxially textured CeO II buffer layers on Ni-W substrates have been prepared by chemical solution deposition (CSD) with cerium acetate as the starting precursor, mixed with solvents of Propionic acid, Isopropanol and Acetylacetone. Typical XRD θ-2θ scans and the pole figure display well out-of-plane and in-plane textures of CeO II films. SEM and AFM results suggest that the buffer layer have uniform and smooth surface. Meanwhile, the effects of heating rate on CeO II formation starting from the precursor solution have been studied using differential thermal analysis (DTA). And the further analysis is given by XRD results for precursor xrogel at the corresponding temperature. Detailed high temperature optical microscope (HTOM) photographs investigate the surface characteristics evolved with temperature.

  7. Optical, structural, and chemical properties of flash evaporated In{sub 2}S{sub 3} buffer layer for Cu(In,Ga)Se{sub 2} solar cells

    SciTech Connect

    Verma, Rajneesh; Chirila, Adrian; Guettler, Dominik; Perrenoud, Julian; Pianezzi, Fabian; Tiwari, Ayodhya N.; Datta, Debjit; Kumar, Satyendra; Mueller, Ulrich

    2010-10-15

    In{sub 2}S{sub 3} layers were deposited by flash evaporation technique with varying flash rates. The optical constants of layers based on Tauc-Lorentz model dielectric function were extracted from spectroscopic ellipsometry measurements. X-ray photoelectron spectroscopic investigation revealed the presence of oxygen impurity in as-deposited and air-annealed layers with traces of Na inclusion in the layer grown at high flash rate. The enhancement in crystalline arrangement of as-deposited layer after air annealing was confirmed by Raman spectroscopy. Rutherford backscattering measurements revealed the growth of off-stoichiometric layers at all flash rates. An analytical layer growth model has been proposed supporting the results obtained by various layer characterization techniques. The solar cells were prepared with flash evaporated In{sub 2}S{sub 3} buffer layers and their performances were compared with CdS reference solar cell. A significant gain in short-circuit current was obtained after air annealing of the complete device at 200 deg. C for 20 min. A maximum conversion efficiency of 12.6% was delivered by a high flash rate In{sub 2}S{sub 3} buffered cell with open-circuit voltage close to that of CdS reference cell. The improvement in device performance after air annealing treatment is explained by thermally enhanced Cu and oxygen diffusion from Cu(In,Ga)Se{sub 2} and i-ZnO to In{sub 2}S{sub 3} layer, respectively.

  8. Rapid deposition of biaxially-textured CeO 2 buffer layers on polycrystalline nickel alloy for superconducting tapes by ion assisted pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Xiong, Xuming; Winkler, Dag

    2000-07-01

    The long deposition time of sharply textured buffer layer was the main obstacle for the ion beam assisted deposition (IBAD) process to go to large scale fabrication of superconducting tapes. This paper shows that this obstacle can be overcome. (002)-oriented, sharply-textured CeO 2 buffer layers with (111) phi-scan full width of half maximum (FWHM) of 10° were deposited by ion beam assisted pulsed laser deposition (PLD) on polycrystalline Hastelloy C in 10 min. The deposition rate was about 3 nm/s. CeO 2 film surface was smooth and free of cracks compared with film by inclined substrate deposition (ISD). The IBAD was carried out at small ion-to-atom ratio values, which resulted in CeO 2 (200) plane aligned along the incident plane of the ion beam. The Jc of Y 1Ba 2Cu 3O 7- δ (YBCO) film deposited on the buffer layer was 7.3×10 5 A/cm 2.

  9. Non-Stoichiometric Amorphous Indium Selenide Thin Films as a Buffer Layer for CIGS Solar Cells with Various Temperatures in Rapid Thermal Annealing.

    PubMed

    Yoo, Myoung Han; Kim, Nam-Hoon

    2016-05-01

    The conventional structure of most of copper indium gallium diselenide (Culn(1-x)Ga(x)Se2, CIGS) solar cells includes a CdS thin film as a buffer layer. Cd-free buffer layers have attracted great interest for use in photovoltaic applications to avoid the use of hazardous and toxic materials. The RF magnetron sputtering method was used with an InSe2 compound target to prepare the indium selenide precursor. Rapid thermal annealing (RTA) was conducted in ambient N2 gas to control the concentration of volatile Se from the precursor with a change in temperature. The nature of the RTA-treated indium selenide thin films remained amorphous under annealing temperatures of ≤ 700 degrees C. The Se concentration of the RTA-treated specimens demonstrated an opposite trend to the annealing temperature. The optical transmittance and band gap energies were 75.33% and 2.451-3.085 eV, respectively, and thus were suitable for the buffer layer. As the annealing temperature increased, the resistivity decreased by an order-of-magnitude from 10(4) to 10(1) Ω-cm. At lower Se concentrations, the conductivity abruptly changed from p-type to n-type without crystallite formation in the amorphous phase, with the carrier concentration in the order of 10(17) cm(-3). PMID:27483873

  10. Power Conversion Efficiency and Device Stability Improvement of Inverted Perovskite Solar Cells by Using a ZnO:PFN Composite Cathode Buffer Layer.

    PubMed

    Jia, Xiaorui; Zhang, Lianping; Luo, Qun; Lu, Hui; Li, Xueyuan; Xie, Zhongzhi; Yang, Yongzhen; Li, Yan-Qing; Liu, Xuguang; Ma, Chang-Qi

    2016-07-20

    We have demonstrated in this article that both power conversion efficiency (PCE) and performance stability of inverted planar heterojunction perovskite solar cells can be improved by using a ZnO:PFN nanocomposite (PFN: poly[(9,9-bis(3'-(N,N-dimethylamion)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctyl)-fluorene]) as the cathode buffer layer (CBL). This nanocomposite could form a compact and defect-less CBL film on the perovskite/PC61BM surface (PC61BM: phenyl-C61-butyric acid methyl ester). In addition, the high conductivity of the nanocomposite layer makes it works well at a layer thickness of 150 nm. Both advantages of the composite layer are helpful in reducing interface charge recombination and improving device performance. The power conversion efficiency (PCE) of the best ZnO:PFN CBL based device was measured to be 12.76%, which is higher than that of device without CBL (9.00%), or device with ZnO (7.93%) or PFN (11.30%) as the cathode buffer layer. In addition, the long-term stability is improved by using ZnO:PFN composite cathode buffer layer when compare to that of the reference cells. Almost no degradation of open circuit voltage (VOC) and fill factor (FF) was found for the device having ZnO:PFN, suggesting that ZnO:PFN is able to stabilize the interface property and consequently improve the solar cell performance stability. PMID:27349330

  11. Tunable work function of a WO{sub x} buffer layer for enhanced photocarrier collection of pin-type amorphous silicon solar cells

    SciTech Connect

    Fang Liang; Baik, Seung Jae; Kang, Sang Jung; Seo, Jung Won; Jeon, Jin-Wan; Lim, Koeng Su; Kim, Jeong Won; Kim, Yoon Hak

    2011-05-15

    An in situ postdeposition ultraviolet treatment was proposed to improve the electrical properties of a tungsten oxide (WO{sub x}) buffer layer of pin-type amorphous silicon-based solar cell. Based on the x-ray and ultraviolet photoelectron spectroscopy and the activation energy measurements, it was found that the work function of WO{sub x} is tunable by ultraviolet light treatment, and the collection performance of solar cells incorporating WO{sub x} with the lower work function is further improved. Moreover, the optimal band alignment scheme for a window layer is discussed in terms of obtaining enhanced carrier collection without open circuit voltage degradation.

  12. A CdSe thin film: a versatile buffer layer for improving the performance of TiO2 nanorod array:PbS quantum dot solar cells

    NASA Astrophysics Data System (ADS)

    Tan, Furui; Wang, Zhijie; Qu, Shengchun; Cao, Dawei; Liu, Kong; Jiang, Qiwei; Yang, Ying; Pang, Shan; Zhang, Weifeng; Lei, Yong; Wang, Zhanguo

    2016-05-01

    To fully utilize the multiple exciton generation effects in quantum dots and improve the overall efficiency of the corresponding photovoltaic devices, nanostructuralizing the electron conducting layer turns out to be a feasible strategy. Herein, PbS quantum dot solar cells were fabricated on the basis of morphologically optimized TiO2 nanorod arrays. By inserting a thin layer of CdSe quantum dots into the interface of TiO2 and PbS, a dramatic enhancement in the power conversion efficiency from 4.2% to 5.2% was realized and the resulting efficiency is one of the highest values for quantum dot solar cells based on nanostructuralized buffer layers. The constructed double heterojunction with a cascade type-II energy level alignment is beneficial for promoting photogenerated charge separation and reducing charge recombination, thereby responsible for the performance improvement, as revealed by steady-state analyses as well as ultra-fast photoluminescence and photovoltage decays. Thus this paper provides a good buffer layer to the community of quantum dot solar cells.To fully utilize the multiple exciton generation effects in quantum dots and improve the overall efficiency of the corresponding photovoltaic devices, nanostructuralizing the electron conducting layer turns out to be a feasible strategy. Herein, PbS quantum dot solar cells were fabricated on the basis of morphologically optimized TiO2 nanorod arrays. By inserting a thin layer of CdSe quantum dots into the interface of TiO2 and PbS, a dramatic enhancement in the power conversion efficiency from 4.2% to 5.2% was realized and the resulting efficiency is one of the highest values for quantum dot solar cells based on nanostructuralized buffer layers. The constructed double heterojunction with a cascade type-II energy level alignment is beneficial for promoting photogenerated charge separation and reducing charge recombination, thereby responsible for the performance improvement, as revealed by steady

  13. Control of stress and threading dislocation density in the thick GaN/AlN buffer layers grown on Si (111) substrates by low- temperature MBE

    NASA Astrophysics Data System (ADS)

    Zolotukhin, D.; Nechaev, D.; Kuznetsova, N.; Ratnikov, V.; Rouvimov, S.; Jmerik, V.; Ivanov, S.

    2016-08-01

    We report on successful growth by plasma-assisted molecular beam epitaxy on a Si(111) substrate crack-free GaN/AlN buffer layers with a thickness more than 1 μm. The layers fabricated at relatively low growth temperature of 780°C have at room temperature the residual compressive stress of -97 MPa. Intrinsic stress evolution during the GaN growth was monitored in situ with a multi-beam optical system. Strong dependence of a stress relaxation ratio in the growing layer vs growth temperature was observed. The best-quality crack-free layers with TDs density of ∼⃒109 cm-2 and roughly zero bowing were obtained in the sample with sharp 2D-GaN/2D-AlN interface.

  14. Control of metamorphic buffer structure and device performance of In(x)Ga(1-x)As epitaxial layers fabricated by metal organic chemical vapor deposition.

    PubMed

    Nguyen, H Q; Yu, H W; Luc, Q H; Tang, Y Z; Phan, V T H; Hsu, C H; Chang, E Y; Tseng, Y C

    2014-12-01

    Using a step-graded (SG) buffer structure via metal-organic chemical vapor deposition, we demonstrate a high suitability of In0.5Ga0.5As epitaxial layers on a GaAs substrate for electronic device application. Taking advantage of the technique's precise control, we were able to increase the number of SG layers to achieve a fairly low dislocation density (∼10(6) cm(-2)), while keeping each individual SG layer slightly exceeding the critical thickness (∼80 nm) for strain relaxation. This met the demanded but contradictory requirements, and even offered excellent scalability by lowering the whole buffer structure down to 2.3 μm. This scalability overwhelmingly excels the forefront studies. The effects of the SG misfit strain on the crystal quality and surface morphology of In0.5Ga0.5As epitaxial layers were carefully investigated, and were correlated to threading dislocation (TD) blocking mechanisms. From microstructural analyses, TDs can be blocked effectively through self-annihilation reactions, or hindered randomly by misfit dislocation mechanisms. Growth conditions for avoiding phase separation were also explored and identified. The buffer-improved, high-quality In0.5Ga0.5As epitaxial layers enabled a high-performance, metal-oxide-semiconductor capacitor on a GaAs substrate. The devices displayed remarkable capacitance-voltage responses with small frequency dispersion. A promising interface trap density of 3 × 10(12) eV(-1) cm(-2) in a conductance test was also obtained. These electrical performances are competitive to those using lattice-coherent but pricey InGaAs/InP systems.

  15. Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells

    SciTech Connect

    Li, Xiaohang E-mail: dupuis@gatech.edu; Xie, Hongen; Ponce, Fernando A.; Ryou, Jae-Hyun; Detchprohm, Theeradetch; Dupuis, Russell D. E-mail: dupuis@gatech.edu

    2015-12-14

    We demonstrated onset of deep-ultraviolet (DUV) surface stimulated emission (SE) from c-plane AlGaN multiple-quantum well (MQW) heterostructures grown on a sapphire substrate by optical pumping at room temperature. The onset of SE became observable at a pumping power density of 630 kW/cm{sup 2}. Spectral deconvolution revealed superposition of a linearly amplified spontaneous emission peak at λ ∼ 257.0 nm with a full width at half maximum (FWHM) of ∼12 nm and a superlinearly amplified SE peak at λ ∼ 260 nm with a narrow FWHM of less than 2 nm. In particular, the wavelength of ∼260 nm is the shortest wavelength of surface SE from III-nitride MQW heterostructures to date. Atomic force microscopy and scanning transmission electron microscopy measurements were employed to investigate the material and structural quality of the AlGaN heterostructures, showing smooth surface and sharp layer interfaces. This study offers promising results for AlGaN heterostructures grown on sapphire substrates for the development of DUV vertical cavity surface emitting lasers (VCSELs)

  16. Ambipolar organic heterojunction transistors based on F16CuPc/CuPc with a MoO3 buffer layer

    NASA Astrophysics Data System (ADS)

    Mingdong, Yi; Ning, Zhang; Linghai, Xie; Wei, Huang

    2015-10-01

    We fabricated heterojunction organic field-effect transistors (OFETs) using copper phthalocyanine (CuPc) and hexadecafluorophtholocyaninatocopper (F16CuPc) as hole transport layer and electron transport layer, respectively. Compared with F16CuPc based OFETs, the electron field-effect mobility in the heterojunction OFETs increased from 3.1 × 10-3 to 8.7 × 10-3 cm2/(V·s), but the p-type behavior was not observed. To enhanced the hole injection, we modified the source-drain electrodes using the MoO3 buffer layer, and the hole injection can be effectively improved. Eventually, the ambipolar transport characteristics of the CuPc/F16CuPc based OFETs with a MoO3 buffer layer were achieved, and the field-effect mobilities of electron and hole were 2.5 × 10-3 and 3.1 × 10-3 cm2/(V·s), respectively. Project supported by the National Natural Science Foundation of China (Nos. 61475074, 61204095).

  17. Growth of a-plane GaN on lattice-matched ZnO substrates using a room-temperature buffer layer

    NASA Astrophysics Data System (ADS)

    Kobayashi, Atsushi; Kawano, Satoshi; Ueno, Kohei; Ohta, Jitsuo; Fujioka, Hiroshi; Amanai, Hidetaka; Nagao, Satoru; Horie, Hideyoshi

    2007-11-01

    Nonpolar a-plane GaN films were grown on nearly lattice-matched a-plane ZnO substrates by pulsed laser deposition. Growth of GaN on a-plane ZnO at conventional growth temperatures (around 700°C) resulted in the formation of polycrystalline materials, probably due to the interface reactions between GaN and ZnO. However, single crystalline a-plane GaN with an atomically flat surface can be grown on ZnO at room temperature in the layer-by-layer mode. X-ray diffraction and photoluminescence measurements revealed that high-quality a-plane GaN films can also be grown at elevated substrate temperatures (up to 700°C) by using a RT a-plane GaN film as a buffer layer.

  18. In-plane texturing control of Y-Ba-Cu-O thin films on polycrystalline substrates by ion-beam-modified intermediate buffer layers

    NASA Astrophysics Data System (ADS)

    Iijima, Y.; Onabe, K.; Futaki, N.; Tanabe, N.; Sadakata, N.; Kohno, O.; Ikeno, Y.

    1993-03-01

    Biaxially aligned YBCO thin films were successfully formed on polycrystalline Ni-based alloy by using ion-beam-modified yttria-stabilized-zirconia (YSZ) intermediate layers. YSZ layers were deposited by ion-beam-assisted deposition (IBAD) with concurrent off-axis ion beam bombardment. The YSZ 100-line axis was oriented normal to the substrate, and a YSZ 111-line axis was aligned to the bombarding ion beam axis. Explicit in-plane ordering was achieved on polycrystalline metallic substrates without epitaxial relationships. C-axis-oriented YBCO thin films were grown on those buffer layers, with controlled in-plane a- and b-axes, by pulsed laser deposition. At 77 K, 0 T and at 77 K, 0.6 T, 4.3 x 10 exp 5 A/sq cm and 1.1 x 10 exp 5 A/sq cm were achieved, respectively.

  19. Growth of Fe3O4(001) thin films on Pt(100): Tuning surface termination with an Fe buffer layer

    NASA Astrophysics Data System (ADS)

    Davis, Earl M.; Zhang, Ke; Cui, Yi; Kuhlenbeck, Helmut; Shaikhutdinov, Shamil; Freund, Hans-Joachim

    2015-06-01

    We studied the preparation of well-ordered thin Fe3O4(001) films on a metallic substrate, Pt(100), using LEED and STM. The results show that film growth either by Fe reactive deposition in oxygen or by deposition-oxidation cycles onto pure Pt(100) results primarily in (111)-oriented surfaces. To grow Fe3O4(001) films, the preparation must include deposition of an Fe buffer layer as previously suggested for the growth of Fe3O4(001) on MgO(001) (Spiridis et al. Phys. Rev. B 74 (2006) 155423). Two stable (so called "dimer"- and B-layer) surface terminations were observed, both exhibiting a (√2 × √2)R450 reconstruction. Several intermediate, Fe-rich terminations were observed during the annealing process of an initially dimer-like structure. The process critically depends on the thickness of the buffer layer, which can be used as a tuning parameter for surface structures.

  20. Growth of epitaxial Y 2O 3 buffer layers on biaxially textured Ni-W substrates for YBCO coated conductors by MOD approach

    NASA Astrophysics Data System (ADS)

    Bhuiyan, M. S.; Paranthaman, M.; Kang, S.; Lee, D. F.; Salama, K.

    2005-06-01

    We have grown epitaxial Y 2O 3 buffer layers on biaxially textured Ni-W substrates for YBCO coated conductors using a newly developed metal organic decomposition (MOD) approach. Y 2O 3 precursor solution of 0.25 M concentration was spin coated on short samples of Ni-3 at.%W (Ni-W) substrates and heat-treated at 1150 °C in a gas mixture of Ar-4% H 2 for an hour. Detailed X-ray studies indicate that Y 2O 3 films have good out-of-plane and in-plane textures with full-width-half-maximum values of 6.22° and 7.51°, respectively. SEM and AFM investigations of Y 2O 3 films reveal a fairly dense and smooth microstructure without cracks and porosity. Highly textured YSZ barrier layers and CeO 2 cap layers were deposited on MOD Y 2O 3-buffered Ni-W substrates using rf-magnetron sputtering. Pulsed laser deposition was used to grow YBCO films on these substrates. A critical current, Jc, of about 1.21 MA/cm 2 at 77 K and self-field was obtained on YBCO (PLD)/CeO 2 (sputtered)/YSZ (sputtered)/Y 2O 3 (spin-coated)/Ni-W.

  1. MOD approach for the growth of epitaxial CeO2 buffer layers on biaxially textured Ni W substrates for YBCO coated conductors

    NASA Astrophysics Data System (ADS)

    Bhuiyan, M. S.; Paranthaman, M.; Sathyamurthy, S.; Aytug, T.; Kang, S.; Lee, D. F.; Goyal, A.; Payzant, E. A.; Salama, K.

    2003-11-01

    We have grown epitaxial CeO2 buffer layers on biaxially textured Ni-W substrates for YBCO coated conductors using a newly developed metal organic decomposition (MOD) approach. Precursor solution of 0.25 M concentration was spin coated on short samples of Ni-3 at%W (Ni-W) substrates and heat-treated at 1100 °C in a gas mixture of Ar-4%H2 for 15 min. Detailed x-ray studies indicate that CeO2 films have good out-of-plane and in-plane textures with full-width-half-maximum values of 5.8° and 7.5°, respectively. High temperature in situ XRD studies show that the nucleation of CeO2 films starts at 600 °C and the growth completes within 5 min when heated at 1100 °C. SEM and AFM investigations of CeO2 films reveal a fairly dense microstructure without cracks and porosity. Highly textured YSZ barrier layers and CeO2 cap layers were deposited on MOD CeO2-buffered Ni-W substrates using rf-magnetron sputtering. Pulsed laser deposition (PLD) was used to grow YBCO films on these substrates. A critical current, Jc, of about 1.5 MA cm-2 at 77 K and self-field was obtained on YBCO (PLD)/CeO2 (sputtered)/YSZ (sputtered)/CeO2 (spin-coated)/Ni-W.

  2. A simple MOD method to grow a single buffer layer of Ce 0.8Gd 0.2O 1.9 (CGO) for coated conductors

    NASA Astrophysics Data System (ADS)

    Liu, Min; Shi, Dongqi; Suo, Hongli; Ye, Shuai; Zhao, Yue; Zhu, Yonghua; Li, Qi; Wang, Lin; Jihyun, Ahn; Zhou, Meiling

    2009-03-01

    A single Ce 0.8Gd 0.2O 1.9 (CGO) buffer layer was successfully grown on the home-made textured Ni-5 at.%W (Ni-5W) substrates for YBCO coated conductors by a simple metal-organic deposition (MOD) technique. The precursor solution was prepared using a newly developed process and only contained common metal-organic salts of both Ce and Gd dissolved into a propionic acid solvent. The precursor solution at 0.4 M concentration was spin coated on short samples of Ni-5W substrates and heat-treated at 1100 °C in a mixture gas of 5% H 2 in Ar for an hour. X-ray studies indicated that the CGO films had good out-of-plane and in-plane textures with full-width-half-maximum values of 4.18° and 6.19°, respectively. Atomic force microscope (AFM) investigations of the CGO films revealed that most of the grain boundary grooves on the Ni-5W surface were found to be well covered by CGO layers, which had a fairly dense and smooth microstructure without cracks and porosity. These results indicate that our MOD technique is very promising for further development of single buffer layer architecture for YBCO coated conductors, due to its low cost and simple process.

  3. Reduction of the dark current in a P3HT-based organic photodiode with a ytterbium-fluoride buffer layer for electron transport

    NASA Astrophysics Data System (ADS)

    Lim, Seong Bin; Ji, Chan Hyuk; Kim, Kee Tae; Oh, Se Young

    2016-08-01

    Photodiodes are widely used to convert light into electrical signals. The conventional silicon (Si) based photodiodes boast high photoelectric conversion efficiency and detectivity. However, in general, inorganic-based photodiodes have low sensitivity at visible wavelengths due to their absorption of infrared wavelengths. Recently, electrical conducting polymer-based photodiodes have received significant attention due to their flexibility, low cost of production and high sensitivity at visible wavelength ranges. In the present work, we fabricated an organic photodiode (OPD) with a consisting of ITO/ NiO x / P3HT:PC60BM/ YbF3/Al structure. In the OPD, a yitterbium fluoride (YbF3) buffer layer was used as the electron transport layer. The OPD was analyzed by using optical-electrical measurements to determine its J-V, detectivity, and dynamic characteristics. We investigated the physical effects of the YbF3 buffer layer on the performance of OPD such as its carrier extraction, leakage current and ohmic characteristics.

  4. Improvements in Optical Properties of Semipolar r-Plane GaN Films Grown Using Atomically Flat ZnO Substrates and Room-Temperature Epitaxial Buffer Layers

    NASA Astrophysics Data System (ADS)

    Kobayashi, Atsushi; Kawano, Satoshi; Ueno, Kohei; Ohta, Jitsuo; Fujioka, Hiroshi

    2010-10-01

    We have investigated the structural and optical properties of semipolar r-plane GaN{1102} films grown on nearly-lattice-matched ZnO substrates with room-temperature (RT) epitaxial GaN buffer layers, putting special emphasis on the effect of surface treatment of the ZnO substrates. The full-width at half-maximum values of X-ray rocking curves for 1-µm-thick r-plane GaN layers grown at 700 °C on these RT-buffer layers, as measured using various X-ray incidence geometries, are in a range from 313 to 598 arcsec. Photoluminescence peaks attributable to structural defects in the r-plane GaN films have been shown to be reduced, and the near-band-edge emission has been enhanced by approximately 5 times by the use of atomically-flat r-plane ZnO substrates prepared by high-temperature annealing in air inside a box made of ZnO.

  5. High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer.

    PubMed

    Muhammed, M M; Roldan, M A; Yamashita, Y; Sahonta, S-L; Ajia, I A; Iizuka, K; Kuramata, A; Humphreys, C J; Roqan, I S

    2016-07-14

    We demonstrate the high structural and optical properties of InxGa1-xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and uniform. Transmission electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 × 10(7) cm(-2)) at the grain centers. High-resolution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annihilate each other. The dislocation behavior is due to irregular (01) β-Ga2O3 surface at the interface and distorted buffer layer, followed by relaxed GaN epilayer. Photoluminescence results confirm high optical quality and time-resolved spectroscopy shows that the recombination is governed by bound excitons. We find that a low root-mean-square average (≤1.5 nm) of InxGa1-xN epilayers can be achieved with high optical quality of InxGa1-xN epilayers. We reveal that (01)-oriented β-Ga2O3 substrate has a strong potential for use in large-scale high-quality vertical light emitting device design.

  6. High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer

    NASA Astrophysics Data System (ADS)

    Muhammed, M. M.; Roldan, M. A.; Yamashita, Y.; Sahonta, S.-L.; Ajia, I. A.; Iizuka, K.; Kuramata, A.; Humphreys, C. J.; Roqan, I. S.

    2016-07-01

    We demonstrate the high structural and optical properties of InxGa1‑xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and uniform. Transmission electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 × 107 cm‑2) at the grain centers. High-resolution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annihilate each other. The dislocation behavior is due to irregular (01) β-Ga2O3 surface at the interface and distorted buffer layer, followed by relaxed GaN epilayer. Photoluminescence results confirm high optical quality and time-resolved spectroscopy shows that the recombination is governed by bound excitons. We find that a low root-mean-square average (≤1.5 nm) of InxGa1‑xN epilayers can be achieved with high optical quality of InxGa1‑xN epilayers. We reveal that (01)-oriented β-Ga2O3 substrate has a strong potential for use in large-scale high-quality vertical light emitting device design.

  7. High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer

    PubMed Central

    Muhammed, M. M.; Roldan, M. A.; Yamashita, Y.; Sahonta, S.-L.; Ajia, I. A.; Iizuka, K.; Kuramata, A.; Humphreys, C. J.; Roqan, I. S.

    2016-01-01

    We demonstrate the high structural and optical properties of InxGa1−xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and uniform. Transmission electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 × 107 cm−2) at the grain centers. High-resolution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annihilate each other. The dislocation behavior is due to irregular (01) β-Ga2O3 surface at the interface and distorted buffer layer, followed by relaxed GaN epilayer. Photoluminescence results confirm high optical quality and time-resolved spectroscopy shows that the recombination is governed by bound excitons. We find that a low root-mean-square average (≤1.5 nm) of InxGa1−xN epilayers can be achieved with high optical quality of InxGa1−xN epilayers. We reveal that (01)-oriented β-Ga2O3 substrate has a strong potential for use in large-scale high-quality vertical light emitting device design. PMID:27412372

  8. High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer.

    PubMed

    Muhammed, M M; Roldan, M A; Yamashita, Y; Sahonta, S-L; Ajia, I A; Iizuka, K; Kuramata, A; Humphreys, C J; Roqan, I S

    2016-01-01

    We demonstrate the high structural and optical properties of InxGa1-xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and uniform. Transmission electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 × 10(7) cm(-2)) at the grain centers. High-resolution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annihilate each other. The dislocation behavior is due to irregular (01) β-Ga2O3 surface at the interface and distorted buffer layer, followed by relaxed GaN epilayer. Photoluminescence results confirm high optical quality and time-resolved spectroscopy shows that the recombination is governed by bound excitons. We find that a low root-mean-square average (≤1.5 nm) of InxGa1-xN epilayers can be achieved with high optical quality of InxGa1-xN epilayers. We reveal that (01)-oriented β-Ga2O3 substrate has a strong potential for use in large-scale high-quality vertical light emitting device design. PMID:27412372

  9. High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer

    NASA Astrophysics Data System (ADS)

    Muhammed, M. M.; Roldan, M. A.; Yamashita, Y.; Sahonta, S.-L.; Ajia, I. A.; Iizuka, K.; Kuramata, A.; Humphreys, C. J.; Roqan, I. S.

    2016-07-01

    We demonstrate the high structural and optical properties of InxGa1-xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and uniform. Transmission electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 × 107 cm-2) at the grain centers. High-resolution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annihilate each other. The dislocation behavior is due to irregular (01) β-Ga2O3 surface at the interface and distorted buffer layer, followed by relaxed GaN epilayer. Photoluminescence results confirm high optical quality and time-resolved spectroscopy shows that the recombination is governed by bound excitons. We find that a low root-mean-square average (≤1.5 nm) of InxGa1-xN epilayers can be achieved with high optical quality of InxGa1-xN epilayers. We reveal that (01)-oriented β-Ga2O3 substrate has a strong potential for use in large-scale high-quality vertical light emitting device design.

  10. In-plane aligned YBCO film on textured YSZ buffer layer deposited on NiCr alloy tape by laser ablation with only O+ ion beam assistance

    NASA Astrophysics Data System (ADS)

    Tang Huang, Xin; Qing Wang, You; Wang, Qiu Liang; Chen, Qing Ming

    2000-02-01

    High critical current density and in-plane aligned YBa2 Cu3 O7-x (YBCO) film on a textured yttria-stabilized zirconia (YSZ) buffer layer deposited on NiCr alloy (Hastelloy c-275) tape by laser ablation with only O+ ion beam assistance was fabricated. The values of the x-ray phi-scan full width at half-maximum (FWHM) for YSZ(202) and YBCO(103) are 18° and 11°, respectively. The critical current density of YBCO film is 7.9 × 105 A cm-2 at liquid nitrogen temperature and zero field, and its critical temperature is 90 K.

  11. Nitridation- and Buffer-Layer-Free Growth of [1100]-Oriented GaN Domains on m-Plane Sapphire Substrates by Using Hydride Vapor Phase Epitaxy

    NASA Astrophysics Data System (ADS)

    Seo, Yeonwoo; Lee, Sanghwa; Jue, Miyeon; Yoon, Hansub; Kim, Chinkyo

    2012-12-01

    Over a wide range of growth conditions, GaN domains were grown on bare m-plane sapphire substrates by using hydride vapor phase epitaxy (HVPE), and the relation between these growth conditions and three possible preferred crystallographic orientations ([1100], [1103], [1122]) of GaN domains was investigated. In contrast with the previous reports by other groups, our results revealed that preferentially [1100]-oriented GaN domains were grown without low-temperature nitridation or a buffer layer, and that the growth condition of preferentially [1100]-oriented GaN was insensitive to V/III ratio.

  12. A sputtered CdS buffer layer for co-electrodeposited Cu2ZnSnS4 solar cells with 6.6% efficiency.

    PubMed

    Tao, Jiahua; Zhang, Kezhi; Zhang, Chuanjun; Chen, Leilei; Cao, Huiyi; Liu, Junfeng; Jiang, Jinchun; Sun, Lin; Yang, Pingxiong; Chu, Junhao

    2015-06-28

    Cu2ZnSnS4 thin films with thicknesses ranging from 0.35 to 1.85 μm and micron-sized grains (0.5-1.5 μm) were synthesized using co-electrodeposited Cu-Zn-Sn-S precursors with different deposition times. Here we have introduced a sputtered CdS buffer layer for the development of CZTS solar cells for the first time, which enables breakthrough efficiencies up to 6.6%. PMID:26027699

  13. Improvement of quantum efficiency of P3HT:PCBM-based organic photovoltaic cells using DMDCNQI as an N-type dopant and buffer layer.

    PubMed

    Lee, Joo Hyung; Yang, Eui Yeol; Oh, Se Young

    2013-03-01

    In previous work, we have reported that a P3HT:PCBM-based organic photovoltaic cell using a thermally evaporated DMDCNQI buffer layer shows a high power conversion efficiency. In the present work, we have fabricated organic photovoltaic cells consisting of ITO/PEDOT:PSS/P3HT:PCBM:DMDCNQI/DMDCNQI/Al using an all-solution process. A thin, uniform DMDCNQI film was obtained in a methanol solution with high solubility and low viscosity. The prepared device shows a high power conversion efficiency of 2.9%. In particular, a maximum external quantum efficiency of 81% was obtained.

  14. Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

    SciTech Connect

    Bairamis, A.; Zervos, Ch.; Georgakilas, A.; Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G.

    2014-09-15

    AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300 nm GaN/ 200 nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8 × 10{sup 12} to 2.1 × 10{sup 13} cm{sup −2} as the AlN barrier thickness increased from 2.2 to 4.5 nm, while a 4.5 nm AlN barrier would result to 3.1 × 10{sup 13} cm{sup −2} on a GaN buffer layer. The 3.0 nm AlN barrier structure exhibited the highest 2DEG mobility of 900 cm{sup 2}/Vs for a density of 1.3 × 10{sup 13} cm{sup −2}. The results were also confirmed by the performance of 1 μm gate-length transistors. The scaling of AlN barrier thickness from 1.5 nm to 4.5 nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63 A/mm. The maximum drain-source current was 1.1 A/mm for AlN barrier thickness of 3.0 nm and 3.7 nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0 nm AlN barrier.

  15. Improved performances of CuPc/C60-based solar cell by using randomly and irregularly embossed PEDOT:PSS as anode buffer layer

    NASA Astrophysics Data System (ADS)

    Zhang, Haiqing; Hao, Yuying; Zhang, Fan; Sun, Qinjun; Li, Zhanfeng; Cui, Yanxia; Wang, Hua; Shi, Fang

    2015-07-01

    An unique organic solar cell (OSC) based on copper phthalocyanine (CuPc) and fullerene C60 as the electron donor and acceptor materials is demonstrated with randomly and irregularly embossed poly (3, 4-ethylenedioxythiophene) poly (styrenesulfonate) (PEDOT: PSS) as anode buffer layer. The effect of PEDOT:PSS nanostructure is characterized by optical and electrical measurements. The results indicate that introducing irregular nanostructure with random distribution into OSC leads to longer light paths by efficient scattering of the incident light and thus higher light absorption in active layer. Moreover, such a nanostructure increases the junction area, allowing more efficient exciton dissociation and charge carrier transfer/collection. These combined effects result in a prominent enhancement of 25.5% in average power conversion efficiency relative to the non-structured OSC due to the increases in short-circuit current and fill factor.

  16. Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer

    PubMed Central

    2013-01-01

    To improve the operation current lowing of the Zr:SiO2 RRAM devices, a space electric field concentrated effect established by the porous SiO2 buffer layer was investigated and found in this study. The resistive switching properties of the low-resistance state (LRS) and high-resistance state (HRS) in resistive random access memory (RRAM) devices for the single-layer Zr:SiO2 and bilayer Zr:SiO2/porous SiO2 thin films were analyzed and discussed. In addition, the original space charge limited current (SCLC) conduction mechanism in LRS and HRS of the RRAM devices using bilayer Zr:SiO2/porous SiO2 thin films was found. Finally, a space electric field concentrated effect in the bilayer Zr:SiO2/porous SiO2 RRAM devices was also explained and verified by the COMSOL Multiphysics simulation model. PMID:24330524

  17. Impact of thermal stability of poly(3,4-ethylenedioxythiophene): poly(4-styrenesulfonate) used as buffer layer in organic solar cells

    NASA Astrophysics Data System (ADS)

    Dang, Minh Trung; Cantú-Valle, Jesus; Hirsch, Lionel; Wantz, Guillaume

    2013-09-01

    We compared the performances of polymer-based photovoltaic devices prepared from different formulations of poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS). The PEDOT:PSS buffer layer is incorporated between the indium tin oxide (ITO) electrode and the active layer, which is composed of a blend of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). A highest efficiency of 3.86% (under AM1.5 solar illumination) was achieved for device prepared from a PEDOT:PSS trade-named high conductivity grade. However, annealing devices at a temperature over 120 °C results in decreased photovoltaic performance. This study shows that attention has to be paid to chemicals used to formulate high conductive PEDOT:PSS to become compatible with the production of solar cells involving thermal processing.

  18. Characterization of Sulfur Bonding in CdS:O Buffer Layers for CdTe-based Thin-Film Solar Cells.

    PubMed

    Duncan, Douglas A; Kephart, Jason M; Horsley, Kimberly; Blum, Monika; Mezher, Michelle; Weinhardt, Lothar; Häming, Marc; Wilks, Regan G; Hofmann, Timo; Yang, Wanli; Bär, Marcus; Sampath, Walajabad S; Heske, Clemens

    2015-08-01

    On the basis of a combination of X-ray photoelectron spectroscopy and synchrotron-based X-ray emission spectroscopy, we present a detailed characterization of the chemical structure of CdS:O thin films that can be employed as a substitute for CdS layers in thin-film solar cells. It is possible to analyze the local chemical environment of the probed elements, in particular sulfur, hence allowing insights into the species-specific composition of the films and their surfaces. A detailed quantification of the observed sulfur environments (i.e., sulfide, sulfate, and an intermediate oxide) as a function of oxygen content is presented, allowing a deliberate optimization of CdS:O thin films for their use as alternative buffer layers in thin-film photovoltaic devices.

  19. Zero lattice mismatch and twin-free single crystalline ScN buffer layers for GaN growth on silicon

    SciTech Connect

    Lupina, L.; Zoellner, M. H.; Dietrich, B.; Capellini, G.; Niermann, T.; Lehmann, M.; Thapa, S. B.; Haeberlen, M.; Storck, P.; Schroeder, T.

    2015-11-16

    We report the growth of thin ScN layers deposited by plasma-assisted molecular beam epitaxy on Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3}/Si(111) substrates. Using x-ray diffraction, Raman spectroscopy, and transmission electron microscopy, we find that ScN films grown at 600 °C are single crystalline, twin-free with rock-salt crystal structure, and exhibit a direct optical band gap of 2.2 eV. A high degree of crystalline perfection and a very good lattice matching between ScN and GaN (misfit < 0.1%) makes the ScN/Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3} buffer system a very promising template for the growth of high quality GaN layers on silicon.

  20. Fabrication of highly textured Ni-7at.%W substrates and further application for coated La 2Zr 2O 7 buffer layer

    NASA Astrophysics Data System (ADS)

    Cheng, Y. L.; Suo, H. L.; Zhao, Y.; Gao, M. M.; Zhu, Y. H.; Wang, R.; Liu, M.; Ma, L.; Zhou, M. L.

    2011-11-01

    In this work, highly cube textured Ni-7at.%W (Ni7W) substrate was fabricated from the ingots synthesized by Spark Plasma Sintering (SPS) technique. Both the La 2Zr 2O 7 (LZO) buffer layer and the YBCO superconducting layer were coated using chemical solution deposition (CSD) and pulsed laser deposition (PLD) layer by layer. The full-width-at-half-maximum (FWHM) values of the (1 1 1) phi-scan and the (2 0 0) ω-scan in rolling direction of the Ni7W substrate were 6.30° and 5.08°, respectively. The EBSD analyses indicated that the percentage of the cube texture component on the surface of the as-obtained Ni7W substrate was 99.4% within a tolerance angle of less than 10°. Highly epitaxial growth of homogenous crack-free LZO film was obtained cube-on-cube relative to the Ni7W substrate, with FWHM values of (2 2 2) phi-scan and (4 0 0) ω-scan of 7.57° and 5.73°, respectively. The critical temperature of the YBCO layer prepared on LZO/Ni7 W substrate is about 90.5 K, while the critical current density is 1.25 MA cm -2 (77 K, sf).

  1. Modification of electron states in CdTe absorber due to a buffer layer in CdTe/CdS solar cells

    NASA Astrophysics Data System (ADS)

    Fedorenko, Y. G.; Major, J. D.; Pressman, A.; Phillips, L. J.; Durose, K.

    2015-10-01

    By application of the ac admittance spectroscopy method, the defect state energy distributions were determined in CdTe incorporated in thin film solar cell structures concluded on ZnO, ZnSe, and ZnS buffer layers. Together with the Mott-Schottky analysis, the results revealed a strong modification of the defect density of states and the concentration of the uncompensated acceptors as influenced by the choice of the buffer layer. In the solar cells formed on ZnSe and ZnS, the Fermi level and the energy position of the dominant deep trap levels were observed to shift closer to the midgap of CdTe, suggesting the mid-gap states may act as recombination centers and impact the open-circuit voltage and the fill factor of the solar cells. For the deeper states, the broadening parameter was observed to increase, indicating fluctuations of the charge on a microscopic scale. Such changes can be attributed to the grain-boundary strain and the modification of the charge trapped at the grain-boundary interface states in polycrystalline CdTe.

  2. Modification of electron states in CdTe absorber due to a buffer layer in CdTe/CdS solar cells

    SciTech Connect

    Fedorenko, Y. G. Major, J. D.; Pressman, A.; Phillips, L. J.; Durose, K.

    2015-10-28

    By application of the ac admittance spectroscopy method, the defect state energy distributions were determined in CdTe incorporated in thin film solar cell structures concluded on ZnO, ZnSe, and ZnS buffer layers. Together with the Mott-Schottky analysis, the results revealed a strong modification of the defect density of states and the concentration of the uncompensated acceptors as influenced by the choice of the buffer layer. In the solar cells formed on ZnSe and ZnS, the Fermi level and the energy position of the dominant deep trap levels were observed to shift closer to the midgap of CdTe, suggesting the mid-gap states may act as recombination centers and impact the open-circuit voltage and the fill factor of the solar cells. For the deeper states, the broadening parameter was observed to increase, indicating fluctuations of the charge on a microscopic scale. Such changes can be attributed to the grain-boundary strain and the modification of the charge trapped at the grain-boundary interface states in polycrystalline CdTe.

  3. α,α'-Diarylacenaphtho[1,2-c]phosphole P-oxides: divergent synthesis and application to cathode buffer layers in organic photovoltaics.

    PubMed

    Matano, Yoshihiro; Saito, Arihiro; Suzuki, Yuto; Miyajima, Tooru; Akiyama, Seiji; Otsubo, Saika; Nakamoto, Emi; Aramaki, Shinji; Imahori, Hiroshi

    2012-10-01

    A divergent method for the synthesis of α,α'-diarylacenaphtho[1,2-c]phosphole P-oxides has been established; α,α'-dibromoacenaphtho[c]phosphole P-oxide, which was prepared through a Ti(II)-mediated cyclization of 1,8-bis(trimethylsilylethynyl)naphthalene, underwent a Stille coupling with three different kinds of aryltributylstannanes to afford the α,α'-diarylacenaphtho[c]phosphole P-oxides in moderate to good yields. X-ray crystallographic analyses and UV/Vis absorption/fluorescence measurements have revealed that the degree of π-conjugation, the packing motif, the electron-accepting ability, and the thermal stability of the acenaphtho[c]phosphole π-systems are finely tunable with the α-aryl substituents. All the P=O and P=S derivatives exhibited high stability in their electrochemically reduced state. To use this class of arene-fused phosphole π-systems as n-type semiconducting materials, we evaluated device performances of the bulk heterojunction organic photovoltaics (OPV) that consist of poly(3-hexylthiophene), an indene-C(70) bisadduct, and a cathode buffer layer. The insertion of the diarylacenaphtho[c]phosphole P-oxides as the buffer layer was found to improve the power conversion efficiency of the polymer-based OPV devices.

  4. Effect of process temperature on structure and magnetic properties of perpendicularly magnetized D022-Mn3Ge thin films on a Cr buffer layer

    NASA Astrophysics Data System (ADS)

    Sugihara, Atsushi; Suzuki, Kazuya; Miyazaki, Terunobu; Mizukami, Shigemi

    2015-08-01

    We investigated the effect of post-annealing on the perpendicular magnetic anisotropy constant (Ku) and surface roughness (Ra) of Mn3Ge thin films grown at comparatively low temperatures (room temperature, 150, 200, and 250 °C) on Cr buffer layers. The films grown at ≥200 °C exhibit a D022-ordered crystal structure in an as-deposited state. The post-annealing process demonstrates differences in trends between the 200-°C-grown film and the 250-°C-grown film. The 200-°C-grown film displays significant degradation of Ku and an increase in Ra upon annealing at >300 °C because of its poor thermal durability, while the 250-°C-grown film is still intact even at 500 °C. The 250-°C-grown film post-annealed at 300 °C displays relatively high Ku while Ra remains low. It may be possible to grow D022-Mn3Ge with higher Ku and low Ra using a buffer-layer material with a lattice-matched crystal structure with D022-Mn3Ge and higher thermal durability than Cr.

  5. Self-Separation of Sublimation-Grown AlN with AlSiN Buffer Layer

    NASA Astrophysics Data System (ADS)

    Nishino, Katsushi; Nakauchi, Jun; Hayashi, Kotaro; Tsukihara, Masashi

    2013-08-01

    AlN was grown by a sublimation method on 6H-SiC. We found the grown AlN layer is easily separated from the substrate when Si powder is added to the AlN source powder. The formation of AlSiN layer with the Si content of 15% at the AlN/6H-SiC interface was confirmed by energy-dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD). This AlSiN layer causes the separation of AlN.

  6. Comparative Study of Zn(O,S) Buffer Layers and CIGS Solar Cells Fabricated by CBD, ALD, and Sputtering: Preprint

    SciTech Connect

    Ramanathan, K.; Mann, J.; Glynn, S.; Christensen, S.; Pankow, J.; Li, J.; Scharf, J.; Mansfield, L. M.; Contreras, M. A.; Noufi, R.

    2012-06-01

    Zn(O,S) thin films were deposited by chemical bath deposition (CBD), atomic layer deposition, and sputtering. Composition of the films and band gap were measured and found to follow the trends described in the literature. CBD Zn(O,S) parameters were optimized and resulted in an 18.5% efficiency cell that did not require post annealing, light soaking, or an undoped ZnO layer. Promising results were obtained with sputtering. A 13% efficiency cell was obtained for a Zn(O,S) emitter layer deposited with 0.5%O2. With further optimization of process parameters and an analysis of the loss mechanisms, it should be possible to increase the efficiency.

  7. High efficiency Cu(In,Ga)Se{sub 2} thin film solar cells without intermediate buffer layers

    SciTech Connect

    Ramanathan, K.; Wiesner, H.; Asher, S.; Niles, D.; Bhattacharya, R.N.; Keane, J.; Contreras, M.A.; Noufi, R.

    1998-09-01

    The nature of the interface between CuInGaSe{sub 2} (CIGS) and the chemical bath deposited CdS layer has been investigated. The authors show that heat-treating the absorbers in Cd- or Zn-containing solutions in the presence of ammonium hydroxide sets up an interfacial reaction with the possibility of an ion exchange occurring between Cd and Cu. The characteristics of devices made in this manner suggest that the reaction generates a thin, n-doped region in the absorber. The authors suggest that this aspect might be more important than the CdS layer in the formation of the junction. It is quite possible that the CdS/CuInSe{sub 2} device is a buried, shallow junction with a CdS window layer, rather than a heterojunction between CdS and CIGS. The authors use these ideas to develop methods for fabricating diodes without CdS or Cd.

  8. Electrodeposited Biaxially Textured CeO2 and CeO2:Sm Buffer Layer for YBCO Superconductor Oxide Films

    NASA Astrophysics Data System (ADS)

    Bhattacharya, Raghu; Phok, Sovannary; Spagnol, Priscila; Chaudhuri, Tapas

    2006-03-01

    Nonvacuum electrodeposition was used to prepare biaxially textured CeO2 and Sm-doped CeO2 coatings on Ni-W substrates. The samples were characterized by X-ray diffraction (including θ/2θ, pole figures, omega scans, and phi scans), atomic force microscopy (AFM), Auger electron spectroscopy (AES), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Full-width at half-maximum values of the ω scan and φ scan of the electrodeposited layers were better than those of the Ni-W base substrates, indicating improved biaxial texturing of the electrodeposited layers.

  9. Electrical properties of n-type GaSb substrates and p-type GaSb buffer layers for InAs/InGaSb superlattice infrared detectors

    SciTech Connect

    Mitchel, W. C. Haugan, H. J.; Mou, Shin; Brown, G. J.; Elhamri, S.; Berney, R.

    2015-09-15

    Lightly doped n-type GaSb substrates with p-type GaSb buffer layers are the preferred templates for growth of InAs/InGaSb superlattices used in infrared detector applications because of relatively high infrared transmission and a close lattice match to the superlattices. We report here temperature dependent resistivity and Hall effect measurements of bare substrates and substrate-p-type buffer layer structures grown by molecular beam epitaxy. Multicarrier analysis of the resistivity and Hall coefficient data demonstrate that high temperature transport in the substrates is due to conduction in both the high mobility zone center Γ band and the low mobility off-center L band. High overall mobility values indicate the absence of close compensation and that improved infrared and transport properties were achieved by a reduction in intrinsic acceptor concentration. Standard transport measurements of the undoped buffer layers show p-type conduction up to 300 K indicating electrical isolation of the buffer layer from the lightly n-type GaSb substrate. However, the highest temperature data indicate the early stages of the expected p to n type conversion which leads to apparent anomalously high carrier concentrations and lower than expected mobilities. Data at 77 K indicate very high quality buffer layers.

  10. Photovoltaic Performance and Interface Behaviors of Cu(In,Ga)Se2 Solar Cells with a Sputtered-Zn(O,S) Buffer Layer by High-Temperature Annealing.

    PubMed

    Wi, Jae-Hyung; Kim, Tae Gun; Kim, Jeong Won; Lee, Woo-Jung; Cho, Dae-Hyung; Han, Won Seok; Chung, Yong-Duck

    2015-08-12

    We selected a sputtered-Zn(O,S) film as a buffer material and fabricated a Cu(In,Ga)Se2 (CIGS) solar cell for use in monolithic tandem solar cells. A thermally stable buffer layer was required because it should withstand heat treatment during processing of top cell. Postannealing treatment was performed on a CIGS solar cell in vacuum at temperatures from 300-500 °C to examine its thermal stability. Serious device degradation particularly in VOC was observed, which was due to the diffusion of thermally activated constituent elements. The elements In and Ga tend to out-diffuse to the top surface of the CIGS, while Zn diffuses into the interface of Zn(O,S)/CIGS. Such rearrangement of atomic fractions modifies the local energy band gap and band alignment at the interface. The notch-shape induced at the interface after postannealing could function as an electrical trap during electron transport, which would result in the reduction of solar cell efficiency.

  11. Atomic layer deposited gallium oxide buffer layer enables 1.2 V open-circuit voltage in cuprous oxide solar cells.

    PubMed

    Lee, Yun Seog; Chua, Danny; Brandt, Riley E; Siah, Sin Cheng; Li, Jian V; Mailoa, Jonathan P; Lee, Sang Woon; Gordon, Roy G; Buonassisi, Tonio

    2014-07-16

    The power conversion efficiency of solar cells based on copper (I) oxide (Cu2 O) is enhanced by atomic layer deposition of a thin gallium oxide (Ga2 O3 ) layer. By improving band-alignment and passivating interface defects, the device exhibits an open-circuit voltage of 1.20 V and an efficiency of 3.97%, showing potential of over 7% efficiency.

  12. Investigation of ZnO thin films deposited on ferromagnetic metallic buffer layer by molecular beam epitaxy toward realization of ZnO-based magnetic tunneling junctions

    SciTech Connect

    Belmoubarik, M.; Nozaki, T.; Sahashi, M.; Endo, H.

    2013-05-07

    Deposition of ZnO thin films on a ferromagnetic metallic buffer layer (Co{sub 3}Pt) by molecular beam epitaxy technique was investigated for realization of ZnO-based magnetic tunneling junctions with good quality hexagonal ZnO films as tunnel barriers. For substrate temperature of 600 Degree-Sign C, ZnO films exhibited low oxygen defects and high electrical resistivity of 130 {Omega} cm. This value exceeded that of hexagonal ZnO films grown by sputtering technique, which are used as tunnel barriers in ZnO-MTJs. Also, the effect of oxygen flow during deposition on epitaxial growth conditions and Co{sub 3}Pt surface oxidation was discussed.

  13. Superconducting YBa2Cu3O7 films on Si and GaAs with conducting indium tin oxide buffer layers

    NASA Astrophysics Data System (ADS)

    James, J. H.; Kellett, B. J.; Gauzzi, A.; Dwir, B.; Pavuna, D.

    1991-03-01

    Superconducting YBa2Cu3O7-delta (YBCO) thin films have been grown in situ by ion beam sputtering on Si and GaAs substrates with intermediate, conducting Indium Tin Oxide (ITO) buffer layers. Uniform, textured YBCO films on ITO exhibit Tc onset at 92K and Tc0 at 68K and 60K on Si and GaAs substrates respectively, the latter value is the highest Tc reported on GaAs. YBCO/ITO films exhibit metallic resistivity behavior. In situ YBCO films on SrTiO3 show Tc onset = 92K and Tc0 = 90.5K, transition widths are less than 1K. A simple optical bolometer has been constructed from YBCO films on SrTiO3. Tunnelling measurements have also been carried out using the first YBCO-Pb window-type tunnel junctions.

  14. Modification of opto-electronic properties of ZnO by incorporating metallic tin for buffer layer in thin film solar cells

    SciTech Connect

    Deepu, D. R.; Jubimol, J.; Kartha, C. Sudha; Louis, Godfrey; Vijayakumar, K. P.; Kumar, K. Rajeev

    2015-06-24

    In this report, the effect of incorporation of metallic tin (Sn) on opto-electronic properties of ZnO thin films is presented. ZnO thin films were deposited through ‘automated chemical spray pyrolysis’ (CSP) technique; later different quantities of ‘Sn’ were evaporated on it and subsequently annealed. Vacuum annealing showed a positive effect on crystallinity of films. Creation of sub band gap levels due to ‘Sn’ diffusion was evident from the absorption and PL spectra. The tin incorporated films showed good photo response in visible region. Tin incorporated ZnO thin films seem to satisfy the desirable criteria for buffer layer in thin film solar cells.

  15. Dark current reduction of small molecule organic photodetectors by controlling gap states of molybdenum oxide buffer layers

    NASA Astrophysics Data System (ADS)

    Kim, Seong Heon; Heo, Sung; Yun, Dong-Jin; Satoh, Ryu-ichi; Park, Gyeongsu; Kim, Kyu-Sik

    2016-09-01

    The gap states of the molybdenum-oxide (MoO x ) hole-extraction layer (HEL) in an organic photodetector (OPD) device, which originate from oxygen-vacancy defects, are controlled by appropriate plasma treatments on the MoO x layer. The density of MoO x gap states, investigated using X-ray photoelectron spectroscopy (XPS), is enhanced and depressed with Ar- and O2-plasma treatments, respectively. The dark current of an OPD with a MoO x HEL is considerably reduced by controlling the MoO x gap states using the plasma-treatment method. The mechanism of dark-current reduction may be interpreted by reduced gap states and by a suitable energy level bending and alignment.

  16. High performance planar p-i-n perovskite solar cells with crown-ether functionalized fullerene and LiF as double cathode buffer layers

    SciTech Connect

    Liu, Xiaodong; Zhou, Yi E-mail: songbo@suda.edu.cn Song, Bo E-mail: songbo@suda.edu.cn; Lei, Ming; Li, Yongfang E-mail: songbo@suda.edu.cn

    2015-08-10

    Double cathode buffer layers (CBLs) composed of fullerene derivative functionalized with a crown-ether end group in its side chain (denoted as PCBC) and a LiF layer were introduced between the PCBM acceptor layer and the top cathode in planar p-i-n perovskite solar cells (pero-SCs) based on CH{sub 3}NH{sub 3}PbI{sub 3−X}Cl{sub X}. The devices with the PCBC/LiF double CBLs showed significant improvements in power conversion efficiency (PCE) and long-term stability when compared to the device with LiF single CBL. Through optimizing the spin-coating speed of PCBC, a maximum PCE of 15.53% has been achieved, which is approximately 15% higher than that of the device with single LiF CBL. The remarkable improvement in PCE can be attributed to the formation of a better ohmic contact in the CBL between PCBC and LiF/Al electrode arising from the dipole moment of PCBC, leading to the enhanced fill factor and short-circuit current density (J{sub sc}). Besides the PCE, the long-term stability of the devices with PCBC interlayer is also superior to that of the device with LiF single CBL, which is due to the more effective protection for the perovskite/PCBM interface.

  17. Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si(111)

    SciTech Connect

    Ravikiran, L.; Radhakrishnan, K.; Agrawal, M.; Dharmarasu, N.; Munawar Basha, S.

    2013-09-28

    The effect of strain states of AlN/GaN-stress mitigating layer (SML) on buried crack density and its subsequent influence on the residual stresses in GaN buffer layers grown using ammonia-molecular beam epitaxy on 100-mm Si(111) substrate has been investigated. Different stages involved in the formation of buried cracks, which are crack initialization, growth of relaxed AlN layer, and subsequent lateral over growth, are identified using in-situ curvature measurements. While the increase of GaN thickness in AlN/GaN-SML enhanced its compressive strain relaxation and resulted in reduced buried crack spacing, the variation of AlN thickness did not show any effect on the crack spacing. Moreover, the decrease in the crack spacing (or increase in the buried crack density) was found to reduce the residual compression in 1st and 2nd GaN layers of AlN/GaN-SML structure. The higher buried crack density relaxed the compressive strain in 1st GaN layer, which further reduced its ability to compensate the tensile stress generated during substrate cool down, and hence resulted in lower residual compressive stress in 2nd GaN layer.

  18. Single Junction InGaP/GaAs Solar Cells Grown on Si Substrates using SiGe Buffer Layers

    NASA Technical Reports Server (NTRS)

    Ringel, S. A.; Carlin, J. A.; Andre, C. L.; Hudait, M. K.; Gonzalez, M.; Wilt, D. M.; Clark, E. B.; Jenkins, P.; Scheiman, D.; Allerman, A.

    2002-01-01

    Single junction InGaP/GaAs solar cells displaying high efficiency and record high open circuit voltage values have been grown by metalorganic chemical vapor deposition on Ge/graded SiGe/Si substrates. Open circuit voltages as high as 980 mV under AM0 conditions have been verified to result from a single GaAs junction, with no evidence of Ge-related sub-cell photoresponse. Current AM0 efficiencies of close to 16% have been measured for a large number of small area cells, whose performance is limited by non-fundamental current losses due to significant surface reflection resulting from greater than 10% front surface metal coverage and wafer handling during the growth sequence for these prototype cells. It is shown that at the material quality currently achieved for GaAs grown on Ge/SiGe/Si substrates, namely a 10 nanosecond minority carrier lifetime that results from complete elimination of anti-phase domains and maintaining a threading dislocation density of approximately 8 x 10(exp 5) per square centimeter, 19-20% AM0 single junction GaAs cells are imminent. Experiments show that the high performance is not degraded for larger area cells, with identical open circuit voltages and higher short circuit current (due to reduced front metal coverage) values being demonstrated, indicating that large area scaling is possible in the near term. Comparison to a simple model indicates that the voltage output of these GaAs on Si cells follows ideal behavior expected for lattice mismatched devices, demonstrating that unaccounted for defects and issues that have plagued other methods to epitaxially integrate III-V cells with Si are resolved using SiGe buffers and proper GaAs nucleation methods. These early results already show the enormous and realistic potential of the virtual SiGe substrate approach for generating high efficiency, lightweight and strong III-V solar cells.

  19. Plasma versus thermal annealing for the Au-catalyst growth of ZnO nanocones and nanowires on Al-doped ZnO buffer layers

    NASA Astrophysics Data System (ADS)

    Güell, Frank; Martínez-Alanis, Paulina R.; Roso, Sergio; Salas-Pérez, Carlos I.; García-Sánchez, Mario F.; Santana, Guillermo; Marel Monroy, B.

    2016-06-01

    We successfully synthesized ZnO nanocones and nanowires over polycrystalline Al-doped ZnO (AZO) buffer layers on fused silica substrates by a vapor-transport process using Au-catalyst thin films. Different Au film thicknesses were thermal or plasma annealed in order to analyze their influence on the ZnO nanostructure growth morphology. Striking differences have been observed. Thermal annealing generates a distribution of Au nanoclusters and plasma annealing induces a fragmentation of the Au thin films. While ZnO nanowires are found in the thermal-annealed samples, ZnO nanocones and nanowires have been obtained on the plasma-annealed samples. Enhancement of the preferred c-axis (0001) growth orientation was demonstrated by x-ray diffraction when the ZnO nanocones and nanowires have been grown over the AZO buffer layer. The transmittance spectra of the ZnO nanocones and nanowires show a gradual increase from 375 to 900 nm, and photoluminescence characterization pointed out high concentration of defects leading to observation of a broad emission band in the visible range from 420 to 800 nm. The maximum emission intensity peak position of the broad visible band is related to the thickness of the Au-catalyst for the thermal-annealed samples and to the plasma power for the plasma-annealed samples. Finally, we proposed a model for the plasma versus thermal annealing of the Au-catalyst for the growth of the ZnO nanocones and nanowires. These results are promising for renewable energy applications, in particular for its potential application in solar cells.

  20. Impact of the deposition conditions of buffer and windows layers on lowering the metastability effects in Cu(In,Ga)Se2/Zn(S,O)-based solar cell

    NASA Astrophysics Data System (ADS)

    Naghavi, Negar; Hildebrandt, Thibaud; Bouttemy, Muriel; Etcheberry, Arnaud; Lincot, Daniel

    2016-02-01

    The highest and most reproducible (Cu(In,Ga)Se2 (CIGSe) based solar-cell efficiencies are obtained by use of a very thin n-type CdS layer deposited by chemical bath deposition (CBD). However because of both Cadmium's adverse environmental impact and the narrow bandgap of CdS (2.4-2.5 eV) one of the major objectives in the field of CIGSe technology remains the development and implementation in the production line of Cd-free buffer layers. The CBDZn( S,O) remains one the most studied buffer layer for replacing the CdS in Cu(In,Ga)Se2-based solar cells and has already demonstrated its potential to lead to high-efficiency solar cells up to 22.3%. However one of the key issue to implement a CBD-Zn(S,O) process in a CIGSe production line is the cells stability, which depends both on the deposition conditions of CBD-Zn(S,O) and on a good band alignment between CIGSe/Zn(S,O)/windows layers. The most common window layers applied in CIGSe solar cells consist of two layers : a thin (50-100 nm) and highly resistive i-ZnO layer deposited by magnetron sputtering and a transparent conducting 300-500 nm ZnO:Al layer. In the case of CBD-Zn(S,O) buffer layer, the nature and deposition conditions of both Zn(S,O) and the undoped window layer can strongly influence the performance and stability of cells. The present contribution will be specially focused on the effect of condition growth of CBD-Zn(S,O) buffer layers and the impact of the composition and deposition conditions of the undoped window layers such as ZnxMgyO or ZnxSnyO on the stability and performance of these solar cells.

  1. Effects of AlN buffer layer thickness on the crystallinity and surface morphology of 10-µm-thick a-plane AlN films grown on r-plane sapphire substrates

    NASA Astrophysics Data System (ADS)

    Lin, Chia-Hung; Tamaki, Shinya; Yamashita, Yasuhiro; Miyake, Hideto; Hiramatsu, Kazumasa

    2016-08-01

    10-µm-thick a-plane AlN(11\\bar{2}0) films containing a low-temperature AlN (LT-AlN) buffer layer and a high-temperature AlN (HT-AlN) film were prepared on r-plane sapphire (1\\bar{1}02) substrates. The crystallinity of all the samples with different LT-AlN buffer layer thicknesses was improved after thermal annealing and HT-AlN growth, mainly owing to the elimination of domain boundaries and the concurrent suppression of facet formation. The optimum crystallinity of HT-AlN films was obtained with full widths at half maximum of the X-ray rocking curves of 660 arcsec for AlN(11\\bar{2}0)\\parallel [1\\bar{1}00]AlN and 840 arcsec for (0002) using a 200-nm-thick LT-AlN buffer layer.

  2. Preparation and crystalline qualities of SrTiO 3 and CeO 2 buffer layers fabricated on Ni substrates via a sol-gel method for YBCO coated conductors

    NASA Astrophysics Data System (ADS)

    Chen, S.; Sun, Z.; Shi, K.; Wang, S.; Meng, J.; Liu, Q.; Han, Z.

    2004-10-01

    High purity rolled Ni substrate was annealed at 1000 °C for 60 min to develop a cube texture with a full-width at half-maximum (FWHM) value of 5.26°. Strontium acetate, titanium (IV) butoxide, and inorganic cerium nitrite were used as the starting materials for fabrication of SrTiO 3 and CeO 2 buffer layers via a sol-gel method on the Ni substrate material. The results show that the heat treatment temperature and holding time affect both the surface morphology and the texture of the buffer layers. The SrTiO 3 and CeO 2 buffer layers grown on the Ni substrate show a sharp (2 0 0) orientation distribution. An intermediate layer was found between the SrTiO 3 layer and the Ni substrate. By optimizing the heat treatment parameters, the ω-scan FWHM values can reach 5.31° and 6.60° for the SrTiO 3 and CeO 2 buffer layers, respectively.

  3. Effect of various buffer-layer structures on the material quality and dislocation density of high composition Al/sub x/Ga/sub 1/. sqrt. /sub x/As laser material grown by metalorganic chemical vapor deposition

    SciTech Connect

    Givens, M.E.; Coleman, J.J.; Zmudzinski, C.A.; Bryan, R.P.; Emanuel, M.A.; Miller, L.M.

    1988-05-15

    The effect of various types of buffer layers on the generation and propagation of dislocations in epitaxial layers of high composition (x = 0.85) Al/sub x/Ga/sub 1/..sqrt../sub x/As grown by metalorganic chemical vapor deposition (MOCVD) on horizontal Bridgman (HB) and liquid-encapsulated Czochralski (LEC) substrates is examined. Bulk epilayers of high composition (x = 0.85) Al/sub x/Ga/sub 1/..sqrt../sub x/As and graded-barrier quantum-well laser structures with confining layers of the same composition were grown simultaneously on high-qualitylow etch-pit density (EPD) HB substrates and comparatively lower qualityhigh EPD LEC substrates with one of four types of compositionally graded andor superlattice buffer-layer structures. The bulk material was characterized by delineation and measurement of surface EPD and the observation of overall surface morphology. Data are also presented on the device characteristics of graded-barrier quantum-well laser diodes grown with these same buffer layers in order to determine the correlation between dislocation density and laser threshold current. The various buffer-layer structures were seen to be effective in reducing the defect density and improving the surface morphology of high composition epilayers grown on both HB and LEC substrates. The threshold-current density of the laser diodes, however, was independent of both the type of prelayer andor substrate utilized

  4. Growth of AlGaN on silicon substrates: a novel way to make back-illuminated ultraviolet photodetectors

    NASA Astrophysics Data System (ADS)

    McClintock, Ryan; Razeghi, Manijeh

    2015-08-01

    AlGaN, with its tunable wide-bandgap is a good choice for the realization of ultraviolet photodetectors. AlGaN films tend to be grown on foreign substrates such as sapphire, which is the most common choice for back-illuminated devices. However, even ultraviolet opaque substrates like silicon holds promise because, silicon can be removed by chemical treatment to allow back-illumination,1 and it is a very low-cost substrate which is available in large diameters up to 300 mm. However, Implementation of silicon as the solar-blind PD substrates requires overcoming the lattice-mismatch (17%) with the AlxGa1-xN that leads to high density of dislocation and crack-initiating stress. In this talk, we report the growth of thick crack-free AlGaN films on (111) silicon substrates through the use of a substrate patterning and mask-less selective area regrowth. This technique is critical as it decouples the epilayers and the substrate and allows for crack-free growth; however, the masking also helps to reduce the dislocation density by inclining the growth direction and encouraging dislocations to annihilate. A back-illuminated p-i-n PD structure is subsequently grown on this high quality template layer. After processing and hybridizing the device we use a chemical process to selectively remove the silicon substrate. This removal has minimal effect on the device, but it removes the UV-opaque silicon and allows back-illumination of the photodetector. We report our latest results of back-illuminated solar-blind photodetectors growth on silicon.

  5. Dual Band Deep Ultraviolet AlGaN Photodetectors

    NASA Technical Reports Server (NTRS)

    Aslam, S.; Miko, L.; Stahle, C.; Franz, D.; Pugel, D.; Guan, B.; Zhang, J. P.; Gaska, R.

    2007-01-01

    We report on the design, fabrication and characterization of a back-illuminated voltage bias selectable dual-band AlGaN UV photodetector. The photodetector can separate UVA and W-B band radiation by bias switching a two terminal n-p-n homojunction structure that is fabricated in the same pixel. When a forward bias is applied between the top and bottom electrodes, the detector can sense UV-A and reject W-B band radiation. Alternatively, under reverse bias, the photodetector can sense UV-B and reject UV-A band radiation.

  6. New sulphide precursors for Zn(O,S) buffer layers in Cu(In,Ga)Se2 solar cells for faster reaction kinetics

    NASA Astrophysics Data System (ADS)

    Löckinger, Johannes; Nishiwaki, Shiro; Fuchs, Peter; Buecheler, Stephan; Romanyuk, Yaroslav E.; Tiwari, Ayodhya N.

    2016-08-01

    The development of a novel chemistry for the chemical bath deposition of Zn(O,S) buffer layers for Cu(In,Ga)Se2 (CIGS) solar cells is desired for a higher growth rate, hence reduced deposition time, while reducing simultaneously the required concentration of reactants. State-of-the-art recipes are based on thiourea as sulphide precursor requiring a high molarity of reactants and relatively long deposition times due to the slow decomposition rate of thiourea. In this contribution thioamide based sulphide precursors were investigated for their decomposition and growth behaviour. A co-solvent approach in an ethanolic/aqueous ammonia medium was evaluated omitting the need for additional complexants. By replacing thiourea with the investigated thioamides, homogeneous dense layers of around 30 nm were grown with a greatly decreased deposition time of 8 min compared to 25 min for thiourea. Likewise, the concentration of the sulphide precursor was 40-fold reduced. The photovoltaic performance as characterized by external quantum efficiency and current–voltage measurements, showed conversion efficiencies of 15% comparable to the thiourea based process.

  7. Epitaxial growth of ZnO film on Si(1 1 1) with CeO2(1 1 1) as buffer layer

    NASA Astrophysics Data System (ADS)

    Wong, T. I.; Tan, H. R.; Sentosa, D.; Wong, L. M.; Wang, S. J.; Feng, Y. P.

    2012-10-01

    ZnO(0 0 2) epitaxial films have been successfully grown on Si(1 1 1) with CeO2 as a buffer layer by pulsed laser deposition. In spite of large lattice mismatch between ZnO and CeO2, good film quality was achieved, as proven by Fourier filtered high-resolution transmission electron microscopy (HRTEM) image, due to reduction in interface strain by domain matching epitaxy. The epitaxial relationship of ZnO and CeO2 on the Si substrate was determined to be (0 0 2)[2 1 0]ZnO‖(1 1 1)[1 1 2] _CeO_2\\Vert (1 1 1)[1 1 2]Si. The HRTEM images show low defect concentrations in both the deposited ZnO film and CeO2 layer. Ordered crack lines are observed on the surface of the ZnO film which are due to A-type and B-type stackings of CeO2 on Si(1 1 1). Sharp near-band edge emission at 3.253 eV was detected for the ZnO film through photoluminiscence measurement at room temperature.

  8. New sulphide precursors for Zn(O,S) buffer layers in Cu(In,Ga)Se2 solar cells for faster reaction kinetics

    NASA Astrophysics Data System (ADS)

    Löckinger, Johannes; Nishiwaki, Shiro; Fuchs, Peter; Buecheler, Stephan; Romanyuk, Yaroslav E.; Tiwari, Ayodhya N.

    2016-08-01

    The development of a novel chemistry for the chemical bath deposition of Zn(O,S) buffer layers for Cu(In,Ga)Se2 (CIGS) solar cells is desired for a higher growth rate, hence reduced deposition time, while reducing simultaneously the required concentration of reactants. State-of-the-art recipes are based on thiourea as sulphide precursor requiring a high molarity of reactants and relatively long deposition times due to the slow decomposition rate of thiourea. In this contribution thioamide based sulphide precursors were investigated for their decomposition and growth behaviour. A co-solvent approach in an ethanolic/aqueous ammonia medium was evaluated omitting the need for additional complexants. By replacing thiourea with the investigated thioamides, homogeneous dense layers of around 30 nm were grown with a greatly decreased deposition time of 8 min compared to 25 min for thiourea. Likewise, the concentration of the sulphide precursor was 40-fold reduced. The photovoltaic performance as characterized by external quantum efficiency and current-voltage measurements, showed conversion efficiencies of 15% comparable to the thiourea based process.

  9. CdS and Cd-Free Buffer Layers on Solution Phase Grown Cu2ZnSn(SxSe1- x)4 :Band Alignments and Electronic Structure Determined with Femtosecond Ultraviolet Photoemission Spectroscopy

    SciTech Connect

    Haight, Richard; Barkhouse, Aaron; Wang, Wei; Yu, Luo; Shao, Xiaoyan; Mitzi, David; Hiroi, Homare; Sugimoto, Hiroki

    2013-12-02

    The heterojunctions formed between solution phase grown Cu2ZnSn(SxSe1- x)4(CZTS,Se) and a number of important buffer materials including CdS, ZnS, ZnO, and In2S3, were studied using femtosecond ultraviolet photoemission spectroscopy (fs-UPS) and photovoltage spectroscopy. With this approach we extract the magnitude and direction of the CZTS,Se band bending, locate the Fermi level within the band gaps of absorber and buffer and measure the absorber/buffer band offsets under flatband conditions. We will also discuss two-color pump/probe experiments in which the band bending in the buffer layer can be independently determined. Finally, studies of the bare CZTS,Se surface will be discussed including our observation of mid-gap Fermi level pinning and its relation to Voc limitations and bulk defects.

  10. High-efficiency ferroelectric-film solar cells with an n-type Cu₂O cathode buffer layer.

    PubMed

    Cao, Dawei; Wang, Chunyan; Zheng, Fengang; Dong, Wen; Fang, Liang; Shen, Mingrong

    2012-06-13

    Because of the existence of interface Schottky barriers and depolarization electric field, ferroelectric films sandwiched between top and bottom electrodes are strongly expected to be used as a new kind of solar cells. However, the photocurrent with a typical order of μA/cm(2) is too low to be practical. Here we demonstrate that the insertion of an n-type cuprous oxide (Cu(2)O) layer between the Pb(Zr,Ti)O(3) (PZT) film and the cathode Pt contact in a ITO/PZT/Pt cell leads to the short-circuit photocurrent increasing 120-fold to 4.80 mA/cm(2) and power conversion efficiency increasing of 72-fold to 0.57% under AM1.5G (100 mW/cm(2)) illumination. Ultraviolet photoemission spectroscopy and dark J-V characteristic show an ohmic contact on Pt/Cu(2)O, an n(+)-n heterojunction on Cu(2)O/PZT and a Schottky barrier on PZT/ITO, which provide a favorable energy level alignment for efficient electron-extraction on the cathode. Our work opens up a promising new method that has the potential for fulfilling cost-effective ferroelectric-film photovoltaic. PMID:22582756

  11. AlGaN channel field effect transistors with graded heterostructure ohmic contacts

    NASA Astrophysics Data System (ADS)

    Bajaj, Sanyam; Akyol, Fatih; Krishnamoorthy, Sriram; Zhang, Yuewei; Rajan, Siddharth

    2016-09-01

    We report on ultra-wide bandgap (UWBG) Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistors (MISFETs) with heterostructure engineered low-resistance ohmic contacts. The low intrinsic electron affinity of AlN (0.6 eV) leads to large Schottky barriers at the metal-AlGaN interface, resulting in highly resistive ohmic contacts. In this work, we use a reverse compositional graded n++ AlGaN contact layer to achieve upward electron affinity grading, leading to a low specific contact resistance (ρsp) of 1.9 × 10-6 Ω cm2 to n-Al0.75Ga0.25N channels (bandgap ˜5.3 eV) with non-alloyed contacts. We also demonstrate UWBG Al0.75Ga0.25N channel MISFET device operation employing the compositional graded n++ ohmic contact layer and 20 nm atomic layer deposited Al2O3 as the gate-dielectric.

  12. Enhancement of optical polarization degree of AlGaN quantum wells by using staggered structure.

    PubMed

    Wang, Weiying; Lu, Huimin; Fu, Lei; He, Chenguang; Wang, Mingxing; Tang, Ning; Xu, Fujun; Yu, Tongjun; Ge, Weikun; Shen, Bo

    2016-08-01

    Staggered AlGaN quantum wells (QWs) are designed to enhance the transverse-electric (TE) polarized optical emission in deep ultraviolet (DUV) light- emitting diodes (LED). The optical polarization properties of the conventional and staggered AlGaN QWs are investigated by a theoretical model based on the k·p method as well as polarized photoluminescence (PL) measurements. Based on an analysis of the valence subbands and momentum matrix elements, it is found that AlGaN QWs with step-function-like Al content in QWs offers much stronger TE polarized emission in comparison to that from conventional AlGaN QWs. Experimental results show that the degree of the PL polarization at room temperature can be enhanced from 20.8% of conventional AlGaN QWs to 40.2% of staggered AlGaN QWs grown by MOCVD, which is in good agreement with the theoretical simulation. It suggests that polarization band engineering via staggered AlGaN QWs can be well applied in high efficiency AlGaN-based DUV LEDs. PMID:27505782

  13. Microstructure of a high Jc, laser-ablated YBa 2Cu 3O 7- δ/sol-gel deposited NdGaO 3 buffer layer/(001) SrTiO 3 multi-layer structure

    NASA Astrophysics Data System (ADS)

    Yang, Chau-Yun; Ichinose, Ataru; Babcock, S. E.; Morrell, J. S.; Mathis, J. E.; Verebelyi, D. T.; Paranthaman, M.; Beach, D. B.; Christen, D. K.

    A YBa 2Cu 3O 7- δ (YBCO) film with a transport critical current density ( Jc) value of 1 mA/cm 2 (77 K, 0 T) was grown on a solution deposited NdGaO 3 (NGO) buffer layer on (100) SrTiO 3 (STO). The 25-nm thick NGO buffer layer was dip-coated onto the STO single crystal from a solution of metal methoxyethoxides in 2-methoxyethanol. Pulsed laser deposition (PLD) was used to grow a 250-nm-thick YBCO film on the NGO. The epitaxial relationships are cube-on-cube throughout the structure when the pseudo cubic and pseudo tetragonal unit cells are used to describe the NGO and YBCO crystal structures, respectively: (001) YBCO∥(001) NGO∥(001) STO and [100] YBCO∥[100] NGO∥[100] STO. High resolution scanning electron microscopy (SEM) of the bare NGO surface revealed ∼40 nm diameter pinholes with number density of ∼2×10 13 m -2, corresponding to an area fraction coverage of 2.5%, in an otherwise featureless surface. Cross-sectional transmission electron microscopy (TEM) showed that these pinholes penetrate to the STO; otherwise the NGO layer was uniformly thick to within approximately ±5 nm and defect free. The X-ray diffraction φ- and ω-scans indicated that the YBCO film was highly oriented with a full-width-half maximum peak breadth of 1.14° for in-plane and 0.46° for out-of-plane alignment, respectively. The film contained sparse a-axis oriented grains, an appreciable density of (001) stacking faults and apparently insulating second phase precipitates of the type that typically litter the surface of PLD films. All of these defects are typical of YBCO thin films. High-resolution cross-sectional TEM images indicate that no chemical reaction occurs at the YBCO/NGO interface.

  14. Buffer Biology.

    ERIC Educational Resources Information Center

    Morgan, Kelly

    2000-01-01

    Presents a science experiment in which students test the buffering capacity of household products such as shampoo, hand lotion, fizzies candy, and cola. Lists the standards addressed in this experiment and gives an example of a student lab write-up. (YDS)

  15. An electrically injected AlGaN nanowire laser operating in the ultraviolet-C band

    SciTech Connect

    Zhao, S.; Liu, X.; Kang, J.; Mi, Z.; Woo, S. Y.; Botton, G. A.

    2015-07-27

    We have investigated the molecular beam epitaxial growth and characterization of nearly defect-free AlGaN nanowire heterostructures grown directly on Si substrate. By exploiting the Anderson localization of light, we have demonstrated electrically injected AlGaN nanowire lasers that can operate at 262.1 nm. The threshold current density is 200 A/cm{sup 2} at 77 K. The relatively low threshold current is attributed to the high Q-factor of the random cavity and the three-dimensional quantum confinement offered by the atomic-scale composition modulation in self-organized AlGaN nanowires.

  16. Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes

    SciTech Connect

    Mehnke, Frank Kuhn, Christian; Guttmann, Martin; Reich, Christoph; Kolbe, Tim; Rass, Jens; Wernicke, Tim; Kueller, Viola; Knauer, Arne; Lapeyrade, Mickael; Einfeldt, Sven; Weyers, Markus; Kneissl, Michael

    2014-08-04

    The design and Mg-doping profile of AlN/Al{sub 0.7}Ga{sub 0.3}N electron blocking heterostructures (EBH) for AlGaN multiple quantum well (MQW) light emitting diodes (LEDs) emitting below 250 nm was investigated. By inserting an AlN electron blocking layer (EBL) into the EBH, we were able to increase the quantum well emission power and significantly reduce long wavelength parasitic luminescence. Furthermore, electron leakage was suppressed by optimizing the thickness of the AlN EBL while still maintaining sufficient hole injection. Ultraviolet (UV)-C LEDs with very low parasitic luminescence (7% of total emission power) and external quantum efficiencies of 0.19% at 246 nm have been realized. This concept was applied to AlGaN MQW LEDs emitting between 235 nm and 263 nm with external quantum efficiencies ranging from 0.002% to 0.93%. After processing, we were able to demonstrate an UV-C LED emitting at 234 nm with 14.5 μW integrated optical output power and an external quantum efficiency of 0.012% at 18.2 A/cm{sup 2}.

  17. Effect of different thickness crystalline SiC buffer layers on the ordering of MgB{sub 2} films probed by extended x-ray absorption fine structure

    SciTech Connect

    Putri, W. B. K.; Tran, D. H.; Kang, B.; Lee, O. Y.; Kang, W. N.; Miyanaga, T.; Yang, D. S.

    2014-03-07

    Extended X-ray absorption fine structure (EXAFS) spectroscopy is a powerful method to investigate the local structure of thin films. Here, we have studied EXAFS of MgB{sub 2} films grown on SiC buffer layers. Crystalline SiC buffer layers with different thickness of 70, 100, and 130 nm were deposited on the Al{sub 2}O{sub 3} (0001) substrates by using a pulsed laser deposition method, and then MgB{sub 2} films were grown on the SiC buffer layer by using a hybrid physical-chemical vapor deposition technique. Transition temperature of MgB{sub 2} film decreased with increasing thickness of SiC buffer layer. However, the T{sub c} dropping went no farther than 100 nm-thick-SiC. This uncommon behavior of transition temperature is likely to be created from electron-phonon interaction in MgB{sub 2} films, which is believed to be related to the ordering of MgB{sub 2} atomic bonds, especially in the ordering of Mg–Mg bonds. Analysis from Mg K-edge EXAFS measurements showed interesting ordering behavior of MgB{sub 2} films. It is noticeable that the ordering of Mg–B bonds is found to decrease monotonically with the increase in SiC thickness of the MgB{sub 2} films, while the opposite happens with the ordering in Mg–Mg bonds. Based on these results, crystalline SiC buffer layers in MgB{sub 2} films seemingly have evident effects on the alteration of the local structure of the MgB{sub 2} film.

  18. Effect of ZnO buffer layer on the cathodoluminescence of ZnGa 2O 4/ZnO phosphor screen for FED

    NASA Astrophysics Data System (ADS)

    Yang, Su-Hua; Hsueh, Ting-Jen; Chang, Shoou-Jinn

    2006-01-01

    A ZnGa 2O 4/ZnO phosphor screen for FED was prepared by RF magnetron sputtering. The ZnO buffer layer has a reasonable resistivity of about 5.2×10 3 Ω cm and a high transparency larger than 85%. The ZnGa 2O 4 phosphor was polycrystalline on ITO, yet it was amorphous on ZnO. If the ZnGa 2O 4/ZnO phosphor screen was annealed at temperatures above 300 °C, then ZnGa 2O 4 was crystallized. Owing to the lattice mismatch between ZnGa 2O 4 and ZnO, the grain size of ZnGa 2O 4 on ZnO was small. As a result, the effective emission area and luminescence of the ZnGa 2O 4/ZnO phosphor screen were enhanced. Auger electron spectroscopy (AES) examination showed that atoms in ZnO did not diffuse into ZnGa 2O 4 film, and the ZnGa 2O 4 was Zn-deficient. For charge balance, oxygen vacancy defects in the phosphor film were formed to compensate Zn deficiencies; consequently, the probability for electrons transfer from 2E B to 4A 2 of Ga energy levels was improved and the luminescence of the phosphor was increased.

  19. Improving source/drain contact resistance of amorphous indium-gallium-zinc-oxide thin-film transistors using an n+-ZnO buffer layer

    NASA Astrophysics Data System (ADS)

    Hung, Chien-Hsiung; Wang, Shui-Jinn; Lin, Chieh; Wu, Chien-Hung; Chen, Yen-Han; Liu, Pang-Yi; Tu, Yung-Chun; Lin, Tseng-Hsing

    2016-06-01

    To avoid high temperature annealing in improving the source/drain (S/D) resistance (R DS) of amorphous indium-gallium-zinc-oxide (α-IGZO) thin-film transistors (TFTs) for flexible electronics, a simple and efficient technique using a sputtering-deposited n+-ZnO buffer layer (BL) sandwiched between the S/D electrode and the α-IGZO channel is proposed and demonstrated. It shows that the R DS of α-IGZO TFTs with the proposed n+-ZnO BL is reduced to 8.1 × 103 Ω as compared with 6.1 × 104 Ω of the conventional one. The facilitation of carrier tunneling between the S/D electrode and the α-IGZO channel through the use of the n+-ZnO BL to lower the effective barrier height therein is responsible for the R DS reduction. Effects of the chamber pressure on the carrier concentration of the sputtering-deposited n+-ZnO BL and the thickness of the BL on the degree of improvement in the performance of α-IGZO TFTs are analyzed and discussed.

  20. Improving source/drain contact resistance of amorphous indium–gallium–zinc-oxide thin-film transistors using an n+-ZnO buffer layer

    NASA Astrophysics Data System (ADS)

    Hung, Chien-Hsiung; Wang, Shui-Jinn; Lin, Chieh; Wu, Chien-Hung; Chen, Yen-Han; Liu, Pang-Yi; Tu, Yung-Chun; Lin, Tseng-Hsing

    2016-06-01

    To avoid high temperature annealing in improving the source/drain (S/D) resistance (R DS) of amorphous indium–gallium–zinc-oxide (α-IGZO) thin-film transistors (TFTs) for flexible electronics, a simple and efficient technique using a sputtering-deposited n+-ZnO buffer layer (BL) sandwiched between the S/D electrode and the α-IGZO channel is proposed and demonstrated. It shows that the R DS of α-IGZO TFTs with the proposed n+-ZnO BL is reduced to 8.1 × 103 Ω as compared with 6.1 × 104 Ω of the conventional one. The facilitation of carrier tunneling between the S/D electrode and the α-IGZO channel through the use of the n+-ZnO BL to lower the effective barrier height therein is responsible for the R DS reduction. Effects of the chamber pressure on the carrier concentration of the sputtering-deposited n+-ZnO BL and the thickness of the BL on the degree of improvement in the performance of α-IGZO TFTs are analyzed and discussed.

  1. Ambient CdCl{sub 2} treatment on CdS buffer layer for improved performance of Sb{sub 2}Se{sub 3} thin film photovoltaics

    SciTech Connect

    Wang, Liang; Luo, Miao; Qin, Sikai; Liu, Xinsheng; Chen, Jie; Yang, Bo; Leng, Meiying; Xue, Ding-Jiang; Zhou, Ying; Gao, Liang; Song, Haisheng; Tang, Jiang

    2015-10-05

    Antimony selenide (Sb{sub 2}Se{sub 3}) is appealing as a promising light absorber because of its intrinsically benign grain boundaries, suitable band gap (∼1.1 eV), strong absorption coefficient, and relatively environmentally friendly constituents. Recently, we achieved a certified 5.6% efficiency Sb{sub 2}Se{sub 3} thin film solar cell with the assistance of ambient CdCl{sub 2} treatment on the CdS buffer layer. Here, we focused on investigating the underlying mechanism from a combined materials and device physics perspective applying current density-voltage (J-V) fitting analysis, atomic force microscope, X-ray photoelectron spectroscopy, fluorescence, and UV–Vis transmission spectroscopy. Our results indicated that ambient CdCl{sub 2} treatment on CdS film not only improved CdS grain size and quality, but also incorporated Cl and more O into the film, both of which can significantly improve the heterojunction quality and device performance of CdS/Sb{sub 2}Se{sub 3} solar cells.

  2. Integration and structural analysis of strain relaxed bi-epitaxial zinc oxide(0001) thin film with silicon(100) using titanium nitride buffer layer

    SciTech Connect

    Gupta, Pranav; Narayan, Jagdish

    2014-01-28

    Epitaxial growth of c-plane ZnO(0001) has been demonstrated on the Si(001) by using TiN as an intermediate buffer layer. Because of different out of plane symmetry of the substrate (Si/TiN) and the film (ZnO), two orientations of ZnO domains were obtained and the ZnO film growth is of bi-epitaxial nature. The ZnO thin film was observed to be nearly strain relaxed from X-ray and Raman measurements. The interface between the ZnO and TiN was investigated by transmission electron microscopy, and atomic arrangement has been modeled to understand the crystallographic orientation and structure of the domain/grain boundaries. Reaction at ZnO/TiN interface at higher growth temperature causing zinc titanate formation was observed. The grain boundary structure between the observed domains investigated by scanning transmission electron microscopy, revealed the ZnO(0001) planes to be contiguous across the grain boundary which is significant from the perspective of conduction electron scattering. In this configuration, the TiN (being electrically conductive) can be effectively used as an electrode for novel vertically integrated device applications (like light emitting diodes) directly on Si(100) substrate.

  3. Large-roll growth of 25-inch hexagonal BN monolayer film for self-release buffer layer of free-standing GaN wafer

    PubMed Central

    Wu, Chenping; Soomro, Abdul Majid; Sun, Feipeng; Wang, Huachun; Huang, Youyang; Wu, Jiejun; Liu, Chuan; Yang, Xiaodong; Gao, Na; Chen, Xiaohong; Kang, Junyong; Cai, Duanjun

    2016-01-01

    Hexagonal boron nitride (h-BN) is known as promising 2D material with a wide band-gap (~6 eV). However, the growth size of h-BN film is strongly limited by the size of reaction chamber. Here, we demonstrate the large-roll synthesis of monolayer and controllable sub-monolayer h-BN film on wound Cu foil by low pressure chemical vapor deposition (LPCVD) method. By winding the Cu foil substrate into mainspring shape supported by a multi-prong quartz fork, the reactor size limit could be overcome by extending the substrate area to a continuous 2D curl of plane inward. An extremely large-size monolayer h-BN film has been achieved over 25 inches in a 1.2” tube. The optical band gap of h-BN monolayer was determined to be 6.0 eV. The h-BN film was uniformly transferred onto 2” GaN or 4” Si wafer surfaces as a release buffer layer. By HVPE method, overgrowth of thick GaN wafer over 200 μm has been achieved free of residual strain, which could provide high quality homo-epitaxial substrate. PMID:27756906

  4. The effects of ultra-thin cerium fluoride film as the anode buffer layer on the electrical characteristics of organic light emitting diodes

    NASA Astrophysics Data System (ADS)

    Lu, Hsin-Wei; Tsai, Cheng-Che; Hong, Cheng-Shong; Kao, Po-Ching; Juang, Yung-Der; Chu, Sheng-Yuan

    2016-11-01

    In this study, the efficiency of organic light-emitting diodes (OLEDs) was enhanced by depositing a CeF3film as an ultra-thin buffer layer between the indium tin oxide (ITO) electrode and α-naphthylphenylbiphenyldiamine (NPB) hole transport layer, with the structure configuration ITO/CeF3 (0.5, 1, and 1.5 nm)/α-naphthylphenylbiphenyl diamine (NPB) (40 nm)/tris(8-hydroxyquinoline) aluminum (Alq3) (60 nm)/lithium fluoride (LiF) (1 nm)/Al (150 nm). The enhancement mechanism was systematically investigated via several approaches. The X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy results revealed the formation of the UV-ozone treated CeF3 film. The work function increased from 4.8 eV (standard ITO electrode) to 5.22 eV (0.5-nm-thick UV-ozone treated CeF3 film deposited on the ITO electrode). The surface roughness of the UV-ozone treated CeF3 film was smoother than that of the standard ITO electrode. Further, the UV-ozone treated CeF3 film increased both the surface energy and polarity, as determined from contact angle measurements. In addition, admittance spectroscopy measurements showed an increased capacitance and conductance of the OLEDs. Accordingly, the turn-on voltage decreased from 4.2 V to 3.6 V at 1 mA/cm2, the luminance increased from 7588 cd/m2 to 24760 cd/m2, and the current efficiency increased from 3.2 cd/A to 3.8 cd/A when the 0.5-nm-thick UV-ozone treated CeF3 film was inserted into the OLEDs.

  5. A nitrilo-tri-acetic-acid/acetic acid route for the deposition of epitaxial cerium oxide films as high temperature superconductor buffer layers

    SciTech Connect

    Thuy, T.T.; Lommens, P.; Narayanan, V.; Van de Velde, N.; De Buysser, K.; Herman, G.G.; Cloet, V.; Van Driessche, I.

    2010-09-15

    A water based cerium oxide precursor solution using nitrilo-tri-acetic-acid (NTA) and acetic acid as complexing agents is described in detail. This precursor solution is used for the deposition of epitaxial CeO{sub 2} layers on Ni-5at%W substrates by dip-coating. The influence of the complexation behavior on the formation of transparent, homogeneous solutions and gels has been studied. It is found that ethylenediamine plays an important role in the gelification. The growth conditions for cerium oxide films were Ar-5% gas processing atmosphere, a solution concentration level of 0.25 M, a dwell time of 60 min at 900 {sup o}C and 5-30 min at 1050 {sup o}C. X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscopy (AFM), pole figures and spectroscopic ellipsometry were used to characterize the CeO{sub 2} films with different thicknesses. Attenuated total reflection-Fourier transform infrared (ATR-FTIR) was used to determine the carbon residue level in the surface of the cerium oxide film, which was found to be lower than 0.01%. Textured films with a thickness of 50 nm were obtained. - Graphical abstract: Study of the complexation and hydrolysis behavior of Ce{sup 4+} ions in the presence of nitrilo-tri-acetic acid and the subsequent development of an aqueous chemical solution deposition route suited for the processing of textured CeO{sub 2} buffer layers on Ni-W tapes.

  6. Trap states in AlGaN channel high-electron-mobility transistors

    SciTech Connect

    Zhao, ShengLei; Zhang, Kai; Ha, Wei; Chen, YongHe; Zhang, Peng; Zhang, JinCheng; Hao, Yue; Ma, XiaoHua

    2013-11-18

    Frequency dependent capacitance and conductance measurements were performed to analyze the trap states in the AlGaN channel high-electron-mobility transistors (HEMTs). The trap state density in the AlGaN channel HEMTs decreases from 1.26 × 10{sup 13} cm{sup −2}eV{sup −1} at the energy of 0.33 eV to 4.35 × 10{sup 11} cm{sup −2}eV{sup −1} at 0.40 eV. Compared with GaN channel HEMTs, the trap states in the AlGaN channel HEMTs have deeper energy levels. The trap with deeper energy levels in the AlGaN channel HEMTs is another reason for the reduction of the reverse gate leakage current besides the higher Schottky barrier height.

  7. Buffer layers for coated conductors

    DOEpatents

    Stan, Liliana; Jia, Quanxi; Foltyn, Stephen R.

    2011-08-23

    A composite structure is provided including a base substrate, an IBAD oriented material upon the base substrate, and a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material. Additionally, an article is provided including a base substrate, an IBAD oriented material upon the base substrate, a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material, and a thick film upon the cubic metal oxide material. Finally, a superconducting article is provided including a base substrate, an IBAD oriented material upon the base substrate, a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material, and an yttrium barium copper oxide material upon the cubic metal oxide material.

  8. Microstructural evaluation of Sb-adjusted Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} buffer layer systems for IR applications

    SciTech Connect

    Chen, E.; Paine, D.C.; Uppal, P.; Ahearn, J.S.; Nichols, K.; Charache, G.W.

    1998-06-01

    The authors report on a transmission electron microscopy (TEM) study of Sb-adjusted quaternary Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} buffer-layers grown on <001> GaAs substrates. A series of structures were grown by MBE at 470 C that utilize a multilayer grading scheme in which the Sb content of Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} buffer-layers grown on <001> GaAs substrates. A series of structures were grown by MBe at 470 C that utilize a multilayer grading scheme in which the Sb content of Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} is successively increased in a series of 125 nm thick layers. Post growth analysis using conventional bright field and weak beam dark field imaging of these buffer layers in cross-section reveals that the interface misfit dislocations are primarily of the 60{degree} type and are distributed through out the interfaces of the buffer layer. When optimized, the authors have shown, using plan view and cross-sectional TEM, that this approach can reduce the threading defect density to below the detectability limit of TEM (< 10{sup 5}/cm{sup 2}) and preserve growth surface planarity. The Sb-graded approach was used to fabricate two 2.2 {micro}m power converter structures fabricated using InGaAs grown on Sb-based buffer layers on GaAs substrates. A microstructural and electrical characterization was performed on these device structures and the results are contrasted with a sample in which InP was selected as the substrate. Microstructure, defect density and device performance in these not-yet-optimized Sb-based buffer layers compares favorably to equivalent devices fabricated using InP substrates.

  9. MOCVD growth of AlGaN UV LEDs

    SciTech Connect

    Han, J.; Crawford, M.H.

    1998-09-01

    Issues related to the MOCVD growth of AlGaN, specifically the gas-phase parasitic reactions among TMG, TMA, and NH{sub 3}, are studied using an in-situ optical reflectometer. It is observed that the presence of the well-known gas phase adduct (TMA: NH{sub 3}) could seriously hinder the incorporation behavior of TMGa. Relatively low reactor pressures (30--50 Torr) are employed to grow an AlGaN/GaN SCH QW p-n diode structure. The UV emission at 360 nm (FWHM {approximately} 10 nm) represents the first report of LED operation from an indium-free GaN QW diode.

  10. Reduced interface recombination in Cu{sub 2}ZnSnS{sub 4} solar cells with atomic layer deposition Zn{sub 1−x}Sn{sub x}O{sub y} buffer layers

    SciTech Connect

    Platzer-Björkman, C.; Frisk, C.; Larsen, J. K.; Ericson, T.; Li, S.-Y.; Scragg, J. J. S.; Keller, J.; Larsson, F.; Törndahl, T.

    2015-12-14

    Cu{sub 2}ZnSnS{sub 4} (CZTS) solar cells typically include a CdS buffer layer in between the CZTS and ZnO front contact. For sulfide CZTS, with a bandgap around 1.5 eV, the band alignment between CZTS and CdS is not ideal (“cliff-like”), which enhances interface recombination. In this work, we show how a Zn{sub 1−x}Sn{sub x}O{sub y} (ZTO) buffer layer can replace CdS, resulting in improved open circuit voltages (V{sub oc}) for CZTS devices. The ZTO is deposited by atomic layer deposition (ALD), with a process previously developed for Cu(In,Ga)Se{sub 2} solar cells. By varying the ALD process temperature, the position of the conduction band minimum of the ZTO is varied in relation to that of CZTS. A ZTO process at 95 °C is found to give higher V{sub oc} and efficiency as compared with the CdS reference devices. For a ZTO process at 120 °C, where the conduction band alignment is expected to be the same as for CdS, the V{sub oc} and efficiency is similar to the CdS reference. Further increase in conduction band minimum by lowering the deposition temperature to 80 °C shows blocking of forward current and reduced fill factor, consistent with barrier formation at the junction. Temperature-dependent current voltage analysis gives an activation energy for recombination of 1.36 eV for the best ZTO device compared with 0.98 eV for CdS. We argue that the V{sub oc} of the best ZTO devices is limited by bulk recombination, in agreement with a room temperature photoluminescence peak at around 1.3 eV for both devices, while the CdS device is limited by interface recombination.

  11. Aspects of the SrO-CuO-TiO2 Ternary System Related to the Deposition of SrTiO3 and Copper-Doped SrTiO3 Thin-Film Buffer Layers

    SciTech Connect

    A. Ayala

    2004-12-20

    YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} (YBCO) coated conductors are promising materials for large-scale superconductivity applications. One version of a YBCO coated conductor is based on ion beam assisted deposition (IBAD) of magnesium oxide (MgO) onto polycrystalline metal substrates. SrTiO{sub 3} (STO) is often deposited by physical vapor deposition (PVD) methods as a buffer layer between the YBCO and IBAD MgO due to its chemical stability and lattice mismatch of only {approx}1.5% with YBCO. In this work, some aspects of the stability of STO with respect to copper (Cu) and chemical solution deposition of STO on IBAD MgO templates were examined. Solubility limits of Cu in STO were established by processing Cu-doped STO powders by conventional bulk preparation techniques. The maximum solubility of Cu in STO was {approx}1% as determined by transmission electron microscopy (TEM) and Rietveld refinements of x-ray diffraction (XRD) data. XRD analysis, performed in collaboration with NIST, on powder compositions on the STO/SrCuO{sub 2} tie line did not identify any ternary phases. SrCu{sub 0.10}Ti{sub 0.90}O{sub y} buffer layers were prepared by pulsed laser deposition (PLD) and CSD on IBAD MgO flexible metallic textured tapes. TEM analysis of a {approx}100 nm thick SrCu{sub 0.10}Ti{sub 0.90}O{sub y} buffer layer deposited by PLD showed a smooth Cu-doped STO/MgO interface. A {approx}600 nm thick YBCO film, deposited onto the SrCu{sub 0.10}Ti{sub 0.90}O{sub y} buffer by PLD, exhibited a T{sub c} of 87 K and critical current density (J{sub c}) of {approx}1 MA/cm{sup 2}. STO and Cu-doped STO thin films by CSD were {approx}30 nm thick. The in plane alignment (FWHM) after deposition of the STO improved by {approx}1{sup o} while it degraded by {approx}2{sup o} with the SrCu{sub 0.05}TiO{sub y} buffer. YBCO was deposited by PLD on the STO and SrCu{sub 0.05}TiO{sub y} buffers. The in plane alignment (FWHM) of the YBCO with the STO buffer layer slightly improved while that of the

  12. Effect of conductive TiN buffer layer on the growth of stoichiometric VO{sub 2} films and the out-of-plane insulator–metal transition properties

    SciTech Connect

    Mian, Md. Suruz; Okimura, Kunio

    2014-07-15

    A TiN buffer film is used with a conductive interfacial layer for stoichiometric vanadium dioxide (VO{sub 2}) film growth, creating a layered device with a VO{sub 2} insulator–metal transition. Low-temperature growth (<250 °C) of the VO{sub 2} film on a Ti layer on a Si substrate is achieved using inductively coupled plasma-assisted sputtering. It is found that Ti diffusion and oxidation degrades the VO{sub 2} film quality at higher temperatures, but the introduction of a TiN buffer layer suppresses the degradation and enables growth of a stoichiometric VO{sub 2} film even at 400 °C. The high resistance of the VO{sub 2} film grown on the TiN layer suggests the benefit of using the intrinsic insulator–metal transition of VO{sub 2}. The voltage-triggered switching properties of the layered devices are examined, and the cause of the high out-of-plane resistance in this layered structure is discussed based upon the dependence of the initial resistance as a function the electrode area.

  13. A comparative study of the annealing behavior of Cu(In,Ga)(S,Se){sub 2} based solar cells with an indium sulfide buffer layer, partly submitted to wet chemical treatments

    SciTech Connect

    Hönes, C.; Hackenberg, J.; Zweigart, S.; Wachau, A.; Hergert, F.; Siebentritt, S.

    2015-03-07

    Indium sulfide thin films deposited via thermal evaporation from compound source material have been successfully utilized as a cadmium free buffer layer for Cu(In,Ga)Se{sub 2} based solar cells. However, high efficiencies are only reached after an additional annealing step. In this work, the annealing behavior of Cu(In,Ga)(S,Se){sub 2} based indium sulfide buffered solar cells is compared to the annealing behavior of similar cells, which were submitted to wet chemical treatments partly containing cadmium ions. Upon annealing a significant improvement of the initial solar cell characteristics is observed for the untreated cell and is related to the increase of activation energy for the carrier recombination process and a decrease of the ideality factor within the one diode model. It is shown here that this improvement can also be achieved by wet treatments of the absorber prior to buffer layer deposition. Upon annealing these treated cells still gain in collection length but lose open circuit voltage, which is explained here within a model including a highly p-doped absorber surface layer and supported by simulations showing that a decrease in doping density of such a surface layer would lead to the observed effects.

  14. First principles calculations of point defect diffusion in CdS buffer layers: Implications for Cu(In,Ga)(Se,S)2 and Cu2ZnSn(Se,S)4-based thin-film photovoltaics

    NASA Astrophysics Data System (ADS)

    Varley, J. B.; Lordi, V.; He, X.; Rockett, A.

    2016-01-01

    We investigate point defects in CdS buffer layers that may arise from intermixing with Cu(In,Ga)Se2 (CIGSe) or Cu2ZnSn(S,Se)4 (CZTSSe) absorber layers in thin-film photovoltaics (PV). Using hybrid functional calculations, we characterize the migration barriers of Cu, In, Ga, Se, Sn, Zn, Na, and K impurities and assess the activation energies necessary for their diffusion into the bulk of the buffer. We find that Cu, In, and Ga are the most mobile defects in CIGS-derived impurities, with diffusion expected to proceed into the buffer via interstitial-hopping and cadmium vacancy-assisted mechanisms at temperatures ˜400 °C. Cu is predicted to strongly favor migration paths within the basal plane of the wurtzite CdS lattice, which may facilitate defect clustering and ultimately the formation of Cu-rich interfacial phases as observed by energy dispersive x-ray spectroscopic elemental maps in real PV devices. Se, Zn, and Sn defects are found to exhibit much larger activation energies and are not expected to diffuse within the CdS bulk at temperatures compatible with typical PV processing temperatures. Lastly, we find that Na interstitials are expected to exhibit slightly lower activation energies than K interstitials despite having a larger migration barrier. Still, we find both alkali species are expected to diffuse via an interstitially mediated mechanism at slightly higher temperatures than enable In, Ga, and Cu diffusion in the bulk. Our results indicate that processing temperatures in excess of ˜400 °C will lead to more interfacial intermixing with CdS buffer layers in CIGSe devices, and less so for CZTSSe absorbers where only Cu is expected to significantly diffuse into the buffer.

  15. Molecular beam epitaxy growth of Al-rich AlGaN nanowires for deep ultraviolet optoelectronics

    NASA Astrophysics Data System (ADS)

    Zhao, S.; Woo, S. Y.; Sadaf, S. M.; Wu, Y.; Pofelski, A.; Laleyan, D. A.; Rashid, R. T.; Wang, Y.; Botton, G. A.; Mi, Z.

    2016-08-01

    Self-organized AlGaN nanowires by molecular beam epitaxy have attracted significant attention for deep ultraviolet optoelectronics. However, due to the strong compositional modulations under conventional nitrogen rich growth conditions, emission wavelengths less than 250 nm have remained inaccessible. Here we show that Al-rich AlGaN nanowires with much improved compositional uniformity can be achieved in a new growth paradigm, wherein a precise control on the optical bandgap of ternary AlGaN nanowires can be achieved by varying the substrate temperature. AlGaN nanowire LEDs, with emission wavelengths spanning from 236 to 280 nm, are also demonstrated.

  16. AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics

    SciTech Connect

    Hodges, C. Anaya Calvo, J.; Kuball, M.; Stoffels, S.; Marcon, D.

    2013-11-11

    AlGaN/GaN heterostructure field effect transistors with a 150 nm thick GaN channel within stacked Al{sub x}Ga{sub 1−x}N layers were investigated using Raman thermography. By fitting a thermal simulation to the measured temperatures, the thermal conductivity of the GaN channel was determined to be 60 W m{sup −1} K{sup −1}, over 50% less than typical GaN epilayers, causing an increased peak channel temperature. This agrees with a nanoscale model. A low thermal conductivity AlGaN buffer means the GaN spreads heat; its properties are important for device thermal characteristics. When designing power devices with thin GaN layers, as well as electrical considerations, the reduced channel thermal conductivity must be considered.

  17. Measurement and simulation of top- and bottom-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors with high external quantum efficiencies

    SciTech Connect

    Brendel, Moritz Helbling, Markus; Knigge, Andrea; Brunner, Frank; Weyers, Markus

    2015-12-28

    A comprehensive study on top- and bottom-illuminated Al{sub 0.5}Ga{sub 0.5}N/AlN metal-semiconductor-metal (MSM) photodetectors having different AlGaN absorber layer thickness is presented. The measured external quantum efficiency (EQE) shows pronounced threshold and saturation behavior as a function of applied bias voltage up to 50 V reaching about 50% for 0.1 μm and 67% for 0.5 μm thick absorber layers under bottom illumination. All experimental findings are in very good accordance with two-dimensional drift-diffusion modeling results. By taking into account macroscopic polarization effects in the hexagonal metal-polar +c-plane AlGaN/AlN heterostructures, new insights into the general device functionality of AlGaN-based MSM photodetectors are obtained. The observed threshold/saturation behavior is caused by a bias-dependent extraction of photoexcited holes from the Al{sub 0.5}Ga{sub 0.5}N/AlN interface. While present under bottom illumination for any AlGaN layer thickness, under top illumination this mechanism influences the EQE-bias characteristics only for thin layers.

  18. Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers

    NASA Astrophysics Data System (ADS)

    Podlipskas, Ž.; Aleksiejūnas, R.; Kadys, A.; Mickevičius, J.; Jurkevičius, J.; Tamulaitis, G.; Shur, M.; Shatalov, M.; Yang, J.; Gaska, R.

    2016-04-01

    Dynamics of radiative and nonradiative recombination of non-equilibrium carriers is investigated in thick AlGaN epitaxial layers with Al content ranging from 0.11 to 0.71. The internal quantum efficiency (IQE) in the epilayers was obtained using two approaches: either estimated from PL measurements or calculated using the recombination coefficients of a simple ABC model, retrieved by fitting the kinetics of light induced transient gratings (LITG). At photoexcited carrier densities below ~1019 cm-3, both approaches provided similar IQE values indicating that the simple ABC model is applicable to analyze carrier recombination at such carrier densities. The increase in IQE at higher carrier densities slowed down for the values extracted from PL considerably faster than for those obtained from LITG transients. This discrepancy is explained in terms of the mixed nature of the rate coefficient B caused by the onset of the density-activated nonradiative recombination at high carrier densities.

  19. Catalytic activity of enzymes immobilized on AlGaN /GaN solution gate field-effect transistors

    NASA Astrophysics Data System (ADS)

    Baur, B.; Howgate, J.; von Ribbeck, H.-G.; Gawlina, Y.; Bandalo, V.; Steinhoff, G.; Stutzmann, M.; Eickhoff, M.

    2006-10-01

    Enzyme-modified field-effect transistors (EnFETs) were prepared by immobilization of penicillinase on AlGaN /GaN solution gate field-effect transistors. The influence of the immobilization process on enzyme functionality was analyzed by comparing covalent immobilization and physisorption. Covalent immobilization by Schiff base formation on GaN surfaces modified with an aminopropyltriethoxysilane monolayer exhibits high reproducibility with respect to the enzyme/substrate affinity. Reductive amination of the Schiff base bonds to secondary amines significantly increases the stability of the enzyme layer. Electronic characterization of the EnFET response to penicillin G indicates that covalent immobilization leads to the formation of an enzyme (sub)monolayer.

  20. Effect of double-sided CaTiO3 buffer layers on the electrical properties of CaCu3Ti4O12 films on Pt /Ti/SiO2/Si substrates

    NASA Astrophysics Data System (ADS)

    Fang, Liang; Shen, Mingrong; Li, Zhenya

    2006-11-01

    The CaCu3Ti4O12 (CCTO) films with single- and double-sided CaTiO3 (CTO) buffer layers were grown on Pt /Ti/SiO2/Si substrates by pulsed laser deposition at 650°C, which was lower than the normal deposition temperature of the CCTO films. The CTO layer was used as seeding layer to improve the crystallization of the CCTO films and could enhance the dielectric properties of the multilayered films. In addition, the multilayered films exhibited low frequency dielectric relaxation and reduced leakage current density, which could be ascribed to the improved interfacial characteristics between the CTO layer and the electrode. The conduction mechanisms of the single layered and multilayered films were also discussed briefly.

  1. 1,3,5-Tris(phenyl-2-benzimidazole)-benzene cathode buffer layer thickness dependence in solution-processable organic solar cell based on 1,4,8,11,15,18,22,25-octahexylphthalocyanine

    NASA Astrophysics Data System (ADS)

    De Roméo Banoukepa, Gilles; Fujii, Akihiko; Shimizu, Yo; Ozaki, Masanori

    2015-04-01

    Studies on the insertion effects of a cathode buffer layer on bulk heterojunction organic solar cell based on 1,4,8,11,15,18,22,25-octahexylphthalocyanine (C6PcH2) and 1-(3-methoxy-carbonyl)-propyl-1-1-phenyl-(6,6)C61 (PCBM) by using 1,3,5-tris(phenyl-2-benzimidazole)-benzene (TPBi) as a cathode buffer layer material have been carried out. The external quantum efficiency and the short-circuit current markedly increased, resulting in the enhancement of the power conversion efficiency. The solar cell performance has been discussed from the atomic force microscopy, photoelectron yield spectroscopy and X-ray photoelectron spectroscopy measurements.

  2. 2D SWIR image sensor with extended wavelength cutoff of 2.5 μm on InP/InGaAs epitaxial wafers with graded buffer layers

    NASA Astrophysics Data System (ADS)

    Mushini, Prabhu; Huang, Wei; Morales, Manuel; Brubaker, Robert; Nguyen, Thuc-Uyen; Dobies, Matt; Zhang, Wei; Gustus, William; Mathews, Gary; Endicter, Scott; Paik, Namwoong

    2016-05-01

    Two-dimensional photo detector arrays with a cutoff wavelength of 2.5 μm were fabricated on InP/InGaAs epitaxial wafers with graded buffer layers in a 320x256 geometry on a 12.5μm pitch. Novel growth and fabrication techniques were employed to fabricate these arrays and optimize the performance. The dark current of the detector was investigated for a wide range of temperatures. The fabricated detector array was mated with a ROIC and packaged with a multi-stage TEC and investigated further at the FPA level. The effect of the graded buffer layers on the sensor performance was investigated and the results were compared to other methods used to develop and fabricate 2D image sensors on extended wavelength materials.

  3. Kinetic buffers.

    PubMed

    Alibrandi, Giuseppe; Fabbrizzi, Luigi; Licchelli, Maurizio; Puglisi, Antonio

    2015-01-12

    This paper proposes a new type of molecular device that is able to act as an inverse proton sponge to slowly decrease the pH inside a reaction vessel. This makes the automatic monitoring of the concentration of pH-sensitive systems possible. The device is a composite formed of an alkyl chloride, which kinetically produces acidity, and a buffer that thermodynamically modulates the variation in pH value. Profiles of pH versus time (pH-t plots) have been generated under various experimental conditions by computer simulation, and the device has been tested by carrying out automatic spectrophotometric titrations, without using an autoburette. To underline the wide variety of possible applications, this new system has been used to realize and monitor HCl uptake by a di-copper(II) bistren complex in a single run, in a completely automatic experiment.

  4. Effect of Capping on Electrical and Optical Properties of GaN Layers Grown by HVPE

    NASA Astrophysics Data System (ADS)

    Reshchikov, M. A.; Usikov, A.; Helava, H.; Makarov, Yu.; Puzyk, M. V.; Papchenko, B. P.

    2016-04-01

    Gallium nitride, grown by hydride vapor phase epitaxy and capped with a thin AlGaN layer, was studied by photoluminescence (PL) methods. The concentration of free electrons in GaN was found from the time-resolved PL data, and the concentrations of point defects were estimated from the steady-state PL measurements. The intensity of PL from GaN decreases moderately after capping it with Si-doped AlGaN, and it decreases dramatically after capping with Mg-doped AlGaN. At the same time, the concentration of free electrons and the concentrations of main radiative defects in GaN are not affected by the AlGaN capping. We demonstrate that PL is a powerful tool for nondestructive characterization of semiconductor layers buried under overlying device structures.

  5. A statistical approach for optimizing parameters for electrodeposition of indium (III) sulfide (In2S3) films, potential low-hazard buffer layers for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Mughal, Maqsood Ali

    Clean and environmentally friendly technologies are centralizing industry focus towards obtaining long term solutions to many large-scale problems such as energy demand, pollution, and environmental safety. Thin film solar cell (TFSC) technology has emerged as an impressive photovoltaic (PV) technology to create clean energy from fast production lines with capabilities to reduce material usage and energy required to manufacture large area panels, hence, lowering the costs. Today, cost ($/kWh) and toxicity are the primary challenges for all PV technologies. In that respect, electrodeposited indium sulfide (In2S3) films are proposed as an alternate to hazardous cadmium sulfide (CdS) films, commonly used as buffer layers in solar cells. This dissertation focuses upon the optimization of electrodeposition parameters to synthesize In2S3 films of PV quality. The work describe herein has the potential to reduce the hazardous impact of cadmium (Cd) upon the environment, while reducing the manufacturing cost of TFSCs through efficient utilization of materials. Optimization was performed through use of a statistical approach to study the effect of varying electrodeposition parameters upon the properties of the films. A robust design method referred-to as the "Taguchi Method" helped in engineering the properties of the films, and improved the PV characteristics including optical bandgap, absorption coefficient, stoichiometry, morphology, crystalline structure, thickness, etc. Current density (also a function of deposition voltage) had the most significant impact upon the stoichiometry and morphology of In2S3 films, whereas, deposition temperature and composition of the solution had the least significant impact. The dissertation discusses the film growth mechanism and provides understanding of the regions of low quality (for example, cracks) in films. In2S3 films were systematically and quantitatively investigated by varying electrodeposition parameters including bath

  6. Preparation and properties of highly (100)-oriented Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3} thin film prepared by rf magnetron sputtering with a PbO{sub x} buffer layer

    SciTech Connect

    Wu, Jiagang; Zhu, Jiliang; Xiao, Dingquan; Zhu, Jianguo; Tan, Junzhe; Zhang, Qinglei

    2007-05-01

    A method for fabrication of highly (100)-oriented Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3} (PZT) thin films by rf magnetron sputtering with a special buffer of PbO{sub x} (RFMS-SBP) was developed. With this method, highly (100)-oriented Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3} thin films were prepared on the PbO{sub x}/Pt(111)/Ti/SiO{sub 2}/Si(100) substrates, and the preferential (100) orientation of the Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3} film is 92%. The (100) orientation of the PbO{sub x} buffer layer leads to the (100) orientation of the PZT thin films, and the thickness of the buffer layer plays a significant role on the phase purity and electrical properties of the films. Highly (100)-oriented Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3} thin films with proper thickness of PbO{sub x} buffer layer possess good electrical properties with larger remnant polarization P{sub r} (69.7 {mu}C/cm{sup 2}), lower coercive field E{sub c} (92.4 kV/cm), and good pyroelectric coefficient at room temperature (2.6x10{sup -8} C/cm{sup 2} K). The butterfly-shaped {epsilon}-E characteristic curve gives the evidence of the improved in-plane ferroelectric property in the films.

  7. Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors

    SciTech Connect

    Corrion, A. L.; Poblenz, C.; Wu, F.; Speck, J. S.

    2008-05-01

    The impact of growth conditions on the surface morphology and structural properties of ammonia molecular beam epitaxy GaN buffers layers on SiC substrates was investigated. The threading dislocation (TD) density was found to decrease with decreasing NH{sub 3}:Ga flux ratio, which corresponded to an increase in surface roughness and reduction in residual compressive lattice mismatch stress. Furthermore, the dislocation density and compressive stress decreased for increasing buffer thickness. TD inclination was proposed to account for these observations. Optimized surface morphologies were realized at high NH{sub 3}:Ga flux ratios and were characterized by monolayer-high steps, spiral hillocks, and pyramidal mounds, with rms roughness of {approx}1.0 nm over 2x2 {mu}m{sup 2} atomic force microscopy images. Smooth surface morphologies were realized over a large range of growth temperatures and fluxes, and growth rates of up to 1 {mu}m/h were achieved. TD densities in the buffers as low as 3x10{sup 9} cm{sup -2} were demonstrated. These buffers were highly insulating and were used in recently reported AlGaN/GaN HEMTs with power densities of >11 W/mm at 4 and 10 GHz.

  8. Behavior of Photocarriers in the Light-Induced Metastable State in the p-n Heterojunction of a Cu(In,Ga)Se2 Solar Cell with CBD-ZnS Buffer Layer.

    PubMed

    Lee, Woo-Jung; Yu, Hye-Jung; Wi, Jae-Hyung; Cho, Dae-Hyung; Han, Won Seok; Yoo, Jisu; Yi, Yeonjin; Song, Jung-Hoon; Chung, Yong-Duck

    2016-08-31

    We fabricated Cu(In,Ga)Se2 (CIGS) solar cells with a chemical bath deposition (CBD)-ZnS buffer layer grown with varying ammonia concentrations in aqueous solution. The solar cell performance was degraded with increasing ammonia concentration, due to actively dissolved Zn atoms during CBD-ZnS precipitation. These formed interfacial defect states, such as hydroxide species in the CBD-ZnS film, and interstitial and antisite Zn defects at the p-n heterojunction. After light/UV soaking, the CIGS solar cell performance drastically improved, with a rise in fill factor. With the Zn-based buffer layer, the light soaking treatment containing blue photons induced a metastable state and enhanced the CIGS solar cell performance. To interpret this effect, we suggest a band structure model of the p-n heterojunction to explain the flow of photocarriers under white light at the initial state, and then after light/UV soaking. The determining factor is a p+ defect layer, containing an amount of deep acceptor traps, located near the CIGS surface. The p+ defect layer easily captures photoexcited electrons, and then when it becomes quasi-neutral, attracts photoexcited holes. This alters the barrier height and controls the photocurrent at the p-n junction, and fill factor values, determining the solar cell performance. PMID:27494649

  9. Behavior of Photocarriers in the Light-Induced Metastable State in the p-n Heterojunction of a Cu(In,Ga)Se2 Solar Cell with CBD-ZnS Buffer Layer.

    PubMed

    Lee, Woo-Jung; Yu, Hye-Jung; Wi, Jae-Hyung; Cho, Dae-Hyung; Han, Won Seok; Yoo, Jisu; Yi, Yeonjin; Song, Jung-Hoon; Chung, Yong-Duck

    2016-08-31

    We fabricated Cu(In,Ga)Se2 (CIGS) solar cells with a chemical bath deposition (CBD)-ZnS buffer layer grown with varying ammonia concentrations in aqueous solution. The solar cell performance was degraded with increasing ammonia concentration, due to actively dissolved Zn atoms during CBD-ZnS precipitation. These formed interfacial defect states, such as hydroxide species in the CBD-ZnS film, and interstitial and antisite Zn defects at the p-n heterojunction. After light/UV soaking, the CIGS solar cell performance drastically improved, with a rise in fill factor. With the Zn-based buffer layer, the light soaking treatment containing blue photons induced a metastable state and enhanced the CIGS solar cell performance. To interpret this effect, we suggest a band structure model of the p-n heterojunction to explain the flow of photocarriers under white light at the initial state, and then after light/UV soaking. The determining factor is a p+ defect layer, containing an amount of deep acceptor traps, located near the CIGS surface. The p+ defect layer easily captures photoexcited electrons, and then when it becomes quasi-neutral, attracts photoexcited holes. This alters the barrier height and controls the photocurrent at the p-n junction, and fill factor values, determining the solar cell performance.

  10. An analysis of temperature dependent piezoelectric Franz-Keldysh effect in AlGaN

    NASA Astrophysics Data System (ADS)

    Hou, Y. T.; Teo, K. L.; Li, M. F.; Uchida, Kazuo; Tokunaga, Hiroki; Akutsu, Nakao; Matsumoto, Koh

    2000-02-01

    Strong Franz-Keldysh oscillations near the band gap of AlGaN are observed in the contactless electroreflectance (CER) studies of a GaN/InGaN/AlGaN multilayer structure. The line shape analysis of the CER spectra at different temperatures provides an accurate determination of the AlGaN band gap energies and the built-in electric fields. Using the existing data of the thermal expansion coefficients of GaN and sapphire, and the piezoelectric constants of AlGaN, the temperature dependence of the electric field is estimated and is in good agreement with the experimental results between 15 and 300 K. We attribute such electric field to the piezoelectric strain effect.

  11. The effects of ultraviolet-ozone-treated ultra-thin MnO-doped ZnO film as anode buffer layer on the electrical characteristics of organic light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Lu, Hsin-Wei; Kao, Po-Ching; Juang, Yung-Der; Chu, Sheng-Yuan

    2015-11-01

    In this study, the efficiency of organic light-emitting diodes (OLEDs) was enhanced by depositing an MnO-doped ZnO film as a buffer layer between the indium tin oxide (ITO) electrode and the α-naphthylphenylbiphenyldiamine hole transport layer. The enhancement mechanism was systematically investigated, and the X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy results revealed the formation of the UV-ozone-treated MnO-doped ZnO film. With this film, the work function increased from 4.8 eV (standard ITO electrode (˜ 10 ±5 Ω/◻ )) to 5.27 eV (UV-ozone-treated MnO-doped ZnO deposited on the ITO electrode with 1 wt. % for 1 nm), while the surface roughness of the UV-ozone-treated MnO-doped ZnO film was smoother than that of the ITO electrode. The deposited UV-ozone-treated MnO-doped ZnO film increased the surface energy and polarity of the ITO surface, as determined from contact angle measurements. Further, results from admittance spectroscopy showed that the inserted UV-ozone-treated MnO-doped ZnO film increased the capacitance and conductance of the OLEDs. It was also found that the carrier injection increased in the space-charge region when the UV-ozone-treated MnO-doped ZnO buffer layer was inserted. Moreover, the turn-on voltage of the devices decreased from 3.8 V to 3.2 V, the luminance increased from 7588 cd/m2 to 20 350 cd/m2, and the current efficiency increased from 3.2 cd/A to 5.8 cd/A when a 1 nm-thick UV-ozone-treated MnO-doped ZnO film with 1 wt. % was inserted as a buffer layer in the OLEDs.

  12. Dependence of Device Characteristics of Bulk-Heterojunction Organic Thin-Film Solar Cells on Concentration of Glycerol and Sorbitol Addition in Pedot:. PSS Solutions for Fabricating Buffer Layers

    NASA Astrophysics Data System (ADS)

    Yamaki, Yusuke; Marumoto, Kazuhiro; Fujimori, Takuya; Mori, Tatsuo

    We have investigated the dependence of device characteristics of bulk-heterojunction organic thin-film solar cells on the concentration of glycerol and sorbitol addition in poly(3,4-ethylenedioxy thiophene):poly(4-styrene sulfonate) (PEDOT:PSS) solutions for fabricating buffer layers. The device structure is ITO/buffer/regioregular poly(3-hexylthiophene) (P3HT):[6,6]-phenyl C61-butyric acid methylester (PCBM)/Al. Glycerol addition is effective for increasing power conversion efficiency (PCE) from 1.25 to 1.41% because of the increase in short-circuit current density (Jsc) without decreasing open-circuit voltage (Voc). On the other hand, sorbitol addition decreases PCE from 1.25 to 1.04%, owing to the decrease in Voc. This difference in Voc behavior is ascribed to different work function of PEDOT:PSS with glycerol and sorbitol treatment.

  13. AlGaN Channel Transistors for Power Management and Distribution

    NASA Technical Reports Server (NTRS)

    VanHove, James M.

    1996-01-01

    Contained within is the Final report of a Phase 1 SBIR program to develop AlGaN channel junction field effect transistors (JFET). The report summarizes our work to design, deposit, and fabricate JFETS using molecular beam epitaxy growth AlGaN. Nitride growth is described using a RF atomic nitrogen plasma source. Processing steps needed to fabricate the device such as ohmic source-drain contacts, reactive ion etching, gate formation, and air bride fabrication are documented. SEM photographs of fabricated power FETS are shown. Recommendations are made to continue the effort in a Phase 2 Program.

  14. Large-Format AlGaN PIN Photodiode Arrays for UV Images

    NASA Technical Reports Server (NTRS)

    Aslam, Shahid; Franz, David

    2010-01-01

    A large-format hybridized AlGaN photodiode array with an adjustable bandwidth features stray-light control, ultralow dark-current noise to reduce cooling requirements, and much higher radiation tolerance than previous technologies. This technology reduces the size, mass, power, and cost of future ultraviolet (UV) detection instruments by using lightweight, low-voltage AlGaN detectors in a hybrid detector/multiplexer configuration. The solar-blind feature eliminates the need for additional visible light rejection and reduces the sensitivity of the system to stray light that can contaminate observations.

  15. Effects of the high-temperature-annealed self-buffer layer on the improved properties of ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy on a-plane sapphire substrates

    NASA Astrophysics Data System (ADS)

    Koyama, T.; Fouda, A. N.; Shibata, N.; Chichibu, S. F.

    2007-10-01

    The use of the high-temperature-annealed self-buffer layer (HITAB) enabled to observe free A-and B-exciton emissions at 9K from ZnO heteroepitaxial films grown by the sputtering epitaxy method using a helicon-wave-excited plasma on uniaxially nearly lattice-matched (112¯0) Al2O3 substrates. The result was correlated with a twofold decrease in the densities of threading dislocations having both the screw and edge components, according to the dislocation concealing in ZnO HITAB due to lateral mass transport of low-temperature deposited ZnO nanocrystalline grains during high temperature annealing.

  16. Towards III-V solar cells on Si: Improvement in the crystalline quality of Ge-on-Si virtual substrates through low porosity porous silicon buffer layer and annealing

    SciTech Connect

    Calabrese, Gabriele; Baricordi, Stefano; Bernardoni, Paolo; Fin, Samuele; Guidi, Vincenzo; Vincenzi, Donato

    2014-09-26

    A comparison between the crystalline quality of Ge grown on bulk Si and on a low porosity porous Si (pSi) buffer layer using low energy plasma enhanced chemical vapor deposition is reported. Omega/2Theta coupled scans around the Ge and Si (004) diffraction peaks show a reduction of the Ge full-width at half maximum (FWHM) of 22.4% in presence of the pSi buffer layer, indicating it is effective in improving the epilayer crystalline quality. At the same time atomic force microscopy analysis shows an increase in root means square roughness for Ge grown on pSi from 38.5 nm to 48.0 nm, as a consequence of the larger surface roughness of pSi compared to bulk Si. The effect of 20 minutes vacuum annealing at 580°C is also investigated. The annealing leads to a FWHM reduction of 23% for Ge grown on Si and of 36.5% for Ge on pSi, resulting in a FWHM of 101 arcsec in the latter case. At the same time, the RMS roughness is reduced of 8.8% and of 46.5% for Ge grown on bulk Si and on pSi, respectively. The biggest improvement in the crystalline quality of Ge grown on pSi with respect to Ge grown on bulk Si observed after annealing is a consequence of the simultaneous reorganization of the Ge epilayer and the buffer layer driven by energy minimization. A low porosity buffer layer can thus be used for the growth of low defect density Ge on Si virtual substrates for the successive integration of III-V multijunction solar cells on Si. The suggested approach is simple and fast –thus allowing for high throughput-, moreover is cost effective and fully compatible with subsequent wafer processing. Finally it does not introduce new chemicals in the solar cell fabrication process and can be scaled to large area silicon wafers.

  17. Anomalous Fe diffusion in Si-ion-implanted β-Ga2O3 and its suppression in Ga2O3 transistor structures through highly resistive buffer layers

    NASA Astrophysics Data System (ADS)

    Wong, Man Hoi; Sasaki, Kohei; Kuramata, Akito; Yamakoshi, Shigenobu; Higashiwaki, Masataka

    2015-01-01

    The thermal behavior of Fe as a compensating acceptor impurity in β-Ga2O3 (010) was studied in view of growing interests in semi-insulating Fe-doped Ga2O3 substrates for the realization of high-performance Ga2O3 field-effect transistors (FETs). An anomalous redistribution of Fe beyond the extent of intrinsic thermal diffusion was revealed by secondary ion mass spectroscopy in device-relevant structures where Ga2O3 grown homoepitaxially on Fe-doped substrates was doped by Si ion (Si+) implantation and annealed at high temperatures. The enhanced Fe diffusion was attributed to an athermal process involving intrinsic defects from the region of implantation damage. An undoped Ga2O3 buffer between the Si+-implanted layer and the Fe-doped substrate effectively suppressed Fe outdiffusion by protecting the substrate against unintentional ion damage or defects from a remote source, thereby preserving the electrical integrity of the Si-doped material. Temperature-dependent current-voltage measurements indicated that the undoped Ga2O3 buffer was highly resistive with inter-device leakage attributable to surface conduction via a variable-range hopping mechanism. The buffer scheme, together with dielectric passivation to eliminate surface leakage, was proposed to constitute an integral process module for future lateral Ga2O3 FET devices.

  18. Effect of stress on the Al composition evolution in AlGaN grown using metal organic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    He, Chenguang; Qin, Zhixin; Xu, Fujun; Zhang, Lisheng; Wang, Jiaming; Hou, Mengjun; Zhang, Shan; Wang, Xinqiang; Ge, Weikun; Shen, Bo

    2016-05-01

    Two series of AlGaN samples with different stresses were designed to investigate the effect of stress on the Al composition. X-ray diffraction reciprocal space mapping (XRD RSM) demonstrated that the AlGaN epilayers with different stresses have large Al composition differences despite the same growth conditions. The largest Al composition difference reached up to 21.3%, which was also confirmed using secondary ion mass spectroscopy (SIMS). This result is attributed to a large stress discrepancy in the AlGaN epilayers. Finally, the dependences of the solid-phase Al composition on the gas-phase Al composition under different stresses were systematically analyzed.

  19. Domain matched epitaxial growth of (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} thin films on (0001) Al{sub 2}O{sub 3} with ZnO buffer layer

    SciTech Connect

    Krishnaprasad, P. S. E-mail: mkj@cusat.ac.in; Jayaraj, M. K. E-mail: mkj@cusat.ac.in; Antony, Aldrin; Rojas, Fredy

    2015-03-28

    Epitaxial (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BST) thin films have been grown by pulsed laser deposition on (0001) Al{sub 2}O{sub 3} substrate with ZnO as buffer layer. The x-ray ω-2θ, Φ-scan and reciprocal space mapping indicate epitaxial nature of BST thin films. The domain matched epitaxial growth of BST thin films over ZnO buffer layer was confirmed using Fourier filtered high resolution transmission electron microscope images of the film-buffer interface. The incorporation of ZnO buffer layer effectively suppressed the lattice mismatch and promoted domain matched epitaxial growth of BST thin films. Coplanar inter digital capacitors fabricated on epitaxial (111) BST thin films show significantly improved tunable performance over polycrystalline thin films.

  20. Epitaxial growth of Ce 2Y 2O 7 buffer layers for YBa 2Cu 3O 7-δ coated conductors using reel-to-reel DC reactive sputtering

    NASA Astrophysics Data System (ADS)

    Fan, F.; Lu, Y. M.; Ying, L. L.; Liu, Z. Y.; Cai, C. B.; Hühne, R.; Holzapfel, B.

    2011-08-01

    Biaxially textured Ce 2Y 2O 7 (CYO) films were deposited on Ni-5at.%W (Ni-5W) tapes by a DC reactive sputtering technique in a reel-to-reel system. Subsequent YBa 2Cu 3O 7-δ (YBCO) films were prepared using pulsed laser deposition leading to a simplified coated conductor architecture of YBCO/CYO/Ni-5W. X-ray diffraction measurements revealed an epitaxial growth of the CYO buffer layer with a texture spread down to 2.2° and 4.7° for the out-of-plane and in-plane alignment, respectively. Microstructural investigations showed a dense, smooth and crack-free surface morphology for CYO film up to a thickness of 350 nm, implying an effective suppression of cracks due to the incorporation of Y in CeO 2. The superconducting transition temperature T c of about 90 K with a narrow transition of 0.8 K and the inductively measured critical current density J c of about 0.7 MA/cm 2 indicate the potential of the single CYO buffer layer.

  1. Self-organization of dislocation-free, high-density, vertically aligned GaN nanocolumns involving InGaN quantum wells on graphene/SiO2 covered with a thin AlN buffer layer.

    PubMed

    Hayashi, Hiroaki; Konno, Yuta; Kishino, Katsumi

    2016-02-01

    We demonstrated the self-organization of high-density GaN nanocolumns on multilayer graphene (MLG)/SiO2 covered with a thin AlN buffer layer by RF-plasma-assisted molecular beam epitaxy. MLG/SiO2 substrates were prepared by the transfer of CVD graphene onto thermally oxidized SiO2/Si [100] substrates. Employing the MLG with an AlN buffer layer enabled the self-organization of high-density and vertically aligned nanocolumns. Transmission electron microscopy observation revealed that no threading dislocations, stacking faults, or twinning defects were included in the self-organized nanocolumns. The photoluminescence (PL) peak intensities of the self-organized GaN nanocolumns were 2.0-2.6 times higher than those of a GaN substrate grown by hydride vapor phase epitaxy. Moreover, no yellow luminescence or ZB-phase GaN emission was observed from the nanocolumns. An InGaN/GaN MQW and p-type GaN were integrated into GaN nanocolumns grown on MLG, displaying a single-peak PL emission at a wavelength of 533 nm. Thus, high-density nitride p-i-n nanocolumns were fabricated on SiO2/Si using the transferred MLG interlayer, indicating the possibility of developing visible nanocolumn LEDs on graphene/SiO2.

  2. Preparation and characterization of nanorod-like TiO2 and ZnO films used for charge-transport buffer layers in P3HT based organic solar cells

    NASA Astrophysics Data System (ADS)

    Thao, Tran Thi; Long, Dang Dinh; Truong, Vo-Van; Dinh, Nguyen Nang

    2016-08-01

    With the aim of findingout the appropriate buffer layers for organic solar cells (OSC), TiO2 and ZnO on ITO/glass were prepared as nanorod-like thin films. The TiO2 films were crystallyzed in the anatase phase and the ZnO films, in the wurtzite structure. The nanorods in both the fims have a similar size of 15 to 20 nm in diameter and 30 to 50 nm in length. The nanorods have an orientation nearly perpendicular to the ITO-substrate surface. From UV-Vis data the bandgap of the TiO2 and ZnO films were determined tobe 3.26 eV and 3.42 eV, respectively. The laminar organic solar cells with added TiO2 and ZnO, namely ITO/TiO2/P3HT:PCBM/LiF/Al (TBD) and ITO/ZnO/P3HT:PCBM/LiF/Al (ZBD)were made for characterization of the energy conversion performance. As a result, comparing to TiO2,the nanorod-likeZnO filmwas found to be a much better buffer layer that made the fill factor improve from a value of 0.60 for TBD to 0.82 for ZBD, and consequently thePCE was enhanced from 0.84 for TBD to 1.17% for ZBD.

  3. Observation of hole injection boost via two parallel paths in Pentacene thin-film transistors by employing Pentacene: 4, 4″-tris(3-methylphenylphenylamino) triphenylamine: MoO{sub 3} buffer layer

    SciTech Connect

    Yan, Pingrui; Liu, Ziyang; Liu, Dongyang; Wang, Xuehui; Yue, Shouzhen; Zhao, Yi; Zhang, Shiming

    2014-11-01

    Pentacene organic thin-film transistors (OTFTs) were prepared by introducing 4, 4″-tris(3-methylphenylphenylamino) triphenylamine (m-MTDATA): MoO{sub 3}, Pentacene: MoO{sub 3}, and Pentacene: m-MTDATA: MoO{sub 3} as buffer layers. These OTFTs all showed significant performance improvement comparing to the reference device. Significantly, we observe that the device employing Pentacene: m-MTDATA: MoO{sub 3} buffer layer can both take advantage of charge transfer complexes formed in the m-MTDATA: MoO{sub 3} device and suitable energy level alignment existed in the Pentacene: MoO{sub 3} device. These two parallel paths led to a high mobility, low threshold voltage, and contact resistance of 0.72 cm{sup 2}/V s, −13.4 V, and 0.83 kΩ at V{sub ds} = − 100 V. This work enriches the understanding of MoO{sub 3} doped organic materials for applications in OTFTs.

  4. Step buffer layer of Al0.25Ga0.75N/Al0.08Ga0.92N on P-InAlN gate normally-off high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Shrestha, Niraj M.; Li, Yiming; Chang, E. Y.

    2016-07-01

    Normally-off AlGaN/GaN high electron mobility transistors (HEMTs) are indispensable devices for power electronics as they can greatly simplify circuit designs in a cost-effective way. In this work, the electrical characteristics of p-type InAlN gate normally-off AlGaN/GaN HEMTs with a step buffer layer of Al0.25Ga0.75N/Al0.1Ga0.9N is studied numerically. Our device simulation shows that a p-InAlN gate with a step buffer layer allows the transistor to possess normally-off behavior with high drain current and high breakdown voltage simultaneously. The gate modulation by the p-InAlN gate and the induced holes appearing beneath the gate at the GaN/Al0.25Ga0.75N interface is because a hole appearing in the p-InAlN layer can effectively vary the threshold voltage positively. The estimated threshold voltage of the normally-off HEMTs explored is 2.5 V at a drain bias of 25 V, which is 220% higher than the conventional p-AlGaN normally-off AlGaN/GaN gate injection transistor (GIT). Concurrently, the maximum current density of the explored HEMT at a drain bias of 10 V slightly decreases by about 7% (from 240 to 223 mA mm-1). At a drain bias of 15 V, the current density reached 263 mA mm-1. The explored structure is promising owing to tunable positive threshold voltage and the maintenance of similar current density; notably, its breakdown voltage significantly increases by 36% (from 800 V, GIT, to 1086 V). The engineering findings of this study indicate that novel p-InAlN for both the gate and the step buffer layer can feature a high threshold voltage, large current density and high operating voltage for advanced AlGaN/GaN HEMT devices.

  5. Step buffer layer of Al0.25Ga0.75N/Al0.08Ga0.92N on P-InAlN gate normally-off high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Shrestha, Niraj M.; Li, Yiming; Chang, E. Y.

    2016-07-01

    Normally-off AlGaN/GaN high electron mobility transistors (HEMTs) are indispensable devices for power electronics as they can greatly simplify circuit designs in a cost-effective way. In this work, the electrical characteristics of p-type InAlN gate normally-off AlGaN/GaN HEMTs with a step buffer layer of Al0.25Ga0.75N/Al0.1Ga0.9N is studied numerically. Our device simulation shows that a p-InAlN gate with a step buffer layer allows the transistor to possess normally-off behavior with high drain current and high breakdown voltage simultaneously. The gate modulation by the p-InAlN gate and the induced holes appearing beneath the gate at the GaN/Al0.25Ga0.75N interface is because a hole appearing in the p-InAlN layer can effectively vary the threshold voltage positively. The estimated threshold voltage of the normally-off HEMTs explored is 2.5 V at a drain bias of 25 V, which is 220% higher than the conventional p-AlGaN normally-off AlGaN/GaN gate injection transistor (GIT). Concurrently, the maximum current density of the explored HEMT at a drain bias of 10 V slightly decreases by about 7% (from 240 to 223 mA mm‑1). At a drain bias of 15 V, the current density reached 263 mA mm‑1. The explored structure is promising owing to tunable positive threshold voltage and the maintenance of similar current density; notably, its breakdown voltage significantly increases by 36% (from 800 V, GIT, to 1086 V). The engineering findings of this study indicate that novel p-InAlN for both the gate and the step buffer layer can feature a high threshold voltage, large current density and high operating voltage for advanced AlGaN/GaN HEMT devices.

  6. Molecular beam epitaxial growth and characterization of Al(Ga)N nanowire deep ultraviolet light emitting diodes and lasers

    NASA Astrophysics Data System (ADS)

    Mi, Z.; Zhao, S.; Woo, S. Y.; Bugnet, M.; Djavid, M.; Liu, X.; Kang, J.; Kong, X.; Ji, W.; Guo, H.; Liu, Z.; Botton, G. A.

    2016-09-01

    We report on the detailed molecular beam epitaxial growth and characterization of Al(Ga)N nanowire heterostructures on Si and their applications for deep ultraviolet light emitting diodes and lasers. The nanowires are formed under nitrogen-rich conditions without using any metal catalyst. Compared to conventional epilayers, Mg-dopant incorporation is significantly enhanced in nearly strain- and defect-free Al(Ga)N nanowire structures, leading to efficient p-type conduction. The resulting Al(Ga)N nanowire LEDs exhibit excellent performance, including a turn-on voltage of ∼5.5 V for an AlN nanowire LED operating at 207 nm. The design, fabrication, and performance of an electrically injected AlGaN nanowire laser operating in the UV-B band is also presented.

  7. The Band Gap of AlGaN Alloys

    SciTech Connect

    Biefeld, R.M.; Crawford, M.H.; Han, J.; Lee, S.R.; Petersen, G.A.; Wright, A.F.

    1999-01-29

    The band gap of AlXGal.XN is measured for the composition range 0s<0.45; the resulting bowing parameter, b=+O.69 eV, is compared to 20 previous works. A correlation is found between the measured band gaps and the methods used for epitaxial growth of the AlXGal_XN: directly nucleated or buffered growths of AlXGal-XN initiated at temperatures T>800 C on sapphire usually lead to stronger apparent bowing (b> +1.3 eV); while growths initiated using low-temperature buffers on sapphire, followed by high-temperature growth, lead to weaker bowing (b<+ 1.3 eV). Extant data suggests that the correct band-gap bowing parameter for AlXGal-XN is b=+O.62 (N.45) eV.

  8. Inverted polymer fullerene solar cells exceeding 10% efficiency with poly(2-ethyl-2-oxazoline) nanodots on electron-collecting buffer layers

    PubMed Central

    Nam, Sungho; Seo, Jooyeok; Woo, Sungho; Kim, Wook Hyun; Kim, Hwajeong; Bradley, Donal D. C.; Kim, Youngkyoo

    2015-01-01

    Polymer solar cells have been spotlighted due to their potential for low-cost manufacturing but their efficiency is still less than required for commercial application as lightweight/flexible modules. Forming a dipole layer at the electron-collecting interface has been suggested as one of the more attractive approaches for efficiency enhancement. However, only a few dipole layer material types have been reported so far, including only one non-ionic (charge neutral) polymer. Here we show that a further neutral polymer, namely poly(2-ethyl-2-oxazoline) (PEOz) can be successfully used as a dipole layer. Inclusion of a PEOz layer, in particular with a nanodot morphology, increases the effective work function at the electron-collecting interface within inverted solar cells and thermal annealing of PEOz layer leads to a state-of-the-art 10.74% efficiency for single-stack bulk heterojunction blend structures comprising poly[4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b:4,5-b′]dithiophene-alt-3-fluorothieno[3,4-b]thiophene-2-carboxylate] as donor and [6,6]-phenyl-C71-butyric acid methyl ester as acceptor. PMID:26656447

  9. Improving charge transport of P3HT:PCBM organic solar cell using MoO3 nanoparticles as an interfacial buffer layer

    NASA Astrophysics Data System (ADS)

    Kim, Jae-Hyoung; Park, Eung-Kyu; Kim, Ji-Hwan; Cho, Hyeong Jun; Lee, Dong-Hoon; Kim, Yong-Sang

    2016-05-01

    In this work, P3HT:PCBM based organic solar cells (OSCs) were fabricated. We investigated the protection of PEDOT:PSS from active layer using the solution processed molybdenum oxide nanoparticles layer (MoO3 NPs, ≤100 nm). The device structure was ITO/ZnO/P3HT: PCBM/MoO3/PEDOT:PSS/Ag. A thin film MoO3 NPs was spin-coated and it acts as a hole transporting layer between the active layer and PEDOT:PSS. The MoO3 NPs based device showed an improved short circuit current compared without MoO3 NP layer. The pristine OSCs showed short circuit current density ( J sc ) of 11.56 mA/cm2 and PCE of 3.70% under AM 1.5G (100 mW/cm2). MoO3 NPs based device showed an increased PCE of 4.11% with J sc of 12.74 mA/cm2. MoO3 NPs also decreased the charge recombination and resistance of the OSCs. [Figure not available: see fulltext.

  10. Inverted polymer fullerene solar cells exceeding 10% efficiency with poly(2-ethyl-2-oxazoline) nanodots on electron-collecting buffer layers

    NASA Astrophysics Data System (ADS)

    Nam, Sungho; Seo, Jooyeok; Woo, Sungho; Kim, Wook Hyun; Kim, Hwajeong; Bradley, Donal D. C.; Kim, Youngkyoo

    2015-12-01

    Polymer solar cells have been spotlighted due to their potential for low-cost manufacturing but their efficiency is still less than required for commercial application as lightweight/flexible modules. Forming a dipole layer at the electron-collecting interface has been suggested as one of the more attractive approaches for efficiency enhancement. However, only a few dipole layer material types have been reported so far, including only one non-ionic (charge neutral) polymer. Here we show that a further neutral polymer, namely poly(2-ethyl-2-oxazoline) (PEOz) can be successfully used as a dipole layer. Inclusion of a PEOz layer, in particular with a nanodot morphology, increases the effective work function at the electron-collecting interface within inverted solar cells and thermal annealing of PEOz layer leads to a state-of-the-art 10.74% efficiency for single-stack bulk heterojunction blend structures comprising poly[4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b:4,5-b']dithiophene-alt-3-fluorothieno[3,4-b]thiophene-2-carboxylate] as donor and [6,6]-phenyl-C71-butyric acid methyl ester as acceptor.

  11. Tungsten oxide buffer layers fabricated in an inert sol-gel process at room-temperature for blue organic light-emitting diodes.

    PubMed

    Höfle, Stefan; Bruns, Michael; Strässle, Stefan; Feldmann, Claus; Lemmer, Uli; Colsmann, Alexander

    2013-08-14

    WO3 deposition from tungsten ethoxide precursor solutions at room temperature is demonstrated. The W(OEt)6 precursor can be converted under inert conditions and hence avoids sample contamination with oxygen, opening a pathway to more stable devices. The stoichiometry of all WO3 layers and the optoelectronic performance of the respective SMOLEDs well match thermally evaporated WO3 and its corresponding SMOLEDs. The solution processed WO3 hole injection layers enable the fabrication of blue phosphorescent OLEDs with low onset voltage and current efficiencies of up to 14 cd A(-1) .

  12. Framework to predict optimal buffer layer pairing for thin film solar cell absorbers: A case study for tin sulfide/zinc oxysulfide

    SciTech Connect

    Mangan, Niall M.; Brandt, Riley E.; Steinmann, Vera; Jaramillo, R.; Poindexter, Jeremy R.; Chakraborty, Rupak; Buonassisi, Tonio; Yang, Chuanxi; Park, Helen Hejin; Zhao, Xizhu; Gordon, Roy G.

    2015-09-21

    An outstanding challenge in the development of novel functional materials for optoelectronic devices is identifying suitable charge-carrier contact layers. Herein, we simulate the photovoltaic device performance of various n-type contact material pairings with tin(II) sulfide (SnS), a p-type absorber. The performance of the contacting material, and resulting device efficiency, depend most strongly on two variables: conduction band offset between absorber and contact layer, and doping concentration within the contact layer. By generating a 2D contour plot of device efficiency as a function of these two variables, we create a performance-space plot for contacting layers on a given absorber material. For a simulated high-lifetime SnS absorber, this 2D performance-space illustrates two maxima, one local and one global. The local maximum occurs over a wide range of contact-layer doping concentrations (below 10{sup 16 }cm{sup −3}), but only a narrow range of conduction band offsets (0 to −0.1 eV), and is highly sensitive to interface recombination. This first maximum is ideal for early-stage absorber research because it is more robust to low bulk-minority-carrier lifetime and pinholes (shunts), enabling device efficiencies approaching half the Shockley-Queisser limit, greater than 16%. The global maximum is achieved with contact-layer doping concentrations greater than 10{sup 18 }cm{sup −3}, but for a wider range of band offsets (−0.1 to 0.2 eV), and is insensitive to interface recombination. This second maximum is ideal for high-quality films because it is more robust to interface recombination, enabling device efficiencies approaching the Shockley-Queisser limit, greater than 20%. Band offset measurements using X-ray photoelectron spectroscopy and carrier concentration approximated from resistivity measurements are used to characterize the zinc oxysulfide contacting layers in recent record-efficiency SnS devices. Simulations representative of these

  13. Effect of As Passivation on Vapor-Phase Epitaxial Growth of Ge on (211)Si as a Buffer Layer for CdTe Epitaxy

    NASA Astrophysics Data System (ADS)

    Shintri, Shashidhar; Rao, Sunil; Sarney, Wendy; Garg, Saurabh; Palosz, Witold; Trivedi, Sudhir; Wijewarnasuriya, Priyalal; Bhat, Ishwara

    2011-08-01

    We report an investigation of epitaxial germanium grown by chemical vapor deposition (CVD) on arsenic-terminated (211)Si, which is the preferred substrate in the USA for fabrication of night-vision devices based on mercury cadmium telluride (MCT) grown by molecular-beam epitaxy (MBE). The films were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), cross-sectional transmission electron microscopy (XTEM), and x-ray diffraction (XRD). Arsenic passivation was found to be effective in preventing cross-contamination of unwanted residual species present inside the reactor chamber and also in prolonging the evolution of layer-by-layer growth of Ge for significantly more monolayers than on nonpassivated Si. The two-dimensional (2D) to three-dimensional (3D) transition resulted in Ge islands, the density and morphology of which showed a clear distinction between passivated and nonpassivated (211)Si. Finally, thick Ge layers (˜250 nm) were grown at 525°C and 675°C with and without As passivation, where the layers grown with As passivation resulted in higher crystal quality and smooth surface morphology.

  14. Néel temperature of Cr{sub 2}O{sub 3} in Cr{sub 2}O{sub 3}/Co exchange-coupled system: Effect of buffer layer

    SciTech Connect

    Pati, Satya Prakash E-mail: phy-satya@yahoo.co.in; Shimomura, Naoki; Nozaki, Tomohiro; Sahashi, Masashi; Shibata, Tatsuo

    2015-05-07

    The lattice parameter dependence of the Néel temperature T{sub N} of thin Cr{sub 2}O{sub 3} in a Cr{sub 2}O{sub 3}/Co exchange-coupled system is investigated. Lattice-mismatch-induced strain is generated in Cr{sub 2}O{sub 3} by using different buffer layers. The lattice parameters are determined from out-of-plane and in-plane X-ray diffraction measurements. The Néel temperature is detected by direct temperature-dependent magnetization measurement as well as the temperature-dependent interface exchange coupling energy. It is observed that in-plane lattice contraction can enhance T{sub N} in Cr{sub 2}O{sub 3}, which is consistent with theoretical calculations.

  15. High critical temperature superconductor substrate and buffer layer compounds, A2MeSbO6 (where A=Ba and Sr; and Me=Sc, In and Ga). Technical report, January-December 1995

    SciTech Connect

    Tauber, A.; Tidrow, S.C.; Finnegan, R.D.; Wilber, W.D.

    1996-05-01

    Compounds in the series A2MeSbO6, where A=Ba, Sr, and Me=Sc, In, and Ga, have been used as substrate buffer layers with YBa2Cu3O(7-x) thin films. These materials were prepared by solid-state reaction of the oxides and carbonates. The compounds are ordered perovskites except for Ba2InSbO6. All compounds are cubic except Sr2ScSbO6 and Sr2GaSbO6 which are pseudo-cubic, tetragonal. Dielectric constant and loss tangent are reported for each bulk compound. Herein is described the successful deposition of thin films A2MeSbO6 on (100) MgO and A2MeSbO6/(001) YBCO/(100) MgO by pulsed laser ablation.

  16. Formation of a strontium buffer layer on Si(001) by pulsed-laser deposition through the Sr/Si(001)(2 × 3) surface reconstruction

    SciTech Connect

    Klement, D.; Spreitzer, M.; Suvorov, D.

    2015-02-16

    The formation of a ½ monolayer (ML) of strontium (Sr) on Si(001) represents the most widely used and effective passivation procedure for the epitaxial growth of strontium titanate (SrTiO{sub 3}) on Si with molecular beam epitaxy (MBE). In the present study, we demonstrate experimentally the possibility of preparing such a buffer layer with the pulsed-laser deposition (PLD) technique. In-situ analysis using reflection high-energy electron diffraction (RHEED) showed surface structure evolution from two-domain (2 × 1) + (1 × 2), exhibited by the bare silicon surface, to a (3 × 2) + (2 × 3) structure at 1/6 ML Sr coverage, which is then replaced by (1 × 2) + (2 × 1) structure at ¼ ML and maintained up to ½ ML coverage. In addition, two different processes for the removal of native silicon dioxide (SiO{sub 2}) layer were studied: thermal and Sr-induced deoxidation process. Annealing above 1100 °C proved to be the most efficient in terms of carbon contamination. The results highlight the possibilities of using the PLD technique for the synthesis of an epitaxial SrTiO{sub 3} layer on Si, needed for the integration of different functional oxides with a Si platform.

  17. Native cation vacancies in Si-doped AlGaN studied by monoenergetic positron beams

    NASA Astrophysics Data System (ADS)

    Uedono, A.; Tenjinbayashi, K.; Tsutsui, T.; Shimahara, Y.; Miyake, H.; Hiramatsu, K.; Oshima, N.; Suzuki, R.; Ishibashi, S.

    2012-01-01

    Native defects in Si-doped AlGaN grown by metalorganic vapor phase epitaxy were probed by monoenergetic positron beams. Doppler broadening spectra of the annihilation radiation and positron lifetimes were measured, and these were compared with results obtained using first-principles calculation. For Si-doped AlxGa1-xN (4 × 1017 Si/cm3), the vacancy-type defects were introduced at above x = 0.54, and this was attributed to the transition of the growth mode to the Stranski-Krastanov mechanism from the Frank-van der Merwe mechanism. For Si-doped Al0.6Ga0.4N, the vacancy concentration increased with increasing Si concentration, and the major defect species was identified as Al vacancies. A clear correlation between the suppression of cathodoluminescence and the defect concentration was obtained, suggesting the cation vacancies act as nonradiative centers in AlGaN.

  18. Growth, structural and optical properties of AlGaN nanowires in the whole composition range.

    PubMed

    Pierret, A; Bougerol, C; Murcia-Mascaros, S; Cros, A; Renevier, H; Gayral, B; Daudin, B

    2013-03-22

    We report on the growth of AlxGa1-xN nanowires by plasma-assisted molecular beam epitaxy for x in the 0.3-0.8 range. Based on a combination of macro- and micro-photoluminescence, Raman spectroscopy, x-ray diffraction and scanning electron microscopy experiments, it is shown that the structural and optical properties of AlGaN NWs are governed by the presence of compositional fluctuations associated with strongly localized electronic states. A growth model is proposed, which suggests that, depending on growth temperature and metal adatom density, macroscopic composition fluctuations are mostly of kinetic origin and are directly related to the nucleation of the AlGaN nanowire section on top of the GaN nanowire base which is used as a substrate.

  19. Growth, structural and optical properties of AlGaN nanowires in the whole composition range

    NASA Astrophysics Data System (ADS)

    Pierret, A.; Bougerol, C.; Murcia-Mascaros, S.; Cros, A.; Renevier, H.; Gayral, B.; Daudin, B.

    2013-03-01

    We report on the growth of AlxGa1-xN nanowires by plasma-assisted molecular beam epitaxy for x in the 0.3-0.8 range. Based on a combination of macro- and micro-photoluminescence, Raman spectroscopy, x-ray diffraction and scanning electron microscopy experiments, it is shown that the structural and optical properties of AlGaN NWs are governed by the presence of compositional fluctuations associated with strongly localized electronic states. A growth model is proposed, which suggests that, depending on growth temperature and metal adatom density, macroscopic composition fluctuations are mostly of kinetic origin and are directly related to the nucleation of the AlGaN nanowire section on top of the GaN nanowire base which is used as a substrate.

  20. Bias Selectable Dual Band AlGaN Ultra-violet Detectors

    NASA Technical Reports Server (NTRS)

    Yan, Feng; Miko, Laddawan; Franz, David; Guan, Bing; Stahle, Carl M.

    2007-01-01

    Bias selectable dual band AlGaN ultra-violet (UV) detectors, which can separate UV-A and UV-B using one detector in the same pixel by bias switching, have been designed, fabricated and characterized. A two-terminal n-p-n photo-transistor-like structure was used. When a forward bias is applied between the top electrode and the bottom electrode, the detectors can successfully detect W-A and reject UV-B. Under reverse bias, they can detect UV-B and reject UV-A. The proof of concept design shows that it is feasible to fabricate high performance dual-band UV detectors based on the current AlGaN material growth and fabrication technologies.

  1. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect

    Kuppulingam, B. Singh, Shubra Baskar, K.

    2014-04-24

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  2. VIRTUAL FRAME BUFFER INTERFACE

    NASA Technical Reports Server (NTRS)

    Wolfe, T. L.

    1994-01-01

    Large image processing systems use multiple frame buffers with differing architectures and vendor supplied user interfaces. This variety of architectures and interfaces creates software development, maintenance, and portability problems for application programs. The Virtual Frame Buffer Interface program makes all frame buffers appear as a generic frame buffer with a specified set of characteristics, allowing programmers to write code which will run unmodified on all supported hardware. The Virtual Frame Buffer Interface converts generic commands to actual device commands. The virtual frame buffer consists of a definition of capabilities and FORTRAN subroutines that are called by application programs. The virtual frame buffer routines may be treated as subroutines, logical functions, or integer functions by the application program. Routines are included that allocate and manage hardware resources such as frame buffers, monitors, video switches, trackballs, tablets and joysticks; access image memory planes; and perform alphanumeric font or text generation. The subroutines for the various "real" frame buffers are in separate VAX/VMS shared libraries allowing modification, correction or enhancement of the virtual interface without affecting application programs. The Virtual Frame Buffer Interface program was developed in FORTRAN 77 for a DEC VAX 11/780 or a DEC VAX 11/750 under VMS 4.X. It supports ADAGE IK3000, DEANZA IP8500, Low Resolution RAMTEK 9460, and High Resolution RAMTEK 9460 Frame Buffers. It has a central memory requirement of approximately 150K. This program was developed in 1985.

  3. The role of surface kinetics on composition and quality of AlGaN

    NASA Astrophysics Data System (ADS)

    Bryan, Isaac; Bryan, Zachary; Mita, Seiji; Rice, Anthony; Hussey, Lindsay; Shelton, Christopher; Tweedie, James; Maria, Jon-Paul; Collazo, Ramón; Sitar, Zlatko

    2016-10-01

    Metal-polar, Al-rich AlGaN films were grown on both single crystalline AlN and sapphire substrates. The role of surface morphology and surface kinetics on AlGaN composition is presented. With the reduced dislocation density of the films grown on AlN substrates, atomically smooth bilayer stepped surfaces are achieved with RMS roughness of less than 50 pm for a 5×5 μm2 AFM scan area. By controlling the surface supersaturation through adjusting the growth rate, a transition from 2D nucleation to step flow was observed. The critical misorientation angle for step-bunching in nominal Al0.70Ga0.30N grown with a growth rate of 600 nm/h on AlN substrates was found to be 0.4°. The composition of bilayer stepped AlGaN was strongly dependent on substrate misorientation angle, where a compositional variation by a factor of two for a change in misorientation angle from 0.05 to 0.40° was observed; this is explained by the different surface diffusion lengths of Ga and Al. Step-bunching resulted in strong compositional inhomogeneity as observed by photoluminescence and scanning transmission electron microscopy studies.

  4. Spectroscopy analysis of graphene like deposition using DC unbalanced magnetron sputtering on γ‐Al{sub 2}O{sub 3} buffer layer

    SciTech Connect

    Aji, A. S. Darma, Y.

    2014-02-24

    In this work, graphene-like deposition using DC unbalanced magnetron-sputtering technique on γ‐Al{sub 2}O{sub 3} layer at low temperature has been systematically studied. The γ‐Al{sub 2}O{sub 3} was growth on silicon substrate using thermal evaporation of Al wire and continuing with dry oxidation of Al at 550 °C. Sputtering process were carried out using Fe-doped carbon pellet as a target by maintain the chamber pressure of 4.6×10{sup −2} Torr at substrate temperature of 300 °C for time deposition range of 1 to 4 hours. The quality of Al{sub 2}O{sub 3} on Si(100) and the characteristic of carbon thin film on γ‐Al{sub 2}O{sub 3} were analized by mean XRD, opctical microscopy, EDAX, FTIR, and Raman spectra. XRD and optical microscopy analysis shows that Al{sub 2}O{sub 3} film is growth uniformly on Si substrate and forming the γ phase of Al{sub 2}O{sub 3}. Raman and FTIR spectra confirm the formation of graphene like carbon layer on Al{sub 2}O{sub 3}. Additionally, thermal annealing for some sample series have been performed to study their structural stability. The change of atomic structure due to thermal annealing were analized by XRD spectra. The quality and the number of graphene layers are investigated by using Raman spectra peaks analysis.

  5. O-buffer: a framework for sample-based graphics.

    PubMed

    Qu, Huamin; Kaufman, Arie E

    2004-01-01

    We present an innovative modeling and rendering primitive, called the O-buffer, as a framework for sample-based graphics. The 2D or 3D O-buffer is, in essence, a conventional image or a volume, respectively, except that samples are not restricted to a regular grid. A sample position in the O-buffer is recorded as an offset to the nearest grid point of a regular base grid (hence the name O-buffer). The O-buffer can greatly improve the expressive power of images and volumes. Image quality can be improved by storing more spatial information with samples and by avoiding multiple resamplings. It can be exploited to represent and render unstructured primitives, such as points, particles, and curvilinear or irregular volumes. The O-buffer is therefore a unified representation for a variety of graphics primitives and supports mixing them in the same scene. It is a semiregular structure which lends itself to efficient construction and rendering. O-buffers may assume a variety of forms including 2D O-buffers, 3D O-buffers, uniform O-buffers, nonuniform O-buffers, adaptive O-buffers, layered-depth O-buffers, and O-buffer trees. We demonstrate the effectiveness of the O--buffer in a variety of applications, such as image-based rendering, point sample rendering, and volume rendering. PMID:18579969

  6. High-efficiency blue LEDs with thin AlGaN interlayers in InGaN/GaN MQWs grown on Si (111) substrates

    NASA Astrophysics Data System (ADS)

    Kimura, Shigeya; Yoshida, Hisashi; Ito, Toshihide; Okada, Aoi; Uesugi, Kenjiro; Nunoue, Shinya

    2016-02-01

    We demonstrate high-efficiency blue light-emitting diodes (LEDs) with thin AlGaN interlayers in InGaN/GaN multiquantum wells (MQWs) grown on Si (111) substrates. The peak external quantum efficiency (EQE) ηEQE of 82% at room temperature and the hot/cold factor (HCF) of 94% have been obtained by using the functional thin AlGaN interlayers in the MQWs in addition to reducing threading dislocation densities (TDDs) in the blue LEDs. An HCF is defined as ηEQE(85°C)/ηEQE(25°C). The blue LED structures were grown by metal-organic chemical vapor deposition on Si (111) substrates. The MQWs applied as an active layer have 8- pairs of InGaN/AlyGa1-yN/GaN (0<=y<=1) heterostructures. Thinfilm LEDs were fabricated by removing the Si (111) substrates from the grown layers. It is observed by high-resolution transmission electron microscopy and three-dimensional atom probe analysis that the 1 nm-thick AlyGa1-yN interlayers, whose Al content is y=0.3 or less, are continuously formed. EQE and the HCFs of the LEDs with thin Al0.15Ga0.85N interlayers are enhanced compared with those of the samples without the interlayers in the low-current-density region. We consider that the enhancement is due to both the reduction of the nonradiative recombination centers and the increase of the radiative recombination rate mediated by the strain-induced hole carriers indicated by the simulation of the energy band diagram.

  7. Impact of an ultra-thin ZrTiO4 buffer layer for long retention characteristics of metal–ferroelectric–insulator–semiconductor capacitor

    NASA Astrophysics Data System (ADS)

    Hyo Park, Jae; Joo, Seung Ki

    2016-05-01

    In most ferroelectric field-effect transistors (FeFETs), a thin interfacial layer is inserted between the ferroelectric and semiconductor in order to avoid the interdiffusion of metallic impurities. In this work, we have used ZrTiO4 (ZTO) as an interfacial layer to improve the interface of Pb(Zr,Ti)O3 (PZT)/Si and prevent the diffusion of metallic impurities of PZT. It was found that optimizing the thickness of ZTO strongly influences the FeFET retention characteristics. Gate leakage current and Pb metallic interdiffusion were effectively suppressed when the ZTO thickness was thicker than 5 nm. However, a self-depolarization field was generated by the charge compensation loss in PZT, caused by the thick ZTO. On the other hand, our sample showed a large gate leakage current and Pb metallic interdiffusion when ZTO was thinner than 2 nm. It was found that 2 nm thick ZTO is the optimum thickness for long retention characteristics in FeFETs.

  8. Quality-enhanced In{sub 0.3}Ga{sub 0.7}As film grown on GaAs substrate with an ultrathin amorphous In{sub 0.6}Ga{sub 0.4}As buffer layer

    SciTech Connect

    Gao, Fangliang; Li, Guoqiang

    2014-01-27

    Using low-temperature molecular beam epitaxy, amorphous In{sub 0.6}Ga{sub 0.4}As layers have been grown on GaAs substrates to act as buffer layers for the subsequent epitaxial growth of In{sub 0.3}Ga{sub 0.7}As films. It is revealed that the crystallinity of as-grown In{sub 0.3}Ga{sub 0.7}As films is strongly affected by the thickness of the large-mismatched amorphous In{sub 0.6}Ga{sub 0.4}As buffer layer. Given an optimized thickness of 2 nm, this amorphous In{sub 0.6}Ga{sub 0.4}As buffer layer can efficiently release the misfit strain between the In{sub 0.3}Ga{sub 0.7}As epi-layer and the GaAs substrate, trap the threading and misfit dislocations from propagating to the following In{sub 0.3}Ga{sub 0.7}As epi-layer, and reduce the surface fluctuation of the as-grown In{sub 0.3}Ga{sub 0.7}As, leading to a high-quality In{sub 0.3}Ga{sub 0.7}As film with competitive crystallinity to that grown on GaAs substrate using compositionally graded In{sub x}Ga{sub 1-x}As metamorphic buffer layers. Considering the complexity of the application of the conventional In{sub x}Ga{sub 1-x}As graded buffer layers, this work demonstrates a much simpler approach to achieve high-quality In{sub 0.3}Ga{sub 0.7}As film on GaAs substrate and, therefore, is of huge potential for the InGaAs-based high-efficiency photovoltaic industry.

  9. Incorporation of La in epitaxial SrTiO{sub 3} thin films grown by atomic layer deposition on SrTiO{sub 3}-buffered Si (001) substrates

    SciTech Connect

    McDaniel, Martin D.; Ngo, Thong Q.; Ekerdt, John G.; Posadas, Agham; Demkov, Alexander A.; Karako, Christine M.; Bruley, John; Frank, Martin M.; Narayanan, Vijay

    2014-06-14

    Strontium titanate, SrTiO{sub 3} (STO), thin films incorporated with lanthanum are grown on Si (001) substrates at a thickness range of 5–25 nm. Atomic layer deposition (ALD) is used to grow the La{sub x}Sr{sub 1−x}TiO{sub 3} (La:STO) films after buffering the Si (001) substrate with four-unit-cells of STO deposited by molecular beam epitaxy. The crystalline structure and orientation of the La:STO films are confirmed via reflection high-energy electron diffraction, X-ray diffraction, and cross-sectional transmission electron microscopy. The low temperature ALD growth (∼225 °C) and post-deposition annealing at 550 °C for 5 min maintains an abrupt interface between Si (001) and the crystalline oxide. Higher annealing temperatures (650 °C) show more complete La activation with film resistivities of ∼2.0 × 10{sup −2} Ω cm for 20-nm-thick La:STO (x ∼ 0.15); however, the STO-Si interface is slightly degraded due to the increased annealing temperature. To demonstrate the selective incorporation of lanthanum by ALD, a layered heterostructure is grown with an undoped STO layer sandwiched between two conductive La:STO layers. Based on this work, an epitaxial oxide stack centered on La:STO and BaTiO{sub 3} integrated with Si is envisioned as a material candidate for a ferroelectric field-effect transistor.

  10. Recent advances in polymer solar cells: realization of high device performance by incorporating water/alcohol-soluble conjugated polymers as electrode buffer layer.

    PubMed

    He, Zhicai; Wu, Hongbin; Cao, Yong

    2014-02-01

    This Progress Report highlights recent advances in polymer solar cells with special attention focused on the recent rapid-growing progress in methods that use a thin layer of alcohol/water-soluble conjugated polymers as key component to obtain optimized device performance, but also discusses novel materials and device architectures made by major prestigious institutions in this field. We anticipate that due to drastic improvements in efficiency and easy utilization, this method opens up new opportunities for PSCs from various material systems to improve towards 10% efficiency, and many novel device structures will emerge as suitable architectures for developing the ideal roll-to-roll type processing of polymer-based solar cells.

  11. Mechanism for persistent hexagonal island formation in AlN buffer layer during growth on Si (111) by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Hsu, K.-Y.; Chung, H.-C.; Liu, C.-P.; Tu, L.-W.

    2007-05-21

    The characteristics of structure and morphology of AlN grown by a growth interruption method on Si (111) with plasma-assisted molecular beam epitaxy are investigated. It is found that the growth interruption method would improve the surface flatness of the AlN layer without the formation of Al droplets. However, AlN hexagonal islands were present and persistent throughout the entire growth owing to effective strain relaxation and Eherlich-Schowebel barrier effect of preexistent surface islands grown on higher terraces of the Si substrate. The density of threading dislocations underneath the hexagonal islands is much less than elsewhere in the film, which is presumably due to dislocation annihilation during the island growth process.

  12. Manipulating magnetic anisotropy of the ultrathin Co2FeAl full-Heusler alloy film via growth orientation of the Pt buffer layer

    NASA Astrophysics Data System (ADS)

    Wen, F. S.; Xiang, J. Y.; Hao, C. X.; Zhang, F.; Lv, Y. F.; Wang, W. H.; Hu, W. T.; Liu, Z. Y.

    2013-12-01

    The ultrathin films of Co2FeAl (CFA) full-Heusler alloy were prepared between two Pt layers on MgO single crystals by magnetron sputtering. By controlling the substrate temperature, different growth orientations of the Pt underlayers were realized, and their effects were investigated on the magnetic anisotropy of the ultrathin CFA film. It was revealed that different Pt orientations lead to distinctly different magnetic anisotropy for the sandwiched ultrathin CFA films. The Pt (111) orientation favors the perpendicular anisotropy, while the appearance of partial Pt (001) orientation leads to the quick decrease of perpendicular anisotropy and the complete Pt (001) orientation gives rise to the in-plane anisotropy. With the Pt (111) orientation, the temperature and thickness-induced spin reorientation transitions were investigated in the sandwiched ultrathin CFA films.

  13. Buffer-regulated biocorrosion of pure magnesium.

    PubMed

    Kirkland, Nicholas T; Waterman, Jay; Birbilis, Nick; Dias, George; Woodfield, Tim B F; Hartshorn, Richard M; Staiger, Mark P

    2012-02-01

    Magnesium (Mg) alloys are being actively investigated as potential load-bearing orthopaedic implant materials due to their biodegradability in vivo. With Mg biomaterials at an early stage in their development, the screening of alloy compositions for their biodegradation rate, and hence biocompatibility, is reliant on cost-effective in vitro methods. The use of a buffer to control pH during in vitro biodegradation is recognised as critically important as this seeks to mimic pH control as it occurs naturally in vivo. The two different types of in vitro buffer system available are based on either (i) zwitterionic organic compounds or (ii) carbonate buffers within a partial-CO(2) atmosphere. This study investigated the influence of the buffering system itself on the in vitro corrosion of Mg. It was found that the less realistic zwitterion-based buffer did not form the same corrosion layers as the carbonate buffer, and was potentially affecting the behaviour of the hydrated oxide layer that forms on Mg in all aqueous environments. Consequently it was recommended that Mg in vitro experiments use the more biorealistic carbonate buffering system when possible.

  14. Effect of process pressure and substrate temperature on CdS buffer layers deposited by using RF sputtering for Cu(In,Ga)Se2 solar cells

    NASA Astrophysics Data System (ADS)

    Choi, Ji Hyun; Jung, Sung Hee; Chung, Chee Won

    2016-02-01

    The characteristics of CdS films deposited on Cu(In,Ga)Se2(CIGS)/Mo/glass and glass substrates by using RF magnetron sputtering were investigated. The deposition pressure and the substrate temperature were selected as key parameters to examine the electrical, compositional and optical properties of the films. As the deposition pressure was increased, the resistivity increased while the carrier concentration decreased owing to a stoichiometric change and Cd-O incorporation at high pressure. Field-emission scanning electron microscopy(FE-SEM) revealed that the CdS films on CIGS/Mo became denser as the pressure was increased, which was responsible for the high transmittance of the film deposited at high pressure. As the substrate temperature was increased, the deposition rate decreased, which could be explained by using Langmuir theory. As the temperature was increased from room temperature to 573 K, the resistivity increased and the carrier concentration decreased, which was attributed to an increase in [S]/[Cd] ratio. In addition, as the temperature was increased, the small grains were agglomerated to form larger grains due to the increase in the activity of grains at high temperature. CdS films were confirmed to be uniformly deposited on the CIGS layer by using RF sputtering. The large amount of interdiffusion between the CIGS and the CdS films deposited at a high substrate temperature were observed by using X-ray photoelectron spectroscopy.

  15. Structural, Electrical, and Optical Properties of ZnO Film Used as Buffer Layer for CIGS Thin-Film Solar Cell.

    PubMed

    Choi, Eun Chang; Cha, Ji-Hyun; Jung, Duk-Young; Hong, Byungyou

    2016-05-01

    The CuIn(x)Ga(1-x)Se2 (CIGS) using the solution-based fabrication method is attractive for thin film solar cells because of its possibilities for large-area and low-cost production. ZnO films between transparent conductive oxide (TCO) and the CdS films can improve the performances of CIGS thin-film solar cells. In this study, we investigated the characteristics of ZnO film between TCO and CIGS layers in a solar cell (AZO/ZnO/CdS/CIGS/Mo), which were deposited at various thicknesses to investigate the role of the films in CIGS solar cells. It was confirmed that the conversion efficiency of a CIGS solar cell depends on the ZnO film. For a ZnO film thickness of 80 nm, the highest power conversion efficiency that a solar cell achieved was J(sc) of 18.73 mA/cm2. PMID:27483877

  16. Equilibrium Lattice Relaxation and Misfit Dislocations in Step-Graded In x Ga1- x As/GaAs (001) and In x Al1- x As/GaAs (001) Metamorphic Buffer Layers

    NASA Astrophysics Data System (ADS)

    Kujofsa, Tedi; Ayers, John E.

    2016-06-01

    The inclusion of metamorphic buffer layers (MBLs) in the design of lattice-mismatched semiconductor heterostructures is important in enhancing reliability and performance of optoelectronic and electronic devices through proper control of threading dislocations; threading dislocation can be reduced by allowing the distribution of the misfit dislocations throughout the MBL, rather than concentrating them at the interface where substrate defects and tangling can pin dislocations or otherwise reduce their mobility. Compositionally graded layers have been particularly used for this purpose and in this work we considered heterostructures involving a step-graded In x Ga1- x As or In x Al1- x As epitaxial layer on a GaAs (001) substrate. For each structure type, we present minimum energy calculations including (i) the surface and (ii) average in-plane strain and (iii) the misfit dislocation density profile with various grading coefficients (thickness and indium composition variation). In both types of structures, the average in-plane strain and misfit dislocation density profile scale with the average grading coefficient, but In x Al1- x As structures with a greater average elastic stiffness constants exhibit slightly higher average compressive in-plane strain (absolute valued) which is associated with higher misfit dislocation densities. However, the rate of change in the normalized relaxation percentage per unit thickness of each step with respect to the lattice mismatch of the step is lower in the In x Al1- x As material system. The difference of the in-plane strain is small (<3%), however, so that these material systems are virtually interchangeable in terms of their mechanical behavior (<5.1% change in elastic constants).

  17. Common data buffer

    NASA Technical Reports Server (NTRS)

    Byrne, F.

    1981-01-01

    Time-shared interface speeds data processing in distributed computer network. Two-level high-speed scanning approach routes information to buffer, portion of which is reserved for series of "first-in, first-out" memory stacks. Buffer address structure and memory are protected from noise or failed components by error correcting code. System is applicable to any computer or processing language.

  18. Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system

    PubMed Central

    He, Chenguang; Qin, Zhixin; Xu, Fujun; Zhang, Lisheng; Wang, Jiaming; Hou, Mengjun; Zhang, Shan; Wang, Xinqiang; Ge, Weikun; Shen, Bo

    2016-01-01

    Two AlGaN samples with different strain were designed to investigate mechanism of stress-driven composition evolution. It is discovered that AlGaN grown on AlN or (AlN/GaN superlattices (SLs))/GaN both consist of two distinct regions with different compositions: transition region and uniform region, which is attributed to the compositional pulling effect. The formation of the transition region is due to the partial stress release caused by the generation of misfit dislocations near the hetero-interface. And the Al composition in the uniform region depends on the magnitude of residual strain. The difference in relaxation degree is 80.5% for the AlGaN epilayers grown on different underlayers, leading to a large Al composition difference of 22%. The evolutionary process of Al composition along [0001] direction was investigated in detail. PMID:27112969

  19. Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates

    DOE PAGES

    Crawford, Mary H.; Allerman, Andrew A.; Armstrong, Andrew M.; Smith, Michael L.; Cross, Karen C.

    2015-10-30

    We fabricated optically pumped and electrically injected ultraviolet (UV) lasers on reduced-threading-dislocation-density (reduced-TDD) AlGaN templates. The overgrowth of sub-micron-wide mesas in the Al0.32Ga0.68N templates enabled a tenfold reduction in TDD, to (2–3) × 108 cm–2. Optical pumping of AlGaN hetero-structures grown on the reduced-TDD templates yielded a low lasing threshold of 34 kW/cm2 at 346 nm. Room-temperature pulsed operation of laser diodes at 353 nm was demonstrated, with a threshold of 22.5 kA/cm2. Furthermore, reduced-TDD templates have been developed across the entire range of AlGaN compositions, presenting a promising approach for extending laser diodes into the deep UV.

  20. Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates

    SciTech Connect

    Crawford, Mary H.; Allerman, Andrew A.; Armstrong, Andrew M.; Smith, Michael L.; Cross, Karen C.

    2015-10-30

    We fabricated optically pumped and electrically injected ultraviolet (UV) lasers on reduced-threading-dislocation-density (reduced-TDD) AlGaN templates. The overgrowth of sub-micron-wide mesas in the Al0.32Ga0.68N templates enabled a tenfold reduction in TDD, to (2–3) × 108 cm–2. Optical pumping of AlGaN hetero-structures grown on the reduced-TDD templates yielded a low lasing threshold of 34 kW/cm2 at 346 nm. Room-temperature pulsed operation of laser diodes at 353 nm was demonstrated, with a threshold of 22.5 kA/cm2. Furthermore, reduced-TDD templates have been developed across the entire range of AlGaN compositions, presenting a promising approach for extending laser diodes into the deep UV.

  1. Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates

    NASA Astrophysics Data System (ADS)

    Crawford, Mary H.; Allerman, Andrew A.; Armstrong, Andrew M.; Smith, Michael L.; Cross, Karen C.

    2015-11-01

    We fabricated optically pumped and electrically injected ultraviolet (UV) lasers on reduced-threading-dislocation-density (reduced-TDD) AlGaN templates. The overgrowth of sub-micron-wide mesas in the Al0.32Ga0.68N templates enabled a tenfold reduction in TDD, to (2-3) × 108 cm-2. Optical pumping of AlGaN hetero-structures grown on the reduced-TDD templates yielded a low lasing threshold of 34 kW/cm2 at 346 nm. Room-temperature pulsed operation of laser diodes at 353 nm was demonstrated, with a threshold of 22.5 kA/cm2. Reduced-TDD templates have been developed across the entire range of AlGaN compositions, presenting a promising approach for extending laser diodes into the deep UV.

  2. Buffer Therapy for Cancer

    PubMed Central

    Ribeiro, Maria de Lourdes C; Silva, Ariosto S.; Bailey, Kate M.; Kumar, Nagi B.; Sellers, Thomas A.; Gatenby, Robert A.; Ibrahim-Hashim, Arig; Gillies, Robert J.

    2013-01-01

    Oral administration of pH buffers can reduce the development of spontaneous and experimental metastases in mice, and has been proposed in clinical trials. Effectiveness of buffer therapy is likely to be affected by diet, which could contribute or interfere with the therapeutic alkalinizing effect. Little data on food pH buffering capacity was available. This study evaluated the pH and buffering capacity of different foods to guide prospective trials and test the effect of the same buffer (lysine) at two different ionization states. Food groups were derived from the Harvard Food Frequency Questionnaire. Foods were blended and pH titrated with acid from initial pH values until 4.0 to determine “buffering score”, in mmol H+/pH unit. A “buffering score” was derived as the mEq H+ consumed per serving size to lower from initial to a pH 4.0, the postprandial pH of the distal duodenum. To differentiate buffering effect from any metabolic byproduct effects, we compared the effects of oral lysine buffers prepared at either pH 10.0 or 8.4, which contain 2 and 1 free base amines, respectively. The effect of these on experimental metastases formation in mice following tail vein injection of PC-3M prostate cancer cells were monitored with in vivo bioluminescence. Carbohydrates and dairy products’ buffering score varied between 0.5 and 19. Fruits and vegetables showed a low to zero buffering score. The score of meats varied between 6 and 22. Wine and juices had negative scores. Among supplements, sodium bicarbonate and Tums® had the highest buffering capacities, with scores of 11 and 20 per serving size, respectively. The “de-buffered” lysine had a less pronounced effect of prevention of metastases compared to lysine at pH 10. This study has demonstrated the anti-cancer effects of buffer therapy and suggests foods that can contribute to or compete with this approach to manage cancer. PMID:24371544

  3. Extreme Radiation Hardness and Space Qualification of AlGaN Optoelectronic Devices

    SciTech Connect

    Sun, Ke-Xun; Balakrishnan, Kathik; Hultgren, Eric; Goebel, John; Bilenko, Yuri; Yang, Jinwei; Sun, Wenhong; Shatalov, Max; Hu, Xuhong; Gaska, Remis

    2010-09-21

    Unprecedented radiation hardness and environment robustness are required in the new generation of high energy density physics (HEDP) experiments and deep space exploration. National Ignition Facility (NIF) break-even shots will have a neutron yield of 1015 or higher. The Europa Jupiter System Mission (EJSM) mission instruments will be irradiated with a total fluence of 1012 protons/cm2 during the space journey. In addition, large temperature variations and mechanical shocks are expected in these applications under extreme conditions. Hefty radiation and thermal shields are required for Si and GaAs based electronics and optoelectronics devices. However, for direct illumination and imaging applications, shielding is not a viable option. It is an urgent task to search for new semiconductor technologies and to develop radiation hard and environmentally robust optoelectronic devices. We will report on our latest systematic experimental studies on radiation hardness and space qualifications of AlGaN optoelectronic devices: Deep UV Light Emitting Diodes (DUV LEDs) and solarblind UV Photodiodes (PDs). For custom designed AlGaN DUV LEDs with a central emission wavelength of 255 nm, we have demonstrated its extreme radiation hardness up to 2x1012 protons/cm2 with 63.9 MeV proton beams. We have demonstrated an operation lifetime of over 26,000 hours in a nitrogen rich environment, and 23,000 hours of operation in vacuum without significant power drop and spectral shift. The DUV LEDs with multiple packaging styles have passed stringent space qualifications with 14 g random vibrations, and 21 cycles of 100K temperature cycles. The driving voltage, current, emission spectra and optical power (V-I-P) operation characteristics exhibited no significant changes after the space environmental tests. The DUV LEDs will be used for photoelectric charge management in space flights. For custom designed AlGaN UV photodiodes with a central response wavelength of 255 nm, we have demonstrated

  4. Quantum chemical mechanism in parasitic reaction of AlGaN alloys formation

    NASA Astrophysics Data System (ADS)

    Makino, Osamu; Nakamura, Koichi; Tachibana, Akitomo; Tokunaga, Hiroki; Akutsu, Nakao; Matsumoto, Koh

    2000-06-01

    The mechanism of parasitic reactions among trimethylaluminum (TMA), trimethylgallium (TMG), and NH 3 in atmospheric pressure (AP) MOVPE for growth of AlGaN is theoretically studied using the quantum chemical method. The calculations show that metal-nitrogen chain growth reaction easily proceeds through the successive reactions of 'complex formation with NH 3' and 'CH 4 elimination by the bimolecular mechanism'. Additionally, a parasitic reaction in APMOVPE using other raw material is also investigated. The calculated result shows that small change of raw material raises activation energy of parasitic reaction, and, thus, the parasitic reaction is suppressed. This result suggests a way to improve APMOVPE by a suitable choice of substituent.

  5. Enhanced magnetoelectric effect in La0.67Sr0.33MnO3/PbZr0.52Ti0.48O3 multiferroic nanocomposite films with a SrRuO3 buffer layer

    NASA Astrophysics Data System (ADS)

    Tang, Z. H.; Tang, M. H.; Lv, X. S.; Cai, H. Q.; Xiao, Y. G.; Cheng, C. P.; Zhou, Y. C.; He, J.

    2013-04-01

    Epitaxial thin films of La0.67Sr0.33MnO3/PbZr0.52Ti0.48O3 (LSMO/PZT) were deposited on SrTiO3 substrates with a SrRuO3 buffer layer by employing the pulsed laser deposition method. Its crystal structure, surface morphology, and polarization switching were investigated by using X-ray diffraction, scanning electron microscopy, and piezo-force microscopy measurements, respectively. Ferroelectric behavior along with a remnant polarization (2Pr) of 62 μC/cm2, a saturated magnetization of ˜76 emu/cm3, and a magnetoelectric effect voltage coefficient αME around 202 mV/cm Oe and 300 mV/cm Oe at 1 kHz were obtained successfully for the LSMO/PZT bilayers at room temperature. The result indicated that the coupling effects of electric and magnetic fields exist in the fabricated composite thin films.

  6. Characteristics of Y-Ba-Cu-O superconductor films on GaAs with an Al sub 2 O sub 3 or AlGaO sub 3 buffer layer

    SciTech Connect

    Shewchun, J.; Chen, Y.; Hoelder, J.S.; Uher, C. )

    1991-06-10

    By depositing a buffer layer of Al{sub 2}O{sub 3} on GaAs, we have been able to laser ablate a superconducting film of Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} overtop. The onset of superconductivity is 92 K and zero resistance is observed at 80 K in a structure with a suitably annealed Al{sub 2}O{sub 3} film which is converted to AlGaO{sub 3}. Both the Al{sub 2}O{sub 3}-GaAs and the Al{sub 2}O{sub 3}-Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} interfaces are remarkably well preserved with virtually no interdiffusion or interaction. The Al{sub 2}O{sub 3} or homolog AlGaO{sub 3} film also prevents decomposition of the GaAs at the deposition temperature of 730 {degree}C.

  7. Effect of a ga-doped ZnO thin film with a ZTO buffer layer fabricated by using pulsed DC magnetron sputter for dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Song, Sang-Woo; Lee, Kyung-Ju; Roh, Ji-Hyung; Park, On-Jeon; Kim, Hwan-Sun; Moon, Byung-Moo; Ji, Min-Woo

    2014-08-01

    The electrical property of a Ga-doped ZnO(GZO) thin film is well known to be similar that of commercialized fluorine-doped tin oxide(FTO). However GZO is limited for use at high process temperatures for solar cells because of its unstable resistivity at temperatures above 300 °C. A GZO thin film compared to zinc tin oxide(ZTO)-GZO multilayer can be used at high process temperatures. A GZO thin film was deposited on glass by using pulsed DC magnetron sputter. Then, a ZTO buffer layer was deposited on the GZO surface. During the deposition, the working pressure was 5 mTorr (Z-1 glass) and 1 mTorr (Z-2 glass). Dye-sensitized solar cells (DSSCs) were fabricated using Z-1, Z-2 and commercialized FTO glasses. Z-2 showed a conversion efficiency of 4.265%, which was enhanced by 0.399% compared to that of the DSSCs using FTO(3.784%). The conversion efficiency for Z-1 (3.889%) was a little higher than that of FTO. Thus, the ZTO-GZO electrode showed better characteristics than those obtained using the FTO electrode, which can be attributed to the reduced charge recombination and series resistance.

  8. The action mechanism of TiO{sub 2}:NaYF{sub 4}:Yb{sup 3+},Tm{sup 3+} cathode buffer layer in highly efficient inverted organic solar cells

    SciTech Connect

    Liu, Chunyu; Chen, Huan; Zhao, Dan; Shen, Liang; He, Yeyuan; Guo, Wenbin E-mail: chenwy@jlu.edu.cn; Chen, Weiyou E-mail: chenwy@jlu.edu.cn

    2014-08-04

    We report the fabrication and characteristics of organic solar cells with 6.86% power conversion efficiency (PCE) by doping NaYF{sub 4}:Yb{sup 3+},Tm{sup 3+} into TiO{sub 2} cathode buffer layer. The dependence of devices performance on doping concentration of NaYF{sub 4}:Yb{sup 3+},Tm{sup 3+} is investigated. Results indicate that short-circuit current density (J{sub sc}) has an apparent improvement, leading to an enhancement of 22.7% in PCE for the optimized doping concentration of 0.05 mmol ml{sup −1} compared to the control devices. NaYF{sub 4}:Yb{sup 3+},Tm{sup 3+} nanoparticles (NPs) can play threefold roles, one is that the incident light in visible region can be scattered by NaYF{sub 4} NPs, the second is that solar irradiation in infrared region can be better utilized by Up-conversion effect of Yb{sup 3+} and Tm{sup 3+} ions, the third is that electron transport property in TiO{sub 2} thin film can be greatly improved.

  9. Hydroxyapatite thin films growth by pulsed laser deposition: effects of the Ti alloys substrate passivation on the film properties by the insertion of a TiN buffer layer

    NASA Astrophysics Data System (ADS)

    Nelea, Valentin D.; Ristoscu, Carmen; Ghica, Cornel; Pelletier, Herve; Mihailescu, Ion N.; Mille, Pierre

    2001-06-01

    Hydroxyapatite (HA), Ca5(PO4)3OH, is now widely used in stomatology and orthopedic surgery. Due to a good biocompatibility combined favorable bioactivity make as HA to be considered as a challenge to successful bone repair. We grow HA thin films on Ti-5Al-2.5Fe alloy substrate by pulsed laser deposition (PLD) technique. The films were deposited in vacuum at room temperature using a KrF excimer laser ((lambda) equals 248 nm, (tau) FWHM >= 20 ns). After deposition the HA films were annealed at 550 degree(s)C in ambient air. The insertion of a bioinert TiN buffer layer at the HA film-metallic substrate interface was studied in terms of HA film microstructure and mechanical properties. SEM, TEM and SAED analysis structurally characterized films. The mechanical properties were evaluated by nanoindentation tests in static and scratch modes. Films with TiN interlayer contain uniquely crystalline HA phase and present better mechanical characteristics as compared with those deposited directly on Ti-alloy substrate.

  10. Enhanced photoluminescence efficiency in AlGaN quantum wells with gradient-composition AlGaN barriers

    NASA Astrophysics Data System (ADS)

    Shevchenko, E. A.; Nechaev, D. V.; Jmerik, V. N.; Kaibyshev, V. Kh; Ivanov, S. V.; Toropov, A. A.

    2016-08-01

    We present photoluminescence studies of AIxGa1-xN/AlyGa1-yN (y = x+0.3) quantum well (QW) heterostructures with graded AI content in barrier layers, emitting in the range 285-315 nm. The best-established internal quantum efficiency of the QW emission is as high as 81% at 300 K, owing to enhanced activation energy of charge carriers and exciton binding energy in the QW heterostructure with optimized design.

  11. Effects of SrRuO{sub 3} buffer layer thickness on multiferroic (Bi{sub 0.90}La{sub 0.10})(Fe{sub 0.95}Mn{sub 0.05})O{sub 3} thin films

    SciTech Connect

    Wu Jiagang; Wang, John

    2009-09-01

    Multiferroic (Bi{sub 0.90}La{sub 0.10})(Fe{sub 0.95}Mn{sub 0.05})O{sub 3} (BLFMO) thin films were deposited on SrRuO{sub 3} (SRO) buffered Pt/TiO{sub 2}/SiO{sub 2}/Si(100) substrates with variable buffer layer thicknesses by using off-axis radio frequency sputtering. The orientation of BLFMO thin films is dependent on the SRO buffer layer thickness, which leads to a change in ferroelectric behavior. Due to the low leakage currents arising from the orientation change in association with the variation in SRO buffer layer thickness and the La and Mn codoping, well saturated P-E hysteresis loops (2P{sub r}approx210.0 muC/cm{sup 2} and 2E{sub c}approx525.5 kV/cm) are shown for the (111)-oriented BLFMO thin film at room temperature and 1 kHz. It also demonstrates little ferroelectric fatigue on 10{sup 9} switching cycles. Moreover, the BLFMO thin film exhibits the enhanced magnetic behavior as compared to pure BFO thin films, due to the canting of antiferromagnetically ordered spins.

  12. Rapid screening buffer layers in photovoltaics

    DOEpatents

    List, III, Frederick Alyious; Tuncer, Enis

    2014-09-09

    An apparatus and method of testing electrical impedance of a multiplicity of regions of a photovoltaic surface includes providing a multi-tipped impedance sensor with a multiplicity of spaced apart impedance probes separated by an insulating material, wherein each impedance probe includes a first end adapted for contact with a photovoltaic surface and a second end in operable communication with an impedance measuring device. The multi-tipped impedance sensor is used to contact the photovoltaic surface and electrical impedance of the photovoltaic material is measured between individual first ends of the probes to characterize the quality of the photovoltaic surface.

  13. A normally-off fully AlGaN HEMT with high breakdown voltage and figure of merit for power switch applications

    NASA Astrophysics Data System (ADS)

    Ebrahimi, Behzad; Asad, Mohsen

    2015-07-01

    In this paper, we propose a fully AlGaN high electron mobility (HEMT) in which the gate electrode, the barrier and the channel are all AlGaN. The p-type AlGaN gate facilitates the normally-off operation to be compatible with the state-of-the-art power amplifiers. In addition, the AlGaN channel increases the breakdown voltage (VBR) to 598 V due to the higher breakdown field of AlGaN compared to GaN. To assess the efficiency of the proposed structure, its characteristics are compared with the conventional and recently proposed structures. The two-dimensional device simulation results show that the proposed structure has the highest threshold voltage (Vth) and the VBR with the moderately low ON-resistance (RON). These features lead to the highest figure of merit (2.49 × 1012) among the structures which is 83%, 59%, 47% and 49% more than those of the conventional, with a field plate, AlGaN gate and AlGaN channel structures, respectively.

  14. CBED study of grain misorientations in AlGaN epilayers.

    PubMed

    Sahonta, S-L; Cherns, D; Liu, R; Ponce, F A; Amano, H; Akasaki, I

    2005-04-01

    Large angle convergent beam electron diffraction (LACBED) has been used to examine AlGaN epilayers grown by facet-controlled epitaxial lateral overgrowth on GaN/(0001) sapphire substrates in prototype UV laser structures. The substrates, defined by masks with seed openings along a <10-10> stripe direction, had GaN seed columns with {11-22} surfaces. Studies were carried out on cross-sectional samples cut perpendicular to the stripe axis. An LACBED analysis of the orientation of (000 2) planes, and of the (11-20) planes parallel to the stripe axis, revealed that the AlGaN wings were both rotated by angles of 1-2 x 10(-2)radians about the 10-10 stripe axis with respect to the underlying GaN, and distorted due to misfit strains. It is shown that the results are consistent with the observed structure of the AlGaN/GaN and the wing/wing boundaries, and with a new model for the generation of a-type misfit dislocations at the AlGaN/GaN interface. PMID:15777597

  15. Simulation for spectral response of solar-blind AlGaN based p-i-n photodiodes

    NASA Astrophysics Data System (ADS)

    Xue, Shiwei; Xu, Jintong; Li, Xiangyang

    2015-04-01

    In this article, we introduced how to build a physical model of refer to the device structure and parameters. Simulations for solar-blind AlGaN based p-i-n photodiodes spectral characteristics were conducted in use of Silvaco TCAD, where device structure and parameters are comprehensively considered. In simulation, the effects of polarization, Urbach tail, mobility, saturated velocities and lifetime in AlGaN device was considered. Especially, we focused on how the concentration-dependent Shockley-Read-Hall (SRH) recombination model affects simulation results. By simulating, we analyzed the effects in spectral response caused by TAUN0 and TAUP0, and got the values of TAUN0 and TAUP0 which can bring a result coincides with test results. After that, we changed their values and made the simulation results especially the part under 255 nm performed better. In conclusion, the spectral response between 200 nm and 320 nm of solar-blind AlGaN based p-i-n photodiodes were simulated and compared with test results. We also found that TAUN0 and TAUP0 have a large impact on spectral response of AlGaN material.

  16. An extrinsic fmax > 100 GHz InAlN/GaN HEMT with AlGaN back barrier

    NASA Astrophysics Data System (ADS)

    Bo, Liu; Zhihong, Feng; Shaobo, Dun; Xiongwen, Zhang; Guodong, Gu; Yuangang, Wang; Peng, Xu; Zezhao, He; Shujun, Cai

    2013-04-01

    We report the DC and RF performance of InAlN/GaN high-electron mobility transistors with AlGaN back barrier grown on SiC substrates. These presented results confirm the high performance that is reachable by InAlN-based technology. The InAlN/GaN HEMT sample showed a high 2DEG mobility of 1550 cm2/(V·s) at a 2DEG density of 1.7 × 1013 cm-2. DC and RF measurements were performed on the unpassivated device with 0.2 μm “T“ gate. The maximum drain current density at VGS = 2 V is close to 1.05 A/mm in a reproducible way. The reduction in gate leakage current helps to increase the frequency performance of AlGaN back barrier devices. The power gain cut-off frequency of a transistor with an AlGaN back barrier is 105 GHz, which is much higher than that of the device without an AlGaN back barrier at the same gate length. These results indicate InAlN/GaN HEMT is a promising candidate for millimeter-wave application.

  17. Layers

    NASA Astrophysics Data System (ADS)

    Hong, K. J.; Jeong, T. S.; Youn, C. J.

    2014-09-01

    The temperature-dependent photoresponse characteristics of MnAl2S4 layers have been investigated, for the first time, by use of photocurrent (PC) spectroscopy. Three peaks were observed at all temperatures. The electronic origin of these peaks was associated with band-to-band transitions from the valence-band states Γ4( z), Γ5( x), and Γ5( y) to the conduction-band state Γ1( s). On the basis of the relationship between PC-peak energy and temperature, the optical band gap could be well expressed by the expression E g( T) = E g(0) - 2.80 × 10-4 T 2/(287 + T), where E g(0) was estimated to be 3.7920 eV, 3.7955 eV, and 3.8354 eV for the valence-band states Γ4( z), Γ5( x), and Γ5( y), respectively. Results from PC spectroscopy revealed the crystal-field and spin-orbit splitting were 3.5 meV and 39.9 meV. The gradual decrease of PC intensity with decreasing temperature can be explained on the basis of trapping centers associated with native defects in the MnAl2S4 layers. Plots of log J ph, the PC current density, against 1/ T, revealed a dominant trap level in the high-temperature region. By comparing PC and the Hall effect results, we confirmed that this trap level is a shallow donor 18.9 meV below the conduction band.

  18. Intermixing at the absorber-buffer layer interface in thin-film solar cells: The electronic effects of point defects in Cu(In,Ga)(Se,S){sub 2} and Cu{sub 2}ZnSn(Se,S){sub 4} devices

    SciTech Connect

    Varley, J. B.; Lordi, V.

    2014-08-14

    We investigate point defects in the buffer layers CdS and ZnS that may arise from intermixing with Cu(In,Ga)(S,Se){sub 2} (CIGS) or Cu{sub 2}ZnSn(S,Se){sub 4} (CZTS) absorber layers in thin-film photovoltaics. Using hybrid functional calculations, we characterize the electrical and optical behavior of Cu, In, Ga, Se, Sn, Zn, Na, and K impurities in the buffer. We find that In and Ga substituted on the cation site act as shallow donors in CdS and tend to enhance the prevailing n-type conductivity at the interface facilitated by Cd incorporation in CIGS, whereas they are deep donors in ZnS and will be less effective dopants. Substitutional In and Ga can favorably form complexes with cation vacancies (A-centers) which may contribute to the “red kink” effect observed in some CIGS-based devices. For CZTS absorbers, we find that Zn and Sn defects substituting on the buffer cation site are electrically inactive in n-type buffers and will not supplement the donor doping at the interface as in CIGS/CdS or ZnS devices. Sn may also preferentially incorporate on the S site as a deep acceptor in n-type ZnS, which suggests possible concerns with absorber-related interfacial compensation in CZTS devices with ZnS-derived buffers. Cu, Na, and K impurities are found to all have the same qualitative behavior, most favorably acting as compensating acceptors when substituting on the cation site. Our results suggest one beneficial role of K and Na incorporation in CIGS or CZTS devices is the partial passivation of vacancy-related centers in CdS and ZnS buffers, rendering them less effective interfacial hole traps and recombination centers.

  19. Buffers more than buffering agent: introducing a new class of stabilizers for the protein BSA.

    PubMed

    Gupta, Bhupender S; Taha, Mohamed; Lee, Ming-Jer

    2015-01-14

    In this study, we have analyzed the influence of four biological buffers on the thermal stability of bovine serum albumin (BSA) using dynamic light scattering (DLS). The investigated buffers include 4-(2-hydroxyethyl)piperazine-1-ethanesulfonic acid (HEPES), 4-(2-hydroxyethyl)-1-piperazine-propanesulfonic acid (EPPS), 4-(2-hydroxyethyl)piperazine-1-ethanesulfonic acid sodium salt (HEPES-Na), and 4-morpholinepropanesulfonic acid sodium salt (MOPS-Na). These buffers behave as a potential stabilizer for the native structure of BSA against thermal denaturation. The stabilization tendency follows the order of MOPS-Na > HEPES-Na > HEPES ≫ EPPS. To obtain an insight into the role of hydration layers and peptide backbone in the stabilization of BSA by these buffers, we have also explored the phase transition of a thermoresponsive polymer, poly(N-isopropylacrylamide (PNIPAM)), a model compound for protein, in aqueous solutions of HEPES, EPPS, HEPES-Na, and MOPS-Na buffers at different concentrations. It was found that the lower critical solution temperatures (LCST) of PNIPAM in the aqueous buffer solutions substantially decrease with increase in buffer concentration. The mechanism of interactions between these buffers and protein BSA was probed by various techniques, including UV-visible, fluorescence, and FTIR. The results of this series of studies reveal that the interactions are mainly governed by the influence of the buffers on the hydration layers surrounding the protein. We have also explored the possible binding sites of BSA with these buffers using a molecular docking technique. Moreover, the activities of an industrially important enzyme α-chymotrypsin (α-CT) in 0.05 M, 0.5 M, and 1.0 M of HEPES, EPPS, HEPES-Na, and MOPS-Na buffer solutions were analyzed at pH = 8.0 and T = 25 °C. Interestingly, the activities of α-CT were found to be enhanced in the aqueous solutions of these investigated buffers. Based upon the Jones-Dole viscosity parameters, the

  20. Buffered Electrochemical Polishing of Niobium

    SciTech Connect

    Gianluigi Ciovati; Tian, Hui; Corcoran, Sean

    2011-03-01

    The standard preparation of superconducting radio-frequency (SRF) cavities made of pure niobium include the removal of a 'damaged' surface layer, by buffered chemical polishing (BCP) or electropolishing (EP), after the cavities are formed. The performance of the cavities is characterized by a sharp degradation of the quality factor when the surface magnetic field exceeds about 90 mT, a phenomenon referred to as 'Q-drop.' In cavities made of polycrystalline fine grain (ASTM 5) niobium, the Q-drop can be significantly reduced by a low-temperature (? 120 °C) 'in-situ' baking of the cavity if the chemical treatment was EP rather than BCP. As part of the effort to understand this phenomenon, we investigated the effect of introducing a polarization potential during buffered chemical polishing, creating a process which is between the standard BCP and EP. While preliminary results on the application of this process to Nb cavities have been previously reported, in this contribution we focus on the characterization of this novel electrochemical process by measuring polarization curves, etching rates, surface finish, electrochemical impedance and the effects of temperature and electrolyte composition. In particular, it is shown that the anodic potential of Nb during BCP reduces the etching rate and improves the surface finish.

  1. Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers

    PubMed Central

    Nguyen, Hieu Pham Trung; Djavid, Mehrdad; Woo, Steffi Y.; Liu, Xianhe; Connie, Ashfiqua T.; Sadaf, Sharif; Wang, Qi; Botton, Gianluigi A.; Shih, Ishiang; Mi, Zetian

    2015-01-01

    We report on the demonstration of a new type of axial nanowire LED heterostructures, with the use of self-organized InGaN/AlGaN dot-in-a-wire core-shell nanowire arrays. The large bandgap AlGaN shell is spontaneously formed on the sidewall of the nanowire during the growth of AlGaN barrier of the quantum dot active region. As such, nonradiative surface recombination, that dominates the carrier dynamics of conventional axial nanowire LED structures, can be largely eliminated, leading to significantly increased carrier lifetime from ~0.3 ns to 4.5 ns. The luminescence emission is also enhanced by orders of magnitude. Moreover, the p-doped AlGaN barrier layers can function as distributed electron blocking layers (EBLs), which is found to be more effective in reducing electron overflow, compared to the conventional AlGaN EBL. The device displays strong white-light emission, with a color rendering index of ~95. An output power of >5 mW is measured for a 1 mm × 1 mm device, which is more than 500 times stronger than the conventional InGaN axial nanowire LEDs without AlGaN distributed EBLs. PMID:25592057

  2. Deep ultraviolet photoluminescence of Tm-doped AlGaN alloys

    SciTech Connect

    Nepal, N.; Zavada, J. M.; Lee, D. S.; Steckl, A. J.; Sedhain, A.; Lin, J. Y.; Jiang, H. X.

    2009-03-16

    The ultraviolet (UV) photoluminescence (PL) properties of Tm-doped Al{sub x}Ga{sub 1-x}N (0.39{<=}x{<=}1) alloys grown by solid-source molecular beam epitaxy were probed using above-bandgap excitation from a laser source at 197 nm. The PL spectra show dominant UV emissions at 298 and 358 nm only for samples with x=1 and 0.81. Temperature dependence of the PL intensities of these emission lines reveals exciton binding energies of 150 and 57 meV, respectively. The quenching of these UV emissions appears related to the thermal activation of the excitons bound to rare-earth structured isovalent (RESI) charge traps, which transfer excitonic energy to Tm{sup 3+} ions resulting in the UV emissions. A model of the RESI trap levels in AlGaN alloys is presented.

  3. CHEMICAL SOLUTION DEPOSITION BASED OXIDE BUFFERS AND YBCO COATED CONDUCTORS

    SciTech Connect

    Paranthaman, Mariappan Parans

    2011-01-01

    We have reviewed briefly the growth of buffer and high temperature superconducting oxide thin films using a chemical solution deposition (CSD) method. In the Rolling-Assisted Biaxially Textured Substrates (RABiTS) process, developed at Oak Ridge National Laboratory, utilizes the thermo mechanical processing to obtain the flexible, biaxially oriented copper, nickel or nickel-alloy substrates. Buffers and Rare Earth Barium Copper Oxide (REBCO) superconductors have been deposited epitaxially on the textured nickel alloy substrates. The starting substrate serves as a template for the REBCO layer, which has substantially fewer weak links. Buffer layers play a major role in fabricating the second generation REBCO wire technology. The main purpose of the buffer layers is to provide a smooth, continuous and chemically inert surface for the growth of the REBCO film, while transferring the texture from the substrate to the superconductor layer. To achieve this, the buffer layers need to be epitaxial to the substrate, i.e. they have to nucleate and grow in the same bi-axial texture provided by the textured metal foil. The most commonly used RABiTS multi-layer architectures consist of a starting template of biaxially textured Ni-5 at.% W (Ni-W) substrate with a seed (first) layer of Yttrium Oxide (Y2O3), a barrier (second) layer of Yttria Stabilized Zirconia (YSZ), and a Cerium Oxide (CeO2) cap (third) layer. These three buffer layers are generally deposited using physical vapor deposition (PVD) techniques such as reactive sputtering. On top of the PVD template, REBCO film is then grown by a chemical solution deposition. This article reviews in detail about the list of oxide buffers and superconductor REBCO films grown epitaxially on single crystal and/or biaxially textured Ni-W substrates using a CSD method.

  4. Buffer architecture for biaxially textured structures and method of fabricating same

    DOEpatents

    Norton, David P.; Park, Chan; Goyal, Amit

    2004-04-06

    The invention relates to an article with an improved buffer layer architecture comprising a substrate having a metal surface, and an epitaxial buffer layer on the surface of the substrate. The epitaxial buffer layer comprises at least one of the group consisting of ZrO.sub.2, HfO.sub.2, and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of ZrO.sub.2 and/or HfO.sub.2. The article can also include a superconducting layer deposited on the epitaxial buffer layer. The article can also include an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article comprises providing a substrate with a metal surface, depositing on the metal surface an epitaxial buffer layer comprising at least one material selected from the group consisting of ZrO.sub.2, HfO.sub.2, and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of at least one of ZrO.sub.2 and HfO.sub.2. The epitaxial layer depositing step occurs in a vacuum with a background pressure of no more than 1.times.10.sup.-5 Torr. The method can further comprise depositing a superconducting layer on the epitaxial layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

  5. Probing alloy composition gradient and nanometer-scale carrier localization in single AlGaN nanowires by nanocathodoluminescence

    NASA Astrophysics Data System (ADS)

    Pierret, A.; Bougerol, C.; Gayral, B.; Kociak, M.; Daudin, B.

    2013-08-01

    The optical properties of single AlGaN nanowires grown by plasma-assisted molecular beam epitaxy have been studied by nanocathodoluminescence. Optical emission was found to be position-dependent and to occur in a wide wavelength range, a feature which has been assigned to a composition gradient along the nanowire growth axis, superimposed on local composition fluctuations at the nanometer scale. This behavior is associated with the growth mode of such AlGaN nanowires, which is governed by kinetics, leading to the successive formation of (i) a zone with strong local composition fluctuations followed by (ii) a zone with a marked composition gradient and, eventually, (iii) a zone corresponding to a steady state regime and the formation of a homogeneous alloy.

  6. Probing alloy composition gradient and nanometer-scale carrier localization in single AlGaN nanowires by nanocathodoluminescence.

    PubMed

    Pierret, A; Bougerol, C; Gayral, B; Kociak, M; Daudin, B

    2013-08-01

    The optical properties of single AlGaN nanowires grown by plasma-assisted molecular beam epitaxy have been studied by nanocathodoluminescence. Optical emission was found to be position-dependent and to occur in a wide wavelength range, a feature which has been assigned to a composition gradient along the nanowire growth axis, superimposed on local composition fluctuations at the nanometer scale. This behavior is associated with the growth mode of such AlGaN nanowires, which is governed by kinetics, leading to the successive formation of (i) a zone with strong local composition fluctuations followed by (ii) a zone with a marked composition gradient and, eventually, (iii) a zone corresponding to a steady state regime and the formation of a homogeneous alloy.

  7. Band alignments of different buffer layers (CdS, Zn(O,S), and In{sub 2}S{sub 3}) on Cu{sub 2}ZnSnS{sub 4}

    SciTech Connect

    Yan, Chang; Liu, Fangyang; Song, Ning; Hao, Xiaojing; Ng, Boon K.; Stride, John A.; Tadich, Anton

    2014-04-28

    The heterojunctions of different n-type buffers, i.e., CdS, Zn(O,S), and In{sub 2}S{sub 3} on p-type Cu{sub 2}ZnSnS{sub 4} (CZTS) were investigated using X-ray Photoelectron Spectroscopy (XPS) and Near Edge X-ray Absorption Fine Structure (NEXAFS) Measurements. The band alignment of the heterojunctions formed between CZTS and the buffer materials was carefully measured. The XPS data were used to determine the Valence Band Offsets (VBO) of different buffer/CZTS heterojunctions. The Conduction Band Offset (CBO) was calculated indirectly by XPS data and directly measured by NEXAFS characterization. The CBO of the CdS/CZTS heterojunction was found to be cliff-like with CBO{sub XPS} = −0.24 ± 0.10 eV and CBO{sub NEXAFS} = −0.18 ± 0.10 eV, whereas those of Zn(O,S) and In{sub 2}S{sub 3} were found to be spike-like with CBO{sub XPS} = 0.92 ± 0.10 eV and CBO{sub NEXAFS} = 0.87 ± 0.10 eV for Zn(O,S)/CZTS and CBO{sub XPS} = 0.41 ± 0.10 eV for In{sub 2}S{sub 3}/CZTS, respectively. The CZTS photovoltaic device using the spike-like In{sub 2}S{sub 3} buffer was found to yield a higher open circuit voltage (Voc) than that using the cliff-like CdS buffer. However, the CBO of In{sub 2}S{sub 3}/CZTS is slightly higher than the optimum level and thus acts to block the flow of light-generated electrons, significantly reducing the short circuit current (Jsc) and Fill Factor (FF) and thereby limiting the efficiency. Instead, the use of a hybrid buffer for optimization of band alignment is proposed.

  8. The buffer effect in neutral electrolyte supercapacitors

    NASA Astrophysics Data System (ADS)

    Vindt, Steffen T.; Skou, Eivind M.

    2016-02-01

    The observation that double-layer capacitors based on neutral aqueous electrolytes can have significantly wider usable potential windows than those based on acidic or alkaline electrolytes is studied. This effect is explained by a local pH change taking place at the electrode surfaces, leading to a change in the redox potential of water in opposite directions on the two electrodes, resulting in the wider stability window. The magnitude of this effect is suggested to be dependent on the buffer capacity, rather than the intrinsic pH value of the electrolyte. This is confirmed by studying the impact of addition of a buffer to such systems. It is shown that a 56 % higher dynamic storage capacity may be achieved, simply by controlling the buffer capacity of the electrolyte. The model system used, is based on a well-known commercial activated carbon (NORIT™ A SUPRA) as the electrode material, aqueous potassium nitrate as the electrolyte and potassium phosphates as the buffer system.

  9. Characteristics of metal-ferroelectric-insulator-silicon structures with ferroelectric (Pb{sub 0.8}Ba{sub 0.2})ZrO{sub 3} thin films and (Ba{sub 0.5}Sr{sub 0.5})TiO{sub 3} buffer layer

    SciTech Connect

    Liu, C.-H.; Wu, J.-M.; Wu, L.-J.

    2006-03-20

    The results of the fabrication and characterization of ferroelectric (Pb{sub 0.8}Ba{sub 0.2})ZrO{sub 3} (PBZ) thin films grown on nitrided silicon substrates with a (Ba{sub 0.5}Sr{sub 0.5})TiO{sub 3} (BST) buffer layer by the rf-magnetron sputtering technique are reported. The PBZ thin films were used as the ferroelectric layer in the ferroelectric field effect transistors. The PBZ thin films were grown with highly (100) preferred orientation on BST buffer layers. The Auger electron spectroscopy depth profiles showed no significant interdiffusion between the PBZ and silicon components. The capacitance-voltage properties of Pt/PBZ (360 nm)/BST (30 nm)/Si structures demonstrated ferroelectric switching effect. The memory windows were about 0.6, 1.25, and 1.76 V, respectively, for sweeping bias of {+-}3, {+-}4, and {+-}5 V. The leakage current density was below 1x10{sup -8} A/cm{sup 2} at {+-}4 V.

  10. Fabrication of Very High Efficiency 5.8 GHz Power Amplifiers using AlGaN HFETs on SiC Substrates for Wireless Power Transmission

    NASA Technical Reports Server (NTRS)

    Sullivan, Gerry

    2001-01-01

    For wireless power transmission using microwave energy, very efficient conversion of the DC power into microwave power is extremely important. Class E amplifiers have the attractive feature that they can, in theory, be 100% efficient at converting, DC power to RF power. Aluminum gallium nitride (AlGaN) semiconductor material has many advantageous properties, relative to silicon (Si), gallium arsenide (GaAs), and silicon carbide (SiC), such as a much larger bandgap, and the ability to form AlGaN/GaN heterojunctions. The large bandgap of AlGaN also allows for device operation at higher temperatures than could be tolerated by a smaller bandgap transistor. This could reduce the cooling requirements. While it is unlikely that the AlGaN transistors in a 5.8 GHz class E amplifier can operate efficiently at temperatures in excess of 300 or 400 C, AlGaN based amplifiers could operate at temperatures that are higher than a GaAs or Si based amplifier could tolerate. Under this program, AlGaN microwave power HFETs have been fabricated and characterized. Hybrid class E amplifiers were designed and modeled. Unfortunately, within the time frame of this program, good quality HFETs were not available from either the RSC laboratories or commercially, and so the class E amplifiers were not constructed.

  11. Buffer Capacity: An Undergraduate Laboratory Experiment.

    ERIC Educational Resources Information Center

    Russo, Steven O.; Hanania, George I. H.

    1987-01-01

    Describes a quantitative experiment designed to demonstrate buffer action and the measurement of buffer capacity. Discusses how to make acetate buffers, determine their buffer capacity, plot the capacity/pH curve, and interpret the data obtained. (TW)

  12. Electrical and optical properties of Fe doped AlGaN grown by molecular beam epitaxy

    SciTech Connect

    Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Kozhukhova, E. A.; Dabiran, A. M.; Chow, P. P.; Wowchak, A. M.; Pearton, S. J.

    2010-01-15

    Electrical and optical properties of AlGaN grown by molecular beam epitaxy were studied in the Al composition range 15%-45%. Undoped films were semi-insulating, with the Fermi level pinned near E{sub c}-0.6-0.7 eV. Si doping to (5-7)x10{sup 17} cm{sup -3} rendered the 15% Al films conducting n-type, but a large portion of the donors were relatively deep (activation energy 95 meV), with a 0.15 eV barrier for capture of electrons giving rise to strong persistent photoconductivity (PPC) effects. The optical threshold of this effect was {approx}1 eV. Doping with Fe to a concentration of {approx}10{sup 17} cm{sup -3} led to decrease in concentration of uncompensated donors, suggesting compensation by Fe acceptors. Addition of Fe strongly suppressed the formation of PPC-active centers in favor of ordinary shallow donors. For higher Al compositions, Si doping of (5-7)x10{sup 17} cm{sup -3} did not lead to n-type conductivity. Fe doping shifted the bandedge luminescence by 25-50 meV depending on Al composition. The dominant defect band in microcathodoluminescence spectra was the blue band near 3 eV, with the energy weakly dependent on composition.

  13. Virtual Frame Buffer Interface Program

    NASA Technical Reports Server (NTRS)

    Wolfe, Thomas L.

    1990-01-01

    Virtual Frame Buffer Interface program makes all frame buffers appear as generic frame buffer with specified set of characteristics, allowing programmers to write codes that run unmodified on all supported hardware. Converts generic commands to actual device commands. Consists of definition of capabilities and FORTRAN subroutines called by application programs. Developed in FORTRAN 77 for DEC VAX 11/780 or DEC VAX 11/750 computer under VMS 4.X.

  14. Buffer capacity of biologics--from buffer salts to buffering by antibodies.

    PubMed

    Karow, Anne R; Bahrenburg, Sven; Garidel, Patrick

    2013-01-01

    Controlling pH is essential for a variety of biopharmaceutical process steps. The chemical stability of biologics such as monoclonal antibodies is pH-dependent and slightly acidic conditions are favorable for stability in a number of cases. Since control of pH is widely provided by added buffer salts, the current study summarizes the buffer characteristics of acetate, citrate, histidine, succinate, and phosphate buffers. Experimentally derived values largely coincide with values calculated from a model that had been proposed in 1922 by van Slyke. As high concentrated protein formulations become more and more prevalent for biologics, the self-buffering potential of proteins becomes of relevance. The current study provides information on buffer characteristics for pH ranges down to 4.0 and up to 8.0 and shows that a monoclonal antibody at 50 mg/mL exhibits similar buffer capacity as 6 mM citrate or 14 mM histidine (pH 5.0-6.0). Buffer capacity of antibody solutions scales linearly with protein concentration up to more than 200 mg/mL. At a protein concentration of 220 mg/mL, the buffer capacity resembles the buffer capacity of 30 mM citrate or 50 mM histidine (pH 5.0-6.0). The buffer capacity of monoclonal antibodies is practically identical at the process relevant temperatures 5, 25, and 40°C. Changes in ionic strength of ΔI=0.15, in contrast, can alter the buffer capacity up to 35%. In conclusion, due to efficient self-buffering by antibodies in the pH range of favored chemical stability, conventional buffer excipients could be dispensable for pH stabilization of high concentrated protein solutions.

  15. Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability

    SciTech Connect

    Liu, L.; Xi, Y. Y.; Ren, F.; Pearton, S. J.; Laboutin, O.; Cao, Yu; Johnson, Wayne J.; Kravchenko, Ivan I

    2012-01-01

    AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

  16. Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al{sub 2}O{sub 3} in AlGaN/GaN high electron mobility transistors with normally off capability

    SciTech Connect

    Capriotti, M. Alexewicz, A.; Fleury, C.; Gavagnin, M.; Bethge, O.; Wanzenböck, H. D.; Bertagnolli, E.; Pogany, D.; Strasser, G.; Visalli, D.; Derluyn, J.

    2014-03-17

    Using a generalized extraction method, the fixed charge density N{sub int} at the interface between in situ deposited SiN and 5 nm thick AlGaN barrier is evaluated by measurements of threshold voltage V{sub th} of an AlGaN/GaN metal insulator semiconductor high electron mobility transistor as a function of SiN thickness. The thickness of the originally deposited 50 nm thick SiN layer is reduced by dry etching. The extracted N{sub int} is in the order of the AlGaN polarization charge density. The total removal of the in situ SiN cap leads to a complete depletion of the channel region resulting in V{sub th} = +1 V. Fabrication of a gate stack with Al{sub 2}O{sub 3} as a second cap layer, deposited on top of the in situ SiN, is not introducing additional fixed charges at the SiN/Al{sub 2}O{sub 3} interface.

  17. Raman spectroscopy of GaN and AlGaN nanowires: from ensemble to single nanowire study

    NASA Astrophysics Data System (ADS)

    Wang, J.; Bayon, C.; Demangeot, F.; Pechou, R.; Mlayah, A.; Cros, A.; Daudin, B.

    2013-03-01

    Self-assembled GaN nanowires (NWs) currently are a subject of sustained interest in the scientific community motivated by both their potential applications for new LEDs, which should take benefit of the improved crystalline quality of those nano-objects, due to a strongly reduced defects density. In addition, interest of the scientific community for these 1D nano-systems is also related to the new fundamental questions opened by their strongly anisotropic geometry, and to their potential as possible building blocks for future nano-electronic devices. In this context, Raman spectroscopy has been increasingly used to study nitride NWs and several new phenomena have been reported to date with respect to these one-dimensional structures. In this work, both GaN and AlGaN nanowires grown by plasma-assisted Molecular Beam Epitaxy (MBE) have been experimentally investigated by scanning electron microscopy, atomic force microscopy and micro-Raman spectroscopy. Experimental results are analyzed and compared to theoretical ones obtained by dielectric models and Discrete Dipole Approximation (DDA) method. Evidence is given for original surface effects in the optical phonon physics related to both structural anisotropy of the material and 1D geometry of the GaN NWs. By using UV resonant excitation for AlGaN NWs in the whole range of composition, we demonstrate the selective excitation of AlGaN with the Al composition matching the energy of the exciting photons. Finally, we analyzed Raman data from single GaN NW after deposition on a flat substrate and we discuss the nature of strongly polarized A1(TO) phonon as a function of the NWs aspect ratio.

  18. Influence of buffer-layer construction and substrate orientation on the electron mobilities in metamorphic In{sup 0.70}Al{sup 0.30}As/In{sup 0.76}Ga{sup 0.24}As/In{sup 0.70}Al{sup 0.30}As structures on GaAs substrates

    SciTech Connect

    Kulbachinskii, V. A.; Oveshnikov, L. N.; Lunin, R. A.; Yuzeeva, N. A.; Galiev, G. B.; Klimov, E. A.; Pushkarev, S. S.; Maltsev, P. P.

    2015-07-15

    The influence of construction of the buffer layer and misorientation of the substrate on the electrical properties of In{sup 0.70}Al{sup 0.30}As/In{sup 0.76}Ga{sup 0.24}As/In{sup 0.70}Al{sup 0.30}As quantum wells on a GaAs substrate is studied. The temperature dependences (in the temperature range of 4.2 K < T < 300 K) and field dependences (in magnetic fields as high as 6 T) of the sample resistances are measured. Anisotropy of the resistances in different crystallographic directions is detected; this anisotropy depends on the substrate orientation and construction of the metamorphic buffer layer. In addition, the Hall effect and the Shubnikov–de Haas effect are studied. The Shubnikov–de Haas effect is used to determine the mobilities of electrons separately in several occupied dimensionally quantized subbands in different crystallographic directions. The calculated anisotropy of mobilities is in agreement with experimental data on the anisotropy of the resistances.

  19. Angular distribution of polarized light and its effect on light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes.

    PubMed

    Chen, Xinjuan; Ji, Cheng; Xiang, Yong; Kang, Xiangning; Shen, Bo; Yu, Tongjun

    2016-05-16

    Angular distribution of polarized light and its effect on light extraction efficiency (LEE) in AlGaN deep-ultraviolet (DUV) light-emitting diodes (LEDs) are investigated in this paper. A united picture is presented to describe polarized light's emission and propagation processes. It is found that the electron-hole recombinations in AlGaN multiple quantum wells produce three kinds of angularly distributed polarized emissions and propagation process can change their intensity distributions. By investigation the change of angular distributions in 277nm and 215nm LEDs, this work reveals that LEE can be significantly enhanced by modulating the angular distributions of polarized light of DUV LEDs.

  20. Oracle Log Buffer Queueing

    SciTech Connect

    Rivenes, A S

    2004-12-08

    The purpose of this document is to investigate Oracle database log buffer queuing and its affect on the ability to load data using a specialized data loading system. Experiments were carried out on a Linux system using an Oracle 9.2 database. Previous experiments on a Sun 4800 running Solaris had shown that 100,000 entities per minute was an achievable rate. The question was then asked, can we do this on Linux, and where are the bottlenecks? A secondary question was also lurking, how can the loading be further scaled to handle even higher throughput requirements? Testing was conducted using a Dell PowerEdge 6650 server with four CPUs and a Dell PowerVault 220s RAID array with 14 36GB drives and 128 MB of cache. Oracle Enterprise Edition 9.2.0.4 was used for the database and Red Hat Linux Advanced Server 2.1 was used for the operating system. This document will detail the maximum observed throughputs using the same test suite that was used for the Sun tests. A detailed description of the testing performed along with an analysis of bottlenecks encountered will be made. Issues related to Oracle and Linux will also be detailed and some recommendations based on the findings.