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Sample records for algan electron blocking

  1. Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer.

    PubMed

    Lin, Bing-Chen; Chen, Kuo-Ju; Wang, Chao-Hsun; Chiu, Ching-Hsueh; Lan, Yu-Pin; Lin, Chien-Chung; Lee, Po-Tsung; Shih, Min-Hsiung; Kuo, Yen-Kuang; Kuo, Hao-Chung

    2014-01-13

    A tapered AlGaN electron blocking layer with step-graded aluminum composition is analyzed in nitride-based blue light-emitting diode (LED) numerically and experimentally. The energy band diagrams, electrostatic fields, carrier concentration, electron current density profiles, and hole transmitting probability are investigated. The simulation results demonstrated that such tapered structure can effectively enhance the hole injection efficiency as well as the electron confinement. Consequently, the LED with a tapered EBL grown by metal-organic chemical vapor deposition exhibits reduced efficiency droop behavior of 29% as compared with 44% for original LED, which reflects the improvement in hole injection and electron overflow in our design.

  2. On the importance of AlGaN electron blocking layer design for GaN-based light-emitting diodes

    SciTech Connect

    Sheng Xia, Chang Simon Li, Z. M.; Sheng, Yang

    2013-12-02

    There has been confusion regarding the usefulness of AlGaN electron blocking layer (EBL) in GaN-based light-emitting diodes (LEDs) with some published experimental data indicating that the LEDs without EBL performed better than those with it. InGaN/GaN LEDs have been investigated numerically to analyze its actual effect in these devices. Simulation results show that hole blocking effect of EBL mainly determines the effectiveness of using it which is more sensitive to its Al composition, band offset ratio, and polarization charges. It is found that the choice of Al composition is critical for EBL to improve the optical performance of GaN-based LEDs.

  3. Dislocation blocking by AlGaN hot electron injecting layer in the epitaxial growth of GaN terahertz Gunn diode

    NASA Astrophysics Data System (ADS)

    Li, Liang; Yang, Lin'an; Zhang, Jincheng; Hao, Yue

    2013-09-01

    This paper reports an efficient method to improve the crystal quality of GaN Gunn diode with AlGaN hot electron injecting layer (HEI). An evident reduction of screw dislocation and edge dislocation densities is achieved by the strain management and the enhanced lateral growth in high temperature grown AlGaN HEI layer. Compared with the top hot electron injecting layer (THEI) structure, the bottom hot electron injecting layer (BHEI) structure enhances the crystal quality of transit region due to the growth sequence modulation of HEI layer. A high Hall mobility of 2934 cm2/Vs at 77 K, a nearly flat downtrend of Hall mobility at the temperature ranging from 300 to 573 K, a low intensity of ratio of yellow luminescence band to band edge emission, a narrow band edge emission line-width, and a smooth surface morphology are observed for the BHEI structural epitaxy of Gunn diode, which indicates that AlGaN BHEI structure is a promising candidate for fabrication of GaN Gunn diodes in terahertz regime.

  4. Performance enhancement of AlGaN deep-ultraviolet light-emitting diodes with varied superlattice barrier electron blocking layer

    NASA Astrophysics Data System (ADS)

    Liu, Songqing; Ye, Chunya; Cai, Xuefen; Li, Shuping; Lin, Wei; Kang, Junyong

    2016-05-01

    The AlGaN-based deep-UV LEDs with specific design of varied superlattice barrier electron blocking layer (EBL) has been investigated numerically by APSYS software. The proposed structure exhibits significant improvement in the light output power, internal quantum efficiency, current-voltage curve and electroluminescence intensity. After analyzing the profiles of energy band diagrams, carriers concentration and radiative recombination rate, we find the main advantages of proposed structure are ascribed to higher barrier suppressing electron leakage and reduced barrier for hole injection. Thus, compared with reference sample, the proposed EBL design may be a good method for improving the whole performance of UV LEDs.

  5. Trap states in AlGaN channel high-electron-mobility transistors

    SciTech Connect

    Zhao, ShengLei; Zhang, Kai; Ha, Wei; Chen, YongHe; Zhang, Peng; Zhang, JinCheng; Hao, Yue; Ma, XiaoHua

    2013-11-18

    Frequency dependent capacitance and conductance measurements were performed to analyze the trap states in the AlGaN channel high-electron-mobility transistors (HEMTs). The trap state density in the AlGaN channel HEMTs decreases from 1.26 × 10{sup 13} cm{sup −2}eV{sup −1} at the energy of 0.33 eV to 4.35 × 10{sup 11} cm{sup −2}eV{sup −1} at 0.40 eV. Compared with GaN channel HEMTs, the trap states in the AlGaN channel HEMTs have deeper energy levels. The trap with deeper energy levels in the AlGaN channel HEMTs is another reason for the reduction of the reverse gate leakage current besides the higher Schottky barrier height.

  6. Prostate specific antigen detection using AlGaN /GaN high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Kang, B. S.; Wang, H. T.; Lele, T. P.; Tseng, Y.; Ren, F.; Pearton, S. J.; Johnson, J. W.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.

    2007-09-01

    Antibody-functionalized Au-gated AlGaN /GaN high electron mobility transistors (HEMTs) were used to detect prostate specific antigen (PSA). The PSA antibody was anchored to the gate area through the formation of carboxylate succinimdyl ester bonds with immobilized thioglycolic acid. The AlGaN /GaN HEMT drain-source current showed a rapid response of less than 5s when target PSA in a buffer at clinical concentrations was added to the antibody-immobilized surface. The authors could detect a wide range of concentrations from 10pg/mlto1μg/ml. The lowest detectable concentration was two orders of magnitude lower than the cutoff value of PSA measurements for clinical detection of prostate cancer. These results clearly demonstrate the promise of portable electronic biological sensors based on AlGaN /GaN HEMTs for PSA screening.

  7. Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage

    SciTech Connect

    Bajaj, Sanyam Hung, Ting-Hsiang; Akyol, Fatih; Nath, Digbijoy; Rajan, Siddharth

    2014-12-29

    We report on the potential of high electron mobility transistors (HEMTs) consisting of high composition AlGaN channel and barrier layers for power switching applications. Detailed two-dimensional (2D) simulations show that threshold voltages in excess of 3 V can be achieved through the use of AlGaN channel layers. We also calculate the 2D electron gas mobility in AlGaN channel HEMTs and evaluate their power figures of merit as a function of device operating temperature and Al mole fraction in the channel. Our models show that power switching transistors with AlGaN channels would have comparable on-resistance to GaN-channel based transistors for the same operation voltage. The modeling in this paper shows the potential of high composition AlGaN as a channel material for future high threshold enhancement mode transistors.

  8. Electrical detection of kidney injury molecule-1 with AlGaN /GaN high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Wang, H. T.; Kang, B. S.; Ren, F.; Pearton, S. J.; Johnson, J. W.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.

    2007-11-01

    AlGaN /GaN high electron mobility transistors (HEMTs) were used to detect kidney injury molecule-1 (KIM-1), an important biomarker for early kidney injury detection. The gate region consisted of 5nm gold deposited onto the AlGaN surface. The gold was conjugated to highly specific KIM-1 antibodies through a self-assembled monolayer of thioglycolic acid. The HEMT source-drain current showed a clear dependence on the KIM-1 concentration in phosphate-buffered saline solution. The limit of detection was 1ng/ml using a 20×50μm2 gate sensing area. This approach shows potential for both preclinical and clinical kidney injury diagnosis with accurate, rapid, noninvasive, and high throughput capabilities.

  9. Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high-electron-mobility transistors

    NASA Astrophysics Data System (ADS)

    Takei, Yusuke; Tsutsui, Kazuo; Saito, Wataru; Kakushima, Kuniyuki; Wakabayashi, Hitoshi; Iwai, Hiroshi

    2016-04-01

    The dependence of ohmic contact resistance on the AlGaN layer thickness was evaluated for AlGaN/GaN high-electron-mobility transistor (HEMT) structures. Mo/Al/Ti contacts were formed on AlGaN layers with various thicknesses. The observed resistance characteristics are discussed on the basis of a model in which the overall contact resistance is composed of a series of three resistance components. Different dependences on the AlGaN layer thickness was observed after annealing at low temperatures (800-850 °C) and at high temperatures (900-950 °C). It was determined that lowering the resistance at the metal/AlGaN interface and that of the AlGaN layer is important for obtaining low-resistance ohmic contacts.

  10. Advantages of the AlGaN spacer in InAlN high-electron-mobility transistors grown using metalorganic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Yamada, Atsushi; Ishiguro, Tetsuro; Kotani, Junji; Tomabechi, Shuichi; Nakamura, Norikazu; Watanabe, Keiji

    2016-05-01

    We demonstrate the advantages of an AlGaN spacer layer in an InAlN high-electron-mobility transistor (HEMT). We investigated the effects of the growth parameters of the spacer layer on electron mobility in InAlN HEMTs grown by metalorganic vapor phase epitaxy, focusing on the surface roughness of the spacer layer and sharpness of the interface with the GaN channel layer. The electron mobility degraded, as evidenced by the formation of a graded AlGaN layer at the top of the GaN channel layer and the surface roughness of the AlN spacer layer. We believe that the short migration length of aluminum atoms is responsible for the observed degradation. An AlGaN spacer layer was employed to suppress the formation of the graded AlGaN layer and improve surface morphology. A high electron mobility of 1550 cm2 V-1 s-1 and a low sheet resistance of 211 Ω/sq were achieved for an InAlN HEMT with an AlGaN spacer layer.

  11. Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes

    SciTech Connect

    Lu, Yu-Hsuan; Pilkuhn, Manfred H.; Fu, Yi-Keng; Chu, Mu-Tao; Huang, Shyh-Jer E-mail: totaljer48@gmail.com; Su, Yan-Kuin E-mail: totaljer48@gmail.com; Wang, Kang L.

    2014-03-21

    The influence of the AlGaN electron blocking layer (EBL) with graded aluminum composition on electron confinement and hole injection in AlGaN-based ultraviolet light-emitting diodes (LEDs) are investigated. The light output power of LED with graded AlGaN EBL was markedly improved, comparing to LED with conventional EBL. In experimental results, a high increment of 86.7% can be obtained in light output power. Simulation analysis shows that via proper modification of the barrier profile from the last barrier of the active region to EBL, not only the elimination of electron overflow to p-type layer can be achieved but also the hole injection into the active region can be enhanced, compared to a conventional LED structure. The dominant factor to the performance improvement is shown to be the modulation of polarization field by the graded Al composition in EBL.

  12. Polarization Effects of GaN and AlGaN: Polarization Bound Charge, Band Bending, and Electronic Surface States

    NASA Astrophysics Data System (ADS)

    Eller, Brianna S.; Yang, Jialing; Nemanich, Robert J.

    2014-12-01

    GaN-based devices are currently limited by reliability issues such as gate leakage and current collapse, where the mechanisms responsible for degradation are closely related to the electronic surface state configuration. Therefore, understanding the electronic surface state configuration of GaN-based materials will help improve device performance. Since GaN has an inherent polarization, these materials are also subject to a bound polarization charge, which influences the electronic state configuration. In this study, the surface band bending of N-face GaN, Ga-face GaN, and Ga-face AlGaN was measured with x-ray photoemission spectroscopy after various cleaning steps to investigate the effects of the polarization. Despite the different surface bound charge on these materials, similar band bending was observed regardless of the magnitude or direction of the charge. Specifically, the band bending varied from -0.1 eV to 0.9 eV on these samples, which supported the models of a Fermi level pinning state at ˜0.4 eV to 0.8 eV below the conduction band. Based on available literature, we suggest this pinning state is indirectly evident of a nitrogen vacancy or gallium-dangling bond.

  13. New Al0.25Ga0.75N/GaN high electron mobility transistor with partial etched AlGaN layer

    NASA Astrophysics Data System (ADS)

    Yuan, Song; Duan, Baoxing; Yuan, Xiaoning; Cao, Zhen; Guo, Haijun; Yang, Yintang

    2016-05-01

    In this letter, a new Al0.25Ga0.75N/GaN high electron mobility transistor (HEMT) with the AlGaN layer is partial etched is reported for the first time. The two-dimensional electron gas (2DEG) density in the HEMTs is changed by partially etching the AlGaN layer. A new electric field peak is introduced along the interface between the AlGaN layer and the GaN buffer by the electric field modulation effect. The high electric field near the gate in the proposed Al0.25Ga0.75N/GaN HEMT is effectively decreased, which makes the surface electric field more uniform. Compared with the conventional structure, the breakdown voltage can be improved by 58% for the proposed Al0.25Ga0.75N/GaN HEMT and the current collapse can be reduced resulting from the more uniform surface electric field.

  14. Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers

    PubMed Central

    Nguyen, Hieu Pham Trung; Djavid, Mehrdad; Woo, Steffi Y.; Liu, Xianhe; Connie, Ashfiqua T.; Sadaf, Sharif; Wang, Qi; Botton, Gianluigi A.; Shih, Ishiang; Mi, Zetian

    2015-01-01

    We report on the demonstration of a new type of axial nanowire LED heterostructures, with the use of self-organized InGaN/AlGaN dot-in-a-wire core-shell nanowire arrays. The large bandgap AlGaN shell is spontaneously formed on the sidewall of the nanowire during the growth of AlGaN barrier of the quantum dot active region. As such, nonradiative surface recombination, that dominates the carrier dynamics of conventional axial nanowire LED structures, can be largely eliminated, leading to significantly increased carrier lifetime from ~0.3 ns to 4.5 ns. The luminescence emission is also enhanced by orders of magnitude. Moreover, the p-doped AlGaN barrier layers can function as distributed electron blocking layers (EBLs), which is found to be more effective in reducing electron overflow, compared to the conventional AlGaN EBL. The device displays strong white-light emission, with a color rendering index of ~95. An output power of >5 mW is measured for a 1 mm × 1 mm device, which is more than 500 times stronger than the conventional InGaN axial nanowire LEDs without AlGaN distributed EBLs. PMID:25592057

  15. High-performance AlGaN /GaN lateral field-effect rectifiers compatible with high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Chen, Wanjun; Wong, King-Yuen; Huang, Wei; Chen, Kevin J.

    2008-06-01

    A high electron mobility transistor (HEMT)-compatible power lateral field-effect rectifier (L-FER) with low turn-on voltage is demonstrated using the same fabrication process as that for normally off AlGaN /GaN HEMT, providing a low-cost solution for GaN power integrated circuits. The power rectifier features a Schottky-gate-controlled two-dimensional electron gas channel between the cathode and anode. By tying up the Schottky gate and anode together, the forward turn-on voltage of the rectifier is determined by the threshold voltage of the channel instead of the Schottky barrier. The L-FER with a drift length of 10μm features a forward turn-on voltage of 0.63V at a current density of 100A/cm2. This device also exhibits a reverse breakdown voltage (BV) of 390V at a current level of 1mA/mm and a specific on resistance (RON,sp) of 1.4mΩcm2, yielding a figure of merit (BV2/RON,sp) of 108MW/cm2. The excellent device performance, coupled with the lateral device structure and process compatibility with AlGaN /GaN HEMT, make the proposed L-FER a promising candidate for GaN power integrated circuits.

  16. Improving hole injection and carrier distribution in InGaN light-emitting diodes by removing the electron blocking layer and including a unique last quantum barrier

    SciTech Connect

    Cheng, Liwen Chen, Haitao; Wu, Shudong

    2015-08-28

    The effects of removing the AlGaN electron blocking layer (EBL), and using a last quantum barrier (LQB) with a unique design in conventional blue InGaN light-emitting diodes (LEDs), were investigated through simulations. Compared with the conventional LED design that contained a GaN LQB and an AlGaN EBL, the LED that contained an AlGaN LQB with a graded-composition and no EBL exhibited enhanced optical performance and less efficiency droop. This effect was caused by an enhanced electron confinement and hole injection efficiency. Furthermore, when the AlGaN LQB was replaced with a triangular graded-composition, the performance improved further and the efficiency droop was lowered. The simulation results indicated that the enhanced hole injection efficiency and uniform distribution of carriers observed in the quantum wells were caused by the smoothing and thinning of the potential barrier for the holes. This allowed a greater number of holes to tunnel into the quantum wells from the p-type regions in the proposed LED structure.

  17. Improving hole injection and carrier distribution in InGaN light-emitting diodes by removing the electron blocking layer and including a unique last quantum barrier

    NASA Astrophysics Data System (ADS)

    Cheng, Liwen; Chen, Haitao; Wu, Shudong

    2015-08-01

    The effects of removing the AlGaN electron blocking layer (EBL), and using a last quantum barrier (LQB) with a unique design in conventional blue InGaN light-emitting diodes (LEDs), were investigated through simulations. Compared with the conventional LED design that contained a GaN LQB and an AlGaN EBL, the LED that contained an AlGaN LQB with a graded-composition and no EBL exhibited enhanced optical performance and less efficiency droop. This effect was caused by an enhanced electron confinement and hole injection efficiency. Furthermore, when the AlGaN LQB was replaced with a triangular graded-composition, the performance improved further and the efficiency droop was lowered. The simulation results indicated that the enhanced hole injection efficiency and uniform distribution of carriers observed in the quantum wells were caused by the smoothing and thinning of the potential barrier for the holes. This allowed a greater number of holes to tunnel into the quantum wells from the p-type regions in the proposed LED structure.

  18. Enhancing the performance of blue GaN-based light emitting diodes with double electron blocking layers

    NASA Astrophysics Data System (ADS)

    Guo, Yao; Liang, Meng; Fu, Jiajia; Liu, Zhiqiang; Yi, Xiaoyan; Wang, Junxi; Wang, Guohong; Li, Jinmin

    2015-03-01

    In this work, novel double Electron Blocking Layers for InGaN/GaN multiple quantum wells light-emitting diodes were proposed to mitigate the efficiency droop at high current density. The band diagram and carriers distributions were investigated numerically. The results indicate that due to a newly formed holes stack in the p-GaN near the active region, the hole injection has been improved and an uniform carriers distribution can be achieved. As a result, in our new structure with double Electron Blocking Layers, the efficiency droop has been reduced to 15.5 % in comparison with 57.3 % for the LED with AlGaN EBL at the current density of 100 A/cm2.

  19. Enhancing the performance of blue GaN-based light emitting diodes with double electron blocking layers

    SciTech Connect

    Guo, Yao; Liang, Meng; Fu, Jiajia; Liu, Zhiqiang E-mail: lzq@semi.ac.cn; Yi, Xiaoyan E-mail: lzq@semi.ac.cn; Wang, Junxi; Wang, Guohong; Li, Jinmin

    2015-03-15

    In this work, novel double Electron Blocking Layers for InGaN/GaN multiple quantum wells light-emitting diodes were proposed to mitigate the efficiency droop at high current density. The band diagram and carriers distributions were investigated numerically. The results indicate that due to a newly formed holes stack in the p-GaN near the active region, the hole injection has been improved and an uniform carriers distribution can be achieved. As a result, in our new structure with double Electron Blocking Layers, the efficiency droop has been reduced to 15.5 % in comparison with 57.3 % for the LED with AlGaN EBL at the current density of 100 A/cm{sup 2}.

  20. Thermo-piezo-electro-mechanical simulation of AlGaN (aluminum gallium nitride) / GaN (gallium nitride) High Electron Mobility Transistors

    NASA Astrophysics Data System (ADS)

    Stevens, Lorin E.

    Due to the current public demand of faster, more powerful, and more reliable electronic devices, research is prolific these days in the area of high electron mobility transistor (HEMT) devices. This is because of their usefulness in RF (radio frequency) and microwave power amplifier applications including microwave vacuum tubes, cellular and personal communications services, and widespread broadband access. Although electrical transistor research has been ongoing since its inception in 1947, the transistor itself continues to evolve and improve much in part because of the many driven researchers and scientists throughout the world who are pushing the limits of what modern electronic devices can do. The purpose of the research outlined in this paper was to better understand the mechanical stresses and strains that are present in a hybrid AlGaN (Aluminum Gallium Nitride) / GaN (Gallium Nitride) HEMT, while under electrically-active conditions. One of the main issues currently being researched in these devices is their reliability, or their consistent ability to function properly, when subjected to high-power conditions. The researchers of this mechanical study have performed a static (i.e. frequency-independent) reliability analysis using powerful multiphysics computer modeling/simulation to get a better idea of what can cause failure in these devices. Because HEMT transistors are so small (micro/nano-sized), obtaining experimental measurements of stresses and strains during the active operation of these devices is extremely challenging. Physical mechanisms that cause stress/strain in these structures include thermo-structural phenomena due to mismatch in both coefficient of thermal expansion (CTE) and mechanical stiffness between different materials, as well as stress/strain caused by "piezoelectric" effects (i.e. mechanical deformation caused by an electric field, and conversely voltage induced by mechanical stress) in the AlGaN and GaN device portions (both

  1. Block copolymers for opto-electronics

    NASA Astrophysics Data System (ADS)

    Sun, Sam-Shajing; Fan, Zhen; Wang, Yiqing; Taft, Charles; Haliburton, James H.; Maaref, Shahin; Ledbetter, Abram J.; Bonner, Carl E.

    2004-05-01

    A D(donor)-B(bridge)-A(acceptor)-B(bridge)-type block copolymer system has been developed and preliminarily examined for potential opto-electronic photovoltaic functions. The unique feature of the device includes a primary DBAB-type block copolymer backbone, where D and A are conjugated donor and acceptor polymer blocks, and B is a non-conjugated and flexible chain, a π orbital stacked and conjugated chain self-assembled and ordered "secondary structure", and a donor/acceptor asymmetric layers sandwiched D/A columnar "tertiary structure". This structure is expected to improve photovoltaic power conversion efficiency significantly in comparison to most existing organic or polymeric donor/acceptor binary photovoltaic systems due to the reduction of "exciton loss", the "carrier loss", as well as the "photon loss" via three-dimensional space and energy level optimizations. Preliminary experimental results revealed better morphology and opto-electronic properties of DBAB vs. D/A blends.

  2. Enhanced carrier injection in InGaN/GaN multiple quantum wells LED with polarization-induced electron blocking barrier

    NASA Astrophysics Data System (ADS)

    Li, Chengguo; Liu, Hongfei; Chua, Soo Jin

    2016-03-01

    In this report, we designed a light emitting diode (LED) structure in which an N-polar p-GaN layer is grown on top of Ga-polar In0.1Ga0.9N/GaN quantum wells (QWs) on an n-GaN layer. Numerical simulation reveals that the large polarization field at the polarity inversion interface induces a potential barrier in the conduction band, which can block electron overflow out of the QWs. Compared with a conventional LED structure with an Al0.2Ga0.8N electron blocking layer (EBL), the proposed LED structure shows much lower electron current leakage, higher hole injection, and a significant improvement in the internal quantum efficiency (IQE). These results suggest that the polarization induced barrier (PIB) is more effective than the AlGaN EBL in suppressing electron overflow and improving hole transport in GaN-based LEDs.

  3. Building blocks for electronic spiking neural networks.

    PubMed

    van Schaik, A

    2001-01-01

    We present an electronic circuit modelling the spike generation process in the biological neuron. This simple circuit is capable of simulating the spiking behaviour of several different types of biological neurons. At the same time, the circuit is small so that many neurons can be implemented on a single silicon chip. This is important, as neural computation obtains its power not from a single neuron, but from the interaction between a large number of neurons. Circuits that model these interactions are also presented in this paper. They include the circuits for excitatory, inhibitory and shunting inhibitory synapses, a circuit which models the regeneration of spikes on the axon, and a circuit which models the reduction of input strength with the distance of the synapse to the cell body on the dendrite of the cell. Together these building blocks allow the implementation of electronic spiking neural networks.

  4. Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes

    SciTech Connect

    Mehnke, Frank Kuhn, Christian; Guttmann, Martin; Reich, Christoph; Kolbe, Tim; Rass, Jens; Wernicke, Tim; Kueller, Viola; Knauer, Arne; Lapeyrade, Mickael; Einfeldt, Sven; Weyers, Markus; Kneissl, Michael

    2014-08-04

    The design and Mg-doping profile of AlN/Al{sub 0.7}Ga{sub 0.3}N electron blocking heterostructures (EBH) for AlGaN multiple quantum well (MQW) light emitting diodes (LEDs) emitting below 250 nm was investigated. By inserting an AlN electron blocking layer (EBL) into the EBH, we were able to increase the quantum well emission power and significantly reduce long wavelength parasitic luminescence. Furthermore, electron leakage was suppressed by optimizing the thickness of the AlN EBL while still maintaining sufficient hole injection. Ultraviolet (UV)-C LEDs with very low parasitic luminescence (7% of total emission power) and external quantum efficiencies of 0.19% at 246 nm have been realized. This concept was applied to AlGaN MQW LEDs emitting between 235 nm and 263 nm with external quantum efficiencies ranging from 0.002% to 0.93%. After processing, we were able to demonstrate an UV-C LED emitting at 234 nm with 14.5 μW integrated optical output power and an external quantum efficiency of 0.012% at 18.2 A/cm{sup 2}.

  5. Organic photovoltaic cell incorporating electron conducting exciton blocking layers

    DOEpatents

    Forrest, Stephen R.; Lassiter, Brian E.

    2014-08-26

    The present disclosure relates to photosensitive optoelectronic devices including a compound blocking layer located between an acceptor material and a cathode, the compound blocking layer including: at least one electron conducting material, and at least one wide-gap electron conducting exciton blocking layer. For example, 3,4,9,10 perylenetetracarboxylic bisbenzimidazole (PTCBI) and 1,4,5,8-napthalene-tetracarboxylic-dianhydride (NTCDA) function as electron conducting and exciton blocking layers when interposed between the acceptor layer and cathode. Both materials serve as efficient electron conductors, leading to a fill factor as high as 0.70. By using an NTCDA/PTCBI compound blocking layer structure increased power conversion efficiency is achieved, compared to an analogous device using a conventional blocking layers shown to conduct electrons via damage-induced midgap states.

  6. GaInN light-emitting diodes using separate epitaxial growth for the p-type region to attain polarization-inverted electron-blocking layer, reduced electron leakage, and improved hole injection

    SciTech Connect

    Meyaard, David S. Lin, Guan-Bo; Ma, Ming; Fred Schubert, E.; Cho, Jaehee; Han, Sang-Heon; Kim, Min-Ho; Shim, HyunWook; Sun Kim, Young

    2013-11-11

    A GaInN light-emitting diode (LED) structure is analyzed that employs a separate epitaxial growth for the p-type region, i.e., the AlGaN electron-blocking layer (EBL) and p-type GaN cladding layer, followed by wafer or chip bonding. Such LED structure has a polarization-inverted EBL and allows for uncompromised epitaxial-growth optimization of the p-type region, i.e., without the need to consider degradation of the quantum-well active region during p-type region growth. Simulations show that such an LED structure reduces electron leakage, reduces the efficiency droop, improves hole injection, and has the potential to extend high efficiencies into the green spectral region.

  7. Raman spectroscopy of GaN and AlGaN nanowires: from ensemble to single nanowire study

    NASA Astrophysics Data System (ADS)

    Wang, J.; Bayon, C.; Demangeot, F.; Pechou, R.; Mlayah, A.; Cros, A.; Daudin, B.

    2013-03-01

    Self-assembled GaN nanowires (NWs) currently are a subject of sustained interest in the scientific community motivated by both their potential applications for new LEDs, which should take benefit of the improved crystalline quality of those nano-objects, due to a strongly reduced defects density. In addition, interest of the scientific community for these 1D nano-systems is also related to the new fundamental questions opened by their strongly anisotropic geometry, and to their potential as possible building blocks for future nano-electronic devices. In this context, Raman spectroscopy has been increasingly used to study nitride NWs and several new phenomena have been reported to date with respect to these one-dimensional structures. In this work, both GaN and AlGaN nanowires grown by plasma-assisted Molecular Beam Epitaxy (MBE) have been experimentally investigated by scanning electron microscopy, atomic force microscopy and micro-Raman spectroscopy. Experimental results are analyzed and compared to theoretical ones obtained by dielectric models and Discrete Dipole Approximation (DDA) method. Evidence is given for original surface effects in the optical phonon physics related to both structural anisotropy of the material and 1D geometry of the GaN NWs. By using UV resonant excitation for AlGaN NWs in the whole range of composition, we demonstrate the selective excitation of AlGaN with the Al composition matching the energy of the exciting photons. Finally, we analyzed Raman data from single GaN NW after deposition on a flat substrate and we discuss the nature of strongly polarized A1(TO) phonon as a function of the NWs aspect ratio.

  8. Naphthodithiophenes: emerging building blocks for organic electronics.

    PubMed

    Takimiya, Kazuo; Osaka, Itaru

    2015-02-01

    Linear-fused naphthodithiophenes (NDTs) are emerging building blocks in the development of new semiconducting small molecules, oligomers, and polymers. The promising nature of NDT-based materials as organic semiconductors has been demonstrated by superior device characteristics in organic field-effect transistors (OFETs) and organic photovoltaics (OPVs) in the last few years. In particular, it is quite impressive that a power conversion efficiency as high as 8.2% has been achieved for a single-junction OPV cell consisting of NDT-based semiconducting polymers and a fullerene derivative in such a short period of time. Here, we provide an overview of recent synthetic evolutions in NDT chemistry and progress in NDT-based materials, especially conjugated oligomers and polymers and their applications to OFETs and OPVs.

  9. Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks

    NASA Astrophysics Data System (ADS)

    Cui, Yi; Lieber, Charles M.

    2001-02-01

    Because semiconductor nanowires can transport electrons and holes, they could function as building blocks for nanoscale electronics assembled without the need for complex and costly fabrication facilities. Boron- and phosphorous-doped silicon nanowires were used as building blocks to assemble three types of semiconductor nanodevices. Passive diode structures consisting of crossed p- and n-type nanowires exhibit rectifying transport similar to planar p-n junctions. Active bipolar transistors, consisting of heavily and lightly n-doped nanowires crossing a common p-type wire base, exhibit common base and emitter current gains as large as 0.94 and 16, respectively. In addition, p- and n-type nanowires have been used to assemble complementary inverter-like structures. The facile assembly of key electronic device elements from well-defined nanoscale building blocks may represent a step toward a ``bottom-up'' paradigm for electronics manufacturing.

  10. Functional nanoscale electronic devices assembled using silicon nanowire building blocks.

    PubMed

    Cui, Y; Lieber, C M

    2001-02-01

    Because semiconductor nanowires can transport electrons and holes, they could function as building blocks for nanoscale electronics assembled without the need for complex and costly fabrication facilities. Boron- and phosphorous-doped silicon nanowires were used as building blocks to assemble three types of semiconductor nanodevices. Passive diode structures consisting of crossed p- and n-type nanowires exhibit rectifying transport similar to planar p-n junctions. Active bipolar transistors, consisting of heavily and lightly n-doped nanowires crossing a common p-type wire base, exhibit common base and emitter current gains as large as 0.94 and 16, respectively. In addition, p- and n-type nanowires have been used to assemble complementary inverter-like structures. The facile assembly of key electronic device elements from well-defined nanoscale building blocks may represent a step toward a "bottom-up" paradigm for electronics manufacturing.

  11. Organic photovoltaics incorporating electron conducting exciton blocking layers

    NASA Astrophysics Data System (ADS)

    Lassiter, Brian E.; Wei, Guodan; Wang, Siyi; Zimmerman, Jeramy D.; Diev, Viacheslav V.; Thompson, Mark E.; Forrest, Stephen R.

    2011-06-01

    We demonstrate that 3,4,9,10 perylenetetracarboxylic bisbenzimidazole (PTCBI) and 1,4,5,8-napthalene-tetracarboxylic-dianhydride (NTCDA) can function as electron conducting and exciton blocking layers when interposed between the acceptor layer and cathode. A low-resistance contact is provided by PTCBI, while NTCDA acts as an exciton blocking layer and optical spacer. Both materials serve as efficient electron conductors, leading to a fill factor as high as 0.70. By using an NTCDA/PTCBI compound blocking layer structure in a functionalized-squaraine/C60-based device, we obtain a spectrally corrected power conversion efficiency of 5.1±0.1% under 1 sun, AM 1.5G simulated solar illumination, an improvement of >25% compared to an analogous device using a conventional bathocuproine layer that has previously been shown to conduct electrons via damage-induced midgap states.

  12. Electrical properties of n-type AlGaN with high Si concentration

    NASA Astrophysics Data System (ADS)

    Takeda, Kunihiro; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu

    2016-05-01

    The electrical properties of Si-doped AlGaN layers (AlN molar fractions: 0.03-0.06) with the donor concentrations (N D) from 8.8 × 1017 to 4.5 × 1020 cm-3 were investigated by variable-temperature Hall effect measurement using the van der Pauw method. A minimum resistivity of 3.6 × 10-4 Ω cm was obtained for Si-doped AlGaN with a smooth surface at room temperature. We found that the activation energy of the Si donor is affected by the Coulomb interaction in the AlGaN layer with N D values from 8.8 × 1017 to 2.5 × 1020 cm-3. In several AlGaN layers, the free-electron concentration did not vary with sample temperature, as expected in the case of degeneracy. The localization of GaN in the AlGaN layer was speculated as a cause of degeneracy of samples.

  13. Thin-film resistors used in functional electronic blocks

    NASA Technical Reports Server (NTRS)

    1965-01-01

    Vapor-deposited thin-film resistors replace diffused resistors in R-C tank circuits in a solid state electronic block. This allows an optimum parallel capacitance to be obtained for circuit applications requiring a high resistance and a low capacitance.

  14. Hydration effects on the electronic properties of eumelanin building blocks

    NASA Astrophysics Data System (ADS)

    Assis Oliveira, Leonardo Bruno; L. Fonseca, Tertius; Costa Cabral, Benedito J.; Coutinho, Kaline; Canuto, Sylvio

    2016-08-01

    Theoretical results for the electronic properties of eumelanin building blocks in the gas phase and water are presented. The building blocks presently investigated include the monomeric species DHI (5,6-dihydroxyindole) or hydroquinone (HQ), DHICA (5,6-dihydroxyindole-2-carboxylic acid), indolequinone (IQ), quinone methide (MQ), two covalently bonded dimers [HM ≡ HQ + MQ and IM ≡ IQ + MQ], and two tetramers [HMIM ≡ HQ + IM, IMIM ≡ IM + IM]. The electronic properties in water were determined by carrying out sequential Monte Carlo/time dependent density functional theory calculations. The results illustrate the role played by hydrogen bonding and electrostatic interactions in the electronic properties of eumelanin building blocks in a polar environment. In water, the dipole moments of monomeric species are significantly increased ([54-79]%) relative to their gas phase values. Recently, it has been proposed that the observed enhancement of the higher-energy absorption intensity in eumelanin can be explained by excitonic coupling among eumelanin protomolecules [C.-T. Chen et al., Nat. Commun. 5, 3859 (2014)]. Here, we are providing evidence that for DHICA, IQ, and HMIM, the electronic absorption toward the higher-energy end of the spectrum ([180-220] nm) is enhanced by long-range Coulombic interactions with the water environment. It was verified that by superposing the absorption spectra of different eumelanin building blocks corresponding to the monomers, dimers, and tetramers in liquid water, the behaviour of the experimental spectrum, which is characterised by a nearly monotonic decay from the ultraviolet to the infrared, is qualitatively reproduced. This result is in keeping with a "chemical disorder model," where the broadband absorption of eumelanin pigments is determined by the superposition of the spectra associated with the monomeric and oligomeric building blocks.

  15. Hydration effects on the electronic properties of eumelanin building blocks.

    PubMed

    Assis Oliveira, Leonardo Bruno; L Fonseca, Tertius; Costa Cabral, Benedito J; Coutinho, Kaline; Canuto, Sylvio

    2016-08-28

    Theoretical results for the electronic properties of eumelanin building blocks in the gas phase and water are presented. The building blocks presently investigated include the monomeric species DHI (5,6-dihydroxyindole) or hydroquinone (HQ), DHICA (5,6-dihydroxyindole-2-carboxylic acid), indolequinone (IQ), quinone methide (MQ), two covalently bonded dimers [HM ≡ HQ + MQ and IM ≡ IQ + MQ], and two tetramers [HMIM ≡ HQ + IM, IMIM ≡ IM + IM]. The electronic properties in water were determined by carrying out sequential Monte Carlo/time dependent density functional theory calculations. The results illustrate the role played by hydrogen bonding and electrostatic interactions in the electronic properties of eumelanin building blocks in a polar environment. In water, the dipole moments of monomeric species are significantly increased ([54-79]%) relative to their gas phase values. Recently, it has been proposed that the observed enhancement of the higher-energy absorption intensity in eumelanin can be explained by excitonic coupling among eumelanin protomolecules [C.-T. Chen et al., Nat. Commun. 5, 3859 (2014)]. Here, we are providing evidence that for DHICA, IQ, and HMIM, the electronic absorption toward the higher-energy end of the spectrum ([180-220] nm) is enhanced by long-range Coulombic interactions with the water environment. It was verified that by superposing the absorption spectra of different eumelanin building blocks corresponding to the monomers, dimers, and tetramers in liquid water, the behaviour of the experimental spectrum, which is characterised by a nearly monotonic decay from the ultraviolet to the infrared, is qualitatively reproduced. This result is in keeping with a "chemical disorder model," where the broadband absorption of eumelanin pigments is determined by the superposition of the spectra associated with the monomeric and oligomeric building blocks. PMID:27586929

  16. A normally-off fully AlGaN HEMT with high breakdown voltage and figure of merit for power switch applications

    NASA Astrophysics Data System (ADS)

    Ebrahimi, Behzad; Asad, Mohsen

    2015-07-01

    In this paper, we propose a fully AlGaN high electron mobility (HEMT) in which the gate electrode, the barrier and the channel are all AlGaN. The p-type AlGaN gate facilitates the normally-off operation to be compatible with the state-of-the-art power amplifiers. In addition, the AlGaN channel increases the breakdown voltage (VBR) to 598 V due to the higher breakdown field of AlGaN compared to GaN. To assess the efficiency of the proposed structure, its characteristics are compared with the conventional and recently proposed structures. The two-dimensional device simulation results show that the proposed structure has the highest threshold voltage (Vth) and the VBR with the moderately low ON-resistance (RON). These features lead to the highest figure of merit (2.49 × 1012) among the structures which is 83%, 59%, 47% and 49% more than those of the conventional, with a field plate, AlGaN gate and AlGaN channel structures, respectively.

  17. Characterization of AlGaN epitaxial layer

    NASA Astrophysics Data System (ADS)

    Parasuraman, Usha; Srinivasan, Sridhar; Ponce, Fernando; Rong, Liu; Abigail, Bell; Mei, Justin; Tanaka, S.

    2003-10-01

    Accurate aluminum compositions have been determined for AlxGa1-xN alloys whose rough compositions vary between 0AlGaN layer. TEM pictures showed the absence of misfit dislocations in the basal plane which indicated that the AlGaN layer was indeed under pseudomorphic growth. This study allows us to conclude that RBS is not a suitable technique for estimating the composition in the case of light elements such as Al. Cathodoluminescence was done to determine the band gap and the bowing parameter was calculated for the composition range 0electron density as a function of composition is reported.

  18. Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al{sub 2}O{sub 3} in AlGaN/GaN high electron mobility transistors with normally off capability

    SciTech Connect

    Capriotti, M. Alexewicz, A.; Fleury, C.; Gavagnin, M.; Bethge, O.; Wanzenböck, H. D.; Bertagnolli, E.; Pogany, D.; Strasser, G.; Visalli, D.; Derluyn, J.

    2014-03-17

    Using a generalized extraction method, the fixed charge density N{sub int} at the interface between in situ deposited SiN and 5 nm thick AlGaN barrier is evaluated by measurements of threshold voltage V{sub th} of an AlGaN/GaN metal insulator semiconductor high electron mobility transistor as a function of SiN thickness. The thickness of the originally deposited 50 nm thick SiN layer is reduced by dry etching. The extracted N{sub int} is in the order of the AlGaN polarization charge density. The total removal of the in situ SiN cap leads to a complete depletion of the channel region resulting in V{sub th} = +1 V. Fabrication of a gate stack with Al{sub 2}O{sub 3} as a second cap layer, deposited on top of the in situ SiN, is not introducing additional fixed charges at the SiN/Al{sub 2}O{sub 3} interface.

  19. Radiation Hard AlGaN Detectors and Imager

    SciTech Connect

    2012-05-01

    Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

  20. Designing Technology for Children: Moving from the Computer into the Physical World with Electronic Blocks

    ERIC Educational Resources Information Center

    Wyeth, Peta; Purchase, Helen

    2002-01-01

    Electronic Blocks are a new programming environment designed specifically for children between three and eight years of age. As such, the design of the Electronic Block environment is firmly based on principles of developmentally appropriate practices in early childhood education. Electronic Blocks are the physical embodiment of computer…

  1. Power electronic building block (PEDD) workshop. Trip report

    SciTech Connect

    Johnson, G.W.

    1995-10-09

    I attended the Power Electronic Building Block (PEBB) workshop at DOE HQ on June 21,1995. Accompanying me was Doug Hopkins, who is contracting with the Lab through Mark Newton on power electronics. The PEBB concept, and the workshop in particular, are sponsored by the Office of Naval Research (ONR) and DOE. The general concept behind PEBB is a ``second electronics revolution`` facilitated by a single-package, smart, multi-function power control block. The PEBB will potentially replace all conventional power electronic elements at scales from watts to megawatts, thus shifting power engineering from circuit design to system design. ONR is interested because power distribution aboard ships is expensive, complex, and bulky, and getting worse. The same applies to aircraft and many other military systems. DOE`s interest is in electric vehicles, utility power systems, and various end-use applications such as adjustable speed drives. There was obvious enthusiasm from industry, academia, and Government at this workshop. The PEBB concept is in its infancy. Exactly what a PEBB will encompass is still up for discussion. What is certain is that everything is up to industry: standards, innovations, marketing strategies, etc. ONR and DOE are only acting as facilitators and coordinators, and perhaps offering a little seed money. The program will be long-term but fast-paced, relying on concurrent engineering in a serious way. Great strides are required in semiconductors, packaging, controls, and system design. ONR want to put a big knee in the historic power density and dollar-per-watt curves, starting right now.

  2. From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: Role of the AlGaN layer microstructure

    SciTech Connect

    Fisichella, G.; Greco, G.; Roccaforte, F.; Giannazzo, F.

    2014-08-11

    The electrical behaviour of graphene (Gr) contacts to Al{sub x}Ga{sub 1−x}N/GaN heterostructures has been investigated, focusing, in particular, on the impact of the AlGaN microstructure on the current transport at Gr/AlGaN interface. Two Al{sub 0.25}Ga{sub 0.75}N/GaN heterostructures with very different quality in terms of surface roughness and defectivity, as evaluated by atomic force microscopy (AFM) and transmission electron microscopy, were compared in this study, i.e., a uniform and defect-free sample and a sample with a high density of typical V-defects, which locally cause a reduction of the AlGaN thickness. Nanoscale resolution current voltage (I-V) measurements by an Au coated conductive AFM tip were carried out at several positions both on the bare and Gr-coated AlGaN surfaces. Rectifying contacts were found onto both bare AlGaN surfaces, but with a more inhomogeneous and lower Schottky barrier height (Φ{sub B} ≈ 0.6 eV) for AlGaN with V-defects, with respect to the case of the uniform AlGaN (Φ{sub B} ≈ 0.9 eV). Instead, very different electrical behaviours were observed in the presence of the Gr interlayer between the Au tip and AlGaN, i.e., a Schottky contact with reduced barrier height (Φ{sub B} ≈ 0.4 eV) for the uniform AlGaN and an Ohmic contact for the AlGaN with V-defects. Interestingly, excellent lateral uniformity of the local I-V characteristics was found in both cases and can be ascribed to an averaging effect of the Gr electrode over the AlGaN interfacial inhomogeneities. Due to the locally reduced AlGaN layer thickness, V defect act as preferential current paths from Gr to the 2DEG and can account for the peculiar Ohmic behaviour of Gr contacts on defective AlGaN.

  3. Design and Synthesis of Novel Block Copolymers for Efficient Opto-Electronic Applications

    NASA Technical Reports Server (NTRS)

    Sun, Sam-Shajing; Fan, Zhen; Wang, Yiqing; Taft, Charles; Haliburton, James; Maaref, Shahin

    2002-01-01

    It has been predicted that nano-phase separated block copolymer systems containing electron rich donor blocks and electron deficient acceptor blocks may facilitate the charge carrier separation and migration in organic photovoltaic devices due to improved morphology in comparison to polymer blend system. This paper presents preliminary data describing the design and synthesis of a novel Donor-Bridge-Acceptor (D-B-A) block copolymer system for potential high efficient organic optoelectronic applications. Specifically, the donor block contains an electron donating alkyloxy derivatized polyphenylenevinylene (PPV), the acceptor block contains an electron withdrawing alkyl-sulfone derivatized polyphenylenevinylene (PPV), and the bridge block contains an electronically neutral non-conjugated aliphatic hydrocarbon chain. The key synthetic strategy includes the synthesis of each individual block first, then couple the blocks together. While the donor block stabilizes and facilitates the transport of the holes, the acceptor block stabilizes and facilitates the transport of the electrons, the bridge block is designed to hinder the probability of electron-hole recombination. Thus, improved charge separation and stability are expected with this system. In addition, charge migration toward electrodes may also be facilitated due to the potential nano-phase separated and highly ordered block copolymer ultra-structure.

  4. Growth, structural and optical properties of AlGaN nanowires in the whole composition range.

    PubMed

    Pierret, A; Bougerol, C; Murcia-Mascaros, S; Cros, A; Renevier, H; Gayral, B; Daudin, B

    2013-03-22

    We report on the growth of AlxGa1-xN nanowires by plasma-assisted molecular beam epitaxy for x in the 0.3-0.8 range. Based on a combination of macro- and micro-photoluminescence, Raman spectroscopy, x-ray diffraction and scanning electron microscopy experiments, it is shown that the structural and optical properties of AlGaN NWs are governed by the presence of compositional fluctuations associated with strongly localized electronic states. A growth model is proposed, which suggests that, depending on growth temperature and metal adatom density, macroscopic composition fluctuations are mostly of kinetic origin and are directly related to the nucleation of the AlGaN nanowire section on top of the GaN nanowire base which is used as a substrate.

  5. Growth, structural and optical properties of AlGaN nanowires in the whole composition range

    NASA Astrophysics Data System (ADS)

    Pierret, A.; Bougerol, C.; Murcia-Mascaros, S.; Cros, A.; Renevier, H.; Gayral, B.; Daudin, B.

    2013-03-01

    We report on the growth of AlxGa1-xN nanowires by plasma-assisted molecular beam epitaxy for x in the 0.3-0.8 range. Based on a combination of macro- and micro-photoluminescence, Raman spectroscopy, x-ray diffraction and scanning electron microscopy experiments, it is shown that the structural and optical properties of AlGaN NWs are governed by the presence of compositional fluctuations associated with strongly localized electronic states. A growth model is proposed, which suggests that, depending on growth temperature and metal adatom density, macroscopic composition fluctuations are mostly of kinetic origin and are directly related to the nucleation of the AlGaN nanowire section on top of the GaN nanowire base which is used as a substrate.

  6. Influence of substrate miscut angle on surface morphology and luminescence properties of AlGaN

    SciTech Connect

    Kusch, Gunnar Edwards, Paul R.; Bruckbauer, Jochen; Martin, Robert W.; Li, Haoning; Parbrook, Peter J.; Sadler, Thomas C.

    2014-03-03

    The influence of substrate miscut on Al{sub 0.5}Ga{sub 0.5} N layers was investigated using cathodoluminescence (CL) hyperspectral imaging and secondary electron imaging in an environmental scanning electron microscope. The samples were also characterized using atomic force microscopy and high resolution X-ray diffraction. It was found that small changes in substrate miscut have a strong influence on the morphology and luminescence properties of the AlGaN layers. Two different types are resolved. For low miscut angle, a crack-free morphology consisting of randomly sized domains is observed, between which there are notable shifts in the AlGaN near band edge emission energy. For high miscut angle, a morphology with step bunches and compositional inhomogeneities along the step bunches, evidenced by an additional CL peak along the step bunches, are observed.

  7. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect

    Kuppulingam, B. Singh, Shubra Baskar, K.

    2014-04-24

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  8. The role of surface kinetics on composition and quality of AlGaN

    NASA Astrophysics Data System (ADS)

    Bryan, Isaac; Bryan, Zachary; Mita, Seiji; Rice, Anthony; Hussey, Lindsay; Shelton, Christopher; Tweedie, James; Maria, Jon-Paul; Collazo, Ramón; Sitar, Zlatko

    2016-10-01

    Metal-polar, Al-rich AlGaN films were grown on both single crystalline AlN and sapphire substrates. The role of surface morphology and surface kinetics on AlGaN composition is presented. With the reduced dislocation density of the films grown on AlN substrates, atomically smooth bilayer stepped surfaces are achieved with RMS roughness of less than 50 pm for a 5×5 μm2 AFM scan area. By controlling the surface supersaturation through adjusting the growth rate, a transition from 2D nucleation to step flow was observed. The critical misorientation angle for step-bunching in nominal Al0.70Ga0.30N grown with a growth rate of 600 nm/h on AlN substrates was found to be 0.4°. The composition of bilayer stepped AlGaN was strongly dependent on substrate misorientation angle, where a compositional variation by a factor of two for a change in misorientation angle from 0.05 to 0.40° was observed; this is explained by the different surface diffusion lengths of Ga and Al. Step-bunching resulted in strong compositional inhomogeneity as observed by photoluminescence and scanning transmission electron microscopy studies.

  9. An extrinsic fmax > 100 GHz InAlN/GaN HEMT with AlGaN back barrier

    NASA Astrophysics Data System (ADS)

    Bo, Liu; Zhihong, Feng; Shaobo, Dun; Xiongwen, Zhang; Guodong, Gu; Yuangang, Wang; Peng, Xu; Zezhao, He; Shujun, Cai

    2013-04-01

    We report the DC and RF performance of InAlN/GaN high-electron mobility transistors with AlGaN back barrier grown on SiC substrates. These presented results confirm the high performance that is reachable by InAlN-based technology. The InAlN/GaN HEMT sample showed a high 2DEG mobility of 1550 cm2/(V·s) at a 2DEG density of 1.7 × 1013 cm-2. DC and RF measurements were performed on the unpassivated device with 0.2 μm “T“ gate. The maximum drain current density at VGS = 2 V is close to 1.05 A/mm in a reproducible way. The reduction in gate leakage current helps to increase the frequency performance of AlGaN back barrier devices. The power gain cut-off frequency of a transistor with an AlGaN back barrier is 105 GHz, which is much higher than that of the device without an AlGaN back barrier at the same gate length. These results indicate InAlN/GaN HEMT is a promising candidate for millimeter-wave application.

  10. Breaking the Block: Basic Writers in the Electronic Classroom.

    ERIC Educational Resources Information Center

    Kish, Judith Mara

    2000-01-01

    Fuses theories about Basic Writers and writer's block. Addresses, through the use of hypertext, how computers can help Basic Writers who experience this writing difficulty. Discusses the two main branches of students' difficulties (problems with genre and problems with the linearity of texts) which may be partially alleviated through the…

  11. Angular distribution of polarized light and its effect on light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes.

    PubMed

    Chen, Xinjuan; Ji, Cheng; Xiang, Yong; Kang, Xiangning; Shen, Bo; Yu, Tongjun

    2016-05-16

    Angular distribution of polarized light and its effect on light extraction efficiency (LEE) in AlGaN deep-ultraviolet (DUV) light-emitting diodes (LEDs) are investigated in this paper. A united picture is presented to describe polarized light's emission and propagation processes. It is found that the electron-hole recombinations in AlGaN multiple quantum wells produce three kinds of angularly distributed polarized emissions and propagation process can change their intensity distributions. By investigation the change of angular distributions in 277nm and 215nm LEDs, this work reveals that LEE can be significantly enhanced by modulating the angular distributions of polarized light of DUV LEDs.

  12. Effects of Si-doping on structural, electrical, and optical properties of polar and non-polar AlGaN epi-layers

    NASA Astrophysics Data System (ADS)

    Yang, Hongquan; Zhang, Xiong; Wang, Shuchang; Wang, Yi; Luan, Huakai; Dai, Qian; Wu, Zili; Zhao, Jianguo; Cui, Yiping

    2016-08-01

    The polar (0001)-oriented c-plane and non-polar (11 2 bar 0) -oriented a-plane wurtzite AlGaN epi-layers were successfully grown on polar (0001)-oriented c-plane and semi-polar (1 1 bar 02) -oriented r-plane sapphire substrates, respectively with various Si-doping levels in a low pressure metal organic chemical vapor deposition (MOCVD) system. The morphological, structural, electrical, and optical properties of the polar and non-polar AlGaN epi-layers were studied with scanning electron microscopy (SEM), X-ray diffraction (XRD), Hall effect, and Raman spectroscopy. The characterization results show that Si dopants incorporated into the polar and non-polar AlGaN films induced a relaxation of compressive residual strain and a generation of biaxial tensile strain on the surface in consequence of the dislocation climbing. In particular, it was found that the Si-induced compressive strain relaxation in the non-polar AlGaN samples can be promoted by the structural anisotropy as compared with the polar counterparts. The gradually increased relaxation of compressive residual strain in both polar and non-polar AlGaN samples with increasing Si-doping level was attributed to the Si-induced enhancement in the opportunity for the dislocations to interact and annihilate. This implies that the crystal quality for both polar and non-polar AlGaN epi-layers can be remarkably improved by Si-doping.

  13. Nanocellulose as Material Building Block for Energy and Flexible Electronics

    NASA Astrophysics Data System (ADS)

    Hu, Liangbing

    2014-03-01

    In this talk, I will discuss the fabrications, properties and device applications of functional nanostructured paper based on nanocellulose. Nanostructures with tunable optical, electrical, ionic and mechanical properties will be discussed. Lab-scale demonstration devices, including low-cost Na-ion batteries, microbial fuel cells, solar cells, transparent transistors, actuators and touch screens will be briefly mentioned. These studies show that nanocellulose is a promising green material for electronics and energy devices.

  14. Photochromic molecules as building blocks for molecular electronics.

    PubMed

    Peter, Belser

    2010-01-01

    Energy and electron transfer processes can be easily induced by a photonic excitation of a donor metal complex ([Ru(bpy)3]2), which is connected via a wire-type molecular fragment to an acceptor metal complex ([Os(bpy)3]2+). The rate constant for the transfer process can be determined by emission measurements of the two connected metal complexes. The system can be modified by incorporation of a switching unit or an interrupter into the wire, influencing the transfer process. Such a molecular device corresponds to an interrupter, mimic the same function applied in molecular electronics. We have used organic switches, which show photochromic properties. By irradiation with light of different wavelengths, the switch changes its functionality by a photochemical reaction from an OFF- to an ON-state and vice versa. The ON- respectively OFF-state is manifested by a color change but also in different conductivity properties for energy and electron transfer processes. Therefore, the mentioned molecular device can work as a simple interrupter, controlling the rate of the transfer processes.

  15. Serial block face scanning electron microscopy--the future of cell ultrastructure imaging.

    PubMed

    Hughes, Louise; Hawes, Chris; Monteith, Sandy; Vaughan, Sue

    2014-03-01

    One of the major drawbacks in transmission electron microscopy has been the production of three-dimensional views of cells and tissues. Currently, there is no one suitable 3D microscopy technique that answers all questions and serial block face scanning electron microscopy (SEM) fills the gap between 3D imaging using high-end fluorescence microscopy and the high resolution offered by electron tomography. In this review, we discuss the potential of the serial block face SEM technique for studying the three-dimensional organisation of animal, plant and microbial cells.

  16. Extreme Radiation Hardness and Space Qualification of AlGaN Optoelectronic Devices

    SciTech Connect

    Sun, Ke-Xun; Balakrishnan, Kathik; Hultgren, Eric; Goebel, John; Bilenko, Yuri; Yang, Jinwei; Sun, Wenhong; Shatalov, Max; Hu, Xuhong; Gaska, Remis

    2010-09-21

    Unprecedented radiation hardness and environment robustness are required in the new generation of high energy density physics (HEDP) experiments and deep space exploration. National Ignition Facility (NIF) break-even shots will have a neutron yield of 1015 or higher. The Europa Jupiter System Mission (EJSM) mission instruments will be irradiated with a total fluence of 1012 protons/cm2 during the space journey. In addition, large temperature variations and mechanical shocks are expected in these applications under extreme conditions. Hefty radiation and thermal shields are required for Si and GaAs based electronics and optoelectronics devices. However, for direct illumination and imaging applications, shielding is not a viable option. It is an urgent task to search for new semiconductor technologies and to develop radiation hard and environmentally robust optoelectronic devices. We will report on our latest systematic experimental studies on radiation hardness and space qualifications of AlGaN optoelectronic devices: Deep UV Light Emitting Diodes (DUV LEDs) and solarblind UV Photodiodes (PDs). For custom designed AlGaN DUV LEDs with a central emission wavelength of 255 nm, we have demonstrated its extreme radiation hardness up to 2x1012 protons/cm2 with 63.9 MeV proton beams. We have demonstrated an operation lifetime of over 26,000 hours in a nitrogen rich environment, and 23,000 hours of operation in vacuum without significant power drop and spectral shift. The DUV LEDs with multiple packaging styles have passed stringent space qualifications with 14 g random vibrations, and 21 cycles of 100K temperature cycles. The driving voltage, current, emission spectra and optical power (V-I-P) operation characteristics exhibited no significant changes after the space environmental tests. The DUV LEDs will be used for photoelectric charge management in space flights. For custom designed AlGaN UV photodiodes with a central response wavelength of 255 nm, we have demonstrated

  17. Capping green emitting (Ga,In)N quantum wells with (Al,Ga)N: impact on structural and optical properties

    NASA Astrophysics Data System (ADS)

    Hussain, Sakhawat; Lekhal, Kaddour; Kim-Chauveau, Hyonju; Vennéguès, Philippe; De Mierry, Philippe; Damilano, Benjamin

    2014-03-01

    The difference of growth temperatures between InGaN quantum wells and GaN barriers has detrimental effects on the properties of the wells. Different capping processes of InGaN quantum well with a thin AlGaN layer have been investigated to prevent these effects. Both structural and optical properties of the samples, grown on c-plane sapphire substrates by metalorganic vapor phase epitaxy, were studied through transmission electron microscopy (TEM), x-ray diffraction and room temperature photoluminescence. The average quantum well thickness and its indium composition were determined by digital processing of lattice fringes in cross-sectional TEM images. From the analysis of the well thickness distribution, it is shown that AlGaN as a capping layer helps to compensate an unwanted undulation at the upper InGaN QW-barrier interface. Moreover, when deposited at the same temperature as InGaN, the AlGaN layer is effective in avoiding or reducing the evaporation and/or diffusion of indium from InGaN wells, which results in the thinning of the well. It therefore helps to extend the emission wavelength up to 540 nm with a reduced degradation of the room temperature photoluminescence efficiency.

  18. Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells

    SciTech Connect

    Li, Xiaohang E-mail: dupuis@gatech.edu; Xie, Hongen; Ponce, Fernando A.; Ryou, Jae-Hyun; Detchprohm, Theeradetch; Dupuis, Russell D. E-mail: dupuis@gatech.edu

    2015-12-14

    We demonstrated onset of deep-ultraviolet (DUV) surface stimulated emission (SE) from c-plane AlGaN multiple-quantum well (MQW) heterostructures grown on a sapphire substrate by optical pumping at room temperature. The onset of SE became observable at a pumping power density of 630 kW/cm{sup 2}. Spectral deconvolution revealed superposition of a linearly amplified spontaneous emission peak at λ ∼ 257.0 nm with a full width at half maximum (FWHM) of ∼12 nm and a superlinearly amplified SE peak at λ ∼ 260 nm with a narrow FWHM of less than 2 nm. In particular, the wavelength of ∼260 nm is the shortest wavelength of surface SE from III-nitride MQW heterostructures to date. Atomic force microscopy and scanning transmission electron microscopy measurements were employed to investigate the material and structural quality of the AlGaN heterostructures, showing smooth surface and sharp layer interfaces. This study offers promising results for AlGaN heterostructures grown on sapphire substrates for the development of DUV vertical cavity surface emitting lasers (VCSELs)

  19. Assembly of phosphonic acids on GaN and AlGaN

    NASA Astrophysics Data System (ADS)

    Simpkins, B. S.; Hong, S.; Stine, R.; Mäkinen, A. J.; Theodore, N. D.; Mastro, M. A.; Eddy, C. R., Jr.; Pehrsson, P. E.

    2010-01-01

    Self-assembled monolayers of octadecylphosphonic acid and 16-phosphonohexadecanoic acid (PHDA) were formed on the semiconductor substrates gallium nitride (GaN) and aluminium gallium nitride (AlGaN). The presence of the molecular layers was verified through x-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy. Structural information was acquired with infrared spectroscopy which verified the bonding orientation of the carboxyl-containing PHDA. The impact of the molecular layers on the channel conductivity and the surface electronic structure of an AlGaN/GaN heterostructure was measured. Our results indicate that pinning of the surface Fermi level prohibits modification of the channel conductivity by the layer. However, a surface dipole of ~0.8 eV is present and associated with both phosphonic acid layers. These results are of direct relevance to field-effect-based biochemical sensors and metal-semiconductor contact formation for this system and provide a fundamental basis for further applications of GaN and AlGaN technology in the fields of biosensing and microelectronics.

  20. CBED study of grain misorientations in AlGaN epilayers.

    PubMed

    Sahonta, S-L; Cherns, D; Liu, R; Ponce, F A; Amano, H; Akasaki, I

    2005-04-01

    Large angle convergent beam electron diffraction (LACBED) has been used to examine AlGaN epilayers grown by facet-controlled epitaxial lateral overgrowth on GaN/(0001) sapphire substrates in prototype UV laser structures. The substrates, defined by masks with seed openings along a <10-10> stripe direction, had GaN seed columns with {11-22} surfaces. Studies were carried out on cross-sectional samples cut perpendicular to the stripe axis. An LACBED analysis of the orientation of (000 2) planes, and of the (11-20) planes parallel to the stripe axis, revealed that the AlGaN wings were both rotated by angles of 1-2 x 10(-2)radians about the 10-10 stripe axis with respect to the underlying GaN, and distorted due to misfit strains. It is shown that the results are consistent with the observed structure of the AlGaN/GaN and the wing/wing boundaries, and with a new model for the generation of a-type misfit dislocations at the AlGaN/GaN interface. PMID:15777597

  1. Power Block Geometry Applied to the Building of Power Electronics Converters

    ERIC Educational Resources Information Center

    dos Santos, E. C., Jr.; da Silva, E. R. C.

    2013-01-01

    This paper proposes a new methodology, Power Block Geometry (PBG), for the presentation of power electronics topologies that process ac voltage. PBG's strategy uses formal methods based on a geometrical representation with particular rules and defines a universe with axioms and conjectures to establish a formation law. It allows power…

  2. Nuclear Technology. Course 27: Metrology. Module 27-3, Gage Blocks, Mechanical Comparators and Electronic Comparators.

    ERIC Educational Resources Information Center

    Selleck, Ben; Espy, John

    This third in a series of eight modules for a course titled Metrology describes gage blocks and mechanical and electronic comparators. The module follows a typical format that includes the following sections: (1) introduction, (2) module prerequisites, (3) objectives, (4) notes to instructor/student, (5) subject matter, (6) materials needed, (7)…

  3. Block Diagram of a Black and White TV. Lesson Plan No. 1, Electronic Tech 1.

    ERIC Educational Resources Information Center

    Hollandsworth, Donald S.

    This lesson, which is part of a course in electronics technology, explains the workings of a black-and-white television. It covers the structure and function of the 18 structural blocks of black-and-white television sets. The following materials are included: a lesson plan, transparency masters, and student handouts. The lesson plan includes lists…

  4. Optical Blocking of Electron Tunneling into a Single Self-Assembled Quantum Dot.

    PubMed

    Kurzmann, A; Merkel, B; Labud, P A; Ludwig, A; Wieck, A D; Lorke, A; Geller, M

    2016-07-01

    Time-resolved resonance fluorescence (RF) is used to analyze electron tunneling between a single self-assembled quantum dot (QD) and an electron reservoir. In equilibrium, the RF intensity reflects the average electron occupation of the QD and exhibits a gate voltage dependence that is given by the Fermi distribution in the reservoir. In the time-resolved signal, however, we find that the relaxation rate for electron tunneling is, surprisingly, independent of the occupation in the charge reservoir-in contrast to results from all-electrical transport measurements. Using a master equation approach, which includes both the electron tunneling and the optical excitation or recombination, we are able to explain the experimental data by optical blocking, which also reduces the electron tunneling rate when the QD is occupied by an exciton. PMID:27419589

  5. Pauli blocking and final-state interaction in electron-nucleus quasielastic scattering

    SciTech Connect

    Liu, Lon-chang

    2008-01-01

    The nucleon final-state interaction in electron-nucleus quasielastic scattering is studied. Based on the unitarity equation satisfied by the scattering-wave operators, a doorway model is developed to implement the Pauli-blocking of nucleon knockout. The model is complementary to the commonly used nuclear Fermi gas model which can not be applied with confidence to light- and medium-mass nuclei. Pauli blocking in these latter nuclei is illustrated with the case of Coulomb interaction. Significant effects are noted for beam energies below {approx} 350 MeV/c. Extension of the model to high-energy hadron-nucleus quasielastic scatterings is discussed.

  6. High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

    NASA Astrophysics Data System (ADS)

    Reddy, Pramod; Washiyama, Shun; Kaess, Felix; Hayden Breckenridge, M.; Hernandez-Balderrama, Luis H.; Haidet, Brian B.; Alden, Dorian; Franke, Alexander; Sarkar, Biplab; Kohn, Erhard; Collazo, Ramon; Sitar, Zlatko

    2016-04-01

    In this work, we employed X-ray photoelectron spectroscopy to determine the band offsets and interface Fermi level at the heterojunction formed by stoichiometric silicon nitride deposited on AlxGa1-xN (of varying Al composition "x") via low pressure chemical vapor deposition. Silicon nitride is found to form a type II staggered band alignment with AlGaN for all Al compositions (0 ≤ x ≤ 1) and present an electron barrier into AlGaN even at higher Al compositions, where Eg(AlGaN) > Eg(Si3N4). Further, no band bending is observed in AlGaN for x ≤ 0.6 and a reduced band bending (by ˜1 eV in comparison to that at free surface) is observed for x > 0.6. The Fermi level in silicon nitride is found to be at 3 eV with respect to its valence band, which is likely due to silicon (≡Si0/-1) dangling bonds. The presence of band bending for x > 0.6 is seen as a likely consequence of Fermi level alignment at Si3N4/AlGaN hetero-interface and not due to interface states. Photoelectron spectroscopy results are corroborated by current-voltage-temperature and capacitance-voltage measurements. A shift in the interface Fermi level (before band bending at equilibrium) from the conduction band in Si3N4/n-GaN to the valence band in Si3N4/p-GaN is observed, which strongly indicates a reduction in mid-gap interface states. Hence, stoichiometric silicon nitride is found to be a feasible passivation and dielectric insulation material for AlGaN at any composition.

  7. CONDENSED MATTER: STRUCTURE, THERMAL AND MECHANICAL PROPERTIES: The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates

    NASA Astrophysics Data System (ADS)

    Wu, Yu-Xin; Zhu, Jian-Jun; Zhao, De-Gang; Liu, Zong-Shun; Jiang, De-Sheng; Zhang, Shu-Ming; Wang, Yu-Tian; Wang, Hui; Chen, Gui-Feng; Yang, Hui

    2009-10-01

    High-quality and nearly crack-free GaN epitaxial layer was obtained by inserting a single AlGaN interlayer between GaN epilayer and high-temperature AlN buffer layer on Si (111) substrate by metalorganic chemical vapor deposition. This paper investigates the effect of AlGaN interlayer on the structural properties of the resulting GaN epilayer. It confirms from the optical microscopy and Raman scattering spectroscopy that the AlGaN interlayer has a remarkable effect on introducing relative compressive strain to the top GaN layer and preventing the formation of cracks. X-ray diffraction and transmission electron microscopy analysis reveal that a significant reduction in both screw and edge threading dislocations is achieved in GaN epilayer by the insertion of AlGaN interlayer. The process of threading dislocation reduction in both AlGaN interlayer and GaN epilayer is demonstrated.

  8. Three-dimensional architecture of podocytes revealed by block-face scanning electron microscopy

    PubMed Central

    Ichimura, Koichiro; Miyazaki, Naoyuki; Sadayama, Shoji; Murata, Kazuyoshi; Koike, Masato; Nakamura, Kei-ichiro; Ohta, Keisuke; Sakai, Tatsuo

    2015-01-01

    Block-face imaging is a scanning electron microscopic technique which enables easier acquisition of serial ultrastructural images directly from the surface of resin-embedded biological samples with a similar quality to transmission electron micrographs. In the present study, we analyzed the three-dimensional architecture of podocytes using serial block-face imaging. It was previously believed that podocytes are divided into three kinds of subcellular compartment: cell body, primary process, and foot process, which are simply aligned in this order. When the reconstructed podocytes were viewed from their basal side, the foot processes were branched from a ridge-like prominence, which was formed on the basal surface of the primary process and was similar to the usual foot processes in structure. Moreover, from the cell body, the foot processes were also emerged via the ridge-like prominence, as found in the primary process. The ridge-like prominence anchored the cell body and primary process to the glomerular basement membrane, and connected the foot processes to the cell body and primary process. In conclusion, serial block-face imaging is a powerful tool for clear understanding the three-dimensional architecture of podocytes through its ability to reveal novel structures which were difficult to determine by conventional transmission and scanning electron microscopes alone. PMID:25759085

  9. Three-dimensional architecture of podocytes revealed by block-face scanning electron microscopy.

    PubMed

    Ichimura, Koichiro; Miyazaki, Naoyuki; Sadayama, Shoji; Murata, Kazuyoshi; Koike, Masato; Nakamura, Kei-Ichiro; Ohta, Keisuke; Sakai, Tatsuo

    2015-01-01

    Block-face imaging is a scanning electron microscopic technique which enables easier acquisition of serial ultrastructural images directly from the surface of resin-embedded biological samples with a similar quality to transmission electron micrographs. In the present study, we analyzed the three-dimensional architecture of podocytes using serial block-face imaging. It was previously believed that podocytes are divided into three kinds of subcellular compartment: cell body, primary process, and foot process, which are simply aligned in this order. When the reconstructed podocytes were viewed from their basal side, the foot processes were branched from a ridge-like prominence, which was formed on the basal surface of the primary process and was similar to the usual foot processes in structure. Moreover, from the cell body, the foot processes were also emerged via the ridge-like prominence, as found in the primary process. The ridge-like prominence anchored the cell body and primary process to the glomerular basement membrane, and connected the foot processes to the cell body and primary process. In conclusion, serial block-face imaging is a powerful tool for clear understanding the three-dimensional architecture of podocytes through its ability to reveal novel structures which were difficult to determine by conventional transmission and scanning electron microscopes alone.

  10. Serial block face scanning electron microscopy and the reconstruction of plant cell membrane systems.

    PubMed

    Kittelmann, M; Hawes, C; Hughes, L

    2016-08-01

    Serial block face imaging with the scanning electron microscope has been developed as an alternative to serial sectioning and transmission electron microscopy for the ultrastructural analysis of the three-dimensional organization of cells and tissues. An ultramicrotome within the microscope specimen chamber permits sectioning and imaging to a depth of many microns within resin-embedded specimens. The technology has only recently been adopted by plant microscopists and here we describe some specimen preparation procedures suitable for plant tissue, suggested microscope imaging parameters and discuss the software required for image reconstruction and analysis. PMID:27197647

  11. Serial block face scanning electron microscopy and the reconstruction of plant cell membrane systems.

    PubMed

    Kittelmann, M; Hawes, C; Hughes, L

    2016-08-01

    Serial block face imaging with the scanning electron microscope has been developed as an alternative to serial sectioning and transmission electron microscopy for the ultrastructural analysis of the three-dimensional organization of cells and tissues. An ultramicrotome within the microscope specimen chamber permits sectioning and imaging to a depth of many microns within resin-embedded specimens. The technology has only recently been adopted by plant microscopists and here we describe some specimen preparation procedures suitable for plant tissue, suggested microscope imaging parameters and discuss the software required for image reconstruction and analysis.

  12. Neutral beamline with ion energy recovery based on magnetic blocking of electrons

    DOEpatents

    Stirling, William L.

    1982-01-01

    A neutral beamline generator with energy recovery of the full-energy ion ponent of the beam based on magnetic blocking of electrons is provided. Ions from a positive ion source are accelerated to the desired beam energy from a slightly positive potential level with respect to ground through a neutralizer cell by means of a negative acceleration voltage. The unneutralized full-energy ion component of the beam exiting the neutralizer are retarded and slightly deflected and the electrons in the neutralizer are blocked by a magnetic field generated transverse to the beamline. An electron collector in the form of a coaxial cylinder surrounding and protruding axial a few centimeters beyond the neutralizer exit terminates the electrons which exit the neutralizer in an E x B drift to the collector when the collector is biased a few hundred volts positive with respect to the neutralizer voltage. The neutralizer is operated at the negative acceleration voltage, and the deflected full energy ions are decelerated and the charge collected at ground potential thereby expending none of their energy received from the acceleration power supply.

  13. Dual Band Deep Ultraviolet AlGaN Photodetectors

    NASA Technical Reports Server (NTRS)

    Aslam, S.; Miko, L.; Stahle, C.; Franz, D.; Pugel, D.; Guan, B.; Zhang, J. P.; Gaska, R.

    2007-01-01

    We report on the design, fabrication and characterization of a back-illuminated voltage bias selectable dual-band AlGaN UV photodetector. The photodetector can separate UVA and W-B band radiation by bias switching a two terminal n-p-n homojunction structure that is fabricated in the same pixel. When a forward bias is applied between the top and bottom electrodes, the detector can sense UV-A and reject W-B band radiation. Alternatively, under reverse bias, the photodetector can sense UV-B and reject UV-A band radiation.

  14. Neutral beamline with ion energy recovery based on magnetic blocking of electrons

    DOEpatents

    Stirling, W.L.

    1980-07-01

    A neutral beamline generator with energy recovery of the full-energy ion component of the beam based on magnetic blocking of electrons is provided. Ions from a positive ion source are accelerated to the desired beam energy from a slightly positive potential level with respect to ground through a neutralizer cell by means of a negative acceleration voltage. The unneutralized full-energy ion component of the beam exiting the neutralizer are retarded and slightly deflected and the elecrons in the neutralizer are blocked by a magnetic field generated transverse to the beamline. An electron collector in the form of a coaxial cylinder surrounding and protruding axial a few centimeters beyond the neutralizer exit terminates the electrons which exit the neutralizer in an E x B drift to the collector when the collector is biased a few hundred volts positive with respect to the neutralizer voltage. The neutralizer is operated at the negative acceleration voltage. The neutralizer is operated at the negative acceleration voltage, and the deflected full energy ions are decelerated and the charge collected at ground potential thereby expending none of their energy received from the acceleration power supply.

  15. Electrochemically oxidized electronic and ionic conducting nanostructured block copolymers for lithium battery electrodes.

    PubMed

    Patel, Shrayesh N; Javier, Anna E; Balsara, Nitash P

    2013-07-23

    Block copolymers that can simultaneously conduct electronic and ionic charges on the nanometer length scale can serve as innovative conductive binder material for solid-state battery electrodes. The purpose of this work is to study the electronic charge transport of poly(3-hexylthiophene)-b-poly(ethylene oxide) (P3HT-PEO) copolymers electrochemically oxidized with lithium bis(trifluoromethanesulfonyl) imide (LiTFSI) salt in the context of a lithium battery charge/discharge cycle. We use a solid-state three-terminal electrochemical cell that enables simultaneous conductivity measurements and control over electrochemical doping of P3HT. At low oxidation levels (ratio of moles of electrons removed to moles of 3-hexylthiophene moieties in the electrode), the electronic conductivity (σe,ox) increases from 10(-7) S/cm to 10(-4) S/cm. At high oxidation levels, σe,ox approaches 10(-2) S/cm. When P3HT-PEO is used as a conductive binder in a positive electrode with LiFePO4 active material, P3HT is electrochemically active within the voltage window of a charge/discharge cycle. The electronic conductivity of the P3HT-PEO binder is in the 10(-4) to 10(-2) S/cm range over most of the potential window of the charge/discharge cycle. This allows for efficient electronic conduction, and observed charge/discharge capacities approach the theoretical limit of LiFePO4. However, at the end of the discharge cycle, the electronic conductivity decreases sharply to 10(-7) S/cm, which means the "conductive" binder is now electronically insulating. The ability of our conductive binder to switch between electronically conducting and insulating states in the positive electrode provides an unprecedented route for automatic overdischarge protection in rechargeable batteries.

  16. Block Copolymer-Tuned Fullerene Electron Transport Layer Enhances the Efficiency of Perovskite Photovoltaics.

    PubMed

    Lin, Hsi-Kuei; Su, Yu-Wei; Chen, Hsiu-Cheng; Huang, Yi-Jiun; Wei, Kung-Hwa

    2016-09-21

    In this study, we enhanced the power conversion efficiency (PCE) of perovskite solar cells by employing an electron transfer layer (ETL) comprising [6,6]phenyl-C61-butyric acid methyl ester (PC61BM) and, to optimize its morphology, a small amount of the block copolymer polystyrene-b-poly(ethylene oxide) (PS-b-PEO), positioned on the perovskite active layer. When incorporating 0.375 wt % PS-b-PEO into PC61BM, the PCE of the perovskite photovoltaic device increased from 9.4% to 13.4%, a relative increase of 43%, because of a large enhancement in the fill factor of the device. To decipher the intricate morphology of the ETL, we used synchrotron grazing-incidence small-angle X-ray scattering for determining the PC61BM cluster size, atomic force microscopy and scanning electron microscopy for probing the surface, and transmission electron microscopy for observing the aggregation of PC61BM in the ETL. We found that the interaction between PS-b-PEO and PC61BM resulted in smaller PC61BM clusters that further aggregated into dendritic structures in some domains, a result of the similar polarities of the PS block and PC61BM; this behavior could be used to tune the morphology of the ETL. The optimal PS-b-PEO-mediated PC61BM cluster size in the ETL was 17 nm, a large reduction from 59 nm for the pristine PC61BM layer. This approach of incorporating a small amount of nanostructured block copolymer into a fullerene allowed us to effectively tune the morphology of the ETL on the perovskite active layer and resulted in enhanced fill factors of the devices and thus their device efficiency.

  17. Block Copolymer-Tuned Fullerene Electron Transport Layer Enhances the Efficiency of Perovskite Photovoltaics.

    PubMed

    Lin, Hsi-Kuei; Su, Yu-Wei; Chen, Hsiu-Cheng; Huang, Yi-Jiun; Wei, Kung-Hwa

    2016-09-21

    In this study, we enhanced the power conversion efficiency (PCE) of perovskite solar cells by employing an electron transfer layer (ETL) comprising [6,6]phenyl-C61-butyric acid methyl ester (PC61BM) and, to optimize its morphology, a small amount of the block copolymer polystyrene-b-poly(ethylene oxide) (PS-b-PEO), positioned on the perovskite active layer. When incorporating 0.375 wt % PS-b-PEO into PC61BM, the PCE of the perovskite photovoltaic device increased from 9.4% to 13.4%, a relative increase of 43%, because of a large enhancement in the fill factor of the device. To decipher the intricate morphology of the ETL, we used synchrotron grazing-incidence small-angle X-ray scattering for determining the PC61BM cluster size, atomic force microscopy and scanning electron microscopy for probing the surface, and transmission electron microscopy for observing the aggregation of PC61BM in the ETL. We found that the interaction between PS-b-PEO and PC61BM resulted in smaller PC61BM clusters that further aggregated into dendritic structures in some domains, a result of the similar polarities of the PS block and PC61BM; this behavior could be used to tune the morphology of the ETL. The optimal PS-b-PEO-mediated PC61BM cluster size in the ETL was 17 nm, a large reduction from 59 nm for the pristine PC61BM layer. This approach of incorporating a small amount of nanostructured block copolymer into a fullerene allowed us to effectively tune the morphology of the ETL on the perovskite active layer and resulted in enhanced fill factors of the devices and thus their device efficiency. PMID:27574718

  18. Angular distribution of polarized light and its effect on light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes.

    PubMed

    Chen, Xinjuan; Ji, Cheng; Xiang, Yong; Kang, Xiangning; Shen, Bo; Yu, Tongjun

    2016-05-16

    Angular distribution of polarized light and its effect on light extraction efficiency (LEE) in AlGaN deep-ultraviolet (DUV) light-emitting diodes (LEDs) are investigated in this paper. A united picture is presented to describe polarized light's emission and propagation processes. It is found that the electron-hole recombinations in AlGaN multiple quantum wells produce three kinds of angularly distributed polarized emissions and propagation process can change their intensity distributions. By investigation the change of angular distributions in 277nm and 215nm LEDs, this work reveals that LEE can be significantly enhanced by modulating the angular distributions of polarized light of DUV LEDs. PMID:27409966

  19. The light-matter interaction of a single semiconducting AlGaN nanowire and noble metal Au nanoparticles in the sub-diffraction limit.

    PubMed

    Sivadasan, A K; Madapu, Kishore K; Dhara, Sandip

    2016-08-24

    Near field scanning optical microscopy (NSOM) is not only a tool for imaging of sub-diffraction limited objects but also a prominent characteristic tool for understanding the intrinsic properties of nanostructures. In order to understand light-matter interactions in the near field regime using a NSOM technique with an excitation of 532 nm (2.33 eV), we selected an isolated single semiconducting AlGaN nanowire (NW) of diameter ∼120 nm grown via a vapor liquid solid (VLS) mechanism along with a metallic Au nanoparticle (NP) catalyst. The role of electronic transitions from different native defect related energy states of AlGaN is discussed in understanding the NSOM images for the semiconducting NW. The effect of strong surface plasmon resonance absorption of an excitation laser on the NSOM images for Au NPs, involved in the VLS growth mechanism of NWs, is also observed. PMID:27511614

  20. The light-matter interaction of a single semiconducting AlGaN nanowire and noble metal Au nanoparticles in the sub-diffraction limit.

    PubMed

    Sivadasan, A K; Madapu, Kishore K; Dhara, Sandip

    2016-08-24

    Near field scanning optical microscopy (NSOM) is not only a tool for imaging of sub-diffraction limited objects but also a prominent characteristic tool for understanding the intrinsic properties of nanostructures. In order to understand light-matter interactions in the near field regime using a NSOM technique with an excitation of 532 nm (2.33 eV), we selected an isolated single semiconducting AlGaN nanowire (NW) of diameter ∼120 nm grown via a vapor liquid solid (VLS) mechanism along with a metallic Au nanoparticle (NP) catalyst. The role of electronic transitions from different native defect related energy states of AlGaN is discussed in understanding the NSOM images for the semiconducting NW. The effect of strong surface plasmon resonance absorption of an excitation laser on the NSOM images for Au NPs, involved in the VLS growth mechanism of NWs, is also observed.

  1. Effect of surface pretreatment on interfacial chemical bonding states of atomic layer deposited ZrO{sub 2} on AlGaN

    SciTech Connect

    Ye, Gang; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Ang, Kian Siong; Wang, Hong; Liu, Zhi Hong

    2015-09-15

    Atomic layer deposition (ALD) of ZrO{sub 2} on native oxide covered (untreated) and buffered oxide etchant (BOE) treated AlGaN surface was analyzed by utilizing x-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy. Evidenced by Ga–O and Al–O chemical bonds by XPS, parasitic oxidation during deposition is largely enhanced on BOE treated AlGaN surface. Due to the high reactivity of Al atoms, more prominent oxidation of Al atoms is observed, which leads to thicker interfacial layer formed on BOE treated surface. The results suggest that native oxide on AlGaN surface may serve as a protecting layer to inhibit the surface from further parasitic oxidation during ALD. The findings provide important process guidelines for the use of ALD ZrO{sub 2} and its pre-ALD surface treatments for high-k AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors and other related device applications.

  2. Enhancement of optical polarization degree of AlGaN quantum wells by using staggered structure.

    PubMed

    Wang, Weiying; Lu, Huimin; Fu, Lei; He, Chenguang; Wang, Mingxing; Tang, Ning; Xu, Fujun; Yu, Tongjun; Ge, Weikun; Shen, Bo

    2016-08-01

    Staggered AlGaN quantum wells (QWs) are designed to enhance the transverse-electric (TE) polarized optical emission in deep ultraviolet (DUV) light- emitting diodes (LED). The optical polarization properties of the conventional and staggered AlGaN QWs are investigated by a theoretical model based on the k·p method as well as polarized photoluminescence (PL) measurements. Based on an analysis of the valence subbands and momentum matrix elements, it is found that AlGaN QWs with step-function-like Al content in QWs offers much stronger TE polarized emission in comparison to that from conventional AlGaN QWs. Experimental results show that the degree of the PL polarization at room temperature can be enhanced from 20.8% of conventional AlGaN QWs to 40.2% of staggered AlGaN QWs grown by MOCVD, which is in good agreement with the theoretical simulation. It suggests that polarization band engineering via staggered AlGaN QWs can be well applied in high efficiency AlGaN-based DUV LEDs. PMID:27505782

  3. Reporting methods for processing and analysis of data from serial block face scanning electron microscopy.

    PubMed

    Borrett, S; Hughes, L

    2016-07-01

    Serial block face scanning electron microscopy is rapidly becoming a popular tool for collecting large three-dimensional data sets of cells and tissues, filling the resolution and volume gap between fluorescence microscopy and high-resolution electron microscopy. The automated collection of data within the instrument occupies the smallest proportion of the time required to prepare and analyse biological samples. It is the processing of data once it has been collected that proves the greatest challenge. In this review we discuss different methods that are used to process data. We suggest potential workflows that can be used to facilitate the transfer of raw image stacks into quantifiable data as well as propose a set of criteria for reporting methods for data analysis to enable replication of work. PMID:26800017

  4. An electrically injected AlGaN nanowire laser operating in the ultraviolet-C band

    SciTech Connect

    Zhao, S.; Liu, X.; Kang, J.; Mi, Z.; Woo, S. Y.; Botton, G. A.

    2015-07-27

    We have investigated the molecular beam epitaxial growth and characterization of nearly defect-free AlGaN nanowire heterostructures grown directly on Si substrate. By exploiting the Anderson localization of light, we have demonstrated electrically injected AlGaN nanowire lasers that can operate at 262.1 nm. The threshold current density is 200 A/cm{sup 2} at 77 K. The relatively low threshold current is attributed to the high Q-factor of the random cavity and the three-dimensional quantum confinement offered by the atomic-scale composition modulation in self-organized AlGaN nanowires.

  5. Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO{sub 2} grown by atomic layer deposition

    SciTech Connect

    Ye, Gang; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Ang, Kian Siong; Wang, Hong; Liu, Zhi Hong

    2015-03-02

    The effect of post-deposition annealing on chemical bonding states at interface between Al{sub 0.5}Ga{sub 0.5}N and ZrO{sub 2} grown by atomic layer deposition (ALD) is studied by angle-resolved x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. It has been found that both of Al-O/Al 2p and Ga-O/Ga 3d area ratio decrease at annealing temperatures lower than 500 °C, which could be attributed to “clean up” effect of ALD-ZrO{sub 2} on AlGaN. Compared to Ga spectra, a much larger decrease in Al-O/Al 2p ratio at a smaller take-off angle θ is observed, which indicates higher effectiveness of the passivation of Al-O bond than Ga-O bond through “clean up” effect near the interface. However, degradation of ZrO{sub 2}/AlGaN interface quality due to re-oxidation at higher annealing temperature (>500 °C) is also found. The XPS spectra clearly reveal that Al atoms at ZrO{sub 2}/AlGaN interface are easier to get oxidized as compared with Ga atoms.

  6. Polarization engineering of back-illuminated separate absorption and multiplication AlGaN avalanche photodiodes

    NASA Astrophysics Data System (ADS)

    Yang, Guofeng; Wang, Fuxue

    2016-08-01

    The back-illuminated separate absorption and multiplication AlGaN avalanche photodiodes (APDs) with a p-type graded AlGaN layer have been designed to investigate the polarization engineering on the performance of the devices. The calculated results show that the APD with p-graded AlGaN layer exhibits lower avalanche breakdown voltage and increased maximum multiplication gain compared to the structure with conventional p-type AlGaN layer. The improved performance of the designed APD is numerically explained by the polarization-assisted enhancement of the ionization electric field in the multiplication region and polarization doping effect caused by the p-type graded layer.

  7. Monitoring and Controlling of Strain During MOCVD of AlGaN for UV Optoelectronics

    SciTech Connect

    Han, J.; Crawford, M.H.; Shul, R.J.; Hearne, S.J.; Chason, E.; Figiel, J.J.; Banas, M.

    1999-01-14

    The grown-in tensile strain, due to a lattice mismatch between AlGaN and GaN, is responsible for the observed cracking that seriously limits the feasibility of nitride-based ultraviolet (UV) emitters. We report in-situ monitoring of strain/stress during MOCVD of AlGaN based on a wafer-curvature measurement technique. The strain/stress measurement confirms the presence of tensile strain during growth of AlGaN pseudomorphically on a thick GaN layer. Further growth leads to the onset of stress relief through crack generation. We find that the growth of AlGaN directly on low-temperature (LT) GaN or AlN buffer layers results in a reduced and possibly controllable strain.

  8. Electron transport mechanism of bathocuproine exciton blocking layer in organic photovoltaics.

    PubMed

    Lee, Jeihyun; Park, Soohyung; Lee, Younjoo; Kim, Hyein; Shin, Dongguen; Jeong, Junkyeong; Jeong, Kwangho; Cho, Sang Wan; Lee, Hyunbok; Yi, Yeonjin

    2016-02-21

    Efficient exciton management is a key issue to improve the power conversion efficiency of organic photovoltaics (OPVs). It is well known that the insertion of an exciton blocking layer (ExBL) having a large band gap promotes the efficient dissociation of photogenerated excitons at the donor-acceptor interface. However, the large band gap induces an energy barrier which disrupts the charge transport. Therefore, building an adequate strategy based on the knowledge of the true charge transport mechanism is necessary. In this study, the true electron transport mechanism of a bathocuproine (BCP) ExBL in OPVs is comprehensively investigated by in situ ultraviolet photoemission spectroscopy, inverse photoemission spectroscopy, density functional theory calculation, and impedance spectroscopy. The chemical interaction between deposited Al and BCP induces new states within the band gap of BCP, so that electrons can transport through these new energy levels. Localized trap states are also formed upon the Al-BCP interaction. The activation energy of these traps is estimated with temperature-dependent conductance measurements to be 0.20 eV. The Al-BCP interaction induces both transport and trap levels in the energy gap of BCP and their interplay results in the electron transport observed.

  9. Electron transport mechanism of bathocuproine exciton blocking layer in organic photovoltaics.

    PubMed

    Lee, Jeihyun; Park, Soohyung; Lee, Younjoo; Kim, Hyein; Shin, Dongguen; Jeong, Junkyeong; Jeong, Kwangho; Cho, Sang Wan; Lee, Hyunbok; Yi, Yeonjin

    2016-02-21

    Efficient exciton management is a key issue to improve the power conversion efficiency of organic photovoltaics (OPVs). It is well known that the insertion of an exciton blocking layer (ExBL) having a large band gap promotes the efficient dissociation of photogenerated excitons at the donor-acceptor interface. However, the large band gap induces an energy barrier which disrupts the charge transport. Therefore, building an adequate strategy based on the knowledge of the true charge transport mechanism is necessary. In this study, the true electron transport mechanism of a bathocuproine (BCP) ExBL in OPVs is comprehensively investigated by in situ ultraviolet photoemission spectroscopy, inverse photoemission spectroscopy, density functional theory calculation, and impedance spectroscopy. The chemical interaction between deposited Al and BCP induces new states within the band gap of BCP, so that electrons can transport through these new energy levels. Localized trap states are also formed upon the Al-BCP interaction. The activation energy of these traps is estimated with temperature-dependent conductance measurements to be 0.20 eV. The Al-BCP interaction induces both transport and trap levels in the energy gap of BCP and their interplay results in the electron transport observed. PMID:26821701

  10. Functionalized carbon nanoparticles, blacks and soots as electron-transfer building blocks and conduits.

    PubMed

    Lawrence, Katherine; Baker, Charlotte L; James, Tony D; Bull, Steven D; Lawrence, Ruth; Mitchels, John M; Opallo, Marcin; Arotiba, Omotayo A; Ozoemena, Kenneth I; Marken, Frank

    2014-05-01

    Functionalized carbon nanoparticles (or blacks) have promise as novel active high-surface-area electrode materials, as conduits for electrons to enzymes or connections through lipid films, or as nano-building blocks in electroanalysis. With previous applications of bare nanoblacks and composites mainly in electrochemical charge storage and as substrates in fuel cell devices, the full range of benefits of bare and functionalized carbon nanoparticles in assemblies and composite (bio)electrodes is still emerging. Carbon nanoparticles are readily surface-modified, functionalized, embedded, or assembled into nanostructures, employed in bioelectrochemical systems, and incorporated into novel electrochemical sensing devices. This focus review summarizes aspects of a rapidly growing field and some of the recent developments in carbon nanoparticle functionalization with potential applications in (bio)electrochemical, photoelectrochemical, and electroanalytical processes.

  11. Analysis of Brain Mitochondria Using Serial Block-Face Scanning Electron Microscopy.

    PubMed

    Mukherjee, Konark; Clark, Helen R; Chavan, Vrushali; Benson, Emily K; Kidd, Grahame J; Srivastava, Sarika

    2016-01-01

    Human brain is a high energy consuming organ that mainly relies on glucose as a fuel source. Glucose is catabolized by brain mitochondria via glycolysis, tri-carboxylic acid (TCA) cycle and oxidative phosphorylation (OXPHOS) pathways to produce cellular energy in the form of adenosine triphosphate (ATP). Impairment of mitochondrial ATP production causes mitochondrial disorders, which present clinically with prominent neurological and myopathic symptoms. Mitochondrial defects are also present in neurodevelopmental disorders (e.g. autism spectrum disorder) and neurodegenerative disorders (e.g. amyotrophic lateral sclerosis, Alzheimer's and Parkinson's diseases). Thus, there is an increased interest in the field for performing 3D analysis of mitochondrial morphology, structure and distribution under both healthy and disease states. The brain mitochondrial morphology is extremely diverse, with some mitochondria especially those in the synaptic region being in the range of <200 nm diameter, which is below the resolution limit of traditional light microscopy. Expressing a mitochondrially-targeted green fluorescent protein (GFP) in the brain significantly enhances the organellar detection by confocal microscopy. However, it does not overcome the constraints on the sensitivity of detection of relatively small sized mitochondria without oversaturating the images of large sized mitochondria. While serial transmission electron microscopy has been successfully used to characterize mitochondria at the neuronal synapse, this technique is extremely time-consuming especially when comparing multiple samples. The serial block-face scanning electron microscopy (SBFSEM) technique involves an automated process of sectioning, imaging blocks of tissue and data acquisition. Here, we provide a protocol to perform SBFSEM of a defined region from rodent brain to rapidly reconstruct and visualize mitochondrial morphology. This technique could also be used to provide accurate information on

  12. MOCVD growth of AlGaN UV LEDs

    SciTech Connect

    Han, J.; Crawford, M.H.

    1998-09-01

    Issues related to the MOCVD growth of AlGaN, specifically the gas-phase parasitic reactions among TMG, TMA, and NH{sub 3}, are studied using an in-situ optical reflectometer. It is observed that the presence of the well-known gas phase adduct (TMA: NH{sub 3}) could seriously hinder the incorporation behavior of TMGa. Relatively low reactor pressures (30--50 Torr) are employed to grow an AlGaN/GaN SCH QW p-n diode structure. The UV emission at 360 nm (FWHM {approximately} 10 nm) represents the first report of LED operation from an indium-free GaN QW diode.

  13. Effect of Orientation on Tensile Properties of Inconel 718 Block Fabricated with Electron Beam Freeform Fabrication (EBF3)

    NASA Technical Reports Server (NTRS)

    Bird, R. Keith; Atherton, Todd S.

    2010-01-01

    Electron beam freeform fabrication (EBF3) direct metal deposition processing was used to fabricate an Inconel 718 bulk block deposit. Room temperature tensile properties were measured as a function of orientation and location within the block build. This study is a follow-on activity to previous work on Inconel 718 EBF3 deposits that were too narrow to allow properties to be measured in more than one orientation

  14. Influence of AlN thickness on AlGaN epilayer grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Jayasakthi, M.; Juillaguet, S.; Peyre, H.; Konczewicz, L.; Baskar, K.; Contreras, S.

    2016-10-01

    AlGaN/AlN layers were grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. The AlN buffer thickness was varied from 400 nm to 800 nm. The AlGaN layer thickness was 1000 nm. The crystalline quality, thickness and composition of AlGaN were determined using high resolution X-ray diffraction (HRXRD). The threading dislocation density (TDD) was found to decrease with increase of AlN layer thickness. Reciprocal space mapping (RSM) was used to estimate the strain and relaxation between AlGaN and AlN. The optical properties of AlGaN layers were investigated by temperature dependent photoluminescence (PL). PL intensities of AlGaN layers increases with increasing the AlN thickness. The surface morphology of AlGaN was studied by atomic force microscopy (AFM). Root mean square (RMS) roughness values were found to be decreased while increase of AlN thickness.

  15. AlGaN channel field effect transistors with graded heterostructure ohmic contacts

    NASA Astrophysics Data System (ADS)

    Bajaj, Sanyam; Akyol, Fatih; Krishnamoorthy, Sriram; Zhang, Yuewei; Rajan, Siddharth

    2016-09-01

    We report on ultra-wide bandgap (UWBG) Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistors (MISFETs) with heterostructure engineered low-resistance ohmic contacts. The low intrinsic electron affinity of AlN (0.6 eV) leads to large Schottky barriers at the metal-AlGaN interface, resulting in highly resistive ohmic contacts. In this work, we use a reverse compositional graded n++ AlGaN contact layer to achieve upward electron affinity grading, leading to a low specific contact resistance (ρsp) of 1.9 × 10-6 Ω cm2 to n-Al0.75Ga0.25N channels (bandgap ˜5.3 eV) with non-alloyed contacts. We also demonstrate UWBG Al0.75Ga0.25N channel MISFET device operation employing the compositional graded n++ ohmic contact layer and 20 nm atomic layer deposited Al2O3 as the gate-dielectric.

  16. Deconstructing Complexity: Serial Block-Face Electron Microscopic Analysis of the Hippocampal Mossy Fiber Synapse

    PubMed Central

    Wilke, Scott A.; Antonios, Joseph K.; Bushong, Eric A.; Badkoobehi, Ali; Malek, Elmar; Hwang, Minju; Terada, Masako; Ellisman, Mark H.

    2013-01-01

    The hippocampal mossy fiber (MF) terminal is among the largest and most complex synaptic structures in the brain. Our understanding of the development of this morphologically elaborate structure has been limited because of the inability of standard electron microscopy techniques to quickly and accurately reconstruct large volumes of neuropil. Here we use serial block-face electron microscopy (SBEM) to surmount these limitations and investigate the establishment of MF connectivity during mouse postnatal development. Based on volume reconstructions, we find that MF axons initially form bouton-like specializations directly onto dendritic shafts, that dendritic protrusions primarily arise independently of bouton contact sites, and that a dramatic increase in presynaptic and postsynaptic complexity follows the association of MF boutons with CA3 dendritic protrusions. We also identify a transient period of MF bouton filopodial exploration, followed by refinement of sites of synaptic connectivity. These observations enhance our understanding of the development of this highly specialized synapse and illustrate the power of SBEM to resolve details of developing microcircuits at a level not easily attainable with conventional approaches. PMID:23303931

  17. Electronic and optical excitations in building blocks of the metal organic framework MOF-5

    NASA Astrophysics Data System (ADS)

    Shi, Bin; Hung, Linda; Yildirim, Taner; Ogut, Serdar

    Metal organic frameworks (MOFs) are a relatively new class of materials which are made of metal-oxide clusters linked by organic bridging ligands. In recent years, MOFs have received considerable attention due to their widely tunable structural, chemical and physical properties. We investigate one of the well characterized MOFs, MOF-5, whose framework consists of tetrahedral [Zn40]6+ units linked by rigid arylcarboxylate ligands. We use many-body perturbation (GW +BSE) and time-dependent DFT methods in real space to examine the electronic and optical excitations in the building blocks of MOF-5, such as Zn4O(COOH)6, basic zinc acetate [Zn4O(CH3COO)6], and tetranuclear zinc benzoate [Zn4O(C6H5COO)6]. The calculated spectra are compared with available experimental measurements and existing calculations to shed light on the controversy regarding the nature (metal-ligand versus ligand-ligand) of low-energy electronic and optical excitations in MOF-5. Supported by DOE Grant No. DE-SC0001853.

  18. Novel layered two-dimensional semiconductors as the building blocks for nano-electronic/photonic systems

    NASA Astrophysics Data System (ADS)

    Su, Guoxiong; De, Debtanu; Hadjiev, Viktor G.; Peng, Haibing

    2014-06-01

    Layered two-dimensional (2D) semiconductors beyond graphene have been emerging as potential building blocks for the next-generation electronic/photonic applications. Representative metal chalcogenides, including the widely studied MoS2, possess similar layered crystal structures with weak interaction between adjacent layers, thus allowing the formation of stable thin-layer crystals with thickness down to a few or even single atomic layer. Other important chalcogenides, involving earth-abundant and environment-friendly materials desirable for sustainable applications, include SnS2 (band gap: 2.1 eV) and SnS (band gap: 1.1 eV). So far, commonly adopted for research purpose are mechanical and liquid exfoliation methods for creating thin layers of such 2D semiconductors. Most recently, chemical vapor deposition (CVD) was attracting significant attention as a practical method for producing thin films or crystal grains of MoS2. However, critical yet still absent is an effective experimental approach for controlling the positions of thin crystal grains of layered 2D semiconductors during the CVD process. Here we report the controlled CVD synthesis of thin crystal arrays of representative layered semiconductors (including SnS2 and SnS) at designed locations on chip, promising large-scale optoelectronic applications. Our work opens a window for future practical applications of layered 2D semiconductors in integrated nano-electronic/photonic systems.

  19. Serial block face-scanning electron microscopy: a method to study retinal degenerative phenotypes

    PubMed Central

    Mustafi, Debarshi; Kikano, Sandra; Palczewski, Krzysztof

    2014-01-01

    Retinal degenerative conditions can vary in their clinical presentation and often present with subtle phenotypic features before the onset of clinically overt disease. To capture these isolated events that precipitate disease, large representative areas of the retina must be imaged at high resolution. Compared to light microscopic methods, traditional electron microscopy can provide images at sufficient resolution to detect subtle pathologic changes in the retina, but are limited to the area being surveyed. The advent of serial block face-scanning electron microscopy (SBFSEM) provides the resolution needed with the unprecedented advantage of imaging large volumes of retinal tissue. Furthermore, automation of SBF-SEM bypasses errors from manual sectioning and can produce reliable serial sections as thin as 25 nanometers. Moreover, the three-dimensional structures generated can highlight cellular connectivity and interactions in the retina and reveal pathological changes. Using SBF-SEM, we have identified subtle phenotypic features in mouse models of various human retinal dystrophies. This method will allow researchers to identify and monitor the time course of these pathologies. Here, we summarize the SBF-SEM methodology and its application to mouse models of retinal degeneration. PMID:25621191

  20. Molecular beam epitaxy growth of Al-rich AlGaN nanowires for deep ultraviolet optoelectronics

    NASA Astrophysics Data System (ADS)

    Zhao, S.; Woo, S. Y.; Sadaf, S. M.; Wu, Y.; Pofelski, A.; Laleyan, D. A.; Rashid, R. T.; Wang, Y.; Botton, G. A.; Mi, Z.

    2016-08-01

    Self-organized AlGaN nanowires by molecular beam epitaxy have attracted significant attention for deep ultraviolet optoelectronics. However, due to the strong compositional modulations under conventional nitrogen rich growth conditions, emission wavelengths less than 250 nm have remained inaccessible. Here we show that Al-rich AlGaN nanowires with much improved compositional uniformity can be achieved in a new growth paradigm, wherein a precise control on the optical bandgap of ternary AlGaN nanowires can be achieved by varying the substrate temperature. AlGaN nanowire LEDs, with emission wavelengths spanning from 236 to 280 nm, are also demonstrated.

  1. Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency

    SciTech Connect

    Zhang, Zi-Hui; Liu, Wei; Ju, Zhengang; Tiam Tan, Swee; Ji, Yun; Zhang, Xueliang; Wang, Liancheng; Kyaw, Zabu; Wei Sun, Xiao E-mail: volkan@stanfordalumni.org; Volkan Demir, Hilmi E-mail: volkan@stanfordalumni.org

    2014-06-23

    InGaN/GaN light-emitting diodes (LEDs) grown along the [0001] orientation inherit very strong polarization induced electric fields. This results in a reduced effective conduction band barrier height for the p-type AlGaN electron blocking layer (EBL) and makes the electron blocking effect relatively ineffective and the electron injection efficiency drops. Here, we show the concept of polarization self-screening for improving the electron injection efficiency. In this work, the proposed polarization self-screening effect was studied and proven through growing a p-type EBL with AlN composition partially graded along the [0001] orientation, which induces the bulk polarization charges. These bulk polarization charges are utilized to effectively self-screen the positive polarization induced interface charges located at the interface between the EBL and the last quantum barrier when designed properly. Using this approach, the electron leakage is suppressed and the LED performance is enhanced significantly.

  2. Digitally Alloyed Modulated Precursor Flow Epitaxial Growth of Ternary AlGaN with Binary AlN and GaN Sub-Layers and Observation of Compositional Inhomogeneity

    NASA Astrophysics Data System (ADS)

    Kim, Hee Jin; Choi, Suk; Yoo, Dongwon; Ryou, Jae-Hyun; Hawkridge, Michael E.; Liliental-Weber, Zuzanna; Dupuis, Russell D.

    2010-05-01

    We report the growth of ternary aluminum gallium nitride (AlGaN) layers on AlN/sapphire template/substrates by digitally alloyed modulated precursor flow epitaxial growth (DA-MPEG), which combined an MPEG AlN sub-layer with a conventional metalorganic chemical vapor deposition (MOCVD)-grown GaN sub-layer. The overall composition in DA-MPEG Al x Ga1- x N was controlled by adjustment of the growth time (i.e., the thickness) of the GaN sub-layer. As the GaN sub-layer growth time increased, the Al composition in AlGaN decreased to 50%, but the surface morphology of the AlGaN layer became rough, and a three-dimensional structure with islands appeared for the DA-MPEG AlGaN with relatively thick GaN sub-layers, possibly resulting from the Ga adatom surface migration behavior and/or the strain built up from lattice mismatch between AlN and GaN sub-layers with increasing GaN sub-layer growth time. Through strain analysis by high-resolution x-ray diffraction, reciprocal space mapping, and scanning transmission electron microscopy, it was found that there was compositional inhomogeneity in the DA-MPEG AlGaN with AlN and GaN binary sub-layers for the case of the layer with relatively thick GaN sub-layers.

  3. Electrical and optical properties of Fe doped AlGaN grown by molecular beam epitaxy

    SciTech Connect

    Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Kozhukhova, E. A.; Dabiran, A. M.; Chow, P. P.; Wowchak, A. M.; Pearton, S. J.

    2010-01-15

    Electrical and optical properties of AlGaN grown by molecular beam epitaxy were studied in the Al composition range 15%-45%. Undoped films were semi-insulating, with the Fermi level pinned near E{sub c}-0.6-0.7 eV. Si doping to (5-7)x10{sup 17} cm{sup -3} rendered the 15% Al films conducting n-type, but a large portion of the donors were relatively deep (activation energy 95 meV), with a 0.15 eV barrier for capture of electrons giving rise to strong persistent photoconductivity (PPC) effects. The optical threshold of this effect was {approx}1 eV. Doping with Fe to a concentration of {approx}10{sup 17} cm{sup -3} led to decrease in concentration of uncompensated donors, suggesting compensation by Fe acceptors. Addition of Fe strongly suppressed the formation of PPC-active centers in favor of ordinary shallow donors. For higher Al compositions, Si doping of (5-7)x10{sup 17} cm{sup -3} did not lead to n-type conductivity. Fe doping shifted the bandedge luminescence by 25-50 meV depending on Al composition. The dominant defect band in microcathodoluminescence spectra was the blue band near 3 eV, with the energy weakly dependent on composition.

  4. Serial block face scanning electron microscopy for the study of cardiac muscle ultrastructure at nanoscale resolutions.

    PubMed

    Pinali, Christian; Kitmitto, Ashraf

    2014-11-01

    Electron microscopy techniques have made a significant contribution towards understanding muscle physiology since the 1950s. Subsequent advances in hardware and software have led to major breakthroughs in terms of image resolution as well as the ability to generate three-dimensional (3D) data essential for linking structure to function and dysfunction. In this methodological review we consider the application of a relatively new technique, serial block face scanning electron microscopy (SBF-SEM), for the study of cardiac muscle morphology. Employing SBF-SEM we have generated 3D data for cardiac myocytes within the myocardium with a voxel size of ~15 nm in the X-Y plane and 50 nm in the Z-direction. We describe how SBF-SEM can be used in conjunction with selective staining techniques to reveal the 3D cellular organisation and the relationship between the t-tubule (t-t) and sarcoplasmic reticulum (SR) networks. These methods describe how SBF-SEM can be used to provide qualitative data to investigate the organisation of the dyad, a specialised calcium microdomain formed between the t-ts and the junctional portion of the SR (jSR). We further describe how image analysis methods may be applied to interrogate the 3D volumes to provide quantitative data such as the volume of the cell occupied by the t-t and SR membranes and the volumes and surface area of jSR patches. We consider the strengths and weaknesses of the SBF-SEM technique, pitfalls in sample preparation together with tips and methods for image analysis. By providing a 'big picture' view at high resolutions, in comparison to conventional confocal microscopy, SBF-SEM represents a paradigm shift for imaging cellular networks in their native environment.

  5. Serial block face scanning electron microscopy for the study of cardiac muscle ultrastructure at nanoscale resolutions.

    PubMed

    Pinali, Christian; Kitmitto, Ashraf

    2014-11-01

    Electron microscopy techniques have made a significant contribution towards understanding muscle physiology since the 1950s. Subsequent advances in hardware and software have led to major breakthroughs in terms of image resolution as well as the ability to generate three-dimensional (3D) data essential for linking structure to function and dysfunction. In this methodological review we consider the application of a relatively new technique, serial block face scanning electron microscopy (SBF-SEM), for the study of cardiac muscle morphology. Employing SBF-SEM we have generated 3D data for cardiac myocytes within the myocardium with a voxel size of ~15 nm in the X-Y plane and 50 nm in the Z-direction. We describe how SBF-SEM can be used in conjunction with selective staining techniques to reveal the 3D cellular organisation and the relationship between the t-tubule (t-t) and sarcoplasmic reticulum (SR) networks. These methods describe how SBF-SEM can be used to provide qualitative data to investigate the organisation of the dyad, a specialised calcium microdomain formed between the t-ts and the junctional portion of the SR (jSR). We further describe how image analysis methods may be applied to interrogate the 3D volumes to provide quantitative data such as the volume of the cell occupied by the t-t and SR membranes and the volumes and surface area of jSR patches. We consider the strengths and weaknesses of the SBF-SEM technique, pitfalls in sample preparation together with tips and methods for image analysis. By providing a 'big picture' view at high resolutions, in comparison to conventional confocal microscopy, SBF-SEM represents a paradigm shift for imaging cellular networks in their native environment. PMID:25149127

  6. An approach for an advanced anode interfacial layer with electron-blocking ability to achieve high-efficiency organic photovoltaics.

    PubMed

    Yeo, Jun-Seok; Yun, Jin-Mun; Kang, Minji; Khim, Dongyoon; Lee, Seung-Hoon; Kim, Seok-Soon; Na, Seok-In; Kim, Dong-Yu

    2014-11-26

    The interfacial properties of PEDOT:PSS, pristine r-GO, and r-GO with sulfonic acid (SR-GO) in organic photovoltaic are investigated to elucidate electron-blocking property of PEDOT:PSS anode interfacial layer (AIL), and to explore the possibility of r-GO as electron-blocking layers. The SR-GO results in an optimized power conversion efficiency of 7.54% for PTB7-th:PC71BM and 5.64% for P3HT:IC61BA systems. By combining analyses of capacitance-voltage and photovoltaic-parameters dependence on light intensity, it is found that recombination process at SR-GO/active film is minimized. In contrast, the devices using r-GO without sulfonic acid show trap-assisted recombination. The enhanced electron-blocking properties in PEDOT:PSS and SR-GO AILs can be attributed to surface dipoles at AIL/acceptor. Thus, for electron-blocking, the AIL/acceptor interface should be importantly considered in OPVs. Also, by simply introducing sulfonic acid unit on r-GO, excellent contact selectivity can be realized in OPVs.

  7. Comparing electron microscopy and a competitive blocking ELISA in the detection of rotaviruses in porcine faeces.

    PubMed

    Rodák, Ladislav; Smítalová, Radka; Šmíd, Bedřich; Nevoránková, Zora; Valíček, Lubomír; Pšikal, Ivan

    2011-02-01

    Analysis of 476 faecal samples from diarrhoeic piglets was performed using electron microscopy (EM) and a competitive blocking (CB)-ELISA based on monoclonal antibodies to the VP6 protein of group A rotavirus. Rotavirus was detected by EM and/or CB-ELISA in 111 (23.3%) samples. Of these, all groups of rotavirus were identified in 83 (74.8%) samples by EM (EM+), while group A rotavirus was identified in 90 (81.1%) samples by CB-ELISA (ELISA+). However, only 62 (55.9%) of samples were positive using both detection methods. The finding of 28 (25.2%) EM-/CB-ELISA+ samples illustrated the high sensitivity of the CB-ELISA method. On PCR analysis, groups B and C rotavirus was found in 3 and 16 of 19 EM+/CB-ELISA- samples, respectively. Although the study illustrates the high sensitivity of a CB-ELISA in rotavirus detection, the findings highlight the need to use a range of diagnostic methods in detecting these viruses in clinical samples.

  8. Ultraflat Au nanoplates as a new building block for molecular electronics

    NASA Astrophysics Data System (ADS)

    Jeong, Wooseok; Lee, Miyeon; Lee, Hyunsoo; Lee, Hyoban; Kim, Bongsoo; Park, Jeong Young

    2016-05-01

    We demonstrate the charge transport properties of a self-assembled organic monolayer on Au nanoplates with conductive probe atomic force microscopy (CP-AFM). Atomically flat Au nanoplates, a few hundred micrometers on each side, that have only (111) surfaces, were synthesized using the chemical vapor transport method; these nanoplates were employed as the substrates for hexadecanethiol (HDT) self-assembled monolayers (SAMs). Atomic-scale high-resolution images show (\\sqrt{3}× \\sqrt{3}){{R}}30^\\circ molecular periodicity, indicating a well-ordered structure of the HDT on the Au nanoplates. We observed reduced friction and adhesion forces on the HDT SAMs on Au nanoplates, compared with Si substrates, which is consistent with the lubricating nature of HDT SAMs. The electrical properties, such as I–V characteristics and current as a function of load, were measured using CP-AFM. We obtained a tunneling decay constant (β) of 0.57 Å‑1, including through-bond ({β }{tb} = 0.99 Å‑1) and through-space ({β }{{ts}} = 1.36 Å‑1) decay constants for the two-pathway model. This indicates that the charge transport properties of HDT SAMs on Au nanoplates are consistent with those on a Au (111) film, suggesting that SAMs on nanoplates can provide a new building block for molecular electronics.

  9. Phosphine Oxide Based Electron Transporting and Hole Blocking Materials for Blue Electrophosphorescent Organic Light Emitting Devices

    SciTech Connect

    Von Ruden, Amber L.; Cosimbescu, Lelia; Polikarpov, Evgueni; Koech, Phillip K.; Swensen, James S.; Wang, Liang; Darsell, Jens T.; Padmaperuma, Asanga B.

    2010-10-26

    We report the design, synthesis, thermal, and photophysical properties of two phosphine oxide based electron transport/hole blocking materials, 2,6-bis(4-(diphenylphosphoryl)phenyl)pyridine (BM-A11) and 2,4-bis(4-(diphenyl-phosphoryl)phenyl)pyridine (BM-A10) for blue electrophosphorescent organic light emitting devices (OLEDs). The use of these materials in blue OLED with iridium (III) bis[(4,6-difluorophenyl)-pyridinato-N,C2’]picolinate (Firpic) as the phosphor was demonstrated. Using the dual host device architecture with BM-A10 as the ETM yields a maximum EQE of 8.9% with a power efficiency of 21.5 lm/W (4.0V and 35 cd/m2). When BM-A11 is used as the ETM, the maximum EQE and power efficiency improves to 14.9% and 48.4 lm/W, respectively (3.0V and 40 cd/m2).

  10. Building blocks of an artificial kagome spin ice: Photoemission electron microscopy of arrays of ferromagnetic islands

    NASA Astrophysics Data System (ADS)

    Mengotti, E.; Heyderman, L. J.; Fraile Rodríguez, A.; Bisig, A.; Le Guyader, L.; Nolting, F.; Braun, H. B.

    2008-10-01

    Arrays of dipolar coupled ferromagnetic islands arranged in specific geometries provide ideal systems to directly study frustration. We have examined with photoemission electron microscopy the magnetic configurations in three basic building blocks of an artificial kagome spin ice consisting of one, two, and three rings. The kagome spin ice arrangement is particularly interesting because it is highly frustrated and the three interactions at a vertex are equivalent. Employing dipolar energy calculations, we are able to make a full characterization of the magnetic states and therefore identify the lowest energy states. Experimentally we find that the ice rule is always obeyed even at low dipolar coupling strengths. However, as the number of rings increases there is a drastic decrease in the ability to achieve the low-energy states via demagnetization, a behavior also identified in the magnetization reversal. This carries the implication that the ground state will never be achieved in the infinite system. Finally, we show that at low coupling, the applied field direction governs the resulting states. This work opens the door to a novel class of systems for future spintronic applications.

  11. Kalkitoxin Inhibits Angiogenesis, Disrupts Cellular Hypoxic Signaling, and Blocks Mitochondrial Electron Transport in Tumor Cells

    PubMed Central

    Morgan, J. Brian; Liu, Yang; Coothankandaswamy, Veena; Mahdi, Fakhri; Jekabsons, Mika B.; Gerwick, William H.; Valeriote, Frederick A.; Zhou, Yu-Dong; Nagle, Dale G.

    2015-01-01

    The biologically active lipopeptide kalkitoxin was previously isolated from the marine cyanobacterium Moorea producens (Lyngbya majuscula). Kalkitoxin exhibited N-methyl-d-aspartate (NMDA)-mediated neurotoxicity and acted as an inhibitory ligand for voltage-sensitive sodium channels in cultured rat cerebellar granule neurons. Subsequent studies revealed that kalkitoxin generated a delayed form of colon tumor cell cytotoxicity in 7-day clonogenic cell survival assays. Cell line- and exposure time-dependent cytostatic/cytotoxic effects were previously observed with mitochondria-targeted inhibitors of hypoxia-inducible factor-1 (HIF-1). The transcription factor HIF-1 functions as a key regulator of oxygen homeostasis. Therefore, we investigated the ability of kalkitoxin to inhibit hypoxic signaling in human tumor cell lines. Kalkitoxin potently and selectively inhibited hypoxia-induced activation of HIF-1 in T47D breast tumor cells (IC50 5.6 nM). Mechanistic studies revealed that kalkitoxin inhibits HIF-1 activation by suppressing mitochondrial oxygen consumption at electron transport chain (ETC) complex I (NADH-ubiquinone oxidoreductase). Further studies indicate that kalkitoxin targets tumor angiogenesis by blocking the induction of angiogenic factors (i.e., VEGF) in tumor cells. PMID:25803180

  12. Catalytic activity of enzymes immobilized on AlGaN /GaN solution gate field-effect transistors

    NASA Astrophysics Data System (ADS)

    Baur, B.; Howgate, J.; von Ribbeck, H.-G.; Gawlina, Y.; Bandalo, V.; Steinhoff, G.; Stutzmann, M.; Eickhoff, M.

    2006-10-01

    Enzyme-modified field-effect transistors (EnFETs) were prepared by immobilization of penicillinase on AlGaN /GaN solution gate field-effect transistors. The influence of the immobilization process on enzyme functionality was analyzed by comparing covalent immobilization and physisorption. Covalent immobilization by Schiff base formation on GaN surfaces modified with an aminopropyltriethoxysilane monolayer exhibits high reproducibility with respect to the enzyme/substrate affinity. Reductive amination of the Schiff base bonds to secondary amines significantly increases the stability of the enzyme layer. Electronic characterization of the EnFET response to penicillin G indicates that covalent immobilization leads to the formation of an enzyme (sub)monolayer.

  13. Deep traps responsible for hysteresis in capacitance-voltage characteristics of AlGaN /GaN heterostructure transistors

    NASA Astrophysics Data System (ADS)

    Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Markov, A. V.; Dabiran, A. M.; Wowchak, A. M.; Osinsky, A. V.; Cui, B.; Chow, P. P.; Pearton, S. J.

    2007-12-01

    The origin of hysteresis in capacitance-voltage (C-V) characteristics was studied for Schottky diodes prepared on AlGaN /GaN transistor structures with GaN (Fe) buffers. The application of reverse bias leads to a shift of C-V curves toward higher positive voltages. The magnitude of the effect is shown to increase for lower temperatures. The phenomenon is attributed to tunneling of electrons from the Schottky gate to localized states in the structure. A technique labeled "reverse" deep level transient spectroscopy was used to show that the deep traps responsible for the hysteresis have activation energies of 0.25, 0.6, and 0.9eV. Comparison with deep trap spectra of GaN buffers and Si doped n-GaN films prepared on GaN buffers suggests that the traps in question are located in the buffer layer.

  14. An Electron-Deficient Building Block Based on the B←N Unit: An Electron Acceptor for All-Polymer Solar Cells.

    PubMed

    Dou, Chuandong; Long, Xiaojing; Ding, Zicheng; Xie, Zhiyuan; Liu, Jun; Wang, Lixiang

    2016-01-22

    A double B←N bridged bipyridyl (BNBP) is a novel electron-deficient building block for polymer electron acceptors in all-polymer solar cells. The B←N bridging units endow BNBP with fixed planar configuration and low-lying LUMO/HOMO energy levels. As a result, the polymer based on BNBP units (P-BNBP-T) exhibits high electron mobility, low-lying LUMO/HOMO energy levels, and strong absorbance in the visible region, which is desirable for polymer electron acceptors. Preliminary all-polymer solar cell (all-PSC) devices with P-BNBP-T as the electron acceptor and PTB7 as the electron donor exhibit a power conversion efficiency (PCE) of 3.38%, which is among the highest values of all-PSCs with PTB7 as the electron donor.

  15. An Electron-Deficient Building Block Based on the B←N Unit: An Electron Acceptor for All-Polymer Solar Cells.

    PubMed

    Dou, Chuandong; Long, Xiaojing; Ding, Zicheng; Xie, Zhiyuan; Liu, Jun; Wang, Lixiang

    2016-01-22

    A double B←N bridged bipyridyl (BNBP) is a novel electron-deficient building block for polymer electron acceptors in all-polymer solar cells. The B←N bridging units endow BNBP with fixed planar configuration and low-lying LUMO/HOMO energy levels. As a result, the polymer based on BNBP units (P-BNBP-T) exhibits high electron mobility, low-lying LUMO/HOMO energy levels, and strong absorbance in the visible region, which is desirable for polymer electron acceptors. Preliminary all-polymer solar cell (all-PSC) devices with P-BNBP-T as the electron acceptor and PTB7 as the electron donor exhibit a power conversion efficiency (PCE) of 3.38%, which is among the highest values of all-PSCs with PTB7 as the electron donor. PMID:26663513

  16. Piezoelectric domains in the AlGaN hexagonal microrods: Effect of crystal orientations

    NASA Astrophysics Data System (ADS)

    Sivadasan, A. K.; Mangamma, G.; Bera, Santanu; Kamruddin, M.; Dhara, Sandip

    2016-05-01

    Presently, the piezoelectric materials are finding tremendous applications in the micro-mechanical actuators, sensors, and self-powered devices. In this context, the studies pertaining to piezoelectric properties of materials in the different size ranges are very important for the scientific community. The III-nitrides are exceptionally important, not only for optoelectronic but also for their piezoelectric applications. In the present study, we synthesized AlGaN via self-catalytic vapor-solid mechanism by atmospheric pressure chemical vapor deposition technique on AlN base layer over intrinsic Si(100) substrate. The growth process is substantiated using X-ray diffraction and X-ray photoelectron spectroscopy. The Raman and photoluminescence studies reveal the formation of AlGaN microrods in the wurtzite phase and ensure the high optical quality of the crystalline material. The single crystalline, direct wide band gap and hexagonally shaped AlGaN microrods are studied for understanding the behavior of the crystallites under the application of constant external electric field using the piezoresponse force microscopy. The present study is mainly focused on understanding the behavior of induced polarization for the determination of piezoelectric coefficient of AlGaN microrod along the c-axis and imaging of piezoelectric domains in the sample originating because of the angular inclination of AlGaN microrods with respect to its AlN base layers.

  17. Staining plastic blocks with triiodide to image cells and soft tissues in backscattered electron SEM of skeletal and dental tissues.

    PubMed

    Boyde, A

    2012-01-01

    Backscattered electron scanning electron microscopy (BSE SEM) is an invaluable method for studying the histology of the hard, mineralised components of poly-methyl methacrylate (PMMA) or other resin embedded skeletal and dental tissues. Intact tissues are studied in micro-milled or polished block faces with an electron-optical section thickness of the order of a half to one micron and with the area of the section as big as a whole--large or small--bone organ. However, BSE SEM does not give information concerning the distribution of uncalcified, 'soft', cellular and extracellular matrix components. This can be obtained by confocal microscopy of the same block and the two sorts of images merged but the blocks have to be studied in two microscope systems. The present work shows a new, simple and economic approach to visualising both components by using the triiodide ion in Lugol's iodine solution to stain the block surface prior to the application of any conductive coating--and the latter can be omitted if charging is suppressed by use of poor vacuum conditions in the SEM sample chamber. The method permits the use of archival tissue, and it will be valuable in studies of both normal growth and development and pathological changes in bones and joints, including osteoporosis and osteoarthritis, and tissue adaptation to implants. PMID:22828992

  18. A Novel Method of Island Blocking in Whole Abdominal Radiotherapy Using a Modified Electronic Tissue Compensation Technique

    SciTech Connect

    Goyal, Sharad

    2010-10-01

    Traditionally, large fields requiring island blocking used external beam radiation therapy (EBRT) with Cerrobend blocks to limit dose to the critical structures. It is laborious to construct blocks and use them on a daily basis. We present a novel technique for island blocking using a modified electronic tissue compensation (MECOMP) technique. Five patients treated at our institution were selected for this study. The study compared two planning techniques: a novel MECOMP and a conventional EBRT technique. Conventional fields were defined using anterior-posterior and posterior-anterior (PA) fields. The kidneys were contoured and an aperture cut-out block was fitted to the OAR with a 1-cm margin (OAR{sub CTV}) and placed in the PA field. A dynamic multileaf collimation (DMLC) plan with ECOMP was developed using identical beam and blocking strategy; this tissue compensation-based fluence map was modified to deliver a 'zero' dose to the CTV{sub OAR} from the PA field. There were no significant differences in the mean, maximum, and minimum doses to the right or left kidney between the two methods. The mean, maximum, and minimum doses to the peritoneal cavity were also not significantly different. The number of monitor units (MUs) required was increased using the MECOMP (273 vs. 1152, p < 0.01). The MECOMP is effectively able to deliver DMLC-based radiotherapy, even with island blocks present. This novel use of MECOMP for whole abdominal radiotherapy should substantially reduce the labor, daily treatment time, and treatment-related errors through the elimination of cerrobend blocks.

  19. An Electronic Structure Approach to Charge Transfer and Transport in Molecular Building Blocks for Organic Optoelectronics

    NASA Astrophysics Data System (ADS)

    Hendrickson, Heidi Phillips

    A fundamental understanding of charge separation in organic materials is necessary for the rational design of optoelectronic devices suited for renewable energy applications and requires a combination of theoretical, computational, and experimental methods. Density functional theory (DFT) and time-dependent (TD)DFT are cost effective ab-initio approaches for calculating fundamental properties of large molecular systems, however conventional DFT methods have been known to fail in accurately characterizing frontier orbital gaps and charge transfer states in molecular systems. In this dissertation, these shortcomings are addressed by implementing an optimally-tuned range-separated hybrid (OT-RSH) functional approach within DFT and TDDFT. The first part of this thesis presents the way in which RSH-DFT addresses the shortcomings in conventional DFT. Environmentally-corrected RSH-DFT frontier orbital energies are shown to correspond to thin film measurements for a set of organic semiconducting molecules. Likewise, the improved RSH-TDDFT description of charge transfer excitations is benchmarked using a model ethene dimer and silsesquioxane molecules. In the second part of this thesis, RSH-DFT is applied to chromophore-functionalized silsesquioxanes, which are currently investigated as candidates for building blocks in optoelectronic applications. RSH-DFT provides insight into the nature of absorptive and emissive states in silsesquioxanes. While absorption primarily involves transitions localized on one chromophore, charge transfer between chromophores and between chromophore and silsesquioxane cage have been identified. The RSH-DFT approach, including a protocol accounting for complex environmental effects on charge transfer energies, was tested and validated against experimental measurements. The third part of this thesis addresses quantum transport through nano-scale junctions. The ability to quantify a molecular junction via spectroscopic methods is crucial to their

  20. An analysis of temperature dependent piezoelectric Franz-Keldysh effect in AlGaN

    NASA Astrophysics Data System (ADS)

    Hou, Y. T.; Teo, K. L.; Li, M. F.; Uchida, Kazuo; Tokunaga, Hiroki; Akutsu, Nakao; Matsumoto, Koh

    2000-02-01

    Strong Franz-Keldysh oscillations near the band gap of AlGaN are observed in the contactless electroreflectance (CER) studies of a GaN/InGaN/AlGaN multilayer structure. The line shape analysis of the CER spectra at different temperatures provides an accurate determination of the AlGaN band gap energies and the built-in electric fields. Using the existing data of the thermal expansion coefficients of GaN and sapphire, and the piezoelectric constants of AlGaN, the temperature dependence of the electric field is estimated and is in good agreement with the experimental results between 15 and 300 K. We attribute such electric field to the piezoelectric strain effect.

  1. Investigation of the thickness effect to impedance analysis results AlGaN acoustic sensor

    NASA Astrophysics Data System (ADS)

    Özen, Soner; Bilgiç, Eyüp; Gülmez, Gülay; Şenay, Volkan; Pat, Suat; Korkmaz, Şadan; Mohammadigharehbagh, Reza

    2016-03-01

    In this study, AlGaN acoustic sensors were deposited on aluminum metal substrate by thermionic vacuum arc (TVA) method, for the first time. Impedance analyses of the fabricated acoustic sensors were investigated for the determining of effect of the nano layer thickness. Thickness values are very close to each others. Fabricated sensors have been fabricated from AlGaN deposited on aluminum substrates. Gallium materials are used in many applications for optoelectronic device and semiconductor technology. Thermionic vacuum arc is the deposition technology for the variously materials and applications field. TVA production parameters and some properties of the deposited layers were investigated. TVA is the fast deposition technology for the gallium compounds and doped gallium compounds. Obtained results that AlGaN layer are very promising material for an acoustic sensor but also TVA is proper fast technology for the production.

  2. The effect of multifunctional monomers/oligomers Additives on electron beam radiation crosslinking of poly (styrene-block-isoprene/butadiene-block-styrene) (SIBS)

    NASA Astrophysics Data System (ADS)

    Wu, Jinping; Soucek, Mark D.

    2016-02-01

    The effect of multifunctional monomers or oligomers (MFM/O) additives on electron beam (E-beam) radiation induced crosslinking of poly (styrene-block-isoprene/butadiene-block-styrene) (SIBS) was studied. Ten types of MFM/O were investigated, including trimethylolpropane trimethacrylate (TMPTMA), trimethylolpropane triacrylate (TMPTA), triallyl cyanurate (TAC), polybutadiene diacrylate (PB-diacrylate), ethylene glycol dimethylacrylate (EGDMA), butylene glycol dimethacrylate (BGDMA), 1,2-polybutadiene. The effects of MFM/O concentration and E-beam radiation dose on properties of SIBS were studied including tensile strength, elongation-at-break, modulus, gel content, equilibrium swelling and crosslink density. TMPTA significantly improved the tensile modulus and crosslink density of SIBS. SIBS with TMPTMA and TMTPMA with inhibitor showed a 50% increase in tensile strength. The solubility of MFM/O in SIBS was also investigated by a selective swelling method. The MFM/O were found to be soluble in both phases of SIBS. The viscosity of SIBS with methacrylate type MFM/O was stable at 200 °C.

  3. AlGaN Channel Transistors for Power Management and Distribution

    NASA Technical Reports Server (NTRS)

    VanHove, James M.

    1996-01-01

    Contained within is the Final report of a Phase 1 SBIR program to develop AlGaN channel junction field effect transistors (JFET). The report summarizes our work to design, deposit, and fabricate JFETS using molecular beam epitaxy growth AlGaN. Nitride growth is described using a RF atomic nitrogen plasma source. Processing steps needed to fabricate the device such as ohmic source-drain contacts, reactive ion etching, gate formation, and air bride fabrication are documented. SEM photographs of fabricated power FETS are shown. Recommendations are made to continue the effort in a Phase 2 Program.

  4. Large-Format AlGaN PIN Photodiode Arrays for UV Images

    NASA Technical Reports Server (NTRS)

    Aslam, Shahid; Franz, David

    2010-01-01

    A large-format hybridized AlGaN photodiode array with an adjustable bandwidth features stray-light control, ultralow dark-current noise to reduce cooling requirements, and much higher radiation tolerance than previous technologies. This technology reduces the size, mass, power, and cost of future ultraviolet (UV) detection instruments by using lightweight, low-voltage AlGaN detectors in a hybrid detector/multiplexer configuration. The solar-blind feature eliminates the need for additional visible light rejection and reduces the sensitivity of the system to stray light that can contaminate observations.

  5. Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240–350 nm emission

    SciTech Connect

    Himwas, C.; Hertog, M. den; Dang, Le Si; Songmuang, R.; Monroy, E.

    2014-12-15

    We present structural and optical studies of AlGaN sections and AlGaN/AlN nanodisks (NDs) in nanowires grown by plasma-assisted molecular beam epitaxy. The Al-Ga intermixing at Al(Ga)N/GaN interfaces and the chemical inhomogeneity in AlGaN NDs evidenced by scanning transmission electron microscopy are attributed to the strain relaxation process. This interpretation is supported by the three-dimensional strain distribution calculated by minimizing the elastic energy in the structure. The alloy inhomogeneity increases with the Al content, leading to enhanced carrier localization signatures in the luminescence characteristics, i.e., red shift of the emission, s-shaped temperature dependence, and linewidth broadening. Despite these effects, the emission energy of AlGaN/AlN NDs can be tuned in the 240–350 nm range with internal quantum efficiencies around 30%.

  6. Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double electron blocking layers

    NASA Astrophysics Data System (ADS)

    Cheng, Zhang; Sun, Hui-Qing; Xu-Na, Li; Hao, Sun; Xuan-Cong, Fan; Zhu-Ding, Zhang; Zhi-You, Guo

    2016-02-01

    The AlGaN-based deep ultraviolet light-emitting diodes (LED) with double electron blocking layers (d-EBLs) on both sides of the active region are investigated theoretically. They possess many excellent performances compared with the conventional structure with only a single electron blocking layer, such as a higher recombination rate, improved light output power and internal quantum efficiency (IQE). The reasons can be concluded as follows. On the one hand, the weakened electrostatic field within the quantum wells (QWs) enhances the electron-hole spatial overlap in QWs, and therefore increases the probability of radioactive recombination. On the other hand, the added n-AlGaN layer can not only prevent holes from overflowing into the n-side region but also act as another electron source, providing more electrons. Project supported by the Special Strategic Emerging Industries of Guangdong Province, China (Grant No. 2012A080304006), the Major Scientific and Technological Projects of Zhongshan City, Guangdong Province, China (Grant No. 2014A2FC204), and the Forefront of Technology Innovation and Key Technology Projects of Guangdong Province, China (Grant Nos. 2014B010121001 and 2014B010119004).

  7. Effect of stress on the Al composition evolution in AlGaN grown using metal organic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    He, Chenguang; Qin, Zhixin; Xu, Fujun; Zhang, Lisheng; Wang, Jiaming; Hou, Mengjun; Zhang, Shan; Wang, Xinqiang; Ge, Weikun; Shen, Bo

    2016-05-01

    Two series of AlGaN samples with different stresses were designed to investigate the effect of stress on the Al composition. X-ray diffraction reciprocal space mapping (XRD RSM) demonstrated that the AlGaN epilayers with different stresses have large Al composition differences despite the same growth conditions. The largest Al composition difference reached up to 21.3%, which was also confirmed using secondary ion mass spectroscopy (SIMS). This result is attributed to a large stress discrepancy in the AlGaN epilayers. Finally, the dependences of the solid-phase Al composition on the gas-phase Al composition under different stresses were systematically analyzed.

  8. A Small Molecule That Protects the Integrity of the Electron Transfer Chain Blocks the Mitochondrial Apoptotic Pathway.

    PubMed

    Jiang, Xian; Li, Li; Ying, Zhengxin; Pan, Chenjie; Huang, Shaoqiang; Li, Lin; Dai, Miaomiao; Yan, Bo; Li, Ming; Jiang, Hui; Chen, She; Zhang, Zhiyuan; Wang, Xiaodong

    2016-07-21

    In response to apoptotic stimuli, mitochondria in mammalian cells release cytochrome c and other apoptogenic proteins, leading to the subsequent activation of caspases and apoptotic cell death. This process is promoted by the pro-apoptotic members of the Bcl-2 family of proteins, such as Bim and Bax, which, respectively, initiate and execute cytochrome c release from the mitochondria. Here we report the discovery of a small molecule that efficiently blocks Bim-induced apoptosis after Bax is activated on the mitochondria. The cellular target of this small molecule was identified to be the succinate dehydrogenase subunit B (SDHB) protein of complex II of the mitochondrial electron transfer chain (ETC). The molecule protects the integrity of the ETC and allows treated cells to continue to proliferate after apoptosis induction. Moreover, this molecule blocked dopaminergic neuron death and reversed Parkinson-like behavior in a rat model of Parkinson's disease. PMID:27447985

  9. Inhomogeneous distribution of defect-related emission in Si-doped AlGaN epitaxial layers with different Al content and Si concentration

    SciTech Connect

    Kurai, Satoshi Ushijima, Fumitaka; Yamada, Yoichi; Miyake, Hideto; Hiramatsu, Kazumasa

    2014-02-07

    The spatial distribution of luminescence in Si-doped AlGaN epitaxial layers that differ in Al content and Si concentration has been studied by cathodoluminescence (CL) mapping in combination with scanning electron microscopy. The density of surface hillocks increased with decreasing Al content and with increasing Si concentration. The mechanisms giving rise to those hillocks are likely different. The hillocks induced surface roughening, and the compositional fluctuation and local donor-acceptor-pair (DAP) emission at hillock edges in AlGaN epitaxial layers were enhanced irrespective of the origin of the hillocks. The intensity of local DAP emission was related to Si concentration, as well as to hillock density. CL observation revealed that DAP emission areas were present inside the samples and were likely related to dislocations concentrated at hillock edges. Possible candidates for acceptors in the observed DAP emission that are closely related in terms of both Si concentration and hillock edges with large deformations are a V{sub III}-Si{sub III} complex and Si{sub N}, which are unfavorable in ordinary III-nitrides.

  10. Persistent photoconductivity in AlGaN/GaN heterojunction channels caused by the ionization of deep levels in the AlGaN barrier layer

    SciTech Connect

    Murayama, H.; Akiyama, Y.; Niwa, R.; Sakashita, H.; Sakaki, H.; Kachi, T.; Sugimoto, M.

    2013-12-04

    Time-dependent responses of drain current (I{sub d}) in an AlGaN/GaN HEMT under UV (3.3 eV) and red (2.0 eV) light illumination have been studied at 300 K and 250 K. UV illumination enhances I{sub d} by about 10 %, indicating that the density of two-dimensional electrons is raised by about 10{sup 12} cm{sup −2}. When UV light is turned off at 300 K, a part of increased I{sub d} decays quickly but the other part of increment is persistent, showing a slow decay. At 250 K, the majority of increment remains persistent. It is found that such a persistent increase of I{sub d} at 250 K can be partially erased by the illumination of red light. These photo-responses are explained by a simple band-bending model in which deep levels in the AlGaN barrier get positively charged by the UV light, resulting in a parabolic band bending in the AlGaN layer, while some potion of those deep levels are neutralized by the red light.

  11. Molecular beam epitaxial growth and characterization of Al(Ga)N nanowire deep ultraviolet light emitting diodes and lasers

    NASA Astrophysics Data System (ADS)

    Mi, Z.; Zhao, S.; Woo, S. Y.; Bugnet, M.; Djavid, M.; Liu, X.; Kang, J.; Kong, X.; Ji, W.; Guo, H.; Liu, Z.; Botton, G. A.

    2016-09-01

    We report on the detailed molecular beam epitaxial growth and characterization of Al(Ga)N nanowire heterostructures on Si and their applications for deep ultraviolet light emitting diodes and lasers. The nanowires are formed under nitrogen-rich conditions without using any metal catalyst. Compared to conventional epilayers, Mg-dopant incorporation is significantly enhanced in nearly strain- and defect-free Al(Ga)N nanowire structures, leading to efficient p-type conduction. The resulting Al(Ga)N nanowire LEDs exhibit excellent performance, including a turn-on voltage of ∼5.5 V for an AlN nanowire LED operating at 207 nm. The design, fabrication, and performance of an electrically injected AlGaN nanowire laser operating in the UV-B band is also presented.

  12. Growth and characterization of graded AlGaN conducting buffer layers on n + SiC substrates

    NASA Astrophysics Data System (ADS)

    Moran, B.; Hansen, M.; Craven, M. D.; Speck, J. S.; DenBaars, S. P.

    2000-12-01

    GaN films on top of doped, graded AlGaN conducting buffer layers were grown by metal-organic chemical vapor deposition on n + SiC substrates. The effect of initial AlGaN composition and buffer layer doping level on the structural and morphological properties of these films and the conduction between these films and the substrate was investigated. A minimum resistance of 2 Ω was measured for vertical test structures.

  13. Conductivity of styrene-butadiene block copolymers upon continuous irradiation with fast electrons

    SciTech Connect

    Khatipov, S.A.; Edrisov, A.T.; Bol`bit, N.M.; Milinchuk, V.K.

    1995-03-01

    The time dependences of the density of radiation-induced current in polystyrene, polybutadiene, and styrene-butadiene block copolymers of various composition were studied upon varying the electric field strength and radiation dose rate. Significant deviations of the values of the radiation-induced conductivity constant A{sub m} and dispersion parameter {alpha} from those expected for additive contributions of each component into the radiation-induced conductivity were revealed. Conclusions on the charge carriers generated during irradiation transfer from polybutadiene to polystyrene microdomains were drawn.

  14. Op-Amps as Building Blocks in an Undergraduate Project-Type Electronics Lab

    ERIC Educational Resources Information Center

    Babcock, L. E.; Vignos, J. H.

    1973-01-01

    Describes a project-type undergraduate laboratory in electronics which utilizes integrated circuit operational amplifiers. Includes a brief account of ideal and nonideal operational amplifiers and a detailed description of the projects. (DF)

  15. The influence of electron beam irradiation on the mechanical and thermal properties of Poly (ether-block-amide) blends

    NASA Astrophysics Data System (ADS)

    Murray, Kieran A.; Kennedy, James E.; McEvoy, Brian; Vrain, Olivier; Ryan, Damien; Cowman, Richard; Higginbotham, Clement L.

    2014-01-01

    High energy electron beam irradiation of Poly (ether-block-amide) (Pebax) can induce modifications and/or degradation to transpire in the material subsequent to treatment. To minimise this, Pebax was blended with three stabilisers where each formulation was subjected to electron beam radiation at doses of 25, 50 and 75 kGy. Mechanical testing revealed that the virgin Pebax and the Pebax blended with Irganox B215 provided the best radiation resistance in terms of the tensile strength, elongation at break and Young's modulus. Upon increase in radiation dose from 25 to 75 kGy, a gradual diminution was observed for the melt flow index (MFI) of the virgin Pebax, whereas Pebax blended with Irganox B215 had a minute effect on the properties post irradiation. This study provides evidence that the stabilisers used can either promote undesirable effects or enhance the radiation resistance of Pebax material following radiation exposure.

  16. Electron Transfer within Self-Assembling Cyclic Tetramers Using Chlorophyll-Based Donor-Acceptor Building Blocks

    SciTech Connect

    Gunderson, Victoria L; Smeigh, Amanda L; Kim, Chul Hoon; Co, Dick T; Wasielewski, Michael R

    2012-05-09

    The synthesis and photoinduced charge transfer properties of a series of Chl-based donor-acceptor triad building blocks that self-assemble into cyclic tetramers are reported. Chlorophyll a was converted into zinc methyl 3-ethylpyrochlorophyllide a (Chl) and then further modified at its 20-position to covalently attach a pyromellitimide (PI) acceptor bearing a pyridine ligand and one or two naphthalene-1,8:4,5-bis(dicarboximide) (NDI) secondary electron acceptors to give Chl-PI-NDI and Chl-PI-NDI2. The pyridine ligand within each ambident triad enables intermolecular Chl metal-ligand coordination in dry toluene, which results in the formation of cyclic tetramers in solution, as determined using small- and wide-angle X-ray scattering at a synchrotron source. Femtosecond and nanosecond transient absorption spectroscopy of the monomers in toluene-1% pyridine and the cyclic tetramers in toluene shows that the selective photoexcitation of Chl results in intramolecular electron transfer from 1*Chl to PI to form Chl+.-PI-.-NDI and Chl+.-PI-.-NDI2. This initial charge separation is followed by a rapid charge shift from PI-. to NDI and subsequent charge recombination of Chl+.-PI-NDI-. and Chl+.-PI-(NDI)NDI-. on a 5-30 ns time scale. Charge recombination in the Chl-PI-NDI2 cyclic tetramer (τCR = 30 ± 1 ns in toluene) is slower by a factor of 3 relative to the monomeric building blocks (τCR = 10 ± 1 ns in toluene-1% pyridine). This indicates that the self-assembly of these building blocks into the cyclic tetramers alters their structures in a way that lengthens their charge separation lifetimes, which is an advantageous strategy for artificial photosynthetic systems.

  17. Statistical nanoscale study of localised radiative transitions in GaN/AlGaN quantum wells and AlGaN epitaxial layers

    NASA Astrophysics Data System (ADS)

    Rigutti, L.; Mancini, L.; Lefebvre, W.; Houard, J.; Hernàndez-Maldonado, D.; Di Russo, E.; Giraud, E.; Butté, R.; Carlin, J.-F.; Grandjean, N.; Blavette, D.; Vurpillot, F.

    2016-09-01

    Compositional disorder has important consequences on the optical properties of III-nitride ternary alloys. In AlGaN epilayers and AlGaN-based quantum heterostructures, the potential fluctuations induced by such disorder lead to the localisation of carriers at low temperature, which affects their transition energies. Using the correlations between micro-photoluminescence, scanning transmission electron microscopy and atom probe tomography we have analysed the optical behaviour of Al0.25Ga0.75N epilayers and that of GaN/AlGaN quantum wells, and reconstructed in three dimensions the distribution of chemical species with sub-nanometre spatial resolution. These composition maps served as the basis for the effective mass calculation of electrons and holes involved in radiative transitions. Good statistical predictions were subsequently obtained for the above-mentioned transition and localisation energies by establishing a link with their microstructural properties.

  18. On the redox origin of surface trapping in AlGaN/GaN high electron mobility transistors

    SciTech Connect

    Gao, Feng; Chen, Di; Tuller, Harry L.; Thompson, Carl V.; Palacios, Tomás

    2014-03-28

    Water-related redox couples in ambient air are identified as an important source of the surface trapping states, dynamic on-resistance, and drain current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). Through in-situ X-ray photoelectron spectroscopy (XPS), direct signature of the water-related species—hydroxyl groups (OH) was found at the AlGaN surface at room temperature. It was also found that these species, as well as the current collapse, can be thermally removed above 200 °C in vacuum conditions. An electron trapping mechanism based on the H{sub 2}O/H{sub 2} and H{sub 2}O/O{sub 2} redox couples is proposed to explain the 0.5 eV energy level commonly attributed to the surface trapping states. Finally, the role of silicon nitride passivation in successfully removing current collapse in these devices is explained by blocking the water molecules away from the AlGaN surface.

  19. Calculation of electronic coupling matrix elements for ground and excited state electron transfer reactions: Comparison of the generalized Mulliken-Hush and block diagonalization methods

    NASA Astrophysics Data System (ADS)

    Cave, Robert J.; Newton, Marshall D.

    1997-06-01

    Two independent methods are presented for the nonperturbative calculation of the electronic coupling matrix element (Hab) for electron transfer reactions using ab initio electronic structure theory. The first is based on the generalized Mulliken-Hush (GMH) model, a multistate generalization of the Mulliken Hush formalism for the electronic coupling. The second is based on the block diagonalization (BD) approach of Cederbaum, Domcke, and co-workers. Detailed quantitative comparisons of the two methods are carried out based on results for (a) several states of the system Zn2OH2+ and (b) the low-lying states of the benzene-Cl atom complex and its contact ion pair. Generally good agreement between the two methods is obtained over a range of geometries. Either method can be applied at an arbitrary nuclear geometry and, as a result, may be used to test the validity of the Condon approximation. Examples of nonmonotonic behavior of the electronic coupling as a function of nuclear coordinates are observed for Zn2OH2+. Both methods also yield a natural definition of the effective distance (rDA) between donor (D) and acceptor (A) sites, in contrast to earlier approaches which required independent estimates of rDA, generally based on molecular structure data.

  20. Native cation vacancies in Si-doped AlGaN studied by monoenergetic positron beams

    NASA Astrophysics Data System (ADS)

    Uedono, A.; Tenjinbayashi, K.; Tsutsui, T.; Shimahara, Y.; Miyake, H.; Hiramatsu, K.; Oshima, N.; Suzuki, R.; Ishibashi, S.

    2012-01-01

    Native defects in Si-doped AlGaN grown by metalorganic vapor phase epitaxy were probed by monoenergetic positron beams. Doppler broadening spectra of the annihilation radiation and positron lifetimes were measured, and these were compared with results obtained using first-principles calculation. For Si-doped AlxGa1-xN (4 × 1017 Si/cm3), the vacancy-type defects were introduced at above x = 0.54, and this was attributed to the transition of the growth mode to the Stranski-Krastanov mechanism from the Frank-van der Merwe mechanism. For Si-doped Al0.6Ga0.4N, the vacancy concentration increased with increasing Si concentration, and the major defect species was identified as Al vacancies. A clear correlation between the suppression of cathodoluminescence and the defect concentration was obtained, suggesting the cation vacancies act as nonradiative centers in AlGaN.

  1. Bias Selectable Dual Band AlGaN Ultra-violet Detectors

    NASA Technical Reports Server (NTRS)

    Yan, Feng; Miko, Laddawan; Franz, David; Guan, Bing; Stahle, Carl M.

    2007-01-01

    Bias selectable dual band AlGaN ultra-violet (UV) detectors, which can separate UV-A and UV-B using one detector in the same pixel by bias switching, have been designed, fabricated and characterized. A two-terminal n-p-n photo-transistor-like structure was used. When a forward bias is applied between the top electrode and the bottom electrode, the detectors can successfully detect W-A and reject UV-B. Under reverse bias, they can detect UV-B and reject UV-A. The proof of concept design shows that it is feasible to fabricate high performance dual-band UV detectors based on the current AlGaN material growth and fabrication technologies.

  2. Strain modification of AlGaN layers using swift heavy ions

    NASA Astrophysics Data System (ADS)

    Sathish, N.; Pathak, A. P.; Dhamodaran, S.; Sundaravel, B.; Nair, K. G. M.; Khan, S. A.; Avasthi, D. K.; Bazzan, M.; Trave, E.; Mazzoldi, P.

    2011-11-01

    Epitaxial AlGaN/GaN layers grown by molecular beam epitaxy (MBE) on SiC substrates were irradiated with 150 MeV Ag ions at a fluence of 5×1012 ions/cm2. The samples used in this study are 50 nm Al0.2Ga0.8N/1 nm AlN/1 μ m GaN/0.1 μ m AlN grown on SI 4H-SiC. Rutherford backscattering spectrometry/channeling strain measurements were carried out on off-normal axis of irradiated and unirradiated samples. In an as-grown sample, AlGaN layer is partially relaxed with a small tensile strain. After irradiation, this strain increases by 0.22% in AlGaN layer. Incident ion energy dependence of dechanneling parameter shows E 1/2 dependence, which corresponds to the dislocations. Defect densities were calculated from the E 1/2 graph. As a result of irradiation, the defect density increased on both GaN and AlGaN layers. The effect of irradiation induced-damages are analyzed as a function of material properties. Observed results from different characterization techniques such as RBS/channeling, high-resolution XRD and AFM are compared and complemented with each other to deduce the information. Possible mechanisms responsible for the observations have been discussed in detail.

  3. Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

    NASA Astrophysics Data System (ADS)

    Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Rajan, Siddharth

    2016-09-01

    Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and the light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polarization engineered tunnel junctions for ultra-wide bandgap AlGaN (Al mole fraction >50%) materials towards highly efficient UV LEDs. We demonstrate that polarization-induced three dimensional charge is beneficial in reducing tunneling barriers especially for high composition AlGaN tunnel junctions. The design of graded tunnel junction structures could lead to low tunneling resistance below 10-3 Ω cm2 and low voltage consumption below 1 V (at 1 kA/cm2) for high composition AlGaN tunnel junctions. Experimental demonstration of 292 nm emission was achieved through non-equilibrium hole injection into wide bandgap materials with bandgap energy larger than 4.7 eV, and detailed modeling of tunnel junctions shows that they can be engineered to have low resistance and can enable efficient emitters in the UV-C wavelength range.

  4. Characterizing the Three-Dimensional Structure of Block Copolymers via Sequential Infiltration Synthesis and Scanning Transmission Electron Tomography.

    PubMed

    Segal-Peretz, Tamar; Winterstein, Jonathan; Doxastakis, Manolis; Ramírez-Hernández, Abelardo; Biswas, Mahua; Ren, Jiaxing; Suh, Hyo Seon; Darling, Seth B; Liddle, J Alexander; Elam, Jeffrey W; de Pablo, Juan J; Zaluzec, Nestor J; Nealey, Paul F

    2015-05-26

    Understanding and controlling the three-dimensional structure of block copolymer (BCP) thin films is critical for utilizing these materials for sub-20 nm nanopatterning in semiconductor devices, as well as in membranes and solar cell applications. Combining an atomic layer deposition (ALD)-based technique for enhancing the contrast of BCPs in transmission electron microscopy (TEM) together with scanning TEM (STEM) tomography reveals and characterizes the three-dimensional structures of poly(styrene-block-methyl methacrylate) (PS-b-PMMA) thin films with great clarity. Sequential infiltration synthesis (SIS), a block-selective technique for growing inorganic materials in BCPs films in an ALD tool and an emerging technique for enhancing the etch contrast of BCPs, was harnessed to significantly enhance the high-angle scattering from the polar domains of BCP films in the TEM. The power of combining SIS and STEM tomography for three-dimensional (3D) characterization of BCP films was demonstrated with the following cases: self-assembled cylindrical, lamellar, and spherical PS-b-PMMA thin films. In all cases, STEM tomography has revealed 3D structures that were hidden underneath the surface, including (1) the 3D structure of defects in cylindrical and lamellar phases, (2) the nonperpendicular 3D surface of grain boundaries in the cylindrical phase, and (3) the 3D arrangement of spheres in body-centered-cubic (BCC) and hexagonal-closed-pack (HCP) morphologies in the spherical phase. The 3D data of the spherical morphologies was compared to coarse-grained simulations and assisted in validating the simulations' parameters. STEM tomography of SIS-treated BCP films enables the characterization of the exact structure used for pattern transfer and can lead to a better understating of the physics that is utilized in BCP lithography.

  5. Block copolymer micelles target Auger electron radiotherapy to the nucleus of HER2-positive breast cancer cells.

    PubMed

    Hoang, Bryan; Reilly, Raymond M; Allen, Christine

    2012-02-13

    Intracellular trafficking of Auger electron emitting radionuclides to perinuclear and nuclear regions of cells is critical to realizing their full therapeutic potential. In the present study, block copolymer micelles (BCMs) were labeled with the Auger electron emitter indium-111 ((111)In) and loaded with the radiosensitizer methotrexate. HER2 specific antibodies (trastuzumab fab) and nuclear localization signal (NLS; CGYGPKKKRKVGG) peptides were conjugated to the surface of the BCMs to direct uptake in HER2 expressing cells and subsequent localization in the cell nucleus. Cell uptake and intracellular distribution of the multifunctional BCMs were evaluated in a panel of breast cancer cell lines with different levels of HER2 expression. Indeed cell uptake was found to be HER2 density dependent, confirming receptor-mediated internalization of the BCMs. Importantly, conjugation of NLS peptides to the surface of BCMs was found to result in a significant increase in nuclear uptake of the radionuclide (111)In. Successful nuclear targeting was shown to improve the antipoliferative effect of the Auger electrons as measured by clonogenic assays. In addition, a significant radiation enhancement effect was observed by concurrent delivery of low-dose MTX and (111)In in all breast cancer cell lines evaluated.

  6. Three-dimensional reconstruction of black tiger prawn (Penaeus monodon) spermatozoa using serial block-face scanning electron microscopy.

    PubMed

    Feng, Tianyi; Paterson, Brian D; Webb, Robyn; Johnston, Stephen D

    2016-05-01

    Serial Block-Face Scanning Electron Microscopy (SBF-SEM) was used in this study to examine the ultrastructural morphology of Penaeus monodon spermatozoa. SBF-SEM provided a large dataset of sequential electron-microscopic-level images that facilitated comprehensive ultrastructural observations and three-dimensional reconstructions of the sperm cell. Reconstruction divulged a nuclear region of the spermatophoral spermatozoon filled with decondensed chromatin but with two apparent levels of packaging density. In addition, the nuclear region contained, not only numerous filamentous chromatin elements with dense microregions, but also large centrally gathered granular masses. Analysis of the sperm cytoplasm revealed the presence of degenerated mitochondria and membrane-less dense granules. A large electron-lucent vesicle and "arch-like" structures were apparent in the subacrosomal area, and an acrosomal core was found in the acrosomal vesicle. The spermatozoal spike arose from the inner membrane of the acrosomal vesicle, which was slightly bulbous in the middle region of the acrosomal vesicle, but then extended distally into a broad dense plate and to a sharp point proximally. This study has demonstrated that SBF-SEM is a powerful technique for the 3D ultrastructural reconstruction of prawn spermatozoa, that will no doubt be informative for further studies of sperm assessment, reproductive pathology and the spermiocladistics of penaeid prawns, and other decapod crustaceans. PMID:26877112

  7. Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlattices

    PubMed Central

    Zheng, T. C.; Lin, W.; Liu, R.; Cai, D. J.; Li, J. C.; Li, S. P.; Kang, J. Y.

    2016-01-01

    A novel multidimensional Mg-doped superlattice (SL) is proposed to enhance vertical hole conductivity in conventional Mg-doped AlGaN SL which generally suffers from large potential barrier for holes. Electronic structure calculations within the first-principle theoretical framework indicate that the densities of states (DOS) of the valence band nearby the Fermi level are more delocalized along the c-axis than that in conventional SL, and the potential barrier significantly decreases. Hole concentration is greatly enhanced in the barrier of multidimensional SL. Detailed comparisons of partial charges and decomposed DOS reveal that the improvement of vertical conductance may be ascribed to the stronger pz hybridization between Mg and N. Based on the theoretical analysis, highly conductive p-type multidimensional Al0.63Ga0.37N/Al0.51Ga0.49N SLs are grown with identified steps via metalorganic vapor-phase epitaxy. The hole concentration reaches up to 3.5 × 1018 cm−3, while the corresponding resistivity reduces to 0.7 Ω cm at room temperature, which is tens times improvement in conductivity compared with that of conventional SLs. High hole concentration can be maintained even at 100 K. High p-type conductivity in Al-rich structural material is an important step for the future design of superior AlGaN-based deep ultraviolet devices. PMID:26906334

  8. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers.

    PubMed

    Lee, Ya-Ju; Yao, Yung-Chi; Huang, Chun-Ying; Lin, Tai-Yuan; Cheng, Li-Lien; Liu, Ching-Yun; Wang, Mei-Tan; Hwang, Jung-Min

    2014-01-01

    In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.

  9. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers

    PubMed Central

    2014-01-01

    In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed. PMID:25206318

  10. Wafer-scale crack-free AlGaN on GaN through two-step selective-area growth for optically pumped stimulated emission

    NASA Astrophysics Data System (ADS)

    Ko, Young-Ho; Bae, Sung-Bum; Kim, Sung-Bock; Kim, Dong Churl; Leem, Young Ahn; Cho, Yong-Hoon; Nam, Eun-Soo

    2016-07-01

    Crack-free AlGaN template has been successfully grown over entire 2-in. wafer by using 2-step selective-area growth (SAG). The GaN truncated structure was obtained by vertical growth mode with low growth temperature. AlGaN of second step was grown under lateral growth mode. Low pressure enhanced the relative ratio of lateral to vertical growth rate as well as absolute overall growth rate. High V/III ratio was favorable for lateral growth mode. Crack-free planar AlGaN was obtained under low pressure of 30 Torr and high V/III ratio of 4400. The AlGaN was crack-free over entire 2-in. wafer and had quite uniform Al-mole fraction. The dislocation density of the AlGaN with 20% Al-composition was as low as ~7.6×108 /cm2, measured by cathodoluminescence. GaN/AlGaN multi-quantum well (MQW) with cladding and waveguide layers were grown on the crack-free AlGaN template with low dislocation density. It was confirmed that the MQW on the AlGaN template emitted the stimulated emission at 355.5 nm through optical pumping experiment. The AlGaN obtained by 2-step SAG would provide high crystal quality for highly-efficient optoelectronic devices as well as the ultraviolet laser diode.

  11. Serial block face-scanning electron microscopy: a tool for studying embryonic development at the cell-matrix interface.

    PubMed

    Starborg, Tobias; Kadler, Karl E

    2015-03-01

    Studies of gene regulation, signaling pathways, and stem cell biology are contributing greatly to our understanding of early embryonic vertebrate development. However, much less is known about the events during the latter half of embryonic development, when tissues comprising mostly extracellular matrix (ECM) are formed. The matrix extends far beyond the boundaries of individual cells and is refractory to study by conventional biochemical and molecular techniques; thus major gaps exist in our knowledge of the formation and three-dimensional (3D) organization of the dense tissues that form the bulk of adult vertebrates. Serial block face-scanning electron microscopy (SBF-SEM) has the ability to image volumes of tissue containing numerous cells at a resolution sufficient to study the organization of the ECM. Furthermore, whereas light microscopy was once relatively straightforward and electron microscopy was performed in specialist laboratories, the tables are turned; SBF-SEM is relatively straightforward and is becoming routine in high-end resolution studies of embryonic structures in vivo. In this review, we discuss the emergence of SBF-SEM as a tool for studying embryonic vertebrate development.

  12. Achieving high performance non-fullerene organic solar cells through tuning the numbers of electron deficient building blocks of molecular acceptors

    NASA Astrophysics Data System (ADS)

    Yang, Lei; Chen, Yusheng; Chen, Shangshang; Dong, Tao; Deng, Wei; Lv, Lei; Yang, Saina; Yan, He; Huang, Hui

    2016-08-01

    Two analogous dimer and tetramer compounds, SF-PDI2 and SF-PDI4, were designed, theoretically calculated, synthesized, and developed as electron acceptors for organic solar cells. The effects of the number of the electron deficient building blocks on the optical absorption, energy levels, charge transport, morphology, crystallinity, and photovoltaic performance of the molecules were investigated. In combination with two different donors, PTB7-Th and PffBT4T-2OD, the results showed that increasing the numbers of PDI building blocks is beneficial to photovoltaic performance and leads to efficiency over 5%.

  13. Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system

    PubMed Central

    He, Chenguang; Qin, Zhixin; Xu, Fujun; Zhang, Lisheng; Wang, Jiaming; Hou, Mengjun; Zhang, Shan; Wang, Xinqiang; Ge, Weikun; Shen, Bo

    2016-01-01

    Two AlGaN samples with different strain were designed to investigate mechanism of stress-driven composition evolution. It is discovered that AlGaN grown on AlN or (AlN/GaN superlattices (SLs))/GaN both consist of two distinct regions with different compositions: transition region and uniform region, which is attributed to the compositional pulling effect. The formation of the transition region is due to the partial stress release caused by the generation of misfit dislocations near the hetero-interface. And the Al composition in the uniform region depends on the magnitude of residual strain. The difference in relaxation degree is 80.5% for the AlGaN epilayers grown on different underlayers, leading to a large Al composition difference of 22%. The evolutionary process of Al composition along [0001] direction was investigated in detail. PMID:27112969

  14. Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates

    DOE PAGES

    Crawford, Mary H.; Allerman, Andrew A.; Armstrong, Andrew M.; Smith, Michael L.; Cross, Karen C.

    2015-10-30

    We fabricated optically pumped and electrically injected ultraviolet (UV) lasers on reduced-threading-dislocation-density (reduced-TDD) AlGaN templates. The overgrowth of sub-micron-wide mesas in the Al0.32Ga0.68N templates enabled a tenfold reduction in TDD, to (2–3) × 108 cm–2. Optical pumping of AlGaN hetero-structures grown on the reduced-TDD templates yielded a low lasing threshold of 34 kW/cm2 at 346 nm. Room-temperature pulsed operation of laser diodes at 353 nm was demonstrated, with a threshold of 22.5 kA/cm2. Furthermore, reduced-TDD templates have been developed across the entire range of AlGaN compositions, presenting a promising approach for extending laser diodes into the deep UV.

  15. Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates

    SciTech Connect

    Crawford, Mary H.; Allerman, Andrew A.; Armstrong, Andrew M.; Smith, Michael L.; Cross, Karen C.

    2015-10-30

    We fabricated optically pumped and electrically injected ultraviolet (UV) lasers on reduced-threading-dislocation-density (reduced-TDD) AlGaN templates. The overgrowth of sub-micron-wide mesas in the Al0.32Ga0.68N templates enabled a tenfold reduction in TDD, to (2–3) × 108 cm–2. Optical pumping of AlGaN hetero-structures grown on the reduced-TDD templates yielded a low lasing threshold of 34 kW/cm2 at 346 nm. Room-temperature pulsed operation of laser diodes at 353 nm was demonstrated, with a threshold of 22.5 kA/cm2. Furthermore, reduced-TDD templates have been developed across the entire range of AlGaN compositions, presenting a promising approach for extending laser diodes into the deep UV.

  16. Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates

    NASA Astrophysics Data System (ADS)

    Crawford, Mary H.; Allerman, Andrew A.; Armstrong, Andrew M.; Smith, Michael L.; Cross, Karen C.

    2015-11-01

    We fabricated optically pumped and electrically injected ultraviolet (UV) lasers on reduced-threading-dislocation-density (reduced-TDD) AlGaN templates. The overgrowth of sub-micron-wide mesas in the Al0.32Ga0.68N templates enabled a tenfold reduction in TDD, to (2-3) × 108 cm-2. Optical pumping of AlGaN hetero-structures grown on the reduced-TDD templates yielded a low lasing threshold of 34 kW/cm2 at 346 nm. Room-temperature pulsed operation of laser diodes at 353 nm was demonstrated, with a threshold of 22.5 kA/cm2. Reduced-TDD templates have been developed across the entire range of AlGaN compositions, presenting a promising approach for extending laser diodes into the deep UV.

  17. Enhanced luminous efficiency and brightness using DNA electron blocking layers in bio-organic light emitting diodes

    NASA Astrophysics Data System (ADS)

    Hagen, Joshua A.

    The biopolymer deoxyribonucleic acid (DNA) has been extracted from salmon (saDNA) and used successfully as an electron blocking layer (EBL) in multiple structures of Organic Light Emitting Diodes (OLED). Water soluble saDNA was complexed with a cationic surfactant hexadecytrimethylammonium chloride (CTMA) which makes the resulting DNA-CTMA molecule water insoluble, and soluble in common organic media such as alcohols. Solutions of DNA-CTMA and butanol make uniform thin films from 20nm to 5 microns in thickness by varying spin coating parameters and molecular weight. The optical properties of DNA-CTMA thin films include high transparency and low optical loss for applications at wavelengths above 400nm. The DNA-CTMA films have an electrical resistivity on the order of 107 O*cm. All of these properties combined made DNA-CTMA a candidate as an EBL in OLEDs, and this resulting device was termed a Bio-organic Light Emitting Diode (BioLED). Enhanced electroluminescent efficiency has been demonstrated in both green and blue emitting BioLEDs. The resulting green and blue BioLEDs showed a maximum luminous efficiency of 8.2 and 0.8 cd/A, respectively. The DNA based BioLEDs were as much as 10x more efficient and 30x brighter than their OLED counterparts. The enhancement in performance is due to the electron blocking action with the 0.9 eV (lowest unoccupied molecular orbital) value, allows hole injection to proceed with a 5.6eV (highest occupied molecular orbital) value. DNA-CTMA has also been successfully deposited in thin film form via molecular beam deposition (MBD). The growth was achieved at 160°C at vacuum levels of 10-5 Torr at a deposition rate of 0.8A/s. MBD grown DNA-CTMA thin films were highly uniform, optically transparent, and adhere to silicon, quartz and glass substrates more strongly than spin coated films. The material deposited was verified as DNA-CTMA through optical absorption, energy dispersive X-ray analysis, and using a DNA indicating fluorescent dye

  18. High-efficiency blue LEDs with thin AlGaN interlayers in InGaN/GaN MQWs grown on Si (111) substrates

    NASA Astrophysics Data System (ADS)

    Kimura, Shigeya; Yoshida, Hisashi; Ito, Toshihide; Okada, Aoi; Uesugi, Kenjiro; Nunoue, Shinya

    2016-02-01

    We demonstrate high-efficiency blue light-emitting diodes (LEDs) with thin AlGaN interlayers in InGaN/GaN multiquantum wells (MQWs) grown on Si (111) substrates. The peak external quantum efficiency (EQE) ηEQE of 82% at room temperature and the hot/cold factor (HCF) of 94% have been obtained by using the functional thin AlGaN interlayers in the MQWs in addition to reducing threading dislocation densities (TDDs) in the blue LEDs. An HCF is defined as ηEQE(85°C)/ηEQE(25°C). The blue LED structures were grown by metal-organic chemical vapor deposition on Si (111) substrates. The MQWs applied as an active layer have 8- pairs of InGaN/AlyGa1-yN/GaN (0<=y<=1) heterostructures. Thinfilm LEDs were fabricated by removing the Si (111) substrates from the grown layers. It is observed by high-resolution transmission electron microscopy and three-dimensional atom probe analysis that the 1 nm-thick AlyGa1-yN interlayers, whose Al content is y=0.3 or less, are continuously formed. EQE and the HCFs of the LEDs with thin Al0.15Ga0.85N interlayers are enhanced compared with those of the samples without the interlayers in the low-current-density region. We consider that the enhancement is due to both the reduction of the nonradiative recombination centers and the increase of the radiative recombination rate mediated by the strain-induced hole carriers indicated by the simulation of the energy band diagram.

  19. An electronic surgical order, undertaking patient education, and obtaining informed consent for regional analgesia before the day of surgery reduce block-related delays

    PubMed Central

    Brooks, Brandon S; Barman, Joydip; Ponce, Brent A; Sides, Alisa; Vetter, Thomas R

    2016-01-01

    Background Obtaining patient informed consent for a regional analgesia block on the day of surgery can result in surgical case delays. We hypothesized that implementing a preoperative electronic surgical order, undertaking patient education, and obtaining informed consent for a regional block in our preoperative assessment clinic prior to the day of surgery would reduce surgical case delays attributed to our regional anesthesia pain service and increase the percentage of patients for whom our regional anesthesia pain service was requested to provide a block. Methods A prospective two-group time-series design, with a nonrandomized, pre- and post-intervention data collection strategy, was applied. Based upon the surgeons’ newly implemented preoperative electronic outpatient orders, patients were identified by our preoperative assessment clinic staff to receive educational materials. The attending anesthesiologist in the preoperative assessment clinic then obtained written informed consent. Block-related delay and utilization data were analyzed with conventional inferential statistics. Results We observed a 14.8% (95% CI: 9.4%, 20.1%; P<0.001) decrease in surgical case delays, attributed to the regional nerve block, in the post- vs pre-intervention group. In addition, there was a 9.9% (95% CI: 4.7%, 15.1%); P<0.001) increase in the proportion of patients for whom a regional nerve block was ordered by our three high-volume orthopedic surgeons in the post- vs pre-intervention time periods. Conclusion When performed before the day of surgery, a surgeon’s electronic order, patient education, and informed consent for regional postoperative analgesia can improve patient throughput, thereby reducing block-related operating room delays. The preoperative assessment clinic can serve as a venue to achieve this goal, thereby adding value by decreasing downstream delays on the day of surgery. PMID:27785096

  20. Quantum chemical mechanism in parasitic reaction of AlGaN alloys formation

    NASA Astrophysics Data System (ADS)

    Makino, Osamu; Nakamura, Koichi; Tachibana, Akitomo; Tokunaga, Hiroki; Akutsu, Nakao; Matsumoto, Koh

    2000-06-01

    The mechanism of parasitic reactions among trimethylaluminum (TMA), trimethylgallium (TMG), and NH 3 in atmospheric pressure (AP) MOVPE for growth of AlGaN is theoretically studied using the quantum chemical method. The calculations show that metal-nitrogen chain growth reaction easily proceeds through the successive reactions of 'complex formation with NH 3' and 'CH 4 elimination by the bimolecular mechanism'. Additionally, a parasitic reaction in APMOVPE using other raw material is also investigated. The calculated result shows that small change of raw material raises activation energy of parasitic reaction, and, thus, the parasitic reaction is suppressed. This result suggests a way to improve APMOVPE by a suitable choice of substituent.

  1. Effects of electron beam irradiation on the property behaviour of poly(ether-block-amide) blended with various stabilisers

    NASA Astrophysics Data System (ADS)

    Murray, Kieran A.; Kennedy, James E.; Barron, Valerie; McEvoy, Brian; Vrain, Olivier; Ryan, Damien; Cowman, Richard; Higginbotham, Clement L.

    2015-05-01

    Radiosterilisation can induce modifications and/or degradation to transpire in poly(ether-block-amide) (PEBA) following irradiation. The current investigation utilises combined synergistic mixtures of stabilisers to minimise these effects, by melt blending them with the PEBA material. Hindered amine stabilisers (HAS), primary antioxidants and secondary antioxidants were the stabilisers incorporate to reduce/eliminate the effects of 50 kGy electron beam irradiation dose on the material. Results were discussed by comparing the stabilising efficiency of mixtures on the PEBA material in contrast to the control sample. Dynamic frequency sweeps demonstrated the formation of crosslinks, where the degree of crosslinking was dependent on the combination of stabilisers mixed in the base material (PEBA). The storage modulus displayed that PEBA blended with Irganox 565 had very slight changes in contrast to all other samples following irradiation. However, since this sample is a phenol containing system, severe discolouration was observed in comparison to other samples due to the oxidation of the hindered phenol. Overall, this study provides compelling evidence that a combined synergistic mixture of Irganox 565 (multifunctional phenolic antioxidant) and Tinuvin 783 (hindered amide light stabiliser) with PEBA, resulted in the best radiation stability.

  2. Efficiency improvements in single-heterojunction organic photovoltaic cells by insertion of wide-bandgap electron-blocking layers

    NASA Astrophysics Data System (ADS)

    Ho, Chiu-Sheng; Lee, Ching-Sung; Hsu, Wei-Chou; Lin, Cheng-Yung; Lai, Ying-Nan; Wang, Ching-Wu

    2012-10-01

    This letter reports efficiency improvements in single-heterojunction organic photovoltaic (OPV) cells exploiting different wide-bandgap electron-blocking layer (EBL) materials of N,N,NO',N' tetrakis(4-methoxyphenyl)-benzidine (MeO-TPD), Tris(phenypyrazole)iridium (Ir(ppz)3), or 4,4,4"-tris-(3-methylphenylphenylamino)triphenylamine (m-MTDATA), respectively. The OPV structure consists of an indium-tin-oxide (ITO) anode, 4 nm m-MTDATA, 30 nm copper phthalocyanine (CuPc), 40 nm fullerene (C60), 10 nm 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), and a 100 nm Al cathode. Optimum device performances by insertion the EBL of m-MTDATA have been achieved, including short-circuit current density (JSC) of 7.26 mA/cm2, open-circuit voltage (VOC) of 0.5 V, fill-factor (FF) of 43%, and power conversion efficiency (PCE) of 1.56% at an illumination intensity of 100 mW/cm2.

  3. Simulation for spectral response of solar-blind AlGaN based p-i-n photodiodes

    NASA Astrophysics Data System (ADS)

    Xue, Shiwei; Xu, Jintong; Li, Xiangyang

    2015-04-01

    In this article, we introduced how to build a physical model of refer to the device structure and parameters. Simulations for solar-blind AlGaN based p-i-n photodiodes spectral characteristics were conducted in use of Silvaco TCAD, where device structure and parameters are comprehensively considered. In simulation, the effects of polarization, Urbach tail, mobility, saturated velocities and lifetime in AlGaN device was considered. Especially, we focused on how the concentration-dependent Shockley-Read-Hall (SRH) recombination model affects simulation results. By simulating, we analyzed the effects in spectral response caused by TAUN0 and TAUP0, and got the values of TAUN0 and TAUP0 which can bring a result coincides with test results. After that, we changed their values and made the simulation results especially the part under 255 nm performed better. In conclusion, the spectral response between 200 nm and 320 nm of solar-blind AlGaN based p-i-n photodiodes were simulated and compared with test results. We also found that TAUN0 and TAUP0 have a large impact on spectral response of AlGaN material.

  4. Radiation damage resistance of AlGaN detectors for applications in the extreme-ultraviolet spectral range

    SciTech Connect

    Barkusky, Frank; Peth, Christian; Bayer, Armin; Mann, Klaus; John, Joachim; Malinowski, Pawel E.

    2009-09-15

    We report on the fabrication of aluminum gallium nitride (AlGaN) Schottky-photodiode-based detectors. AlGaN layers were grown using metal-organic chemical vapor deposition (MOCVD) on Si(111) wafers. The diodes were characterized at a wavelength of 13.5 nm using a table-top extreme-ultraviolet (EUV) radiation source, consisting of a laser-produced xenon plasma and a Schwarzschild objective. The responsivity of the diodes was tested between EUV energies ranging from 320 nJ down to several picojoules. For low fluences, a linear responsivity of 7.14 mAs/J could be determined. Saturation starts at approximately 1 nJ, merging into a linear response of 0.113 mAs/J, which could be attributed to the photoeffect on the Au electrodes on top of the diode. Furthermore, degradation tests were performed up to an absolute dose of 3.3x10{sup 19} photons/cm{sup 2}. AlGaN photodiodes were compared to commercially available silicon-based photodetectors. For AlGaN diodes, responsivity does not change even for the highest EUV dose, whereas the response of the Si diode decreases linearly to {approx}93% after 2x10{sup 19} photons/cm{sup 2}.

  5. Heart Block

    MedlinePlus

    ... Block Explore Heart Block What Is... Electrical System & EKG Results Types Causes Who Is at Risk Signs & ... heart block. Doctors use a test called an EKG (electrocardiogram) to help diagnose heart block. This test ...

  6. Compositional inhomogeneities in AlGaN thin films grown by molecular beam epitaxy: Effect on MSM UV photodetectors

    NASA Astrophysics Data System (ADS)

    Pramanik, Pallabi; Sen, Sayantani; Singha, Chirantan; Roy, Abhra Shankar; Das, Alakananda; Sen, Susanta; Bhattacharyya, A.

    2016-10-01

    Ultraviolet (UV) MSM photodetectors (PD) based on AlGaN alloys find many applications, including flame sensing. In this work we investigate the dependence of AlGaN based photodetectors grown by MBE on the kinetics of growth. MSM photodetectors were fabricated in the interdigitated configuration with Ni/Au contacts having 400 μm finger length and 10 μm finger spacing. Bulk Al0.4Ga0.6N films were grown on to sapphire substrates using an AlN buffer layer. A series of PDs were developed using the Al0.4Ga0.6N films grown under different group III/V flux ratios ranging from stoichiometric conditions to much higher than unity. Upon testing, it was observed that the otherwise identical photodetectors show significant decrease in dark current as AlGaN deposition conditions change from stoichiometric to excess group III, due to reduction of unintentional incorporation of oxygen-related point defects. In addition, the intensity and spectral dependence of the photocurrent also change, showing an extended low energy tail for the former and a sharp and prominent excitonic peak for the latter. The optical transmission measurements indicate a variation in Urbach energy with deposition conditions of the AlGaN films, although they have the same absorption edge. While all samples show a single red-shifted photoluminescence peak at room temperature, upon cooling, multiple higher energy peaks appear in the photoluminescence (PL) spectra, indicating that the alloys contain complex compositional inhomogeneities. Two types of alloy fluctuations, determined by the growth conditions, have been identified that modulate the optoelectronic properties of AlGaN by changing the spatial localization of excitons, thereby altering their stability. We identified that growth under stoichiometric conditions leads to compositional inhomogeneities that play a detrimental role in the operation of MSM photodetectors, which reduces the sharpness of the sensitivity edge, while growth under excess metal

  7. Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier

    NASA Astrophysics Data System (ADS)

    Jia, Chuanyu; Yu, Tongjun; Feng, Xiaohui; Wang, Kun; Zhang, Guoyi

    2016-09-01

    The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL.

  8. Efficiency improvements in AlGaN-based deep ultraviolet light-emitting diodes using inverted-V-shaped graded Al composition electron blocking layer

    NASA Astrophysics Data System (ADS)

    Fan, Xuancong; Sun, Huiqing; Li, Xuna; Sun, Hao; Zhang, Cheng; Zhang, Zhuding; Guo, Zhiyou

    2015-12-01

    This paper principally presents the numerical investigation of electron blocking layers (EBL) structures with different Al concentration gradient changing in AlGaN-based deep ultraviolet light emitting diodes (DUV-LEDs). Compared to conventional EBL structure with constant Al composition, the LED with inverted-V-shaped EBL structure has higher output power and carriers recombination rate, but the efficiency droop will decrease obviously while the electron leakage current can reduce much as well. Therefore, the result indicates that appropriate Al component in LED can enhance electron and hole recombination rate in the active region. The improved performance is mainly attribute the sufficient electron-barrier height and relatively higher hole injection efficiency which results from the mitigated band-bending.

  9. Deep ultraviolet photoluminescence of Tm-doped AlGaN alloys

    SciTech Connect

    Nepal, N.; Zavada, J. M.; Lee, D. S.; Steckl, A. J.; Sedhain, A.; Lin, J. Y.; Jiang, H. X.

    2009-03-16

    The ultraviolet (UV) photoluminescence (PL) properties of Tm-doped Al{sub x}Ga{sub 1-x}N (0.39{<=}x{<=}1) alloys grown by solid-source molecular beam epitaxy were probed using above-bandgap excitation from a laser source at 197 nm. The PL spectra show dominant UV emissions at 298 and 358 nm only for samples with x=1 and 0.81. Temperature dependence of the PL intensities of these emission lines reveals exciton binding energies of 150 and 57 meV, respectively. The quenching of these UV emissions appears related to the thermal activation of the excitons bound to rare-earth structured isovalent (RESI) charge traps, which transfer excitonic energy to Tm{sup 3+} ions resulting in the UV emissions. A model of the RESI trap levels in AlGaN alloys is presented.

  10. Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

    NASA Astrophysics Data System (ADS)

    Cheng, Jianpeng; Yang, Xuelin; Sang, Ling; Guo, Lei; Zhang, Jie; Wang, Jiaming; He, Chenguang; Zhang, Lisheng; Wang, Maojun; Xu, Fujun; Tang, Ning; Qin, Zhixin; Wang, Xinqiang; Shen, Bo

    2016-03-01

    By employing a single AlGaN layer with low Al composition, high quality and uniformity AlGaN/GaN heterostructures have been successfully grown on Si substrates by metal-organic chemical vapor deposition (MOCVD). The heterostructures exhibit a high electron mobility of 2150 cm2/Vs with an electron density of 9.3 × 1012 cm‑2. The sheet resistance is 313 ± 4 Ω/◻ with ±1.3% variation. The high uniformity is attributed to the reduced wafer bow resulting from the balance of the compressive stress induced and consumed during the growth, and the thermal tensile stress induced during the cooling down process. By a combination of theoretical calculations and in situ wafer curvature measurements, we find that the compressive stress consumed by the dislocation relaxation (~1.2 GPa) is comparable to the value of the thermal tensile stress (~1.4 GPa) and we should pay more attention to it during growth of GaN on Si substrates. Our results demonstrate a promising approach to simplifying the growth processes of GaN-on-Si to reduce the wafer bow and lower the cost while maintaining high material quality.

  11. Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

    PubMed Central

    Cheng, Jianpeng; Yang, Xuelin; Sang, Ling; Guo, Lei; Zhang, Jie; Wang, Jiaming; He, Chenguang; Zhang, Lisheng; Wang, Maojun; Xu, Fujun; Tang, Ning; Qin, Zhixin; Wang, Xinqiang; Shen, Bo

    2016-01-01

    By employing a single AlGaN layer with low Al composition, high quality and uniformity AlGaN/GaN heterostructures have been successfully grown on Si substrates by metal-organic chemical vapor deposition (MOCVD). The heterostructures exhibit a high electron mobility of 2150 cm2/Vs with an electron density of 9.3 × 1012 cm−2. The sheet resistance is 313 ± 4 Ω/◻ with ±1.3% variation. The high uniformity is attributed to the reduced wafer bow resulting from the balance of the compressive stress induced and consumed during the growth, and the thermal tensile stress induced during the cooling down process. By a combination of theoretical calculations and in situ wafer curvature measurements, we find that the compressive stress consumed by the dislocation relaxation (~1.2 GPa) is comparable to the value of the thermal tensile stress (~1.4 GPa) and we should pay more attention to it during growth of GaN on Si substrates. Our results demonstrate a promising approach to simplifying the growth processes of GaN-on-Si to reduce the wafer bow and lower the cost while maintaining high material quality. PMID:26960730

  12. Probing alloy composition gradient and nanometer-scale carrier localization in single AlGaN nanowires by nanocathodoluminescence

    NASA Astrophysics Data System (ADS)

    Pierret, A.; Bougerol, C.; Gayral, B.; Kociak, M.; Daudin, B.

    2013-08-01

    The optical properties of single AlGaN nanowires grown by plasma-assisted molecular beam epitaxy have been studied by nanocathodoluminescence. Optical emission was found to be position-dependent and to occur in a wide wavelength range, a feature which has been assigned to a composition gradient along the nanowire growth axis, superimposed on local composition fluctuations at the nanometer scale. This behavior is associated with the growth mode of such AlGaN nanowires, which is governed by kinetics, leading to the successive formation of (i) a zone with strong local composition fluctuations followed by (ii) a zone with a marked composition gradient and, eventually, (iii) a zone corresponding to a steady state regime and the formation of a homogeneous alloy.

  13. Probing alloy composition gradient and nanometer-scale carrier localization in single AlGaN nanowires by nanocathodoluminescence.

    PubMed

    Pierret, A; Bougerol, C; Gayral, B; Kociak, M; Daudin, B

    2013-08-01

    The optical properties of single AlGaN nanowires grown by plasma-assisted molecular beam epitaxy have been studied by nanocathodoluminescence. Optical emission was found to be position-dependent and to occur in a wide wavelength range, a feature which has been assigned to a composition gradient along the nanowire growth axis, superimposed on local composition fluctuations at the nanometer scale. This behavior is associated with the growth mode of such AlGaN nanowires, which is governed by kinetics, leading to the successive formation of (i) a zone with strong local composition fluctuations followed by (ii) a zone with a marked composition gradient and, eventually, (iii) a zone corresponding to a steady state regime and the formation of a homogeneous alloy.

  14. Impedance analysis of nano thickness layered AlGaN acoustic sensor deposited by thermionic vacuum arc

    NASA Astrophysics Data System (ADS)

    Özen, Soner; Bilgiç, Eyüp; Gülmez, Gülay; Şenay, Volkan; Pat, Suat; Korkmaz, Şadan; Mohammadigharehbagh, Reza

    2016-03-01

    In this study, AlGaN acoustic sensor was deposited on aluminum metal substrate by thermionic vacuum arc (TVA) method for the first time. Gallium materials are used in many applications for optoelectronic device and semiconductor technology. Thermionic vacuum arc is the deposition technology for the variously materials and applications field. The thickness of the acoustic sensor is in deposited as nano layer. Impedance analyses were realized. Also, TVA production parameters and some properties of the deposited layers were investigated. TVA is a fast deposition technology for the gallium compounds and doped gallium compounds. Obtained results show that AlGaN materials are very promising materials. Moreover, these acoustic sensors have been produced by TVA technology.

  15. Room temperature epitaxial growth of AlGaN on ZnO by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Kobayashi, Atsushi; Ohta, Jitsuo; Kawaguchi, Yuji; Fujioka, Hiroshi

    2006-09-01

    The authors have grown Al0.1Ga0.9N films on atomically flat ZnO substrates at room temperature (RT) by pulsed laser deposition. Epitaxial growth of AlGaN at RT proceeds in the layer-by-layer mode, and the films show atomically flat stepped and terraced surfaces. On the other hand, growth at 600°C proceeds three dimensionally, and the films suffer from degradation in their crystalline quality and from rough surface morphology. These results indicate that suppression of the formation of interfacial layers between AlGaN and ZnO by reducing the growth temperature is inherently important in order to take advantage of the nearly lattice-matched ZnO substrates. They have also found that high-quality AlGaN films can be obtained under highly N-rich conditions at reduced growth temperatures, which provides a striking contrast to the case of molecular beam epitaxy.

  16. X-ray microscopy as an approach to increasing accuracy and efficiency of serial block-face imaging for correlated light and electron microscopy of biological specimens.

    PubMed

    Bushong, Eric A; Johnson, Donald D; Kim, Keun-Young; Terada, Masako; Hatori, Megumi; Peltier, Steven T; Panda, Satchidananda; Merkle, Arno; Ellisman, Mark H

    2015-02-01

    The recently developed three-dimensional electron microscopic (EM) method of serial block-face scanning electron microscopy (SBEM) has rapidly established itself as a powerful imaging approach. Volume EM imaging with this scanning electron microscopy (SEM) method requires intense staining of biological specimens with heavy metals to allow sufficient back-scatter electron signal and also to render specimens sufficiently conductive to control charging artifacts. These more extreme heavy metal staining protocols render specimens light opaque and make it much more difficult to track and identify regions of interest (ROIs) for the SBEM imaging process than for a typical thin section transmission electron microscopy correlative light and electron microscopy study. We present a strategy employing X-ray microscopy (XRM) both for tracking ROIs and for increasing the efficiency of the workflow used for typical projects undertaken with SBEM. XRM was found to reveal an impressive level of detail in tissue heavily stained for SBEM imaging, allowing for the identification of tissue landmarks that can be subsequently used to guide data collection in the SEM. Furthermore, specific labeling of individual cells using diaminobenzidine is detectable in XRM volumes. We demonstrate that tungsten carbide particles or upconverting nanophosphor particles can be used as fiducial markers to further increase the precision and efficiency of SBEM imaging. PMID:25392009

  17. Onset of the Electronic Absorption Spectra of Isolated and π-Stacked Oligomers of 5,6-Dihydroxyindole: An Ab Initio Study of the Building Blocks of Eumelanin.

    PubMed

    Tuna, Deniz; Udvarhelyi, Anikó; Sobolewski, Andrzej L; Domcke, Wolfgang; Domratcheva, Tatiana

    2016-04-14

    Eumelanin is a naturally occurring skin pigment which is responsible for developing a suntan. The complex structure of eumelanin consists of π-stacked oligomers of various indole derivatives, such as the monomeric building block 5,6-dihydroxyindole (DHI). In this work, we present an ab initio wave-function study of the absorption behavior of DHI oligomers and of doubly and triply π-stacked species of these oligomers. We have simulated the onset of the electronic absorption spectra by employing the MP2 and the linear-response CC2 methods. Our results demonstrate the effect of an increasing degree of oligomerization of DHI and of an increasing degree of π-stacking of DHI oligomers on the onset of the absorption spectra and on the degree of red-shift toward the visible region of the spectrum. We find that π-stacking of DHI and its oligomers substantially red-shifts the onset of the absorption spectra. Our results also suggest that the optical properties of biological eumelanin cannot be simulated by considering the DHI building blocks alone, but instead the building blocks indole-semiquinone and indole-quinone have to be considered as well. This study contributes to advancing the understanding of the complex photophysics of the eumelanin biopolymer. PMID:27005558

  18. Onset of the Electronic Absorption Spectra of Isolated and π-Stacked Oligomers of 5,6-Dihydroxyindole: An Ab Initio Study of the Building Blocks of Eumelanin.

    PubMed

    Tuna, Deniz; Udvarhelyi, Anikó; Sobolewski, Andrzej L; Domcke, Wolfgang; Domratcheva, Tatiana

    2016-04-14

    Eumelanin is a naturally occurring skin pigment which is responsible for developing a suntan. The complex structure of eumelanin consists of π-stacked oligomers of various indole derivatives, such as the monomeric building block 5,6-dihydroxyindole (DHI). In this work, we present an ab initio wave-function study of the absorption behavior of DHI oligomers and of doubly and triply π-stacked species of these oligomers. We have simulated the onset of the electronic absorption spectra by employing the MP2 and the linear-response CC2 methods. Our results demonstrate the effect of an increasing degree of oligomerization of DHI and of an increasing degree of π-stacking of DHI oligomers on the onset of the absorption spectra and on the degree of red-shift toward the visible region of the spectrum. We find that π-stacking of DHI and its oligomers substantially red-shifts the onset of the absorption spectra. Our results also suggest that the optical properties of biological eumelanin cannot be simulated by considering the DHI building blocks alone, but instead the building blocks indole-semiquinone and indole-quinone have to be considered as well. This study contributes to advancing the understanding of the complex photophysics of the eumelanin biopolymer.

  19. Improved performance of N-face AlGaN-based deep ultraviolet light-emitting diodes with superlattice electron blocking layer

    NASA Astrophysics Data System (ADS)

    Xie, F.; Wang, F. X.

    2016-08-01

    The performance of N-face AlGaN-based deep ultraviolet light-emitting diodes (UV LEDs) with superlattice electron blocking layer (EBL) is investigated by using two-dimensional numerical simulation. The simulated results demonstrate that the adoption of N-face UV LED with superlattice EBL is critical to improve the device's performance. In comparison with the Ga-face UV LEDs with superlattice and conventional EBL, the N-face device structure with superlattice EBL possesses numerous advantages. By detailedly analyzing the profiles of energy band diagrams, distribution of carrier concentration, and radiative recombination rate, the advantages of N-face UV LED with superlattice EBL are attributed to the higher barrier for electron leakage, and simultaneously reduced barrier for hole injection compared with conventional Ga-face UV LEDs.

  20. Fabrication of Very High Efficiency 5.8 GHz Power Amplifiers using AlGaN HFETs on SiC Substrates for Wireless Power Transmission

    NASA Technical Reports Server (NTRS)

    Sullivan, Gerry

    2001-01-01

    For wireless power transmission using microwave energy, very efficient conversion of the DC power into microwave power is extremely important. Class E amplifiers have the attractive feature that they can, in theory, be 100% efficient at converting, DC power to RF power. Aluminum gallium nitride (AlGaN) semiconductor material has many advantageous properties, relative to silicon (Si), gallium arsenide (GaAs), and silicon carbide (SiC), such as a much larger bandgap, and the ability to form AlGaN/GaN heterojunctions. The large bandgap of AlGaN also allows for device operation at higher temperatures than could be tolerated by a smaller bandgap transistor. This could reduce the cooling requirements. While it is unlikely that the AlGaN transistors in a 5.8 GHz class E amplifier can operate efficiently at temperatures in excess of 300 or 400 C, AlGaN based amplifiers could operate at temperatures that are higher than a GaAs or Si based amplifier could tolerate. Under this program, AlGaN microwave power HFETs have been fabricated and characterized. Hybrid class E amplifiers were designed and modeled. Unfortunately, within the time frame of this program, good quality HFETs were not available from either the RSC laboratories or commercially, and so the class E amplifiers were not constructed.

  1. Composition dependent valence band order in c-oriented wurtzite AlGaN layers

    SciTech Connect

    Neuschl, B. Helbing, J.; Knab, M.; Lauer, H.; Madel, M.; Thonke, K.; Feneberg, M.

    2014-09-21

    The valence band order of polar wurtzite aluminum gallium nitride (AlGaN) layers is analyzed for a dense series of samples, grown heteroepitaxially on sapphire substrates, covering the complete composition range. The excitonic transition energies, found by temperature dependent photoluminescence (PL) spectroscopy, were corrected to the unstrained state using input from X-ray diffraction. k∙p theory yields a critical relative aluminum concentration x{sub c}=(0.09±0.05) for the crossing of the uppermost two valence bands for strain free material, shifting to higher values for compressively strained samples, as supported by polarization dependent PL. The analysis of the strain dependent valence band crossing reconciles the findings of other research groups, where sample strain was neglected. We found a bowing for the energy band gap to the valence band with Γ₉ symmetry of b{sub Γ₉}=0.85eV, and propose a possible bowing for the crystal field energy of b{sub cf}=-0.12eV. A comparison of the light extraction efficiency perpendicular and parallel to the c axis of Al{sub x}Ga{sub 1-x}N/Al{sub y}Ga{sub 1-y}N quantum well structures is discussed for different compositions.

  2. Population Blocks.

    ERIC Educational Resources Information Center

    Smith, Martin H.

    1992-01-01

    Describes an educational game called "Population Blocks" that is designed to illustrate the concept of exponential growth of the human population and some potential effects of overpopulation. The game material consists of wooden blocks; 18 blocks are painted green (representing land), 7 are painted blue (representing water); and the remaining…

  3. Bay-annulated indigo (BAI) as an excellent electron accepting building block for high performance organic semiconductors

    DOEpatents

    Liu, Yi; He, Bo; Pun, Andrew

    2016-04-19

    A novel electron acceptor based on bay-annulated indigo (BAI) was synthesized and used for the preparation of a series of high performance donor-acceptor small molecules and polymers. The resulting materials possess low-lying LUMO energy level and small HOMO-LUMO gaps, while their films exhibited high crystallinity upon thermal treatment, commensurate with high field effect mobilities and ambipolar transfer characteristics.

  4. Bay-annulated indigo (BAI) as an excellent electron accepting building block for high performance organic semiconductors

    SciTech Connect

    Liu, Yi; He, Bo; Pun, Andrew

    2015-11-24

    A novel electron acceptor based on bay-annulated indigo (BAI) was synthesized and used for the preparation of a series of high performance donor-acceptor small molecules and polymers. The resulting materials possess low-lying LUMO energy level and small HOMO-LUMO gaps, while their films exhibited high crystallinity upon thermal treatment, commensurate with high field effect mobilities and ambipolar transfer characteristics.

  5. Dithiazolo[5,4-b:4',5'-d]phosphole: a highly luminescent electron-accepting building block.

    PubMed

    He, Xiaoming; Woo, Alva Y Y; Borau-Garcia, Javier; Baumgartner, Thomas

    2013-06-01

    A family of highly emissive dithiazolo[5,4-b:4',5'-d]phospholes has been designed and synthesized. The structures of two trivalent P species, as well as their corresponding P oxides, have been confirmed by X-ray crystallography. The parent dithiazolo[5,4-b:4',5'-d]phosphole oxide exhibits strong blue photoluminescence at λem = 442 nm, with an excellent quantum yield efficiency of ϕPL = 0.81. The photophysical properties of these compounds can be easily tuned by extension of the conjugation and modification of the phosphorus center. Compared with the established dithieno[3,2-b:2',3'-d]phosphole system, the incorporation of electronegative nitrogen atoms leads to significantly lowered frontier orbital energy levels, as validated by both electrochemistry and theoretical calculations, thus suggesting that the dithiazolo[5,4-b:4',5'-d]phospholes are valuable, air-stable, n-type conjugated materials. These new building blocks have been further applied to the construction of an extended oligomer with fluorene. Extension of the dithiazolophosphole core with triazole units through click reactions also provides a suitable N,N-chelating moiety for metal binding and a representative molecular species was successfully used as a selective colorimetric and fluorescent sensor for Cu(II) ions.

  6. Cardiac myocyte diversity and a fibroblast network in the junctional region of the zebrafish heart revealed by transmission and serial block-face scanning electron microscopy.

    PubMed

    Lafontant, Pascal J; Behzad, Ali R; Brown, Evelyn; Landry, Paul; Hu, Norman; Burns, Alan R

    2013-01-01

    The zebrafish has emerged as an important model of heart development and regeneration. While the structural characteristics of the developing and adult zebrafish ventricle have been previously studied, little attention has been paid to the nature of the interface between the compact and spongy myocardium. Here we describe how these two distinct layers are structurally and functionally integrated. We demonstrate by transmission electron microscopy that this interface is complex and composed primarily of a junctional region occupied by collagen, as well as a population of fibroblasts that form a highly complex network. We also describe a continuum of uniquely flattened transitional cardiac myocytes that form a circumferential plate upon which the radially-oriented luminal trabeculae are anchored. In addition, we have uncovered within the transitional ring a subpopulation of markedly electron dense cardiac myocytes. At discrete intervals the transitional cardiac myocytes form contact bridges across the junctional space that are stabilized through localized desmosomes and fascia adherentes junctions with adjacent compact cardiac myocytes. Finally using serial block-face scanning electron microscopy, segmentation and volume reconstruction, we confirm the three-dimensional nature of the junctional region as well as the presence of the sheet-like fibroblast network. These ultrastructural studies demonstrate the previously unrecognized complexity with which the compact and spongy layers are structurally integrated, and provide a new basis for understanding development and regeneration in the zebrafish heart.

  7. Growth of AlGaN on silicon substrates: a novel way to make back-illuminated ultraviolet photodetectors

    NASA Astrophysics Data System (ADS)

    McClintock, Ryan; Razeghi, Manijeh

    2015-08-01

    AlGaN, with its tunable wide-bandgap is a good choice for the realization of ultraviolet photodetectors. AlGaN films tend to be grown on foreign substrates such as sapphire, which is the most common choice for back-illuminated devices. However, even ultraviolet opaque substrates like silicon holds promise because, silicon can be removed by chemical treatment to allow back-illumination,1 and it is a very low-cost substrate which is available in large diameters up to 300 mm. However, Implementation of silicon as the solar-blind PD substrates requires overcoming the lattice-mismatch (17%) with the AlxGa1-xN that leads to high density of dislocation and crack-initiating stress. In this talk, we report the growth of thick crack-free AlGaN films on (111) silicon substrates through the use of a substrate patterning and mask-less selective area regrowth. This technique is critical as it decouples the epilayers and the substrate and allows for crack-free growth; however, the masking also helps to reduce the dislocation density by inclining the growth direction and encouraging dislocations to annihilate. A back-illuminated p-i-n PD structure is subsequently grown on this high quality template layer. After processing and hybridizing the device we use a chemical process to selectively remove the silicon substrate. This removal has minimal effect on the device, but it removes the UV-opaque silicon and allows back-illumination of the photodetector. We report our latest results of back-illuminated solar-blind photodetectors growth on silicon.

  8. Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor

    NASA Astrophysics Data System (ADS)

    Zhao, Sheng-Lei; Chen, Wei-Wei; Yue, Tong; Wang, Yi; Luo, Jun; Mao, Wei; Ma, Xiao-Hua; Hao, Yue

    2013-11-01

    In this paper, the influence of a drain field plate (FP) on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor (HEMT) is investigated. The HEMT with only a gate FP is optimized, and breakdown voltage VBR is saturated at 1085 V for gate—drain spacing LGD >= 8 μm. On the basis of the HEMT with a gate FP, a drain FP is added with LGD = 10 μm. For the length of the drain FP LDF <= 2 μm, VBR is almost kept at 1085 V, showing no degradation. When LDF exceeds 2 μm, VBR decreases obviously as LDF increases. Moreover, the larger the LDF, the larger the decrease of VBR. It is concluded that the distance between the gate edge and the drain FP edge should be larger than a certain value to prevent the drain FP from affecting the forward blocking voltage and the value should be equal to the LGD at which VBR begins to saturate in the first structure. The electric field and potential distribution are simulated and analyzed to account for the decrease of VBR.

  9. Effects of temperature, packaging and electron beam irradiation processing conditions on the property behaviour of Poly (ether-block-amide) blends.

    PubMed

    Murray, Kieran A; Kennedy, James E; McEvoy, Brian; Vrain, Olivier; Ryan, Damien; Cowman, Richard; Higginbotham, Clement L

    2014-06-01

    The radiation stability of Poly (ether-block-amide) (PEBA) blended with a multifunctional phenolic antioxidant and a hindered amide light stabiliser was examined under various temperatures, packaging and electron beam processing conditions. FTIR revealed that there were slight alterations to the PEBA before irradiation; however, these became more pronounced following irradiation. The effect of varying the temperature, packaging and processing conditions on the resultant PEBA properties was apparent. For example, rheology demonstrated that the structural properties could be enhanced by manipulating the aforementioned criteria. Mechanical testing exhibited less radiation resistance when the PEBA samples were vacuum packed and exposed to irradiation. MFI and AFM confirmed that the melting strength and surface topography could be reduced/increased depending on the conditions employed. From this study it was concluded that virgin PEBA submerged in dry ice with non-vacuum packaging during the irradiation process, provided excellent radiation resistance (20.9% improvement) in contrast to the traditional method. PMID:24863239

  10. Effects of temperature, packaging and electron beam irradiation processing conditions on the property behaviour of Poly (ether-block-amide) blends.

    PubMed

    Murray, Kieran A; Kennedy, James E; McEvoy, Brian; Vrain, Olivier; Ryan, Damien; Cowman, Richard; Higginbotham, Clement L

    2014-06-01

    The radiation stability of Poly (ether-block-amide) (PEBA) blended with a multifunctional phenolic antioxidant and a hindered amide light stabiliser was examined under various temperatures, packaging and electron beam processing conditions. FTIR revealed that there were slight alterations to the PEBA before irradiation; however, these became more pronounced following irradiation. The effect of varying the temperature, packaging and processing conditions on the resultant PEBA properties was apparent. For example, rheology demonstrated that the structural properties could be enhanced by manipulating the aforementioned criteria. Mechanical testing exhibited less radiation resistance when the PEBA samples were vacuum packed and exposed to irradiation. MFI and AFM confirmed that the melting strength and surface topography could be reduced/increased depending on the conditions employed. From this study it was concluded that virgin PEBA submerged in dry ice with non-vacuum packaging during the irradiation process, provided excellent radiation resistance (20.9% improvement) in contrast to the traditional method.

  11. Improved performance of near UV light-emitting diodes with a composition-graded p-AlGaN irregular sawtooth electron-blocking layer

    NASA Astrophysics Data System (ADS)

    Qin, Ping; Song, Wei-Dong; Hu, Wen-Xiao; Zhang, Yuan-Wen; Zhang, Chong-Zhen; Wang, Ru-Peng; Zhao, Liang-Liang; Xia, Chao; Yuan, Song-Yang; Yin, Yi-an; Li, Shu-Ti; Su, Shi-Chen

    2016-08-01

    We investigate the performances of the near-ultraviolet (about 350 nm–360 nm) light-emitting diodes (LEDs) each with specifically designed irregular sawtooth electron blocking layer (EBL) by using the APSYS simulation program. The internal quantum efficiencies (IQEs), light output powers, carrier concentrations in the quantum wells, energy-band diagrams, and electrostatic fields are analyzed carefully. The results indicate that the LEDs with composition-graded p-Al x Ga1‑x N irregular sawtooth EBLs have better performances than their counterparts with stationary component p-AlGaN EBLs. The improvements can be attributed to the improved polarization field in EBL and active region as well as the alleviation of band bending in the EBL/p-AlGaN interface, which results in less electron leakage and better hole injection efficiency, thus reducing efficiency droop and enhancing the radiative recombination rate. Project supported by the National Natural Science Foundation of China (Grant Nos. 11474105 and 51172079), the Science and Technology Program of Guangdong Province, China (Grant Nos. 2015B090903078 and 2015B010105011), the Program for Changjiang Scholars and Innovative Research Team in University, China (Grant No. IRT13064), the Science and Technology Project of Guangzhou City, China (Grant No. 201607010246), and the Science and Technology Planning Project of Guangdong Province, China (Grant No. 2015A010105025).

  12. An electron-deficient small molecule accessible from sustainable synthesis and building blocks for use as a fullerene alternative in organic photovoltaics.

    PubMed

    McAfee, Seth M; Topple, Jessica M; Payne, Abby-Jo; Sun, Jon-Paul; Hill, Ian G; Welch, Gregory C

    2015-04-27

    An electron-deficient small molecule accessible from sustainable isoindigo and phthalimide building blocks was synthesized via optimized synthetic procedures that incorporate microwave-assisted synthesis and a heterogeneous catalyst for Suzuki coupling, and direct heteroarylation carbon-carbon bond forming reactions. The material was designed as a non-fullerene acceptor with the help of DFT calculations and characterized by optical, electronic, and thermal analysis. Further investigation of the material revealed a differing solid-state morphology with the use of three well-known processing conditions: thermal annealing, solvent vapor annealing and small volume fractions of 1,8-diiodooctane (DIO) additive. These unique morphologies persist in the active layer blends and have demonstrated a distinct influence on device performance. Organic photovoltaic-bulk heterojunction (OPV-BHJ) devices show an inherently high open circuit voltage (Voc ) with the best power conversion efficiency (PCE) cells reaching 1.0 V with 0.4 v/v % DIO as a processing additive.

  13. Improved performance of near UV light-emitting diodes with a composition-graded p-AlGaN irregular sawtooth electron-blocking layer

    NASA Astrophysics Data System (ADS)

    Qin, Ping; Song, Wei-Dong; Hu, Wen-Xiao; Zhang, Yuan-Wen; Zhang, Chong-Zhen; Wang, Ru-Peng; Zhao, Liang-Liang; Xia, Chao; Yuan, Song-Yang; Yin, Yi-an; Li, Shu-Ti; Su, Shi-Chen

    2016-08-01

    We investigate the performances of the near-ultraviolet (about 350 nm-360 nm) light-emitting diodes (LEDs) each with specifically designed irregular sawtooth electron blocking layer (EBL) by using the APSYS simulation program. The internal quantum efficiencies (IQEs), light output powers, carrier concentrations in the quantum wells, energy-band diagrams, and electrostatic fields are analyzed carefully. The results indicate that the LEDs with composition-graded p-Al x Ga1-x N irregular sawtooth EBLs have better performances than their counterparts with stationary component p-AlGaN EBLs. The improvements can be attributed to the improved polarization field in EBL and active region as well as the alleviation of band bending in the EBL/p-AlGaN interface, which results in less electron leakage and better hole injection efficiency, thus reducing efficiency droop and enhancing the radiative recombination rate. Project supported by the National Natural Science Foundation of China (Grant Nos. 11474105 and 51172079), the Science and Technology Program of Guangdong Province, China (Grant Nos. 2015B090903078 and 2015B010105011), the Program for Changjiang Scholars and Innovative Research Team in University, China (Grant No. IRT13064), the Science and Technology Project of Guangzhou City, China (Grant No. 201607010246), and the Science and Technology Planning Project of Guangdong Province, China (Grant No. 2015A010105025).

  14. Ionic Blocks

    ERIC Educational Resources Information Center

    Sevcik, Richard S.; Gamble, Rex; Martinez, Elizabet; Schultz, Linda D.; Alexander, Susan V.

    2008-01-01

    "Ionic Blocks" is a teaching tool designed to help middle school students visualize the concepts of ions, ionic compounds, and stoichiometry. It can also assist high school students in reviewing their subject mastery. Three dimensional blocks are used to represent cations and anions, with color indicating charge (positive or negative) and size…

  15. High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

    SciTech Connect

    Bryan, Zachary Bryan, Isaac; Sitar, Zlatko; Collazo, Ramón; Xie, Jinqiao; Mita, Seiji

    2015-04-06

    The internal quantum efficiency (IQE) of Al{sub 0.55}Ga{sub 0.45}N/AlN and Al{sub 0.55}Ga{sub 0.45}N/Al{sub 0.85}Ga{sub 0.15}N UVC MQW structures was analyzed. The use of bulk AlN substrates enabled us to undoubtedly distinguish the effect of growth conditions, such as V/III ratio, on the optical quality of AlGaN based MQWs from the influence of dislocations. At a high V/III ratio, a record high IQE of ∼80% at a carrier density of 10{sup 18 }cm{sup −3} was achieved at ∼258 nm. The high IQE was correlated with the decrease of the non-radiative coefficient A and a reduction of midgap defect luminescence, all suggesting that, in addition to dislocations, point defects are another major factor that strongly influences optical quality of AlGaN MQW structures.

  16. Anisotropic optical polarization dependence on internal strain in AlGaN epilayer grown on Al x Ga1-x N templates

    NASA Astrophysics Data System (ADS)

    Long, Hanling; Wu, Feng; Zhang, Jun; Wang, Shuai; Chen, Jingwen; Zhao, Chong; Feng, Zhe Chuan; Xu, Jintong; Li, Xiangyang; Dai, Jiangnan; Chen, Changqing

    2016-10-01

    Anisotropic optical polarization of AlGaN has been one of the major challenges responsible for the poor efficiency of AlGaN-based ultraviolet light emitting diodes (UV LEDs). In this work, we experimentally investigated the effect of internal strain on the optical polarization of AlGaN epilayers which were pseudomorphically grown on Al x Ga1-x N templates with Al composition changing from 0.1 to 0.42. High-resolution x-ray diffraction and reciprocal space mapping were conducted to determine the crystal quality and strain status. Polarization-dependent photoluminescence (PL) measurement was performed to study the degree of polarization (DOP) of light emission from lateral facet of the AlGaN epilayer. The result showed that the DOP increased from  -0.69 to  -0.24 with the in-plane strain changing from tensile status (1.19%) to compressive status (-0.70%) and it exhibited a strong dependence of the DOP on the strain. These results demonstrated that the compressive in-plane strain could facilitate TE mode emission from AlGaN, which providing a potential way to enhance the surface light emission of AlGaN-based UV LEDs via strain management of the active region.

  17. AlGaN UV LED and Photodiodes Radiation Hardness and Space Qualifications and Their Applications in Space Science and High Energy Density Physics

    SciTech Connect

    Sun, K. X.

    2011-05-31

    This presentation provides an overview of robust, radiation hard AlGaN optoelectronic devices and their applications in space exploration & high energy density physics. Particularly, deep UV LED and deep UV photodiodes are discussed with regard to their applications, radiation hardness and space qualification. AC charge management of UV LED satellite payload instruments, which were to be launched in late 2012, is covered.

  18. Synchrotron-based XPS studies of AlGaN and GaN surface chemistry and its relationship to ion sensor behaviour

    NASA Astrophysics Data System (ADS)

    Khir, Farah Liyana Muhammad; Myers, Matthew; Podolska, Anna; Sanders, Tarun Maruthi; Baker, Murray V.; Nener, Brett D.; Parish, Giacinta

    2014-09-01

    Soft X-ray photoelectron spectroscopy was used to investigate the fundamental surface chemistry of both AlGaN and GaN surfaces in the context of understanding the behaviour of AlGaN/GaN heterostructures as chemical field-effect transistor (CHEMFET) ion sensors. AlGaN and GaN samples were subjected to different methods of oxide growth (native oxide and thermally grown oxide) and chemical treatment conditions. Our investigations indicate that the etching of the oxide layer is more pronounced with AlGaN compared to GaN. Also, we observed that chloride ions have a greater tendency to attach to the GaN surface relative to the AlGaN surface. Furthermore, chloride ions are comparatively more prevalent on surfaces treated with 5% HCl acid solution. The concentration of chloride ions is even higher on the HCl treated native oxide surface resulting in a very clear deconvolution of the Cl 2p1/2 and Cl 2p3/2 peaks. For GaN and AlGaN surfaces, a linear response (e.g. source-drain current) is typically seen with variation in pH of buffered solutions with constant reference electrode voltage at the surface gate; however, an inverted bath-tub type response (e.g. a maximum at neutral pH and lower values at pH values away from neutral) and a general tendency to negative charge selectivity has been also widely reported. We have shown that our XPS investigations are consistent with the different sensor response reported in the literature for these CHEMFET devices and may help to explain the differing response of these materials.

  19. High root temperature blocks both linear and cyclic electron transport in the dark during chilling of the leaves of rice seedlings.

    PubMed

    Suzuki, Kensaku; Ohmori, Yukimi; Ratel, Emilien

    2011-09-01

    The most photosynthetically active leaves of rice seedlings were severely damaged when shoots but not roots were chilled (10°C/25°C, respectively), but no such injury was observed when the whole seedling was chilled (10°C/10°C). To elucidate the mechanisms, we compared the photosynthetic characteristics of the seedlings during the dark chilling treatments. Simultaneous analyses of Chl fluorescence and the change in absorbance of P700 showed that electron transport almost disappeared in both PSII and PSI in the 10°C/25°C leaves, whereas the electron transport rate in PSI in the 10°C/10°C leaves was similar to or higher than that in non-chilled control leaves. Light-induced non-photochemical quenching in PSII was inhibited in the 10°C/25°C leaves, occurring at only half the level in the 10°C/10°C leaves, whereas non-light-induced non-photochemical quenching remained high in the 10°C/25°C leaves. The light induction of Chl a fluorescence (OJIP curves) in the 10°C/25°C leaves was similar to that in leaves treated with DCMU. The fluorescence decay after a single turnover saturating flash in the 10°C/25°C leaves was much slower than in the 10°C/10°C leaves. In vivo analyses of the 550-515 nm difference signal indicated decreased formation of a proton gradient across the thylakoid membrane and decreased zeaxanthin formation in the 10°C/25°C leaves. Our results suggest that electron transport was blocked between Q(A) and Q(B) in the dark 10°C/25°C leaves, but without irreversible damage to the components of this system. The consequent light-dependent losses of electron transport, proton gradient formation across the thylakoids and thermal dissipation may therefore be responsible for the visible injury. PMID:21803813

  20. The influence of quaternary electron blocking layer on the performance characteristics of intracavity-contacted oxide-confined InGaN-based vertical cavity surface emitting lasers

    NASA Astrophysics Data System (ADS)

    Goharrizi, A. Zandi; Alahyarizadeh, Gh.; Hassan, Z.; Hassan, H. Abu

    2015-11-01

    The effect of electron blocking layer (EBL) on the performance characteristics of InGaN-based vertical cavity surface emitting lasers (VCSELs) was numerically investigated using an integrated system engineering technical computer aided design (ISE TCAD) simulation program. Simulation results indicated that the performance characteristics of InGaN quantum well VCSEL were improved by the ternary Al0.17Ga0.83N EBL. Better performance was also obtained when Al0.17Ga0.83N EBL was replaced by a polarization-matched Al0.275In0.115Ga0.61N EBL having the same energy bandgap. The quaternary EBL enhances the output power and differential quantum efficiency (DQE) as well as reduces the threshold current compared with the ternary EBL. Enhancement in the value of the optical intensity was also observed in the VCSEL structure with quaternary EBL. Furthermore, the effect of Al composition of AlInGaN EBL on the performance of InGaN-based VCSEL structure that uses the quaternary AlInGaN EBL was studied. In mole fraction was 0.115, Al mole fraction changed from 0.260 to 0.290 by step 0.005, and optimum performance was achieved in 0.275 Al mole fraction of AlInGaN EBL.

  1. High-performance InGaN-based green light-emitting diodes with quaternary InAlGaN/GaN superlattice electron blocking layer.

    PubMed

    Tzou, An-Jye; Lin, Da-Wei; Yu, Chien-Rong; Li, Zhen-Yu; Liao, Yu-Kuang; Lin, Bing-Cheng; Huang, Jhih-Kai; Lin, Chien-Chung; Kao, Tsung Sheng; Kuo, Hao-Chung; Chang, Chun-Yen

    2016-05-30

    In this study, high-performance InGaN-based green light-emitting diodes (LEDs) with a quaternary InAlGaN/GaN superlattice electron blocking layer (QSL-EBL) have been demonstrated. The band structural simulation was employed to investigate the electrostatic field and carriers distribution, show that the efficiency and droop behavior can be intensively improved by using a QSL-EBL in LEDs. The QSL-EBL structure can reduce the polarization-related electrostatic fields in the multiple quantum wells (MQWs), leading to a smoother band diagram and a more uniform carriers distribution among the quantum wells under forward bias. In comparison with green LEDs with conventional bulk-EBL structure, the light output power of LEDs with QSL-EBL was greatly enhanced by 53%. The efficiency droop shows only 30% at 100 A/cm2 comparing to its peak value, suggesting that the QSL-EBL LED is promising for future white lighting with high performance. PMID:27410067

  2. Neuromuscular block

    PubMed Central

    Bowman, W C

    2006-01-01

    Descriptions of the South American arrow poisons known as curares were reported by explorers in the 16th century, and their site of action in producing neuromuscular block was determined by Claude Bernard in the mid-19th century. Tubocurarine, the most important curare alkaloid, played a large part in experiments to determine the role of acetylcholine in neuromuscular transmission, but it was not until after 1943 that neuromuscular blocking drugs became established as muscle relaxants for use during surgical anaesthesia. Tubocurarine causes a number of unwanted effects, and there have been many attempts to replace it. The available drugs fall into two main categories: the depolarising blocking drugs and the nondepolarising blocking drugs. The former act by complex mixed actions and are now obsolete with the exception of suxamethonium, the rapid onset and brief duration of action of which remain useful for intubation at the start of surgical anaesthesia. The nondepolarising blocking drugs are reversible acetylcholine receptor antagonists. The main ones are the atracurium group, which possess a built-in self-destruct mechanism that makes them especially useful in kidney or liver failure, and the vecuronium group, which are especially free from unwanted side effects. Of this latter group, the compound rocuronium is of especial interest because its rapid onset of action allows it to be used for intubation, and there is promise that its duration of action may be rapidly terminated by a novel antagonist, a particular cyclodextrin, that chelates the drug, thereby removing it from the acetylcholine receptors. PMID:16402115

  3. Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers

    NASA Astrophysics Data System (ADS)

    Podlipskas, Ž.; Aleksiejūnas, R.; Kadys, A.; Mickevičius, J.; Jurkevičius, J.; Tamulaitis, G.; Shur, M.; Shatalov, M.; Yang, J.; Gaska, R.

    2016-04-01

    Dynamics of radiative and nonradiative recombination of non-equilibrium carriers is investigated in thick AlGaN epitaxial layers with Al content ranging from 0.11 to 0.71. The internal quantum efficiency (IQE) in the epilayers was obtained using two approaches: either estimated from PL measurements or calculated using the recombination coefficients of a simple ABC model, retrieved by fitting the kinetics of light induced transient gratings (LITG). At photoexcited carrier densities below ~1019 cm-3, both approaches provided similar IQE values indicating that the simple ABC model is applicable to analyze carrier recombination at such carrier densities. The increase in IQE at higher carrier densities slowed down for the values extracted from PL considerably faster than for those obtained from LITG transients. This discrepancy is explained in terms of the mixed nature of the rate coefficient B caused by the onset of the density-activated nonradiative recombination at high carrier densities.

  4. Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

    SciTech Connect

    Guo, Wei Bryan, Zachary; Kirste, Ronny; Bryan, Isaac; Hussey, Lindsay; Bobea, Milena; Haidet, Brian; Collazo, Ramón; Sitar, Zlatko; Xie, Jinqiao; Mita, Seiji; Gerhold, Michael

    2014-03-14

    Optical gain spectra for ∼250 nm stimulated emission were compared in three different AlGaN-based structures grown on single crystalline AlN substrates: a single AlGaN film, a double heterostructure (DH), and a Multiple Quantum Well (MQW) structure; respective threshold pumping power densities of 700, 250, and 150 kW/cm{sup 2} were observed. Above threshold, the emission was transverse-electric polarized and as narrow as 1.8 nm without a cavity. The DH and MQW structures showed gain values of 50–60 cm{sup −1} when pumped at 1 MW/cm{sup 2}. The results demonstrated the excellent optical quality of the AlGaN-based heterostructures grown on AlN substrates and their potential for realizing electrically pumped sub-280 nm laser diodes.

  5. Electron

    NASA Astrophysics Data System (ADS)

    Springford, Michael

    1997-03-01

    1. J. J. Thomson and the discovery of the electron A. B. P. Pippard; 2. The isolated electron W. N. Cottingham; 3. The relativistic electron D. I. Olive; 4. The electron glue B. L. Gyorffy; 5. The electron fluid P. Coleman; 6. The magnetic electron G. G. Lonzarich; 7. The paired electron A. J. Leggett; 8. The heavy electron M. Springford; 9. The coherent electron Y. Imry and M. Peskin; 10. The composite electron R. Nicholas; 11. The electron in the cosmos M. S. Longair.

  6. Electron

    NASA Astrophysics Data System (ADS)

    Springford, Michael

    2008-12-01

    1. J. J. Thomson and the discovery of the electron A. B. P. Pippard; 2. The isolated electron W. N. Cottingham; 3. The relativistic electron D. I. Olive; 4. The electron glue B. L. Gyorffy; 5. The electron fluid P. Coleman; 6. The magnetic electron G. G. Lonzarich; 7. The paired electron A. J. Leggett; 8. The heavy electron M. Springford; 9. The coherent electron Y. Imry and M. Peskin; 10. The composite electron R. Nicholas; 11. The electron in the cosmos M. S. Longair.

  7. Block People.

    ERIC Educational Resources Information Center

    Peterson, Rayma

    1999-01-01

    Discusses an activity in which students in an after-school art class drew one another on pieces of 2-by-4 scrap lumber in order to create a class portrait in three dimensions. Stresses that the portraits on the wood blocks were done in-the-round, or each side was covered. (CMK)

  8. Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm

    NASA Astrophysics Data System (ADS)

    Li, X.; Le Gac, G.; Bouchoule, S.; El Gmili, Y.; Patriarche, G.; Sundaram, S.; Disseix, P.; Réveret, F.; Leymarie, J.; Streque, J.; Genty, F.; Salvestrini, J.-P.; Dupuis, R. D.; Li, X.-H.; Voss, P. L.; Ougazzaden, A.

    2015-12-01

    10-period Al0.57Ga0.43N/Al0.38Ga0.62N multi-quantum wells (MQWs) were grown on a relaxed Al0.58Ga0.42N buffer on AlN templates on sapphire. The threading dislocations and V-pits were characterized and their origin is discussed. The influence of V-pits on the structural quality of the MQWs and on optical emission at 280 nm was analyzed. It was observed that near-surface V-pits were always associated with grain boundaries consisting of edge threading dislocations originating from the AlN/Al2O3 interface. Although the high density of V-pits disrupted MQWs growth, it did not affect the internal quantum efficiency which was measured to be ~1% at room temperature even when V-pit density was increased from 7×107 cm-2 to 2×109 cm-2. The results help to understand the origin, propagation and influences of the typical defects in AlGaN MQWs grown on AlN/Al2O3 templates which may lead to further improvement of the performance of DUV devices.

  9. An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission

    PubMed Central

    Lee, Jong Won; Kim, Dong Yeong; Park, Jun Hyuk; Schubert, E. Fred; Kim, Jungsub; Lee, Jinsub; Kim, Yong-Il; Park, Youngsoo; Kim, Jong Kyu

    2016-01-01

    While there is an urgent need for semiconductor-based efficient deep ultraviolet (DUV) sources, the efficiency of AlGaN DUV light-emitting diodes (LEDs) remains very low because the extraction of DUV photons is significantly limited by intrinsic material properties of AlGaN. Here, we present an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes for maximizing the power conversion efficiency. PMID:26935402

  10. An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission

    NASA Astrophysics Data System (ADS)

    Lee, Jong Won; Kim, Dong Yeong; Park, Jun Hyuk; Schubert, E. Fred; Kim, Jungsub; Lee, Jinsub; Kim, Yong-Il; Park, Youngsoo; Kim, Jong Kyu

    2016-03-01

    While there is an urgent need for semiconductor-based efficient deep ultraviolet (DUV) sources, the efficiency of AlGaN DUV light-emitting diodes (LEDs) remains very low because the extraction of DUV photons is significantly limited by intrinsic material properties of AlGaN. Here, we present an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes for maximizing the power conversion efficiency.

  11. An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission.

    PubMed

    Lee, Jong Won; Kim, Dong Yeong; Park, Jun Hyuk; Schubert, E Fred; Kim, Jungsub; Lee, Jinsub; Kim, Yong-Il; Park, Youngsoo; Kim, Jong Kyu

    2016-01-01

    While there is an urgent need for semiconductor-based efficient deep ultraviolet (DUV) sources, the efficiency of AlGaN DUV light-emitting diodes (LEDs) remains very low because the extraction of DUV photons is significantly limited by intrinsic material properties of AlGaN. Here, we present an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes for maximizing the power conversion efficiency. PMID:26935402

  12. An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission.

    PubMed

    Lee, Jong Won; Kim, Dong Yeong; Park, Jun Hyuk; Schubert, E Fred; Kim, Jungsub; Lee, Jinsub; Kim, Yong-Il; Park, Youngsoo; Kim, Jong Kyu

    2016-03-03

    While there is an urgent need for semiconductor-based efficient deep ultraviolet (DUV) sources, the efficiency of AlGaN DUV light-emitting diodes (LEDs) remains very low because the extraction of DUV photons is significantly limited by intrinsic material properties of AlGaN. Here, we present an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes for maximizing the power conversion efficiency.

  13. Temperature and doping dependent changes in surface recombination during UV illumination of (Al)GaN bulk layers

    NASA Astrophysics Data System (ADS)

    Netzel, Carsten; Jeschke, Jörg; Brunner, Frank; Knauer, Arne; Weyers, Markus

    2016-09-01

    We have studied the effect of continuous illumination with above band gap energy on the emission intensity of polar (Al)GaN bulk layers during the photoluminescence experiments. A temporal change in emission intensity on time scales from seconds to hours is based on the modification of the semiconductor surface states and the surface recombination by the incident light. The temporal behavior of the photoluminescence intensity varies with the parameters such as ambient atmosphere, pretreatment of the surface, doping density, threading dislocation density, excitation power density, and sample temperature. By means of temperature-dependent photoluminescence measurements, we observed that at least two different processes at the semiconductor surface affect the non-radiative surface recombination during illumination. The first process leads to an irreversible decrease in photoluminescence intensity and is dominant around room temperature, and the second process leads to a delayed increase in intensity and becomes dominant around T = 150-200 K. Both processes become slower when the sample temperature decreases from room temperature. They cease for T < 150 K. Stable photoluminescence intensity at arbitrary sample temperature was obtained by passivating the analyzed layer with an epitaxially grown AlN cap layer.

  14. Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes

    SciTech Connect

    Reich, Christoph Guttmann, Martin; Wernicke, Tim; Mehnke, Frank; Kuhn, Christian; Feneberg, Martin; Goldhahn, Rüdiger; Rass, Jens; Kneissl, Michael; Lapeyrade, Mickael; Einfeldt, Sven; Knauer, Arne; Kueller, Viola; Weyers, Markus

    2015-10-05

    The optical polarization of emission from ultraviolet (UV) light emitting diodes (LEDs) based on (0001)-oriented Al{sub x}Ga{sub 1−x}N multiple quantum wells (MQWs) has been studied by simulations and electroluminescence measurements. With increasing aluminum mole fraction in the quantum well x, the in-plane intensity of transverse-electric (TE) polarized light decreases relative to that of the transverse-magnetic polarized light, attributed to a reordering of the valence bands in Al{sub x}Ga{sub 1−x}N. Using k ⋅ p theoretical model calculations, the AlGaN MQW active region design has been optimized, yielding increased TE polarization and thus higher extraction efficiency for bottom-emitting LEDs in the deep UV spectral range. Using (i) narrow quantum wells, (ii) barriers with high aluminum mole fractions, and (iii) compressive growth on patterned aluminum nitride sapphire templates, strongly TE-polarized emission was observed at wavelengths as short as 239 nm.

  15. Performance enhancement of blue light-emitting diodes with InGaN/GaN multi-quantum wells grown on Si substrates by inserting thin AlGaN interlayers

    NASA Astrophysics Data System (ADS)

    Kimura, Shigeya; Yoshida, Hisashi; Uesugi, Kenjiro; Ito, Toshihide; Okada, Aoi; Nunoue, Shinya

    2016-09-01

    We have grown blue light-emitting diodes (LEDs) having InGaN/GaN multi-quantum wells (MQWs) with thin AlyGa1-yN (0 < y < 0.3) interlayers on Si(111) substrates. It was found by high-resolution transmission electron microscopy observations and three-dimensional atom probe analysis that 1-nm-thick interlayers with an AlN mole fraction of less than y = 0.3 were continuously formed between GaN barriers and InGaN wells, and that the AlN mole fraction up to y = 0.15 could be consistently controlled. The external quantum efficiency of the blue LED was enhanced in the low-current-density region (≤45 A/cm2) but reduced in the high-current-density region by the insertion of the thin Al0.15Ga0.85N interlayers in the MQWs. We also found that reductions in both forward voltage and wavelength shift with current were achieved by inserting the interlayers even though the inserted AlGaN layers had potential higher than that of the GaN barriers. The obtained peak wall-plug efficiency was 83% at room temperature. We suggest that the enhanced electroluminescence (EL) performance was caused by the introduction of polarization-induced hole carriers in the InGaN wells on the side adjacent to the thin AlGaN/InGaN interface and efficient electron carrier transport through multiple wells. This model is supported by temperature-dependent EL properties and band-diagram simulations. We also found that inserting the interlayers brought about a reduction in the Shockley-Read-Hall nonradiative recombination component, corresponding to the shrinkage of V-defects. This is another conceivable reason for the observed performance enhancement.

  16. Improved characteristics of ultraviolet AlGaN multiple-quantum-well laser diodes with step-graded quantum barriers close to waveguide layers

    NASA Astrophysics Data System (ADS)

    Cai, Xuefen; Li, Shuping; Kang, Junyong

    2016-09-01

    Ultraviolet AlGaN multiple-quantum-well laser diodes (LDs) with step-graded quantum barriers (QBs) instead of conventional first and last QBs close to waveguide layers are proposed. The characteristics of this type of laser diodes are numerically investigated by using the software PICS3D and it is found that the performances of these LDs are greatly improved. The results indicates that the structure with step-graded QBs exhibits higher output light power, slope efficiency and emission intensity, as well as lower series resistance and threshold current density under the identical condition, compared with conventional LD structure.

  17. Localized surface plasmon-enhanced light emission using platinum nanorings in deep ultraviolet-emitting AlGaN quantum wells.

    PubMed

    Shin, Hee Woong; Son, Kyung Rock; Kim, Tae Geun

    2016-01-01

    We report the enhancement of deep ultraviolet emissions from AlGaN-based quantum wells (QWs) using energy-matched localized surface plasmons (LSPs) in platinum (Pt) nanoring arrays. The peak resonances of the extinction spectra were shifted to the red spectral region as the nanoring diameters increased, and the Pt nanorings with a diameter of 325 nm exhibited strong photoluminescence (PL) resonance at 279 nm. The emission enhancement ratio was calculated to be 304% in peak PL intensity when compared to that of the bare AlGaN QWs; this is attributed to the strong coupling of QWs with LSPs from the Pt nanorings.

  18. Spintronics: Conceptual Building Blocks

    NASA Astrophysics Data System (ADS)

    Ansermet, J.-Ph.

    The purpose of this introduction to spintronics is to provide some elementary description of its conceptual building blocks. Thus, it is intended for a newcomer to the field. After recalling rudimentary descriptions of spin precession and spin relaxation, spin-dependent transport is treated within the Boltzmann formalism. This suffices to introduce key notions such as the spin asymmetry of the conductivities in the two-current model, the spin diffusion length, and spin accumulation. Two basic mechanisms of spin relaxation are then presented, one arising from spin-orbit scattering and the other from electron-magnon collisions. Finally, the action of a spin-polarized current on magnetization is presented in a thermodynamics framework. This introduces the notion of spin torque and the characteristic length scale over which the transverse spin polarization of conduction electron decays as it is injected into a magnet.

  19. Direct detection of a transport-blocking trap in a nanoscaled silicon single-electron transistor by radio-frequency reflectometry

    SciTech Connect

    Villis, B. J.; Sanquer, M.; Jehl, X.; Orlov, A. O.; Barraud, S.; Vinet, M.; Fay, P.; Snider, G.

    2014-06-09

    The continuous downscaling of transistors results in nanoscale devices which require fewer and fewer charged carriers for their operation. The ultimate charge controlled device, the single-electron transistor (SET), controls the transfer of individual electrons. It is also the most sensitive electrometer, and as a result the electron transport through it can be dramatically affected by nearby charges. Standard direct-current characterization techniques, however, are often unable to unambiguously detect and resolve the origin of the observed changes in SET behavior arising from changes in the charge state of a capacitively coupled trap. Using a radio-frequency (RF) reflectometry technique, we are able to unequivocally detect this process, in very close agreement with modeling of the trap's occupation probability.

  20. High-performance AlGaN metal-semiconductor-metal solar-blind ultraviolet photodetectors by localized surface plasmon enhancement

    NASA Astrophysics Data System (ADS)

    Zhang, Wei; Xu, Jin; Ye, Wei; Li, Yang; Qi, Zhiqiang; Dai, Jiangnan; Wu, Zhihao; Chen, Changqing; Yin, Jun; Li, Jing; Jiang, Hao; Fang, Yanyan

    2015-01-01

    AlGaN-based solar-blind ultraviolet photodetectors have attractive potential applications in the fields of missile plume detection, biochemical sensing, solar astronomy, etc. In this work, significant deep ultraviolet detection enhancement is demonstrated on AlGaN-based metal-semiconductor-metal (MSM) solar-blind ultraviolet photodetectors by introducing the coupling of localized surface plasmon from Al nanoparticles with the high-Al-content AlGaN epilayer. The size-controlled Al nanoparticle arrays fabricated by nanosphere lithography can not only reduce the detectors' dark current but also bring about greatly enhanced responsivity. The peak responsivity of AlGaN-based MSM solar-blind ultraviolet photodetectors with Al nanoparticles can reach 2.34 A/W at 269 nm under 20 V bias, enhanced more than 25 times than that without Al nanoparticles. Our approach shows an efficient fabrication technique of high-performance and low-cost plasmonic enhanced AlGaN solar-blind MSM ultraviolet photodetectors.

  1. Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate

    SciTech Connect

    Li, Xiao-Hang E-mail: dupuis@gatech.edu; Kao, Tsung-Ting; Satter, Md. Mahbub; Shen, Shyh-Chiang; Yoder, P. Douglas; Detchprohm, Theeradetch; Dupuis, Russell D. E-mail: dupuis@gatech.edu; Wei, Yong O.; Wang, Shuo; Xie, Hongen; Fischer, Alec M.; Ponce, Fernando A.

    2015-01-26

    We demonstrate transverse-magnetic (TM) dominant deep-ultraviolet (DUV) stimulated emission from photo-pumped AlGaN multiple-quantum-well lasers grown pseudomorphically on an AlN/sapphire template by means of photoluminescence at room temperature. The TM-dominant stimulated emission was observed at wavelengths of 239, 242, and 243 nm with low thresholds of 280, 250, and 290 kW/cm{sup 2}, respectively. In particular, the lasing wavelength of 239 nm is shorter compared to other reports for AlGaN lasers grown on foreign substrates including sapphire and SiC. The peak wavelength difference between the transverse-electric (TE)-polarized emission and TM-polarized emission was approximately zero for the lasers in this study, indicating the crossover of crystal-field split-off hole and heavy-hole valence bands. The rapid variation of polarization between TE- and TM-dominance versus the change in lasing wavelength from 243 to 249 nm can be attributed to a dramatic change in the TE-to-TM gain coefficient ratio for the sapphire-based DUV lasers in the vicinity of TE-TM switch.

  2. Measurement and simulation of top- and bottom-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors with high external quantum efficiencies

    SciTech Connect

    Brendel, Moritz Helbling, Markus; Knigge, Andrea; Brunner, Frank; Weyers, Markus

    2015-12-28

    A comprehensive study on top- and bottom-illuminated Al{sub 0.5}Ga{sub 0.5}N/AlN metal-semiconductor-metal (MSM) photodetectors having different AlGaN absorber layer thickness is presented. The measured external quantum efficiency (EQE) shows pronounced threshold and saturation behavior as a function of applied bias voltage up to 50 V reaching about 50% for 0.1 μm and 67% for 0.5 μm thick absorber layers under bottom illumination. All experimental findings are in very good accordance with two-dimensional drift-diffusion modeling results. By taking into account macroscopic polarization effects in the hexagonal metal-polar +c-plane AlGaN/AlN heterostructures, new insights into the general device functionality of AlGaN-based MSM photodetectors are obtained. The observed threshold/saturation behavior is caused by a bias-dependent extraction of photoexcited holes from the Al{sub 0.5}Ga{sub 0.5}N/AlN interface. While present under bottom illumination for any AlGaN layer thickness, under top illumination this mechanism influences the EQE-bias characteristics only for thin layers.

  3. Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates

    SciTech Connect

    Bryan, Zachary Bryan, Isaac; Sitar, Zlatko; Collazo, Ramón; Mita, Seiji; Tweedie, James

    2015-06-08

    Since the band ordering in AlGaN has a profound effect on the performance of UVC light emitting diodes (LEDs) and even determines the feasibility of surface emitting lasers, the polarization properties of emitted light from c-oriented AlGaN and AlGaN-based laser structures were studied over the whole composition range, as well as various strain states, quantum confinements, and carrier densities. A quantitative relationship between the theoretical valence band separation, determined using k•p theory, and the experimentally measured degree of polarization is presented. Next to composition, strain was found to have the largest influence on the degree of polarization while all other factors were practically insignificant. The lowest crossover point from the transverse electric to transverse magnetic polarized emission of 245 nm was found for structures pseudomorphically grown on AlN substrates. This finding has significant implications toward the efficiency and feasibility of surface emitting devices below this wavelength.

  4. Types of Heart Block

    MedlinePlus

    ... Block Explore Heart Block What Is... Electrical System & EKG Results Types Causes Who Is at Risk Signs & ... the P and the R waves on the EKG (electrocardiogram). First-degree heart block may not cause ...

  5. How Young Children Learn to Program with Sensor, Action, and Logic Blocks

    ERIC Educational Resources Information Center

    Wyeth, Peta

    2008-01-01

    Electronic Blocks are a new programming environment designed specifically for children aged between 3 and 8 years. These physical, stackable blocks include sensor blocks, action blocks, and logic blocks. By connecting these blocks, children can program a wide variety of structures that interact with one another and the environment. Electronic…

  6. Blanket Gate Would Address Blocks Of Memory

    NASA Technical Reports Server (NTRS)

    Lambe, John; Moopenn, Alexander; Thakoor, Anilkumar P.

    1988-01-01

    Circuit-chip area used more efficiently. Proposed gate structure selectively allows and restricts access to blocks of memory in electronic neural-type network. By breaking memory into independent blocks, gate greatly simplifies problem of reading from and writing to memory. Since blocks not used simultaneously, share operational amplifiers that prompt and read information stored in memory cells. Fewer operational amplifiers needed, and chip area occupied reduced correspondingly. Cost per bit drops as result.

  7. Predicted bond length variation in wurtzite and zinc-blende InGaN and AlGaN alloys

    NASA Astrophysics Data System (ADS)

    Mattila, T.; Zunger, Alex

    1999-01-01

    Valence force field simulations utilizing large supercells are used to investigate the bond lengths in wurtzite and zinc-blende InxGa1-xN and AlxGa1-xN random alloys. We find that (i) while the first-neighbor cation-anion shell is split into two distinct values in both wurtzite and zinc-blende alloys (RGa-N1≠RIn-N1), the second-neighbor cation-anion bonds are equal (RGa-N2=RIn-N2). (ii) The second-neighbor cation-anion bonds exhibit a crucial difference between wurtzite and zinc-blende binary structures: in wurtzite we find two bond distances which differ in length by 13% while in the zinc-blende structure there is only one bond length. This splitting is preserved in the alloy, and acts as a fingerprint, distinguishing the wurtzite from the zinc-blende structure. (iii) The small splitting of the first-neighbor cation-anion bonds in the wurtzite structure due to nonideal c/a ratio is preserved in the alloy, but is obscured by the bond length broadening. (iv) The cation-cation bond lengths exhibit three distinct values in the alloy (Ga-Ga, Ga-In, and In-In), while the anion-anion bonds are split into two values corresponding to N-Ga-N and N-In-N. (v) The cation-related splitting of the bonds and alloy broadening are considerably larger in InGaN alloy than in AlGaN alloy due to larger mismatch between the binary compounds. (vi) The calculated first-neighbor cation-anion and cation-cation bond lengths in InxGa1-xN alloy are in good agreement with the available experimental data. The remaining bond lengths are provided as predictions. In particular, the predicted splitting for the second-neighbor cation-anion bonds in the wurtzite structure awaits experimental testing.

  8. Inductively coupled plasma–reactive ion etching of c- and a-plane AlGaN over the entire Al composition range: Effect of BCl{sub 3} pretreatment in Cl{sub 2}/Ar plasma chemistry

    SciTech Connect

    Shah, Amit P.; Laskar, Masihhur R.; Azizur Rahman, A.; Gokhale, Maheshwar R.; Bhattacharya, Arnab

    2013-11-15

    Inductively coupled plasma (ICP)–reactive ion etching (RIE) patterning is a standard processing step for UV and optical photonic devices based on III-nitride materials. There is little research on ICP-RIE of high Al-content AlGaN alloys and for nonpolar nitride orientations. The authors present a comprehensive study of the ICP-RIE of c- and a-plane AlGaN in Cl{sub 2}/Ar plasma over the entire Al composition range. The authors find that the etch rate decreases in general with increasing Al content, with different behavior for c- and a-plane AlGaN. They also study the effect of BCl{sub 3} deoxidizing plasma pretreatment. An ICP deoxidizing BCl{sub 3} plasma with the addition of argon is more efficient in removal of surface oxides from Al{sub x}Ga{sub 1−x}N than RIE alone. These experiments show that Al{sub x}Ga{sub 1−x}N etching is affected by the higher binding energy of AlN and the higher affinity of oxygen to aluminum compared to gallium, with oxides on a-plane AlGaN more difficult to etch as compared to oxides on c-plane AlGaN, specifically for high Al composition materials. The authors achieve reasonably high etch rate (∼350 nm/min) for high Al-content materials with a smooth surface morphology at a low DC bias of ∼−45 VDC.

  9. Creative Construction: Unit Blocks.

    ERIC Educational Resources Information Center

    Texas Child Care, 1999

    1999-01-01

    Describes the use of unit blocks with young children in early childhood education (ECE) settings to expand all areas of the curriculum. Discusses the origin of blocks in ECE programs, presents developmental stages of block play, describes children's building styles, and makes recommendations for getting started in block play for children of…

  10. A non-fullerene electron acceptor based on fluorene and diketopyrrolopyrrole building blocks for solution-processable organic solar cells with an impressive open-circuit voltage.

    PubMed

    Patil, Hemlata; Zu, Wang Xi; Gupta, Akhil; Chellappan, Vijila; Bilic, Ante; Sonar, Prashant; Rananaware, Anushri; Bhosale, Sidhanath V; Bhosale, Sheshanath V

    2014-11-21

    A novel solution-processable non-fullerene electron acceptor 6,6'-(5,5'-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(thiophene-5,2-diyl))bis(2,5-bis(2-ethylhexyl)-3-(thiophen-2-yl)pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione) (DPP1) based on fluorene and diketopyrrolopyrrole conjugated moieties was designed, synthesized and fully characterized. DPP1 exhibited excellent solubility and high thermal stability which are essential for easy processing. Upon using DPP1 as an acceptor with the classical electron donor poly(3-hexylthiophene), solution processable bulk-heterojunction solar cells afforded a power conversion efficiency of 1.2% with a high open-circuit voltage (1.1 V). As per our knowledge, this value of open circuit voltage is one of the highest values reported so far for a bulk-heterojunction device using DPP1 as a non-fullerene acceptor.

  11. Testing block subdivision algorithms on block designs

    NASA Astrophysics Data System (ADS)

    Wiseman, Natalie; Patterson, Zachary

    2016-01-01

    Integrated land use-transportation models predict future transportation demand taking into account how households and firms arrange themselves partly as a function of the transportation system. Recent integrated models require parcels as inputs and produce household and employment predictions at the parcel scale. Block subdivision algorithms automatically generate parcel patterns within blocks. Evaluating block subdivision algorithms is done by way of generating parcels and comparing them to those in a parcel database. Three block subdivision algorithms are evaluated on how closely they reproduce parcels of different block types found in a parcel database from Montreal, Canada. While the authors who developed each of the algorithms have evaluated them, they have used their own metrics and block types to evaluate their own algorithms. This makes it difficult to compare their strengths and weaknesses. The contribution of this paper is in resolving this difficulty with the aim of finding a better algorithm suited to subdividing each block type. The proposed hypothesis is that given the different approaches that block subdivision algorithms take, it's likely that different algorithms are better adapted to subdividing different block types. To test this, a standardized block type classification is used that consists of mutually exclusive and comprehensive categories. A statistical method is used for finding a better algorithm and the probability it will perform well for a given block type. Results suggest the oriented bounding box algorithm performs better for warped non-uniform sites, as well as gridiron and fragmented uniform sites. It also produces more similar parcel areas and widths. The Generalized Parcel Divider 1 algorithm performs better for gridiron non-uniform sites. The Straight Skeleton algorithm performs better for loop and lollipop networks as well as fragmented non-uniform and warped uniform sites. It also produces more similar parcel shapes and patterns.

  12. Influence of optical polarization on the improvement of light extraction efficiency from reflective scattering structures in AlGaN ultraviolet light-emitting diodes

    SciTech Connect

    Wierer, J. J. Allerman, A. A.; Montaño, I.; Moseley, M. W.

    2014-08-11

    The improvement in light extraction efficiency from reflective scattering structures in AlGaN ultraviolet light-emitting diodes (UVLEDs) emitting at ∼270 nm is shown to be influenced by optical polarization. Three UVLEDs with different reflective scattering structures are investigated and compared to standard UVLEDs without scattering structures. The optical polarization and therefore the direction of light propagation within the various UVLEDs are altered by changes in the quantum well (QW) thickness. The improvement in light extraction efficiency of the UVLEDs with reflective scattering structures increases, compared to the UVLEDs without scattering structures, as the fraction of emitted light propagating parallel to the QW plane increases. Additionally, the light extraction efficiency increases as the average distance to the reflective scattering structures decreases.

  13. Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

    SciTech Connect

    Malinverni, M. Lamy, J.-M.; Martin, D.; Grandjean, N.; Feltin, E.; Dorsaz, J.; Castiglia, A.; Rossetti, M.; Duelk, M.; Vélez, C.

    2014-12-15

    We demonstrate state-of-the-art p-type (Al)GaN layers deposited at low temperature (740 °C) by ammonia molecular beam epitaxy (NH{sub 3}-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGaN quantum well active region. Typical p-type GaN resistivities and contact resistances are 0.4 Ω cm and 5 × 10{sup −4} Ω cm{sup 2}, respectively. As a test bed, we fabricated a hybrid laser structure emitting at 400 nm combining n-type AlGaN cladding and InGaN active region grown by metal-organic vapor phase epitaxy, with the p-doped waveguide and cladding layers grown by NH{sub 3}-MBE. Single-mode ridge-waveguide LD exhibits a threshold voltage as low as 4.3 V for an 800 × 2 μm{sup 2} ridge dimension and a threshold current density of ∼5 kA cm{sup −2} in continuous wave operation. The series resistance of the device is 6 Ω and the resistivity is 1.5 Ω cm, confirming thereby the excellent electrical properties of p-type Al{sub 0.06}Ga{sub 0.94}N:Mg despite the low growth temperature.

  14. Demonstration of InAlN/AlGaN high electron mobility transistors with an enhanced breakdown voltage by pulsed metal organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Xue, JunShuai; Zhang, JinCheng; Hao, Yue

    2016-01-01

    In this work, InAlN/AlGaN heterostructures employing wider bandgap AlGaN instead of conventional GaN channel were grown on sapphire substrate by pulsed metal organic chemical vapor deposition, where the nominal Al composition in InAlN barrier and AlGaN channel were chosen to be 83% and 5%, respectively, to achieve close lattice-matched condition. An electron mobility of 511 cm2/V s along with a sheet carrier density of 1.88 × 1013 cm-2 were revealed in the prepared heterostructures, both of which were lower compared with lattice-matched InAlN/GaN due to increased intrinsic alloy disorder scattering resulting from AlGaN channel and compressively piezoelectric polarization in barrier, respectively. While the high electron mobility transistor (HEMT) processed on these structures not only exhibited a sufficiently high drain output current density of 854 mA/mm but also demonstrated a significantly enhanced breakdown voltage of 87 V, which is twice higher than that of reported InAlN/GaN HEMT with the same device dimension, potential characteristics for high-voltage operation of GaN-based electronic devices.

  15. Learning with Large Blocks.

    ERIC Educational Resources Information Center

    Cartwright, Sally

    1990-01-01

    Discusses how large hollow blocks can meet many preschool children's learning needs through creative dramatic play, and also gives some guidelines on how these blocks can be constructed by parents and teachers. (BB)

  16. Block That Pain!

    MedlinePlus

    ... combination produces a unique effect, blocking pain-sensing neurons without impairing signals from other cells. In contrast, ... surgical procedures block activity in all types of neurons. This can cause numbness, paralysis, and other nervous ...

  17. Block copolymer investigations

    NASA Astrophysics Data System (ADS)

    Yufa, Nataliya A.

    The research presented in this thesis deals with various aspects of block copolymers on the nanoscale: their behavior at a range of temperatures, their use as scaffolds, or for creation of chemically striped surfaces, as well as the behavior of metals on block copolymers under the influence of UV light, and the healing behavior of copolymers. Invented around the time of World War II, copolymers have been used for decades due to their macroscopic properties, such as their ability to be molded without vulcanization, and the fact that, unlike rubber, they can be recycled. In recent years, block copolymers (BCPs) have been used for lithography, as scaffolds for nano-objects, to create a magnetic hard drive, as well as in photonic and other applications. In this work we used primarily atomic force microscopy (AFM) and transmission electron microscopy (TEM), described in Chapter II, to conduct our studies. In Chapter III we demonstrate a new and general method for positioning nanoparticles within nanoscale grooves. This technique is suitable for nanodots, nanocrystals, as well as DNA. We use AFM and TEM to demonstrate selective decoration. In Chapters IV and V we use AFM and TEM to study the structure of polymer surfaces coated with metals and self-assembled monolayers. We describe how the surfaces were created, exhibit their structure on the nanoscale, and prove that their macroscopic wetting properties have been altered compared to the original polymer structures. Finally, Chapters VI and VII report out in-situ AFM studies of BCP at high temperatures, made possible only recently with the invention of air-tight high-temperature AFM imaging cells. We locate the transition between disordered films and cylinders during initial ordering. Fluctuations of existing domains leading to domain coarsening are also described, and are shown to be consistent with reptation and curvature minimization. Chapter VII deals with the healing of PS-b-PMMA following AFM-tip lithography or

  18. Block Scheduling. Research Brief

    ERIC Educational Resources Information Center

    Muir, Mike

    2003-01-01

    What are the effects of block scheduling? Results of transitioning from traditional to block scheduling are mixed. Some studies indicate no change in achievement results, nor change in teachers' opinions about instructional strategies. Other studies show that block scheduling doesn't work well for Advanced Placement or Music courses, that "hard to…

  19. Blocking and associability change.

    PubMed

    Jones, Peter M; Haselgrove, Mark

    2013-07-01

    Blocking of learning about a conditioned stimulus (the "blocked" cue) occurs when it is trained alongside an additional stimulus (the "blocking" cue) that has been previously presented with the outcome. A number of theories (e.g., N. J. Mackintosh. 1975a. A Theory of Attention: Variations in the Associability of Stimuli With Reinforcement. Psychological Review, 82, 276-298; J. M. Pearce & G. Hall. 1980. A Model for Pavlovian Learning: Variation in the Effectiveness of Conditioned But Not Unconditioned Stimuli. Psychological Review, 87, 532-552) account for this attenuation in learning by proposing that attention paid to the blocked cue is restricted. In three experiments, we examined the associability of both blocked and blocking cues. In Experiment 1, rats were trained with a blocking protocol before being given a test discrimination composed of two components; one of these components required the use of the previously blocked cue as a discriminative stimulus, and the other component was soluble by using the blocking cue. To our surprise, the component that depended on the blocked cue was more readily solved than the component dependent on the blocking cue. The results of Experiments 2 and 3 suggest that this is due to the quantity of exposure that each stimulus received during initial training. Implications for theories of blocking, and more widely associative learning, are discussed.

  20. Organic photosensitive optoelectronic device having a phenanthroline exciton blocking layer

    DOEpatents

    Thompson, Mark E.; Li, Jian; Forrest, Stephen; Rand, Barry

    2011-02-22

    An organic photosensitive optoelectronic device, having an anode, a cathode, and an organic blocking layer between the anode and the cathode is described, wherein the blocking layer comprises a phenanthroline derivative, and at least partially blocks at least one of excitons, electrons, and holes.

  1. Block LU factorization

    NASA Technical Reports Server (NTRS)

    Demmel, James W.; Higham, Nicholas J.; Schreiber, Robert S.

    1992-01-01

    Many of the currently popular 'block algorithms' are scalar algorithms in which the operations have been grouped and reordered into matrix operations. One genuine block algorithm in practical use is block LU factorization, and this has recently been shown by Demmel and Higham to be unstable in general. It is shown here that block LU factorization is stable if A is block diagonally dominant by columns. Moreover, for a general matrix the level of instability in block LU factorization can be founded in terms of the condition number kappa(A) and the growth factor for Gaussian elimination without pivoting. A consequence is that block LU factorization is stable for a matrix A that is symmetric positive definite or point diagonally dominant by rows or columns as long as A is well-conditioned.

  2. Enhanced ultraviolet electroluminescence and spectral narrowing from ZnO quantum dots/GaN heterojunction diodes by using high-k HfO{sub 2} electron blocking layer

    SciTech Connect

    Mo, Xiaoming; Long, Hao; Wang, Haoning; Chen, Zhao; Wan, Jiawei; Liu, Yuping; Fang, Guojia; Li, Songzhan; Feng, Yamin; Ouyang, Yifang

    2014-08-11

    We demonstrated the capability of realizing enhanced ZnO-related UV emissions by using the low-cost and solution-processable ZnO quantum dots (QDs) with the help of a high-k HfO{sub 2} electron blocking layer (EBL) for the ZnO QDs/p-GaN light-emitting diodes (LEDs). Full-width at half maximum of the LED devices was greatly decreased from ∼110 to ∼54 nm, and recombinations related to nonradiative centers were significantly suppressed with inserting HfO{sub 2} EBL. The electroluminescence of the ZnO QDs/HfO{sub 2}/p-GaN LEDs demonstrated an interesting spectral narrowing effect with increasing HfO{sub 2} thickness. The Gaussian fitting revealed that the great enhancement of the Zn{sub i}-related emission at ∼414 nm whereas the deep suppression of the interfacial recombination at ∼477 nm should be the main reason for the spectral narrowing effect.

  3. Island custom blocking technique

    SciTech Connect

    Carabetta, R.J. )

    1988-03-01

    The technique of Island blocking is being used more frequently since the advent of our new head and neck blocking techniques and the implementation of a newly devised lung protocol. The system presented affords the mould room personnel a quick and accurate means of island block fabrication without the constant remeasuring or subtle shifting to approximate correct placement. The cookie cutter is easily implemented into any department's existing block cutting techniques. The device is easily and inexpensively made either in a machine shop or acquired by contacting the author.

  4. Protein based Block Copolymers

    PubMed Central

    Rabotyagova, Olena S.; Cebe, Peggy; Kaplan, David L.

    2011-01-01

    Advances in genetic engineering have led to the synthesis of protein-based block copolymers with control of chemistry and molecular weight, resulting in unique physical and biological properties. The benefits from incorporating peptide blocks into copolymer designs arise from the fundamental properties of proteins to adopt ordered conformations and to undergo self-assembly, providing control over structure formation at various length scales when compared to conventional block copolymers. This review covers the synthesis, structure, assembly, properties, and applications of protein-based block copolymers. PMID:21235251

  5. Congenital complete atrioventricular block.

    PubMed Central

    Kertesz, N J; Fenrich, A L; Friedman, R A

    1997-01-01

    Congenital complete atrioventricular block is found in 1 of 22,000 live births. Over time, it has become apparent that these patients represent not a single distinct disease process, but several processes with the common manifestation of atrioventricular block. The evaluation of these patients to determine their risk of sudden death and need for pacing is not well defined. Images PMID:9456483

  6. High Relief Block Printing.

    ERIC Educational Resources Information Center

    Foster, Michael

    1989-01-01

    Explains a method of block printing using styrofoam shapes to make high relief. Describes the creation of the block design as well as the actual printing process. Uses a range of paper types for printing so children can see the results of using different media. (LS)

  7. Surviving Block Scheduling.

    ERIC Educational Resources Information Center

    Haley, Marjorie

    A discussion of block scheduling for second language instruction looks at the advantages and disadvantages and offers some suggestions for classroom management and course organization. It is argued that block scheduling may offer a potential solution to large classes, insufficient time for labs, too little individualized instruction; few…

  8. Thermally actuated wedge block

    DOEpatents

    Queen, Jr., Charles C.

    1980-01-01

    This invention relates to an automatically-operating wedge block for maintaining intimate structural contact over wide temperature ranges, including cryogenic use. The wedging action depends on the relative thermal expansion of two materials having very different coefficients of thermal expansion. The wedge block expands in thickness when cooled to cryogenic temperatures and contracts in thickness when returned to room temperature.

  9. Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction

    NASA Astrophysics Data System (ADS)

    Mori, Kazuki; Takeda, Kunihiro; Kusafuka, Toshiki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

    2016-05-01

    We investigated a V-based electrode for the realization of low ohmic-contact resistivity in n-type AlGaN with a high AlN molar fraction characterized by the circular transmission line model. The contact resistivity of n-type Al0.62Ga0.38N prepared using the V/Al/Ni/Au electrode reached 1.13 × 10-6 Ω cm2. Using this electrode, we also demonstrated the fabrication of UV light-emitting diodes (LEDs) with an emission wavelength of approximately 300 nm. An operating voltage of LED prepared using a V/Al/Ni/Au electrode was 1.6 V lower at 100 mA current injection than that prepared using a Ti/Al/Ti/Au electrode, with a specific contact resistance of approximately 2.36 × 10-4 Ω cm2 for n-type Al0.62Ga0.38N.

  10. Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction

    NASA Astrophysics Data System (ADS)

    Mori, Kazuki; Takeda, Kunihiro; Kusafuka, Toshiki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

    2016-05-01

    We investigated a V-based electrode for the realization of low ohmic-contact resistivity in n-type AlGaN with a high AlN molar fraction characterized by the circular transmission line model. The contact resistivity of n-type Al0.62Ga0.38N prepared using the V/Al/Ni/Au electrode reached 1.13 × 10‑6 Ω cm2. Using this electrode, we also demonstrated the fabrication of UV light-emitting diodes (LEDs) with an emission wavelength of approximately 300 nm. An operating voltage of LED prepared using a V/Al/Ni/Au electrode was 1.6 V lower at 100 mA current injection than that prepared using a Ti/Al/Ti/Au electrode, with a specific contact resistance of approximately 2.36 × 10‑4 Ω cm2 for n-type Al0.62Ga0.38N.

  11. Characterization of blocked isocyanates

    NASA Astrophysics Data System (ADS)

    Mirčeva, A.; Janežič, M.; Žigon, M.; Malavašič, T.

    1992-03-01

    An ionomer crosslinker on the basis of partly blocked hexamethylene isocyanurate was synthesized and characterized by FTIR and NMR spectroscopy and by gel permeation chromatography. To determine the selectivity of the blocking reaction. model compounds were also prepared. Deblocking and curing courses were studied by FTIR thermal methods. The selectivity of the blocking reaction was found to be poor and therefore the obtained ionomer crosslinker consisted of different monomer and oligomer components. Deblocking and curing were highly temperature dependent. Curing was more efficient in one-pack systems consisting of the ionomer crosslinker and of an OH groups rich ionomer polyurethane resin.

  12. Challenges in graphene integration for high-frequency electronics

    NASA Astrophysics Data System (ADS)

    Giannazzo, F.; Fisichella, G.; Greco, G.; Roccaforte, F.

    2016-06-01

    This paper provides an overview of the state-of-the-art research on graphene (Gr) for high-frequency (RF) devices. After discussing current limitations of lateral Gr RF transistors, novel vertical devices concepts such as the Gr Base Hot Electron Transistor (GBHET) will be introduced and the main challenges in Gr integration within these architectures will be discussed. In particular, a GBHET device based on Gr/AlGaN/GaN heterostructure will be considered. An approach to the fabrication of this heterostructure by transfer of CVD grown Gr on copper to the AlGaN surface will be presented. The morphological and electrical properties of this system have been investigated at nanoscale by atomic force microscopy (AFM) and conductive atomic force microscopy (CAFM). In particular, local current-voltage measurements by the CAFM probe revealed the formation of a Schottky contact with low barrier height (˜0.41 eV) and excellent lateral uniformity between Gr and AlGaN. Basing on the electrical parameters extracted from this characterization, the theoretical performances of a GBHET formed by a metal/Al2O3/Gr/AlGaN/GaN stack have been evaluated.

  13. Optoelectronics using block copolymers.

    SciTech Connect

    Botiz, I.; Darling, S. B.; Center for Nanoscale Materials

    2010-05-01

    Block copolymers, either as semiconductors themselves or as structure directors, are emerging as a promising class of materials for understanding and controlling processes associated with both photovoltaic energy conversion and light emitting devices.

  14. Superalloy Lattice Block Structures

    NASA Technical Reports Server (NTRS)

    Nathal, M. V.; Whittenberger, J. D.; Hebsur, M. G.; Kantzos, P. T.; Krause, D. L.

    2004-01-01

    Initial investigations of investment cast superalloy lattice block suggest that this technology will yield a low cost approach to utilize the high temperature strength and environmental resistance of superalloys in lightweight, damage tolerant structural configurations. Work to date has demonstrated that relatively large superalloy lattice block panels can be successfully investment cast from both IN-718 and Mar-M247. These castings exhibited mechanical properties consistent with the strength of the same superalloys measured from more conventional castings. The lattice block structure also accommodates significant deformation without failure, and is defect tolerant in fatigue. The potential of lattice block structures opens new opportunities for the use of superalloys in future generations of aircraft applications that demand strength and environmental resistance at elevated temperatures along with low weight.

  15. Resolving writer's block.

    PubMed Central

    Huston, P.

    1998-01-01

    PROBLEM BEING ADDRESSED: Writer's block, or a distinctly uncomfortable inability to write, can interfere with professional productivity. OBJECTIVE OF PROGRAM: To identify writer's block and to outline suggestions for its early diagnosis, treatment, and prevention. MAIN COMPONENTS OF PROGRAM: Once the diagnosis has been established, a stepwise approach to care is recommended. Mild blockage can be resolved by evaluating and revising expectations, conducting a task analysis, and giving oneself positive feedback. Moderate blockage can be addressed by creative exercises, such as brainstorming and role-playing. Recalcitrant blockage can be resolved with therapy. Writer's block can be prevented by taking opportunities to write at the beginning of projects, working with a supportive group of people, and cultivating an ongoing interest in writing. CONCLUSIONS: Writer's block is a highly treatable condition. A systematic approach can help to alleviate anxiety, build confidence, and give people the information they need to work productively. PMID:9481467

  16. Blocked tear duct

    MedlinePlus

    ... your baby may have an eye infection called conjunctivitis . ... increase the chance of other infections, such as conjunctivitis. ... be prevented. Proper treatment of nasal infections and conjunctivitis may reduce the risk of having a blocked ...

  17. Block copolymer battery separator

    DOEpatents

    Wong, David; Balsara, Nitash Pervez

    2016-04-26

    The invention herein described is the use of a block copolymer/homopolymer blend for creating nanoporous materials for transport applications. Specifically, this is demonstrated by using the block copolymer poly(styrene-block-ethylene-block-styrene) (SES) and blending it with homopolymer polystyrene (PS). After blending the polymers, a film is cast, and the film is submerged in tetrahydrofuran, which removes the PS. This creates a nanoporous polymer film, whereby the holes are lined with PS. Control of morphology of the system is achieved by manipulating the amount of PS added and the relative size of the PS added. The porous nature of these films was demonstrated by measuring the ionic conductivity in a traditional battery electrolyte, 1M LiPF.sub.6 in EC/DEC (1:1 v/v) using AC impedance spectroscopy and comparing these results to commercially available battery separators.

  18. Cell block eleven (left) and cell block fifteen, looking from ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    Cell block eleven (left) and cell block fifteen, looking from cell block two into the "Death Row" exercise yard - Eastern State Penitentiary, 2125 Fairmount Avenue, Philadelphia, Philadelphia County, PA

  19. View of cell block eight (left), cell block seven, and ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    View of cell block eight (left), cell block seven, and southwest guard tower, looking from cell block eight roof - Eastern State Penitentiary, 2125 Fairmount Avenue, Philadelphia, Philadelphia County, PA

  20. Superalloy Lattice Block Structures

    NASA Technical Reports Server (NTRS)

    Whittenberger, J. D.; Nathal, M. V.; Hebsur, M. G.; Kraus, D. L.

    2003-01-01

    In their simplest form, lattice block panels are produced by direct casting and result in lightweight, fully triangulated truss-like configurations which provide strength and stiffness [2]. The earliest realizations of lattice block were made from A1 and steels, primarily under funding from the US Navy [3]. This work also showed that the mechanical efficiency (eg., specific stiffness) of lattice block structures approached that of honeycomb structures [2]. The lattice architectures are also less anisotropic, and the investment casting route should provide a large advantage in cost and temperature capability over honeycombs which are limited to alloys that can be processed into foils. Based on this early work, a program was initiated to determine the feasibility of extending the high temperature superalloy lattice block [3]. The objective of this effort was to provide an alternative to intermetallics and composites in achieving a lightweight high temperature structure without sacrificing the damage tolerance and moderate cost inherent in superalloys. To establish the feasibility of the superalloy lattice block concept, work was performed in conjunction with JAMCORP, Inc. Billerica, MA, to produce a number of lattice block panels from both IN71 8 and Mar-M247.

  1. Growing Up with Their Blocks.

    ERIC Educational Resources Information Center

    Winarski, Diana L.

    1995-01-01

    Describes one teacher's use of traditional wooden blocks in fifth-grade curriculum. Notes that use of blocks can teach communication, teamwork, precision, and arithmetic concepts. Also describes four easy classroom block projects. (TM)

  2. Ultrafiltration behaviors of alginate blocks at various calcium concentrations.

    PubMed

    Meng, Shujuan; Winters, Harvey; Liu, Yu

    2015-10-15

    Alginate, a linear copolymer, is composed of 1,4-linked β-d-mannuronic acid (M) and α-l-guluronic acid (G), which are combined into homopolymeric blocks (MM-block and GG-block) and heteropolymeric block (MG-block). It has been widely used as a model foulant in various studies of membrane fouling, thus this study investigated the impacts of calcium ion on MG-, MM- and GG-blocks of alginate and the filtration behaviors of the three types of alginate blocks at different concentrations of calcium ion. Results showed that calcium ion had the most serious effects on GG-blocks and significantly promotes the formation of transparent exopolymeric particles (TEP) from GG-blocks which in turn led to rapid formation of thick cake layer on membrane surface during the filtration of GG-blocks. As for MM-blocks, it was found that the formation of TEP was proportional to the Ca(2+) concentration in MM-blocks solution, while the membrane fouling was enhanced by Ca(2+) in the filtration of MM-blocks solution. Unlike MM- and GG-blocks, MG-blocks were nearly not affected by addition of calcium ion, as the result, there was no significant increase in TEP. The initial fouling rates and the mass of foulants deposed on the membrane surfaces further revealed a close correlation between the TEP concentration and the membrane fouling propensity. The observations by field emission scanning electron microscope (FESEM) and atomic force microscope (AFM) further confirmed the formation process of the cake layer by TEP on the membrane surface. This study offers deep insights into the development of membrane fouling by different alginate blocks in the presence of calcium ion, and suggests that TEP formed from alginate blocks played a very significant role in the fouling development.

  3. Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

    SciTech Connect

    Gunning, BP; Fabien, CAM; Merola, JJ; Clinton, EA; Doolittle, WA; Wang, S; Fischer, AM; Ponce, FA

    2015-01-28

    The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions are made between three primary p-type conduction mechanisms: traditional valence band conduction, impurity band conduction, and 2D conduction within a 2D hole gas at a hetero-interface. The bulk and 2D contributions to the overall carrier transport are identified and the relative contributions are found to vary strongly with growth conditions. Films grown with III/V ratio less than 1.5 exhibit high hole concentrations exceeding 2 x 10(19) cm(-3) with effective acceptor activation energies of 51 meV. Films with III/V ratios greater than 1.5 exhibit lower overall hole concentrations and significant contributions from 2D transport at the hetero-interface. Films grown with III/V ratio of 1.2 and Mg concentrations exceeding 2 x 10(20) cm(-3) show no detectable inversion domains or Mg precipitation. Highly Mg-doped p-GaN and p-AlGaN with Al fractions up to 27% similarly exhibit hole concentrations exceeding 2 x 10(19) cm(-3). The p-GaN and p-Al0.11Ga0.89N films show broad ultraviolet (UV) photoluminescence peaks, which intercept the valence band, supporting the presence of a Mg acceptor band. Finally, a multi-quantum-well light-emitting diode (LED) and p-i-n diode are grown, both of which demonstrate rectifying behavior with turn-on voltages of 3-3.5V and series resistances of 6-10 Omega without the need for any post-metallization annealing. The LED exhibits violet-blue luminescence at 425 nm, while the p-i-n diode shows UV luminescence at 381 nm, and both devices still show substantial light emission even when submerged in liquid nitrogen at 77 K. (C) 2015 AIP Publishing LLC.

  4. Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

    SciTech Connect

    Gunning, Brendan P.; Fabien, Chloe A. M.; Merola, Joseph J.; Clinton, Evan A.; Doolittle, W. Alan; Wang, Shuo; Fischer, Alec M.; Ponce, Fernando A.

    2015-01-28

    The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions are made between three primary p-type conduction mechanisms: traditional valence band conduction, impurity band conduction, and 2D conduction within a 2D hole gas at a hetero-interface. The bulk and 2D contributions to the overall carrier transport are identified and the relative contributions are found to vary strongly with growth conditions. Films grown with III/V ratio less than 1.5 exhibit high hole concentrations exceeding 2 × 10{sup 19} cm{sup −3} with effective acceptor activation energies of 51 meV. Films with III/V ratios greater than 1.5 exhibit lower overall hole concentrations and significant contributions from 2D transport at the hetero-interface. Films grown with III/V ratio of 1.2 and Mg concentrations exceeding 2 × 10{sup 20} cm{sup −3} show no detectable inversion domains or Mg precipitation. Highly Mg-doped p-GaN and p-AlGaN with Al fractions up to 27% similarly exhibit hole concentrations exceeding 2 × 10{sup 19} cm{sup −3}. The p-GaN and p-Al{sub 0.11}Ga{sub 0.89}N films show broad ultraviolet (UV) photoluminescence peaks, which intercept the valence band, supporting the presence of a Mg acceptor band. Finally, a multi-quantum-well light-emitting diode (LED) and p-i-n diode are grown, both of which demonstrate rectifying behavior with turn-on voltages of 3–3.5 V and series resistances of 6–10 Ω without the need for any post-metallization annealing. The LED exhibits violet-blue luminescence at 425 nm, while the p-i-n diode shows UV luminescence at 381 nm, and both devices still show substantial light emission even when submerged in liquid nitrogen at 77 K.

  5. A Difluorobenzoxadiazole Building Block for Efficient Polymer Solar Cells.

    PubMed

    Zhao, Jingbo; Li, Yunke; Hunt, Adrian; Zhang, Jianquan; Yao, Huatong; Li, Zhengke; Zhang, Jie; Huang, Fei; Ade, Harald; Yan, He

    2016-03-01

    A difluorobenzoxadiazole building block is synthesized and utilized to construct a conjugated polymer leading to high-performance thick-film polymer solar cells with a V(OC) of 0.88 V and a power conversion efficiency of 9.4%. This new building block can be used in many possible polymer structures for various organic electro-nic applications.

  6. A Difluorobenzoxadiazole Building Block for Efficient Polymer Solar Cells.

    PubMed

    Zhao, Jingbo; Li, Yunke; Hunt, Adrian; Zhang, Jianquan; Yao, Huatong; Li, Zhengke; Zhang, Jie; Huang, Fei; Ade, Harald; Yan, He

    2016-03-01

    A difluorobenzoxadiazole building block is synthesized and utilized to construct a conjugated polymer leading to high-performance thick-film polymer solar cells with a V(OC) of 0.88 V and a power conversion efficiency of 9.4%. This new building block can be used in many possible polymer structures for various organic electro-nic applications. PMID:26689976

  7. A Place for Block Play.

    ERIC Educational Resources Information Center

    Moore, Gary T.

    1997-01-01

    Discusses the importance of block play--including its contributions to perceptual, fine motor, and cognitive development--and components of a good preschool block play area. Recommends unit blocks complemented by stacking blocks, toys, beads, cubes, and Brio wooden toys. Makes recommendations for space, size, locations and connections to other…

  8. A Fluid Block Schedule

    ERIC Educational Resources Information Center

    Ubben, Gerald C.

    1976-01-01

    Achieving flexibility without losing student accountability is a challenge that faces every school. With a fluid block schedule, as described here, accountability is maintained without inhibiting flexibility. An additional advantage is that three levels of schedule decision making take some of the pressure off the principal. (Editor)

  9. Spice Blocks Melanoma Growth

    ERIC Educational Resources Information Center

    Science Teacher, 2005

    2005-01-01

    Curcumin, the pungent yellow spice found in both turmeric and curry powders, blocks a key biological pathway needed for development of melanoma and other cancers, according to a study that appears in the journal Cancer. Researchers from The University of Texas M. D. Anderson Cancer Center demonstrate how curcumin stops laboratory strains of…

  10. Flattening basic blocks.

    SciTech Connect

    Utke, J.; Mathematics and Computer Science

    2006-01-01

    The application of cross country elimination strategies requires access to the computational graph or at least subgraphs for certain scopes, e.g. a basic block. Under the presence of aliased variables the construction of these (sub)graphs encounters ambiguities. We propose an algorithm to construct ambiguity free subgraphs.

  11. Ischemic Nerve Block.

    ERIC Educational Resources Information Center

    Williams, Ian D.

    This experiment investigated the capability for movement and muscle spindle function at successive stages during the development of ischemic nerve block (INB) by pressure cuff. Two male subjects were observed under six randomly ordered conditions. The duration of index finger oscillation to exhaustion, paced at 1.2Hz., was observed on separate…

  12. What's behind Block Scheduling?

    ERIC Educational Resources Information Center

    Gierke, Carolyn

    1999-01-01

    Discussion of block scheduling in secondary schools focuses on its impact on the school library media center. Discusses increased demand for library services, scheduling classes, the impact on librarians' time, teaching information technology, local area networks, and the increased pace of activity. (LRW)

  13. Stable and metastable Si negative-U centers in AlGaN and AlN

    SciTech Connect

    Trinh, Xuan Thang; Nilsson, Daniel; Ivanov, Ivan G.; Janzén, Erik; Kakanakova-Georgieva, Anelia; Son, Nguyen Tien

    2014-10-20

    Electron paramagnetic resonance studies of Si-doped Al{sub x}Ga{sub 1−x}N (0.79 ≤ x ≤ 1.0) reveal two Si negative-U (or DX) centers, which can be separately observed for x ≥ 0.84. We found that for the stable DX center, the energy |E{sub DX}| of the negatively charged state DX{sup −}, which is also considered as the donor activation energy, abruptly increases with Al content for x ∼ 0.83–1.0 approaching ∼240 meV in AlN, whereas E{sub DX} remains to be close to the neutral charge state E{sub d} for the metastable DX center (∼11 meV below E{sub d} in AlN).

  14. Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission

    SciTech Connect

    Young, Erin C.; Wu Feng; Haeger, Daniel A.; Nakamura, Shuji; Denbaars, Steven P.; Cohen, Daniel A.; Speck, James S.; Romanov, Alexey E.

    2012-10-01

    In this Letter, we report on the growth and properties of relaxed, compositionally graded Al{sub x}Ga{sub 1-x}N buffer layers on freestanding semipolar (2021) GaN substrates. Continuous and step compositional grades with Al concentrations up to x = 0.61 have been achieved, with emission wavelengths in the mid-ultraviolet region as low as 265 nm. Coherency stresses were relaxed progressively throughout the grades by misfit dislocation generation via primary (basal) slip and secondary (non-basal) slip systems. Threading dislocation densities in the final layers of the grades were less than 10{sup 6}/cm{sup 2} as confirmed by plan-view transmission electron microscopy and cathodoluminescence studies.

  15. Managing access block.

    PubMed

    Cameron, Peter; Scown, Paul; Campbell, Donald

    2002-01-01

    There is pessimism regarding the ability of the Acute Health Sector to manage access block for emergency and elective patients. Melbourne Health suffered an acute bed crisis in 2001 resulting in record ambulance diversions and emergency department (ED) delays. We conducted an observational study to reduce access block for emergency patients whilst maintaining elective throughput at Melbourne Health. This involved a clinician-led taskforce using previously proven principles for organisational change to implement 51 actions to improve patient access over a three-month period. The primary outcome measures were ambulance diversion, emergency patients waiting more than 12 hours for an inpatient bed, elective throughput and theatre cancellations. Despite a reduction in multi-day bed numbers all primary objectives were met, ambulance diversion decreased to minimal levels, 12-hour waits decreased by 40% and elective throughput was maintained. Theatre cancellations were also minimised. We conclude that access block can be improved by clinician-led implementation of proven process improvements over a short time frame. The ability to sustain change over the longer term requires further study.

  16. Block 3. This photograph depicts the northern view of Block ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    Block 3. This photograph depicts the northern view of Block 2 towards the May D & F Tower from the main path along the western facades - Skyline Park, 1500-1800 Arapaho Street, Denver, Denver County, CO

  17. High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces

    NASA Astrophysics Data System (ADS)

    Chan, Silvia H.; Keller, Stacia; Tahhan, Maher; Li, Haoran; Romanczyk, Brian; DenBaars, Steven P.; Mishra, Umesh K.

    2016-06-01

    This paper reports high two-dimensional electron gas mobility attained from the regrowth of the AlGaN gating layer on ex situ GaN surfaces. To repair etch-damaged GaN surfaces, various pretreatments were conducted via metalorganic chemical vapor deposition, followed by a regrown AlGaN/GaN mobility test structure to evaluate the extent of recovery. The developed treatment process that was shown to significantly improve the electron mobility consisted of a N2 + NH3 pre-anneal plus an insertion of a 4 nm or thicker GaN interlayer prior to deposition of the AlGaN gating layer. Using the optimized process, a high electron mobility transistor (HEMT) device was fabricated which exhibited a high mobility of 1450 cm2 V-1 s-1 (R sh = 574 ohm/sq) and low dispersion characteristics. The additional inclusion of an in situ Al2O3 dielectric into the regrowth process for MOS-HEMTs still preserved the transport properties near etch-impacted areas.

  18. Block Transfer Handbook: Constructing and Negotiating Block Transfer Agreements.

    ERIC Educational Resources Information Center

    Finlay, Finola

    The purpose of this handbook is to provide resources for institutions or articulation committees who are engaged in the task of investigating the feasibility of block transfer agreements. Block transfer is the process whereby a block of credits is granted to students who have successfully completed a certificate, diploma, or cluster of courses…

  19. View southeast of caps for blocks for JFK; blocks are ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    View southeast of caps for blocks for JFK; blocks are used to support ship when it is repositioned to paint inaccessible areas masked by original support blocks. - Naval Base Philadelphia-Philadelphia Naval Shipyard, Carpentry Shop, League Island, Philadelphia, Philadelphia County, PA

  20. The poor man's cell block

    PubMed Central

    Darlington, Ann

    2010-01-01

    The authors describe a simple method for making formalin or isopropyl alcohol vapour fixed cell blocks from fine needle aspiration cytology specimens that we refer to as ‘The Poor Man's Cell Block.’ PMID:20671053

  1. Fermion-scalar conformal blocks

    DOE PAGES

    Iliesiu, Luca; Kos, Filip; Poland, David; Pufu, Silviu S.; Simmons-Duffin, David; Yacoby, Ran

    2016-04-13

    In this study, we compute the conformal blocks associated with scalar-scalar-fermionfermion 4-point functions in 3D CFTs. Together with the known scalar conformal blocks, our result completes the task of determining the so-called ‘seed blocks’ in three dimensions. In addition, conformal blocks associated with 4-point functions of operators with arbitrary spins can now be determined from these seed blocks by using known differential operators.

  2. Porous block nanofiber composite filters

    DOEpatents

    Ginley, David S.; Curtis, Calvin J.; Miedaner, Alexander; Weiss, Alan J.; Paddock, Arnold

    2016-08-09

    Porous block nano-fiber composite (110), a filtration system (10) and methods of using the same are disclosed. An exemplary porous block nano-fiber composite (110) includes a porous block (100) having one or more pores (200). The porous block nano-fiber composite (110) also includes a plurality of inorganic nano-fibers (211) formed within at least one of the pores (200).

  3. CORE SATURATION BLOCKING OSCILLATOR

    DOEpatents

    Spinrad, R.J.

    1961-10-17

    A blocking oscillator which relies on core saturation regulation to control the output pulse width is described. In this arrangement an external magnetic loop is provided in which a saturable portion forms the core of a feedback transformer used with the thermionic or semi-conductor active element. A first stationary magnetic loop establishes a level of flux through the saturation portion of the loop. A second adjustable magnet moves the flux level to select a saturation point giving the desired output pulse width. (AEC)

  4. Property Blocks: Games and Activities.

    ERIC Educational Resources Information Center

    Humphreys, Alan, Ed.; Dailey, Jean, Ed.

    This pamphlet describes the property blocks produced by MINNEMAST, and discusses their use in the development of thinking processes. Classification systems, including block diagrams and tree diagrams, are discussed. Sixteen classroom activities and eleven games which use the blocks are described. Suggestions to the teacher for further reading are…

  5. Building Curriculum during Block Play

    ERIC Educational Resources Information Center

    Andrews, Nicole

    2015-01-01

    Blocks are not just for play! In this article, Nicole Andrews describes observing the interactions of three young boys enthusiastically engaged in the kindergarten block center of their classroom, using blocks in a building project that displayed their ability to use critical thinking skills, physics exploration, and the development of language…

  6. Eikonalization of conformal blocks

    SciTech Connect

    Fitzpatrick, A. Liam; Kaplan, Jared; Walters, Matthew T.; Wang, Junpu

    2015-09-03

    Classical field configurations such as the Coulomb potential and Schwarzschild solution are built from the t-channel exchange of many light degrees of freedom. We study the CFT analog of this phenomenon, which we term the 'eikonalization' of conformal blocks. We show that when an operator T appears in the OPE Ο(x)Ο(0), then the large spin Fock space states [TT···T] also appear in this OPE with a computable coefficient. The sum over the exchange of these Fock space states in an correlator build the classical 'T field' in the dual AdS description. In some limits the sum of all Fock space exchanges can be represented as the exponential of a single T exchange in the 4-pt correlator of O. Our results should be useful for systematizing 1/ℓ perturbation theory in general CFTs and simplifying the computation of large spin OPE coefficients. As examples we obtain the leading log ℓ dependence of Fock space conformal block coefficients, and we directly compute the OPE coefficients of the simplest ‘triple-trace’ operators.

  7. Eikonalization of conformal blocks

    DOE PAGES

    Fitzpatrick, A. Liam; Kaplan, Jared; Walters, Matthew T.; Wang, Junpu

    2015-09-03

    Classical field configurations such as the Coulomb potential and Schwarzschild solution are built from the t-channel exchange of many light degrees of freedom. We study the CFT analog of this phenomenon, which we term the 'eikonalization' of conformal blocks. We show that when an operator T appears in the OPE Ο(x)Ο(0), then the large spin Fock space states [TT···T]ℓ also appear in this OPE with a computable coefficient. The sum over the exchange of these Fock space states in an correlator build the classical 'T field' in the dual AdS description. In some limits the sum of all Fock spacemore » exchanges can be represented as the exponential of a single T exchange in the 4-pt correlator of O. Our results should be useful for systematizing 1/ℓ perturbation theory in general CFTs and simplifying the computation of large spin OPE coefficients. As examples we obtain the leading log ℓ dependence of Fock space conformal block coefficients, and we directly compute the OPE coefficients of the simplest ‘triple-trace’ operators.« less

  8. Electron effective mass in Al{sub 0.72}Ga{sub 0.28}N alloys determined by mid-infrared optical Hall effect

    SciTech Connect

    Schöche, S. Kühne, P.; Hofmann, T.; Schubert, M.; Nilsson, D.; Kakanakova-Georgieva, A.; Janzén, E.; Darakchieva, V.

    2013-11-18

    The effective electron mass parameter in Si-doped Al{sub 0.72}Ga{sub 0.28}N is determined to be m{sup ∗}=(0.336±0.020) m{sub 0} from mid-infrared optical Hall effect measurements. No significant anisotropy of the effective electron mass parameter is found supporting theoretical predictions. Assuming a linear change of the effective electron mass with the Al content in AlGaN alloys and m{sup ∗}=0.232 m{sub 0} for GaN, an average effective electron mass of m{sup ∗}=0.376 m{sub 0} can be extrapolated for AlN. The analysis of mid-infrared spectroscopic ellipsometry measurements further confirms the two phonon mode behavior of the E{sub 1}(TO) and one phonon mode behavior of the A{sub 1}(LO) phonon mode in high-Al-content AlGaN alloys as seen in previous Raman scattering studies.

  9. Nano-architectures by covalent assembly of molecular building blocks.

    PubMed

    Grill, Leonhard; Dyer, Matthew; Lafferentz, Leif; Persson, Mats; Peters, Maike V; Hecht, Stefan

    2007-11-01

    The construction of electronic devices from single molecular building blocks, which possess certain functions such as switching or rectifying and are connected by atomic-scale wires on a supporting surface, is an essential goal of molecular electronics. A key challenge is the controlled assembly of molecules into desired architectures by strong, that is, covalent, intermolecular connections, enabling efficient electron transport between the molecules and providing high stability. However, no molecular networks on surfaces 'locked' by covalent interactions have been reported so far. Here, we show that such covalently bound molecular nanostructures can be formed on a gold surface upon thermal activation of porphyrin building blocks and their subsequent chemical reaction at predefined connection points. We demonstrate that the topology of these nanostructures can be precisely engineered by controlling the chemical structure of the building blocks. Our results represent a versatile route for future bottom-up construction of sophisticated electronic circuits and devices, based on individual functionalized molecules.

  10. Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

    SciTech Connect

    Anand, M. J. E-mail: eging@ntu.edu.sg; Ng, G. I. E-mail: eging@ntu.edu.sg; Syamal, B.; Zhou, X.; Arulkumaran, S.; Manoj Kumar, C. M.; Ranjan, K.; Vicknesh, S.; Foo, S. C.

    2015-02-23

    The influence of electric field (EF) on the dynamic ON-resistance (dyn-R{sub DS[ON]}) and threshold-voltage shift (ΔV{sub th}) of AlGaN/GaN high electron mobility transistors on Si has been investigated using pulsed current-voltage (I{sub DS}-V{sub DS}) and drain current (I{sub D}) transients. Different EF was realized with devices of different gate-drain spacing (L{sub gd}) under the same OFF-state stress. Under high-EF (L{sub gd} = 2 μm), the devices exhibited higher dyn-R{sub DS[ON]} degradation but a small ΔV{sub th} (∼120 mV). However, at low-EF (L{sub gd} = 5 μm), smaller dyn-R{sub DS[ON]} degradation but a larger ΔV{sub th} (∼380 mV) was observed. Our analysis shows that under OFF-state stress, the gate electrons are injected and trapped in the AlGaN barrier by tunnelling-assisted Poole-Frenkel conduction mechanism. Under high-EF, trapping spreads towards the gate-drain access region of the AlGaN barrier causing dyn-R{sub DS[ON]} degradation, whereas under low-EF, trapping is mostly confined under the gate causing ΔV{sub th}. A trap with activation energy 0.33 eV was identified in the AlGaN barrier by I{sub D}-transient measurements. The influence of EF on trapping was also verified by Silvaco TCAD simulations.

  11. Blocking Losses With a Photon Counter

    NASA Technical Reports Server (NTRS)

    Moision, Burce E.; Piazzolla, Sabino

    2012-01-01

    It was not known how to assess accurately losses in a communications link due to photodetector blocking, a phenomenon wherein a detector is rendered inactive for a short time after the detection of a photon. When used to detect a communications signal, blocking leads to losses relative to an ideal detector, which may be measured as a reduction in the communications rate for a given received signal power, or an increase in the signal power required to support the same communications rate. This work involved characterizing blocking losses for single detectors and arrays of detectors. Blocking may be mitigated by spreading the signal intensity over an array of detectors, reducing the count rate on any one detector. A simple approximation was made to the blocking loss as a function of the probability that a detector is unblocked at a given time, essentially treating the blocking probability as a scaling of the detection efficiency. An exact statistical characterization was derived for a single detector, and an approximation for multiple detectors. This allowed derivation of several accurate approximations to the loss. Methods were also derived to account for a rise time in recovery, and non-uniform illumination due to diffraction and atmospheric distortion of the phase front. It was assumed that the communications signal is intensity modulated and received by an array of photon-counting photodetectors. For the purpose of this analysis, it was assumed that the detectors are ideal, in that they produce a signal that allows one to reproduce the arrival times of electrons, produced either as photoelectrons or from dark noise, exactly. For single detectors, the performance of the maximum-likelihood (ML) receiver in blocking is illustrated, as well as a maximum-count (MC) receiver, that, when receiving a pulse-position-modulated (PPM) signal, selects the symbol corresponding to the slot with the largest electron count. Whereas the MC receiver saturates at high count rates

  12. Radiation Blocking Lenses

    NASA Technical Reports Server (NTRS)

    1993-01-01

    The Biomedical Optical Company of America's Eagle 475 lens absorbs 100 percent of all photowavelengths considered hazardous to eye tissue, including ultraviolet and blue light, which are considered contributors to cataract and age-related macular degeneration. The lens absorbs hazardous wavelengths, but allows a higher percentage of visually useful areas of the spectrum to pass through. Polarization blocks out irritating glint and glare and heightens visual acuity. The Eagle 475 sunglasses are the latest in a series of spinoffs that originated at the Jet Propulsion Laboratory where two scientists developed a protective, welding curtain that filtered out harmful irradiance. The result was a commercial curtain that absorbs filters and scatters light, providing protection for personnel in welding areas. Further research focused on protective industrial glasses and later on consumer products.

  13. Atomic Basic Blocks

    NASA Astrophysics Data System (ADS)

    Scheler, Fabian; Mitzlaff, Martin; Schröder-Preikschat, Wolfgang

    Die Entscheidung, einen zeit- bzw. ereignisgesteuerten Ansatz für ein Echtzeitsystem zu verwenden, ist schwierig und sehr weitreichend. Weitreichend vor allem deshalb, weil diese beiden Ansätze mit äußerst unterschiedlichen Kontrollflussabstraktionen verknüpft sind, die eine spätere Migration zum anderen Paradigma sehr schwer oder gar unmöglich machen. Wir schlagen daher die Verwendung einer Zwischendarstellung vor, die unabhängig von der jeweils verwendeten Kontrollflussabstraktion ist. Für diesen Zweck verwenden wir auf Basisblöcken basierende Atomic Basic Blocks (ABB) und bauen darauf ein Werkzeug, den Real-Time Systems Compiler (RTSC) auf, der die Migration zwischen zeit- und ereignisgesteuerten Systemen unterstützt.

  14. Large Block Test Final Report

    SciTech Connect

    Lin, W

    2001-12-01

    This report documents the Large-Block Test (LBT) conducted at Fran Ridge near Yucca Mountain, Nevada. The LBT was a thermal test conducted on an exposed block of middle non-lithophysal Topopah Spring tuff (Tptpmn) and was designed to assist in understanding the thermal-hydrological-mechanical-chemical (THMC) processes associated with heating and then cooling a partially saturated fractured rock mass. The LBT was unique in that it was a large (3 x 3 x 4.5 m) block with top and sides exposed. Because the block was exposed at the surface, boundary conditions on five of the six sides of the block were relatively well known and controlled, making this test both easier to model and easier to monitor. This report presents a detailed description of the test as well as analyses of the data and conclusions drawn from the test. The rock block that was tested during the LBT was exposed by excavation and removal of the surrounding rock. The block was characterized and instrumented, and the sides were sealed and insulated to inhibit moisture and heat loss. Temperature on the top of the block was also controlled. The block was heated for 13 months, during which time temperature, moisture distribution, and deformation were monitored. After the test was completed and the block cooled down, a series of boreholes were drilled, and one of the heater holes was over-cored to collect samples for post-test characterization of mineralogy and mechanical properties. Section 2 provides background on the test. Section 3 lists the test objectives and describes the block site, the site configuration, and measurements made during the test. Section 3 also presents a chronology of events associated with the LBT, characterization of the block, and the pre-heat analyses of the test. Section 4 describes the fracture network contained in the block. Section 5 describes the heating/cooling system used to control the temperature in the block and presents the thermal history of the block during the test

  15. Improved ultrasonic standard reference blocks

    NASA Technical Reports Server (NTRS)

    Eitzen, D. G.; Sushinsky, G. F.; Chwirut, D. J.; Bechtoldt, C. J.; Ruff, A. W.

    1976-01-01

    A program to improve the quality, reproducibility and reliability of nondestructive testing through the development of improved ASTM-type ultrasonic reference standards is described. Reference blocks of aluminum, steel, and titanium alloys are to be considered. Equipment representing the state-of-the-art in laboratory and field ultrasonic equipment was obtained and evaluated. RF and spectral data on ten sets of ultrasonic reference blocks have been taken as part of a task to quantify the variability in response from nominally identical blocks. Techniques for residual stress, preferred orientation, and micro-structural measurements were refined and are applied to a reference block rejected by the manufacturer during fabrication in order to evaluate the effect of metallurgical condition on block response. New fabrication techniques for reference blocks are discussed and ASTM activities are summarized.

  16. Big Questions: The Ultimate Building Blocks of Matter

    SciTech Connect

    Lincoln, Don

    2013-11-06

    The Standard Model of particle physics treats quarks and leptons as having no size at all. Quarks are found inside protons and neutrons and the most familiar lepton is the electron. While the best measurements to date support that idea, there is circumstantial evidence that suggests that perhaps the these tiny particles might be composed of even smaller building blocks. This video explains this circumstantial evidence and introduces some very basic ideas of what those building blocks might be.

  17. New mechanism for dislocation blocking in strained layer epitaxial growth

    SciTech Connect

    Stach, E.A.; Schwarz, K.W.; Hull, R.; Ross, F.M.; Tromp, R.M.

    1999-09-14

    Dislocation interactions play a critical role in plasticity and heteroepitaxial strain relaxation. We use real time transmission electron microscopy observations of the interaction between threading and misfit dislocations in SiGe heterostructures to investigate interactions quantitatively. In addition to the expected long range blocking of threading segments, we observe a new short range mechanism which is significantly more effective. Simulations show that this reactive blocking occurs when two dislocations with the same Burgers vector reconnect.

  18. Big Questions: The Ultimate Building Blocks of Matter

    ScienceCinema

    Lincoln, Don

    2016-07-12

    The Standard Model of particle physics treats quarks and leptons as having no size at all. Quarks are found inside protons and neutrons and the most familiar lepton is the electron. While the best measurements to date support that idea, there is circumstantial evidence that suggests that perhaps the these tiny particles might be composed of even smaller building blocks. This video explains this circumstantial evidence and introduces some very basic ideas of what those building blocks might be.

  19. Strategies for Controlled Placement of Nanoscale Building Blocks

    PubMed Central

    2007-01-01

    The capability of placing individual nanoscale building blocks on exact substrate locations in a controlled manner is one of the key requirements to realize future electronic, optical, and magnetic devices and sensors that are composed of such blocks. This article reviews some important advances in the strategies for controlled placement of nanoscale building blocks. In particular, we will overview template assisted placement that utilizes physical, molecular, or electrostatic templates, DNA-programmed assembly, placement using dielectrophoresis, approaches for non-close-packed assembly of spherical particles, and recent development of focused placement schemes including electrostatic funneling, focused placement via molecular gradient patterns, electrodynamic focusing of charged aerosols, and others. PMID:21794185

  20. Bradyarrhythmias and conduction blocks.

    PubMed

    Vogler, Julia; Breithardt, Günter; Eckardt, Lars

    2012-07-01

    Bradyarrhythmias are a common clinical finding and comprise a number of rhythm disorders including sinus node dysfunction and atrioventricular conduction disturbances. Clinical presentation varies from asymptomatic electrocardiogram findings (eg, during a routine examination) to a wide range of symptoms such as heart failure symptoms, near syncope or syncope, central nervous symptoms, or nonspecific and chronic symptoms such as dizziness or fatigue. Conditions resulting in bradyarrhythmic disorders are divided into intrinsic and extrinsic conditions causing damage to the conduction system. Furthermore bradyarrhythmias can be a normal physiologic reaction under certain circumstances. A proper diagnosis including a symptom-rhythm correlation is extremely important and is generally established by noninvasive diagnostic studies (12-lead electrocardiogram, Holter electrocardiogram, exercise testing, event recorder, implantable loop recorder). Invasive electrophysiologic testing is rarely required. If reversible extrinsic causes of bradyarrhythmias such as drugs (most often beta-blockers, glycosides and/or calcium channel blockers) or underlying treatable diseases are ruled out, cardiac pacing is usually the therapy of choice in symptomatic bradyarrhythmias. In this article of the current series on arrhythmias we will review the pathophysiology, diagnosis and treatment options of bradyarrhythmias, especially sinus node dysfunction and atrioventricular conduction blocks.

  1. 31 CFR 589.301 - Blocked account; blocked property.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 31 Money and Finance:Treasury 3 2014-07-01 2014-07-01 false Blocked account; blocked property. 589.301 Section 589.301 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY UKRAINE RELATED SANCTIONS...

  2. 31 CFR 588.301 - Blocked account; blocked property.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 31 Money and Finance: Treasury 3 2010-07-01 2010-07-01 false Blocked account; blocked property. 588.301 Section 588.301 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY WESTERN BALKANS...

  3. Block 3. Central view of Block 3 observed from the ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    Block 3. Central view of Block 3 observed from the west to the east. This photograph reveals the alignment of trees within the central path of the park. In addition, this photograph exposes broken bricks aligning tree beds - Skyline Park, 1500-1800 Arapaho Street, Denver, Denver County, CO

  4. 31 CFR 551.301 - Blocked account; blocked property.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 31 Money and Finance: Treasury 3 2010-07-01 2010-07-01 false Blocked account; blocked property. 551.301 Section 551.301 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY SOMALIA SANCTIONS...

  5. 31 CFR 541.301 - Blocked account; blocked property.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 31 Money and Finance: Treasury 3 2010-07-01 2010-07-01 false Blocked account; blocked property. 541.301 Section 541.301 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY ZIMBABWE SANCTIONS...

  6. 31 CFR 551.301 - Blocked account; blocked property.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 31 Money and Finance:Treasury 3 2014-07-01 2014-07-01 false Blocked account; blocked property. 551.301 Section 551.301 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY SOMALIA SANCTIONS REGULATIONS...

  7. 31 CFR 551.301 - Blocked account; blocked property.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 31 Money and Finance:Treasury 3 2011-07-01 2011-07-01 false Blocked account; blocked property. 551.301 Section 551.301 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY SOMALIA SANCTIONS REGULATIONS...

  8. 31 CFR 551.301 - Blocked account; blocked property.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 31 Money and Finance:Treasury 3 2012-07-01 2012-07-01 false Blocked account; blocked property. 551.301 Section 551.301 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY SOMALIA SANCTIONS REGULATIONS...

  9. 31 CFR 551.301 - Blocked account; blocked property.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 31 Money and Finance:Treasury 3 2013-07-01 2013-07-01 false Blocked account; blocked property. 551.301 Section 551.301 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY SOMALIA SANCTIONS REGULATIONS...

  10. 31 CFR 548.301 - Blocked account; blocked property.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 31 Money and Finance:Treasury 3 2013-07-01 2013-07-01 false Blocked account; blocked property. 548.301 Section 548.301 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY BELARUS SANCTIONS REGULATIONS...

  11. 31 CFR 548.301 - Blocked account; blocked property.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 31 Money and Finance:Treasury 3 2014-07-01 2014-07-01 false Blocked account; blocked property. 548.301 Section 548.301 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY BELARUS SANCTIONS REGULATIONS...

  12. 31 CFR 548.301 - Blocked account; blocked property.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 31 Money and Finance:Treasury 3 2012-07-01 2012-07-01 false Blocked account; blocked property. 548.301 Section 548.301 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY BELARUS SANCTIONS REGULATIONS...

  13. 31 CFR 548.301 - Blocked account; blocked property.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 31 Money and Finance:Treasury 3 2011-07-01 2011-07-01 false Blocked account; blocked property. 548.301 Section 548.301 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY BELARUS SANCTIONS REGULATIONS...

  14. 31 CFR 548.301 - Blocked account; blocked property.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 31 Money and Finance: Treasury 3 2010-07-01 2010-07-01 false Blocked account; blocked property. 548.301 Section 548.301 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY BELARUS SANCTIONS...

  15. 31 CFR 510.301 - Blocked account; blocked property.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 31 Money and Finance:Treasury 3 2012-07-01 2012-07-01 false Blocked account; blocked property. 510.301 Section 510.301 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY NORTH KOREA SANCTIONS REGULATIONS...

  16. 31 CFR 510.301 - Blocked account; blocked property.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 31 Money and Finance:Treasury 3 2014-07-01 2014-07-01 false Blocked account; blocked property. 510.301 Section 510.301 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY NORTH KOREA SANCTIONS REGULATIONS...

  17. 31 CFR 510.301 - Blocked account; blocked property.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 31 Money and Finance:Treasury 3 2013-07-01 2013-07-01 false Blocked account; blocked property. 510.301 Section 510.301 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY NORTH KOREA SANCTIONS REGULATIONS...

  18. 31 CFR 510.301 - Blocked account; blocked property.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 31 Money and Finance:Treasury 3 2011-07-01 2011-07-01 false Blocked account; blocked property. 510.301 Section 510.301 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY NORTH KOREA SANCTIONS REGULATIONS...

  19. 31 CFR 545.301 - Blocked account; blocked property.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 31 Money and Finance: Treasury 3 2010-07-01 2010-07-01 false Blocked account; blocked property. 545.301 Section 545.301 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY TALIBAN (AFGHANISTAN)...

  20. 31 CFR 594.301 - Blocked account; blocked property.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 31 Money and Finance:Treasury 3 2012-07-01 2012-07-01 false Blocked account; blocked property. 594.301 Section 594.301 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY GLOBAL TERRORISM SANCTIONS...

  1. 31 CFR 594.301 - Blocked account; blocked property.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 31 Money and Finance:Treasury 3 2013-07-01 2013-07-01 false Blocked account; blocked property. 594.301 Section 594.301 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY GLOBAL TERRORISM SANCTIONS...

  2. 31 CFR 594.301 - Blocked account; blocked property.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 31 Money and Finance: Treasury 3 2010-07-01 2010-07-01 false Blocked account; blocked property. 594.301 Section 594.301 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY GLOBAL TERRORISM...

  3. 31 CFR 594.301 - Blocked account; blocked property.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 31 Money and Finance:Treasury 3 2011-07-01 2011-07-01 false Blocked account; blocked property. 594.301 Section 594.301 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY GLOBAL TERRORISM SANCTIONS...

  4. 31 CFR 576.301 - Blocked account; blocked property.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 31 Money and Finance:Treasury 3 2012-07-01 2012-07-01 false Blocked account; blocked property. 576.301 Section 576.301 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY IRAQ STABILIZATION AND INSURGENCY...

  5. 31 CFR 576.301 - Blocked account; blocked property.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 31 Money and Finance:Treasury 3 2011-07-01 2011-07-01 false Blocked account; blocked property. 576.301 Section 576.301 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY IRAQ STABILIZATION AND INSURGENCY...

  6. 31 CFR 576.301 - Blocked account; blocked property.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 31 Money and Finance:Treasury 3 2014-07-01 2014-07-01 false Blocked account; blocked property. 576.301 Section 576.301 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY IRAQ STABILIZATION AND INSURGENCY...

  7. 31 CFR 576.301 - Blocked account; blocked property.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 31 Money and Finance:Treasury 3 2013-07-01 2013-07-01 false Blocked account; blocked property. 576.301 Section 576.301 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY IRAQ STABILIZATION AND INSURGENCY...

  8. 31 CFR 562.301 - Blocked account; blocked property.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 31 Money and Finance:Treasury 3 2012-07-01 2012-07-01 false Blocked account; blocked property. 562.301 Section 562.301 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY IRANIAN HUMAN RIGHTS ABUSES...

  9. 31 CFR 562.301 - Blocked account; blocked property.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 31 Money and Finance:Treasury 3 2014-07-01 2014-07-01 false Blocked account; blocked property. 562.301 Section 562.301 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY IRANIAN HUMAN RIGHTS ABUSES...

  10. 31 CFR 562.301 - Blocked account; blocked property.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 31 Money and Finance:Treasury 3 2011-07-01 2011-07-01 false Blocked account; blocked property. 562.301 Section 562.301 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY IRANIAN HUMAN RIGHTS ABUSES...

  11. 31 CFR 562.301 - Blocked account; blocked property.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 31 Money and Finance:Treasury 3 2013-07-01 2013-07-01 false Blocked account; blocked property. 562.301 Section 562.301 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY IRANIAN HUMAN RIGHTS ABUSES...

  12. Adjustable-Angle Drill Block

    NASA Technical Reports Server (NTRS)

    Gallimore, F. H.

    1986-01-01

    Adjustable angular drill block accurately transfers hole patterns from mating surfaces not normal to each other. Block applicable to transfer of nonperpendicular holes in mating contoured assemblies in aircraft industry. Also useful in general manufacturing to transfer mating installation holes to irregular and angular surfaces.

  13. Block Transfer Agreement Evaluation Project

    ERIC Educational Resources Information Center

    Bastedo, Helena

    2010-01-01

    The objective of this project is to evaluate for the British Columbia Council on Admissions and Transfer (BCCAT) the effectiveness of block transfer agreements (BTAs) in the BC Transfer System and recommend steps to be taken to improve their effectiveness. Findings of this study revealed that institutions want to expand block credit transfer;…

  14. Improved ultrasonic standard reference blocks

    NASA Technical Reports Server (NTRS)

    Eitzen, D. G.

    1975-01-01

    A program to improve the quality, reproducibility and reliability of nondestructive testing through the development of improved ASTM-type ultrasonic reference standards is described. Reference blocks of aluminum, steel, and titanium alloys were considered. Equipment representing the state-of-the-art in laboratory and field ultrasonic equipment was obtained and evaluated. Some RF and spectral data on ten sets of ultrasonic reference blocks were taken as part of a task to quantify the variability in response from nominally identical blocks. Techniques for residual stress, preferred orientation, and microstructural measurements were refined and are applied to a reference block rejected by the manufacturer during fabrication in order to evaluate the effect of metallurgical condition on block response.

  15. Building blocks for correlated superconductors and magnets

    NASA Astrophysics Data System (ADS)

    Sarrao, J. L.; Ronning, F.; Bauer, E. D.; Batista, C. D.; Zhu, J.-X.; Thompson, J. D.

    2015-04-01

    Recent efforts at Los Alamos to discover strongly correlated superconductors and hard ferromagnets are reviewed. While serendipity remains a principal engine of materials discovery, design principles and structural building blocks are beginning to emerge that hold potential for predictive discovery. Successes over the last decade with the so-called "115" strongly correlated superconductors are summarized, and more recent efforts to translate these insights and principles to novel hard magnets are discussed. While true "materials by design" remains a distant aspiration, progress is being made in coupling empirical design principles to electronic structure simulation to accelerate and guide materials design and synthesis.

  16. Building blocks for correlated superconductors and magnets

    SciTech Connect

    Sarrao, J. L.; Ronning, F.; Bauer, E. D.; Batista, C. D.; Zhu, J. -X.; Thompson, J. D.

    2015-04-01

    Recent efforts at Los Alamos to discover strongly correlated superconductors and hard ferromagnets are reviewed. While serendipity remains a principal engine of materials discovery, design principles and structural building blocks are beginning to emerge that hold potential for predictive discovery. Successes over the last decade with the so-called “115” strongly correlated superconductors are summarized, and more recent efforts to translate these insights and principles to novel hard magnets are discussed. While true “materials by design” remains a distant aspiration, progress is being made in coupling empirical design principles to electronic structure simulation to accelerate and guide materials design and synthesis.

  17. Block tridiagonal matrix inversion and fast transmission calculations

    SciTech Connect

    Petersen, Dan Erik Sorensen, Hans Henrik B.; Hansen, Per Christian; Skelboe, Stig; Stokbro, Kurt

    2008-03-01

    A method for the inversion of block tridiagonal matrices encountered in electronic structure calculations is developed, with the goal of efficiently determining the matrices involved in the Fisher-Lee relation for the calculation of electron transmission coefficients. The new method leads to faster transmission calculations compared to traditional methods, as well as freedom in choosing alternate Green's function matrix blocks for transmission calculations. The new method also lends itself to calculation of the tridiagonal part of the Green's function matrix. The effect of inaccuracies in the electrode self-energies on the transmission coefficient is analyzed and reveals that the new algorithm is potentially more stable towards such inaccuracies.

  18. Atrioventricular block after ASD closure

    PubMed Central

    Asakai, Hiroko; Weskamp, Sofia; Eastaugh, Lucas; d'Udekem, Yves; Pflaumer, Andreas

    2016-01-01

    Objective Secundum atrial septal defect (ASD) is a common congenital heart defect. There is limited data on both early and late atrioventricular (AV) block post ASD closure. The aim of this study was to determine the incidence and risk factors of AV block associated with ASD closure. Methods A retrospective analysis of all patients who underwent ASD closure either with a device or surgical method at the Royal Children's Hospital Melbourne between 1996 and 2010 was performed. Baseline demographics, procedural details and follow-up data were collected from medical records. Results A total of 378 patients were identified; 242 in the device group and 136 in the surgical group. Fourteen patients (3.7%) had AV block (1 with second degree and 13 with first degree) at a median follow-up of 28 months; 11/242 (4.5%) in the device group and 3/135 (2.2%) in the surgical group (p=0.39). Six patients had new-onset AV block after ASD closure. In the device subgroup, patients with AV block at follow-up had a larger indexed device size compared with those without (22 (15–31) vs 18(7–38), p=0.02). Multivariate analysis revealed the presence of AV block either pre procedure or post procedure to be the only variables associated with late AV block. Conclusions Late AV block in patients with repaired ASD is rare and most likely independent of the technique used. In the device subgroup, the only risk factor identified to be associated with late AV block was the presence of either preprocedural or postprocedural AV block, so long-term follow-up for these patients should be provided. PMID:27540418

  19. Block Curricula: A Guide to Teaching with Unit Blocks and Hollow Blocks in the Classroom.

    ERIC Educational Resources Information Center

    Clark, Phyllis; Tiedemann, Nancy

    This curriculum guide for preschool teachers was designed for use with wooden unit and hollow blocks to foster a variety of math, science, language, and social skills. Following an introduction to the curriculum and a discussion of cooperative learning and stages of block building, the guide is divided into three parts. Part 1 of the guide, "Unit…

  20. Criminal Justice Systems. Block I: Law Enforcement. Block II: The Courts. Block III: Corrections. Block IV: Community Relations. Block V: Proficiency Skills. Block VI: Criminalistics. Student Guide.

    ERIC Educational Resources Information Center

    Florida State Dept. of Education, Tallahassee. Div. of Vocational, Adult, and Community Education.

    This student guide together with an instructor guide comprise a set of curriculum materials on the criminal justice system. The student guide contains self-contained instructional material that students can study at their own pace most of the time. Six major subject areas or blocks, which are further broken down into several units, with some units…

  1. Criminal Justice Systems. Block I: Law Enforcement. Block II: The Courts. Block III: Corrections. Block IV: Community Relations. Block V: Proficiency Skills. Block VI: Criminalistics. Instructor Guide.

    ERIC Educational Resources Information Center

    Florida State Dept. of Education, Tallahassee. Div. of Vocational, Adult, and Community Education.

    This instructor guide together with a student guide comprise a set of curriculum materials on the criminal justice system. The instructor guide is a resource for planning and managing individualized, competency-based instruction in six major subject areas or blocks, which are further broken down into several units with some units having several…

  2. Impact of Gate and Passivation Structures on Current Collapse of AlGaN/GaN High-Electron-Mobility Transistors under Off-State-Bias Stress

    NASA Astrophysics Data System (ADS)

    Tajima, Masafumi; Hashizume, Tamotsu

    2011-06-01

    Using a dual-gate structure, we have investigated the impact of gate-stress position on the current collapse behavior of AlGaN/GaN high-electron-mobility transistors (HEMTs) without surface passivation. When the gate-bias stress under the off state was applied to the additional gate between the main gate and the drain electrode, we observed a marked increase in on-resistance (RON). On the other hand, the off-state stress on the main gate itself caused a decrease in drain saturation current as well as an increase in RON. The calculation of electric field at the AlGaN surface showed that the field peaks existed at the gate edges on both the drain and source sides, probably causing electron charging at the AlGaN surface near both gate-edge areas. These results indicated that the off-state gate stress induces “virtual gates” in the gate edges expanding in both the drain and source directions. The impacts of device structures on the current collapse have been characterized, using Schottky-gate HEMTs with and without surface passivation and metal-oxide-semiconductor (MOS) gate HEMTs. The surface passivation and MOS-gate structure was effective in mitigating current collapse, which was explained in terms of surface state density, electric field strength, and gate leakage current.

  3. 1-2-3 Blocks: Beginning Block Activities for Young Children.

    ERIC Educational Resources Information Center

    Petersen, Evelyn

    This book discusses ways that blocks can be used with young children to help them develop different intellectual, motor, and social skills. The book is divided into four sections organized by block type: (1) unit blocks; (2) hollow blocks; (3) table blocks; and (4) homemade blocks. Each section describes the block type, gives reasons for using the…

  4. 31 CFR 560.322 - Blocked account; blocked property.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... name of the Government of Iran, any Iranian financial institution, or any other person whose property and interests in property are blocked pursuant to § 560.211, or in which the Government of Iran,...

  5. Oligoaniline-containing supramolecular block copolymer nanodielectric materials.

    PubMed

    Hardy, Christopher G; Islam, Md Sayful; Gonzalez-Delozier, Dioni; Ploehn, Harry J; Tang, Chuanbing

    2012-05-14

    We report a new generation of nanodielectric energy storage materials based on supramolecular block copolymers. In our approach, highly polarizable, conducting nanodomains are embedded within an insulating matrix through block copolymer microphase separation. An applied electric field leads to electronic polarization of the conducting domains. The high interfacial area of microphase-separated domains amplifies the polarization, leading to high dielectric permittivity. Specifically, reversible addition fragmentation transfer (RAFT) polymerization was used to prepare block copolymers with poly(methyl acrylate) (PMA) as the insulating segment and a strongly acidic dopant moiety, poly-(2-acrylamido-2-methyl-1-propanesulfonic acid) (PAMPSA), as the basis for the conducting segment. The PAMPSA block was complexed with an oligoaniline trimer to form a dopant-conjugated moiety complex that is electronically conductive after oxidation. For the undoped neat block copolymers, the increase of the PMA block length leads to a transition in dielectric properties from ionic conductor to dielectric capacitor with polarization resulting from migration of protons within the isolated PAMPSA domains. The oligoaniline-doped copolymers show remarkably different dielectric properties. At frequencies above 200 kHz, they exhibit characteristics of dielectric capacitors with much higher permittivity and lower dielectric loss than the corresponding undoped copolymers. PMID:22331602

  6. Oligoaniline-containing supramolecular block copolymer nanodielectric materials.

    PubMed

    Hardy, Christopher G; Islam, Md Sayful; Gonzalez-Delozier, Dioni; Ploehn, Harry J; Tang, Chuanbing

    2012-05-14

    We report a new generation of nanodielectric energy storage materials based on supramolecular block copolymers. In our approach, highly polarizable, conducting nanodomains are embedded within an insulating matrix through block copolymer microphase separation. An applied electric field leads to electronic polarization of the conducting domains. The high interfacial area of microphase-separated domains amplifies the polarization, leading to high dielectric permittivity. Specifically, reversible addition fragmentation transfer (RAFT) polymerization was used to prepare block copolymers with poly(methyl acrylate) (PMA) as the insulating segment and a strongly acidic dopant moiety, poly-(2-acrylamido-2-methyl-1-propanesulfonic acid) (PAMPSA), as the basis for the conducting segment. The PAMPSA block was complexed with an oligoaniline trimer to form a dopant-conjugated moiety complex that is electronically conductive after oxidation. For the undoped neat block copolymers, the increase of the PMA block length leads to a transition in dielectric properties from ionic conductor to dielectric capacitor with polarization resulting from migration of protons within the isolated PAMPSA domains. The oligoaniline-doped copolymers show remarkably different dielectric properties. At frequencies above 200 kHz, they exhibit characteristics of dielectric capacitors with much higher permittivity and lower dielectric loss than the corresponding undoped copolymers.

  7. Revisiting {N}=4 superconformal blocks

    NASA Astrophysics Data System (ADS)

    Bissi, Agnese; Łukowski, Tomasz

    2016-02-01

    We study four-point correlation functions of four generic half-BPS supermultiplets of {N}=4 SCFT in four dimensions. We use the two-particle Casimir of four-dimensional superconformal algebra to derive superconformal blocks which contribute to the partial wave expansion of such correlators. The derived blocks are defined on analytic superspace and allow us in principle to find any component of the four-point correlator. The lowest component of the result agrees with the superconformal blocks found by Dolan and Osborn.

  8. Block Copolymer Membranes for Efficient Capture of a Chemotherapy Drug

    PubMed Central

    2016-01-01

    We introduce the use of block copolymer membranes for an emerging application, “drug capture”. The polymer is incorporated in a new class of biomedical devices, referred to as ChemoFilter, which is an image-guided temporarily deployable endovascular device designed to increase the efficacy of chemotherapy-based cancer treatment. We show that block copolymer membranes consisting of functional sulfonated polystyrene end blocks and a structural polyethylene middle block (S-SES) are capable of capturing doxorubicin, a chemotherapy drug. We focus on the relationship between morphology of the membrane in the ChemoFilter device and efficacy of doxorubicin capture measured in vitro. Using small-angle X-ray scattering and cryogenic scanning transmission electron microscopy, we discovered that rapid doxorubicin capture is associated with the presence of water-rich channels in the lamellar-forming S-SES membranes in aqueous environment. PMID:27547493

  9. Ultrasound guided axillary brachial plexus block.

    PubMed

    Ranganath, Anil; Srinivasan, Karthikeyan Kallidaikurichi; Iohom, Gabriella

    2014-09-01

    The axillary brachial plexus block is the most widely performed upper limb block. It is relatively simple to perform and one of the safest approaches to brachial plexus block. With the advent of ultrasound technology, there is a marked improvement in the success rate of the axillary block. This review will focus on the technique of ultrasound guided axillary brachial plexus block. PMID:25110766

  10. The Building Blocks of Geology.

    ERIC Educational Resources Information Center

    Gibson, Betty O.

    2001-01-01

    Discusses teaching techniques for teaching about rocks, minerals, and the differences between them. Presents a model-building activity that uses plastic building blocks to build crystal and rock models. (YDS)

  11. Ear - blocked at high altitudes

    MedlinePlus

    ... ears; Flying and blocked ears; Eustachian tube dysfunction - high altitude ... the middle ear and the back of the nose and upper throat. ... down from high altitudes. Chewing gum the entire time you are ...

  12. Atrioventricular block, ECG tracing (image)

    MedlinePlus

    ... abnormal rhythm (arrhythmia) called an atrioventricular (AV) block. P waves show that the top of the heart received electrical activity. Each P wave is usually followed by the tall (QRS) waves. ...

  13. Recursion relations for conformal blocks

    NASA Astrophysics Data System (ADS)

    Penedones, João; Trevisani, Emilio; Yamazaki, Masahito

    2016-09-01

    In the context of conformal field theories in general space-time dimension, we find all the possible singularities of the conformal blocks as functions of the scaling dimension Δ of the exchanged operator. In particular, we argue, using representation theory of parabolic Verma modules, that in odd spacetime dimension the singularities are only simple poles. We discuss how to use this information to write recursion relations that determine the conformal blocks. We first recover the recursion relation introduced in [1] for conformal blocks of external scalar operators. We then generalize this recursion relation for the conformal blocks associated to the four point function of three scalar and one vector operator. Finally we specialize to the case in which the vector operator is a conserved current.

  14. Carbon-carbon cylinder block

    NASA Technical Reports Server (NTRS)

    Ransone, Philip O. (Inventor)

    1998-01-01

    A lightweight cylinder block composed of carbon-carbon is disclosed. The use of carbon-carbon over conventional materials, such as cast iron or aluminum, reduces the weight of the cylinder block and improves thermal efficiency of the internal combustion reciprocating engine. Due to the negligible coefficient of thermal expansion and unique strength at elevated temperatures of carbon-carbon, the piston-to-cylinder wall clearance can be small, especially when the carbon-carbon cylinder block is used in conjunction with a carbon-carbon piston. Use of the carbon-carbon cylinder block has the effect of reducing the weight of other reciprocating engine components allowing the piston to run at higher speeds and improving specific engine performance.

  15. Building blocks for N-type molecular and polymeric electronics. Perfluoroalkyl- versus alkyl-functionalized oligothiophenes (nTs; n = 2-6). Systematic synthesis, spectroscopy, electrochemistry, and solid-state organization.

    PubMed

    Facchetti, Antonio; Yoon, Myung-Han; Stern, Charlotte L; Hutchison, Geoffrey R; Ratner, Mark A; Marks, Tobin J

    2004-10-20

    The synthesis, comparative physicochemical properties, and solid-state structures of five oligothiophene (nT) series differing in substituent nature and attachment, regiochemistry, and oligothiophene core length (n) are described. These five series include the following 25 compounds: (i) alpha,omega-diperfluorohexyl-nTs 1 (DFH-nTs, n = 2-6), (ii) beta,beta'-diperfluorohexyl-nTs 2 (isoDFH-nTs, n = 2-6), (iii) alpha,omega-dihexyl-nTs 3 (DH-nTs, n = 2-6), (iv) beta,beta'-dihexyl-nTs 4 (isoDH-nTs, n = 2-6), and (v) unsubstituted oligothiophenes 5 (alphanTs, n = 2-6). All new compounds were characterized by elemental analysis, mass spectrometry, and multinuclear NMR spectroscopy. To probe and address quantitatively how the chemistry and regiochemistry of conjugated core substitution affects molecular and solid-state properties, the entire 1-5 series was investigated by differential scanning calorimetry, thermogravimetric analysis, and optical absorption and emission spectroscopies. Single-crystal X-ray diffraction data for several fluorocarbon-substituted oligomers are also presented and compared. The combined analysis of these data indicates that fluorocarbon-substituted nT molecules strongly interact in the condensed state, with unit cell level phase separation between the aromatic core and fluorocarbon chains. Surprisingly, despite these strong intermolecular interactions, high solid-state fluorescence efficiencies are exhibited by the fluorinated derivatives. Insight into the solution molecular geometries and conformational behavior are obtained from analysis of optical and variable-temperature NMR spectra. Finally, cyclic voltammetry data offer a reliable picture of frontier MO energies, which, in combination with DFT computations, provide key information on relationships between oligothiophene substituent effects and electronic response properties.

  16. Skin delivery by block copolymer nanoparticles (block copolymer micelles).

    PubMed

    Laredj-Bourezg, Faiza; Bolzinger, Marie-Alexandrine; Pelletier, Jocelyne; Valour, Jean-Pierre; Rovère, Marie-Rose; Smatti, Batoule; Chevalier, Yves

    2015-12-30

    Block copolymer nanoparticles often referred to as "block copolymer micelles" have been assessed as carriers for skin delivery of hydrophobic drugs. Such carriers are based on organic biocompatible and biodegradable materials loaded with hydrophobic drugs: poly(lactide)-block-poly(ethylene glycol) copolymer (PLA-b-PEG) nanoparticles that have a solid hydrophobic core made of glassy poly(d,l-lactide), and poly(caprolactone)-block-poly(ethylene glycol) copolymer (PCL-b-PEG) nanoparticles having a liquid core of polycaprolactone. In vitro skin absorption of all-trans retinol showed a large accumulation of retinol in stratum corneum from both block copolymer nanoparticles, higher by a factor 20 than Polysorbate 80 surfactant micelles and by a factor 80 than oil solution. Additionally, skin absorption from PLA-b-PEG nanoparticles was higher by one order of magnitude than PCL-b-PEG, although their sizes (65nm) and external surface (water-swollen PEG layer) were identical as revealed by detailed structural characterizations. Fluorescence microscopy of histological skin sections provided a non-destructive picture of the storage of Nile Red inside stratum corneum, epidermis and dermis. Though particle cores had a different physical states (solid or liquid as measured by (1)H NMR), the ability of nanoparticles for solubilization of the drug assessed from their Hildebrand solubility parameters appeared the parameter of best relevance regarding skin absorption.

  17. Nanopatterning of recombinant proteins and viruses using block copolymer templates

    NASA Astrophysics Data System (ADS)

    Cresce, Arthur Von Wald

    The study of interfaces is important in understanding biological interactions, including cellular signaling and virus infection. This thesis is an original effort to examine the interaction between a block copolymer and both a protein and a virus. Block copolymers intrinsically form nanometer-scale structures over large areas without expensive processing, making them ideal for the synthesis of the nanopatterned surfaces used in this study. The geometry of these nanostructures can be easily tuned for different applications by altering the block ratio and composition of the block copolymer. Block copolymers can be used for controlled uptake of metal ions, where one block selectively binds metal ions while the other does not. 5-norbornene-2,3-dicarboxylic acid is synthesized through ring-opening metathesis polymerization. It formed spherical domains with spheres approximately 30 nm in diameter, and these spheres were then subsequently loaded with nickel ion. This norbornene block copolymer was tested for its ability to bind histidine-tagged green fluorescent protein (hisGFP), and it was found that the nickel-loaded copolymer was able to retain hisGFP through chelation between the histidine tag and the metal-containing portions of the copolymer surface. Poly(styrene-b-4-vinylpyridine) (PS/P4VP) was also loaded with nickel, forming a cylindrical microstructure. The binding of Tobacco mosaic virus and Tobacco necrosis virus was tested through Tween 20 detergent washes. Electron microscopy allowed for observation of both block copolymer nanostructures and virus particles. Results showed that Tween washes could not remove bound Tobacco mosaic virus from the surface of PS/P4VP. It was also seen that the size and tunability of block copolymers and the lack of processing needed to attain different structures makes them attractive for many applications, including microfluidic devices, surfaces to influence cellular signaling and growth, and as a nanopatterning surface for

  18. Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Fontserè, A.; Pérez-Tomás, A.; Placidi, M.; Llobet, J.; Baron, N.; Chenot, S.; Cordier, Y.; Moreno, J. C.; Jennings, M. R.; Gammon, P. M.; Fisher, C. A.; Iglesias, V.; Porti, M.; Bayerl, A.; Lanza, M.; Nafría, M.

    2012-10-01

    AlGaN/GaN HEMTs are devices which are strongly influenced by surface properties such as donor states, roughness or any kind of inhomogeneity. The electron gas is only a few nanometers away from the surface and the transistor forward and reverse currents are considerably affected by any variation of surface property within the atomic scale. Consequently, we have used the technique known as conductive AFM (CAFM) to perform electrical characterization at the nanoscale. The AlGaN/GaN HEMT ohmic (drain and source) and Schottky (gate) contacts were investigated by the CAFM technique. The estimated area of these highly conductive pillars (each of them of approximately 20-50 nm radius) represents around 5% of the total contact area. Analogously, the reverse leakage of the gate Schottky contact at the nanoscale seems to correlate somehow with the topography of the narrow AlGaN barrier regions producing larger currents.

  19. Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors.

    PubMed

    Fontserè, A; Pérez-Tomás, A; Placidi, M; Llobet, J; Baron, N; Chenot, S; Cordier, Y; Moreno, J C; Jennings, M R; Gammon, P M; Fisher, C A; Iglesias, V; Porti, M; Bayerl, A; Lanza, M; Nafría, M

    2012-10-01

    AlGaN/GaN HEMTs are devices which are strongly influenced by surface properties such as donor states, roughness or any kind of inhomogeneity. The electron gas is only a few nanometers away from the surface and the transistor forward and reverse currents are considerably affected by any variation of surface property within the atomic scale. Consequently, we have used the technique known as conductive AFM (CAFM) to perform electrical characterization at the nanoscale. The AlGaN/GaN HEMT ohmic (drain and source) and Schottky (gate) contacts were investigated by the CAFM technique. The estimated area of these highly conductive pillars (each of them of approximately 20-50 nm radius) represents around 5% of the total contact area. Analogously, the reverse leakage of the gate Schottky contact at the nanoscale seems to correlate somehow with the topography of the narrow AlGaN barrier regions producing larger currents.

  20. Characterization of interface states in Al{sub 2}O{sub 3}/AlGaN/GaN structures for improved performance of high-electron-mobility transistors

    SciTech Connect

    Hori, Y.; Yatabe, Z.; Hashizume, T.

    2013-12-28

    We have investigated the relationship between improved electrical properties of Al{sub 2}O{sub 3}/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) and electronic state densities at the Al{sub 2}O{sub 3}/AlGaN interface evaluated from the same structures as the MOS-HEMTs. To evaluate Al{sub 2}O{sub 3}/AlGaN interface state densities of the MOS-HEMTs, two types of capacitance-voltage (C-V) measurement techniques were employed: the photo-assisted C-V measurement for the near-midgap states and the frequency dependent C-V characteristics for the states near the conduction-band edge. To reduce the interface states, an N{sub 2}O-radical treatment was applied to the AlGaN surface just prior to the deposition of the Al{sub 2}O{sub 3} insulator. As compared to the sample without the treatment, the N{sub 2}O-radical treated Al{sub 2}O{sub 3}/AlGaN/GaN structure showed smaller frequency dispersion of the C-V curves in the positive gate bias range. The state densities at the Al{sub 2}O{sub 3}/AlGaN interface were estimated to be 1 × 10{sup 12} cm{sup −2} eV{sup −1} or less around the midgap and 8 × 10{sup 12} cm{sup −2} eV{sup −1} near the conduction-band edge. In addition, we observed higher maximum drain current at the positive gate bias and suppressed threshold voltage instability under the negative gate bias stress even at 150 °C. Results presented in this paper indicated that the N{sub 2}O-radical treatment is effective both in reducing the interface states and improving the electrical properties of the Al{sub 2}O{sub 3}/AlGaN/GaN MOS-HEMTs.

  1. Patchy micelles based on coassembly of block copolymer chains and block copolymer brushes on silica particles.

    PubMed

    Zhu, Shuzhe; Li, Zhan-Wei; Zhao, Hanying

    2015-04-14

    Patchy particles are a type of colloidal particles with one or more well-defined patches on the surfaces. The patchy particles with multiple compositions and functionalities have found wide applications from the fundamental studies to practical uses. In this research patchy micelles with thiol groups in the patches were prepared based on coassembly of free block copolymer chains and block copolymer brushes on silica particles. Thiol-terminated and cyanoisopropyl-capped polystyrene-block-poly(N-isopropylacrylamide) block copolymers (PS-b-PNIPAM-SH and PS-b-PNIPAM-CIP) were synthesized by reversible addition-fragmentation chain transfer polymerization and chemical modifications. Pyridyl disulfide-functionalized silica particles (SiO2-SS-Py) were prepared by four-step surface chemical reactions. PS-b-PNIPAM brushes on silica particles were prepared by thiol-disulfide exchange reaction between PS-b-PNIPAM-SH and SiO2-SS-Py. Surface micelles on silica particles were prepared by coassembly of PS-b-PNIPAM-CIP and block copolymer brushes. Upon cleavage of the surface micelles from silica particles, patchy micelles with thiol groups in the patches were obtained. Dynamic light scattering, transmission electron microscopy, and zeta-potential measurements demonstrate the preparation of patchy micelles. Gold nanoparticles can be anchored onto the patchy micelles through S-Au bonds, and asymmetric hybrid structures are formed. The thiol groups can be oxidized to disulfides, which results in directional assembly of the patchy micelles. The self-assembly behavior of the patchy micelles was studied experimentally and by computer simulation. PMID:25811763

  2. Nanoscale Building Blocks and Nanoassembly of Structures

    NASA Astrophysics Data System (ADS)

    Ozkan, Cengiz

    2003-03-01

    Electronics and photonics industries are highly interested in developing new methods for nanofabrication in order to be able to continue their long-term trend of building ever smaller, faster and less expensive devices. Conventional patterning strategies must be augmented by new techniques in order to truly take advantage of the quantum nature of novel nanoscale devices. In our research, we are developing a bottom-up approach to fabricate building blocks, which can be used to assemble nanostructures and devices. This involves the assembly of atom- and molecule-like nanostructures into functional 2-D and 3-D units. This will take advantage of the unique optical, electronic, and size-tunable properties of nanostructures and permit the use of these properties for "real" applications in a larger system (> 10 nm and < 1 um). Here, we demonstrate a novel technique for the fabrication of nano-assemblies of carbon nanotubes (CNT) and quantum dots (QD) (CNT-QD conjugates) for the first time using a zero length cross-linker. CNT's are primarily functionalized with carboxylic end groups by oxidation in concentrated sulfuric acid. Thiol stabilized QD's in aqueous solution with amino end groups were prepared in the laboratory. The ethylene carbodiimide coupling reaction was used to achieve the CNT-QD conjugation. Sulfo-N-Hydroxysuccinimide (sulfo-NHS) was used to enhance this coupling procedure. We present EDS and FTIR data for the chemical modification and SEM images of the first nano-building blocks. Current work includes the more complex 3-D assembly of QD's and nanotubes on Anodized Aluminum Oxide (AAO) template for nanodevices. Potential future applications of our method include the fabrication of novel electronic and photonic devices, crystal displays and biosensors.

  3. X2000 power system electronics development

    NASA Technical Reports Server (NTRS)

    Carr, Greg; Deligiannis, Frank; Franco, Lauro; Jones, Loren; Lam, Barbara; Nelson, Ron; Pantaleon, Jose; Ruiz, Ian; Treichler, John; Wester, Gene; Sauers, Jim; Giampoli, Paul; Haskell, Russ; Mulvey, Jim; Repp, John

    2005-01-01

    The X2000 Power System Electronics (PSE) is a Jet Propulsion Laboratory (JPL) task to develop a new generation of power system building blocks for potential use on future deep space missions. The effort includes the development of electronic components and modules that can be used as building blocks in the design of generic spacecraft power systems.

  4. Chirped-Superlattice, Blocked-Intersubband QWIP

    NASA Technical Reports Server (NTRS)

    Gunapala, Sarath; Ting, David; Bandara, Sumith

    2004-01-01

    An Al(x)Ga(1-x)As/GaAs quantum-well infrared photodetector (QWIP) of the blocked-intersubband-detector (BID) type, now undergoing development, features a chirped (that is, aperiodic) superlattice. The purpose of the chirped superlattice is to increase the quantum efficiency of the device. A somewhat lengthy background discussion is necessary to give meaning to a brief description of the present developmental QWIP. A BID QWIP was described in "MQW Based Block Intersubband Detector for Low-Background Operation" (NPO-21073), NASA Tech Briefs Vol. 25, No. 7 (July 2001), page 46. To recapitulate: The BID design was conceived in response to the deleterious effects of operation of a QWIP at low temperature under low background radiation. These effects can be summarized as a buildup of space charge and an associated high impedance and diminution of responsivity with increasing modulation frequency. The BID design, which reduces these deleterious effects, calls for a heavily doped multiple-quantum-well (MQW) emitter section with barriers that are thinner than in prior MQW devices. The thinning of the barriers results in a large overlap of sublevel wave functions, thereby creating a miniband. Because of sequential resonant quantum-mechanical tunneling of electrons from the negative ohmic contact to and between wells, any space charge is quickly neutralized. At the same time, what would otherwise be a large component of dark current attributable to tunneling current through the whole device is suppressed by placing a relatively thick, undoped, impurity-free AlxGa1 x As blocking barrier layer between the MQW emitter section and the positive ohmic contact. [This layer is similar to the thick, undoped Al(x)Ga(1-x)As layers used in photodetectors of the blocked-impurity-band (BIB) type.] Notwithstanding the aforementioned advantage afforded by the BID design, the responsivity of a BID QWIP is very low because of low collection efficiency, which, in turn, is a result of low

  5. A standardized block fabrication technique

    SciTech Connect

    Famiglietti, R.; Noriega, B.; Sanders, R. )

    1990-01-01

    The accuracy of delivered dose is a primary goal in every radiation therapy department. Improved imaging techniques now enable the radiation therapist to define more precisely the area of interest, which helps the sparing of normal surrounding tissue. Tray-mounted customized blocks are routinely used to define this treatment portal accurately and reproducibly. However, the level of accuracy is dependent on the block fabrication technique and the skill of the block cutter. We at Moffitt Cancer Center have standardized our system in a way that minimizes some of the human errors, while keeping the procedure fast and accurate. This system uses a tray template that simulates our blocking trays. The function of this tray is to position the styrofoam (and therefore the cerrobend block) on the tray in such a way as to insure proper alignment with the treatment machine. We also feel this improves upon some common designs using random holes or hole patterns, which may interfere with the treatment area. This system is not overly sophisticated and can be easily implemented in most radiation therapy departments.

  6. Block Matching for Object Tracking

    SciTech Connect

    Gyaourova, A; Kamath, C; Cheung, S

    2003-10-13

    Models which describe road traffic patterns can be helpful in detection and/or prevention of uncommon and dangerous situations. Such models can be built by the use of motion detection algorithms applied to video data. Block matching is a standard technique for encoding motion in video compression algorithms. We explored the capabilities of the block matching algorithm when applied for object tracking. The goal of our experiments is two-fold: (1) to explore the abilities of the block matching algorithm on low resolution and low frame rate video and (2) to improve the motion detection performance by the use of different search techniques during the process of block matching. Our experiments showed that the block matching algorithm yields good object tracking results and can be used with high success on low resolution and low frame rate video data. We observed that different searching methods have small effect on the final results. In addition, we proposed a technique based on frame history, which successfully overcame false motion caused by small camera movements.

  7. Morphological studies on block copolymer modified PA 6 blends

    NASA Astrophysics Data System (ADS)

    Poindl, M.; Bonten, C.

    2014-05-01

    Recent studies show that compounding polyamide 6 (PA 6) with a PA 6 polyether block copolymers made by reaction injection molding (RIM) or continuous anionic polymerization in a reactive extrusion process (REX) result in blends with high impact strength and high stiffness compared to conventional rubber blends. In this paper, different high impact PA 6 blends were prepared using a twin screw extruder. The different impact modifiers were an ethylene propylene copolymer, a PA PA 6 polyether block copolymer made by reaction injection molding and one made by reactive extrusion. To ensure good particle matrix bonding, the ethylene propylene copolymer was grafted with maleic anhydride (EPR-g-MA). Due to the molecular structure of the two block copolymers, a coupling agent was not necessary. The block copolymers are semi-crystalline and partially cross-linked in contrast to commonly used amorphous rubbers which are usually uncured. The combination of different analysis methods like atomic force microscopy (AFM), transmission electron microscopy (TEM) and scanning electron microscopy (SEM) gave a detailed view in the structure of the blends. Due to the partial cross-linking, the particles of the block copolymers in the blends are not spherical like the ones of ethylene propylene copolymer. The differences in molecular structure, miscibility and grafting of the impact modifiers result in different mechanical properties and different blend morphologies.

  8. Morphological studies on block copolymer modified PA 6 blends

    SciTech Connect

    Poindl, M. E-mail: christian.bonten@ikt.uni-stuttgart.de; Bonten, C. E-mail: christian.bonten@ikt.uni-stuttgart.de

    2014-05-15

    Recent studies show that compounding polyamide 6 (PA 6) with a PA 6 polyether block copolymers made by reaction injection molding (RIM) or continuous anionic polymerization in a reactive extrusion process (REX) result in blends with high impact strength and high stiffness compared to conventional rubber blends. In this paper, different high impact PA 6 blends were prepared using a twin screw extruder. The different impact modifiers were an ethylene propylene copolymer, a PA PA 6 polyether block copolymer made by reaction injection molding and one made by reactive extrusion. To ensure good particle matrix bonding, the ethylene propylene copolymer was grafted with maleic anhydride (EPR-g-MA). Due to the molecular structure of the two block copolymers, a coupling agent was not necessary. The block copolymers are semi-crystalline and partially cross-linked in contrast to commonly used amorphous rubbers which are usually uncured. The combination of different analysis methods like atomic force microscopy (AFM), transmission electron microscopy (TEM) and scanning electron microscopy (SEM) gave a detailed view in the structure of the blends. Due to the partial cross-linking, the particles of the block copolymers in the blends are not spherical like the ones of ethylene propylene copolymer. The differences in molecular structure, miscibility and grafting of the impact modifiers result in different mechanical properties and different blend morphologies.

  9. Toy Blocks and Rotational Physics

    NASA Astrophysics Data System (ADS)

    Varieschi, Gabriele U.; Jully, Isabel R.

    2005-09-01

    Have you ever observed a child playing with toy blocks? A favorite game is to build towers and then make them topple like falling trees. To the eye of a trained physicist this should immediately look like an example of the physics of "falling chimneys," when tall structures bend and break in mid-air while falling to the ground. The game played with toy blocks can actually reproduce well what is usually seen in photographs of falling towers, such as the one that appeared on the cover of the September 1976 issue of The Physics Teacher. In this paper we describe how we performed and analyzed these simple but interesting experiments with toy blocks.

  10. Radial coordinates for conformal blocks

    NASA Astrophysics Data System (ADS)

    Hogervorst, Matthijs; Rychkov, Slava

    2013-05-01

    We develop the theory of conformal blocks in CFTd expressing them as power series with Gegenbauer polynomial coefficients. Such series have a clear physical meaning when the conformal block is analyzed in radial quantization: individual terms describe contributions of descendants of a given spin. Convergence of these series can be optimized by a judicious choice of the radial quantization origin. We argue that the best choice is to insert the operators symmetrically. We analyze in detail the resulting “ρ-series” and show that it converges much more rapidly than for the commonly used variable z. We discuss how these conformal block representations can be used in the conformal bootstrap. In particular, we use them to derive analytically some bootstrap bounds whose existence was previously found numerically.

  11. Automatic blocking of nested loops

    NASA Technical Reports Server (NTRS)

    Schreiber, Robert; Dongarra, Jack J.

    1990-01-01

    Blocked algorithms have much better properties of data locality and therefore can be much more efficient than ordinary algorithms when a memory hierarchy is involved. On the other hand, they are very difficult to write and to tune for particular machines. The reorganization is considered of nested loops through the use of known program transformations in order to create blocked algorithms automatically. The program transformations used are strip mining, loop interchange, and a variant of loop skewing in which invertible linear transformations (with integer coordinates) of the loop indices are allowed. Some problems are solved concerning the optimal application of these transformations. It is shown, in a very general setting, how to choose a nearly optimal set of transformed indices. It is then shown, in one particular but rather frequently occurring situation, how to choose an optimal set of block sizes.

  12. Block-based neural networks.

    PubMed

    Moon, S W; Kong, S G

    2001-01-01

    This paper presents a novel block-based neural network (BBNN) model and the optimization of its structure and weights based on a genetic algorithm. The architecture of the BBNN consists of a 2D array of fundamental blocks with four variable input/output nodes and connection weights. Each block can have one of four different internal configurations depending on the structure settings, The BBNN model includes some restrictions such as 2D array and integer weights in order to allow easier implementation with reconfigurable hardware such as field programmable logic arrays (FPGA). The structure and weights of the BBNN are encoded with bit strings which correspond to the configuration bits of FPGA. The configuration bits are optimized globally using a genetic algorithm with 2D encoding and modified genetic operators. Simulations show that the optimized BBNN can solve engineering problems such as pattern classification and mobile robot control. PMID:18244385

  13. Block ground interaction of rockfalls

    NASA Astrophysics Data System (ADS)

    Volkwein, Axel; Gerber, Werner; Kummer, Peter

    2016-04-01

    During a rockfall the interaction of the falling block with the ground is one of the most important factors that define the evolution of a rockfall trajectory. It steers the rebound, the rotational movement, possibly brake effects, friction losses and damping effects. Therefore, if most reliable rockfall /trajectory simulation software is sought a good understanding of the block ground interaction is necessary. Today's rockfall codes enable the simulation of a fully 3D modelled block within a full 3D surface . However, the details during the contact, i.e. the contact duration, the penetration depth or the dimension of the marks in the ground are usually not part of the simulation. Recent field tests with rocks between 20 and 80 kg have been conducted on a grassy slope in 2014 [1]. A special rockfall sensor [2] within the blocks measured the rotational velocity and the acting accelerations during the tests. External video records and a so-called LocalPositioningSystem deliver information on the travel velocity. With these data not only the flight phases of the trajectories but also the contacts with the ground can be analysed. During the single jumps of a block the flight time, jump length, the velocity, and the rotation are known. During the single impacts their duration and the acting accelerations are visible. Further, the changes of rotational and translational velocity influence the next jump of the block. The change of the rotational velocity over the whole trajectory nicely visualizes the different phases of a rockfall regarding general acceleration and deceleration in respect to the inclination and the topography of the field. References: [1] Volkwein A, Krummenacher B, Gerber W, Lardon J, Gees F, Brügger L, Ott T (2015) Repeated controlled rockfall trajectory testing. [Abstract] Geophys. Res. Abstr. 17: EGU2015-9779. [2] Volkwein A, Klette J (2014) Semi-Automatic Determination of Rockfall Trajectories. Sensors 14: 18187-18210.

  14. Block LancZos PACKage

    2005-05-01

    BLZPACK (for Block LancZos PACKage) is a standard Fortran 77 implementation of the block Lanczos algorithm intended for the solution of the standard eigenvalue problem Ax=ux or the generalized eigenvalue problem Ax=uBx, where A and B are real, sparse symmetric matrices, u and eigenvalue and x and eigenvector. The development of this eigensolver was motivated by the need to solve large, sparse, generalized problems from free vibration analyses in structural engineering. Several upgrades were performedmore » afterwards aiming at the solution of eigenvalues problems from a wider range of applications.« less

  15. Block LancZos PACKage

    SciTech Connect

    Marques, Osni

    2005-05-01

    BLZPACK (for Block LancZos PACKage) is a standard Fortran 77 implementation of the block Lanczos algorithm intended for the solution of the standard eigenvalue problem Ax=ux or the generalized eigenvalue problem Ax=uBx, where A and B are real, sparse symmetric matrices, u and eigenvalue and x and eigenvector. The development of this eigensolver was motivated by the need to solve large, sparse, generalized problems from free vibration analyses in structural engineering. Several upgrades were performed afterwards aiming at the solution of eigenvalues problems from a wider range of applications.

  16. Teaching Numeracy, Language, and Literacy with Blocks

    ERIC Educational Resources Information Center

    Newburger, Abigail; Vaughan, Elizabeth

    2006-01-01

    By enhancing the block play in classrooms, teachers can help children acquire the emerging skills they need--with numbers, vocabulary, and reading--for kindergarten readiness. Newburger and Vaughan provide a theoretical foundation describing why and how to use blocks, and give guidance on selecting blocks and block safety. With chapters on the…

  17. Unit Blocks: A Curriculum for Early Learning.

    ERIC Educational Resources Information Center

    Banta, Mary Ann

    Teachers can use unit blocks as tools for directed learning activities, or blocks can be reserved for children's discovery learning experiences. To use unit blocks for discovery learning, children need adequate, protected space and sufficient, uninterrupted time. Given opportunities for free play with unit blocks, children progress through seven…

  18. Planning Block Play Experiences for Young Children.

    ERIC Educational Resources Information Center

    Baker, Betty Ruth

    Playing with blocks can facilitate the creative, social, emotional, physical, and cognitive development of young children. This article presents information and activities concerning block play and its role in young children's experience. Topics covered include: (1) types of blocks; (2) selection of blocks and accessories; (3) planning of the…

  19. High χ block copolymers based on chemical modification of poly(t-butyl acrylate) containing block copolymers

    NASA Astrophysics Data System (ADS)

    Park, Sungmin; Jo, Seongjun; Lee, Yonghoon; Ryu, Chang Y.; Ryu, Du Yeol; Chun, Jun Sung

    2016-03-01

    We report the synthesis and characterization of novel block copolymer (BCP) materials for the directed self-assembly (DSA) nanolithography applications. Specifically, the poly(t-butyl acrylate) (PtBA) block in the styrenic block copolymers have been chemically modified to a fluorinated block for the enhancement of the BCP χ-parameters. dPSb- PtBA had been first synthesized by anionic polymerization to prepare a well-defined BCP precursor with narrow polydispersity for the fluorination of PtBA block. Then, the precursor BCP was chemically modified by transalcoholysis of the PtBA-block with 2,2,2-trifluoroethanol. This strategy offers the advantage of flexibility and controllability to tailor the χ-parameter, while maintaining the narrow molecular weight distribution of the BCP materials for the advanced lithography applications. The transmission electron microscopy/small angle x-ray scattering (TEM/SAXS) characterization results of the modified BCP consisting of poly(fluoroalkylate) and PS supported the development of highly ordered lamellar domains in bulk.

  20. Building Blocks for Personal Brands

    ERIC Educational Resources Information Center

    Thomas, Lisa Carlucci

    2011-01-01

    In this article, the author discusses the four essential building blocks for personal brands: (1) name; (2) message; (3) channels; and (4) bridges. However, outstanding building materials can only take a person so far. The author emphasizes that vision, determination, faith, a sense of humor, and humility are also required.

  1. Sinoatrial block complicating legionnaire's disease.

    PubMed

    Medarov, B; Tongia, S; Rossoff, L

    2003-11-01

    A 59 year old woman presented with acute onset of fever, chills, diaphoresis, vague chest discomfort, and was found to be hypotensive and tachypnoeic. An electrocardiogram demonstrated sinoatrial block with a junctional rhythm between 50 and 80 beats/min. All cultures were negative and imaging studies unrevealing. Her urine tested positive for Legionella pneumophila antigen serotype 1 and she improved with antibiotic therapy.

  2. The Federal Block Grant Experience.

    ERIC Educational Resources Information Center

    Levy, Seymour; Linster, Charles A.

    Block grants have been defined as programs through which funds are provided to governmental units, such as state or local governments, based upon a statutory formula. They are usually provided for use in a defined, but broad, area and at the recipient's discretion. This document describes the historical development of these grants and the role of…

  3. Preschoolers' Thinking during Block Play

    ERIC Educational Resources Information Center

    Piccolo, Diana L.; Test, Joan

    2010-01-01

    Children build foundations for mathematical thinking in early play and exploration. During the preschool years, children enjoy exploring mathematical concepts--such as patterns, shape, spatial relationships, and measurement--leading them to spontaneously engage in mathematical thinking during play. Block play is one common example that engages…

  4. Block Scheduling: Three Years Later.

    ERIC Educational Resources Information Center

    Corley, Edward L.

    This is a followup study of teacher perceptions regarding block scheduling. The original study was done in 1996 at a small city high school in a predominantly rural county in Ohio. At that time, lack of communication was found to be the central theme in the resistance that emerged. This paper is based on data from written responses to open-ended…

  5. Attraction by Repulsion: Pairing Electrons using Electrons

    NASA Astrophysics Data System (ADS)

    Ilani, Shahal

    One of the fundamental properties of electrons is their mutual Columbic repulsion. If electrons are placed in a solid, however, this basic property may change. A famous example is that of superconductors, where coupling to lattice vibrations makes electrons attractive and leads to the formation of bound pairs. But what if all the degrees of freedom in the solid are electronic? Is it possible to make electrons attract each other only by their repulsion to other electrons? Such an `excitonic' mechanism for attraction was proposed fifty years ago by W. A. Little, with the hope that it could lead to better and more exotic superconductivity. Yet, despite many efforts to synthesize materials that possess this unique property, to date there is still no evidence for electronic-based attraction. In this talk I will present our recent experiments that observe this unusual electronic attraction using a different, bottom-up approach. Our experiments are based on a new generation of quantum devices made from pristine carbon nanotubes, combined with precision cryogenic manipulation. Using this setup we can now assemble the fundamental building block of the excitonic attraction and demonstrate that two electrons that naturally repel each other can be made attractive using an independent electronic system as the binding glue. I will discuss the lessons learned from these experiments on what is achievable with plain electrostatics, and on the possibility to use the observed mechanism for creating exotic states of matter.

  6. Synthesis and morphology characterization of polydimethylsiloxane-containing block copolymers

    NASA Astrophysics Data System (ADS)

    Wadley, Maurice

    The thin film morphology characteristics of polydimethylsiloxane-containing block copolymers have been investigated. For this investigation, a commercially available hydroxyl terminated PDMS was purchased from Gelest and attached to a carboxylic acid functional reversible addition-fragmentation chain transfer (RAFT) agent by Steglich esterification. This produced macro-RAFT agents to which styrene monomer was polymerized. By using this approach the generation of low polydispersity polystyrene-block-polydimethylsiloxane (PS-block-PDMS) copolymers of various molecular weights spanning a wide volume fraction range in which the PDMS block remained the same in each polymerization. Synthesized block copolymers were characterized by gel permeation chromatography (GPC) and nuclear magnetic resonance (NMR) spectroscopy. Bulk and thin film characterization of PS-block-PDMS copolymers was done by small-angle x-ray scattering (SAXS), transmission electron microscopy (TEM), contact angle measurements, scanning force microscopy (SFM), and grazing incidence small-angle X-ray scattering (GISAXS). The following observations have been made. For PS-rich PS-block -PDMS copolymer thin films the low surface tension of PDMS caused it to migrate to the film surface regardless of solvent choice. The surface morphology was found to depend strongly on the solubility parameter of the solvent and exhibited SFM images consistent with parallel cylinder, perforated lamellar, and lamellar surface layers with increasing solvent solubility parameter. This behavior was due to the selective swelling of the individual blocks under slightly selective, good solvent conditions. A custom solvent annealing apparatus provided similar results in which order-order transitions in the thin films were observed with increasing solvent solubility parameter. Additionally improvements in the long-range order were observed after 1 h of solvent annealing. PS-rich PS-block-PDMS copolymer thin films also displayed PDMS

  7. Block QCA Fault-Tolerant Logic Gates

    NASA Technical Reports Server (NTRS)

    Firjany, Amir; Toomarian, Nikzad; Modarres, Katayoon

    2003-01-01

    Suitably patterned arrays (blocks) of quantum-dot cellular automata (QCA) have been proposed as fault-tolerant universal logic gates. These block QCA gates could be used to realize the potential of QCA for further miniaturization, reduction of power consumption, increase in switching speed, and increased degree of integration of very-large-scale integrated (VLSI) electronic circuits. The limitations of conventional VLSI circuitry, the basic principle of operation of QCA, and the potential advantages of QCA-based VLSI circuitry were described in several NASA Tech Briefs articles, namely Implementing Permutation Matrices by Use of Quantum Dots (NPO-20801), Vol. 25, No. 10 (October 2001), page 42; Compact Interconnection Networks Based on Quantum Dots (NPO-20855) Vol. 27, No. 1 (January 2003), page 32; Bit-Serial Adder Based on Quantum Dots (NPO-20869), Vol. 27, No. 1 (January 2003), page 35; and Hybrid VLSI/QCA Architecture for Computing FFTs (NPO-20923), which follows this article. To recapitulate the principle of operation (greatly oversimplified because of the limitation on space available for this article): A quantum-dot cellular automata contains four quantum dots positioned at or between the corners of a square cell. The cell contains two extra mobile electrons that can tunnel (in the quantummechanical sense) between neighboring dots within the cell. The Coulomb repulsion between the two electrons tends to make them occupy antipodal dots in the cell. For an isolated cell, there are two energetically equivalent arrangements (denoted polarization states) of the extra electrons. The cell polarization is used to encode binary information. Because the polarization of a nonisolated cell depends on Coulomb-repulsion interactions with neighboring cells, universal logic gates and binary wires could be constructed, in principle, by arraying QCA of suitable design in suitable patterns. Heretofore, researchers have recognized two major obstacles to realization of QCA

  8. Characterization of Lithium Polysulfide Salts in Homopolymers and Block Copolymers

    NASA Astrophysics Data System (ADS)

    Wang, Dunyang; Wujcik, Kevin; Balsara, Nitash

    Ion-conducting polymers are important for solid-state batteries due to the promise of better safety and the potential to produce higher energy density batteries. Nanostructured block copolymer electrolytes can provide high ionic conductivity and mechanical strength through microphase separation. One of the potential use of block copolymer electrolytes is in lithium-sulfur batteries, a system that has high theoretical energy density wherein the reduction of sulfur leads to the formation of lithium polysulfide intermediates. In this study we investigate the effect of block copolymer morphology on the speciation and transport properties of the polysulfides. The morphology and conductivities of polystyrene-b-poly(ethylene oxide) (SEO) containing lithium polysulfides were studies using small-angle X-ray scattering and ac impedance spectroscopy. UV-vis spectroscopy is being used to determine nature of the polysulfide species in poly(ethylene oxide) and SEO. Department of Energy, Soft Matter Electron Microscopy Program and Battery Materials Research Program.

  9. Belos Block Linear Solvers Package

    2004-03-01

    Belos is an extensible and interoperable framework for large-scale, iterative methods for solving systems of linear equations with multiple right-hand sides. The motivation for this framework is to provide a generic interface to a collection of algorithms for solving large-scale linear systems. Belos is interoperable because both the matrix and vectors are considered to be opaque objects--only knowledge of the matrix and vectors via elementary operations is necessary. An implementation of Balos is accomplished viamore » the use of interfaces. One of the goals of Belos is to allow the user flexibility in specifying the data representation for the matrix and vectors and so leverage any existing software investment. The algorithms that will be included in package are Krylov-based linear solvers, like Block GMRES (Generalized Minimal RESidual) and Block CG (Conjugate-Gradient).« less

  10. Dissolution patterns on caramel blocks

    NASA Astrophysics Data System (ADS)

    Cohen, Caroline; Derr, Julien; Berhanu, Michael; Courrech Du Pont, Sylvain

    2015-11-01

    We investigate erosion by dissolution processes. We perform laboratory experiments on hard caramel bodies, which dissolve on a short timescale, compared to geological material such as limestone. We put a block of caramel, tilted from the horizontal, in a water tank without flow. The dissolution syrup, which is denser than pure water, sinks and the flow detaching from the surface creates patterns underneath the caramel block. These patterns result from the coupled dynamics of the flow detaching and the eroding surface and are reminiscent of scallops observed in the walls of phreatic cave passages. We investigate the mechanisms of formation of these structures and their evolution depending on several parameters such as the fluid density or the flow velocity. We finally parallel the formation of patterns on melting iceberg.

  11. Gauge Blocks - A Zombie Technology.

    PubMed

    Doiron, Ted

    2008-01-01

    Gauge blocks have been the primary method for disseminating length traceability for over 100 years. Their longevity was based on two things: the relatively low cost of delivering very high accuracy to users, and the technical limitation that the range of high precision gauging systems was very small. While the first reason is still true, the second factor is being displaced by changes in measurement technology since the 1980s. New long range sensors do not require master gauges that are nearly the same length as the part being inspected, and thus one of the primary attributes of gauge blocks, wringing stacks to match the part, is no longer needed. Relaxing the requirement that gauges wring presents an opportunity to develop new types of end standards that would increase the accuracy and usefulness of gauging systems. PMID:27096119

  12. Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth

    SciTech Connect

    Dasgupta, Sansaptak; Nidhi,; Brown, David F.; Wu, Feng; Keller, Stacia; Speck, James S.; Mishra, Umesh K.

    2010-04-05

    Ultralow Ohmic contact resistance and a self-aligned device structure are necessary to reduce the effect of parasitic elements and obtain higher f{sub t} and f{sub max} in high electron mobility transistors (HEMTs). N-polar (0001) GaN HEMTs, offer a natural advantage over Ga-polar HEMTs, in terms of contact resistance since the contact is not made through a high band gap material [Al(Ga)N]. In this work, we extend the advantage by making use of polarization induced three-dimensional electron-gas through regrowth of graded InGaN and thin InN cap in the contact regions by plasma (molecular beam epitaxy), to obtain an ultralow Ohmic contact resistance of 27 OMEGA mum to a GaN 2DEG.

  13. Electron mobility limited by surface and interface roughness scattering in AlxGa1-xN/GaN quantum wells

    NASA Astrophysics Data System (ADS)

    Wang, Jian-Xia; Yang, Shao-Yan; Wang, Jun; Liu, Gui-Peng; Li, Zhi-Wei; Li, Hui-Jie; Jin, Dong-Dong; Liu, Xiang-Lin; Zhu, Qin-Sheng; Wang, Zhan-Guo

    2013-07-01

    The electron mobility limited by the interface and surface roughness scatterings of the two-dimensional electron gas in AlxGa1-xN/GaN quantum wells is studied. The newly proposed surface roughness scattering in the AlGaN/GaN quantum wells becomes effective when an electric field exists in the AlxGa1-xN barrier. For the AlGaN/GaN potential well, the ground subband energy is governed by the spontaneous and the piezoelectric polarization fields which are determined by the barrier and the well thicknesses. The thickness fluctuation of the AlGaN barrier and the GaN well due to the roughnesses cause the local fluctuation of the ground subband energy, which will reduce the 2DEG mobility.

  14. Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

    NASA Astrophysics Data System (ADS)

    Tapajna, M.; Hilt, O.; Bahat-Treidel, E.; Würfl, J.; Kuzmík, J.

    2015-11-01

    Gate diode conduction mechanisms were analyzed in normally-off p-GaN/AlGaN/GaN high-electron mobility transistors grown on Si wafers before and after forward bias stresses. Electrical characterization of the gate diodes indicates forward current to be limited by channel electrons injected through the AlGaN/p-GaN triangular barrier promoted by traps. On the other hand, reverse current was found to be consistent with carrier generation-recombination processes in the AlGaN layer. Soft breakdown observed after ˜105 s during forward bias stress at gate voltage of 7 V was attributed to formation of conductive channel in p-GaN/AlGaN gate stack via trap generation and percolation mechanism, likely due to coexistence of high electric field and high forward current density. Possible enhancement of localized conductive channels originating from spatial inhomogeneities is proposed to be responsible for the degradation.

  15. Multi-level block permutation

    PubMed Central

    Winkler, Anderson M.; Webster, Matthew A.; Vidaurre, Diego; Nichols, Thomas E.; Smith, Stephen M.

    2015-01-01

    Under weak and reasonable assumptions, mainly that data are exchangeable under the null hypothesis, permutation tests can provide exact control of false positives and allow the use of various non-standard statistics. There are, however, various common examples in which global exchangeability can be violated, including paired tests, tests that involve repeated measurements, tests in which subjects are relatives (members of pedigrees) — any dataset with known dependence among observations. In these cases, some permutations, if performed, would create data that would not possess the original dependence structure, and thus, should not be used to construct the reference (null) distribution. To allow permutation inference in such cases, we test the null hypothesis using only a subset of all otherwise possible permutations, i.e., using only the rearrangements of the data that respect exchangeability, thus retaining the original joint distribution unaltered. In a previous study, we defined exchangeability for blocks of data, as opposed to each datum individually, then allowing permutations to happen within block, or the blocks as a whole to be permuted. Here we extend that notion to allow blocks to be nested, in a hierarchical, multi-level definition. We do not explicitly model the degree of dependence between observations, only the lack of independence; the dependence is implicitly accounted for by the hierarchy and by the permutation scheme. The strategy is compatible with heteroscedasticity and variance groups, and can be used with permutations, sign flippings, or both combined. We evaluate the method for various dependence structures, apply it to real data from the Human Connectome Project (HCP) as an example application, show that false positives can be avoided in such cases, and provide a software implementation of the proposed approach. PMID:26074200

  16. Uav Photogrammetry: Block Triangulation Comparisons

    NASA Astrophysics Data System (ADS)

    Gini, R.; Pagliari, D.; Passoni, D.; Pinto, L.; Sona, G.; Dosso, P.

    2013-08-01

    UAVs systems represent a flexible technology able to collect a big amount of high resolution information, both for metric and interpretation uses. In the frame of experimental tests carried out at Dept. ICA of Politecnico di Milano to validate vector-sensor systems and to assess metric accuracies of images acquired by UAVs, a block of photos taken by a fixed wing system is triangulated with several software. The test field is a rural area included in an Italian Park ("Parco Adda Nord"), useful to study flight and imagery performances on buildings, roads, cultivated and uncultivated vegetation. The UAV SenseFly, equipped with a camera Canon Ixus 220HS, flew autonomously over the area at a height of 130 m yielding a block of 49 images divided in 5 strips. Sixteen pre-signalized Ground Control Points, surveyed in the area through GPS (NRTK survey), allowed the referencing of the block and accuracy analyses. Approximate values for exterior orientation parameters (positions and attitudes) were recorded by the flight control system. The block was processed with several software: Erdas-LPS, EyeDEA (Univ. of Parma), Agisoft Photoscan, Pix4UAV, in assisted or automatic way. Results comparisons are given in terms of differences among digital surface models, differences in orientation parameters and accuracies, when available. Moreover, image and ground point coordinates obtained by the various software were independently used as initial values in a comparative adjustment made by scientific in-house software, which can apply constraints to evaluate the effectiveness of different methods of point extraction and accuracies on ground check points.

  17. Compact planar microwave blocking filters

    NASA Technical Reports Server (NTRS)

    U-Yen, Kongpop (Inventor); Wollack, Edward J. (Inventor)

    2012-01-01

    A compact planar microwave blocking filter includes a dielectric substrate and a plurality of filter unit elements disposed on the substrate. The filter unit elements are interconnected in a symmetrical series cascade with filter unit elements being organized in the series based on physical size. In the filter, a first filter unit element of the plurality of filter unit elements includes a low impedance open-ended line configured to reduce the shunt capacitance of the filter.

  18. Nanoparticles: scaffolds and building blocks.

    PubMed

    Shenhar, Roy; Rotello, Vincent M

    2003-07-01

    Nanoparticles provide key tools for bridging the gap between "bottom-up" synthetic methods and "top-down" fabrication. In this Account we describe some of the unique structural aspects of nanoparticles and the use of these attributes to the creation of devices with tunable specificity and environmental response. We also explore the use of nanoparticles as "building blocks" for the creation of nanocomposite materials that feature structural control from the molecular to the micron scale.

  19. An AlN/Al0.85Ga0.15N high electron mobility transistor

    DOE PAGES

    Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.; Douglas, Erica A.; Sanchez, Carlos A.; King, Michael P.; Coltrin, Michael E.; Fortune, Torben R.; Kaplar, Robert J.

    2016-07-22

    An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al0.85Ga0.15N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap for AlGaN channel HEMTs. An etch and regrowth procedure was implemented for source and drain contact formation. A breakdown voltage of 810 V was achieved without a gate insulator or field plate. Excellent gate leakage characteristics enabled a high Ion/Ioff current ratio greater than 107 and an excellent subthreshold slope of 75 mV/decade. A large Schottky barrier height of 1.74 eV contributed to these results. In conclusion, the room temperature voltage-dependent 3-terminalmore » off-state drain current was adequately modeled with Frenkel-Poole emission.« less

  20. Electrical detection of kidney injury molecule-1 with AlGaN/GaN high electron mobility transistors

    SciTech Connect

    Wang, H. T.; Kang, B. S.; Ren, F.; Pearton, S. J.; Johnson, J. W.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.

    2007-11-26

    AlGaN/GaN high electron mobility transistors (HEMTs) were used to detect kidney injury molecule-1 (KIM-1), an important biomarker for early kidney injury detection. The gate region consisted of 5 nm gold deposited onto the AlGaN surface. The gold was conjugated to highly specific KIM-1 antibodies through a self-assembled monolayer of thioglycolic acid. The HEMT source-drain current showed a clear dependence on the KIM-1 concentration in phosphate-buffered saline solution. The limit of detection was 1 ng/ml using a 20x50 {mu}m{sup 2} gate sensing area. This approach shows potential for both preclinical and clinical kidney injury diagnosis with accurate, rapid, noninvasive, and high throughput capabilities.

  1. An AlN/Al0.85Ga0.15N high electron mobility transistor

    NASA Astrophysics Data System (ADS)

    Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.; Douglas, Erica A.; Sanchez, Carlos A.; King, Michael P.; Coltrin, Michael E.; Fortune, Torben R.; Kaplar, Robert J.

    2016-07-01

    An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al0.85Ga0.15N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap for AlGaN channel HEMTs. An etch and regrowth procedure was implemented for source and drain contact formation. A breakdown voltage of 810 V was achieved without a gate insulator or field plate. Excellent gate leakage characteristics enabled a high Ion/Ioff current ratio greater than 107 and an excellent subthreshold slope of 75 mV/decade. A large Schottky barrier height of 1.74 eV contributed to these results. The room temperature voltage-dependent 3-terminal off-state drain current was adequately modeled with Frenkel-Poole emission.

  2. [Thromboembolic prophylaxis and central blocks].

    PubMed

    Vincenti, E

    2001-09-01

    Epidural and spinal blocks are widely used in several surgical settings in order to obtain analgesic advantages and reduce blood loss and thromboembolic complications. However, many high risk patients receive perioperatively some anti-coagulant treatments for preventing venous thrombosis and pulmonary embolism. Although a number of large observations has demonstrated a very low rate of major neurological impairment due to spinal haematomas, in the last years an increasing number of case reports seems to cause an excessive anxiety to the anaesthesiologists. On the other hand, spinal haematomas occurred in same cases without anti-coagulant therapy. An other question concerns the onset time from an epidural/spinal puncture and the development of neurological symptoms of spinal compression, which may appear even after days or weeks. Female gender, aged patients, vascular surgery, uncontrolled positions on the table, number of spinal punctures, large gauge of needle and low degree of skill are the main factors involving in the haemorrhagic phenomena around spinal cord. Accurate anamnesis, no anti-coagulant medication before surgery, and a perfect technique of managing spinal/epidural block are essential elements for reducing probability of severe bleeding and consequent expansive haematomas. Also, informed consent of patients and careful judgement of advantages vs risks of a central block for every high risk case determine the final decision about the regional anaesthesia: to do or not to do.

  3. Design of block copolymer templated solid state batteries

    NASA Astrophysics Data System (ADS)

    Bullock, Steven Edward

    The advent of portable electronics has placed a great demand on the power requirements of battery systems. High power batteries for small devices, such as cell phones, laptop computers, and personal data assistants (PDA's) have focused primarily on lithium ion batteries. With the introduction of large flexible panel displays, the need for a flexible battery system is apparent. Ring Opening Metathesis Polymerization (ROMP) is a facile method for synthesizing block copolymers with polar functional groups. These functional groups allow the formation of metal oxide clusters via a template of the microphase separated block copolymer domains. In this thesis, the synthesis of a flexible polymer battery system is described. Diblock copolymers of an ionically conductive unsaturated polyethylene oxide block with a carboxylic acid functionalized block were synthesized and characterized with NMR, IR and Gel Permeation Chromatography (GPC). Characterization of polymer templated LiMn2O 4 clusters and nanocomposites synthesized for the study have a distributed cluster morphology within the polymer matrix. The nanocomposites were analyzed with transmission electron microscopy to determine the morphology of the nanocomposites. Battery performance was characterized with cyclic voltammetry and galvanostatic charge/discharge cycling for power capacity. The ionic conductivity was measured with impedance spectroscopy. The novel room temperature templating strategy used for the synthesis of these ionically conductive nanocomposites requires no thermal cycling steps. This makes it attractive for processing of sheet structures to power flexible displays.

  4. Pyrimidine dimers block simian virus 40 replication forks

    SciTech Connect

    Berger, C.A.; Edenberg, H.J.

    1986-10-01

    UV light produces lesions, predominantly pyrimidine dimers, which inhibit DNA replication in mammalian cells. The mechanism of inhibition is controversial: is synthesis of a daughter strand halted at a lesion while the replication fork moves on and reinitiates downstream, or is fork progression itself blocked for some time at the site of a lesion. We directly addressed this question by using electron microscopy to examine the distances of replication forks from the origin in unirradiated and UV-irradiated simian virus 40 chromosomes. If UV lesions block replication fork progression, the forks should be asymmetrically located in a large fraction of the irradiated molecules; if replication forks move rapidly past lesions, the forks should be symmetrically located. A large fraction of the simian virus 40 replication forks in irradiated molecules were asymmetrically located, demonstrating that UV lesions present at the frequency of pyrimidine dimers block replication forks. As a mechanism for this fork blockage, we propose that polymerization of the leading strand makes a significant contribution to the energetics of fork movement, so any lesion in the template for the leading strand which blocks polymerization should also block fork movement.

  5. Manipulating Ordering Transitions in Interfacially Modified Block Copolymers

    SciTech Connect

    Singh, N.; Tureau, M; Epps, T

    2009-01-01

    We report a synthetic strategy that allows us to manipulate the interfacial region between blocks and control ordering transitions in poly(isoprene-b-styrene) [P(I-S)] block copolymers. This interfacial modification is accomplished by combining a semi-batch feed with anionic polymerization techniques. Using this approach, we are able to control the segmental composition and molecular interactions in our phase-separated block copolymers, independent of molecular weight and block constituents. A library of copolymers is prepared with various interfacial modifications to examine the effect of interfacial composition on copolymer self-assembly. The morphological characteristics of the self-assembled structures are investigated using small-angle X-ray scattering (SAXS), transmission electron microscopy (TEM), and dynamic mechanical analysis (DMA). Normal and inverse tapered block copolymers, containing approximately 15-35 vol% tapered material, show a measurable decrease in the order-disorder transition temperature (TODT) relative to the corresponding non-tapered diblock copolymers, with the inverse tapered materials showing the greatest deviation in TODT. Additionally, TODT was inversely related to the volume fraction of the tapered region in both normal and inverse tapered copolymer materials.

  6. Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

    SciTech Connect

    Naresh-Kumar, G. Trager-Cowan, C.; Vilalta-Clemente, A.; Morales, M.; Ruterana, P.; Pandey, S.; Cavallini, A.; Cavalcoli, D.; Skuridina, D.; Vogt, P.; Kneissl, M.; Behmenburg, H.; Giesen, C.; Heuken, M.; Gamarra, P.; Di Forte-Poisson, M. A.; Patriarche, G.; Vickridge, I.

    2014-12-15

    We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(Ga)N(33nm barrier)/Al(Ga)N(1nm interlayer)/GaN(3μm)/ AlN(100nm)/Al{sub 2}O{sub 3} high electron mobility transistor (HEMT) heterostructure grown by metal organic vapor phase epitaxy (MOVPE). In particular we reveal and discuss the role of unintentional Ga incorporation in the barrier and also in the interlayer. The observation of unintentional Ga incorporation by using energy dispersive X–ray spectroscopy analysis in a scanning transmission electron microscope is supported with results obtained for samples with a range of AlN interlayer thicknesses grown under both the showerhead as well as the horizontal type MOVPE reactors. Poisson–Schrödinger simulations show that for high Ga incorporation in the Al(Ga)N interlayer, an additional triangular well with very small depth may be exhibited in parallel to the main 2–DEG channel. The presence of this additional channel may cause parasitic conduction and severe issues in device characteristics and processing. Producing a HEMT structure with InAlGaN as the barrier and AlGaN as the interlayer with appropriate alloy composition may be a possible route to optimization, as it might be difficult to avoid Ga incorporation while continuously depositing the layers using the MOVPE growth method. Our present work shows the necessity of a multicharacterization approach to correlate structural and electrical properties to understand device structures and their performance.

  7. The effect of the amount of blocking cue training on blocking of appetitive conditioning in mice.

    PubMed

    Sanderson, David J; Jones, William S; Austen, Joseph M

    2016-01-01

    Conditioning of a target cue is blocked when it occurs in compound with another cue (blocking cue) that has already received conditioning. Although blocking of appetitive conditioning is commonly used in rodents as a test of selective learning, it has been demonstrated rarely in mice. In order to investigate the conditions that result in blocking in mice two studies tested the effect of the extent of prior blocking cue training on blocking of appetitive conditioning. Mice received either 80 or 200 trials of blocking cue training prior to compound conditioning. A control group received only compound training. Experiment 1 assessed the ability of a visual cue to block conditioning to an auditory target cue. Exposure to the context and the unconditioned stimulus, sucrose pellets, was equated across groups. Blocking was evident in mice that received 200, but not 80 training trials with the visual blocking cue. Responding to the blocking cue was similar across groups. Experiment 2 assessed the ability of an auditory cue to block conditioning to a visual target cue. Blocking was evident in mice trained with 80 and 200 auditory blocking cue trials. The results demonstrate that the strength of blocking in mice is dependent on the modality and experience of the blocking cue. Furthermore, prolonged training of the blocking cue after asymptotic levels of conditioned responding have been reached is necessary for blocking to occur under certain conditions suggesting that the strength of conditioned responding is a limited measure of learning.

  8. Hillslope-derived blocks retard river incision

    NASA Astrophysics Data System (ADS)

    Shobe, Charles M.; Tucker, Gregory E.; Anderson, Robert S.

    2016-05-01

    The most common detachment-limited river incision models ignore the effects of sediment on fluvial erosion, yet steep reaches of mountain rivers often host clusters of large (>1 m) blocks. We argue that this distribution of blocks is a manifestation of an autogenic negative feedback in which fast vertical river incision steepens adjacent hillslopes, which deliver blocks to the channel. Blocks inhibit incision by shielding the bed and enhancing form drag. We explore this feedback with a 1-D channel-reach model in which block delivery by hillslopes depends on the river incision rate. Results indicate that incision-dependent block delivery can explain the block distribution in Boulder Creek, Colorado. The proposed negative feedback may significantly slow knickpoint retreat, channel adjustment, and landscape response compared to rates predicted by current theory. The influence of hillslope-derived blocks may complicate efforts to extract base level histories from river profiles.

  9. Workflow in interventional radiology: nerve blocks and facet blocks

    NASA Astrophysics Data System (ADS)

    Siddoway, Donald; Ingeholm, Mary Lou; Burgert, Oliver; Neumuth, Thomas; Watson, Vance; Cleary, Kevin

    2006-03-01

    Workflow analysis has the potential to dramatically improve the efficiency and clinical outcomes of medical procedures. In this study, we recorded the workflow for nerve block and facet block procedures in the interventional radiology suite at Georgetown University Hospital in Washington, DC, USA. We employed a custom client/server software architecture developed by the Innovation Center for Computer Assisted Surgery (ICCAS) at the University of Leipzig, Germany. This software runs in an internet browser, and allows the user to record the actions taken by the physician during a procedure. The data recorded during the procedure is stored as an XML document, which can then be further processed. We have successfully gathered data on a number if cases using a tablet PC, and these preliminary results show the feasibility of using this software in an interventional radiology setting. We are currently accruing additional cases and when more data has been collected we will analyze the workflow of these procedures to look for inefficiencies and potential improvements.

  10. Method for making block siloxane copolymers

    DOEpatents

    Butler, N.L.; Jessop, E.S.; Kolb, J.R.

    1981-02-25

    A method for synthesizing block polysiloxane copolymers is disclosed. Diorganoscyclosiloxanes and an end-blocking compound are interacted in the presence of a ring opening polymerization catalyst, producing a blocked prepolymer. The prepolymer is then interacted with a silanediol, resulting in condensation polymerization of the prepolymers. A second end-blocking compound is subsequently introduced to end-cap the polymers and copolymers formed from the condensation polymerization.

  11. Method for making block siloxane copolymers

    DOEpatents

    Butler, Nora; Jessop, Edward S.; Kolb, John R.

    1982-01-01

    A method for synthesizing block polysiloxane copolymers. Diorganoscyclosiloxanes and an end-blocking compound are interacted in the presence of a ring opening polymerization catalyst, producing a blocked prepolymer. The prepolymer is then interacted with a silanediol, resulting in condensation polymerization of the prepolymers. A second end-blocking compound is subsequently introduced to end-cap the polymers and copolymers formed from the condensation polymerization.

  12. Pattern transfer using block copolymers.

    PubMed

    Gu, Xiaodan; Gunkel, Ilja; Russell, Thomas P

    2013-10-13

    To meet the increasing demand for patterning smaller feature sizes, a lithography technique is required with the ability to pattern sub-20 nm features. While top-down photolithography is approaching its limit in the continued drive to meet Moore's law, the use of directed self-assembly (DSA) of block copolymers (BCPs) offers a promising route to meet this challenge in achieving nanometre feature sizes. Recent developments in BCP lithography and in the DSA of BCPs are reviewed. While tremendous advances have been made in this field, there are still hurdles that need to be overcome to realize the full potential of BCPs and their actual use.

  13. Large block test status report

    SciTech Connect

    Wilder, D.G.; Lin, W.; Blair, S.C.

    1997-08-26

    This report is intended to serve as a status report, which essentially transmits the data that have been collected to date on the Large Block Test (LBT). The analyses of data will be performed during FY98, and then a complete report will be prepared. This status report includes introductory material that is not needed merely to transmit data but is available at this time and therefore included. As such, this status report will serve as the template for the future report, and the information is thus preserved.

  14. Bullet-Block Science Video Puzzle

    ERIC Educational Resources Information Center

    Shakur, Asif

    2015-01-01

    A science video blog, which has gone viral, shows a wooden block shot by a vertically aimed rifle. The video shows that the block hit dead center goes exactly as high as the one shot off-center. (Fig. 1). The puzzle is that the block shot off-center carries rotational kinetic energy in addition to the gravitational potential energy. This leads a…

  15. Block Play: Practical Suggestions for Common Dilemmas

    ERIC Educational Resources Information Center

    Tunks, Karyn Wellhousen

    2009-01-01

    Learning materials and teaching methods used in early childhood classrooms have fluctuated greatly over the past century. However, one learning tool has stood the test of time: Wood building blocks, often called unit blocks, continue to be a source of pleasure and learning for young children at play. Wood blocks have the unique capacity to engage…

  16. Imide/arylene ether block copolymers

    NASA Technical Reports Server (NTRS)

    Jensen, B. J.; Hergenrother, P. M.; Bass, R. G.

    1991-01-01

    Two series of imide/arylene either block copolymers were prepared using an arylene ether block and either an amorphous or semi-crystalline imide block. The resulting copolymers were characterized and selected physical and mechanical properties were determined. These results, as well as comparisons to the homopolymer properties, are discussed.

  17. Writer's block in a Chinese sample.

    PubMed

    Lee, Sy-Ying; Krashen, Stephen

    2003-10-01

    To assess whether writer's block occurs in languages other than English, a Chinese language translation of Rose's Writer's Block questionnaire was administered to 98 university students in Taiwan. Analysis suggests that writer's block occurs for Chinese students, and, as in English, it is related to premature editing and to a lack of strategies for dealing with complex writing tasks.

  18. 31 CFR 515.319 - Blocked account.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 31 Money and Finance: Treasury 3 2010-07-01 2010-07-01 false Blocked account. 515.319 Section 515... § 515.319 Blocked account. The term blocked account shall mean an account in which any designated national has an interest, with respect to which account payments, transfers or withdrawals or...

  19. 31 CFR 515.319 - Blocked account.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 31 Money and Finance:Treasury 3 2014-07-01 2014-07-01 false Blocked account. 515.319 Section 515... § 515.319 Blocked account. The term blocked account shall mean an account in which any designated national has an interest, with respect to which account payments, transfers or withdrawals or...

  20. 31 CFR 515.319 - Blocked account.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 31 Money and Finance:Treasury 3 2013-07-01 2013-07-01 false Blocked account. 515.319 Section 515... § 515.319 Blocked account. The term blocked account shall mean an account in which any designated national has an interest, with respect to which account payments, transfers or withdrawals or...

  1. 31 CFR 515.319 - Blocked account.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 31 Money and Finance:Treasury 3 2011-07-01 2011-07-01 false Blocked account. 515.319 Section 515... § 515.319 Blocked account. The term blocked account shall mean an account in which any designated national has an interest, with respect to which account payments, transfers or withdrawals or...

  2. 31 CFR 515.319 - Blocked account.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 31 Money and Finance:Treasury 3 2012-07-01 2012-07-01 false Blocked account. 515.319 Section 515... § 515.319 Blocked account. The term blocked account shall mean an account in which any designated national has an interest, with respect to which account payments, transfers or withdrawals or...

  3. 31 CFR 500.319 - Blocked account.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 31 Money and Finance: Treasury 3 2010-07-01 2010-07-01 false Blocked account. 500.319 Section 500... § 500.319 Blocked account. The term blocked account shall mean an account in which any designated national has an interest, with respect to which account payments, transfers or withdrawals of...

  4. Encoders for block-circulant LDPC codes

    NASA Technical Reports Server (NTRS)

    Divsalar, Dariush (Inventor); Abbasfar, Aliazam (Inventor); Jones, Christopher R. (Inventor); Dolinar, Samuel J. (Inventor); Thorpe, Jeremy C. (Inventor); Andrews, Kenneth S. (Inventor); Yao, Kung (Inventor)

    2009-01-01

    Methods and apparatus to encode message input symbols in accordance with an accumulate-repeat-accumulate code with repetition three or four are disclosed. Block circulant matrices are used. A first method and apparatus make use of the block-circulant structure of the parity check matrix. A second method and apparatus use block-circulant generator matrices.

  5. Blockbusters: Ideas for the Block Center.

    ERIC Educational Resources Information Center

    Adams, Polly K.; Nesmith, Jaynie

    1996-01-01

    Goals of block building in early childhood classrooms focus on physical, social, cognitive, and emotional development. Reports survey results of the value teachers place on block play. Offers illustrations of task cards to use with blocks in math, language arts, social studies, and science. Discusses guidelines and suggests idea cards and sentence…

  6. Naming Block Structures: A Multimodal Approach

    ERIC Educational Resources Information Center

    Cohen, Lynn; Uhry, Joanna

    2011-01-01

    This study describes symbolic representation in block play in a culturally diverse suburban preschool classroom. Block play is "multimodal" and can allow children to experiment with materials to represent the world in many forms of literacy. Combined qualitative and quantitative data from seventy-seven block structures were collected and analyzed.…

  7. 43 CFR 8.4 - Blocking out.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 43 Public Lands: Interior 1 2012-10-01 2011-10-01 true Blocking out. 8.4 Section 8.4 Public Lands: Interior Office of the Secretary of the Interior JOINT POLICIES OF THE DEPARTMENTS OF THE INTERIOR AND OF THE ARMY RELATIVE TO RESERVOIR PROJECT LANDS § 8.4 Blocking out. Blocking out will be accomplished...

  8. 43 CFR 8.4 - Blocking out.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 43 Public Lands: Interior 1 2014-10-01 2014-10-01 false Blocking out. 8.4 Section 8.4 Public Lands: Interior Office of the Secretary of the Interior JOINT POLICIES OF THE DEPARTMENTS OF THE INTERIOR AND OF THE ARMY RELATIVE TO RESERVOIR PROJECT LANDS § 8.4 Blocking out. Blocking out will be accomplished...

  9. 43 CFR 8.4 - Blocking out.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 43 Public Lands: Interior 1 2011-10-01 2011-10-01 false Blocking out. 8.4 Section 8.4 Public Lands: Interior Office of the Secretary of the Interior JOINT POLICIES OF THE DEPARTMENTS OF THE INTERIOR AND OF THE ARMY RELATIVE TO RESERVOIR PROJECT LANDS § 8.4 Blocking out. Blocking out will be accomplished...

  10. 43 CFR 8.4 - Blocking out.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 43 Public Lands: Interior 1 2010-10-01 2010-10-01 false Blocking out. 8.4 Section 8.4 Public Lands: Interior Office of the Secretary of the Interior JOINT POLICIES OF THE DEPARTMENTS OF THE INTERIOR AND OF THE ARMY RELATIVE TO RESERVOIR PROJECT LANDS § 8.4 Blocking out. Blocking out will be accomplished...

  11. 43 CFR 8.4 - Blocking out.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 43 Public Lands: Interior 1 2013-10-01 2013-10-01 false Blocking out. 8.4 Section 8.4 Public Lands: Interior Office of the Secretary of the Interior JOINT POLICIES OF THE DEPARTMENTS OF THE INTERIOR AND OF THE ARMY RELATIVE TO RESERVOIR PROJECT LANDS § 8.4 Blocking out. Blocking out will be accomplished...

  12. MARINE BOTTOM COMMUNITIES OF BLOCK ISLAND WATERS

    EPA Science Inventory

    The sea has long been an integral part of Block Island's natural history, beginning when the rising sea surrounded the high spot on a Pleistocene terminal moraine that became Block Island. The southern New England continental shelf, which lies around Block Island, and the Great S...

  13. Efficiency droop enhancement in AlGaN deep ultraviolet light-emitting diodes by making whole barriers but the bottom Mg doped

    NASA Astrophysics Data System (ADS)

    Sun, Jie; Sun, Huiqing; Yi, Xinyan; Yang, Xian; Fan, Xuancong; Zhang, Cheng; Zhang, Zhuding; Guo, Zhiyou

    2016-09-01

    Ultra violet light-emitting diodes (UVLEDs) with different types of Mg-doped barriers have been studied. The energy band diagrams, internal quantum efficiency, total output power and radiative recombination rate are investigated by APSYS software. The simulation results show that the UVLED with only a p-doped top barrier get little enhancement comparing to the conventional one, on the contrary the structure with p-doping in all but the bottom barriers has a much better optical and electrical properties due to enhancement of the holes' injection and the electrons' confinement. The efficiency droop is significantly alleviated and the light output power is greatly enhanced. To avoid forming a PN junction by the bottom barrier and the n-AlGaN in the proposed structure, therefore, the bottom barrier isn't p-doped. Then structures with different hole densities in the Mg-doped barriers have been studied numerically and that confirmed the best.

  14. Seismicity of the Jalisco Block

    NASA Astrophysics Data System (ADS)

    Nunez-Cornu, F. J.; Rutz, M.; Camarena-Garcia, M.; Trejo-Gomez, E.; Reyes-Davila, G.; Suarez-Plascencia, C.

    2002-12-01

    In April 2002 began to transmit the stations of the first phase of Jalisco Telemetric Network located at the northwest of Jalisco Block and at the area of Volcan de Fuego (Colima Volcano), in June were deployed four additional MarsLite portable stations in the Bahia de Banderas area, and by the end of August one more portable station at Ceboruco Volcano. The data of these stations jointly with the data from RESCO (Colima Telemetric Network) give us the minimum seismic stations coverage to initiate in a systematic and permanent way the study of the seismicity in this very complex tectonic region. A preliminary analysis of seismicity based on the events registered by the networks using a shutter algorithm, confirms several important features proposed by microseismicity studies carried out between 1996 and 1998. A high level of seismicity inside and below of Rivera plate is observed, this fact suggest a very complex stress pattern acting on this plate. Shallow seismicity at south and east of Bahia de Banderas also suggest a complex stress pattern in this region of the Jalisco Block, events at more than 30 km depth are located under the mouth of the bay and in face of it, a feature denominated Banderas Boundary mark the change of the seismic regime at north of this latitude (20.75°N), however some shallow events were located at the region of Nayarit.

  15. Virtual reality-based regional anaesthesia simulator for axillary nerve blocks.

    PubMed

    Ullrich, Sebastian; Frommen, Thorsten; Rossaint, Rolf; Kuhlen, Torsten

    2009-01-01

    In this paper, we present a simulator for regional anaesthesia for nerve blocks in the axillary plexus region. We use a novel approach based on electric distance to simulate electronic impulse transmission through soft tissue. The traversal of electrons emitted from the needle tip is calculated by modified pathfinding algorithms. Kinematic algorithms visualize the motor response of the forearm by skeletal animation. PMID:19377191

  16. Novel Principle of Contactless Gauge Block Calibration

    PubMed Central

    Buchta, Zdeněk; Řeřucha, Šimon; Mikel, Břetislav; Čížek, Martin; Lazar, Josef; Číp, Ondřej

    2012-01-01

    In this paper, a novel principle of contactless gauge block calibration is presented. The principle of contactless gauge block calibration combines low-coherence interferometry and laser interferometry. An experimental setup combines Dowell interferometer and Michelson interferometer to ensure a gauge block length determination with direct traceability to the primary length standard. By monitoring both gauge block sides with a digital camera gauge block 3D surface measurements are possible too. The principle presented is protected by the Czech national patent No. 302948. PMID:22737012

  17. Peripheral nerve blocks for distal extremity surgery.

    PubMed

    Offierski, Chris

    2013-10-01

    Peripheral nerve block is well suited for distal extremity surgery. Blocking the nerves at the distal extremity is easily done. It does not require ultrasound or stimulators to identify the nerve. Blocking nerves in the distal extremity is safe with low risk of toxicity. The effect of the nerve block is limited to the distribution of the nerve. The distal nerves in the lower extremity are sensory branches of the sciatic nerve. This provides a sensory block only. This has the advantage of allowing the patient to actively contract tendons in the foot and ambulate more quickly after surgery. PMID:24093651

  18. Stages of transformation of block elements

    NASA Astrophysics Data System (ADS)

    Babeshko, V. A.; Evdokimova, O. V.; Babeshko, O. M.

    2016-05-01

    The property to have various representations is investigated for the block elements describing the solutions of boundary-value problems for sets of partial differential equations in the regions with a boundary. These representations have various destinations. One of the representations, which is called packed, is convenient for constructing solutions in block structures on the basis of solutions in separate blocks. Another representation, which is called unpacked, is convenient for a detailed investigation of the properties of solutions in an individual block of the block structure.

  19. BLOCKING OSCILLATOR DOUBLE PULSE GENERATOR CIRCUIT

    DOEpatents

    Haase, J.A.

    1961-01-24

    A double-pulse generator, particuiarly a double-pulse generator comprising a blocking oscillator utilizing a feedback circuit to provide means for producing a second pulse within the recovery time of the blocking oscillator, is described. The invention utilized a passive network which permits adjustment of the spacing between the original pulses derived from the blocking oscillator and further utilizes the original pulses to trigger a circuit from which other pulses are initiated. These other pulses are delayed and then applied to the input of the blocking oscillator, with the result that the output from the oscillator circuit contains twice the number of pulses originally initiated by the blocking oscillator itself.

  20. Aqueous self-assembly of giant bottlebrush block copolymer surfactants as shape-tunable building blocks.

    PubMed

    Fenyves, Ryan; Schmutz, Marc; Horner, Ian J; Bright, Frank V; Rzayev, Javid

    2014-05-28

    Programmed self-assembly of well-defined molecular building blocks enables the fabrication of precisely structured nanomaterials. In this work, we explore a new class of giant polymeric surfactants (Mn = (0.7-4.4) × 10(6) g/mol) with bottlebrush architecture and show that their persistent molecular shape leads to the formation of uniform aggregates in a predictable manner. Amphiphilic bottlebrush block copolymers containing polylactide (PLA) and poly(ethylene oxide) (PEO) side chains were synthesized by a grafting-from method, and their self-assembly in aqueous environment was studied by cryogenic transmission electron microscopy. The produced micelle structures with varying interfacial curvatures and core radii (19-55 nm) boasted rod-like hydrophilic PEO brushes protruding from the hydrophobic PLA cores normal to the interface. Highly uniform spherical micelles with low dispersities were obtained from bottlebrush amphiphiles with packing parameters of ∼0.3, estimated from the polymer structural data. Long cylindrical micelles and other nonspherical aggregates were observed for the first time for compositionally less asymmetric bottlebrush surfactants. Critical micelle concentration values of 1 nM, measured for PEO-rich bottlebrush amphiphiles, indicated an enhanced thermodynamic stability of the produced micelle aggregates. Shape-dependent assembly of bottlebrush surfactants allows for the rational fabrication of a range of micelle structures in narrow morphological windows.

  1. Metal Nanoparticle/Block Copolymer Composite Assembly and Disassembly.

    PubMed

    Li, Zihui; Sai, Hiroaki; Warren, Scott C; Kamperman, Marleen; Arora, Hitesh; Gruner, Sol M; Wiesner, Ulrich

    2009-01-01

    Ligand-stabilized platinum nanoparticles (Pt NPs) were self-assembled with poly(isoprene-block-dimethylaminoethyl methacrylate) (PI-b-PDMAEMA) block copolymers to generate organic-inorganic hybrid materials. High loadings of NPs in hybrids were achieved through usage of N,N-di-(2-(allyloxy)ethyl)-N-3-mercaptopropyl-N-3-methylammonium chloride as the ligand, which provided high solubility of NPs in various solvents as well as high affinity to PDMAEMA. From NP synthesis, existence of sub-1 nm Pt NPs was confirmed by high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) images. Estimations of the Pt NP ligand head group density based on HAADF-STEM images and thermogravimetric analysis (TGA) data yielded results comparable to what has been found for alkanethiol self-assembled monolayers (SAMs) on flat Pt {111} surfaces. Changing the volume fraction of Pt NPs in block copolymer-NP composites yielded hybrids with spherical micellar, wormlike micellar, lamellar and inverse hexagonal morphologies. Disassembly of hybrids with spherical, wormlike micellar, and lamellar morphologies generated isolated metal-NP based nano-spheres, cylinders and sheets, respectively. Results suggest the existence of powerful design criteria for the formation of metal-based nanostructures from designer blocked macromolecules.

  2. Metal Nanoparticle/Block Copolymer Composite Assembly and Disassembly

    PubMed Central

    Li, Zihui; Sai, Hiroaki; Warren, Scott C.; Kamperman, Marleen; Arora, Hitesh; Gruner, Sol M.; Wiesner, Ulrich

    2010-01-01

    Ligand-stabilized platinum nanoparticles (Pt NPs) were self-assembled with poly(isoprene-block-dimethylaminoethyl methacrylate) (PI-b-PDMAEMA) block copolymers to generate organic-inorganic hybrid materials. High loadings of NPs in hybrids were achieved through usage of N,N-di-(2-(allyloxy)ethyl)-N-3-mercaptopropyl-N-3-methylammonium chloride as the ligand, which provided high solubility of NPs in various solvents as well as high affinity to PDMAEMA. From NP synthesis, existence of sub-1 nm Pt NPs was confirmed by high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) images. Estimations of the Pt NP ligand head group density based on HAADF-STEM images and thermogravimetric analysis (TGA) data yielded results comparable to what has been found for alkanethiol self-assembled monolayers (SAMs) on flat Pt {111} surfaces. Changing the volume fraction of Pt NPs in block copolymer-NP composites yielded hybrids with spherical micellar, wormlike micellar, lamellar and inverse hexagonal morphologies. Disassembly of hybrids with spherical, wormlike micellar, and lamellar morphologies generated isolated metal-NP based nano-spheres, cylinders and sheets, respectively. Results suggest the existence of powerful design criteria for the formation of metal-based nanostructures from designer blocked macromolecules. PMID:21103025

  3. Using Tapered Block Copolymers to Create Conducting Nanomaterials

    NASA Astrophysics Data System (ADS)

    Epps, Thomas, III

    2014-03-01

    Soft materials, such as polymers, colloids, surfactants, and liquid crystals, are a technologically important class of matter employed in a variety of applications. One sub-class of soft material, block copolymers, provides the opportunity to design materials with attractive chemical and mechanical properties based on the ability to assemble into periodic structures with nanoscale domain spacings. Several applications for block copolymers currently under investigation in my group include battery and fuel cell membranes, analytical separations membranes, nano-tool templates, precursors to electronic arrays, and drug delivery vehicles. One area of recent progress in the group focuses on the behavior of conventional block copolymer and tapered block copolymer systems for lithium battery membrane applications. We find that we can tune poly(styrene- b-ethylene oxide) diblock copolymer nanostructures by adjusting the lithium counterion and lithium salt concentration, as well as the taper volume fraction and composition. Additionally, we can estimate the effective interaction parameters (χeff) for the salt-doped copolymers to determine the overall influence of tapering on the energetics of copolymer assembly. These tapered materials allow us to design nanostructured membrane systems with increased conductivity and improved mechanical properties in ion transport devices. We gratefully acknowledge AFOSR-PECASE (FA9550-09-1-0706) and NSF-CAREER (DMR-0645586) for financial support.

  4. Vectorial electron transfer in spatially ordered arrays

    SciTech Connect

    Fox, M.A.

    1993-02-01

    Progress was made on synthesis of new materials for directional electron transfer (block copolymers and helical oligopeptides), preparation and characterization of anisotropic composites bearing organics and inorganics, electrocatalysis (redox-activated catalysts), and surface modifications of metals and semiconductors.

  5. Nearly lattice-matched InAlN/AlGaN two-dimensional electron gas heterostructures grown by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Miyoshi, Makoto; Fujita, Shu; Egawa, Takashi

    2015-02-01

    Nearly lattice-matched InAlN/AlxGa1-xN (x = 0.1, 0.21, and 0.34) heterostructures with a 1-nm-thick AlN interfacial layer were grown on AlN/sapphire templates by metalorganic chemical vapor deposition. Capacitance-voltage and Hall effect measurements revealed that two-dimensional electron gases (2DEGs) with high densities exceeding 2 × 1013/cm2 were generated at the heterointerface for all samples. It was confirmed that the generation of high-density 2DEGs can be explained as being due to internal polarization effects. The sheet resistance increased from 1,267 to 1,919 Ω/sq with the increase in Al content in the AlGaN channel, owing to the decreases in 2DEG density and mobility.

  6. Phase behavior of multi-arm star-shaped polystyrene-block-poly(methyl methacrylate) copolymer

    NASA Astrophysics Data System (ADS)

    Jang, Sangshin; Moon, Hong Chul; Bae, Dusik; Kwak, Jonghen; Kim, Jin Kon

    2013-03-01

    We synthesized star-shaped polystyrene-block-poly(methyl methacrylate) copolymer (PS- b-PMMA) by utilizing α-cyclodextrin (α-CD) as a core of the star-shaped block copolymer. Eighteen hydroxyl groups on α-CD were transformed to bromine by the reaction with α-bromoisobutyryl bromide. We found that the number of bromine substituted arms per one α-CD was higher than 16, which was determined by nuclear magnetic resonance and Matrix-assisted laser desorption/ionization. We could control molecular weight of block copolymers by changing polymerization times. The block copolymers were characterized by gel permeation chromatography and nuclear magnetic resonance. Phase behaviors of these star-shaped block copolymers were investigated by small angle X-ray scattering and transmission electron microscopy.

  7. Block truncation signature coding for hyperspectral analysis

    NASA Astrophysics Data System (ADS)

    Chakravarty, Sumit; Chang, Chein-I.

    2008-08-01

    This paper introduces a new signature coding which is designed based on the well-known Block Truncation Coding (BTC). It comprises of bit-maps of the signature blocks generated by different threshold criteria. Two new BTC-based algorithms are developed for signature coding, to be called Block Truncation Signature Coding (BTSC) and 2-level BTSC (2BTSC). In order to compare the developed BTC based algorithms with current binary signature coding schemes such as Spectral Program Analysis Manager (SPAM) developed by Mazer et al. and Spectral Feature-based Binary Coding (SFBC) by Qian et al., three different thresholding functions, local block mean, local block gradient, local block correlation are derived to improve the BTSC performance where the combined bit-maps generated by these thresholds can provide better spectral signature characterization. Experimental results reveal that the new BTC-based signature coding performs more effectively in characterizing spectral variations than currently available binary signature coding methods.

  8. Preparation and Morphology of ABn Mictoarm Block Copolymers

    NASA Astrophysics Data System (ADS)

    Takano, Atsushi; Watanabe, Momoka; Asai, Yusuke; Suzuki, Jiro; Matsushita, Yushu

    A series of ABn mictoarm block copolymers (bottle brush copolymers) consisting of polystyrene (S) as a backbone and polyisoprenes (I) as grafts were precisely synthesized by an anionic polymerization, and their microphase-separated structures were investigated by transmission electron microscopy (TEM) and small-angle X-ray scattering(SAXS). A copolymer with composition of φS =0.57 and number of grafts(n) of 10 shows characteristic cylindrical structure, where microdomains of S reveals hexagonal cross section with non-constant mean curvature interface. While a sample with composition of φS =0.37 and number of grafts(n) of 40 shows spherical structure with rather large S isolated domains and characteristic domain packing manner was found. Furthermore composition dependence of microphase-separated structures for SIn mictoarm block copolymers were investigated and compared to SI diblock copolymer system.

  9. High-performance thermoelectric nanocomposites from nanocrystal building blocks

    NASA Astrophysics Data System (ADS)

    Ibáñez, Maria; Luo, Zhishan; Genç, Aziz; Piveteau, Laura; Ortega, Silvia; Cadavid, Doris; Dobrozhan, Oleksandr; Liu, Yu; Nachtegaal, Maarten; Zebarjadi, Mona; Arbiol, Jordi; Kovalenko, Maksym V.; Cabot, Andreu

    2016-03-01

    The efficient conversion between thermal and electrical energy by means of durable, silent and scalable solid-state thermoelectric devices has been a long standing goal. While nanocrystalline materials have already led to substantially higher thermoelectric efficiencies, further improvements are expected to arise from precise chemical engineering of nanoscale building blocks and interfaces. Here we present a simple and versatile bottom-up strategy based on the assembly of colloidal nanocrystals to produce consolidated yet nanostructured thermoelectric materials. In the case study on the PbS-Ag system, Ag nanodomains not only contribute to block phonon propagation, but also provide electrons to the PbS host semiconductor and reduce the PbS intergrain energy barriers for charge transport. Thus, PbS-Ag nanocomposites exhibit reduced thermal conductivities and higher charge carrier concentrations and mobilities than PbS nanomaterial. Such improvements of the material transport properties provide thermoelectric figures of merit up to 1.7 at 850 K.

  10. Silver-enhanced block copolymer membranes with biocidal activity.

    PubMed

    Madhavan, Poornima; Hong, Pei-Ying; Sougrat, Rachid; Nunes, Suzana P

    2014-01-01

    Silver nanoparticles were deposited on the surface and pore walls of block copolymer membranes with highly ordered pore structure. Pyridine blocks constitute the pore surfaces, complexing silver ions and promoting a homogeneous distribution. Nanoparticles were then formed by reduction with sodium borohydride. The morphology varied with the preparation conditions (pH and silver ion concentration), as confirmed by field emission scanning and transmission electron microscopy. Silver has a strong biocide activity, which for membranes can bring the advantage of minimizing the growth of bacteria and formation of biofilm. The membranes with nanoparticles prepared under different pH values and ion concentrations were incubated with Pseudomonas aeruginosa and compared with the control. The strongest biocidal activity was achieved with membranes containing membranes prepared under pH 9. Under these conditions, the best distribution with small particle size was observed by microscopy.

  11. Lis1 regulates dynein by sterically blocking its mechanochemical cycle.

    PubMed

    Toropova, Katerina; Zou, Sirui; Roberts, Anthony J; Redwine, William B; Goodman, Brian S; Reck-Peterson, Samara L; Leschziner, Andres E

    2014-11-07

    Regulation of cytoplasmic dynein's motor activity is essential for diverse eukaryotic functions, including cell division, intracellular transport, and brain development. The dynein regulator Lis1 is known to keep dynein bound to microtubules; however, how this is accomplished mechanistically remains unknown. We have used three-dimensional electron microscopy, single-molecule imaging, biochemistry, and in vivo assays to help establish this mechanism. The three-dimensional structure of the dynein-Lis1 complex shows that binding of Lis1 to dynein's AAA+ ring sterically prevents dynein's main mechanical element, the 'linker', from completing its normal conformational cycle. Single-molecule experiments show that eliminating this block by shortening the linker to a point where it can physically bypass Lis1 renders single dynein motors insensitive to regulation by Lis1. Our data reveal that Lis1 keeps dynein in a persistent microtubule-bound state by directly blocking the progression of its mechanochemical cycle.

  12. High-performance thermoelectric nanocomposites from nanocrystal building blocks.

    PubMed

    Ibáñez, Maria; Luo, Zhishan; Genç, Aziz; Piveteau, Laura; Ortega, Silvia; Cadavid, Doris; Dobrozhan, Oleksandr; Liu, Yu; Nachtegaal, Maarten; Zebarjadi, Mona; Arbiol, Jordi; Kovalenko, Maksym V; Cabot, Andreu

    2016-03-07

    The efficient conversion between thermal and electrical energy by means of durable, silent and scalable solid-state thermoelectric devices has been a long standing goal. While nanocrystalline materials have already led to substantially higher thermoelectric efficiencies, further improvements are expected to arise from precise chemical engineering of nanoscale building blocks and interfaces. Here we present a simple and versatile bottom-up strategy based on the assembly of colloidal nanocrystals to produce consolidated yet nanostructured thermoelectric materials. In the case study on the PbS-Ag system, Ag nanodomains not only contribute to block phonon propagation, but also provide electrons to the PbS host semiconductor and reduce the PbS intergrain energy barriers for charge transport. Thus, PbS-Ag nanocomposites exhibit reduced thermal conductivities and higher charge carrier concentrations and mobilities than PbS nanomaterial. Such improvements of the material transport properties provide thermoelectric figures of merit up to 1.7 at 850 K.

  13. Kinetic control of block copolymer self-assembly into multicompartment and novel geometry nanoparticles

    NASA Astrophysics Data System (ADS)

    Chen, Yingchao; Wang, Xiaojun; Zhang, Ke; Wooley, Karen; Mays, Jimmy; Percec, Virgil; Pochan, Darrin

    2012-02-01

    Micelles with the segregation of hydrophobic blocks trapped in the same nanoparticle core have been produced through co-self-assembly of two block copolymers in THF/water dilute solution. The dissolution of two block copolymer sharing the same polyacrylic acid PAA blocks in THF undergoes consequent aggregation and phase separation through either slow water titration or quick water addition that triggers the micellar formation. The combination and comparison of the two water addition kinetic pathways are the keys of forming multicompartment structures at high water content. Importantly, the addition of organic diamine provides for acid-base complexation with the PAA side chains which, in turn, plays the key role of trapping unlike hydrophobic blocks from different block copolymers into one nanoparticle core. The kinetic control of solution assembly can be applied to other molecular systems such as dendrimers as well as other block copolymer molecules. Transmission electron microscopy, cryogenic transmission electron microscopy, light scattering have been applied to characterize the micelle structures.

  14. Blocking Losses on an Optical Communications Link

    NASA Technical Reports Server (NTRS)

    Moision, Bruce; Piazzolla, Sabino

    2011-01-01

    Many photon-counting photo-detectors have the property that they become inoperative for some time after detection event. We say the detector is blocked during this time.Blocking produces losses when using the detector as a photon-counter to detect a communications signal. In this paper, we characterize blocking losses for single detectors and for arrays of detectors. For arrays, we discuss conditions under which the output may be approximated as a Poisson point process, and provide a simple approximation to the blocking loss. We show how to extend the analysis to arrays of non-uniformly illuminated arrays.

  15. Functionalized block copolymers as adhesion promoters

    SciTech Connect

    Kent, M.S.; Saunders, R.

    1995-03-01

    The goal of this work is to develop novel functionalized block copolymers to promote adhesion at inorganic substrate/polymer interfaces. We envision several potential advantages of functionalized block copolymers over small molecule coupling agents. Greater control over the structure of the interphase region should result through careful design of the backbone of the copolymer. The number of chains per area, the degree of entanglement between the copolymer and the polymer matrix, the number of sites per chain able to attach to the substrate, and the hydrophobicity of the interphase region can all be strongly affected by the choice of block lengths and the monomer sequence. In addition, entanglement between the copolymer and the polymer matrix, if achieved, should contribute significantly to adhesive strength. Our program involves four key elements: the synthesis of suitable functionalized block copolymers, characterization of the conformation of the copolymers at the interface by neutron reflectivity and atomic force microscopy, characterization of the degree of bonding by spectroscopy, and measurement of the mechanical properties of the interface. In this paper we discuss block copolymers designed as adhesion promoters for the copper/epoxy interface. We have synthesized a diblock with one block containing imidazole groups to bond to copper and a second block containing secondary amines to react with the epoxy matrix. We have also prepared a triblock copolymer containing a hydrophobic middle block. Below we describe the synthesis of the block copolymers by living, ring-opening metathesis polymerization (ROMP) and the first characterization data obtained by neutron reflectivity.

  16. Transient Trifascicular Block in Severe Hyperkalemia.

    PubMed

    Agarwal, Navnit; Singh, Anurag; Gaba, Ripudaman; Jaiswal, Pankaj; Agarwal, Mandavi; Shukla, Ranjeet

    2015-09-01

    Hyperkalemia is a commonly encountered electrolyte abnormality that can significantly alter normal cardiac conduction. Potentially lethal dysrhythmias associated with hyperkalemia include complete heart block and Mobitz Type II second-degree AV block. We report a case of trifascicular block, due to hyperkalemia. The patient's symptoms and electrocardiogram (ECG) evidence of trifascicular block resolved with lowering of serum potassium levels, with subsequent ECG showing left anterior hemiblock. This paper highlights an infrequently reported dysrhythmia associated with hyperkalemia that emergency physicians should be familiar with. PMID:27608872

  17. PACS photometer calibration block analysis

    NASA Astrophysics Data System (ADS)

    Moór, A.; Müller, T. G.; Kiss, C.; Balog, Z.; Billot, N.; Marton, G.

    2014-07-01

    The absolute stability of the PACS bolometer response over the entire mission lifetime without applying any corrections is about 0.5 % (standard deviation) or about 8 % peak-to-peak. This fantastic stability allows us to calibrate all scientific measurements by a fixed and time-independent response file, without using any information from the PACS internal calibration sources. However, the analysis of calibration block observations revealed clear correlations of the internal source signals with the evaporator temperature and a signal drift during the first half hour after the cooler recycling. These effects are small, but can be seen in repeated measurements of standard stars. From our analysis we established corrections for both effects which push the stability of the PACS bolometer response to about 0.2 % (stdev) or 2 % in the blue, 3 % in the green and 5 % in the red channel (peak-to-peak). After both corrections we still see a correlation of the signals with PACS FPU temperatures, possibly caused by parasitic heat influences via the Kevlar wires which connect the bolometers with the PACS Focal Plane Unit. No aging effect or degradation of the photometric system during the mission lifetime has been found.

  18. Blocking for Sequential Political Experiments

    PubMed Central

    Moore, Sally A.

    2013-01-01

    In typical political experiments, researchers randomize a set of households, precincts, or individuals to treatments all at once, and characteristics of all units are known at the time of randomization. However, in many other experiments, subjects “trickle in” to be randomized to treatment conditions, usually via complete randomization. To take advantage of the rich background data that researchers often have (but underutilize) in these experiments, we develop methods that use continuous covariates to assign treatments sequentially. We build on biased coin and minimization procedures for discrete covariates and demonstrate that our methods outperform complete randomization, producing better covariate balance in simulated data. We then describe how we selected and deployed a sequential blocking method in a clinical trial and demonstrate the advantages of our having done so. Further, we show how that method would have performed in two larger sequential political trials. Finally, we compare causal effect estimates from differences in means, augmented inverse propensity weighted estimators, and randomization test inversion. PMID:24143061

  19. Single electron states in polyethylene

    SciTech Connect

    Wang, Y.; MacKernan, D.; Cubero, D. E-mail: n.quirke@imperial.ac.uk; Coker, D. F.; Quirke, N. E-mail: n.quirke@imperial.ac.uk

    2014-04-21

    We report computer simulations of an excess electron in various structural motifs of polyethylene at room temperature, including lamellar and interfacial regions between amorphous and lamellae, as well as nanometre-sized voids. Electronic properties such as density of states, mobility edges, and mobilities are computed on the different phases using a block Lanczos algorithm. Our results suggest that the electronic density of states for a heterogeneous material can be approximated by summing the single phase density of states weighted by their corresponding volume fractions. Additionally, a quantitative connection between the localized states of the excess electron and the local atomic structure is presented.

  20. Synthesis of antibacterial amphiphilic elastomer based on polystyrene-block-polyisoprene-block-polystyrene via thiol-ene addition.

    PubMed

    Keleş, Elif; Hazer, Baki; Cömert, Füsun B

    2013-04-01

    A new type of amphiphilic antibacterial elastomer has been described. Thermoplastic elastomer, polystyrene-block-polyisoprene-block-polystyrene (PS-b-PI-b-PS) triblock copolymer was functionalized in toluene solution by free radical mercaptan addition in order to obtain an amphiphilic antibacterial elastomer. Thiol terminated PEG was grafted through the double bonds of PS-b-PI-b-PS via free radical thiol-ene coupling reaction. The antibacterial properties of the amphiphilic graft copolymers were observed. The original and the modified polymers were used to create microfibers in an electro-spinning process. Topology of the electrospun micro/nanofibers were studied by using scanning electron microscopy (SEM). The chemical structures of the amphiphilic comb type graft copolymers were elucidated by the combination of elemental analysis, (1)H NMR, (13)C NMR, GPC and FTIR.

  1. Optimization of Blocked Designs in fMRI Studies

    ERIC Educational Resources Information Center

    Maus, Barbel; van Breukelen, Gerard J. P.; Goebel, Rainer; Berger, Martijn P. F.

    2010-01-01

    Blocked designs in functional magnetic resonance imaging (fMRI) are useful to localize functional brain areas. A blocked design consists of different blocks of trials of the same stimulus type and is characterized by three factors: the length of blocks, i.e., number of trials per blocks, the ordering of task and rest blocks, and the time between…

  2. Improved Blocking at 25km Resolution?

    NASA Astrophysics Data System (ADS)

    Schiemann, R.; Demory, M. E.; Mizielinski, M.; Roberts, M.; Shaffrey, L.; Strachan, J.; Vidale, P. L.; Matsueda, M.

    2014-12-01

    It has been suggested that relatively coarse resolution of atmospheric general circulation models (AGCMs) limits their ability to represent mid-latitude blocking. Assessing the role of model resolution for blocking is computationally expensive, as multi-decadal simulations at the desired resolution are necessary for a robust estimation of blocking statistics. Here, we use an ensemble of three atmosphere-only global models for which simulations that fulfil this requirement are available at resolutions of roughly 25km horizontal grid spacing in the mid-latitudes. This corresponds to about a fourfold increase in resolution over the highest-resolution CMIP5 (Coupled Model Intercomparison Project, Phase 5) models. The three models are (i) the ECMWF model (IFS) as used in the project Athena, (ii) the MRI-AGCM 3.2, and (iii) our own HadGEM3-GA3 simulations obtained in the UPSCALE project (UK on PrACE - weather-resolving Simulations of Climate for globAL Environmental risk). We use a two-dimensional blocking index to assess the representation of blocking in these simulations and in three reanalyses (ERA-Interim, ERA-40, MERRA). We evaluate the spatial distribution of climatological blocking frequency, the interannual variability of blocking occurrence as well as the persistence of blocking events. Furthermore, the degree to which blocking biases are associated with mean-state biases is quantified in the different models. We find that the representation of blocking remains very sensitive to atmospheric resolution as the grid spacing is reduced to about 25km. The simulated blocking frequency increases with resolution, mostly so as to reduce the model bias, yet there is considerable variation between the results obtained for different models, seasons, and for the Atlantic and Pacific regions.

  3. Nanostructured particles from multi scale building blocks

    NASA Astrophysics Data System (ADS)

    Hampsey, J. Eric

    Nanotechnology has emerged as one of the most exciting new and developing fields in science today. New nanoscale materials and devices such as nanoparticles, nanocomposites, nanowires, and nanosensors could revolutionize the 21st century in the same way that the transistor and Internet led to the information age. One key component in developing these new technologies is to assemble individual atomic and molecular building blocks into larger structures with fundamentally new properties and functions. Nature is very efficient at assembling multi scale building blocks such as proteins, lipids, and minerals into nanostructured materials such as bone, teeth, diatoms, eggshells, seashells, cell membranes, and DNA. Surfactant and colloidal building block can also be assembled into different nanoscale materials and devices by utilizing hydrophobic/hydrophilic and other surface interactions. Using these concepts, this dissertation focuses on the syntheses and applications of nanostructured particles assembled from multi scale building blocks. Important factors in the synthesis of the particles include particle size, particle morphology, pore size and pore structure. Five different types of nanostructured particles assembled from different multi scale building blocks are demonstrated in this work: (1) Spherical metal/silica mesoporous particles with high surface areas and controllable pore sizes, pore structures, and metal content are synthesized from surfactant, silicate, and metal building blocks for catalytic applications; (2) Mesoporous hollow spheres with controllable pore sizes and pore structures are synthesized from surfactant, silica, and polystyrene building blocks; (3) Spherical mesoporous carbon particles with controllable pore sizes and pore structures are templated from silica particles assembled from silica and surfactant building blocks; (4) Spherical mesoporous, microporous, and bimodal carbon particles are synthesized from sucrose and silica building blocks

  4. P-doping-free III-nitride high electron mobility light-emitting diodes and transistors

    SciTech Connect

    Li, Baikui; Tang, Xi; Chen, Kevin J.; Wang, Jiannong

    2014-07-21

    We report that a simple metal-AlGaN/GaN Schottky diode is capable of producing GaN band-edge ultraviolet emission at 3.4 eV at a small forward bias larger than ∼2 V at room temperature. Based on the surface states distribution of AlGaN, a mature impact-ionization-induced Fermi-level de-pinning model is proposed to explain the underlying mechanism of the electroluminescence (EL) process. By experimenting with different Schottky metals, Ni/Au and Pt/Au, we demonstrated that this EL phenomenon is a “universal” property of metal-AlGaN/GaN Schottky diodes. Since this light-emitting Schottky diode shares the same active structure and fabrication processes as the AlGaN/GaN high electron mobility transistors, straight-forward and seamless integration of photonic and electronic functional devices has been demonstrated on doping-free III-nitride heterostructures. Using a semitransparent Schottky drain electrode, an AlGaN/GaN high electron mobility light-emitting transistor is demonstrated.

  5. DNA block copolymers: functional materials for nanoscience and biomedicine.

    PubMed

    Schnitzler, Tobias; Herrmann, Andreas

    2012-09-18

    We live in a world full of synthetic materials, and the development of new technologies builds on the design and synthesis of new chemical structures, such as polymers. Synthetic macromolecules have changed the world and currently play a major role in all aspects of daily life. Due to their tailorable properties, these materials have fueled the invention of new techniques and goods, from the yogurt cup to the car seat belts. To fulfill the requirements of modern life, polymers and their composites have become increasingly complex. One strategy for altering polymer properties is to combine different polymer segments within one polymer, known as block copolymers. The microphase separation of the individual polymer components and the resulting formation of well defined nanosized domains provide a broad range of new materials with various properties. Block copolymers facilitated the development of innovative concepts in the fields of drug delivery, nanomedicine, organic electronics, and nanoscience. Block copolymers consist exclusively of organic polymers, but researchers are increasingly interested in materials that combine synthetic materials and biomacromolecules. Although many researchers have explored the combination of proteins with organic polymers, far fewer investigations have explored nucleic acid/polymer hybrids, known as DNA block copolymers (DBCs). DNA as a polymer block provides several advantages over other biopolymers. The availability of automated synthesis offers DNA segments with nucleotide precision, which facilitates the fabrication of hybrid materials with monodisperse biopolymer blocks. The directed functionalization of modified single-stranded DNA by Watson-Crick base-pairing is another key feature of DNA block copolymers. Furthermore, the appropriate selection of DNA sequence and organic polymer gives control over the material properties and their self-assembly into supramolecular structures. The introduction of a hydrophobic polymer into DBCs

  6. Advanced Electronics Systems 1, Industrial Electronics 3: 9327.03.

    ERIC Educational Resources Information Center

    Dade County Public Schools, Miami, FL.

    The 135 clock-hour course for the 12th year consists of outlines for blocks of instruction on transistor applications to basic circuits, principles of single sideband communications, maintenance practices, preparation for FCC licenses, application of circuits to advanced electronic systems, nonsinusoidal wave shapes, multivibrators, and blocking…

  7. Self-Assembly of Rod-Coil Block Copolymers and Their Application in Electroluminescent Devices

    SciTech Connect

    Tao, Yuefei; Ma, Biwu; Segalman, Rachel A.

    2008-11-18

    The formation of alternating electron transporting and hole transporting 15 nm lamellae within the active layer of an organic light-emitting diode (OLED) is demonstrated to improve device performance. A new multifunctional bipolar rod-coil block copolymer containing a poly(alkoxy phenylenevinylene) (PPV) rod-shaped block as the hole transporting and emitting material and a poly(vinyloxadiazole) coil-shaped electron transporting block is synthesized. This new block copolymer is the active material of a self-assembling multicomponent electroluminescent device that can be deposited in a single step. In the thin film, grazing incidence X-ray scattering and transmission electron microscopy demonstrate that the layers form grains which are oriented bimodally: parallel and perpendicular from the anode. In this mixed orientation, the device demonstrates better performance than those with either pure PPV or a blend of the two analogous homopolymers as the active materials, i.e., higher external quantum efficiency (EQE) and brightness. This improved device performance is mainly attributed to the bipolar functionality and microphase separation of the block copolymer, which provide highly efficient hole and electron recombination at the nanodomain interfaces.

  8. Self-Assembly of Rod-Coil Block Copolymers And Their Application in Electroluminescent Devices

    SciTech Connect

    Tao, Y.; Ma, B.; Segalman, R.A.

    2009-05-26

    The formation of alternating electron transporting and hole transporting 15 nm lamellae within the active layer of an organic light-emitting diode (OLED) is demonstrated to improve device performance. A new multifunctional bipolar rod-coil block copolymer containing a poly(alkoxy phenylenevinylene) (PPV) rod-shaped block as the hole transporting and emitting material and a poly(vinyloxadiazole) coil-shaped electron transporting block is synthesized. This new block copolymer is the active material of a self-assembling multicomponent electroluminescent device that can be deposited in a single step. In the thin film, grazing incidence X-ray scattering and transmission electron microscopy demonstrate that the layers form grains which are oriented bimodally: parallel and perpendicular from the anode. In this mixed orientation, the device demonstrates better performance than those with either pure PPV or a blend of the two analogous homopolymers as the active materials, i.e., higher external quantum efficiency (EQE) and brightness. This improved device performance is mainly attributed to the bipolar functionality and microphase separation of the block copolymer, which provide highly efficient hole and electron recombination at the nanodomain interfaces.

  9. Block-based image hashing with restricted blocking strategy for rotational robustness

    NASA Astrophysics Data System (ADS)

    Xiang, Shijun; Yang, Jianquan

    2012-12-01

    Image hashing is a potential solution for image content authentication (a desired image hashing algorithm should be robust to common image processing operations and various geometric distortions). In the literature, researchers pay more attention to block-based image hashing algorithms due to their robustness to common image processing operations (such as lossy compression, low-pass filtering, and additive noise). However, the block-based hashing strategies are sensitive to rotation processing operations. This indicates that the robustness of the block-based hashing methods against rotation operations is an important issue. Towards this direction, in this article we propose a restricted blocking strategy by investigating effect of two rotation operations on an image and its blocks in both theoretical and experimental ways. Furthermore, we apply the proposed blocking strategy for the recently reported non-negative matrix factorization (NMF) hashing. Experimental results have demonstrated the validity of the block-based hashing algorithms with restricted blocking strategy for rotation operations.

  10. Biopolymers Containing Unnatural Building Blocks

    SciTech Connect

    Schultz, Peter G.

    2013-06-30

    Although the main chain structure of polymers has a profound effect on their materials properties, the side groups can also have dramatic effects on their properties including conductivity, liquid crystallinity, hydrophobicity, elasticity and biodegradability. Unfortunately control over the side chain structure of polymers remains a challenge – it is difficult to control the sequence of chain elongation when mixtures of monomers are polymerized, and postpolymerization side chain modification is made difficult by polymer effects on side chain reactivity. In contrast, the mRNA templated synthesis of polypeptides on the ribosome affords absolute control over the primary sequence of the twenty amino acid monomers. Moreover, the length of the biopolymer is precisely controlled as are sites of crosslinking. However, whereas synthetic polymers can be synthesized from monomers with a wide range of chemically defined structures, ribosomal biosynthesis is largely limited to the 20 canonical amino acids. For many applications in material sciences, additional building blocks would be desirable, for example, amino acids containing metallocene, photoactive, and halogenated side chains. To overcome this natural constraint we have developed a method that allows unnatural amino acids, beyond the common twenty, to be genetically encoded in response to nonsense or frameshift codons in bacteria, yeast and mammalian cells with high fidelity and good yields. Here we have developed methods that allow identical or distinct noncanonical amino acids to be incorporated at multiple sites in a polypeptide chain, potentially leading to a new class of templated biopolymers. We have also developed improved methods for genetically encoding unnatural amino acids. In addition, we have genetically encoded new amino acids with novel physical and chemical properties that allow selective modification of proteins with synthetic agents. Finally, we have evolved new metal-ion binding sites in proteins

  11. Erosion patterns on dissolving blocks

    NASA Astrophysics Data System (ADS)

    Courrech du Pont, Sylvain; Cohen, Caroline; Derr, Julien; Berhanu, Michael

    2016-04-01

    Patterns in nature are shaped under water flows and wind action, and the understanding of their morphodynamics goes through the identification of the physical mechanisms at play. When a dissoluble body is exposed to a water flow, typical patterns with scallop-like shapes may appear [1,2]. These shapes are observed on the walls of underground rivers or icebergs. We experimentally study the erosion of dissolving bodies made of salt, caramel or ice into water solutions without external flow. The dissolving mixture, which is created at the solid/liquid interface, undergoes a buoyancy-driven instability comparable to a Rayleigh-Bénard instability so that the dissolving front destabilizes into filaments. This mechanism yields to spatial variations of solute concentration and to differential dissolution of the dissolving block. We first observe longitudinal stripes with a well defined wavelength, which evolve towards chevrons and scallops that interact and move again the dissolving current. Thanks to a careful analysis of the competing physical mechanisms, we propose scaling laws, which account for the characteristic lengths and times of the early regime in experiments. The long-term evolution of patterns is understood qualitatively. A close related mechanism has been proposed to explain structures observed on the basal boundary of ice cover on brakish lakes [3] and we suggest that our experiments are analogous and explain the scallop-like patterns on iceberg walls. [1] P. Meakin and B. Jamtveit, Geological pattern formation by growth and dissolution in aqueous systems, Proc. R. Soc. A 466, 659-694 (2010). [2] P.N. Blumberg and R.L. Curl, Experimental and theoretical studies of dissolution roughness, J. Fluid Mech. 65, 735-751 (1974). [3] L. Solari and G. Parker, Morphodynamic modelling of the basal boundary of ice cover on brakish lakes, J.G.R. 118, 1432-1442 (2013).

  12. Block Study: Learning About Your Local Community.

    ERIC Educational Resources Information Center

    Eckbreth, Catherine

    Designed for 7th- and 8th-grade students, five lessons using a block of houses in an urban neighborhood help students learn about the history of a neighborhood, the owners of the houses, and the style and architectural features of the homes. Although this unit has been developed for a specific neighborhood, a similar block study could be conducted…

  13. Block structured dynamics and neuronal coding

    NASA Astrophysics Data System (ADS)

    González-Miranda, J. M.

    2005-11-01

    When certain control parameters of nervous cell models are varied, complex bifurcation structures develop in which the dynamical behaviors available appear classified in blocks, according to criteria of dynamical likelihood. This block structured dynamics may be a clue to understand how activated neurons encode information by firing spike trains of their action potentials.

  14. Improving massive experiments with threshold blocking.

    PubMed

    Higgins, Michael J; Sävje, Fredrik; Sekhon, Jasjeet S

    2016-07-01

    Inferences from randomized experiments can be improved by blocking: assigning treatment in fixed proportions within groups of similar units. However, the use of the method is limited by the difficulty in deriving these groups. Current blocking methods are restricted to special cases or run in exponential time; are not sensitive to clustering of data points; and are often heuristic, providing an unsatisfactory solution in many common instances. We present an algorithm that implements a widely applicable class of blocking-threshold blocking-that solves these problems. Given a minimum required group size and a distance metric, we study the blocking problem of minimizing the maximum distance between any two units within the same group. We prove this is a nondeterministic polynomial-time hard problem and derive an approximation algorithm that yields a blocking where the maximum distance is guaranteed to be, at most, four times the optimal value. This algorithm runs in O(n log n) time with O(n) space complexity. This makes it, to our knowledge, the first blocking method with an ensured level of performance that works in massive experiments. Whereas many commonly used algorithms form pairs of units, our algorithm constructs the groups flexibly for any chosen minimum size. This facilitates complex experiments with several treatment arms and clustered data. A simulation study demonstrates the efficiency and efficacy of the algorithm; tens of millions of units can be blocked using a desktop computer in a few minutes. PMID:27382151

  15. Precision aligned split V-block

    DOEpatents

    George, Irwin S.

    1984-01-01

    A precision aligned split V-block for holding a workpiece during a milling operation having an expandable frame for allowing various sized workpieces to be accommodated, is easily secured directly to the mill table and having key lugs in one base of the split V-block that assures constant alignment.

  16. LJ Teaching Award 2007: Rick J. Block

    ERIC Educational Resources Information Center

    Berry, John N., III

    2008-01-01

    This article profiles Rick J. Block, the recipient of the 2008 "LJ Teaching Award." Despite his "day job" and a heavy schedule of classroom teaching, Block finds time and intense energy to be the mentor, internship supervisor, and individual advisor to the students who fill every available seat in his classes at two LIS programs. In addition to…

  17. How Block Scheduling Reform Effects Classroom Practice

    ERIC Educational Resources Information Center

    Veal, William R.; Flinders, David J.

    2001-01-01

    Block scheduling has become an increasingly popular reform movement for schools, school districts, and principals to enact. Much of the decision making as to whether to implement some type of block scheduling has occurred without understanding the implications this type of reform has on teachers and their classroom practices. This paper reports on…

  18. Young Children's Block Play and Mathematical Learning

    ERIC Educational Resources Information Center

    Park, Boyoung; Chae, Jeong-Lim; Boyd, Barbara Foulks

    2008-01-01

    This qualitative study investigated young children's mathematical engagement in play with wooden unit blocks. Two boys, ages 6 and 7, were independently observed completing the task of filling outlined regions with the various sets of blocks. Three major mathematical actions were observed: categorizing geometric shapes, composing a larger shape…

  19. Block Grants: Federal Data Collection Provisions.

    ERIC Educational Resources Information Center

    General Accounting Office, Washington, DC. Div. of Human Resources.

    This fact sheet compares statutory data collection and reporting provisions of the federal education block grant (chapter 2 of the Education Consolidation and Improvement Act of 1981) with the nine other block grant programs funded in fiscal year 1986; data on statutory administrative cost limits are also provided. Each grant's legislation was…

  20. Light extraction block with curved surface

    DOEpatents

    Levermore, Peter; Krall, Emory; Silvernail, Jeffrey; Rajan, Kamala; Brown, Julia J.

    2016-03-22

    Light extraction blocks, and OLED lighting panels using light extraction blocks, are described, in which the light extraction blocks include various curved shapes that provide improved light extraction properties compared to parallel emissive surface, and a thinner form factor and better light extraction than a hemisphere. Lighting systems described herein may include a light source with an OLED panel. A light extraction block with a three-dimensional light emitting surface may be optically coupled to the light source. The three-dimensional light emitting surface of the block may includes a substantially curved surface, with further characteristics related to the curvature of the surface at given points. A first radius of curvature corresponding to a maximum principal curvature k.sub.1 at a point p on the substantially curved surface may be greater than a maximum height of the light extraction block. A maximum height of the light extraction block may be less than 50% of a maximum width of the light extraction block. Surfaces with cross sections made up of line segments and inflection points may also be fit to approximated curves for calculating the radius of curvature.

  1. Block Play: Building a Foundation for Literacy.

    ERIC Educational Resources Information Center

    Stroud, Judith E.

    1995-01-01

    Reviews studies suggesting benefits of block play for literacy development that provides actual reading and writing experiences. Suggests that block play centers can be literacy-enhanced with materials that are authentic, useful, and appropriate, including: thematic books, magazines, architectural blueprints, envelopes, and adding machine tape.…

  2. A Nonlinear Multi-Scale Interaction Model for Atmospheric Blocking: The Eddy-Blocking Matching Mechanism

    NASA Astrophysics Data System (ADS)

    Luo, Dehai; Cha, Jing; Zhong, Linhao; Dai, Aiguo

    2014-05-01

    In this paper, a nonlinear multi-scale interaction (NMI) model is used to propose an eddy-blocking matching (EBM) mechanism to account for how synoptic eddies reinforce or suppress a blocking flow. It is shown that the spatial structure of the eddy vorticity forcing (EVF) arising from upstream synoptic eddies determines whether an incipient block can grow into a meandering blocking flow through its interaction with the transient synoptic eddies from the west. Under certain conditions, the EVF exhibits a low-frequency oscillation on timescales of 2-3 weeks. During the EVF phase with a negative-over- positive dipole structure, a blocking event can be resonantly excited through the transport of eddy energy into the incipient block by the EVF. As the EVF changes into an opposite phase, the blocking decays. The NMI model produces life cycles of blocking events that resemble observations. Moreover, it is shown that the eddy north-south straining is a response of the eddies to a dipole- or Ω-type block. In our model, as in observations, two synoptic anticyclones (cyclones) can attract and merge with one another as the blocking intensifies, but only when the feedback of the blocking on the eddies is included. Thus, we attribute the eddy straining and associated vortex interaction to the feedback of the intensified blocking on synoptic eddies. The results illustrate the concomitant nature of the eddy deformation, whose role as a PV source for the blocking flow becomes important only during the mature stage of a block. Our EBM mechanism suggests that an incipient block flow is amplified (or suppressed) under certain conditions by the EVF coming from the upstream of the blocking region.

  3. Evaluation of neurolytic blocks using phenol and cryogenic block in the management of chronic pain.

    PubMed

    Ramamurthy, S; Walsh, N E; Schoenfeld, L S; Hoffman, J

    1989-06-01

    This study compared the use of phenol and cryogenic blocks for neurolysis in 28 patients. Patients were assigned randomly to receive peripheral nerve blocks with either phenol or cryoanalgesia. Significantly more patients in the phenol group received 20% or greater relief at 2, 12, and 24 wk than patients in the cryogenic group. Only 27% of patients received significant relief, however, indicating that neurolytic blocks were not particularly effective even though local anesthetic blocks produced significant but temporary pain relief. PMID:2732524

  4. Ultrasonographic evaluation of neck hematoma and block salvage after failed neurostimulation-guided interscalene block.

    PubMed

    Howell, Stephen M; Unger, M W Todd; Colson, James D; Serafini, Mario

    2010-11-01

    Ultrasound-guided regional anesthetic techniques have shown some advantages over conventional paresthesia and neurostimulation techniques. We report the case of a neurostimulation-guided continuous interscalene block that would have ended in complication were it not for experience with ultrasound-guided regional anesthesia. Familiarity with ultrasound-guided block techniques permitted assessment of a neck hematoma during interscalene block and ultimately allowed successful peripheral nerve block.

  5. GaN Based Electronics And Their Applications

    NASA Astrophysics Data System (ADS)

    Ren, Fan

    2002-03-01

    The Group III-nitrides were initially researched for their promise to fill the void for a blue solid state light emitter. Electronic devices from III-nitrides have been a more recent phenomenon. The thermal conductivity of GaN is three times that of GaAs. For high power or high temperature applications, good thermal conductivity is imperative for heat removal or sustained operation at elevated temperatures. The development of III-N and other wide bandgap technologies for high temperature applications will likely take place at the expense of competing technologies, such as silicon-on-insulator (SOI), at moderate temperatures. At higher temperatures (>300°C), novel devices and components will become possible. The automotive industry will likely be one of the largest markets for such high temperature electronics. One of the most noteworthy advantages for III-N materials over other wide bandgap semiconductors is the availability of AlGaN/GaN and InGaN/GaN heterostructures. A 2-dimensional electron gas (2DEG) has been shown to exist at the AlGaN/GaN interface, and heterostructure field effect transistors (HFETs) from these materials can exhibit 2DEG mobilities approaching 2000 cm2 / V?s at 300K. Power handling capabilities of 12 W/mm appear feasible, and extraordinary large signal performance has already been demonstrated, with a current state-of-the-art of >10W/mm at X-band. In this talk, high speed and high temperature AlGaN/GaN HEMTs as well as MOSHEMTs, high breakdown voltage GaN (>6KV) and AlGaN (9.7 KV) Schottky diodes, and their applications will be presented.

  6. Block copolymer structures in nano-pores

    NASA Astrophysics Data System (ADS)

    Pinna, Marco; Guo, Xiaohu; Zvelindovsky, Andrei

    2010-03-01

    We present results of coarse-grained computer modelling of block copolymer systems in cylindrical and spherical nanopores on Cell Dynamics Simulation. We study both cylindrical and spherical pores and systematically investigate structures formed by lamellar, cylinders and spherical block copolymer systems for various pore radii and affinity of block copolymer blocks to the pore walls. The obtained structures include: standing lamellae and cylinders, ``onions,'' cylinder ``knitting balls,'' ``golf-ball,'' layered spherical, ``virus''-like and mixed morphologies with T-junctions and U-type defects [1]. Kinetics of the structure formation and the differences with planar films are discussed. Our simulations suggest that novel porous nano-containers can be formed by confining block copolymers in pores of different geometries [1,2]. [4pt] [1] M. Pinna, X. Guo, A.V. Zvelindovsky, Polymer 49, 2797 (2008).[0pt] [2] M. Pinna, X. Guo, A.V. Zvelindovsky, J. Chem. Phys. 131, 214902 (2009).

  7. Bullet-Block Science Video Puzzle

    NASA Astrophysics Data System (ADS)

    Shakur, Asif

    2015-01-01

    A science video blog,1 which has gone viral, shows a wooden block shot by a vertically aimed rifle. The video2 shows that the block hit dead center goes exactly as high as the one shot off-center. (Fig. 1). The puzzle is that the block shot off-center carries rotational kinetic energy in addition to the gravitational potential energy. This leads a majority of the bloggers to claim that the block shot off-center should not go as high as the one shot dead center. Others have claimed that the energy tied up as rotational energy is insignificant and the two blocks should rise to the same height within experimental error.

  8. A Parent's Guide to Imaginative Block Play: Why Blocks Are Still One of America's Favorite Toys.

    ERIC Educational Resources Information Center

    T.C. Timber/Habermaass Corp., Skaneateles, NY.

    This brochure, developed by a manufacturer of wooden blocks and trains, offers advice on the selection and use of toy blocks with children. The guide asserts that blocks, while often thought of as the most simple of toys, have great strength as creativity builders. Topics discussed in the brochure include: "Why We Want Our Children to Play"; "Why…

  9. Electron radiography

    DOEpatents

    Merrill, Frank E.; Morris, Christopher

    2005-05-17

    A system capable of performing radiography using a beam of electrons. Diffuser means receive a beam of electrons and diffuse the electrons before they enter first matching quadrupoles where the diffused electrons are focused prior to the diffused electrons entering an object. First imaging quadrupoles receive the focused diffused electrons after the focused diffused electrons have been scattered by the object for focusing the scattered electrons. Collimator means receive the scattered electrons and remove scattered electrons that have scattered to large angles. Second imaging quadrupoles receive the collimated scattered electrons and refocus the collimated scattered electrons and map the focused collimated scattered electrons to transverse locations on an image plane representative of the electrons' positions in the object.

  10. Synthesis and Characterization of a Novel -D-B-A-B- Block Copolymer System for Light Harvesting Applications

    NASA Technical Reports Server (NTRS)

    Sun, Sam-Shajing; Fan, Zhen; Wang, Yiqing; Taft, Charles; Haliburton, James; Maaref, Shahin

    2002-01-01

    Supra-molecular or nano-structured electro-active polymers are potentially useful for developing variety inexpensive and flexible shaped opto-electronic devices. In the case of organic photovoltaic materials or devices, for instance, photo induced electrons and holes need to be separated and transported in organic acceptor (A) and donor (D) phases respectively. In this paper, preliminary results of synthesis and characterizations of a coupled block copolymers containing a conjugated donor block RO-PPV and a conjugated acceptor block SF-PPV and some of their electronic/optical properties are presented. While the donor block film has a strong PL emission at around 570 nm, and acceptor block film has a strong PL emission at around 590 nm, the PL emissions of final -B-D-B-A- block copolymer films were quenched over 99%. Experimental results demonstrated an effective photo induced electron transfer and charge separation due to the interfaces of donor and acceptor blocks. The system is very promising for variety light harvesting applications, including "plastic" photovoltaic devices.

  11. Atmospheric Blocking in the Northern Hemisphere.

    NASA Astrophysics Data System (ADS)

    Knox, John Lewis

    Blocking is generally understood as the obstruction on a large scale of the normal west - to - east motion of mid-latitude pressure systems. It is a persistent phenomenon lasting from one to several weeks and the resulting prolonged weather regimes may have serious economic and social consequences. The recent Northern Hemisphere winters, starting with 1976 -77, featured unusually large circulation anomalies, many of which can be directly related to prolonged episodes of large scale blocking. The intent of this study is to investigate the statistics and certain diagnostics of blocking in the Northern Hemisphere. The first of the three primary objectives is to present and interpret the spatial and temporal distribution of blocking during the past 33 years. We develop objective identification criteria, adaptable to machine processing methods, by relating the blocking anticyclone to its associated positive anomaly of 5-day mean 500MB height. Anomalies meeting the criteria are called 'blocking signatures.' We present the seasonal frequency of occurrence of these signatures by longitude and by area. The results are in good agreement with published studies for the oceans, but they also reveal a high frequency of blocking signatures over the Northeastern Canadian Archipelago. This result, dubbed the 'Baffin Island Paradox' is further investigated and rationalized. A catalogue has been prepared which identifies the date, centre location and magnitude of every blocking signature which occurred from January 1, 1946 to December 31, 1978. A supplementary Catalogue identifies sequences of these signatures corresponding to actual blocking episodes. The second objective is to investigate whether regions with high incidence of blocking, in either the developing or the mature stage, features non-Gaussian distributions of 5-day mean geopotential. During winter, fields of significantly low kurtosis are found in certain mid-latitude regions where the genesis and amplification of

  12. EDITORIAL: Synaptic electronics Synaptic electronics

    NASA Astrophysics Data System (ADS)

    Demming, Anna; Gimzewski, James K.; Vuillaume, Dominique

    2013-09-01

    edge of chaos, where complex phenomena, including creativity and intelligence, may emerge'. Also in this issue R Stanley Williams and colleagues report results from simulations that demonstrate the potential for using Mott transistors as building blocks for scalable neuristor-based integrated circuits without transistors [5]. The scalability of neural chip designs is also tackled in the design reported by Narayan Srinivasa and colleagues in the US [6]. Meanwhile Carsten Timm and Massimiliano Di Ventra describe simulations of a molecular transistor in which electrons strongly coupled to a vibrational mode lead to a Franck-Condon (FC) blockade that mimics the spiking action potentials in synaptic memory behaviour [7]. The 'atomic switches' used to demonstrate synaptic behaviour by a collaboration of researchers in California and Japan also come under further scrutiny in this issue. James K Gimzewski and colleagues consider the difference between the behaviour of an atomic switch in isolation and in a network [8]. As the authors point out, 'The work presented represents steps in a unified approach of experimentation and theory of complex systems to make atomic switch networks a uniquely scalable platform for neuromorphic computing'. Researchers in Germany [9] and Sweden [10] also report on theoretical approaches to modelling networks of memristive elements and complementary resistive switches for synaptic devices. As Vincent Derycke and colleagues in France point out, 'Actual experimental demonstrations of neural network type circuits based on non-conventional/non-CMOS memory devices and displaying function learning capabilities remain very scarce'. They describe how their work using carbon nanotubes provides a rare demonstration of actual function learning with synapses based on nanoscale building blocks [11]. However, this is far from the only experimental work reported in this issue, others include: short-term memory of TiO2-based electrochemical capacitors [12]; a

  13. Nanopatterning of ultrananocrystalline diamond thin films via block copolymer lithography.

    SciTech Connect

    Ramanathan, M.; Darling, S. B.; Sumant, A. V.; Auciello, O.

    2010-07-01

    Nanopatterning of diamond surfaces is critical for the development of diamond-based microelectromechanical system/nanoelectromechanical system (MEMS/NEMS), such as resonators or switches. Micro-/nanopatterning of diamond materials is typically done using photolithography or electron beam lithography combined with reactive ion etching (RIE). In this work, we demonstrate a simple process, block copolymer (BCP) lithography, for nanopatterning of ultrananocrystalline diamond (UNCD) films to produce nanostructures suitable for the fabrication of NEMS based on UNCD. In BCP lithography, nanoscale self-assembled polymeric domains serve as an etch mask for pattern transfer. The authors used thin films of a cylinder-forming organic-inorganic BCP, poly(styrene-block-ferrocenyldimethylsilane), PS-b-PFS, as an etch mask on the surface of UNCD films. Orientational control of the etch masking cylindrical PFS blocks is achieved by manipulating the polymer film thickness in concert with the annealing treatment. We have observed that the surface roughness of UNCD layers plays an important role in transferring the pattern. Oxygen RIE was used to etch the exposed areas of the UNCD film underneath the BCP. Arrays of both UNCD posts and wirelike structures have been created using the same starting polymeric materials as the etch mask.

  14. Stereocomplex Formation in Incompatible Racemic Chiral Polylactide Block Copolymers

    NASA Astrophysics Data System (ADS)

    Sun, Lu; Zhu, Lei

    2006-03-01

    Stereocomplexes in incompatible racemic chiral polylactide (PLA) block copolymers have not been widely studied. In this work, we synthesized PLLA and PDLA containing block copolymers by ring opening polymerization of L- and D-lactides from hydroxyl-terminated hydrophilic [poly(ethylene oxide) (PEO)] and hydrophobic [poly(ethylene-co-1,2-butylene) (PEB)] oligomers, respectively. Two samples PEO-b-PLLA (2,000-5,400) and PEB-b-PDLA (4,200-5,400) were chosen. The stereocomplexes were cast from equal molar blends of above two block copolymers in chloroform solution, followed by two different thermal treatments before stereocomplex formation; The blend was either heated to 250 C and quickly quench to 160 C or heated to 250 C for 15 min and quench to 160 C for stereocomplex crystal growth. Before the formation of stereocomplexes, lamellar and cylindrical morphologies were observed in blends for the first and second thermal treatments, respectively, as evidenced by small-angle X-ray scattering (SAXS). After complete crystal growth, the 100% stereocomplexes was confirmed by differential scanning calorimetry and wide-angle X-ray diffraction (WAXD). The morphologies of stereocomplexes grown from these two pre-existing microphases (lamellar vs. cylindrical) were studied by time-resolved SAXS and transmission electron microscopy (TEM).

  15. Circular block matching based video stabilization

    NASA Astrophysics Data System (ADS)

    Xu, Lidong; Fu, Fangwen; Lin, Xinggang

    2005-07-01

    Video sequences captured by handheld digital camera need to be stabilized to eliminate the tiresome effects caused by camera"s undesirable shake or jiggle. The key issue of video stabilization is to estimate the global motion parameters between two successive frames. In this paper, a novel circular block matching algorithm is proposed to estimate the global motion parameters. This algorithm can deal with not only translational motion but even large rotational motion. For an appointed circular block in current frame, a four-dimensional rotation invariant feature vector is firstly extracted from it and used to judge if it is an effective block. Then the rotation invariant features based circular block matching process is performed to find the best matching blocks in reference frame for those effective blocks. With the matching results of any two effective blocks, a two-dimensional motion model is constructed to produce one group of frame motion parameters. A statistical method is proposed to calculate the estimated global motion parameters with all groups of global motion parameters. Finally, using the estimated motion parameters as the initial values, an iteration algorithm is introduced to obtain the refined global motion parameters. The experimental results show that the proposed algorithm is excellent in stabilizing frames with even burst global translational and rotational motions.

  16. Development of Alkali Activated Geopolymer Masonry Blocks

    NASA Astrophysics Data System (ADS)

    Venugopal, K.; Radhakrishna; Sasalatti, Vinod

    2016-09-01

    Cement masonry units are not considered as sustainable since their production involves consumption of fuel, cement and natural resources and therefore it is essential to find alternatives. This paper reports on making of geopolymer solid & hollow blocks and masonry prisms using non conventional materials like fly ash, ground granulated blast furnace slag (GGBFS) and manufactured sand and curing at ambient temperature. They were tested for water absorption, initial rate of water absorption, dry density, dimensionality, compressive, flexural and bond-strength which were tested for bond strength with and without lateral confinement, modulus of elasticity, alternative drying & wetting and masonry efficiency. The properties of geopolymer blocks were found superior to traditional masonry blocks and the masonry efficiency was found to increase with decrease in thickness of cement mortar joints. There was marginal difference in strength between rendered and unrendered geopolymer masonry blocks. The percentage weight gain after 7 cycles was less than 6% and the percentage reduction in strength of geopolymer solid blocks and hollow blocks were 26% and 28% respectively. Since the properties of geopolymer blocks are comparatively better than the traditional masonry they can be strongly recommended for structural masonry.

  17. Inferior alveolar nerve block: Alternative technique

    PubMed Central

    Thangavelu, K.; Kannan, R.; Kumar, N. Senthil

    2012-01-01

    Background: Inferior alveolar nerve block (IANB) is a technique of dental anesthesia, used to produce anesthesia of the mandibular teeth, gingivae of the mandible and lower lip. The conventional IANB is the most commonly used the nerve block technique for achieving local anesthesia for mandibular surgical procedures. In certain cases, however, this nerve block fails, even when performed by the most experienced clinician. Therefore, it would be advantageous to find an alternative simple technique. Aim and Objective: The objective of this study is to find an alternative inferior alveolar nerve block that has a higher success rate than other routine techniques. To this purpose, a simple painless inferior alveolar nerve block was designed to anesthetize the inferior alveolar nerve. Materials and Methods: This study was conducted in Oral surgery department of Vinayaka Mission's dental college Salem from May 2009 to May 2011. Five hundred patients between the age of 20 years and 65 years who required extraction of teeth in mandible were included in the study. Out of 500 patients 270 were males and 230 were females. The effectiveness of the IANB was evaluated by using a sharp dental explorer in the regions innervated by the inferior alveolar, lingual, and buccal nerves after 3, 5, and 7 min, respectively. Conclusion: This study concludes that inferior alveolar nerve block is an appropriate alternative nerve block to anesthetize inferior alveolar nerve due to its several advantages. PMID:25885503

  18. Gaussian curvature analysis allows for automatic block placement in multi-block hexahedral meshing.

    PubMed

    Ramme, Austin J; Shivanna, Kiran H; Magnotta, Vincent A; Grosland, Nicole M

    2011-10-01

    Musculoskeletal finite element analysis (FEA) has been essential to research in orthopaedic biomechanics. The generation of a volumetric mesh is often the most challenging step in a FEA. Hexahedral meshing tools that are based on a multi-block approach rely on the manual placement of building blocks for their mesh generation scheme. We hypothesise that Gaussian curvature analysis could be used to automatically develop a building block structure for multi-block hexahedral mesh generation. The Automated Building Block Algorithm incorporates principles from differential geometry, combinatorics, statistical analysis and computer science to automatically generate a building block structure to represent a given surface without prior information. We have applied this algorithm to 29 bones of varying geometries and successfully generated a usable mesh in all cases. This work represents a significant advancement in automating the definition of building blocks.

  19. Gaussian curvature analysis allows for automatic block placement in multi-block hexahedral meshing.

    PubMed

    Ramme, Austin J; Shivanna, Kiran H; Magnotta, Vincent A; Grosland, Nicole M

    2011-10-01

    Musculoskeletal finite element analysis (FEA) has been essential to research in orthopaedic biomechanics. The generation of a volumetric mesh is often the most challenging step in a FEA. Hexahedral meshing tools that are based on a multi-block approach rely on the manual placement of building blocks for their mesh generation scheme. We hypothesise that Gaussian curvature analysis could be used to automatically develop a building block structure for multi-block hexahedral mesh generation. The Automated Building Block Algorithm incorporates principles from differential geometry, combinatorics, statistical analysis and computer science to automatically generate a building block structure to represent a given surface without prior information. We have applied this algorithm to 29 bones of varying geometries and successfully generated a usable mesh in all cases. This work represents a significant advancement in automating the definition of building blocks. PMID:20924860

  20. Poly(vinylidene fluoride)/nickel nanocomposites from semicrystalline block copolymer precursors

    NASA Astrophysics Data System (ADS)

    Voet, Vincent S. D.; Tichelaar, Martijn; Tanase, Stefania; Mittelmeijer-Hazeleger, Marjo C.; ten Brinke, Gerrit; Loos, Katja

    2012-12-01

    The fabrication of nanoporous poly(vinylidene fluoride) (PVDF) and PVDF/nickel nanocomposites from semicrystalline block copolymer precursors is reported. Polystyrene-block-poly(vinylidene fluoride)-block-polystyrene (PS-b-PVDF-b-PS) is prepared through functional benzoyl peroxide initiated polymerization of VDF, followed by atom transfer radical polymerization (ATRP) of styrene. The crystallization of PVDF plays a dominant role in the formation of the block copolymer structure, resulting in a spherulitic superstructure with an internal crystalline-amorphous lamellar nanostructure. The block copolymer promotes the formation of the ferroelectric β-polymorph of PVDF. Selective etching of the amorphous regions with nitric acid leads to nanoporous PVDF, which functions as a template for the generation of PVDF/Ni nanocomposites. The lamellar nanostructure and the β-crystalline phase are conserved during the etching procedure and electroless nickel deposition.The fabrication of nanoporous poly(vinylidene fluoride) (PVDF) and PVDF/nickel nanocomposites from semicrystalline block copolymer precursors is reported. Polystyrene-block-poly(vinylidene fluoride)-block-polystyrene (PS-b-PVDF-b-PS) is prepared through functional benzoyl peroxide initiated polymerization of VDF, followed by atom transfer radical polymerization (ATRP) of styrene. The crystallization of PVDF plays a dominant role in the formation of the block copolymer structure, resulting in a spherulitic superstructure with an internal crystalline-amorphous lamellar nanostructure. The block copolymer promotes the formation of the ferroelectric β-polymorph of PVDF. Selective etching of the amorphous regions with nitric acid leads to nanoporous PVDF, which functions as a template for the generation of PVDF/Ni nanocomposites. The lamellar nanostructure and the β-crystalline phase are conserved during the etching procedure and electroless nickel deposition. Electronic supplementary information (ESI) available