Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters.

PubMed

Zhao, Chao; Ebaid, Mohamed; Zhang, Huafan; Priante, Davide; Janjua, Bilal; Zhang, Daliang; Wei, Nini; Alhamoud, Abdullah A; Shakfa, Mohammad Khaled; Ng, Tien Khee; Ooi, Boon S

2018-06-13

p-Type doping in wide bandgap and new classes of ultra-wide bandgap materials has long been a scientific and engineering problem. The challenges arise from the large activation energy of dopants and high densities of dislocations in materials. We report here, a significantly enhanced p-type conduction using high-quality AlGaN nanowires. For the first time, the hole concentration in Mg-doped AlGaN nanowires is quantified. The incorporation of Mg into AlGaN was verified by correlation with photoluminescence and Raman measurements. The open-circuit potential measurements further confirmed the p-type conductivity, while Mott-Schottky experiments measured a hole concentration of 1.3 × 1019 cm-3. These results from photoelectrochemical measurements allow us to design prototype ultraviolet (UV) light-emitting diodes (LEDs) incorporating the AlGaN quantum-disks-in-nanowire and an optimized p-type AlGaN contact layer for UV-transparency. The ∼335 nm LEDs exhibited a low turn-on voltage of 5 V with a series resistance of 32 Ω, due to the efficient p-type doping of the AlGaN nanowires. The bias-dependent Raman measurements further revealed the negligible self-heating of devices. This study provides an attractive solution to evaluate the electrical properties of AlGaN, which is applicable to other wide bandgap nanostructures. Our results are expected to open doors to new applications for wide and ultra-wide bandgap materials.

High power ultraviolet light emitting diodes based on GaN /AlGaN quantum wells produced by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Cabalu, J. S.; Bhattacharyya, A.; Thomidis, C.; Friel, I.; Moustakas, T. D.; Collins, C. J.; Komninou, Ph.

2006-11-01

In this paper, we report on the growth by molecular beam epitaxy and fabrication of high power nitride-based ultraviolet light emitting diodes emitting in the spectral range between 340 and 350nm. The devices were grown on (0001) sapphire substrates via plasma-assisted molecular beam epitaxy. The growth of the light emitting diode (LED) structures was preceded by detailed materials studies of the bottom n-AlGaN contact layer, as well as the GaN /AlGaN multiple quantum well (MQW) active region. Specifically, kinetic conditions were identified for the growth of the thick n-AlGaN films to be both smooth and to have fewer defects at the surface. Transmission-electron microscopy studies on identical GaN /AlGaN MQWs showed good quality and well-defined interfaces between wells and barriers. Large area mesa devices (800×800μm2) were fabricated and were designed for backside light extraction. The LEDs were flip-chip bonded onto a Si submount for better heat sinking. For devices emitting at 340nm, the measured differential on-series resistance is 3Ω with electroluminescence spectrum full width at half maximum of 18nm. The output power under dc bias saturates at 0.5mW, while under pulsed operation it saturates at approximately 700mA to a value of 3mW, suggesting that thermal heating limits the efficiency of these devices. The output power of the investigated devices was found to be equivalent with those produced by the metal-organic chemical vapor deposition and hydride vapor-phase epitaxy methods. The devices emitting at 350nm were investigated under dc operation and the output power saturates at 4.5mW under 200mA drive current.

Inclined dislocation arrays in AlGaN/AlGaN quantum well structures emitting at 290 nm

NASA Astrophysics Data System (ADS)

Chang, T. Y.; Moram, M. A.; McAleese, C.; Kappers, M. J.; Humphreys, C. J.

2010-12-01

We report on the structural and optical properties of deep ultraviolet emitting AlGaN/AlGaN multiple quantum wells (MQWs) grown on (0001) sapphire by metal-organic vapor phase epitaxy using two different buffer layer structures, one containing a thin (1 μm) AlN layer combined with a GaN interlayer and the other a thick (4 μm) AlN layer. Transmission electron microscopy analysis of both structures showed inclined arrays of dislocations running through the AlGaN layers at an angle of ˜30°, originating at bunched steps at the AlN surface and terminating at bunched steps at the surface of the MQW structure. In all layers, these inclined dislocation arrays are surrounded by AlGaN with a relatively higher Ga content, consistent with plan-view cathodoluminescence maps in which the bunched surface steps are associated with longer emission wavelengths. The structure with the 4 μm-thick AlN buffer layer had a dislocation density lower by a factor of 2 (at (1.7±0.1)×109 cm-2) compared to the structure with the 1 μm thick AlN buffer layer, despite the presence of the inclined dislocation arrays.

Spectral response characteristics of the transmission-mode aluminum gallium nitride photocathode with varying aluminum composition.

PubMed

Hao, Guanghui; Liu, Junle; Ke, Senlin

2017-12-10

In order to research spectral response characteristics of transmission-mode nanostructure aluminum gallium nitride (AlGaN) photocathodes, the AlGaN photocathodes materials with varied aluminum (Al) composition were grown by metalorganic chemical vapor deposition (MOCVD) and its optical properties were measured. The Al compositions of each AlGaN film of the photocathodes were analyzed from their adsorption properties curves; their thickness was also calculated by the matrix formula of thin-film optics. The nanostructure AlGaN photocathodes were activated with the Caesium-Oxygen (Cs-O) alternation, and after the photocathode was packaged in vacuum, their spectrum responses were measured. The experimental results showed that the trend of spectrum response curves first increased and then decreased along with the increasing of the incident light wavelength. The peak spectrum response value was 17.5 mA/W at 255 nm, and its quantum efficiency was 8.5%. The lattice defects near the interface of the AlGaN heterostructure could impede the electron motion crossing this region and moving toward the photocathode surface; this was a factor that reduces the electron emission performance of the photocathodes. Also, the experimental result showed that the thickness of each AlGaN layer affected the electron diffusion characteristics; this was a key factor that influenced the spectrum response performance.

Measurement and simulation of top- and bottom-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors with high external quantum efficiencies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brendel, Moritz, E-mail: moritz.brendel@fbh-berlin.de; Helbling, Markus; Knigge, Andrea

2015-12-28

A comprehensive study on top- and bottom-illuminated Al{sub 0.5}Ga{sub 0.5}N/AlN metal-semiconductor-metal (MSM) photodetectors having different AlGaN absorber layer thickness is presented. The measured external quantum efficiency (EQE) shows pronounced threshold and saturation behavior as a function of applied bias voltage up to 50 V reaching about 50% for 0.1 μm and 67% for 0.5 μm thick absorber layers under bottom illumination. All experimental findings are in very good accordance with two-dimensional drift-diffusion modeling results. By taking into account macroscopic polarization effects in the hexagonal metal-polar +c-plane AlGaN/AlN heterostructures, new insights into the general device functionality of AlGaN-based MSM photodetectors are obtained. The observedmore » threshold/saturation behavior is caused by a bias-dependent extraction of photoexcited holes from the Al{sub 0.5}Ga{sub 0.5}N/AlN interface. While present under bottom illumination for any AlGaN layer thickness, under top illumination this mechanism influences the EQE-bias characteristics only for thin layers.« less

Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices

DOE PAGES

Kaplar, R. J.; Allerman, A. A.; Armstrong, A. M.; ...

2016-12-20

“Ultra” wide-bandgap semiconductors are an emerging class of materials with bandgaps greater than that of gallium nitride (EG > 3.4 eV) that may ultimately benefit a wide range of applications, including switching power conversion, pulsed power, RF electronics, UV optoelectronics, and quantum information. This paper describes the progress made to date at Sandia National Laboratories to develop one of these materials, aluminum gallium nitride, targeted toward high-power devices. The advantageous material properties of AlGaN are reviewed, questions concerning epitaxial growth and defect physics are covered, and the processing and performance of vertical- and lateral-geometry devices are described. The paper concludesmore » with an assessment of the outlook for AlGaN, including outstanding research opportunities and a brief discussion of other potential applications.« less

Heavy Mg-doping of (Al,Ga)N films for potential applications in deep ultraviolet light-emitting structures

NASA Astrophysics Data System (ADS)

Liang, Y. H.; Towe, E.

2018-03-01

Doping of high aluminum-containing (Al,Ga)N thin films has remained a challenging problem that has hindered progress in the development of deep ultraviolet light-emitters. This paper reports on the synthesis and use of heavily doped (Al,Ga)N films in deep ultraviolet (˜274 nm) light-emitting structures; these structures were synthesized by molecular beam epitaxy under liquid-metal growth conditions that facilitate the incorporation of extremely high density of Mg dopant impurities (up to 5 × 1019 cm-3) into aluminum-rich (Al,Ga)N thin films. Prototypical light-emitting diode structures incorporating Al0.7Ga0.3N films doped with Mg impurities that ionize to give free hole carrier concentrations of up to 6 × 1017 cm-3 exhibit external quantum efficiencies of up 0.56%; this is an improvement from previous devices made from molecular beam epitaxy-grown materials. This improvement is believed to be due to the high hole carrier concentration enabled by the relatively low activation energy of 220 meV compared to the expected values of 408-507 meV for Al0.7Ga0.3N films.

Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources

PubMed Central

Zhao, S.; Connie, A. T.; Dastjerdi, M. H. T.; Kong, X. H.; Wang, Q.; Djavid, M.; Sadaf, S.; Liu, X. D.; Shih, I.; Guo, H.; Mi, Z.

2015-01-01

Despite broad interest in aluminum gallium nitride (AlGaN) optoelectronic devices for deep ultraviolet (DUV) applications, the performance of conventional Al(Ga)N planar devices drastically decays when approaching the AlN end, including low internal quantum efficiencies (IQEs) and high device operation voltages. Here we show that these challenges can be addressed by utilizing nitrogen (N) polar Al(Ga)N nanowires grown directly on Si substrate. By carefully tuning the synthesis conditions, a record IQE of 80% can be realized with N-polar AlN nanowires, which is nearly ten times higher compared to high quality planar AlN. The first 210 nm emitting AlN nanowire light emitting diodes (LEDs) were achieved, with a turn on voltage of about 6 V, which is significantly lower than the commonly observed 20 – 40 V. This can be ascribed to both efficient Mg doping by controlling the nanowire growth rate and N-polarity induced internal electrical field that favors hole injection. In the end, high performance N-polar AlGaN nanowire LEDs with emission wavelengths covering the UV-B/C bands were also demonstrated. PMID:25684335

AlGaN Nanostructures with Extremely High Room-Temperature Internal Quantum Efficiency of Emission Below 300 nm

NASA Astrophysics Data System (ADS)

Toropov, A. A.; Shevchenko, E. A.; Shubina, T. V.; Jmerik, V. N.; Nechaev, D. V.; Evropeytsev, E. A.; Kaibyshev, V. Kh.; Pozina, G.; Rouvimov, S.; Ivanov, S. V.

2017-07-01

We present theoretical optimization of the design of a quantum well (QW) heterostructure based on AlGaN alloys, aimed at achievement of the maximum possible internal quantum efficiency of emission in the mid-ultraviolet spectral range below 300 nm at room temperature. A sample with optimized parameters was fabricated by plasma-assisted molecular beam epitaxy using the submonolayer digital alloying technique for QW formation. High-angle annular dark-field scanning transmission electron microscopy confirmed strong compositional disordering of the thus-fabricated QW, which presumably facilitates lateral localization of charge carriers in the QW plane. Stress evolution in the heterostructure was monitored in real time during growth using a multibeam optical stress sensor intended for measurements of substrate curvature. Time-resolved photoluminescence spectroscopy confirmed that radiative recombination in the fabricated sample dominated in the whole temperature range up to 300 K. This leads to record weak temperature-induced quenching of the QW emission intensity, which at 300 K does not exceed 20% of the low-temperature value.

A hole accelerator for InGaN/GaN light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ji, Yun; Wang, Liancheng; Zhu, Binbin; Zhang, Yiping; Lu, Shunpeng; Zhang, Xueliang; Hasanov, Namig; Sun, Xiao Wei; Demir, Hilmi Volkan

2014-10-01

The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low hole mobility makes the holes less energetic, which hinders the hole injection into the multiple quantum wells (MQWs) especially when a p-type AlGaN electron blocking layer (EBL) is adopted. In this work, we report a hole accelerator to accelerate the holes so that the holes can obtain adequate kinetic energy, travel across the p-type EBL, and then enter the MQWs more efficiently and smoothly. In addition to the numerical study, the effectiveness of the hole accelerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED.

Influence of template properties and quantum well number on stimulated emission from Al0.7Ga0.3N/Al0.8Ga0.2N quantum wells

NASA Astrophysics Data System (ADS)

Jeschke, J.; Martens, M.; Hagedorn, S.; Knauer, A.; Mogilatenko, A.; Wenzel, H.; Zeimer, U.; Enslin, J.; Wernicke, T.; Kneissl, M.; Weyers, M.

2018-03-01

AlGaN multiple quantum well laser heterostructures for emission around 240 nm have been grown by metalorganic vapor phase epitaxy on epitaxially laterally overgrown (ELO) AlN/sapphire templates. The edge emitting laser structures showed optically pumped lasing with threshold power densities in the range of 2 MW cm-2. The offcut angle of the sapphire substrates as well as the number and the width of the quantum wells were varied while keeping the total thickness of the gain region constant. A larger offcut angle of 0.2° leads to step bunching on the surface as well as Ga accumulation at the steps, but also to an increased inclination of threading dislocations and coalescence boundaries resulting in a reduced dislocation density and thus a reduced laser threshold in comparison to lasers grown on ELO with an offcut of 0.1°. For low losses, samples with fewer QWs exhibited a lower lasing threshold due to a reduced transparency pump power density while for high losses, caused by a higher threading dislocation density, the quadruple quantum well was favorable due to its higher maximum gain.

On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Zi-Hui; Ji, Yun; Liu, Wei

2014-02-17

In this work, the origin of electron blocking effect of n-type Al{sub 0.25}Ga{sub 0.75}N electron blocking layer (EBL) for c+ InGaN/GaN light-emitting diodes has been investigated through dual-wavelength emission method. It is found that the strong polarization induced electric field within the n-EBL reduces the thermal velocity and correspondingly the mean free path of the hot electrons. As a result, the electron capture efficiency of the multiple quantum wells is enhanced, which significantly reduces the electron overflow from the active region and increases the radiative recombination rate with holes.

A study of electrically active traps in AlGaN/GaN high electron mobility transistor

NASA Astrophysics Data System (ADS)

Yang, Jie; Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

2013-10-01

We have studied electron conduction mechanisms and the associated roles of the electrically active traps in the AlGaN layer of an AlGaN/GaN high electron mobility transistor structure. By fitting the temperature dependent I-V (Current-Voltage) curves to the Frenkel-Poole theory, we have identified two discrete trap energy levels. Multiple traces of I-V measurements and constant-current injection experiment all confirm that the main role of the traps in the AlGaN layer is to enhance the current flowing through the AlGaN barrier by trap-assisted electron conduction without causing electron trapping.

Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering.

PubMed

Zhang, Zi-Hui; Ju, Zhengang; Liu, Wei; Tan, Swee Tiam; Ji, Yun; Kyaw, Zabu; Zhang, Xueliang; Hasanov, Namig; Sun, Xiao Wei; Demir, Hilmi Volkan

2014-04-15

The p-type AlGaN electron blocking layer (EBL) is widely used in InGaN/GaN light-emitting diodes (LEDs) for electron overflow suppression. However, a typical EBL also reduces the hole injection efficiency, because holes have to climb over the energy barrier generated at the p-AlGaN/p-GaN interface before entering the quantum wells. In this work, to address this problem, we report the enhancement of hole injection efficiency by manipulating the hole transport mechanism through insertion of a thin GaN layer of 1 nm into the p-AlGaN EBL and propose an AlGaN/GaN/AlGaN-type EBL outperforming conventional AlGaN EBLs. Here, the position of the inserted thin GaN layer relative to the p-GaN region is found to be the key to enhancing the hole injection efficiency. InGaN/GaN LEDs with the proposed p-type AlGaN/GaN/AlGaN EBL have demonstrated substantially higher optical output power and external quantum efficiency.

Plasmonic based light manipulation and applications in AIGaN deep-UV devices (Conference Presentation)

NASA Astrophysics Data System (ADS)

Yin, Jun; Li, Jing; Kang, Junyong

2016-09-01

Recently, surface plasmon (SP)-exciton coupling has been wildly applied in nitride semiconductors in order to improve the spontaneous radiative recombination rate [1-3]. However, most works have been focused on the emission enhancement in InGaN-based blue or green light emitting diodes (LEDs). Practically, it is significantly important to improve the emission efficiency in deep-UV AlGaN-base quantum well (QW) structure due to its intrinsically low internal quantum efficiency (IQE) induced by the high defect density in its epitaxy layer [4]. But, the effective SP-exciton coupling with matched energy in deep-UV region is still a challenge issue due to the lack of appropriate metal structures and compatible fabrication techniques. In this work, the Al nanoparticles (NPs) were introduced by the nanosphere lithography (NSL) and deposition techniques into the AlGaN based MQWs with optimized size and structure. Due to the local surface plasmon (LSP) coupling with the excitons in QWs, emission enhancement in deep UV region has been achieved in the Al NPs decorated AlGaN MQWs structure with comparison to the bare MQWs. Theoretical calculations on the energy subbands of AlGaN QWs were further carried out to investigate the corresponding mechanisms, in which the hot carrier transition activated by SP-exciton coupling was believed to be mainly responsible for the enhancement. This work demonstrated a low cost, wafer scale fabrication process, which can be potentially employed to the practical SP-enhanced AlGaN-based deep UV LEDs with high IQEs.

Emission and material gain spectra of polar compressive strained AlGaN quantum wells grown on virtual AlGaN substrates: Tuning emission wavelength and mixing TE and TM mode of light polarization

NASA Astrophysics Data System (ADS)

Gladysiewicz, Marta; Rudzinski, Mariusz; Hommel, Detlef; Kudrawiec, Robert

2018-07-01

It is shown that compressively strained polar AlxGa1‑xN/AlyGa1‑yN quantum wells (QWs) of various contents grown on virtual AlYGa1‑YN substrates (Y = 20, 40, 60, 80, and 100%) are able to cover the whole UV-A, -B, and -C spectral range but their contents and widths have to be carefully optimized if they are to be used as the active region of light emitting diodes and laser diodes. The emission wavelength from AlGaN multi QWs can be tuned by both the QW width and barrier thickness, but the range of QW width for which an efficient luminescence is expected is very small (2–4 nm) due to a very weak electron-hole overlap for wider QWs. The most effective method for wavelength tuning in this QW system is content engineering, i.e., lowering Al concentration in the QW region. The decrease of Al concentration in the QW shifts the emission peak to red, broadens this peak, weakens its intensity, and changes its polarization from transverse magnetic (TM) to TM mixed with transverse electric (TE). For laser diodes the optimal QW design is more rigorous concerning the QW width since this width should be below 3 nm. Moreover it is shown that the TE and TM mode of materials gain overlap and are strongly blueshifted in comparison to emission spectrum.

Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ngo, Thi Huong; Gil, Bernard; Valvin, Pierre

2015-09-21

We determine the internal quantum efficiency of strain-balanced AlGaN-InGaN-GaN hetero-structures designed for yellow-amber light emission, by using a recent model based on the kinetics of the photoluminescence decay initiated by Iwata et al. [J. Appl. Phys. 117, 075701 (2015)]. Our results indicate that low temperature internal quantum efficiencies sit in the 50% range and we measure that adding an AlGaN layer increases the internal quantum efficiency from 50% up to 57% with respect to the GaN-InGaN case. More dramatic, it almost doubles from 2.5% up to 4.3% at room temperature.

Enhancing the performance of blue GaN-based light emitting diodes with double electron blocking layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Yao; Liang, Meng; Fu, Jiajia

2015-03-15

In this work, novel double Electron Blocking Layers for InGaN/GaN multiple quantum wells light-emitting diodes were proposed to mitigate the efficiency droop at high current density. The band diagram and carriers distributions were investigated numerically. The results indicate that due to a newly formed holes stack in the p-GaN near the active region, the hole injection has been improved and an uniform carriers distribution can be achieved. As a result, in our new structure with double Electron Blocking Layers, the efficiency droop has been reduced to 15.5 % in comparison with 57.3 % for the LED with AlGaN EBL atmore » the current density of 100 A/cm{sup 2}.« less

Influence of dislocation density on internal quantum efficiency of GaN-based semiconductors

NASA Astrophysics Data System (ADS)

Yu, Jiadong; Hao, Zhibiao; Li, Linsen; Wang, Lai; Luo, Yi; Wang, Jian; Sun, Changzheng; Han, Yanjun; Xiong, Bing; Li, Hongtao

2017-03-01

By considering the effects of stress fields coming from lattice distortion as well as charge fields coming from line charges at edge dislocation cores on radiative recombination of exciton, a model of carriers' radiative and non-radiative recombination has been established in GaN-based semiconductors with certain dislocation density. Using vector average of the stress fields and the charge fields, the relationship between dislocation density and the internal quantum efficiency (IQE) is deduced. Combined with related experimental results, this relationship is fitted well to the trend of IQEs of bulk GaN changing with screw and edge dislocation density, meanwhile its simplified form is fitted well to the IQEs of AlGaN multiple quantum well LEDs with varied threading dislocation densities but the same light emission wavelength. It is believed that this model, suitable for different epitaxy platforms such as MOCVD and MBE, can be used to predict to what extent the luminous efficiency of GaN-based semiconductors can still maintain when the dislocation density increases, so as to provide a reasonable rule of thumb for optimizing the epitaxial growth of GaN-based devices.

Ultrahigh-Speed Electrically Injected 1.55 micrometer Quantum Dot Microtube and Nanowire Lasers on Si

DTIC Science & Technology

2015-08-30

Ultrahigh-Speed Electrically Injected 1.55 um Quantum Dot Microtube and Nanowire Lasers on Si In this report, we describe the progress made in rolled...up InP-based tube lasers and in the growth and characterization of III-nitride nanowire structures on Si. We report on the demonstration of...injected AlGaN nanowire lasers that can operate in the UV-AII (315-340 nm), UV-B (280-315nm), and UV-C (200-280 nm). The views, opinions and/or findings

Variation of the external quantum efficiency with temperature and current density in red, blue, and deep ultraviolet light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Jun Hyuk; Lee, Jong Won; Kim, Dong Yeong

The temperature-dependent external quantum efficiencies (EQEs) were investigated for a 620 nm AlGaInP red light-emitting diodes (LEDs), a 450 nm GaInN blue LED, and a 285 nm AlGaN deep-ultraviolet (DUV) LED. We observed distinct differences in the variation of the EQE with temperature and current density for the three types of LEDs. Whereas the EQE of the AlGaInP red LED increases as temperature decreases below room temperature, the EQEs of GaInN blue and AlGaN DUV LEDs decrease for the same change in temperature in a low-current density regime. The free carrier concentration, as determined from the dopant ionization energy, shows a strong material-system-specificmore » dependence, leading to different degrees of asymmetry in carrier concentration for the three types of LEDs. We attribute the EQE variation of the red, blue, and DUV LEDs to the different degrees of asymmetry in carrier concentration, which can be exacerbated at cryogenic temperatures. As for the EQE variation with temperature in a high-current density regime, the efficiency droop for the AlGaInP red and GaInN blue LEDs becomes more apparent as temperature decreases, due to the deterioration of the asymmetry in carrier concentration. However, the EQE of the AlGaN DUV LED initially decreases, then reaches an EQE minimum point, and then increases again due to the field-ionization of acceptors by the Poole-Frenkel effect. The results elucidate that carrier transport phenomena allow for the understanding of the droop phenomenon across different material systems, temperatures, and current densities.« less

229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection

NASA Astrophysics Data System (ADS)

Liu, Dong; Cho, Sang June; Park, Jeongpil; Seo, Jung-Hun; Dalmau, Rafael; Zhao, Deyin; Kim, Kwangeun; Gong, Jiarui; Kim, Munho; Lee, In-Kyu; Albrecht, John D.; Zhou, Weidong; Moody, Baxter; Ma, Zhenqiang

2018-02-01

AlGaN based 229 nm light emitting diodes (LEDs), employing p-type Si to significantly increase hole injection, were fabricated on single crystal bulk aluminum nitride (AlN) substrates. Nitride heterostructures were epitaxially deposited by organometallic vapor phase epitaxy and inherit the low dislocation density of the native substrate. Following epitaxy, a p-Si layer is bonded to the heterostructure. LEDs were characterized both electrically and optically. Owing to the low defect density films, large concentration of holes from p-Si, and efficient hole injection, no efficiency droop was observed up to a current density of 76 A/cm2 under continuous wave operation and without external thermal management. An optical output power of 160 μW was obtained with the corresponding external quantum efficiency of 0.03%. This study demonstrates that by adopting p-type Si nanomembrane contacts as a hole injector, practical levels of hole injection can be realized in UV light-emitting diodes with very high Al composition AlGaN quantum wells, enabling emission wavelengths and power levels that were previously inaccessible using traditional p-i-n structures with poor hole injection efficiency.

The Development of Ultraviolet Light Emitting Diodes on p-SiC Substrates

NASA Astrophysics Data System (ADS)

Brummer, Gordon

Ultraviolet (UV) light emitting diodes (LEDs) are promising light sources for purification, phototherapy, and resin curing applications. Currently, commercial UV LEDs are composed of AlGaN-based n-i-p junctions grown on sapphire substrates. These devices suffer from defects in the active region, inefficient p-type doping, and poor light extraction efficiency. This dissertation addresses the development of a novel UV LED device structure, grown on p-SiC substrates. In this device structure, the AlGaN-based intrinsic (i) and n-layers are grown directly on the p-type substrate, forming a p-i-n junction. The intrinsic layer (active region) is composed of an AlN buffer layer followed by three AlN/Al0.30Ga0.70N quantum wells. After the intrinsic layer, the n-layer is formed from n-type AlGaN. This device architecture addresses the deficiencies of UV LEDs on sapphire substrates while providing a vertical device geometry, reduced fabrication complexity, and improved thermal management. The device layers were grown by molecular beam epitaxy (MBE). The material properties were optimized by considering varying growth conditions and by considering the role of the layer within the device. AlN grown at 825 C and with a Ga surfactant yielded material with screw dislocation density of 1x10 7 cm-2 based on X-ray diffraction (XRD) analysis. AlGaN alloys grown in this work contained compositional inhomogeneity, as verified by high-resolution XRD, photoluminescence, and absorption measurements. Based on Stokes shift measurements, the degree of compositional inhomogeneity was correlated with the amount of excess Ga employed during growth. Compositional inhomogeneity yields carrier localizing potential fluctuations, which are advantages in light emitting device layers. Therefore, excess Ga growth conditions were used to grow AlN/Al0.30Ga0.70N quantum wells (designed using a wurtzite k.p model) with 35% internal quantum efficiency. Potential fluctuations limit the mobility of carriers and introduce sub-bandgap absorption, making them undesirable in the n-AlGaN layers. n-Al0.60Ga 0.40N grown under stoichiometric Ga flux and an In surfactant reduced the Stokes shift (compared to n-AlGaN grown without In) by 150 meV. However, even under these growth modes, some compositional inhomogeneity persisted which is speculatively attributed to the vicinal substrate. Device epitaxial layer stacks utilizing the optimum growth conditions were fabricated into prototype vertical UV LEDs which emit from 295-320 nm. In order to increase light extraction efficiency, UV distributed Bragg reflectors (DBRs) based on compositionally graded AlGaN alloys were designed using the transfer matrix method (TMM) and grown by MBE. DBRs were formed from repeated compositionally graded AlGaN alloys. This structure utilized the polarization doping and index of refraction variation of graded composition AlGaN. DBRs with square wave, sinusoidal, triangular, and sawtooth compositional profiles were realized, with reflectivity peaks over 50%, centered at 280 nm.

Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

NASA Astrophysics Data System (ADS)

Malinverni, M.; Lamy, J.-M.; Martin, D.; Feltin, E.; Dorsaz, J.; Castiglia, A.; Rossetti, M.; Duelk, M.; Vélez, C.; Grandjean, N.

2014-12-01

We demonstrate state-of-the-art p-type (Al)GaN layers deposited at low temperature (740 °C) by ammonia molecular beam epitaxy (NH3-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGaN quantum well active region. Typical p-type GaN resistivities and contact resistances are 0.4 Ω cm and 5 × 10-4 Ω cm2, respectively. As a test bed, we fabricated a hybrid laser structure emitting at 400 nm combining n-type AlGaN cladding and InGaN active region grown by metal-organic vapor phase epitaxy, with the p-doped waveguide and cladding layers grown by NH3-MBE. Single-mode ridge-waveguide LD exhibits a threshold voltage as low as 4.3 V for an 800 × 2 μm2 ridge dimension and a threshold current density of ˜5 kA cm-2 in continuous wave operation. The series resistance of the device is 6 Ω and the resistivity is 1.5 Ω cm, confirming thereby the excellent electrical properties of p-type Al0.06Ga0.94N:Mg despite the low growth temperature.

Broadband biphoton generation and statistics of quantum light in the UV-visible range in an AlGaN microring resonator.

PubMed

De Leonardis, Francesco; Soref, Richard A; Soltani, Mohammad; Passaro, Vittorio M N

2017-09-12

We present a physical investigation on the generation of correlated photon pairs that are broadly spaced in the ultraviolet (UV) and visible spectrum on a AlGaN/AlN integrated photonic platform which is optically transparent at these wavelengths. Using spontaneous four wave mixing (SFWM) in an AlGaN microring resonator, we show design techniques to satisfy the phase matching condition between the optical pump, the signal, and idler photon pairs, a condition which is essential and is a key hurdle when operating at short wavelength due to the strong normal dispersion of the material. Such UV-visible photon pairs are quite beneficial for interaction with qubit ions that are mostly in this wavelength range, and will enable heralding the photon-ion interaction. As a target application example, we present the systematic AlGaN microresonator design for generating signal and idler photon pairs using a blue wavelength pump, while the signal appears at the transition of ytterbium ion ( 171 Yb + , 369.5 nm) and the idler appears in the far blue or green range. The photon pairs have minimal crosstalk to the pump power due to their broad spacing in spectral wavelength, thereby relaxing the design of on-chip integrated filters for separating pump, signal and idler.

Aluminum gallium nitride-cladding-free nonpolar m-plane gallium nitride-based laser diodes

NASA Astrophysics Data System (ADS)

Schmidt, Mathew Corey

The recent demonstration of nonpolar GaN laser diode operation along with rapid device improvements signal a paradigm shift in GaN-based optoelectronic technology. Up until now, GaN optoelectronics have been trapped on the c-plane facet, where built-in polarization fields place limitations on device design and performance. The advent of bulk GaN substrates has allowed for the full exploration of not only the nonpolar m-plane facet, but all crystal orientations of GaN. This dissertation focuses on the development of some of the world's first nonpolar m-plane GaN laser diodes as well as on the AlGaN-cladding-free concept invented at UCSB. The absence of built-in electric fields allows for thicker quantum wells (≥8 nm) than those allowed on c-plane which improves the optical waveguiding characteristics and eliminates the need for AlGaN cladding layers. The benefits of this design include more uniform growth, more reproducible growth, no tensile cracking, lower operating voltages and currents, and higher yields. The first iteration of device design optimization is presented. Design and growth aspects investigated include quantum well number, quantum well thickness, Mg doping of the p-GaN cladding, aluminum composition of the AlGaN cladding layer and the implementation of an InGaN separate confined heterostructure. These optimizations led to threshold current densities as low as 2.4 kA/cm2.

Comparative research on the influence of varied Al component on the active layer of AlGaN photocathode

NASA Astrophysics Data System (ADS)

He, Minyou; Chen, Liang; Su, Lingai; Yin, Lin; Qian, Yunsheng

2017-06-01

To theoretically research the influence of a varied Al component on the active layer of AlGaN photocathodes, the first principle based on density functional theory is used to calculate the formation energy and band structure of Al x Ga1-x N with x at 0, 0.125, 0.25, 0.325, and 0.5. The calculation results show that the formation energy declines along with the Al component rise, while the band gap is increasing with Al component increasing. Al x Ga1-x N with x at 0, 0.125, 0.25, 0.325, and 0.5 are direct band gap semiconductors, and their absorption coefficient curves have the same variation tendency. For further study, we designed two kinds of reflection-mode AlGaN photocathode samples. Sample 1 has an Al x Ga1-x N active layer with varied Al component ranging from 0.5 to 0 and decreasing from the bulk to the surface, while sample 2 has an Al x Ga1-x N active layer with the fixed Al component of 0.25. Using the multi-information measurement system, we measured the spectral response of the activated samples at room temperature. Their photocathode parameters were obtained by fitting quantum efficiency curves. Results show that sample 1 has a better spectral response than sample 2 at the range of short-wavelength. This work provides a reference for the structure design of the AlGaN photocathode. Project supported by the National Natural Science Foundation of China (Nos. 61308089, 6144005) and the Public Technology Applied Research Project of Zhejiang Province (No. 2013C31068).

Compositional inhomogeneities in AlGaN thin films grown by molecular beam epitaxy: Effect on MSM UV photodetectors

NASA Astrophysics Data System (ADS)

Pramanik, Pallabi; Sen, Sayantani; Singha, Chirantan; Roy, Abhra Shankar; Das, Alakananda; Sen, Susanta; Bhattacharyya, A.

2016-10-01

Ultraviolet (UV) MSM photodetectors (PD) based on AlGaN alloys find many applications, including flame sensing. In this work we investigate the dependence of AlGaN based photodetectors grown by MBE on the kinetics of growth. MSM photodetectors were fabricated in the interdigitated configuration with Ni/Au contacts having 400 μm finger length and 10 μm finger spacing. Bulk Al0.4Ga0.6N films were grown on to sapphire substrates using an AlN buffer layer. A series of PDs were developed using the Al0.4Ga0.6N films grown under different group III/V flux ratios ranging from stoichiometric conditions to much higher than unity. Upon testing, it was observed that the otherwise identical photodetectors show significant decrease in dark current as AlGaN deposition conditions change from stoichiometric to excess group III, due to reduction of unintentional incorporation of oxygen-related point defects. In addition, the intensity and spectral dependence of the photocurrent also change, showing an extended low energy tail for the former and a sharp and prominent excitonic peak for the latter. The optical transmission measurements indicate a variation in Urbach energy with deposition conditions of the AlGaN films, although they have the same absorption edge. While all samples show a single red-shifted photoluminescence peak at room temperature, upon cooling, multiple higher energy peaks appear in the photoluminescence (PL) spectra, indicating that the alloys contain complex compositional inhomogeneities. Two types of alloy fluctuations, determined by the growth conditions, have been identified that modulate the optoelectronic properties of AlGaN by changing the spatial localization of excitons, thereby altering their stability. We identified that growth under stoichiometric conditions leads to compositional inhomogeneities that play a detrimental role in the operation of MSM photodetectors, which reduces the sharpness of the sensitivity edge, while growth under excess metal conditions enhances it.

Methods for improved growth of group III nitride buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphologymore » of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).« less

Hybrid UV Imager Containing Face-Up AlGaN/GaN Photodiodes

NASA Technical Reports Server (NTRS)

Zheng, Xinyu; Pain, Bedabrata

2005-01-01

A proposed hybrid ultraviolet (UV) image sensor would comprise a planar membrane array of face-up AlGaN/GaN photodiodes integrated with a complementary metal oxide/semiconductor (CMOS) readout-circuit chip. Each pixel in the hybrid image sensor would contain a UV photodiode on the AlGaN/GaN membrane, metal oxide/semiconductor field-effect transistor (MOSFET) readout circuitry on the CMOS chip underneath the photodiode, and a metal via connection between the photodiode and the readout circuitry (see figure). The proposed sensor design would offer all the advantages of comparable prior CMOS active-pixel sensors and AlGaN UV detectors while overcoming some of the limitations of prior (AlGaN/sapphire)/CMOS hybrid image sensors that have been designed and fabricated according to the methodology of flip-chip integration. AlGaN is a nearly ideal UV-detector material because its bandgap is wide and adjustable and it offers the potential to attain extremely low dark current. Integration of AlGaN with CMOS is necessary because at present there are no practical means of realizing readout circuitry in the AlGaN/GaN material system, whereas the means of realizing readout circuitry in CMOS are well established. In one variant of the flip-chip approach to integration, an AlGaN chip on a sapphire substrate is inverted (flipped) and then bump-bonded to a CMOS readout circuit chip; this variant results in poor quantum efficiency. In another variant of the flip-chip approach, an AlGaN chip on a crystalline AlN substrate would be bonded to a CMOS readout circuit chip; this variant is expected to result in narrow spectral response, which would be undesirable in many applications. Two other major disadvantages of flip-chip integration are large pixel size (a consequence of the need to devote sufficient area to each bump bond) and severe restriction on the photodetector structure. The membrane array of AlGaN/GaN photodiodes and the CMOS readout circuit for the proposed image sensor would be fabricated separately.

A normally-off fully AlGaN HEMT with high breakdown voltage and figure of merit for power switch applications

NASA Astrophysics Data System (ADS)

Ebrahimi, Behzad; Asad, Mohsen

2015-07-01

In this paper, we propose a fully AlGaN high electron mobility (HEMT) in which the gate electrode, the barrier and the channel are all AlGaN. The p-type AlGaN gate facilitates the normally-off operation to be compatible with the state-of-the-art power amplifiers. In addition, the AlGaN channel increases the breakdown voltage (VBR) to 598 V due to the higher breakdown field of AlGaN compared to GaN. To assess the efficiency of the proposed structure, its characteristics are compared with the conventional and recently proposed structures. The two-dimensional device simulation results show that the proposed structure has the highest threshold voltage (Vth) and the VBR with the moderately low ON-resistance (RON). These features lead to the highest figure of merit (2.49 × 1012) among the structures which is 83%, 59%, 47% and 49% more than those of the conventional, with a field plate, AlGaN gate and AlGaN channel structures, respectively.

Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Malinverni, M., E-mail: marco.malinverni@epfl.ch; Lamy, J.-M.; Martin, D.

2014-12-15

We demonstrate state-of-the-art p-type (Al)GaN layers deposited at low temperature (740 °C) by ammonia molecular beam epitaxy (NH{sub 3}-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGaN quantum well active region. Typical p-type GaN resistivities and contact resistances are 0.4 Ω cm and 5 × 10{sup −4} Ω cm{sup 2}, respectively. As a test bed, we fabricated a hybrid laser structure emitting at 400 nm combining n-type AlGaN cladding and InGaN active region grown by metal-organic vapor phase epitaxy, with the p-doped waveguide and cladding layers grown by NH{sub 3}-MBE. Single-mode ridge-waveguide LD exhibitsmore » a threshold voltage as low as 4.3 V for an 800 × 2 μm{sup 2} ridge dimension and a threshold current density of ∼5 kA cm{sup −2} in continuous wave operation. The series resistance of the device is 6 Ω and the resistivity is 1.5 Ω cm, confirming thereby the excellent electrical properties of p-type Al{sub 0.06}Ga{sub 0.94}N:Mg despite the low growth temperature.« less

Flexible deep-ultraviolet light-emitting diodes for significant improvement of quantum efficiencies by external bending

NASA Astrophysics Data System (ADS)

Shervin, Shahab; Oh, Seung Kyu; Park, Hyun Jung; Lee, Keon-Hwa; Asadirad, Mojtaba; Kim, Seung-Hwan; Kim, Jeomoh; Pouladi, Sara; Lee, Sung-Nam; Li, Xiaohang; Kwak, Joon Seop; Ryou, Jae-Hyun

2018-03-01

We report a new route to improve quantum efficiencies of AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) using mechanical flexibility of recently developed bendable thin-film structures. Numerical studies show that electronic band structures of AlGaN heterostructures and resulting optical and electrical characteristics of the devices can be significantly modified by external bending through active control of piezoelectric polarization. Internal quantum efficiency is enhanced higher than three times, when the DUV LEDs are moderately bent with concave curvatures. Furthermore, an efficiency droop at high injection currents is mitigated and turn-on voltage of diodes decreases with the same bending condition. The concept of bendable DUV LEDs with a controlled external strain can provide a new path for high-output-power and high-efficiency devices.

A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN

NASA Astrophysics Data System (ADS)

Haidet, Brian B.; Bryan, Isaac; Reddy, Pramod; Bryan, Zachary; Collazo, Ramón; Sitar, Zlatko

2015-06-01

Ohmic contacts to AlGaN grown on sapphire substrates have been previously demonstrated for various compositions of AlGaN, but contacts to AlGaN grown on native AlN substrates are more difficult to obtain. In this paper, a model is developed that describes current flow through contacts to Si-doped AlGaN. This model treats the current through reverse-biased Schottky barriers as a consequence of two different tunneling-dependent conduction mechanisms in parallel, i.e., Fowler-Nordheim emission and defect-assisted Frenkel-Poole emission. At low bias, the defect-assisted tunneling dominates, but as the potential across the depletion region increases, tunneling begins to occur without the assistance of defects, and the Fowler-Nordheim emission becomes the dominant conduction mechanism. Transfer length method measurements and temperature-dependent current-voltage (I-V) measurements of Ti/Al-based contacts to Si-doped AlGaN grown on sapphire and AlN substrates support this model. Defect-assisted tunneling plays a much larger role in the contacts to AlGaN on sapphire, resulting in nearly linear I-V characteristics. In contrast, contacts to AlGaN on AlN show limited defect-assisted tunneling appear to be only semi-Ohmic.

Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bajaj, Sanyam, E-mail: bajaj.10@osu.edu; Hung, Ting-Hsiang; Akyol, Fatih

2014-12-29

We report on the potential of high electron mobility transistors (HEMTs) consisting of high composition AlGaN channel and barrier layers for power switching applications. Detailed two-dimensional (2D) simulations show that threshold voltages in excess of 3 V can be achieved through the use of AlGaN channel layers. We also calculate the 2D electron gas mobility in AlGaN channel HEMTs and evaluate their power figures of merit as a function of device operating temperature and Al mole fraction in the channel. Our models show that power switching transistors with AlGaN channels would have comparable on-resistance to GaN-channel based transistors for the samemore » operation voltage. The modeling in this paper shows the potential of high composition AlGaN as a channel material for future high threshold enhancement mode transistors.« less

Low temperature laser molecular beam epitaxy and characterization of AlGaN epitaxial layers

NASA Astrophysics Data System (ADS)

Tyagi, Prashant; Ch., Ramesh; Kushvaha, S. S.; Kumar, M. Senthil

2017-05-01

We have grown AlGaN (0001) epitaxial layers on sapphire (0001) by using laser molecular beam epitaxy (LMBE) technique. The growth was carried out using laser ablation of AlxGa1-x liquid metal alloy under r.f. nitrogen plasma ambient. Before epilayer growth, the sapphire nitradation was performed at 700 °C using r.f nitrogen plasma followed by AlGaN layer growth. The in-situ reflection high energy electron diffraction (RHEED) was employed to monitor the substrate nitridation and AlGaN epitaxial growth. High resolution x-ray diffraction showed wurtzite hexagonal growth of AlGaN layer along c-axis. An absorption bandgap of 3.97 eV is obtained for the grown AlGaN layer indicating an Al composition of more than 20 %. Using ellipsometry, a refractive index (n) value of about 2.19 is obtained in the visible region.

Hybrid AlGaN-SiC Avalanche Photodiode for Deep-UV Photon Detection

NASA Technical Reports Server (NTRS)

Aslam, Shahid; Herrero, Federico A.; Sigwarth, John; Goldsman, Neil; Akturk, Akin

2010-01-01

The proposed device is capable of counting ultraviolet (UV) photons, is compatible for inclusion into space instruments, and has applications as deep- UV detectors for calibration systems, curing systems, and crack detection. The device is based on a Separate Absorption and Charge Multiplication (SACM) structure. It is based on aluminum gallium nitride (AlGaN) absorber on a silicon carbide APD (avalanche photodiode). The AlGaN layer absorbs incident UV photons and injects photogenerated carriers into an underlying SiC APD that is operated in Geiger mode and provides current multiplication via avalanche breakdown. The solid-state detector is capable of sensing 100-to-365-nanometer wavelength radiation at a flux level as low as 6 photons/pixel/s. Advantages include, visible-light blindness, operation in harsh environments (e.g., high temperatures), deep-UV detection response, high gain, and Geiger mode operation at low voltage. Furthermore, the device can also be designed in array formats, e.g., linear arrays or 2D arrays (micropixels inside a superpixel).

Electron mobility enhancement in metalorganic-vapor-phase-epitaxy-grown InAlN high-electron-mobility transistors by control of surface morphology of spacer layer

NASA Astrophysics Data System (ADS)

Yamada, Atsushi; Ishiguro, Tetsuro; Kotani, Junji; Nakamura, Norikazu

2018-01-01

We demonstrated low-sheet-resistance metalorganic-vapor-phase-epitaxy-grown InAlN high-electron-mobility transistors using AlGaN spacers with excellent surface morphology. We systematically investigated the effects of AlGaN spacer growth conditions on surface morphology and electron mobility. We found that the surface morphology of InAlN barriers depends on that of AlGaN spacers. Ga desorption from AlGaN spacers was suppressed by increasing the trimethylaluminum (TMA) supply rate, resulting in the small surface roughnesses of InAlN barriers and AlGaN spacers. Moreover, we found that an increase in the NH3 supply rate also improved the surface morphologies of InAlN barriers and AlGaN spacers as long as the TMA supply rate was high enough to suppress the degradation of GaN channels. Finally, we realized a low sheet resistance of 185.5 Ω/sq with a high electron mobility of 1210 cm2 V-1 s-1 by improving the surface morphologies of AlGaN spacers and InAlN barriers.

Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz.

PubMed

Moustakas, Theodore D; Paiella, Roberto

2017-10-01

This paper reviews the device physics and technology of optoelectronic devices based on semiconductors of the GaN family, operating in the spectral regions from deep UV to Terahertz. Such devices include LEDs, lasers, detectors, electroabsorption modulators and devices based on intersubband transitions in AlGaN quantum wells (QWs). After a brief history of the development of the field, we describe how the unique crystal structure, chemical bonding, and resulting spontaneous and piezoelectric polarizations in heterostructures affect the design, fabrication and performance of devices based on these materials. The heteroepitaxial growth and the formation and role of extended defects are addressed. The role of the chemical bonding in the formation of metallic contacts to this class of materials is also addressed. A detailed discussion is then presented on potential origins of the high performance of blue LEDs and poorer performance of green LEDs (green gap), as well as of the efficiency reduction of both blue and green LEDs at high injection current (efficiency droop). The relatively poor performance of deep-UV LEDs based on AlGaN alloys and methods to address the materials issues responsible are similarly addressed. Other devices whose state-of-the-art performance and materials-related issues are reviewed include violet-blue lasers, 'visible blind' and 'solar blind' detectors based on photoconductive and photovoltaic designs, and electroabsorption modulators based on bulk GaN or GaN/AlGaN QWs. Finally, we describe the basic physics of intersubband transitions in AlGaN QWs, and their applications to near-infrared and terahertz devices.

Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz

NASA Astrophysics Data System (ADS)

Moustakas, Theodore D.; Paiella, Roberto

2017-10-01

This paper reviews the device physics and technology of optoelectronic devices based on semiconductors of the GaN family, operating in the spectral regions from deep UV to Terahertz. Such devices include LEDs, lasers, detectors, electroabsorption modulators and devices based on intersubband transitions in AlGaN quantum wells (QWs). After a brief history of the development of the field, we describe how the unique crystal structure, chemical bonding, and resulting spontaneous and piezoelectric polarizations in heterostructures affect the design, fabrication and performance of devices based on these materials. The heteroepitaxial growth and the formation and role of extended defects are addressed. The role of the chemical bonding in the formation of metallic contacts to this class of materials is also addressed. A detailed discussion is then presented on potential origins of the high performance of blue LEDs and poorer performance of green LEDs (green gap), as well as of the efficiency reduction of both blue and green LEDs at high injection current (efficiency droop). The relatively poor performance of deep-UV LEDs based on AlGaN alloys and methods to address the materials issues responsible are similarly addressed. Other devices whose state-of-the-art performance and materials-related issues are reviewed include violet-blue lasers, ‘visible blind’ and ‘solar blind’ detectors based on photoconductive and photovoltaic designs, and electroabsorption modulators based on bulk GaN or GaN/AlGaN QWs. Finally, we describe the basic physics of intersubband transitions in AlGaN QWs, and their applications to near-infrared and terahertz devices.

Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice

NASA Astrophysics Data System (ADS)

Wang, Xiao; Wang, Wei; Wang, Jingli; Wu, Hao; Liu, Chang

2017-03-01

P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)5/(GaN)1 superlattice (SL) in Al0.83Ga0.17N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as MgGa δ doped AlGaN SLs. Mg acceptor activation energy was significantly reduced from 0.378 to 0.331 eV by using MgGa δ doping in SLs instead of traditional doping in alloys. This new process was confirmed to be able to realize high p-type doping in high Al-content AlGaN.

Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice.

PubMed

Wang, Xiao; Wang, Wei; Wang, Jingli; Wu, Hao; Liu, Chang

2017-03-14

P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN) 5 /(GaN) 1 superlattice (SL) in Al 0.83 Ga 0.17 N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as Mg Ga δ doped AlGaN SLs. Mg acceptor activation energy was significantly reduced from 0.378 to 0.331 eV by using Mg Ga δ doping in SLs instead of traditional doping in alloys. This new process was confirmed to be able to realize high p-type doping in high Al-content AlGaN.

Status of backthinned AlGaN based focal plane arrays for deep-UV imaging

NASA Astrophysics Data System (ADS)

Reverchon, J.-L.; Lehoucq, G.; Truffer, J.-P.; Costard, E.; Frayssinet, E.; Semond, F.; Duboz, J.-Y.; Giuliani, A.; Réfrégiers, M.; Idir, M.

2017-11-01

The achievement of deep ultraviolet (UV) focal plane arrays (FPA) is required for both solar physics [1] and micro electronics industry. The success of solar mission (SOHO, STEREO [2], SDO [3]…), has shown the accuracy of imaging at wavelengths from 10 nm to 140 nm to reveal effects occurring in the sun corona. Deep UV steppers at 13 nm are another demanding imaging technology for the microelectronic industry in terms of uniformity and stability. A third application concerns beam shaping of Synchrotron lines [4]. Consequently, such wavelengths are of prime importance whereas the vacuum UV wavelengths are very difficult to detect due to the dramatic interaction of light with materials. The fast development of nitrides has given the opportunity to investigate AlGaN as a material for UV detection. Camera based on AlGaN present an intrinsic spectral selectivity and an extremely low dark current at room temperature. We have previously presented several FPA dedicated to deep UV based on 320 x 256 pixels of Schottky photodiodes with a pitch of 30 μm [4, 5]. AlGaN is grown on a silicon substrate instead of sapphire substrate only transparent down to 200 nm. After a flip-chip hybridization, silicon substrate and AlGaN basal layer was removed by dry etching. Then, the spectral responsivity of the FPA presented a quantum efficiency (QE) from 5% to 20% from 50 nm to 290 nm when removing the highly doped contact layer via a selective wet etching. This FPA suffered from a low uniformity incompatible with imaging, and a long time response due to variations of conductivity in the honeycomb. We also observed a low rejection of visible. It is probably due to the same honeycomb conductivity enhancement for wavelength shorter than 360 nm, i.e., the band gap of GaN. We will show hereafter an improved uniformity due to the use of a precisely ICP (Inductively Coupled Plasma) controlled process. The final membrane thickness is limited to the desertion layer. Neither access resistance limitation nor long response time are observed. QE varies from 5% at 50 nm to 15% at 6 nm (85% more when taking into account the filling factor). Consequently, we can propose prototypes concerning not only "solar blind" camera optimized for narrow band in the near UV range (between 280 nm and 260 nm), but also devices with spectral range extended in the deep UV (290 nm to 10 nm). Both detectors are available for an optical budget evaluation.

p -n Junction Rectifying Characteristics of Purely n -Type GaN-Based Structures

NASA Astrophysics Data System (ADS)

Zuo, P.; Jiang, Y.; Ma, Z. G.; Wang, L.; Zhao, B.; Li, Y. F.; Yue, G.; Wu, H. Y.; Yan, H. J.; Jia, H. Q.; Wang, W. X.; Zhou, J. M.; Sun, Q.; Liu, W. M.; Ji, An-Chun; Chen, H.

2017-08-01

The GaN-based p -n junction rectifications are important in the development of high-power electronics. Here, we demonstrate that p -n junction rectifying characteristics can be realized with pure n -type structures by inserting an (In,Ga)N quantum well into the GaN /(Al ,Ga )N /GaN double heterostructures. Unlike the usual barriers, the insertion of an (In,Ga)N quantum well, which has an opposite polarization field to that of the (Al,Ga)N barrier, tailors significantly the energy bands of the system. The lifted energy level of the GaN spacer and the formation of the (In ,Ga )N /GaN interface barrier can improve the reverse threshold voltage and reduce the forward threshold voltage simultaneously, forming the p -n junction rectifying characteristics.

Lattice-matched double dip-shaped BAlGaN/AlN quantum well structures for ultraviolet light emission devices

NASA Astrophysics Data System (ADS)

Park, Seoung-Hwan; Ahn, Doyeol

2018-05-01

Ultraviolet light emission characteristics of lattice-matched BxAlyGa1-x-y N/AlN quantum well (QW) structures with double AlGaN delta layers were investigated theoretically. In contrast to conventional single dip-shaped QW structure where the reduction effect of the spatial separation between electron and hole wave functions is negligible, proposed double dip-shaped QW shows significant enhancement of the ultraviolet light emission intensity from a BAlGaN/AlN QW structure due to the reduced spatial separation between electron and hole wave functions. The emission peak of the double dip-shaped QW structure is expected to be about three times larger than that of the conventional rectangular AlGaN/AlN QW structure.

Kinetic instability of AlGaN alloys during MBE growth under metal-rich conditions on m-plane GaN miscut towards the -c axis

NASA Astrophysics Data System (ADS)

Shirazi-HD, M.; Diaz, R. E.; Nguyen, T.; Jian, J.; Gardner, G. C.; Wang, H.; Manfra, M. J.; Malis, O.

2018-04-01

AlxGa1-xN layers with Al-composition above 0.6 (0.6 < x < 0.9) grown under metal-rich conditions by plasma-assisted molecular beam epitaxy on m-plane GaN miscut towards the -c axis are kinetically unstable. Even under excess Ga flux, the effective growth rate of AlGaN is drastically reduced, likely due to suppression of Ga-N dimer incorporation. The defect structure generated during these growth conditions is studied with energy dispersive x-ray spectroscopy scanning transmission electron microscopy as a function of Al flux. The AlGaN growth results in the formation of thin Al(Ga)N layers with Al-composition higher than expected and lower Al-composition AlGaN islands. The AlGaN islands have a flat top and are elongated along the c-axis (i.e., stripe-like shape). Possible mechanisms for the observed experimental results are discussed. Our data are consistent with a model in which Al-N dimers promote release of Ga-N dimers from the m-plane surface.

Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice

PubMed Central

Wang, Xiao; Wang, Wei; Wang, Jingli; Wu, Hao; Liu, Chang

2017-01-01

P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)5/(GaN)1 superlattice (SL) in Al0.83Ga0.17N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as MgGa δ doped AlGaN SLs. Mg acceptor activation energy was significantly reduced from 0.378 to 0.331 eV by using MgGa δ doping in SLs instead of traditional doping in alloys. This new process was confirmed to be able to realize high p-type doping in high Al-content AlGaN. PMID:28290480

Sub-250nm room temperature optical gain from AlGaN materials with strong compositional fluctuations

NASA Astrophysics Data System (ADS)

Pecora, Emanuele; Zhang, Wei; Sun, Haiding; Nikiforov, A.; Yin, Jian; Paiella, Roberto; Moustakas, Theodore; Dal Negro, Luca

2013-03-01

Compact and portable deep-UV LEDs and laser sources are needed for a number of engineering applications including optical communications, gas sensing, biochemical agent detection, disinfection, biotechnology and medical diagnostics. We investigate the deep-UV optical emission and gain properties of AlxGa1-xN/AlyGa1-yN multiple quantum wells structure. These structures were grown by molecular-beam epitaxy on 6H-SiC substrates resulting in either homogeneous wells or various degrees of band-structure compositional fluctuations in the form of cluster-like features within the wells. We measured the TE-polarized amplified spontaneous emission in the sample with cluster-like features and quantified the optical absorption/gain coefficients and gain spectra by the Variable Stripe Length (VSL) technique under ultrafast optical pumping. We report blue-shift and narrowing of the emission, VSL traces, gain spectra, polarization studies, and the validity of the Schalow-Townes relation to demonstrate a maximum net modal gain of 120 cm-1 at 250 nm in the sample with strong compositional fluctuations. Moreover, we measure a very low gain threshold (15 μJ/cm2) . On the other hand, we found that samples with homogeneous quantum wells lead to absorption only. In addition, we report gain measurements in graded-index-separate-confined heterostructure (GRINSCH) designed to increase the device optical confinement factor.

Inverted Al0.25Ga0.75N/GaN ultraviolet p-i-n photodiodes formed on p-GaN template layer grown by metalorganic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Chang, Kuo-Hua; Sheu, Jinn-Kong; Lee, Ming-Lun; Tu, Shang-Ju; Yang, Chih-Ciao; Kuo, Huan-Shao; Yang, J. H.; Lai, Wei-Chih

2010-07-01

Inverted Al0.25Ga0.75N/GaN ultraviolet (UV) p-i-n photodiodes (PDs) were grown by selective-area regrowth on p-GaN template. The inverted devices with low-resistivity n-type AlGaN top-contact layers exhibited a typical zero-bias peak responsivity of 66.7 mA/W at 310 nm corresponding to the external quantum efficiency of 26.6%. The typical UV-to-visible (310/400 nm) spectral rejection ratio at zero-bias was over three orders of magnitude. The differential resistance and detectivity were obtained at approximately 6.2×1012 Ω and 3.4×1013 cm Hz1/2 W-1, respectively. Compared with conventional AlGaN/GaN-based UV p-i-n PDs, the proposed device structure can potentially achieve solar-blind AlGaN/GaN-based p-i-n PDs with low-aluminum content or aluminum-free p-contact layer and reduce excessive tensile strain due to the lattice mismatch between AlGaN and GaN layers.

Botulinum toxin detection using AlGaN /GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Wang, Yu-Lin; Chu, B. H.; Chen, K. H.; Chang, C. Y.; Lele, T. P.; Tseng, Y.; Pearton, S. J.; Ramage, J.; Hooten, D.; Dabiran, A.; Chow, P. P.; Ren, F.

2008-12-01

Antibody-functionalized, Au-gated AlGaN /GaN high electron mobility transistors (HEMTs) were used to detect botulinum toxin. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaN /GaN HEMT drain-source current showed a rapid response of less than 5s when the target toxin in a buffer was added to the antibody-immobilized surface. We could detect a range of concentrations from 1to10ng/ml. These results clearly demonstrate the promise of field-deployable electronic biological sensors based on AlGaN /GaN HEMTs for botulinum toxin detection.

Growth and optical characteristics of Tm-doped AlGaN layer grown by organometallic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Takatsu, J.; Fuji, R.; Tatebayashi, J.; Timmerman, D.; Lesage, A.; Gregorkiewicz, T.; Fujiwara, Y.

2018-04-01

We report on the growth and optical properties of Tm-doped AlGaN layers by organometallic vapor phase epitaxy (OMVPE). The morphological and optical properties of Tm-doped GaN (GaN:Tm) and Tm-doped AlGaN (AlGaN:Tm) were investigated by Nomarski differential interference contrast microscopy and photoluminescence (PL) characterization. Nomarski images reveal an increase of surface roughness upon doping Tm into both GaN and AlGaN layers. The PL characterization of GaN:Tm shows emission in the near-infrared range originating from intra-4f shell transitions of Tm3+ ions. In contrast, AlGaN:Tm also exhibits blue light emission from Tm3+ ions. In that case, the wider band gap of the AlGaN host allows energy transfer to higher states of the Tm3+ ions. With time-resolved PL measurements, we could distinguish three types of luminescent sites of Tm3+ in the AlGaN:Tm layer, having different decay times. Our results confirm that Tm ions can be doped into GaN and AlGaN by OMVPE, and show potential for the fabrication of novel high-color-purity blue light emitting diodes.

Control of Defects in Aluminum Gallium Nitride ((Al)GaN) Films on Grown Aluminum Nitride (AlN) Substrates

DTIC Science & Technology

2013-02-01

Nord, J.; Albe, K.; Erhart, P.; Nordlund, K. Modelling of Compound Semiconductors: Analytical Bond-order Potential for Gallium , Nitrogen and Gallium ...Control of Defects in Aluminum Gallium Nitride ((Al)GaN) Films on Grown Aluminum Nitride (AlN) Substrates by Iskander G. Batyrev, Chi-Chin Wu...Aluminum Gallium Nitride ((Al)GaN) Films on Grown Aluminum Nitride (AlN) Substrates Iskander G. Batyrev and N. Scott Weingarten Weapons and

Fabrication of Very High Efficiency 5.8 GHz Power Amplifiers using AlGaN HFETs on SiC Substrates for Wireless Power Transmission

NASA Technical Reports Server (NTRS)

Sullivan, Gerry

2001-01-01

For wireless power transmission using microwave energy, very efficient conversion of the DC power into microwave power is extremely important. Class E amplifiers have the attractive feature that they can, in theory, be 100% efficient at converting, DC power to RF power. Aluminum gallium nitride (AlGaN) semiconductor material has many advantageous properties, relative to silicon (Si), gallium arsenide (GaAs), and silicon carbide (SiC), such as a much larger bandgap, and the ability to form AlGaN/GaN heterojunctions. The large bandgap of AlGaN also allows for device operation at higher temperatures than could be tolerated by a smaller bandgap transistor. This could reduce the cooling requirements. While it is unlikely that the AlGaN transistors in a 5.8 GHz class E amplifier can operate efficiently at temperatures in excess of 300 or 400 C, AlGaN based amplifiers could operate at temperatures that are higher than a GaAs or Si based amplifier could tolerate. Under this program, AlGaN microwave power HFETs have been fabricated and characterized. Hybrid class E amplifiers were designed and modeled. Unfortunately, within the time frame of this program, good quality HFETs were not available from either the RSC laboratories or commercially, and so the class E amplifiers were not constructed.

Piezoelectric domains in the AlGaN hexagonal microrods: Effect of crystal orientations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sivadasan, A. K., E-mail: sivankondazhy@gmail.com, E-mail: gm@igcar.gov.in, E-mail: dhara@igcar.gov.in; Dhara, Sandip, E-mail: sivankondazhy@gmail.com, E-mail: gm@igcar.gov.in, E-mail: dhara@igcar.gov.in; Mangamma, G., E-mail: sivankondazhy@gmail.com, E-mail: gm@igcar.gov.in, E-mail: dhara@igcar.gov.in

2016-05-07

Presently, the piezoelectric materials are finding tremendous applications in the micro-mechanical actuators, sensors, and self-powered devices. In this context, the studies pertaining to piezoelectric properties of materials in the different size ranges are very important for the scientific community. The III-nitrides are exceptionally important, not only for optoelectronic but also for their piezoelectric applications. In the present study, we synthesized AlGaN via self-catalytic vapor-solid mechanism by atmospheric pressure chemical vapor deposition technique on AlN base layer over intrinsic Si(100) substrate. The growth process is substantiated using X-ray diffraction and X-ray photoelectron spectroscopy. The Raman and photoluminescence studies reveal the formationmore » of AlGaN microrods in the wurtzite phase and ensure the high optical quality of the crystalline material. The single crystalline, direct wide band gap and hexagonally shaped AlGaN microrods are studied for understanding the behavior of the crystallites under the application of constant external electric field using the piezoresponse force microscopy. The present study is mainly focused on understanding the behavior of induced polarization for the determination of piezoelectric coefficient of AlGaN microrod along the c-axis and imaging of piezoelectric domains in the sample originating because of the angular inclination of AlGaN microrods with respect to its AlN base layers.« less

Surface passivation and self-regulated shell growth in selective area-grown GaN-(Al,Ga)N core-shell nanowires.

PubMed

Hetzl, Martin; Winnerl, Julia; Francaviglia, Luca; Kraut, Max; Döblinger, Markus; Matich, Sonja; Fontcuberta I Morral, Anna; Stutzmann, Martin

2017-06-01

The large surface-to-volume ratio of GaN nanowires implicates sensitivity of the optical and electrical properties of the nanowires to their surroundings. The implementation of an (Al,Ga)N shell with a larger band gap around the GaN nanowire core is a promising geometry to seal the GaN surface. We investigate the luminescence and structural properties of selective area-grown GaN-(Al,Ga)N core-shell nanowires grown on Si and diamond substrates. While the (Al,Ga)N shell allows a suppression of yellow defect luminescence from the GaN core, an overall intensity loss due to Si-related defects at the GaN/(Al,Ga)N interface has been observed in the case of Si substrates. Scanning transmission electron microscopy measurements indicate a superior crystal quality of the (Al,Ga)N shell along the nanowire side facets compared to the (Al,Ga)N cap at the top facet. A nucleation study of the (Al,Ga)N shell reveals a pronounced bowing of the nanowires along the c-direction after a short deposition time which disappears for longer growth times. This is assigned to an initially inhomogeneous shell nucleation. A detailed study of the proceeding shell growth allows the formulation of a strain-driven self-regulating (Al,Ga)N shell nucleation model.

Extreme Radiation Hardness and Space Qualification of AlGaN Optoelectronic Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Ke-Xun; Balakrishnan, Kathik; Hultgren, Eric

2010-09-21

Unprecedented radiation hardness and environment robustness are required in the new generation of high energy density physics (HEDP) experiments and deep space exploration. National Ignition Facility (NIF) break-even shots will have a neutron yield of 1015 or higher. The Europa Jupiter System Mission (EJSM) mission instruments will be irradiated with a total fluence of 1012 protons/cm2 during the space journey. In addition, large temperature variations and mechanical shocks are expected in these applications under extreme conditions. Hefty radiation and thermal shields are required for Si and GaAs based electronics and optoelectronics devices. However, for direct illumination and imaging applications, shieldingmore » is not a viable option. It is an urgent task to search for new semiconductor technologies and to develop radiation hard and environmentally robust optoelectronic devices. We will report on our latest systematic experimental studies on radiation hardness and space qualifications of AlGaN optoelectronic devices: Deep UV Light Emitting Diodes (DUV LEDs) and solarblind UV Photodiodes (PDs). For custom designed AlGaN DUV LEDs with a central emission wavelength of 255 nm, we have demonstrated its extreme radiation hardness up to 2x1012 protons/cm2 with 63.9 MeV proton beams. We have demonstrated an operation lifetime of over 26,000 hours in a nitrogen rich environment, and 23,000 hours of operation in vacuum without significant power drop and spectral shift. The DUV LEDs with multiple packaging styles have passed stringent space qualifications with 14 g random vibrations, and 21 cycles of 100K temperature cycles. The driving voltage, current, emission spectra and optical power (V-I-P) operation characteristics exhibited no significant changes after the space environmental tests. The DUV LEDs will be used for photoelectric charge management in space flights. For custom designed AlGaN UV photodiodes with a central response wavelength of 255 nm, we have demonstrated its extreme radiation hardness using a 65 MeV proton beam line. The solar-blind AlGaN photodiodes retained ~50% responsivity up to 3x1012 protons/cm2 fluence. The Stanford-NSTec-SETI team will continue to develop radiation hard optoelectronic devices for applications under extreme conditions.« less

Physical and electrical characterizations of AlGaN/GaN MOS gate stacks with AlGaN surface oxidation treatment

NASA Astrophysics Data System (ADS)

Yamada, Takahiro; Watanabe, Kenta; Nozaki, Mikito; Shih, Hong-An; Nakazawa, Satoshi; Anda, Yoshiharu; Ueda, Tetsuzo; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

2018-06-01

The impacts of inserting ultrathin oxides into insulator/AlGaN interfaces on their electrical properties were investigated to develop advanced AlGaN/GaN metal–oxide–semiconductor (MOS) gate stacks. For this purpose, the initial thermal oxidation of AlGaN surfaces in oxygen ambient was systematically studied by synchrotron radiation X-ray photoelectron spectroscopy (SR-XPS) and atomic force microscopy (AFM). Our physical characterizations revealed that, when compared with GaN surfaces, aluminum addition promotes the initial oxidation of AlGaN surfaces at temperatures of around 400 °C, followed by smaller grain growth above 850 °C. Electrical measurements of AlGaN/GaN MOS capacitors also showed that, although excessive oxidation treatment of AlGaN surfaces over around 700 °C has an adverse effect, interface passivation with the initial oxidation of the AlGaN surfaces at temperatures ranging from 400 to 500 °C was proven to be beneficial for fabricating high-quality AlGaN/GaN MOS gate stacks.

Fast Solar-Blind AlGaN/GaN 2DEG UV detector with Transparent Graphene Electrode

DTIC Science & Technology

2017-03-01

graphene and 2D electron gas (2DEG). With introducing the graphene, photo-carriers separated by the polarization electric field of the AlGaN are...photodiodes, due to the strong intrinsic polarization effect of AlGaN. More than 105 of high signal to noise ratio of the UV detectors with fast...intrinsic polarization field vertically inside the AlGaN, the holes and electrons will travel in their shortest paths to graphene and 2DEG

Control of short-channel effects in InAlN/GaN high-electron mobility transistors using graded AlGaN buffer

NASA Astrophysics Data System (ADS)

Han, Tiecheng; Zhao, Hongdong; Peng, Xiaocan; Li, Yuhai

2018-04-01

A graded AlGaN buffer is designed to realize the p-type buffer by inducing polarization-doping holes. Based on the two-dimensional device simulator, the effect of the graded AlGaN buffer on the direct-current (DC) and radio-frequency (RF) performance of short-gate InAlN/GaN high-electron mobility transistors (HEMTs) are investigated, theoretically. Compared to standard HEMT, an enhancement of electron confinement and a good control of short-channel effect (SCEs) are demonstrated in the graded AlGaN buffer HEMT. Accordingly, the pinched-off behavior and the ability of gate modulation are significantly improved. And, no serious SCEs are observed in the graded AlGaN buffer HEMT with an aspect ratio (LG/tch) of about 6.7, much lower than that of the standard HEMT (LG/tch = 13). In addition, for a 70-nm gate length, a peak current gain cutoff frequency (fT) of 171 GHz and power gain cutoff frequency (fmax) of 191 GHz are obtained in the grade buffer HEMT, which are higher than those of the standard one with the same gate length.

Reduction of Defects in AlGaN Grown on Nanoscale-Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy

PubMed Central

Tasi, Chi-Tsung; Wang, Wei-Kai; Tsai, Tsung-Yen; Huang, Shih-Yung; Horng, Ray-Hua; Wuu, Dong-Sing

2017-01-01

In this study, a 3-μm-thick AlGaN film with an Al mole fraction of 10% was grown on a nanoscale-patterned sapphire substrate (NPSS) using hydride vapor phase epitaxy (HVPE). The growth mechanism, crystallization, and surface morphology of the epilayers were examined using X-ray diffraction, transmission electron microscopy (TEM), and scanning electron microscopy at various times in the growth process. The screw threading dislocation (TD) density of AlGaN-on-NPSS can improve to 1–2 × 109 cm−2, which is significantly lower than that of the sample grown on a conventional planar sapphire substrate (7 × 109 cm−2). TEM analysis indicated that these TDs do not subsequently propagate to the surface of the overgrown AlGaN layer, but bend or change directions in the region above the voids within the side faces of the patterned substrates, possibly because of the internal stress-relaxed morphologies of the AlGaN film. Hence, the laterally overgrown AlGaN films were obtained by HVPE, which can serve as a template for the growth of ultraviolet III-nitride optoelectronic devices. PMID:28772961

Reduction of Defects in AlGaN Grown on Nanoscale-Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy.

PubMed

Tasi, Chi-Tsung; Wang, Wei-Kai; Tsai, Tsung-Yen; Huang, Shih-Yung; Horng, Ray-Hua; Wuu, Dong-Sing

2017-05-31

In this study, a 3-μm-thick AlGaN film with an Al mole fraction of 10% was grown on a nanoscale-patterned sapphire substrate (NPSS) using hydride vapor phase epitaxy (HVPE). The growth mechanism, crystallization, and surface morphology of the epilayers were examined using X-ray diffraction, transmission electron microscopy (TEM), and scanning electron microscopy at various times in the growth process. The screw threading dislocation (TD) density of AlGaN-on-NPSS can improve to 1-2 × 10⁸ cm -2 , which is significantly lower than that of the sample grown on a conventional planar sapphire substrate (7 × 10⁸ cm -2 ). TEM analysis indicated that these TDs do not subsequently propagate to the surface of the overgrown AlGaN layer, but bend or change directions in the region above the voids within the side faces of the patterned substrates, possibly because of the internal stress-relaxed morphologies of the AlGaN film. Hence, the laterally overgrown AlGaN films were obtained by HVPE, which can serve as a template for the growth of ultraviolet III-nitride optoelectronic devices.

Optical, structural, and nuclear scientific studies of AlGaN with high Al composition

NASA Astrophysics Data System (ADS)

Lin, Tse Yang; Chung, Yee Ling; Li, Lin; Yao, Shude; Lee, Y. C.; Feng, Zhe Chuan; Ferguson, Ian T.; Lu, Weijie

2010-08-01

AlGaN epilayers with higher Al-compositions were grown by Metalorganic Chemical Vapor Deposition (MOCVD) on (0001) sapphire. Trimethylgallium (TMGa), trimethylaluminium (TMAl) and NH3 were used as the source precursors for Ga, Al, and N, respectively. A 25 nm AlN nucleation layer was first grown at low-temperature of 590 °C at 300 Torr. Followed, AlxGa1-xN layers were grown at 1080 °C on low-temperature AlN nucleation layers. The heterostructures were characterized by a series of techniques, including x-ray diffraction (XRD), Rutherford backscattering (RBS), photoluminescence (PL), scanning electron microscopy (SEM) and Raman scattering. Precise Al compositions were determined through XRD, RBS, and SEM combined measurements. Room Temperature Raman Scattering spectra shows three major bands from AlGaN alloys, which are AlN-like, A1 longitudinal optical (LO) phonon modes, and E2 transverse optical (TO) band, respectively, plus several peak comes from the substrate. Raman spectral line shape analysis lead to an optical determination of the electrical property free carrier concentration of AlGaN. The optical properties of AlGaN with high Al composition were presented here.

InGaN directional coupler made with a one-step etching technique

NASA Astrophysics Data System (ADS)

Gao, Xumin; Yuan, Jialei; Yang, Yongchao; Zhang, Shuai; Shi, Zheng; Li, Xin; Wang, Yongjin

2017-06-01

We propose, fabricate and characterize an on-chip integration of light source, InGaN waveguide, directional coupler and photodiode, in which AlGaN layers are used as top and bottom optical claddings to form an InGaN waveguide for guiding the in-plane emitted light from the InGaN/GaN multiple-quantum-well light-emitting diode (MQW-LED). The difference in etch rate caused by different exposure windows leads to an etching depth discrepancy using the one-step etching technique, which forms the InGaN directional coupler with the overlapped underlying slab. Light propagation results directly confirm effective light coupling in the InGaN directional coupler, which is achieved through high-order guided modes. The InGaN waveguide couples the modulated light from the InGaN/GaN MQW-LED and transfers part of light to the coupled waveguide via the InGaN directional coupler. The in-plane InGaN/GaN MQW-photodiode absorbs the guided light by the coupled InGaN waveguide and induces the photocurrent. The on-chip InGaN photonic integration experimentally demonstrates an in-plane light communication with a data transmission of 50 Mbps.

Large-Format AlGaN PIN Photodiode Arrays for UV Images

NASA Technical Reports Server (NTRS)

Aslam, Shahid; Franz, David

2010-01-01

A large-format hybridized AlGaN photodiode array with an adjustable bandwidth features stray-light control, ultralow dark-current noise to reduce cooling requirements, and much higher radiation tolerance than previous technologies. This technology reduces the size, mass, power, and cost of future ultraviolet (UV) detection instruments by using lightweight, low-voltage AlGaN detectors in a hybrid detector/multiplexer configuration. The solar-blind feature eliminates the need for additional visible light rejection and reduces the sensitivity of the system to stray light that can contaminate observations.

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

NASA Astrophysics Data System (ADS)

Bryan, Isaac; Bryan, Zachary; Washiyama, Shun; Reddy, Pramod; Gaddy, Benjamin; Sarkar, Biplab; Breckenridge, M. Hayden; Guo, Qiang; Bobea, Milena; Tweedie, James; Mita, Seiji; Irving, Douglas; Collazo, Ramon; Sitar, Zlatko

2018-02-01

In order to understand the influence of dislocations on doping and compensation in Al-rich AlGaN, thin films were grown by metal organic chemical vapor deposition (MOCVD) on different templates on sapphire and low dislocation density single crystalline AlN. AlGaN grown on AlN exhibited the highest conductivity, carrier concentration, and mobility for any doping concentration due to low threading dislocation related compensation and reduced self-compensation. The onset of self-compensation, i.e., the "knee behavior" in conductivity, was found to depend only on the chemical potential of silicon, strongly indicating the cation vacancy complex with Si as the source of self-compensation. However, the magnitude of self-compensation was found to increase with an increase in dislocation density, and consequently, AlGaN grown on AlN substrates demonstrated higher conductivity over the entire doping range.

Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates

DOE PAGES

Crawford, Mary H.; Allerman, Andrew A.; Armstrong, Andrew M.; ...

2015-10-30

We fabricated optically pumped and electrically injected ultraviolet (UV) lasers on reduced-threading-dislocation-density (reduced-TDD) AlGaN templates. The overgrowth of sub-micron-wide mesas in the Al 0.32Ga 0.68N templates enabled a tenfold reduction in TDD, to (2–3) × 10 8 cm –2. Optical pumping of AlGaN hetero-structures grown on the reduced-TDD templates yielded a low lasing threshold of 34 kW/cm 2 at 346 nm. Room-temperature pulsed operation of laser diodes at 353 nm was demonstrated, with a threshold of 22.5 kA/cm 2. Furthermore, reduced-TDD templates have been developed across the entire range of AlGaN compositions, presenting a promising approach for extending laser diodesmore » into the deep UV.« less

AlGaN Channel Transistors for Power Management and Distribution

NASA Technical Reports Server (NTRS)

VanHove, James M.

1996-01-01

Contained within is the Final report of a Phase 1 SBIR program to develop AlGaN channel junction field effect transistors (JFET). The report summarizes our work to design, deposit, and fabricate JFETS using molecular beam epitaxy growth AlGaN. Nitride growth is described using a RF atomic nitrogen plasma source. Processing steps needed to fabricate the device such as ohmic source-drain contacts, reactive ion etching, gate formation, and air bride fabrication are documented. SEM photographs of fabricated power FETS are shown. Recommendations are made to continue the effort in a Phase 2 Program.

Design of Al-rich AlGaN quantum well structures for efficient UV emitters

NASA Astrophysics Data System (ADS)

Funato, Mitsuru; Ichikawa, Shuhei; Kumamoto, Kyosuke; Kawakami, Yoichi

2017-02-01

The effects of the structure design of AlGaN-based quantum wells (QWs) on the optical properties are discussed. We demonstrate that to achieve efficient emission in the germicidal wavelength range (250 - 280 nm), AlxGa1-xN QWs in an AlyGa1-yN matrix (x < y) is quite effective, compared with those in an AlN matrix: Time-resolved photoluminescence and cathodoluminescence spectroscopies show that the AlyGa1-yN matrix can enhance the radiative recombination process and can prevent misfit dislocations, which act as non-radiative recombination centers, from being induced in the QW interface. As a result, the emission intensity at room temperature is about 2.7 times larger for the AlxGa1-xN QW in the AlyGa1-yN matrix than that in the AlN matrix. We also point out that further reduction of point defects is crucial to achieve an even higher emission efficiency.

Nitride based quantum well light-emitting devices having improved current injection efficiency

DOEpatents

Tansu, Nelson; Zhao, Hongping; Liu, Guangyu; Arif, Ronald

2014-12-09

A III-nitride based device provides improved current injection efficiency by reducing thermionic carrier escape at high current density. The device includes a quantum well active layer and a pair of multi-layer barrier layers arranged symmetrically about the active layer. Each multi-layer barrier layer includes an inner layer abutting the active layer; and an outer layer abutting the inner layer. The inner barrier layer has a bandgap greater than that of the outer barrier layer. Both the inner and the outer barrier layer have bandgaps greater than that of the active layer. InGaN may be employed in the active layer, AlInN, AlInGaN or AlGaN may be employed in the inner barrier layer, and GaN may be employed in the outer barrier layer. Preferably, the inner layer is thin relative to the other layers. In one embodiment the inner barrier and active layers are 15 .ANG. and 24 .ANG. thick, respectively.

A Comparative Study of AlGaN and InGaN Back-Barriers in Ultrathin-Barrier AlN/GaN Heterostructures

NASA Astrophysics Data System (ADS)

All Abbas, J. M.; Atmaca, G.; Narin, P.; Kutlu, E.; Sarikavak-Lisesivdin, B.; Lisesivdin, S. B.

2017-08-01

Investigations of the effects of back-barrier introduction on the two-dimensional electron gas (2DEG) of ultrathin-barrier AlN/GaN heterostructures with AlGaN and InGaN back-barriers are carried out using self-consistent solutions of 1-dimensional Schrödinger-Poisson equations. Inserted AlGaN and InGaN back-barriers are used to provide a good 2DEG confinement thanks to raising the conduction band edge of GaN buffer with respect to GaN channel layer. Therefore, in this paper the influence of these back-barrier layers on sheet carrier density, 2DEG confinement, and mobility are systematically and comparatively investigated. As a result of calculations, although sheet carrier density is found to decrease with InGaN back-barrier layer, it is not changed with AlGaN back-barrier layer for suggested optimise heterostructures. Obtained results can give some insights for further experimental studies.

Semi-polar (11-22) AlGaN on overgrown GaN on micro-rod templates: Simultaneous management of crystal quality improvement and cracking issue

NASA Astrophysics Data System (ADS)

Li, Z.; Jiu, L.; Gong, Y.; Wang, L.; Zhang, Y.; Bai, J.; Wang, T.

2017-02-01

Thick and crack-free semi-polar (11-22) AlGaN layers with various high Al compositions have been achieved by means of growth on the top of nearly but not yet fully coalesced GaN overgrown on micro-rod templates. The range of the Al composition of up to 55.7% was achieved, corresponding to an emission wavelength of up to 270 nm characterised by photoluminescence at room temperature. X-ray diffraction (XRD) measurements show greatly improved crystal quality as a result of lateral overgrowth compared to the AlGaN counterparts on standard planar substrates. The full width at half maximums of the XRD rocking curves measured along the [1-100]/[11-2-3] directions (the two typical orientations for characterizing the crystal quality of (11-22) AlGaN) are 0.2923°/0.2006° for 37.8% Al and 0.3825°/0.2064° for 55.7% Al, respectively, which have never been achieved previously. Our calculation based on reciprocal space mapping measurements has demonstrated significant strain relaxation in the AlGaN as a result of utilising the non-coalesced GaN underneath, contributing to the elimination of any cracks. The results presented have demonstrated that our overgrowth technique can effectively manage strain and improve crystal quality simultaneously.

Bias Selectable Dual Band AlGaN Ultra-violet Detectors

NASA Technical Reports Server (NTRS)

Yan, Feng; Miko, Laddawan; Franz, David; Guan, Bing; Stahle, Carl M.

2007-01-01

Bias selectable dual band AlGaN ultra-violet (UV) detectors, which can separate UV-A and UV-B using one detector in the same pixel by bias switching, have been designed, fabricated and characterized. A two-terminal n-p-n photo-transistor-like structure was used. When a forward bias is applied between the top electrode and the bottom electrode, the detectors can successfully detect W-A and reject UV-B. Under reverse bias, they can detect UV-B and reject UV-A. The proof of concept design shows that it is feasible to fabricate high performance dual-band UV detectors based on the current AlGaN material growth and fabrication technologies.

Enhanced light extraction in tunnel junction-enabled top emitting UV LEDs

DOE PAGES

Zhang, Yuewei; Allerman, Andrew A.; Krishnamoorthy, Sriram; ...

2016-04-11

The efficiency of ultra violet LEDs has been critically limited by the absorption losses in p-type and metal layers. In this work, surface roughening based light extraction structures are combined with tunneling based p-contacts to realize highly efficient top-side light extraction efficiency in UV LEDs. Surface roughening of the top n-type AlGaN contact layer is demonstrated using self-assembled Ni nano-clusters as etch mask. The top surface roughened LEDs were found to enhance external quantum efficiency by over 40% for UV LEDs with a peak emission wavelength of 326 nm. The method described here can enable highly efficient UV LEDs withoutmore » the need for complex manufacturing methods such as flip chip bonding.« less

Lasing and Longitudinal Cavity Modes in Photo-Pumped Deep Ultraviolet AlGaN Heterostructures

DTIC Science & Technology

2013-04-29

of the structures were intentionally doped. The AlGaN composition was determined by triple -axis high-resolution X-ray diffraction measurements. Cross...threshold can be achieved on single crystal AlN substrates. This achievement serves as a starting point towards realizing electrically pumped sub-300 nm UV

Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih

Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and the light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polarization engineered tunnel junctions for ultra-wide bandgap AlGaN (Al mole fraction >50%) materials towards highly efficient UV LEDs. We demonstrate that polarization-induced three dimensional charge is beneficial in reducing tunneling barriers especially for high composition AlGaN tunnel junctions. In addition, the design of graded tunnel junction structures could lead to low tunneling resistance below 10 –3 Ω cm 2 and lowmore » voltage consumption below 1 V (at 1 kA/cm 2) for high composition AlGaN tunnel junctions. Experimental demonstration of 292 nm emission was achieved through non-equilibrium hole injection into wide bandgap materials with bandgap energy larger than 4.7 eV, and detailed modeling of tunnel junctions shows that they can be engineered to have low resistance and can enable efficient emitters in the UV-C wavelength range.« less

Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

DOE PAGES

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; ...

2016-09-19

Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and the light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polarization engineered tunnel junctions for ultra-wide bandgap AlGaN (Al mole fraction >50%) materials towards highly efficient UV LEDs. We demonstrate that polarization-induced three dimensional charge is beneficial in reducing tunneling barriers especially for high composition AlGaN tunnel junctions. In addition, the design of graded tunnel junction structures could lead to low tunneling resistance below 10 –3 Ω cm 2 and lowmore » voltage consumption below 1 V (at 1 kA/cm 2) for high composition AlGaN tunnel junctions. Experimental demonstration of 292 nm emission was achieved through non-equilibrium hole injection into wide bandgap materials with bandgap energy larger than 4.7 eV, and detailed modeling of tunnel junctions shows that they can be engineered to have low resistance and can enable efficient emitters in the UV-C wavelength range.« less

Dislocation blocking by AlGaN hot electron injecting layer in the epitaxial growth of GaN terahertz Gunn diode

NASA Astrophysics Data System (ADS)

Li, Liang; Yang, Lin'an; Zhang, Jincheng; Hao, Yue

2013-09-01

This paper reports an efficient method to improve the crystal quality of GaN Gunn diode with AlGaN hot electron injecting layer (HEI). An evident reduction of screw dislocation and edge dislocation densities is achieved by the strain management and the enhanced lateral growth in high temperature grown AlGaN HEI layer. Compared with the top hot electron injecting layer (THEI) structure, the bottom hot electron injecting layer (BHEI) structure enhances the crystal quality of transit region due to the growth sequence modulation of HEI layer. A high Hall mobility of 2934 cm2/Vs at 77 K, a nearly flat downtrend of Hall mobility at the temperature ranging from 300 to 573 K, a low intensity of ratio of yellow luminescence band to band edge emission, a narrow band edge emission line-width, and a smooth surface morphology are observed for the BHEI structural epitaxy of Gunn diode, which indicates that AlGaN BHEI structure is a promising candidate for fabrication of GaN Gunn diodes in terahertz regime.

Self-terminated etching of GaN with a high selectivity over AlGaN under inductively coupled Cl2/N2/O2 plasma with a low-energy ion bombardment

NASA Astrophysics Data System (ADS)

Zhong, Yaozong; Zhou, Yu; Gao, Hongwei; Dai, Shujun; He, Junlei; Feng, Meixin; Sun, Qian; Zhang, Jijun; Zhao, Yanfei; DingSun, An; Yang, Hui

2017-10-01

Etching of GaN/AlGaN heterostructure by O-containing inductively coupled Cl2/N2 plasma with a low-energy ion bombardment can be self-terminated at the surface of the AlGaN layer. The estimated etching rates of GaN and AlGaN were 42 and 0.6 nm/min, respectively, giving a selective etching ratio of 70:1. To study the mechanism of the etching self-termination, detailed characterization and analyses were carried out, including X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectroscopy (TOF-SIMS). It was found that in the presence of oxygen, the top surface of the AlGaN layer was converted into a thin film of (Al,Ga)Ox with a high bonding energy, which effectively prevented the underlying atoms from a further etching, resulting in a nearly self-terminated etching. This technique enables a uniform and reproducible fabrication process for enhancement-mode high electron mobility transistors with a p-GaN gate.

High-Temperature Growth of GaN and Al x Ga1- x N via Ammonia-Based Metalorganic Molecular-Beam Epitaxy

NASA Astrophysics Data System (ADS)

Billingsley, Daniel; Henderson, Walter; Doolittle, W. Alan

2010-05-01

The effect of high-temperature growth on the crystalline quality and surface morphology of GaN and Al x Ga1- x N grown by ammonia-based metalorganic molecular-beam epitaxy (NH3-MOMBE) has been investigated as a means of producing atomically smooth films suitable for device structures. The effects of V/III ratio on the growth rate and surface morphology are described herein. The crystalline quality of both GaN and AlGaN was found to mimic that of the GaN templates, with (002) x-ray diffraction (XRD) full-widths at half- maximum (FWHMs) of ~350 arcsec. Nitrogen-rich growth conditions have been found to provide optimal surface morphologies with a root-mean-square (RMS) roughness of ~0.8 nm, yet excessive N-rich environments have been found to reduce the growth rate and result in the formation of faceted surface pitting. AlGaN exhibits a decreased growth rate, as compared with GaN, due to increased N recombination as a result of the increased pyrolysis of NH3 in the presence of Al. AlGaN films grown directly on GaN templates exhibited Pendellösung x-ray fringes, indicating an abrupt interface and a planar AlGaN film. AlGaN films grown for this study resulted in an optimal RMS roughness of ~0.85 nm with visible atomic steps.

High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reddy, Pramod; Washiyama, Shun; Kaess, Felix

2016-04-14

In this work, we employed X-ray photoelectron spectroscopy to determine the band offsets and interface Fermi level at the heterojunction formed by stoichiometric silicon nitride deposited on Al{sub x}Ga{sub 1-x}N (of varying Al composition “x”) via low pressure chemical vapor deposition. Silicon nitride is found to form a type II staggered band alignment with AlGaN for all Al compositions (0 ≤ x ≤ 1) and present an electron barrier into AlGaN even at higher Al compositions, where E{sub g}(AlGaN) > E{sub g}(Si{sub 3}N{sub 4}). Further, no band bending is observed in AlGaN for x ≤ 0.6 and a reduced band bending (by ∼1 eV in comparison to that atmore » free surface) is observed for x > 0.6. The Fermi level in silicon nitride is found to be at 3 eV with respect to its valence band, which is likely due to silicon (≡Si{sup 0/−1}) dangling bonds. The presence of band bending for x > 0.6 is seen as a likely consequence of Fermi level alignment at Si{sub 3}N{sub 4}/AlGaN hetero-interface and not due to interface states. Photoelectron spectroscopy results are corroborated by current-voltage-temperature and capacitance-voltage measurements. A shift in the interface Fermi level (before band bending at equilibrium) from the conduction band in Si{sub 3}N{sub 4}/n-GaN to the valence band in Si{sub 3}N{sub 4}/p-GaN is observed, which strongly indicates a reduction in mid-gap interface states. Hence, stoichiometric silicon nitride is found to be a feasible passivation and dielectric insulation material for AlGaN at any composition.« less

Pressure Study of Photoluminescence in GaN/InGaN/ AlGaN Quantum Wells

NASA Astrophysics Data System (ADS)

Perlin, Piotr; Iota, V.; Weinstein, B. A.; Wisniewski, P.; Osinski, M.; Eliseev, P. G.

1997-03-01

We have studied the photoluminescence (PL) from two commercial high brightness single quantum well light emitting diodes (Nichia Chem. Industs.) with In_xGa_1-x N (x=0.45 and 0.2) as the active layers under hydrostatic pressures up to 7 GPa. These diodes are the best existing light emitters at short wavelengths, having the emission wavelengths of 430 nm and 530 nm depending on the content of indium in the 30 Åthick quantum wells. Although these devices show a remarkable quality and efficiency (luminosity as high as 12 cd), the mechanism of recombination remains obscure. We discovered that the pressure coefficient for each of the observed PL peaks is dramatically (2-3 times) lower than that of the energy gap of its InGaN active layer. These observations, in conjunction with the fact that the observed emission occurs below the energy gap of the quantum well material, and also considering the anomalous temperature behavior of the emission (peak energy increasing with temperature) suggest the involvement of localized states and exclude a simple band-to-band recombination picture. These localized states may be tentatively attributed to the presence of band tails in the gap which stem from composition fluctuations in the InGaN alloy. (figures)

Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Jie, E-mail: jie.yang@yale.edu; Cui, Sharon; Ma, T. P.

2013-11-25

We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5 eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

Polariton Bose–Einstein condensate at room temperature in an Al(Ga)N nanowire–dielectric microcavity with a spatial potential trap

PubMed Central

Das, Ayan; Bhattacharya, Pallab; Heo, Junseok; Banerjee, Animesh; Guo, Wei

2013-01-01

A spatial potential trap is formed in a 6.0-μm Al(Ga)N nanowire by varying the Al composition along its length during epitaxial growth. The polariton emission characteristics of a dielectric microcavity with the single nanowire embedded in-plane have been studied at room temperature. Excitation is provided at the Al(Ga)N end of the nanowire, and polariton emission is observed from the lowest bandgap GaN region within the potential trap. Comparison of the results with those measured in an identical microcavity with a uniform GaN nanowire and having an identical exciton–photon detuning suggests evaporative cooling of the polaritons as they are transported into the trap in the Al(Ga)N nanowire. Measurement of the spectral characteristics of the polariton emission, their momentum distribution, first-order spatial coherence, and time-resolved measurements of polariton cooling provides strong evidence of the formation of a near-equilibrium Bose–Einstein condensate in the GaN region of the nanowire at room temperature. In contrast, the condensate formed in the uniform GaN nanowire–dielectric microcavity without the spatial potential trap is only in self-equilibrium. PMID:23382183

Enzymatic glucose detection using ZnO nanorods on the gate region of AlGaN /GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Kang, B. S.; Wang, H. T.; Ren, F.; Pearton, S. J.; Morey, T. E.; Dennis, D. M.; Johnson, J. W.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.

2007-12-01

ZnO nanorod-gated AlGaN /GaN high electron mobility transistors (HEMTs) are demonstrated for the detection of glucose. A ZnO nanorod array was selectively grown on the gate area using low temperature hydrothermal decomposition to immobilize glucose oxidase (GOx). The one-dimensional ZnO nanorods provide a large effective surface area with high surface-to-volume ratio and provide a favorable environment for the immobilization of GOx. The AlGaN /GaN HEMT drain-source current showed a rapid response of less than 5s when target glucose in a buffer with a pH value of 7.4 was added to the GOx immobilized on the ZnO nanorod surface. We could detect a wide range of concentrations from 0.5nMto125μM. The sensor exhibited a linear range from 0.5nMto14.5μM and an experiment limit of detection of 0.5nM. This demonstrates the possibility of using AlGaN /GaN HEMTs for noninvasive exhaled breath condensate based glucose detection of diabetic application.

Analysis of 2D Transport and Performance Characteristics for Lateral Power Devices Based on AlGaN Alloys

DOE PAGES

Coltrin, Michael E.; Baca, Albert G.; Kaplar, Robert J.

2017-10-26

In this paper, predicted lateral power device performance as a function of alloy composition is characterized by a standard lateral device figure-of-merit (LFOM) that depends on mobility, critical electric field, and sheet carrier density. The paper presents calculations of AlGaN electron mobility in lateral devices such as HEMTs across the entire alloy composition range. Alloy scattering and optical polar phonon scattering are the dominant mechanisms limiting carrier mobility. Due to the significant degradation of mobility from alloy scattering, at room temperature Al fractions greater than about 85% are required for improved LFOM relative to GaN using a conservative sheet chargemore » density of 1 × 10 13 cm –2. However, at higher temperatures at which AlGaN power devices are anticipated to operate, this “breakeven” composition decreases to about 65% at 500 K, for example. For high-frequency applications, the Johnson figure-of-merit (JFOM) is the relevant metric to compare potential device performance across materials platforms. At room temperature, the JFOM for AlGaN alloys is predicted to surpass that of GaN for Al fractions greater than about 40%.« less

Analysis of 2D Transport and Performance Characteristics for Lateral Power Devices Based on AlGaN Alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Coltrin, Michael E.; Baca, Albert G.; Kaplar, Robert J.

In this paper, predicted lateral power device performance as a function of alloy composition is characterized by a standard lateral device figure-of-merit (LFOM) that depends on mobility, critical electric field, and sheet carrier density. The paper presents calculations of AlGaN electron mobility in lateral devices such as HEMTs across the entire alloy composition range. Alloy scattering and optical polar phonon scattering are the dominant mechanisms limiting carrier mobility. Due to the significant degradation of mobility from alloy scattering, at room temperature Al fractions greater than about 85% are required for improved LFOM relative to GaN using a conservative sheet chargemore » density of 1 × 10 13 cm –2. However, at higher temperatures at which AlGaN power devices are anticipated to operate, this “breakeven” composition decreases to about 65% at 500 K, for example. For high-frequency applications, the Johnson figure-of-merit (JFOM) is the relevant metric to compare potential device performance across materials platforms. At room temperature, the JFOM for AlGaN alloys is predicted to surpass that of GaN for Al fractions greater than about 40%.« less

GaN/NbN epitaxial semiconductor/superconductor heterostructures

NASA Astrophysics Data System (ADS)

Yan, Rusen; Khalsa, Guru; Vishwanath, Suresh; Han, Yimo; Wright, John; Rouvimov, Sergei; Katzer, D. Scott; Nepal, Neeraj; Downey, Brian P.; Muller, David A.; Xing, Huili G.; Meyer, David J.; Jena, Debdeep

2018-03-01

Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors—silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor—an electronic gain element—to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance—a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.

GaN/NbN epitaxial semiconductor/superconductor heterostructures.

PubMed

Yan, Rusen; Khalsa, Guru; Vishwanath, Suresh; Han, Yimo; Wright, John; Rouvimov, Sergei; Katzer, D Scott; Nepal, Neeraj; Downey, Brian P; Muller, David A; Xing, Huili G; Meyer, David J; Jena, Debdeep

2018-03-07

Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors-silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor-an electronic gain element-to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance-a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.

Superconductivity and tunneling-junctions in epitaxial Nb2N/AlN/GaN heterojunctions

NASA Astrophysics Data System (ADS)

Yan, Rusen; Han, Yimo; Khalsa, Guru; Vishwanath, Suresh; Katzer, Scott; Nepal, Neeraj; Downey, Brian; Muller, David; Meyer, David; Xing, Grace; Jena, Debdeep; ECE Collaboration; AEP Collaboration; MSE Collaboration; NRL Collaboration

We have discovered that ultrathin highly crystalline Nb2N layers grown epitaxially (by MBE) on SiC and integrated with AlN and GaN heterostructures are high-quality superconductors with transition temperatures from 9-13 K. The out-of-plane critical magnetic fields are found to be 14 Tesla range, and the critical current density is 4*1E5 A/cm2 at 5 K. Preliminary in-plane magnetotransport measurements on 4 nm thin films indicate a significantly high critical magnetic field exceeding 40 T. Since Nb2N superconducting layers can be epitaxially integrated with GaN, AlN, and AlGaN, we also demonstrate Nb2N superconductivity in a layer located beneath an N-polar GaN high-electron-mobility transistor (HEMT) heterostructure that uses a 2DEG channel as a microwave amplifier; such a demonstration illustrates the potential emergence of a new paradigm where an all-epitaxial III-N/Nb2N platform could serve as the basis for microwave qubits to power quantum computation as well as quantum communications.

High-power AlGaN-based near-ultraviolet light-emitting diodes grown on Si(111)

NASA Astrophysics Data System (ADS)

Li, Zengcheng; Liu, Legong; Huang, Yingnan; Sun, Qian; Feng, Meixin; Zhou, Yu; Zhao, Hanmin; Yang, Hui

2017-07-01

High-power AlGaN-based 385 nm near-ultraviolet light-emitting diodes (UVA-LEDs) grown on Si(111) substrates are reported. The threading dislocation (TD) density of AlGaN was reduced by employing an Al-composition step-graded AlN/AlGaN multilayer buffer. V-shaped pits were intentionally incorporated into the active region to screen the carriers from the nonradiative recombination centers (NRCs) around the TDs and to facilitate hole injection. The light extraction efficiency was enhanced by the surface roughening of a thin-film (TF) vertical chip structure. The as-fabricated TF-UVA-LED exhibited a light output power of 960 mW at 500 mA, corresponding to an external quantum efficiency of 59.7%.

Performance Analysis of GaN Capping Layer Thickness on GaN/AlGaN/GaN High Electron Mobility Transistors.

PubMed

Sharma, N; Periasamy, C; Chaturvedi, N

2018-07-01

In this paper, we present an investigation of the impact of GaN capping layer and AlGaN layer thickness on the two-dimensional (2D)-electron mobility and the carrier concentration which was formed close to the AlGaN/GaN buffer layer for Al0.25Ga0.75N/GaN and GaN/Al0.25Ga0.75N/GaN heterostructures deposited on sapphire substrates. The results of our analysis clearly indicate that expanding the GaN capping layer thickness from 1 nm to 100 nm prompts an increment in the electron concentration at hetero interface. As consequence of which drain current was additionally increments with GaN cap layer thicknesses, and eventually saturates at approximately 1.85 A/mm for capping layer thickness greater than 40 nm. Interestingly, for the same structure, the 2D-electron mobility, decrease monotonically with GaN capping layer thickness, and saturate at approximately 830 cm2/Vs for capping layer thickness greater than 50 nm. A device with a GaN cap layer didn't exhibit gate leakage current. Furthermore, it was observed that the carrier concentration was first decrease 1.03 × 1019/cm3 to 6.65 × 1018/cm3 with AlGaN Layer thickness from 5 to 10 nm and after that it increases with the AlGaN layer thickness from 10 to 30 nm. The same trend was followed for electric field distributions. Electron mobility decreases monotonically with AlGaN layer thickness. Highest electron mobility 1354 cm2/Vs were recorded for the AlGaN layer thickness of 5 nm. Results obtained are in good agreement with published experimental data.

Fabrication and characterization of AlN metal-insulator-semiconductor grown Si substrate

NASA Astrophysics Data System (ADS)

Mahyuddin, A.; Azrina, A.; Mohd Yusoff, M. Z.; Hassan, Z.

2017-11-01

An experimental investigation was conducted to explore the effect of inserting a single AlGaN interlayer between AlN epilayer and GaN/AlN heterostructures on Si (111) grown by molecular beam epitaxy (MBE). It is confirmed from the scanning electron microscopy (SEM) that the AlGaN interlayer has a remarkable effect on reducing the tensile stress and dislocation density in AlN top layer. Capacitance-voltage (C-V) measurements were conducted to study the electrical properties of AlN/GaN heterostructures. While deriving the findings through the calculation it is suggested that the AlGaN interlayer can significantly reduce the value of effective oxide charge density and total effective number of charges per unit area which are 1.37 × 10-6C/cm2 and 8.55 × 1012cm-2, respectively.

Inductively coupled BCl 3/Cl 2 /Ar plasma etching of Al-rich AlGaN

DOE PAGES

Douglas, Erica A.; Sanchez, Carlos A.; Kaplar, Robert J.; ...

2016-12-01

Varying atomic ratios in compound semiconductors is well known to have large effects on the etching properties of the material. The use of thin device barrier layers, down to 25 nm, adds to the fabrication complexity by requiring precise control over etch rates and surface morphology. The effects of bias power and gas ratio of BCl 3 to Cl 2 for inductively coupled plasma etching of high Al content AlGaN were contrasted with AlN in this study for etch rate, selectivity, and surface morphology. Etch rates were greatly affected by both bias power and gas chemistry. Here we detail themore » effects of small variations in Al composition for AlGaN and show substantial changes in etch rate with regards to bias power as compared to AlN.« less

Improved performance in vertical GaN Schottky diode assisted by AlGaN tunneling barrier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cao, Y.; Chu, R.; Li, R.

2016-03-14

In a vertical GaN Schottky barrier diode, the free electron concentration n in the 6-μm-thick drift layer was found to greatly impact the diode reverse leakage current, which increased from 2.1 × 10{sup −7} A to 3.9 × 10{sup −4} A as n increased from 7.5 × 10{sup 14 }cm{sup −3} to 6.3 × 10{sup 15 }cm{sup −3} at a reverse bias of 100 V. By capping the drift layer with an ultrathin 5-nm graded AlGaN layer, reverse leakage was reduced by more than three orders of magnitude with the same n in the drift layer. We attribute this to the increased Schottky barrier height with the AlGaN at the surface. Meanwhile, themore » polarization field within the graded AlGaN effectively shortened the depletion depth, which led to the formation of tunneling current at a relatively small forward bias. The turn-on voltage in the vertical Schottky diodes was reduced from 0.77 V to 0.67 V—an advantage in reducing conduction loss in power switching applications.« less

Growth and Implementation of Carbon-Doped AlGaN Layers for Enhancement-Mode HEMTs on 200 mm Si Substrates

NASA Astrophysics Data System (ADS)

Su, Jie; Posthuma, Niels; Wellekens, Dirk; Saripalli, Yoga N.; Decoutere, Stefaan; Arif, Ronald; Papasouliotis, George D.

2016-12-01

We are reporting the growth of AlGaN based enhancement-mode high electron mobility transistors (HEMTs) on 200 mm silicon (111) substrates using a single wafer metalorganic chemical vapor deposition reactor. It is found that TMAl pre-dosing conditions are critical in controlling the structural quality, surface morphology, and wafer bow of the HEMT stack. Optimal structural quality and pit-free surface are demonstrated for AlGaN HEMTs with pre-dosing temperature at 750°C. Intrinsically, carbon-doped AlGaN, is used as the current blocking layer in the HEMT structures. The lateral buffer breakdown and device breakdown characteristics, reach 400 V at a leakage current of 1 μA/mm measured at 150°C. The fabricated HEMT devices, with a Mg doped p-GaN gate layer, are operating in enhancement mode reaching a positive threshold voltage of 2-2.5 V, a low on-resistance of 10.5 Ω mm with a high drain saturation current of 0.35 A/mm, and a low forward bias gate leakage current of 0.5 × 10-6 A/mm ( V gs = 7 V). Tight distribution of device parameters across the 200 mm wafers and over repeat process runs is observed.

AlGaN UV LED and Photodiodes Radiation Hardness and Space Qualifications and Their Applications in Space Science and High Energy Density Physics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, K. X.

2011-05-31

This presentation provides an overview of robust, radiation hard AlGaN optoelectronic devices and their applications in space exploration & high energy density physics. Particularly, deep UV LED and deep UV photodiodes are discussed with regard to their applications, radiation hardness and space qualification. AC charge management of UV LED satellite payload instruments, which were to be launched in late 2012, is covered.

Asymmetrical design for non-relaxed near-UV AlGaN/GaN distributed Bragg reflectors

NASA Astrophysics Data System (ADS)

Moudakir, T.; Abid, M.; Doan, B.-T.; Demarly, E.; Gautier, S.; Orsal, G.; Jacquet, J.; Ougazzaden, A.; Genty, F.

2010-10-01

Towards the development of high efficient GaN-based Vertical Cavity devices, the fabrication of cracks-free high reflective semiconductor mirrors is still an issue. For near-UV operating devices, one of the best solution is the use of AlGaN/GaN materials family. With a relatively high Al molar fraction in AlGaN, a large enough index contrast can be achieved to fabricate high reflectivity mirrors. However, the lattice mismatch between AlGaN and GaN increases with the Al molar fraction and induces a lot of cracks in the structure which affect its optical and electrical properties. Moreover, for a regrowth of an active layer on the top of the mirror, it is necessary to suppress crack generations to achieve a smooth surface. In this work, asymmetrical designs were investigated for the modeling of fully-strained AlGaN/GaN distributed Bragg Reflectors with crack-free surfaces. First, the critical thickness of MOVPE-grown AlGaN on GaN-on-sapphire templates was experimentally determined and modeled. Then, several AlGaN/GaN mirrors with various Al molar fractions and asymmetry factors were simulated demonstrating that non relaxed DBRs could be obtained with adequate parameters. Finally, it has also been shown that there is a best suited Al molar fraction in AlGaN for each DBR centering wavelength.

AlGaN/GaN heterostructures with an AlGaN layer grown directly on reactive-ion-etched GaN showing a high electron mobility (>1300 cm2 V-1 s-1)

NASA Astrophysics Data System (ADS)

Yamamoto, Akio; Makino, Shinya; Kanatani, Keito; Kuzuhara, Masaaki

2018-04-01

In this study, the metal-organic-vapor-phase-epitaxial growth behavior and electrical properties of AlGaN/GaN structures prepared by the growth of an AlGaN layer on a reactive-ion-etched (RIE) GaN surface without regrown GaN layers were investigated. The annealing of RIE-GaN surfaces in NH3 + H2 atmosphere, employed immediately before AlGaN growth, was a key process in obtaining a clean GaN surface for AlGaN growth, that is, in obtaining an electron mobility as high as 1350 cm2 V-1 s-1 in a fabricated AlGaN/RIE-GaN structure. High-electron-mobility transistors (HEMTs) were successfully fabricated with AlGaN/RIE-GaN wafers. With decreasing density of dotlike defects observed on the surfaces of AlGaN/RIE-GaN wafers, both two-dimensional electron gas properties of AlGaN/RIE-GaN structures and DC characteristics of HEMTs were markedly improved. Since dotlike defect density was markedly dependent on RIE lot, rather than on growth lot, surface contaminations of GaN during RIE were believed to be responsible for the formation of dotlike defects and, therefore, for the inferior electrical properties.

234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Liu, Cheng; Ooi, Yu Kee; Islam, S. M.; Xing, Huili Grace; Jena, Debdeep; Zhang, Jing

2018-01-01

Deep ultraviolet (DUV) AlN-delta-GaN quantum well (QW) light-emitting diodes (LEDs) with emission wavelengths of 234 nm and 246 nm are proposed and demonstrated in this work. Our results reveal that the use of AlN-delta-GaN QW with ˜1-3 monolayer GaN delta-layer can achieve a large transverse electric (TE)-polarized spontaneous emission rate instead of transverse magnetic-polarized emission, contrary to what is observed in conventional AlGaN QW in the 230-250 nm wavelength regime. The switching of light polarization in the proposed AlN-delta-GaN QW active region is attributed to the rearrangement of the valence subbands near the Γ-point. The light radiation patterns obtained from angle-dependent electroluminescence measurements for the Molecular Beam Epitaxy (MBE)-grown 234 nm and 246 nm AlN-delta-GaN QW LEDs show that the photons are mainly emitted towards the surface rather than the edge, consistent with the simulated patterns achieved by the finite-difference time-domain modeling. The results demonstrate that the proposed AlN-delta-GaN QWs would potentially lead to high-efficiency TE-polarized surface-emitting DUV LEDs.

Growth of AlGaN under the conditions of significant gallium evaporation: Phase separation and enhanced lateral growth

NASA Astrophysics Data System (ADS)

Mayboroda, I. O.; Knizhnik, A. A.; Grishchenko, Yu. V.; Ezubchenko, I. S.; Zanaveskin, Maxim L.; Kondratev, O. A.; Presniakov, M. Yu.; Potapkin, B. V.; Ilyin, V. A.

2017-09-01

The growth kinetics of AlGaN in NH3 MBE under significant Ga desorption was studied. It was found that the addition of gallium stimulates 2D growth and provides better morphology of films compared to pure AlN. The effect was experimentally observed at up to 98% desorption of the impinging gallium. We found that under the conditions of significant thermal desorption, larger amounts of gallium were retained at lateral boundaries of 3D surface features than at flat terraces because of the higher binding energy of Ga atoms at specific surface defects. The selective accumulation of gallium resulted in an increase in the lateral growth component through the formation of the Ga-enriched AlGaN phase at boundaries of 3D surface features. We studied the temperature dependence of AlGaN growth rate and developed a kinetic model analytically describing this dependence. As the model was in good agreement with the experimental data, we used it to estimate the increase in the binding energy of Ga atoms at surface defects compared to terrace surface sites using data on the Ga content in different AlGaN phases. We also applied first-principles calculations to the thermodynamic analysis of stable configurations on the AlN surface and then used these surface configurations to compare the binding energy of Ga atoms at terraces and steps. Both first-principles calculations and analytical estimations of the experimental results gave similar values of difference in binding energies; this value is 0.3 eV. Finally, it was studied experimentally whether gallium can act as a surfactant in AlN growth by NH3 MBE at elevated temperatures. Gallium application has allowed us to grow a 300 nm thick AlN film with a RMS surface roughness of 2.2 Å over an area of 10 × 10 μm and a reduced density of screw dislocations.

Electron mobility in InGaN channel heterostructure field effect transistor structures with different barriers

NASA Astrophysics Data System (ADS)

Xie, J.; Leach, J. H.; Ni, X.; Wu, M.; Shimada, R.; Özgür, Ü.; Morkoç, H.

2007-12-01

InGaN possesses higher electron mobility and velocity than GaN, and therefore is expected to lead to relatively better performances for heterostructure field effect transistors (HFETs). However, the reported mobilities for AlGaN /InGaN HFETs are lower than GaN channel HFETs. To address this issue, we studied the effect of different barriers on the Hall mobility for InGaN channel HFETs grown by metal organic chemical vapor deposition. Unlike the conventional AlGaN barrier, the AlInN barrier can be grown at the same temperature as the InGaN channel layer, alleviating some of the technological roadblocks. Specifically, this avoids possible degradation of the thin InGaN channel during AlGaN growth at high temperatures; and paves the way for better interfaces. An undoped In0.18Al0.82N/AlN/In0.04Ga0.96N HFET structure exhibited a μH=820cm2/Vs, with a ns=2.12×1013cm-2 at room temperature. Moreover, with an In-doped AlGaN barrier, namely, Al0.24In0.01Ga0.75N, grown at 900°C, the μH increased to 1230cm2/Vs with a ns of 1.09×1013cm-2 for a similar InGaN channel. Furthermore, when the barrier was replaced by Al0.25Ga0.75N grown at 1030°C, μH dropped to 870cm2/Vs with ns of 1.26×1013cm-2 at room temperature. Our results suggest that to fully realize the potential of the InGaN channel HFETs, AlInN or AlInGaN should be used as the barrier instead of the conventional AlGaN barrier.

Evolution of AlGaN deep level defects as a function of alloying and compositional grading and resultant impact on electrical conductivity

DOE PAGES

Armstrong, Andrew M.; Allerman, Andrew A.

2017-07-24

AlGaN:Si epilayers with uniform Al compositions of 60%, 70%, 80%, and 90% were grown by metal-organic vapor phase epitaxy along with a compositionally graded, unintentionally doped (UID) AlGaN epilayer with the Al composition varying linearly between 80% and 100%. The resistivity of AlGaN:Si with a uniform composition increased significantly for the Al content of 80% and greater, whereas the graded UID-AlGaN film exhibited resistivity equivalent to 60% and 70% AlGaN:Si owing to polarization-induced doping. Deep level defect studies of both types of AlGaN epilayers were performed to determine why the electronic properties of uniform-composition AlGaN:Si degraded with increased Al content,more » while the electronic properties of graded UID-AlGaN did not. The deep level density of uniform-composition AlGaN:Si increased monotonically and significantly with the Al mole fraction. Conversely, graded-UID AlGaN had the lowest deep level density of all the epilayers despite containing the highest Al composition. These findings indicate that Si doping is an impetus for point defect incorporation in AlGaN that becomes stronger with the increasing Al content. However, the increase in deep level density with the Al content in uniform-composition AlGaN:Si was small compared to the increase in resistivity. This implies that the primary cause for increasing resistivity in AlGaN:Si with the increasing Al mole fraction is not compensation by deep levels but rather increasing activation energy for the Si dopant. As a result, the graded UID-AlGaN films maintained low resistivity because they do not rely on thermal ionization of Si dopants.« less

Evolution of AlGaN deep level defects as a function of alloying and compositional grading and resultant impact on electrical conductivity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Armstrong, Andrew M.; Allerman, Andrew A.

AlGaN:Si epilayers with uniform Al compositions of 60%, 70%, 80%, and 90% were grown by metal-organic vapor phase epitaxy along with a compositionally graded, unintentionally doped (UID) AlGaN epilayer with the Al composition varying linearly between 80% and 100%. The resistivity of AlGaN:Si with a uniform composition increased significantly for the Al content of 80% and greater, whereas the graded UID-AlGaN film exhibited resistivity equivalent to 60% and 70% AlGaN:Si owing to polarization-induced doping. Deep level defect studies of both types of AlGaN epilayers were performed to determine why the electronic properties of uniform-composition AlGaN:Si degraded with increased Al content,more » while the electronic properties of graded UID-AlGaN did not. The deep level density of uniform-composition AlGaN:Si increased monotonically and significantly with the Al mole fraction. Conversely, graded-UID AlGaN had the lowest deep level density of all the epilayers despite containing the highest Al composition. These findings indicate that Si doping is an impetus for point defect incorporation in AlGaN that becomes stronger with the increasing Al content. However, the increase in deep level density with the Al content in uniform-composition AlGaN:Si was small compared to the increase in resistivity. This implies that the primary cause for increasing resistivity in AlGaN:Si with the increasing Al mole fraction is not compensation by deep levels but rather increasing activation energy for the Si dopant. As a result, the graded UID-AlGaN films maintained low resistivity because they do not rely on thermal ionization of Si dopants.« less

Refractive Index of III-metal-polar and N-polar AlGaN Waveguides Grown by Metal Organic Chemical Vapor Deposition

DTIC Science & Technology

2013-06-03

traditional birefringent materials is the wide bandgap semiconductor AlGaN. This semiconductor belongs to the 6 mm point group, and thus, has five non...effi- ciency of the SHG structure. As the two different polar surfa- ces incorporate point defects at a different rate during growth,25,26 the...diffraction in a triple axis geometry to determine the c-lattice parameter through the use of the (002) symmetric reflection and relating it to com

Ohmic contacts to Al-rich AlGaN heterostructures

DOE PAGES

Douglas, E. A.; Reza, S.; Sanchez, C.; ...

2017-06-06

Due to the ultra-wide bandgap of Al-rich AlGaN, up to 5.8 eV for the structures in this study, obtaining low resistance ohmic contacts is inherently difficult to achieve. A comparative study of three different fabrication schemes is presented for obtaining ohmic contacts to an Al-rich AlGaN channel. Schottky-like behavior was observed for several different planar metallization stacks (and anneal temperatures), in addition to a dry-etch recess metallization contact scheme on Al 0.85Ga 0.15N/Al 0.66Ga 0.34N. However, a dry etch recess followed by n +-GaN regrowth fabrication process is reported as a means to obtain lower contact resistivity ohmic contacts onmore » a Al 0.85Ga 0.15N/Al 0.66Ga 0.34N heterostructure. In conclusion, specific contact resistivity of 5×10 -3 Ω cm 2 was achieved after annealing Ti/Al/Ni/Au metallization.« less

Deep Ultraviolet Light Emitters Based on (Al,Ga)N/GaN Semiconductor Heterostructures

NASA Astrophysics Data System (ADS)

Liang, Yu-Han

Deep ultraviolet (UV) light sources are useful in a number of applications that include sterilization, medical diagnostics, as well as chemical and biological identification. However, state-of-the-art deep UV light-emitting diodes and lasers made from semiconductors still suffer from low external quantum efficiency and low output powers. These limitations make them costly and ineffective in a wide range of applications. Deep UV sources such as lasers that currently exist are prohibitively bulky, complicated, and expensive. This is typically because they are constituted of an assemblage of two to three other lasers in tandem to facilitate sequential harmonic generation that ultimately results in the desired deep UV wavelength. For semiconductor-based deep UV sources, the most challenging difficulty has been finding ways to optimally dope the (Al,Ga)N/GaN heterostructures essential for UV-C light sources. It has proven to be very difficult to achieve high free carrier concentrations and low resistivities in high-aluminum-containing III-nitrides. As a result, p-type doped aluminum-free III-nitrides are employed as the p-type contact layers in UV light-emitting diode structures. However, because of impedance-mismatch issues, light extraction from the device and consequently the overall external quantum efficiency is drastically reduced. This problem is compounded with high losses and low gain when one tries to make UV nitride lasers. In this thesis, we provide a robust and reproducible approach to resolving most of these challenges. By using a liquid-metal-enabled growth mode in a plasma-assisted molecular beam epitaxy process, we show that highly-doped aluminum containing III-nitride films can be achieved. This growth mode is driven by kinetics. Using this approach, we have been able to achieve extremely high p-type and n-type doping in (Al,Ga)N films with high aluminum content. By incorporating a very high density of Mg atoms in (Al,Ga)N films, we have been able to show, by temperature-dependent photoluminescence, that the activation energy of the acceptors is substantially lower, thus allowing a higher hole concentration than usual to be available for conduction. It is believed that the lower activation energy is a result of an impurity band tail induced by the high Mg concentration. The successful p-type doping of high aluminum-content (Al,Ga)N has allowed us to demonstrate operation of deep ultraviolet LEDs emitting at 274 nm. This achievement paves the way for making lasers that emit in the UV-C region of the spectrum. In this thesis, we performed preliminary work on using our structures to make UV-C lasers based on photonic crystal nanocavity structures. The nanocavity laser structures show that the threshold optical pumping power necessary to reach lasing is much lower than in conventional edge-emitting lasers. Furthermore, the photonic crystal nanocavity structure has a small mode volume and does not need mirrors for optical feedback. These advantages significantly reduce material loss and eliminate mirror loss. This structure therefore potentially opens the door to achieving efficient and compact lasers in the UV-C region of the spectrum.

Impact of open-core threading dislocations on the performance of AlGaN metal-semiconductor-metal photodetectors

NASA Astrophysics Data System (ADS)

Walde, S.; Brendel, M.; Zeimer, U.; Brunner, F.; Hagedorn, S.; Weyers, M.

2018-04-01

The influence of open-core threading dislocations on the bias-dependent external quantum efficiency (EQE) of bottom-illuminated Al0.5Ga0.5N/AlN metal-semiconductor-metal (MSM) photodetectors (PDs) is presented. These defects originate at the Al0.5Ga0.5N/AlN interface and terminate on the Al0.5Ga0.5N surface as hexagonal prisms. They work as electrically active paths bypassing the Al0.5Ga0.5N absorber layer and therefore alter the behavior of the MSM PDs under bias voltage. This effect is included in the model of carrier collection in the MSM PDs showing a good agreement with the experimental data. While such dislocations usually limit the device performance, the MSM PDs benefit by high EQE at a reduced bias voltage while maintaining a low dark current.

Growth of GaN nanostructures with polar and semipolar orientations for the fabrication of UV LEDs

NASA Astrophysics Data System (ADS)

Brault, Julien; Damilano, Benjamin; Courville, Aimeric; Leroux, Mathieu; Kahouli, Abdelkarim; Korytov, Maxim; Vennéguès, Philippe; Randazzo, Gaetano; Chenot, Sébastien; Vinter, Borge; De Mierry, Philippe; Massies, Jean; Rosales, Daniel; Bretagnon, Thierry; Gil, Bernard

2014-03-01

(Al,Ga)N light emitting diodes (LEDs), emitting over a large spectral range from 360 nm (GaN) down to 210 nm (AlN), have been successfully fabricated over the last decade. Clear advantages compared to the traditional mercury lamp technology (e.g. compactness, low-power operation, lifetime) have been demonstrated. However, LED efficiencies still need to be improved. The main problems are related to the structural quality and the p-type doping efficiency of (Al,Ga)N. Among the current approaches, GaN nanostructures, which confine carriers along both the growth direction and the growth plane, are seen as a solution for improving the radiative recombination efficiency by strongly reducing the impact of surrounding defects. Our approach, based on a 2D - 3D growth mode transition in molecular beam epitaxy, can lead to the spontaneous formation of GaN nanostructures on (Al,Ga)N over a broad range of Al compositions. Furthermore, the versatility of the process makes it possible to fabricate nanostructures on both (0001) oriented "polar" and (11 2 2) oriented "semipolar" materials. We show that the change in the crystal orientation has a strong impact on the morphological and optical properties of the nanostructures. The influence of growth conditions are also investigated by combining microscopy (SEM, TEM) and photoluminescence techniques. Finally, their potential as UV emitters will be discussed and the performances of GaN / (Al,Ga)N nanostructure-based LED demonstrators are presented.

AlGaN materials for semiconductor sensors and emitters in 200- to 365-nm range

NASA Astrophysics Data System (ADS)

Usikov, Alexander S.; Shapvalova, Elizaveta V.; Melnik, Yuri V.; Ivantsov, Vladimir A.; Dmitriev, Vladimir A.; Collins, Charles J.; Sampath, Anand V.; Garrett, Gregory A.; Shen, Paul H.; Wraback, Michael

2004-12-01

In this paper we report on the fabrication and characterization of GaN, AlGaN, and AlN layers grown by hydride vapor phase epitaxy (HVPE). The layers were grown on 2-inch and 4-inch sapphire and 2-inch silicon carbide substrates. Thickness of the GaN layers was varied from 2 to 80 microns. Surface roughness, Rms, for the smoothest GaN layers was less than 0.5 nm, as measured by AFM using 10 μm x 10 μm scans. Background Nd-Na concentration for undoped GaN layers was less than 1x1016 cm-3. For n-type GaN layers doped with Si, concentration Nd-Na was controlled from 1016 to 1019 cm-3. P-type GaN layers were fabricated using Mg doping with concentration Na-Nd ranging from 4x1016 to 3x1018 cm-3, for various samples. Zn doping also resulted in p-type GaN formation with concnetration ND-NA in the 1017 cm-3 range. UV transmission, photoluminescence, and crystal structure of AlGaN layers with AlN concentration up to 85 mole.% were studied. Dependence of optical band gap on AlGaN alloy composition was measured for the whole composition range. Thick (up to 75 microns) crack-free AlN layers were grown on SiC substrates. Etch pit density for such thick AlN layers was in the 107 cm-2 range.

Point Defect Identification and Management for Sub-300 nm Light Emitting Diodes and Laser Diodes Grown on Bulk AlN Substrates

NASA Astrophysics Data System (ADS)

Bryan, Zachary A.

The identification and role of point defects in AlN thin films and bulk crystals are studied. High-resolution photoluminescence studies on doped and undoped c-plane and mplane homoepitaxial films reveal several sharp donor-bound exciton (DBX) peaks with a full width at half maximum (FWHM) as narrow as 500 microeV. Power dependent photoluminescence distinguish DBXs tied to the Gamma5 free exciton (FX) from those tied to the Gamma 1 FX. The DBX transitions at 6.012 and 6.006 eV are identified as originating from the neutral-donor-silicon (Si0X) and neutral-donor-oxygen (O0X) respectively. With multiple DBXs and their respective two electron satellite peaks identified, a Haynes Rule plot is developed for the first time for AlN. While high quality AlN homoepitaxy is achievable by metalorganic chemical vapor deposition (MOCVD) growth, current commercially available AlN wafers are typically hindered by the presence of a broad below bandgap optical absorption band centered at 4.7 eV ( 265 nm) with an absorption coefficient of well over 1000 cm-1. Through density functional theory calculations, it is determined that substitutional carbon on the nitrogen site causes this absorption. Further studies reveal a donor-acceptor pair (DAP) recombination between substitutional carbon on the nitrogen site and a nitrogen vacancy with an emission energy of 2.8 eV. Lastly, co-doping bulk AlN with Si or O is explored and found to suppress the unwanted 4.7 eV absorption band. A novel Fermi level control scheme for point defect management during MOCVD growth in III-nitride materials by above bandgap illumination is proposed and implemented for Mg-doped GaN and Si-doped AlGaN materials as a proof of concept. The point defect control scheme uses photo-generated minority charge carriers to control the electro-chemical potential of the system and increase the formation energies of electrically charged compensating point defects. The result is a lower incorporation of compensating point defects in the films due to the increase in their formation energies during growth. This method improved the electrical properties of p-type GaN and n-type AlGaN and reduced stress thereby preventing films from cracking. The optical and structural quality of high Al-content AlGaN multiple quantum wells, light emitting diodes (LEDs), and laser diodes (LDs) grown on single crystalline AlN substrates are investigated. The use of bulk AlN substrates enabled the undoubtable distinction between the effect of growth conditions, such as V/III ratio, on the optical quality from the influence of dislocations. At a high V/III ratio and the proper MQW design, a record high IQE of 80% at a carrier density of 1018 cm-3 is achieved at 258 nm. With these structures, true sub-300 nm lasing is realized and distinguished from super luminescence for the first time by the observations of lasing characteristics such as longitudinal cavity modes, 100% polarized emission, and an elliptically shaped far-field pattern. A transverse electric to transverse magnetic polarization crossover at 245 nm is found. Lasing is observed in both asymmetric and symmetric waveguide structures with and without the presence of Si- and Mg-doping in the waveguide layer. The lowest measurable lasing threshold is 50 kW/cm2 and potentially a lower threshold is obtained in a symmetric waveguide structure while the lowest measured lasing wavelength is 237 nm. Gain measurements reveal a net modal gain greater than 100 cm-1 which is the highest reported value for sub-300 nm lasers. Furthermore, a lowest reported FWHM of 0.012 nm is observed indicating the high quality of the laser structure. Finally, electrically injected LED and LD structures are studied showing great potential for the realization of the first sub-300 nm LD.

Dual Band Deep Ultraviolet AlGaN Photodetectors

NASA Technical Reports Server (NTRS)

Aslam, S.; Miko, L.; Stahle, C.; Franz, D.; Pugel, D.; Guan, B.; Zhang, J. P.; Gaska, R.

2007-01-01

We report on the design, fabrication and characterization of a back-illuminated voltage bias selectable dual-band AlGaN UV photodetector. The photodetector can separate UVA and W-B band radiation by bias switching a two terminal n-p-n homojunction structure that is fabricated in the same pixel. When a forward bias is applied between the top and bottom electrodes, the detector can sense UV-A and reject W-B band radiation. Alternatively, under reverse bias, the photodetector can sense UV-B and reject UV-A band radiation.

Completely transparent ohmic electrode on p-type AlGaN for UV LEDs with core-shell Cu@alloy nanosilk network (Conference Presentation)

NASA Astrophysics Data System (ADS)

Cai, Duanjun; Wang, Huachun; Huang, Youyang; Wu, Chenping; Chen, Xiaohong; Gao, Na; Wei, Tongbo T.; Wang, Junxi; Li, Shuping; Kang, Junyong

2016-09-01

Metal nanowire networks hold a great promise, which have been supposed the only alternative to ITO as transparent electrodes for their excellent performance in touch screen, LED and solar cell. It is well known that the difficulty in making transparent ohmic electrode to p-type high-Al-content AlGaN conducting layer has highly constrained the further development of UV LEDs. On the IWN-2014, we reported the ohmic contact to n, p-GaN with direct graphene 3D-coated Cu nanosilk network and the fabrication of complete blue LED. On the ICNS-2015, we reported the ohmic contact to n-type AlGaN conducting layer with Cu@alloy nanosilk network. Here, we further demonstrate the latest results that a novel technique is proposed for fabricating transparent ohmic electrode to high-Al-content AlGaN p-type conducting layer in UV LEDs using Cu@alloy core-shell nanosilk network. The superfine copper nanowires (16 nm) was synthesized for coating various metals such as Ni, Zn, V or Ti with different work functions. The transmittance showed a high transparency (> 90%) over a broad wavelength range from 200 to 3000 nm. By thermal annealing, ohmic contact was achieved on p-type Al0.5Ga0.5N layer with Cu@Ni nanosilk network, showing clearly linear I-V curve. By skipping the p-type GaN cladding layer, complete UV LED chip was fabricated and successfully lit with bright emission at 276 nm.

Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

PubMed Central

Hu, Hongpo; Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Gui, Chengqun; Liu, Sheng

2017-01-01

We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs) and ex-situ sputtered AlN NL. The threading dislocation (TD) densities in GaN-based UV LEDs with GaN/AlGaN/sputtered AlN NLs were determined by high-resolution X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM), which revealed that the TD density in UV LED with AlGaN NL was the highest, whereas that in UV LED with sputtered AlN NL was the lowest. The light output power (LOP) of UV LED with AlGaN NL was 18.2% higher than that of UV LED with GaN NL owing to a decrease in the absorption of 375 nm UV light in the AlGaN NL with a larger bandgap. Using a sputtered AlN NL instead of the AlGaN NL, the LOP of UV LED was further enhanced by 11.3%, which is attributed to reduced TD density in InGaN/AlInGaN active region. In the sputtered AlN thickness range of 10–25 nm, the LOP of UV LED with 15-nm-thick sputtered AlN NL was the highest, revealing that optimum thickness of the sputtered AlN NL is around 15 nm. PMID:28294166

The metalorganic chemical vapor deposition of III-V nitrides for optoelectronic device applications

NASA Astrophysics Data System (ADS)

Grudowski, Paul Alexander

Nitride-based light-emitting diodes (LEDs) and laser diodes are important for large-area LED displays, flat-panel displays, traffic signals, and optical data storage, due to their characteristic ultraviolet and visible light emission. However, much of the research and development addressing material related problems is recent. The room-temperature continuous wave (CW) operation of nitride-based laser diodes remains a major milestone because the material quality requirements for these devices are extremely high. This study investigates nitride material development by the metalorganic chemical vapor deposition (MOCVD) and characterization of GaN, AlGaN, and InGaN, and by qualifying these materials with fabricated devices. The ultimate goal was to develop a working laser diode. The nitride epitaxial films were characterized by 300K Hall effect, x-ray diffraction (XRD), photoluminescence (PL), cathodoluminescence (CL), secondary ion mass spectroscopy (SIMS), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). GaN grown heteroepitaxially on (0001) sapphire substrates was first optimized. A low-temperature GaN nucleation layer was developed that gave subsequent high-temperature GaN layers with low background carrier concentrations (n < 1×10sp{17}\\ cmsp{-3}). Intentional p-type hole concentrations up to 2× 10sp{18} cmsp{-3} and n-type electron concentrations up to 1× 10sp{19} cmsp{-3} were achieved at 300K with magnesium and silicon, respectively. The ternary alloy Insb{x}Gasb{1-x}N was grown with indium compositions up to x = 0.25. These films exhibited strong and narrow 300K PL bandedge peaks. Multiple-quantum-well structures with Insb{0.13}Gasb{0.87}N wells and Insb{0.03}Gasb{0.97}N barriers were grown and gave enhanced PL intensity compared to single InGaN layers. Modulation-doped MQW's produced enhanced PL intensity compared to uniformly-doped MQW's. 300K photopumping experiments produced stimulated emission from a five-period MQW. Light-emitting device structures comprised of InGaN MQW active regions and p-type and n-type GaN contact layers and AlGaN confinement layers were grown and fabricated. LED's showed bright emission at a wavelength of 400 nm. While optically pumped lasers were demonstrated, no injection lasing action was achieved in these devices. GaN grown by selective area lateral epitaxial overgrowth (SALEO) has reduced dislocation defect density and, therefore, may prove to be a promising substrate for nearly defect-free device structures. Plan-view and cross-sectional CL was used to compare spatial inhomogeneities in the bandedge luminescence.

Determination of the strain distribution for the Si3N4 passivated AlGaN/AlN/GaN heterostructure field-effect transistors

NASA Astrophysics Data System (ADS)

Fu, Chen; Lin, Zhaojun; Liu, Yan; Cui, Peng; Lv, Yuanjie; Zhou, Yang; Dai, Gang; Luan, Chongbiao

2017-11-01

A method to determine the strain distribution of the AlGaN barrier layer after the device fabrication and the passivation process has been presented. By fitting the calculated parasitic source access resistance with the measured ones for the AlGaN/AlN/GaN HFETs and using the polarization Coulomb field scattering theory, the strain variation of the AlGaN barrier layer after the passivation process has been quantitatively studied. The results show that the tensile strain in the access regions of the AlGaN barrier layer has been increased by 4.62% for the 250 nm-Si3N4 passivated device, and has been decreased by 2.0% for the 400 nm-Si3N4 passivated device, compared to that of before the passivation, respectively. For the gate region of the two devices, the tensile strain has been decreased by 60.77% and increased by 3.60% after the passivation of different thicknesses, oppositely.

Expected progress based on aluminium galium nitride Focal Plan Array for near and deep Ultraviolet

NASA Astrophysics Data System (ADS)

Reverchon, J.-L.; Robin, K.; Bansropun, S.; Gourdel, Y.; Robo, J.-A.; Truffer, J.-P.; Costard, E.; Brault, J.; Frayssinet, E.; Duboz, J.-Y.

The fast development of nitrides has given the opportunity to investigate AlGaN as a material for ultraviolet detection. A camera based on such a material presents an extremely low dark current at room temperature. It can compete with technologies based on photocathodes, MCP intensifiers, back thinned CCD or hybrid CMOS focal plane arrays for low flux measurements. First, we will present results on focal plane array of 320 × 256 pixels with a pitch of 30 μm. The peak responsivity is tuned from 260 nm to 360 nm in different cameras. All these results are obtained in a standard SWIR supply chaine and with AlGaN Schottky diodes grown on sapphire. We will present here the first attempts to transfer the standard design Schottky photodiodes on from sapphire to silicon substrates. We will show the capability to remove the silicon substrate, to etch the window layer in order to extend the band width to lower wavelength and to maintain the AlGaN membrane integrity.

Status of AlGaN based focal plane array for near UV imaging and strategy to extend this technology to far-UV by substrate removal

NASA Astrophysics Data System (ADS)

Reverchon, Jean-Luc; Gourdel, Yves; Robo, Jean-Alexandre; Truffer, Jean-Patrick; Costard, Eric; Brault, Julien; Duboz, Jean-Yves

2017-11-01

The fast development of nitrides has given the opportunity to investigate AlGaN as a material for ultraviolet detection. Such AlGaN based camera presents an intrinsic spectral selectivity and an extremely low dark current at room temperature. Firstly, we will present results on focal plane array of 320x256 pixels with a pitch of 30μm. The peak responsivity is around 280nm (solar-blind), 310nm and 360nm. These results are obtained in a standard SWIR supply chain (readout circuit, electronics). With the existing near-UV camera grown on sapphire, the short wavelength cutoff is due to a window layer improving the material quality of the active layer. The ultimate shortest wavelength would be 200nm due to sapphire substrate. We present here the ways to transfer the standard design of Schottky photodiodes from sapphire to silicon substrate. We will show the capability to remove the silicon substrate, and etch the window layer in order to extend the band width to lower wavelengths.

Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency

NASA Astrophysics Data System (ADS)

Zhang, Yuewei; Jamal-Eddine, Zane; Akyol, Fatih; Bajaj, Sanyam; Johnson, Jared M.; Calderon, Gabriel; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Hwang, Jinwoo; Rajan, Siddharth

2018-02-01

We report on the high efficiency tunnel-injected ultraviolet light emitting diodes (UV LEDs) emitting at 287 nm. Deep UV LED performance has been limited by the severe internal light absorption in the p-type contact layers and low electrical injection efficiency due to poor p-type conduction. In this work, a polarization engineered Al0.65Ga0.35N/In0.2Ga0.8N tunnel junction layer is adopted for non-equilibrium hole injection to replace the conventionally used direct p-type contact. A reverse-graded AlGaN contact layer is further introduced to realize a low resistance contact to the top n-AlGaN layer. This led to the demonstration of a low tunnel junction resistance of 1.9 × 10-3 Ω cm2 obtained at 1 kA/cm2. Light emission at 287 nm with an on-wafer peak external quantum efficiency of 2.8% and a wall-plug efficiency of 1.1% was achieved. The measured power density at 1 kA/cm2 was 54.4 W/cm2, confirming the efficient hole injection through interband tunneling. With the benefits of the minimized internal absorption and efficient hole injection, a tunnel-injected UV LED structure could enable future high efficiency UV emitters.

Effect of defects on the electrical/optical performance of gallium nitride based junction devices

NASA Astrophysics Data System (ADS)

Ferdous, Mohammad Shahriar

Commercial GaN based electronic and optoelectronic devices possess a high density (107-109 cm-2) of threading dislocations (TDs) because of the large mismatch in the lattice constant and the thermal expansion coefficient between the epitaxial layer structure and the substrate. In spite of these dislocations, high brightness light emitting diodes (LEDs) utilizing InGaN or AlGaN multiple quantum wells (MQWs) and with an external quantum efficiency of more than 40%, have already been achieved. This high external quantum efficiency in the presence of a high density of dislocations has been explained by carrier localization induced by indium fluctuations in the quantum well. TDs have been found to increase the reverse leakage current in InGaN based LEDs and to shorten the operating lifetime of InGaN MQW/GaN/AlGaN laser diodes. Thus it is important that the TD density is further reduced. It remains unclear how the TDs interact with the device to cause the effects mentioned above, hence the careful and precise characterization of threading defects and their effects on the electrical and optical performances of InGaN/GaN MQW LEDs is needed. This investigation will be useful not only from the point of view of device optimization but also to develop a clear understanding of the physical processes associated with TDs and especially with their effect on leakage current. We have employed photoelectrochemical (PEC) etching to accurately measure the dislocation density initially in home-grown GaN-based epitaxial structures and recently in InGaN/GaN MQW LEDs fabricated from commercial grade epitaxial structures that were supplied by our industrial collaborators. Measuring the electrical and electroluminescence (EL) characteristics of these devices has revealed correlations between some aspects of the LED behavior and the TD density, and promises to allow a deeper understanding of the role of threading dislocations to be elucidated. We observed that the LED reverse leakage current increased exponentially, and electroluminescence intensity decreased by 22%, as the TD density in the LEDs increased from 1.7 x 107 cm-2 to 2 x 108 cm-2. Forward voltage remained almost constant with the increase of TD density. A model of carrier conduction via hopping through defect related states, was found to provide an excellent fit to the experimental I-V data and provides a useful basis for understanding carrier conduction in the presence of TDs.

Deep ultraviolet photoluminescence studies of aluminum-rich aluminum gallium nitride and aluminum nitride epilayers and nanostructures

NASA Astrophysics Data System (ADS)

Nepal, Neeraj

Deep ultraviolet (UV) photoluminescence (PL) spectroscopy has been employed to study optical properties of AlGaN alloys, undoped and doped AlN epilayers and nanostructure AlN photonics crystals (PCs). Using a deep UV laser system with an excitation wave length at 197 nm, continuous wave PL, temperature dependent, and time-resolved PL have been carried out on these AlGaN and AlN epilayers and nanostructures. We have measured the compositional and temperature dependence of the energy bandgap of AlxGa1-xN alloys covering the entire alloy range of x, 0 ≤ x ≤ 1 and fitted with the Varshni equation. Varshni coefficients, alpha and beta, in AlGaN alloys have a parabolic dependence with alloy concentration x. Based on the experimental data, an empirical relation was thus obtained for the energy gap of AlGaN alloys for the entire alloy concentration and at any temperature below 800 K. The exciton localization energy in AlxGa1-xN alloys the entire composition range (0 ≤ x ≤ 1) has been measured by fitting the band edge emission peak energy with the Varshni equation. Deviations of the excitonic emission peak energy from the Varshni equation at low temperatures provide directly the exciton localization energies, ELoc in AlGaN alloys. It was found that ELoc increases with x for x ≤ 0.7, and decreases with x for x ≥ 0.8. The relations between the exciton localization energy, the activation energy, and the emission linewidth have been established. It thus provides three different and independent methods to determine the exciton localization energies in AlGaN alloys. Impurity transitions in AlGaN alloys have also been investigated. Continuous wave (CW) PL spectra of Si and undoped AlGaN alloys reveals groups of impurity transitions that have been assigned to the recombination between shallow donors and an isolated triply charged cation-vacancy (VIII)3-, a doubly charged cation-vacancy-complex (VIII-complex)2- , and a singly charged cation-vacancy-complex (VIII-complex) -1. The energy levels of these deep acceptors in AlxGa 1-xN (0 ≤ x ≤ 1) alloys are pinned to a common energy level in the vacuum. AlGaN alloys predominantly exhibiting the bandedge and (V III-complex)1- transitions possess improved conductivities over those emitting predominantly (VIII)3- and (V III-complex)2- related transitions. These results thus answer the very basic question of high resistivity in Al-rich AlGaN alloys. Acceptor doped AlGaN alloys have been studied by deep UV PL. A PL emission line at 6.02 eV has been observed at 10 K in Mg-doped AlN. It is due to the recombination of an exciton bound to the neutral Mg acceptor (I1) with a binding energy, Ebx of 40 meV, which indicates large activation energy of the Mg acceptor. The observed large binding energy of the acceptor-bound exciton is consistent with relatively large binding energy of the Mg acceptor in AlN. With the energy level of 0.51 eV for Mg dopants in AlN, it is interesting and important to study other suitable acceptor dopants for AlN. Growth and optical studies of Zn-doped AlN epilayers has been carried out. The PL spectra of Zn-doped AlN epilayers exhibited two impurity emission lines at 5.40 and 4.50 eV, which were absent in undoped epilayers. They are assigned respectively, to the transitions of free electrons and electrons bound to triply positively charged nitrogen vacancies (0.90 eV deep) to the Zn0 acceptors. It was deduced that the Zn energy level is about 0.74 eV above the valence band edge, which is about 0.23 eV deeper than the Mg energy level in AlN. Nitrogen vacancies are the compensating defects in acceptor doped AlGaN alloys. A nitrogen vacancy (VN) related emission line was also observed in ion-implanted AlN at 5.87 eV and the energy level of singly charged VN1+ is found at 260 meV below the conduction band. As a consequence of large binding energy of VN 1+ as well as high formation energy, VN1+ in AlN cannot contribute significant n-type conductivity, which is consistent with experimental observation. The temperature dependent PL study of the bandedge emissions in GaN and AlN epilayers up to 800 K has been carried out, which reveals two distinctive activation processes. The first process occurring below Tt = 325 K (Tt = 500 K) for GaN (AlN) is due to the activation of free excitons to free carriers, whereas the second occurring above Tt with an activation energy of 0.29 eV (0.3 eV) for GaN (AlN) is believed to be associated with a higher lying conduction band (Gamma3) at about 0.3 eV above the conduction band minimum (Gamma1). These higher lying bands could affect device performance of GaN and AlN at elevated temperatures. Two-dimensional nanostructured AlN photonic crystals (PCs) with a varying periodicity/diameter down to 150 nm/75 nm have also been studied by deep UV PL. With PCs formation, a 20-fold enhancement in the band edge emission intensity at 208 nm over unpatterned AlN epilayer has been observed. The emission intensity increases with the decrease in the lattice constant of the AlN PCs. AlN PCs represent photonic crystals with highest (shortest) bandgap (wavelength) semiconductors, which open up new opportunities for exploring novel physical phenomena in the artificially structured photonic band gap material systems and their applications, particularly in the area of deep UV as well as nano-photonics.

Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth

NASA Astrophysics Data System (ADS)

Wong, Man Hoi; Pei, Yi; Palacios, Tomás; Shen, Likun; Chakraborty, Arpan; McCarthy, Lee S.; Keller, Stacia; DenBaars, Steven P.; Speck, James S.; Mishra, Umesh K.

2007-12-01

Nonalloyed Ohmic contacts on Ga-face n+-GaN/AlGaN/GaN high electron mobility transistor (HEMT) structures typically have significant contact resistance to the two-dimensional electron gas (2DEG) due to the AlGaN barrier. By growing the HEMT structure inverted on the N-face, electrons from the contacts were able to access the 2DEG without going through an AlGaN layer. A low contact resistance of 0.16Ωmm and specific contact resistivity of 5.5×10-7Ωcm2 were achieved without contact annealing on the inverted HEMT structure.

Defect-Enabled Electrical Current Leakage in Ultraviolet Light-Emitting Diodes

DOE PAGES

Moseley, Michael William; Allerman, Andrew A.; Crawford, Mary H.; ...

2015-04-13

The AlGaN materials system offers a tunable, ultra-wide bandgap that is exceptionally useful for high-power electronics and deep ultraviolet optoelectronics. Moseley et al. (pp. 723–726) investigate a structural defect known as an open-core threading dislocation or ''nanopipe'' that is particularly detrimental to devices that employ these materials. Furthermore, an AlGaN thin film was synthesized using metal-organic chemical-vapor deposition. Electrical current leakage is detected at a discrete point using a conductive atomic-force microscope (CAFM). However, no physical feature or abnormality at this location was visible by an optical microscope. The AlGaN thin film was then etched in hot phosphoric acid, andmore » the same location that was previously analyzed was revisited with the CAFM. The point that previously exhibited electrical current leakage had been decorated with a 1.1 μm wide hexagonal pit, which identified the site of electrical current leakage as a nanopipe and allows these defects to be easily observed by optical microscopy. Moreover, with this nanopipe identification and quantification strategy, the authors were able to correlate decreasing ultraviolet light-emitting diode optical output power with increasing nanopipe density.« less

Defect characterization of MOCVD grown AlN/AlGaN films on sapphire substrates by TEM and TKD

NASA Astrophysics Data System (ADS)

O'Connell, J. H.; Lee, M. E.; Westraadt, J.; Engelbrecht, J. A. A.

2018-04-01

High resolution transmission electron microscopy (TEM) has been used to characterize defects structures in AlN/AlGaN epilayers grown by metal-organic chemical vapour deposition (MOCVD) on c-plane sapphire (Al2O3) substrates. The AlN buffer layer was shown to be epitaxially grown on the sapphire substrate with the two lattices rotated relatively through 30°. The AlN layer had a measured thickness of 20-30 nm and was also shown to contain nano-sized voids. The misfit dislocations in the buffer layer have been shown to be pure edge with a spacing of 1.5 nm. TEM characterization of the AlGaN epilayers was shown to contain a higher than expected threading dislocation density of the order 1010 cm-2 as well as the existence of "nanopipes". TEM analysis of the planar lamella for AlGaN has presented evidence for the possibility of columnar growth. The strain and misorientation mapping in the AlGaN epilayer by transmission Kikuchi diffraction (TKD) using the FIB lamella has also been demonstrated to be complimentary to data obtained by TEM imaging.

Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al{sub 2}O{sub 3} in AlGaN/GaN high electron mobility transistors with normally off capability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Capriotti, M., E-mail: mattia.capriotti@tuwien.ac.at; Alexewicz, A.; Fleury, C.

2014-03-17

Using a generalized extraction method, the fixed charge density N{sub int} at the interface between in situ deposited SiN and 5 nm thick AlGaN barrier is evaluated by measurements of threshold voltage V{sub th} of an AlGaN/GaN metal insulator semiconductor high electron mobility transistor as a function of SiN thickness. The thickness of the originally deposited 50 nm thick SiN layer is reduced by dry etching. The extracted N{sub int} is in the order of the AlGaN polarization charge density. The total removal of the in situ SiN cap leads to a complete depletion of the channel region resulting in V{sub th} = +1 V.more » Fabrication of a gate stack with Al{sub 2}O{sub 3} as a second cap layer, deposited on top of the in situ SiN, is not introducing additional fixed charges at the SiN/Al{sub 2}O{sub 3} interface.« less

The management of stress in MOCVD-grown InGaN/GaN LED multilayer structures on Si(1 1 1) substrates

NASA Astrophysics Data System (ADS)

Jiang, Quanzhong; Allsopp, Duncan W. E.; Bowen, Chris R.; Wang, Wang N.

2013-09-01

The tensile stress in light-emitting diode (LED)-on-Si(1 1 1) multilayer structures must be reduced so that it does not compromise the multiple quantum well emission wavelength uniformity and structural stability. In this paper it is shown for non-optimized LED structures grown on Si(1 1 1) substrates that both emission wavelength uniformity and structural stability can be achieved within the same growth process. In order to gain a deeper understanding of the stress distribution within such a structure, cross-sectional Raman and photo-luminescence spectroscopy techniques were developed. It is observed that for a Si:GaN layer grown on a low-temperature (LT) AlN intermediate layer there is a decrease in compressive stress with increasing Si:GaN layer thickness during MOCVD growth which leads to a high level of tensile stress in the upper part of the layer. This may lead to the development of cracks during cooling to room temperature. Such a phenomenon may be associated with annihilation of defects such as dislocations. Therefore, a reduction of dislocation intensity should take place at the early stage of GaN growth on an AlN or AlGaN layer in order to reduce a build up of tensile stress with thickness. Furthermore, it is also shown that a prolonged three dimensional GaN island growth on a LT AlN interlayer for the reduction of dislocations may result in a reduction in the compressive stress in the resulting GaN layer.

Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulation layer

NASA Astrophysics Data System (ADS)

Liu, Chao; Ren, Zhi-Wei; Chen, Xin; Zhao, Bi-Jun; Wang, Xing-Fu; Yin, Yi-An; Li, Shu-Ti

2013-05-01

P-InGaN/p-GaN superlattices (SLs) are developed for a hole accumulation layer (HAL) of a blue light emitting diode (LED). Free hole concentration as high as 2.6 × 1018 cm-3 is achieved by adjusting the Cp2Mg flow rate during the growth of p-InGaN/p-GaN SLs. The p-InGaN/p-GaN SLs with appropriate Cp2Mg flow rates are then incorporated between the multi-quantum well and AlGaN electron blocking layer as an HAL, which leads to the enhancement of light output power by 29% at 200 mA, compared with the traditional LED without such SL HAL. Meanwhile, the efficiency droop is also effectively alleviated in the LED with the SL HAL. The improved performance is attributed to the increased hole injection efficiency, and the reduced electron leakage by inserting the p-type SL HAL.

Dynamics of photogenerated carriers near magnetic field driven quantum phase transition in aperiodic multiple quantum wells

NASA Astrophysics Data System (ADS)

Tito, M. A.; Pusep, Yu A.

2018-01-01

Time-resolved magneto-photoluminescence was employed to study the magnetic field induced quantum phase transition separating two phases with different distributions of electrons over quantum wells in an aperiodic multiple quantum well, embedded in a wide AlGaAs parabolic quantum well. Intensities, broadenings and recombination times attributed to the photoluminescence lines emitted from individual quantum wells of the multiple quantum well structure were measured as a function of the magnetic field near the transition. The presented data manifest themselves to the magnetic field driven migration of the free electrons between the quantum wells of the studied multiple quantum well structure. The observed charge transfer was found to influence the screening of the multiple quantum well and disorder potentials. Evidence of the localization of the electrons in the peripheral quantum wells in strong magnetic field is presented.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Djavid, Mehrdad; Mi, Zetian, E-mail: zetian.mi@mcgill.ca

The performance of conventional AlGaN deep ultraviolet light emitting diodes has been limited by the extremely low light extraction efficiency (<10%), due to the unique transverse magnetic (TM) polarized light emission. Here, we show that, by exploiting the lateral side emission, the extraction efficiency of TM polarized light can be significantly enhanced in AlGaN nanowire structures. Using the three-dimensional finite-difference time domain simulation, we demonstrate that the nanowire structures can be designed to inhibit the emission of guided modes and redirect trapped light into radiated modes. A light extraction efficiency of more than 70% can, in principle, be achieved bymore » carefully optimizing the nanowire size, nanowire spacing, and p-GaN thickness.« less

Catalytic activity of enzymes immobilized on AlGaN /GaN solution gate field-effect transistors

NASA Astrophysics Data System (ADS)

Baur, B.; Howgate, J.; von Ribbeck, H.-G.; Gawlina, Y.; Bandalo, V.; Steinhoff, G.; Stutzmann, M.; Eickhoff, M.

2006-10-01

Enzyme-modified field-effect transistors (EnFETs) were prepared by immobilization of penicillinase on AlGaN /GaN solution gate field-effect transistors. The influence of the immobilization process on enzyme functionality was analyzed by comparing covalent immobilization and physisorption. Covalent immobilization by Schiff base formation on GaN surfaces modified with an aminopropyltriethoxysilane monolayer exhibits high reproducibility with respect to the enzyme/substrate affinity. Reductive amination of the Schiff base bonds to secondary amines significantly increases the stability of the enzyme layer. Electronic characterization of the EnFET response to penicillin G indicates that covalent immobilization leads to the formation of an enzyme (sub)monolayer.

Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions

NASA Astrophysics Data System (ADS)

Pandit, Bhishma; Seo, Tae Hoon; Ryu, Beo Deul; Cho, Jaehee

2016-06-01

The current transport mechanism of graphene formed on AlxGa1-xN/GaN heterostructures with various Al mole fractions (x = 0.15, 0.20, 0.30, and 0.40) is investigated. The current-voltage measurement from graphene to AlGaN/GaN shows an excellent rectifying property. The extracted Schottky barrier height of the graphene/AlGaN/GaN contacts increases with the Al mole fraction in AlGaN. However, the current transport mechanism deviates from the Schottky-Mott theory owing to the deterioration of AlGaN crystal quality at high Al mole fractions confirmed by reverse leakage current measurement.

Influence of high Mg doping on the microstructural and opto-electrical properties of AlGaN alloys

NASA Astrophysics Data System (ADS)

Xu, Qingjun; Zhang, Shiying; Liu, Bin; Tao, Tao; Xie, Zili; Xiu, Xiangqian; Chen, Dunjun; Chen, Peng; Han, Ping; Zheng, Youdou; Zhang, Rong

2018-07-01

Mg-doped AlxGa1-xN (x = 0.23 and 0.35) alloys have been grown on GaN templates with high temperature AlN (HT-AlN) interlayer by metalorganic chemical vapor deposition (MOCVD). A combination of secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM) indicates the formation of more inversion domains in the high Al mole fraction Mg-doped AlGaN alloys at Mg concentration ∼1020 cm-3. For Mg-doped Al0.23Ga0.77N epilayer, the analysis of cathodoluminescence (CL) spectra supports the existence of self-compensation effects due to the presence of intrinsic defects and Mg-related centers. The energy level of Mg is estimated to be around 193 meV from the temperature dependence of the resistivity measured by Hall effect experiments. And hole concentration and mobility are measured to be 1.2 × 1018 cm-3 and 0.56 cm2/V at room temperature, respectively. The reduction of acceptor activation energy and low hole mobility are attributed to inversion domains and self-compensation. Moreover, impurity band conduction is dominant in carrier transport up to a relatively higher temperature in high Al content Mg-doped AlGaN alloys.

Growth of AlGaN alloys under excess group III conditions: Formation of vertical nanorods

NASA Astrophysics Data System (ADS)

Singha, Chirantan; Sen, Sayantani; Pramanik, Pallabi; Palit, Mainak; Das, Alakananda; Roy, Abhra Shankar; Sen, Susanta; Bhattacharyya, Anirban

2018-01-01

Droplet Epitaxy of AlGaN nanostructures was investigated in this work. Growth was carried out by Plasma Assisted Molecular Beam Epitaxy (PA-MBE) under extreme group III rich conditions, where the excess metal remained on the growth surface and formed nanoscale metallic droplets due to the interplay of surface energy, surface diffusion and desorption, all of which are strongly dependent on the relative arrival rates of gallium and aluminum and the substrate temperature. Intermittent exposure of this metallic film to active nitrogen forms various types of nanostructures, whose morphology, composition and luminescence properties were evaluated. Our results indicate that for AlN, the droplet epitaxy process forms random arrays of uniform well oriented [0 0 0 1] nanorods with a height of ∼1 μm and a diameter of 250 nm. For AlGaN grown under excess gallium, and intermittent exposure to the active plasma, structures with diameters of 200 μm to 600 μm and a height of 80 nm were observed. We report the spontaneous formation of lateral concentric heterostructures under these conditions. A single photoluminescence (PL) peak was observed at about 260 nm with a room temperature to 4 K intensity ratio of ∼25%.

Direct observation of trapped charges under field-plate in p-GaN gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation

NASA Astrophysics Data System (ADS)

Katsuno, Takashi; Manaka, Takaaki; Soejima, Narumasa; Iwamoto, Mitsumasa

2017-02-01

Trapped charges underneath the field-plate (FP) in a p-gallium nitride (GaN) gate AlGaN/ GaN high electron mobility transistor device were visualized by using electric field-induced optical second-harmonic generation imaging. Second-harmonic (SH) signals in the off-state of the device with FP indicated that the electric field decreased at the p-GaN gate edge and concentrated at the FP edge. Nevertheless, SH signals originating from trapped charges were slightly observed at the p-GaN gate edge and were not observed at the FP edge in the on-state. Compared with the device without FP, reduction of trapped charges at the p-GaN gate edge of the device with FP is attributed to attenuation of the electric field with the aid of the FP. Negligible trapped charges at the FP edge is owing to lower trap density of the SiO2/AlGaN interface at the FP edge compared with that of the SiO2/p-GaN sidewall interface at the p-GaN gate edge and attenuated electric field by the thickness of the SiO2 passivation layer on the AlGaN surface.

Advanced in-situ control for III-nitride RF power device epitaxy

NASA Astrophysics Data System (ADS)

Brunner, F.; Zettler, J.-T.; Weyers, M.

2018-04-01

In this contribution, the latest improvements regarding wafer temperature measurement on 4H-SiC substrates and, based on this, of film thickness and composition control of GaN and AlGaN layers in power electronic device structures are presented. Simultaneous pyrometry at different wavelengths (950 nm and 405 nm) reveal the advantages and limits of the different temperature measurement approaches. Near-UV pyrometry gives a very stable wafer temperature signal without oscillations during GaN growth since the semi-insulating 4H-SiC substrate material becomes opaque at temperatures above 550 °C at the wavelength of 405 nm. A flat wafer temperature profile across the 100 mm substrate diameter is demonstrated despite a convex wafer shape at AlGaN growth conditions. Based on the precise assignment of wafer temperature during MOVPE we were able to improve the accuracy of the high-temperature n-k database for the materials involved. Consequently, the measurement accuracy of all film thicknesses grown under fixed temperature conditions improved. Comparison of in situ and ex situ determined layer thicknessess indicate an unintended etching of the topmost layer during cool-down. The details and limitations of real-time composition analysis for lower Al-content AlGaN barrier layers during transistor device epitaxy are shown.

Effects of structural modification on reliability of nanoscale nitride HEMTs

NASA Astrophysics Data System (ADS)

Gaddipati, Vamsi Mohan

AlGaN based nanoscale high-electron-mobility transistors (HEMTs) are the next generation of transistor technology that features the unique combination of higher power, wider bandwidth, low noise, higher efficiency, and temperature/radiation hardness than conventional AlGaAs and Si based technologies. However, as evidenced by recent stress tests, reliability of these devices (characterized by a gradual decrease in the output current/power leading to failure of the device in just tens of hours of operation) remains a major concern. Although, in these tests, physical damages were clearly visible in the device, the root cause and nature of these damages have not yet been fully assessed experimentally. Therefore, a comprehensive theoretical study of the physical mechanisms responsible for degradation of AlGaN HEMTs is essential before these devices are deployed in targeted applications. The main objective of the proposed research is to computationally investigate how degradation of state-of-the-art nanoscale AlGaN HEMTs is governed by an intricate and dynamical coupling of thermo-electromechanical processes at different length (atoms-to-transistor) and time (femtosecondto- hours) scales while operating in high voltage, large mechanical, and high temperature/radiation stresses. This work centers around a novel hypotheses as follows: High voltage applied to AlGaN HEMT causes excessive internal heat dissipation, which triggers gate metal diffusion into the semiconducting barrier layer and structural modifications (defect ii formation) leading to diminished polarization induced charge density and output current. Since the dynamical system to be studied is complex, chaotic (where the evolution rule is guided by atomicity of the underlying material), and involve coupled physical processes, an in-house multiscale simulator (QuADS 3-D) has been employed and augmented, where material parameters are obtained atomistically using firstprinciples, structural relaxation and defect formations will be modeled by integrating molecular dynamics, and the influence of atomistic processes on charge and phonon transport and current degradation will be simulated using a coupled drift-diffusionthermodynamic framework.

Interface and photoluminescence characteristics of graphene-(GaN/InGaN){sub n} multiple quantum wells hybrid structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Liancheng, E-mail: wanglc@semi.ac.cn, E-mail: lzq@semi.ac.cn, E-mail: zh.zhang@hebut.edu.cn; Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083; Mind Star

The effects of graphene on the optical properties of active system, e.g., the InGaN/GaN multiple quantum wells, are thoroughly investigated and clarified. Here, we have investigated the mechanisms accounting for the photoluminescence reduction for the graphene covered GaN/InGaN multiple quantum wells hybrid structure. Compared to the bare multiple quantum wells, the photoluminescence intensity of graphene covered multiple quantum wells showed a 39% decrease after excluding the graphene absorption losses. The responsible mechanisms have been identified with the following factors: (1) the graphene two dimensional hole gas intensifies the polarization field in multiple quantum wells, thus steepening the quantum well bandmore » profile and causing hole-electron pairs to further separate; (2) a lower affinity of graphene compared to air leading to a weaker capability to confine the excited hot electrons in multiple quantum wells; and (3) exciton transfer through non-radiative energy transfer process. These factors are theoretically analysed based on advanced physical models of semiconductor devices calculations and experimentally verified by varying structural parameters, such as the indium fraction in multiple quantum wells and the thickness of the last GaN quantum barrier spacer layer.« less

Perfect quantum multiple-unicast network coding protocol

NASA Astrophysics Data System (ADS)

Li, Dan-Dan; Gao, Fei; Qin, Su-Juan; Wen, Qiao-Yan

2018-01-01

In order to realize long-distance and large-scale quantum communication, it is natural to utilize quantum repeater. For a general quantum multiple-unicast network, it is still puzzling how to complete communication tasks perfectly with less resources such as registers. In this paper, we solve this problem. By applying quantum repeaters to multiple-unicast communication problem, we give encoding-decoding schemes for source nodes, internal ones and target ones, respectively. Source-target nodes share EPR pairs by using our encoding-decoding schemes over quantum multiple-unicast network. Furthermore, quantum communication can be accomplished perfectly via teleportation. Compared with existed schemes, our schemes can reduce resource consumption and realize long-distance transmission of quantum information.

Dominant transverse-electric polarized emission from 298 nm MBE-grown AlN-delta-GaN quantum well ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Liu, Cheng; Ooi, Yu Kee; Islam, S. M.; Xing, Huili Grace; Jena, Debdeep; Zhang, Jing

2017-02-01

III-nitride based ultraviolet (UV) light emitting diodes (LEDs) are of considerable interest in replacing gas lasers and mercury lamps for numerous applications. Specifically, AlGaN quantum well (QW) based LEDs have been developed extensively but the external quantum efficiencies of which remain less than 10% for wavelengths <300 nm due to high dislocation density, difficult p-type doping and most importantly, the physics and band structure from the three degeneration valence subbands. One solution to address this issue at deep UV wavelengths is by the use of the AlGaN-delta-GaN QW where the insertion of the delta-GaN layer can ensure the dominant conduction band (C) - heavyhole (HH) transition, leading to large transverse-electric (TE) optical output. Here, we proposed and investigated the physics and polarization-dependent optical characterizations of AlN-delta- GaN QW UV LED at 300 nm. The LED structure is grown by Molecular Beam Epitaxy (MBE) where the delta-GaN layer is 3-4 monolayer (QW-like) sandwiched by 2.5-nm AlN sub-QW layers. The physics analysis shows that the use of AlN-delta-GaN QW ensures a larger separation between the top HH subband and lower-energy bands, and strongly localizes the electron and HH wave functions toward the QW center and hence resulting in 30-time enhancement in TEpolarized spontaneous emission rate, compared to that of a conventional Al0.35Ga0.65N QW. The polarization-dependent electroluminescence measurements confirm our theoretical analysis; a dominant TE-polarized emission was obtained at 298 nm with a minimum transverse-magnetic (TM) polarized emission, indicating the feasibility of high-efficiency TEpolarized UV emitters based on our proposed QW structure.

Gallium nitride-based micro-opto-electro-mechanical systems

NASA Astrophysics Data System (ADS)

Stonas, Andreas Robert

Gallium Nitride and its associated alloys InGaN and AlGaN have many material properties that are highly desirable for micro-electro-mechanical systems (MEMS), and more specifically micro-opto-electro-mechanical systems (MOEMS). The group III-nitrides are tough, stiff, optically transparent, direct bandgap, chemically inert, highly piezoelectric, and capable of functioning at high temperatures. There is currently no other semiconductor system that possesses all of these properties. Taken together, these attributes make the nitrides prime candidates not only for creating new versions of existing device structures, but also for creating entirely unique devices which combine these properties in novel ways. Unfortunately, their chemical resiliency also makes the group III-nitrides extraordinarily difficult to shape into devices. In particular, until this research, no undercut etch technology existed that could controllably separate a selected part of a MEMS device from its sapphire or silicon carbide substrate. This has effectively prevented GaN-based MEMS from being developed. This dissertation describes how this fabrication obstacle was overcome by a novel etching geometry (bandgap-selective backside-illuminated photoelectochemical (BS-BIPEC) etching) and its resulting morphologies. Several gallium-nitride based MEMS devices were created, actuated, and modelled, including cantilevers and membranes. We describe in particular our pursuit of one of the many novel device elements that is possible only in this material system: a transducer that uses an externally applied strain to dynamically change the optical transition energy of a quantum well. While the device objective of a dynamically tunable quantum well was not achieved, we have demonstrated sufficient progress to believe that such a device will be possible soon. We have observed a shift (5.5meV) of quantum well transition energies in released structures, and we have created structures that can apply large biaxial stresses, which are required to produce significantly larger tuning (up to several hundred meV) in quantum well-based devices.

Role of low-temperature AlGaN interlayers in thick GaN on silicon by metalorganic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Fritze, S.; Drechsel, P.; Stauss, P.; Rode, P.; Markurt, T.; Schulz, T.; Albrecht, M.; Bläsing, J.; Dadgar, A.; Krost, A.

2012-06-01

Thin AlGaN interlayers have been grown into a thick GaN stack on Si substrates to compensate tensile thermal stress and significantly improve the structural perfection of the GaN. In particular, thicker interlayers reduce the density in a-type dislocations as concluded from x-ray diffraction (XRD) measurements. Beyond an interlayer thickness of 28 nm plastic substrate deformation occurs. For a thick GaN stack, the first two interlayers serve as strain engineering layers to obtain a crack-free GaN structure, while a third strongly reduces the XRD ω-(0002)-FWHM. The vertical strain and quality profile determined by several XRD methods demonstrates the individual impact of each interlayer.

Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer.

PubMed

Lin, Bing-Chen; Chen, Kuo-Ju; Wang, Chao-Hsun; Chiu, Ching-Hsueh; Lan, Yu-Pin; Lin, Chien-Chung; Lee, Po-Tsung; Shih, Min-Hsiung; Kuo, Yen-Kuang; Kuo, Hao-Chung

2014-01-13

A tapered AlGaN electron blocking layer with step-graded aluminum composition is analyzed in nitride-based blue light-emitting diode (LED) numerically and experimentally. The energy band diagrams, electrostatic fields, carrier concentration, electron current density profiles, and hole transmitting probability are investigated. The simulation results demonstrated that such tapered structure can effectively enhance the hole injection efficiency as well as the electron confinement. Consequently, the LED with a tapered EBL grown by metal-organic chemical vapor deposition exhibits reduced efficiency droop behavior of 29% as compared with 44% for original LED, which reflects the improvement in hole injection and electron overflow in our design.

Mg-hydrogen interaction in AlGaN alloys

NASA Astrophysics Data System (ADS)

Zvanut, M. E.; Sunay, Ustun R.; Dashdorj, J.; Willoughby, W. R.; Allerman, A. A.

2012-03-01

It is well known that hydrogen passivation of Mg in Mg-doped GaN reduces free hole concentrations. While there are numerous studies of passivation of Mg in GaN, little work has been reported concerning passivation rates in AlGaN alloys. We investigated the hydrogen interaction with Mg in nitrides by measuring the intensity of the electron paramagnetic resonance (EPR) signal associated with the acceptor. The samples were isothermally annealed in sequential steps ranging from 5 min - 6.6 h between 300 and 700 oC in H2:N2 (7%: 92%) or pure N2. The signal intensity decreased during the H2N2 anneal and was revived by the N2 anneal as expected; however, the rate at which the intensity changed was shown to depend on Al concentration. In addition, while all signals were quenched at 700 oC in H2:N2, a 750 oC N2 anneal reactivated only about 30% of the Mg in the alloys and 80% of the intensity in the GaN film. These data suggest that the rate of passivation and activation of Mg by hydrogen is dependent on the concentration of Al in the AlxGa-1xN layer. The EPR annealing data could prove to be beneficial in improving p-type optimization in AlGaN alloys.

Recent advances in the science and technology for solid state lighting

NASA Astrophysics Data System (ADS)

Munkholm, Anneli

2003-03-01

Recent development of high power light emitting diodes (LEDs) has enabled fabrication of solid state devices with efficiencies that surpass that of incandescent light, as well as providing a total light output significantly exceeding that of conventional indicator LEDs. This breakthrough in high flux is opening up new applications for use of high power LEDs, such as liquid crystal display backlighting and automotive headlights. Some of the key elements to this technological breakthrough are the flip-chip device design, power packaging and phosphor coating technology, which will be discussed. In addition to device design improvements, our fundamental knowledge of the III-nitride material system is improving and has resulted in higher internal quantum efficiencies. Strain plays a significant role in complex AlInGaN heterostructures used in current devices. Using a multi-beam optical strain sensor (MOSS) system to measure the wafer curvature in situ, we have characterized the strain during metal-organic chemical vapor deposition of III-nitrides. Strain measurements of InGaN, AlGaN and Si-doped GaN films on GaN will be presented.

Intersubband absorption in GaN nanowire heterostructures at mid-infrared wavelengths.

PubMed

Ajay, Akhil; Blasco, Rodrigo; Polaczynski, Jakub; Spies, Maria; den Hertog, Martien; Monroy, Eva

2018-06-27

In this paper, we study intersubband characteristics of GaN/AlN and GaN/Al0.4Ga0.6N heterostructures in GaN nanowires structurally designed to absorb in the mid-infrared wavelength region. Increasing the GaN well width from 1.5 to 5.7 nm leads to a red shift of the intersubband absorption from 1.4 to 3.4 µm. The red shift in larger quantum wells is amplified by the fact that one of the GaN/AlN heterointerfaces (corresponding to the growth of GaN on AlN) is not sharp but rather a graded alloy extending around 1.5-2 nm. Using AlGaN instead of AlN for the same barrier dimensions, we observe the effects of reduced polarization, which blue shifts the band-to-band transitions and red shifts the intersubband transitions. In heavily doped GaN/AlGaN nanowires, a broad absorption band is observed in the 4.5-6.4 µm spectral region. © 2018 IOP Publishing Ltd.

Enhancing the light-extraction efficiency of AlGaN deep-ultraviolet light-emitting diodes using highly reflective Ni/Mg and Rh as p-type electrodes

NASA Astrophysics Data System (ADS)

Maeda, Noritoshi; Yun, Joosun; Jo, Masafumi; Hirayama, Hideki

2018-04-01

Improving the light-extraction efficiency (LEE) is a major issue for the development of deep-ultraviolet (DUV) light-emitting diodes (LEDs). For this improvement, we introduced a transparent p-AlGaN contact layer and a reflective p-type electrode. In this work, we investigated the improvements obtained by replacing conventional Ni/Au p-type electrodes with highly reflective Ni/Mg and Rh electrodes. The external quantum efficiencies (EQEs) of 279 nm DUV LEDs were increased from 4.2 to 6.6% and from 3.4 to 4.5% by introducing Ni/Mg and Rh p-type electrodes, respectively. The LEE enhancement factors for the Ni/Mg and Rh electrodes were 1.6 and 1.4, respectively. These results are explained by the fact that the measured reflectances of the Ni/Mg and Rh electrodes were approximately 80 and 55%, respectively. Moreover, it was concluded that a passivation layer is required for Ni/Mg electrodes to prevent the degradation of the LED properties by the oxidation of Mg.

GaN Schottky diodes with single-crystal aluminum barriers grown by plasma-assisted molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tseng, H. Y.; Yang, W. C.; Lee, P. Y.

2016-08-22

GaN-based Schottky barrier diodes (SBDs) with single-crystal Al barriers grown by plasma-assisted molecular beam epitaxy are fabricated. Examined using in-situ reflection high-energy electron diffractions, ex-situ high-resolution x-ray diffractions, and high-resolution transmission electron microscopy, it is determined that epitaxial Al grows with its [111] axis coincident with the [0001] axis of the GaN substrate without rotation. In fabricated SBDs, a 0.2 V barrier height enhancement and 2 orders of magnitude reduction in leakage current are observed in single crystal Al/GaN SBDs compared to conventional thermal deposited Al/GaN SBDs. The strain induced piezoelectric field is determined to be the major source of themore » observed device performance enhancements.« less

CO2 detection using polyethylenimine/starch functionalized AlGaN /GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Chang, C. Y.; Kang, B. S.; Wang, H. T.; Ren, F.; Wang, Y. L.; Pearton, S. J.; Dennis, D. M.; Johnson, J. W.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.

2008-06-01

AlGaN /GaN high electron mobility transistors (HEMTs) functionalized with polyethylenimine/starch were used for detecting CO2 with a wide dynamic range of 0.9%-50% balanced with nitrogen at temperatures from 46to220°C. Higher detection sensitivity to CO2 gas was achieved at higher testing temperatures. At a fixed source-drain bias voltage of 0.5V, drain-source current of the functionalized HEMTs showed a sublinear correlation upon exposure to different CO2 concentrations at low temperature. The superlinear relationship was at high temperature. The sensor exhibited a reversible behavior and a repeatable current change of 32 and 47μA with the introduction of 28.57% and 37.5% CO2 at 108°C, respectively.

Quantum internet using code division multiple access

PubMed Central

Zhang, Jing; Liu, Yu-xi; Özdemir, Şahin Kaya; Wu, Re-Bing; Gao, Feifei; Wang, Xiang-Bin; Yang, Lan; Nori, Franco

2013-01-01

A crucial open problem inS large-scale quantum networks is how to efficiently transmit quantum data among many pairs of users via a common data-transmission medium. We propose a solution by developing a quantum code division multiple access (q-CDMA) approach in which quantum information is chaotically encoded to spread its spectral content, and then decoded via chaos synchronization to separate different sender-receiver pairs. In comparison to other existing approaches, such as frequency division multiple access (FDMA), the proposed q-CDMA can greatly increase the information rates per channel used, especially for very noisy quantum channels. PMID:23860488

Thermal etching rate of GaN during MOCVD growth interruption in hydrogen and ammonia ambient determined by AlGaN/GaN superlattice structures

NASA Astrophysics Data System (ADS)

Zhang, Feng; Ikeda, Masao; Zhang, Shuming; Liu, Jianping; Tian, Aiqin; Wen, Pengyan; Cheng, Yang; Yang, Hui

2017-10-01

Thermal etching effect of GaN during growth interruption in the metalorganic chemical vapor deposition reactor was investigated in this paper. The thermal etching rate was determined by growing a series of AlGaN/GaN superlattice structures with fixed GaN growth temperature at 735 °C and various AlGaN growth temperature changing from 900 °C to 1007 °C. It was observed that the GaN layer was etched off during the growth interruption when the growth temperature ramped up to AlGaN growth temperature. The etching thickness was determined by high resolution X-ray diffractometer and the etching rate was deduced accordingly. An activation energy of 2.53 eV was obtained for the thermal etching process.

Traps in AlGaN /GaN/SiC heterostructures studied by deep level transient spectroscopy

NASA Astrophysics Data System (ADS)

Fang, Z.-Q.; Look, D. C.; Kim, D. H.; Adesida, I.

2005-10-01

AlGaN /GaN/SiC Schottky barrier diodes (SBDs), with and without Si3N4 passivation, have been characterized by temperature-dependent current-voltage and capacitance-voltage measurements, and deep level transient spectroscopy (DLTS). A dominant trap A1, with activation energy of 1.0 eV and apparent capture cross section of 2×10-12cm2, has been observed in both unpassivated and passivated SBDs. Based on the well-known logarithmic dependence of DLTS peak height with filling pulse width for a line-defect related trap, A1, which is commonly observed in thin GaN layers grown by various techniques, is believed to be associated with threading dislocations. At high temperatures, the DLTS signal sometimes becomes negative, likely due to an artificial surface-state effect.

Effects of two-step Mg doping in p-GaN on efficiency characteristics of InGaN blue light-emitting diodes without AlGaN electron-blocking layers

NASA Astrophysics Data System (ADS)

Ryu, Han-Youl; Lee, Jong-Moo

2013-05-01

A light-emitting diode (LED) structure containing p-type GaN layers with two-step Mg doping profiles is proposed to achieve high-efficiency performance in InGaN-based blue LEDs without any AlGaN electron-blocking-layer structures. Photoluminescence and electroluminescence (EL) measurement results show that, as the hole concentration in the p-GaN interlayer between active region and the p-GaN layer increases, defect-related nonradiative recombination increases, while the electron current leakage decreases. Under a certain hole-concentration condition in the p-GaN interlayer, the electron leakage and active region degradation are optimized so that high EL efficiency can be achieved. The measured efficiency characteristics are analyzed and interpreted using numerical simulations.

The role of AlGaN buffers and channel thickness in the electronic transport properties of Al{sub x}In{sub 1–x}N/AlN/GaN heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amirabbasi, M., E-mail: mo.amirabbasi@gmail.com

We try to theoretically analyze the reported experimental data of the Al{sub x}In{sub 1–x}N/AlN/GaN heterostructures grown by MOCVD and quantitatively investigate the effects of AlGaN buffers and the GaNchannel thickness on the electrical transport properties of these systems. Also, we obtain the most important effective parameters of the temperature-dependent mobility in the range 35–300 K. Our results show that inserting a 1.1 μm thick Al{sub 0.04}Ga{sub 0.96}N buffer enhances electron mobility by decreasing the effect of phonons, the interface roughness, and dislocation and crystal defect scattering mechanisms. Also, as the channel thickness increases from 20 nm to 40 nm, themore » electron mobility increases from 2200 to 2540 cm{sup 2}/(V s) and from 870 to 1000 cm{sup 2}/(V s) at 35 and 300 K respectively, which is attributed to the reduction in the dislocation density and the strain-induced field. Finally, the reported experimental data show that inserting a 450 nm graded AlGaN layer before an Al{sub 0.04}Ga{sub 0.96}N buffer causes a decrease in the electron mobility, which is attributed to the enhancement of the lateral size of roughness, the dislocation density, and the strain-induced field in this sample.« less

Efficient III-Nitride MIS-HEMT devices with high-κ gate dielectric for high-power switching boost converter circuits

NASA Astrophysics Data System (ADS)

Mohanbabu, A.; Mohankumar, N.; Godwin Raj, D.; Sarkar, Partha; Saha, Samar K.

2017-03-01

The paper reports the results of a systematic theoretical study on efficient recessed-gate, double-heterostructure, and normally-OFF metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs), HfAlOx/AlGaN on Al2O3 substrate. In device architecture, a thin AlGaN layer is used in the AlGaN graded barrier MIS-HEMTs that offers an excellent enhancement-mode device operation with threshold voltage higher than 5.3 V and drain current above 0.64 A/mm along with high on-current/off-current ratio over 107 and subthreshold slope less than 73 mV/dec. In addition, a high OFF-state breakdown voltage of 1200 V is achieved for a device with a gate-to-drain distance and field-plate length of 15 μm and 5.3 μm, respectively at a drain current of 1 mA/mm with a zero gate bias, and the substrate grounded. The numerical device simulation results show that in comparison to a conventional AlGaN/GaN MIS-HEMT of similar design, a graded barrier MIS-HEMT device exhibits a better interface property, remarkable suppression of leakage current, and a significant improvement of breakdown voltage for HfAlOx gate dielectric. Finally, the benefit of HfAlOx graded-barrier AlGaN MIS-HEMTs based switching devices is evaluated on an ultra-low-loss converter circuit.

Secure Multiparty Quantum Computation for Summation and Multiplication.

PubMed

Shi, Run-hua; Mu, Yi; Zhong, Hong; Cui, Jie; Zhang, Shun

2016-01-21

As a fundamental primitive, Secure Multiparty Summation and Multiplication can be used to build complex secure protocols for other multiparty computations, specially, numerical computations. However, there is still lack of systematical and efficient quantum methods to compute Secure Multiparty Summation and Multiplication. In this paper, we present a novel and efficient quantum approach to securely compute the summation and multiplication of multiparty private inputs, respectively. Compared to classical solutions, our proposed approach can ensure the unconditional security and the perfect privacy protection based on the physical principle of quantum mechanics.

Secure Multiparty Quantum Computation for Summation and Multiplication

PubMed Central

Shi, Run-hua; Mu, Yi; Zhong, Hong; Cui, Jie; Zhang, Shun

2016-01-01

As a fundamental primitive, Secure Multiparty Summation and Multiplication can be used to build complex secure protocols for other multiparty computations, specially, numerical computations. However, there is still lack of systematical and efficient quantum methods to compute Secure Multiparty Summation and Multiplication. In this paper, we present a novel and efficient quantum approach to securely compute the summation and multiplication of multiparty private inputs, respectively. Compared to classical solutions, our proposed approach can ensure the unconditional security and the perfect privacy protection based on the physical principle of quantum mechanics. PMID:26792197

Experimental realization of entanglement in multiple degrees of freedom between two quantum memories.

PubMed

Zhang, Wei; Ding, Dong-Sheng; Dong, Ming-Xin; Shi, Shuai; Wang, Kai; Liu, Shi-Long; Li, Yan; Zhou, Zhi-Yuan; Shi, Bao-Sen; Guo, Guang-Can

2016-11-14

Entanglement in multiple degrees of freedom has many benefits over entanglement in a single one. The former enables quantum communication with higher channel capacity and more efficient quantum information processing and is compatible with diverse quantum networks. Establishing multi-degree-of-freedom entangled memories is not only vital for high-capacity quantum communication and computing, but also promising for enhanced violations of nonlocality in quantum systems. However, there have been yet no reports of the experimental realization of multi-degree-of-freedom entangled memories. Here we experimentally established hyper- and hybrid entanglement in multiple degrees of freedom, including path (K-vector) and orbital angular momentum, between two separated atomic ensembles by using quantum storage. The results are promising for achieving quantum communication and computing with many degrees of freedom.

Superlattice photoelectrodes for photoelectrochemical cells

DOEpatents

Nozik, Arthur J.

1987-01-01

A superlattice or multiple-quantum-well semiconductor is used as a photoelectrode in a photoelectrochemical process for converting solar energy into useful fuels or chemicals. The quantum minibands of the superlattice or multiple-quantum-well semiconductor effectively capture hot-charge carriers at or near their discrete quantum energies and deliver them to drive a chemical reaction in an electrolyte. The hot-charge carries can be injected into the electrolyte at or near the various discrete multiple energy levels quantum minibands, or they can be equilibrated among themselves to a hot-carrier pool and then injected into the electrolyte at one average energy that is higher than the lowest quantum band gap in the semiconductor.

High charge-carrier mobility enables exploitation of carrier multiplication in quantum-dot films

PubMed Central

Sandeep, C. S. Suchand; Cate, Sybren ten; Schins, Juleon M.; Savenije, Tom J.; Liu, Yao; Law, Matt; Kinge, Sachin; Houtepen, Arjan J.; Siebbeles, Laurens D. A.

2013-01-01

Carrier multiplication, the generation of multiple electron–hole pairs by a single photon, is of great interest for solar cells as it may enhance their photocurrent. This process has been shown to occur efficiently in colloidal quantum dots, however, harvesting of the generated multiple charges has proved difficult. Here we show that by tuning the charge-carrier mobility in quantum-dot films, carrier multiplication can be optimized and may show an efficiency as high as in colloidal dispersion. Our results are explained quantitatively by the competition between dissociation of multiple electron–hole pairs and Auger recombination. Above a mobility of ~1 cm2 V−1 s−1, all charges escape Auger recombination and are quantitatively converted to free charges, offering the prospect of cheap quantum-dot solar cells with efficiencies in excess of the Shockley–Queisser limit. In addition, we show that the threshold energy for carrier multiplication is reduced to twice the band gap of the quantum dots. PMID:23974282

Phosphor-Free Apple-White LEDs with Embedded Indium-Rich Nanostructures Grown on Strain Relaxed Nano-epitaxy GaN.

PubMed

Soh, C B; Liu, W; Yong, A M; Chua, S J; Chow, S Y; Tripathy, S; Tan, R J N

2010-08-01

Phosphor-free apple-white light emitting diodes have been fabricated using a dual stacked InGaN/GaN multiple quantum wells comprising of a lower set of long wavelength emitting indium-rich nanostructures incorporated in multiple quantum wells with an upper set of cyan-green emitting multiple quantum wells. The light-emitting diodes were grown on nano-epitaxially lateral overgrown GaN template formed by regrowth of GaN over SiO(2) film patterned with an anodic aluminum oxide mask with holes of 125 nm diameter and a period of 250 nm. The growth of InGaN/GaN multiple quantum wells on these stress relaxed low defect density templates improves the internal quantum efficiency by 15% for the cyan-green multiple quantum wells. Higher emission intensity with redshift in the PL peak emission wavelength is obtained for the indium-rich nanostructures incorporated in multiple quantum wells. The quantum wells grown on the nano-epitaxially lateral overgrown GaN has a weaker piezoelectric field and hence shows a minimal peak shift with application of higher injection current. An enhancement of external quantum efficiency is achieved for the apple-white light emitting diodes grown on the nano-epitaxially lateral overgrown GaN template based on the light -output power measurement. The improvement in light extraction efficiency, η(extraction,) was found to be 34% for the cyan-green emission peak and 15% from the broad long wavelength emission with optimized lattice period.

Phosphor-Free Apple-White LEDs with Embedded Indium-Rich Nanostructures Grown on Strain Relaxed Nano-epitaxy GaN

NASA Astrophysics Data System (ADS)

Soh, C. B.; Liu, W.; Yong, A. M.; Chua, S. J.; Chow, S. Y.; Tripathy, S.; Tan, R. J. N.

2010-11-01

Phosphor-free apple-white light emitting diodes have been fabricated using a dual stacked InGaN/GaN multiple quantum wells comprising of a lower set of long wavelength emitting indium-rich nanostructures incorporated in multiple quantum wells with an upper set of cyan-green emitting multiple quantum wells. The light-emitting diodes were grown on nano-epitaxially lateral overgrown GaN template formed by regrowth of GaN over SiO2 film patterned with an anodic aluminum oxide mask with holes of 125 nm diameter and a period of 250 nm. The growth of InGaN/GaN multiple quantum wells on these stress relaxed low defect density templates improves the internal quantum efficiency by 15% for the cyan-green multiple quantum wells. Higher emission intensity with redshift in the PL peak emission wavelength is obtained for the indium-rich nanostructures incorporated in multiple quantum wells. The quantum wells grown on the nano-epitaxially lateral overgrown GaN has a weaker piezoelectric field and hence shows a minimal peak shift with application of higher injection current. An enhancement of external quantum efficiency is achieved for the apple-white light emitting diodes grown on the nano-epitaxially lateral overgrown GaN template based on the light -output power measurement. The improvement in light extraction efficiency, ηextraction, was found to be 34% for the cyan-green emission peak and 15% from the broad long wavelength emission with optimized lattice period.

Efficient quantum transmission in multiple-source networks.

PubMed

Luo, Ming-Xing; Xu, Gang; Chen, Xiu-Bo; Yang, Yi-Xian; Wang, Xiaojun

2014-04-02

A difficult problem in quantum network communications is how to efficiently transmit quantum information over large-scale networks with common channels. We propose a solution by developing a quantum encoding approach. Different quantum states are encoded into a coherent superposition state using quantum linear optics. The transmission congestion in the common channel may be avoided by transmitting the superposition state. For further decoding and continued transmission, special phase transformations are applied to incoming quantum states using phase shifters such that decoders can distinguish outgoing quantum states. These phase shifters may be precisely controlled using classical chaos synchronization via additional classical channels. Based on this design and the reduction of multiple-source network under the assumption of restricted maximum-flow, the optimal scheme is proposed for specially quantized multiple-source network. In comparison with previous schemes, our scheme can greatly increase the transmission efficiency.

Experimental realization of entanglement in multiple degrees of freedom between two quantum memories

PubMed Central

Zhang, Wei; Ding, Dong-Sheng; Dong, Ming-Xin; Shi, Shuai; Wang, Kai; Liu, Shi-Long; Li, Yan; Zhou, Zhi-Yuan; Shi, Bao-Sen; Guo, Guang-Can

2016-01-01

Entanglement in multiple degrees of freedom has many benefits over entanglement in a single one. The former enables quantum communication with higher channel capacity and more efficient quantum information processing and is compatible with diverse quantum networks. Establishing multi-degree-of-freedom entangled memories is not only vital for high-capacity quantum communication and computing, but also promising for enhanced violations of nonlocality in quantum systems. However, there have been yet no reports of the experimental realization of multi-degree-of-freedom entangled memories. Here we experimentally established hyper- and hybrid entanglement in multiple degrees of freedom, including path (K-vector) and orbital angular momentum, between two separated atomic ensembles by using quantum storage. The results are promising for achieving quantum communication and computing with many degrees of freedom. PMID:27841274

Improvements to III-nitride light-emitting diodes through characterization and material growth

NASA Astrophysics Data System (ADS)

Getty, Amorette Rose Klug

A variety of experiments were conducted to improve or aid the improvement of the efficiency of III-nitride light-emitting diodes (LEDs), which are a critical area of research for multiple applications, including high-efficiency solid state lighting. To enhance the light extraction in ultraviolet LEDs grown on SiC substrates, a distributed Bragg reflector (DBR) optimized for operation in the range from 250 to 280 nm has been developed using MBE growth techniques. The best devices had a peak reflectivity of 80% with 19.5 periods, which is acceptable for the intended application. DBR surfaces were sufficiently smooth for subsequent epitaxy of the LED device. During the course of this work, pros and cons of AlGaN growth techniques, including analog versus digital alloying, were examined. This work highlighted a need for more accurate values of the refractive index of high-Al-content AlxGa1-xNin the UV wavelength range. We present refractive index results for a wide variety of materials pertinent to the fabrication of optical III-nitride devices. Characterization was done using Variable-Angle Spectroscopic Ellipsometry. The three binary nitrides, and all three ternaries, have been characterized to a greater or lesser extent depending on material compositions available. Semi-transparent p-contact materials and other thin metals for reflecting contacts have been examined to allow optimization of deposition conditions and to allow highly accurate modeling of the behavior of light within these devices. Standard substrate materials have also been characterized for completeness and as an indicator of the accuracy of our modeling technique. We have demonstrated a new technique for estimating the internal quantum efficiency (IQE) of nitride light-emitting diodes. This method is advantageous over the standard low-temperature photoluminescence-based method of estimating IQE, as the new method is conducted under the same conditions as normal device operation. We have developed processing techniques and have characterized patternable absorbing materials which eliminate scattered light within the device, allowing an accurate simulation of the device extraction efficiency. This efficiency, with measurements of the input current and optical output power, allow a straightforward calculation of the IQE. Two sets of devices were measured, one of material grown in-house, with a rough p-GaN surface, and one of commercial LED material, with smooth interfaces and very high internal quantum efficiency.

Effects of surface passivation dielectrics on carrier transport in AlGaN/GaN heterostructure field-effect transistors

NASA Astrophysics Data System (ADS)

Oh, Sejoon; Jang, Han-Soo; Choi, Chel-Jong; Cho, Jaehee

2018-04-01

Dielectric layers prepared by different deposition methods were used for the surface passivation of AlGaN/GaN heterostructure field-effect transistors (HFETs) and the corresponding electrical characteristics were examined. Increases in the sheet charge density and the maximum drain current by approximately 45% and 28%, respectively, were observed after the deposition of a 100 nm-thick SiO2 layer by plasma-enhanced chemical vapor deposition (PECVD) on the top of the AlGaN/GaN HFETs. However, SiO2 deposited by a radio frequency (rf) sputter system had the opposite effect. As the strain applied to AlGaN was influenced by the deposition methods used for the dielectric layers, the carrier transport in the two-dimensional electron gas formed at the interface between AlGaN and GaN was affected accordingly.

AlGaN-Cladding-Free m-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers

NASA Astrophysics Data System (ADS)

Farrell, Robert M.; Haeger, Daniel A.; Hsu, Po Shan; Hardy, Matthew T.; Kelchner, Kathryn M.; Fujito, Kenji; Feezell, Daniel F.; Mishra, Umesh K.; DenBaars, Steven P.; Speck, James S.; Nakamura, Shuji

2011-09-01

We present a new method of improving the accuracy and reproducibility of dry etching processes for ridge waveguide InGaN/GaN laser diodes (LDs). A GaN:Al0.09Ga0.91N etch rate selectivity of 11:1 was demonstrated for an m-plane LD with a 40 nm p-Al0.09Ga0.91N etch stop layer (ESL) surrounded by Al-free cladding layers, establishing the effectiveness of AlGaN-based ESLs for controlling etch depth in ridge waveguide InGaN/GaN LDs. These results demonstrate the potential for integrating AlGaN ESLs into commercial device designs where accurate control of the etch depth of the ridge waveguide is necessary for stable, kink-free operation at high output powers.

Ferroelectric polarization-controlled two-dimensional electron gas in ferroelectric/AlGaN/GaN heterostructure

NASA Astrophysics Data System (ADS)

Kong, Y. C.; Xue, F. S.; Zhou, J. J.; Li, L.; Chen, C.; Li, Y. R.

2009-06-01

The control effect of the ferroelectric polarization on the two-dimensional electron gas (2DEG) in a ferroelectric/AlGaN/GaN metal-ferroelectric-semiconductor (MFS) structure is theoretically analyzed by a self-consistent approach. With incorporating the hysteresis nature of the ferroelectric into calculation, the nature of the control effect is disclosed, where the 2DEG density is depleted/restored after poling/depoling operation on the MFS structure. The orientation of the ferroelectric polarization is clarified to be parallel to that of the AlGaN barrier, which, based on an electrostatics analysis, is attributed to the pinning effect of the underlying polarization. Reducing the thickness of the AlGaN barrier from 25 nm to 20 nm leads to an improved control modulation of the 2DEG density from 36.7% to 54.1%.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Douglas, E. A.; Reza, S.; Sanchez, C.

Due to the ultra-wide bandgap of Al-rich AlGaN, up to 5.8 eV for the structures in this study, obtaining low resistance ohmic contacts is inherently difficult to achieve. A comparative study of three different fabrication schemes is presented for obtaining ohmic contacts to an Al-rich AlGaN channel. Schottky-like behavior was observed for several different planar metallization stacks (and anneal temperatures), in addition to a dry-etch recess metallization contact scheme on Al 0.85Ga 0.15N/Al 0.66Ga 0.34N. However, a dry etch recess followed by n +-GaN regrowth fabrication process is reported as a means to obtain lower contact resistivity ohmic contacts onmore » a Al 0.85Ga 0.15N/Al 0.66Ga 0.34N heterostructure. In conclusion, specific contact resistivity of 5×10 -3 Ω cm 2 was achieved after annealing Ti/Al/Ni/Au metallization.« less

Accurate calibration for the quantification of the Al content in AlGaN epitaxial layers by energy-dispersive X-ray spectroscopy in a Transmission Electron Microscope

NASA Astrophysics Data System (ADS)

Amari, H.; Lari, L.; Zhang, H. Y.; Geelhaar, L.; Chèze, C.; Kappers, M. J.; McAleese, C.; Humphreys, C. J.; Walther, T.

2011-11-01

Since the band structure of group III- nitrides presents a direct electronic transition with a band-gap energy covering the range from 3.4 eV for (GaN) to 6.2 eV (for AlN) at room temperature as well as a high thermal conductivity, aluminium gallium nitride (AlGaN) is a strong candidate for high-power and high-temperature electronic devices and short-wavelength (visible and ultraviolet) optoelectronic devices. We report here a study by energy-filtered transmission electron microscopy (EFTEM) and energy-dispersive X-ray spectroscopy (EDXS) of the micro structure and elemental distribution in different aluminium gallium nitride epitaxial layers grown by different research groups. A calibration procedure is out-lined that yields the Al content from EDXS to within ~1 at % precision.

Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN /GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Wang, Hung-Ta; Kang, B. S.; Ren, F.; Fitch, R. C.; Gillespie, J. K.; Moser, N.; Jessen, G.; Jenkins, T.; Dettmer, R.; Via, D.; Crespo, A.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.

2005-10-01

Pt-gated AlGaN /GaN high electron mobility transistors can be used as room-temperature hydrogen gas sensors at hydrogen concentrations as low as 100ppm. A comparison of the changes in drain and gate current-voltage (I-V) characteristics with the introduction of 500ppm H2 into the measurement ambient shows that monitoring the change in drain-source current provides a wider gate voltage operation range for maximum detection sensitivity and higher total current change than measuring the change in gate current. However, over a narrow gate voltage range, the relative sensitivity of detection by monitoring the gate current changes is up to an order of magnitude larger than that of drain-source current changes. In both cases, the changes are fully reversible in <2-3min at 25°C upon removal of the hydrogen from the ambient.

AlGaN channel field effect transistors with graded heterostructure ohmic contacts

NASA Astrophysics Data System (ADS)

Bajaj, Sanyam; Akyol, Fatih; Krishnamoorthy, Sriram; Zhang, Yuewei; Rajan, Siddharth

2016-09-01

We report on ultra-wide bandgap (UWBG) Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistors (MISFETs) with heterostructure engineered low-resistance ohmic contacts. The low intrinsic electron affinity of AlN (0.6 eV) leads to large Schottky barriers at the metal-AlGaN interface, resulting in highly resistive ohmic contacts. In this work, we use a reverse compositional graded n++ AlGaN contact layer to achieve upward electron affinity grading, leading to a low specific contact resistance (ρsp) of 1.9 × 10-6 Ω cm2 to n-Al0.75Ga0.25N channels (bandgap ˜5.3 eV) with non-alloyed contacts. We also demonstrate UWBG Al0.75Ga0.25N channel MISFET device operation employing the compositional graded n++ ohmic contact layer and 20 nm atomic layer deposited Al2O3 as the gate-dielectric.

Experimental characterization of quantum correlated triple beams generated by cascaded four-wave mixing processes

NASA Astrophysics Data System (ADS)

Qin, Zhongzhong; Cao, Leiming; Jing, Jietai

2015-05-01

Quantum correlations and entanglement shared among multiple modes are fundamental ingredients of most continuous-variable quantum technologies. Recently, a method used to generate multiple quantum correlated beams using cascaded four-wave mixing (FWM) processes was theoretically proposed and experimentally realized by our group [Z. Qin et al., Phys. Rev. Lett. 113, 023602 (2014)]. Our study of triple-beam quantum correlation paves the way to showing the tripartite entanglement in our system. Our system also promises to find applications in quantum information and precision measurement such as the controlled quantum communications, the generation of multiple quantum correlated images, and the realization of a multiport nonlinear interferometer. For its applications, the degree of quantum correlation is a crucial figure of merit. In this letter, we experimentally study how various parameters, such as the cell temperatures, one-photon, and two-photon detunings, influence the degree of quantum correlation between the triple beams generated from the cascaded two-FWM configuration.

Experimental characterization of quantum correlated triple beams generated by cascaded four-wave mixing processes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qin, Zhongzhong; Cao, Leiming; Jing, Jietai, E-mail: jtjing@phy.ecnu.edu.cn

2015-05-25

Quantum correlations and entanglement shared among multiple modes are fundamental ingredients of most continuous-variable quantum technologies. Recently, a method used to generate multiple quantum correlated beams using cascaded four-wave mixing (FWM) processes was theoretically proposed and experimentally realized by our group [Z. Qin et al., Phys. Rev. Lett. 113, 023602 (2014)]. Our study of triple-beam quantum correlation paves the way to showing the tripartite entanglement in our system. Our system also promises to find applications in quantum information and precision measurement such as the controlled quantum communications, the generation of multiple quantum correlated images, and the realization of a multiportmore » nonlinear interferometer. For its applications, the degree of quantum correlation is a crucial figure of merit. In this letter, we experimentally study how various parameters, such as the cell temperatures, one-photon, and two-photon detunings, influence the degree of quantum correlation between the triple beams generated from the cascaded two-FWM configuration.« less

Quantum filtering for multiple diffusive and Poissonian measurements

NASA Astrophysics Data System (ADS)

Emzir, Muhammad F.; Woolley, Matthew J.; Petersen, Ian R.

2015-09-01

We provide a rigorous derivation of a quantum filter for the case of multiple measurements being made on a quantum system. We consider a class of measurement processes which are functions of bosonic field operators, including combinations of diffusive and Poissonian processes. This covers the standard cases from quantum optics, where homodyne detection may be described as a diffusive process and photon counting may be described as a Poissonian process. We obtain a necessary and sufficient condition for any pair of such measurements taken at different output channels to satisfy a commutation relationship. Then, we derive a general, multiple-measurement quantum filter as an extension of a single-measurement quantum filter. As an application we explicitly obtain the quantum filter corresponding to homodyne detection and photon counting at the output ports of a beam splitter.

Time-domain multiple-quantum NMR

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weitekamp, Daniel P.

1982-11-01

The development of time-domain multiple-quantum nuclear magnetic resonance is reviewed through mid 1982 and some prospects for future development are indicated. Particular attention is given to the problem of obtaining resolved, interpretable, many-quantum spectra for anisotropic magnetically isolated systems of coupled spins. New results are presented on a number of topics including the optimization of multiple-quantum-line intensities, analysis of noise in two-dimensional spectroscopy, and the use of order-selective excitation for cross polarization between nuclear-spin species.

Computer studies of multiple-quantum spin dynamics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Murdoch, J.B.

The excitation and detection of multiple-quantum (MQ) transitions in Fourier transform NMR spectroscopy is an interesting problem in the quantum mechanical dynamics of spin systems as well as an important new technique for investigation of molecular structure. In particular, multiple-quantum spectroscopy can be used to simplify overly complex spectra or to separate the various interactions between a nucleus and its environment. The emphasis of this work is on computer simulation of spin-system evolution to better relate theory and experiment.

Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anand, M. J., E-mail: anand2@e.ntu.edu.sg, E-mail: eging@ntu.edu.sg; Ng, G. I., E-mail: anand2@e.ntu.edu.sg, E-mail: eging@ntu.edu.sg; Syamal, B.

2015-02-23

The influence of electric field (EF) on the dynamic ON-resistance (dyn-R{sub DS[ON]}) and threshold-voltage shift (ΔV{sub th}) of AlGaN/GaN high electron mobility transistors on Si has been investigated using pulsed current-voltage (I{sub DS}-V{sub DS}) and drain current (I{sub D}) transients. Different EF was realized with devices of different gate-drain spacing (L{sub gd}) under the same OFF-state stress. Under high-EF (L{sub gd} = 2 μm), the devices exhibited higher dyn-R{sub DS[ON]} degradation but a small ΔV{sub th} (∼120 mV). However, at low-EF (L{sub gd} = 5 μm), smaller dyn-R{sub DS[ON]} degradation but a larger ΔV{sub th} (∼380 mV) was observed. Our analysis shows that under OFF-state stress, the gatemore » electrons are injected and trapped in the AlGaN barrier by tunnelling-assisted Poole-Frenkel conduction mechanism. Under high-EF, trapping spreads towards the gate-drain access region of the AlGaN barrier causing dyn-R{sub DS[ON]} degradation, whereas under low-EF, trapping is mostly confined under the gate causing ΔV{sub th}. A trap with activation energy 0.33 eV was identified in the AlGaN barrier by I{sub D}-transient measurements. The influence of EF on trapping was also verified by Silvaco TCAD simulations.« less

Insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor devices with Al2O3 or AlTiO gate dielectrics

NASA Astrophysics Data System (ADS)

Le, Son Phuong; Nguyen, Duong Dai; Suzuki, Toshi-kazu

2018-01-01

We have investigated insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor (MIS) devices with Al2O3 or AlTiO (an alloy of Al2O3 and TiO2) gate dielectrics obtained by atomic layer deposition on AlGaN. Analyzing insulator-thickness dependences of threshold voltages for the MIS devices, we evaluated positive interface fixed charges, whose density at the AlTiO/AlGaN interface is significantly lower than that at the Al2O3/AlGaN interface. This and a higher dielectric constant of AlTiO lead to rather shallower threshold voltages for the AlTiO gate dielectric than for Al2O3. The lower interface fixed charge density also leads to the fact that the two-dimensional electron concentration is a decreasing function of the insulator thickness for AlTiO, whereas being an increasing function for Al2O3. Moreover, we discuss the relationship between the interface fixed charges and interface states. From the conductance method, it is shown that the interface state densities are very similar at the Al2O3/AlGaN and AlTiO/AlGaN interfaces. Therefore, we consider that the lower AlTiO/AlGaN interface fixed charge density is not owing to electrons trapped at deep interface states compensating the positive fixed charges and can be attributed to a lower density of oxygen-related interface donors.

Efficient Quantum Transmission in Multiple-Source Networks

PubMed Central

Luo, Ming-Xing; Xu, Gang; Chen, Xiu-Bo; Yang, Yi-Xian; Wang, Xiaojun

2014-01-01

A difficult problem in quantum network communications is how to efficiently transmit quantum information over large-scale networks with common channels. We propose a solution by developing a quantum encoding approach. Different quantum states are encoded into a coherent superposition state using quantum linear optics. The transmission congestion in the common channel may be avoided by transmitting the superposition state. For further decoding and continued transmission, special phase transformations are applied to incoming quantum states using phase shifters such that decoders can distinguish outgoing quantum states. These phase shifters may be precisely controlled using classical chaos synchronization via additional classical channels. Based on this design and the reduction of multiple-source network under the assumption of restricted maximum-flow, the optimal scheme is proposed for specially quantized multiple-source network. In comparison with previous schemes, our scheme can greatly increase the transmission efficiency. PMID:24691590

Exciton multiplication from first principles.

PubMed

Jaeger, Heather M; Hyeon-Deuk, Kim; Prezhdo, Oleg V

2013-06-18

Third-generation photovolatics require demanding cost and power conversion efficiency standards, which may be achieved through efficient exciton multiplication. Therefore, generating more than one electron-hole pair from the absorption of a single photon has vast ramifications on solar power conversion technology. Unlike their bulk counterparts, irradiated semiconductor quantum dots exhibit efficient exciton multiplication, due to confinement-enhanced Coulomb interactions and slower nonradiative losses. The exact characterization of the complicated photoexcited processes within quantum-dot photovoltaics is a work in progress. In this Account, we focus on the photophysics of nanocrystals and investigate three constituent processes of exciton multiplication, including photoexcitation, phonon-induced dephasing, and impact ionization. We quantify the role of each process in exciton multiplication through ab initio computation and analysis of many-electron wave functions. The probability of observing a multiple exciton in a photoexcited state is proportional to the magnitude of electron correlation, where correlated electrons can be simultaneously promoted across the band gap. Energies of multiple excitons are determined directly from the excited state wave functions, defining the threshold for multiple exciton generation. This threshold is strongly perturbed in the presence of surface defects, dopants, and ionization. Within a few femtoseconds following photoexcitation, the quantum state loses coherence through interactions with the vibrating atomic lattice. The phase relationship between single excitons and multiple excitons dissipates first, followed by multiple exciton fission. Single excitons are coupled to multiple excitons through Coulomb and electron-phonon interactions, and as a consequence, single excitons convert to multiple excitons and vice versa. Here, exciton multiplication depends on the initial energy and coupling magnitude and competes with electron-phonon energy relaxation. Multiple excitons are generated through impact ionization within picoseconds. The basis of exciton multiplication in quantum dots is the collective result of photoexcitation, dephasing, and nonadiabatic evolution. Each process is characterized by a distinct time-scale, and the overall multiple exciton generation dynamics is complete by about 10 ps. Without relying on semiempirical parameters, we computed quantum mechanical probabilities of multiple excitons for small model systems. Because exciton correlations and coherences are microscopic, quantum properties, results for small model systems can be extrapolated to larger, realistic quantum dots.

Nonadditivity of quantum and classical capacities for entanglement breaking multiple-access channels and the butterfly network

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grudka, Andrzej; National Quantum Information Centre of Gdansk, PL-81-824 Sopot; Horodecki, Pawel

2010-06-15

We analyze quantum network primitives which are entanglement breaking. We show superadditivity of quantum and classical capacity regions for quantum multiple-access channels and the quantum butterfly network. Since the effects are especially visible at high noise they suggest that quantum information effects may be particularly helpful in the case of the networks with occasional high noise rates. The present effects provide a qualitative borderline between superadditivities of bipartite and multipartite systems.

Engineering of electric field distribution in GaN(cap)/AlGaN/GaN heterostructures: theoretical and experimental studies

NASA Astrophysics Data System (ADS)

Gladysiewicz, M.; Janicki, L.; Misiewicz, J.; Sobanska, M.; Klosek, K.; Zytkiewicz, Z. R.; Kudrawiec, R.

2016-09-01

Polarization engineering of GaN-based heterostructures opens a way to develop advanced transistor heterostructures, although measurement of the electric field in such heterostructures is not a simple task. In this work, contactless electroreflectance (CER) spectroscopy has been applied to measure the electric field in GaN-based heterostructures. For a set of GaN(d  =  0, 5, 15, and 30 nm)/AlGaN(20 nm)/GaN(buffer) heterostructures a decrease of electric field in the GaN(cap) layer from 0.66 MV cm-1 to 0.27 MV cm-1 and an increase of the electric field in the AlGaN layer from 0.57 MV cm-1 to 0.99 MV cm-1 have been observed with the increase in the GaN(cap) thickness from 5-30 nm. For a set of GaN(20 nm)/AlGaN(d  =  10, 20, 30, and 40 nm)/GaN(buffer) heterostructures a decrease of the electric field in the AlGaN layer from 1.77 MV cm-1 to 0.64 MV cm-1 and an increase of the electric field in the GaN layer from 0.57 MV cm-1 to 0.99 MV cm-1 were observed with the increase in the AlGaN thickness from 10-40 nm. To determine the distribution of the electric field in these heterostructures the Schrödinger and Poisson equations are solved in a self-consistent manner and matched with experimental data. It is shown that the built-in electric field in the GaN(cap) and AlGaN layers obtained from measurements does not reach values of electric field resulting only from polarization effects. The measured electric fields are smaller due to a screening of polarization effects by free carriers, which are inhomogeneously distributed across the heterostructure and accumulate at interfaces. The results clearly demonstrate that CER measurements supported by theoretical calculations are able to determine the electric field distribution in GaN-based heterostructures quantitatively, which is very important for polarization engineering in this material system.

Thermo-piezo-electro-mechanical simulation of AlGaN (aluminum gallium nitride) / GaN (gallium nitride) High Electron Mobility Transistors

NASA Astrophysics Data System (ADS)

Stevens, Lorin E.

Due to the current public demand of faster, more powerful, and more reliable electronic devices, research is prolific these days in the area of high electron mobility transistor (HEMT) devices. This is because of their usefulness in RF (radio frequency) and microwave power amplifier applications including microwave vacuum tubes, cellular and personal communications services, and widespread broadband access. Although electrical transistor research has been ongoing since its inception in 1947, the transistor itself continues to evolve and improve much in part because of the many driven researchers and scientists throughout the world who are pushing the limits of what modern electronic devices can do. The purpose of the research outlined in this paper was to better understand the mechanical stresses and strains that are present in a hybrid AlGaN (Aluminum Gallium Nitride) / GaN (Gallium Nitride) HEMT, while under electrically-active conditions. One of the main issues currently being researched in these devices is their reliability, or their consistent ability to function properly, when subjected to high-power conditions. The researchers of this mechanical study have performed a static (i.e. frequency-independent) reliability analysis using powerful multiphysics computer modeling/simulation to get a better idea of what can cause failure in these devices. Because HEMT transistors are so small (micro/nano-sized), obtaining experimental measurements of stresses and strains during the active operation of these devices is extremely challenging. Physical mechanisms that cause stress/strain in these structures include thermo-structural phenomena due to mismatch in both coefficient of thermal expansion (CTE) and mechanical stiffness between different materials, as well as stress/strain caused by "piezoelectric" effects (i.e. mechanical deformation caused by an electric field, and conversely voltage induced by mechanical stress) in the AlGaN and GaN device portions (both piezoelectric materials). This piezoelectric effect can be triggered by voltage applied to the device's gate contact and the existence of an HEMT-unique "two-dimensional electron gas" (2DEG) at the GaN-AlGaN interface. COMSOL Multiphysics computer software has been utilized to create a finite element (i.e. piece-by-piece) simulation to visualize both temperature and stress/strain distributions that can occur in the device, by coupling together (i.e. solving simultaneously) the thermal, electrical, structural, and piezoelectric effects inherent in the device. The 2DEG has been modeled not with the typically-used self-consistent quantum physics analytical equations, rather as a combined localized heat source* (thermal) and surface charge density* (electrical) boundary condition. Critical values of stress/strain and their respective locations in the device have been identified. Failure locations have been estimated based on the critical values of stress and strain, and compared with reports in literature. The knowledge of the overall stress/strain distribution has assisted in determining the likely device failure mechanisms and possible mitigation approaches. The contribution and interaction of individual stress mechanisms including piezoelectric effects and thermal expansion caused by device self-heating (i.e. fast-moving electrons causing heat) have been quantified. * Values taken from results of experimental studies in literature.

Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martens, M.; Kuhn, C.; Ziffer, E.

2016-04-11

Current injection into AlGaN-based laser diode structures with high aluminum mole fractions for deep ultraviolet emission is investigated. The electrical characteristics of laser diode structures with different p-AlGaN short period superlattice (SPSL) cladding layers with various aluminum mole fractions are compared. The heterostructures contain all elements that are needed for a current-injection laser diode including cladding and waveguide layers as well as an AlGaN quantum well active region emitting near 270 nm. We found that with increasing aluminum content in the p-AlGaN cladding, the diode turn-on voltage increases, while the series resistance slightly decreases. By introducing an SPSL instead of bulkmore » layers, the operating voltage is significantly reduced. A gain guided broad area laser diode structure with transparent p-Al{sub 0.70}Ga{sub 0.30}N waveguide layers and a transparent p-cladding with an average aluminum content of 81% was designed for strong confinement of the transverse optical mode and low optical losses. Using an optimized SPSL, this diode could sustain current densities of more than 4.5 kA/cm{sup 2}.« less

On the AlxGa1-xN/AlyGa1-yN/AlxGa1-xN (x>y) p-electron blocking layer to improve the hole injection for AlGaN based deep ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Chu, Chunshuang; Tian, Kangkai; Fang, Mengqian; Zhang, Yonghui; Li, Luping; Bi, Wengang; Zhang, Zi-Hui

2018-01-01

This work proposes the [0001] oriented AlGaN-based deep ultraviolet (DUV) light-emitting diode (LED) possessing a specifically designed p-electron blocking layer (p-EBL) to achieve the high internal quantum efficiency. Both electrons and holes can be efficiently injected into the active region by adopting the Al0.60Ga0.40N/Al0.50Ga0.50N/Al0.60Ga0.40N structured p-EBL, in which a p-Al0.50Ga0.50N layer is embedded into the p-EBL. Moreover, the impact of different thicknesses for the p-Al0.50Ga0.50N insertion layer on the hole and electron injections has also been investigated. Compared with the DUV LED with the bulk p-Al0.60Ga0.40N as the EBL, the proposed LED architectures improve the light output power if the thickness of the p-Al0.50Ga0.50N insertion layer is properly designed.

Multiple-state quantum Otto engine, 1D box system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Latifah, E., E-mail: enylatifah@um.ac.id; Purwanto, A.

2014-03-24

Quantum heat engines produce work using quantum matter as their working substance. We studied adiabatic and isochoric processes and defined the general force according to quantum system. The processes and general force are used to evaluate a quantum Otto engine based on multiple-state of one dimensional box system and calculate the efficiency. As a result, the efficiency depends on the ratio of initial and final width of system under adiabatic processes.

An efficient quantum circuit analyser on qubits and qudits

NASA Astrophysics Data System (ADS)

Loke, T.; Wang, J. B.

2011-10-01

This paper presents a highly efficient decomposition scheme and its associated Mathematica notebook for the analysis of complicated quantum circuits comprised of single/multiple qubit and qudit quantum gates. In particular, this scheme reduces the evaluation of multiple unitary gate operations with many conditionals to just two matrix additions, regardless of the number of conditionals or gate dimensions. This improves significantly the capability of a quantum circuit analyser implemented in a classical computer. This is also the first efficient quantum circuit analyser to include qudit quantum logic gates.

Optical properties of a-plane (Al, Ga)N/GaN multiple quantum wells grown on strain engineered Zn1-xMgxO layers by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Xia, Y.; Brault, J.; Nemoz, M.; Teisseire, M.; Vinter, B.; Leroux, M.; Chauveau, J.-M.

2011-12-01

Nonpolar (112¯0) Al0.2Ga0.8N/GaN multiple quantum wells (MQWs) have been grown by molecular beam epitaxy on (112¯0) Zn0.74Mg0.26O templates on r-plane sapphire substrates. The quantum wells exhibit well-resolved photoluminescence peaks in the ultra-violet region, and no sign of quantum confined Stark effect is observed in the complete multiple quantum well series. The results agree well with flat band quantum well calculations. Furthermore, we show that the MQW structures are strongly polarized along the [0001] direction. The origin of the polarization is discussed in terms of the strain anisotropy dependence of the exciton optical oscillator strengths.

Critical side channel effects in random bit generation with multiple semiconductor lasers in a polarization-based quantum key distribution system.

PubMed

Ko, Heasin; Choi, Byung-Seok; Choe, Joong-Seon; Kim, Kap-Joong; Kim, Jong-Hoi; Youn, Chun Ju

2017-08-21

Most polarization-based BB84 quantum key distribution (QKD) systems utilize multiple lasers to generate one of four polarization quantum states randomly. However, random bit generation with multiple lasers can potentially open critical side channels that significantly endangers the security of QKD systems. In this paper, we show unnoticed side channels of temporal disparity and intensity fluctuation, which possibly exist in the operation of multiple semiconductor laser diodes. Experimental results show that the side channels can enormously degrade security performance of QKD systems. An important system issue for the improvement of quantum bit error rate (QBER) related with laser driving condition is further addressed with experimental results.

Quantum theory of multiple-input-multiple-output Markovian feedback with diffusive measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chia, A.; Wiseman, H. M.

2011-07-15

Feedback control engineers have been interested in multiple-input-multiple-output (MIMO) extensions of single-input-single-output (SISO) results of various kinds due to its rich mathematical structure and practical applications. An outstanding problem in quantum feedback control is the extension of the SISO theory of Markovian feedback by Wiseman and Milburn [Phys. Rev. Lett. 70, 548 (1993)] to multiple inputs and multiple outputs. Here we generalize the SISO homodyne-mediated feedback theory to allow for multiple inputs, multiple outputs, and arbitrary diffusive quantum measurements. We thus obtain a MIMO framework which resembles the SISO theory and whose additional mathematical structure is highlighted by the extensivemore » use of vector-operator algebra.« less

Multiple-exciton generation in lead selenide nanorod solar cells with external quantum efficiencies exceeding 120%

PubMed Central

Davis, Nathaniel J. L. K.; Böhm, Marcus L.; Tabachnyk, Maxim; Wisnivesky-Rocca-Rivarola, Florencia; Jellicoe, Tom C.; Ducati, Caterina; Ehrler, Bruno; Greenham, Neil C.

2015-01-01

Multiple-exciton generation—a process in which multiple charge-carrier pairs are generated from a single optical excitation—is a promising way to improve the photocurrent in photovoltaic devices and offers the potential to break the Shockley–Queisser limit. One-dimensional nanostructures, for example nanorods, have been shown spectroscopically to display increased multiple exciton generation efficiencies compared with their zero-dimensional analogues. Here we present solar cells fabricated from PbSe nanorods of three different bandgaps. All three devices showed external quantum efficiencies exceeding 100% and we report a maximum external quantum efficiency of 122% for cells consisting of the smallest bandgap nanorods. We estimate internal quantum efficiencies to exceed 150% at relatively low energies compared with other multiple exciton generation systems, and this demonstrates the potential for substantial improvements in device performance due to multiple exciton generation. PMID:26411283

Storage of multiple single-photon pulses emitted from a quantum dot in a solid-state quantum memory.

PubMed

Tang, Jian-Shun; Zhou, Zong-Quan; Wang, Yi-Tao; Li, Yu-Long; Liu, Xiao; Hua, Yi-Lin; Zou, Yang; Wang, Shuang; He, De-Yong; Chen, Geng; Sun, Yong-Nan; Yu, Ying; Li, Mi-Feng; Zha, Guo-Wei; Ni, Hai-Qiao; Niu, Zhi-Chuan; Li, Chuan-Feng; Guo, Guang-Can

2015-10-15

Quantum repeaters are critical components for distributing entanglement over long distances in presence of unavoidable optical losses during transmission. Stimulated by the Duan-Lukin-Cirac-Zoller protocol, many improved quantum repeater protocols based on quantum memories have been proposed, which commonly focus on the entanglement-distribution rate. Among these protocols, the elimination of multiple photons (or multiple photon-pairs) and the use of multimode quantum memory are demonstrated to have the ability to greatly improve the entanglement-distribution rate. Here, we demonstrate the storage of deterministic single photons emitted from a quantum dot in a polarization-maintaining solid-state quantum memory; in addition, multi-temporal-mode memory with 1, 20 and 100 narrow single-photon pulses is also demonstrated. Multi-photons are eliminated, and only one photon at most is contained in each pulse. Moreover, the solid-state properties of both sub-systems make this configuration more stable and easier to be scalable. Our work will be helpful in the construction of efficient quantum repeaters based on all-solid-state devices.

Storage of multiple single-photon pulses emitted from a quantum dot in a solid-state quantum memory

PubMed Central

Tang, Jian-Shun; Zhou, Zong-Quan; Wang, Yi-Tao; Li, Yu-Long; Liu, Xiao; Hua, Yi-Lin; Zou, Yang; Wang, Shuang; He, De-Yong; Chen, Geng; Sun, Yong-Nan; Yu, Ying; Li, Mi-Feng; Zha, Guo-Wei; Ni, Hai-Qiao; Niu, Zhi-Chuan; Li, Chuan-Feng; Guo, Guang-Can

2015-01-01

Quantum repeaters are critical components for distributing entanglement over long distances in presence of unavoidable optical losses during transmission. Stimulated by the Duan–Lukin–Cirac–Zoller protocol, many improved quantum repeater protocols based on quantum memories have been proposed, which commonly focus on the entanglement-distribution rate. Among these protocols, the elimination of multiple photons (or multiple photon-pairs) and the use of multimode quantum memory are demonstrated to have the ability to greatly improve the entanglement-distribution rate. Here, we demonstrate the storage of deterministic single photons emitted from a quantum dot in a polarization-maintaining solid-state quantum memory; in addition, multi-temporal-mode memory with 1, 20 and 100 narrow single-photon pulses is also demonstrated. Multi-photons are eliminated, and only one photon at most is contained in each pulse. Moreover, the solid-state properties of both sub-systems make this configuration more stable and easier to be scalable. Our work will be helpful in the construction of efficient quantum repeaters based on all-solid-state devices. PMID:26468996

Microscopic potential fluctuations in Si-doped AlGaN epitaxial layers with various AlN molar fractions and Si concentrations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kurai, Satoshi, E-mail: kurai@yamaguchi-u.ac.jp; Yamada, Yoichi; Miyake, Hideto

2016-01-14

Nanoscopic potential fluctuations of Si-doped AlGaN epitaxial layers with the AlN molar fraction varying from 0.42 to 0.95 and Si-doped Al{sub 0.61}Ga{sub 0.39}N epitaxial layers with Si concentrations of 3.0–37 × 10{sup 17 }cm{sup −3} were investigated by cathodoluminescence (CL) imaging combined with scanning electron microscopy. The spot CL linewidths of AlGaN epitaxial layers broadened as the AlN molar fraction was increased to 0.7, and then narrowed at higher AlN molar fractions. The experimental linewidths were compared with the theoretical prediction from the alloy broadening model. The trends displayed by our spot CL linewidths were consistent with calculated results at AlN molar fractionsmore » of less than about 0.60, but the spot CL linewidths were markedly broader than the calculated linewidths at higher AlN molar fractions. The dependence of the difference between the spot CL linewidth and calculated line broadening on AlN molar fraction was found to be similar to the dependence of reported S values, indicating that the vacancy clusters acted as the origin of additional line broadening at high AlN molar fractions. The spot CL linewidths of Al{sub 0.61}Ga{sub 0.39}N epitaxial layers with the same Al concentration and different Si concentrations were nearly constant in the entire Si concentration range tested. From the comparison of reported S values, the increase of V{sub Al} did not contribute to the linewidth broadening, unlike the case of the V{sub Al} clusters.« less

Defect reduction in Si-doped Al{sub 0.45}Ga{sub 0.55}N films by SiN{sub x} interlayer method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Yang; Chen, Shengchang; Kong, Man

2014-01-28

The dislocation density in AlGaN epitaxial layers with Al content as high as 45% grown on sapphire substrates has been effectively reduced by introducing an in-situ deposited SiN{sub x} nanomask layer in this study. By closely monitoring the evolution of numerous material properties, such as surface morphology, dislocation density, photoluminescence, strain states, and electron mobility of the Si-Al{sub 0.45}Ga{sub 0.55}N layers as the functions of SiN{sub x} interlayer growth time, the surface coverage fraction of SiN{sub x} is found to be a crucial factor determining the strain states and dislocation density. The dependence of the strain states and the dislocationmore » density on the surface coverage fraction of SiN{sub x} nanomask supports the very different growth models of Al-rich AlGaN on SiN{sub x} interlayer due to the reduced nucleation selectivity compared with the GaN counterpart. Compared with GaN, which can only nucleate at open pores of SiN{sub x} nanomask, Al-rich AlGaN can simultaneously nucleate at both open pores and SiN{sub x} covered areas. Dislocations will annihilate at the openings due to the 3D growth initiated on the opening area, while 2D growth mode is preserved on SiN{sub x} and the threading dislocations are also preserved. During the following growth process, lateral overgrowth will proceed from the Al{sub 0.45}Ga{sub 0.55}N islands on the openings towards the regions covered by SiN{sub x}, relaxing the compressive strain and bending the dislocations at the same time.« less

Plasmon-Assisted Selective and Super-Resolving Excitation of Individual Quantum Emitters on a Metal Nanowire.

PubMed

Li, Qiang; Pan, Deng; Wei, Hong; Xu, Hongxing

2018-03-14

Hybrid systems composed of multiple quantum emitters coupled with plasmonic waveguides are promising building blocks for future integrated quantum nanophotonic circuits. The techniques that can super-resolve and selectively excite contiguous quantum emitters in a diffraction-limited area are of great importance for studying the plasmon-mediated interaction between quantum emitters and manipulating the single plasmon generation and propagation in plasmonic circuits. Here we show that multiple quantum dots coupled with a silver nanowire can be controllably excited by tuning the interference field of surface plasmons on the nanowire. Because of the period of the interference pattern is much smaller than the diffraction limit, we demonstrate the selective excitation of two quantum dots separated by a distance as short as 100 nm. We also numerically demonstrate a new kind of super-resolution imaging method that combines the tunable surface plasmon interference pattern on the NW with the structured illumination microscopy technique. Our work provides a novel high-resolution optical excitation and imaging method for the coupled systems of multiple quantum emitters and plasmonic waveguides, which adds a new tool for studying and manipulating single quantum emitters and single plasmons for quantum plasmonic circuitry applications.

Homogeneous AlGaN/GaN superlattices grown on free-standing (1100) GaN substrates by plasma-assisted molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shao, Jiayi; Malis, Oana; Physics Department, Purdue University, West Lafayette, Indiana 47907

Two-dimensional and homogeneous growth of m-plane AlGaN by plasma-assisted molecular beam epitaxy has been realized on free-standing (1100) GaN substrates by implementing high metal-to-nitrogen (III/N) flux ratio. AlN island nucleation, often reported for m-plane AlGaN under nitrogen-rich growth conditions, is suppressed at high III/N flux ratio, highlighting the important role of growth kinetics for adatom incorporation. The homogeneity and microstructure of m-plane AlGaN/GaN superlattices are assessed via a combination of scanning transmission electron microscopy and high resolution transmission electron microscopy (TEM). The predominant defects identified in dark field TEM characterization are short basal plane stacking faults (SFs) bounded by eithermore » Frank-Shockley or Frank partial dislocations. In particular, the linear density of SFs is approximately 5 × 10{sup −5} cm{sup −1}, and the length of SFs is less than 15 nm.« less

Algan/Gan Hemt By Magnetron Sputtering System

NASA Astrophysics Data System (ADS)

Garcia Perez, Roman

In this thesis, the growth of the semiconductor materials AlGaN and GaN is achieved by magnetron sputtering for the fabrication of High Electron Mobility Transistors (HEMTs). The study of the deposited nitrides is conducted by spectroscopy, diffraction, and submicron scale microscope methods. The preparation of the materials is performed using different parameters in terms of power, pressure, temperature, gas, and time. Silicon (Si) and Sapphire (Al2O3) wafers are used as substrates. The chemical composition and surface topography of the samples are analyzed to calculate the materials atomic percentages and to observe the devices surface. The instruments used for the semiconductors characterization are X-ray Photoelectron Spectroscopy (XPS), X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Atomic Force Microscope (AFM). The project focused its attention on the reduction of impurities during the deposition, the controlled thicknesses of the thin-films, the atomic configuration of the alloy AlxGa1-xN, and the uniformity of the surfaces.

Development of novel technologies to enhance performance and reliability of III-Nitride avalanche photodiodes

NASA Astrophysics Data System (ADS)

Suvarna, Puneet Harischandra

Solar-blind ultraviolet avalanche photodiodes are an enabling technology for applications in the fields of astronomy, communication, missile warning systems, biological agent detection and particle physics research. Avalanche photodiodes (APDs) are capable of detecting low-intensity light with high quantum efficiency and signal-to-noise ratio without the need for external amplification. The properties of III-N materials (GaN and AlGaN) are promising for UV photodetectors that are highly efficient, radiation-hard and capable of visible-blind or solar-blind operation without the need for external filters. However, the realization of reliable and high performance III-N APDs and imaging arrays has several technological challenges. The high price and lack of availability of bulk III-N substrates necessitates the growth of III-Ns on lattice mismatched substrates leading to a high density of dislocations in the material that can cause high leakage currents, noise and premature breakdown in APDs. The etched sidewalls of III-N APDs and high electric fields at contact edges are also detrimental to APD performance and reliability. In this work, novel technologies have been developed and implemented that address the issues of performance and reliability in III-Nitride based APDs. To address the issue of extended defects in the bulk of the material, a novel pulsed MOCVD process was developed for the growth of AlGaN. This process enables growth of high crystal quality AlxGa1-xN with excellent control over composition, doping and thickness. The process has also been adapted for the growth of high quality III-N materials on silicon substrate for devices such as high electron mobility transistors (HEMTs). A novel post-growth defect isolation technique is also discussed that can isolate the impact of conductive defects from devices. A new sidewall passivation technique using atomic layer deposition (ALD) of dielectric materials was developed for III-N APDs that is effective in reducing the dark-current and trap states at sidewalls by close to an order of magnitude, leading to improved APD performance. Development and implementation of an ion implantation based contact edge termination technique for III-N APDs that helps prevent premature breakdown from the contact edge of the devices, has further lead to improved reliability. Finally novel improved III-N APD device designs are proposed using preliminary experiments and numerical simulations for future implementations.

A versatile phenomenological model for the S-shaped temperature dependence of photoluminescence energy for an accurate determination of the exciton localization energy in bulk and quantum well structures

NASA Astrophysics Data System (ADS)

Dixit, V. K.; Porwal, S.; Singh, S. D.; Sharma, T. K.; Ghosh, Sandip; Oak, S. M.

2014-02-01

Temperature dependence of the photoluminescence (PL) peak energy of bulk and quantum well (QW) structures is studied by using a new phenomenological model for including the effect of localized states. In general an anomalous S-shaped temperature dependence of the PL peak energy is observed for many materials which is usually associated with the localization of excitons in band-tail states that are formed due to potential fluctuations. Under such conditions, the conventional models of Varshni, Viña and Passler fail to replicate the S-shaped temperature dependence of the PL peak energy and provide inconsistent and unrealistic values of the fitting parameters. The proposed formalism persuasively reproduces the S-shaped temperature dependence of the PL peak energy and provides an accurate determination of the exciton localization energy in bulk and QW structures along with the appropriate values of material parameters. An example of a strained InAs0.38P0.62/InP QW is presented by performing detailed temperature and excitation intensity dependent PL measurements and subsequent in-depth analysis using the proposed model. Versatility of the new formalism is tested on a few other semiconductor materials, e.g. GaN, nanotextured GaN, AlGaN and InGaN, which are known to have a significant contribution from the localized states. A quantitative evaluation of the fractional contribution of the localized states is essential for understanding the temperature dependence of the PL peak energy of bulk and QW well structures having a large contribution of the band-tail states.

Multiple quantum coherence spectroscopy.

PubMed

Mathew, Nathan A; Yurs, Lena A; Block, Stephen B; Pakoulev, Andrei V; Kornau, Kathryn M; Wright, John C

2009-08-20

Multiple quantum coherences provide a powerful approach for studies of complex systems because increasing the number of quantum states in a quantum mechanical superposition state increases the selectivity of a spectroscopic measurement. We show that frequency domain multiple quantum coherence multidimensional spectroscopy can create these superposition states using different frequency excitation pulses. The superposition state is created using two excitation frequencies to excite the symmetric and asymmetric stretch modes in a rhodium dicarbonyl chelate and the dynamic Stark effect to climb the vibrational ladders involving different overtone and combination band states. A monochromator resolves the free induction decay of different coherences comprising the superposition state. The three spectral dimensions provide the selectivity required to observe 19 different spectral features associated with fully coherent nonlinear processes involving up to 11 interactions with the excitation fields. The different features act as spectroscopic probes of the diagonal and off-diagonal parts of the molecular potential energy hypersurface. This approach can be considered as a coherent pump-probe spectroscopy where the pump is a series of excitation pulses that prepares a multiple quantum coherence and the probe is another series of pulses that creates the output coherence.

Luminescence of quantum-well exciton polaritons from microstructured AlxGa1-xAs-GaAs multiple quantum wells

NASA Astrophysics Data System (ADS)

Kohl, M.; Heitmann, D.; Grambow, P.; Ploog, K.

1988-06-01

Periodic multiple-quantum-well wires have been prepared by etching five-layer quantum-well structures through a holographically prepared mask. The periodicity was 380 nm, the lateral confinement 180 nm, and the quantum-well width 13, nm. The luminescence from these microstructured systems in the frequency regime of the one-electron-one-heavy-hole transition was strongly polarized with the electric field perpendicular to the periodic structure. This effect was caused by the resonantly enhanced emission of quantum-well-exciton (QWE) polaritons. Excitation of QWE polaritons was also observed in reflection measurements on the microstructured samples.

On-chip coherent conversion of photonic quantum entanglement between different degrees of freedom

PubMed Central

Feng, Lan-Tian; Zhang, Ming; Zhou, Zhi-Yuan; Li, Ming; Xiong, Xiao; Yu, Le; Shi, Bao-Sen; Guo, Guo-Ping; Dai, Dao-Xin; Ren, Xi-Feng; Guo, Guang-Can

2016-01-01

In the quantum world, a single particle can have various degrees of freedom to encode quantum information. Controlling multiple degrees of freedom simultaneously is necessary to describe a particle fully and, therefore, to use it more efficiently. Here we introduce the transverse waveguide-mode degree of freedom to quantum photonic integrated circuits, and demonstrate the coherent conversion of a photonic quantum state between path, polarization and transverse waveguide-mode degrees of freedom on a single chip. The preservation of quantum coherence in these conversion processes is proven by single-photon and two-photon quantum interference using a fibre beam splitter or on-chip beam splitters. These results provide us with the ability to control and convert multiple degrees of freedom of photons for quantum photonic integrated circuit-based quantum information process. PMID:27321821

On-chip coherent conversion of photonic quantum entanglement between different degrees of freedom.

PubMed

Feng, Lan-Tian; Zhang, Ming; Zhou, Zhi-Yuan; Li, Ming; Xiong, Xiao; Yu, Le; Shi, Bao-Sen; Guo, Guo-Ping; Dai, Dao-Xin; Ren, Xi-Feng; Guo, Guang-Can

2016-06-20

In the quantum world, a single particle can have various degrees of freedom to encode quantum information. Controlling multiple degrees of freedom simultaneously is necessary to describe a particle fully and, therefore, to use it more efficiently. Here we introduce the transverse waveguide-mode degree of freedom to quantum photonic integrated circuits, and demonstrate the coherent conversion of a photonic quantum state between path, polarization and transverse waveguide-mode degrees of freedom on a single chip. The preservation of quantum coherence in these conversion processes is proven by single-photon and two-photon quantum interference using a fibre beam splitter or on-chip beam splitters. These results provide us with the ability to control and convert multiple degrees of freedom of photons for quantum photonic integrated circuit-based quantum information process.

Quantum Double of Yangian of strange Lie superalgebra Qn and multiplicative formula for universal R-matrix

NASA Astrophysics Data System (ADS)

Stukopin, Vladimir

2018-02-01

Main result is the multiplicative formula for universal R-matrix for Quantum Double of Yangian of strange Lie superalgebra Qn type. We introduce the Quantum Double of the Yangian of the strange Lie superalgebra Qn and define its PBW basis. We compute the Hopf pairing for the generators of the Yangian Double. From the Hopf pairing formulas we derive a factorized multiplicative formula for the universal R-matrix of the Yangian Double of the Lie superalgebra Qn . After them we obtain coefficients in this multiplicative formula for universal R-matrix.

Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hammersley, S.; Dawson, P.; Kappers, M. J.

2015-09-28

InGaN-based light emitting diodes and multiple quantum wells designed to emit in the green spectral region exhibit, in general, lower internal quantum efficiencies than their blue-emitting counter parts, a phenomenon referred to as the “green gap.” One of the main differences between green-emitting and blue-emitting samples is that the quantum well growth temperature is lower for structures designed to emit at longer wavelengths, in order to reduce the effects of In desorption. In this paper, we report on the impact of the quantum well growth temperature on the optical properties of InGaN/GaN multiple quantum wells designed to emit at 460 nmmore » and 530 nm. It was found that for both sets of samples increasing the temperature at which the InGaN quantum well was grown, while maintaining the same indium composition, led to an increase in the internal quantum efficiency measured at 300 K. These increases in internal quantum efficiency are shown to be due reductions in the non-radiative recombination rate which we attribute to reductions in point defect incorporation.« less

Frequency doubling of an InGaAs multiple quantum wells semiconductor disk laser

NASA Astrophysics Data System (ADS)

Lidan, Jiang; Renjiang, Zhu; Maohua, Jiang; Dingke, Zhang; Yuting, Cui; Peng, Zhang; Yanrong, Song

2018-01-01

We demonstrate a good beam quality 483 nm blue coherent radiation from a frequency doubled InGaAs multiple quantum wells semiconductor disk laser. The gain chip is consisted of 6 repeats of strain uncompensated InGaAs/GaAs quantum wells and 25 pairs of GaAs/AlAs distributed Bragg reflector. A 4 × 4 × 7 mm3 type I phase-matched BBO nonlinear crystal is used in a V-shaped laser cavity for the second harmonic generation, and 210 mW blue output power is obtained when the absorbed pump power is 3.5 W. The M2 factors of the laser beam in x and y directions are about 1.04 and 1.01, respectively. The output power of the blue laser is limited by the relatively small number of the multiple quantum wells, and higher power can be expected by increasing the number of the multiple quantum wells and improving the heat management of the laser.

Quantum Sets and Clifford Algebras

NASA Astrophysics Data System (ADS)

Finkelstein, David

1982-06-01

The mathematical language presently used for quantum physics is a high-level language. As a lowest-level or basic language I construct a quantum set theory in three stages: (1) Classical set theory, formulated as a Clifford algebra of “ S numbers” generated by a single monadic operation, “bracing,” Br = {…}. (2) Indefinite set theory, a modification of set theory dealing with the modal logical concept of possibility. (3) Quantum set theory. The quantum set is constructed from the null set by the familiar quantum techniques of tensor product and antisymmetrization. There are both a Clifford and a Grassmann algebra with sets as basis elements. Rank and cardinality operators are analogous to Schroedinger coordinates of the theory, in that they are multiplication or “ Q-type” operators. “ P-type” operators analogous to Schroedinger momenta, in that they transform the Q-type quantities, are bracing (Br), Clifford multiplication by a set X, and the creator of X, represented by Grassmann multiplication c( X) by the set X. Br and its adjoint Br* form a Bose-Einstein canonical pair, and c( X) and its adjoint c( X)* form a Fermi-Dirac or anticanonical pair. Many coefficient number systems can be employed in this quantization. I use the integers for a discrete quantum theory, with the usual complex quantum theory as limit. Quantum set theory may be applied to a quantum time space and a quantum automaton.

Effect of Dopant Activation on Device Characteristics of InGaN-based Light Emitting Diodes

NASA Astrophysics Data System (ADS)

Lacroce, Nicholas; Liu, Guangyu; Tan, Chee-Keong; Arif, Ronald A.; Lee, Soo Min; Tansu, Nelson

2015-03-01

Achieving high uniformity in growths and device characteristics of InGaN-based light-emitting diodes (LEDs) is important for large scale manufacturing. Dopant activation and maintaining control of variables affecting dopant activation are critical steps in the InGaN-based light emitting diodes (LEDs) fabrication process. In the epitaxy of large scale production LEDs, in-situ post-growth annealing is used for activating the Mg acceptor dopant in the p-AlGaN and p-GaN of the LEDs. However, the annealing temperature varies with respect to position in the reactor chamber, leading to severe uniform dopant activation issue across the devices. Thus, it is important to understand how the temperature gradient and the resulting variance in Mg acceptor activation will alter the device properties. In this work, we examine the effect of varying p-type doping levels in the p-GaN layers and AlGaN electron blocking layer of the GaN LEDs on the optoelectronic properties including the band profile, carrier concentration, current density, output power and quantum efficiency. By understanding the variations and its effect, the identification of the most critical p-type doping layer strategies to address this variation will be clarified.

Multi-dimensional photonic states from a quantum dot

NASA Astrophysics Data System (ADS)

Lee, J. P.; Bennett, A. J.; Stevenson, R. M.; Ellis, D. J. P.; Farrer, I.; Ritchie, D. A.; Shields, A. J.

2018-04-01

Quantum states superposed across multiple particles or degrees of freedom offer an advantage in the development of quantum technologies. Creating these states deterministically and with high efficiency is an ongoing challenge. A promising approach is the repeated excitation of multi-level quantum emitters, which have been shown to naturally generate light with quantum statistics. Here we describe how to create one class of higher dimensional quantum state, a so called W-state, which is superposed across multiple time bins. We do this by repeated Raman scattering of photons from a charged quantum dot in a pillar microcavity. We show this method can be scaled to larger dimensions with no reduction in coherence or single-photon character. We explain how to extend this work to enable the deterministic creation of arbitrary time-bin encoded qudits.

Carrier multiplication detected through transient photocurrent in device-grade films of lead selenide quantum dots

DOE PAGES

Gao, Jianbo; Fidler, Andrew F.; Klimov, Victor I.

2015-09-08

In carrier multiplication, the absorption of a single photon results in two or more electron–hole pairs. Quantum dots are promising materials for implementing carrier multiplication principles in real-life technologies. So far, however, most of research in this area has focused on optical studies of solution samples with yet to be proven relevance to practical devices. We report ultra-fast electro-optical studies of device-grade films of electronically coupled quantum dots that allow us to observe multiplication directly in the photocurrent. Our studies help rationalize previous results from both optical spectroscopy and steady-state photocurrent measurements and also provide new insights into effects ofmore » electric field and ligand treatments on multiexciton yields. Importantly, we demonstrate that using appropriate chemical treatments of the films, extra charges produced by carrier multiplication can be extracted from the quantum dots before they are lost to Auger recombination and hence can contribute to photocurrent of practical devices.« less

Carrier multiplication detected through transient photocurrent in device-grade films of lead selenide quantum dots

PubMed Central

Gao, Jianbo; Fidler, Andrew F.; Klimov, Victor I.

2015-01-01

In carrier multiplication, the absorption of a single photon results in two or more electron–hole pairs. Quantum dots are promising materials for implementing carrier multiplication principles in real-life technologies. So far, however, most of research in this area has focused on optical studies of solution samples with yet to be proven relevance to practical devices. Here we report ultrafast electro-optical studies of device-grade films of electronically coupled quantum dots that allow us to observe multiplication directly in the photocurrent. Our studies help rationalize previous results from both optical spectroscopy and steady-state photocurrent measurements and also provide new insights into effects of electric field and ligand treatments on multiexciton yields. Importantly, we demonstrate that using appropriate chemical treatments of the films, extra charges produced by carrier multiplication can be extracted from the quantum dots before they are lost to Auger recombination and hence can contribute to photocurrent of practical devices. PMID:26345390

Single-shot secure quantum network coding on butterfly network with free public communication

NASA Astrophysics Data System (ADS)

Owari, Masaki; Kato, Go; Hayashi, Masahito

2018-01-01

Quantum network coding on the butterfly network has been studied as a typical example of quantum multiple cast network. We propose a secure quantum network code for the butterfly network with free public classical communication in the multiple unicast setting under restricted eavesdropper’s power. This protocol certainly transmits quantum states when there is no attack. We also show the secrecy with shared randomness as additional resource when the eavesdropper wiretaps one of the channels in the butterfly network and also derives the information sending through public classical communication. Our protocol does not require verification process, which ensures single-shot security.

An elementary quantum network using robust nuclear spin qubits in diamond

NASA Astrophysics Data System (ADS)

Kalb, Norbert; Reiserer, Andreas; Humphreys, Peter; Blok, Machiel; van Bemmelen, Koen; Twitchen, Daniel; Markham, Matthew; Taminiau, Tim; Hanson, Ronald

Quantum registers containing multiple robust qubits can form the nodes of future quantum networks for computation and communication. Information storage within such nodes must be resilient to any type of local operation. Here we demonstrate multiple robust memories by employing five nuclear spins adjacent to a nitrogen-vacancy defect centre in diamond. We characterize the storage of quantum superpositions and their resilience to entangling attempts with the electron spin of the defect centre. The storage fidelity is found to be limited by the probabilistic electron spin reset after failed entangling attempts. Control over multiple memories is then utilized to encode states in decoherence protected subspaces with increased robustness. Furthermore we demonstrate memory control in two optically linked network nodes and characterize the storage capabilities of both memories in terms of the process fidelity with the identity. These results pave the way towards multi-qubit quantum algorithms in a remote network setting.

Ternary AlGaN Alloys with High Al Content and Enhanced Compositional Homogeneity Grown by Plasma-Assisted Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Fellmann, Vincent; Jaffrennou, Périne; Sam-Giao, Diane; Gayral, Bruno; Lorenz, Katharina; Alves, Eduardo; Daudin, Bruno

2011-03-01

We have studied the influence of III/N flux ratio and growth temperature on structural and optical properties of high Al-content, around 50-60%, AlGaN alloy layers grown by plasma-assisted molecular beam epitaxy. In a first part, based on structural analysis by Rutherford Backscattering Spectroscopy, we establish that a III/N flux ratio slightly above 1 produces layers with low amount of structural defects. In a second part, we study the effect of growth temperature on structural and optical properties of layers grown with previously determined optimal III/N flux ratio. We find that optimal growth temperatures for Al0.50Ga0.50N layers with compositional homogeneity related with narrow UV photoluminescence properties are in the low temperature range for growing GaN layers, i.e., 650-680 °C. We propose that lowering Ga adatom diffusion on the surface favors random incorporation of both Ga and Al adatoms on wurtzite crystallographic sites leading to the formation of an homogeneous alloy.

Remote Entanglement by Coherent Multiplication of Concurrent Quantum Signals

NASA Astrophysics Data System (ADS)

Roy, Ananda; Jiang, Liang; Stone, A. Douglas; Devoret, Michel

2015-10-01

Concurrent remote entanglement of distant, noninteracting quantum entities is a crucial function for quantum information processing. In contrast with the existing protocols which employ the addition of signals to generate entanglement between two remote qubits, the continuous variable protocol we present is based on the multiplication of signals. This protocol can be straightforwardly implemented by a novel Josephson junction mixing circuit. Our scheme would be able to generate provable entanglement even in the presence of practical imperfections: finite quantum efficiency of detectors and undesired photon loss in current state-of-the-art devices.

Optically induced excitonic electroabsorption in a periodically delta-doped InGaAs/GaAs multiple quantum well structure

NASA Technical Reports Server (NTRS)

Larsson, A.; Maserjian, J.

1991-01-01

Large optically induced Stark shifts have been observed in a periodically delta-doped InGaAs/GaAs multiple quantum well structure. With an excitation intensity of 10 mW/sq cm, an absolute quantum well absorption change of 7000/cm was measured with a corresponding differential absorption change as high as 80 percent. The associated maximum change in the quantum well refractive index is 0.04. This material is promising for device development for all-optical computing and signal processing.

A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Davies, M. J., E-mail: Matthew.Davies-2@Manchester.ac.uk; Hammersley, S.; Dawson, P.

In this paper, we report on a detailed spectroscopic study of the optical properties of InGaN/GaN multiple quantum well structures, both with and without a Si-doped InGaN prelayer. In photoluminescence and photoluminescence excitation spectroscopy, a 2nd emission band, occurring at a higher energy, was identified in the spectrum of the multiple quantum well structure containing the InGaN prelayer, originating from the first quantum well in the stack. Band structure calculations revealed that a reduction in the resultant electric field occurred in the quantum well immediately adjacent to the InGaN prelayer, therefore leading to a reduction in the strength of themore » quantum confined Stark effect in this quantum well. The partial suppression of the quantum confined Stark effect in this quantum well led to a modified (higher) emission energy and increased radiative recombination rate. Therefore, we ascribed the origin of the high energy emission band to recombination from the 1st quantum well in the structure. Study of the temperature dependent recombination dynamics of both samples showed that the decay time measured across the spectrum was strongly influenced by the 1st quantum well in the stack (in the sample containing the prelayer) leading to a shorter average room temperature lifetime in this sample. The room temperature internal quantum efficiency of the prelayer containing sample was found to be higher than the reference sample (36% compared to 25%) which was thus attributed to the faster radiative recombination rate of the 1st quantum well providing a recombination pathway that is more competitive with non-radiative recombination processes.« less

Scanning gate imaging of two coupled quantum dots in single-walled carbon nanotubes.

PubMed

Zhou, Xin; Hedberg, James; Miyahara, Yoichi; Grutter, Peter; Ishibashi, Koji

2014-12-12

Two coupled single wall carbon nanotube quantum dots in a multiple quantum dot system were characterized by using a low temperature scanning gate microscopy (SGM) technique, at a temperature of 170 mK. The locations of single wall carbon nanotube quantum dots were identified by taking the conductance images of a single wall carbon nanotube contacted by two metallic electrodes. The single electron transport through single wall carbon nanotube multiple quantum dots has been observed by varying either the position or voltage bias of a conductive atomic force microscopy tip. Clear hexagonal patterns were observed in the region of the conductance images where only two sets of overlapping conductance rings are visible. The values of coupling capacitance over the total capacitance of the two dots, C(m)/C(1(2)) have been extracted to be 0.21 ∼ 0.27 and 0.23 ∼ 0.28, respectively. In addition, the interdot coupling (conductance peak splitting) has also been confirmed in both conductance image measurement and current-voltage curves. The results show that a SGM technique enables spectroscopic investigation of coupled quantum dots even in the presence of unexpected multiple quantum dots.

Enhancement of optical Kerr effect in quantum-cascade lasers with multiple resonance levels.

PubMed

Bai, Jing; Citrin, D S

2008-08-18

In this paper, we investigated the optical Kerr lensing effect in quantum-cascade lasers with multiple resonance levels. The Kerr refractive index n2 is obtained through the third-order susceptibility at the fundamental frequency chi(3)( omega; omega, omega,-omega). Resonant two-photon processes are found to have almost equal contributions to chi(3)( omega; omega, omega,-omega) as the single-photon processes, which result in the predicted enhancement of the positive nonlinear (Kerr) refractive index, and thus may enhance mode-locking of quantum-cascade lasers. Moreover, we also demonstrate an isospectral optimization strategy for further improving n2 through the band-structure design, in order to boost the multimode performance of quantum-cascade lasers. Simulation results show that the optimized stepwise multiple-quantum-well structure has n2 approximately 10-8 cm2/W, a twofold enhancement over the original flat quantum-well structure. This leads to a refractive-index change (delta)n of about 0.01, which is at the upper bound of those reported for typical Kerr medium. This stronger Kerr refractive index may be important for quantum-cascade lasers ultimately to demonstrate self-mode-locking.

Simultaneous entanglement swapping of multiple orbital angular momentum states of light.

PubMed

Zhang, Yingwen; Agnew, Megan; Roger, Thomas; Roux, Filippus S; Konrad, Thomas; Faccio, Daniele; Leach, Jonathan; Forbes, Andrew

2017-09-21

High-bit-rate long-distance quantum communication is a proposed technology for future communication networks and relies on high-dimensional quantum entanglement as a core resource. While it is known that spatial modes of light provide an avenue for high-dimensional entanglement, the ability to transport such quantum states robustly over long distances remains challenging. To overcome this, entanglement swapping may be used to generate remote quantum correlations between particles that have not interacted; this is the core ingredient of a quantum repeater, akin to repeaters in optical fibre networks. Here we demonstrate entanglement swapping of multiple orbital angular momentum states of light. Our approach does not distinguish between different anti-symmetric states, and thus entanglement swapping occurs for several thousand pairs of spatial light modes simultaneously. This work represents the first step towards a quantum network for high-dimensional entangled states and provides a test bed for fundamental tests of quantum science.Entanglement swapping in high dimensions requires large numbers of entangled photons and consequently suffers from low photon flux. Here the authors demonstrate entanglement swapping of multiple spatial modes of light simultaneously, without the need for increasing the photon numbers with dimension.

Harmonic Quantum Coherence of Multiple Excitons in PbS/CdS Core-Shell Nanocrystals

NASA Astrophysics Data System (ADS)

Tahara, Hirokazu; Sakamoto, Masanori; Teranishi, Toshiharu; Kanemitsu, Yoshihiko

2017-12-01

The generation and recombination dynamics of multiple excitons in nanocrystals (NCs) have attracted much attention from the viewpoints of fundamental physics and device applications. However, the quantum coherence of multiple exciton states in NCs still remains unclear due to a lack of experimental support. Here, we report the first observation of harmonic dipole oscillations in PbS/CdS core-shell NCs using a phase-locked interference detection method for transient absorption. From the ultrafast coherent dynamics and excitation-photon-fluence dependence of the oscillations, we found that multiple excitons cause the harmonic dipole oscillations with ω , 2 ω , and 3 ω oscillations, even though the excitation pulse energy is set to the exciton resonance frequency, ω . This observation is closely related to the quantum coherence of multiple exciton states in NCs, providing important insights into multiple exciton generation mechanisms.

Nonadiabatic quantum path analysis of high-order harmonic generation: Role of the carrier-envelope phase on short and long paths

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sansone, G.; Stagira, S.; Nisoli, M.

2004-07-01

High-order harmonic generation process in the few- and multiple-optical-cycle regime is theoretically investigated, using the saddle-point method generalized to account for nonadiabatic effects. The influence of the carrier-envelope phase of the driving pulses on the various electron quantum paths is analyzed. We demonstrate that the short and long quantum paths are influenced in different ways by the carrier-envelope phase. In particular, we show that clear phase effects are visible on the long quantum paths even in the multiple-optical-cycle regime, while the short quantum paths are significantly influenced by the carrier-envelope phase only in the few-optical-cycle regime.

The set of triple-resonance sequences with a multiple quantum coherence evolution period

NASA Astrophysics Data System (ADS)

Koźmiński, Wiktor; Zhukov, Igor

2004-12-01

The new pulse sequence building block that relies on evolution of heteronuclear multiple quantum coherences is proposed. The particular chemical shifts are obtained in multiple quadrature, using linear combinations of frequencies taken from spectra measured at different quantum levels. The pulse sequences designed in this way consist of small number of RF-pulses, are as short as possible, and could be applied for determination of coupling constants. The examples presented involve 2D correlations H NCO, H NCA, H N(CO) CA, and H(N) COCA via heteronuclear zero and double coherences, as well as 2D H NCOCA technique with simultaneous evolution of triple and three distinct single quantum coherences. Applications of the new sequences are presented for 13C, 15N-labeled ubiquitin.

Spin-locking of half-integer quadrupolar nuclei in nuclear magnetic resonance of solids: second-order quadrupolar and resonance offset effects.

PubMed

Ashbrook, Sharon E; Wimperis, Stephen

2009-11-21

Spin-locking of spin I=3/2 and I=5/2 nuclei in the presence of small resonance offset and second-order quadrupolar interactions has been investigated using both exact and approximate theoretical and experimental nuclear magnetic resonance (NMR) approaches. In the presence of second-order quadrupolar interactions, we show that the initial rapid dephasing that arises from the noncommutation of the state prepared by the first pulse and the spin-locking Hamiltonian gives rise to tensor components of the spin density matrix that are antisymmetric with respect to inversion, in addition to those symmetric with respect to inversion that are found when only a first-order quadrupolar interaction is considered. We also find that spin-locking of multiple-quantum coherence in a static solid is much more sensitive to resonance offset than that of single-quantum coherence and show that good spin-locking of multiple-quantum coherence can still be achieved if the resonance offset matches the second-order shift of the multiple-quantum coherence in the appropriate reference frame. Under magic angle spinning (MAS) conditions, and in the "adiabatic" limit, we demonstrate that rotor-driven interconversion of central-transition single- and three-quantum coherences for a spin I=3/2 nucleus can be best achieved by performing the spin-locking on resonance with the three-quantum coherence in the three-quantum frame. Finally, in the "sudden" MAS limit, we show that spin I=3/2 spin-locking behavior is generally similar to that found in static solids, except when the central-transition nutation rate matches a multiple of the MAS rate and a variety of rotary resonance phenomena are observed depending on the internal spin interactions present. This investigation should aid in the application of spin-locking techniques to multiple-quantum NMR of quadrupolar nuclei and of cross-polarization and homonuclear dipolar recoupling experiments to quadrupolar nuclei such as (7)Li, (11)B, (17)O, (23)Na, and (27)Al.

Photovoltaic driven multiple quantum well optical modulator

NASA Technical Reports Server (NTRS)

Maserjian, Joseph (Inventor)

1990-01-01

Multiple quantum well (MQW) structures (12) are utilized to provide real-time, reliable, high-performance, optically-addressed spatial-light modulators (SLM) (10). The optically-addressed SLM comprises a vertical stack of quantum well layers (12a) within the penetration depth of an optical write signal 18, a plurality of space charge barriers (12b) having predetermined tunneling times by control of doping and thickness. The material comprising the quantum well layers has a lower bandgap than that of the space charge barrier layers. The write signal modulates a read signal (20). The modulation sensitivity of the device is high and no external voltage source is required. In a preferred embodiment, the SLM having interleaved doped semiconductor layers for driving the MQW photovoltaically is characterized by the use of a shift analogous to the Moss-Burnstein shift caused by the filling of two-dimensional states in the multiple quantum wells, thus allowing high modulation sensitivity in very narrow wells. Arrays (30) may be formed with a plurality of the modulators.

Evolution of multiple quantum coherences with scaled dipolar Hamiltonian

NASA Astrophysics Data System (ADS)

Sánchez, Claudia M.; Buljubasich, Lisandro; Pastawski, Horacio M.; Chattah, Ana K.

2017-08-01

In this article, we introduce a pulse sequence which allows the monitoring of multiple quantum coherences distribution of correlated spin states developed with scaled dipolar Hamiltonian. The pulse sequence is a modification of our previous Proportionally Refocused Loschmidt echo (PRL echo) with phase increment, in order to verify the accuracy of the weighted coherent quantum dynamics. The experiments were carried out with different scaling factors to analyze the evolution of the total magnetization, the time dependence of the multiple quantum coherence orders, and the development of correlated spins clusters. In all cases, a strong dependence between the evolution rate and the weighting factor is observed. Remarkably, all the curves appeared overlapped in a single trend when plotted against the self-time, a new time scale that includes the scaling factor into the evolution time. In other words, the spin system displayed always the same quantum evolution, slowed down as the scaling factor decreases, confirming the high performance of the new pulse sequence.

Self-assembly of vertically aligned quantum ring-dot structure by Multiple Droplet Epitaxy

NASA Astrophysics Data System (ADS)

Elborg, Martin; Noda, Takeshi; Mano, Takaaki; Kuroda, Takashi; Yao, Yuanzhao; Sakuma, Yoshiki; Sakoda, Kazuaki

2017-11-01

We successfully grow vertically aligned quantum ring-dot structures by Multiple Droplet Epitaxy technique. The growth is achieved by depositing GaAs quantum rings in a first droplet epitaxy process which are subsequently covered by a thin AlGaAs barrier. In a second droplet epitaxy process, Ga droplets preferentially position in the center indentation of the ring as well as attached to the edge of the ring in [ 1 1 bar 0 ] direction. By designing the ring geometry, full selectivity for the center position of the ring is achieved where we crystallize the droplets into quantum dots. The geometry of the ring and dot as well as barrier layer can be controlled in separate growth steps. This technique offers great potential for creating complex quantum molecules for novel quantum information technologies.

Strong quantum-confined Stark effect in a lattice-matched GeSiSn/GeSn multi-quantum-well structure

NASA Astrophysics Data System (ADS)

Peng, Ruizhi; Chunfuzhang; Han, Genquan; Hao, Yue

2017-06-01

This paper presents modeling and simulation of a multiple quantum well structure formed with Ge0.95Sn0.05 quantum wells separated by Ge0.51Si0.35Sn0.14 barriers for the applications. These alloy compositions are chosen to satisfy two conditions simultaneously: type-I band alignment between Ge0.95Sn0.05/Ge0.51Si0.35Sn0.14 and a lattice match between wells and barriers. This lattice match ensures that the strain-free structure can be grown upon a relaxed Ge0.51Si0.35Sn0.14 buffer on a silicon substrate - a CMOS compatible process. A electro-absorption modulator with the Ge0.95Sn0.05/Ge0.51Si0.35Sn0.14 multiple quantum well structure based on quantum-confined Stark effect(QCSE) is demonstrated in theory. The energy band diagrams of the GeSiSn/GeSn multi-quantum-well structure at 0 and 0.5V bias are calculated, respectively. And the corresponding absorption coefficients as a function of cut-off energy for this multiple quantum well structure at 0 and 0.5Vbias are also obtained, respectively. The reduction of cut-off energy is observed with the applying of the external electric field, indicating a strong QCSE in the structure.

Controlled quantum perfect teleportation of multiple arbitrary multi-qubit states

NASA Astrophysics Data System (ADS)

Shi, Runhua; Huang, Liusheng; Yang, Wei; Zhong, Hong

2011-12-01

We present an efficient controlled quantum perfect teleportation scheme. In our scheme, multiple senders can teleport multiple arbitrary unknown multi-qubit states to a single receiver via a previously shared entanglement state with the help of one or more controllers. Furthermore, our scheme has a very good performance in the measurement and operation complexity, since it only needs to perform Bell state and single-particle measurements and to apply Controlled-Not gate and other single-particle unitary operations. In addition, compared with traditional schemes, our scheme needs less qubits as the quantum resources and exchanges less classical information, and thus obtains higher communication efficiency.

Joint measurement of multiple noncommuting parameters

NASA Astrophysics Data System (ADS)

Li, Jiamin; Liu, Yuhong; Cui, Liang; Huo, Nan; Assad, Syed M.; Li, Xiaoying; Ou, Z. Y.

2018-05-01

Although quantum metrology allows us to make precision measurements beyond the standard quantum limit, it mostly works on the measurement of only one observable due to the Heisenberg uncertainty relation on the measurement precision of noncommuting observables for one system. In this paper, we study the schemes of joint measurement of multiple observables which do not commute with each other using the quantum entanglement between two systems. We focus on analyzing the performance of a SU(1,1) nonlinear interferometer on fulfilling the task of joint measurement. The results show that the information encoded in multiple noncommuting observables on an optical field can be simultaneously measured with a signal-to-noise ratio higher than the standard quantum limit, and the ultimate limit of each observable is still the Heisenberg limit. Moreover, we find a resource conservation rule for the joint measurement.

Band-edge absorption coefficients from photoluminescence in semiconductor multiple quantum wells

NASA Technical Reports Server (NTRS)

Kost, Alan; Zou, Yao; Dapkus, P. D.; Garmire, Elsa; Lee, H. C.

1989-01-01

A novel approach to determining absorption coefficients in thin films using luminescence is described. The technique avoids many of the difficulties typically encountered in measurements of thin samples, Fabry-Perot effects, for example, and can be applied to a variety of materials. The absorption edge for GaAs/AlGaAs multiple quantum well structures, with quantum well widths ranging from 54 to 193 A is examined. Urbach (1953) parameters and excitonic linewidths are tabulated.

Quantum Dots for Molecular Pathology

PubMed Central

True, Lawrence D.; Gao, Xiaohu

2007-01-01

Assessing malignant tumors for expression of multiple biomarkers provides data that are critical for patient management. Quantum dot-conjugated probes to specific biomarkers are powerful tools that can be applied in a multiplex manner to single tissue sections of biopsies to measure expression levels of multiple biomarkers. PMID:17251330

Investigation of Photoluminescence and Photocurrent in InGaAsP/InP Strained Multiple Quantum Well Heterostructures

NASA Technical Reports Server (NTRS)

Raisky, O. Y.; Wang, W. B.; Alfano, R. R.; Reynolds, C. L., Jr.; Swaminathan, V.

1997-01-01

Multiple quantum well InGaAsP/InP p-i-n laser heterostructures with different barrier thicknesses have been investigated using photoluminescence (PL) and photocurrent (PC) measurements. The observed PL spectrum and peak positions are in good agreement with those obtained from transfer matrix calculations. Comparing the measured quantum well PC with calculated carrier escape rates, the photocurrent changes are found to be governed by the temperature dependence of the electron escape time.

Relating Out-of-Time-Order Correlations to Entanglement via Multiple-Quantum Coherences.

PubMed

Gärttner, Martin; Hauke, Philipp; Rey, Ana Maria

2018-01-26

Out-of-time-order correlations (OTOCs) characterize the scrambling, or delocalization, of quantum information over all the degrees of freedom of a system and thus have been proposed as a proxy for chaos in quantum systems. Recent experimental progress in measuring OTOCs calls for a more thorough understanding of how these quantities characterize complex quantum systems, most importantly in terms of the buildup of entanglement. Although a connection between OTOCs and entanglement entropy has been derived, the latter only quantifies entanglement in pure systems and is hard to access experimentally. In this work, we formally demonstrate that the multiple-quantum coherence spectra, a specific family of OTOCs well known in NMR, can be used as an entanglement witness and as a direct probe of multiparticle entanglement. Our results open a path to experimentally testing the fascinating idea that entanglement is the underlying glue that links thermodynamics, statistical mechanics, and quantum gravity.

Relating Out-of-Time-Order Correlations to Entanglement via Multiple-Quantum Coherences

NASA Astrophysics Data System (ADS)

Gärttner, Martin; Hauke, Philipp; Rey, Ana Maria

2018-01-01

Out-of-time-order correlations (OTOCs) characterize the scrambling, or delocalization, of quantum information over all the degrees of freedom of a system and thus have been proposed as a proxy for chaos in quantum systems. Recent experimental progress in measuring OTOCs calls for a more thorough understanding of how these quantities characterize complex quantum systems, most importantly in terms of the buildup of entanglement. Although a connection between OTOCs and entanglement entropy has been derived, the latter only quantifies entanglement in pure systems and is hard to access experimentally. In this work, we formally demonstrate that the multiple-quantum coherence spectra, a specific family of OTOCs well known in NMR, can be used as an entanglement witness and as a direct probe of multiparticle entanglement. Our results open a path to experimentally testing the fascinating idea that entanglement is the underlying glue that links thermodynamics, statistical mechanics, and quantum gravity.

On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prudaev, I. A., E-mail: funcelab@gmail.com; Kopyev, V. V.; Romanov, I. S.

The dependences of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes on the temperature and excitation level are studied. The experiment is performed for two luminescence excitation modes. A comparison of the results obtained during photo- and electroluminescence shows an additional (to the loss associated with Auger recombination) low-temperature loss in the high-density current region. This causes inversion of the temperature dependence of the quantum efficiency at temperatures lower than 220–300 K. Analysis shows that the loss is associated with electron leakage from the light-emitting-diode active region. The experimental data are explained using the ballistic-overflow model. The simulationmore » results are in qualitative agreement with the experimental dependences of the quantum efficiency on temperature and current density.« less

AlGaN Ultraviolet Detectors for Dual-Band UV Detection

NASA Technical Reports Server (NTRS)

Miko, Laddawan; Franz, David; Stahle, Carl M.; Yan, Feng; Guan, Bing

2010-01-01

This innovation comprises technology that has the ability to measure at least two ultraviolet (UV) bands using one detector without relying on any external optical filters. This allows users to build a miniature UVA and UVB monitor, as well as to develop compact, multicolor imaging technologies for flame temperature sensing, air-quality control, and terrestrial/counter-camouflage/biosensing applications.

The Effect of Radiation on the Electrical Properties of Aluminum Gallium Nitride/Gallium Nitride Heterostructures

DTIC Science & Technology

2008-06-01

dopant compensation in both the AlGaN and GaN are the primary factors in the depopulation of the 2DEG. 33 Figure 10. Normalized mobility and...measured by activation analysis. Gold, copper and cobalt wires were irradiated at the position where the devices were to be attached on the fin in the

Lead Telluride Quantum Dot Solar Cells Displaying External Quantum Efficiencies Exceeding 120%

PubMed Central

2015-01-01

Multiple exciton generation (MEG) in semiconducting quantum dots is a process that produces multiple charge-carrier pairs from a single excitation. MEG is a possible route to bypass the Shockley-Queisser limit in single-junction solar cells but it remains challenging to harvest charge-carrier pairs generated by MEG in working photovoltaic devices. Initial yields of additional carrier pairs may be reduced due to ultrafast intraband relaxation processes that compete with MEG at early times. Quantum dots of materials that display reduced carrier cooling rates (e.g., PbTe) are therefore promising candidates to increase the impact of MEG in photovoltaic devices. Here we demonstrate PbTe quantum dot-based solar cells, which produce extractable charge carrier pairs with an external quantum efficiency above 120%, and we estimate an internal quantum efficiency exceeding 150%. Resolving the charge carrier kinetics on the ultrafast time scale with pump–probe transient absorption and pump–push–photocurrent measurements, we identify a delayed cooling effect above the threshold energy for MEG. PMID:26488847

The Misapplication of Probability Theory in Quantum Mechanics

NASA Astrophysics Data System (ADS)

Racicot, Ronald

2014-03-01

This article is a revision of two papers submitted to the APS in the past two and a half years. In these papers, arguments and proofs are summarized for the following: (1) The wrong conclusion by EPR that Quantum Mechanics is incomplete, perhaps requiring the addition of ``hidden variables'' for completion. Theorems that assume such ``hidden variables,'' such as Bell's theorem, are also wrong. (2) Quantum entanglement is not a realizable physical phenomenon and is based entirely on assuming a probability superposition model for quantum spin. Such a model directly violates conservation of angular momentum. (3) Simultaneous multiple-paths followed by a quantum particle traveling through space also cannot possibly exist. Besides violating Noether's theorem, the multiple-paths theory is based solely on probability calculations. Probability calculations by themselves cannot possibly represent simultaneous physically real events. None of the reviews of the submitted papers actually refuted the arguments and evidence that was presented. These analyses should therefore be carefully evaluated since the conclusions reached have such important impact in quantum mechanics and quantum information theory.

First-principles study of alloying effects on fluorine incorporation in Al x Ga1-x N alloys

NASA Astrophysics Data System (ADS)

Wang, Rong; Tan, Wei; Zhang, Jian; Chen, Feng-Xiang; Wei, Su-Huai

2018-02-01

Incorporation of fluorine (F) into the AlGaN layer is crucial to the fabrication of enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs). However, the understanding of properties of F doping in AlGaN alloys is rather limited. Using first-principles calculations and the special quasirandom structure (SQS) approach, we investigate the alloying effects on the doping properties of F-incorporated Al x Ga1-x N alloys. We find that substitutional F on N sites (FN) and interstitial F (Fi) are dominant defects for F in Al x Ga1-x N alloys. For these two types of defects, both the global composition x and the local motif surrounding the dopant play important roles. On contrary, the incorporation of substitutional F on Ga sites (FGa) or Al sites (FAl) are affected only by the composition x. We also find that there exists a large asymmetric bowing for the effective formation energies of FN and Fi. These results are explained in terms of local structural distortion and electronic effects. The mechanism discussed in this paper can also be used in understanding doping in other semiconductor alloys.

Challenges in graphene integration for high-frequency electronics

NASA Astrophysics Data System (ADS)

Giannazzo, F.; Fisichella, G.; Greco, G.; Roccaforte, F.

2016-06-01

This paper provides an overview of the state-of-the-art research on graphene (Gr) for high-frequency (RF) devices. After discussing current limitations of lateral Gr RF transistors, novel vertical devices concepts such as the Gr Base Hot Electron Transistor (GBHET) will be introduced and the main challenges in Gr integration within these architectures will be discussed. In particular, a GBHET device based on Gr/AlGaN/GaN heterostructure will be considered. An approach to the fabrication of this heterostructure by transfer of CVD grown Gr on copper to the AlGaN surface will be presented. The morphological and electrical properties of this system have been investigated at nanoscale by atomic force microscopy (AFM) and conductive atomic force microscopy (CAFM). In particular, local current-voltage measurements by the CAFM probe revealed the formation of a Schottky contact with low barrier height (˜0.41 eV) and excellent lateral uniformity between Gr and AlGaN. Basing on the electrical parameters extracted from this characterization, the theoretical performances of a GBHET formed by a metal/Al2O3/Gr/AlGaN/GaN stack have been evaluated.

Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications

NASA Astrophysics Data System (ADS)

Murugapandiyan, P.; Ravimaran, S.; William, J.; Meenakshi Sundaram, K.

2017-11-01

In this article, we present the DC and microwave characteristics of a novel 30 nm T-gate InAlN/AlN/GaN HEMT with AlGaN back-barrier. The device structure is simulated by using Synopsys Sentaurus TCAD Drift-Diffusion transport model at room temperature. The device features are heavily doped (n++ GaN) source/drain regions with Si3N4 passivated device surface for reducing the contact resistances and gate capacitances of the device, which uplift the microwave characteristics of the HEMTs. 30 nm gate length D-mode (E-mode) HEMT exhibited a peak drain current density Idmax of 2.3 (2.42) A/mm, transconductance gm of 1.24(1.65) S/mm, current gain cut-off frequency ft of 262 (246) GHz, power gain cut-off frequency fmax of 246(290) GHz and the three terminal off-state breakdown voltage VBR of 40(38) V. The preeminent microwave characteristics with the higher breakdown voltage of the proposed GaN-based HEMT are the expected to be the most optimistic applicant for future high power millimeter wave applications.

Tuning diagonal components of static linear and first nonlinear polarizabilities of doped quantum dots by Gaussian white noise

NASA Astrophysics Data System (ADS)

Ganguly, Jayanta; Ghosh, Manas

2015-07-01

We investigate the modulation of diagonal components of static linear (αxx, αyy) and first nonlinear (βxxx, βyyy) polarizabilities of quantum dots by Gaussian white noise. Quantum dot is doped with impurity represented by a Gaussian potential and repulsive in nature. The study reveals the importance of mode of application of noise (additive/multiplicative) on the polarizability components. The doped system is further exposed to a static external electric field of given intensity. As important observation we have found that the strength of additive noise becomes unable to influence the polarizability components. However, the multiplicative noise influences them conspicuously and gives rise to additional interesting features. Multiplicative noise even enhances the magnitude of the polarizability components immensely. The present investigation deems importance in view of the fact that noise seriously affects the optical properties of doped quantum dot devices.

Ultrafast carrier capture and Auger recombination in single GaN/InGaN multiple quantum well nanowires

DOE PAGES

Boubanga-Tombet, Stephane; Wright, Jeremy B.; Lu, Ping; ...

2016-11-04

Ultrafast optical microscopy is an important tool for examining fundamental phenomena in semiconductor nanowires with high temporal and spatial resolution. In this paper, we used this technique to study carrier dynamics in single GaN/InGaN core–shell nonpolar multiple quantum well nanowires. We find that intraband carrier–carrier scattering is the main channel governing carrier capture, while subsequent carrier relaxation is dominated by three-carrier Auger recombination at higher densities and bimolecular recombination at lower densities. Finally, the Auger constants in these nanowires are approximately 2 orders of magnitude lower than in planar InGaN multiple quantum wells, highlighting their potential for future light-emitting devices.

Measuring out-of-time-order correlations and multiple quantum spectra in a trapped-ion quantum magnet

NASA Astrophysics Data System (ADS)

Gärttner, Martin; Bohnet, Justin G.; Safavi-Naini, Arghavan; Wall, Michael L.; Bollinger, John J.; Rey, Ana Maria

2017-08-01

Controllable arrays of ions and ultracold atoms can simulate complex many-body phenomena and may provide insights into unsolved problems in modern science. To this end, experimentally feasible protocols for quantifying the buildup of quantum correlations and coherence are needed, as performing full state tomography does not scale favourably with the number of particles. Here we develop and experimentally demonstrate such a protocol, which uses time reversal of the many-body dynamics to measure out-of-time-order correlation functions (OTOCs) in a long-range Ising spin quantum simulator with more than 100 ions in a Penning trap. By measuring a family of OTOCs as a function of a tunable parameter we obtain fine-grained information about the state of the system encoded in the multiple quantum coherence spectrum, extract the quantum state purity, and demonstrate the buildup of up to 8-body correlations. Future applications of this protocol could enable studies of many-body localization, quantum phase transitions, and tests of the holographic duality between quantum and gravitational systems.

Classical system boundaries cannot be determined within quantum Darwinism

NASA Astrophysics Data System (ADS)

Fields, Chris

Multiple observers who interact with environmental encodings of the states of a macroscopic quantum system S as required by quantum Darwinism cannot demonstrate that they are jointly observing S without a joint a priori assumption of a classical boundary separating S from its environment E. Quantum Darwinism cannot, therefore, be regarded as providing a purely quantum-mechanical explanation of the "emergence" of classicality.

Multiple lobes in the far-field distribution of terahertz quantum-cascade lasers due to self-interference

DOE Office of Scientific and Technical Information (OSTI.GOV)

Röben, B., E-mail: roeben@pdi-berlin.de; Wienold, M.; Schrottke, L.

2016-06-15

The far-field distribution of the emission intensity of terahertz (THz) quantum-cascade lasers (QCLs) frequently exhibits multiple lobes instead of a single-lobed Gaussian distribution. We show that such multiple lobes can result from self-interference related to the typically large beam divergence of THz QCLs and the presence of an inevitable cryogenic operation environment including optical windows. We develop a quantitative model to reproduce the multiple lobes. We also demonstrate how a single-lobed far-field distribution can be achieved.

Highly efficient multiple-layer CdS quantum dot sensitized III-V solar cells.

PubMed

Lin, Chien-Chung; Han, Hau-Vei; Chen, Hsin-Chu; Chen, Kuo-Ju; Tsai, Yu-Lin; Lin, Wein-Yi; Kuo, Hao-Chung; Yu, Peichen

2014-02-01

In this review, the concept of utilization of solar spectrum in order to increase the solar cell efficiency is discussed. Among the three mechanisms, down-shifting effect is investigated in detail. Organic dye, rare-earth minerals and quantum dots are three most popular down-shift materials. While the enhancement of solar cell efficiency was not clearly observed in the past, the advances in quantum dot fabrication have brought strong response out of the hybrid platform of a quantum dot solar cell. A multiple layer structure, including PDMS as the isolation layer, is proposed and demonstrated. With the help of pulse spray system, precise control can be achieved and the optimized concentration can be found.

Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Quan, Zhijue, E-mail: quanzhijue@ncu.edu.cn; Wang, Li, E-mail: wl@ncu.edu.cn; Zheng, Changda

2014-11-14

The roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well (MQW) light-emitting diodes are investigated by numerical simulation. The simulation results show that V-shaped pits cannot only screen dislocations, but also play an important role on promoting hole injection into the MQWs. It is revealed that the injection of holes into the MQW via the sidewalls of the V-shaped pits is easier than via the flat region, due to the lower polarization charge densities in the sidewall structure with lower In concentration and (10–11)-oriented semi-polar facets.

Quantum key distribution network for multiple applications

NASA Astrophysics Data System (ADS)

Tajima, A.; Kondoh, T.; Ochi, T.; Fujiwara, M.; Yoshino, K.; Iizuka, H.; Sakamoto, T.; Tomita, A.; Shimamura, E.; Asami, S.; Sasaki, M.

2017-09-01

The fundamental architecture and functions of secure key management in a quantum key distribution (QKD) network with enhanced universal interfaces for smooth key sharing between arbitrary two nodes and enabling multiple secure communication applications are proposed. The proposed architecture consists of three layers: a quantum layer, key management layer and key supply layer. We explain the functions of each layer, the key formats in each layer and the key lifecycle for enabling a practical QKD network. A quantum key distribution-advanced encryption standard (QKD-AES) hybrid system and an encrypted smartphone system were developed as secure communication applications on our QKD network. The validity and usefulness of these systems were demonstrated on the Tokyo QKD Network testbed.

Multi-strategy based quantum cost reduction of linear nearest-neighbor quantum circuit

NASA Astrophysics Data System (ADS)

Tan, Ying-ying; Cheng, Xue-yun; Guan, Zhi-jin; Liu, Yang; Ma, Haiying

2018-03-01

With the development of reversible and quantum computing, study of reversible and quantum circuits has also developed rapidly. Due to physical constraints, most quantum circuits require quantum gates to interact on adjacent quantum bits. However, many existing quantum circuits nearest-neighbor have large quantum cost. Therefore, how to effectively reduce quantum cost is becoming a popular research topic. In this paper, we proposed multiple optimization strategies to reduce the quantum cost of the circuit, that is, we reduce quantum cost from MCT gates decomposition, nearest neighbor and circuit simplification, respectively. The experimental results show that the proposed strategies can effectively reduce the quantum cost, and the maximum optimization rate is 30.61% compared to the corresponding results.

Time Division Multiplexing of Semiconductor Qubits

NASA Astrophysics Data System (ADS)

Jarratt, Marie Claire; Hornibrook, John; Croot, Xanthe; Watson, John; Gardner, Geoff; Fallahi, Saeed; Manfra, Michael; Reilly, David

Readout chains, comprising resonators, amplifiers, and demodulators, are likely to be precious resources in quantum computing architectures. The potential to share readout resources is contingent on realising efficient means of time-division multiplexing (TDM) schemes that are compatible with quantum computing. Here, we demonstrate TDM using a GaAs quantum dot device with multiple charge sensors. Our device incorporates chip-level switches that do not load the impedance matching network. When used in conjunction with frequency multiplexing, each frequency tone addresses multiple time-multiplexed qubits, vastly increasing the capacity of a single readout line.

Multiple multicontrol unitary operations: Implementation and applications

NASA Astrophysics Data System (ADS)

Lin, Qing

2018-04-01

The efficient implementation of computational tasks is critical to quantum computations. In quantum circuits, multicontrol unitary operations are important components. Here, we present an extremely efficient and direct approach to multiple multicontrol unitary operations without decomposition to CNOT and single-photon gates. With the proposed approach, the necessary two-photon operations could be reduced from O( n 3) with the traditional decomposition approach to O( n), which will greatly relax the requirements and make large-scale quantum computation feasible. Moreover, we propose the potential application to the ( n- k)-uniform hypergraph state.

Detection of electromagnetic radiation using micromechanical multiple quantum wells structures

DOEpatents

Datskos, Panagiotis G [Knoxville, TN; Rajic, Slobodan [Knoxville, TN; Datskou, Irene [Knoxville, TN

2007-07-17

An apparatus and method for detecting electromagnetic radiation employs a deflectable micromechanical apparatus incorporating multiple quantum wells structures. When photons strike the quantum-well structure, physical stresses are created within the sensor, similar to a "bimetallic effect." The stresses cause the sensor to bend. The extent of deflection of the sensor can be measured through any of a variety of conventional means to provide a measurement of the photons striking the sensor. A large number of such sensors can be arranged in a two-dimensional array to provide imaging capability.

Optimum testing of multiple hypotheses in quantum detection theory

NASA Technical Reports Server (NTRS)

Yuen, H. P.; Kennedy, R. S.; Lax, M.

1975-01-01

The problem of specifying the optimum quantum detector in multiple hypotheses testing is considered for application to optical communications. The quantum digital detection problem is formulated as a linear programming problem on an infinite-dimensional space. A necessary and sufficient condition is derived by the application of a general duality theorem specifying the optimum detector in terms of a set of linear operator equations and inequalities. Existence of the optimum quantum detector is also established. The optimality of commuting detection operators is discussed in some examples. The structure and performance of the optimal receiver are derived for the quantum detection of narrow-band coherent orthogonal and simplex signals. It is shown that modal photon counting is asymptotically optimum in the limit of a large signaling alphabet and that the capacity goes to infinity in the absence of a bandwidth limitation.

Uncertainty relation for non-Hamiltonian quantum systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tarasov, Vasily E.

2013-01-15

General forms of uncertainty relations for quantum observables of non-Hamiltonian quantum systems are considered. Special cases of uncertainty relations are discussed. The uncertainty relations for non-Hamiltonian quantum systems are considered in the Schroedinger-Robertson form since it allows us to take into account Lie-Jordan algebra of quantum observables. In uncertainty relations, the time dependence of quantum observables and the properties of this dependence are discussed. We take into account that a time evolution of observables of a non-Hamiltonian quantum system is not an endomorphism with respect to Lie, Jordan, and associative multiplications.

A programmable quantum current standard from the Josephson and the quantum Hall effects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Poirier, W., E-mail: wilfrid.poirier@lne.fr; Lafont, F.; Djordjevic, S.

We propose a way to realize a programmable quantum current standard (PQCS) from the Josephson voltage standard and the quantum Hall resistance standard (QHR) exploiting the multiple connection technique provided by the quantum Hall effect (QHE) and the exactness of the cryogenic current comparator. The PQCS could lead to breakthroughs in electrical metrology like the realization of a programmable quantum current source, a quantum ampere-meter, and a simplified closure of the quantum metrological triangle. Moreover, very accurate universality tests of the QHE could be performed by comparing PQCS based on different QHRs.

Quantum Optimal Multiple Assignment Scheme for Realizing General Access Structure of Secret Sharing

NASA Astrophysics Data System (ADS)

Matsumoto, Ryutaroh

The multiple assignment scheme is to assign one or more shares to single participant so that any kind of access structure can be realized by classical secret sharing schemes. We propose its quantum version including ramp secret sharing schemes. Then we propose an integer optimization approach to minimize the average share size.

Use of external cavity quantum cascade laser compliance voltage in real-time trace gas sensing of multiple chemicals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Phillips, Mark C.; Taubman, Matthew S.; Kriesel, Jason M.

2015-02-08

We describe a prototype trace gas sensor designed for real-time detection of multiple chemicals. The sensor uses an external cavity quantum cascade laser (ECQCL) swept over its tuning range of 940-1075 cm-1 (9.30-10.7 µm) at a 10 Hz repetition rate.

Theoretical investigations of quantum correlations in NMR multiple-pulse spin-locking experiments

NASA Astrophysics Data System (ADS)

Gerasev, S. A.; Fedorova, A. V.; Fel'dman, E. B.; Kuznetsova, E. I.

2018-04-01

Quantum correlations are investigated theoretically in a two-spin system with the dipole-dipole interactions in the NMR multiple-pulse spin-locking experiments. We consider two schemes of the multiple-pulse spin-locking. The first scheme consists of π /2-pulses only and the delays between the pulses can differ. The second scheme contains φ-pulses (0<φ <π ) and has equal delays between them. We calculate entanglement for both schemes for an initial separable state. We show that entanglement is absent for the first scheme at equal delays between π /2-pulses at arbitrary temperatures. Entanglement emerges after several periods of the pulse sequence in the second scheme at φ =π /4 at milliKelvin temperatures. The necessary number of the periods increases with increasing temperature. We demonstrate the dependence of entanglement on the number of the periods of the multiple-pulse sequence. Quantum discord is obtained for the first scheme of the multiple-pulse spin-locking experiment at different temperatures.

Determination of dipole coupling constants using heteronuclear multiple quantum NMR

NASA Astrophysics Data System (ADS)

Weitekamp, D. P.; Garbow, J. R.; Pines, A.

1982-09-01

The problem of extracting dipole couplings from a system of N spins I = 1/2 and one spin S by NMR techniques is analyzed. The resolution attainable using a variety of single quantum methods is reviewed. The theory of heteronuclear multiple quantum (HMQ) NMR is developed, with particular emphasis being placed on the superior resolution available in HMQ spectra. Several novel pulse sequences are introduced, including a two-step method for the excitation of HMQ coherence. Experiments on partially oriented [1-13C] benzene demonstrate the excitation of the necessary HMQ coherence and illustrate the calculation of relative line intensities. Spectra of high order HMQ coherence under several different effective Hamiltonians achievable by multiple pulse sequences are discussed. A new effective Hamiltonian, scalar heteronuclear recoupled interactions by multiple pulse (SHRIMP), achieved by the simultaneous irradiation of both spin species with the same multiple pulse sequence, is introduced. Experiments are described which allow heteronuclear couplings to be correlated with an S-spin spreading parameter in spectra free of inhomogeneous broadening.

Ultraviolet Polariton Laser

DTIC Science & Technology

2015-09-17

Ultraviolet Polariton Laser Significant progress was achieved in the epitaxy of deep UV AlN/ AlGaN Bragg mirrors and microcavity structures paving...the way to the successful fabrication of vertical cavity emitting laser structures and polariton lasers. For the first time DBRs providing sufficient...high reflectivity for polariton emission were demonstrated. Thanks to a developed strain balanced Al0.85Ga0.15N template, the critical thickness

Quantum-enhanced metrology for multiple phase estimation with noise

PubMed Central

Yue, Jie-Dong; Zhang, Yu-Ran; Fan, Heng

2014-01-01

We present a general quantum metrology framework to study the simultaneous estimation of multiple phases in the presence of noise as a discretized model for phase imaging. This approach can lead to nontrivial bounds of the precision for multiphase estimation. Our results show that simultaneous estimation (SE) of multiple phases is always better than individual estimation (IE) of each phase even in noisy environment. The utility of the bounds of multiple phase estimation for photon loss channels is exemplified explicitly. When noise is low, those bounds possess the Heisenberg scale showing quantum-enhanced precision with the O(d) advantage for SE, where d is the number of phases. However, this O(d) advantage of SE scheme in the variance of the estimation may disappear asymptotically when photon loss becomes significant and then only a constant advantage over that of IE scheme demonstrates. Potential application of those results is presented. PMID:25090445

Mapping from multiple-control Toffoli circuits to linear nearest neighbor quantum circuits

NASA Astrophysics Data System (ADS)

Cheng, Xueyun; Guan, Zhijin; Ding, Weiping

2018-07-01

In recent years, quantum computing research has been attracting more and more attention, but few studies on the limited interaction distance between quantum bits (qubit) are deeply carried out. This paper presents a mapping method for transforming multiple-control Toffoli (MCT) circuits into linear nearest neighbor (LNN) quantum circuits instead of traditional decomposition-based methods. In order to reduce the number of inserted SWAP gates, a novel type of gate with the optimal LNN quantum realization was constructed, namely NNTS gate. The MCT gate with multiple control bits could be better cascaded by the NNTS gates, in which the arrangement of the input lines was LNN arrangement of the MCT gate. Then, the communication overhead measurement model on inserted SWAP gate count from the original arrangement to the new arrangement was put forward, and we selected one of the LNN arrangements with the minimum SWAP gate count. Moreover, the LNN arrangement-based mapping algorithm was given, and it dealt with the MCT gates in turn and mapped each MCT gate into its LNN form by inserting the minimum number of SWAP gates. Finally, some simplification rules were used, which can further reduce the final quantum cost of the LNN quantum circuit. Experiments on some benchmark MCT circuits indicate that the direct mapping algorithm results in fewer additional SWAP gates in about 50%, while the average improvement rate in quantum cost is 16.95% compared to the decomposition-based method. In addition, it has been verified that the proposed method has greater superiority for reversible circuits cascaded by MCT gates with more control bits.

Carrier multiplication and charge transport in artificial quantum-dot solids probed by ultrafast photocurrent spectroscopy (Conference Presentation)

NASA Astrophysics Data System (ADS)

Klimov, Victor I.

2017-05-01

Understanding and controlling carrier transport and recombination dynamics in colloidal quantum dot films is key to their application in electronic and optoelectronic devices. Towards this end, we have conducted transient photocurrent measurements to monitor transport through quantum confined band edge states in lead selenide quantum dots films as a function of pump fluence, temperature, electrical bias, and surface treatment. Room temperature dynamics reveal two distinct timescales of intra-dot geminate processes followed by non-geminate inter-dot processes. The non-geminate kinetics is well described by the recombination of holes with photoinjected and pre-existing electrons residing in mid-gap states. We find the mobility of the quantum-confined states shows no temperature dependence down to 6 K, indicating a tunneling mechanism of early time photoconductance. We present evidence of the importance of the exciton fine structure in controlling the low temperature photoconductance, whereby the nanoscale enhanced exchange interaction between electrons and holes in quantum dots introduces a barrier to charge separation. Finally, side-by-side comparison of photocurrent transients using excitation with low- and high-photon energies (1.5 vs. 3.0 eV) reveals clear signatures of carrier multiplication (CM), that is, generation of multiple excitons by single photons. Based on photocurrent measurements of quantum dot solids and optical measurements of solution based samples, we conclude that the CM efficiency is unaffected by strong inter-dot coupling. Therefore, the results of previous numerous spectroscopic CM studies conducted on dilute quantum dot suspensions should, in principle, be reproducible in electronically coupled QD films used in devices.

Computationally Efficient Nonlinear Bell Inequalities for Quantum Networks

NASA Astrophysics Data System (ADS)

Luo, Ming-Xing

2018-04-01

The correlations in quantum networks have attracted strong interest with new types of violations of the locality. The standard Bell inequalities cannot characterize the multipartite correlations that are generated by multiple sources. The main problem is that no computationally efficient method is available for constructing useful Bell inequalities for general quantum networks. In this work, we show a significant improvement by presenting new, explicit Bell-type inequalities for general networks including cyclic networks. These nonlinear inequalities are related to the matching problem of an equivalent unweighted bipartite graph that allows constructing a polynomial-time algorithm. For the quantum resources consisting of bipartite entangled pure states and generalized Greenberger-Horne-Zeilinger (GHZ) states, we prove the generic nonmultilocality of quantum networks with multiple independent observers using new Bell inequalities. The violations are maximal with respect to the presented Tsirelson's bound for Einstein-Podolsky-Rosen states and GHZ states. Moreover, these violations hold for Werner states or some general noisy states. Our results suggest that the presented Bell inequalities can be used to characterize experimental quantum networks.

Quantum teleportation of multiple degrees of freedom of a single photon

NASA Astrophysics Data System (ADS)

Wang, Xi-Lin; Cai, Xin-Dong; Su, Zu-En; Chen, Ming-Cheng; Wu, Dian; Li, Li; Liu, Nai-Le; Lu, Chao-Yang; Pan, Jian-Wei

2015-02-01

Quantum teleportation provides a `disembodied' way to transfer quantum states from one object to another at a distant location, assisted by previously shared entangled states and a classical communication channel. As well as being of fundamental interest, teleportation has been recognized as an important element in long-distance quantum communication, distributed quantum networks and measurement-based quantum computation. There have been numerous demonstrations of teleportation in different physical systems such as photons, atoms, ions, electrons and superconducting circuits. All the previous experiments were limited to the teleportation of one degree of freedom only. However, a single quantum particle can naturally possess various degrees of freedom--internal and external--and with coherent coupling among them. A fundamental open challenge is to teleport multiple degrees of freedom simultaneously, which is necessary to describe a quantum particle fully and, therefore, to teleport it intact. Here we demonstrate quantum teleportation of the composite quantum states of a single photon encoded in both spin and orbital angular momentum. We use photon pairs entangled in both degrees of freedom (that is, hyper-entangled) as the quantum channel for teleportation, and develop a method to project and discriminate hyper-entangled Bell states by exploiting probabilistic quantum non-demolition measurement, which can be extended to more degrees of freedom. We verify the teleportation for both spin-orbit product states and hybrid entangled states, and achieve a teleportation fidelity ranging from 0.57 to 0.68, above the classical limit. Our work is a step towards the teleportation of more complex quantum systems, and demonstrates an increase in our technical control of scalable quantum technologies.

Quantum teleportation of multiple degrees of freedom of a single photon.

PubMed

Wang, Xi-Lin; Cai, Xin-Dong; Su, Zu-En; Chen, Ming-Cheng; Wu, Dian; Li, Li; Liu, Nai-Le; Lu, Chao-Yang; Pan, Jian-Wei

2015-02-26

Quantum teleportation provides a 'disembodied' way to transfer quantum states from one object to another at a distant location, assisted by previously shared entangled states and a classical communication channel. As well as being of fundamental interest, teleportation has been recognized as an important element in long-distance quantum communication, distributed quantum networks and measurement-based quantum computation. There have been numerous demonstrations of teleportation in different physical systems such as photons, atoms, ions, electrons and superconducting circuits. All the previous experiments were limited to the teleportation of one degree of freedom only. However, a single quantum particle can naturally possess various degrees of freedom--internal and external--and with coherent coupling among them. A fundamental open challenge is to teleport multiple degrees of freedom simultaneously, which is necessary to describe a quantum particle fully and, therefore, to teleport it intact. Here we demonstrate quantum teleportation of the composite quantum states of a single photon encoded in both spin and orbital angular momentum. We use photon pairs entangled in both degrees of freedom (that is, hyper-entangled) as the quantum channel for teleportation, and develop a method to project and discriminate hyper-entangled Bell states by exploiting probabilistic quantum non-demolition measurement, which can be extended to more degrees of freedom. We verify the teleportation for both spin-orbit product states and hybrid entangled states, and achieve a teleportation fidelity ranging from 0.57 to 0.68, above the classical limit. Our work is a step towards the teleportation of more complex quantum systems, and demonstrates an increase in our technical control of scalable quantum technologies.

Sensitivity enhancements in MQ-MAS NMR of spin-5/2 nuclei using modulated rf mixing pulses

NASA Astrophysics Data System (ADS)

Vosegaard, Thomas; Massiot, Dominique; Grandinetti, Philip J.

2000-08-01

An X- overlineX pulse train with stepped modulation frequency was employed to enhance the multiple-quantum to single-quantum coherence transfer in the mixing period of the multiple-quantum magic-angle spinning (MQ-MAS) experiment for spin I=5/2 nuclei. Two MQ-MAS pulse sequences employing this mixing scheme for the triple-to-single and quintuple-to-single quantum coherence transfers have been designed and their performance is demonstrated for 27Al on samples of NaSi 3AlO 8 and 9Al 2O 3·2B 2O 3 . Compared to the standard single-pulse mixing sequences, the sensitivity is approximately doubled in the present experiments.

Effect of broad recombination zone in multiple quantum well structures on lifetime and efficiency of blue organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Lee, Seok Jae; Lee, Song Eun; Lee, Dong Hyung; Koo, Ja Ryong; Lee, Ho Won; Yoon, Seung Soo; Park, Jaehoon; Kim, Young Kwan

2014-10-01

Blue phosphorescent organic light-emitting diodes with multiple quantum well (MQW) structures (from one to four quantum wells) within an emitting layer (EML) are fabricated with charge control layers (CCLs) to control carrier movement. The distributed recombination zone and balanced charge carrier injection within EML are achieved through the MQW structure with CCLs. Remarkably, the half-decay lifetime of a blue device with three quantum wells, measured at an initial luminance of 500 cd/m2, is 3.5 times longer than that using a conventional structure. Additionally, the device’s efficiency improved. These results are explained with the effects of triplet exciton confinement and triplet-triplet annihilation within each EML.

Quantum caustics in resonance-fluorescence trajectories

NASA Astrophysics Data System (ADS)

Naghiloo, M.; Tan, D.; Harrington, P. M.; Lewalle, P.; Jordan, A. N.; Murch, K. W.

2017-11-01

We employ phase-sensitive amplification to perform homodyne detection of the resonance fluorescence from a driven superconducting artificial atom. Entanglement between the emitter and its fluorescence allows us to track the individual quantum state trajectories of the emitter conditioned on the outcomes of the field measurements. We analyze the ensemble properties of these trajectories by considering trajectories that connect specific initial and final states. By applying the stochastic path-integral formalism, we calculate equations of motion for the most-likely path between two quantum states and compare these predicted paths to experimental data. Drawing on the mathematical similarity between the action formalism of the most-likely quantum paths and ray optics, we study the emergence of caustics in quantum trajectories: places where multiple extrema in the stochastic action occur. We observe such multiple most-likely paths in experimental data and find these paths to be in reasonable quantitative agreement with theoretical calculations.

Conversion efficiency of an energy harvester based on resonant tunneling through quantum dots with heat leakage.

PubMed

Kano, Shinya; Fujii, Minoru

2017-03-03

We study the conversion efficiency of an energy harvester based on resonant tunneling through quantum dots with heat leakage. Heat leakage current from a hot electrode to a cold electrode is taken into account in the analysis of the harvester operation. Modeling of electrical output indicates that a maximum heat leakage current is not negligible because it is larger than that of the heat current harvested into electrical power. A reduction of heat leakage is required in this energy harvester in order to obtain efficient heat-to-electrical conversion. Multiple energy levels of a quantum dot can increase the output power of the harvester. Heavily doped colloidal semiconductor quantum dots are a possible candidate for a quantum-dot monolayer in the energy harvester to reduce heat leakage, scaling down device size, and increasing electrical output via multiple discrete energy levels.

Simultaneous detection of multiple DNA targets by integrating dual-color graphene quantum dot nanoprobes and carbon nanotubes.

PubMed

Qian, Zhaosheng; Shan, Xiaoyue; Chai, Lujing; Chen, Jianrong; Feng, Hui

2014-12-01

Simultaneous detection of multiple DNA targets was achieved based on a biocompatible graphene quantum dots (GQDs) and carbon nanotubes (CNTs) platform through spontaneous assembly between dual-color GQD-based probes and CNTs and subsequently self-recognition between DNA probes and targets. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Partially entangled states bridge in quantum teleportation

NASA Astrophysics Data System (ADS)

Cai, Xiao-Fei; Yu, Xu-Tao; Shi, Li-Hui; Zhang, Zai-Chen

2014-10-01

The traditional method for information transfer in a quantum communication system using partially entangled state resource is quantum distillation or direct teleportation. In order to reduce the waiting time cost in hop-by-hop transmission and execute independently in each node, we propose a quantum bridging method with partially entangled states to teleport quantum states from source node to destination node. We also prove that the designed specific quantum bridging circuit is feasible for partially entangled states teleportation across multiple intermediate nodes. Compared to two traditional ways, our partially entanglement quantum bridging method uses simpler logic gates, has better security, and can be used in less quantum resource situation.

Two new constructions of approximately SIC-POVMs from multiplicative characters

NASA Astrophysics Data System (ADS)

Luo, Gaojun; Cao, Xiwang

2017-12-01

In quantum information theory, symmetric informationally complete positive operator-valued measures (SIC-POVMs) are relevant to quantum state tomography [8], quantum cryptography [15], and foundational studies [16]. In general, it is hard to construct SIC-POVMs and only a few classes of them existed, as we know. Moreover, we do not know whether there exists an infinite class of them. Many researchers tried to construct approximately symmetric informationally complete positive operator-valued measures (ASIC-POVMs). In this paper, we propose two new constructions of ASIC-POVMs for prime power dimensions only by using multiplicative characters over finite fields.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baart, T. A.; Vandersypen, L. M. K.; Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft

We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the double quantum dots into the single-electron regime. The algorithm only requires (1) prior knowledge of the gate design and (2) the pinch-off value of the single gate T that is shared by all the quantum dots. This work significantly alleviates the user effort required to tune multiple quantum dot devices.

Students' Conceptual Difficulties in Quantum Mechanics: Potential Well Problems

ERIC Educational Resources Information Center

Ozcan, Ozgur; Didis, Nilufer; Tasar, Mehmet Fatih

2009-01-01

In this study, students' conceptual difficulties about some basic concepts in quantum mechanics like one-dimensional potential well problems and probability density of tunneling particles were identified. For this aim, a multiple choice instrument named Quantum Mechanics Conceptual Test has been developed by one of the researchers of this study…

Quantum communication beyond the localization length in disordered spin chains.

PubMed

Allcock, Jonathan; Linden, Noah

2009-03-20

We study the effects of localization on quantum state transfer in spin chains. We show how to use quantum error correction and multiple parallel spin chains to send a qubit with high fidelity over arbitrary distances, in particular, distances much greater than the localization length of the chain.

Electrically Tunable Terahertz Quantum-Cascade Lasers

NASA Technical Reports Server (NTRS)

Gunapala, Sarath; Soidel, Alexander; Mansour, Kamjou

2006-01-01

Improved quantum-cascade lasers (QCLs) are being developed as electrically tunable sources of radiation in the far infrared spectral region, especially in the frequency range of 2 to 5 THz. The structures of QCLs and the processes used to fabricate them have much in common with those of multiple- quantum-well infrared photodetectors.

Simultaneous nano-tracking of multiple motor proteins via spectral discrimination of quantum dots.

PubMed

Kakizuka, Taishi; Ikezaki, Keigo; Kaneshiro, Junichi; Fujita, Hideaki; Watanabe, Tomonobu M; Ichimura, Taro

2016-07-01

Simultaneous nanometric tracking of multiple motor proteins was achieved by combining multicolor fluorescent labeling of target proteins and imaging spectroscopy, revealing dynamic behaviors of multiple motor proteins at the sub-diffraction-limit scale. Using quantum dot probes of distinct colors, we experimentally verified the localization precision to be a few nanometers at temporal resolution of 30 ms or faster. One-dimensional processive movement of two heads of a single myosin molecule and multiple myosin molecules was successfully traced. Furthermore, the system was modified for two-dimensional measurement and applied to tracking of multiple myosin molecules. Our approach is useful for investigating cooperative movement of proteins in supramolecular nanomachinery.

Simultaneous nano-tracking of multiple motor proteins via spectral discrimination of quantum dots

PubMed Central

Kakizuka, Taishi; Ikezaki, Keigo; Kaneshiro, Junichi; Fujita, Hideaki; Watanabe, Tomonobu M.; Ichimura, Taro

2016-01-01

Simultaneous nanometric tracking of multiple motor proteins was achieved by combining multicolor fluorescent labeling of target proteins and imaging spectroscopy, revealing dynamic behaviors of multiple motor proteins at the sub-diffraction-limit scale. Using quantum dot probes of distinct colors, we experimentally verified the localization precision to be a few nanometers at temporal resolution of 30 ms or faster. One-dimensional processive movement of two heads of a single myosin molecule and multiple myosin molecules was successfully traced. Furthermore, the system was modified for two-dimensional measurement and applied to tracking of multiple myosin molecules. Our approach is useful for investigating cooperative movement of proteins in supramolecular nanomachinery. PMID:27446684

Sensitivity Analysis of Algan/GAN High Electron Mobility Transistors to Process Variation

DTIC Science & Technology

2008-02-01

delivery system gas panel including both hydride and alkyl delivery modules and the vent/valve configurations [14...Reactor Gas Delivery Systems A basic schematic diagram of an MOCVD reactor delivery gas panel is shown in Figure 13. The reactor gas delivery...system, or gas panel , consists of a network of stainless steel tubing, automatic valves and electronic mass flow controllers (MFC). There are separate

Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors

DTIC Science & Technology

2006-06-10

grown at 775 °C and sequentially deposited with AlN and AlGaN shells in hydrogen at 1040 °C. (21) Manfra, M. J.; Pfriffer, L. N.; West, K. W.; Stormer ...Lett. 2005, 86, 102106. (30) Henriksen, E. A.; Syed, S.; Ahmadian, Y.; Manfra, M. J.; Baldwin, K. W.; Sergent, A. M.; Molnar, R. J.; Stormer , H. L

Temperature and doping dependent changes in surface recombination during UV illumination of (Al)GaN bulk layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Netzel, Carsten; Jeschke, Jörg; Brunner, Frank

2016-09-07

We have studied the effect of continuous illumination with above band gap energy on the emission intensity of polar (Al)GaN bulk layers during the photoluminescence experiments. A temporal change in emission intensity on time scales from seconds to hours is based on the modification of the semiconductor surface states and the surface recombination by the incident light. The temporal behavior of the photoluminescence intensity varies with the parameters such as ambient atmosphere, pretreatment of the surface, doping density, threading dislocation density, excitation power density, and sample temperature. By means of temperature-dependent photoluminescence measurements, we observed that at least two differentmore » processes at the semiconductor surface affect the non-radiative surface recombination during illumination. The first process leads to an irreversible decrease in photoluminescence intensity and is dominant around room temperature, and the second process leads to a delayed increase in intensity and becomes dominant around T = 150–200 K. Both processes become slower when the sample temperature decreases from room temperature. They cease for T < 150 K. Stable photoluminescence intensity at arbitrary sample temperature was obtained by passivating the analyzed layer with an epitaxially grown AlN cap layer.« less

Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN

NASA Astrophysics Data System (ADS)

Reddy, Pramod; Washiyama, Shun; Kaess, Felix; Kirste, Ronny; Mita, Seiji; Collazo, Ramon; Sitar, Zlatko

2017-12-01

A theoretical framework that provides a quantitative relationship between point defect formation energies and growth process parameters is presented. It enables systematic point defect reduction by chemical potential control in metalorganic chemical vapor deposition (MOCVD) of III-nitrides. Experimental corroboration is provided by a case study of C incorporation in GaN. The theoretical model is shown to be successful in providing quantitative predictions of CN defect incorporation in GaN as a function of growth parameters and provides valuable insights into boundary phases and other impurity chemical reactions. The metal supersaturation is found to be the primary factor in determining the chemical potential of III/N and consequently incorporation or formation of point defects which involves exchange of III or N atoms with the reservoir. The framework is general and may be extended to other defect systems in (Al)GaN. The utility of equilibrium formalism typically employed in density functional theory in predicting defect incorporation in non-equilibrium and high temperature MOCVD growth is confirmed. Furthermore, the proposed theoretical framework may be used to determine optimal growth conditions to achieve minimum compensation within any given constraints such as growth rate, crystal quality, and other practical system limitations.

New GaN based HEMT with Si3N4 or un-doped region in the barrier for high power applications

NASA Astrophysics Data System (ADS)

Razavi, S. M.; Tahmasb Pour, S.; Najari, P.

2018-06-01

New AlGaN/GaN high electron mobility transistors (HEMTs) that their barrier layers under the gate are divided into two regions horizontally are presented in this work. Upper region is Si3N4 (SI-HEMT) or un-doped AlGaN (UN-HEMT) and lower region is AlGaN with heavier doping compared to barrier layer. Upper region in SI-HEMT and UN-HEMT reduces peak electric field in the channel and then improves breakdown voltage considerably. Lower region increases electron density in the two dimensional electron gas (2-DEG) and enhances drain current significantly. For instance, saturated drain current in SI-HEMT is about 100% larger than that in the conventional one. Moreover, the maximum breakdown voltage in the proposed structures is 65 V. This value is about 30% larger than that in the conventional transistor (50 V). Also, suggested structure reduces short channel effect such as DIBL. The maximum gm is obtained in UN-HEMT and conventional devices. Proposed structures improve breakdown voltage and saturated drain current and then enhance maximum output power density. Maximum output power density in the new structures is about 150% higher than that in the conventional.

Quantum cryptography and applications in the optical fiber network

NASA Astrophysics Data System (ADS)

Luo, Yuhui

2005-09-01

Quantum cryptography, as part of quantum information and communications, can provide absolute security for information transmission because it is established on the fundamental laws of quantum theory, such as the principle of uncertainty, No-cloning theorem and quantum entanglement. In this thesis research, a novel scheme to implement quantum key distribution based on multiphoton entanglement with a new protocol is proposed. Its advantages are: a larger information capacity can be obtained with a longer transmission distance and the detection of multiple photons is easier than that of a single photon. The security and attacks pertaining to such a system are also studied. Next, a quantum key distribution over wavelength division multiplexed (WDM) optical fiber networks is realized. Quantum key distribution in networks is a long-standing problem for practical applications. Here we combine quantum cryptography and WDM to solve this problem because WDM technology is universally deployed in the current and next generation fiber networks. The ultimate target is to deploy quantum key distribution over commercial networks. The problems arising from the networks are also studied in this part. Then quantum key distribution in multi-access networks using wavelength routing technology is investigated in this research. For the first time, quantum cryptography for multiple individually targeted users has been successfully implemented in sharp contrast to that using the indiscriminating broadcasting structure. It overcomes the shortcoming that every user in the network can acquire the quantum key signals intended to be exchanged between only two users. Furthermore, a more efficient scheme of quantum key distribution is adopted, hence resulting in a higher key rate. Lastly, a quantum random number generator based on quantum optics has been experimentally demonstrated. This device is a key component for quantum key distribution as it can create truly random numbers, which is an essential requirement to perform quantum key distribution. This new generator is composed of a single optical fiber coupler with fiber pigtails, which can be easily used in optical fiber communications.

Optoelectronic Performance Variations in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes: Effects of Potential Fluctuation.

PubMed

Islam, Abu Bashar Mohammad Hamidul; Shim, Jong-In; Shin, Dong-Soo

2018-05-07

We investigate the cause of the optoelectronic performance variations in InGaN/GaN multiple-quantum-well blue light-emitting diodes, using three different samples from an identical wafer grown on a c -plane sapphire substrate. Various macroscopic measurements have been conducted, revealing that with increasing strain in the quantum wells (QWs), the crystal quality improves with an increasing peak internal quantum efficiency while the droop becomes more severe. We propose to explain these variations using a model where the in-plane local potential fluctuation in QWs is considered. Our work is contrasted with prior works in that macroscopic measurements are utilized to find clues on the microscopic changes and their impacts on the device performances, which has been rarely attempted.

Code-division multiple-access multiuser demodulator by using quantum fluctuations.

PubMed

Otsubo, Yosuke; Inoue, Jun-Ichi; Nagata, Kenji; Okada, Masato

2014-07-01

We examine the average-case performance of a code-division multiple-access (CDMA) multiuser demodulator in which quantum fluctuations are utilized to demodulate the original message within the context of Bayesian inference. The quantum fluctuations are built into the system as a transverse field in the infinite-range Ising spin glass model. We evaluate the performance measurements by using statistical mechanics. We confirm that the CDMA multiuser modulator using quantum fluctuations achieve roughly the same performance as the conventional CDMA multiuser modulator through thermal fluctuations on average. We also find that the relationship between the quality of the original information retrieval and the amplitude of the transverse field is somehow a "universal feature" in typical probabilistic information processing, viz., in image restoration, error-correcting codes, and CDMA multiuser demodulation.

Code-division multiple-access multiuser demodulator by using quantum fluctuations

NASA Astrophysics Data System (ADS)

Otsubo, Yosuke; Inoue, Jun-ichi; Nagata, Kenji; Okada, Masato

2014-07-01

We examine the average-case performance of a code-division multiple-access (CDMA) multiuser demodulator in which quantum fluctuations are utilized to demodulate the original message within the context of Bayesian inference. The quantum fluctuations are built into the system as a transverse field in the infinite-range Ising spin glass model. We evaluate the performance measurements by using statistical mechanics. We confirm that the CDMA multiuser modulator using quantum fluctuations achieve roughly the same performance as the conventional CDMA multiuser modulator through thermal fluctuations on average. We also find that the relationship between the quality of the original information retrieval and the amplitude of the transverse field is somehow a "universal feature" in typical probabilistic information processing, viz., in image restoration, error-correcting codes, and CDMA multiuser demodulation.

Local Gate Control of a Carbon Nanotube Double Quantum Dot

DTIC Science & Technology

2016-04-04

Nanotube Double Quantum Dot N. Mason,*† M. J. Biercuk,* C. M. Marcus† We have measured carbon nanotube quantum dots with multiple electro- static gates and...computation. Carbon nanotubes have been considered lead- ing candidates for nanoscale electronic applica- tions (1, 2). Previous measurements of nano- tube...electronics have shown electron confine- ment (quantum dot) effects such as single- electron charging and energy-level quantization (3–5). Nanotube

Controllably releasing long-lived quantum memory for photonic polarization qubit into multiple spatially-separate photonic channels.

PubMed

Chen, Lirong; Xu, Zhongxiao; Zeng, Weiqing; Wen, Yafei; Li, Shujing; Wang, Hai

2016-09-26

We report an experiment in which long-lived quantum memories for photonic polarization qubits (PPQs) are controllably released into any one of multiple spatially-separate channels. The PPQs are implemented with an arbitrarily-polarized coherent signal light pulses at the single-photon level and are stored in cold atoms by means of electromagnetic-induced-transparency scheme. Reading laser pulses propagating along the direction at a small angle relative to quantum axis are applied to release the stored PPQs into an output channel. By changing the propagating directions of the read laser beam, we controllably release the retrieved PPQs into 7 different photonic output channels, respectively. At a storage time of δt = 5 μs, the least quantum-process fidelity in 7 different output channels is ~89%. At one of the output channels, the measured maximum quantum-process fidelity for the PPQs is 94.2% at storage time of δt = 0.85 ms. At storage time of 6 ms, the quantum-process fidelity is still beyond the bound of 78% to violate the Bell's inequality. The demonstrated controllable release of the stored PPQs may extend the capabilities of the quantum information storage technique.

Coherent optical pulse sequencer for quantum applications.

PubMed

Hosseini, Mahdi; Sparkes, Ben M; Hétet, Gabriel; Longdell, Jevon J; Lam, Ping Koy; Buchler, Ben C

2009-09-10

The bandwidth and versatility of optical devices have revolutionized information technology systems and communication networks. Precise and arbitrary control of an optical field that preserves optical coherence is an important requisite for many proposed photonic technologies. For quantum information applications, a device that allows storage and on-demand retrieval of arbitrary quantum states of light would form an ideal quantum optical memory. Recently, significant progress has been made in implementing atomic quantum memories using electromagnetically induced transparency, photon echo spectroscopy, off-resonance Raman spectroscopy and other atom-light interaction processes. Single-photon and bright-optical-field storage with quantum states have both been successfully demonstrated. Here we present a coherent optical memory based on photon echoes induced through controlled reversible inhomogeneous broadening. Our scheme allows storage of multiple pulses of light within a chosen frequency bandwidth, and stored pulses can be recalled in arbitrary order with any chosen delay between each recalled pulse. Furthermore, pulses can be time-compressed, time-stretched or split into multiple smaller pulses and recalled in several pieces at chosen times. Although our experimental results are so far limited to classical light pulses, our technique should enable the construction of an optical random-access memory for time-bin quantum information, and have potential applications in quantum information processing.

Progress on Ultra-Dense Quantum Communication Using Integrated Photonic Architecture

DTIC Science & Technology

2013-01-01

entanglement based quantum key distribution . . . . . . . . . . . . . . . . . . . . . . . . . 2 2.2 Extended dispersive-optics QKD (DO-QKD) protocol...2 2.3 Analysis of non-local correlations of entangled photon pairs for arbitrary dis- persion...Section 3). 2 Protocol Development 2.1 Achieving multiple secure bits per coincidence in time-energy entanglement based quantum key distribution High

The operator algebra approach to quantum groups

PubMed Central

Kustermans, Johan; Vaes, Stefaan

2000-01-01

A relatively simple definition of a locally compact quantum group in the C*-algebra setting will be explained as it was recently obtained by the authors. At the same time, we put this definition in the historical and mathematical context of locally compact groups, compact quantum groups, Kac algebras, multiplicative unitaries, and duality theory. PMID:10639116

Quantum game application to spectrum scarcity problems

NASA Astrophysics Data System (ADS)

Zabaleta, O. G.; Barrangú, J. P.; Arizmendi, C. M.

2017-01-01

Recent spectrum-sharing research has produced a strategy to address spectrum scarcity problems. This novel idea, named cognitive radio, considers that secondary users can opportunistically exploit spectrum holes left temporarily unused by primary users. This presents a competitive scenario among cognitive users, making it suitable for game theory treatment. In this work, we show that the spectrum-sharing benefits of cognitive radio can be increased by designing a medium access control based on quantum game theory. In this context, we propose a model to manage spectrum fairly and effectively, based on a multiple-users multiple-choice quantum minority game. By taking advantage of quantum entanglement and quantum interference, it is possible to reduce the probability of collision problems commonly associated with classic algorithms. Collision avoidance is an essential property for classic and quantum communications systems. In our model, two different scenarios are considered, to meet the requirements of different user strategies. The first considers sensor networks where the rational use of energy is a cornerstone; the second focuses on installations where the quality of service of the entire network is a priority.

Geometric descriptions of entangled states by auxiliary varieties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Holweck, Frederic; Luque, Jean-Gabriel; Thibon, Jean-Yves

2012-10-15

The aim of the paper is to propose geometric descriptions of multipartite entangled states using algebraic geometry. In the context of this paper, geometric means each stratum of the Hilbert space, corresponding to an entangled state, is an open subset of an algebraic variety built by classical geometric constructions (tangent lines, secant lines) from the set of separable states. In this setting, we describe well-known classifications of multipartite entanglement such as 2 Multiplication-Sign 2 Multiplication-Sign (n+ 1), for n Greater-Than-Or-Slanted-Equal-To 1, quantum systems and a new description with the 2 Multiplication-Sign 3 Multiplication-Sign 3 quantum system. Our results complete themore » approach of Miyake and make stronger connections with recent work of algebraic geometers. Moreover, for the quantum systems detailed in this paper, we propose an algorithm, based on the classical theory of invariants, to decide to which subvariety of the Hilbert space a given state belongs.« less

Upper bounds on the error probabilities and asymptotic error exponents in quantum multiple state discrimination

DOE Office of Scientific and Technical Information (OSTI.GOV)

Audenaert, Koenraad M. R., E-mail: koenraad.audenaert@rhul.ac.uk; Department of Physics and Astronomy, University of Ghent, S9, Krijgslaan 281, B-9000 Ghent; Mosonyi, Milán, E-mail: milan.mosonyi@gmail.com

2014-10-01

We consider the multiple hypothesis testing problem for symmetric quantum state discrimination between r given states σ₁, …, σ{sub r}. By splitting up the overall test into multiple binary tests in various ways we obtain a number of upper bounds on the optimal error probability in terms of the binary error probabilities. These upper bounds allow us to deduce various bounds on the asymptotic error rate, for which it has been hypothesized that it is given by the multi-hypothesis quantum Chernoff bound (or Chernoff divergence) C(σ₁, …, σ{sub r}), as recently introduced by Nussbaum and Szkoła in analogy with Salikhov'smore » classical multi-hypothesis Chernoff bound. This quantity is defined as the minimum of the pairwise binary Chernoff divergences min{sub j« less

Microwave spectroscopic observation of multiple phase transitions in the bilayer electron solid in wide quantum wells

NASA Astrophysics Data System (ADS)

Hatke, Anthony; Engel, Lloyd; Liu, Yang; Shayegan, Mansour; Pfeiffer, Loren; West, Ken; Baldwin, Kirk

2015-03-01

The termination of the low Landau filling factor (ν) fractional quantum Hall series for a single layer two dimensional system results in the formation of a pinned Wigner solid for ν < 1 / 5. In a wide quantum well the system can support a bilayer state in which interlayer and intralayer interactions become comparable, which is measured in traditional transport as an insulating state for ν < 1 / 2. We perform microwave spectroscopic studies of this bilayer state and observe that this insulator exhibits a resonance, a signature of a solid phase. Additionally, we find that as we increase the density of the well at fixed ν this bilayer solid exhibits multiple sharp reductions in the resonance amplitude vs ν. This behavior is characteristic of multiple phase transitions, which remain hidden from dc transport measurements.

A noise immunity controlled quantum teleportation protocol

NASA Astrophysics Data System (ADS)

Li, Dong-fen; Wang, Rui-jin; Zhang, Feng-li; Baagyere, Edward; Qin, Zhen; Xiong, Hu; Zhan, Huayi

2016-11-01

With the advent of the Internet and information and communication technology, quantum teleportation has become an important field in information security and its application areas. This is because quantum teleportation has the ability to attain a timely secret information delivery and offers unconditional security. And as such, the field of quantum teleportation has become a hot research topic in recent years. However, noise has serious effect on the safety of quantum teleportation within the aspects of information fidelity, channel capacity and information transfer. Therefore, the main purpose of this paper is to address these problems of quantum teleportation. Firstly, in order to resist collective noise, we construct a decoherence-free subspace under different noise scenarios to establish a two-dimensional fidelity quantum teleportation models. And also create quantum teleportation of multiple degree of freedom, and these models ensure the accuracy and availability of the exchange of information and in multiple degree of freedom. Secondly, for easy preparation, measurement and implementation, we use super dense coding features to build an entangled quantum secret exchange channel. To improve the channel utilization and capacity, an efficient super dense coding method based on ultra-entanglement exchange is used. Thirdly, continuous variables of the controlled quantum key distribution were designed for quantum teleportation; in addition, we perform Bell-basis measurement under the collective noise and also prepare the storage technology of quantum states to achieve one-bit key by three-photon encoding to improve its security and efficiency. We use these two methods because they conceal information, resist a third party attack and can detect eavesdropping. Our proposed methods, according to the security analysis, are able to solve the problems associated with the quantum teleportation under various noise environments.

Quantum partial search for uneven distribution of multiple target items

NASA Astrophysics Data System (ADS)

Zhang, Kun; Korepin, Vladimir

2018-06-01

Quantum partial search algorithm is an approximate search. It aims to find a target block (which has the target items). It runs a little faster than full Grover search. In this paper, we consider quantum partial search algorithm for multiple target items unevenly distributed in a database (target blocks have different number of target items). The algorithm we describe can locate one of the target blocks. Efficiency of the algorithm is measured by number of queries to the oracle. We optimize the algorithm in order to improve efficiency. By perturbation method, we find that the algorithm runs the fastest when target items are evenly distributed in database.

Quantum Darwinism

NASA Astrophysics Data System (ADS)

Zurek, Wojciech Hubert

2009-03-01

Quantum Darwinism describes the proliferation, in the environment, of multiple records of selected states of a quantum system. It explains how the quantum fragility of a state of a single quantum system can lead to the classical robustness of states in their correlated multitude; shows how effective `wave-packet collapse' arises as a result of the proliferation throughout the environment of imprints of the state of the system; and provides a framework for the derivation of Born's rule, which relates the probabilities of detecting states to their amplitudes. Taken together, these three advances mark considerable progress towards settling the quantum measurement problem.

Decoherence-Free Interaction between Giant Atoms in Waveguide Quantum Electrodynamics

NASA Astrophysics Data System (ADS)

Kockum, Anton Frisk; Johansson, Göran; Nori, Franco

2018-04-01

In quantum-optics experiments with both natural and artificial atoms, the atoms are usually small enough that they can be approximated as pointlike compared to the wavelength of the electromagnetic radiation with which they interact. However, superconducting qubits coupled to a meandering transmission line, or to surface acoustic waves, can realize "giant artificial atoms" that couple to a bosonic field at several points which are wavelengths apart. Here, we study setups with multiple giant atoms coupled at multiple points to a one-dimensional (1D) waveguide. We show that the giant atoms can be protected from decohering through the waveguide, but still have exchange interactions mediated by the waveguide. Unlike in decoherence-free subspaces, here the entire multiatom Hilbert space (2N states for N atoms) is protected from decoherence. This is not possible with "small" atoms. We further show how this decoherence-free interaction can be designed in setups with multiple atoms to implement, e.g., a 1D chain of atoms with nearest-neighbor couplings or a collection of atoms with all-to-all connectivity. This may have important applications in quantum simulation and quantum computing.

Decoherence-Free Interaction between Giant Atoms in Waveguide Quantum Electrodynamics.

PubMed

Kockum, Anton Frisk; Johansson, Göran; Nori, Franco

2018-04-06

In quantum-optics experiments with both natural and artificial atoms, the atoms are usually small enough that they can be approximated as pointlike compared to the wavelength of the electromagnetic radiation with which they interact. However, superconducting qubits coupled to a meandering transmission line, or to surface acoustic waves, can realize "giant artificial atoms" that couple to a bosonic field at several points which are wavelengths apart. Here, we study setups with multiple giant atoms coupled at multiple points to a one-dimensional (1D) waveguide. We show that the giant atoms can be protected from decohering through the waveguide, but still have exchange interactions mediated by the waveguide. Unlike in decoherence-free subspaces, here the entire multiatom Hilbert space (2^{N} states for N atoms) is protected from decoherence. This is not possible with "small" atoms. We further show how this decoherence-free interaction can be designed in setups with multiple atoms to implement, e.g., a 1D chain of atoms with nearest-neighbor couplings or a collection of atoms with all-to-all connectivity. This may have important applications in quantum simulation and quantum computing.

Triazatruxene: A Rigid Central Donor Unit for a D-A3 Thermally Activated Delayed Fluorescence Material Exhibiting Sub-Microsecond Reverse Intersystem Crossing and Unity Quantum Yield via Multiple Singlet-Triplet State Pairs.

PubMed

Dos Santos, Paloma L; Ward, Jonathan S; Congrave, Daniel G; Batsanov, Andrei S; Eng, Julien; Stacey, Jessica E; Penfold, Thomas J; Monkman, Andrew P; Bryce, Martin R

2018-06-01

By inverting the common structural motif of thermally activated delayed fluorescence materials to a rigid donor core and multiple peripheral acceptors, reverse intersystem crossing (rISC) rates are demonstrated in an organic material that enables utilization of triplet excited states at faster rates than Ir-based phosphorescent materials. A combination of the inverted structure and multiple donor-acceptor interactions yields up to 30 vibronically coupled singlet and triplet states within 0.2 eV that are involved in rISC. This gives a significant enhancement to the rISC rate, leading to delayed fluorescence decay times as low as 103.9 ns. This new material also has an emission quantum yield ≈1 and a very small singlet-triplet gap. This work shows that it is possible to achieve both high photoluminescence quantum yield and fast rISC in the same molecule. Green organic light-emitting diode devices with external quantum efficiency >30% are demonstrated at 76 cd m -2 .

Polarizabilities of Impurity Doped Quantum Dots Under Pulsed Field: Role of Multiplicative White Noise

NASA Astrophysics Data System (ADS)

Saha, Surajit; Ghosh, Manas

2016-02-01

We perform a rigorous analysis of the profiles of a few diagonal and off-diagonal components of linear ( α xx , α yy , α xy , and α yx ), first nonlinear ( β xxx , β yyy , β xyy , and β yxx ), and second nonlinear ( γ xxxx , γ yyyy , γ xxyy , and γ yyxx ) polarizabilities of quantum dots exposed to an external pulsed field. Simultaneous presence of multiplicative white noise has also been taken into account. The quantum dot contains a dopant represented by a Gaussian potential. The number of pulse and the dopant location have been found to fabricate the said profiles through their interplay. Moreover, a variation in the noise strength also contributes evidently in designing the profiles of above polarizability components. In general, the off-diagonal components have been found to be somewhat more responsive to a variation of noise strength. However, we have found some exception to the above fact for the off-diagonal β yxx component. The study projects some pathways of achieving stable, enhanced, and often maximized output of linear and nonlinear polarizabilities of doped quantum dots driven by multiplicative noise.

A multi-pathway model for photosynthetic reaction center

NASA Astrophysics Data System (ADS)

Qin, M.; Shen, H. Z.; Yi, X. X.

2016-03-01

Charge separation occurs in a pair of tightly coupled chlorophylls at the heart of photosynthetic reaction centers of both plants and bacteria. Recently it has been shown that quantum coherence can, in principle, enhance the efficiency of a solar cell, working like a quantum heat engine. Here, we propose a biological quantum heat engine (BQHE) motivated by Photosystem II reaction center (PSII RC) to describe the charge separation. Our model mainly considers two charge-separation pathways which is more than that typically considered in the published literature. We explore how these cross-couplings increase the current and power of the charge separation and discuss the effects of multiple pathways in terms of current and power. The robustness of the BQHE against the charge recombination in natural PSII RC and dephasing induced by environments is also explored, and extension from two pathways to multiple pathways is made. These results suggest that noise-induced quantum coherence helps to suppress the influence of acceptor-to-donor charge recombination, and besides, nature-mimicking architectures with engineered multiple pathways for charge separations might be better for artificial solar energy devices considering the influence of environments.

Luminescence Studies of Ion-Implanted Gallium Nitride and Aluminum Gallium Nitride

DTIC Science & Technology

2003-03-01

58: 1306 (1995). 15. Moxom, Jeremy. “Characterization of Mg doped GaN by positron annihilation spectroscopy .” Journal of Applied Physics, 92... semiconductors such as GaN and AlxGa1-xN became very popular for their applications on various devices. Therefore comprehensive and systematic luminescence...short wavelength optoelectronic applications that are beyond the range of present semiconductor devices. The AlGaN and GaN materials have these

Steering of quantum waves: Demonstration of Y-junction transistors using InAs quantum wires

NASA Astrophysics Data System (ADS)

Jones, Gregory M.; Qin, Jie; Yang, Chia-Hung; Yang, Ming-Jey

2005-06-01

In this paper we demonstrate using an InAs quantum wire Y-branch switch that the electron wave can be switched to exit from the two drains by a lateral gate bias. The gating modifies the electron wave functions as well as their interference pattern, causing the anti-correlated, oscillatory transconductances. Our result suggests a new transistor function in a multiple-lead ballistic quantum wire system.

M-plane core-shell InGaN/GaN multiple-quantum-wells on GaN wires for electroluminescent devices.

PubMed

Koester, Robert; Hwang, Jun-Seok; Salomon, Damien; Chen, Xiaojun; Bougerol, Catherine; Barnes, Jean-Paul; Dang, Daniel Le Si; Rigutti, Lorenzo; de Luna Bugallo, Andres; Jacopin, Gwénolé; Tchernycheva, Maria; Durand, Christophe; Eymery, Joël

2011-11-09

Nonpolar InGaN/GaN multiple quantum wells (MQWs) grown on the {11-00} sidewalls of c-axis GaN wires have been grown by organometallic vapor phase epitaxy on c-sapphire substrates. The structural properties of single wires are studied in detail by scanning transmission electron microscopy and in a more original way by secondary ion mass spectroscopy to quantify defects, thickness (1-8 nm) and In-composition in the wells (∼16%). The core-shell MQW light emission characteristics (390-420 nm at 5 K) were investigated by cathodo- and photoluminescence demonstrating the absence of the quantum Stark effect as expected due to the nonpolar orientation. Finally, these radial nonpolar quantum wells were used in room-temperature single-wire electroluminescent devices emitting at 392 nm by exploiting sidewall emission.

Quantum-Well Thermophotovoltaic Cells

NASA Technical Reports Server (NTRS)

Freudlich, Alex; Ignatiev, Alex

2009-01-01

Thermophotovoltaic cells containing multiple quantum wells have been invented as improved means of conversion of thermal to electrical energy. The semiconductor bandgaps of the quantum wells can be tailored to be narrower than those of prior thermophotovoltaic cells, thereby enabling the cells to convert energy from longer-wavelength photons that dominate the infrared-rich spectra of typical thermal sources with which these cells would be used. Moreover, in comparison with a conventional single-junction thermophotovoltaic cell, a cell containing multiple narrow-bandgap quantum wells according to the invention can convert energy from a wider range of wavelengths. Hence, the invention increases the achievable thermal-to-electrical energy-conversion efficiency. These thermophotovoltaic cells are expected to be especially useful for extracting electrical energy from combustion, waste-heat, and nuclear sources having temperatures in the approximate range from 1,000 to 1,500 C.

2.8 {mu}m emission from type-I quantum wells grown on InAs{sub x}P{sub 1-x}/InP metamorphic graded buffers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jung, Daehwan; Song, Yuncheng; Larry Lee, Minjoo

We report 2.8 {mu}m emission from compressively strained type-I quantum wells (QWs) grown on InP-based metamorphic InAs{sub x}P{sub 1-x} step-graded buffers. High quality metamorphic graded buffers showed smooth surface morphology and low threading dislocation densities of approximately 2.5 Multiplication-Sign 10{sup 6} cm{sup -2}. High-resolution x-ray diffraction scans showed strong satellites from multiple quantum wells grown on metamorphic buffers, and cross-sectional transmission electron microscopy revealed smooth and coherent quantum well interfaces. Room-temperature photoluminescence emission at 2.8 {mu}m with a narrow linewidth ({approx}50 meV) shows the promise of metamorphic growth for mid-infrared laser diodes on InP.

Thick-shell nanocrystal quantum dots

DOEpatents

Hollingsworth, Jennifer A [Los Alamos, NM; Chen, Yongfen [Eugene, OR; Klimov, Victor I [Los Alamos, NM; Htoon, Han [Los Alamos, NM; Vela, Javier [Los Alamos, NM

2011-05-03

Colloidal nanocrystal quantum dots comprising an inner core having an average diameter of at least 1.5 nm and an outer shell, where said outer shell comprises multiple monolayers, wherein at least 30% of the quantum dots have an on-time fraction of 0.80 or greater under continuous excitation conditions for a period of time of at least 10 minutes.

Quantum light in coupled interferometers for quantum gravity tests.

PubMed

Ruo Berchera, I; Degiovanni, I P; Olivares, S; Genovese, M

2013-05-24

In recent years quantum correlations have received a lot of attention as a key ingredient in advanced quantum metrology protocols. In this Letter we show that they provide even larger advantages when considering multiple-interferometer setups. In particular, we demonstrate that the use of quantum correlated light beams in coupled interferometers leads to substantial advantages with respect to classical light, up to a noise-free scenario for the ideal lossless case. On the one hand, our results prompt the possibility of testing quantum gravity in experimental configurations affordable in current quantum optics laboratories and strongly improve the precision in "larger size experiments" such as the Fermilab holometer; on the other hand, they pave the way for future applications to high precision measurements and quantum metrology.

Triple-Quantum Filtered NMR Imaging of Sodium -23 in the Human Brain

NASA Astrophysics Data System (ADS)

Keltner, John Robinson

In the past multiple-quantum filtered imaging of biexponential relaxation sodium-23 nuclei in the human brain has been limited by low signal to noise ratios; this thesis demonstrates that such imaging is feasible when using a modified gradient-selected triple-quantum filter at a repetition time which maximizes the signal to noise ratio. Nuclear magnetic resonance imaging of biexponential relaxation sodium-23 (^{23}Na) nuclei in the human brain may be useful for detecting ischemia, cancer, and pathophysiology related to manic-depression. Multiple -quantum filters may be used to selectively image biexponential relaxation ^{23}Na signals since these filters suppress single-exponential relaxation ^{23}Na signals. In this thesis, the typical repetition times (200 -300 ms) used for in vivo multiple-quantum filtered ^{23}Na experiments are shown to be approximately 5 times greater than the optimal repetition time which maximizes multiple-quantum filtered SNR. Calculations and experimental verification show that the gradient-selected triple-quantum (GS3Q) filtered SNR for ^ {23}Na in a 4% agarose gel increases by a factor of two as the repetition time decreases from 300 ms to 55 ms. It is observed that a simple reduction of repetition time also increases spurious single-quantum signals from GS3Q filtered experiments. Irreducible superoperator calculations have been used to design a modified GS3Q filter which more effectively suppresses the spurious single-quantum signals. The modified GS3Q filter includes a preparatory crusher gradient and two-step-phase cycling. Using the modified GS3Q filter and a repetition time of 70 ms, a three dimensional triple-quantum filtered image of a phantom modelling ^{23} Na in the brain was obtained. The phantom consisted of two 4 cm diameter spheres inside of a 8.5 cm x 7 cm ellipsoid. The two spheres contained 0.012 and 0.024 M ^{23}Na in 4% agarose gel. Surrounding the spheres and inside the ellipsoid was 0.03 M aqueous ^{23}Na. The image dimensions were 16 x 16 x 16 voxels with the dimension of a voxel being 1.5 x 1.5 x 1.5 cm^3. The signal to noise ratio for the GS3Q filtered ^ {23}Na signal from the 0.012 and 0.024 M ^{23}Na spheres was 17 and 30 for a 54 minute experiment at 2.35 T. (Abstract shortened by UMI.).

High-fidelity gates towards a scalable superconducting quantum processor

NASA Astrophysics Data System (ADS)

Chow, Jerry M.; Corcoles, Antonio D.; Gambetta, Jay M.; Rigetti, Chad; Johnson, Blake R.; Smolin, John A.; Merkel, Seth; Poletto, Stefano; Rozen, Jim; Rothwell, Mary Beth; Keefe, George A.; Ketchen, Mark B.; Steffen, Matthias

2012-02-01

We experimentally explore the implementation of high-fidelity gates on multiple superconducting qubits coupled to multiple resonators. Having demonstrated all-microwave single and two qubit gates with fidelities > 90% on multi-qubit single-resonator systems, we expand the application to qubits across two resonators and investigate qubit coupling in this circuit. The coupled qubit-resonators are building blocks towards two-dimensional lattice networks for the application of surface code quantum error correction algorithms.

In vivo single-shot three-dimensionally localized multiple quantum spectroscopy of GABA in the human brain with improved spectral selectivity

NASA Astrophysics Data System (ADS)

Choi, In-Young; Lee, Sang-Pil; Shen, Jun

2005-01-01

A single-shot multiple quantum filtering method is developed that uses two double-band frequency selective pulses for enhanced spectral selectivity in combination with a slice-selective 90°, a slice-selective universal rotator 90°, and a spectral-spatial pulse composed of two slice-selective universal rotator 45° pulses for single-shot three-dimensional localization. The use of this selective multiple quantum filtering method for C3 and C4 methylene protons of GABA resulted in improved spectral selectivity for GABA and effective suppression of overlapping signals such as creatine and glutathione in each single scan, providing reliable measurements of the GABA doublet in all subjects. The concentration of GABA was measured to be 0.7 ± 0.2 μmol/g (means ± SD, n = 15) in the fronto-parietal region of the human brain in vivo.

Direct evaluation of boson dynamics via finite-temperature time-dependent variation with multiple Davydov states.

PubMed

Fujihashi, Yuta; Wang, Lu; Zhao, Yang

2017-12-21

Recent advances in quantum optics allow for exploration of boson dynamics in dissipative many-body systems. However, the traditional descriptions of quantum dissipation using reduced density matrices are unable to capture explicit information of bath dynamics. In this work, efficient evaluation of boson dynamics is demonstrated by combining the multiple Davydov Ansatz with finite-temperature time-dependent variation, going beyond what state-of-the-art density matrix approaches are capable to offer for coupled electron-boson systems. To this end, applications are made to excitation energy transfer in photosynthetic systems, singlet fission in organic thin films, and circuit quantum electrodynamics in superconducting devices. Thanks to the multiple Davydov Ansatz, our analysis of boson dynamics leads to clear revelation of boson modes strongly coupled to electronic states, as well as in-depth description of polaron creation and destruction in the presence of thermal fluctuations.

Theoretical study of polarization insensitivity of carrier-induced refractive index change of multiple quantum well.

PubMed

Miao, Qingyuan; Zhou, Qunjie; Cui, Jun; He, Ping-An; Huang, Dexiu

2014-12-29

Characteristics of polarization insensitivity of carrier-induced refractive index change of 1.55 μm tensile-strained multiple quantum well (MQW) are theoretically investigated. A comprehensive MQW model is proposed to effectively extend the application range of previous models. The model considers the temperature variation as well as the nonuniform distribution of injected carrier in MQW. Tensile-strained MQW is expected to achieve polarization insensitivity of carrier-induced refractive index change over a wide wavelength range as temperature varies from 0°C to 40°C, while the magnitude of refractive index change keeps a large value (more than 3 × 10^-3). And that the polarization insensitivity of refractive index change can maintain for a wide range of carrier concentration. Multiple quantum well with different material and structure parameters is anticipated to have the similar polarization insensitivity of refractive index change, which shows the design flexibility.

Memory-assisted quantum key distribution resilient against multiple-excitation effects

NASA Astrophysics Data System (ADS)

Lo Piparo, Nicolò; Sinclair, Neil; Razavi, Mohsen

2018-01-01

Memory-assisted measurement-device-independent quantum key distribution (MA-MDI-QKD) has recently been proposed as a technique to improve the rate-versus-distance behavior of QKD systems by using existing, or nearly-achievable, quantum technologies. The promise is that MA-MDI-QKD would require less demanding quantum memories than the ones needed for probabilistic quantum repeaters. Nevertheless, early investigations suggest that, in order to beat the conventional memory-less QKD schemes, the quantum memories used in the MA-MDI-QKD protocols must have high bandwidth-storage products and short interaction times. Among different types of quantum memories, ensemble-based memories offer some of the required specifications, but they typically suffer from multiple excitation effects. To avoid the latter issue, in this paper, we propose two new variants of MA-MDI-QKD both relying on single-photon sources for entangling purposes. One is based on known techniques for entanglement distribution in quantum repeaters. This scheme turns out to offer no advantage even if one uses ideal single-photon sources. By finding the root cause of the problem, we then propose another setup, which can outperform single memory-less setups even if we allow for some imperfections in our single-photon sources. For such a scheme, we compare the key rate for different types of ensemble-based memories and show that certain classes of atomic ensembles can improve the rate-versus-distance behavior.

Controllably releasing long-lived quantum memory for photonic polarization qubit into multiple spatially-separate photonic channels

PubMed Central

Chen, Lirong; Xu, Zhongxiao; Zeng, Weiqing; Wen, Yafei; Li, Shujing; Wang, Hai

2016-01-01

We report an experiment in which long-lived quantum memories for photonic polarization qubits (PPQs) are controllably released into any one of multiple spatially-separate channels. The PPQs are implemented with an arbitrarily-polarized coherent signal light pulses at the single-photon level and are stored in cold atoms by means of electromagnetic-induced-transparency scheme. Reading laser pulses propagating along the direction at a small angle relative to quantum axis are applied to release the stored PPQs into an output channel. By changing the propagating directions of the read laser beam, we controllably release the retrieved PPQs into 7 different photonic output channels, respectively. At a storage time of δt = 5 μs, the least quantum-process fidelity in 7 different output channels is ~89%. At one of the output channels, the measured maximum quantum-process fidelity for the PPQs is 94.2% at storage time of δt = 0.85 ms. At storage time of 6 ms, the quantum-process fidelity is still beyond the bound of 78% to violate the Bell’s inequality. The demonstrated controllable release of the stored PPQs may extend the capabilities of the quantum information storage technique. PMID:27667262

Modeling techniques for quantum cascade lasers

NASA Astrophysics Data System (ADS)

Jirauschek, Christian; Kubis, Tillmann

2014-03-01

Quantum cascade lasers are unipolar semiconductor lasers covering a wide range of the infrared and terahertz spectrum. Lasing action is achieved by using optical intersubband transitions between quantized states in specifically designed multiple-quantum-well heterostructures. A systematic improvement of quantum cascade lasers with respect to operating temperature, efficiency, and spectral range requires detailed modeling of the underlying physical processes in these structures. Moreover, the quantum cascade laser constitutes a versatile model device for the development and improvement of simulation techniques in nano- and optoelectronics. This review provides a comprehensive survey and discussion of the modeling techniques used for the simulation of quantum cascade lasers. The main focus is on the modeling of carrier transport in the nanostructured gain medium, while the simulation of the optical cavity is covered at a more basic level. Specifically, the transfer matrix and finite difference methods for solving the one-dimensional Schrödinger equation and Schrödinger-Poisson system are discussed, providing the quantized states in the multiple-quantum-well active region. The modeling of the optical cavity is covered with a focus on basic waveguide resonator structures. Furthermore, various carrier transport simulation methods are discussed, ranging from basic empirical approaches to advanced self-consistent techniques. The methods include empirical rate equation and related Maxwell-Bloch equation approaches, self-consistent rate equation and ensemble Monte Carlo methods, as well as quantum transport approaches, in particular the density matrix and non-equilibrium Green's function formalism. The derived scattering rates and self-energies are generally valid for n-type devices based on one-dimensional quantum confinement, such as quantum well structures.

Modeling techniques for quantum cascade lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jirauschek, Christian; Kubis, Tillmann

2014-03-15

Quantum cascade lasers are unipolar semiconductor lasers covering a wide range of the infrared and terahertz spectrum. Lasing action is achieved by using optical intersubband transitions between quantized states in specifically designed multiple-quantum-well heterostructures. A systematic improvement of quantum cascade lasers with respect to operating temperature, efficiency, and spectral range requires detailed modeling of the underlying physical processes in these structures. Moreover, the quantum cascade laser constitutes a versatile model device for the development and improvement of simulation techniques in nano- and optoelectronics. This review provides a comprehensive survey and discussion of the modeling techniques used for the simulation ofmore » quantum cascade lasers. The main focus is on the modeling of carrier transport in the nanostructured gain medium, while the simulation of the optical cavity is covered at a more basic level. Specifically, the transfer matrix and finite difference methods for solving the one-dimensional Schrödinger equation and Schrödinger-Poisson system are discussed, providing the quantized states in the multiple-quantum-well active region. The modeling of the optical cavity is covered with a focus on basic waveguide resonator structures. Furthermore, various carrier transport simulation methods are discussed, ranging from basic empirical approaches to advanced self-consistent techniques. The methods include empirical rate equation and related Maxwell-Bloch equation approaches, self-consistent rate equation and ensemble Monte Carlo methods, as well as quantum transport approaches, in particular the density matrix and non-equilibrium Green's function formalism. The derived scattering rates and self-energies are generally valid for n-type devices based on one-dimensional quantum confinement, such as quantum well structures.« less

Optically controlled reflection modulator using GaAs-AlGaAs n-i-p-i/multiple-quantum-well structures

NASA Technical Reports Server (NTRS)

Law, K.-K.; Simes, R. J.; Coldren, L. A.; Gossard, A. C.; Maserjian, J.

1989-01-01

An optically controlled reflection modulator has been demonstrated that consists of a combination of a GaAs-AlGaAs n-i-p-i doping structure with a multiple-quantum-well structures on top of a distributed Bragg reflector, all grown by MBE. A modulation of approximately 60 percent is obtained on the test structure, corresponding to a differential change of absorption coefficient in the quantum wells of approximately 7500/cm. Changes in reflectance can be observed with a control beam power as low as 1.5 microW. This device structure has the potential of being developed as an optically addressed spatial light modulator for optical information processing.

Effect of hexagonal hillock on luminescence characteristic of multiple quantum wells structure

NASA Astrophysics Data System (ADS)

Du, Jinjuan; Xu, Shengrui; Li, Peixian; Zhang, Jincheng; Zhao, Ying; Peng, Ruoshi; Fan, Xiaomeng; Hao, Yue

2018-04-01

GaN based ultraviolet multiple quantum well structures grown on a c-plane sapphire substrate by metal organic chemical deposition showed a microstructure with a large amount of huge hexagonal hillocks. The polarity of the sample is confirmed by etching with sodium hydroxide solution. The luminous intensity distribution of a typical hexagonal hillock was investigated by the phototluminescent mapping and the luminous intensity at hillock top regions was found to be 15 times higher than that of the regions around hillocks. The reduction of dislocations, the decreasing of the quantum confirmed stack effect caused by semipolar plane and the inclination of the sidewalls of the hexagonal hillock were responsible for the enhancement of luminous intensity.

Performance analysis of GeSn-alloy-based multiple quantum well transistor laser

NASA Astrophysics Data System (ADS)

Ranjan, Ravi; Pareek, Prakash; Anwer Askari, Syed Sadique; Das, Mukul K.

2018-02-01

The Group IV Photonics (GFP) which include an alloy of Si, Ge & Sn that gives a direct bandgap material (GeSn, SiGeSn) in near and mid-IR region used as an active material in photonics devices. The multiple quantum well SiGeSn/GeSn transistor laser structure is considered in this paper and performance parameters are evaluated for the same. The result shows that the threshold base current density (2.6 kA/cm2) for the proposed device initially decreases with increasing number of quantum well (QW) and later on it saturates. The current gain and output photon density of the device decreases and increases respectively, with increasing number of QW.

Resonance fluorescence trajectories in superconducting qubit

NASA Astrophysics Data System (ADS)

Naghiloo, Mahdi; Tan, Dian; Harrington, Patrick; Lewalle, Philippe; Jordan, Andrew; Murch, Kater

We employ phase-sensitive amplification to perform homodyne detection of the resonance fluorescence from a driven superconducting artificial atom. Entanglement between the emitter and its fluorescence allows us to track the individual quantum state trajectories of the emitter. We analyze the ensemble properties of these trajectories by considering paths that connect specific initial and final states. By applying a stochastic path integral formalism, we calculate equations of motion for the most likely path between two quantum states and compare these predicted paths to experimental data. Drawing on the mathematical similarity between the action formalism of the most likely quantum paths and ray optics, we study the emergence of caustics in quantum trajectories-situations where multiple extrema in the stochastic action occur. We observe such multiple most likely paths in experimental data and find these paths to be in reasonable quantitative agreement with theoretical calculations. Supported by the John Templeton Foundation.

Multiple exciton generation for photoelectrochemical hydrogen evolution reactions with quantum yields exceeding 100%

DOE PAGES

Yan, Yong; Crisp, Ryan W.; Gu, Jing; ...

2017-04-03

Multiple exciton generation (MEG) in quantum dots (QDs) has the potential to greatly increase the power conversion efficiency in solar cells and in solar-fuel production. During the MEG process, two electron-hole pairs (excitons) are created from the absorption of one high-energy photon, bypassing hot-carrier cooling via phonon emission. Here we demonstrate that extra carriers produced via MEG can be used to drive a chemical reaction with quantum efficiency above 100%. We developed a lead sulfide (PbS) QD photoelectrochemical cell that is able to drive hydrogen evolution from aqueous Na 2S solution with a peak external quantum efficiency exceeding 100%. QDmore » photoelectrodes that were measured all demonstrated MEG when the incident photon energy was larger than 2.7 times the bandgap energy. Finally, our results demonstrate a new direction in exploring high-efficiency approaches to solar fuels.« less

A multiple-scattering polaritonic-operator method for hybrid arrays of metal nanoparticles and quantum emitters

NASA Astrophysics Data System (ADS)

Chatzidakis, Georgios D.; Yannopapas, Vassilios

2018-05-01

We present a new technique for the study of hybrid collections of quantum emitters (atoms, molecules, quantum dots) with nanoparticles. The technique is based on a multiple-scattering polaritonic-operator formalism in conjunction with an electromagnetic coupled dipole method. Apart from collections of quantum emitters and nanoparticles, the method can equally treat the interaction of a collection of quantum emitters with a single nano-object of arbitrary shape in which case the nano-object is treated as a finite three-dimensional lattice of point scatterers. We have applied our method to the case of linear array (chain) of dimers of quantum emitters and metallic nanoparticles wherein the corresponding (geometrical and physical) parameters of the dimers are chosen so as the interaction between the emitter and the nanoparticle lies in the strong-coupling regime in order to enable the formation of plexciton states in the dimer. In particular, for a linear chain of dimers, we show that the corresponding light spectra reveal a multitude of plexciton modes resulting from the hybridization of the plexciton resonances of each individual dimer in a manner similar to the tight-binding description of electrons in solids.

Microscopic Optical Characterization of Free Standing III-Nitride Substrates, ZnO Bulk Crystals, and III-V Structures for Non-Linear Optics. Part 2

DTIC Science & Technology

2010-05-18

strong radiation hardness of ZnO. Positron annihilation studies have revealed the presence of Zn vacancies under high energy electron irradiation, as...SUPPLEMENTARY NOTES 14. ABSTRACT CL study of ammonothermal GaN crystals. Preliminary results on ammonothermal AlGaN crystals show a clear...prevalence of deep level luminescence Study of the luminescence spectral characteristics. Optimization of the excitonic emission vs deep level emission

Characterization of Local Carrier Dynamics in AlN and AlGaN Films using High Spatial- and Time-resolution Cathodoluminescence Spectroscopy

DTIC Science & Technology

2012-10-12

21/2012 Abstract: In order to assess the impacts of structural and point defects on the local carrier (exciton) recombination dynamics in...quantitatively understood as functions of structural / point defect and impurity concentrations (crystal imperfections). However, only few papers [5...NOTES 14. ABSTRACT In order to assess the impacts of structural and point defects on the local carrier (exciton) recombination dynamics in wide bandgap

Noise characterization of enhancement-mode AlGaN graded barrier MIS-HEMT devices

NASA Astrophysics Data System (ADS)

Mohanbabu, A.; Saravana Kumar, R.; Mohankumar, N.

2017-12-01

This paper reports a systematic theoretical study on the microwave noise performance of graded AlGaN/GaN metal-insulator semiconductor high-electron mobility transistors (MIS-HEMTs) built on an Al2O3 substrate. The HfAlOx/AlGaN/GaN MIS-HEMT devices designed for this study show an outstanding small signal analog/RF and noise performance. The results on 1 μm gate length device show an enhancement mode operation with threshold voltage, VT = + 5.3 V, low drain leakage current, Ids,LL in the order of 1 × 10-9 A/mm along with high current gain cut-off frequency, fT of 17 GHz and maximum oscillation frequency fmax of 47 GHz at Vds = 10 V. The device Isbnd V and low-frequency noise estimation of the gate and drain noise spectral density and their correlation are evaluated using a Green's function method under different biasing conditions. The devices show a minimum noise figure (NFmin) of 1.053 dB in combination with equivalent noise resistance (Rn) of 23 Ω at 17 GHz, at Vgs = 6 V and Vds = 5 V which is relatively low and is suitable for broad-band low-noise amplifiers. This study shows that the graded AlGaN MIS-HEMT with HfAlOX gate insulator is appropriate for application requiring high-power and low-noise.

Al0 0.3Ga 0.7N PN diode with breakdown voltage >1600 V

DOE PAGES

Allerman, A. A.; Armstrong, A. M.; Fischer, A. J.; ...

2016-07-21

Demonstration of Al0 0.3Ga 0.7N PN diodes grown with breakdown voltages in excess of 1600 V is reported. The total epilayer thickness is 9.1 μm and was grown by metal-organic vapour-phase epitaxy on 1.3-mm-thick sapphire in order to achieve crack-free structures. A junction termination edge structure was employed to control the lateral electric fields. A current density of 3.5 kA/cm 2 was achieved under DC forward bias and a reverse leakage current <3 nA was measured for voltages <1200 V. The differential on-resistance of 16 mΩ cm 2 is limited by the lateral conductivity of the n-type contact layer requiredmore » by the front-surface contact geometry of the device. An effective critical electric field of 5.9 MV/cm was determined from the epilayer properties and the reverse current–voltage characteristics. To our knowledge, this is the first aluminium gallium nitride (AlGaN)-based PN diode exhibiting a breakdown voltage in excess of 1 kV. Finally, we note that a Baliga figure of merit (V br 2/R spec,on) of 150 MW/cm 2 found is the highest reported for an AlGaN PN diode and illustrates the potential of larger-bandgap AlGaN alloys for high-voltage devices.« less

Reducing Mg Acceptor Activation-Energy in Al0.83Ga0.17N Disorder Alloy Substituted by Nanoscale (AlN)5/(GaN)1 Superlattice Using MgGa δ-Doping: Mg Local-Structure Effect

NASA Astrophysics Data System (ADS)

Zhong, Hong-Xia; Shi, Jun-Jie; Zhang, Min; Jiang, Xin-He; Huang, Pu; Ding, Yi-Min

2014-10-01

Improving p-type doping efficiency in Al-rich AlGaN alloys is a worldwide problem for the realization of AlGaN-based deep ultraviolet optoelectronic devices. In order to solve this problem, we calculate Mg acceptor activation energy and investigate its relationship with Mg local structure in nanoscale (AlN)5/(GaN)1 superlattice (SL), a substitution for Al0.83Ga0.17N disorder alloy, using first-principles calculations. A universal picture to reduce acceptor activation energy in wide-gap semiconductors is given for the first time. By reducing the volume of the acceptor local structure slightly, its activation energy can be decreased remarkably. Our results show that Mg acceptor activation energy can be reduced significantly from 0.44 eV in Al0.83Ga0.17N disorder alloy to 0.26 eV, very close to the Mg acceptor activation energy in GaN, and a high hole concentration in the order of 1019 cm-3 can be obtained in (AlN)5/(GaN)1 SL by MgGa δ-doping owing to GaN-monolayer modulation. We thus open up a new way to reduce Mg acceptor activation energy and increase hole concentration in Al-rich AlGaN.

Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlattices

PubMed Central

Zheng, T. C.; Lin, W.; Liu, R.; Cai, D. J.; Li, J. C.; Li, S. P.; Kang, J. Y.

2016-01-01

A novel multidimensional Mg-doped superlattice (SL) is proposed to enhance vertical hole conductivity in conventional Mg-doped AlGaN SL which generally suffers from large potential barrier for holes. Electronic structure calculations within the first-principle theoretical framework indicate that the densities of states (DOS) of the valence band nearby the Fermi level are more delocalized along the c-axis than that in conventional SL, and the potential barrier significantly decreases. Hole concentration is greatly enhanced in the barrier of multidimensional SL. Detailed comparisons of partial charges and decomposed DOS reveal that the improvement of vertical conductance may be ascribed to the stronger pz hybridization between Mg and N. Based on the theoretical analysis, highly conductive p-type multidimensional Al0.63Ga0.37N/Al0.51Ga0.49N SLs are grown with identified steps via metalorganic vapor-phase epitaxy. The hole concentration reaches up to 3.5 × 1018 cm−3, while the corresponding resistivity reduces to 0.7 Ω cm at room temperature, which is tens times improvement in conductivity compared with that of conventional SLs. High hole concentration can be maintained even at 100 K. High p-type conductivity in Al-rich structural material is an important step for the future design of superior AlGaN-based deep ultraviolet devices. PMID:26906334

Reducing Mg acceptor activation-energy in Al(0.83)Ga(0.17)N disorder alloy substituted by nanoscale (AlN)₅/(GaN)₁ superlattice using Mg(Ga) δ-doping: Mg local-structure effect.

PubMed

Zhong, Hong-xia; Shi, Jun-jie; Zhang, Min; Jiang, Xin-he; Huang, Pu; Ding, Yi-min

2014-10-23

Improving p-type doping efficiency in Al-rich AlGaN alloys is a worldwide problem for the realization of AlGaN-based deep ultraviolet optoelectronic devices. In order to solve this problem, we calculate Mg acceptor activation energy and investigate its relationship with Mg local structure in nanoscale (AlN)5/(GaN)1 superlattice (SL), a substitution for Al(0.83)Ga(0.17)N disorder alloy, using first-principles calculations. A universal picture to reduce acceptor activation energy in wide-gap semiconductors is given for the first time. By reducing the volume of the acceptor local structure slightly, its activation energy can be decreased remarkably. Our results show that Mg acceptor activation energy can be reduced significantly from 0.44 eV in Al(0.83)Ga(0.17)N disorder alloy to 0.26 eV, very close to the Mg acceptor activation energy in GaN, and a high hole concentration in the order of 10(19) cm(-3) can be obtained in (AlN)5/(GaN)1 SL by Mg(Ga) δ-doping owing to GaN-monolayer modulation. We thus open up a new way to reduce Mg acceptor activation energy and increase hole concentration in Al-rich AlGaN.

Quantum Feynman Ratchet

NASA Astrophysics Data System (ADS)

Goyal, Ketan; Kawai, Ryoichi

As nanotechnology advances, understanding of the thermodynamic properties of small systems becomes increasingly important. Such systems are found throughout physics, biology, and chemistry manifesting striking properties that are a direct result of their small dimensions where fluctuations become predominant. The standard theory of thermodynamics for macroscopic systems is powerless for such ever fluctuating systems. Furthermore, as small systems are inherently quantum mechanical, influence of quantum effects such as discreteness and quantum entanglement on their thermodynamic properties is of great interest. In particular, the quantum fluctuations due to quantum uncertainty principles may play a significant role. In this talk, we investigate thermodynamic properties of an autonomous quantum heat engine, resembling a quantum version of the Feynman Ratchet, in non-equilibrium condition based on the theory of open quantum systems. The heat engine consists of multiple subsystems individually contacted to different thermal environments.

Towards a Quantum Memory assisted MDI-QKD node

NASA Astrophysics Data System (ADS)

Namazi, Mehdi; Vallone, Giuseppe; Jordaan, Bertus; Goham, Connor; Shahrokhshahi, Reihaneh; Villoresi, Paolo; Figueroa, Eden

2017-04-01

The creation of large quantum network that permits the communication of quantum states and the secure distribution of cryptographic keys requires multiple operational quantum memories. In this work we present our progress towards building a prototypical quantum network that performs the memory-assisted measurement device independent QKD protocol. Currently our network combines the quantum part of the BB84 protocol with room-temperature quantum memory operation, while still maintaining relevant quantum bit error rates for single-photon level operation. We will also discuss our efforts to use a network of two room temperature quantum memories, receiving, storing and transforming randomly polarized photons in order to realize Bell state measurements. The work was supported by the US-Navy Office of Naval Research, Grant Number N00141410801, the National Science Foundation, Grant Number PHY-1404398 and the Simons Foundation, Grant Number SBF241180.

Joining the quantum state of two photons into one

NASA Astrophysics Data System (ADS)

Vitelli, Chiara; Spagnolo, Nicolò; Aparo, Lorenzo; Sciarrino, Fabio; Santamato, Enrico; Marrucci, Lorenzo

2013-07-01

Photons are the ideal carriers of quantum information for communication. Each photon can have a single or multiple qubits encoded in its internal quantum state, as defined by optical degrees of freedom such as polarization, wavelength, transverse modes and so on. However, as photons do not interact, multiplexing and demultiplexing the quantum information across photons has not been possible hitherto. Here, we introduce and demonstrate experimentally a physical process, named `quantum joining', in which the two-dimensional quantum states (qubits) of two input photons are combined into a single output photon, within a four-dimensional Hilbert space. The inverse process is also proposed, in which the four-dimensional quantum state of a single photon is split into two photons, each carrying a qubit. Both processes can be iterated, and hence provide a flexible quantum interconnect to bridge multiparticle protocols of quantum information with multidegree-of-freedom ones, with possible applications in future quantum networking.

Origins and optimization of entanglement in plasmonically coupled quantum dots

DOE PAGES

Otten, Matthew; Larson, Jeffrey; Min, Misun; ...

2016-08-11

In this paper, a system of two or more quantum dots interacting with a dissipative plasmonic nanostructure is investigated in detail by using a cavity quantum electrodynamics approach with a model Hamiltonian. We focus on determining and understanding system configurations that generate multiple bipartite quantum entanglements between the occupation states of the quantum dots. These configurations include allowing for the quantum dots to be asymmetrically coupled to the plasmonic system. Analytical solution of a simplified limit for an arbitrary number of quantum dots and numerical simulations and optimization for the two- and three-dot cases are used to develop guidelines formore » maximizing the bipartite entanglements. For any number of quantum dots, we show that through simple starting states and parameter guidelines, one quantum dot can be made to share a strong amount of bipartite entanglement with all other quantum dots in the system, while entangling all other pairs to a lesser degree.« less

Entropic Uncertainty Relation and Information Exclusion Relation for multiple measurements in the presence of quantum memory

NASA Astrophysics Data System (ADS)

Zhang, Jun; Zhang, Yang; Yu, Chang-Shui

2015-06-01

The Heisenberg uncertainty principle shows that no one can specify the values of the non-commuting canonically conjugated variables simultaneously. However, the uncertainty relation is usually applied to two incompatible measurements. We present tighter bounds on both entropic uncertainty relation and information exclusion relation for multiple measurements in the presence of quantum memory. As applications, three incompatible measurements on Werner state and Horodecki’s bound entangled state are investigated in details.

Corrigendum to "Multiple-quantum spin counting in magic-angle-spinning NMR via low-power symmetry-based dipolar recoupling" [J. Magn. Reson. 236 (2013) 31-40

NASA Astrophysics Data System (ADS)

Teymoori, Gholamhasan; Pahari, Bholanath; Viswanathan, Elumalai; Edén, Mattias

2017-03-01

The authors regret that an inappropriate NMR data processing, not known to all authors at the time of publication, was used to produce the multiple-quantum coherence (MQC) spin counting data presented in our article: this lead to artificially enhanced results, particularly concerning those obtained at long MQC excitation intervals (τexc). Here we reproduce Figs. 4-7 with correctly processed data.

An analytical derivation of MC-SCF vibrational wave functions for the quantum dynamical simulation of multiple proton transfer reactions: Initial application to protonated water chains

NASA Astrophysics Data System (ADS)

Drukker, Karen; Hammes-Schiffer, Sharon

1997-07-01

This paper presents an analytical derivation of a multiconfigurational self-consistent-field (MC-SCF) solution of the time-independent Schrödinger equation for nuclear motion (i.e. vibrational modes). This variational MC-SCF method is designed for the mixed quantum/classical molecular dynamics simulation of multiple proton transfer reactions, where the transferring protons are treated quantum mechanically while the remaining degrees of freedom are treated classically. This paper presents a proof that the Hellmann-Feynman forces on the classical degrees of freedom are identical to the exact forces (i.e. the Pulay corrections vanish) when this MC-SCF method is used with an appropriate choice of basis functions. This new MC-SCF method is applied to multiple proton transfer in a protonated chain of three hydrogen-bonded water molecules. The ground state and the first three excited state energies and the ground state forces agree well with full configuration interaction calculations. Sample trajectories are obtained using adiabatic molecular dynamics methods, and nonadiabatic effects are found to be insignificant for these sample trajectories. The accuracy of the excited states will enable this MC-SCF method to be used in conjunction with nonadiabatic molecular dynamics methods. This application differs from previous work in that it is a real-time quantum dynamical nonequilibrium simulation of multiple proton transfer in a chain of water molecules.

Buffer transport mechanisms in intentionally carbon doped GaN heterojunction field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Uren, Michael J.; Cäsar, Markus; Kuball, Martin

2014-06-30

Temperature dependent pulsed and ramped substrate bias measurements are used to develop a detailed understanding of the vertical carrier transport in the buffer layers in a carbon doped GaN power heterojunction field effect transistor. Carbon doped GaN and multiple layers of AlGaN alloy are used in these devices to deliver an insulating and strain relieved buffer with high breakdown voltage capability. However, understanding of the detailed physical mechanism for its operation is still lacking. At the lowest electric fields (<10 MV/m), charge redistribution within the C doped layer is shown to occur by hole conduction in the valence band withmore » activation energy 0.86 eV. At higher fields, leakage between the two-dimensional electron gas and the buffer dominates occurring by a Poole-Frenkel mechanism with activation energy ∼0.65 eV, presumably along threading dislocations. At higher fields still, the strain relief buffer starts to conduct by a field dependent process. Balancing the onset of these leakage mechanisms is essential to allow the build-up of positive rather than negative space charge, and thus minimize bulk-related current-collapse in these devices.« less

Adiabatic Quantum Computation: Coherent Control Back Action.

PubMed

Goswami, Debabrata

2006-11-22

Though attractive from scalability aspects, optical approaches to quantum computing are highly prone to decoherence and rapid population loss due to nonradiative processes such as vibrational redistribution. We show that such effects can be reduced by adiabatic coherent control, in which quantum interference between multiple excitation pathways is used to cancel coupling to the unwanted, non-radiative channels. We focus on experimentally demonstrated adiabatic controlled population transfer experiments wherein the details on the coherence aspects are yet to be explored theoretically but are important for quantum computation. Such quantum computing schemes also form a back-action connection to coherent control developments.

Generation of Nonclassical Biphoton States through Cascaded Quantum Walks on a Nonlinear Chip

NASA Astrophysics Data System (ADS)

Solntsev, Alexander S.; Setzpfandt, Frank; Clark, Alex S.; Wu, Che Wen; Collins, Matthew J.; Xiong, Chunle; Schreiber, Andreas; Katzschmann, Fabian; Eilenberger, Falk; Schiek, Roland; Sohler, Wolfgang; Mitchell, Arnan; Silberhorn, Christine; Eggleton, Benjamin J.; Pertsch, Thomas; Sukhorukov, Andrey A.; Neshev, Dragomir N.; Kivshar, Yuri S.

2014-07-01

We demonstrate a nonlinear optical chip that generates photons with reconfigurable nonclassical spatial correlations. We employ a quadratic nonlinear waveguide array, where photon pairs are generated through spontaneous parametric down-conversion and simultaneously spread through quantum walks between the waveguides. Because of the quantum interference of these cascaded quantum walks, the emerging photons can become entangled over multiple waveguide positions. We experimentally observe highly nonclassical photon-pair correlations, confirming the high fidelity of on-chip quantum interference. Furthermore, we demonstrate biphoton-state tunability by spatial shaping and frequency tuning of the classical pump beam.

Quantum Communication without Alignment using Multiple-Qubit Single-Photon States

NASA Astrophysics Data System (ADS)

Aolita, L.; Walborn, S. P.

2007-03-01

We propose a scheme for encoding logical qubits in a subspace protected against collective rotations around the propagation axis using the polarization and transverse spatial degrees of freedom of single photons. This encoding allows for quantum key distribution without the need of a shared reference frame. We present methods to generate entangled states of two logical qubits using present day down-conversion sources and linear optics, and show that the application of these entangled logical states to quantum information schemes allows for alignment-free tests of Bell’s inequalities, quantum dense coding, and quantum teleportation.

Investigating and Improving Student Understanding of Key Ideas in Quantum Mechanics throughout Instruction

NASA Astrophysics Data System (ADS)

Emigh, Paul Jeffrey

This dissertation describes research on student understanding of quantum mechanics across multiple levels of instruction. The primary focus has been to identify patterns in student reasoning related to key concepts in quantum mechanics. The specific topics include quantum measurements, time dependence, vector spaces, and angular momentum. The research has spanned a variety of different quantum courses intended for introductory physics students, upper-division physics majors, and graduate students in physics. The results of this research have been used to develop a set of curriculum, Tutorials in Physics: Quantum Mechanics, for addressing the most persistent student difficulties. We document both the development of this curriculum and how it has impacted and improved student understanding of quantum mechanics.

Toward real-time quantum imaging with a single pixel camera

DOE PAGES

Lawrie, B. J.; Pooser, R. C.

2013-03-19

In this paper, we present a workbench for the study of real-time quantum imaging by measuring the frame-by-frame quantum noise reduction of multi-spatial-mode twin beams generated by four wave mixing in Rb vapor. Exploiting the multiple spatial modes of this squeezed light source, we utilize spatial light modulators to selectively pass macropixels of quantum correlated modes from each of the twin beams to a high quantum efficiency balanced detector. Finally, in low-light-level imaging applications, the ability to measure the quantum correlations between individual spatial modes and macropixels of spatial modes with a single pixel camera will facilitate compressive quantum imagingmore » with sensitivity below the photon shot noise limit.« less

Quantum CSMA/CD Synchronous Communication Protocol with Entanglement

NASA Astrophysics Data System (ADS)

Zhou, Nanrun; Zeng, Binyang; Gong, Lihua

By utilizing the characteristics of quantum entanglement, a quantum synchronous communication protocol for Carrier Sense Multiple Access with Collision Detection (CSMA/CD) is presented. The proposed protocol divides the link into the busy time and leisure one, where the data frames are sent via classical channels and the distribution of quantum entanglement is supposed to be completed at leisure time and the quantum acknowledge frames are sent via quantum entanglement channels. The time span between two successfully delivered messages can be significantly reduced in this proposed protocol. It is shown that the performance of the CSMA/CD protocol can be improved significantly since the collision can be reduced to a certain extent. The proposed protocol has great significance in quantum communication.

Generation of multiphoton entangled quantum states by means of integrated frequency combs.

PubMed

Reimer, Christian; Kues, Michael; Roztocki, Piotr; Wetzel, Benjamin; Grazioso, Fabio; Little, Brent E; Chu, Sai T; Johnston, Tudor; Bromberg, Yaron; Caspani, Lucia; Moss, David J; Morandotti, Roberto

2016-03-11

Complex optical photon states with entanglement shared among several modes are critical to improving our fundamental understanding of quantum mechanics and have applications for quantum information processing, imaging, and microscopy. We demonstrate that optical integrated Kerr frequency combs can be used to generate several bi- and multiphoton entangled qubits, with direct applications for quantum communication and computation. Our method is compatible with contemporary fiber and quantum memory infrastructures and with chip-scale semiconductor technology, enabling compact, low-cost, and scalable implementations. The exploitation of integrated Kerr frequency combs, with their ability to generate multiple, customizable, and complex quantum states, can provide a scalable, practical, and compact platform for quantum technologies. Copyright © 2016, American Association for the Advancement of Science.

Multipulse addressing of a Raman quantum memory: configurable beam splitting and efficient readout.

PubMed

Reim, K F; Nunn, J; Jin, X-M; Michelberger, P S; Champion, T F M; England, D G; Lee, K C; Kolthammer, W S; Langford, N K; Walmsley, I A

2012-06-29

Quantum memories are vital to the scalability of photonic quantum information processing (PQIP), since the storage of photons enables repeat-until-success strategies. On the other hand, the key element of all PQIP architectures is the beam splitter, which allows us to coherently couple optical modes. Here, we show how to combine these crucial functionalities by addressing a Raman quantum memory with multiple control pulses. The result is a coherent optical storage device with an extremely large time bandwidth product, that functions as an array of dynamically configurable beam splitters, and that can be read out with arbitrarily high efficiency. Networks of such devices would allow fully scalable PQIP, with applications in quantum computation, long distance quantum communications and quantum metrology.

Sensitivity to Heavy-Metal Ions of Unfolded Fullerene Quantum Dots

PubMed Central

Ciotta, Erica; Paoloni, Stefano; Richetta, Maria; Tagliatesta, Pietro; Lorecchio, Chiara; Casciardi, Stefano

2017-01-01

A novel type of graphene-like quantum dots, synthesized by oxidation and cage-opening of C60 buckminsterfullerene, has been studied as a fluorescent and absorptive probe for heavy-metal ions. The lattice structure of such unfolded fullerene quantum dots (UFQDs) is distinct from that of graphene since it includes both carbon hexagons and pentagons. The basic optical properties, however, are similar to those of regular graphene oxide quantum dots. On the other hand, UFQDs behave quite differently in the presence of heavy-metal ions, in that multiple sensitivity to Cu2+, Pb2+ and As(III) was observed through comparable quenching of the fluorescent emission and different variations of the transmittance spectrum. By dynamic light scattering measurements and transmission electron microscope (TEM) images we confirmed, for the first time in metal sensing, that this response is due to multiple complexation and subsequent aggregation of UFQDs. Nonetheless, the explanation of the distinct behaviour of transmittance in the presence of As(III) and the formation of precipitate with Pb2+ require further studies. These differences, however, also make it possible to discriminate between the three metal ions in view of the implementation of a selective multiple sensor. PMID:29135946

Quantum spin chains with multiple dynamics

NASA Astrophysics Data System (ADS)

Chen, Xiao; Fradkin, Eduardo; Witczak-Krempa, William

2017-11-01

Many-body systems with multiple emergent time scales arise in various contexts, including classical critical systems, correlated quantum materials, and ultracold atoms. We investigate such nontrivial quantum dynamics in a different setting: a spin-1 bilinear-biquadratic chain. It has a solvable entangled ground state, but a gapless excitation spectrum that is poorly understood. By using large-scale density matrix renormalization group simulations, we find that the lowest excitations have a dynamical exponent z that varies from 2 to 3.2 as we vary a coupling in the Hamiltonian. We find an additional gapless mode with a continuously varying exponent 2 ≤z <2.7 , which establishes the presence of multiple dynamics. In order to explain these striking properties, we construct a continuum wave function for the ground state, which correctly describes the correlations and entanglement properties. We also give a continuum parent Hamiltonian, but show that additional ingredients are needed to capture the excitations of the chain. By using an exact mapping to the nonequilibrium dynamics of a classical spin chain, we find that the large dynamical exponent is due to subdiffusive spin motion. Finally, we discuss the connections to other spin chains and to a family of quantum critical models in two dimensions.

Optimization of carrier multiplication for more effcient solar cells: the case of Sn quantum dots.

PubMed

Allan, Guy; Delerue, Christophe

2011-09-27

We present calculations of impact ionization rates, carrier multiplication yields, and solar-power conversion efficiencies in solar cells based on quantum dots (QDs) of a semimetal, α-Sn. Using these results and previous ones on PbSe and PbS QDs, we discuss a strategy to select QDs with the highest carrier multiplication rate for more efficient solar cells. We suggest using QDs of materials with a close to zero band gap and a high multiplicity of the bands in order to favor the relaxation of photoexcited carriers by impact ionization. Even in that case, the improvement of the maximum solar-power conversion efficiency appears to be a challenging task. © 2011 American Chemical Society

Quantum state sharing against the controller's cheating

NASA Astrophysics Data System (ADS)

Shi, Run-hua; Zhong, Hong; Huang, Liu-sheng

2013-08-01

Most existing QSTS schemes are equivalent to the controlled teleportation, in which a designated agent (i.e., the recoverer) can recover the teleported state with the help of the controllers. However, the controller may attempt to cheat the recoverer during the phase of recovering the secret state. How can we detect this cheating? In this paper, we considered the problem of detecting the controller's cheating in Quantum State Sharing, and further proposed an effective Quantum State Sharing scheme against the controller's cheating. We cleverly use Quantum Secret Sharing, Multiple Quantum States Sharing and decoy-particle techniques. In our scheme, via a previously shared entanglement state Alice can teleport multiple arbitrary multi-qubit states to Bob with the help of Charlie. Furthermore, by the classical information shared previously, Alice and Bob can check whether there is any cheating of Charlie. In addition, our scheme only needs to perform Bell-state and single-particle measurements, and to apply C-NOT gate and other single-particle unitary operations. With the present techniques, it is feasible to implement these necessary measurements and operations.

Multiple quantum phase transitions and superconductivity in Ce-based heavy fermions.

PubMed

Weng, Z F; Smidman, M; Jiao, L; Lu, Xin; Yuan, H Q

2016-09-01

Heavy fermions have served as prototype examples of strongly-correlated electron systems. The occurrence of unconventional superconductivity in close proximity to the electronic instabilities associated with various degrees of freedom points to an intricate relationship between superconductivity and other electronic states, which is unique but also shares some common features with high temperature superconductivity. The magnetic order in heavy fermion compounds can be continuously suppressed by tuning external parameters to a quantum critical point, and the role of quantum criticality in determining the properties of heavy fermion systems is an important unresolved issue. Here we review the recent progress of studies on Ce based heavy fermion superconductors, with an emphasis on the superconductivity emerging on the edge of magnetic and charge instabilities as well as the quantum phase transitions which occur by tuning different parameters, such as pressure, magnetic field and doping. We discuss systems where multiple quantum critical points occur and whether they can be classified in a unified manner, in particular in terms of the evolution of the Fermi surface topology.

Performance analysis of quantum access network using code division multiple access model

NASA Astrophysics Data System (ADS)

Hu, Linxi; Yang, Can; He, Guangqiang

2017-06-01

Not Available Project supported by the National Natural Science Foundation of China (Grant Nos. 61475099 and 61102053), the Program of State Key Laboratory of Quantum Optics and Quantum Optics Devices (Grant No. KF201405), the Open Fund of IPOC (BUPT) (Grant No. IPOC2015B004), and the Program of State Key Laboratory of Information Security (Grant No. 2016-MS-05).

Massive quantum regions for simulations on bio-nanomaterials: synthetic ferritin nanocages.

PubMed

Torras, Juan; Alemán, Carlos

2018-02-22

QM/MM molecular dynamics simulations on the 4His-ΔC* protein cage have been performed using multiple active zones (up to 86 quantum regions). The regulation and nanocage stability exerted by the divalent transition metal ions in the monomer-to-cage conversion have been understood by comparing high level quantum trajectories obtained using Cu 2+ and Ni 2+ coordination ions.

Optimal quantum control of multimode couplings between trapped ion qubits for scalable entanglement.

PubMed

Choi, T; Debnath, S; Manning, T A; Figgatt, C; Gong, Z-X; Duan, L-M; Monroe, C

2014-05-16

We demonstrate entangling quantum gates within a chain of five trapped ion qubits by optimally shaping optical fields that couple to multiple collective modes of motion. We individually address qubits with segmented optical pulses to construct multipartite entangled states in a programmable way. This approach enables high-fidelity gates that can be scaled to larger qubit registers for quantum computation and simulation.

Massive Photons: An Infrared Regularization Scheme for Lattice QCD+QED.

PubMed

Endres, Michael G; Shindler, Andrea; Tiburzi, Brian C; Walker-Loud, André

2016-08-12

Standard methods for including electromagnetic interactions in lattice quantum chromodynamics calculations result in power-law finite-volume corrections to physical quantities. Removing these by extrapolation requires costly computations at multiple volumes. We introduce a photon mass to alternatively regulate the infrared, and rely on effective field theory to remove its unphysical effects. Electromagnetic modifications to the hadron spectrum are reliably estimated with a precision and cost comparable to conventional approaches that utilize multiple larger volumes. A significant overall cost advantage emerges when accounting for ensemble generation. The proposed method may benefit lattice calculations involving multiple charged hadrons, as well as quantum many-body computations with long-range Coulomb interactions.

Wavevector multiplexed atomic quantum memory via spatially-resolved single-photon detection.

PubMed

Parniak, Michał; Dąbrowski, Michał; Mazelanik, Mateusz; Leszczyński, Adam; Lipka, Michał; Wasilewski, Wojciech

2017-12-15

Parallelized quantum information processing requires tailored quantum memories to simultaneously handle multiple photons. The spatial degree of freedom is a promising candidate to facilitate such photonic multiplexing. Using a single-photon resolving camera, we demonstrate a wavevector multiplexed quantum memory based on a cold atomic ensemble. Observation of nonclassical correlations between Raman scattered photons is confirmed by an average value of the second-order correlation function [Formula: see text] in 665 separated modes simultaneously. The proposed protocol utilizing the multimode memory along with the camera will facilitate generation of multi-photon states, which are a necessity in quantum-enhanced sensing technologies and as an input to photonic quantum circuits.

Optimal Measurements for Simultaneous Quantum Estimation of Multiple Phases

NASA Astrophysics Data System (ADS)

Pezzè, Luca; Ciampini, Mario A.; Spagnolo, Nicolò; Humphreys, Peter C.; Datta, Animesh; Walmsley, Ian A.; Barbieri, Marco; Sciarrino, Fabio; Smerzi, Augusto

2017-09-01

A quantum theory of multiphase estimation is crucial for quantum-enhanced sensing and imaging and may link quantum metrology to more complex quantum computation and communication protocols. In this Letter, we tackle one of the key difficulties of multiphase estimation: obtaining a measurement which saturates the fundamental sensitivity bounds. We derive necessary and sufficient conditions for projective measurements acting on pure states to saturate the ultimate theoretical bound on precision given by the quantum Fisher information matrix. We apply our theory to the specific example of interferometric phase estimation using photon number measurements, a convenient choice in the laboratory. Our results thus introduce concepts and methods relevant to the future theoretical and experimental development of multiparameter estimation.

Engineering of lead chalcogenide nanostructures for carrier multiplication: Core/shell, 1D, and 2D

NASA Astrophysics Data System (ADS)

Lin, Qianglu

Near infrared emitting semiconductors have been used widely in industry especially in solar-cell fabrications. The efficiency of single junction solar-cell can reach the Shockley-Queisser limit by using optimum band gap material such as silicon and cadmium telluride. The theoretical efficiency can be further enhanced through carrier multiplication, in which a high energy photon is absorbed and more than one electron-hole pair can be generated, reaching more than 100% quantum efficiency in the high energy region of sunlight. The realization of more than unity external quantum efficiency in lead selenide quantum dots solar cell has motivated vast investigation on lowering the carrier multiplication threshold and further improving the efficiency. This dissertation focuses on synthesis of lead chalcogenide nanostructures for their optical spectroscopy studies. PbSe/CdSe core/shell quantum dots were synthesized by cation exchange to obtain thick shells (up to 14 monolayers) for studies of visible and near infrared dual band emissions and carrier multiplication efficiency. By examining the reaction mechanism, a thermodynamic and a kinetic model are introduced to explain the vacancy driven cation exchange. As indicated by the effective mass model, PbSe/CdSe core/shell quantum dots has quasi-type-II band alignment, possessing electron delocalized through the entire quantum dot and hole localized in the core, which breaks down the symmetry of energy levels in the conduction and valence band, leading to hot-hole-assisted efficient multi-exciton generation and a lower carrier multiplication threshold to the theoretical value. For further investigation of carrier multiplication study, PbTe, possessing the highest efficiency among lead chalcogenides due to slow intraband cooling, is synthesized in one-dimensional and two-dimensional nanostructures. By using dodecanethiol as the surfactant, PbTe NRs can be prepared with high uniformity in width and resulted in fine quantum confinement features. The reaction can be explained by a soft-template assisted process, in which the lamellar lead-thiolate precursor transforms into rod-shape micelle in the existence of telluride anions by electrostatic attraction. Fine tuning the reaction condition by changing the solvent to oleylamine, lead telluride nanowires with length up to 200 nm can be prepared, which bundled together because of the strong dipole-dipole attraction between nanowires. Decreasing the amount of surfactant dodecanethiol in the synthesis produces lead telluride nanorings, which formed by attaching four small particles together, leaving the center void. To prepare two-dimensional nanoplatelets, mixture ligands containing two amines with different carbon chain length were used, which initiate oriented attachment of the nanoparticles to form square-shape nanoplatelets. By further adopting stronger binding ligands such as phosphonic acid, PbTe nanoplatelets with micrometer lateral dimension were prepared with extremely sharp near infrared photoluminescence (less than 40 meV), which has never be achieved in quantum dots and other nanostructures.

Injection current dependences of electroluminescence transition energy in InGaN/GaN multiple quantum wells light emitting diodes under pulsed current conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Feng; Ikeda, Masao, E-mail: mikeda2013@sinano.ac.cn; Liu, Jianping

2015-07-21

Injection current dependences of electroluminescence transition energy in blue InGaN/GaN multiple quantum wells light emitting diodes (LEDs) with different quantum barrier thicknesses under pulsed current conditions have been analyzed taking into account the related effects including deformation caused by lattice strain, quantum confined Stark effects due to polarization field partly screened by carriers, band gap renormalization, Stokes-like shift due to compositional fluctuations which are supposed to be random alloy fluctuations in the sub-nanometer scale, band filling effect (Burstein-Moss shift), and quantum levels in finite triangular wells. The bandgap renormalization and band filling effect occurring at high concentrations oppose one another,more » however, the renormalization effect dominates in the concentration range studied, since the band filling effect arising from the filling in the tail states in the valence band of quantum wells is much smaller than the case in the bulk materials. In order to correlate the carrier densities with current densities, the nonradiative recombination rates were deduced experimentally by curve-fitting to the external quantum efficiencies. The transition energies in LEDs both with 15 nm quantum barriers and 5 nm quantum barriers, calculated using full strengths of theoretical macroscopic polarization given by Barnardini and Fiorentini [Phys. Status Solidi B 216, 391 (1999)] are in excellent accordance with experimental results. The LED with 5 nm barriers has been shown to exhibit a higher transition energy and a smaller blue shift than those of LED with 15 nm barriers, which is mainly caused by the smaller internal polarization field in the quantum wells.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Yang; Liu, Zhiqiang, E-mail: lzq@semi.ac.cn, E-mail: spring@semi.ac.cn; Yi, Xiaoyan, E-mail: lzq@semi.ac.cn, E-mail: spring@semi.ac.cn

To evaluate electron leakage in InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs), analytic models of ballistic and quasi-ballistic transport are developed. With this model, the impact of critical variables effecting electron leakage, including the electron blocking layer (EBL), structure of multiple quantum wells (MQWs), polarization field, and temperature are explored. The simulated results based on this model shed light on previously reported experimental observations and provide basic criteria for suppressing electron leakage, advancing the design of InGaN/GaN LEDs.

Nuclear Magnetic Resonance Nondestructive Evaluation of Composite Materials

DTIC Science & Technology

1990-04-09

Pat. Appl. EP 26265, 8 Apr 1981, 13 pp. (1981). 9. A. N. Garroway , J. Baum, M. G. Munowitz, and A. Pines, NMR Imaging in Solids by Multiple-Quantum...Resonance, J. Magn. Reson. 60(2), 337-41 (1984). 10. J. Baum, A. N. Garroway , M. Munowitz, and A. Pines, Multiple-Quantum NMR in Solids: Application to... Garroway , NMR Images of Solids, J. Magn. Reson. 66(3), 530-5 (1986). 28. J. B. Miller and A. N. Garroway , Removal of Static Field Inhomogeneity and

Entropic Uncertainty Relation and Information Exclusion Relation for multiple measurements in the presence of quantum memory

PubMed Central

Zhang, Jun; Zhang, Yang; Yu, Chang-shui

2015-01-01

The Heisenberg uncertainty principle shows that no one can specify the values of the non-commuting canonically conjugated variables simultaneously. However, the uncertainty relation is usually applied to two incompatible measurements. We present tighter bounds on both entropic uncertainty relation and information exclusion relation for multiple measurements in the presence of quantum memory. As applications, three incompatible measurements on Werner state and Horodecki’s bound entangled state are investigated in details. PMID:26118488

Low loss InGaAs/InP multiple quantum well waveguides

NASA Astrophysics Data System (ADS)

Koren, U.; Miller, B. I.; Koch, T. L.; Boyd, G. D.; Capik, R. J.

1986-12-01

Double heterostructure planar waveguides with an InGaAs/InP multiple quantum well (MQW) core and InP cladding layers were grown by atmospheric pressure metalorganic chemical vapor deposition. Ridge waveguides had a low propagation loss of 0.8 dB/cm for 1.52 micron input light. The indices of refraction for the guided TE and TM modes have been measured and the bulk dispersion curves of the MQW material for the 1.46-1.55 micron wavelength region were derived.

Emission wavelength of AlGaAs-GaAs multiple quantum well lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blood, P.; Fletcher, E.D.; Hulyer, P.J.

1986-04-28

We have recorded spontaneous emission spectra from multiple quantum well lasers grown by molecular beam epitaxy with 25-A-wide GaAs wells by opening a window in the top contact stripe. These spectra have a low-energy tail and consequently the gain spectra derived from them show that laser emission occurs at a lower photon energy than the lowest energy confined particle transition. The observed laser wavelength and threshold current are consistent with the position of the peak in the gain spectrum.

Quantum coherence via skew information and its polygamy

NASA Astrophysics Data System (ADS)

Yu, Chang-shui

2017-04-01

Quantifying coherence is a key task in both quantum-mechanical theory and practical applications. Here, a reliable quantum coherence measure is presented by utilizing the quantum skew information of the state of interest subject to a certain broken observable. This coherence measure is proven to fulfill all the criteria (especially the strong monotonicity) recently introduced in the resource theories of quantum coherence. The coherence measure has an analytic expression and an obvious operational meaning related to quantum metrology. In terms of this coherence measure, the distribution of the quantum coherence, i.e., how the quantum coherence is distributed among the multiple parties, is studied and a corresponding polygamy relation is proposed. As a further application, it is found that the coherence measure forms the natural upper bounds for quantum correlations prepared by incoherent operations. The experimental measurements of our coherence measure as well as the relative-entropy coherence and lp-norm coherence are studied finally.

Photoluminescence of ZnTe/ZnMgTe multiple quantum well structures grown on ZnTe substrates by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Tanaka, Tooru; Ohshita, Hiroshi; Saito, Katsuhiko; Guo, Qixin

2018-02-01

Photoluminescence (PL) properties of ZnTe/ZnMgTe quantum well (QW) structures grown by molecular beam epitaxy (MBE) were investigated systematically with respect to well widths and Mg contents. Observed PL peak energies were consistent well with the calculated emission energies of the QWs considering a lattice distortion in the ZnTe well. From the temperature dependence of PL intensity, it was found that a suppression of a carrier escape from QW is crucial to obtain a PL at higher temperature in the ZnTe/ZnMgTe QW. Based on the results, multiple quantum well structures were designed and fabricated, which exhibited a green PL at room temperature.

Robust Multiple-Range Coherent Quantum State Transfer.

PubMed

Chen, Bing; Peng, Yan-Dong; Li, Yong; Qian, Xiao-Feng

2016-07-01

We propose a multiple-range quantum communication channel to realize coherent two-way quantum state transport with high fidelity. In our scheme, an information carrier (a qubit) and its remote partner are both adiabatically coupled to the same data bus, i.e., an N-site tight-binding chain that has a single defect at the center. At the weak interaction regime, our system is effectively equivalent to a three level system of which a coherent superposition of the two carrier states constitutes a dark state. The adiabatic coupling allows a well controllable information exchange timing via the dark state between the two carriers. Numerical results show that our scheme is robust and efficient under practically inevitable perturbative defects of the data bus as well as environmental dephasing noise.

Design and Synthesis of Antiblinking and Antibleaching Quantum Dots in Multiple Colors via Wave Function Confinement.

PubMed

Cao, Hujia; Ma, Junliang; Huang, Lin; Qin, Haiyan; Meng, Renyang; Li, Yang; Peng, Xiaogang

2016-12-07

Single-molecular spectroscopy reveals that photoluminescence (PL) of a single quantum dot blinks, randomly switching between bright and dim/dark states under constant photoexcitation, and quantum dots photobleach readily. These facts cast great doubts on potential applications of these promising emitters. After ∼20 years of efforts, synthesis of nonblinking quantum dots is still challenging, with nonblinking quantum dots only available in red-emitting window. Here we report synthesis of nonblinking quantum dots covering most part of the visible window using a new synthetic strategy, i.e., confining the excited-state wave functions of the core/shell quantum dots within the core quantum dot and its inner shells (≤ ∼5 monolayers). For the red-emitting ones, the new synthetic strategy yields nonblinking quantum dots with small sizes (∼8 nm in diameter) and improved nonblinking properties. These new nonblinking quantum dots are found to be antibleaching. Results further imply that the PL blinking and photobleaching of quantum dots are likely related to each other.

Emulation of complex open quantum systems using superconducting qubits

NASA Astrophysics Data System (ADS)

Mostame, Sarah; Huh, Joonsuk; Kreisbeck, Christoph; Kerman, Andrew J.; Fujita, Takatoshi; Eisfeld, Alexander; Aspuru-Guzik, Alán

2017-02-01

With quantum computers being out of reach for now, quantum simulators are alternative devices for efficient and accurate simulation of problems that are challenging to tackle using conventional computers. Quantum simulators are classified into analog and digital, with the possibility of constructing "hybrid" simulators by combining both techniques. Here we focus on analog quantum simulators of open quantum systems and address the limit that they can beat classical computers. In particular, as an example, we discuss simulation of the chlorosome light-harvesting antenna from green sulfur bacteria with over 250 phonon modes coupled to each electronic state. Furthermore, we propose physical setups that can be used to reproduce the quantum dynamics of a standard and multiple-mode Holstein model. The proposed scheme is based on currently available technology of superconducting circuits consist of flux qubits and quantum oscillators.

Device Performance and Reliability Improvements of AlGaBN/GaN/Si MOSFET

DTIC Science & Technology

2016-02-04

Metal insulator semiconductor AlGaN /GaN high electron mobility transistors (MISHEMTs) are promising for power device applications due to a lower leakage...current than the conventional Schottky AlGaN/GaN HEMTs.1–3 Among a large number of insulator materials, an Al2O3 dielectric layer, deposited by...atomic layer deposition (ALD), is often employed as the gate insulator because of a large band gap (and the resultant high conduction band offset on

Technical Testing of Deep-UV Solid-State Sources for Fluorescence Lifetime Measurements in the Frequency Domain

DTIC Science & Technology

2007-02-01

fluxes at wavelengths short enough for excitation of fluorescence in basic biological fluorophores and bacterial agents. In particular, deep- UV LEDs ...can be used for excitation of aromatic amino acids, whereas near- UV LEDs are suitable for excitation of autofluorescent coenzymes. The SUVOS AlGaN... LEDs as well as commercial InGaN near- UV LEDs were tested for spectral purity and the possibility of high-frequency modulation up to 200 MHz and

Effect of Variation of Silicon Nitride Passivation Layer on Electron Irradiated Aluminum Gallium Nitride/Gallium Nitride HEMT Structures

DTIC Science & Technology

2014-06-19

the AlGaN is unintentionally doped . Figure 2.3. AlGaN/GaN band diagram showing polarization charges. The band diagram in Figure 2.3 shows...intentionally doped as are MESFETS, and the channel gets its electrons from the unintentional doping . There is less Coulomb scattering in the...temperature measurements are often used to provide spatial PL maps of doping and trap densities. Laser excitation (quasi-monochromatic) is

Donors, Acceptors, and Traps in AlGaN and AlGaN/GaN Epitaxial Layers

DTIC Science & Technology

2006-07-31

the background. 3.3 Positron annihilation spectroscopy (PAS): acceptor-type defects Positrons injected into defect-free GaN are annihilated by electrons...electron concentration n, and the average Ga-vacancy VGa concentration deduced from positron annihilation spectroscopy . 0.09 3.47 3.46 - 3.45 •ŗ.47225...of this paper, are often investigated by deep level transient spectroscopy (DLTS), and the usual analysis of DLTS data is based on the assumption that

Hybrid Toffoli gate on photons and quantum spins

PubMed Central

Luo, Ming-Xing; Ma, Song-Ya; Chen, Xiu-Bo; Wang, Xiaojun

2015-01-01

Quantum computation offers potential advantages in solving a number of interesting and difficult problems. Several controlled logic gates, the elemental building blocks of quantum computer, have been realized with various physical systems. A general technique was recently proposed that significantly reduces the realization complexity of multiple-control logic gates by harnessing multi-level information carriers. We present implementations of a key quantum circuit: the three-qubit Toffoli gate. By exploring the optical selection rules of one-sided optical microcavities, a Toffoli gate may be realized on all combinations of photon and quantum spins in the QD-cavity. The three general controlled-NOT gates are involved using an auxiliary photon with two degrees of freedom. Our results show that photons and quantum spins may be used alternatively in quantum information processing. PMID:26568078

Hybrid Toffoli gate on photons and quantum spins.

PubMed

Luo, Ming-Xing; Ma, Song-Ya; Chen, Xiu-Bo; Wang, Xiaojun

2015-11-16

Quantum computation offers potential advantages in solving a number of interesting and difficult problems. Several controlled logic gates, the elemental building blocks of quantum computer, have been realized with various physical systems. A general technique was recently proposed that significantly reduces the realization complexity of multiple-control logic gates by harnessing multi-level information carriers. We present implementations of a key quantum circuit: the three-qubit Toffoli gate. By exploring the optical selection rules of one-sided optical microcavities, a Toffoli gate may be realized on all combinations of photon and quantum spins in the QD-cavity. The three general controlled-NOT gates are involved using an auxiliary photon with two degrees of freedom. Our results show that photons and quantum spins may be used alternatively in quantum information processing.

A quantum extended Kalman filter

NASA Astrophysics Data System (ADS)

Emzir, Muhammad F.; Woolley, Matthew J.; Petersen, Ian R.

2017-06-01

In quantum physics, a stochastic master equation (SME) estimates the state (density operator) of a quantum system in the Schrödinger picture based on a record of measurements made on the system. In the Heisenberg picture, the SME is a quantum filter. For a linear quantum system subject to linear measurements and Gaussian noise, the dynamics may be described by quantum stochastic differential equations (QSDEs), also known as quantum Langevin equations, and the quantum filter reduces to a so-called quantum Kalman filter. In this article, we introduce a quantum extended Kalman filter (quantum EKF), which applies a commutative approximation and a time-varying linearization to systems of nonlinear QSDEs. We will show that there are conditions under which a filter similar to a classical EKF can be implemented for quantum systems. The boundedness of estimation errors and the filtering problem with ‘state-dependent’ covariances for process and measurement noises are also discussed. We demonstrate the effectiveness of the quantum EKF by applying it to systems that involve multiple modes, nonlinear Hamiltonians, and simultaneous jump-diffusive measurements.

Influence of Silver and Gold Nanoparticles and Thin Layers on Charge Carrier Generation in InGaN/GaN Multiple Quantum Well Structures and Crystalline Zinc Oxide Films

NASA Astrophysics Data System (ADS)

Mezdrogina, M. M.; Vinogradov, A. Ya.; Kozhanova, Yu. V.; Levitskii, V. S.

2018-04-01

It has been shown that Ag and Au nanoparticles and thin layers influence charge carrier generation in InGaN/GaN multiple quantum well structures and crystalline ZnO films owing to the surface morphology heterogeneity of the semiconductors. When nanoparticles 10 < d < 20 nm in size are applied on InGaN/GaN multiple quantum well structures with surface morphology less nonuniform than that of ZnO films, the radiation intensity has turned out to grow considerably because of a plasmon resonance with the participation of localized plasmons. The application of Ag or Au layers on the surface of the structures strongly attenuates the radiation. When Ag and Au nanoparticles are applied on crystalline ZnO films obtained by rf magnetron sputtering, the radiation intensity in the short-wavelength part of the spectrum increases insignificantly because of their highly heterogeneous surface morphology.

Monolithic integration of InGaAs/InP multiple quantum wells on SOI substrates for photonic devices

NASA Astrophysics Data System (ADS)

Li, Zhibo; Wang, Mengqi; Fang, Xin; Li, Yajie; Zhou, Xuliang; Yu, Hongyan; Wang, Pengfei; Wang, Wei; Pan, Jiaoqing

2018-02-01

A direct epitaxy of III-V nanowires with InGaAs/InP multiple quantum wells on v-shaped trenches patterned silicon on insulator (SOI) substrates was realized by combining the standard semiconductor fabrication process with the aspect ratio trapping growth technique. Silicon thickness as well as the width and gap of each nanowire were carefully designed to accommodate essential optical properties and appropriate growth conditions. The III-V element ingredient, crystalline quality, and surface topography of the grown nanowires were characterized by X-ray diffraction spectroscopy, photoluminescence, and scanning electron microscope. Geometrical details and chemical information of multiple quantum wells were revealed by transmission electron microscopy and energy dispersive spectroscopy. Numerical simulations confirmed that the optical guided mode supported by one single nanowire was able to propagate 50 μm with ˜30% optical loss. This proposed integration scheme opens up an alternative pathway for future photonic integrations of III-V devices on the SOI platform at nanoscale.

Implementation of generalized quantum measurements for unambiguous discrimination of multiple non-orthogonal coherent states.

PubMed

Becerra, F E; Fan, J; Migdall, A

2013-01-01

Generalized quantum measurements implemented to allow for measurement outcomes termed inconclusive can perform perfect discrimination of non-orthogonal states, a task which is impossible using only measurements with definitive outcomes. Here we demonstrate such generalized quantum measurements for unambiguous discrimination of four non-orthogonal coherent states and obtain their quantum mechanical description, the positive-operator valued measure. For practical realizations of this positive-operator valued measure, where noise and realistic imperfections prevent perfect unambiguous discrimination, we show that our experimental implementation outperforms any ideal standard-quantum-limited measurement performing the same non-ideal unambiguous state discrimination task for coherent states with low mean photon numbers.

Electroreflectance spectra from multiple InGaN/GaN quantum wells in the nonuniform electric field of a p–n junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Avakyants, L. P.; Aslanyan, A. E.; Bokov, P. Yu., E-mail: pavel-bokov@physics.msu.ru

A line at E = 2.77 eV (with a width of Γ = 88 meV) related to interband transitions in the region of multiple quantum wells in the active region is detected in the electroreflectance spectra of the GaN/InGaN/AlGaN heterostructure. As the modulation bias is reduced from 2.9 to 0.4 V, the above line is split into two lines with energies of E{sub 1} = 2.55 eV and E{sub 2} = 2.75 eV and widths of Γ{sub 1} = 66 meV and Γ{sub 2} = 74 meV, respectively. The smaller widths of separate lines indicate that these lines are causedmore » by interband transitions in particular quantum wells within the active region. The difference between the interband transition energies E{sub 1} and E{sub 2} in identical quantum wells in the active region is related to the fact that the quantum wells are in an inhomogeneous electric field of the p–n junction. The magnitudes of the electric-field strengths in particular quantum wells in the active region of the heterostructure are estimated to be 1.6 and 2.2 MV/cm.« less

Single-photon three-qubit quantum logic using spatial light modulators.

PubMed

Kagalwala, Kumel H; Di Giuseppe, Giovanni; Abouraddy, Ayman F; Saleh, Bahaa E A

2017-09-29

The information-carrying capacity of a single photon can be vastly expanded by exploiting its multiple degrees of freedom: spatial, temporal, and polarization. Although multiple qubits can be encoded per photon, to date only two-qubit single-photon quantum operations have been realized. Here, we report an experimental demonstration of three-qubit single-photon, linear, deterministic quantum gates that exploit photon polarization and the two-dimensional spatial-parity-symmetry of the transverse single-photon field. These gates are implemented using a polarization-sensitive spatial light modulator that provides a robust, non-interferometric, versatile platform for implementing controlled unitary gates. Polarization here represents the control qubit for either separable or entangling unitary operations on the two spatial-parity target qubits. Such gates help generate maximally entangled three-qubit Greenberger-Horne-Zeilinger and W states, which is confirmed by tomographical reconstruction of single-photon density matrices. This strategy provides access to a wide range of three-qubit states and operations for use in few-qubit quantum information processing protocols.Photons are essential for quantum information processing, but to date only two-qubit single-photon operations have been realized. Here the authors demonstrate experimentally a three-qubit single-photon linear deterministic quantum gate by exploiting polarization along with spatial-parity symmetry.

Quantum demultiplexer of quantum parameter-estimation information in quantum networks

NASA Astrophysics Data System (ADS)

Xie, Yanqing; Huang, Yumeng; Wu, Yinzhong; Hao, Xiang

2018-05-01

The quantum demultiplexer is constructed by a series of unitary operators and multipartite entangled states. It is used to realize information broadcasting from an input node to multiple output nodes in quantum networks. The scheme of quantum network communication with respect to phase estimation is put forward through the demultiplexer subjected to amplitude damping noises. The generalized partial measurements can be applied to protect the transferring efficiency from environmental noises in the protocol. It is found out that there are some optimal coherent states which can be prepared to enhance the transmission of phase estimation. The dynamics of state fidelity and quantum Fisher information are investigated to evaluate the feasibility of the network communication. While the state fidelity deteriorates rapidly, the quantum Fisher information can be enhanced to a maximum value and then decreases slowly. The memory effect of the environment induces the oscillations of fidelity and quantum Fisher information. The adjustment of the strength of partial measurements is helpful to increase quantum Fisher information.

Minimum Dimension of a Hilbert Space Needed to Generate a Quantum Correlation.

PubMed

Sikora, Jamie; Varvitsiotis, Antonios; Wei, Zhaohui

2016-08-05

Consider a two-party correlation that can be generated by performing local measurements on a bipartite quantum system. A question of fundamental importance is to understand how many resources, which we quantify by the dimension of the underlying quantum system, are needed to reproduce this correlation. In this Letter, we identify an easy-to-compute lower bound on the smallest Hilbert space dimension needed to generate a given two-party quantum correlation. We show that our bound is tight on many well-known correlations and discuss how it can rule out correlations of having a finite-dimensional quantum representation. We show that our bound is multiplicative under product correlations and also that it can witness the nonconvexity of certain restricted-dimensional quantum correlations.

Quantum cascade light emitting diodes based on type-2 quantum wells

NASA Technical Reports Server (NTRS)

Lin, C. H.; Yang, R. Q.; Zhang, D.; Murry, S. J.; Pei, S. S.; Allerman, A. A.; Kurtz, S. R.

1997-01-01

The authors have demonstrated room-temperature CW operation of type-2 quantum cascade (QC) light emitting diodes at 4.2 (micro)m using InAs/InGaSb/InAlSb type-2 quantum wells. The type-2 QC configuration utilizes sequential multiple photon emissions in a staircase of coupled type-2 quantum wells. The device was grown by molecular beam epitaxy on a p-type GaSb substrate and was compared of 20 periods of active regions separated by digitally graded quantum well injection regions. The maximum average output power is about 250 (micro)W at 80 K, and 140 (micro)W at 300 K at a repetition rate of 1 kHz with a duty cycle of 50%.

Superposing pure quantum states with partial prior information

NASA Astrophysics Data System (ADS)

Dogra, Shruti; Thomas, George; Ghosh, Sibasish; Suter, Dieter

2018-05-01

The principle of superposition is an intriguing feature of quantum mechanics, which is regularly exploited in many different circumstances. A recent work [M. Oszmaniec et al., Phys. Rev. Lett. 116, 110403 (2016), 10.1103/PhysRevLett.116.110403] shows that the fundamentals of quantum mechanics restrict the process of superimposing two unknown pure states, even though it is possible to superimpose two quantum states with partial prior knowledge. The prior knowledge imposes geometrical constraints on the choice of input states. We discuss an experimentally feasible protocol to superimpose multiple pure states of a d -dimensional quantum system and carry out an explicit experimental realization for two single-qubit pure states with partial prior information on a two-qubit NMR quantum information processor.

Quantum molecular dynamics and multistep-direct analyses of multiple preequilibrium emission

NASA Astrophysics Data System (ADS)

Chadwick, M. B.; Chiba, S.; Niita, K.; Maruyama, T.; Iwamoto, A.

1995-11-01

We study multiple preequilibrium emission in nucleon induced reactions at intermediate energies, and compare quantum molecular dynamics (QMD) calculations with multistep-direct Feshbach-Kerman-Koonin results [M. B. Chadwick, P. G. Young, D. C. George, and Y. Watanabe, Phys. Rev. C 50, 996 (1994)]. When the theoretical expressions of this reference are reformulated so that the definitions of primary and multiple emission correspond to those used in QMD, the two theories yield similar results for primary and multiple preequilibrium emission. We use QMD as a tool to determine the multiplicities of fast preequilibrium nucleons as a function of incident energy. For fast particle cross sections to exceed 5% of the inclusive preequilibrium emission cross sections we find that two particles should be included in reactions above 50 MeV, three above about 180 MeV, and four are only needed when the incident energy exceeds about 400 MeV.

An Integrated Development Environment for Adiabatic Quantum Programming

DOE Office of Scientific and Technical Information (OSTI.GOV)

Humble, Travis S; McCaskey, Alex; Bennink, Ryan S

2014-01-01

Adiabatic quantum computing is a promising route to the computational power afforded by quantum information processing. The recent availability of adiabatic hardware raises the question of how well quantum programs perform. Benchmarking behavior is challenging since the multiple steps to synthesize an adiabatic quantum program are highly tunable. We present an adiabatic quantum programming environment called JADE that provides control over all the steps taken during program development. JADE captures the workflow needed to rigorously benchmark performance while also allowing a variety of problem types, programming techniques, and processor configurations. We have also integrated JADE with a quantum simulation enginemore » that enables program profiling using numerical calculation. The computational engine supports plug-ins for simulation methodologies tailored to various metrics and computing resources. We present the design, integration, and deployment of JADE and discuss its use for benchmarking adiabatic quantum programs.« less

Quantum Secure Group Communication.

PubMed

Li, Zheng-Hong; Zubairy, M Suhail; Al-Amri, M

2018-03-01

We propose a quantum secure group communication protocol for the purpose of sharing the same message among multiple authorized users. Our protocol can remove the need for key management that is needed for the quantum network built on quantum key distribution. Comparing with the secure quantum network based on BB84, we show our protocol is more efficient and securer. Particularly, in the security analysis, we introduce a new way of attack, i.e., the counterfactual quantum attack, which can steal information by "invisible" photons. This invisible photon can reveal a single-photon detector in the photon path without triggering the detector. Moreover, the photon can identify phase operations applied to itself, thereby stealing information. To defeat this counterfactual quantum attack, we propose a quantum multi-user authorization system. It allows us to precisely control the communication time so that the attack can not be completed in time.

[Imaging of surface cell antigens on the tumor sections of lymph nodes using fluorescence quantum dots].

PubMed

Rafalovskaia-Orlovskaia, E P; Gorgidze, L A; Gladkikh, A A; Tauger, S M; Vorob'ev, I A

2012-01-01

The usefulness of quantum dots for the immunofluorescent detection of surface antigens on the lymphoid cells has been studied. To optimize quantum dots detection we have upgraded fluorescent microscope that allows obtaining multiple images from different quantum dots from one section. Specimens stained with quantum dots remained stable over two weeks and practically did not bleach under mercury lamp illumination during tens of minutes. Direct conjugates of primary mouse monoclonal antibodies with quantum dots demonstrated high specificity and sufficient sensitivity in the case of double staining on the frozen sections. Because of the high stability of quantum dots' fluorescence, this method allows to analyze antigen coexpression on the lymphoid tissue sections for diagnostic purposes. The spillover of fluorescent signals from quantum dots into adjacent fluorescent channels, with maxima differing by 40 nm, did not exceed 8%, which makes the spectral compensation is practically unnecessary.

High-fidelity quantum gates on quantum-dot-confined electron spins in low-Q optical microcavities

NASA Astrophysics Data System (ADS)

Li, Tao; Gao, Jian-Cun; Deng, Fu-Guo; Long, Gui-Lu

2018-04-01

We propose some high-fidelity quantum circuits for quantum computing on electron spins of quantum dots (QD) embedded in low-Q optical microcavities, including the two-qubit controlled-NOT gate and the multiple-target-qubit controlled-NOT gate. The fidelities of both quantum gates can, in principle, be robust to imperfections involved in a practical input-output process of a single photon by converting the infidelity into a heralded error. Furthermore, the influence of two different decay channels is detailed. By decreasing the quality factor of the present microcavity, we can largely increase the efficiencies of these quantum gates while their high fidelities remain unaffected. This proposal also has another advantage regarding its experimental feasibility, in that both quantum gates can work faithfully even when the QD-cavity systems are non-identical, which is of particular importance in current semiconductor QD technology.

Manipulation of nanoscale V-pits to optimize internal quantum efficiency of InGaN multiple quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, Chiao-Yun; Li, Heng; Shih, Yang-Ta

2015-03-02

We systematically investigated the influence of nanoscale V-pits on the internal quantum efficiency (IQE) of InGaN multiple quantum wells (MQWs) by adjusting the underlying superlattices (SLS). The analysis indicated that high barrier energy of sidewall MQWs on V-pits and long diffusion distance between the threading dislocation (TD) center and V-pit boundary were crucial to effectively passivate the non-radiative centers of TDs. For a larger V-pit, the thicker sidewall MQW on V-pit would decrease the barrier energy. On the contrary, a shorter distance between the TD center and V-pit boundary would be observed in a smaller V-pit, which could increase themore » carrier capturing capability of TDs. An optimized V-pit size of approximately 200–250 nm in our experiment could be concluded for MQWs with 15 pairs SLS, which exhibited an IQE value of 70%.« less

Redshift and blueshift of GaNAs/GaAs multiple quantum wells induced by rapid thermal annealing

NASA Astrophysics Data System (ADS)

Sun, Yijun; Cheng, Zhiyuan; Zhou, Qiang; Sun, Ying; Sun, Jiabao; Liu, Yanhua; Wang, Meifang; Cao, Zhen; Ye, Zhi; Xu, Mingsheng; Ding, Yong; Chen, Peng; Heuken, Michael; Egawa, Takashi

2018-02-01

The effects of rapid thermal annealing (RTA) on the optical properties of GaNAs/GaAs multiple quantum wells (MQWs) grown by chemical beam epitaxy (CBE) are studied by photoluminescence (PL) at 77 K. The results show that the optical quality of the MQWs improves significantly after RTA. With increasing RTA temperature, PL peak energy of the MQWs redshifts below 1023 K, while it blueshifts above 1023 K. Two competitive processes which occur simultaneously during RTA result in redshift at low temperature and blueshift at high temperature. It is also found that PL peak energy shift can be explained neither by nitrogen diffusion out of quantum wells nor by nitrogen reorganization inside quantum wells. PL peak energy shift can be quantitatively explained by a modified recombination coupling model in which redshift nonradiative recombination and blueshift nonradiative recombination coexist. The results obtained have significant implication on the growth and RTA of GaNAs material for high performance optoelectronic device application.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yamashita, G.; Nagai, M., E-mail: mnagai@mp.es.osaka-u.ac.jp, E-mail: ashida@mp.es.osaka-u.ac.jp; Ashida, M., E-mail: mnagai@mp.es.osaka-u.ac.jp, E-mail: ashida@mp.es.osaka-u.ac.jp

We estimated the carrier multiplication efficiency in the most common solar-cell material, Si, by using optical-pump/terahertz-probe spectroscopy. Through close analysis of time-resolved data, we extracted the exact number of photoexcited carriers from the sheet carrier density 10 ps after photoexcitation, excluding the influences of spatial diffusion and surface recombination in the time domain. For incident photon energies greater than 4.0 eV, we observed enhanced internal quantum efficiency due to carrier multiplication. The evaluated value of internal quantum efficiency agrees well with the results of photocurrent measurements. This optical method allows us to estimate the carrier multiplication and surface recombination of carriersmore » quantitatively, which are crucial for the design of the solar cells.« less

Efficient quantum computing using coherent photon conversion.

PubMed

Langford, N K; Ramelow, S; Prevedel, R; Munro, W J; Milburn, G J; Zeilinger, A

2011-10-12

Single photons are excellent quantum information carriers: they were used in the earliest demonstrations of entanglement and in the production of the highest-quality entanglement reported so far. However, current schemes for preparing, processing and measuring them are inefficient. For example, down-conversion provides heralded, but randomly timed, single photons, and linear optics gates are inherently probabilistic. Here we introduce a deterministic process--coherent photon conversion (CPC)--that provides a new way to generate and process complex, multiquanta states for photonic quantum information applications. The technique uses classically pumped nonlinearities to induce coherent oscillations between orthogonal states of multiple quantum excitations. One example of CPC, based on a pumped four-wave-mixing interaction, is shown to yield a single, versatile process that provides a full set of photonic quantum processing tools. This set satisfies the DiVincenzo criteria for a scalable quantum computing architecture, including deterministic multiqubit entanglement gates (based on a novel form of photon-photon interaction), high-quality heralded single- and multiphoton states free from higher-order imperfections, and robust, high-efficiency detection. It can also be used to produce heralded multiphoton entanglement, create optically switchable quantum circuits and implement an improved form of down-conversion with reduced higher-order effects. Such tools are valuable building blocks for many quantum-enabled technologies. Finally, using photonic crystal fibres we experimentally demonstrate quantum correlations arising from a four-colour nonlinear process suitable for CPC and use these measurements to study the feasibility of reaching the deterministic regime with current technology. Our scheme, which is based on interacting bosonic fields, is not restricted to optical systems but could also be implemented in optomechanical, electromechanical and superconducting systems with extremely strong intrinsic nonlinearities. Furthermore, exploiting higher-order nonlinearities with multiple pump fields yields a mechanism for multiparty mediation of the complex, coherent dynamics.

Robust Multiple-Range Coherent Quantum State Transfer

PubMed Central

Chen, Bing; Peng, Yan-Dong; Li, Yong; Qian, Xiao-Feng

2016-01-01

We propose a multiple-range quantum communication channel to realize coherent two-way quantum state transport with high fidelity. In our scheme, an information carrier (a qubit) and its remote partner are both adiabatically coupled to the same data bus, i.e., an N-site tight-binding chain that has a single defect at the center. At the weak interaction regime, our system is effectively equivalent to a three level system of which a coherent superposition of the two carrier states constitutes a dark state. The adiabatic coupling allows a well controllable information exchange timing via the dark state between the two carriers. Numerical results show that our scheme is robust and efficient under practically inevitable perturbative defects of the data bus as well as environmental dephasing noise. PMID:27364891

Optical properties and carrier dynamics of GaAs/GaInAs multiple-quantum-well shell grown on GaAs nanowire by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Kwangwook; Ravindran, Sooraj; Ju, Gun Wu

GaAs/GaInAs multiple-quantum-well (MQW) shells having different GaInAs shell width formed on the surface of self-catalyzed GaAs core nanowires (NWs) are grown on (100) Si substrate using molecular beam epitaxy. The photoluminescence emission from GaAs/GaInAs MQW shells and the carrier lifetime could be varied by changing the width of GaInAs shell. Time-resolved photoluminescence measurements showed that the carrier lifetime had a fast and slow decay owing to the mixing of wurtzite and zinc-blende structures of the NWs. Furthermore, strain relaxation caused the carrier lifetime to decrease beyond a certain thickness of GaInAs quantum well shells.

Protected Quantum Computation with Multiple Resonators in Ultrastrong Coupling Circuit QED

NASA Astrophysics Data System (ADS)

Nataf, Pierre; Ciuti, Cristiano

2011-11-01

We investigate theoretically the dynamical behavior of a qubit obtained with the two ground eigenstates of an ultrastrong coupling circuit-QED system consisting of a finite number of Josephson fluxonium atoms inductively coupled to a transmission line resonator. We show a universal set of quantum gates by using multiple transmission line resonators (each resonator represents a single qubit). We discuss the intrinsic “anisotropic” nature of noise sources for fluxonium artificial atoms. Through a master equation treatment with colored noise and many-level dynamics, we prove that, for a general class of anisotropic noise sources, the coherence time of the qubit and the fidelity of the quantum operations can be dramatically improved in an optimal regime of ultrastrong coupling, where the ground state is an entangled photonic “cat” state.

Entanglement of spin waves among four quantum memories.

PubMed

Choi, K S; Goban, A; Papp, S B; van Enk, S J; Kimble, H J

2010-11-18

Quantum networks are composed of quantum nodes that interact coherently through quantum channels, and open a broad frontier of scientific opportunities. For example, a quantum network can serve as a 'web' for connecting quantum processors for computation and communication, or as a 'simulator' allowing investigations of quantum critical phenomena arising from interactions among the nodes mediated by the channels. The physical realization of quantum networks generically requires dynamical systems capable of generating and storing entangled states among multiple quantum memories, and efficiently transferring stored entanglement into quantum channels for distribution across the network. Although such capabilities have been demonstrated for diverse bipartite systems, entangled states have not been achieved for interconnects capable of 'mapping' multipartite entanglement stored in quantum memories to quantum channels. Here we demonstrate measurement-induced entanglement stored in four atomic memories; user-controlled, coherent transfer of the atomic entanglement to four photonic channels; and characterization of the full quadripartite entanglement using quantum uncertainty relations. Our work therefore constitutes an advance in the distribution of multipartite entanglement across quantum networks. We also show that our entanglement verification method is suitable for studying the entanglement order of condensed-matter systems in thermal equilibrium.

CUGatesDensity—Quantum circuit analyser extended to density matrices

NASA Astrophysics Data System (ADS)

Loke, T.; Wang, J. B.

2013-12-01

CUGatesDensity is an extension of the original quantum circuit analyser CUGates (Loke and Wang, 2011) [7] to provide explicit support for the use of density matrices. The new package enables simulation of quantum circuits involving statistical ensemble of mixed quantum states. Such analysis is of vital importance in dealing with quantum decoherence, measurements, noise and error correction, and fault tolerant computation. Several examples involving mixed state quantum computation are presented to illustrate the use of this package. Catalogue identifier: AEPY_v1_0 Program summary URL:http://cpc.cs.qub.ac.uk/summaries/AEPY_v1_0.html Program obtainable from: CPC Program Library, Queen’s University, Belfast, N. Ireland Licensing provisions: Standard CPC licence, http://cpc.cs.qub.ac.uk/licence/licence.html No. of lines in distributed program, including test data, etc.: 5368 No. of bytes in distributed program, including test data, etc.: 143994 Distribution format: tar.gz Programming language: Mathematica. Computer: Any computer installed with a copy of Mathematica 6.0 or higher. Operating system: Any system with a copy of Mathematica 6.0 or higher installed. Classification: 4.15. Nature of problem: To simulate arbitrarily complex quantum circuits comprised of single/multiple qubit and qudit quantum gates with mixed state registers. Solution method: A density matrix representation for mixed states and a state vector representation for pure states are used. The construct is based on an irreducible form of matrix decomposition, which allows a highly efficient implementation of general controlled gates with multiple conditionals. Running time: The examples provided in the notebook CUGatesDensity.nb take approximately 30 s to run on a laptop PC.

Quantum origin of quantum jumps: Breaking of unitary symmetry induced by information transfer in the transition from quantum to classical

NASA Astrophysics Data System (ADS)

Zurek, Wojciech Hubert

2007-11-01

Measurements transfer information about a system to the apparatus and then, further on, to observers and (often inadvertently) to the environment. I show that even imperfect copying essential in such situations restricts possible unperturbed outcomes to an orthogonal subset of all possible states of the system, thus breaking the unitary symmetry of its Hilbert space implied by the quantum superposition principle. Preferred outcome states emerge as a result. They provide a framework for “wave-packet collapse,” designating terminal points of quantum jumps and defining the measured observable by specifying its eigenstates. In quantum Darwinism, they are the progenitors of multiple copies spread throughout the environment—the fittest quantum states that not only survive decoherence, but subvert the environment into carrying information about them—into becoming a witness.

Quantum engineering. Confining the state of light to a quantum manifold by engineered two-photon loss.

PubMed

Leghtas, Z; Touzard, S; Pop, I M; Kou, A; Vlastakis, B; Petrenko, A; Sliwa, K M; Narla, A; Shankar, S; Hatridge, M J; Reagor, M; Frunzio, L; Schoelkopf, R J; Mirrahimi, M; Devoret, M H

2015-02-20

Physical systems usually exhibit quantum behavior, such as superpositions and entanglement, only when they are sufficiently decoupled from a lossy environment. Paradoxically, a specially engineered interaction with the environment can become a resource for the generation and protection of quantum states. This notion can be generalized to the confinement of a system into a manifold of quantum states, consisting of all coherent superpositions of multiple stable steady states. We have confined the state of a superconducting resonator to the quantum manifold spanned by two coherent states of opposite phases and have observed a Schrödinger cat state spontaneously squeeze out of vacuum before decaying into a classical mixture. This experiment points toward robustly encoding quantum information in multidimensional steady-state manifolds. Copyright © 2015, American Association for the Advancement of Science.

A review on quantum search algorithms

NASA Astrophysics Data System (ADS)

Giri, Pulak Ranjan; Korepin, Vladimir E.

2017-12-01

The use of superposition of states in quantum computation, known as quantum parallelism, has significant advantage in terms of speed over the classical computation. It is evident from the early invented quantum algorithms such as Deutsch's algorithm, Deutsch-Jozsa algorithm and its variation as Bernstein-Vazirani algorithm, Simon algorithm, Shor's algorithms, etc. Quantum parallelism also significantly speeds up the database search algorithm, which is important in computer science because it comes as a subroutine in many important algorithms. Quantum database search of Grover achieves the task of finding the target element in an unsorted database in a time quadratically faster than the classical computer. We review Grover's quantum search algorithms for a singe and multiple target elements in a database. The partial search algorithm of Grover and Radhakrishnan and its optimization by Korepin called GRK algorithm are also discussed.

Genuine Quantum Signatures in Synchronization of Anharmonic Self-Oscillators.

PubMed

Lörch, Niels; Amitai, Ehud; Nunnenkamp, Andreas; Bruder, Christoph

2016-08-12

We study the synchronization of a Van der Pol self-oscillator with Kerr anharmonicity to an external drive. We demonstrate that the anharmonic, discrete energy spectrum of the quantum oscillator leads to multiple resonances in both phase locking and frequency entrainment not present in the corresponding classical system. Strong driving close to these resonances leads to nonclassical steady-state Wigner distributions. Experimental realizations of these genuine quantum signatures can be implemented with current technology.

Nanometric summation architecture based on optical near-field interaction between quantum dots.

PubMed

Naruse, Makoto; Miyazaki, Tetsuya; Kubota, Fumito; Kawazoe, Tadashi; Kobayashi, Kiyoshi; Sangu, Suguru; Ohtsu, Motoichi

2005-01-15

A nanoscale data summation architecture is proposed and experimentally demonstrated based on the optical near-field interaction between quantum dots. Based on local electromagnetic interactions between a few nanometric elements via optical near fields, we can combine multiple excitations at a certain quantum dot, which allows construction of a summation architecture. Summation plays a key role for content-addressable memory, which is one of the most important functions in optical networks.

Imagery, intuition and imagination in quantum physics education

NASA Astrophysics Data System (ADS)

Stapleton, Andrew J.

2018-03-01

In response to the authors, I demonstrate how threshold concepts offer a means to both contextualise teaching and learning of quantum physics and help transform students into the culture of physics, and as a way to identify particularly troublesome concepts within quantum physics. By drawing parallels from my own doctoral research in another area of contemporary physics—special relativity—I highlight concepts that require an ontological change, namely a shift beyond the reality of everyday Newtonian experience such as time dilation and length contraction, as being troublesome concepts that can present barriers to learning with students often asking "is it real?". Similarly, the domain of quantum physics requires students to move beyond "common sense" perception as it brings into sharp focus the difference between what is experienced via the sense perceptions and the mental abstraction of phenomena. And it's this issue that highlights the important role imagery and creativity have both in quantum physics and in the evolution of physics more generally, and lies in stark contrast to the apparent mathematical focus and lack of opportunity for students to explore ontological issues evident in the authors' research. By reflecting on the authors' observations of a focus on mathematical formalisms and problem solving at the expense of alternative approaches, I explore the dialectic between Heisenberg's highly mathematical approach and Schrödinger's mechanical wave view of the atom, together with its conceptual imagery, at the heart of the evolution of quantum mechanics. In turn, I highlight the significance of imagery, imagination and intuition in quantum physics, together with the importance of adopting an epistemological pluralism—multiple ways of knowing and thinking—in physics education. Again drawing parallels with the authors' work and my own, I identify the role thought experiments have in both quantum physics education and in physics more generally. By introducing the notion of play, I advocate adopting and celebrating multiple approaches of teaching and learning, including thought experiments, play, dialogue and a more conceptual approach inclusive of multiple forms of representation, that complements the current instructional, mathematical approach so as to provide better balance to learning, teaching and the curriculum.

X-ray imaging using avalanche multiplication in amorphous selenium: investigation of intrinsic avalanche noise.

PubMed

Hunt, D C; Tanioka, Kenkichi; Rowlands, J A

2007-12-01

The flat-panel detector (FPD) is the state-of-the-art detector for digital radiography. The FPD can acquire images in real-time, has superior spatial resolution, and is free of the problems of x-ray image intensifiers-veiling glare, pin-cushion and magnetic distortion. However, FPDs suffer from poor signal to noise ratio performance at typical fluoroscopic exposure rates where the quantum noise is reduced to the point that it becomes comparable to the fixed electronic noise. It has been shown previously that avalanche multiplication gain in amorphous selenium (a-Se) can provide the necessary amplification to overcome the electronic noise of the FPD. Avalanche multiplication, however, comes with its own intrinsic contribution to the noise in the form of gain fluctuation noise. In this article a cascaded systems analysis is used to present a modified metric related to the detective quantum efficiency. The modified metric is used to study a diagnostic x-ray imaging system in the presence of intrinsic avalanche multiplication noise independently from other noise sources, such as electronic noise. An indirect conversion imaging system is considered to make the study independent of other avalanche multiplication related noise sources, such as the fluctuations arising from the depth of x-ray absorption. In this case all the avalanche events are initiated at the surface of the avalanche layer, and there are no fluctuations in the depth of absorption. Experiments on an indirect conversion x-ray imaging system using avalanche multiplication in a layer of a-Se are also presented. The cascaded systems analysis shows that intrinsic noise of avalanche multiplication will not have any deleterious influence on detector performance at zero spatial frequency in x-ray imaging provided the product of conversion gain, coupling efficiency, and optical quantum efficiency are much greater than a factor of 2. The experimental results show that avalanche multiplication in a-Se behaves as an intrinsic noise free avalanche multiplication, in accordance with our theory. Provided good coupling efficiency and high optical quantum efficiency are maintained, avalanche multiplication in a-Se has the potential to increase the gain and make negligible contribution to the noise, thereby improving the performance of indirect FPDs in fluoroscopy.

X-ray imaging using avalanche multiplication in amorphous selenium: Investigation of intrinsic avalanche noise

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hunt, D. C.; Tanioka, Kenkichi; Rowlands, J. A.

2007-12-15

The flat-panel detector (FPD) is the state-of-the-art detector for digital radiography. The FPD can acquire images in real-time, has superior spatial resolution, and is free of the problems of x-ray image intensifiers--veiling glare, pin-cushion and magnetic distortion. However, FPDs suffer from poor signal to noise ratio performance at typical fluoroscopic exposure rates where the quantum noise is reduced to the point that it becomes comparable to the fixed electronic noise. It has been shown previously that avalanche multiplication gain in amorphous selenium (a-Se) can provide the necessary amplification to overcome the electronic noise of the FPD. Avalanche multiplication, however, comesmore » with its own intrinsic contribution to the noise in the form of gain fluctuation noise. In this article a cascaded systems analysis is used to present a modified metric related to the detective quantum efficiency. The modified metric is used to study a diagnostic x-ray imaging system in the presence of intrinsic avalanche multiplication noise independently from other noise sources, such as electronic noise. An indirect conversion imaging system is considered to make the study independent of other avalanche multiplication related noise sources, such as the fluctuations arising from the depth of x-ray absorption. In this case all the avalanche events are initiated at the surface of the avalanche layer, and there are no fluctuations in the depth of absorption. Experiments on an indirect conversion x-ray imaging system using avalanche multiplication in a layer of a-Se are also presented. The cascaded systems analysis shows that intrinsic noise of avalanche multiplication will not have any deleterious influence on detector performance at zero spatial frequency in x-ray imaging provided the product of conversion gain, coupling efficiency, and optical quantum efficiency are much greater than a factor of 2. The experimental results show that avalanche multiplication in a-Se behaves as an intrinsic noise free avalanche multiplication, in accordance with our theory. Provided good coupling efficiency and high optical quantum efficiency are maintained, avalanche multiplication in a-Se has the potential to increase the gain and make negligible contribution to the noise, thereby improving the performance of indirect FPDs in fluoroscopy.« less

Two-walker discrete-time quantum walks on the line with percolation

NASA Astrophysics Data System (ADS)

Rigovacca, L.; di Franco, C.

2016-02-01

One goal in the quantum-walk research is the exploitation of the intrinsic quantum nature of multiple walkers, in order to achieve the full computational power of the model. Here we study the behaviour of two non-interacting particles performing a quantum walk on the line when the possibility of lattice imperfections, in the form of missing links, is considered. We investigate two regimes, statical and dynamical percolation, that correspond to different time scales for the imperfections evolution with respect to the quantum-walk one. By studying the qualitative behaviour of three two-particle quantities for different probabilities of having missing bonds, we argue that the chosen symmetry under particle-exchange of the input state strongly affects the output of the walk, even in noisy and highly non-ideal regimes. We provide evidence against the possibility of gathering information about the walkers indistinguishability from the observation of bunching phenomena in the output distribution, in all those situations that require a comparison between averaged quantities. Although the spread of the walk is not substantially changed by the addition of a second particle, we show that the presence of multiple walkers can be beneficial for a procedure to estimate the probability of having a broken link.

On the Making of Quantum Chemistry in Germany

NASA Astrophysics Data System (ADS)

Karachalios, Andreas

During the 1990s several historians of science have studied the emergence of quantum chemistry as an autonomous discipline in different national contexts (Nye, 1993; Simões, 1993; Simões, forthcoming; Gavroglu and Simões, 1994; Karachalios, 1997a). Beyond these disciplinary studies, a number of contributions to special aspects of this theme have appeared (Schweber, 1990; Gavroglu, 1995; Simões and Gavroglu, 1997, 1999a,b; Schwarz et al., 1999). In this literature the birth of quantum chemistry has generally been associated with two dates: the 1927 paper of Walter Heitler and Fritz London and the year 1931 in which Linus Pauling and John Clarke Slater independently explained the tetrahedral orientation of the four bonds of the carbon atom. To these dates we might also add a third: in 1928 London published a paper, 'Zur Quantentheorie der homöopolaren Valenzzahlen' (London, 1928), in which he gave a quantum mechanical explanation of the classical chemical notion of valency. There he showed a relationship between the valency numbers and the spectroscopical multiplicity, namely that valency=multiplicity-1. This relation established a bridge between physical and chemical facts. Taken together, these developments constitute important events for the international development of quantum chemistry.

Unified quantum no-go theorems and transforming of quantum pure states in a restricted set

NASA Astrophysics Data System (ADS)

Luo, Ming-Xing; Li, Hui-Ran; Lai, Hong; Wang, Xiaojun

2017-12-01

The linear superposition principle in quantum mechanics is essential for several no-go theorems such as the no-cloning theorem, the no-deleting theorem and the no-superposing theorem. In this paper, we investigate general quantum transformations forbidden or permitted by the superposition principle for various goals. First, we prove a no-encoding theorem that forbids linearly superposing of an unknown pure state and a fixed pure state in Hilbert space of a finite dimension. The new theorem is further extended for multiple copies of an unknown state as input states. These generalized results of the no-encoding theorem include the no-cloning theorem, the no-deleting theorem and the no-superposing theorem as special cases. Second, we provide a unified scheme for presenting perfect and imperfect quantum tasks (cloning and deleting) in a one-shot manner. This scheme may lead to fruitful results that are completely characterized with the linear independence of the representative vectors of input pure states. The upper bounds of the efficiency are also proved. Third, we generalize a recent superposing scheme of unknown states with a fixed overlap into new schemes when multiple copies of an unknown state are as input states.

Highly efficient organic light-emitting diodes with a quantum dot interfacial layer.

PubMed

Ryu, Seung Yoon; Hwang, Byoung Har; Park, Ki Wan; Hwang, Hyeon Seok; Sung, Jin Woo; Baik, Hong Koo; Lee, Chang Ho; Song, Seung Yong; Lee, Jun Yeob

2009-02-11

Advanced organic light-emitting diodes (OLEDs), based on a multiple structure, were achieved in combination with a quantum dot (QD) interfacial layer. The authors used core/shell CdSe/ZnS QDs passivated with trioctylphosphine oxide (TOPO) and TOPO-free QDs as interlayers. Multiple-structure OLEDs (MOLEDs) with TOPO-free QDs showed higher device efficiency because of a well-defined interfacial monolayer formation. Additionally, the three-unit MOLED showed high performance for device efficiency with double-structured QD interfacial layers due to the enhanced charge balance and recombination probability.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Damtie, Fikeraddis A., E-mail: Fikeraddis.Damtie@teorfys.lu.se; Wacker, Andreas, E-mail: Andreas.Wacker@fysik.lu.se; Karki, Khadga J., E-mail: Khadga.Karki@chemphys.lu.se

Multiple exciton generation (MEG) is a process in which more than one electron hole pair is generated per absorbed photon. It allows us to increase the efficiency of solar energy harvesting. Experimental studies have shown the multiple exciton generation yield of 1.2 in isolated colloidal quantum dots. However real photoelectric devices require the extraction of electron hole pairs to electric contacts. We provide a systematic study of the corresponding quantum coherent processes including extraction and injection and show that a proper design of extraction and injection rates enhances the yield significantly up to values around 1.6.

Reducing Mg Acceptor Activation-Energy in Al0.83Ga0.17N Disorder Alloy Substituted by Nanoscale (AlN)5/(GaN)1 Superlattice Using MgGa δ-Doping: Mg Local-Structure Effect

PubMed Central

Zhong, Hong-xia; Shi, Jun-jie; Zhang, Min; Jiang, Xin-he; Huang, Pu; Ding, Yi-min

2014-01-01

Improving p-type doping efficiency in Al-rich AlGaN alloys is a worldwide problem for the realization of AlGaN-based deep ultraviolet optoelectronic devices. In order to solve this problem, we calculate Mg acceptor activation energy and investigate its relationship with Mg local structure in nanoscale (AlN)5/(GaN)1 superlattice (SL), a substitution for Al0.83Ga0.17N disorder alloy, using first-principles calculations. A universal picture to reduce acceptor activation energy in wide-gap semiconductors is given for the first time. By reducing the volume of the acceptor local structure slightly, its activation energy can be decreased remarkably. Our results show that Mg acceptor activation energy can be reduced significantly from 0.44 eV in Al0.83Ga0.17N disorder alloy to 0.26 eV, very close to the Mg acceptor activation energy in GaN, and a high hole concentration in the order of 1019 cm−3 can be obtained in (AlN)5/(GaN)1 SL by MgGa δ-doping owing to GaN-monolayer modulation. We thus open up a new way to reduce Mg acceptor activation energy and increase hole concentration in Al-rich AlGaN. PMID:25338639

High-Performance Schottky Diode Gas Sensor Based on the Heterojunction of Three-Dimensional Nanohybrids of Reduced Graphene Oxide-Vertical ZnO Nanorods on an AlGaN/GaN Layer.

PubMed

Minh Triet, Nguyen; Thai Duy, Le; Hwang, Byeong-Ung; Hanif, Adeela; Siddiqui, Saqib; Park, Kyung-Ho; Cho, Chu-Young; Lee, Nae-Eung

2017-09-13

A Schottky diode based on a heterojunction of three-dimensional (3D) nanohybrid materials, formed by hybridizing reduced graphene oxide (RGO) with epitaxial vertical zinc oxide nanorods (ZnO NRs) and Al 0.27 GaN 0.73 (∼25 nm)/GaN is presented as a new class of high-performance chemical sensors. The RGO nanosheet layer coated on the ZnO NRs enables the formation of a direct Schottky contact with the AlGaN layer. The sensing results of the Schottky diode with respect to NO 2 , SO 2 , and HCHO gases exhibit high sensitivity (0.88-1.88 ppm -1 ), fast response (∼2 min), and good reproducibility down to 120 ppb concentration levels at room temperature. The sensing mechanism of the Schottky diode can be explained by the effective modulation of the reverse saturation current due to the change in thermionic emission carrier transport caused by ultrasensitive changes in the Schottky barrier of a van der Waals heterostructure between RGO and AlGaN layers upon interaction with gas molecules. Advances in the design of a Schottky diode gas sensor based on the heterojunction of high-mobility two-dimensional electron gas channel and highly responsive 3D-engineered sensing nanomaterials have potential not only for the enhancement of sensitivity and selectivity but also for improving operation capability at room temperature.

Characterization of bulk traps and interface states in AlGaN/GaN heterostructure under proton irradiation

NASA Astrophysics Data System (ADS)

Zheng, Xue-Feng; Dong, Shuai-Shuai; Ji, Peng; Wang, Chong; He, Yun-Long; Lv, Ling; Ma, Xiao-Hua; Hao, Yue

2018-06-01

This paper provides a systematic study on the bulk traps and interface states in a typical AlGaN/GaN Schottky structure under proton irradiation. After 3 MeV proton irradiation with a dose of 5 × 1014 H+/cm2, a positive flat band voltage shift of 0.3 V is observed according to the capacitance-voltage (C-V) measurements. Based on this, the distribution of electrons across AlGaN and GaN layers is extracted. Associated with the numerical calculation, direct experimental evidences demonstrate that the bulk traps within the AlGaN layer dominate the carrier removal effect under proton irradiation. Furthermore, the effects of proton irradiation on AlGaN/GaN interface states were investigated by utilizing the frequency dependent conductance technique. The time constants are extracted, which increase from 1.10-2.53 μs to 3.46-37 μs after irradiation. Meanwhile, it shows that the density of interface states increases from 9.45 × 1011-1.70 × 1013 cm-2.eV-1 to 1.8 × 1012-1.8 × 1013 cm-2.eV-1 with an increase in trap activation energy from 0.34 eV-0.32 eV to 0.41 eV-0.35 eV after irradiation. The Coulomb scattering effect of electron trapping at interface states with deeper energy levels is utilized to explain the mobility degradation in this paper.

Hybrid quantum-classical modeling of quantum dot devices

NASA Astrophysics Data System (ADS)

Kantner, Markus; Mittnenzweig, Markus; Koprucki, Thomas

2017-11-01

The design of electrically driven quantum dot devices for quantum optical applications asks for modeling approaches combining classical device physics with quantum mechanics. We connect the well-established fields of semiclassical semiconductor transport theory and the theory of open quantum systems to meet this requirement. By coupling the van Roosbroeck system with a quantum master equation in Lindblad form, we introduce a new hybrid quantum-classical modeling approach, which provides a comprehensive description of quantum dot devices on multiple scales: it enables the calculation of quantum optical figures of merit and the spatially resolved simulation of the current flow in realistic semiconductor device geometries in a unified way. We construct the interface between both theories in such a way, that the resulting hybrid system obeys the fundamental axioms of (non)equilibrium thermodynamics. We show that our approach guarantees the conservation of charge, consistency with the thermodynamic equilibrium and the second law of thermodynamics. The feasibility of the approach is demonstrated by numerical simulations of an electrically driven single-photon source based on a single quantum dot in the stationary and transient operation regime.

Silicon CMOS architecture for a spin-based quantum computer.

PubMed

Veldhorst, M; Eenink, H G J; Yang, C H; Dzurak, A S

2017-12-15

Recent advances in quantum error correction codes for fault-tolerant quantum computing and physical realizations of high-fidelity qubits in multiple platforms give promise for the construction of a quantum computer based on millions of interacting qubits. However, the classical-quantum interface remains a nascent field of exploration. Here, we propose an architecture for a silicon-based quantum computer processor based on complementary metal-oxide-semiconductor (CMOS) technology. We show how a transistor-based control circuit together with charge-storage electrodes can be used to operate a dense and scalable two-dimensional qubit system. The qubits are defined by the spin state of a single electron confined in quantum dots, coupled via exchange interactions, controlled using a microwave cavity, and measured via gate-based dispersive readout. We implement a spin qubit surface code, showing the prospects for universal quantum computation. We discuss the challenges and focus areas that need to be addressed, providing a path for large-scale quantum computing.

Multi-functional quantum router using hybrid opto-electromechanics

NASA Astrophysics Data System (ADS)

Ma, Peng-Cheng; Yan, Lei-Lei; Chen, Gui-Bin; Li, Xiao-Wei; Liu, Shu-Jing; Zhan, You-Bang

2018-03-01

Quantum routers engineered with multiple frequency bands play a key role in quantum networks. We propose an experimentally accessible scheme for a multi-functional quantum router, using photon-phonon conversion in a hybrid opto-electromechanical system. Our proposed device functions as a bidirectional, tunable multi-channel quantum router, and demonstrates the possibility to route single optical photons bidirectionally and simultaneously to three different output ports, by adjusting the microwave power. Further, the device also behaves as an interswitching unit for microwave and optical photons, yielding probabilistic routing of microwave (optical) signals to optical (microwave) outports. With respect to potential application, we verify the insignificant influence from vacuum and thermal noises in the performance of the router under cryogenic conditions.

Multi-bit dark state memory: Double quantum dot as an electronic quantum memory

NASA Astrophysics Data System (ADS)

Aharon, Eran; Pozner, Roni; Lifshitz, Efrat; Peskin, Uri

2016-12-01

Quantum dot clusters enable the creation of dark states which preserve electrons or holes in a coherent superposition of dot states for a long time. Various quantum logic devices can be envisioned to arise from the possibility of storing such trapped particles for future release on demand. In this work, we consider a double quantum dot memory device, which enables the preservation of a coherent state to be released as multiple classical bits. Our unique device architecture uses an external gating for storing (writing) the coherent state and for retrieving (reading) the classical bits, in addition to exploiting an internal gating effect for the preservation of the coherent state.

Strategies in a symmetric quantum Kolkata restaurant problem

NASA Astrophysics Data System (ADS)

Sharif, Puya; Heydari, Hoshang

2012-12-01

The Quantum Kolkata restaurant problem is a multiple-choice version of the quantum minority game, where a set of n non-communicating players have to chose between one of m choices. A payoff is granted to the players that make a unique choice. It has previously been shown that shared entanglement and quantum operations can aid the players to coordinate their actions and acquire higher payoffs than is possible with classical randomization. In this paper the initial quantum state is expanded to a family of GHZ-type states and strategies are discussed in terms of possible final outcomes. It is shown that the players individually seek outcomes that maximize the collective good.

The Strange (Hi)story of Particles and Waves

NASA Astrophysics Data System (ADS)

Zeh, H. Dieter

2016-03-01

This is an attempt of a non-technical but conceptually consistent presentation of quantum theory in a historical context. While the first part is written for a general readership, Section 5 may appear a bit provocative to some quantum physicists. I argue that the single-particle wave functions of quantum mechanics have to be correctly interpreted as field modes that are "occupied once" (i.e. first excited states of the corresponding quantum oscillators in the case of boson fields). Multiple excitations lead to apparent many-particle wave functions, while the quantum states proper are defined by wave function(al)s on the "configuration" space of fundamental fields, or on another, as yet elusive, fundamental local basis.

Quantum speedup of Monte Carlo methods.

PubMed

Montanaro, Ashley

2015-09-08

Monte Carlo methods use random sampling to estimate numerical quantities which are hard to compute deterministically. One important example is the use in statistical physics of rapidly mixing Markov chains to approximately compute partition functions. In this work, we describe a quantum algorithm which can accelerate Monte Carlo methods in a very general setting. The algorithm estimates the expected output value of an arbitrary randomized or quantum subroutine with bounded variance, achieving a near-quadratic speedup over the best possible classical algorithm. Combining the algorithm with the use of quantum walks gives a quantum speedup of the fastest known classical algorithms with rigorous performance bounds for computing partition functions, which use multiple-stage Markov chain Monte Carlo techniques. The quantum algorithm can also be used to estimate the total variation distance between probability distributions efficiently.

50-GHz-spaced comb of high-dimensional frequency-bin entangled photons from an on-chip silicon nitride microresonator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Imany, Poolad; Jaramillo-Villegas, Jose A.; Odele, Ogaga D.

Quantum frequency combs from chip-scale integrated sources are promising candidates for scalable and robust quantum information processing (QIP). However, to use these quantum combs for frequency domain QIP, demonstration of entanglement in the frequency basis, showing that the entangled photons are in a coherent superposition of multiple frequency bins, is required. We present a verification of qubit and qutrit frequency-bin entanglement using an on-chip quantum frequency comb with 40 mode pairs, through a two-photon interference measurement that is based on electro-optic phase modulation. Our demonstrations provide an important contribution in establishing integrated optical microresonators as a source for high-dimensional frequency-binmore » encoded quantum computing, as well as dense quantum key distribution.« less

50-GHz-spaced comb of high-dimensional frequency-bin entangled photons from an on-chip silicon nitride microresonator

DOE PAGES

Imany, Poolad; Jaramillo-Villegas, Jose A.; Odele, Ogaga D.; ...

2018-01-18

Quantum frequency combs from chip-scale integrated sources are promising candidates for scalable and robust quantum information processing (QIP). However, to use these quantum combs for frequency domain QIP, demonstration of entanglement in the frequency basis, showing that the entangled photons are in a coherent superposition of multiple frequency bins, is required. We present a verification of qubit and qutrit frequency-bin entanglement using an on-chip quantum frequency comb with 40 mode pairs, through a two-photon interference measurement that is based on electro-optic phase modulation. Our demonstrations provide an important contribution in establishing integrated optical microresonators as a source for high-dimensional frequency-binmore » encoded quantum computing, as well as dense quantum key distribution.« less

Confining the state of light to a quantum manifold by engineered two-photon loss

NASA Astrophysics Data System (ADS)

Leghtas, Z.; Touzard, S.; Pop, I. M.; Kou, A.; Vlastakis, B.; Petrenko, A.; Sliwa, K. M.; Narla, A.; Shankar, S.; Hatridge, M. J.; Reagor, M.; Frunzio, L.; Schoelkopf, R. J.; Mirrahimi, M.; Devoret, M. H.

2015-02-01

Physical systems usually exhibit quantum behavior, such as superpositions and entanglement, only when they are sufficiently decoupled from a lossy environment. Paradoxically, a specially engineered interaction with the environment can become a resource for the generation and protection of quantum states. This notion can be generalized to the confinement of a system into a manifold of quantum states, consisting of all coherent superpositions of multiple stable steady states. We have confined the state of a superconducting resonator to the quantum manifold spanned by two coherent states of opposite phases and have observed a Schrödinger cat state spontaneously squeeze out of vacuum before decaying into a classical mixture. This experiment points toward robustly encoding quantum information in multidimensional steady-state manifolds.

Quantum speedup of Monte Carlo methods

PubMed Central

Montanaro, Ashley

2015-01-01

Monte Carlo methods use random sampling to estimate numerical quantities which are hard to compute deterministically. One important example is the use in statistical physics of rapidly mixing Markov chains to approximately compute partition functions. In this work, we describe a quantum algorithm which can accelerate Monte Carlo methods in a very general setting. The algorithm estimates the expected output value of an arbitrary randomized or quantum subroutine with bounded variance, achieving a near-quadratic speedup over the best possible classical algorithm. Combining the algorithm with the use of quantum walks gives a quantum speedup of the fastest known classical algorithms with rigorous performance bounds for computing partition functions, which use multiple-stage Markov chain Monte Carlo techniques. The quantum algorithm can also be used to estimate the total variation distance between probability distributions efficiently. PMID:26528079

Novel Approaches to Quantum Computation Using Solid State Qubits

DTIC Science & Technology

2007-12-31

hysteretic DC-SQUIDs, Phys. Rev. B 71, 220509(R) (2005). 18. C.-P. Yang and S. Han, Generation of Greenberger-Horne- Zeilinger entangled states with three SQUID...Horne- Zeilinger entangled states with multiple superconducting quantum interference device qubits/atoms in cavity QED, Phys. Rev. A 70, 062323 (2004

Coherent Control of Diamond Defects for Quantum Information Science and Quantum Sensing

DTIC Science & Technology

2014-04-18

beam steering in micromirror systems [192]. Furthermore, by eliminating require- ments for cryogenic temperatures, our blueprint aims to make the...Isenhower, A. T. Gill, F. P. Lu, M. Saffman, and J. Kim. Independent individual addressing of multiple neutral atom qubits with a micromirror -based

Interfacial relaxation analysis of InGaAs/GaAsP strain-compensated multiple quantum wells and its optical property

NASA Astrophysics Data System (ADS)

Dong, Hailiang; Sun, Jing; Ma, Shufang; Liang, Jian; Jia, Zhigang; Liu, Xuguang; Xu, Bingshe

2018-02-01

InGaAs/GaAsP strain-compensated multiple quantum wells were prepared by metal organic chemical vapor deposition on GaAs (100) substrates with misorientation of 15° toward [111]. In order to obtain better strain-compensated abrupt heterojunction interfaces, the compressive strain and relaxation of different quantum well and the total accumulated strain were investigated by adjusting In composition and the thickness of InxGa1-xAs well and GaAs1-yPy barrier keep constant. High resolution X-ray diffraction results indicate the crystal and interfacial structures of In0.18Ga0.82As (7 nm)/GaAs1-yPy with the least relaxation and total strain mismatch are better than others. From in-situ surface reflectivity curves, we observed the slope of reflectivity curve of multiple quantum wells increases with increasing lattice relaxation. Atomic force microscopic results show surface morphologies of three samples are Volmer-Weber mode. Indium segregation at heterointerface between well and barrier were investigated by secondary ion mass spectrometry which indicate indium diffusion width increase with the increasing total strain mismatch. Finally, a shoulder peak was observed from Gaussian fitting of photoluminescence, stemming from the lattice relaxation. These results demonstrate that the relaxation process is introduced and indium segregation length widens as the relaxation increases. The experimental results will be favorable for optimizing the epitaxial growth of InGaAs/GaAsP strain-compensated quantum wells in order to obtain high quality smooth heterointerface.

A Bowtie Antenna Coupled Tunable Photon-Assisted Tunneling Double Quantum Well (DQW) THz Detector

DTIC Science & Technology

2002-01-01

Proc. Vol. 692 © 2002 Materials Research Society H4.2 A Bowtie Antenna Coupled Tunable Photon-Assisted Tunneling Double Quantum Well (DQW) THz Detector ...on photon-assisted tunneling (PAT) between the two electron layers in a double quantum well (DQW) heterostructure, will be explained. The detector is...the frequency and strength of that radiation. The THz detector discussed in this paper makes use of photon- assisted tunnelling (PAT) between multiple

Experimental Demonstration of a Hybrid-Quantum-Emitter Producing Individual Entangled Photon Pairs in the Telecom Band

PubMed Central

Chen, Geng; Zou, Yang; Zhang, Wen-Hao; Zhang, Zi-Huai; Zhou, Zong-Quan; He, De-Yong; Tang, Jian-Shun; Liu, Bi-Heng; Yu, Ying; Zha, Guo-Wei; Ni, Hai-Qiao; Niu, Zhi-Chuan; Han, Yong-Jian; Li, Chuan-Feng; Guo, Guang-Can

2016-01-01

Quantum emitters generating individual entangled photon pairs (IEPP) have significant fundamental advantages over schemes that suffer from multiple photon emission, or schemes that require post-selection techniques or the use of photon-number discriminating detectors. Quantum dots embedded within nanowires (QD-NWs) represent one of the most promising candidate for quantum emitters that provide a high collection efficiency of photons. However, a quantum emitter that generates IEPP in the telecom band is still an issue demanding a prompt solution. Here, we demonstrate in principle that IEPPs in the telecom band can be created by combining a single QD-NW and a nonlinear crystal waveguide. The QD-NW system serves as the single photon source, and the emitted visible single photons are split into IEPPs at approximately 1.55 μm through the process of spontaneous parametric down conversion (SPDC) in a periodically poled lithium niobate (PPLN) waveguide. The compatibility of the QD-PPLN interface is the determinant factor in constructing this novel hybrid-quantum-emitter (HQE). Benefiting from the desirable optical properties of QD-NWs and the extremely high nonlinear conversion efficiency of PPLN waveguides, we successfully generate IEPPs in the telecom band with the polarization degree of freedom. The entanglement of the generated photon pairs is confirmed by the entanglement witness. Our experiment paves the way to producing HQEs inheriting the advantages of multiple systems. PMID:27225881

Experimental Demonstration of a Hybrid-Quantum-Emitter Producing Individual Entangled Photon Pairs in the Telecom Band.

PubMed

Chen, Geng; Zou, Yang; Zhang, Wen-Hao; Zhang, Zi-Huai; Zhou, Zong-Quan; He, De-Yong; Tang, Jian-Shun; Liu, Bi-Heng; Yu, Ying; Zha, Guo-Wei; Ni, Hai-Qiao; Niu, Zhi-Chuan; Han, Yong-Jian; Li, Chuan-Feng; Guo, Guang-Can

2016-05-26

Quantum emitters generating individual entangled photon pairs (IEPP) have significant fundamental advantages over schemes that suffer from multiple photon emission, or schemes that require post-selection techniques or the use of photon-number discriminating detectors. Quantum dots embedded within nanowires (QD-NWs) represent one of the most promising candidate for quantum emitters that provide a high collection efficiency of photons. However, a quantum emitter that generates IEPP in the telecom band is still an issue demanding a prompt solution. Here, we demonstrate in principle that IEPPs in the telecom band can be created by combining a single QD-NW and a nonlinear crystal waveguide. The QD-NW system serves as the single photon source, and the emitted visible single photons are split into IEPPs at approximately 1.55 μm through the process of spontaneous parametric down conversion (SPDC) in a periodically poled lithium niobate (PPLN) waveguide. The compatibility of the QD-PPLN interface is the determinant factor in constructing this novel hybrid-quantum-emitter (HQE). Benefiting from the desirable optical properties of QD-NWs and the extremely high nonlinear conversion efficiency of PPLN waveguides, we successfully generate IEPPs in the telecom band with the polarization degree of freedom. The entanglement of the generated photon pairs is confirmed by the entanglement witness. Our experiment paves the way to producing HQEs inheriting the advantages of multiple systems.

III-V quantum light source and cavity-QED on silicon.

PubMed

Luxmoore, I J; Toro, R; Del Pozo-Zamudio, O; Wasley, N A; Chekhovich, E A; Sanchez, A M; Beanland, R; Fox, A M; Skolnick, M S; Liu, H Y; Tartakovskii, A I

2013-01-01

Non-classical light sources offer a myriad of possibilities in both fundamental science and commercial applications. Single photons are the most robust carriers of quantum information and can be exploited for linear optics quantum information processing. Scale-up requires miniaturisation of the waveguide circuit and multiple single photon sources. Silicon photonics, driven by the incentive of optical interconnects is a highly promising platform for the passive optical components, but integrated light sources are limited by silicon's indirect band-gap. III-V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III-V material grown directly on silicon substrates. The high quality of the III-V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems.

Emulating weak localization using a solid-state quantum circuit.

PubMed

Chen, Yu; Roushan, P; Sank, D; Neill, C; Lucero, Erik; Mariantoni, Matteo; Barends, R; Chiaro, B; Kelly, J; Megrant, A; Mutus, J Y; O'Malley, P J J; Vainsencher, A; Wenner, J; White, T C; Yin, Yi; Cleland, A N; Martinis, John M

2014-10-14

Quantum interference is one of the most fundamental physical effects found in nature. Recent advances in quantum computing now employ interference as a fundamental resource for computation and control. Quantum interference also lies at the heart of sophisticated condensed matter phenomena such as Anderson localization, phenomena that are difficult to reproduce in numerical simulations. Here, employing a multiple-element superconducting quantum circuit, with which we manipulate a single microwave photon, we demonstrate that we can emulate the basic effects of weak localization. By engineering the control sequence, we are able to reproduce the well-known negative magnetoresistance of weak localization as well as its temperature dependence. Furthermore, we can use our circuit to continuously tune the level of disorder, a parameter that is not readily accessible in mesoscopic systems. Demonstrating a high level of control, our experiment shows the potential for employing superconducting quantum circuits as emulators for complex quantum phenomena.

Designing Novel Quaternary Quantum Reversible Subtractor Circuits

NASA Astrophysics Data System (ADS)

Haghparast, Majid; Monfared, Asma Taheri

2018-01-01

Reversible logic synthesis is an important area of current research because of its ability to reduce energy dissipation. In recent years, multiple valued logic has received great attention due to its ability to reduce the width of the reversible circuit which is a main requirement in quantum technology. Subtractor circuits are between major components used in quantum computers. In this paper, we will discuss the design of a quaternary quantum reversible half subtractor circuit using quaternary 1-qudit, 2-qudit Muthukrishnan-Stroud and 3-qudit controlled gates and a 2-qudit Generalized quaternary gate. Then a design of a quaternary quantum reversible full subtractor circuit based on the quaternary half subtractor will be presenting. The designs shall then be evaluated in terms of quantum cost, constant input, garbage output, and hardware complexity. The proposed quaternary quantum reversible circuits are the first attempt in the designing of the aforementioned subtractor.

Quantum Gravity in Cyclic (ekpyrotic) and Multiple (anthropic) Universes with Strings And/or Loops

NASA Astrophysics Data System (ADS)

Chung, T. J.

2008-09-01

This paper addresses a hypothetical extension of ekpyrotic and anthropic principles, implying cyclic and multiple universes, respectively. Under these hypotheses, from time immemorial (t = -∞), a universe undergoes a big bang from a singularity, initially expanding and eventually contracting to another singularity (big crunch). This is to prepare for the next big bang, repeating these cycles toward eternity (t = +∞), every 30 billion years apart. Infinity in time backward and forward (t = ±∞) is paralleled with infinity in space (Xi = ±∞), allowing multiple universes to prevail, each undergoing big bangs and big crunches similarly as our own universe. It is postulated that either string theory and /or loop quantum gravity might be able to substantiate these hypotheses.

Vibration-translation energy transfer in anharmonic diatomic molecules. 2: The vibrational quantum number dependence

NASA Technical Reports Server (NTRS)

Mckenzie, R. L.

1975-01-01

A semiclassical model of the inelastic collision between a vibrationally excited anharmonic oscillator and a structureless atom was used to predict the variation of thermally averaged vibration-translation rate coefficients with temperature and initial-state quantum number. Multiple oscillator states were included in a numerical solution for collinear encounters. The results are compared with CO-He experimental values for both ground and excited initial states using several simplified forms of the interaction potential. The numerical model was also used as a basis for evaluating several less complete but analytic models. Two computationally simple analytic approximations were found that successfully reproduced the numerical rate coefficients for a wide range of molecular properties and collision partners. Their limitations were also identified. The relative rates of multiple-quantum transitions from excited states were evaluated for several molecular types.

Optical levitation of a microdroplet containing a single quantum dot

NASA Astrophysics Data System (ADS)

Minowa, Yosuke; Kawai, Ryoichi; Ashida, Masaaki

2015-03-01

We demonstrate the optical levitation or trapping in helium gas of a single quantum dot (QD) within a liquid droplet. Bright single photon emission from the levitated QD in the droplet was observed for more than 200 s. The observed photon count rates are consistent with the value theoretically estimated from the two-photon-action cross section. This paper presents the realization of an optically levitated solid-state quantum emitter. This paper was published in Optics Letters and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website: https://www.opticsinfobase.org/ol/abstract.cfm?uri=ol-40-6-906. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law.

Electron-electron interaction in Multiple Quantum Wells

NASA Astrophysics Data System (ADS)

Zybert, M.; Marchewka, M.; Tomaka, G.; Sheregii, E. M.

2012-07-01

The complex investigation of the magneto-transport effects in structures containing multiple quantum well (MQWs) based on the GaAs/AlGaAs-heterostructures has been performed. The MQWs investigated have different electron densities in QWs. The parameters of 2DEG in MQWs were determined from the data of the Integer Quantum Hall Effect (IQHE) and Shubnikov-de Haas oscillations (SdH) observed at low temperatures (0.6-4.2 K). The method of calculation of the electron states energies in MQWs has been developed which is based on the splitting of these states due to the exchange interaction (SAS-splitting, see D. Płoch et al., Phys. Rev. B 79 (2009) 195434) including the screening of this interaction. The IQHE and SdH observed in these multilayer structures with the third degree of freedom for electrons are interpreted from this.

Impact of biexcitons on the relaxation mechanisms of polaritons in III-nitride based multiple quantum well microcavities

NASA Astrophysics Data System (ADS)

Corfdir, P.; Levrat, J.; Rossbach, G.; Butté, R.; Feltin, E.; Carlin, J.-F.; Christmann, G.; Lefebvre, P.; Ganière, J.-D.; Grandjean, N.; Deveaud-Plédran, B.

2012-06-01

We report on the direct observation of biexcitons in a III-nitride based multiple quantum well microcavity operating in the strong light-matter coupling regime by means of nonresonant continuous wave and time-resolved photoluminescence at low temperature. First, the biexciton dynamics is investigated for the bare active medium (multiple quantum wells alone) evidencing localization on potential fluctuations due to alloy disorder and thermalization between both localized and free excitonic and biexcitonic populations. Then, the role of biexcitons is considered for the full microcavity: in particular, we observe that for specific detunings the bottom of the lower polariton branch is directly fed by the radiative dissociation of either cavity biexcitons or excitons mediated by one LO-phonon. Accordingly, minimum polariton lasing thresholds are observed, when the bottom of the lower polariton branch corresponds in energy to the exciton or cavity biexciton first LO-phonon replica. This singular observation highlights the role of excitonic molecules in the polariton condensate formation process as being a more efficient relaxation channel when compared to the usually assumed acoustical phonon emission one.

Quantum walks: The first detected passage time problem

NASA Astrophysics Data System (ADS)

Friedman, H.; Kessler, D. A.; Barkai, E.

2017-03-01

Even after decades of research, the problem of first passage time statistics for quantum dynamics remains a challenging topic of fundamental and practical importance. Using a projective measurement approach, with a sampling time τ , we obtain the statistics of first detection events for quantum dynamics on a lattice, with the detector located at the origin. A quantum renewal equation for a first detection wave function, in terms of which the first detection probability can be calculated, is derived. This formula gives the relation between first detection statistics and the solution of the corresponding Schrödinger equation in the absence of measurement. We illustrate our results with tight-binding quantum walk models. We examine a closed system, i.e., a ring, and reveal the intricate influence of the sampling time τ on the statistics of detection, discussing the quantum Zeno effect, half dark states, revivals, and optimal detection. The initial condition modifies the statistics of a quantum walk on a finite ring in surprising ways. In some cases, the average detection time is independent of the sampling time while in others the average exhibits multiple divergences as the sampling time is modified. For an unbounded one-dimensional quantum walk, the probability of first detection decays like (time)(-3 ) with superimposed oscillations, with exceptional behavior when the sampling period τ times the tunneling rate γ is a multiple of π /2 . The amplitude of the power-law decay is suppressed as τ →0 due to the Zeno effect. Our work, an extended version of our previously published paper, predicts rich physical behaviors compared with classical Brownian motion, for which the first passage probability density decays monotonically like (time)-3 /2, as elucidated by Schrödinger in 1915.

Polyad quantum numbers and multiple resonances in anharmonic vibrational studies of polyatomic molecules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krasnoshchekov, Sergey V.; Stepanov, Nikolay F.

2013-11-14

In the theory of anharmonic vibrations of a polyatomic molecule, mixing the zero-order vibrational states due to cubic, quartic and higher-order terms in the potential energy expansion leads to the appearance of more-or-less isolated blocks of states (also called polyads), connected through multiple resonances. Such polyads of states can be characterized by a common secondary integer quantum number. This polyad quantum number is defined as a linear combination of the zero-order vibrational quantum numbers, attributed to normal modes, multiplied by non-negative integer polyad coefficients, which are subject to definition for any particular molecule. According to Kellman's method [J. Chem. Phys.more » 93, 6630 (1990)], the corresponding formalism can be conveniently described using vector algebra. In the present work, a systematic consideration of polyad quantum numbers is given in the framework of the canonical Van Vleck perturbation theory (CVPT) and its numerical-analytic operator implementation for reducing the Hamiltonian to the quasi-diagonal form, earlier developed by the authors. It is shown that CVPT provides a convenient method for the systematic identification of essential resonances and the definition of a polyad quantum number. The method presented is generally suitable for molecules of significant size and complexity, as illustrated by several examples of molecules up to six atoms. The polyad quantum number technique is very useful for assembling comprehensive basis sets for the matrix representation of the Hamiltonian after removal of all non-resonance terms by CVPT. In addition, the classification of anharmonic energy levels according to their polyad quantum numbers provides an additional means for the interpretation of observed vibrational spectra.« less

An improved design for AlGaN solar-blind avalanche photodiodes with enhanced avalanche ionization

NASA Astrophysics Data System (ADS)

Tang, Yin; Cai, Qing; Yang, Lian-Hong; Dong, Ke-Xiu; Chen, Dun-Jun; Lu, Hai; Zhang, Rong; Zheng, You-Dou

2017-03-01

Not Available Project supported by the State Key Project of Research and Development Plan, China (Grant No. 2016YFB0400903), the National Natural Science Foundation of China (Grant Nos. 61634002, 61274075, and 61474060), the Key Project of Jiangsu Province, China (Grant No. BE2016174), the Anhui University Natural Science Research Project, China (Grant No. KJ2015A153), the Open Fund (KFS) of State Key Lab of Optical Technologieson Nanofabrication and Microengineering, Institute of Optics and Electronics, Chinese Academy of Science.

Analysis of e-beam impact on the resist stack in e-beam lithography process

NASA Astrophysics Data System (ADS)

Indykeiwicz, K.; Paszkiewicz, B.

2013-07-01

Paper presents research on the sub-micron gate, AlGaN /GaN HEMT type transistors, fabrication by e-beam lithography and lift-off technique. The impact of the electron beam on the resists layer and the substrate was analyzed by MC method in Casino v3.2 software. The influence of technological process parameters on the metal structures resolution and quality for paths 100 nm, 300 nm and 500 nm wide and 20 μm long was studied. Qualitative simulation correspondences to the conducted experiments were obtained.

In-situ, Gate Bias Dependent Study of Neutron Irradiation Effects on AlGaN/GaN HFETs

DTIC Science & Technology

2010-03-01

band gap and high breakdown field, AlGaN devices can operate at very high temperature and operating frequency. AlGaN/GaN based structures, have been...stable under ambient conditions [3]. GaN has a wide, direct band gap of 3.4 eV. It is therefore suitable for high temperature devices. Its high...also be grown with a wurtzite crystal structure and has a band - gap of 6.1 eV. Aluminum, due to having smaller atoms than gallium, forms a smaller

Strongly localized donor level in oxygen doped gallium nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wetzel, C.; Suski, T.; Ager, J.W. III

1996-08-01

A classification in terms of localization of donor defects in GaN is performed by Raman spectroscopy under large hydrostatic pressure. We observe a significant decrease of free carrier concentration in highly O doped GaN epitaxial films at 22 GPa, indicating the presence of a strongly localized donor defect at large pressure. Monitoring the phonon plasmon coupled mode, we find similarities with results on highly n-type bulk crystals. We refine the model of localized defects in GaN and transfer it to the AlGaN system.

Wide-bandgap III-Nitride based Second Harmonic Generation

DTIC Science & Technology

2014-10-02

fabrication process for a GaN LPS. Fig. 1: 3-step Fabrication process of a GaN based lateral polar structure. ( a ) Growth of a 20 nm AlN buffer layer...etching of the LT-AlN stripes. This results are shown in Fig. 2 ( a ) and (b). Fig. 2: AFM images of KOH ( a ) and RIE (b) patterned templates for lateral ...was varied between 0.6 - 1.0. FIG. 3: Growth process of AlGaN based Lateral Polar Structures. ( a ) RIE patterning. (b) Growth of HT- AlN. (c

Tunnel barrier schottky

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chu, Rongming; Cao, Yu; Li, Zijian

2018-02-20

A diode includes: a semiconductor substrate; a cathode metal layer contacting a bottom of the substrate; a semiconductor drift layer on the substrate; a graded aluminum gallium nitride (AlGaN) semiconductor barrier layer on the drift layer and having a larger bandgap than the drift layer, the barrier layer having a top surface and a bottom surface between the drift layer and the top surface, the barrier layer having an increasing aluminum composition from the bottom surface to the top surface; and an anode metal layer directly contacting the top surface of the barrier layer.

Frequency-encoded photonic qubits for scalable quantum information processing

DOE PAGES

Lukens, Joseph M.; Lougovski, Pavel

2016-12-21

Among the objectives for large-scale quantum computation is the quantum interconnect: a device that uses photons to interface qubits that otherwise could not interact. However, the current approaches require photons indistinguishable in frequency—a major challenge for systems experiencing different local environments or of different physical compositions altogether. Here, we develop an entirely new platform that actually exploits such frequency mismatch for processing quantum information. Labeled “spectral linear optical quantum computation” (spectral LOQC), our protocol offers favorable linear scaling of optical resources and enjoys an unprecedented degree of parallelism, as an arbitrary Ν-qubit quantum gate may be performed in parallel onmore » multiple Ν-qubit sets in the same linear optical device. Here, not only does spectral LOQC offer new potential for optical interconnects, but it also brings the ubiquitous technology of high-speed fiber optics to bear on photonic quantum information, making wavelength-configurable and robust optical quantum systems within reach.« less

Frequency-encoded photonic qubits for scalable quantum information processing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lukens, Joseph M.; Lougovski, Pavel

Among the objectives for large-scale quantum computation is the quantum interconnect: a device that uses photons to interface qubits that otherwise could not interact. However, the current approaches require photons indistinguishable in frequency—a major challenge for systems experiencing different local environments or of different physical compositions altogether. Here, we develop an entirely new platform that actually exploits such frequency mismatch for processing quantum information. Labeled “spectral linear optical quantum computation” (spectral LOQC), our protocol offers favorable linear scaling of optical resources and enjoys an unprecedented degree of parallelism, as an arbitrary Ν-qubit quantum gate may be performed in parallel onmore » multiple Ν-qubit sets in the same linear optical device. Here, not only does spectral LOQC offer new potential for optical interconnects, but it also brings the ubiquitous technology of high-speed fiber optics to bear on photonic quantum information, making wavelength-configurable and robust optical quantum systems within reach.« less

Quantum chi-squared and goodness of fit testing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Temme, Kristan; Verstraete, Frank

2015-01-15

A quantum mechanical hypothesis test is presented for the hypothesis that a certain setup produces a given quantum state. Although the classical and the quantum problems are very much related to each other, the quantum problem is much richer due to the additional optimization over the measurement basis. A goodness of fit test for i.i.d quantum states is developed and a max-min characterization for the optimal measurement is introduced. We find the quantum measurement which leads both to the maximal Pitman and Bahadur efficiencies, and determine the associated divergence rates. We discuss the relationship of the quantum goodness of fitmore » test to the problem of estimating multiple parameters from a density matrix. These problems are found to be closely related and we show that the largest error of an optimal strategy, determined by the smallest eigenvalue of the Fisher information matrix, is given by the divergence rate of the goodness of fit test.« less

Dislocation Reduction and Stress Relaxation of GaN and InGaN Multiple Quantum Wells with Improved Performance via Serpentine Channel Patterned Mask.

PubMed

Ji, Qingbin; Li, Lei; Zhang, Wei; Wang, Jia; Liu, Peichi; Xie, Yahong; Yan, Tongxing; Yang, Wei; Chen, Weihua; Hu, Xiaodong

2016-08-24

The existence of high threading dislocation density (TDD) in GaN-based epilayers is a long unsolved problem, which hinders further applications of defect-sensitive GaN-based devices. Multiple-modulation of epitaxial lateral overgrowth (ELOG) is used to achieve high-quality GaN template on a novel serpentine channel patterned sapphire substrate (SCPSS). The dislocation blocking brought by the serpentine channel patterned mask, coupled with repeated dislocation bending, can reduce the dislocation density to a yet-to-be-optimized level of ∼2 × 10(5) to 2 × 10(6) cm(-2). About 80% area utilization rate of GaN with low TDD and stress relaxation is obtained. The periodical variations of dislocation density, optical properties and residual stress in GaN-based epilayers on SCPSS are analyzed. The quantum efficiency of InGaN/GaN multiple quantum wells (MQWs) on it can be increased by 52% compared with the conventional sapphire substrate. The reduced nonradiative recombination centers, the enhanced carrier localization, and the suppressed quantum confined Stark effect, are the main determinants of improved luminous performance in MQWs on SCPSS. This developed ELOG on serpentine shaped mask needs no interruption and regrowth, which can be a promising candidate for the heteroepitaxy of semipolar/nonpolar GaN and GaAs with high quality.

Multiple exciton generation in cluster-free alloy Cd(x)Hg(1-x)Te colloidal quantum dots synthesized in water.

PubMed

Kershaw, Stephen V; Kalytchuk, Sergii; Zhovtiuk, Olga; Shen, Qing; Oshima, Takuya; Yindeesuk, Witoon; Toyoda, Taro; Rogach, Andrey L

2014-12-21

A number of different composition CdxHg1-xTe alloy quantum dots have been synthesized using a modified aqueous synthesis and ion exchange method. The benefits of good stoichiometric control and high emission quantum yield were retained whilst also ensuring that the tendency to form gel-like clusters and adsorb excess cations in the stabilizing ligand shells was mitigated using a sequestering method to remove excess ionic material during and after the synthesis. This was highly desirable for ultrafast carrier dynamics measurements, avoiding strong photocharging effects which may mask fundamental carrier signals. Transient grating measurements revealed a composition dependent carrier multiplication process which competes with phonon mediated carrier cooling to deplete the initial hot carrier population. The interplay between these two mechanisms is strongly dependent on the electron effective mass which in these alloys has a marked composition dependence and may be considerably lower than the hole effective mass. For a composition x = 0.52 we measured a maximum carrier multiplication quantum yield of 199 ± 19% with pump photon energy 3 times the bandgap energy, Eg, whilst the threshold energy is calculated to be just 2.15Eg. There is some evidence to suggest an impact ionization process analogous to the inverse Auger S mechanism seen in bulk CdxHg1-xTe.

In-plane, commensurate GaN/AlN junctions: single-layer composite structures, multiple quantum wells and quantum dots

NASA Astrophysics Data System (ADS)

Durgun, Engin; Onen, Abdullatif; Kecik, Deniz; Ciraci, Salim

In-plane composite structures constructed of the stripes or core/shells of single-layer GaN and AlN, which are joined commensurately display diversity of electronic properties, that can be tuned by the size of their constituents. In heterostructures, the dimensionality of electrons change from 2D to 1D upon their confinements in wide constituent stripes leading to the type-I band alignment and hence multiple quantum well structure in the direct space. The δ-doping of one wide stripe by other narrow stripe results in local narrowing or widening of the band gap. The direct-indirect transition of the fundamental band gap of composite structures can be attained depending on the odd or even values of formula unit in the armchair edged heterojunction. In a patterned array of GaN/AlN core/shells, the dimensionality of the electronic states are reduced from 2D to 0D forming multiple quantum dots in large GaN-cores, while 2D electrons propagate in multiply connected AlN shell as if they are in a supercrystal. These predictions are obtained from first-principles calculations based on density functional theory on single-layer GaN and AlN compound semiconductors which were synthesized recently. This work was supported by the Scientific and Technological Research Council of Turkey (TUBITAK) under Project No 115F088.

Tunable quantum criticality and super-ballistic transport in a "charge" Kondo circuit.

PubMed

Iftikhar, Z; Anthore, A; Mitchell, A K; Parmentier, F D; Gennser, U; Ouerghi, A; Cavanna, A; Mora, C; Simon, P; Pierre, F

2018-05-03

Quantum phase transitions (QPTs) are ubiquitous in strongly-correlated materials. However the microscopic complexity of these systems impedes the quantitative understanding of QPTs. Here, we observe and thoroughly analyze the rich strongly-correlated physics in two profoundly dissimilar regimes of quantum criticality. With a circuit implementing a quantum simulator for the three-channel Kondo model, we reveal the universal scalings toward different low-temperature fixed points and along the multiple crossovers from quantum criticality. Notably, an unanticipated violation of the maximum conductance for ballistic free electrons is uncovered. The present charge pseudospin implementation of a Kondo impurity opens access to a broad variety of strongly-correlated phenomena. Copyright © 2018, American Association for the Advancement of Science.

Toward protocols for quantum-ensured privacy and secure voting

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bonanome, Marianna; Buzek, Vladimir; Ziman, Mario

2011-08-15

We present a number of schemes that use quantum mechanics to preserve privacy, in particular, we show that entangled quantum states can be useful in maintaining privacy. We further develop our original proposal [see M. Hillery, M. Ziman, V. Buzek, and M. Bielikova, Phys. Lett. A 349, 75 (2006)] for protecting privacy in voting, and examine its security under certain types of attacks, in particular dishonest voters and external eavesdroppers. A variation of these quantum-based schemes can be used for multiparty function evaluation. We consider functions corresponding to group multiplication of N group elements, with each element chosen by amore » different party. We show how quantum mechanics can be useful in maintaining the privacy of the choices group elements.« less

Modulating emission intensity of GaN-based green light emitting diodes on c-plane sapphire

DOE Office of Scientific and Technical Information (OSTI.GOV)

Du, Chunhua; Ma, Ziguang; Zhou, Junming

2014-04-14

The asymmetric dual-wavelength (green/blue) coupled InGaN/GaN multiple quantum wells were proposed to modulate the green emission intensity. Electroluminescent measurements demonstrate the conspicuous increment of the green light intensity by decreasing the coupled barrier thickness. This was partly attributed to capture of more carriers when holes tunnel across the thinner barrier from the blue quantum wells, as a hole reservoir, to the green quantum wells. While lower effective barrier height of the blue quantum wells benefits improved hole transportation from p-GaN to the active region. Efficiency droop of the green quantum wells was partially alleviated due to the enhanced injection efficiencymore » of holes.« less

Quantum-enhanced sensing from hyperentanglement

NASA Astrophysics Data System (ADS)

Walborn, S. P.; Pimentel, A. H.; Davidovich, L.; de Matos Filho, R. L.

2018-01-01

Hyperentanglement—simultaneous entanglement between multiple degrees of freedom of two or more systems—has been used to enhance quantum information tasks such as quantum communication and photonic quantum computing. Here we show that hyperentanglement can lead to increased quantum advantage in metrology, with contributions from the entanglement in each degree of freedom, allowing for Heisenberg scaling in the precision of parameter estimation. Our experiment employs photon pairs entangled in polarization and spatial degrees of freedom to estimate a small tilt angle of a mirror. Precision limits beyond shot noise are saturated through a simple binary measurement of the polarization state. The dynamics considered here have broad applicability, implying that similar strategies based on hyperentanglement can offer improvement in a wide variety of physical scenarios and metrological tasks.

Frustration and quantum criticality

NASA Astrophysics Data System (ADS)

Vojta, Matthias

2018-06-01

This review article is devoted to the interplay between frustrated magnetism and quantum critical phenomena, covering both theoretical concepts and ideas as well as recent experimental developments in correlated-electron materials. The first part deals with local-moment magnetism in Mott insulators and the second part with frustration in metallic systems. In both cases, frustration can either induce exotic phases accompanied by exotic quantum critical points or lead to conventional ordering with unconventional crossover phenomena. In addition, the competition of multiple phases inherent to frustrated systems can lead to multi-criticality.

Optical devices featuring textured semiconductor layers

DOEpatents

Moustakas, Theodore D [Dover, MA; Cabalu, Jasper S [Cary, NC

2011-10-11

A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

Optical devices featuring textured semiconductor layers

DOEpatents

Moustakas, Theodore D [Dover, MA; Cabalu, Jasper S [Cary, NC

2012-08-07

A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

Protecting quantum memories using coherent parity check codes

NASA Astrophysics Data System (ADS)

Roffe, Joschka; Headley, David; Chancellor, Nicholas; Horsman, Dominic; Kendon, Viv

2018-07-01

Coherent parity check (CPC) codes are a new framework for the construction of quantum error correction codes that encode multiple qubits per logical block. CPC codes have a canonical structure involving successive rounds of bit and phase parity checks, supplemented by cross-checks to fix the code distance. In this paper, we provide a detailed introduction to CPC codes using conventional quantum circuit notation. We demonstrate the implementation of a CPC code on real hardware, by designing a [[4, 2, 2

Topical Meeting on Picosecond Electronics and Optoelectronics

DTIC Science & Technology

1987-10-10

Gee, G. D Thurmond, H. W 8-00 AM (Invited Paper) Yen, Hughes Research Laboratories Design and fabrica- FA1 High-Speed Phenomena In GaAs Quantum Wells...D.H. Auston, P.R. Smith, J.C. Bean, J.P. Harbison, and D. Kaplan , "Picosecond Photoconciuctivity in Amorphous Silicon," in Picosecond Phenomena 1980... FA1 -4 QUANTUM-WELL PHYSICS AND DEVICES C. Weisbuch, Thomson CSF, Presider IA 155 , ,Ii : Al-1 High-Speed Phenomena in GaAs Multiple-Quantum-Wells A

Quantum particles in general spacetimes: A tangent bundle formalism

NASA Astrophysics Data System (ADS)

Wohlfarth, Mattias N. R.

2018-06-01

Using tangent bundle geometry we construct an equivalent reformulation of classical field theory on flat spacetimes which simultaneously encodes the perspectives of multiple observers. Its generalization to curved spacetimes realizes a new type of nonminimal coupling of the fields and is shown to admit a canonical quantization procedure. For the resulting quantum theory we demonstrate the emergence of a particle interpretation, fully consistent with general relativistic geometry. The path dependency of parallel transport forces each observer to carry their own quantum state; we find that the communication of the corresponding quantum information may generate extra particles on curved spacetimes. A speculative link between quantum information and spacetime curvature is discussed which might lead to novel explanations for quantum decoherence and vanishing interference in double-slit or interaction-free measurement scenarios, in the mere presence of additional observers.

Quantum origins of objectivity

NASA Astrophysics Data System (ADS)

Horodecki, R.; Korbicz, J. K.; Horodecki, P.

2015-03-01

In spite of all of its successes, quantum mechanics leaves us with a central problem: How does nature create a bridge from fragile quanta to the objective world of everyday experience? Here we find that a basic structure within quantum mechanics that leads to the perceived objectivity is a so-called spectrum broadcast structure. We uncover this based on minimal assumptions, without referring to any dynamical details or a concrete model. More specifically, working formally within the decoherence theory setting with multiple environments (called quantum Darwinism), we show how a crucial for quantum mechanics notion of nondisturbance due to Bohr [N. Bohr, Phys. Rev. 48, 696 (1935), 10.1103/PhysRev.48.696] and a natural definition of objectivity lead to a canonical structure of a quantum system-environment state, reflecting objective information records about the system stored in the environment.

A Quantum Chemistry Concept Inventory for Physical Chemistry Classes

ERIC Educational Resources Information Center

Dick-Perez, Marilu; Luxford, Cynthia J.; Windus, Theresa L.; Holme, Thomas

2016-01-01

A 14-item, multiple-choice diagnostic assessment tool, the quantum chemistry concept inventory or QCCI, is presented. Items were developed based on published student misconceptions and content coverage and then piloted and used in advanced physical chemistry undergraduate courses. In addition to the instrument itself, data from both a pretest,…

Zn1-xCdxSe/ZnSe multiple quantum well photomodulators

NASA Astrophysics Data System (ADS)

Tang, Jiuyao; Kawakami, Yoichi; Fujita, Shizuo; Fujita, Shigeo

1996-10-01

ZnCdSe/ZnSe multiple quantum well (MQW) transmission and reflection photomodulators operating at room temperature were fabricated employing quantum-confined Stark effect on the exciton absorption. Samples were grown on p-type GaAs substrates by MBE with an i-Zn0.87Cd0.13Se/ZnSe MQW heterostructure sandwiched by a ZnSe p-n junction. The transmission modulator was constructed with a Zn0.87Cd0.13Se/ZnSe MQW glued onto a piece of ITO film-covered glass with silver paste and epoxy. To avoid absorption in GaAs substrates, a window with a diameter of about 2 mm was opened using a selective etch. For the reflective use an Al mirror was deposited on the glass back surface, the device then operates in reflection with the light to be modulated making a double pass through the active quantum well region, thereby increasing the modulation amplitude. Measurement results are given in this paper for transmission, reflection, differential transmission, differential absorption, and differential reflection as a function of the incident photon wavelength and the applied field.

Efficient Carrier Multiplication in Colloidal Silicon Nanorods

DOE PAGES

Stolle, Carl Jackson; Lu, Xiaotang; Yu, Yixuan; ...

2017-08-01

In this study, auger recombination lifetimes, absorption cross sections, and the quantum yields of carrier multiplication (CM), or multiexciton generation (MEG), were determined for solvent-dispersed silicon (Si) nanorods using transient absorption spectroscopy (TAS). Nanorods with an average diameter of 7.5 nm and aspect ratios of 6.1, 19.3, and 33.2 were examined. Colloidal Si nanocrystals of similar diameters were also studied for comparison. The nanocrystals and nanorods were passivated with organic ligands by hydrosilylation to prevent surface oxidation and limit the effects of surface trapping of photoexcited carriers. All samples used in the study exhibited relatively efficient photoluminescence. The Auger lifetimesmore » increased with nanorod length, and the nanorods exhibited higher CM quantum yield and efficiency than the nanocrystals with a similar band gap energy E g. Beyond a critical length, the CM quantum yield decreases. Finally, nanorods with the aspect ratio of 19.3 had the highest CM quantum yield of 1.6 ± 0.2 at 2.9E g, which corresponded to a multiexciton yield that was twice as high as observed for the spherical nanocrystals.« less

Multiparameter Estimation in Networked Quantum Sensors

NASA Astrophysics Data System (ADS)

Proctor, Timothy J.; Knott, Paul A.; Dunningham, Jacob A.

2018-02-01

We introduce a general model for a network of quantum sensors, and we use this model to consider the following question: When can entanglement between the sensors, and/or global measurements, enhance the precision with which the network can measure a set of unknown parameters? We rigorously answer this question by presenting precise theorems proving that for a broad class of problems there is, at most, a very limited intrinsic advantage to using entangled states or global measurements. Moreover, for many estimation problems separable states and local measurements are optimal, and can achieve the ultimate quantum limit on the estimation uncertainty. This immediately implies that there are broad conditions under which simultaneous estimation of multiple parameters cannot outperform individual, independent estimations. Our results apply to any situation in which spatially localized sensors are unitarily encoded with independent parameters, such as when estimating multiple linear or nonlinear optical phase shifts in quantum imaging, or when mapping out the spatial profile of an unknown magnetic field. We conclude by showing that entangling the sensors can enhance the estimation precision when the parameters of interest are global properties of the entire network.

Quantum-enhanced spectroscopy with entangled multiphoton states

NASA Astrophysics Data System (ADS)

Dinani, Hossein T.; Gupta, Manish K.; Dowling, Jonathan P.; Berry, Dominic W.

2016-06-01

Traditionally, spectroscopy is performed by examining the position of absorption lines. However, at frequencies near the transition frequency, additional information can be obtained from the phase shift. In this work we consider the information about the transition frequency obtained from both the absorption and the phase shift, as quantified by the Fisher information in an interferometric measurement. We examine the use of multiple single-photon states, NOON states, and numerically optimized states that are entangled and have multiple photons. We find the optimized states that improve over the standard quantum limit set by independent single photons for some atom number densities.

Hierarchical structures consisting of SiO2 nanorods and p-GaN microdomes for efficiently harvesting solar energy for InGaN quantum well photovoltaic cells.

PubMed

Ho, Cheng-Han; Lien, Der-Hsien; Chang, Hung-Chih; Lin, Chin-An; Kang, Chen-Fang; Hsing, Meng-Kai; Lai, Kun-Yu; He, Jr-Hau

2012-12-07

We experimentally and theoretically demonstrated the hierarchical structure of SiO(2) nanorod arrays/p-GaN microdomes as a light harvesting scheme for InGaN-based multiple quantum well solar cells. The combination of nano- and micro-structures leads to increased internal multiple reflection and provides an intermediate refractive index between air and GaN. Cells with the hierarchical structure exhibit improved short-circuit current densities and fill factors, rendering a 1.47 fold efficiency enhancement as compared to planar cells.

Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices.

PubMed

Sapienza, Luca; Liu, Jin; Song, Jin Dong; Fält, Stefan; Wegscheider, Werner; Badolato, Antonio; Srinivasan, Kartik

2017-07-24

We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots. The motivation of this work is to determine an approach that allows to assess single quantum dots as candidates for quantum nanophotonic devices. By combining optical and scanning probe characterization techniques, we find that single quantum dots often appear in the vicinity of comparatively large topographic features. Despite this, the quantum dots generally do not exhibit significant differences in their non-resonantly pumped emission spectra in comparison to quantum dots appearing in defect-free regions, and this behavior is observed across multiple wafers produced in different growth chambers. Such large surface features are nevertheless a detriment to applications in which single quantum dots are embedded within nanofabricated photonic devices: they are likely to cause large spectral shifts in the wavelength of cavity modes designed to resonantly enhance the quantum dot emission, thereby resulting in a nominally perfectly-fabricated single quantum dot device failing to behave in accordance with design. We anticipate that the approach of screening quantum dots not only based on their optical properties, but also their surrounding surface topographies, will be necessary to improve the yield of single quantum dot nanophotonic devices.

Dissipation, dephasing and quantum Darwinism in qubit systems with random unitary interactions

NASA Astrophysics Data System (ADS)

Balaneskovic, Nenad; Mendler, Marc

2016-09-01

We investigate the influence of dissipation and decoherence on quantum Darwinism by generalizing Zurek's original qubit model of decoherence and the establishment of pointer states [W.H. Zurek, Nat. Phys. 5, 181 (2009); see also arXiv: quant-ph/0707.2832v1, pp. 14-19.]. Our model allows for repeated multiple qubit-qubit couplings between system and environment which are described by randomly applied two-qubit quantum operations inducing entanglement, dissipation and dephasing. The resulting stationary qubit states of system and environment are investigated. They exhibit the intricate influence of entanglement generation, dissipation and dephasing on this characteristic quantum phenomenon.