Electron mobility enhancement in metalorganic-vapor-phase-epitaxy-grown InAlN high-electron-mobility transistors by control of surface morphology of spacer layer

NASA Astrophysics Data System (ADS)

Yamada, Atsushi; Ishiguro, Tetsuro; Kotani, Junji; Nakamura, Norikazu

2018-01-01

We demonstrated low-sheet-resistance metalorganic-vapor-phase-epitaxy-grown InAlN high-electron-mobility transistors using AlGaN spacers with excellent surface morphology. We systematically investigated the effects of AlGaN spacer growth conditions on surface morphology and electron mobility. We found that the surface morphology of InAlN barriers depends on that of AlGaN spacers. Ga desorption from AlGaN spacers was suppressed by increasing the trimethylaluminum (TMA) supply rate, resulting in the small surface roughnesses of InAlN barriers and AlGaN spacers. Moreover, we found that an increase in the NH3 supply rate also improved the surface morphologies of InAlN barriers and AlGaN spacers as long as the TMA supply rate was high enough to suppress the degradation of GaN channels. Finally, we realized a low sheet resistance of 185.5 Ω/sq with a high electron mobility of 1210 cm2 V-1 s-1 by improving the surface morphologies of AlGaN spacers and InAlN barriers.

Growth and Implementation of Carbon-Doped AlGaN Layers for Enhancement-Mode HEMTs on 200 mm Si Substrates

NASA Astrophysics Data System (ADS)

Su, Jie; Posthuma, Niels; Wellekens, Dirk; Saripalli, Yoga N.; Decoutere, Stefaan; Arif, Ronald; Papasouliotis, George D.

2016-12-01

We are reporting the growth of AlGaN based enhancement-mode high electron mobility transistors (HEMTs) on 200 mm silicon (111) substrates using a single wafer metalorganic chemical vapor deposition reactor. It is found that TMAl pre-dosing conditions are critical in controlling the structural quality, surface morphology, and wafer bow of the HEMT stack. Optimal structural quality and pit-free surface are demonstrated for AlGaN HEMTs with pre-dosing temperature at 750°C. Intrinsically, carbon-doped AlGaN, is used as the current blocking layer in the HEMT structures. The lateral buffer breakdown and device breakdown characteristics, reach 400 V at a leakage current of 1 μA/mm measured at 150°C. The fabricated HEMT devices, with a Mg doped p-GaN gate layer, are operating in enhancement mode reaching a positive threshold voltage of 2-2.5 V, a low on-resistance of 10.5 Ω mm with a high drain saturation current of 0.35 A/mm, and a low forward bias gate leakage current of 0.5 × 10-6 A/mm ( V gs = 7 V). Tight distribution of device parameters across the 200 mm wafers and over repeat process runs is observed.

Cathodoluminescence study on local high-energy emissions at dark spots in AlGaN/AlGaN multiple quantum wells

NASA Astrophysics Data System (ADS)

Kurai, Satoshi; Imura, Nobuto; Jin, Li; Miyake, Hideto; Hiramatsu, Kazumasa; Yamada, Yoichi

2018-06-01

We investigated the spatial distribution of luminescence near threading dislocations in AlGaN/AlGaN multiple quantum wells (MQWs) by cathodoluminescence mapping. Emission at the higher-energy side of the AlGaN MQW peak was locally observed near the threading dislocations, which were not accompanied by any surface V-pits. Such higher-energy emission was not observed in the AlGaN epilayers. The energy difference between the AlGaN MQW peak and the higher-energy emission peak increased with increasing barrier-layer Al composition. These results suggest that the origin of the higher-energy emission is likely local thickness fluctuation around dislocations in very thin AlGaN MQWs.

Self-terminated etching of GaN with a high selectivity over AlGaN under inductively coupled Cl2/N2/O2 plasma with a low-energy ion bombardment

NASA Astrophysics Data System (ADS)

Zhong, Yaozong; Zhou, Yu; Gao, Hongwei; Dai, Shujun; He, Junlei; Feng, Meixin; Sun, Qian; Zhang, Jijun; Zhao, Yanfei; DingSun, An; Yang, Hui

2017-10-01

Etching of GaN/AlGaN heterostructure by O-containing inductively coupled Cl2/N2 plasma with a low-energy ion bombardment can be self-terminated at the surface of the AlGaN layer. The estimated etching rates of GaN and AlGaN were 42 and 0.6 nm/min, respectively, giving a selective etching ratio of 70:1. To study the mechanism of the etching self-termination, detailed characterization and analyses were carried out, including X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectroscopy (TOF-SIMS). It was found that in the presence of oxygen, the top surface of the AlGaN layer was converted into a thin film of (Al,Ga)Ox with a high bonding energy, which effectively prevented the underlying atoms from a further etching, resulting in a nearly self-terminated etching. This technique enables a uniform and reproducible fabrication process for enhancement-mode high electron mobility transistors with a p-GaN gate.

AlGaN/GaN heterostructures with an AlGaN layer grown directly on reactive-ion-etched GaN showing a high electron mobility (>1300 cm2 V-1 s-1)

NASA Astrophysics Data System (ADS)

Yamamoto, Akio; Makino, Shinya; Kanatani, Keito; Kuzuhara, Masaaki

2018-04-01

In this study, the metal-organic-vapor-phase-epitaxial growth behavior and electrical properties of AlGaN/GaN structures prepared by the growth of an AlGaN layer on a reactive-ion-etched (RIE) GaN surface without regrown GaN layers were investigated. The annealing of RIE-GaN surfaces in NH3 + H2 atmosphere, employed immediately before AlGaN growth, was a key process in obtaining a clean GaN surface for AlGaN growth, that is, in obtaining an electron mobility as high as 1350 cm2 V-1 s-1 in a fabricated AlGaN/RIE-GaN structure. High-electron-mobility transistors (HEMTs) were successfully fabricated with AlGaN/RIE-GaN wafers. With decreasing density of dotlike defects observed on the surfaces of AlGaN/RIE-GaN wafers, both two-dimensional electron gas properties of AlGaN/RIE-GaN structures and DC characteristics of HEMTs were markedly improved. Since dotlike defect density was markedly dependent on RIE lot, rather than on growth lot, surface contaminations of GaN during RIE were believed to be responsible for the formation of dotlike defects and, therefore, for the inferior electrical properties.

Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters.

PubMed

Zhao, Chao; Ebaid, Mohamed; Zhang, Huafan; Priante, Davide; Janjua, Bilal; Zhang, Daliang; Wei, Nini; Alhamoud, Abdullah A; Shakfa, Mohammad Khaled; Ng, Tien Khee; Ooi, Boon S

2018-06-13

p-Type doping in wide bandgap and new classes of ultra-wide bandgap materials has long been a scientific and engineering problem. The challenges arise from the large activation energy of dopants and high densities of dislocations in materials. We report here, a significantly enhanced p-type conduction using high-quality AlGaN nanowires. For the first time, the hole concentration in Mg-doped AlGaN nanowires is quantified. The incorporation of Mg into AlGaN was verified by correlation with photoluminescence and Raman measurements. The open-circuit potential measurements further confirmed the p-type conductivity, while Mott-Schottky experiments measured a hole concentration of 1.3 × 1019 cm-3. These results from photoelectrochemical measurements allow us to design prototype ultraviolet (UV) light-emitting diodes (LEDs) incorporating the AlGaN quantum-disks-in-nanowire and an optimized p-type AlGaN contact layer for UV-transparency. The ∼335 nm LEDs exhibited a low turn-on voltage of 5 V with a series resistance of 32 Ω, due to the efficient p-type doping of the AlGaN nanowires. The bias-dependent Raman measurements further revealed the negligible self-heating of devices. This study provides an attractive solution to evaluate the electrical properties of AlGaN, which is applicable to other wide bandgap nanostructures. Our results are expected to open doors to new applications for wide and ultra-wide bandgap materials.

Improving hole injection and carrier distribution in InGaN light-emitting diodes by removing the electron blocking layer and including a unique last quantum barrier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Liwen, E-mail: lwcheng@yzu.edu.cn; Chen, Haitao; Wu, Shudong

2015-08-28

The effects of removing the AlGaN electron blocking layer (EBL), and using a last quantum barrier (LQB) with a unique design in conventional blue InGaN light-emitting diodes (LEDs), were investigated through simulations. Compared with the conventional LED design that contained a GaN LQB and an AlGaN EBL, the LED that contained an AlGaN LQB with a graded-composition and no EBL exhibited enhanced optical performance and less efficiency droop. This effect was caused by an enhanced electron confinement and hole injection efficiency. Furthermore, when the AlGaN LQB was replaced with a triangular graded-composition, the performance improved further and the efficiency droopmore » was lowered. The simulation results indicated that the enhanced hole injection efficiency and uniform distribution of carriers observed in the quantum wells were caused by the smoothing and thinning of the potential barrier for the holes. This allowed a greater number of holes to tunnel into the quantum wells from the p-type regions in the proposed LED structure.« less

Measurement and simulation of top- and bottom-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors with high external quantum efficiencies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brendel, Moritz, E-mail: moritz.brendel@fbh-berlin.de; Helbling, Markus; Knigge, Andrea

2015-12-28

A comprehensive study on top- and bottom-illuminated Al{sub 0.5}Ga{sub 0.5}N/AlN metal-semiconductor-metal (MSM) photodetectors having different AlGaN absorber layer thickness is presented. The measured external quantum efficiency (EQE) shows pronounced threshold and saturation behavior as a function of applied bias voltage up to 50 V reaching about 50% for 0.1 μm and 67% for 0.5 μm thick absorber layers under bottom illumination. All experimental findings are in very good accordance with two-dimensional drift-diffusion modeling results. By taking into account macroscopic polarization effects in the hexagonal metal-polar +c-plane AlGaN/AlN heterostructures, new insights into the general device functionality of AlGaN-based MSM photodetectors are obtained. The observedmore » threshold/saturation behavior is caused by a bias-dependent extraction of photoexcited holes from the Al{sub 0.5}Ga{sub 0.5}N/AlN interface. While present under bottom illumination for any AlGaN layer thickness, under top illumination this mechanism influences the EQE-bias characteristics only for thin layers.« less

Determination of the strain distribution for the Si3N4 passivated AlGaN/AlN/GaN heterostructure field-effect transistors

NASA Astrophysics Data System (ADS)

Fu, Chen; Lin, Zhaojun; Liu, Yan; Cui, Peng; Lv, Yuanjie; Zhou, Yang; Dai, Gang; Luan, Chongbiao

2017-11-01

A method to determine the strain distribution of the AlGaN barrier layer after the device fabrication and the passivation process has been presented. By fitting the calculated parasitic source access resistance with the measured ones for the AlGaN/AlN/GaN HFETs and using the polarization Coulomb field scattering theory, the strain variation of the AlGaN barrier layer after the passivation process has been quantitatively studied. The results show that the tensile strain in the access regions of the AlGaN barrier layer has been increased by 4.62% for the 250 nm-Si3N4 passivated device, and has been decreased by 2.0% for the 400 nm-Si3N4 passivated device, compared to that of before the passivation, respectively. For the gate region of the two devices, the tensile strain has been decreased by 60.77% and increased by 3.60% after the passivation of different thicknesses, oppositely.

Status of AlGaN based focal plane array for near UV imaging and strategy to extend this technology to far-UV by substrate removal

NASA Astrophysics Data System (ADS)

Reverchon, Jean-Luc; Gourdel, Yves; Robo, Jean-Alexandre; Truffer, Jean-Patrick; Costard, Eric; Brault, Julien; Duboz, Jean-Yves

2017-11-01

The fast development of nitrides has given the opportunity to investigate AlGaN as a material for ultraviolet detection. Such AlGaN based camera presents an intrinsic spectral selectivity and an extremely low dark current at room temperature. Firstly, we will present results on focal plane array of 320x256 pixels with a pitch of 30μm. The peak responsivity is around 280nm (solar-blind), 310nm and 360nm. These results are obtained in a standard SWIR supply chain (readout circuit, electronics). With the existing near-UV camera grown on sapphire, the short wavelength cutoff is due to a window layer improving the material quality of the active layer. The ultimate shortest wavelength would be 200nm due to sapphire substrate. We present here the ways to transfer the standard design of Schottky photodiodes from sapphire to silicon substrate. We will show the capability to remove the silicon substrate, and etch the window layer in order to extend the band width to lower wavelengths.

Comparative research on the influence of varied Al component on the active layer of AlGaN photocathode

NASA Astrophysics Data System (ADS)

He, Minyou; Chen, Liang; Su, Lingai; Yin, Lin; Qian, Yunsheng

2017-06-01

To theoretically research the influence of a varied Al component on the active layer of AlGaN photocathodes, the first principle based on density functional theory is used to calculate the formation energy and band structure of Al x Ga1-x N with x at 0, 0.125, 0.25, 0.325, and 0.5. The calculation results show that the formation energy declines along with the Al component rise, while the band gap is increasing with Al component increasing. Al x Ga1-x N with x at 0, 0.125, 0.25, 0.325, and 0.5 are direct band gap semiconductors, and their absorption coefficient curves have the same variation tendency. For further study, we designed two kinds of reflection-mode AlGaN photocathode samples. Sample 1 has an Al x Ga1-x N active layer with varied Al component ranging from 0.5 to 0 and decreasing from the bulk to the surface, while sample 2 has an Al x Ga1-x N active layer with the fixed Al component of 0.25. Using the multi-information measurement system, we measured the spectral response of the activated samples at room temperature. Their photocathode parameters were obtained by fitting quantum efficiency curves. Results show that sample 1 has a better spectral response than sample 2 at the range of short-wavelength. This work provides a reference for the structure design of the AlGaN photocathode. Project supported by the National Natural Science Foundation of China (Nos. 61308089, 6144005) and the Public Technology Applied Research Project of Zhejiang Province (No. 2013C31068).

Advanced in-situ control for III-nitride RF power device epitaxy

NASA Astrophysics Data System (ADS)

Brunner, F.; Zettler, J.-T.; Weyers, M.

2018-04-01

In this contribution, the latest improvements regarding wafer temperature measurement on 4H-SiC substrates and, based on this, of film thickness and composition control of GaN and AlGaN layers in power electronic device structures are presented. Simultaneous pyrometry at different wavelengths (950 nm and 405 nm) reveal the advantages and limits of the different temperature measurement approaches. Near-UV pyrometry gives a very stable wafer temperature signal without oscillations during GaN growth since the semi-insulating 4H-SiC substrate material becomes opaque at temperatures above 550 °C at the wavelength of 405 nm. A flat wafer temperature profile across the 100 mm substrate diameter is demonstrated despite a convex wafer shape at AlGaN growth conditions. Based on the precise assignment of wafer temperature during MOVPE we were able to improve the accuracy of the high-temperature n-k database for the materials involved. Consequently, the measurement accuracy of all film thicknesses grown under fixed temperature conditions improved. Comparison of in situ and ex situ determined layer thicknessess indicate an unintended etching of the topmost layer during cool-down. The details and limitations of real-time composition analysis for lower Al-content AlGaN barrier layers during transistor device epitaxy are shown.

Effects of two-step Mg doping in p-GaN on efficiency characteristics of InGaN blue light-emitting diodes without AlGaN electron-blocking layers

NASA Astrophysics Data System (ADS)

Ryu, Han-Youl; Lee, Jong-Moo

2013-05-01

A light-emitting diode (LED) structure containing p-type GaN layers with two-step Mg doping profiles is proposed to achieve high-efficiency performance in InGaN-based blue LEDs without any AlGaN electron-blocking-layer structures. Photoluminescence and electroluminescence (EL) measurement results show that, as the hole concentration in the p-GaN interlayer between active region and the p-GaN layer increases, defect-related nonradiative recombination increases, while the electron current leakage decreases. Under a certain hole-concentration condition in the p-GaN interlayer, the electron leakage and active region degradation are optimized so that high EL efficiency can be achieved. The measured efficiency characteristics are analyzed and interpreted using numerical simulations.

Defect characterization of MOCVD grown AlN/AlGaN films on sapphire substrates by TEM and TKD

NASA Astrophysics Data System (ADS)

O'Connell, J. H.; Lee, M. E.; Westraadt, J.; Engelbrecht, J. A. A.

2018-04-01

High resolution transmission electron microscopy (TEM) has been used to characterize defects structures in AlN/AlGaN epilayers grown by metal-organic chemical vapour deposition (MOCVD) on c-plane sapphire (Al2O3) substrates. The AlN buffer layer was shown to be epitaxially grown on the sapphire substrate with the two lattices rotated relatively through 30°. The AlN layer had a measured thickness of 20-30 nm and was also shown to contain nano-sized voids. The misfit dislocations in the buffer layer have been shown to be pure edge with a spacing of 1.5 nm. TEM characterization of the AlGaN epilayers was shown to contain a higher than expected threading dislocation density of the order 1010 cm-2 as well as the existence of "nanopipes". TEM analysis of the planar lamella for AlGaN has presented evidence for the possibility of columnar growth. The strain and misorientation mapping in the AlGaN epilayer by transmission Kikuchi diffraction (TKD) using the FIB lamella has also been demonstrated to be complimentary to data obtained by TEM imaging.

Spectral response characteristics of the transmission-mode aluminum gallium nitride photocathode with varying aluminum composition.

PubMed

Hao, Guanghui; Liu, Junle; Ke, Senlin

2017-12-10

In order to research spectral response characteristics of transmission-mode nanostructure aluminum gallium nitride (AlGaN) photocathodes, the AlGaN photocathodes materials with varied aluminum (Al) composition were grown by metalorganic chemical vapor deposition (MOCVD) and its optical properties were measured. The Al compositions of each AlGaN film of the photocathodes were analyzed from their adsorption properties curves; their thickness was also calculated by the matrix formula of thin-film optics. The nanostructure AlGaN photocathodes were activated with the Caesium-Oxygen (Cs-O) alternation, and after the photocathode was packaged in vacuum, their spectrum responses were measured. The experimental results showed that the trend of spectrum response curves first increased and then decreased along with the increasing of the incident light wavelength. The peak spectrum response value was 17.5 mA/W at 255 nm, and its quantum efficiency was 8.5%. The lattice defects near the interface of the AlGaN heterostructure could impede the electron motion crossing this region and moving toward the photocathode surface; this was a factor that reduces the electron emission performance of the photocathodes. Also, the experimental result showed that the thickness of each AlGaN layer affected the electron diffusion characteristics; this was a key factor that influenced the spectrum response performance.

Reduction of Defects in AlGaN Grown on Nanoscale-Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy

PubMed Central

Tasi, Chi-Tsung; Wang, Wei-Kai; Tsai, Tsung-Yen; Huang, Shih-Yung; Horng, Ray-Hua; Wuu, Dong-Sing

2017-01-01

In this study, a 3-μm-thick AlGaN film with an Al mole fraction of 10% was grown on a nanoscale-patterned sapphire substrate (NPSS) using hydride vapor phase epitaxy (HVPE). The growth mechanism, crystallization, and surface morphology of the epilayers were examined using X-ray diffraction, transmission electron microscopy (TEM), and scanning electron microscopy at various times in the growth process. The screw threading dislocation (TD) density of AlGaN-on-NPSS can improve to 1–2 × 109 cm−2, which is significantly lower than that of the sample grown on a conventional planar sapphire substrate (7 × 109 cm−2). TEM analysis indicated that these TDs do not subsequently propagate to the surface of the overgrown AlGaN layer, but bend or change directions in the region above the voids within the side faces of the patterned substrates, possibly because of the internal stress-relaxed morphologies of the AlGaN film. Hence, the laterally overgrown AlGaN films were obtained by HVPE, which can serve as a template for the growth of ultraviolet III-nitride optoelectronic devices. PMID:28772961

Reduction of Defects in AlGaN Grown on Nanoscale-Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy.

PubMed

Tasi, Chi-Tsung; Wang, Wei-Kai; Tsai, Tsung-Yen; Huang, Shih-Yung; Horng, Ray-Hua; Wuu, Dong-Sing

2017-05-31

In this study, a 3-μm-thick AlGaN film with an Al mole fraction of 10% was grown on a nanoscale-patterned sapphire substrate (NPSS) using hydride vapor phase epitaxy (HVPE). The growth mechanism, crystallization, and surface morphology of the epilayers were examined using X-ray diffraction, transmission electron microscopy (TEM), and scanning electron microscopy at various times in the growth process. The screw threading dislocation (TD) density of AlGaN-on-NPSS can improve to 1-2 × 10⁸ cm -2 , which is significantly lower than that of the sample grown on a conventional planar sapphire substrate (7 × 10⁸ cm -2 ). TEM analysis indicated that these TDs do not subsequently propagate to the surface of the overgrown AlGaN layer, but bend or change directions in the region above the voids within the side faces of the patterned substrates, possibly because of the internal stress-relaxed morphologies of the AlGaN film. Hence, the laterally overgrown AlGaN films were obtained by HVPE, which can serve as a template for the growth of ultraviolet III-nitride optoelectronic devices.

Research on microstructure properties of the TiC/Ni-Fe-Al coating prepared by laser cladding technology

NASA Astrophysics Data System (ADS)

Jiao, Junke; Xu, Zifa; Zan, Shaoping; Zhang, Wenwu; Sheng, Liyuan

2017-10-01

In this paper, the laser cladding method was used to preparation the TiC reinforced Ni-Fe-Al coating on the Ni base superalloy. The Ti/Ni-Fe-Al powder was preset on the Ni base superalloy and the powder layer thickness is 0.5mm. A fiber laser was used the melting Ti/Ni-Fe-Al powder in an inert gas environment. The shape of the cladding layer was tested using laser scanning confocal microscope (LSCM) under different cladding parameters such as the laser power, the melting velocity and the defocused amount. The microstructure, the micro-hardness was tested by LSCM, SEM, Vickers hardness tester. The test result showed that the TiC particles was distributed uniformly in the cladding layer and hardness of the cladding layer was improved from 180HV to 320HV compared with the Ni-Fe-Al cladding layer without TiC powder reinforced, and a metallurgical bonding was produced between the cladding layer and the base metal. The TiC powder could make the Ni-Fe-Al cladding layer grain refining, and the more TiC powder added in the Ni-Fe-Al powder, the smaller grain size was in the cladding layer.

Research on Microstructure and Property of TiC-Co Composite Material Made by Laser Cladding

NASA Astrophysics Data System (ADS)

Zhang, Wei

The experiment of laser cladding on the surface of 2Cr13 steel was made. Titanium carbide (TiC) powder and Co-base alloy powder were used as cladding material. The microstructure and property of laser cladding layer were tested. The research showed that laser cladding layer had better properties such as minute crystals, deeper layer, higher hardness and good metallurgical bonding with base metal. The structure of cladding was supersaturated solid solution with dispersed titanium carbide. The average hardness of cladding zone was 660HV0.2. 2Cr13 steel was widely used in the field of turbine blades. Using laser cladding, the good wear layer would greatly increase the useful life of turbine blades.

Formation of anomalous eutectic in Ni-Sn alloy by laser cladding

NASA Astrophysics Data System (ADS)

Wang, Zhitai; Lin, Xin; Cao, Yongqing; Liu, Fencheng; Huang, Weidong

2018-02-01

Ni-Sn anomalous eutectic is obtained by single track laser cladding with the scanning velocity from 1 mm/s to 10 mm/s using the Ni-32.5 wt.%Sn eutectic powders. The microstructure of the cladding layer and the grain orientations of anomalous eutectic were investigated. It is found that the microstructure is transformed from primary α-Ni dendrites and the interdendritic (α-Ni + Ni3Sn) eutectic at the bottom of the cladding layer to α-Ni and β-Ni3Sn anomalous eutectic at the top of the cladding layer, whether for single layer or multilayer laser cladding. The EBSD maps and pole figures indicate that the spatially structure of α-Ni phase is discontinuous and the Ni3Sn phase is continuous in anomalous eutectic. The transformation from epitaxial growth columnar at bottom of cladding layer to free nucleation equiaxed at the top occurs, i.e., the columnar to equiaxed transition (CET) at the top of cladding layer during laser cladding processing leads to the generation of anomalous eutectic.

Strengthening Effect of Incremental Shear Deformation on Ti Alloy Clad Plate with a Ni-Based Alloy Laser-Clad Layer

NASA Astrophysics Data System (ADS)

Zhao, W.; Zha, G. C.; Kong, F. X.; Wu, M. L.; Feng, X.; Gao, S. Y.

2017-05-01

A Ti-6Al-4V alloy clad plate with a Tribaloy 700 alloy laser-clad layer is subjected to incremental shear deformation, and we evaluate the structural evolution and mechanical properties of the specimens. Results indicate the significance of the incremental shear deformation on the strengthening effect. The wear resistance and Vickers hardness of the laser-clad layer are enhanced due to increased dislocation density. The incremental shear deformation can increase the bonding strength of the laser-clad layer and the corresponding substrate and can break the columnar crystals in the laser-clad layer near the interface. These phenomena suggest that shear deformation eliminates the defects on the interface of the laser-clad layer and the substrate. Substrate hardness is evidently improved, and the strengthening effect is caused by the increased dislocation density and shear deformation. This deformation can then transform the α- and β-phases in the substrate into a high-intensity ω-phase.

Microstructure and mechanical properties of hot wire laser clad layers for repairing precipitation hardening martensitic stainless steel

NASA Astrophysics Data System (ADS)

Wen, Peng; Cai, Zhipeng; Feng, Zhenhua; Wang, Gang

2015-12-01

Precipitation hardening martensitic stainless steel (PH-MSS) is widely used as load-bearing parts because of its excellent overall properties. It is economical and flexible to repair the failure parts instead of changing new ones. However, it is difficult to keep properties of repaired part as good as those of the substrate. With preheating wire by resistance heat, hot wire laser cladding owns both merits of low heat input and high deposition efficiency, thus is regarded as an advantaged repairing technology for damaged parts of high value. Multi-pass layers were cladded on the surface of FV520B by hot wire laser cladding. The microstructure and mechanical properties were compared and analyzed for the substrate and the clad layer. For the as-cladded layer, microstructure was found non-uniform and divided into quenched and tempered regions. Tensile strength was almost equivalent to that of the substrate, while ductility and impact toughness deteriorated much. With using laser scanning layer by layer during laser cladding, microstructure of the clad layers was tempered to fine martensite uniformly. The ductility and toughness of the clad layer were improved to be equivalent to those of the substrate, while the tensile strength was a little lower than that of the substrate. By adding TiC nanoparticles as well as laser scanning, the precipitation strengthening effect was improved and the structure was refined in the clad layer. The strength, ductility and toughness were all improved further. Finally, high quality clad layers were obtained with equivalent or even superior mechanical properties to the substrate, offering a valuable technique to repair PH-MSS.

On the increased efficiency in InGaN-based multiple quantum wells emitting at 530-590 nm with AlGaN interlayers

NASA Astrophysics Data System (ADS)

Koleske, D. D.; Fischer, A. J.; Bryant, B. N.; Kotula, P. G.; Wierer, J. J.

2015-04-01

InGaN/AlGaN/GaN-based multiple quantum wells (MQWs) with AlGaN interlayers (ILs) are investigated, specifically to examine the fundamental mechanisms behind their increased radiative efficiency at wavelengths of 530-590 nm. The AlzGa1-zN (z 0.38) IL is 1-2 nm thick, and is grown after and at the same growth temperature as the 3 nm thick InGaN quantum well (QW). This is followed by an increase in temperature for the growth of a 10 nm thick GaN barrier layer. The insertion of the AlGaN IL within the MQW provides various benefits. First, the AlGaN IL allows for growth of the InxGa1-xN QW well below typical growth temperatures to achieve higher x (up to 0.25). Second, annealing the IL capped QW prior to the GaN barrier growth improves the AlGaN IL smoothness as determined by atomic force microscopy, improves the InGaN/AlGaN/GaN interface quality as determined from scanning transmission electron microscope images and x-ray diffraction, and increases the radiative efficiency by reducing non-radiative defects as determined by time-resolved photoluminescence measurements. Finally, the AlGaN IL increases the spontaneous and piezoelectric polarization induced electric fields acting on the InGaN QW, providing an additional red-shift to the emission wavelength as determined by Schrodinger-Poisson modeling and fitting to the experimental data. The relative impact of increased indium concentration and polarization fields on the radiative efficiency of MQWs with AlGaN ILs is explored along with implications to conventional longer wavelength emitters.

Multi-clad black display panel

DOEpatents

Veligdan, James T.; Biscardi, Cyrus; Brewster, Calvin

2002-01-01

A multi-clad black display panel, and a method of making a multi-clad black display panel, are disclosed, wherein a plurality of waveguides, each of which includes a light-transmissive core placed between an opposing pair of transparent cladding layers and a black layer disposed between transparent cladding layers, are stacked together and sawed at an angle to produce a wedge-shaped optical panel having an inlet face and an outlet face.

Microstructure and properties of Fe-based composite coating by laser cladding Fe-Ti-V-Cr-C-CeO2 powder

NASA Astrophysics Data System (ADS)

Zhang, Hui; Zou, Yong; Zou, Zengda; Wu, Dongting

2015-01-01

In situ TiC-VC reinforced Fe-based cladding layer was obtained on low carbon steel surface by laser cladding with Fe-Ti-V-Cr-C-CeO2 alloy powder. The microstructure, phases and properties of the cladding layer were investigated by X-ray diffractometry (XRD), scanning electron microscopy (SEM), energy dispersive spectrometry (EDS), transmission electron microscopy (TEM), potentio-dynamic polarization and electro-chemical impedance spectroscopy (EIS). Results showed Fe-Ti-V-Cr-C-CeO2 alloy powder formed a good cladding layer without defects such as cracks and pores. The phases of the cladding layer were α-Fe, γ-Fe, TiC, VC and TiVC2. The microstructures of the cladding layer matrix were lath martensite and retained austenite. The carbides were polygonal blocks with a size of 0.5-2 μm and distributed uniformly in the cladding layer. High resolution transmission electron microscopy showed the carbide was a complex matter composed of nano TiC, VC and TiVC2. The cladding layer with a hardness of 1030 HV0.2 possessed good wear and corrosion resistance, which was about 16.85 and 9.06 times than that of the substrate respectively.

Suppression of dilution in Ni-Cr-Si-B alloy cladding layer by controlling diode laser beam profile

NASA Astrophysics Data System (ADS)

Tanigawa, Daichi; Funada, Yoshinori; Abe, Nobuyuki; Tsukamoto, Masahiro; Hayashi, Yoshihiko; Yamazaki, Hiroyuki; Tatsumi, Yoshihiro; Yoneyama, Mikio

2018-02-01

A Ni-Cr-Si-B alloy layer was produced on a type 304 stainless steel plate by laser cladding. In order to produce cladding layer with smooth surface and low dilution, influence of laser beam profile on cladding layer was investigated. A laser beam with a constant spatial intensity at the focus spot was used to suppress droplet formation during the cladding layer formation. This line spot, formed with a focussing unit designed by our group, suppressed droplet generation. The layer formed using this line spot with a constant spatial intensity had a much smoother surface compared to a layer formed using a line spot with a Gaussian-like beam. In addition, the dilution of the former layer was much smaller. These results indicated that a line spot with a constant spatial intensity was more effective in producing a cladding layer with smooth surface and low dilution because it suppressed droplet generation.

The Development of Ultraviolet Light Emitting Diodes on p-SiC Substrates

NASA Astrophysics Data System (ADS)

Brummer, Gordon

Ultraviolet (UV) light emitting diodes (LEDs) are promising light sources for purification, phototherapy, and resin curing applications. Currently, commercial UV LEDs are composed of AlGaN-based n-i-p junctions grown on sapphire substrates. These devices suffer from defects in the active region, inefficient p-type doping, and poor light extraction efficiency. This dissertation addresses the development of a novel UV LED device structure, grown on p-SiC substrates. In this device structure, the AlGaN-based intrinsic (i) and n-layers are grown directly on the p-type substrate, forming a p-i-n junction. The intrinsic layer (active region) is composed of an AlN buffer layer followed by three AlN/Al0.30Ga0.70N quantum wells. After the intrinsic layer, the n-layer is formed from n-type AlGaN. This device architecture addresses the deficiencies of UV LEDs on sapphire substrates while providing a vertical device geometry, reduced fabrication complexity, and improved thermal management. The device layers were grown by molecular beam epitaxy (MBE). The material properties were optimized by considering varying growth conditions and by considering the role of the layer within the device. AlN grown at 825 C and with a Ga surfactant yielded material with screw dislocation density of 1x10 7 cm-2 based on X-ray diffraction (XRD) analysis. AlGaN alloys grown in this work contained compositional inhomogeneity, as verified by high-resolution XRD, photoluminescence, and absorption measurements. Based on Stokes shift measurements, the degree of compositional inhomogeneity was correlated with the amount of excess Ga employed during growth. Compositional inhomogeneity yields carrier localizing potential fluctuations, which are advantages in light emitting device layers. Therefore, excess Ga growth conditions were used to grow AlN/Al0.30Ga0.70N quantum wells (designed using a wurtzite k.p model) with 35% internal quantum efficiency. Potential fluctuations limit the mobility of carriers and introduce sub-bandgap absorption, making them undesirable in the n-AlGaN layers. n-Al0.60Ga 0.40N grown under stoichiometric Ga flux and an In surfactant reduced the Stokes shift (compared to n-AlGaN grown without In) by 150 meV. However, even under these growth modes, some compositional inhomogeneity persisted which is speculatively attributed to the vicinal substrate. Device epitaxial layer stacks utilizing the optimum growth conditions were fabricated into prototype vertical UV LEDs which emit from 295-320 nm. In order to increase light extraction efficiency, UV distributed Bragg reflectors (DBRs) based on compositionally graded AlGaN alloys were designed using the transfer matrix method (TMM) and grown by MBE. DBRs were formed from repeated compositionally graded AlGaN alloys. This structure utilized the polarization doping and index of refraction variation of graded composition AlGaN. DBRs with square wave, sinusoidal, triangular, and sawtooth compositional profiles were realized, with reflectivity peaks over 50%, centered at 280 nm.

Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer.

PubMed

Lin, Bing-Chen; Chen, Kuo-Ju; Wang, Chao-Hsun; Chiu, Ching-Hsueh; Lan, Yu-Pin; Lin, Chien-Chung; Lee, Po-Tsung; Shih, Min-Hsiung; Kuo, Yen-Kuang; Kuo, Hao-Chung

2014-01-13

A tapered AlGaN electron blocking layer with step-graded aluminum composition is analyzed in nitride-based blue light-emitting diode (LED) numerically and experimentally. The energy band diagrams, electrostatic fields, carrier concentration, electron current density profiles, and hole transmitting probability are investigated. The simulation results demonstrated that such tapered structure can effectively enhance the hole injection efficiency as well as the electron confinement. Consequently, the LED with a tapered EBL grown by metal-organic chemical vapor deposition exhibits reduced efficiency droop behavior of 29% as compared with 44% for original LED, which reflects the improvement in hole injection and electron overflow in our design.

Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih

Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and the light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polarization engineered tunnel junctions for ultra-wide bandgap AlGaN (Al mole fraction >50%) materials towards highly efficient UV LEDs. We demonstrate that polarization-induced three dimensional charge is beneficial in reducing tunneling barriers especially for high composition AlGaN tunnel junctions. In addition, the design of graded tunnel junction structures could lead to low tunneling resistance below 10 –3 Ω cm 2 and lowmore » voltage consumption below 1 V (at 1 kA/cm 2) for high composition AlGaN tunnel junctions. Experimental demonstration of 292 nm emission was achieved through non-equilibrium hole injection into wide bandgap materials with bandgap energy larger than 4.7 eV, and detailed modeling of tunnel junctions shows that they can be engineered to have low resistance and can enable efficient emitters in the UV-C wavelength range.« less

Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

DOE PAGES

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; ...

2016-09-19

Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and the light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polarization engineered tunnel junctions for ultra-wide bandgap AlGaN (Al mole fraction >50%) materials towards highly efficient UV LEDs. We demonstrate that polarization-induced three dimensional charge is beneficial in reducing tunneling barriers especially for high composition AlGaN tunnel junctions. In addition, the design of graded tunnel junction structures could lead to low tunneling resistance below 10 –3 Ω cm 2 and lowmore » voltage consumption below 1 V (at 1 kA/cm 2) for high composition AlGaN tunnel junctions. Experimental demonstration of 292 nm emission was achieved through non-equilibrium hole injection into wide bandgap materials with bandgap energy larger than 4.7 eV, and detailed modeling of tunnel junctions shows that they can be engineered to have low resistance and can enable efficient emitters in the UV-C wavelength range.« less

Fabrication and characterization of AlN metal-insulator-semiconductor grown Si substrate

NASA Astrophysics Data System (ADS)

Mahyuddin, A.; Azrina, A.; Mohd Yusoff, M. Z.; Hassan, Z.

2017-11-01

An experimental investigation was conducted to explore the effect of inserting a single AlGaN interlayer between AlN epilayer and GaN/AlN heterostructures on Si (111) grown by molecular beam epitaxy (MBE). It is confirmed from the scanning electron microscopy (SEM) that the AlGaN interlayer has a remarkable effect on reducing the tensile stress and dislocation density in AlN top layer. Capacitance-voltage (C-V) measurements were conducted to study the electrical properties of AlN/GaN heterostructures. While deriving the findings through the calculation it is suggested that the AlGaN interlayer can significantly reduce the value of effective oxide charge density and total effective number of charges per unit area which are 1.37 × 10-6C/cm2 and 8.55 × 1012cm-2, respectively.

Inductively coupled BCl 3/Cl 2 /Ar plasma etching of Al-rich AlGaN

DOE PAGES

Douglas, Erica A.; Sanchez, Carlos A.; Kaplar, Robert J.; ...

2016-12-01

Varying atomic ratios in compound semiconductors is well known to have large effects on the etching properties of the material. The use of thin device barrier layers, down to 25 nm, adds to the fabrication complexity by requiring precise control over etch rates and surface morphology. The effects of bias power and gas ratio of BCl 3 to Cl 2 for inductively coupled plasma etching of high Al content AlGaN were contrasted with AlN in this study for etch rate, selectivity, and surface morphology. Etch rates were greatly affected by both bias power and gas chemistry. Here we detail themore » effects of small variations in Al composition for AlGaN and show substantial changes in etch rate with regards to bias power as compared to AlN.« less

Effects of surface passivation dielectrics on carrier transport in AlGaN/GaN heterostructure field-effect transistors

NASA Astrophysics Data System (ADS)

Oh, Sejoon; Jang, Han-Soo; Choi, Chel-Jong; Cho, Jaehee

2018-04-01

Dielectric layers prepared by different deposition methods were used for the surface passivation of AlGaN/GaN heterostructure field-effect transistors (HFETs) and the corresponding electrical characteristics were examined. Increases in the sheet charge density and the maximum drain current by approximately 45% and 28%, respectively, were observed after the deposition of a 100 nm-thick SiO2 layer by plasma-enhanced chemical vapor deposition (PECVD) on the top of the AlGaN/GaN HFETs. However, SiO2 deposited by a radio frequency (rf) sputter system had the opposite effect. As the strain applied to AlGaN was influenced by the deposition methods used for the dielectric layers, the carrier transport in the two-dimensional electron gas formed at the interface between AlGaN and GaN was affected accordingly.

AlGaN channel field effect transistors with graded heterostructure ohmic contacts

NASA Astrophysics Data System (ADS)

Bajaj, Sanyam; Akyol, Fatih; Krishnamoorthy, Sriram; Zhang, Yuewei; Rajan, Siddharth

2016-09-01

We report on ultra-wide bandgap (UWBG) Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistors (MISFETs) with heterostructure engineered low-resistance ohmic contacts. The low intrinsic electron affinity of AlN (0.6 eV) leads to large Schottky barriers at the metal-AlGaN interface, resulting in highly resistive ohmic contacts. In this work, we use a reverse compositional graded n++ AlGaN contact layer to achieve upward electron affinity grading, leading to a low specific contact resistance (ρsp) of 1.9 × 10-6 Ω cm2 to n-Al0.75Ga0.25N channels (bandgap ˜5.3 eV) with non-alloyed contacts. We also demonstrate UWBG Al0.75Ga0.25N channel MISFET device operation employing the compositional graded n++ ohmic contact layer and 20 nm atomic layer deposited Al2O3 as the gate-dielectric.

Semi-polar (11-22) AlGaN on overgrown GaN on micro-rod templates: Simultaneous management of crystal quality improvement and cracking issue

NASA Astrophysics Data System (ADS)

Li, Z.; Jiu, L.; Gong, Y.; Wang, L.; Zhang, Y.; Bai, J.; Wang, T.

2017-02-01

Thick and crack-free semi-polar (11-22) AlGaN layers with various high Al compositions have been achieved by means of growth on the top of nearly but not yet fully coalesced GaN overgrown on micro-rod templates. The range of the Al composition of up to 55.7% was achieved, corresponding to an emission wavelength of up to 270 nm characterised by photoluminescence at room temperature. X-ray diffraction (XRD) measurements show greatly improved crystal quality as a result of lateral overgrowth compared to the AlGaN counterparts on standard planar substrates. The full width at half maximums of the XRD rocking curves measured along the [1-100]/[11-2-3] directions (the two typical orientations for characterizing the crystal quality of (11-22) AlGaN) are 0.2923°/0.2006° for 37.8% Al and 0.3825°/0.2064° for 55.7% Al, respectively, which have never been achieved previously. Our calculation based on reciprocal space mapping measurements has demonstrated significant strain relaxation in the AlGaN as a result of utilising the non-coalesced GaN underneath, contributing to the elimination of any cracks. The results presented have demonstrated that our overgrowth technique can effectively manage strain and improve crystal quality simultaneously.

Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al{sub 2}O{sub 3} in AlGaN/GaN high electron mobility transistors with normally off capability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Capriotti, M., E-mail: mattia.capriotti@tuwien.ac.at; Alexewicz, A.; Fleury, C.

2014-03-17

Using a generalized extraction method, the fixed charge density N{sub int} at the interface between in situ deposited SiN and 5 nm thick AlGaN barrier is evaluated by measurements of threshold voltage V{sub th} of an AlGaN/GaN metal insulator semiconductor high electron mobility transistor as a function of SiN thickness. The thickness of the originally deposited 50 nm thick SiN layer is reduced by dry etching. The extracted N{sub int} is in the order of the AlGaN polarization charge density. The total removal of the in situ SiN cap leads to a complete depletion of the channel region resulting in V{sub th} = +1 V.more » Fabrication of a gate stack with Al{sub 2}O{sub 3} as a second cap layer, deposited on top of the in situ SiN, is not introducing additional fixed charges at the SiN/Al{sub 2}O{sub 3} interface.« less

InGaN directional coupler made with a one-step etching technique

NASA Astrophysics Data System (ADS)

Gao, Xumin; Yuan, Jialei; Yang, Yongchao; Zhang, Shuai; Shi, Zheng; Li, Xin; Wang, Yongjin

2017-06-01

We propose, fabricate and characterize an on-chip integration of light source, InGaN waveguide, directional coupler and photodiode, in which AlGaN layers are used as top and bottom optical claddings to form an InGaN waveguide for guiding the in-plane emitted light from the InGaN/GaN multiple-quantum-well light-emitting diode (MQW-LED). The difference in etch rate caused by different exposure windows leads to an etching depth discrepancy using the one-step etching technique, which forms the InGaN directional coupler with the overlapped underlying slab. Light propagation results directly confirm effective light coupling in the InGaN directional coupler, which is achieved through high-order guided modes. The InGaN waveguide couples the modulated light from the InGaN/GaN MQW-LED and transfers part of light to the coupled waveguide via the InGaN directional coupler. The in-plane InGaN/GaN MQW-photodiode absorbs the guided light by the coupled InGaN waveguide and induces the photocurrent. The on-chip InGaN photonic integration experimentally demonstrates an in-plane light communication with a data transmission of 50 Mbps.

Ternary AlGaN Alloys with High Al Content and Enhanced Compositional Homogeneity Grown by Plasma-Assisted Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Fellmann, Vincent; Jaffrennou, Périne; Sam-Giao, Diane; Gayral, Bruno; Lorenz, Katharina; Alves, Eduardo; Daudin, Bruno

2011-03-01

We have studied the influence of III/N flux ratio and growth temperature on structural and optical properties of high Al-content, around 50-60%, AlGaN alloy layers grown by plasma-assisted molecular beam epitaxy. In a first part, based on structural analysis by Rutherford Backscattering Spectroscopy, we establish that a III/N flux ratio slightly above 1 produces layers with low amount of structural defects. In a second part, we study the effect of growth temperature on structural and optical properties of layers grown with previously determined optimal III/N flux ratio. We find that optimal growth temperatures for Al0.50Ga0.50N layers with compositional homogeneity related with narrow UV photoluminescence properties are in the low temperature range for growing GaN layers, i.e., 650-680 °C. We propose that lowering Ga adatom diffusion on the surface favors random incorporation of both Ga and Al adatoms on wurtzite crystallographic sites leading to the formation of an homogeneous alloy.

Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

PubMed Central

Hu, Hongpo; Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Gui, Chengqun; Liu, Sheng

2017-01-01

We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs) and ex-situ sputtered AlN NL. The threading dislocation (TD) densities in GaN-based UV LEDs with GaN/AlGaN/sputtered AlN NLs were determined by high-resolution X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM), which revealed that the TD density in UV LED with AlGaN NL was the highest, whereas that in UV LED with sputtered AlN NL was the lowest. The light output power (LOP) of UV LED with AlGaN NL was 18.2% higher than that of UV LED with GaN NL owing to a decrease in the absorption of 375 nm UV light in the AlGaN NL with a larger bandgap. Using a sputtered AlN NL instead of the AlGaN NL, the LOP of UV LED was further enhanced by 11.3%, which is attributed to reduced TD density in InGaN/AlInGaN active region. In the sputtered AlN thickness range of 10–25 nm, the LOP of UV LED with 15-nm-thick sputtered AlN NL was the highest, revealing that optimum thickness of the sputtered AlN NL is around 15 nm. PMID:28294166

Characteristics of Ni-Cr-Fe laser clad layers on EA4T steel

NASA Astrophysics Data System (ADS)

Chen, Wenjing; Chen, Hui; Wang, Yongjing; Li, Congchen; Wang, Xiaoli

2017-07-01

The Ni-Cr-Fe metal powder was deposited on EA4T steel by laser cladding technology. The microstructure and chemical composition of the cladding layer were analyzed by optical microscopy (OM), scanning electron microscopy (SEM) and X-ray diffraction (XRD). The bonding ability between the cladding layer and the matrix was measured. The results showed that the bonding between the cladding layer and the EA4T steel was metallurgical bonding. The microstructure of cladding layer was composed of planar crystals, columnar crystals and dendrite, which consisted of Cr2Ni3, γ phase, M23C6 and Ni3B phases. When the powder feeding speed reached 4 g/min, the upper bainite occurred in the heat affected zone (HAZ). Moreover, the tensile strength of the joint increased, while the yield strength and the ductility decreased.

Effect of CeO2 on TiC Morphology in Ni-Based Composite Coating

NASA Astrophysics Data System (ADS)

Cai, Yangchuan; Luo, Zhen; Chen, Yao

2018-03-01

The TiC/Ni composite coating with different content of CeO2 was fabricated on the Cr12MoV steel by laser cladding. The microstructure of cladding layers with the different content of CeO2 from the bottom to the surface is columnar crystal, cellular crystal, and equiaxed crystal. When the content of CeO2 is 0 %, the cladding layer has a coarse and nonuniform microstructure and TiC particles gathering in the cladding layer, and then the wear resistance was reduced. Appropriate rare-earth elements refined and homogenised the microstructure and enhanced the content of carbides, precipitated TiC particles and original TiC particles were spheroidised and refined, the wear resistance of the cladding layer was improved significantly. Excessive rare-earth elements polluted the grain boundaries and made the excessive burning loss of TiC particles that reduced the wear resistance of the cladding layer.

Microscopic potential fluctuations in Si-doped AlGaN epitaxial layers with various AlN molar fractions and Si concentrations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kurai, Satoshi, E-mail: kurai@yamaguchi-u.ac.jp; Yamada, Yoichi; Miyake, Hideto

2016-01-14

Nanoscopic potential fluctuations of Si-doped AlGaN epitaxial layers with the AlN molar fraction varying from 0.42 to 0.95 and Si-doped Al{sub 0.61}Ga{sub 0.39}N epitaxial layers with Si concentrations of 3.0–37 × 10{sup 17 }cm{sup −3} were investigated by cathodoluminescence (CL) imaging combined with scanning electron microscopy. The spot CL linewidths of AlGaN epitaxial layers broadened as the AlN molar fraction was increased to 0.7, and then narrowed at higher AlN molar fractions. The experimental linewidths were compared with the theoretical prediction from the alloy broadening model. The trends displayed by our spot CL linewidths were consistent with calculated results at AlN molar fractionsmore » of less than about 0.60, but the spot CL linewidths were markedly broader than the calculated linewidths at higher AlN molar fractions. The dependence of the difference between the spot CL linewidth and calculated line broadening on AlN molar fraction was found to be similar to the dependence of reported S values, indicating that the vacancy clusters acted as the origin of additional line broadening at high AlN molar fractions. The spot CL linewidths of Al{sub 0.61}Ga{sub 0.39}N epitaxial layers with the same Al concentration and different Si concentrations were nearly constant in the entire Si concentration range tested. From the comparison of reported S values, the increase of V{sub Al} did not contribute to the linewidth broadening, unlike the case of the V{sub Al} clusters.« less

The effect of laser process parameters on microstructure and dilution rate of cladding coatings

NASA Astrophysics Data System (ADS)

Bin, Liu; Heping, Liu; Xingbin, Jing; Yuxin, Li; Peikang, Bai

2018-02-01

In order to broaden the range of application of Q235 steel, it is necessary to repair the surface of steel. High performance 316L stainless steel coating was successfully obtained on Q235 steel by laser cladding technology. The effect of laser cladding parameters on the geometrical size and appearance of single cladding layer was investigated. The experimental results show that laser current has an important influence on the surface morphology of single channel cladding. When the current is from 155A to 165A, the cladding coating becomes smooth. The laser current has an effect on the geometric cross section size and dilution rate of single cladding. The results revealed that with the rising of laser current, the width, height and depth of layer increase gradually. With the rising of laser current, the dilution rate of cladding layer is gradually increasing.

Structure and tribological properties of steel after non-vacuum electron beam cladding of Ti, Mo and graphite powders

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bataev, I.A.; Mul, D.O.; Bataev, A.A.

2016-02-15

The non-vacuum electron beam cladding technique was used to fabricate layers alloyed with Ti, Mo and C on the surface of low-alloyed steel. Two types of experiments were carried out. In the first experiment, a mixture of Ti and graphite powders was used for cladding; in the second, a mixture of Ti, Mo and graphite powders was used for cladding. CaF{sub 2} powder or a mixture of CaF{sub 2} and LiF powders was used as flux. The thickness of the cladded layers was in the range of 2–2.2 mm. The structure of the layers was studied using optical microscopy, scanningmore » electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray diffraction (XRD). The microhardness after cladding of the layers fabricated by cladding of Ti and graphite powders was 8–9 GPa, while the microhardness of layers with Mo additions reached 11–12 GPa. The highest wear resistance at sliding friction and friction in abrasive environment was reached in the samples fabricated using Ti, Mo and graphite mixture due to the higher hardness and the martensite–austenite structure of the matrix. The wear resistance against fixed abrasive particles was 2.4 times higher compared to that of carburized and quenched steel. - Highlights: • Ti, C and Mo mixture of powders was cladded using non-vacuum electron beam treatment. • The depth of the cladded layers was 2.0 … 2.2 mm. • The microhardness of layer with Mo, Ti and C additions reached ~ 11 … 12 GPa. • The hardening of the layers caused by the formation of TiC particles and martensitic matrix • Wear resistance of cladded coatings was 2.4 higher than carburized steel.« less

Engineering of electric field distribution in GaN(cap)/AlGaN/GaN heterostructures: theoretical and experimental studies

NASA Astrophysics Data System (ADS)

Gladysiewicz, M.; Janicki, L.; Misiewicz, J.; Sobanska, M.; Klosek, K.; Zytkiewicz, Z. R.; Kudrawiec, R.

2016-09-01

Polarization engineering of GaN-based heterostructures opens a way to develop advanced transistor heterostructures, although measurement of the electric field in such heterostructures is not a simple task. In this work, contactless electroreflectance (CER) spectroscopy has been applied to measure the electric field in GaN-based heterostructures. For a set of GaN(d  =  0, 5, 15, and 30 nm)/AlGaN(20 nm)/GaN(buffer) heterostructures a decrease of electric field in the GaN(cap) layer from 0.66 MV cm-1 to 0.27 MV cm-1 and an increase of the electric field in the AlGaN layer from 0.57 MV cm-1 to 0.99 MV cm-1 have been observed with the increase in the GaN(cap) thickness from 5-30 nm. For a set of GaN(20 nm)/AlGaN(d  =  10, 20, 30, and 40 nm)/GaN(buffer) heterostructures a decrease of the electric field in the AlGaN layer from 1.77 MV cm-1 to 0.64 MV cm-1 and an increase of the electric field in the GaN layer from 0.57 MV cm-1 to 0.99 MV cm-1 were observed with the increase in the AlGaN thickness from 10-40 nm. To determine the distribution of the electric field in these heterostructures the Schrödinger and Poisson equations are solved in a self-consistent manner and matched with experimental data. It is shown that the built-in electric field in the GaN(cap) and AlGaN layers obtained from measurements does not reach values of electric field resulting only from polarization effects. The measured electric fields are smaller due to a screening of polarization effects by free carriers, which are inhomogeneously distributed across the heterostructure and accumulate at interfaces. The results clearly demonstrate that CER measurements supported by theoretical calculations are able to determine the electric field distribution in GaN-based heterostructures quantitatively, which is very important for polarization engineering in this material system.

Hot Forging of a Cladded Component by Automated GMAW Process

NASA Astrophysics Data System (ADS)

Rafiq, Muhammad; Langlois, Laurent; Bigot, Régis

2011-01-01

Weld cladding is employed to improve the service life of engineering components by increasing corrosion and wear resistance and reducing the cost. The acceptable multi-bead cladding layer depends on single bead geometry. Hence, in first step, the relationship between input process parameters and the single bead geometry is studied and in second step a comprehensive study on multi bead clad layer deposition is carried out. This paper highlights an experimental study carried out to get single layer cladding deposited by automated Gas Metal Arc Welding (GMAW) process and to find the possibility of hot forming of the cladded work piece to get the final hot formed improved structure. GMAW is an arc welding process that uses an arc between a consumable electrode and the welding pool with an external shielding gas and the cladding is done by alongside deposition of weld beads. The experiments for single bead were conducted by varying the three main process parameters wire feed rate, arc voltage and welding speed while keeping other parameters like nozzle to work distance, shielding gas and its flow rate and torch angle constant. The effect of bead spacing and torch orientation on the cladding quality of single layer from the results of single bead deposition was studied. Effect of the dilution rate and nominal energy on the cladded layer hot bending quality was also performed at different temperatures.

Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering.

PubMed

Zhang, Zi-Hui; Ju, Zhengang; Liu, Wei; Tan, Swee Tiam; Ji, Yun; Kyaw, Zabu; Zhang, Xueliang; Hasanov, Namig; Sun, Xiao Wei; Demir, Hilmi Volkan

2014-04-15

The p-type AlGaN electron blocking layer (EBL) is widely used in InGaN/GaN light-emitting diodes (LEDs) for electron overflow suppression. However, a typical EBL also reduces the hole injection efficiency, because holes have to climb over the energy barrier generated at the p-AlGaN/p-GaN interface before entering the quantum wells. In this work, to address this problem, we report the enhancement of hole injection efficiency by manipulating the hole transport mechanism through insertion of a thin GaN layer of 1 nm into the p-AlGaN EBL and propose an AlGaN/GaN/AlGaN-type EBL outperforming conventional AlGaN EBLs. Here, the position of the inserted thin GaN layer relative to the p-GaN region is found to be the key to enhancing the hole injection efficiency. InGaN/GaN LEDs with the proposed p-type AlGaN/GaN/AlGaN EBL have demonstrated substantially higher optical output power and external quantum efficiency.

Ion-implanted planar-buried-heterostructure diode laser

DOEpatents

Brennan, Thomas M.; Hammons, Burrell E.; Myers, David R.; Vawter, Gregory A.

1991-01-01

A Planar-Buried-Heterostructure, Graded-Index, Separate-Confinement-Heterostructure semiconductor diode laser 10 includes a single quantum well or multi-quantum well active stripe 12 disposed between a p-type compositionally graded Group III-V cladding layer 14 and an n-type compositionally graded Group III-V cladding layer 16. The laser 10 includes an ion implanted n-type region 28 within the p-type cladding layer 14 and further includes an ion implanted p-type region 26 within the n-type cladding layer 16. The ion implanted regions are disposed for defining a lateral extent of the active stripe.

Tunnel barrier schottky

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chu, Rongming; Cao, Yu; Li, Zijian

2018-02-20

A diode includes: a semiconductor substrate; a cathode metal layer contacting a bottom of the substrate; a semiconductor drift layer on the substrate; a graded aluminum gallium nitride (AlGaN) semiconductor barrier layer on the drift layer and having a larger bandgap than the drift layer, the barrier layer having a top surface and a bottom surface between the drift layer and the top surface, the barrier layer having an increasing aluminum composition from the bottom surface to the top surface; and an anode metal layer directly contacting the top surface of the barrier layer.

Inclined dislocation arrays in AlGaN/AlGaN quantum well structures emitting at 290 nm

NASA Astrophysics Data System (ADS)

Chang, T. Y.; Moram, M. A.; McAleese, C.; Kappers, M. J.; Humphreys, C. J.

2010-12-01

We report on the structural and optical properties of deep ultraviolet emitting AlGaN/AlGaN multiple quantum wells (MQWs) grown on (0001) sapphire by metal-organic vapor phase epitaxy using two different buffer layer structures, one containing a thin (1 μm) AlN layer combined with a GaN interlayer and the other a thick (4 μm) AlN layer. Transmission electron microscopy analysis of both structures showed inclined arrays of dislocations running through the AlGaN layers at an angle of ˜30°, originating at bunched steps at the AlN surface and terminating at bunched steps at the surface of the MQW structure. In all layers, these inclined dislocation arrays are surrounded by AlGaN with a relatively higher Ga content, consistent with plan-view cathodoluminescence maps in which the bunched surface steps are associated with longer emission wavelengths. The structure with the 4 μm-thick AlN buffer layer had a dislocation density lower by a factor of 2 (at (1.7±0.1)×109 cm-2) compared to the structure with the 1 μm thick AlN buffer layer, despite the presence of the inclined dislocation arrays.

Compact Hybrid Laser Rod and Laser System

NASA Technical Reports Server (NTRS)

Pierrottet, Diego F. (Inventor); Busch, George E. (Inventor); Amzajerdian, Farzin (Inventor)

2017-01-01

A hybrid fiber rod includes a fiber core and inner and outer cladding layers. The core is doped with an active element. The inner cladding layer surrounds the core, and has a refractive index substantially equal to that of the core. The outer cladding layer surrounds the inner cladding layer, and has a refractive index less than that of the core and inner cladding layer. The core length is about 30 to 2000 times the core diameter. A hybrid fiber rod laser system includes an oscillator laser, modulating device, the rod, and pump laser diode(s) energizing the rod from opposite ends. The rod acts as a waveguide for pump radiation but allows for free-space propagation of laser radiation. The rod may be used in a laser resonator. The core length is less than about twice the Rayleigh range. Degradation from single-mode to multi-mode beam propagation is thus avoided.

Effect of laser power on clad metal in laser-TIG combined metal cladding

NASA Astrophysics Data System (ADS)

Utsumi, Akihiro; Hino, Takanori; Matsuda, Jun; Tasoda, Takashi; Yoneda, Masafumi; Katsumura, Munehide; Yano, Tetsuo; Araki, Takao

2003-03-01

TIG arc welding has been used to date as a method for clad welding of white metal as bearing material. We propose a new clad welding process that combines a CO2 laser and a TIG arc, as a method for cladding at high speed. We hypothesized that this method would permit appropriate control of the melted quantity of base metal by varying the laser power. We carried out cladding while varying the laser power, and investigated the structure near the boundary between the clad layer and the base metal. Using the laser-TIG combined cladding, we found we were able to control appropriately the degree of dilution with the base metal. By applying this result to subsequent cladding, we were able to obtain a clad layer of high quality, which was slightly diluted with the base metal.

Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth

NASA Astrophysics Data System (ADS)

Wong, Man Hoi; Pei, Yi; Palacios, Tomás; Shen, Likun; Chakraborty, Arpan; McCarthy, Lee S.; Keller, Stacia; DenBaars, Steven P.; Speck, James S.; Mishra, Umesh K.

2007-12-01

Nonalloyed Ohmic contacts on Ga-face n+-GaN/AlGaN/GaN high electron mobility transistor (HEMT) structures typically have significant contact resistance to the two-dimensional electron gas (2DEG) due to the AlGaN barrier. By growing the HEMT structure inverted on the N-face, electrons from the contacts were able to access the 2DEG without going through an AlGaN layer. A low contact resistance of 0.16Ωmm and specific contact resistivity of 5.5×10-7Ωcm2 were achieved without contact annealing on the inverted HEMT structure.

High extraction efficiency ultraviolet light-emitting diode

DOEpatents

Wierer, Jonathan; Montano, Ines; Allerman, Andrew A.

2015-11-24

Ultraviolet light-emitting diodes with tailored AlGaN quantum wells can achieve high extraction efficiency. For efficient bottom light extraction, parallel polarized light is preferred, because it propagates predominately perpendicular to the QW plane and into the typical and more efficient light escape cones. This is favored over perpendicular polarized light that propagates along the QW plane which requires multiple, lossy bounces before extraction. The thickness and carrier density of AlGaN QW layers have a strong influence on the valence subband structure, and the resulting optical polarization and light extraction of ultraviolet light-emitting diodes. At Al>0.3, thinner QW layers (<2.5 nm are preferred) result in light preferentially polarized parallel to the QW plane. Also, active regions consisting of six or more QWs, to reduce carrier density, and with thin barriers, to efficiently inject carriers in all the QWs, are preferred.

Accurate calibration for the quantification of the Al content in AlGaN epitaxial layers by energy-dispersive X-ray spectroscopy in a Transmission Electron Microscope

NASA Astrophysics Data System (ADS)

Amari, H.; Lari, L.; Zhang, H. Y.; Geelhaar, L.; Chèze, C.; Kappers, M. J.; McAleese, C.; Humphreys, C. J.; Walther, T.

2011-11-01

Since the band structure of group III- nitrides presents a direct electronic transition with a band-gap energy covering the range from 3.4 eV for (GaN) to 6.2 eV (for AlN) at room temperature as well as a high thermal conductivity, aluminium gallium nitride (AlGaN) is a strong candidate for high-power and high-temperature electronic devices and short-wavelength (visible and ultraviolet) optoelectronic devices. We report here a study by energy-filtered transmission electron microscopy (EFTEM) and energy-dispersive X-ray spectroscopy (EDXS) of the micro structure and elemental distribution in different aluminium gallium nitride epitaxial layers grown by different research groups. A calibration procedure is out-lined that yields the Al content from EDXS to within ~1 at % precision.

Influence of laser radiation on structure and properties of steels and alloys

NASA Astrophysics Data System (ADS)

Tarasova, T.; Popova, E.

2013-03-01

In present study, and laser alloying of different steels and laser cladding of Ti and SiC powders mixtures was carried out, and microstructure, as well as microhardness profile and wear properties were examined. Research of the influence of lasers alloying modes on the elastic and plastic characteristics of the surface was conducted. As a result of chemical reactions in the cladded layer, a new phase (TiC) was synthesized during cladding process. The results showed that, in the clad layer, TiC was solidified to form dendrites in the clad zone. Produced coatings have high microhardness values in the upper and middle clad areas, about two time higher than clad matrix microhardness.

Status of backthinned AlGaN based focal plane arrays for deep-UV imaging

NASA Astrophysics Data System (ADS)

Reverchon, J.-L.; Lehoucq, G.; Truffer, J.-P.; Costard, E.; Frayssinet, E.; Semond, F.; Duboz, J.-Y.; Giuliani, A.; Réfrégiers, M.; Idir, M.

2017-11-01

The achievement of deep ultraviolet (UV) focal plane arrays (FPA) is required for both solar physics [1] and micro electronics industry. The success of solar mission (SOHO, STEREO [2], SDO [3]…), has shown the accuracy of imaging at wavelengths from 10 nm to 140 nm to reveal effects occurring in the sun corona. Deep UV steppers at 13 nm are another demanding imaging technology for the microelectronic industry in terms of uniformity and stability. A third application concerns beam shaping of Synchrotron lines [4]. Consequently, such wavelengths are of prime importance whereas the vacuum UV wavelengths are very difficult to detect due to the dramatic interaction of light with materials. The fast development of nitrides has given the opportunity to investigate AlGaN as a material for UV detection. Camera based on AlGaN present an intrinsic spectral selectivity and an extremely low dark current at room temperature. We have previously presented several FPA dedicated to deep UV based on 320 x 256 pixels of Schottky photodiodes with a pitch of 30 μm [4, 5]. AlGaN is grown on a silicon substrate instead of sapphire substrate only transparent down to 200 nm. After a flip-chip hybridization, silicon substrate and AlGaN basal layer was removed by dry etching. Then, the spectral responsivity of the FPA presented a quantum efficiency (QE) from 5% to 20% from 50 nm to 290 nm when removing the highly doped contact layer via a selective wet etching. This FPA suffered from a low uniformity incompatible with imaging, and a long time response due to variations of conductivity in the honeycomb. We also observed a low rejection of visible. It is probably due to the same honeycomb conductivity enhancement for wavelength shorter than 360 nm, i.e., the band gap of GaN. We will show hereafter an improved uniformity due to the use of a precisely ICP (Inductively Coupled Plasma) controlled process. The final membrane thickness is limited to the desertion layer. Neither access resistance limitation nor long response time are observed. QE varies from 5% at 50 nm to 15% at 6 nm (85% more when taking into account the filling factor). Consequently, we can propose prototypes concerning not only "solar blind" camera optimized for narrow band in the near UV range (between 280 nm and 260 nm), but also devices with spectral range extended in the deep UV (290 nm to 10 nm). Both detectors are available for an optical budget evaluation.

Compositional inhomogeneities in AlGaN thin films grown by molecular beam epitaxy: Effect on MSM UV photodetectors

NASA Astrophysics Data System (ADS)

Pramanik, Pallabi; Sen, Sayantani; Singha, Chirantan; Roy, Abhra Shankar; Das, Alakananda; Sen, Susanta; Bhattacharyya, A.

2016-10-01

Ultraviolet (UV) MSM photodetectors (PD) based on AlGaN alloys find many applications, including flame sensing. In this work we investigate the dependence of AlGaN based photodetectors grown by MBE on the kinetics of growth. MSM photodetectors were fabricated in the interdigitated configuration with Ni/Au contacts having 400 μm finger length and 10 μm finger spacing. Bulk Al0.4Ga0.6N films were grown on to sapphire substrates using an AlN buffer layer. A series of PDs were developed using the Al0.4Ga0.6N films grown under different group III/V flux ratios ranging from stoichiometric conditions to much higher than unity. Upon testing, it was observed that the otherwise identical photodetectors show significant decrease in dark current as AlGaN deposition conditions change from stoichiometric to excess group III, due to reduction of unintentional incorporation of oxygen-related point defects. In addition, the intensity and spectral dependence of the photocurrent also change, showing an extended low energy tail for the former and a sharp and prominent excitonic peak for the latter. The optical transmission measurements indicate a variation in Urbach energy with deposition conditions of the AlGaN films, although they have the same absorption edge. While all samples show a single red-shifted photoluminescence peak at room temperature, upon cooling, multiple higher energy peaks appear in the photoluminescence (PL) spectra, indicating that the alloys contain complex compositional inhomogeneities. Two types of alloy fluctuations, determined by the growth conditions, have been identified that modulate the optoelectronic properties of AlGaN by changing the spatial localization of excitons, thereby altering their stability. We identified that growth under stoichiometric conditions leads to compositional inhomogeneities that play a detrimental role in the operation of MSM photodetectors, which reduces the sharpness of the sensitivity edge, while growth under excess metal conditions enhances it.

Microstructure and properties of pure iron/copper composite cladding layers on carbon steel

NASA Astrophysics Data System (ADS)

Wan, Long; Huang, Yong-xian; Lü, Shi-xiong; Huang, Ti-fang; Lü, Zong-liang

2016-08-01

In the present study, pure iron/copper composite metal cladding was deposited onto carbon steel by tungsten inert gas welding. The study focused on interfacial morphological, microstructural, and mechanical analyses of the composite cladding layers. Iron liquid-solid-phase zones were formed at copper/steel and iron interfaces because of the melting of the steel substrate and iron. Iron concentrated in the copper cladding layer was observed to exhibit belt, globule, and dendrite morphologies. The appearance of iron-rich globules indicated the occurrence of liquid phase separation (LPS) prior to solidification, and iron-rich dendrites crystallized without the occurrence of LPS. The maximum microhardness of the iron/steel interface was lower than that of the copper/steel interface because of the diffusion of elemental carbon. All samples fractured in the cladding layers. Because of a relatively lower strength of the copper layer, a short plateau region appeared when shear movement was from copper to iron.

Nuclear reactor fuel element with vanadium getter on cladding

DOEpatents

Johnson, Carl E.; Carroll, Kenneth G.

1977-01-01

A nuclear reactor fuel element is described which has an outer cladding, a central core of fissionable or mixed fissionable and fertile fuel material and a layer of vanadium as an oxygen getter on the inner surface of the cladding. The vanadium reacts with oxygen released by the fissionable material during irradiation of the core to prevent the oxygen from reacting with and corroding the cladding. Also described is a method for coating the inner surface of small diameter tubes of cladding with a layer of vanadium.

Method of making an ion-implanted planar-buried-heterostructure diode laser

DOEpatents

Brennan, Thomas M.; Hammons, Burrell E.; Myers, David R.; Vawter, Gregory A.

1992-01-01

Planar-buried-heterostructure, graded-index, separate-confinement-heterostructure semiconductor diode laser 10 includes a single quantum well or multi-quantum well active stripe 12 disposed between a p-type compositionally graded Group III-V cladding lever 14 and an n-type compositionally graded Group III-V cladding layer 16. The laser 10 includes an iion implanted n-type region 28 within the p-type cladding layer 14 and further includes an ion implanted p-type region 26 within the n-type cladding layer 16. The ion implanted regions are disposed for defining a lateral extent of the active stripe.

Inverted Al0.25Ga0.75N/GaN ultraviolet p-i-n photodiodes formed on p-GaN template layer grown by metalorganic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Chang, Kuo-Hua; Sheu, Jinn-Kong; Lee, Ming-Lun; Tu, Shang-Ju; Yang, Chih-Ciao; Kuo, Huan-Shao; Yang, J. H.; Lai, Wei-Chih

2010-07-01

Inverted Al0.25Ga0.75N/GaN ultraviolet (UV) p-i-n photodiodes (PDs) were grown by selective-area regrowth on p-GaN template. The inverted devices with low-resistivity n-type AlGaN top-contact layers exhibited a typical zero-bias peak responsivity of 66.7 mA/W at 310 nm corresponding to the external quantum efficiency of 26.6%. The typical UV-to-visible (310/400 nm) spectral rejection ratio at zero-bias was over three orders of magnitude. The differential resistance and detectivity were obtained at approximately 6.2×1012 Ω and 3.4×1013 cm Hz1/2 W-1, respectively. Compared with conventional AlGaN/GaN-based UV p-i-n PDs, the proposed device structure can potentially achieve solar-blind AlGaN/GaN-based p-i-n PDs with low-aluminum content or aluminum-free p-contact layer and reduce excessive tensile strain due to the lattice mismatch between AlGaN and GaN layers.

Effect of mo Content on Microstructure and Properties of Laser Cladding Fe-BASED Alloy Coatings

NASA Astrophysics Data System (ADS)

Xiaoli, Ma; Kaiming, Wang; Hanguang, Fu; Jiang, Ju; Yongping, Lei; Dawei, Yi

Mo alloying Fe-based coating was fabricated on the surface of Q235 steel by using 6 kW fiber laser. The effects of Mo additions on the microstructure, microhardness and wear resistance of the cladding layer were studied by means of optical microscopy (OM), scanning electron microscope (SEM), X-ray diffraction (XRD), energy dispersive spectrometer (EDS), Vickers hardness tester and M-200 ring block wear tester. Research results showed that the microstructure of Mo-free cladding layer mainly consisted of matrix and eutectic structure. The matrix was martensite and retained austenite. The eutectic structure mainly consisted of M2(B,C) and M7(C,B)3 type of eutectic borocarbides. With the increase of Mo content, there was no significant change in the matrix. However, the eutectic structure was transformed from M2(B,C)- and M7(C,B)3-type borocarbides into M2(B,C)-, M7(C,B)3- and M23(C,B)6-type borocarbides. When the content of Mo is 4.0wt.%, the Mo2C-type carbide appear on the matrix, and parts of the borocarbide networks are broken. The change of microhardness of the cladding layer was not obvious with the increase of Mo content. But the increase of Mo content increases the wear resistance of the cladding layer. The wear resistance of cladding layer with 4.0wt.% Mo is 2.4 times as much as the cladding layer which is Mo-free.

Microstructures and properties of ceramic particle-reinforced metal matrix composite layers produced by laser cladding

NASA Astrophysics Data System (ADS)

Zhang, Qingmao; He, Jingjiang; Liu, Wenjin; Zhong, Minlin

2005-01-01

Different weight ratio of titanium, zirconium, WC and Fe-based alloy powders were mixed, and cladded onto a medium carbon steel substrate using a 3kW continuous wave CO2 laser, aiming at producing Ceramic particles- reinforced metal matrix composites (MMCs) layers. The microstructures of the layers are typical hypoeutectic, and the major phases are Ni3Si2, TiSi2, Fe3C, FeNi, MC, Fe7Mo3, Fe3B, γ(residual austenite) and M(martensite). The microstructure morphologies of MMCs layers are dendrites/cells. The MC-type reinforcements are in situ synthesis Carbides which main compositions consist of transition elements Zr, Ti, W. The MC-type particles distributed within dendrite and interdendritic regions with different volume fractions for single and overlapping clad layers. The MMCs layers are dense and free of cracks with a good metallurgical bonding between the layer and substrate. The addition ratio of WC in the mixtures has the remarkable effect on the microhardness of clad layers.

Catalytic activity of enzymes immobilized on AlGaN /GaN solution gate field-effect transistors

NASA Astrophysics Data System (ADS)

Baur, B.; Howgate, J.; von Ribbeck, H.-G.; Gawlina, Y.; Bandalo, V.; Steinhoff, G.; Stutzmann, M.; Eickhoff, M.

2006-10-01

Enzyme-modified field-effect transistors (EnFETs) were prepared by immobilization of penicillinase on AlGaN /GaN solution gate field-effect transistors. The influence of the immobilization process on enzyme functionality was analyzed by comparing covalent immobilization and physisorption. Covalent immobilization by Schiff base formation on GaN surfaces modified with an aminopropyltriethoxysilane monolayer exhibits high reproducibility with respect to the enzyme/substrate affinity. Reductive amination of the Schiff base bonds to secondary amines significantly increases the stability of the enzyme layer. Electronic characterization of the EnFET response to penicillin G indicates that covalent immobilization leads to the formation of an enzyme (sub)monolayer.

Microstructure and high temperature oxidation resistance of Ti-Ni gradient coating on TA2 titanium alloy fabricated by laser cladding

NASA Astrophysics Data System (ADS)

Liu, Fencheng; Mao, Yuqing; Lin, Xin; Zhou, Baosheng; Qian, Tao

2016-09-01

To improve the high temperature oxidation resistance of TA2 titanium alloy, a gradient Ni-Ti coating was laser cladded on the surface of the TA2 titanium alloy substrate, and the microstructure and oxidation behavior of the laser cladded coating were investigated experimentally. The gradient coating with a thickness of about 420-490 μm contains two different layers, e.g. a bright layer with coarse equiaxed grain and a dark layer with fine and columnar dendrites, and a transition layer with a thickness of about 10 μm exists between the substrate and the cladded coating. NiTi, NiTi2 and Ni3Ti intermetallic compounds are the main constructive phases of the laser cladded coating. The appearance of these phases enhances the microhardness, and the dense structure of the coating improves its oxidation resistance. The solidification procedure of the gradient coating is analyzed and different kinds of solidification processes occur due to the heat dissipation during the laser cladding process.

Asymmetrical design for non-relaxed near-UV AlGaN/GaN distributed Bragg reflectors

NASA Astrophysics Data System (ADS)

Moudakir, T.; Abid, M.; Doan, B.-T.; Demarly, E.; Gautier, S.; Orsal, G.; Jacquet, J.; Ougazzaden, A.; Genty, F.

2010-10-01

Towards the development of high efficient GaN-based Vertical Cavity devices, the fabrication of cracks-free high reflective semiconductor mirrors is still an issue. For near-UV operating devices, one of the best solution is the use of AlGaN/GaN materials family. With a relatively high Al molar fraction in AlGaN, a large enough index contrast can be achieved to fabricate high reflectivity mirrors. However, the lattice mismatch between AlGaN and GaN increases with the Al molar fraction and induces a lot of cracks in the structure which affect its optical and electrical properties. Moreover, for a regrowth of an active layer on the top of the mirror, it is necessary to suppress crack generations to achieve a smooth surface. In this work, asymmetrical designs were investigated for the modeling of fully-strained AlGaN/GaN distributed Bragg Reflectors with crack-free surfaces. First, the critical thickness of MOVPE-grown AlGaN on GaN-on-sapphire templates was experimentally determined and modeled. Then, several AlGaN/GaN mirrors with various Al molar fractions and asymmetry factors were simulated demonstrating that non relaxed DBRs could be obtained with adequate parameters. Finally, it has also been shown that there is a best suited Al molar fraction in AlGaN for each DBR centering wavelength.

Defect reduction in Si-doped Al{sub 0.45}Ga{sub 0.55}N films by SiN{sub x} interlayer method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Yang; Chen, Shengchang; Kong, Man

2014-01-28

The dislocation density in AlGaN epitaxial layers with Al content as high as 45% grown on sapphire substrates has been effectively reduced by introducing an in-situ deposited SiN{sub x} nanomask layer in this study. By closely monitoring the evolution of numerous material properties, such as surface morphology, dislocation density, photoluminescence, strain states, and electron mobility of the Si-Al{sub 0.45}Ga{sub 0.55}N layers as the functions of SiN{sub x} interlayer growth time, the surface coverage fraction of SiN{sub x} is found to be a crucial factor determining the strain states and dislocation density. The dependence of the strain states and the dislocationmore » density on the surface coverage fraction of SiN{sub x} nanomask supports the very different growth models of Al-rich AlGaN on SiN{sub x} interlayer due to the reduced nucleation selectivity compared with the GaN counterpart. Compared with GaN, which can only nucleate at open pores of SiN{sub x} nanomask, Al-rich AlGaN can simultaneously nucleate at both open pores and SiN{sub x} covered areas. Dislocations will annihilate at the openings due to the 3D growth initiated on the opening area, while 2D growth mode is preserved on SiN{sub x} and the threading dislocations are also preserved. During the following growth process, lateral overgrowth will proceed from the Al{sub 0.45}Ga{sub 0.55}N islands on the openings towards the regions covered by SiN{sub x}, relaxing the compressive strain and bending the dislocations at the same time.« less

Expected progress based on aluminium galium nitride Focal Plan Array for near and deep Ultraviolet

NASA Astrophysics Data System (ADS)

Reverchon, J.-L.; Robin, K.; Bansropun, S.; Gourdel, Y.; Robo, J.-A.; Truffer, J.-P.; Costard, E.; Brault, J.; Frayssinet, E.; Duboz, J.-Y.

The fast development of nitrides has given the opportunity to investigate AlGaN as a material for ultraviolet detection. A camera based on such a material presents an extremely low dark current at room temperature. It can compete with technologies based on photocathodes, MCP intensifiers, back thinned CCD or hybrid CMOS focal plane arrays for low flux measurements. First, we will present results on focal plane array of 320 × 256 pixels with a pitch of 30 μm. The peak responsivity is tuned from 260 nm to 360 nm in different cameras. All these results are obtained in a standard SWIR supply chaine and with AlGaN Schottky diodes grown on sapphire. We will present here the first attempts to transfer the standard design Schottky photodiodes on from sapphire to silicon substrates. We will show the capability to remove the silicon substrate, to etch the window layer in order to extend the band width to lower wavelength and to maintain the AlGaN membrane integrity.

Lattice-mismatched GaInP LED devices and methods of fabricating same

DOEpatents

Mascarenhas, Angelo; Steiner, Myles A; Bhusal, Lekhnath; Zhang, Yong

2014-10-21

A method (100) of fabricating an LED or the active regions of an LED and an LED (200). The method includes growing, depositing or otherwise providing a bottom cladding layer (208) of a selected semiconductor alloy with an adjusted bandgap provided by intentionally disordering the structure of the cladding layer (208). A first active layer (202) may be grown above the bottom cladding layer (208) wherein the first active layer (202) is fabricated of the same semiconductor alloy, with however, a partially ordered structure. The first active layer (202) will also be fabricated to include a selected n or p type doping. The method further includes growing a second active layer (204) above the first active layer (202) where the second active layer (204) Is fabricated from the same semiconductor alloy.

Nuclear reactor fuel element

DOEpatents

Johnson, Carl E.; Crouthamel, Carl E.

1980-01-01

A nuclear reactor fuel element is described which has an outer cladding, a central core of fissionable or mixed fissionable and fertile fuel material and a layer of oxygen gettering material on the inner surface of the cladding. The gettering material reacts with oxygen released by the fissionable material during irradiation of the core thereby preventing the oxygen from reacting with and corroding the cladding. Also described is an improved method for coating the inner surface of the cladding with a layer of gettering material.

Microstructural Characterization of the U-9.1Mo Fuel/AA6061 Cladding Interface in Friction-Bonded Monolithic Fuel Plates Irradiated in the RERTR-6 Experiment

DOE PAGES

Keiser, Dennis D.; Jue, Jan-Fong; Miller, Brandon; ...

2015-09-03

Low-enrichment (U-235 < 20%) U-Mo monolithic fuel is being developed for use in research and test reactors. The earliest design for this fuel that was investigated via reactor testing was comprised of a nominally U-10Mo fuel foil encased in AA6061 (Al-6061) cladding. For a fuel design to be deemed adequate for final use in a reactor, it must maintain dimensional stability and retain fission products throughout irradiation, which means that there must be good integrity at the fuel foil/cladding interface. To investigate the nature of the fuel/cladding interface for this fuel type after irradiation, fuel plates that were tested inmore » INL's Advanced Test Reactor (ATR) were subsequently characterized using optical metallography, scanning electron microscopy, and transmission electron microscopy. Results of this characterization showed that the fuel/cladding interaction layers present at the U-Mo fuel/AA6061 cladding interface after fabrication became amorphous during irradiation. Up to two main interaction layers, based on composition, could be found at the fuel/cladding interface, depending on location. After irradiation, an Al-rich layer contained very few fission gas bubbles, but did exhibit Xe enrichment near the AA6061 cladding interface. Another layer, which contained more Si, had more observable fission gas bubbles. Adjacent to the AA6061 cladding were Mg-rich precipitates, which was in close proximity to the region where Xe is observed to be enriched. In samples produced using a focused ion beam at the interaction zone/AA6061 cladding interface were possible indications of porosity/debonding, which suggested that the interface in this location is relatively weak.« less

Residual stress and crack initiation in laser clad composite layer with Co-based alloy and WC + NiCr

NASA Astrophysics Data System (ADS)

Lee, Changmin; Park, Hyungkwon; Yoo, Jaehong; Lee, Changhee; Woo, WanChuck; Park, Sunhong

2015-08-01

Although laser cladding process has been widely used to improve the wear and corrosion resistance, there are unwanted cracking issues during and/or after laser cladding. This study investigates the tendency of Co-based WC + NiCr composite layers to cracking during the laser cladding process. Residual stress distributions of the specimen are measured using neutron diffraction and elucidate the correlation between the residual stress and the cracking in three types of cylindrical specimens; (i) no cladding substrate only, (ii) cladding with 100% stellite#6, and (iii) cladding with 55% stellite#6 and 45% technolase40s. The microstructure of the clad layer was composed of Co-based dendrite and brittle eutectic phases at the dendritic boundaries. And WC particles were distributed on the matrix forming intermediate composition region by partial melting of the surface of particles. The overlaid specimen exhibited tensile residual stress, which was accumulated through the beads due to contraction of the coating layer generated by rapid solidification, while the non-clad specimen showed compressive. Also, the specimen overlaid with 55 wt% stellite#6 and 45 wt% technolase40s showed a tensile stress higher than the specimen overlaid with 100% stellite#6 possibly, due to the difference between thermal expansion coefficients of the matrix and WC particles. Such tensile stresses can be potential driving force to provide an easy crack path ways for large brittle fractures combined with the crack initiation sites such as the fractured WC particles, pores and solidification cracks. WC particles directly caused clad cracks by particle fracture under the tensile stress. The pores and solidification cracks also affected as initiation sites and provided an easy crack path ways for large brittle fractures.

Microstructural Characterization of the U-9.1Mo Fuel/AA6061 Cladding Interface in Friction-Bonded Monolithic Fuel Plates Irradiated in the RERTR-6 Experiment

NASA Astrophysics Data System (ADS)

Keiser, Dennis D.; Jue, Jan-Fong; Miller, Brandon; Gan, Jian; Robinson, Adam; Medvedev, Pavel; Madden, James; Wachs, Dan; Clark, Curtis; Meyer, Mitch

2015-09-01

Low-enrichment (235U < 20 pct) U-Mo monolithic fuel is being developed for use in research and test reactors. The earliest design for this fuel that was investigated via reactor testing consisted of a nominally U-10Mo fuel foil encased in AA6061 (Al-6061) cladding. For a fuel design to be deemed adequate for final use in a reactor, it must maintain dimensional stability and retain fission products throughout irradiation, which means that there must be good integrity at the fuel foil/cladding interface. To investigate the nature of the fuel/cladding interface for this fuel type after irradiation, fuel plates were fabricated using a friction bonding process, tested in INL's advanced test reactor (ATR), and then subsequently characterized using optical metallography, scanning electron microscopy, and transmission electron microscopy. Results of this characterization showed that the fuel/cladding interaction layers present at the U-Mo fuel/AA6061 cladding interface after fabrication became amorphous during irradiation. Up to two main interaction layers, based on composition, could be found at the fuel/cladding interface, depending on location. After irradiation, an Al-rich layer contained very few fission gas bubbles, but did exhibit Xe enrichment near the AA6061 cladding interface. Another layer, which contained more Si, had more observable fission gas bubbles. In the samples produced using a focused ion beam at the interaction zone/AA6061 cladding interface, possible indications of porosity/debonding were found, which suggested that the interface in this location is relatively weak.

Nuclear fuel elements having a composite cladding

DOEpatents

Gordon, Gerald M.; Cowan, II, Robert L.; Davies, John H.

1983-09-20

An improved nuclear fuel element is disclosed for use in the core of nuclear reactors. The improved nuclear fuel element has a composite cladding of an outer portion forming a substrate having on the inside surface a metal layer selected from the group consisting of copper, nickel, iron and alloys of the foregoing with a gap between the composite cladding and the core of nuclear fuel. The nuclear fuel element comprises a container of the elongated composite cladding, a central core of a body of nuclear fuel material disposed in and partially filling the container and forming an internal cavity in the container, an enclosure integrally secured and sealed at each end of said container and a nuclear fuel material retaining means positioned in the cavity. The metal layer of the composite cladding prevents perforations or failures in the cladding substrate from stress corrosion cracking or from fuel pellet-cladding interaction or both. The substrate of the composite cladding is selected from conventional cladding materials and preferably is a zirconium alloy.

Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission

NASA Astrophysics Data System (ADS)

Sun, Wei; Al Muyeed, Syed Ahmed; Song, Renbo; Wierer, Jonathan J.; Tansu, Nelson

2018-05-01

Significant enhancement in green emission by integrating a thin AlInN barrier layer, or interlayer (IL), in an InGaN/GaN multiple quantum well (MQW) is demonstrated. The MQWs investigated here contains 5 periods of an InGaN QW, a 1 nm thick AlInN IL, and a 10 nm thick GaN barrier grown by metalorganic chemical vapor deposition. To accommodate the optimum low-pressure (20 Torr) growth of the AlInN layer a growth flow sequence with changing pressure is devised. The AlInN IL MQWs are compared to InGaN/AlGaN/GaN MQWs (AlGaN IL MQWs) and conventional InGaN/GaN MQWs. The AlInN IL MQWs provide benefits that are similar to AlGaN ILs, by aiding in the formation of abrupt heterointerfaces as indicated by X-ray diffraction omega-2theta (ω-2θ) scans, and also efficiency improvements due to high temperature annealing schedules during barrier growth. Room temperature photoluminescence of the MQW with AlInN ILs shows similar performance to MQWs with AlGaN ILs, and ˜4-7 times larger radiative efficiency (pump intensity dependent) at green wavelengths than conventional InGaN/GaN MQWs. This study shows the InGaN-based MQWs with AlInN ILs are capable of achieving superior performance to conventional InGaN MQWs emitting at green wavelengths.

Influence of adding strong-carbide-formation elements multiply on particle-reinforced Fe-matrix composite layer produced by laser cladding

NASA Astrophysics Data System (ADS)

Ma, Mingxing; Liu, Wenjin; Zhong, Minlin; Zhang, Hongjun; Zhang, Weiming

2005-01-01

In the research hotspot of particle reinforced metal-matrix composite layer produced by laser cladding, in-situ reinforced particles obtained by adding strong-carbide-formation elements into cladding power have been attracting more attention for their unique advantage. The research has demonstrated that when adding strong-carbide-formation elements-Ti into the cladding powder of the Fe-C-Si-B separately, by optimizing the composition, better cladding coating with the characters of better strength and toughness, higher wear resistance and free of cracks. When the microstructure of cladding coating is hypoeutectic microstructure, its comprehensive performance is best. The research discovered that, compositely adding the strong-carbide-formation elements like Ti+V, Ti+Zr or V+Zr into the cladding coating is able to improve its comprehensive capability. All the cladding coatings obtained are hypoeutectic microstructure. The cladding coatings have a great deal of particulates, and its average microhardness reaches HV0.2700-1400. The research also discovered that the cladding coating obtained is of less cracking after adding the Ti+Zr.

Role of low-temperature AlGaN interlayers in thick GaN on silicon by metalorganic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Fritze, S.; Drechsel, P.; Stauss, P.; Rode, P.; Markurt, T.; Schulz, T.; Albrecht, M.; Bläsing, J.; Dadgar, A.; Krost, A.

2012-06-01

Thin AlGaN interlayers have been grown into a thick GaN stack on Si substrates to compensate tensile thermal stress and significantly improve the structural perfection of the GaN. In particular, thicker interlayers reduce the density in a-type dislocations as concluded from x-ray diffraction (XRD) measurements. Beyond an interlayer thickness of 28 nm plastic substrate deformation occurs. For a thick GaN stack, the first two interlayers serve as strain engineering layers to obtain a crack-free GaN structure, while a third strongly reduces the XRD ω-(0002)-FWHM. The vertical strain and quality profile determined by several XRD methods demonstrates the individual impact of each interlayer.

Temperature and doping dependent changes in surface recombination during UV illumination of (Al)GaN bulk layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Netzel, Carsten; Jeschke, Jörg; Brunner, Frank

2016-09-07

We have studied the effect of continuous illumination with above band gap energy on the emission intensity of polar (Al)GaN bulk layers during the photoluminescence experiments. A temporal change in emission intensity on time scales from seconds to hours is based on the modification of the semiconductor surface states and the surface recombination by the incident light. The temporal behavior of the photoluminescence intensity varies with the parameters such as ambient atmosphere, pretreatment of the surface, doping density, threading dislocation density, excitation power density, and sample temperature. By means of temperature-dependent photoluminescence measurements, we observed that at least two differentmore » processes at the semiconductor surface affect the non-radiative surface recombination during illumination. The first process leads to an irreversible decrease in photoluminescence intensity and is dominant around room temperature, and the second process leads to a delayed increase in intensity and becomes dominant around T = 150–200 K. Both processes become slower when the sample temperature decreases from room temperature. They cease for T < 150 K. Stable photoluminescence intensity at arbitrary sample temperature was obtained by passivating the analyzed layer with an epitaxially grown AlN cap layer.« less

The effect of silicon on the interaction between metallic uranium and aluminum: A 50 year long diffusion experiment

NASA Astrophysics Data System (ADS)

Leenaers, A.; Detavernier, C.; Van den Berghe, S.

2008-11-01

The core of the BR1 research reactor at SCK•CEN, Mol (Belgium) has a graphite matrix loaded with fuel rods consisting of a natural uranium slug in aluminum cladding. The BR1 reactor has been in operation since 1956 and still contains its original fuel rods. After more than 50 years irradiation at low temperature, some of the fuel rods have been examined. Fabrication reports indicate that a so-called AlSi bonding layer and an U(Al,Si) 3 anti-diffusion layer on the natural uranium fuel slug were applied to limit the interaction between the uranium fuel and aluminum cladding. The microstructure of the fuel, bonding and anti-diffusion layer and cladding were analysed using optical microscopy, scanning electron microscopy and electron microprobe analysis. It was found that the AlSi bonding layer does provide a tight bond between fuel and cladding but that it is a thin USi layer that acts as effective anti-diffusion layer and not the intended U(Al,Si) 3 layer.

Effects of Synchronous Rolling on Microstructure, Hardness, and Wear Resistance of Laser Multilayer Cladding

NASA Astrophysics Data System (ADS)

Zhao, W.; Zha, G. C.; Xi, M. Z.; Gao, S. Y.

2018-03-01

A synchronous rolling method was proposed to assist laser multilayer cladding, and the effects of this method on microstructure, microhardness, and wear resistance were studied. Results show that the microstructure and mechanical properties of the traditional cladding layer exhibit periodic inhomogeneity. Synchronous rolling breaks the columnar dendrite crystals to improve the uniformity of the organization, and the residual plastic energy promotes the precipitation of strengthening phases, as CrB, M7C3, etc. The hardness and wear resistance of the extruded cladding layer increase significantly because of the grain refinement, formation of dislocations, and dispersion strengthening. These positive significances of synchronous rolling provide a new direction for laser cladding technology.

Semipolar III-nitride laser diodes with zinc oxide cladding.

PubMed

Myzaferi, Anisa; Reading, Arthur H; Farrell, Robert M; Cohen, Daniel A; Nakamura, Shuji; DenBaars, Steven P

2017-07-24

Incorporating transparent conducting oxide (TCO) top cladding layers into III-nitride laser diodes (LDs) improves device design by reducing the growth time and temperature of the p-type layers. We investigate using ZnO instead of ITO as the top cladding TCO of a semipolar (202¯1) III-nitride LD. Numerical modeling indicates that replacing ITO with ZnO reduces the internal loss in a TCO clad LD due to the lower optical absorption in ZnO. Lasing was achieved at 453 nm with a threshold current density of 8.6 kA/cm 2 and a threshold voltage of 10.3 V in a semipolar (202¯1) III-nitride LD with ZnO top cladding.

Corrosion Characteristics of Ni-Based Hardfacing Alloy Deposited on Stainless Steel Substrate by Laser Cladding

NASA Astrophysics Data System (ADS)

Awasthi, Reena; Abraham, Geogy; Kumar, Santosh; Bhattacharyya, Kaustava; Keskar, Nachiket; Kushwaha, R. P.; Rao, Ramana; Tewari, R.; Srivastava, D.; Dey, G. K.

2017-06-01

In this study, corrosion characteristics of a nickel-based Ni-Mo-Cr-Si hardfacing alloy having 32Mo, 15Cr, and 3Si (wt pct) as alloying elements, deposited on stainless steel SS316L substrate by laser cladding, have been presented. Corrosion behavior of the laser clad layer was evaluated in reducing (0.1 M HCl) and oxidizing (0.5 M HNO3) environments, in comparison with the reference substrate SS316L, using electrochemical potentiodynamic technique at room temperature. The corrosion mechanisms have been evaluated on the basis of microstructural and microchemical analysis using scanning electron microscopy attached with energy-dispersive spectrometry. Passivity behavior of the laser clad layer was studied in 0.5 M H2SO4, using the potentiostatic technique and analyzing the passive layer by X-ray photoelectron spectroscopy. Laser clad layer of Ni-Mo-Cr-Si exhibited higher pitting corrosion resistance in chloride (reducing) environment, indicated by much higher breakdown potential ( 0.8 VSCE) and the absence of pitting as compared to substrate SS316L ( 0.3 VSCE). However, in oxidizing (0.5 M HNO3) environment, both the laser clad layer and substrate SS316L showed excellent and similar corrosion resistance exhibiting high breakdown potential ( 0.85 VSCE) and wide passivation range ( 0.8 VSCE) with low passive current density ( 4 to 7 × 10-6 A/cm2). The stable passive layer formed on laser clad layer of Ni-Mo-Cr-Si after exposure in 0.5 M H2SO4 solution at constant potential 0.6 VSCE (within the passive range), consisted oxides of Mo as Mo+4 (MoO2) and Mo+6 (MoO4)-2, Cr as Cr3+ (mixture of both Cr2O3 and Cr (OH)3), and Si as Si4+(SiO2), which have contributed to passivation and repassivation and therefore excellent corrosion behavior.

Wear Characteristics of Ni-Based Hardfacing Alloy Deposited on Stainless Steel Substrate by Laser Cladding

NASA Astrophysics Data System (ADS)

Awasthi, Reena; Limaye, P. K.; Kumar, Santosh; Kushwaha, Ram P.; Viswanadham, C. S.; Srivastava, Dinesh; Soni, N. L.; Patel, R. J.; Dey, G. K.

2015-03-01

In this study, dry sliding wear characteristics of the Ni-based hardfacing alloy (Ni-Mo-Cr-Si) deposited on stainless steel SS316L substrate by laser cladding have been presented. Dry sliding wear behavior of the laser clad layer was evaluated against two different counter bodies, AISI 52100 chromium steel (~850 VHN) and tungsten carbide ball (~2200 VHN) to study both adhesive and abrasive wear characteristics, in comparison with the substrate SS316L using ball on plate reciprocating wear tester. The wear resistance was evaluated as a function of load and sliding speed for a constant sliding amplitude and sliding distance. The wear mechanisms were studied on the basis of wear surface morphology and microchemical analysis of the wear track using SEM-EDS. Laser clad layer of Ni-Mo-Cr-Si on SS316L exhibited much higher hardness (~700 VHN) than that of substrate SS316L (~200 VHN). The laser clad layer exhibited higher wear resistance as compared to SS316L substrate while sliding against both the counterparts. However, the improvement in the wear resistance of the clad layer as compared to the substrate was much higher while sliding against AISI 52100 chromium steel than that while sliding against WC, at the same contact stress intensity.

Electroslag Strip Cladding of Steam Generators With Alloy 690

DOE Office of Scientific and Technical Information (OSTI.GOV)

Consonni, M.; Maggioni, F.; Brioschi, F.

2006-07-01

The present paper details the results of electroslag cladding and tube-to-tubesheet welding qualification tests conducted by Ansaldo-Camozzi ESC with Alloy 690 (Alloy 52 filler metal) on steel for nuclear power stations' steam generators shell, tubesheet and head; the possibility of submerged arc cladding on first layer was also considered. Test results, in terms of chemical analysis, mechanical properties and microstructure are reproducible and confidently applicable to production cladding and show that electroslag process can be used for Alloy 52 cladding with exceptionally stable and regular operation and high productivity. The application of submerged arc cladding process to the first layermore » leads to a higher base metal dilution, which should be avoided. Moreover, though the heat affected zone is deeper with electroslag cladding, in both cases no coarsened grain zone is found due to recrystallization effect of second cladding layer. Finally, the application of electroslag process to cladding of Alloy 52 with modified chemical composition, was proved to be highly beneficial as it strongly reduces hot cracking sensitivity, which is typical of submerged arc cladded Alloy 52, both during tube-to-tubesheet welding and first re-welding. (authors)« less

Electron mobility in InGaN channel heterostructure field effect transistor structures with different barriers

NASA Astrophysics Data System (ADS)

Xie, J.; Leach, J. H.; Ni, X.; Wu, M.; Shimada, R.; Özgür, Ü.; Morkoç, H.

2007-12-01

InGaN possesses higher electron mobility and velocity than GaN, and therefore is expected to lead to relatively better performances for heterostructure field effect transistors (HFETs). However, the reported mobilities for AlGaN /InGaN HFETs are lower than GaN channel HFETs. To address this issue, we studied the effect of different barriers on the Hall mobility for InGaN channel HFETs grown by metal organic chemical vapor deposition. Unlike the conventional AlGaN barrier, the AlInN barrier can be grown at the same temperature as the InGaN channel layer, alleviating some of the technological roadblocks. Specifically, this avoids possible degradation of the thin InGaN channel during AlGaN growth at high temperatures; and paves the way for better interfaces. An undoped In0.18Al0.82N/AlN/In0.04Ga0.96N HFET structure exhibited a μH=820cm2/Vs, with a ns=2.12×1013cm-2 at room temperature. Moreover, with an In-doped AlGaN barrier, namely, Al0.24In0.01Ga0.75N, grown at 900°C, the μH increased to 1230cm2/Vs with a ns of 1.09×1013cm-2 for a similar InGaN channel. Furthermore, when the barrier was replaced by Al0.25Ga0.75N grown at 1030°C, μH dropped to 870cm2/Vs with ns of 1.26×1013cm-2 at room temperature. Our results suggest that to fully realize the potential of the InGaN channel HFETs, AlInN or AlInGaN should be used as the barrier instead of the conventional AlGaN barrier.

Perform Tests and Document Results and Analysis of Oxide Layer Effects and Comparisons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Collins, E. D.; DelCul, G. D.; Spencer, B. B.

2014-08-30

During the initial feasibility test using actual used nuclear fuel (UNF) cladding in FY 2012, an incubation period of 30–45 minutes was observed in the initial dry chlorination. The cladding hull used in the test had been previously oxidized in a dry air oxidation pretreatment prior to removal of the fuel. The cause of this incubation period was attributed to the resistance to chlorination of an oxide layer imparted by the dry oxidation pretreatment on the cladding. Subsequently in 2013, researchers at the Korea Atomic Energy Institute (KAERI) reported on their chlorination study [R1] on ~9-gram samples of unirradiated ZirloTMmore » cladding tubes that had been previously oxidized in air at 500oC for various time periods to impart oxide layers of varying thickness. In early 2014, discussions with Indefinite Delivery, Indefinite Quantity (IDIQ) contracted technical consultants from Westinghouse described their previous development (and patents) [R2] on methods of chemical washing to remove some or all of the hydrous oxide layer imparted on UNF cladding during irradiation in light water reactors (LWRs) . Thus, the Oak Ridge National Laboratory (ORNL) study, described herein, was planned to extend the KAERI study on the effects of anhydrous oxide layers, but on larger ~100-gram samples of unirradiated zirconium alloy cladding tubes, and to investigate the effects of various methods of chemical pretreatment prior to chlorination with 100% chlorine on the average reaction rates and Cl2 usage efficiencies.« less

The study of the modes of Ta-Zr powder mixture non-vacuum electron-beam cladding on the surface of the cp-titanium plates

NASA Astrophysics Data System (ADS)

Samoylenko, V. V.; Lozhkina, E. A.; Polyakov, I. A.; Lenivtseva, O. G.; Ivanchik, I. S.; Matts, O. E.

2016-11-01

The effect of the modes of non-vacuum electron-beam cladding of Ta-Zr powder mixtures on the structure and properties of the layers formed on the surface of cp-titanium were studied. The mode of the electron-beam alloying of titanium with zirconium and tantalum, which ensured the formation of a defect-free layer with a high content of alloying elements was selected. Metallographic examination indicated the presence of a dendritic- and plate-type structure of cladded layers. The microhardness of the layers, formed at the optimum mode, was not changed in the cross section and was equal to 450 HV.

Interfacial Characterization of Dissimilar Joints Between Al/Mg/Al-Trilayered Clad Sheet to High-Strength Low-Alloy Steel

NASA Astrophysics Data System (ADS)

Macwan, A.; Jiang, X. Q.; Chen, D. L.

2015-07-01

Magnesium (Mg) alloys are increasingly used in the automotive and aerospace sectors to reduce vehicle weight. Al/Mg/Al tri-layered clad sheets are deemed as a promising alternative to improve the corrosion resistance and formability of Mg alloys. The structural application of Al/Mg/Al tri-layered clad sheets inevitably involves welding and joining in the multi-material vehicle body manufacturing. This study aimed to characterize the bonding interface microstructure of the Al/Mg/Al-clad sheet to high-strength low-alloy steel with and without Zn coating using ultrasonic spot welding at different levels of welding energy. It was observed that the presence of Zn coating improved the bonding at the interface due to the formation of Al-Zn eutectic structure via enhanced diffusion. At a higher level of welding energy, characteristic flow patterns of Zn into Al-clad layer were observed with an extensive penetration mainly along some high angle grain boundaries. The dissimilar joints without Zn coating made at a high welding energy of 800 J failed partially from the Al/Fe weld interface and partially from the Al/Mg clad interface, while the joints with Zn coating failed from the Al/Mg clad interface due to the presence of brittle Al12Mg17 phase.

Research on the transformation mechanism of graphite phase and microstructure in the heated region of gray cast iron by laser cladding

NASA Astrophysics Data System (ADS)

Liu, Yancong; Zhan, Xianghua; Yi, Peng; Liu, Tuo; Liu, Benliang; Wu, Qiong

2018-03-01

A double-track lap cladding experiment involving gray cast iron was established to investigate the transformation mechanism of graphite phase and microstructure in a laser cladding heated region. The graphite phase and microstructure in different heated regions were observed under a microscope, and the distribution of elements in various heated regions was analyzed using an electron probe. Results show that no graphite existed in the cladding layer and in the middle and upper parts of the binding region. Only some of the undissolved small graphite were observed at the bottom of the binding region. Except the refined graphite size, the morphological characteristics of substrate graphite and graphite in the heat-affected zone were similar. Some eutectic clusters, which grew along the direction of heat flux, were observed in the heat-affected zone whose microstructure was transformed into a mixture of austenite, needle-like martensite, and flake graphite. Needle-like martensite around graphite was fine, but this martensite became sparse and coarse when it was away from graphite. Some martensite clusters appeared in the local area near the binding region, and the carbon atoms in the substrate did not diffuse into the cladding layer through laser cladding, which only affected the bonding area and the bottom of the cladding layer.

A normally-off fully AlGaN HEMT with high breakdown voltage and figure of merit for power switch applications

NASA Astrophysics Data System (ADS)

Ebrahimi, Behzad; Asad, Mohsen

2015-07-01

In this paper, we propose a fully AlGaN high electron mobility (HEMT) in which the gate electrode, the barrier and the channel are all AlGaN. The p-type AlGaN gate facilitates the normally-off operation to be compatible with the state-of-the-art power amplifiers. In addition, the AlGaN channel increases the breakdown voltage (VBR) to 598 V due to the higher breakdown field of AlGaN compared to GaN. To assess the efficiency of the proposed structure, its characteristics are compared with the conventional and recently proposed structures. The two-dimensional device simulation results show that the proposed structure has the highest threshold voltage (Vth) and the VBR with the moderately low ON-resistance (RON). These features lead to the highest figure of merit (2.49 × 1012) among the structures which is 83%, 59%, 47% and 49% more than those of the conventional, with a field plate, AlGaN gate and AlGaN channel structures, respectively.

Enhancement of optical polarization degree of AlGaN quantum wells by using staggered structure.

PubMed

Wang, Weiying; Lu, Huimin; Fu, Lei; He, Chenguang; Wang, Mingxing; Tang, Ning; Xu, Fujun; Yu, Tongjun; Ge, Weikun; Shen, Bo

2016-08-08

Staggered AlGaN quantum wells (QWs) are designed to enhance the transverse-electric (TE) polarized optical emission in deep ultraviolet (DUV) light- emitting diodes (LED). The optical polarization properties of the conventional and staggered AlGaN QWs are investigated by a theoretical model based on the k·p method as well as polarized photoluminescence (PL) measurements. Based on an analysis of the valence subbands and momentum matrix elements, it is found that AlGaN QWs with step-function-like Al content in QWs offers much stronger TE polarized emission in comparison to that from conventional AlGaN QWs. Experimental results show that the degree of the PL polarization at room temperature can be enhanced from 20.8% of conventional AlGaN QWs to 40.2% of staggered AlGaN QWs grown by MOCVD, which is in good agreement with the theoretical simulation. It suggests that polarization band engineering via staggered AlGaN QWs can be well applied in high efficiency AlGaN-based DUV LEDs.

Characteristic optimization of 1.55-μm InGaAsP/InP high-power diode laser

NASA Astrophysics Data System (ADS)

Ke, Qing; Tan, Shaoyang; Zhai, Teng; Zhang, Ruikang; Lu, Dan; Ji, Chen

2014-11-01

A comprehensive design optimization of 1.55-μm high power InGaAsP/InP board area lasers is performed aiming at increasing the internal quantum efficiency (IQE) while maintaing a low internal loss of the device as well. The P-doping profile and separate confinement heterostructure (SCH) layer band gap are optimized respectively with commercial software Crosslight. Analysis of lasers with different p-doping profiles shows that, although heavy doping in P-cladding layer increases the internal loss of the device, it ensures a high IQE because higher energy barrier at the SCH/P-cladding interface as a result of heavy doping helps reduce the carrier leakage from the waveguide to the InP-cladding layer. The band gap of the SCH layer are also optimized for high slope efficiency. Smaller band gap helps reduce the vertical carrier leakage from the waveguide to the P-cladding layer, but the corresponding higher carrier concentration in SCH layer will cause some radiative recombination, thus influencing the IQE. And as the injection current increases, the carrier concentration increases faster with smaller band gap, therefore, the output power saturates sooner. An optimized band gap in SCH layer of approximately 1.127eV and heavy doping up to 1e18/cm3 at the SCH/P-cladding interface are identified for our high power laser design, and we achieved a high IQE of 94% and internal loss of 2.99/cm for our design.

Microstructural characterization of AA5183 aluminum clad AISI 1018 steel prepared by electro spark deposition

NASA Astrophysics Data System (ADS)

Rastkerdar, E.; Aghajani, H.; Kianvash, A.; Sorrell, C. C.

2018-04-01

The application of a simple and effective technique, electro spark deposition (ESD), to create aluminum clad steel plate has been studied. AA5183 aluminum rods were used as the rotating electrode for cladding of the AISI 1018 steel. The microstructure of the interfacial zone including the intermetallic compounds (IMC) layer and the clad metal have been investigated by scanning electron microscopy (SEM) equipped with energy dispersive spectroscopy (EDS) and transmission electron microscopy (TEM and STEM). According to the results sound aluminum clad with thickness up to 25–30 μm can be achieved. Very thin (<4 μm) IMC layer was formed at the Al/Fe interface and the structural (electron diffraction pattern) and chemical analysis (STEM) conducted by TEM confirmed that the layer is constituted of Fe rich phases, both implying a much improved mechanical properties. Investigation of the orientations of phases at the interfacial zone confirmed absence of any preferred orientation.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Veselov, D. A., E-mail: dmitriy90@list.ru; Shashkin, I. S.; Bakhvalov, K. V.

Semiconductor lasers based on MOCVD-grown AlGaInAs/InP separate-confinement heterostructures are studied. It is shown that raising only the energy-gap width of AlGaInAs-waveguides without the introduction of additional barriers results in more pronounced current leakage into the cladding layers. It is found that the introduction of additional barrier layers at the waveguide–cladding-layer interface blocks current leakage into the cladding layers, but results in an increase in the internal optical loss with increasing pump current. It is experimentally demonstrated that the introduction of blocking layers makes it possible to obtain maximum values of the internal quantum efficiency of stimulated emission (92%) and continuouswavemore » output optical power (3.2 W) in semiconductor lasers in the eye-safe wavelength range (1400–1600 nm).« less

Microstructural characteristics of HIP-bonded monolithic nuclear fuels with a diffusion barrier

NASA Astrophysics Data System (ADS)

Jue, Jan-Fong; Keiser, Dennis D.; Breckenridge, Cynthia R.; Moore, Glenn A.; Meyer, Mitchell K.

2014-05-01

Due to the limitation of maximum uranium load achievable by dispersion fuel type, the Global Threat Reduction Initiative is developing an advanced monolithic fuel to convert US high-performance research reactors to low-enriched uranium. Hot-isostatic-press (HIP) bonding was the single process down-selected to bond monolithic U-Mo fuel meat to aluminum alloy cladding. A diffusion barrier was applied to the U-Mo fuel meat by roll-bonding process to prevent extensive interaction between fuel meat and aluminum-alloy cladding. Microstructural characterization was performed on fresh fuel plates fabricated at Idaho National Laboratory. Interfaces between the fuel meat, the cladding, and the diffusion barrier, as well as between the U-10Mo fuel meat and the Al-6061 cladding, were characterized by scanning electron microscopy. Preliminary results indicate that the interfaces contain many different phases while decomposition, second phases, and chemical banding were also observed in the fuel meat. The important attributes of the HIP-bonded monolithic fuel are:

Microstructural Characteristics of HIP-bonded Monolithic Nuclear Fuels with a Diffusion Barrier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jan-Fong Jue; Dennis D. Keiser, Jr.; Cynthia R. Breckenridge

Due to the limitation of maximum uranium load achievable by dispersion fuel type, the Global Threat Reduction Initiative (GTRI) is developing an advanced monolithic fuel to convert US high performance research reactors to low-enriched uranium. Hot-isostatic-press bonding was the single process down-selected to bond monolithic U-Mo fuel meat to aluminum alloy cladding. A diffusion barrier was applied to the U–Mo fuel meat by roll-bonding process to prevent extensive interaction between fuel meat and aluminum-alloy cladding. Microstructural characterization was performed on fresh fuel plates fabricated at Idaho National Laboratory. Interfaces between fuel meat, cladding, and diffusion barrier, as well as U–10Momore » fuel meat and Al–6061 cladding were characterized by scanning electron microscopy. Preliminary results indicate that the interfaces contain many different phases while decomposition, second phases, and chemical banding were also observed in the fuel meat. The important attributes of the HIP-bonded monolithic fuel are • A typical Zr diffusion barrier of thickness 25 µm • Transverse cross section that exhibits relatively equiaxed grains with an average grain diameter of 10 µm • Chemical banding, in some areas more than 100 µm in length, that is very pronounced in longitudinal (i.e., rolling) direction with Mo concentration varying from 7–13 wt% • Decomposed areas containing plate-shaped low-Mo phase • A typical Zr/cladding interaction layer of thickness 1-2 µm • A visible UZr2 bearing layer of thickness 1-2 µm • Mo-rich precipitates (mainly Mo2Zr, forming a layer in some areas) followed by a Mo-depleted sub-layer between the visible UZr2-bearing layer and the U–Mo matrix • No excessive interaction between cladding and the uncoated fuel edge • Cladding-to-cladding bonding that exhibits no cracks or porosity with second phases high in Mg, Si, and O decorating the bond line. • Some of these attributes might be critical to the irradiation performance of monolithic U-10Mo nuclear fuel. There are several issues or concerns that warrant more detailed study, such as precipitation along cladding-to-cladding bond line, chemical banding, uncovered fuel-zone edge, and interaction layer between U–Mo fuel meat and zirconium. Future post-irradiation examination results will focus, among other things, on identifying in-reactor failure mechanisms and, eventually, directing further fresh fuel characterization efforts.« less

Improving the tribocorrosion resistance of Ti6Al4V surface by laser surface cladding with TiNiZrO2 composite coating

NASA Astrophysics Data System (ADS)

Obadele, Babatunde Abiodun; Andrews, Anthony; Mathew, Mathew T.; Olubambi, Peter Apata; Pityana, Sisa

2015-08-01

Ti6Al4V alloy was laser cladded with titanium, nickel and zirconia powders in different ratio using a 2 kW CW ytterbium laser system (YLS). The microstructures of the cladded layers were examined using field emission scanning electron microscopy (FESEM) equipped with energy dispersive X-ray spectroscopy (EDS) and X-ray diffractometry (XRD). Corrosion and tribocorrosion tests were performed on the cladded surface in 1 M H2SO4 solution. The microstructure revealed the transformation from a dense dendritic structure in TiNi coating to a flower-like structure observed in TiNiZrO2 cladded layers. There was a significant increase in surface microindentation hardness values of the cladded layers due to the present of hard phase ZrO2 particles. The results obtained show that addition of ZrO2 improves the corrosion resistance property of TiNi coating but decrease the tribocorrosion resistance property. The surface hardening effect induced by ZrO2 addition, combination of high hardness of Ti2Ni phase could be responsible for the mechanical degradation and chemical wear under sliding conditions.

High-frequency piezopolymer transducers with a copper-clad polyimide backing layer

PubMed Central

Ketterling, Jeffrey A.; Aristizábal, Orlando; Turnbull, Daniel H.

2006-01-01

The effect of a copper-clad polyimide (CCP) backing layer on piezopolymer transducer performance is evaluated. High-frequency, spherically curved polyvinylidene fluoride (PVDF) transducers with and without a CCP backing layer are electrically and acoustically tested. The results showed very similar operating characteristics. B-mode in vivo images of a mouse embryo also showed no qualitative differences indicating the CCP backing layer does not effect transducer performance. PMID:16889345

Thermal etching rate of GaN during MOCVD growth interruption in hydrogen and ammonia ambient determined by AlGaN/GaN superlattice structures

NASA Astrophysics Data System (ADS)

Zhang, Feng; Ikeda, Masao; Zhang, Shuming; Liu, Jianping; Tian, Aiqin; Wen, Pengyan; Cheng, Yang; Yang, Hui

2017-10-01

Thermal etching effect of GaN during growth interruption in the metalorganic chemical vapor deposition reactor was investigated in this paper. The thermal etching rate was determined by growing a series of AlGaN/GaN superlattice structures with fixed GaN growth temperature at 735 °C and various AlGaN growth temperature changing from 900 °C to 1007 °C. It was observed that the GaN layer was etched off during the growth interruption when the growth temperature ramped up to AlGaN growth temperature. The etching thickness was determined by high resolution X-ray diffractometer and the etching rate was deduced accordingly. An activation energy of 2.53 eV was obtained for the thermal etching process.

Traps in AlGaN /GaN/SiC heterostructures studied by deep level transient spectroscopy

NASA Astrophysics Data System (ADS)

Fang, Z.-Q.; Look, D. C.; Kim, D. H.; Adesida, I.

2005-10-01

AlGaN /GaN/SiC Schottky barrier diodes (SBDs), with and without Si3N4 passivation, have been characterized by temperature-dependent current-voltage and capacitance-voltage measurements, and deep level transient spectroscopy (DLTS). A dominant trap A1, with activation energy of 1.0 eV and apparent capture cross section of 2×10-12cm2, has been observed in both unpassivated and passivated SBDs. Based on the well-known logarithmic dependence of DLTS peak height with filling pulse width for a line-defect related trap, A1, which is commonly observed in thin GaN layers grown by various techniques, is believed to be associated with threading dislocations. At high temperatures, the DLTS signal sometimes becomes negative, likely due to an artificial surface-state effect.

Device Performance and Reliability Improvements of AlGaBN/GaN/Si MOSFET

DTIC Science & Technology

2016-02-04

Metal insulator semiconductor AlGaN /GaN high electron mobility transistors (MISHEMTs) are promising for power device applications due to a lower leakage...current than the conventional Schottky AlGaN/GaN HEMTs.1–3 Among a large number of insulator materials, an Al2O3 dielectric layer, deposited by...atomic layer deposition (ALD), is often employed as the gate insulator because of a large band gap (and the resultant high conduction band offset on

Black optic display

DOEpatents

Veligdan, James T.

1997-01-01

An optical display includes a plurality of stacked optical waveguides having first and second opposite ends collectively defining an image input face and an image screen, respectively, with the screen being oblique to the input face. Each of the waveguides includes a transparent core bound by a cladding layer having a lower index of refraction for effecting internal reflection of image light transmitted into the input face to project an image on the screen, with each of the cladding layers including a cladding cap integrally joined thereto at the waveguide second ends. Each of the cores is beveled at the waveguide second end so that the cladding cap is viewable through the transparent core. Each of the cladding caps is black for absorbing external ambient light incident upon the screen for improving contrast of the image projected internally on the screen.

Restoration of Worn Movable Bridge Props with Use of Bronze Claddings.

PubMed

Viňáš, Ján; Vrabeľ, Marek; Greš, Miroslav; Brezina, Jakub; Sabadka, Dušan; Fedorko, Gabriel; Molnár, Vieroslav

2018-03-21

This article examined the possibility of using CuSn6P claddings in sliding bearing renovation of movable pontoon bridge props. The bronze layer was welded on cylinders of the high-strength steel S355J0WP EN 10155-93, in an inert atmosphere using an automated welding method (gas tungsten arc welding). Pulsed arc welding was used to minimize the effects of heat on the cladding area, while also accounting for the differences in the physical properties of the joined metals. The sliding bearing was created in two layers. The quality of the cladding layer was evaluated by nondestructive and/or destructive tests. The quality of the surface was assessed by visual inspection (visual testing) in accordance with the EN ISO 17637 standard. The quality of the claddings was evaluated by metallographic analysis, performed using light microscopy. The microhardness values of a few weld areas were determined by Vickers tests, performed according to the EN ISO 9015-2 standard. The analyses confirmed that the welding parameters and filler material used resulted in high-quality weld joints with no internal (subsurface) or metallurgical defects.

Restoration of Worn Movable Bridge Props with Use of Bronze Claddings

PubMed Central

Viňáš, Ján; Vrabeľ, Marek; Greš, Miroslav; Brezina, Jakub; Sabadka, Dušan; Fedorko, Gabriel

2018-01-01

This article examined the possibility of using CuSn6P claddings in sliding bearing renovation of movable pontoon bridge props. The bronze layer was welded on cylinders of the high-strength steel S355J0WP EN 10155-93, in an inert atmosphere using an automated welding method (gas tungsten arc welding). Pulsed arc welding was used to minimize the effects of heat on the cladding area, while also accounting for the differences in the physical properties of the joined metals. The sliding bearing was created in two layers. The quality of the cladding layer was evaluated by nondestructive and/or destructive tests. The quality of the surface was assessed by visual inspection (visual testing) in accordance with the EN ISO 17637 standard. The quality of the claddings was evaluated by metallographic analysis, performed using light microscopy. The microhardness values of a few weld areas were determined by Vickers tests, performed according to the EN ISO 9015–2 standard. The analyses confirmed that the welding parameters and filler material used resulted in high-quality weld joints with no internal (subsurface) or metallurgical defects. PMID:29561762

Microstructural Evolution of AerMet100 Steel Coating on 300M Steel Fabricated by Laser Cladding Technique

NASA Astrophysics Data System (ADS)

Liu, Jian; Li, Jia; Cheng, Xu; Wang, Huaming

2018-02-01

In this paper, the process of coating AerMet100 steel on forged 300M steel with laser cladding was investigated, with a thorough analysis of the chemical composition, microstructure, and hardness of the substrate and the cladding layer as well as the transition zone. Results show that the composition and microhardness of the cladding layer are macroscopically homogenous with the uniformly distributed bainite and a small amount of retained austenite in martensite matrix. The transition zone, which spans approximately 100 μm, yields a gradual change of composition from the cladding layer to 300M steel matrix. The heat-affected zone (HAZ) can be divided into three zones: the sufficiently quenched zone (SQZ), the insufficiently quenched zone (IQZ), and the high tempered zone (HTZ). The SQZ consists of martensitic matrix and bainite, as for the IQZ and the HTZ the microstructures are martensite + tempered martensite and tempered martensite + ferrite, respectively. These complicated microstructures in the HAZ are caused by different peak heating temperatures and heterogeneous microstructures of the as-received 300M steel.

Mechanisms of Loss in Internal Quantum Efficiency in III-Nitride-based Blue-and Green-Light Emitting Diodes

NASA Astrophysics Data System (ADS)

Huang, Li

The overarching goals of the research conducted for this dissertation have been to understand the scientific reasons for the losses in the internal quantum efficiency (IQE) in Group III-nitride-based blue and especially green light-emitting diodes (LEDs) containing a multi-quantum well (MQW) active region and to simultaneously develop LED epitaxial structures to ameliorate these losses. The p-type AlGaN EBL was determined to be both mandatory and effective in the prevention of electron overflow from the MQW region into the p-type cladding layer and the resultant lowering of the IQE. The overflow phenomenon was partially due to the low concentration (˜ 5 x 1017 cm-3) and mobility (˜ 10 cm2/(V•s)) of the holes injected into the active region. Electroluminescence (EL) studies of LEDs without an EBL revealed a dominant emission from donor-acceptor pair recombination in the p-type GaN layer. The incorporation of a 90 nm compositionally graded In0-0.1 Ga1-0.9N buffer layer between each MQW and n-GaN cladding layer grown on an Al/SiC substrate resulted in an increase in the luminescence intensity and a blue-shift in the emission wavelength, as observed in photoluminescence (PL) spectra. The graded InGaN buffer layer reduced the stress and thus the piezoelectric field across the MQW; this improved the electron/hole overlap that, in turn, resulted in an enhanced radiative recombination rate and an increase in efficiency. A direct correlation was observed between an increase in the IQE measured in temperature-dependent PL (TDPL) and an increase in the roughness of all the upper InGaN QW/GaN barrier interfaces, as determined using cross-sectional transmission electron microscopy of the MQW. These results agreed in general with the average surface roughness values of the pit-free region on the top GaN barrier determined via atomic force microscopy and the average roughness values of all the interfaces in the MQW calculated from the FWHM of the emission peak in the PL spectra acquired at 10 K for LED structures grown on both SiC and GaN substrates. This improvement occurred as a result of carrier localization at the rougher interfaces that, in turn, resulted in shorter carrier lifetimes and faster decay rates, as determined using time-resolved PL. The peak current densities determined from the curves of external quantum efficiency as a function of current density calculated from EL spectra acquired from a set of LEDs having 3 QWs, 5 QWs, and 6 QWs were 63 A/cm2, 78 A/cm2 and 78 A/cm2, respectively. These data indicated that the minority carrier (holes) in our powered devices penetrated into at least the 4th QW from the top p-type cladding layer. The peak emission from these LEDs occurred at 522 nm. The hole density decreased with distance away from the top p-type layer. Finally, a new process route was developed in this research for the epitaxial deposition of GaN(0001) thin films on chemo-mechanically polished GaN(0001) substrates. The latter possessed threading dislocations (TDs) having a density of the order of 5 x 107 cm-2, predominantly edge in character and oriented along [0001]. Step-flow-controlled growth of the films was achieved; thus, no additional TDs were generated at the film/substrate interface. The density of V-defects in InGaN films and in subsequently grown MQWs containing In0.26Ga0.74N wells grown on the GaN substrates was also reduced to within an order of 107 cm -2. The density of the latter defects was determined to be a function of both the density of the TDs and the growth temperature when the latter was > 900 °C. (Abstract shortened by UMI.)

A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN

NASA Astrophysics Data System (ADS)

Haidet, Brian B.; Bryan, Isaac; Reddy, Pramod; Bryan, Zachary; Collazo, Ramón; Sitar, Zlatko

2015-06-01

Ohmic contacts to AlGaN grown on sapphire substrates have been previously demonstrated for various compositions of AlGaN, but contacts to AlGaN grown on native AlN substrates are more difficult to obtain. In this paper, a model is developed that describes current flow through contacts to Si-doped AlGaN. This model treats the current through reverse-biased Schottky barriers as a consequence of two different tunneling-dependent conduction mechanisms in parallel, i.e., Fowler-Nordheim emission and defect-assisted Frenkel-Poole emission. At low bias, the defect-assisted tunneling dominates, but as the potential across the depletion region increases, tunneling begins to occur without the assistance of defects, and the Fowler-Nordheim emission becomes the dominant conduction mechanism. Transfer length method measurements and temperature-dependent current-voltage (I-V) measurements of Ti/Al-based contacts to Si-doped AlGaN grown on sapphire and AlN substrates support this model. Defect-assisted tunneling plays a much larger role in the contacts to AlGaN on sapphire, resulting in nearly linear I-V characteristics. In contrast, contacts to AlGaN on AlN show limited defect-assisted tunneling appear to be only semi-Ohmic.

Microstructure and properties of laser-clad high-temperature wear-resistant alloys

NASA Astrophysics Data System (ADS)

Yang, Yongqiang

1999-02-01

A 2-kW CO 2 laser with a powder feeder was used to produce alloy coatings with high temperature-wear resistance on the surface of steel substrates. To analyze the microstructure and microchemical composition of the laser-clad layers, a scanning electron microscope (SEM) equipped with an energy dispersive X-ray microanalysis system was employed. X-ray diffraction techniques were applied to characterize the phases formed during the cladding process. The results show that the microstructure of the cladding alloy consists mainly of many dispersed particles (W 2C, (W,Ti)C 1- x, WC), a lamellar eutectic carbide M 12C, and an (f.c.c) matrix. Hardness tested at room and high temperature showed that the laser-clad zone has a moderate room temperature hardness and relatively higher elevated temperature hardness. The application of the laser-clad layer to a hot tool was very successful, and its operational life span was prolonged 1 to 4 times.

Direct observation of trapped charges under field-plate in p-GaN gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation

NASA Astrophysics Data System (ADS)

Katsuno, Takashi; Manaka, Takaaki; Soejima, Narumasa; Iwamoto, Mitsumasa

2017-02-01

Trapped charges underneath the field-plate (FP) in a p-gallium nitride (GaN) gate AlGaN/ GaN high electron mobility transistor device were visualized by using electric field-induced optical second-harmonic generation imaging. Second-harmonic (SH) signals in the off-state of the device with FP indicated that the electric field decreased at the p-GaN gate edge and concentrated at the FP edge. Nevertheless, SH signals originating from trapped charges were slightly observed at the p-GaN gate edge and were not observed at the FP edge in the on-state. Compared with the device without FP, reduction of trapped charges at the p-GaN gate edge of the device with FP is attributed to attenuation of the electric field with the aid of the FP. Negligible trapped charges at the FP edge is owing to lower trap density of the SiO2/AlGaN interface at the FP edge compared with that of the SiO2/p-GaN sidewall interface at the p-GaN gate edge and attenuated electric field by the thickness of the SiO2 passivation layer on the AlGaN surface.

Bioactivity of fluorapatite/alumina composite coatings deposited on Ti6Al4V substrates by laser cladding

NASA Astrophysics Data System (ADS)

Chien, C. S.; Liu, C. W.; Kuo, T. Y.; Wu, C. C.; Hong, T. F.

2016-04-01

Hydroxyapatite (HA) is one of the most commonly used coating materials for metal implants. However, following high-temperature deposition, HA easily decomposes into an unstable phase or forms an amorphous phase, and hence, the long-term stability of the implant is reduced. Accordingly, the present study investigates the use of fluorapatite (FA) fortified with 20 wt% alumina (α-Al2O3) as an alternative biomedical coating material. The coatings are deposited on Ti6Al4V substrates using a Nd:YAG laser cladding process performed with laser powers and travel speeds of 400 W/200 mm/min, 800 W/400 mm/min and 1200 W/600 mm/min, respectively. The results show that for all of the specimens, a strong metallurgical bond is formed at the interface between the coating layer and the transition layer due to melting and diffusion. The XRD analysis results reveal that the cladding layers in all of the specimens consist mainly of FA, β-TCP, CaF2, Ti and θ-Al2O3 phases. In addition, the cladding layers of the specimens prepared using laser powers of 400 and 800 W also contain CaTiO3 and CaAl2O4, while that of the specimen clad using a power of 1200 W contains TTCP and CaO. Following immersion in simulated body fluid for 14 days, all of the specimens precipitate dense bone-like apatite and exhibit excellent bioactivity. However, among all of the specimens, the specimen that is prepared with a laser power of 800 W shows the best biological activity due to the presence of residual FA, apatite-generating CaTiO3 and a rough cladding layer surface.

Adjusting resonant wavelengths and spectral shapes of ring resonators using a cladding SiN layer or KOH solution.

PubMed

Park, Sahnggi; Kim, Kap-Joong; Lee, Jong-Moo; Kim, In-Gyoo; Kim, Gyungock

2009-07-06

It is shown that the resonant frequencies and the transmission spectra of ring resonators can be adjusted by depositing or etching the cladding nitride layer on the ring waveguide without introducing an extra loss or extra variations of channel spacing. The cladding nitride layer increases the minimum width of the gap in the coupling region to larger than 150nm which makes it possible to consider photolithography instead of E-beam lithography for the typical design rule of ring filters. KOH silicon etching can also adjust not only the resonance frequencies but also coupling coefficients with a small sacrifice of guiding loss.

Porous silicon omnidirectional mirrors and distributed Bragg reflectors for planar waveguide applications

NASA Astrophysics Data System (ADS)

Xifré-Pérez, E.; Marsal, L. F.; Ferré-Borrull, J.; Pallarès, J.

2007-09-01

The use of omnidirectional mirrors (an special case of distributed Bragg reflectors) as cladding for planar waveguides is proposed and analyzed. The proposed structure is an all-porous silicon multilayer consisting of a core layer inserted between two omnidirectional mirrors. The transfer matrix method is applied for the modal analysis. The influence of the parameters of the waveguide structure on the guided modes is analyzed. These parameters are the layer thickness and number of periods of the omnidirectional mirror, and the refractive index and thickness of the core layer. Finally, the confinement of the omnidirectional mirror cladding is analyzed with respect to two other different distributed Bragg reflector claddings.

A study on wear resistance and microcrack of the Ti 3Al/TiAl + TiC ceramic layer deposited by laser cladding on Ti-6Al-4V alloy

NASA Astrophysics Data System (ADS)

Li, Jianing; Chen, Chuanzhong; Squartini, Tiziano; He, Qingshan

2010-12-01

Laser cladding of the Al + TiC alloy powder on Ti-6Al-4V alloy can form the Ti 3Al/TiAl + TiC ceramic layer. In this study, TiC particle-dispersed Ti 3Al/TiAl matrix ceramic layer on the Ti-6Al-4V alloy by laser cladding has been researched by means of X-ray diffraction, scanning electron microscope, electron probe micro-analyzer, energy dispersive spectrometer. The main difference from the earlier reports is that Ti 3Al/TiAl has been chosen as the matrix of the composite coating. The wear resistance of the Al + 30 wt.% TiC and the Al + 40 wt.% TiC cladding layer was approximately 2 times greater than that of the Ti-6Al-4V substrate due to the reinforcement of the Ti 3Al/TiAl + TiC hard phases. However, when the TiC mass percent was above 40 wt.%, the thermal stress value was greater than the materials yield strength limit in the ceramic layer, the microcrack was present and its wear resistance decreased.

Parametric Study and Multi-Criteria Optimization in Laser Cladding by a High Power Direct Diode Laser

NASA Astrophysics Data System (ADS)

Farahmand, Parisa; Kovacevic, Radovan

2014-12-01

In laser cladding, the performance of the deposited layers subjected to severe working conditions (e.g., wear and high temperature conditions) depends on the mechanical properties, the metallurgical bond to the substrate, and the percentage of dilution. The clad geometry and mechanical characteristics of the deposited layer are influenced greatly by the type of laser used as a heat source and process parameters used. Nowadays, the quality of fabricated coating by laser cladding and the efficiency of this process has improved thanks to the development of high-power diode lasers, with power up to 10 kW. In this study, the laser cladding by a high power direct diode laser (HPDDL) as a new heat source in laser cladding was investigated in detail. The high alloy tool steel material (AISI H13) as feedstock was deposited on mild steel (ASTM A36) by a HPDDL up to 8kW laser and with new design lateral feeding nozzle. The influences of the main process parameters (laser power, powder flow rate, and scanning speed) on the clad-bead geometry (specifically layer height and depth of the heat affected zone), and clad microhardness were studied. Multiple regression analysis was used to develop the analytical models for desired output properties according to input process parameters. The Analysis of Variance was applied to check the accuracy of the developed models. The response surface methodology (RSM) and desirability function were used for multi-criteria optimization of the cladding process. In order to investigate the effect of process parameters on the molten pool evolution, in-situ monitoring was utilized. Finally, the validation results for optimized process conditions show the predicted results were in a good agreement with measured values. The multi-criteria optimization makes it possible to acquire an efficient process for a combination of clad geometrical and mechanical characteristics control.

Geometry characteristics modeling and process optimization in coaxial laser inside wire cladding

NASA Astrophysics Data System (ADS)

Shi, Jianjun; Zhu, Ping; Fu, Geyan; Shi, Shihong

2018-05-01

Coaxial laser inside wire cladding method is very promising as it has a very high efficiency and a consistent interaction between the laser and wire. In this paper, the energy and mass conservation law, and the regression algorithm are used together for establishing the mathematical models to study the relationship between the layer geometry characteristics (width, height and cross section area) and process parameters (laser power, scanning velocity and wire feeding speed). At the selected parameter ranges, the predicted values from the models are compared with the experimental measured results, and there is minor error existing, but they reflect the same regularity. From the models, it is seen the width of the cladding layer is proportional to both the laser power and wire feeding speed, while it firstly increases and then decreases with the increasing of the scanning velocity. The height of the cladding layer is proportional to the scanning velocity and feeding speed and inversely proportional to the laser power. The cross section area increases with the increasing of feeding speed and decreasing of scanning velocity. By using the mathematical models, the geometry characteristics of the cladding layer can be predicted by the known process parameters. Conversely, the process parameters can be calculated by the targeted geometry characteristics. The models are also suitable for multi-layer forming process. By using the optimized process parameters calculated from the models, a 45 mm-high thin-wall part is formed with smooth side surfaces.

High-Performance Schottky Diode Gas Sensor Based on the Heterojunction of Three-Dimensional Nanohybrids of Reduced Graphene Oxide-Vertical ZnO Nanorods on an AlGaN/GaN Layer.

PubMed

Minh Triet, Nguyen; Thai Duy, Le; Hwang, Byeong-Ung; Hanif, Adeela; Siddiqui, Saqib; Park, Kyung-Ho; Cho, Chu-Young; Lee, Nae-Eung

2017-09-13

A Schottky diode based on a heterojunction of three-dimensional (3D) nanohybrid materials, formed by hybridizing reduced graphene oxide (RGO) with epitaxial vertical zinc oxide nanorods (ZnO NRs) and Al 0.27 GaN 0.73 (∼25 nm)/GaN is presented as a new class of high-performance chemical sensors. The RGO nanosheet layer coated on the ZnO NRs enables the formation of a direct Schottky contact with the AlGaN layer. The sensing results of the Schottky diode with respect to NO 2 , SO 2 , and HCHO gases exhibit high sensitivity (0.88-1.88 ppm -1 ), fast response (∼2 min), and good reproducibility down to 120 ppb concentration levels at room temperature. The sensing mechanism of the Schottky diode can be explained by the effective modulation of the reverse saturation current due to the change in thermionic emission carrier transport caused by ultrasensitive changes in the Schottky barrier of a van der Waals heterostructure between RGO and AlGaN layers upon interaction with gas molecules. Advances in the design of a Schottky diode gas sensor based on the heterojunction of high-mobility two-dimensional electron gas channel and highly responsive 3D-engineered sensing nanomaterials have potential not only for the enhancement of sensitivity and selectivity but also for improving operation capability at room temperature.

Effect of Temperature and Sheet Temper on Isothermal Solidification Kinetics in Clad Aluminum Brazing Sheet

NASA Astrophysics Data System (ADS)

Benoit, Michael J.; Whitney, Mark A.; Wells, Mary A.; Winkler, Sooky

2016-09-01

Isothermal solidification (IS) is a phenomenon observed in clad aluminum brazing sheets, wherein the amount of liquid clad metal is reduced by penetration of the liquid clad into the core. The objective of the current investigation is to quantify the rate of IS through the use of a previously derived parameter, the Interface Rate Constant (IRC). The effect of peak temperature and initial sheet temper on IS kinetics were investigated. The results demonstrated that IS is due to the diffusion of silicon (Si) from the liquid clad layer into the solid core. Reduced amounts of liquid clad at long liquid duration times, a roughened sheet surface, and differences in resolidified clad layer morphology between sheet tempers were observed. Increased IS kinetics were predicted at higher temperatures by an IRC model as well as by experimentally determined IRC values; however, the magnitudes of these values are not in good agreement due to deficiencies in the model when applied to alloys. IS kinetics were found to be higher for sheets in the fully annealed condition when compared with work-hardened sheets, due to the influence of core grain boundaries providing high diffusivity pathways for Si diffusion, resulting in more rapid liquid clad penetration.

Characterizing the effects of cladding on semi-elliptical longitudinal surface flaws in cylindrical vessels subjected to internal pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Killian, D.E.; Yoon, K.K.

1996-12-01

Flaws on the inside surface of cladded reactor vessels are often analyzed by modelling the carbon steel base metal without consideration of a layer of stainless steel cladding material, thus ignoring the effects of this bimetallic discontinuity. Adding cladding material to the inside surface of a finite element model of a vessel raises concerns regarding adequate mesh refinement in the vicinity of the base metal/cladding interface. This paper presents results of three-dimensional linear stress analysis that has been performed to obtain stress intensity factors for clad and unclad reactor vessels subjected to internal pressure loading. The study concentrates on semi-ellipticalmore » longitudinal surface flaws with a 6 to 1 length-to-depth ratio and flaw depths of 1/8 and 1/4 of the base metal thickness. Various meshing schemes are evaluated for modelling the crack front profile, with particular emphasis on the region near the inside surface and at the base metal/cladding interface. The shape of the crack front profile through the cladding layer and the number of finite elements used to discretize the cladding thickness are found to have a significant influence on typical fracture mechanic measures of the crack tip stress fields. Results suggest that the stress intensity factor at the inner surface of a cladded vessel may be affected as much by the finite element mesh near the surface as by the material discontinuity between the two parts of the structure.« less

Deoxyribonucleic acid (DNA) cladding layers for nonlinear-optic-polymer-based electro-optic devices

NASA Astrophysics Data System (ADS)

Grote, James G.; Ogata, Naoya; Diggs, Darnell E.; Hopkins, Frank K.

2003-07-01

Nonlinear optic (NLO) polymer based electro-optic devices have been achieving world record low half wave voltages and high frequencies over the last 2-3 years. Part of the advancement is through the use of relatively more conductive polymers for the cladding layers. Based on the current materials available for these cladding materials, however, the desired optical and electromagnetic properites are being balanced for materials processability. One does not want the solvent present in one layer to dissovle the one deposited underneath, or be dissolved by the one being deposited on top. Optimized polymer cladding materials, to further enhance device performance, are continuing to be investigated. Thin films of deoxyribonucleic acid (DNA), derived from salmon sperm, show promise in providing both the desired optical and magnetic properties, as well as the desired resistance to various solvents used for NLO polymer device fabrication. Thin films of DNA were deposited on glass and silicon substrates and the film quality, optical and electromagnetic properties and resistance to various solvents were characterized.

Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice

NASA Astrophysics Data System (ADS)

Wang, Xiao; Wang, Wei; Wang, Jingli; Wu, Hao; Liu, Chang

2017-03-01

P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)5/(GaN)1 superlattice (SL) in Al0.83Ga0.17N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as MgGa δ doped AlGaN SLs. Mg acceptor activation energy was significantly reduced from 0.378 to 0.331 eV by using MgGa δ doping in SLs instead of traditional doping in alloys. This new process was confirmed to be able to realize high p-type doping in high Al-content AlGaN.

Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice.

PubMed

Wang, Xiao; Wang, Wei; Wang, Jingli; Wu, Hao; Liu, Chang

2017-03-14

P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN) 5 /(GaN) 1 superlattice (SL) in Al 0.83 Ga 0.17 N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as Mg Ga δ doped AlGaN SLs. Mg acceptor activation energy was significantly reduced from 0.378 to 0.331 eV by using Mg Ga δ doping in SLs instead of traditional doping in alloys. This new process was confirmed to be able to realize high p-type doping in high Al-content AlGaN.

Roll Casting of Aluminum Alloy Clad Strip

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nakamura, R.; Tsuge, H.; Haga, T.

2011-01-17

Casting of aluminum alloy three layers of clad strip was tried using the two sets of twin roll casters, and effects of the casting parameters on the cladding conditions were investigated. One twin roll caster was mounted on the other twin roll caster. Base strip was 8079 aluminum alloy and overlay strips were 6022 aluminum alloy. Effects of roll-load of upper and lower casters and melt temperature of the lower caster were investigated. When the roll-load of the upper and lower caster was large enough, the overlay strip could be solidified and be connected. The overlay strip could be connectedmore » when the melt of the overlay strip cast by the lower caster was low enough. Sound three layers of clad strip could be cast by proper conditions.« less

Surface modification of AISI H13 tool steel by laser cladding with NiTi powder

NASA Astrophysics Data System (ADS)

Norhafzan, B.; Aqida, S. N.; Chikarakara, E.; Brabazon, D.

2016-04-01

This paper presents laser cladding of NiTi powder on AISI H13 tool steel surface for surface properties enhancement. The cladding process was conducted using Rofin DC-015 diffusion-cooled CO2 laser system with wavelength of 10.6 µm. NiTi powder was pre-placed on H13 tool steel surface. The laser beam was focused with a spot size of 90 µm on the sample surface. Laser parameters were set to 1515 and 1138 W peak power, 18 and 24 % duty cycle and 2300-3500 Hz laser pulse repetition frequency. Hardness properties of the modified layer were characterized by Wilson Hardness tester. Metallographic study and chemical composition were conducted using field emission scanning electron microscope and energy-dispersive X-ray spectrometer (EDXS) analysis. Results showed that hardness of NiTi clad layer increased three times that of the substrate material. The EDXS analysis detected NiTi phase presence in the modified layer up to 9.8 wt%. The metallographic study shows high metallurgical bonding between substrate and modified layer. These findings are significant to both increased hardness and erosion resistance of high-wear-resistant components and elongating their lifetime.

Mg-hydrogen interaction in AlGaN alloys

NASA Astrophysics Data System (ADS)

Zvanut, M. E.; Sunay, Ustun R.; Dashdorj, J.; Willoughby, W. R.; Allerman, A. A.

2012-03-01

It is well known that hydrogen passivation of Mg in Mg-doped GaN reduces free hole concentrations. While there are numerous studies of passivation of Mg in GaN, little work has been reported concerning passivation rates in AlGaN alloys. We investigated the hydrogen interaction with Mg in nitrides by measuring the intensity of the electron paramagnetic resonance (EPR) signal associated with the acceptor. The samples were isothermally annealed in sequential steps ranging from 5 min - 6.6 h between 300 and 700 oC in H2:N2 (7%: 92%) or pure N2. The signal intensity decreased during the H2N2 anneal and was revived by the N2 anneal as expected; however, the rate at which the intensity changed was shown to depend on Al concentration. In addition, while all signals were quenched at 700 oC in H2:N2, a 750 oC N2 anneal reactivated only about 30% of the Mg in the alloys and 80% of the intensity in the GaN film. These data suggest that the rate of passivation and activation of Mg by hydrogen is dependent on the concentration of Al in the AlxGa-1xN layer. The EPR annealing data could prove to be beneficial in improving p-type optimization in AlGaN alloys.

Surface protection of light metals by one-step laser cladding with oxide ceramics

NASA Astrophysics Data System (ADS)

Nowotny, S.; Richter, A.; Tangermann, K.

1999-06-01

Today, intricate problems of surface treatment can be solved through precision cladding using advanced laser technology. Metallic and carbide coatings have been produced with high-power lasers for years, and current investigations show that laser cladding is also a promising technique for the production of dense and precisely localized ceramic layers. In the present work, powders based on Al2O3 and ZrO2 were used to clad aluminum and titanium light alloys. The compact layers are up to 1 mm thick and show a nonporous cast structure as well as a homogeneous network of vertical cracks. The high adhesive strength is due to several chemical and mechanical bonding mechanisms and can exceed that of plasmasprayed coatings. Compared to thermal spray techniques, the material deposition is strictly focused onto small functional areas of the workpiece. Thus, being a precision technique, laser cladding is not recommended for large-area coatings. Examples of applications are turbine components and filigree parts of pump casings.

Effect of Heating Time on Hardness Properties of Laser Clad Gray Cast Iron Surface

NASA Astrophysics Data System (ADS)

Norhafzan, B.; Aqida, S. N.; Mifthal, F.; Zulhishamuddin, A. R.; Ismail, I.

2018-03-01

This paper presents effect of heating time on cladded gray cast iron. In this study, the effect of heating time on cladded gray cast iron and melted gray cast iron were analysed. The gray cast iron sample were added with mixed Mo-Cr powder using laser cladding technique. The mixed Mo and Cr powder was pre-placed on gray cast iron surface. Modified layer were sectioned using diamond blade cutter and polish using SiC abrasive paper before heated. Sample was heated in furnace for 15, 30 and 45 minutes at 650 °C and cool down in room temperature. Metallographic study was conduct using inverted microscope while surface hardness properties were tested using Wilson hardness test with Vickers scale. Results for metallographic study showed graphite flakes within matrix of pearlite. The surface hardness for modified layer decreased when increased heating time process. These findings are significant to structure stability of laser cladded gray cast iron with different heating times.

Pulse Phase Dynamic Thermal Tomography Investigation on the Defects of the Solid-Propellant Missile Engine Cladding Layer

NASA Astrophysics Data System (ADS)

Peng, Wei; Wang, Fei; Liu, Jun-yan; Xiao, Peng; Wang, Yang; Dai, Jing-min

2018-04-01

Pulse phase dynamic thermal tomography (PP-DTT) was introduced as a nondestructive inspection technique to detect the defects of the solid-propellant missile engine cladding layer. One-dimensional thermal wave mathematical model stimulated by pulse signal was developed and employed to investigate the thermal wave transmission characteristics. The pulse phase algorithm was used to extract the thermal wave characteristic of thermal radiation. Depth calibration curve was obtained by fuzzy c-means algorithm. Moreover, PP-DTT, a depth-resolved photothermal imaging modality, was employed to enable three-dimensional (3D) visualization of cladding layer defects. The comparison experiment between PP-DTT and classical dynamic thermal tomography was investigated. The results showed that PP-DTT can reconstruct the 3D topography of defects in a high quality.

Semiconductor laser devices having lateral refractive index tailoring

DOEpatents

Ashby, Carol I. H.; Hadley, G. Ronald; Hohimer, John P.; Owyoung, Adelbert

1990-01-01

A broad-area semiconductor laser diode includes an active lasing region interposed between an upper and a lower cladding layer, the laser diode further comprising structure for controllably varying a lateral refractive index profile of the diode to substantially compensate for an effect of junction heating during operation. In embodiments disclosed the controlling structure comprises resistive heating strips or non-radiative linear junctions disposed parallel to the active region. Another embodiment discloses a multi-layered upper cladding region selectively disordered by implanted or diffused dopant impurities. Still another embodiment discloses an upper cladding layer of variable thickness that is convex in shape and symmetrically disposed about a central axis of the active region. The teaching of the invention is also shown to be applicable to arrays of semiconductor laser diodes.

Laser cladding assisted by friction stir processing for preparation of deformed crack-free Ni-Cr-Fe coating with nanostructure

NASA Astrophysics Data System (ADS)

Xie, Siyao; Li, Ruidi; Yuan, Tiechui; Chen, Chao; Zhou, Kechao; Song, Bo; Shi, Yusheng

2018-02-01

Although laser cladding has find its widespread application in surface hardening, this technology has been significantly limited by the solidification crack, which usually initiates along grain boundary due to the brittle precipitation in grain boundary and networks formation during the laser rapid melting/solidification process. This paper proposed a novel laser cladding technology assisted by friction stir processing (FSP) to eliminate the usual metallurgical defects by the thermomechanical coupling effect of FSP with the Ni-Cr-Fe as representative coating material. By the FSP assisted laser cladding, the crack in laser cladding Ni-Cr-Fe coating was eliminated and the coarse networks of laser cladding coating was transformed into dispersed nanoparticles. Moreover, the plastic layers with thicknesses 47-140 μm can be observed, with gradient grain refinement from substrate to the top surface in which grain size reached 300 nm and laser photocoagulation net second phase crushed in the layer. In addition, cracks closed in the plastic zone. The refinement of grain resulted the hardness increased to over 400 HV, much higher than the 300 HV of the laser cladding structure. After FSP, the friction coefficient decreased from 0.6167 to 0.5645 which promoted the wear resistance.

Innovative coating of nanostructured vanadium carbide on the F/M cladding tube inner surface for mitigating the fuel cladding chemical interactions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Yong; Phillpot, Simon

Fuel cladding chemical interactions (FCCI) have been acknowledged as a critical issue in a metallic fuel/steel cladding system due to the formation of low melting intermetallic eutectic compounds between the fuel and cladding steel, resulting in reduction in cladding wall thickness as well as a formation of eutectic compounds that can initiate melting in the fuel at lower temperature. In order to mitigate FCCI, diffusion barrier coatings on the cladding inner surface have been considered. In order to generate the required coating techniques, pack cementation, electroplating, and electrophoretic deposition have been investigated. However, these methods require a high processing temperaturemore » of above 700 oC, resulting in decarburization and decomposition of the martensites in a ferritic/martensitic (F/M) cladding steel. Alternatively, organometallic chemical vapor deposition (OMCVD) can be a promising process due to its low processing temperature of below 600 oC. The aim of the project is to conduct applied and fundamental research towards the development of diffusion barrier coatings on the inner surface of F/M fuel cladding tubes. Advanced cladding steels such as T91, HT9 and NF616 have been developed and extensively studied as advanced cladding materials due to their excellent irradiation and corrosion resistance. However, the FCCI accelerated by the elevated temperature and high neutron exposure anticipated in fast reactors, can have severe detrimental effects on the cladding steels through the diffusion of Fe into fuel and lanthanides towards into the claddings. To test the functionality of developed coating layer, the diffusion couple experiments were focused on using T91 as cladding and Ce as a surrogate lanthanum fission product. By using the customized OMCVD coating equipment, thin and compact layers with a few micron between 1.5 µm and 8 µm thick and average grain size of 200 nm and 5 µm were successfully obtained at the specimen coated between 300oC and 500 oC, respectively. The coating layer contains both carbon and vanadium elements as quantified by WED, and the phases mainly consist of a mixture of V2C and VC, which was confirmed using X-ray diffraction patterns. In addition, the ratio between V and C varies with processing temperature, and it was observed that a higher temperature promotes the carbon adsorption and increases thickness of the coating. With optimized deposition conditions, we can apply the coating technique toward the actual T91 cladding materials, and provide the possibilities for the real application in sodium-cooled fast reactors (SFRs). Diffusion couple experiments were performed at both 550 oC and 690 oC, which corresponds to normal and aggressive operating temperatures, respectively. The results show that vanadium carbide coating with wider thickness (8 µm) and lower carbon concentration (27 at.%) reduced the width of the inter diffusion region, indicating that vanadium carbide coating can mitigate FCCI effectively. In specific, inter-diffusion between Fe and Ce was prohibited over most area, but Ce diffusion occurred toward the coating and the Fe substrate through thinner coating layer, which needs further optimization in terms of uniform coating thickness. Overall, it is concluded that this coating process can be successfully applied onto the inner surface of HT9 cladding tubes and the FCCI can be effectively mitigated if not totally eliminated.« less

Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice

PubMed Central

Wang, Xiao; Wang, Wei; Wang, Jingli; Wu, Hao; Liu, Chang

2017-01-01

P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)5/(GaN)1 superlattice (SL) in Al0.83Ga0.17N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as MgGa δ doped AlGaN SLs. Mg acceptor activation energy was significantly reduced from 0.378 to 0.331 eV by using MgGa δ doping in SLs instead of traditional doping in alloys. This new process was confirmed to be able to realize high p-type doping in high Al-content AlGaN. PMID:28290480

An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission

PubMed Central

Lee, Jong Won; Kim, Dong Yeong; Park, Jun Hyuk; Schubert, E. Fred; Kim, Jungsub; Lee, Jinsub; Kim, Yong-Il; Park, Youngsoo; Kim, Jong Kyu

2016-01-01

While there is an urgent need for semiconductor-based efficient deep ultraviolet (DUV) sources, the efficiency of AlGaN DUV light-emitting diodes (LEDs) remains very low because the extraction of DUV photons is significantly limited by intrinsic material properties of AlGaN. Here, we present an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes for maximizing the power conversion efficiency. PMID:26935402

An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission

NASA Astrophysics Data System (ADS)

Lee, Jong Won; Kim, Dong Yeong; Park, Jun Hyuk; Schubert, E. Fred; Kim, Jungsub; Lee, Jinsub; Kim, Yong-Il; Park, Youngsoo; Kim, Jong Kyu

2016-03-01

While there is an urgent need for semiconductor-based efficient deep ultraviolet (DUV) sources, the efficiency of AlGaN DUV light-emitting diodes (LEDs) remains very low because the extraction of DUV photons is significantly limited by intrinsic material properties of AlGaN. Here, we present an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes for maximizing the power conversion efficiency.

Structural transformations in hull material clad by nitrogen stainless steel using various methods

NASA Astrophysics Data System (ADS)

Sagaradze, V. V.; Kataeva, N. V.; Mushnikova, S. Yu.; Khar'kov, O. A.; Kalinin, G. Yu.; Yampol'skii, V. D.

2014-02-01

Specimens of a 10N3KhDMBF shipbuilding hull steel were clad by a 04Kh20N6G11M2AFB nitrogen austenitic steel using various treatment conditions, which included hot rolling, austenitic facing, and explosive welding followed by hot rolling and heat treatment. Between the base and cladding materials, an intermediate layer with variable concentrations of chromium, manganese, and nickel was found, in which a martensitic structure was formed. In all the cases, the strength of bonding of the cladding layer to the hull steel (determined in tests for shear to fracture) was fairly high (σsh = 437-520 MPa). The only exception was the specimen produced by unidirectional facing without subsequent hot rolling (σsh = 308 MPa), in which nonfusions between the faced beads of stainless steel were detected.

Clad metals by roll bonding for SOFC interconnects

NASA Astrophysics Data System (ADS)

Chen, L.; Jha, B.; Yang, Zhenguo; Xia, Guang-Guang; Stevenson, Jeffry W.; Singh, Prabhakar

2006-08-01

High-temperature oxidation-resistant alloys are currently considered as a candidate material for construction of interconnects in intermediate-temperature solid oxide fuel cells. Among these alloys, however, different groups of alloys demonstrate different advantages and disadvantages, and few, if any, can completely satisfy the stringent requirements for the application. To integrate the advantages and avoid the disadvantages of different groups of alloys, cladding has been proposed as one approach in fabricating metallic layered interconnect structures. To examine the feasibility of this approach, the austenitic Ni-base alloy Haynes 230 and the ferritic stainless steel AL 453 were selected as examples and manufactured into a clad metal. Its suitability as an interconnect construction material was investigated. This paper provides a brief overview of the cladding approach and discusses the viability of this technology to fabricate the metallic layered-structure interconnects.

High temperature gradient cobalt based clad developed using microwave hybrid heating

NASA Astrophysics Data System (ADS)

Prasad, C. Durga; Joladarashi, Sharnappa; Ramesh, M. R.; Sarkar, Anunoy

2018-04-01

The development of cobalt based cladding on a titanium substrate using microwave cladding technique is benchmark in coating area. The developed cladding would serve the function of a corrosion resistant coating under high temperatures. Clads of thickness 500 µm have been developed by microwave hybrid heating. A microwave furnace of 2.45GHz frequency was used at a 900W power level for processing. Impact of processing time on melting and adhesion of clad has been discussed. The study also extended to static thermal analysis of simple parts with cladding using commercial Finite Element analysis (FEA) software. A comparative study is explored between four variants of the clad being developed. The analysis has been conducted using a square sample. Similar temperature gradient is also shown for a proposed multi-layer coating, which includes a thermal barrier coating yttria stabilized zirconia (YSZ) on top of the corrosion resistant clad. The YSZ coating would protect the corrosion resistant cladding and substrate from high temperatures.

Nitride based quantum well light-emitting devices having improved current injection efficiency

DOEpatents

Tansu, Nelson; Zhao, Hongping; Liu, Guangyu; Arif, Ronald

2014-12-09

A III-nitride based device provides improved current injection efficiency by reducing thermionic carrier escape at high current density. The device includes a quantum well active layer and a pair of multi-layer barrier layers arranged symmetrically about the active layer. Each multi-layer barrier layer includes an inner layer abutting the active layer; and an outer layer abutting the inner layer. The inner barrier layer has a bandgap greater than that of the outer barrier layer. Both the inner and the outer barrier layer have bandgaps greater than that of the active layer. InGaN may be employed in the active layer, AlInN, AlInGaN or AlGaN may be employed in the inner barrier layer, and GaN may be employed in the outer barrier layer. Preferably, the inner layer is thin relative to the other layers. In one embodiment the inner barrier and active layers are 15 .ANG. and 24 .ANG. thick, respectively.

Investigation of cladding and coating stripping methods for specialty optical fibers

NASA Astrophysics Data System (ADS)

Lee, Jung-Ryul; Dhital, Dipesh; Yoon, Dong-Jin

2011-03-01

Fiber optic sensing technology is used extensively in several engineering fields, including smart structures, health and usage monitoring, non-destructive testing, minimum invasive sensing, safety monitoring, and other advanced measurement fields. A general optical fiber consists of a core, cladding, and coating layers. Many sensing principles require that the cladding or coating layer should be removed or modified. In addition, since different sensing systems are needed for different types of optical fibers, it is very important to find and sort out the suitable cladding or coating removal method for a particular fiber. This study focuses on finding the cladding and coating stripping methods for four recent specialty optical fibers, namely: hard polymer-clad fiber, graded-index plastic optical fiber, copper/carbon-coated optical fiber, and aluminum-coated optical fiber. Several methods, including novel laser stripping and conventional chemical and mechanical stripping, were tried to determine the most suitable and efficient technique. Microscopic investigation of the fiber surfaces was used to visually evaluate the mechanical reliability. Optical time domain reflectometric signals of the successful removal cases were investigated to further examine the optical reliability. Based on our results, we describe and summarize the successful and unsuccessful methods.

Microstructure and corrosion resistance of TC2 Ti alloy by laser cladding with Ti/TiC/TiB2 powders

NASA Astrophysics Data System (ADS)

Diao, Yunhua; Zhang, Kemin

2015-10-01

In the present work, a TiC/TiB2 composite coating was produced onto a TC2 Ti alloy by laser cladding with Ti/TiC/TiB2 powders. The surface microstructure, phase components and compositions were characterized with methods of optical microscopy (OM), scanning electron microscopy (SEM), X-ray diffractometry (XRD), and energy dispersive spectrometry (EDS). The cladding layer is consisted of Ti, TiC and TiB2. And the surface microhardness was measured. After laser cladding, a maximum hardness of 1100 HV is achieved in the laser cladding surface layer, which is more three times higher than that of the TC2 substrate (∼300 HV). Due to the formation of TiC and TiB2 intermetallic compounds in the alloyed region and grain refinement, the microhardness of coating is higher than TC2 Ti alloy. In this paper, the corrosion property of matrix material and treated samples were both measured in NaCl (3.5 wt%) aqueous solution. From the result we can see that the laser cladding specimens' corrosion property is clearly becoming better than that of the substrate.

Novel strip-cast Mg/Al clad sheets with excellent tensile and interfacial bonding properties

PubMed Central

Kim, Jung-Su; Lee, Dong Ho; Jung, Seung-Pill; Lee, Kwang Seok; Kim, Ki Jong; Kim, Hyoung Seop; Lee, Byeong-Joo; Chang, Young Won; Yuh, Junhan; Lee, Sunghak

2016-01-01

In order to broaden industrial applications of Mg alloys, as lightest-weight metal alloys in practical uses, many efforts have been dedicated to manufacture various clad sheets which can complement inherent shortcomings of Mg alloys. Here, we present a new fabrication method of Mg/Al clad sheets by bonding thin Al alloy sheet on to Mg alloy melt during strip casting. In the as-strip-cast Mg/Al clad sheet, homogeneously distributed equi-axed dendrites existed in the Mg alloy side, and two types of thin reaction layers, i.e., γ (Mg17Al12) and β (Mg2Al3) phases, were formed along the Mg/Al interface. After post-treatments (homogenization, warm rolling, and annealing), the interfacial layers were deformed in a sawtooth shape by forming deformation bands in the Mg alloy and interfacial layers, which favorably led to dramatic improvement in tensile and interfacial bonding properties. This work presents new applications to multi-functional lightweight alloy sheets requiring excellent formability, surface quality, and corrosion resistance as well as tensile and interfacial bonding properties. PMID:27245687

Vanadium diffusion coating on HT-9 cladding for mitigating the fuel cladding chemical interactions

NASA Astrophysics Data System (ADS)

Lo, Wei-Yang; Yang, Yong

2014-08-01

Fuel cladding chemical interaction (FCCI) has been identified as one of the crucial issues for developing Ferritic/Martensitic (F/M) stainless steel claddings for metallic fuels in a fast reactor. The anticipated elevated temperature and high neutron flux can significantly aggravate the FCCI, in terms of formation of inter-diffusion and lower melting point eutectic phases. To mitigate the FCCI, vanadium carbide coating as a diffusion barrier was deposited on the HT-9 substrate using a pack cementation diffusion coating (PCDC) method, and the processing temperature was optimized down to 730 °C. A solid metallurgical bonding between the coating layer and substrate was achieved, and the coating is free from through depth cracks. The microstructural characterizations using SEM and TEM show a nanostructured grain structure. EDS/WDS and XRD analysis confirm the phase of coating layer as V2C. Diffusion couple tests at 660 °C for 100 h demonstrate that V2C layer with a thickness of less than 5 μm can effectively eliminate the inter-diffusion between the lanthanide cerium and HT-9 steel.

Novel strip-cast Mg/Al clad sheets with excellent tensile and interfacial bonding properties.

PubMed

Kim, Jung-Su; Lee, Dong Ho; Jung, Seung-Pill; Lee, Kwang Seok; Kim, Ki Jong; Kim, Hyoung Seop; Lee, Byeong-Joo; Chang, Young Won; Yuh, Junhan; Lee, Sunghak

2016-06-01

In order to broaden industrial applications of Mg alloys, as lightest-weight metal alloys in practical uses, many efforts have been dedicated to manufacture various clad sheets which can complement inherent shortcomings of Mg alloys. Here, we present a new fabrication method of Mg/Al clad sheets by bonding thin Al alloy sheet on to Mg alloy melt during strip casting. In the as-strip-cast Mg/Al clad sheet, homogeneously distributed equi-axed dendrites existed in the Mg alloy side, and two types of thin reaction layers, i.e., γ (Mg17Al12) and β (Mg2Al3) phases, were formed along the Mg/Al interface. After post-treatments (homogenization, warm rolling, and annealing), the interfacial layers were deformed in a sawtooth shape by forming deformation bands in the Mg alloy and interfacial layers, which favorably led to dramatic improvement in tensile and interfacial bonding properties. This work presents new applications to multi-functional lightweight alloy sheets requiring excellent formability, surface quality, and corrosion resistance as well as tensile and interfacial bonding properties.

Influence of the field humiture environment on the mechanical properties of 316L stainless steel repaired with Fe314

NASA Astrophysics Data System (ADS)

Zhang, Lianzhong; Li, Dichen; Yan, Shenping; Xie, Ruidong; Qu, Hongliang

2018-04-01

The mechanical properties of 316L stainless steel repaired with Fe314 under different temperatures and humidities without inert gas protection were studied. Results indicated favorable compatibility between Fe314 and 316L stainless steel. The average yield strength, tensile strength, and sectional contraction percentage were higher in repaired samples than in 316L stainless steel, whereas the elongation rate was slightly lower. The different conditions of humiture environment on the repair sample exerted minimal influence on tensile and yield strengths. The Fe314 cladding layer was mainly composed of equiaxed grains and mixed with randomly oriented columnar crystal and tiny pores or impurities in the tissue. Results indicated that the hardness value of Fe314 cladding layer under different humiture environments ranged within 419-451.1 HV0.2. The field humiture environment also showed minimal impact on the average hardness of Fe314 cladding layers. Furthermore, 316L stainless steel can be repaired through laser cladding by using Fe314 powder without inert gas protection under different temperatures and humidity environments.

Nanocrystalline diamond protects Zr cladding surface against oxygen and hydrogen uptake: Nuclear fuel durability enhancement.

PubMed

Škarohlíd, Jan; Ashcheulov, Petr; Škoda, Radek; Taylor, Andrew; Čtvrtlík, Radim; Tomáštík, Jan; Fendrych, František; Kopeček, Jaromír; Cháb, Vladimír; Cichoň, Stanislav; Sajdl, Petr; Macák, Jan; Xu, Peng; Partezana, Jonna M; Lorinčík, Jan; Prehradná, Jana; Steinbrück, Martin; Kratochvílová, Irena

2017-07-25

In this work, we demonstrate and describe an effective method of protecting zirconium fuel cladding against oxygen and hydrogen uptake at both accident and working temperatures in water-cooled nuclear reactor environments. Zr alloy samples were coated with nanocrystalline diamond (NCD) layers of different thicknesses, grown in a microwave plasma chemical vapor deposition apparatus. In addition to showing that such an NCD layer prevents the Zr alloy from directly interacting with water, we show that carbon released from the NCD film enters the underlying Zr material and changes its properties, such that uptake of oxygen and hydrogen is significantly decreased. After 100-170 days of exposure to hot water at 360 °C, the oxidation of the NCD-coated Zr plates was typically decreased by 40%. Protective NCD layers may prolong the lifetime of nuclear cladding and consequently enhance nuclear fuel burnup. NCD may also serve as a passive element for nuclear safety. NCD-coated ZIRLO claddings have been selected as a candidate for Accident Tolerant Fuel in commercially operated reactors in 2020.

Effects of different binders on microstructure and phase composition of hydroxyapatite Nd-YAG laser clad coatings

NASA Astrophysics Data System (ADS)

Chien, C. S.; Hong, T. F.; Han, T. J.; Kuo, T. Y.; Liao, T. Y.

2011-01-01

The laser clad coating technique can help to produce metallurgical bonding with high bonding strength between the coating layer and the substrate, which has been gradually applied for hydroxyapatite (HA) coating on metallic substrates. In this study, HA powder is mixed with two different binders, namely water glass (WG) and polyvinyl alcohol (PVA), respectively, and is then clad on Ti-6Al-4V substrates using an Nd:YAG laser system under various processing conditions. The microstructure, chemical composition and hardness of the coating layer and transition layer of the various samples are then systematically explored. The experimental results show that the coating layers of the various samples all contain both cellular dendrites and rod-like piled structures, while the transition layers contain only cellular dendrites. For all samples, the coating layer consists mostly of CaTiO 3, Ca 2P 2O 7, CaO and HA phases, whereas the transition layer contains primarily CaTiO 3, Ca 2P 2O 7, Ti 3P, Ti and HA phases. In addition, the transition layer of the WG samples also contains SiO 2 and Si 2Ti phases. In all of the specimens, the transition layer has a higher average hardness than the substrate or coating layer. Moreover, the transition layer in the WG sample is harder than that in the PVA sample.

New GaN based HEMT with Si3N4 or un-doped region in the barrier for high power applications

NASA Astrophysics Data System (ADS)

Razavi, S. M.; Tahmasb Pour, S.; Najari, P.

2018-06-01

New AlGaN/GaN high electron mobility transistors (HEMTs) that their barrier layers under the gate are divided into two regions horizontally are presented in this work. Upper region is Si3N4 (SI-HEMT) or un-doped AlGaN (UN-HEMT) and lower region is AlGaN with heavier doping compared to barrier layer. Upper region in SI-HEMT and UN-HEMT reduces peak electric field in the channel and then improves breakdown voltage considerably. Lower region increases electron density in the two dimensional electron gas (2-DEG) and enhances drain current significantly. For instance, saturated drain current in SI-HEMT is about 100% larger than that in the conventional one. Moreover, the maximum breakdown voltage in the proposed structures is 65 V. This value is about 30% larger than that in the conventional transistor (50 V). Also, suggested structure reduces short channel effect such as DIBL. The maximum gm is obtained in UN-HEMT and conventional devices. Proposed structures improve breakdown voltage and saturated drain current and then enhance maximum output power density. Maximum output power density in the new structures is about 150% higher than that in the conventional.

Effects of structural modification on reliability of nanoscale nitride HEMTs

NASA Astrophysics Data System (ADS)

Gaddipati, Vamsi Mohan

AlGaN based nanoscale high-electron-mobility transistors (HEMTs) are the next generation of transistor technology that features the unique combination of higher power, wider bandwidth, low noise, higher efficiency, and temperature/radiation hardness than conventional AlGaAs and Si based technologies. However, as evidenced by recent stress tests, reliability of these devices (characterized by a gradual decrease in the output current/power leading to failure of the device in just tens of hours of operation) remains a major concern. Although, in these tests, physical damages were clearly visible in the device, the root cause and nature of these damages have not yet been fully assessed experimentally. Therefore, a comprehensive theoretical study of the physical mechanisms responsible for degradation of AlGaN HEMTs is essential before these devices are deployed in targeted applications. The main objective of the proposed research is to computationally investigate how degradation of state-of-the-art nanoscale AlGaN HEMTs is governed by an intricate and dynamical coupling of thermo-electromechanical processes at different length (atoms-to-transistor) and time (femtosecondto- hours) scales while operating in high voltage, large mechanical, and high temperature/radiation stresses. This work centers around a novel hypotheses as follows: High voltage applied to AlGaN HEMT causes excessive internal heat dissipation, which triggers gate metal diffusion into the semiconducting barrier layer and structural modifications (defect ii formation) leading to diminished polarization induced charge density and output current. Since the dynamical system to be studied is complex, chaotic (where the evolution rule is guided by atomicity of the underlying material), and involve coupled physical processes, an in-house multiscale simulator (QuADS 3-D) has been employed and augmented, where material parameters are obtained atomistically using firstprinciples, structural relaxation and defect formations will be modeled by integrating molecular dynamics, and the influence of atomistic processes on charge and phonon transport and current degradation will be simulated using a coupled drift-diffusionthermodynamic framework.

Botulinum toxin detection using AlGaN /GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Wang, Yu-Lin; Chu, B. H.; Chen, K. H.; Chang, C. Y.; Lele, T. P.; Tseng, Y.; Pearton, S. J.; Ramage, J.; Hooten, D.; Dabiran, A.; Chow, P. P.; Ren, F.

2008-12-01

Antibody-functionalized, Au-gated AlGaN /GaN high electron mobility transistors (HEMTs) were used to detect botulinum toxin. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaN /GaN HEMT drain-source current showed a rapid response of less than 5s when the target toxin in a buffer was added to the antibody-immobilized surface. We could detect a range of concentrations from 1to10ng/ml. These results clearly demonstrate the promise of field-deployable electronic biological sensors based on AlGaN /GaN HEMTs for botulinum toxin detection.

Effect of Microstructure on Diffusional Solidification of 4343/3005/4343 Multi-Layer Aluminum Brazing Sheet

NASA Astrophysics Data System (ADS)

Tu, Yiyou; Tong, Zhen; Jiang, Jianqing

2013-04-01

The effect of microstructure on clad/core interactions during the brazing of 4343/3005/4343 multi-layer aluminum brazing sheet was investigated employing differential scanning calorimetry (DSC) and electron back-scattering diffraction (EBSD). The thickness of the melted clad layer gradually decreased during the brazing operation. It could be completely removed isothermally as a result of diffusional solidification at the brazing temperature. During the brazing cycle, the rate of loss of the melt in the brazing sheet, with small equiaxed grains' core layer, was higher than that with the core layer consisting of elongated large grains. The difference in microstructure affected the amount of liquid formed during brazing.

Hybrid AlGaN-SiC Avalanche Photodiode for Deep-UV Photon Detection

NASA Technical Reports Server (NTRS)

Aslam, Shahid; Herrero, Federico A.; Sigwarth, John; Goldsman, Neil; Akturk, Akin

2010-01-01

The proposed device is capable of counting ultraviolet (UV) photons, is compatible for inclusion into space instruments, and has applications as deep- UV detectors for calibration systems, curing systems, and crack detection. The device is based on a Separate Absorption and Charge Multiplication (SACM) structure. It is based on aluminum gallium nitride (AlGaN) absorber on a silicon carbide APD (avalanche photodiode). The AlGaN layer absorbs incident UV photons and injects photogenerated carriers into an underlying SiC APD that is operated in Geiger mode and provides current multiplication via avalanche breakdown. The solid-state detector is capable of sensing 100-to-365-nanometer wavelength radiation at a flux level as low as 6 photons/pixel/s. Advantages include, visible-light blindness, operation in harsh environments (e.g., high temperatures), deep-UV detection response, high gain, and Geiger mode operation at low voltage. Furthermore, the device can also be designed in array formats, e.g., linear arrays or 2D arrays (micropixels inside a superpixel).

3D analysis of thermal and stress evolution during laser cladding of bioactive glass coatings.

PubMed

Krzyzanowski, Michal; Bajda, Szymon; Liu, Yijun; Triantaphyllou, Andrew; Mark Rainforth, W; Glendenning, Malcolm

2016-06-01

Thermal and strain-stress transient fields during laser cladding of bioactive glass coatings on the Ti6Al4V alloy basement were numerically calculated and analysed. Conditions leading to micro-cracking susceptibility of the coating have been investigated using the finite element based modelling supported by experimental results of microscopic investigation of the sample coatings. Consecutive temperature and stress peaks are developed within the cladded material as a result of the laser beam moving along the complex trajectory, which can lead to micro-cracking. The preheated to 500°C base plate allowed for decrease of the laser power and lowering of the cooling speed between the consecutive temperature peaks contributing in such way to achievement of lower cracking susceptibility. The cooling rate during cladding of the second and the third layer was lower than during cladding of the first one, in such way, contributing towards improvement of cracking resistance of the subsequent layers due to progressive accumulation of heat over the process. Copyright © 2016 Elsevier Ltd. All rights reserved.

Propagation of Electromagnetic Waves in Slab Waveguide Structure Consisting of Chiral Nihility Claddings and Negative-Index Material Core Layer

NASA Astrophysics Data System (ADS)

Helal, Alaa N. Abu; Taya, Sofyan A.; Elwasife, Khitam Y.

2018-06-01

The dispersion equation of an asymmetric three-layer slab waveguide, in which all layers are chiral materials is presented. Then, the dispersion equation of a symmetric slab waveguide, in which the claddings are chiral materials and the core layer is negative index material, is derived. Normalized cut-off frequencies, field profile, and energies flow of right-handed and left-handed circularly polarized modes are derived and plotted. We consider both odd and even guided modes. Numerical results of guided low-order modes are provided. Some novel features, such as abnormal dispersion curves, are found.

Arrangement for damping the resonance in a laser diode

NASA Technical Reports Server (NTRS)

Katz, J.; Yariv, A.; Margalit, S. (Inventor)

1985-01-01

An arrangement for damping the resonance in a laser diode is described. This arrangement includes an additional layer which together with the conventional laser diode form a structure (35) of a bipolar transistor. Therein, the additional layer serves as the collector, the cladding layer next to it as the base, and the active region and the other cladding layer as the emitter. A capacitor is connected across the base and the collector. It is chosen so that at any frequency above a certain selected frequency which is far below the resonance frequency the capacitor impedance is very low, effectively shorting the base to the collector.

The role of AlGaN buffers and channel thickness in the electronic transport properties of Al{sub x}In{sub 1–x}N/AlN/GaN heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amirabbasi, M., E-mail: mo.amirabbasi@gmail.com

We try to theoretically analyze the reported experimental data of the Al{sub x}In{sub 1–x}N/AlN/GaN heterostructures grown by MOCVD and quantitatively investigate the effects of AlGaN buffers and the GaNchannel thickness on the electrical transport properties of these systems. Also, we obtain the most important effective parameters of the temperature-dependent mobility in the range 35–300 K. Our results show that inserting a 1.1 μm thick Al{sub 0.04}Ga{sub 0.96}N buffer enhances electron mobility by decreasing the effect of phonons, the interface roughness, and dislocation and crystal defect scattering mechanisms. Also, as the channel thickness increases from 20 nm to 40 nm, themore » electron mobility increases from 2200 to 2540 cm{sup 2}/(V s) and from 870 to 1000 cm{sup 2}/(V s) at 35 and 300 K respectively, which is attributed to the reduction in the dislocation density and the strain-induced field. Finally, the reported experimental data show that inserting a 450 nm graded AlGaN layer before an Al{sub 0.04}Ga{sub 0.96}N buffer causes a decrease in the electron mobility, which is attributed to the enhancement of the lateral size of roughness, the dislocation density, and the strain-induced field in this sample.« less

Efficient III-Nitride MIS-HEMT devices with high-κ gate dielectric for high-power switching boost converter circuits

NASA Astrophysics Data System (ADS)

Mohanbabu, A.; Mohankumar, N.; Godwin Raj, D.; Sarkar, Partha; Saha, Samar K.

2017-03-01

The paper reports the results of a systematic theoretical study on efficient recessed-gate, double-heterostructure, and normally-OFF metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs), HfAlOx/AlGaN on Al2O3 substrate. In device architecture, a thin AlGaN layer is used in the AlGaN graded barrier MIS-HEMTs that offers an excellent enhancement-mode device operation with threshold voltage higher than 5.3 V and drain current above 0.64 A/mm along with high on-current/off-current ratio over 107 and subthreshold slope less than 73 mV/dec. In addition, a high OFF-state breakdown voltage of 1200 V is achieved for a device with a gate-to-drain distance and field-plate length of 15 μm and 5.3 μm, respectively at a drain current of 1 mA/mm with a zero gate bias, and the substrate grounded. The numerical device simulation results show that in comparison to a conventional AlGaN/GaN MIS-HEMT of similar design, a graded barrier MIS-HEMT device exhibits a better interface property, remarkable suppression of leakage current, and a significant improvement of breakdown voltage for HfAlOx gate dielectric. Finally, the benefit of HfAlOx graded-barrier AlGaN MIS-HEMTs based switching devices is evaluated on an ultra-low-loss converter circuit.

Influence of the pulsed plasma treatment on the corrosion resistance of the low-alloy steel plated by Ni-based alloy

NASA Astrophysics Data System (ADS)

Dzhumaev, P.; Yakushin, V.; Kalin, B.; Polsky, V.; Yurlova, M.

2016-04-01

This paper presents investigation results of the influence of high temperature pulsed plasma flows (HTPPF) treatment on the corrosion resistance of low-alloy steel 0.2C-Cr-Mn- Ni-Mo cladded by the rapidly quenched nickel-based alloy. A technique that allows obtaining a defect-free clad layer with a good adhesion to the substrate was developed. It is shown that the preliminary treatment of steel samples by nitrogen plasma flows significantly increases their corrosion resistance in the conditions of intergranular corrosion test in a water solution of sulfuric acid. A change of the corrosion mechanism of the clad layer from intergranular to uniform corrosion was observed as a result of sub-microcrystalline structure formation and homogeneous distribution of alloying elements in the plasma treated surface layer thus leading to the significant increase of the corrosion resistance.

Effects of pretreatment processes for Zr electrorefining of oxidized Zircaloy-4 cladding tubes

NASA Astrophysics Data System (ADS)

Hwa Lee, Chang; Lee, Yoo Lee; Jeon, Min Ku; Choi, Yong Taek; Kang, Kweon Ho; Park, Geun Il

2014-06-01

The effect of pretreatment processes for the Zr electrorefining of oxidized Zircaloy-4 cladding tubes is examined in LiCl-KCl-ZrCl4 molten salts at 500 °C. The cyclic voltammetries reveal that the Zr dissolution kinetics is highly dependent on the thickness of a Zr oxide layer formed at 500 °C under air atmosphere. For the Zircaloy-4 tube covered with a 1 μm thick oxide layer, the Zr dissolution process is initiated from a non-stoichiometric Zr oxide surface through salt treatment at an open circuit potential in the molten salt electrolyte. The Zr dissolution of the samples in the middle range of oxide layer thickness appears to be more effectively derived by the salt treatment coupled with an anodic potential application at an oxidation potential of Zr. A modification of the process scheme offers an applicability of Zr electrorefining for the treatment of oxidized cladding hull wastes.

Elastic strain relaxation in GaInAsP/InP membrane quantum wire structures

NASA Astrophysics Data System (ADS)

Ferdous, Fahmida; Haque, A.

2006-12-01

Strain distribution in GaInAsP/InP compressively strained membrane quantum wires (with low refractive index polymer cladding layers) fabricated by electron-beam lithography, reactive-ion etching and two-step epitaxial growth is theoretically calculated using finite element analysis. Results are compared with those of its conventional counterpart in which InP cladding layers are used. It is found that the etching away of the InP cladding layers in membrane structures causes a redistribution of elastic strain. The normal strain along the growth direction is the most affected component during this redistribution. We have also studied the effects of varying wire width, barrier tensile strain and other parameters on the strain relaxation. The effective bandgap in the presence of strain relaxation is also estimated. Results show that owing to the redistribution of strain, membrane structures exhibit an increase in the effective bandgap.

Laser Powder Cladding of Ti-6Al-4V α/β Alloy

PubMed Central

Al-Sayed Ali, Samar Reda; Hussein, Abdel Hamid Ahmed; Nofal, Adel Abdel Menam Saleh; Elgazzar, Haytham Abdelrafea; Sabour, Hassan Abdel

2017-01-01

Laser cladding process was performed on a commercial Ti-6Al-4V (α + β) titanium alloy by means of tungsten carbide-nickel based alloy powder blend. Nd:YAG laser with a 2.2-KW continuous wave was used with coaxial jet nozzle coupled with a standard powder feeding system. Four-track deposition of a blended powder consisting of 60 wt % tungsten carbide (WC) and 40 wt % NiCrBSi was successfully made on the alloy. The high content of the hard WC particles is intended to enhance the abrasion resistance of the titanium alloy. The goal was to create a uniform distribution of hard WC particles that is crack-free and nonporous to enhance the wear resistance of such alloy. This was achieved by changing the laser cladding parameters to reach the optimum conditions for favorable mechanical properties. The laser cladding samples were subjected to thorough microstructure examinations, microhardness and abrasion tests. Phase identification was obtained by X-ray diffraction (XRD). The obtained results revealed that the best clad layers were achieved at a specific heat input value of 59.5 J·mm−2. An increase by more than three folds in the microhardness values of the clad layers was achieved and the wear resistance was improved by values reaching 400 times. PMID:29036935

Characterizing the magnetic memory signals on the surface of plasma transferred arc cladding coating under fatigue loads

NASA Astrophysics Data System (ADS)

Huang, Haihong; Han, Gang; Qian, Zhengchun; Liu, Zhifeng

2017-12-01

The metal magnetic memory signals were measured during dynamic tension tests on the surfaces of the cladding coatings by plasma transferred arc (PTA) welding and the 0.45% C steel. Results showed that the slope of the normal component Hp(y) of magnetic signal and the average value of the tangential component Hp(x) reflect the magnetization of the specimens. The signals increased sharply in the few initial cycles; and then fluctuated around a constant value during fatigue process until fracture. For the PTA cladding coating, the slope of Hp(y) was steeper and the average of Hp(x) was smaller, compared with the 0.45% C steel. The hysteresis curves of cladding layer, bonding layer and substrate were measured by vibrating sample magnetometer testing, and then saturation magnetization, initial susceptibility and coercivity were further calculated. The stress-magnetization curves were also plotted based on the J-A model, which showed that the PTA cladding coating has smaller remanence and coercivity compared with the 0.45% C steel. The microstructures of cladding coating confirmed that the dendritic structure and second-phase of alloy hinder the magnetic domain motion, which was the main factor influencing the variation of magnetic signal during the fatigue tests.

Laser Powder Cladding of Ti-6Al-4V α/β Alloy.

PubMed

Al-Sayed Ali, Samar Reda; Hussein, Abdel Hamid Ahmed; Nofal, Adel Abdel Menam Saleh; Hasseb Elnaby, Salah Elden Ibrahim; Elgazzar, Haytham Abdelrafea; Sabour, Hassan Abdel

2017-10-15

Laser cladding process was performed on a commercial Ti-6Al-4V (α + β) titanium alloy by means of tungsten carbide-nickel based alloy powder blend. Nd:YAG laser with a 2.2-KW continuous wave was used with coaxial jet nozzle coupled with a standard powder feeding system. Four-track deposition of a blended powder consisting of 60 wt % tungsten carbide (WC) and 40 wt % NiCrBSi was successfully made on the alloy. The high content of the hard WC particles is intended to enhance the abrasion resistance of the titanium alloy. The goal was to create a uniform distribution of hard WC particles that is crack-free and nonporous to enhance the wear resistance of such alloy. This was achieved by changing the laser cladding parameters to reach the optimum conditions for favorable mechanical properties. The laser cladding samples were subjected to thorough microstructure examinations, microhardness and abrasion tests. Phase identification was obtained by X-ray diffraction (XRD). The obtained results revealed that the best clad layers were achieved at a specific heat input value of 59.5 J·mm -2 . An increase by more than three folds in the microhardness values of the clad layers was achieved and the wear resistance was improved by values reaching 400 times.

Examination of UC-ZrC after long term irradiation at thermionic temperature

NASA Technical Reports Server (NTRS)

Yang, L.; Johnson, H. O.

1972-01-01

Two fluoride tungsten clad UC-ZrC fueled capsules, designated as V-2C and V-2D, were examined a hot cell after irradiation in NASA Plum Brook Reactor at a maximum cladding temperature of 1930 K for 11,089 and 12,031 hours to burnups of 3.0 x 10 to the 20th power and 2.1 x 10 to the 20th power fission/c.c. respectively. Percentage of fission gas release from the fuel material was measured by radiochemical means. Cladding deformation, fuel-cladding interaction and microstructures of fuel, cladding, and fuel-cladding interface were studied metallographically. Compositions of dispersions in fuel, fuel matrix and fuel-cladding interaction layer were analyzed by electron microprobe techniques. Axial and radial distributions of burnup were determined by gamma-scan, autoradiography and isotopic burnup analysis. The results are presented and discussed in conjunction with the requirements of thermionic fuel elements for space power application.

Development of Cu Clad Cu-Zr Based Metallic Glass and Its Solderability

NASA Astrophysics Data System (ADS)

Terajima, Takeshi; Kimura, Hisamichi; Inoue, Akihisa

Soldering is a candidate technique for joining metallic glasses. It can be processed far below the crystallization temperatures of the various metallic glasses so that there is no possibility of crystallization. However, wettability of Cu-Zr based metallic glass by Pb free solder is poor because a strong surface oxide film interferes direct contact between them. To overcome the problem, Cu thin film clad metallic glass was developed. It was preliminary produced by casting a melt of Cu36Zr48Al8Ag8 pre-alloy into Cu mold cavity, inside which Cu thin film with 2 mm in thickness was set on the wall. Cu36Zr48Al8Ag8 metallic glass, whose surface Cu thin film was welded to, was successfully produced. From the microstructure analyses, it was found that reaction layer was formed at the interface between Cu and Cu36Zr48Al8Ag8 metallic glass, however, there was no oxide in the Cu clad layer. Solderability to the metallic glass was drastically increased. The Cu clad layer played an important role to prevent the formation of surface oxide film and consequently improved the solderability.

Calculation and experimental determination of the geometric parameters of the coatings by laser cladding

NASA Astrophysics Data System (ADS)

Birukov, V. P.; Fichkov, A. A.

2017-12-01

In the present work the experiments on laser cladding of powder Fe-B-Cr-6-2 on samples of steel 20. Metallographic studies of geometric parameters of deposited layers and the depth of the heat affected zone (HAZ). Using is the method of full factorial experiment (FFE) mathematical dependences of the geometrical sizes of the deposited layers of processing modes. Deviation of calculated values from experimental data is not more than 3%.

Microfabricated bragg waveguide

DOEpatents

Fleming, James G.; Lin, Shawn-Yu; Hadley, G. Ronald

2004-10-19

A microfabricated Bragg waveguide of semiconductor-compatible material having a hollow core and a multilayer dielectric cladding can be fabricated by integrated circuit technologies. The microfabricated Bragg waveguide can comprise a hollow channel waveguide or a hollow fiber. The Bragg fiber can be fabricated by coating a sacrificial mandrel or mold with alternating layers of high- and low-refractive-index dielectric materials and then removing the mandrel or mold to leave a hollow tube with a multilayer dielectric cladding. The Bragg channel waveguide can be fabricated by forming a trench embedded in a substrate and coating the inner wall of the trench with a multilayer dielectric cladding. The thicknesses of the alternating layers can be selected to satisfy the condition for minimum radiation loss of the guided wave.

Structure and mechanical properties of coatings fabricated by nonvacuum electron beam cladding of Ti-Ta-Zr powder mixtures

NASA Astrophysics Data System (ADS)

Samoylenko, Vitaliy V.; Lenivtseva, Olga G.; Polyakov, Igor A.; Laptev, Ilya S.

2015-10-01

In this paper structural investigations and mechanical tests of Ti-Ta-Zr coatings obtained on surfaces of cp-titanium workpieces were carried out. It was found that the coatings had a dendrite structure; investigations at high-power magnifications revealed a platelet structure. An increase of tantalum concentration led to refinement of structural components. The microhardness level of all coatings, excepting a specimen with the maximum tantalum content, was 370 HV. The microhardness of this coating reached 400 HV. The ultimate tensile strength of cladded layers varied from 697 to 947 MPa. Adhesion tests showed that bimetallic composites were characterized by high bond strength of cladded layers to the substrate, which exceeded cp-titanium strength characteristics.

Optimization of laser cladding of cold spray coatings with B4C and Ni powders

NASA Astrophysics Data System (ADS)

Fomin, V. M.; Golyshev, A. A.; Malikov, A. G.; Orishich, A. M.; Filippov, A. A.; Ryashin, N. S.

2017-12-01

In the present work, a combined method is considered for the production of a metal-matrix composite coating based on Ni and B4C. The coating is created by consistently applied methods: cold spray and laser cladding. The conditions of obtaining cermet layers are investigated depending on the parameters of laser cladding and cold spray. It is shown that the laser track structure significantly changes in accordance to the size of ceramic particles ranging 3-75 µm and its concentration. It is shown that the most perspective layers for additive manufacturing could be obtain from cold spray coatings with ceramic concentrations more than 50% by weight treated in the heat-conductivity laser mode.

Modeling of Heat Transfer and Fluid Flow in the Laser Multilayered Cladding Process

NASA Astrophysics Data System (ADS)

Kong, Fanrong; Kovacevic, Radovan

2010-12-01

The current work examines the heat-and-mass transfer process in the laser multilayered cladding of H13 tool steel powder by numerical modeling and experimental validation. A multiphase transient model is developed to investigate the evolution of the temperature field and flow velocity of the liquid phase in the molten pool. The solid region of the substrate and solidified clad, the liquid region of the melted clad material, and the gas region of the surrounding air are included. In this model, a level-set method is used to track the free surface motion of the molten pool with the powder material feeding and scanning of the laser beam. An enthalpy-porosity approach is applied to deal with the solidification and melting that occurs in the cladding process. Moreover, the laser heat input and heat losses from the forced convection and heat radiation that occurs on the top surface of the deposited layer are incorporated into the source term of the governing equations. The effects of the laser power, scanning speed, and powder-feed rate on the dilution and height of the multilayered clad are investigated based on the numerical model and experimental measurements. The results show that an increase of the laser power and powder feed rate, or a reduction of the scanning speed, can increase the clad height and directly influence the remelted depth of each layer of deposition. The numerical results have a qualitative agreement with the experimental measurements.

Effect of Annealing on Microstructure and Tensile Properties of 5052/AZ31/5052 Clad Sheets

NASA Astrophysics Data System (ADS)

Nie, Huihui; Liang, Wei; Chi, Chengzhong; Li, Xianrong; Fan, Haiwei; Yang, Fuqian

2016-05-01

Three-layered 5052Al/AZ31Mg/5052Al (5052/AZ31/5052) clad sheets were fabricated by four-pass rolling and annealed under different conditions. Under the optimal annealing condition, homogeneous and equiaxial grains with an average AZ31 grain size of 5.24 µm were obtained and the maximum values of ultimate tensile strength and elongation of the clad sheet reached 230 MPa and 18%, respectively. Electron backscatter diffraction analysis showed that the AZ31 layer had a typical rolling texture with its c-axis parallel to the normal direction. The fraction of low-angle grain boundaries in the 5052 layer was nearly four times more than that in the AZ31 layer because of different deformation extent and recrystallization driving forces. The textures of Al3Mg2 and Mg17Al12 were similar to that of 5052 because of the deformation coordination during the rolling and recrystallization process. The orientation relationship between Mg17Al12 and AZ31 seemed to be (110) Mg17Al12//(10-11) AZ31.

Single-polarization hollow-core square photonic bandgap waveguide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eguchi, Masashi, E-mail: megu@ieee.org; Tsuji, Yasuhide, E-mail: y-tsuji@mmm.muroran-it.ac.jp

Materials with a periodic structure have photonic bandgaps (PBGs), in which light can not be guided within certain wavelength ranges; thus light can be confined within a low-index region by the bandgap effect. In this paper, rectangular-shaped hollow waveguides having waveguide-walls (claddings) using the PBG have been discussed. The design principle for HE modes of hollow-core rectangular PBG waveguides with a Bragg cladding consisting of alternating high- and low-index layers, based on a 1D periodic multilayer approximation for the Bragg cladding, is established and then a novel single-polarization hollow-core square PBG waveguide using the bandgap difference between two polarized wavesmore » is proposed. Our results demonstrated that a single-polarization guiding can be achieved by using the square Bragg cladding structure with different layer thickness ratios in the mutually orthogonal directions and the transmission loss of the guided mode in a designed hollow-core square PBG waveguide is numerically estimated to be 0.04 dB/cm.« less

The effect of particle size on the heat affected zone during laser cladding of Ni-Cr-Si-B alloy on C45 carbon steel

NASA Astrophysics Data System (ADS)

Tanigawa, Daichi; Abe, Nobuyuki; Tsukamoto, Masahiro; Hayashi, Yoshihiko; Yamazaki, Hiroyuki; Tatsumi, Yoshihiro; Yoneyama, Mikio

2018-02-01

Laser cladding is one of the most useful surface coating methods for improving the wear and corrosion resistance of material surfaces. Although the heat input associated with laser cladding is small, a heat affected zone (HAZ) is still generated within the substrate because this is a thermal process. In order to reduce the area of the HAZ, the heat input must therefore be reduced. In the present study, we examined the effects of the powdered raw material particle size on the heat input and the extent of the HAZ during powder bed laser cladding. Ni-Cr-Si-B alloy layers were produced on C45 carbon steel substrates in conjunction with alloy powders having average particle sizes of 30, 40 and 55 μm, while measuring the HAZ area by optical microscopy. The heat input required for layer formation was found to decrease as smaller particles were used, such that the HAZ area was also reduced.

Measurement and removal of cladding light in high power fiber systems

NASA Astrophysics Data System (ADS)

Walbaum, Till; Liem, Andreas; Schreiber, Thomas; Eberhardt, Ramona; Tünnermann, Andreas

2018-02-01

The amount of cladding light is important to ensure longevity of high power fiber components. However, it is usually measured either by adding a cladding light stripper (and thus permanently modifying the fiber) or by using a pinhole to only transmit the core light (ignoring that there may be cladding mode content in the core area). We present a novel noninvasive method to measure the cladding light content in double-clad fibers based on extrapolation from a cladding region of constant average intensity. The method can be extended to general multi-layer radially symmetric fibers, e.g. to evaluate light content in refractive index pedestal structures. To effectively remove cladding light in high power systems, cladding light strippers are used. We show that the stripping efficiency can be significantly improved by bending the fiber in such a device and present respective experimental data. Measurements were performed with respect to the numerical aperture as well, showing the dependency of the CLS efficiency on the NA of the cladding light and implying that efficiency data cannot reliably be given for a certain fiber in general without regard to the properties of the guided light.

Photoluminescence spectra of n-ZnO/p-GaN:(Er + Zn) and p-AlGaN:(Er + Zn) heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mezdrogina, M. M., E-mail: margaret.m@mail.ioffe.ru; Krivolapchuk, V. V., E-mail: vlad.krivol@mail.ioffe.ru; Feoktistov, N. A.

2008-07-15

Luminescence intensity of heterostructures based on n-ZnO/p-GaN:(Er + Zn) and n-ZnO/AlGaN:(Er + Zn) is higher by more than an order of magnitude than the corresponding intensity of separate n-ZnO, p-GaN:(Er + Zn), and AlGaN:(Er + Zn) layers. Most likely, this phenomenon is due to the effective tunneling recombination of charge carriers caused by a decrease in the concentration of the nonradiative recombination centers located between the n-ZnO/p-GaN:(Er + Zn) and n-ZnO/AlGaN:(Er + Zn) layers.

AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si 3N 4

NASA Astrophysics Data System (ADS)

Cheng, Kai; Leys, M.; Derluyn, J.; Degroote, S.; Xiao, D. P.; Lorenz, A.; Boeykens, S.; Germain, M.; Borghs, G.

2007-01-01

AlGaN/GaN high electron mobility transistors (HEMTs) have been grown on 4 and 6 in Si(1 1 1) substrates by metal organic vapor phase epitaxy (MOVPE). A record sheet resistance of 256 Ω/□ has been measured by contactless eddy current mapping on 4 in silicon substrates. The wafer also shows an excellent uniformity and the standard variation is 3.6 Ω/□ over the whole wafer. These values were confirmed by Hall-Van der Pauw measurements. In the 2DEG at the AlGaN/GaN interface, the electron mobility is in the range of 1500-1800 cm 2/Vs and the electron density is between 1.3×10 13 and 1.7×10 13 cm -2. The key step in obtaining these results is an in-situ deposited Si 3N 4 passivation layer. This in-situ Si 3N 4, deposited directly after AlGaN top layer growth in the MOVPE reactor chamber, not only prevents the stress relaxation in AlGaN/GaN hetero-structures but also passivates the surface states of the AlGaN cap layer. HEMT transistors have been processed on the epitaxial structures and the maximum source-drain current density is 1.1 A/mm for a gate-source voltage of 2 V. The current collapse is minimized thanks to in-situ Si 3N 4. First results on AlGaN/GaN structures grown on 6 in Si(1 1 1) are also presented.

Effect of quantum-well thickness on the optical polarization of AlGaN-based ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Liu, Cheng; Zhang, Jing

2018-02-01

Optical polarization from AlGaN quantum well (QW) is crucial for realizing high-efficiency deep-ultraviolet (UV) light-emitting diodes (LEDs) because it determines the light emission patterns and light extraction mechanism of the devices. As the Al-content of AlGaN QW increases, the valence bands order changes and consequently the light polarization switches from transverse-electric (TE) to transverse-magnetic (TM) owing to the different sign and the value of the crystal field splitting energy between AlN (-169meV) and GaN (10meV). Several groups have reported that the ordering of the bands and the TE/TM crossover Al-content could be influenced by the strain state and the quantum confinement from the AlGaN QW system. In this work, we investigate the influence of QW thickness on the optical polarization switching point from AlGaN QW with AlN barriers by using 6-band k•p model. The result presents a decreasing trend of the critical Al-content where the topmost valence band switches from heave hole (HH) to crystal field spilt-off (CH) with increasing QW thicknesses due to the internal electric field and the strain state from the AlGaN QW. Instead, the TE- and TM-polarized spontaneous emission rates switching Al-content rises first and falls later because of joint consequence of the band mixing effect and the Quantum Confined Stark Effect. The reported optical polarization from AlGaN QW emitters in the UV spectral range is assessed in this work and the tendency of the polarization switching point shows great consistency with the theoretical results, which deepens the understanding of the physics from AlGaN QW UV LEDs.

Control of Defects in Aluminum Gallium Nitride ((Al)GaN) Films on Grown Aluminum Nitride (AlN) Substrates

DTIC Science & Technology

2013-02-01

Nord, J.; Albe, K.; Erhart, P.; Nordlund, K. Modelling of Compound Semiconductors: Analytical Bond-order Potential for Gallium , Nitrogen and Gallium ...Control of Defects in Aluminum Gallium Nitride ((Al)GaN) Films on Grown Aluminum Nitride (AlN) Substrates by Iskander G. Batyrev, Chi-Chin Wu...Aluminum Gallium Nitride ((Al)GaN) Films on Grown Aluminum Nitride (AlN) Substrates Iskander G. Batyrev and N. Scott Weingarten Weapons and

Fabrication of Very High Efficiency 5.8 GHz Power Amplifiers using AlGaN HFETs on SiC Substrates for Wireless Power Transmission

NASA Technical Reports Server (NTRS)

Sullivan, Gerry

2001-01-01

For wireless power transmission using microwave energy, very efficient conversion of the DC power into microwave power is extremely important. Class E amplifiers have the attractive feature that they can, in theory, be 100% efficient at converting, DC power to RF power. Aluminum gallium nitride (AlGaN) semiconductor material has many advantageous properties, relative to silicon (Si), gallium arsenide (GaAs), and silicon carbide (SiC), such as a much larger bandgap, and the ability to form AlGaN/GaN heterojunctions. The large bandgap of AlGaN also allows for device operation at higher temperatures than could be tolerated by a smaller bandgap transistor. This could reduce the cooling requirements. While it is unlikely that the AlGaN transistors in a 5.8 GHz class E amplifier can operate efficiently at temperatures in excess of 300 or 400 C, AlGaN based amplifiers could operate at temperatures that are higher than a GaAs or Si based amplifier could tolerate. Under this program, AlGaN microwave power HFETs have been fabricated and characterized. Hybrid class E amplifiers were designed and modeled. Unfortunately, within the time frame of this program, good quality HFETs were not available from either the RSC laboratories or commercially, and so the class E amplifiers were not constructed.

Surface passivation and self-regulated shell growth in selective area-grown GaN-(Al,Ga)N core-shell nanowires.

PubMed

Hetzl, Martin; Winnerl, Julia; Francaviglia, Luca; Kraut, Max; Döblinger, Markus; Matich, Sonja; Fontcuberta I Morral, Anna; Stutzmann, Martin

2017-06-01

The large surface-to-volume ratio of GaN nanowires implicates sensitivity of the optical and electrical properties of the nanowires to their surroundings. The implementation of an (Al,Ga)N shell with a larger band gap around the GaN nanowire core is a promising geometry to seal the GaN surface. We investigate the luminescence and structural properties of selective area-grown GaN-(Al,Ga)N core-shell nanowires grown on Si and diamond substrates. While the (Al,Ga)N shell allows a suppression of yellow defect luminescence from the GaN core, an overall intensity loss due to Si-related defects at the GaN/(Al,Ga)N interface has been observed in the case of Si substrates. Scanning transmission electron microscopy measurements indicate a superior crystal quality of the (Al,Ga)N shell along the nanowire side facets compared to the (Al,Ga)N cap at the top facet. A nucleation study of the (Al,Ga)N shell reveals a pronounced bowing of the nanowires along the c-direction after a short deposition time which disappears for longer growth times. This is assigned to an initially inhomogeneous shell nucleation. A detailed study of the proceeding shell growth allows the formulation of a strain-driven self-regulating (Al,Ga)N shell nucleation model.

Physical and electrical characterizations of AlGaN/GaN MOS gate stacks with AlGaN surface oxidation treatment

NASA Astrophysics Data System (ADS)

Yamada, Takahiro; Watanabe, Kenta; Nozaki, Mikito; Shih, Hong-An; Nakazawa, Satoshi; Anda, Yoshiharu; Ueda, Tetsuzo; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

2018-06-01

The impacts of inserting ultrathin oxides into insulator/AlGaN interfaces on their electrical properties were investigated to develop advanced AlGaN/GaN metal–oxide–semiconductor (MOS) gate stacks. For this purpose, the initial thermal oxidation of AlGaN surfaces in oxygen ambient was systematically studied by synchrotron radiation X-ray photoelectron spectroscopy (SR-XPS) and atomic force microscopy (AFM). Our physical characterizations revealed that, when compared with GaN surfaces, aluminum addition promotes the initial oxidation of AlGaN surfaces at temperatures of around 400 °C, followed by smaller grain growth above 850 °C. Electrical measurements of AlGaN/GaN MOS capacitors also showed that, although excessive oxidation treatment of AlGaN surfaces over around 700 °C has an adverse effect, interface passivation with the initial oxidation of the AlGaN surfaces at temperatures ranging from 400 to 500 °C was proven to be beneficial for fabricating high-quality AlGaN/GaN MOS gate stacks.

A model to describe the surface gradient-nanograin formation and property of friction stir processed laser Co-Cr-Ni-Mo alloy

NASA Astrophysics Data System (ADS)

Li, Ruidi; Yuan, Tiechui; Qiu, Zili

2014-07-01

A gradient-nanograin surface layer of Co-base alloy was prepared by friction stir processing (FSP) of laser-clad coating in this work. However, it is lack of a quantitatively function relationship between grain refinement and FSP conditions. Based on this, an analytic model is derived for the correlations between carbide size, hardness and rotary speed, layer depth during in-situ FSP of laser-clad Co-Cr-Ni-Mo alloy. The model is based on the principle of typical plastic flow in friction welding and dynamic recrystallization. The FSP experiment for modification of laser-clad Co-based alloy was conducted and its gradient nanograin and hardness were characterized. It shows that the model is consistent with experimental results.

Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding

NASA Astrophysics Data System (ADS)

Zhang, Li; Lee, Kwang Hong; Kadir, Abdul; Wang, Yue; Lee, Kenneth E.; Tan, Chuan Seng; Chua, Soo Jin; Fitzgerald, Eugene A.

2018-05-01

Crack-free 200 mm diameter N-polar GaN-on-insulator (GaN-OI) wafers are demonstrated by the transfer of metalorganic chemical vapor deposition (MOCVD)-grown Ga-polar GaN layers from Si(111) wafers onto SiO2/Si(100) wafers. The wafer curvature of the GaN-OI wafers after the removal of the original Si(111) substrate is correlated with the wafer curvature of the starting GaN-on-Si wafers and the voids on the GaN-on-Si surface that evolve into cracks on the GaN-OI wafers. In crack-free GaN-OI wafers, the wafer curvature during the removal of the AlN nucleation layer, AlGaN strain-compensation buffer layers and GaN layers is correlated with the residual stress distribution within individual layers in the GaN-OI wafer.

High-power AlGaInN lasers for Blu-ray disc system

NASA Astrophysics Data System (ADS)

Takeya, Motonubu; Ikeda, Shinroh; Sasaki, Tomomi; Fujimoto, Tsuyoshi; Ohfuji, Yoshio; Mizuno, Takashi; Oikawa, Kenji; Yabuki, Yoshifumi; Uchida, Shiro; Ikeda, Masao

2003-07-01

This paper describes an improved laser structure for AlGaInN based blue-violet lasers (BV-LDs). The design realizes a small beam divergence angle perpendicular to the junction plane and high characteristic temperature wihtout significant increase in threshold current density (Jth) by optimizing the position of the Mg-doped layer and introducing an undoped AlGaN layer between the active layer and the Mg-doped electron-blocking layer. The mean time to failure (MTTF) of devices based on this design was found to be closely related to the dislocation density of ELO-GaN basal layer. Under 50 mW CW operation at 70°C, a MTTF of over 5000 h was realized whenthe dark spot density (indicative of dislocation density) is less than ~5×106 cm-2. Power consumption under 50mW CW operation at 70°C was approximately 0.33 W, independent of the dislocation density.

Crack Free Tungsten Carbide Reinforced Ni(Cr) Layers obtained by Laser Cladding

NASA Astrophysics Data System (ADS)

Amado, J. M.; Tobar, M. J.; Yáñez, A.; Amigó, V.; Candel, J. J.

The development of hardfacing coatings has become technologically significant in many industries A common approach is the production of metal matrix composites (MMC) layers. In this work NiCr-WC MMC hardfacing layers are deposited on C25 steel by means of laser cladding. Spheroidal fused tungsten carbides is used as reinforcement phase. Three different NiCr alloys with different Cr content were tested. Optimum conditions to obtain dense, uniform carbide distribution and hardness close to nominal values were defined. The effect of Cr content respect to the microstructure, susceptibility for cracking and the wear rate of the resulting coating will also be discussed.

Novel Quantum Dot Gate FETs and Nonvolatile Memories Using Lattice-Matched II-VI Gate Insulators

NASA Astrophysics Data System (ADS)

Jain, F. C.; Suarez, E.; Gogna, M.; Alamoody, F.; Butkiewicus, D.; Hohner, R.; Liaskas, T.; Karmakar, S.; Chan, P.-Y.; Miller, B.; Chandy, J.; Heller, E.

2009-08-01

This paper presents the successful use of ZnS/ZnMgS and other II-VI layers (lattice-matched or pseudomorphic) as high- k gate dielectrics in the fabrication of quantum dot (QD) gate Si field-effect transistors (FETs) and nonvolatile memory structures. Quantum dot gate FETs and nonvolatile memories have been fabricated in two basic configurations: (1) monodispersed cladded Ge nanocrystals (e.g., GeO x -cladded-Ge quantum dots) site-specifically self-assembled over the lattice-matched ZnMgS gate insulator in the channel region, and (2) ZnTe-ZnMgTe quantum dots formed by self-organization, using metalorganic chemical vapor-phase deposition (MOCVD), on ZnS-ZnMgS gate insulator layers grown epitaxially on Si substrates. Self-assembled GeO x -cladded Ge QD gate FETs, exhibiting three-state behavior, are also described. Preliminary results on InGaAs-on-InP FETs, using ZnMgSeTe/ZnSe gate insulator layers, are presented.

Plasmonic based light manipulation and applications in AIGaN deep-UV devices (Conference Presentation)

NASA Astrophysics Data System (ADS)

Yin, Jun; Li, Jing; Kang, Junyong

2016-09-01

Recently, surface plasmon (SP)-exciton coupling has been wildly applied in nitride semiconductors in order to improve the spontaneous radiative recombination rate [1-3]. However, most works have been focused on the emission enhancement in InGaN-based blue or green light emitting diodes (LEDs). Practically, it is significantly important to improve the emission efficiency in deep-UV AlGaN-base quantum well (QW) structure due to its intrinsically low internal quantum efficiency (IQE) induced by the high defect density in its epitaxy layer [4]. But, the effective SP-exciton coupling with matched energy in deep-UV region is still a challenge issue due to the lack of appropriate metal structures and compatible fabrication techniques. In this work, the Al nanoparticles (NPs) were introduced by the nanosphere lithography (NSL) and deposition techniques into the AlGaN based MQWs with optimized size and structure. Due to the local surface plasmon (LSP) coupling with the excitons in QWs, emission enhancement in deep UV region has been achieved in the Al NPs decorated AlGaN MQWs structure with comparison to the bare MQWs. Theoretical calculations on the energy subbands of AlGaN QWs were further carried out to investigate the corresponding mechanisms, in which the hot carrier transition activated by SP-exciton coupling was believed to be mainly responsible for the enhancement. This work demonstrated a low cost, wafer scale fabrication process, which can be potentially employed to the practical SP-enhanced AlGaN-based deep UV LEDs with high IQEs.

Insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor devices with Al2O3 or AlTiO gate dielectrics

NASA Astrophysics Data System (ADS)

Le, Son Phuong; Nguyen, Duong Dai; Suzuki, Toshi-kazu

2018-01-01

We have investigated insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor (MIS) devices with Al2O3 or AlTiO (an alloy of Al2O3 and TiO2) gate dielectrics obtained by atomic layer deposition on AlGaN. Analyzing insulator-thickness dependences of threshold voltages for the MIS devices, we evaluated positive interface fixed charges, whose density at the AlTiO/AlGaN interface is significantly lower than that at the Al2O3/AlGaN interface. This and a higher dielectric constant of AlTiO lead to rather shallower threshold voltages for the AlTiO gate dielectric than for Al2O3. The lower interface fixed charge density also leads to the fact that the two-dimensional electron concentration is a decreasing function of the insulator thickness for AlTiO, whereas being an increasing function for Al2O3. Moreover, we discuss the relationship between the interface fixed charges and interface states. From the conductance method, it is shown that the interface state densities are very similar at the Al2O3/AlGaN and AlTiO/AlGaN interfaces. Therefore, we consider that the lower AlTiO/AlGaN interface fixed charge density is not owing to electrons trapped at deep interface states compensating the positive fixed charges and can be attributed to a lower density of oxygen-related interface donors.

Compact cladding-pumped planar waveguide amplifier and fabrication method

DOEpatents

Bayramian, Andy J.; Beach, Raymond J.; Honea, Eric; Murray, James E.; Payne, Stephen A.

2003-10-28

A low-cost, high performance cladding-pumped planar waveguide amplifier and fabrication method, for deployment in metro and access networks. The waveguide amplifier has a compact monolithic slab architecture preferably formed by first sandwich bonding an erbium-doped core glass slab between two cladding glass slabs to form a multi-layer planar construction, and then slicing the construction into multiple unit constructions. Using lithographic techniques, a silver stripe is deposited and formed at a top or bottom surface of each unit construction and over a cross section of the bonds. By heating the unit construction in an oven and applying an electric field, the silver stripe is then ion diffused to increase the refractive indices of the core and cladding regions, with the diffusion region of the core forming a single mode waveguide, and the silver diffusion cladding region forming a second larger waveguide amenable to cladding pumping with broad area diodes.

Structure Formation and Properties of Weld Overlay Produced by Laser Cladding under the Influence of Nanoparticles of High-melting Compounds

NASA Astrophysics Data System (ADS)

Murzakov, M.; Petrovskiy, V.; Birukov, V.; Dzhumaev, P.; Polski, V.; Markushov, Y.; Bykovskiy, D.

Researches of flat samples using laser cladding technology were carried out. Nickel-based powders with the addition of nanopowders of tantalum carbide and tungsten carbide with water-based hydroxyethylcellulose as the binder, were used for slip cladding. Powders are fused on under local argon protection. The experiments were carried out to determine minimal base metal penetration depth, microhardness distribution over cross section of substrate and deposited layers, enrichment level of cladding metal with base components depending on power density and deposition rate. Metallographic studies of obtained overlays were conducted using a high-precision analytical equipment.

Numerical modelling on stimulated Brillouin scattering characterization for Graphene-clad tapered silica fiber

NASA Astrophysics Data System (ADS)

Lee, Hui Jing; Abdullah, Fairuz; Ismail, Aiman

2017-11-01

This paper presents finite numerical modelling on the cross-sectional region of tapered single mode fiber and graphene-clad tapered fiber. Surface acoustic wave propagation across the tapered surface region on tapered single mode fiber has a high threshold power at 61.87 W which is challenging to overcome by the incident pump wave. Surface acoustic wave propagation of fiber surface however made tapered wave plausible in the optical sensor application. This research introduces graphene as the cladding layer on tapered fiber, acoustic confinement occurs due to the graphene cladding which lowers the threshold power from 61.87 W to 2.17 W.

High power operation of cladding pumped holmium-doped silica fibre lasers.

PubMed

Hemming, Alexander; Bennetts, Shayne; Simakov, Nikita; Davidson, Alan; Haub, John; Carter, Adrian

2013-02-25

We report the highest power operation of a resonantly cladding-pumped, holmium-doped silica fibre laser. The cladding pumped all-glass fibre utilises a fluorine doped glass layer to provide low loss cladding guidance of the 1.95 µm pump radiation. The operation of both single mode and large-mode area fibre lasers was demonstrated, with up to 140 W of output power achieved. A slope efficiency of 59% versus launched pump power was demonstrated. The free running emission was measured to be 2.12-2.15 µm demonstrating the potential of this architecture to address the long wavelength operation of silica based fibre lasers with high efficiency.

Fast Solar-Blind AlGaN/GaN 2DEG UV detector with Transparent Graphene Electrode

DTIC Science & Technology

2017-03-01

graphene and 2D electron gas (2DEG). With introducing the graphene, photo-carriers separated by the polarization electric field of the AlGaN are...photodiodes, due to the strong intrinsic polarization effect of AlGaN. More than 105 of high signal to noise ratio of the UV detectors with fast...intrinsic polarization field vertically inside the AlGaN, the holes and electrons will travel in their shortest paths to graphene and 2DEG

Electrically pumped edge-emitting photonic bandgap semiconductor laser

DOEpatents

Lin, Shawn-Yu; Zubrzycki, Walter J.

2004-01-06

A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

Measure Guideline: Transitioning from Three-Coat Stucco to One-Coat Stucco with EPS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brozyna, K.; Davis, G.; Rapport, A.

2012-04-01

This Measure Guideline has been developed to help builders transition from using a traditional three-coat stucco wall-cladding system to a one-coat stucco wall-cladding system with expanded polystyrene (EPS) insulated sheathing. The three-coat system uses a base layer, a fill layer, and a finish layer. The one-coat system maintains the look of a traditional stucco system but uses only a base layer and a finish coat over EPS insulation that achieves higher levels of energy efficiency. Potential risks associated with the installation of a one-coat stucco system are addressed in terms of design, installation, and warranty concerns such as cracking andmore » delamination, along with mitigation strategies to reduce these risks.« less

Hydrogen permeation in FeCrAl alloys for LWR cladding application

NASA Astrophysics Data System (ADS)

Hu, Xunxiang; Terrani, Kurt A.; Wirth, Brian D.; Snead, Lance L.

2015-06-01

FeCrAl, an advanced oxidation-resistant iron-based alloy class, is a highly prevalent candidate as an accident-tolerant fuel cladding material. Compared with traditional zirconium alloy fuel cladding, increased tritium permeation through FeCrAl fuel cladding to the primary coolant is expected, raising potential safety concerns. In this study, the hydrogen permeability of several FeCrAl alloys was obtained using a static permeation test station, which was calibrated and validated using 304 stainless steel. The high hydrogen permeability of FeCrAl alloys leads to concerns with respect to potentially significant tritium release when used for fuel cladding in LWRs. The total tritium inventory inside the primary coolant of a light water reactor was quantified by applying a 1-dimensional steady state tritium diffusion model to demonstrate the dependence of tritium inventory on fuel cladding type. Furthermore, potential mitigation strategies for tritium release from FeCrAl fuel cladding were discussed and indicate the potential for application of an alumina layer on the inner clad surface to serve as a tritium barrier. More effort is required to develop a robust, economical mitigation strategy for tritium permeation in reactors using FeCrAl clad fuel assemblies.

Development of Protective Coatings for Chromium-Base Alloys

NASA Technical Reports Server (NTRS)

English, J. J.; MacMillan, C. A.; Williams, D. N.; Bartlett, E. S.

1966-01-01

Chromium alloy sheet was clad with 5 to 10-mil-thick oxidation-resistant nickel-base alloy foils. Specimens also contained 1/2 to 1-mil-thick intermediate layers of platinum, tungsten, and/or W-25Re. Cladding was done by the isostatic hot gas-pressure bonding,.process. The clad chromium-alloy specimens were cyclic oxidation tested at 2100 F and 2300 F for up to 200 hours to determine the effectiveness of these metal claddings in protecting the chromium alloy Cr-5W from oxidation and contamination. Cladding systems consisting of 5-mil-thick Ni-20Cr-20W modified with 3 to 5 weight percent aluminum and containing a 1 /2-mil tungsten diffusion barrier demonstrated potential for long-time service at temperatures as high as 2300 F.

Cracking of a layered medium on an elastic foundation under thermal shock

NASA Technical Reports Server (NTRS)

Rizk, Abd El-Fattah A.; Erdogan, Fazil

1988-01-01

The cladded pressure vessel under thermal shock conditions which is simulated by using two simpler models was studied. The first model (Model 1) assumes that, if the crack size is very small compared to the vessel thickness, the problem can be treated as a semi-infinite elastic medium bonded to a very thin layer of different material. However, if the crack size is of the same order as the vessel thickness, the curvature effects may not be negligible. In this case it is assumed that the relatively thin walled hollow cylinder with cladding can be treated as a composite beam on an elastic foundation (Model 2). In both models, the effect of surface cooling rate is studied by assuming the temperature boundary condition to be a ramp function. The calculated results include the transient temperature, thermal stresses in the uncracked medium and stress intensity factors which are presented as a function of time, and the duration of cooling ramp. The stress intensity factors are also presented as a function of the size and the location of the crack. The problem is solved for two bonded materials of different thermal and mechanical properties. The mathematical formulation results in two singular integral equations which are solved numerically. The results are given for two material pairs, namely an austenitic steel layer welded on a ferritic steel substrate, and a ceramic coating on ferritic steel. In the case of the yielded clad, the stress intensity factors for a crack under the clad are determined by using a plastic strip model and are compared with elastic clad results.

Synchrotron X-ray diffraction investigations on strains in the oxide layer of an irradiated Zircaloy fuel cladding

NASA Astrophysics Data System (ADS)

Chollet, Mélanie; Valance, Stéphane; Abolhassani, Sousan; Stein, Gene; Grolimund, Daniel; Martin, Matthias; Bertsch, Johannes

2017-05-01

For the first time the microstructure of the oxide layer of a Zircaloy-2 cladding after 9 cycles of irradiation in a boiling water reactor has been analyzed with synchrotron micro-X-ray diffraction. Crystallographic strains of the monoclinic and to some extent of the tetragonal ZrO2 are depicted through the thick oxide layer. Thin layers of sub-oxide at the oxide-metal interface as found for autoclave-tested samples and described in the literature, have not been observed in this material maybe resulting from irradiation damage. Shifts of selected diffraction peaks of the monoclinic oxide show that the uniform strain produced during oxidation is orientated in the lattice and displays variations along the oxide layer. Diffraction peaks and their shifts from families of diffracting planes could be translated into a virtual tensor. This virtual tensor exhibits changes through the oxide layer passing by tensile or compressive components.

Effect of Variation of Silicon Nitride Passivation Layer on Electron Irradiated Aluminum Gallium Nitride/Gallium Nitride HEMT Structures

DTIC Science & Technology

2014-06-19

the AlGaN is unintentionally doped . Figure 2.3. AlGaN/GaN band diagram showing polarization charges. The band diagram in Figure 2.3 shows...intentionally doped as are MESFETS, and the channel gets its electrons from the unintentional doping . There is less Coulomb scattering in the...temperature measurements are often used to provide spatial PL maps of doping and trap densities. Laser excitation (quasi-monochromatic) is

Donors, Acceptors, and Traps in AlGaN and AlGaN/GaN Epitaxial Layers

DTIC Science & Technology

2006-07-31

the background. 3.3 Positron annihilation spectroscopy (PAS): acceptor-type defects Positrons injected into defect-free GaN are annihilated by electrons...electron concentration n, and the average Ga-vacancy VGa concentration deduced from positron annihilation spectroscopy . 0.09 3.47 3.46 - 3.45 •ŗ.47225...of this paper, are often investigated by deep level transient spectroscopy (DLTS), and the usual analysis of DLTS data is based on the assumption that

WRC bulletin. A review of underclad cracking in pressure-vessel components

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vinckier, A.G.; Pense, A.W.

1974-01-01

This review of cracking underneath the weld cladding is to determine what factors contribute to this condition, and to outline means for alleviating or eliminating this condition. Considerable data on manufacture, heat treatment, and cladding of heavy-section pressure-vessel steels for nuclear service are also included. Three factors in combination that promote underclad cracking are susceptible microstructure, favorable residual-stress pattern, and a thermal treatment bringing the steel into a critical temperature region (600-650/sup 0/C) where creep ductility is low. High-heat-input weld-overlay cladding produces the susceptible microstructure and residual-stress pattern and postweld heat treatment produces the critical temperature. Most underclad cracking wasmore » found in SA508 Class 2 steel forgings clad with one-layer submerged-arc strip electrodes or multi-electrode processes. It was not produced in SA533 Grade B plate or when multilayer overlay processes were used. Underclad cracking can be reduced or eliminated by a two-layer cladding technique, by controlling welding process variables (low heat input), renormalizing the sensitive HAZ region prior to heat treatment, by use of nonsusceptible materials, or by eliminating the postweld heat treatment. Results of a questionnaire survey are also included. 50 references. (DLC)« less

Microstructural Characterization of High Burn-up Mixed Oxide Fast Reactor Fuel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Melissa C. Teague; Brian P. Gorman; Steven L. Hayes

2013-10-01

High burn-up mixed oxide fuel with local burn-ups of 3.4–23.7% FIMA (fissions per initial metal atom) were destructively examined as part of a research project to understand the performance of oxide fuel at extreme burn-ups. Optical metallography of fuel cross-sections measured the fuel-to-cladding gap, clad thickness, and central void evolution in the samples. The fuel-to-cladding gap closed significantly in samples with burn-ups below 7–9% FIMA. Samples with burn-ups in excess of 7–9% FIMA had a reopening of the fuel-to-cladding gap and evidence of joint oxide-gain (JOG) formation. Signs of axial fuel migration to the top of the fuel column weremore » observed in the fuel pin with a peak burn-up of 23.7% FIMA. Additionally, high burn-up structure (HBS) was observed in the two highest burn-up samples (23.7% and 21.3% FIMA). The HBS layers were found to be 3–5 times thicker than the layers found in typical LWR fuel. The results of the study indicate that formation of JOG and or HBS prevents any significant fuel-cladding mechanical interaction from occurring, thereby extending the potential life of the fuel elements.« less

Enhancing the performance of blue GaN-based light emitting diodes with double electron blocking layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Yao; Liang, Meng; Fu, Jiajia

2015-03-15

In this work, novel double Electron Blocking Layers for InGaN/GaN multiple quantum wells light-emitting diodes were proposed to mitigate the efficiency droop at high current density. The band diagram and carriers distributions were investigated numerically. The results indicate that due to a newly formed holes stack in the p-GaN near the active region, the hole injection has been improved and an uniform carriers distribution can be achieved. As a result, in our new structure with double Electron Blocking Layers, the efficiency droop has been reduced to 15.5 % in comparison with 57.3 % for the LED with AlGaN EBL atmore » the current density of 100 A/cm{sup 2}.« less

Effects of Mg-doped AlN/AlGaN superlattices on properties of p-GaN contact layer and performance of deep ultraviolet light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Al tahtamouni, T. M., E-mail: talal@yu.edu.jo; Lin, J. Y.; Jiang, H. X.

2014-04-15

Mg-doped AlN/AlGaN superlattice (Mg-SL) and Mg-doped AlGaN epilayers have been investigated in the 284 nm deep ultraviolet (DUV) light emitting diodes (LEDs) as electron blocking layers. It was found that the use of Mg-SL improved the material quality of the p-GaN contact layer, as evidenced in the decreased density of surface pits and improved surface morphology and crystalline quality. The performance of the DUV LEDs fabricated using Mg-SL was significantly improved, as manifested by enhanced light intensity and output power, and reduced turn-on voltage. The improved performance is attributed to the enhanced blocking of electron overflow, and enhanced hole injection.

Control of short-channel effects in InAlN/GaN high-electron mobility transistors using graded AlGaN buffer

NASA Astrophysics Data System (ADS)

Han, Tiecheng; Zhao, Hongdong; Peng, Xiaocan; Li, Yuhai

2018-04-01

A graded AlGaN buffer is designed to realize the p-type buffer by inducing polarization-doping holes. Based on the two-dimensional device simulator, the effect of the graded AlGaN buffer on the direct-current (DC) and radio-frequency (RF) performance of short-gate InAlN/GaN high-electron mobility transistors (HEMTs) are investigated, theoretically. Compared to standard HEMT, an enhancement of electron confinement and a good control of short-channel effect (SCEs) are demonstrated in the graded AlGaN buffer HEMT. Accordingly, the pinched-off behavior and the ability of gate modulation are significantly improved. And, no serious SCEs are observed in the graded AlGaN buffer HEMT with an aspect ratio (LG/tch) of about 6.7, much lower than that of the standard HEMT (LG/tch = 13). In addition, for a 70-nm gate length, a peak current gain cutoff frequency (fT) of 171 GHz and power gain cutoff frequency (fmax) of 191 GHz are obtained in the grade buffer HEMT, which are higher than those of the standard one with the same gate length.

Large-Format AlGaN PIN Photodiode Arrays for UV Images

NASA Technical Reports Server (NTRS)

Aslam, Shahid; Franz, David

2010-01-01

A large-format hybridized AlGaN photodiode array with an adjustable bandwidth features stray-light control, ultralow dark-current noise to reduce cooling requirements, and much higher radiation tolerance than previous technologies. This technology reduces the size, mass, power, and cost of future ultraviolet (UV) detection instruments by using lightweight, low-voltage AlGaN detectors in a hybrid detector/multiplexer configuration. The solar-blind feature eliminates the need for additional visible light rejection and reduces the sensitivity of the system to stray light that can contaminate observations.

On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Zi-Hui; Ji, Yun; Liu, Wei

2014-02-17

In this work, the origin of electron blocking effect of n-type Al{sub 0.25}Ga{sub 0.75}N electron blocking layer (EBL) for c+ InGaN/GaN light-emitting diodes has been investigated through dual-wavelength emission method. It is found that the strong polarization induced electric field within the n-EBL reduces the thermal velocity and correspondingly the mean free path of the hot electrons. As a result, the electron capture efficiency of the multiple quantum wells is enhanced, which significantly reduces the electron overflow from the active region and increases the radiative recombination rate with holes.

Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission

DOE Office of Scientific and Technical Information (OSTI.GOV)

Young, Erin C.; Wu Feng; Haeger, Daniel A.

In this Letter, we report on the growth and properties of relaxed, compositionally graded Al{sub x}Ga{sub 1-x}N buffer layers on freestanding semipolar (2021) GaN substrates. Continuous and step compositional grades with Al concentrations up to x = 0.61 have been achieved, with emission wavelengths in the mid-ultraviolet region as low as 265 nm. Coherency stresses were relaxed progressively throughout the grades by misfit dislocation generation via primary (basal) slip and secondary (non-basal) slip systems. Threading dislocation densities in the final layers of the grades were less than 10{sup 6}/cm{sup 2} as confirmed by plan-view transmission electron microscopy and cathodoluminescence studies.

Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission

NASA Astrophysics Data System (ADS)

Young, Erin C.; Wu, Feng; Romanov, Alexey E.; Haeger, Daniel A.; Nakamura, Shuji; Denbaars, Steven P.; Cohen, Daniel A.; Speck, James S.

2012-10-01

In this Letter, we report on the growth and properties of relaxed, compositionally graded AlxGa1 - xN buffer layers on freestanding semipolar (202¯1) GaN substrates. Continuous and step compositional grades with Al concentrations up to x = 0.61 have been achieved, with emission wavelengths in the mid-ultraviolet region as low as 265 nm. Coherency stresses were relaxed progressively throughout the grades by misfit dislocation generation via primary (basal) slip and secondary (non-basal) slip systems. Threading dislocation densities in the final layers of the grades were less than 106/cm2 as confirmed by plan-view transmission electron microscopy and cathodoluminescence studies.

An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: preferential outcoupling of strong in-plane emission (Conference Presentation)

NASA Astrophysics Data System (ADS)

Kim, Jong Kyu; Lee, Jong Won; Kim, Dong-Yeong; Park, Jun Hyuk; Schubert, E. Fred; Kim, Jungsub; Kim, Yong-Il

2016-09-01

AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) are being developed for their numerous applications such as purification of air and water, sterilization in food processing, UV curing, medical-, and defense-related light sources. However, external quantum efficiency (EQE) of AlGaN-based DUV LEDs is very poor (<5% for 250nm) particularly due to low hole concentration and light extraction efficiency (LEE). Conventional LEE-enhancing techniques used for GaInN-based visible LEDs turned out to be ineffective for DUV LEDs due to difference in intrinsic material property between GaInN and AlGaN (Al< 30%). Unlike GaInN visible LEDs, DUV light from a high Al-content AlGaN active region is strongly transverse-magnetic (TM) polarized, that is, the electric field vector is parallel to the (0001) c-axis and shows strong sidewall emission through m- or a-plane due to crystal-field split-off hole band being top most valence band. Therefore, a new LEE-enhancing approach addressing the unique intrinsic property of AlGaN DUV LEDs is strongly desired. In this study, an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells is presented. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage simultaneously. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes to maximize the power conversion efficiency.

Erosion and corrosion resistance of laser cladded AISI 420 stainless steel reinforced with VC

NASA Astrophysics Data System (ADS)

Zhang, Zhe; Yu, Ting; Kovacevic, Radovan

2017-07-01

Metal Matrix Composites (MMC) fabricated by the laser cladding process have been widely applied as protective coatings in industries to improve the wear, erosion, and corrosion resistance of components and prolong their service life. In this study, the AISI 420/VC metal matrix composites with different weight percentage (0 wt.%-40 wt.%) of Vanadium Carbide (VC) were fabricated on a mild steel A36 by a high power direct diode laser. An induction heater was used to preheat the substrate in order to avoid cracks during the cladding process. The effect of carbide content on the microstructure, elements distribution, phases, and microhardness was investigated in detail. The erosion resistance of the coatings was tested by using the abrasive waterjet (AWJ) cutting machine. The corrosion resistance of the coatings was studied utilizing potentiodynamic polarization. The results showed that the surface roughness and crack susceptibility of the laser cladded layer were increased with the increase in VC fraction. The volume fraction of the precipitated carbides was increased with the increase in the VC content. The phases of the coating without VC consisted of martensite and austenite. New phases such as precipitated VC, V8C7, M7C3, and M23C6 were formed when the primary VC was added. The microhardness of the clads was increased with the increase in VC. The erosion resistance of the cladded layer was improved after the introduction of VC. The erosion resistance was increased with the increase in the VC content. No obvious improvement of erosion resistance was observed when the VC fraction was above 30 wt.%. The corrosion resistance of the clads was decreased with the increase in the VC content, demonstrating the negative effect of VC on the corrosion resistance of AISI 420 stainless steel

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

NASA Astrophysics Data System (ADS)

Bryan, Isaac; Bryan, Zachary; Washiyama, Shun; Reddy, Pramod; Gaddy, Benjamin; Sarkar, Biplab; Breckenridge, M. Hayden; Guo, Qiang; Bobea, Milena; Tweedie, James; Mita, Seiji; Irving, Douglas; Collazo, Ramon; Sitar, Zlatko

2018-02-01

In order to understand the influence of dislocations on doping and compensation in Al-rich AlGaN, thin films were grown by metal organic chemical vapor deposition (MOCVD) on different templates on sapphire and low dislocation density single crystalline AlN. AlGaN grown on AlN exhibited the highest conductivity, carrier concentration, and mobility for any doping concentration due to low threading dislocation related compensation and reduced self-compensation. The onset of self-compensation, i.e., the "knee behavior" in conductivity, was found to depend only on the chemical potential of silicon, strongly indicating the cation vacancy complex with Si as the source of self-compensation. However, the magnitude of self-compensation was found to increase with an increase in dislocation density, and consequently, AlGaN grown on AlN substrates demonstrated higher conductivity over the entire doping range.

Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates

DOE PAGES

Crawford, Mary H.; Allerman, Andrew A.; Armstrong, Andrew M.; ...

2015-10-30

We fabricated optically pumped and electrically injected ultraviolet (UV) lasers on reduced-threading-dislocation-density (reduced-TDD) AlGaN templates. The overgrowth of sub-micron-wide mesas in the Al 0.32Ga 0.68N templates enabled a tenfold reduction in TDD, to (2–3) × 10 8 cm –2. Optical pumping of AlGaN hetero-structures grown on the reduced-TDD templates yielded a low lasing threshold of 34 kW/cm 2 at 346 nm. Room-temperature pulsed operation of laser diodes at 353 nm was demonstrated, with a threshold of 22.5 kA/cm 2. Furthermore, reduced-TDD templates have been developed across the entire range of AlGaN compositions, presenting a promising approach for extending laser diodesmore » into the deep UV.« less

Mechanical Properties of Advanced Gas-Cooled Reactor Stainless Steel Cladding After Irradiation

NASA Astrophysics Data System (ADS)

Degueldre, Claude; Fahy, James; Kolosov, Oleg; Wilbraham, Richard J.; Döbeli, Max; Renevier, Nathalie; Ball, Jonathan; Ritter, Stefan

2018-05-01

The production of helium bubbles in advanced gas-cooled reactor (AGR) cladding could represent a significant hazard for both the mechanical stability and long-term storage of such materials. However, the high radioactivity of AGR cladding after operation presents a significant barrier to the scientific study of the mechanical properties of helium incorporation, said cladding typically being analyzed in industrial hot cells. An alternative non-active approach is to implant He2+ into unused AGR cladding material via an accelerator. Here, a feasibility study of such a process, using sequential implantations of helium in AGR cladding steel with decreasing energy is carried out to mimic the buildup of He (e.g., 50 appm) that would occur for in-reactor AGR clad in layers of the order of 10 µm in depth, is described. The implanted sample is subsequently analyzed by scanning electron microscopy, nanoindentation, atomic force and ultrasonic force microscopies. As expected, the irradiated zones were affected by implantation damage (< 1 dpa). Nonetheless, such zones undergo only nanoscopic swelling and a small hardness increase ( 10%), with no appreciable decrease in fracture strength. Thus, for this fluence and applied conditions, the integrity of the steel cladding is retained despite He2+ implantation.

Mechanical Properties of Advanced Gas-Cooled Reactor Stainless Steel Cladding After Irradiation

NASA Astrophysics Data System (ADS)

Degueldre, Claude; Fahy, James; Kolosov, Oleg; Wilbraham, Richard J.; Döbeli, Max; Renevier, Nathalie; Ball, Jonathan; Ritter, Stefan

2018-04-01

The production of helium bubbles in advanced gas-cooled reactor (AGR) cladding could represent a significant hazard for both the mechanical stability and long-term storage of such materials. However, the high radioactivity of AGR cladding after operation presents a significant barrier to the scientific study of the mechanical properties of helium incorporation, said cladding typically being analyzed in industrial hot cells. An alternative non-active approach is to implant He2+ into unused AGR cladding material via an accelerator. Here, a feasibility study of such a process, using sequential implantations of helium in AGR cladding steel with decreasing energy is carried out to mimic the buildup of He (e.g., 50 appm) that would occur for in-reactor AGR clad in layers of the order of 10 µm in depth, is described. The implanted sample is subsequently analyzed by scanning electron microscopy, nanoindentation, atomic force and ultrasonic force microscopies. As expected, the irradiated zones were affected by implantation damage (< 1 dpa). Nonetheless, such zones undergo only nanoscopic swelling and a small hardness increase ( 10%), with no appreciable decrease in fracture strength. Thus, for this fluence and applied conditions, the integrity of the steel cladding is retained despite He2+ implantation.

Hydrogen permeation in FeCrAl alloys for LWR cladding application

DOE PAGES

Hu, Xunxiang; Terrani, Kurt A.; Wirth, Brian D.; ...

2015-03-19

FeCrAl is an advanced oxidation-resistant iron-based alloy class, is a highly prevalent candidate as an accident-tolerant fuel cladding material. Compared with traditional zirconium alloy fuel cladding, increased tritium permeation through FeCrAl fuel cladding to the primary coolant is expected, raising potential safety concerns. In our study, the hydrogen permeability of several FeCrAl alloys was obtained using a static permeation test station, which was calibrated and validated using 304 stainless steel. The high hydrogen permeability of FeCrAl alloys leads to concerns with respect to potentially significant tritium release when used for fuel cladding in LWRs. Also, the total tritium inventory insidemore » the primary coolant of a light water reactor was quantified by applying a 1-dimensional steady state tritium diffusion model to demonstrate the dependence of tritium inventory on fuel cladding type. Furthermore, potential mitigation strategies for tritium release from FeCrAl fuel cladding were discussed and indicate the potential for application of an alumina layer on the inner clad surface to serve as a tritium barrier. More effort is required to develop a robust, economical mitigation strategy for tritium permeation in reactors using FeCrAl clad fuel assemblies.« less

Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sowers, A.T.; Christman, J.A.; Bremser, M.D.

1997-10-01

Cold cathode structures have been fabricated using AlN and graded AlGaN structures (deposited on n-type 6H-SiC) as the thin film emitting layer. The cathodes consist of an aluminum grid layer separated from the nitride layer by a SiO{sub 2} layer and etched to form arrays of either 1, 3, or 5 {mu}m holes through which the emitting nitride surface is exposed. After fabrication, a hydrogen plasma exposure was employed to activate the cathodes. Cathode devices with 5 {mu}m holes displayed emission for up to 30 min before failing. Maximum emission currents ranged from 10{endash}100 nA and required grid voltages rangingmore » from 20{endash}110 V. The grid currents were typically 1 to 10{sup 4} times the collector currents. {copyright} {ital 1997 American Institute of Physics.}« less

High-Quality Crystal Growth and Characteristics of AlGaN-Based Solar-Blind Distributed Bragg Reflectors with a Tri-layer Period Structure

PubMed Central

Chang, Jianjun; Chen, Dunjun; Yang, Lianhong; Liu, Yanli; Dong, Kexiu; Lu, Hai; Zhang, Rong; Zheng, Youdou

2016-01-01

To realize AlGaN-based solar-blind ultraviolet distributed Bragg reflectors (DBRs), a novel tri-layer AlGaN/AlInN/AlInGaN periodical structure that differs from the traditional periodically alternating layers of high- and low-refractive-index materials was proposed and grown on an Al0.5Ga0.5N template via metal-organic chemical vapour deposition. Because of the intentional design of the AlInGaN strain transition layer, a state-of-the-art DBR structure with atomic-level-flatness interfaces was achieved using an AlGaN template. The fabricated DBR exhibits a peak reflectivity of 86% at the centre wavelength of 274 nm and a stopband with a full-width at half-maximum of 16 nm. PMID:27381651

Investigation of semiconductor clad optical waveguides

NASA Technical Reports Server (NTRS)

Batchman, T. E.; Mcwright, G.

1981-01-01

The properties of semiconductor-clad optical waveguides based on glass substrates were investigated. Computer modeling studies on four-layer silicon-clad planar dielectric waveguides indicated that the attenuation and mode index should behave as exponentially damped sinusoids as the silicon thickness is decreased below one micrometer. This effect can be explained as a periodic coupling between the guided modes of the lossless structure and the lossy modes supported by the high refractive index silicon. The computer studies also show that both the attenuation and mode index of the propagating mode are significantly altered by conductivity charges in the silicon. Silicon claddings were RF sputtered onto AgNO3-NaNO3 ion exchanged waveguides and preliminary measurements of attenuation were made. An expression was developed which predicts the attenuation of the silicon clad waveguide from the attenuation and phase characteristics of a silicon waveguide. Several applications of these clad waveguides are suggested and methods for increasing the photo response of the RF sputtered silicon films are described.

Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite

NASA Astrophysics Data System (ADS)

Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Gan, Lin; Xu, Bingshe; Jiang, Haiwei

2018-04-01

The growth mechanism of GaN epitaxial layers on mechanically exfoliated graphite is explained in detail based on classic nucleation theory. The number of defects on the graphite surface can be increased via O-plasma treatment, leading to increased nucleation density on the graphite surface. The addition of elemental Al can effectively improve the nucleation rate, which can promote the formation of dense nucleation layers and the lateral growth of GaN epitaxial layers. The surface morphologies of the nucleation layers, annealed layers and epitaxial layers were characterized by field-emission scanning electron microscopy, where the evolution of the surface morphology coincided with a 3D-to-2D growth mechanism. High-resolution transmission electron microscopy was used to characterize the microstructure of GaN. Fast Fourier transform diffraction patterns showed that cubic phase (zinc-blend structure) GaN grains were obtained using conventional GaN nucleation layers, while the hexagonal phase (wurtzite structure) GaN films were formed using AlGaN nucleation layers. Our work opens new avenues for using highly oriented pyrolytic graphite as a substrate to fabricate transferable optoelectronic devices.

Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite.

PubMed

Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Gan, Lin; Xu, Bingshe; Jiang, Haiwei

2018-04-27

The growth mechanism of GaN epitaxial layers on mechanically exfoliated graphite is explained in detail based on classic nucleation theory. The number of defects on the graphite surface can be increased via O-plasma treatment, leading to increased nucleation density on the graphite surface. The addition of elemental Al can effectively improve the nucleation rate, which can promote the formation of dense nucleation layers and the lateral growth of GaN epitaxial layers. The surface morphologies of the nucleation layers, annealed layers and epitaxial layers were characterized by field-emission scanning electron microscopy, where the evolution of the surface morphology coincided with a 3D-to-2D growth mechanism. High-resolution transmission electron microscopy was used to characterize the microstructure of GaN. Fast Fourier transform diffraction patterns showed that cubic phase (zinc-blend structure) GaN grains were obtained using conventional GaN nucleation layers, while the hexagonal phase (wurtzite structure) GaN films were formed using AlGaN nucleation layers. Our work opens new avenues for using highly oriented pyrolytic graphite as a substrate to fabricate transferable optoelectronic devices.

Specific features of waveguide recombination in laser structures with asymmetric barrier layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Polubavkina, Yu. S., E-mail: polubavkina@mail.ru; Zubov, F. I.; Moiseev, E. I.

2017-02-15

The spatial distribution of the intensity of the emission caused by recombination appearing at a high injection level (up to 30 kA/cm{sup 2}) in the waveguide layer of a GaAs/AlGaAs laser structure with GaInP and AlGaInAs asymmetric barrier layers is studied by means of near-field scanning optical microscopy. It is found that the waveguide luminescence in such a laser, which is on the whole less intense as compared to that observed in a similar laser without asymmetric barriers, is non-uniformly distributed in the waveguide, so that the distribution maximum is shifted closer to the p-type cladding layer. This can bemore » attributed to the ability of the GaInP barrier adjoining the quantum well on the side of the n-type cladding layer to suppress the hole transport.« less

External Insulation of Masonry Walls and Wood Framed Walls

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baker, P.

2013-01-01

The use of exterior insulation on a building is an accepted and effective means to increase the overall thermal resistance of the assembly that also has other advantages of improved water management and often increased air tightness of building assemblies. For thin layers of insulation (1" to 1 1/2"), the cladding can typically be attached directly through the insulation back to the structure. For thicker insulation layers, furring strips have been added as a cladding attachment location. This approach has been used in the past on numerous Building America test homes and communities (both new and retrofit applications), and hasmore » been proven to be an effective and durable means to provide cladding attachment. However, the lack of engineering data has been a problem for many designers, contractors, and code officials. This research project developed baseline engineering analysis to support the installation of thick layers of exterior insulation on existing masonry and frame walls. Furthermore, water management details necessary to integrate windows, doors, decks, balconies and roofs were created to provide guidance on the integration of exterior insulation strategies with other enclosure elements.« less

External Insulation of Masonry Walls and Wood Framed Walls

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baker, P.

2013-01-01

The use of exterior insulation on a building is an accepted and effective means to increase the overall thermal resistance of the assembly that also has other advantages of improved water management and often increased air tightness of building assemblies. For thin layers of insulation (1” to 1 ½”), the cladding can typically be attached directly through the insulation back to the structure. For thicker insulation layers, furring strips have been added as a cladding attachment location. This approach has been used in the past on numerous Building America test homes and communities (both new and retrofit applications), and hasmore » been proven to be an effective and durable means to provide cladding attachment. However, the lack of engineering data has been a problem for many designers, contractors, and code officials. This research project developed baseline engineering analysis to support the installation of thick layers of exterior insulation on existing masonry and frame walls. Furthermore, water management details necessary to integrate windows, doors, decks, balconies and roofs were created to provide guidance on the integration of exterior insulation strategies with other enclosure elements.« less

Characterization of bulk traps and interface states in AlGaN/GaN heterostructure under proton irradiation

NASA Astrophysics Data System (ADS)

Zheng, Xue-Feng; Dong, Shuai-Shuai; Ji, Peng; Wang, Chong; He, Yun-Long; Lv, Ling; Ma, Xiao-Hua; Hao, Yue

2018-06-01

This paper provides a systematic study on the bulk traps and interface states in a typical AlGaN/GaN Schottky structure under proton irradiation. After 3 MeV proton irradiation with a dose of 5 × 1014 H+/cm2, a positive flat band voltage shift of 0.3 V is observed according to the capacitance-voltage (C-V) measurements. Based on this, the distribution of electrons across AlGaN and GaN layers is extracted. Associated with the numerical calculation, direct experimental evidences demonstrate that the bulk traps within the AlGaN layer dominate the carrier removal effect under proton irradiation. Furthermore, the effects of proton irradiation on AlGaN/GaN interface states were investigated by utilizing the frequency dependent conductance technique. The time constants are extracted, which increase from 1.10-2.53 μs to 3.46-37 μs after irradiation. Meanwhile, it shows that the density of interface states increases from 9.45 × 1011-1.70 × 1013 cm-2.eV-1 to 1.8 × 1012-1.8 × 1013 cm-2.eV-1 with an increase in trap activation energy from 0.34 eV-0.32 eV to 0.41 eV-0.35 eV after irradiation. The Coulomb scattering effect of electron trapping at interface states with deeper energy levels is utilized to explain the mobility degradation in this paper.

High power ultraviolet light emitting diodes based on GaN /AlGaN quantum wells produced by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Cabalu, J. S.; Bhattacharyya, A.; Thomidis, C.; Friel, I.; Moustakas, T. D.; Collins, C. J.; Komninou, Ph.

2006-11-01

In this paper, we report on the growth by molecular beam epitaxy and fabrication of high power nitride-based ultraviolet light emitting diodes emitting in the spectral range between 340 and 350nm. The devices were grown on (0001) sapphire substrates via plasma-assisted molecular beam epitaxy. The growth of the light emitting diode (LED) structures was preceded by detailed materials studies of the bottom n-AlGaN contact layer, as well as the GaN /AlGaN multiple quantum well (MQW) active region. Specifically, kinetic conditions were identified for the growth of the thick n-AlGaN films to be both smooth and to have fewer defects at the surface. Transmission-electron microscopy studies on identical GaN /AlGaN MQWs showed good quality and well-defined interfaces between wells and barriers. Large area mesa devices (800×800μm2) were fabricated and were designed for backside light extraction. The LEDs were flip-chip bonded onto a Si submount for better heat sinking. For devices emitting at 340nm, the measured differential on-series resistance is 3Ω with electroluminescence spectrum full width at half maximum of 18nm. The output power under dc bias saturates at 0.5mW, while under pulsed operation it saturates at approximately 700mA to a value of 3mW, suggesting that thermal heating limits the efficiency of these devices. The output power of the investigated devices was found to be equivalent with those produced by the metal-organic chemical vapor deposition and hydride vapor-phase epitaxy methods. The devices emitting at 350nm were investigated under dc operation and the output power saturates at 4.5mW under 200mA drive current.

Towards AlN optical cladding layers for thermal management in hybrid lasers

NASA Astrophysics Data System (ADS)

Mathews, Ian; Lei, Shenghui; Nolan, Kevin; Levaufre, Guillaume; Shen, Alexandre; Duan, Guang-Hua; Corbett, Brian; Enright, Ryan

2015-06-01

Aluminium Nitride (AlN) is proposed as a dual function optical cladding and thermal spreading layer for hybrid ridge lasers, replacing current benzocyclobutene (BCB) encapsulation. A high thermal conductivity material placed in intimate contact with the Multi-Quantum Well active region of the laser allows rapid heat removal at source but places a number of constraints on material selection. AlN is considered the most suitable due to its high thermal conductivity when deposited at low deposition temperatures, similar co-efficient of thermal expansion to InP, its suitable refractive index and its dielectric nature. We have previously simulated the possible reduction in the thermal resistance of a hybrid ridge laser by replacing the BCB cladding material with a material of higher thermal conductivity of up to 319 W/mK. Towards this goal, we demonstrate AlN thin-films deposited by reactive DC magnetron sputtering on InP.

AlGaN Channel Transistors for Power Management and Distribution

NASA Technical Reports Server (NTRS)

VanHove, James M.

1996-01-01

Contained within is the Final report of a Phase 1 SBIR program to develop AlGaN channel junction field effect transistors (JFET). The report summarizes our work to design, deposit, and fabricate JFETS using molecular beam epitaxy growth AlGaN. Nitride growth is described using a RF atomic nitrogen plasma source. Processing steps needed to fabricate the device such as ohmic source-drain contacts, reactive ion etching, gate formation, and air bride fabrication are documented. SEM photographs of fabricated power FETS are shown. Recommendations are made to continue the effort in a Phase 2 Program.

High-Temperature Tolerance in Multi-Scale Cermet Solar-Selective Absorbing Coatings Prepared by Laser Cladding.

PubMed

Pang, Xuming; Wei, Qian; Zhou, Jianxin; Ma, Huiyang

2018-06-19

In order to achieve cermet-based solar absorber coatings with long-term thermal stability at high temperatures, a novel single-layer, multi-scale TiC-Ni/Mo cermet coating was first prepared using laser cladding technology in atmosphere. The results show that the optical properties of the cermet coatings using laser cladding were much better than the preplaced coating. In addition, the thermal stability of the optical properties for the laser cladding coating were excellent after annealing at 650 °C for 200 h. The solar absorptance and thermal emittance of multi-scale cermet coating were 85% and 4.7% at 650 °C. The results show that multi-scale cermet materials are more suitable for solar-selective absorbing coating. In addition, laser cladding is a new technology that can be used for the preparation of spectrally-selective coatings.

Chemical Sensors Based on Optical Ring Resonators

NASA Technical Reports Server (NTRS)

Homer, Margie; Manfreda, Allison; Mansour, Kamjou; Lin, Ying; Ksendzov, Alexander

2005-01-01

Chemical sensors based on optical ring resonators are undergoing development. A ring resonator according to this concept is a closed-circuit dielectric optical waveguide. The outermost layer of this waveguide, analogous to the optical cladding layer on an optical fiber, is a made of a polymer that (1) has an index of refraction lower than that of the waveguide core and (2) absorbs chemicals from the surrounding air. The index of refraction of the polymer changes with the concentration of absorbed chemical( s). The resonator is designed to operate with relatively strong evanescent-wave coupling between the outer polymer layer and the electromagnetic field propagating along the waveguide core. By virtue of this coupling, the chemically induced change in index of refraction of the polymer causes a measurable shift in the resonance peaks of the ring. In a prototype that has been used to demonstrate the feasibility of this sensor concept, the ring resonator is a dielectric optical waveguide laid out along a closed path resembling a racetrack (see Figure 1). The prototype was fabricated on a silicon substrate by use of standard techniques of thermal oxidation, chemical vapor deposition, photolithography, etching, and spin coating. The prototype resonator waveguide features an inner cladding of SiO2, a core of SixNy, and a chemical-sensing outer cladding of ethyl cellulose. In addition to the ring Chemical sensors based on optical ring resonators are undergoing development. A ring resonator according to this concept is a closed-circuit dielectric optical waveguide. The outermost layer of this waveguide, analogous to the optical cladding layer on an optical fiber, is a made of a polymer that (1) has an index of refraction lower than that of the waveguide core and (2) absorbs chemicals from the surrounding air. The index of refraction of the polymer changes with the concentration of absorbed chemical( s). The resonator is designed to operate with relatively strong evanescent-wave coupling between the outer polymer layer and the electromagnetic field propagating along the waveguide core. By virtue of this coupling, the chemically induced change in index of refraction of the polymer causes a measurable shift in the resonance peaks of the ring. In a prototype that has been used to demonstrate the feasibility of this sensor concept, the ring resonator is a dielectric optical waveguide laid out along a closed path resembling a racetrack (see Figure 1). The prototype was fabricated on a silicon substrate by use of standard techniques of thermal oxidation, chemical vapor deposition, photolithography, etching, and spin coating. The prototype resonator waveguide features an inner cladding of SiO2, a core of SixNy, and a chemical-sensing outer cladding of ethyl cellulose. In addition to the ring res

Effects of design geometry on SU8 polymer waveguides

NASA Astrophysics Data System (ADS)

Holland, Anthony S.; Balkunje, Vishal S.; Mitchell, Arnan; Austin, Michael W.; Raghunathan, Mukund K.; Kostovski, Gorgi

2005-02-01

The spin-on photoresist SU8 from MicroChem has a relatively high refractive index (n=1.57 at 1550nm) compared with other polymers. It is stable and has high optical transmission at optical communication wavelengths. In this paper we study rib waveguides fabricated using SU8 as the core layer and thermoset polymers UV15 (n=1.50 at 1550nm) from Master Bond and NOA61 (n=1.54 at 1550nm) from Gentec as the cladding layers. The rib height is varied from 0.3 to 1.7μm high. This is part of the SU8 layer sandwiched between the cladding layers. The waveguides are tested to determine the effects of varying this geometry for single mode optical transmission. The lengths of the waveguides were 1.5 cm to 5 cm.

Structure and properties of steel case-hardened by non-vacuum electron-beam cladding of carbon fibers

NASA Astrophysics Data System (ADS)

Losinskaya, A. A.; Lozhkina, E. A.; Bardin, A. I.

2017-12-01

At the present time, the actual problem of materials science is the increase in the steels performance characteristics. In the paper some mechanical properties of the case-hardened materials received by non-vacuum electron-beam cladding of carbon fibers are determined. The depth of the hardened layers varies from 1.5 to 3 mm. The impact strength of the samples exceeds 50 J/cm2. The wear resistance of the coatings obtained exceeds the properties of steel 20 after cementation and quenching with low tempering. The results of a study of the microhardness of the resulting layers and the microstructure are also given. The hardness of the surface layers exceeds 5700 MPa.

The role of cleaning conditions and epitaxial layer structure on reliability of Sc 2O 3 and MgO passivation on AlGaN/GaN HEMTS

NASA Astrophysics Data System (ADS)

Luo, B.; Mehandru, R. M.; Kim, Jihyun; Ren, F.; Gila, B. P.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Fitch, R. C.; Gillespie, J.; Dellmer, R.; Jenkins, T.; Sewell, J.; Via, D.; Crespo, A.

2002-12-01

The effect of layer structure (GaN versus AlGaN cap) and cleaning procedure prior to Sc 2O 3 or MgO deposition at 100 °C were examined for their effects on the long-term bias-stress stability of AlGaN/GaN high electron mobility transistors (HEMTs). Surface cleaning by itself was not sufficient to prevent current collapse in the devices. The forward and reverse gate leakage currents were decreased under most conditions upon deposition of the oxide passivation layers. After ≈13 h of bias-stressing, the MgO-passivated HEMTs retain ⩾90% their initial drain-source current. The Sc 2O 3-passivated devices retained ˜80% recovery of the current under the same conditions.

Improving the Thermal Shock Resistance of Thermal Barrier Coatings Through Formation of an In Situ YSZ/Al2O3 Composite via Laser Cladding

NASA Astrophysics Data System (ADS)

Soleimanipour, Zohre; Baghshahi, Saeid; Shoja-razavi, Reza

2017-04-01

In the present study, laser cladding of alumina on the top surface of YSZ thermal barrier coatings (TBC) was conducted via Nd:YAG pulsed laser. The thermal shock behavior of the TBC before and after laser cladding was modified by heating at 1000 °C for 15 min and quenching in cold water. Phase analysis, microstructural evaluation and elemental analysis were performed using x-ray diffractometry, scanning electron microscopy (SEM), and energy-dispersive spectroscopy. The results of thermal shock tests indicated that the failure in the conventional YSZ (not laser clad) and the laser clad coatings happened after 200 and 270 cycles, respectively. The SEM images of the samples showed that delamination and spallation occurred in both coatings as the main mechanism of failure. Formation of TGO was also observed in the fractured cross section of the samples, which is also a main reason for degradation. Thermal shock resistance in the laser clad coatings improved about 35% after cladding. The improvement is due to the presence of continuous network cracks perpendicular to the surface in the clad layer and also the thermal stability and high melting point of alumina in Al2O3/ZrO2 composite.

Ceramic Coatings for Clad (The C 3 Project): Advanced Accident-Tolerant Ceramic Coatings for Zr-Alloy Cladding

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sickafus, Kurt E.; Wirth, Brian; Miller, Larry

The goal of this NEUP-IRP project is to develop a fuel concept based on an advanced ceramic coating for Zr-alloy cladding. The coated cladding must exhibit demonstrably improved performance compared to conventional Zr-alloy clad in the following respects: During normal service, the ceramic coating should decrease cladding oxidation and hydrogen pickup (the latter leads to hydriding and embrittlement). During a reactor transient (e.g., a loss of coolant accident), the ceramic coating must minimize or at least significantly delay oxidation of the Zr-alloy cladding, thus reducing the amount of hydrogen generated and the oxygen ingress into the cladding. The specific objectivesmore » of this project are as follows: To produce durable ceramic coatings on Zr-alloy clad using two possible routes: (i) MAX phase ceramic coatings or similar nitride or carbide coatings; and (ii) graded interface architecture (multilayer) ceramic coatings, using, for instance, an oxide such as yttria-stabilized zirconia (YSZ) as the outer protective layer. To characterize the structural and physical properties of the coated clad samples produced in 1. above, especially the corrosion properties under simulated normal and transient reactor operating conditions. To perform computational analyses to assess the effects of such coatings on fuel performance and reactor neutronics, and to perform fuel cycle analyses to assess the economic viability of modifying conventional Zr-alloy cladding with ceramic coatings. This project meets a number of the goals outlined in the NEUP-IRP call for proposals, including: Improve the fuel/cladding system through innovative designs (e.g. coatings/liners for zirconium-based cladding) Reduce or eliminate hydrogen generation Increase resistance to bulk steam oxidation Achievement of our goals and objectives, as defined above, will lead to safer light-water reactor (LWR) nuclear fuel assemblies, due to improved cladding properties and built-in accident resistance, as well as the possibilities for enhanced fuel/clad system performance and longevity.« less

Analysis of e-beam impact on the resist stack in e-beam lithography process

NASA Astrophysics Data System (ADS)

Indykeiwicz, K.; Paszkiewicz, B.

2013-07-01

Paper presents research on the sub-micron gate, AlGaN /GaN HEMT type transistors, fabrication by e-beam lithography and lift-off technique. The impact of the electron beam on the resists layer and the substrate was analyzed by MC method in Casino v3.2 software. The influence of technological process parameters on the metal structures resolution and quality for paths 100 nm, 300 nm and 500 nm wide and 20 μm long was studied. Qualitative simulation correspondences to the conducted experiments were obtained.

Wide-bandgap III-Nitride based Second Harmonic Generation

DTIC Science & Technology

2014-10-02

fabrication process for a GaN LPS. Fig. 1: 3-step Fabrication process of a GaN based lateral polar structure. ( a ) Growth of a 20 nm AlN buffer layer...etching of the LT-AlN stripes. This results are shown in Fig. 2 ( a ) and (b). Fig. 2: AFM images of KOH ( a ) and RIE (b) patterned templates for lateral ...was varied between 0.6 - 1.0. FIG. 3: Growth process of AlGaN based Lateral Polar Structures. ( a ) RIE patterning. (b) Growth of HT- AlN. (c

229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection

NASA Astrophysics Data System (ADS)

Liu, Dong; Cho, Sang June; Park, Jeongpil; Seo, Jung-Hun; Dalmau, Rafael; Zhao, Deyin; Kim, Kwangeun; Gong, Jiarui; Kim, Munho; Lee, In-Kyu; Albrecht, John D.; Zhou, Weidong; Moody, Baxter; Ma, Zhenqiang

2018-02-01

AlGaN based 229 nm light emitting diodes (LEDs), employing p-type Si to significantly increase hole injection, were fabricated on single crystal bulk aluminum nitride (AlN) substrates. Nitride heterostructures were epitaxially deposited by organometallic vapor phase epitaxy and inherit the low dislocation density of the native substrate. Following epitaxy, a p-Si layer is bonded to the heterostructure. LEDs were characterized both electrically and optically. Owing to the low defect density films, large concentration of holes from p-Si, and efficient hole injection, no efficiency droop was observed up to a current density of 76 A/cm2 under continuous wave operation and without external thermal management. An optical output power of 160 μW was obtained with the corresponding external quantum efficiency of 0.03%. This study demonstrates that by adopting p-type Si nanomembrane contacts as a hole injector, practical levels of hole injection can be realized in UV light-emitting diodes with very high Al composition AlGaN quantum wells, enabling emission wavelengths and power levels that were previously inaccessible using traditional p-i-n structures with poor hole injection efficiency.

First-principles study of alloying effects on fluorine incorporation in Al x Ga1-x N alloys

NASA Astrophysics Data System (ADS)

Wang, Rong; Tan, Wei; Zhang, Jian; Chen, Feng-Xiang; Wei, Su-Huai

2018-02-01

Incorporation of fluorine (F) into the AlGaN layer is crucial to the fabrication of enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs). However, the understanding of properties of F doping in AlGaN alloys is rather limited. Using first-principles calculations and the special quasirandom structure (SQS) approach, we investigate the alloying effects on the doping properties of F-incorporated Al x Ga1-x N alloys. We find that substitutional F on N sites (FN) and interstitial F (Fi) are dominant defects for F in Al x Ga1-x N alloys. For these two types of defects, both the global composition x and the local motif surrounding the dopant play important roles. On contrary, the incorporation of substitutional F on Ga sites (FGa) or Al sites (FAl) are affected only by the composition x. We also find that there exists a large asymmetric bowing for the effective formation energies of FN and Fi. These results are explained in terms of local structural distortion and electronic effects. The mechanism discussed in this paper can also be used in understanding doping in other semiconductor alloys.

Enhanced light extraction in tunnel junction-enabled top emitting UV LEDs

DOE PAGES

Zhang, Yuewei; Allerman, Andrew A.; Krishnamoorthy, Sriram; ...

2016-04-11

The efficiency of ultra violet LEDs has been critically limited by the absorption losses in p-type and metal layers. In this work, surface roughening based light extraction structures are combined with tunneling based p-contacts to realize highly efficient top-side light extraction efficiency in UV LEDs. Surface roughening of the top n-type AlGaN contact layer is demonstrated using self-assembled Ni nano-clusters as etch mask. The top surface roughened LEDs were found to enhance external quantum efficiency by over 40% for UV LEDs with a peak emission wavelength of 326 nm. The method described here can enable highly efficient UV LEDs withoutmore » the need for complex manufacturing methods such as flip chip bonding.« less

Effect of CeO2 and Y2O3 on microstructure, bioactivity and degradability of laser cladding CaO-SiO2 coating on titanium alloy.

PubMed

Li, H C; Wang, D G; Chen, C Z; Weng, F

2015-03-01

To solve the lack of strength of bulk biomaterials for load-bearing applications and improve the bioactivity of titanium alloy (Ti-6Al-4V), CaO-SiO2 coatings on titanium alloy were fabricated by laser cladding technique. The effect of CeO2 and Y2O3 on microstructure and properties of laser cladding coating was analyzed. The cross-section microstructure of ceramic layer from top to bottom gradually changes from cellular-dendrite structure to compact cellular crystal. The addition of CeO2 or Y2O3 refines the microstructure of the ceramic layer in the upper and middle regions. The refining effect on the grain is related to the kinds of additives and their content. The coating is mainly composed of CaTiO3, CaO, α-Ca2(SiO4), SiO2 and TiO2. Y2O3 inhibits the formation of CaO. After soaking in simulated body fluid (SBF), the calcium phosphate layer is formed on the coating surface, indicating the coating has bioactivity. After soaking in Tris-HCl solution, the samples doped with CeO2 or Y2O3 present a lower weight loss, indicating the addition of CeO2 or Y2O3 improves the degradability of laser cladding sample. Copyright © 2015 Elsevier B.V. All rights reserved.

Influence of laser cladding regimes on structural features and mechanical properties of coatings on titanium substrates

NASA Astrophysics Data System (ADS)

Malyutina, Yulia N.; Lazurenko, Daria V.; Bataev, Ivan A.; Movtchan, Igor A.

2015-10-01

In this paper an influence of the tantalum content on the structure and properties of surface layers of the titanium alloy doped using a laser treatment technology was investigated. It was found that an increase of a quantity of filler powder per one millimeter of a track length contributed to a rise of the content of undissolved particles in coatings. The maximum thickness of a cladded layer was reached at the mass of powder per the length unit equaled to 5.5 g/cm. Coatings were characterized by the formation of a dendrite structure with attributes of segregation. The width of a quenched fusion zone grew with an increase in the rate of powder feed to the treated area. Significant strengthening of the titanium surface layer alloyed with tantalum was not observed; however, the presence of undissolved tantalum particles can decrease the hardness of titanium surface layers.

Optimized Wavelength-Tuned Nonlinear Frequency Conversion Using a Liquid Crystal Clad Waveguide

NASA Technical Reports Server (NTRS)

Stephen, Mark A. (Inventor)

2018-01-01

An optimized wavelength-tuned nonlinear frequency conversion process using a liquid crystal clad waveguide. The process includes implanting ions on a top surface of a lithium niobate crystal to form an ion implanted lithium niobate layer. The process also includes utilizing a tunable refractive index of a liquid crystal to rapidly change an effective index of the lithium niobate crystal.

Process of welding gamma prime-strengthened nickel-base superalloys

DOEpatents

Speigel, Lyle B.; White, Raymond Alan; Murphy, John Thomas; Nowak, Daniel Anthony

2003-11-25

A process for welding superalloys, and particularly articles formed of gamma prime-strengthened nickel-base superalloys whose chemistries and/or microstructures differ. The process entails forming the faying surface of at least one of the articles to have a cladding layer of a filler material. The filler material may have a composition that is different from both of the articles, or the same as one of the articles. The cladding layer is machined to promote mating of the faying surfaces, after which the faying surfaces are mated and the articles welded together. After cooling, the welded assembly is free of thermally-induced cracks.

Three-State Quantum Dot Gate FETs Using ZnS-ZnMgS Lattice-Matched Gate Insulator on Silicon

NASA Astrophysics Data System (ADS)

Karmakar, Supriya; Suarez, Ernesto; Jain, Faquir C.

2011-08-01

This paper presents the three-state behavior of quantum dot gate field-effect transistors (FETs). GeO x -cladded Ge quantum dots (QDs) are site-specifically self-assembled over lattice-matched ZnS-ZnMgS high- κ gate insulator layers grown by metalorganic chemical vapor deposition (MOCVD) on silicon substrates. A model of three-state behavior manifested in the transfer characteristics due to the quantum dot gate is also presented. The model is based on the transfer of carriers from the inversion channel to two layers of cladded GeO x -Ge quantum dots.

Metal Matrix Composite Material by Direct Metal Deposition

NASA Astrophysics Data System (ADS)

Novichenko, D.; Marants, A.; Thivillon, L.; Bertrand, P. H.; Smurov, I.

Direct Metal Deposition (DMD) is a laser cladding process for producing a protective coating on the surface of a metallic part or manufacturing layer-by-layer parts in a single-step process. The objective of this work is to demonstrate the possibility to create carbide-reinforced metal matrix composite objects. Powders of steel 16NCD13 with different volume contents of titanium carbide are tested. On the base of statistical analysis, a laser cladding processing map is constructed. Relationships between the different content of titanium carbide in a powder mixture and the material microstructure are found. Mechanism of formation of various precipitated titanium carbides is investigated.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ballinger, Ronald G

A material that resists lead-bismuth eutectic (LBE) attack and retains its strength at 700°C would be an enabling technology for LBE-cooled reactors. No single alloy currently exists that can economically meet the required performance criteria of high strength and corrosion resistance. A Functionally Graded Composite (FGC) was developed with layers engineered to perform these functions. F91 was chosen as the structural layer of the composite for its strength and radiation resistance. Fe-12Cr-2Si, an alloy developed from previous work in the Fe-Cr-Si system, was chosen as the corrosion-resistant cladding layer because of its chemical similarity to F91 and its superior corrosionmore » resistance in both oxidizing and reducing environments. Fe-12Cr-2Si experienced minimal corrosion due to its self-passivation in oxidizing and reducing environments. Extrapolated corrosion rates are below one micron per year at 700ï°C. Corrosion of F91 was faster, but predictable and manageable. Diffusion studies showed that 17 microns of the cladding layer will be diffusionally diluted during the three year life of fuel cladding. 33 microns must be accounted for during the sixty year life of coolant piping. 5 cm coolant piping and 6.35 mm fuel cladding preforms were produced on a commercial scale by weld-overlaying Fe-12Cr-2Si onto F91 billets and co-extruding them. An ASME certified weld was performed followed by the prescribed quench-and-tempering heat treatment for F91. A minimal heat affected zone was observed, demonstrating field weldability. Finally, corrosion tests were performed on the fabricated FGC at 700ï°C after completely breaching the cladding in a small area to induce galvanic corrosion at the interface. None was observed. This FGC has significant impacts on LBE reactor design. The increases in outlet temperature and coolant velocity allow a large increase in power density, leading to either a smaller core for the same power rating or more power output for the same size core. This FGC represents an enabling technology for LBE cooled fast reactors.« less

AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hodges, C., E-mail: chris.hodges@bristol.ac.uk; Anaya Calvo, J.; Kuball, M.

2013-11-11

AlGaN/GaN heterostructure field effect transistors with a 150 nm thick GaN channel within stacked Al{sub x}Ga{sub 1−x}N layers were investigated using Raman thermography. By fitting a thermal simulation to the measured temperatures, the thermal conductivity of the GaN channel was determined to be 60 W m{sup −1} K{sup −1}, over 50% less than typical GaN epilayers, causing an increased peak channel temperature. This agrees with a nanoscale model. A low thermal conductivity AlGaN buffer means the GaN spreads heat; its properties are important for device thermal characteristics. When designing power devices with thin GaN layers, as well as electrical considerations, the reducedmore » channel thermal conductivity must be considered.« less

Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

DOE PAGES

Ahn, Shihyun; Zhu, Weidi; Dong, Chen; ...

2015-04-21

Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 10 9 and 5 × 10 8 cm ₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, theremore » was no dispersion observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.« less

On the formation features, microstructure and microhardness of single laser tracks formed by laser cladding of a NiCrBSi self-fluxing alloy

NASA Astrophysics Data System (ADS)

Devojno, O. G.; Feldshtein, E.; Kardapolava, M. A.; Lutsko, N. I.

2018-07-01

In the present paper, the influence of laser cladding conditions on the powder flow conditions, as well as the microstructure, phases and microhardness of an Ni-based self-fluxing alloy coating are described. The optimal granulations of a self-fluxing alloy powder and the relationship between the flow of powder of various fractions and the flow rate and pressure of the transporting gas have been determined. The laser beam speed, track pitch and the distance from the nozzle to the coated surface influence the height and width of single tracks. Regularities in the formation of microstructure under different cladding conditions are defined, as well as regularity of distribution of elements over the track depth and in the transient zone. The patterns of microhardness distribution over the track depth for different cladding conditions are found. These patterns as well as the optimal laser spot pitch allowed obtaining a uniform cladding layer.

Characterization of Brazed Joints of C-C Composite to Cu-clad-Molybdenum

NASA Technical Reports Server (NTRS)

Singh, M.; Asthana, R.

2008-01-01

Carbon-carbon composites with either pitch+CVI matrix or resin-derived matrix were joined to copper-clad molybdenum using two active braze alloys, Cusil-ABA (1.75% Ti) and Ticusil (4.5% Ti). The brazed joints revealed good interfacial bonding, preferential precipitation of Ti at the composite/braze interface, and a tendency toward de-lamination in resin-derived C-C composite due to its low inter-laminar shear strength. Extensive braze penetration of the inter-fiber channels in the pitch+CVI C-C composites was observed. The relatively low brazing temperatures (<950 C) precluded melting of the clad layer and restricted the redistribution of alloying elements but led to metallurgically sound composite joints. The Knoop microhardness (HK) distribution across the joint interfaces revealed sharp gradients at the Cu-clad-Mo/braze interface and higher hardness in Ticusil (approx.85-250 HK) than in Cusil-ABA (approx.50-150 HK). These C-C/Cu-clad-Mo joints with relatively low thermal resistance may be promising for thermal management applications.

Behavior of an improved Zr fuel cladding with oxidation resistant coating under loss-of-coolant accident conditions

NASA Astrophysics Data System (ADS)

Park, Dong Jun; Kim, Hyun Gil; Jung, Yang Il; Park, Jung Hwan; Yang, Jae Ho; Koo, Yang Hyun

2016-12-01

This study investigates protective coatings for improving the high temperature oxidation resistance of Zr fuel claddings for light water nuclear reactors. FeCrAl alloy and Cr layers were deposited onto Zr plates and tubes using cold spraying. For the FeCrAl/Zr system, a Mo layer was introduced between the FeCrAl coating and the Zr matrix to prevent inter-diffusion at high temperatures. Both the FeCrAl and Cr coatings improved the oxidation resistance compared to that of the uncoated Zr alloy when exposed to a steam environment at 1200 °C. The ballooning behavior and mechanical properties of the coated cladding samples were studied under simulated loss-of-coolant accident conditions. The coated samples showed higher burst temperatures, lower circumferential strain, and smaller rupture openings compared to the uncoated Zr. Although 4-point bend tests of the coated samples showed a small increase in the maximum load, ring compression tests of a sectioned sample showed increased ductility.

Bias Selectable Dual Band AlGaN Ultra-violet Detectors

NASA Technical Reports Server (NTRS)

Yan, Feng; Miko, Laddawan; Franz, David; Guan, Bing; Stahle, Carl M.

2007-01-01

Bias selectable dual band AlGaN ultra-violet (UV) detectors, which can separate UV-A and UV-B using one detector in the same pixel by bias switching, have been designed, fabricated and characterized. A two-terminal n-p-n photo-transistor-like structure was used. When a forward bias is applied between the top electrode and the bottom electrode, the detectors can successfully detect W-A and reject UV-B. Under reverse bias, they can detect UV-B and reject UV-A. The proof of concept design shows that it is feasible to fabricate high performance dual-band UV detectors based on the current AlGaN material growth and fabrication technologies.

Lasing and Longitudinal Cavity Modes in Photo-Pumped Deep Ultraviolet AlGaN Heterostructures

DTIC Science & Technology

2013-04-29

of the structures were intentionally doped. The AlGaN composition was determined by triple -axis high-resolution X-ray diffraction measurements. Cross...threshold can be achieved on single crystal AlN substrates. This achievement serves as a starting point towards realizing electrically pumped sub-300 nm UV

Electron microscopy characterization of AlGaN/GaN heterostructures grown on Si (111) substrates

NASA Astrophysics Data System (ADS)

Gkanatsiou, A.; Lioutas, Ch. B.; Frangis, N.; Polychroniadis, E. K.; Prystawko, P.; Leszczynski, M.

2017-03-01

AlGaN/GaN buffer heterostructures were grown on "on axis" and 4 deg off Si (111) substrates by MOVPE. The electron microscopy study reveals the very good epitaxial growth of the layers. Almost c-plane orientated nucleation grains are achieved after full AlN layer growth. Step-graded AlGaN layers were introduced, in order to prevent the stress relaxation and to work as a dislocation filter. Thus, a crack-free smooth surface of the final GaN epitaxial layer is achieved in both cases, making the buffer structure ideal for the forthcoming growth of the heterostructure (used for HEMT device applications). Finally, the growth of the AlGaN/GaN heterostructure on top presents characteristic and periodic undulations (V-pits) on the surface, due to strain relaxation reasons. The AlN interlayer grown in between the heterostructure demonstrates an almost homogeneous thickness, probably reinforcing the 2DEG electrical characteristics.

High-Temperature Growth of GaN and Al x Ga1- x N via Ammonia-Based Metalorganic Molecular-Beam Epitaxy

NASA Astrophysics Data System (ADS)

Billingsley, Daniel; Henderson, Walter; Doolittle, W. Alan

2010-05-01

The effect of high-temperature growth on the crystalline quality and surface morphology of GaN and Al x Ga1- x N grown by ammonia-based metalorganic molecular-beam epitaxy (NH3-MOMBE) has been investigated as a means of producing atomically smooth films suitable for device structures. The effects of V/III ratio on the growth rate and surface morphology are described herein. The crystalline quality of both GaN and AlGaN was found to mimic that of the GaN templates, with (002) x-ray diffraction (XRD) full-widths at half- maximum (FWHMs) of ~350 arcsec. Nitrogen-rich growth conditions have been found to provide optimal surface morphologies with a root-mean-square (RMS) roughness of ~0.8 nm, yet excessive N-rich environments have been found to reduce the growth rate and result in the formation of faceted surface pitting. AlGaN exhibits a decreased growth rate, as compared with GaN, due to increased N recombination as a result of the increased pyrolysis of NH3 in the presence of Al. AlGaN films grown directly on GaN templates exhibited Pendellösung x-ray fringes, indicating an abrupt interface and a planar AlGaN film. AlGaN films grown for this study resulted in an optimal RMS roughness of ~0.85 nm with visible atomic steps.

High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reddy, Pramod; Washiyama, Shun; Kaess, Felix

2016-04-14

In this work, we employed X-ray photoelectron spectroscopy to determine the band offsets and interface Fermi level at the heterojunction formed by stoichiometric silicon nitride deposited on Al{sub x}Ga{sub 1-x}N (of varying Al composition “x”) via low pressure chemical vapor deposition. Silicon nitride is found to form a type II staggered band alignment with AlGaN for all Al compositions (0 ≤ x ≤ 1) and present an electron barrier into AlGaN even at higher Al compositions, where E{sub g}(AlGaN) > E{sub g}(Si{sub 3}N{sub 4}). Further, no band bending is observed in AlGaN for x ≤ 0.6 and a reduced band bending (by ∼1 eV in comparison to that atmore » free surface) is observed for x > 0.6. The Fermi level in silicon nitride is found to be at 3 eV with respect to its valence band, which is likely due to silicon (≡Si{sup 0/−1}) dangling bonds. The presence of band bending for x > 0.6 is seen as a likely consequence of Fermi level alignment at Si{sub 3}N{sub 4}/AlGaN hetero-interface and not due to interface states. Photoelectron spectroscopy results are corroborated by current-voltage-temperature and capacitance-voltage measurements. A shift in the interface Fermi level (before band bending at equilibrium) from the conduction band in Si{sub 3}N{sub 4}/n-GaN to the valence band in Si{sub 3}N{sub 4}/p-GaN is observed, which strongly indicates a reduction in mid-gap interface states. Hence, stoichiometric silicon nitride is found to be a feasible passivation and dielectric insulation material for AlGaN at any composition.« less

Processing for Highly Efficient AlGaN/GaN Emitters

DTIC Science & Technology

2009-09-09

effects of SiCl4 plasma treatment and subsequent cleaning in BOE, HCl, and NH4OH solutions on n-GaN and n- AlGaN surfaces using XPS and AES. The...was the as-grown GaN layer without any surface treatment while sample 2 was treated with SiCl4 plasma in a reactive ion etching (RIE) system with a...plasma self-bias voltage of −300 V for 60 s. Samples 3, 4, and 5 were treated with SiCl4 plasma and followed by a 2-min dip in NH4OH, HCl, and BOE

Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Jie, E-mail: jie.yang@yale.edu; Cui, Sharon; Ma, T. P.

2013-11-25

We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5 eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

Through-thickness recrystallization characteristics of a laminated AA3xxx–AA6xxx aluminum alloy system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liao, L.H., E-mail: l2liao@uwaterloo.ca; Jin, H.; Gallerneault, M.

2015-03-15

The through-thickness annealing behavior of a laminated AA3xxx–AA6xxx alloy system at 300 °C has been studied by scanning electron microscopy, electron backscatter diffraction analysis, electron probe micro-analysis, differential scanning calorimetry, and hardness measurement. Results show that the recrystallization process starts at the interface region between the AA3xxx (clad) and AA6xxx (core) layers. Subsequently, the recrystallization process front progresses into the core layer, while the clad layer is the last region to recrystallize. It is also found that precipitation precedes recrystallization in the entire laminate at the investigated temperature. The preferential onset of recrystallization at the interface region is attributed tomore » the net driving pressure being the highest in this region. The factors that lead to such enhanced net driving pressure are (a) deformation incompatibility between the two alloy layers, (b) lower solute content of the interface, which also leads to lower volume fraction of precipitates, and (c) an accelerated rate of precipitate coarsening due to the presence of a higher density of dislocations. The gradual progress of recrystallization from the interface towards the core layer is dictated by precipitate coarsening and the dependence of its rate on the density of deformation-induced dislocations. The lower driving pressure due to lower work hardening capacity, high solute drag pressure due to Mn, and additional Zener drag from precipitates that form due to solute redistribution during annealing explain the late initiation of recrystallization in the clad layer. - Highlights: • The through-thickness recrystallization of a laminated system is investigated. • The early onset of recrystallization at the interface is discussed. • The effects of precipitation and coarsening on recrystallization are analyzed.« less

Graphene-clad tapered fiber: effective nonlinearity and propagation losses.

PubMed

Gorbach, A V; Marini, A; Skryabin, D V

2013-12-15

We derive a pulse propagation equation for a graphene-clad optical fiber, treating the optical response of the graphene and nonlinearity of the dielectric fiber core as perturbations in asymptotic expansion of Maxwell equations. We analyze the effective nonlinear and attenuation coefficients due to the graphene layer. Based on the recent experimental measurements of the nonlinear graphene conductivity, we predict considerable enhancement of the effective nonlinearity for subwavelength fiber core diameters.

Clad metals, roll bonding and their applications for SOFC interconnects

NASA Astrophysics Data System (ADS)

Chen, Lichun; Yang, Zhenguo; Jha, Bijendra; Xia, Guanguang; Stevenson, Jeffry W.

Metallic interconnects have been becoming an increasingly interesting topic in the development in intermediate temperature solid oxide fuel cells (SOFC). High temperature oxidation resistant alloys are currently considered as candidate materials. Among these alloys however, different groups of alloys demonstrate different advantages and disadvantages, and few if any can completely satisfy the stringent requirements for the application. To integrate the advantages and avoid the disadvantages of different groups of alloys, clad metal has been proposed for SOFC interconnect applications and interconnect structures. This paper gives a brief overview of the cladding approach and its applications, and discuss the viability of this technology to fabricate the metallic layered-structure interconnects. To examine the feasibility of this approach, the austenitic Ni-base alloy Haynes 230 and the ferritic stainless steel AL 453 were selected as examples and manufactured into a clad metal. Its suitability as an interconnect construction material was investigated.

Investigation of Zircaloy-2 oxidation model for SFP accident analysis

NASA Astrophysics Data System (ADS)

Nemoto, Yoshiyuki; Kaji, Yoshiyuki; Ogawa, Chihiro; Kondo, Keietsu; Nakashima, Kazuo; Kanazawa, Toru; Tojo, Masayuki

2017-05-01

The authors previously conducted thermogravimetric analyses on Zircaloy-2 in air. By using the thermogravimetric data, an oxidation model was constructed in this study so that it can be applied for the modeling of cladding degradation in spent fuel pool (SFP) severe accident condition. For its validation, oxidation tests of long cladding tube were conducted, and computational fluid dynamics analyses using the constructed oxidation model were proceeded to simulate the experiments. In the oxidation tests, high temperature thermal gradient along the cladding axis was applied and air flow rates in testing chamber were controlled to simulate hypothetical SFP accidents. The analytical outputs successfully reproduced the growth of oxide film and porous oxide layer on the claddings in oxidation tests, and validity of the oxidation model was proved. Influence of air flow rate for the oxidation behavior was thought negligible in the conditions investigated in this study.

Reversible switching of quantum cascade laser-modes using a pH-responsive polymeric cladding as transducer.

PubMed

Basnar, Bernhard; Schartner, Stephan; Austerer, Maximilian; Andrews, Aaron Maxwell; Roch, Tomas; Schrenk, Werner; Strasser, Gottfried

2008-06-09

We present a novel approach for the reversible switching of the emission wavelength of a quantum cascade laser (QCL) using a halochromic cladding. An air-waveguide laser ridge is coated with a thin layer of polyacrylic acid. This cladding introduces losses corresponding to the absorption spectrum of the polymer. By changing the state of the polymer, the absorption spectrum and losses change, inducing a shift of 7 cm(-1) in the emission wavelength. This change is induced by exposure to acidic or alkaline vapors under ambient conditions and is fully reversible. Such lasers can be used as multi-color light source and as sensor for atmospheric pH.

Oxidation of SUS-316 stainless steel for fast breeder reactor fuel cladding under oxygen pressure controlled by Ni/NiO oxygen buffer

NASA Astrophysics Data System (ADS)

Saito, Minoru; Furuya, Hirotaka; Sugisaki, Masayasu

1985-09-01

Oxidation of SUS-316 stainless steel for a fast breeder reactor fuel cladding was examined in the temperature range of 843-1010 K under the oxygen pressure of 1017 t - 10 t-13 Pa hy use of an experimental technique of a Ni/NiO oxygen buffer. The formation of the duplex oxide layer, i.e. an outer Fe 3O 4 layer and an inner (Fe, Cr, Ni)-spinel layer, was observed and the oxidation kinetics was found to obey the parabolic rate law. The oxygen pressure and temperature dependence of the parabolic rate constant kp( PO2, T) was determined as follows: kp( PO2, T)/ kg2 · m-1 · s-1 = 0.170( PO2/ Pa) 0.141exp[-114 × 10 3/( RT/ J)]. On the basis of the oxidation kinetics and the metallographic information, the outward diffusion of Fe in the outer oxide layer was assigned to be the rate-determining process.

Influence of laser cladding regimes on structural features and mechanical properties of coatings on titanium substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Malyutina, Yulia N., E-mail: iuliiamaliutina@gmail.ru; Lazurenko, Daria V., E-mail: pavlyukova-87@mail.ru; Bataev, Ivan A., E-mail: ivanbataev@ngs.ru

2015-10-27

In this paper an influence of the tantalum content on the structure and properties of surface layers of the titanium alloy doped using a laser treatment technology was investigated. It was found that an increase of a quantity of filler powder per one millimeter of a track length contributed to a rise of the content of undissolved particles in coatings. The maximum thickness of a cladded layer was reached at the mass of powder per the length unit equaled to 5.5 g/cm. Coatings were characterized by the formation of a dendrite structure with attributes of segregation. The width of a quenchedmore » fusion zone grew with an increase in the rate of powder feed to the treated area. Significant strengthening of the titanium surface layer alloyed with tantalum was not observed; however, the presence of undissolved tantalum particles can decrease the hardness of titanium surface layers.« less

Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih

Here, we discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that the capacitance-voltage measurements can be used to estimate the compensation and doping in the p-AlGaN layers located between the multi-quantum well region and the tunnel junction layer. By increasing the p-type doping concentration to overcome the background compensation, on-wafer external quantum efficiency and wall-plug efficiency of 3.37% and 1.62%, respectively, were achieved for the tunnel-injected UV LEDs emitting at 325 nm. We also show that interband tunneling hole injection can be usedmore » to realize UV LEDs without any acceptor doping. The work discussed here provides new understanding of hole doping and transport in AlGaN-based UV LEDs and demonstrates the excellent performance of tunnel-injected LEDs for the UV-A wavelength range.« less

Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes

DOE PAGES

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; ...

2016-11-09

Here, we discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that the capacitance-voltage measurements can be used to estimate the compensation and doping in the p-AlGaN layers located between the multi-quantum well region and the tunnel junction layer. By increasing the p-type doping concentration to overcome the background compensation, on-wafer external quantum efficiency and wall-plug efficiency of 3.37% and 1.62%, respectively, were achieved for the tunnel-injected UV LEDs emitting at 325 nm. We also show that interband tunneling hole injection can be usedmore » to realize UV LEDs without any acceptor doping. The work discussed here provides new understanding of hole doping and transport in AlGaN-based UV LEDs and demonstrates the excellent performance of tunnel-injected LEDs for the UV-A wavelength range.« less

Heavy Mg-doping of (Al,Ga)N films for potential applications in deep ultraviolet light-emitting structures

NASA Astrophysics Data System (ADS)

Liang, Y. H.; Towe, E.

2018-03-01

Doping of high aluminum-containing (Al,Ga)N thin films has remained a challenging problem that has hindered progress in the development of deep ultraviolet light-emitters. This paper reports on the synthesis and use of heavily doped (Al,Ga)N films in deep ultraviolet (˜274 nm) light-emitting structures; these structures were synthesized by molecular beam epitaxy under liquid-metal growth conditions that facilitate the incorporation of extremely high density of Mg dopant impurities (up to 5 × 1019 cm-3) into aluminum-rich (Al,Ga)N thin films. Prototypical light-emitting diode structures incorporating Al0.7Ga0.3N films doped with Mg impurities that ionize to give free hole carrier concentrations of up to 6 × 1017 cm-3 exhibit external quantum efficiencies of up 0.56%; this is an improvement from previous devices made from molecular beam epitaxy-grown materials. This improvement is believed to be due to the high hole carrier concentration enabled by the relatively low activation energy of 220 meV compared to the expected values of 408-507 meV for Al0.7Ga0.3N films.

Polariton Bose–Einstein condensate at room temperature in an Al(Ga)N nanowire–dielectric microcavity with a spatial potential trap

PubMed Central

Das, Ayan; Bhattacharya, Pallab; Heo, Junseok; Banerjee, Animesh; Guo, Wei

2013-01-01

A spatial potential trap is formed in a 6.0-μm Al(Ga)N nanowire by varying the Al composition along its length during epitaxial growth. The polariton emission characteristics of a dielectric microcavity with the single nanowire embedded in-plane have been studied at room temperature. Excitation is provided at the Al(Ga)N end of the nanowire, and polariton emission is observed from the lowest bandgap GaN region within the potential trap. Comparison of the results with those measured in an identical microcavity with a uniform GaN nanowire and having an identical exciton–photon detuning suggests evaporative cooling of the polaritons as they are transported into the trap in the Al(Ga)N nanowire. Measurement of the spectral characteristics of the polariton emission, their momentum distribution, first-order spatial coherence, and time-resolved measurements of polariton cooling provides strong evidence of the formation of a near-equilibrium Bose–Einstein condensate in the GaN region of the nanowire at room temperature. In contrast, the condensate formed in the uniform GaN nanowire–dielectric microcavity without the spatial potential trap is only in self-equilibrium. PMID:23382183

Enzymatic glucose detection using ZnO nanorods on the gate region of AlGaN /GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Kang, B. S.; Wang, H. T.; Ren, F.; Pearton, S. J.; Morey, T. E.; Dennis, D. M.; Johnson, J. W.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.

2007-12-01

ZnO nanorod-gated AlGaN /GaN high electron mobility transistors (HEMTs) are demonstrated for the detection of glucose. A ZnO nanorod array was selectively grown on the gate area using low temperature hydrothermal decomposition to immobilize glucose oxidase (GOx). The one-dimensional ZnO nanorods provide a large effective surface area with high surface-to-volume ratio and provide a favorable environment for the immobilization of GOx. The AlGaN /GaN HEMT drain-source current showed a rapid response of less than 5s when target glucose in a buffer with a pH value of 7.4 was added to the GOx immobilized on the ZnO nanorod surface. We could detect a wide range of concentrations from 0.5nMto125μM. The sensor exhibited a linear range from 0.5nMto14.5μM and an experiment limit of detection of 0.5nM. This demonstrates the possibility of using AlGaN /GaN HEMTs for noninvasive exhaled breath condensate based glucose detection of diabetic application.

Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources

PubMed Central

Zhao, S.; Connie, A. T.; Dastjerdi, M. H. T.; Kong, X. H.; Wang, Q.; Djavid, M.; Sadaf, S.; Liu, X. D.; Shih, I.; Guo, H.; Mi, Z.

2015-01-01

Despite broad interest in aluminum gallium nitride (AlGaN) optoelectronic devices for deep ultraviolet (DUV) applications, the performance of conventional Al(Ga)N planar devices drastically decays when approaching the AlN end, including low internal quantum efficiencies (IQEs) and high device operation voltages. Here we show that these challenges can be addressed by utilizing nitrogen (N) polar Al(Ga)N nanowires grown directly on Si substrate. By carefully tuning the synthesis conditions, a record IQE of 80% can be realized with N-polar AlN nanowires, which is nearly ten times higher compared to high quality planar AlN. The first 210 nm emitting AlN nanowire light emitting diodes (LEDs) were achieved, with a turn on voltage of about 6 V, which is significantly lower than the commonly observed 20 – 40 V. This can be ascribed to both efficient Mg doping by controlling the nanowire growth rate and N-polarity induced internal electrical field that favors hole injection. In the end, high performance N-polar AlGaN nanowire LEDs with emission wavelengths covering the UV-B/C bands were also demonstrated. PMID:25684335

An AlGaN Core-Shell Tunnel Junction Nanowire Light-Emitting Diode Operating in the Ultraviolet-C Band.

PubMed

Sadaf, S M; Zhao, S; Wu, Y; Ra, Y-H; Liu, X; Vanka, S; Mi, Z

2017-02-08

To date, semiconductor light emitting diodes (LEDs) operating in the deep ultraviolet (UV) spectral range exhibit very low efficiency due to the presence of large densities of defects and extremely inefficient p-type conduction of conventional AlGaN quantum well heterostructures. We have demonstrated that such critical issues can be potentially addressed by using nearly defect-free AlGaN tunnel junction core-shell nanowire heterostructures. The core-shell nanowire arrays exhibit high photoluminescence efficiency (∼80%) in the UV-C band at room temperature. With the incorporation of an epitaxial Al tunnel junction, the p-(Al)GaN contact-free nanowire deep UV LEDs showed nearly one order of magnitude reduction in the device resistance, compared to the conventional nanowire p-i-n device. The unpackaged Al tunnel junction deep UV LEDs exhibit an output power >8 mW and a peak external quantum efficiency ∼0.4%, which are nearly one to two orders of magnitude higher than previously reported AlGaN nanowire devices. Detailed studies further suggest that the maximum achievable efficiency is limited by electron overflow and poor light extraction efficiency due to the TM polarized emission.

Analysis of 2D Transport and Performance Characteristics for Lateral Power Devices Based on AlGaN Alloys

DOE PAGES

Coltrin, Michael E.; Baca, Albert G.; Kaplar, Robert J.

2017-10-26

In this paper, predicted lateral power device performance as a function of alloy composition is characterized by a standard lateral device figure-of-merit (LFOM) that depends on mobility, critical electric field, and sheet carrier density. The paper presents calculations of AlGaN electron mobility in lateral devices such as HEMTs across the entire alloy composition range. Alloy scattering and optical polar phonon scattering are the dominant mechanisms limiting carrier mobility. Due to the significant degradation of mobility from alloy scattering, at room temperature Al fractions greater than about 85% are required for improved LFOM relative to GaN using a conservative sheet chargemore » density of 1 × 10 13 cm –2. However, at higher temperatures at which AlGaN power devices are anticipated to operate, this “breakeven” composition decreases to about 65% at 500 K, for example. For high-frequency applications, the Johnson figure-of-merit (JFOM) is the relevant metric to compare potential device performance across materials platforms. At room temperature, the JFOM for AlGaN alloys is predicted to surpass that of GaN for Al fractions greater than about 40%.« less

Analysis of 2D Transport and Performance Characteristics for Lateral Power Devices Based on AlGaN Alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Coltrin, Michael E.; Baca, Albert G.; Kaplar, Robert J.

In this paper, predicted lateral power device performance as a function of alloy composition is characterized by a standard lateral device figure-of-merit (LFOM) that depends on mobility, critical electric field, and sheet carrier density. The paper presents calculations of AlGaN electron mobility in lateral devices such as HEMTs across the entire alloy composition range. Alloy scattering and optical polar phonon scattering are the dominant mechanisms limiting carrier mobility. Due to the significant degradation of mobility from alloy scattering, at room temperature Al fractions greater than about 85% are required for improved LFOM relative to GaN using a conservative sheet chargemore » density of 1 × 10 13 cm –2. However, at higher temperatures at which AlGaN power devices are anticipated to operate, this “breakeven” composition decreases to about 65% at 500 K, for example. For high-frequency applications, the Johnson figure-of-merit (JFOM) is the relevant metric to compare potential device performance across materials platforms. At room temperature, the JFOM for AlGaN alloys is predicted to surpass that of GaN for Al fractions greater than about 40%.« less

Bioactivity of calcium phosphate bioceramic coating fabricated by laser cladding

NASA Astrophysics Data System (ADS)

Zhu, Yizhi; Liu, Qibin; Xu, Peng; Li, Long; Jiang, Haibing; Bai, Yang

2016-05-01

There were always strong expectations for suitable biomaterials used for bone regeneration. In this study, to improve the biocompatiblity of titanium alloy, calcium phosphate bioceramic coating was obtained by laser cladding technology. The microstructure, phases, bioactivity, cell differentiation, morphology and resorption lacunae were investigated by optical microscope (OM), x-ray diffraction (XRD), methyl thiazolyl tetrazolium (MTT) assay, tartrate-resistant acid phosphatase (TRAP) staining and scanning electronic microscope (SEM), respectively. The results show that bioceramic coating consists of three layers, which are a substrate, an alloyed layer and a ceramic layer. Bioactive phases of β-tricalcium phosphate (β-TCP) and hydroxyapatite (HA) were found in ceramic coating. Osteoclast precursors have excellent proliferation on the bioceramic surface. The bioceramics coating could be digested by osteoclasts, which led to the resorption lacunae formed on its surface. It revealed that the gradient bioceramic coating has an excellent bioactivity.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wood, Elizabeth Sooby; Parker, Stephen Scott; Nelson, Andrew Thomas

The Fuel Cycle Research and Development program’s Advanced Fuels Campaign is currently supporting a range of experimental efforts aimed at the development and qualification of ‘accident tolerant’ nuclear fuel forms. One route to enhance the accident tolerance of nuclear fuel is to replace the zirconium alloy cladding, which is prone to rapid oxidation in steam at elevated temperatures, with a more oxidation-resistant cladding. Several cladding replacement solutions have been envisaged. The cladding can be completely replaced with a more oxidation resistant alloy, a layered approach can be used to optimize the strength, creep resistance, and oxidation tolerance of various materials,more » or the existing zirconium alloy cladding can be coated with a more oxidation-resistant material. Molybdenum is one candidate cladding material favored due to its high temperature creep resistance. However, it performs poorly under autoclave testing and suffers degradation under high temperature steam oxidation exposure. Development of composite cladding architectures consisting of a molybdenum core shielded by a molybdenum disilicide (MoSi 2) coating is hypothesized to improve the performance of a Mo-based cladding system. MoSi 2 was identified based on its high temperature oxidation resistance in O 2 atmospheres (e.g. air and “wet air”). However, its behavior in H 2O is less known. This report presents thermogravimetric analysis (TGA), scanning electron microscopy (SEM), and x-ray diffraction (XRD) results for MoSi 2 exposed to 670-1498 K water vapor. Synthetic air (80-20%, Ar-O 2) exposures were also performed, and those results are presented here for a comparative analysis. It was determined that MoSi 2 displays drastically different oxidation behavior in water vapor than in dry air. In the 670-1498 K temperature range, four distinct behaviors are observed. Parabolic oxidation is exhibited in only 670-773 K water vapor, a temperature range in which the material pests in dry O 2 environments. From 877-1084 K in water vapor, MoSi 2 undergoes rapid mass gain resulting in oxidation throughout the bulk of the sample at 980 K and 1084 K. The resulting material displays swelling and warping after the 980-1084 K exposures. A pre-passivation heat treatment performed at 1395 K was found capable of producing a coarse SiO 2 layer that limited pesting at lower temperatures in water vapor over the time periods investigated.« less

Models for the Configuration and Integrity of Partially Oxidized Fuel Rod Cladding at High Temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Siefken, L.J.

1999-01-01

Models were designed to resolve deficiencies in the SCDAP/RELAP5/MOD3.2 calculations of the configuration and integrity of hot, partially oxidized cladding. These models are expected to improve the calculations of several important aspects of fuel rod behavior. First, an improved mapping was established from a compilation of PIE results from severe fuel damage tests of the configuration of melted metallic cladding that is retained by an oxide layer. The improved mapping accounts for the relocation of melted cladding in the circumferential direction. Then, rules based on PIE results were established for calculating the effect of cladding that has relocated from abovemore » on the oxidation and integrity of the lower intact cladding upon which it solidifies. Next, three different methods were identified for calculating the extent of dissolution of the oxidic part of the cladding due to its contact with the metallic part. The extent of dissolution effects the stress and thus the integrity of the oxidic part of the cladding. Then, an empirical equation was presented for calculating the stress in the oxidic part of the cladding and evaluating its integrity based on this calculated stress. This empirical equation replaces the current criterion for loss of integrity which is based on temperature and extent of oxidation. Finally, a new rule based on theoretical and experimental results was established for identifying the regions of a fuel rod with oxidation of both the inside and outside surfaces of the cladding. The implementation of these models is expected to eliminate the tendency of the SCDAP/RELAP5 code to overpredict the extent of oxidation of the upper part of fuel rods and to underpredict the extent of oxidation of the lower part of fuel rods and the part with a high concentration of relocated material. This report is a revision and reissue of the report entitled, Improvements in Modeling of Cladding Oxidation and Meltdown.« less

Annealing of (DU-10Mo)-Zr Co-Rolled Foils

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pacheco, Robin Montoya; Alexander, David John; Mccabe, Rodney James

2017-01-20

Producing uranium-10wt% molybdenum (DU-10Mo) foils to clad with Al first requires initial bonding of the DU-10Mo foil to zirconium (Zr) by hot rolling, followed by cold rolling to final thickness. Rolling often produces wavy (DU-10Mo)-Zr foils that should be flattened before further processing, as any distortions could affect the final alignment and bonding of the Al cladding to the Zr co-rolled surface layer; this bonding is achieved by a hot isostatic pressing (HIP) process. Distortions in the (DU-10Mo)-Zr foil may cause the fuel foil to press against the Al cladding and thus create thinner or thicker areas in the Almore » cladding layer during the HIP cycle. Post machining is difficult and risky at this stage in the process since there is a chance of hitting the DU-10Mo. Therefore, it is very important to establish a process to flatten and remove any waviness. This study was conducted to determine if a simple annealing treatment could flatten wavy foils. Using the same starting material (i.e. DU-10Mo coupons of the same thickness), five different levels of hot rolling and cold rolling, combined with five different annealing treatments, were performed to determine the effect of these processing variables on flatness, bonding of layers, annealing response, microstructure, and hardness. The same final thickness was reached in all cases. Micrographs, textures, and hardness measurements were obtained for the various processing combinations. Based on these results, it was concluded that annealing at 650°C or higher is an effective treatment to appreciably reduce foil waviness.« less

Derivative effect of laser cladding on interface stability of YSZ@Ni coating on GH4169 alloy: An experimental and theoretical study

NASA Astrophysics Data System (ADS)

Zheng, Haizhong; Li, Bingtian; Tan, Yong; Li, Guifa; Shu, Xiaoyong; Peng, Ping

2018-01-01

Yttria-stabilized zirconia YSZ@Ni core-shell nanoparticles were used to prepare a thermal barrier coating (TBC) on a GH4169 alloy by laser cladding. Microstructural analysis showed that the TBC was composed of two parts: a ceramic and a bonding layer. In places where the ZrO2/Al2O3 eutectic structure was present in the ceramic layer, the Ni atoms diffused into the bonding layer, as confirmed by energy-dispersive X-ray spectroscopy (EDS). The derivative effect of laser cladding results in the original YSZ@Ni core-shell nanoparticles being translated into the Al2O3 crystal, activating the YSZ. The mechanism of ceramic/metal interface cohesion was studied in depth via first-principles and molecular dynamics simulation. The results show that the trend in the diffusion coefficients of Ni, Fe, Al, and Ti is DNi > DFe > DTi > DAl in the melting or solidification process of the material. The enthalpy of formation for Al2O3 is less than that of TiO2, resulting in a thermally grown oxide (TGO) Al2O3 phase transformation. With regard to the electronic structure, the trend in Mulliken population is QO-Ni > QZr-O > QO-Al. Although the bonding is slightly weakened between ZrO2/Al2O3 (QZr-O = 0.158 < QO-Ni = 0.220) compared to that in ZrO2/Ni, TGO Al2O3 can improve the oxidation resistance of the metal matrix. Thus, by comparing the connective and diffusive processes, our findings lay the groundwork for detailed and comprehensive studies of the laser cladding process for the production of composite materials.

Metal/Dielectric Multilayers for High Resolution Imaging

DTIC Science & Technology

2012-08-07

of a silicon waveguide coated by thin metal film. The proposed PWG structure consists of narrow silicon waveguide clad by gold film without top...where the waveguide thickness is 220nm and the lower oxide cladding is 2μm. The device consists of main waveguide (of waveguide width WSOI=450nm...evaporation, where 3nm thick titanium was used as adhesion layer before 40nm gold deposition took place. Finally, the samples were spun coated with

Investigation of semiconductor clad optical waveguides

NASA Technical Reports Server (NTRS)

Batchman, T. E.; Carson, R. F.

1985-01-01

A variety of techniques have been proposed for fabricating integrated optical devices using semiconductors, lithium niobate, and glasses as waveguides and substrates. The use of glass waveguides and their interaction with thin semiconductor cladding layers was studied. Though the interactions of these multilayer waveguide structures have been analyzed here using glass, they may be applicable to other types of materials as well. The primary reason for using glass is that it provides a simple, inexpensive way to construct waveguides and devices.

Online monitoring of thermo-cycles and its correlation with microstructure in laser cladding of nickel based super alloy

NASA Astrophysics Data System (ADS)

Muvvala, Gopinath; Patra Karmakar, Debapriya; Nath, Ashish Kumar

2017-01-01

Laser cladding, basically a weld deposition technique, is finding applications in many areas including surface coatings, refurbishment of worn out components and generation of functionally graded components owing to its various advantages over conventional methods like TIG, PTA etc. One of the essential requirements to adopt this technique in industrial manufacturing is to fulfil the increasing demand on product quality which could be controlled through online process monitoring and correlating the signals with the mechanical and metallurgical properties. Rapid thermo-cycle i.e. the fast heating and cooling rates involved in this process affect above properties of the deposited layer to a great extent. Therefore, the current study aims to monitor the thermo-cycles online, understand its variation with process parameters and its effect on different quality aspects of the clad layer, like microstructure, elemental segregations and mechanical properties. The effect of process parameters on clad track geometry is also studied which helps in their judicious selection to deposit a predefined thickness of coating. In this study Inconel 718, a nickel based super alloy is used as a clad material and AISI 304 austenitic steel as a substrate material. The thermo-cycles during the cladding process were recorded using a single spot monochromatic pyrometer. The heating and cooling rates were estimated from the recorded thermo-cycles and its effects on microstructures were characterised using SEM and XRD analyses. Slow thermo-cycles resulted in severe elemental segregations favouring Laves phase formation and increased γ matrix size which is found to be detrimental to the mechanical properties. Slow cooling also resulted in termination of epitaxial growth, forming equiaxed grains near the surface, which is not preferred for single crystal growth. Heat treatment is carried out and the effect of slow cooling and the increased γ matrix size on dissolution of segregated elements in metal matrix is studied.

Joining of Zirconium Diboride-Based Ceramic Composites to Metallic Systems for High-Temperature Applications

NASA Technical Reports Server (NTRS)

Asthana, R.; Singh, M.

2008-01-01

Three types of hot-pressed zirconium diboride (ZrB2)-based ultra-high-temperature ceramic composites (UHTCC), ZrB2-SiC (ZS), ZrB2-SiC-C (ZSC), and ZrB2-SCS9-SiC (ZSS), were joined to Cu-clad-Mo using two Ag-Cu brazes (Cusil-ABA and Ticusil, T(sub L) approx.1073-1173 K) and two Pd-base brazes (Palco and Palni, T(sub L) approx.1493-1513 K). Scanning Electron Microscopy (SEM) coupled with energy-dispersive spectroscopy (EDS) revealed greater chemical interaction in joints made using Pd-base brazes than in joints made using Ag-Cu based active brazes. The degree of densification achieved in hot pressed composites influenced the Knoop hardness of the UHTCC and the hardness distribution across the braze interlayer. The braze region in Pd-base system displayed higher hardness in joints made using fully-dense ZS composites than in joints made using partially-dense ZSS composites and the carbon-containing ZSC composites. Calculations indicate a small negative elastic strain energy and an increase in the UHTCC's fracture stress up to a critical clad layer thickness . Above this critical thickness, strain energy in the UHTCC is positive, and it increases with increasing clad layer thickness. Empirical projections show a reduction in the effective thermal resistance of the joints and highlight the potential benefits of joining the UHTCC to Cu-clad-Mo.

Solar Power Wires Based on Organic Photovoltaic Materials

NASA Astrophysics Data System (ADS)

Lee, Michael R.; Eckert, Robert D.; Forberich, Karen; Dennler, Gilles; Brabec, Christoph J.; Gaudiana, Russell A.

2009-04-01

Organic photovoltaics in a flexible wire format has potential advantages that are described in this paper. A wire format requires long-distance transport of current that can be achieved only with conventional metals, thus eliminating the use of transparent oxide semiconductors. A phase-separated, photovoltaic layer, comprising a conducting polymer and a fullerene derivative, is coated onto a thin metal wire. A second wire, coated with a silver film, serving as the counter electrode, is wrapped around the first wire. Both wires are encased in a transparent polymer cladding. Incident light is focused by the cladding onto to the photovoltaic layer even when it is completely shadowed by the counter electrode. Efficiency values of the wires range from 2.79% to 3.27%.

The influence of cladding on fission gas release from irradiated U-Mo monolithic fuel

NASA Astrophysics Data System (ADS)

Burkes, Douglas E.; Casella, Amanda J.; Casella, Andrew M.

2017-04-01

The monolithic uranium-molybdenum (U-Mo) alloy has been proposed as a fuel design capable of converting the world's highest power research reactors from use of high enriched uranium to low enriched uranium. However, a zirconium (Zr) diffusion barrier must be used to eliminate interactions that form between the U-Mo monolith and aluminum alloy 6061 (AA6061) cladding during fabrication and are enhanced during irradiation. One aspect of fuel development and qualification is to demonstrate an appropriate understanding of the extent of fission product release from the fuel under anticipated service environments. An exothermic reaction has previously been observed between the AA6061 cladding and Zr diffusion layer. In this paper, two fuel segments with different irradiation history were subjected to specified thermal profiles under a controlled atmosphere using a thermogravimetric/differential thermal analyzer coupled with a mass spectrometer inside a hot cell. Samples from each segment were tested with cladding and without cladding to investigate the effect, if any, that the exothermic reaction has on fission gas release mechanisms. Measurements revealed there is an instantaneous effect of the cladding/Zr exothermic reaction, but not necessarily a cumulative effect above approximately 973 K (700 °C). The mechanisms responsible for fission gas release events are discussed.

The influence of cladding on fission gas release from irradiated U-Mo monolithic fuel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Burkes, Douglas E.; Casella, Amanda J.; Casella, Andrew M.

2017-04-01

The monolithic uranium-molybdenum (U-Mo) alloy has been proposed as a fuel design capable of converting the world’s highest power research reactors from use of high enriched uranium to low enriched uranium. However, a zirconium (Zr) diffusion barrier must be used to eliminate interactions that form during fabrication and are enhanced during irradiation between the U-Mo monolith and aluminum alloy 6061 (AA6061) cladding. One aspect of fuel development and qualification is to demonstrate appropriate understanding of the extent of fission product release from the fuel under anticipated service environments. An exothermic reaction has previously been observed between the AA6061 cladding andmore » Zr diffusion layer. In this paper, two fuel segments with different irradiation history were subjected to specified thermal profiles under a controlled atmosphere using a thermogravimetric/differential thermal analyzer coupled with a mass spectrometer inside a hot cell. Samples from each segment were tested with cladding and without cladding to investigate the effect, if any, that the exothermic reaction has on fission gas release mechanisms. Measurements revealed there is an instantaneous effect of the cladding/Zr exothermic reaction, but not necessarily a cumulative effect above approximately 973 K (700 oC). The mechanisms responsible for fission gas release events are discussed.« less

On metal contacts of terahertz quantum cascade lasers with a metal-metal waveguide

NASA Astrophysics Data System (ADS)

Fathololoumi, Saeed; Dupont, Emmanuel; Ghasem Razavipour, S.; Laframboise, Sylvain R.; Parent, Guy; Wasilewski, Zbigniew; Liu, H. C.; Ban, Dayan

2011-10-01

This paper reports an experimental study of the effects of different metal claddings on the performance of terahertz quantum cascade lasers. The experimental results show that by using a metal cladding made of Ta/Cu/Au to replace that of Pd/Ge/Ti/Pt/Au, the maximum lasing temperature of the devices is increased from 132 to 172 K, and the threshold current density of the devices at 10 K can be reduced from 0.74 to 0.68 kA cm-2. The improvement of the device performance is attributed to lower optical losses associated with the metal cladding layers. The different effects of the metal contacts on device optical properties and electrical properties are also discussed.

Athermal Silicon-on-insulator ring resonators by overlaying a polymer cladding on narrowed waveguides.

PubMed

Teng, Jie; Dumon, Pieter; Bogaerts, Wim; Zhang, Hongbo; Jian, Xigao; Han, Xiuyou; Zhao, Mingshan; Morthier, Geert; Baets, Roel

2009-08-17

Athermal silicon ring resonators are experimentally demonstrated by overlaying a polymer cladding on narrowed silicon wires. The ideal width to achieve athermal condition for the TE mode of 220 nm-height SOI waveguides is found to be around 350 nm. After overlaying a polymer layer, the wavelength temperature dependence of the silicon ring resonator is reduced to less than 5 pm/degrees C, almost eleven times less than that of normal silicon waveguides. The optical loss of a 350-nm bent waveguide (with a radius of 15 microm) is extracted from the ring transmission spectrum. The scattering loss is reduced to an acceptable level of about 50 dB/cm after overlaying a polymer cladding. (c) 2009 Optical Society of America

Yb-doped large mode area tapered fiber with depressed cladding and dopant confinement

NASA Astrophysics Data System (ADS)

Roy, V.; Paré, C.; Labranche, B.; Laperle, P.; Desbiens, L.; Boivin, M.; Taillon, Y.

2017-02-01

A polarization-maintaining Yb-doped large mode area fiber with depressed-index inner cladding layer and confinement of rare-earth dopants has been drawn as a long tapered fiber. The larger end features a core/clad diameter of 56/400 μm and core NA 0.07, thus leading to an effective mode area over 1000 μm2. The fiber was tested up to 100 W average power, with near diffraction-limited output as the beam quality M2 was measured < 1.2. As effective single-mode guidance is enforced in the first section due to enhanced bending loss, subsequent adiabatic transition of the mode field in the taper section preserves single-mode amplification towards the larger end of the fiber.

Superlattice barrier varactors

NASA Technical Reports Server (NTRS)

Raman, C.; Sun, J. P.; Chen, W. L.; Munns, G.; East, J.; Haddad, G.

1992-01-01

SBV (Single Barrier Varactor) diodes have been proposed as alternatives to Schottky barrier diodes for harmonic multiplier applications. However, these show a higher current than expected. The excess current is due to X valley transport in the barrier. We present experimental results showing that the use of a superlattice barrier and doping spikes in the GaAs depletion regions on either side of the barrier can reduce the excess current and improve the control of the capacitance vs. voltage characteristic. The experimental results consist of data taken from two types of device structures. The first test structure was used to study the performance of AlAs/GaAs superlattice barriers. The wafer was fabricated into 90 micron diameter mesa diodes and the resulting current vs. voltage characteristics were measured. A 10 period superlattice structure with a total thickness of approximately 400 A worked well as an electron barrier. The structure had a current density of about one A/sq cm at one volt at room temperature. The capacitance variation of these structures was small because of the design of the GaAs cladding layers. The second test structure was used to study cladding layer designs. These wafers were InGaAs and InAlAs layers lattice matched to an InP substrate. The layers have n(+) doping spikes near the barrier to increase the zero bias capacitance and control the shape of the capacitance vs. voltage characteristic. These structures have a capacitance ratio of 5:1 and an abrupt change from maximum to minimum capacitance. The measurements were made at 80 K. Based on the information obtained from these two structures, we have designed a structure that combines the low current density barrier with the improved cladding layers. The capacitance and current-voltage characteristics from this structure are presented.

Nuclear fuel element with axially aligned fuel pellets and fuel microspheres therein

DOEpatents

Sease, J.D.; Harrington, F.E.

1973-12-11

Elongated single- and multi-region fuel elements are prepared by replacing within a cladding container a coarse fraction of fuel material which includes plutonium and uranium in the appropriate regions of the fuel element and then infiltrating with vibration a fine-sized fraction of uranium-containing microspheres throughout all interstices in the coarse material in a single loading. The fine, rigid material defines a thin annular layer between the coarse fraction and the cladding to reduce adverse mechanical and chemical interactions. (Official Gazette)

Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Yan, Long; Zhang, Yuantao; Han, Xu; Deng, Gaoqiang; Li, Pengchong; Yu, Ye; Chen, Liang; Li, Xiaohang; Song, Junfeng

2018-04-01

Polarization-induced doping has been shown to be effective for wide-bandgap III-nitrides. In this work, we demonstrated a significantly enhanced hole concentration via linearly grading an N-polar AlxGa1-xN (x = 0-0.3) layer grown by metal-organic chemical vapor deposition. The hole concentration increased by ˜17 times compared to that of N-polar p-GaN at 300 K. The fitting results of temperature-dependent hole concentration indicated that the holes in the graded p-AlGaN layer comprised both polarization-induced and thermally activated ones. By optimizing the growth conditions, the hole concentration was further increased to 9.0 × 1017 cm-3 in the graded AlGaN layer. The N-polar blue-violet light-emitting device with the graded p-AlGaN shows stronger electroluminescence than the one with the conventional p-GaN. The study indicates the potential of the polarization doping technique in high-performance N-polar light-emitting devices.

Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer.

PubMed

Heilmann, Martin; Munshi, A Mazid; Sarau, George; Göbelt, Manuela; Tessarek, Christian; Fauske, Vidar T; van Helvoort, Antonius T J; Yang, Jianfeng; Latzel, Michael; Hoffmann, Björn; Conibeer, Gavin; Weman, Helge; Christiansen, Silke

2016-06-08

The monolithic integration of wurtzite GaN on Si via metal-organic vapor phase epitaxy is strongly hampered by lattice and thermal mismatch as well as meltback etching. This study presents single-layer graphene as an atomically thin buffer layer for c-axis-oriented growth of vertically aligned GaN nanorods mediated by nanometer-sized AlGaN nucleation islands. Nanostructures of similar morphology are demonstrated on graphene-covered Si(111) as well as Si(100). High crystal and optical quality of the nanorods are evidenced through scanning transmission electron microscopy, micro-Raman, and cathodoluminescence measurements supported by finite-difference time-domain simulations. Current-voltage characteristics revealed high vertical conduction of the as-grown GaN nanorods through the Si substrates. These findings are substantial to advance the integration of GaN-based devices on any substrates of choice that sustains the GaN growth temperatures, thereby permitting novel designs of GaN-based heterojunction device concepts.

Microstructural analysis of Ti/Al/Ti/Au ohmic contacts to n-AlGaN/GaN

NASA Astrophysics Data System (ADS)

Chen, J.; Ivey, D. G.; Bardwell, J.; Liu, Y.; Tang, H.; Webb, J. B.

2002-05-01

To develop high quality AlGaN/GaN heterostructure field effect transistors for use in high power, high frequency, and high temperature applications, low resistance, thermal stable ohmic contacts with good surface morphology are essential. Low specific contact resistances have been achieved using an Au/Ti/Al/Ti contact: a minimum value of 6.33×10-6 Ω cm2 was attained after annealing at 700 °C for 30 s. Microstructural analysis using transmission electron microscopy indicated that there is significant interaction between the metallization components and the semiconductor during annealing. The optimum electrical properties correspond to a microstructure that consists of Au2Ti and TiAl layers as well as of a thin Ti-rich layer (~10 nm thick) at the metallization/AlGaN interface. Degradation of the contact occurred for annealing temperatures in excess of 750 °C, and was accompanied by decomposition of the AlGaN layer and formation of a Au-Ti-Al-Ga quaternary phase.

Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulation layer

NASA Astrophysics Data System (ADS)

Liu, Chao; Ren, Zhi-Wei; Chen, Xin; Zhao, Bi-Jun; Wang, Xing-Fu; Yin, Yi-An; Li, Shu-Ti

2013-05-01

P-InGaN/p-GaN superlattices (SLs) are developed for a hole accumulation layer (HAL) of a blue light emitting diode (LED). Free hole concentration as high as 2.6 × 1018 cm-3 is achieved by adjusting the Cp2Mg flow rate during the growth of p-InGaN/p-GaN SLs. The p-InGaN/p-GaN SLs with appropriate Cp2Mg flow rates are then incorporated between the multi-quantum well and AlGaN electron blocking layer as an HAL, which leads to the enhancement of light output power by 29% at 200 mA, compared with the traditional LED without such SL HAL. Meanwhile, the efficiency droop is also effectively alleviated in the LED with the SL HAL. The improved performance is attributed to the increased hole injection efficiency, and the reduced electron leakage by inserting the p-type SL HAL.

Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices

DOE PAGES

Kaplar, R. J.; Allerman, A. A.; Armstrong, A. M.; ...

2016-12-20

“Ultra” wide-bandgap semiconductors are an emerging class of materials with bandgaps greater than that of gallium nitride (EG > 3.4 eV) that may ultimately benefit a wide range of applications, including switching power conversion, pulsed power, RF electronics, UV optoelectronics, and quantum information. This paper describes the progress made to date at Sandia National Laboratories to develop one of these materials, aluminum gallium nitride, targeted toward high-power devices. The advantageous material properties of AlGaN are reviewed, questions concerning epitaxial growth and defect physics are covered, and the processing and performance of vertical- and lateral-geometry devices are described. The paper concludesmore » with an assessment of the outlook for AlGaN, including outstanding research opportunities and a brief discussion of other potential applications.« less

Cladding material, tube including such cladding material and methods of forming the same

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garnier, John E.; Griffith, George W.

A multi-layered cladding material including a ceramic matrix composite and a metallic material, and a tube formed from the cladding material. The metallic material forms an inner liner of the tube and enables hermetic sealing of thereof. The metallic material at ends of the tube may be exposed and have an increased thickness enabling end cap welding. The metallic material may, optionally, be formed to infiltrate voids in the ceramic matrix composite, the ceramic matrix composite encapsulated by the metallic material. The ceramic matrix composite includes a fiber reinforcement and provides increased mechanical strength, stiffness, thermal shock resistance and highmore » temperature load capacity to the metallic material of the inner liner. The tube may be used as a containment vessel for nuclear fuel used in a nuclear power plant or other reactor. Methods for forming the tube comprising the ceramic matrix composite and the metallic material are also disclosed.« less

Development of Cold Spray Coatings for Accident-Tolerant Fuel Cladding in Light Water Reactors

NASA Astrophysics Data System (ADS)

Maier, Benjamin; Yeom, Hwasung; Johnson, Greg; Dabney, Tyler; Walters, Jorie; Romero, Javier; Shah, Hemant; Xu, Peng; Sridharan, Kumar

2018-02-01

The cold spray coating process has been developed at the University of Wisconsin-Madison for the deposition of oxidation-resistant coatings on zirconium alloy light water reactor fuel cladding with the goal of improving accident tolerance during loss of coolant scenarios. Coatings of metallic (Cr), alloy (FeCrAl), and ceramic (Ti2AlC) materials were successfully deposited on zirconium alloy flats and cladding tube sections by optimizing the powder size, gas preheat temperature, pressure and composition, and other process parameters. The coatings were dense and exhibited excellent adhesion to the substrate. Evaluation of the samples after high-temperature oxidation tests at temperatures up to 1300°C showed that the cold spray coatings significantly mitigate oxidation kinetics because of the formation of thin passive oxide layers on the surface. The results of the study indicate that the cold spray coating process is a viable near-term option for developing accident-tolerant zirconium alloy fuel cladding.

Structure for monolithic optical circuits

NASA Technical Reports Server (NTRS)

Evanchuk, Vincent L. (Inventor)

1984-01-01

A method for making monolithic optical circuits, with related optical devices as required or desired, on a supporting surface (10) consists of coating the supporting surface with reflecting metal or cladding resin, spreading a layer of liquid radiation sensitive plastic (12) on the surface, exposing the liquid plastic with a mask (14) to cure it in a desired pattern of light conductors (16, 18, 20), washing away the unexposed liquid plastic, and coating the conductors thus formed with reflective metal or cladding resin. The index of refraction for the cladding (22) is selected to be lower than for the conductors so that light in the conductors will be reflected by the interface with the cladding. For multiple level conductors, as where one conductor must cross over another, the process may be repeated to fabricate a bridge with columns (24, 26) of conductors to the next level, and conductor (28) between the columns. For more efficient transfer of energy over the bridge, faces at 45.degree. may be formed to reflect light up and across the bridge.

Low-temperature hermetic sealing of optical fiber components

DOEpatents

Kramer, D.P.

1996-10-22

A method for manufacturing low-temperature hermetically sealed optical fiber components is provided. The method comprises the steps of: inserting an optical fiber into a housing, the optical fiber having a glass core, a glass cladding and a protective buffer layer disposed around the core and cladding; heating the housing to a predetermined temperature, the predetermined temperature being below a melting point for the protective buffer layer and above a melting point of a solder; placing the solder in communication with the heated housing to allow the solder to form an eutectic and thereby fill a gap between the interior of the housing and the optical fiber; and cooling the housing to allow the solder to form a hermetic compression seal between the housing and the optical fiber. 5 figs.

Low-temperature hermetic sealing of optical fiber components

DOEpatents

Kramer, Daniel P.

1996-10-22

A method for manufacturing low-temperature hermetically sealed optical fi components is provided. The method comprises the steps of: inserting an optical fiber into a housing, the optical fiber having a glass core, a glass cladding and a protective buffer layer disposed around the core and cladding; heating the housing to a predetermined temperature, the predetermined temperature being below a melting point for the protective buffer layer and above a melting point of a solder; placing the solder in communication with the heated housing to allow the solder to form an eutectic and thereby fill a gap between the interior of the housing and the optical fiber; and cooling the housing to allow the solder to form a hermetic compression seal between the housing and the optical fiber.

Fabrication of Monolithic RERTR Fuels by Hot Isostatic Pressing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jan-Fong Jue; Blair H. Park; Curtis R. Clark

2010-11-01

The RERTR (Reduced Enrichment for Research and Test Reactors) Program is developing advanced nuclear fuels for high-power test reactors. Monolithic fuel design provides higher uranium loading than that of the traditional dispersion fuel design. Hot isostatic pressing is a promising process for low-cost batch fabrication of monolithic RERTR fuel plates for these high-power reactors. Bonding U Mo fuel foil and 6061 Al cladding by hot isostatic press bonding was successfully developed at Idaho National Laboratory. Due to the relatively high processing temperature, the interaction between fuel meat and aluminum cladding is a concern. Two different methods were employed to mitigatemore » this effect: (1) a diffusion barrier and (2) a doping addition to the interface. Both types of fuel plates have been fabricated by hot isostatic press bonding. Preliminary results show that the direct fuel/cladding interaction during the bonding process was eliminated by introducing a thin zirconium diffusion barrier layer between the fuel and the cladding. Fuel plates were also produced and characterized with a silicon-rich interlayer between fuel and cladding. This paper reports the recent progress of this developmental effort and identifies the areas that need further attention.« less

Optimization of cladding parameters for resisting corrosion on low carbon steels using simulated annealing algorithm

NASA Astrophysics Data System (ADS)

Balan, A. V.; Shivasankaran, N.; Magibalan, S.

2018-04-01

Low carbon steels used in chemical industries are frequently affected by corrosion. Cladding is a surfacing process used for depositing a thick layer of filler metal in a highly corrosive materials to achieve corrosion resistance. Flux cored arc welding (FCAW) is preferred in cladding process due to its augmented efficiency and higher deposition rate. In this cladding process, the effect of corrosion can be minimized by controlling the output responses such as minimizing dilution, penetration and maximizing bead width, reinforcement and ferrite number. This paper deals with the multi-objective optimization of flux cored arc welding responses by controlling the process parameters such as wire feed rate, welding speed, Nozzle to plate distance, welding gun angle for super duplex stainless steel material using simulated annealing technique. Regression equation has been developed and validated using ANOVA technique. The multi-objective optimization of weld bead parameters was carried out using simulated annealing to obtain optimum bead geometry for reducing corrosion. The potentiodynamic polarization test reveals the balanced formation of fine particles of ferrite and autenite content with desensitized nature of the microstructure in the optimized clad bead.

On the AlxGa1-xN/AlyGa1-yN/AlxGa1-xN (x>y) p-electron blocking layer to improve the hole injection for AlGaN based deep ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Chu, Chunshuang; Tian, Kangkai; Fang, Mengqian; Zhang, Yonghui; Li, Luping; Bi, Wengang; Zhang, Zi-Hui

2018-01-01

This work proposes the [0001] oriented AlGaN-based deep ultraviolet (DUV) light-emitting diode (LED) possessing a specifically designed p-electron blocking layer (p-EBL) to achieve the high internal quantum efficiency. Both electrons and holes can be efficiently injected into the active region by adopting the Al0.60Ga0.40N/Al0.50Ga0.50N/Al0.60Ga0.40N structured p-EBL, in which a p-Al0.50Ga0.50N layer is embedded into the p-EBL. Moreover, the impact of different thicknesses for the p-Al0.50Ga0.50N insertion layer on the hole and electron injections has also been investigated. Compared with the DUV LED with the bulk p-Al0.60Ga0.40N as the EBL, the proposed LED architectures improve the light output power if the thickness of the p-Al0.50Ga0.50N insertion layer is properly designed.

Investigation of the microstructure of Ni and B4C ceramic-metal mixtures obtained by cold spray coating and followed by laser cladding

NASA Astrophysics Data System (ADS)

Filippov, A. A.; Fomin, V. M.; Orishich, A. M.; Malikov, A. G.; Ryashin, N. S.; Golyshev, A. A.

2017-10-01

In the present work, a combined method is considered for the production of a metal-matrix composite coating based on Ni and B4C. The coating is created by consistently applied methods: cold spray and laser cladding. Main focus of this work aimed to microstructure of coatings, element content and morphology of laser tracks. At this stage, the authors focused on the interaction of the laser unit with the substance without affecting the layer-growing technology products. It is shown that coating has deformed particles of nickel and the significantly decreased content of ceramic particles B4C after cold spray. After laser cladding there are no boundaries between nickel and dramatically changes in ceramic particles.

Low-threshold voltage ultraviolet light-emitting diodes based on (Al,Ga)N metal-insulator-semiconductor structures

NASA Astrophysics Data System (ADS)

Liang, Yu-Han; Towe, Elias

2017-12-01

Al-rich III-nitride-based deep-ultraviolet (UV) (275-320 nm) light-emitting diodes are plagued with a low emission efficiency and high turn-on voltages. We report Al-rich (Al,Ga)N metal-insulator-semiconductor UV light-emitting Schottky diodes with low turn-on voltages of <3 V, which are about half those of typical (Al,Ga)N p-i-n diodes. Our devices use a thin AlN film as the insulator and an n-type Al0.58Ga0.42N film as the semiconductor. To improve the efficiency, we inserted a GaN quantum-well structure between the AlN insulator and the n-type Al x Ga1- x N semiconductor. The benefits of the quantum-well structure include the potential to tune the emission wavelength and the capability to confine carriers for more efficient radiative recombination.

Microstructure and Antiwear Property of Laser Cladding Ni-Co Duplex Coating on Copper.

PubMed

Wang, Yiyong; Liang, Zhipeng; Zhang, Junwei; Ning, Zhe; Jin, Hui

2016-07-28

Ni-Co duplex coatings were cladded onto Cu to improve the antiwear properties of Cu products. Prior to laser cladding, n-Al₂O₃/Ni layers were introduced as interlayers between laser cladding coatings and Cu substrates to improve the laser absorptivity of these substrates and ensure defect-free laser cladding coatings. The structure and morphology of the coatings were characterized by scanning electron microscopy and optical microscopy, and the phases of the coatings were analyzed by X-ray diffraction. Their hardness was measured using a microhardness tester. Experimental results showed that defect-free composite coatings were obtained and that the coatings were metallurgically bonded to the substrates. The surface of the Ni-Co duplex coatings comprised a Co-based solid solution, Cr₇C₃, (Fe,Ni) 23 C₆, and other strengthening phases. The microhardness and wear resistance of the duplex coatings were significantly improved compared with the Cu substrates. The average microhardness of the cladded coatings was 845.6 HV, which was approximately 8.2 times greater than that of the Cu substrates (102.6 HV). The volume loss of the Cu substrates was approximately 7.5 times greater than that of the Ni-Co duplex coatings after 60 min of sliding wear testing. The high hardness of and lack of defects in the Ni-Co duplex coatings reduced the plastic deformation and adhesive wear of the Cu substrates, resulting in improved wear properties.

Al0 0.3Ga 0.7N PN diode with breakdown voltage >1600 V

DOE PAGES

Allerman, A. A.; Armstrong, A. M.; Fischer, A. J.; ...

2016-07-21

Demonstration of Al0 0.3Ga 0.7N PN diodes grown with breakdown voltages in excess of 1600 V is reported. The total epilayer thickness is 9.1 μm and was grown by metal-organic vapour-phase epitaxy on 1.3-mm-thick sapphire in order to achieve crack-free structures. A junction termination edge structure was employed to control the lateral electric fields. A current density of 3.5 kA/cm 2 was achieved under DC forward bias and a reverse leakage current <3 nA was measured for voltages <1200 V. The differential on-resistance of 16 mΩ cm 2 is limited by the lateral conductivity of the n-type contact layer requiredmore » by the front-surface contact geometry of the device. An effective critical electric field of 5.9 MV/cm was determined from the epilayer properties and the reverse current–voltage characteristics. To our knowledge, this is the first aluminium gallium nitride (AlGaN)-based PN diode exhibiting a breakdown voltage in excess of 1 kV. Finally, we note that a Baliga figure of merit (V br 2/R spec,on) of 150 MW/cm 2 found is the highest reported for an AlGaN PN diode and illustrates the potential of larger-bandgap AlGaN alloys for high-voltage devices.« less

The Influence of the In-Situ Clad Staining on the Corrosion of Zircaloy in PWR Water Environment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kammenzind, B.F., Eklund, K.L. and Bajaj, R.

Zircaloy cladding tubes strain in-situ during service life in the corrosive environment of a Pressurized Water Reactor for a variety of reasons. First, the tube undergoes stress free growth due to the preferential alignment of irradiation induced vacancy loops on basal planes. Positive strains develop in the textured tubes along prism orientations while negative strains develop along basal orientations (Reference (a)). Second, early in life, free standing tubes will often shrink by creep in the diametrical direction under the external pressure of the water environment, but potentially grow later in life in the diametrical direction once the expanding fuel pelletmore » contacts the cladding inner wall (Reference (b)). Finally, the Zircaloy cladding absorbs hydrogen as a by product of the corrosion reaction (Reference (c)). Once above the solubility limit in Zircaloy, the hydride precipitates as zirconium hydride (References (c) through (j)). Both hydrogen in solid solution and precipitated as Zirconium hydride cause a volume expansion of the Zircaloy metal (Reference (k)). Few studies are reported on that have investigated the influence that in-situ clad straining has on corrosion of Zircaloy. If Zircaloy corrosion rates are governed by diffusion of anions through a thin passivating boundary layer at the oxide-to-metal interface (References (l) through (n)), in-situ straining of the cladding could accelerate the corrosion process by prematurely breaking that passivating oxide boundary layer. References (o) through (q) investigated the influence that an applied tensile stress has on the corrosion resistance of Zircaloy. Knights and Perkins, Reference (o), reported that the applied tensile stress increased corrosion rates above a critical stress level in 400 C and 475 C steam, but not at lower temperatures nor in dry oxygen environments. This latter observation suggested that hydrogen either in the oxide or at the oxide-to-metal interface is involved in the observed stress effect. Kim et al. (Reference (p)) and Kim and Kim (Reference (q)) more recently investigated the influence that an applied hoop stress has on the corrosion resistance of Zircaloy tubes in a 400 C steam and in a 350 C concentrated lithia water environment. Both of these studies found the applied tensile hoop stress to have no effect on cladding corrosion rates in the 400 C steam environment but to have accelerated corrosion in the lithiated water environment. In both cases, the corrosion acceleration in the lithiated water environment was attributed to the accumulation of the increased hydrogen picked up in the lithiated environment into the tensile regions of the test specimen. Dense hydride rims have been shown, independent of clad strain, to accelerate the corrosion of Zirconium alloys (References (r) and (s)), suggesting that the primary effect of applied stresses on the corrosion of Zircaloy in the above studies is through the accumulation of hydrogen at the oxide-to-metal interface and not through a direct mechanical breakdown of the passivating boundary layer. To further investigate the potential role of in-situ clad straining (or stress) on Zircaloy corrosion rates, two experimental studies were performed. First, several samples that were irradiated with and without an applied stress were destructively examined for the extent of corrosion occurring in strained and nonstrained regions of the test samples. The extent of corrosion was determined, posttest, by metallographic examination. Second, the corrosion process was monitored in-situ using electrochemical impedance spectroscopy on samples exposed out-of-reactor with and without an applied stress. Post test, these autoclave samples were also metallographically examined.« less

Genetic design of enhanced valley splitting towards a spin qubit in silicon

PubMed Central

Zhang, Lijun; Luo, Jun-Wei; Saraiva, Andre; Koiller, Belita; Zunger, Alex

2013-01-01

The long spin coherence time and microelectronics compatibility of Si makes it an attractive material for realizing solid-state qubits. Unfortunately, the orbital (valley) degeneracy of the conduction band of bulk Si makes it difficult to isolate individual two-level spin-1/2 states, limiting their development. This degeneracy is lifted within Si quantum wells clad between Ge-Si alloy barrier layers, but the magnitude of the valley splittings achieved so far is small—of the order of 1 meV or less—degrading the fidelity of information stored within such a qubit. Here we combine an atomistic pseudopotential theory with a genetic search algorithm to optimize the structure of layered-Ge/Si-clad Si quantum wells to improve this splitting. We identify an optimal sequence of multiple Ge/Si barrier layers that more effectively isolates the electron ground state of a Si quantum well and increases the valley splitting by an order of magnitude, to ∼9 meV. PMID:24013452

III-nitride integration on ferroelectric materials of lithium niobate by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Namkoong, Gon; Lee, Kyoung-Keun; Madison, Shannon M.; Henderson, Walter; Ralph, Stephen E.; Doolittle, W. Alan

2005-10-01

Integration of III-nitride electrical devices on the ferroelectric material lithium niobate (LiNbO3) has been demonstrated. As a ferroelectric material, lithium niobate has a polarization which may provide excellent control of the polarity of III-nitrides. However, while high temperature, 1000°C, thermal treatments produce atomically smooth surfaces, improving adhesion of GaN epitaxial layers on lithium niobate, repolarization of the substrate in local domains occurs. These effects result in multi domains of mixed polarization in LiNbO3, producing inversion domains in subsequent GaN epilayers. However, it is found that AlN buffer layers suppress inversion domains of III-nitrides. Therefore, two-dimensional electron gases in AlGaN /GaN heterojunction structures are obtained. Herein, the demonstration of the monolithic integration of high power devices with ferroelectric materials presents possibilities to control LiNbO3 modulators on compact optoelectronic/electronic chips.

Theoretical and experimental studies of electric field distribution in N-polar GaN/AlGaN/GaN heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gladysiewicz, M., E-mail: marta.gladysiewicz@pwr.edu.pl; Janicki, L.; Kudrawiec, R.

2015-12-28

Electric field distribution in N-polar GaN(channel)/AlGaN/GaN(buffer) heterostructures was studied theoretically by solving Schrodinger and Poisson equations in a self-consistent manner for various boundary conditions and comparing results of these calculations with experimental data, i.e., measurements of electric field in GaN(channel) and AlGaN layers by electromodulation spectroscopy. A very good agreement between theoretical calculations and experimental data has been found for the Fermi-level located at ∼0.3 eV below the conduction band at N-polar GaN surface. With this surface boundary condition, the electric field distribution and two dimensional electron gas concentration are determined for GaN(channel)/AlGaN/GaN(buffer) heterostructures of various thicknesses of GaN(channel) and AlGaNmore » layers.« less

Ohmic contact formation between metal and AlGaN/GaN heterostructure via graphene insertion

NASA Astrophysics Data System (ADS)

Sung Park, Pil; Reddy, Kongara M.; Nath, Digbijoy N.; Yang, Zhichao; Padture, Nitin P.; Rajan, Siddharth

2013-04-01

A simple method for the creation of Ohmic contact to 2D electron gas in AlGaN/GaN high electron-mobility transistors using Cr/graphene layer is demonstrated. A weak temperature dependence of this Ohmic contact observed in the range 77 to 300 K precludes thermionic emission or trap-assisted hopping as possible carrier-transport mechanisms. It is suggested that the Cr/graphene combination acts akin to a doped n-type semiconductor in contact with AlGaN/GaN heterostructure, and promotes carrier transport along percolating Al-lean paths through the AlGaN layer. This use of graphene offers a simple method for making Ohmic contacts to AlGaN/GaN heterostructures, circumventing complex additional processing steps involving high temperatures. These results could have important implications for the fabrication and manufacturing of AlGaN/GaN-based microelectronic and optoelectronic devices/sensors of the future.

Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Luo, B.; Kim, Jihyun; Ren, F.; Gillespie, J. K.; Fitch, R. C.; Sewell, J.; Dettmer, R.; Via, G. D.; Crespo, A.; Jenkins, T. J.; Gila, B. P.; Onstine, A. H.; Allums, K. K.; Abernathy, C. R.; Pearton, S. J.; Dwivedi, R.; Fogarty, T. N.; Wilkins, R.

2003-03-01

Sc2O3-passivated AlGaN/GaN high electron mobility transistors (HEMTs) were irradiated with 40 MeV protons to a fluence corresponding to approximately 10 years in low-earth orbit (5×109 cm-2). Devices with an AlGaN cap layer showed less degradation in dc characteristics than comparable GaN-cap devices, consistent with differences in average band energy. The changes in device performance could be attributed completely to bulk trapping effects, demonstrating that the effectiveness of the Sc2O3 layers in passivating surface states in the drain-source region was undiminished by the proton irradiation. Sc2O3-passivated AlGaN/HEMTs appear to be attractive candidates for space and terrestrial applications where resistance to high fluxes of ionizing radiation is a criteria.

Biotronics

DTIC Science & Technology

2012-11-01

BLOCKING LAYER IN ORGANIC LIGHT EMITTING DIODES ............................70 2.3.1 Materials Used for the Fabrication of BioLEDs...optical losses. Using a lower molecular weight DNA-based biopolymer as the top and bottom cladding layers in an NLO polymer EO modulator, we were able...application, these new biopolymer -based materials have been used for many types of electronic and photonic applications. Even with growing research

AlGaN UV LED and Photodiodes Radiation Hardness and Space Qualifications and Their Applications in Space Science and High Energy Density Physics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, K. X.

2011-05-31

This presentation provides an overview of robust, radiation hard AlGaN optoelectronic devices and their applications in space exploration & high energy density physics. Particularly, deep UV LED and deep UV photodiodes are discussed with regard to their applications, radiation hardness and space qualification. AC charge management of UV LED satellite payload instruments, which were to be launched in late 2012, is covered.

Electrical characteristics and interface properties of ALD-HfO2/AlGaN/GaN MIS-HEMTs fabricated with post-deposition annealing

NASA Astrophysics Data System (ADS)

Kubo, Toshiharu; Egawa, Takashi

2017-12-01

HfO2/AlGaN/GaN metal-insulator-semiconductor (MIS)-type high electron mobility transistors (HEMTs) on Si substrates were fabricated by atomic layer deposition of HfO2 layers and post-deposition annealing (PDA). The current-voltage characteristics of the MIS-HEMTs with as-deposited HfO2 layers showed a low gate leakage current (I g) despite the relatively low band gap of HfO2, and a dynamic threshold voltage shift (ΔV th) was observed. After PDA above 500 °C, ΔV th was reduced from 2.9 to 0.7 V with an increase in I g from 2.2 × 10-7 to 4.8 × 10-2 mA mm-1. Effects of the PDA on the HfO2 layer and the HfO2/AlGaN interface were investigated by x-ray photoelectron spectroscopy (XPS) using synchrotron radiation. XPS data showed that oxygen vacancies exist in the as-deposited HfO2 layers and they disappeared with an increase in the PDA temperature. These results indicate that the deep electron traps that cause ΔV th are related to the oxygen vacancies in the HfO2 layers.

Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation

NASA Astrophysics Data System (ADS)

Zheng, Xue-Feng; Fan, Shuang; Chen, Yong-He; Kang, Di; Zhang, Jian-Kun; Wang, Chong; Mo, Jiang-Hui; Li, Liang; Ma, Xiao-Hua; Zhang, Jin-Cheng; Hao, Yue

2015-02-01

The transport mechanism of reverse surface leakage current in the AlGaN/GaN high-electron mobility transistor (HEMT) becomes one of the most important reliability issues with the downscaling of feature size. In this paper, the research results show that the reverse surface leakage current in AlGaN/GaN HEMT with SiN passivation increases with the enhancement of temperature in the range from 298 K to 423 K. Three possible transport mechanisms are proposed and examined to explain the generation of reverse surface leakage current. By comparing the experimental data with the numerical transport models, it is found that neither Fowler-Nordheim tunneling nor Frenkel-Poole emission can describe the transport of reverse surface leakage current. However, good agreement is found between the experimental data and the two-dimensional variable range hopping (2D-VRH) model. Therefore, it is concluded that the reverse surface leakage current is dominated by the electron hopping through the surface states at the barrier layer. Moreover, the activation energy of surface leakage current is extracted, which is around 0.083 eV. Finally, the SiN passivated HEMT with a high Al composition and a thin AlGaN barrier layer is also studied. It is observed that 2D-VRH still dominates the reverse surface leakage current and the activation energy is around 0.10 eV, which demonstrates that the alteration of the AlGaN barrier layer does not affect the transport mechanism of reverse surface leakage current in this paper. Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002, 61106106, and 61474091), the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, China (Grant No. ZHD201206), the New Experiment Development Funds for Xidian University, China (Grant No. SY1213), the 111 Project, China (Grant No. B12026), the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry, China, and the Fundamental Research Funds for the Central Universities, China (Grant No. K5051325002).

LiNbO3 Cylinder Fiber

NASA Technical Reports Server (NTRS)

2004-01-01

We have successfully fabricate optical fiber with a thin layer of LiNbO3 at the boundary of the glass core and dear glass cladding. The construction of this fiber is based on our successful Semiconductor Cylinder Fibers (SCF). A schematic representation of a LiNbO3 Cylinder Fiber is shown. These fibers can be used as light modulators, sonar detectors and in other applications. The core diameter of the fiber is sufficiently small compared to the light wavelength and the indices of refraction of the core and cladding glasses are sufficiently close in value so that there is sufficient light at the core cladding boundary to interact with the LiNbO3 layer. This fiber functions best when just a single light mode propagates through the fiber. The idea for a LiNbO3 Cylinder Fiber came from Dr. Tracee Jamison of NASA. The optical properties of LiNbO3 can be changed with strain or the application of an electric field. Thus these fibers can be used as acoustic sensors as for example in a sonar. They can also be used as electric field operated light modulators. However, for this application the fibers would be made with a cross section in the form of a 'D'. The core with its surrounding LiNbO, layer would be close to the flat portion of the 'D' shaped fiber. Two metal contacts would be deposited on the flat portion of the fiber on either side of the core. A voltage applied across these contacts will result in an electric field in the core region that can be used for modulating the optical properties of the LiNbO, layer. To our knowledge this is the first ever LiNbO, Cylinder Fiber made.

LiNbO3 Cylinder Fiber

NASA Technical Reports Server (NTRS)

Kornreich, Philip

2004-01-01

We have successfully fabricate optical fiber with a thin layer of LiNbO3 at the boundary of the glass core and clear glass cladding. The construction of this fiber is based on our successful Semiconductor Cylinder Fibers (SCF). A schematic representation of a LiN bo, Cylinder Fiber. These fibers can be used as light modulators, sonar detectors and in other applications. The core diameter of the fiber is sufficiently small compared to the light wavelength and the indices of refraction of the core and cladding glasses are sufficiently close in value so that there is sufficient light at the core cladding boundary to interact with the LiNbO3 layer. This fiber functions best when just a single light mode propagates through the fiber. The idea for a LiNbO3 Cylinder Fiber came from Dr. Tracee Jamison of NASA. The optical properties of LiNbO3 can be changed with strain or the application of an electric field. Thus these fibers can be used as acoustic sensors as for example in a sonar. They can also be used as electric field operated light modulators. However, for this application the fibers would be made with a cross section in the form of a "D". The core with its surrounding LiNbO, layer would be close to the flat portion of the "D" shaped fiber. Two metal contacts would be deposited on the flat portion of the fiber on either side of the core. A voltage applied across these contacts will result in an electric field in the core region that can be used for modulating the optical properties of the LiNbO3 layer. To our knowledge this is the first ever LiNbO3 Cylinder Fiber made.

Growth of AlGaN under the conditions of significant gallium evaporation: Phase separation and enhanced lateral growth

NASA Astrophysics Data System (ADS)

Mayboroda, I. O.; Knizhnik, A. A.; Grishchenko, Yu. V.; Ezubchenko, I. S.; Zanaveskin, Maxim L.; Kondratev, O. A.; Presniakov, M. Yu.; Potapkin, B. V.; Ilyin, V. A.

2017-09-01

The growth kinetics of AlGaN in NH3 MBE under significant Ga desorption was studied. It was found that the addition of gallium stimulates 2D growth and provides better morphology of films compared to pure AlN. The effect was experimentally observed at up to 98% desorption of the impinging gallium. We found that under the conditions of significant thermal desorption, larger amounts of gallium were retained at lateral boundaries of 3D surface features than at flat terraces because of the higher binding energy of Ga atoms at specific surface defects. The selective accumulation of gallium resulted in an increase in the lateral growth component through the formation of the Ga-enriched AlGaN phase at boundaries of 3D surface features. We studied the temperature dependence of AlGaN growth rate and developed a kinetic model analytically describing this dependence. As the model was in good agreement with the experimental data, we used it to estimate the increase in the binding energy of Ga atoms at surface defects compared to terrace surface sites using data on the Ga content in different AlGaN phases. We also applied first-principles calculations to the thermodynamic analysis of stable configurations on the AlN surface and then used these surface configurations to compare the binding energy of Ga atoms at terraces and steps. Both first-principles calculations and analytical estimations of the experimental results gave similar values of difference in binding energies; this value is 0.3 eV. Finally, it was studied experimentally whether gallium can act as a surfactant in AlN growth by NH3 MBE at elevated temperatures. Gallium application has allowed us to grow a 300 nm thick AlN film with a RMS surface roughness of 2.2 Å over an area of 10 × 10 μm and a reduced density of screw dislocations.

Evolution of AlGaN deep level defects as a function of alloying and compositional grading and resultant impact on electrical conductivity

DOE PAGES

Armstrong, Andrew M.; Allerman, Andrew A.

2017-07-24

AlGaN:Si epilayers with uniform Al compositions of 60%, 70%, 80%, and 90% were grown by metal-organic vapor phase epitaxy along with a compositionally graded, unintentionally doped (UID) AlGaN epilayer with the Al composition varying linearly between 80% and 100%. The resistivity of AlGaN:Si with a uniform composition increased significantly for the Al content of 80% and greater, whereas the graded UID-AlGaN film exhibited resistivity equivalent to 60% and 70% AlGaN:Si owing to polarization-induced doping. Deep level defect studies of both types of AlGaN epilayers were performed to determine why the electronic properties of uniform-composition AlGaN:Si degraded with increased Al content,more » while the electronic properties of graded UID-AlGaN did not. The deep level density of uniform-composition AlGaN:Si increased monotonically and significantly with the Al mole fraction. Conversely, graded-UID AlGaN had the lowest deep level density of all the epilayers despite containing the highest Al composition. These findings indicate that Si doping is an impetus for point defect incorporation in AlGaN that becomes stronger with the increasing Al content. However, the increase in deep level density with the Al content in uniform-composition AlGaN:Si was small compared to the increase in resistivity. This implies that the primary cause for increasing resistivity in AlGaN:Si with the increasing Al mole fraction is not compensation by deep levels but rather increasing activation energy for the Si dopant. As a result, the graded UID-AlGaN films maintained low resistivity because they do not rely on thermal ionization of Si dopants.« less

Evolution of AlGaN deep level defects as a function of alloying and compositional grading and resultant impact on electrical conductivity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Armstrong, Andrew M.; Allerman, Andrew A.

AlGaN:Si epilayers with uniform Al compositions of 60%, 70%, 80%, and 90% were grown by metal-organic vapor phase epitaxy along with a compositionally graded, unintentionally doped (UID) AlGaN epilayer with the Al composition varying linearly between 80% and 100%. The resistivity of AlGaN:Si with a uniform composition increased significantly for the Al content of 80% and greater, whereas the graded UID-AlGaN film exhibited resistivity equivalent to 60% and 70% AlGaN:Si owing to polarization-induced doping. Deep level defect studies of both types of AlGaN epilayers were performed to determine why the electronic properties of uniform-composition AlGaN:Si degraded with increased Al content,more » while the electronic properties of graded UID-AlGaN did not. The deep level density of uniform-composition AlGaN:Si increased monotonically and significantly with the Al mole fraction. Conversely, graded-UID AlGaN had the lowest deep level density of all the epilayers despite containing the highest Al composition. These findings indicate that Si doping is an impetus for point defect incorporation in AlGaN that becomes stronger with the increasing Al content. However, the increase in deep level density with the Al content in uniform-composition AlGaN:Si was small compared to the increase in resistivity. This implies that the primary cause for increasing resistivity in AlGaN:Si with the increasing Al mole fraction is not compensation by deep levels but rather increasing activation energy for the Si dopant. As a result, the graded UID-AlGaN films maintained low resistivity because they do not rely on thermal ionization of Si dopants.« less

A Novel Inter Core-Cladding Lithium Niobate Thin Film Coated Fiber Modulator/Sensor

NASA Technical Reports Server (NTRS)

Jamison, Tracee L.; Komriech, Phillip; Yu, Chung

2004-01-01

A fiber modulator/sensor has been fabricated by depositing a lithium niobate sol-gel thin film between the core and cladding of a fiber preform. The preform is then drawn into 125 micron fiber. The proposed design of lithium niobate cylinder fibers can enhance the existing methodology for detecting sound waves under water utilizing the acoustooptic properties of lithium niobate. Upon application of a stress or strain, light propagating inside the core, according to the principle of total internal reflection, escapes, into the cladding because of the photoelastic boundary layer of lithium niobate. Test results of the lithium niobate fiber reveal a reduction in the 1550 nm, 4mW source with applied tension. The source power from an ordinary quartz fiber under the same stress condition remained invariant to applied tension.

Influence of Laser Power on the Shape of Single Tracks in Scanner Based Laser Wire Cladding

NASA Astrophysics Data System (ADS)

Barroi, A.; Gonçalves, D. Albertazzi; Hermsdorf, J.; Kaierle, S.; Overmeyer, L.

The shape of the cladding tracks is extremely important for producing layers or structures by adding them sequently. This paper shows the influence of the laser power of a diode laser in the range of 500 to 1000 W on the shapes of single tracks in scanner based laser wire cladding. The scanner was used to oscillate the beam perpendiculary to the welding direction. Stainless steel (ER 318 Si) wire with a 0.6 mm diameter was used as deposition material. Height, width, penetration, molten area and weld seam angles of single tracks were obtained from cross-sections at three different positions of each track. The influence of these different positions on the results depends on the traverse speed. The paper discusses this influence in respect to the heat dissipation in the substrate material.

Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ngo, Thi Huong; Gil, Bernard; Valvin, Pierre

2015-09-21

We determine the internal quantum efficiency of strain-balanced AlGaN-InGaN-GaN hetero-structures designed for yellow-amber light emission, by using a recent model based on the kinetics of the photoluminescence decay initiated by Iwata et al. [J. Appl. Phys. 117, 075701 (2015)]. Our results indicate that low temperature internal quantum efficiencies sit in the 50% range and we measure that adding an AlGaN layer increases the internal quantum efficiency from 50% up to 57% with respect to the GaN-InGaN case. More dramatic, it almost doubles from 2.5% up to 4.3% at room temperature.

Emission and reflection spectra from AlxGa1-xN/GaN single heterostructures

NASA Astrophysics Data System (ADS)

Reynolds, D. C.; Hoelscher, J.; Litton, C. W.; Collins, T. C.; Fitch, R.; Via, G. D.; Gillespie, J.; Crespo, A.; Jenkins, T. J.; Saxler, A.

2003-10-01

Emission and reflection spectra from AlGaN/GaN single heterostructures grown on SiC substrates were investigated. Two-dimensional electron gas (2DEG) transitions were observed in both emission and reflection. The transitions are sharp, associated with the excited state of the 2DEG, reflect the conservation of the K-selection rule, and are excitonlike. The transitions are also associated with both the A- and B-valence bands. To verify the origin of the reflection and emission spectra, the top AlGaN layer was removed by reactive ion etching. After etching, only the excitonic reflection and emission spectra associated with GaN were observed.

A high-sensitivity fiber-optic evanescent wave sensor with a three-layer structure composed of Canada balsam doped with GeO2.

PubMed

Zhong, Nianbing; Zhao, Mingfu; Zhong, Lianchao; Liao, Qiang; Zhu, Xun; Luo, Binbin; Li, Yishan

2016-11-15

In this paper, we present a high-sensitivity polymer fiber-optic evanescent wave (FOEW) sensor with a three-layer structure that includes bottom, inter-, and surface layers in the sensing region. The bottom layer and inter-layer are POFs composed of standard cladding and the core of the plastic optical fiber, and the surface layer is made of dilute Canada balsam in xylene doped with GeO2. We examine the morphology of the doped GeO2, the refractive index and composition of the surface layer and the surface luminous properties of the sensing region. We investigate the effects of the content and morphology of the GeO2 particles on the sensitivity of the FOEW sensors by using glucose solutions. In addition, we examine the response of sensors incubated with staphylococcal protein A plus mouse IgG isotype to goat anti-mouse IgG solutions. Results indicate very good sensitivity of the three-layer FOEW sensor, which showed a 3.91-fold improvement in the detection of the target antibody relative to a conventional sensor with a core-cladding structure, and the novel sensor showed a lower limit of detection of 0.2ng/l and a response time around 320s. The application of this high-sensitivity FOEW sensor can be extended to biodefense, disease diagnosis, biomedical and biochemical analysis. Copyright © 2016 Elsevier B.V. All rights reserved.

Refractive Index of III-metal-polar and N-polar AlGaN Waveguides Grown by Metal Organic Chemical Vapor Deposition

DTIC Science & Technology

2013-06-03

traditional birefringent materials is the wide bandgap semiconductor AlGaN. This semiconductor belongs to the 6 mm point group, and thus, has five non...effi- ciency of the SHG structure. As the two different polar surfa- ces incorporate point defects at a different rate during growth,25,26 the...diffraction in a triple axis geometry to determine the c-lattice parameter through the use of the (002) symmetric reflection and relating it to com

Microstructure and Antiwear Property of Laser Cladding Ni–Co Duplex Coating on Copper

PubMed Central

Wang, Yiyong; Liang, Zhipeng; Zhang, Junwei; Ning, Zhe; Jin, Hui

2016-01-01

Ni–Co duplex coatings were cladded onto Cu to improve the antiwear properties of Cu products. Prior to laser cladding, n-Al2O3/Ni layers were introduced as interlayers between laser cladding coatings and Cu substrates to improve the laser absorptivity of these substrates and ensure defect-free laser cladding coatings. The structure and morphology of the coatings were characterized by scanning electron microscopy and optical microscopy, and the phases of the coatings were analyzed by X-ray diffraction. Their hardness was measured using a microhardness tester. Experimental results showed that defect-free composite coatings were obtained and that the coatings were metallurgically bonded to the substrates. The surface of the Ni–Co duplex coatings comprised a Co-based solid solution, Cr7C3, (Fe,Ni)23C6, and other strengthening phases. The microhardness and wear resistance of the duplex coatings were significantly improved compared with the Cu substrates. The average microhardness of the cladded coatings was 845.6 HV, which was approximately 8.2 times greater than that of the Cu substrates (102.6 HV). The volume loss of the Cu substrates was approximately 7.5 times greater than that of the Ni–Co duplex coatings after 60 min of sliding wear testing. The high hardness of and lack of defects in the Ni–Co duplex coatings reduced the plastic deformation and adhesive wear of the Cu substrates, resulting in improved wear properties. PMID:28773755

Method of making and structure for monolithic optical circuits

NASA Technical Reports Server (NTRS)

Evanchuk, Vincent L. (Inventor)

1983-01-01

A method for making monolithic optical circuits, with related optical devices as required or desired, on a supporting surface (10) consists of coating the supporting surface with reflecting metal or cladding resin, spreading a layer of liquid radiation senstivie plastic (12) on the surface, exposing the liquid plastic with a mask (14) to cure it in a desired pattern of light conductors (16, 18, 20), washing away the unexposed liquid plastic, and coating the conductors thus formed with reflective metal or cladding resin. The index of refraction for the cladding (22) is selected to be lower than for the conductors so that light in the conductors will be reflected by the interface with the cladding. For multiple level conductors, as where one conductor must cross over another, the process may be repeated to fabricate a bridge with columns (24, 26) of conductors to the next level, and conductor (28) between the columns. For more efficient transfer of energy over the bridge, faces at 45.degree. may be formed to reflect light up and across the bridge.

Thermal effects on transducer material for heat assisted magnetic recording application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ji, Rong, E-mail: Ji-Rong@dsi.a-star.edu.sg; Xu, Baoxi; Cen, Zhanhong

2015-05-07

Heat Assisted Magnetic Recording (HAMR) is a promising technology for next generation hard disk drives with significantly increased data recording capacities. In HAMR, an optical near-field transducer (NFT) is used to concentrate laser energy on a magnetic recording medium to fulfill the heat assist function. The key components of a NFT are transducer material, cladding material, and adhesion material between the cladding and the transducer materials. Since transducer materials and cladding materials have been widely reported, this paper focuses on the adhesion materials between the Au transducer and the Al{sub 2}O{sub 3} cladding material. A comparative study for two kindsmore » of adhesion material, Ta and Cr, has been conducted. We found that Ta provides better thermal stability to the whole transducer than Cr. This is because after thermal annealing, chromium forms oxide material at interfaces and chromium atoms diffuse remarkably into the Au layer and react with Au to form Au alloy. This study also provides insights on the selection of adhesion material for HAMR transducer.« less

Design of high birefringence and low confinement loss photonic crystal fibers with five rings hexagonal and octagonal symmetry air-holes in fiber cladding

NASA Astrophysics Data System (ADS)

Yang, Kuang-Yu; Chau, Yuan-Fong; Huang, Yao-Wei; Yeh, Hsiao-Yu; Ping Tsai, Din

2011-05-01

We present a new cladding design for high birefringence and low confinement loss photonic crystal fibers (PCFs) using a full-vector finite element method with anisotropic perfectly matched boundary layer. Six cases of PCFs are proposed for comparison. The proposed cladding in PCFs is composed of five rings of air-holes. Air-holes on the inner two rings are arranged in a hexagonal symmetry whereas, air-holes on the outer three rings are arranged in an octagonal symmetry in fused silica. Results show that suitable design air-holes on the inner two rings will significantly increase the birefringence, whereas, elliptical holes with major axis along x-axis on the outer three rings will provide strong confinement ability. The highest modal birefringence and lowest confinement loss of our proposed case five structure at the excitation wavelength of λ = 1550 nm can be achieved at a magnitude of 0.87 × 10-2 and less than 0.01 dB/km with only five rings of air-holes in fiber cladding.

Thermochemical Compatibility and Oxidation Resistance of Advanced LWR Fuel Cladding

DOE PAGES

Besmann, T. M.; Yamamoto, Y.; Unocic, K. A.

2016-06-21

We assessed the thermochemical compatibility of potential replacement cladding materials for zirconium alloys in light water reactors. Considered were FeCrAl steel (similar to Kanthal APMT), Nb-1%Zr (similar to PWC-11), and a hybrid SiC-composite with a metallic barrier layer. The niobium alloy was also seen as requiring an oxidation protective layer, and a diffusion silicide was investigated. Metallic barrier layers for the SiC-composite reviewed included a FeCrAl alloy, Nb-1%Zr, and chromium. Thermochemical calculations were performed to determine oxidation behavior of the materials in steam, and for hybrid SiC-composites possible interactions between the metallic layer and SiC. Additionally, experimental exposures of SiC-alloymore » reaction couples at 673K, 1073K, and 1273K for 168 h in an inert atmosphere were made and microanalysis performed. Whereas all materials were determined to oxidize under higher oxygen partial pressures in the steam environment, these varied by material with expected protective oxides forming. Finally, the computed and experimental results indicate the formation of liquid phase eutectic in the FeCrAl-SiC system at the higher temperatures.« less

Investigation of diffusional interaction between P91 grade ferritic steel and Fe-15 wt.%B alloy and study of kinetics of boride formation at high temperature

NASA Astrophysics Data System (ADS)

Rai, Arun Kumar; Vijayashanthi, N.; Tripathy, H.; Hajra, R. N.; Raju, S.; Murugesan, S.; Saroja, S.

2017-11-01

In the present study, the feasibility of employing the indigenously developed ferroboron alloy (Fe-15 wt.%B) as an alternate neutron shield material in combination with 9Cr-based ferritic steel (P91) clad in future Indian fast breeder reactors (FBR), has been investigated from a metallurgical perspective. Towards this goal, a series of diffusion couple experiments have been conducted at three different temperatures namely, 600, 700 and 800 °C for time durations up to 5000 h. The thickness of interaction layer has been monitored using standard metallographic procedures. The experiments revealed that ferroboron/P91 combination exhibited a tendency to form complex intermetallic borides at the interface. The structural and microstructural characterization of the interface confirmed that the reaction layer consists predominantly of borides of Fe and Cr of type FeB, Fe2B, (Fe,Cr)2B and (Fe,Cr)B. The measured variation of interaction layer thickness as a function of time and temperature have been modelled in terms of diffusion mediated interaction. The growth kinetics of borided layer has followed the parabolic law at each temperature, and the apparent activation energy for boride layer formation is found to be of the order of 115 kJ mol-1. This indicates that the kinetics of boriding could be governed by diffusion of B into the P91 matrix. Based on the findings of present study, an extrapolative estimate of the clad attack thickness at 550 °C for 60 years of operating time has been made and it turns out to be 210 ± 15 μm, which is less than the clad thickness of FBR shielding subassembly (4 mm) [1]. Thus, this study confirms that at testing temperatures from 550 to 600 °C, the ferroboron/P91 steel combination can be safely employed for shielding subassembly applications in fast reactors.

The metalorganic chemical vapor deposition of III-V nitrides for optoelectronic device applications

NASA Astrophysics Data System (ADS)

Grudowski, Paul Alexander

Nitride-based light-emitting diodes (LEDs) and laser diodes are important for large-area LED displays, flat-panel displays, traffic signals, and optical data storage, due to their characteristic ultraviolet and visible light emission. However, much of the research and development addressing material related problems is recent. The room-temperature continuous wave (CW) operation of nitride-based laser diodes remains a major milestone because the material quality requirements for these devices are extremely high. This study investigates nitride material development by the metalorganic chemical vapor deposition (MOCVD) and characterization of GaN, AlGaN, and InGaN, and by qualifying these materials with fabricated devices. The ultimate goal was to develop a working laser diode. The nitride epitaxial films were characterized by 300K Hall effect, x-ray diffraction (XRD), photoluminescence (PL), cathodoluminescence (CL), secondary ion mass spectroscopy (SIMS), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). GaN grown heteroepitaxially on (0001) sapphire substrates was first optimized. A low-temperature GaN nucleation layer was developed that gave subsequent high-temperature GaN layers with low background carrier concentrations (n < 1×10sp{17}\\ cmsp{-3}). Intentional p-type hole concentrations up to 2× 10sp{18} cmsp{-3} and n-type electron concentrations up to 1× 10sp{19} cmsp{-3} were achieved at 300K with magnesium and silicon, respectively. The ternary alloy Insb{x}Gasb{1-x}N was grown with indium compositions up to x = 0.25. These films exhibited strong and narrow 300K PL bandedge peaks. Multiple-quantum-well structures with Insb{0.13}Gasb{0.87}N wells and Insb{0.03}Gasb{0.97}N barriers were grown and gave enhanced PL intensity compared to single InGaN layers. Modulation-doped MQW's produced enhanced PL intensity compared to uniformly-doped MQW's. 300K photopumping experiments produced stimulated emission from a five-period MQW. Light-emitting device structures comprised of InGaN MQW active regions and p-type and n-type GaN contact layers and AlGaN confinement layers were grown and fabricated. LED's showed bright emission at a wavelength of 400 nm. While optically pumped lasers were demonstrated, no injection lasing action was achieved in these devices. GaN grown by selective area lateral epitaxial overgrowth (SALEO) has reduced dislocation defect density and, therefore, may prove to be a promising substrate for nearly defect-free device structures. Plan-view and cross-sectional CL was used to compare spatial inhomogeneities in the bandedge luminescence.

Simultaneous RGB lasing from a single-chip polymer device.

PubMed

Yamashita, Kenichi; Takeuchi, Nobutaka; Oe, Kunishige; Yanagi, Hisao

2010-07-15

This Letter describes the fabrication and operation of a single-chip white-laser device. The laser device has a multilayered structure consisting of three laser layers. Each laser layer comprises polymer claddings and a waveguide core doped with organic dye. In each laser layer, grating corrugations were fabricated by UV-nanoimprint lithography that act as distributed-feedback cavity structures. Under optical pumping, lasing output with red, green, and blue colors was simultaneously obtained from the sample edge.

Ohmic contacts to Al-rich AlGaN heterostructures

DOE PAGES

Douglas, E. A.; Reza, S.; Sanchez, C.; ...

2017-06-06

Due to the ultra-wide bandgap of Al-rich AlGaN, up to 5.8 eV for the structures in this study, obtaining low resistance ohmic contacts is inherently difficult to achieve. A comparative study of three different fabrication schemes is presented for obtaining ohmic contacts to an Al-rich AlGaN channel. Schottky-like behavior was observed for several different planar metallization stacks (and anneal temperatures), in addition to a dry-etch recess metallization contact scheme on Al 0.85Ga 0.15N/Al 0.66Ga 0.34N. However, a dry etch recess followed by n +-GaN regrowth fabrication process is reported as a means to obtain lower contact resistivity ohmic contacts onmore » a Al 0.85Ga 0.15N/Al 0.66Ga 0.34N heterostructure. In conclusion, specific contact resistivity of 5×10 -3 Ω cm 2 was achieved after annealing Ti/Al/Ni/Au metallization.« less

Superconductivity and tunneling-junctions in epitaxial Nb2N/AlN/GaN heterojunctions

NASA Astrophysics Data System (ADS)

Yan, Rusen; Han, Yimo; Khalsa, Guru; Vishwanath, Suresh; Katzer, Scott; Nepal, Neeraj; Downey, Brian; Muller, David; Meyer, David; Xing, Grace; Jena, Debdeep; ECE Collaboration; AEP Collaboration; MSE Collaboration; NRL Collaboration

We have discovered that ultrathin highly crystalline Nb2N layers grown epitaxially (by MBE) on SiC and integrated with AlN and GaN heterostructures are high-quality superconductors with transition temperatures from 9-13 K. The out-of-plane critical magnetic fields are found to be 14 Tesla range, and the critical current density is 4*1E5 A/cm2 at 5 K. Preliminary in-plane magnetotransport measurements on 4 nm thin films indicate a significantly high critical magnetic field exceeding 40 T. Since Nb2N superconducting layers can be epitaxially integrated with GaN, AlN, and AlGaN, we also demonstrate Nb2N superconductivity in a layer located beneath an N-polar GaN high-electron-mobility transistor (HEMT) heterostructure that uses a 2DEG channel as a microwave amplifier; such a demonstration illustrates the potential emergence of a new paradigm where an all-epitaxial III-N/Nb2N platform could serve as the basis for microwave qubits to power quantum computation as well as quantum communications.

Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsatsulnikov, A. F., E-mail: andrew@beam.ioffe.ru; Lundin, W. V.; Sakharov, A. V.

2016-09-15

The epitaxial growth of InAlN layers and GaN/AlN/InAlN heterostructures for HEMTs in growth systems with horizontal reactors of the sizes 1 × 2', 3 × 2', and 6 × 2' is investigated. Studies of the structural properties of the grown InAlN layers and electrophysical parameters of the GaN/AlN/InAlN heterostructures show that the optimal quality of epitaxial growth is attained upon a compromise between the growth conditions for InGaN and AlGaN. A comparison of the epitaxial growth in different reactors shows that optimal conditions are realized in small-scale reactors which make possible the suppression of parasitic reactions in the gas phase.more » In addition, the size of the reactor should be sufficient to provide highly homogeneous heterostructure parameters over area for the subsequent fabrication of devices. The optimal compositions and thicknesses of the InAlN layer for attaining the highest conductance in GaN/AlN/InAlN transistor heterostructures.« less

Preparation and characterization of laser cladding wollastonite derived bioceramic coating on titanium alloy.

PubMed

Li, Huan-cai; Wang, Dian-gang; Chen, Chuan-zhong; Weng, Fei; Shi, Hua

2015-09-25

The bioceramic coating is fabricated on titanium alloy (Ti6Al4V) by laser cladding the preplaced wollastonite (CaSiO3) powders. The coating on Ti6Al4V is characterized by x-ray diffraction, scanning electron microscopy coupled with energy dispersive spectroscopy, and attenuated total reflection Fourier-transform infrared. The interface bonding strength is measured using the stretching method using an RGD-5-type electronic tensile machine. The microhardness distribution of the cross-section is determined using an indentation test. The in vitro bioactivity of the coating on Ti6Al4V is evaluated using the in vitro simulated body fluid (SBF) immersion test. The microstructure of the laser cladding sample is affected by the process parameters. The coating surface is coarse, accidented, and microporous. The cross-section microstructure of the ceramic layer from the bottom to the top gradually changes from cellular crystal, fine cellular-dendrite structure to underdeveloped dendrite crystal. The coating on Ti6Al4V is composed of CaTiO3, CaO, α-Ca2SiO4, SiO2, and TiO2. After soaking in the SBF solution, the calcium phosphate layer is formed on the coating surface.

Growth of GaN nanostructures with polar and semipolar orientations for the fabrication of UV LEDs

NASA Astrophysics Data System (ADS)

Brault, Julien; Damilano, Benjamin; Courville, Aimeric; Leroux, Mathieu; Kahouli, Abdelkarim; Korytov, Maxim; Vennéguès, Philippe; Randazzo, Gaetano; Chenot, Sébastien; Vinter, Borge; De Mierry, Philippe; Massies, Jean; Rosales, Daniel; Bretagnon, Thierry; Gil, Bernard

2014-03-01

(Al,Ga)N light emitting diodes (LEDs), emitting over a large spectral range from 360 nm (GaN) down to 210 nm (AlN), have been successfully fabricated over the last decade. Clear advantages compared to the traditional mercury lamp technology (e.g. compactness, low-power operation, lifetime) have been demonstrated. However, LED efficiencies still need to be improved. The main problems are related to the structural quality and the p-type doping efficiency of (Al,Ga)N. Among the current approaches, GaN nanostructures, which confine carriers along both the growth direction and the growth plane, are seen as a solution for improving the radiative recombination efficiency by strongly reducing the impact of surrounding defects. Our approach, based on a 2D - 3D growth mode transition in molecular beam epitaxy, can lead to the spontaneous formation of GaN nanostructures on (Al,Ga)N over a broad range of Al compositions. Furthermore, the versatility of the process makes it possible to fabricate nanostructures on both (0001) oriented "polar" and (11 2 2) oriented "semipolar" materials. We show that the change in the crystal orientation has a strong impact on the morphological and optical properties of the nanostructures. The influence of growth conditions are also investigated by combining microscopy (SEM, TEM) and photoluminescence techniques. Finally, their potential as UV emitters will be discussed and the performances of GaN / (Al,Ga)N nanostructure-based LED demonstrators are presented.

Methods and systems for detecting gas flow by photoacoustic signal generation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choudhury, Niloy; Challener, William Albert

A method for the detection of a gas flowing from a location in a structure is described. A hollow-core optical fiber is placed in a position adjacent the structure. The fiber includes a sound-conductive cladding layer; and further includes at least one aperture extending into its cross-sectional diameter. A beam of pulsed, optical is transmitted into the fiber with a tunable laser. The optical energy is characterized by a wavelength that can be absorbed by the gas that flows into the fiber through the aperture. This causes a temperature fluctuation in the region of gas absorption, which in turn generatesmore » an acoustic wave in the absorption region. The acoustic wave travels through the cladding layer, and can be detected with a microphone, so as to provide the location of gas flow, based on the recorded position and movement of the acoustic wave. A related system is also described.« less

[INVITED] Design of turn around point long period fiber grating sensor with Au-nanoparticle self monolayer

NASA Astrophysics Data System (ADS)

Bandyopadhyay, Sankhyabrata; Basumallick, Nandini; Bysakh, Sandip; Dey, Tanoy Kumar; Biswas, Palas; Bandyopadhyay, Somnath

2018-06-01

In this paper studies on the design and fabrication of a long period fiber grating (LPFG) with a self mono layer of gold nanoparticle (AuNP) has been presented. Refractive index (RI) sensitivity of a dispersed cladding mode (DCM) near turn around point (TAP) of its phase matching curve (PMC) has been investigated with and also without AuNP coated LPFG. The typical role played by the intermediate layer of AuNP on the effective index and thus on the sensitivity of the cladding mode to the surrounding RI has also been explored by carrying out coupled mode analysis of the requisite multilayer waveguide. Deposition of AuNP enhanced the sensitivity by more than a factor of 2. Measured sensitivity was found to be ∼3928 nm/refractive index unit (RIU) in the range of 1.3333-1.3428.

Optical analysis of AlGaInP laser diodes with real refractive index guided self-aligned structure

NASA Astrophysics Data System (ADS)

Xu, Yun; Zhu, Xiaopeng; Ye, Xiaojun; Kang, Xiangning; Cao, Qing; Guo, Liang; Chen, Lianghui

2004-05-01

Optical modes of AlGaInP laser diodes with real refractive index guided self-aligned (RISA) structure were analyzed theoretically on the basis of two-dimension semivectorial finite-difference methods (SV-FDMs) and the computed simulation results were presented. The eigenvalue and eigenfunction of this two-dimension waveguide were obtained and the dependence of the confinement factor and beam divergence angles in the direction of parallel and perpendicular to the pn junction on the structure parameters such as the number of quantum wells, the Al composition of the cladding layers, the ridge width, the waveguide thickness and the residual thickness of the upper P-cladding layer were investigated. The results can provide optimized structure parameters and help us design and fabricate high performance AlGaInP laser diodes with a low beam aspect ratio required for optical storage applications.

Elemental profiling of laser cladded multilayer coatings by laser induced breakdown spectroscopy and energy dispersive X-ray spectroscopy

NASA Astrophysics Data System (ADS)

Lednev, V. N.; Sdvizhenskii, P. A.; Filippov, M. N.; Grishin, M. Ya.; Filichkina, V. A.; Stavertiy, A. Ya.; Tretyakov, R. S.; Bunkin, A. F.; Pershin, S. M.

2017-09-01

Multilayer tungsten carbide wear resistant coatings were analyzed by laser induced breakdown spectroscopy (LIBS) and energy dispersive X-ray (EDX) spectroscopy. Coaxial laser cladding technique was utilized to produce tungsten carbide coating deposited on low alloy steel substrate with additional inconel 625 interlayer. EDX and LIBS techniques were used for elemental profiling of major components (Ni, W, C, Fe, etc.) in the coating. A good correlation between EDX and LIBS data was observed while LIBS provided additional information on light element distribution (carbon). A non-uniform distribution of tungsten carbide grains along coating depth was detected by both LIBS and EDX. In contrast, horizontal elemental profiling showed a uniform tungsten carbide particles distribution. Depth elemental profiling by layer-by-layer LIBS analysis was demonstrated to be an effective method for studying tungsten carbide grains distribution in wear resistant coating without any sample preparation.

Saturation of the junction voltage in GaN-based laser diodes

NASA Astrophysics Data System (ADS)

Feng, M. X.; Liu, J. P.; Zhang, S. M.; Liu, Z. S.; Jiang, D. S.; Li, Z. C.; Wang, F.; Li, D. Y.; Zhang, L. Q.; Wang, H.; Yang, H.

2013-05-01

Saturation of the junction voltage in GaN-based laser diodes (LDs) is studied. It is found that there is a bump above the lasing transition in the I(dV/dI)-I curve, instead of a dip as that for GaAs-based LDs. The bump in I(dV/dI)-I curve moves to higher currents along with the lasing threshold. A model considering ambipolar conduction and electron overflow into p-AlGaN cladding layer due to poor carrier confinement in active region is used to explain the anomaly. The characteristic temperature of GaN-based LD is obtained by fitting threshold currents determined from I(dV/dI)-I curves. Moreover, it is found that GaN-based LDs show characteristics with a nonlinear series resistance, which may be due to the electron overflow into p-AlGaN cladding layer and the enhanced activation of Mg acceptors.

Parameter analysis of a photonic crystal fiber with raised-core index profile based on effective index method

NASA Astrophysics Data System (ADS)

Seraji, Faramarz E.; Rashidi, Mahnaz; Khasheie, Vajieh

2006-08-01

Photonic crystal fibers (PCFs) with a stepped raised-core profile and one layer equally spaced holes in the cladding are analyzed. Using effective index method and considering a raised step refractive index difference between the index of the core and the effective index of the cladding, we improve the characteristic parameters such as numerical aperture and V-parameter, and reduce its bending loss to about one tenth of a conventional PCF. Implementing such a structure in PCFs may be one step forward to achieve low loss PCFs for communication applications.

Fabrication of polyaniline-HCl cladding modified fiber optic intrinsic biosensor for glucose detection

NASA Astrophysics Data System (ADS)

Pahurkar, Vikas; Tamgadge, Yuoraj; Muley, Gajanan

2016-05-01

In the present study, we have fabricated and studied response of cladding modified fiber optic intrinsic glucose biosensor (FOIGB). The optical fiber was used as a light transforming waveguide and sensing element fabricated over it by applying a thin layer of polymer. The cladding of the sensor was modified with the polyaniline-hydrochloric acid (PANI-HCl) polymer matrix. The PANI-HCl matrix provides an amorphous morphology useful to immobilize glucose oxidase (GOx) biomolecules through cross-linking technique via glutaraldehyde. The present sensor was used to detect the glucose analyte in the solution. In the sensing response study of FOIGB toward glucose, novel modal power distribution (MPD) technique was used. The reaction between GOx and glucose changes the optical properties of prepared FOIGB and hence modify MPD at output as a function of glucose concentration. The nature and surface morphology of PANI-HCl matrix has been studied.

Investigation on wear resistance and corrosion resistance of electron beam cladding co-alloy coating on Inconel617

NASA Astrophysics Data System (ADS)

Liu, Hailang; Zhang, Guopei; Huang, Yiping; Qi, Zhengwei; Wang, Bo; Yu, Zhibiao; Wang, Dezhi

2018-04-01

To improve surface properties of Inconel 617 alloy (referred to as 617 alloy), co-alloy coating metallurgically bonded to substrate was prepared on the surface of 617 alloy by electron beam cladding. The microstructure, phase composition, microhardness, tribological properties and corrosion resistance of the coatings were investigated. The XRD results of the coatings reinforced by co-alloy (Co800) revealed the presence of γ-Co, CoCx and Cr23C6 phase as matrix and new metastable phases of Cr2Ni3 and Co3Mo2Si. These hypoeutectic structures contain primary dendrites and interdendritic eutectics. The metallurgical bonding forms well between the cladding layer and the matrix of 617 alloy. In most studied conditions, the co-alloy coating displays a better hardness, tribological performance, i.e., lower coefficient of frictions and wear rates, corrosion resistance in 1 mol L‑1 HCl solution, than the 617 alloy.

Defect structure of epitaxial layers of III nitrides as determined by analyzing the shape of X-ray diffraction peaks

NASA Astrophysics Data System (ADS)

Kyutt, R. T.

2017-04-01

The shape of X-ray diffraction epitaxial layers with high dislocation densities has been studied experimentally. Measurements with an X-ray diffractometer were performed in double- and triple-crystal setups with both Cu K α and Mo K α radiation. Epitaxial layers (GaN, AlN, AlGaN, ZnO, etc.) with different degrees of structural perfection grown by various methods on sapphire, silicon, and silicon carbide substrates have been examined. The layer thickness varied in the range of 0.5-30 μm. It has been found that the center part of peaks is well approximated by the Voigt function with different Lorentz fractions, while the wing intensity drops faster and may be represented by a power function (with the index that varies from one structure to another). A well-marked dependence on the ordering of dislocations was observed. The drop in intensity in the majority of structures with a regular system and regular threading dislocations was close to the theoretically predicted law Δθ-3; the intensity in films with a chaotic distribution decreased much faster. The dependence of the peak shape on the order of reflection, the diffraction geometry, and the epitaxial layer thickness was also examined.

Surface photovoltage studies of p-type AlGaN layers after reactive-ion etching

NASA Astrophysics Data System (ADS)

McNamara, J. D.; Phumisithikul, K. L.; Baski, A. A.; Marini, J.; Shahedipour-Sandvik, F.; Das, S.; Reshchikov, M. A.

2016-10-01

The surface photovoltage (SPV) technique was used to study the surface and electrical properties of Mg-doped, p-type AlxGa1-xN (0.06 < x < 0.17) layers. SPV measurements reveal significant deviation from previous SPV studies on p-GaN:Mg thin films and from the predictions of a thermionic model for the SPV behavior. In particular, the SPV of the p-AlGaN:Mg layers exhibited slower-than-expected transients under ultraviolet illumination and delayed restoration to the initial dark value. The slow transients and delayed restorations can be attributed to a defective surface region which interferes with normal thermionic processes. The top 45 nm of the p-AlGaN:Mg layer was etched using a reactive-ion etch which caused the SPV behavior to be substantially different. From this study, it can be concluded that a defective, near-surface region is inhibiting the change in positive surface charge by allowing tunneling or hopping conductivity of holes from the bulk to the surface, or by the trapping of electrons traveling to the surface by a high concentration of defects in the near-surface region. Etching removes the defective layer and reveals a region of presumably higher quality, as evidenced by substantial changes in the SPV behavior.

Integrated Broadband Quantum Cascade Laser

NASA Technical Reports Server (NTRS)

Mansour, Kamjou (Inventor); Soibel, Alexander (Inventor)

2016-01-01

A broadband, integrated quantum cascade laser is disclosed, comprising ridge waveguide quantum cascade lasers formed by applying standard semiconductor process techniques to a monolithic structure of alternating layers of claddings and active region layers. The resulting ridge waveguide quantum cascade lasers may be individually controlled by independent voltage potentials, resulting in control of the overall spectrum of the integrated quantum cascade laser source. Other embodiments are described and claimed.

Hydride reorientation and its impact on ambient temperature mechanical properties of high burn-up irradiated and unirradiated recrystallized Zircaloy-2 nuclear fuel cladding with an inner liner

NASA Astrophysics Data System (ADS)

Auzoux, Q.; Bouffioux, P.; Machiels, A.; Yagnik, S.; Bourdiliau, B.; Mallet, C.; Mozzani, N.; Colas, K.

2017-10-01

Precipitation of radial hydrides in zirconium-based alloy cladding concomitant with the cooling of spent nuclear fuel during dry storage can potentially compromise cladding integrity during its subsequent handling and transportation. This paper investigates hydride reorientation and its impact on ductility in unirradiated and irradiated recrystallized Zircaloy-2 cladding with an inner liner (cladding for boiling water reactors) subjected to hydride reorientation treatments. Cooling from 400 °C, hydride reorientation occurs in recrystallized Zircaloy-2 with liner at a lower effective stress in irradiated samples (below 40 MPa) than in unirradiated specimens (between 40 and 80 MPa). Despite significant hydride reorientation, unirradiated recrystallized Zircaloy-2 with liner cladding containing ∼200 wppm hydrogen shows a high diametral strain at fracture (>15%) during burst tests at ambient temperature. This ductile behavior is due to (1) the lower yield stress of the recrystallized cladding materials in comparison to hydride fracture strength (corrected by the compression stress arising from the precipitation) and (2) the hydride or hydrogen-depleted zone as a result of segregation of hydrogen into the liner layer. In irradiated Zircaloy-2 with liner cladding containing ∼340 wppm hydrogen, the conservation of some ductility during ring tensile tests at ambient temperature after reorientation treatment at 400 °C with cooling rates of ∼60 °C/h is also attributed to the existence of a hydride-depleted zone. Treatments at lower cooling rates (∼6 °C/h and 0.6 °C/h) promote greater levels of hydrogen segregation into the liner and allow for increased irradiation defect annealing, both of which result in a significant increase in ductility. Based on this investigation, given the very low cooling rates typical of dry storage systems, it can be concluded that the thermal transients associated with dry storage should not degrade, and more likely should actually improve, ductility of recrystallized Zircaloy-2 cladding with inner liner with such hydrogen content.

[The experiment research on solution refractive index sensor based on tilted fiber Bragg grating].

PubMed

Jiang, Qi; Lü, Dan-Dan; Yu, Ming-Hao; Kang, Li-Min; Ouyang, Jun

2013-12-01

The present paper analyzes the sensor's basic principle of the bare tilted fiber Bragg grating (TFBG) and surface plasmon resonance sensor (SPR) that deposited nanoscale gold-coating on the surface of the cladding. We simulated the transmission spectrums and some order cladding mode of TFBG in different concentration solutions by Integration and optical fiber grating software OptiGrating. So by the graphic observation and data analysis, a preliminary conclusion was got that in a certain sensing scope, the cladding modes of TFBG shift slightly to right with the increasing the solution refractive index(SRI),and the relation between resonance peak caused by the coupling of core mode and a certain cladding mode and the SRI was linear. Then the 45 nm thick gold coating was deposited on the surface of the TFBG cladding in a small-scale sputtering chamber KYKY SBC-12, and thermal field scanning electron microscopy presents that the effect of gold-coating was satisfactory to a certain extent in terms of microscopic level. The refractive index(RI) sensing experiments of different concentration solutions of NaCI, MgCI2, CaCI2 were carried out using bare and gold deposited TFBG. The RI sensing characteristics of both bare and gold deposited TFBGs respectively were studied by experiments. Meanwhile, it proved the conclusion that the cladding modes of TFBG drifted to right gradually when the SRI was increasing and the relations between resonance peak caused by the coupling of core mode and a certain cladding mode and the SRI were linear. And by quantitative analysis, we know that SPR sensor with the deposited namoscale gold layer on the surface of cladding enhanced the RI sensitivity dramatically by 2 to 500 nm RIU-1 which is 200 to 300 times larger than that of the bare tilted fiber Bragg grating approximately. The degrees of linear fittings of resonance peak caused by the coupling of core mode and a certain cladding mode and SRI of bare and gold-coating deposited SPR sensor are very good and both of them reach up to more than 0. 99.

Dual Band Deep Ultraviolet AlGaN Photodetectors

NASA Technical Reports Server (NTRS)

Aslam, S.; Miko, L.; Stahle, C.; Franz, D.; Pugel, D.; Guan, B.; Zhang, J. P.; Gaska, R.

2007-01-01

We report on the design, fabrication and characterization of a back-illuminated voltage bias selectable dual-band AlGaN UV photodetector. The photodetector can separate UVA and W-B band radiation by bias switching a two terminal n-p-n homojunction structure that is fabricated in the same pixel. When a forward bias is applied between the top and bottom electrodes, the detector can sense UV-A and reject W-B band radiation. Alternatively, under reverse bias, the photodetector can sense UV-B and reject UV-A band radiation.

Development of Self-Healing Zirconium-Silicide Coatings for Improved Performance Zirconium-Alloy Fuel Cladding

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sridharan, Kumar; Mariani, Robert; Bai, Xianming

Zirconium-alloy fuel claddings have been used successfully in Light Water Reactors (LWR) for over four decades. However, under high temperature accident conditions, zirconium-alloys fuel claddings exhibit profuse exothermic oxidation accompanied by release of hydrogen gas due to the reaction with water/steam. Additionally, the ZrO 2 layer can undergo monoclinic to tetragonal to cubic phase transformations at high temperatures which can induce stresses and cracking. These events were unfortunately borne out in the Fukushima-Daiichi accident in in Japan in 2011. In reaction to such accident, protective oxidation-resistant coatings for zirconium-alloy fuel claddings has been extensively investigated to enhance safety margins inmore » accidents as well as fuel performance under normal operation conditions. Such surface modification could also beneficially affect fuel rod heat transfer characteristics. Zirconium-silicide, a candidate coating material, is particularly attractive because zirconium-silicide coating is expected to bond strongly to zirconium-alloy substrate. Intermetallic compound phases of zirconium-silicide have high melting points and oxidation of zirconium silicide produces highly corrosion resistant glassy zircon (ZrSiO 4) and silica (SiO 2) which possessing self-healing qualities. Given the long-term goal of developing such coatings for use with nuclear reactor fuel cladding, this work describes results of oxidation and corrosion behavior of bulk zirconium-silicide and fabrication of zirconium-silicide coatings on zirconium-alloy test flats, tube configurations, and SiC test flats. In addition, boiling heat transfer of these modified surfaces (including ZrSi 2 coating) during clad quenching experiments is discussed in detail.« less

Corrosion monitoring along infrastructures using distributed fiber optic sensing

NASA Astrophysics Data System (ADS)

Alhandawi, Khalil B.; Vahdati, Nader; Shiryayev, Oleg; Lawand, Lydia

2016-04-01

Pipeline Inspection Gauges (PIGs) are used for internal corrosion inspection of oil pipelines every 3-5 years. However, between inspection intervals, rapid corrosion may occur, potentially resulting in major accidents. The motivation behind this research project was to develop a safe distributed corrosion sensor placed inside oil pipelines continuously monitoring corrosion. The intrinsically safe nature of light provided motivation for researching fiber optic sensors as a solution. The sensing fiber's cladding features polymer plastic that is chemically sensitive to hydrocarbons within crude oil mixtures. A layer of metal, used in the oil pipeline's construction, is deposited on the polymer cladding, which upon corrosion, exposes the cladding to surrounding hydrocarbons. The hydrocarbon's interaction with the cladding locally increases the cladding's refractive index in the radial direction. Light intensity of a traveling pulse is reduced due to local reduction in the modal capacity which is interrogated by Optical Time Domain Reflectometery. Backscattered light is captured in real-time while using time delay to resolve location, allowing real-time spatial monitoring of environmental internal corrosion within pipelines spanning large distances. Step index theoretical solutions were used to calculate the power loss due changes in the intensity profile. The power loss is translated into an attenuation coefficient characterizing the expected OTDR trace which was verified against similar experimental results from the literature. A laboratory scale experiment is being developed to assess the validity of the model and the practicality of the solution.

Phase Evolution and Properties of Al2CrFeNiMo x High-Entropy Alloys Coatings by Laser Cladding

NASA Astrophysics Data System (ADS)

Wu, Wei; Jiang, Li; Jiang, Hui; Pan, Xuemin; Cao, Zhiqiang; Deng, Dewei; Wang, Tongmin; Li, Tingju

2015-10-01

A series of Al2CrFeNiMo x ( x = 0 to 2.0 at.%) high-entropy alloys coatings was synthesized on stainless steel by laser cladding. The effect of Mo content on the microstructures and mechanical properties of Al2CrFeNiMo x coatings was studied. The results show that the laser clad layer consists of the cladding zone, bonding zone, and heat-affected zone. The Al2CrFeNiMo x coatings are composed of two simple body-center cubic phases and the cladding zone is mainly composed of equiaxed grains. When the content of Mo reaches 2 at.%, a eutectic structure is found in the interdendritic regions. The surface microhardness of the Al2CrFeNiMo2 coating is 678 HV, which is about three times higher than that of the substrate (243 HV). Compared with stainless steel, the wear resistance of the coatings has been improved greatly. The wear mass loss of the Al2CrFeNiMo alloy is 9.8 mg, which is much less than that of the substrate (18.9 mg) and its wear scar width is the lowest among the Al2CrFeNiMo x coatings, indicating that the wear resistance of the Al2CrFeNiMo is the best.

Survey of Thermal-Fluids Evaluation and Confirmatory Experimental Validation Requirements of Accident Tolerant Cladding Concepts with Focus on Boiling Heat Transfer Characteristics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brown, Nicholas R.; Wysocki, Aaron J.; Terrani, Kurt A.

The U.S. Department of Energy Office of Nuclear Energy (DOE-NE) Advanced Fuels Campaign (AFC) is working closely with the nuclear industry to develop fuel and cladding candidates with potentially enhanced accident tolerance, also known as accident tolerant fuel (ATF). Thermal-fluids characteristics are a vital element of a holistic engineering evaluation of ATF concepts. One vital characteristic related to boiling heat transfer is the critical heat flux (CHF). CHF plays a vital role in determining safety margins during normal operation and also in the progression of potential transient or accident scenarios. This deliverable is a scoping survey of thermal-fluids evaluation andmore » confirmatory experimental validation requirements of accident tolerant cladding concepts with a focus on boiling heat transfer characteristics. The key takeaway messages of this report are: 1. CHF prediction accuracy is important and the correlations may have significant uncertainty. 2. Surface conditions are important factors for CHF, primarily the wettability that is characterized by contact angle. Smaller contact angle indicates greater wettability, which increases the CHF. Surface roughness also impacts wettability. Results in the literature for pool boiling experiments indicate changes in CHF by up to 60% for several ATF cladding candidates. 3. The measured wettability of FeCrAl (i.e., contact angle and roughness) indicates that CHF should be investigated further through pool boiling and flow boiling experiments. 4. Initial measurements of static advancing contact angle and surface roughness indicate that FeCrAl is expected to have a higher CHF than Zircaloy. The measured contact angle of different FeCrAl alloy samples depends on oxide layer thickness and composition. The static advancing contact angle tends to decrease as the oxide layer thickness increases.« less

Hybrid UV Imager Containing Face-Up AlGaN/GaN Photodiodes

NASA Technical Reports Server (NTRS)

Zheng, Xinyu; Pain, Bedabrata

2005-01-01

A proposed hybrid ultraviolet (UV) image sensor would comprise a planar membrane array of face-up AlGaN/GaN photodiodes integrated with a complementary metal oxide/semiconductor (CMOS) readout-circuit chip. Each pixel in the hybrid image sensor would contain a UV photodiode on the AlGaN/GaN membrane, metal oxide/semiconductor field-effect transistor (MOSFET) readout circuitry on the CMOS chip underneath the photodiode, and a metal via connection between the photodiode and the readout circuitry (see figure). The proposed sensor design would offer all the advantages of comparable prior CMOS active-pixel sensors and AlGaN UV detectors while overcoming some of the limitations of prior (AlGaN/sapphire)/CMOS hybrid image sensors that have been designed and fabricated according to the methodology of flip-chip integration. AlGaN is a nearly ideal UV-detector material because its bandgap is wide and adjustable and it offers the potential to attain extremely low dark current. Integration of AlGaN with CMOS is necessary because at present there are no practical means of realizing readout circuitry in the AlGaN/GaN material system, whereas the means of realizing readout circuitry in CMOS are well established. In one variant of the flip-chip approach to integration, an AlGaN chip on a sapphire substrate is inverted (flipped) and then bump-bonded to a CMOS readout circuit chip; this variant results in poor quantum efficiency. In another variant of the flip-chip approach, an AlGaN chip on a crystalline AlN substrate would be bonded to a CMOS readout circuit chip; this variant is expected to result in narrow spectral response, which would be undesirable in many applications. Two other major disadvantages of flip-chip integration are large pixel size (a consequence of the need to devote sufficient area to each bump bond) and severe restriction on the photodetector structure. The membrane array of AlGaN/GaN photodiodes and the CMOS readout circuit for the proposed image sensor would be fabricated separately.

Fundamental metallurgical aspects of axial splitting in zircaloy cladding

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chung, H. M.

Fundamental metallurgical aspects of axial splitting in irradiated Zircaloy cladding have been investigated by microstructural characterization and analytical modeling, with emphasis on application of the results to understand high-burnup fuel failure under RIA situations. Optical microscopy, SEM, and TEM were conducted on BWR and PWR fuel cladding tubes that were irradiated to fluence levels of 3.3 x 10{sup 21} n cm{sup {minus}2} to 5.9 x 10{sup 21} n cm{sup {minus}2} (E > 1 MeV) and tested in hot cell at 292--325 C in Ar. The morphology, distribution, and habit planes of macroscopic and microscopic hydrides in as-irradiated and posttest claddingmore » were determined by stereo-TEM. The type and magnitude of the residual stress produced in association with oxide-layer growth and dense hydride precipitation, and several synergistic factors that strongly influence axial-splitting behavior were analyzed. The results of the microstructural characterization and stress analyses were then correlated with axial-splitting behavior of high-burnup PWR cladding reported for simulated-RIA conditions. The effects of key test procedures and their implications for the interpretation of RIA test results are discussed.« less

Further observations on OCOM MOX fuel: microstructure in the vicinity of the pellet rim and fuel — cladding interaction

NASA Astrophysics Data System (ADS)

Walker, C. T.; Goll, W.; Matsumura, T.

1997-06-01

The fuel investigated was manufactured by Siemens-KWU and irradiated at low rating in the KWO reactor in Germany. The MOX agglomerates in the cold outer region of the fuel shared several common features with the high burn-up structure at the rim of UO 2 fuel. It is proposed that in both cases the mechanism producing the microstructure change is recrystallisation. Further, it is shown that surface MOX agglomerates do not noticeably retard cladding creepdown although they swell into the gap. The contracting cladding appears able to push the agglomerates back into the fuel. The thickness of the oxide layer on the inner cladding surface increased at points where contact with surface MOX agglomerates had occurred. Despite this, the mean thickness of the oxide did not differ significantly from that found in UO 2 fuel rods of like design. It is judged that the high burn-up structure will form in the UO 2 matrix when the local burn-up there reaches 60 to 80 GWd/tM. Limiting the MOX scrap addition in the UO 2 matrix will delay its formation.

Wear and corrosion resistance of laser-cladded Fe-based composite coatings on AISI 4130 steel

NASA Astrophysics Data System (ADS)

Fan, Li; Chen, Hai-yan; Dong, Yao-hua; Dong, Li-hua; Yin, Yan-sheng

2018-06-01

The wear and corrosion resistance of Fe72.2Cr16.8Ni7.3Mo1.6Mn0.7C0.2Si1.2 and Fe77.3Cr15.8Ni3.9Mo1.1Mn0.5C0.2Si1.2 coatings laser-cladded on AISI 4130 steel were studied. The coatings possess excellent wear and corrosion resistance despite the absence of expensive yttrium, tungsten, and cobalt and very little molybdenum. The microstructure mainly consists of dendrites and eutectic phases, such as duplex (γ+α)-Fe and the Fe-Cr (Ni) solid solution, confirmed via energy dispersive spectrometry and X-ray diffraction. The cladded Fe-based coatings have lower coefficients of friction, and narrower and shallower wear tracks than the substrate without the cladding, and the main wear mechanism is mild abrasive wear. Electrochemical test results suggest that the soft Fe72.2Cr16.8Ni7.3Mo1.6Mn0.7C0.2Si1.2 coating with high Cr and Ni concentrations has high passivation resistance, low corrosion current, and positive corrosion potential, providing a better protective barrier layer to the AISI 4130 steel against corrosion.

Selective area deposited n-Al0.5Ga0.5N channel field effect transistors with high solar-blind ultraviolet photo-responsivity

NASA Astrophysics Data System (ADS)

Muhtadi, S.; Hwang, S.; Coleman, A.; Asif, F.; Lunev, A.; Chandrashekhar, M. V. S.; Khan, A.

2017-04-01

We report on AlGaN field effect transistors over AlN/sapphire templates with selective area grown n-Al0.5Ga0.5N channel layers for which a field-effect mobility of 55 cm2/V-sec was measured. Using a pulsed plasma enhanced chemical vapor deposition deposited 100 A thick SiO2 layer as the gate-insulator, the gate-leakage currents were reduced by three orders of magnitude. These devices with or without gate insulators are excellent solar-blind ultraviolet detectors, and they can be operated either in the photoconductive or the photo-voltaic modes. In the photo-conductive mode, gain arising from hole-trapping in the depletion region leads to steady-state photoresponsivity as high as 1.2 × 106A/W at 254 nm, which drops sharply below 290 nm. A hole-trapping limited detector response time of 34 ms, fast enough for real-time flame-detection and imaging applications, was estimated.

Improved mobility in InAlN/AlGaN two-dimensional electron gas heterostructures with an atomically smooth heterointerface

NASA Astrophysics Data System (ADS)

Hosomi, Daiki; Miyachi, Yuta; Egawa, Takashi; Miyoshi, Makoto

2018-04-01

We attempted to improve the mobility of InAlN/AlGaN two-dimensional electron gas (2DEG) heterostructures by achieving an atomically smooth heterointerface in metalorganic chemical vapor deposition processes. In the result, it was confirmed that the high-growth-rate AlGaN layer was very effective to improve the surface morphology. The atomically smooth surface morphology with a root-mean-square roughness of 0.26 nm was achieved for an Al0.15Ga0.85N layer under the growth rate of approximately 6 µm/h. Furthermore, nearly lattice-matched In0.17Al0.83N/Al0.15Ga0.85N 2DEG heterostructures with the atomically smooth heterointerface exhibited a 2DEG mobility of 242 cm2 V-1 s-1 with a 2DEG density of 2.6 × 1013/cm2, which was approximately 1.5 times larger than the mobility in a sample grown under original conditions.

effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsatsulnikov, A. F., E-mail: andrew@beam.ioffe.ru; Lundin, V. W.; Zavarin, E. E.

The effect of the layer thickness and composition in AlGaN/AlN/GaN and InAlN/AlN/GaN transistor heterostructures with a two-dimensional electron gas on their electrical and the static parameters of test transistors fabricated from such heterostructures are experimentally and theoretically studied. It is shown that the use of an InAlN barrier layer instead of AlGaN results in a more than twofold increase in the carrier concentration in the channel, which leads to a corresponding increase in the saturation current. In situ dielectric-coating deposition on the InAlN/AlN/GaN heterostructure surface during growth process allows an increase in the maximum saturation current and breakdown voltages whilemore » retaining high transconductance.« less

Design considerations for λ ˜ 3.0- to 3.5-μm-emitting quantum cascade lasers on metamorphic buffer layers

NASA Astrophysics Data System (ADS)

Rajeev, Ayushi; Sigler, Chris; Earles, Tom; Flores, Yuri V.; Mawst, Luke J.; Botez, Dan

2018-01-01

Quantum cascade lasers (QCLs) that employ metamorphic buffer layers as substrates of variable lattice constant have been designed for emission in the 3.0- to 3.5-μm wavelength range. Theoretical analysis of the active-region (AR) energy band structure, while using an 8-band k•p model, reveals that one can achieve both effective carrier-leakage suppression as well as fast carrier extraction in QCL structures of relatively low strain. Significantly lower indium-content quantum wells (QWs) can be employed for the AR compared to QWs employed for conventional short-wavelength QCL structures grown on InP, which, in turn, is expected to eliminate carrier leakage to indirect-gap valleys (X, L). An analysis of thermo-optical characteristics for the complete device design indicates that high-Al-content AlInAs cladding layers are more effective for both optical confinement and thermal dissipation than InGaP cladding layers. An electroluminescence-spectrum full-width half-maximum linewidth of 54.6 meV is estimated from interface roughness scattering and, by considering both inelastic and elastic scattering, the threshold-current density for 3.39-μm-emitting, 3-mm-long back-facet-coated QCLs is projected to be 1.40 kA/cm2.

Opening a band gap without breaking lattice symmetry: a new route toward robust graphene-based nanoelectronics.

PubMed

Kou, Liangzhi; Hu, Feiming; Yan, Binghai; Frauenheim, Thomas; Chen, Changfeng

2014-07-07

Developing graphene-based nanoelectronics hinges on opening a band gap in the electronic structure of graphene, which is commonly achieved by breaking the inversion symmetry of the graphene lattice via an electric field (gate bias) or asymmetric doping of graphene layers. Here we introduce a new design strategy that places a bilayer graphene sheet sandwiched between two cladding layers of materials that possess strong spin-orbit coupling (e.g., Bi2Te3). Our ab initio and tight-binding calculations show that a proximity enhanced spin-orbit coupling effect opens a large (44 meV) band gap in bilayer graphene without breaking its lattice symmetry, and the band gap can be effectively tuned by an interlayer stacking pattern and significantly enhanced by interlayer compression. The feasibility of this quantum-well structure is demonstrated by recent experimental realization of high-quality heterojunctions between graphene and Bi2Te3, and this design also conforms to existing fabrication techniques in the semiconductor industry. The proposed quantum-well structure is expected to be especially robust since it does not require an external power supply to open and maintain a band gap, and the cladding layers provide protection against environmental degradation of the graphene layer in its device applications.

Experimental and numerical investigation on cladding of corrosion-erosion resistant materials by a high power direct diode laser

NASA Astrophysics Data System (ADS)

Farahmand, Parisa

In oil and gas industry, soil particles, crude oil, natural gas, particle-laden liquids, and seawater can carry various highly aggressive elements, which accelerate the material degradation of component surfaces by combination of slurry erosion, corrosion, and wear mechanisms. This material degradation results into the loss of mechanical properties such as strength, ductility, and impact strength; leading to detachment, delamination, cracking, and ultimately premature failure of components. Since the failure of high valued equipment needs considerable cost and time to be repaired or replaced, minimizing the tribological failure of equipment under aggressive environment has been gaining increased interest. It is widely recognized that effective management of degradation mechanisms will contribute towards the optimization of maintenance, monitoring, and inspection costs. The hardfacing techniques have been widely used to enhance the resistance of surfaces against degradation mechanisms. Applying a surface coating improves wear and corrosion resistance and ensures reliability and long-term performance of coated parts. A protective layer or barrier on the components avoids the direct mechanical and chemical contacts of tool surfaces with process media and will reduce the material loss and ultimately its failure. Laser cladding as an advanced hardfacing technique has been widely used for industrial applications in order to develop a protective coating with desired material properties. During the laser cladding, coating material is fused into the base material by means of a laser beam in order to rebuild a damaged part's surface or to enhance its surface function. In the hardfacing techniques such as atmospheric plasma spraying (APS), high velocity oxygen-fuel (HVOF), and laser cladding, mixing of coating materials with underneath surface has to be minimized in order to utilize the properties of the coating material most effectively. In this regard, laser cladding offers advantages due to creating coating layers with superior properties in terms of purity, homogeneity, low dilution, hardness, bonding, and microstructure. In the development of modern materials for hardfacing applications, the functionality is often improved by combining materials with different properties into composites. Metal Matrix Composite (MMC) coating is a composite material with two constituent parts, i.e., matrix and the reinforcement. This class of composites are addressing improved mechanical properties such as stiffness, strength, toughness, and tribological and chemical resistance. Fabrication of MMCs is to achieve a combination of properties not achievable by any of the materials acting alone. MMCs have attracted significant attention for decades due to their combination of wear-resistivity, corrosion-resistivity, thermal, electrical and magnetic properties. Presently, there is a strong emphasis on the development of advanced functional coatings for corrosion, erosion, and wear protection for different industrial applications. In this research, a laser cladding system equipped with a high power direct diode laser associated with gas driven metal powder delivery system was used to develop advanced MMC coatings. The high power direct diode laser used in this study offers wider beam spot, shorter wavelength and uniform power distribution. These properties make the cladding set-up ideal for coating due to fewer cladding tracks, lower operation cost, higher laser absorption, and improved coating qualities. In order to prevent crack propagation, porosity, and uniform dispersion of carbides in MMC coating, cladding procedure was assisted by an induction heater as a second heat source. The developed defect free MMC coatings were combined with nano-size particles of WC, rare earth (RE) element (La2O3), and Mo as a refractory metal to enhance mechanical properties, chemical composition, and subsequently improve the tribological performance of the coatings. The resistance of developed MMC coatings were examined under highly accelerated slurry erosion, corrosion, and wear as the most frequently encountered failure modes of mechanical components. The microstructure, mechanical properties, and the level of induced residual stress on the coating after cladding procedure are closely related to cladding process variables. Study about the effect of processing parameters on clad quality and experienced thermal history and thermally-induced stress evolution requires both theoretical and experimental understanding of the associated physical phenomena. Numerical modeling offers a cost-efficient way to better understand the related complex physics in laser cladding process. It helps to reveal the effects and significance of each processing parameters on the desired characteristics of clad parts. Successful numerical simulation can provide unique insight into complex laser cladding process, efficiently calculate the complex procedure, and help to obtain coating parts with quality integrity. Therefore, current study develops a three-dimensional (3D) transient and uncoupled thermo-elastic-plastic model to study thermal history, molten pool evolution, thermally induced residual stress, and the effect of utilizing an induction heater as a second heat source on the mechanical properties and microstructural properties of final cladded coating.

Localized surface plasmon enhanced deep UV-emitting of AlGaN based multi-quantum wells by Al nanoparticles on SiO2 dielectric interlayer

NASA Astrophysics Data System (ADS)

He, Ju; Wang, Shuai; Chen, Jingwen; Wu, Feng; Dai, Jiangnan; Long, Hanling; Zhang, Yi; Zhang, Wei; Feng, Zhe Chuan; Zhang, Jun; Du, Shida; Ye, Lei; Chen, Changqing

2018-05-01

In this paper, we report a 2.6-fold deep ultraviolet emission enhancement of integrated photoluminescence (PL) intensity in AlGaN-based multi-quantum wells (MQWs) by introducing the coupling of local surface plasmons from Al nanoparticles (NPs) on a SiO2 dielectric interlayer with excitons and photons in MQWs at room temperature. In comparison to bare AlGaN MQWs, a significant 2.3-fold enhancement of the internal quantum efficiency, from 16% to 37%, as well as a 13% enhancement of photon extraction efficiency have been observed in the MQWs decorated with Al NPs on SiO2 dielectric interlayer. Polarization-dependent PL measurement showed that both the transverse electric and transverse magnetic mode were stronger than the original intensity in bare AlGaN MQWs, indicating a strong LSPs coupling process and vigorous scattering ability of the Al/SiO2 composite structure. These results were confirmed by the activation energy of non-radiative recombination from temperature-dependent PL measurement and the theoretical three dimensional finite difference time domain calculations.

Localized surface plasmon enhanced deep UV-emitting of AlGaN based multi-quantum wells by Al nanoparticles on SiO2 dielectric interlayer.

PubMed

He, Ju; Wang, Shuai; Chen, Jingwen; Wu, Feng; Dai, Jiangnan; Long, Hanling; Zhang, Yi; Zhang, Wei; Feng, Zhe Chuan; Zhang, Jun; Du, Shida; Ye, Lei; Chen, Changqing

2018-05-11

In this paper, we report a 2.6-fold deep ultraviolet emission enhancement of integrated photoluminescence (PL) intensity in AlGaN-based multi-quantum wells (MQWs) by introducing the coupling of local surface plasmons from Al nanoparticles (NPs) on a SiO 2 dielectric interlayer with excitons and photons in MQWs at room temperature. In comparison to bare AlGaN MQWs, a significant 2.3-fold enhancement of the internal quantum efficiency, from 16% to 37%, as well as a 13% enhancement of photon extraction efficiency have been observed in the MQWs decorated with Al NPs on SiO 2 dielectric interlayer. Polarization-dependent PL measurement showed that both the transverse electric and transverse magnetic mode were stronger than the original intensity in bare AlGaN MQWs, indicating a strong LSPs coupling process and vigorous scattering ability of the Al/SiO 2 composite structure. These results were confirmed by the activation energy of non-radiative recombination from temperature-dependent PL measurement and the theoretical three dimensional finite difference time domain calculations.

Model of depositing layer on cylindrical surface produced by induction-assisted laser cladding process

NASA Astrophysics Data System (ADS)

Kotlan, Václav; Hamar, Roman; Pánek, David; Doležel, Ivo

2017-12-01

A model of hybrid cladding on a cylindrical surface is built and numerically solved. Heating of both substrate and the powder material to be deposited on its surface is realized by laser beam and preheating inductor. The task represents a hard-coupled electromagnetic-thermal problem with time-varying geometry. Two specific algorithms are developed to incorporate this effect into the model, driven by local distribution of temperature and its gradients. The algorithms are implemented into the COMSOL Multiphysics 5.2 code that is used for numerical computations of the task. The methodology is illustrated with a typical example whose results are discussed.

Measure Guideline. Transitioning From Three-Coat Stucco to One-Coat Stucco With EPS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brozyna, K.; Davis, G.; Rapport, A.

2012-04-01

This measure guideline has been developed to help builders transition from using a traditional three-coat stucco wall-cladding system to a one-coat stucco wall-cladding system with expanded polystyrene (EPS) insulated sheathing. The one-coat system maintains the look of a traditional stucco system but uses only a base layer and a finish coat over EPS insulation that achieves higher levels of energy efficiency. Potential risks associated with the installation of a one-coat stucco system are addressed in terms of design, installation, and warranty concerns such as cracking and delamination, along with mitigation strategies to reduce these risks.

Use of ion beams to simulate reaction of reactor fuels with their cladding

NASA Astrophysics Data System (ADS)

Birtcher, R. C.; Baldo, P.

2006-01-01

Processes occurring within reactor cores are not amenable to direct experimental observation. Among major concerns are damage, fission gas accumulation and reaction between the fuel and its cladding all of which lead to swelling. These questions can be investigated through simulation with ion beams. As an example, we discuss the irradiation driven interaction of uranium-molybdenum alloys, intended for use as low-enrichment reactor fuels, with aluminum, which is used as fuel cladding. Uranium-molybdenum coated with a 100 nm thin film of aluminum was irradiated with 3 MeV Kr ions to simulate fission fragment damage. Mixing and diffusion of aluminum was followed as a function of irradiation with RBS and nuclear reaction analysis using the 27Al(p,γ)28Si reaction which occurs at a proton energy of 991.9 keV. During irradiation at 150 °C, aluminum diffused into the uranium alloy at a irradiation driven diffusion rate of 30 nm2/dpa. At a dose of 90 dpa, uranium diffusion into the aluminum layer resulted in formation of an aluminide phase at the initial interface. The thickness of this phase grew until it consumed the aluminum layer. The rapid diffusion of Al into these reactor fuels may offer explanation of the observation that porosity is not observed in the fuel particles but on their periphery.

Processing of pure Ti by rapid prototyping based on laser cladding

NASA Astrophysics Data System (ADS)

Arias-González, F.; del Val, J.; Comesaña, R.; Lusquiños, F.; Quintero, F.; Riveiro, A.; Boutinguiza, M.; Pou, J.

2013-11-01

Rapid prototyping based on laser cladding is an additive manufacturing (AM) process based on the overlapping of cladding tracks to produce functional components. Powder or wire are fed into a melting pool created using laser radiation as a heat source and the relative movement between the beam and the work piece makes possible to generate pieces layer-by-layer. This technique can be applied for any material which can be melted and the components can be manufactured directly according to a computer aided design (CAD) model. Additive manufacturing is particularly interesting to produce titanium components because, in this case, the loss of material produced by subtractive manufacturing methods is highly costly. Moreover, titanium and its alloys are widely used in biomedical, aircraft, chemical and marine industries due to their biocompatibility, excellent corrosion resistance and superior strength-to-weight ratio. In this research work, a near-infrared laser delivering a maximum power of 500W is used to produce pure titanium thin parts. Dimensions and surface morphology are characterized using Optical Microscopy (OM) and Scanning Electron Microscopy (SEM), the hardness by nanoindentation and the composition by X-Ray Diffraction (XRD) and Energy Dispersive X-Ray Spectroscopy (EDS). The aim of this work is to establish the conditions under which satisfactory properties are obtained and to understand the relationship between microstructure/properties and deposition parameters.

Tailoring light-sound interactions in a single mode fiber for the high-power transmission or sensing applications

NASA Astrophysics Data System (ADS)

Gulistan, Aamir; Rahman, M. M.; Ghosh, Souvik; Rahman, B. M. A.

2018-03-01

A full-vectorial numerically efficient Finite Element Method (FEM) based computer code is developed to study complex light-sound interactions in a single mode fiber (SMF). The SBS gain or SBS threshold in a fiber is highly related to the overlap between the optical and acoustic modes. For a typical SMF the acoustic-optic overlap strongly depends on the optical and acoustic mode profiles and it is observed that the acoustic mode is more confined in the core than the optical mode and reported overlap is around 94 % between these fundamental optical and acoustic modes. However, it is shown here that selective co-doping of Aluminum and Germanium in core reduces the acoustic index while keeping the optical index of the same value and thus results in increased acoustic- optic overlap of 99.7%. On the other hand, a design of acoustic anti-guide fiber for high-power transmission systems is also proposed, where the overlap between acoustic and optical modes is reduced. Here, we show that by keeping the optical properties same as a standard SMF and introducing a Boron doped 2nd layer in the cladding, a very low value of 2.7% overlap is achieved. Boron doping in cladding 2nd layer results in a high acoustic index and acoustic modes shifts in the cladding from the core, allowing much high power delivery through this SMF.

High-temperature oxidation kinetics of sponge-based E110 cladding alloy

DOE PAGES

Yan, Yong; Garrison, Benton E.; Howell, Mike; ...

2017-11-03

Two-sided oxidation experiments were recently conducted at 900°C–1200 °C in flowing steam with samples of sponge-based Zr-1Nb alloy E110. Although the old electrolytic E110 tubing exhibited a high degree of susceptibility to nodular corrosion and experienced breakaway oxidation rates in a relatively short time, the new sponge-based E110 demonstrated steam oxidation behavior comparable to Zircaloy-4. Sample weight gain and oxide layer thickness measurements were performed on oxidized E110 specimens and compared to oxygen pickup and oxide layer thickness calculations using the Cathcart-Pawel correlation. Our study shows that the sponge-based E110 follows the parabolic law at temperatures above 1015 °C. Atmore » or below 1015 °C, the oxidation rate was very low when compared to Zircaloy-4 and can be represented by a cubic expression. No breakaway oxidation was observed at 1000 °C for oxidation times up to 10,000 s. Arrhenius expressions are given to describe the parabolic rate constants at temperatures above 1015 °C and cubic rate constants are provided for temperatures below 1015 °C. The weight gains calculated by our equations are in excellent agreement with the measured sample weight gains at all test temperatures. In addition to the as-fabricated E110 cladding sample, prehydrided E110 cladding with hydrogen concentrations in the 100–150 wppm range was also investigated. The effect of hydrogen content on sponge-based E110 oxidation kinetics was minimal. No significant difference was found between as-fabricated and hydrided samples with regard to oxygen pickup and oxide layer thickness for hydrogen contents below 150 wppm.« less

High-temperature oxidation kinetics of sponge-based E110 cladding alloy

NASA Astrophysics Data System (ADS)

Yan, Yong; Garrison, Benton E.; Howell, Mike; Bell, Gary L.

2018-02-01

Two-sided oxidation experiments were recently conducted at 900°C-1200 °C in flowing steam with samples of sponge-based Zr-1Nb alloy E110. Although the old electrolytic E110 tubing exhibited a high degree of susceptibility to nodular corrosion and experienced breakaway oxidation rates in a relatively short time, the new sponge-based E110 demonstrated steam oxidation behavior comparable to Zircaloy-4. Sample weight gain and oxide layer thickness measurements were performed on oxidized E110 specimens and compared to oxygen pickup and oxide layer thickness calculations using the Cathcart-Pawel correlation. Our study shows that the sponge-based E110 follows the parabolic law at temperatures above 1015 °C. At or below 1015 °C, the oxidation rate was very low when compared to Zircaloy-4 and can be represented by a cubic expression. No breakaway oxidation was observed at 1000 °C for oxidation times up to 10,000 s. Arrhenius expressions are given to describe the parabolic rate constants at temperatures above 1015 °C and cubic rate constants are provided for temperatures below 1015 °C. The weight gains calculated by our equations are in excellent agreement with the measured sample weight gains at all test temperatures. In addition to the as-fabricated E110 cladding sample, prehydrided E110 cladding with hydrogen concentrations in the 100-150 wppm range was also investigated. The effect of hydrogen content on sponge-based E110 oxidation kinetics was minimal. No significant difference was found between as-fabricated and hydrided samples with regard to oxygen pickup and oxide layer thickness for hydrogen contents below 150 wppm.

Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency

NASA Astrophysics Data System (ADS)

Zhang, Yuewei; Jamal-Eddine, Zane; Akyol, Fatih; Bajaj, Sanyam; Johnson, Jared M.; Calderon, Gabriel; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Hwang, Jinwoo; Rajan, Siddharth

2018-02-01

We report on the high efficiency tunnel-injected ultraviolet light emitting diodes (UV LEDs) emitting at 287 nm. Deep UV LED performance has been limited by the severe internal light absorption in the p-type contact layers and low electrical injection efficiency due to poor p-type conduction. In this work, a polarization engineered Al0.65Ga0.35N/In0.2Ga0.8N tunnel junction layer is adopted for non-equilibrium hole injection to replace the conventionally used direct p-type contact. A reverse-graded AlGaN contact layer is further introduced to realize a low resistance contact to the top n-AlGaN layer. This led to the demonstration of a low tunnel junction resistance of 1.9 × 10-3 Ω cm2 obtained at 1 kA/cm2. Light emission at 287 nm with an on-wafer peak external quantum efficiency of 2.8% and a wall-plug efficiency of 1.1% was achieved. The measured power density at 1 kA/cm2 was 54.4 W/cm2, confirming the efficient hole injection through interband tunneling. With the benefits of the minimized internal absorption and efficient hole injection, a tunnel-injected UV LED structure could enable future high efficiency UV emitters.

Developing a laser shockwave model for characterizing diffusion bonded interfaces

NASA Astrophysics Data System (ADS)

Lacy, Jeffrey M.; Smith, James A.; Rabin, Barry H.

2015-03-01

The US National Nuclear Security Agency has a Global Threat Reduction Initiative (GTRI) with the goal of reducing the worldwide use of high-enriched uranium (HEU). A salient component of that initiative is the conversion of research reactors from HEU to low enriched uranium (LEU) fuels. An innovative fuel is being developed to replace HEU in high-power research reactors. The new LEU fuel is a monolithic fuel made from a U-Mo alloy foil encapsulated in Al-6061 cladding. In order to support the fuel qualification process, the Laser Shockwave Technique (LST) is being developed to characterize the clad-clad and fuel-clad interface strengths in fresh and irradiated fuel plates. LST is a non-contact method that uses lasers for the generation and detection of large amplitude acoustic waves to characterize interfaces in nuclear fuel plates. However, because the deposition of laser energy into the containment layer on a specimen's surface is intractably complex, the shock wave energy is inferred from the surface velocity measured on the backside of the fuel plate and the depth of the impression left on the surface by the high pressure plasma pulse created by the shock laser. To help quantify the stresses generated at the interfaces, a finite element method (FEM) model is being utilized. This paper will report on initial efforts to develop and validate the model by comparing numerical and experimental results for back surface velocities and front surface depressions in a single aluminum plate representative of the fuel cladding.

In situ formation of titanium carbide using titanium and carbon-nanotube powders by laser cladding

NASA Astrophysics Data System (ADS)

Savalani, M. M.; Ng, C. C.; Li, Q. H.; Man, H. C.

2012-01-01

Titanium metal matrix composite coatings are considered to be important candidates for high wear resistance applications. In this study, TiC reinforced Ti matrix composite layers were fabricated by laser cladding with 5, 10, 15 and 20 wt% carbon-nanotube. The effects of the carbon-nanotube content on phase composition, microstructure, micro-hardness and dry sliding wear resistance of the coating were studied. Microstructural observation using scanning electron microscopy showed that the coatings consisted of a matrix of alpha-titanium phases and the reinforcement phase of titanium carbide in the form of fine dendrites, indicating that titanium carbide was synthesized by the in situ reaction during laser irradiation. Additionally, measurements on the micro-hardness and dry sliding wear resistance of the coatings indicated that the mechanical properties were affected by the amount of carbon-nanotube in the starting precursor materials and were enhanced by increasing the carbon-nanotube content. Results indicated that the composite layers exhibit high hardness and excellent wear resistance.

Ti Alloys Processed By Selective Laser Melting And By Laser Cladding: Microstructures And Mechanical Properties

NASA Astrophysics Data System (ADS)

Mertens, Anne; Contrepois, Quentin; Dormal, Thierry; Lemaire, Olivier; Lecomte-Beckers, Jacqueline

2012-07-01

In this study, samples of alloy Ti-6Al-4V have been processed by Selective Laser Melting (SLM) and by Laser Cladding (LC), two layer-by-layer near-net-shape processes allowing for economic production of complex parts. The resulting microstructures have been characterised in details, so as to allow for a better understanding of the solidification process and of the subsequent phase transformations taking place upon cooling for both techniques. On the one hand, a new “MesoClad” laser with a maximum power of 300 W has been used successfully to produce thin wall samples by LC. On the other hand, the influence of processing parameters on the mechanical properties was investigated by means of uniaxial tensile testing performed on samples produced by SLM with different orientations with respect to the direction of mechanical solicitation. A strong anisotropy in mechanical behaviour was thus interpreted in relations with the microstructures and processing conditions.

On processing of Ni-Cr3C2 based functionally graded clads through microwave heating

NASA Astrophysics Data System (ADS)

Kaushal, Sarbjeet; Gupta, Dheeraj; Bhowmick, Hiralal

2018-06-01

In the current study, functionally graded clads (FGC) of Ni-Cr3C2 based composite powders with varying percentage of Cr3C2 (0%–30% by weight) were developed on austenitic stainless steel (SS-304) substrate through microwave hybrid heating method. A domestic microwave oven working at 2.45 GHz and variable power level of 180–900 W was used to conduct the experimental trials. The exposure time was varied with compositional gradient and was optimized. Scanning electron microscopic (SEM) image of the FGC shows the uniform distribution of Cr3C2 particles inside the Ni matrix. Presence of Ni3C, Ni3Si, Ni3Cr2, and Cr3C2 phases was observed in the different layers of FGC. The top FGC layer exhibits the maximum value of microhardness of order 576 ± 25 HV which was 2.5 times more than that of the substrate.

RERTR-9 Summary Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

D. M. Perez

2011-05-01

The RERTR-9 experiment was designed to test the effect of modified fuel/clad interfaces in monolithic fuel plates and to demonstrate that the addition of Si to the matrix material in dispersion plates continued to be effective at high loading (~8.5 g U/cc). Several monolithic fuel plates were fabricated by Hot Isostatic Pressing (HIP) and Friction Bonding (FB) with thin layers of Si inserted and by HIP with a Zr diffusion barrier between the fuel and cladding. Si was applied to the interface by thermal spray of Al Si mixtures and by the insertion of thin Si-rich Al alloy foil betweenmore » the fuel/clad interface. The dispersion fuel plates were fabricated by semi-standard rolling techniques (the reduction by rolling was lowered to limit fabrication defects). Matrix materials consisted of Al-Si alloys and mixtures with various levels of Si. The following report summarizes the life of the RERTR-9A/B experiment through end of irradiation, including as-run neutronic analysis, thermal analysis and hydraulic testing results.« less

Technology Solutions Case Study: Initial and Long-Term MOvement of Cladding Installed Over Exterior Rigid Insulation

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

Changes in the International Energy Conservation Code (IECC) from 2009 to 2012 have resulted in the use of exterior rigid insulation becoming part of the prescriptive code requirements. With more jurisdictions adopting the 2012 IECC, builders will be required to incorporate exterior insulation in the construction of their exterior wall assemblies. For thick layers of exterior insulation (levels greater than 1.5 inches), the use of wood of furring strips attached through the insulation back to the structure has been used by many contractors and designers as a means to provide a convenient cladding attachment location. However, there has been resistancemore » to its widespread implementation due to a lack of research and understanding of the mechanisms involved and potential creep effects of the assembly under the sustained dead load of a cladding. This research conducted by Building Science Corporation evaluated the system mechanics and long-term performance of this technique.« less

Selective laser processing of ink-jet printed nano-scaled tin-clad copper particles

NASA Astrophysics Data System (ADS)

Yung, K. C.; Plura, T. S.

2010-11-01

The deposition of tin-clad nano-size copper particles was carried out by means of ink-jet printing. Curing the particles on Polyimide (PI) turned them into soldered structures using an Nd-YAG laser. Area coverage of 55% was achieved for a single-layer print. Subsequent laser sintering increased this value to 95%. A Butanol-based copper ink and an aqueous tin (Sn)-clad Copper (Cu) ink were produced and were ink-jetted in this work. These nano-metallic inks showed excellent suspension stability with particle weight concentrations as high as 5%. The ink components were examined by measuring the particle size distribution in a dispersed condition, and the melting temperature. A piezo ink-jet print head was used to deposit the inks onto a moveable substrate. The thermal effect of the laser irradiation allowed approaching and connecting adjacent particles by melting the particle’s tin coating. The results were examined with regard to structure and soldering properties using EDX, SEM and optical microscopy.

Buffer transport mechanisms in intentionally carbon doped GaN heterojunction field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Uren, Michael J.; Cäsar, Markus; Kuball, Martin

2014-06-30

Temperature dependent pulsed and ramped substrate bias measurements are used to develop a detailed understanding of the vertical carrier transport in the buffer layers in a carbon doped GaN power heterojunction field effect transistor. Carbon doped GaN and multiple layers of AlGaN alloy are used in these devices to deliver an insulating and strain relieved buffer with high breakdown voltage capability. However, understanding of the detailed physical mechanism for its operation is still lacking. At the lowest electric fields (<10 MV/m), charge redistribution within the C doped layer is shown to occur by hole conduction in the valence band withmore » activation energy 0.86 eV. At higher fields, leakage between the two-dimensional electron gas and the buffer dominates occurring by a Poole-Frenkel mechanism with activation energy ∼0.65 eV, presumably along threading dislocations. At higher fields still, the strain relief buffer starts to conduct by a field dependent process. Balancing the onset of these leakage mechanisms is essential to allow the build-up of positive rather than negative space charge, and thus minimize bulk-related current-collapse in these devices.« less

Designed porosity materials in nuclear reactor components

DOEpatents

Yacout, A. M.; Pellin, Michael J.; Stan, Marius

2016-09-06

A nuclear fuel pellet with a porous substrate, such as a carbon or tungsten aerogel, on which at least one layer of a fuel containing material is deposited via atomic layer deposition, and wherein the layer deposition is controlled to prevent agglomeration of defects. Further, a method of fabricating a nuclear fuel pellet, wherein the method features the steps of selecting a porous substrate, depositing at least one layer of a fuel containing material, and terminating the deposition when the desired porosity is achieved. Also provided is a nuclear reactor fuel cladding made of a porous substrate, such as silicon carbide aerogel or silicon carbide cloth, upon which layers of silicon carbide are deposited.

Demonstration of solar-blind AlxGa1-xN-based heterojunction phototransistors

NASA Astrophysics Data System (ADS)

Zhang, Lingxia; Tang, Shaoji; Liu, Changshan; Li, Bin; Wu, Hualong; Wang, Hailong; Wu, Zhisheng; Jiang, Hao

2015-12-01

Al0.4Ga0.6N/Al0.65Ga0.35N heterojunction phototransistors have been fabricated from the epi-structure grown by low-pressure metal organic chemical vapor deposition on c-plane sapphire substrates. P-type conductivity of the AlGaN base layer was realized by using indium surfactant-assisted Mg-delta doping method. Regrowth technique was used to suppress the Mg memory effect on the n-type emitter. The fabricated devices with a 150-μm-diameter active area exhibited a bandpass spectral response between 235 and 285 nm. Dark current was measured to be less than 10 pA for bias voltages below 2.0 V. A high optical gain of 1.9 × 103 was obtained at 6 V bias.

Lattice-matched double dip-shaped BAlGaN/AlN quantum well structures for ultraviolet light emission devices

NASA Astrophysics Data System (ADS)

Park, Seoung-Hwan; Ahn, Doyeol

2018-05-01

Ultraviolet light emission characteristics of lattice-matched BxAlyGa1-x-y N/AlN quantum well (QW) structures with double AlGaN delta layers were investigated theoretically. In contrast to conventional single dip-shaped QW structure where the reduction effect of the spatial separation between electron and hole wave functions is negligible, proposed double dip-shaped QW shows significant enhancement of the ultraviolet light emission intensity from a BAlGaN/AlN QW structure due to the reduced spatial separation between electron and hole wave functions. The emission peak of the double dip-shaped QW structure is expected to be about three times larger than that of the conventional rectangular AlGaN/AlN QW structure.

Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lekhal, K.; Damilano, B., E-mail: bd@crhea.cnrs.fr; De Mierry, P.

2015-04-06

Yellow/amber (570–600 nm) emitting In{sub x}Ga{sub 1−x}N/Al{sub y}Ga{sub 1−y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1−x}N QWs by the Al{sub y}Ga{sub 1−y}N layers, respectively.

Enhanced light extraction efficiency of micro-ring array AlGaN deep ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Bekele Fayisa, Gabisa; Lee, Jong Won; Kim, Jungsub; Kim, Yong-Il; Park, Youngsoo; Kim, Jong Kyu

2017-09-01

An effective approach to overcome inherently poor light extraction efficiency of AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) is presented. We demonstrated the 5 × 5 array micro-ring DUV LED having an inclined sidewall at the outer perimeter and a p-GaN-removed inner circle of the micro-ring, together with MgF2/Al omnidirectional reflectors. The micro-ring array DUV LED shows remarkably higher light output power by 70% than the reference, consistent with the calculated result, as well as comparable turn-on and operational voltages, which are attributed to the effective extraction of strong transverse-magnetic polarized anisotropic emission and the reduction of the absorption loss by the p-GaN contact layer, simultaneously.

Toward single-mode active crystal fibers for next-generation high-power fiber devices.

PubMed

Lai, Chien-Chih; Gao, Wan-Ting; Nguyen, Duc Huy; Ma, Yuan-Ron; Cheng, Nai-Chia; Wang, Shih-Chang; Tjiu, Jeng-Wei; Huang, Chun-Ming

2014-08-27

We report what we believe to be the first demonstration of a facile approach with controlled geometry for the production of crystal-core ceramic-clad hybrid fibers for scaling fiber devices to high average powers. The process consists of dip coating a solution of polycrystalline alumina onto a high-crystallinity 40-μm-diameter Ti:sapphire single-crystalline core followed by thermal treatments. Comparison of the measured refractive index with high-resolution transmission electron microscopy reveals that a Ca/Si-rich intragranular layer is precipitated at grain boundaries by impurity segregation and liquid-phase formation due to the relief of misfit strain energy in the Al2O3 matrix, slightly perturbing the refractive index and hence the optical properties. Additionally, electron backscatter diffractions supply further evidence that the Ti:sapphire single-crystalline core provides the template for growth into a sacrificial polycrystalline cladding, bringing the core and cladding into a direct bond. The thus-prepared doped crystal core with the undoped crystal cladding was achieved through the abnormal grain-growth process. The presented results provide a general guideline both for controlling crystal growth and for the performance of hybrid materials and provides insights into how one might design single-mode high-power crystal fiber devices.

Using wire shaping techniques and holographic optics to optimize deposition characteristics in wire-based laser cladding.

PubMed

Goffin, N J; Higginson, R L; Tyrer, J R

2016-12-01

In laser cladding, the potential benefits of wire feeding are considerable. Typical problems with the use of powder, such as gas entrapment, sub-100% material density and low deposition rate are all avoided with the use of wire. However, the use of a powder-based source material is the industry standard, with wire-based deposition generally regarded as an academic curiosity. This is because, although wire-based methods have been shown to be capable of superior quality results, the wire-based process is more difficult to control. In this work, the potential for wire shaping techniques, combined with existing holographic optical element knowledge, is investigated in order to further improve the processing characteristics. Experiments with pre-placed wire showed the ability of shaped wire to provide uniformity of wire melting compared with standard round wire, giving reduced power density requirements and superior control of clad track dilution. When feeding with flat wire, the resulting clad tracks showed a greater level of quality consistency and became less sensitive to alterations in processing conditions. In addition, a 22% increase in deposition rate was achieved. Stacking of multiple layers demonstrated the ability to create fully dense, three-dimensional structures, with directional metallurgical grain growth and uniform chemical structure.

Using wire shaping techniques and holographic optics to optimize deposition characteristics in wire-based laser cladding

PubMed Central

Higginson, R. L.; Tyrer, J. R.

2016-01-01

In laser cladding, the potential benefits of wire feeding are considerable. Typical problems with the use of powder, such as gas entrapment, sub-100% material density and low deposition rate are all avoided with the use of wire. However, the use of a powder-based source material is the industry standard, with wire-based deposition generally regarded as an academic curiosity. This is because, although wire-based methods have been shown to be capable of superior quality results, the wire-based process is more difficult to control. In this work, the potential for wire shaping techniques, combined with existing holographic optical element knowledge, is investigated in order to further improve the processing characteristics. Experiments with pre-placed wire showed the ability of shaped wire to provide uniformity of wire melting compared with standard round wire, giving reduced power density requirements and superior control of clad track dilution. When feeding with flat wire, the resulting clad tracks showed a greater level of quality consistency and became less sensitive to alterations in processing conditions. In addition, a 22% increase in deposition rate was achieved. Stacking of multiple layers demonstrated the ability to create fully dense, three-dimensional structures, with directional metallurgical grain growth and uniform chemical structure. PMID:28119550

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ouyang, J.H.; Li, X.; Lei, T.C.

The microstructure of a laser-clad TiC-Ni particle-reinforced coating on 1045 steel was studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and ion microprobe mass spectroscopy (IMMS). The microstructural constituents of the clad layers (CLs) were analyzed to be TiC particles, {gamma}-Ni primary dendrites, and interdendritic eutectics of {gamma}{sub E}-Ni plus M{sub 23}(CB){sub 6} and M{sub 6}(CB) carboborides. Three growth mechanisms of the original TiC particles were found: (1) stepped lateral growth at the edges, (2) radiated and cylindrically coupled growth at the edges, and (3) bridging growth of the clustered particles. Ordered and modulated structures were found inmore » the original TiC particles. In addition to the original TiC particles, fine TiC particles precipitated from the liquid phase and {gamma}-Ni solid solution during laser cladding. The microstructures of the bonding zones (BZs) were intimately associated with laser processing parameters. The BZs of the clad coatings can be categorized into three types according to the combination of the CL with heat-affected zone (HAZ): (1) straight interface combination, (2) zigzag connection, and (3) combination by partial melting of prior austenitic grain boundaries of the substrate. The microstructural evolution of the CLs was discussed. The formation and phase transformation models of the BZs were proposed.« less

Electrically Tunable Nd:YAG waveguide laser based on Graphene

PubMed Central

Ma, Linan; Tan, Yang; Akhmadaliev, Shavkat; Zhou, Shengqiang; Chen, Feng

2016-01-01

We demonstrate a tunable hybrid Graphene-Nd:YAG cladding waveguide laser exploiting the electro-optic and the Joule heating effects of Graphene. A cladding Nd:YAG waveguide was fabricated by the ion irradiation. The multi-layer graphene were transferred onto the waveguide surface as the saturable absorber to get the Q-switched pulsed laser oscillation in the waveguide. Composing with appropriate electrodes, graphene based capacitance and heater were formed on the surface of the Nd:YAG waveguide. Through electrical control of graphene, the state of the hybrid waveguide laser was turned on or off. And the laser operation of the hybrid waveguide was electrically tuned between the continuous wave laser and the nanosecond pulsed laser. PMID:27833114

Deep ultraviolet photoluminescence studies of aluminum-rich aluminum gallium nitride and aluminum nitride epilayers and nanostructures

NASA Astrophysics Data System (ADS)

Nepal, Neeraj

Deep ultraviolet (UV) photoluminescence (PL) spectroscopy has been employed to study optical properties of AlGaN alloys, undoped and doped AlN epilayers and nanostructure AlN photonics crystals (PCs). Using a deep UV laser system with an excitation wave length at 197 nm, continuous wave PL, temperature dependent, and time-resolved PL have been carried out on these AlGaN and AlN epilayers and nanostructures. We have measured the compositional and temperature dependence of the energy bandgap of AlxGa1-xN alloys covering the entire alloy range of x, 0 ≤ x ≤ 1 and fitted with the Varshni equation. Varshni coefficients, alpha and beta, in AlGaN alloys have a parabolic dependence with alloy concentration x. Based on the experimental data, an empirical relation was thus obtained for the energy gap of AlGaN alloys for the entire alloy concentration and at any temperature below 800 K. The exciton localization energy in AlxGa1-xN alloys the entire composition range (0 ≤ x ≤ 1) has been measured by fitting the band edge emission peak energy with the Varshni equation. Deviations of the excitonic emission peak energy from the Varshni equation at low temperatures provide directly the exciton localization energies, ELoc in AlGaN alloys. It was found that ELoc increases with x for x ≤ 0.7, and decreases with x for x ≥ 0.8. The relations between the exciton localization energy, the activation energy, and the emission linewidth have been established. It thus provides three different and independent methods to determine the exciton localization energies in AlGaN alloys. Impurity transitions in AlGaN alloys have also been investigated. Continuous wave (CW) PL spectra of Si and undoped AlGaN alloys reveals groups of impurity transitions that have been assigned to the recombination between shallow donors and an isolated triply charged cation-vacancy (VIII)3-, a doubly charged cation-vacancy-complex (VIII-complex)2- , and a singly charged cation-vacancy-complex (VIII-complex) -1. The energy levels of these deep acceptors in AlxGa 1-xN (0 ≤ x ≤ 1) alloys are pinned to a common energy level in the vacuum. AlGaN alloys predominantly exhibiting the bandedge and (V III-complex)1- transitions possess improved conductivities over those emitting predominantly (VIII)3- and (V III-complex)2- related transitions. These results thus answer the very basic question of high resistivity in Al-rich AlGaN alloys. Acceptor doped AlGaN alloys have been studied by deep UV PL. A PL emission line at 6.02 eV has been observed at 10 K in Mg-doped AlN. It is due to the recombination of an exciton bound to the neutral Mg acceptor (I1) with a binding energy, Ebx of 40 meV, which indicates large activation energy of the Mg acceptor. The observed large binding energy of the acceptor-bound exciton is consistent with relatively large binding energy of the Mg acceptor in AlN. With the energy level of 0.51 eV for Mg dopants in AlN, it is interesting and important to study other suitable acceptor dopants for AlN. Growth and optical studies of Zn-doped AlN epilayers has been carried out. The PL spectra of Zn-doped AlN epilayers exhibited two impurity emission lines at 5.40 and 4.50 eV, which were absent in undoped epilayers. They are assigned respectively, to the transitions of free electrons and electrons bound to triply positively charged nitrogen vacancies (0.90 eV deep) to the Zn0 acceptors. It was deduced that the Zn energy level is about 0.74 eV above the valence band edge, which is about 0.23 eV deeper than the Mg energy level in AlN. Nitrogen vacancies are the compensating defects in acceptor doped AlGaN alloys. A nitrogen vacancy (VN) related emission line was also observed in ion-implanted AlN at 5.87 eV and the energy level of singly charged VN1+ is found at 260 meV below the conduction band. As a consequence of large binding energy of VN 1+ as well as high formation energy, VN1+ in AlN cannot contribute significant n-type conductivity, which is consistent with experimental observation. The temperature dependent PL study of the bandedge emissions in GaN and AlN epilayers up to 800 K has been carried out, which reveals two distinctive activation processes. The first process occurring below Tt = 325 K (Tt = 500 K) for GaN (AlN) is due to the activation of free excitons to free carriers, whereas the second occurring above Tt with an activation energy of 0.29 eV (0.3 eV) for GaN (AlN) is believed to be associated with a higher lying conduction band (Gamma3) at about 0.3 eV above the conduction band minimum (Gamma1). These higher lying bands could affect device performance of GaN and AlN at elevated temperatures. Two-dimensional nanostructured AlN photonic crystals (PCs) with a varying periodicity/diameter down to 150 nm/75 nm have also been studied by deep UV PL. With PCs formation, a 20-fold enhancement in the band edge emission intensity at 208 nm over unpatterned AlN epilayer has been observed. The emission intensity increases with the decrease in the lattice constant of the AlN PCs. AlN PCs represent photonic crystals with highest (shortest) bandgap (wavelength) semiconductors, which open up new opportunities for exploring novel physical phenomena in the artificially structured photonic band gap material systems and their applications, particularly in the area of deep UV as well as nano-photonics.

Effects of Mg pre-flow, memory, and diffusion on the growth of p-GaN with MOCVD (Conference Presentation)

NASA Astrophysics Data System (ADS)

Tu, Charng-Gan; Chen, Hao-Tsung; Chen, Sheng-Hung; Chao, Chen-Yao; Kiang, Yean-Woei; Yang, Chih-Chung

2017-02-01

In MOCVD growth, two key factors for growing a p-type structure, when the modulation growth or delta-doping technique is used, include Mg memory and diffusion. With high-temperature growth (>900 degree C), doped Mg can diffuse into the under-layer. Also, due to the high-pressure growth and growth chamber coating in MOCVD, plenty Mg atoms exist in the growth chamber for a duration after Mg supply is ended. In this situation, Mg doping continues in the following designated un-doped layers. In this paper, we demonstrate the study results of Mg preflow, memory, and diffusion. The results show that pre-flow of Mg into the growth chamber can lead to a significantly higher Mg doping concentration in growing a p-GaN layer. In other words, a duration for Mg buildup is required for high Mg incorporation. Based on SIMS study, we find that with the pre-flow growth, a high- and a low-doping p-GaN layer are formed. The doping concentration difference between the two layers is about 10 times. The thickness of the high- (low-) doping layer is about 40 (65) nm. The growth of the high-doping layer starts 10-15 min after Mg supply starts (Mg buildup time). The diffusion length of Mg into the AlGaN layer beneath (Mg content reduced to <5%) is about 10 nm. The memory time of Mg in the growth chamber is about 60 min, after which the Mg doping concentration is reduced to <1%.

TE and TM guided modes in an air waveguide with negative-index-material cladding.

PubMed

D'Aguanno, G; Mattiucci, N; Scalora, M; Bloemer, M J

2005-04-01

We numerically demonstrate that a planar waveguide in which the inner layer is a gas with refractive index n0 = 1, sandwiched between two identical semi-infinite layers of a negative index material, can support both transverse electric and transverse magnetic guided modes with low losses. Recent developments in the design of metamaterials with an effective negative index suggest that this waveguide could operate in the infrared region of the spectrum.

Reflectance spectrum of plasmon waveguide interband cascade lasers and observation of the Berreman effect

NASA Astrophysics Data System (ADS)

Hinkey, Robert T.; Tian, Zhaobing; Yang, Rui Q.; Mishima, Tetsuya D.; Santos, Michael B.

2011-08-01

Noninvasive infrared reflectance measurements have been explored as a method for studying the optical properties of Si-doped cladding layers of plasmon waveguide interband cascade lasers. Measurements and theoretical simulations of the reflectance spectra were carried out on both the laser structures themselves, as well as highly doped InAs films grown on GaAs substrates. We have found that there is a sharp drop in the signal of the reflectance spectrum for p-polarized light oscillating near the plasma frequency. This is a manifestation of the so-called Berreman effect, which occurs at frequencies where the dielectric function approaches zero. This is distinct from the plasma edge feature seen in the reflectance spectrum of thick samples. The plasma frequencies of the highly doped layers were obtained by identifying the Berreman feature in the measured spectrum and fitting the spectrum to a modeled curve. Using a model for the effective mass, we were able to obtain measurements of the conduction electron concentration (in a range from 1018 to 1019 cm-3) in the waveguide cladding layers with values that were in good agreement with those found using Hall effect and SIMS measurements. The reflectance data was effectively used to achieve better calibration of the Si-doping during the growth of the n++-type InAs layers in the plasmon waveguide laser structures.

Defect-Enabled Electrical Current Leakage in Ultraviolet Light-Emitting Diodes

DOE PAGES

Moseley, Michael William; Allerman, Andrew A.; Crawford, Mary H.; ...

2015-04-13

The AlGaN materials system offers a tunable, ultra-wide bandgap that is exceptionally useful for high-power electronics and deep ultraviolet optoelectronics. Moseley et al. (pp. 723–726) investigate a structural defect known as an open-core threading dislocation or ''nanopipe'' that is particularly detrimental to devices that employ these materials. Furthermore, an AlGaN thin film was synthesized using metal-organic chemical-vapor deposition. Electrical current leakage is detected at a discrete point using a conductive atomic-force microscope (CAFM). However, no physical feature or abnormality at this location was visible by an optical microscope. The AlGaN thin film was then etched in hot phosphoric acid, andmore » the same location that was previously analyzed was revisited with the CAFM. The point that previously exhibited electrical current leakage had been decorated with a 1.1 μm wide hexagonal pit, which identified the site of electrical current leakage as a nanopipe and allows these defects to be easily observed by optical microscopy. Moreover, with this nanopipe identification and quantification strategy, the authors were able to correlate decreasing ultraviolet light-emitting diode optical output power with increasing nanopipe density.« less

Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Xiao-Hang, E-mail: xli@gatech.edu, E-mail: dupuis@gatech.edu; Kao, Tsung-Ting; Satter, Md. Mahbub

2015-01-26

We demonstrate transverse-magnetic (TM) dominant deep-ultraviolet (DUV) stimulated emission from photo-pumped AlGaN multiple-quantum-well lasers grown pseudomorphically on an AlN/sapphire template by means of photoluminescence at room temperature. The TM-dominant stimulated emission was observed at wavelengths of 239, 242, and 243 nm with low thresholds of 280, 250, and 290 kW/cm{sup 2}, respectively. In particular, the lasing wavelength of 239 nm is shorter compared to other reports for AlGaN lasers grown on foreign substrates including sapphire and SiC. The peak wavelength difference between the transverse-electric (TE)-polarized emission and TM-polarized emission was approximately zero for the lasers in this study, indicating the crossover of crystal-fieldmore » split-off hole and heavy-hole valence bands. The rapid variation of polarization between TE- and TM-dominance versus the change in lasing wavelength from 243 to 249 nm can be attributed to a dramatic change in the TE-to-TM gain coefficient ratio for the sapphire-based DUV lasers in the vicinity of TE-TM switch.« less

Extreme Radiation Hardness and Space Qualification of AlGaN Optoelectronic Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Ke-Xun; Balakrishnan, Kathik; Hultgren, Eric

2010-09-21

Unprecedented radiation hardness and environment robustness are required in the new generation of high energy density physics (HEDP) experiments and deep space exploration. National Ignition Facility (NIF) break-even shots will have a neutron yield of 1015 or higher. The Europa Jupiter System Mission (EJSM) mission instruments will be irradiated with a total fluence of 1012 protons/cm2 during the space journey. In addition, large temperature variations and mechanical shocks are expected in these applications under extreme conditions. Hefty radiation and thermal shields are required for Si and GaAs based electronics and optoelectronics devices. However, for direct illumination and imaging applications, shieldingmore » is not a viable option. It is an urgent task to search for new semiconductor technologies and to develop radiation hard and environmentally robust optoelectronic devices. We will report on our latest systematic experimental studies on radiation hardness and space qualifications of AlGaN optoelectronic devices: Deep UV Light Emitting Diodes (DUV LEDs) and solarblind UV Photodiodes (PDs). For custom designed AlGaN DUV LEDs with a central emission wavelength of 255 nm, we have demonstrated its extreme radiation hardness up to 2x1012 protons/cm2 with 63.9 MeV proton beams. We have demonstrated an operation lifetime of over 26,000 hours in a nitrogen rich environment, and 23,000 hours of operation in vacuum without significant power drop and spectral shift. The DUV LEDs with multiple packaging styles have passed stringent space qualifications with 14 g random vibrations, and 21 cycles of 100K temperature cycles. The driving voltage, current, emission spectra and optical power (V-I-P) operation characteristics exhibited no significant changes after the space environmental tests. The DUV LEDs will be used for photoelectric charge management in space flights. For custom designed AlGaN UV photodiodes with a central response wavelength of 255 nm, we have demonstrated its extreme radiation hardness using a 65 MeV proton beam line. The solar-blind AlGaN photodiodes retained ~50% responsivity up to 3x1012 protons/cm2 fluence. The Stanford-NSTec-SETI team will continue to develop radiation hard optoelectronic devices for applications under extreme conditions.« less

MOCVD-Grown InGaAsP Double Heterostructure Diode Lasers

DTIC Science & Technology

1993-08-01

assuming refractive index and its dispersion for InGaAsP and InGaP corresponding to the known values for AIGaAs compounds with the same bandgap [13...in the refractive index between the waveguide and cladding layers provides light confinement within the optical cavity. Separate optical and

Developing a laser shockwave model for characterizing diffusion bonded interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lacy, Jeffrey M., E-mail: Jeffrey.Lacy@inl.gov; Smith, James A., E-mail: Jeffrey.Lacy@inl.gov; Rabin, Barry H., E-mail: Jeffrey.Lacy@inl.gov

2015-03-31

The US National Nuclear Security Agency has a Global Threat Reduction Initiative (GTRI) with the goal of reducing the worldwide use of high-enriched uranium (HEU). A salient component of that initiative is the conversion of research reactors from HEU to low enriched uranium (LEU) fuels. An innovative fuel is being developed to replace HEU in high-power research reactors. The new LEU fuel is a monolithic fuel made from a U-Mo alloy foil encapsulated in Al-6061 cladding. In order to support the fuel qualification process, the Laser Shockwave Technique (LST) is being developed to characterize the clad-clad and fuel-clad interface strengthsmore » in fresh and irradiated fuel plates. LST is a non-contact method that uses lasers for the generation and detection of large amplitude acoustic waves to characterize interfaces in nuclear fuel plates. However, because the deposition of laser energy into the containment layer on a specimen's surface is intractably complex, the shock wave energy is inferred from the surface velocity measured on the backside of the fuel plate and the depth of the impression left on the surface by the high pressure plasma pulse created by the shock laser. To help quantify the stresses generated at the interfaces, a finite element method (FEM) model is being utilized. This paper will report on initial efforts to develop and validate the model by comparing numerical and experimental results for back surface velocities and front surface depressions in a single aluminum plate representative of the fuel cladding.« less

Evidence from EELS of oxygen in the nucleation layer of a MBE grown III-N HEMT[Electron Energy Loss Spectroscopy, Molecular Beam Epitaxy, High Electron Mobility Transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eustis, T.J.; Silcox, J.; Murphy, M.J.

The presence of oxygen throughout the nominally AlN nucleation layer of a RF assisted MBE grown III-N HEMT was revealed upon examination by Electron Energy Loss Spectroscopy (EELS) in a Scanning Transmission Electron Microscope (STEM). The nucleation layer generates the correct polarity (gallium face) required for producing a piezoelectric induced high mobility two dimensional electron gas at the AlGaN/GaN heterojunction. Only AlN or AlGaN nucleation layers have provided gallium face polarity in RF assisted MBE grown III-N's on sapphire. The sample was grown at Cornell University in a Varian GenII MBE using an EPI Uni-Bulb nitrogen plasma source. The nucleationmore » layer was examined in the Cornell University STEM using Annular Dark Field (ADF) imaging and Parallel Electron Energy Loss Spectroscopy (PEELS). Bright Field TEM reveals a relatively crystallographically sharp interface, while the PEELS reveal a chemically diffuse interface. PEELS of the nitrogen and oxygen K-edges at approximately 5-Angstrom steps across the GaN/AlN/sapphire interfaces reveals the presence of oxygen in the AlN nucleation layer. The gradient suggests that the oxygen has diffused into the nucleation region from the sapphire substrate forming this oxygen containing AlN layer. Based on energy loss near edge structure (ELNES), oxygen is in octahedral interstitial sites in the AlN and Al is both tetrahedrally and octahedrally coordinated in the oxygen rich region of the AlN.« less

GaN Light-Emitting Triodes (LETs) for High-Efficiency Hole Injection and for Assessment of the Physical Origin of the Efficiency Droop

DTIC Science & Technology

2007-07-06

quantum efficiency . In AlGaN-based UV LEDs, an electron-blocking layer (EBL) is frequently inserted between the p-type cladding layer and the active...me). This limits the hole injection efficiency into the active region, and hence internal quantum efficiency . Figure 1: (a) Schematic band...less efficient than along the lateral direction because most of the holes ionized from the acceptors are localized inside the quantum wells which are

Infrared wavelength dependence of leaky mode losses and steady state distribution in W-type glass optical fibers

NASA Astrophysics Data System (ADS)

Djordjevich, Alexandar; Simović, Ana; Savović, Svetislav; Drljača, Branko

2018-07-01

Infrared wavelength dependence of leaky mode losses and steady state distribution (SSD) in W-type glass optical fibers (doubly clad fibers with three layers) is investigated in this paper for parametrically varied depths and widths of the fiber's intermediate optical layer. This enables a tailoring of configuration of the W-type fiber to suit an application at hand. We have shown that the proposed W-type fiber has better transmission characteristics at longer infrared wavelengths.

Microstructure characteristics of Ni/WC composite cladding coatings

NASA Astrophysics Data System (ADS)

Yang, Gui-rong; Huang, Chao-peng; Song, Wen-ming; Li, Jian; Lu, Jin-jun; Ma, Ying; Hao, Yuan

2016-02-01

A multilayer tungsten carbide particle (WCp)-reinforced Ni-based alloy coating was fabricated on a steel substrate using vacuum cladding technology. The morphology, microstructure, and formation mechanism of the coating were studied and discussed in different zones. The microstructure morphology and phase composition were investigated by scanning electron microscopy, optical microscopy, X-ray diffraction, and energy-dispersive X-ray spectroscopy. In the results, the coating presents a dense and homogeneous microstructure with few pores and is free from cracks. The whole coating shows a multilayer structure, including composite, transition, fusion, and diffusion-affected layers. Metallurgical bonding was achieved between the coating and substrate because of the formation of the fusion and diffusion-affected layers. The Ni-based alloy is mainly composed of γ-Ni solid solution with finely dispersed Cr7C3/Cr23C6, CrB, and Ni+Ni3Si. WC particles in the composite layer distribute evenly in areas among initial Ni-based alloying particles, forming a special three-dimensional reticular microstructure. The macrohardness of the coating is HRC 55, which is remarkably improved compared to that of the substrate. The microhardness increases gradually from the substrate to the composite zone, whereas the microhardness remains almost unchanged in the transition and composite zones.

Highly-reliable operation of 638-nm broad stripe laser diode with high wall-plug efficiency for display applications

NASA Astrophysics Data System (ADS)

Yagi, Tetsuya; Shimada, Naoyuki; Nishida, Takehiro; Mitsuyama, Hiroshi; Miyashita, Motoharu

2013-03-01

Laser based displays, as pico to cinema laser projectors have gathered much attention because of wide gamut, low power consumption, and so on. Laser light sources for the displays are operated mainly in CW, and heat management is one of the big issues. Therefore, highly efficient operation is necessitated. Also the light sources for the displays are requested to be highly reliable. 638 nm broad stripe laser diode (LD) was newly developed for high efficiency and highly reliable operation. An AlGaInP/GaAs red LD suffers from low wall plug efficiency (WPE) due to electron overflow from an active layer to a p-cladding layer. Large optical confinement factor (Γ) design with AlInP cladding layers is adopted to improve the WPE. The design has a disadvantage for reliable operation because the large Γ causes high optical density and brings a catastrophic optical degradation (COD) at a front facet. To overcome the disadvantage, a window-mirror structure is also adopted in the LD. The LD shows WPE of 35% at 25°C, highest record in the world, and highly stable operation at 35°C, 550 mW up to 8,000 hours without any catastrophic optical degradation.

Enhancing the light-extraction efficiency of AlGaN deep-ultraviolet light-emitting diodes using highly reflective Ni/Mg and Rh as p-type electrodes

NASA Astrophysics Data System (ADS)

Maeda, Noritoshi; Yun, Joosun; Jo, Masafumi; Hirayama, Hideki

2018-04-01

Improving the light-extraction efficiency (LEE) is a major issue for the development of deep-ultraviolet (DUV) light-emitting diodes (LEDs). For this improvement, we introduced a transparent p-AlGaN contact layer and a reflective p-type electrode. In this work, we investigated the improvements obtained by replacing conventional Ni/Au p-type electrodes with highly reflective Ni/Mg and Rh electrodes. The external quantum efficiencies (EQEs) of 279 nm DUV LEDs were increased from 4.2 to 6.6% and from 3.4 to 4.5% by introducing Ni/Mg and Rh p-type electrodes, respectively. The LEE enhancement factors for the Ni/Mg and Rh electrodes were 1.6 and 1.4, respectively. These results are explained by the fact that the measured reflectances of the Ni/Mg and Rh electrodes were approximately 80 and 55%, respectively. Moreover, it was concluded that a passivation layer is required for Ni/Mg electrodes to prevent the degradation of the LED properties by the oxidation of Mg.

Far-infrared transmission in GaN, AlN, and AlGaN thin films grown by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ibanez, J.; Hernandez, S.; Alarcon-Llado, E.

2008-08-01

We present a far-infrared transmission study on group-III nitride thin films. Cubic GaN and AlN layers and c-oriented wurtzite GaN, AlN, and Al{sub x}Ga{sub 1-x}N (x<0.3) layers were grown by molecular beam epitaxy on GaAs and Si(111) substrates, respectively. The Berreman effect allows us to observe simultaneously the transverse optic and the longitudinal optic phonons of both the cubic and the hexagonal films as transmission minima in the infrared spectra acquired with obliquely incident radiation. We discuss our results in terms of the relevant electromagnetic theory of infrared transmission in cubic and wurtzite thin films. We compare the infrared resultsmore » with visible Raman-scattering measurements. In the case of films with low scattering volumes and/or low Raman efficiencies and also when the Raman signal of the substrate material obscures the weaker peaks from the nitride films, we find that the Berreman technique is particularly useful to complement Raman spectroscopy.« less

Increase in the diffusion length of minority carriers in Al{sub x}Ga{sub 1–x}N alloys ({sub x} = 0–0.1) fabricated by ammonia molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Malin, T. V., E-mail: mal-tv@mail.ru; Gilinsky, A. M.; Mansurov, V. G.

2015-10-15

The room-temperature diffusion length of minority carriers in n-Al{sub 0.1}Ga{sub 0.9}N layers grown by ammonia molecular beam epitaxy on sapphire (0001) substrates used in structures for ultraviolet photodetectors is studied. Measurements were performed using the spectral dependence of the photocurrent recorded in a built-in p–n junction for thin samples and using the induced electron-current procedure for films up to 2 µm thick. The results show that the hole diffusion length in n-AlGaN films is 120–150 nm, which is larger than in GaN films grown under similar growth conditions by a factor of 3–4. This result can be associated with themore » larger lateral sizes characteristic of hexagonal columns in AlGaN layers grown by molecular beam epitaxy. No increase in the hole diffusion length is observed for thicker films.« less

Athermal Photonic Devices and Circuits on a Silicon Platform

NASA Astrophysics Data System (ADS)

Raghunathan, Vivek

In recent years, silicon based optical interconnects has been pursued as an effective solution that can offer cost, energy, distance and bandwidth density improvements over copper. Monolithic integration of optics and electronics has been enabled by silicon photonic devices that can be fabricated using CMOS technology. However, high levels of device integration result in significant local and global temperature fluctuations that prove problematic for silicon based photonic devices. In particular, high temperature dependence of Si refractive index (thermo-optic (TO) coefficient) shifts the filter response of resonant devices that limit wavelength resolution in various applications. Active thermal compensation using heaters and thermo-electric coolers are the legacy solution for low density integration. However, the required electrical power, device foot print and number of input/output (I/O) lines limit the integration density. We present a passive approach to an athermal design that involves compensation of positive TO effects from a silicon core by negative TO effects of the polymer cladding. In addition, the design rule involves engineering the waveguide core geometry depending on the resonance wavelength under consideration to ensure desired amount of light in the polymer. We develop exact design requirements for a TO peak stability of 0 pm/K and present prototype performance of 0.5 pm/K. We explore the material design space through initiated chemical vapor deposition (iCVD) of 2 polymer cladding choices. We study the effect of cross-linking on the optical properties of a polymer and establish the superior performance of the co-polymer cladding compared to the homo-polymer. Integration of polymer clad devices in an electronic-photonic architecture requires the possibility of multi-layer stacking capability. We use a low temperature, high density plasma chemical vapor deposition of SiO2/SiN x to hermetically seal the athermal. Further, we employ visible light for post-fabrication trimming of athermal rings by sandwiching a thin photosensitive layer of As2S3 in between amorphous Si core and polymer top cladding. System design of an add-drop filter requires an optimum combination of channel counts performance and power handling capacity for maximum aggregate bandwidth. We establish the superior performance of athermal add-drop filter compared to a standard filter treating bandwidth as the figure-of-merit. (Copies available exclusively from MIT Libraries, libraries.mit.edu/docs - docs mit.edu)

FIBER AND INTEGRATED OPTICS: Investigation of a fiber-optic polarizer with a metal film and a dielectric buffer layer

NASA Astrophysics Data System (ADS)

Gelikonov, V. M.; Gusovskiĭ, D. D.; Konoplev, Yu N.; Leonov, V. I.; Mamaev, Yu A.; Turkin, A. A.

1990-01-01

A model of a plane-layer waveguide is used in a theoretical analysis of the attenuation coefficients of the TM0 and TE0 waves in a fiber-optic polarizer with a metal film and two dielectric buffer layers, one of which is the residual part of the fiber cladding. A report is given of the construction and experimental investigation of polarizers with a buffer layer of magnesium fluoride and an aluminum film operating at wavelengths of 0.63 and 0.81 μm and characterized by extinction coefficients of at least 53 and 46 dB, respectively, and by losses not exceeding 0.5 dB.

Nonvolatile Memories Using Quantum Dot (QD) Floating Gates Assembled on II-VI Tunnel Insulators

NASA Astrophysics Data System (ADS)

Suarez, E.; Gogna, M.; Al-Amoody, F.; Karmakar, S.; Ayers, J.; Heller, E.; Jain, F.

2010-07-01

This paper presents preliminary data on quantum dot gate nonvolatile memories using nearly lattice-matched ZnS/Zn0.95Mg0.05S/ZnS tunnel insulators. The GeO x -cladded Ge and SiO x -cladded Si quantum dots (QDs) are self-assembled site-specifically on the II-VI insulator grown epitaxially over the Si channel (formed between the source and drain region). The pseudomorphic II-VI stack serves both as a tunnel insulator and a high- κ dielectric. The effect of Mg incorporation in ZnMgS is also investigated. For the control gate insulator, we have used Si3N4 and SiO2 layers grown by plasma- enhanced chemical vapor deposition.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Djavid, Mehrdad; Mi, Zetian, E-mail: zetian.mi@mcgill.ca

The performance of conventional AlGaN deep ultraviolet light emitting diodes has been limited by the extremely low light extraction efficiency (<10%), due to the unique transverse magnetic (TM) polarized light emission. Here, we show that, by exploiting the lateral side emission, the extraction efficiency of TM polarized light can be significantly enhanced in AlGaN nanowire structures. Using the three-dimensional finite-difference time domain simulation, we demonstrate that the nanowire structures can be designed to inhibit the emission of guided modes and redirect trapped light into radiated modes. A light extraction efficiency of more than 70% can, in principle, be achieved bymore » carefully optimizing the nanowire size, nanowire spacing, and p-GaN thickness.« less

Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions

NASA Astrophysics Data System (ADS)

Pandit, Bhishma; Seo, Tae Hoon; Ryu, Beo Deul; Cho, Jaehee

2016-06-01

The current transport mechanism of graphene formed on AlxGa1-xN/GaN heterostructures with various Al mole fractions (x = 0.15, 0.20, 0.30, and 0.40) is investigated. The current-voltage measurement from graphene to AlGaN/GaN shows an excellent rectifying property. The extracted Schottky barrier height of the graphene/AlGaN/GaN contacts increases with the Al mole fraction in AlGaN. However, the current transport mechanism deviates from the Schottky-Mott theory owing to the deterioration of AlGaN crystal quality at high Al mole fractions confirmed by reverse leakage current measurement.

Strain and mechanical properties of the VCM multilayer sheet and their composites using the digital speckle correlation method.

PubMed

Zhang, Dehai; Xie, Guizhong; Li, Yanqin; Liu, Jianxiu

2015-09-01

The digital speckle correlation method (DSCM) is introduced to solve the challenging problems in the related geometric measurement. Theoretical calculations of strain are deduced using the DSCM. Corresponding strains along x and y directions are obtained from uniaxial tension experiments and digital speckle measurements, using the VCM nondeep drawing multilayer sheet, the VCM deep-drawing multilayer sheet, clad films, nondeep drawing substrate, and deep-drawing substrate sheet as the targeted experimental objects. The results show that the maximum strains along the x direction of the VCM nondeep drawing multilayer sheet, the VCM deep-drawing multilayer sheet, clad film, nondeep drawing substrate, and deep-drawing substrate sheet are 68.473%, 48.632%, 91.632%, 50.784% and 40.068%, respectively, while the maximum strains along the y direction are -2.657%, -15.381%, 2.826%, -9.780% and -7.783%, respectively. The mechanical properties of the VCM multilayer sheet are between those of the substrate and clad film, while mechanical properties of the VCM deep-drawing multilayer sheet are superior to those of the VCM nondeep drawing multi-layer sheet.

Manufacture of thin-walled clad tubes by pressure welding of roll bonded sheets

NASA Astrophysics Data System (ADS)

Schmidt, Hans Christian; Grydin, Olexandr; Stolbchenko, Mykhailo; Homberg, Werner; Schaper, Mirko

2017-10-01

Clad tubes are commonly manufactured by fusion welding of roll bonded metal sheets or, mechanically, by hydroforming. In this work, a new approach towards the manufacture of thin-walled tubes with an outer diameter to wall thickness ratio of about 12 is investigated, involving the pressure welding of hot roll bonded aluminium-steel strips. By preparing non-welded edges during the roll bonding process, the strips can be zip-folded and (cold) pressure welded together. This process routine could be used to manufacture clad tubes in a continuous process. In order to investigate the process, sample tube sections with a wall thickness of 2.1 mm were manufactured by U-and O-bending from hot roll bonded aluminium-stainless steel strips. The forming and welding were carried out in a temperature range between RT and 400°C. It was found that, with the given geometry, a pressure weld is established at temperatures starting above 100°C. The tensile tests yield a maximum bond strength at 340°C. Micrograph images show a consistent weld of the aluminium layer over the whole tube section.

Optically reconfigurable patterning for control of the propagation characteristics of a planar waveguide

NASA Astrophysics Data System (ADS)

Wang, Y.; Klittnick, A.; Clark, N. A.; Keller, P.

2008-10-01

We demonstrate an easily fabricated all-optical and freely reconfigurable method of controlling the propagating characteristics of the optic path within a planar waveguide with low insertion losses by employing the optical patterning of the refractive index of an erasable and rewriteable photosensitive liquid crystal polymer cladding layer.

Effect of Cl2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N

NASA Astrophysics Data System (ADS)

Lapeyrade, Mickael; Alamé, Sabine; Glaab, Johannes; Mogilatenko, Anna; Unger, Ralph-Stephan; Kuhn, Christian; Wernicke, Tim; Vogt, Patrick; Knauer, Arne; Zeimer, Ute; Einfeldt, Sven; Weyers, Markus; Kneissl, Michael

2017-09-01

In order to understand the electrical properties of V/Al/Ni/Au metal contacts to Si-doped Al0.75Ga0.25N layers, X-ray photoelectron spectroscopy analysis was performed on differently treated AlGaN:Si surfaces before metal deposition, and transmission electron microscopy was used to study the semiconductor-metal interface after contact annealing at 900 °C. Cl2 plasma etching of AlGaN increases the aluminum/nitrogen ratio at the surface, and Al oxide or oxynitride is always formed by any surface treatment applied after etching. After contact annealing, a complex interface structure including amorphous AlOx and different metal phases such as Al-Au-Ni, V-Al, and V2N were found. The electrical properties of the contacts were determined by thermionic emission and/or thermionic field emission in the low voltage regime. Nearly ohmic contacts on AlGaN surfaces exposed to a Cl2 plasma were only obtained by annealing the sample at a temperature of 815 °C under N2/NH3 prior to metallization. By this treatment, the oxygen contamination on the surface could be minimized, resulting in a larger semiconductor area to be in direct contact with metal phases such as Al-rich Al-Au-Ni or V-Al and leading to a contact resistivity of 2.5 × 10-2 Ω cm2. This treatment can be used to significantly reduce the operating voltage of current deep ultraviolet light emitting diodes which will increase their wall plug efficiency and lower the thermal stress during their operation.

Chalcogenide fiber-optic SPR chemical sensor with MoS2 monolayer, polymer clad, and polythiophene layer in NIR using selective ray launching

NASA Astrophysics Data System (ADS)

Sharma, Anuj K.; Kaur, Baljinder

2018-07-01

Surface plasmon resonance (SPR) based chalcogenide fiber-optic sensor with polymer clad and MoS2 monolayer is simulated and analyzed in near infrared (NIR) for detection of mixture of alcohols (ethanol and methanol) dissolved in water solution. The proposed fiber optic sensor is analyzed under angular interrogation method, which is based on selective ray (on-axis) launching of monochromatic light into the fiber core at varying angle followed by measuring the loss of power (in dB) after passing through the SPR probe region. The performance of the sensor is analyzed in terms of its figure of merit (FOM). The sensor's specificity towards alcohols along with considerably larger FOM is achieved by utilizing a polythiophene (PT) layer. The results indicate that longer NIR wavelength (λ) provides superior sensing performance. The sensor's performance is better for larger volume fraction of methanol in the water solution. The proposed fiber optic SPR sensor has the capability of providing much greater FOM compared with the previously-reported SPR sensors.

Microstructure characteristics and properties of in-situ formed TiC/Ni based alloy composite coating by laser cladding

NASA Astrophysics Data System (ADS)

Yang, Sen; Liu, Wenjin; Zhong, Minlin

2003-03-01

Different weight ratio of nickel based alloy, titanium and graphite powders were mixed and then laser cladded onto carbon steel substrate to produce a surface metal matrix composite layer. The experimental results showed that the coating was uniform, continuous and free of cracks. An excellent bonding between the coating and the carbon steel substrate was ensured by the strong metallurgical interface. The microstructures of the coating were mainly composed of γ-Ni dendrite, M23C6, a small amount of CrB, and dispersed TiC particles, and the in-situ generated TiCp/matrix interfaces were clean and free from deleterious surface reaction. The morphologies of TiC particles changed from the global, cluster to flower-like shape, the volume fraction of TiCp and the microhardness gradually increased from the bottom to the top of the coating layer, and the maximum microhardness of the coating was about HV0.2850, 3 times larger than that of steel substrate. The volume fraction of TiC particles increased with increasing of volume fraction of Ti and C too.

Laser rapid forming technology of high-performance dense metal components with complex structure

NASA Astrophysics Data System (ADS)

Huang, Weidong; Chen, Jing; Li, Yanming; Lin, Xin

2005-01-01

Laser rapid forming (LRF) is a new and advanced manufacturing technology that has been developed on the basis of combining high power laser cladding technology with rapid prototyping (RP) to realize net shape forming of high performance dense metal components without dies. Recently we have developed a set of LRF equipment. LRF experiments were carried out on the equipment to investigate the influences of processing parameters on forming characterizations systematically with the cladding powder materials as titanium alloys, superalloys, stainless steel, and copper alloys. The microstructure of laser formed components is made up of columnar grains or columnar dendrites which grow epitaxially from the substrate since the solid components were prepared layer by layer additionally. The result of mechanical testing proved that the mechanical properties of laser formed samples are similar to or even over that of forging and much better than that of casting. It is shown in this paper that LRF technology is providing a new solution for some difficult processing problems in the high tech field of aviation, spaceflight and automobile industries.

Electrochemical Migration Behavior of Copper-Clad Laminate and Electroless Nickel/Immersion Gold Printed Circuit Boards under Thin Electrolyte Layers

PubMed Central

Yi, Pan; Xiao, Kui; Ding, Kangkang; Dong, Chaofang; Li, Xiaogang

2017-01-01

The electrochemical migration (ECM) behavior of copper-clad laminate (PCB-Cu) and electroless nickel/immersion gold printed circuit boards (PCB-ENIG) under thin electrolyte layers of different thicknesses containing 0.1 M Na2SO4 was studied. Results showed that, under the bias voltage of 12 V, the reverse migration of ions occurred. For PCB-Cu, both copper dendrites and sulfate precipitates were found on the surface of FR-4 (board material) between two plates. Moreover, the Cu dendrite was produced between the two plates and migrated toward cathode. Compared to PCB-Cu, PCB-ENIG exhibited a higher tendency of ECM failure and suffered from seriously short circuit failure under high relative humidity (RH) environment. SKP results demonstrated that surface potentials of the anode plates were greater than those of the cathode plates, and those potentials of the two plates exhibited a descending trend as the RH increased. At the end of the paper, an electrochemical migration corrosion failure model of PCB was proposed. PMID:28772497

Effect of Auxiliary Preheating of the Filler Wire on Quality of Gas Metal Arc Stainless Steel Claddings

NASA Astrophysics Data System (ADS)

Shahi, Amandeep S.; Pandey, Sunil

2008-02-01

Weld cladding is a process for producing surfaces with good corrosion resistant properties by means of depositing/laying of stainless steels on low-carbon steel components with an objective of achieving maximum economy and enhanced life. The aim of the work presented here was to investigate the effect of auxiliary preheating of the solid filler wire in mechanized gas metal arc welding (GMAW) process (by using a specially designed torch to preheat the filler wire independently, before its emergence from the torch) on the quality of the as-welded single layer stainless steel overlays. External preheating of the filler wire resulted in greater contribution of arc energy by resistive heating due to which significant drop in the main welding current values and hence low dilution levels were observed. Metallurgical aspects of the as welded overlays such as chemistry, ferrite content, and modes of solidification were studied to evaluate their suitability for service and it was found that claddings obtained through the preheating arrangement, besides higher ferrite content, possessed higher content of chromium, nickel, and molybdenum and lower content of carbon as compared to conventional GMAW claddings, thereby giving overlays with superior mechanical and corrosion resistance properties. The findings of this study not only establish the technical superiority of the new process, but also, owing to its productivity-enhanced features, justify its use for low-cost surfacing applications.

Initial and Long-Term Movement of Cladding Installed Over Exterior Rigid Insulation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baker, P.

Changes in the International Energy Conservation Code (IECC) from 2009 to 2012 have resulted in the use of exterior rigid insulation becoming part of the prescriptive code requirements. With more jurisdictions adopting the 2012 IECC builders are going to finding themselves required to incorporate exterior insulation in the construction of their exterior wall assemblies. For thick layers of exterior insulation (levels greater than 1.5 inches), the use wood furring strips attached through the insulation back to the structure has been used by many contractors and designers as a means to provide a convenient cladding attachment location. However, there has beenmore » a significant resistance to its widespread implementation due to a lack of research and understanding of the mechanisms involved and potential creep effects of the assembly under the sustained dead load of a cladding. This research was an extension on previous research conducted by BSC in 2011, and 2012. Each year the understanding of the system discrete load component interactions, as well as impacts of environmental loading has increased. The focus of the research was to examine more closely the impacts of screw fastener bending on the total system capacity, effects of thermal expansion and contraction of materials on the compressive forces in the assembly, as well as to analyze a full years worth of cladding movement data from assemblies constructed in an exposed outdoor environment.« less

Laser cladding of tungsten carbides (Spherotene ®) hardfacing alloys for the mining and mineral industry

NASA Astrophysics Data System (ADS)

Amado, J. M.; Tobar, M. J.; Alvarez, J. C.; Lamas, J.; Yáñez, A.

2009-03-01

The abrasive nature of the mechanical processes involved in mining and mineral industry often causes significant wear to the associated equipment and derives non-negligible economic costs. One of the possible strategies to improve the wear resistance of the various components is the deposition of hardfacing layers on the bulk parts. The use of high power lasers for hardfacing (laser cladding) has attracted a great attention in the last decade as an alternative to other more standard methods (arc welding, oxy-fuel gas welding, thermal spraying). In laser cladding the hardfacing material is used in powder form. For high hardness applications Ni-, Co- or Fe-based alloys containing hard phase carbides at different ratios are commonly used. Tungsten carbides (WC) can provide coating hardness well above 1000 HV (Vickers). In this respect, commercially available WC powders normally contain spherical micro-particles consisting of crushed WC agglomerates. Some years ago, Spherotene ® powders consisting of spherical-fused monocrystaline WC particles, being extremely hard, between 1800 and 3000 HV, were patented. Very recently, mixtures of Ni-based alloy with Spherotene powders optimized for laser processing were presented (Technolase ®). These mixtures have been used in our study. Laser cladding tests with these powders were performed on low carbon steel (C25) substrates, and results in terms of microstructure and hardness will be discussed.

Investigation on the parameter optimization and performance of laser cladding a gradient composite coating by a mixed powder of Co50 and Ni/WC on 20CrMnTi low carbon alloy steel

NASA Astrophysics Data System (ADS)

Shi, Yan; Li, Yunfeng; Liu, Jia; Yuan, Zhenyu

2018-02-01

In this study, a gradient composite coating was manufactured on 20CrMnTi alloy steel by laser cladding. The laser power, cladding scan velocity and powder flow rate were selected as influencing factors of the orthogonal cladding experiments. The influencing factors were optimized by the comprehensive analysis of Taguchi OA and TOPSIS method. The high significant parameters and the predicted results were confirmed by the ANOVA method. The macromorphology and microstructures are characterized by using laser microscope, SEM, XRD and microhardness tester. Comparison tests of wear resistance of gradient composite coating, 20CrMnTi cemented quenching sample and the 20CrMnTi sample were conducted on the friction-wear tester. The results show that the phases are γ-Co solid solution, Co3B, M23C6 and etc. The interlayers and wear-resisting layer also contain new hard phases as WC, W2C. The microhardness of the gradient coating was increased to 3 times as compared with that of the 20CrMnTi substrate. The wear resistance of the gradient composite coating and 20CrMnTi cemented quenching sample was enhanced to 36.4 and 15.9 times as compared with that of the 20CrMnTi.

Field-induced strain degradation of AlGaN/GaN high electron mobility transistors on a nanometer scale

NASA Astrophysics Data System (ADS)

Lin, Chung-Han; Doutt, D. R.; Mishra, U. K.; Merz, T. A.; Brillson, L. J.

2010-11-01

Nanoscale Kelvin probe force microscopy and depth-resolved cathodoluminescence spectroscopy reveal an electronic defect evolution inside operating AlGaN/GaN high electron mobility transistors with degradation under electric-field-induced stress. Off-state electrical stress results in micron-scale areas within the extrinsic drain expanding and decreasing in electric potential, midgap defects increasing by orders-of-magnitude at the AlGaN layer, and local Fermi levels lowering as gate-drain voltages increase above a characteristic stress threshold. The pronounced onset of defect formation, Fermi level movement, and transistor degradation at the threshold gate-drain voltage of J. A. del Alamo and J. Joh [Microelectron. Reliab. 49, 1200 (2009)] is consistent with crystal deformation and supports the inverse piezoelectric model of high electron mobility transistor degradation.

Influence of high Mg doping on the microstructural and opto-electrical properties of AlGaN alloys

NASA Astrophysics Data System (ADS)

Xu, Qingjun; Zhang, Shiying; Liu, Bin; Tao, Tao; Xie, Zili; Xiu, Xiangqian; Chen, Dunjun; Chen, Peng; Han, Ping; Zheng, Youdou; Zhang, Rong

2018-07-01

Mg-doped AlxGa1-xN (x = 0.23 and 0.35) alloys have been grown on GaN templates with high temperature AlN (HT-AlN) interlayer by metalorganic chemical vapor deposition (MOCVD). A combination of secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM) indicates the formation of more inversion domains in the high Al mole fraction Mg-doped AlGaN alloys at Mg concentration ∼1020 cm-3. For Mg-doped Al0.23Ga0.77N epilayer, the analysis of cathodoluminescence (CL) spectra supports the existence of self-compensation effects due to the presence of intrinsic defects and Mg-related centers. The energy level of Mg is estimated to be around 193 meV from the temperature dependence of the resistivity measured by Hall effect experiments. And hole concentration and mobility are measured to be 1.2 × 1018 cm-3 and 0.56 cm2/V at room temperature, respectively. The reduction of acceptor activation energy and low hole mobility are attributed to inversion domains and self-compensation. Moreover, impurity band conduction is dominant in carrier transport up to a relatively higher temperature in high Al content Mg-doped AlGaN alloys.

Growth of AlGaN alloys under excess group III conditions: Formation of vertical nanorods

NASA Astrophysics Data System (ADS)

Singha, Chirantan; Sen, Sayantani; Pramanik, Pallabi; Palit, Mainak; Das, Alakananda; Roy, Abhra Shankar; Sen, Susanta; Bhattacharyya, Anirban

2018-01-01

Droplet Epitaxy of AlGaN nanostructures was investigated in this work. Growth was carried out by Plasma Assisted Molecular Beam Epitaxy (PA-MBE) under extreme group III rich conditions, where the excess metal remained on the growth surface and formed nanoscale metallic droplets due to the interplay of surface energy, surface diffusion and desorption, all of which are strongly dependent on the relative arrival rates of gallium and aluminum and the substrate temperature. Intermittent exposure of this metallic film to active nitrogen forms various types of nanostructures, whose morphology, composition and luminescence properties were evaluated. Our results indicate that for AlN, the droplet epitaxy process forms random arrays of uniform well oriented [0 0 0 1] nanorods with a height of ∼1 μm and a diameter of 250 nm. For AlGaN grown under excess gallium, and intermittent exposure to the active plasma, structures with diameters of 200 μm to 600 μm and a height of 80 nm were observed. We report the spontaneous formation of lateral concentric heterostructures under these conditions. A single photoluminescence (PL) peak was observed at about 260 nm with a room temperature to 4 K intensity ratio of ∼25%.

Broadband biphoton generation and statistics of quantum light in the UV-visible range in an AlGaN microring resonator.

PubMed

De Leonardis, Francesco; Soref, Richard A; Soltani, Mohammad; Passaro, Vittorio M N

2017-09-12

We present a physical investigation on the generation of correlated photon pairs that are broadly spaced in the ultraviolet (UV) and visible spectrum on a AlGaN/AlN integrated photonic platform which is optically transparent at these wavelengths. Using spontaneous four wave mixing (SFWM) in an AlGaN microring resonator, we show design techniques to satisfy the phase matching condition between the optical pump, the signal, and idler photon pairs, a condition which is essential and is a key hurdle when operating at short wavelength due to the strong normal dispersion of the material. Such UV-visible photon pairs are quite beneficial for interaction with qubit ions that are mostly in this wavelength range, and will enable heralding the photon-ion interaction. As a target application example, we present the systematic AlGaN microresonator design for generating signal and idler photon pairs using a blue wavelength pump, while the signal appears at the transition of ytterbium ion ( 171 Yb + , 369.5 nm) and the idler appears in the far blue or green range. The photon pairs have minimal crosstalk to the pump power due to their broad spacing in spectral wavelength, thereby relaxing the design of on-chip integrated filters for separating pump, signal and idler.

High power blue laser diodes on semipolar (202¯1¯) GaN substrates

NASA Astrophysics Data System (ADS)

Pourhashemi, Seyed Arash

High power blue laser didoes (LDs), among other applications, show the promise of realizing efficient and reliable solid state lighting systems. Since first GaN optoelectronic devices were demonstrated in early 1990s, GaN LDs were traditionally fabricated on polar c-plane. However in recent years there has been a growing interest in nonpolar and semipolar planes. Nonpolar and semipolar devices offer the prospect of achieving higher efficiencies though elimination or reduction of polarization-related electric fields. In this project I investigated semipolar (202 ¯1 ¯) plane of GaN for blue LDs fabrication. Results include blue LD (Lambda=450 nm) with highest output power, differential quantum efficiency (?d) and external quantum efficiency (EQE) reported for a GaN LD on a semipolar plane to date. Output power of 2.52 W, etad=50% and EQE=39% were achieved in pulsed mode and output power of 1.71 W was achieved in true CW mode. Moreover, use of indium tin oxide (ITO) as cladding layer in order to reduce the thickness of Mg-doped p-GaN layer was investigated. Blue LDs with ITO cladding were demonstrated in this work with highest output power, etad and EQE reported for a GaN LD with transparent conducting oxide (TCO) cladding layer to date. The lack of any natural cleavage plane orthogonal to the in-plane projection of the c-axis on semipolar planes has made Cl2-based dry etch processes the most common way to form mirror facets for semipolar LDs. However, mirror facets fabricated by dry etching can be inclined or rough. For this work, mechanical polishing was used to form LD mirror facets. The dependence of output power on current did not change with repeated CW measurements, indicating that the polished facets did not degrade under high power CW operation. These results show that polished facets are a viable alternative to cleaved or etched facets for high power CW semipolar LDs.

Effect of Dopant Activation on Device Characteristics of InGaN-based Light Emitting Diodes

NASA Astrophysics Data System (ADS)

Lacroce, Nicholas; Liu, Guangyu; Tan, Chee-Keong; Arif, Ronald A.; Lee, Soo Min; Tansu, Nelson

2015-03-01

Achieving high uniformity in growths and device characteristics of InGaN-based light-emitting diodes (LEDs) is important for large scale manufacturing. Dopant activation and maintaining control of variables affecting dopant activation are critical steps in the InGaN-based light emitting diodes (LEDs) fabrication process. In the epitaxy of large scale production LEDs, in-situ post-growth annealing is used for activating the Mg acceptor dopant in the p-AlGaN and p-GaN of the LEDs. However, the annealing temperature varies with respect to position in the reactor chamber, leading to severe uniform dopant activation issue across the devices. Thus, it is important to understand how the temperature gradient and the resulting variance in Mg acceptor activation will alter the device properties. In this work, we examine the effect of varying p-type doping levels in the p-GaN layers and AlGaN electron blocking layer of the GaN LEDs on the optoelectronic properties including the band profile, carrier concentration, current density, output power and quantum efficiency. By understanding the variations and its effect, the identification of the most critical p-type doping layer strategies to address this variation will be clarified.

The management of stress in MOCVD-grown InGaN/GaN LED multilayer structures on Si(1 1 1) substrates

NASA Astrophysics Data System (ADS)

Jiang, Quanzhong; Allsopp, Duncan W. E.; Bowen, Chris R.; Wang, Wang N.

2013-09-01

The tensile stress in light-emitting diode (LED)-on-Si(1 1 1) multilayer structures must be reduced so that it does not compromise the multiple quantum well emission wavelength uniformity and structural stability. In this paper it is shown for non-optimized LED structures grown on Si(1 1 1) substrates that both emission wavelength uniformity and structural stability can be achieved within the same growth process. In order to gain a deeper understanding of the stress distribution within such a structure, cross-sectional Raman and photo-luminescence spectroscopy techniques were developed. It is observed that for a Si:GaN layer grown on a low-temperature (LT) AlN intermediate layer there is a decrease in compressive stress with increasing Si:GaN layer thickness during MOCVD growth which leads to a high level of tensile stress in the upper part of the layer. This may lead to the development of cracks during cooling to room temperature. Such a phenomenon may be associated with annihilation of defects such as dislocations. Therefore, a reduction of dislocation intensity should take place at the early stage of GaN growth on an AlN or AlGaN layer in order to reduce a build up of tensile stress with thickness. Furthermore, it is also shown that a prolonged three dimensional GaN island growth on a LT AlN interlayer for the reduction of dislocations may result in a reduction in the compressive stress in the resulting GaN layer.

276 nm Substrate-Free Flip-Chip AlGaN Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Hwang, Seongmo; Morgan, Daniel; Kesler, Amanda; Lachab, Mohamed; Zhang, Bin; Heidari, Ahmad; Nazir, Haseeb; Ahmad, Iftikhar; Dion, Joe; Fareed, Qhalid; Adivarahan, Vinod; Islam, Monirul; Khan, Asif

2011-03-01

Lateral-conduction, substrate-free flip-chip (SFFC) light-emitting diodes (LEDs) with peak emission at 276 nm are demonstrated for the first time. The AlGaN multiple quantum well LED structures were grown by metal-organic chemical vapor deposition (MOCVD) on thick-AlN laterally overgrown on sapphire substrates. To fabricate the SFFC LEDs, a newly-developed laser-assisted ablation process was employed to separate the substrate from the LED chips. The chips had physical dimensions of 1100×900 µm2, and were comprised of four devices each with a 100×100 µm2 junction area. Electrical and optical characterization of the devices revealed no noticeable degradation to their performance due to the laser-lift-off process.

METHOD OF FORMING A FUEL ELEMENT FOR A NUCLEAR REACTOR

DOEpatents

Layer, E.H. Jr.; Peet, C.S.

1962-01-23

A method is given for preparing a fuel element for a nuclear reactor. The method includes the steps of sandblasting a body of uranium dioxide to roughen the surface thereof, depositing a thin layer of carbon thereon by thermal decomposition of methane, and cladding the uranium dioxide body with zirconium by gas pressure bonding. (AEC)

Copper cladding on polymer surfaces by ionization-assisted deposition

NASA Astrophysics Data System (ADS)

Kohno, Tomoki; Tanaka, Kuniaki; Usui, Hiroaki

2018-03-01

Copper thin films were prepared on poly(ethylene terephthalate) (PET) and polyimide (PI) substrates by an ionization-assisted vapor deposition method. The films had a polycrystalline structure, and their crystallite size decreased with increasing ion acceleration voltage V a. Ion acceleration was effective in reducing the surface roughness of the films. Cross-sectional transmission electron microscopy revealed that the copper/polymer interface showed increased corrugation with increasing V a. The increase in V a also induced the chemical modification of polymer chains of the PET substrate, but the PI substrate underwent smaller modification after ion bombardment. Most importantly, the adhesion strength between the copper film and the PET substrate increased with increasing V a. It was concluded that ionization-assisted deposition is a promising technique for preparing metal clad layers on flexible polymer substrates.

Capabilities to improve corrosion resistance of fuel claddings by using powerful laser and plasma sources

NASA Astrophysics Data System (ADS)

Borisov, V. M.; Trofimov, V. N.; Sapozhkov, A. Yu.; Kuzmenko, V. A.; Mikhaylov, V. B.; Cherkovets, V. Ye.; Yakushkin, A. A.; Yakushin, V. L.; Dzhumayev, P. S.

2016-12-01

The treatment conditions of fuel claddings of the E110 alloy by using powerful UV or IR laser radiation, which lead to the increase in the corrosion resistance at the high-temperature ( T = 1100°C) oxidation simulating a loss-of-coolant accident, are determined. The possibility of the complete suppression of corrosion under these conditions by using pulsed laser deposition of a Cr layer is demonstrated. The behavior of protective coatings of Al, Al2O3, and Cr planted on steel EP823 by pulsed laser deposition, which is planned to be used in the BREST-OD-300, is studied. The methods of the almost complete suppression of corrosion in liquid lead to the temperature of 720°C are shown.

Measure Guideline: Incorporating Thick Layers of Exterior Rigid Insulation on Walls

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lstiburek, Joseph; Baker, Peter

This measure guideline provides information about the design and construction of wall assemblies that use layers of rigid exterior insulation thicker than 1-½ inches and that require a secondary cladding attachment location exterior to the insulation. The guideline is separated into several distinct sections that cover: fundamental building science principles relating to the use of exterior insulation on wall assemblies; design principles for tailoring this use to the specific project goals and requirements; and construction detailing to increase understanding about implementing the various design elements.

Design and analysis of three-layer-core optical fiber

NASA Astrophysics Data System (ADS)

Zheng, Siwen; Liu, Yazhuo; Chang, Guangjian

2018-03-01

A three-layer-core single-mode large-mode-area fiber is investigated. The three-layer structure in the core, which is composed of a core-index layer, a cladding-index layer, and a depression-index layer, could achieve a large effective area Aeff while maintaining an ultralow bending loss without deteriorating cutoff behaviors. The single-mode large mode area of 100 to 330 μm2 could be achieved in the fiber. The effective area Aeff can be further enlarged by adjusting the layer parameters. Furthermore, the bending property could be improved in this three-layer-core structure. The bending loss could decrease by 2 to 4 orders of magnitude compared with the conventional step-index fiber with the same Aeff. These characteristics of three-layer-core fiber suggest that it can be used in large-mode-area wide-bandwidth high-capacity transmission or high-power optical fiber laser and amplifier in optical communications, which could be used for the basic physical layer structure of big data storage, reading, calculation, and transmission applications.

Low-temperature fabrication and characterization of a symmetric hybrid organic–inorganic slab waveguide for evanescent light microscopy

NASA Astrophysics Data System (ADS)

Agnarsson, Björn; Mapar, Mokhtar; Sjöberg, Mattias; Alizadehheidari, Mohammadreza; Höök, Fredrik

2018-06-01

Organic and inorganic solid materials form the building blocks for most of today’s high-technological instruments and devices. However, challenges related to dissimilar material properties have hampered the synthesis of thin-film devices comprised of both organic and inorganic films. We here give a detailed description of a carefully optimized processing protocol used for the construction of a three-layered hybrid organic–inorganic waveguide-chip intended for combined scattering and fluorescence evanescent-wave microscopy in aqueous environments using conventional upright microscopes. An inorganic core layer (SiO2 or Si3N4), embedded symmetrically in an organic cladding layer (CYTOP), aids simple, yet efficient in-coupling of light, and since the organic cladding layer is refractive index matched to water, low stray-light (background) scattering of the propagating light is ensured. Another major advantage is that the inorganic core layer makes the chip compatible with multiple well-established surface functionalization schemes that allows for a broad range of applications, including detection of single lipid vesicles, metallic nanoparticles or cells in complex environments, either label-free—by direct detection of scattered light—or by use of fluorescence excitation and emission. Herein, focus is put on a detailed description of the fabrication of the waveguide-chip, together with a fundamental characterization of its optical properties and performance, particularly in comparison with conventional epi illumination. Quantitative analysis of images obtained from both fluorescence and scattering intensities from surface-immobilized polystyrene nanoparticles in suspensions of different concentrations, revealed enhanced signal-to-noise and signal-to-background ratios for the waveguide illumination compared to the epi-illumination.

Effect of heat treatment on interfacial and mechanical properties of A6022/A7075/A6022 roll-bonded multi-layer Al alloy sheets

NASA Astrophysics Data System (ADS)

Cha, Joon-Hyeon; Kim, Su-Hyeon; Lee, Yun-Soo; Kim, Hyoung-Wook; Choi, Yoon Suk

2016-09-01

Multi-layered Al alloy sheets can exhibit unique properties by the combination of properties of component materials. A poor corrosion resistance of high strength Al alloys can be complemented by having a protective surface with corrosion resistant Al alloys. Here, a special care should be taken regarding the heat treatment of multi-layered Al alloy sheets because dissimilar Al alloys may exhibit unexpected interfacial reactions upon heat treatment. In the present study, A6022/A7075/A6022 sheets were fabricated by a cold roll-bonding process, and the effect of the heat treatment on the microstructure and mechanical properties was examined. The solution treatment gave rise to the diffusion of Zn, Mg, Cu and Si elements across the core/clad interface. In particular, the pronounced diffusion of Zn, which is a major alloying element (for solid-solution strengthening) of the A7075 core, resulted in a gradual hardness change across the core/clad interface. Mg2Si precipitates and the precipitate free zone were also formed near the interface after the heat treatment. The heat-treated sheet showed high strengths and reasonable elongation without apparent deformation misfit or interfacial delamination during the tensile deformation. The high strength of the sheet was mainly due to the T4 and T6 heat treatment of the A7075 core.

Enhanced Exciton and Photon Confinement in Ruddlesden-Popper Perovskite Microplatelets for Highly Stable Low-Threshold Polarized Lasing.

PubMed

Li, Mingjie; Wei, Qi; Muduli, Subas Kumar; Yantara, Natalia; Xu, Qiang; Mathews, Nripan; Mhaisalkar, Subodh G; Xing, Guichuan; Sum, Tze Chien

2018-06-01

At the heart of electrically driven semiconductors lasers lies their gain medium that typically comprises epitaxially grown double heterostuctures or multiple quantum wells. The simultaneous spatial confinement of charge carriers and photons afforded by the smaller bandgaps and higher refractive index of the active layers as compared to the cladding layers in these structures is essential for the optical-gain enhancement favorable for device operation. Emulating these inorganic gain media, superb properties of highly stable low-threshold (as low as ≈8 µJ cm -2 ) linearly polarized lasing from solution-processed Ruddlesden-Popper (RP) perovskite microplatelets are realized. Detailed investigations using microarea transient spectroscopies together with finite-difference time-domain simulations validate that the mixed lower-dimensional RP perovskites (functioning as cladding layers) within the microplatelets provide both enhanced exciton and photon confinement for the higher-dimensional RP perovskites (functioning as the active gain media). Furthermore, structure-lasing-threshold relationship (i.e., correlating the content of lower-dimensional RP perovskites in a single microplatelet) vital for design and performance optimization is established. Dual-wavelength lasing from these quasi-2D RP perovskite microplatelets can also be achieved. These unique properties distinguish RP perovskite microplatelets as a new family of self-assembled multilayer planar waveguide gain media favorable for developing efficient lasers. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Building America Case Study: Initial and Long-Term Movement of Cladding Installed Over Exterior Rigid Insulation (Fact Sheet)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

Changes in the International Energy Conservation Code (IECC) from 2009 to 2012 have resulted in the use of exterior rigid insulation becoming part of the prescriptive code requirements. With more jurisdictions adopting the 2012 IECC builders are going to finding themselves required to incorporate exterior insulation in the construction of their exterior wall assemblies. For thick layers of exterior insulation (levels greater than 1.5 inches), the use wood furring strips attached through the insulation back to the structure has been used by many contractors and designers as a means to provide a convenient cladding attachment location. However, there has beenmore » a significant resistance to its widespread implementation due to a lack of research and understanding of the mechanisms involved and potential creep effects of the assembly under the sustained dead load of a cladding. This research was an extension on previous research conducted by BSC in 2011, and 2012. Each year the understanding of the system discrete load component interactions, as well as impacts of environmental loading has increased. The focus of the research was to examine more closely the impacts of screw fastener bending on the total system capacity, effects of thermal expansion and contraction of materials on the compressive forces in the assembly, as well as to analyze a full years worth of cladding movement data from assemblies constructed in an exposed outdoor environment.« less

Impact of open-core threading dislocations on the performance of AlGaN metal-semiconductor-metal photodetectors

NASA Astrophysics Data System (ADS)

Walde, S.; Brendel, M.; Zeimer, U.; Brunner, F.; Hagedorn, S.; Weyers, M.

2018-04-01

The influence of open-core threading dislocations on the bias-dependent external quantum efficiency (EQE) of bottom-illuminated Al0.5Ga0.5N/AlN metal-semiconductor-metal (MSM) photodetectors (PDs) is presented. These defects originate at the Al0.5Ga0.5N/AlN interface and terminate on the Al0.5Ga0.5N surface as hexagonal prisms. They work as electrically active paths bypassing the Al0.5Ga0.5N absorber layer and therefore alter the behavior of the MSM PDs under bias voltage. This effect is included in the model of carrier collection in the MSM PDs showing a good agreement with the experimental data. While such dislocations usually limit the device performance, the MSM PDs benefit by high EQE at a reduced bias voltage while maintaining a low dark current.

A hole accelerator for InGaN/GaN light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ji, Yun; Wang, Liancheng; Zhu, Binbin; Zhang, Yiping; Lu, Shunpeng; Zhang, Xueliang; Hasanov, Namig; Sun, Xiao Wei; Demir, Hilmi Volkan

2014-10-01

The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low hole mobility makes the holes less energetic, which hinders the hole injection into the multiple quantum wells (MQWs) especially when a p-type AlGaN electron blocking layer (EBL) is adopted. In this work, we report a hole accelerator to accelerate the holes so that the holes can obtain adequate kinetic energy, travel across the p-type EBL, and then enter the MQWs more efficiently and smoothly. In addition to the numerical study, the effectiveness of the hole accelerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED.

Electrically controlled wire-channel GaN/AlGaN transistor for terahertz plasma applications

NASA Astrophysics Data System (ADS)

Cywiński, G.; Yahniuk, I.; Kruszewski, P.; Grabowski, M.; Nowakowski-Szkudlarek, K.; Prystawko, P.; Sai, P.; Knap, W.; Simin, G. S.; Rumyantsev, S. L.

2018-03-01

We report on a design of fin-shaped channel GaN/AlGaN field-effect transistors developed for studying resonant terahertz plasma oscillations. Unlike common two dimensional FinFET transistor design, the gates were deposited only to the sides of the two dimensional electron gas channel, i.e., metal layers were not deposited on the top of the AlGaN. This side gate configuration allowed us to electrically control the conductivity of the channel by changing its width while keeping the carrier density and mobility virtually unchanged. Computer simulations and analytical model describe well the general shape of the characteristics. The side gate control of the channel width of these transistors allowed us to eliminate the so-called oblique plasma wave modes and paves the way towards future terahertz detectors and emitters using high quality factor plasma wave resonances.

Demonstration of solar-blind Al{sub x}Ga{sub 1−x}N-based heterojunction phototransistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Lingxia; Tang, Shaoji; Liu, Changshan

2015-12-07

Al{sub 0.4}Ga{sub 0.6}N/Al{sub 0.65}Ga{sub 0.35}N heterojunction phototransistors have been fabricated from the epi-structure grown by low-pressure metal organic chemical vapor deposition on c-plane sapphire substrates. P-type conductivity of the AlGaN base layer was realized by using indium surfactant-assisted Mg-delta doping method. Regrowth technique was used to suppress the Mg memory effect on the n-type emitter. The fabricated devices with a 150-μm-diameter active area exhibited a bandpass spectral response between 235 and 285 nm. Dark current was measured to be less than 10 pA for bias voltages below 2.0 V. A high optical gain of 1.9 × 10{sup 3} was obtained at 6 V bias.

Estimation of photonic band gap in the hollow core cylindrical multilayer structure

NASA Astrophysics Data System (ADS)

Chourasia, Ritesh Kumar; Singh, Vivek

2018-04-01

The propagation characteristic of two hollow core cylindrical multilayer structures having high and low refractive index contrast of cladding regions have been studied and compared at two design wavelengths i.e. 1550 nm and 632.8 nm. With the help of transfer matrix method a relation between the incoming light wave and outgoing light wave has been developed using the boundary matching technique. In high refractive index contrast, small numbers of layers are sufficient to provide perfect band gap in both design wavelengths. The spectral position and width of band gap is highly depending on the optical path of incident light in all considered cases. For sensing application, the sensitivity of waveguide can be obtained either by monitoring the width of photonic band gap or by monitoring the spectral shift of photonic band gap. Change in the width of photonic band gap with the core refractive index is larger in high refractive index contrast of cladding materials. However, in the case of monitoring the spectral shift of band gap, the obtained sensitivity is large for low refractive index contrast of cladding materials and further it increases with increase of design wavelength.

Initial and Long-Term Movement of Cladding Installed Over Exterior Rigid Insulation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baker, Peter

Changes in the International Energy Conservation Code (IECC) from 2009 to 2012 have resulted in the use of exterior rigid insulation becoming part of the prescriptive code requirements. With more jurisdictions adopting the 2012 IECC builders will be required to incorporate exterior insulation in the construction of their exterior wall assemblies. For thick layers of exterior insulation (levels greater than 1.5 inches), the use of wood furring strips attached through the insulation back to the structure has been used by many contractors and designers as a means to provide a convenient cladding attachment location. This research was an extension onmore » previous research conducted by Building Science Corporation in 2011, and 2012. Each year the understanding of the system discrete load component interactions, as well as impacts of environmental loading, has increased. The focus of the research was to examine more closely the impacts of screw fastener bending on the total system capacity, effects of thermal expansion and contraction of materials on the compressive forces in the assembly, as well as to analyze a full year’s worth of cladding movement data from assemblies constructed in an exposed outdoor environment.« less

High sensitivity waveguide micro-displacement sensor based on intermodal interference

NASA Astrophysics Data System (ADS)

Ji, Lanting; He, Guobing; Gao, Yang; Xu, Yan; Liang, Honglei; Sun, Xiaoqiang; Wang, Xibin; Yi, Yunji; Chen, Changming; Wang, Fei; Zhang, Daming

2017-11-01

An optical waveguide displacement sensor according to core-cladding modes interference is theoretically proposed and experimentally demonstrated. Ultraviolet sensitive SU-8 polymer on silica is used as the guiding layer. It is covered by a 12 nm thick planar gold grating. The air gap sensing head which consists of the waveguide end and the single-mode fiber facet can realize the displacement detection by monitoring the wavelength dip shifting in transmission spectra. Cladding modes propagating in the exposed SU-8 can be effectively excited by the end-fire coupling because of the mode field mismatch between the SU-8 waveguide and lead-in fiber. A sinusoidal pattern transmission spectrum in C-band with the depth of over 14 dB can be observed due to the interference between the core and cladding modes. Peaks in the transmission spectrum vary continuously with the position offset of input fiber facet from the center of waveguide end. Both the sensitivity and the stability of sensing are enhanced by the introduction of nanometric gold gratings. The fabricated displacement sensor exhibits a high sensitivity of 2.3 nm μm-1, promising potentials for micromechanical processing and integrated optics application.

Development and characterization of laser surface cladding (Ti,W)C reinforced Ni-30Cu alloy composite coating on copper

NASA Astrophysics Data System (ADS)

Yan, Hua; Zhang, Peilei; Yu, Zhishui; Li, Chonggui; Li, Ruidi

2012-07-01

To improve the wear resistance of copper components, laser surface cladding (LSC) was applied to deposit (Ti,W)C reinforced Ni-30Cu alloy composite coating on copper using a cladding interlayer of Ni-30Cu alloy by Nd:YAG laser. The microstructure and phases of the composite coating were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray energy dispersive microanalysis (EDX). Microhardness tester and pin-on-disc wear tester were employed to evaluate the hardness and dry-sliding wear resistance. The results show that crack-free composite coating with metallurgical bonding to the copper substrate is obtained. Phases identified in the (Ti,W)C-reinforced Ni-30Cu alloy composite layer are composed of TiWC2 reinforcements and (Ni,Cu) solid solution. TiWC2 reinforcements are distributed uniformly in the (Ni,Cu) solid solution matrix with dendritic morphology in the upper region and with particles in the mid-lower region. The microhardness and wear properties of the composite coating are improved significantly in comparison to the as-received copper substrate due to the addition of 50 wt% (Ti,W)C multicarbides.

Single Mode SU8 Polymer Based Mach-Zehnder Interferometer for Bio-Sensing Application

NASA Astrophysics Data System (ADS)

Boiragi, Indrajit; Kundu, Sushanta; Makkar, Roshan; Chalapathi, Krishnamurthy

2011-10-01

This paper explains the influence of different parameters to the sensitivity of an optical waveguide Mach-Zehnder Interferometer (MZI) for real time detection of biomolecules. The sensing principle is based on the interaction of evanescence field with the biomolecules that get immobilized on sensing arm. The sensitivity has been calculated by varying the sensing window length, wavelength and concentration of bio-analyte. The maximum attainable sensitivity for the preferred design is the order of 10-8 RIU at 840 nm wavelength with a sensing window length of 1cm. All the simulation work has been carried out with Opti-BPMCAD for the optimization of MZI device parameters. The SU8 polymers are used as a core and clad material to fabricate the waveguide. The refractive index of cladding layer is optimized by varying the curing temperature for a fixed time period and the achieved index difference between core and clad is Δn = 0.0151. The fabricated MZI device has been characterized with LASER beam profiler at 840 nm wavelength. This study demonstrates the effectiveness of the different parameter to the sensitivity of a single mode optical waveguide Mach-Zehnder Interferometer for bio-sensing application.

Modal reduction in single crystal sapphire optical fiber

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Yujie; Hill, Cary; Liu, Bo

2015-10-12

A new type of single crystal sapphire optical fiber (SCSF) design is proposed to reduce the number of guided modes via a highly dispersive cladding with a periodic array of high and low index regions in the azimuthal direction. The structure retains a “core” region of pure single crystal (SC) sapphire in the center of the fiber and a “cladding” region of alternating layers of air and SC sapphire in the azimuthal direction that is uniform in the radial direction. The modal characteristics and confinement losses of the fundamental mode were analyzed via the finite element method by varying themore » effective core diameter and the dimensions of the “windmill” shaped cladding. The simulation results showed that the number of guided modes were significantly reduced in the “windmill” fiber design, as the radial dimension of the air and SC sapphire cladding regions increase with corresponding decrease in the azimuthal dimension. It is anticipated that the “windmill” SCSF will readily improve the performance of current fiber optic sensors in the harsh environment and potentially enable those that were limited by the extremely large modal volume of unclad SCSF.« less

Nonequilibrium synthesis of NbAl3 and Nb-Al-V alloys by laser cladding. II - Oxidation behavior

NASA Technical Reports Server (NTRS)

Haasch, R. T.; Tewari, S. K.; Sircar, S.; Loxton, C. M.; Mazumder, J.

1992-01-01

Isothermal oxidation behaviors of NbAl3 alloy synthesized by laser cladding were investigated at temperatures between 800 and 1400 C, and the effect of vanadium microalloying on the oxidation of the laser-clad alloy was examined. The oxidation kinetics of the two alloys were monitored using thermal gravimetric weight gain data, and the bulk and surface chemistries were analyzed using XRD and XPS, respectively. It was found that NbAl3 did not form an exclusive layer of protective Al2O3. The oxidation products at 800 C were found to be a mixture of Nb2O5 and Al2O3. At 1200 C, a mixture of NbAlO4, Nb2O5, and Al2O3 formed; and at 1400 C, a mixture of NbAlO4, Al2O3, NbO2, NbO(2.432), and Nb2O5 formed. The addition of V led to a dramatic increase of the oxidation rate, which may be related to the formation of (Nb, V)2O5 and VO2, which grows in preference to protective Al2O3.

11-GHz waveguide Nd:YAG laser CW mode-locked with single-layer graphene.

PubMed

Okhrimchuk, Andrey G; Obraztsov, Petr A

2015-06-08

We report stable, passive, continuous-wave (CW) mode-locking of a compact diode-pumped waveguide Nd:YAG laser with a single-layer graphene saturable absorber. The depressed cladding waveguide in the Nd:YAG crystal is fabricated with an ultrafast laser inscription method. The saturable absorber is formed by direct deposition of CVD single-layer graphene on the output coupler. The few millimeter-long cavity provides generation of 16-ps pulses with repetition rates in the GHz range (up to 11.3 GHz) and 12 mW average power. Stable CW mode-locking operation is achieved by controlling the group delay dispersion in the laser cavity with a Gires-Tournois interferometer.

Broadband wavelength conversion in hydrogenated amorphous silicon waveguide with silicon nitride layer

NASA Astrophysics Data System (ADS)

Wang, Jiang; Li, Yongfang; Wang, Zhaolu; Han, Jing; Huang, Nan; Liu, Hongjun

2018-01-01

Broadband wavelength conversion based on degenerate four-wave mixing is theoretically investigated in a hydrogenated amorphous silicon (a-Si:H) waveguide with silicon nitride inter-cladding layer (a-Si:HN). We have found that enhancement of the non-linear effect of a-Si:H waveguide nitride intermediate layer facilitates broadband wavelength conversion. Conversion bandwidth of 490 nm and conversion efficiency of 11.4 dB were achieved in a numerical simulation of a 4 mm-long a-Si:HN waveguide under 1.55 μm continuous wave pumping. This broadband continuous-wave wavelength converter has potential applications in photonic networks, a type of readily manufactured low-cost highly integrated optical circuits.

11-GHz waveguide Nd:YAG laser CW mode-locked with single-layer graphene

PubMed Central

Okhrimchuk, Andrey G.; Obraztsov, Petr A.

2015-01-01

We report stable, passive, continuous-wave (CW) mode-locking of a compact diode-pumped waveguide Nd:YAG laser with a single-layer graphene saturable absorber. The depressed cladding waveguide in the Nd:YAG crystal is fabricated with an ultrafast laser inscription method. The saturable absorber is formed by direct deposition of CVD single-layer graphene on the output coupler. The few millimeter-long cavity provides generation of 16-ps pulses with repetition rates in the GHz range (up to 11.3 GHz) and 12 mW average power. Stable CW mode-locking operation is achieved by controlling the group delay dispersion in the laser cavity with a Gires–Tournois interferometer. PMID:26052678

Corrosion behavior of pre-oxidized HR-224 superalloy in supercritical water environment at 700 °C

NASA Astrophysics Data System (ADS)

Liu, Yu-Chen; Chen, Shih-Ming; Ouyang, Fan-Yi; Kai, Ji-Jung

2018-07-01

Corrosion of cladding materials in supercritical water (SCW) environment is a key reliability issue for the safety of nuclear power plant. In this study, we propose to use the pre-oxidized treatment to provide better corrosion resistance of cladding materials in the SCW environment. The nickel-based superalloy HR-224 was first pre-oxidized in flowing air at 982 °C for 100 h to establish a continuous and dense scales and then exposed in the SCW environment with high oxygen content (8.3 ppm) at 700 °C and 24.8 MPa for cyclic oxidation testing up to 1300 h. The pre-oxidized samples exhibit better corrosion resistance than as-received samples in the SCW environment. After pre-oxidizing process, triple scales, Ni(Cr, Fe)2O4 spinel/Cr2O3/α-Al2O3 were observed, and the growth of inner α-Al2O3 layer is predominant in the SCW environment. The α-Al2O3 layer in pre-oxidized samples was found to effectively decrease outward migration of metal ions in Alloy HR-224 and thus provides better corrosion resistance than as-received samples in SCW environment.

GaN Schottky diodes with single-crystal aluminum barriers grown by plasma-assisted molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tseng, H. Y.; Yang, W. C.; Lee, P. Y.

2016-08-22

GaN-based Schottky barrier diodes (SBDs) with single-crystal Al barriers grown by plasma-assisted molecular beam epitaxy are fabricated. Examined using in-situ reflection high-energy electron diffractions, ex-situ high-resolution x-ray diffractions, and high-resolution transmission electron microscopy, it is determined that epitaxial Al grows with its [111] axis coincident with the [0001] axis of the GaN substrate without rotation. In fabricated SBDs, a 0.2 V barrier height enhancement and 2 orders of magnitude reduction in leakage current are observed in single crystal Al/GaN SBDs compared to conventional thermal deposited Al/GaN SBDs. The strain induced piezoelectric field is determined to be the major source of themore » observed device performance enhancements.« less

CO2 detection using polyethylenimine/starch functionalized AlGaN /GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Chang, C. Y.; Kang, B. S.; Wang, H. T.; Ren, F.; Wang, Y. L.; Pearton, S. J.; Dennis, D. M.; Johnson, J. W.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.

2008-06-01

AlGaN /GaN high electron mobility transistors (HEMTs) functionalized with polyethylenimine/starch were used for detecting CO2 with a wide dynamic range of 0.9%-50% balanced with nitrogen at temperatures from 46to220°C. Higher detection sensitivity to CO2 gas was achieved at higher testing temperatures. At a fixed source-drain bias voltage of 0.5V, drain-source current of the functionalized HEMTs showed a sublinear correlation upon exposure to different CO2 concentrations at low temperature. The superlinear relationship was at high temperature. The sensor exhibited a reversible behavior and a repeatable current change of 32 and 47μA with the introduction of 28.57% and 37.5% CO2 at 108°C, respectively.

Effects of Laser Power Level on Microstructural Properties and Phase Composition of Laser-Clad Fluorapatite/Zirconia Composite Coatings on Ti6Al4V Substrates.

PubMed

Chien, Chi-Sheng; Liu, Cheng-Wei; Kuo, Tsung-Yuan

2016-05-17

Hydroxyapatite (HA) is one of the most commonly used materials for the coating of bioceramic titanium (Ti) alloys. However, HA has poor mechanical properties and a low bonding strength. Accordingly, the present study replaces HA with a composite coating material consisting of fluorapatite (FA) and 20 wt % yttria (3 mol %) stabilized zirconia (ZrO₂, 3Y-TZP). The FA/ZrO₂ coatings are deposited on Ti6Al4V substrates using a Nd:YAG laser cladding system with laser powers and travel speeds of 400 W/200 mm/min, 800 W/400 mm/min, and 1200 W/600 mm/min, respectively. The experimental results show that a significant inter-diffusion of the alloying elements occurs between the coating layer (CL) and the transition layer (TL). Consequently, a strong metallurgical bond is formed between them. During the cladding process, the ZrO₂ is completely decomposed, while the FA is partially decomposed. As a result, the CLs of all the specimens consist mainly of FA, Ca₄(PO₄)₂O (TTCP), CaF₂, CaZrO₃, CaTiO₃ and monoclinic phase ZrO₂ (m-ZrO₂), together with a small amount of θ-Al₂O₃. As the laser power is increased, CaO, CaCO₃ and trace amounts of tetragonal phase ZrO₂ (t-ZrO₂) also appear. As the laser power increases from 400 to 800 W, the CL hardness also increases as a result of microstructural refinement and densification. However, at the highest laser power of 1200 W, the CL hardness reduces significantly due to the formation of large amounts of relatively soft CaO and CaCO₃ phase.

Capabilities to improve corrosion resistance of fuel claddings by using powerful laser and plasma sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

Borisov, V. M., E-mail: borisov@triniti.ru; Trofimov, V. N.; Sapozhkov, A. Yu.

2016-12-15

The treatment conditions of fuel claddings of the E110 alloy by using powerful UV or IR laser radiation, which lead to the increase in the corrosion resistance at the high-temperature (T = 1100°C) oxidation simulating a loss-of-coolant accident, are determined. The possibility of the complete suppression of corrosion under these conditions by using pulsed laser deposition of a Cr layer is demonstrated. The behavior of protective coatings of Al, Al{sub 2}O{sub 3}, and Cr planted on steel EP823 by pulsed laser deposition, which is planned to be used in the BREST-OD-300, is studied. The methods of the almost complete suppressionmore » of corrosion in liquid lead to the temperature of 720°C are shown.« less

A modified hexagonal photonic crystal fiber for terahertz applications

NASA Astrophysics Data System (ADS)

Islam, Md. Saiful; Sultana, Jakeya; Faisal, Mohammad; Islam, Mohammad Rakibul; Dinovitser, Alex; Ng, Brian W.-H.; Abbott, Derek

2018-05-01

We present a Zeonex based highly birefringent and dispersion flattened porous core photonic crystal fiber (PC-PCF) for polarization preserving applications in the terahertz region. In order to facilitate birefringence, an array of elliptical shaped air holes surrounded by porous cladding is introduced. The porous cladding comprises circular air-holes in a modified hexagonal arrangement. The transmission characteristics of the proposed PCF are investigated using a full-vector finite element method with perfectly matched layer (PML) absorbing boundary conditions. Simulation results show a high birefringence of 0.086 and an ultra-flattened dispersion variation of ± 0.03 ps/THz/cm at optimal design parameters. Besides, a number of other important wave-guiding properties including frequency dependence of the effective material loss (EML), confinement loss, and effective area are also investigated to assess the fiber's effectiveness as a terahertz waveguide.

Studies on scintillating fiber response

NASA Astrophysics Data System (ADS)

Albers, D.; Bisplinghoff, J.; Bollmann, R.; Büßer, K.; Cloth, P.; Diehl, O.; Dohrmann, F.; Drüke, V.; Engelhardt, H. P.; Ernst, J.; Eversheim, P. D.; Filges, D.; Gasthuber, M.; Gebel, R.; Greiff, J.; Groß, A.; Groß-Hardt, R.; Heine, A.; Heider, S.; Hinterberger, F.; Igelbrink, M.; Jahn, R.; Jeske, M.; Langkau, R.; Lindlein, J.; Maier, R.; Maschuw, R.; Mayer-Kuckuk, T.; Mertler, G.; Metsch, B.; Mosel, F.; Müller, M.; Münstermann, M.; Paetz gen. Schieck, H.; Petry, H. R.; Prasuhn, D.; Rohdjeß, H.; Rosendaal, D.; Roß, U.; von Rossen, P.; Scheid, H.; Schirm, N.; Schulz-Rojahn, M.; Schwandt, F.; Scobel, W.; Steeg, B.; Sterzenbach, G.; Trelle, H. J.; Wellinghausen, A.; Wiedmann, W.; Woller, K.; Ziegler, R.

1996-02-01

Scintillating fibers of type Bicron BCF-12 with 2 × 2 mm 2 cross section, up to 600 mm length, and PMMA cladding have been tested, in conjunction with the multi-channel photomultiplier Hamamatsu R 4760, with minimum ionizing electrons. The impact of cladding, extramural absorbers and/or wrapping on the light attenuation and photoelectron yield is studied in detail. Fibers have been circularly bent with radii of 171 mm and arranged in two layers to bundles forming granulated scintillator rings. Their performance in the EDDA experiment at COSY for detection of high energy protons revealed typically more than 9 (6) photoelectrons per fiber from bundles with (without) mirror on the rear side, guaranteeing detection efficiencies >99% and full compatibility with corresponding solid scintillator rings. The time resolution of 3.4 ns FWHM per fiber read out is essentially due to the R 4760.

Characterization of long-range plasmonic waveguides at visible to near-infrared regime

NASA Astrophysics Data System (ADS)

Huang, Sheng-Ting; Lai, Chien-Chih; Sheu, Fang-Wen; Tsai, Wan-Shao

2017-12-01

Long-range surface plasmon polariton waveguides composed with thin gold stripes embedded in SU-8 polymer cladding with various stripe widths were fabricated. Material properties of the polymer cladding layer, gold thin film, and the device structures were discussed. Optical properties based on modal propagation were characterized at visible to near-infrared wavelengths. The measured propagation losses of waveguide widths from 3 to 9 μm at 633, 785, and 1550 nm are 7.5-18.8, 6.8-12.5, and 1.9-3.9 dB/mm, respectively. Guiding mode properties such as overlap integrals between the simulated and the measured fields and the polarization extinction ratios of the waveguides with different stripe widths were investigated at the telecommunication wavelength. Good accordance between the measurement and simulation results was presented.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bachman, Daniel; Chen, Zhijiang; Wang, Christopher

Phase errors caused by fabrication variations in silicon photonic integrated circuits are an important problem, which negatively impacts device yield and performance. This study reports our recent progress in the development of a method for permanent, postfabrication phase error correction of silicon photonic circuits based on femtosecond laser irradiation. Using beam shaping technique, we achieve a 14-fold enhancement in the phase tuning resolution of the method with a Gaussian-shaped beam compared to a top-hat beam. The large improvement in the tuning resolution makes the femtosecond laser method potentially useful for very fine phase trimming of silicon photonic circuits. Finally, wemore » also show that femtosecond laser pulses can directly modify silicon photonic devices through a SiO 2 cladding layer, making it the only permanent post-fabrication method that can tune silicon photonic circuits protected by an oxide cladding.« less

Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale.

PubMed

Fisichella, Gabriele; Greco, Giuseppe; Roccaforte, Fabrizio; Giannazzo, Filippo

2014-08-07

Vertical heterostructures combining two or more graphene (Gr) layers separated by ultra-thin insulating or semiconductor barriers represent very promising systems for next generation electronics devices, due to the combination of high speed operation with wide-range current modulation by a gate bias. They are based on the specific mechanisms of current transport between two-dimensional-electron-gases (2DEGs) in close proximity. In this context, vertical devices formed by Gr and semiconductor heterostructures hosting an "ordinary" 2DEG can be also very interesting. In this work, we investigated the vertical current transport in Gr/Al(0.25)Ga(0.75)N/GaN heterostructures, where Gr is separated from a high density 2DEG by a ∼ 24 nm thick AlGaN barrier layer. The current transport from Gr to the buried 2DEG was characterized at nanoscale using conductive atomic force microscopy (CAFM) and scanning capacitance microscopy (SCM). From these analyses, performed both on Gr/AlGaN/GaN and on AlGaN/GaN reference samples using AFM tips with different metal coatings, the Gr/AlGaN Schottky barrier height ΦB and its lateral uniformity were evaluated, as well as the variation of the carrier densities of graphene (ngr) and AlGaN/GaN 2DEG (ns) as a function of the applied bias. A low Schottky barrier (∼ 0.40 eV) with excellent spatial uniformity was found at the Gr/AlGaN interface, i.e., lower compared to the measured values for metal/AlGaN contacts, which range from ∼ 0.6 to ∼ 1.1 eV depending on the metal workfunction. The electrical behavior of the Gr/AlGaN contact has been explained by Gr interaction with AlGaN donor-like surface states located in close proximity, which are also responsible of high n-type Gr doping (∼ 1.3 × 10(13) cm(-2)). An effective modulation of ns by the Gr Schottky contact was demonstrated by capacitance analysis under reverse bias. From this basic understanding of transport properties in Gr/AlGaN/GaN heterostructures, novel vertical field effect transistor concepts with high operating speed and I(on)/I(off) ratio can be envisaged.

Color Anodizing of Titanium Coated Rolled Carbon Steel Plate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sarajan, Zohair; Mobarakeh, Hooman Nikbakht; Namiranian, Sohrab

As an important kind of structural materials, the titanium cladded steel plates have the advantages of both metals and have been applied in aviation, spaceflight, chemical and nuclear industries. In this study, the specimens which were prepared under soldering mechanism during rolling were anodized by electrochemical process under a given conditions. The color anodizing takes place by physical phenomenon of color interference. Part of incident light on the titanium oxide is reflected and the other part reflects inside coated titanium layer. Major part of the light which reflects from titanium-oxide interface, reflects again inside of the oxide layer.

Growth of crack-free GaN films on Si(111) substrate by using Al-rich AlN buffer layer

NASA Astrophysics Data System (ADS)

Lu, Yuan; Cong, Guangwei; Liu, Xianglin; Lu, Da-Cheng; Zhu, Qinsheng; Wang, Xiaohui; Wu, Jiejun; Wang, Zhanguo

2004-11-01

GaN epilayers were grown on Si(111) substrate by metalorganic chemical vapor deposition. By using the Al-rich AlN buffer which contains Al beyond stoichiometry, crack-free GaN epilayers with 1 μm thickness were obtained. Through x-ray diffraction (XRD) and secondary ion mass spectroscopy analyses, it was found that a lot of Al atoms have diffused into the under part of the GaN epilayer from the Al-rich AlN buffer, which results in the formation of an AlxGa1-xN layer at least with 300 nm thickness in the 1 μm thick GaN epilayer. The Al fraction x was estimated by XRD to be about 2.5%. X-ray photoelectron spectroscopy depth analysis was also applied to investigate the stoichiometry in the Al-rich buffer before GaN growth. It is suggested that the underlayer AlxGa1-xN originated from Al diffusion probably provides a compressive stress to the upper part of the GaN epilayer, which counterbalances a part of tensile stress in the GaN epilayer during cooling down and consequently reduces the cracks of the film effectively. The method using the Al diffusion effect to form a thick AlGaN layer is really feasible to achieve the crack-free GaN films and obtain a high crystal quality simultaneously.

Electrical characterization of anodic alumina substrate with via-in-pad structure

NASA Astrophysics Data System (ADS)

Kim, Moonjung

2013-10-01

An anodic alumina substrate has been developed as a package substrate for dynamic random access memory devices. Unlike the conventional package substrates commonly made by laminating an epoxy-based core and cladding with copper, this substrate is fabricated using aluminum anodization technology. The anodization process produces a thick aluminum oxide layer on the aluminum substrate to be used as a dielectric layer. Placing copper patterns on the anodic aluminum oxide layer forms a new substrate structure that consists of a layered structure of aluminum, anodic aluminum oxide, and copper. Using selective anodization in the fabrication process, a via structure connecting the top copper layer and bottom aluminum layer is demonstrated. Additionally, by putting vias directly in the bond and ball pads in the substrate design, the via-in-pad structure is applied in this work. These two-layer metal structures and via-in-pad arrangements make routing easier and thus provide more design flexibility. Additionally, this new package substrate has improved the power distribution network impedance given the characteristics of these structures.

Strained layer InP/InGaAs quantum well laser

NASA Technical Reports Server (NTRS)

Forouhar, Siamak (Inventor); Larsson, Anders G. (Inventor); Ksendzov, Alexander (Inventor); Lang, Robert J. (Inventor)

1993-01-01

Strained layer single or multiple quantum well lasers include an InP substrate, a pair of lattice-matched InGaAsP quarternary layers epitaxially grown on the substrate surrounding a pair of lattice matched In.sub.0.53 Ga.sub.0.47 As ternary layers surrounding one or more strained active layers of epitaxially grown, lattice-mismatched In.sub.0.75 Ga.sub.0.25 As. The level of strain is selected to control the bandgap energy to produce laser output having a wavelength in the range of 1.6 to 2.5 .mu.m. The multiple quantum well structure uses between each active layer. Diethyl zinc is used for p-type dopant in an InP cladding layer at a concentration level in the range of about 5.times.10.sup.17 /cm.sup.3 to about 2.times.10.sup.18 /cm.sup.3. Hydrogen sulfide is used for n-type dopant in the substrate.

Microstructure and high-temperature oxidation resistance of TiN/Ti3Al intermetallic matrix composite coatings on Ti6Al4V alloy surface by laser cladding

NASA Astrophysics Data System (ADS)

Zhang, Xiaowei; Liu, Hongxi; Wang, Chuanqi; Zeng, Weihua; Jiang, Yehua

2010-11-01

A high-temperature oxidation resistant TiN embedded in Ti3Al intermetallic matrix composite coating was fabricated on titanium alloy Ti6Al4V surface by 6kW transverse-flow CO2 laser apparatus. The composition, morphology and microstructure of the laser clad TiN/Ti3Al intermetallic matrix composite coating were characterized by optical microscopy (OM), scanning electron microscopy (SEM), X-ray diffraction (XRD) and energy dispersive spectrometer (EDS). In order to evaluate the high-temperature oxidation resistance of the composite coatings and the titanium alloy substrate, isothermal oxidation test was performed in a conventional high-temperature resistance furnace at 600°C and 800°C respectively. The result shows that the laser clad intermetallic composite coating has a rapidly solidified fine microstructure consisting of TiN primary phase (granular-like, flake-like, and dendrites), and uniformly distributed in the Ti3Al matrix. It indicates that a physical and chemical reaction between the Ti powder and AlN powder occurred completely under the laser irradiation. In addition, the microhardness of the TiN/Ti3Al intermetallic matrix composite coating is 844HV0.2, 3.4 times higher than that of the titanium alloy substrate. The high-temperature oxidation resistance test reveals that TiN/Ti3Al intermetallic matrix composite coating results in the better modification of high-temperature oxidation behavior than the titanium substrate. The excellent high-temperature oxidation resistance of the laser cladding layer is attributed to the formation of the reinforced phase TiN and Al2O3, TiO2 hybrid oxide. Therefore, the laser cladding TiN/Ti3Al intermetallic matrix composite coating is anticipated to be a promising oxidation resistance surface modification technique for Ti6Al4V alloy.

Fabrication of a tantalum-clad tungsten target for LANSCE

NASA Astrophysics Data System (ADS)

Nelson, A. T.; O'Toole, J. A.; Valicenti, R. A.; Maloy, S. A.

2012-12-01

Development of a solid state bonding technique suitable to clad tungsten targets with tantalum was completed to improve operation of the Los Alamos Neutron Science Centers spallation target. Significant deterioration of conventional bare tungsten targets has historically resulted in transfer of tungsten into the cooling system through corrosion resulting in increased radioactivity outside the target and reduction of delivered neutron flux. The fabrication method chosen to join the tantalum cladding to the tungsten was hot isostatic pressing (HIP) given the geometry constraints of a cylindrical assembly and previous success demonstrated at KENS. Nominal HIP parameters of 1500 °C, 200 MPa, and 3 h were selected based upon previous work. Development of the process included significant surface engineering controls and characterization given tantalums propensity for oxide and carbide formation at high temperatures. In addition to rigorous acid cleaning implemented at each step of the fabrication process, a three layer tantalum foil gettering system was devised such that any free oxygen and carbon impurities contained in the argon gas within the HIP vessel was mitigated to the extent possible before coming into contact with the tantalum cladding. The result of the numerous controls and refined techniques was negligible coarsening of the native Ta2O5 surface oxide, no measureable oxygen diffusion into the tantalum bulk, and no detectable carburization despite use of argon containing up to 5 ppm oxygen and up to 40 ppm total CO, CO2, or organic contaminants. Post bond characterization of the interface revealed continuous bonding with a few microns of species interdiffusion.