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Sample records for algan multiple quantum

  1. Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes

    SciTech Connect

    Mehnke, Frank Kuhn, Christian; Guttmann, Martin; Reich, Christoph; Kolbe, Tim; Rass, Jens; Wernicke, Tim; Kueller, Viola; Knauer, Arne; Lapeyrade, Mickael; Einfeldt, Sven; Weyers, Markus; Kneissl, Michael

    2014-08-04

    The design and Mg-doping profile of AlN/Al{sub 0.7}Ga{sub 0.3}N electron blocking heterostructures (EBH) for AlGaN multiple quantum well (MQW) light emitting diodes (LEDs) emitting below 250 nm was investigated. By inserting an AlN electron blocking layer (EBL) into the EBH, we were able to increase the quantum well emission power and significantly reduce long wavelength parasitic luminescence. Furthermore, electron leakage was suppressed by optimizing the thickness of the AlN EBL while still maintaining sufficient hole injection. Ultraviolet (UV)-C LEDs with very low parasitic luminescence (7% of total emission power) and external quantum efficiencies of 0.19% at 246 nm have been realized. This concept was applied to AlGaN MQW LEDs emitting between 235 nm and 263 nm with external quantum efficiencies ranging from 0.002% to 0.93%. After processing, we were able to demonstrate an UV-C LED emitting at 234 nm with 14.5 μW integrated optical output power and an external quantum efficiency of 0.012% at 18.2 A/cm{sup 2}.

  2. Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells

    SciTech Connect

    Li, Xiaohang E-mail: dupuis@gatech.edu; Xie, Hongen; Ponce, Fernando A.; Ryou, Jae-Hyun; Detchprohm, Theeradetch; Dupuis, Russell D. E-mail: dupuis@gatech.edu

    2015-12-14

    We demonstrated onset of deep-ultraviolet (DUV) surface stimulated emission (SE) from c-plane AlGaN multiple-quantum well (MQW) heterostructures grown on a sapphire substrate by optical pumping at room temperature. The onset of SE became observable at a pumping power density of 630 kW/cm{sup 2}. Spectral deconvolution revealed superposition of a linearly amplified spontaneous emission peak at λ ∼ 257.0 nm with a full width at half maximum (FWHM) of ∼12 nm and a superlinearly amplified SE peak at λ ∼ 260 nm with a narrow FWHM of less than 2 nm. In particular, the wavelength of ∼260 nm is the shortest wavelength of surface SE from III-nitride MQW heterostructures to date. Atomic force microscopy and scanning transmission electron microscopy measurements were employed to investigate the material and structural quality of the AlGaN heterostructures, showing smooth surface and sharp layer interfaces. This study offers promising results for AlGaN heterostructures grown on sapphire substrates for the development of DUV vertical cavity surface emitting lasers (VCSELs)

  3. Improved characteristics of ultraviolet AlGaN multiple-quantum-well laser diodes with step-graded quantum barriers close to waveguide layers

    NASA Astrophysics Data System (ADS)

    Cai, Xuefen; Li, Shuping; Kang, Junyong

    2016-09-01

    Ultraviolet AlGaN multiple-quantum-well laser diodes (LDs) with step-graded quantum barriers (QBs) instead of conventional first and last QBs close to waveguide layers are proposed. The characteristics of this type of laser diodes are numerically investigated by using the software PICS3D and it is found that the performances of these LDs are greatly improved. The results indicates that the structure with step-graded QBs exhibits higher output light power, slope efficiency and emission intensity, as well as lower series resistance and threshold current density under the identical condition, compared with conventional LD structure.

  4. On the increased efficiency in InGaN-based multiple quantum wells emitting at 530-590 nm with AlGaN interlayers

    NASA Astrophysics Data System (ADS)

    Koleske, D. D.; Fischer, A. J.; Bryant, B. N.; Kotula, P. G.; Wierer, J. J.

    2015-04-01

    InGaN/AlGaN/GaN-based multiple quantum wells (MQWs) with AlGaN interlayers (ILs) are investigated, specifically to examine the fundamental mechanisms behind their increased radiative efficiency at wavelengths of 530-590 nm. The AlzGa1-zN (z~0.38) IL is ~1-2 nm thick, and is grown after and at the same growth temperature as the ~3 nm thick InGaN quantum well (QW). This is followed by an increase in temperature for the growth of a ~10 nm thick GaN barrier layer. The insertion of the AlGaN IL within the MQW provides various benefits. First, the AlGaN IL allows for growth of the InxGa1-xN QW well below typical growth temperatures to achieve higher x (up to~0.25). Second, annealing the IL capped QW prior to the GaN barrier growth improves the AlGaN IL smoothness as determined by atomic force microscopy, improves the InGaN/AlGaN/GaN interface quality as determined from scanning transmission electron microscope images and x-ray diffraction, and increases the radiative efficiency by reducing non-radiative defects as determined by time-resolved photoluminescence measurements. Finally, the AlGaN IL increases the spontaneous and piezoelectric polarization induced electric fields acting on the InGaN QW, providing an additional red-shift to the emission wavelength as determined by Schrodinger-Poisson modeling and fitting to the experimental data. The relative impact of increased indium concentration and polarization fields on the radiative efficiency of MQWs with AlGaN ILs is explored along with implications to conventional longer wavelength emitters.

  5. High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

    SciTech Connect

    Bryan, Zachary Bryan, Isaac; Sitar, Zlatko; Collazo, Ramón; Xie, Jinqiao; Mita, Seiji

    2015-04-06

    The internal quantum efficiency (IQE) of Al{sub 0.55}Ga{sub 0.45}N/AlN and Al{sub 0.55}Ga{sub 0.45}N/Al{sub 0.85}Ga{sub 0.15}N UVC MQW structures was analyzed. The use of bulk AlN substrates enabled us to undoubtedly distinguish the effect of growth conditions, such as V/III ratio, on the optical quality of AlGaN based MQWs from the influence of dislocations. At a high V/III ratio, a record high IQE of ∼80% at a carrier density of 10{sup 18 }cm{sup −3} was achieved at ∼258 nm. The high IQE was correlated with the decrease of the non-radiative coefficient A and a reduction of midgap defect luminescence, all suggesting that, in addition to dislocations, point defects are another major factor that strongly influences optical quality of AlGaN MQW structures.

  6. Optical polarization control of photo-pumped stimulated emissions at 238 nm from AlGaN multiple-quantum-well laser structures on AlN substrates

    NASA Astrophysics Data System (ADS)

    Lachab, Mohamed; Sun, WenHong; Jain, Rakesh; Dobrinsky, Alex; Gaevski, Mikhail; Rumyantsev, Sergey; Shur, Michael; Shatalov, Max

    2017-01-01

    We demonstrate the capability to control the optical polarization of room-temperature stimulated emissions (SEs) at 238-239 nm from optically pumped AlGaN multiple-quantum-well (MQW) heterostructures on bulk AlN. The results of structural and optical characterizations provided evidence that altering the strain state in the pseudomorphically grown MQW laser structures enabled the switching of the polarization direction of the SE from predominantly transverse electric (TE) at 238 nm to predominantly transverse magnetic (TM) at 239 nm. The SE observed at 238 nm represents the shortest peak wavelength with TE polarization yet reported for AlGaN materials grown on any type of substrate.

  7. Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate

    SciTech Connect

    Li, Xiao-Hang E-mail: dupuis@gatech.edu; Kao, Tsung-Ting; Satter, Md. Mahbub; Shen, Shyh-Chiang; Yoder, P. Douglas; Detchprohm, Theeradetch; Dupuis, Russell D. E-mail: dupuis@gatech.edu; Wei, Yong O.; Wang, Shuo; Xie, Hongen; Fischer, Alec M.; Ponce, Fernando A.

    2015-01-26

    We demonstrate transverse-magnetic (TM) dominant deep-ultraviolet (DUV) stimulated emission from photo-pumped AlGaN multiple-quantum-well lasers grown pseudomorphically on an AlN/sapphire template by means of photoluminescence at room temperature. The TM-dominant stimulated emission was observed at wavelengths of 239, 242, and 243 nm with low thresholds of 280, 250, and 290 kW/cm{sup 2}, respectively. In particular, the lasing wavelength of 239 nm is shorter compared to other reports for AlGaN lasers grown on foreign substrates including sapphire and SiC. The peak wavelength difference between the transverse-electric (TE)-polarized emission and TM-polarized emission was approximately zero for the lasers in this study, indicating the crossover of crystal-field split-off hole and heavy-hole valence bands. The rapid variation of polarization between TE- and TM-dominance versus the change in lasing wavelength from 243 to 249 nm can be attributed to a dramatic change in the TE-to-TM gain coefficient ratio for the sapphire-based DUV lasers in the vicinity of TE-TM switch.

  8. Room-temperature deep-ultraviolet lasing at 241.5 nm of AlGaN multiple-quantum-well laser

    NASA Astrophysics Data System (ADS)

    Takano, Takayoshi; Narita, Yoshinobu; Horiuchi, Akihiko; Kawanishi, Hideo

    2004-05-01

    Room-temperature deep-ultraviolet lasing of AlxGa1-xN multiple-quantum-well lasers with an Al composition x of 0.66 was achieved at 241.5 nm under pulsed optical pumping. The threshold pumping power was approximately 1200 kW/cm2 at room temperature. The shortest lasing wavelength was 231.8 nm at 20 K. The laser structure was grown on a high-quality AlN layer, which was grown on a 4H-SiC substrate by inserting an AlN/GaN multibuffer-layer structure between the substrate and the AlN layer. Temperature dependence of lasing wavelength was also estimated to be 0.01 and 0.03 nm/K in the temperature region from 20 to 150 K and from 160 K to room temperature, respectively. The laser cavity was made of a cleaved facet of AlGaN epitaxial layers and a SiC substrate. For this purpose, it was necessary to polish the wafer to a thickness of less than 100 μm. The optimal wafer thickness for cleaving in our experiments was 60-70 μm.

  9. The effect of surface cleaning on quantum efficiency in AlGaN photocathode

    NASA Astrophysics Data System (ADS)

    Hao, Guanghui; Zhang, Yijun; Jin, Muchun; Feng, Cheng; Chen, Xinlong; Chang, Benkang

    2015-01-01

    To improve the quantum efficiency of AlGaN photocathode, various surfaces cleaning techniques for the removal of alumina and carbon from AlGaN photocathode surface were investigated. The atomic compositions of AlGaN photocathode structure and surface were measured by the X-ray photoelectron spectroscopy and Ar+ ion sputtering. It is found that the boiling KOH solution and the mixture of sulfuric acid and hydrogen peroxide, coupled with the thermal cleaning at 850 °C can effectively remove the alumina and carbon from the AlGaN photocathode surface. The quantum efficiency of AlGaN photocathode is improved to 35.1% at 240 nm, an increase of 50% over the AlGaN photocathode chemically cleaned by only the mixed solution of sulfuric acid and hydrogen peroxide and thermally cleaned at 710 °C.

  10. Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes

    SciTech Connect

    Reich, Christoph Guttmann, Martin; Wernicke, Tim; Mehnke, Frank; Kuhn, Christian; Feneberg, Martin; Goldhahn, Rüdiger; Rass, Jens; Kneissl, Michael; Lapeyrade, Mickael; Einfeldt, Sven; Knauer, Arne; Kueller, Viola; Weyers, Markus

    2015-10-05

    The optical polarization of emission from ultraviolet (UV) light emitting diodes (LEDs) based on (0001)-oriented Al{sub x}Ga{sub 1−x}N multiple quantum wells (MQWs) has been studied by simulations and electroluminescence measurements. With increasing aluminum mole fraction in the quantum well x, the in-plane intensity of transverse-electric (TE) polarized light decreases relative to that of the transverse-magnetic polarized light, attributed to a reordering of the valence bands in Al{sub x}Ga{sub 1−x}N. Using k ⋅ p theoretical model calculations, the AlGaN MQW active region design has been optimized, yielding increased TE polarization and thus higher extraction efficiency for bottom-emitting LEDs in the deep UV spectral range. Using (i) narrow quantum wells, (ii) barriers with high aluminum mole fractions, and (iii) compressive growth on patterned aluminum nitride sapphire templates, strongly TE-polarized emission was observed at wavelengths as short as 239 nm.

  11. Deep-ultraviolet polychromatic emission from three-dimensionally structured AlGaN quantum wells

    NASA Astrophysics Data System (ADS)

    Kataoka, Ken; Funato, Mitsuru; Kawakami, Yoichi

    2017-03-01

    Three-dimensional (3D) AlGaN/AlN quantum wells (QWs) were fabricated on trench-patterned AlN templates using a regrowth technique based on metalorganic vapor phase epitaxy. The 3D structures are composed of planar (0001) facets, \\{ 1\\bar{1}01\\} facets, and misoriented (0001) planes with bunched steps. Cathodoluminescence spectroscopy revealed double-peaked deep-ultraviolet (DUV) emissions: the shorter-wavelength emission was attributed to the (0001) facets, whereas the longer-wavelength emission arose from bunched step structures located around the bottom corner of the AlN trench, a region in which the AlGaN QWs possessed a relatively high Ga concentration and a thick well width compared with planar (0001) QWs.

  12. Enhanced photoluminescence efficiency in AlGaN quantum wells with gradient-composition AlGaN barriers

    NASA Astrophysics Data System (ADS)

    Shevchenko, E. A.; Nechaev, D. V.; Jmerik, V. N.; Kaibyshev, V. Kh; Ivanov, S. V.; Toropov, A. A.

    2016-08-01

    We present photoluminescence studies of AIxGa1-xN/AlyGa1-yN (y = x+0.3) quantum well (QW) heterostructures with graded AI content in barrier layers, emitting in the range 285-315 nm. The best-established internal quantum efficiency of the QW emission is as high as 81% at 300 K, owing to enhanced activation energy of charge carriers and exciton binding energy in the QW heterostructure with optimized design.

  13. Coulomb correlation effects and density dependence of radiative recombination rates in polar AlGaN quantum wells

    NASA Astrophysics Data System (ADS)

    Rupper, Greg; Rudin, Sergey; Bertazzi, Francesco; Garrett, Gregory; Wraback, Michael

    2013-03-01

    AlGaN narrow quantum wells are important elements of deep-ultraviolet light emitting devices. The electron-hole radiative recombination rates are important characteristics of these nanostructures. In this work we evaluated their dependence on carrier density and lattice temperature and compared our theoretical results with the experimentally determined radiative lifetimes in the c-plane grown AlGaN quantum wells. The bands were determined in the k .p approximation for a strained c-plane wurtzite quantum well and polarization fields were included in the model. In order to account for Coulomb correlations at relatively high densities of photo-excited electron-hole plasma and arbitrary temperature, we employed real-time Green's function formalism with self-energies evaluated in the self-consistent T-matrix approximation. The luminescence spectrum was obtained from the susceptibility by summing over scattering in-plane directions and polarization states. The recombination coefficient was obtained from the integrated photo-luminescence. The density dependence of the radiative recombination rate shows effects of strong screening of the polarization electric field at high photo-excitation density.

  14. Performance improvement of AlGaN-based deep-ultraviolet light-emitting diodes via asymmetric step-like AlGaN quantum wells

    NASA Astrophysics Data System (ADS)

    Lu, Lin; Wan, Zhi; Xu, FuJun; Wang, XinQiang; Lv, Chen; Shen, Bo; Jiang, Ming; Chen, QiGong

    2017-04-01

    Characteristics of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) with light-emitting wavelength around 265 nm via step-like AlGaN quantum wells (QWs) have been investigated. Simulation approach yields a result that, there is significant enhancement of light output power (LOP) for DUV-LEDs with two-layer step-like AlGaN QWs compared to that with conventional one. The location and thickness of AlGaN layer with higher Al-content in the step-like QWs are confirmed to significantly affect the distributions and overlap of electron and hole wavefunctions. The best material characteristic is obtained when the step-like QW is designed as an asymmetric structure, such as Al0.74Ga0.26N (1.8 nm)/Al0.64Ga0.36N (1.2 nm), where AlGaN with higher Al-content layer is set to be located nearer from n-side and be thick as far as possible. The key factors for the performance improvements for this specific design is the enhanced hole transport and mitigated auger recombination.

  15. AlGaN Nanostructures with Extremely High Room-Temperature Internal Quantum Efficiency of Emission Below 300 nm

    NASA Astrophysics Data System (ADS)

    Toropov, A. A.; Shevchenko, E. A.; Shubina, T. V.; Jmerik, V. N.; Nechaev, D. V.; Evropeytsev, E. A.; Kaibyshev, V. Kh.; Pozina, G.; Rouvimov, S.; Ivanov, S. V.

    2016-11-01

    We present theoretical optimization of the design of a quantum well (QW) heterostructure based on AlGaN alloys, aimed at achievement of the maximum possible internal quantum efficiency of emission in the mid-ultraviolet spectral range below 300 nm at room temperature. A sample with optimized parameters was fabricated by plasma-assisted molecular beam epitaxy using the submonolayer digital alloying technique for QW formation. High-angle annular dark-field scanning transmission electron microscopy confirmed strong compositional disordering of the thus-fabricated QW, which presumably facilitates lateral localization of charge carriers in the QW plane. Stress evolution in the heterostructure was monitored in real time during growth using a multibeam optical stress sensor intended for measurements of substrate curvature. Time-resolved photoluminescence spectroscopy confirmed that radiative recombination in the fabricated sample dominated in the whole temperature range up to 300 K. This leads to record weak temperature-induced quenching of the QW emission intensity, which at 300 K does not exceed 20% of the low-temperature value.

  16. Low threshold for optical damage in AlGaN epilayers and heterostructures

    SciTech Connect

    Saxena, Tanuj; Tamulaitis, Gintautas; Shatalov, Max; Yang, Jinwei; Gaska, Remis; Shur, Michael S.

    2013-11-28

    Laser pulses with duration much shorter than the effective carrier lifetime cause permanent photoluminescence (PL) quenching and enhancement of PL decay rate in bare-faceted and capped AlGaN epilayers and multiple quantum wells at pulse energies about an order of magnitude lower than those causing the surface to melt and degrade. In contrast, GaN epilayers exhibit no photomodification in the same excitation intensity range. PL spectra and decay kinetics show that lattice heating is not responsible for the observed changes in AlGaN, which result from the formation of nonradiative recombination centers via recombination-enhanced defect reactions occurring at high nonequilibrium carrier densities.

  17. Statistical nanoscale study of localised radiative transitions in GaN/AlGaN quantum wells and AlGaN epitaxial layers

    NASA Astrophysics Data System (ADS)

    Rigutti, L.; Mancini, L.; Lefebvre, W.; Houard, J.; Hernàndez-Maldonado, D.; Di Russo, E.; Giraud, E.; Butté, R.; Carlin, J.-F.; Grandjean, N.; Blavette, D.; Vurpillot, F.

    2016-09-01

    Compositional disorder has important consequences on the optical properties of III-nitride ternary alloys. In AlGaN epilayers and AlGaN-based quantum heterostructures, the potential fluctuations induced by such disorder lead to the localisation of carriers at low temperature, which affects their transition energies. Using the correlations between micro-photoluminescence, scanning transmission electron microscopy and atom probe tomography we have analysed the optical behaviour of Al0.25Ga0.75N epilayers and that of GaN/AlGaN quantum wells, and reconstructed in three dimensions the distribution of chemical species with sub-nanometre spatial resolution. These composition maps served as the basis for the effective mass calculation of electrons and holes involved in radiative transitions. Good statistical predictions were subsequently obtained for the above-mentioned transition and localisation energies by establishing a link with their microstructural properties.

  18. Quantum Dot-Like Behavior of Compositional Fluctuations in AlGaN Nanowires.

    PubMed

    Belloeil, M; Gayral, B; Daudin, B

    2016-02-10

    We report on the structural and optical properties of AlxGa(1-x)N nanowire sections grown by plasma-assisted molecular beam epitaxy on GaN nanowire bases used as a template. Based on a combination of scanning electron microscopy, microphotoluminescence, time-resolved microphotoluminescence, and photon correlation experiments, it is shown that compositional fluctuations in AlxGa(1-x)N sections associated with carrier localization optically behave as quantum dots. Moreover, most of the micro-optical properties of such fluctuations are demonstrated to be very little dependent on kinetic growth parameters such as AlxGa(1-x)N growth temperature and AlN molar fraction in the alloy, which govern the macrostructural properties of AlxGa(1-x)N sections.

  19. Measurement and simulation of top- and bottom-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors with high external quantum efficiencies

    SciTech Connect

    Brendel, Moritz Helbling, Markus; Knigge, Andrea; Brunner, Frank; Weyers, Markus

    2015-12-28

    A comprehensive study on top- and bottom-illuminated Al{sub 0.5}Ga{sub 0.5}N/AlN metal-semiconductor-metal (MSM) photodetectors having different AlGaN absorber layer thickness is presented. The measured external quantum efficiency (EQE) shows pronounced threshold and saturation behavior as a function of applied bias voltage up to 50 V reaching about 50% for 0.1 μm and 67% for 0.5 μm thick absorber layers under bottom illumination. All experimental findings are in very good accordance with two-dimensional drift-diffusion modeling results. By taking into account macroscopic polarization effects in the hexagonal metal-polar +c-plane AlGaN/AlN heterostructures, new insights into the general device functionality of AlGaN-based MSM photodetectors are obtained. The observed threshold/saturation behavior is caused by a bias-dependent extraction of photoexcited holes from the Al{sub 0.5}Ga{sub 0.5}N/AlN interface. While present under bottom illumination for any AlGaN layer thickness, under top illumination this mechanism influences the EQE-bias characteristics only for thin layers.

  20. High quantum efficiency ultraviolet/blue AlGaN /InGaN photocathodes grown by molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Leopold, D. J.; Buckley, J. H.; Rebillot, P.

    2005-08-01

    Enormous technological breakthroughs have been made in optoelectronic devices through the use of advanced heteroepitaxial-semiconductor crystal-growth techniques. This technology is being extended toward enhanced ultraviolet/blue single-photon detection through the design and fabrication of atomically tailored heteroepitaxial GaAlN /GaInN photocathode device structures. The AlGaN /InGaN system is ideal because the band gap can be tailored over an energy range from 0.8 to 6.2 eV and epitaxial thin-film layers can be grown directly on optically transparent sapphire substrates. Although a single p-type GaN layer activated with cesium can produce reasonably high quantum efficiency in the ultraviolet wave band, a more complex design is necessary to achieve high levels extending into the blue region. In the present work, band-gap engineering concepts have been utilized to design heterostructure photocathodes. The increased level of sophistication offered by this approach has been exploited in an attempt to precisely control photoelectron transport to the photocathode surface. Thin heterostructure layers designed for transmission-mode detection were fabricated by molecular-beam epitaxy. A quantum efficiency of 40% at 250 nm was achieved using a thin, compositionally graded GaN /InGaN layer, epitaxially grown on a sapphire substrate. Further improvements are anticipated through continued optimization, defect reduction, and more complex photocathode designs.

  1. Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells

    SciTech Connect

    Chen, G.; Rong, X.; Xu, F. J.; Tang, N.; Wang, X. Q. Shen, B.; Fu, K.; Zhang, B. S.; Hashimoto, H.; Yoshikawa, A.; Ge, W. K.

    2014-04-28

    Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4 μm, which shows potential applications on near infrared detection.

  2. Performance enhancement of blue light-emitting diodes with InGaN/GaN multi-quantum wells grown on Si substrates by inserting thin AlGaN interlayers

    NASA Astrophysics Data System (ADS)

    Kimura, Shigeya; Yoshida, Hisashi; Uesugi, Kenjiro; Ito, Toshihide; Okada, Aoi; Nunoue, Shinya

    2016-09-01

    We have grown blue light-emitting diodes (LEDs) having InGaN/GaN multi-quantum wells (MQWs) with thin AlyGa1-yN (0 < y < 0.3) interlayers on Si(111) substrates. It was found by high-resolution transmission electron microscopy observations and three-dimensional atom probe analysis that 1-nm-thick interlayers with an AlN mole fraction of less than y = 0.3 were continuously formed between GaN barriers and InGaN wells, and that the AlN mole fraction up to y = 0.15 could be consistently controlled. The external quantum efficiency of the blue LED was enhanced in the low-current-density region (≤45 A/cm2) but reduced in the high-current-density region by the insertion of the thin Al0.15Ga0.85N interlayers in the MQWs. We also found that reductions in both forward voltage and wavelength shift with current were achieved by inserting the interlayers even though the inserted AlGaN layers had potential higher than that of the GaN barriers. The obtained peak wall-plug efficiency was 83% at room temperature. We suggest that the enhanced electroluminescence (EL) performance was caused by the introduction of polarization-induced hole carriers in the InGaN wells on the side adjacent to the thin AlGaN/InGaN interface and efficient electron carrier transport through multiple wells. This model is supported by temperature-dependent EL properties and band-diagram simulations. We also found that inserting the interlayers brought about a reduction in the Shockley-Read-Hall nonradiative recombination component, corresponding to the shrinkage of V-defects. This is another conceivable reason for the observed performance enhancement.

  3. Pressure Study of Photoluminescence in GaN/InGaN/ AlGaN Quantum Wells

    NASA Astrophysics Data System (ADS)

    Perlin, Piotr; Iota, V.; Weinstein, B. A.; Wisniewski, P.; Osinski, M.; Eliseev, P. G.

    1997-03-01

    We have studied the photoluminescence (PL) from two commercial high brightness single quantum well light emitting diodes (Nichia Chem. Industs.) with In_xGa_1-x N (x=0.45 and 0.2) as the active layers under hydrostatic pressures up to 7 GPa. These diodes are the best existing light emitters at short wavelengths, having the emission wavelengths of 430 nm and 530 nm depending on the content of indium in the 30 Åthick quantum wells. Although these devices show a remarkable quality and efficiency (luminosity as high as 12 cd), the mechanism of recombination remains obscure. We discovered that the pressure coefficient for each of the observed PL peaks is dramatically (2-3 times) lower than that of the energy gap of its InGaN active layer. These observations, in conjunction with the fact that the observed emission occurs below the energy gap of the quantum well material, and also considering the anomalous temperature behavior of the emission (peak energy increasing with temperature) suggest the involvement of localized states and exclude a simple band-to-band recombination picture. These localized states may be tentatively attributed to the presence of band tails in the gap which stem from composition fluctuations in the InGaN alloy. (figures)

  4. Inverted vertical algan deep ultraviolet leds grown on p-SiC substrates by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Nothern, Denis Maurice

    Deep ultraviolet light emitting diodes (UV LEDs) are an important emerging technology for a number of applications such as water/air/surface disinfection, communications, and epoxy curing. However, as of yet, deep UV LEDs grown on sapphire substrates are neither efficient enough nor powerful enough to fully serve these and other potential applications. The majority of UV LEDs reported so far in the literature are grown on sapphire substrates and their design consists of AlGaN quantum wells (QWs) embedded in an AlGaN p-i-n junction with the n-type layer on the sapphire. These devices suffer from a high concentration of threading defects originating from the large lattice mismatch between the sapphire substrate and AlGaN alloys. Other issues include the poor doping efficiency of the n- and particularly the p-AlGaN alloys, the extraction of light through the sapphire substrate, and the heat dissipation through the thermally insulating sapphire substrate. These problems have historically limited the internal quantum efficiency (IQE), injection efficiency (IE), and light extraction efficiency (EE) of devices. As a means of addressing these efficiency and power challenges, I have contributed to the development of a novel inverted vertical deep UV LED design based on AlGaN grown on p-SiC substrates. Starting with a p-SiC substrate that serves as the p-type side of the p-i-n junction largely eliminates the necessity for the notoriously difficult p-type doping of AlGaN alloys, and allows for efficient heat dissipation through the highly thermally conductive SiC substrate. UV light absorption in the SiC substrate can be addressed by first growing p-type doped distributed Bragg reflectors (DBRs) on top of the substrate prior to the deposition of the active region of the device. A number of n-AlGaN films, AlGaN/AlGaN multiple quantum wells, and p-type doped AlGaN DBRs were grown by molecular beam epitaxy (MBE). These were characterized in situ by reflected high energy electron

  5. Short-period intrinsic Stark GaN /AlGaN superlattice as a Bloch oscillator

    NASA Astrophysics Data System (ADS)

    Litvinov, V. I.; Manasson, A.; Pavlidis, D.

    2004-07-01

    We discuss the properties of AlGaN /GaN superlattice (SL) related to the feasibility of a terahertz-range oscillator. The distortion of the conduction-band profile by the polarization fields has been taken into account. We have calculated the conduction-band offset between the pseudomorphic AlGaN barrier and the GaN quantum well, the first miniband width and energy dispersion, as functions of Al content in the barrier. As the short-period SL miniband energy dispersion contains contributions from next to nearest neighbors, it causes anharmonic electron oscillations at the multiples of the fundamental Bloch frequency. The Al content and SL period that favor high-frequency oscillations have been determined.

  6. Plasma-assisted molecular beam epitaxy of Al(Ga)N layers and quantum well structures for optically pumped mid-UV lasers on c-Al2O3

    NASA Astrophysics Data System (ADS)

    Ivanov, S. V.; Nechaev, D. V.; Sitnikova, A. A.; Ratnikov, V. V.; Yagovkina, M. A.; Rzheutskii, N. V.; Lutsenko, E. V.; Jmerik, V. N.

    2014-06-01

    This paper reports on novel approaches developed for plasma-assisted molecular beam epitaxy of Al-rich AlGaN epilayers and quantum well heterostructures on c-sapphire, which allowed us to fabricate low-threshold optically-pumped separate confinement heterostructure lasers emitting in the mid-UV spectral range (258-290 nm) with the threshold power density below 600 kW cm-2. The optimum buffer structure has been developed which provides lowering the near-surface threading dislocation density down to 1.5 × 108 and 3 × 109 cm-2 for screw and edge types, respectively, and improving the surface morphology (rms < 0.7 nm at the area of 3 × 3 μm-2). It comprises the high-temperature (780 °C) migration enhanced epitaxy growth of a (30-70) nm thick AlN nucleation layer on c-Al2O3, followed by a 2 μm thick AlN buffer grown under the metal-rich conditions in the Al-flux modulation mode and containing several (up to 6) ultra-thin (˜3 nm) GaN interlayers grown at N-rich conditions. Proper strain engineering in AlGaN single quantum well heterostructure grown atop of the AlN buffer layer enables one to preserve dominant TE polarization of both spontaneous and stimulated emission even at shortest obtained wavelength (258 nm). The threshold power density of stimulated emission as low as 150 kW cm-2 at 289 nm for a single quantum well laser structure has been demonstrated.

  7. An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission

    PubMed Central

    Lee, Jong Won; Kim, Dong Yeong; Park, Jun Hyuk; Schubert, E. Fred; Kim, Jungsub; Lee, Jinsub; Kim, Yong-Il; Park, Youngsoo; Kim, Jong Kyu

    2016-01-01

    While there is an urgent need for semiconductor-based efficient deep ultraviolet (DUV) sources, the efficiency of AlGaN DUV light-emitting diodes (LEDs) remains very low because the extraction of DUV photons is significantly limited by intrinsic material properties of AlGaN. Here, we present an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes for maximizing the power conversion efficiency. PMID:26935402

  8. An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission.

    PubMed

    Lee, Jong Won; Kim, Dong Yeong; Park, Jun Hyuk; Schubert, E Fred; Kim, Jungsub; Lee, Jinsub; Kim, Yong-Il; Park, Youngsoo; Kim, Jong Kyu

    2016-03-03

    While there is an urgent need for semiconductor-based efficient deep ultraviolet (DUV) sources, the efficiency of AlGaN DUV light-emitting diodes (LEDs) remains very low because the extraction of DUV photons is significantly limited by intrinsic material properties of AlGaN. Here, we present an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes for maximizing the power conversion efficiency.

  9. Quantum internet using code division multiple access.

    PubMed

    Zhang, Jing; Liu, Yu-xi; Ozdemir, Sahin Kaya; Wu, Re-Bing; Gao, Feifei; Wang, Xiang-Bin; Yang, Lan; Nori, Franco

    2013-01-01

    A crucial open problem inS large-scale quantum networks is how to efficiently transmit quantum data among many pairs of users via a common data-transmission medium. We propose a solution by developing a quantum code division multiple access (q-CDMA) approach in which quantum information is chaotically encoded to spread its spectral content, and then decoded via chaos synchronization to separate different sender-receiver pairs. In comparison to other existing approaches, such as frequency division multiple access (FDMA), the proposed q-CDMA can greatly increase the information rates per channel used, especially for very noisy quantum channels.

  10. Quantum internet using code division multiple access

    NASA Astrophysics Data System (ADS)

    Zhang, Jing; Liu, Yu-Xi; Özdemir, Şahin Kaya; Wu, Re-Bing; Gao, Feifei; Wang, Xiang-Bin; Yang, Lan; Nori, Franco

    2013-07-01

    A crucial open problem inS large-scale quantum networks is how to efficiently transmit quantum data among many pairs of users via a common data-transmission medium. We propose a solution by developing a quantum code division multiple access (q-CDMA) approach in which quantum information is chaotically encoded to spread its spectral content, and then decoded via chaos synchronization to separate different sender-receiver pairs. In comparison to other existing approaches, such as frequency division multiple access (FDMA), the proposed q-CDMA can greatly increase the information rates per channel used, especially for very noisy quantum channels.

  11. Quantum internet using code division multiple access

    PubMed Central

    Zhang, Jing; Liu, Yu-xi; Özdemir, Şahin Kaya; Wu, Re-Bing; Gao, Feifei; Wang, Xiang-Bin; Yang, Lan; Nori, Franco

    2013-01-01

    A crucial open problem inS large-scale quantum networks is how to efficiently transmit quantum data among many pairs of users via a common data-transmission medium. We propose a solution by developing a quantum code division multiple access (q-CDMA) approach in which quantum information is chaotically encoded to spread its spectral content, and then decoded via chaos synchronization to separate different sender-receiver pairs. In comparison to other existing approaches, such as frequency division multiple access (FDMA), the proposed q-CDMA can greatly increase the information rates per channel used, especially for very noisy quantum channels. PMID:23860488

  12. Multiple Multi-Qubit Quantum States Sharing

    NASA Astrophysics Data System (ADS)

    Qin, Hua-Wang; Dai, Yue-Wei

    2016-04-01

    A multiple multi-qubit quantum states sharing scheme is proposed, in which the dealer can share multiple multi-qubit quantum states among the participants through only one distribution and one recovery. The dealer encodes the secret quantum states into a special entangled state, and then distributes the particles of the entangled state to the participants. The participants perform the single-particle measurements on their particles, and can cooperate to recover the multiple multi-qubit quantum states. Compared to the existing schemes, our scheme is more efficient and more flexible in practice.

  13. An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: preferential outcoupling of strong in-plane emission (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Kim, Jong Kyu; Lee, Jong Won; Kim, Dong-Yeong; Park, Jun Hyuk; Schubert, E. Fred; Kim, Jungsub; Kim, Yong-Il

    2016-09-01

    AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) are being developed for their numerous applications such as purification of air and water, sterilization in food processing, UV curing, medical-, and defense-related light sources. However, external quantum efficiency (EQE) of AlGaN-based DUV LEDs is very poor (<5% for 250nm) particularly due to low hole concentration and light extraction efficiency (LEE). Conventional LEE-enhancing techniques used for GaInN-based visible LEDs turned out to be ineffective for DUV LEDs due to difference in intrinsic material property between GaInN and AlGaN (Al< 30%). Unlike GaInN visible LEDs, DUV light from a high Al-content AlGaN active region is strongly transverse-magnetic (TM) polarized, that is, the electric field vector is parallel to the (0001) c-axis and shows strong sidewall emission through m- or a-plane due to crystal-field split-off hole band being top most valence band. Therefore, a new LEE-enhancing approach addressing the unique intrinsic property of AlGaN DUV LEDs is strongly desired. In this study, an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells is presented. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage simultaneously. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes to maximize the power conversion efficiency.

  14. Development of ultraviolet electroabsorption modulators and light emitting diodes based on AlGaN alloys

    NASA Astrophysics Data System (ADS)

    Kao, Chen-Kai

    The research in this dissertation addressed the development of ultraviolet (UV) electroabsorption modulators and ultraviolet light emitting diodes (UV-LEDs), covering the spectral range from 360 to 265 nm. The materials system for both types of devices is the AlGaN alloys, either in bulk or quantum well (QW) form, grown by plasma-assisted molecular beam epitaxy (MBE). Potential applications of these devices either individually or in combination include UV non-line-of-sight free-space-optical communications, UV sensing and spectroscopic systems, Q-switched pulsed lasers, water/air purification and various medical applications. Optical modulators based on cubic III-V semiconductors have been the subject of extensive research over the past several years. Such devices are typically based on the quantum-confined Stark effect to modify the absorption spectrum of multiple-quantum-well active regions. On the other hand, in wurtzite III-Nitride semiconductors, strong electric fields are already present in the quantum wells due to intrinsic and piezoelectric polarizations; as a result, an even greater change in absorption is achievable, especially if the internal fields are compensated by the external bias so that the net field in the quantum wells is reduced. A number of UV electroabsorption modulators based on Schottky barriers on bulk GaN and GaN /AlGaN multiple quantum wells (MQWs) were designed, fabricated and characterized. Record modulation ratio of 30 % was obtained from bulk GaN Schottky barrier modulators at the excitonic resonant energy of 3.45 eV (360 nm) upon the application of 12 V reverse bias. Similarly, record modulation ratio of 43% was obtained from GaN / AlGaN MQWs Schottky barrier modulators at the excitonic resonant energy of 3.48 eV (356 nm) upon the application of 17 V reverse bias. The external quantum efficiency (EQE) of AlGaN based deep UV LEDS is relatively low (˜1% at 270 nm). This is generally attributed to the poor internal quantum efficiency

  15. Formation and characteristics of AlGaN-based three-dimensional hexagonal nanopyramid semi-polar multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Tian, Yingdong; Yan, Jianchang; Zhang, Yun; Zhang, Yonghui; Chen, Xiang; Guo, Yanan; Wang, Junxi; Li, Jinmin

    2016-05-01

    We demonstrated for the first time the formation and study of semi-polar AlGaN multiple-quantum-wells (MQWs) grown on highly regular hexagonal AlN nanopyramids. The AlN nanopyramids were obtained by a metal-organic chemical vapor phase deposition regrowth method on a well-ordered AlN nanorod array prepared by a top-down etching process. The growth mechanism of the AlN nanopyramids was ascribed to the slow growth of the (101&cmb.macr;1) semi-polar plane, which resulted from hydrogen passivation. Beneath the semi-polar facets, air voids were formed. This was attributed to the insufficient delivery of gas reactants to the bottom of the nanorods during the growth process. The polarization effect in semi-polar AlGaN MQWs was numerically calculated. The results showed that the internal electric field (IEF) in the semi-polar MQWs was remarkably reduced by 80% in comparison with c-plane MQWs. Power dependent photoluminescence indicated that the semi-polar AlGaN MQWs had negligible wavelength shifts that resulted from the reduced IEF, which was in accordance with theoretical predictions. In addition, epitaxial strain was greatly relieved in the AlN regrowth layer, which was revealed from the peak shift of the E2(high) phonon using micro-Raman spectroscopy. The advantages of AlGaN-based hexagonal nanopyramid semi-polar three dimensional nanostructures would lead to a large improvement of output power in UV-LEDs.

  16. Quantum hyperparallel algorithm for matrix multiplication.

    PubMed

    Zhang, Xin-Ding; Zhang, Xiao-Ming; Xue, Zheng-Yuan

    2016-04-29

    Hyperentangled states, entangled states with more than one degree of freedom, are considered as promising resource in quantum computation. Here we present a hyperparallel quantum algorithm for matrix multiplication with time complexity O(N(2)), which is better than the best known classical algorithm. In our scheme, an N dimensional vector is mapped to the state of a single source, which is separated to N paths. With the assistance of hyperentangled states, the inner product of two vectors can be calculated with a time complexity independent of dimension N. Our algorithm shows that hyperparallel quantum computation may provide a useful tool in quantum machine learning and "big data" analysis.

  17. Quantum hyperparallel algorithm for matrix multiplication

    NASA Astrophysics Data System (ADS)

    Zhang, Xin-Ding; Zhang, Xiao-Ming; Xue, Zheng-Yuan

    2016-04-01

    Hyperentangled states, entangled states with more than one degree of freedom, are considered as promising resource in quantum computation. Here we present a hyperparallel quantum algorithm for matrix multiplication with time complexity O(N2), which is better than the best known classical algorithm. In our scheme, an N dimensional vector is mapped to the state of a single source, which is separated to N paths. With the assistance of hyperentangled states, the inner product of two vectors can be calculated with a time complexity independent of dimension N. Our algorithm shows that hyperparallel quantum computation may provide a useful tool in quantum machine learning and “big data” analysis.

  18. Time-domain multiple-quantum NMR

    SciTech Connect

    Weitekamp, D.P.

    1982-11-01

    The development of time-domain multiple-quantum nuclear magnetic resonance is reviewed through mid 1982 and some prospects for future development are indicated. Particular attention is given to the problem of obtaining resolved, interpretable, many-quantum spectra for anisotropic magnetically isolated systems of coupled spins. New results are presented on a number of topics including the optimization of multiple-quantum-line intensities, analysis of noise in two-dimensional spectroscopy, and the use of order-selective excitation for cross polarization between nuclear-spin species.

  19. Time-Resolved Photoluminescence Studies of InGaN/AlGaN Multiple Quantum Wells

    NASA Astrophysics Data System (ADS)

    Zeng, K. C.; Smith, M.; Lin, J. Y.; Jiang, H. X.; Robert, J. C.; Piner, E. L.; McIntosh, F. G.; Bahbahani, M.; Bedair, S. M.; Zavada, J.

    1997-03-01

    Picosecond time-resolved photoluminescence (PL) spectroscopy has been employed to study the dynamic processes of optical transitions in InGaN/AlGaN multiple quantum wells (MQW) grown by metal-organic chemical vapor deposition (MOCVD). The dynamical behavior of the PL emission reveals that the main emission line in these MQW is the combination of the localized exciton and a band-to-impurity emission lines. The spectral lineshape and the recombination dynamics of the localized exciton and of the band-to-impurity transitions have been systematically investigated at different temperatures and excitation intensities and for MQW with different structures and growth conditions. From these studies, important parameters, including the localization energy and the recombination lifetimes of the localized excitons in InGaN/AlGaN quantum wells, the well width fluctuation, alloy compositions in the well and the barrier materials, and the band offset between InGaN and AlGaN can be deduced. Comparing with time-resolved PL results of InGaN/GaN and GaN/AlGaN MQW, important effects of interface on the optical properties of the III-nitride MQW have been evaluated. Implications of our results to device applications will be discussed.

  20. Selectivity in multiple quantum nuclear magnetic resonance

    SciTech Connect

    Warren, W.S.

    1980-11-01

    The observation of multiple-quantum nuclear magnetic resonance transitions in isotropic or anisotropic liquids is shown to give readily interpretable information on molecular configurations, rates of motional processes, and intramolecular interactions. However, the observed intensity of high multiple-quantum transitions falls off dramatically as the number of coupled spins increases. The theory of multiple-quantum NMR is developed through the density matrix formalism, and exact intensities are derived for several cases (isotropic first-order systems and anisotropic systems with high symmetry) to shown that this intensity decrease is expected if standard multiple-quantum pulse sequences are used. New pulse sequences are developed which excite coherences and produce population inversions only between selected states, even though other transitions are simultaneously resonant. One type of selective excitation presented only allows molecules to absorb and emit photons in groups of n. Coherent averaging theory is extended to describe these selective sequences, and to design sequences which are selective to arbitrarily high order in the Magnus expansion. This theory and computer calculations both show that extremely good selectivity and large signal enhancements are possible.

  1. Subcarrier multiplexing multiple-input multiple-output quantum key distribution scheme with orthogonal quantum states

    NASA Astrophysics Data System (ADS)

    Xiao, Hailin; Zhang, Zhongshan

    2017-01-01

    Quantum key distribution (QKD) system is presently being developed for providing high-security transmission in future free-space optical communication links. However, current QKD technique restricts quantum secure communication to a low bit rate. To improve the QKD bit rate, we propose a subcarrier multiplexing multiple-input multiple-output quantum key distribution (SCM-MQKD) scheme with orthogonal quantum states. Specifically, we firstly present SCM-MQKD system model and drive symmetrical SCM-MQKD system into decoherence-free subspaces. We then utilize bipartite Werner and isotropic states to construct multiple parallel single photon with orthogonal quantum states that are invariant for unitary operations. Finally, we derive the density matrix and the capacity of SCM-MQKD system, respectively. Theoretical analysis and numerical results show that the capacity of SCM-MQKD system will increase {log _2}(N^2+1) times than that of single-photon QKD system.

  2. Determination of gain in AlGaN cladding free nitride laser diodes

    SciTech Connect

    Muziol, G.; Turski, H.; Wolny, P.

    2013-08-05

    The optical gain spectra of InGaN-based multiple-quantum-well (MQW) laser diodes (LDs) grown by plasma-assisted molecular beam epitaxy are compared for different emission wavelengths. Two AlGaN cladding free LDs with similar epitaxial structures but with different In compositions in MQW were grown to study the dependence of material gain on lasing wavelength. As the emission wavelength increased from 432 to 458 nm, the differential modal gain decreased from 5.7 to 4.7 cm/kA, and the optical losses increased from 40 to 46 cm{sup −1} resulting in an increase in threshold current density. This dependence is attributed to lower optical mode confinement of LD emitting at longer wavelength. We found a strong decrease of confinement factor with increasing wavelength.

  3. Spin-orbit interaction in multiple quantum wells

    SciTech Connect

    Hao, Ya-Fei

    2015-01-07

    In this paper, we investigate how the structure of multiple quantum wells affects spin-orbit interactions. To increase the interface-related Rashba spin splitting and the strength of the interface-related Rashba spin-orbit interaction, we designed three kinds of multiple quantum wells. We demonstrate that the structure of the multiple quantum wells strongly affected the interface-related Rashba spin-orbit interaction, increasing the interface-related Rashba spin splitting to up to 26% larger in multiple quantum wells than in a stepped quantum well. We also show that the cubic Dresselhaus spin-orbit interaction similarly influenced the spin relaxation time of multiple quantum wells and that of a stepped quantum well. The increase in the interface-related Rashba spin splitting originates from the relationship between interface-related Rashba spin splitting and electron probability density. Our results suggest that multiple quantum wells can be good candidates for spintronic devices.

  4. Semidirect Products of C*-Quantum Groups: Multiplicative Unitaries Approach

    NASA Astrophysics Data System (ADS)

    Meyer, Ralf; Roy, Sutanu; Woronowicz, Stanisław Lech

    2017-04-01

    C*-quantum groups with projection are the noncommutative analogues of semidirect products of groups. Radford's Theorem about Hopf algebras with projection suggests that any C*-quantum group with projection decomposes uniquely into an ordinary C*-quantum group and a "braided" C*-quantum group. We establish this on the level of manageable multiplicative unitaries.

  5. MULTIPLE-QUANTUM NMR IN SOLIDS

    SciTech Connect

    Yen, Y-S.

    1982-11-01

    Time domain multiple-quantum (MQ) nuclear magnetic resonance (NMR) spectroscopy is a powerful tool for spectral simplification and for providing new information on molecular dynamics. In this thesis, applications of MQ NMR are presented and show distinctly the advantages of this method over the conventional single-quantum NMR. Chapter 1 introduces the spin Hamiltonians, the density matrix formalism and some basic concepts of MQ NMR spectroscopy. In chapter 2, {sup 14}N double-quantum coherence is observed with high sensitivity in isotropic solution, using only the magnetization of bound protons. Spin echoes are used to obtain the homogeneous double-quantum spectrum and to suppress a large H{sub 2}O solvent signal. Chapter 3 resolves the main difficulty in observing high MQ transitions in solids. Due to the profusion of spin transitions in a solid, individual lines are unresolved. Excitation and detection of high quantum transitions by normal schemes are thus difficult. To ensure that overlapping lines add constructively and thereby to enhance sensitivity, time-reversal pulse sequences are used to generate all lines in phase. Up to 22-quantum {sup 1}H absorption in solid adamantane is observed. A time dependence study shows an increase in spin correlations as the excitation time increased. In chapter 4, a statistical theory of MQ second moments is developed for coupled spins of spin I = 1/2. The model reveals that the ratio of the average dipolar coupling to the rms value largely determines the dependence of second moments on the number of quanta. The results of this model are checked against computer-calculated and experimental second moments, and show good agreement. A simple scheme is proposed in chapter 5 for sensitivity improvement in a MQ experiment. The scheme involves acquiring all of the signal energy available in the detection period by applying pulsed spinlocking and sampling between pulses. Using this technique on polycrystalline adamantane, a large

  6. Wafer-scale crack-free AlGaN on GaN through two-step selective-area growth for optically pumped stimulated emission

    NASA Astrophysics Data System (ADS)

    Ko, Young-Ho; Bae, Sung-Bum; Kim, Sung-Bock; Kim, Dong Churl; Leem, Young Ahn; Cho, Yong-Hoon; Nam, Eun-Soo

    2016-07-01

    Crack-free AlGaN template has been successfully grown over entire 2-in. wafer by using 2-step selective-area growth (SAG). The GaN truncated structure was obtained by vertical growth mode with low growth temperature. AlGaN of second step was grown under lateral growth mode. Low pressure enhanced the relative ratio of lateral to vertical growth rate as well as absolute overall growth rate. High V/III ratio was favorable for lateral growth mode. Crack-free planar AlGaN was obtained under low pressure of 30 Torr and high V/III ratio of 4400. The AlGaN was crack-free over entire 2-in. wafer and had quite uniform Al-mole fraction. The dislocation density of the AlGaN with 20% Al-composition was as low as ~7.6×108 /cm2, measured by cathodoluminescence. GaN/AlGaN multi-quantum well (MQW) with cladding and waveguide layers were grown on the crack-free AlGaN template with low dislocation density. It was confirmed that the MQW on the AlGaN template emitted the stimulated emission at 355.5 nm through optical pumping experiment. The AlGaN obtained by 2-step SAG would provide high crystal quality for highly-efficient optoelectronic devices as well as the ultraviolet laser diode.

  7. Multiple network alignment on quantum computers

    NASA Astrophysics Data System (ADS)

    Daskin, Anmer; Grama, Ananth; Kais, Sabre

    2014-12-01

    Comparative analyses of graph-structured datasets underly diverse problems. Examples of these problems include identification of conserved functional components (biochemical interactions) across species, structural similarity of large biomolecules, and recurring patterns of interactions in social networks. A large class of such analyses methods quantify the topological similarity of nodes across networks. The resulting correspondence of nodes across networks, also called node alignment, can be used to identify invariant subgraphs across the input graphs. Given graphs as input, alignment algorithms use topological information to assign a similarity score to each -tuple of nodes, with elements (nodes) drawn from each of the input graphs. Nodes are considered similar if their neighbors are also similar. An alternate, equivalent view of these network alignment algorithms is to consider the Kronecker product of the input graphs and to identify high-ranked nodes in the Kronecker product graph. Conventional methods such as PageRank and HITS (Hypertext-Induced Topic Selection) can be used for this purpose. These methods typically require computation of the principal eigenvector of a suitably modified Kronecker product matrix of the input graphs. We adopt this alternate view of the problem to address the problem of multiple network alignment. Using the phase estimation algorithm, we show that the multiple network alignment problem can be efficiently solved on quantum computers. We characterize the accuracy and performance of our method and show that it can deliver exponential speedups over conventional (non-quantum) methods.

  8. Effects of two-mode transverse optical phonons in bulk wurtzite AlGaN on electronic mobility in AlGaN/GaN quantum wells

    NASA Astrophysics Data System (ADS)

    Gu, Z.; Ban, S. L.; Jiang, D. D.; Qu, Y.

    2017-01-01

    The two-mode property of bulk transverse optical (TO) phonons in ternary mixed crystals of wurtzite AlxGa1-xN has been investigated by introducing impurity modes in a modified random-element isodisplacement model. Based on the dielectric continuous model, the uniaxial model, and the Lei-Ting balance equation, the effects of the two-mode property on electrostatic potentials of interface optical and confined optical phonons in AlGaN/GaN quantum wells, as well as their influences on the electronic mobility (EM), are discussed by a component-dependent weight model. Our results indicate that the total EM decreases to a minimum at first and then increases slowly with x under the influences of the competitions from the eight branches of phonons. The further calculation shows that the total EM decreases with the increment of temperature in the range of 200 K < T < 400 K and reduction of well width d. As a comparison, the EM is calculated for an Al0.58Ga0.42N/GaN quantum well at room temperature, and our result is 1263.0 cm2/Vs, which is 1.44 times of the experiment value. Our result is expected since the difference between our theory and the experiment is mainly due to the neglect of interface-roughness and other secondary scattering mechanisms. Consequently, the two-mode property of bulk TO phonons in ternary mixed crystals does affect obviously on the electron transport in the quantum wells. And our component-dependent weight model could be extended to study the electric properties influenced by optical phonons in other related heterostructures.

  9. Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

    SciTech Connect

    Lekhal, K.; Damilano, B. De Mierry, P.; Vennéguès, P.; Ngo, H. T.; Rosales, D.; Gil, B.; Hussain, S.

    2015-04-06

    Yellow/amber (570–600 nm) emitting In{sub x}Ga{sub 1−x}N/Al{sub y}Ga{sub 1−y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1−x}N QWs by the Al{sub y}Ga{sub 1−y}N layers, respectively.

  10. Blue single photon emission up to 200 K from an InGaN quantum dot in AlGaN nanowire

    NASA Astrophysics Data System (ADS)

    Deshpande, Saniya; Das, Ayan; Bhattacharya, Pallab

    2013-04-01

    We demonstrate polarized blue single photon emission up to 200 K from an In0.2Ga0.8N quantum dot in a single Al0.1Ga0.9N nanowire. The InGaN/AlGaN dot-in-nanowire heterostructure was grown on (111) silicon by plasma assisted molecular beam epitaxy. Nanowires dispersed on a silicon substrate show sharp exciton and biexciton transitions in the micro-photoluminescence spectra. Second-order correlation measurements performed under pulsed excitation at the biexciton wavelength confirm single photon emission, with a g(2)(0) of 0.43 at 200 K. The emitted photons have a short radiative lifetime of 0.7 ns and are linearly polarized along the c-axis of the nanowire with a degree of polarization of 78%.

  11. Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

    SciTech Connect

    Guo, Wei Bryan, Zachary; Kirste, Ronny; Bryan, Isaac; Hussey, Lindsay; Bobea, Milena; Haidet, Brian; Collazo, Ramón; Sitar, Zlatko; Xie, Jinqiao; Mita, Seiji; Gerhold, Michael

    2014-03-14

    Optical gain spectra for ∼250 nm stimulated emission were compared in three different AlGaN-based structures grown on single crystalline AlN substrates: a single AlGaN film, a double heterostructure (DH), and a Multiple Quantum Well (MQW) structure; respective threshold pumping power densities of 700, 250, and 150 kW/cm{sup 2} were observed. Above threshold, the emission was transverse-electric polarized and as narrow as 1.8 nm without a cavity. The DH and MQW structures showed gain values of 50–60 cm{sup −1} when pumped at 1 MW/cm{sup 2}. The results demonstrated the excellent optical quality of the AlGaN-based heterostructures grown on AlN substrates and their potential for realizing electrically pumped sub-280 nm laser diodes.

  12. Multiple-state quantum Otto engine, 1D box system

    NASA Astrophysics Data System (ADS)

    Latifah, E.; Purwanto, A.

    2014-03-01

    Quantum heat engines produce work using quantum matter as their working substance. We studied adiabatic and isochoric processes and defined the general force according to quantum system. The processes and general force are used to evaluate a quantum Otto engine based on multiple-state of one dimensional box system and calculate the efficiency. As a result, the efficiency depends on the ratio of initial and final width of system under adiabatic processes.

  13. Multiple-state quantum Otto engine, 1D box system

    SciTech Connect

    Latifah, E.; Purwanto, A.

    2014-03-24

    Quantum heat engines produce work using quantum matter as their working substance. We studied adiabatic and isochoric processes and defined the general force according to quantum system. The processes and general force are used to evaluate a quantum Otto engine based on multiple-state of one dimensional box system and calculate the efficiency. As a result, the efficiency depends on the ratio of initial and final width of system under adiabatic processes.

  14. Multiple-Particle Interference and Quantum Error Correction

    NASA Astrophysics Data System (ADS)

    Steane, Andrew

    1996-11-01

    The concept of multiple-particle interference is discussed, using insights provided by the classical theory of error correcting codes. This leads to a discussion of error correction in a quantum communication channel or a quantum computer. Methods of error correction in the quantum regime are presented, and their limitations assessed. A quantum channel can recover from arbitrary decoherence of x qubits if K bits of quantum information are encoded using n quantum bits, where K/n can be greater than 1 - 2H (2x/n), but must be less than 1 - 2H (x/n). This implies exponential reduction of decoherence with only a polynomial increase in the computing resources required. Therefore quantum computation can be made free of errors in the presence of physically realistic levels of decoherence. The methods also allow isolation of quantum communication from noise and evesdropping (quantum privacy amplification).

  15. Efficient quantum transmission in multiple-source networks.

    PubMed

    Luo, Ming-Xing; Xu, Gang; Chen, Xiu-Bo; Yang, Yi-Xian; Wang, Xiaojun

    2014-04-02

    A difficult problem in quantum network communications is how to efficiently transmit quantum information over large-scale networks with common channels. We propose a solution by developing a quantum encoding approach. Different quantum states are encoded into a coherent superposition state using quantum linear optics. The transmission congestion in the common channel may be avoided by transmitting the superposition state. For further decoding and continued transmission, special phase transformations are applied to incoming quantum states using phase shifters such that decoders can distinguish outgoing quantum states. These phase shifters may be precisely controlled using classical chaos synchronization via additional classical channels. Based on this design and the reduction of multiple-source network under the assumption of restricted maximum-flow, the optimal scheme is proposed for specially quantized multiple-source network. In comparison with previous schemes, our scheme can greatly increase the transmission efficiency.

  16. Quantum cosmological perturbations of multiple fluids

    NASA Astrophysics Data System (ADS)

    Peter, Patrick; Pinto-Neto, N.; Vitenti, Sandro D. P.

    2016-01-01

    The formalism to treat quantization and evolution of cosmological perturbations of multiple fluids is described. We first construct the Lagrangian for both the gravitational and matter parts, providing the necessary relevant variables and momenta leading to the quadratic Hamiltonian describing linear perturbations. The final Hamiltonian is obtained without assuming any equations of motions for the background variables. This general formalism is applied to the special case of two fluids, having in mind the usual radiation and matter mix which made most of our current Universe history. Quantization is achieved using an adiabatic expansion of the basis functions. This allows for an unambiguous definition of a vacuum state up to the given adiabatic order. Using this basis, we show that particle creation is well defined for a suitable choice of vacuum and canonical variables, so that the time evolution of the corresponding quantum fields is unitary. This provides constraints for setting initial conditions for an arbitrary number of fluids and background time evolution. We also show that the common choice of variables for quantization can lead to an ill-defined vacuum definition. Our formalism is not restricted to the case where the coupling between fields is small, but is only required to vary adiabatically with respect to the ultraviolet modes, thus paving the way to consistent descriptions of general models not restricted to single-field (or fluid).

  17. Quantum broadcasting multiple blind signature with constant size

    NASA Astrophysics Data System (ADS)

    Xiao, Min; Li, Zhenli

    2016-09-01

    Using quantum homomorphic signature in quantum network, we propose a quantum broadcasting multiple blind signature scheme. Different from classical signature and current quantum signature schemes, the multi-signature proposed in our scheme is not generated by simply putting the individual signatures together, but by aggregating the individual signatures based on homomorphic property. Therefore, the size of the multi-signature is constant. Furthermore, based on a wide range of investigation for the security of existing quantum signature protocols, our protocol is designed to resist possible forgery attacks against signature and message from the various attack sources and disavowal attacks from participants.

  18. High-speed solar-blind UV photodetectors using high-Al content Al0.64Ga0.36N/Al0.34Ga0.66N multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Muhtadi, Sakib; Hwang, Seong Mo; Coleman, Antwon L.; Lunev, Alexander; Asif, Fatima; Chava, V. S. N.; Chandrashekhar, M. V. S.; Khan, Asif

    2017-01-01

    We demonstrate high-external quantum efficiency (˜50%) solar-blind AlGaN p-n junction photodetectors with high-Al content multiple quantum wells (MQWs). A peak responsivity of 0.1 A/W at 250 nm, which falls >103 by 280 nm, indicates that the optical absorption is dominated by the MQW structures. At a reverse bias of 0.5 V, the dark current is <0.1 pA. The readout RC-limited time response is measured as 0.4 µs, and an achievable detector RC-limited time response of 2 ns is estimated. The devices do not show internal gain, which accounts for their high speed.

  19. Secure Multiparty Quantum Computation for Summation and Multiplication

    PubMed Central

    Shi, Run-hua; Mu, Yi; Zhong, Hong; Cui, Jie; Zhang, Shun

    2016-01-01

    As a fundamental primitive, Secure Multiparty Summation and Multiplication can be used to build complex secure protocols for other multiparty computations, specially, numerical computations. However, there is still lack of systematical and efficient quantum methods to compute Secure Multiparty Summation and Multiplication. In this paper, we present a novel and efficient quantum approach to securely compute the summation and multiplication of multiparty private inputs, respectively. Compared to classical solutions, our proposed approach can ensure the unconditional security and the perfect privacy protection based on the physical principle of quantum mechanics. PMID:26792197

  20. Secure Multiparty Quantum Computation for Summation and Multiplication

    NASA Astrophysics Data System (ADS)

    Shi, Run-Hua; Mu, Yi; Zhong, Hong; Cui, Jie; Zhang, Shun

    2016-01-01

    As a fundamental primitive, Secure Multiparty Summation and Multiplication can be used to build complex secure protocols for other multiparty computations, specially, numerical computations. However, there is still lack of systematical and efficient quantum methods to compute Secure Multiparty Summation and Multiplication. In this paper, we present a novel and efficient quantum approach to securely compute the summation and multiplication of multiparty private inputs, respectively. Compared to classical solutions, our proposed approach can ensure the unconditional security and the perfect privacy protection based on the physical principle of quantum mechanics.

  1. Quantum filtering for multiple diffusive and Poissonian measurements

    NASA Astrophysics Data System (ADS)

    Emzir, Muhammad F.; Woolley, Matthew J.; Petersen, Ian R.

    2015-09-01

    We provide a rigorous derivation of a quantum filter for the case of multiple measurements being made on a quantum system. We consider a class of measurement processes which are functions of bosonic field operators, including combinations of diffusive and Poissonian processes. This covers the standard cases from quantum optics, where homodyne detection may be described as a diffusive process and photon counting may be described as a Poissonian process. We obtain a necessary and sufficient condition for any pair of such measurements taken at different output channels to satisfy a commutation relationship. Then, we derive a general, multiple-measurement quantum filter as an extension of a single-measurement quantum filter. As an application we explicitly obtain the quantum filter corresponding to homodyne detection and photon counting at the output ports of a beam splitter.

  2. Imaging Quantum Confinement in Multiple Graphene Quantum Dots

    NASA Astrophysics Data System (ADS)

    Wong, Dillon; Velasco, Jairo; Lee, Juwon; Rodriguez-Nieva, Joaquin; Kahn, Salman; Vo, Phong; Tsai, Hsinzon; Taniguchi, Takashi; Watanabe, Kenji; Zettl, Alex; Wang, Feng; Levitov, Leonid; Crommie, Michael

    Quantum dots provide a useful means for controlling the electronic and spin degrees of freedom of mesoscale and nanoscale materials. Here we demonstrate a new method for fabricating interacting graphene quantum dots that is compatible with electrostatic gating and visualization by way of scanning tunneling microscopy (STM). Using this new technique we have created and spatially characterized systems of two or more interacting quantum dots. Our results show that it is possible to engineer electronic wave functions in graphene with a high degree of spatial control.

  3. Effect of Multiple Scattering in a Quantum Well

    NASA Astrophysics Data System (ADS)

    Sheng, Hanyu; Chua, Soo-Jin; Sinkkonen, Juha

    This paper gives a potentially useful application to quantum well of the theory of scattering in the Born approximation. The simple formulae for multiple scattering in a quantum well of double barrier structure are derived. The multiple scattering parameter is the complex mean free path. We show that the amplitude of the coherent wave will be exponentially attenuated and the phase of the wave will be delayed because of the scattering.

  4. Computer studies of multiple-quantum spin dynamics

    SciTech Connect

    Murdoch, J.B.

    1982-11-01

    The excitation and detection of multiple-quantum (MQ) transitions in Fourier transform NMR spectroscopy is an interesting problem in the quantum mechanical dynamics of spin systems as well as an important new technique for investigation of molecular structure. In particular, multiple-quantum spectroscopy can be used to simplify overly complex spectra or to separate the various interactions between a nucleus and its environment. The emphasis of this work is on computer simulation of spin-system evolution to better relate theory and experiment.

  5. Frequency domain quantum optimal control under multiple constraints

    NASA Astrophysics Data System (ADS)

    Shu, Chuan-Cun; Ho, Tak-San; Xing, Xi; Rabitz, Herschel

    2016-03-01

    Optimal control of quantum systems with complex constrained external fields is one of the longstanding theoretical and numerical challenges at the frontier of quantum control research. Here, we present a theoretical method that can be utilized to optimize the control fields subject to multiple constraints while guaranteeing monotonic convergence towards desired physical objectives. This optimization method is formulated in the frequency domain in line with the current ultrafast pulse shaping technique, providing the possibility for performing quantum optimal control simulations and experiments in a unified fashion. For illustrations, this method is successfully employed to perform multiple constraint spectral-phase-only optimization for maximizing resonant multiphoton transitions with desired pulses.

  6. Study of correlations in molecular motion by multiple quantum NMR

    SciTech Connect

    Tang, J.H.

    1981-11-01

    Nuclear magnetic resonance is a very useful tool for characterizing molecular configurations through the measurement of transition frequencies and dipolar couplings. The measurement of spectral lineshapes, spin-lattice relaxation times, and transverse relaxation times also provide us with valuable information about correlations in molecular motion. The new technique of multiple quantum nuclear magnetic resonance has numerous advantages over the conventional single quantum NMR techniques in obtaining information about static and dynamic interactions of coupled spin systems. In the first two chapters, the theoretical background of spin Hamiltonians and the density matrix formalism of multiple quantum NMR is discussed. The creation and detection of multiple quantum coherence by multiple pulse sequence are discussed. Prototype multiple quantum spectra of oriented benzene are presented. Redfield relaxation theory and the application of multiple quantum NMR to the study of correlations in fluctuations are presented. A specific example of an oriented methyl group relaxed by paramagnetic impurities is studied in detail. The study of possible correlated motion between two coupled methyl groups by multiple quantum NMR is presented. For a six spin system it is shown that the four-quantum spectrum is sensitive to two-body correlations, and serves a ready test of correlated motion. The study of the spin-lattice dynamics of orienting or tunneling methyl groups (CH/sub 3/ and CD/sub 3/) at low temperatures is presented. The anisotropic spin-lattice relaxation of deuterated hexamethylbenzene, caused by the sixfold reorientation of the molecules, is investigated, and the NMR spectrometers and other experimental details are discussed.

  7. Radiation Hard AlGaN Detectors and Imager

    SciTech Connect

    2012-05-01

    Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

  8. Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier

    NASA Astrophysics Data System (ADS)

    Jia, Chuanyu; Yu, Tongjun; Feng, Xiaohui; Wang, Kun; Zhang, Guoyi

    2016-09-01

    The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL.

  9. Optimum testing of multiple hypotheses in quantum detection theory

    NASA Technical Reports Server (NTRS)

    Yuen, H. P.; Kennedy, R. S.; Lax, M.

    1975-01-01

    The problem of specifying the optimum quantum detector in multiple hypotheses testing is considered for application to optical communications. The quantum digital detection problem is formulated as a linear programming problem on an infinite-dimensional space. A necessary and sufficient condition is derived by the application of a general duality theorem specifying the optimum detector in terms of a set of linear operator equations and inequalities. Existence of the optimum quantum detector is also established. The optimality of commuting detection operators is discussed in some examples. The structure and performance of the optimal receiver are derived for the quantum detection of narrow-band coherent orthogonal and simplex signals. It is shown that modal photon counting is asymptotically optimum in the limit of a large signaling alphabet and that the capacity goes to infinity in the absence of a bandwidth limitation.

  10. Multiple quantum magic-angle spinning using rotary resonance excitation

    NASA Astrophysics Data System (ADS)

    Vosegaard, Thomas; Florian, Pierre; Massiot, Dominique; Grandinetti, Philip J.

    2001-03-01

    We have discovered rotary resonances between rf field strength, ω1, and magic-angle spinning (MAS) frequency, ωR, which dramatically enhance the sensitivity of triple quantum preparation and mixing in the multiple-quantum MAS experiment, particularly for quadrupolar nuclei having low gyromagnetic ratios or experiencing strong quadrupole couplings. Triple quantum excitation efficiency minima occur when 2ω1=nωR, where n is an integer, with significant maxima occurring between these minima. For triple quantum mixing we observe maxima when ω1=nωR. In both preparation and mixing the pulse lengths required to reach maxima exceed one rotor period. We have combined these rotary resonance conditions into a new experiment called FASTER MQ-MAS, and have experimentally demonstrated a factor of 3 enhancement in sensitivity in comparison to conventional MQ-MAS.

  11. Gaussian systems for quantum-enhanced multiple phase estimation

    NASA Astrophysics Data System (ADS)

    Gagatsos, Christos N.; Branford, Dominic; Datta, Animesh

    2016-10-01

    For a fixed average energy, the simultaneous estimation of multiple phases can provide a better total precision than estimating them individually. We show this for a multimode interferometer with a phase in each mode, using Gaussian inputs and passive elements, by calculating the covariance matrix. The quantum Cramér-Rao bound provides a lower bound to the covariance matrix via the quantum Fisher information matrix, whose elements we derive to be the covariances of the photon numbers across the modes. We prove that this bound can be saturated. In spite of the Gaussian nature of the problem, the calculation of non-Gaussian integrals is required, which we accomplish analytically. We find our simultaneous strategy to yield no more than a factor-of-2 improvement in total precision, possibly because of a fundamental performance limitation of Gaussian states. Our work shows that no modal entanglement is necessary for simultaneous quantum-enhanced estimation of multiple phases.

  12. Multiple Quantum Wells for P T -Symmetric Phononic Crystals

    NASA Astrophysics Data System (ADS)

    Poshakinskiy, A. V.; Poddubny, A. N.; Fainstein, A.

    2016-11-01

    We demonstrate that the parity-time symmetry for sound is realized in laser-pumped multiple-quantum-well structures. Breaking of the parity-time symmetry for the phonons with wave vectors corresponding to the Bragg condition makes the structure a highly selective acoustic wave amplifier. Single-mode distributed feedback phonon lasing is predicted for structures with realistic parameters.

  13. Detection of electromagnetic radiation using micromechanical multiple quantum wells structures

    DOEpatents

    Datskos, Panagiotis G [Knoxville, TN; Rajic, Slobodan [Knoxville, TN; Datskou, Irene [Knoxville, TN

    2007-07-17

    An apparatus and method for detecting electromagnetic radiation employs a deflectable micromechanical apparatus incorporating multiple quantum wells structures. When photons strike the quantum-well structure, physical stresses are created within the sensor, similar to a "bimetallic effect." The stresses cause the sensor to bend. The extent of deflection of the sensor can be measured through any of a variety of conventional means to provide a measurement of the photons striking the sensor. A large number of such sensors can be arranged in a two-dimensional array to provide imaging capability.

  14. Multiple-junction quantum cascade photodetectors for thermophotovoltaic energy conversion.

    PubMed

    Yin, Jian; Paiella, Roberto

    2010-01-18

    The use of intersubband transitions in quantum cascade structures for thermophotovoltaic energy conversion is investigated numerically. The intrinsic cascading scheme, spectral agility, and design flexibility of these structures make them ideally suited to the development of high efficiency multiple-junction thermophotovoltaic detectors. A specific implementation of this device concept is designed, based on bound-to-continuum intersubband transitions in large-conduction-band-offset In(0.7)Ga(0.3)As/AlAs(0.8)Sb(0.2) quantum wells. The device electrical characteristics in the presence of thermal radiation from a blackbody source at 1300 K are calculated, from which a maximum extracted power density of 1.4 W/cm(2) is determined. This value compares favorably with the present state-of-the-art in interband thermophotovoltaic energy conversion, indicating that quantum cascade photodetectors may provide a promising approach to improve energy extraction from thermal sources.

  15. Controllable multiple-quantum transitions in a T-shaped small quantum dot-ring system

    NASA Astrophysics Data System (ADS)

    Chen, Xiongwen; Chen, Baoju; Song, Kehui; Zhou, Guanghui

    2016-05-01

    Based on the tight-binding model and the slave boson mean field approximation, we investigate the electron transport properties in a small quantum dot (QD)-ring system. Namely, a strongly correlated QD not only attaches directly to two normal metallic electrodes, but also forms a magnetic control Aharonov-Bohm quantum ring with a few noninteracting QDs. We show that the parity effect, the Kondo effect, and the multiple Fano effects coexist in our system. Moreover, the parities, defined by the odd- and even-numbered energy levels in this system, can be switched by adjusting magnetic flux phase ϕ located at the center of the quantum ring, which induces multiple controllable Fano-interference energy pathways. Therefore, the constructive and destructive multi-Fano interference transition, the Kondo and Fano resonance transition at the Fermi level, the Fano resonance and ani-resonance transition are realized in the even parity system. They can also be observed in the odd parity system when one adjusts the phase ϕ and the gate voltage Vg applied to the noninteracting QDs. The multi-quantum transitions determine some interesting transport properties such as the current switch and its multi-flatsteps, the differential conductance switch at zero bias voltage and its oscillation or quantization at the low bias voltage. These results may be useful for the observation of multiple quantum effect interplays experimentally and the design of controllable QD-based device.

  16. Multiple Potts models coupled to two-dimensional quantum gravity

    NASA Astrophysics Data System (ADS)

    Baillie, C. F.; Johnston, D. A.

    1992-07-01

    We perform Monte Carlo simulations using the Wolff cluster algorithm of multiple q=2, 3, 4 state Potts models on dynamical phi-cubed graphs of spherical topology in order to investigate the c>1 region of two-dimensional quantum gravity. Contrary to naive expectation we find no obvious signs of pathological behaviour for c>1. We discuss the results in the light of suggestions that have been made for a modified DDK ansatz for c>1.

  17. Improvement of a quantum broadcasting multiple blind signature scheme based on quantum teleportation

    NASA Astrophysics Data System (ADS)

    Zhang, Wei; Qiu, Daowen; Zou, Xiangfu

    2016-06-01

    Recently, a broadcasting multiple blind signature scheme based on quantum teleportation has been proposed for the first time. It is claimed to have unconditional security and properties of quantum multiple signature and quantum blind signature. In this paper, we analyze the security of the protocol and show that each signatory can learn the signed message by a single-particle measurement and the signed message can be modified at random by any attacker according to the scheme. Furthermore, there are some participant attacks and external attacks existing in the scheme. Finally, we present an improved scheme and show that it can resist all of the mentioned attacks. Additionally, the secret keys can be used again and again, making it more efficient and practical.

  18. A broadcasting multiple blind signature scheme based on quantum GHZ entanglement

    NASA Astrophysics Data System (ADS)

    Tian, Yuan; Chen, Hong; Gao, Yan; Zhuang, Honglin; Lian, Haigang; Han, Zhengping; Yu, Peng; Kong, Xiangze; Wen, Xiaojun

    2014-09-01

    Using the correlation of the GHZ triplet states, a broadcasting multiple blind signature scheme is proposed. Different from classical multiple signature and current quantum signature schemes, which could only deliver either multiple signature or unconditional security, our scheme guarantees both by adopting quantum key preparation, quantum encryption algorithm and quantum entanglement. Our proposed scheme has the properties of multiple signature, blindness, non-disavowal, non-forgery and traceability. To the best of our knowledge, we are the first to propose the broadcasting multiple blind signature of quantum cryptography.

  19. Robust Multiple-Range Coherent Quantum State Transfer

    NASA Astrophysics Data System (ADS)

    Chen, Bing; Peng, Yan-Dong; Li, Yong; Qian, Xiao-Feng

    2016-07-01

    We propose a multiple-range quantum communication channel to realize coherent two-way quantum state transport with high fidelity. In our scheme, an information carrier (a qubit) and its remote partner are both adiabatically coupled to the same data bus, i.e., an N-site tight-binding chain that has a single defect at the center. At the weak interaction regime, our system is effectively equivalent to a three level system of which a coherent superposition of the two carrier states constitutes a dark state. The adiabatic coupling allows a well controllable information exchange timing via the dark state between the two carriers. Numerical results show that our scheme is robust and efficient under practically inevitable perturbative defects of the data bus as well as environmental dephasing noise.

  20. Thermodynamics of quantum systems with multiple conserved quantities

    PubMed Central

    Guryanova, Yelena; Popescu, Sandu; Short, Anthony J.; Silva, Ralph; Skrzypczyk, Paul

    2016-01-01

    Recently, there has been much progress in understanding the thermodynamics of quantum systems, even for small individual systems. Most of this work has focused on the standard case where energy is the only conserved quantity. Here we consider a generalization of this work to deal with multiple conserved quantities. Each conserved quantity, which, importantly, need not commute with the rest, can be extracted and stored in its own battery. Unlike the standard case, in which the amount of extractable energy is constrained, here there is no limit on how much of any individual conserved quantity can be extracted. However, other conserved quantities must be supplied, and the second law constrains the combination of extractable quantities and the trade-offs between them. We present explicit protocols that allow us to perform arbitrarily good trade-offs and extract arbitrarily good combinations of conserved quantities from individual quantum systems. PMID:27384384

  1. Robust Multiple-Range Coherent Quantum State Transfer

    PubMed Central

    Chen, Bing; Peng, Yan-Dong; Li, Yong; Qian, Xiao-Feng

    2016-01-01

    We propose a multiple-range quantum communication channel to realize coherent two-way quantum state transport with high fidelity. In our scheme, an information carrier (a qubit) and its remote partner are both adiabatically coupled to the same data bus, i.e., an N-site tight-binding chain that has a single defect at the center. At the weak interaction regime, our system is effectively equivalent to a three level system of which a coherent superposition of the two carrier states constitutes a dark state. The adiabatic coupling allows a well controllable information exchange timing via the dark state between the two carriers. Numerical results show that our scheme is robust and efficient under practically inevitable perturbative defects of the data bus as well as environmental dephasing noise. PMID:27364891

  2. Compositional inhomogeneities in AlGaN thin films grown by molecular beam epitaxy: Effect on MSM UV photodetectors

    NASA Astrophysics Data System (ADS)

    Pramanik, Pallabi; Sen, Sayantani; Singha, Chirantan; Roy, Abhra Shankar; Das, Alakananda; Sen, Susanta; Bhattacharyya, A.

    2016-10-01

    Ultraviolet (UV) MSM photodetectors (PD) based on AlGaN alloys find many applications, including flame sensing. In this work we investigate the dependence of AlGaN based photodetectors grown by MBE on the kinetics of growth. MSM photodetectors were fabricated in the interdigitated configuration with Ni/Au contacts having 400 μm finger length and 10 μm finger spacing. Bulk Al0.4Ga0.6N films were grown on to sapphire substrates using an AlN buffer layer. A series of PDs were developed using the Al0.4Ga0.6N films grown under different group III/V flux ratios ranging from stoichiometric conditions to much higher than unity. Upon testing, it was observed that the otherwise identical photodetectors show significant decrease in dark current as AlGaN deposition conditions change from stoichiometric to excess group III, due to reduction of unintentional incorporation of oxygen-related point defects. In addition, the intensity and spectral dependence of the photocurrent also change, showing an extended low energy tail for the former and a sharp and prominent excitonic peak for the latter. The optical transmission measurements indicate a variation in Urbach energy with deposition conditions of the AlGaN films, although they have the same absorption edge. While all samples show a single red-shifted photoluminescence peak at room temperature, upon cooling, multiple higher energy peaks appear in the photoluminescence (PL) spectra, indicating that the alloys contain complex compositional inhomogeneities. Two types of alloy fluctuations, determined by the growth conditions, have been identified that modulate the optoelectronic properties of AlGaN by changing the spatial localization of excitons, thereby altering their stability. We identified that growth under stoichiometric conditions leads to compositional inhomogeneities that play a detrimental role in the operation of MSM photodetectors, which reduces the sharpness of the sensitivity edge, while growth under excess metal

  3. Quantum transport in multiple-barrier resonant-tunneling devices

    NASA Astrophysics Data System (ADS)

    Newaz, A. K. M.

    I have studied experimentally the quantum transport in multiple-barrier resonant-tunneling devices, namely double-barrier resonant-tunneling diodes (DBRTD) and triple-barrier resonant-tunneling diodes (TBRTD), to understand the tunneling processes in multiple-barrier resonant structures. We have performed various types of transport measurements, such as current, conductance, resonant magnetotunneling spectroscopy and shot noise measurements at low temperature (T=4.2K). To test the validity of the in-plane momentum conservation rule when electrons tunnel through a multiple-barrier resonant-tunneling device, I have studied in details the current and conductance with and without magnetic field perpendicular to the interfaces. We have found conclusive evidence that though this conservation rule governs the tunneling processes in DBRTD, the conservation rule breaks down in TBRTD. In addition, I have observed profound effect of nonparabolicity in the tunneling processes. By measuring the shot noise in TBRTDs at low temperature, I have found that the shot noise in a TBRTD is reduced over the Poissonian value, 2 eI, whenever the differential conductance is positive and is enhanced over 2eI when the differential conductance is negative. This behavior, although qualitatively similar to that found in DBRTD, differs from it in important details. In TBRTDs the noise reduction is considerably greater than that predicted by a semiclassical model, and the enhancement does not correlate with the strength of the negative differential conductance. Moreover, I have not observed any signature of the effect of the coherent tunneling on the shot noise suppression in coherently coupled TBRTDs. This suggests that the phase coherence does not have any effect on the shot noise suppression. On the other hand, the failure of a semiclassical model to explain shot noise suppression suggests an incomplete understanding of the noise properties of multiple-barrier heterostructures and a need for

  4. Development of GaN/AlGaN Terahertz Quantum Cascade Laser

    DTIC Science & Technology

    2008-11-19

    AFOSR-Taiwan Nanoscience Initiative Project Final Report Project Title Development of GaN /AlGaN Terahertz Quantum Cascade Laser...DATES COVERED 14-06-2007 to 13-06-2008 4. TITLE AND SUBTITLE Development of GaN -Based Terahertz Quantum Cascade Laser 5a. CONTRACT NUMBER...the GaN /AlGaN active region for terahertz quantum cascade lasers using MOCVD system based on the quantum cascade structure proposed by Prof. Greg Sun

  5. Coherent nanocavity structures for enhancement in internal quantum efficiency of III-nitride multiple quantum wells

    SciTech Connect

    Kim, T.; Liu, B.; Smith, R.; Athanasiou, M.; Gong, Y.; Wang, T.

    2014-04-21

    A “coherent” nanocavity structure has been designed on two-dimensional well-ordered InGaN/GaN nanodisk arrays with an emission wavelength in the green spectral region, leading to a massive enhancement in resonance mode in the green spectra region. By means of a cost-effective nanosphere lithography technique, we have fabricated such a structure on an InGaN/GaN multiple quantum well epiwafer and have observed the “coherent” nanocavity effect, which leads to an enhanced spontaneous emission (SE) rate. The enhanced SE rate has been confirmed by time resolved photoluminescence measurements. Due to the coherent nanocavity effect, we have achieved a massive improvement in internal quantum efficiency with a factor of 88, compared with the as-grown sample, which could be significant to bridge the “green gap” in solid-state lighting.

  6. Electron-interface phonon interaction in multiple quantum well structures

    NASA Astrophysics Data System (ADS)

    Sun, J. P.; Teng, H. B.; Haddad, G. I.; Stroscio, M. A.

    1998-08-01

    Intersubband relaxation rates due to electron interactions with the interface phonons are evaluated for multiple quantum well structures designed for step quantum well lasers operating at mid-infrared to submillimetre wavelengths. The interface phonon modes and electron-phonon interaction Hamiltonians for the structures are derived using the transfer matrix method, based on the macroscopic dielectric continuum model, whereas the electron wavefunctions are obtained by solving the Schrödinger equation. Fermi's golden rule is employed to calculate the electron relaxation rates between the subbands in these structures. The relaxation rates for two different structures are examined and compared with those calculated using the bulk phonon modes and the Fröhlich interaction Hamiltonian. The sum rule for the relationship between the form factors of the various localized phonon modes and the bulk phonon modes is verified. The results obtained in this work illustrate that the transfer matrix method provides a convenient way for deriving the properties of the interface phonon modes in different structures of current interest and that, for preferential electron relaxation in intersubband laser structures, the effects of the interface phonon modes are significant and should be considered for optimal design of these laser structures.

  7. Multiple particle production processes in the light'' of quantum optics

    SciTech Connect

    Friedlander, E.M.

    1990-09-01

    Ever since the observation that high-energy nuclear active'' cosmic-ray particles create bunches of penetrating particles upon hitting targets, a controversy has raged about whether these secondaries are created in a single act'' or whether many hadrons are just the result of an intra-nuclear cascade, yielding one meson in every step. I cannot escape the impression that: the latter kind of model appeals naturally as a consequence of an innate bio-morphism in our way of thinking and that in one guise or another it has tenaciously survived to this day, also for hadron-hadron collisions, via multi-peripheral models to the modern parton shower approach. Indeed, from the very beginning of theoretical consideration of multiparticle production, the possibility of many particles arising from a single hot'' system has been explored, with many fruitful results, not the least of which are the s{sup 1/4} dependence of the mean produced particle multiplicity and the thermal'' shape of the P{sub T} spectra. An important consequence of the thermodynamical-hydrodynamical models is that particle emission is treated in analogy to black-body radiation, implying for the secondaries a set of specific Quantum-Statistical properties, very similar to those observed in quantum optics. From here on I shall try to review a number of implications and applications of this QS analogy in the study of multiplicity distributions of the produced secondaries. I will touch only in passing another very important topic of this class, the Bose-Einstein two-particle correlations.

  8. Enhancement of blue InGaN light-emitting diodes by using AlGaN increased composition-graded barriers

    NASA Astrophysics Data System (ADS)

    Yan, Lei; Zhiqiang, Liu; Miao, He; Xiaoyan, Yi; Junxi, Wang; Jinmin, Li; Shuwen, Zheng; Shuti, Li

    2015-05-01

    The characteristics of nitride-based blue light-emitting diodes (LEDs) with AlGaN composition-graded barriers are analyzed numerically. The carrier concentrations in the quantum wells (QWs), the energy band diagrams, the electrostatic fields, and the light output power are investigated by APSYS software. The simulation results show that the LED with AlGaN composition-graded barriers has a better performance than its AlGaN/InGaN counterpart owing to the increase of hole injection and the enhancement of electron confinement. The simulation results also suggest that the output power is enhanced significantly and the efficiency droop is markedly improved when the AlGaN barriers are replaced by AlGaN composition-graded barriers. Project supported by the National High Technology Program of China (Nos. 2011AA03A105, 2013AA03A101), the National Natural Science Foundation of China (Nos. 61306051, 61306050, 11474105), the Beijing Municipal Science and Technology Project (No. D12110300140000), the National Basic Research Program of China (No. 2011CB301902), the Industry-Academia-Research Union Special Fund of Guangdong Province of China (No. 2012B091000169), the Science & Technology Innovation Platform of Industry-Academia-Research Union of Guangdong Province-Ministry Cooperation Special Fund of China (No. 2012B090600038), the Specialized Research Fund for the Doctoral Program of Higher Education (No. 20134407110008), and the Science research innovation foundation of South China Normal University of China (No. 2013kyjj041).

  9. Ab initio multiple cloning algorithm for quantum nonadiabatic molecular dynamics.

    PubMed

    Makhov, Dmitry V; Glover, William J; Martinez, Todd J; Shalashilin, Dmitrii V

    2014-08-07

    We present a new algorithm for ab initio quantum nonadiabatic molecular dynamics that combines the best features of ab initio Multiple Spawning (AIMS) and Multiconfigurational Ehrenfest (MCE) methods. In this new method, ab initio multiple cloning (AIMC), the individual trajectory basis functions (TBFs) follow Ehrenfest equations of motion (as in MCE). However, the basis set is expanded (as in AIMS) when these TBFs become sufficiently mixed, preventing prolonged evolution on an averaged potential energy surface. We refer to the expansion of the basis set as "cloning," in analogy to the "spawning" procedure in AIMS. This synthesis of AIMS and MCE allows us to leverage the benefits of mean-field evolution during periods of strong nonadiabatic coupling while simultaneously avoiding mean-field artifacts in Ehrenfest dynamics. We explore the use of time-displaced basis sets, "trains," as a means of expanding the basis set for little cost. We also introduce a new bra-ket averaged Taylor expansion (BAT) to approximate the necessary potential energy and nonadiabatic coupling matrix elements. The BAT approximation avoids the necessity of computing electronic structure information at intermediate points between TBFs, as is usually done in saddle-point approximations used in AIMS. The efficiency of AIMC is demonstrated on the nonradiative decay of the first excited state of ethylene. The AIMC method has been implemented within the AIMS-MOLPRO package, which was extended to include Ehrenfest basis functions.

  10. Ab initio multiple cloning algorithm for quantum nonadiabatic molecular dynamics

    SciTech Connect

    Makhov, Dmitry V.; Shalashilin, Dmitrii V.; Glover, William J.; Martinez, Todd J.

    2014-08-07

    We present a new algorithm for ab initio quantum nonadiabatic molecular dynamics that combines the best features of ab initio Multiple Spawning (AIMS) and Multiconfigurational Ehrenfest (MCE) methods. In this new method, ab initio multiple cloning (AIMC), the individual trajectory basis functions (TBFs) follow Ehrenfest equations of motion (as in MCE). However, the basis set is expanded (as in AIMS) when these TBFs become sufficiently mixed, preventing prolonged evolution on an averaged potential energy surface. We refer to the expansion of the basis set as “cloning,” in analogy to the “spawning” procedure in AIMS. This synthesis of AIMS and MCE allows us to leverage the benefits of mean-field evolution during periods of strong nonadiabatic coupling while simultaneously avoiding mean-field artifacts in Ehrenfest dynamics. We explore the use of time-displaced basis sets, “trains,” as a means of expanding the basis set for little cost. We also introduce a new bra-ket averaged Taylor expansion (BAT) to approximate the necessary potential energy and nonadiabatic coupling matrix elements. The BAT approximation avoids the necessity of computing electronic structure information at intermediate points between TBFs, as is usually done in saddle-point approximations used in AIMS. The efficiency of AIMC is demonstrated on the nonradiative decay of the first excited state of ethylene. The AIMC method has been implemented within the AIMS-MOLPRO package, which was extended to include Ehrenfest basis functions.

  11. Irreducible Tensor Operators and Multiple-Quantum NMR.

    NASA Astrophysics Data System (ADS)

    Hutchison, Wayne Douglas

    The aim of the work detailed in this thesis, is to provide a concise, and illuminating, mathematical description of multiple quantum nuclear magnetic resonance (MQNMR) experiments, on essentially isolated (non-coupled) nuclei. The treatment used is based on irreducible tensor operators, which form an orthonormal basis set. Such operators can be used to detail the state of the nuclear ensemble (density matrix) during every stage, preparation, evolution and detection, of a MQNMR experiment. Moreover, such operators can be also used to provide a rigorous analysis of pulsed NMR experiments, on oriented nuclei at low temperatures, where the initial density matrix is far from trivial. The specific topics dealt with in this thesis are as follows. In the first place the properties of irreducible tensor operators are discussed in some detail. In particular, symmetric and anti-symmetric combinations of tensor operators are introduced, to reflect the Hermitian nature of the nuclear Hamiltonian and density matrix. Secondly, the creation of multipolar nuclear states using hard, non-selective rf pulses, is detailed for spin I = 1, 3/2, 2 and 5/2 nuclei, subject to an axially symmetric quadrupole interaction. Results are also given for general I. Thirdly, some experimental results, verifying the production of a triple quantum NMR state, for the I = 3/2 ^{23}Na nuclei in a single crystal of NaIO_4 are presented and discussed. Fourthly, the treatment of MQNMR experiments is extended to the low temperature regime where the initial density matrix includes Fano statistical tensors other than rank one. In particular, it is argued that MQNMR techniques could be used to enhance the anisotropy of gamma-ray emission from oriented nuclei at low temperatures. Fifthly, the effect of a more general quadrupole Hamiltonian (including an asymmetry term) on MQNMR experiments is considered for spins I = 1 and 3/2. In particular, it is shown that double quantum states evolve to give longitudinal NMR

  12. Extreme Radiation Hardness and Space Qualification of AlGaN Optoelectronic Devices

    SciTech Connect

    Sun, Ke-Xun; Balakrishnan, Kathik; Hultgren, Eric; Goebel, John; Bilenko, Yuri; Yang, Jinwei; Sun, Wenhong; Shatalov, Max; Hu, Xuhong; Gaska, Remis

    2010-09-21

    Unprecedented radiation hardness and environment robustness are required in the new generation of high energy density physics (HEDP) experiments and deep space exploration. National Ignition Facility (NIF) break-even shots will have a neutron yield of 1015 or higher. The Europa Jupiter System Mission (EJSM) mission instruments will be irradiated with a total fluence of 1012 protons/cm2 during the space journey. In addition, large temperature variations and mechanical shocks are expected in these applications under extreme conditions. Hefty radiation and thermal shields are required for Si and GaAs based electronics and optoelectronics devices. However, for direct illumination and imaging applications, shielding is not a viable option. It is an urgent task to search for new semiconductor technologies and to develop radiation hard and environmentally robust optoelectronic devices. We will report on our latest systematic experimental studies on radiation hardness and space qualifications of AlGaN optoelectronic devices: Deep UV Light Emitting Diodes (DUV LEDs) and solarblind UV Photodiodes (PDs). For custom designed AlGaN DUV LEDs with a central emission wavelength of 255 nm, we have demonstrated its extreme radiation hardness up to 2x1012 protons/cm2 with 63.9 MeV proton beams. We have demonstrated an operation lifetime of over 26,000 hours in a nitrogen rich environment, and 23,000 hours of operation in vacuum without significant power drop and spectral shift. The DUV LEDs with multiple packaging styles have passed stringent space qualifications with 14 g random vibrations, and 21 cycles of 100K temperature cycles. The driving voltage, current, emission spectra and optical power (V-I-P) operation characteristics exhibited no significant changes after the space environmental tests. The DUV LEDs will be used for photoelectric charge management in space flights. For custom designed AlGaN UV photodiodes with a central response wavelength of 255 nm, we have demonstrated

  13. Experimental realization of entanglement in multiple degrees of freedom between two quantum memories

    PubMed Central

    Zhang, Wei; Ding, Dong-Sheng; Dong, Ming-Xin; Shi, Shuai; Wang, Kai; Liu, Shi-Long; Li, Yan; Zhou, Zhi-Yuan; Shi, Bao-Sen; Guo, Guang-Can

    2016-01-01

    Entanglement in multiple degrees of freedom has many benefits over entanglement in a single one. The former enables quantum communication with higher channel capacity and more efficient quantum information processing and is compatible with diverse quantum networks. Establishing multi-degree-of-freedom entangled memories is not only vital for high-capacity quantum communication and computing, but also promising for enhanced violations of nonlocality in quantum systems. However, there have been yet no reports of the experimental realization of multi-degree-of-freedom entangled memories. Here we experimentally established hyper- and hybrid entanglement in multiple degrees of freedom, including path (K-vector) and orbital angular momentum, between two separated atomic ensembles by using quantum storage. The results are promising for achieving quantum communication and computing with many degrees of freedom. PMID:27841274

  14. Experimental realization of entanglement in multiple degrees of freedom between two quantum memories.

    PubMed

    Zhang, Wei; Ding, Dong-Sheng; Dong, Ming-Xin; Shi, Shuai; Wang, Kai; Liu, Shi-Long; Li, Yan; Zhou, Zhi-Yuan; Shi, Bao-Sen; Guo, Guang-Can

    2016-11-14

    Entanglement in multiple degrees of freedom has many benefits over entanglement in a single one. The former enables quantum communication with higher channel capacity and more efficient quantum information processing and is compatible with diverse quantum networks. Establishing multi-degree-of-freedom entangled memories is not only vital for high-capacity quantum communication and computing, but also promising for enhanced violations of nonlocality in quantum systems. However, there have been yet no reports of the experimental realization of multi-degree-of-freedom entangled memories. Here we experimentally established hyper- and hybrid entanglement in multiple degrees of freedom, including path (K-vector) and orbital angular momentum, between two separated atomic ensembles by using quantum storage. The results are promising for achieving quantum communication and computing with many degrees of freedom.

  15. Single-photon quantum router with multiple output ports.

    PubMed

    Yan, Wei-Bin; Fan, Heng

    2014-04-28

    The routing capability is a requisite in quantum network. Although the quantum routing of signals has been investigated in various systems both in theory and experiment, the general form of quantum routing with many output terminals still needs to be explored. Here we propose a scheme to achieve the multi-channel quantum routing of the single photons in a waveguide-emitter system. The channels are composed by the waveguides and are connected by intermediate two-level emitters. By adjusting the intermediate emitters, the output channels of the input single photons can be controlled. This is demonstrated in the cases of one output channel, two output channels and the generic N output channels. The results show that the multi-channel quantum routing of single photons can be well achieved in the proposed system. This offers a scheme for the experimental realization of general quantum routing of single photons.

  16. Multiple energy scales at a quantum critical point.

    PubMed

    Gegenwart, P; Westerkamp, T; Krellner, C; Tokiwa, Y; Paschen, S; Geibel, C; Steglich, F; Abrahams, E; Si, Q

    2007-02-16

    We report thermodynamic measurements in a magnetic-field-driven quantum critical point of a heavy fermion metal, YbRh2Si2. The data provide evidence for an energy scale in the equilibrium excitation spectrum that is in addition to the one expected from the slow fluctuations of the order parameter. Both energy scales approach zero as the quantum critical point is reached, thereby providing evidence for a new class of quantum criticality.

  17. Storage of multiple single-photon pulses emitted from a quantum dot in a solid-state quantum memory

    PubMed Central

    Tang, Jian-Shun; Zhou, Zong-Quan; Wang, Yi-Tao; Li, Yu-Long; Liu, Xiao; Hua, Yi-Lin; Zou, Yang; Wang, Shuang; He, De-Yong; Chen, Geng; Sun, Yong-Nan; Yu, Ying; Li, Mi-Feng; Zha, Guo-Wei; Ni, Hai-Qiao; Niu, Zhi-Chuan; Li, Chuan-Feng; Guo, Guang-Can

    2015-01-01

    Quantum repeaters are critical components for distributing entanglement over long distances in presence of unavoidable optical losses during transmission. Stimulated by the Duan–Lukin–Cirac–Zoller protocol, many improved quantum repeater protocols based on quantum memories have been proposed, which commonly focus on the entanglement-distribution rate. Among these protocols, the elimination of multiple photons (or multiple photon-pairs) and the use of multimode quantum memory are demonstrated to have the ability to greatly improve the entanglement-distribution rate. Here, we demonstrate the storage of deterministic single photons emitted from a quantum dot in a polarization-maintaining solid-state quantum memory; in addition, multi-temporal-mode memory with 1, 20 and 100 narrow single-photon pulses is also demonstrated. Multi-photons are eliminated, and only one photon at most is contained in each pulse. Moreover, the solid-state properties of both sub-systems make this configuration more stable and easier to be scalable. Our work will be helpful in the construction of efficient quantum repeaters based on all-solid-state devices. PMID:26468996

  18. Storage of multiple single-photon pulses emitted from a quantum dot in a solid-state quantum memory.

    PubMed

    Tang, Jian-Shun; Zhou, Zong-Quan; Wang, Yi-Tao; Li, Yu-Long; Liu, Xiao; Hua, Yi-Lin; Zou, Yang; Wang, Shuang; He, De-Yong; Chen, Geng; Sun, Yong-Nan; Yu, Ying; Li, Mi-Feng; Zha, Guo-Wei; Ni, Hai-Qiao; Niu, Zhi-Chuan; Li, Chuan-Feng; Guo, Guang-Can

    2015-10-15

    Quantum repeaters are critical components for distributing entanglement over long distances in presence of unavoidable optical losses during transmission. Stimulated by the Duan-Lukin-Cirac-Zoller protocol, many improved quantum repeater protocols based on quantum memories have been proposed, which commonly focus on the entanglement-distribution rate. Among these protocols, the elimination of multiple photons (or multiple photon-pairs) and the use of multimode quantum memory are demonstrated to have the ability to greatly improve the entanglement-distribution rate. Here, we demonstrate the storage of deterministic single photons emitted from a quantum dot in a polarization-maintaining solid-state quantum memory; in addition, multi-temporal-mode memory with 1, 20 and 100 narrow single-photon pulses is also demonstrated. Multi-photons are eliminated, and only one photon at most is contained in each pulse. Moreover, the solid-state properties of both sub-systems make this configuration more stable and easier to be scalable. Our work will be helpful in the construction of efficient quantum repeaters based on all-solid-state devices.

  19. Optimized multiple quantum MAS lineshape simulations in solid state NMR

    NASA Astrophysics Data System (ADS)

    Brouwer, William J.; Davis, Michael C.; Mueller, Karl T.

    2009-10-01

    The majority of nuclei available for study in solid state Nuclear Magnetic Resonance have half-integer spin I>1/2, with corresponding electric quadrupole moment. As such, they may couple with a surrounding electric field gradient. This effect introduces anisotropic line broadening to spectra, arising from distinct chemical species within polycrystalline solids. In Multiple Quantum Magic Angle Spinning (MQMAS) experiments, a second frequency dimension is created, devoid of quadrupolar anisotropy. As a result, the center of gravity of peaks in the high resolution dimension is a function of isotropic second order quadrupole and chemical shift alone. However, for complex materials, these parameters take on a stochastic nature due in turn to structural and chemical disorder. Lineshapes may still overlap in the isotropic dimension, complicating the task of assignment and interpretation. A distributed computational approach is presented here which permits simulation of the two-dimensional MQMAS spectrum, generated by random variates from model distributions of isotropic chemical and quadrupole shifts. Owing to the non-convex nature of the residual sum of squares (RSS) function between experimental and simulated spectra, simulated annealing is used to optimize the simulation parameters. In this manner, local chemical environments for disordered materials may be characterized, and via a re-sampling approach, error estimates for parameters produced. Program summaryProgram title: mqmasOPT Catalogue identifier: AEEC_v1_0 Program summary URL:http://cpc.cs.qub.ac.uk/summaries/AEEC_v1_0.html Program obtainable from: CPC Program Library, Queen's University, Belfast, N. Ireland Licensing provisions: Standard CPC licence, http://cpc.cs.qub.ac.uk/licence/licence.html No. of lines in distributed program, including test data, etc.: 3650 No. of bytes in distributed program, including test data, etc.: 73 853 Distribution format: tar.gz Programming language: C, OCTAVE Computer: UNIX

  20. Multiple-User Quantum Information Theory for Optical Communication Channels

    DTIC Science & Technology

    2008-06-01

    recognized to be composed of special cases of quantum mechanics and/or relativity theory. Paul Dirac brought relativity theory to bear on quantum physics, so...Borade, S., Zheng, L., and Trott , M., “Multilevel broadcast networks,” Proceed- ings of the IEEE International Symposium on Information Theory, Nice

  1. An AlGaN Core-Shell Tunnel Junction Nanowire Light-Emitting Diode Operating in the Ultraviolet-C Band.

    PubMed

    Sadaf, S M; Zhao, S; Wu, Y; Ra, Y-H; Liu, X; Vanka, S; Mi, Z

    2017-02-08

    To date, semiconductor light emitting diodes (LEDs) operating in the deep ultraviolet (UV) spectral range exhibit very low efficiency due to the presence of large densities of defects and extremely inefficient p-type conduction of conventional AlGaN quantum well heterostructures. We have demonstrated that such critical issues can be potentially addressed by using nearly defect-free AlGaN tunnel junction core-shell nanowire heterostructures. The core-shell nanowire arrays exhibit high photoluminescence efficiency (∼80%) in the UV-C band at room temperature. With the incorporation of an epitaxial Al tunnel junction, the p-(Al)GaN contact-free nanowire deep UV LEDs showed nearly one order of magnitude reduction in the device resistance, compared to the conventional nanowire p-i-n device. The unpackaged Al tunnel junction deep UV LEDs exhibit an output power >8 mW and a peak external quantum efficiency ∼0.4%, which are nearly one to two orders of magnitude higher than previously reported AlGaN nanowire devices. Detailed studies further suggest that the maximum achievable efficiency is limited by electron overflow and poor light extraction efficiency due to the TM polarized emission.

  2. Multiple Quantum Well-Based Modulating Retroreflectors for Inter- and Intra-Spacecraft Communications

    DTIC Science & Technology

    2006-01-01

    Multiple quantum well-based modulating retroreflectors for inter- and intra-spacecraft communication Peter G. Goetz, William S. Rabinovich, G...is presented. Keywords: Free-space optics, modulating retroreflector , multiple quantum well, radiation tolerance, FSO, MQW, MRR 1. INTRODUCTION...RETRO-REFLECTORS (MRRS) A MRR couples a passive optical retroreflector such as a corner-cube or a cat’s eye retroreflector with an electro-optic

  3. Sub-milliwatt AlGaN nanowire tunnel junction deep ultraviolet light emitting diodes on silicon operating at 242 nm

    NASA Astrophysics Data System (ADS)

    Zhao, S.; Sadaf, S. M.; Vanka, S.; Wang, Y.; Rashid, R.; Mi, Z.

    2016-11-01

    We report AlGaN nanowire light emitting diodes (LEDs) operating in the ultraviolet-C band. The LED structures are grown by molecular beam epitaxy on Si substrate. It is found that with the use of the n+-GaN/Al/p+-AlGaN tunnel junction (TJ), the device resistance is reduced by one order of magnitude, and the light output power is increased by two orders of magnitude, compared to AlGaN nanowire LEDs without TJ. For unpackaged TJ ultraviolet LEDs emitting at 242 nm, a maximum output power of 0.37 mW is measured, with a peak external quantum efficiency up to 0.012%.

  4. A quantum-inspired genetic algorithm based on probabilistic coding for multiple sequence alignment.

    PubMed

    Huo, Hong-Wei; Stojkovic, Vojislav; Xie, Qiao-Luan

    2010-02-01

    Quantum parallelism arises from the ability of a quantum memory register to exist in a superposition of base states. Since the number of possible base states is 2(n), where n is the number of qubits in the quantum memory register, one operation on a quantum computer performs what an exponential number of operations on a classical computer performs. The power of quantum algorithms comes from taking advantages of quantum parallelism. Quantum algorithms are exponentially faster than classical algorithms. Genetic optimization algorithms are stochastic search algorithms which are used to search large, nonlinear spaces where expert knowledge is lacking or difficult to encode. QGMALIGN--a probabilistic coding based quantum-inspired genetic algorithm for multiple sequence alignment is presented. A quantum rotation gate as a mutation operator is used to guide the quantum state evolution. Six genetic operators are designed on the coding basis to improve the solution during the evolutionary process. The experimental results show that QGMALIGN can compete with the popular methods, such as CLUSTALX and SAGA, and performs well on the presenting biological data. Moreover, the addition of genetic operators to the quantum-inspired algorithm lowers the cost of overall running time.

  5. Multiple-exciton generation in lead selenide nanorod solar cells with external quantum efficiencies exceeding 120%

    PubMed Central

    Davis, Nathaniel J. L. K.; Böhm, Marcus L.; Tabachnyk, Maxim; Wisnivesky-Rocca-Rivarola, Florencia; Jellicoe, Tom C.; Ducati, Caterina; Ehrler, Bruno; Greenham, Neil C.

    2015-01-01

    Multiple-exciton generation—a process in which multiple charge-carrier pairs are generated from a single optical excitation—is a promising way to improve the photocurrent in photovoltaic devices and offers the potential to break the Shockley–Queisser limit. One-dimensional nanostructures, for example nanorods, have been shown spectroscopically to display increased multiple exciton generation efficiencies compared with their zero-dimensional analogues. Here we present solar cells fabricated from PbSe nanorods of three different bandgaps. All three devices showed external quantum efficiencies exceeding 100% and we report a maximum external quantum efficiency of 122% for cells consisting of the smallest bandgap nanorods. We estimate internal quantum efficiencies to exceed 150% at relatively low energies compared with other multiple exciton generation systems, and this demonstrates the potential for substantial improvements in device performance due to multiple exciton generation. PMID:26411283

  6. Multiple-exciton generation in lead selenide nanorod solar cells with external quantum efficiencies exceeding 120.

    PubMed

    Davis, Nathaniel J L K; Böhm, Marcus L; Tabachnyk, Maxim; Wisnivesky-Rocca-Rivarola, Florencia; Jellicoe, Tom C; Ducati, Caterina; Ehrler, Bruno; Greenham, Neil C

    2015-09-28

    Multiple-exciton generation-a process in which multiple charge-carrier pairs are generated from a single optical excitation-is a promising way to improve the photocurrent in photovoltaic devices and offers the potential to break the Shockley-Queisser limit. One-dimensional nanostructures, for example nanorods, have been shown spectroscopically to display increased multiple exciton generation efficiencies compared with their zero-dimensional analogues. Here we present solar cells fabricated from PbSe nanorods of three different bandgaps. All three devices showed external quantum efficiencies exceeding 100% and we report a maximum external quantum efficiency of 122% for cells consisting of the smallest bandgap nanorods. We estimate internal quantum efficiencies to exceed 150% at relatively low energies compared with other multiple exciton generation systems, and this demonstrates the potential for substantial improvements in device performance due to multiple exciton generation.

  7. Enhanced carrier injection in InGaN/GaN multiple quantum wells LED with polarization-induced electron blocking barrier

    NASA Astrophysics Data System (ADS)

    Li, Chengguo; Liu, Hongfei; Chua, Soo Jin

    2016-03-01

    In this report, we designed a light emitting diode (LED) structure in which an N-polar p-GaN layer is grown on top of Ga-polar In0.1Ga0.9N/GaN quantum wells (QWs) on an n-GaN layer. Numerical simulation reveals that the large polarization field at the polarity inversion interface induces a potential barrier in the conduction band, which can block electron overflow out of the QWs. Compared with a conventional LED structure with an Al0.2Ga0.8N electron blocking layer (EBL), the proposed LED structure shows much lower electron current leakage, higher hole injection, and a significant improvement in the internal quantum efficiency (IQE). These results suggest that the polarization induced barrier (PIB) is more effective than the AlGaN EBL in suppressing electron overflow and improving hole transport in GaN-based LEDs.

  8. Carrier multiplication detected through transient photocurrent in device-grade films of lead selenide quantum dots

    SciTech Connect

    Gao, Jianbo; Fidler, Andrew F.; Klimov, Victor I.

    2015-09-08

    In carrier multiplication, the absorption of a single photon results in two or more electron–hole pairs. Quantum dots are promising materials for implementing carrier multiplication principles in real-life technologies. So far, however, most of research in this area has focused on optical studies of solution samples with yet to be proven relevance to practical devices. We report ultra-fast electro-optical studies of device-grade films of electronically coupled quantum dots that allow us to observe multiplication directly in the photocurrent. Our studies help rationalize previous results from both optical spectroscopy and steady-state photocurrent measurements and also provide new insights into effects of electric field and ligand treatments on multiexciton yields. Importantly, we demonstrate that using appropriate chemical treatments of the films, extra charges produced by carrier multiplication can be extracted from the quantum dots before they are lost to Auger recombination and hence can contribute to photocurrent of practical devices.

  9. Carrier multiplication detected through transient photocurrent in device-grade films of lead selenide quantum dots

    PubMed Central

    Gao, Jianbo; Fidler, Andrew F.; Klimov, Victor I.

    2015-01-01

    In carrier multiplication, the absorption of a single photon results in two or more electron–hole pairs. Quantum dots are promising materials for implementing carrier multiplication principles in real-life technologies. So far, however, most of research in this area has focused on optical studies of solution samples with yet to be proven relevance to practical devices. Here we report ultrafast electro-optical studies of device-grade films of electronically coupled quantum dots that allow us to observe multiplication directly in the photocurrent. Our studies help rationalize previous results from both optical spectroscopy and steady-state photocurrent measurements and also provide new insights into effects of electric field and ligand treatments on multiexciton yields. Importantly, we demonstrate that using appropriate chemical treatments of the films, extra charges produced by carrier multiplication can be extracted from the quantum dots before they are lost to Auger recombination and hence can contribute to photocurrent of practical devices. PMID:26345390

  10. Exact non-Markovian master equations for multiple qubit systems: Quantum-trajectory approach

    NASA Astrophysics Data System (ADS)

    Chen, Yusui; You, J. Q.; Yu, Ting

    2014-11-01

    A wide class of exact master equations for a multiple qubit system can be explicitly constructed by using the corresponding exact non-Markovian quantum-state diffusion equations. These exact master equations arise naturally from the quantum decoherence dynamics of qubit system as a quantum memory coupled to a collective colored noisy source. The exact master equations are also important in optimal quantum control, quantum dissipation, and quantum thermodynamics. In this paper, we show that the exact non-Markovian master equation for a dissipative N -qubit system can be derived explicitly from the statistical average of the corresponding non-Markovian quantum trajectories. We illustrated our general formulation by an explicit construction of a three-qubit system coupled to a non-Markovian bosonic environment. This multiple qubit master equation offers an accurate time evolution of quantum systems in various domains, and paves the way to investigate the memory effect of an open system in a non-Markovian regime without any approximation.

  11. Quantum teleportation of multiple degrees of freedom of a single photon

    NASA Astrophysics Data System (ADS)

    Wang, Xi-Lin; Cai, Xin-Dong; Su, Zu-En; Chen, Ming-Cheng; Wu, Dian; Li, Li; Liu, Nai-Le; Lu, Chao-Yang; Pan, Jian-Wei

    2015-02-01

    Quantum teleportation provides a `disembodied' way to transfer quantum states from one object to another at a distant location, assisted by previously shared entangled states and a classical communication channel. As well as being of fundamental interest, teleportation has been recognized as an important element in long-distance quantum communication, distributed quantum networks and measurement-based quantum computation. There have been numerous demonstrations of teleportation in different physical systems such as photons, atoms, ions, electrons and superconducting circuits. All the previous experiments were limited to the teleportation of one degree of freedom only. However, a single quantum particle can naturally possess various degrees of freedom--internal and external--and with coherent coupling among them. A fundamental open challenge is to teleport multiple degrees of freedom simultaneously, which is necessary to describe a quantum particle fully and, therefore, to teleport it intact. Here we demonstrate quantum teleportation of the composite quantum states of a single photon encoded in both spin and orbital angular momentum. We use photon pairs entangled in both degrees of freedom (that is, hyper-entangled) as the quantum channel for teleportation, and develop a method to project and discriminate hyper-entangled Bell states by exploiting probabilistic quantum non-demolition measurement, which can be extended to more degrees of freedom. We verify the teleportation for both spin-orbit product states and hybrid entangled states, and achieve a teleportation fidelity ranging from 0.57 to 0.68, above the classical limit. Our work is a step towards the teleportation of more complex quantum systems, and demonstrates an increase in our technical control of scalable quantum technologies.

  12. Quantum teleportation of multiple degrees of freedom of a single photon.

    PubMed

    Wang, Xi-Lin; Cai, Xin-Dong; Su, Zu-En; Chen, Ming-Cheng; Wu, Dian; Li, Li; Liu, Nai-Le; Lu, Chao-Yang; Pan, Jian-Wei

    2015-02-26

    Quantum teleportation provides a 'disembodied' way to transfer quantum states from one object to another at a distant location, assisted by previously shared entangled states and a classical communication channel. As well as being of fundamental interest, teleportation has been recognized as an important element in long-distance quantum communication, distributed quantum networks and measurement-based quantum computation. There have been numerous demonstrations of teleportation in different physical systems such as photons, atoms, ions, electrons and superconducting circuits. All the previous experiments were limited to the teleportation of one degree of freedom only. However, a single quantum particle can naturally possess various degrees of freedom--internal and external--and with coherent coupling among them. A fundamental open challenge is to teleport multiple degrees of freedom simultaneously, which is necessary to describe a quantum particle fully and, therefore, to teleport it intact. Here we demonstrate quantum teleportation of the composite quantum states of a single photon encoded in both spin and orbital angular momentum. We use photon pairs entangled in both degrees of freedom (that is, hyper-entangled) as the quantum channel for teleportation, and develop a method to project and discriminate hyper-entangled Bell states by exploiting probabilistic quantum non-demolition measurement, which can be extended to more degrees of freedom. We verify the teleportation for both spin-orbit product states and hybrid entangled states, and achieve a teleportation fidelity ranging from 0.57 to 0.68, above the classical limit. Our work is a step towards the teleportation of more complex quantum systems, and demonstrates an increase in our technical control of scalable quantum technologies.

  13. Nonadditivity of quantum and classical capacities for entanglement breaking multiple-access channels and the butterfly network

    SciTech Connect

    Grudka, Andrzej; Horodecki, Pawel

    2010-06-15

    We analyze quantum network primitives which are entanglement breaking. We show superadditivity of quantum and classical capacity regions for quantum multiple-access channels and the quantum butterfly network. Since the effects are especially visible at high noise they suggest that quantum information effects may be particularly helpful in the case of the networks with occasional high noise rates. The present effects provide a qualitative borderline between superadditivities of bipartite and multipartite systems.

  14. Elimination of AlGaN epilayer cracking by spatially patterned AlN mask

    NASA Astrophysics Data System (ADS)

    Sarzyński, Marcin; Kryśko, Marcin; Targowski, Grzegorz; Czernecki, Robert; Sarzyńska, Agnieszka; Libura, Adam; Krupczyński, Wiktor; Perlin, Piotr; Leszczyński, Michał

    2006-03-01

    The inherent problem in III-nitride technology is the cracking of AlGaN layers that results from lattice mismatch between AlGaN and GaN. In case of thin substrates (30-90μm), such as, bulk GaN grown by the high-pressure/high-temperature method, the bowing of AlGaN /GaN strained structures becomes an additional problem. To eliminate cracking and bowing, AlGaN layers were grown on GaN substrates with an AlN mask patterned to form 3-15μm wide windows. In the 3μm window, the AlGaN layer was not cracked, although its thickness and Al composition exceeded critical values for growth on nonpatterned substrates. Dislocation density in the windows was of 5×106/cm2.

  15. Physically feasible three-level transitionless quantum driving with multiple Schrödinger dynamics

    NASA Astrophysics Data System (ADS)

    Song, Xue-Ke; Ai, Qing; Qiu, Jing; Deng, Fu-Guo

    2016-05-01

    Three-level quantum systems, which possess some unique characteristics beyond two-level ones, such as electromagnetically induced transparency, coherent trapping, and Raman scatting, play important roles in solid-state quantum information processing. Here, we introduce an approach to implement the physically feasible three-level transitionless quantum driving with multiple Schrödinger dynamics (MSDs). It can be used to control accurately population transfer and entanglement generation for three-level quantum systems in a nonadiabatic way. Moreover, we propose an experimentally realizable hybrid architecture, based on two nitrogen-vacancy-center ensembles coupled to a transmission line resonator, to realize our transitionless scheme which requires fewer physical resources and simple procedures, and it is more robust against environmental noises and control parameter variations than conventional adiabatic passage techniques. All these features inspire the further application of MSDs on robust quantum information processing in experiment.

  16. Photoconductivity of InGaN/GaN multiple quantum well heterostructures

    NASA Astrophysics Data System (ADS)

    Baranovskiy, M. V.; Glinskii, G. F.

    2013-08-01

    Photocurrent and photoconductivity of InGaN/GaN multiple quantum well heterostructures as a function of applied reverse bias is investigated. Optical excitation was carried out in blue and violet regions of the spectrum, and temperature was ranging from 10 to 300 K. We observed characteristic features related to consequently moving space charge boundary through the quantum wells. For each quantum well there is a range of reverse bias with negative differential conductivity when excited by blue light. Frequency and temperature measurements revealed the presence of at least two different mechanisms that determine the photoconductivity of the structures.

  17. A probabilistic coding based quantum genetic algorithm for multiple sequence alignment.

    PubMed

    Huo, Hongwei; Xie, Qiaoluan; Shen, Xubang; Stojkovic, Vojislav

    2008-01-01

    This paper presents an original Quantum Genetic algorithm for Multiple sequence ALIGNment (QGMALIGN) that combines a genetic algorithm and a quantum algorithm. A quantum probabilistic coding is designed for representing the multiple sequence alignment. A quantum rotation gate as a mutation operator is used to guide the quantum state evolution. Six genetic operators are designed on the coding basis to improve the solution during the evolutionary process. The features of implicit parallelism and state superposition in quantum mechanics and the global search capability of the genetic algorithm are exploited to get efficient computation. A set of well known test cases from BAliBASE2.0 is used as reference to evaluate the efficiency of the QGMALIGN optimization. The QGMALIGN results have been compared with the most popular methods (CLUSTALX, SAGA, DIALIGN, SB_PIMA, and QGMALIGN) results. The QGMALIGN results show that QGMALIGN performs well on the presenting biological data. The addition of genetic operators to the quantum algorithm lowers the cost of overall running time.

  18. Decoherence of multiple quantum coherences generated from a dipolar ordered state

    NASA Astrophysics Data System (ADS)

    González, C. E.; Segnorile, H. H.; Zamar, R. C.

    2011-01-01

    Starting from the hypothesis that the decay of coherent signals observed in H1 NMR experiments is driven by quantum interference, irreversible decoherence, and nonidealities in the experiment, we design an experiment to isolate and identify the irreversible attenuation of multiple-quantum coherences toward quasiequilibrium states of dipolar order in nematic liquid crystals (LCs). The experiment combines the well-known “magic sandwich” pulse sequence with preparation of dipolar ordered states and encoding of multiple-quantum coherences. The spin system composed of the dipole-coupled protons of a LC molecule provides an example of a small cluster of strongly interacting spins. We study decoherence rates under a sequence that reverses time evolution with the secular dipolar Hamiltonian to compensate coherent evolution of a closed quantum system. In this way, the time scale is made evident where irreversible decoherence takes place, providing insight into the nature of the processes responsible for the attainment of quasiequilibrium. The behavior of single- and double-quantum-coherence amplitudes with reversal time is interpreted as evidence of the quantum character (as opposed to stochastic character) of the processes that drive irreversible decoherence. The experimental method proposed is useful for probing the action of the environment on materials with quantum information processing potential.

  19. Joint source-channel coding for a quantum multiple access channel

    NASA Astrophysics Data System (ADS)

    Wilde, Mark M.; Savov, Ivan

    2012-11-01

    Suppose that two senders each obtain one share of the output of a classical, bivariate, correlated information source. They would like to transmit the correlated source to a receiver using a quantum multiple access channel. In prior work, Cover, El Gamal and Salehi provided a combined source-channel coding strategy for a classical multiple access channel which outperforms the simpler ‘separation’ strategy where separate codebooks are used for the source coding and the channel coding tasks. In this paper, we prove that a coding strategy similar to the Cover-El Gamal-Salehi strategy and a corresponding quantum simultaneous decoder allow for the reliable transmission of a source over a quantum multiple access channel, as long as a set of information inequalities involving the Holevo quantity hold.

  20. Room-Temperature Photocurrent Spectroscopy of GaAs/GaAlAs Multiple Quantum Wells,

    DTIC Science & Technology

    1994-11-15

    Hailong , Wang Qiuning, et al. DO..... ... . .I C- DTIC ~ELECTIEE 199|11O9034 19950109 034Ditiuinnlmed NAIC- ID(RS)T-0385-94 AOSSI.O •z [ A Si8 eol1Y de...MULTIPLE QUANTUM WELLS 5y: Duan Hailong , Wang Qiuning, et al. English pages: 12 Source: Bandaoti Xuebao, Vol. 12, Nr. 7, July 1991, pp. 399-4O4...TEMPERATURE PHOTOCURRENT SPECTROSCOPY OF GaAs/GaAlAs MULTIPLE QUANTUM WELLS DUAN HAILONG , WANG QIUNING, WU RONGHAN, ZENG YIPING and KONG MEIYING

  1. Reliability assessment of multiple quantum well avalanche photodiodes

    NASA Technical Reports Server (NTRS)

    Yun, Ilgu; Menkara, Hicham M.; Wang, Yang; Oguzman, Isamil H.; Kolnik, Jan; Brennan, Kevin F.; May, Gray S.; Wagner, Brent K.; Summers, Christopher J.

    1995-01-01

    The reliability of doped-barrier AlGaAs/GsAs multi-quantum well avalanche photodiodes fabricated by molecular beam epitaxy is investigated via accelerated life tests. Dark current and breakdown voltage were the parameters monitored. The activation energy of the degradation mechanism and median device lifetime were determined. Device failure probability as a function of time was computed using the lognormal model. Analysis using the electron beam induced current method revealed the degradation to be caused by ionic impurities or contamination in the passivation layer.

  2. Surface Passivation by Quantum Exclusion Using Multiple Layers

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E. (Inventor)

    2013-01-01

    A semiconductor device has a multilayer doping to provide improved passivation by quantum exclusion. The multilayer doping includes a plurality M of doped layers, where M is an integer greater than 1. The dopant sheet densities in the M doped layers need not be the same, but in principle can be selected to be the same sheet densities or to be different sheet densities. M-1 interleaved layers provided between the M doped layers are not deliberately doped (also referred to as "undoped layers"). Structures with M=2, M=3 and M=4 have been demonstrated and exhibit improved passivation.

  3. Single-loop multiple-pulse nonadiabatic holonomic quantum gates

    NASA Astrophysics Data System (ADS)

    Herterich, Emmi; Sjöqvist, Erik

    2016-11-01

    Nonadiabatic holonomic quantum computation provides the means to perform fast and robust quantum gates by utilizing the resilience of non-Abelian geometric phases to fluctuations of the path in state space. While the original scheme [E. Sjöqvist et al., New J. Phys. 14, 103035 (2012), 10.1088/1367-2630/14/10/103035] needs two loops in the Grassmann manifold (i.e., the space of computational subspaces of the full state space) to generate an arbitrary holonomic one-qubit gate, we propose single-loop one-qubit gates that constitute an efficient universal set of holonomic gates when combined with an entangling holonomic two-qubit gate. Our one-qubit gate is realized by dividing the loop into path segments, each of which is generated by a Λ -type Hamiltonian. We demonstrate that two path segments are sufficient to realize arbitrary single-loop holonomic one-qubit gates. We describe how our scheme can be implemented experimentally in a generic atomic system exhibiting a three-level Λ -coupling structure by utilizing carefully chosen laser pulses.

  4. Dual Band Deep Ultraviolet AlGaN Photodetectors

    NASA Technical Reports Server (NTRS)

    Aslam, S.; Miko, L.; Stahle, C.; Franz, D.; Pugel, D.; Guan, B.; Zhang, J. P.; Gaska, R.

    2007-01-01

    We report on the design, fabrication and characterization of a back-illuminated voltage bias selectable dual-band AlGaN UV photodetector. The photodetector can separate UVA and W-B band radiation by bias switching a two terminal n-p-n homojunction structure that is fabricated in the same pixel. When a forward bias is applied between the top and bottom electrodes, the detector can sense UV-A and reject W-B band radiation. Alternatively, under reverse bias, the photodetector can sense UV-B and reject UV-A band radiation.

  5. Simultaneous nano-tracking of multiple motor proteins via spectral discrimination of quantum dots

    PubMed Central

    Kakizuka, Taishi; Ikezaki, Keigo; Kaneshiro, Junichi; Fujita, Hideaki; Watanabe, Tomonobu M.; Ichimura, Taro

    2016-01-01

    Simultaneous nanometric tracking of multiple motor proteins was achieved by combining multicolor fluorescent labeling of target proteins and imaging spectroscopy, revealing dynamic behaviors of multiple motor proteins at the sub-diffraction-limit scale. Using quantum dot probes of distinct colors, we experimentally verified the localization precision to be a few nanometers at temporal resolution of 30 ms or faster. One-dimensional processive movement of two heads of a single myosin molecule and multiple myosin molecules was successfully traced. Furthermore, the system was modified for two-dimensional measurement and applied to tracking of multiple myosin molecules. Our approach is useful for investigating cooperative movement of proteins in supramolecular nanomachinery. PMID:27446684

  6. Quantum circuits for -multiplication with subquadratic gate count

    NASA Astrophysics Data System (ADS)

    Kepley, Shane; Steinwandt, Rainer

    2015-07-01

    One of the most cost-critical operations when applying Shor's algorithm to binary elliptic curves is the underlying field arithmetic. Here, we consider binary fields in polynomial basis representation, targeting especially field sizes as used in elliptic curve cryptography. Building on Karatsuba's algorithm, our software implementation automatically synthesizes a multiplication circuit with the number of -gates being bounded by for any given reduction polynomial of degree . If an irreducible trinomial of degree exists, then a multiplication circuit with a total gate count of is available.

  7. Precision Control of Multiple Quantum Cascade Lasers for Calibration Systems

    SciTech Connect

    Taubman, Matthew S.; Myers, Tanya L.; Pratt, Richard M.; Stahl, Robert D.; Cannon, Bret D.

    2014-01-15

    We present a precision, digitally interfaced current controller for quantum cascade lasers, with demonstrated DC and modulated temperature coefficients of 1- 2 ppm/ºC and 15 ppm/ºC respectively. High linearity digital to analog converters (DACs) together with an ultra-precision voltage reference, produce highly stable, precision voltages. These are in turn selected by a low charge-injection multiplexer (MUX) chip, which are then used to set output currents via a linear current regulator. The controller is operated in conjunction with a power multiplexing unit, allowing one of three lasers to be driven by the controller while ensuring protection of controller and all lasers during operation, standby and switching. Simple ASCII commands sent over a USB connection to a microprocessor located in the current controller operate both the controller (via the DACs and MUX chip) and the power multiplexer.

  8. Precision control of multiple quantum cascade lasers for calibration systems

    SciTech Connect

    Taubman, Matthew S. Myers, Tanya L.; Pratt, Richard M.; Stahl, Robert D.; Cannon, Bret D.

    2014-01-15

    We present a precision, 1-A, digitally interfaced current controller for quantum cascade lasers, with demonstrated temperature coefficients for continuous and 40-kHz full-depth square-wave modulated operation, of 1–2 ppm/ °C and 15 ppm/ °C, respectively. High precision digital to analog converters (DACs) together with an ultra-precision voltage reference produce highly stable, precision voltages, which are selected by a multiplexer (MUX) chip to set output currents via a linear current regulator. The controller is operated in conjunction with a power multiplexing unit, allowing one of three lasers to be driven by the controller, while ensuring protection of controller and all lasers during operation, standby, and switching. Simple ASCII commands sent over a USB connection to a microprocessor located in the current controller operate both the controller (via the DACs and MUX chip) and the power multiplexer.

  9. Surface Passivation by Quantum Exclusion Using Multiple Layers

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E. (Inventor)

    2015-01-01

    A semiconductor device has a multilayer doping to provide improved passivation by quantum exclusion. The multilayer doping includes at least two doped layers fabricated using MBE methods. The dopant sheet densities in the doped layers need not be the same, but in principle can be selected to be the same sheet densities or to be different sheet densities. The electrically active dopant sheet densities are quite high, reaching more than 1.times.10.sup.14 cm.sup.-2, and locally exceeding 10.sup.22 per cubic centimeter. It has been found that silicon detector devices that have two or more such dopant layers exhibit improved resistance to degradation by UV radiation, at least at wavelengths of 193 nm, as compared to conventional silicon p-on-n devices.

  10. Interface and photoluminescence characteristics of graphene-(GaN/InGaN)n multiple quantum wells hybrid structure

    NASA Astrophysics Data System (ADS)

    Wang, Liancheng; Liu, Zhiqiang; Zhang, Zi-Hui; Tian, Ying Dong; Yi, Xiaoyan; Wang, Junxi; Li, Jinmin; Wang, Guohong

    2016-04-01

    The effects of graphene on the optical properties of active system, e.g., the InGaN/GaN multiple quantum wells, are thoroughly investigated and clarified. Here, we have investigated the mechanisms accounting for the photoluminescence reduction for the graphene covered GaN/InGaN multiple quantum wells hybrid structure. Compared to the bare multiple quantum wells, the photoluminescence intensity of graphene covered multiple quantum wells showed a 39% decrease after excluding the graphene absorption losses. The responsible mechanisms have been identified with the following factors: (1) the graphene two dimensional hole gas intensifies the polarization field in multiple quantum wells, thus steepening the quantum well band profile and causing hole-electron pairs to further separate; (2) a lower affinity of graphene compared to air leading to a weaker capability to confine the excited hot electrons in multiple quantum wells; and (3) exciton transfer through non-radiative energy transfer process. These factors are theoretically analysed based on advanced physical models of semiconductor devices calculations and experimentally verified by varying structural parameters, such as the indium fraction in multiple quantum wells and the thickness of the last GaN quantum barrier spacer layer.

  11. Control of coherence transfer via tunneling in quadruple and multiple quantum dots

    NASA Astrophysics Data System (ADS)

    Tian, Si-Cong; Xing, En-Bo; Wan, Ren-Gang; Wang, Chun-Liang; Wang, Li-Jie; Shu, Shi-Li; Tong, Cun-Zhu; Wang, Li-Jun

    2016-12-01

    Transfer and manipulation of coherence among the ground state and indirect exciton states via tunneling in quadruple and multiple quantum dots is analyzed. By applying suitable amplitudes and sequences of the pump and tunneling pulses, a complete transfer of coherence or an arbitrary distribution of coherence of multiple states can be realized. The method, which is an adiabatic passage process, is different from previous works on quantum dot molecules in the way that the population can transfer from the ground state to the indirect exciton states without populating the direct exciton state, and thus no spontaneous emission occurs. This investigation can provide further insight to help the experimental development of coherence transfer in semiconductor structures, and may have potential applications in quantum information processing.

  12. Modulating retroreflector architecture using multiple quantum wells for free-space optical communications

    NASA Astrophysics Data System (ADS)

    Gilbreath, G. Charmaine; Rabinovich, William S.; Mahon, Rita; Corson, Michael R.; Kline, John F.; Resnick, Joshua H.; Merk, H. C.; Vilcheck, Michael J.

    1998-12-01

    In this paper, we describe a demonstration using a Multiple Quantum Well modulator combined with an optical retroreflector which supported a high speed free space optical data link. Video images were transmitted over an 859 nanometer link at a rate of 460 kilo bits per second, where rate of modulation was limited by demonstration hardware, not the modulator. Reflection architectures for the modulator were used although transmission architectures have also been investigated but are not discussed in this paper. The modulator was a GaAs/Al0.3Ga0.7As quantum well which was designed and fabricated for use as a shutter at the Naval Research Laboratory. We believe these are the first results reported demonstrating a high speed free space optical data link using multiple quantum well shutters combined with retroreflectors for viable free space optical communications.

  13. Quantum Optimal Multiple Assignment Scheme for Realizing General Access Structure of Secret Sharing

    NASA Astrophysics Data System (ADS)

    Matsumoto, Ryutaroh

    The multiple assignment scheme is to assign one or more shares to single participant so that any kind of access structure can be realized by classical secret sharing schemes. We propose its quantum version including ramp secret sharing schemes. Then we propose an integer optimization approach to minimize the average share size.

  14. Generation of Multiple Excitons in Ag2S Quantum Dots: Single High-Energy versus Multiple-Photon Excitation.

    PubMed

    Sun, Jingya; Yu, Weili; Usman, Anwar; Isimjan, Tayirjan T; DGobbo, Silvano; Alarousu, Erkki; Takanabe, Kazuhiro; Mohammed, Omar F

    2014-02-20

    We explored biexciton generation via carrier multiplication (or multiple-exciton generation) by high-energy photons and by multiple-photon absorption in Ag2S quantum dots (QDs) using femtosecond broad-band transient absorption spectroscopy. Irrespective of the size of the QDs and how the multiple excitons are generated in the Ag2S QDs, two distinct characteristic time constants of 9.6-10.2 and 135-175 ps are obtained for the nonradiative Auger recombination of the multiple excitons, indicating the existence of two binding excitons, namely, tightly bound and weakly bound excitons. More importantly, the lifetimes of multiple excitons in Ag2S QDs were about 1 and 2 orders of magnitude longer than those of comparable size PbS QDs and single-walled carbon nanotubes, respectively. This result is significant because it suggests that by utilizing an appropriate electron acceptor, there is a higher possibility to extract multiple electron-hole pairs in Ag2S QDs, which should improve the performance of QD-based solar cell devices.

  15. An optimized quantum information splitting scheme with multiple controllers

    NASA Astrophysics Data System (ADS)

    Jiang, Min

    2016-12-01

    We propose an efficient scheme for splitting multi-qudit information with cooperative control of multiple agents. Each controller is assigned one controlling qudit, and he can monitor the state sharing of all multi-qudit information. Compared with the existing schemes, our scheme requires less resource consumption and approaches higher communication efficiency. In addition, our proposal involves only generalized Bell-state measurement, single-qudit measurement, one-qudit gates and a unitary-reduction operation, which makes it flexible and achievable for physical implementation.

  16. Composition dependent valence band order in c-oriented wurtzite AlGaN layers

    SciTech Connect

    Neuschl, B. Helbing, J.; Knab, M.; Lauer, H.; Madel, M.; Thonke, K.; Feneberg, M.

    2014-09-21

    The valence band order of polar wurtzite aluminum gallium nitride (AlGaN) layers is analyzed for a dense series of samples, grown heteroepitaxially on sapphire substrates, covering the complete composition range. The excitonic transition energies, found by temperature dependent photoluminescence (PL) spectroscopy, were corrected to the unstrained state using input from X-ray diffraction. k∙p theory yields a critical relative aluminum concentration x{sub c}=(0.09±0.05) for the crossing of the uppermost two valence bands for strain free material, shifting to higher values for compressively strained samples, as supported by polarization dependent PL. The analysis of the strain dependent valence band crossing reconciles the findings of other research groups, where sample strain was neglected. We found a bowing for the energy band gap to the valence band with Γ₉ symmetry of b{sub Γ₉}=0.85eV, and propose a possible bowing for the crystal field energy of b{sub cf}=-0.12eV. A comparison of the light extraction efficiency perpendicular and parallel to the c axis of Al{sub x}Ga{sub 1-x}N/Al{sub y}Ga{sub 1-y}N quantum well structures is discussed for different compositions.

  17. Quadrupole-Echo Techniques in Multiple-Quantum-Filtered NMR Spectroscopy of Heterogeneous Systems

    NASA Astrophysics Data System (ADS)

    Eliav, U.; Navon, G.

    Multiple-quantum-filtered quadrupole-echo pulse sequences for spin I = 1 and I = {3}/{2} are suggested. A general condition for obtaining simultaneously Zeeman and quadrupolar echo is formulated. A theoretical analysis of the various pulse sequences was performed on the basis of second-order perturbation approximation of the Liouville equation for the density matrix. The extent of refocusing as a function of the ratio of the residual quadrupolar interaction and the relaxation rates was calculated. Experimental results are presented for 2H and 23Na in cartilage as an example of a heterogeneous system with residual quadrupolar interaction. The difference between relaxation times measured by the multiple-quantum-filtered echo techniques and those measured by conventional multiple-quantum-filtered NMR spectroscopy is a simple diagnostic of anisotropic motion that leads to a residual quadrupolar interaction. The results of the echo experiments are compared with the relaxation times computed on the basis of lineshape analysis of double-quantum-filtered spectra of a heterogeneous system.

  18. Multiplicative logarithmic corrections to quantum criticality in three-dimensional dimerized antiferromagnets

    NASA Astrophysics Data System (ADS)

    Qin, Yan Qi; Normand, B.; Sandvik, Anders W.; Meng, Zi Yang

    2015-12-01

    We investigate the quantum phase transition in an S =1 /2 dimerized Heisenberg antiferromagnet in three spatial dimensions. By performing large-scale quantum Monte Carlo simulations and detailed finite-size scaling analyses, we obtain high-precision results for the quantum critical properties at the transition from the magnetically disordered dimer-singlet phase to the antiferromagnetically ordered Néel phase. This transition breaks O(N ) symmetry with N =3 in D =3 +1 dimensions. This is the upper critical dimension, where multiplicative logarithmic corrections to the leading mean-field critical properties are expected; we extract these corrections, establishing their precise forms for both the zero-temperature staggered magnetization ms and the Néel temperature TN. We present a scaling ansatz for TN, including logarithmic corrections, which agrees with our data and indicates exact linearity with ms, implying a complete decoupling of quantum and thermal fluctuation effects even arbitrarily close to the quantum critical point. We also demonstrate the predicted N -independent leading and subleading logarithmic corrections in the size dependence of the staggered magnetic susceptibility. These logarithmic scaling forms have not previously been identified or verified by unbiased numerical methods, and we discuss their relevance to experimental studies of dimerized quantum antiferromagnets such as TlCuCl3.

  19. Multiplicative logarithmic corrections to quantum criticality in three-dimensional dimerized antiferromagnets

    NASA Astrophysics Data System (ADS)

    Qin, Yanqi; Normand, Bruce; Sandvik, Anders; Meng, Zi Yang

    We investigate the quantum phase transition in an S=1/2 dimerized Heisenberg antiferromagnet in three spatial dimensions. By means of quantum Monte Carlo simulations and finite-size scaling analyses, we get high-precision results for the quantum critical properties at the transition from the magnetically disordered dimer-singlet phase to the ordered Neel phase. This transition breaks O(N) symmetry with N=3 in D=3+1 dimensions. This is the upper critical dimension, where multiplicative logarithmic corrections to the leading mean-field critical properties are expected; we extract these corrections, establishing their precise forms for both the zero-temperature staggered magnetization, ms, and the Neel temperature, TN. We present a scaling ansatz for TN, including logarithmic corrections, which agrees with our data and indicates exact linearity with ms, implying a complete decoupling of quantum and thermal fluctuation effects close to the quantum critical point. These logarithmic scaling forms have not previously identified or verified by unbiased numerical methods and we discuss their relevance to experimental studies of dimerized quantum antiferromagnets such as TlCuCl3. Ref.: arXiv:1506.06073

  20. Excitonic localization at macrostep edges in AlGaN/AlGaN multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Hou, Mengjun; Qin, Zhixin; Zhang, Lisheng; Han, Tianyang; Wang, Mingxing; Xu, Fujun; Wang, Xinqiang; Yu, Tongjun; Fang, Zheyu; Shen, Bo

    2017-04-01

    Double peaks at wavelength of 276 and 290 nm are observed for AlGaN/AlGaN multiple quantum wells (MQWs). Cathodoluminescence (CL) mappings identify that the emission at 290 nm originates from the macrostep edges. Potential minima induced by local variation of QW thickness and Ga incorporation are found along the step edges, where quantum wires (QWRs) are formed. The lateral advance rate of macrostep (∼310 nm/h) is obtained by investigating the distribution of QWRs. Temperature-dependent CL spectrum suggest that thermal quenching for 290 nm emission is dramatically suppressed compared with that for conventional QWs emission, which shows excitonic localization characteristics of QWRs.

  1. Possibility of multiple tunnelling current peaks in a coupled quantum well system

    NASA Astrophysics Data System (ADS)

    Luis, D.; Díaz, J. P.; Capuj, N. E.; Cruz, H.

    2000-07-01

    In this work, we have numerically integrated in space and time the effective-mass nonlinear Schrödinger equation for an electron wave packet in a bilayer electron system. Considering both Hartree and exchange-correlation potentials, we have calculated the tunnelling rates between the two quantum wells when an external bias is applied in the double quantum well system. Due to the nonlinear effective-mass equation, it is found that the charge dynamically trapped in both wells produces a reaction field which modifies the system resonant condition. At different electronic sheet densities, we have shown the possibility of having multiple resonant tunnelling peaks in a bilayer electron system.

  2. Measuring correlations of cold-atom systems using multiple quantum probes

    NASA Astrophysics Data System (ADS)

    Streif, Michael; Buchleitner, Andreas; Jaksch, Dieter; Mur-Petit, Jordi

    2016-11-01

    We present a nondestructive method to probe a complex quantum system using multiple-impurity atoms as quantum probes. Our protocol provides access to different equilibrium properties of the system by changing its coupling to the probes. In particular, we show that measurements with two probes reveal the system's nonlocal two-point density correlations, for probe-system contact interactions. We illustrate our findings with analytic and numerical calculations for the Bose-Hubbard model in the weakly and strongly interacting regimes, under conditions relevant to ongoing experiments in cold-atom systems.

  3. Multiple-quantum cross-polarization in MAS NMR of quadrupolar nuclei

    NASA Astrophysics Data System (ADS)

    Ashbrook, Sharon E.; Brown, Steven P.; Wimperis, Stephen

    1998-05-01

    Using 27Al ( I=5/2) NMR of aluminium acetylacetonate, we show that it is possible to cross-polarize from a spin I=1/2 nucleus ( 1H) directly to the central triple-quantum transition of a half-integer quadrupolar nucleus ( 27Al) in a powdered sample under MAS conditions. The optimum conditions for this multiple-quantum cross-polarization (MQCP) are investigated experimentally and compared with existing theoretical results. The new technique is applied to the recently introduced two-dimensional MQMAS experiment for recording high-resolution NMR spectra of half-integer quadrupolar nuclei.

  4. Pulsed field gradient multiple-quantum MAS NMR spectroscopy of half-integer spin quadrupolar nuclei

    NASA Astrophysics Data System (ADS)

    Fyfe, C. A.; Skibsted, J.; Grondey, H.; Meyer zu Altenschildesche, H.

    1997-12-01

    Pulsed field gradients (PFGs) have been applied to select coherence transfer pathways in multiple-quantum (MQ) MAS NMR spectra of half-integer spin quadrupolar nuclei in rigid solids. 27Al triple-quantum (3Q) MAS NMR spectra of the aluminophosphate molecular sieves VPI-5 and AlPO 4-18 have been used to demonstrate the selection of the (0)→(3)→(-1) coherence transfer pathway using PFGs and no phase cycling. Compared to MQMAS experiments that employ phase cycling schemes, the main advantage of the PFG-MQMAS technique is its simplicity, which should facilitate the combination of MQMAS with other pulse sequences.

  5. Monitoring and Controlling of Strain During MOCVD of AlGaN for UV Optoelectronics

    SciTech Connect

    Han, J.; Crawford, M.H.; Shul, R.J.; Hearne, S.J.; Chason, E.; Figiel, J.J.; Banas, M.

    1999-01-14

    The grown-in tensile strain, due to a lattice mismatch between AlGaN and GaN, is responsible for the observed cracking that seriously limits the feasibility of nitride-based ultraviolet (UV) emitters. We report in-situ monitoring of strain/stress during MOCVD of AlGaN based on a wafer-curvature measurement technique. The strain/stress measurement confirms the presence of tensile strain during growth of AlGaN pseudomorphically on a thick GaN layer. Further growth leads to the onset of stress relief through crack generation. We find that the growth of AlGaN directly on low-temperature (LT) GaN or AlN buffer layers results in a reduced and possibly controllable strain.

  6. Singlet fission in pentacene through multiple exciton quantum states

    NASA Astrophysics Data System (ADS)

    Zhang, Zhiyong; Zimmerman, Paul; Musgrave, Charles

    2010-03-01

    Multi-exciton generation (MEG) has been reported for several materials and may dramatically increase solar cell efficiency. Singlet fission is the molecular analogue of MEG and has been observed in various systems, including tetracene and pentacene, however, no fundamental mechanism for singlet fission has yet been described, although it may govern MEG processes in a variety of materials. Because photoexcited states have single-exciton character, singlet fission to produce a pair of triplet excitons must involve an intermediate state that: (1) exhibits multi-exciton (ME) character, (2) is accessible from S1 and satisfies the fission energy requirement, and (3) efficiently dissociates into multiple electron-hole pairs. Here, we use sophisticated ab initio calculations to show that singlet fission in pentacene proceeds through a dark state (D) of ME character that lies just below S1, satisfies the fission energy requirement (ED>2ET0), and splits into two triplets (2xT0). In tetracene, D lies just above S1, consistent with the observation that singlet fission is thermally activated in tetracene. Rational design of photovoltaic systems that exploit singlet fission will require ab initio analysis of ME states such as D.

  7. Carrier multiplication detected through transient photocurrent in device-grade films of lead selenide quantum dots

    DOE PAGES

    Gao, Jianbo; Fidler, Andrew F.; Klimov, Victor I.

    2015-09-08

    In carrier multiplication, the absorption of a single photon results in two or more electron–hole pairs. Quantum dots are promising materials for implementing carrier multiplication principles in real-life technologies. So far, however, most of research in this area has focused on optical studies of solution samples with yet to be proven relevance to practical devices. We report ultra-fast electro-optical studies of device-grade films of electronically coupled quantum dots that allow us to observe multiplication directly in the photocurrent. Our studies help rationalize previous results from both optical spectroscopy and steady-state photocurrent measurements and also provide new insights into effects ofmore » electric field and ligand treatments on multiexciton yields. Importantly, we demonstrate that using appropriate chemical treatments of the films, extra charges produced by carrier multiplication can be extracted from the quantum dots before they are lost to Auger recombination and hence can contribute to photocurrent of practical devices.« less

  8. Highly efficient multiple-layer CdS quantum dot sensitized III-V solar cells.

    PubMed

    Lin, Chien-Chung; Han, Hau-Vei; Chen, Hsin-Chu; Chen, Kuo-Ju; Tsai, Yu-Lin; Lin, Wein-Yi; Kuo, Hao-Chung; Yu, Peichen

    2014-02-01

    In this review, the concept of utilization of solar spectrum in order to increase the solar cell efficiency is discussed. Among the three mechanisms, down-shifting effect is investigated in detail. Organic dye, rare-earth minerals and quantum dots are three most popular down-shift materials. While the enhancement of solar cell efficiency was not clearly observed in the past, the advances in quantum dot fabrication have brought strong response out of the hybrid platform of a quantum dot solar cell. A multiple layer structure, including PDMS as the isolation layer, is proposed and demonstrated. With the help of pulse spray system, precise control can be achieved and the optimized concentration can be found.

  9. Code-division multiple-access multiuser demodulator by using quantum fluctuations

    NASA Astrophysics Data System (ADS)

    Otsubo, Yosuke; Inoue, Jun-ichi; Nagata, Kenji; Okada, Masato

    2014-07-01

    We examine the average-case performance of a code-division multiple-access (CDMA) multiuser demodulator in which quantum fluctuations are utilized to demodulate the original message within the context of Bayesian inference. The quantum fluctuations are built into the system as a transverse field in the infinite-range Ising spin glass model. We evaluate the performance measurements by using statistical mechanics. We confirm that the CDMA multiuser modulator using quantum fluctuations achieve roughly the same performance as the conventional CDMA multiuser modulator through thermal fluctuations on average. We also find that the relationship between the quality of the original information retrieval and the amplitude of the transverse field is somehow a "universal feature" in typical probabilistic information processing, viz., in image restoration, error-correcting codes, and CDMA multiuser demodulation.

  10. Quantum-mechanical formulation of light propagation: A multiple-scattering approach

    SciTech Connect

    Guo Wei

    2007-08-15

    Since in quantum optics light is represented in terms of photons, light propagation through a linear medium is discussed quantum mechanically in this paper by following the multiple-scattering process of one incident photon from the medium. To treat the photon and the medium on the same quantum footing, the medium is assumed to be an ensemble of uniformly distributed identical two-level atoms. It is found that inside the medium the incident photon follows the same propagation rules as a plane wave does in the classical domain, and has a possibility to become entangled with the atoms. It is also found that when interacting with a two-level test atom outside the medium, the output photon appears to be formally in a single mode identical to that of the incident photon.

  11. Code-division multiple-access multiuser demodulator by using quantum fluctuations.

    PubMed

    Otsubo, Yosuke; Inoue, Jun-Ichi; Nagata, Kenji; Okada, Masato

    2014-07-01

    We examine the average-case performance of a code-division multiple-access (CDMA) multiuser demodulator in which quantum fluctuations are utilized to demodulate the original message within the context of Bayesian inference. The quantum fluctuations are built into the system as a transverse field in the infinite-range Ising spin glass model. We evaluate the performance measurements by using statistical mechanics. We confirm that the CDMA multiuser modulator using quantum fluctuations achieve roughly the same performance as the conventional CDMA multiuser modulator through thermal fluctuations on average. We also find that the relationship between the quality of the original information retrieval and the amplitude of the transverse field is somehow a "universal feature" in typical probabilistic information processing, viz., in image restoration, error-correcting codes, and CDMA multiuser demodulation.

  12. Influence of AlN thickness on AlGaN epilayer grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Jayasakthi, M.; Juillaguet, S.; Peyre, H.; Konczewicz, L.; Baskar, K.; Contreras, S.

    2016-10-01

    AlGaN/AlN layers were grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. The AlN buffer thickness was varied from 400 nm to 800 nm. The AlGaN layer thickness was 1000 nm. The crystalline quality, thickness and composition of AlGaN were determined using high resolution X-ray diffraction (HRXRD). The threading dislocation density (TDD) was found to decrease with increase of AlN layer thickness. Reciprocal space mapping (RSM) was used to estimate the strain and relaxation between AlGaN and AlN. The optical properties of AlGaN layers were investigated by temperature dependent photoluminescence (PL). PL intensities of AlGaN layers increases with increasing the AlN thickness. The surface morphology of AlGaN was studied by atomic force microscopy (AFM). Root mean square (RMS) roughness values were found to be decreased while increase of AlN thickness.

  13. MOCVD growth of AlGaN UV LEDs

    SciTech Connect

    Han, J.; Crawford, M.H.

    1998-09-01

    Issues related to the MOCVD growth of AlGaN, specifically the gas-phase parasitic reactions among TMG, TMA, and NH{sub 3}, are studied using an in-situ optical reflectometer. It is observed that the presence of the well-known gas phase adduct (TMA: NH{sub 3}) could seriously hinder the incorporation behavior of TMGa. Relatively low reactor pressures (30--50 Torr) are employed to grow an AlGaN/GaN SCH QW p-n diode structure. The UV emission at 360 nm (FWHM {approximately} 10 nm) represents the first report of LED operation from an indium-free GaN QW diode.

  14. Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240–350 nm emission

    SciTech Connect

    Himwas, C.; Hertog, M. den; Dang, Le Si; Songmuang, R.; Monroy, E.

    2014-12-15

    We present structural and optical studies of AlGaN sections and AlGaN/AlN nanodisks (NDs) in nanowires grown by plasma-assisted molecular beam epitaxy. The Al-Ga intermixing at Al(Ga)N/GaN interfaces and the chemical inhomogeneity in AlGaN NDs evidenced by scanning transmission electron microscopy are attributed to the strain relaxation process. This interpretation is supported by the three-dimensional strain distribution calculated by minimizing the elastic energy in the structure. The alloy inhomogeneity increases with the Al content, leading to enhanced carrier localization signatures in the luminescence characteristics, i.e., red shift of the emission, s-shaped temperature dependence, and linewidth broadening. Despite these effects, the emission energy of AlGaN/AlN NDs can be tuned in the 240–350 nm range with internal quantum efficiencies around 30%.

  15. Polyad quantum numbers and multiple resonances in anharmonic vibrational studies of polyatomic molecules

    NASA Astrophysics Data System (ADS)

    Krasnoshchekov, Sergey V.; Stepanov, Nikolay F.

    2013-11-01

    In the theory of anharmonic vibrations of a polyatomic molecule, mixing the zero-order vibrational states due to cubic, quartic and higher-order terms in the potential energy expansion leads to the appearance of more-or-less isolated blocks of states (also called polyads), connected through multiple resonances. Such polyads of states can be characterized by a common secondary integer quantum number. This polyad quantum number is defined as a linear combination of the zero-order vibrational quantum numbers, attributed to normal modes, multiplied by non-negative integer polyad coefficients, which are subject to definition for any particular molecule. According to Kellman's method [J. Chem. Phys. 93, 6630 (1990)], the corresponding formalism can be conveniently described using vector algebra. In the present work, a systematic consideration of polyad quantum numbers is given in the framework of the canonical Van Vleck perturbation theory (CVPT) and its numerical-analytic operator implementation for reducing the Hamiltonian to the quasi-diagonal form, earlier developed by the authors. It is shown that CVPT provides a convenient method for the systematic identification of essential resonances and the definition of a polyad quantum number. The method presented is generally suitable for molecules of significant size and complexity, as illustrated by several examples of molecules up to six atoms. The polyad quantum number technique is very useful for assembling comprehensive basis sets for the matrix representation of the Hamiltonian after removal of all non-resonance terms by CVPT. In addition, the classification of anharmonic energy levels according to their polyad quantum numbers provides an additional means for the interpretation of observed vibrational spectra.

  16. Polyad quantum numbers and multiple resonances in anharmonic vibrational studies of polyatomic molecules.

    PubMed

    Krasnoshchekov, Sergey V; Stepanov, Nikolay F

    2013-11-14

    In the theory of anharmonic vibrations of a polyatomic molecule, mixing the zero-order vibrational states due to cubic, quartic and higher-order terms in the potential energy expansion leads to the appearance of more-or-less isolated blocks of states (also called polyads), connected through multiple resonances. Such polyads of states can be characterized by a common secondary integer quantum number. This polyad quantum number is defined as a linear combination of the zero-order vibrational quantum numbers, attributed to normal modes, multiplied by non-negative integer polyad coefficients, which are subject to definition for any particular molecule. According to Kellman's method [J. Chem. Phys. 93, 6630 (1990)], the corresponding formalism can be conveniently described using vector algebra. In the present work, a systematic consideration of polyad quantum numbers is given in the framework of the canonical Van Vleck perturbation theory (CVPT) and its numerical-analytic operator implementation for reducing the Hamiltonian to the quasi-diagonal form, earlier developed by the authors. It is shown that CVPT provides a convenient method for the systematic identification of essential resonances and the definition of a polyad quantum number. The method presented is generally suitable for molecules of significant size and complexity, as illustrated by several examples of molecules up to six atoms. The polyad quantum number technique is very useful for assembling comprehensive basis sets for the matrix representation of the Hamiltonian after removal of all non-resonance terms by CVPT. In addition, the classification of anharmonic energy levels according to their polyad quantum numbers provides an additional means for the interpretation of observed vibrational spectra.

  17. High-resolution absorptive intermolecular multiple-quantum coherence NMR spectroscopy under inhomogeneous fields

    NASA Astrophysics Data System (ADS)

    Lin, Meijin; Lin, Yanqin; Chen, Xi; Cai, Shuhui; Chen, Zhong

    2012-01-01

    Intermolecular multiple-quantum coherence (iMQC) is capable of improving NMR spectral resolution using a 2D shearing manipulation method. A pulse sequence termed CT-iDH, which combines intermolecular double-quantum filter (iDQF) with a modified constant-time (CT) scheme, is designed to achieve fast acquisition of high-resolution intermolecular zero-quantum coherences (iZQCs) and intermolecular double-quantum coherences (iDQCs) spectra without strong coupling artifacts. Furthermore, double-absorption lineshapes are first realized in 2D intermolecular multi-quantum coherences (iMQCs) spectra under inhomogeneous fields through a combination of iZQC and iDQC signals to double the resolution without loss of sensitivity. Theoretically the spectral linewidth can be further reduced by half compared to original iMQC high-resolution spectra. Several experiments were performed to test the feasibility of the new method and the improvements are evaluated quantitatively. The study suggests potential applications for in vivo spectroscopy.

  18. Reversed polarized emission in highly strained a -plane GaN/AlN multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Mata, R.; Cros, A.; Budagosky, J. A.; Molina-Sánchez, A.; Garro, N.; García-Cristóbal, A.; Renard, J.; Founta, S.; Gayral, B.; Bellet-Amalric, E.; Bougerol, C.; Daudin, B.

    2010-09-01

    The polarization of the emission from a set of highly strained a -plane GaN/AlN multiple quantum wells of varying well widths has been studied. A single photoluminescence peak is observed that shifts to higher energies as the quantum well thickness decreases due to quantum confinement. The emitted light is linearly polarized. For the thinnest samples the preferential polarization direction is perpendicular to the wurtzite c axis with a degree of polarization that decreases with increasing well width. However, for the thickest well the preferred polarization direction is parallel to the c axis. Raman scattering, x-ray diffraction, and transmission electron microscopy studies have been performed to determine the three components of the strain tensor in the active region. Moreover, the experimental results have been compared with the strain values computed by means of a model based on the elastic continuum theory. A high anisotropic compressive in-plane strain has been found, namely, -0.6% and -2.8% along the in-plane directions [11¯00] and [0001], respectively, for the thickest quantum well. The oscillator strength of the lowest optical transition has been calculated within the framework of a multiband envelope function model for various quantum well widths and strain values. The influence of confinement and strain on the degree of polarization is discussed and compared with experiment considering various sets of material parameters.

  19. Molecular beam epitaxy growth of Al-rich AlGaN nanowires for deep ultraviolet optoelectronics

    NASA Astrophysics Data System (ADS)

    Zhao, S.; Woo, S. Y.; Sadaf, S. M.; Wu, Y.; Pofelski, A.; Laleyan, D. A.; Rashid, R. T.; Wang, Y.; Botton, G. A.; Mi, Z.

    2016-08-01

    Self-organized AlGaN nanowires by molecular beam epitaxy have attracted significant attention for deep ultraviolet optoelectronics. However, due to the strong compositional modulations under conventional nitrogen rich growth conditions, emission wavelengths less than 250 nm have remained inaccessible. Here we show that Al-rich AlGaN nanowires with much improved compositional uniformity can be achieved in a new growth paradigm, wherein a precise control on the optical bandgap of ternary AlGaN nanowires can be achieved by varying the substrate temperature. AlGaN nanowire LEDs, with emission wavelengths spanning from 236 to 280 nm, are also demonstrated.

  20. Homo- and Heteronuclear Multiple-Quantum Filters for Measurement of NMR Isotope Shifts

    NASA Astrophysics Data System (ADS)

    Wooten, E. W.; Dua, R. K.; Dotson, G. D.; Woodard, R. W.

    The measurement of NMR isotope shifts as mechanistic probes can be complicated by mixtures of isotopomers. Homo- and heteronuclear NMR techniques based on multiple-quantum filtration are presented and shown to be a useful aid in measuring such shifts. The effects of 1H/ 2H substitution and 16O/ 18O substitution on the nuclear shielding of 1H, 13C, and 31P in a multiply labeled phosphoenolpyruvate are measured and interpreted qualitatively in terms of their rovibrational origins.

  1. Entropic Uncertainty Relation and Information Exclusion Relation for multiple measurements in the presence of quantum memory

    NASA Astrophysics Data System (ADS)

    Zhang, Jun; Zhang, Yang; Yu, Chang-Shui

    2015-06-01

    The Heisenberg uncertainty principle shows that no one can specify the values of the non-commuting canonically conjugated variables simultaneously. However, the uncertainty relation is usually applied to two incompatible measurements. We present tighter bounds on both entropic uncertainty relation and information exclusion relation for multiple measurements in the presence of quantum memory. As applications, three incompatible measurements on Werner state and Horodecki’s bound entangled state are investigated in details.

  2. Entropic Uncertainty Relation and Information Exclusion Relation for multiple measurements in the presence of quantum memory.

    PubMed

    Zhang, Jun; Zhang, Yang; Yu, Chang-shui

    2015-06-29

    The Heisenberg uncertainty principle shows that no one can specify the values of the non-commuting canonically conjugated variables simultaneously. However, the uncertainty relation is usually applied to two incompatible measurements. We present tighter bounds on both entropic uncertainty relation and information exclusion relation for multiple measurements in the presence of quantum memory. As applications, three incompatible measurements on Werner state and Horodecki's bound entangled state are investigated in details.

  3. Multiple-quantum NMR studies of spin clusters in liquid crystals and zeolites

    SciTech Connect

    Pearson, J. . Dept. of Chemistry Lawrence Berkeley Lab., CA )

    1991-07-01

    This work will describe the use of MQ NMR to study spin clusters in anisotropic materials. A technique known as multiple-quantum spin counting was used to determine average spin cluster sizes liquid crystalline materials and in faujacitic zeolites containing aromatic hydrocarbons. The first half of the thesis will describe MQ NMR and the MQ spin counting technique, and the second half of the thesis will describe the actual experiments and their results.

  4. Interfacial design and structure of protein/polymer films on oxidized AlGaN surfaces

    NASA Astrophysics Data System (ADS)

    Gupta, Samit K.; Wu, Hao-Hsuan; Kwak, Kwang J.; Casal, Patricia; Nicholson, Theodore R., III; Wen, Xuejin; Anisha, R.; Bhushan, Bharat; Berger, Paul R.; Lu, Wu; Brillson, Leonard J.; Lee, Stephen Craig

    2011-01-01

    Protein detection using biologically or immunologically modified field-effect transistors (bio/immunoFETs) depends on the nanoscale structure of the polymer/protein film at sensor interfaces (Bhushan 2010 Springer Handbook of Nanotechnology 3rd edn (Heidelberg: Springer); Gupta et al 2010 The effect of interface modification on bioFET sensitivity, submitted). AlGaN-based HFETs (heterojunction FETs) are attractive platforms for many protein sensing applications due to their electrical stability in high osmolarity aqueous environments and favourable current drive capabilities. However, interfacial polymer/protein films on AlGaN, though critical to HFET protein sensor function, have not yet been fully characterized. These interfacial films are typically comprised of protein-polymer films, in which analyte-specific receptors are tethered to the sensing surface with a heterobifunctional linker molecule (often a silane molecule). Here we provide insight into the structure and tribology of silane interfaces composed of one of two different silane monomers deposited on oxidized AlGaN, and other metal oxide surfaces. We demonstrate distinct morphologies and wear properties for the interfacial films, attributable to the specific chemistries of the silane monomers used in the films. For each specific silane monomer, film morphologies and wear are broadly consistent on multiple oxide surfaces. Differences in interfacial film morphology also drive improvements in sensitivity of the underlying HFET (coincident with, though not necessarily caused by, differences in interfacial film thickness). We present a testable model of the hypothetical differential interfacial depth distribution of protein analytes on FET sensor interfaces with distinct morphologies. Empirical validation of this model may rationalize the actual behaviour of planar immunoFETs, which has been shown to be contrary to expectations of bio/immunoFET behaviour prevalent in the literature for the last 20 years

  5. Internal quantum efficiency improvement of InGaN/GaN multiple quantum well green light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Zhou, Q.; Xu, M.; Wang, H.

    2016-01-01

    In recent years, GaN-based light-emitting diode (LED) has been widely used in various applications, such as RGB lighting system, full-colour display and visible-light communication. However, the internal quantum efficiency (IQE) of green LEDs is significantly lower than that of other visible spectrum LED. This phenomenon is called "green gap". This paper briefly describes the physical mechanism of the low IQE for InGaN/GaN multiple quantum well (MQW) green LED at first. The IQE of green LED is limited by the defects and the internal electric field in MQW. Subsequently, we discuss the recent progress in improving the IQE of green LED in detail. These strategies can be divided into two categories. Some of these methods were proposed to enhance crystal quality of InGaN/GaN MQW with high In composition and low density of defects by modifying the growth conditions. Other methods focused on increasing electron-hole wave function overlap by eliminating the polarization effect.

  6. Electric field dependent Electroreflectance of GaAs/AlGaAs multiple quantum well Bragg structure at second quantum state

    NASA Astrophysics Data System (ADS)

    Nakarmi, Mim; Shakya, Naresh; Chaldyshev, Vladimir

    Electroreflectance Spectroscopy was employed to study the effect of electric field on the excitonic transitions in a GaAs/AlGaAs multiple quantum well (MQW) Bragg structure. The sample used in this experiment consists of 60 periods of quantum well structures with GaAs well layer (~13 nm) and AlGaAs barrier layer (~94 nm), grown by molecular beam expitaxy on a semi-insulating GaAs substrate. The sample structure was designed to coincide the Bragg resonance peak with the x(e2-hh2) exciton transitions. We observed a significant enhancement of excitonic feature around the x(e2-hh2) exciton transition due to the double resonance along with the sharp features of x(e1-hh1) and x(e1-lh1) ground state exciton transitions by tuning the angle of incidence of the light. We will present the results on electric field dependent electroreflectance measurements of this structure and discuss the effect of electric field on the first and second energy states.

  7. Third generation photovoltaics based on multiple exciton generation in quantum confined semiconductors.

    PubMed

    Beard, Matthew C; Luther, Joseph M; Semonin, Octavi E; Nozik, Arthur J

    2013-06-18

    Improving the primary photoconversion process in a photovoltaiccell by utilizing the excess energy that is otherwise lost as heat can lead to an increase in the overall power conversion efficiency (PCE). Semiconductor nanocrystals (NCs) with at least one dimension small enough to produce quantum confinement effects provide new ways of controlling energy flow not achievable in thin film or bulk semiconductors. Researchers have developed various strategies to incorporate these novel structures into suitable solar conversion systems. Some of these methods could increase the PCE past the Shockley-Queisser (SQ) limit of ∼33%, making them viable "third generation photovoltaic" (TGPV) cell architectures. Surpassing the SQ limit for single junction solar cells presents both a scientific and a technological challenge, and the use of semiconductor NCs to enhance the primary photoconversion process offers a promising potential solution. The NCs are synthesized via solution phase chemical reactions producing stable colloidal solutions, where the reaction conditions can be modified to produce a variety of shapes, compositions, and structures. The confinement of the semiconductor NC in one dimension produces quantum films, wells, or discs. Two-dimensional confinement leads to quantum wires or rods (QRs), and quantum dots (QDs) are three-dimensionally confined NCs. The process of multiple exciton generation (MEG) converts a high-energy photon into multiple electron-hole pairs. Although many studies have demonstrated that MEG is enhanced in QDs compared with bulk semiconductors, these studies have either used ultrafast spectroscopy to measure the photon-to-exciton quantum yields (QYs) or theoretical calculations. Implementing MEG in a working solar cell has been an ongoing challenge. In this Account, we discuss the status of MEG research and strategies towards implementing MEG in working solar cells. Recently we showed an external quantum efficiency for photocurrent of greater

  8. Multiple quantum phase transitions and superconductivity in Ce-based heavy fermions.

    PubMed

    Weng, Z F; Smidman, M; Jiao, L; Lu, Xin; Yuan, H Q

    2016-09-01

    Heavy fermions have served as prototype examples of strongly-correlated electron systems. The occurrence of unconventional superconductivity in close proximity to the electronic instabilities associated with various degrees of freedom points to an intricate relationship between superconductivity and other electronic states, which is unique but also shares some common features with high temperature superconductivity. The magnetic order in heavy fermion compounds can be continuously suppressed by tuning external parameters to a quantum critical point, and the role of quantum criticality in determining the properties of heavy fermion systems is an important unresolved issue. Here we review the recent progress of studies on Ce based heavy fermion superconductors, with an emphasis on the superconductivity emerging on the edge of magnetic and charge instabilities as well as the quantum phase transitions which occur by tuning different parameters, such as pressure, magnetic field and doping. We discuss systems where multiple quantum critical points occur and whether they can be classified in a unified manner, in particular in terms of the evolution of the Fermi surface topology.

  9. Enhancement of spectral editing efficacy of multiple quantum filters in in vivo proton magnetic resonance spectroscopy.

    PubMed

    Kim, Hyeonjin; Thompson, Richard B; Allen, Peter S

    2012-10-01

    The performance of multiple quantum filters (MQFs) can be disappointing when the background signal also arises from coupled spins. Moreover, at 3.0 T and even higher fields the majority of the spin systems of key brain metabolites fall into the strong-coupling regime. In this manuscript we address comprehensively, the importance of the phase of the multiple quantum coherence-generating pulse (MQ-pulse) in the design of MQFs, using both product operator and numerical analysis, in both zero and double quantum filter designs. The theoretical analyses were experimentally validated with the examples of myo-inositol editing and the separation of glutamate from glutamine. The results demonstrate that the phase of the MQ-pulse per se provides an additional spectral discrimination mechanism based on the degree of coupling beyond the conventional level-of-coherence approach of MQFs. To obtain the best spectral discrimination of strongly-coupled spin systems, therefore, the phase of the MQ-pulse must be included in the portfolio of the sequence parameters to be optimized.

  10. Polarizabilities of Impurity Doped Quantum Dots Under Pulsed Field: Role of Multiplicative White Noise

    NASA Astrophysics Data System (ADS)

    Saha, Surajit; Ghosh, Manas

    2016-02-01

    We perform a rigorous analysis of the profiles of a few diagonal and off-diagonal components of linear ( α xx , α yy , α xy , and α yx ), first nonlinear ( β xxx , β yyy , β xyy , and β yxx ), and second nonlinear ( γ xxxx , γ yyyy , γ xxyy , and γ yyxx ) polarizabilities of quantum dots exposed to an external pulsed field. Simultaneous presence of multiplicative white noise has also been taken into account. The quantum dot contains a dopant represented by a Gaussian potential. The number of pulse and the dopant location have been found to fabricate the said profiles through their interplay. Moreover, a variation in the noise strength also contributes evidently in designing the profiles of above polarizability components. In general, the off-diagonal components have been found to be somewhat more responsive to a variation of noise strength. However, we have found some exception to the above fact for the off-diagonal β yxx component. The study projects some pathways of achieving stable, enhanced, and often maximized output of linear and nonlinear polarizabilities of doped quantum dots driven by multiplicative noise.

  11. Influence of metalorganic precursors flow interruption timing on green InGaN multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Dmukauskas, M.; Kadys, A.; Malinauskas, T.; Grinys, T.; Reklaitis, I.; Badokas, K.; Skapas, M.; Tomašiūnas, R.; Dobrovolskas, D.; Stanionytė, S.; Pietzonka, I.; Strassburg, M.; Lugauer, H.-J.

    2016-12-01

    The paper reports on fully strained green light emitting InGaN/GaN multiple quantum wells, grown by metalorganic vapor phase epitaxy, using metal precursor multiple flow interruptions during InGaN quantum well growth. Optimization of the interruption timing (pulse t 1  =  20 s, pause t 2  =  12 s) lets us reach the integrated photoluminescence enhancement for the growth at temperature 780 ºC. The enhancement, as a function of pause duration, appeared to be pulse duration dependent: a lower enhancement can be achieved using shorter pulses with optimized relatively shorter pauses. Indium evaporation during the interruption time was interpreted as the main issue to keep the layers intact. Quantum wells revealing the highest photoluminescence enhancement were inspected for interface quality, layer thickness, growth speed, strain, surface morphology and roughness by TEM, XRD and AFM techniques, and compared with the one grown in the conventional mode.

  12. Characterization of Pairwise Correlations from Multiple Quantum Correlated Beams Generated from Cascaded Four-Wave Mixing Processes

    PubMed Central

    Wang, Hailong; Cao, Leiming; Jing, Jietai

    2017-01-01

    We theoretically characterize the performance of the pairwise correlations (PCs) from multiple quantum correlated beams based on the cascaded four-wave mixing (FWM) processes. The presence of the PCs with quantum corre- lation in these systems can be verified by calculating the degree of intensity difference squeezing for any pair of all the output fields. The quantum correlation characteristics of all the PCs under different cascaded schemes are also discussed in detail and the repulsion effect between PCs in these cascaded FWM processes is theoretically predicted. Our results open the way for the classification and application of quantum states generated from the cascaded FWM processes. PMID:28071759

  13. Optimization of carrier multiplication for more effcient solar cells: the case of Sn quantum dots.

    PubMed

    Allan, Guy; Delerue, Christophe

    2011-09-27

    We present calculations of impact ionization rates, carrier multiplication yields, and solar-power conversion efficiencies in solar cells based on quantum dots (QDs) of a semimetal, α-Sn. Using these results and previous ones on PbSe and PbS QDs, we discuss a strategy to select QDs with the highest carrier multiplication rate for more efficient solar cells. We suggest using QDs of materials with a close to zero band gap and a high multiplicity of the bands in order to favor the relaxation of photoexcited carriers by impact ionization. Even in that case, the improvement of the maximum solar-power conversion efficiency appears to be a challenging task.

  14. Birefringence in the transparency region of GaAs/AlAs multiple quantum wells

    SciTech Connect

    Sirenko, A.A.; Etchegoin, P.; Fainstein, A.; Eberl, K.; Cardona, M.

    1999-09-01

    Birefringence measurements for in-plane propagation of light below the absorption edge in GaAs/AlAs multiple quantum wells (MQW{close_quote}s) are reported for different well/barrier widths. A remarkable drop in the low-frequency limit of the birefringence has been observed for MQW structures with small periods and ascribed to the presence of local fields. The temperature dependence of the birefringence is also studied and complementary results in InP quantum dot structures are also presented. The latter exhibit a strong resonant birefringence, which can be explained by the reduced dimensionality in the joint density of states for optical transitions in the dots. {copyright} {ital 1999} {ital The American Physical Society}

  15. The role of the fano resonance in multiple exciton generation in quantum dots

    NASA Astrophysics Data System (ADS)

    Oksengendler, B. L.; Marasulov, M. B.; Nikiforov, V. N.

    2016-02-01

    The phenomenon of interference between two pathways of electron transfer from the valence to the conduction band at a quantum dot is considered. The first way is the conventional "valence band-conduction band" transition, while the second is the transition via a virtual two-electron state on the Tamm level in a quantum dot (QD) followed by the Auger effect, which ejects one electron from the Tamm level to the conduction band. In the case of a coherent addition of these ionization pathways, the Fano resonance can take place, this leading to an increase in the coefficient of photon absorption. This results in increasing internal efficiency of light conversion and can provide a basis for increasing the efficiency of solar cells due to the phenomenon of multiple exciton generation.

  16. Demonstration of InGaN-based orange LEDs with hybrid multiple-quantum-wells structure

    NASA Astrophysics Data System (ADS)

    Iida, Daisuke; Niwa, Kazumasa; Kamiyama, Satoshi; Ohkawa, Kazuhiro

    2016-11-01

    We demonstrate the effectiveness of a hybrid multiple-quantum-wells (MQWs) structure in InGaN-based orange light-emitting diodes (LEDs) grown by metalorganic vapor phase epitaxy. The hybrid MQWs-LED is composed of orange InGaN double QWs and a blue-green InGaN single QW. Using the hybrid MQWs structure, the orange LEDs exhibited electroluminescence spectra with narrow full widths at half maximum of 51 nm at 20 mA. The light output power and external quantum efficiency of the InGaN-based orange LEDs were 0.23 mW and 0.6%, respectively, at 20 mA.

  17. Engineering Efficiency Droop in InGaN/GaN Multiple Quantum Well LEDs

    NASA Astrophysics Data System (ADS)

    Puttaswamy, Yashvanth; Sundaresan, Sasi; Yalavarthi, Krishna; Ahmed, Shaikh

    2012-02-01

    In this work, we address the technologically important issue of efficiency droop pronounced in InGaN/GaN multiple quantum well (QW) LEDs. A two-fold modeling approach is employed where: 1) the NEMO 3-D tool is used to compute the atomistic strain fields and associated polarization potentials in the active region, and 2) the outputs from NEMO 3-D are then coupled to the Synopsys TCAD tool to determine the terminal electrical and optical properties of the device. Next, a series of numerical experiments are performed that mainly aims to improve the efficiency droop without compromising the internal quantum efficiency (IQE) of the device. These include:1) varying the QW thickness, 2) employing different configurations of tri-material barriers, 3) varying the molar concentration of the barrier materials, and 4) varying the doping density in the barrier region.

  18. Protected quantum computation with multiple resonators in ultrastrong coupling circuit QED.

    PubMed

    Nataf, Pierre; Ciuti, Cristiano

    2011-11-04

    We investigate theoretically the dynamical behavior of a qubit obtained with the two ground eigenstates of an ultrastrong coupling circuit-QED system consisting of a finite number of Josephson fluxonium atoms inductively coupled to a transmission line resonator. We show a universal set of quantum gates by using multiple transmission line resonators (each resonator represents a single qubit). We discuss the intrinsic "anisotropic" nature of noise sources for fluxonium artificial atoms. Through a master equation treatment with colored noise and many-level dynamics, we prove that, for a general class of anisotropic noise sources, the coherence time of the qubit and the fidelity of the quantum operations can be dramatically improved in an optimal regime of ultrastrong coupling, where the ground state is an entangled photonic "cat" state.

  19. Comparative study of NH 4OH and HCl etching behaviours on AlGaN surfaces

    NASA Astrophysics Data System (ADS)

    Sohal, Rakesh; Dudek, Piotr; Hilt, Oliver

    2010-01-01

    A controlled AlGaN surface preparation method avails to improve the performance of GaN-based HEMT devices. A comparative investigation of chemical treatments by (1:10) NH 4OH:H 2O and (1:10) HCl:H 2O solutions for AlGaN surface preparation by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) is reported. The XPS data clearly reveal that the native oxide on AlGaN was composed of Al 2O 3, Ga 2O 3 and NO compounds. These compounds were etched off partially or completely by both the chemical treatments, namely NH 4OH or HCl solutions, independently. The HCl treatment etches out Al 2O 3 completely from native oxide unlike NH 4OH treatment. The HCl treatment results in larger amount of carbon segregation on AlGaN surfaces, however it removes all oxides' compounds faster than NH 4OH treatment. The AFM results reveal the improvement of surface morphology by both the chemical treatments leading to the surface roughness RMS values of 0.24 nm and 0.21 nm for NH 4OH and HCl treated AlGaN layers, respectively.

  20. Electrical properties of n-type AlGaN with high Si concentration

    NASA Astrophysics Data System (ADS)

    Takeda, Kunihiro; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu

    2016-05-01

    The electrical properties of Si-doped AlGaN layers (AlN molar fractions: 0.03-0.06) with the donor concentrations (N D) from 8.8 × 1017 to 4.5 × 1020 cm-3 were investigated by variable-temperature Hall effect measurement using the van der Pauw method. A minimum resistivity of 3.6 × 10-4 Ω cm was obtained for Si-doped AlGaN with a smooth surface at room temperature. We found that the activation energy of the Si donor is affected by the Coulomb interaction in the AlGaN layer with N D values from 8.8 × 1017 to 2.5 × 1020 cm-3. In several AlGaN layers, the free-electron concentration did not vary with sample temperature, as expected in the case of degeneracy. The localization of GaN in the AlGaN layer was speculated as a cause of degeneracy of samples.

  1. Piezoelectric domains in the AlGaN hexagonal microrods: Effect of crystal orientations

    NASA Astrophysics Data System (ADS)

    Sivadasan, A. K.; Mangamma, G.; Bera, Santanu; Kamruddin, M.; Dhara, Sandip

    2016-05-01

    Presently, the piezoelectric materials are finding tremendous applications in the micro-mechanical actuators, sensors, and self-powered devices. In this context, the studies pertaining to piezoelectric properties of materials in the different size ranges are very important for the scientific community. The III-nitrides are exceptionally important, not only for optoelectronic but also for their piezoelectric applications. In the present study, we synthesized AlGaN via self-catalytic vapor-solid mechanism by atmospheric pressure chemical vapor deposition technique on AlN base layer over intrinsic Si(100) substrate. The growth process is substantiated using X-ray diffraction and X-ray photoelectron spectroscopy. The Raman and photoluminescence studies reveal the formation of AlGaN microrods in the wurtzite phase and ensure the high optical quality of the crystalline material. The single crystalline, direct wide band gap and hexagonally shaped AlGaN microrods are studied for understanding the behavior of the crystallites under the application of constant external electric field using the piezoresponse force microscopy. The present study is mainly focused on understanding the behavior of induced polarization for the determination of piezoelectric coefficient of AlGaN microrod along the c-axis and imaging of piezoelectric domains in the sample originating because of the angular inclination of AlGaN microrods with respect to its AlN base layers.

  2. Polarization-induced electrical conductivity in ultra-wide band gap AlGaN alloys

    NASA Astrophysics Data System (ADS)

    Armstrong, Andrew M.; Allerman, Andrew A.

    2016-11-01

    Unintentionally doped (UID) AlGaN epilayers graded over Al compositions of 80%-90% and 80%-100% were grown by metal organic vapor phase epitaxy and were electrically characterized using contactless sheet resistance (Rsh) and capacitance-voltage (C-V) measurements. Strong electrical conductivity in the UID graded AlGaN epilayers resulted from polarization-induced doping and was verified by the low resistivity of 0.04 Ω cm for the AlGaN epilayer graded over 80%-100% Al mole fraction. A free electron concentration (n) of 4.8 × 1017 cm-3 was measured by C-V for Al compositions of 80%-100%. Average electron mobility ( μ ¯ ) was calculated from Rsh and n data for three ranges of Al composition grading, and it was found that UID AlGaN graded from 88%-96% had μ ¯ = 509 cm2/V s. The combination of very large band gap energy, high μ ¯ , and high n for UID graded AlGaN epilayers make them attractive as a building block for high voltage power electronic devices such as Schottky diodes and field effect transistors.

  3. Scale-estimation of quantum coherent energy transport in multiple-minima systems

    PubMed Central

    Farrow, Tristan; Vedral, Vlatko

    2014-01-01

    A generic and intuitive model for coherent energy transport in multiple minima systems coupled to a quantum mechanical bath is shown. Using a simple spin-boson system, we illustrate how a generic donor-acceptor system can be brought into resonance using a narrow band of vibrational modes, such that the transfer efficiency of an electron-hole pair (exciton) is made arbitrarily high. Coherent transport phenomena in nature are of renewed interest since the discovery that a photon captured by the light-harvesting complex (LHC) in photosynthetic organisms can be conveyed to a chemical reaction centre with near-perfect efficiency. Classical explanations of the transfer use stochastic diffusion to model the hopping motion of a photo-excited exciton. This accounts inadequately for the speed and efficiency of the energy transfer measured in a series of recent landmark experiments. Taking a quantum mechanical perspective can help capture the salient features of the efficient part of that transfer. To show the versatility of the model, we extend it to a multiple minima system comprising seven-sites, reminiscent of the widely studied Fenna-Matthews-Olson (FMO) light-harvesting complex. We show that an idealised transport model for multiple minima coupled to a narrow-band phonon can transport energy with arbitrarily high efficiency. PMID:24980547

  4. Phosphor-free white light-emitting diode with laterally distributed multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Park, Il-Kyu; Kim, Ja-Yeon; Kwon, Min-Ki; Cho, Chu-Young; Lim, Jae-Hong; Park, Seong-Ju

    2008-03-01

    A phosphor-free white light-emitting diode (LED) was fabricated with laterally distributed blue and green InGaN /GaN multiple quantum wells (MQWs) grown by a selective area growth method. Photoluminescence and electroluminescence (EL) spectra of the LED showed emission peaks corresponding to the individual blue and green MQWs. The integrated EL intensity ratio of green to blue emission varied from 2.5 to 6.5 with the injection current below 300mA, but remained constant at high injection currents above 300mA. The stability of the emission color at high currents is attributed to parallel carrier injection into both MQWs.

  5. Terahertz study of ultrafast carrier dynamics in InGaN/GaN multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Porte, H. P.; Turchinovich, D.; Cooke, D. G.; Jepsen, P. Uhd

    2009-11-01

    Ultrafast carrier dynamics in InGaN/GaN multiple quantum wells is measured by time-resolved terahertz spectroscopy. The built-in piezoelectric field is initially screened by photoexcited, polarized carriers, and is gradullay restored as the carriers recombine. We observe a nonexponential decay of the carrier density. Time-integrated photoluminescence spectra have shown a complete screening of the built-in piezoelectric field at high excitation fluences. We also observe that the terahertz conductivity spectra differs from simple Drude conductivity, describing the response of free carriers, and are well fitted by the Drude-Smith model.

  6. Sensitivity Enhancement in Multiple-Quantum NMR Experiments with CPMG Detection

    NASA Astrophysics Data System (ADS)

    Lim, Kwang Hun; Nguyen, Tuan; Mazur, Tanya; Wemmer, David E.; Pines, Alexander

    2002-07-01

    We present a modified multiple-quantum (MQ) experiment, which implements the Carr-Purcell-Meiboom-Gill (CPMG) detection scheme in the static MQ NMR experiment proposed by W. S. Warren et al. (1980, J. Chem. Phys.73, 2084-2099) and exploited further by O. N. Antzutkin and R. Tycko (1999, J. Chem. Phys.110, 2749-2752). It is demonstrated that a significant enhancement in the sensitivity can be achieved by acquiring echo trains in the MQ experiments for static powder samples. The modified scheme employing the CPMG detection was superior to the original MQ experiment, in particular for the carbonyl carbon with a very large chemical shift anisotropy.

  7. Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates

    SciTech Connect

    Bryan, Zachary Bryan, Isaac; Sitar, Zlatko; Collazo, Ramón; Mita, Seiji; Tweedie, James

    2015-06-08

    Since the band ordering in AlGaN has a profound effect on the performance of UVC light emitting diodes (LEDs) and even determines the feasibility of surface emitting lasers, the polarization properties of emitted light from c-oriented AlGaN and AlGaN-based laser structures were studied over the whole composition range, as well as various strain states, quantum confinements, and carrier densities. A quantitative relationship between the theoretical valence band separation, determined using k•p theory, and the experimentally measured degree of polarization is presented. Next to composition, strain was found to have the largest influence on the degree of polarization while all other factors were practically insignificant. The lowest crossover point from the transverse electric to transverse magnetic polarized emission of 245 nm was found for structures pseudomorphically grown on AlN substrates. This finding has significant implications toward the efficiency and feasibility of surface emitting devices below this wavelength.

  8. Botulinum toxin detection using AlGaN /GaN high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Wang, Yu-Lin; Chu, B. H.; Chen, K. H.; Chang, C. Y.; Lele, T. P.; Tseng, Y.; Pearton, S. J.; Ramage, J.; Hooten, D.; Dabiran, A.; Chow, P. P.; Ren, F.

    2008-12-01

    Antibody-functionalized, Au-gated AlGaN /GaN high electron mobility transistors (HEMTs) were used to detect botulinum toxin. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaN /GaN HEMT drain-source current showed a rapid response of less than 5s when the target toxin in a buffer was added to the antibody-immobilized surface. We could detect a range of concentrations from 1to10ng/ml. These results clearly demonstrate the promise of field-deployable electronic biological sensors based on AlGaN /GaN HEMTs for botulinum toxin detection.

  9. Degenerate ground states and multiple bifurcations in a two-dimensional q-state quantum Potts model.

    PubMed

    Dai, Yan-Wei; Cho, Sam Young; Batchelor, Murray T; Zhou, Huan-Qiang

    2014-06-01

    We numerically investigate the two-dimensional q-state quantum Potts model on the infinite square lattice by using the infinite projected entangled-pair state (iPEPS) algorithm. We show that the quantum fidelity, defined as an overlap measurement between an arbitrary reference state and the iPEPS ground state of the system, can detect q-fold degenerate ground states for the Z_{q} broken-symmetry phase. Accordingly, a multiple bifurcation of the quantum ground-state fidelity is shown to occur as the transverse magnetic field varies from the symmetry phase to the broken-symmetry phase, which means that a multiple-bifurcation point corresponds to a critical point. A (dis)continuous behavior of quantum fidelity at phase transition points characterizes a (dis)continuous phase transition. Similar to the characteristic behavior of the quantum fidelity, the magnetizations, as order parameters, obtained from the degenerate ground states exhibit multiple bifurcation at critical points. Each order parameter is also explicitly demonstrated to transform under the Z_{q} subgroup of the symmetry group of the Hamiltonian. We find that the q-state quantum Potts model on the square lattice undergoes a discontinuous (first-order) phase transition for q=3 and q=4 and a continuous phase transition for q=2 (the two-dimensional quantum transverse Ising model).

  10. Dynamic light-matter coupling across multiple spatial dimensions in a quantum dots-in-a-well heterostructure

    SciTech Connect

    Prasankumar, Rohit P; Taylor, Antoinette J; Chow, W W; Attaluri, R S; Shenoi, R

    2009-01-01

    Semiconductor heterostructures incorporating multiple degrees of spatial confinement have recently attracted substantial interest for photonic applications. One example is the quantum dots-in-a-well (DWELL) heterostructure, consisting of zero-dimensional quantum dots embedded in a two-dimensional quantum well and surrounded by three-dimensional bulk material. This structure offers several advantages over conventional photonic devices while providing a model system for the study of light-matter interactions across multiple spatial dimensions. Here, we use ultrafast differential transmission spectroscopy2 to temporally and spectrally resolve density-dependent carrier dynamics in a DWELL heterostructure. We observe excitation-dependent shifts of the quantum dot energy levels at low densities, while at high densities we observe an anomalous induced absorption at the quantum dot excited state that is correlated to quantum well population dynamics. These studies of density-dependent light-matter interactions across multiple coupled spatial dimensions provide clues to the underlying physics governing quantum dot properties, with important implications for DWELL-based photonic devices.

  11. Quantum confinement in semiconductor nanofilms: Optical spectra and multiple exciton generation

    NASA Astrophysics Data System (ADS)

    Khmelinskii, Igor; Makarov, Vladimir I.

    2016-04-01

    We report optical absorption and photoluminescence (PL) spectra of Si and SnO2 nanocrystalline films in the UV-vis-NIR range, featuring discrete bands resulting from transverse quantum confinement, observed in the optical spectra of nanofilms for the first time ever. The film thickness ranged from 3.9 to 12.2 nm, depending on the material. The results are interpreted within the particle-in-a-box model, with infinite walls. The calculated values of the effective electron mass are independent on the film thickness and equal to 0.17mo (Si) and 0.21mo (SnO2), with mo the mass of the free electron. The second calculated model parameter, the quantum number n of the HOMO (valence band), was also thickness-independent: 8.00 (Si) and 7.00 (SnO2). The transitions observed in absorption all start at the level n and correspond to Δn = 1, 2, 3, …. The photoluminescence bands exhibit large Stokes shifts, shifting to higher energies with increased excitation energy. In effect, nanolayers of Si, an indirect-gap semiconductor, behave as a direct-gap semiconductor, as regards the transverse-quantized level system. A prototype Si-SnO2 nanofilm photovoltaic cell demonstrated photoelectron quantum yields achieving 2.5, showing clear evidence of multiple exciton generation, for the first time ever in a working nanofilm device.

  12. Gain properties of doped GaAs/AlGaAs multiple quantum well avalanche photodiode structures

    NASA Technical Reports Server (NTRS)

    Menkara, H. M.; Wagner, B. K.; Summers, C. J.

    1995-01-01

    A comprehensive characterization has been made of the static and dynamical response of conventional and multiple quantum well (MQW) avalanche photodiodes (APDs). Comparison of the gain characteristics at low voltages between the MQW and conventional APDs show a direct experimental confirmation of a structure-induced carrier multiplication due to interband impact ionization. Similar studies of the bias dependence of the excess noise characteristics show that the low-voltage gain is primarily due to electron ionization in the MQW-APDS, and to both electron and hole ionization in the conventional APDS. For the doped MQW APDS, the average gain per stage was calculated by comparing gain data with carrier profile measurements, and was found to vary from 1.03 at low bias to 1.09 near avalanche breakdown.

  13. Large-Format AlGaN PIN Photodiode Arrays for UV Images

    NASA Technical Reports Server (NTRS)

    Aslam, Shahid; Franz, David

    2010-01-01

    A large-format hybridized AlGaN photodiode array with an adjustable bandwidth features stray-light control, ultralow dark-current noise to reduce cooling requirements, and much higher radiation tolerance than previous technologies. This technology reduces the size, mass, power, and cost of future ultraviolet (UV) detection instruments by using lightweight, low-voltage AlGaN detectors in a hybrid detector/multiplexer configuration. The solar-blind feature eliminates the need for additional visible light rejection and reduces the sensitivity of the system to stray light that can contaminate observations.

  14. AlGaN Channel Transistors for Power Management and Distribution

    NASA Technical Reports Server (NTRS)

    VanHove, James M.

    1996-01-01

    Contained within is the Final report of a Phase 1 SBIR program to develop AlGaN channel junction field effect transistors (JFET). The report summarizes our work to design, deposit, and fabricate JFETS using molecular beam epitaxy growth AlGaN. Nitride growth is described using a RF atomic nitrogen plasma source. Processing steps needed to fabricate the device such as ohmic source-drain contacts, reactive ion etching, gate formation, and air bride fabrication are documented. SEM photographs of fabricated power FETS are shown. Recommendations are made to continue the effort in a Phase 2 Program.

  15. Upper bounds on the error probabilities and asymptotic error exponents in quantum multiple state discrimination

    SciTech Connect

    Audenaert, Koenraad M. R.; Mosonyi, Milán

    2014-10-01

    We consider the multiple hypothesis testing problem for symmetric quantum state discrimination between r given states σ₁, …, σ{sub r}. By splitting up the overall test into multiple binary tests in various ways we obtain a number of upper bounds on the optimal error probability in terms of the binary error probabilities. These upper bounds allow us to deduce various bounds on the asymptotic error rate, for which it has been hypothesized that it is given by the multi-hypothesis quantum Chernoff bound (or Chernoff divergence) C(σ₁, …, σ{sub r}), as recently introduced by Nussbaum and Szkoła in analogy with Salikhov's classical multi-hypothesis Chernoff bound. This quantity is defined as the minimum of the pairwise binary Chernoff divergences min{sub jquantum Chernoff bound is always achieved.

  16. Resonant optical properties of AlGaAs/GaAs multiple-quantum-well based Bragg structure at the second quantum state

    NASA Astrophysics Data System (ADS)

    Chen, Y.; Maharjan, N.; Liu, Z.; Nakarmi, M. L.; Chaldyshev, V. V.; Kundelev, E. V.; Poddubny, A. N.; Vasil'ev, A. P.; Yagovkina, M. A.; Shakya, N. M.

    2017-03-01

    An AlGaAs/GaAs multiple-quantum-well based resonant Bragg structure was designed to match the optical Bragg resonance with the exciton-polariton resonance at the second quantum state in the GaAs quantum wells. The sample structure with 60 periods of AlGaAs/GaAs quantum wells was grown on a semi-insulating GaAs substrate by molecular beam epitaxy. Angle- and temperature-dependent photoluminescence, optical reflectance, and electro-reflectance spectroscopies were employed to study the resonant optical properties of the Bragg structure. Broad and enhanced optical and electro-reflectance features were observed when the Bragg resonance was tuned to the second quantum state of the GaAs quantum well excitons, manifesting a strong light-matter interaction. From the electro-optical experiments, we found the electro-reflectance features related to the transitions of x(e2-hh2) and x(e2-hh1) excitons. The excitonic transition x(e2-hh1), which is prohibited at zero electric field, was allowed by a DC bias due to the brake of symmetry and increased overlap of the electron and hole wave functions caused by the electric field. By tuning the Bragg resonance frequency, we have observed the electro-reflectance feature related to the second quantum state up to room temperature, which evidences a robust light-matter interaction in the resonant Bragg structure.

  17. Theory of multiple quantum dot formation in strained-layer heteroepitaxy

    NASA Astrophysics Data System (ADS)

    Du, Lin; Maroudas, Dimitrios

    2016-07-01

    We develop a theory for the experimentally observed formation of multiple quantum dots (QDs) in strained-layer heteroepitaxy based on surface morphological stability analysis of a coherently strained epitaxial thin film on a crystalline substrate. Using a fully nonlinear model of surface morphological evolution that accounts for a wetting potential contribution to the epitaxial film's free energy as well as surface diffusional anisotropy, we demonstrate the formation of multiple QD patterns in self-consistent dynamical simulations of the evolution of the epitaxial film surface perturbed from its planar state. The simulation predictions are supported by weakly nonlinear analysis of the epitaxial film surface morphological stability. We find that, in addition to the Stranski-Krastanow instability, long-wavelength perturbations from the planar film surface morphology can trigger a nonlinear instability, resulting in the splitting of a single QD into multiple QDs of smaller sizes, and predict the critical wavelength of the film surface perturbation for the onset of the nonlinear tip-splitting instability. The theory provides a fundamental interpretation for the observations of "QD pairs" or "double QDs" and other multiple QDs reported in experimental studies of epitaxial growth of semiconductor strained layers and sets the stage for precise engineering of tunable-size nanoscale surface features in strained-layer heteroepitaxy by exploiting film surface nonlinear, pattern forming phenomena.

  18. Investigation of Photoluminescence and Photocurrent in InGaAsP/InP Strained Multiple Quantum Well Heterostructures

    NASA Technical Reports Server (NTRS)

    Raisky, O. Y.; Wang, W. B.; Alfano, R. R.; Reynolds, C. L., Jr.; Swaminathan, V.

    1997-01-01

    Multiple quantum well InGaAsP/InP p-i-n laser heterostructures with different barrier thicknesses have been investigated using photoluminescence (PL) and photocurrent (PC) measurements. The observed PL spectrum and peak positions are in good agreement with those obtained from transfer matrix calculations. Comparing the measured quantum well PC with calculated carrier escape rates, the photocurrent changes are found to be governed by the temperature dependence of the electron escape time.

  19. Optically induced excitonic electroabsorption in a periodically delta-doped InGaAs/GaAs multiple quantum well structure

    NASA Technical Reports Server (NTRS)

    Larsson, A.; Maserjian, J.

    1991-01-01

    Large optically induced Stark shifts have been observed in a periodically delta-doped InGaAs/GaAs multiple quantum well structure. With an excitation intensity of 10 mW/sq cm, an absolute quantum well absorption change of 7000/cm was measured with a corresponding differential absorption change as high as 80 percent. The associated maximum change in the quantum well refractive index is 0.04. This material is promising for device development for all-optical computing and signal processing.

  20. Studies of heteronuclear dipolar interactions between spin-1/2 and quadrupolar nuclei by using REDOR during multiple quantum evolution

    NASA Astrophysics Data System (ADS)

    Pruski, M.; Bailly, A.; Lang, D. P.; Amoureux, J.-P.; Fernandez, C.

    1999-06-01

    A new technique for measurements of dipolar interactions in rotating solids is presented that combines the capabilities of multiple quantum magic angle spinning (MQMAS) with the rotational echo double resonance (REDOR). It employs the dipolar recoupling between spin-1/2 ( I) and quadrupolar ( S) nuclei by applying a series of π pulses to the I spins. In contrast to the previously reported MQ-REDOR method, the recoupling sequence is applied during the triple quantum, rather than single quantum evolution. As the dipolar effect is enhanced by the MQ coherence order, this new technique exhibits improved sensitivity toward weak dipolar interactions.

  1. The rigorous stochastic matrix multiplication scheme for the calculations of reduced equilibrium density matrices of open multilevel quantum systems

    NASA Astrophysics Data System (ADS)

    Chen, Xin

    2014-04-01

    Understanding the roles of the temporary and spatial structures of quantum functional noise in open multilevel quantum molecular systems attracts a lot of theoretical interests. I want to establish a rigorous and general framework for functional quantum noises from the constructive and computational perspectives, i.e., how to generate the random trajectories to reproduce the kernel and path ordering of the influence functional with effective Monte Carlo methods for arbitrary spectral densities. This construction approach aims to unify the existing stochastic models to rigorously describe the temporary and spatial structure of Gaussian quantum noises. In this paper, I review the Euclidean imaginary time influence functional and propose the stochastic matrix multiplication scheme to calculate reduced equilibrium density matrices (REDM). In addition, I review and discuss the Feynman-Vernon influence functional according to the Gaussian quadratic integral, particularly its imaginary part which is critical to the rigorous description of the quantum detailed balance. As a result, I establish the conditions under which the influence functional can be interpreted as the average of exponential functional operator over real-valued Gaussian processes for open multilevel quantum systems. I also show the difference between the local and nonlocal phonons within this framework. With the stochastic matrix multiplication scheme, I compare the normalized REDM with the Boltzmann equilibrium distribution for open multilevel quantum systems.

  2. The rigorous stochastic matrix multiplication scheme for the calculations of reduced equilibrium density matrices of open multilevel quantum systems

    SciTech Connect

    Chen, Xin

    2014-04-21

    Understanding the roles of the temporary and spatial structures of quantum functional noise in open multilevel quantum molecular systems attracts a lot of theoretical interests. I want to establish a rigorous and general framework for functional quantum noises from the constructive and computational perspectives, i.e., how to generate the random trajectories to reproduce the kernel and path ordering of the influence functional with effective Monte Carlo methods for arbitrary spectral densities. This construction approach aims to unify the existing stochastic models to rigorously describe the temporary and spatial structure of Gaussian quantum noises. In this paper, I review the Euclidean imaginary time influence functional and propose the stochastic matrix multiplication scheme to calculate reduced equilibrium density matrices (REDM). In addition, I review and discuss the Feynman-Vernon influence functional according to the Gaussian quadratic integral, particularly its imaginary part which is critical to the rigorous description of the quantum detailed balance. As a result, I establish the conditions under which the influence functional can be interpreted as the average of exponential functional operator over real-valued Gaussian processes for open multilevel quantum systems. I also show the difference between the local and nonlocal phonons within this framework. With the stochastic matrix multiplication scheme, I compare the normalized REDM with the Boltzmann equilibrium distribution for open multilevel quantum systems.

  3. Aluminum incorporation efficiencies in A- and C-plane AlGaN grown by MOVPE

    NASA Astrophysics Data System (ADS)

    Dong-Yue, Han; Hui-Jie, Li; Gui-Juan, Zhao; Hong-Yuan, Wei; Shao-Yan, Yang; Lian-Shan, Wang

    2016-04-01

    The aluminum incorporation efficiencies in nonpolar A-plane and polar C-plane AlGaN films grown by metalorganic vapour phase epitaxy (MOVPE) are investigated. It is found that the aluminum content in A-plane AlGaN film is obviously higher than that in the C-plane sample when the growth temperature is above 1070 °C. The high aluminum incorporation efficiency is beneficial to fabricating deep ultraviolet optoelectronic devices. Moreover, the influences of the gas inlet ratio, the V/III ratio, and the chamber pressure on the aluminum content are studied. The results are important for growing the AlGaN films, especially nonpolar AlGaN epilayers. Project supported by the National Natural Science Foundation of China (Grant Nos. 61504128, 61504129, 61274041, and 11275228), the National Basic Research Program of China (Grant No. 2012CB619305), the National High Technology Research and Development Program of China (Grant Nos. 2014AA032603, 2014AA032609, and 2015AA010801), and the Guangdong Provincial Scientific and Technologic Planning Program, China (Grant No. 2014B010119002).

  4. Multiple quantum oscillation frequencies in YBa2Cu3O6+δ and bilayer splitting

    NASA Astrophysics Data System (ADS)

    Garcia-Aldea, David; Chakravarty, Sudip

    2010-10-01

    Experiments have revealed multiple quantum oscillation frequencies in underdoped high-temperature superconductor YBa2Cu3O6+δ, corresponding to approximately 10% doping, which contains CuO bilayers in the unit cell. These unit cells are further coupled along the c-axis by a tunneling matrix element. A model of the energy dispersion that has its roots in the previously determined electronic structure, combined with twofold commensurate density waves, reveals multiple electron and hole pockets. To the extent that quasiparticles of the reconstructed Fermi surface have finite residues, however small, the formation of Landau levels is the cause of these oscillations, and the bilayer splitting and warping of the electronic dispersion along the direction perpendicular to the CuO-planes are firm consequences. The goal here is to explore this possibility from various directions and provide a better understanding of the rapidly developing experimental situation involving multiple frequencies. An important conclusion is that bilayer splitting is considerably renormalized from the value obtained from band structure calculations. It would be extremely interesting to perform these experiments for higher values of doping. We roughly expect the splitting of the frequencies to increase with doping, but the full picture may be more complex because the density wave order parameter is also expected to decrease with doping, vanishing around the middle of the superconducting dome.

  5. Strong multiple-capture effect in slow Ar^17+-Ar collisions: a quantum mechanical analysis

    NASA Astrophysics Data System (ADS)

    Salehzadeh, Arash; Kirchner, Tom

    2012-10-01

    A recent X-ray spectroscopy experiment on 255 keV Ar^17+-Ar collisions [1] provided evidence for strong multiple-electron capture --- a feature that is supported by classical trajectory Monte Carlo calculations for similar collision systems [2]. We have coupled a quantum-mechanical independent-electron model calculation for the Ar^17+-Ar system with (semi-) phenomenological Auger and radiative cascade models to test these findings. The capture calculations are performed using the basis generator method and include single-particle states on the projectile up to the 10th shell. The cross sections obtained for shell-specific multiple capture are fed into a stabilization scheme proposed in Ref. [3] in order to obtain n-specific cross sections for apparent single (and double) capture that in turn are fed into a radiative cascade code [1] to obtain X-ray emission intensities that can be compared with the experimental data. Good agreement is found for the Lyman series from n=3 to n=7 if the multiple-capture contributions are included, whereas calculations that ignore them are in stark conflict with the data. [4pt] [1] M. Trassinelli et al., J. Phys. B 45, 085202 (2012)[0pt] [2] S. Otranto and R. Olson, Phys. Rev. A 83, 032710 (2011)[0pt] [3] R. Ali et al., Phys. Rev A 49, 3586 (1994).

  6. Quantum-well intermixing for the control of second-order nonlinear effects in AlGaAs multiple-quantum-well waveguides.

    PubMed

    Street, M W; Whitbread, N D; Hutchings, D C; Arnold, J M; Marsh, J H; Aitchison, J S; Kennedy, G T; Sibbett, W

    1997-11-01

    We present experimental evidence to demonstrate the feasibility of a promising new quasi-phase-matching technique in AlGaAs multiple-quantum-well waveguides. Non-phase-matched second-harmonic-generation measurements indicate that, for sub-half-bandgap excitation near 1.5 microm , quantum-well intermixing by impurity-free vacancy disordering results in a reduction of the nonlinear susceptibility chi((2))(zxy) (~340 pm/V) by 17%. Relatively low intermixed waveguide losses, and the high spatial resolution of the impurity-free vacancy disordering process, suggest that periodic intermixing along the direction of propagation should lead to useful frequency-conversion efficiencies.

  7. Hot exciton cooling and multiple exciton generation in PbSe quantum dots.

    PubMed

    Kumar, Manoj; Vezzoli, Stefano; Wang, Zilong; Chaudhary, Varun; Ramanujan, Raju V; Gurzadyan, Gagik G; Bruno, Annalisa; Soci, Cesare

    2016-11-16

    Multiple exciton generation (MEG) is a promising process to improve the power conversion efficiency of solar cells. PbSe quantum dots (QDs) have shown reasonably high MEG quantum yield (QY), although the photon energy threshold for this process is still under debate. One of the reasons for this inconsistency is the complicated competition of MEG and hot exciton cooling, especially at higher excited states. Here, we investigate MEG QY and the origin of the photon energy threshold for MEG in PbSe QDs of three different sizes by studying the transient absorption (TA) spectra, both at the band gap (near infrared, NIR) and far from the band gap energy (visible range). The comparison of visible TA spectra and dynamics for different pump wavelengths, below, around and above the MEG threshold, provides evidence of the role of the Σ transition in slowing down the exciton cooling process that can help MEG to take over the phonon relaxation process. The universality of this behavior is confirmed by studying QDs of three different sizes. Moreover, our results suggest that MEG QY can be determined by pump-probe experiments probed above the band gap.

  8. Enhanced carrier multiplication in engineered quasi-type-II quantum dots

    PubMed Central

    Cirloganu, Claudiu M.; Padilha, Lazaro A.; Lin, Qianglu; Makarov, Nikolay S.; Velizhanin, Kirill A.; Luo, Hongmei; Robel, Istvan; Pietryga, Jeffrey M.; Klimov, Victor I.

    2014-01-01

    One process limiting the performance of solar cells is rapid cooling (thermalization) of hot carriers generated by higher-energy solar photons. In principle, the thermalization losses can be reduced by converting the kinetic energy of energetic carriers into additional electron-hole pairs via carrier multiplication (CM). While being inefficient in bulk semiconductors this process is enhanced in quantum dots, although not sufficiently high to considerably boost the power output of practical devices. Here we demonstrate that thick-shell PbSe/CdSe nanostructures can show almost a fourfold increase in the CM yield over conventional PbSe quantum dots, accompanied by a considerable reduction of the CM threshold. These structures enhance a valence-band CM channel due to effective capture of energetic holes into long-lived shell-localized states. The attainment of the regime of slowed cooling responsible for CM enhancement is indicated by the development of shell-related emission in the visible observed simultaneously with infrared emission from the core. PMID:24938462

  9. Perovskite light-emitting diodes based on solution-processed self-organized multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Wang, Nana; Cheng, Lu; Ge, Rui; Zhang, Shuting; Miao, Yanfeng; Zou, Wei; Yi, Chang; Sun, Yan; Cao, Yu; Yang, Rong; Wei, Yingqiang; Guo, Qiang; Ke, You; Yu, Maotao; Jin, Yizheng; Liu, Yang; Ding, Qingqing; di, Dawei; Yang, Le; Xing, Guichuan; Tian, He; Jin, Chuanhong; Gao, Feng; Friend, Richard H.; Wang, Jianpu; Huang, Wei

    2016-11-01

    Organometal halide perovskites can be processed from solutions at low temperatures to form crystalline direct-bandgap semiconductors with promising optoelectronic properties. However, the efficiency of their electroluminescence is limited by non-radiative recombination, which is associated with defects and leakage current due to incomplete surface coverage. Here we demonstrate a solution-processed perovskite light-emitting diode (LED) based on self-organized multiple quantum wells (MQWs) with excellent film morphologies. The MQW-based LED exhibits a very high external quantum efficiency of up to 11.7%, good stability and exceptional high-power performance with an energy conversion efficiency of 5.5% at a current density of 100 mA cm-2. This outstanding performance arises because the lower bandgap regions that generate electroluminescence are effectively confined by perovskite MQWs with higher energy gaps, resulting in very efficient radiative decay. Surprisingly, there is no evidence that the large interfacial areas between different bandgap regions cause luminescence quenching.

  10. Bound states for multiple Dirac-δ wells in space-fractional quantum mechanics

    SciTech Connect

    Tare, Jeffrey D. Esguerra, Jose Perico H.

    2014-01-15

    Using the momentum-space approach, we obtain bound states for multiple Dirac-δ wells in the framework of space-fractional quantum mechanics. Introducing first an attractive Dirac-comb potential, i.e., Dirac comb with strength −g (g > 0), in the space-fractional Schrödinger equation we show that the problem of obtaining eigenenergies of a system with N Dirac-δ wells can be reduced to a problem of obtaining the eigenvalues of an N × N matrix. As an illustration we use the present matrix formulation to derive expressions satisfied by the bound-state energies of N = 1, 2, 3 delta wells. We also obtain the corresponding wave functions and express them in terms of Fox's H-function.

  11. Oxidation effects on cleaved multiple quantum well surfaces in air observed by scanning probe microscopy

    NASA Astrophysics Data System (ADS)

    Howells, S.; Gallagher, M. J.; Chen, T.; Pax, P.; Sarid, D.

    1992-08-01

    The paper presents the first atomic force microscopy (AFM) images of cleaved InGaAs/InP multiple quantum wells and compares them with scanning tunneling microscopy (STM) images taken of the same heterostructure. The images were stable in air for over a day. Based on these results, it is proposed that the mechanism for contrast in the images is due to an oxide layer that grows primarily on the InGaAs wells and not on the InP barriers. Both STM and AFM clearly resolve the individual wells of the heterostructure, although STM measured a larger corrugation than an AFM. STM also exhibited superior lateral resolution of about 2 nm, while AFM had a lateral resolution of approximately 6 nm.

  12. Exciton effects in the index of refraction of multiple quantum wells and superlattices

    NASA Technical Reports Server (NTRS)

    Kahen, K. B.; Leburton, J. P.

    1986-01-01

    Theoretical calculations of the index of refraction of multiple quantum wells and superlattices are presented. The model incorporates both the bound and continuum exciton contributions for the gamma region transitions. In addition, the electronic band structure model has both superlattice and bulk alloy properties. The results indicate that large light-hole masses, i.e., of about 0.23, produced by band mixing effects, are required to account for the experimental data. Furthermore, it is shown that superlattice effects rapidly decrease for energies greater than the confining potential barriers. Overall, the theoretical results are in very good agreement with the experimental data and show the importance of including exciton effects in the index of refraction.

  13. Phonon-Induced Dephasing of Excitons in Semiconductor Quantum Dots: Multiple Exciton Generation, Fission, and Luminescence

    NASA Astrophysics Data System (ADS)

    Madrid, Angeline; Kim, Hyeon-Deuk; Habenicht, Bradley; Prezhdo, Oleg

    2010-03-01

    Phonon-induced dephasing processes that govern optical line widths, multiple exciton (ME) generation (MEG), and ME fission (MEF) in semiconductor quantum dots (QDs) are investigated by ab initio molecular dynamics simulation. Using Si QDs as an example, we propose that MEF occurs by phonon-induced dephasing and, for the first time, estimate its time scale to be 100 fs. In contrast, luminescence and MEG dephasing times are all sub-10 fs. Generally, dephasing is faster for higher-energy and higher-order excitons and increased temperatures. MEF is slow because it is facilitated only by low-frequency acoustic modes. Luminescence and MEG couple to both acoustic and optical modes of the QD, as well as ligand vibrations. The detailed atomistic simulation of the dephasing processes advances understanding of exciton dynamics in QDs and other nanoscale materials.

  14. Order dependence of the profile of the intensities of multiple-quantum coherences

    SciTech Connect

    Lundin, A. A.; Zobov, V. E.

    2015-05-15

    A modification of the widespread phenomenological model theory of multiple-quantum (MQ) nuclear magnetic resonance spectra of a single cluster of correlated spins has been developed. In contrast to the mentioned theory, the size distribution of such clusters has been consistently taken into account. To obtain the distribution, solutions for the amplitudes of the expansion in the complete set of orthogonal operators are used. Expressions specifying the dependence of the profile of the intensities of MQ coherences on their number n (order) have been obtained. The total form of the dependence has been evaluated by means of the numerical implementation of the resulting expressions. The asymptotic expressions for large n values (wings of the spectrum) have been obtained analytically by the saddle-point method. It has been shown that the dependence under study has a Gaussian central part and exponential wings. The results obtained are in agreement with the previous calculations for some model systems and existing experimental data.

  15. Ultraviolet laser and photodetector of CdZnS/ZnS multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Tauchi, T.; Yamada, Y.; Ohno, T.; Mullins, J. T.; Masumoto, Y.

    1993-09-01

    Ultraviolet (UV) lasers have been constructed for the first time from multiple quantum well (MQW) heterostructures of CdxZn1-xS/ZnS (x=0.11-0.31) strained-layer superlattices. Stimulated emission can be observed either under optical pumping at RT or under pulsed injection at 30 K in the spectral range of 357-390 nm. Structures of the laser were fabricated by the gaseous low-pressure MOCVD method. A spectral narrowing in the emission spectrum with increasing current in the UV injection diode was clearly observed in the vicinity of 375 nm at 30 K. An UV photodetector has been successfully prepared from this MQW system, in which a spectral responsivity at 366 nm exhibits a high efficiency of about 60 mA/W.

  16. Ultraviolet laser and photodetector of CdZnS/ZnS multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Tauchi, T.; Yamada, Y.; Ohno, T.; Mullins, J. T.; Masumoto, Y.

    1993-09-01

    Ultraviolet (UV) lasers have been constructed for the first time from multiple quantum well (MQW) heterostructures of Cd xZn 1- xS/ZnS ( x=0.11-0.31) strained-layer superlattices. Stimulated emission can be observed either under optical pumping at RT or under pulsed injection at 30 K in the spectral range of 357-390 nm. Structures of the laser were fabricated by the gaseous low-pressure MOCVD method. A spectral narrowing in the emission spectrum with increasing current in the UV injection diode was clearly observed in the vicinity of 375 nm at 30 K. An UV photodetector has been successfully prepared from this MQW system, in which a spectral responsivity at 366 nm exhibits a high efficiency of about 60 mA/W.

  17. Probing degradation in complex engineering silicones by 1H multiple quantum NMR

    SciTech Connect

    Maxwell, R S; Chinn, S C; Giuliani, J; Herberg, J L

    2007-09-05

    Static {sup 1}H Multiple Quantum Nuclear Magnetic Resonance (MQ NMR) has recently been shown to provide detailed insight into the network structure of pristine silicon based polymer systems. The MQ NMR method characterizes the residual dipolar couplings of the silicon chains that depend on the average molecular weight between physical or chemical constraints. Recently, we have employed MQ NMR methods to characterize the changes in network structure in a series of complex silicone materials subject to numerous degradation mechanisms, including thermal, radiative, and desiccative. For thermal degradation, MQ NMR shows that a combination of crosslinking due to post-curing reactions as well as random chain scissioning reactions occurs. For radiative degradation, the primary mechanisms are via crosslinking both in the network and at the interface between the polymer and the inorganic filler. For samples stored in highly desiccating environments, MQ NMR shows that the average segmental dynamics are slowed due to increased interactions between the filler and the network polymer chains.

  18. Germanium-tin multiple quantum well on silicon avalanche photodiode for photodetection at two micron wavelength

    NASA Astrophysics Data System (ADS)

    Dong, Yuan; Wang, Wei; Lee, Shuh Ying; Lei, Dian; Gong, Xiao; Khai Loke, Wan; Yoon, Soon-Fatt; Liang, Gengchiau; Yeo, Yee-Chia

    2016-09-01

    We report the demonstration of a germanium-tin multiple quantum well (Ge0.9Sn0.1 MQW)-on-Si avalanche photodiode (APD) for light detection near the 2 μm wavelength range. The measured spectral response covers wavelengths from 1510 to 2003 nm. An optical responsivity of 0.33 A W-1 is achieved at 2003 nm due to the internal avalanche gain. In addition, a thermal coefficient of breakdown voltage is extracted to be 0.053% K-1 based on the temperature-dependent dark current measurement. As compared to the traditional 2 μm wavelength APDs, the Si-based APD is promising for its small excess noise factor, less stringent demand on temperature stability, and its compatibility with silicon technology.

  19. Strain-balanced InGaN/GaN multiple quantum wells

    SciTech Connect

    Van Den Broeck, D. M.; Hosalli, A. M.; Bedair, S. M.; Bharrat, D.; El-Masry, N. A.

    2014-07-21

    InGaN/GaN multiple quantum well (MQW) structures suffer from a high amount of compressive strain in the InGaN wells and the accompanied piezoelectric field resulting in both a blue shift in emission and a reduction of emission intensity. We report the growth of In{sub x}Ga{sub 1−x}N/GaN “strain-balanced” multiple quantum wells (SBMQWs) grown on thick In{sub y}Ga{sub 1−y}N templates for x > y by metal organic chemical vapor deposition. SBMQWs consist of alternating layers of In{sub x}Ga{sub 1−x}N wells and GaN barriers under compressive and tensile stress, respectively, which have been lattice matched to a thick In{sub y}Ga{sub 1−y}N template. Growth of the In{sub y}Ga{sub 1−y}N template is also detailed in order to achieve thick, relaxed In{sub y}Ga{sub 1−y}N grown on GaN without the presence of V-grooves. When compared to conventional In{sub x}Ga{sub 1−x}N/GaN MQWs grown on GaN, the SBMQW structures exhibit longer wavelength emission and higher emission intensity for the same InN mole fraction due to a reduction in the well strain and piezoelectric field. By matching the average lattice constant of the MQW active region to the lattice constant of the In{sub y}Ga{sub 1−y}N template, essentially an infinite number of periods can be grown using the SBMQW growth method without relaxation-related effects. SBMQWs can be utilized to achieve longer wavelength emission in light emitting diodes without the use of excess indium and can be advantageous in addressing the “green gap.”.

  20. Performance of 128×128 solar-blind AlGaN ultraviolet focal plane arrays

    NASA Astrophysics Data System (ADS)

    Yuan, Yongang; Zhang, Yan; Liu, Dafu; Chu, Kaihui; Wang, Ling; Li, Xiangyang

    2009-07-01

    Ozone layer intensively absorbs 240nm to 285 nm incidence, when the sunshine goes through stratospheric. There is almost no UVC (200nm-280nm) band radiation existing below stratospheric. Because the radiation target presents a strong contrast between atmosphere and background, solar-blind band radiation is very useful. Wide band gap materials, especially III-V nitride materials, have attracted extensive interest. The direct band gap of GaN and A1N is 3.4 and 6.2 eV, respectively. Since they are miscible with each other and form a complete series of AlGaN alloys, AlGaN has direct band gaps from 3.4 to 6.2 eV, corresponding to cutoff wavelengths from 365 to 200 nm. A back-illuminated hybrid FPA has been developed by Shanghai Institute of Technical Physics Chinese Academy of Science. This paper reports the performance of the 128x128 solar-blind AlGaN UV Focal Plane Arrays (FPAs). More and more a CTIA (capacitivetransimpedance) readout circuit architecture has been proven to be well suited for AlGaN detectors arrays. The bared readout circuit was first tested to find out optimal analog reference voltage. Second, this ROIC was tested in a standard 20-pin shielded dewar at 115 K to 330K. Then, a new test system was set up to obtain test UV FPA noise, swing voltage, data valid time, operating speed, dynamic range, UV response etc. The results show that 128x128 back-illuminated AlGaN PIN detector SNR is as high as 74db at the speed of above30 frame per second. Also, some noise test method is mentioned.

  1. Iii-V Compound Multiple Quantum Well Based Modulator and Switching Devices.

    NASA Astrophysics Data System (ADS)

    Hong, Songcheol

    A general formalism to study the absorption and photocurrent in multiple quantum well is provided with detailed consideration of quantum confined Stark shift, exciton binding energy, line broadening, tunneling, polarization, and strain effects. Results on variation of exciton size, binding energies and transition energies as a function electric field and well size have been presented. Inhomogeneous line broadening of exciton lines due to interface roughness, alloy disorder and well to well size fluctuation is calculated. The potential of material tailoring by introducing strain for specific optical response is discussed. Theoretical and experimental results on excitonic and band-to-band absorption spectra in strained multi-quantum well structures are shown. I also report on polarization dependent optical absorption for excitonic and interband transitions in lattice matched and strained multiquantum well structures in presence of transverse electric field. Photocurrent in a p-i(MQW)-n diode with monochromatic light is examined with respect to different temperatures and intensities. The negative resistance of I-V characteristic of the p-i-n diode is based on the quantum confined Stark effect of the heavy hole excitonic transition in a multiquantum well. This exciton based photocurrent characteristic allows efficient switching. A general purpose low power optical logic device using the controller-modulator concept bas been proposed and realized. The controller is a heterojunction phototransistor with multiquantum wells in the base-collector depletion region. This allows an amplified photocurrent controlled voltage feedback with low light intensity levels. Detailed analysis of the sensitivity of this device in various modes of operation is studied. Studies are also presented on the cascadability of the device as well as its integrating -thresholding properties. A multiquantum well heterojunction bipolar transistor (MHBT), which has N^+ -p^+-i(MQW)-N structure has been

  2. Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature.

    PubMed

    Li, K H; Liu, X; Wang, Q; Zhao, S; Mi, Z

    2015-02-01

    Ultraviolet laser radiation has been adopted in a wide range of applications as diverse as water purification, flexible displays, data storage, sterilization, diagnosis and bioagent detection. Success in developing semiconductor-based, compact ultraviolet laser sources, however, has been extremely limited. Here, we report that defect-free disordered AlGaN core-shell nanowire arrays, formed directly on a Si substrate, can be used to achieve highly stable, electrically pumped lasers across the entire ultraviolet AII (UV-AII) band (∼320-340 nm) at low temperatures. The laser threshold is in the range of tens of amps per centimetre squared, which is nearly three orders of magnitude lower than those of previously reported quantum-well lasers. This work also reports the first demonstration of electrically injected AlGaN-based ultraviolet lasers monolithically grown on a Si substrate, and offers a new avenue for achieving semiconductor lasers in the ultraviolet B (UV-B) (280-320 nm) and ultraviolet C (UV-C) (<280 nm) bands.

  3. Material and design engineering of (Al)GaN for high-performance avalanche photodiodes and intersubband applications

    NASA Astrophysics Data System (ADS)

    Razeghi, M.; Bayram, C.

    2009-05-01

    Numerous applications in scientific, medical, and military areas demand robust, compact, sensitive, and fast ultraviolet (UV) detection. Our (Al)GaN photodiodes pose high avalanche gain and single-photon detection efficiency that can measure up to these requirements. Inherit advantage of back-illumination in our devices offers an easier integration and layout packaging via flip-chip hybridization for UV focal plane arrays that may find uses from space applications to hostile-agent detection. Thanks to the recent (Al)GaN material optimization, III-Nitrides, known to have fast carrier dynamics and short relaxation times, are employed in (Al)GaN based superlattices that absorb in near-infrared regime. In this work, we explain the origins of our high performance UV APDs, and employ our (Al)GaN material knowledge for intersubband applications. We also discuss the extension of this material engineering into the far infrared, and even the terahertz (THz) region.

  4. Molecular beam epitaxial growth and characterization of Al(Ga)N nanowire deep ultraviolet light emitting diodes and lasers

    NASA Astrophysics Data System (ADS)

    Mi, Z.; Zhao, S.; Woo, S. Y.; Bugnet, M.; Djavid, M.; Liu, X.; Kang, J.; Kong, X.; Ji, W.; Guo, H.; Liu, Z.; Botton, G. A.

    2016-09-01

    We report on the detailed molecular beam epitaxial growth and characterization of Al(Ga)N nanowire heterostructures on Si and their applications for deep ultraviolet light emitting diodes and lasers. The nanowires are formed under nitrogen-rich conditions without using any metal catalyst. Compared to conventional epilayers, Mg-dopant incorporation is significantly enhanced in nearly strain- and defect-free Al(Ga)N nanowire structures, leading to efficient p-type conduction. The resulting Al(Ga)N nanowire LEDs exhibit excellent performance, including a turn-on voltage of ∼5.5 V for an AlN nanowire LED operating at 207 nm. The design, fabrication, and performance of an electrically injected AlGaN nanowire laser operating in the UV-B band is also presented.

  5. Use of external cavity quantum cascade laser compliance voltage in real-time trace gas sensing of multiple chemicals

    SciTech Connect

    Phillips, Mark C.; Taubman, Matthew S.; Kriesel, Jason M.

    2015-02-08

    We describe a prototype trace gas sensor designed for real-time detection of multiple chemicals. The sensor uses an external cavity quantum cascade laser (ECQCL) swept over its tuning range of 940-1075 cm-1 (9.30-10.7 µm) at a 10 Hz repetition rate.

  6. High Contrast Fabry-Perot Multiple Quantum Well Modulators and Systems.

    NASA Astrophysics Data System (ADS)

    Cheung, Siu Kwan

    Multiple Quantum Well (MQW) symmetric Fabry-Perot optical modulators, which utilize field-induced changes in optical absorption and index of refraction due to the Quantum Confined Stark Effect (QCSE), are presented using InGaAs/GaAs system. An on/off contrast ratio exceeding 1200:1 has been obtained using MBE-grown symmetric Fabry -Perot structure which consists of two AlAs/GaAs quarter -wavelength dielectric mirrors and an InGaAs/GaAs rectangular MQW cavity. A tuning range of about 10 nm has been observed for an applied voltage change of ~15 V. Theoretical and experimental studies, including the excitonic absorption in MQW layers, QCSE, optical characterization and device performance, and system modeling are presented. Analytic expressions have been obtained for the optimal design of the symmetric Fabry-Perot modulators. The calculations are based on the optical transfer matrix and the two effective interfaces approach under the plane wave approximation. Optical characterizations and measurements using Spectrophotometer, Variable Angle Spectroscopic Ellipsometry (VASE) and computer -controlled Argon-pumped Ti:Sapphire laser measuring setup are described. Comparisons between theoretical and experimental results indicate a 0.037% deviation of the Fabry-Perot mode for the nontunable structure with projected dynamic range of 38.7 dB and a 0.2% deviation for the tunable modulator from the calculated results. The good matchings of the experimental and calculated Fabry-Perot modes indicate the validity of the theoretical models. Related applications, including the design and performance study of Heterostructure Acoustic Charge Transport Spatial Light Modulators (HACT/SLMs), tunable narrowband optical filters and reflectivity-tunable vertical surface emitting laser structures, are also presented.

  7. Phase control of Goos-Hänchen shift via biexciton coherence in a multiple quantum well

    NASA Astrophysics Data System (ADS)

    Asadpour, Seyyed Hossein; Nasehi, Rajab; Soleimani, H. Rahimpour; Mahmoudi, M.

    2015-09-01

    The behavior of the Goos-Hänchen (GH) shifts of the reflected and transmitted probe and signal pulses through a cavity containing four-level GaAs/AlGaAs multiple quantum wells with 15 periods of 17.5 nm GaAs wells and 15-nm Al0.3Ga0.7As barriers is theoretically discussed. The biexciton coherence set up by two coupling fields can induce the destructive interference to control the absorption and gain properties of probe field under appropriate conditions. It is realized that for the specific values of the intensities and the relative phase of applied fields, the simultaneous negative or positive GH shift in the transmitted and reflected light beam can be obtained via amplification in a probe light. It is found that by adjusting the controllable parameters, the GH shifts can be switched between the large positive and negative values in the medium. Moreover, the effect of exciton spin relaxation on the GH shift has also been discussed. We find that the exciton spin relaxation can manipulate the behavior of GH shift in the reflected and transmitted probe beam through the cavity. We show that by controlling the incident angles of probe beam and under certain conditions, the GH shifts in the reflected and transmitted probe beams can become either negative or positive corresponding to the superluminal or subluminal light propagation. Our proposed model may supply a new prospect in technological applications for the light amplification in optical sensors working on quantum coherence impacts in solid-state systems.

  8. Long term operation of high quantum efficiency GaAs(Cs,O) photocathodes using multiple recleaning by atomic hydrogen

    NASA Astrophysics Data System (ADS)

    Orlov, D. A.; Krantz, C.; Wolf, A.; Jaroshevich, A. S.; Kosolobov, S. N.; Scheibler, H. E.; Terekhov, A. S.

    2009-09-01

    Atomic hydrogen, produced by thermal dissociation of H2 molecules inside a hot tungsten capillary, is shown to be an efficient tool for multiple recleaning of degraded surfaces of high quantum efficiency transmission-mode GaAs photocathodes within an ultrahigh vacuum (UHV) multichamber photoelectron gun. Ultraviolet quantum yield photoemission spectroscopy has been used to study the removal of surface pollutants and the degraded (Cs,O)-activation layer during the cleaning procedure. For photocathodes grown by the liquid-phase epitaxy technique, the quantum efficiency is found to be stable at about 20% over a large number of atomic hydrogen cleaning cycles. A slow degradation of the quantum efficiency is observed for photocathodes grown by metal-organic chemical vapor deposition, although they reached a higher initial quantum efficiency of about 30%-35%. Study of the spatial distributions of photoluminescence intensity on these photocathodes proved that this overall degradation is likely due to insertion of a dislocation network into the mechanically strained photocathode heterostructures during multiple heating cycles and is not due to the atomic hydrogen treatment itself.

  9. Study of multiple InAs/GaAs quantum-well structures by electroreflectance spectroscopy

    SciTech Connect

    Bolshakov, A. S. Chaldyshev, V. V. Babichev, A. V.; Kudryashov, D. A.; Gudovskikh, A. S.; Morozov, I. A.; Sobolev, M. S.; Nikitina, E. V.

    2015-11-15

    A periodic Bragg heterostructure with three ultrathin InAs/GaAs quantum wells in a period is fabricated and studied. The splitting energy of exciton transitions in quantum wells is determined by the electroreflectance- spectroscopy method and numerical quantum-mechanical calculation. The significant influence of interference effects on individual peak areas in the electroreflectance spectrum is detected.

  10. Controllably releasing long-lived quantum memory for photonic polarization qubit into multiple spatially-separate photonic channels

    PubMed Central

    Chen, Lirong; Xu, Zhongxiao; Zeng, Weiqing; Wen, Yafei; Li, Shujing; Wang, Hai

    2016-01-01

    We report an experiment in which long-lived quantum memories for photonic polarization qubits (PPQs) are controllably released into any one of multiple spatially-separate channels. The PPQs are implemented with an arbitrarily-polarized coherent signal light pulses at the single-photon level and are stored in cold atoms by means of electromagnetic-induced-transparency scheme. Reading laser pulses propagating along the direction at a small angle relative to quantum axis are applied to release the stored PPQs into an output channel. By changing the propagating directions of the read laser beam, we controllably release the retrieved PPQs into 7 different photonic output channels, respectively. At a storage time of δt = 5 μs, the least quantum-process fidelity in 7 different output channels is ~89%. At one of the output channels, the measured maximum quantum-process fidelity for the PPQs is 94.2% at storage time of δt = 0.85 ms. At storage time of 6 ms, the quantum-process fidelity is still beyond the bound of 78% to violate the Bell’s inequality. The demonstrated controllable release of the stored PPQs may extend the capabilities of the quantum information storage technique. PMID:27667262

  11. Controllably releasing long-lived quantum memory for photonic polarization qubit into multiple spatially-separate photonic channels

    NASA Astrophysics Data System (ADS)

    Chen, Lirong; Xu, Zhongxiao; Zeng, Weiqing; Wen, Yafei; Li, Shujing; Wang, Hai

    2016-09-01

    We report an experiment in which long-lived quantum memories for photonic polarization qubits (PPQs) are controllably released into any one of multiple spatially-separate channels. The PPQs are implemented with an arbitrarily-polarized coherent signal light pulses at the single-photon level and are stored in cold atoms by means of electromagnetic-induced-transparency scheme. Reading laser pulses propagating along the direction at a small angle relative to quantum axis are applied to release the stored PPQs into an output channel. By changing the propagating directions of the read laser beam, we controllably release the retrieved PPQs into 7 different photonic output channels, respectively. At a storage time of δt = 5 μs, the least quantum-process fidelity in 7 different output channels is ~89%. At one of the output channels, the measured maximum quantum-process fidelity for the PPQs is 94.2% at storage time of δt = 0.85 ms. At storage time of 6 ms, the quantum-process fidelity is still beyond the bound of 78% to violate the Bell’s inequality. The demonstrated controllable release of the stored PPQs may extend the capabilities of the quantum information storage technique.

  12. Thermal degradation in a trimodal poly(dimethylsiloxane) network studied by (1)H multiple quantum NMR.

    PubMed

    Giuliani, Jason R; Gjersing, Erica L; Chinn, Sarah C; Jones, Ticora V; Wilson, Thomas S; Alviso, Cynthia T; Herberg, Julie L; Pearson, Mark A; Maxwell, Robert S

    2007-11-15

    Thermal degradation of a filled, cross-linked siloxane material synthesized from poly(dimethylsiloxane) chains of three different average molecular weights and with two different cross-linking species has been studied by (1)H multiple quantum (MQ) NMR methods. Multiple domains of polymer chains were detected by MQ NMR exhibiting residual dipolar coupling () values of 200 and 600 Hz, corresponding to chains with high average molecular weight between cross-links and chains with low average molecular weight between cross-links or near the multifunctional cross-linking sites. Characterization of the values and changes in distributions present in the material were studied as a function of time at 250 degrees C and indicate significant time-dependent degradation. For the domains with low , a broadening in the distribution was observed with aging time. For the domain with high , increases in both the mean and the width in were observed with increasing aging time. Isothermal thermal gravimetric analysis reveals a 3% decrease in weight over 20 h of aging at 250 degrees C. Degraded samples also were analyzed by traditional solid-state (1)H NMR techniques, and off-gassing products were identified by solid-phase microextraction followed by gas chromatography-mass spectrometry. The results, which will be discussed here, suggest that thermal degradation proceeds by complex competition between oxidative chain scissioning and postcuring cross-linking that both contribute to embrittlement.

  13. Thermal degradation in a trimodal PDMS network by 1H Multiple Quantum NMR

    SciTech Connect

    Giuliani, J R; Gjersing, E L; Chinn, S C; Jones, T V; Wilson, T S; Alviso, C T; Herberg, J L; Pearson, M A; Maxwell, R S

    2007-06-06

    Thermal degradation of a filled, crosslinked siloxane material synthesized from PDMS chains of three different average molecular weights and with two different crosslinking species has been studied by {sup 1}H Multiple Quantum (MQ) NMR methods. Multiple domains of polymer chains were detected by MQ NMR exhibiting Residual Dipolar Coupling (<{Omega}{sub d}>) values of 200 Hz and 600 Hz, corresponding to chains with high average molecular weight between crosslinks and chains with low average molecular weight between crosslinks or near the multifunctional crosslinking sites. Characterization of the <{Omega}{sub d}> values and changes in <{Omega}{sub d}> distributions present in the material were studied as a function of time at 250 C and indicates significant time dependent degradation. For the domains with low <{Omega}{sub d}>, a broadening in the distribution was observed with aging time. For the domain with high <{Omega}{sub d}>, increases in both the mean <{Omega}{sub d}> and the width in <{Omega}{sub d}> were observed with increasing aging time. Isothermal Thermal Gravimetric Analysis (TGA) reveals a 3% decrease in weight over 20 hours of aging at 250 C. Degraded samples also were analyzed by traditional solid state {sup 1}H NMR techniques and offgassing products were identified by Solid Phase MicroExtraction followed by Gas Chromatography-Mass Spectrometry (SPME GC-MS). The results, which will be discussed here, suggest that thermal degradation proceeds by complex competition between oxidative chain scissioning and post-curing crosslinking that both contribute to embrittlement.

  14. Bias Selectable Dual Band AlGaN Ultra-violet Detectors

    NASA Technical Reports Server (NTRS)

    Yan, Feng; Miko, Laddawan; Franz, David; Guan, Bing; Stahle, Carl M.

    2007-01-01

    Bias selectable dual band AlGaN ultra-violet (UV) detectors, which can separate UV-A and UV-B using one detector in the same pixel by bias switching, have been designed, fabricated and characterized. A two-terminal n-p-n photo-transistor-like structure was used. When a forward bias is applied between the top electrode and the bottom electrode, the detectors can successfully detect W-A and reject UV-B. Under reverse bias, they can detect UV-B and reject UV-A. The proof of concept design shows that it is feasible to fabricate high performance dual-band UV detectors based on the current AlGaN material growth and fabrication technologies.

  15. Status of AlGaN based focal plane arrays for UV solar blind detection

    NASA Astrophysics Data System (ADS)

    Reverchon, Jean-Luc; Mazzeo, Giovanni; Dussaigne, Amélie; Duboz, Jean-Yves

    2005-10-01

    The fast development of nitrides has given the opportunity to investigate AlGaN as a material for ultraviolet solar blind detection in competition with technologies based on photocathodes, MCP intensifiers, back thinned CCD or hybrid CMOS focal plane arrays. All of the them must be associated to UV blocking filters. These new detectors present both an intrinsic spectral selectivity and an extremely low dark current at room temperature. First we will present the ultimate properties of the AlGaN based devices. These spectral properties are analysed in regards to the sharp cut off required for solar blind detection around 280nm, and we will quantify how the stringent difficulties to achieve solar blind filters can be reduced. We also investigated the electrical capabilities of Schottky diodes or Metal-Semiconductor-Metal (MSM) technologies to detect extremely low UV signal. We will especially present results from a linear array based on a CCD readout multiplexor.

  16. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect

    Kuppulingam, B. Singh, Shubra Baskar, K.

    2014-04-24

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  17. Theoretical study of electrolyte gate AlGaN /GaN field effect transistors

    NASA Astrophysics Data System (ADS)

    Bayer, M.; Uhl, C.; Vogl, P.

    2005-02-01

    We predict the sensitivity of solution gate AlGaN /GaN field effect transistors to pH values of the electrolyte and to charged adsorbates at the semiconductor-electrolyte interface. Invoking the site-binding model for the chemical reactions at the oxidic semiconductor-electrolyte interface and taking into account the large polarization fields within the nitride heterostructure, the spatial charge and potential distribution have been calculated self-consistently both in the semiconductor and the electrolyte. In addition, the source-drain current is calculated and its sensitivity to the electrolyte's pH value is studied systematically. Comparison with experiment shows good agreement. A significantly enhanced resolution is predicted for AlGaN /GaN structures of N-face polarity.

  18. Influence of substrate miscut angle on surface morphology and luminescence properties of AlGaN

    SciTech Connect

    Kusch, Gunnar Edwards, Paul R.; Bruckbauer, Jochen; Martin, Robert W.; Li, Haoning; Parbrook, Peter J.; Sadler, Thomas C.

    2014-03-03

    The influence of substrate miscut on Al{sub 0.5}Ga{sub 0.5} N layers was investigated using cathodoluminescence (CL) hyperspectral imaging and secondary electron imaging in an environmental scanning electron microscope. The samples were also characterized using atomic force microscopy and high resolution X-ray diffraction. It was found that small changes in substrate miscut have a strong influence on the morphology and luminescence properties of the AlGaN layers. Two different types are resolved. For low miscut angle, a crack-free morphology consisting of randomly sized domains is observed, between which there are notable shifts in the AlGaN near band edge emission energy. For high miscut angle, a morphology with step bunches and compositional inhomogeneities along the step bunches, evidenced by an additional CL peak along the step bunches, are observed.

  19. Formation mechanism of highly luminescent silica capsules incorporating multiple hydrophobic quantum dots with various emission wavelengths.

    PubMed

    Li, Chunliang; Murase, Norio

    2013-12-01

    A synthesis process was reconsidered for encapsulating hydrophobic quantum dots (QDs) into silica capsules with high photoluminescent (PL) efficiency. The process comprises three steps: silanization of QD surfaces, seed formation by assembly of the QDs, and coating of the QD seeds with a silica shell. Analysis of the encapsulation mechanism enabled this process to be adapted for application to CdSe-based core-shell QDs with various organic ligands such as oleic acid and with various emission wavelengths. Formation of the seeds is the key step in synthesizing the silica capsules, so that they have high PL efficiency. Due to the differences in QD size and in the affinity of the ligands on their surfaces, the concentration of QDs used in the synthesis must be optimized to maximize emission efficiency. Contrary to an initial assumption, several ligands remained on the QD surfaces even after the QDs were transferred from organic solution to water. This greatly affected the size and PL efficiency of the seeds. Judicious selection of the conditions for seed and silica capsule synthesis resulted in seeds with PL efficiency greater than 70% and in silica capsules encapsulating multiple CdSe/CdZnS QDs with PL efficiency as high as 41%. Silica capsules incorporating QDs with various emission peak wavelengths from green to red were also prepared. The process presented serves as a guideline for encapsulating various types of hydrophobic QDs into silica capsules for biological tagging applications.

  20. Investigation of enzymatic C-P bond formation using multiple quantum HCP nuclear magnetic resonance spectroscopy.

    PubMed

    Hu, Kaifeng; Werner, Williard J; Allen, Kylie D; Wang, Susan C

    2015-04-01

    The biochemical mechanism for the formation of the C-P-C bond sequence found in l-phosphinothricin, a natural product with antibiotic and herbicidal activity, remains unclear. To obtain further insight into the catalytic mechanism of PhpK, the P-methyltransferase responsible for the formation of the second C-P bond in l-phosphinothricin, we utilized a combination of stable isotopes and two-dimensional nuclear magnetic resonance spectroscopy. Exploiting the newly emerged Bruker QCI probe (Bruker Corp.), we specifically designed and ran a (13) C-(31) P multiple quantum (1) H-(13) C-(31) P (HCP) experiment in (1) H-(31) P two-dimensional mode directly on a PhpK-catalyzed reaction mixture using (13) CH3 -labeled methylcobalamin as the methyl group donor. This method is particularly advantageous because minimal sample purification is needed to maximize product visualization. The observed 3:1:1:3 multiplet specifically and unequivocally illustrates direct bond formation between (13) CH3 and (31) P. Related nuclear magnetic resonance experiments based upon these principles may be designed for the study of enzymatic and/or synthetic chemical reaction mechanisms.

  1. Optimization of TCR and heat transport in group-IV multiple-quantum-well microbolometers

    NASA Astrophysics Data System (ADS)

    Morea, Matthew; Gu, Kevin; Savikhin, Victoria; Fenrich, Colleen S.; Pop, Eric; Harris, James S.

    2016-09-01

    Group-IV semiconductors have the opportunity to have an equivalent or better temperature coefficient of resistance (TCR) than other microbolometer thermistor materials. By using multiple-quantum-well (MQW) structures, their TCR values can be optimized due to a confinement of carriers. Through two approaches - an activation energy approximation and a custom Monte Carlo transfer matrix method - we simulated this effect for a combination of Group-IV semiconductors and their alloys (e.g., SiGe and GeSn) to find the highest possible TCR, while keeping in mind the critical thicknesses of such layers in a MQW epitaxial stack. We calculated the TCR for a critical-thickness-limited Ge0.8Sn0.2/Ge MQW device to be about -1.9 %/K. Although this TCR is lower than similar SiGe/Si MQW thermistors, GeSn offers possible advantages in terms of fabricating suspended devices with its interesting etch-stop properties shown in previous literature. Furthermore, using finite element modeling of heat transport, we looked at another key bolometer parameter: the thermal time constant. The dimensions of a suspended Ge microbolometer's supporting legs were fine-tuned for a target response time of 5 ms, incorporating estimations for the size effects of the nanowire-like legs on thermal conductivity.

  2. Recombination Pathways in Green InGaN/GaN Multiple Quantum Wells

    NASA Astrophysics Data System (ADS)

    Lin, Tao; Kuo, Hao Chung; Jiang, Xiao Dong; Feng, Zhe Chuan

    2017-02-01

    This paper reports the transient photoluminescence (PL) properties of an InGaN/GaN multiple quantum well (MQW) light-emitting diode (LED) with green emission. Recombination of localized excitons was proved to be the main microscopic mechanism of green emission in the sample. The PL dynamics were ascribed to two pathways of the exciton recombination, corresponding to the fast decay and the slow decay, respectively. The origins of slow decay and fast decay were assigned to local compositional fluctuations of indium and thickness variations of InGaN layers, respectively. Furthermore, the contributions of two decay pathways to the green PL were found to vary at different emission photon energy. The fraction of fast decay pathway decreased with decreasing photon energy. The slow radiative PL from deep localized exciton recombination suffered less suppression from non-radiative delocalization process, for the higher requested activation energy. All these results supported a clear microscopy mechanism of excitation-emission process of the green MQW LED structure.

  3. Recombination Pathways in Green InGaN/GaN Multiple Quantum Wells.

    PubMed

    Lin, Tao; Kuo, Hao Chung; Jiang, Xiao Dong; Feng, Zhe Chuan

    2017-12-01

    This paper reports the transient photoluminescence (PL) properties of an InGaN/GaN multiple quantum well (MQW) light-emitting diode (LED) with green emission. Recombination of localized excitons was proved to be the main microscopic mechanism of green emission in the sample. The PL dynamics were ascribed to two pathways of the exciton recombination, corresponding to the fast decay and the slow decay, respectively. The origins of slow decay and fast decay were assigned to local compositional fluctuations of indium and thickness variations of InGaN layers, respectively. Furthermore, the contributions of two decay pathways to the green PL were found to vary at different emission photon energy. The fraction of fast decay pathway decreased with decreasing photon energy. The slow radiative PL from deep localized exciton recombination suffered less suppression from non-radiative delocalization process, for the higher requested activation energy. All these results supported a clear microscopy mechanism of excitation-emission process of the green MQW LED structure.

  4. Modeling and simulation of magnetic resonance imaging based on intermolecular multiple quantum coherences

    NASA Astrophysics Data System (ADS)

    Cai, Congbo; Dong, Jiyang; Cai, Shuhui; Cheng, En; Chen, Zhong

    2006-11-01

    Intermolecular multiple quantum coherences (iMQCs) have many potential applications since they can provide interaction information between different molecules within the range of dipolar correlation distance, and can provide new contrast in magnetic resonance imaging (MRI). Because of the non-localized property of dipolar field, and the non-linear property of the Bloch equations incorporating the dipolar field term, the evolution behavior of iMQC is difficult to deduce strictly in many cases. In such cases, simulation studies are very important. Simulation results can not only give a guide to optimize experimental conditions, but also help analyze unexpected experimental results. Based on our product operator matrix and the K-space method for dipolar field calculation, the MRI simulation software was constructed, running on Windows operation system. The non-linear Bloch equations are calculated by a fifth-order Cash-Karp Runge-Kutta formulism. Computational time can be efficiently reduced by separating the effects of chemical shifts and strong gradient field. Using this software, simulation of different kinds of complex MRI sequences can be done conveniently and quickly on general personal computers. Some examples were given. The results were discussed.

  5. Ultrafast biexciton spectroscopy in semiconductor quantum dots: evidence for early emergence of multiple-exciton generation

    PubMed Central

    Choi, Younghwan; Sim, Sangwan; Lim, Seong Chu; Lee, Young Hee; Choi, Hyunyong

    2013-01-01

    Understanding multiple-exciton generation (MEG) in quantum dots (QDs) requires in-depth measurements of transient exciton dynamics. Because MEG typically faces competing ultrafast energy-loss intra-band relaxation, it is of central importance to investigate the emerging time-scale of the MEG kinetics. Here, we present ultrafast spectroscopic measurements of the MEG in PbS QDs via probing the ground-state biexciton transients. Specifically, we directly compare the biexciton spectra with the single-exciton ones before and after the intra-band relaxation. Early emergence of MEG is evidenced by observing transient Stark shift and quasi-instantaneous linewidth broadening, both of which take place before the intra-band relaxation. Photon-density-dependent study shows that the broadened biexciton linewidth strongly depends on the MEG-induced extra-exciton generation. Long after the intra-band relaxation, the biexciton broadening is small and the single-exciton state filling is dominant. PMID:24220495

  6. Optical modes within III-nitride multiple quantum well microdisk cavities

    NASA Astrophysics Data System (ADS)

    Mair, R. A.; Zeng, K. C.; Lin, J. Y.; Jiang, H. X.; Zhang, B.; Dai, L.; Botchkarev, A.; Kim, W.; Morkoç, H.; Khan, M. A.

    1998-03-01

    Optical resonance modes have been observed in optically pumped microdisk cavities fabricated from 50 Å/50 Å GaN/AlxGa1-xN(x˜0.07) and 45 Å/45 Å InxGa1-xN/GaN(x˜0.15) multiple quantum well structures. Microdisks, approximately 9 μm in diameter and regularly spaced every 50 μm, were formed by an ion beam etch process. Individual disks were pumped at 300 and 10 K with 290 nm laser pulses focused to a spot size much smaller than the disk diameter. Optical modes corresponding to (i) the radial mode type with a spacing of 49-51 meV (both TE and TM) and (ii) the Whispering Gallery mode with a spacing of 15-16 meV were observed in the GaN microdisk cavities. The spacings of these modes are consistent with those expected for modes within a resonant cavity of cylindrical symmetry, refractive index, and dimensions of the microdisks under investigation. The GaN-based microdisk cavity is compared with its GaAs counterpart and implications regarding future GaN-based microdisk lasers are discussed.

  7. Barrier potential design criteria in multiple-quantum-well-based solar-cell structures

    NASA Technical Reports Server (NTRS)

    Mohaidat, Jihad M.; Shum, Kai; Wang, W. B.; Alfano, R. R.

    1994-01-01

    The barrier potential design criteria in multiple-quantum-well (MQW)-based solar-cell structures is reported for the purpose of achieving maximum efficiency. The time-dependent short-circuit current density at the collector side of various MQW solar-cell structures under resonant condition was numerically calculated using the time-dependent Schroedinger equation. The energy efficiency of solar cells based on the InAs/Ga(y)In(1-y)As and GaAs/Al(x)Ga(1-x)As MQW structues were compared when carriers are excited at a particular solar-energy band. Using InAs/Ga(y)In(1-y)As MQW structures it is found that a maximum energy efficiency can be achieved if the structure is designed with barrier potential of about 450 meV. The efficiency is found to decline linearly as the barrier potential increases for GaAs/Al(x)Ga(1-x)As MQW-structure-based solar cells.

  8. Strained germanium-tin multiple quantum well microdisk resonators towards a light source on silicon

    NASA Astrophysics Data System (ADS)

    Shang, Colleen K.; Chen, Robert; Gupta, Suyog; Huang, Yi-Chiau; Huo, Yijie; Sanchez, Errol; Kim, Yihwan; Kamins, Theodore I.; Saraswat, Krishna C.; Harris, James S.

    2015-02-01

    Although the development of a monolithically-integrated, silicon-compatible light source has been traditionally limited by the indirect band gaps of Group IV materials, germanium-tin (Ge1-xSnx) is predicted to exhibit direct band gap behavior. In pseudomorphic conditions with materials of smaller lattice constant, the accumulation of compressive strain in Ge1-xSnx counteracts this behavior to prevent the direct band gap transition. One possible approach to compensate for this compressive strain is to introduce tensile strain into the system, which can be achieved by applying an external stressing agent to post-fabricated devices. We describe a suspended Ge0:922Sn0:078 multiple quantum well microdisk resonator cavity strained by 140 nm of highly compressively stressed silicon nitride. Raman shifts and photoluminescence redshifts indicate that an additional 0.23-0.30% strain can be induced in these microdisks with this approach. The ability to tune the optical performance of these resonator structures by strain engineering has the potential to enable the development of low threshold Ge1-xSnx-based lasers on Si.

  9. Germanium-tin interdiffusion in strained Ge/GeSn multiple-quantum-well structure

    NASA Astrophysics Data System (ADS)

    Wang, Wei; Dong, Yuan; Zhou, Qian; Tok, Eng Soon; Yeo, Yee-Chia

    2016-06-01

    The thermal stability and germanium-tin (Ge-Sn) interdiffusion properties were studied in epitaxial Ge/GeSn multiple-quantum-well (MQW) structure. No obvious interdiffusion was observed for annealing temperatures of 300 °C or below, while observable interdiffusion occurred for annealing temperatures of 380 °C and above. High-resolution x-ray diffraction was used to obtain the interdiffusion coefficient by analyzing the decrease rate of Ge/GeSn periodic satellite peaks. The interdiffusion coefficient is much higher, and the activation enthalpy of 1.21 eV is substantially lower in Ge/GeSn MQW structure than that previously reported in silicon-germanium (Si-Ge) systems. When the annealing temperature is increased to above 500 °C, Ge-Sn interdiffusion becomes severe. Some small pits appear on the surface, which should be related to Sn out-diffusion to the Ge cap layer, followed by Sn desorption from the top surface. This work provides insights into the Ge-Sn interdiffusion and Sn segregation behaviors in Ge/GeSn MQW structure, and the thermal budget that may be used for fabrication of devices comprising Ge/GeSn heterostructures.

  10. High-efficiency blue LEDs with thin AlGaN interlayers in InGaN/GaN MQWs grown on Si (111) substrates

    NASA Astrophysics Data System (ADS)

    Kimura, Shigeya; Yoshida, Hisashi; Ito, Toshihide; Okada, Aoi; Uesugi, Kenjiro; Nunoue, Shinya

    2016-02-01

    We demonstrate high-efficiency blue light-emitting diodes (LEDs) with thin AlGaN interlayers in InGaN/GaN multiquantum wells (MQWs) grown on Si (111) substrates. The peak external quantum efficiency (EQE) ηEQE of 82% at room temperature and the hot/cold factor (HCF) of 94% have been obtained by using the functional thin AlGaN interlayers in the MQWs in addition to reducing threading dislocation densities (TDDs) in the blue LEDs. An HCF is defined as ηEQE(85°C)/ηEQE(25°C). The blue LED structures were grown by metal-organic chemical vapor deposition on Si (111) substrates. The MQWs applied as an active layer have 8- pairs of InGaN/AlyGa1-yN/GaN (0<=y<=1) heterostructures. Thinfilm LEDs were fabricated by removing the Si (111) substrates from the grown layers. It is observed by high-resolution transmission electron microscopy and three-dimensional atom probe analysis that the 1 nm-thick AlyGa1-yN interlayers, whose Al content is y=0.3 or less, are continuously formed. EQE and the HCFs of the LEDs with thin Al0.15Ga0.85N interlayers are enhanced compared with those of the samples without the interlayers in the low-current-density region. We consider that the enhancement is due to both the reduction of the nonradiative recombination centers and the increase of the radiative recombination rate mediated by the strain-induced hole carriers indicated by the simulation of the energy band diagram.

  11. Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

    SciTech Connect

    Malinverni, M. Lamy, J.-M.; Martin, D.; Grandjean, N.; Feltin, E.; Dorsaz, J.; Castiglia, A.; Rossetti, M.; Duelk, M.; Vélez, C.

    2014-12-15

    We demonstrate state-of-the-art p-type (Al)GaN layers deposited at low temperature (740 °C) by ammonia molecular beam epitaxy (NH{sub 3}-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGaN quantum well active region. Typical p-type GaN resistivities and contact resistances are 0.4 Ω cm and 5 × 10{sup −4} Ω cm{sup 2}, respectively. As a test bed, we fabricated a hybrid laser structure emitting at 400 nm combining n-type AlGaN cladding and InGaN active region grown by metal-organic vapor phase epitaxy, with the p-doped waveguide and cladding layers grown by NH{sub 3}-MBE. Single-mode ridge-waveguide LD exhibits a threshold voltage as low as 4.3 V for an 800 × 2 μm{sup 2} ridge dimension and a threshold current density of ∼5 kA cm{sup −2} in continuous wave operation. The series resistance of the device is 6 Ω and the resistivity is 1.5 Ω cm, confirming thereby the excellent electrical properties of p-type Al{sub 0.06}Ga{sub 0.94}N:Mg despite the low growth temperature.

  12. Electroabsorption modulators based on bulk GaN films and GaN/AlGaN multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Kao, Chen-Kai; Bhattacharyya, Anirban; Thomidis, Christos; Paiella, Roberto; Moustakas, Theodore D.

    2011-04-01

    Ultraviolet electroabsorption modulators based on bulk GaN films and on GaN/AlGaN multiple quantum wells were developed and characterized. In both types of devices, the absorption edge at room temperature is dominated by excitonic effects and can be strongly modified through the application of an external electric field. In the bulk devices, the applied voltage causes a broadening and quenching of the excitonic absorption, leading to enhanced transmission. In the quantum-well devices, the external field partially cancels the built-in polarization-induced electric fields in the well layers, thereby increasing the absorption. Unlike optical modulators based on smaller-bandgap zinc blende semiconductors, the bulk devices here are shown to provide similar performance levels as the quantum well devices, which is mainly a consequence of the uniquely large exciton binding energies of nitride semiconductors.

  13. VIS-UV ZnCdO/ZnO multiple quantum well nanowires and the quantification of Cd diffusion.

    PubMed

    Lopez-Ponce, M; Nakamura, A; Suzuki, M; Temmyo, J; Agouram, S; Martínez-Tomás, M C; Muñoz-Sanjosé, V; Lefebvre, P; Ulloa, J M; Muñoz, E; Hierro, A

    2014-06-27

    We report on the growth and microstructure analysis of high Cd content ZnCdO/ZnO multiple quantum wells (MQW) within a nanowire. Heterostructures consisting of ten wells with widths from 0.7 to 10 nm are demonstrated, and show photoluminescence emissions ranging from 3.03 to 1.97 eV. The wells with thicknesses ≦̸2 nm have high radiative efficiencies compared to the thickest ones, consistent with the presence of quantum confinement. However, a nanometric analysis of the Cd profile along the heterostructures shows the presence of Cd diffusion from the ZnCdO well to the ZnO barrier. This phenomenon modifies the band structure and the optical properties of the heterostructure, and is considered in order to correctly identify quantum effects in the ZnCdO/ZnO MQWs.

  14. Design and Synthesis of Antiblinking and Antibleaching Quantum Dots in Multiple Colors via Wave Function Confinement.

    PubMed

    Cao, Hujia; Ma, Junliang; Huang, Lin; Qin, Haiyan; Meng, Renyang; Li, Yang; Peng, Xiaogang

    2016-12-07

    Single-molecular spectroscopy reveals that photoluminescence (PL) of a single quantum dot blinks, randomly switching between bright and dim/dark states under constant photoexcitation, and quantum dots photobleach readily. These facts cast great doubts on potential applications of these promising emitters. After ∼20 years of efforts, synthesis of nonblinking quantum dots is still challenging, with nonblinking quantum dots only available in red-emitting window. Here we report synthesis of nonblinking quantum dots covering most part of the visible window using a new synthetic strategy, i.e., confining the excited-state wave functions of the core/shell quantum dots within the core quantum dot and its inner shells (≤ ∼5 monolayers). For the red-emitting ones, the new synthetic strategy yields nonblinking quantum dots with small sizes (∼8 nm in diameter) and improved nonblinking properties. These new nonblinking quantum dots are found to be antibleaching. Results further imply that the PL blinking and photobleaching of quantum dots are likely related to each other.

  15. Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

    SciTech Connect

    Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Rajan, Siddharth

    2016-09-19

    Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and the light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polarization engineered tunnel junctions for ultra-wide bandgap AlGaN (Al mole fraction >50%) materials towards highly efficient UV LEDs. We demonstrate that polarization-induced three dimensional charge is beneficial in reducing tunneling barriers especially for high composition AlGaN tunnel junctions. In addition, the design of graded tunnel junction structures could lead to low tunneling resistance below 10–3 Ω cm2 and low voltage consumption below 1 V (at 1 kA/cm2) for high composition AlGaN tunnel junctions. Experimental demonstration of 292 nm emission was achieved through non-equilibrium hole injection into wide bandgap materials with bandgap energy larger than 4.7 eV, and detailed modeling of tunnel junctions shows that they can be engineered to have low resistance and can enable efficient emitters in the UV-C wavelength range.

  16. Relaxation of compressively-strained AlGaN by inclined threading dislocations

    NASA Astrophysics Data System (ADS)

    Follstaedt, D. M.; Lee, S. R.; Provencio, P. P.; Allerman, A. A.; Floro, J. A.; Crawford, M. H.

    2005-09-01

    Transmission electron microscopy and x-ray diffraction were used to assess the microstructure and strain of AlxGa1-xN(x=0.61-0.64) layers grown on AlN. The compressively-strained AlGaN is partially relaxed by inclined threading dislocations, similar to observations on Si-doped AlGaN by P. Cantu, F. Wu, P. Waltereit, S. Keller, A. E. Romanov, U. K. Mishra, S. P. DenBaars, and J. S. Speck [Appl. Phys. Lett. 83, 674 (2003)]; however, in our material, the dislocations bend before the introduction of any Si. The bending may be initiated by the greater lattice mismatch or the lower dislocation density of our material, but the presence of Si is not necessarily required. The relaxation by inclined dislocations is quantitatively accounted for with the model of A. E. Romanov and J. S. Speck [Appl. Phys. Lett. 83, 2569 (2003)], and we demonstrate the predicted linear dependence of relaxation on layer thickness. Notably, such relaxation was not found in tensile strained AlGaN grown on GaN [J. A. Floro, D. M. Follstaedt, P. Provencio, S. J. Hearne, and S. R. Lee, J. Appl. Phys. 96, 7087 (2004)], even though the same mechanism appears applicable.

  17. Relaxation of compressively strained AlGaN by inclined threading dislocations.

    SciTech Connect

    Follstaedt, David Martin; Lee, Stephen Roger; Crawford, Mary Hagerott; Provencio, Paula Polyak; Allerman, Andrew Alan; Floro, Jerrold Anthony

    2005-06-01

    Transmission electron microscopy and x-ray diffraction were used to assess the microstructure and strain of Al{sub x}Ga{sub 1?x}N(x = 0.61-0.64) layers grown on AlN. The compressively-strained AlGaN is partially relaxed by inclined threading dislocations, similar to observations on Si-doped AlGaN by P. Cantu, F. Wu, P. Waltereit, S. Keller, A. E. Romanov, U. K. Mishra, S. P. DenBaars, and J. S. Speck [Appl. Phys. Lett. 83, 674 (2003) ]; however, in our material, the dislocations bend before the introduction of any Si. The bending may be initiated by the greater lattice mismatch or the lower dislocation density of our material, but the presence of Si is not necessarily required. The relaxation by inclined dislocations is quantitatively accounted for with the model of A. E. Romanov and J. S. Speck [Appl. Phys. Lett. 83, 2569 (2003)], and we demonstrate the predicted linear dependence of relaxation on layer thickness. Notably, such relaxation was not found in tensile strained AlGaN grown on GaN [J. A. Floro, D. M. Follstaedt, P. Provencio, S. J. Hearne, and S. R. Lee, J. Appl. Phys. 96, 7087 (2004)], even though the same mechanism appears applicable.

  18. Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

    DOE PAGES

    Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; ...

    2016-09-19

    Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and the light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polarization engineered tunnel junctions for ultra-wide bandgap AlGaN (Al mole fraction >50%) materials towards highly efficient UV LEDs. We demonstrate that polarization-induced three dimensional charge is beneficial in reducing tunneling barriers especially for high composition AlGaN tunnel junctions. In addition, the design of graded tunnel junction structures could lead to low tunneling resistance below 10–3 Ω cm2 and low voltage consumptionmore » below 1 V (at 1 kA/cm2) for high composition AlGaN tunnel junctions. Experimental demonstration of 292 nm emission was achieved through non-equilibrium hole injection into wide bandgap materials with bandgap energy larger than 4.7 eV, and detailed modeling of tunnel junctions shows that they can be engineered to have low resistance and can enable efficient emitters in the UV-C wavelength range.« less

  19. The role of surface kinetics on composition and quality of AlGaN

    NASA Astrophysics Data System (ADS)

    Bryan, Isaac; Bryan, Zachary; Mita, Seiji; Rice, Anthony; Hussey, Lindsay; Shelton, Christopher; Tweedie, James; Maria, Jon-Paul; Collazo, Ramón; Sitar, Zlatko

    2016-10-01

    Metal-polar, Al-rich AlGaN films were grown on both single crystalline AlN and sapphire substrates. The role of surface morphology and surface kinetics on AlGaN composition is presented. With the reduced dislocation density of the films grown on AlN substrates, atomically smooth bilayer stepped surfaces are achieved with RMS roughness of less than 50 pm for a 5×5 μm2 AFM scan area. By controlling the surface supersaturation through adjusting the growth rate, a transition from 2D nucleation to step flow was observed. The critical misorientation angle for step-bunching in nominal Al0.70Ga0.30N grown with a growth rate of 600 nm/h on AlN substrates was found to be 0.4°. The composition of bilayer stepped AlGaN was strongly dependent on substrate misorientation angle, where a compositional variation by a factor of two for a change in misorientation angle from 0.05 to 0.40° was observed; this is explained by the different surface diffusion lengths of Ga and Al. Step-bunching resulted in strong compositional inhomogeneity as observed by photoluminescence and scanning transmission electron microscopy studies.

  20. Strain and defects in Si-doped (Al)GaN epitaxial layers

    NASA Astrophysics Data System (ADS)

    Forghani, Kamran; Schade, Lukas; Schwarz, Ulrich T.; Lipski, Frank; Klein, Oliver; Kaiser, Ute; Scholz, Ferdinand

    2012-11-01

    Si is the most common dopant in (Al)GaN based devices acting as a donor. It has been observed that Si induces tensile strain in (Al)GaN films, which leads to an increasing tendency for cracking of such films with the increase of Si content and/or the increase of Al content. Based on x-ray investigations, the Si-doped films have a larger in-plane lattice constant than their undoped buffer layers, indicating involvement of a mechanism other than the change of lattice constants expected from an alloying effect. In this work, we present a model about Si dislocation interaction while debating other proposed models in the literature. According to our model, Si atoms are attracted to the strain dipole of edge-type dislocations in (Al)GaN films. It is expected that Si is more incorporated on that side of the dislocation, which is under compression leading to the formation of off-balanced dipoles with reduced compressive component. In response to such off-balanced dipoles—appearing as tensile dominant strain dipoles—the dislocation lines climb in order to accommodate the excess tensile strain. However, this dislocation climb mechanism is hindered by forces exerted by vacancies created due to the climb process. Accordingly, we have observed a lower strain level in our Si doped layers when they contain fewer dislocations. These findings were further supported by x-ray diffraction, transmission electron microscopy, and micro-photoluminescence investigations.

  1. Quantum dynamics of hydrogen interacting with single-walled carbon nanotubes: multiple H-atom adsorbates.

    PubMed

    McAfee, Jason L; Poirier, Bill

    2011-02-21

    In a previous paper [J. L. McAfee and B. Poirier, J. Chem. Phys. 130, 064701 (2009)], using spin-polarized density functional theory (DFT), the authors reported a binding energy of 0.755 eV, for a single hydrogen atom adsorbed on a pristine (unrelaxed) (5,5) single-walled carbon nanotube (SWNT) substrate. A full three-dimensional (3D) potential energy surface (PES) for the SWNT-H system was also developed, and used in a quantum dynamics calculation to compute all rovibrational bound states, and associated equatorial and longitudinal adsorbate migration rates. A highly pronounced preference for the latter migration pathway at ambient temperatures was observed. In this work, we extend the aforementioned study to include multiple H-atom adsorbates. Extensive DFT calculations are performed, in order to ascertain the most relevant dynamical pathways. For two adsorbates, the SWNT-H-H system is found to exhibit highly site-specific binding, as well as long-range correlation and pronounced binding energy enhancement. The latter effect is even more pronounced in the full-hydrogenation limit, increasing the per-adsorbate binding energy to 2.6 eV. To study migration dynamics, a single-hole model is developed, for which the binding energy drops to 2.11 eV. A global 3D PES is developed for the hole migration model, using 40 radial × 18 cylindrical ab initio geometries, fit to a Fourier basis with radially dependent expansion coefficients (rms error 4.9 meV). As compared with the single-adsorbate case, the hole migration PES does not exhibit separate chemisorption and physisorption wells. The barrier to longitudinal migration is also found to be much lower. Quantum dynamics calculations for all rovibrational states are then performed (using a mixed spectral basis/phase-space optimized discrete variable representation), and used to compute longitudinal migration rates. Ramifications for the use of SWNTs as potential hydrogen storage materials are discussed.

  2. Flowing versus Static Conditions for Measuring Multiple Exciton Generation in PbSe Quantum Dots

    SciTech Connect

    Midgett, Aaron G.; Hillhouse, Hugh W.; Hughes, Barbara K.; Nozik, Arthur J.; Beard, Matthew C.

    2010-09-22

    Recent reports question the validity of pulsed fs-laser experiments for measuring the photon-to-exciton quantum yields (QYs) that result from multiple exciton generation (MEG). The repetitive nature of these experiments opens up an alternative relaxation pathway that may produce artificially high results. We present transient-absorption (TA) data for 4.6 and 6.6 nm diameter PbSe quantum dots (QDs) at a variety of pump photon energies. The data are collected under laminar flow conditions with volumetric flow rates ranging from 0 to 150 mL/min (resulting in Reynolds numbers up to 460). The results are modeled with a spatially resolved population balance of generation, recombination, convective replacement, and accumulation of long-lived excited QDs. By comparing the simulations and experiments, the steady-state population of the long-lived QD-excited states and their kinetics are determined for different experimental conditions. We also improve upon reported photon-to-exciton QYs for PbSe QDs. We find differences in the observed TA dynamics between flowing and static conditions that depend upon photon fluence, pump photon energy, and quality of the QD surfaces. For excitation energies below 2 Eg, independent of QD size or photon fluence, we observe no flow rate dependence in the TA dynamics. At excitation energies of hν > 3 Eg, we observe differences between static and flowing conditions that are most pronounced for high photon fluences. At 3.7 Eg and for 4.6 nm PbSe QDs we find a QY of 1.2 ± 0.1 and at 4.5 Eg the QY is 1.55 ± 0.05. With 6.6 nm QDs excited at 4.7 Eg we observe no difference between static and flowing conditions and find a QY of 1.61 ± 0.05. We also find that by treating the surface of QDs, we can decrease the charging probability (Pg ≈ 5 × 10-5) by a factor of 3-4. The observed variations suggest that different QD samples vary regarding their susceptibility to the

  3. Ultrafast carrier capture and Auger recombination in single GaN/InGaN multiple quantum well nanowires

    DOE PAGES

    Boubanga-Tombet, Stephane; Wright, Jeremy B.; Lu, Ping; ...

    2016-11-04

    Ultrafast optical microscopy is an important tool for examining fundamental phenomena in semiconductor nanowires with high temporal and spatial resolution. In this paper, we used this technique to study carrier dynamics in single GaN/InGaN core–shell nonpolar multiple quantum well nanowires. We find that intraband carrier–carrier scattering is the main channel governing carrier capture, while subsequent carrier relaxation is dominated by three-carrier Auger recombination at higher densities and bimolecular recombination at lower densities. Finally, the Auger constants in these nanowires are approximately 2 orders of magnitude lower than in planar InGaN multiple quantum wells, highlighting their potential for future light-emitting devices.

  4. Photoinduced Single- and Multiple- Electron Dynamics Processes Enhanced by Quantum Confinement in Lead Halide Perovskite Quantum Dots.

    PubMed

    Vogel, Dayton Jon; Kryjevski, Andrei; Inerbaev, Talgat M; Kilin, Dmitri S

    2017-03-21

    Methyl-ammonium lead iodide perovskite (MAPbI3) is a promising material for photovoltaic devices. A modification of the MAPbI3 into confined nanostructures is expected to further increase efficiency of solar energy conversion. Photo-excited dynamic processes in a MAPbI3 quantum dot (QD) have been modeled by many-body perturbation theory and nonadiabatic dynamics. A photoexcitation is followed by either exciton cooling (EC), its radiative (RR) or non-radiative recombination (NRR), or multi-exciton generation (MEG) processes. Computed times of these processes fall in the order of MEG < EC < RR < NRR, where MEG is in the order of a few femtoseconds, EC at the picosecond range while RR and NRR are in the order of nanoseconds. Computed timescales indicate which electronic transition pathways can contribute to increase in charge collection efficiency. Simulated mechanism relaxation rates show that quantum confinement promotes MEG in MAPbI3 QDs.

  5. Wavefunction Engineering of Spintronic devices in ZnO/MgO and GaN/AlN Quantum Structures Doped with Transition Metal Ions

    DTIC Science & Technology

    2006-08-01

    modeling terahertz lasers in the wurtzite materials such as ZnO/MgZnO (or even in GaN /AlGaN quantum well structures) when we ’L. R. Ram-Mohan, "Finite...06 4. TITLE AND SUBTITLE 5a. CONTRACT NUMBER Wavefunction Engineering of Spintronic Devices in ZnO/MgO & GaN /AIN Quantum Structures Doped with...wurtzite heterostructures of ZnO/MgZnO and GaN /AlGaN systems grown on R-plane sapphire. The FEM approach gives wavefunctions and allows device modeling

  6. Time domain terahertz spectroscopy of semiconductor bulk and multiple quantum wells structures

    NASA Astrophysics Data System (ADS)

    Chen, Yue

    A time-domain terahertz spectroscopic system with high source power (average power > 10 nW) and high signal-to- noise ratio (>104) was developed and used to study ultrafast electronic processes in semiconductor structures. The physics of the spectroscopy, the theoretical basis of the interferometry, the model of the electron-electromagnetic field interaction, and the principle of experimental data processing are presented. The first direct measurement of the intervalley scattering time in In 0.53Ga0.47As was performed. The intervalley scattering time constants obtained were τLΓ = 35 fs and τLΓ = 450 fs. The spectroscopic data showed that at low carrier density the carrier- carrier scattering is unimportant. The intervalley deformation potential was obtained from the measured intervalley scattering time constant τ LΓ. The transient conductivity was obtained using time-domain terahertz spectroscopy. The frequency dependent terahertz spectroscopy enabled us to uniquely determine the transient mobility and density. The transient electron mobility is ~5200 cm2/Vs, which is less than the Hall mobility. For large photocarrier densities, this discrepancy is attributed to the additional momentum relaxation associated with electron-hole scattering. Using pump pulses with wavelength of 810 run, the electron trapping time in low-temperature-grown GaAs was accurately determined. The measured trapping time is slightly larger than that observed from a band-edge pump- probe measurements. We argue that the terahertz technique provides the most reliable measure of carrier lifetime due to the unique interaction. The carrier dynamics of low-temperature-grown InGaAs bulk and InGaAs/InAlAs multiple quantum wells were investigated. We were able to differentiate the two dominant mechanisms in the electron decay process, trapping and recombination. A trapping time as fast as 1.3-2.6 ps was observed for photo-excited electrons. The effects of Be-doping and growth temperature on the

  7. Optical Control of Intersubband Absorption in a Multiple Quantum Well-Embedded Semiconductor Microcravity

    NASA Technical Reports Server (NTRS)

    Liu, Ansheng; Ning, Cun-Zheng

    2000-01-01

    Optical intersubband response of a multiple quantum well (MQW)-embedded microcavity driven by a coherent pump field is studied theoretically. The n-type doped MQW structure with three subbands in the conduction band is sandwiched between a semi-infinite medium and a distributed Bragg reflector (DBR). A strong pump field couples the two upper subbands and a weak field probes the two lower subbands. To describe the optical response of the MQW-embedded microcavity, we adopt a semi-classical nonlocal response theory. Taking into account the pump-probe interaction, we derive the probe-induced current density associated with intersubband transitions from the single-particle density-matrix formalism. By incorporating the current density into the Maxwell equation, we solve the probe local field exactly by means of Green's function technique and the transfer-matrix method. We obtain an exact expression for the probe absorption coefficient of the microcavity. For a GaAs/Al(sub x)Ga(sub 1-x)As MQW structure sandwiched between a GaAs/AlAs DBR and vacuum, we performed numerical calculations of the probe absorption spectra for different parameters such as pump intensity, pump detuning, and cavity length. We find that the probe spectrum is strongly dependent on these parameters. In particular, we find that the combination of the cavity effect and the Autler-Townes effect results in a triplet in the optical spectrum of the MQW system. The optical absorption peak value and its location can be feasibly controlled by varying the pump intensity and detuning.

  8. Continuous-variable quantum teleportation with non-Gaussian entangled states generated via multiple-photon subtraction and addition

    NASA Astrophysics Data System (ADS)

    Wang, Shuai; Hou, Li-Li; Chen, Xian-Feng; Xu, Xue-Fen

    2015-06-01

    We theoretically analyze the Einstein-Podolsky-Rosen (EPR) correlation, the quadrature squeezing, and the continuous-variable quantum teleportation when considering non-Gaussian entangled states generated by applying multiple-photon subtraction and multiple-photon addition to a two-mode squeezed vacuum state (TMSVs). Our results indicate that in the case of the multiple-photon-subtracted TMSVs with symmetric operations, the corresponding EPR correlation, the two-mode squeezing degree, the sum squeezing, and the fidelity of teleporting a coherent state or a squeezed vacuum state can be enhanced for any squeezing parameter r and these enhancements increase with the number of subtracted photons in the low-squeezing regime, while asymmetric multiple-photon subtractions will generally reduce these quantities. For the multiple-photon-added TMSVs, although it holds stronger entanglement, its EPR correlation, two-mode squeezing, sum squeezing, and the fidelity of a coherent state are always smaller than that of the TMSVs. Only when considering the case of teleporting a squeezed vacuum state does the symmetric photon addition make somewhat of an improvement in the fidelity for large-squeezing parameters. In addition, we analytically prove that a one-mode multiple-photon-subtracted TMSVs is equivalent to that of the one-mode multiple-photon-added one. And one-mode multiple-photon operations will diminish the above four quantities for any squeezing parameter r .

  9. Multiple-path Quantum Interference Effects in a Double-Aharonov-Bohm Interferometer.

    PubMed

    Yang, Xf; Liu, Ys

    2010-05-22

    We investigate quantum interference effects in a double-Aharonov-Bohm (AB) interferometer consisting of five quantum dots sandwiched between two metallic electrodes in the case of symmetric dot-electrode couplings by the use of the Green's function equation of motion method. The analytical expression for the linear conductance at zero temperature is derived to interpret numerical results. A three-peak structure in the linear conductance spectrum may evolve into a double-peak structure, and two Fano dips (zero conductance points) may appear in the quantum system when the energy levels of quantum dots in arms are not aligned with one another. The AB oscillation for the magnetic flux threading the double-AB interferometer is also investigated in this paper. Our results show the period of AB oscillation can be converted from 2π to π by controlling the difference of the magnetic fluxes threading the two quantum rings.

  10. Correlation between the structural and cathodoluminescence properties in InGaN/GaN multiple quantum wells with large number of quantum wells

    SciTech Connect

    Yang, Jing; Zhao, Degang Jiang, Desheng; Chen, Ping; Zhu, Jianjun; Liu, Zongshun; Le, Lingcong; He, Xiaoguang; Li, Xiaojing; Wang, Hui; Yang, Hui; Jahn, Uwe

    2014-09-01

    Cathodoluminescence (CL) characteristics on 30-period InGaN/GaN multiple quantum well (MQW) solar cell structures are investigated, revealing the relationship between optical and structural properties of the MQW structures with a large number of quantum wells. In the bottom MQW layers, a blueshift of CL peak along the growth direction is found and attributed to the decrease of indium content due to the compositional pulling effect. An obvious split of emission peak and a redshift of the main emission energy are found in the top MQW layers when the MQW grows above the critical layer thickness. They are attributed to the segregation of In-rich InGaN clusters rather than the increase of indium content in quantum well layer. The MQW structure is identified to consist of two regions: a strained one in the bottom, where the indium content is gradually decreased, and a partly relaxed one in the top with segregated In-rich InGaN clusters.

  11. Multiple quantum filtered (23)Na NMR in the Langendorff perfused mouse heart: Ratio of triple/double quantum filtered signals correlates with [Na]i.

    PubMed

    Eykyn, Thomas R; Aksentijević, Dunja; Aughton, Karen L; Southworth, Richard; Fuller, William; Shattock, Michael J

    2015-09-01

    We investigate the potential of multiple quantum filtered (MQF) (23)Na NMR to probe intracellular [Na]i in the Langendorff perfused mouse heart. In the presence of Tm(DOTP) shift reagent the triple quantum filtered (TQF) signal originated largely from the intracellular sodium pool with a 32±6% contribution of the total TQF signal arising from extracellular sodium, whilst the rank 2 double-quantum filtered signal (DQF), acquired with a 54.7° flip-angle pulse, originated exclusively from the extracellular sodium pool. Given the different cellular origins of the (23)Na MQF signals we propose that the TQF/DQF ratio can be used as a semi-quantitative measure of [Na]i in the mouse heart. We demonstrate a good correlation of this ratio with [Na]i measured with shift reagent at baseline and under conditions of elevated [Na]i. We compare the measurements of [Na]i using both shift reagent and TQF/DQF ratio in a cohort of wild type mouse hearts and in a transgenic PLM(3SA) mouse expressing a non-phosphorylatable form of phospholemman, showing a modest but measurable elevation of baseline [Na]i. MQF filtered (23)Na NMR is a potentially useful tool for studying normal and pathophysiological changes in [Na]i, particularly in transgenic mouse models with altered Na regulation.

  12. Multiple quantum filtered 23Na NMR in the Langendorff perfused mouse heart: Ratio of triple/double quantum filtered signals correlates with [Na]i

    PubMed Central

    Eykyn, Thomas R.; Aksentijević, Dunja; Aughton, Karen L.; Southworth, Richard; Fuller, William; Shattock, Michael J.

    2015-01-01

    We investigate the potential of multiple quantum filtered (MQF) 23Na NMR to probe intracellular [Na]i in the Langendorff perfused mouse heart. In the presence of Tm(DOTP) shift reagent the triple quantum filtered (TQF) signal originated largely from the intracellular sodium pool with a 32 ± 6% contribution of the total TQF signal arising from extracellular sodium, whilst the rank 2 double-quantum filtered signal (DQF), acquired with a 54.7° flip-angle pulse, originated exclusively from the extracellular sodium pool. Given the different cellular origins of the 23Na MQF signals we propose that the TQF/DQF ratio can be used as a semi-quantitative measure of [Na]i in the mouse heart. We demonstrate a good correlation of this ratio with [Na]i measured with shift reagent at baseline and under conditions of elevated [Na]i. We compare the measurements of [Na]i using both shift reagent and TQF/DQF ratio in a cohort of wild type mouse hearts and in a transgenic PLM3SA mouse expressing a non-phosphorylatable form of phospholemman, showing a modest but measurable elevation of baseline [Na]i. MQF filtered 23Na NMR is a potentially useful tool for studying normal and pathophysiological changes in [Na]i, particularly in transgenic mouse models with altered Na regulation. PMID:26196304

  13. High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells

    SciTech Connect

    Chang, Chiao-Yun; Li, Hen; Lu, Tien-Chang

    2014-03-03

    In this study, we demonstrated high efficiency InGaN/GaN light emitting diodes (LEDs) with asymmetric triangular multiple quantum wells (MQWs). Asymmetric triangular MQWs not only contribute to uniform carrier distribution in InGaN/GaN MQWs but also yield a low Auger recombination rate. In addition, asymmetric triangular MQWs with gallium face-oriented inclination band profiles can be immune from the polarization charge originating from typical c-plane InGaN/GaN quantum well structures. In the experiment, LEDs incorporated with asymmetric triangular MQWs with gallium face-oriented inclination band profiles exhibited a 60.0% external quantum efficiency at 20 mA and a 27.0% efficiency droop at 100 mA (corresponding to a current density of 69 A/cm{sup 2}), which accounted for an 11.7% efficiency improvement and a 31.1% droop reduction compared with symmetric square quantum well structure LEDs.

  14. 19F single-quantum and 19F-33S heteronuclear multiple-quantum coherence NMR of SF6 in thermotropic nematogens and in the gas phase.

    PubMed

    Tervonen, Henri; Saunavaara, Jani; Ingman, L Petri; Jokisaari, Jukka

    2006-08-24

    (19)F single-quantum (SQC) and (19)F-(33)S heteronuclear multiple-quantum coherence (HMQC) NMR spectroscopy of sulfur hexafluoride (SF(6)) dissolved in thermotropic liquid crystals (TLCs) were used to investigate the properties of TLCs. On one hand, environmental effects on the NMR parameters of SF(6), (19)F nuclear shielding, (19)F-(33)S spin-spin coupling, secondary isotope effects of sulfur on (19)F shielding, and the self-diffusion coefficient in the direction of the external magnetic field were studied as well. The temperature dependence of the (19)F shielding of SF(6) in TLCs was modeled with a function that takes into account the properties of both TLC and SF(6). It appears that the TLC environment deforms the electronic system of SF(6) so that the (19)F shielding tensor becomes slightly anisotropic, with the anisotropy being from -0.5 to -1.4 ppm, depending upon the TLC solvent. On the contrary, no sign of residual dipolar coupling between (19)F and (33)S was found, meaning that the so-called deformational effects, which arise from the interaction between vibrational and reorientational motions of the molecule, on the geometry of the molecule are insignificant. Diffusion activation energies, E(a), were determined from the temperature dependence of the self-diffusion coefficients. In each TLC, E(a) increases when moving from an isotropic phase to a nematic phase. The spin-spin coupling constant, J((19)F,(33)S), increases by ca. 10 Hz when moving from the gas phase to TLC solutions. The secondary isotope shifts of (19)F shielding are practically independent of TLC solvent and temperature. For the first time, (19)F-(33)S heteronuclear multiple-quantum NMR spectra were recorded for SF(6) in the gas phase and in a liquid-crystalline solution.

  15. Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates

    SciTech Connect

    Crawford, Mary H.; Allerman, Andrew A.; Armstrong, Andrew M.; Smith, Michael L.; Cross, Karen C.

    2015-10-30

    We fabricated optically pumped and electrically injected ultraviolet (UV) lasers on reduced-threading-dislocation-density (reduced-TDD) AlGaN templates. The overgrowth of sub-micron-wide mesas in the Al0.32Ga0.68N templates enabled a tenfold reduction in TDD, to (2–3) × 108 cm–2. Optical pumping of AlGaN hetero-structures grown on the reduced-TDD templates yielded a low lasing threshold of 34 kW/cm2 at 346 nm. Room-temperature pulsed operation of laser diodes at 353 nm was demonstrated, with a threshold of 22.5 kA/cm2. Furthermore, reduced-TDD templates have been developed across the entire range of AlGaN compositions, presenting a promising approach for extending laser diodes into the deep UV.

  16. Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates

    DOE PAGES

    Crawford, Mary H.; Allerman, Andrew A.; Armstrong, Andrew M.; ...

    2015-10-30

    We fabricated optically pumped and electrically injected ultraviolet (UV) lasers on reduced-threading-dislocation-density (reduced-TDD) AlGaN templates. The overgrowth of sub-micron-wide mesas in the Al0.32Ga0.68N templates enabled a tenfold reduction in TDD, to (2–3) × 108 cm–2. Optical pumping of AlGaN hetero-structures grown on the reduced-TDD templates yielded a low lasing threshold of 34 kW/cm2 at 346 nm. Room-temperature pulsed operation of laser diodes at 353 nm was demonstrated, with a threshold of 22.5 kA/cm2. Furthermore, reduced-TDD templates have been developed across the entire range of AlGaN compositions, presenting a promising approach for extending laser diodes into the deep UV.

  17. Simultaneous SU(2) rotations on multiple quantum dot exciton qubits using a single shaped pulse

    NASA Astrophysics Data System (ADS)

    Mathew, Reuble; Yang, Hong Yi Shi; Hall, Kimberley C.

    2015-10-01

    Recent experimental demonstration of a parallel (π ,2 π ) single qubit rotation on excitons in two distant quantum dots [Nano Lett. 13, 4666 (2013), 10.1021/nl4018176] is extended in numerical simulations to the design of pulses for more general quantum state control, demonstrating the feasibility of full SU(2) rotations of each exciton qubit. Our results show that simultaneous high-fidelity quantum control is achievable within the experimentally accessible parameter space for commercial Fourier-domain pulse shaping systems. The identification of a threshold of distinguishability for the two quantum dots (QDs) for achieving high-fidelity parallel rotations, corresponding to a difference in transition energies of ˜0.25 meV , points to the possibility of controlling more than 10 QDs with a single shaped optical pulse.

  18. Optimizing the multiple quantum well thickness of an InGaN blue light emitting diode

    NASA Astrophysics Data System (ADS)

    Xu, Bing; Zhao, Jun Liang; Wang, Shu Guo; Dai, Hai Tao; Yu, Sheng-Fu; Lin, Ray-Ming; Chu, Fu-Chuan; Huang, Chou-Hsiung; Sun, Xiao Wei

    2013-03-01

    InGaN/GaN blue light emitting diodes with varied quantum well thickness from 2.4 nm to 3.6 nm are fabricated and characterized by atmosphere pressure metalorganic chemical vapor deposition (AP-MOCVD). Experimental results show that the exciton localization effect is enhanced from 21.76 to 23.48 by increasing the quantum well thickness from 2.4 nm to 2.7 nm. However, with the further increase of quantum well thickness, the exciton localization effect becomes weaker. Meanwhile, the peak wavelength of electroluminescence redshift with the increase of well thickness due to the larger quantum confined Stark effect (QCSE). In addition, the efficiency droop can be improved by increasing the well thickness.

  19. Optically controlled reflection modulator using GaAs-AlGaAs n-i-p-i/multiple-quantum-well structures

    NASA Technical Reports Server (NTRS)

    Law, K.-K.; Simes, R. J.; Coldren, L. A.; Gossard, A. C.; Maserjian, J.

    1989-01-01

    An optically controlled reflection modulator has been demonstrated that consists of a combination of a GaAs-AlGaAs n-i-p-i doping structure with a multiple-quantum-well structures on top of a distributed Bragg reflector, all grown by MBE. A modulation of approximately 60 percent is obtained on the test structure, corresponding to a differential change of absorption coefficient in the quantum wells of approximately 7500/cm. Changes in reflectance can be observed with a control beam power as low as 1.5 microW. This device structure has the potential of being developed as an optically addressed spatial light modulator for optical information processing.

  20. Picosecond excitonic absorption recovery of 100 nm GaAs/AlGaAs narrow multiple quantum-well wires

    NASA Astrophysics Data System (ADS)

    Tackeuchi, Atsushi; Kitada, Hideki; Arimoto, Hiroshi; Sugiyama, Yoshihiro; Endoh, Akira; Nakata, Yoshiaki; Inata, Tsuguo; Muto, Shunichi

    1991-08-01

    We report the time-resolved absorption measurement of narrow multiple quantum-well (MQW) wires to investigate their fast recoveries from excitonic absorption bleaching. Wires down to 130 nm were fabricated from MQWs using focused ion beam lithography and electron cyclotron-resonance chlorine-plasma etching. In this structure, the photoexcited carriers diffuse toward the sidewalls and recombine on the surface of the sidewalls. We show that the strong optical nonlinearity of excitons is preserved, even in wires of 130 nm width, and having a fast recovery time in the picosecond region. We also briefly discuss the possibility of making quantum wires which have a faster recovery time and larger optical nonlinearity.

  1. Multiple Exciton Generation Solar Cells Using CdSe Quantum Dots

    NASA Astrophysics Data System (ADS)

    Gebreselassie, Haftom Mesfin; Sharma, R. B.; Chander, Nikhil

    2011-10-01

    Experimental and Simulation works of Nanostructured Solar Cells Using CdSe Quantum Dots have been analyzed and investigated. CdSe quantum dots have been synthesized from non coordinating and high boiling solvent Octadecene and a series of increasing CdSe particle sizes are produced. The synthesized CdSe quantum dots are highly examined under a Transmission Electron Microscope and four images of different sizes of CdSe quantum dots (5.8 nm, 6.4 nm, 7.0 nm and 7.7 nm) have been obtained. A 1.1×1.1 cm2 TiO2 electrode is prepared using indium tin oxide conducting glass and TiO2 nanoparticles. The Oleic acid terminated CdSe quantum dots are separated from the octadecene by using 100% ethanol and centrifuge machine of spin about 4000 rpm until the shaking gave no longer suspension. The CdSe quantum dot (5.8 nm) was adsorbed on TiO2 photoelectrode and used as sensitizer. The relationship of Bandgap energy, Emission wavelength with respect to quantum dot size have been simulated and investigated. In this paper work, a sandwich type cell configuration which is made up of TiO2 photoelectrode, graphite coated counter electrode, an electrolyte of iodine and potassium iodide have been used. This sandwich type cell has been exposed to sun light and we have achieved 0.32 V and 0.2 mA cm-2 of potential difference and current respectively.

  2. Lasing and Longitudinal Cavity Modes in Photo-Pumped Deep Ultraviolet AlGaN Heterostructures

    DTIC Science & Technology

    2013-04-29

    found else- where.19 Laser cavities were obtained by cleaving along the m-facet of the AlN wafer . For the 1.5 mm long cavity, the cleaving was done with... lasers . The authors would like to thank Paul Rozvadovsky of HexaTech for wafer thinning, which made cleaving of short cavities possible. 1S. Nakamura...NC 27709-2211 15. SUBJECT TERMS AlGaN lasers , optical pumping, longitudinal cavity modes Jinqiao Xie, Seiji Mita, Zachary Bryan, Wei Guo, Lindsay

  3. Photogalvanic effects for interband absorption in AlGaN /GaN superlattices

    NASA Astrophysics Data System (ADS)

    Cho, K. S.; Chen, Y. F.; Tang, Y. Q.; Shen, B.

    2007-01-01

    The linear and circular photogalvanic effects (CPGEs), induced by ultraviolet (325nm) radiation, have been observed in the (0001)-oriented Al0.15Ga0.85N/GaN superlattices. The CPGE current changes sign upon reversing the radiation helicity, and it is up to two orders of magnitude larger than that obtained by far-infrared radiation. This result suggests the existence of a sizeable Rashba spin splitting in AlGaN /GaN superlattices. It also provides a possibility for the generation of spin orientation-induced current at room temperature.

  4. Quantum Darwinism

    SciTech Connect

    Zurek, Wojciech H

    2008-01-01

    Quantum Darwinism - proliferation, in the environment, of multiple records of selected states of the system (its information-theoretic progeny) - explains how quantum fragility of individual state can lead to classical robustness of their multitude.

  5. Time-dependent multiple scattering approach for a single finger-gate in a Rashba-type quantum channel .

    NASA Astrophysics Data System (ADS)

    Wang, Lu-Yao

    2006-03-01

    We consider a Rashba-type quantum channel (RQC) consisting of one AC-biased finger-gates (FG) that orient perpendicularly and located above the RQC. Such an AC-biased FG gives rise to a local time-modulation in the Rashba coupling parameter, and generates a dc spin current (SC). A static potential is located inside or outside the FG in the RQC and the backscattering effect is studied. We use analytical time-dependent multiple scattering approach to treat the effect of the SC suppression due to a static potential in the RQC.

  6. Quantum-noise quenching in the correlated spontaneous-emission laser as a multiplicative noise process. I. A geometrical argument

    SciTech Connect

    Schleich, W.; Scully, M.O.

    1988-02-15

    We show, via simple geometrical arguments, the quantum-noise quenching in a correlated (spontaneous) emission laser (CEL). This noise quenching is a consequence of the correlation between noise sources which results in a multiplicative noise process. The steady-state distribution for the phase difference between the two electric fields in a CEL is compared and contrasted to that of a standard phase-locked laser. Noise quenching is shown to occur in the case of the CEL via an explicit solution of the Fokker-Planck equation.

  7. Hydrogen cluster/network in tobermorite as studied by multiple-quantum spin counting {sup 1}H NMR

    SciTech Connect

    Mogami, Yuuki; Yamazaki, Satoru; Matsuno, Shinya; Matsui, Kunio; Noda, Yasuto; Takegoshi, K.

    2014-12-15

    Proton multiple-quantum (MQ) spin-counting experiment has been employed to study arrangement of hydrogen atoms in 9 Å/11 Å natural/synthetic tobermorites. Even though all tobermorite samples give similar characterless, broad static-powder {sup 1}H NMR spectra, their MQ spin-counting spectra are markedly different; higher quanta in 11 Å tobermorite do not grow with the MQ excitation time, while those in 9 Å one do. A statistical analysis of the MQ results recently proposed [26] is applied to show that hydrogens align in 9 Å tobermorite one dimensionally, while in 11 Å tobermorite they exist as a cluster of 5–8 hydrogen atoms.

  8. Photogalvanic effects for interband transition in p-Si0.5Ge0.5/Si multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Wei, C. M.; Cho, K. S.; Chen, Y. F.; Peng, Y. H.; Chiu, C. W.; Kuan, C. H.

    2007-12-01

    Circular photogalvanic effect (CPGE) and linear photogalvanic effect for interband transition have been observed simultaneously in Si0.5Ge0.5/Si multiple quantum wells. The signature of the CPGE is evidenced by the change of its sign upon reversing the radiation helicity. It is found that the observed CPGE photocurrent is an order of magnitude greater than that obtained for intersubband transition. The dependences of the CPGE on the angle of incidence and the excitation intensities can be well interpreted based on its characteristics. The large signal of spin generation observed here at room temperature should be very useful for the realization of practical application of spintronics.

  9. An optically detectable CO2 sensor utilizing polyethylenimine and starch functionalized InGaN/GaN multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Chen, Y. C.; Shih, H. Y.; Chen, J. Y.; Tan, W. J.; Chen, Y. F.

    2013-07-01

    An optically detectable gas sensor based on the high surface sensitivity of functionalized polyethylenimine/starch In0.15Ga0.85N/GaN strained semiconductor multiple quantum wells (MQWs) has been developed. Due to the excellent piezoelectricity of the MQWs, the change of surface charges caused by chemical interaction can introduce a strain and induce an internal field. In turn, it tilts the energy levels of the MQWs and modifies the optical properties. Through the measurement of the changes in photoluminescence as well as Raman scattering spectra under different concentrations of carbon dioxide gas, we demonstrate the feasibility and high sensitivity of the sensors derived from our methodology.

  10. Strong electronic interaction and multiple quantum Hall ferromagnetic phases in trilayer graphene

    NASA Astrophysics Data System (ADS)

    Datta, Biswajit; Dey, Santanu; Samanta, Abhisek; Agarwal, Hitesh; Borah, Abhinandan; Watanabe, Kenji; Taniguchi, Takashi; Sensarma, Rajdeep; Deshmukh, Mandar M.

    2017-02-01

    Quantum Hall effect provides a simple way to study the competition between single particle physics and electronic interaction. However, electronic interaction becomes important only in very clean graphene samples and so far the trilayer graphene experiments are understood within non-interacting electron picture. Here, we report evidence of strong electronic interactions and quantum Hall ferromagnetism seen in Bernal-stacked trilayer graphene. Due to high mobility ~500,000 cm2 V-1 s-1 in our device compared to previous studies, we find all symmetry broken states and that Landau-level gaps are enhanced by interactions; an aspect explained by our self-consistent Hartree-Fock calculations. Moreover, we observe hysteresis as a function of filling factor and spikes in the longitudinal resistance which, together, signal the formation of quantum Hall ferromagnetic states at low magnetic field.

  11. Strong electronic interaction and multiple quantum Hall ferromagnetic phases in trilayer graphene.

    PubMed

    Datta, Biswajit; Dey, Santanu; Samanta, Abhisek; Agarwal, Hitesh; Borah, Abhinandan; Watanabe, Kenji; Taniguchi, Takashi; Sensarma, Rajdeep; Deshmukh, Mandar M

    2017-02-20

    Quantum Hall effect provides a simple way to study the competition between single particle physics and electronic interaction. However, electronic interaction becomes important only in very clean graphene samples and so far the trilayer graphene experiments are understood within non-interacting electron picture. Here, we report evidence of strong electronic interactions and quantum Hall ferromagnetism seen in Bernal-stacked trilayer graphene. Due to high mobility ∼500,000 cm(2 )V(-1 )s(-1) in our device compared to previous studies, we find all symmetry broken states and that Landau-level gaps are enhanced by interactions; an aspect explained by our self-consistent Hartree-Fock calculations. Moreover, we observe hysteresis as a function of filling factor and spikes in the longitudinal resistance which, together, signal the formation of quantum Hall ferromagnetic states at low magnetic field.

  12. Strong electronic interaction and multiple quantum Hall ferromagnetic phases in trilayer graphene

    PubMed Central

    Datta, Biswajit; Dey, Santanu; Samanta, Abhisek; Agarwal, Hitesh; Borah, Abhinandan; Watanabe, Kenji; Taniguchi, Takashi; Sensarma, Rajdeep; Deshmukh, Mandar M.

    2017-01-01

    Quantum Hall effect provides a simple way to study the competition between single particle physics and electronic interaction. However, electronic interaction becomes important only in very clean graphene samples and so far the trilayer graphene experiments are understood within non-interacting electron picture. Here, we report evidence of strong electronic interactions and quantum Hall ferromagnetism seen in Bernal-stacked trilayer graphene. Due to high mobility ∼500,000 cm2 V−1 s−1 in our device compared to previous studies, we find all symmetry broken states and that Landau-level gaps are enhanced by interactions; an aspect explained by our self-consistent Hartree–Fock calculations. Moreover, we observe hysteresis as a function of filling factor and spikes in the longitudinal resistance which, together, signal the formation of quantum Hall ferromagnetic states at low magnetic field. PMID:28216666

  13. Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions

    SciTech Connect

    Hammersley, S.; Dawson, P.; Kappers, M. J.; Massabuau, F. C.-P.; Sahonta, S.-L.; Oliver, R. A.; Humphreys, C. J.

    2015-09-28

    InGaN-based light emitting diodes and multiple quantum wells designed to emit in the green spectral region exhibit, in general, lower internal quantum efficiencies than their blue-emitting counter parts, a phenomenon referred to as the “green gap.” One of the main differences between green-emitting and blue-emitting samples is that the quantum well growth temperature is lower for structures designed to emit at longer wavelengths, in order to reduce the effects of In desorption. In this paper, we report on the impact of the quantum well growth temperature on the optical properties of InGaN/GaN multiple quantum wells designed to emit at 460 nm and 530 nm. It was found that for both sets of samples increasing the temperature at which the InGaN quantum well was grown, while maintaining the same indium composition, led to an increase in the internal quantum efficiency measured at 300 K. These increases in internal quantum efficiency are shown to be due reductions in the non-radiative recombination rate which we attribute to reductions in point defect incorporation.

  14. A core-multiple shell nanostructure enabling concurrent upconversion and quantum cutting for photon management.

    PubMed

    Shao, Wei; Chen, Guanying; Ohulchanskyy, Tymish Y; Yang, Chunhui; Ågren, Hans; Prasad, Paras N

    2017-02-02

    Photon management enables the manipulation of the number of input photons by conversion of two or more light quanta into one (upconversion) or vice versa (quantum cutting). Simultaneous realization of both these processes in a single unit provides unique opportunities of efficient utilization of photons throughout a broad spectral range. Yet, concurrent realization of these two parallel optical processes in one single unit remains elusive, limiting its impact on many existing or possible future applications such as for panchromatic photovoltaics. Here, we describe an epitaxial active core/inert shell/active shell/inert shell fluoride nanostructure to implement upconversion and quantum cutting within spatially confined and isolated rare-earth-doped active domains. The core area transforms infrared photons through trivalent erbium (Er(3+)) ions into three- and two-photon upconverted visible and near infrared luminescence, while the second shell domain splits an excitation photon into two near infrared photons through cooperative quantum cutting from one trivalent terbium ion (Tb(3+)) to two trivalent ytterbium ions (Yb(3+)). The inert layer in between the active domains is able to effectively suppress the destructive interference between upconversion and quantum cutting, while the outermost inert shell is able to eliminate surface-related quenching. This design enables the colloidal core/multishell nanoparticles to have an upconversion quantum yield of ∼1.6%, and to have a luminescence yield of the quantum cutting process as high as ∼130%. This work constitutes a solid step for flexible photon management in a single nanostructure, and has an implication for photonic applications beyond photovoltaics.

  15. Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and “Negative” Thermal Activation Energy

    PubMed Central

    Bao, Wei; Su, Zhicheng; Zheng, Changcheng; Ning, Jiqiang; Xu, Shijie

    2016-01-01

    Two-dimensional InGaN/GaN multiple-quantum-wells (MQW) LED structure was nanotextured into quasi-one-dimensional nanowires (NWs) with different average diameters with a combination approach of Ni nanoislands as mask + dry etching. Such nanotexturing bring out several appealing effects including deeper localization of carriers and significant improvement in quantum efficiency (e.g., from 4.76% of the planar MQW structure to 12.5% of the 160 nm MQW NWs) of light emission in the whole interested temperature range from 4 K to 300 K. With the aid of localized-state ensemble (LSE) luminescence model, the photoluminescence spectra of the samples are quantitatively interpreted in the entire temperature range. In terms of distinctive temperature dependence of photoluminescence from these samples, a concept of “negative” thermal activation energy is tentatively proposed for the MQW NWs samples. These findings could lead to a deeper insight into the physical nature of localization and luminescence mechanism of excitons in InGaN/GaN nanowires. PMID:27686154

  16. Effect of well layer thickness on quantum and energy conversion efficiencies for InGaN/GaN multiple quantum well solar cells

    NASA Astrophysics Data System (ADS)

    Miyoshi, Makoto; Tsutsumi, Tatsuya; Kabata, Tomoki; Mori, Takuma; Egawa, Takashi

    2017-03-01

    We investigated the effect of well layer thicknesses on the external quantum efficiency (EQE) and energy conversion efficiency (ECE) for InGaN/GaN multiple quantum well (MQW) solar cells grown on sapphire substrates by metalorganic chemical vapor deposition. The results indicated that EQE and ECE have maximum values at a specific well thickness. When the well thickness is sufficiently thin, EQE and ECE increase with an increase in the well thickness owing to an increase in light absorption. Then, once the well thickness surpasses a critical thickness, EQE and ECE begin to decrease owing to the influence of nonradiative recombination processes, which was indicated by the static and dynamic photoluminescence analyses. The critical well thickness probably depends not only on the MQW design but also on growth conditions. Further, we confirmed that the increased total thickness of the stacked well layers leads to increased light absorption and thereby contributes to the improvement of solar cell performance. A high short circuit current density of 1.34 mA/cm2 and a high ECE of 1.31% were achieved for a InGaN/GaN MQW solar cell with a 3.2-nm-thick InGaN well with total well thickness of 115 nm.

  17. Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and "Negative" Thermal Activation Energy.

    PubMed

    Bao, Wei; Su, Zhicheng; Zheng, Changcheng; Ning, Jiqiang; Xu, Shijie

    2016-09-30

    Two-dimensional InGaN/GaN multiple-quantum-wells (MQW) LED structure was nanotextured into quasi-one-dimensional nanowires (NWs) with different average diameters with a combination approach of Ni nanoislands as mask + dry etching. Such nanotexturing bring out several appealing effects including deeper localization of carriers and significant improvement in quantum efficiency (e.g., from 4.76% of the planar MQW structure to 12.5% of the 160 nm MQW NWs) of light emission in the whole interested temperature range from 4 K to 300 K. With the aid of localized-state ensemble (LSE) luminescence model, the photoluminescence spectra of the samples are quantitatively interpreted in the entire temperature range. In terms of distinctive temperature dependence of photoluminescence from these samples, a concept of "negative" thermal activation energy is tentatively proposed for the MQW NWs samples. These findings could lead to a deeper insight into the physical nature of localization and luminescence mechanism of excitons in InGaN/GaN nanowires.

  18. Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and “Negative” Thermal Activation Energy

    NASA Astrophysics Data System (ADS)

    Bao, Wei; Su, Zhicheng; Zheng, Changcheng; Ning, Jiqiang; Xu, Shijie

    2016-09-01

    Two-dimensional InGaN/GaN multiple-quantum-wells (MQW) LED structure was nanotextured into quasi-one-dimensional nanowires (NWs) with different average diameters with a combination approach of Ni nanoislands as mask + dry etching. Such nanotexturing bring out several appealing effects including deeper localization of carriers and significant improvement in quantum efficiency (e.g., from 4.76% of the planar MQW structure to 12.5% of the 160 nm MQW NWs) of light emission in the whole interested temperature range from 4 K to 300 K. With the aid of localized-state ensemble (LSE) luminescence model, the photoluminescence spectra of the samples are quantitatively interpreted in the entire temperature range. In terms of distinctive temperature dependence of photoluminescence from these samples, a concept of “negative” thermal activation energy is tentatively proposed for the MQW NWs samples. These findings could lead to a deeper insight into the physical nature of localization and luminescence mechanism of excitons in InGaN/GaN nanowires.

  19. Multiple Andreev reflections in s -wave superconductor-quantum dot-topological superconductor tunnel junctions and Majorana bound states

    NASA Astrophysics Data System (ADS)

    Golub, Anatoly

    2015-05-01

    We calculate the current as a function of applied voltage in a nontopological s -wave superconductor-quantum dot-topological superconductor (TS) tunnel junction. We consider the type of TS which hosts two Majorana bound states (MBSs) at the ends of a semiconductor quantum wire or of a chain of magnetic atoms in the proximity with an s -wave superconductor. We find that the I -V characteristic of such a system in the regime of big voltages has a typical two-dot shape and is ornamented by peaks of multiple Andreev reflections. We also consider the other options when the zero-energy states are created by disorder (hereby Shiba states) or by Andreev zero-energy bound states at the surface of a quantum dot and a superconductor. The later are obtained by tuning the magnetic field to a specific value. Unlike the last two cases the MBS I -V curves are robust to change the magnetic field. Therefore, the magnetic-field dependence of the tunneling current can serve as a unique signature for the presence of a MBS.

  20. Molecularly Engineered Organic-Inorganic Hybrid Perovskite with Multiple Quantum Well Structure for Multicolored Light-Emitting Diodes

    PubMed Central

    Hu, Hongwei; Salim, Teddy; Chen, Bingbing; Lam, Yeng Ming

    2016-01-01

    Organic-inorganic hybrid perovskites have the potential to be used as a new class of emitters with tunable emission, high color purity and good ease of fabrication. Recent studies have so far been focused on three-dimensional (3D) perovskites, such as CH3NH3PbBr3 and CH3NH3PbI3 for green and infrared emission. Here, we explore a new series of hybrid perovskite emitters with a general formula of (C4H9NH3)2(CH3NH3)n−1PbnI3n+1 (where n = 1, 2, 3), which possesses a multiple quantum well structure. The quantum well thickness of these materials is adjustable through simple molecular engineering which results in a continuously tunable bandgap and emission spectra. Deep saturated red emission was obtained with a peak external quantum efficiency of 2.29% and a maximum luminance of 214 cd/m2. Green and blue LEDs were also demonstrated through halogen substitutions in these hybrid perovskites. We expect these results to open up the way towards high performance perovskite LEDs through molecular-structure engineering of these perovskite emitters. PMID:27633084

  1. From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: Role of the AlGaN layer microstructure

    SciTech Connect

    Fisichella, G.; Greco, G.; Roccaforte, F.; Giannazzo, F.

    2014-08-11

    The electrical behaviour of graphene (Gr) contacts to Al{sub x}Ga{sub 1−x}N/GaN heterostructures has been investigated, focusing, in particular, on the impact of the AlGaN microstructure on the current transport at Gr/AlGaN interface. Two Al{sub 0.25}Ga{sub 0.75}N/GaN heterostructures with very different quality in terms of surface roughness and defectivity, as evaluated by atomic force microscopy (AFM) and transmission electron microscopy, were compared in this study, i.e., a uniform and defect-free sample and a sample with a high density of typical V-defects, which locally cause a reduction of the AlGaN thickness. Nanoscale resolution current voltage (I-V) measurements by an Au coated conductive AFM tip were carried out at several positions both on the bare and Gr-coated AlGaN surfaces. Rectifying contacts were found onto both bare AlGaN surfaces, but with a more inhomogeneous and lower Schottky barrier height (Φ{sub B} ≈ 0.6 eV) for AlGaN with V-defects, with respect to the case of the uniform AlGaN (Φ{sub B} ≈ 0.9 eV). Instead, very different electrical behaviours were observed in the presence of the Gr interlayer between the Au tip and AlGaN, i.e., a Schottky contact with reduced barrier height (Φ{sub B} ≈ 0.4 eV) for the uniform AlGaN and an Ohmic contact for the AlGaN with V-defects. Interestingly, excellent lateral uniformity of the local I-V characteristics was found in both cases and can be ascribed to an averaging effect of the Gr electrode over the AlGaN interfacial inhomogeneities. Due to the locally reduced AlGaN layer thickness, V defect act as preferential current paths from Gr to the 2DEG and can account for the peculiar Ohmic behaviour of Gr contacts on defective AlGaN.

  2. Impact of biexcitons on the relaxation mechanisms of polaritons in III-nitride based multiple quantum well microcavities

    NASA Astrophysics Data System (ADS)

    Corfdir, P.; Levrat, J.; Rossbach, G.; Butté, R.; Feltin, E.; Carlin, J.-F.; Christmann, G.; Lefebvre, P.; Ganière, J.-D.; Grandjean, N.; Deveaud-Plédran, B.

    2012-06-01

    We report on the direct observation of biexcitons in a III-nitride based multiple quantum well microcavity operating in the strong light-matter coupling regime by means of nonresonant continuous wave and time-resolved photoluminescence at low temperature. First, the biexciton dynamics is investigated for the bare active medium (multiple quantum wells alone) evidencing localization on potential fluctuations due to alloy disorder and thermalization between both localized and free excitonic and biexcitonic populations. Then, the role of biexcitons is considered for the full microcavity: in particular, we observe that for specific detunings the bottom of the lower polariton branch is directly fed by the radiative dissociation of either cavity biexcitons or excitons mediated by one LO-phonon. Accordingly, minimum polariton lasing thresholds are observed, when the bottom of the lower polariton branch corresponds in energy to the exciton or cavity biexciton first LO-phonon replica. This singular observation highlights the role of excitonic molecules in the polariton condensate formation process as being a more efficient relaxation channel when compared to the usually assumed acoustical phonon emission one.

  3. Bandgaps and band offsets in strain-compensated InGaAs/InGaAsP multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Ma, Chunsheng; Jin, Zhi; Tian, Fengshou; Yang, Ningguo; Yang, Shuren; Liu, Shiyong

    1998-08-01

    In terms of the parameter interpolation principle, calculations are performed for bandgaps and band offsets in strain-compensated InzGa1-zAs/InxGa1-xAsyP1-y multiple quantum well structures on InP. Relations between strains and material compositions in InzGa1-zAs wells and InxGa1-xAsyP1-y barriers are analyzed, and relative ranges of strains are evaluated. Bandgaps of InzGa1-zAs wells and InxGa1-xAsyP1-y barriers for heavy- and light-holes are studied, and relative ranges of bandgaps are estimated. Dependence of band offsets of conduction band and valence band for heavy- and light-holes on strain compensation between InzGa1-zAs wells and InxGa1-xAsyP1-y barriers is investigated, and variation of band offsets versus strain compensation is discussed. The computed results show that strains, bandgaps and band offsets are functions of material compositions, strain compensation changes the band offsets, and hence modifies the band structures and improves the features of strain- compensated multiple quantum well optoelectronic devices.

  4. Influence of temperature on the mechanism of carrier injection in light-emitting diodes based on InGaN/GaN multiple quantum wells

    SciTech Connect

    Prudaev, I. A. Golygin, I. Yu.; Shirapov, S. B.; Romanov, I. S.; Khludkov, S. S.; Tolbanov, O. P.

    2013-10-15

    The experimental current-voltage characteristics and dependences of the external quantum yield on the current density of light-emitting diodes based on InGaN/GaN multiple quantum wells for the wide temperature range T = 10-400 K are presented. It is shown that, at low-temperatures T < 100 K, the injection of holes into the quantum wells occurs from localized acceptor states. The low-temperature injection of electrons into p-GaN occurs due to quasi-ballistic transport in the region of multiple quantum wells. An increase in temperature leads to an increase in the current which is governed by thermally activated hole and electron injection from the allowed bands of GaN.

  5. Ultrafast Supercontinuum Spectroscopy of Carrier Multiplication and Biexcitonic Effects in Excited States of PbS Quantum Dots

    SciTech Connect

    Sfeir M. Y.; Gesuele, F.; Koh, W.-K.; Murray, C.B.; Heinz, T.F.; Wong, C.W.

    2012-06-01

    We examine the population dynamics of multiple excitons in PbS quantum dots using spectrally resolved ultrafast supercontinuum transient absorption (SC-TA) measurements. We simultaneously probe the first three excitonic transitions. The transient spectra show the presence of bleaching of absorption for the 1S{sub h}-1S{sub e} transition, as well as transients associated with the 1P{sub h}-1P{sub e} transition. We examine signatures of carrier multiplication (multiple excitons arising from a single absorbed photon) from analysis of the bleaching features in the limit of low absorbed photon numbers (multiple-exciton generation is discussed both in terms of the ratio between early- to long-time transient absorption signals and of a broadband global fit to the data. Analysis of the population dynamics shows that bleaching associated with biexciton population is red shifted with respect to the single exciton feature, which is in accordance with a positive binding energy for the biexciton.

  6. On-chip photonic system using suspended p-n junction InGaN/GaN multiple quantum wells device and multiple waveguides

    NASA Astrophysics Data System (ADS)

    Wang, Yongjin; Zhu, Guixia; Cai, Wei; Gao, Xumin; Yang, Yongchao; Yuan, Jialei; Shi, Zheng; Zhu, Hongbo

    2016-04-01

    We propose, fabricate, and characterize the on-chip integration of suspended p-n junction InGaN/GaN multiple quantum wells (MQWs) device and multiple waveguides on the same GaN-on-silicon platform. The integrated devices are fabricated via a wafer-level process and exhibit selectable functionalities for diverse applications. As the suspended p-n junction InGaN/GaN MQWs device operates under a light emitting diode (LED) mode, part of the light emission is confined and guided by the suspended waveguides. The in-plane propagation along the suspended waveguides is measured by a micro-transmittance setup. The on-chip data transmission is demonstrated for the proof-of-concept photonic integration. As the suspended p-n junction InGaN/GaN MQWs device operates under photodiode mode, the light is illuminated on the suspended waveguides with the aid of the micro-transmittance setup and, thus, coupled into the suspended waveguides. The guided light is finally sensed by the photodiode, and the induced photocurrent trace shows a distinct on/off switching performance. These experimental results indicate that the on-chip photonic integration is promising for the development of sophisticated integrated photonic circuits in the visible wavelength region.

  7. Picture this: The value of multiple visual representations for student learning of quantum concepts in general chemistry

    NASA Astrophysics Data System (ADS)

    Allen, Emily Christine

    Mental models for scientific learning are often defined as, "cognitive tools situated between experiments and theories" (Duschl & Grandy, 2012). In learning, these cognitive tools are used to not only take in new information, but to help problem solve in new contexts. Nancy Nersessian (2008) describes a mental model as being "[loosely] characterized as a representation of a system with interactive parts with representations of those interactions. Models can be qualitative, quantitative, and/or simulative (mental, physical, computational)" (p. 63). If conceptual parts used by the students in science education are inaccurate, then the resulting model will not be useful. Students in college general chemistry courses are presented with multiple abstract topics and often struggle to fit these parts into complete models. This is especially true for topics that are founded on quantum concepts, such as atomic structure and molecular bonding taught in college general chemistry. The objectives of this study were focused on how students use visual tools introduced during instruction to reason with atomic and molecular structure, what misconceptions may be associated with these visual tools, and how visual modeling skills may be taught to support students' use of visual tools for reasoning. The research questions for this study follow from Gilbert's (2008) theory that experts use multiple representations when reasoning and modeling a system, and Kozma and Russell's (2005) theory of representational competence levels. This study finds that as students developed greater command of their understanding of abstract quantum concepts, they spontaneously provided additional representations to describe their more sophisticated models of atomic and molecular structure during interviews. This suggests that when visual modeling with multiple representations is taught, along with the limitations of the representations, it can assist students in the development of models for reasoning about

  8. Dynamic light-matter coupling across multiple spatial dimensions in a quantum dots-in-a-well heterostructure

    SciTech Connect

    Prasankumar, Rohit P; Taylor, Antoinette J

    2009-01-01

    Ultrafast density-dependent optical spectroscopic measurements on a quantum dots-in-a-well heterostructure reveal several distinctive phenomena, most notably a strong coupling between the quantum well population and light absorption at the quantum dot excited state.

  9. Deep UV AlGaN light emitting diodes grown by gas source molecular beam epitaxy on sapphire and AlGaN/sapphire substrates

    NASA Astrophysics Data System (ADS)

    Nikishin, S.; Borisov, B.; Kuryatkov, V.; Usikov, A.; Dmitriev, V.; Holtz, M.

    2006-02-01

    We report the electrical and optical properties of deep ultraviolet light emitting diodes (LEDs) based on digital alloy structures (DAS) of AlN/Al 0.08Ga 0.92N grown by gas source molecular beam epitaxy with ammonia on sapphire substrates and AlGaN/sapphire templates. AlGaN/sapphire templates were grown by recently developed stress controlled hydride vapor phase epitaxy (HVPE). For DAS with effective bandgap of 5.1 eV we obtain room temperature electron concentrations up to 1x10 19 cm -3 and hole concentrations of 1x10 18 cm -3. Based on these results we prepared double heterostructure (DHS) LEDs operating in the range of 250 to 290 nm. The emission wavelengths were controlled through the effective bandgap of the active region. The possible ways for increase of LED's efficiency are discussed. We observed significant improvement in the room temperature luminescence efficiency (by factor of 100) of AlGaN quantum wells when a transition growth mode is induced by reduced flux of ammonia. We found that active layer grown on HVPE AlGaN/sapphire substrates have higher luminescence efficiency (by factor of 3) than DAS grown on sapphire.

  10. Temperature dependent photoluminescence and micromapping of multiple stacks InAs quantum dots

    SciTech Connect

    Xu, Ming Jaffré, Alexandre Alvarez, José Kleider, Jean-Paul Boutchich, Mohamed; Jittrong, Apichat; Chokamnuai, Thitipong; Panyakeow, Somsak; Kanjanachuchai, Songphol

    2015-02-27

    We utilized temperature dependent photoluminescence (PL) techniques to investigate 1, 3 and 5 stack InGaAs quantum dots (QDs) grown on cross-hatch patterns. PL mapping can well reproduce the QDs distribution as AFM and position dependency of QD growth. It is possible to observe crystallographic dependent PL. The temperature dependent spectra exhibit the QDs energy distribution which reflects the size and shape. The inter-dot carrier coupling effect is observed and translated as a red shift of 120mV on the [1–10] direction peak is observed at 30K on 1 stack with regards to 3 stacks samples, which is assigned to lateral coupling.

  11. Performance enhancement of InGaN light-emitting diodes with a leakage electron recombination quantum well

    NASA Astrophysics Data System (ADS)

    Li, Fangzheng; Lin, Hong; Li, Jing; Xie, Nan; Guo, Zhiyou

    2014-12-01

    An InGaN light-emitting diodes with a leakage electron recombination (LER) quantum well have been proposed and investigated numerically by using the APSYS simulation software. The simulation results indicate that the AlGaN electron blocking layer inserted between the last two quantum wells changed the carrier concentrations distribution, and the leakage electrons can be further recombined with holes in the LER quantum well which can decrease the electrons that spill out from active region. As a result, the internal quantum efficiency and light output power are markedly improved attributed to LER quantum well.

  12. Multiple environment single system quantum mechanical/molecular mechanical (MESS-QM/MM) calculations. 1. Estimation of polarization energies

    SciTech Connect

    Sodt, Alexander J.; Mei, Ye; Konig, Gerhard; Tao, Peng; Steele, Ryan P.; Brooks, Bernard R.; Shao, Yihan

    2014-10-16

    In combined quantum mechanical/molecular mechanical (QM/MM) free energy calculations, it is often advantageous to have a frozen geometry for the quantum mechanical (QM) region. For such multiple-environment single-system (MESS) cases, two schemes are proposed here for estimating the polarization energy: the first scheme, termed MESS-E, involves a Roothaan step extrapolation of the self-consistent field (SCF) energy; whereas the other scheme, termed MESS-H, employs a Newton–Raphson correction using an approximate inverse electronic Hessian of the QM region (which is constructed only once). Both schemes are extremely efficient, because the expensive Fock updates and SCF iterations in standard QM/MM calculations are completely avoided at each configuration. Here, they produce reasonably accurate QM/MM polarization energies: MESS-E can predict the polarization energy within 0.25 kcal/mol in terms of the mean signed error for two of our test cases, solvated methanol and solvated β-alanine, using the M06-2X or ωB97X-D functionals; MESS-H can reproduce the polarization energy within 0.2 kcal/mol for these two cases and for the oxyluciferin–luciferase complex, if the approximate inverse electronic Hessians are constructed with sufficient accuracy.

  13. An approach to high efficiencies using GaAs/GaInNAs multiple quantum well and superlattice solar cell

    NASA Astrophysics Data System (ADS)

    Courel, Maykel; Rimada, Julio C.; Hernández, Luis

    2012-09-01

    A new type of photovoltaic device where GaAs/GaInNAs multiple quantum wells (MQW) or superlattice (SL) are inserted in the i-region of a GaAs p-i-n solar cell (SC) is presented. The results suggest the device can reach record efficiencies for single-junction solar cells. A theoretical model is developed to study the performance of this device. The conversion efficiency as a function of wells width and depth is modeled for MQW solar cells. It is shown that the MQW solar cells reach high conversion efficiency values. A study of the SL solar cell viability is also presented. The conditions for resonant tunneling are established by the matrix transfer method for a superlattice with variable quantum wells width. The effective density of states and the absorption coefficient for SL structure are calculated in order to determinate the J-V characteristic. The influence of superlattice length on the conversion efficiency is researched, showing a better performance when width and cluster numbers are increased. The SL solar cell conversion efficiency is compared with the maximum conversion efficiency obtained for the MQW solar cell and shows an efficiency enhancement.

  14. Multiple environment single system quantum mechanical/molecular mechanical (MESS-QM/MM) calculations. 1. Estimation of polarization energies

    DOE PAGES

    Sodt, Alexander J.; Mei, Ye; Konig, Gerhard; ...

    2014-10-16

    In combined quantum mechanical/molecular mechanical (QM/MM) free energy calculations, it is often advantageous to have a frozen geometry for the quantum mechanical (QM) region. For such multiple-environment single-system (MESS) cases, two schemes are proposed here for estimating the polarization energy: the first scheme, termed MESS-E, involves a Roothaan step extrapolation of the self-consistent field (SCF) energy; whereas the other scheme, termed MESS-H, employs a Newton–Raphson correction using an approximate inverse electronic Hessian of the QM region (which is constructed only once). Both schemes are extremely efficient, because the expensive Fock updates and SCF iterations in standard QM/MM calculations are completelymore » avoided at each configuration. Here, they produce reasonably accurate QM/MM polarization energies: MESS-E can predict the polarization energy within 0.25 kcal/mol in terms of the mean signed error for two of our test cases, solvated methanol and solvated β-alanine, using the M06-2X or ωB97X-D functionals; MESS-H can reproduce the polarization energy within 0.2 kcal/mol for these two cases and for the oxyluciferin–luciferase complex, if the approximate inverse electronic Hessians are constructed with sufficient accuracy.« less

  15. Enhanced power conversion efficiency in InGaN-based solar cells via graded composition multiple quantum wells.

    PubMed

    Tsai, Yu-Lin; Wang, Sheng-Wen; Huang, Jhih-Kai; Hsu, Lung-Hsing; Chiu, Ching-Hsueh; Lee, Po-Tsung; Yu, Peichen; Lin, Chien-Chung; Kuo, Hao-Chung

    2015-11-30

    This work demonstrates the enhanced power conversion efficiency (PCE) in InGaN/GaN multiple quantum well (MQWs) solar cells with gradually decreasing indium composition in quantum wells (GQWs) toward p-GaN as absorber. The GQW can improve the fill factor from 42% to 62% and enhance the short current density from 0.8 mA/cm2 to 0.92 mA/cm2, as compares to the typical MQW solar cells. As a result, the PCE is boosted from 0.63% to 1.11% under AM1.5G illumination. Based on simulation and experimental results, the enhanced PCE can be attributed to the improved carrier collection in GQW caused by the reduction of potential barriers and piezoelectric polarization induced fields near the p-GaN layer. The presented concept paves a way toward highly efficient InGaN-based solar cells and other GaN-related MQW devices.

  16. Photoexcited electron and hole dynamics in semiconductor quantum dots: phonon-induced relaxation, dephasing, multiple exciton generation and recombination

    NASA Astrophysics Data System (ADS)

    Hyeon-Deuk, Kim; Prezhdo, Oleg V.

    2012-09-01

    Photoexcited dynamics of electrons and holes in semiconductor quantum dots (QD), including phonon-induced relaxation, multiple exciton generation, fission and recombination (MEG, MEF and MER), were simulated by combining ab initio time-dependent density functional theory and non-adiabatic molecular dynamics. These nonequilibrium phenomena govern the optical properties and photoexcited dynamics of QDs, determining the branching between electronic processes and thermal energy losses. Our approach accounts for QD size and shape as well as defects, core-shell distribution, surface ligands and charge trapping, which significantly influence the properties of photoexcited QDs. The method creates an explicit time-domain representation of photoinduced processes and describes various kinetic regimes owing to the non-perturbative treatment of quantum dynamics. QDs of different sizes and materials, with and without ligands, are considered. The simulations provide direct evidence that the high-frequency ligand modes on the QD surface play a pivotal role in the electron-phonon relaxation, MEG, MEF and MER. The insights reported here suggest novel routes for controlling the photoinduced processes in semiconductor QDs and lead to new design principles for increasing the efficiencies of photovoltaic devices.

  17. Nonlinear absorption properties of AlGaAs/GaAs multiple quantum wells grown by metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Lee, Hsing-Chung; Kost, A.; Kawase, M.; Hariz, A.; Dapkus, P. Daniel

    1988-01-01

    The nonlinear absorption properties of the excitonic resonances associated with multiple quantum wells (MQWs) in AlGaAs/GaAs grown by metalorganic chemical vapor deposition are reported. The dependence of the saturation properties on growth parameters, especially growth temperature, and the well width are described. The minimum measured saturation intensity for these materials is 250 W/sq cm, the lowest reported value to date. The low saturation intensities are the result of excellent minority carrier properties. A systematic study of minority carrier lifetimes in quantum wells are reported. Lifetimes range from 50-350 ns depending on growth temperature and well width. When corrected for lateral diffusion effects and the measured minority carrier lifetime, the saturation data suggest that saturation intensities as low as 2.3 W/sq cm can be achieved in this system. The first measurements of the dependence of the exciton area and the magnitude of the excitonic absorption on well width are prsented. The growth of MQW structures on transparent GaP substrates is demonstrated and the electroabsorption properties of these structures are reviewed.

  18. Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells

    DOE PAGES

    Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel; ...

    2012-01-15

    We report on the thermal evolution of the photoluminescence (PL) from high In-content InN/In{sub 0.9}Ga{sub 0.1}N multiple-quantum wells (MQWs) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire templates. The structural quality and the well/barrier thickness uniformity in the MQW structure are assessed by X-ray diffraction and transmission electron microscopy measurements. PL results are compared with the luminescence from a 1-{mu}m-thick InN reference sample. In both cases, the dominant low-temperature (5 K) PL emission peaks at {proportional_to}0.73 eV with a full width at half maximum of {proportional_to}86 meV. The InN layer displays an S-shape evolution of the emission peak energy with temperature,more » explained in terms of carrier localization. A carrier localization energy of {proportional_to}12 meV is estimated for the InN layer, in good agreement with the expected carrier concentration. In the case of the MQW structure, an enhancement of the carrier localization associated to the piezoelectric field results in an improved thermal stability of the PL intensity, reaching an internal quantum efficiency of {proportional_to}16%. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)« less

  19. Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells

    DOE PAGES

    Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel; ...

    2012-01-15

    We report on the thermal evolution of the photoluminescence (PL) from high In-content InN/In{sub 0.9}Ga{sub 0.1}N multiple-quantum wells (MQWs) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire templates. The structural quality and the well/barrier thickness uniformity in the MQW structure are assessed by X-ray diffraction and transmission electron microscopy measurements. PL results are compared with the luminescence from a 1-{mu}m-thick InN reference sample. In both cases, the dominant low-temperature (5 K) PL emission peaks at {proportional{sub to}}0.73 eV with a full width at half maximum of {proportional{sub to}}86 meV. The InN layer displays an S-shape evolution of the emission peak energymore » with temperature, explained in terms of carrier localization. A carrier localization energy of {proportional{sub to}}12 meV is estimated for the InN layer, in good agreement with the expected carrier concentration. In the case of the MQW structure, an enhancement of the carrier localization associated to the piezoelectric field results in an improved thermal stability of the PL intensity, reaching an internal quantum efficiency of {proportional{sub to}}16%. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)« less

  20. Three Temperature Regimes in Superconducting Photon Detectors: Quantum, Thermal and Multiple Phase-Slips as Generators of Dark Counts

    PubMed Central

    Murphy, Andrew; Semenov, Alexander; Korneev, Alexander; Korneeva, Yulia; Gol’tsman, Gregory; Bezryadin, Alexey

    2015-01-01

    We perform measurements of the switching current distributions of three w ≈ 120 nm wide, 4 nm thick NbN superconducting strips which are used for single-photon detectors. These strips are much wider than the diameter of the vortex cores, so they are classified as quasi-two-dimensional (quasi-2D). We discover evidence of macroscopic quantum tunneling by observing the saturation of the standard deviation of the switching distributions at temperatures around 2 K. We analyze our results using the Kurkijärvi-Garg model and find that the escape temperature also saturates at low temperatures, confirming that at sufficiently low temperatures, macroscopic quantum tunneling is possible in quasi-2D strips and can contribute to dark counts observed in single photon detectors. At the highest temperatures the system enters a multiple phase-slip regime. In this range single phase-slips are unable to produce dark counts and the fluctuations in the switching current are reduced. PMID:25988591

  1. Three temperature regimes in superconducting photon detectors: quantum, thermal and multiple phase-slips as generators of dark counts.

    PubMed

    Murphy, Andrew; Semenov, Alexander; Korneev, Alexander; Korneeva, Yulia; Gol'tsman, Gregory; Bezryadin, Alexey

    2015-05-19

    We perform measurements of the switching current distributions of three w ≈ 120 nm wide, 4 nm thick NbN superconducting strips which are used for single-photon detectors. These strips are much wider than the diameter of the vortex cores, so they are classified as quasi-two-dimensional (quasi-2D). We discover evidence of macroscopic quantum tunneling by observing the saturation of the standard deviation of the switching distributions at temperatures around 2 K. We analyze our results using the Kurkijärvi-Garg model and find that the escape temperature also saturates at low temperatures, confirming that at sufficiently low temperatures, macroscopic quantum tunneling is possible in quasi-2D strips and can contribute to dark counts observed in single photon detectors. At the highest temperatures the system enters a multiple phase-slip regime. In this range single phase-slips are unable to produce dark counts and the fluctuations in the switching current are reduced.

  2. Imaging of multiple mRNA targets using quantum dot based in situ hybridization and spectral deconvolution in clinical biopsies

    SciTech Connect

    Tholouli, Eleni; Hoyland, Judith A.; Di Vizio, Dolores; O'Connell, Fionnuala; MacDermott, Sarah A.; Twomey, David; Levenson, Richard; Yin, John A. Liu; Golub, Todd R.; Loda, Massimo; Byers, Richard . E-mail: r.byers@manchester.ac.uk

    2006-09-22

    Gene expression mapping using microarray analysis has identified useful gene signatures for predicting outcome. However, little of this has been translated into clinically effective diagnostic tools as microarrays require high quality fresh-frozen tissue samples. We describe a methodology of multiplexed in situ hybridization (ISH) using a novel combination of quantum dot (QD)-labeled oligonucleotide probes and spectral imaging analysis in routinely processed, formalin-fixed paraffin embedded human biopsies. The conditions for QD-ISH were optimized using a poly d(T) oligonucleotide in decalcified bone marrow samples. Single and multiplex QD-ISH was performed in samples with acute leukemia and follicular lymphoma using oligonucleotide probes for myeloperoxidase, bcl-2, survivin, and XIAP. Spectral imaging was used for post hybridization tissue analysis, enabling separation of spatially colocalized signals. The method allows quantitative characterization of multiple gene expression using non-bleaching fluorochromes. This is expected to facilitate multiplex in situ transcript detection in routinely processed human clinical tissue.

  3. Atmospheric-pressure epitaxial growth technique of a multiple quantum well by mist chemical vapor deposition based on Leidenfrost droplets

    NASA Astrophysics Data System (ADS)

    Kawaharamura, Toshiyuki; Dang, Giang T.; Nitta, Noriko

    2016-10-01

    A multiple quantum well α-Fe2O3/α-Ga2O3 with parallel and coherent formation of uniform and highly single-crystalline layers on a sapphire substrate has been fabricated by open-air atmospheric-pressure solution-processed mist chemical vapor deposition (Mist CVD). This report demonstrates that complicated structures with atomic-level control can be fabricated even in non-vacuum conditions by the Mist CVD. This can be achieved via the precise control of the precursor flow and ambient temperature combined with the formation of mist droplets of the special Leidenfrost state, which increased the atomic migration length by 108 times more than that of traditional vacuum techniques. This work could be a milestone in the transformation from vacuum to non-vacuum thin film deposition techniques towards a green and sustainable industry.

  4. Low-temperature pulsed sputtering growth of InGaN multiple quantum wells for photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Arakawa, Yasuaki; Ueno, Kohei; Noguchi, Hidenari; Ohta, Jitsuo; Fujioka, Hiroshi

    2017-03-01

    We investigated the potential of low-temperature pulsed sputtering deposition (PSD) for the fabrication of high-In-composition thick InGaN multiple quantum wells (MQWs). Low-temperature PSD growth allowed the growth of a 100-period 1.2-nm-thick In0.3Ga0.7N MQW on GaN bulk crystals without apparent lattice relaxation. We fabricated a nitride-based photovoltaic device using 100-period In0.3Ga0.7N MQW absorption layers and obtained a clear photovoltaic response with an open-circuit voltage of 1.24 V, a short-circuit current density of 1.76 mA·cm‑2, and a maximum output power density of 1.10 mW·cm‑2 under 1 sun with air mass 1.5 illumination.

  5. Membrane-type photonic integration of InGaN/GaN multiple-quantum-well diodes and waveguide

    NASA Astrophysics Data System (ADS)

    Gao, Xumin; Bai, Dan; Cai, Wei; Xu, Yin; Yuan, Jialei; Yang, Yongchao; Zhu, Guixia; Cao, Xun; Zhu, Hongbo; Wang, Yongjin

    2017-02-01

    We report here a membrane-type integration of InGaN/GaN multiple-quantum-well diodes (MQWDs) with a waveguide to build a highly integrated photonic system to perform functionalities on a GaN-on-silicon platform. Suspended MQWDs can be used as either for light-emitting diode (LED) or photodiode. In the fabricated photonic system, part of the LED emission is coupled into a suspended waveguide, and the guided light laterally propagates along the waveguide and is finally sensed by the photodiode. The photonic system can detect the in-plane guided light and the external incident light simultaneously. Planar optical communication experimentally demonstrates that the proof-of-concept monolithic photonic integration system can achieve the in-plane visible light communication. This work paves the way towards novel active electro-optical sensing systems and planar optical communication in the visible range.

  6. Optical bistability and multistability in a defect slab doped by GaAs/AlGaAs multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Seyyed, Hossein Asadpour; G, Solookinejad; M, Panahi; E Ahmadi, Sangachin

    2016-05-01

    We proposed a new model for controlling the optical bistability (OB) and optical multistability (OM) in a defect slab doped with four-level GaAs/AlGaAs multiple quantum wells with 15 periods of 17.5 nm GaAs wells and 15-nm Al0.3 Ga0.7As barriers. The effects of biexciton energy renormalization, exciton spin relaxation, and thickness of the slab on the OB and OM properties of the defect slab were theoretically investigated. We found that the transition from OB to OM or vice versa is possible by adjusting the controllable parameters in a lab. Moreover, the transmission, reflection, and absorption properties of the weak probe light through the slab were also discussed in detail.

  7. Extended defects in InGaAs/InGaAs strain-balanced multiple quantum wells for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Nasi, Lucia; Ferrari, Claudio; Lazzarini, Laura; Salviati, Giancarlo; Tundo, Stefania; Mazzer, Massimo; Clarke, Graham; Rohr, Carsten

    2002-12-01

    Different strain-balanced InGaAs/InGaAs multiple quantum wells (MQWs) were grown on (001) InP changing the In composition in the wells/barriers in order to extend the absorption edge beyond 2 μm for thermophotovoltaic applications. The strain increase in the structures results in the formation of isolated highly defected regions taking their origin from lateral layer thickness modulations. Experimental results are consistent with the existence of a critical elastic energy density for the development of MQW waviness. An empirical model for predicting the maximum number of layers that can be grown without modulations as a function of the strain energy stored in the MQW period is presented.

  8. Carrier localization in InN/InGaN multiple-quantum wells with high In-content

    NASA Astrophysics Data System (ADS)

    Valdueza-Felip, S.; Rigutti, L.; Naranjo, F. B.; Ruterana, P.; Mangeney, J.; Julien, F. H.; González-Herráez, M.; Monroy, E.

    2012-08-01

    We study the carrier localization in InN/In0.9Ga0.1N multiple-quantum-wells (MQWs) and bulk InN by means of temperature-dependent photoluminescence and pump-probe measurements at 1.55 μm. The S-shaped thermal evolution of the emission energy of the InN film is attributed to carrier localization at structural defects with an average localization energy of ˜12 meV. Carrier localization is enhanced in the MQWs due to well/barrier thickness and ternary alloy composition fluctuations, leading to a localization energy above 35 meV and longer carrier relaxation time. As a result, the luminescence efficiency in the MQWs is improved by a factor of five over bulk InN.

  9. Degenerate four-wave mixing in room-temperature GaAs/GaAlAs multiple quantum well structures

    NASA Astrophysics Data System (ADS)

    Miller, D. A. B.; Chemla, D. S.; Eilenberger, D. J.; Smith, P. W.; Gossard, A. C.; Wiegman, W.

    1983-06-01

    Degenerate four-wave mixing (DFWM) is of current interest both for practical applications (e.g., phase conjugation) and as a physical probe. DFWM makes it possible to detect very small nonlinear changes in refraction. In connection with the present investigation, the first observations of DFWM in GaAs/GaAlAs multiple quantum well structures (MQW's) at room temperature are reported. By combining DFWM and nonlinear absorption results, a direct measurement of the nonlinear refraction near the band gap of the MQW is conducted. The obtained value is compared with previous estimates. The measurements are of practical importance for possible low-power optical devices compatible with laser diodes based either on DFWM, nonlinear refraction (such as optical bistability) of nonlinear absorption. The MQW samples were grown by molecular beam epitaxy (MBE) on GaAs substrates, with the MQW layers sandwiched between GaAlAs cap layers which are transparent at the considered wavelengths.

  10. SIMQUADNMR: a program for simulation and interpretation of multiple quantum-filtered NMR spectra of quadrupolar nuclei.

    PubMed

    D'Amelio, Nicola; Gaggelli, Elena; Molteni, Elena; Valensin, Gianni

    2005-01-01

    In this paper, we present a computer program which simulates NMR multiple quantum-filtered spectra of quadrupolar nuclei as a function of physical parameters, of the type of experiment and experimental conditions. The program works by solving relaxation theory equations for the given system, and it can be useful in order to plan the ideal conditions to set up specific experiments or to give a physical interpretation of experimental results. The program allows to independently follow the dependence of individual coherences and relaxation rates as a function of up to 50 parameters regarding the physical properties of the system under investigation, sample conditions and instrumental setup making it an helpful tool also for teaching purposes.

  11. Reduction in leakage current in AlGaN/GaN HEMT with three Al-containing step-graded AlGaN buffer layers on silicon

    NASA Astrophysics Data System (ADS)

    Yu, Xinxin; Ni, Jinyu; Li, Zhonghui; Zhou, Jianjun; Kong, Cen

    2014-05-01

    AlGaN/GaN high-electron-mobility transistor (HEMT) structures with two and three Al-containing step-graded AlGaN buffer layers (BLs) were grown on silicon (111) substrates by metal organic chemical vapor deposition. Considerable tensile stress was observed in the GaN grown with only two 0.8 µm AlGaN BLs, while a large in-plane compression in GaN grown with three 2.3 µm AlGaN BLs. The reverse gate leakage current in the HEMT with three AlGaN BLs was approximately 0.1 µA/mm, which was more than one order of magnitude smaller than that for the HEMT with two AlGaN BLs. A three-terminal off-state breakdown voltage of 265 V and a vertical gate-to-substrate breakdown voltage of 510 V were obtained in the HEMT with three AlGaN BLs. Detailed analysis was performed on the basis of the structural properties of AlGaN/GaN heterostructures.

  12. Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications

    NASA Astrophysics Data System (ADS)

    Hospodková, Alice; Pangrác, Jiří; Kuldová, Karla; Nikl, Martin; Pacherová, Oliva; Oswald, Jiří; Hubáček, Tomáš; Zíková, Markéta; Brůža, Petr; Pánek, Dalibor; Blažek, Karel; Ledoux, Gilles; Dujardin, Christophe; Heuken, Michael; Hulicius, Eduard

    2016-02-01

    Fast scintillators are necessary for electron microscopes, as well as in many other application fields like medical diagnostics and therapy and fundamental science. InGaN/GaN multiple quantum well structures (QW) are perspective candidates due to strong exciton binding energy, high quantum efficiency, short decay time in order of ns and good radiation resistance. The aim of our work is to prepare scintillator structure with fast luminescence response and high intensity of light. InGaN/GaN multiple QW structures described here were prepared by metal-organic vapour phase epitaxy and characterized by high resolution X-ray diffraction measurements. We demonstrate structure suitability for scintillator application including a unique measurement of wavelength-resolved scintillation response under nanosecond pulse soft X-ray source in extended dynamical and time scales. The photo-, radio- and cathodo-luminescence (PL, RL, CL) were measured. We observed double peak luminescence governed by different recombination mechanisms: i) exciton in QW and ii) related to defects. We have shown that for obtaining fast and intensive luminescence response proper structure design is required. The radioluminescence decay time of QW exciton maximum decreased 4 times from 16 ns to 4 ns when the QW thickness was decreased from 2.4 nm to 2 nm. We have proved suitability of InGaN/GaN structures for fast scintillator application for electron or other particle radiation detection. For x-ray detection the fast scintillation response would be hard to achieve due to the dominant slow defect luminescence maximum.

  13. Growth and characterization of AlGaN films on patterned sapphire substrates

    NASA Astrophysics Data System (ADS)

    Kwak, Y. S.; Lee, D. S.; Kim, K. H.; Kim, W. H.; Moon, S. W.

    2011-12-01

    A GaN film and two AlGaN films with Al compositions of 5% and 10% have been grown on the patterned sapphire substrates (PSSs) by metal organic chemical vapor deposition (MOCVD). Optical properties and crystalline qualities of the films have been investigated. The GaN film and the Al0.05Ga0.95N film are almost entirely coalesced except for some point defects. However, the Al0.1Ga0.9N film contains large pits encircled by small pits adjacent to them. The large pits are distributed in the same manner with the PSS arrangement. Dislocations and inversion domain boundaries were also observed in the Al0.1Ga0.9N film.

  14. Deep ultraviolet photoluminescence of Tm-doped AlGaN alloys

    SciTech Connect

    Nepal, N.; Zavada, J. M.; Lee, D. S.; Steckl, A. J.; Sedhain, A.; Lin, J. Y.; Jiang, H. X.

    2009-03-16

    The ultraviolet (UV) photoluminescence (PL) properties of Tm-doped Al{sub x}Ga{sub 1-x}N (0.39{<=}x{<=}1) alloys grown by solid-source molecular beam epitaxy were probed using above-bandgap excitation from a laser source at 197 nm. The PL spectra show dominant UV emissions at 298 and 358 nm only for samples with x=1 and 0.81. Temperature dependence of the PL intensities of these emission lines reveals exciton binding energies of 150 and 57 meV, respectively. The quenching of these UV emissions appears related to the thermal activation of the excitons bound to rare-earth structured isovalent (RESI) charge traps, which transfer excitonic energy to Tm{sup 3+} ions resulting in the UV emissions. A model of the RESI trap levels in AlGaN alloys is presented.

  15. Improving hole injection and carrier distribution in InGaN light-emitting diodes by removing the electron blocking layer and including a unique last quantum barrier

    SciTech Connect

    Cheng, Liwen Chen, Haitao; Wu, Shudong

    2015-08-28

    The effects of removing the AlGaN electron blocking layer (EBL), and using a last quantum barrier (LQB) with a unique design in conventional blue InGaN light-emitting diodes (LEDs), were investigated through simulations. Compared with the conventional LED design that contained a GaN LQB and an AlGaN EBL, the LED that contained an AlGaN LQB with a graded-composition and no EBL exhibited enhanced optical performance and less efficiency droop. This effect was caused by an enhanced electron confinement and hole injection efficiency. Furthermore, when the AlGaN LQB was replaced with a triangular graded-composition, the performance improved further and the efficiency droop was lowered. The simulation results indicated that the enhanced hole injection efficiency and uniform distribution of carriers observed in the quantum wells were caused by the smoothing and thinning of the potential barrier for the holes. This allowed a greater number of holes to tunnel into the quantum wells from the p-type regions in the proposed LED structure.

  16. Optimized selective lactate excitation with a refocused multiple-quantum filter

    NASA Astrophysics Data System (ADS)

    Holbach, Mirjam; Lambert, Jörg; Johst, Sören; Ladd, Mark E.; Suter, Dieter

    2015-06-01

    Selective detection of lactate signals in in vivo MR spectroscopy with spectral editing techniques is necessary in situations where strong lipid or signals from other molecules overlap the desired lactate resonance in the spectrum. Several pulse sequences have been proposed for this task. The double-quantum filter SSel-MQC provides very good lipid and water signal suppression in a single scan. As a major drawback, it suffers from significant signal loss due to incomplete refocussing in situations where long evolution periods are required. Here we present a refocused version of the SSel-MQC technique that uses only one additional refocussing pulse and regains the full refocused lactate signal at the end of the sequence.

  17. Frequency up-conversion in nonpolar a-plane GaN/AlGaN based multiple quantum wells optimized for applications with silicon solar cells

    SciTech Connect

    Radosavljević, S.; Radovanović, J. Milanović, V.; Tomić, S.

    2014-07-21

    We have described a method for structural parameters optimization of GaN/AlGaN multiple quantum well based up-converter for silicon solar cells. It involves a systematic tuning of individual step quantum wells by use of the genetic algorithm for global optimization. In quantum well structures, the up-conversion process can be achieved by utilizing nonlinear optical effects based on intersubband transitions. Both single and double step quantum wells have been tested in order to maximize the second order susceptibility derived from the density matrix formalism. The results obtained for single step wells proved slightly better and have been further pursued to obtain a more complex design, optimized for conversion of an entire range of incident photon energies.

  18. Multiple exciton generation in quantum dots versus singlet fission in molecular chromophores for solar photon conversion.

    PubMed

    Beard, Matthew C; Johnson, Justin C; Luther, Joseph M; Nozik, Arthur J

    2015-06-28

    Both multiple exciton generation (MEG) in semiconductor nanocrystals and singlet fission (SF) in molecular chromophores have the potential to greatly increase the power conversion efficiency of solar cells for the production of solar electricity (photovoltaics) and solar fuels (artificial photosynthesis) when used in solar photoconverters. MEG creates two or more excitons per absorbed photon, and SF produces two triplet states from a single singlet state. In both cases, multiple charge carriers from a single absorbed photon can be extracted from the cell and used to create higher power conversion efficiencies for a photovoltaic cell or a cell that produces solar fuels, like hydrogen from water splitting or reduced carbon fuels from carbon dioxide and water (analogous to biological photosynthesis). The similarities and differences in the mechanisms and photoconversion cell architectures between MEG and SF are discussed.

  19. Enhancing the light extraction efficiency of AlGaN deep ultraviolet light emitting diodes by using nanowire structures

    SciTech Connect

    Djavid, Mehrdad; Mi, Zetian

    2016-02-01

    The performance of conventional AlGaN deep ultraviolet light emitting diodes has been limited by the extremely low light extraction efficiency (<10%), due to the unique transverse magnetic (TM) polarized light emission. Here, we show that, by exploiting the lateral side emission, the extraction efficiency of TM polarized light can be significantly enhanced in AlGaN nanowire structures. Using the three-dimensional finite-difference time domain simulation, we demonstrate that the nanowire structures can be designed to inhibit the emission of guided modes and redirect trapped light into radiated modes. A light extraction efficiency of more than 70% can, in principle, be achieved by carefully optimizing the nanowire size, nanowire spacing, and p-GaN thickness.

  20. Electrical detection of kidney injury molecule-1 with AlGaN /GaN high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Wang, H. T.; Kang, B. S.; Ren, F.; Pearton, S. J.; Johnson, J. W.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.

    2007-11-01

    AlGaN /GaN high electron mobility transistors (HEMTs) were used to detect kidney injury molecule-1 (KIM-1), an important biomarker for early kidney injury detection. The gate region consisted of 5nm gold deposited onto the AlGaN surface. The gold was conjugated to highly specific KIM-1 antibodies through a self-assembled monolayer of thioglycolic acid. The HEMT source-drain current showed a clear dependence on the KIM-1 concentration in phosphate-buffered saline solution. The limit of detection was 1ng/ml using a 20×50μm2 gate sensing area. This approach shows potential for both preclinical and clinical kidney injury diagnosis with accurate, rapid, noninvasive, and high throughput capabilities.

  1. Inductively coupled BCl3/Cl2 /Ar plasma etching of Al-rich AlGaN

    DOE PAGES

    Douglas, Erica A.; Sanchez, Carlos A.; Kaplar, Robert J.; ...

    2016-12-01

    Varying atomic ratios in compound semiconductors is well known to have large effects on the etching properties of the material. The use of thin device barrier layers, down to 25 nm, adds to the fabrication complexity by requiring precise control over etch rates and surface morphology. The effects of bias power and gas ratio of BCl3 to Cl2 for inductively coupled plasma etching of high Al content AlGaN were contrasted with AlN in this study for etch rate, selectivity, and surface morphology. Etch rates were greatly affected by both bias power and gas chemistry. Here we detail the effects ofmore » small variations in Al composition for AlGaN and show substantial changes in etch rate with regards to bias power as compared to AlN.« less

  2. Injection current dependences of electroluminescence transition energy in InGaN/GaN multiple quantum wells light emitting diodes under pulsed current conditions

    SciTech Connect

    Zhang, Feng; Ikeda, Masao Liu, Jianping; Zhang, Shuming; Zhou, Kun; Yang, Hui; Liu, Zongshun

    2015-07-21

    Injection current dependences of electroluminescence transition energy in blue InGaN/GaN multiple quantum wells light emitting diodes (LEDs) with different quantum barrier thicknesses under pulsed current conditions have been analyzed taking into account the related effects including deformation caused by lattice strain, quantum confined Stark effects due to polarization field partly screened by carriers, band gap renormalization, Stokes-like shift due to compositional fluctuations which are supposed to be random alloy fluctuations in the sub-nanometer scale, band filling effect (Burstein-Moss shift), and quantum levels in finite triangular wells. The bandgap renormalization and band filling effect occurring at high concentrations oppose one another, however, the renormalization effect dominates in the concentration range studied, since the band filling effect arising from the filling in the tail states in the valence band of quantum wells is much smaller than the case in the bulk materials. In order to correlate the carrier densities with current densities, the nonradiative recombination rates were deduced experimentally by curve-fitting to the external quantum efficiencies. The transition energies in LEDs both with 15 nm quantum barriers and 5 nm quantum barriers, calculated using full strengths of theoretical macroscopic polarization given by Barnardini and Fiorentini [Phys. Status Solidi B 216, 391 (1999)] are in excellent accordance with experimental results. The LED with 5 nm barriers has been shown to exhibit a higher transition energy and a smaller blue shift than those of LED with 15 nm barriers, which is mainly caused by the smaller internal polarization field in the quantum wells.

  3. Strain-compensated AlGaN /GaN/InGaN cladding layers in homoepitaxial nitride devices

    NASA Astrophysics Data System (ADS)

    Czernecki, R.; Krukowski, S.; Targowski, G.; Prystawko, P.; Sarzynski, M.; Krysko, M.; Kamler, G.; Grzegory, I.; Leszczynski, M.; Porowski, S.

    2007-12-01

    One of the most important problems in III-nitride violet laser diode technology is the lattice mismatch between the AlGaN cladding layers and the rest of the epitaxial structure. For efficiently working devices, it is necessary to have both a high Al content and thick claddings. This leads, however, to severe sample bowing and even cracking of the upper layer. In this work, we propose a cladding structure of strain-compensated AlGaN /GaN/InGaN superlattice grown by metal-organic vapor phase epitaxy on bulk GaN substrates. Various thicknesses and compositions of the layers were employed. We measured the radius of bowing, lattice mismatches, aluminum and indium contents, and densities of threading dislocations. The proposed cladding structures suppress bowing and cracking, which are the two parasitic effects commonly experienced in laser diodes with bulk AlGaN claddings. The suppression of cracking and bowing is shown to occur due to modified strain energy distribution of the superlattices structure.

  4. Field-Induced Multiple Reentrant Quantum Phase Transitions in Randomly Dimerized Antiferromagnetic S=1/2 Heisenberg Chains

    NASA Astrophysics Data System (ADS)

    Hida, Kazuo

    2006-07-01

    The multiple reentrant quantum phase transitions in the S=1/2 antiferromagnetic Heisenberg chains with random bond alternation in the magnetic field are investigated by the density matrix renormalization group method combined with interchain mean field approximation. It is assumed that odd numbered bonds are antiferromagnetic with strength J and even numbered bonds can take the values JS and JW (JS > J > JW > 0) randomly with the probabilities p and 1- p, respectively. The pure version ( p=0 and 1) of this model has a spin gap but exhibits a field-induced antiferromagnetism in the presence of interchain coupling if Zeeman energy due to the magnetic field exceeds the spin gap. For 0 < p < 1, antiferromagnetism is induced by randomness at the small field region where the ground state is disordered due to the spin gap in the pure version. At the same time, this model exhibits randomness-induced plateaus at several values of magnetization. The antiferromagnetism is destroyed on the plateaus. As a consequence, we find a series of reentrant quantum phase transitions between transverse antiferromagnetic phases and disordered plateau phases with the increase of magnetic field for a moderate strength of interchain coupling. Above the main plateaus, the magnetization curve consists of a series of small plateaus and jumps between them. It is also found that antiferromagnetism is induced by infinitesimal interchain coupling at the jumps between the small plateaus. We conclude that this antiferromagnetism is supported by the mixing of low-lying excited states by the staggered interchain mean field even though the spin correlation function is short ranged in the ground state of each chain.

  5. Origin of Hund's multiplicity rule in quasi-two-dimensional two-electron quantum dots

    SciTech Connect

    Sako, Tokuei; Paldus, Josef; Diercksen, Geerd H. F.

    2010-02-15

    The origin of Hund's multiplicity rules has been studied for a system of two electrons confined by a quasi-two-dimensional harmonic-oscillator potential by relying on a full configuration interaction wave function and Cartesian anisotropic Gaussian basis sets. In terms of appropriate normal-mode coordinates the wave function factors into a product of the center-of-mass and the internal components. The {sup 1{Pi}}{sub u} singlet state and the {sup 3{Pi}}{sub u} triplet state represent the energetically lowest pair of states to which Hund's multiplicity rule applies. They are shown to involve excitations into different degrees of freedom, namely, into the center-of-mass angular mode and the internal angular mode for the singlet and triplet states, respectively. The presence of an angular nodal line in the internal space allows then the triplet state to avoid the singularity in the electron-electron interaction potential, leading to the energy lowering of the triplet state relative to its counterpart singlet state.

  6. Evolution in Quantum Leaps: Multiple Combinatorial Transfers of HPI and Other Genetic Modules in Enterobacteriaceae

    PubMed Central

    Paauw, Armand; Leverstein-van Hall, Maurine A.; Verhoef, Jan; Fluit, Ad C.

    2010-01-01

    Horizontal gene transfer is a key step in the evolution of Enterobacteriaceae. By acquiring virulence determinants of foreign origin, commensals can evolve into pathogens. In Enterobacteriaceae, horizontal transfer of these virulence determinants is largely dependent on transfer by plasmids, phages, genomic islands (GIs) and genomic modules (GMs). The High Pathogenicity Island (HPI) is a GI encoding virulence genes that can be transferred between different Enterobacteriaceae. We investigated the HPI because it was present in an Enterobacter hormaechei outbreak strain (EHOS). Genome sequence analysis showed that the EHOS contained an integration site for mobile elements and harbored two GIs and three putative GMs, including a new variant of the HPI (HPI-ICEEh1). We demonstrate, for the first time, that combinatorial transfers of GIs and GMs between Enterobacter cloacae complex isolates must have occurred. Furthermore, the excision and circularization of several combinations of the GIs and GMs was demonstrated. Because of its flexibility, the multiple integration site of mobile DNA can be considered an integration hotspot (IHS) that increases the genomic plasticity of the bacterium. Multiple combinatorial transfers of diverse combinations of the HPI and other genomic elements among Enterobacteriaceae may accelerate the generation of new pathogenic strains. PMID:20084283

  7. Multiple logic functions from extended blockade region in a silicon quantum-dot transistor

    SciTech Connect

    Lee, Youngmin; Lee, Sejoon Im, Hyunsik; Hiramoto, Toshiro

    2015-02-14

    We demonstrate multiple logic-functions at room temperature on a unit device of the Si single electron transistor (SET). Owing to the formation of the multi-dot system, the device exhibits the enhanced Coulomb blockade characteristics (e.g., large peak-to-valley current ratio ∼200) that can improve the reliability of the SET-based logic circuits. The SET displays a unique feature useful for the logic applications; namely, the Coulomb oscillation peaks are systematically shifted by changing either of only the gate or the drain voltage. This enables the SET to act as a multi-functional one-transistor logic gate with AND, OR, NAND, and XOR functions.

  8. Handheld deep ultraviolet emission device based on aluminum nitride quantum wells and graphene nanoneedle field emitters.

    PubMed

    Matsumoto, Takahiro; Iwayama, Sho; Saito, Takao; Kawakami, Yasuyuki; Kubo, Fumio; Amano, Hiroshi

    2012-10-22

    We report the successful fabrication of a compact deep ultraviolet emission device via a marriage of AlGaN quantum wells and graphene nanoneedle field electron emitters. The device demonstrated a 20-mW deep ultraviolet output power and an approximately 4% power efficiency. The performance of this device may lead toward the realization of an environmentally friendly, convenient and practical deep ultraviolet light source.

  9. Single-shot single-voxel lactate measurements using FOCI-LASER and a multiple-quantum filter.

    PubMed

    Payne, Geoffrey S; deSouza, Nandita M; Messiou, Christina; Leach, Martin O

    2015-04-01

    Measurement of tissue lactate using (1) H MRS is often confounded by overlap with intense lipid signals at 1.3 ppm. Single-voxel localization using PRESS is also compromised by the large chemical shift displacement between voxels for the 4.1 ppm (-CH) resonance and the 1.3 ppm -CH3 resonance, leading to subvoxels with signals of opposite phase and hence partial signal cancellation. To reduce the chemical shift displacement to negligible proportions, a modified semi-LASER sequence was written ("FOCI-LASER", abbreviated as fLASER) using FOCI pulses to permit high RF bandwidth even with the limited RF amplitude characteristic of clinical MRI scanners. A further modification, MQF-fLASER, includes a selective multiple-quantum filter to detect lactate and reject lipid signals. The sequences were implemented on a Philips 3 T Achieva TX system. In a solution of brain metabolites fLASER lactate signals were 2.7 times those of PRESS. MQF-fLASER lactate was 47% of fLASER (the theoretical maximum is 50%) but still larger than PRESS lactate. In oil, the main 1.3 ppm lipid peak was suppressed to less than 1%. Enhanced suppression was possible using increased gradient durations. The minimum detectable lactate concentration was approximately 0.5 mM. Coherence selection gradients needed to be at the magic angle to avoid large water signals derived from intermolecular multiple-quantum coherences. In pilot patient measurements, lactate peaks were often observed in brain tumours, but not in cervix tumours; lipids were effectively suppressed. In summary, compared with PRESS, the fLASER sequence yields greatly superior sensitivity for direct detection of lactate (and equivalent sensitivity for other metabolites), while the single-voxel single-shot MQF-fLASER sequence surpasses PRESS for lactate detection while eliminating substantial signals from lipids. This sequence will increase the potential for in vivo lactate measurement as a biomarker in targeted anti-cancer treatments as well as

  10. Absorption enhancement through Fabry-Pérot resonant modes in a 430 nm thick InGaAs/GaAsP multiple quantum wells solar cell

    SciTech Connect

    Behaghel, B.; Tamaki, R.; Watanabe, K.; Sodabanlu, H.; Vandamme, N.; Dupuis, C.; Bardou, N.; Cattoni, A.; Okada, Y.; Sugiyama, M.; Collin, S.; Guillemoles, J.-F.

    2015-02-23

    We study light management in a 430 nm-thick GaAs p-i-n single junction solar cell with 10 pairs of InGaAs/GaAsP multiple quantum wells (MQWs). The epitaxial layer transfer on a gold mirror improves light absorption and increases the external quantum efficiency below GaAs bandgap by a factor of four through the excitation of Fabry-Perot resonances. We show a good agreement with optical simulation and achieve around 10% conversion efficiency. We demonstrate numerically that this promising result can be further improved by anti-reflection layers. This study paves the way to very thin MQWs solar cells.

  11. Absorption enhancement through Fabry-Pérot resonant modes in a 430 nm thick InGaAs/GaAsP multiple quantum wells solar cell

    NASA Astrophysics Data System (ADS)

    Behaghel, B.; Tamaki, R.; Vandamme, N.; Watanabe, K.; Dupuis, C.; Bardou, N.; Sodabanlu, H.; Cattoni, A.; Okada, Y.; Sugiyama, M.; Collin, S.; Guillemoles, J.-F.

    2015-02-01

    We study light management in a 430 nm-thick GaAs p-i-n single junction solar cell with 10 pairs of InGaAs/GaAsP multiple quantum wells (MQWs). The epitaxial layer transfer on a gold mirror improves light absorption and increases the external quantum efficiency below GaAs bandgap by a factor of four through the excitation of Fabry-Perot resonances. We show a good agreement with optical simulation and achieve around 10% conversion efficiency. We demonstrate numerically that this promising result can be further improved by anti-reflection layers. This study paves the way to very thin MQWs solar cells.

  12. The impact of quantum dots magnetization on spin separation and spin current in a multiple quantum-dot ring in the presence of Rashba spin-orbit coupling

    NASA Astrophysics Data System (ADS)

    Faizabadi, Edris; Eslami, Leila

    2012-06-01

    The influence of quantum dot magnetization on electronic spin-dependent transport is investigated through a triple-quantum-dot ring structure in which one of the quantum dots is non-magnetic subjected to the Rashba spin-orbit interaction and the two other ones possess magnetic structure. Evaluated results, based on single particle Green's function formalism, indicate that the presence of magnetic moment on the quantum dots leads to additional spin-dependent phase factor which affects electronic transport through the system. For both antiferromagnetic and ferromagnetic quantum dots, the system can operate as a spin-splitter but differently; by tuning Rashba spin-orbit strength and in the presence of magnetic flux, respectively. Besides, in the absence of one of the outgoing leads, spin current in the output is calculated and demonstrated that magnetization of quantum dots leads to spin current even in the absence of Rashba spin-orbit effect. Moreover, it is shown that in the presence of Rashba spin orbit interaction, magnetic quantum dots, and magnetic flux, the two terminal system produces a completely tunable spin current.

  13. Sub-250 nm light emission and optical gain in AlGaN materials

    NASA Astrophysics Data System (ADS)

    Francesco Pecora, Emanuele; Zhang, Wei; Nikiforov, A. Yu.; Yin, Jian; Paiella, Roberto; Dal Negro, Luca; Moustakas, Theodore D.

    2013-01-01

    We investigate the deep-UV optical emission and gain properties of AlxGa1-xN/AlyGa1-yN multiple quantum wells structures. These structures were grown by plasma-assisted molecular-beam epitaxy on 6H-SiC substrates, under a growth mode which promotes various degrees of band-structure potential fluctuations in the form of cluster-like features within the wells. The degree of inhomogeneities in these samples was determined by cathodoluminescence mapping. We measured the TE-polarized amplified spontaneous emission in the sample with cluster-like features and quantified the optical absorption/gain coefficients and gain spectra by the variable stripe length technique under ultrafast optical pumping. A maximum net modal gain of about 120 cm-1 is measured at 4.9 eV. On the other hand, we found that samples with homogeneous quantum wells lead to absorption. Numerical simulations are performed to support our experimental findings.

  14. Sub-250 nm light emission and optical gain in AlGaN materials

    SciTech Connect

    Francesco Pecora, Emanuele; Zhang Wei; Nikiforov, A. Yu.; Yin Jian; Paiella, Roberto; Dal Negro, Luca; Moustakas, Theodore D.

    2013-01-07

    We investigate the deep-UV optical emission and gain properties of Al{sub x}Ga{sub 1-x}N/Al{sub y}Ga{sub 1-y}N multiple quantum wells structures. These structures were grown by plasma-assisted molecular-beam epitaxy on 6H-SiC substrates, under a growth mode which promotes various degrees of band-structure potential fluctuations in the form of cluster-like features within the wells. The degree of inhomogeneities in these samples was determined by cathodoluminescence mapping. We measured the TE-polarized amplified spontaneous emission in the sample with cluster-like features and quantified the optical absorption/gain coefficients and gain spectra by the variable stripe length technique under ultrafast optical pumping. A maximum net modal gain of about 120 cm{sup -1} is measured at 4.9 eV. On the other hand, we found that samples with homogeneous quantum wells lead to absorption. Numerical simulations are performed to support our experimental findings.

  15. Quantum Darwinism

    NASA Astrophysics Data System (ADS)

    Zurek, Wojciech Hubert

    2009-03-01

    Quantum Darwinism describes the proliferation, in the environment, of multiple records of selected states of a quantum system. It explains how the quantum fragility of a state of a single quantum system can lead to the classical robustness of states in their correlated multitude; shows how effective `wave-packet collapse' arises as a result of the proliferation throughout the environment of imprints of the state of the system; and provides a framework for the derivation of Born's rule, which relates the probabilities of detecting states to their amplitudes. Taken together, these three advances mark considerable progress towards settling the quantum measurement problem.

  16. Design and Room-Temperature Operation of GaAs/AlGaAs Multiple Quantum Well Nanowire Lasers.

    PubMed

    Saxena, Dhruv; Jiang, Nian; Yuan, Xiaoming; Mokkapati, Sudha; Guo, Yanan; Tan, Hark Hoe; Jagadish, Chennupati

    2016-08-10

    We present the design and room-temperature lasing characteristics of single nanowires containing coaxial GaAs/AlGaAs multiple quantum well (MQW) active regions. The TE01 mode, which has a doughnut-shaped intensity profile and is polarized predominantly in-plane to the MQWs, is predicted to lase in these nanowire heterostructures and is thus chosen for the cavity design. Through gain and loss calculations, we determine the nanowire dimensions required to minimize loss for the TE01 mode and determine the optimal thickness and number of QWs for minimizing the threshold sheet carrier density. In particular, we show that there is a limit to the minimum and maximum number of QWs that are required for room-temperature lasing. Based on our design, we grew nanowires of a suitable diameter containing eight uniform coaxial GaAs/AlGaAs MQWs. Lasing was observed at room temperature from optically pumped single nanowires and was verified to be from TE01 mode by polarization measurements. The GaAs MQW nanowire lasers have a threshold fluence that is a factor of 2 lower than that previously demonstrated for room-temperature GaAs nanowire lasers.

  17. Passivation of multiple-quantum-well Ge0.97Sn0.03/Ge p-i-n photodetectors

    NASA Astrophysics Data System (ADS)

    Morea, Matthew; Brendel, Corinna E.; Zang, Kai; Suh, Junkyo; Fenrich, Colleen S.; Huang, Yi-Chiau; Chung, Hua; Huo, Yijie; Kamins, Theodore I.; Saraswat, Krishna C.; Harris, James S.

    2017-02-01

    We study the effect of surface passivation on pseudomorphic multiple-quantum-well Ge0.97Sn0.03/Ge p-i-n photodetectors. A combination of ozone oxidation to form GeOx and GeSnOx on the surface of the diodes followed by atomic layer deposition of Al2O3 for protection of these native oxides provides reduced dark current. With a temperature-dependent investigation of dark current, we calculate the activation energy to be 0.26 eV at a bias of -0.1 V and 0.05 eV at -1 V for the sample passivated by this ozone method. Based on these activation energy results, we find that the current is less dominated by bulk tunneling at lower reverse bias values; hence, the effect of surface passivation is more noticeable with nearly an order-of-magnitude improvement in dark current for the ozone-passivated sample compared to control devices without the ozone treatment at a voltage of -0.1 V. Passivation also results in a significant enhancement of the responsivity, particularly for shorter wavelengths, with 26% higher responsivity at 1100 nm and 16% higher performance at 1300 nm.

  18. Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling

    NASA Astrophysics Data System (ADS)

    Wendav, T.; Fischer, I. A.; Virgilio, M.; Capellini, G.; Oliveira, F.; Cerqueira, M. F.; Benedetti, A.; Chiussi, S.; Zaumseil, P.; Schwartz, B.; Busch, K.; Schulze, J.

    2016-12-01

    Employing a low-temperature growth mode, we fabricated ultrathin S i1 -xG ex /Si multiple quantum well structures with a well thickness of less than 1.5 nm and a Ge concentration above 60% directly on a Si substrate. We identified an unusual temperature-dependent blueshift of the photoluminescence (PL) and exceptionally low thermal quenching. We find that this behavior is related to the relative intensities of the no-phonon (NP) peak and a phonon-assisted replica that are the main contributors to the total PL signal. To investigate these aspects in more detail, we developed a strategy to calculate the PL spectrum employing a self-consistent multivalley effective mass model, in combination with second-order perturbation theory. Through our investigation, we find that while the phonon-assisted feature decreases with temperature, the NP feature shows a strong increase in the recombination rate. Besides leading to the observed robustness against thermal quenching, this causes the observed blueshift of the total PL signal.

  19. Hydration free energies using semiempirical quantum mechanical Hamiltonians and a continuum solvent model with multiple atomic-type parameters.

    PubMed

    Anisimov, Victor M; Cavasotto, Claudio N

    2011-06-23

    To build the foundation for accurate quantum mechanical (QM) simulation of biomacromolecules in an aqueous environment, we undertook the optimization of the COnductor-like Screening MOdel (COSMO) atomic radii and atomic surface tension coefficients for different semiempirical Hamiltonians adhering to the same computational conditions recently followed in the simulation of biomolecular systems. This optimization was achieved by reproducing experimental hydration free energies of a set consisting of 507 neutral and 99 ionic molecules. The calculated hydration free energies were significantly improved by introducing a multiple atomic-type scheme that reflects different chemical environments. The nonpolar contribution was treated according to the scaled particle Claverie-Pierotti formalism. Separate radii and surface tension coefficient sets have been developed for AM1, PM3, PM5, and RM1 semiempirical Hamiltonians, with an average unsigned error for neutral molecules of 0.64, 0.66, 0.73, and 0.71 kcal/mol, respectively. Free energy calculation of each molecule took on average 0.5 s on a single processor. The new sets of parameters will enhance the quality of semiempirical QM calculations using COSMO in biomolecular systems. Overall, these results further extend the utility of QM methods to chemical and biological systems in the condensed phase.

  20. Fabrication of Very High Efficiency 5.8 GHz Power Amplifiers using AlGaN HFETs on SiC Substrates for Wireless Power Transmission

    NASA Technical Reports Server (NTRS)

    Sullivan, Gerry

    2001-01-01

    For wireless power transmission using microwave energy, very efficient conversion of the DC power into microwave power is extremely important. Class E amplifiers have the attractive feature that they can, in theory, be 100% efficient at converting, DC power to RF power. Aluminum gallium nitride (AlGaN) semiconductor material has many advantageous properties, relative to silicon (Si), gallium arsenide (GaAs), and silicon carbide (SiC), such as a much larger bandgap, and the ability to form AlGaN/GaN heterojunctions. The large bandgap of AlGaN also allows for device operation at higher temperatures than could be tolerated by a smaller bandgap transistor. This could reduce the cooling requirements. While it is unlikely that the AlGaN transistors in a 5.8 GHz class E amplifier can operate efficiently at temperatures in excess of 300 or 400 C, AlGaN based amplifiers could operate at temperatures that are higher than a GaAs or Si based amplifier could tolerate. Under this program, AlGaN microwave power HFETs have been fabricated and characterized. Hybrid class E amplifiers were designed and modeled. Unfortunately, within the time frame of this program, good quality HFETs were not available from either the RSC laboratories or commercially, and so the class E amplifiers were not constructed.

  1. In vivo single-shot three-dimensionally localized multiple quantum spectroscopy of GABA in the human brain with improved spectral selectivity

    NASA Astrophysics Data System (ADS)

    Choi, In-Young; Lee, Sang-Pil; Shen, Jun

    2005-01-01

    A single-shot multiple quantum filtering method is developed that uses two double-band frequency selective pulses for enhanced spectral selectivity in combination with a slice-selective 90°, a slice-selective universal rotator 90°, and a spectral-spatial pulse composed of two slice-selective universal rotator 45° pulses for single-shot three-dimensional localization. The use of this selective multiple quantum filtering method for C3 and C4 methylene protons of GABA resulted in improved spectral selectivity for GABA and effective suppression of overlapping signals such as creatine and glutathione in each single scan, providing reliable measurements of the GABA doublet in all subjects. The concentration of GABA was measured to be 0.7 ± 0.2 μmol/g (means ± SD, n = 15) in the fronto-parietal region of the human brain in vivo.

  2. Accurate molecular dynamics and nuclear quantum effects at low cost by multiple steps in real and imaginary time: Using density functional theory to accelerate wavefunction methods

    NASA Astrophysics Data System (ADS)

    Kapil, V.; VandeVondele, J.; Ceriotti, M.

    2016-02-01

    The development and implementation of increasingly accurate methods for electronic structure calculations mean that, for many atomistic simulation problems, treating light nuclei as classical particles is now one of the most serious approximations. Even though recent developments have significantly reduced the overhead for modeling the quantum nature of the nuclei, the cost is still prohibitive when combined with advanced electronic structure methods. Here we present how multiple time step integrators can be combined with ring-polymer contraction techniques (effectively, multiple time stepping in imaginary time) to reduce virtually to zero the overhead of modelling nuclear quantum effects, while describing inter-atomic forces at high levels of electronic structure theory. This is demonstrated for a combination of MP2 and semi-local DFT applied to the Zundel cation. The approach can be seamlessly combined with other methods to reduce the computational cost of path integral calculations, such as high-order factorizations of the Boltzmann operator or generalized Langevin equation thermostats.

  3. Accurate molecular dynamics and nuclear quantum effects at low cost by multiple steps in real and imaginary time: Using density functional theory to accelerate wavefunction methods

    SciTech Connect

    Kapil, V.; Ceriotti, M.; VandeVondele, J.

    2016-02-07

    The development and implementation of increasingly accurate methods for electronic structure calculations mean that, for many atomistic simulation problems, treating light nuclei as classical particles is now one of the most serious approximations. Even though recent developments have significantly reduced the overhead for modeling the quantum nature of the nuclei, the cost is still prohibitive when combined with advanced electronic structure methods. Here we present how multiple time step integrators can be combined with ring-polymer contraction techniques (effectively, multiple time stepping in imaginary time) to reduce virtually to zero the overhead of modelling nuclear quantum effects, while describing inter-atomic forces at high levels of electronic structure theory. This is demonstrated for a combination of MP2 and semi-local DFT applied to the Zundel cation. The approach can be seamlessly combined with other methods to reduce the computational cost of path integral calculations, such as high-order factorizations of the Boltzmann operator or generalized Langevin equation thermostats.

  4. High-resolution 2D NMR spectra in inhomogeneous fields based on intermolecular multiple-quantum coherences with efficient acquisition schemes

    NASA Astrophysics Data System (ADS)

    Lin, Meijin; Huang, Yuqing; Chen, Xi; Cai, Shuhui; Chen, Zhong

    2011-01-01

    High-resolution 2D NMR spectra in inhomogeneous fields can be achieved by the use of intermolecular multiple-quantum coherences and shearing reconstruction of 3D data. However, the long acquisition time of 3D spectral data is generally unbearable for invivo applications. To overcome this problem, two pulse sequences dubbed as iDH-COSY and iDH-JRES were proposed in this paper. Although 3D acquisition is still required for the new sequences, the high-resolution 2D spectra can be obtained with a relatively short scanning time utilizing the manipulation of indirect evolution period and sparse sampling. The intermolecular multiple-quantum coherence treatment combined with the raising and lowering operators was applied to derive analytical signal expressions for the new sequences. And the experimental observations agree with the theoretical predictions. Our results show that the new sequences possess bright perspective in the applications on invivo localized NMR spectroscopy.

  5. Study of the Linewidths of Excitonic Luminescence Transitions in AlGaN Alloys

    NASA Astrophysics Data System (ADS)

    Bajaj, K. K.; Coli, Giuliano; Li, J.; Lin, Jingyu; Jiang, H. X.

    2001-03-01

    We have investigated the linewidth of excitonic photoluminescence transitions at 10 K and as a function of Al concentration in AlGaN alloys grown by low-pressure metal organic chemical vapor deposition on (0001) oriented sapphire substrates, with low-temperature GaN buffer layers. Al composition ranged from 0 to 35 percent. By means of a lineshape analysis of the excitonic transition we identify the contribution of the compositional disorder in the alloy to the excitonic linewidth and find that the values of the excitonic linewidths in our samples are considerably smaller than those reported recently[1]. These values of the excitonic linewidths, as expected, increase as a function of Al concentration and agree very well with those calculated by a model presented by Lee and Bajaj[2]. [1] G. Steude, B.K. Meyer, A. Göldner, A. Hoffmann, F. Bertram, J.Christen, H. Amano and I. Akasaki, Appl. Phys. Lett 74, 2456 (1999) [2] S. M. Lee and K. K. Bajaj, J. Appl. Phys. 73, 1788 (1993)

  6. AlGaN channel field effect transistors with graded heterostructure ohmic contacts

    NASA Astrophysics Data System (ADS)

    Bajaj, Sanyam; Akyol, Fatih; Krishnamoorthy, Sriram; Zhang, Yuewei; Rajan, Siddharth

    2016-09-01

    We report on ultra-wide bandgap (UWBG) Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistors (MISFETs) with heterostructure engineered low-resistance ohmic contacts. The low intrinsic electron affinity of AlN (0.6 eV) leads to large Schottky barriers at the metal-AlGaN interface, resulting in highly resistive ohmic contacts. In this work, we use a reverse compositional graded n++ AlGaN contact layer to achieve upward electron affinity grading, leading to a low specific contact resistance (ρsp) of 1.9 × 10-6 Ω cm2 to n-Al0.75Ga0.25N channels (bandgap ˜5.3 eV) with non-alloyed contacts. We also demonstrate UWBG Al0.75Ga0.25N channel MISFET device operation employing the compositional graded n++ ohmic contact layer and 20 nm atomic layer deposited Al2O3 as the gate-dielectric.

  7. Band lineup in GaAs(1-x)Sbx/GaAs strained-layer multiple quantum wells grown by molecular-beam epitaxy

    NASA Technical Reports Server (NTRS)

    Ji, G.; Agarwala, S.; Huang, D.; Chyi, J.; Morkoc, H.

    1988-01-01

    GaAs(1-x)Sbx/GaAs strained-layer multiple quantum wells have been grown by molecular-beam epitaxy and characterized by room-temperature photoreflectance (PR). The PR spectra denote that high-quality layers can be grown in the GaAs(1-x)Sbx/GaAs system. The method for determining the band offset Q(vh) is discussed in this strained-layer system.

  8. Effects of tensile stress induced by silicon nitride passivation on electrical characteristics of AlGaN /GaN heterostructure field-effect transistors

    NASA Astrophysics Data System (ADS)

    Jeon, Chang Min; Lee, Jong-Lam

    2005-04-01

    The effects of tensile stress induced by silicon nitride (Si3N4) passivation on electrical characteristics of AlGaN /GaN heterostructure field-effect transistors (HFETs) were investigated. The biaxial tensile stress applied to the AlGaN layer was increased with the thickness of the Si3N4 passivation layer, leading to the increase of sheet charge density confined at the heterointerface. The stress-induced charge density was 1.75×1011e/cm2 for 80-nm-thick Si3N4 and 6.74×1011e/cm2 for 500-nm-thick Si3N4. The maximum drain current and transconductance of AlGaN /GaN HFET increased from 769 to 858mA/mm and from 146 to 155mS/mm after passivation, respectively.

  9. Improved color rendering of phosphor-converted white light-emitting diodes with dual-blue active layers and n-type AlGaN layer.

    PubMed

    Yan, Qi-Rong; Zhang, Yong; Li, Shu-Ti; Yan, Qi-Ang; Shi, Pei-Pei; Niu, Qiao-Li; He, Miao; Li, Guo-Ping; Li, Jun-Rui

    2012-05-01

    An InGaN/GaN blue light-emitting diode (LED) structure and an InGaN/GaN blue-violet LED structure were grown sequentially on the same sapphire substrate by metal-organic chemical vapor deposition. It was found that the insertion of an n-type AlGaN layer below the dual blue-emitting active layers showed better spectral stability at the different driving current relative to the traditional p-type AlGaN electron-blocking layer. In addition, color rendering index of a Y3Al5O12:Ce3+ phosphor-converted white LED based on a dual blue-emitting chip with n-type AlGaN reached 91 at 20 mA, and Commission Internationale de L'Eclairage coordinates almost remained at the same point from 5 to 60 mA.

  10. Vertical transport through AlGaN barriers in heterostructures grown by ammonia molecular beam epitaxy and metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Browne, David A.; Fireman, Micha N.; Mazumder, Baishakhi; Kuritzky, Leah Y.; Wu, Yuh-Renn; Speck, James S.

    2017-02-01

    The results of vertical transport through AlGaN heterobarriers are presented for ammonia molecular beam epitaxy (NH3-MBE) on c-plane GaN on sapphire templates and on m-plane bulk GaN substrates, as well as by metalorganic chemical vapor deposition (MOCVD) on m-plane bulk GaN substrates. Experiments were performed to determine the role of the AlGaN alloy as an effective barrier to vertical transport, which is an essential component of both optoelectronic and power electronic devices. The alloy composition, thickness, and doping levels of the AlGaN layers, as well as substrate orientation, were systematically varied to examine their influence on electron transport. Atom probe tomography (APT) was used to directly determine the alloy composition at the atomic scale to reveal the presence of random alloy fluctuations which provides insight into the nature of the observed transport.

  11. N-polar III-nitride quantum well light-emitting diodes with polarization-induced doping

    SciTech Connect

    Verma, Jai; Simon, John; Protasenko, Vladimir; Kosel, Thomas; Xing, Huili Grace; Jena, Debdeep

    2011-10-24

    Nitrogen-polar III-nitride heterostructures present unexplored advantages over Ga(metal)-polar crystals for optoelectronic devices. This work reports N-polar III-nitride quantum-well ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy that integrate polarization-induced p-type doping by compositional grading from GaN to AlGaN along N-face. The graded AlGaN layer simultaneously acts as an electron blocking layer while facilitating smooth injection of holes into the active region, while the built-in electric field in the barriers improves carrier injection into quantum wells. The enhanced doping, carrier injection, and light extraction indicate that N-polar structures have the potential to exceed the performance of metal-polar ultraviolet light-emitting diodes.

  12. Effects of Si-doping on structural, electrical, and optical properties of polar and non-polar AlGaN epi-layers

    NASA Astrophysics Data System (ADS)

    Yang, Hongquan; Zhang, Xiong; Wang, Shuchang; Wang, Yi; Luan, Huakai; Dai, Qian; Wu, Zili; Zhao, Jianguo; Cui, Yiping

    2016-08-01

    The polar (0001)-oriented c-plane and non-polar (11 2 bar 0) -oriented a-plane wurtzite AlGaN epi-layers were successfully grown on polar (0001)-oriented c-plane and semi-polar (1 1 bar 02) -oriented r-plane sapphire substrates, respectively with various Si-doping levels in a low pressure metal organic chemical vapor deposition (MOCVD) system. The morphological, structural, electrical, and optical properties of the polar and non-polar AlGaN epi-layers were studied with scanning electron microscopy (SEM), X-ray diffraction (XRD), Hall effect, and Raman spectroscopy. The characterization results show that Si dopants incorporated into the polar and non-polar AlGaN films induced a relaxation of compressive residual strain and a generation of biaxial tensile strain on the surface in consequence of the dislocation climbing. In particular, it was found that the Si-induced compressive strain relaxation in the non-polar AlGaN samples can be promoted by the structural anisotropy as compared with the polar counterparts. The gradually increased relaxation of compressive residual strain in both polar and non-polar AlGaN samples with increasing Si-doping level was attributed to the Si-induced enhancement in the opportunity for the dislocations to interact and annihilate. This implies that the crystal quality for both polar and non-polar AlGaN epi-layers can be remarkably improved by Si-doping.

  13. Investigation of network heterogeneities in filled, trimodal, highly functional PDMS networks by 1H Multiple Quantum NMR

    SciTech Connect

    Gjersing, E; Chinn, S; Maxwell, R S; Herberg, J; Eastwood, E; Bowen, D; Stephens, T

    2006-09-06

    The segmental order and dynamics of polymer network chains in a filled, tri-modal silicone network have been studied by static 1H Multiple Quantum (MQ) NMR methods to gain insight into the structure property relationships. The materials were synthesized with two different types of crosslinks, with functionalities of 4 and near 60. The network chains were composed of distributions of high, low, and medium molecular weight chains. Crosslinking was accomplished by standard acid catalyzed reactions. MQ NMR methods have detected domains with residual dipolar couplings (<{Omega}{sub d}>) of near 4 kRad/s and 1 kRad/s assigned to (a) the shorter polymer chains and chains near the multifunctional ({phi}=60) crosslinking sites and to (b) the longer polymer chains far from these sites. Three structural variables were systematically varied and the mechanical properties and distributions of residual dipolar couplings measured in order to gain insight in to the network structural motifs that contribute significantly to the composite properties. The partitioning of and the average values of the residual dipolar couplings for the two domains were observed to be dependent on formulation variable and provided increased insight into the mechanical properties of these materials which are unavailable from swelling and spin-echo methods. The results of this study suggest that the domains with high crosslink density contribute significantly to the high strain modulus, while the low crosslink density domains do not. This is in agreement with theories and experimental studies on silicone bimodal networks over the last 20 years. In-situ MQ-NMR of swollen sample suggests that the networks deform non-affinely, in agreement with theory. The NMR experiments shown here provide increased ability to characterize multimodal networks of typical engineering silicone materials and to gain significant insight into structure-property relationships.

  14. Investigation of network heterogeneities in filled, trimodal, highly functional PDMS networks by 1H Multiple Quantum NMR

    SciTech Connect

    Maxwell, R; Gjersing, E; Chinn, S; Giuliani, J; Herberg, J; Eastwood, E; Bowen, D; Stephens, T

    2007-03-20

    The segmental order and dynamics of polymer network chains in a filled, tri-modal silicone foam network have been studied by static 1H Multiple Quantum (MQ) NMR methods to gain insight into the structure property relationships. The foam materials were synthesized with two different types of crosslinks, with functionalities, {phi}, of 4 and near 60. The network chains were composed of distributions of high, low, and medium molecular weight chains. Crosslinking was accomplished by standard acid catalyzed reactions. MQ NMR methods have detected domains with residual dipolar couplings (<{Omega}{sub d}>) of near 4 kRad/s and 1 kRad/s assigned to (a) the shorter polymer chains and chains near the multifunctional (f=60) crosslinking sites and to (b) the longer polymer chains far from these sites. Three structural variables were systematically varied and the mechanical properties via compression and distributions of residual dipolar couplings measured in order to gain insight in to the network structural motifs that contribute significantly to the composite properties. The partitioning of and the average values of the residual dipolar couplings for the two domains were observed to be dependent on formulation variable and provided increased insight into the network structure of these materials which are unavailable from swelling and spin-echo methods. The results of this study suggest that the domains with high crosslink density contribute significantly to the high strain modulus, while the low crosslink density domains do not. This is in agreement with theories and experimental studies on silicone bimodal networks over the last 20 years. In-situ MQ-NMR of swollen sample suggests that the networks deform heterogeneously and non-affinely. The heterogeneity of the deformation process was observed to depend on the amount of the high functionality crosslinking site PMHS. The NMR experiments shown here provide increased ability to characterize multimodal networks of typical

  15. Highly efficient blue organic light-emitting diodes using quantum well-like multiple emissive layer structure

    NASA Astrophysics Data System (ADS)

    Yoon, Ju-An; Kim, You-Hyun; Kim, Nam Ho; Yoo, Seung Il; Lee, Sang Youn; Zhu, Fu Rong; Kim, Woo Young

    2014-04-01

    In this study, the properties of blue organic light-emitting diodes (OLEDs), employing quantum well-like structure (QWS) that includes four different blue emissive materials of 4,4'-bis(2,2'-diphenylyinyl)-1,1'-biphenyl (DPVBi), 9,10-di(naphth-2-yl)anthracene (ADN), 2-( N, N-diphenyl-amino)-6-[4-( N, N-diphenyl amine)styryl]naphthalene (DPASN), and bis(2-methyl-8-quinolinolate)-4-(phenyl phenolato) aluminum (BAlq), were investigated. Conventional QWS blue OLEDs composed of multiple emissive layers and charge blocking layer with lower highest occupied molecular orbital (HOMO)-lowest unoccupied molecular orbital (LUMO) energy level, and devices with triple emissive layers for more significant hole-electron recombination and a wider region for exciton generation were designed. The properties of triple emissive layered blue OLEDs with the structure of indium tin oxide (ITO) / N, N'-diphenyl- N, N'-bis(1-naphthyl-phenyl)-(1,1'-biphenyl)-4,4'-diamine (NPB) (700 Ǻ)/X (100 Ǻ)/BAlq (100 Ǻ)/X (100 Ǻ)/4,7-diphenyl-1,10-phenanthroline (Bphen) (300 Ǻ)/lithium quinolate (Liq) (20 Ǻ)/aluminum (Al) (1,200 Ǻ) (X = DPVBi, ADN, DPASN) were examined. HOMO-LUMO energy levels of DPVBi, ADN, DPASN, and BAlq are 2.8 to 5.9, 2.6 to 5.6, 2.3 to 5.2, and 2.9 to 5.9 eV, respectively. The OLEDs with DPASN/BAlq/DPASN QWS with maximum luminous efficiency of 5.32 cd/A was achieved at 3.5 V.

  16. Radiation induced crosslinking in a silica-filled silicone elastomer as investigated by multiple quantum H NMR

    SciTech Connect

    Maxwell, R S; Chinn, S C; Solyom, D; Cohenour, R

    2005-05-24

    DC745 is a commercially available silicone elastomer consisting of dimethyl, methylphenyl, and vinyl-methyl siloxane monomers crosslinked with a peroxide vinyl specific curing agent. It is generally considered to age gracefully and to be resistant to chemical and thermally harsh environments. However, little data exists on the radiation resistance of this commonly used silicone elastomer. We report static {sup 1}H NMR studies of residual dipolar couplings in DC745 solid elastomers subject to exposure to ionizing gamma radiation. {sup 1}H spin-echo NMR data shows that with increasing dose, the segmental dynamics decrease is consistent with radiatively induced crosslinking. {sup 1}H multiple quantum NMR was used to assess changes in the network structure and observed the presence of a bimodal distribution of residual dipolar couplings, <{Omega}{sub d}>, that were dose dependent. The domain with the lower <{Omega}{sub d}> has been assigned to the polymer network while the domain with the higher <{Omega}{sub d}> has been assigned to polymer chains interacting with the inorganic filler surfaces. In samples exposed to radiation, the residual dipolar couplings in both reservoirs were observed to increase and the populations were observed to be dose dependent. The NMR results are compared to Differential Scanning Calorimetry (DSC) and a two-step solvent swelling technique. The solvent swelling data lend support to the interpretation of the NMR results and the DSC data show both a decrease in the melt temperature and the heat of fusion with cumulative dose, consistent with radiative crosslinking. In addition, DSC thermograms obtained following a 3 hr isothermal soak at -40 C showed the presence of a second melt feature at T{sub m} {approx} -70 C consistent with a network domain with significantly reduced segmental motion.

  17. Enhanced output power of GaN-based LEDs with embedded AlGaN pyramidal shells.

    PubMed

    Tu, Shang-Ju; Sheu, Jinn-Kong; Lee, Ming-Lun; Yang, Chih-Ciao; Chang, Kuo-Hua; Yeh, Yu-Hsiang; Huang, Feng-Wen; Lai, Wei-Chih

    2011-06-20

    In this article, the characteristics of GaN-based LEDs grown on Ar-implanted GaN templates to form inverted Al0.27Ga0.83N pyramidal shells beneath an active layer were investigated. GaN-based epitaxial layers grown on the selective Ar-implanted regions had lower growth rates compared with those grown on the implantation-free regions. This resulted in selective growth, and formation of V-shaped concaves in the epitaxial layers. Accordingly, the inverted Al0.27Ga0.83N pyramidal shells were formed after the Al0.27Ga0.83N and GaN layers were subsequently grown on the V-shaped concaves. The experimental results indicate that the light-output power of LEDs with inverted AlGaN pyramidal shells was higher than those of conventional LEDs. With a 20 mA current injection, the output power was enhanced by 10% when the LEDs were embedded with inverted Al0.27Ga0.83N pyramidal shells. The enhancement in output power was primarily due to the light scattering at the Al0.27Ga0.83N/GaN interface, which leads to a higher escape probability for the photons, that is, light-extraction efficiency. Based on the ray tracing simulation, the output power of LEDs grown on Ar-implanted GaN templates can be enhanced by over 20% compared with the LEDs without the embedded AlGaN pyramidal shells, if the AlGaN layers were replaced by Al0.5Ga0.5N layers.

  18. Growth and Optical Properties of Al rich AlN/AlGaN Quantum Wells

    NASA Astrophysics Data System (ADS)

    Tahtamouni, T. M. Al; Nepal, N.; Nakarmi, M. L.; Lin, J. Y.; Jiang, H. X.

    2006-03-01

    Al rich AlGaN alloys are promising materials for the applications in the optoelectronic devices such as deep ultraviolet (UV) emitters and detectors in the spectral range down to 200 nm. AlGaN based UV emitters (λ<340nm) has applications in bio-chemical agent detection and medical research/ health care. To realize deep UV emission (λ< 280 nm) Al rich AlGaN based quantum wells (QWs) are required. We report here the growth of AlN/AlxGa1-xNQWs (x>0.65) on AlN/sapphire templates by metalorganic chemical vapor deposition (MOCVD). Deep UV photoluminescence (PL) was employed to study the optical properties of the QWs. Well width (Al composition) dependence was studied by varying the QW thickness (Al composition) with fixed x ˜ 0.65 (well width at 3 nm). Optical properties of these QWs such as the effects of alloy fluctuation, temperature, strain and piezoelectric field, carrier and exciton localizations on the quantum efficiency have been studied. Carrier and exciton dynamics were probed. Implications of our findings on the applications of Al rich AlN/AlGaN QWs for UV emitters and detectors will also be discussed.

  19. Modelling of GaAsP/InGaAs/GaAs strain-balanced multiple-quantum well solar cells

    NASA Astrophysics Data System (ADS)

    Cabrera, C. I.; Rimada, J. C.; Connolly, J. P.; Hernandez, L.

    2013-01-01

    A model of strain balanced quantum well solar cells is presented, together with a high efficiency design for a GaAsP/InGaAs/GaAs device. The effect of tensile and compressive strain on bandstructure is considered in order to compute the electron and hole dispersion relation E(k ) in conduction and valence bands. The optical transitions in quantum well and barrier are evaluated and the quantum efficiency, dark current and the photocurrent calculated. Experimental data quantum efficiency and dark current are compared with theoretical calculations in the presence of strain, showing a good agreement. The resulting model is initially applied to a GaAsP/InGaAs/GaAs solar cell and the structure optimised to yield the greatest output power. The model is also applied to the problem of determining the highest efficiencies achievable for quantum well solar cells as a function of strain and confirms the high efficiency potential of strained quantum well solar cells.

  20. Effects of multiple organic ligands on size uniformity and optical properties of ZnSe quantum dots

    SciTech Connect

    Archana, J.; Navaneethan, M.; Hayakawa, Y.; Ponnusamy, S.; Muthamizhchelvan, C.

    2012-08-15

    Highlights: ► Highly monodispersed ZnSe quantum dots have been synthesized by wet chemical route. ► Strong quantum confinement effect have been observed in ∼ 4 nm ZnSe quantum dots. ► Enhanced ultraviolet near band emission have been obtained using long chain polymer. -- Abstract: The effects of multi-ligands on the formation and optical transitions of ZnSe quantum dots have been investigated. The dots are synthesized using 3-mercapto-1,2-propanediol and polyvinylpyrrolidone ligands, and have been characterized by X-ray diffraction, transmission electron microscopy (TEM), UV–visible absorption spectroscopy, photoluminescence spectroscopy, and Fourier transform infrared spectroscopy. TEM reveals high monodispersion with an average size of 4 nm. Polymer-stabilized, organic ligand-passivated ZnSe quantum dots exhibit strong UV emission at 326 nm and strong quantum confinement in the UV–visible absorption spectrum. Uniform size and suppressed surface trap emission are observed when the polymer ligand is used. The possible growth mechanism is discussed.

  1. Effect of variations in the doping profiles on the properties of doped multiple quantum well avalanche photodiodes

    NASA Technical Reports Server (NTRS)

    Menkara, H. M.; Wagner, B. K.; Summers, C. J.

    1996-01-01

    The purpose of this study is to use both theoretical and experimental evidence to determine the impact of doping imbalance and symmetry on the physical and electrical characteristics of doped multiple quantum well avalanche photodiodes (APD). Theoretical models have been developed to calculate the electric field valence and conduction bands, capacitance-voltage (CV), and carrier concentration versus depletion depth profiles. The models showed a strong correlation between the p- and n-doping balance inside the GaAs wells and the number of depleted stages and breakdown voltage of the APD. A periodic doping imbalance in the wells has been shown to result in a gradual increase (or decrease) in the electric field profile throughout the device which gave rise to partially depleted devices at low bias. The MQW APD structures that we modeled consisted of a 1 micron top p(+)-doped (3 x 10(exp 18) cm(exp -3)) GaAs layer followed by a 1 micron region of alternating layers of GaAs (500 A) and Al(0.42)Ga(0.58)As (500 A), and a 1 micron n(+) back layer (3 x 10(exp 18) cm(exp -3)). The GaAs wells were doped with p-i-n layers placed at the center of each well. The simulation results showed that in an APD with nine doped wells, and where the 50 A p-doped layer is off by 10% (p = 1.65 x 10(exp 18) cm(exp -3), n = 1.5 x 10(exp 18) cm(exp -3)), almost half of the MQW stages were shown to be undepleted at low bias which was a result of a reduction in the electric field near the p(+) cap layer by over 50% from its value in the balanced structure. Experimental CV and IV data on similar MBE grown MQW structures have shown very similar depletion and breakdown characteristics. The models have enabled us to better interpret our experimental data and to determine both the extent of the doping imbalances in the devices as well as the overall p- or n-type doping characteristics of the structures.

  2. Effects of non-exciton components excited by broadband pulses on quantum beats in a GaAs/AlAs multiple quantum well

    PubMed Central

    Kojima, Osamu; Iwasaki, Yuki; Kita, Takashi; Akahane, Kouichi

    2017-01-01

    In this study, we report the effect of the excitation of non-exciton components caused by broadband pulses on quantum beat oscillation. Using a spectrally controlled pump pulse, a long-lived oscillation is clearly observed, and the pump-power dependence shows the suppression of the dephasing rate of the oscillation. Our results from incoherent carrier generation using a continuous wave laser demonstrate that the non-exciton components behaving as free carriers increase the oscillation dephasing rate. PMID:28128344

  3. Temporally and spatially resolved photoluminescence investigation of (112{sup ¯}2) semi-polar InGaN/GaN multiple quantum wells grown on nanorod templates

    SciTech Connect

    Liu, B.; Smith, R.; Athanasiou, M.; Yu, X.; Bai, J.; Wang, T.

    2014-12-29

    By means of time-resolved photoluminescence (PL) and confocal PL measurements, temporally and spatially resolved optical properties have been investigated on a number of In{sub x}Ga{sub 1−x}N/GaN multiple-quantum-well (MQW) structures with a wide range of indium content alloys from 13% to 35% on (112{sup ¯}2) semi-polar GaN with high crystal quality, obtained through overgrowth on nanorod templates. With increasing indium content, the radiative recombination lifetime initially increases as expected, but decreases if the indium content further increases to 35%, corresponding to emission in the green spectral region. The reduced radiative recombination lifetime leads to enhanced optical performance for the high indium content MQWs as a result of strong exciton localization, which is different from the behaviour of c-plane InGaN/GaN MQWs, where quantum confined Stark effect plays a dominating role in emission process.

  4. AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas

    NASA Astrophysics Data System (ADS)

    Gautier, S.; Aggerstam, T.; Pinos, A.; Marcinkevičius, S.; Liu, K.; Shur, M.; O'Malley, S. M.; Sirenko, A. A.; Djebbour, Z.; Migan-Dubois, A.; Moudakir, T.; Ougazzaden, A.

    2008-11-01

    Al xGa 1-xN/AlN multiple quantum wells (MQWs) structures were grown by metalorganic vapour phase epitaxy (MOVPE) on pseudo AlN substrates using nitrogen as a carrier gas. Results of X-ray diffraction (XRD) and reciprocal space mapping (RSM) indicated no sign of strain relaxation in the quantum wells with respect to the AlN substrate. The MQW parameters such as thicknesses, growth rates and material compositions were extracted from XRD measurements and demonstrated an agreement with our growth conditions. No indication of parasitic reactions between ammonia and trimethyl-aluminium (TMAl) was detected in our growth process. Optical measurements revealed well-defined photoluminescence peaks at 288 and 280 nm, which are in a good agreement with the transmission experimental data. The piezo-electric field value in the studied structures was estimated to be 900 kV/cm.

  5. Optical properties and carrier dynamics of GaAs/GaInAs multiple-quantum-well shell grown on GaAs nanowire by molecular beam epitaxy

    SciTech Connect

    Park, Kwangwook; Ravindran, Sooraj; Ju, Gun Wu; Min, Jung-Wook; Kang, Seokjin; Myoung, NoSoung; Yim, Sang-Youp; Jo, Yong-Ryun; Kim, Bong-Joong; Lee, Yong Tak

    2016-12-01

    GaAs/GaInAs multiple-quantum-well (MQW) shells having different GaInAs shell width formed on the surface of self-catalyzed GaAs core nanowires (NWs) are grown on (100) Si substrate using molecular beam epitaxy. The photoluminescence emission from GaAs/GaInAs MQW shells and the carrier lifetime could be varied by changing the width of GaInAs shell. Time-resolved photoluminescence measurements showed that the carrier lifetime had a fast and slow decay owing to the mixing of wurtzite and zinc-blende structures of the NWs. Furthermore, strain relaxation caused the carrier lifetime to decrease beyond a certain thickness of GaInAs quantum well shells.

  6. Significantly improved luminescence properties of nitrogen-polar (0001̅) InGaN multiple quantum wells grown by pulsed metalorganic chemical vapor deposition.

    PubMed

    Song, Jie; Chang, Shih-Pang; Zhang, Cheng; Hsu, Ta-Cheng; Han, Jung

    2015-01-14

    We have demonstrated nitrogen-polar (0001̅) (N-polar) InGaN multiple quantum wells (MQWs) with significantly improved luminescence properties prepared by pulsed metalorganic chemical vapor deposition. During the growth of InGaN quantum wells, Ga and N sources are alternately injected into the reactor to alter the surface stoichiometry. The influence of flow duration in pulsed growth mode on the luminescence properties has been studied. We find that use of pulsed-mode creates a high density of hexagonal mounds with an increased InGaN growth rate and enhanced In composition around screw-type dislocations, resulting in remarkably improved luminescence properties. The mechanism of enhanced luminescence caused by the hexagonal mounds is discussed. Luminescence properties of N-polar InGaN MQWs grown with short pulse durations have been significantly improved in comparison with a sample grown by a conventional continuous growth method.

  7. Room-Temperature Multi-Peak NDR in nc-Si Quantum-Dot Stacking MOS Structures for Multiple Value Memory and Logic

    NASA Astrophysics Data System (ADS)

    Qian, Xin-Ye; Chen, Kun-Ji; Huang, Jian; Wang, Yue-Fei; Fang, Zhong-Hui; Xu, Jun; Huang, Xin-Fan

    2013-07-01

    Room-temperature negative differential resistance (NDR) characteristics are observed in a nanocrystalline Si quantum dot (nc-Si QD) floating-gate MOS structure, which is fabricated by plasma-enhanced chemical vapor deposition. Clear multi-NDR peaks for the electrons and holes, shown in the I—V curves, which are significant for the application of multiple value memory and logic, are proved to be induced by electron and hole resonant tunneling into the nc-Si QDs from the substrate. The calculation results indicate that these NDR characteristics should be associated with the Coulomb blockade effect and the quantum confinement effect of the nc-Si QDs. Furthermore, low-temperature I—V characteristics are also investigated to confirm the room-temperature results.

  8. Lateral band-gap control of InGaAsP multiple quantum wells by laser-assisted metalorganic molecular beam epitaxy for a multiwavelength laser array

    NASA Astrophysics Data System (ADS)

    Iga, Ryuzo; Yamada, Takeshi; Sugiura, Hideo

    1994-02-01

    Multiple asymmetric quantum wells made up of InGaAsP and InAsP layers were fabricated using laser irradiation. They were formed in different irradiated areas during InGaAsP quantum well growth by Ar-ion laser assisted metalorganic molecular beam epitaxy (MOMBE). It was observed that during MOMBE the band gap of InGaAsP MQW was modified. Photoluminescence wavelengths of the MAQWs were studied to observe the variations in the bandgap with a delay in the starting time of laser irradiation. The photoluminescence of the MAQWs ranged from 1.3 to 1.5 micrometer and the PL intensity of the MAQWs in four different areas were all similar. This phenomena enabled the fabrication of multiwavelength laser array on a substrate in a single step growth.

  9. Theoretical analysis of multiple quantum-well, slow-light devices under applied external fields using a fully analytical model in fractional dimension

    NASA Astrophysics Data System (ADS)

    Kohandani, R.; Kaatuzian, H.

    2015-01-01

    We report a theoretical study of optical properties of AlGaAs/GaAs multiple quantum-well (MQW), slow-light devices based on excitonic population oscillations under applied external magnetic and electric fields using an analytical model for complex dielectric constant of Wannier excitons in fractional dimension. The results are shown for quantum wells (QWs) of different width. The significant characteristics of the exciton in QWs such as exciton energy and exciton oscillator strength (EOS) can be varied by application of external magnetic and electric fields. It is found that a higher bandwidth and an appropriate slow-down factor (SDF) can be achieved by changing the QW width during the fabrication process and by applying magnetic and electric fields during device functioning, respectively. It is shown that a SDF of 105 is obtained at best.

  10. Optical study of a-plane InGaN/GaN multiple quantum wells with different well widths grown by metal-organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Ko, T. S.; Lu, T. C.; Wang, T. C.; Chen, J. R.; Gao, R. C.; Lo, M. H.; Kuo, H. C.; Wang, S. C.; Shen, J. L.

    2008-11-01

    a-plane InGaN/GaN multiple quantum wells of different widths ranging from 3 to 12 nm grown on r-plane sapphire by metal-organic chemical vapor deposition were investigated. The peak emission intensity of the photoluminescence (PL) reveals a decreasing trend as the well width increases from 3 to 12 nm. Low temperature (9 K) time-resolved PL (TRPL) study shows that the sample with 3-nm-thick wells has the best optical property with a fastest exciton decay time of 0.57 ns. The results of cathodoluminescence and micro-PL scanning images for samples of different well widths further verify that the more uniform and stronger luminescence intensity distribution are observed for the samples of thinner quantum wells. In addition, more effective capturing of excitons due to larger localization energy Eloc and shorter radiative lifetime of localized excitons are observed in thinner well width samples in the temperature dependent TRPL.

  11. Crystal growth and fabrication of a 1.3-µm-wavelength multiple-quantum-well laser on a (211)A InP substrate

    NASA Astrophysics Data System (ADS)

    Okuno, Y.; Tsuchiya, T.; Okai, M.

    1997-10-01

    We demonstrate the fabrication of a long-wavelength laser on a (211) InP substrate, with the expectation of reducing threshold current density. We found that InGaAsP single quantum wells (SQWs) could be fabricated with good optical properties provided the SQW layers were not made too thin. A laser that had an unstrained multiple-quantum-well active layer emitting at 1.3 μm was fabricated on a (211)A InP substrate. Its threshold current density was 900 A/cm2, which is comparable to the value for the same type of laser on a (100) substrate. These results suggest that long-wavelength lasers with satisfactory quality can be fabricated on a (211)A substrate.

  12. Optically confined polarized resonance Raman studies in identifying crystalline orientation of sub-diffraction limited AlGaN nanostructure

    SciTech Connect

    Sivadasan, A. K. Patsha, Avinash; Dhara, Sandip

    2015-04-27

    An optical characterization tool of Raman spectroscopy with extremely weak scattering cross section tool is not popular to analyze scattered signal from a single nanostructure in the sub-diffraction regime. In this regard, plasmonic assisted characterization tools are only relevant in spectroscopic studies of nanoscale object in the sub-diffraction limit. We have reported polarized resonance Raman spectroscopic (RRS) studies with strong electron-phonon coupling to understand the crystalline orientation of a single AlGaN nanowire of diameter ∼100 nm. AlGaN nanowire is grown by chemical vapor deposition technique using the catalyst assisted vapor-liquid-solid process. The results are compared with the high resolution transmission electron microscopic analysis. As a matter of fact, optical confinement effect due to the dielectric contrast of nanowire with respect to that of surrounding media assisted with electron-phonon coupling of RRS is useful for the spectroscopic analysis in the sub-diffraction limit of 325 nm (λ/2N.A.) using an excitation wavelength (λ) of 325 nm and near ultraviolet 40× far field objective with a numerical aperture (N.A.) value of 0.50.

  13. AlGaN UV LED and Photodiodes Radiation Hardness and Space Qualifications and Their Applications in Space Science and High Energy Density Physics

    SciTech Connect

    Sun, K. X.

    2011-05-31

    This presentation provides an overview of robust, radiation hard AlGaN optoelectronic devices and their applications in space exploration & high energy density physics. Particularly, deep UV LED and deep UV photodiodes are discussed with regard to their applications, radiation hardness and space qualification. AC charge management of UV LED satellite payload instruments, which were to be launched in late 2012, is covered.

  14. A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers

    SciTech Connect

    Davies, M. J. Hammersley, S.; Dawson, P.; Massabuau, F. C.-P.; Oliver, R. A.; Kappers, M. J.; Humphreys, C. J.

    2016-02-07

    In this paper, we report on a detailed spectroscopic study of the optical properties of InGaN/GaN multiple quantum well structures, both with and without a Si-doped InGaN prelayer. In photoluminescence and photoluminescence excitation spectroscopy, a 2nd emission band, occurring at a higher energy, was identified in the spectrum of the multiple quantum well structure containing the InGaN prelayer, originating from the first quantum well in the stack. Band structure calculations revealed that a reduction in the resultant electric field occurred in the quantum well immediately adjacent to the InGaN prelayer, therefore leading to a reduction in the strength of the quantum confined Stark effect in this quantum well. The partial suppression of the quantum confined Stark effect in this quantum well led to a modified (higher) emission energy and increased radiative recombination rate. Therefore, we ascribed the origin of the high energy emission band to recombination from the 1st quantum well in the structure. Study of the temperature dependent recombination dynamics of both samples showed that the decay time measured across the spectrum was strongly influenced by the 1st quantum well in the stack (in the sample containing the prelayer) leading to a shorter average room temperature lifetime in this sample. The room temperature internal quantum efficiency of the prelayer containing sample was found to be higher than the reference sample (36% compared to 25%) which was thus attributed to the faster radiative recombination rate of the 1st quantum well providing a recombination pathway that is more competitive with non-radiative recombination processes.

  15. ELECTROABSORPTION OF UNSTRAINED InGaAs/InAlGaAs MULTIPLE QUANTUM WELL STRUCTURE GROWN ON GaAs SUBSTRATES

    NASA Astrophysics Data System (ADS)

    Lee, Ching-Ting; Nee, Tzer-En

    Large electroabsorption was observed in InGaAs/InAlGaAs multiple quantum well structures grown on GaAs substrates operating near 1.3 μm. The molecular beam epitaxy (MBE) growth of these structures was incorporation of a carefully designed InAlAs multistage strain-relaxed buffer. The optical absorption spectra as a function of the reverse bias at room temperature are shown. The good characteristics of the optical modulators fabricated on this structure have indicated its potential for practical applications of high-speed modulation.

  16. Room-temperature operation of npn- AlGaInAs/InP multiple quantum well transistor laser emitting at 1.3-µm wavelength.

    PubMed

    Shirao, Mizuki; Sato, Takashi; Sato, Noriaki; Nishiyama, Nobuhiko; Arai, Shigehisa

    2012-02-13

    Room-temperature pulsed operation of a 1.3-µm wavelength transistor laser (TL), consisting of a buried heterostructure (BH) with an npn configuration and an AlGaInAs/InP multiple-quantum-well (MQW) active region, was successfully attained. A threshold base current of 18 mA (threshold emitter current of 150 mA) was obtained with a stripe width of 1.3 µm and a cavity length of 500 µm. The transistor activity as well as the lasing operation were achieved at the same time, which is essential for the high-speed operation of TLs.

  17. Observation of anomalous linear photogalvanic effect and its dependence on wavelength in undoped InGaAs/AlGaAs multiple quantum well

    NASA Astrophysics Data System (ADS)

    Zhu, Laipan; Liu, Yu; Gao, Hansong; Qin, Xudong; Li, Yuan; Wu, Qing; Chen, Yonghai

    2014-09-01

    We observed an anomalous linear photogalvanic effect (ALPGE) in undoped InGaAs/AlGaAs multiple quantum well and studied its wavelength dependence in details. This effect is believed to originate from the optical momentum alignment effect and the inhomogeneity of light intensity. We find that the spot location with the maximum ALPGE current is wavelength independent. And the normalized ALPGE current decreasing at smaller wavelengths is attributed to the sharp decrease of the momentum and energy relaxation time. The electrical measurement of the spectra dependence of ALPGE is highly sensitive proving to be an effective method for detecting the momentum anisotropy of photoinduced carriers and band coupling.

  18. Observation of anomalous linear photogalvanic effect and its dependence on wavelength in undoped InGaAs/AlGaAs multiple quantum well

    PubMed Central

    2014-01-01

    We observed an anomalous linear photogalvanic effect (ALPGE) in undoped InGaAs/AlGaAs multiple quantum well and studied its wavelength dependence in details. This effect is believed to originate from the optical momentum alignment effect and the inhomogeneity of light intensity. We find that the spot location with the maximum ALPGE current is wavelength independent. And the normalized ALPGE current decreasing at smaller wavelengths is attributed to the sharp decrease of the momentum and energy relaxation time. The electrical measurement of the spectra dependence of ALPGE is highly sensitive proving to be an effective method for detecting the momentum anisotropy of photoinduced carriers and band coupling. PMID:25258612

  19. Influence of thermal stress on the relative permittivity of the AlGaN barrier layer in an AlGaN/GaN heterostructure Schottky contacts

    NASA Astrophysics Data System (ADS)

    Lü, Yuan-Jie; Lin, Zhao-Jun; Zhang, Yu; Meng, Ling-Guo; Cao, Zhi-Fang; Luan, Chong-Biao; Chen, Hong; Wang, Zhan-Guo

    2011-09-01

    Ni Schottky contacts on AlGaN/GaN heterostructures were fabricated. Some samples were thermally treated in a furnace with N2 ambience at 600 °C for different times (0.5 h, 4.5 h, 10.5 h, 18 h, 33 h, 48 h, and 72 h), the others were thermally treated for 0.5 h at different temperatures (500 °C, 600 °C, 700 °C, and 800 °C). With the measured current—voltage (I—V) and capacitance—voltage (C—V) curves and by self-consistently solving Schrodinger's and Poisson's equations, we found that the relative permittivity of the AlGaN barrier layer was related to the piezoelectric and the spontaneous polarization of the AlGaN barrier layer. The relative permittivity was in proportion to the strain of the AlGaN barrier layer. The relative permittivity and the strain reduced with the increased thermal stress time until the AlGaN barrier totally relaxed (after 18 h at 600 °C in the current study), and then the relative permittivity was almost a constant with the increased thermal stress time. When the sample was treated at 800 °C for 0.5 h, the relative permittivity was less than the constant due to the huge diffusion of the contact metal atoms. Considering the relation between the relative permittivity of the AlGaN barrier layer and the converse piezoelectric effect, the conclusion can be made that a moderate thermal stress can restrain the converse piezoelectric effect and can improve the stability of AlGaN/GaN heterostructure devices.

  20. Circular photogalvanic effect induced by monopolar spin orientation in p-GaAs/AlGaAs multiple-quantum wells

    NASA Astrophysics Data System (ADS)

    Ganichev, S. D.; Ketterl, H.; Prettl, W.; Ivchenko, E. L.; Vorobjev, L. E.

    2000-11-01

    The circular photogalvanic effect (CPGE) has been observed in (100)-oriented p-GaAs/AlGaAs quantum wells at normal incidence of far-infrared radiation. It is shown that monopolar optical spin orientation of free carriers causes an electric current which reverses its direction upon changing from left to right circularly polarized radiation. CPGE at normal incidence and the occurrence of the linear photogalvanic effect indicate a reduced point symmetry of studied multilayered heterostructures. As proposed, CPGE can be utilized to investigate separately spin polarization of electrons and holes and the symmetry of quantum wells.

  1. Structural defects in the growth of multiple periods of InAs quantum dots on a GaAs substrate

    NASA Astrophysics Data System (ADS)

    Lee, Hwack Joo; Ryu, Hyun; Leam, Jae Y.; Noh, Sam K.; Lee, Hyung G.; Nahm, Sahn

    1997-02-01

    Microstructural observations on 20 periods of InAs quantum dots on a GaAs substrate grown by molecular beam epitaxy system were carried out by using high resolution transmission electron microscopy. The spherical cap-shaped InAs quantum dots were formed in a self-organized fashion, dot over dot, along the growth direction. However, two types of anomalities were found in the growth of these superlattice structures. One is the stoppage of quantum dot formation after 4 or 5 layers have been deposited. The morphology of the quantum dots was rather flat and faceted and a black and white contrast layer has appeared in the dot structure. The other type was a volcano-like defect which was grown vertically along the growth direction with a size of about 120 nm in diameter and about 400 nm in spacing. Inside the defect, black and white contrast layers have been formed along the [110] direction at the bottom of the epilayer and then changed to the [111] direction as the growth continued to the top layer.

  2. Energy Levels of a Hydrogenic Impurity in Gallium ARSENIDE/GALLIUM(1-X) Aluminum(x) Arsenide Multiple-Quantum Structures in a Magnetic Field

    NASA Astrophysics Data System (ADS)

    Nguyen, Nghia Trong

    Energy levels of a hydrogenic impurity (Si) in the (GaAs/Ga_{1-x}Al_{x }As) quantum-well systems with and without an applied magnetic field perpendicular to the interfaces have been studied theoretically. A variational approach employing the envelope wavefunction approximation has been used. The envelope wavefunction is chosen to be a product of a combination (mixing) of one or more confined states of a free electron in the one dimensional quantum-well potential considered with Gaussian trial functions. First, the study is focused on a coupled double -quantum-well model which serves as a bridge between the single-, and multiple-quantum-well structures. It is found that the binding energies depend significantly upon the well width, the barrier width, the location of the impurity, and the magnetic field. A comparison with recent experiments demonstrates that intersubband mixing plus the difference in electron effective-masses in the two semiconductors should be included in the calculations. Next, the problem is extended to the cases of multiple-quantum-well model with narrow barriers. For the doped well at the center of the structure in zero field, the calculated binding energies do not change in any significant way beyond 15 periods for either of two structures investigated (with periodicities of 80A well-9A barrier and 40A well -9A barrier). Calculations are also performed for superlattices with 15 periods in the presence of the magnetic field. Very good agreement is obtained in comparing the results with recent measurements. For the doped well at various locations within the structure, the outer boundary of the finite superlattice (15 wells) has significant effect on the binding energies, especially when the doped well is less than 4 wells away from the boundary. Finally, in a departure from above approach, we have attempted to simplify the problem by subsumming the entire effect of the superlattice periodic potential in the electron effective-mass (miniband

  3. Nanometer-scale monitoring of quantum-confined Stark effect and emission efficiency droop in multiple GaN/AlN quantum disks in nanowires

    NASA Astrophysics Data System (ADS)

    Zagonel, L. F.; Tizei, L. H. G.; Vitiello, G. Z.; Jacopin, G.; Rigutti, L.; Tchernycheva, M.; Julien, F. H.; Songmuang, R.; Ostasevicius, T.; de la Peña, F.; Ducati, C.; Midgley, P. A.; Kociak, M.

    2016-05-01

    We report on a detailed study of the intensity dependent optical properties of individual GaN/AlN quantum disks (QDisks) embedded into GaN nanowires (NW). The structural and optical properties of the QDisks were probed by high spatial resolution cathodoluminescence (CL) in a scanning transmission electron microscope (STEM). By exciting the QDisks with a nanometric electron beam at currents spanning over three orders of magnitude, strong nonlinearities (energy shifts) in the light emission are observed. In particular, we find that the amount of energy shift depends on the emission rate and on the QDisk morphology (size, position along the NW and shell thickness). For thick QDisks (>4 nm), the QDisk emission energy is observed to blueshift with the increase of the emission intensity. This is interpreted as a consequence of the increase of carriers density excited by the incident electron beam inside the QDisks, which screens the internal electric field and thus reduces the quantum confined Stark effect (QCSE) present in these QDisks. For thinner QDisks (<3 nm ), the blueshift is almost absent in agreement with the negligible QCSE at such sizes. For QDisks of intermediate sizes there exists a current threshold above which the energy shifts, marking the transition from unscreened to partially screened QCSE. From the threshold value we estimate the lifetime in the unscreened regime. These observations suggest that, counterintuitively, electrons of high energy can behave ultimately as single electron-hole pair generators. In addition, when we increase the current from 1 to 10 pA the light emission efficiency drops by more than one order of magnitude. This reduction of the emission efficiency is a manifestation of the "efficiency droop" as observed in nitride-based 2D light emitting diodes, a phenomenon tentatively attributed to the Auger effect.

  4. Optical properties of a-plane InGaN/GaN multiple quantum wells on r-plane sapphire substrates with different indium compositions

    NASA Astrophysics Data System (ADS)

    Chiu, C. H.; Kuo, S. Y.; Lo, M. H.; Ke, C. C.; Wang, T. C.; Lee, Y. T.; Kuo, H. C.; Lu, T. C.; Wang, S. C.

    2009-03-01

    A-plane InxGa1-xN/GaN (x =0.09, 0.14, 0.24, and 0.3) multiple-quantum-wells (MQWs) samples, with a well width of about 4.5 nm, were achieved by utilizing r-plane sapphire substrates. Optical quality was investigated by means of photoluminescence (PL), cathodoluminescence, and time resolved PL measurements (TRPL). Two distinguishable emission peaks were examined from the low temperature PL spectra, where the high- and low-energy peaks were ascribed to quantum wells and localized states, respectively. Due to an increase in the localized energy states and absence of quantum confined Stark effect, the quantum efficiency was increased with increasing indium composition up to 24%. As the indium composition reached 30%, however, pronounced deterioration in luminescence efficiency was observed. The phenomenon could be attributed to the high defect densities in the MQWs resulted from the increased accumulation of strain between the InGaN well and GaN barrier. This argument was verified from the much shorter carrier lifetime at 15 K and smaller activation energy for In0.3Ga0.7N/GaN MQWs. In addition, the polarization-dependent PL revealed that the degree of polarization decreased with increasing indium compositions because of the enhancement of zero-dimensional nature of the localizing centers. Our detailed investigations indicate that the indium content in a-plane InGaN/GaN MQWs not only has an influence on optical performance, but is also important for further application of nitride semiconductors.

  5. Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO3 ferroelectric film

    NASA Astrophysics Data System (ADS)

    Peng, Jing; Wu, Chuan-Ju; Sun, Tang-You; Zhao, Wen-Ning; Wu, Xiao-Feng; Liu, Wen; Wang, Shuang-Bao; Jie, Quan-Lin; Xu, Zhi-Mou

    2012-06-01

    BaTiO3 (BTO) ferroelectric thin films are prepared by the sol-gel method. The fabrication and the optical properties of an InGaN/GaN multiple quantum well light emitting diode (LED) with amorphous BTO ferroelectric thin film are studied. The photoluminescence (PL) of the BTO ferroelectric film is attributed to the structure. The ferroelectric film which annealed at 673 K for 8 h has the better PL property. The peak width is about 30 nm from 580 nm to 610 nm, towards the yellow region. The mixed electroluminescence (EL) spectrum of InGaN/GaN multiple quantum well LED with 150-nm thick amorphous BTO ferroelectric thin film displays the blue-white light. The Commission Internationale De L'Eclairage (CIE) coordinate of EL is (0.2139, 0.1627). EL wavelength and intensity depends on the composition, microstructure and thickness of the ferroelectric thin film. The transmittance of amorphous BTO thin film is about 93% at a wavelength of 450 nm-470 nm. This means the amorphous ferroelectric thin films can output more blue-ray and emission lights. In addition, the amorphous ferroelectric thin films can be directly fabricated without a binder and used at higher temperatures (200 °C-400 °C). It is very favourable to simplify the preparation process and reduce the heat dissipation requirements of an LED. This provides a new way to study LEDs.

  6. A new multiple quantum filter design procedure for use on strongly coupled spin systems found in vivo: its application to glutamate.

    PubMed

    Thompson, R B; Allen, P S

    1998-05-01

    A numerical procedure is outlined that is appropriate for the design of multiple quantum filter sequences targeted for the strongly coupled, multiple spin systems that occur in metabolites present in brain. The procedure uses numerical methods of solution of the density matrix equations, first, to establish the most appropriate resonance to target with the filter; second, to provide contour plots of a performance index of the filter in terms of critical sequence parameters; and third, to produce the response signals of the target and the background metabolites to the optimized filter. The procedure is exemplified for the AMNPQ spin system of the amino acid glutamate at a field strength of 3 T. The 2.3 ppm peak of the PQ multiplet of glutamate was identified as the target resonance, and the performance of the filter so derived was evaluated experimentally on phantom solutions and in human brain. These experiments clearly demonstrate that a linewidth of quantum filter. Nevertheless, even at a linewidth of approximately 7 Hz in vivo, the 2.3 ppm peak of glutamate dominates the filter response and thereby removes a significant cause of uncertainty in measuring changes in glutamate by eliminating most of the background observed in unedited spectra obtained using PRESS or STEAM.

  7. Condensed Matter: Electronic Structure, Electrical, Magnetic, and Optical Properties Entanglement Entropy Signature of Quantum Phase Transitions in a Multiple Spin Interactions Model

    NASA Astrophysics Data System (ADS)

    Huang, Hai-Lin

    2011-02-01

    Through the Jordan—Wigner transformation, the entanglement entropy and ground state phase diagrams of exactly solvable spin model with alternating and multiple spin exchange interactions are investigated by means of Green's function theory. In the absence of four-spin interactions, the ground state presents plentiful quantum phases due to the multiple spin interactions and magnetic fields. It is shown that the two-site entanglement entropy is a good indicator of quantum phase transition (QPT). In addition, the alternating interactions can destroy the magnetization plateau and wash out the spin-gap of low-lying excitations. However, in the presence of four-spin interactions, apart from the second order QPTs, the system manifests the first order QPT at the tricritical point and an additional new phase called “spin waves”, which is due to the collapse of the continuous tower-like low-lying excitations modulated by the four-spin interactions for large three-spin couplings.

  8. On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer

    SciTech Connect

    Zhang, Zi-Hui; Ji, Yun; Liu, Wei; Tiam Tan, Swee; Kyaw, Zabu; Ju, Zhengang; Zhang, Xueliang; Hasanov, Namig; Lu, Shunpeng; Zhang, Yiping; Zhu, Binbin; Wei Sun, Xiao E-mail: volkan@stanfordalumni.org; Volkan Demir, Hilmi E-mail: volkan@stanfordalumni.org

    2014-02-17

    In this work, the origin of electron blocking effect of n-type Al{sub 0.25}Ga{sub 0.75}N electron blocking layer (EBL) for c+ InGaN/GaN light-emitting diodes has been investigated through dual-wavelength emission method. It is found that the strong polarization induced electric field within the n-EBL reduces the thermal velocity and correspondingly the mean free path of the hot electrons. As a result, the electron capture efficiency of the multiple quantum wells is enhanced, which significantly reduces the electron overflow from the active region and increases the radiative recombination rate with holes.

  9. Multiple quantum correlated spectroscopy revamped by asymmetric z-gradient echo detection signal intensity as a function of the read pulse flip angle as verified by heteronuclear 1H/31P experiments.

    PubMed

    Jiang, Bin; Liu, Huili; Liu, Maili; Ye, Chaohui; Mao, Xi-an

    2007-02-07

    Heteronuclear multiple quantum (n=+/-0 and n=+/-2) correlated spectroscopy revamped by asymmetric z-gradient echo detection (CRAZED) experiments were performed on the spins 31P and 1H in a H3PO4 solution in order to determine the optimum flip angle for the read pulse. It has been shown that for the negative quantum signals, the maximum signals appear at beta=0, and for the positive quantum signals, the maximum signals appear at beta=pi. The CRAZED signals were compared to the single quantum signals in two-pulse two-gradient experiments. It is found that the CRAZED signals can also be distinguished into gradient echoes and spin echoes. The gradient-echo-type CRAZED signal requires beta=0 and the spin-echo-type CRAZED signal requires beta=pi for maximum echo intensities, in the same way as in single quantum experiments.

  10. UVB-emitting InAlGaN multiple quantum well synthesized using plasma-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Kong, W.; Roberts, A. T.; Jiao, W. Y.; Fournelle, J.; Kim, T. H.; Losurdo, M.; Everitt, H. O.; Brown, A. S.

    2017-03-01

    A high Al-content (y > 0.4) multi-quantum-well (MQW) structure with a quaternary InxAlyGa(1-x-y)N active layer was synthesized using plasma-assisted molecular beam epitaxy. The MQW structure exhibits strong carrier confinement and room temperature ultraviolet-B (UVB) photoluminescence an order of magnitude stronger than that of a reference InxAlyGa(1-x-y)N thin film with comparable composition and thickness. The samples were characterized using spectroscopic ellipsometry, atomic force microscopy, and high-resolution X-ray diffraction. Numerical simulations suggest that the UVB emission efficiency is limited by dislocation-related non-radiative recombination centers in the MQW and at the MQW - buffer interface. Emission efficiency can be significantly improved by reducing the dislocation density from 109c m-2 to 107c m-2 and by optimizing the width and depth of the quantum wells.

  11. Catalytic activity of enzymes immobilized on AlGaN /GaN solution gate field-effect transistors

    NASA Astrophysics Data System (ADS)

    Baur, B.; Howgate, J.; von Ribbeck, H.-G.; Gawlina, Y.; Bandalo, V.; Steinhoff, G.; Stutzmann, M.; Eickhoff, M.

    2006-10-01

    Enzyme-modified field-effect transistors (EnFETs) were prepared by immobilization of penicillinase on AlGaN /GaN solution gate field-effect transistors. The influence of the immobilization process on enzyme functionality was analyzed by comparing covalent immobilization and physisorption. Covalent immobilization by Schiff base formation on GaN surfaces modified with an aminopropyltriethoxysilane monolayer exhibits high reproducibility with respect to the enzyme/substrate affinity. Reductive amination of the Schiff base bonds to secondary amines significantly increases the stability of the enzyme layer. Electronic characterization of the EnFET response to penicillin G indicates that covalent immobilization leads to the formation of an enzyme (sub)monolayer.

  12. Modelling and Optimising GaAs/Al(x)Ga(1-x)As Multiple Quantum Well Solar Cells

    NASA Astrophysics Data System (ADS)

    Connolly, James P.

    2010-06-01

    The quantum well solar cell (QWSC) is a p - i - n solar cell with quantum wells in the intrinsic region. Previous work has shown that QWSCs have a greater open circuit voltage (Voc) than would be provided by a cell with the quantum well effective bandgap. This suggests that the fundamental efficiency limits of QWSCs are greater than those of single bandgap solar cells. The following work investigates QWSCs in the GaAs/AlxGa1-xAs materials system. The design and optimisation of a QWSC in this system requires studies of the voltage and current dependencies on the aluminium fraction. QWSCs with different aluminium fractions have been studied and show an increasing Voc with increasing barrier aluminium composition. The QE however decreases with increasing aluminium composition. We develop a model of the QE to test novel QWSC designs with a view to minimising this problem. This work concentrates on two design changes. The first deals with com- positionally graded structures in which the bandgap varies with position. This bandgap variation introduces an quasi electric field which can be used to increase minority carrier collection in the low efficiency p and n layers. This technique also increases the light flux reaching the highly efficient depletion regions. The second design change consists of coating the back of the cell with a mirror to exploit the portion of light which is not absorbed on the first pass. A model of the QE of compositionally graded QWSC solar cells with back surface mirrors is developed in order to analyse the effect of these design changes. These changes are implemented separately in a number of QWSC designs and the resulting experimental data compared with the model. An optimised design is then presented.

  13. Uncertainty under quantum measures and quantum memory

    NASA Astrophysics Data System (ADS)

    Xiao, Yunlong; Jing, Naihuan; Li-Jost, Xianqing

    2017-04-01

    The uncertainty principle restricts potential information one gains about physical properties of the measured particle. However, if the particle is prepared in entanglement with a quantum memory, the corresponding entropic uncertainty relation will vary. Based on the knowledge of correlations between the measured particle and quantum memory, we have investigated the entropic uncertainty relations for two and multiple measurements and generalized the lower bounds on the sum of Shannon entropies without quantum side information to those that allow quantum memory. In particular, we have obtained generalization of Kaniewski-Tomamichel-Wehner's bound for effective measures and majorization bounds for noneffective measures to allow quantum side information. Furthermore, we have derived several strong bounds for the entropic uncertainty relations in the presence of quantum memory for two and multiple measurements. Finally, potential applications of our results to entanglement witnesses are discussed via the entropic uncertainty relation in the absence of quantum memory.

  14. Improved mobility of AlGaN channel heterojunction material using an AlGaN/GaN composite buffer layer

    NASA Astrophysics Data System (ADS)

    Wen, Hui-Juan; Zhang, Jin-Cheng; Lu, Xiao-Li; Wang, Zhi-Zhe; Ha, Wei; Ge, Sha-Sha; Cao, Rong-Tao; Hao, Yue

    2014-03-01

    The quality of an AlGaN channel heterojunction on a sapphire substrate is massively improved by using an AlGaN/GaN composite buffer layer. We demonstrate an Al0.4Ga0.5N/Al0.18Ga0.82N heterojunction with a state-of-the-art mobility of 815 cm2/(V·s) and a sheet resistance of 890 Ω/□ under room temperature. The crystalline quality and the electrical properties of the AlGaN heterojunction material are analyzed by atomic force microscopy, high-resolution X-ray diffraction, and van der Pauw Hall and capacitance—voltage (C—V) measurements. The results indicate that the improved electrical properties should derive from the reduced surface roughness and low dislocation density.

  15. Inductively coupled BCl3/Cl2 /Ar plasma etching of Al-rich AlGaN

    SciTech Connect

    Douglas, Erica A.; Sanchez, Carlos A.; Kaplar, Robert J.; Allerman, Andrew A.; Baca, Albert G.

    2016-12-01

    Varying atomic ratios in compound semiconductors is well known to have large effects on the etching properties of the material. The use of thin device barrier layers, down to 25 nm, adds to the fabrication complexity by requiring precise control over etch rates and surface morphology. The effects of bias power and gas ratio of BCl3 to Cl2 for inductively coupled plasma etching of high Al content AlGaN were contrasted with AlN in this study for etch rate, selectivity, and surface morphology. Etch rates were greatly affected by both bias power and gas chemistry. Here we detail the effects of small variations in Al composition for AlGaN and show substantial changes in etch rate with regards to bias power as compared to AlN.

  16. Defects reduction in a-plane AlGaN epi-layers grown on r-plane sapphire substrates by metal organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Zhao, Jianguo; Zhang, Xiong; Dai, Qian; Wang, Nan; Wu, Zili; Wang, Shuchang; Cui, Yiping

    2017-01-01

    Nonpolar a-plane AlGaN epi-layers were grown on a semi-polar r-plane sapphire substrate with an innovative two-way pulsed-flows metal organic chemical vapor deposition growth technology. A root-mean-square value of 1.79 nm was achieved, and the relative light transmittance of the a-plane AlGaN epi-layer was enhanced by 36.9%. These results reveal that the innovative growth method is able to improve the surface morphology and reduce the defect density in nonpolar a-plane Al x Ga1- x N epi-layers, particularly those with an Al composition greater than 0.5, which are key materials for the fabrication of nonpolar AlGaN-based high light emission efficiency deep-ultraviolet light-emitting diodes.

  17. Carrier relaxation dynamics and steady-state charge distributions in coupled InGaN/GaN multiple and single quantum wells

    NASA Astrophysics Data System (ADS)

    Khatsevich, S.; Rich, D. H.; Keller, S.; DenBaars, S. P.

    2007-05-01

    We have examined the carrier capture dynamics and excitation dependent charge distributions of coupled InGaN/GaN multiple quantum well samples. We measured the temporal evolution of time-delayed cathodoluminescence (CL) spectra to study the temperature- and excitation-dependent transfer of carriers from a surrounding confinement region into a coupled single quantum well. Samples possessing two different structures for the confinement region [i.e., number of quantum wells (QWs) and varying widths] were examined with CL. In order to study state filling of the SQW and QWs in the confinement region, we calculated the quasi-Fermi levels and carrier densities by utilizing a model that involves self-consistent solutions of the nonlinear Poisson-Schrödinger equation for wurtzite QWs including strain, deformation potentials, and polarization fields. Band-edge and effective mass parameters were first obtained from a strain- and In composition-dependent k ṡp calculation for wurtzite InxGa1-xN, using a 6×6 kṡp Hamiltonian in the {0001} representation. The model shows that the difference in the quasi-Fermi levels between the confinement and SQW regions decreases with increasing excitation and temperature. Likewise, a reversal in the relative magnitude of the carrier densities between these two regions occurs at a certain temperature and excitation. Furthermore, the results for the model describing the steady-state excitation are consistent with those for the transient excitation in time-resolved CL, which also exhibit a marked increase in the rate of carrier transfer to the SQW region as the temperature increases.

  18. Multimode Raman light-atom interface in warm atomic ensemble as multiple three-mode quantum operations

    NASA Astrophysics Data System (ADS)

    Parniak, Michał; Pęcak, Daniel; Wasilewski, Wojciech

    2016-11-01

    We analyse the properties of a Raman quantum light-atom interface in long atomic ensemble and its applications as a quantum memory or two-mode squeezed state generator. We consider the weak-coupling regime and include both Stokes and anti-Stokes scattering and the effects of Doppler broadening in buffer gas assuming frequent velocity-averaging collisions. We find the Green functions describing multimode transformation from input to output fields of photons and atomic excitations. Proper mode basis is found via singular value decomposition for short interaction times. It reveals that triples of modes are coupled by a transformation equivalent to a combination of two beamsplitters and a two-mode squeezing operation. We analyse the possible transformations on an example of warm rubidium-87 vapour. The model we present bridges the gap between the Stokes only and anti-Stokes only interactions providing simple, universal description in a temporally and longitudinally multimode situation. Our results also provide an easy way to find an evolution of the states in a Schrödinger picture thus facilitating understanding and design.

  19. On-chip electrochemical detection of CdS quantum dots using normal and multiple recycling flow through modes.

    PubMed

    Medina-Sánchez, Mariana; Miserere, Sandrine; Marín, Sergio; Aragay, Gemma; Merkoçi, Arben

    2012-05-08

    A flexible hybrid polydimethylsiloxane (PDMS)-polycarbonate (PC) microfluidic chip with integrated screen printed electrodes (SPE) was fabricated and applied for electrochemical quantum dots (QDs) detection. The developed device combines the advantages of flexible microfluidic chips, such as their low cost, the possibility to be disposable and amenable to mass production, with the advantages of electrochemistry for its facility of integration and the possibility to miniaturize the analytical device. Due to the interest in biosensing applications in general and particularly the great demand for labelling alternatives in affinity biosensors, the electrochemistry of cadmium sulfide quantum dots (CdS QDs) is evaluated. Square wave anodic stripping voltammetry (SWASV) is the technique used due to its sensitivity and low detection limits that can be achieved. The electrochemical as well as the microfluidic parameters of the developed system are optimized. The detection of CdS QDs in the range between 50 to 8000 ng mL(-1) with a sensitivity of 0.0009 μA/(ng mL(-1)) has been achieved. In addition to the single in-chip flow through measurements, the design of a recirculation system with the aim of achieving lower detection limits using reduced volumes (25 μL) of sample was proposed as a proof-of-concept.

  20. Implication of rapid thermal annealing-induced cracks on the performance of multiple-quantum-well laser diodes.

    PubMed

    Yee, Hoshin H; Yu, Chih-Ping

    2003-05-20

    We investigated the effects of rapid thermal annealing (RTA)-induced cracks on the diode performance fabricated with GaAs-AlGaAs microstructures. These effects were examined and characterized after quantum-well intermixing within an epitaxial structure capped by either SiO2 or SrF2 layers. The results show clearly that the density of surface crackes strongly depends on the atomic interdiffusion between the well and the barrier layers and on the quality of the dielectric caps as well. Moreover, surface-crack correlation with the RTA process an dielectric deposition parameters, and the cracking effects on diode performance were observed and analyzed in detail. The results demonstrate that diode characteristics can be greatly improved by good surface morphology. Most importantly, we explored an effective way of reducing the density of RTA-induced cracks for the dielectrics grown by plasma-enhanced chemical vapor deposition, which was beneficial for dielectric-cap quantum-well disordering.

  1. Multiple Quantum Coherences (MQ) NMR and Entanglement Dynamics in the Mixed-Three-Spin XXX Heisenberg Model with Single-Ion Anisotropy

    NASA Astrophysics Data System (ADS)

    Arian Zad, Hamid

    2016-12-01

    We analytically investigate Multiple Quantum (MQ) NMR dynamics in a mixed-three-spin (1/2,1,1/2) system with XXX Heisenberg model at the front of an external homogeneous magnetic field B. A single-ion anisotropy property ζ is considered for the spin-1. The intensities dependence of MQ NMR coherences on their orders (zeroth and second orders) for two pairs of spins (1,1/2) and (1/2,1/2) of the favorite tripartite system are obtained. It is also investigated dynamics of the pairwise quantum entanglement for the bipartite (sub)systems (1,1/2) and (1/2,1/2) permanently coupled by, respectively, coupling constants J}1 and J}2, by means of concurrence and fidelity. Then, some straightforward comparisons are done between these quantities and the intensities of MQ NMR coherences and ultimately some interesting results are reported. We also show that the time evolution of MQ coherences based on the reduced density matrix of the pair spins (1,1/2) is closely connected with the dynamics of the pairwise entanglement. Finally, we prove that one can introduce MQ coherence of the zeroth order corresponds to the pair spins (1,1/2) as an entanglement witness at some special time intervals.

  2. Compensation doping in InGaAs / GaAsP multiple quantum well solar cells for efficient carrier transport and improved cell performance

    NASA Astrophysics Data System (ADS)

    Fujii, Hiromasa; Wang, Yunpeng; Watanabe, Kentaroh; Sugiyama, Masakazu; Nakano, Yoshiaki

    2013-09-01

    A major challenge for multiple quantum well (MQW) solar cells is to extract sufficient photo-excited carriers to an external circuit through the MQW region under forward bias. The present study reports the effectiveness of compensation doping in the i-region, which includes MQWs, for more efficient transport of both electrons and holes. Unintentional p-type background doping occurs in GaAs by inevitable carbon incorporation during metal-organic vapor phase epitaxy, causing undesirable bending of the band lineup in the i-region of p-on-n devices. By cancelling this out by sulfur compensation doping to obtain a uniform electric field distribution, we achieved much a high carrier collection efficiency (CCE) >90% at the operating bias voltage regardless of the excitation wavelength, compared to < 50% without compensation doping. Consequently, cell performance was greatly improved, in particular showing an enhancement of the fill factor from 0.54 to 0.77, and degradation-free quantum efficiency within the GaAs absorption wavelength range. The photoluminescence (PL) intensity from the MQW increased as the CCE decreased at a large forward bias, and radiative recombination loss was significantly suppressed by compensation doping. Furthermore, time-resolved PL measurements indicated a much higher speed of carrier escape from the wells, showing a quicker PL decay time of 7 ns at 0.6 V, compared to 18-51 ns without compensation doping.

  3. Multiple exciton generation induced enhancement of the photoresponse of pulsed-laser-ablation synthesized single-wall-carbon-nanotube/PbS-quantum-dots nanohybrids

    PubMed Central

    Ka, Ibrahima; Le Borgne, Vincent; Fujisawa, Kazunori; Hayashi, Takuya; Kim, Yoong Ahm; Endo, Morinobu; Ma, Dongling; El Khakani, My Ali

    2016-01-01

    The pulsed laser deposition method was used to decorate appropriately single wall carbon nanotubes (SWCNTs) with PbS quantum dots (QDs), leading to the formation of a novel class of SWCNTs/PbS-QDs nanohybrids (NHs), without resorting to any ligand engineering and/or surface functionalization. The number of laser ablation pulses (NLp) was used to control the average size of the PbS-QDs and their coverage on the SWCNTs’ surface. Photoconductive (PC) devices fabricated from these SWCNTs/PbS-QDs NHs have shown a significantly enhanced photoresponse, which is found to be PbS-QD size dependent. Wavelength-resolved photocurrent measurements revealed a strong photoconductivity of the NHs in the UV-visible region, which is shown to be due to multiple exciton generation (MEG) in the PbS-QDs. For the 6.5 nm-diameter PbS-QDs (with a bandgap (Eg) = 0.86 eV), the MEG contribution of the NHs based PC devices was shown to lead to a normalized internal quantum efficiency in excess of 300% for photon energies ≥4.5Eg. While the lowest MEG threshold in our NHs based PC devices is found to be of ~2.5Eg, the MEG efficiency reaches values as high as 0.9 ± 0.1. PMID:26830452

  4. InN/InGaN multiple quantum wells emitting at 1.5 {mu}m grown by molecular beam epitaxy

    SciTech Connect

    Grandal, J.; Pereiro, J.; Bengoechea-Encabo, A.; Fernandez-Garrido, S.; Sanchez-Garcia, M. A.; Munoz, E.; Calleja, E.

    2011-02-07

    This work reports on the growth by molecular beam epitaxy and characterization of InN/InGaN multiple quantum wells (MQWs) emitting at 1.5 {mu}m. X-ray diffraction (XRD) spectra show satellite peaks up to the second order. Estimated values of well (3 nm) and barrier (9 nm) thicknesses were derived from transmission electron microscopy and the fit between experimental data and simulated XRD spectra. Transmission electron microscopy and XRD simulations also confirmed that the InGaN barriers are relaxed with respect to the GaN template, while the InN MQWs grew under biaxial compression on the InGaN barriers. Low temperature (14 K) photoluminescence measurements reveal an emission from the InN MQWs at 1.5 {mu}m. Measurements as a function of temperature indicate the existence of localized states, probably due to InN quantum wells' thickness fluctuations as observed by transmission electron microscopy.

  5. Synergizing the multiple plasmon resonance coupling and quantum effects to obtain enhanced SERS and PEC performance simultaneously on a noble metal-semiconductor substrate.

    PubMed

    Yang, Tao; Liu, Wenna; Li, Lidong; Chen, Junhong; Hou, Xinmei; Chou, Kuo-Chih

    2017-02-09

    Aiming to achieve the synergistic enhancement of the surface-enhanced Raman scattering (SERS) and photoelectrocatalytic (PEC) performance on a noble metal-semiconductor, such as Au nanoparticles (NPs)-TiO2 nanotube arrays (TiO2 NTAs@hybrid Au NPs), theoretical calculation and experiments are performed. Theoretical calculation indicates that both the SERS and PEC performance can be enhanced by coupling different sized Au NPs on TiO2 NTAs based on synergizing the multiple plasmon resonance coupling and quantum effects. To further verify this mechanism, TiO2 NTAs@hybrid Au NPs are assembled via synthesis of TiO2 NTAs through the anodic oxidation process, followed by the deposition of different sized Au NPs onto the TiO2 surface simultaneously using physical vapor deposition (PVD) in this work. Such substrates exhibit excellent detection sensitivity towards organic dyes including Rhodamine B (RhB), the organic herbicide dichlorophenoxyacetic acid (2,4-D) and the organophosphate pesticide methyl-parathion (MP) with high reproducibility, stability and reusability. Meanwhile the PEC performance based on this substrate remains efficient compared with the reported results in the literature. The efficient PEC performance mainly originates from both the quantum effect of Au nanoparticles and the formation of a metal-semiconductor heterojunction. It is proposed that other noble metal-semiconductor complex nanomaterials can also obtain both enhanced SERS and PEC performance based on the above mechanism.

  6. Characterization of nonpolar a-plane InGaN/GaN multiple quantum well using double nanopillar SiO2 mask

    NASA Astrophysics Data System (ADS)

    Son, Ji-Su; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi

    2014-01-01

    The characteristics of nonpolar a-plane (11\\bar{2}0) GaN (a-GaN) grown using single and double nanopillar SiO2 masks were investigated. The two nanopillar SiO2 masks were directly fabricated on an r-plane sapphire substrate and a-GaN by the epitaxial lateral overgrowth (ELOG) technique. Through the use of the single and double nanopillar SiO2 masks, the crystalline quality and optical properties of a-GaN were markedly improved because of the nanoscale ELOG effect and a number of voids in the single and double nanopillar SiO2 mask areas in comparison with the planar sample. The submicron pit densities of the planar, single, and double nanopillar mask samples were ˜2 × 109, ˜7 × 108, and ˜4 × 108 cm-2, respectively. The internal quantum efficiency (IQE) values at room temperature of three-period InGaN/GaN multiple quantum wells (MQWs) grown using the planar, single, and double nanopillar masks were 45, 60, and 68% at a carrier concentration of 1.0 × 1018 cm-3, respectively.

  7. Reduction of Polarization Field Strength in Fully Strained c-Plane InGaN/(In)GaN Multiple Quantum Wells Grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Zhang, Feng; Ikeda, Masao; Zhang, Shu-Ming; Liu, Jian-Ping; Tian, Ai-Qin; Wen, Peng-Yan; Cheng, Yang; Yang, Hui

    2016-11-01

    The polarization fields in c-plane InGaN/(In)GaN multiple quantum well (MQW) structures grown on sapphire substrate by metal-organic chemical vapor deposition are investigated in this paper. The indium composition in the quantum wells varies from 14.8 to 26.5% for different samples. The photoluminescence wavelengths are calculated theoretically by fully considering the related effects and compared with the measured wavelengths. It is found that when the indium content is lower than 17.3%, the measured wavelengths agree well with the theoretical values. However, when the indium content is higher than 17.3%, the measured ones are much shorter than the calculation results. This discrepancy is attributed to the reduced polarization field in the MQWs. For the MQWs with lower indium content, 100% theoretical polarization can be maintained, while, when the indium content is higher, the polarization field decreases significantly. The polarization field can be weakened down to 23% of the theoretical value when the indium content is 26.5%. Strain relaxation is excluded as the origin of the polarization reduction because there is no sign of lattice relaxation in the structures, judging by the X-ray diffraction reciprocal space mapping. The possible causes of the polarization reduction are discussed.

  8. Reduction of Polarization Field Strength in Fully Strained c-Plane InGaN/(In)GaN Multiple Quantum Wells Grown by MOCVD.

    PubMed

    Zhang, Feng; Ikeda, Masao; Zhang, Shu-Ming; Liu, Jian-Ping; Tian, Ai-Qin; Wen, Peng-Yan; Cheng, Yang; Yang, Hui

    2016-12-01

    The polarization fields in c-plane InGaN/(In)GaN multiple quantum well (MQW) structures grown on sapphire substrate by metal-organic chemical vapor deposition are investigated in this paper. The indium composition in the quantum wells varies from 14.8 to 26.5% for different samples. The photoluminescence wavelengths are calculated theoretically by fully considering the related effects and compared with the measured wavelengths. It is found that when the indium content is lower than 17.3%, the measured wavelengths agree well with the theoretical values. However, when the indium content is higher than 17.3%, the measured ones are much shorter than the calculation results. This discrepancy is attributed to the reduced polarization field in the MQWs. For the MQWs with lower indium content, 100% theoretical polarization can be maintained, while, when the indium content is higher, the polarization field decreases significantly. The polarization field can be weakened down to 23% of the theoretical value when the indium content is 26.5%. Strain relaxation is excluded as the origin of the polarization reduction because there is no sign of lattice relaxation in the structures, judging by the X-ray diffraction reciprocal space mapping. The possible causes of the polarization reduction are discussed.

  9. Vacancies in InxGa1-xN/GaN multiple quantum wells fabricated on m-plane GaN probed by a monoenergetic positron beam

    NASA Astrophysics Data System (ADS)

    Uedono, Akira; Kurihara, Kaori; Yoshihara, Nakaaki; Nagao, Satoshi; Ishibashi, Shoji

    2015-05-01

    Vacancy-type defects in InxGa1-xN/GaN multiple-quantum-well (MQW) structures fabricated on m-plane GaN by metal-organic chemical vapor deposition have been studied using a monoenergetic positron beam. Through measurements of Doppler broadening spectra of the annihilation radiation, the vacancy-type defects in MQW structures were probed. The positron trapping rate of defects decreased under photon illumination, which is attributed to the emission of electrons from those defects and/or the suppression of the positron diffusion by optically active defects. The energy level of the defects was close to the energy of photoluminescence emissions. The relationship between the energy width of the photoluminescence line and the defects is discussed.

  10. Simultaneous light emission and detection of InGaN/GaN multiple quantum well diodes for in-plane visible light communication

    NASA Astrophysics Data System (ADS)

    Wang, Yongjin; Xu, Yin; Yang, Yongchao; Gao, Xumin; Zhu, Bingcheng; Cai, Wei; Yuan, Jialei; Zhang, Rong; Zhu, Hongbo

    2017-03-01

    This paper presents the design, fabrication, and experimental characterization of monolithically integrated p-n junction InGaN/GaN multiple quantum well diodes (MQWDs) and suspended waveguides. Suspended MQWDs can be used as transmitters and receivers simultaneously, and suspended waveguides are used for light coupling to create an in-plane visible light communication system. Compared to the waveguide with separation trench, the calculated total light efficiency is increased from 18% to 22% for the continuous waveguide. The MQWDs are characterized by their typical current-voltage performance, and the pulse excitation measurements confirm that the InGaN/GaN MQWDs can achieve the light emission and photodetection at the same time. The photocurrent measurements indicate that the photocurrent is modulated by a bias voltage and that the photons are being supplied from another transmitter. An experimental demonstration is presented showing that the proposed device works well for in-plane full-duplex communication using visible light.

  11. Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes

    PubMed Central

    Jeong, Hyun; Jeong, Hyeon Jun; Oh, Hye Min; Hong, Chang-Hee; Suh, Eun-Kyung; Lerondel, Gilles; Jeong, Mun Seok

    2015-01-01

    Carrier localization phenomena in indium-rich InGaN/GaN multiple quantum wells (MQWs) grown on sapphire and GaN substrates were investigated. Temperature-dependent photoluminescence (PL) spectroscopy, ultraviolet near-field scanning optical microscopy (NSOM), and confocal time-resolved PL (TRPL) spectroscopy were employed to verify the correlation between carrier localization and crystal quality. From the spatially resolved PL measurements, we observed that the distribution and shape of luminescent clusters, which were known as an outcome of the carrier localization, are strongly affected by the crystalline quality. Spectroscopic analysis of the NSOM signal shows that carrier localization of MQWs with low crystalline quality is different from that of MQWs with high crystalline quality. This interrelation between carrier localization and crystal quality is well supported by confocal TRPL results. PMID:25792246

  12. Spin transport in undoped InGaAs/AlGaAs multiple quantum well studied via spin photocurrent excited by circularly polarized light.

    PubMed

    Zhu, Laipan; Liu, Yu; Huang, Wei; Qin, Xudong; Li, Yuan; Wu, Qing; Chen, Yonghai

    2016-12-01

    The spin diffusion and drift at different excitation wavelengths and different temperatures have been studied in undoped InGaAs/AlGaAs multiple quantum well (MQW). The spin polarization was created by optical spin orientation using circularly polarized light, and the reciprocal spin Hall effect was employed to measure the spin polarization current. We measured the ratio of the spin diffusion coefficient to the mobility of spin-polarized carriers. From the wavelength dependence of the ratio, we found that the spin diffusion and drift of holes became as important as electrons in this undoped MQW, and the ratio for light holes was much smaller than that for heavy holes at room temperature. From the temperature dependence of the ratio, the correction factors for the common Einstein relationship for spin-polarized electrons and heavy holes were firstly obtained to be 93 and 286, respectively.

  13. 1.06-μm InGaAs/GaAs multiple-quantum-well optical thyristor lasers with a PiNiN structure.

    PubMed

    Wang, Huolei; Mi, Junping; Zhou, Xuliang; Meriggi, Laura; Steer, Matthew; Cui, Bifeng; Chen, Weixi; Pan, Jiaoqing; Ding, Ying

    2013-11-15

    InGaAs/GaAs multiple quantum well (MQW)-depleted optical thyristor lasers operating at 1.06 μm with a waveguide-type PiNiN structure is presented for the first time. The optical thyristor lasers clearly show nonlinear S-shaped current-voltage and lasing characteristics. The measured switching voltage and current are 5 V and 1 mA, respectively. The holding voltage and current are 2.6 V and 3.6 mA, respectively. A relatively high output light power of 30 mW per facet at room temperature is achieved. The lasing wavelength is 1.055 μm at a bias current of 80 mA at 25 °C.

  14. InGaAsP/InAlAs type I/type II multiple quantum well structures grown by gas source molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Kawamura, Yuichi; Iwamura, Hidetoshi

    1995-05-01

    In 1- xGa xAs 1- yP y/In 0.52Al 0.48As multiple quantum well (MQW) structures have been grown on InP substrates by gas source molecular beam epitaxy and the compositional dependence of the optical properties are studied by photoluminescence and optical absorption measurements. It is found that the type I/type II transition occurs at a P composition of 0.60. From the compositional dependence of the effective bandgap of the InGaAsP/InAlAs MQW structure, the valence band discontinuity ( ΔEv) of the InP/InAlAs hetero-interface is estimated to be 0.20 eV, which is consistent with the result for the conduction band discontinuity ( ΔEc) of In 1- w-zGa wAl zAs/InP MQW structures.

  15. Photoinduced defects in a-Si:H Films and InGaN/GaN multiple quantum well structures doped with Eu, Sm, and Eu + Sm

    NASA Astrophysics Data System (ADS)

    Mezdrogina, M. M.; Terukov, E. I.; Trapeznikova, I. N.; Kozhanova, Yu. V.

    2015-09-01

    Photoinduced defects in a-Si:H films arise due to an increase in the density of midgap states when weak strained silicon-hydrogen (Si-H) bonds transform to dangling Si—Si bonds and also due to the presence of separate regions with different densities and types of Si—H bonds. In rare-earth-doped InGaN/GaN multiple quantum well structures, defects are induced as a result of increasing the luminescence excitation intensity in taking microphotoluminescence spectra. This complicates the spatial relief of the random potential mainly in the lateral plane and may result in clustering, with In content in the clusters differing from the mean value, and even precipitation of the InN and GaN phases.

  16. Spin depolarization under low electric fields at low temperatures in undoped InGaAs/AlGaAs multiple quantum well

    SciTech Connect

    Zhu, Laipan; Liu, Yu; Jiang, Chongyun; Yu, Jinling; Gao, Hansong; Ma, Hui; Qin, Xudong; Li, Yuan; Wu, Qing; Chen, Yonghai

    2014-10-13

    The spin polarization under low electric fields (≤300 V/cm) at low temperatures has been studied in undoped InGaAs/AlGaAs multiple quantum well. The spin polarization was created by optical spin orientation using circularly polarized light and the inverse spin-Hall effect was employed to measure the spin polarization current. We observed an obvious spin depolarization especially at lower temperatures (80–120 K). We ascribed the spin depolarization of the photoinduced electrons to the heating effect from the low electric fields (the low field regime 50–300 V/cm). This spin depolarization due to the heating effect is sensitive to temperature and electric field, suggesting a wide range of potential applications and devices.

  17. Current-injection two-color lasing in a wafer-bonded coupled multilayer cavity with InGaAs multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Minami, Yasuo; Ota, Hiroto; Lu, Xiangmeng; Kumagai, Naoto; Kitada, Takahiro; Isu, Toshiro

    2017-04-01

    Current-injection two-color lasing has been demonstrated using a GaAs/AlGaAs coupled multilayer cavity that is a good candidate for novel terahertz-emitting devices based on difference-frequency generation (DFG) inside the structure. The coupled cavity structure was fabricated by the direct wafer bonding of (001)- and (113)B-oriented epitaxial wafers for the efficient DFG of two modes in the (113)B side cavity, and two types of InGaAs multiple quantum wells (MQWs) were introduced only in the (001) side cavity as optical gain materials. The threshold behavior was clearly observed in the current–light output curve even at room temperature. Two-color lasing was successfully observed when the gain peaks of MQWs were considerably tuned to the cavity modes by the operating temperature.

  18. Growth and Implementation of Carbon-Doped AlGaN Layers for Enhancement-Mode HEMTs on 200 mm Si Substrates

    NASA Astrophysics Data System (ADS)

    Su, Jie; Posthuma, Niels; Wellekens, Dirk; Saripalli, Yoga N.; Decoutere, Stefaan; Arif, Ronald; Papasouliotis, George D.

    2016-12-01

    We are reporting the growth of AlGaN based enhancement-mode high electron mobility transistors (HEMTs) on 200 mm silicon (111) substrates using a single wafer metalorganic chemical vapor deposition reactor. It is found that TMAl pre-dosing conditions are critical in controlling the structural quality, surface morphology, and wafer bow of the HEMT stack. Optimal structural quality and pit-free surface are demonstrated for AlGaN HEMTs with pre-dosing temperature at 750°C. Intrinsically, carbon-doped AlGaN, is used as the current blocking layer in the HEMT structures. The lateral buffer breakdown and device breakdown characteristics, reach 400 V at a leakage current of 1 μA/mm measured at 150°C. The fabricated HEMT devices, with a Mg doped p-GaN gate layer, are operating in enhancement mode reaching a positive threshold voltage of 2-2.5 V, a low on-resistance of 10.5 Ω mm with a high drain saturation current of 0.35 A/mm, and a low forward bias gate leakage current of 0.5 × 10-6 A/mm ( V gs = 7 V). Tight distribution of device parameters across the 200 mm wafers and over repeat process runs is observed.

  19. AlN and AlGaN layers grown on Si(111) substrate by mixed-source hydride vapor phase epitaxy method

    NASA Astrophysics Data System (ADS)

    Jeon, Hunsoo; Jeon, Injun; Lee, Gang Seok; Bae, Sung Geun; Ahn, Hyung Soo; Yang, Min; Yi, Sam Nyung; Yu, Young Moon; Honda, Yoshio; Sawaki, Nobuhiko; Kim, Suck-Whan

    2017-01-01

    High Al-composition AlGaN and AlN epilayers were grown directly on Si(111) substrate by a hydride vapor phase epitaxy (HVPE) method with a melted mixed source in a graphite boat set in a source zone with high temperatures of T = 700 and 800 °C, respectively. The presence of the Ga material in the mixed source of Ga and Al promoted the growth of AlN and AlGaN epilayers in the growth zone. When the temperature in the source zone was 800 °C, the crystalline quality of the AlN and AlGaN epilayers increased as the ratio of Ga to Al increased, and the optimum mix ratio of Ga to Al for the growth of AlN epilayers was approximately 0.35-0.42, obtained from a numerical fitting analysis of the X-ray diffraction (XRD) data for these epilayers. It appears that they can be grown directly by our melted-mixed-source HVPE method in a high-temperature source zone.

  20. Polariton Bose–Einstein condensate at room temperature in an Al(Ga)N nanowire–dielectric microcavity with a spatial potential trap

    PubMed Central

    Das, Ayan; Bhattacharya, Pallab; Heo, Junseok; Banerjee, Animesh; Guo, Wei

    2013-01-01

    A spatial potential trap is formed in a 6.0-μm Al(Ga)N nanowire by varying the Al composition along its length during epitaxial growth. The polariton emission characteristics of a dielectric microcavity with the single nanowire embedded in-plane have been studied at room temperature. Excitation is provided at the Al(Ga)N end of the nanowire, and polariton emission is observed from the lowest bandgap GaN region within the potential trap. Comparison of the results with those measured in an identical microcavity with a uniform GaN nanowire and having an identical exciton–photon detuning suggests evaporative cooling of the polaritons as they are transported into the trap in the Al(Ga)N nanowire. Measurement of the spectral characteristics of the polariton emission, their momentum distribution, first-order spatial coherence, and time-resolved measurements of polariton cooling provides strong evidence of the formation of a near-equilibrium Bose–Einstein condensate in the GaN region of the nanowire at room temperature. In contrast, the condensate formed in the uniform GaN nanowire–dielectric microcavity without the spatial potential trap is only in self-equilibrium. PMID:23382183

  1. Dislocation blocking by AlGaN hot electron injecting layer in the epitaxial growth of GaN terahertz Gunn diode

    NASA Astrophysics Data System (ADS)

    Li, Liang; Yang, Lin'an; Zhang, Jincheng; Hao, Yue

    2013-09-01

    This paper reports an efficient method to improve the crystal quality of GaN Gunn diode with AlGaN hot electron injecting layer (HEI). An evident reduction of screw dislocation and edge dislocation densities is achieved by the strain management and the enhanced lateral growth in high temperature grown AlGaN HEI layer. Compared with the top hot electron injecting layer (THEI) structure, the bottom hot electron injecting layer (BHEI) structure enhances the crystal quality of transit region due to the growth sequence modulation of HEI layer. A high Hall mobility of 2934 cm2/Vs at 77 K, a nearly flat downtrend of Hall mobility at the temperature ranging from 300 to 573 K, a low intensity of ratio of yellow luminescence band to band edge emission, a narrow band edge emission line-width, and a smooth surface morphology are observed for the BHEI structural epitaxy of Gunn diode, which indicates that AlGaN BHEI structure is a promising candidate for fabrication of GaN Gunn diodes in terahertz regime.

  2. Effect of surface pretreatment on interfacial chemical bonding states of atomic layer deposited ZrO{sub 2} on AlGaN

    SciTech Connect

    Ye, Gang; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Ang, Kian Siong; Wang, Hong; Liu, Zhi Hong

    2015-09-15

    Atomic layer deposition (ALD) of ZrO{sub 2} on native oxide covered (untreated) and buffered oxide etchant (BOE) treated AlGaN surface was analyzed by utilizing x-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy. Evidenced by Ga–O and Al–O chemical bonds by XPS, parasitic oxidation during deposition is largely enhanced on BOE treated AlGaN surface. Due to the high reactivity of Al atoms, more prominent oxidation of Al atoms is observed, which leads to thicker interfacial layer formed on BOE treated surface. The results suggest that native oxide on AlGaN surface may serve as a protecting layer to inhibit the surface from further parasitic oxidation during ALD. The findings provide important process guidelines for the use of ALD ZrO{sub 2} and its pre-ALD surface treatments for high-k AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors and other related device applications.

  3. Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN

    NASA Astrophysics Data System (ADS)

    Clemente, Iosif E.; Miakonkikh, Andrey V.

    2016-12-01

    Atomic layer deposition (ALD) of Al2O3 on Si and AlGaN substrates was studied in situ by means of spectral ellipsometry. Method was used for optimization of process of atomic layer deposition. Optical model takes into account all layers of transparent structure typical for gallium nitride devices Al2O3/AlGaN/AlN/GaN. Developed model is able to measure in situ temperature of wafer before the process and its change during the deposition which is critical for development of new process and understanding of chemical reactions. Difference in temperature between chuck and sample were calculated. Spectral ellipsometry was used to determine initial nucleation lag of film growth which is different on silicon and AlGaN surface and chemical transient during the first steps of deposition. Removal of native oxide in AlGaN structures could play key role in observed effects of passivation GaN transistor structures by alumina.

  4. Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO{sub 2} grown by atomic layer deposition

    SciTech Connect

    Ye, Gang; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Ang, Kian Siong; Wang, Hong; Liu, Zhi Hong

    2015-03-02

    The effect of post-deposition annealing on chemical bonding states at interface between Al{sub 0.5}Ga{sub 0.5}N and ZrO{sub 2} grown by atomic layer deposition (ALD) is studied by angle-resolved x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. It has been found that both of Al-O/Al 2p and Ga-O/Ga 3d area ratio decrease at annealing temperatures lower than 500 °C, which could be attributed to “clean up” effect of ALD-ZrO{sub 2} on AlGaN. Compared to Ga spectra, a much larger decrease in Al-O/Al 2p ratio at a smaller take-off angle θ is observed, which indicates higher effectiveness of the passivation of Al-O bond than Ga-O bond through “clean up” effect near the interface. However, degradation of ZrO{sub 2}/AlGaN interface quality due to re-oxidation at higher annealing temperature (>500 °C) is also found. The XPS spectra clearly reveal that Al atoms at ZrO{sub 2}/AlGaN interface are easier to get oxidized as compared with Ga atoms.

  5. Analysis of the effects of applying external fields and device dimensions alterations on GaAs/AlGaAs multiple quantum well slow light devices based on excitonic population oscillation.

    PubMed

    Kohandani, Reza; Zandi, Ashkan; Kaatuzian, Hassan

    2014-02-20

    This paper demonstrates the effects of applying magnetic and electric fields and physical dimensions alterations on AlGaAs/GaAs multiple quantum well (QW) slow light devices. Physical parameters include quantum well sizes and number of quantum wells. To the best of our knowledge, this is the first analysis of the effects of both applying magnetic/electric fields and physical parameters alterations and the first suggestion for matching the prefabrication and post fabrication tuning of the slow light devices based on excitonic population oscillations. The aim of our theoretical analysis is controlling the optical properties such as central frequency, bandwidth, and slow down factor (SDF) in slow light devices based on excitonic population oscillation to achieve better tuning. To reach these purposes, first we investigate the quantum well size and number of quantum wells alteration effects. Next, we analyze the effects of applying magnetic and electric fields to the multiple quantum well structure, separately. Finally, physical parameters and applied external fields are changed for measuring frequency shift and SDF for coherent population oscillation slow light devices. The results show the available central frequency shifts in about 1.6 THz at best. Also the SDF value improvement is about one order of magnitude. These results will be applicable for optical nonlinearity enhancements, all-optical signal processing, optical communications, all-optical switches, optical modulators, and variable true delays.

  6. Study of dual-directional high rate secure communication systems using chaotic multiple-quantum-well lasers

    NASA Astrophysics Data System (ADS)

    Yan, Sen-Lin

    2007-11-01

    A scheme of synchronized injection multi-quantum-well (MQW) laser system using optical coupling-feedback is presented for performing chaotic dual-directional secure communication. The performance characterization of chaos masking is investigated theoretically, the equation of synchronization demodulation is deduced and its root is also given. Chaos masking encoding with a rate of 5Gbit/s and a modulation frequency of 1GHz, chaos modulation with a rate of 0.2Gbit/s and a modulation frequency of 0.2 GHz and chaos shifting key with a rate of 0.2Gbit/s are numerically simulated, separately. The ratio of the signal to the absolute synchronous error and the time for achieving synchronous demodulation are analysed in detail. The results illustrate that the system has stronger privacy and good performances so that it can be applied in chaotic dual-directional high rate secure communications.

  7. The Effect of Magnetic Field Inhomogeneity on the Transverse Relaxation of Quadrupolar Nuclei Measured by Multiple Quantum Filtered NMR

    NASA Astrophysics Data System (ADS)

    Eliav, U.; Kushnir, T.; Knubovets, T.; Itzchak, Y.; Navon, G.

    1997-09-01

    The effects of magnetic fieldsB0andB1inhomogeneities on techniques which are commonly used for the measurements of triple-quantum-filtered (TQF) NMR spectroscopy of23Na in biological tissues are analyzed. The results of measurements by pulse sequences with and without refocusing ofB0inhomogeneities are compared. It is shown that without refocusing the errors in the measurement of the transverse relaxation times by TQF NMR spectroscopy may be as large as 100%, and thus, refocusing of magnetic field inhomogeneity is mandatory. Theoretical calculations demonstrate that without refocusingB0inhomogeneities the spectral width and phase depend on the interpulse time intervals, thus, leading to errors in the measured relaxation times. It is shown that pulse sequences that were used for the refocusing of the magnetic field (B0) inhomogeneity also reduce the sensitivity of the experimental results to radiofrequency (B1) magnetic field inhomogeneity.

  8. Exciton localization in (11-22)-oriented semi-polar InGaN multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Monavarian, Morteza; Rosales, Daniel; Gil, Bernard; Izyumskaya, Natalia; Das, Saikat; Özgür, Ümit; Morkoç, Hadis; Avrutin, Vitaliy

    2016-02-01

    Excitonic recombination dynamics in (11-22) -oriented semipolar In0.2Ga0.8N/In0.06Ga0.94N multiquantum wells (MQWs) grown on GaN/m-sapphire templates have been investigated by temperature-dependent time-resolved photoluminescence (TRPL). The radiative and nonradiative recombination contributions to the PL intensity at different temperatures were evaluated by analysing temperature dependences of PL peak intensity and decay times. The obtained data indicate the existence of exciton localization with a localization energy of Eloc(15K) =7meV and delocalization temperature of Tdeloc = 200K in the semipolar InGaN MQWs. Presence of such exciton localization in semipolar (11-22) -oriented structures could lead to improvement of excitonic emission and internal quantum efficiency.

  9. Hydrogen Generation using non-polar coaxial InGaN/GaN Multiple Quantum Well Structure Formed on Hollow n-GaN Nanowires

    PubMed Central

    Park, Ji-Hyeon; Mandal, Arjun; Kang, San; Chatterjee, Uddipta; Kim, Jin Soo; Park, Byung-Guon; Kim, Moon-Deock; Jeong, Kwang-Un; Lee, Cheul-Ro

    2016-01-01

    This article demonstrates for the first time to the best of our knowledge, the merits of InGaN/GaN multiple quantum wells (MQWs) grown on hollow n-GaN nanowires (NWs) as a plausible alternative for stable photoelectrochemical water splitting and efficient hydrogen generation. These hollow nanowires are achieved by a growth method rather not by conventional etching process. Therefore this approach becomes simplistic yet most effective. We believe relatively low Ga flux during the selective area growth (SAG) aids the hollow nanowire to grow. To compare the optoelectronic properties, simultaneously solid nanowires are also studied. In this present communication, we exhibit that lower thermal conductivity of hollow n-GaN NWs affects the material quality of InGaN/GaN MQWs by limiting In diffusion. As a result of this improvement in material quality and structural properties, photocurrent and photosensitivity are enhanced compared to the structures grown on solid n-GaN NWs. An incident photon-to-current efficiency (IPCE) of around ~33.3% is recorded at 365 nm wavelength for hollow NWs. We believe that multiple reflections of incident light inside the hollow n-GaN NWs assists in producing a larger amount of electron hole pairs in the active region. As a result the rate of hydrogen generation is also increased. PMID:27556534

  10. Hydrogen Generation using non-polar coaxial InGaN/GaN Multiple Quantum Well Structure Formed on Hollow n-GaN Nanowires

    NASA Astrophysics Data System (ADS)

    Park, Ji-Hyeon; Mandal, Arjun; Kang, San; Chatterjee, Uddipta; Kim, Jin Soo; Park, Byung-Guon; Kim, Moon-Deock; Jeong, Kwang-Un; Lee, Cheul-Ro

    2016-08-01

    This article demonstrates for the first time to the best of our knowledge, the merits of InGaN/GaN multiple quantum wells (MQWs) grown on hollow n-GaN nanowires (NWs) as a plausible alternative for stable photoelectrochemical water splitting and efficient hydrogen generation. These hollow nanowires are achieved by a growth method rather not by conventional etching process. Therefore this approach becomes simplistic yet most effective. We believe relatively low Ga flux during the selective area growth (SAG) aids the hollow nanowire to grow. To compare the optoelectronic properties, simultaneously solid nanowires are also studied. In this present communication, we exhibit that lower thermal conductivity of hollow n-GaN NWs affects the material quality of InGaN/GaN MQWs by limiting In diffusion. As a result of this improvement in material quality and structural properties, photocurrent and photosensitivity are enhanced compared to the structures grown on solid n-GaN NWs. An incident photon-to-current efficiency (IPCE) of around ~33.3% is recorded at 365 nm wavelength for hollow NWs. We believe that multiple reflections of incident light inside the hollow n-GaN NWs assists in producing a larger amount of electron hole pairs in the active region. As a result the rate of hydrogen generation is also increased.

  11. Effects of multiple interruptions with trimethylindium-treatment in the InGaN/GaN quantum well on green light emitting diodes

    NASA Astrophysics Data System (ADS)

    Qiao, Liang; Ma, Zi-Guang; Chen, Hong; Wu, Hai-Yan; Chen, Xue-Fang; Yang, Hao-Jun; Zhao, Bin; He, Miao; Zheng, Shu-Wen; Li, Shu-Ti

    2016-10-01

    In this study, the influence of multiple interruptions with trimethylindium (TMIn)-treatment in InGaN/GaN multiple quantum wells (MQWs) on green light-emitting diode (LED) is investigated. A comparison of conventional LEDs with the one fabricated with our method shows that the latter has better optical properties. Photoluminescence (PL) full-width at half maximum (FWHM) is reduced, light output power is much higher and the blue shift of electroluminescence (EL) dominant wavelength becomes smaller with current increasing. These improvements should be attributed to the reduced interface roughness of MQW and more uniformity of indium distribution in MQWs by the interruptions with TMIn-treatment. Project supported by the National Natural Science Foundation of China (Grant Nos. 11204360 and 61210014), the Science and Technology Planning Projects of Guangdong Province, China (Grant Nos. 2014B050505020, 2015B010114007, and 2014B090904045), the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20134407110008), the Guangzhou Municipal Science and Technology Project of Guangdong Province, China (Grant No. 2016201604030027), and the Zhongshan Science and Technology Project of Guangdong Province, China (Grant No. 2013B3FC0003).

  12. Sub-250nm room temperature optical gain from AlGaN materials with strong compositional fluctuations

    NASA Astrophysics Data System (ADS)

    Pecora, Emanuele; Zhang, Wei; Sun, Haiding; Nikiforov, A.; Yin, Jian; Paiella, Roberto; Moustakas, Theodore; Dal Negro, Luca

    2013-03-01

    Compact and portable deep-UV LEDs and laser sources are needed for a number of engineering applications including optical communications, gas sensing, biochemical agent detection, disinfection, biotechnology and medical diagnostics. We investigate the deep-UV optical emission and gain properties of AlxGa1-xN/AlyGa1-yN multiple quantum wells structure. These structures were grown by molecular-beam epitaxy on 6H-SiC substrates resulting in either homogeneous wells or various degrees of band-structure compositional fluctuations in the form of cluster-like features within the wells. We measured the TE-polarized amplified spontaneous emission in the sample with cluster-like features and quantified the optical absorption/gain coefficients and gain spectra by the Variable Stripe Length (VSL) technique under ultrafast optical pumping. We report blue-shift and narrowing of the emission, VSL traces, gain spectra, polarization studies, and the validity of the Schalow-Townes relation to demonstrate a maximum net modal gain of 120 cm-1 at 250 nm in the sample with strong compositional fluctuations. Moreover, we measure a very low gain threshold (15 μJ/cm2) . On the other hand, we found that samples with homogeneous quantum wells lead to absorption only. In addition, we report gain measurements in graded-index-separate-confined heterostructure (GRINSCH) designed to increase the device optical confinement factor.

  13. Large TE polarized optical gain from AlInN-delta-GaN quantum well for ultraviolet lasers

    NASA Astrophysics Data System (ADS)

    Liu, Cheng; Ooi, Yu Kee; Zhang, Jing

    2016-03-01

    Ultraviolet (UV) lasers with wavelength (λ) < 300 nm have important applications in free-space communication, water/air purification, and biochemical agent detection. Conventionally, AlGaN quantum wells (QWs) are widely used as active region for UV lasers. However, high-efficiency electrically injected mid-UV lasers with λ ~ 250-300 nm are still very challenging as the corresponding AlGaN QWs suffer from severe band-mixing effect due to the presence of the valence sub-band crossover between the heavy-hole (HH) and crystal-field split off (CH) sub-bands, which would result in very low optical gain in such wavelength regime. Therefore, in this work, we propose and investigate the use of AlInN material system as an alternative for mid-UV lasers. Nanostructure engineering by the use of AlInN-delta-GaN QW has been performed to enable dominant conduction band - HH sub-band transition as well as optimized electron-hole wave function overlap. The insertion of the ultra-thin delta-GaN layer, which is lattice-matched to Al0.82In0.18N layer, would localize the wave functions strongly toward the center of the active region, leading to large transverse electric (TE) polarized optical gain (gTE) for λ~ 250- 300 nm. From our finding, the use of AlInN-delta-GaN QW resulted in ~ 3-times enhancement in TE-polarized optical gain, in comparison to that of conventional AlGaN QW, for gain media emitting at ~ 255 nm. The peak emission wavelength can be tuned by varying the delta layer thickness while maintaining large TE gain. Specifically, gTE ~ 3700 cm-1 was obtained for λ ~ 280-300 nm, which are very challenging for conventional AlGaN QW active region.

  14. Breaking the carbon dimer: the challenges of multiple bond dissociation with full configuration interaction quantum Monte Carlo methods.

    PubMed

    Booth, George H; Cleland, Deidre; Thom, Alex J W; Alavi, Ali

    2011-08-28

    The full configuration interaction quantum Monte Carlo (FCIQMC) method, as well as its "initiator" extension (i-FCIQMC), is used to tackle the complex electronic structure of the carbon dimer across the entire dissociation reaction coordinate, as a prototypical example of a strongly correlated molecular system. Various basis sets of increasing size up to the large cc-pVQZ are used, spanning a fully accessible N-electron basis of over 10(12) Slater determinants, and the accuracy of the method is demonstrated in each basis set. Convergence to the FCI limit is achieved in the largest basis with only O[10(7)] walkers within random errorbars of a few tenths of a millihartree across the binding curve, and extensive comparisons to FCI, CCSD(T), MRCI, and CEEIS results are made where possible. A detailed exposition of the convergence properties of the FCIQMC methods is provided, considering convergence with elapsed imaginary time, number of walkers and size of the basis. Various symmetries which can be incorporated into the stochastic dynamic, beyond the standard abelian point group symmetry and spin polarisation are also described. These can have significant benefit to the computational effort of the calculations, as well as the ability to converge to various excited states. The results presented demonstrate a new benchmark accuracy in basis-set energies for systems of this size, significantly improving on previous state of the art estimates.

  15. Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy

    SciTech Connect

    Oliveira, F.; Fischer, I. A.; Schulze, J.; Benedetti, A.; Zaumseil, P.; Cerqueira, M. F.; Vasilevskiy, M. I.; Stefanov, S.; Chiussi, S.

    2015-12-28

    We report on the fabrication and structural characterization of epitaxially grown ultra-thin layers of Sn on Ge virtual substrates (Si buffer layer overgrown by a 50 nm thick Ge epilayer followed by an annealing step). Samples with 1 to 5 monolayers of Sn on Ge virtual substrates were grown using solid source molecular beam epitaxy and characterized by atomic force microscopy. We determined the critical thickness at which the transition from two-dimensional to three-dimensional growth occurs. This transition is due to the large lattice mismatch between Ge and Sn (≈14.7%). By depositing Ge on top of Sn layers, which have thicknesses at or just below the critical thickness, we were able to fabricate ultra-narrow GeSn multi-quantum-well structures that are fully embedded in Ge. We report results on samples with one and ten GeSn wells separated by 5 and 10 nm thick Ge spacer layers that were characterized by high resolution transmission electron microscopy and X-ray diffraction. We discuss the structure and material intermixing observed in the samples.

  16. Temperature dependence of mid-infrared intersubband absorption in AlGaN/GaN multiple quantum wells

    SciTech Connect

    Kotani, Teruhisa; Arita, Munetaka; Hoshino, Katsuyuki; Arakawa, Yasuhiko

    2016-02-01

    The temperature dependence of the mid-infrared intersubband (ISB) absorption in non-polar (m-plane) and polar (c-plane) AlGaN/GaN quantum wells (QWs) is studied. The ISB absorption shifts to higher energy as the temperature is reduced from 300 K to below 10 K. Both m-plane and c-plane QWs show a small energy shift (1.6–2.6 meV) compared to AlGaAs/GaAs (3.5–5.2 meV) and AlSb/InAs (6.2 and 12 meV) QWs. Theoretical calculations considering the temperature induced material constant changes show good agreement with the experimental results. These results suggest that ISB transition energies in AlGaN/GaN QWs are more stable against temperature change mainly because of the heavy effective masses and small nonparabolicities.

  17. Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice.

    PubMed

    Wang, Xiao; Wang, Wei; Wang, Jingli; Wu, Hao; Liu, Chang

    2017-03-14

    P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)5/(GaN)1 superlattice (SL) in Al0.83Ga0.17N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as MgGa δ doped AlGaN SLs. Mg acceptor activation energy was significantly reduced from 0.378 to 0.331 eV by using MgGa δ doping in SLs instead of traditional doping in alloys. This new process was confirmed to be able to realize high p-type doping in high Al-content AlGaN.

  18. Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice

    NASA Astrophysics Data System (ADS)

    Wang, Xiao; Wang, Wei; Wang, Jingli; Wu, Hao; Liu, Chang

    2017-03-01

    P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)5/(GaN)1 superlattice (SL) in Al0.83Ga0.17N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as MgGa δ doped AlGaN SLs. Mg acceptor activation energy was significantly reduced from 0.378 to 0.331 eV by using MgGa δ doping in SLs instead of traditional doping in alloys. This new process was confirmed to be able to realize high p-type doping in high Al-content AlGaN.

  19. Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice

    PubMed Central

    Wang, Xiao; Wang, Wei; Wang, Jingli; Wu, Hao; Liu, Chang

    2017-01-01

    P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)5/(GaN)1 superlattice (SL) in Al0.83Ga0.17N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as MgGa δ doped AlGaN SLs. Mg acceptor activation energy was significantly reduced from 0.378 to 0.331 eV by using MgGa δ doping in SLs instead of traditional doping in alloys. This new process was confirmed to be able to realize high p-type doping in high Al-content AlGaN. PMID:28290480

  20. CONDENSED MATTER: STRUCTURE, THERMAL AND MECHANICAL PROPERTIES: The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates

    NASA Astrophysics Data System (ADS)

    Wu, Yu-Xin; Zhu, Jian-Jun; Zhao, De-Gang; Liu, Zong-Shun; Jiang, De-Sheng; Zhang, Shu-Ming; Wang, Yu-Tian; Wang, Hui; Chen, Gui-Feng; Yang, Hui

    2009-10-01

    High-quality and nearly crack-free GaN epitaxial layer was obtained by inserting a single AlGaN interlayer between GaN epilayer and high-temperature AlN buffer layer on Si (111) substrate by metalorganic chemical vapor deposition. This paper investigates the effect of AlGaN interlayer on the structural properties of the resulting GaN epilayer. It confirms from the optical microscopy and Raman scattering spectroscopy that the AlGaN interlayer has a remarkable effect on introducing relative compressive strain to the top GaN layer and preventing the formation of cracks. X-ray diffraction and transmission electron microscopy analysis reveal that a significant reduction in both screw and edge threading dislocations is achieved in GaN epilayer by the insertion of AlGaN interlayer. The process of threading dislocation reduction in both AlGaN interlayer and GaN epilayer is demonstrated.

  1. A 23Na Multiple-Quantum-Filtered NMR Study of the Effect of the Cytoskeleton Conformation on the Anisotropic Motion of Sodium Ions in Red Blood Cells

    NASA Astrophysics Data System (ADS)

    Knubovets, Tatyana; Shinar, Hadassah; Eliav, Uzi; Navon, Gil

    1996-01-01

    Recently, it has been shown that23Na double-quantum-filtered NMR spectroscopy can be used to detect anisotropic motion of bound sodium ions in biological systems. The technique is based on the formation of the second-rank tensor when the quadrupolar interaction is not averaged to zero. Using this method, anisotropic motion of bound sodium in human and dog red blood cells was detected, and the effect was shown to depend on the integrity of the membrane cytoskeleton. In the present study, multiple-quantum-filtered techniques were applied in combination with a quadrupolar echo to measure the transverse-relaxation times,T2fandT2s. Line fitting was performed to obtain the values of the residual quadrupolar interaction, which was measured for sodium in a variety of mammalian erythrocytes of different size, shape, rheological properties, and sodium concentrations. Human unsealed white ghosts were used to study sodium bound at the anisotropic sites on the inner side of the RBC membrane. Modulations of the conformation of the cytoskeleton by the variation of either the ionic strength or pH of the suspending medium caused drastic changes in both the residual quadrupolar interaction andT2fdue to changes in the fraction of bound sodium ions as well as changes in the structure of the binding sites. By combining the two spectroscopic parameters, structural change can be followed. The changes in the structure of the sodium anisotropic binding sites deduced by this method were found to correlate with known conformational changes of the membrane cytoskeleton. Variations of the medium pH affected both the fraction of bound sodium ions and the structure of the anisotropic binding sites. Sodium and potassium were shown to bind to the anisotropic binding sites with the same affinity.

  2. Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlattices

    PubMed Central

    Zheng, T. C.; Lin, W.; Liu, R.; Cai, D. J.; Li, J. C.; Li, S. P.; Kang, J. Y.

    2016-01-01

    A novel multidimensional Mg-doped superlattice (SL) is proposed to enhance vertical hole conductivity in conventional Mg-doped AlGaN SL which generally suffers from large potential barrier for holes. Electronic structure calculations within the first-principle theoretical framework indicate that the densities of states (DOS) of the valence band nearby the Fermi level are more delocalized along the c-axis than that in conventional SL, and the potential barrier significantly decreases. Hole concentration is greatly enhanced in the barrier of multidimensional SL. Detailed comparisons of partial charges and decomposed DOS reveal that the improvement of vertical conductance may be ascribed to the stronger pz hybridization between Mg and N. Based on the theoretical analysis, highly conductive p-type multidimensional Al0.63Ga0.37N/Al0.51Ga0.49N SLs are grown with identified steps via metalorganic vapor-phase epitaxy. The hole concentration reaches up to 3.5 × 1018 cm−3, while the corresponding resistivity reduces to 0.7 Ω cm at room temperature, which is tens times improvement in conductivity compared with that of conventional SLs. High hole concentration can be maintained even at 100 K. High p-type conductivity in Al-rich structural material is an important step for the future design of superior AlGaN-based deep ultraviolet devices. PMID:26906334

  3. Modelling of capacitance and threshold voltage for ultrathin normally-off AlGaN /GaN MOSHEMT

    NASA Astrophysics Data System (ADS)

    Swain, R.; Jena, K.; Lenka, T. R.

    2017-01-01

    A compact quantitative model based on oxide semiconductor interface density of states (DOS) is proposed for Al0.25Ga0.75N/GaN metal oxide semiconductor high electron mobility transistor (MOSHEMT). Mathematical expressions for surface potential, sheet charge concentration, gate capacitance and threshold voltage have been derived. The gate capacitance behaviour is studied in terms of capacitance-voltage (CV) characteristics. Similarly, the predicted threshold voltage ( V T) is analysed by varying barrier thickness and oxide thickness. The positive V T obtained for a very thin 3 nm AlGaN barrier layer enables the enhancement mode operation of the MOSHEMT. These devices, along with depletion mode devices, are basic constituents of cascode configuration in power electronic circuits. The expressions developed are used in conventional long-channel HEMT drain current equation and evaluated to obtain different DC characteristics. The obtained results are compared with experimental data taken from literature which show good agreement and hence endorse the proposed model.

  4. High f T and f max AlGaN/GaN HFETs achieved by using thin and high-Al-composition AlGaN barrier layers and Cat-CVD SiN passivation

    NASA Astrophysics Data System (ADS)

    Higashiwaki, M.; Onojima, N.; Matsui, T.; Mimura, T.

    2006-05-01

    We fabricated sub-0.1 m-gate Al0.4Ga0.6N/GaN heterostructure field-effect transistors (HFETs) with AlGaN barrier thicknesses of 4-10 nm. The devices were passivated with 2 nm-thick SiN layers formed by catalytic chemical vapor deposition (Cat-CVD). The Cat-CVD SiN passivation greatly increased electron density, and the effect became more significant with decreasing AlGaN barrier thickness. The HFETs had maximum drain current densities of 1.1-1.5 A/mm and peak extrinsic transconductances of 305-438 mS/mm. Peak current-gain cutoff frequency of 163 GHz and maximum oscillation frequency of 192 GHz were obtained for the devices with 8 nm-thick AlGaN barriers.

  5. Exciton-phonon interaction in Al0.4Ga0.6N/Al0.53Ga0.47N multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Liu, Ya-Li; Jin, Peng; Liu, Gui-Peng; Wang, Wei-Ying; Qi, Zhi-Qiang; Chen, Chang-Qing; Wang, Zhan-Guo

    2016-08-01

    The exciton-phonon interaction in Al0.4Ga0.6N/Al0.53Ga0.47N multiple quantum wells (MQWs) is studied by deep-ultraviolet time-integrated and time-resolved photoluminescence (PL). Up to four longitudinal-optical (LO) phonon replicas of exciton recombination are observed, indicating the strong coupling of excitons with LO phonons in the MQWs. Moreover, the exciton-phonon coupling strength in the MQWs is quantified by the Huang-Rhys factor, and it keeps almost constant in a temperature range from 10 K to 120 K. This result can be explained in terms of effects of fluctuations in the well thickness in the MQWs and the temperature on the exciton-phonon interaction. Project supported by the National Basic Research Program of China (Grant No. 2012CB619306), the Beijing Science and Technology Project, China (Grant No. Z151100003315024), and the National Natural Science Foundation of China (Grant No. 61404132).

  6. Quantum dot imaging in the second near-infrared optical window: studies on reflectance fluorescence imaging depths by effective fluence rate and multiple image acquisition

    NASA Astrophysics Data System (ADS)

    Jung, Yebin; Jeong, Sanghwa; Nayoun, Won; Ahn, Boeun; Kwag, Jungheon; Geol Kim, Sang; Kim, Sungjee

    2015-04-01

    Quantum dot (QD) imaging capability was investigated by the imaging depth at a near-infrared second optical window (SOW; 1000 to 1400 nm) using time-modulated pulsed laser excitations to control the effective fluence rate. Various media, such as liquid phantoms, tissues, and in vivo small animals, were used and the imaging depths were compared with our predicted values. The QD imaging depth under excitation of continuous 20 mW/cm2 laser was determined to be 10.3 mm for 2 wt% hemoglobin phantom medium and 5.85 mm for 1 wt% intralipid phantom, which were extended by more than two times on increasing the effective fluence rate to 2000 mW/cm2. Bovine liver and porcine skin tissues also showed similar enhancement in the contrast-to-noise ratio (CNR) values. A QD sample was inserted into the abdomen of a mouse. With a higher effective fluence rate, the CNR increased more than twofold and the QD sample became clearly visualized, which was completely undetectable under continuous excitation. Multiple acquisitions of QD images and averaging process pixel by pixel were performed to overcome the thermal noise issue of the detector in SOW, which yielded significant enhancement in the imaging capability, showing up to a 1.5 times increase in the CNR.

  7. NMR Method for Characterizing Microsecond-to-Millisecond Chemical Exchanges Utilizing Differential Multiple-Quantum Relaxation in High Molecular Weight Proteins.

    PubMed

    Toyama, Yuki; Osawa, Masanori; Yokogawa, Mariko; Shimada, Ichio

    2016-02-24

    Chemical exchange processes of proteins on the order of microseconds (μs) to milliseconds (ms) play critical roles in biological functions. Developments in methyl-transverse relaxation optimized spectroscopy (methyl-TROSY), which observes the slowly relaxing multiple quantum (MQ) coherences, have enabled the studies of biologically important large proteins. However, the analyses of μs to ms chemical exchange processes based on the methyl-TROSY principle are still challenging, because the interpretation of the chemical exchange contributions to the MQ relaxation profiles is complicated, as significant chemical shift differences occur in both (1)H and (13)C nuclei. Here, we report a new methyl-based NMR method for characterizing chemical exchanges, utilizing differential MQ relaxation rates and a heteronuclear double resonance pulse technique. The method enables quantitative evaluations of the chemical exchange processes, in which significant chemical shift differences exist in both the (1)H and (13)C nuclei. The versatility of the method is demonstrated with the application to KirBac1.1, with an apparent molecular mass of 200 kDa.

  8. Impact of Strain Accumulation on InGaAs/GaAsP Multiple-Quantum-Well Solar Cells: Direct Correlation between In situ Strain Measurement and Cell Performances

    NASA Astrophysics Data System (ADS)

    Sodabanlu, Hassanet; Ma, Shaojun; Watanabe, Kentaroh; Sugiyama, Masakazu; Nakano, Yoshiaki

    2012-10-01

    The effects of accumulating strain inside InGaAs/GaAsP multiple-quantum-well (MQW) solar cells were investigated and their correlation with in situ wafer curvature measurement was examined. The p-i-n GaAs solar cells, containing 20-period InGaAs/GaAsP MQWs in an i-GaAs layer, were fabricated by metalorganic vapor phase epitaxy. The strain inside MQWs was varied by changing In content in an InGaAs well, while maintaining other parameters. As evidenced by curvature transience, the excessive strain led to lattice relaxation, resulting in defects, dislocations, and poor crystal quality. Consequently, short circuit current density and open circuit voltage deteriorated, and solar cell performance degraded. The highest conversion efficiency was obtained in a strain-balanced MQW solar cell. InGaAs/GaAsP MQWs have a great potential for extending the absorption edge of GaAs cells and for enhancing the efficiency of III/V multijunction solar cells by current matching. Hence, the growth of InGaAs/GaAsP MQWs for photovoltaic application requires a strain monitoring system and careful control such that the accumulating strain is minimized.

  9. Molecular weight distributions of irradiated siloxane-based elastomers: A complementary study by statistical modeling and multiple quantum nuclear magnetic resonance

    SciTech Connect

    Dinh, L. N.; Mayer, B. P.; Maiti, A.; Chinn, S. C.; Maxwell, R. S.

    2011-05-01

    The statistical methodology of population balance (PB) has been applied in order to predict the effects of cross-linking and chain-scissioning induced by ionizing radiation on the distribution of molecular weight between cross-links (MWBC) of a siloxane-based elastomer. Effective molecular weight distributions were extracted from the quantification of residual dipolar couplings via multiple quantum nuclear magnetic resonance (MQ-NMR) measurements and are taken to reflect actual MWBC distributions. The PB methodology is then applied to the unirradiated MWBC distribution and considers both chain-scissioning and the possibility of the formation of three types of cross-links: random recombination of scissioned-chain ends (end-linking), random covalent bonds of free radicals on scissioned-chain ends (Y-cross-linking), and the formation of random cross-links from free radicals on side groups (H-cross-linking). The qualitative agreement between the statistical modeling approach and the NMR data confirms that it is possible to predict trends for the evolution of the distribution of MWBC of polymers under irradiation. The approach described herein can also discern heterogeneities in radiation effects in different structural motifs in the polymer network.

  10. Phosphor-free white light-emitting diode using InGaN/GaN multiple quantum wells grown on microfacets

    NASA Astrophysics Data System (ADS)

    Cho, Chu-young; Park, Il-Kyu; Kwon, Min-Ki; Kim, Ja-Yeon; Park, Seong-Ju; Jung, Dong Ryul; Kwon, Kwang Woo

    2008-08-01

    We demonstrate phosphor-free light-emitting diode (LED) by growing InGaN/GaN multiple quantum wells (MQWs) on the n-GaN microfacets. The white emission was realized by combining emissions from InGaN/GaN MQWs grown on cplane (0001), semipolar {11-22} and {1-101} facets which are selectively grown on n-GaN with trapezoidal shape arrays. The photoluminescence (PL) and electroluminescence (EL) measurement revealed that the long wavelength light was emitted from InGaN/GaN MQWs grown on c-plane (0001), while the short wavelength light was emitted from that of semipolar microfacets. The change in the emission wavelengths from each microfacets was due to the difference in the well thickness and In composition of each MQWs. The LED showed white emission at an injection current between 180 and 230 mA. These results suggested that white emission is possible without using the phosphor by combining emission lights emitted from microfacets.

  11. New Insights into Chain Order Dynamics and Structural Development in Sulfur-Vulcanized Natural Rubber Latex using Multiple Quantum NMR and Synchrotron X-Ray Diffraction

    NASA Astrophysics Data System (ADS)

    Che, Justin; Toki, Shigeyuki; Valentin, Juan; Brasero, Justo; Rong, Lixia; Hsiao, Benjamin S.

    2012-02-01

    Network structure, chain dynamics, and structural development in sulfur-vulcanized natural rubber latex were studied by Multiple-Quantum (MQ) NMR and synchrotron x-ray scattering. Three important processes that can influence rubber network structure and its overall mechanical properties were the main focus and analyzed by both of these techniques: pre-vulcanization, drying, and post-vulcanization. MQ NMR experiments can provide quantitative information regarding networks at very small length scales, including network defects, number of cross-links, and spatial distribution of cross-links. Structural development in natural rubber was studied under uniaxial deformation by in-situ synchrotron x-ray diffraction, which can provide information on network structures at much larger length scales. Molecular orientation and strain-induced crystallization was analyzed by both stress-strain relations and wide-angle x-ray diffraction (WAXD). The morphology of the latex rubber particle during deformation was analyzed by small-angle x-ray scattering (SAXS). The combination of these techniques can provide a considerable amount of information regarding rubber network structure.

  12. Effect of localization states on the electroluminescence spectral width of blue–green light emitting InGaN/GaN multiple quantum wells

    SciTech Connect

    Liu, Wei; Zhao, De Gang Jiang, De Sheng; Chen, Ping; Liu, Zong Shun; Zhu, Jian Jun; Li, Xiang; Shi, Ming; Zhao, Dan Mei; Liu, Jian Ping; Zhang, Shu Ming; Wang, Hui; Yang, Hui

    2015-11-15

    The electroluminescence (EL) spectra of blue–green light emitting InGaN/GaN multiple quantum well (MQW) structures grown via metal-organic chemical vapor deposition are investigated. With increasing In content in InGaN well layers, the peak energy redshifts, the emission intensity reduces and the inhomogeneous broadening of the luminescence band increases. In addition, it is found that the EL spectra shrink with increasing injection current at low excitation condition, which may be ascribed to both Coulomb screening of polarization field and carrier transferring from shallower localization states to the deeper ones, while at high currents the state-filling effect in all localization states may become significant and lead to a broadening of EL spectra. However, surprisingly, for the MQW sample with much higher In content, the EL spectral bandwidth can be almost unchanged with increasing current at the high current range, since a large number of carriers may be captured by the nonradiative recombination centers distributed outside the localized potential traps and the state-filling effect in the localization states is suppressed.

  13. Three-dimensional indium distribution in electron-beam irradiated multiple quantum wells of blue-emitting InGaN/GaN devices

    NASA Astrophysics Data System (ADS)

    Jung, Woo-Young; Seol, Jae-Bok; Kwak, Chan-Min; Park, Chan-Gyung

    2016-03-01

    The compositional distribution of In atoms in InGaN/GaN multiple quantum wells is considered as one of the candidates for carrier localization center, which enhances the efficiency of the light-emitting diodes. However, two challenging issues exist in this research area. First, an inhomogeneous In distribution is initially formed by spinodal decomposition during device fabrication as revealed by transmission electron microscopy. Second, electron-beam irradiation during microscopy causes the compositional inhomogeneity of In to appear as a damage contrast. Here, a systematic approach was proposed in this study: Electron-beam with current density ranging from 0 to 20.9 A/cm2 was initially exposed to the surface regions during microscopy. Then, the electron-beam irradiated regions at the tip surface were further removed, and finally, atom probe tomography was performed to run the samples without beam-induced damage and to evaluate the existence of local inhomegenity of In atoms. We proved that after eliminating the electron-beam induced damage regions, no evidence of In clustering was observed in the blue-emitting InGaN/GaN devices. In addition, it is concluded that the electron-beam induced localization of In atoms is a surface-related phenomenon, and hence spinodal decomposition, which is typically responsible for such In clustering, is negligible for biaxially strained blue-emitting InGaN/GaN devices.

  14. Fractional revivals, multiple-Schrödinger-cat states, and quantum carpets in the interaction of a qubit with N qubits

    NASA Astrophysics Data System (ADS)

    Dooley, Shane; Spiller, Timothy P.

    2014-07-01

    We study the dynamics of a system comprised of a single qubit interacting equally with N qubits (a "spin star" system). Although this model can be solved exactly, the exact solution does not give much intuition for the dynamics of the model. Here, we find an approximation that gives some insight into the dynamics for a particular class of initial spin-coherent states of the N qubits. We find an effective Hamiltonian for the system that is a finite Kerr (one-axis twisting) Hamiltonian for the N +1 qubits. The initial spin-coherent state evolves to spin-squeezed states on short time scales, and to "multiple-Schrödinger-cat" states (superpositions of many spin-coherent states) on longer time scales, a manifestation of the phenomenon of fractional revivals of the initial state. The evolution of the system is visualized with phase-space plots (Q functions) that, when plotted against time, reveal a "quantum carpet" pattern. Of particular interest is the fact that our approximation captures the qualitative features of the model even for small values of N. This suggests the possibility of observing the phenomenon of fractional revival in this model for systems of few qubits.

  15. Measurements and simulations of the optical gain and anti-reflection coating modal reflectivity in quantum cascade lasers with multiple active region stacks

    SciTech Connect

    Bidaux, Y.; Terazzi, R.; Bismuto, A.; Gresch, T.; Blaser, S.; Muller, A.; Faist, J.

    2015-09-07

    We report spectrally resolved gain measurements and simulations for quantum cascade lasers (QCLs) composed of multiple heterogeneous stacks designed for broadband emission in the mid-infrared. The measurement method is first demonstrated on a reference single active region QCL based on a double-phonon resonance design emitting at 7.8 μm. It is then extended to a three-stack active region based on bound-to-continuum designs with a broadband emission range from 7.5 to 10.5 μm. A tight agreement is found with simulations based on a density matrix model. The latter implements exhaustive microscopic scattering and dephasing sources with virtually no fitting parameters. The quantitative agreement is furthermore assessed by measuring gain coefficients obtained by studying the threshold current dependence with the cavity length. These results are particularly relevant to understand fundamental gain mechanisms in complex semiconductor heterostructure QCLs and to move towards efficient gain engineering. Finally, the method is extended to the measurement of the modal reflectivity of an anti-reflection coating deposited on the front facet of the broadband QCL.

  16. Optical properties and resonant modes in GaN/AlGaN and InGaN/GaN multiple quantum well microdisk cavities

    NASA Astrophysics Data System (ADS)

    Dai, Lun; Zhang, Bei; Mair, Robin A.; Zeng, Kecai; Lin, Jinyu; Jigang, Hongxing; Botchkarev, Andrei; Kim, W.; Morkoc, Hadis; Khan, Muhammad A.

    1998-08-01

    Optical resonance modes have been observed in optically pumped microdisk cavities fabricated from 50 angstroms/50 angstroms GaN/AlxGa1-xN (x approximately 0.07) and 45 angstroms/45 angstroms InxGa1-xN/GaN (x approximately 0.15) multiple quantum well structures. Microdisks, approximately 9 micrometers in diameter and regularly spaced every 50 micrometers , were formed by ion beam etch process. Individual disk was pumped from 10 K to 300 K with 290 nm laser pulses focused to a spot size much smaller than the disk diameter. Optical properties of these microdisks have been studied by picosecond time-resolved photoluminescence (PL) spectroscopy. From cw PL emission spectra, optical modes corresponding to (1) the radial mode type with a spacing of 49 - 51 meV (both TE and TM) and (2) the Whispering gallery mode with a spacing of 15 - 16 meV were observed in the GaN-based microdisk cavities. The spacings of these modes are consistent with theoretical calculation. The implications of our results to III-Nitride microdisk lasers are discussed.

  17. Negatively charged excitions (X -) and D - triplet transitions in GaAs/Al 0.3Ga 0.7As multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Ryu, S. R.; Yu, W.-Y.; Fu, L. P.; Jiang, Z. X.; Petrou, A.; McCombe, B. D.; Schaff, W.

    1996-07-01

    From a combination of low-temperature photoluminescence (PL) and far-infrared magnetospectroscopy on several GaAs/AlGaAs multiple quantum well samples with different donor doping (well only, barrier only, both well and barrier), we have identified a recombination line due to negatively charged excitons (X -). We have also studied the effects of excess free electrons in the wells on the X - line. Magneto-Pl for low-density barrier-only doped samples shows both free exciton and X - recombination lines at all values of field studied. However, for more heavily doped samples the behavior is very different. As magnetic field is increased, three distinct features evolve from the broad free carrier recombination lines. At low fields all three features are Landau level recombination lines. At a field corresponding to filling factor v = 2 the lowest energy line undergoes a discontinuous change in slope, and above this field it evolves into the X - line. In related far-infrared magnetospectroscopy studies we have made a clear identification of one of the predicted negative donor ion (D -) triplet transitions.

  18. Temperature dependence of light-output performance of InGaN/GaN multiple-quantum-well light-emitting diodes with various In compositions

    NASA Astrophysics Data System (ADS)

    Huh, Chul; Schaff, William J.; Eastman, Lester F.; Park, Seong-Ju

    2004-01-01

    We have investigated the temperature dependence of electrical and output performance of InGaN/GaN multiple-quantum well (MQW) light-emitting diodes (LEDs) with different indium compositions in the InGaN/GaN MQWs. With increasing In composition in the MQWs, the output performance of the LEDs at room temperature was increased due to a deeper potential barrier for the carriers to escape from the MQWs and the localized energy states caused by a In composition fluctuation in MQWs. However, it was found that the output performance depends on the In composition in InGaN/GaN MQWs with increasing temperature from room temperature. With increasing temperature, the output power for LED with a relatively higher In composition in the MQWs was decreased more rapidly compared to that of LED with a lower In composition in the MQWs due to the increased nonradiation recombination through the high defect densities in the MQWs resulted from the increased accumulation of strain between InGaN well and GaN barrier.

  19. Size effect on negative capacitance at forward bias in InGaN/GaN multiple quantum well-based blue LED

    NASA Astrophysics Data System (ADS)

    Bourim, El-Mostafa; Han, Jeong In

    2016-01-01

    Size effect of InGaN/GaN multiple quantum well (MQW) blue light emitting diodes (LEDs), on electrical characteristics in forward bias voltage at high injection current in light emission regime, is observed to induce a substantial dispersion in the current density and normalized negative capacitance (NC) (i.e., capacitance per chip area). The correction of normalized NC by considering the LED p- n junction series resistance has been found to be independent of chip area size with lateral dimensions ranging from 100 µm × 100 µm to 400 µm × 400 µm. This fact, confirms that the inductive effect which is usually behind the NC apparition is homogeneously and uniformly distributed across the entire device area and hence the dispersive characteristics are not related to local paths. From the characteristics of NC dependence on temperature, frequency and direct current bias, a mechanism based on the electrons/holes charge carriers conductivity difference is proposed to be responsible for the transient electron-hole pair recombination process inducing NC phenomenon. Direct measurement of light emission brightness under modulated frequency demonstrated that modulated light output evolution follows the same behavioral tendency as measured in NC under alternating current signal modulation. Thus it is concluded that the NC is valuable information which would be of practical interest in improving the characteristics and parameters relevant to LED p- n junction internal structure. [Figure not available: see fulltext.

  20. The influence of type-I and type-II triplet multiple quantum well structure on white organic light-emitting diodes

    PubMed Central

    2013-01-01

    We demonstrate high-efficient white organic light-emitting diodes (WOLEDs) based on triplet multiple quantum well (MQW) structure and focus on the influence on WOLEDs through employing different potential barrier materials to form type-I and type-II MQWs, respectively. It is found that type-I MQW structure WOLEDs based on 1,3,5-tris(N-phenyl-benzimidazol-2-yl)benzene as potential barrier layer (PBL) offers high electroluminescent (EL) performance. That is to say, maximum current efficiency and power efficiency are achieved at about 1,000 cd/m2 with 16.4 cd/A and 8.3 lm/W, which increase by 53.3% and 50.9% over traditional three-layer structure WOLEDs, respectively, and a maximum luminance of 17,700 cd/m2 is earned simultaneously. The achievement of high EL performance would be attributed to uniform distribution and better confinement of carriers within the emitting layer (EML). However, when 4,7-diphenyl-1,10-phenanthroline or 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline is used as PBL to form type-II MQW structure, poor EL performance is obtained. We attribute that to improper energy level alignment between the interface of EML/PBL, which leads to incomplete confinement and low recombination efficiency of carriers, a more detailed mechanism was argued. PMID:24341599

  1. Net electron-phonon scattering rates in InN/GaN multiple quantum wells: The effects of an energy dependent acoustic deformation potential

    SciTech Connect

    Xia, H. Patterson, R.; Feng, Y.; Shrestha, S.; Conibeer, G.

    2014-08-11

    The rates of charge carrier relaxation by phonon emission are of substantial importance in the field of hot carrier solar cell, primarily in investigation of mechanisms to slow down hot carrier cooling. In this work, energy and momentum resolved deformation potentials relevant to electron-phonon scattering are computed for wurtzite InN and GaN as well as an InN/GaN multiple quantum well (MQW) superlattice using ab-initio methods. These deformation potentials reveal important features such as discontinuities across the electronic bandgap of the materials and variations over tens of eV. The energy dependence of the deformation potential is found to be very similar for wurtzite nitrides despite differences between the In and Ga pseudopotentials and their corresponding electronic band structures. Charge carrier relaxation by this mechanism is expected to be minimal for electrons within a few eV of the conduction band edge. However, hole scattering at energies more accessible to excitation by solar radiation is possible between heavy and light hole states. Moderate reductions in overall scattering rates are observed in MQW relative to the bulk nitride materials.

  2. Completely transparent ohmic electrode on p-type AlGaN for UV LEDs with core-shell Cu@alloy nanosilk network (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Cai, Duanjun; Wang, Huachun; Huang, Youyang; Wu, Chenping; Chen, Xiaohong; Gao, Na; Wei, Tongbo T.; Wang, Junxi; Li, Shuping; Kang, Junyong

    2016-09-01

    Metal nanowire networks hold a great promise, which have been supposed the only alternative to ITO as transparent electrodes for their excellent performance in touch screen, LED and solar cell. It is well known that the difficulty in making transparent ohmic electrode to p-type high-Al-content AlGaN conducting layer has highly constrained the further development of UV LEDs. On the IWN-2014, we reported the ohmic contact to n, p-GaN with direct graphene 3D-coated Cu nanosilk network and the fabrication of complete blue LED. On the ICNS-2015, we reported the ohmic contact to n-type AlGaN conducting layer with Cu@alloy nanosilk network. Here, we further demonstrate the latest results that a novel technique is proposed for fabricating transparent ohmic electrode to high-Al-content AlGaN p-type conducting layer in UV LEDs using Cu@alloy core-shell nanosilk network. The superfine copper nanowires (16 nm) was synthesized for coating various metals such as Ni, Zn, V or Ti with different work functions. The transmittance showed a high transparency (> 90%) over a broad wavelength range from 200 to 3000 nm. By thermal annealing, ohmic contact was achieved on p-type Al0.5Ga0.5N layer with Cu@Ni nanosilk network, showing clearly linear I-V curve. By skipping the p-type GaN cladding layer, complete UV LED chip was fabricated and successfully lit with bright emission at 276 nm.

  3. Quantum Walk Schemes for Universal Quantum Computation

    NASA Astrophysics Data System (ADS)

    Underwood, Michael S.

    Random walks are a powerful tool for the efficient implementation of algorithms in classical computation. Their quantum-mechanical analogues, called quantum walks, hold similar promise. Quantum walks provide a model of quantum computation that has recently been shown to be equivalent in power to the standard circuit model. As in the classical case, quantum walks take place on graphs and can undergo discrete or continuous evolution, though quantum evolution is unitary and therefore deterministic until a measurement is made. This thesis considers the usefulness of continuous-time quantum walks to quantum computation from the perspectives of both their fundamental power under various formulations, and their applicability in practical experiments. In one extant scheme, logical gates are effected by scattering processes. The results of an exhaustive search for single-qubit operations in this model are presented. It is shown that the number of distinct operations increases exponentially with the number of vertices in the scattering graph. A catalogue of all graphs on up to nine vertices that implement single-qubit unitaries at a specific set of momenta is included in an appendix. I develop a novel scheme for universal quantum computation called the discontinuous quantum walk, in which a continuous-time quantum walker takes discrete steps of evolution via perfect quantum state transfer through small 'widget' graphs. The discontinuous quantum-walk scheme requires an exponentially sized graph, as do prior discrete and continuous schemes. To eliminate the inefficient vertex resource requirement, a computation scheme based on multiple discontinuous walkers is presented. In this model, n interacting walkers inhabiting a graph with 2n vertices can implement an arbitrary quantum computation on an input of length n, an exponential savings over previous universal quantum walk schemes. This is the first quantum walk scheme that allows for the application of quantum error correction

  4. SF6/O2 plasma effects on silicon nitride passivation of AlGaN /GaN high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Meyer, David J.; Flemish, Joseph R.; Redwing, Joan M.

    2006-11-01

    The effects of various plasma and wet chemical surface pretreatments on the electrical characteristics of AlGaN /GaN high electron mobility transistors (HEMTs) passivated with plasma-deposited silicon nitride were investigated. The results of pulsed IV measurements show that samples exposed to various SF6/O2 plasma treatments have markedly better rf dispersion characteristics compared to samples that were either untreated or treated in wet buffered oxide etch prior to encapsulation. The improvement in these characteristics correlates with the reduction of carbon on the semiconductor surface as measured with x-ray photoelectron spectroscopy. HEMT channel sheet resistance was also affected by varying silicon nitride deposition parameters.

  5. Experimental observation of isotropic in-plane spin splitting in GaN /AlGaN two-dimensional electron gas

    NASA Astrophysics Data System (ADS)

    Zhao, Hongming; Liu, Baoli; Guo, Liwei; Tan, Changling; Chen, Hong; Chen, Dongmin

    2007-12-01

    The circular photogalvanic effect (CPGE) was used to study the in-plane-orientation dependent spin splitting in the C(0001)-oriented GaN /AlGaN two-dimensional electron gas (2DEG). The CPGE current induced by the interband transition shows an isotropic in-plane spin splitting in this system at room temperature. The spin relaxation time is found to be 14ps using the time resolved Kerr rotation technique, which is another evidence of the spin splitting in this 2DEG system.

  6. Coaxial In(x)Ga(1-x)N/GaN multiple quantum well nanowire arrays on Si(111) substrate for high-performance light-emitting diodes.

    PubMed

    Ra, Yong-Ho; Navamathavan, R; Park, Ji-Hyeon; Lee, Cheul-Ro

    2013-08-14

    We report the growth of high-quality nonpolar (m-plane) and semipolar (r-plane) multiple quantum well (MQW) nanowires (NWs) for high internal quantum efficiency light emitting diodes (LEDs) without polarization. Highly aligned and uniform In(x)Ga(1-x)N/GaN MQW layers are grown coaxially on the {1-100} sidewalls of hexagonal c-axis n-GaN NWs on Si(111) substrates by a pulsed flow metal-organic chemical vapor deposition (MOCVD) technique. The photoluminescence (PL) measurements reveal that the wavelength and intensity of an MQW structure with various pairs (2-20) are very stable and possess composition-dependent emission ranging from 369 to 600 nm. The cathodoluminescence (CL) spectrum of individual In(x)Ga(1-x)N/GaN MQW NW is dominated by band-edge emission at 369 and 440 nm with a relatively homogeneous profile of parallel alignment. High-resolution transmission electron microscopy (HR-TEM) studies of coaxial InxGa1-xN/GaN MQW NWs measured along the [0001] and [2-1-10] zone axes reveal that the grown NWs are uniform with six nonpolar m-plane facets without any dislocations and stacking faults. The p-GaN/In(x)Ga(1-x)N/GaN MQW/n-GaN NW coaxial LEDs show a current rectification with a sharp onset voltage at 2.65 V in the forward bias. The linear enhancement of power output could be attributed to the elimination of piezoelectric fields in the In(x)Ga(1-x)N/GaN MQW active region. The superior performance of coaxial NW LEDs is observed in comparison with that of thin film LEDs. Overall, the feasibility of obtaining low defect and strain free m-plane coaxial NWs using pulsed MOCVD can be utilized for the realization of high-power LEDs without an efficiency droop. These kinds of coaxial NWs are viable high surface area MQW structures which can be used to enhance the efficiency of LEDs.

  7. Characterization of the absorbance bleaching in AllnAs/AlGaInAs multiple-quantum wells for semiconductor saturable absorbers.

    SciTech Connect

    Wanke, Michael Clement; Cederberg, Jeffrey George; Alliman, Darrell L.; Bender, Daniel A.; Cross, Karen Charlene; Waldmueller, Ines

    2010-05-01

    Semiconductor saturable absorbers (SESAs) introduce loss into a solid-state laser cavity until the cavity field bleaches the absorber producing a high-energy pulse. Multiple quantum wells (MQWs) of AlGaInAs grown lattice-matched to InP have characteristics that make them attractive for SESAs. The band gap can be tuned around the target wavelength, 1064 nm, and the large conduction band offset relative to the AlInAs barrier material helps reduces the saturation fluence, and transparent substrate reduces nonsaturable losses. We have characterized the lifetime of the bleaching process, the modulation depth, the nonsaturable losses, and the saturation fluence associated with SESAs. We compare different growth conditions and structure designs. These parameters give insight into the quality of the epitaxy and effect structure design has on SESA performance in a laser cavity. AlGaInAs MQWs were grown by MOVPE using a Veeco D125 machine using methyl-substituted metal-organics and hydride sources at a growth temperature of 660 C at a pressure of 60 Torr. A single period of the basic SESA design consists of approximately 130 to 140 nm of AlInAs barrier followed by two AlGaInAs quantum wells separated by 10 nm AlInAs. This design places the QWs near the nodes of the 1064-nm laser cavity standing wave. Structures consisting of 10-, 20-, and 30-periods were grown and evaluated. The SESAs were measured at 1064 nm using an optical pump-probe technique. The absorbance bleaching lifetime varies from 160 to 300 nsec. The nonsaturable loss was as much as 50% for structures grown on n-type, sulfur-doped InP substrates, but was reduced to 16% when compensated, Fe-doped InP substrates were used. The modulation depth of the SESAs increased linearly from 9% to 30% with the number of periods. We are currently investigating how detuning the QW transition energy impacts the bleaching characteristics. We will discuss how each of these parameters impacts the laser performance.

  8. A study of dipolar interactions and dynamic processes of water molecules in tendon by 1H and 2H homonuclear and heteronuclear multiple-quantum-filtered NMR spectroscopy.

    PubMed

    Eliav, U; Navon, G

    1999-04-01

    The effect of proton exchange on the measurement of 1H-1H, 1H-2H, and 2H-2H residual dipolar interactions in water molecules in bovine Achilles tendons was investigated using double-quantum-filtered (DQF) NMR and new pulse sequences based on heteronuclear and homonuclear multiple-quantum filtering (MQF). Derivation of theoretical expressions for these techniques allowed evaluation of the 1H-1H and 1H-2H residual dipolar interactions and the proton exchange rate at a temperature of 24 degrees C and above, where no dipolar splitting is evident. The values obtained for these parameters at 24 degrees C were 300 and 50 Hz and 3000 s-1, respectively. The results for the residual dipolar interactions were verified by repeating the above measurements at a temperature of 1.5 degrees C, where the spectra of the H2O molecules were well resolved, so that the 1H-1H dipolar interaction could be determined directly from the observed splitting. Analysis of the MQF experiments at 1.5 degrees C, where the proton exchange was in the intermediate regime for the 1H-2H dipolar interaction, confirmed the result obtained at 24 degrees C for this interaction. A strong dependence of the intensities of the MQF signals on the proton exchange rate, in the intermediate and the fast exchange regimes, was observed and theoretically interpreted. This leads to the conclusion that the MQF techniques are mostly useful for tissues where the residual dipolar interaction is not significantly smaller than the proton exchange rate. Dependence of the relaxation times and signal intensities of the MQF experiments on the orientation of the tendon with respect to the magnetic field was observed and analyzed. One of the results of the theoretical analysis is that, in the fast exchange regime, the signal decay rates in the MQF experiments as well as in the spin echo or CPMG pulse sequences (T2) depend on the orientation as the square of the second-rank Legendre polynomial.

  9. Corrigendum to "Multiple-quantum spin counting in magic-angle-spinning NMR via low-power symmetry-based dipolar recoupling" [J. Magn. Reson. 236 (2013) 31-40

    NASA Astrophysics Data System (ADS)

    Teymoori, Gholamhasan; Pahari, Bholanath; Viswanathan, Elumalai; Edén, Mattias

    2017-03-01

    The authors regret that an inappropriate NMR data processing, not known to all authors at the time of publication, was used to produce the multiple-quantum coherence (MQC) spin counting data presented in our article: this lead to artificially enhanced results, particularly concerning those obtained at long MQC excitation intervals (τexc). Here we reproduce Figs. 4-7 with correctly processed data.

  10. UV photoemission study of heteroepitaxial AlGaN films grown on 6H-SiC

    NASA Astrophysics Data System (ADS)

    Benjamin, M. C.; Bremser, M. D.; Weeks, T. W.; King, S. W.; Davis, R. F.; Nemanich, R. J.

    1996-09-01

    This study presents results of UV photoemission measurements of the surface and interface properties of heteroepitaxial AlGaN on 6H-SiC. Previous results have demonstrated a negative electron affinity of AlN on 6H-SiC. In this study Al xGa 1- xN alloy films were grown by organometallic vapor phase epitaxy (OMVPE) and doped with silicon. The analytical techniques included UPS, Auger electron spectroscopy, and LEED. All analysis took place in an integrated UHV transfer system which included the analysis techniques, a surface processing chamber and a gas source MBE. The OMVPE alloy samples were transported in air to the surface characterization system while the AlN and GaN investigations were prepared in situ. The surface electronic states were characterized by surface normal UV photoemission to determine whether the electron affinity was positive or negative. Two aspects of the photoemission distinguish a surface that exhibits a NEA: (1) the spectrum exhibits a sharp peak in the low kinetic energy region, and (2) the width of the spectrum is hv - Eg. The in situ prepared AlN samples exhibited the characteristics of a NEA while the GaN and Al 0.13Ga 0.87N samples did not. The Al 0.55Ga 0.45N sample shows a low positive electron affinity. Annealing of the sample to > 400°C resulted in the disappearance of the sharp emission features, and this effect was related to contaminant effects on the surface. The results suggest the potential of nitride based cold cathode electron emitters.

  11. Quantum random number generators

    NASA Astrophysics Data System (ADS)

    Herrero-Collantes, Miguel; Garcia-Escartin, Juan Carlos

    2017-01-01

    Random numbers are a fundamental resource in science and engineering with important applications in simulation and cryptography. The inherent randomness at the core of quantum mechanics makes quantum systems a perfect source of entropy. Quantum random number generation is one of the most mature quantum technologies with many alternative generation methods. This review discusses the different technologies in quantum random number generation from the early devices based on radioactive decay to the multiple ways to use the quantum states of light to gather entropy from a quantum origin. Randomness extraction and amplification and the notable possibility of generating trusted random numbers even with untrusted hardware using device-independent generation protocols are also discussed.

  12. Quasi-Fermi level splitting evaluation based on electroluminescence analysis in multiple quantum-well solar cells for investigating cell performance under concentrated light

    NASA Astrophysics Data System (ADS)

    Inoue, Tomoyuki; Toprasertpong, Kasidit; Delamarre, Amaury; Watanabe, Kentaroh; Paire, Myriam; Lombez, Laurent; Guillemoles, Jean-François; Sugiyama, Masakazu; Nakano, Yoshiaki

    2016-03-01

    Insertion of InGaAs/GaAsP strain-balanced multiple quantum wells (MQWs) into i-regions of GaAs p-i-n solar cells show several advantages against GaAs bulk p-i-n solar cells. Particularly under high-concentration sunlight condition, enhancement of the open-circuit voltage with increasing concentration ratio in thin-barrier MQW cells has been reported to be more apparent than that in GaAs bulk cells. However, investigation of the MQW cell mechanisms in terms of I-V characteristics under high-concentration sunlight suffers from the increase in cell temperature and series resistance. In order to investigate the mechanism of the steep enhancement of open-circuit voltage in MQW cells under high-concentration sunlight without affected by temperature, the quasi-Fermi level splitting was evaluated by analyzing electroluminescence (EL) from a cell. Since a cell under current injection with a density Jinjhas similar excess carrier density to a cell under concentrated sunlight with an equivalent short-circuit current Jsc = Jinj, EL measurement with varied Jinj can approximately evaluate a cell performance under a variety of concentration ratio. In addition to the evaluation of quasi-Fermi level splitting, the external luminescence efficiency was also investigated with the EL measurement. The MQW cells showed higher external luminescence efficiency than the GaAs reference cells especially under high-concentration condition. The results suggest that since the MQW region can trap and confine carriers, the localized excess carriers inside the cells make radiative recombination more dominant.

  13. Modulating dual-wavelength multiple quantum wells in white light emitting diodes to suppress efficiency droop and improve color rendering index

    SciTech Connect

    Zhao, Yukun; Wang, Shuai; Zheng, Min; Ding, Wen; Yun, Feng; Su, Xilin; Yang, Xiangrong; Liu, Shuo; Guo, Maofeng; Zhang, Ye

    2015-10-14

    In this paper, gallium nitride (GaN) based white light-emitting diodes (WLEDs) with modulated quantities of blue (In{sub 0.15}Ga{sub 0.85}N) quantum wells (QWs) and cyan QWs (In{sub 0.18}Ga{sub 0.82}N) in multiple QW (MQW) structures have been investigated numerically and experimentally. It is demonstrated that the optical performance of LEDs is sensitive to the quantities of cyan QWs in dual-wavelength MQW structures. Compared to the LEDs with respective 0, 4, and 8 cyan QWs (12 QWs in total), the optical performance of the sample with 6 cyan QWs is the best. The deterioration of the optical performance in the sample with less (4 pairs) cyan QWs or more (8 pairs) cyan QWs than 6 cyan QWs may be ascribed to weakened reservoir effect or more defects induced. Compared to conventional blue LEDs (12 blue QWs), the sample with 6 cyan QWs could effectively suppress the efficiency droop (the experimental droop ratio decreases from 50.3% to 39.5% at 80 A/cm{sup 2}) and significantly improve the color rendering index (CRI, increases from 66.4 to 77.0) simultaneously. We attribute the droop suppression to the strengthened reservoir effect and carrier confinement of deeper QWs (higher indium composition) incorporated in the dual-wavelength MQW structures, which lead to the better hole spreading and enhanced radiative recombination. Meanwhile, the remarkable experimental CRI improvement may result from the wider full-width at half-maximum of electroluminescence spectra and higher cyan intensity in WLED chips with dual-wavelength MQW structures.

  14. Impact of wet-oxidized Al2O3/AlGaN interface on AlGaN/GaN 2-DEGs

    NASA Astrophysics Data System (ADS)

    Meer, Mudassar; Majety, Sridhar; Takhar, Kuldeep; Ganguly, Swaroop; Saha, Dipankar

    2017-04-01

    We investigated the impact of wet-oxidation of AlGaN in an AlGaN/GaN heterostructure by selectively probing the metal/AlGaN interface. The two-dimensional electron gas (2-DEG) characteristics show improved mobility with increasing oxidation time and Al2O3 thickness. The change is attributed to an interplay of the interface trap density (D it) and the oxide thickness. D it is found to reduce progressively for thicker gate oxides as determined by selectively probing the Al2O3/AlGaN interface and employing frequency dependent capacitance and conductance spectroscopy on these devices. The energies of the interface traps are found to be in the range of 0.35–0.45 eV below the conduction band edge. The D it is found to reduce from 2 × 1013 cm‑2 eV‑1 for 2.3 nm of Al2O3 to 5 × 1012 cm‑2 eV‑1 for 16 nm of Al2O3. Contrary to the earlier reports of increased 2-DEG electron density, the primary advantage is found to be a reduction in Dit leading to an increased electron mobility from 1730 to 2800 cm2V‑1s‑1.

  15. Persistent photoconductivity in AlGaN/GaN heterojunction channels caused by the ionization of deep levels in the AlGaN barrier layer

    SciTech Connect

    Murayama, H.; Akiyama, Y.; Niwa, R.; Sakashita, H.; Sakaki, H.; Kachi, T.; Sugimoto, M.

    2013-12-04

    Time-dependent responses of drain current (I{sub d}) in an AlGaN/GaN HEMT under UV (3.3 eV) and red (2.0 eV) light illumination have been studied at 300 K and 250 K. UV illumination enhances I{sub d} by about 10 %, indicating that the density of two-dimensional electrons is raised by about 10{sup 12} cm{sup −2}. When UV light is turned off at 300 K, a part of increased I{sub d} decays quickly but the other part of increment is persistent, showing a slow decay. At 250 K, the majority of increment remains persistent. It is found that such a persistent increase of I{sub d} at 250 K can be partially erased by the illumination of red light. These photo-responses are explained by a simple band-bending model in which deep levels in the AlGaN barrier get positively charged by the UV light, resulting in a parabolic band bending in the AlGaN layer, while some potion of those deep levels are neutralized by the red light.

  16. Influence of high-temperature AlN intermediate layer on the optical properties of MOCVD grown AlGaN films

    NASA Astrophysics Data System (ADS)

    Xie, Deng; Qiu, Zhi Ren; Liu, Yao; Talwar, Devki N.; Wan, Lingyu; Zhang, Xiong; Mei, Ting; Ferguson, Ian T.; Feng, Zhe Chuan

    2017-02-01

    By combining spectroscopic ellipsometry (SE) and optical transmission (OT) characterization methods we have systematically investigated the influence of AlN intermediate layer and AlN transition layer on the optical properties of AlGaN epilayers grown on sapphire by metalorganic chemical vapor deposition (MOCVD) method. Most dielectric functions of III-nitrides obtained by different research groups show significant band-tail absorption—which is not anticipated for such a direct band gap material. The dielectric functions are studied for a series of AlGaN/AlN/Al2O3 structures, with a four-layer model taking into account both high temperature grown AlN layer and low temperature grown AlN layer. The results obtained by fitting the optical parameters to experimental data show that the band-tail absorption should originate from the transition layer. AlGaN film without high temperature AlN epilayer exhibited a redshift of band gap around 0.24 eV.

  17. Semi-polar (11-22) AlGaN on overgrown GaN on micro-rod templates: Simultaneous management of crystal quality improvement and cracking issue

    NASA Astrophysics Data System (ADS)

    Li, Z.; Jiu, L.; Gong, Y.; Wang, L.; Zhang, Y.; Bai, J.; Wang, T.

    2017-02-01

    Thick and crack-free semi-polar (11-22) AlGaN layers with various high Al compositions have been achieved by means of growth on the top of nearly but not yet fully coalesced GaN overgrown on micro-rod templates. The range of the Al composition of up to 55.7% was achieved, corresponding to an emission wavelength of up to 270 nm characterised by photoluminescence at room temperature. X-ray diffraction (XRD) measurements show greatly improved crystal quality as a result of lateral overgrowth compared to the AlGaN counterparts on standard planar substrates. The full width at half maximums of the XRD rocking curves measured along the [1-100]/[11-2-3] directions (the two typical orientations for characterizing the crystal quality of (11-22) AlGaN) are 0.2923°/0.2006° for 37.8% Al and 0.3825°/0.2064° for 55.7% Al, respectively, which have never been achieved previously. Our calculation based on reciprocal space mapping measurements has demonstrated significant strain relaxation in the AlGaN as a result of utilising the non-coalesced GaN underneath, contributing to the elimination of any cracks. The results presented have demonstrated that our overgrowth technique can effectively manage strain and improve crystal quality simultaneously.

  18. High-quality Ga-rich AlGaN grown on trapezoidal patterned GaN template using super-short period AlN/GaN superlattices for rapid coalescence

    NASA Astrophysics Data System (ADS)

    Xiao, Ming; Zhang, Jincheng; Hao, Yue

    2017-04-01

    High quality crack-free Ga-rich Al26.1Ga73.9N film was grown on trapezoidal patterned GaN template (TPGT) by low-pressure metalorganic chemical vapor deposition. The super-short period AlN/GaN superlattices structure was used to grow AlGaN material instead of the direct growth method. We obtained large lateral to vertical growth rate ratio larger than 4.79. The growth rate of GaN layer was proved to be the decisive factor of the lateral to vertical growth rate ratio. Moreover, for AlGaN growth, we found that that the TPGT is more beneficial to suppression of crack and relaxation of biaxial tensile strain than planar GaN template. The obtained results demonstrate that, comparing with AlGaN grown on planar GaN template, the threading dislocation density in AlGaN grown on TPGT was reduced from 2×109 cm-2 to 2×108 cm-2.

  19. Inductively coupled plasma–reactive ion etching of c- and a-plane AlGaN over the entire Al composition range: Effect of BCl{sub 3} pretreatment in Cl{sub 2}/Ar plasma chemistry

    SciTech Connect

    Shah, Amit P.; Laskar, Masihhur R.; Azizur Rahman, A.; Gokhale, Maheshwar R.; Bhattacharya, Arnab

    2013-11-15

    Inductively coupled plasma (ICP)–reactive ion etching (RIE) patterning is a standard processing step for UV and optical photonic devices based on III-nitride materials. There is little research on ICP-RIE of high Al-content AlGaN alloys and for nonpolar nitride orientations. The authors present a comprehensive study of the ICP-RIE of c- and a-plane AlGaN in Cl{sub 2}/Ar plasma over the entire Al composition range. The authors find that the etch rate decreases in general with increasing Al content, with different behavior for c- and a-plane AlGaN. They also study the effect of BCl{sub 3} deoxidizing plasma pretreatment. An ICP deoxidizing BCl{sub 3} plasma with the addition of argon is more efficient in removal of surface oxides from Al{sub x}Ga{sub 1−x}N than RIE alone. These experiments show that Al{sub x}Ga{sub 1−x}N etching is affected by the higher binding energy of AlN and the higher affinity of oxygen to aluminum compared to gallium, with oxides on a-plane AlGaN more difficult to etch as compared to oxides on c-plane AlGaN, specifically for high Al composition materials. The authors achieve reasonably high etch rate (∼350 nm/min) for high Al-content materials with a smooth surface morphology at a low DC bias of ∼−45 VDC.

  20. Intermixing of InGaAs/GaAs Quantum Well Using Multiple Cycles Annealing Cu-doped SiO2

    SciTech Connect

    Hongpinyo, V; Ding, Y H; Dimas, C E; Wang, Y; Ooi, B S; Qiu, W; Goddard, L L; Behymer, E M; Cole, G D; Bond, T C

    2008-06-11

    The authors investigate the effect of intermixing in InGaAs/GaAs quantum well structure using Cu-doped SiO{sub 2}. The incorporation of Cu into the silica film yields larger bandgap shift than typical impurity-free vacancy diffusion (IFVD) method at a lower activation temperature. We also observe enhancement of the photoluminescence (PL) signal from the intermixed InGaAs/GaAs quantum well structure after being cycle-annealed at 850 C.