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Sample records for algan multiple quantum

  1. Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes

    SciTech Connect

    Mehnke, Frank Kuhn, Christian; Guttmann, Martin; Reich, Christoph; Kolbe, Tim; Rass, Jens; Wernicke, Tim; Kueller, Viola; Knauer, Arne; Lapeyrade, Mickael; Einfeldt, Sven; Weyers, Markus; Kneissl, Michael

    2014-08-04

    The design and Mg-doping profile of AlN/Al{sub 0.7}Ga{sub 0.3}N electron blocking heterostructures (EBH) for AlGaN multiple quantum well (MQW) light emitting diodes (LEDs) emitting below 250 nm was investigated. By inserting an AlN electron blocking layer (EBL) into the EBH, we were able to increase the quantum well emission power and significantly reduce long wavelength parasitic luminescence. Furthermore, electron leakage was suppressed by optimizing the thickness of the AlN EBL while still maintaining sufficient hole injection. Ultraviolet (UV)-C LEDs with very low parasitic luminescence (7% of total emission power) and external quantum efficiencies of 0.19% at 246 nm have been realized. This concept was applied to AlGaN MQW LEDs emitting between 235 nm and 263 nm with external quantum efficiencies ranging from 0.002% to 0.93%. After processing, we were able to demonstrate an UV-C LED emitting at 234 nm with 14.5 μW integrated optical output power and an external quantum efficiency of 0.012% at 18.2 A/cm{sup 2}.

  2. Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells

    SciTech Connect

    Li, Xiaohang E-mail: dupuis@gatech.edu; Xie, Hongen; Ponce, Fernando A.; Ryou, Jae-Hyun; Detchprohm, Theeradetch; Dupuis, Russell D. E-mail: dupuis@gatech.edu

    2015-12-14

    We demonstrated onset of deep-ultraviolet (DUV) surface stimulated emission (SE) from c-plane AlGaN multiple-quantum well (MQW) heterostructures grown on a sapphire substrate by optical pumping at room temperature. The onset of SE became observable at a pumping power density of 630 kW/cm{sup 2}. Spectral deconvolution revealed superposition of a linearly amplified spontaneous emission peak at λ ∼ 257.0 nm with a full width at half maximum (FWHM) of ∼12 nm and a superlinearly amplified SE peak at λ ∼ 260 nm with a narrow FWHM of less than 2 nm. In particular, the wavelength of ∼260 nm is the shortest wavelength of surface SE from III-nitride MQW heterostructures to date. Atomic force microscopy and scanning transmission electron microscopy measurements were employed to investigate the material and structural quality of the AlGaN heterostructures, showing smooth surface and sharp layer interfaces. This study offers promising results for AlGaN heterostructures grown on sapphire substrates for the development of DUV vertical cavity surface emitting lasers (VCSELs)

  3. Improved characteristics of ultraviolet AlGaN multiple-quantum-well laser diodes with step-graded quantum barriers close to waveguide layers

    NASA Astrophysics Data System (ADS)

    Cai, Xuefen; Li, Shuping; Kang, Junyong

    2016-09-01

    Ultraviolet AlGaN multiple-quantum-well laser diodes (LDs) with step-graded quantum barriers (QBs) instead of conventional first and last QBs close to waveguide layers are proposed. The characteristics of this type of laser diodes are numerically investigated by using the software PICS3D and it is found that the performances of these LDs are greatly improved. The results indicates that the structure with step-graded QBs exhibits higher output light power, slope efficiency and emission intensity, as well as lower series resistance and threshold current density under the identical condition, compared with conventional LD structure.

  4. On the increased efficiency in InGaN-based multiple quantum wells emitting at 530-590 nm with AlGaN interlayers

    NASA Astrophysics Data System (ADS)

    Koleske, D. D.; Fischer, A. J.; Bryant, B. N.; Kotula, P. G.; Wierer, J. J.

    2015-04-01

    InGaN/AlGaN/GaN-based multiple quantum wells (MQWs) with AlGaN interlayers (ILs) are investigated, specifically to examine the fundamental mechanisms behind their increased radiative efficiency at wavelengths of 530-590 nm. The AlzGa1-zN (z~0.38) IL is ~1-2 nm thick, and is grown after and at the same growth temperature as the ~3 nm thick InGaN quantum well (QW). This is followed by an increase in temperature for the growth of a ~10 nm thick GaN barrier layer. The insertion of the AlGaN IL within the MQW provides various benefits. First, the AlGaN IL allows for growth of the InxGa1-xN QW well below typical growth temperatures to achieve higher x (up to~0.25). Second, annealing the IL capped QW prior to the GaN barrier growth improves the AlGaN IL smoothness as determined by atomic force microscopy, improves the InGaN/AlGaN/GaN interface quality as determined from scanning transmission electron microscope images and x-ray diffraction, and increases the radiative efficiency by reducing non-radiative defects as determined by time-resolved photoluminescence measurements. Finally, the AlGaN IL increases the spontaneous and piezoelectric polarization induced electric fields acting on the InGaN QW, providing an additional red-shift to the emission wavelength as determined by Schrodinger-Poisson modeling and fitting to the experimental data. The relative impact of increased indium concentration and polarization fields on the radiative efficiency of MQWs with AlGaN ILs is explored along with implications to conventional longer wavelength emitters.

  5. High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

    SciTech Connect

    Bryan, Zachary Bryan, Isaac; Sitar, Zlatko; Collazo, Ramón; Xie, Jinqiao; Mita, Seiji

    2015-04-06

    The internal quantum efficiency (IQE) of Al{sub 0.55}Ga{sub 0.45}N/AlN and Al{sub 0.55}Ga{sub 0.45}N/Al{sub 0.85}Ga{sub 0.15}N UVC MQW structures was analyzed. The use of bulk AlN substrates enabled us to undoubtedly distinguish the effect of growth conditions, such as V/III ratio, on the optical quality of AlGaN based MQWs from the influence of dislocations. At a high V/III ratio, a record high IQE of ∼80% at a carrier density of 10{sup 18 }cm{sup −3} was achieved at ∼258 nm. The high IQE was correlated with the decrease of the non-radiative coefficient A and a reduction of midgap defect luminescence, all suggesting that, in addition to dislocations, point defects are another major factor that strongly influences optical quality of AlGaN MQW structures.

  6. Optical polarization control of photo-pumped stimulated emissions at 238 nm from AlGaN multiple-quantum-well laser structures on AlN substrates

    NASA Astrophysics Data System (ADS)

    Lachab, Mohamed; Sun, WenHong; Jain, Rakesh; Dobrinsky, Alex; Gaevski, Mikhail; Rumyantsev, Sergey; Shur, Michael; Shatalov, Max

    2017-01-01

    We demonstrate the capability to control the optical polarization of room-temperature stimulated emissions (SEs) at 238-239 nm from optically pumped AlGaN multiple-quantum-well (MQW) heterostructures on bulk AlN. The results of structural and optical characterizations provided evidence that altering the strain state in the pseudomorphically grown MQW laser structures enabled the switching of the polarization direction of the SE from predominantly transverse electric (TE) at 238 nm to predominantly transverse magnetic (TM) at 239 nm. The SE observed at 238 nm represents the shortest peak wavelength with TE polarization yet reported for AlGaN materials grown on any type of substrate.

  7. Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate

    SciTech Connect

    Li, Xiao-Hang E-mail: dupuis@gatech.edu; Kao, Tsung-Ting; Satter, Md. Mahbub; Shen, Shyh-Chiang; Yoder, P. Douglas; Detchprohm, Theeradetch; Dupuis, Russell D. E-mail: dupuis@gatech.edu; Wei, Yong O.; Wang, Shuo; Xie, Hongen; Fischer, Alec M.; Ponce, Fernando A.

    2015-01-26

    We demonstrate transverse-magnetic (TM) dominant deep-ultraviolet (DUV) stimulated emission from photo-pumped AlGaN multiple-quantum-well lasers grown pseudomorphically on an AlN/sapphire template by means of photoluminescence at room temperature. The TM-dominant stimulated emission was observed at wavelengths of 239, 242, and 243 nm with low thresholds of 280, 250, and 290 kW/cm{sup 2}, respectively. In particular, the lasing wavelength of 239 nm is shorter compared to other reports for AlGaN lasers grown on foreign substrates including sapphire and SiC. The peak wavelength difference between the transverse-electric (TE)-polarized emission and TM-polarized emission was approximately zero for the lasers in this study, indicating the crossover of crystal-field split-off hole and heavy-hole valence bands. The rapid variation of polarization between TE- and TM-dominance versus the change in lasing wavelength from 243 to 249 nm can be attributed to a dramatic change in the TE-to-TM gain coefficient ratio for the sapphire-based DUV lasers in the vicinity of TE-TM switch.

  8. Uneven AlGaN multiple quantum well for deep-ultraviolet LEDs grown on macrosteps and impact on electroluminescence spectral output

    NASA Astrophysics Data System (ADS)

    Kaneda, Michiko; Pernot, Cyril; Nagasawa, Yosuke; Hirano, Akira; Ippommatsu, Masamichi; Honda, Yoshio; Amano, Hiroshi; Akasaki, Isamu

    2017-06-01

    AlGaN-based LEDs (λ < 300 nm) fabricated on n-AlGaN templates with a threading dislocation density larger than 5 × 108/cm2, which were grown on (0001) sapphire with a 1.0° miscut relative to the m-plane, showed external quantum efficiencies (EQEs) of 3.5, 3.9, 6.1, and 6.0% at 266, 271, 283, and 298 nm, respectively. These EQE values reveal significantly high internal quantum efficiencies (IQEs). This performance was obtained using an uneven multiple quantum well (MQW) grown on the AlGaN template with macrosteps having height larger than the well thickness. The electroluminescence spectra of the fabricated LEDs using this MQW structure shifts to a longer wavelength compared with those on sapphire with a miscut angle of 0.3° relative to the m-plane. Furthermore, the LEDs with this MQW show no deleterious effect on the lifetime, broader electroluminescence spectral widths, and higher output powers when using sapphire with a miscut of 1.0°.

  9. Room-temperature deep-ultraviolet lasing at 241.5 nm of AlGaN multiple-quantum-well laser

    NASA Astrophysics Data System (ADS)

    Takano, Takayoshi; Narita, Yoshinobu; Horiuchi, Akihiko; Kawanishi, Hideo

    2004-05-01

    Room-temperature deep-ultraviolet lasing of AlxGa1-xN multiple-quantum-well lasers with an Al composition x of 0.66 was achieved at 241.5 nm under pulsed optical pumping. The threshold pumping power was approximately 1200 kW/cm2 at room temperature. The shortest lasing wavelength was 231.8 nm at 20 K. The laser structure was grown on a high-quality AlN layer, which was grown on a 4H-SiC substrate by inserting an AlN/GaN multibuffer-layer structure between the substrate and the AlN layer. Temperature dependence of lasing wavelength was also estimated to be 0.01 and 0.03 nm/K in the temperature region from 20 to 150 K and from 160 K to room temperature, respectively. The laser cavity was made of a cleaved facet of AlGaN epitaxial layers and a SiC substrate. For this purpose, it was necessary to polish the wafer to a thickness of less than 100 μm. The optimal wafer thickness for cleaving in our experiments was 60-70 μm.

  10. Enhancing light coupling and emission efficiencies of AlGaN thin film and AlGaN/GaN multiple quantum wells with periodicity-wavelength matched nanostructure array.

    PubMed

    Guo, Wei; Yang, Zhenhai; Li, Junmei; Yang, Xi; Zhang, Yun; Wang, Junxi; Chee, Kuan W A; Gao, Pingqi; Ye, Jichun

    2017-10-04

    Poor light extraction efficiency (LEE) has been one of the major challenges responsible for the low external quantum efficiency of AlGaN-based ultraviolet light emitting Diodes (UV-LEDs). In this study, AlGaN nanostructure arrays were fabricated using a large-scale nanosphere self-assembly technique followed by reactive ion etching, and the transmission property of the AlGaN thin film and the photoluminescence (PL) behavior of AlGaN/GaN multiple-quantum-wells (MQWs) were investigated. A 90% light transmission value was obtained for the AlGaN thin film and a 2.5-fold increase in the band edge luminescence of the MQWs were obtained with an optimized nanostructure periodicity. Essentially, a general rule of periodicity-MQW emission wavelength matching criteria-was provided. Both the light transmission properties of the Al0.55Ga0.45N/AlN/sapphire thin film and the photoluminescence (PL) behavior of the AlGaN/GaN MQWs contribute to an improved understanding of the light extraction mechanism of PhC patterned UV-LEDs. Raman spectra also demonstrated the strain relaxation inside the MQW after nanostructure fabrication and thermal annealing. This study provides a pathway towards higher efficiency UV-LEDs with the help of a periodicity-wavelength matched nanostructure array.

  11. The effect of surface cleaning on quantum efficiency in AlGaN photocathode

    NASA Astrophysics Data System (ADS)

    Hao, Guanghui; Zhang, Yijun; Jin, Muchun; Feng, Cheng; Chen, Xinlong; Chang, Benkang

    2015-01-01

    To improve the quantum efficiency of AlGaN photocathode, various surfaces cleaning techniques for the removal of alumina and carbon from AlGaN photocathode surface were investigated. The atomic compositions of AlGaN photocathode structure and surface were measured by the X-ray photoelectron spectroscopy and Ar+ ion sputtering. It is found that the boiling KOH solution and the mixture of sulfuric acid and hydrogen peroxide, coupled with the thermal cleaning at 850 °C can effectively remove the alumina and carbon from the AlGaN photocathode surface. The quantum efficiency of AlGaN photocathode is improved to 35.1% at 240 nm, an increase of 50% over the AlGaN photocathode chemically cleaned by only the mixed solution of sulfuric acid and hydrogen peroxide and thermally cleaned at 710 °C.

  12. Low density GaN quantum dots on AlGaN

    NASA Astrophysics Data System (ADS)

    Pakuł, K.

    A new method of the growth of low-density GaN quantum dots on AlGaN by MOVPE is reported. The method bases on in-situ etching of the AlGaN surface in the presence of silane (SiH4) and subsequent growth of randomly nucleated GaN nano-crystallites. Investigation of successive growth stages with atomic force microscopy (AFM) shows that density of the GaN crystallites is of the order of 108 cm-2. Micro-photoluminescence (µPL) measurements show sharp emission lines originating from single quantum dots without any artificial masks or mesa structures. This gave unique possibility for advanced studies on optical and electrical properties of single GaN quantum dots in AlGaN.

  13. Over 1 W record-peak-power operation of a 338 nm AlGaN multiple-quantum-well laser diode on a GaN substrate

    NASA Astrophysics Data System (ADS)

    Taketomi, Hiroyuki; Aoki, Yuta; Takagi, Yasufumi; Sugiyama, Atsushi; Kuwabara, Masakazu; Yoshida, Harumasa

    2016-05-01

    We have demonstrated the high-peak-power operation of an AlGaN-based ultraviolet laser diode (UV-LD) with a lasing wavelength of 338.6 nm. The UV-LD structure was fabricated on a bulk GaN(0001) substrate. The broad-area and vertical conductive structure of the UV-LD, whose ridge width and cavity length were 50 and 600 µm, respectively, was employed. The threshold current density and differential external quantum efficiency were estimated to be 38.9 kA/cm2 and 8.5%, respectively. The characteristic temperature of threshold current was estimated to be 119 K, and the temperature dependence of lasing wavelength was obtained to be 0.033 nm K-1. A peak power of over 1 W has been achieved in 338.6 nm under pulsed operation at room temperature, which is the highest peak power ever obtained for AlGaN-based UV-LDs.

  14. Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes

    NASA Astrophysics Data System (ADS)

    Reich, Christoph; Guttmann, Martin; Feneberg, Martin; Wernicke, Tim; Mehnke, Frank; Kuhn, Christian; Rass, Jens; Lapeyrade, Mickael; Einfeldt, Sven; Knauer, Arne; Kueller, Viola; Weyers, Markus; Goldhahn, Rüdiger; Kneissl, Michael

    2015-10-01

    The optical polarization of emission from ultraviolet (UV) light emitting diodes (LEDs) based on (0001)-oriented AlxGa1-xN multiple quantum wells (MQWs) has been studied by simulations and electroluminescence measurements. With increasing aluminum mole fraction in the quantum well x, the in-plane intensity of transverse-electric (TE) polarized light decreases relative to that of the transverse-magnetic polarized light, attributed to a reordering of the valence bands in AlxGa1-xN. Using k ṡ p theoretical model calculations, the AlGaN MQW active region design has been optimized, yielding increased TE polarization and thus higher extraction efficiency for bottom-emitting LEDs in the deep UV spectral range. Using (i) narrow quantum wells, (ii) barriers with high aluminum mole fractions, and (iii) compressive growth on patterned aluminum nitride sapphire templates, strongly TE-polarized emission was observed at wavelengths as short as 239 nm.

  15. Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes

    SciTech Connect

    Reich, Christoph Guttmann, Martin; Wernicke, Tim; Mehnke, Frank; Kuhn, Christian; Feneberg, Martin; Goldhahn, Rüdiger; Rass, Jens; Kneissl, Michael; Lapeyrade, Mickael; Einfeldt, Sven; Knauer, Arne; Kueller, Viola; Weyers, Markus

    2015-10-05

    The optical polarization of emission from ultraviolet (UV) light emitting diodes (LEDs) based on (0001)-oriented Al{sub x}Ga{sub 1−x}N multiple quantum wells (MQWs) has been studied by simulations and electroluminescence measurements. With increasing aluminum mole fraction in the quantum well x, the in-plane intensity of transverse-electric (TE) polarized light decreases relative to that of the transverse-magnetic polarized light, attributed to a reordering of the valence bands in Al{sub x}Ga{sub 1−x}N. Using k ⋅ p theoretical model calculations, the AlGaN MQW active region design has been optimized, yielding increased TE polarization and thus higher extraction efficiency for bottom-emitting LEDs in the deep UV spectral range. Using (i) narrow quantum wells, (ii) barriers with high aluminum mole fractions, and (iii) compressive growth on patterned aluminum nitride sapphire templates, strongly TE-polarized emission was observed at wavelengths as short as 239 nm.

  16. Deep-ultraviolet polychromatic emission from three-dimensionally structured AlGaN quantum wells

    NASA Astrophysics Data System (ADS)

    Kataoka, Ken; Funato, Mitsuru; Kawakami, Yoichi

    2017-03-01

    Three-dimensional (3D) AlGaN/AlN quantum wells (QWs) were fabricated on trench-patterned AlN templates using a regrowth technique based on metalorganic vapor phase epitaxy. The 3D structures are composed of planar (0001) facets, \\{ 1\\bar{1}01\\} facets, and misoriented (0001) planes with bunched steps. Cathodoluminescence spectroscopy revealed double-peaked deep-ultraviolet (DUV) emissions: the shorter-wavelength emission was attributed to the (0001) facets, whereas the longer-wavelength emission arose from bunched step structures located around the bottom corner of the AlN trench, a region in which the AlGaN QWs possessed a relatively high Ga concentration and a thick well width compared with planar (0001) QWs.

  17. Enhanced photoluminescence efficiency in AlGaN quantum wells with gradient-composition AlGaN barriers

    NASA Astrophysics Data System (ADS)

    Shevchenko, E. A.; Nechaev, D. V.; Jmerik, V. N.; Kaibyshev, V. Kh; Ivanov, S. V.; Toropov, A. A.

    2016-08-01

    We present photoluminescence studies of AIxGa1-xN/AlyGa1-yN (y = x+0.3) quantum well (QW) heterostructures with graded AI content in barrier layers, emitting in the range 285-315 nm. The best-established internal quantum efficiency of the QW emission is as high as 81% at 300 K, owing to enhanced activation energy of charge carriers and exciton binding energy in the QW heterostructure with optimized design.

  18. Coulomb correlation effects and density dependence of radiative recombination rates in polar AlGaN quantum wells

    NASA Astrophysics Data System (ADS)

    Rupper, Greg; Rudin, Sergey; Bertazzi, Francesco; Garrett, Gregory; Wraback, Michael

    2013-03-01

    AlGaN narrow quantum wells are important elements of deep-ultraviolet light emitting devices. The electron-hole radiative recombination rates are important characteristics of these nanostructures. In this work we evaluated their dependence on carrier density and lattice temperature and compared our theoretical results with the experimentally determined radiative lifetimes in the c-plane grown AlGaN quantum wells. The bands were determined in the k .p approximation for a strained c-plane wurtzite quantum well and polarization fields were included in the model. In order to account for Coulomb correlations at relatively high densities of photo-excited electron-hole plasma and arbitrary temperature, we employed real-time Green's function formalism with self-energies evaluated in the self-consistent T-matrix approximation. The luminescence spectrum was obtained from the susceptibility by summing over scattering in-plane directions and polarization states. The recombination coefficient was obtained from the integrated photo-luminescence. The density dependence of the radiative recombination rate shows effects of strong screening of the polarization electric field at high photo-excitation density.

  19. Performance improvement of AlGaN-based deep-ultraviolet light-emitting diodes via asymmetric step-like AlGaN quantum wells

    NASA Astrophysics Data System (ADS)

    Lu, Lin; Wan, Zhi; Xu, FuJun; Wang, XinQiang; Lv, Chen; Shen, Bo; Jiang, Ming; Chen, QiGong

    2017-04-01

    Characteristics of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) with light-emitting wavelength around 265 nm via step-like AlGaN quantum wells (QWs) have been investigated. Simulation approach yields a result that, there is significant enhancement of light output power (LOP) for DUV-LEDs with two-layer step-like AlGaN QWs compared to that with conventional one. The location and thickness of AlGaN layer with higher Al-content in the step-like QWs are confirmed to significantly affect the distributions and overlap of electron and hole wavefunctions. The best material characteristic is obtained when the step-like QW is designed as an asymmetric structure, such as Al0.74Ga0.26N (1.8 nm)/Al0.64Ga0.36N (1.2 nm), where AlGaN with higher Al-content layer is set to be located nearer from n-side and be thick as far as possible. The key factors for the performance improvements for this specific design is the enhanced hole transport and mitigated auger recombination.

  20. AlGaN Nanostructures with Extremely High Room-Temperature Internal Quantum Efficiency of Emission Below 300 nm

    NASA Astrophysics Data System (ADS)

    Toropov, A. A.; Shevchenko, E. A.; Shubina, T. V.; Jmerik, V. N.; Nechaev, D. V.; Evropeytsev, E. A.; Kaibyshev, V. Kh.; Pozina, G.; Rouvimov, S.; Ivanov, S. V.

    2017-07-01

    We present theoretical optimization of the design of a quantum well (QW) heterostructure based on AlGaN alloys, aimed at achievement of the maximum possible internal quantum efficiency of emission in the mid-ultraviolet spectral range below 300 nm at room temperature. A sample with optimized parameters was fabricated by plasma-assisted molecular beam epitaxy using the submonolayer digital alloying technique for QW formation. High-angle annular dark-field scanning transmission electron microscopy confirmed strong compositional disordering of the thus-fabricated QW, which presumably facilitates lateral localization of charge carriers in the QW plane. Stress evolution in the heterostructure was monitored in real time during growth using a multibeam optical stress sensor intended for measurements of substrate curvature. Time-resolved photoluminescence spectroscopy confirmed that radiative recombination in the fabricated sample dominated in the whole temperature range up to 300 K. This leads to record weak temperature-induced quenching of the QW emission intensity, which at 300 K does not exceed 20% of the low-temperature value.

  1. AlGaN Nanostructures with Extremely High Room-Temperature Internal Quantum Efficiency of Emission Below 300 nm

    NASA Astrophysics Data System (ADS)

    Toropov, A. A.; Shevchenko, E. A.; Shubina, T. V.; Jmerik, V. N.; Nechaev, D. V.; Evropeytsev, E. A.; Kaibyshev, V. Kh.; Pozina, G.; Rouvimov, S.; Ivanov, S. V.

    2016-11-01

    We present theoretical optimization of the design of a quantum well (QW) heterostructure based on AlGaN alloys, aimed at achievement of the maximum possible internal quantum efficiency of emission in the mid-ultraviolet spectral range below 300 nm at room temperature. A sample with optimized parameters was fabricated by plasma-assisted molecular beam epitaxy using the submonolayer digital alloying technique for QW formation. High-angle annular dark-field scanning transmission electron microscopy confirmed strong compositional disordering of the thus-fabricated QW, which presumably facilitates lateral localization of charge carriers in the QW plane. Stress evolution in the heterostructure was monitored in real time during growth using a multibeam optical stress sensor intended for measurements of substrate curvature. Time-resolved photoluminescence spectroscopy confirmed that radiative recombination in the fabricated sample dominated in the whole temperature range up to 300 K. This leads to record weak temperature-induced quenching of the QW emission intensity, which at 300 K does not exceed 20% of the low-temperature value.

  2. Low threshold for optical damage in AlGaN epilayers and heterostructures

    SciTech Connect

    Saxena, Tanuj; Tamulaitis, Gintautas; Shatalov, Max; Yang, Jinwei; Gaska, Remis; Shur, Michael S.

    2013-11-28

    Laser pulses with duration much shorter than the effective carrier lifetime cause permanent photoluminescence (PL) quenching and enhancement of PL decay rate in bare-faceted and capped AlGaN epilayers and multiple quantum wells at pulse energies about an order of magnitude lower than those causing the surface to melt and degrade. In contrast, GaN epilayers exhibit no photomodification in the same excitation intensity range. PL spectra and decay kinetics show that lattice heating is not responsible for the observed changes in AlGaN, which result from the formation of nonradiative recombination centers via recombination-enhanced defect reactions occurring at high nonequilibrium carrier densities.

  3. Statistical nanoscale study of localised radiative transitions in GaN/AlGaN quantum wells and AlGaN epitaxial layers

    NASA Astrophysics Data System (ADS)

    Rigutti, L.; Mancini, L.; Lefebvre, W.; Houard, J.; Hernàndez-Maldonado, D.; Di Russo, E.; Giraud, E.; Butté, R.; Carlin, J.-F.; Grandjean, N.; Blavette, D.; Vurpillot, F.

    2016-09-01

    Compositional disorder has important consequences on the optical properties of III-nitride ternary alloys. In AlGaN epilayers and AlGaN-based quantum heterostructures, the potential fluctuations induced by such disorder lead to the localisation of carriers at low temperature, which affects their transition energies. Using the correlations between micro-photoluminescence, scanning transmission electron microscopy and atom probe tomography we have analysed the optical behaviour of Al0.25Ga0.75N epilayers and that of GaN/AlGaN quantum wells, and reconstructed in three dimensions the distribution of chemical species with sub-nanometre spatial resolution. These composition maps served as the basis for the effective mass calculation of electrons and holes involved in radiative transitions. Good statistical predictions were subsequently obtained for the above-mentioned transition and localisation energies by establishing a link with their microstructural properties.

  4. Quantum Dot-Like Behavior of Compositional Fluctuations in AlGaN Nanowires.

    PubMed

    Belloeil, M; Gayral, B; Daudin, B

    2016-02-10

    We report on the structural and optical properties of AlxGa(1-x)N nanowire sections grown by plasma-assisted molecular beam epitaxy on GaN nanowire bases used as a template. Based on a combination of scanning electron microscopy, microphotoluminescence, time-resolved microphotoluminescence, and photon correlation experiments, it is shown that compositional fluctuations in AlxGa(1-x)N sections associated with carrier localization optically behave as quantum dots. Moreover, most of the micro-optical properties of such fluctuations are demonstrated to be very little dependent on kinetic growth parameters such as AlxGa(1-x)N growth temperature and AlN molar fraction in the alloy, which govern the macrostructural properties of AlxGa(1-x)N sections.

  5. Measurement and simulation of top- and bottom-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors with high external quantum efficiencies

    SciTech Connect

    Brendel, Moritz Helbling, Markus; Knigge, Andrea; Brunner, Frank; Weyers, Markus

    2015-12-28

    A comprehensive study on top- and bottom-illuminated Al{sub 0.5}Ga{sub 0.5}N/AlN metal-semiconductor-metal (MSM) photodetectors having different AlGaN absorber layer thickness is presented. The measured external quantum efficiency (EQE) shows pronounced threshold and saturation behavior as a function of applied bias voltage up to 50 V reaching about 50% for 0.1 μm and 67% for 0.5 μm thick absorber layers under bottom illumination. All experimental findings are in very good accordance with two-dimensional drift-diffusion modeling results. By taking into account macroscopic polarization effects in the hexagonal metal-polar +c-plane AlGaN/AlN heterostructures, new insights into the general device functionality of AlGaN-based MSM photodetectors are obtained. The observed threshold/saturation behavior is caused by a bias-dependent extraction of photoexcited holes from the Al{sub 0.5}Ga{sub 0.5}N/AlN interface. While present under bottom illumination for any AlGaN layer thickness, under top illumination this mechanism influences the EQE-bias characteristics only for thin layers.

  6. Multiplicative properties of quantum channels

    NASA Astrophysics Data System (ADS)

    Rahaman, Mizanur

    2017-08-01

    In this paper, we study the multiplicative behaviour of quantum channels, mathematically described by trace preserving, completely positive maps on matrix algebras. It turns out that the multiplicative domain of a unital quantum channel has a close connection to its spectral properties. A structure theorem (theorem 2.5), which reveals the automorphic property of an arbitrary unital quantum channel on a subalgebra, is presented. Various classes of quantum channels (irreducible, primitive, etc) are then analysed in terms of this stabilising subalgebra. The notion of the multiplicative index of a unital quantum channel is introduced, which measures the number of times a unital channel needs to be composed with itself for the multiplicative algebra to stabilise. We show that the maps that have trivial multiplicative domains are dense in completely bounded norm topology in the set of all unital completely positive maps. Some applications in quantum information theory are discussed.

  7. High quantum efficiency ultraviolet/blue AlGaN /InGaN photocathodes grown by molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Leopold, D. J.; Buckley, J. H.; Rebillot, P.

    2005-08-01

    Enormous technological breakthroughs have been made in optoelectronic devices through the use of advanced heteroepitaxial-semiconductor crystal-growth techniques. This technology is being extended toward enhanced ultraviolet/blue single-photon detection through the design and fabrication of atomically tailored heteroepitaxial GaAlN /GaInN photocathode device structures. The AlGaN /InGaN system is ideal because the band gap can be tailored over an energy range from 0.8 to 6.2 eV and epitaxial thin-film layers can be grown directly on optically transparent sapphire substrates. Although a single p-type GaN layer activated with cesium can produce reasonably high quantum efficiency in the ultraviolet wave band, a more complex design is necessary to achieve high levels extending into the blue region. In the present work, band-gap engineering concepts have been utilized to design heterostructure photocathodes. The increased level of sophistication offered by this approach has been exploited in an attempt to precisely control photoelectron transport to the photocathode surface. Thin heterostructure layers designed for transmission-mode detection were fabricated by molecular-beam epitaxy. A quantum efficiency of 40% at 250 nm was achieved using a thin, compositionally graded GaN /InGaN layer, epitaxially grown on a sapphire substrate. Further improvements are anticipated through continued optimization, defect reduction, and more complex photocathode designs.

  8. Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells

    SciTech Connect

    Chen, G.; Rong, X.; Xu, F. J.; Tang, N.; Wang, X. Q. Shen, B.; Fu, K.; Zhang, B. S.; Hashimoto, H.; Yoshikawa, A.; Ge, W. K.

    2014-04-28

    Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4 μm, which shows potential applications on near infrared detection.

  9. Angular distribution of polarized light and its effect on light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes.

    PubMed

    Chen, Xinjuan; Ji, Cheng; Xiang, Yong; Kang, Xiangning; Shen, Bo; Yu, Tongjun

    2016-05-16

    Angular distribution of polarized light and its effect on light extraction efficiency (LEE) in AlGaN deep-ultraviolet (DUV) light-emitting diodes (LEDs) are investigated in this paper. A united picture is presented to describe polarized light's emission and propagation processes. It is found that the electron-hole recombinations in AlGaN multiple quantum wells produce three kinds of angularly distributed polarized emissions and propagation process can change their intensity distributions. By investigation the change of angular distributions in 277nm and 215nm LEDs, this work reveals that LEE can be significantly enhanced by modulating the angular distributions of polarized light of DUV LEDs.

  10. Performance enhancement of blue light-emitting diodes with InGaN/GaN multi-quantum wells grown on Si substrates by inserting thin AlGaN interlayers

    NASA Astrophysics Data System (ADS)

    Kimura, Shigeya; Yoshida, Hisashi; Uesugi, Kenjiro; Ito, Toshihide; Okada, Aoi; Nunoue, Shinya

    2016-09-01

    We have grown blue light-emitting diodes (LEDs) having InGaN/GaN multi-quantum wells (MQWs) with thin AlyGa1-yN (0 < y < 0.3) interlayers on Si(111) substrates. It was found by high-resolution transmission electron microscopy observations and three-dimensional atom probe analysis that 1-nm-thick interlayers with an AlN mole fraction of less than y = 0.3 were continuously formed between GaN barriers and InGaN wells, and that the AlN mole fraction up to y = 0.15 could be consistently controlled. The external quantum efficiency of the blue LED was enhanced in the low-current-density region (≤45 A/cm2) but reduced in the high-current-density region by the insertion of the thin Al0.15Ga0.85N interlayers in the MQWs. We also found that reductions in both forward voltage and wavelength shift with current were achieved by inserting the interlayers even though the inserted AlGaN layers had potential higher than that of the GaN barriers. The obtained peak wall-plug efficiency was 83% at room temperature. We suggest that the enhanced electroluminescence (EL) performance was caused by the introduction of polarization-induced hole carriers in the InGaN wells on the side adjacent to the thin AlGaN/InGaN interface and efficient electron carrier transport through multiple wells. This model is supported by temperature-dependent EL properties and band-diagram simulations. We also found that inserting the interlayers brought about a reduction in the Shockley-Read-Hall nonradiative recombination component, corresponding to the shrinkage of V-defects. This is another conceivable reason for the observed performance enhancement.

  11. Pressure Study of Photoluminescence in GaN/InGaN/ AlGaN Quantum Wells

    NASA Astrophysics Data System (ADS)

    Perlin, Piotr; Iota, V.; Weinstein, B. A.; Wisniewski, P.; Osinski, M.; Eliseev, P. G.

    1997-03-01

    We have studied the photoluminescence (PL) from two commercial high brightness single quantum well light emitting diodes (Nichia Chem. Industs.) with In_xGa_1-x N (x=0.45 and 0.2) as the active layers under hydrostatic pressures up to 7 GPa. These diodes are the best existing light emitters at short wavelengths, having the emission wavelengths of 430 nm and 530 nm depending on the content of indium in the 30 Åthick quantum wells. Although these devices show a remarkable quality and efficiency (luminosity as high as 12 cd), the mechanism of recombination remains obscure. We discovered that the pressure coefficient for each of the observed PL peaks is dramatically (2-3 times) lower than that of the energy gap of its InGaN active layer. These observations, in conjunction with the fact that the observed emission occurs below the energy gap of the quantum well material, and also considering the anomalous temperature behavior of the emission (peak energy increasing with temperature) suggest the involvement of localized states and exclude a simple band-to-band recombination picture. These localized states may be tentatively attributed to the presence of band tails in the gap which stem from composition fluctuations in the InGaN alloy. (figures)

  12. Multiple-Quantum-Well Intersubband Infrared Detector

    NASA Technical Reports Server (NTRS)

    Borenstain, Shmuel I.

    1991-01-01

    Proposed multiple-quantum-well intersubband semiconductor device detects photons over broader range of wavelengths. Device is stack of substacks, each of which contains quantum-well layers sensitive to different narrow band of wavelengths. Bandwidth and detectivity increased.

  13. Inverted vertical algan deep ultraviolet leds grown on p-SiC substrates by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Nothern, Denis Maurice

    Deep ultraviolet light emitting diodes (UV LEDs) are an important emerging technology for a number of applications such as water/air/surface disinfection, communications, and epoxy curing. However, as of yet, deep UV LEDs grown on sapphire substrates are neither efficient enough nor powerful enough to fully serve these and other potential applications. The majority of UV LEDs reported so far in the literature are grown on sapphire substrates and their design consists of AlGaN quantum wells (QWs) embedded in an AlGaN p-i-n junction with the n-type layer on the sapphire. These devices suffer from a high concentration of threading defects originating from the large lattice mismatch between the sapphire substrate and AlGaN alloys. Other issues include the poor doping efficiency of the n- and particularly the p-AlGaN alloys, the extraction of light through the sapphire substrate, and the heat dissipation through the thermally insulating sapphire substrate. These problems have historically limited the internal quantum efficiency (IQE), injection efficiency (IE), and light extraction efficiency (EE) of devices. As a means of addressing these efficiency and power challenges, I have contributed to the development of a novel inverted vertical deep UV LED design based on AlGaN grown on p-SiC substrates. Starting with a p-SiC substrate that serves as the p-type side of the p-i-n junction largely eliminates the necessity for the notoriously difficult p-type doping of AlGaN alloys, and allows for efficient heat dissipation through the highly thermally conductive SiC substrate. UV light absorption in the SiC substrate can be addressed by first growing p-type doped distributed Bragg reflectors (DBRs) on top of the substrate prior to the deposition of the active region of the device. A number of n-AlGaN films, AlGaN/AlGaN multiple quantum wells, and p-type doped AlGaN DBRs were grown by molecular beam epitaxy (MBE). These were characterized in situ by reflected high energy electron

  14. Short-period intrinsic Stark GaN /AlGaN superlattice as a Bloch oscillator

    NASA Astrophysics Data System (ADS)

    Litvinov, V. I.; Manasson, A.; Pavlidis, D.

    2004-07-01

    We discuss the properties of AlGaN /GaN superlattice (SL) related to the feasibility of a terahertz-range oscillator. The distortion of the conduction-band profile by the polarization fields has been taken into account. We have calculated the conduction-band offset between the pseudomorphic AlGaN barrier and the GaN quantum well, the first miniband width and energy dispersion, as functions of Al content in the barrier. As the short-period SL miniband energy dispersion contains contributions from next to nearest neighbors, it causes anharmonic electron oscillations at the multiples of the fundamental Bloch frequency. The Al content and SL period that favor high-frequency oscillations have been determined.

  15. Plasma-assisted molecular beam epitaxy of Al(Ga)N layers and quantum well structures for optically pumped mid-UV lasers on c-Al2O3

    NASA Astrophysics Data System (ADS)

    Ivanov, S. V.; Nechaev, D. V.; Sitnikova, A. A.; Ratnikov, V. V.; Yagovkina, M. A.; Rzheutskii, N. V.; Lutsenko, E. V.; Jmerik, V. N.

    2014-06-01

    This paper reports on novel approaches developed for plasma-assisted molecular beam epitaxy of Al-rich AlGaN epilayers and quantum well heterostructures on c-sapphire, which allowed us to fabricate low-threshold optically-pumped separate confinement heterostructure lasers emitting in the mid-UV spectral range (258-290 nm) with the threshold power density below 600 kW cm-2. The optimum buffer structure has been developed which provides lowering the near-surface threading dislocation density down to 1.5 × 108 and 3 × 109 cm-2 for screw and edge types, respectively, and improving the surface morphology (rms < 0.7 nm at the area of 3 × 3 μm-2). It comprises the high-temperature (780 °C) migration enhanced epitaxy growth of a (30-70) nm thick AlN nucleation layer on c-Al2O3, followed by a 2 μm thick AlN buffer grown under the metal-rich conditions in the Al-flux modulation mode and containing several (up to 6) ultra-thin (˜3 nm) GaN interlayers grown at N-rich conditions. Proper strain engineering in AlGaN single quantum well heterostructure grown atop of the AlN buffer layer enables one to preserve dominant TE polarization of both spontaneous and stimulated emission even at shortest obtained wavelength (258 nm). The threshold power density of stimulated emission as low as 150 kW cm-2 at 289 nm for a single quantum well laser structure has been demonstrated.

  16. An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission.

    PubMed

    Lee, Jong Won; Kim, Dong Yeong; Park, Jun Hyuk; Schubert, E Fred; Kim, Jungsub; Lee, Jinsub; Kim, Yong-Il; Park, Youngsoo; Kim, Jong Kyu

    2016-03-03

    While there is an urgent need for semiconductor-based efficient deep ultraviolet (DUV) sources, the efficiency of AlGaN DUV light-emitting diodes (LEDs) remains very low because the extraction of DUV photons is significantly limited by intrinsic material properties of AlGaN. Here, we present an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes for maximizing the power conversion efficiency.

  17. An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission

    PubMed Central

    Lee, Jong Won; Kim, Dong Yeong; Park, Jun Hyuk; Schubert, E. Fred; Kim, Jungsub; Lee, Jinsub; Kim, Yong-Il; Park, Youngsoo; Kim, Jong Kyu

    2016-01-01

    While there is an urgent need for semiconductor-based efficient deep ultraviolet (DUV) sources, the efficiency of AlGaN DUV light-emitting diodes (LEDs) remains very low because the extraction of DUV photons is significantly limited by intrinsic material properties of AlGaN. Here, we present an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes for maximizing the power conversion efficiency. PMID:26935402

  18. An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission

    NASA Astrophysics Data System (ADS)

    Lee, Jong Won; Kim, Dong Yeong; Park, Jun Hyuk; Schubert, E. Fred; Kim, Jungsub; Lee, Jinsub; Kim, Yong-Il; Park, Youngsoo; Kim, Jong Kyu

    2016-03-01

    While there is an urgent need for semiconductor-based efficient deep ultraviolet (DUV) sources, the efficiency of AlGaN DUV light-emitting diodes (LEDs) remains very low because the extraction of DUV photons is significantly limited by intrinsic material properties of AlGaN. Here, we present an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes for maximizing the power conversion efficiency.

  19. Quantum internet using code division multiple access.

    PubMed

    Zhang, Jing; Liu, Yu-xi; Ozdemir, Sahin Kaya; Wu, Re-Bing; Gao, Feifei; Wang, Xiang-Bin; Yang, Lan; Nori, Franco

    2013-01-01

    A crucial open problem inS large-scale quantum networks is how to efficiently transmit quantum data among many pairs of users via a common data-transmission medium. We propose a solution by developing a quantum code division multiple access (q-CDMA) approach in which quantum information is chaotically encoded to spread its spectral content, and then decoded via chaos synchronization to separate different sender-receiver pairs. In comparison to other existing approaches, such as frequency division multiple access (FDMA), the proposed q-CDMA can greatly increase the information rates per channel used, especially for very noisy quantum channels.

  20. Quantum internet using code division multiple access

    NASA Astrophysics Data System (ADS)

    Zhang, Jing; Liu, Yu-Xi; Özdemir, Şahin Kaya; Wu, Re-Bing; Gao, Feifei; Wang, Xiang-Bin; Yang, Lan; Nori, Franco

    2013-07-01

    A crucial open problem inS large-scale quantum networks is how to efficiently transmit quantum data among many pairs of users via a common data-transmission medium. We propose a solution by developing a quantum code division multiple access (q-CDMA) approach in which quantum information is chaotically encoded to spread its spectral content, and then decoded via chaos synchronization to separate different sender-receiver pairs. In comparison to other existing approaches, such as frequency division multiple access (FDMA), the proposed q-CDMA can greatly increase the information rates per channel used, especially for very noisy quantum channels.

  1. Quantum internet using code division multiple access

    PubMed Central

    Zhang, Jing; Liu, Yu-xi; Özdemir, Şahin Kaya; Wu, Re-Bing; Gao, Feifei; Wang, Xiang-Bin; Yang, Lan; Nori, Franco

    2013-01-01

    A crucial open problem inS large-scale quantum networks is how to efficiently transmit quantum data among many pairs of users via a common data-transmission medium. We propose a solution by developing a quantum code division multiple access (q-CDMA) approach in which quantum information is chaotically encoded to spread its spectral content, and then decoded via chaos synchronization to separate different sender-receiver pairs. In comparison to other existing approaches, such as frequency division multiple access (FDMA), the proposed q-CDMA can greatly increase the information rates per channel used, especially for very noisy quantum channels. PMID:23860488

  2. Growth and doping of AlGaN and electroluminescence of SAG-InGaN/AlGaN heterostructure by mixed-source HVPE

    NASA Astrophysics Data System (ADS)

    Kim, K. H.; Ahn, H. S.; Yang, M.; Jang, K. S.; Hwang, S. L.; Choi, W. J.; Cho, C. R.; Kim, S. W.; Honda, Y.; Yamaguchi, M.; Sawaki, N.; Yoo, J.; Lee, S. M.; Koike, M.

    2006-06-01

    The AlxGa1-xN layers on GaN/Al2O3 substrates are grown by mixed-source hydride vapor phase epitaxy (HVPE) at various temperatures of the source zone. We find source zone temperature dependence of the composition x of AlxGa1-xN layers. Te doping as a new attempt and Si doping in obtaining an n-type AlGaN layers are performed by putting small amount of Te (or Si) into the Ga-Al source, respectively. In case of Te-doped AlGaN (x = 0.16), the carrier concentration is varied from 1.1 x 1018 to 8.0 x 1018/cm3, while in case of Si-doped one, it is varied from 2.0 x 1016 to 1.1 x 1017/cm3. We find the new results that Te doping is more suitable to get a high n-type concentration by mixed-source HVPE. InGaN/GaN multiple quantum wells (MQWs) are grown on the selective area growth (SAG)-Te-doped AlGaN and SAG-Si-doped AlGaN cladding layer by mealorganic chemical vapour deposition (MOCVD), respectively. Furthermore, we investigate the electroluminescence (EL) properties of SAG-LEDs of two different cladding layers.

  3. Multiple Multi-Qubit Quantum States Sharing

    NASA Astrophysics Data System (ADS)

    Qin, Hua-Wang; Dai, Yue-Wei

    2016-04-01

    A multiple multi-qubit quantum states sharing scheme is proposed, in which the dealer can share multiple multi-qubit quantum states among the participants through only one distribution and one recovery. The dealer encodes the secret quantum states into a special entangled state, and then distributes the particles of the entangled state to the participants. The participants perform the single-particle measurements on their particles, and can cooperate to recover the multiple multi-qubit quantum states. Compared to the existing schemes, our scheme is more efficient and more flexible in practice.

  4. An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: preferential outcoupling of strong in-plane emission (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Kim, Jong Kyu; Lee, Jong Won; Kim, Dong-Yeong; Park, Jun Hyuk; Schubert, E. Fred; Kim, Jungsub; Kim, Yong-Il

    2016-09-01

    AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) are being developed for their numerous applications such as purification of air and water, sterilization in food processing, UV curing, medical-, and defense-related light sources. However, external quantum efficiency (EQE) of AlGaN-based DUV LEDs is very poor (<5% for 250nm) particularly due to low hole concentration and light extraction efficiency (LEE). Conventional LEE-enhancing techniques used for GaInN-based visible LEDs turned out to be ineffective for DUV LEDs due to difference in intrinsic material property between GaInN and AlGaN (Al< 30%). Unlike GaInN visible LEDs, DUV light from a high Al-content AlGaN active region is strongly transverse-magnetic (TM) polarized, that is, the electric field vector is parallel to the (0001) c-axis and shows strong sidewall emission through m- or a-plane due to crystal-field split-off hole band being top most valence band. Therefore, a new LEE-enhancing approach addressing the unique intrinsic property of AlGaN DUV LEDs is strongly desired. In this study, an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells is presented. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage simultaneously. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes to maximize the power conversion efficiency.

  5. Development of ultraviolet electroabsorption modulators and light emitting diodes based on AlGaN alloys

    NASA Astrophysics Data System (ADS)

    Kao, Chen-Kai

    The research in this dissertation addressed the development of ultraviolet (UV) electroabsorption modulators and ultraviolet light emitting diodes (UV-LEDs), covering the spectral range from 360 to 265 nm. The materials system for both types of devices is the AlGaN alloys, either in bulk or quantum well (QW) form, grown by plasma-assisted molecular beam epitaxy (MBE). Potential applications of these devices either individually or in combination include UV non-line-of-sight free-space-optical communications, UV sensing and spectroscopic systems, Q-switched pulsed lasers, water/air purification and various medical applications. Optical modulators based on cubic III-V semiconductors have been the subject of extensive research over the past several years. Such devices are typically based on the quantum-confined Stark effect to modify the absorption spectrum of multiple-quantum-well active regions. On the other hand, in wurtzite III-Nitride semiconductors, strong electric fields are already present in the quantum wells due to intrinsic and piezoelectric polarizations; as a result, an even greater change in absorption is achievable, especially if the internal fields are compensated by the external bias so that the net field in the quantum wells is reduced. A number of UV electroabsorption modulators based on Schottky barriers on bulk GaN and GaN /AlGaN multiple quantum wells (MQWs) were designed, fabricated and characterized. Record modulation ratio of 30 % was obtained from bulk GaN Schottky barrier modulators at the excitonic resonant energy of 3.45 eV (360 nm) upon the application of 12 V reverse bias. Similarly, record modulation ratio of 43% was obtained from GaN / AlGaN MQWs Schottky barrier modulators at the excitonic resonant energy of 3.48 eV (356 nm) upon the application of 17 V reverse bias. The external quantum efficiency (EQE) of AlGaN based deep UV LEDS is relatively low (˜1% at 270 nm). This is generally attributed to the poor internal quantum efficiency

  6. Broadband biphoton generation and statistics of quantum light in the UV-visible range in an AlGaN microring resonator.

    PubMed

    De Leonardis, Francesco; Soref, Richard A; Soltani, Mohammad; Passaro, Vittorio M N

    2017-09-12

    We present a physical investigation on the generation of correlated photon pairs that are broadly spaced in the ultraviolet (UV) and visible spectrum on a AlGaN/AlN integrated photonic platform which is optically transparent at these wavelengths. Using spontaneous four wave mixing (SFWM) in an AlGaN microring resonator, we show design techniques to satisfy the phase matching condition between the optical pump, the signal, and idler photon pairs, a condition which is essential and is a key hurdle when operating at short wavelength due to the strong normal dispersion of the material. Such UV-visible photon pairs are quite beneficial for interaction with qubit ions that are mostly in this wavelength range, and will enable heralding the photon-ion interaction. As a target application example, we present the systematic AlGaN microresonator design for generating signal and idler photon pairs using a blue wavelength pump, while the signal appears at the transition of ytterbium ion ((171)Yb(+), 369.5 nm) and the idler appears in the far blue or green range. The photon pairs have minimal crosstalk to the pump power due to their broad spacing in spectral wavelength, thereby relaxing the design of on-chip integrated filters for separating pump, signal and idler.

  7. Formation and characteristics of AlGaN-based three-dimensional hexagonal nanopyramid semi-polar multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Tian, Yingdong; Yan, Jianchang; Zhang, Yun; Zhang, Yonghui; Chen, Xiang; Guo, Yanan; Wang, Junxi; Li, Jinmin

    2016-05-01

    We demonstrated for the first time the formation and study of semi-polar AlGaN multiple-quantum-wells (MQWs) grown on highly regular hexagonal AlN nanopyramids. The AlN nanopyramids were obtained by a metal-organic chemical vapor phase deposition regrowth method on a well-ordered AlN nanorod array prepared by a top-down etching process. The growth mechanism of the AlN nanopyramids was ascribed to the slow growth of the (101&cmb.macr;1) semi-polar plane, which resulted from hydrogen passivation. Beneath the semi-polar facets, air voids were formed. This was attributed to the insufficient delivery of gas reactants to the bottom of the nanorods during the growth process. The polarization effect in semi-polar AlGaN MQWs was numerically calculated. The results showed that the internal electric field (IEF) in the semi-polar MQWs was remarkably reduced by 80% in comparison with c-plane MQWs. Power dependent photoluminescence indicated that the semi-polar AlGaN MQWs had negligible wavelength shifts that resulted from the reduced IEF, which was in accordance with theoretical predictions. In addition, epitaxial strain was greatly relieved in the AlN regrowth layer, which was revealed from the peak shift of the E2(high) phonon using micro-Raman spectroscopy. The advantages of AlGaN-based hexagonal nanopyramid semi-polar three dimensional nanostructures would lead to a large improvement of output power in UV-LEDs.

  8. Quantum hyperparallel algorithm for matrix multiplication

    NASA Astrophysics Data System (ADS)

    Zhang, Xin-Ding; Zhang, Xiao-Ming; Xue, Zheng-Yuan

    2016-04-01

    Hyperentangled states, entangled states with more than one degree of freedom, are considered as promising resource in quantum computation. Here we present a hyperparallel quantum algorithm for matrix multiplication with time complexity O(N2), which is better than the best known classical algorithm. In our scheme, an N dimensional vector is mapped to the state of a single source, which is separated to N paths. With the assistance of hyperentangled states, the inner product of two vectors can be calculated with a time complexity independent of dimension N. Our algorithm shows that hyperparallel quantum computation may provide a useful tool in quantum machine learning and “big data” analysis.

  9. Quantum hyperparallel algorithm for matrix multiplication.

    PubMed

    Zhang, Xin-Ding; Zhang, Xiao-Ming; Xue, Zheng-Yuan

    2016-04-29

    Hyperentangled states, entangled states with more than one degree of freedom, are considered as promising resource in quantum computation. Here we present a hyperparallel quantum algorithm for matrix multiplication with time complexity O(N(2)), which is better than the best known classical algorithm. In our scheme, an N dimensional vector is mapped to the state of a single source, which is separated to N paths. With the assistance of hyperentangled states, the inner product of two vectors can be calculated with a time complexity independent of dimension N. Our algorithm shows that hyperparallel quantum computation may provide a useful tool in quantum machine learning and "big data" analysis.

  10. Time-domain multiple-quantum NMR

    SciTech Connect

    Weitekamp, Daniel P.

    1982-11-01

    The development of time-domain multiple-quantum nuclear magnetic resonance is reviewed through mid 1982 and some prospects for future development are indicated. Particular attention is given to the problem of obtaining resolved, interpretable, many-quantum spectra for anisotropic magnetically isolated systems of coupled spins. New results are presented on a number of topics including the optimization of multiple-quantum-line intensities, analysis of noise in two-dimensional spectroscopy, and the use of order-selective excitation for cross polarization between nuclear-spin species.

  11. Multiple phase estimation in quantum cloning machines

    NASA Astrophysics Data System (ADS)

    Yao, Yao; Ge, Li; Xiao, Xing; Wang, Xiao-guang; Sun, Chang-pu

    2014-08-01

    Since the initial discovery of the Wootters-Zurek no-cloning theorem, a wide variety of quantum cloning machines have been proposed aiming at imperfect but optimal cloning of quantum states within its own context. Remarkably, most previous studies have employed the Bures fidelity or the Hilbert-Schmidt norm as the figure of merit to characterize the quality of the corresponding cloning scenarios. However, in many situations, what we truly care about is the relevant information about certain parameters encoded in quantum states. In this work, we investigate the multiple phase estimation problem in the framework of quantum cloning machines, from the perspective of quantum Fisher information matrix (QFIM). Focusing on the generalized d-dimensional equatorial states, we obtain the analytical formulas of QFIM for both universal quantum cloning machine (UQCM) and phase-covariant quantum cloning machine (PQCM), and prove that PQCM indeed performs better than UQCM in terms of QFIM. We highlight that our method can be generalized to arbitrary cloning schemes where the fidelity between the single-copy input and output states is input-state independent. Furthermore, the attainability of the quantum Cramér-Rao bound is also explicitly discussed.

  12. Time-Resolved Photoluminescence Studies of InGaN/AlGaN Multiple Quantum Wells

    NASA Astrophysics Data System (ADS)

    Zeng, K. C.; Smith, M.; Lin, J. Y.; Jiang, H. X.; Robert, J. C.; Piner, E. L.; McIntosh, F. G.; Bahbahani, M.; Bedair, S. M.; Zavada, J.

    1997-03-01

    Picosecond time-resolved photoluminescence (PL) spectroscopy has been employed to study the dynamic processes of optical transitions in InGaN/AlGaN multiple quantum wells (MQW) grown by metal-organic chemical vapor deposition (MOCVD). The dynamical behavior of the PL emission reveals that the main emission line in these MQW is the combination of the localized exciton and a band-to-impurity emission lines. The spectral lineshape and the recombination dynamics of the localized exciton and of the band-to-impurity transitions have been systematically investigated at different temperatures and excitation intensities and for MQW with different structures and growth conditions. From these studies, important parameters, including the localization energy and the recombination lifetimes of the localized excitons in InGaN/AlGaN quantum wells, the well width fluctuation, alloy compositions in the well and the barrier materials, and the band offset between InGaN and AlGaN can be deduced. Comparing with time-resolved PL results of InGaN/GaN and GaN/AlGaN MQW, important effects of interface on the optical properties of the III-nitride MQW have been evaluated. Implications of our results to device applications will be discussed.

  13. Determination of gain in AlGaN cladding free nitride laser diodes

    SciTech Connect

    Muziol, G.; Turski, H.; Wolny, P.

    2013-08-05

    The optical gain spectra of InGaN-based multiple-quantum-well (MQW) laser diodes (LDs) grown by plasma-assisted molecular beam epitaxy are compared for different emission wavelengths. Two AlGaN cladding free LDs with similar epitaxial structures but with different In compositions in MQW were grown to study the dependence of material gain on lasing wavelength. As the emission wavelength increased from 432 to 458 nm, the differential modal gain decreased from 5.7 to 4.7 cm/kA, and the optical losses increased from 40 to 46 cm{sup −1} resulting in an increase in threshold current density. This dependence is attributed to lower optical mode confinement of LD emitting at longer wavelength. We found a strong decrease of confinement factor with increasing wavelength.

  14. Selectivity in multiple quantum nuclear magnetic resonance

    SciTech Connect

    Warren, W.S.

    1980-11-01

    The observation of multiple-quantum nuclear magnetic resonance transitions in isotropic or anisotropic liquids is shown to give readily interpretable information on molecular configurations, rates of motional processes, and intramolecular interactions. However, the observed intensity of high multiple-quantum transitions falls off dramatically as the number of coupled spins increases. The theory of multiple-quantum NMR is developed through the density matrix formalism, and exact intensities are derived for several cases (isotropic first-order systems and anisotropic systems with high symmetry) to shown that this intensity decrease is expected if standard multiple-quantum pulse sequences are used. New pulse sequences are developed which excite coherences and produce population inversions only between selected states, even though other transitions are simultaneously resonant. One type of selective excitation presented only allows molecules to absorb and emit photons in groups of n. Coherent averaging theory is extended to describe these selective sequences, and to design sequences which are selective to arbitrarily high order in the Magnus expansion. This theory and computer calculations both show that extremely good selectivity and large signal enhancements are possible.

  15. Infrared Multiple-Quantum-Well Phototransistor

    NASA Technical Reports Server (NTRS)

    Borenstain, Shmuel I.

    1992-01-01

    Proposed npn AlxGa1-xAs phototransistor incorporates multiple-quantum-well (MQW) infrared photodetector. Has n-doped contacts and is embedded between p-doped base region and n-doped collector region of transistor. Photocurrent amplified, and dark current suppressed.

  16. Subcarrier multiplexing multiple-input multiple-output quantum key distribution scheme with orthogonal quantum states

    NASA Astrophysics Data System (ADS)

    Xiao, Hailin; Zhang, Zhongshan

    2017-01-01

    Quantum key distribution (QKD) system is presently being developed for providing high-security transmission in future free-space optical communication links. However, current QKD technique restricts quantum secure communication to a low bit rate. To improve the QKD bit rate, we propose a subcarrier multiplexing multiple-input multiple-output quantum key distribution (SCM-MQKD) scheme with orthogonal quantum states. Specifically, we firstly present SCM-MQKD system model and drive symmetrical SCM-MQKD system into decoherence-free subspaces. We then utilize bipartite Werner and isotropic states to construct multiple parallel single photon with orthogonal quantum states that are invariant for unitary operations. Finally, we derive the density matrix and the capacity of SCM-MQKD system, respectively. Theoretical analysis and numerical results show that the capacity of SCM-MQKD system will increase {log _2}(N^2+1) times than that of single-photon QKD system.

  17. Multiple quantum phase transitions of plutonium compounds

    SciTech Connect

    Matsumoto, Munehisa; Yin, Quan; Otsuki, Junya; Savrasov, Sergey Y.

    2011-07-22

    We show by quantum Monte Carlo simulations of realistic Kondo lattice models derived from electronicstructure calculations that multiple quantum critical points can be realized in plutonium-based materials. We place representative systems, including PuCoGa5, on a realistic Doniach phase diagram and identify the regions where the magnetically mediated superconductivity could occur. The solution of an inverse problem to restore the quasiparticle renormalization factor for f electrons is shown to be sufficiently good to predict the trends among Sommerfeld coefficients and magnetism. A suggestion on the possible experimental verification for this scenario is given for PuAs.

  18. Quantum key distribution network for multiple applications

    NASA Astrophysics Data System (ADS)

    Tajima, A.; Kondoh, T.; Ochi, T.; Fujiwara, M.; Yoshino, K.; Iizuka, H.; Sakamoto, T.; Tomita, A.; Shimamura, E.; Asami, S.; Sasaki, M.

    2017-09-01

    The fundamental architecture and functions of secure key management in a quantum key distribution (QKD) network with enhanced universal interfaces for smooth key sharing between arbitrary two nodes and enabling multiple secure communication applications are proposed. The proposed architecture consists of three layers: a quantum layer, key management layer and key supply layer. We explain the functions of each layer, the key formats in each layer and the key lifecycle for enabling a practical QKD network. A quantum key distribution-advanced encryption standard (QKD-AES) hybrid system and an encrypted smartphone system were developed as secure communication applications on our QKD network. The validity and usefulness of these systems were demonstrated on the Tokyo QKD Network testbed.

  19. Multiple functional UV devices based on III-Nitride quantum wells for biological warfare agent detection

    NASA Astrophysics Data System (ADS)

    Wang, Qin; Savage, Susan; Persson, Sirpa; Noharet, Bertrand; Junique, Stéphane; Andersson, Jan Y.; Liuolia, Vytautas; Marcinkevicius, Saulius

    2009-02-01

    We have demonstrated surface normal detecting/filtering/emitting multiple functional ultraviolet (UV) optoelectronic devices based on InGaN/GaN, InGaN/AlGaN and AlxGa1-xN/AlyGa1-yN multiple quantum well (MQW) structures with operation wavelengths ranging from 270 nm to 450 nm. Utilizing MQW structure as device active layer offers a flexibility to tune its long cut-off wavelength in a wide UV range from solar-blind to visible by adjusting the well width, well composition and barrier height. Similarly, its short cut-off wavelength can be adjusted by using a GaN or AlGaN block layer on a sapphire substrate when the device is illuminated from its backside, which further provides an optical filtering effect. When a current injects into the device under forward bias the device acts as an UV light emitter, whereas the device performs as a typical photodetector under reverse biases. With applying an alternating external bias the device might be used as electroabsorption modulator due to quantum confined Stark effect. In present work fabricated devices have been characterized by transmission/absorption spectra, photoresponsivity, electroluminescence, and photoluminescence measurements under various forward and reverse biases. The piezoelectric effect, alloy broadening and Stokes shift between the emission and absorption spectra in different InGaN- and AlGaN-based QW structures have been investigated and compared. Possibilities of monolithic or hybrid integration using such multiple functional devices for biological warfare agents sensing application have also be discussed.

  20. Spin-orbit interaction in multiple quantum wells

    SciTech Connect

    Hao, Ya-Fei

    2015-01-07

    In this paper, we investigate how the structure of multiple quantum wells affects spin-orbit interactions. To increase the interface-related Rashba spin splitting and the strength of the interface-related Rashba spin-orbit interaction, we designed three kinds of multiple quantum wells. We demonstrate that the structure of the multiple quantum wells strongly affected the interface-related Rashba spin-orbit interaction, increasing the interface-related Rashba spin splitting to up to 26% larger in multiple quantum wells than in a stepped quantum well. We also show that the cubic Dresselhaus spin-orbit interaction similarly influenced the spin relaxation time of multiple quantum wells and that of a stepped quantum well. The increase in the interface-related Rashba spin splitting originates from the relationship between interface-related Rashba spin splitting and electron probability density. Our results suggest that multiple quantum wells can be good candidates for spintronic devices.

  1. Multiple Exciton Generation in Semiconductor Quantum Dots.

    PubMed

    Beard, Matthew C

    2011-06-02

    Multiple exciton generation in quantum dots (QDs) has been intensively studied as a way to enhance solar energy conversion by utilizing the excess energy in the absorbed photons. Among other useful properties, quantum confinement can both increase Coulomb interactions that drive the MEG process and decrease the electron-phonon coupling that cools hot excitons in bulk semiconductors. However, variations in the reported enhanced quantum yields (QYs) have led to disagreements over the role that quantum confinement plays. The enhanced yield of excitons per absorbed photon is deduced from a dynamical signature in the transient absorption or transient photoluminescence and is ascribed to the creation of biexcitons. Extraneous effects such as photocharging are partially responsible for the observed variations. When these extraneous effects are reduced, the MEG efficiency, defined in terms of the number of additional electron-hole pairs produced per additional band gap of photon excitation, is about two times better in PbSe QDs than that in bulk PbSe. Thin films of electronically coupled QDs have shown promise in simple photon-to-electron conversion architectures. If the MEG efficiency can be further enhanced and charge separation and transport can be optimized within QD films, then QD solar cells can lead to third-generation solar energy conversion technologies.

  2. Semidirect Products of C*-Quantum Groups: Multiplicative Unitaries Approach

    NASA Astrophysics Data System (ADS)

    Meyer, Ralf; Roy, Sutanu; Woronowicz, Stanisław Lech

    2017-04-01

    C*-quantum groups with projection are the noncommutative analogues of semidirect products of groups. Radford's Theorem about Hopf algebras with projection suggests that any C*-quantum group with projection decomposes uniquely into an ordinary C*-quantum group and a "braided" C*-quantum group. We establish this on the level of manageable multiplicative unitaries.

  3. Wafer-scale crack-free AlGaN on GaN through two-step selective-area growth for optically pumped stimulated emission

    NASA Astrophysics Data System (ADS)

    Ko, Young-Ho; Bae, Sung-Bum; Kim, Sung-Bock; Kim, Dong Churl; Leem, Young Ahn; Cho, Yong-Hoon; Nam, Eun-Soo

    2016-07-01

    Crack-free AlGaN template has been successfully grown over entire 2-in. wafer by using 2-step selective-area growth (SAG). The GaN truncated structure was obtained by vertical growth mode with low growth temperature. AlGaN of second step was grown under lateral growth mode. Low pressure enhanced the relative ratio of lateral to vertical growth rate as well as absolute overall growth rate. High V/III ratio was favorable for lateral growth mode. Crack-free planar AlGaN was obtained under low pressure of 30 Torr and high V/III ratio of 4400. The AlGaN was crack-free over entire 2-in. wafer and had quite uniform Al-mole fraction. The dislocation density of the AlGaN with 20% Al-composition was as low as ~7.6×108 /cm2, measured by cathodoluminescence. GaN/AlGaN multi-quantum well (MQW) with cladding and waveguide layers were grown on the crack-free AlGaN template with low dislocation density. It was confirmed that the MQW on the AlGaN template emitted the stimulated emission at 355.5 nm through optical pumping experiment. The AlGaN obtained by 2-step SAG would provide high crystal quality for highly-efficient optoelectronic devices as well as the ultraviolet laser diode.

  4. Effects of two-mode transverse optical phonons in bulk wurtzite AlGaN on electronic mobility in AlGaN/GaN quantum wells

    NASA Astrophysics Data System (ADS)

    Gu, Z.; Ban, S. L.; Jiang, D. D.; Qu, Y.

    2017-01-01

    The two-mode property of bulk transverse optical (TO) phonons in ternary mixed crystals of wurtzite AlxGa1-xN has been investigated by introducing impurity modes in a modified random-element isodisplacement model. Based on the dielectric continuous model, the uniaxial model, and the Lei-Ting balance equation, the effects of the two-mode property on electrostatic potentials of interface optical and confined optical phonons in AlGaN/GaN quantum wells, as well as their influences on the electronic mobility (EM), are discussed by a component-dependent weight model. Our results indicate that the total EM decreases to a minimum at first and then increases slowly with x under the influences of the competitions from the eight branches of phonons. The further calculation shows that the total EM decreases with the increment of temperature in the range of 200 K < T < 400 K and reduction of well width d. As a comparison, the EM is calculated for an Al0.58Ga0.42N/GaN quantum well at room temperature, and our result is 1263.0 cm2/Vs, which is 1.44 times of the experiment value. Our result is expected since the difference between our theory and the experiment is mainly due to the neglect of interface-roughness and other secondary scattering mechanisms. Consequently, the two-mode property of bulk TO phonons in ternary mixed crystals does affect obviously on the electron transport in the quantum wells. And our component-dependent weight model could be extended to study the electric properties influenced by optical phonons in other related heterostructures.

  5. MULTIPLE-QUANTUM NMR IN SOLIDS

    SciTech Connect

    Yen, Y-S.

    1982-11-01

    Time domain multiple-quantum (MQ) nuclear magnetic resonance (NMR) spectroscopy is a powerful tool for spectral simplification and for providing new information on molecular dynamics. In this thesis, applications of MQ NMR are presented and show distinctly the advantages of this method over the conventional single-quantum NMR. Chapter 1 introduces the spin Hamiltonians, the density matrix formalism and some basic concepts of MQ NMR spectroscopy. In chapter 2, {sup 14}N double-quantum coherence is observed with high sensitivity in isotropic solution, using only the magnetization of bound protons. Spin echoes are used to obtain the homogeneous double-quantum spectrum and to suppress a large H{sub 2}O solvent signal. Chapter 3 resolves the main difficulty in observing high MQ transitions in solids. Due to the profusion of spin transitions in a solid, individual lines are unresolved. Excitation and detection of high quantum transitions by normal schemes are thus difficult. To ensure that overlapping lines add constructively and thereby to enhance sensitivity, time-reversal pulse sequences are used to generate all lines in phase. Up to 22-quantum {sup 1}H absorption in solid adamantane is observed. A time dependence study shows an increase in spin correlations as the excitation time increased. In chapter 4, a statistical theory of MQ second moments is developed for coupled spins of spin I = 1/2. The model reveals that the ratio of the average dipolar coupling to the rms value largely determines the dependence of second moments on the number of quanta. The results of this model are checked against computer-calculated and experimental second moments, and show good agreement. A simple scheme is proposed in chapter 5 for sensitivity improvement in a MQ experiment. The scheme involves acquiring all of the signal energy available in the detection period by applying pulsed spinlocking and sampling between pulses. Using this technique on polycrystalline adamantane, a large

  6. Blue single photon emission up to 200 K from an InGaN quantum dot in AlGaN nanowire

    NASA Astrophysics Data System (ADS)

    Deshpande, Saniya; Das, Ayan; Bhattacharya, Pallab

    2013-04-01

    We demonstrate polarized blue single photon emission up to 200 K from an In0.2Ga0.8N quantum dot in a single Al0.1Ga0.9N nanowire. The InGaN/AlGaN dot-in-nanowire heterostructure was grown on (111) silicon by plasma assisted molecular beam epitaxy. Nanowires dispersed on a silicon substrate show sharp exciton and biexciton transitions in the micro-photoluminescence spectra. Second-order correlation measurements performed under pulsed excitation at the biexciton wavelength confirm single photon emission, with a g(2)(0) of 0.43 at 200 K. The emitted photons have a short radiative lifetime of 0.7 ns and are linearly polarized along the c-axis of the nanowire with a degree of polarization of 78%.

  7. Multiple network alignment on quantum computers

    NASA Astrophysics Data System (ADS)

    Daskin, Anmer; Grama, Ananth; Kais, Sabre

    2014-12-01

    Comparative analyses of graph-structured datasets underly diverse problems. Examples of these problems include identification of conserved functional components (biochemical interactions) across species, structural similarity of large biomolecules, and recurring patterns of interactions in social networks. A large class of such analyses methods quantify the topological similarity of nodes across networks. The resulting correspondence of nodes across networks, also called node alignment, can be used to identify invariant subgraphs across the input graphs. Given graphs as input, alignment algorithms use topological information to assign a similarity score to each -tuple of nodes, with elements (nodes) drawn from each of the input graphs. Nodes are considered similar if their neighbors are also similar. An alternate, equivalent view of these network alignment algorithms is to consider the Kronecker product of the input graphs and to identify high-ranked nodes in the Kronecker product graph. Conventional methods such as PageRank and HITS (Hypertext-Induced Topic Selection) can be used for this purpose. These methods typically require computation of the principal eigenvector of a suitably modified Kronecker product matrix of the input graphs. We adopt this alternate view of the problem to address the problem of multiple network alignment. Using the phase estimation algorithm, we show that the multiple network alignment problem can be efficiently solved on quantum computers. We characterize the accuracy and performance of our method and show that it can deliver exponential speedups over conventional (non-quantum) methods.

  8. Study of correlations in molecular motion by multiple quantum NMR

    NASA Astrophysics Data System (ADS)

    Tang, J. H.

    1981-11-01

    The theoretical background of spin Hamiltonians, the density matrix formalism of multiple quantum NMR are discussed as well as creation and detection of multiple quantum coherence by multiple pulse sequence. Prototype multiple quantum spectra of oriented benzene are presented. Redfield relaxation theory and the application of multiple quantum NMR to the study of correlations in fluctuations are considered. An oriented methyl group relaxed by paramagnetic impurities is examined and possible correlated motion between two coupled methyl groups is investigated by multiple quantum NMR. For a six spin system it is shown that the four quantum spectrum is sensitive to two body correlations, and serves a ready test of correlated motion. The spin lattice dynamics of orienting or tunneling methyl groups (CH3 and CD3) at low temperatures and the anisotropic spin lattice relaxation of deuterated hexamethylbenzene, caused by the sixfold reorientation of the molecules are described as well as NMR spectrometers.

  9. Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

    SciTech Connect

    Lekhal, K.; Damilano, B. De Mierry, P.; Vennéguès, P.; Ngo, H. T.; Rosales, D.; Gil, B.; Hussain, S.

    2015-04-06

    Yellow/amber (570–600 nm) emitting In{sub x}Ga{sub 1−x}N/Al{sub y}Ga{sub 1−y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1−x}N QWs by the Al{sub y}Ga{sub 1−y}N layers, respectively.

  10. Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

    SciTech Connect

    Guo, Wei Bryan, Zachary; Kirste, Ronny; Bryan, Isaac; Hussey, Lindsay; Bobea, Milena; Haidet, Brian; Collazo, Ramón; Sitar, Zlatko; Xie, Jinqiao; Mita, Seiji; Gerhold, Michael

    2014-03-14

    Optical gain spectra for ∼250 nm stimulated emission were compared in three different AlGaN-based structures grown on single crystalline AlN substrates: a single AlGaN film, a double heterostructure (DH), and a Multiple Quantum Well (MQW) structure; respective threshold pumping power densities of 700, 250, and 150 kW/cm{sup 2} were observed. Above threshold, the emission was transverse-electric polarized and as narrow as 1.8 nm without a cavity. The DH and MQW structures showed gain values of 50–60 cm{sup −1} when pumped at 1 MW/cm{sup 2}. The results demonstrated the excellent optical quality of the AlGaN-based heterostructures grown on AlN substrates and their potential for realizing electrically pumped sub-280 nm laser diodes.

  11. Multiple-state quantum Otto engine, 1D box system

    SciTech Connect

    Latifah, E.; Purwanto, A.

    2014-03-24

    Quantum heat engines produce work using quantum matter as their working substance. We studied adiabatic and isochoric processes and defined the general force according to quantum system. The processes and general force are used to evaluate a quantum Otto engine based on multiple-state of one dimensional box system and calculate the efficiency. As a result, the efficiency depends on the ratio of initial and final width of system under adiabatic processes.

  12. Multiple-state quantum Otto engine, 1D box system

    NASA Astrophysics Data System (ADS)

    Latifah, E.; Purwanto, A.

    2014-03-01

    Quantum heat engines produce work using quantum matter as their working substance. We studied adiabatic and isochoric processes and defined the general force according to quantum system. The processes and general force are used to evaluate a quantum Otto engine based on multiple-state of one dimensional box system and calculate the efficiency. As a result, the efficiency depends on the ratio of initial and final width of system under adiabatic processes.

  13. Multiple-Particle Interference and Quantum Error Correction

    NASA Astrophysics Data System (ADS)

    Steane, Andrew

    1996-11-01

    The concept of multiple-particle interference is discussed, using insights provided by the classical theory of error correcting codes. This leads to a discussion of error correction in a quantum communication channel or a quantum computer. Methods of error correction in the quantum regime are presented, and their limitations assessed. A quantum channel can recover from arbitrary decoherence of x qubits if K bits of quantum information are encoded using n quantum bits, where K/n can be greater than 1 - 2H (2x/n), but must be less than 1 - 2H (x/n). This implies exponential reduction of decoherence with only a polynomial increase in the computing resources required. Therefore quantum computation can be made free of errors in the presence of physically realistic levels of decoherence. The methods also allow isolation of quantum communication from noise and evesdropping (quantum privacy amplification).

  14. Efficient quantum transmission in multiple-source networks.

    PubMed

    Luo, Ming-Xing; Xu, Gang; Chen, Xiu-Bo; Yang, Yi-Xian; Wang, Xiaojun

    2014-04-02

    A difficult problem in quantum network communications is how to efficiently transmit quantum information over large-scale networks with common channels. We propose a solution by developing a quantum encoding approach. Different quantum states are encoded into a coherent superposition state using quantum linear optics. The transmission congestion in the common channel may be avoided by transmitting the superposition state. For further decoding and continued transmission, special phase transformations are applied to incoming quantum states using phase shifters such that decoders can distinguish outgoing quantum states. These phase shifters may be precisely controlled using classical chaos synchronization via additional classical channels. Based on this design and the reduction of multiple-source network under the assumption of restricted maximum-flow, the optimal scheme is proposed for specially quantized multiple-source network. In comparison with previous schemes, our scheme can greatly increase the transmission efficiency.

  15. Efficient Quantum Transmission in Multiple-Source Networks

    PubMed Central

    Luo, Ming-Xing; Xu, Gang; Chen, Xiu-Bo; Yang, Yi-Xian; Wang, Xiaojun

    2014-01-01

    A difficult problem in quantum network communications is how to efficiently transmit quantum information over large-scale networks with common channels. We propose a solution by developing a quantum encoding approach. Different quantum states are encoded into a coherent superposition state using quantum linear optics. The transmission congestion in the common channel may be avoided by transmitting the superposition state. For further decoding and continued transmission, special phase transformations are applied to incoming quantum states using phase shifters such that decoders can distinguish outgoing quantum states. These phase shifters may be precisely controlled using classical chaos synchronization via additional classical channels. Based on this design and the reduction of multiple-source network under the assumption of restricted maximum-flow, the optimal scheme is proposed for specially quantized multiple-source network. In comparison with previous schemes, our scheme can greatly increase the transmission efficiency. PMID:24691590

  16. Quantum broadcasting multiple blind signature with constant size

    NASA Astrophysics Data System (ADS)

    Xiao, Min; Li, Zhenli

    2016-09-01

    Using quantum homomorphic signature in quantum network, we propose a quantum broadcasting multiple blind signature scheme. Different from classical signature and current quantum signature schemes, the multi-signature proposed in our scheme is not generated by simply putting the individual signatures together, but by aggregating the individual signatures based on homomorphic property. Therefore, the size of the multi-signature is constant. Furthermore, based on a wide range of investigation for the security of existing quantum signature protocols, our protocol is designed to resist possible forgery attacks against signature and message from the various attack sources and disavowal attacks from participants.

  17. High-speed solar-blind UV photodetectors using high-Al content Al0.64Ga0.36N/Al0.34Ga0.66N multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Muhtadi, Sakib; Hwang, Seong Mo; Coleman, Antwon L.; Lunev, Alexander; Asif, Fatima; Chava, V. S. N.; Chandrashekhar, M. V. S.; Khan, Asif

    2017-01-01

    We demonstrate high-external quantum efficiency (˜50%) solar-blind AlGaN p-n junction photodetectors with high-Al content multiple quantum wells (MQWs). A peak responsivity of 0.1 A/W at 250 nm, which falls >103 by 280 nm, indicates that the optical absorption is dominated by the MQW structures. At a reverse bias of 0.5 V, the dark current is <0.1 pA. The readout RC-limited time response is measured as 0.4 µs, and an achievable detector RC-limited time response of 2 ns is estimated. The devices do not show internal gain, which accounts for their high speed.

  18. Quantum cosmological perturbations of multiple fluids

    NASA Astrophysics Data System (ADS)

    Peter, Patrick; Pinto-Neto, N.; Vitenti, Sandro D. P.

    2016-01-01

    The formalism to treat quantization and evolution of cosmological perturbations of multiple fluids is described. We first construct the Lagrangian for both the gravitational and matter parts, providing the necessary relevant variables and momenta leading to the quadratic Hamiltonian describing linear perturbations. The final Hamiltonian is obtained without assuming any equations of motions for the background variables. This general formalism is applied to the special case of two fluids, having in mind the usual radiation and matter mix which made most of our current Universe history. Quantization is achieved using an adiabatic expansion of the basis functions. This allows for an unambiguous definition of a vacuum state up to the given adiabatic order. Using this basis, we show that particle creation is well defined for a suitable choice of vacuum and canonical variables, so that the time evolution of the corresponding quantum fields is unitary. This provides constraints for setting initial conditions for an arbitrary number of fluids and background time evolution. We also show that the common choice of variables for quantization can lead to an ill-defined vacuum definition. Our formalism is not restricted to the case where the coupling between fields is small, but is only required to vary adiabatically with respect to the ultraviolet modes, thus paving the way to consistent descriptions of general models not restricted to single-field (or fluid).

  19. Secure Multiparty Quantum Computation for Summation and Multiplication

    NASA Astrophysics Data System (ADS)

    Shi, Run-Hua; Mu, Yi; Zhong, Hong; Cui, Jie; Zhang, Shun

    2016-01-01

    As a fundamental primitive, Secure Multiparty Summation and Multiplication can be used to build complex secure protocols for other multiparty computations, specially, numerical computations. However, there is still lack of systematical and efficient quantum methods to compute Secure Multiparty Summation and Multiplication. In this paper, we present a novel and efficient quantum approach to securely compute the summation and multiplication of multiparty private inputs, respectively. Compared to classical solutions, our proposed approach can ensure the unconditional security and the perfect privacy protection based on the physical principle of quantum mechanics.

  20. Secure Multiparty Quantum Computation for Summation and Multiplication

    PubMed Central

    Shi, Run-hua; Mu, Yi; Zhong, Hong; Cui, Jie; Zhang, Shun

    2016-01-01

    As a fundamental primitive, Secure Multiparty Summation and Multiplication can be used to build complex secure protocols for other multiparty computations, specially, numerical computations. However, there is still lack of systematical and efficient quantum methods to compute Secure Multiparty Summation and Multiplication. In this paper, we present a novel and efficient quantum approach to securely compute the summation and multiplication of multiparty private inputs, respectively. Compared to classical solutions, our proposed approach can ensure the unconditional security and the perfect privacy protection based on the physical principle of quantum mechanics. PMID:26792197

  1. Quantum filtering for multiple diffusive and Poissonian measurements

    NASA Astrophysics Data System (ADS)

    Emzir, Muhammad F.; Woolley, Matthew J.; Petersen, Ian R.

    2015-09-01

    We provide a rigorous derivation of a quantum filter for the case of multiple measurements being made on a quantum system. We consider a class of measurement processes which are functions of bosonic field operators, including combinations of diffusive and Poissonian processes. This covers the standard cases from quantum optics, where homodyne detection may be described as a diffusive process and photon counting may be described as a Poissonian process. We obtain a necessary and sufficient condition for any pair of such measurements taken at different output channels to satisfy a commutation relationship. Then, we derive a general, multiple-measurement quantum filter as an extension of a single-measurement quantum filter. As an application we explicitly obtain the quantum filter corresponding to homodyne detection and photon counting at the output ports of a beam splitter.

  2. Imaging Quantum Confinement in Multiple Graphene Quantum Dots

    NASA Astrophysics Data System (ADS)

    Wong, Dillon; Velasco, Jairo; Lee, Juwon; Rodriguez-Nieva, Joaquin; Kahn, Salman; Vo, Phong; Tsai, Hsinzon; Taniguchi, Takashi; Watanabe, Kenji; Zettl, Alex; Wang, Feng; Levitov, Leonid; Crommie, Michael

    Quantum dots provide a useful means for controlling the electronic and spin degrees of freedom of mesoscale and nanoscale materials. Here we demonstrate a new method for fabricating interacting graphene quantum dots that is compatible with electrostatic gating and visualization by way of scanning tunneling microscopy (STM). Using this new technique we have created and spatially characterized systems of two or more interacting quantum dots. Our results show that it is possible to engineer electronic wave functions in graphene with a high degree of spatial control.

  3. Optical properties of AlGaN nanowires synthesized via ion beam techniques

    NASA Astrophysics Data System (ADS)

    Parida, Santanu; Magudapathy, P.; Sivadasan, A. K.; Pandian, Ramanathaswamy; Dhara, Sandip

    2017-05-01

    AlGaN plays a vital role in hetero-structure high electron mobility transistors by employing a two-dimensional electron gas as an electron blocking layer in multi-quantum well light emitting diodes. Nevertheless, the incorporation of Al into GaN for the formation of the AlGaN alloy is limited by the diffusion barrier formed by instant nitridation of Al adatoms by reactive atomic N. The incorporation of Al above the miscibility limit, however, can be achieved by the ion beam technique. The well known ion beam mixing (IBM) technique was carried out with the help of Ar+ irradiation for different fluences. A novel approach was also adopted for the synthesis of AlGaN by the process of post-irradiation diffusion (PID) as a comparative study with the IBM technique. The optical investigations of AlGaN nanowires, synthesized via two different methods of ion beam processing, are reported. The effect of irradiation fluence and post-irradiation annealing temperature on the random alloy formation was studied by the vibrational and photoluminescence (PL) spectroscopic studies. Vibrational studies show one-mode phonon behavior corresponding to the longitudinal optical (LO) mode of A1 symmetry [A1(LO)] for the wurtzite phase of AlGaN nanowires in the random alloy model. A maximum Al atomic percentage of ˜6.3%-6.7% was calculated with the help of band bowing formalism from the Raman spectral analysis for samples synthesized in IBM and PID processes. PL studies show the extent of defects present in these samples.

  4. Effect of Multiple Scattering in a Quantum Well

    NASA Astrophysics Data System (ADS)

    Sheng, Hanyu; Chua, Soo-Jin; Sinkkonen, Juha

    This paper gives a potentially useful application to quantum well of the theory of scattering in the Born approximation. The simple formulae for multiple scattering in a quantum well of double barrier structure are derived. The multiple scattering parameter is the complex mean free path. We show that the amplitude of the coherent wave will be exponentially attenuated and the phase of the wave will be delayed because of the scattering.

  5. Frequency domain quantum optimal control under multiple constraints

    NASA Astrophysics Data System (ADS)

    Shu, Chuan-Cun; Ho, Tak-San; Xing, Xi; Rabitz, Herschel

    2016-03-01

    Optimal control of quantum systems with complex constrained external fields is one of the longstanding theoretical and numerical challenges at the frontier of quantum control research. Here, we present a theoretical method that can be utilized to optimize the control fields subject to multiple constraints while guaranteeing monotonic convergence towards desired physical objectives. This optimization method is formulated in the frequency domain in line with the current ultrafast pulse shaping technique, providing the possibility for performing quantum optimal control simulations and experiments in a unified fashion. For illustrations, this method is successfully employed to perform multiple constraint spectral-phase-only optimization for maximizing resonant multiphoton transitions with desired pulses.

  6. Computer studies of multiple-quantum spin dynamics

    SciTech Connect

    Murdoch, J.B.

    1982-11-01

    The excitation and detection of multiple-quantum (MQ) transitions in Fourier transform NMR spectroscopy is an interesting problem in the quantum mechanical dynamics of spin systems as well as an important new technique for investigation of molecular structure. In particular, multiple-quantum spectroscopy can be used to simplify overly complex spectra or to separate the various interactions between a nucleus and its environment. The emphasis of this work is on computer simulation of spin-system evolution to better relate theory and experiment.

  7. Study of correlations in molecular motion by multiple quantum NMR

    SciTech Connect

    Tang, J.H.

    1981-11-01

    Nuclear magnetic resonance is a very useful tool for characterizing molecular configurations through the measurement of transition frequencies and dipolar couplings. The measurement of spectral lineshapes, spin-lattice relaxation times, and transverse relaxation times also provide us with valuable information about correlations in molecular motion. The new technique of multiple quantum nuclear magnetic resonance has numerous advantages over the conventional single quantum NMR techniques in obtaining information about static and dynamic interactions of coupled spin systems. In the first two chapters, the theoretical background of spin Hamiltonians and the density matrix formalism of multiple quantum NMR is discussed. The creation and detection of multiple quantum coherence by multiple pulse sequence are discussed. Prototype multiple quantum spectra of oriented benzene are presented. Redfield relaxation theory and the application of multiple quantum NMR to the study of correlations in fluctuations are presented. A specific example of an oriented methyl group relaxed by paramagnetic impurities is studied in detail. The study of possible correlated motion between two coupled methyl groups by multiple quantum NMR is presented. For a six spin system it is shown that the four-quantum spectrum is sensitive to two-body correlations, and serves a ready test of correlated motion. The study of the spin-lattice dynamics of orienting or tunneling methyl groups (CH/sub 3/ and CD/sub 3/) at low temperatures is presented. The anisotropic spin-lattice relaxation of deuterated hexamethylbenzene, caused by the sixfold reorientation of the molecules, is investigated, and the NMR spectrometers and other experimental details are discussed.

  8. Quantum search with multiple walk steps per oracle query

    NASA Astrophysics Data System (ADS)

    Wong, Thomas G.; Ambainis, Andris

    2015-08-01

    We identify a key difference between quantum search by discrete- and continuous-time quantum walks: a discrete-time walk typically performs one walk step per oracle query, whereas a continuous-time walk can effectively perform multiple walk steps per query while only counting query time. As a result, we show that continuous-time quantum walks can outperform their discrete-time counterparts, even though both achieve quadratic speedups over their corresponding classical random walks. To provide greater equity, we allow the discrete-time quantum walk to also take multiple walk steps per oracle query while only counting queries. Then it matches the continuous-time algorithm's runtime, but such that it is a cubic speedup over its corresponding classical random walk. This yields a greater-than-quadratic speedup for quantum search over its corresponding classical random walk.

  9. Radiation Hard AlGaN Detectors and Imager

    SciTech Connect

    2012-05-01

    Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

  10. Evolution of multiple quantum coherences with scaled dipolar Hamiltonian

    NASA Astrophysics Data System (ADS)

    Sánchez, Claudia M.; Buljubasich, Lisandro; Pastawski, Horacio M.; Chattah, Ana K.

    2017-08-01

    In this article, we introduce a pulse sequence which allows the monitoring of multiple quantum coherences distribution of correlated spin states developed with scaled dipolar Hamiltonian. The pulse sequence is a modification of our previous Proportionally Refocused Loschmidt echo (PRL echo) with phase increment, in order to verify the accuracy of the weighted coherent quantum dynamics. The experiments were carried out with different scaling factors to analyze the evolution of the total magnetization, the time dependence of the multiple quantum coherence orders, and the development of correlated spins clusters. In all cases, a strong dependence between the evolution rate and the weighting factor is observed. Remarkably, all the curves appeared overlapped in a single trend when plotted against the self-time, a new time scale that includes the scaling factor into the evolution time. In other words, the spin system displayed always the same quantum evolution, slowed down as the scaling factor decreases, confirming the high performance of the new pulse sequence.

  11. AlGaN solar-blind avalanche photodiodes with AlInN/AlGaN distributed Bragg reflectors

    NASA Astrophysics Data System (ADS)

    Yao, Chujun; Ye, Xuanchao; Sun, Rui; Yang, Guofeng; Wang, Jin; Lu, Yanan; Yan, Pengfei; Cao, Jintao

    2017-06-01

    AlGaN solar-blind avalanche photodiodes (APDs) with AlInN/AlGaN distributed Bragg reflectors (DBRs) operated at lower avalanche breakdown voltage are numerically demonstrated. The p-type AlGaN layer and the multiplicative layer with low Al composition are introduced to construct the polarization-induced electric field, which can significantly reduce the avalanche breakdown voltage of the APDs. Calculated results exhibit that the avalanche breakdown voltage of the designed APDs decrease by 13% compared with the conventional device structure. Simultaneously, an improved solar-blind spectral responsivity is achieved due to the inserted AlInN/AlGaN DBRs.

  12. Remote Entanglement by Coherent Multiplication of Concurrent Quantum Signals.

    PubMed

    Roy, Ananda; Jiang, Liang; Stone, A Douglas; Devoret, Michel

    2015-10-09

    Concurrent remote entanglement of distant, noninteracting quantum entities is a crucial function for quantum information processing. In contrast with the existing protocols which employ the addition of signals to generate entanglement between two remote qubits, the continuous variable protocol we present is based on the multiplication of signals. This protocol can be straightforwardly implemented by a novel Josephson junction mixing circuit. Our scheme would be able to generate provable entanglement even in the presence of practical imperfections: finite quantum efficiency of detectors and undesired photon loss in current state-of-the-art devices.

  13. Investigation of AlGaN-based deep-ultraviolet light-emitting diodes with composition-varying AlGaN multilayer barriers

    NASA Astrophysics Data System (ADS)

    Yin, Yi An; Wang, Naiyin; Fan, Guanghan; Zhang, Yong

    2014-12-01

    In this study, the characteristics of deep-ultraviolet light-emitting diodes (DUV-LEDs) with composition-varying AlGaN multilayer barriers are investigated numerically. The simulation results demonstrate that the proposed DUV-LEDs have better device performances, i.e., higher light output power and internal quantum efficiency, over their counterparts with typical single-layer AlGaN barriers. These improvements are attributed to the reduced markedly polarization-induced electrostatic field within the quantum wells (QWs), which is beneficial to enhance the electron-hole spatial overlap in QWs, suppress the electron leakage and increase the hole injection efficiency. Furthermore, the efficiency droop is also reduced significantly when the composition-varying AlGaN multilayer barriers are adopted.

  14. Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier

    NASA Astrophysics Data System (ADS)

    Jia, Chuanyu; Yu, Tongjun; Feng, Xiaohui; Wang, Kun; Zhang, Guoyi

    2016-09-01

    The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL.

  15. Optimum testing of multiple hypotheses in quantum detection theory

    NASA Technical Reports Server (NTRS)

    Yuen, H. P.; Kennedy, R. S.; Lax, M.

    1975-01-01

    The problem of specifying the optimum quantum detector in multiple hypotheses testing is considered for application to optical communications. The quantum digital detection problem is formulated as a linear programming problem on an infinite-dimensional space. A necessary and sufficient condition is derived by the application of a general duality theorem specifying the optimum detector in terms of a set of linear operator equations and inequalities. Existence of the optimum quantum detector is also established. The optimality of commuting detection operators is discussed in some examples. The structure and performance of the optimal receiver are derived for the quantum detection of narrow-band coherent orthogonal and simplex signals. It is shown that modal photon counting is asymptotically optimum in the limit of a large signaling alphabet and that the capacity goes to infinity in the absence of a bandwidth limitation.

  16. Multiple quantum magic-angle spinning using rotary resonance excitation

    NASA Astrophysics Data System (ADS)

    Vosegaard, Thomas; Florian, Pierre; Massiot, Dominique; Grandinetti, Philip J.

    2001-03-01

    We have discovered rotary resonances between rf field strength, ω1, and magic-angle spinning (MAS) frequency, ωR, which dramatically enhance the sensitivity of triple quantum preparation and mixing in the multiple-quantum MAS experiment, particularly for quadrupolar nuclei having low gyromagnetic ratios or experiencing strong quadrupole couplings. Triple quantum excitation efficiency minima occur when 2ω1=nωR, where n is an integer, with significant maxima occurring between these minima. For triple quantum mixing we observe maxima when ω1=nωR. In both preparation and mixing the pulse lengths required to reach maxima exceed one rotor period. We have combined these rotary resonance conditions into a new experiment called FASTER MQ-MAS, and have experimentally demonstrated a factor of 3 enhancement in sensitivity in comparison to conventional MQ-MAS.

  17. Multiple Quantum Wells for P T -Symmetric Phononic Crystals

    NASA Astrophysics Data System (ADS)

    Poshakinskiy, A. V.; Poddubny, A. N.; Fainstein, A.

    2016-11-01

    We demonstrate that the parity-time symmetry for sound is realized in laser-pumped multiple-quantum-well structures. Breaking of the parity-time symmetry for the phonons with wave vectors corresponding to the Bragg condition makes the structure a highly selective acoustic wave amplifier. Single-mode distributed feedback phonon lasing is predicted for structures with realistic parameters.

  18. Quantum theory of multiple-input-multiple-output Markovian feedback with diffusive measurements

    NASA Astrophysics Data System (ADS)

    Chia, A.; Wiseman, H. M.

    2011-07-01

    Feedback control engineers have been interested in multiple-input-multiple-output (MIMO) extensions of single-input-single-output (SISO) results of various kinds due to its rich mathematical structure and practical applications. An outstanding problem in quantum feedback control is the extension of the SISO theory of Markovian feedback by Wiseman and Milburn [Phys. Rev. Lett.PRLTAO0031-900710.1103/PhysRevLett.70.548 70, 548 (1993)] to multiple inputs and multiple outputs. Here we generalize the SISO homodyne-mediated feedback theory to allow for multiple inputs, multiple outputs, and arbitrary diffusive quantum measurements. We thus obtain a MIMO framework which resembles the SISO theory and whose additional mathematical structure is highlighted by the extensive use of vector-operator algebra.

  19. A SiGe/Si multiple quantum well avalanche photodetector

    NASA Astrophysics Data System (ADS)

    Sun, Po-Hsing; Chang, Shu-Tong; Chen, Yu-Chun; Lin, Hongchin

    2010-10-01

    The present work investigates the performance of APDs with a SiGe/Si multi-quantum well (MQW) structure, which was fabricated using ultrahigh-vacuum chemical vapor deposition (UHV/CVD). Absorption of radiation and avalanche multiplication occur in both SiGe/Si MQW and the i-SiGe layer. Intense photoluminescence (PL) from strained, epitaxial SiGe alloys grown using UHV/CVD was reported with multiple SiGe/Si MQW and i-SiGe layer. It was found that the avalanche multiplication occurred at about 7 V, when exceeding 7 V, the responsiveness and quantum efficiency rapidly increased. An APD consisting of an epitaxial SiGe/Si MQW as the active absorption layer with intense response in the 800-1500 nm wavelength range is also demonstrated.

  20. Detection of electromagnetic radiation using micromechanical multiple quantum wells structures

    DOEpatents

    Datskos, Panagiotis G [Knoxville, TN; Rajic, Slobodan [Knoxville, TN; Datskou, Irene [Knoxville, TN

    2007-07-17

    An apparatus and method for detecting electromagnetic radiation employs a deflectable micromechanical apparatus incorporating multiple quantum wells structures. When photons strike the quantum-well structure, physical stresses are created within the sensor, similar to a "bimetallic effect." The stresses cause the sensor to bend. The extent of deflection of the sensor can be measured through any of a variety of conventional means to provide a measurement of the photons striking the sensor. A large number of such sensors can be arranged in a two-dimensional array to provide imaging capability.

  1. Multiple-junction quantum cascade photodetectors for thermophotovoltaic energy conversion.

    PubMed

    Yin, Jian; Paiella, Roberto

    2010-01-18

    The use of intersubband transitions in quantum cascade structures for thermophotovoltaic energy conversion is investigated numerically. The intrinsic cascading scheme, spectral agility, and design flexibility of these structures make them ideally suited to the development of high efficiency multiple-junction thermophotovoltaic detectors. A specific implementation of this device concept is designed, based on bound-to-continuum intersubband transitions in large-conduction-band-offset In(0.7)Ga(0.3)As/AlAs(0.8)Sb(0.2) quantum wells. The device electrical characteristics in the presence of thermal radiation from a blackbody source at 1300 K are calculated, from which a maximum extracted power density of 1.4 W/cm(2) is determined. This value compares favorably with the present state-of-the-art in interband thermophotovoltaic energy conversion, indicating that quantum cascade photodetectors may provide a promising approach to improve energy extraction from thermal sources.

  2. Controllable multiple-quantum transitions in a T-shaped small quantum dot-ring system

    NASA Astrophysics Data System (ADS)

    Chen, Xiongwen; Chen, Baoju; Song, Kehui; Zhou, Guanghui

    2016-05-01

    Based on the tight-binding model and the slave boson mean field approximation, we investigate the electron transport properties in a small quantum dot (QD)-ring system. Namely, a strongly correlated QD not only attaches directly to two normal metallic electrodes, but also forms a magnetic control Aharonov-Bohm quantum ring with a few noninteracting QDs. We show that the parity effect, the Kondo effect, and the multiple Fano effects coexist in our system. Moreover, the parities, defined by the odd- and even-numbered energy levels in this system, can be switched by adjusting magnetic flux phase ϕ located at the center of the quantum ring, which induces multiple controllable Fano-interference energy pathways. Therefore, the constructive and destructive multi-Fano interference transition, the Kondo and Fano resonance transition at the Fermi level, the Fano resonance and ani-resonance transition are realized in the even parity system. They can also be observed in the odd parity system when one adjusts the phase ϕ and the gate voltage Vg applied to the noninteracting QDs. The multi-quantum transitions determine some interesting transport properties such as the current switch and its multi-flatsteps, the differential conductance switch at zero bias voltage and its oscillation or quantization at the low bias voltage. These results may be useful for the observation of multiple quantum effect interplays experimentally and the design of controllable QD-based device.

  3. Evolution of multiple quantum coherences with scaled dipolar Hamiltonian.

    PubMed

    Sánchez, Claudia M; Buljubasich, Lisandro; Pastawski, Horacio M; Chattah, Ana K

    2017-08-01

    In this article, we introduce a pulse sequence which allows the monitoring of multiple quantum coherences distribution of correlated spin states developed with scaled dipolar Hamiltonian. The pulse sequence is a modification of our previous Proportionally Refocused Loschmidt echo (PRL echo) with phase increment, in order to verify the accuracy of the weighted coherent quantum dynamics. The experiments were carried out with different scaling factors to analyze the evolution of the total magnetization, the time dependence of the multiple quantum coherence orders, and the development of correlated spins clusters. In all cases, a strong dependence between the evolution rate and the weighting factor is observed. Remarkably, all the curves appeared overlapped in a single trend when plotted against the self-time, a new time scale that includes the scaling factor into the evolution time. In other words, the spin system displayed always the same quantum evolution, slowed down as the scaling factor decreases, confirming the high performance of the new pulse sequence. Copyright © 2017 Elsevier Inc. All rights reserved.

  4. Improvement of a quantum broadcasting multiple blind signature scheme based on quantum teleportation

    NASA Astrophysics Data System (ADS)

    Zhang, Wei; Qiu, Daowen; Zou, Xiangfu

    2016-06-01

    Recently, a broadcasting multiple blind signature scheme based on quantum teleportation has been proposed for the first time. It is claimed to have unconditional security and properties of quantum multiple signature and quantum blind signature. In this paper, we analyze the security of the protocol and show that each signatory can learn the signed message by a single-particle measurement and the signed message can be modified at random by any attacker according to the scheme. Furthermore, there are some participant attacks and external attacks existing in the scheme. Finally, we present an improved scheme and show that it can resist all of the mentioned attacks. Additionally, the secret keys can be used again and again, making it more efficient and practical.

  5. Multiple Potts models coupled to two-dimensional quantum gravity

    NASA Astrophysics Data System (ADS)

    Baillie, C. F.; Johnston, D. A.

    1992-07-01

    We perform Monte Carlo simulations using the Wolff cluster algorithm of multiple q=2, 3, 4 state Potts models on dynamical phi-cubed graphs of spherical topology in order to investigate the c>1 region of two-dimensional quantum gravity. Contrary to naive expectation we find no obvious signs of pathological behaviour for c>1. We discuss the results in the light of suggestions that have been made for a modified DDK ansatz for c>1.

  6. A broadcasting multiple blind signature scheme based on quantum GHZ entanglement

    NASA Astrophysics Data System (ADS)

    Tian, Yuan; Chen, Hong; Gao, Yan; Zhuang, Honglin; Lian, Haigang; Han, Zhengping; Yu, Peng; Kong, Xiangze; Wen, Xiaojun

    2014-09-01

    Using the correlation of the GHZ triplet states, a broadcasting multiple blind signature scheme is proposed. Different from classical multiple signature and current quantum signature schemes, which could only deliver either multiple signature or unconditional security, our scheme guarantees both by adopting quantum key preparation, quantum encryption algorithm and quantum entanglement. Our proposed scheme has the properties of multiple signature, blindness, non-disavowal, non-forgery and traceability. To the best of our knowledge, we are the first to propose the broadcasting multiple blind signature of quantum cryptography.

  7. Multiple Exciton Generation in PbSe Quantum Dots and Quantum Dot Solar Cells

    SciTech Connect

    Beard, M. C.; Semonin, O. E.; Nozik, A. J.; Midgett, A. G.; Luther, J. M.

    2012-01-01

    Multiple exciton generation in quantum dots (QDs) has been intensively studied as a way to enhance solar energy conversion by channeling the excess photon energy (energy greater than the bandgap) to produce multiple electron-hole pairs. Among other useful properties, quantum confinement can both increase Coulomb interactions that drive the MEG process and decrease the electron-phonon coupling that cools hot-excitons in bulk semiconductors. We have demonstrated that MEG in PbSe QDs is about two times as efficient at producing multiple electron-hole pairs than bulk PbSe. I will discuss our recent results investigating MEG in PbSe, PbS and PbSxSe1-x, which exhibits an interesting size-dependence of the MEG efficiency. Thin films of electronically coupled PbSe QDs have shown promise in simple photon-to-electron conversion architectures with power conversion efficiencies above 5%. We recently reported an enhancement in the photocurrent resulting from MEG in PbSe QD-based solar cells. We find that the external quantum efficiency (spectrally resolved ratio of collected charge carriers to incident photons) peaked at 114% in the best devices measured, with an internal quantum efficiency of 130%. These results demonstrate that MEG charge carriers can be collected in suitably designed QD solar cells. We compare our results to transient absorption measurements and find reasonable agreement.

  8. Incompatible multiple consistent sets of histories and measures of quantumness

    NASA Astrophysics Data System (ADS)

    Halliwell, J. J.

    2017-07-01

    In the consistent histories approach to quantum theory probabilities are assigned to histories subject to a consistency condition of negligible interference. The approach has the feature that a given physical situation admits multiple sets of consistent histories that cannot in general be united into a single consistent set, leading to a number of counterintuitive or contrary properties if propositions from different consistent sets are combined indiscriminately. An alternative viewpoint is proposed in which multiple consistent sets are classified according to whether or not there exists any unifying probability for combinations of incompatible sets which replicates the consistent histories result when restricted to a single consistent set. A number of examples are exhibited in which this classification can be made, in some cases with the assistance of the Bell, Clauser-Horne-Shimony-Holt, or Leggett-Garg inequalities together with Fine's theorem. When a unifying probability exists logical deductions in different consistent sets can in fact be combined, an extension of the "single framework rule." It is argued that this classification coincides with intuitive notions of the boundary between classical and quantum regimes and in particular, the absence of a unifying probability for certain combinations of consistent sets is regarded as a measure of the "quantumness" of the system. The proposed approach and results are closely related to recent work on the classification of quasiprobabilities and this connection is discussed.

  9. Compositional inhomogeneities in AlGaN thin films grown by molecular beam epitaxy: Effect on MSM UV photodetectors

    NASA Astrophysics Data System (ADS)

    Pramanik, Pallabi; Sen, Sayantani; Singha, Chirantan; Roy, Abhra Shankar; Das, Alakananda; Sen, Susanta; Bhattacharyya, A.

    2016-10-01

    Ultraviolet (UV) MSM photodetectors (PD) based on AlGaN alloys find many applications, including flame sensing. In this work we investigate the dependence of AlGaN based photodetectors grown by MBE on the kinetics of growth. MSM photodetectors were fabricated in the interdigitated configuration with Ni/Au contacts having 400 μm finger length and 10 μm finger spacing. Bulk Al0.4Ga0.6N films were grown on to sapphire substrates using an AlN buffer layer. A series of PDs were developed using the Al0.4Ga0.6N films grown under different group III/V flux ratios ranging from stoichiometric conditions to much higher than unity. Upon testing, it was observed that the otherwise identical photodetectors show significant decrease in dark current as AlGaN deposition conditions change from stoichiometric to excess group III, due to reduction of unintentional incorporation of oxygen-related point defects. In addition, the intensity and spectral dependence of the photocurrent also change, showing an extended low energy tail for the former and a sharp and prominent excitonic peak for the latter. The optical transmission measurements indicate a variation in Urbach energy with deposition conditions of the AlGaN films, although they have the same absorption edge. While all samples show a single red-shifted photoluminescence peak at room temperature, upon cooling, multiple higher energy peaks appear in the photoluminescence (PL) spectra, indicating that the alloys contain complex compositional inhomogeneities. Two types of alloy fluctuations, determined by the growth conditions, have been identified that modulate the optoelectronic properties of AlGaN by changing the spatial localization of excitons, thereby altering their stability. We identified that growth under stoichiometric conditions leads to compositional inhomogeneities that play a detrimental role in the operation of MSM photodetectors, which reduces the sharpness of the sensitivity edge, while growth under excess metal

  10. Thermodynamics of quantum systems with multiple conserved quantities

    NASA Astrophysics Data System (ADS)

    Guryanova, Yelena; Popescu, Sandu; Short, Anthony J.; Silva, Ralph; Skrzypczyk, Paul

    2016-07-01

    Recently, there has been much progress in understanding the thermodynamics of quantum systems, even for small individual systems. Most of this work has focused on the standard case where energy is the only conserved quantity. Here we consider a generalization of this work to deal with multiple conserved quantities. Each conserved quantity, which, importantly, need not commute with the rest, can be extracted and stored in its own battery. Unlike the standard case, in which the amount of extractable energy is constrained, here there is no limit on how much of any individual conserved quantity can be extracted. However, other conserved quantities must be supplied, and the second law constrains the combination of extractable quantities and the trade-offs between them. We present explicit protocols that allow us to perform arbitrarily good trade-offs and extract arbitrarily good combinations of conserved quantities from individual quantum systems.

  11. Thermodynamics of quantum systems with multiple conserved quantities

    PubMed Central

    Guryanova, Yelena; Popescu, Sandu; Short, Anthony J.; Silva, Ralph; Skrzypczyk, Paul

    2016-01-01

    Recently, there has been much progress in understanding the thermodynamics of quantum systems, even for small individual systems. Most of this work has focused on the standard case where energy is the only conserved quantity. Here we consider a generalization of this work to deal with multiple conserved quantities. Each conserved quantity, which, importantly, need not commute with the rest, can be extracted and stored in its own battery. Unlike the standard case, in which the amount of extractable energy is constrained, here there is no limit on how much of any individual conserved quantity can be extracted. However, other conserved quantities must be supplied, and the second law constrains the combination of extractable quantities and the trade-offs between them. We present explicit protocols that allow us to perform arbitrarily good trade-offs and extract arbitrarily good combinations of conserved quantities from individual quantum systems. PMID:27384384

  12. Robust Multiple-Range Coherent Quantum State Transfer

    NASA Astrophysics Data System (ADS)

    Chen, Bing; Peng, Yan-Dong; Li, Yong; Qian, Xiao-Feng

    2016-07-01

    We propose a multiple-range quantum communication channel to realize coherent two-way quantum state transport with high fidelity. In our scheme, an information carrier (a qubit) and its remote partner are both adiabatically coupled to the same data bus, i.e., an N-site tight-binding chain that has a single defect at the center. At the weak interaction regime, our system is effectively equivalent to a three level system of which a coherent superposition of the two carrier states constitutes a dark state. The adiabatic coupling allows a well controllable information exchange timing via the dark state between the two carriers. Numerical results show that our scheme is robust and efficient under practically inevitable perturbative defects of the data bus as well as environmental dephasing noise.

  13. Robust Multiple-Range Coherent Quantum State Transfer.

    PubMed

    Chen, Bing; Peng, Yan-Dong; Li, Yong; Qian, Xiao-Feng

    2016-07-01

    We propose a multiple-range quantum communication channel to realize coherent two-way quantum state transport with high fidelity. In our scheme, an information carrier (a qubit) and its remote partner are both adiabatically coupled to the same data bus, i.e., an N-site tight-binding chain that has a single defect at the center. At the weak interaction regime, our system is effectively equivalent to a three level system of which a coherent superposition of the two carrier states constitutes a dark state. The adiabatic coupling allows a well controllable information exchange timing via the dark state between the two carriers. Numerical results show that our scheme is robust and efficient under practically inevitable perturbative defects of the data bus as well as environmental dephasing noise.

  14. Robust Multiple-Range Coherent Quantum State Transfer

    PubMed Central

    Chen, Bing; Peng, Yan-Dong; Li, Yong; Qian, Xiao-Feng

    2016-01-01

    We propose a multiple-range quantum communication channel to realize coherent two-way quantum state transport with high fidelity. In our scheme, an information carrier (a qubit) and its remote partner are both adiabatically coupled to the same data bus, i.e., an N-site tight-binding chain that has a single defect at the center. At the weak interaction regime, our system is effectively equivalent to a three level system of which a coherent superposition of the two carrier states constitutes a dark state. The adiabatic coupling allows a well controllable information exchange timing via the dark state between the two carriers. Numerical results show that our scheme is robust and efficient under practically inevitable perturbative defects of the data bus as well as environmental dephasing noise. PMID:27364891

  15. Development of GaN/AlGaN Terahertz Quantum Cascade Laser

    DTIC Science & Technology

    2008-11-19

    AFOSR-Taiwan Nanoscience Initiative Project Final Report Project Title Development of GaN /AlGaN Terahertz Quantum Cascade Laser...DATES COVERED 14-06-2007 to 13-06-2008 4. TITLE AND SUBTITLE Development of GaN -Based Terahertz Quantum Cascade Laser 5a. CONTRACT NUMBER...the GaN /AlGaN active region for terahertz quantum cascade lasers using MOCVD system based on the quantum cascade structure proposed by Prof. Greg Sun

  16. Trap-assisted tunneling in AlGaN avalanche photodiodes

    NASA Astrophysics Data System (ADS)

    Shao, Z. G.; Gu, Q. J.; Yang, X. F.; Zhang, J.; Kuang, Y. W.; Zhang, D. B.; Yu, H. L.; Hong, X. K.; Feng, J. F.; Liu, Y. S.

    2017-06-01

    We fabricated AlGaN solar-blind avalanche photodiodes (APDs) that were based on separate absorption and multiplication (SAM) structures. It was determined experimentally that the dark current in these APDs is rapidly enhanced when the applied voltage exceeds 52 V. Theoretical analyses demonstrated that the breakdown voltage at 52 V is mainly related to the local trap-assisted tunneling effect. Because the dark current is mainly dependent on the trap states as a result of modification of the lifetimes of the electrons in the trap states, the tunneling processes can be modulated effectively by tuning the trap energy level, the trap density, and the tunnel mass.

  17. Quantum canonical ensemble and correlation femtoscopy at fixed multiplicities

    NASA Astrophysics Data System (ADS)

    Akkelin, S. V.; Sinyukov, Yu. M.

    2016-07-01

    Identical particle correlations at fixed multiplicity are considered by means of quantum canonical ensemble of finite systems. We calculate one-particle momentum spectra and two-particle Bose-Einstein correlation functions in the ideal gas by using a recurrence relation for the partition function. Within such a model we investigate the validity of the thermal Wick's theorem and its applicability for decomposition of the two-particle distribution function. The dependence of the Bose-Einstein correlation parameters on the average momentum of the particle pair is also investigated. Specifically, we present the analytical formulas that allow one to estimate the effect of suppressing the correlation functions in a finite canonical system. The results can be used for the femtoscopy analysis of the A +A and p +p collisions with selected (fixed) multiplicity.

  18. Quantum transport in multiple-barrier resonant-tunneling devices

    NASA Astrophysics Data System (ADS)

    Newaz, A. K. M.

    I have studied experimentally the quantum transport in multiple-barrier resonant-tunneling devices, namely double-barrier resonant-tunneling diodes (DBRTD) and triple-barrier resonant-tunneling diodes (TBRTD), to understand the tunneling processes in multiple-barrier resonant structures. We have performed various types of transport measurements, such as current, conductance, resonant magnetotunneling spectroscopy and shot noise measurements at low temperature (T=4.2K). To test the validity of the in-plane momentum conservation rule when electrons tunnel through a multiple-barrier resonant-tunneling device, I have studied in details the current and conductance with and without magnetic field perpendicular to the interfaces. We have found conclusive evidence that though this conservation rule governs the tunneling processes in DBRTD, the conservation rule breaks down in TBRTD. In addition, I have observed profound effect of nonparabolicity in the tunneling processes. By measuring the shot noise in TBRTDs at low temperature, I have found that the shot noise in a TBRTD is reduced over the Poissonian value, 2 eI, whenever the differential conductance is positive and is enhanced over 2eI when the differential conductance is negative. This behavior, although qualitatively similar to that found in DBRTD, differs from it in important details. In TBRTDs the noise reduction is considerably greater than that predicted by a semiclassical model, and the enhancement does not correlate with the strength of the negative differential conductance. Moreover, I have not observed any signature of the effect of the coherent tunneling on the shot noise suppression in coherently coupled TBRTDs. This suggests that the phase coherence does not have any effect on the shot noise suppression. On the other hand, the failure of a semiclassical model to explain shot noise suppression suggests an incomplete understanding of the noise properties of multiple-barrier heterostructures and a need for

  19. Coherent nanocavity structures for enhancement in internal quantum efficiency of III-nitride multiple quantum wells

    SciTech Connect

    Kim, T.; Liu, B.; Smith, R.; Athanasiou, M.; Gong, Y.; Wang, T.

    2014-04-21

    A “coherent” nanocavity structure has been designed on two-dimensional well-ordered InGaN/GaN nanodisk arrays with an emission wavelength in the green spectral region, leading to a massive enhancement in resonance mode in the green spectra region. By means of a cost-effective nanosphere lithography technique, we have fabricated such a structure on an InGaN/GaN multiple quantum well epiwafer and have observed the “coherent” nanocavity effect, which leads to an enhanced spontaneous emission (SE) rate. The enhanced SE rate has been confirmed by time resolved photoluminescence measurements. Due to the coherent nanocavity effect, we have achieved a massive improvement in internal quantum efficiency with a factor of 88, compared with the as-grown sample, which could be significant to bridge the “green gap” in solid-state lighting.

  20. Enhancement of blue InGaN light-emitting diodes by using AlGaN increased composition-graded barriers

    NASA Astrophysics Data System (ADS)

    Yan, Lei; Zhiqiang, Liu; Miao, He; Xiaoyan, Yi; Junxi, Wang; Jinmin, Li; Shuwen, Zheng; Shuti, Li

    2015-05-01

    The characteristics of nitride-based blue light-emitting diodes (LEDs) with AlGaN composition-graded barriers are analyzed numerically. The carrier concentrations in the quantum wells (QWs), the energy band diagrams, the electrostatic fields, and the light output power are investigated by APSYS software. The simulation results show that the LED with AlGaN composition-graded barriers has a better performance than its AlGaN/InGaN counterpart owing to the increase of hole injection and the enhancement of electron confinement. The simulation results also suggest that the output power is enhanced significantly and the efficiency droop is markedly improved when the AlGaN barriers are replaced by AlGaN composition-graded barriers. Project supported by the National High Technology Program of China (Nos. 2011AA03A105, 2013AA03A101), the National Natural Science Foundation of China (Nos. 61306051, 61306050, 11474105), the Beijing Municipal Science and Technology Project (No. D12110300140000), the National Basic Research Program of China (No. 2011CB301902), the Industry-Academia-Research Union Special Fund of Guangdong Province of China (No. 2012B091000169), the Science & Technology Innovation Platform of Industry-Academia-Research Union of Guangdong Province-Ministry Cooperation Special Fund of China (No. 2012B090600038), the Specialized Research Fund for the Doctoral Program of Higher Education (No. 20134407110008), and the Science research innovation foundation of South China Normal University of China (No. 2013kyjj041).

  1. Electron-interface phonon interaction in multiple quantum well structures

    NASA Astrophysics Data System (ADS)

    Sun, J. P.; Teng, H. B.; Haddad, G. I.; Stroscio, M. A.

    1998-08-01

    Intersubband relaxation rates due to electron interactions with the interface phonons are evaluated for multiple quantum well structures designed for step quantum well lasers operating at mid-infrared to submillimetre wavelengths. The interface phonon modes and electron-phonon interaction Hamiltonians for the structures are derived using the transfer matrix method, based on the macroscopic dielectric continuum model, whereas the electron wavefunctions are obtained by solving the Schrödinger equation. Fermi's golden rule is employed to calculate the electron relaxation rates between the subbands in these structures. The relaxation rates for two different structures are examined and compared with those calculated using the bulk phonon modes and the Fröhlich interaction Hamiltonian. The sum rule for the relationship between the form factors of the various localized phonon modes and the bulk phonon modes is verified. The results obtained in this work illustrate that the transfer matrix method provides a convenient way for deriving the properties of the interface phonon modes in different structures of current interest and that, for preferential electron relaxation in intersubband laser structures, the effects of the interface phonon modes are significant and should be considered for optimal design of these laser structures.

  2. Rank-based model selection for multiple ions quantum tomography

    NASA Astrophysics Data System (ADS)

    Guţă, Mădălin; Kypraios, Theodore; Dryden, Ian

    2012-10-01

    The statistical analysis of measurement data has become a key component of many quantum engineering experiments. As standard full state tomography becomes unfeasible for large dimensional quantum systems, one needs to exploit prior information and the ‘sparsity’ properties of the experimental state in order to reduce the dimensionality of the estimation problem. In this paper we propose model selection as a general principle for finding the simplest, or most parsimonious explanation of the data, by fitting different models and choosing the estimator with the best trade-off between likelihood fit and model complexity. We apply two well established model selection methods—the Akaike information criterion (AIC) and the Bayesian information criterion (BIC)—two models consisting of states of fixed rank and datasets such as are currently produced in multiple ions experiments. We test the performance of AIC and BIC on randomly chosen low rank states of four ions, and study the dependence of the selected rank with the number of measurement repetitions for one ion states. We then apply the methods to real data from a four ions experiment aimed at creating a Smolin state of rank 4. By applying the two methods together with the Pearson χ2 test we conclude that the data can be suitably described with a model whose rank is between 7 and 9. Additionally we find that the mean square error of the maximum likelihood estimator for pure states is close to that of the optimal over all possible measurements.

  3. Emission properties and thermal annealing of InGaN/GaN multiple quantum wells with different protection layers

    NASA Astrophysics Data System (ADS)

    Cho, H. K.; Park, T. E.; Kim, D. C.; Shin, J. E.; Lee, J. S.

    2004-10-01

    We investigated the effect of two-monolayer thick protection layers of GaN and AlGaN at the well growth temperature after the growth of InGaN well in InGaN/GaN MQW structures by MOCVD. The protection layers were very effective in inhibiting the re-evaporation of indium atoms regardless of the growth of GaN barriers at high temperature from TEM and PL. In addition, the use of GaN barrier grown at high temperature using GaN protection layers improved the emission efficiency due to the growth of high quality GaN without indium desorption. From the thermal treatment of as-grown samples, the redshift of emission was observed, which was ascribed to the increased quantum confined Stark effect by thermal stress, showing negligible indium gathering and atomic intermixing.

  4. Quantum teleportation scheme by selecting one of multiple output ports

    NASA Astrophysics Data System (ADS)

    Ishizaka, Satoshi; Hiroshima, Tohya

    2009-04-01

    The scheme of quantum teleportation, where Bob has multiple (N) output ports and obtains the teleported state by simply selecting one of the N ports, is thoroughly studied. We consider both the deterministic version and probabilistic version of the teleportation scheme aiming to teleport an unknown state of a qubit. Moreover, we consider two cases for each version: (i) the state employed for the teleportation is fixed to a maximally entangled state and (ii) the state is also optimized as well as Alice’s measurement. We analytically determine the optimal protocols for all the four cases and show the corresponding optimal fidelity or optimal success probability. All these protocols can achieve the perfect teleportation in the asymptotic limit of N→∞ . The entanglement properties of the teleportation scheme are also discussed.

  5. Multiple particle production processes in the light'' of quantum optics

    SciTech Connect

    Friedlander, E.M.

    1990-09-01

    Ever since the observation that high-energy nuclear active'' cosmic-ray particles create bunches of penetrating particles upon hitting targets, a controversy has raged about whether these secondaries are created in a single act'' or whether many hadrons are just the result of an intra-nuclear cascade, yielding one meson in every step. I cannot escape the impression that: the latter kind of model appeals naturally as a consequence of an innate bio-morphism in our way of thinking and that in one guise or another it has tenaciously survived to this day, also for hadron-hadron collisions, via multi-peripheral models to the modern parton shower approach. Indeed, from the very beginning of theoretical consideration of multiparticle production, the possibility of many particles arising from a single hot'' system has been explored, with many fruitful results, not the least of which are the s{sup 1/4} dependence of the mean produced particle multiplicity and the thermal'' shape of the P{sub T} spectra. An important consequence of the thermodynamical-hydrodynamical models is that particle emission is treated in analogy to black-body radiation, implying for the secondaries a set of specific Quantum-Statistical properties, very similar to those observed in quantum optics. From here on I shall try to review a number of implications and applications of this QS analogy in the study of multiplicity distributions of the produced secondaries. I will touch only in passing another very important topic of this class, the Bose-Einstein two-particle correlations.

  6. Experimental Generation of Multiple Quantum Correlated Beams from Hot Rubidium Vapor

    NASA Astrophysics Data System (ADS)

    Qin, Zhongzhong; Cao, Leiming; Wang, Hailong; Marino, A. M.; Zhang, Weiping; Jing, Jietai

    2014-07-01

    Quantum correlations and entanglement shared among multiple quantum modes are important for both fundamental science and the future development of quantum technologies. This development will also require an efficient quantum interface between multimode quantum light sources and atomic ensembles, which makes it necessary to implement multimode quantum light sources that match the atomic transitions. Here, we report on such a source that provides a method for generating quantum correlated beams that can be extended to a large number of modes by using multiple four-wave mixing (FWM) processes in hot rubidium vapor. Experimentally, we show that two cascaded FWM processes produce strong quantum correlations between three bright beams but not between any two of them. In addition, the intensity-difference squeezing is enhanced with the cascaded system to -7.0±0.1 dB from the -5.5±0.1/-4.5±0.1 dB squeezing obtained with only one FWM process. One of the main advantages of our system is that as the number of quantum modes increases, so does the total degree of quantum correlations. The proposed method is also immune to phase instabilities due to its phase insensitive nature, can easily be extended to multiple modes, and has potential applications in the production of multiple quantum correlated images.

  7. Extreme Radiation Hardness and Space Qualification of AlGaN Optoelectronic Devices

    SciTech Connect

    Sun, Ke-Xun; Balakrishnan, Kathik; Hultgren, Eric; Goebel, John; Bilenko, Yuri; Yang, Jinwei; Sun, Wenhong; Shatalov, Max; Hu, Xuhong; Gaska, Remis

    2010-09-21

    Unprecedented radiation hardness and environment robustness are required in the new generation of high energy density physics (HEDP) experiments and deep space exploration. National Ignition Facility (NIF) break-even shots will have a neutron yield of 1015 or higher. The Europa Jupiter System Mission (EJSM) mission instruments will be irradiated with a total fluence of 1012 protons/cm2 during the space journey. In addition, large temperature variations and mechanical shocks are expected in these applications under extreme conditions. Hefty radiation and thermal shields are required for Si and GaAs based electronics and optoelectronics devices. However, for direct illumination and imaging applications, shielding is not a viable option. It is an urgent task to search for new semiconductor technologies and to develop radiation hard and environmentally robust optoelectronic devices. We will report on our latest systematic experimental studies on radiation hardness and space qualifications of AlGaN optoelectronic devices: Deep UV Light Emitting Diodes (DUV LEDs) and solarblind UV Photodiodes (PDs). For custom designed AlGaN DUV LEDs with a central emission wavelength of 255 nm, we have demonstrated its extreme radiation hardness up to 2x1012 protons/cm2 with 63.9 MeV proton beams. We have demonstrated an operation lifetime of over 26,000 hours in a nitrogen rich environment, and 23,000 hours of operation in vacuum without significant power drop and spectral shift. The DUV LEDs with multiple packaging styles have passed stringent space qualifications with 14 g random vibrations, and 21 cycles of 100K temperature cycles. The driving voltage, current, emission spectra and optical power (V-I-P) operation characteristics exhibited no significant changes after the space environmental tests. The DUV LEDs will be used for photoelectric charge management in space flights. For custom designed AlGaN UV photodiodes with a central response wavelength of 255 nm, we have demonstrated

  8. Ab initio multiple cloning algorithm for quantum nonadiabatic molecular dynamics

    NASA Astrophysics Data System (ADS)

    Makhov, Dmitry V.; Glover, William J.; Martinez, Todd J.; Shalashilin, Dmitrii V.

    2014-08-01

    We present a new algorithm for ab initio quantum nonadiabatic molecular dynamics that combines the best features of ab initio Multiple Spawning (AIMS) and Multiconfigurational Ehrenfest (MCE) methods. In this new method, ab initio multiple cloning (AIMC), the individual trajectory basis functions (TBFs) follow Ehrenfest equations of motion (as in MCE). However, the basis set is expanded (as in AIMS) when these TBFs become sufficiently mixed, preventing prolonged evolution on an averaged potential energy surface. We refer to the expansion of the basis set as "cloning," in analogy to the "spawning" procedure in AIMS. This synthesis of AIMS and MCE allows us to leverage the benefits of mean-field evolution during periods of strong nonadiabatic coupling while simultaneously avoiding mean-field artifacts in Ehrenfest dynamics. We explore the use of time-displaced basis sets, "trains," as a means of expanding the basis set for little cost. We also introduce a new bra-ket averaged Taylor expansion (BAT) to approximate the necessary potential energy and nonadiabatic coupling matrix elements. The BAT approximation avoids the necessity of computing electronic structure information at intermediate points between TBFs, as is usually done in saddle-point approximations used in AIMS. The efficiency of AIMC is demonstrated on the nonradiative decay of the first excited state of ethylene. The AIMC method has been implemented within the AIMS-MOLPRO package, which was extended to include Ehrenfest basis functions.

  9. Ab initio multiple cloning algorithm for quantum nonadiabatic molecular dynamics.

    PubMed

    Makhov, Dmitry V; Glover, William J; Martinez, Todd J; Shalashilin, Dmitrii V

    2014-08-07

    We present a new algorithm for ab initio quantum nonadiabatic molecular dynamics that combines the best features of ab initio Multiple Spawning (AIMS) and Multiconfigurational Ehrenfest (MCE) methods. In this new method, ab initio multiple cloning (AIMC), the individual trajectory basis functions (TBFs) follow Ehrenfest equations of motion (as in MCE). However, the basis set is expanded (as in AIMS) when these TBFs become sufficiently mixed, preventing prolonged evolution on an averaged potential energy surface. We refer to the expansion of the basis set as "cloning," in analogy to the "spawning" procedure in AIMS. This synthesis of AIMS and MCE allows us to leverage the benefits of mean-field evolution during periods of strong nonadiabatic coupling while simultaneously avoiding mean-field artifacts in Ehrenfest dynamics. We explore the use of time-displaced basis sets, "trains," as a means of expanding the basis set for little cost. We also introduce a new bra-ket averaged Taylor expansion (BAT) to approximate the necessary potential energy and nonadiabatic coupling matrix elements. The BAT approximation avoids the necessity of computing electronic structure information at intermediate points between TBFs, as is usually done in saddle-point approximations used in AIMS. The efficiency of AIMC is demonstrated on the nonradiative decay of the first excited state of ethylene. The AIMC method has been implemented within the AIMS-MOLPRO package, which was extended to include Ehrenfest basis functions.

  10. Ab initio multiple cloning algorithm for quantum nonadiabatic molecular dynamics

    SciTech Connect

    Makhov, Dmitry V.; Shalashilin, Dmitrii V.; Glover, William J.; Martinez, Todd J.

    2014-08-07

    We present a new algorithm for ab initio quantum nonadiabatic molecular dynamics that combines the best features of ab initio Multiple Spawning (AIMS) and Multiconfigurational Ehrenfest (MCE) methods. In this new method, ab initio multiple cloning (AIMC), the individual trajectory basis functions (TBFs) follow Ehrenfest equations of motion (as in MCE). However, the basis set is expanded (as in AIMS) when these TBFs become sufficiently mixed, preventing prolonged evolution on an averaged potential energy surface. We refer to the expansion of the basis set as “cloning,” in analogy to the “spawning” procedure in AIMS. This synthesis of AIMS and MCE allows us to leverage the benefits of mean-field evolution during periods of strong nonadiabatic coupling while simultaneously avoiding mean-field artifacts in Ehrenfest dynamics. We explore the use of time-displaced basis sets, “trains,” as a means of expanding the basis set for little cost. We also introduce a new bra-ket averaged Taylor expansion (BAT) to approximate the necessary potential energy and nonadiabatic coupling matrix elements. The BAT approximation avoids the necessity of computing electronic structure information at intermediate points between TBFs, as is usually done in saddle-point approximations used in AIMS. The efficiency of AIMC is demonstrated on the nonradiative decay of the first excited state of ethylene. The AIMC method has been implemented within the AIMS-MOLPRO package, which was extended to include Ehrenfest basis functions.

  11. Irreducible Tensor Operators and Multiple-Quantum NMR.

    NASA Astrophysics Data System (ADS)

    Hutchison, Wayne Douglas

    The aim of the work detailed in this thesis, is to provide a concise, and illuminating, mathematical description of multiple quantum nuclear magnetic resonance (MQNMR) experiments, on essentially isolated (non-coupled) nuclei. The treatment used is based on irreducible tensor operators, which form an orthonormal basis set. Such operators can be used to detail the state of the nuclear ensemble (density matrix) during every stage, preparation, evolution and detection, of a MQNMR experiment. Moreover, such operators can be also used to provide a rigorous analysis of pulsed NMR experiments, on oriented nuclei at low temperatures, where the initial density matrix is far from trivial. The specific topics dealt with in this thesis are as follows. In the first place the properties of irreducible tensor operators are discussed in some detail. In particular, symmetric and anti-symmetric combinations of tensor operators are introduced, to reflect the Hermitian nature of the nuclear Hamiltonian and density matrix. Secondly, the creation of multipolar nuclear states using hard, non-selective rf pulses, is detailed for spin I = 1, 3/2, 2 and 5/2 nuclei, subject to an axially symmetric quadrupole interaction. Results are also given for general I. Thirdly, some experimental results, verifying the production of a triple quantum NMR state, for the I = 3/2 ^{23}Na nuclei in a single crystal of NaIO_4 are presented and discussed. Fourthly, the treatment of MQNMR experiments is extended to the low temperature regime where the initial density matrix includes Fano statistical tensors other than rank one. In particular, it is argued that MQNMR techniques could be used to enhance the anisotropy of gamma-ray emission from oriented nuclei at low temperatures. Fifthly, the effect of a more general quadrupole Hamiltonian (including an asymmetry term) on MQNMR experiments is considered for spins I = 1 and 3/2. In particular, it is shown that double quantum states evolve to give longitudinal NMR

  12. Experimental realization of entanglement in multiple degrees of freedom between two quantum memories.

    PubMed

    Zhang, Wei; Ding, Dong-Sheng; Dong, Ming-Xin; Shi, Shuai; Wang, Kai; Liu, Shi-Long; Li, Yan; Zhou, Zhi-Yuan; Shi, Bao-Sen; Guo, Guang-Can

    2016-11-14

    Entanglement in multiple degrees of freedom has many benefits over entanglement in a single one. The former enables quantum communication with higher channel capacity and more efficient quantum information processing and is compatible with diverse quantum networks. Establishing multi-degree-of-freedom entangled memories is not only vital for high-capacity quantum communication and computing, but also promising for enhanced violations of nonlocality in quantum systems. However, there have been yet no reports of the experimental realization of multi-degree-of-freedom entangled memories. Here we experimentally established hyper- and hybrid entanglement in multiple degrees of freedom, including path (K-vector) and orbital angular momentum, between two separated atomic ensembles by using quantum storage. The results are promising for achieving quantum communication and computing with many degrees of freedom.

  13. Experimental realization of entanglement in multiple degrees of freedom between two quantum memories

    PubMed Central

    Zhang, Wei; Ding, Dong-Sheng; Dong, Ming-Xin; Shi, Shuai; Wang, Kai; Liu, Shi-Long; Li, Yan; Zhou, Zhi-Yuan; Shi, Bao-Sen; Guo, Guang-Can

    2016-01-01

    Entanglement in multiple degrees of freedom has many benefits over entanglement in a single one. The former enables quantum communication with higher channel capacity and more efficient quantum information processing and is compatible with diverse quantum networks. Establishing multi-degree-of-freedom entangled memories is not only vital for high-capacity quantum communication and computing, but also promising for enhanced violations of nonlocality in quantum systems. However, there have been yet no reports of the experimental realization of multi-degree-of-freedom entangled memories. Here we experimentally established hyper- and hybrid entanglement in multiple degrees of freedom, including path (K-vector) and orbital angular momentum, between two separated atomic ensembles by using quantum storage. The results are promising for achieving quantum communication and computing with many degrees of freedom. PMID:27841274

  14. Multiple-quantum spin coherence in the ground state of alkali atomic vapors

    NASA Astrophysics Data System (ADS)

    Xu, J. D.; Wäautckerle, G.; Mehring, M.

    1997-01-01

    Two-dimensional (2D) multiple-quantum coherence is reported for the hyperfine ground state of rubidium and cesium atoms by applying multiple radio-frequency pulses to the optically polarized atoms. Calculations of 1D and 2D multiple quantum coherences were performed with a general theory for an arbitrary high spin system by using irreducible tensor operators. The experimental results compare very well with the calculations.

  15. Hot carrier cooling mechanisms in multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Conibeer, Gavin; Zhang, Yi; Bremner, Stephen; Shrestha, Santosh

    2017-02-01

    The Hot Carrier solar cell has the potential to yield a very high efficiency, well over 50% under 1 sun. Multiple quantum wells have been shown to have significantly slow hot carrier cooling rates than bulk material and are thus a promising candidate for hot carrier solar cell absorbers. However, the mechanism(s) by which hot carrier cooling is restricted is not clear. In this paper is presented a systematic study of carrier cooling rates in GaAs/AlAs MQW with either varying barrier or varying well thickness. These allow an investigation as to whether the mechanisms of either a reduction in hot carrier diffusion; a localisation of phonons emitted by hot carriers; or mini-gaps in the MQW phonon dispersion are primarily responsible for reduced carrier cooling rates. With the conclusion that the interfaces between QW and barrier are primarily responsible for reducing carrier cooling rates through a mechanism of phonon confinement leading to phonon bottleneck restriction of phonon decay and hence re-heating of hot carriers. Some aspects of the consequent affect on the use of MQW as absorbers in a real hot carrier cell are discussed.

  16. Near-infrared hybrid plasmonic multiple quantum well nanowire lasers.

    PubMed

    Wang, Jiamin; Wei, Wei; Yan, Xin; Zhang, Jinnan; Zhang, Xia; Ren, Xiaomin

    2017-04-17

    The lasing characteristics of hybrid plasmonic AlGaAs/GaAs multiple quantum well (MQW) nanowire (NW) lasers beyond diffraction limit have been investigated by 3D finite-difference time-domain simulations. The results show that the hybrid plasmonic MQW NW has lower threshold gain over a broad diameter range in comparison with its photonic counterpart. Beyond the diffraction limit, the hybrid plasmonic MQW NW has a lowest threshold gain of 788 cm-1 at a diameter of 130 nm, and a cutoff diameter of 80 nm, half that of the photonic lasers. In comparison with the hybrid plasmonic core-shell NWs, the hybrid plasmonic MQW NWs exhibit significantly lower threshold gain, higher Purcell factor, and smaller cutoff diameter, which are attributed to the superior overlap between the hybrid plasmonic modes and gain medium, as well as a stronger optical confinement due to the grating-like effect of MQW structures. Moreover, the hybrid plasmonic MQW NW has a lower threshold gain than that of the core-shell NW over a broad wavelength range. The hybrid plasmonic MQW NW structure is promising for ultrasmall and low-consumption near-infrared nanolasers.

  17. Single-photon quantum router with multiple output ports

    PubMed Central

    Yan, Wei-Bin; Fan, Heng

    2014-01-01

    The routing capability is a requisite in quantum network. Although the quantum routing of signals has been investigated in various systems both in theory and experiment, the general form of quantum routing with many output terminals still needs to be explored. Here we propose a scheme to achieve the multi-channel quantum routing of the single photons in a waveguide-emitter system. The channels are composed by the waveguides and are connected by intermediate two-level emitters. By adjusting the intermediate emitters, the output channels of the input single photons can be controlled. This is demonstrated in the cases of one output channel, two output channels and the generic N output channels. The results show that the multi-channel quantum routing of single photons can be well achieved in the proposed system. This offers a scheme for the experimental realization of general quantum routing of single photons. PMID:24769619

  18. Single-photon quantum router with multiple output ports.

    PubMed

    Yan, Wei-Bin; Fan, Heng

    2014-04-28

    The routing capability is a requisite in quantum network. Although the quantum routing of signals has been investigated in various systems both in theory and experiment, the general form of quantum routing with many output terminals still needs to be explored. Here we propose a scheme to achieve the multi-channel quantum routing of the single photons in a waveguide-emitter system. The channels are composed by the waveguides and are connected by intermediate two-level emitters. By adjusting the intermediate emitters, the output channels of the input single photons can be controlled. This is demonstrated in the cases of one output channel, two output channels and the generic N output channels. The results show that the multi-channel quantum routing of single photons can be well achieved in the proposed system. This offers a scheme for the experimental realization of general quantum routing of single photons.

  19. Multiple energy scales at a quantum critical point.

    PubMed

    Gegenwart, P; Westerkamp, T; Krellner, C; Tokiwa, Y; Paschen, S; Geibel, C; Steglich, F; Abrahams, E; Si, Q

    2007-02-16

    We report thermodynamic measurements in a magnetic-field-driven quantum critical point of a heavy fermion metal, YbRh2Si2. The data provide evidence for an energy scale in the equilibrium excitation spectrum that is in addition to the one expected from the slow fluctuations of the order parameter. Both energy scales approach zero as the quantum critical point is reached, thereby providing evidence for a new class of quantum criticality.

  20. Storage of multiple single-photon pulses emitted from a quantum dot in a solid-state quantum memory

    PubMed Central

    Tang, Jian-Shun; Zhou, Zong-Quan; Wang, Yi-Tao; Li, Yu-Long; Liu, Xiao; Hua, Yi-Lin; Zou, Yang; Wang, Shuang; He, De-Yong; Chen, Geng; Sun, Yong-Nan; Yu, Ying; Li, Mi-Feng; Zha, Guo-Wei; Ni, Hai-Qiao; Niu, Zhi-Chuan; Li, Chuan-Feng; Guo, Guang-Can

    2015-01-01

    Quantum repeaters are critical components for distributing entanglement over long distances in presence of unavoidable optical losses during transmission. Stimulated by the Duan–Lukin–Cirac–Zoller protocol, many improved quantum repeater protocols based on quantum memories have been proposed, which commonly focus on the entanglement-distribution rate. Among these protocols, the elimination of multiple photons (or multiple photon-pairs) and the use of multimode quantum memory are demonstrated to have the ability to greatly improve the entanglement-distribution rate. Here, we demonstrate the storage of deterministic single photons emitted from a quantum dot in a polarization-maintaining solid-state quantum memory; in addition, multi-temporal-mode memory with 1, 20 and 100 narrow single-photon pulses is also demonstrated. Multi-photons are eliminated, and only one photon at most is contained in each pulse. Moreover, the solid-state properties of both sub-systems make this configuration more stable and easier to be scalable. Our work will be helpful in the construction of efficient quantum repeaters based on all-solid-state devices. PMID:26468996

  1. Storage of multiple single-photon pulses emitted from a quantum dot in a solid-state quantum memory.

    PubMed

    Tang, Jian-Shun; Zhou, Zong-Quan; Wang, Yi-Tao; Li, Yu-Long; Liu, Xiao; Hua, Yi-Lin; Zou, Yang; Wang, Shuang; He, De-Yong; Chen, Geng; Sun, Yong-Nan; Yu, Ying; Li, Mi-Feng; Zha, Guo-Wei; Ni, Hai-Qiao; Niu, Zhi-Chuan; Li, Chuan-Feng; Guo, Guang-Can

    2015-10-15

    Quantum repeaters are critical components for distributing entanglement over long distances in presence of unavoidable optical losses during transmission. Stimulated by the Duan-Lukin-Cirac-Zoller protocol, many improved quantum repeater protocols based on quantum memories have been proposed, which commonly focus on the entanglement-distribution rate. Among these protocols, the elimination of multiple photons (or multiple photon-pairs) and the use of multimode quantum memory are demonstrated to have the ability to greatly improve the entanglement-distribution rate. Here, we demonstrate the storage of deterministic single photons emitted from a quantum dot in a polarization-maintaining solid-state quantum memory; in addition, multi-temporal-mode memory with 1, 20 and 100 narrow single-photon pulses is also demonstrated. Multi-photons are eliminated, and only one photon at most is contained in each pulse. Moreover, the solid-state properties of both sub-systems make this configuration more stable and easier to be scalable. Our work will be helpful in the construction of efficient quantum repeaters based on all-solid-state devices.

  2. Experimental investigation of quantum entropic uncertainty relations for multiple measurements in pure diamond.

    PubMed

    Xing, Jian; Zhang, Yu-Ran; Liu, Shang; Chang, Yan-Chun; Yue, Jie-Dong; Fan, Heng; Pan, Xin-Yu

    2017-05-31

    One unique feature of quantum mechanics is the Heisenberg uncertainty principle, which states that the outcomes of two incompatible measurements cannot simultaneously achieve arbitrary precision. In an information-theoretic context of quantum information, the uncertainty principle can be formulated as entropic uncertainty relations with two measurements for a quantum bit (qubit) in two-dimensional system. New entropic uncertainty relations are studied for a higher-dimensional quantum state with multiple measurements, and the uncertainty bounds can be tighter than that expected from two measurements settings and cannot result from qubits system with or without a quantum memory. Here we report the first room-temperature experimental testing of the entropic uncertainty relations with three measurements in a natural three-dimensional solid-state system: the nitrogen-vacancy center in pure diamond. The experimental results confirm the entropic uncertainty relations for multiple measurements. Our result represents a more precise demonstrating of the fundamental uncertainty principle of quantum mechanics.

  3. An AlGaN Core-Shell Tunnel Junction Nanowire Light-Emitting Diode Operating in the Ultraviolet-C Band.

    PubMed

    Sadaf, S M; Zhao, S; Wu, Y; Ra, Y-H; Liu, X; Vanka, S; Mi, Z

    2017-02-08

    To date, semiconductor light emitting diodes (LEDs) operating in the deep ultraviolet (UV) spectral range exhibit very low efficiency due to the presence of large densities of defects and extremely inefficient p-type conduction of conventional AlGaN quantum well heterostructures. We have demonstrated that such critical issues can be potentially addressed by using nearly defect-free AlGaN tunnel junction core-shell nanowire heterostructures. The core-shell nanowire arrays exhibit high photoluminescence efficiency (∼80%) in the UV-C band at room temperature. With the incorporation of an epitaxial Al tunnel junction, the p-(Al)GaN contact-free nanowire deep UV LEDs showed nearly one order of magnitude reduction in the device resistance, compared to the conventional nanowire p-i-n device. The unpackaged Al tunnel junction deep UV LEDs exhibit an output power >8 mW and a peak external quantum efficiency ∼0.4%, which are nearly one to two orders of magnitude higher than previously reported AlGaN nanowire devices. Detailed studies further suggest that the maximum achievable efficiency is limited by electron overflow and poor light extraction efficiency due to the TM polarized emission.

  4. Sub-milliwatt AlGaN nanowire tunnel junction deep ultraviolet light emitting diodes on silicon operating at 242 nm

    NASA Astrophysics Data System (ADS)

    Zhao, S.; Sadaf, S. M.; Vanka, S.; Wang, Y.; Rashid, R.; Mi, Z.

    2016-11-01

    We report AlGaN nanowire light emitting diodes (LEDs) operating in the ultraviolet-C band. The LED structures are grown by molecular beam epitaxy on Si substrate. It is found that with the use of the n+-GaN/Al/p+-AlGaN tunnel junction (TJ), the device resistance is reduced by one order of magnitude, and the light output power is increased by two orders of magnitude, compared to AlGaN nanowire LEDs without TJ. For unpackaged TJ ultraviolet LEDs emitting at 242 nm, a maximum output power of 0.37 mW is measured, with a peak external quantum efficiency up to 0.012%.

  5. Optimized multiple quantum MAS lineshape simulations in solid state NMR

    NASA Astrophysics Data System (ADS)

    Brouwer, William J.; Davis, Michael C.; Mueller, Karl T.

    2009-10-01

    The majority of nuclei available for study in solid state Nuclear Magnetic Resonance have half-integer spin I>1/2, with corresponding electric quadrupole moment. As such, they may couple with a surrounding electric field gradient. This effect introduces anisotropic line broadening to spectra, arising from distinct chemical species within polycrystalline solids. In Multiple Quantum Magic Angle Spinning (MQMAS) experiments, a second frequency dimension is created, devoid of quadrupolar anisotropy. As a result, the center of gravity of peaks in the high resolution dimension is a function of isotropic second order quadrupole and chemical shift alone. However, for complex materials, these parameters take on a stochastic nature due in turn to structural and chemical disorder. Lineshapes may still overlap in the isotropic dimension, complicating the task of assignment and interpretation. A distributed computational approach is presented here which permits simulation of the two-dimensional MQMAS spectrum, generated by random variates from model distributions of isotropic chemical and quadrupole shifts. Owing to the non-convex nature of the residual sum of squares (RSS) function between experimental and simulated spectra, simulated annealing is used to optimize the simulation parameters. In this manner, local chemical environments for disordered materials may be characterized, and via a re-sampling approach, error estimates for parameters produced. Program summaryProgram title: mqmasOPT Catalogue identifier: AEEC_v1_0 Program summary URL:http://cpc.cs.qub.ac.uk/summaries/AEEC_v1_0.html Program obtainable from: CPC Program Library, Queen's University, Belfast, N. Ireland Licensing provisions: Standard CPC licence, http://cpc.cs.qub.ac.uk/licence/licence.html No. of lines in distributed program, including test data, etc.: 3650 No. of bytes in distributed program, including test data, etc.: 73 853 Distribution format: tar.gz Programming language: C, OCTAVE Computer: UNIX

  6. Multiple Quantum Well-Based Modulating Retroreflectors for Inter- and Intra-Spacecraft Communications

    DTIC Science & Technology

    2006-01-01

    Multiple quantum well-based modulating retroreflectors for inter- and intra-spacecraft communication Peter G. Goetz, William S. Rabinovich, G...is presented. Keywords: Free-space optics, modulating retroreflector , multiple quantum well, radiation tolerance, FSO, MQW, MRR 1. INTRODUCTION...RETRO-REFLECTORS (MRRS) A MRR couples a passive optical retroreflector such as a corner-cube or a cat’s eye retroreflector with an electro-optic

  7. A quantum-inspired genetic algorithm based on probabilistic coding for multiple sequence alignment.

    PubMed

    Huo, Hong-Wei; Stojkovic, Vojislav; Xie, Qiao-Luan

    2010-02-01

    Quantum parallelism arises from the ability of a quantum memory register to exist in a superposition of base states. Since the number of possible base states is 2(n), where n is the number of qubits in the quantum memory register, one operation on a quantum computer performs what an exponential number of operations on a classical computer performs. The power of quantum algorithms comes from taking advantages of quantum parallelism. Quantum algorithms are exponentially faster than classical algorithms. Genetic optimization algorithms are stochastic search algorithms which are used to search large, nonlinear spaces where expert knowledge is lacking or difficult to encode. QGMALIGN--a probabilistic coding based quantum-inspired genetic algorithm for multiple sequence alignment is presented. A quantum rotation gate as a mutation operator is used to guide the quantum state evolution. Six genetic operators are designed on the coding basis to improve the solution during the evolutionary process. The experimental results show that QGMALIGN can compete with the popular methods, such as CLUSTALX and SAGA, and performs well on the presenting biological data. Moreover, the addition of genetic operators to the quantum-inspired algorithm lowers the cost of overall running time.

  8. Comparative research on the influence of varied Al component on the active layer of AlGaN photocathode

    NASA Astrophysics Data System (ADS)

    He, Minyou; Chen, Liang; Su, Lingai; Yin, Lin; Qian, Yunsheng

    2017-06-01

    To theoretically research the influence of a varied Al component on the active layer of AlGaN photocathodes, the first principle based on density functional theory is used to calculate the formation energy and band structure of Al x Ga1-x N with x at 0, 0.125, 0.25, 0.325, and 0.5. The calculation results show that the formation energy declines along with the Al component rise, while the band gap is increasing with Al component increasing. Al x Ga1-x N with x at 0, 0.125, 0.25, 0.325, and 0.5 are direct band gap semiconductors, and their absorption coefficient curves have the same variation tendency. For further study, we designed two kinds of reflection-mode AlGaN photocathode samples. Sample 1 has an Al x Ga1-x N active layer with varied Al component ranging from 0.5 to 0 and decreasing from the bulk to the surface, while sample 2 has an Al x Ga1-x N active layer with the fixed Al component of 0.25. Using the multi-information measurement system, we measured the spectral response of the activated samples at room temperature. Their photocathode parameters were obtained by fitting quantum efficiency curves. Results show that sample 1 has a better spectral response than sample 2 at the range of short-wavelength. This work provides a reference for the structure design of the AlGaN photocathode. Project supported by the National Natural Science Foundation of China (Nos. 61308089, 6144005) and the Public Technology Applied Research Project of Zhejiang Province (No. 2013C31068).

  9. Multiple surface plasmons in an unbounded quantum plasma half-space

    SciTech Connect

    Palade, D. I.

    2016-07-15

    The propagation of surface plasmons on a quantum plasma half-space in the absence of any external confinement is investigated. By means of the Quantum Hydrodynamic Model in the electrostatic limit, it is found that the equilibrium density profile is a smooth continuous function which, in the linear regime, supports multiple non-normal surface modes. Defining a spectrum function and using a cutting condition, the dispersion relations of these modes and their relevance for realistic dynamics are computed. It is found that the multiple surface plasmons present a significant red-shift with respect to the case of fully bounded quantum plasmas.

  10. Enhanced carrier injection in InGaN/GaN multiple quantum wells LED with polarization-induced electron blocking barrier

    NASA Astrophysics Data System (ADS)

    Li, Chengguo; Liu, Hongfei; Chua, Soo Jin

    2016-03-01

    In this report, we designed a light emitting diode (LED) structure in which an N-polar p-GaN layer is grown on top of Ga-polar In0.1Ga0.9N/GaN quantum wells (QWs) on an n-GaN layer. Numerical simulation reveals that the large polarization field at the polarity inversion interface induces a potential barrier in the conduction band, which can block electron overflow out of the QWs. Compared with a conventional LED structure with an Al0.2Ga0.8N electron blocking layer (EBL), the proposed LED structure shows much lower electron current leakage, higher hole injection, and a significant improvement in the internal quantum efficiency (IQE). These results suggest that the polarization induced barrier (PIB) is more effective than the AlGaN EBL in suppressing electron overflow and improving hole transport in GaN-based LEDs.

  11. Multiple-exciton generation in lead selenide nanorod solar cells with external quantum efficiencies exceeding 120%

    PubMed Central

    Davis, Nathaniel J. L. K.; Böhm, Marcus L.; Tabachnyk, Maxim; Wisnivesky-Rocca-Rivarola, Florencia; Jellicoe, Tom C.; Ducati, Caterina; Ehrler, Bruno; Greenham, Neil C.

    2015-01-01

    Multiple-exciton generation—a process in which multiple charge-carrier pairs are generated from a single optical excitation—is a promising way to improve the photocurrent in photovoltaic devices and offers the potential to break the Shockley–Queisser limit. One-dimensional nanostructures, for example nanorods, have been shown spectroscopically to display increased multiple exciton generation efficiencies compared with their zero-dimensional analogues. Here we present solar cells fabricated from PbSe nanorods of three different bandgaps. All three devices showed external quantum efficiencies exceeding 100% and we report a maximum external quantum efficiency of 122% for cells consisting of the smallest bandgap nanorods. We estimate internal quantum efficiencies to exceed 150% at relatively low energies compared with other multiple exciton generation systems, and this demonstrates the potential for substantial improvements in device performance due to multiple exciton generation. PMID:26411283

  12. Multiple-exciton generation in lead selenide nanorod solar cells with external quantum efficiencies exceeding 120.

    PubMed

    Davis, Nathaniel J L K; Böhm, Marcus L; Tabachnyk, Maxim; Wisnivesky-Rocca-Rivarola, Florencia; Jellicoe, Tom C; Ducati, Caterina; Ehrler, Bruno; Greenham, Neil C

    2015-09-28

    Multiple-exciton generation-a process in which multiple charge-carrier pairs are generated from a single optical excitation-is a promising way to improve the photocurrent in photovoltaic devices and offers the potential to break the Shockley-Queisser limit. One-dimensional nanostructures, for example nanorods, have been shown spectroscopically to display increased multiple exciton generation efficiencies compared with their zero-dimensional analogues. Here we present solar cells fabricated from PbSe nanorods of three different bandgaps. All three devices showed external quantum efficiencies exceeding 100% and we report a maximum external quantum efficiency of 122% for cells consisting of the smallest bandgap nanorods. We estimate internal quantum efficiencies to exceed 150% at relatively low energies compared with other multiple exciton generation systems, and this demonstrates the potential for substantial improvements in device performance due to multiple exciton generation.

  13. Measuring out-of-time-order correlations and multiple quantum spectra in a trapped-ion quantum magnet

    NASA Astrophysics Data System (ADS)

    Gärttner, Martin; Bohnet, Justin G.; Safavi-Naini, Arghavan; Wall, Michael L.; Bollinger, John J.; Rey, Ana Maria

    2017-08-01

    Controllable arrays of ions and ultracold atoms can simulate complex many-body phenomena and may provide insights into unsolved problems in modern science. To this end, experimentally feasible protocols for quantifying the buildup of quantum correlations and coherence are needed, as performing full state tomography does not scale favourably with the number of particles. Here we develop and experimentally demonstrate such a protocol, which uses time reversal of the many-body dynamics to measure out-of-time-order correlation functions (OTOCs) in a long-range Ising spin quantum simulator with more than 100 ions in a Penning trap. By measuring a family of OTOCs as a function of a tunable parameter we obtain fine-grained information about the state of the system encoded in the multiple quantum coherence spectrum, extract the quantum state purity, and demonstrate the buildup of up to 8-body correlations. Future applications of this protocol could enable studies of many-body localization, quantum phase transitions, and tests of the holographic duality between quantum and gravitational systems.

  14. Quantum teleportation of multiple degrees of freedom of a single photon.

    PubMed

    Wang, Xi-Lin; Cai, Xin-Dong; Su, Zu-En; Chen, Ming-Cheng; Wu, Dian; Li, Li; Liu, Nai-Le; Lu, Chao-Yang; Pan, Jian-Wei

    2015-02-26

    Quantum teleportation provides a 'disembodied' way to transfer quantum states from one object to another at a distant location, assisted by previously shared entangled states and a classical communication channel. As well as being of fundamental interest, teleportation has been recognized as an important element in long-distance quantum communication, distributed quantum networks and measurement-based quantum computation. There have been numerous demonstrations of teleportation in different physical systems such as photons, atoms, ions, electrons and superconducting circuits. All the previous experiments were limited to the teleportation of one degree of freedom only. However, a single quantum particle can naturally possess various degrees of freedom--internal and external--and with coherent coupling among them. A fundamental open challenge is to teleport multiple degrees of freedom simultaneously, which is necessary to describe a quantum particle fully and, therefore, to teleport it intact. Here we demonstrate quantum teleportation of the composite quantum states of a single photon encoded in both spin and orbital angular momentum. We use photon pairs entangled in both degrees of freedom (that is, hyper-entangled) as the quantum channel for teleportation, and develop a method to project and discriminate hyper-entangled Bell states by exploiting probabilistic quantum non-demolition measurement, which can be extended to more degrees of freedom. We verify the teleportation for both spin-orbit product states and hybrid entangled states, and achieve a teleportation fidelity ranging from 0.57 to 0.68, above the classical limit. Our work is a step towards the teleportation of more complex quantum systems, and demonstrates an increase in our technical control of scalable quantum technologies.

  15. Quantum teleportation of multiple degrees of freedom of a single photon

    NASA Astrophysics Data System (ADS)

    Wang, Xi-Lin; Cai, Xin-Dong; Su, Zu-En; Chen, Ming-Cheng; Wu, Dian; Li, Li; Liu, Nai-Le; Lu, Chao-Yang; Pan, Jian-Wei

    2015-02-01

    Quantum teleportation provides a `disembodied' way to transfer quantum states from one object to another at a distant location, assisted by previously shared entangled states and a classical communication channel. As well as being of fundamental interest, teleportation has been recognized as an important element in long-distance quantum communication, distributed quantum networks and measurement-based quantum computation. There have been numerous demonstrations of teleportation in different physical systems such as photons, atoms, ions, electrons and superconducting circuits. All the previous experiments were limited to the teleportation of one degree of freedom only. However, a single quantum particle can naturally possess various degrees of freedom--internal and external--and with coherent coupling among them. A fundamental open challenge is to teleport multiple degrees of freedom simultaneously, which is necessary to describe a quantum particle fully and, therefore, to teleport it intact. Here we demonstrate quantum teleportation of the composite quantum states of a single photon encoded in both spin and orbital angular momentum. We use photon pairs entangled in both degrees of freedom (that is, hyper-entangled) as the quantum channel for teleportation, and develop a method to project and discriminate hyper-entangled Bell states by exploiting probabilistic quantum non-demolition measurement, which can be extended to more degrees of freedom. We verify the teleportation for both spin-orbit product states and hybrid entangled states, and achieve a teleportation fidelity ranging from 0.57 to 0.68, above the classical limit. Our work is a step towards the teleportation of more complex quantum systems, and demonstrates an increase in our technical control of scalable quantum technologies.

  16. Low temperature laser molecular beam epitaxy and characterization of AlGaN epitaxial layers

    NASA Astrophysics Data System (ADS)

    Tyagi, Prashant; Ch., Ramesh; Kushvaha, S. S.; Kumar, M. Senthil

    2017-05-01

    We have grown AlGaN (0001) epitaxial layers on sapphire (0001) by using laser molecular beam epitaxy (LMBE) technique. The growth was carried out using laser ablation of AlxGa1-x liquid metal alloy under r.f. nitrogen plasma ambient. Before epilayer growth, the sapphire nitradation was performed at 700 °C using r.f nitrogen plasma followed by AlGaN layer growth. The in-situ reflection high energy electron diffraction (RHEED) was employed to monitor the substrate nitridation and AlGaN epitaxial growth. High resolution x-ray diffraction showed wurtzite hexagonal growth of AlGaN layer along c-axis. An absorption bandgap of 3.97 eV is obtained for the grown AlGaN layer indicating an Al composition of more than 20 %. Using ellipsometry, a refractive index (n) value of about 2.19 is obtained in the visible region.

  17. Elimination of AlGaN epilayer cracking by spatially patterned AlN mask

    NASA Astrophysics Data System (ADS)

    Sarzyński, Marcin; Kryśko, Marcin; Targowski, Grzegorz; Czernecki, Robert; Sarzyńska, Agnieszka; Libura, Adam; Krupczyński, Wiktor; Perlin, Piotr; Leszczyński, Michał

    2006-03-01

    The inherent problem in III-nitride technology is the cracking of AlGaN layers that results from lattice mismatch between AlGaN and GaN. In case of thin substrates (30-90μm), such as, bulk GaN grown by the high-pressure/high-temperature method, the bowing of AlGaN /GaN strained structures becomes an additional problem. To eliminate cracking and bowing, AlGaN layers were grown on GaN substrates with an AlN mask patterned to form 3-15μm wide windows. In the 3μm window, the AlGaN layer was not cracked, although its thickness and Al composition exceeded critical values for growth on nonpatterned substrates. Dislocation density in the windows was of 5×106/cm2.

  18. Exciton multiplication and relaxation dynamics in quantum dots: applications to ultrahigh-efficiency solar photon conversion.

    PubMed

    Nozik, A J

    2005-10-03

    Huge amounts of carbon-free energy will be required during the coming decades in order to stabilize atmospheric CO2 to acceptable levels. Solar energy is the largest source of non-carbonaceous energy and can be used to produce both electricity and fuel. However, the ratio of the areal cost to the conversion efficiency for devices converting solar photons to electricity or fuel must be reduced by at least 1 order of magnitude from the present values; this requires large increases in the cell efficiency and large reductions in the cost per unit area. We have shown how semiconductor quantum dots may greatly increase photon conversion efficiencies by producing multiple excitons from a single photon. This is possible because quantization of energy levels in quantum dots slows the cooling of hot excitons, promotes multiple exciton generation, and lowers the photon energy threshold for this process. Quantum yields of 300% for exciton formation in PbSe quantum dots have been reported at photon energies 3.8 times the HOMO-LUMO transition energy, indicating the formation of three excitons/photon for all photoexcited quantum dots. Similar high quantum yields have also been reported for PbS quantum dots. A new model for this effect that is based on a coherent superposition of multiple excitonic states has been proposed.

  19. Exact non-Markovian master equations for multiple qubit systems: Quantum-trajectory approach

    NASA Astrophysics Data System (ADS)

    Chen, Yusui; You, J. Q.; Yu, Ting

    2014-11-01

    A wide class of exact master equations for a multiple qubit system can be explicitly constructed by using the corresponding exact non-Markovian quantum-state diffusion equations. These exact master equations arise naturally from the quantum decoherence dynamics of qubit system as a quantum memory coupled to a collective colored noisy source. The exact master equations are also important in optimal quantum control, quantum dissipation, and quantum thermodynamics. In this paper, we show that the exact non-Markovian master equation for a dissipative N -qubit system can be derived explicitly from the statistical average of the corresponding non-Markovian quantum trajectories. We illustrated our general formulation by an explicit construction of a three-qubit system coupled to a non-Markovian bosonic environment. This multiple qubit master equation offers an accurate time evolution of quantum systems in various domains, and paves the way to investigate the memory effect of an open system in a non-Markovian regime without any approximation.

  20. Carrier multiplication detected through transient photocurrent in device-grade films of lead selenide quantum dots

    SciTech Connect

    Gao, Jianbo; Fidler, Andrew F.; Klimov, Victor I.

    2015-09-08

    In carrier multiplication, the absorption of a single photon results in two or more electron–hole pairs. Quantum dots are promising materials for implementing carrier multiplication principles in real-life technologies. So far, however, most of research in this area has focused on optical studies of solution samples with yet to be proven relevance to practical devices. We report ultra-fast electro-optical studies of device-grade films of electronically coupled quantum dots that allow us to observe multiplication directly in the photocurrent. Our studies help rationalize previous results from both optical spectroscopy and steady-state photocurrent measurements and also provide new insights into effects of electric field and ligand treatments on multiexciton yields. Importantly, we demonstrate that using appropriate chemical treatments of the films, extra charges produced by carrier multiplication can be extracted from the quantum dots before they are lost to Auger recombination and hence can contribute to photocurrent of practical devices.

  1. Carrier multiplication detected through transient photocurrent in device-grade films of lead selenide quantum dots

    PubMed Central

    Gao, Jianbo; Fidler, Andrew F.; Klimov, Victor I.

    2015-01-01

    In carrier multiplication, the absorption of a single photon results in two or more electron–hole pairs. Quantum dots are promising materials for implementing carrier multiplication principles in real-life technologies. So far, however, most of research in this area has focused on optical studies of solution samples with yet to be proven relevance to practical devices. Here we report ultrafast electro-optical studies of device-grade films of electronically coupled quantum dots that allow us to observe multiplication directly in the photocurrent. Our studies help rationalize previous results from both optical spectroscopy and steady-state photocurrent measurements and also provide new insights into effects of electric field and ligand treatments on multiexciton yields. Importantly, we demonstrate that using appropriate chemical treatments of the films, extra charges produced by carrier multiplication can be extracted from the quantum dots before they are lost to Auger recombination and hence can contribute to photocurrent of practical devices. PMID:26345390

  2. Nonadditivity of quantum and classical capacities for entanglement breaking multiple-access channels and the butterfly network

    SciTech Connect

    Grudka, Andrzej; Horodecki, Pawel

    2010-06-15

    We analyze quantum network primitives which are entanglement breaking. We show superadditivity of quantum and classical capacity regions for quantum multiple-access channels and the quantum butterfly network. Since the effects are especially visible at high noise they suggest that quantum information effects may be particularly helpful in the case of the networks with occasional high noise rates. The present effects provide a qualitative borderline between superadditivities of bipartite and multipartite systems.

  3. Far-infrared intersubband photodetectors based on double-step III-nitride quantum wells

    NASA Astrophysics Data System (ADS)

    Sudradjat, Faisal F.; Zhang, Wei; Woodward, Jeffrey; Durmaz, Habibe; Moustakas, Theodore D.; Paiella, Roberto

    2012-06-01

    Far-infrared photoconductive detectors based on intersubband transitions in III-nitride semiconductor quantum wells are demonstrated. The device active material is based on a double-step quantum-well design, where two different (Al)GaN compositions are used both in the wells and in the barriers. With this approach, one can create a virtually flat multiple-quantum-well potential energy profile, where the deleterious effects of the intrinsic spontaneous and piezoelectric fields of nitride heterostructures are almost completely eliminated. Photocurrent spectra centered at a wavelength of 23 μm (13 THz frequency) are resolved up to 50 K, with responsivity of approximately 7 mA/W.

  4. Physically feasible three-level transitionless quantum driving with multiple Schrödinger dynamics

    NASA Astrophysics Data System (ADS)

    Song, Xue-Ke; Ai, Qing; Qiu, Jing; Deng, Fu-Guo

    2016-05-01

    Three-level quantum systems, which possess some unique characteristics beyond two-level ones, such as electromagnetically induced transparency, coherent trapping, and Raman scatting, play important roles in solid-state quantum information processing. Here, we introduce an approach to implement the physically feasible three-level transitionless quantum driving with multiple Schrödinger dynamics (MSDs). It can be used to control accurately population transfer and entanglement generation for three-level quantum systems in a nonadiabatic way. Moreover, we propose an experimentally realizable hybrid architecture, based on two nitrogen-vacancy-center ensembles coupled to a transmission line resonator, to realize our transitionless scheme which requires fewer physical resources and simple procedures, and it is more robust against environmental noises and control parameter variations than conventional adiabatic passage techniques. All these features inspire the further application of MSDs on robust quantum information processing in experiment.

  5. High Efficiency Quantum Dot Solar Cells Based on Multiple Exciton Generation

    SciTech Connect

    Breeze, Alison

    2011-04-15

    The objective of this project was to demonstrate that efficient multiple exciton generation observed in quantum dot materials could be harvested in nanostructured solar cells to dramatically improve the maximum power efficiency obtainable in photovoltaic modules. This proposal aimed to develop a high efficiency solar cell through a combination of quantum dot materials, nanostructured surfaces and atomic layer deposition for fabricating conformal and ultrathin films.

  6. Band-edge absorption coefficients from photoluminescence in semiconductor multiple quantum wells

    NASA Technical Reports Server (NTRS)

    Kost, Alan; Zou, Yao; Dapkus, P. D.; Garmire, Elsa; Lee, H. C.

    1989-01-01

    A novel approach to determining absorption coefficients in thin films using luminescence is described. The technique avoids many of the difficulties typically encountered in measurements of thin samples, Fabry-Perot effects, for example, and can be applied to a variety of materials. The absorption edge for GaAs/AlGaAs multiple quantum well structures, with quantum well widths ranging from 54 to 193 A is examined. Urbach (1953) parameters and excitonic linewidths are tabulated.

  7. Photoconductivity of InGaN/GaN multiple quantum well heterostructures

    NASA Astrophysics Data System (ADS)

    Baranovskiy, M. V.; Glinskii, G. F.

    2013-08-01

    Photocurrent and photoconductivity of InGaN/GaN multiple quantum well heterostructures as a function of applied reverse bias is investigated. Optical excitation was carried out in blue and violet regions of the spectrum, and temperature was ranging from 10 to 300 K. We observed characteristic features related to consequently moving space charge boundary through the quantum wells. For each quantum well there is a range of reverse bias with negative differential conductivity when excited by blue light. Frequency and temperature measurements revealed the presence of at least two different mechanisms that determine the photoconductivity of the structures.

  8. Decoherence of multiple quantum coherences generated from a dipolar ordered state

    NASA Astrophysics Data System (ADS)

    González, C. E.; Segnorile, H. H.; Zamar, R. C.

    2011-01-01

    Starting from the hypothesis that the decay of coherent signals observed in H1 NMR experiments is driven by quantum interference, irreversible decoherence, and nonidealities in the experiment, we design an experiment to isolate and identify the irreversible attenuation of multiple-quantum coherences toward quasiequilibrium states of dipolar order in nematic liquid crystals (LCs). The experiment combines the well-known “magic sandwich” pulse sequence with preparation of dipolar ordered states and encoding of multiple-quantum coherences. The spin system composed of the dipole-coupled protons of a LC molecule provides an example of a small cluster of strongly interacting spins. We study decoherence rates under a sequence that reverses time evolution with the secular dipolar Hamiltonian to compensate coherent evolution of a closed quantum system. In this way, the time scale is made evident where irreversible decoherence takes place, providing insight into the nature of the processes responsible for the attainment of quasiequilibrium. The behavior of single- and double-quantum-coherence amplitudes with reversal time is interpreted as evidence of the quantum character (as opposed to stochastic character) of the processes that drive irreversible decoherence. The experimental method proposed is useful for probing the action of the environment on materials with quantum information processing potential.

  9. A probabilistic coding based quantum genetic algorithm for multiple sequence alignment.

    PubMed

    Huo, Hongwei; Xie, Qiaoluan; Shen, Xubang; Stojkovic, Vojislav

    2008-01-01

    This paper presents an original Quantum Genetic algorithm for Multiple sequence ALIGNment (QGMALIGN) that combines a genetic algorithm and a quantum algorithm. A quantum probabilistic coding is designed for representing the multiple sequence alignment. A quantum rotation gate as a mutation operator is used to guide the quantum state evolution. Six genetic operators are designed on the coding basis to improve the solution during the evolutionary process. The features of implicit parallelism and state superposition in quantum mechanics and the global search capability of the genetic algorithm are exploited to get efficient computation. A set of well known test cases from BAliBASE2.0 is used as reference to evaluate the efficiency of the QGMALIGN optimization. The QGMALIGN results have been compared with the most popular methods (CLUSTALX, SAGA, DIALIGN, SB_PIMA, and QGMALIGN) results. The QGMALIGN results show that QGMALIGN performs well on the presenting biological data. The addition of genetic operators to the quantum algorithm lowers the cost of overall running time.

  10. Dual Band Deep Ultraviolet AlGaN Photodetectors

    NASA Technical Reports Server (NTRS)

    Aslam, S.; Miko, L.; Stahle, C.; Franz, D.; Pugel, D.; Guan, B.; Zhang, J. P.; Gaska, R.

    2007-01-01

    We report on the design, fabrication and characterization of a back-illuminated voltage bias selectable dual-band AlGaN UV photodetector. The photodetector can separate UVA and W-B band radiation by bias switching a two terminal n-p-n homojunction structure that is fabricated in the same pixel. When a forward bias is applied between the top and bottom electrodes, the detector can sense UV-A and reject W-B band radiation. Alternatively, under reverse bias, the photodetector can sense UV-B and reject UV-A band radiation.

  11. High charge-carrier mobility enables exploitation of carrier multiplication in quantum-dot films

    PubMed Central

    Sandeep, C. S. Suchand; Cate, Sybren ten; Schins, Juleon M.; Savenije, Tom J.; Liu, Yao; Law, Matt; Kinge, Sachin; Houtepen, Arjan J.; Siebbeles, Laurens D. A.

    2013-01-01

    Carrier multiplication, the generation of multiple electron–hole pairs by a single photon, is of great interest for solar cells as it may enhance their photocurrent. This process has been shown to occur efficiently in colloidal quantum dots, however, harvesting of the generated multiple charges has proved difficult. Here we show that by tuning the charge-carrier mobility in quantum-dot films, carrier multiplication can be optimized and may show an efficiency as high as in colloidal dispersion. Our results are explained quantitatively by the competition between dissociation of multiple electron–hole pairs and Auger recombination. Above a mobility of ~1 cm2 V−1 s−1, all charges escape Auger recombination and are quantitatively converted to free charges, offering the prospect of cheap quantum-dot solar cells with efficiencies in excess of the Shockley–Queisser limit. In addition, we show that the threshold energy for carrier multiplication is reduced to twice the band gap of the quantum dots. PMID:23974282

  12. Joint source-channel coding for a quantum multiple access channel

    NASA Astrophysics Data System (ADS)

    Wilde, Mark M.; Savov, Ivan

    2012-11-01

    Suppose that two senders each obtain one share of the output of a classical, bivariate, correlated information source. They would like to transmit the correlated source to a receiver using a quantum multiple access channel. In prior work, Cover, El Gamal and Salehi provided a combined source-channel coding strategy for a classical multiple access channel which outperforms the simpler ‘separation’ strategy where separate codebooks are used for the source coding and the channel coding tasks. In this paper, we prove that a coding strategy similar to the Cover-El Gamal-Salehi strategy and a corresponding quantum simultaneous decoder allow for the reliable transmission of a source over a quantum multiple access channel, as long as a set of information inequalities involving the Holevo quantity hold.

  13. Surface Passivation by Quantum Exclusion Using Multiple Layers

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E. (Inventor)

    2013-01-01

    A semiconductor device has a multilayer doping to provide improved passivation by quantum exclusion. The multilayer doping includes a plurality M of doped layers, where M is an integer greater than 1. The dopant sheet densities in the M doped layers need not be the same, but in principle can be selected to be the same sheet densities or to be different sheet densities. M-1 interleaved layers provided between the M doped layers are not deliberately doped (also referred to as "undoped layers"). Structures with M=2, M=3 and M=4 have been demonstrated and exhibit improved passivation.

  14. Reliability assessment of multiple quantum well avalanche photodiodes

    NASA Technical Reports Server (NTRS)

    Yun, Ilgu; Menkara, Hicham M.; Wang, Yang; Oguzman, Isamil H.; Kolnik, Jan; Brennan, Kevin F.; May, Gray S.; Wagner, Brent K.; Summers, Christopher J.

    1995-01-01

    The reliability of doped-barrier AlGaAs/GsAs multi-quantum well avalanche photodiodes fabricated by molecular beam epitaxy is investigated via accelerated life tests. Dark current and breakdown voltage were the parameters monitored. The activation energy of the degradation mechanism and median device lifetime were determined. Device failure probability as a function of time was computed using the lognormal model. Analysis using the electron beam induced current method revealed the degradation to be caused by ionic impurities or contamination in the passivation layer.

  15. Controlled quantum perfect teleportation of multiple arbitrary multi-qubit states

    NASA Astrophysics Data System (ADS)

    Shi, Runhua; Huang, Liusheng; Yang, Wei; Zhong, Hong

    2011-12-01

    We present an efficient controlled quantum perfect teleportation scheme. In our scheme, multiple senders can teleport multiple arbitrary unknown multi-qubit states to a single receiver via a previously shared entanglement state with the help of one or more controllers. Furthermore, our scheme has a very good performance in the measurement and operation complexity, since it only needs to perform Bell state and single-particle measurements and to apply Controlled-Not gate and other single-particle unitary operations. In addition, compared with traditional schemes, our scheme needs less qubits as the quantum resources and exchanges less classical information, and thus obtains higher communication efficiency.

  16. Room-Temperature Photocurrent Spectroscopy of GaAs/GaAlAs Multiple Quantum Wells,

    DTIC Science & Technology

    1994-11-15

    Hailong , Wang Qiuning, et al. DO..... ... . .I C- DTIC ~ELECTIEE 199|11O9034 19950109 034Ditiuinnlmed NAIC- ID(RS)T-0385-94 AOSSI.O •z [ A Si8 eol1Y de...MULTIPLE QUANTUM WELLS 5y: Duan Hailong , Wang Qiuning, et al. English pages: 12 Source: Bandaoti Xuebao, Vol. 12, Nr. 7, July 1991, pp. 399-4O4...TEMPERATURE PHOTOCURRENT SPECTROSCOPY OF GaAs/GaAlAs MULTIPLE QUANTUM WELLS DUAN HAILONG , WANG QIUNING, WU RONGHAN, ZENG YIPING and KONG MEIYING

  17. Single-loop multiple-pulse nonadiabatic holonomic quantum gates

    NASA Astrophysics Data System (ADS)

    Herterich, Emmi; Sjöqvist, Erik

    2016-11-01

    Nonadiabatic holonomic quantum computation provides the means to perform fast and robust quantum gates by utilizing the resilience of non-Abelian geometric phases to fluctuations of the path in state space. While the original scheme [E. Sjöqvist et al., New J. Phys. 14, 103035 (2012), 10.1088/1367-2630/14/10/103035] needs two loops in the Grassmann manifold (i.e., the space of computational subspaces of the full state space) to generate an arbitrary holonomic one-qubit gate, we propose single-loop one-qubit gates that constitute an efficient universal set of holonomic gates when combined with an entangling holonomic two-qubit gate. Our one-qubit gate is realized by dividing the loop into path segments, each of which is generated by a Λ -type Hamiltonian. We demonstrate that two path segments are sufficient to realize arbitrary single-loop holonomic one-qubit gates. We describe how our scheme can be implemented experimentally in a generic atomic system exhibiting a three-level Λ -coupling structure by utilizing carefully chosen laser pulses.

  18. Refractive Index of III-metal-polar and N-polar AlGaN Waveguides Grown by Metal Organic Chemical Vapor Deposition

    DTIC Science & Technology

    2013-06-03

    emitting and detecting light in the ultraviolet (UV) wave- length regime. Possible applications for UV light-emitting diodes (LEDs) and lasers could be...semiconductor lasers is available.1–9 Most of the problems that evolve during the fabrication of AlGaN based UV laser diodes may be accounted by the deep Si...2009). 7C. Rhodes, IEEE J. Quantum Electron. 10, 153 (1974). 8S. Nakamura, S. Pearton, and G. Fasol, The Blue Laser Diode , 2nd ed. (Springer Verlag

  19. Simultaneous nano-tracking of multiple motor proteins via spectral discrimination of quantum dots

    PubMed Central

    Kakizuka, Taishi; Ikezaki, Keigo; Kaneshiro, Junichi; Fujita, Hideaki; Watanabe, Tomonobu M.; Ichimura, Taro

    2016-01-01

    Simultaneous nanometric tracking of multiple motor proteins was achieved by combining multicolor fluorescent labeling of target proteins and imaging spectroscopy, revealing dynamic behaviors of multiple motor proteins at the sub-diffraction-limit scale. Using quantum dot probes of distinct colors, we experimentally verified the localization precision to be a few nanometers at temporal resolution of 30 ms or faster. One-dimensional processive movement of two heads of a single myosin molecule and multiple myosin molecules was successfully traced. Furthermore, the system was modified for two-dimensional measurement and applied to tracking of multiple myosin molecules. Our approach is useful for investigating cooperative movement of proteins in supramolecular nanomachinery. PMID:27446684

  20. Characteristics of AlGaAs/GaAs multiple quantum well infrared detectors

    NASA Technical Reports Server (NTRS)

    Janousek, Bruce K.; Rosenbluth, Mary L.; Oloughlin, Michael J.; Bloss, Walter L.; Deluccia, Frank J.; Kanter, Helmut; Perry, L. Elaine; Daugherty, Michael J.

    1990-01-01

    Researchers fabricated and characterized several AlGaAs/GaAs multiple quantum well infrared detectors to evaluate the ultimate performance of these devices for low infrared background applications. The detectors were designed to have a single bound state in the quantum well and the first excited state in the continuum above the AlGaAs conduction band edge. The difference in energy between the two levels, as determined by the quantum well width and aluminum mole fraction in the barrier, was chosen such that peak absorption would occur near 8 microns. The initial structures studied comprised 50 periods with 40 A well widths and 300 A Al(0.28)Ga(0.72)As barriers. The performance of these detectors are summarized. To better interpret these results and design optimized detectors, researchers modeled both the detector noise and tunneling currents. The noise model correctly predicts that multiple quantum well detectors will, indeed, exhibit noise lower than full shot noise. The tunneling current model predicts the dark current versus bias for any choice of design parameters in a multiple quantum well detector. This model predicts a substantially reduced dark current (x 10(exp 04)) for samples with 400 A barriers. To evaluate structures with thicker barriers, researchers fabricated and characterized detectors with 400 A and 500 A barriers; a comparison of detector dark currents is shown. These results are consistent with the predictions of the dark current model.

  1. Precision Control of Multiple Quantum Cascade Lasers for Calibration Systems

    SciTech Connect

    Taubman, Matthew S.; Myers, Tanya L.; Pratt, Richard M.; Stahl, Robert D.; Cannon, Bret D.

    2014-01-15

    We present a precision, digitally interfaced current controller for quantum cascade lasers, with demonstrated DC and modulated temperature coefficients of 1- 2 ppm/ºC and 15 ppm/ºC respectively. High linearity digital to analog converters (DACs) together with an ultra-precision voltage reference, produce highly stable, precision voltages. These are in turn selected by a low charge-injection multiplexer (MUX) chip, which are then used to set output currents via a linear current regulator. The controller is operated in conjunction with a power multiplexing unit, allowing one of three lasers to be driven by the controller while ensuring protection of controller and all lasers during operation, standby and switching. Simple ASCII commands sent over a USB connection to a microprocessor located in the current controller operate both the controller (via the DACs and MUX chip) and the power multiplexer.

  2. Surface Passivation by Quantum Exclusion Using Multiple Layers

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E. (Inventor)

    2015-01-01

    A semiconductor device has a multilayer doping to provide improved passivation by quantum exclusion. The multilayer doping includes at least two doped layers fabricated using MBE methods. The dopant sheet densities in the doped layers need not be the same, but in principle can be selected to be the same sheet densities or to be different sheet densities. The electrically active dopant sheet densities are quite high, reaching more than 1.times.10.sup.14 cm.sup.-2, and locally exceeding 10.sup.22 per cubic centimeter. It has been found that silicon detector devices that have two or more such dopant layers exhibit improved resistance to degradation by UV radiation, at least at wavelengths of 193 nm, as compared to conventional silicon p-on-n devices.

  3. Precision control of multiple quantum cascade lasers for calibration systems

    SciTech Connect

    Taubman, Matthew S. Myers, Tanya L.; Pratt, Richard M.; Stahl, Robert D.; Cannon, Bret D.

    2014-01-15

    We present a precision, 1-A, digitally interfaced current controller for quantum cascade lasers, with demonstrated temperature coefficients for continuous and 40-kHz full-depth square-wave modulated operation, of 1–2 ppm/ °C and 15 ppm/ °C, respectively. High precision digital to analog converters (DACs) together with an ultra-precision voltage reference produce highly stable, precision voltages, which are selected by a multiplexer (MUX) chip to set output currents via a linear current regulator. The controller is operated in conjunction with a power multiplexing unit, allowing one of three lasers to be driven by the controller, while ensuring protection of controller and all lasers during operation, standby, and switching. Simple ASCII commands sent over a USB connection to a microprocessor located in the current controller operate both the controller (via the DACs and MUX chip) and the power multiplexer.

  4. Multiple-User Quantum Information Theory for Optical Communication Channels

    DTIC Science & Technology

    2008-06-01

    detection uses 6 spatial modes with (from top to bottom) 1 ≤ q ≤ 3. ( d ) Wideband, multiple- spatial -mode capacities (in bits per second) for the scalar...detection imply that their wideband multiple- spatial -mode capacities bear the follow- ing relationship, Chom(P ) = 1 2 Chet (4P ). (2.22) Thus, only two... spatial modes, but we have only plotted the spectra for 1 ≤ q ≤ 6. In Fig. 2-4( d ) we have plotted the heterodyne detection, homodyne detection, and

  5. Quantum circuits for -multiplication with subquadratic gate count

    NASA Astrophysics Data System (ADS)

    Kepley, Shane; Steinwandt, Rainer

    2015-07-01

    One of the most cost-critical operations when applying Shor's algorithm to binary elliptic curves is the underlying field arithmetic. Here, we consider binary fields in polynomial basis representation, targeting especially field sizes as used in elliptic curve cryptography. Building on Karatsuba's algorithm, our software implementation automatically synthesizes a multiplication circuit with the number of -gates being bounded by for any given reduction polynomial of degree . If an irreducible trinomial of degree exists, then a multiplication circuit with a total gate count of is available.

  6. Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers

    NASA Astrophysics Data System (ADS)

    Podlipskas, Ž.; Aleksiejūnas, R.; Kadys, A.; Mickevičius, J.; Jurkevičius, J.; Tamulaitis, G.; Shur, M.; Shatalov, M.; Yang, J.; Gaska, R.

    2016-04-01

    Dynamics of radiative and nonradiative recombination of non-equilibrium carriers is investigated in thick AlGaN epitaxial layers with Al content ranging from 0.11 to 0.71. The internal quantum efficiency (IQE) in the epilayers was obtained using two approaches: either estimated from PL measurements or calculated using the recombination coefficients of a simple ABC model, retrieved by fitting the kinetics of light induced transient gratings (LITG). At photoexcited carrier densities below ~1019 cm-3, both approaches provided similar IQE values indicating that the simple ABC model is applicable to analyze carrier recombination at such carrier densities. The increase in IQE at higher carrier densities slowed down for the values extracted from PL considerably faster than for those obtained from LITG transients. This discrepancy is explained in terms of the mixed nature of the rate coefficient B caused by the onset of the density-activated nonradiative recombination at high carrier densities.

  7. Interface and photoluminescence characteristics of graphene-(GaN/InGaN){sub n} multiple quantum wells hybrid structure

    SciTech Connect

    Wang, Liancheng E-mail: lzq@semi.ac.cn; Liu, Zhiqiang E-mail: lzq@semi.ac.cn Tian, Ying Dong; Yi, Xiaoyan; Wang, Junxi; Li, Jinmin; Wang, Guohong; Zhang, Zi-Hui E-mail: lzq@semi.ac.cn

    2016-04-14

    The effects of graphene on the optical properties of active system, e.g., the InGaN/GaN multiple quantum wells, are thoroughly investigated and clarified. Here, we have investigated the mechanisms accounting for the photoluminescence reduction for the graphene covered GaN/InGaN multiple quantum wells hybrid structure. Compared to the bare multiple quantum wells, the photoluminescence intensity of graphene covered multiple quantum wells showed a 39% decrease after excluding the graphene absorption losses. The responsible mechanisms have been identified with the following factors: (1) the graphene two dimensional hole gas intensifies the polarization field in multiple quantum wells, thus steepening the quantum well band profile and causing hole-electron pairs to further separate; (2) a lower affinity of graphene compared to air leading to a weaker capability to confine the excited hot electrons in multiple quantum wells; and (3) exciton transfer through non-radiative energy transfer process. These factors are theoretically analysed based on advanced physical models of semiconductor devices calculations and experimentally verified by varying structural parameters, such as the indium fraction in multiple quantum wells and the thickness of the last GaN quantum barrier spacer layer.

  8. Interface and photoluminescence characteristics of graphene-(GaN/InGaN)n multiple quantum wells hybrid structure

    NASA Astrophysics Data System (ADS)

    Wang, Liancheng; Liu, Zhiqiang; Zhang, Zi-Hui; Tian, Ying Dong; Yi, Xiaoyan; Wang, Junxi; Li, Jinmin; Wang, Guohong

    2016-04-01

    The effects of graphene on the optical properties of active system, e.g., the InGaN/GaN multiple quantum wells, are thoroughly investigated and clarified. Here, we have investigated the mechanisms accounting for the photoluminescence reduction for the graphene covered GaN/InGaN multiple quantum wells hybrid structure. Compared to the bare multiple quantum wells, the photoluminescence intensity of graphene covered multiple quantum wells showed a 39% decrease after excluding the graphene absorption losses. The responsible mechanisms have been identified with the following factors: (1) the graphene two dimensional hole gas intensifies the polarization field in multiple quantum wells, thus steepening the quantum well band profile and causing hole-electron pairs to further separate; (2) a lower affinity of graphene compared to air leading to a weaker capability to confine the excited hot electrons in multiple quantum wells; and (3) exciton transfer through non-radiative energy transfer process. These factors are theoretically analysed based on advanced physical models of semiconductor devices calculations and experimentally verified by varying structural parameters, such as the indium fraction in multiple quantum wells and the thickness of the last GaN quantum barrier spacer layer.

  9. Impact ionization can explain carrier multiplication in PbSe quantum dots.

    PubMed

    Franceschetti, A; An, J M; Zunger, A

    2006-10-01

    The efficiency of conventional solar cells is limited because the excess energy of absorbed photons converts to heat instead of producing electron-hole pairs. Recently, efficient carrier multiplication has been observed in semiconductor quantum dots. In this process, a single, high-energy photon generates multiple electron-hole pairs. Rather exotic mechanisms have been proposed to explain the efficiency of carrier multiplication in PbSe quantum dots. Using atomistic pseudopotential calculations, we show here that the more conventional impact ionization mechanism, whereby a photogenerated electron-hole pair decays into a biexciton in a process driven by Coulomb interactions between the carriers, can explain both the rate (<1 ps) and the energy threshold ( approximately 2.2 times the band gap) of carrier multiplication, without the need to invoke alternative mechanisms.

  10. Intersubband Transition in GaN/InGaN Multiple Quantum Wells

    PubMed Central

    Chen, G.; Wang, X. Q.; Rong, X.; Wang, P.; Xu, F. J.; Tang, N.; Qin, Z. X.; Chen, Y. H.; Shen, B.

    2015-01-01

    Utilizing the growth temperature controlled epitaxy, high quality GaN/In0.15Ga0.85N multiple quantum wells designed for intersubband transition (ISBT) as novel candidates in III-nitride infrared device applications have been experimentally realized for the first time. Photo-absorption originated from the ISBT has been successfully observed at infrared regime covering the 3–5 μm atmosphere window, where the central absorption wavelength is modulated by adjusting the quantum well width. With increasing the quantum well thickness, the ISBT center wave length blue shifts at thickness less than 2.8 nm and then redshifts with further increase of the well thickness. The non-monotonic trend is most likely due to the polarization induced asymmetric shape of the quantum wells. PMID:26089133

  11. Control of coherence transfer via tunneling in quadruple and multiple quantum dots

    NASA Astrophysics Data System (ADS)

    Tian, Si-Cong; Xing, En-Bo; Wan, Ren-Gang; Wang, Chun-Liang; Wang, Li-Jie; Shu, Shi-Li; Tong, Cun-Zhu; Wang, Li-Jun

    2016-12-01

    Transfer and manipulation of coherence among the ground state and indirect exciton states via tunneling in quadruple and multiple quantum dots is analyzed. By applying suitable amplitudes and sequences of the pump and tunneling pulses, a complete transfer of coherence or an arbitrary distribution of coherence of multiple states can be realized. The method, which is an adiabatic passage process, is different from previous works on quantum dot molecules in the way that the population can transfer from the ground state to the indirect exciton states without populating the direct exciton state, and thus no spontaneous emission occurs. This investigation can provide further insight to help the experimental development of coherence transfer in semiconductor structures, and may have potential applications in quantum information processing.

  12. Modulating retroreflector architecture using multiple quantum wells for free-space optical communications

    NASA Astrophysics Data System (ADS)

    Gilbreath, G. Charmaine; Rabinovich, William S.; Mahon, Rita; Corson, Michael R.; Kline, John F.; Resnick, Joshua H.; Merk, H. C.; Vilcheck, Michael J.

    1998-12-01

    In this paper, we describe a demonstration using a Multiple Quantum Well modulator combined with an optical retroreflector which supported a high speed free space optical data link. Video images were transmitted over an 859 nanometer link at a rate of 460 kilo bits per second, where rate of modulation was limited by demonstration hardware, not the modulator. Reflection architectures for the modulator were used although transmission architectures have also been investigated but are not discussed in this paper. The modulator was a GaAs/Al0.3Ga0.7As quantum well which was designed and fabricated for use as a shutter at the Naval Research Laboratory. We believe these are the first results reported demonstrating a high speed free space optical data link using multiple quantum well shutters combined with retroreflectors for viable free space optical communications.

  13. Quantum Optimal Multiple Assignment Scheme for Realizing General Access Structure of Secret Sharing

    NASA Astrophysics Data System (ADS)

    Matsumoto, Ryutaroh

    The multiple assignment scheme is to assign one or more shares to single participant so that any kind of access structure can be realized by classical secret sharing schemes. We propose its quantum version including ramp secret sharing schemes. Then we propose an integer optimization approach to minimize the average share size.

  14. Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs

    NASA Astrophysics Data System (ADS)

    Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; Johnson, Jared M.; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Hwang, Jinwoo; Rajan, Siddharth

    2017-07-01

    In this work, we investigate the use of nanoscale polarization engineering to achieve efficient hole injection from metals to ultra-wide bandgap AlGaN, and we show that UV-reflective aluminum (Al) layers can be used for hole injection into p-AlGaN. The dependence of tunneling on the work function of the metal was investigated, and it was found that highly reflective Al metal layers can enable efficient hole injection into p-AlGaN, despite the relatively low work function of Al. Efficient tunneling hole injection was confirmed by light emission at 326 nm with an on-wafer peak external quantum efficiency and a wall-plug efficiency of 2.43% and 1.33%, respectively. A high power density of 79.0 W/cm2 was measured at 1200 A/cm2. The metal/semiconductor tunnel junction structure demonstrated here could provide significant advantages for efficient and manufacturable device topologies for high power UV emitters.

  15. Composition dependent valence band order in c-oriented wurtzite AlGaN layers

    SciTech Connect

    Neuschl, B. Helbing, J.; Knab, M.; Lauer, H.; Madel, M.; Thonke, K.; Feneberg, M.

    2014-09-21

    The valence band order of polar wurtzite aluminum gallium nitride (AlGaN) layers is analyzed for a dense series of samples, grown heteroepitaxially on sapphire substrates, covering the complete composition range. The excitonic transition energies, found by temperature dependent photoluminescence (PL) spectroscopy, were corrected to the unstrained state using input from X-ray diffraction. k∙p theory yields a critical relative aluminum concentration x{sub c}=(0.09±0.05) for the crossing of the uppermost two valence bands for strain free material, shifting to higher values for compressively strained samples, as supported by polarization dependent PL. The analysis of the strain dependent valence band crossing reconciles the findings of other research groups, where sample strain was neglected. We found a bowing for the energy band gap to the valence band with Γ₉ symmetry of b{sub Γ₉}=0.85eV, and propose a possible bowing for the crystal field energy of b{sub cf}=-0.12eV. A comparison of the light extraction efficiency perpendicular and parallel to the c axis of Al{sub x}Ga{sub 1-x}N/Al{sub y}Ga{sub 1-y}N quantum well structures is discussed for different compositions.

  16. Monitoring and Controlling of Strain During MOCVD of AlGaN for UV Optoelectronics

    SciTech Connect

    Han, J.; Crawford, M.H.; Shul, R.J.; Hearne, S.J.; Chason, E.; Figiel, J.J.; Banas, M.

    1999-01-14

    The grown-in tensile strain, due to a lattice mismatch between AlGaN and GaN, is responsible for the observed cracking that seriously limits the feasibility of nitride-based ultraviolet (UV) emitters. We report in-situ monitoring of strain/stress during MOCVD of AlGaN based on a wafer-curvature measurement technique. The strain/stress measurement confirms the presence of tensile strain during growth of AlGaN pseudomorphically on a thick GaN layer. Further growth leads to the onset of stress relief through crack generation. We find that the growth of AlGaN directly on low-temperature (LT) GaN or AlN buffer layers results in a reduced and possibly controllable strain.

  17. Generation of Multiple Excitons in Ag2S Quantum Dots: Single High-Energy versus Multiple-Photon Excitation.

    PubMed

    Sun, Jingya; Yu, Weili; Usman, Anwar; Isimjan, Tayirjan T; DGobbo, Silvano; Alarousu, Erkki; Takanabe, Kazuhiro; Mohammed, Omar F

    2014-02-20

    We explored biexciton generation via carrier multiplication (or multiple-exciton generation) by high-energy photons and by multiple-photon absorption in Ag2S quantum dots (QDs) using femtosecond broad-band transient absorption spectroscopy. Irrespective of the size of the QDs and how the multiple excitons are generated in the Ag2S QDs, two distinct characteristic time constants of 9.6-10.2 and 135-175 ps are obtained for the nonradiative Auger recombination of the multiple excitons, indicating the existence of two binding excitons, namely, tightly bound and weakly bound excitons. More importantly, the lifetimes of multiple excitons in Ag2S QDs were about 1 and 2 orders of magnitude longer than those of comparable size PbS QDs and single-walled carbon nanotubes, respectively. This result is significant because it suggests that by utilizing an appropriate electron acceptor, there is a higher possibility to extract multiple electron-hole pairs in Ag2S QDs, which should improve the performance of QD-based solar cell devices.

  18. An optimized quantum information splitting scheme with multiple controllers

    NASA Astrophysics Data System (ADS)

    Jiang, Min

    2016-12-01

    We propose an efficient scheme for splitting multi-qudit information with cooperative control of multiple agents. Each controller is assigned one controlling qudit, and he can monitor the state sharing of all multi-qudit information. Compared with the existing schemes, our scheme requires less resource consumption and approaches higher communication efficiency. In addition, our proposal involves only generalized Bell-state measurement, single-qudit measurement, one-qudit gates and a unitary-reduction operation, which makes it flexible and achievable for physical implementation.

  19. Coherent manipulation of valley states at multiple charge configurations of a silicon quantum dot device.

    PubMed

    Schoenfield, Joshua S; Freeman, Blake M; Jiang, HongWen

    2017-07-05

    Qubits based on silicon quantum dots are emerging as leading candidates for the solid-state implementation of quantum information processing. In silicon, valley states represent a degree of freedom in addition to spin and charge. Characterizing and controlling valley states is critical for the encoding and read-out of electrons-in-silicon-based qubits. Here, we report the coherent manipulation of a qubit, which is based on the two valley states of an electron confined in a silicon quantum dot. We carry out valley qubit operations at multiple charge configurations of the double quantum dot device. The dependence of coherent oscillations on pulse excitation level and duration allows us to map out the energy dispersion as a function of detuning as well as the phase coherence time of the valley qubit. The coherent manipulation also provides a method of measuring valley splittings that are too small to probe with conventional methods.Silicon quantum dots provide a promising platform for quantum computing based on manipulation of electron degrees of freedom in a well-characterized environment. Here, the authors demonstrate coherent control of electron valley states, yielding an accurate determination of the valley splitting.

  20. Multiplicative logarithmic corrections to quantum criticality in three-dimensional dimerized antiferromagnets

    NASA Astrophysics Data System (ADS)

    Qin, Yan Qi; Normand, B.; Sandvik, Anders W.; Meng, Zi Yang

    2015-12-01

    We investigate the quantum phase transition in an S =1 /2 dimerized Heisenberg antiferromagnet in three spatial dimensions. By performing large-scale quantum Monte Carlo simulations and detailed finite-size scaling analyses, we obtain high-precision results for the quantum critical properties at the transition from the magnetically disordered dimer-singlet phase to the antiferromagnetically ordered Néel phase. This transition breaks O(N ) symmetry with N =3 in D =3 +1 dimensions. This is the upper critical dimension, where multiplicative logarithmic corrections to the leading mean-field critical properties are expected; we extract these corrections, establishing their precise forms for both the zero-temperature staggered magnetization ms and the Néel temperature TN. We present a scaling ansatz for TN, including logarithmic corrections, which agrees with our data and indicates exact linearity with ms, implying a complete decoupling of quantum and thermal fluctuation effects even arbitrarily close to the quantum critical point. We also demonstrate the predicted N -independent leading and subleading logarithmic corrections in the size dependence of the staggered magnetic susceptibility. These logarithmic scaling forms have not previously been identified or verified by unbiased numerical methods, and we discuss their relevance to experimental studies of dimerized quantum antiferromagnets such as TlCuCl3.

  1. Multiplicative logarithmic corrections to quantum criticality in three-dimensional dimerized antiferromagnets

    NASA Astrophysics Data System (ADS)

    Qin, Yanqi; Normand, Bruce; Sandvik, Anders; Meng, Zi Yang

    We investigate the quantum phase transition in an S=1/2 dimerized Heisenberg antiferromagnet in three spatial dimensions. By means of quantum Monte Carlo simulations and finite-size scaling analyses, we get high-precision results for the quantum critical properties at the transition from the magnetically disordered dimer-singlet phase to the ordered Neel phase. This transition breaks O(N) symmetry with N=3 in D=3+1 dimensions. This is the upper critical dimension, where multiplicative logarithmic corrections to the leading mean-field critical properties are expected; we extract these corrections, establishing their precise forms for both the zero-temperature staggered magnetization, ms, and the Neel temperature, TN. We present a scaling ansatz for TN, including logarithmic corrections, which agrees with our data and indicates exact linearity with ms, implying a complete decoupling of quantum and thermal fluctuation effects close to the quantum critical point. These logarithmic scaling forms have not previously identified or verified by unbiased numerical methods and we discuss their relevance to experimental studies of dimerized quantum antiferromagnets such as TlCuCl3. Ref.: arXiv:1506.06073

  2. High performance red-emitting multiple layer InGaN/GaN quantum dot lasers

    NASA Astrophysics Data System (ADS)

    Frost, Thomas; Hazari, Arnab; Aiello, Anthony; Zunaid Baten, Md; Yan, Lifan; Mirecki-Millunchick, Joanna; Bhattacharya, Pallab

    2016-03-01

    InGaN/GaN self-organized quantum dots can provide useful advantages over quantum wells for the realization of long-wavelength visible light sources because the dots are formed by strain relaxation. A III-nitride based laser emitting in the red (λ ˜ 630 nm), which has not been demonstrated with quantum wells, would be useful for a host of applications. We have investigated the epitaxy and characteristics of self-organized InGaN/GaN multiple layer quantum dots grown by plasma-assisted molecular beam epitaxy and have optimized their properties by tuning the growth parameters. Red-emitting (λ ˜ 630 nm) quantum dots have radiative lifetime ˜2.5 ns and internal quantum efficiency greater than 50%. Edge-emitting red-lasers with multi-dot layers in the active region exhibit an extremely low threshold current density of 1.6 kA/cm2, a high temperature coefficient T0 = 240 K, and a large differential gain dg/dn = 9 × 10-17 cm2.

  3. Quadrupole-Echo Techniques in Multiple-Quantum-Filtered NMR Spectroscopy of Heterogeneous Systems

    NASA Astrophysics Data System (ADS)

    Eliav, U.; Navon, G.

    Multiple-quantum-filtered quadrupole-echo pulse sequences for spin I = 1 and I = {3}/{2} are suggested. A general condition for obtaining simultaneously Zeeman and quadrupolar echo is formulated. A theoretical analysis of the various pulse sequences was performed on the basis of second-order perturbation approximation of the Liouville equation for the density matrix. The extent of refocusing as a function of the ratio of the residual quadrupolar interaction and the relaxation rates was calculated. Experimental results are presented for 2H and 23Na in cartilage as an example of a heterogeneous system with residual quadrupolar interaction. The difference between relaxation times measured by the multiple-quantum-filtered echo techniques and those measured by conventional multiple-quantum-filtered NMR spectroscopy is a simple diagnostic of anisotropic motion that leads to a residual quadrupolar interaction. The results of the echo experiments are compared with the relaxation times computed on the basis of lineshape analysis of double-quantum-filtered spectra of a heterogeneous system.

  4. Influence of AlN thickness on AlGaN epilayer grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Jayasakthi, M.; Juillaguet, S.; Peyre, H.; Konczewicz, L.; Baskar, K.; Contreras, S.

    2016-10-01

    AlGaN/AlN layers were grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. The AlN buffer thickness was varied from 400 nm to 800 nm. The AlGaN layer thickness was 1000 nm. The crystalline quality, thickness and composition of AlGaN were determined using high resolution X-ray diffraction (HRXRD). The threading dislocation density (TDD) was found to decrease with increase of AlN layer thickness. Reciprocal space mapping (RSM) was used to estimate the strain and relaxation between AlGaN and AlN. The optical properties of AlGaN layers were investigated by temperature dependent photoluminescence (PL). PL intensities of AlGaN layers increases with increasing the AlN thickness. The surface morphology of AlGaN was studied by atomic force microscopy (AFM). Root mean square (RMS) roughness values were found to be decreased while increase of AlN thickness.

  5. Measuring correlations of cold-atom systems using multiple quantum probes

    NASA Astrophysics Data System (ADS)

    Streif, Michael; Buchleitner, Andreas; Jaksch, Dieter; Mur-Petit, Jordi

    2016-11-01

    We present a nondestructive method to probe a complex quantum system using multiple-impurity atoms as quantum probes. Our protocol provides access to different equilibrium properties of the system by changing its coupling to the probes. In particular, we show that measurements with two probes reveal the system's nonlocal two-point density correlations, for probe-system contact interactions. We illustrate our findings with analytic and numerical calculations for the Bose-Hubbard model in the weakly and strongly interacting regimes, under conditions relevant to ongoing experiments in cold-atom systems.

  6. Excitonic localization at macrostep edges in AlGaN/AlGaN multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Hou, Mengjun; Qin, Zhixin; Zhang, Lisheng; Han, Tianyang; Wang, Mingxing; Xu, Fujun; Wang, Xinqiang; Yu, Tongjun; Fang, Zheyu; Shen, Bo

    2017-04-01

    Double peaks at wavelength of 276 and 290 nm are observed for AlGaN/AlGaN multiple quantum wells (MQWs). Cathodoluminescence (CL) mappings identify that the emission at 290 nm originates from the macrostep edges. Potential minima induced by local variation of QW thickness and Ga incorporation are found along the step edges, where quantum wires (QWRs) are formed. The lateral advance rate of macrostep (∼310 nm/h) is obtained by investigating the distribution of QWRs. Temperature-dependent CL spectrum suggest that thermal quenching for 290 nm emission is dramatically suppressed compared with that for conventional QWs emission, which shows excitonic localization characteristics of QWRs.

  7. Multiple-quantum cross-polarization in MAS NMR of quadrupolar nuclei

    NASA Astrophysics Data System (ADS)

    Ashbrook, Sharon E.; Brown, Steven P.; Wimperis, Stephen

    1998-05-01

    Using 27Al ( I=5/2) NMR of aluminium acetylacetonate, we show that it is possible to cross-polarize from a spin I=1/2 nucleus ( 1H) directly to the central triple-quantum transition of a half-integer quadrupolar nucleus ( 27Al) in a powdered sample under MAS conditions. The optimum conditions for this multiple-quantum cross-polarization (MQCP) are investigated experimentally and compared with existing theoretical results. The new technique is applied to the recently introduced two-dimensional MQMAS experiment for recording high-resolution NMR spectra of half-integer quadrupolar nuclei.

  8. Pulsed field gradient multiple-quantum MAS NMR spectroscopy of half-integer spin quadrupolar nuclei

    NASA Astrophysics Data System (ADS)

    Fyfe, C. A.; Skibsted, J.; Grondey, H.; Meyer zu Altenschildesche, H.

    1997-12-01

    Pulsed field gradients (PFGs) have been applied to select coherence transfer pathways in multiple-quantum (MQ) MAS NMR spectra of half-integer spin quadrupolar nuclei in rigid solids. 27Al triple-quantum (3Q) MAS NMR spectra of the aluminophosphate molecular sieves VPI-5 and AlPO 4-18 have been used to demonstrate the selection of the (0)→(3)→(-1) coherence transfer pathway using PFGs and no phase cycling. Compared to MQMAS experiments that employ phase cycling schemes, the main advantage of the PFG-MQMAS technique is its simplicity, which should facilitate the combination of MQMAS with other pulse sequences.

  9. Possibility of multiple tunnelling current peaks in a coupled quantum well system

    NASA Astrophysics Data System (ADS)

    Luis, D.; Díaz, J. P.; Capuj, N. E.; Cruz, H.

    2000-07-01

    In this work, we have numerically integrated in space and time the effective-mass nonlinear Schrödinger equation for an electron wave packet in a bilayer electron system. Considering both Hartree and exchange-correlation potentials, we have calculated the tunnelling rates between the two quantum wells when an external bias is applied in the double quantum well system. Due to the nonlinear effective-mass equation, it is found that the charge dynamically trapped in both wells produces a reaction field which modifies the system resonant condition. At different electronic sheet densities, we have shown the possibility of having multiple resonant tunnelling peaks in a bilayer electron system.

  10. A practical multiple reflection technique for improving the quantum efficiency of photomultiplier tubes.

    PubMed

    Oke, J B; Schild, R E

    1968-04-01

    A technique is described by which multiple reflection techniques can be used to increase the quantum efficiency of some end-on photomultiplier tubes in the red and near ir. The method can be used in practice for astronomical and other applications where field lens imaging on the cathode is required and where small cathodes are desirable. Tests of a group of unselected production model S-20 and S-1 photomultiplier tubes show quantum efficiency gains as high as factors of 3.8 and 1.8, respectively, at practical operating wavelengths.

  11. MOCVD growth of AlGaN UV LEDs

    SciTech Connect

    Han, J.; Crawford, M.H.

    1998-09-01

    Issues related to the MOCVD growth of AlGaN, specifically the gas-phase parasitic reactions among TMG, TMA, and NH{sub 3}, are studied using an in-situ optical reflectometer. It is observed that the presence of the well-known gas phase adduct (TMA: NH{sub 3}) could seriously hinder the incorporation behavior of TMGa. Relatively low reactor pressures (30--50 Torr) are employed to grow an AlGaN/GaN SCH QW p-n diode structure. The UV emission at 360 nm (FWHM {approximately} 10 nm) represents the first report of LED operation from an indium-free GaN QW diode.

  12. Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240–350 nm emission

    SciTech Connect

    Himwas, C.; Hertog, M. den; Dang, Le Si; Songmuang, R.; Monroy, E.

    2014-12-15

    We present structural and optical studies of AlGaN sections and AlGaN/AlN nanodisks (NDs) in nanowires grown by plasma-assisted molecular beam epitaxy. The Al-Ga intermixing at Al(Ga)N/GaN interfaces and the chemical inhomogeneity in AlGaN NDs evidenced by scanning transmission electron microscopy are attributed to the strain relaxation process. This interpretation is supported by the three-dimensional strain distribution calculated by minimizing the elastic energy in the structure. The alloy inhomogeneity increases with the Al content, leading to enhanced carrier localization signatures in the luminescence characteristics, i.e., red shift of the emission, s-shaped temperature dependence, and linewidth broadening. Despite these effects, the emission energy of AlGaN/AlN NDs can be tuned in the 240–350 nm range with internal quantum efficiencies around 30%.

  13. Molecular beam epitaxy growth of Al-rich AlGaN nanowires for deep ultraviolet optoelectronics

    NASA Astrophysics Data System (ADS)

    Zhao, S.; Woo, S. Y.; Sadaf, S. M.; Wu, Y.; Pofelski, A.; Laleyan, D. A.; Rashid, R. T.; Wang, Y.; Botton, G. A.; Mi, Z.

    2016-08-01

    Self-organized AlGaN nanowires by molecular beam epitaxy have attracted significant attention for deep ultraviolet optoelectronics. However, due to the strong compositional modulations under conventional nitrogen rich growth conditions, emission wavelengths less than 250 nm have remained inaccessible. Here we show that Al-rich AlGaN nanowires with much improved compositional uniformity can be achieved in a new growth paradigm, wherein a precise control on the optical bandgap of ternary AlGaN nanowires can be achieved by varying the substrate temperature. AlGaN nanowire LEDs, with emission wavelengths spanning from 236 to 280 nm, are also demonstrated.

  14. Singlet fission in pentacene through multiple exciton quantum states

    NASA Astrophysics Data System (ADS)

    Zhang, Zhiyong; Zimmerman, Paul; Musgrave, Charles

    2010-03-01

    Multi-exciton generation (MEG) has been reported for several materials and may dramatically increase solar cell efficiency. Singlet fission is the molecular analogue of MEG and has been observed in various systems, including tetracene and pentacene, however, no fundamental mechanism for singlet fission has yet been described, although it may govern MEG processes in a variety of materials. Because photoexcited states have single-exciton character, singlet fission to produce a pair of triplet excitons must involve an intermediate state that: (1) exhibits multi-exciton (ME) character, (2) is accessible from S1 and satisfies the fission energy requirement, and (3) efficiently dissociates into multiple electron-hole pairs. Here, we use sophisticated ab initio calculations to show that singlet fission in pentacene proceeds through a dark state (D) of ME character that lies just below S1, satisfies the fission energy requirement (ED>2ET0), and splits into two triplets (2xT0). In tetracene, D lies just above S1, consistent with the observation that singlet fission is thermally activated in tetracene. Rational design of photovoltaic systems that exploit singlet fission will require ab initio analysis of ME states such as D.

  15. Carrier multiplication detected through transient photocurrent in device-grade films of lead selenide quantum dots

    DOE PAGES

    Gao, Jianbo; Fidler, Andrew F.; Klimov, Victor I.

    2015-09-08

    In carrier multiplication, the absorption of a single photon results in two or more electron–hole pairs. Quantum dots are promising materials for implementing carrier multiplication principles in real-life technologies. So far, however, most of research in this area has focused on optical studies of solution samples with yet to be proven relevance to practical devices. We report ultra-fast electro-optical studies of device-grade films of electronically coupled quantum dots that allow us to observe multiplication directly in the photocurrent. Our studies help rationalize previous results from both optical spectroscopy and steady-state photocurrent measurements and also provide new insights into effects ofmore » electric field and ligand treatments on multiexciton yields. Importantly, we demonstrate that using appropriate chemical treatments of the films, extra charges produced by carrier multiplication can be extracted from the quantum dots before they are lost to Auger recombination and hence can contribute to photocurrent of practical devices.« less

  16. Multiple exciton generation for photoelectrochemical hydrogen evolution reactions with quantum yields exceeding 100%

    NASA Astrophysics Data System (ADS)

    Yan, Yong; Crisp, Ryan W.; Gu, Jing; Chernomordik, Boris D.; Pach, Gregory F.; Marshall, Ashley R.; Turner, John A.; Beard, Matthew C.

    2017-04-01

    Multiple exciton generation (MEG) in quantum dots (QDs) has the potential to greatly increase the power conversion efficiency in solar cells and in solar-fuel production. During the MEG process, two electron-hole pairs (excitons) are created from the absorption of one high-energy photon, bypassing hot-carrier cooling via phonon emission. Here we demonstrate that extra carriers produced via MEG can be used to drive a chemical reaction with quantum efficiency above 100%. We developed a lead sulfide (PbS) QD photoelectrochemical cell that is able to drive hydrogen evolution from aqueous Na2S solution with a peak external quantum efficiency exceeding 100%. QD photoelectrodes that were measured all demonstrated MEG when the incident photon energy was larger than 2.7 times the bandgap energy. Our results demonstrate a new direction in exploring high-efficiency approaches to solar fuels.

  17. Multiple exciton generation for photoelectrochemical hydrogen evolution reactions with quantum yields exceeding 100%

    DOE PAGES

    Yan, Yong; Crisp, Ryan W.; Gu, Jing; ...

    2017-04-03

    Multiple exciton generation (MEG) in quantum dots (QDs) has the potential to greatly increase the power conversion efficiency in solar cells and in solar-fuel production. During the MEG process, two electron-hole pairs (excitons) are created from the absorption of one high-energy photon, bypassing hot-carrier cooling via phonon emission. Here we demonstrate that extra carriers produced via MEG can be used to drive a chemical reaction with quantum efficiency above 100%. We developed a lead sulfide (PbS) QD photoelectrochemical cell that is able to drive hydrogen evolution from aqueous Na2S solution with a peak external quantum efficiency exceeding 100%. QD photoelectrodesmore » that were measured all demonstrated MEG when the incident photon energy was larger than 2.7 times the bandgap energy. Finally, our results demonstrate a new direction in exploring high-efficiency approaches to solar fuels.« less

  18. Code-division multiple-access multiuser demodulator by using quantum fluctuations

    NASA Astrophysics Data System (ADS)

    Otsubo, Yosuke; Inoue, Jun-ichi; Nagata, Kenji; Okada, Masato

    2014-07-01

    We examine the average-case performance of a code-division multiple-access (CDMA) multiuser demodulator in which quantum fluctuations are utilized to demodulate the original message within the context of Bayesian inference. The quantum fluctuations are built into the system as a transverse field in the infinite-range Ising spin glass model. We evaluate the performance measurements by using statistical mechanics. We confirm that the CDMA multiuser modulator using quantum fluctuations achieve roughly the same performance as the conventional CDMA multiuser modulator through thermal fluctuations on average. We also find that the relationship between the quality of the original information retrieval and the amplitude of the transverse field is somehow a "universal feature" in typical probabilistic information processing, viz., in image restoration, error-correcting codes, and CDMA multiuser demodulation.

  19. Highly efficient multiple-layer CdS quantum dot sensitized III-V solar cells.

    PubMed

    Lin, Chien-Chung; Han, Hau-Vei; Chen, Hsin-Chu; Chen, Kuo-Ju; Tsai, Yu-Lin; Lin, Wein-Yi; Kuo, Hao-Chung; Yu, Peichen

    2014-02-01

    In this review, the concept of utilization of solar spectrum in order to increase the solar cell efficiency is discussed. Among the three mechanisms, down-shifting effect is investigated in detail. Organic dye, rare-earth minerals and quantum dots are three most popular down-shift materials. While the enhancement of solar cell efficiency was not clearly observed in the past, the advances in quantum dot fabrication have brought strong response out of the hybrid platform of a quantum dot solar cell. A multiple layer structure, including PDMS as the isolation layer, is proposed and demonstrated. With the help of pulse spray system, precise control can be achieved and the optimized concentration can be found.

  20. Parametric Investigation of Si1-xGex/Si Multiple Quantum Well Growth

    NASA Astrophysics Data System (ADS)

    Thompson, Phillip; Godbey, David; Hobart, Karl; Glaser, Evan; Kennedy, Thomas; Twigg, Mark; Simons, David

    1994-04-01

    Si0.8Ge0.2/Si multiple quantum wells (3 nm/30 nm) have been grown by molecular beam epitaxy and have been characterized using photoluminescence (PL), secondary ion mass spectrometry, and transmission electron microscopy. A parametric investigation relating the growth conditions to the PL was carried out. The existence of phonon-resolved band-edge PL appears to be strongly related to the background impurity concentration. The connection between phonon-resolved band-edge PL and higher substrate growth temperatures is probably due to the temperature-dependent incorporation of impurities. In the as-grown samples a correlation of the broad PL with platelet density in the quantum wells was observed. The broad PL may be associated with Cr at the platelets since a high temperature ( 710° C) anneal extinguished the broad PL and caused a reduction in the Cr found in the quantum wells, but had no effect on the platelet density.

  1. Code-division multiple-access multiuser demodulator by using quantum fluctuations.

    PubMed

    Otsubo, Yosuke; Inoue, Jun-Ichi; Nagata, Kenji; Okada, Masato

    2014-07-01

    We examine the average-case performance of a code-division multiple-access (CDMA) multiuser demodulator in which quantum fluctuations are utilized to demodulate the original message within the context of Bayesian inference. The quantum fluctuations are built into the system as a transverse field in the infinite-range Ising spin glass model. We evaluate the performance measurements by using statistical mechanics. We confirm that the CDMA multiuser modulator using quantum fluctuations achieve roughly the same performance as the conventional CDMA multiuser modulator through thermal fluctuations on average. We also find that the relationship between the quality of the original information retrieval and the amplitude of the transverse field is somehow a "universal feature" in typical probabilistic information processing, viz., in image restoration, error-correcting codes, and CDMA multiuser demodulation.

  2. Interfacial design and structure of protein/polymer films on oxidized AlGaN surfaces

    NASA Astrophysics Data System (ADS)

    Gupta, Samit K.; Wu, Hao-Hsuan; Kwak, Kwang J.; Casal, Patricia; Nicholson, Theodore R., III; Wen, Xuejin; Anisha, R.; Bhushan, Bharat; Berger, Paul R.; Lu, Wu; Brillson, Leonard J.; Lee, Stephen Craig

    2011-01-01

    Protein detection using biologically or immunologically modified field-effect transistors (bio/immunoFETs) depends on the nanoscale structure of the polymer/protein film at sensor interfaces (Bhushan 2010 Springer Handbook of Nanotechnology 3rd edn (Heidelberg: Springer); Gupta et al 2010 The effect of interface modification on bioFET sensitivity, submitted). AlGaN-based HFETs (heterojunction FETs) are attractive platforms for many protein sensing applications due to their electrical stability in high osmolarity aqueous environments and favourable current drive capabilities. However, interfacial polymer/protein films on AlGaN, though critical to HFET protein sensor function, have not yet been fully characterized. These interfacial films are typically comprised of protein-polymer films, in which analyte-specific receptors are tethered to the sensing surface with a heterobifunctional linker molecule (often a silane molecule). Here we provide insight into the structure and tribology of silane interfaces composed of one of two different silane monomers deposited on oxidized AlGaN, and other metal oxide surfaces. We demonstrate distinct morphologies and wear properties for the interfacial films, attributable to the specific chemistries of the silane monomers used in the films. For each specific silane monomer, film morphologies and wear are broadly consistent on multiple oxide surfaces. Differences in interfacial film morphology also drive improvements in sensitivity of the underlying HFET (coincident with, though not necessarily caused by, differences in interfacial film thickness). We present a testable model of the hypothetical differential interfacial depth distribution of protein analytes on FET sensor interfaces with distinct morphologies. Empirical validation of this model may rationalize the actual behaviour of planar immunoFETs, which has been shown to be contrary to expectations of bio/immunoFET behaviour prevalent in the literature for the last 20 years

  3. Polyad quantum numbers and multiple resonances in anharmonic vibrational studies of polyatomic molecules.

    PubMed

    Krasnoshchekov, Sergey V; Stepanov, Nikolay F

    2013-11-14

    In the theory of anharmonic vibrations of a polyatomic molecule, mixing the zero-order vibrational states due to cubic, quartic and higher-order terms in the potential energy expansion leads to the appearance of more-or-less isolated blocks of states (also called polyads), connected through multiple resonances. Such polyads of states can be characterized by a common secondary integer quantum number. This polyad quantum number is defined as a linear combination of the zero-order vibrational quantum numbers, attributed to normal modes, multiplied by non-negative integer polyad coefficients, which are subject to definition for any particular molecule. According to Kellman's method [J. Chem. Phys. 93, 6630 (1990)], the corresponding formalism can be conveniently described using vector algebra. In the present work, a systematic consideration of polyad quantum numbers is given in the framework of the canonical Van Vleck perturbation theory (CVPT) and its numerical-analytic operator implementation for reducing the Hamiltonian to the quasi-diagonal form, earlier developed by the authors. It is shown that CVPT provides a convenient method for the systematic identification of essential resonances and the definition of a polyad quantum number. The method presented is generally suitable for molecules of significant size and complexity, as illustrated by several examples of molecules up to six atoms. The polyad quantum number technique is very useful for assembling comprehensive basis sets for the matrix representation of the Hamiltonian after removal of all non-resonance terms by CVPT. In addition, the classification of anharmonic energy levels according to their polyad quantum numbers provides an additional means for the interpretation of observed vibrational spectra.

  4. High-resolution absorptive intermolecular multiple-quantum coherence NMR spectroscopy under inhomogeneous fields

    NASA Astrophysics Data System (ADS)

    Lin, Meijin; Lin, Yanqin; Chen, Xi; Cai, Shuhui; Chen, Zhong

    2012-01-01

    Intermolecular multiple-quantum coherence (iMQC) is capable of improving NMR spectral resolution using a 2D shearing manipulation method. A pulse sequence termed CT-iDH, which combines intermolecular double-quantum filter (iDQF) with a modified constant-time (CT) scheme, is designed to achieve fast acquisition of high-resolution intermolecular zero-quantum coherences (iZQCs) and intermolecular double-quantum coherences (iDQCs) spectra without strong coupling artifacts. Furthermore, double-absorption lineshapes are first realized in 2D intermolecular multi-quantum coherences (iMQCs) spectra under inhomogeneous fields through a combination of iZQC and iDQC signals to double the resolution without loss of sensitivity. Theoretically the spectral linewidth can be further reduced by half compared to original iMQC high-resolution spectra. Several experiments were performed to test the feasibility of the new method and the improvements are evaluated quantitatively. The study suggests potential applications for in vivo spectroscopy.

  5. Reversed polarized emission in highly strained a -plane GaN/AlN multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Mata, R.; Cros, A.; Budagosky, J. A.; Molina-Sánchez, A.; Garro, N.; García-Cristóbal, A.; Renard, J.; Founta, S.; Gayral, B.; Bellet-Amalric, E.; Bougerol, C.; Daudin, B.

    2010-09-01

    The polarization of the emission from a set of highly strained a -plane GaN/AlN multiple quantum wells of varying well widths has been studied. A single photoluminescence peak is observed that shifts to higher energies as the quantum well thickness decreases due to quantum confinement. The emitted light is linearly polarized. For the thinnest samples the preferential polarization direction is perpendicular to the wurtzite c axis with a degree of polarization that decreases with increasing well width. However, for the thickest well the preferred polarization direction is parallel to the c axis. Raman scattering, x-ray diffraction, and transmission electron microscopy studies have been performed to determine the three components of the strain tensor in the active region. Moreover, the experimental results have been compared with the strain values computed by means of a model based on the elastic continuum theory. A high anisotropic compressive in-plane strain has been found, namely, -0.6% and -2.8% along the in-plane directions [11¯00] and [0001], respectively, for the thickest quantum well. The oscillator strength of the lowest optical transition has been calculated within the framework of a multiband envelope function model for various quantum well widths and strain values. The influence of confinement and strain on the degree of polarization is discussed and compared with experiment considering various sets of material parameters.

  6. Towards an understanding of hot carrier cooling mechanisms in multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Conibeer, Gavin; Zhang, Yi; Bremner, Stephen P.; Shrestha, Santosh

    2017-09-01

    Multiple quantum wells have been shown significantly reduced hot carrier cooling rates compared to bulk material and are thus a promising candidate for hot carrier solar cell absorbers. However, the mechanism(s) by which hot carrier cooling is restricted is not clear. A systematic study of carrier cooling rates in GaAs/AlAs multiple quantum wells (MQWs) with either varying barrier thickness or varying well thickness is presented in this paper. These allow an investigation as to whether the mechanisms of either a modification in hot carrier diffusion or a localisation of phonons emitted by hot carriers are primarily responsible for reduced carrier cooling rates. With the conclusion that for the structures investigated the situation is rather more complex with both carrier mobility to modify hot carrier diffusion, different diffusion rates for electrons and holes and reflection and localisation of phonons to enhance phonon bottleneck all playing their parts in modulating phonon reabsorption and hot carrier behaviour.

  7. Entropic Uncertainty Relation and Information Exclusion Relation for multiple measurements in the presence of quantum memory.

    PubMed

    Zhang, Jun; Zhang, Yang; Yu, Chang-shui

    2015-06-29

    The Heisenberg uncertainty principle shows that no one can specify the values of the non-commuting canonically conjugated variables simultaneously. However, the uncertainty relation is usually applied to two incompatible measurements. We present tighter bounds on both entropic uncertainty relation and information exclusion relation for multiple measurements in the presence of quantum memory. As applications, three incompatible measurements on Werner state and Horodecki's bound entangled state are investigated in details.

  8. Multiple-quantum NMR studies of spin clusters in liquid crystals and zeolites

    SciTech Connect

    Pearson, J. . Dept. of Chemistry Lawrence Berkeley Lab., CA )

    1991-07-01

    This work will describe the use of MQ NMR to study spin clusters in anisotropic materials. A technique known as multiple-quantum spin counting was used to determine average spin cluster sizes liquid crystalline materials and in faujacitic zeolites containing aromatic hydrocarbons. The first half of the thesis will describe MQ NMR and the MQ spin counting technique, and the second half of the thesis will describe the actual experiments and their results.

  9. Entropic Uncertainty Relation and Information Exclusion Relation for multiple measurements in the presence of quantum memory

    NASA Astrophysics Data System (ADS)

    Zhang, Jun; Zhang, Yang; Yu, Chang-Shui

    2015-06-01

    The Heisenberg uncertainty principle shows that no one can specify the values of the non-commuting canonically conjugated variables simultaneously. However, the uncertainty relation is usually applied to two incompatible measurements. We present tighter bounds on both entropic uncertainty relation and information exclusion relation for multiple measurements in the presence of quantum memory. As applications, three incompatible measurements on Werner state and Horodecki’s bound entangled state are investigated in details.

  10. Resonant enhancement of the photocurrent in multiple-quantum-well photovoltaic devices

    SciTech Connect

    Raisky, O.Y.; Wang, W.B.; Alfano, R.R.; Reynolds, C.L. Jr.; Stampone, D.V.; Focht, M.W.

    1999-01-01

    Sequential resonant tunneling is proposed to enhance the photocurrent and reduce recombination losses in photovoltaic devices based on multiple-quantum-well (MQW) heterostructures. An InGaAsP/InP MQW {ital p{endash}i{endash}n} diode with built-in sequential resonant tunneling has been fabricated, and demonstrates an increase in the photocurrent and reduction in photoluminescence intensity. These effects are attributed to the resonance tunneling effect. {copyright} {ital 1999 American Institute of Physics.}

  11. Homo- and Heteronuclear Multiple-Quantum Filters for Measurement of NMR Isotope Shifts

    NASA Astrophysics Data System (ADS)

    Wooten, E. W.; Dua, R. K.; Dotson, G. D.; Woodard, R. W.

    The measurement of NMR isotope shifts as mechanistic probes can be complicated by mixtures of isotopomers. Homo- and heteronuclear NMR techniques based on multiple-quantum filtration are presented and shown to be a useful aid in measuring such shifts. The effects of 1H/ 2H substitution and 16O/ 18O substitution on the nuclear shielding of 1H, 13C, and 31P in a multiply labeled phosphoenolpyruvate are measured and interpreted qualitatively in terms of their rovibrational origins.

  12. Transmission coefficients for chemical reactions with multiple states: role of quantum decoherence.

    PubMed

    de la Lande, Aurélien; Řezáč, Jan; Lévy, Bernard; Sanders, Barry C; Salahub, Dennis R

    2011-03-23

    Transition-state theory (TST) is a widely accepted paradigm for rationalizing the kinetics of chemical reactions involving one potential energy surface (PES). Multiple PES reaction rate constants can also be estimated within semiclassical approaches provided the hopping probability between the quantum states is taken into account when determining the transmission coefficient. In the Marcus theory of electron transfer, this hopping probability was historically calculated with models such as Landau-Zener theory. Although the hopping probability is intimately related to the question of the transition from the fully quantum to the semiclassical description, this issue is not adequately handled in physicochemical models commonly in use. In particular, quantum nuclear effects such as decoherence or dephasing are not present in the rate constant expressions. Retaining the convenient semiclassical picture, we include these effects through the introduction of a phenomenological quantum decoherence function. A simple modification to the usual TST rate constant expression is proposed: in addition to the electronic coupling, a characteristic decoherence time τ(dec) now also appears as a key parameter of the rate constant. This new parameter captures the idea that molecular systems, although intrinsically obeying quantum mechanical laws, behave semiclassically after a finite but nonzero amount of time (τ(dec)). This new degree of freedom allows a fresh look at the underlying physics of chemical reactions involving more than one quantum state. The ability of the proposed formula to describe the main physical lines of the phenomenon is confirmed by comparison with results obtained from density functional theory molecular dynamics simulations for a triplet to singlet transition within a copper dioxygen adduct relevant to the question of dioxygen activation by copper monooxygenases.

  13. Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design

    NASA Astrophysics Data System (ADS)

    Wu, Feng; Sun, Haiding; AJia, Idris A.; Roqan, Iman S.; Zhang, Daliang; Dai, Jiangnan; Chen, Changqing; Feng, Zhe Chuan; Li, Xiaohang

    2017-06-01

    Significant internal quantum efficiency (IQE) enhancement of GaN/AlGaN multiple quantum wells (MQWs) emitting at ~350 nm was achieved via a step quantum well (QW) structure design. The MQW structures were grown on AlGaN/AlN/sapphire templates by metal-organic chemical vapor deposition (MOCVD). High resolution x-ray diffraction (HR-XRD) and scanning transmission electron microscopy (STEM) were performed, showing sharp interface of the MQWs. Weak beam dark field imaging was conducted, indicating a similar dislocation density of the investigated MQWs samples. The IQE of GaN/AlGaN MQWs was estimated by temperature dependent photoluminescence (TDPL). An IQE enhancement of about two times was observed for the GaN/AlGaN step QW structure, compared with conventional QW structure. Based on the theoretical calculation, this IQE enhancement was attributed to the suppressed polarization-induced field, and thus the improved electron-hole wave-function overlap in the step QW.

  14. Electric field dependent Electroreflectance of GaAs/AlGaAs multiple quantum well Bragg structure at second quantum state

    NASA Astrophysics Data System (ADS)

    Nakarmi, Mim; Shakya, Naresh; Chaldyshev, Vladimir

    Electroreflectance Spectroscopy was employed to study the effect of electric field on the excitonic transitions in a GaAs/AlGaAs multiple quantum well (MQW) Bragg structure. The sample used in this experiment consists of 60 periods of quantum well structures with GaAs well layer (~13 nm) and AlGaAs barrier layer (~94 nm), grown by molecular beam expitaxy on a semi-insulating GaAs substrate. The sample structure was designed to coincide the Bragg resonance peak with the x(e2-hh2) exciton transitions. We observed a significant enhancement of excitonic feature around the x(e2-hh2) exciton transition due to the double resonance along with the sharp features of x(e1-hh1) and x(e1-lh1) ground state exciton transitions by tuning the angle of incidence of the light. We will present the results on electric field dependent electroreflectance measurements of this structure and discuss the effect of electric field on the first and second energy states.

  15. Internal quantum efficiency improvement of InGaN/GaN multiple quantum well green light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Zhou, Q.; Xu, M.; Wang, H.

    2016-01-01

    In recent years, GaN-based light-emitting diode (LED) has been widely used in various applications, such as RGB lighting system, full-colour display and visible-light communication. However, the internal quantum efficiency (IQE) of green LEDs is significantly lower than that of other visible spectrum LED. This phenomenon is called "green gap". This paper briefly describes the physical mechanism of the low IQE for InGaN/GaN multiple quantum well (MQW) green LED at first. The IQE of green LED is limited by the defects and the internal electric field in MQW. Subsequently, we discuss the recent progress in improving the IQE of green LED in detail. These strategies can be divided into two categories. Some of these methods were proposed to enhance crystal quality of InGaN/GaN MQW with high In composition and low density of defects by modifying the growth conditions. Other methods focused on increasing electron-hole wave function overlap by eliminating the polarization effect.

  16. Polarization-induced electrical conductivity in ultra-wide band gap AlGaN alloys

    NASA Astrophysics Data System (ADS)

    Armstrong, Andrew M.; Allerman, Andrew A.

    2016-11-01

    Unintentionally doped (UID) AlGaN epilayers graded over Al compositions of 80%-90% and 80%-100% were grown by metal organic vapor phase epitaxy and were electrically characterized using contactless sheet resistance (Rsh) and capacitance-voltage (C-V) measurements. Strong electrical conductivity in the UID graded AlGaN epilayers resulted from polarization-induced doping and was verified by the low resistivity of 0.04 Ω cm for the AlGaN epilayer graded over 80%-100% Al mole fraction. A free electron concentration (n) of 4.8 × 1017 cm-3 was measured by C-V for Al compositions of 80%-100%. Average electron mobility ( μ ¯ ) was calculated from Rsh and n data for three ranges of Al composition grading, and it was found that UID AlGaN graded from 88%-96% had μ ¯ = 509 cm2/V s. The combination of very large band gap energy, high μ ¯ , and high n for UID graded AlGaN epilayers make them attractive as a building block for high voltage power electronic devices such as Schottky diodes and field effect transistors.

  17. Electrical properties of n-type AlGaN with high Si concentration

    NASA Astrophysics Data System (ADS)

    Takeda, Kunihiro; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu

    2016-05-01

    The electrical properties of Si-doped AlGaN layers (AlN molar fractions: 0.03-0.06) with the donor concentrations (N D) from 8.8 × 1017 to 4.5 × 1020 cm-3 were investigated by variable-temperature Hall effect measurement using the van der Pauw method. A minimum resistivity of 3.6 × 10-4 Ω cm was obtained for Si-doped AlGaN with a smooth surface at room temperature. We found that the activation energy of the Si donor is affected by the Coulomb interaction in the AlGaN layer with N D values from 8.8 × 1017 to 2.5 × 1020 cm-3. In several AlGaN layers, the free-electron concentration did not vary with sample temperature, as expected in the case of degeneracy. The localization of GaN in the AlGaN layer was speculated as a cause of degeneracy of samples.

  18. Comparative study of NH 4OH and HCl etching behaviours on AlGaN surfaces

    NASA Astrophysics Data System (ADS)

    Sohal, Rakesh; Dudek, Piotr; Hilt, Oliver

    2010-01-01

    A controlled AlGaN surface preparation method avails to improve the performance of GaN-based HEMT devices. A comparative investigation of chemical treatments by (1:10) NH 4OH:H 2O and (1:10) HCl:H 2O solutions for AlGaN surface preparation by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) is reported. The XPS data clearly reveal that the native oxide on AlGaN was composed of Al 2O 3, Ga 2O 3 and NO compounds. These compounds were etched off partially or completely by both the chemical treatments, namely NH 4OH or HCl solutions, independently. The HCl treatment etches out Al 2O 3 completely from native oxide unlike NH 4OH treatment. The HCl treatment results in larger amount of carbon segregation on AlGaN surfaces, however it removes all oxides' compounds faster than NH 4OH treatment. The AFM results reveal the improvement of surface morphology by both the chemical treatments leading to the surface roughness RMS values of 0.24 nm and 0.21 nm for NH 4OH and HCl treated AlGaN layers, respectively.

  19. Piezoelectric domains in the AlGaN hexagonal microrods: Effect of crystal orientations

    NASA Astrophysics Data System (ADS)

    Sivadasan, A. K.; Mangamma, G.; Bera, Santanu; Kamruddin, M.; Dhara, Sandip

    2016-05-01

    Presently, the piezoelectric materials are finding tremendous applications in the micro-mechanical actuators, sensors, and self-powered devices. In this context, the studies pertaining to piezoelectric properties of materials in the different size ranges are very important for the scientific community. The III-nitrides are exceptionally important, not only for optoelectronic but also for their piezoelectric applications. In the present study, we synthesized AlGaN via self-catalytic vapor-solid mechanism by atmospheric pressure chemical vapor deposition technique on AlN base layer over intrinsic Si(100) substrate. The growth process is substantiated using X-ray diffraction and X-ray photoelectron spectroscopy. The Raman and photoluminescence studies reveal the formation of AlGaN microrods in the wurtzite phase and ensure the high optical quality of the crystalline material. The single crystalline, direct wide band gap and hexagonally shaped AlGaN microrods are studied for understanding the behavior of the crystallites under the application of constant external electric field using the piezoresponse force microscopy. The present study is mainly focused on understanding the behavior of induced polarization for the determination of piezoelectric coefficient of AlGaN microrod along the c-axis and imaging of piezoelectric domains in the sample originating because of the angular inclination of AlGaN microrods with respect to its AlN base layers.

  20. Piezoelectric domains in the AlGaN hexagonal microrods: Effect of crystal orientations

    SciTech Connect

    Sivadasan, A. K. E-mail: gm@igcar.gov.in Dhara, Sandip E-mail: gm@igcar.gov.in; Mangamma, G. E-mail: gm@igcar.gov.in Kamruddin, M.; Bera, Santanu

    2016-05-07

    Presently, the piezoelectric materials are finding tremendous applications in the micro-mechanical actuators, sensors, and self-powered devices. In this context, the studies pertaining to piezoelectric properties of materials in the different size ranges are very important for the scientific community. The III-nitrides are exceptionally important, not only for optoelectronic but also for their piezoelectric applications. In the present study, we synthesized AlGaN via self-catalytic vapor-solid mechanism by atmospheric pressure chemical vapor deposition technique on AlN base layer over intrinsic Si(100) substrate. The growth process is substantiated using X-ray diffraction and X-ray photoelectron spectroscopy. The Raman and photoluminescence studies reveal the formation of AlGaN microrods in the wurtzite phase and ensure the high optical quality of the crystalline material. The single crystalline, direct wide band gap and hexagonally shaped AlGaN microrods are studied for understanding the behavior of the crystallites under the application of constant external electric field using the piezoresponse force microscopy. The present study is mainly focused on understanding the behavior of induced polarization for the determination of piezoelectric coefficient of AlGaN microrod along the c-axis and imaging of piezoelectric domains in the sample originating because of the angular inclination of AlGaN microrods with respect to its AlN base layers.

  1. Third generation photovoltaics based on multiple exciton generation in quantum confined semiconductors.

    PubMed

    Beard, Matthew C; Luther, Joseph M; Semonin, Octavi E; Nozik, Arthur J

    2013-06-18

    Improving the primary photoconversion process in a photovoltaiccell by utilizing the excess energy that is otherwise lost as heat can lead to an increase in the overall power conversion efficiency (PCE). Semiconductor nanocrystals (NCs) with at least one dimension small enough to produce quantum confinement effects provide new ways of controlling energy flow not achievable in thin film or bulk semiconductors. Researchers have developed various strategies to incorporate these novel structures into suitable solar conversion systems. Some of these methods could increase the PCE past the Shockley-Queisser (SQ) limit of ∼33%, making them viable "third generation photovoltaic" (TGPV) cell architectures. Surpassing the SQ limit for single junction solar cells presents both a scientific and a technological challenge, and the use of semiconductor NCs to enhance the primary photoconversion process offers a promising potential solution. The NCs are synthesized via solution phase chemical reactions producing stable colloidal solutions, where the reaction conditions can be modified to produce a variety of shapes, compositions, and structures. The confinement of the semiconductor NC in one dimension produces quantum films, wells, or discs. Two-dimensional confinement leads to quantum wires or rods (QRs), and quantum dots (QDs) are three-dimensionally confined NCs. The process of multiple exciton generation (MEG) converts a high-energy photon into multiple electron-hole pairs. Although many studies have demonstrated that MEG is enhanced in QDs compared with bulk semiconductors, these studies have either used ultrafast spectroscopy to measure the photon-to-exciton quantum yields (QYs) or theoretical calculations. Implementing MEG in a working solar cell has been an ongoing challenge. In this Account, we discuss the status of MEG research and strategies towards implementing MEG in working solar cells. Recently we showed an external quantum efficiency for photocurrent of greater

  2. Ultrafast Optical Studies of Multiple Exciton Generation in Lead Chalcogenide Quantum Dots

    NASA Astrophysics Data System (ADS)

    Midgett, Aaron G.

    2011-12-01

    Providing affordable, clean energy is one of the major challenges facing society today, and one of the promising solutions is third generation solar energy conversion. Present day, first and second-generation solar cells can at most convert each absorbed photon into a single electron hole pair, thereby establishing a theoretical limit to the power conversion efficiency. The process of multiple exciton generation (MEG) in semiconductor quantum dots increases that theoretical efficiency from 33% to 42% by utilizing the excess energy of high energy photons that is otherwise wasted as heat to excite a second electron-hole pair, thereby boosting the potential photocurrent. This thesis explores the benefits of MEG in quantum confined systems and shows that quantum dots are more efficient at generating multiple excitons from a single photon than bulk semiconductors. The variations in optical measurements of MEG have raised skepticism and brought into question the validity of these experiments. The two important questions that this thesis attempts to address are (1) what are the enhanced QYs in isolated PbSe QDs and (2) does quantum confinement enhance MEG over bulk semiconductors. Experimental variations in the enhanced QYs are partially explained by the production of a long-lived photocharged state that increases the apparent photon-to-exciton QYs. A procedure is detailed that decreases the possibility of producing this charged state. By studying the production of these states, conditions are found that minimize their effect and produce less variation in the reported QYs. Variations in the MEG efficiency were studied in films of chemically treated PbSe quantum dots where a different mechanism was responsible for an apparent decrease of the measured QYs. Finally, for the first time, a quantum dot size-dependence in the MEG efficiency was found in colloidal PbSe, PbS, and PbSxSe1-x quantum dot solutions and is attributed to the increased Coulomb interaction in materials

  3. Multiple quantum phase transitions and superconductivity in Ce-based heavy fermions.

    PubMed

    Weng, Z F; Smidman, M; Jiao, L; Lu, Xin; Yuan, H Q

    2016-09-01

    Heavy fermions have served as prototype examples of strongly-correlated electron systems. The occurrence of unconventional superconductivity in close proximity to the electronic instabilities associated with various degrees of freedom points to an intricate relationship between superconductivity and other electronic states, which is unique but also shares some common features with high temperature superconductivity. The magnetic order in heavy fermion compounds can be continuously suppressed by tuning external parameters to a quantum critical point, and the role of quantum criticality in determining the properties of heavy fermion systems is an important unresolved issue. Here we review the recent progress of studies on Ce based heavy fermion superconductors, with an emphasis on the superconductivity emerging on the edge of magnetic and charge instabilities as well as the quantum phase transitions which occur by tuning different parameters, such as pressure, magnetic field and doping. We discuss systems where multiple quantum critical points occur and whether they can be classified in a unified manner, in particular in terms of the evolution of the Fermi surface topology.

  4. Analyses and improvement of a broadcasting multiple blind signature scheme based on quantum GHZ entanglement

    NASA Astrophysics Data System (ADS)

    Zhang, Wei; Qiu, Daowen; Zou, Xiangfu; Mateus, Paulo

    2017-06-01

    A broadcasting multiple blind signature scheme based on quantum GHZ entanglement has been presented recently. It is said that the scheme's unconditional security is guaranteed by adopting quantum key preparation, quantum encryption algorithm and quantum entanglement. In this paper, we prove that each signatory can get the signed message just by an intercept-resend attack. Then, we show there still exist some participant attacks and external attacks. Specifically, we verify the message sender Alice can impersonate each signatory to sign the message at will, and so is the signature collector Charlie. Also, we demonstrate that the receiver Bob can forge the signature successfully, and with respect to the external attacks, the eavesdropper Eve can modify the signature at random. Besides, we discover Eve can change the signed message at random, and Eve can impersonate Alice as the message sender without being discovered. In particular, we propose an improved scheme based on the original one and show that it is secure against not only the attacks mentioned above but also some collusion attacks.

  5. Characterization of Pairwise Correlations from Multiple Quantum Correlated Beams Generated from Cascaded Four-Wave Mixing Processes

    PubMed Central

    Wang, Hailong; Cao, Leiming; Jing, Jietai

    2017-01-01

    We theoretically characterize the performance of the pairwise correlations (PCs) from multiple quantum correlated beams based on the cascaded four-wave mixing (FWM) processes. The presence of the PCs with quantum corre- lation in these systems can be verified by calculating the degree of intensity difference squeezing for any pair of all the output fields. The quantum correlation characteristics of all the PCs under different cascaded schemes are also discussed in detail and the repulsion effect between PCs in these cascaded FWM processes is theoretically predicted. Our results open the way for the classification and application of quantum states generated from the cascaded FWM processes. PMID:28071759

  6. Influence of metalorganic precursors flow interruption timing on green InGaN multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Dmukauskas, M.; Kadys, A.; Malinauskas, T.; Grinys, T.; Reklaitis, I.; Badokas, K.; Skapas, M.; Tomašiūnas, R.; Dobrovolskas, D.; Stanionytė, S.; Pietzonka, I.; Strassburg, M.; Lugauer, H.-J.

    2016-12-01

    The paper reports on fully strained green light emitting InGaN/GaN multiple quantum wells, grown by metalorganic vapor phase epitaxy, using metal precursor multiple flow interruptions during InGaN quantum well growth. Optimization of the interruption timing (pulse t 1  =  20 s, pause t 2  =  12 s) lets us reach the integrated photoluminescence enhancement for the growth at temperature 780 ºC. The enhancement, as a function of pause duration, appeared to be pulse duration dependent: a lower enhancement can be achieved using shorter pulses with optimized relatively shorter pauses. Indium evaporation during the interruption time was interpreted as the main issue to keep the layers intact. Quantum wells revealing the highest photoluminescence enhancement were inspected for interface quality, layer thickness, growth speed, strain, surface morphology and roughness by TEM, XRD and AFM techniques, and compared with the one grown in the conventional mode.

  7. Enhancement of spectral editing efficacy of multiple quantum filters in in vivo proton magnetic resonance spectroscopy

    NASA Astrophysics Data System (ADS)

    Kim, Hyeonjin; Thompson, Richard B.; Allen, Peter S.

    2012-10-01

    The performance of multiple quantum filters (MQFs) can be disappointing when the background signal also arises from coupled spins. Moreover, at 3.0 T and even higher fields the majority of the spin systems of key brain metabolites fall into the strong-coupling regime. In this manuscript we address comprehensively, the importance of the phase of the multiple quantum coherence-generating pulse (MQ-pulse) in the design of MQFs, using both product operator and numerical analysis, in both zero and double quantum filter designs. The theoretical analyses were experimentally validated with the examples of myo-inositol editing and the separation of glutamate from glutamine. The results demonstrate that the phase of the MQ-pulse per se provides an additional spectral discrimination mechanism based on the degree of coupling beyond the conventional level-of-coherence approach of MQFs. To obtain the best spectral discrimination of strongly-coupled spin systems, therefore, the phase of the MQ-pulse must be included in the portfolio of the sequence parameters to be optimized.

  8. Enhancement of spectral editing efficacy of multiple quantum filters in in vivo proton magnetic resonance spectroscopy.

    PubMed

    Kim, Hyeonjin; Thompson, Richard B; Allen, Peter S

    2012-10-01

    The performance of multiple quantum filters (MQFs) can be disappointing when the background signal also arises from coupled spins. Moreover, at 3.0 T and even higher fields the majority of the spin systems of key brain metabolites fall into the strong-coupling regime. In this manuscript we address comprehensively, the importance of the phase of the multiple quantum coherence-generating pulse (MQ-pulse) in the design of MQFs, using both product operator and numerical analysis, in both zero and double quantum filter designs. The theoretical analyses were experimentally validated with the examples of myo-inositol editing and the separation of glutamate from glutamine. The results demonstrate that the phase of the MQ-pulse per se provides an additional spectral discrimination mechanism based on the degree of coupling beyond the conventional level-of-coherence approach of MQFs. To obtain the best spectral discrimination of strongly-coupled spin systems, therefore, the phase of the MQ-pulse must be included in the portfolio of the sequence parameters to be optimized.

  9. Polarizabilities of Impurity Doped Quantum Dots Under Pulsed Field: Role of Multiplicative White Noise

    NASA Astrophysics Data System (ADS)

    Saha, Surajit; Ghosh, Manas

    2016-02-01

    We perform a rigorous analysis of the profiles of a few diagonal and off-diagonal components of linear ( α xx , α yy , α xy , and α yx ), first nonlinear ( β xxx , β yyy , β xyy , and β yxx ), and second nonlinear ( γ xxxx , γ yyyy , γ xxyy , and γ yyxx ) polarizabilities of quantum dots exposed to an external pulsed field. Simultaneous presence of multiplicative white noise has also been taken into account. The quantum dot contains a dopant represented by a Gaussian potential. The number of pulse and the dopant location have been found to fabricate the said profiles through their interplay. Moreover, a variation in the noise strength also contributes evidently in designing the profiles of above polarizability components. In general, the off-diagonal components have been found to be somewhat more responsive to a variation of noise strength. However, we have found some exception to the above fact for the off-diagonal β yxx component. The study projects some pathways of achieving stable, enhanced, and often maximized output of linear and nonlinear polarizabilities of doped quantum dots driven by multiplicative noise.

  10. The self-catalytic and catalyst assisted CVD growth of high optical quality AlGaN nanowires

    NASA Astrophysics Data System (ADS)

    Sivadasan, A. K.; Parida, Santanu; Dhara, Sandip

    2017-05-01

    The wide and direct band gap AlGaN nanowires (NWs) are synthesized using chemical vapor deposition technique at a growth temperature of 915 °C using self catalytic vapor-solid (VS) as well as catalyst assisted vapor-liquid-solid (VLS) mechanism. Vibrational studies using Raman spectroscopy confirmed the formation of wurtzite phase of AlGaN and show the two-mode phonon behavior of the random alloy formation. Room temperature photoluminescence (PL) studies of AlGaN grown via self catalytic approach further supports the formation of AlGaN alloy with free exciton emission energy higher than the reported band gap for GaN. Relatively defect free PL emission achieved for the AlGaN NWs grown via catalyst assisted VLS mechanism by modulating the Au nanoparticles distribution on the Si(100) substrate.

  11. Determination Of The Third Order Nonlinearity As A Function Of Quantum Well Width In Gaas/A1Gaas Multiple Quantum Wells

    NASA Astrophysics Data System (ADS)

    Derstine, M. W.; Grider, D. E.; Lehman, J. A.; Ruden, P. P.; Peyghambarian, Nasser

    1988-05-01

    We present a study of the dependence of the magnitude of optical nonlinearities of GaAs/AlGaAs multiple quantum wells on quantum well thickness. Using four-wave mixing and nonlinear absorption measurements the refractive nonlinearity was determined in 17 samples grown by MOCVD and MBE. We find a small variation (less tban a factor of three) in the change in refractive index per photoexcited carrier for well sizes between 50 A and 300 A. or bulk GaAs.

  12. Optimization of carrier multiplication for more effcient solar cells: the case of Sn quantum dots.

    PubMed

    Allan, Guy; Delerue, Christophe

    2011-09-27

    We present calculations of impact ionization rates, carrier multiplication yields, and solar-power conversion efficiencies in solar cells based on quantum dots (QDs) of a semimetal, α-Sn. Using these results and previous ones on PbSe and PbS QDs, we discuss a strategy to select QDs with the highest carrier multiplication rate for more efficient solar cells. We suggest using QDs of materials with a close to zero band gap and a high multiplicity of the bands in order to favor the relaxation of photoexcited carriers by impact ionization. Even in that case, the improvement of the maximum solar-power conversion efficiency appears to be a challenging task.

  13. Electroluminescence property improvement by adjusting quantum wells' position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes

    NASA Astrophysics Data System (ADS)

    Chen, P.; Zhao, D. G.; Jiang, D. S.; Long, H.; Li, M.; Yang, J.; Zhu, J. J.; Liu, Z. S.; Li, X. J.; Liu, W.; Li, X.; Liang, F.; Liu, J. P.; Zhang, B. S.; Yang, H.

    2017-03-01

    The hole distribution and electroluminescence property improvement by adjusting the relative position between quantum wells and p-doped region in InGaN/GaN multiple-quantum-well structures are experimentally and theoretically investigated. Five designed samples with different barrier layer parameters of multiple-quantum-well structure are grown by MOCVD and then fabricated into devices. The electroluminescence properties of these samples are measured and compared. It is found that the output electroluminescence intensity of samples is enhanced if the position of quantum wells shifts towards p-side, while the output power is reduced if their position is shifted towards the n-side. The theoretical calculation of characteristics of these devices using the simulation program APSYS agrees well with the experimental data, illustrating that the effect of relative position between p-doped region and quantum wells on the improvement of hole distribution and electroluminescence performance is significant, especially for InGaN/GaN multiple-quantum-well devices operated under high injection condition.

  14. Multiple exciton generation in films of electronically coupled PbSe quantum dots.

    PubMed

    Luther, Joseph M; Beard, Matthew C; Song, Qing; Law, Matt; Ellingson, Randy J; Nozik, Arthur J

    2007-06-01

    We study multiple exciton generation (MEG) in electronically coupled films of PbSe quantum dots (QDs) employing ultrafast time-resolved transient absorption spectroscopy. We demonstrate that the MEG efficiency in PbSe does not decrease when the QDs are treated with hydrazine, which has been shown to greatly enhance carrier transport in PbSe QD films by decreasing the interdot distance. The quantum yield is measured and compared to previously reported values for electronically isolated QDs suspended in organic solvents at approximately 4 and 4.5 times the effective band gap. A slightly modified analysis is applied to extract the MEG efficiency and the absorption cross section of each sample at the pump wavelength. We compare the absorption cross sections of our samples to that of bulk PbSe. We find that both the biexciton lifetime and the absorption cross section increase in films relative to isolated QDs in solution.

  15. Demonstration of InGaN-based orange LEDs with hybrid multiple-quantum-wells structure

    NASA Astrophysics Data System (ADS)

    Iida, Daisuke; Niwa, Kazumasa; Kamiyama, Satoshi; Ohkawa, Kazuhiro

    2016-11-01

    We demonstrate the effectiveness of a hybrid multiple-quantum-wells (MQWs) structure in InGaN-based orange light-emitting diodes (LEDs) grown by metalorganic vapor phase epitaxy. The hybrid MQWs-LED is composed of orange InGaN double QWs and a blue-green InGaN single QW. Using the hybrid MQWs structure, the orange LEDs exhibited electroluminescence spectra with narrow full widths at half maximum of 51 nm at 20 mA. The light output power and external quantum efficiency of the InGaN-based orange LEDs were 0.23 mW and 0.6%, respectively, at 20 mA.

  16. Engineering Efficiency Droop in InGaN/GaN Multiple Quantum Well LEDs

    NASA Astrophysics Data System (ADS)

    Puttaswamy, Yashvanth; Sundaresan, Sasi; Yalavarthi, Krishna; Ahmed, Shaikh

    2012-02-01

    In this work, we address the technologically important issue of efficiency droop pronounced in InGaN/GaN multiple quantum well (QW) LEDs. A two-fold modeling approach is employed where: 1) the NEMO 3-D tool is used to compute the atomistic strain fields and associated polarization potentials in the active region, and 2) the outputs from NEMO 3-D are then coupled to the Synopsys TCAD tool to determine the terminal electrical and optical properties of the device. Next, a series of numerical experiments are performed that mainly aims to improve the efficiency droop without compromising the internal quantum efficiency (IQE) of the device. These include:1) varying the QW thickness, 2) employing different configurations of tri-material barriers, 3) varying the molar concentration of the barrier materials, and 4) varying the doping density in the barrier region.

  17. The role of the fano resonance in multiple exciton generation in quantum dots

    NASA Astrophysics Data System (ADS)

    Oksengendler, B. L.; Marasulov, M. B.; Nikiforov, V. N.

    2016-02-01

    The phenomenon of interference between two pathways of electron transfer from the valence to the conduction band at a quantum dot is considered. The first way is the conventional "valence band-conduction band" transition, while the second is the transition via a virtual two-electron state on the Tamm level in a quantum dot (QD) followed by the Auger effect, which ejects one electron from the Tamm level to the conduction band. In the case of a coherent addition of these ionization pathways, the Fano resonance can take place, this leading to an increase in the coefficient of photon absorption. This results in increasing internal efficiency of light conversion and can provide a basis for increasing the efficiency of solar cells due to the phenomenon of multiple exciton generation.

  18. Nonequilibrium high-frequency noise and responsivity in multiple quantum well infrared photodetectors

    SciTech Connect

    Ershov, M.

    2001-06-01

    A theory of the nonequilibrium high-frequency noise and responsivity in multiple quantum well infrared photodetectors (QWIPs) is presented. The nonequilibrium regime dominates at frequencies higher than the inverse characteristic response time of the injecting contact. The nonequilibrium generation{endash}recombination (GR) noise and responsivity are determined by the fast component of the transient current (primary current) in response to impulse excitation. The nonequilibrium GR noise power and responsivity are lower than their low-frequency values due to the cutoff of the injection from the emitter at high frequencies. Analytical formulas for the noise and responsivity are obtained. These expressions are consistent with the conventional formulas of the standard model of unipolar photoconductors if the transit time across the QWIP is longer than the capture time by the quantum wells. {copyright} 2001 American Institute of Physics.

  19. Birefringence in the transparency region of GaAs/AlAs multiple quantum wells

    SciTech Connect

    Sirenko, A.A.; Etchegoin, P.; Fainstein, A.; Eberl, K.; Cardona, M.

    1999-09-01

    Birefringence measurements for in-plane propagation of light below the absorption edge in GaAs/AlAs multiple quantum wells (MQW{close_quote}s) are reported for different well/barrier widths. A remarkable drop in the low-frequency limit of the birefringence has been observed for MQW structures with small periods and ascribed to the presence of local fields. The temperature dependence of the birefringence is also studied and complementary results in InP quantum dot structures are also presented. The latter exhibit a strong resonant birefringence, which can be explained by the reduced dimensionality in the joint density of states for optical transitions in the dots. {copyright} {ital 1999} {ital The American Physical Society}

  20. Protected quantum computation with multiple resonators in ultrastrong coupling circuit QED.

    PubMed

    Nataf, Pierre; Ciuti, Cristiano

    2011-11-04

    We investigate theoretically the dynamical behavior of a qubit obtained with the two ground eigenstates of an ultrastrong coupling circuit-QED system consisting of a finite number of Josephson fluxonium atoms inductively coupled to a transmission line resonator. We show a universal set of quantum gates by using multiple transmission line resonators (each resonator represents a single qubit). We discuss the intrinsic "anisotropic" nature of noise sources for fluxonium artificial atoms. Through a master equation treatment with colored noise and many-level dynamics, we prove that, for a general class of anisotropic noise sources, the coherence time of the qubit and the fidelity of the quantum operations can be dramatically improved in an optimal regime of ultrastrong coupling, where the ground state is an entangled photonic "cat" state.

  1. Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates

    SciTech Connect

    Bryan, Zachary Bryan, Isaac; Sitar, Zlatko; Collazo, Ramón; Mita, Seiji; Tweedie, James

    2015-06-08

    Since the band ordering in AlGaN has a profound effect on the performance of UVC light emitting diodes (LEDs) and even determines the feasibility of surface emitting lasers, the polarization properties of emitted light from c-oriented AlGaN and AlGaN-based laser structures were studied over the whole composition range, as well as various strain states, quantum confinements, and carrier densities. A quantitative relationship between the theoretical valence band separation, determined using k•p theory, and the experimentally measured degree of polarization is presented. Next to composition, strain was found to have the largest influence on the degree of polarization while all other factors were practically insignificant. The lowest crossover point from the transverse electric to transverse magnetic polarized emission of 245 nm was found for structures pseudomorphically grown on AlN substrates. This finding has significant implications toward the efficiency and feasibility of surface emitting devices below this wavelength.

  2. Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

    NASA Astrophysics Data System (ADS)

    Malinverni, M.; Lamy, J.-M.; Martin, D.; Feltin, E.; Dorsaz, J.; Castiglia, A.; Rossetti, M.; Duelk, M.; Vélez, C.; Grandjean, N.

    2014-12-01

    We demonstrate state-of-the-art p-type (Al)GaN layers deposited at low temperature (740 °C) by ammonia molecular beam epitaxy (NH3-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGaN quantum well active region. Typical p-type GaN resistivities and contact resistances are 0.4 Ω cm and 5 × 10-4 Ω cm2, respectively. As a test bed, we fabricated a hybrid laser structure emitting at 400 nm combining n-type AlGaN cladding and InGaN active region grown by metal-organic vapor phase epitaxy, with the p-doped waveguide and cladding layers grown by NH3-MBE. Single-mode ridge-waveguide LD exhibits a threshold voltage as low as 4.3 V for an 800 × 2 μm2 ridge dimension and a threshold current density of ˜5 kA cm-2 in continuous wave operation. The series resistance of the device is 6 Ω and the resistivity is 1.5 Ω cm, confirming thereby the excellent electrical properties of p-type Al0.06Ga0.94N:Mg despite the low growth temperature.

  3. Botulinum toxin detection using AlGaN /GaN high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Wang, Yu-Lin; Chu, B. H.; Chen, K. H.; Chang, C. Y.; Lele, T. P.; Tseng, Y.; Pearton, S. J.; Ramage, J.; Hooten, D.; Dabiran, A.; Chow, P. P.; Ren, F.

    2008-12-01

    Antibody-functionalized, Au-gated AlGaN /GaN high electron mobility transistors (HEMTs) were used to detect botulinum toxin. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaN /GaN HEMT drain-source current showed a rapid response of less than 5s when the target toxin in a buffer was added to the antibody-immobilized surface. We could detect a range of concentrations from 1to10ng/ml. These results clearly demonstrate the promise of field-deployable electronic biological sensors based on AlGaN /GaN HEMTs for botulinum toxin detection.

  4. Scale-estimation of quantum coherent energy transport in multiple-minima systems.

    PubMed

    Farrow, Tristan; Vedral, Vlatko

    2014-07-01

    A generic and intuitive model for coherent energy transport in multiple minima systems coupled to a quantum mechanical bath is shown. Using a simple spin-boson system, we illustrate how a generic donor-acceptor system can be brought into resonance using a narrow band of vibrational modes, such that the transfer efficiency of an electron-hole pair (exciton) is made arbitrarily high. Coherent transport phenomena in nature are of renewed interest since the discovery that a photon captured by the light-harvesting complex (LHC) in photosynthetic organisms can be conveyed to a chemical reaction centre with near-perfect efficiency. Classical explanations of the transfer use stochastic diffusion to model the hopping motion of a photo-excited exciton. This accounts inadequately for the speed and efficiency of the energy transfer measured in a series of recent landmark experiments. Taking a quantum mechanical perspective can help capture the salient features of the efficient part of that transfer. To show the versatility of the model, we extend it to a multiple minima system comprising seven-sites, reminiscent of the widely studied Fenna-Matthews-Olson (FMO) light-harvesting complex. We show that an idealised transport model for multiple minima coupled to a narrow-band phonon can transport energy with arbitrarily high efficiency.

  5. Scale-estimation of quantum coherent energy transport in multiple-minima systems

    PubMed Central

    Farrow, Tristan; Vedral, Vlatko

    2014-01-01

    A generic and intuitive model for coherent energy transport in multiple minima systems coupled to a quantum mechanical bath is shown. Using a simple spin-boson system, we illustrate how a generic donor-acceptor system can be brought into resonance using a narrow band of vibrational modes, such that the transfer efficiency of an electron-hole pair (exciton) is made arbitrarily high. Coherent transport phenomena in nature are of renewed interest since the discovery that a photon captured by the light-harvesting complex (LHC) in photosynthetic organisms can be conveyed to a chemical reaction centre with near-perfect efficiency. Classical explanations of the transfer use stochastic diffusion to model the hopping motion of a photo-excited exciton. This accounts inadequately for the speed and efficiency of the energy transfer measured in a series of recent landmark experiments. Taking a quantum mechanical perspective can help capture the salient features of the efficient part of that transfer. To show the versatility of the model, we extend it to a multiple minima system comprising seven-sites, reminiscent of the widely studied Fenna-Matthews-Olson (FMO) light-harvesting complex. We show that an idealised transport model for multiple minima coupled to a narrow-band phonon can transport energy with arbitrarily high efficiency. PMID:24980547

  6. Large-Format AlGaN PIN Photodiode Arrays for UV Images

    NASA Technical Reports Server (NTRS)

    Aslam, Shahid; Franz, David

    2010-01-01

    A large-format hybridized AlGaN photodiode array with an adjustable bandwidth features stray-light control, ultralow dark-current noise to reduce cooling requirements, and much higher radiation tolerance than previous technologies. This technology reduces the size, mass, power, and cost of future ultraviolet (UV) detection instruments by using lightweight, low-voltage AlGaN detectors in a hybrid detector/multiplexer configuration. The solar-blind feature eliminates the need for additional visible light rejection and reduces the sensitivity of the system to stray light that can contaminate observations.

  7. AlGaN Channel Transistors for Power Management and Distribution

    NASA Technical Reports Server (NTRS)

    VanHove, James M.

    1996-01-01

    Contained within is the Final report of a Phase 1 SBIR program to develop AlGaN channel junction field effect transistors (JFET). The report summarizes our work to design, deposit, and fabricate JFETS using molecular beam epitaxy growth AlGaN. Nitride growth is described using a RF atomic nitrogen plasma source. Processing steps needed to fabricate the device such as ohmic source-drain contacts, reactive ion etching, gate formation, and air bride fabrication are documented. SEM photographs of fabricated power FETS are shown. Recommendations are made to continue the effort in a Phase 2 Program.

  8. Terahertz study of ultrafast carrier dynamics in InGaN/GaN multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Porte, H. P.; Turchinovich, D.; Cooke, D. G.; Jepsen, P. Uhd

    2009-11-01

    Ultrafast carrier dynamics in InGaN/GaN multiple quantum wells is measured by time-resolved terahertz spectroscopy. The built-in piezoelectric field is initially screened by photoexcited, polarized carriers, and is gradullay restored as the carriers recombine. We observe a nonexponential decay of the carrier density. Time-integrated photoluminescence spectra have shown a complete screening of the built-in piezoelectric field at high excitation fluences. We also observe that the terahertz conductivity spectra differs from simple Drude conductivity, describing the response of free carriers, and are well fitted by the Drude-Smith model.

  9. Phosphor-free white light-emitting diode with laterally distributed multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Park, Il-Kyu; Kim, Ja-Yeon; Kwon, Min-Ki; Cho, Chu-Young; Lim, Jae-Hong; Park, Seong-Ju

    2008-03-01

    A phosphor-free white light-emitting diode (LED) was fabricated with laterally distributed blue and green InGaN /GaN multiple quantum wells (MQWs) grown by a selective area growth method. Photoluminescence and electroluminescence (EL) spectra of the LED showed emission peaks corresponding to the individual blue and green MQWs. The integrated EL intensity ratio of green to blue emission varied from 2.5 to 6.5 with the injection current below 300mA, but remained constant at high injection currents above 300mA. The stability of the emission color at high currents is attributed to parallel carrier injection into both MQWs.

  10. Sensitivity Enhancement in Static Solid-State NMR Experiments VIA Single and Multiple Quantum Dipolar Coherences

    PubMed Central

    Gopinath, T.; Veglia, Gianluigi

    2012-01-01

    We present a new method to enhance the sensitivity in static solid-state NMR for a gain in signal-to-noise ratio up to 40%. This sensitivity enhancement is different from the corresponding solution NMR sensitivity enhancement schemes and is achieved by combining single and multiple quantum dipolar coherences. While this new approach is demonstrated for the PISEMA (polarization inversion spin exchange at magic angle) experiment, it can be generalized to the other separated local field experiments for solid-state NMR spectroscopy. This method will have a direct impact on solid-state NMR spectroscopy of liquid crystals as well as membrane proteins aligned in lipid membranes. PMID:19351170

  11. Sensitivity Enhancement in Multiple-Quantum NMR Experiments with CPMG Detection

    NASA Astrophysics Data System (ADS)

    Lim, Kwang Hun; Nguyen, Tuan; Mazur, Tanya; Wemmer, David E.; Pines, Alexander

    2002-07-01

    We present a modified multiple-quantum (MQ) experiment, which implements the Carr-Purcell-Meiboom-Gill (CPMG) detection scheme in the static MQ NMR experiment proposed by W. S. Warren et al. (1980, J. Chem. Phys.73, 2084-2099) and exploited further by O. N. Antzutkin and R. Tycko (1999, J. Chem. Phys.110, 2749-2752). It is demonstrated that a significant enhancement in the sensitivity can be achieved by acquiring echo trains in the MQ experiments for static powder samples. The modified scheme employing the CPMG detection was superior to the original MQ experiment, in particular for the carbonyl carbon with a very large chemical shift anisotropy.

  12. Dynamic light-matter coupling across multiple spatial dimensions in a quantum dots-in-a-well heterostructure

    SciTech Connect

    Prasankumar, Rohit P; Taylor, Antoinette J; Chow, W W; Attaluri, R S; Shenoi, R

    2009-01-01

    Semiconductor heterostructures incorporating multiple degrees of spatial confinement have recently attracted substantial interest for photonic applications. One example is the quantum dots-in-a-well (DWELL) heterostructure, consisting of zero-dimensional quantum dots embedded in a two-dimensional quantum well and surrounded by three-dimensional bulk material. This structure offers several advantages over conventional photonic devices while providing a model system for the study of light-matter interactions across multiple spatial dimensions. Here, we use ultrafast differential transmission spectroscopy2 to temporally and spectrally resolve density-dependent carrier dynamics in a DWELL heterostructure. We observe excitation-dependent shifts of the quantum dot energy levels at low densities, while at high densities we observe an anomalous induced absorption at the quantum dot excited state that is correlated to quantum well population dynamics. These studies of density-dependent light-matter interactions across multiple coupled spatial dimensions provide clues to the underlying physics governing quantum dot properties, with important implications for DWELL-based photonic devices.

  13. Degenerate ground states and multiple bifurcations in a two-dimensional q-state quantum Potts model.

    PubMed

    Dai, Yan-Wei; Cho, Sam Young; Batchelor, Murray T; Zhou, Huan-Qiang

    2014-06-01

    We numerically investigate the two-dimensional q-state quantum Potts model on the infinite square lattice by using the infinite projected entangled-pair state (iPEPS) algorithm. We show that the quantum fidelity, defined as an overlap measurement between an arbitrary reference state and the iPEPS ground state of the system, can detect q-fold degenerate ground states for the Z_{q} broken-symmetry phase. Accordingly, a multiple bifurcation of the quantum ground-state fidelity is shown to occur as the transverse magnetic field varies from the symmetry phase to the broken-symmetry phase, which means that a multiple-bifurcation point corresponds to a critical point. A (dis)continuous behavior of quantum fidelity at phase transition points characterizes a (dis)continuous phase transition. Similar to the characteristic behavior of the quantum fidelity, the magnetizations, as order parameters, obtained from the degenerate ground states exhibit multiple bifurcation at critical points. Each order parameter is also explicitly demonstrated to transform under the Z_{q} subgroup of the symmetry group of the Hamiltonian. We find that the q-state quantum Potts model on the square lattice undergoes a discontinuous (first-order) phase transition for q=3 and q=4 and a continuous phase transition for q=2 (the two-dimensional quantum transverse Ising model).

  14. Quantum confinement in semiconductor nanofilms: Optical spectra and multiple exciton generation

    NASA Astrophysics Data System (ADS)

    Khmelinskii, Igor; Makarov, Vladimir I.

    2016-04-01

    We report optical absorption and photoluminescence (PL) spectra of Si and SnO2 nanocrystalline films in the UV-vis-NIR range, featuring discrete bands resulting from transverse quantum confinement, observed in the optical spectra of nanofilms for the first time ever. The film thickness ranged from 3.9 to 12.2 nm, depending on the material. The results are interpreted within the particle-in-a-box model, with infinite walls. The calculated values of the effective electron mass are independent on the film thickness and equal to 0.17mo (Si) and 0.21mo (SnO2), with mo the mass of the free electron. The second calculated model parameter, the quantum number n of the HOMO (valence band), was also thickness-independent: 8.00 (Si) and 7.00 (SnO2). The transitions observed in absorption all start at the level n and correspond to Δn = 1, 2, 3, …. The photoluminescence bands exhibit large Stokes shifts, shifting to higher energies with increased excitation energy. In effect, nanolayers of Si, an indirect-gap semiconductor, behave as a direct-gap semiconductor, as regards the transverse-quantized level system. A prototype Si-SnO2 nanofilm photovoltaic cell demonstrated photoelectron quantum yields achieving 2.5, showing clear evidence of multiple exciton generation, for the first time ever in a working nanofilm device.

  15. Size dependence of carrier dynamics and carrier multiplication in PbS quantum dots

    NASA Astrophysics Data System (ADS)

    Nootz, Gero; Padilha, Lazaro A.; Levina, Larissa; Sukhovatkin, Vlad; Webster, Scott; Brzozowski, Lukasz; Sargent, Edward H.; Hagan, David J.; van Stryland, Eric W.

    2011-04-01

    The time dynamics of the photoexcited carriers and carrier-multiplication efficiencies in PbS quantum dots (QDs) are investigated. In particular, we report on the carrier dynamics, including carrier multiplication, as a function of QD size and compare them to the bulk value. We show that the intraband 1P→1S decay becomes faster for smaller QDs, in agreement with the absence of a phonon bottleneck. Furthermore, as the size of the QDs decreases, the energy threshold for carrier multiplication shifts from the bulk value to higher energies. However, the energy threshold shift is smaller than the band-gap shift and, therefore, for the smallest QDs, the threshold approaches 2.35 Eg, which is close to the theoretical energy conservation limit of twice the band gap. We also show that the carrier-multiplication energy efficiency increases with decreasing QD size. By comparing to theoretical models, our results suggest that impact ionization is sufficient to explain carrier multiplication in QDs.

  16. Gain properties of doped GaAs/AlGaAs multiple quantum well avalanche photodiode structures

    NASA Technical Reports Server (NTRS)

    Menkara, H. M.; Wagner, B. K.; Summers, C. J.

    1995-01-01

    A comprehensive characterization has been made of the static and dynamical response of conventional and multiple quantum well (MQW) avalanche photodiodes (APDs). Comparison of the gain characteristics at low voltages between the MQW and conventional APDs show a direct experimental confirmation of a structure-induced carrier multiplication due to interband impact ionization. Similar studies of the bias dependence of the excess noise characteristics show that the low-voltage gain is primarily due to electron ionization in the MQW-APDS, and to both electron and hole ionization in the conventional APDS. For the doped MQW APDS, the average gain per stage was calculated by comparing gain data with carrier profile measurements, and was found to vary from 1.03 at low bias to 1.09 near avalanche breakdown.

  17. Resonant optical properties of AlGaAs/GaAs multiple-quantum-well based Bragg structure at the second quantum state

    NASA Astrophysics Data System (ADS)

    Chen, Y.; Maharjan, N.; Liu, Z.; Nakarmi, M. L.; Chaldyshev, V. V.; Kundelev, E. V.; Poddubny, A. N.; Vasil'ev, A. P.; Yagovkina, M. A.; Shakya, N. M.

    2017-03-01

    An AlGaAs/GaAs multiple-quantum-well based resonant Bragg structure was designed to match the optical Bragg resonance with the exciton-polariton resonance at the second quantum state in the GaAs quantum wells. The sample structure with 60 periods of AlGaAs/GaAs quantum wells was grown on a semi-insulating GaAs substrate by molecular beam epitaxy. Angle- and temperature-dependent photoluminescence, optical reflectance, and electro-reflectance spectroscopies were employed to study the resonant optical properties of the Bragg structure. Broad and enhanced optical and electro-reflectance features were observed when the Bragg resonance was tuned to the second quantum state of the GaAs quantum well excitons, manifesting a strong light-matter interaction. From the electro-optical experiments, we found the electro-reflectance features related to the transitions of x(e2-hh2) and x(e2-hh1) excitons. The excitonic transition x(e2-hh1), which is prohibited at zero electric field, was allowed by a DC bias due to the brake of symmetry and increased overlap of the electron and hole wave functions caused by the electric field. By tuning the Bragg resonance frequency, we have observed the electro-reflectance feature related to the second quantum state up to room temperature, which evidences a robust light-matter interaction in the resonant Bragg structure.

  18. Upper bounds on the error probabilities and asymptotic error exponents in quantum multiple state discrimination

    SciTech Connect

    Audenaert, Koenraad M. R.; Mosonyi, Milán

    2014-10-01

    We consider the multiple hypothesis testing problem for symmetric quantum state discrimination between r given states σ₁, …, σ{sub r}. By splitting up the overall test into multiple binary tests in various ways we obtain a number of upper bounds on the optimal error probability in terms of the binary error probabilities. These upper bounds allow us to deduce various bounds on the asymptotic error rate, for which it has been hypothesized that it is given by the multi-hypothesis quantum Chernoff bound (or Chernoff divergence) C(σ₁, …, σ{sub r}), as recently introduced by Nussbaum and Szkoła in analogy with Salikhov's classical multi-hypothesis Chernoff bound. This quantity is defined as the minimum of the pairwise binary Chernoff divergences min{sub jquantum Chernoff bound is always achieved.

  19. Investigation of Photoluminescence and Photocurrent in InGaAsP/InP Strained Multiple Quantum Well Heterostructures

    NASA Technical Reports Server (NTRS)

    Raisky, O. Y.; Wang, W. B.; Alfano, R. R.; Reynolds, C. L., Jr.; Swaminathan, V.

    1997-01-01

    Multiple quantum well InGaAsP/InP p-i-n laser heterostructures with different barrier thicknesses have been investigated using photoluminescence (PL) and photocurrent (PC) measurements. The observed PL spectrum and peak positions are in good agreement with those obtained from transfer matrix calculations. Comparing the measured quantum well PC with calculated carrier escape rates, the photocurrent changes are found to be governed by the temperature dependence of the electron escape time.

  20. Theory of multiple quantum dot formation in strained-layer heteroepitaxy

    NASA Astrophysics Data System (ADS)

    Du, Lin; Maroudas, Dimitrios

    2016-07-01

    We develop a theory for the experimentally observed formation of multiple quantum dots (QDs) in strained-layer heteroepitaxy based on surface morphological stability analysis of a coherently strained epitaxial thin film on a crystalline substrate. Using a fully nonlinear model of surface morphological evolution that accounts for a wetting potential contribution to the epitaxial film's free energy as well as surface diffusional anisotropy, we demonstrate the formation of multiple QD patterns in self-consistent dynamical simulations of the evolution of the epitaxial film surface perturbed from its planar state. The simulation predictions are supported by weakly nonlinear analysis of the epitaxial film surface morphological stability. We find that, in addition to the Stranski-Krastanow instability, long-wavelength perturbations from the planar film surface morphology can trigger a nonlinear instability, resulting in the splitting of a single QD into multiple QDs of smaller sizes, and predict the critical wavelength of the film surface perturbation for the onset of the nonlinear tip-splitting instability. The theory provides a fundamental interpretation for the observations of "QD pairs" or "double QDs" and other multiple QDs reported in experimental studies of epitaxial growth of semiconductor strained layers and sets the stage for precise engineering of tunable-size nanoscale surface features in strained-layer heteroepitaxy by exploiting film surface nonlinear, pattern forming phenomena.

  1. Theory of multiple quantum dot formation in strained-layer heteroepitaxy

    SciTech Connect

    Du, Lin; Maroudas, Dimitrios

    2016-07-11

    We develop a theory for the experimentally observed formation of multiple quantum dots (QDs) in strained-layer heteroepitaxy based on surface morphological stability analysis of a coherently strained epitaxial thin film on a crystalline substrate. Using a fully nonlinear model of surface morphological evolution that accounts for a wetting potential contribution to the epitaxial film's free energy as well as surface diffusional anisotropy, we demonstrate the formation of multiple QD patterns in self-consistent dynamical simulations of the evolution of the epitaxial film surface perturbed from its planar state. The simulation predictions are supported by weakly nonlinear analysis of the epitaxial film surface morphological stability. We find that, in addition to the Stranski-Krastanow instability, long-wavelength perturbations from the planar film surface morphology can trigger a nonlinear instability, resulting in the splitting of a single QD into multiple QDs of smaller sizes, and predict the critical wavelength of the film surface perturbation for the onset of the nonlinear tip-splitting instability. The theory provides a fundamental interpretation for the observations of “QD pairs” or “double QDs” and other multiple QDs reported in experimental studies of epitaxial growth of semiconductor strained layers and sets the stage for precise engineering of tunable-size nanoscale surface features in strained-layer heteroepitaxy by exploiting film surface nonlinear, pattern forming phenomena.

  2. Aluminum incorporation efficiencies in A- and C-plane AlGaN grown by MOVPE

    NASA Astrophysics Data System (ADS)

    Dong-Yue, Han; Hui-Jie, Li; Gui-Juan, Zhao; Hong-Yuan, Wei; Shao-Yan, Yang; Lian-Shan, Wang

    2016-04-01

    The aluminum incorporation efficiencies in nonpolar A-plane and polar C-plane AlGaN films grown by metalorganic vapour phase epitaxy (MOVPE) are investigated. It is found that the aluminum content in A-plane AlGaN film is obviously higher than that in the C-plane sample when the growth temperature is above 1070 °C. The high aluminum incorporation efficiency is beneficial to fabricating deep ultraviolet optoelectronic devices. Moreover, the influences of the gas inlet ratio, the V/III ratio, and the chamber pressure on the aluminum content are studied. The results are important for growing the AlGaN films, especially nonpolar AlGaN epilayers. Project supported by the National Natural Science Foundation of China (Grant Nos. 61504128, 61504129, 61274041, and 11275228), the National Basic Research Program of China (Grant No. 2012CB619305), the National High Technology Research and Development Program of China (Grant Nos. 2014AA032603, 2014AA032609, and 2015AA010801), and the Guangdong Provincial Scientific and Technologic Planning Program, China (Grant No. 2014B010119002).

  3. Optically induced excitonic electroabsorption in a periodically delta-doped InGaAs/GaAs multiple quantum well structure

    NASA Technical Reports Server (NTRS)

    Larsson, A.; Maserjian, J.

    1991-01-01

    Large optically induced Stark shifts have been observed in a periodically delta-doped InGaAs/GaAs multiple quantum well structure. With an excitation intensity of 10 mW/sq cm, an absolute quantum well absorption change of 7000/cm was measured with a corresponding differential absorption change as high as 80 percent. The associated maximum change in the quantum well refractive index is 0.04. This material is promising for device development for all-optical computing and signal processing.

  4. Studies of heteronuclear dipolar interactions between spin-1/2 and quadrupolar nuclei by using REDOR during multiple quantum evolution

    NASA Astrophysics Data System (ADS)

    Pruski, M.; Bailly, A.; Lang, D. P.; Amoureux, J.-P.; Fernandez, C.

    1999-06-01

    A new technique for measurements of dipolar interactions in rotating solids is presented that combines the capabilities of multiple quantum magic angle spinning (MQMAS) with the rotational echo double resonance (REDOR). It employs the dipolar recoupling between spin-1/2 ( I) and quadrupolar ( S) nuclei by applying a series of π pulses to the I spins. In contrast to the previously reported MQ-REDOR method, the recoupling sequence is applied during the triple quantum, rather than single quantum evolution. As the dipolar effect is enhanced by the MQ coherence order, this new technique exhibits improved sensitivity toward weak dipolar interactions.

  5. The rigorous stochastic matrix multiplication scheme for the calculations of reduced equilibrium density matrices of open multilevel quantum systems

    NASA Astrophysics Data System (ADS)

    Chen, Xin

    2014-04-01

    Understanding the roles of the temporary and spatial structures of quantum functional noise in open multilevel quantum molecular systems attracts a lot of theoretical interests. I want to establish a rigorous and general framework for functional quantum noises from the constructive and computational perspectives, i.e., how to generate the random trajectories to reproduce the kernel and path ordering of the influence functional with effective Monte Carlo methods for arbitrary spectral densities. This construction approach aims to unify the existing stochastic models to rigorously describe the temporary and spatial structure of Gaussian quantum noises. In this paper, I review the Euclidean imaginary time influence functional and propose the stochastic matrix multiplication scheme to calculate reduced equilibrium density matrices (REDM). In addition, I review and discuss the Feynman-Vernon influence functional according to the Gaussian quadratic integral, particularly its imaginary part which is critical to the rigorous description of the quantum detailed balance. As a result, I establish the conditions under which the influence functional can be interpreted as the average of exponential functional operator over real-valued Gaussian processes for open multilevel quantum systems. I also show the difference between the local and nonlocal phonons within this framework. With the stochastic matrix multiplication scheme, I compare the normalized REDM with the Boltzmann equilibrium distribution for open multilevel quantum systems.

  6. The rigorous stochastic matrix multiplication scheme for the calculations of reduced equilibrium density matrices of open multilevel quantum systems

    SciTech Connect

    Chen, Xin

    2014-04-21

    Understanding the roles of the temporary and spatial structures of quantum functional noise in open multilevel quantum molecular systems attracts a lot of theoretical interests. I want to establish a rigorous and general framework for functional quantum noises from the constructive and computational perspectives, i.e., how to generate the random trajectories to reproduce the kernel and path ordering of the influence functional with effective Monte Carlo methods for arbitrary spectral densities. This construction approach aims to unify the existing stochastic models to rigorously describe the temporary and spatial structure of Gaussian quantum noises. In this paper, I review the Euclidean imaginary time influence functional and propose the stochastic matrix multiplication scheme to calculate reduced equilibrium density matrices (REDM). In addition, I review and discuss the Feynman-Vernon influence functional according to the Gaussian quadratic integral, particularly its imaginary part which is critical to the rigorous description of the quantum detailed balance. As a result, I establish the conditions under which the influence functional can be interpreted as the average of exponential functional operator over real-valued Gaussian processes for open multilevel quantum systems. I also show the difference between the local and nonlocal phonons within this framework. With the stochastic matrix multiplication scheme, I compare the normalized REDM with the Boltzmann equilibrium distribution for open multilevel quantum systems.

  7. Performance of 128×128 solar-blind AlGaN ultraviolet focal plane arrays

    NASA Astrophysics Data System (ADS)

    Yuan, Yongang; Zhang, Yan; Liu, Dafu; Chu, Kaihui; Wang, Ling; Li, Xiangyang

    2009-07-01

    Ozone layer intensively absorbs 240nm to 285 nm incidence, when the sunshine goes through stratospheric. There is almost no UVC (200nm-280nm) band radiation existing below stratospheric. Because the radiation target presents a strong contrast between atmosphere and background, solar-blind band radiation is very useful. Wide band gap materials, especially III-V nitride materials, have attracted extensive interest. The direct band gap of GaN and A1N is 3.4 and 6.2 eV, respectively. Since they are miscible with each other and form a complete series of AlGaN alloys, AlGaN has direct band gaps from 3.4 to 6.2 eV, corresponding to cutoff wavelengths from 365 to 200 nm. A back-illuminated hybrid FPA has been developed by Shanghai Institute of Technical Physics Chinese Academy of Science. This paper reports the performance of the 128x128 solar-blind AlGaN UV Focal Plane Arrays (FPAs). More and more a CTIA (capacitivetransimpedance) readout circuit architecture has been proven to be well suited for AlGaN detectors arrays. The bared readout circuit was first tested to find out optimal analog reference voltage. Second, this ROIC was tested in a standard 20-pin shielded dewar at 115 K to 330K. Then, a new test system was set up to obtain test UV FPA noise, swing voltage, data valid time, operating speed, dynamic range, UV response etc. The results show that 128x128 back-illuminated AlGaN PIN detector SNR is as high as 74db at the speed of above30 frame per second. Also, some noise test method is mentioned.

  8. Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature.

    PubMed

    Li, K H; Liu, X; Wang, Q; Zhao, S; Mi, Z

    2015-02-01

    Ultraviolet laser radiation has been adopted in a wide range of applications as diverse as water purification, flexible displays, data storage, sterilization, diagnosis and bioagent detection. Success in developing semiconductor-based, compact ultraviolet laser sources, however, has been extremely limited. Here, we report that defect-free disordered AlGaN core-shell nanowire arrays, formed directly on a Si substrate, can be used to achieve highly stable, electrically pumped lasers across the entire ultraviolet AII (UV-AII) band (∼320-340 nm) at low temperatures. The laser threshold is in the range of tens of amps per centimetre squared, which is nearly three orders of magnitude lower than those of previously reported quantum-well lasers. This work also reports the first demonstration of electrically injected AlGaN-based ultraviolet lasers monolithically grown on a Si substrate, and offers a new avenue for achieving semiconductor lasers in the ultraviolet B (UV-B) (280-320 nm) and ultraviolet C (UV-C) (<280 nm) bands.

  9. Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes

    SciTech Connect

    Quan, Zhijue Wang, Li Zheng, Changda; Liu, Junlin; Jiang, Fengyi

    2014-11-14

    The roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well (MQW) light-emitting diodes are investigated by numerical simulation. The simulation results show that V-shaped pits cannot only screen dislocations, but also play an important role on promoting hole injection into the MQWs. It is revealed that the injection of holes into the MQW via the sidewalls of the V-shaped pits is easier than via the flat region, due to the lower polarization charge densities in the sidewall structure with lower In concentration and (10–11)-oriented semi-polar facets.

  10. Quantum-well intermixing for the control of second-order nonlinear effects in AlGaAs multiple-quantum-well waveguides.

    PubMed

    Street, M W; Whitbread, N D; Hutchings, D C; Arnold, J M; Marsh, J H; Aitchison, J S; Kennedy, G T; Sibbett, W

    1997-11-01

    We present experimental evidence to demonstrate the feasibility of a promising new quasi-phase-matching technique in AlGaAs multiple-quantum-well waveguides. Non-phase-matched second-harmonic-generation measurements indicate that, for sub-half-bandgap excitation near 1.5 microm , quantum-well intermixing by impurity-free vacancy disordering results in a reduction of the nonlinear susceptibility chi((2))(zxy) (~340 pm/V) by 17%. Relatively low intermixed waveguide losses, and the high spatial resolution of the impurity-free vacancy disordering process, suggest that periodic intermixing along the direction of propagation should lead to useful frequency-conversion efficiencies.

  11. Quantum Chemically Estimated Abraham Solute Parameters Using Multiple Solvent-Water Partition Coefficients and Molecular Polarizability.

    PubMed

    Liang, Yuzhen; Xiong, Ruichang; Sandler, Stanley I; Di Toro, Dominic M

    2017-09-05

    Polyparameter Linear Free Energy Relationships (pp-LFERs), also called Linear Solvation Energy Relationships (LSERs), are used to predict many environmentally significant properties of chemicals. A method is presented for computing the necessary chemical parameters, the Abraham parameters (AP), used by many pp-LFERs. It employs quantum chemical calculations and uses only the chemical's molecular structure. The method computes the Abraham E parameter using density functional theory computed molecular polarizability and the Clausius-Mossotti equation relating the index refraction to the molecular polarizability, estimates the Abraham V as the COSMO calculated molecular volume, and computes the remaining AP S, A, and B jointly with a multiple linear regression using sixty-five solvent-water partition coefficients computed using the quantum mechanical COSMO-SAC solvation model. These solute parameters, referred to as Quantum Chemically estimated Abraham Parameters (QCAP), are further adjusted by fitting to experimentally based APs using QCAP parameters as the independent variables so that they are compatible with existing Abraham pp-LFERs. QCAP and adjusted QCAP for 1827 neutral chemicals are included. For 24 solvent-water systems including octanol-water, predicted log solvent-water partition coefficients using adjusted QCAP have the smallest root-mean-square errors (RMSEs, 0.314-0.602) compared to predictions made using APs estimated using the molecular fragment based method ABSOLV (0.45-0.716). For munition and munition-like compounds, adjusted QCAP has much lower RMSE (0.860) than does ABSOLV (4.45) which essentially fails for these compounds.

  12. Multiple quantum oscillation frequencies in YBa2Cu3O6+δ and bilayer splitting

    NASA Astrophysics Data System (ADS)

    Garcia-Aldea, David; Chakravarty, Sudip

    2010-10-01

    Experiments have revealed multiple quantum oscillation frequencies in underdoped high-temperature superconductor YBa2Cu3O6+δ, corresponding to approximately 10% doping, which contains CuO bilayers in the unit cell. These unit cells are further coupled along the c-axis by a tunneling matrix element. A model of the energy dispersion that has its roots in the previously determined electronic structure, combined with twofold commensurate density waves, reveals multiple electron and hole pockets. To the extent that quasiparticles of the reconstructed Fermi surface have finite residues, however small, the formation of Landau levels is the cause of these oscillations, and the bilayer splitting and warping of the electronic dispersion along the direction perpendicular to the CuO-planes are firm consequences. The goal here is to explore this possibility from various directions and provide a better understanding of the rapidly developing experimental situation involving multiple frequencies. An important conclusion is that bilayer splitting is considerably renormalized from the value obtained from band structure calculations. It would be extremely interesting to perform these experiments for higher values of doping. We roughly expect the splitting of the frequencies to increase with doping, but the full picture may be more complex because the density wave order parameter is also expected to decrease with doping, vanishing around the middle of the superconducting dome.

  13. Auxiliary-field quantum Monte Carlo calculations with multiple-projector pseudopotentials

    NASA Astrophysics Data System (ADS)

    Ma, Fengjie; Zhang, Shiwei; Krakauer, Henry

    2017-04-01

    We have implemented recently developed multiple-projector pseudopotentials into the plane-wave-based auxiliary-field quantum Monte Carlo (pw-AFQMC) method. Multiple-projector pseudopotentials can yield smaller plane-wave cutoffs while maintaining or improving transferability. This reduces the computational cost of pw-AFQMC, increasing its reach to larger and more complicated systems. We discuss the use of nonlocal pseudopotentials in the separable Kleinman-Bylander form, and the implementation in pw-AFQMC of the multiple-projector optimized norm-conserving pseudopotential ONCVPSP of Hamann. The accuracy of the method is first demonstrated by equation-of-state calculations of the ionic insulator NaCl and more strongly correlated metal Cu. The method is then applied to calibrate the accuracy of density-functional theory (DFT) predictions of the phase stability of recently discovered high temperature and pressure superconducting sulfur hydride systems. We find that DFT results are in good agreement with pw-AFQMC, due to the near cancellation of electron-electron correlation effects between different structures.

  14. Strong multiple-capture effect in slow Ar^17+-Ar collisions: a quantum mechanical analysis

    NASA Astrophysics Data System (ADS)

    Salehzadeh, Arash; Kirchner, Tom

    2012-10-01

    A recent X-ray spectroscopy experiment on 255 keV Ar^17+-Ar collisions [1] provided evidence for strong multiple-electron capture --- a feature that is supported by classical trajectory Monte Carlo calculations for similar collision systems [2]. We have coupled a quantum-mechanical independent-electron model calculation for the Ar^17+-Ar system with (semi-) phenomenological Auger and radiative cascade models to test these findings. The capture calculations are performed using the basis generator method and include single-particle states on the projectile up to the 10th shell. The cross sections obtained for shell-specific multiple capture are fed into a stabilization scheme proposed in Ref. [3] in order to obtain n-specific cross sections for apparent single (and double) capture that in turn are fed into a radiative cascade code [1] to obtain X-ray emission intensities that can be compared with the experimental data. Good agreement is found for the Lyman series from n=3 to n=7 if the multiple-capture contributions are included, whereas calculations that ignore them are in stark conflict with the data. [4pt] [1] M. Trassinelli et al., J. Phys. B 45, 085202 (2012)[0pt] [2] S. Otranto and R. Olson, Phys. Rev. A 83, 032710 (2011)[0pt] [3] R. Ali et al., Phys. Rev A 49, 3586 (1994).

  15. Thin-Wall GaN/InAlN Multiple Quantum Well Tubes.

    PubMed

    Durand, Christophe; Carlin, Jean-François; Bougerol, Catherine; Gayral, Bruno; Salomon, Damien; Barnes, Jean-Paul; Eymery, Joël; Butté, Raphaël; Grandjean, Nicolas

    2017-06-14

    Thin-wall tubes composed of nitride semiconductors (III-N compounds) based on GaN/InAlN multiple quantum wells (MQWs) are fabricated by metal-organic vapor-phase epitaxy in a simple and full III-N approach. The synthesis of such MQW-tubes is based on the growth of N-polar c-axis vertical GaN wires surrounded by a core-shell MQW heterostructure followed by in situ selective etching using controlled H2/NH3 annealing at 1010 °C to remove the inner GaN wire part. After this process, well-defined MQW-based tubes having nonpolar m-plane orientation exhibit UV light near 330 nm up to room temperature, consistent with the emission of GaN/InAlN MQWs. Partially etched tubes reveal a quantum-dotlike signature originating from nanosized GaN residuals present inside the tubes. The possibility to fabricate in a simple way thin-wall III-N tubes composed of an embedded MQW-based active region offering controllable optical emission properties constitutes an important step forward to develop new nitride devices such as emitters, detectors or sensors based on tubelike nanostructures.

  16. Efficient Red Perovskite Light-Emitting Diodes Based on Solution-Processed Multiple Quantum Wells.

    PubMed

    Zhang, Shuting; Yi, Chang; Wang, Nana; Sun, Yan; Zou, Wei; Wei, Yingqiang; Cao, Yu; Miao, Yanfeng; Li, Renzhi; Yin, Yao; Zhao, Ni; Wang, Jianpu; Huang, Wei

    2017-06-01

    This paper reports a facile and scalable process to achieve high performance red perovskite light-emitting diodes (LEDs) by introducing inorganic Cs into multiple quantum well (MQW) perovskites. The MQW structure facilitates the formation of cubic CsPbI3 perovskites at low temperature, enabling the Cs-based QWs to provide pure and stable red electroluminescence. The versatile synthesis of MQW perovskites provides freedom to control the crystallinity and morphology of the emission layer. It is demonstrated that the inclusion of chloride can further improve the crystallization and consequently the optical properties of the Cs-based MQW perovskites, inducing a low turn-on voltage of 2.0 V, a maximum external quantum efficiency of 3.7%, a luminance of ≈440 cd m(-2) at 4.0 V. These results suggest that the Cs-based MQW LED is among the best performing red perovskite LEDs. Moreover, the LED device demonstrates a record lifetime of over 5 h under a constant current density of 10 mA cm(-2) . This work suggests that the MQW perovskites is a promising platform for achieving high performance visible-range electroluminescence emission through high-throughput processing methods, which is attractive for low-cost lighting and display applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Perovskite light-emitting diodes based on solution-processed self-organized multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Wang, Nana; Cheng, Lu; Ge, Rui; Zhang, Shuting; Miao, Yanfeng; Zou, Wei; Yi, Chang; Sun, Yan; Cao, Yu; Yang, Rong; Wei, Yingqiang; Guo, Qiang; Ke, You; Yu, Maotao; Jin, Yizheng; Liu, Yang; Ding, Qingqing; di, Dawei; Yang, Le; Xing, Guichuan; Tian, He; Jin, Chuanhong; Gao, Feng; Friend, Richard H.; Wang, Jianpu; Huang, Wei

    2016-11-01

    Organometal halide perovskites can be processed from solutions at low temperatures to form crystalline direct-bandgap semiconductors with promising optoelectronic properties. However, the efficiency of their electroluminescence is limited by non-radiative recombination, which is associated with defects and leakage current due to incomplete surface coverage. Here we demonstrate a solution-processed perovskite light-emitting diode (LED) based on self-organized multiple quantum wells (MQWs) with excellent film morphologies. The MQW-based LED exhibits a very high external quantum efficiency of up to 11.7%, good stability and exceptional high-power performance with an energy conversion efficiency of 5.5% at a current density of 100 mA cm-2. This outstanding performance arises because the lower bandgap regions that generate electroluminescence are effectively confined by perovskite MQWs with higher energy gaps, resulting in very efficient radiative decay. Surprisingly, there is no evidence that the large interfacial areas between different bandgap regions cause luminescence quenching.

  18. Characteristics of nanoporous InGaN/GaN multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Wang, W. J.; Yang, G. F.; Chen, P.; Yu, Z. G.; Liu, B.; Xie, Z. L.; Xiu, X. Q.; Wu, Z. L.; Xu, F.; Xu, Z.; Hua, X. M.; Zhao, H.; Han, P.; Shi, Y.; Zhang, R.; Zheng, Y. D.

    2014-07-01

    The nanoporous InGaN/GaN multiple quantum wells (MQWs) has been fabricated through rapid thermal annealing (RTA) and inductively coupled plasma (ICP) dry etching process using self-assembled Ni nanoporous masks. In comparison with the as-grown planar InGaN/GaN MQWs, both internal quantum efficiency and light extraction efficiency for nanoporous InGaN/GaN MQWs are increased, which can be concluded from the photoluminescence (PL) measurements. The thermal activation energy of nanoporous structure (107.44 meV) is significantly higher than that of the as-grown sample (33.02 meV) from temperature-dependent PL measurement, indicating that carriers are well confined and the non-radiative recombination caused by the dislocations and other defects has been reduced. Besides, enhanced light scattering in the disordered nanoporous system can further increase the output emission intensity. The enhanced performance of nanoporous InGaN/GaN MQWs reveals its promising applications for high-efficiency light-emitting devices.

  19. Enhanced carrier multiplication in engineered quasi-type-II quantum dots

    PubMed Central

    Cirloganu, Claudiu M.; Padilha, Lazaro A.; Lin, Qianglu; Makarov, Nikolay S.; Velizhanin, Kirill A.; Luo, Hongmei; Robel, Istvan; Pietryga, Jeffrey M.; Klimov, Victor I.

    2014-01-01

    One process limiting the performance of solar cells is rapid cooling (thermalization) of hot carriers generated by higher-energy solar photons. In principle, the thermalization losses can be reduced by converting the kinetic energy of energetic carriers into additional electron-hole pairs via carrier multiplication (CM). While being inefficient in bulk semiconductors this process is enhanced in quantum dots, although not sufficiently high to considerably boost the power output of practical devices. Here we demonstrate that thick-shell PbSe/CdSe nanostructures can show almost a fourfold increase in the CM yield over conventional PbSe quantum dots, accompanied by a considerable reduction of the CM threshold. These structures enhance a valence-band CM channel due to effective capture of energetic holes into long-lived shell-localized states. The attainment of the regime of slowed cooling responsible for CM enhancement is indicated by the development of shell-related emission in the visible observed simultaneously with infrared emission from the core. PMID:24938462

  20. Hot exciton cooling and multiple exciton generation in PbSe quantum dots.

    PubMed

    Kumar, Manoj; Vezzoli, Stefano; Wang, Zilong; Chaudhary, Varun; Ramanujan, Raju V; Gurzadyan, Gagik G; Bruno, Annalisa; Soci, Cesare

    2016-11-16

    Multiple exciton generation (MEG) is a promising process to improve the power conversion efficiency of solar cells. PbSe quantum dots (QDs) have shown reasonably high MEG quantum yield (QY), although the photon energy threshold for this process is still under debate. One of the reasons for this inconsistency is the complicated competition of MEG and hot exciton cooling, especially at higher excited states. Here, we investigate MEG QY and the origin of the photon energy threshold for MEG in PbSe QDs of three different sizes by studying the transient absorption (TA) spectra, both at the band gap (near infrared, NIR) and far from the band gap energy (visible range). The comparison of visible TA spectra and dynamics for different pump wavelengths, below, around and above the MEG threshold, provides evidence of the role of the Σ transition in slowing down the exciton cooling process that can help MEG to take over the phonon relaxation process. The universality of this behavior is confirmed by studying QDs of three different sizes. Moreover, our results suggest that MEG QY can be determined by pump-probe experiments probed above the band gap.

  1. Molecular beam epitaxial growth and characterization of Al(Ga)N nanowire deep ultraviolet light emitting diodes and lasers

    NASA Astrophysics Data System (ADS)

    Mi, Z.; Zhao, S.; Woo, S. Y.; Bugnet, M.; Djavid, M.; Liu, X.; Kang, J.; Kong, X.; Ji, W.; Guo, H.; Liu, Z.; Botton, G. A.

    2016-09-01

    We report on the detailed molecular beam epitaxial growth and characterization of Al(Ga)N nanowire heterostructures on Si and their applications for deep ultraviolet light emitting diodes and lasers. The nanowires are formed under nitrogen-rich conditions without using any metal catalyst. Compared to conventional epilayers, Mg-dopant incorporation is significantly enhanced in nearly strain- and defect-free Al(Ga)N nanowire structures, leading to efficient p-type conduction. The resulting Al(Ga)N nanowire LEDs exhibit excellent performance, including a turn-on voltage of ∼5.5 V for an AlN nanowire LED operating at 207 nm. The design, fabrication, and performance of an electrically injected AlGaN nanowire laser operating in the UV-B band is also presented.

  2. Material and design engineering of (Al)GaN for high-performance avalanche photodiodes and intersubband applications

    NASA Astrophysics Data System (ADS)

    Razeghi, M.; Bayram, C.

    2009-05-01

    Numerous applications in scientific, medical, and military areas demand robust, compact, sensitive, and fast ultraviolet (UV) detection. Our (Al)GaN photodiodes pose high avalanche gain and single-photon detection efficiency that can measure up to these requirements. Inherit advantage of back-illumination in our devices offers an easier integration and layout packaging via flip-chip hybridization for UV focal plane arrays that may find uses from space applications to hostile-agent detection. Thanks to the recent (Al)GaN material optimization, III-Nitrides, known to have fast carrier dynamics and short relaxation times, are employed in (Al)GaN based superlattices that absorb in near-infrared regime. In this work, we explain the origins of our high performance UV APDs, and employ our (Al)GaN material knowledge for intersubband applications. We also discuss the extension of this material engineering into the far infrared, and even the terahertz (THz) region.

  3. Influence of annealing and surfactant on InGaAsN/GaAs multiple quantum well

    NASA Astrophysics Data System (ADS)

    Kim, T. S.; Park, J. Y.; Cuong, T. V.; Kim, H. G.; Lee, H. J.; Suh, E.-K.; Hong, C.-H.

    2004-07-01

    Influence of antimony (Sb) as a surfactant and annealing on the structural and optical properties of InGaAsN/GaAs multiple quantum-well (MQW) grown by metalorganic chemical vapor deposition (MOCVD) is studied. It was found that an increase in compressive strain from an analysis of the satellite peaks in high-resolution X-ray diffraction was observed with increasing interruption time and annealing temperature. The photocurrent (PC) peak of as-grown MQW is blue-shifted with introduction time of excess Sb flux during growth interruption process. It seems to be due to the improvement of structure properties at interface by a surfactant suppressing surface diffusion phenomenon. After annealing process, the PC peak is blue-shifted with increasing annealing temperature for all samples. It seems to be related with the compressive strain and QW intermixing.

  4. Bound states for multiple Dirac-δ wells in space-fractional quantum mechanics

    SciTech Connect

    Tare, Jeffrey D. Esguerra, Jose Perico H.

    2014-01-15

    Using the momentum-space approach, we obtain bound states for multiple Dirac-δ wells in the framework of space-fractional quantum mechanics. Introducing first an attractive Dirac-comb potential, i.e., Dirac comb with strength −g (g > 0), in the space-fractional Schrödinger equation we show that the problem of obtaining eigenenergies of a system with N Dirac-δ wells can be reduced to a problem of obtaining the eigenvalues of an N × N matrix. As an illustration we use the present matrix formulation to derive expressions satisfied by the bound-state energies of N = 1, 2, 3 delta wells. We also obtain the corresponding wave functions and express them in terms of Fox's H-function.

  5. Exciton effects in the index of refraction of multiple quantum wells and superlattices

    NASA Technical Reports Server (NTRS)

    Kahen, K. B.; Leburton, J. P.

    1986-01-01

    Theoretical calculations of the index of refraction of multiple quantum wells and superlattices are presented. The model incorporates both the bound and continuum exciton contributions for the gamma region transitions. In addition, the electronic band structure model has both superlattice and bulk alloy properties. The results indicate that large light-hole masses, i.e., of about 0.23, produced by band mixing effects, are required to account for the experimental data. Furthermore, it is shown that superlattice effects rapidly decrease for energies greater than the confining potential barriers. Overall, the theoretical results are in very good agreement with the experimental data and show the importance of including exciton effects in the index of refraction.

  6. Phonon-Induced Dephasing of Excitons in Semiconductor Quantum Dots: Multiple Exciton Generation, Fission, and Luminescence

    NASA Astrophysics Data System (ADS)

    Madrid, Angeline; Kim, Hyeon-Deuk; Habenicht, Bradley; Prezhdo, Oleg

    2010-03-01

    Phonon-induced dephasing processes that govern optical line widths, multiple exciton (ME) generation (MEG), and ME fission (MEF) in semiconductor quantum dots (QDs) are investigated by ab initio molecular dynamics simulation. Using Si QDs as an example, we propose that MEF occurs by phonon-induced dephasing and, for the first time, estimate its time scale to be 100 fs. In contrast, luminescence and MEG dephasing times are all sub-10 fs. Generally, dephasing is faster for higher-energy and higher-order excitons and increased temperatures. MEF is slow because it is facilitated only by low-frequency acoustic modes. Luminescence and MEG couple to both acoustic and optical modes of the QD, as well as ligand vibrations. The detailed atomistic simulation of the dephasing processes advances understanding of exciton dynamics in QDs and other nanoscale materials.

  7. Effective mobility for sequential carrier transport in multiple quantum well structures

    NASA Astrophysics Data System (ADS)

    Toprasertpong, Kasidit; Goodnick, Stephen M.; Nakano, Yoshiaki; Sugiyama, Masakazu

    2017-08-01

    We investigate a theoretical model for effective carrier mobility to comprehensively describe the behavior of the perpendicular carrier transport across multiple quantum well (MQW) structures under applied electric field. The analytical expressions of effective mobilities for thermionic emission, direct tunneling, and thermally assisted tunneling are derived based on the quasithermal equilibrium approximation and the semiclassical approach. Effective electron and hole mobilities in InGaAs/GaAsP MQWs predicted from our model are in good agreement with the experimental results obtained from the carrier time-of-flight measurement near room temperature. With this concept, the complicated carrier dynamics inside MQWs can be simplified to an effective mobility, an equivalent parameter that is more straightforward to handle and can be easily incorporated in the conventional drift-diffusion model.

  8. Ultraviolet laser and photodetector of CdZnS/ZnS multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Tauchi, T.; Yamada, Y.; Ohno, T.; Mullins, J. T.; Masumoto, Y.

    1993-09-01

    Ultraviolet (UV) lasers have been constructed for the first time from multiple quantum well (MQW) heterostructures of CdxZn1-xS/ZnS (x=0.11-0.31) strained-layer superlattices. Stimulated emission can be observed either under optical pumping at RT or under pulsed injection at 30 K in the spectral range of 357-390 nm. Structures of the laser were fabricated by the gaseous low-pressure MOCVD method. A spectral narrowing in the emission spectrum with increasing current in the UV injection diode was clearly observed in the vicinity of 375 nm at 30 K. An UV photodetector has been successfully prepared from this MQW system, in which a spectral responsivity at 366 nm exhibits a high efficiency of about 60 mA/W.

  9. Ultraviolet laser and photodetector of CdZnS/ZnS multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Tauchi, T.; Yamada, Y.; Ohno, T.; Mullins, J. T.; Masumoto, Y.

    1993-09-01

    Ultraviolet (UV) lasers have been constructed for the first time from multiple quantum well (MQW) heterostructures of Cd xZn 1- xS/ZnS ( x=0.11-0.31) strained-layer superlattices. Stimulated emission can be observed either under optical pumping at RT or under pulsed injection at 30 K in the spectral range of 357-390 nm. Structures of the laser were fabricated by the gaseous low-pressure MOCVD method. A spectral narrowing in the emission spectrum with increasing current in the UV injection diode was clearly observed in the vicinity of 375 nm at 30 K. An UV photodetector has been successfully prepared from this MQW system, in which a spectral responsivity at 366 nm exhibits a high efficiency of about 60 mA/W.

  10. Order dependence of the profile of the intensities of multiple-quantum coherences

    SciTech Connect

    Lundin, A. A.; Zobov, V. E.

    2015-05-15

    A modification of the widespread phenomenological model theory of multiple-quantum (MQ) nuclear magnetic resonance spectra of a single cluster of correlated spins has been developed. In contrast to the mentioned theory, the size distribution of such clusters has been consistently taken into account. To obtain the distribution, solutions for the amplitudes of the expansion in the complete set of orthogonal operators are used. Expressions specifying the dependence of the profile of the intensities of MQ coherences on their number n (order) have been obtained. The total form of the dependence has been evaluated by means of the numerical implementation of the resulting expressions. The asymptotic expressions for large n values (wings of the spectrum) have been obtained analytically by the saddle-point method. It has been shown that the dependence under study has a Gaussian central part and exponential wings. The results obtained are in agreement with the previous calculations for some model systems and existing experimental data.

  11. Oxidation effects on cleaved multiple quantum well surfaces in air observed by scanning probe microscopy

    NASA Astrophysics Data System (ADS)

    Howells, S.; Gallagher, M. J.; Chen, T.; Pax, P.; Sarid, D.

    1992-08-01

    The paper presents the first atomic force microscopy (AFM) images of cleaved InGaAs/InP multiple quantum wells and compares them with scanning tunneling microscopy (STM) images taken of the same heterostructure. The images were stable in air for over a day. Based on these results, it is proposed that the mechanism for contrast in the images is due to an oxide layer that grows primarily on the InGaAs wells and not on the InP barriers. Both STM and AFM clearly resolve the individual wells of the heterostructure, although STM measured a larger corrugation than an AFM. STM also exhibited superior lateral resolution of about 2 nm, while AFM had a lateral resolution of approximately 6 nm.

  12. Phase separation in InGaN/GaN multiple quantum wells

    SciTech Connect

    McCluskey, M.D.; Romano, L.T.; Krusor, B.S.; Bour, D.P.; Johnson, N.M.; Brennan, S.

    1998-04-01

    Evidence is presented for phase separation in In{sub 0.27}Ga{sub 0.73}N/GaN multiple quantum wells. After annealing for 40 h at a temperature of 950{degree}C, the absorption threshold at 2.95 eV is replaced by a broad peak at 2.65 eV. This peak is attributed to the formation of In-rich InGaN phases in the active region. X-ray diffraction measurements show a shift in the diffraction peaks toward GaN, consistent with the formation of an In-poor phase. A diffraction peak corresponding to an In-rich phase is also present in the annealed material. Nanoscale In-rich InGaN precipitates are observed by transmission electron microscopy and energy dispersive x-ray chemical analysis. {copyright} {ital 1998 American Institute of Physics.}

  13. Design of a datapath for single-flux-quantum microprocessors with multiple ALUs

    NASA Astrophysics Data System (ADS)

    Tanaka, M.; Kondo, T.; Kawamoto, T.; Kamiya, Y.; Fujiwara, K.; Yamanashi, Y.; Akimoto, A.; Fujimaki, A.; Yoshikawa, N.; Terai, H.; Yorozu, S.

    2005-10-01

    We have demonstrated the components of datapath toward single-flux-quantum microprocessors based on our new architecture called the forwarding architecture. In the forwarding architecture, we improve the performance by utilizing multiple ALUs to conceal the inefficiency of bit-serial processing. The key components of the datapath are a register file and cascaded ALUs. We have designed the register file to hold four bit-serial data with two read ports and one write port. In each ALU, we have implemented six functionalities: addition, subtraction, logical AND, OR and Exclusive OR operations, and comparison with zero. We have tested the register file and the ALU using high-speed on-chip testing, and confirmed the correct operations up to 18 GHz and 23 GHz, respectively.

  14. Effects of dead zones in multiple-quantum-well binary-phase modulators on optical interconnections.

    PubMed

    Inbar, H; Taghizadeh, M R

    1998-02-10

    We investigate the effects of inactive regions [dead zones (DZ's)] in multiple-quantum-well binary-phase modulators used for free-space dynamic optical interconnection applications. Results, however, have implications for other types of pixelated spatial light modulators (SLM's). To our knowledge, the effects of DZ's in SLM's have not before been thoroughly studied in a context other than optical correlation. We investigate the DZ's (considered to be either opaque or transmissive) as a feature that may be exploited in system design, calculating light efficiency and fidelity as a function of DZ fractional width. It is shown that in particular cases an appropriate choice of DZ width would lead to an optical interconnection with substantially improved cross-talk performance.

  15. Bound states for multiple Dirac-δ wells in space-fractional quantum mechanics

    SciTech Connect

    Tare, Jeffrey D. Esguerra, Jose Perico H.

    2014-01-15

    Using the momentum-space approach, we obtain bound states for multiple Dirac-δ wells in the framework of space-fractional quantum mechanics. Introducing first an attractive Dirac-comb potential, i.e., Dirac comb with strength −g (g > 0), in the space-fractional Schrödinger equation we show that the problem of obtaining eigenenergies of a system with N Dirac-δ wells can be reduced to a problem of obtaining the eigenvalues of an N × N matrix. As an illustration we use the present matrix formulation to derive expressions satisfied by the bound-state energies of N = 1, 2, 3 delta wells. We also obtain the corresponding wave functions and express them in terms of Fox's H-function.

  16. Exciton effects in the index of refraction of multiple quantum wells and superlattices

    NASA Technical Reports Server (NTRS)

    Kahen, K. B.; Leburton, J. P.

    1986-01-01

    Theoretical calculations of the index of refraction of multiple quantum wells and superlattices are presented. The model incorporates both the bound and continuum exciton contributions for the gamma region transitions. In addition, the electronic band structure model has both superlattice and bulk alloy properties. The results indicate that large light-hole masses, i.e., of about 0.23, produced by band mixing effects, are required to account for the experimental data. Furthermore, it is shown that superlattice effects rapidly decrease for energies greater than the confining potential barriers. Overall, the theoretical results are in very good agreement with the experimental data and show the importance of including exciton effects in the index of refraction.

  17. Flat pancake distant dipolar fields for enhancement of intermolecular multiple-quantum coherence signals.

    PubMed

    Cai, Congbo; Lin, Yulan; Cai, Shuhui; Sun, Huijun; Zhong, Jianhui; Chen, Zhong

    2012-03-07

    Intermolecular multiple-quantum coherences (iMQCs) originated from distant dipolar field (DDF) possess some appealing unique properties for magnetic resonance imaging (MRI). DDF is usually induced with continuous wave (i.e., sine- or square-wave) magnetization modulation in the whole sample. In this article, a spatially localized and enhanced DDF was optimally tailored in a thin slice with an adiabatic inversion pulse. Evidence was provided to show that careful tailoring of the spatially localized DDF can generate highly efficient iMQC signals, with more than two-fold enhancement compared to the conventional sine-wave magnetization modulation method, and 1.5 times of that with the square-wave modulation under the similar condition. Theoretical predictions, simulation results, and experimental verifications agree well with each other. Practical implementation of this approach for efficient iMQC MRI was explored. © 2012 American Institute of Physics

  18. Germanium-tin multiple quantum well on silicon avalanche photodiode for photodetection at two micron wavelength

    NASA Astrophysics Data System (ADS)

    Dong, Yuan; Wang, Wei; Lee, Shuh Ying; Lei, Dian; Gong, Xiao; Khai Loke, Wan; Yoon, Soon-Fatt; Liang, Gengchiau; Yeo, Yee-Chia

    2016-09-01

    We report the demonstration of a germanium-tin multiple quantum well (Ge0.9Sn0.1 MQW)-on-Si avalanche photodiode (APD) for light detection near the 2 μm wavelength range. The measured spectral response covers wavelengths from 1510 to 2003 nm. An optical responsivity of 0.33 A W-1 is achieved at 2003 nm due to the internal avalanche gain. In addition, a thermal coefficient of breakdown voltage is extracted to be 0.053% K-1 based on the temperature-dependent dark current measurement. As compared to the traditional 2 μm wavelength APDs, the Si-based APD is promising for its small excess noise factor, less stringent demand on temperature stability, and its compatibility with silicon technology.

  19. Probing degradation in complex engineering silicones by 1H multiple quantum NMR

    SciTech Connect

    Maxwell, R S; Chinn, S C; Giuliani, J; Herberg, J L

    2007-09-05

    Static {sup 1}H Multiple Quantum Nuclear Magnetic Resonance (MQ NMR) has recently been shown to provide detailed insight into the network structure of pristine silicon based polymer systems. The MQ NMR method characterizes the residual dipolar couplings of the silicon chains that depend on the average molecular weight between physical or chemical constraints. Recently, we have employed MQ NMR methods to characterize the changes in network structure in a series of complex silicone materials subject to numerous degradation mechanisms, including thermal, radiative, and desiccative. For thermal degradation, MQ NMR shows that a combination of crosslinking due to post-curing reactions as well as random chain scissioning reactions occurs. For radiative degradation, the primary mechanisms are via crosslinking both in the network and at the interface between the polymer and the inorganic filler. For samples stored in highly desiccating environments, MQ NMR shows that the average segmental dynamics are slowed due to increased interactions between the filler and the network polymer chains.

  20. Analytical modeling of the resolution of photorefractive multiple quantum well spatial light modulators

    NASA Astrophysics Data System (ADS)

    Abeeluck, A. K.; Garmire, E.; Canoglu, E.

    2000-11-01

    An analytical model that includes lateral drift of photocarriers is developed to explain the experimental resolution of photorefractive multiple quantum well (MQW) devices. The model is in excellent agreement with a phenomenological fit proposed earlier and it follows a small intensity modulation model closely. Charge distributions with and without lateral drift of carriers at the MQW interfaces are assumed in order to calculate the peak diffraction efficiency as a function of grating period. An effective mobility-lifetime product is used to account for the effect of lateral drift in the MQW region. It is shown that good agreement with experiment is obtained when lateral drift is taken into account. Moreover, the model is applied to the study of design tradeoff between resolution, sensitivity, and diffraction efficiency which are all of crucial importance in the performance of practical devices.

  1. Quantum

    NASA Astrophysics Data System (ADS)

    Elbaz, Edgard

    This book gives a new insight into the interpretation of quantum mechanics (stochastic, integral paths, decoherence), a completely new treatment of angular momentum (graphical spin algebra) and an introduction to Fermion fields (Dirac equation) and Boson fields (e.m. and Higgs) as well as an introduction to QED (quantum electrodynamics), supersymmetry and quantum cosmology.

  2. Strain-balanced InGaN/GaN multiple quantum wells

    SciTech Connect

    Van Den Broeck, D. M.; Hosalli, A. M.; Bedair, S. M.; Bharrat, D.; El-Masry, N. A.

    2014-07-21

    InGaN/GaN multiple quantum well (MQW) structures suffer from a high amount of compressive strain in the InGaN wells and the accompanied piezoelectric field resulting in both a blue shift in emission and a reduction of emission intensity. We report the growth of In{sub x}Ga{sub 1−x}N/GaN “strain-balanced” multiple quantum wells (SBMQWs) grown on thick In{sub y}Ga{sub 1−y}N templates for x > y by metal organic chemical vapor deposition. SBMQWs consist of alternating layers of In{sub x}Ga{sub 1−x}N wells and GaN barriers under compressive and tensile stress, respectively, which have been lattice matched to a thick In{sub y}Ga{sub 1−y}N template. Growth of the In{sub y}Ga{sub 1−y}N template is also detailed in order to achieve thick, relaxed In{sub y}Ga{sub 1−y}N grown on GaN without the presence of V-grooves. When compared to conventional In{sub x}Ga{sub 1−x}N/GaN MQWs grown on GaN, the SBMQW structures exhibit longer wavelength emission and higher emission intensity for the same InN mole fraction due to a reduction in the well strain and piezoelectric field. By matching the average lattice constant of the MQW active region to the lattice constant of the In{sub y}Ga{sub 1−y}N template, essentially an infinite number of periods can be grown using the SBMQW growth method without relaxation-related effects. SBMQWs can be utilized to achieve longer wavelength emission in light emitting diodes without the use of excess indium and can be advantageous in addressing the “green gap.”.

  3. Multiple excitons and the electron phonon bottleneck in semiconductor quantum dots: An ab initio perspective

    NASA Astrophysics Data System (ADS)

    Prezhdo, Oleg V.

    2008-07-01

    The article presents the current perspective on the nature of photoexcited states in semiconductor quantum dots (QDs). The focus is on multiple excitons and photo-induced electron-phonon dynamics in PbSe and CdSe QDs, and the advocated view is rooted in the results of ab initio studies in both energy and time domains. As a new type of material, semiconductor QDs represent the borderline between chemistry and physics, exhibiting both molecular and bulk-like properties. Similar to atoms and molecules, the electronic spectra of QD show discrete bands. Just as bulk semiconductors, QDs comprise multiple copies of the elementary unit cell, and are characterized by valence and conduction bands. The electron-phonon coupling in QDs is weaker than in molecules, but stronger than in bulk semiconductors. Unlike either material, the QD properties can be tuned continuously by changing QD size and shape. The molecular and bulk points of view often lead to contradicting conclusions. For example, the molecular view suggests that the excitations in QDs should exhibit strong electron-correlation (excitonic) effects, and that the electron-phonon relaxation should be slow due to the discrete nature of the optical bands and the mismatch of the electronic energy gaps with vibrational frequencies. In contrast, a finite-size limit of bulk properties indicates that the kinetic energy of quantum confinement should be significantly greater than excitonic effects and that the electron-phonon relaxation inside the quasi-continuous bands should be efficient. Such qualitative differences have generated heated discussions in the literature. The great potential of QDs for a variety of applications, including photovoltaics, spintronics, lasers, light-emitting diodes, and field-effect transistors makes it crutual to settle the debates. By synthesizing different viewpoints and presenting a unified atomistic picture of the excited state processes, our ab initio analysis clarifies the controversies

  4. Iii-V Compound Multiple Quantum Well Based Modulator and Switching Devices.

    NASA Astrophysics Data System (ADS)

    Hong, Songcheol

    A general formalism to study the absorption and photocurrent in multiple quantum well is provided with detailed consideration of quantum confined Stark shift, exciton binding energy, line broadening, tunneling, polarization, and strain effects. Results on variation of exciton size, binding energies and transition energies as a function electric field and well size have been presented. Inhomogeneous line broadening of exciton lines due to interface roughness, alloy disorder and well to well size fluctuation is calculated. The potential of material tailoring by introducing strain for specific optical response is discussed. Theoretical and experimental results on excitonic and band-to-band absorption spectra in strained multi-quantum well structures are shown. I also report on polarization dependent optical absorption for excitonic and interband transitions in lattice matched and strained multiquantum well structures in presence of transverse electric field. Photocurrent in a p-i(MQW)-n diode with monochromatic light is examined with respect to different temperatures and intensities. The negative resistance of I-V characteristic of the p-i-n diode is based on the quantum confined Stark effect of the heavy hole excitonic transition in a multiquantum well. This exciton based photocurrent characteristic allows efficient switching. A general purpose low power optical logic device using the controller-modulator concept bas been proposed and realized. The controller is a heterojunction phototransistor with multiquantum wells in the base-collector depletion region. This allows an amplified photocurrent controlled voltage feedback with low light intensity levels. Detailed analysis of the sensitivity of this device in various modes of operation is studied. Studies are also presented on the cascadability of the device as well as its integrating -thresholding properties. A multiquantum well heterojunction bipolar transistor (MHBT), which has N^+ -p^+-i(MQW)-N structure has been

  5. Optical Properties of GaN Nanorods Containing a Single or Multiple InGaN Quantum Wells

    NASA Astrophysics Data System (ADS)

    Zhuang, Yi D.; Lis, Szymon; Bruckbauer, Jochen; O'Kane, Simon E. J.; Shields, Philip A.; Edwards, Paul R.; Sarma, Jayanta; Martin, Robert W.; Allsopp, Duncan W. E.

    2013-08-01

    Measurements of light emission from GaN nanorods of diameter between 80 and 350 nm, containing either a three-well multiple InGaN quantum well or a single quantum well, have been performed by photoluminescence (PL) and cathodoluminescence (CL) hyperspectral imaging. The PL underwent a Stark shift to the blue as the nanorod diameter was reduced, indicating substantial relaxation of the compressive strain in the quantum wells. The intensity of the nanorod emission per unit area can exceed that of the planar starting material. The CL measurements revealed that the wavelength of the quantum well emission varied with radial position in the nanorod. Simulations by a modal expansion method revealed that the light extraction efficiency varies with radial position and the variation is dependent on nanorod diameter. Finite difference time domain simulations showed that Bloch mode formation in the buffer layer below the nanorods impacts on the light extraction.

  6. Use of external cavity quantum cascade laser compliance voltage in real-time trace gas sensing of multiple chemicals

    SciTech Connect

    Phillips, Mark C.; Taubman, Matthew S.; Kriesel, Jason M.

    2015-02-08

    We describe a prototype trace gas sensor designed for real-time detection of multiple chemicals. The sensor uses an external cavity quantum cascade laser (ECQCL) swept over its tuning range of 940-1075 cm-1 (9.30-10.7 µm) at a 10 Hz repetition rate.

  7. Long term operation of high quantum efficiency GaAs(Cs,O) photocathodes using multiple recleaning by atomic hydrogen

    NASA Astrophysics Data System (ADS)

    Orlov, D. A.; Krantz, C.; Wolf, A.; Jaroshevich, A. S.; Kosolobov, S. N.; Scheibler, H. E.; Terekhov, A. S.

    2009-09-01

    Atomic hydrogen, produced by thermal dissociation of H2 molecules inside a hot tungsten capillary, is shown to be an efficient tool for multiple recleaning of degraded surfaces of high quantum efficiency transmission-mode GaAs photocathodes within an ultrahigh vacuum (UHV) multichamber photoelectron gun. Ultraviolet quantum yield photoemission spectroscopy has been used to study the removal of surface pollutants and the degraded (Cs,O)-activation layer during the cleaning procedure. For photocathodes grown by the liquid-phase epitaxy technique, the quantum efficiency is found to be stable at about 20% over a large number of atomic hydrogen cleaning cycles. A slow degradation of the quantum efficiency is observed for photocathodes grown by metal-organic chemical vapor deposition, although they reached a higher initial quantum efficiency of about 30%-35%. Study of the spatial distributions of photoluminescence intensity on these photocathodes proved that this overall degradation is likely due to insertion of a dislocation network into the mechanically strained photocathode heterostructures during multiple heating cycles and is not due to the atomic hydrogen treatment itself.

  8. High Contrast Fabry-Perot Multiple Quantum Well Modulators and Systems.

    NASA Astrophysics Data System (ADS)

    Cheung, Siu Kwan

    Multiple Quantum Well (MQW) symmetric Fabry-Perot optical modulators, which utilize field-induced changes in optical absorption and index of refraction due to the Quantum Confined Stark Effect (QCSE), are presented using InGaAs/GaAs system. An on/off contrast ratio exceeding 1200:1 has been obtained using MBE-grown symmetric Fabry -Perot structure which consists of two AlAs/GaAs quarter -wavelength dielectric mirrors and an InGaAs/GaAs rectangular MQW cavity. A tuning range of about 10 nm has been observed for an applied voltage change of ~15 V. Theoretical and experimental studies, including the excitonic absorption in MQW layers, QCSE, optical characterization and device performance, and system modeling are presented. Analytic expressions have been obtained for the optimal design of the symmetric Fabry-Perot modulators. The calculations are based on the optical transfer matrix and the two effective interfaces approach under the plane wave approximation. Optical characterizations and measurements using Spectrophotometer, Variable Angle Spectroscopic Ellipsometry (VASE) and computer -controlled Argon-pumped Ti:Sapphire laser measuring setup are described. Comparisons between theoretical and experimental results indicate a 0.037% deviation of the Fabry-Perot mode for the nontunable structure with projected dynamic range of 38.7 dB and a 0.2% deviation for the tunable modulator from the calculated results. The good matchings of the experimental and calculated Fabry-Perot modes indicate the validity of the theoretical models. Related applications, including the design and performance study of Heterostructure Acoustic Charge Transport Spatial Light Modulators (HACT/SLMs), tunable narrowband optical filters and reflectivity-tunable vertical surface emitting laser structures, are also presented.

  9. Phase control of Goos-Hänchen shift via biexciton coherence in a multiple quantum well

    NASA Astrophysics Data System (ADS)

    Asadpour, Seyyed Hossein; Nasehi, Rajab; Soleimani, H. Rahimpour; Mahmoudi, M.

    2015-09-01

    The behavior of the Goos-Hänchen (GH) shifts of the reflected and transmitted probe and signal pulses through a cavity containing four-level GaAs/AlGaAs multiple quantum wells with 15 periods of 17.5 nm GaAs wells and 15-nm Al0.3Ga0.7As barriers is theoretically discussed. The biexciton coherence set up by two coupling fields can induce the destructive interference to control the absorption and gain properties of probe field under appropriate conditions. It is realized that for the specific values of the intensities and the relative phase of applied fields, the simultaneous negative or positive GH shift in the transmitted and reflected light beam can be obtained via amplification in a probe light. It is found that by adjusting the controllable parameters, the GH shifts can be switched between the large positive and negative values in the medium. Moreover, the effect of exciton spin relaxation on the GH shift has also been discussed. We find that the exciton spin relaxation can manipulate the behavior of GH shift in the reflected and transmitted probe beam through the cavity. We show that by controlling the incident angles of probe beam and under certain conditions, the GH shifts in the reflected and transmitted probe beams can become either negative or positive corresponding to the superluminal or subluminal light propagation. Our proposed model may supply a new prospect in technological applications for the light amplification in optical sensors working on quantum coherence impacts in solid-state systems.

  10. Bias Selectable Dual Band AlGaN Ultra-violet Detectors

    NASA Technical Reports Server (NTRS)

    Yan, Feng; Miko, Laddawan; Franz, David; Guan, Bing; Stahle, Carl M.

    2007-01-01

    Bias selectable dual band AlGaN ultra-violet (UV) detectors, which can separate UV-A and UV-B using one detector in the same pixel by bias switching, have been designed, fabricated and characterized. A two-terminal n-p-n photo-transistor-like structure was used. When a forward bias is applied between the top electrode and the bottom electrode, the detectors can successfully detect W-A and reject UV-B. Under reverse bias, they can detect UV-B and reject UV-A. The proof of concept design shows that it is feasible to fabricate high performance dual-band UV detectors based on the current AlGaN material growth and fabrication technologies.

  11. Status of AlGaN based focal plane arrays for UV solar blind detection

    NASA Astrophysics Data System (ADS)

    Reverchon, Jean-Luc; Mazzeo, Giovanni; Dussaigne, Amélie; Duboz, Jean-Yves

    2005-10-01

    The fast development of nitrides has given the opportunity to investigate AlGaN as a material for ultraviolet solar blind detection in competition with technologies based on photocathodes, MCP intensifiers, back thinned CCD or hybrid CMOS focal plane arrays. All of the them must be associated to UV blocking filters. These new detectors present both an intrinsic spectral selectivity and an extremely low dark current at room temperature. First we will present the ultimate properties of the AlGaN based devices. These spectral properties are analysed in regards to the sharp cut off required for solar blind detection around 280nm, and we will quantify how the stringent difficulties to achieve solar blind filters can be reduced. We also investigated the electrical capabilities of Schottky diodes or Metal-Semiconductor-Metal (MSM) technologies to detect extremely low UV signal. We will especially present results from a linear array based on a CCD readout multiplexor.

  12. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect

    Kuppulingam, B. Singh, Shubra Baskar, K.

    2014-04-24

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  13. Influence of substrate miscut angle on surface morphology and luminescence properties of AlGaN

    SciTech Connect

    Kusch, Gunnar Edwards, Paul R.; Bruckbauer, Jochen; Martin, Robert W.; Li, Haoning; Parbrook, Peter J.; Sadler, Thomas C.

    2014-03-03

    The influence of substrate miscut on Al{sub 0.5}Ga{sub 0.5} N layers was investigated using cathodoluminescence (CL) hyperspectral imaging and secondary electron imaging in an environmental scanning electron microscope. The samples were also characterized using atomic force microscopy and high resolution X-ray diffraction. It was found that small changes in substrate miscut have a strong influence on the morphology and luminescence properties of the AlGaN layers. Two different types are resolved. For low miscut angle, a crack-free morphology consisting of randomly sized domains is observed, between which there are notable shifts in the AlGaN near band edge emission energy. For high miscut angle, a morphology with step bunches and compositional inhomogeneities along the step bunches, evidenced by an additional CL peak along the step bunches, are observed.

  14. Study of multiple InAs/GaAs quantum-well structures by electroreflectance spectroscopy

    SciTech Connect

    Bolshakov, A. S. Chaldyshev, V. V. Babichev, A. V.; Kudryashov, D. A.; Gudovskikh, A. S.; Morozov, I. A.; Sobolev, M. S.; Nikitina, E. V.

    2015-11-15

    A periodic Bragg heterostructure with three ultrathin InAs/GaAs quantum wells in a period is fabricated and studied. The splitting energy of exciton transitions in quantum wells is determined by the electroreflectance- spectroscopy method and numerical quantum-mechanical calculation. The significant influence of interference effects on individual peak areas in the electroreflectance spectrum is detected.

  15. Sorting photon wave packets using temporal-mode interferometry based on multiple-stage quantum frequency conversion

    NASA Astrophysics Data System (ADS)

    Reddy, D. V.; Raymer, M. G.; McKinstrie, C. J.

    2015-01-01

    All classical and quantum technologies that encode in and retrieve information from optical fields rely on the ability to selectively manipulate orthogonal field modes of light. Such manipulation can be achieved with high selectivity for polarization modes and transverse-spatial modes. For the time-frequency degree of freedom, this could efficiently be achieved for a limited choice of approximately orthogonal modes, i.e., nonoverlapping bins in time or frequency. We recently proposed a method that surmounts the selectivity barrier for sorting arbitrary orthogonal temporal modes [Opt. Lett. 39, 2924 (2014)., 10.1364/OL.39.002924] using cascaded interferometric quantum frequency conversion in nonlinear optical media. We call this method temporal-mode interferometry, as it has a close resemblance to the well-known separated-fields atomic interferometry method introduced by Ramsey. The method has important implications for quantum memories, quantum dense coding, quantum teleportation, and quantum key distribution. Here we explore the inner workings of the method in detail, and extend it to multiple stages with a concurrent asymptotic convergence of temporal-mode selectivity to unity. We also complete our analysis of pump-chirp compensation to counter pump-induced nonlinear phase modulation in four-wave mixing implementations.

  16. Controllably releasing long-lived quantum memory for photonic polarization qubit into multiple spatially-separate photonic channels

    NASA Astrophysics Data System (ADS)

    Chen, Lirong; Xu, Zhongxiao; Zeng, Weiqing; Wen, Yafei; Li, Shujing; Wang, Hai

    2016-09-01

    We report an experiment in which long-lived quantum memories for photonic polarization qubits (PPQs) are controllably released into any one of multiple spatially-separate channels. The PPQs are implemented with an arbitrarily-polarized coherent signal light pulses at the single-photon level and are stored in cold atoms by means of electromagnetic-induced-transparency scheme. Reading laser pulses propagating along the direction at a small angle relative to quantum axis are applied to release the stored PPQs into an output channel. By changing the propagating directions of the read laser beam, we controllably release the retrieved PPQs into 7 different photonic output channels, respectively. At a storage time of δt = 5 μs, the least quantum-process fidelity in 7 different output channels is ~89%. At one of the output channels, the measured maximum quantum-process fidelity for the PPQs is 94.2% at storage time of δt = 0.85 ms. At storage time of 6 ms, the quantum-process fidelity is still beyond the bound of 78% to violate the Bell’s inequality. The demonstrated controllable release of the stored PPQs may extend the capabilities of the quantum information storage technique.

  17. Controllably releasing long-lived quantum memory for photonic polarization qubit into multiple spatially-separate photonic channels

    PubMed Central

    Chen, Lirong; Xu, Zhongxiao; Zeng, Weiqing; Wen, Yafei; Li, Shujing; Wang, Hai

    2016-01-01

    We report an experiment in which long-lived quantum memories for photonic polarization qubits (PPQs) are controllably released into any one of multiple spatially-separate channels. The PPQs are implemented with an arbitrarily-polarized coherent signal light pulses at the single-photon level and are stored in cold atoms by means of electromagnetic-induced-transparency scheme. Reading laser pulses propagating along the direction at a small angle relative to quantum axis are applied to release the stored PPQs into an output channel. By changing the propagating directions of the read laser beam, we controllably release the retrieved PPQs into 7 different photonic output channels, respectively. At a storage time of δt = 5 μs, the least quantum-process fidelity in 7 different output channels is ~89%. At one of the output channels, the measured maximum quantum-process fidelity for the PPQs is 94.2% at storage time of δt = 0.85 ms. At storage time of 6 ms, the quantum-process fidelity is still beyond the bound of 78% to violate the Bell’s inequality. The demonstrated controllable release of the stored PPQs may extend the capabilities of the quantum information storage technique. PMID:27667262

  18. High-efficiency blue LEDs with thin AlGaN interlayers in InGaN/GaN MQWs grown on Si (111) substrates

    NASA Astrophysics Data System (ADS)

    Kimura, Shigeya; Yoshida, Hisashi; Ito, Toshihide; Okada, Aoi; Uesugi, Kenjiro; Nunoue, Shinya

    2016-02-01

    We demonstrate high-efficiency blue light-emitting diodes (LEDs) with thin AlGaN interlayers in InGaN/GaN multiquantum wells (MQWs) grown on Si (111) substrates. The peak external quantum efficiency (EQE) ηEQE of 82% at room temperature and the hot/cold factor (HCF) of 94% have been obtained by using the functional thin AlGaN interlayers in the MQWs in addition to reducing threading dislocation densities (TDDs) in the blue LEDs. An HCF is defined as ηEQE(85°C)/ηEQE(25°C). The blue LED structures were grown by metal-organic chemical vapor deposition on Si (111) substrates. The MQWs applied as an active layer have 8- pairs of InGaN/AlyGa1-yN/GaN (0<=y<=1) heterostructures. Thinfilm LEDs were fabricated by removing the Si (111) substrates from the grown layers. It is observed by high-resolution transmission electron microscopy and three-dimensional atom probe analysis that the 1 nm-thick AlyGa1-yN interlayers, whose Al content is y=0.3 or less, are continuously formed. EQE and the HCFs of the LEDs with thin Al0.15Ga0.85N interlayers are enhanced compared with those of the samples without the interlayers in the low-current-density region. We consider that the enhancement is due to both the reduction of the nonradiative recombination centers and the increase of the radiative recombination rate mediated by the strain-induced hole carriers indicated by the simulation of the energy band diagram.

  19. Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

    SciTech Connect

    Malinverni, M. Lamy, J.-M.; Martin, D.; Grandjean, N.; Feltin, E.; Dorsaz, J.; Castiglia, A.; Rossetti, M.; Duelk, M.; Vélez, C.

    2014-12-15

    We demonstrate state-of-the-art p-type (Al)GaN layers deposited at low temperature (740 °C) by ammonia molecular beam epitaxy (NH{sub 3}-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGaN quantum well active region. Typical p-type GaN resistivities and contact resistances are 0.4 Ω cm and 5 × 10{sup −4} Ω cm{sup 2}, respectively. As a test bed, we fabricated a hybrid laser structure emitting at 400 nm combining n-type AlGaN cladding and InGaN active region grown by metal-organic vapor phase epitaxy, with the p-doped waveguide and cladding layers grown by NH{sub 3}-MBE. Single-mode ridge-waveguide LD exhibits a threshold voltage as low as 4.3 V for an 800 × 2 μm{sup 2} ridge dimension and a threshold current density of ∼5 kA cm{sup −2} in continuous wave operation. The series resistance of the device is 6 Ω and the resistivity is 1.5 Ω cm, confirming thereby the excellent electrical properties of p-type Al{sub 0.06}Ga{sub 0.94}N:Mg despite the low growth temperature.

  20. Optically detected magnetic resonance study of a type-II GaAs/AlAs multiple quantum well

    NASA Astrophysics Data System (ADS)

    van Kesteren, H. W.; Cosman, E. C.; Greidanus, F. J. A. M.; Dawson, P.; Moore, K. J.; Foxon, C. T.

    1988-07-01

    In a type-II GaAs/AlAs multiple quantum well three optically detected magnetic resonance lines and two level anticrossings were observed. Two of the resonance lines and the two level anticrossings are in agreement with the electronic level scheme of the heavy-hole exciton. The third resonance line is in accordance with a magnetic spin resonance of an unbound electron. These optically detected magnetic resonance measurements open up the possibility to obtain detailed information about the excitons in and the band structure of type-II quantum wells.

  1. Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

    DOE PAGES

    Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; ...

    2016-09-19

    Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and the light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polarization engineered tunnel junctions for ultra-wide bandgap AlGaN (Al mole fraction >50%) materials towards highly efficient UV LEDs. We demonstrate that polarization-induced three dimensional charge is beneficial in reducing tunneling barriers especially for high composition AlGaN tunnel junctions. In addition, the design of graded tunnel junction structures could lead to low tunneling resistance below 10–3 Ω cm2 and low voltage consumptionmore » below 1 V (at 1 kA/cm2) for high composition AlGaN tunnel junctions. Experimental demonstration of 292 nm emission was achieved through non-equilibrium hole injection into wide bandgap materials with bandgap energy larger than 4.7 eV, and detailed modeling of tunnel junctions shows that they can be engineered to have low resistance and can enable efficient emitters in the UV-C wavelength range.« less

  2. Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

    SciTech Connect

    Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Rajan, Siddharth

    2016-09-19

    Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and the light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polarization engineered tunnel junctions for ultra-wide bandgap AlGaN (Al mole fraction >50%) materials towards highly efficient UV LEDs. We demonstrate that polarization-induced three dimensional charge is beneficial in reducing tunneling barriers especially for high composition AlGaN tunnel junctions. In addition, the design of graded tunnel junction structures could lead to low tunneling resistance below 10–3 Ω cm2 and low voltage consumption below 1 V (at 1 kA/cm2) for high composition AlGaN tunnel junctions. Experimental demonstration of 292 nm emission was achieved through non-equilibrium hole injection into wide bandgap materials with bandgap energy larger than 4.7 eV, and detailed modeling of tunnel junctions shows that they can be engineered to have low resistance and can enable efficient emitters in the UV-C wavelength range.

  3. Relaxation of compressively strained AlGaN by inclined threading dislocations.

    SciTech Connect

    Follstaedt, David Martin; Lee, Stephen Roger; Crawford, Mary Hagerott; Provencio, Paula Polyak; Allerman, Andrew Alan; Floro, Jerrold Anthony

    2005-06-01

    Transmission electron microscopy and x-ray diffraction were used to assess the microstructure and strain of Al{sub x}Ga{sub 1?x}N(x = 0.61-0.64) layers grown on AlN. The compressively-strained AlGaN is partially relaxed by inclined threading dislocations, similar to observations on Si-doped AlGaN by P. Cantu, F. Wu, P. Waltereit, S. Keller, A. E. Romanov, U. K. Mishra, S. P. DenBaars, and J. S. Speck [Appl. Phys. Lett. 83, 674 (2003) ]; however, in our material, the dislocations bend before the introduction of any Si. The bending may be initiated by the greater lattice mismatch or the lower dislocation density of our material, but the presence of Si is not necessarily required. The relaxation by inclined dislocations is quantitatively accounted for with the model of A. E. Romanov and J. S. Speck [Appl. Phys. Lett. 83, 2569 (2003)], and we demonstrate the predicted linear dependence of relaxation on layer thickness. Notably, such relaxation was not found in tensile strained AlGaN grown on GaN [J. A. Floro, D. M. Follstaedt, P. Provencio, S. J. Hearne, and S. R. Lee, J. Appl. Phys. 96, 7087 (2004)], even though the same mechanism appears applicable.

  4. Relaxation of compressively-strained AlGaN by inclined threading dislocations

    NASA Astrophysics Data System (ADS)

    Follstaedt, D. M.; Lee, S. R.; Provencio, P. P.; Allerman, A. A.; Floro, J. A.; Crawford, M. H.

    2005-09-01

    Transmission electron microscopy and x-ray diffraction were used to assess the microstructure and strain of AlxGa1-xN(x=0.61-0.64) layers grown on AlN. The compressively-strained AlGaN is partially relaxed by inclined threading dislocations, similar to observations on Si-doped AlGaN by P. Cantu, F. Wu, P. Waltereit, S. Keller, A. E. Romanov, U. K. Mishra, S. P. DenBaars, and J. S. Speck [Appl. Phys. Lett. 83, 674 (2003)]; however, in our material, the dislocations bend before the introduction of any Si. The bending may be initiated by the greater lattice mismatch or the lower dislocation density of our material, but the presence of Si is not necessarily required. The relaxation by inclined dislocations is quantitatively accounted for with the model of A. E. Romanov and J. S. Speck [Appl. Phys. Lett. 83, 2569 (2003)], and we demonstrate the predicted linear dependence of relaxation on layer thickness. Notably, such relaxation was not found in tensile strained AlGaN grown on GaN [J. A. Floro, D. M. Follstaedt, P. Provencio, S. J. Hearne, and S. R. Lee, J. Appl. Phys. 96, 7087 (2004)], even though the same mechanism appears applicable.

  5. Novel selective area growth (SAG) method for regularly arranged AlGaN nanocolumns using nanotemplates

    NASA Astrophysics Data System (ADS)

    Yamano, Koji; Kishino, Katsumi; Sekiguchi, Hiroto; Oto, Takao; Wakahara, Akihiro; Kawakami, Yoichi

    2015-09-01

    We have demonstrated a novel selective area growth (SAG) method based on rf-plasma-assisted molecular beam epitaxy for AlGaN nanocolumns using nanotemplates. The nanotemplates, which were prepared on a metal-organic chemical vapor deposition-GaN template, consisted of a triangular lattice of nanopillars with a lattice constant from 200 to 400 nm. For nanopillars with a lattice constant of 400 nm, the gap width between adjacent pillars was varied from 30 to 130 nm. The well-controlled SAG of GaN nanocolumns was achieved on nanopillar arrays with gap widths of less than approximately 45 nm. The beam shadowing effect, which was induced in the high-density nanopillar arrays with small gaps, was a key mechanism in the SAG. This gap width condition for SAG was satisfied for lattice constants from 200 to 400 nm. Using the nanotemplate SAG technology, the SAG of AlGaN nanocolumn arrays was achieved for Al compositions of 0.13, 0.22, 0.43, and 1. Single-peak photoluminescence (PL) spectra of AlGaN were observed, whose wavelengths were close to the calculated bandgap wavelengths using the bandgaps of AlN (6.015 eV) and GaN (3.39 eV) and a bowing parameter of 0.98 eV.

  6. Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

    SciTech Connect

    Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Rajan, Siddharth

    2016-09-19

    Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and the light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polarization engineered tunnel junctions for ultra-wide bandgap AlGaN (Al mole fraction >50%) materials towards highly efficient UV LEDs. We demonstrate that polarization-induced three dimensional charge is beneficial in reducing tunneling barriers especially for high composition AlGaN tunnel junctions. In addition, the design of graded tunnel junction structures could lead to low tunneling resistance below 10–3 Ω cm2 and low voltage consumption below 1 V (at 1 kA/cm2) for high composition AlGaN tunnel junctions. Experimental demonstration of 292 nm emission was achieved through non-equilibrium hole injection into wide bandgap materials with bandgap energy larger than 4.7 eV, and detailed modeling of tunnel junctions shows that they can be engineered to have low resistance and can enable efficient emitters in the UV-C wavelength range.

  7. Strain and defects in Si-doped (Al)GaN epitaxial layers

    NASA Astrophysics Data System (ADS)

    Forghani, Kamran; Schade, Lukas; Schwarz, Ulrich T.; Lipski, Frank; Klein, Oliver; Kaiser, Ute; Scholz, Ferdinand

    2012-11-01

    Si is the most common dopant in (Al)GaN based devices acting as a donor. It has been observed that Si induces tensile strain in (Al)GaN films, which leads to an increasing tendency for cracking of such films with the increase of Si content and/or the increase of Al content. Based on x-ray investigations, the Si-doped films have a larger in-plane lattice constant than their undoped buffer layers, indicating involvement of a mechanism other than the change of lattice constants expected from an alloying effect. In this work, we present a model about Si dislocation interaction while debating other proposed models in the literature. According to our model, Si atoms are attracted to the strain dipole of edge-type dislocations in (Al)GaN films. It is expected that Si is more incorporated on that side of the dislocation, which is under compression leading to the formation of off-balanced dipoles with reduced compressive component. In response to such off-balanced dipoles—appearing as tensile dominant strain dipoles—the dislocation lines climb in order to accommodate the excess tensile strain. However, this dislocation climb mechanism is hindered by forces exerted by vacancies created due to the climb process. Accordingly, we have observed a lower strain level in our Si doped layers when they contain fewer dislocations. These findings were further supported by x-ray diffraction, transmission electron microscopy, and micro-photoluminescence investigations.

  8. The role of surface kinetics on composition and quality of AlGaN

    NASA Astrophysics Data System (ADS)

    Bryan, Isaac; Bryan, Zachary; Mita, Seiji; Rice, Anthony; Hussey, Lindsay; Shelton, Christopher; Tweedie, James; Maria, Jon-Paul; Collazo, Ramón; Sitar, Zlatko

    2016-10-01

    Metal-polar, Al-rich AlGaN films were grown on both single crystalline AlN and sapphire substrates. The role of surface morphology and surface kinetics on AlGaN composition is presented. With the reduced dislocation density of the films grown on AlN substrates, atomically smooth bilayer stepped surfaces are achieved with RMS roughness of less than 50 pm for a 5×5 μm2 AFM scan area. By controlling the surface supersaturation through adjusting the growth rate, a transition from 2D nucleation to step flow was observed. The critical misorientation angle for step-bunching in nominal Al0.70Ga0.30N grown with a growth rate of 600 nm/h on AlN substrates was found to be 0.4°. The composition of bilayer stepped AlGaN was strongly dependent on substrate misorientation angle, where a compositional variation by a factor of two for a change in misorientation angle from 0.05 to 0.40° was observed; this is explained by the different surface diffusion lengths of Ga and Al. Step-bunching resulted in strong compositional inhomogeneity as observed by photoluminescence and scanning transmission electron microscopy studies.

  9. Thermal degradation in a trimodal PDMS network by 1H Multiple Quantum NMR

    SciTech Connect

    Giuliani, J R; Gjersing, E L; Chinn, S C; Jones, T V; Wilson, T S; Alviso, C T; Herberg, J L; Pearson, M A; Maxwell, R S

    2007-06-06

    Thermal degradation of a filled, crosslinked siloxane material synthesized from PDMS chains of three different average molecular weights and with two different crosslinking species has been studied by {sup 1}H Multiple Quantum (MQ) NMR methods. Multiple domains of polymer chains were detected by MQ NMR exhibiting Residual Dipolar Coupling (<{Omega}{sub d}>) values of 200 Hz and 600 Hz, corresponding to chains with high average molecular weight between crosslinks and chains with low average molecular weight between crosslinks or near the multifunctional crosslinking sites. Characterization of the <{Omega}{sub d}> values and changes in <{Omega}{sub d}> distributions present in the material were studied as a function of time at 250 C and indicates significant time dependent degradation. For the domains with low <{Omega}{sub d}>, a broadening in the distribution was observed with aging time. For the domain with high <{Omega}{sub d}>, increases in both the mean <{Omega}{sub d}> and the width in <{Omega}{sub d}> were observed with increasing aging time. Isothermal Thermal Gravimetric Analysis (TGA) reveals a 3% decrease in weight over 20 hours of aging at 250 C. Degraded samples also were analyzed by traditional solid state {sup 1}H NMR techniques and offgassing products were identified by Solid Phase MicroExtraction followed by Gas Chromatography-Mass Spectrometry (SPME GC-MS). The results, which will be discussed here, suggest that thermal degradation proceeds by complex competition between oxidative chain scissioning and post-curing crosslinking that both contribute to embrittlement.

  10. Thermal degradation in a trimodal poly(dimethylsiloxane) network studied by (1)H multiple quantum NMR.

    PubMed

    Giuliani, Jason R; Gjersing, Erica L; Chinn, Sarah C; Jones, Ticora V; Wilson, Thomas S; Alviso, Cynthia T; Herberg, Julie L; Pearson, Mark A; Maxwell, Robert S

    2007-11-15

    Thermal degradation of a filled, cross-linked siloxane material synthesized from poly(dimethylsiloxane) chains of three different average molecular weights and with two different cross-linking species has been studied by (1)H multiple quantum (MQ) NMR methods. Multiple domains of polymer chains were detected by MQ NMR exhibiting residual dipolar coupling () values of 200 and 600 Hz, corresponding to chains with high average molecular weight between cross-links and chains with low average molecular weight between cross-links or near the multifunctional cross-linking sites. Characterization of the values and changes in distributions present in the material were studied as a function of time at 250 degrees C and indicate significant time-dependent degradation. For the domains with low , a broadening in the distribution was observed with aging time. For the domain with high , increases in both the mean and the width in were observed with increasing aging time. Isothermal thermal gravimetric analysis reveals a 3% decrease in weight over 20 h of aging at 250 degrees C. Degraded samples also were analyzed by traditional solid-state (1)H NMR techniques, and off-gassing products were identified by solid-phase microextraction followed by gas chromatography-mass spectrometry. The results, which will be discussed here, suggest that thermal degradation proceeds by complex competition between oxidative chain scissioning and postcuring cross-linking that both contribute to embrittlement.

  11. Investigation of enzymatic C-P bond formation using multiple quantum HCP nuclear magnetic resonance spectroscopy.

    PubMed

    Hu, Kaifeng; Werner, Williard J; Allen, Kylie D; Wang, Susan C

    2015-04-01

    The biochemical mechanism for the formation of the C-P-C bond sequence found in l-phosphinothricin, a natural product with antibiotic and herbicidal activity, remains unclear. To obtain further insight into the catalytic mechanism of PhpK, the P-methyltransferase responsible for the formation of the second C-P bond in l-phosphinothricin, we utilized a combination of stable isotopes and two-dimensional nuclear magnetic resonance spectroscopy. Exploiting the newly emerged Bruker QCI probe (Bruker Corp.), we specifically designed and ran a (13) C-(31) P multiple quantum (1) H-(13) C-(31) P (HCP) experiment in (1) H-(31) P two-dimensional mode directly on a PhpK-catalyzed reaction mixture using (13) CH3 -labeled methylcobalamin as the methyl group donor. This method is particularly advantageous because minimal sample purification is needed to maximize product visualization. The observed 3:1:1:3 multiplet specifically and unequivocally illustrates direct bond formation between (13) CH3 and (31) P. Related nuclear magnetic resonance experiments based upon these principles may be designed for the study of enzymatic and/or synthetic chemical reaction mechanisms.

  12. Barrier potential design criteria in multiple-quantum-well-based solar-cell structures

    NASA Technical Reports Server (NTRS)

    Mohaidat, Jihad M.; Shum, Kai; Wang, W. B.; Alfano, R. R.

    1994-01-01

    The barrier potential design criteria in multiple-quantum-well (MQW)-based solar-cell structures is reported for the purpose of achieving maximum efficiency. The time-dependent short-circuit current density at the collector side of various MQW solar-cell structures under resonant condition was numerically calculated using the time-dependent Schroedinger equation. The energy efficiency of solar cells based on the InAs/Ga(y)In(1-y)As and GaAs/Al(x)Ga(1-x)As MQW structues were compared when carriers are excited at a particular solar-energy band. Using InAs/Ga(y)In(1-y)As MQW structures it is found that a maximum energy efficiency can be achieved if the structure is designed with barrier potential of about 450 meV. The efficiency is found to decline linearly as the barrier potential increases for GaAs/Al(x)Ga(1-x)As MQW-structure-based solar cells.

  13. Strained germanium-tin multiple quantum well microdisk resonators towards a light source on silicon

    NASA Astrophysics Data System (ADS)

    Shang, Colleen K.; Chen, Robert; Gupta, Suyog; Huang, Yi-Chiau; Huo, Yijie; Sanchez, Errol; Kim, Yihwan; Kamins, Theodore I.; Saraswat, Krishna C.; Harris, James S.

    2015-02-01

    Although the development of a monolithically-integrated, silicon-compatible light source has been traditionally limited by the indirect band gaps of Group IV materials, germanium-tin (Ge1-xSnx) is predicted to exhibit direct band gap behavior. In pseudomorphic conditions with materials of smaller lattice constant, the accumulation of compressive strain in Ge1-xSnx counteracts this behavior to prevent the direct band gap transition. One possible approach to compensate for this compressive strain is to introduce tensile strain into the system, which can be achieved by applying an external stressing agent to post-fabricated devices. We describe a suspended Ge0:922Sn0:078 multiple quantum well microdisk resonator cavity strained by 140 nm of highly compressively stressed silicon nitride. Raman shifts and photoluminescence redshifts indicate that an additional 0.23-0.30% strain can be induced in these microdisks with this approach. The ability to tune the optical performance of these resonator structures by strain engineering has the potential to enable the development of low threshold Ge1-xSnx-based lasers on Si.

  14. Germanium-tin interdiffusion in strained Ge/GeSn multiple-quantum-well structure

    NASA Astrophysics Data System (ADS)

    Wang, Wei; Dong, Yuan; Zhou, Qian; Tok, Eng Soon; Yeo, Yee-Chia

    2016-06-01

    The thermal stability and germanium-tin (Ge-Sn) interdiffusion properties were studied in epitaxial Ge/GeSn multiple-quantum-well (MQW) structure. No obvious interdiffusion was observed for annealing temperatures of 300 °C or below, while observable interdiffusion occurred for annealing temperatures of 380 °C and above. High-resolution x-ray diffraction was used to obtain the interdiffusion coefficient by analyzing the decrease rate of Ge/GeSn periodic satellite peaks. The interdiffusion coefficient is much higher, and the activation enthalpy of 1.21 eV is substantially lower in Ge/GeSn MQW structure than that previously reported in silicon-germanium (Si-Ge) systems. When the annealing temperature is increased to above 500 °C, Ge-Sn interdiffusion becomes severe. Some small pits appear on the surface, which should be related to Sn out-diffusion to the Ge cap layer, followed by Sn desorption from the top surface. This work provides insights into the Ge-Sn interdiffusion and Sn segregation behaviors in Ge/GeSn MQW structure, and the thermal budget that may be used for fabrication of devices comprising Ge/GeSn heterostructures.

  15. Barrier potential design criteria in multiple-quantum-well-based solar-cell structures

    NASA Technical Reports Server (NTRS)

    Mohaidat, Jihad M.; Shum, Kai; Wang, W. B.; Alfano, R. R.

    1994-01-01

    The barrier potential design criteria in multiple-quantum-well (MQW)-based solar-cell structures is reported for the purpose of achieving maximum efficiency. The time-dependent short-circuit current density at the collector side of various MQW solar-cell structures under resonant condition was numerically calculated using the time-dependent Schroedinger equation. The energy efficiency of solar cells based on the InAs/Ga(y)In(1-y)As and GaAs/Al(x)Ga(1-x)As MQW structues were compared when carriers are excited at a particular solar-energy band. Using InAs/Ga(y)In(1-y)As MQW structures it is found that a maximum energy efficiency can be achieved if the structure is designed with barrier potential of about 450 meV. The efficiency is found to decline linearly as the barrier potential increases for GaAs/Al(x)Ga(1-x)As MQW-structure-based solar cells.

  16. Ultrafast biexciton spectroscopy in semiconductor quantum dots: evidence for early emergence of multiple-exciton generation

    PubMed Central

    Choi, Younghwan; Sim, Sangwan; Lim, Seong Chu; Lee, Young Hee; Choi, Hyunyong

    2013-01-01

    Understanding multiple-exciton generation (MEG) in quantum dots (QDs) requires in-depth measurements of transient exciton dynamics. Because MEG typically faces competing ultrafast energy-loss intra-band relaxation, it is of central importance to investigate the emerging time-scale of the MEG kinetics. Here, we present ultrafast spectroscopic measurements of the MEG in PbS QDs via probing the ground-state biexciton transients. Specifically, we directly compare the biexciton spectra with the single-exciton ones before and after the intra-band relaxation. Early emergence of MEG is evidenced by observing transient Stark shift and quasi-instantaneous linewidth broadening, both of which take place before the intra-band relaxation. Photon-density-dependent study shows that the broadened biexciton linewidth strongly depends on the MEG-induced extra-exciton generation. Long after the intra-band relaxation, the biexciton broadening is small and the single-exciton state filling is dominant. PMID:24220495

  17. Formation mechanism of highly luminescent silica capsules incorporating multiple hydrophobic quantum dots with various emission wavelengths.

    PubMed

    Li, Chunliang; Murase, Norio

    2013-12-01

    A synthesis process was reconsidered for encapsulating hydrophobic quantum dots (QDs) into silica capsules with high photoluminescent (PL) efficiency. The process comprises three steps: silanization of QD surfaces, seed formation by assembly of the QDs, and coating of the QD seeds with a silica shell. Analysis of the encapsulation mechanism enabled this process to be adapted for application to CdSe-based core-shell QDs with various organic ligands such as oleic acid and with various emission wavelengths. Formation of the seeds is the key step in synthesizing the silica capsules, so that they have high PL efficiency. Due to the differences in QD size and in the affinity of the ligands on their surfaces, the concentration of QDs used in the synthesis must be optimized to maximize emission efficiency. Contrary to an initial assumption, several ligands remained on the QD surfaces even after the QDs were transferred from organic solution to water. This greatly affected the size and PL efficiency of the seeds. Judicious selection of the conditions for seed and silica capsule synthesis resulted in seeds with PL efficiency greater than 70% and in silica capsules encapsulating multiple CdSe/CdZnS QDs with PL efficiency as high as 41%. Silica capsules incorporating QDs with various emission peak wavelengths from green to red were also prepared. The process presented serves as a guideline for encapsulating various types of hydrophobic QDs into silica capsules for biological tagging applications.

  18. Modeling and simulation of magnetic resonance imaging based on intermolecular multiple quantum coherences

    NASA Astrophysics Data System (ADS)

    Cai, Congbo; Dong, Jiyang; Cai, Shuhui; Cheng, En; Chen, Zhong

    2006-11-01

    Intermolecular multiple quantum coherences (iMQCs) have many potential applications since they can provide interaction information between different molecules within the range of dipolar correlation distance, and can provide new contrast in magnetic resonance imaging (MRI). Because of the non-localized property of dipolar field, and the non-linear property of the Bloch equations incorporating the dipolar field term, the evolution behavior of iMQC is difficult to deduce strictly in many cases. In such cases, simulation studies are very important. Simulation results can not only give a guide to optimize experimental conditions, but also help analyze unexpected experimental results. Based on our product operator matrix and the K-space method for dipolar field calculation, the MRI simulation software was constructed, running on Windows operation system. The non-linear Bloch equations are calculated by a fifth-order Cash-Karp Runge-Kutta formulism. Computational time can be efficiently reduced by separating the effects of chemical shifts and strong gradient field. Using this software, simulation of different kinds of complex MRI sequences can be done conveniently and quickly on general personal computers. Some examples were given. The results were discussed.

  19. Optical modes within III-nitride multiple quantum well microdisk cavities

    NASA Astrophysics Data System (ADS)

    Mair, R. A.; Zeng, K. C.; Lin, J. Y.; Jiang, H. X.; Zhang, B.; Dai, L.; Botchkarev, A.; Kim, W.; Morkoç, H.; Khan, M. A.

    1998-03-01

    Optical resonance modes have been observed in optically pumped microdisk cavities fabricated from 50 Å/50 Å GaN/AlxGa1-xN(x˜0.07) and 45 Å/45 Å InxGa1-xN/GaN(x˜0.15) multiple quantum well structures. Microdisks, approximately 9 μm in diameter and regularly spaced every 50 μm, were formed by an ion beam etch process. Individual disks were pumped at 300 and 10 K with 290 nm laser pulses focused to a spot size much smaller than the disk diameter. Optical modes corresponding to (i) the radial mode type with a spacing of 49-51 meV (both TE and TM) and (ii) the Whispering Gallery mode with a spacing of 15-16 meV were observed in the GaN microdisk cavities. The spacings of these modes are consistent with those expected for modes within a resonant cavity of cylindrical symmetry, refractive index, and dimensions of the microdisks under investigation. The GaN-based microdisk cavity is compared with its GaAs counterpart and implications regarding future GaN-based microdisk lasers are discussed.

  20. Recombination Pathways in Green InGaN/GaN Multiple Quantum Wells

    NASA Astrophysics Data System (ADS)

    Lin, Tao; Kuo, Hao Chung; Jiang, Xiao Dong; Feng, Zhe Chuan

    2017-02-01

    This paper reports the transient photoluminescence (PL) properties of an InGaN/GaN multiple quantum well (MQW) light-emitting diode (LED) with green emission. Recombination of localized excitons was proved to be the main microscopic mechanism of green emission in the sample. The PL dynamics were ascribed to two pathways of the exciton recombination, corresponding to the fast decay and the slow decay, respectively. The origins of slow decay and fast decay were assigned to local compositional fluctuations of indium and thickness variations of InGaN layers, respectively. Furthermore, the contributions of two decay pathways to the green PL were found to vary at different emission photon energy. The fraction of fast decay pathway decreased with decreasing photon energy. The slow radiative PL from deep localized exciton recombination suffered less suppression from non-radiative delocalization process, for the higher requested activation energy. All these results supported a clear microscopy mechanism of excitation-emission process of the green MQW LED structure.

  1. Recombination Pathways in Green InGaN/GaN Multiple Quantum Wells.

    PubMed

    Lin, Tao; Kuo, Hao Chung; Jiang, Xiao Dong; Feng, Zhe Chuan

    2017-12-01

    This paper reports the transient photoluminescence (PL) properties of an InGaN/GaN multiple quantum well (MQW) light-emitting diode (LED) with green emission. Recombination of localized excitons was proved to be the main microscopic mechanism of green emission in the sample. The PL dynamics were ascribed to two pathways of the exciton recombination, corresponding to the fast decay and the slow decay, respectively. The origins of slow decay and fast decay were assigned to local compositional fluctuations of indium and thickness variations of InGaN layers, respectively. Furthermore, the contributions of two decay pathways to the green PL were found to vary at different emission photon energy. The fraction of fast decay pathway decreased with decreasing photon energy. The slow radiative PL from deep localized exciton recombination suffered less suppression from non-radiative delocalization process, for the higher requested activation energy. All these results supported a clear microscopy mechanism of excitation-emission process of the green MQW LED structure.

  2. Optimization of TCR and heat transport in group-IV multiple-quantum-well microbolometers

    NASA Astrophysics Data System (ADS)

    Morea, Matthew; Gu, Kevin; Savikhin, Victoria; Fenrich, Colleen S.; Pop, Eric; Harris, James S.

    2016-09-01

    Group-IV semiconductors have the opportunity to have an equivalent or better temperature coefficient of resistance (TCR) than other microbolometer thermistor materials. By using multiple-quantum-well (MQW) structures, their TCR values can be optimized due to a confinement of carriers. Through two approaches - an activation energy approximation and a custom Monte Carlo transfer matrix method - we simulated this effect for a combination of Group-IV semiconductors and their alloys (e.g., SiGe and GeSn) to find the highest possible TCR, while keeping in mind the critical thicknesses of such layers in a MQW epitaxial stack. We calculated the TCR for a critical-thickness-limited Ge0.8Sn0.2/Ge MQW device to be about -1.9 %/K. Although this TCR is lower than similar SiGe/Si MQW thermistors, GeSn offers possible advantages in terms of fabricating suspended devices with its interesting etch-stop properties shown in previous literature. Furthermore, using finite element modeling of heat transport, we looked at another key bolometer parameter: the thermal time constant. The dimensions of a suspended Ge microbolometer's supporting legs were fine-tuned for a target response time of 5 ms, incorporating estimations for the size effects of the nanowire-like legs on thermal conductivity.

  3. Electroabsorption modulators based on bulk GaN films and GaN/AlGaN multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Kao, Chen-Kai; Bhattacharyya, Anirban; Thomidis, Christos; Paiella, Roberto; Moustakas, Theodore D.

    2011-04-01

    Ultraviolet electroabsorption modulators based on bulk GaN films and on GaN/AlGaN multiple quantum wells were developed and characterized. In both types of devices, the absorption edge at room temperature is dominated by excitonic effects and can be strongly modified through the application of an external electric field. In the bulk devices, the applied voltage causes a broadening and quenching of the excitonic absorption, leading to enhanced transmission. In the quantum-well devices, the external field partially cancels the built-in polarization-induced electric fields in the well layers, thereby increasing the absorption. Unlike optical modulators based on smaller-bandgap zinc blende semiconductors, the bulk devices here are shown to provide similar performance levels as the quantum well devices, which is mainly a consequence of the uniquely large exciton binding energies of nitride semiconductors.

  4. VIS-UV ZnCdO/ZnO multiple quantum well nanowires and the quantification of Cd diffusion.

    PubMed

    Lopez-Ponce, M; Nakamura, A; Suzuki, M; Temmyo, J; Agouram, S; Martínez-Tomás, M C; Muñoz-Sanjosé, V; Lefebvre, P; Ulloa, J M; Muñoz, E; Hierro, A

    2014-06-27

    We report on the growth and microstructure analysis of high Cd content ZnCdO/ZnO multiple quantum wells (MQW) within a nanowire. Heterostructures consisting of ten wells with widths from 0.7 to 10 nm are demonstrated, and show photoluminescence emissions ranging from 3.03 to 1.97 eV. The wells with thicknesses ≦̸2 nm have high radiative efficiencies compared to the thickest ones, consistent with the presence of quantum confinement. However, a nanometric analysis of the Cd profile along the heterostructures shows the presence of Cd diffusion from the ZnCdO well to the ZnO barrier. This phenomenon modifies the band structure and the optical properties of the heterostructure, and is considered in order to correctly identify quantum effects in the ZnCdO/ZnO MQWs.

  5. Design and Synthesis of Antiblinking and Antibleaching Quantum Dots in Multiple Colors via Wave Function Confinement.

    PubMed

    Cao, Hujia; Ma, Junliang; Huang, Lin; Qin, Haiyan; Meng, Renyang; Li, Yang; Peng, Xiaogang

    2016-12-07

    Single-molecular spectroscopy reveals that photoluminescence (PL) of a single quantum dot blinks, randomly switching between bright and dim/dark states under constant photoexcitation, and quantum dots photobleach readily. These facts cast great doubts on potential applications of these promising emitters. After ∼20 years of efforts, synthesis of nonblinking quantum dots is still challenging, with nonblinking quantum dots only available in red-emitting window. Here we report synthesis of nonblinking quantum dots covering most part of the visible window using a new synthetic strategy, i.e., confining the excited-state wave functions of the core/shell quantum dots within the core quantum dot and its inner shells (≤ ∼5 monolayers). For the red-emitting ones, the new synthetic strategy yields nonblinking quantum dots with small sizes (∼8 nm in diameter) and improved nonblinking properties. These new nonblinking quantum dots are found to be antibleaching. Results further imply that the PL blinking and photobleaching of quantum dots are likely related to each other.

  6. Wavefunction Engineering of Spintronic devices in ZnO/MgO and GaN/AlN Quantum Structures Doped with Transition Metal Ions

    DTIC Science & Technology

    2006-08-01

    modeling terahertz lasers in the wurtzite materials such as ZnO/MgZnO (or even in GaN /AlGaN quantum well structures) when we ’L. R. Ram-Mohan, "Finite...06 4. TITLE AND SUBTITLE 5a. CONTRACT NUMBER Wavefunction Engineering of Spintronic Devices in ZnO/MgO & GaN /AIN Quantum Structures Doped with...wurtzite heterostructures of ZnO/MgZnO and GaN /AlGaN systems grown on R-plane sapphire. The FEM approach gives wavefunctions and allows device modeling

  7. Photoinduced Single- and Multiple- Electron Dynamics Processes Enhanced by Quantum Confinement in Lead Halide Perovskite Quantum Dots.

    PubMed

    Vogel, Dayton Jon; Kryjevski, Andrei; Inerbaev, Talgat M; Kilin, Dmitri S

    2017-03-21

    Methyl-ammonium lead iodide perovskite (MAPbI3) is a promising material for photovoltaic devices. A modification of the MAPbI3 into confined nanostructures is expected to further increase efficiency of solar energy conversion. Photo-excited dynamic processes in a MAPbI3 quantum dot (QD) have been modeled by many-body perturbation theory and nonadiabatic dynamics. A photoexcitation is followed by either exciton cooling (EC), its radiative (RR) or non-radiative recombination (NRR), or multi-exciton generation (MEG) processes. Computed times of these processes fall in the order of MEG < EC < RR < NRR, where MEG is in the order of a few femtoseconds, EC at the picosecond range while RR and NRR are in the order of nanoseconds. Computed timescales indicate which electronic transition pathways can contribute to increase in charge collection efficiency. Simulated mechanism relaxation rates show that quantum confinement promotes MEG in MAPbI3 QDs.

  8. Photoinduced Single- and Multiple-Electron Dynamics Processes Enhanced by Quantum Confinement in Lead Halide Perovskite Quantum Dots

    DOE PAGES

    Vogel, Dayton J.; Kryjevski, Andrei; Inerbaev, Talgat; ...

    2017-03-21

    Methylammonium lead iodide perovskite (MAPbI3) is a promising material for photovoltaic devices. A modification of MAPbI3 into confined nanostructures is expected to further increase efficiency of solar energy conversion. Photoexcited dynamic processes in a MAPbI3 quantum dot (QD) have been modeled by many-body perturbation theory and nonadiabatic dynamics. A photoexcitation is followed by either exciton cooling (EC), its radiative (RR) or nonradiative recombination (NRR), or multiexciton generation (MEG) processes. Computed times of these processes fall in the order of MEG < EC < RR < NRR, where MEG is on the order of a few femtoseconds, EC is in themore » picosecond range, while RR and NRR are on the order of nanoseconds. Computed time scales indicate which electronic transition pathways can contribute to increase in charge collection efficiency. Simulated mechanisms of relaxation and their rates show that quantum confinement promotes MEG in MAPbI3 QDs.« less

  9. Properties of multiple quantum wells and their use in high-speed detectors and modulators

    NASA Technical Reports Server (NTRS)

    Bhattacharya, Pallab

    1988-01-01

    Quantum well systems lattice matched to GaAs and InP have emerged as important materials for use in long wavelength optoelectronic devices. Intrinsic problems associated with the growth of these quantum wells by molecular beam epitaxy are discussed and the luminescence properties of state-of-art quantum wells, using novel growth techniques are described. Finally, the properties of detectors, modulators and integrated devices made with these heterojunction materials are described and discussed.

  10. Quantum dynamics of hydrogen interacting with single-walled carbon nanotubes: multiple H-atom adsorbates.

    PubMed

    McAfee, Jason L; Poirier, Bill

    2011-02-21

    In a previous paper [J. L. McAfee and B. Poirier, J. Chem. Phys. 130, 064701 (2009)], using spin-polarized density functional theory (DFT), the authors reported a binding energy of 0.755 eV, for a single hydrogen atom adsorbed on a pristine (unrelaxed) (5,5) single-walled carbon nanotube (SWNT) substrate. A full three-dimensional (3D) potential energy surface (PES) for the SWNT-H system was also developed, and used in a quantum dynamics calculation to compute all rovibrational bound states, and associated equatorial and longitudinal adsorbate migration rates. A highly pronounced preference for the latter migration pathway at ambient temperatures was observed. In this work, we extend the aforementioned study to include multiple H-atom adsorbates. Extensive DFT calculations are performed, in order to ascertain the most relevant dynamical pathways. For two adsorbates, the SWNT-H-H system is found to exhibit highly site-specific binding, as well as long-range correlation and pronounced binding energy enhancement. The latter effect is even more pronounced in the full-hydrogenation limit, increasing the per-adsorbate binding energy to 2.6 eV. To study migration dynamics, a single-hole model is developed, for which the binding energy drops to 2.11 eV. A global 3D PES is developed for the hole migration model, using 40 radial × 18 cylindrical ab initio geometries, fit to a Fourier basis with radially dependent expansion coefficients (rms error 4.9 meV). As compared with the single-adsorbate case, the hole migration PES does not exhibit separate chemisorption and physisorption wells. The barrier to longitudinal migration is also found to be much lower. Quantum dynamics calculations for all rovibrational states are then performed (using a mixed spectral basis/phase-space optimized discrete variable representation), and used to compute longitudinal migration rates. Ramifications for the use of SWNTs as potential hydrogen storage materials are discussed.

  11. Flowing versus Static Conditions for Measuring Multiple Exciton Generation in PbSe Quantum Dots

    SciTech Connect

    Midgett, Aaron G.; Hillhouse, Hugh W.; Hughes, Barbara K.; Nozik, Arthur J.; Beard, Matthew C.

    2010-09-22

    Recent reports question the validity of pulsed fs-laser experiments for measuring the photon-to-exciton quantum yields (QYs) that result from multiple exciton generation (MEG). The repetitive nature of these experiments opens up an alternative relaxation pathway that may produce artificially high results. We present transient-absorption (TA) data for 4.6 and 6.6 nm diameter PbSe quantum dots (QDs) at a variety of pump photon energies. The data are collected under laminar flow conditions with volumetric flow rates ranging from 0 to 150 mL/min (resulting in Reynolds numbers up to 460). The results are modeled with a spatially resolved population balance of generation, recombination, convective replacement, and accumulation of long-lived excited QDs. By comparing the simulations and experiments, the steady-state population of the long-lived QD-excited states and their kinetics are determined for different experimental conditions. We also improve upon reported photon-to-exciton QYs for PbSe QDs. We find differences in the observed TA dynamics between flowing and static conditions that depend upon photon fluence, pump photon energy, and quality of the QD surfaces. For excitation energies below 2 Eg, independent of QD size or photon fluence, we observe no flow rate dependence in the TA dynamics. At excitation energies of hν > 3 Eg, we observe differences between static and flowing conditions that are most pronounced for high photon fluences. At 3.7 Eg and for 4.6 nm PbSe QDs we find a QY of 1.2 ± 0.1 and at 4.5 Eg the QY is 1.55 ± 0.05. With 6.6 nm QDs excited at 4.7 Eg we observe no difference between static and flowing conditions and find a QY of 1.61 ± 0.05. We also find that by treating the surface of QDs, we can decrease the charging probability (Pg ≈ 5 × 10-5) by a factor of 3-4. The observed variations suggest that different QD samples vary regarding their susceptibility to the

  12. Microsensors based on a whispering gallery mode in AlGaN microdisks undercut by hydrogen-environment thermal etching.

    PubMed

    Kouno, Tetsuya; Sakai, Masaru; Takeshima, Hoshi; Suzuki, Sho; Kikuchi, Akihiko; Kishino, Katsumi; Hara, Kazuhiko

    2017-04-20

    AlGaN microdisks were fabricated via a top-down process using electron-beam lithography, inductively coupled plasma reactive-ion etching, and hydrogen-environment thermal etching from commercial epitaxial wafers with a 100-300 nm thick AlGaN layer grown on a c-plane GaN layer by metal-organic chemical vapor deposition. The hydrogen-environment thermal etching performed well in undercutting the AlGaN microdisks owing to the selective etching for the GaN layer. The AlGaN microdisks acted as the whispering gallery mode (WGM) optical microresonators, exhibiting sharp resonant peaks in room temperature photoluminescence spectra. The evanescent component of the whispering gallery mode (WGM) is influenced by the ambient condition of the microdisk, resulting in the shift of the resonant peaks. The phenomenon is considered to be used for microsensors. Using the WGM in the AlGaN microdisks, we demonstrated microsensors and a microsensor system, which can potentially be used to evaluate biological and chemical actions in a microscale area in real time.

  13. Ultrafast carrier capture and Auger recombination in single GaN/InGaN multiple quantum well nanowires

    DOE PAGES

    Boubanga-Tombet, Stephane; Wright, Jeremy B.; Lu, Ping; ...

    2016-11-04

    Ultrafast optical microscopy is an important tool for examining fundamental phenomena in semiconductor nanowires with high temporal and spatial resolution. In this paper, we used this technique to study carrier dynamics in single GaN/InGaN core–shell nonpolar multiple quantum well nanowires. We find that intraband carrier–carrier scattering is the main channel governing carrier capture, while subsequent carrier relaxation is dominated by three-carrier Auger recombination at higher densities and bimolecular recombination at lower densities. Finally, the Auger constants in these nanowires are approximately 2 orders of magnitude lower than in planar InGaN multiple quantum wells, highlighting their potential for future light-emitting devices.

  14. Ultrafast carrier capture and Auger recombination in single GaN/InGaN multiple quantum well nanowires

    SciTech Connect

    Boubanga-Tombet, Stephane; Wright, Jeremy B.; Lu, Ping; Williams, Michael R. C.; Li, Changyi; Wang, George T.; Prasankumar, Rohit P.

    2016-11-04

    Ultrafast optical microscopy is an important tool for examining fundamental phenomena in semiconductor nanowires with high temporal and spatial resolution. In this paper, we used this technique to study carrier dynamics in single GaN/InGaN core–shell nonpolar multiple quantum well nanowires. We find that intraband carrier–carrier scattering is the main channel governing carrier capture, while subsequent carrier relaxation is dominated by three-carrier Auger recombination at higher densities and bimolecular recombination at lower densities. Finally, the Auger constants in these nanowires are approximately 2 orders of magnitude lower than in planar InGaN multiple quantum wells, highlighting their potential for future light-emitting devices.

  15. Monolithic strained-InGaAsP multiple-quantum-well lasers with integrated electroabsorption modulators for active mode locking

    NASA Astrophysics Data System (ADS)

    Sato, Kenji; Wakita, Koichi; Kotaka, Isamu; Kondo, Yasuhiro; Yamamoto, Mitsuo; Takada, Atsushi

    1994-07-01

    Active mode locking by monolithic lasers with integrated electroabsorption modulators using strained-InGaAsP multiple quantum wells is described. The electroabsorption modulator acts as a short optical gate when a sinusoidal voltage is driven at a deep bias point. Pulse widths as short as 2 ps have been obtained at a repetition rate of 16.3 GHz for a 2.5-mm-long monolithic laser.

  16. Plasma Heating in Highly Excited GaN/AlGaN Multiple Quantum Wells

    SciTech Connect

    Botchkarev, A; Chow, W W; Jiang, H X; Lin, J Y; Mair, R; Morkoc, H; Zeng, K C

    1998-10-09

    Plasma Heating in Highly Excited GaN/AIGaN Multiple Quantum @@lvEu Wells w f + 1998 %p, K. C. Zeng, R. Mair, J. Y. Liz and H. X. Jiang a) ` fabrication and understanding of MQW lasers [2-5]. For the design of these lasers, one on RT optical studies. Our results revealed that in the GaN/AIGaN MQWS, plasma heating strongly effects the carrier distribution between the confined and unconfined band-to-band and fke excitonic transitions [7]. In the MQW sample under low the unconfined states as determined from the band structure. sample under high Lxc, we varied the excitation intensity by one order of magnitude from 0.110 to IO. The carrier density is estimated to be about N=1012/cm2 (at UC= 0.1 Io) to 1013/cm2 (at 1=== l.). We plotted the PL spectra for four representative excitation fimction of injected carrier density N (open squares). The ratio starts at a value of about 18% for N=1012/cm2 (& = O. lb), and reaches a value over 64 `XO for N=1013/cm2 (& = regions is a loss to optical gain. The carrier density is ve~ high in our experiment and an electron-hole plasma (EHP) state is expected. Because the carrier transfer process plasma temperature. The laser pump energy is about 4.3 eV, which is far above the energy band gap of the sample studied here. This may result in a hot carrier population carrier densities and plasma temperatures. Using a phenomenological expression based The calculated ratio of carriers in the unconfked to the confined states (Ima~ kf) as a finction of carrier density at different temperatures are plotted in Fig. 3 (solid lines). The figure shows that the experiment results can only be explained by plasma heating of the injected carriers at high & ( TP > TJ. The transparency carrier densities for GaN/AIXGal.XN MQW structures with well thickness from 2 to 4 nm were calculated to be around 1x 1012/cm2 [10]. It is thus obvious from Fig. 3 that under high carrier injection density above the transparency density, the plasma temperature, TP, is no

  17. The role of phases and their interplay in molecular vibrational quantum computing with multiple qubits

    NASA Astrophysics Data System (ADS)

    Troppmann, Ulrike; Gollub, Caroline; de Vivie-Riedle, Regina

    2006-06-01

    Within the scope of molecular quantum computing with vibrational qubits, we analyse the impact of phases that are present during the quantum computation processes. While the phase relation in superposition states and its temporal evolution are crucial to any implementation of quantum computing, we elucidate the special challenge that emerges for phase control of qubits encoded in molecular vibrational eigenstates. Phase correctly prepared superposition states in general exist only for a finite time and with the inherent entanglement in molecular vibrational qubit systems their development displays a complex pattern. We show that the free relative phase evolution in such qubit systems can be utilized for the implementation of quantum phase gates. Moreover, a practical experimental realization of phase correct quantum gates acting on molecular vibrational qubits could be accomplished by a decomposition into laser-induced population transfer and free evolution phase gates. This concept adds to the flexibility in the implementation of quantum gate sequences and algorithms. A modification, where only a reduced number of selected relative phases needs to be adjusted, will make this scheme more robust and versatile. Finally, we also disclose and discuss another key feature for the implementation of phase correct quantum gates, i.e. the dependence of the quantum gate fidelity on the absolute or carrier-envelope phase of the driving femtosecond laserfield.

  18. Performance analysis of quantum access network using code division multiple access model

    NASA Astrophysics Data System (ADS)

    Hu, Linxi; Yang, Can; He, Guangqiang

    2017-06-01

    Not Available Project supported by the National Natural Science Foundation of China (Grant Nos. 61475099 and 61102053), the Program of State Key Laboratory of Quantum Optics and Quantum Optics Devices (Grant No. KF201405), the Open Fund of IPOC (BUPT) (Grant No. IPOC2015B004), and the Program of State Key Laboratory of Information Security (Grant No. 2016-MS-05).

  19. Time domain terahertz spectroscopy of semiconductor bulk and multiple quantum wells structures

    NASA Astrophysics Data System (ADS)

    Chen, Yue

    A time-domain terahertz spectroscopic system with high source power (average power > 10 nW) and high signal-to- noise ratio (>104) was developed and used to study ultrafast electronic processes in semiconductor structures. The physics of the spectroscopy, the theoretical basis of the interferometry, the model of the electron-electromagnetic field interaction, and the principle of experimental data processing are presented. The first direct measurement of the intervalley scattering time in In 0.53Ga0.47As was performed. The intervalley scattering time constants obtained were τLΓ = 35 fs and τLΓ = 450 fs. The spectroscopic data showed that at low carrier density the carrier- carrier scattering is unimportant. The intervalley deformation potential was obtained from the measured intervalley scattering time constant τ LΓ. The transient conductivity was obtained using time-domain terahertz spectroscopy. The frequency dependent terahertz spectroscopy enabled us to uniquely determine the transient mobility and density. The transient electron mobility is ~5200 cm2/Vs, which is less than the Hall mobility. For large photocarrier densities, this discrepancy is attributed to the additional momentum relaxation associated with electron-hole scattering. Using pump pulses with wavelength of 810 run, the electron trapping time in low-temperature-grown GaAs was accurately determined. The measured trapping time is slightly larger than that observed from a band-edge pump- probe measurements. We argue that the terahertz technique provides the most reliable measure of carrier lifetime due to the unique interaction. The carrier dynamics of low-temperature-grown InGaAs bulk and InGaAs/InAlAs multiple quantum wells were investigated. We were able to differentiate the two dominant mechanisms in the electron decay process, trapping and recombination. A trapping time as fast as 1.3-2.6 ps was observed for photo-excited electrons. The effects of Be-doping and growth temperature on the

  20. Multiple-path Quantum Interference Effects in a Double-Aharonov-Bohm Interferometer.

    PubMed

    Yang, Xf; Liu, Ys

    2010-05-22

    We investigate quantum interference effects in a double-Aharonov-Bohm (AB) interferometer consisting of five quantum dots sandwiched between two metallic electrodes in the case of symmetric dot-electrode couplings by the use of the Green's function equation of motion method. The analytical expression for the linear conductance at zero temperature is derived to interpret numerical results. A three-peak structure in the linear conductance spectrum may evolve into a double-peak structure, and two Fano dips (zero conductance points) may appear in the quantum system when the energy levels of quantum dots in arms are not aligned with one another. The AB oscillation for the magnetic flux threading the double-AB interferometer is also investigated in this paper. Our results show the period of AB oscillation can be converted from 2π to π by controlling the difference of the magnetic fluxes threading the two quantum rings.

  1. Optical Control of Intersubband Absorption in a Multiple Quantum Well-Embedded Semiconductor Microcravity

    NASA Technical Reports Server (NTRS)

    Liu, Ansheng; Ning, Cun-Zheng

    2000-01-01

    Optical intersubband response of a multiple quantum well (MQW)-embedded microcavity driven by a coherent pump field is studied theoretically. The n-type doped MQW structure with three subbands in the conduction band is sandwiched between a semi-infinite medium and a distributed Bragg reflector (DBR). A strong pump field couples the two upper subbands and a weak field probes the two lower subbands. To describe the optical response of the MQW-embedded microcavity, we adopt a semi-classical nonlocal response theory. Taking into account the pump-probe interaction, we derive the probe-induced current density associated with intersubband transitions from the single-particle density-matrix formalism. By incorporating the current density into the Maxwell equation, we solve the probe local field exactly by means of Green's function technique and the transfer-matrix method. We obtain an exact expression for the probe absorption coefficient of the microcavity. For a GaAs/Al(sub x)Ga(sub 1-x)As MQW structure sandwiched between a GaAs/AlAs DBR and vacuum, we performed numerical calculations of the probe absorption spectra for different parameters such as pump intensity, pump detuning, and cavity length. We find that the probe spectrum is strongly dependent on these parameters. In particular, we find that the combination of the cavity effect and the Autler-Townes effect results in a triplet in the optical spectrum of the MQW system. The optical absorption peak value and its location can be feasibly controlled by varying the pump intensity and detuning.

  2. Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates

    DOE PAGES

    Crawford, Mary H.; Allerman, Andrew A.; Armstrong, Andrew M.; ...

    2015-10-30

    We fabricated optically pumped and electrically injected ultraviolet (UV) lasers on reduced-threading-dislocation-density (reduced-TDD) AlGaN templates. The overgrowth of sub-micron-wide mesas in the Al0.32Ga0.68N templates enabled a tenfold reduction in TDD, to (2–3) × 108 cm–2. Optical pumping of AlGaN hetero-structures grown on the reduced-TDD templates yielded a low lasing threshold of 34 kW/cm2 at 346 nm. Room-temperature pulsed operation of laser diodes at 353 nm was demonstrated, with a threshold of 22.5 kA/cm2. Furthermore, reduced-TDD templates have been developed across the entire range of AlGaN compositions, presenting a promising approach for extending laser diodes into the deep UV.

  3. Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates

    SciTech Connect

    Crawford, Mary H.; Allerman, Andrew A.; Armstrong, Andrew M.; Smith, Michael L.; Cross, Karen C.

    2015-10-30

    We fabricated optically pumped and electrically injected ultraviolet (UV) lasers on reduced-threading-dislocation-density (reduced-TDD) AlGaN templates. The overgrowth of sub-micron-wide mesas in the Al0.32Ga0.68N templates enabled a tenfold reduction in TDD, to (2–3) × 108 cm–2. Optical pumping of AlGaN hetero-structures grown on the reduced-TDD templates yielded a low lasing threshold of 34 kW/cm2 at 346 nm. Room-temperature pulsed operation of laser diodes at 353 nm was demonstrated, with a threshold of 22.5 kA/cm2. Furthermore, reduced-TDD templates have been developed across the entire range of AlGaN compositions, presenting a promising approach for extending laser diodes into the deep UV.

  4. Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system

    PubMed Central

    He, Chenguang; Qin, Zhixin; Xu, Fujun; Zhang, Lisheng; Wang, Jiaming; Hou, Mengjun; Zhang, Shan; Wang, Xinqiang; Ge, Weikun; Shen, Bo

    2016-01-01

    Two AlGaN samples with different strain were designed to investigate mechanism of stress-driven composition evolution. It is discovered that AlGaN grown on AlN or (AlN/GaN superlattices (SLs))/GaN both consist of two distinct regions with different compositions: transition region and uniform region, which is attributed to the compositional pulling effect. The formation of the transition region is due to the partial stress release caused by the generation of misfit dislocations near the hetero-interface. And the Al composition in the uniform region depends on the magnitude of residual strain. The difference in relaxation degree is 80.5% for the AlGaN epilayers grown on different underlayers, leading to a large Al composition difference of 22%. The evolutionary process of Al composition along [0001] direction was investigated in detail. PMID:27112969

  5. Multiple quantum filtered 23Na NMR in the Langendorff perfused mouse heart: Ratio of triple/double quantum filtered signals correlates with [Na]i

    PubMed Central

    Eykyn, Thomas R.; Aksentijević, Dunja; Aughton, Karen L.; Southworth, Richard; Fuller, William; Shattock, Michael J.

    2015-01-01

    We investigate the potential of multiple quantum filtered (MQF) 23Na NMR to probe intracellular [Na]i in the Langendorff perfused mouse heart. In the presence of Tm(DOTP) shift reagent the triple quantum filtered (TQF) signal originated largely from the intracellular sodium pool with a 32 ± 6% contribution of the total TQF signal arising from extracellular sodium, whilst the rank 2 double-quantum filtered signal (DQF), acquired with a 54.7° flip-angle pulse, originated exclusively from the extracellular sodium pool. Given the different cellular origins of the 23Na MQF signals we propose that the TQF/DQF ratio can be used as a semi-quantitative measure of [Na]i in the mouse heart. We demonstrate a good correlation of this ratio with [Na]i measured with shift reagent at baseline and under conditions of elevated [Na]i. We compare the measurements of [Na]i using both shift reagent and TQF/DQF ratio in a cohort of wild type mouse hearts and in a transgenic PLM3SA mouse expressing a non-phosphorylatable form of phospholemman, showing a modest but measurable elevation of baseline [Na]i. MQF filtered 23Na NMR is a potentially useful tool for studying normal and pathophysiological changes in [Na]i, particularly in transgenic mouse models with altered Na regulation. PMID:26196304

  6. Multiple quantum filtered (23)Na NMR in the Langendorff perfused mouse heart: Ratio of triple/double quantum filtered signals correlates with [Na]i.

    PubMed

    Eykyn, Thomas R; Aksentijević, Dunja; Aughton, Karen L; Southworth, Richard; Fuller, William; Shattock, Michael J

    2015-09-01

    We investigate the potential of multiple quantum filtered (MQF) (23)Na NMR to probe intracellular [Na]i in the Langendorff perfused mouse heart. In the presence of Tm(DOTP) shift reagent the triple quantum filtered (TQF) signal originated largely from the intracellular sodium pool with a 32±6% contribution of the total TQF signal arising from extracellular sodium, whilst the rank 2 double-quantum filtered signal (DQF), acquired with a 54.7° flip-angle pulse, originated exclusively from the extracellular sodium pool. Given the different cellular origins of the (23)Na MQF signals we propose that the TQF/DQF ratio can be used as a semi-quantitative measure of [Na]i in the mouse heart. We demonstrate a good correlation of this ratio with [Na]i measured with shift reagent at baseline and under conditions of elevated [Na]i. We compare the measurements of [Na]i using both shift reagent and TQF/DQF ratio in a cohort of wild type mouse hearts and in a transgenic PLM(3SA) mouse expressing a non-phosphorylatable form of phospholemman, showing a modest but measurable elevation of baseline [Na]i. MQF filtered (23)Na NMR is a potentially useful tool for studying normal and pathophysiological changes in [Na]i, particularly in transgenic mouse models with altered Na regulation.

  7. Correlation between the structural and cathodoluminescence properties in InGaN/GaN multiple quantum wells with large number of quantum wells

    SciTech Connect

    Yang, Jing; Zhao, Degang Jiang, Desheng; Chen, Ping; Zhu, Jianjun; Liu, Zongshun; Le, Lingcong; He, Xiaoguang; Li, Xiaojing; Wang, Hui; Yang, Hui; Jahn, Uwe

    2014-09-01

    Cathodoluminescence (CL) characteristics on 30-period InGaN/GaN multiple quantum well (MQW) solar cell structures are investigated, revealing the relationship between optical and structural properties of the MQW structures with a large number of quantum wells. In the bottom MQW layers, a blueshift of CL peak along the growth direction is found and attributed to the decrease of indium content due to the compositional pulling effect. An obvious split of emission peak and a redshift of the main emission energy are found in the top MQW layers when the MQW grows above the critical layer thickness. They are attributed to the segregation of In-rich InGaN clusters rather than the increase of indium content in quantum well layer. The MQW structure is identified to consist of two regions: a strained one in the bottom, where the indium content is gradually decreased, and a partly relaxed one in the top with segregated In-rich InGaN clusters.

  8. Continuous-variable quantum teleportation with non-Gaussian entangled states generated via multiple-photon subtraction and addition

    NASA Astrophysics Data System (ADS)

    Wang, Shuai; Hou, Li-Li; Chen, Xian-Feng; Xu, Xue-Fen

    2015-06-01

    We theoretically analyze the Einstein-Podolsky-Rosen (EPR) correlation, the quadrature squeezing, and the continuous-variable quantum teleportation when considering non-Gaussian entangled states generated by applying multiple-photon subtraction and multiple-photon addition to a two-mode squeezed vacuum state (TMSVs). Our results indicate that in the case of the multiple-photon-subtracted TMSVs with symmetric operations, the corresponding EPR correlation, the two-mode squeezing degree, the sum squeezing, and the fidelity of teleporting a coherent state or a squeezed vacuum state can be enhanced for any squeezing parameter r and these enhancements increase with the number of subtracted photons in the low-squeezing regime, while asymmetric multiple-photon subtractions will generally reduce these quantities. For the multiple-photon-added TMSVs, although it holds stronger entanglement, its EPR correlation, two-mode squeezing, sum squeezing, and the fidelity of a coherent state are always smaller than that of the TMSVs. Only when considering the case of teleporting a squeezed vacuum state does the symmetric photon addition make somewhat of an improvement in the fidelity for large-squeezing parameters. In addition, we analytically prove that a one-mode multiple-photon-subtracted TMSVs is equivalent to that of the one-mode multiple-photon-added one. And one-mode multiple-photon operations will diminish the above four quantities for any squeezing parameter r .

  9. In-plane commensurate GaN/AlN junctions: Single-layer composite structures, single and multiple quantum wells and quantum dots

    NASA Astrophysics Data System (ADS)

    Onen, A.; Kecik, D.; Durgun, E.; Ciraci, S.

    2017-04-01

    In-plane composite structures constructed of the stripes or core/shells of single-layer GaN and AlN, which are joined commensurately, display a diversity of electronic properties that can be tuned by the size of their constituents. In heterostructures, the dimensionality of the electrons changes from two dimensional (2D) to one dimensional (1D) upon their confinements in wide constituent stripes, leading to the type-I band alignment and hence multiple quantum well structure in the direct space. The δ doping of one wide stripe by another narrow stripe results in local narrowing or widening of the band gap. A single quantum well structure is acquired from the finite-size AlN-GaN-AlN junctions. In a patterned array of GaN/AlN core/shells, the dimensionality of the electronic states is reduced from two dimensional to zero dimensional, forming multiple quantum dots in large GaN cores, while 2D electrons propagate in multiply connected AlN shell as if they are in a supercrystal. A consistent and detailed discussion of the effects of confinement in momentum and direct spaces is provided. As a result of confinement, the variation of the band gap in the direct space is found to be rather different from the edges of the conduction and valence bands inferred from the band edges of constituent 2D single-layer GaN and AlN. Even if all the results in this study pertain to the free-standing single-layer composite structures, the effects of the different substrates over which these composites can grow are examined in detail. This study unveils the potential of composite structures in designing novel nanomaterials. These predictions are obtained from first-principles calculations based on density functional theory on 2D GaN and AlN compound semiconductors which were synthesized recently.

  10. 19F single-quantum and 19F-33S heteronuclear multiple-quantum coherence NMR of SF6 in thermotropic nematogens and in the gas phase.

    PubMed

    Tervonen, Henri; Saunavaara, Jani; Ingman, L Petri; Jokisaari, Jukka

    2006-08-24

    (19)F single-quantum (SQC) and (19)F-(33)S heteronuclear multiple-quantum coherence (HMQC) NMR spectroscopy of sulfur hexafluoride (SF(6)) dissolved in thermotropic liquid crystals (TLCs) were used to investigate the properties of TLCs. On one hand, environmental effects on the NMR parameters of SF(6), (19)F nuclear shielding, (19)F-(33)S spin-spin coupling, secondary isotope effects of sulfur on (19)F shielding, and the self-diffusion coefficient in the direction of the external magnetic field were studied as well. The temperature dependence of the (19)F shielding of SF(6) in TLCs was modeled with a function that takes into account the properties of both TLC and SF(6). It appears that the TLC environment deforms the electronic system of SF(6) so that the (19)F shielding tensor becomes slightly anisotropic, with the anisotropy being from -0.5 to -1.4 ppm, depending upon the TLC solvent. On the contrary, no sign of residual dipolar coupling between (19)F and (33)S was found, meaning that the so-called deformational effects, which arise from the interaction between vibrational and reorientational motions of the molecule, on the geometry of the molecule are insignificant. Diffusion activation energies, E(a), were determined from the temperature dependence of the self-diffusion coefficients. In each TLC, E(a) increases when moving from an isotropic phase to a nematic phase. The spin-spin coupling constant, J((19)F,(33)S), increases by ca. 10 Hz when moving from the gas phase to TLC solutions. The secondary isotope shifts of (19)F shielding are practically independent of TLC solvent and temperature. For the first time, (19)F-(33)S heteronuclear multiple-quantum NMR spectra were recorded for SF(6) in the gas phase and in a liquid-crystalline solution.

  11. High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells

    SciTech Connect

    Chang, Chiao-Yun; Li, Hen; Lu, Tien-Chang

    2014-03-03

    In this study, we demonstrated high efficiency InGaN/GaN light emitting diodes (LEDs) with asymmetric triangular multiple quantum wells (MQWs). Asymmetric triangular MQWs not only contribute to uniform carrier distribution in InGaN/GaN MQWs but also yield a low Auger recombination rate. In addition, asymmetric triangular MQWs with gallium face-oriented inclination band profiles can be immune from the polarization charge originating from typical c-plane InGaN/GaN quantum well structures. In the experiment, LEDs incorporated with asymmetric triangular MQWs with gallium face-oriented inclination band profiles exhibited a 60.0% external quantum efficiency at 20 mA and a 27.0% efficiency droop at 100 mA (corresponding to a current density of 69 A/cm{sup 2}), which accounted for an 11.7% efficiency improvement and a 31.1% droop reduction compared with symmetric square quantum well structure LEDs.

  12. Electronic surface and dielectric interface states on GaN and AlGaN

    NASA Astrophysics Data System (ADS)

    Eller, Brianna S.; Yang, Jialing; Nemanich, Robert J.

    2013-09-01

    GaN and AlGaN have shown great potential in next-generation high-power electronic devices; however, they are plagued by a high density of interface states that affect device reliability and performance, resulting in large leakage current and current collapse. In this review, the authors summarize the current understanding of the gate leakage current and current collapse mechanisms, where awareness of the surface defects is the key to controlling and improving device performance. With this in mind, they present the current research on surface states on GaN and AlGaN and interface states on GaN and AlGaN-based heterostructures. Since GaN and AlGaN are polar materials, both are characterized by a large bound polarization charge on the order of 10(13) charges/cm(2) that requires compensation. The key is therefore to control the compensation charge such that the electronic states do not serve as electron traps or affect device performance and reliability. Band alignment modeling and measurement can help to determine the electronic state configuration. In particular, band bending can determine how the polarization bound charge is compensated; however, the band bending is extremely sensitive to the specific processing steps such as cleaning, dielectric or metal deposition, postdeposition or postmetallization treatments, which affect oxygen coverage, carbon contamination, structural defects, bonding configurations, defect states, absorbates, and Fermi pinning states. In many cases, the specific effects of these treatments on the surface and interface states are not entirely clear as the nature of the electronic states has been obscured in complexity and subtlety. Consequently, a more systematic and methodical approach may be required.

  13. Multiple Metamagnetic Quantum Criticality in Sr_{3}Ru_{2}O_{7}.

    PubMed

    Tokiwa, Y; Mchalwat, M; Perry, R S; Gegenwart, P

    2016-06-03

    Bilayer strontium ruthenate Sr_{3}Ru_{2}O_{7} displays pronounced non-Fermi liquid behavior at magnetic fields around 8 T, applied perpendicular to the ruthenate planes, which previously has been associated with an itinerant metamagnetic quantum critical end point (QCEP). We focus on the magnetic Grüneisen parameter Γ_{H}, which is the most direct probe to characterize field-induced quantum criticality. We confirm quantum critical scaling due to a putative two-dimensional QCEP near 7.845(5) T, which is masked by two ordered phases A and B, identified previously by neutron scattering. In addition, we find evidence for a QCEP at 7.53(2) T and determine the quantum critical regimes of both instabilities and the effect of their superposition.

  14. Multiple Metamagnetic Quantum Criticality in Sr3 Ru2 O7

    NASA Astrophysics Data System (ADS)

    Tokiwa, Y.; Mchalwat, M.; Perry, R. S.; Gegenwart, P.

    2016-06-01

    Bilayer strontium ruthenate Sr3 Ru2 O7 displays pronounced non-Fermi liquid behavior at magnetic fields around 8 T, applied perpendicular to the ruthenate planes, which previously has been associated with an itinerant metamagnetic quantum critical end point (QCEP). We focus on the magnetic Grüneisen parameter ΓH, which is the most direct probe to characterize field-induced quantum criticality. We confirm quantum critical scaling due to a putative two-dimensional QCEP near 7.845(5) T, which is masked by two ordered phases A and B , identified previously by neutron scattering. In addition, we find evidence for a QCEP at 7.53(2) T and determine the quantum critical regimes of both instabilities and the effect of their superposition.

  15. Simultaneous SU(2) rotations on multiple quantum dot exciton qubits using a single shaped pulse

    NASA Astrophysics Data System (ADS)

    Mathew, Reuble; Yang, Hong Yi Shi; Hall, Kimberley C.

    2015-10-01

    Recent experimental demonstration of a parallel (π ,2 π ) single qubit rotation on excitons in two distant quantum dots [Nano Lett. 13, 4666 (2013), 10.1021/nl4018176] is extended in numerical simulations to the design of pulses for more general quantum state control, demonstrating the feasibility of full SU(2) rotations of each exciton qubit. Our results show that simultaneous high-fidelity quantum control is achievable within the experimentally accessible parameter space for commercial Fourier-domain pulse shaping systems. The identification of a threshold of distinguishability for the two quantum dots (QDs) for achieving high-fidelity parallel rotations, corresponding to a difference in transition energies of ˜0.25 meV , points to the possibility of controlling more than 10 QDs with a single shaped optical pulse.

  16. Optimizing the multiple quantum well thickness of an InGaN blue light emitting diode

    NASA Astrophysics Data System (ADS)

    Xu, Bing; Zhao, Jun Liang; Wang, Shu Guo; Dai, Hai Tao; Yu, Sheng-Fu; Lin, Ray-Ming; Chu, Fu-Chuan; Huang, Chou-Hsiung; Sun, Xiao Wei

    2013-03-01

    InGaN/GaN blue light emitting diodes with varied quantum well thickness from 2.4 nm to 3.6 nm are fabricated and characterized by atmosphere pressure metalorganic chemical vapor deposition (AP-MOCVD). Experimental results show that the exciton localization effect is enhanced from 21.76 to 23.48 by increasing the quantum well thickness from 2.4 nm to 2.7 nm. However, with the further increase of quantum well thickness, the exciton localization effect becomes weaker. Meanwhile, the peak wavelength of electroluminescence redshift with the increase of well thickness due to the larger quantum confined Stark effect (QCSE). In addition, the efficiency droop can be improved by increasing the well thickness.

  17. Photogalvanic effects for interband absorption in AlGaN /GaN superlattices

    NASA Astrophysics Data System (ADS)

    Cho, K. S.; Chen, Y. F.; Tang, Y. Q.; Shen, B.

    2007-01-01

    The linear and circular photogalvanic effects (CPGEs), induced by ultraviolet (325nm) radiation, have been observed in the (0001)-oriented Al0.15Ga0.85N/GaN superlattices. The CPGE current changes sign upon reversing the radiation helicity, and it is up to two orders of magnitude larger than that obtained by far-infrared radiation. This result suggests the existence of a sizeable Rashba spin splitting in AlGaN /GaN superlattices. It also provides a possibility for the generation of spin orientation-induced current at room temperature.

  18. Quantum Darwinism

    SciTech Connect

    Zurek, Wojciech H

    2008-01-01

    Quantum Darwinism - proliferation, in the environment, of multiple records of selected states of the system (its information-theoretic progeny) - explains how quantum fragility of individual state can lead to classical robustness of their multitude.

  19. Optically controlled reflection modulator using GaAs-AlGaAs n-i-p-i/multiple-quantum-well structures

    NASA Technical Reports Server (NTRS)

    Law, K.-K.; Simes, R. J.; Coldren, L. A.; Gossard, A. C.; Maserjian, J.

    1989-01-01

    An optically controlled reflection modulator has been demonstrated that consists of a combination of a GaAs-AlGaAs n-i-p-i doping structure with a multiple-quantum-well structures on top of a distributed Bragg reflector, all grown by MBE. A modulation of approximately 60 percent is obtained on the test structure, corresponding to a differential change of absorption coefficient in the quantum wells of approximately 7500/cm. Changes in reflectance can be observed with a control beam power as low as 1.5 microW. This device structure has the potential of being developed as an optically addressed spatial light modulator for optical information processing.

  20. Storage and retrieval of vector beams of light in a multiple-degree-of-freedom quantum memory.

    PubMed

    Parigi, Valentina; D'Ambrosio, Vincenzo; Arnold, Christophe; Marrucci, Lorenzo; Sciarrino, Fabio; Laurat, Julien

    2015-07-13

    The full structuration of light in the transverse plane, including intensity, phase and polarization, holds the promise of unprecedented capabilities for applications in classical optics as well as in quantum optics and information sciences. Harnessing special topologies can lead to enhanced focusing, data multiplexing or advanced sensing and metrology. Here we experimentally demonstrate the storage of such spatio-polarization-patterned beams into an optical memory. A set of vectorial vortex modes is generated via liquid crystal cell with topological charge in the optic axis distribution, and preservation of the phase and polarization singularities is demonstrated after retrieval, at the single-photon level. The realized multiple-degree-of-freedom memory can find applications in classical data processing but also in quantum network scenarios where structured states have been shown to provide promising attributes, such as rotational invariance.

  1. Picosecond excitonic absorption recovery of 100 nm GaAs/AlGaAs narrow multiple quantum-well wires

    NASA Astrophysics Data System (ADS)

    Tackeuchi, Atsushi; Kitada, Hideki; Arimoto, Hiroshi; Sugiyama, Yoshihiro; Endoh, Akira; Nakata, Yoshiaki; Inata, Tsuguo; Muto, Shunichi

    1991-08-01

    We report the time-resolved absorption measurement of narrow multiple quantum-well (MQW) wires to investigate their fast recoveries from excitonic absorption bleaching. Wires down to 130 nm were fabricated from MQWs using focused ion beam lithography and electron cyclotron-resonance chlorine-plasma etching. In this structure, the photoexcited carriers diffuse toward the sidewalls and recombine on the surface of the sidewalls. We show that the strong optical nonlinearity of excitons is preserved, even in wires of 130 nm width, and having a fast recovery time in the picosecond region. We also briefly discuss the possibility of making quantum wires which have a faster recovery time and larger optical nonlinearity.

  2. Multiple Exciton Generation Solar Cells Using CdSe Quantum Dots

    NASA Astrophysics Data System (ADS)

    Gebreselassie, Haftom Mesfin; Sharma, R. B.; Chander, Nikhil

    2011-10-01

    Experimental and Simulation works of Nanostructured Solar Cells Using CdSe Quantum Dots have been analyzed and investigated. CdSe quantum dots have been synthesized from non coordinating and high boiling solvent Octadecene and a series of increasing CdSe particle sizes are produced. The synthesized CdSe quantum dots are highly examined under a Transmission Electron Microscope and four images of different sizes of CdSe quantum dots (5.8 nm, 6.4 nm, 7.0 nm and 7.7 nm) have been obtained. A 1.1×1.1 cm2 TiO2 electrode is prepared using indium tin oxide conducting glass and TiO2 nanoparticles. The Oleic acid terminated CdSe quantum dots are separated from the octadecene by using 100% ethanol and centrifuge machine of spin about 4000 rpm until the shaking gave no longer suspension. The CdSe quantum dot (5.8 nm) was adsorbed on TiO2 photoelectrode and used as sensitizer. The relationship of Bandgap energy, Emission wavelength with respect to quantum dot size have been simulated and investigated. In this paper work, a sandwich type cell configuration which is made up of TiO2 photoelectrode, graphite coated counter electrode, an electrolyte of iodine and potassium iodide have been used. This sandwich type cell has been exposed to sun light and we have achieved 0.32 V and 0.2 mA cm-2 of potential difference and current respectively.

  3. Photon bunching reveals single-electron cathodoluminescence excitation efficiency in InGaN quantum wells

    NASA Astrophysics Data System (ADS)

    Meuret, Sophie; Coenen, Toon; Zeijlemaker, Hans; Latzel, Michael; Christiansen, Silke; Conesa-Boj, Sonia; Polman, Albert

    2017-07-01

    Cathodoluminescence spectroscopy is a key analysis technique in nanophotonics research and technology, yet many aspects of its fundamental excitation mechanisms are not well understood on the single-electron and single-photon level. Here, we determine the cathodoluminescence emission statistics of InGaN quantum wells embedded in GaN under 6-30-keV electron excitation and find that the light emission rate varies strongly from electron to electron. Strong photon bunching is observed for the InGaN quantum well emission at 2.77 eV due to the generation of multiple quantum well excitations by a single primary electron. The bunching effect, measured by the g(2 )(t ) autocorrelation function, decreases with increasing beam current in the range 3-350 pA. Under pulsed excitation (p =2 -100 ns ; 0.13-6 electrons per pulse), the bunching effect strongly increases. A model based on Monte Carlo simulations is developed that assumes a fraction γ of the primary electrons generates electron-hole pairs that create multiple photons in the quantum wells. At a fixed primary electron energy (10 keV) the model explains all g(2 ) measurements for different beam currents and pulse durations using a single value for γ =0.5 . At lower energies, when electrons cause mostly near-surface excitations, γ is reduced (γ =0.01 at 6 keV), which is explained by the presence of a AlGaN barrier layer that inhibits carrier diffusion to the buried quantum wells. The combination of g(2 ) measurements in pulsed and continuous mode with spectral analysis provides a powerful tool to study optoelectronic properties and may find application in many other optically active systems and devices.

  4. Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions

    SciTech Connect

    Hammersley, S.; Dawson, P.; Kappers, M. J.; Massabuau, F. C.-P.; Sahonta, S.-L.; Oliver, R. A.; Humphreys, C. J.

    2015-09-28

    InGaN-based light emitting diodes and multiple quantum wells designed to emit in the green spectral region exhibit, in general, lower internal quantum efficiencies than their blue-emitting counter parts, a phenomenon referred to as the “green gap.” One of the main differences between green-emitting and blue-emitting samples is that the quantum well growth temperature is lower for structures designed to emit at longer wavelengths, in order to reduce the effects of In desorption. In this paper, we report on the impact of the quantum well growth temperature on the optical properties of InGaN/GaN multiple quantum wells designed to emit at 460 nm and 530 nm. It was found that for both sets of samples increasing the temperature at which the InGaN quantum well was grown, while maintaining the same indium composition, led to an increase in the internal quantum efficiency measured at 300 K. These increases in internal quantum efficiency are shown to be due reductions in the non-radiative recombination rate which we attribute to reductions in point defect incorporation.

  5. Strong electronic interaction and multiple quantum Hall ferromagnetic phases in trilayer graphene

    NASA Astrophysics Data System (ADS)

    Datta, Biswajit; Dey, Santanu; Samanta, Abhisek; Agarwal, Hitesh; Borah, Abhinandan; Watanabe, Kenji; Taniguchi, Takashi; Sensarma, Rajdeep; Deshmukh, Mandar M.

    2017-02-01

    Quantum Hall effect provides a simple way to study the competition between single particle physics and electronic interaction. However, electronic interaction becomes important only in very clean graphene samples and so far the trilayer graphene experiments are understood within non-interacting electron picture. Here, we report evidence of strong electronic interactions and quantum Hall ferromagnetism seen in Bernal-stacked trilayer graphene. Due to high mobility ~500,000 cm2 V-1 s-1 in our device compared to previous studies, we find all symmetry broken states and that Landau-level gaps are enhanced by interactions; an aspect explained by our self-consistent Hartree-Fock calculations. Moreover, we observe hysteresis as a function of filling factor and spikes in the longitudinal resistance which, together, signal the formation of quantum Hall ferromagnetic states at low magnetic field.

  6. Strong electronic interaction and multiple quantum Hall ferromagnetic phases in trilayer graphene.

    PubMed

    Datta, Biswajit; Dey, Santanu; Samanta, Abhisek; Agarwal, Hitesh; Borah, Abhinandan; Watanabe, Kenji; Taniguchi, Takashi; Sensarma, Rajdeep; Deshmukh, Mandar M

    2017-02-20

    Quantum Hall effect provides a simple way to study the competition between single particle physics and electronic interaction. However, electronic interaction becomes important only in very clean graphene samples and so far the trilayer graphene experiments are understood within non-interacting electron picture. Here, we report evidence of strong electronic interactions and quantum Hall ferromagnetism seen in Bernal-stacked trilayer graphene. Due to high mobility ∼500,000 cm(2 )V(-1 )s(-1) in our device compared to previous studies, we find all symmetry broken states and that Landau-level gaps are enhanced by interactions; an aspect explained by our self-consistent Hartree-Fock calculations. Moreover, we observe hysteresis as a function of filling factor and spikes in the longitudinal resistance which, together, signal the formation of quantum Hall ferromagnetic states at low magnetic field.

  7. Strong electronic interaction and multiple quantum Hall ferromagnetic phases in trilayer graphene

    PubMed Central

    Datta, Biswajit; Dey, Santanu; Samanta, Abhisek; Agarwal, Hitesh; Borah, Abhinandan; Watanabe, Kenji; Taniguchi, Takashi; Sensarma, Rajdeep; Deshmukh, Mandar M.

    2017-01-01

    Quantum Hall effect provides a simple way to study the competition between single particle physics and electronic interaction. However, electronic interaction becomes important only in very clean graphene samples and so far the trilayer graphene experiments are understood within non-interacting electron picture. Here, we report evidence of strong electronic interactions and quantum Hall ferromagnetism seen in Bernal-stacked trilayer graphene. Due to high mobility ∼500,000 cm2 V−1 s−1 in our device compared to previous studies, we find all symmetry broken states and that Landau-level gaps are enhanced by interactions; an aspect explained by our self-consistent Hartree–Fock calculations. Moreover, we observe hysteresis as a function of filling factor and spikes in the longitudinal resistance which, together, signal the formation of quantum Hall ferromagnetic states at low magnetic field. PMID:28216666

  8. Ohmic contacts to Al-rich AlGaN heterostructures

    DOE PAGES

    Douglas, E. A.; Reza, S.; Sanchez, C.; ...

    2017-06-06

    Due to the ultra-wide bandgap of Al-rich AlGaN, up to 5.8 eV for the structures in this study, obtaining low resistance ohmic contacts is inherently difficult to achieve. A comparative study of three different fabrication schemes is presented for obtaining ohmic contacts to an Al-rich AlGaN channel. Schottky-like behavior was observed for several different planar metallization stacks (and anneal temperatures), in addition to a dry-etch recess metallization contact scheme on Al0.85Ga0.15N/Al0.66Ga0.34N. However, a dry etch recess followed by n+-GaN regrowth fabrication process is reported as a means to obtain lower contact resistivity ohmic contacts on a Al0.85Ga0.15N/Al0.66Ga0.34N heterostructure. In conclusion,more » specific contact resistivity of 5×10-3 Ω cm2 was achieved after annealing Ti/Al/Ni/Au metallization.« less

  9. Efficiency enhancement of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors

    NASA Astrophysics Data System (ADS)

    Tsai, Yu-Lin; Lin, Chien-Chung; Han, Hau-Vei; Chen, Hsin-Chu; Chen, Kuo-Ju; Lai, Wei-Chi; Sheu, Jin-Kong; Lai, Fang-I.; Yu, Peichen; Kuo, Hao-Chung

    2013-03-01

    In recent year, InGaN-based alloy was also considered for photovoltaic devices owing to the distinctive material properties which are benefit photovoltaic performance. However, the Indium tin oxide (ITO) layer on top, which plays a role of transparent conductive oxide (TCO), can absorb UV photons without generating photocurrent. Also, the thin absorber layer in the device, which is consequent result after compromising with limited crystal quality, has caused insufficient light absorption. In this report, we propose an approach for solving these problems. A hybrid design of InGaN/GaN multiple quantum wells (MQWs) solar cells combined with colloidal CdS quantum dots (QDs) and back side distributed Bragg reflectors (DBRs) has been demonstrated. CdS QDs provide down-conversion effect at UV regime to avoid absorption of ITO. Moreover, CdS QDs also exhibit anti-reflective feature. DBRs at the back side have effectively reflected the light back into the absorber layer. CdS QDs enhance the external quantum efficiency (EQE) for light with wavelength shorter than 400 nm, while DBRs provide a broad band enhancement in EQE, especially within the region of 400 nm ~ 430 nm in wavelength. CdS QDs effectively achieved a power conversion efficiency enhancement as high as 7.2% compared to the device without assistance of CdS QDs. With the participation of DBRs, the power conversion efficiency enhancement has been further boosted to 14%. We believe that the hybrid design of InGaN/GaN MQWs solar cells with QDs and DBRs can be a method for high efficiency InGaN/GaN MQWs solar cells.

  10. A core-multiple shell nanostructure enabling concurrent upconversion and quantum cutting for photon management.

    PubMed

    Shao, Wei; Chen, Guanying; Ohulchanskyy, Tymish Y; Yang, Chunhui; Ågren, Hans; Prasad, Paras N

    2017-02-02

    Photon management enables the manipulation of the number of input photons by conversion of two or more light quanta into one (upconversion) or vice versa (quantum cutting). Simultaneous realization of both these processes in a single unit provides unique opportunities of efficient utilization of photons throughout a broad spectral range. Yet, concurrent realization of these two parallel optical processes in one single unit remains elusive, limiting its impact on many existing or possible future applications such as for panchromatic photovoltaics. Here, we describe an epitaxial active core/inert shell/active shell/inert shell fluoride nanostructure to implement upconversion and quantum cutting within spatially confined and isolated rare-earth-doped active domains. The core area transforms infrared photons through trivalent erbium (Er(3+)) ions into three- and two-photon upconverted visible and near infrared luminescence, while the second shell domain splits an excitation photon into two near infrared photons through cooperative quantum cutting from one trivalent terbium ion (Tb(3+)) to two trivalent ytterbium ions (Yb(3+)). The inert layer in between the active domains is able to effectively suppress the destructive interference between upconversion and quantum cutting, while the outermost inert shell is able to eliminate surface-related quenching. This design enables the colloidal core/multishell nanoparticles to have an upconversion quantum yield of ∼1.6%, and to have a luminescence yield of the quantum cutting process as high as ∼130%. This work constitutes a solid step for flexible photon management in a single nanostructure, and has an implication for photonic applications beyond photovoltaics.

  11. Photogalvanic effects for interband transition in p-Si0.5Ge0.5/Si multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Wei, C. M.; Cho, K. S.; Chen, Y. F.; Peng, Y. H.; Chiu, C. W.; Kuan, C. H.

    2007-12-01

    Circular photogalvanic effect (CPGE) and linear photogalvanic effect for interband transition have been observed simultaneously in Si0.5Ge0.5/Si multiple quantum wells. The signature of the CPGE is evidenced by the change of its sign upon reversing the radiation helicity. It is found that the observed CPGE photocurrent is an order of magnitude greater than that obtained for intersubband transition. The dependences of the CPGE on the angle of incidence and the excitation intensities can be well interpreted based on its characteristics. The large signal of spin generation observed here at room temperature should be very useful for the realization of practical application of spintronics.

  12. An optically detectable CO2 sensor utilizing polyethylenimine and starch functionalized InGaN/GaN multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Chen, Y. C.; Shih, H. Y.; Chen, J. Y.; Tan, W. J.; Chen, Y. F.

    2013-07-01

    An optically detectable gas sensor based on the high surface sensitivity of functionalized polyethylenimine/starch In0.15Ga0.85N/GaN strained semiconductor multiple quantum wells (MQWs) has been developed. Due to the excellent piezoelectricity of the MQWs, the change of surface charges caused by chemical interaction can introduce a strain and induce an internal field. In turn, it tilts the energy levels of the MQWs and modifies the optical properties. Through the measurement of the changes in photoluminescence as well as Raman scattering spectra under different concentrations of carbon dioxide gas, we demonstrate the feasibility and high sensitivity of the sensors derived from our methodology.

  13. Quantum-noise quenching in the correlated spontaneous-emission laser as a multiplicative noise process. I. A geometrical argument

    SciTech Connect

    Schleich, W.; Scully, M.O.

    1988-02-15

    We show, via simple geometrical arguments, the quantum-noise quenching in a correlated (spontaneous) emission laser (CEL). This noise quenching is a consequence of the correlation between noise sources which results in a multiplicative noise process. The steady-state distribution for the phase difference between the two electric fields in a CEL is compared and contrasted to that of a standard phase-locked laser. Noise quenching is shown to occur in the case of the CEL via an explicit solution of the Fokker-Planck equation.

  14. Multiple-wavelength operation of electroabsorption intensity modulator array fabricated using the one-step quantum well intermixing process

    NASA Astrophysics Data System (ADS)

    Ng, S. L.; Lim, H. S.; Lam, Y. L.; Chan, Y. C.; Ooi, B. S.; Aimez, V.; Beauvais, J.; Beerens, J.

    2002-09-01

    Multiple-wavelength selective channel electroabsorption intensity modulators have been fabricated on a single InGaAs/InGaAsP chip using a one-step quantum well intermixing process. This technique was demonstrated for tailoring the intensity modulator operating wavelength by incorporating low-energy (360 keV) phosphorus ions implantation induced disordering process with gray-mask lithography technology. A modulation depth of -15 dB has been measured from these devices with a voltage swing of -4.5 V.

  15. Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells

    SciTech Connect

    Li, Zhi; Kang, Junjie; Li, Hongjian; Liu, Zhiqiang Yi, Xiaoyan Wang, Guohong; Wei Wang, Bo; Chuan Feng, Zhe; Hsiang Weng, Yu; Lee, Yueh-Chien

    2014-02-28

    The effect of carrier localization in InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes is investigated by photoluminescence (PL) and time-resolved PL (TRPL) measurements. PL results show that two peaks obtained by Gaussian fitting both relate to the emission from localized states. By fitting the TRPL lifetimes at various emission energies, two localization depths corresponding to the In-rich regions and quasi-MQWs regions are obtained. Using a model we proposed, we suggest that compositional fluctuations of In content and variation of well width are responsible for carrier localization in In-rich regions and quasi-MQWs regions, respectively.

  16. Time-dependent multiple scattering approach for a single finger-gate in a Rashba-type quantum channel .

    NASA Astrophysics Data System (ADS)

    Wang, Lu-Yao

    2006-03-01

    We consider a Rashba-type quantum channel (RQC) consisting of one AC-biased finger-gates (FG) that orient perpendicularly and located above the RQC. Such an AC-biased FG gives rise to a local time-modulation in the Rashba coupling parameter, and generates a dc spin current (SC). A static potential is located inside or outside the FG in the RQC and the backscattering effect is studied. We use analytical time-dependent multiple scattering approach to treat the effect of the SC suppression due to a static potential in the RQC.

  17. Hydrogen cluster/network in tobermorite as studied by multiple-quantum spin counting {sup 1}H NMR

    SciTech Connect

    Mogami, Yuuki; Yamazaki, Satoru; Matsuno, Shinya; Matsui, Kunio; Noda, Yasuto; Takegoshi, K.

    2014-12-15

    Proton multiple-quantum (MQ) spin-counting experiment has been employed to study arrangement of hydrogen atoms in 9 Å/11 Å natural/synthetic tobermorites. Even though all tobermorite samples give similar characterless, broad static-powder {sup 1}H NMR spectra, their MQ spin-counting spectra are markedly different; higher quanta in 11 Å tobermorite do not grow with the MQ excitation time, while those in 9 Å one do. A statistical analysis of the MQ results recently proposed [26] is applied to show that hydrogens align in 9 Å tobermorite one dimensionally, while in 11 Å tobermorite they exist as a cluster of 5–8 hydrogen atoms.

  18. From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: Role of the AlGaN layer microstructure

    SciTech Connect

    Fisichella, G.; Greco, G.; Roccaforte, F.; Giannazzo, F.

    2014-08-11

    The electrical behaviour of graphene (Gr) contacts to Al{sub x}Ga{sub 1−x}N/GaN heterostructures has been investigated, focusing, in particular, on the impact of the AlGaN microstructure on the current transport at Gr/AlGaN interface. Two Al{sub 0.25}Ga{sub 0.75}N/GaN heterostructures with very different quality in terms of surface roughness and defectivity, as evaluated by atomic force microscopy (AFM) and transmission electron microscopy, were compared in this study, i.e., a uniform and defect-free sample and a sample with a high density of typical V-defects, which locally cause a reduction of the AlGaN thickness. Nanoscale resolution current voltage (I-V) measurements by an Au coated conductive AFM tip were carried out at several positions both on the bare and Gr-coated AlGaN surfaces. Rectifying contacts were found onto both bare AlGaN surfaces, but with a more inhomogeneous and lower Schottky barrier height (Φ{sub B} ≈ 0.6 eV) for AlGaN with V-defects, with respect to the case of the uniform AlGaN (Φ{sub B} ≈ 0.9 eV). Instead, very different electrical behaviours were observed in the presence of the Gr interlayer between the Au tip and AlGaN, i.e., a Schottky contact with reduced barrier height (Φ{sub B} ≈ 0.4 eV) for the uniform AlGaN and an Ohmic contact for the AlGaN with V-defects. Interestingly, excellent lateral uniformity of the local I-V characteristics was found in both cases and can be ascribed to an averaging effect of the Gr electrode over the AlGaN interfacial inhomogeneities. Due to the locally reduced AlGaN layer thickness, V defect act as preferential current paths from Gr to the 2DEG and can account for the peculiar Ohmic behaviour of Gr contacts on defective AlGaN.

  19. Long Wavelength Multiple Quantum Well Lasers for High-Speed Modulation Applications

    DTIC Science & Technology

    1992-02-01

    Laboratory Air Force Systems Command Griffiss Air Force Base , NY 13441-5700 This report has been reviewed by the Rome Laboratory Public Affairs Office (PA...this document. 3 2. Technical Report 2.1 Introduction Early work on quantum well lasers for 1.3g.m operation was almost exclusively based upon LPE, and...InGaAlAs based (graded-index separate confinement heterostructure) GRIN-SCH quantum well laser at 1.3gm was among the first of a small number of papers

  20. Radiation damage resistance of AlGaN detectors for applications in the extreme-ultraviolet spectral range

    SciTech Connect

    Barkusky, Frank; Peth, Christian; Bayer, Armin; Mann, Klaus; John, Joachim; Malinowski, Pawel E.

    2009-09-15

    We report on the fabrication of aluminum gallium nitride (AlGaN) Schottky-photodiode-based detectors. AlGaN layers were grown using metal-organic chemical vapor deposition (MOCVD) on Si(111) wafers. The diodes were characterized at a wavelength of 13.5 nm using a table-top extreme-ultraviolet (EUV) radiation source, consisting of a laser-produced xenon plasma and a Schwarzschild objective. The responsivity of the diodes was tested between EUV energies ranging from 320 nJ down to several picojoules. For low fluences, a linear responsivity of 7.14 mAs/J could be determined. Saturation starts at approximately 1 nJ, merging into a linear response of 0.113 mAs/J, which could be attributed to the photoeffect on the Au electrodes on top of the diode. Furthermore, degradation tests were performed up to an absolute dose of 3.3x10{sup 19} photons/cm{sup 2}. AlGaN photodiodes were compared to commercially available silicon-based photodetectors. For AlGaN diodes, responsivity does not change even for the highest EUV dose, whereas the response of the Si diode decreases linearly to {approx}93% after 2x10{sup 19} photons/cm{sup 2}.

  1. Radiation damage resistance of AlGaN detectors for applications in the extreme-ultraviolet spectral range.

    PubMed

    Barkusky, Frank; Peth, Christian; Bayer, Armin; Mann, Klaus; John, Joachim; Malinowski, Pawel E

    2009-09-01

    We report on the fabrication of aluminum gallium nitride (AlGaN) Schottky-photodiode-based detectors. AlGaN layers were grown using metal-organic chemical vapor deposition (MOCVD) on Si(111) wafers. The diodes were characterized at a wavelength of 13.5 nm using a table-top extreme-ultraviolet (EUV) radiation source, consisting of a laser-produced xenon plasma and a Schwarzschild objective. The responsivity of the diodes was tested between EUV energies ranging from 320 nJ down to several picojoules. For low fluences, a linear responsivity of 7.14 mAs/J could be determined. Saturation starts at approximately 1 nJ, merging into a linear response of 0.113 mAs/J, which could be attributed to the photoeffect on the Au electrodes on top of the diode. Furthermore, degradation tests were performed up to an absolute dose of 3.3x10(19) photons/cm(2). AlGaN photodiodes were compared to commercially available silicon-based photodetectors. For AlGaN diodes, responsivity does not change even for the highest EUV dose, whereas the response of the Si diode decreases linearly to approximately 93% after 2x10(19) photons/cm(2).

  2. Simulation for spectral response of solar-blind AlGaN based p-i-n photodiodes

    NASA Astrophysics Data System (ADS)

    Xue, Shiwei; Xu, Jintong; Li, Xiangyang

    2015-04-01

    In this article, we introduced how to build a physical model of refer to the device structure and parameters. Simulations for solar-blind AlGaN based p-i-n photodiodes spectral characteristics were conducted in use of Silvaco TCAD, where device structure and parameters are comprehensively considered. In simulation, the effects of polarization, Urbach tail, mobility, saturated velocities and lifetime in AlGaN device was considered. Especially, we focused on how the concentration-dependent Shockley-Read-Hall (SRH) recombination model affects simulation results. By simulating, we analyzed the effects in spectral response caused by TAUN0 and TAUP0, and got the values of TAUN0 and TAUP0 which can bring a result coincides with test results. After that, we changed their values and made the simulation results especially the part under 255 nm performed better. In conclusion, the spectral response between 200 nm and 320 nm of solar-blind AlGaN based p-i-n photodiodes were simulated and compared with test results. We also found that TAUN0 and TAUP0 have a large impact on spectral response of AlGaN material.

  3. Effect of well layer thickness on quantum and energy conversion efficiencies for InGaN/GaN multiple quantum well solar cells

    NASA Astrophysics Data System (ADS)

    Miyoshi, Makoto; Tsutsumi, Tatsuya; Kabata, Tomoki; Mori, Takuma; Egawa, Takashi

    2017-03-01

    We investigated the effect of well layer thicknesses on the external quantum efficiency (EQE) and energy conversion efficiency (ECE) for InGaN/GaN multiple quantum well (MQW) solar cells grown on sapphire substrates by metalorganic chemical vapor deposition. The results indicated that EQE and ECE have maximum values at a specific well thickness. When the well thickness is sufficiently thin, EQE and ECE increase with an increase in the well thickness owing to an increase in light absorption. Then, once the well thickness surpasses a critical thickness, EQE and ECE begin to decrease owing to the influence of nonradiative recombination processes, which was indicated by the static and dynamic photoluminescence analyses. The critical well thickness probably depends not only on the MQW design but also on growth conditions. Further, we confirmed that the increased total thickness of the stacked well layers leads to increased light absorption and thereby contributes to the improvement of solar cell performance. A high short circuit current density of 1.34 mA/cm2 and a high ECE of 1.31% were achieved for a InGaN/GaN MQW solar cell with a 3.2-nm-thick InGaN well with total well thickness of 115 nm.

  4. Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and "Negative" Thermal Activation Energy.

    PubMed

    Bao, Wei; Su, Zhicheng; Zheng, Changcheng; Ning, Jiqiang; Xu, Shijie

    2016-09-30

    Two-dimensional InGaN/GaN multiple-quantum-wells (MQW) LED structure was nanotextured into quasi-one-dimensional nanowires (NWs) with different average diameters with a combination approach of Ni nanoislands as mask + dry etching. Such nanotexturing bring out several appealing effects including deeper localization of carriers and significant improvement in quantum efficiency (e.g., from 4.76% of the planar MQW structure to 12.5% of the 160 nm MQW NWs) of light emission in the whole interested temperature range from 4 K to 300 K. With the aid of localized-state ensemble (LSE) luminescence model, the photoluminescence spectra of the samples are quantitatively interpreted in the entire temperature range. In terms of distinctive temperature dependence of photoluminescence from these samples, a concept of "negative" thermal activation energy is tentatively proposed for the MQW NWs samples. These findings could lead to a deeper insight into the physical nature of localization and luminescence mechanism of excitons in InGaN/GaN nanowires.

  5. Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and “Negative” Thermal Activation Energy

    NASA Astrophysics Data System (ADS)

    Bao, Wei; Su, Zhicheng; Zheng, Changcheng; Ning, Jiqiang; Xu, Shijie

    2016-09-01

    Two-dimensional InGaN/GaN multiple-quantum-wells (MQW) LED structure was nanotextured into quasi-one-dimensional nanowires (NWs) with different average diameters with a combination approach of Ni nanoislands as mask + dry etching. Such nanotexturing bring out several appealing effects including deeper localization of carriers and significant improvement in quantum efficiency (e.g., from 4.76% of the planar MQW structure to 12.5% of the 160 nm MQW NWs) of light emission in the whole interested temperature range from 4 K to 300 K. With the aid of localized-state ensemble (LSE) luminescence model, the photoluminescence spectra of the samples are quantitatively interpreted in the entire temperature range. In terms of distinctive temperature dependence of photoluminescence from these samples, a concept of “negative” thermal activation energy is tentatively proposed for the MQW NWs samples. These findings could lead to a deeper insight into the physical nature of localization and luminescence mechanism of excitons in InGaN/GaN nanowires.

  6. Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and “Negative” Thermal Activation Energy

    PubMed Central

    Bao, Wei; Su, Zhicheng; Zheng, Changcheng; Ning, Jiqiang; Xu, Shijie

    2016-01-01

    Two-dimensional InGaN/GaN multiple-quantum-wells (MQW) LED structure was nanotextured into quasi-one-dimensional nanowires (NWs) with different average diameters with a combination approach of Ni nanoislands as mask + dry etching. Such nanotexturing bring out several appealing effects including deeper localization of carriers and significant improvement in quantum efficiency (e.g., from 4.76% of the planar MQW structure to 12.5% of the 160 nm MQW NWs) of light emission in the whole interested temperature range from 4 K to 300 K. With the aid of localized-state ensemble (LSE) luminescence model, the photoluminescence spectra of the samples are quantitatively interpreted in the entire temperature range. In terms of distinctive temperature dependence of photoluminescence from these samples, a concept of “negative” thermal activation energy is tentatively proposed for the MQW NWs samples. These findings could lead to a deeper insight into the physical nature of localization and luminescence mechanism of excitons in InGaN/GaN nanowires. PMID:27686154

  7. Molecularly Engineered Organic-Inorganic Hybrid Perovskite with Multiple Quantum Well Structure for Multicolored Light-Emitting Diodes

    PubMed Central

    Hu, Hongwei; Salim, Teddy; Chen, Bingbing; Lam, Yeng Ming

    2016-01-01

    Organic-inorganic hybrid perovskites have the potential to be used as a new class of emitters with tunable emission, high color purity and good ease of fabrication. Recent studies have so far been focused on three-dimensional (3D) perovskites, such as CH3NH3PbBr3 and CH3NH3PbI3 for green and infrared emission. Here, we explore a new series of hybrid perovskite emitters with a general formula of (C4H9NH3)2(CH3NH3)n−1PbnI3n+1 (where n = 1, 2, 3), which possesses a multiple quantum well structure. The quantum well thickness of these materials is adjustable through simple molecular engineering which results in a continuously tunable bandgap and emission spectra. Deep saturated red emission was obtained with a peak external quantum efficiency of 2.29% and a maximum luminance of 214 cd/m2. Green and blue LEDs were also demonstrated through halogen substitutions in these hybrid perovskites. We expect these results to open up the way towards high performance perovskite LEDs through molecular-structure engineering of these perovskite emitters. PMID:27633084

  8. Multiple Andreev reflections in s -wave superconductor-quantum dot-topological superconductor tunnel junctions and Majorana bound states

    NASA Astrophysics Data System (ADS)

    Golub, Anatoly

    2015-05-01

    We calculate the current as a function of applied voltage in a nontopological s -wave superconductor-quantum dot-topological superconductor (TS) tunnel junction. We consider the type of TS which hosts two Majorana bound states (MBSs) at the ends of a semiconductor quantum wire or of a chain of magnetic atoms in the proximity with an s -wave superconductor. We find that the I -V characteristic of such a system in the regime of big voltages has a typical two-dot shape and is ornamented by peaks of multiple Andreev reflections. We also consider the other options when the zero-energy states are created by disorder (hereby Shiba states) or by Andreev zero-energy bound states at the surface of a quantum dot and a superconductor. The later are obtained by tuning the magnetic field to a specific value. Unlike the last two cases the MBS I -V curves are robust to change the magnetic field. Therefore, the magnetic-field dependence of the tunneling current can serve as a unique signature for the presence of a MBS.

  9. Generating free charges by carrier multiplication in quantum dots for highly efficient photovoltaics.

    PubMed

    Ten Cate, Sybren; Sandeep, C S Suchand; Liu, Yao; Law, Matt; Kinge, Sachin; Houtepen, Arjan J; Schins, Juleon M; Siebbeles, Laurens D A

    2015-02-17

    CONSPECTUS: In a conventional photovoltaic device (solar cell or photodiode) photons are absorbed in a bulk semiconductor layer, leading to excitation of an electron from a valence band to a conduction band. Directly after photoexcitation, the hole in the valence band and the electron in the conduction band have excess energy given by the difference between the photon energy and the semiconductor band gap. In a bulk semiconductor, the initially hot charges rapidly lose their excess energy as heat. This heat loss is the main reason that the theoretical efficiency of a conventional solar cell is limited to the Shockley-Queisser limit of ∼33%. The efficiency of a photovoltaic device can be increased if the excess energy is utilized to excite additional electrons across the band gap. A sufficiently hot charge can produce an electron-hole pair by Coulomb scattering on a valence electron. This process of carrier multiplication (CM) leads to formation of two or more electron-hole pairs for the absorption of one photon. In bulk semiconductors such as silicon, the energetic threshold for CM is too high to be of practical use. However, CM in nanometer sized semiconductor quantum dots (QDs) offers prospects for exploitation in photovoltaics. CM leads to formation of two or more electron-hole pairs that are initially in close proximity. For photovoltaic applications, these charges must escape from recombination. This Account outlines our recent progress in the generation of free mobile charges that result from CM in QDs. Studies of charge carrier photogeneration and mobility were carried out using (ultrafast) time-resolved laser techniques with optical or ac conductivity detection. We found that charges can be extracted from photoexcited PbS QDs by bringing them into contact with organic electron and hole accepting materials. However, charge localization on the QD produces a strong Coulomb attraction to its counter charge in the organic material. This limits the production

  10. Use of external cavity quantum cascade laser compliance voltage in real-time trace gas sensing of multiple chemicals

    NASA Astrophysics Data System (ADS)

    Phillips, Mark C.; Taubman, Matthew S.; Kriesel, Jason

    2015-01-01

    We describe a prototype trace gas sensor designed for real-time detection of multiple chemicals. The sensor uses an external cavity quantum cascade laser (ECQCL) swept over its tuning range of 940-1075 cm-1 (9.30-10.7 μm) at a 10 Hz repetition rate. The sensor was designed for operation in multiple modes, including gas sensing within a multi-pass Heriott cell and intracavity absorption sensing using the ECQCL compliance voltage. In addition, the ECQCL compliance voltage was used to reduce effects of long-term drifts in the ECQCL output power. The sensor was characterized for noise, drift, and detection of chemicals including ammonia, methanol, ethanol, isopropanol, Freon- 134a, Freon-152a, and diisopropyl methylphosphonate (DIMP). We also present use of the sensor for mobile detection of ammonia downwind of cattle facilities, in which concentrations were recorded at 1-s intervals.

  11. Deep UV AlGaN light emitting diodes grown by gas source molecular beam epitaxy on sapphire and AlGaN/sapphire substrates

    NASA Astrophysics Data System (ADS)

    Nikishin, S.; Borisov, B.; Kuryatkov, V.; Usikov, A.; Dmitriev, V.; Holtz, M.

    2006-02-01

    We report the electrical and optical properties of deep ultraviolet light emitting diodes (LEDs) based on digital alloy structures (DAS) of AlN/Al 0.08Ga 0.92N grown by gas source molecular beam epitaxy with ammonia on sapphire substrates and AlGaN/sapphire templates. AlGaN/sapphire templates were grown by recently developed stress controlled hydride vapor phase epitaxy (HVPE). For DAS with effective bandgap of 5.1 eV we obtain room temperature electron concentrations up to 1x10 19 cm -3 and hole concentrations of 1x10 18 cm -3. Based on these results we prepared double heterostructure (DHS) LEDs operating in the range of 250 to 290 nm. The emission wavelengths were controlled through the effective bandgap of the active region. The possible ways for increase of LED's efficiency are discussed. We observed significant improvement in the room temperature luminescence efficiency (by factor of 100) of AlGaN quantum wells when a transition growth mode is induced by reduced flux of ammonia. We found that active layer grown on HVPE AlGaN/sapphire substrates have higher luminescence efficiency (by factor of 3) than DAS grown on sapphire.

  12. Impact of biexcitons on the relaxation mechanisms of polaritons in III-nitride based multiple quantum well microcavities

    NASA Astrophysics Data System (ADS)

    Corfdir, P.; Levrat, J.; Rossbach, G.; Butté, R.; Feltin, E.; Carlin, J.-F.; Christmann, G.; Lefebvre, P.; Ganière, J.-D.; Grandjean, N.; Deveaud-Plédran, B.

    2012-06-01

    We report on the direct observation of biexcitons in a III-nitride based multiple quantum well microcavity operating in the strong light-matter coupling regime by means of nonresonant continuous wave and time-resolved photoluminescence at low temperature. First, the biexciton dynamics is investigated for the bare active medium (multiple quantum wells alone) evidencing localization on potential fluctuations due to alloy disorder and thermalization between both localized and free excitonic and biexcitonic populations. Then, the role of biexcitons is considered for the full microcavity: in particular, we observe that for specific detunings the bottom of the lower polariton branch is directly fed by the radiative dissociation of either cavity biexcitons or excitons mediated by one LO-phonon. Accordingly, minimum polariton lasing thresholds are observed, when the bottom of the lower polariton branch corresponds in energy to the exciton or cavity biexciton first LO-phonon replica. This singular observation highlights the role of excitonic molecules in the polariton condensate formation process as being a more efficient relaxation channel when compared to the usually assumed acoustical phonon emission one.

  13. Bandgaps and band offsets in strain-compensated InGaAs/InGaAsP multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Ma, Chunsheng; Jin, Zhi; Tian, Fengshou; Yang, Ningguo; Yang, Shuren; Liu, Shiyong

    1998-08-01

    In terms of the parameter interpolation principle, calculations are performed for bandgaps and band offsets in strain-compensated InzGa1-zAs/InxGa1-xAsyP1-y multiple quantum well structures on InP. Relations between strains and material compositions in InzGa1-zAs wells and InxGa1-xAsyP1-y barriers are analyzed, and relative ranges of strains are evaluated. Bandgaps of InzGa1-zAs wells and InxGa1-xAsyP1-y barriers for heavy- and light-holes are studied, and relative ranges of bandgaps are estimated. Dependence of band offsets of conduction band and valence band for heavy- and light-holes on strain compensation between InzGa1-zAs wells and InxGa1-xAsyP1-y barriers is investigated, and variation of band offsets versus strain compensation is discussed. The computed results show that strains, bandgaps and band offsets are functions of material compositions, strain compensation changes the band offsets, and hence modifies the band structures and improves the features of strain- compensated multiple quantum well optoelectronic devices.

  14. Suppression of surface recombination in surface plasmon coupling with an InGaN/GaN multiple quantum well sample.

    PubMed

    Wang, Hsiang-Chen; Yu, Xuan-Yu; Chueh, Yu-Lun; Malinauskas, Tadas; Jarasiunas, Kestutis; Feng, Shih-Wei

    2011-09-26

    Temperature-dependent picosecond non-degenerate four-wave-mixing experiments were performed to explore the carrier dynamics in an InGaN/GaN multiple quantum well sample, in which light emission enhancement with surface plasmon (SP) coupling has been identified. In the time-resolved photoluminescence results, we can identify the faster carrier decay time of the sample with surface plasmon coupling. The faster decay time is due to this sample's ability to create additional channels for effective carrier recombination. In the four-wave-mixing results, a slower grating decay time of the sample with surface plasmon coupling was measured. The diffusion coefficients and surface recombination velocities of photo-created carriers were estimated by modeling the decay rate of transient grating signals. For the sample for which surface plasmon coupling exists, smaller diffusion coefficients and slower surface recombination velocities can be estimated when the temperatures are above 150 K. The carriers coupling with some SP modes is not the only mechanism contributing to emission enhancement. In the InGaN/GaN multiple quantum well sample, surface recombination suppressed by SP coupling is another factor for increased light emission efficiency. © 2011 Optical Society of America

  15. Split-Inteins for Simultaneous, site-specific conjugation of Quantum Dots to multiple protein targets In vivo

    PubMed Central

    2011-01-01

    Background Proteins labelled with Quantum Dots (QDs) can be imaged over long periods of time with ultrahigh spatial and temporal resolution, yielding important information on the spatiotemporal dynamics of proteins within live cells or in vivo. However one of the major problems regarding the use of QDs for biological imaging is the difficulty of targeting QDs onto proteins. We have recently developed a DnaE split intein-based method to conjugate Quantum Dots (QDs) to the C-terminus of target proteins in vivo. In this study, we expand this approach to achieve site-specific conjugation of QDs to two or more proteins simultaneously with spectrally distinguishable QDs for multiparameter imaging of cellular functions. Results Using the DnaE split intein we target QDs to the C-terminus of paxillin and show that paxillin-QD conjugates become localized at focal adhesions allowing imaging of the formation and dissolution of these complexes. We go on to utilize a different split intein, namely Ssp DnaB mini-intein, to demonstrate N-terminal protein tagging with QDs. Combination of these two intein systems allowed us to simultaneously target two distinct proteins with spectrally distinguishable QDs, in vivo, without any cross talk between the two intein systems. Conclusions Multiple target labeling is a unique feature of the intein based methodology which sets it apart from existing tagging methodologies in that, given the large number of characterized split inteins, the number of individual targets that can be simultaneously tagged is only limited by the number of QDs that can be spectrally distinguished within the cell. Therefore, the intein-mediated approach for simultaneous, in vivo, site-specific (N- and C-terminus) conjugation of Quantum Dots to multiple protein targets opens up new possibilities for bioimaging applications and offers an effective system to target QDs and other nanostructures to intracellular compartments as well as specific molecular complexes. PMID

  16. Influence of temperature on the mechanism of carrier injection in light-emitting diodes based on InGaN/GaN multiple quantum wells

    SciTech Connect

    Prudaev, I. A. Golygin, I. Yu.; Shirapov, S. B.; Romanov, I. S.; Khludkov, S. S.; Tolbanov, O. P.

    2013-10-15

    The experimental current-voltage characteristics and dependences of the external quantum yield on the current density of light-emitting diodes based on InGaN/GaN multiple quantum wells for the wide temperature range T = 10-400 K are presented. It is shown that, at low-temperatures T < 100 K, the injection of holes into the quantum wells occurs from localized acceptor states. The low-temperature injection of electrons into p-GaN occurs due to quasi-ballistic transport in the region of multiple quantum wells. An increase in temperature leads to an increase in the current which is governed by thermally activated hole and electron injection from the allowed bands of GaN.

  17. Ultrafast Supercontinuum Spectroscopy of Carrier Multiplication and Biexcitonic Effects in Excited States of PbS Quantum Dots

    SciTech Connect

    Sfeir M. Y.; Gesuele, F.; Koh, W.-K.; Murray, C.B.; Heinz, T.F.; Wong, C.W.

    2012-06-01

    We examine the population dynamics of multiple excitons in PbS quantum dots using spectrally resolved ultrafast supercontinuum transient absorption (SC-TA) measurements. We simultaneously probe the first three excitonic transitions. The transient spectra show the presence of bleaching of absorption for the 1S{sub h}-1S{sub e} transition, as well as transients associated with the 1P{sub h}-1P{sub e} transition. We examine signatures of carrier multiplication (multiple excitons arising from a single absorbed photon) from analysis of the bleaching features in the limit of low absorbed photon numbers (multiple-exciton generation is discussed both in terms of the ratio between early- to long-time transient absorption signals and of a broadband global fit to the data. Analysis of the population dynamics shows that bleaching associated with biexciton population is red shifted with respect to the single exciton feature, which is in accordance with a positive binding energy for the biexciton.

  18. Dynamic light-matter coupling across multiple spatial dimensions in a quantum dots-in-a-well heterostructure

    SciTech Connect

    Prasankumar, Rohit P; Taylor, Antoinette J

    2009-01-01

    Ultrafast density-dependent optical spectroscopic measurements on a quantum dots-in-a-well heterostructure reveal several distinctive phenomena, most notably a strong coupling between the quantum well population and light absorption at the quantum dot excited state.

  19. Performance enhancement of InGaN light-emitting diodes with a leakage electron recombination quantum well

    NASA Astrophysics Data System (ADS)

    Li, Fangzheng; Lin, Hong; Li, Jing; Xie, Nan; Guo, Zhiyou

    2014-12-01

    An InGaN light-emitting diodes with a leakage electron recombination (LER) quantum well have been proposed and investigated numerically by using the APSYS simulation software. The simulation results indicate that the AlGaN electron blocking layer inserted between the last two quantum wells changed the carrier concentrations distribution, and the leakage electrons can be further recombined with holes in the LER quantum well which can decrease the electrons that spill out from active region. As a result, the internal quantum efficiency and light output power are markedly improved attributed to LER quantum well.

  20. Picture this: The value of multiple visual representations for student learning of quantum concepts in general chemistry

    NASA Astrophysics Data System (ADS)

    Allen, Emily Christine

    Mental models for scientific learning are often defined as, "cognitive tools situated between experiments and theories" (Duschl & Grandy, 2012). In learning, these cognitive tools are used to not only take in new information, but to help problem solve in new contexts. Nancy Nersessian (2008) describes a mental model as being "[loosely] characterized as a representation of a system with interactive parts with representations of those interactions. Models can be qualitative, quantitative, and/or simulative (mental, physical, computational)" (p. 63). If conceptual parts used by the students in science education are inaccurate, then the resulting model will not be useful. Students in college general chemistry courses are presented with multiple abstract topics and often struggle to fit these parts into complete models. This is especially true for topics that are founded on quantum concepts, such as atomic structure and molecular bonding taught in college general chemistry. The objectives of this study were focused on how students use visual tools introduced during instruction to reason with atomic and molecular structure, what misconceptions may be associated with these visual tools, and how visual modeling skills may be taught to support students' use of visual tools for reasoning. The research questions for this study follow from Gilbert's (2008) theory that experts use multiple representations when reasoning and modeling a system, and Kozma and Russell's (2005) theory of representational competence levels. This study finds that as students developed greater command of their understanding of abstract quantum concepts, they spontaneously provided additional representations to describe their more sophisticated models of atomic and molecular structure during interviews. This suggests that when visual modeling with multiple representations is taught, along with the limitations of the representations, it can assist students in the development of models for reasoning about

  1. On-chip photonic system using suspended p-n junction InGaN/GaN multiple quantum wells device and multiple waveguides

    SciTech Connect

    Wang, Yongjin Zhu, Guixia; Gao, Xumin; Yang, Yongchao; Yuan, Jialei; Shi, Zheng; Zhu, Hongbo; Cai, Wei

    2016-04-18

    We propose, fabricate, and characterize the on-chip integration of suspended p-n junction InGaN/GaN multiple quantum wells (MQWs) device and multiple waveguides on the same GaN-on-silicon platform. The integrated devices are fabricated via a wafer-level process and exhibit selectable functionalities for diverse applications. As the suspended p-n junction InGaN/GaN MQWs device operates under a light emitting diode (LED) mode, part of the light emission is confined and guided by the suspended waveguides. The in-plane propagation along the suspended waveguides is measured by a micro-transmittance setup. The on-chip data transmission is demonstrated for the proof-of-concept photonic integration. As the suspended p-n junction InGaN/GaN MQWs device operates under photodiode mode, the light is illuminated on the suspended waveguides with the aid of the micro-transmittance setup and, thus, coupled into the suspended waveguides. The guided light is finally sensed by the photodiode, and the induced photocurrent trace shows a distinct on/off switching performance. These experimental results indicate that the on-chip photonic integration is promising for the development of sophisticated integrated photonic circuits in the visible wavelength region.

  2. On-chip photonic system using suspended p-n junction InGaN/GaN multiple quantum wells device and multiple waveguides

    NASA Astrophysics Data System (ADS)

    Wang, Yongjin; Zhu, Guixia; Cai, Wei; Gao, Xumin; Yang, Yongchao; Yuan, Jialei; Shi, Zheng; Zhu, Hongbo

    2016-04-01

    We propose, fabricate, and characterize the on-chip integration of suspended p-n junction InGaN/GaN multiple quantum wells (MQWs) device and multiple waveguides on the same GaN-on-silicon platform. The integrated devices are fabricated via a wafer-level process and exhibit selectable functionalities for diverse applications. As the suspended p-n junction InGaN/GaN MQWs device operates under a light emitting diode (LED) mode, part of the light emission is confined and guided by the suspended waveguides. The in-plane propagation along the suspended waveguides is measured by a micro-transmittance setup. The on-chip data transmission is demonstrated for the proof-of-concept photonic integration. As the suspended p-n junction InGaN/GaN MQWs device operates under photodiode mode, the light is illuminated on the suspended waveguides with the aid of the micro-transmittance setup and, thus, coupled into the suspended waveguides. The guided light is finally sensed by the photodiode, and the induced photocurrent trace shows a distinct on/off switching performance. These experimental results indicate that the on-chip photonic integration is promising for the development of sophisticated integrated photonic circuits in the visible wavelength region.

  3. Reduction in leakage current in AlGaN/GaN HEMT with three Al-containing step-graded AlGaN buffer layers on silicon

    NASA Astrophysics Data System (ADS)

    Yu, Xinxin; Ni, Jinyu; Li, Zhonghui; Zhou, Jianjun; Kong, Cen

    2014-05-01

    AlGaN/GaN high-electron-mobility transistor (HEMT) structures with two and three Al-containing step-graded AlGaN buffer layers (BLs) were grown on silicon (111) substrates by metal organic chemical vapor deposition. Considerable tensile stress was observed in the GaN grown with only two 0.8 µm AlGaN BLs, while a large in-plane compression in GaN grown with three 2.3 µm AlGaN BLs. The reverse gate leakage current in the HEMT with three AlGaN BLs was approximately 0.1 µA/mm, which was more than one order of magnitude smaller than that for the HEMT with two AlGaN BLs. A three-terminal off-state breakdown voltage of 265 V and a vertical gate-to-substrate breakdown voltage of 510 V were obtained in the HEMT with three AlGaN BLs. Detailed analysis was performed on the basis of the structural properties of AlGaN/GaN heterostructures.

  4. Deep ultraviolet photoluminescence of Tm-doped AlGaN alloys

    SciTech Connect

    Nepal, N.; Zavada, J. M.; Lee, D. S.; Steckl, A. J.; Sedhain, A.; Lin, J. Y.; Jiang, H. X.

    2009-03-16

    The ultraviolet (UV) photoluminescence (PL) properties of Tm-doped Al{sub x}Ga{sub 1-x}N (0.39{<=}x{<=}1) alloys grown by solid-source molecular beam epitaxy were probed using above-bandgap excitation from a laser source at 197 nm. The PL spectra show dominant UV emissions at 298 and 358 nm only for samples with x=1 and 0.81. Temperature dependence of the PL intensities of these emission lines reveals exciton binding energies of 150 and 57 meV, respectively. The quenching of these UV emissions appears related to the thermal activation of the excitons bound to rare-earth structured isovalent (RESI) charge traps, which transfer excitonic energy to Tm{sup 3+} ions resulting in the UV emissions. A model of the RESI trap levels in AlGaN alloys is presented.

  5. Growth and characterization of AlGaN films on patterned sapphire substrates

    NASA Astrophysics Data System (ADS)

    Kwak, Y. S.; Lee, D. S.; Kim, K. H.; Kim, W. H.; Moon, S. W.

    2011-12-01

    A GaN film and two AlGaN films with Al compositions of 5% and 10% have been grown on the patterned sapphire substrates (PSSs) by metal organic chemical vapor deposition (MOCVD). Optical properties and crystalline qualities of the films have been investigated. The GaN film and the Al0.05Ga0.95N film are almost entirely coalesced except for some point defects. However, the Al0.1Ga0.9N film contains large pits encircled by small pits adjacent to them. The large pits are distributed in the same manner with the PSS arrangement. Dislocations and inversion domain boundaries were also observed in the Al0.1Ga0.9N film.

  6. Shapiro steps observed in a dc superconducting quantum interference device with multiple junctions in each arm

    NASA Astrophysics Data System (ADS)

    Chen, L.; Chen, P.; Ong, C. K.

    2002-02-01

    A high-Tc dc superconducting quantum interference device (SQUID) with three Josephson junctions (JJs) in series in each of its arms has been fabricated. Its Shapiro steps were studied using microwave (rf) radiation of 10 GHz and weak magnetic fields. The appearance of giant Shapiro steps and of some of half-integer steps was observed. Separation between the adjacent Shapiro steps could be tuned by rf magnetic fields and small external dc magnetic fields. This phenomenon was analyzed by phase locking the JJs in the SQUID.

  7. Deterministic coupling of a system of multiple quantum dots to a single photonic cavity mode

    NASA Astrophysics Data System (ADS)

    Lyasota, A.; Jarlov, C.; Gallo, P.; Rudra, A.; Dwir, B.; Kapon, E.

    2017-07-01

    We fabricated and studied a system comprising four site-controlled semiconductor quantum dots (QDs) embedded in a linear photonic crystal membrane cavity. The excellent position control and small spectral broadening permit coupling of the emission of all four QDs to the same photonic cavity modes. This is corroborated by co-polarization of the QD and cavity emission lines, as well as reduction in decay time, both with characteristic dependence on QD-cavity energy detuning. Scaling up to larger QD systems is discussed.

  8. Temperature dependent photoluminescence and micromapping of multiple stacks InAs quantum dots

    SciTech Connect

    Xu, Ming Jaffré, Alexandre Alvarez, José Kleider, Jean-Paul Boutchich, Mohamed; Jittrong, Apichat; Chokamnuai, Thitipong; Panyakeow, Somsak; Kanjanachuchai, Songphol

    2015-02-27

    We utilized temperature dependent photoluminescence (PL) techniques to investigate 1, 3 and 5 stack InGaAs quantum dots (QDs) grown on cross-hatch patterns. PL mapping can well reproduce the QDs distribution as AFM and position dependency of QD growth. It is possible to observe crystallographic dependent PL. The temperature dependent spectra exhibit the QDs energy distribution which reflects the size and shape. The inter-dot carrier coupling effect is observed and translated as a red shift of 120mV on the [1–10] direction peak is observed at 30K on 1 stack with regards to 3 stacks samples, which is assigned to lateral coupling.

  9. Improving hole injection and carrier distribution in InGaN light-emitting diodes by removing the electron blocking layer and including a unique last quantum barrier

    SciTech Connect

    Cheng, Liwen Chen, Haitao; Wu, Shudong

    2015-08-28

    The effects of removing the AlGaN electron blocking layer (EBL), and using a last quantum barrier (LQB) with a unique design in conventional blue InGaN light-emitting diodes (LEDs), were investigated through simulations. Compared with the conventional LED design that contained a GaN LQB and an AlGaN EBL, the LED that contained an AlGaN LQB with a graded-composition and no EBL exhibited enhanced optical performance and less efficiency droop. This effect was caused by an enhanced electron confinement and hole injection efficiency. Furthermore, when the AlGaN LQB was replaced with a triangular graded-composition, the performance improved further and the efficiency droop was lowered. The simulation results indicated that the enhanced hole injection efficiency and uniform distribution of carriers observed in the quantum wells were caused by the smoothing and thinning of the potential barrier for the holes. This allowed a greater number of holes to tunnel into the quantum wells from the p-type regions in the proposed LED structure.

  10. Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency

    NASA Astrophysics Data System (ADS)

    Huang, Xuanqi; Fu, Houqiang; Chen, Hong; Zhang, Xiaodong; Lu, Zhijian; Montes, Jossue; Iza, Michael; DenBaars, Steven P.; Nakamura, Shuji; Zhao, Yuji

    2017-04-01

    We demonstrate the nonpolar and semipolar InGaN/GaN multiple-quantum-well (MQW) solar cells grown on the nonpolar m-plane and semipolar ( 20 2 ¯ 1 ) plane bulk GaN substrates. The optical properties and photovoltaic performance of the nonpolar and semipolar InGaN solar cells were systematically studied, and the results were compared to the conventional polar c-plane devices. The absorption spectra, current density-voltage (J-V) characteristics, external quantum efficiency (EQE), and internal quantum efficiency (IQE) were measured for nonpolar m-plane, semipolar ( 20 2 ¯ 1 ) plane, and polar c-plane InGaN/GaN MQW solar cells. Nonpolar m-plane InGaN/GaN MQW solar cells showed the best performance across all devices, with a high open-circuit voltage of 2.32 V, a low bandgap-voltage offset of 0.59 V, and the highest EQE and IQE. In contrast, the polar c-plane device showed the lowest EQE despite the highest absorption spectra. This huge difference is attributed to the better carrier transport and collection on nonpolar m-plane devices due to the reduced polarization effects, which were further confirmed by bias-dependent EQE measurements and energy band diagram simulations. This study demonstrates the high potential of nonpolar and semipolar InGaN solar cells and can serve as guidance for the future design and fabrication of high efficiency III-nitride solar cells.

  11. Femtosecond Pulse Distortion by Diffraction from Semi-insulating Multiple Quantum Wells

    NASA Astrophysics Data System (ADS)

    Brubaker, R. M.; Dinu, M.; Nolte, D. D.; Melloch, M. R.; Weiner, A. M.

    1996-03-01

    We have performed nondegenerate four-wave mixing of ultrafast pulses from photorefractive quantum wells.(Q. Wang, R. M. Brubaker, D. D. Nolte and M. R. Melloch, J. Opt. Soc. Am. 9), 1626 (1992) This work is a first step towards performing dynamic femtosecond pulse shaping.(A. M. Weiner, Prog. Quant. Electr. 19), 161 (1995) The pulse shape is changed by the amplitude and phase of gratings written by an above-gap laser in steady-state. We use electric field cross-correlation measurements to detect the change in pulse shape. The gratings are formed by space charge gratings trapped at deep level defects. For pulse shaping, a diffraction spectrum is desired to be flat over 10 nm to minimize pulse distortion. The spectrum depends on the distribution of oscillator strength, which is a sensitive function of the quantum well parameters. We show that diffraction of a pulse with a center wavelength displaced from the diffraction peak results in significant pulse broadening by over a factor of two.

  12. Graphene Quantum Dots Downregulate Multiple Multidrug-Resistant Genes via Interacting with Their C-Rich Promoters.

    PubMed

    Luo, Chao; Li, Yanfang; Guo, Lijuan; Zhang, Fangwei; Liu, Hui; Zhang, Jiali; Zheng, Jing; Zhang, Jingyan; Guo, Shouwu

    2017-07-27

    Multidrug resistance (MDR) is the major factor in the failure of many forms of chemotherapy, mostly due to the increased efflux of anticancer drugs that mediated by ATP-binding cassette (ABC) transporters. Therefore, inhibiting ABC transporters is one of effective methods of overcoming MDR. However, high enrichment of ABC transporters in cells and their broad substrate spectra made to circumvent MDR are almost insurmountable by a single specific ABC transporter inhibitor. Here, this study demonstrates that graphene quantum dots (GQDs) could downregulate the expressions of P-glycoprotein, multidrug resistance protein MRP1, and breast cancer resistance protein genes via interacting with C-rich regions of their promoters. This is the first example that a single reagent could suppress multiple MDR genes, suggesting that it will be possible to target multiple ABC transporters simultaneously with a single reagent. The inhibitory ability of the GQDs to these drug-resistant genes is validated further by reversing the doxorubicin resistance of MCF-7/ADR cells. Notably, GQDs have superb chemical and physical properties, unique structure, low toxicity, and high biocompatibility; hence, their capability of inhibiting multiple drug-resistant genes holds great potential in cancer therapy. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells

    DOE PAGES

    Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel; ...

    2012-01-15

    We report on the thermal evolution of the photoluminescence (PL) from high In-content InN/In{sub 0.9}Ga{sub 0.1}N multiple-quantum wells (MQWs) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire templates. The structural quality and the well/barrier thickness uniformity in the MQW structure are assessed by X-ray diffraction and transmission electron microscopy measurements. PL results are compared with the luminescence from a 1-{mu}m-thick InN reference sample. In both cases, the dominant low-temperature (5 K) PL emission peaks at {proportional_to}0.73 eV with a full width at half maximum of {proportional_to}86 meV. The InN layer displays an S-shape evolution of the emission peak energy with temperature,more » explained in terms of carrier localization. A carrier localization energy of {proportional_to}12 meV is estimated for the InN layer, in good agreement with the expected carrier concentration. In the case of the MQW structure, an enhancement of the carrier localization associated to the piezoelectric field results in an improved thermal stability of the PL intensity, reaching an internal quantum efficiency of {proportional_to}16%. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)« less

  14. Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells

    DOE PAGES

    Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel; ...

    2012-01-15

    We report on the thermal evolution of the photoluminescence (PL) from high In-content InN/In{sub 0.9}Ga{sub 0.1}N multiple-quantum wells (MQWs) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire templates. The structural quality and the well/barrier thickness uniformity in the MQW structure are assessed by X-ray diffraction and transmission electron microscopy measurements. PL results are compared with the luminescence from a 1-{mu}m-thick InN reference sample. In both cases, the dominant low-temperature (5 K) PL emission peaks at {proportional{sub to}}0.73 eV with a full width at half maximum of {proportional{sub to}}86 meV. The InN layer displays an S-shape evolution of the emission peak energymore » with temperature, explained in terms of carrier localization. A carrier localization energy of {proportional{sub to}}12 meV is estimated for the InN layer, in good agreement with the expected carrier concentration. In the case of the MQW structure, an enhancement of the carrier localization associated to the piezoelectric field results in an improved thermal stability of the PL intensity, reaching an internal quantum efficiency of {proportional{sub to}}16%. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)« less

  15. Enhanced power conversion efficiency in InGaN-based solar cells via graded composition multiple quantum wells.

    PubMed

    Tsai, Yu-Lin; Wang, Sheng-Wen; Huang, Jhih-Kai; Hsu, Lung-Hsing; Chiu, Ching-Hsueh; Lee, Po-Tsung; Yu, Peichen; Lin, Chien-Chung; Kuo, Hao-Chung

    2015-11-30

    This work demonstrates the enhanced power conversion efficiency (PCE) in InGaN/GaN multiple quantum well (MQWs) solar cells with gradually decreasing indium composition in quantum wells (GQWs) toward p-GaN as absorber. The GQW can improve the fill factor from 42% to 62% and enhance the short current density from 0.8 mA/cm2 to 0.92 mA/cm2, as compares to the typical MQW solar cells. As a result, the PCE is boosted from 0.63% to 1.11% under AM1.5G illumination. Based on simulation and experimental results, the enhanced PCE can be attributed to the improved carrier collection in GQW caused by the reduction of potential barriers and piezoelectric polarization induced fields near the p-GaN layer. The presented concept paves a way toward highly efficient InGaN-based solar cells and other GaN-related MQW devices.

  16. Multiple environment single system quantum mechanical/molecular mechanical (MESS-QM/MM) calculations. 1. Estimation of polarization energies

    DOE PAGES

    Sodt, Alexander J.; Mei, Ye; Konig, Gerhard; ...

    2014-10-16

    In combined quantum mechanical/molecular mechanical (QM/MM) free energy calculations, it is often advantageous to have a frozen geometry for the quantum mechanical (QM) region. For such multiple-environment single-system (MESS) cases, two schemes are proposed here for estimating the polarization energy: the first scheme, termed MESS-E, involves a Roothaan step extrapolation of the self-consistent field (SCF) energy; whereas the other scheme, termed MESS-H, employs a Newton–Raphson correction using an approximate inverse electronic Hessian of the QM region (which is constructed only once). Both schemes are extremely efficient, because the expensive Fock updates and SCF iterations in standard QM/MM calculations are completelymore » avoided at each configuration. Here, they produce reasonably accurate QM/MM polarization energies: MESS-E can predict the polarization energy within 0.25 kcal/mol in terms of the mean signed error for two of our test cases, solvated methanol and solvated β-alanine, using the M06-2X or ωB97X-D functionals; MESS-H can reproduce the polarization energy within 0.2 kcal/mol for these two cases and for the oxyluciferin–luciferase complex, if the approximate inverse electronic Hessians are constructed with sufficient accuracy.« less

  17. Control of Multiple Exciton Generation and Electron-Phonon Coupling by Interior Nanospace in Hyperstructured Quantum Dot Superlattice.

    PubMed

    Chang, I-Ya; Kim, DaeGwi; Hyeon-Deuk, Kim

    2017-09-20

    The possibility of precisely manipulating interior nanospace, which can be adjusted by ligand-attaching down to the subnanometer regime, in a hyperstructured quantum dot (QD) superlattice (QDSL) induces a new kind of collective resonant coupling among QDs and opens up new opportunities for developing advanced optoelectric and photovoltaic devices. Here, we report the first real-time dynamics simulations of the multiple exciton generation (MEG) in one-, two-, and three-dimensional (1D, 2D, and 3D) hyperstructured H-passivated Si QDSLs, accounting for thermally fluctuating band energies and phonon dynamics obtained by finite-temperature ab initio molecular dynamics simulations. We computationally demonstrated that the MEG was significantly accelerated, especially in the 3D QDSL compared to the 1D and 2D QDSLs. The MEG acceleration in the 3D QDSL was almost 1.9 times the isolated QD case. The dimension-dependent MEG acceleration was attributed not only to the static density of states but also to the dynamical electron-phonon couplings depending on the dimensionality of the hyperstructured QDSL, which is effectively controlled by the interior nanospace. Such dimension-dependent modifications originated from the short-range quantum resonance among component QDs and were intrinsic to the hyperstructured QDSL. We propose that photoexcited dynamics including the MEG process can be effectively controlled by only manipulating the interior nanospace of the hyperstructured QDSL without changing component QD size, shape, compositions, ligand, etc.

  18. InGaN/GaN multiple quantum well for fast scintillation application: radioluminescence and photoluminescence study.

    PubMed

    Hospodková, Alice; Nikl, Martin; Pacherová, Oliva; Oswald, Jiří; Brůža, Petr; Pánek, Dalibor; Foltynski, Bartosz; Hulicius, Eduard; Beitlerová, Alena; Heuken, Michael

    2014-11-14

    We prepare InGaN/GaN multiple quantum well (MQW) structure by metal-organic vapour phase epitaxy and characterize it by fine XRD measurements. We demonstrate its suitability for scintillator application including a unique measurement of wavelength-resolved scintillation response under nanosecond pulse soft x-ray source in extended dynamical and time scales. The photoluminescence and radioluminescence were measured: we have shown that the ratio of the intensity of quantum well (QW) exciton luminescence to the intensity of the yellow luminescence (YL) band IQW/IYL depends strongly on the type and intensity of excitation. Slower scintillation decay measured at YL band maximum confirmed the presence of several radiative recombination centres responsible for wide YL band, which also partially overlap with the QW peak. Further improvements of the structure are suggested, but even the presently reported decay characteristics of the excitonic emission in MQW are better compared to the currently widely used single crystal YAP:Ce or YAG:Ce scintillators. Thus, such a type of a semiconductor scintillator is highly promising for fast detection of soft x-ray and related beam diagnostics.

  19. InGaN/GaN multiple quantum well for fast scintillation application: radioluminescence and photoluminescence study

    NASA Astrophysics Data System (ADS)

    Hospodková, Alice; Nikl, Martin; Pacherová, Oliva; Oswald, Jiří; Brůža, Petr; Pánek, Dalibor; Foltynski, Bartosz; Hulicius, Eduard; Beitlerová, Alena; Heuken, Michael

    2014-11-01

    We prepare InGaN/GaN multiple quantum well (MQW) structure by metal-organic vapour phase epitaxy and characterize it by fine XRD measurements. We demonstrate its suitability for scintillator application including a unique measurement of wavelength-resolved scintillation response under nanosecond pulse soft x-ray source in extended dynamical and time scales. The photoluminescence and radioluminescence were measured: we have shown that the ratio of the intensity of quantum well (QW) exciton luminescence to the intensity of the yellow luminescence (YL) band IQW/IYL depends strongly on the type and intensity of excitation. Slower scintillation decay measured at YL band maximum confirmed the presence of several radiative recombination centres responsible for wide YL band, which also partially overlap with the QW peak. Further improvements of the structure are suggested, but even the presently reported decay characteristics of the excitonic emission in MQW are better compared to the currently widely used single crystal YAP:Ce or YAG:Ce scintillators. Thus, such a type of a semiconductor scintillator is highly promising for fast detection of soft x-ray and related beam diagnostics.

  20. Photoexcited electron and hole dynamics in semiconductor quantum dots: phonon-induced relaxation, dephasing, multiple exciton generation and recombination

    NASA Astrophysics Data System (ADS)

    Hyeon-Deuk, Kim; Prezhdo, Oleg V.

    2012-09-01

    Photoexcited dynamics of electrons and holes in semiconductor quantum dots (QD), including phonon-induced relaxation, multiple exciton generation, fission and recombination (MEG, MEF and MER), were simulated by combining ab initio time-dependent density functional theory and non-adiabatic molecular dynamics. These nonequilibrium phenomena govern the optical properties and photoexcited dynamics of QDs, determining the branching between electronic processes and thermal energy losses. Our approach accounts for QD size and shape as well as defects, core-shell distribution, surface ligands and charge trapping, which significantly influence the properties of photoexcited QDs. The method creates an explicit time-domain representation of photoinduced processes and describes various kinetic regimes owing to the non-perturbative treatment of quantum dynamics. QDs of different sizes and materials, with and without ligands, are considered. The simulations provide direct evidence that the high-frequency ligand modes on the QD surface play a pivotal role in the electron-phonon relaxation, MEG, MEF and MER. The insights reported here suggest novel routes for controlling the photoinduced processes in semiconductor QDs and lead to new design principles for increasing the efficiencies of photovoltaic devices.

  1. Three Temperature Regimes in Superconducting Photon Detectors: Quantum, Thermal and Multiple Phase-Slips as Generators of Dark Counts

    PubMed Central

    Murphy, Andrew; Semenov, Alexander; Korneev, Alexander; Korneeva, Yulia; Gol’tsman, Gregory; Bezryadin, Alexey

    2015-01-01

    We perform measurements of the switching current distributions of three w ≈ 120 nm wide, 4 nm thick NbN superconducting strips which are used for single-photon detectors. These strips are much wider than the diameter of the vortex cores, so they are classified as quasi-two-dimensional (quasi-2D). We discover evidence of macroscopic quantum tunneling by observing the saturation of the standard deviation of the switching distributions at temperatures around 2 K. We analyze our results using the Kurkijärvi-Garg model and find that the escape temperature also saturates at low temperatures, confirming that at sufficiently low temperatures, macroscopic quantum tunneling is possible in quasi-2D strips and can contribute to dark counts observed in single photon detectors. At the highest temperatures the system enters a multiple phase-slip regime. In this range single phase-slips are unable to produce dark counts and the fluctuations in the switching current are reduced. PMID:25988591

  2. Three temperature regimes in superconducting photon detectors: quantum, thermal and multiple phase-slips as generators of dark counts.

    PubMed

    Murphy, Andrew; Semenov, Alexander; Korneev, Alexander; Korneeva, Yulia; Gol'tsman, Gregory; Bezryadin, Alexey

    2015-05-19

    We perform measurements of the switching current distributions of three w ≈ 120 nm wide, 4 nm thick NbN superconducting strips which are used for single-photon detectors. These strips are much wider than the diameter of the vortex cores, so they are classified as quasi-two-dimensional (quasi-2D). We discover evidence of macroscopic quantum tunneling by observing the saturation of the standard deviation of the switching distributions at temperatures around 2 K. We analyze our results using the Kurkijärvi-Garg model and find that the escape temperature also saturates at low temperatures, confirming that at sufficiently low temperatures, macroscopic quantum tunneling is possible in quasi-2D strips and can contribute to dark counts observed in single photon detectors. At the highest temperatures the system enters a multiple phase-slip regime. In this range single phase-slips are unable to produce dark counts and the fluctuations in the switching current are reduced.

  3. Separation of isotropic chemical and second-order quadrupolar shifts by multiple-quantum double rotation NMR.

    PubMed

    Hung, Ivan; Wong, Alan; Howes, Andy P; Anupõld, Tiit; Samoson, Ago; Smith, Mark E; Holland, Diane; Brown, Steven P; Dupree, Ray

    2009-04-01

    Using a two-dimensional multiple-quantum (MQ) double rotation (DOR) experiment the contributions of the chemical shift and quadrupolar interaction to isotropic resonance shifts can be completely separated. Spectra were acquired using a three-pulse triple-quantum z-filtered pulse sequence and subsequently sheared along both the nu(1) and nu(2) dimensions. The application of this method is demonstrated for both crystalline (RbNO(3)) and amorphous samples (vitreous B(2)O(3)). The existence of the two rubidium isotopes ((85)Rb and (87)Rb) allows comparison of results for two nuclei with different spins (I=3/2 and 5/2), as well as different dipole and quadrupole moments in a single chemical compound. Being only limited by homogeneous line broadening and sample crystallinity, linewidths of approximately 0.1 and 0.2 ppm can be measured for (87)Rb in the quadrupolar and chemical shift dimensions, enabling highly accurate determination of the isotropic chemical shift and the quadrupolar product, P(Q). For vitreous B(2)O(3), the use of MQDOR allows the chemical shift and electric field gradient distributions to be directly determined-information that is difficult to obtain otherwise due to the presence of second-order quadrupolar broadening.

  4. An approach to high efficiencies using GaAs/GaInNAs multiple quantum well and superlattice solar cell

    NASA Astrophysics Data System (ADS)

    Courel, Maykel; Rimada, Julio C.; Hernández, Luis

    2012-09-01

    A new type of photovoltaic device where GaAs/GaInNAs multiple quantum wells (MQW) or superlattice (SL) are inserted in the i-region of a GaAs p-i-n solar cell (SC) is presented. The results suggest the device can reach record efficiencies for single-junction solar cells. A theoretical model is developed to study the performance of this device. The conversion efficiency as a function of wells width and depth is modeled for MQW solar cells. It is shown that the MQW solar cells reach high conversion efficiency values. A study of the SL solar cell viability is also presented. The conditions for resonant tunneling are established by the matrix transfer method for a superlattice with variable quantum wells width. The effective density of states and the absorption coefficient for SL structure are calculated in order to determinate the J-V characteristic. The influence of superlattice length on the conversion efficiency is researched, showing a better performance when width and cluster numbers are increased. The SL solar cell conversion efficiency is compared with the maximum conversion efficiency obtained for the MQW solar cell and shows an efficiency enhancement.

  5. Piezoelectric Effects on the Optical Properties of GaN/Al(x)Ga(1-x)N Multiple Quantum Wells

    SciTech Connect

    Botchkarev, A.; Chow, W.W.; Jiang, H.X.; Kim, H.S.; Lin, J.Y.; Morkoc, H.

    1998-11-10

    Piezoelectric effects on the optical properties of GaN/AlGaN multiple quantum wells (MQWS) have been investigated by picosecond time-resolved photoluminescence (PL) measurements. For MQWS with well thickness 30 and 40 the excitonic transition peak positions at 10 K in continuous wave (CW) spectra are red-shifted with respect to the GaN epilayer by 17 meV and 57 meV, respectively. The time-resolved PL spectra of the 30 and 40 well MQWS reveal that the excitonic transition is in fact blue-shifted at early delay times due to quantum confinement of carriers. The spectral peak position shifts toward lower energies as the delay time increases and becomes red-shifted at longer delay times. We have demonstrated that the results described above is due to the presence of the piezoelectric field in the GaN wells of GaN/AlGaN MQWS subject to elastic strain together with screening of the photoexcited carriers. By comparing experimental and calculation results, we conclude that the piezoelectric field strength in GaN/Al.15G~.85N MQWS has a lower limit value of about 560 kV/cm: The electron and hole wave function distributions have also been obtained. The implication of our findings on the practical applications of GaN based optoelectronic devices is also discussed.

  6. Multiple environment single system quantum mechanical/molecular mechanical (MESS-QM/MM) calculations. 1. Estimation of polarization energies

    SciTech Connect

    Sodt, Alexander J.; Mei, Ye; Konig, Gerhard; Tao, Peng; Steele, Ryan P.; Brooks, Bernard R.; Shao, Yihan

    2014-10-16

    In combined quantum mechanical/molecular mechanical (QM/MM) free energy calculations, it is often advantageous to have a frozen geometry for the quantum mechanical (QM) region. For such multiple-environment single-system (MESS) cases, two schemes are proposed here for estimating the polarization energy: the first scheme, termed MESS-E, involves a Roothaan step extrapolation of the self-consistent field (SCF) energy; whereas the other scheme, termed MESS-H, employs a Newton–Raphson correction using an approximate inverse electronic Hessian of the QM region (which is constructed only once). Both schemes are extremely efficient, because the expensive Fock updates and SCF iterations in standard QM/MM calculations are completely avoided at each configuration. Here, they produce reasonably accurate QM/MM polarization energies: MESS-E can predict the polarization energy within 0.25 kcal/mol in terms of the mean signed error for two of our test cases, solvated methanol and solvated β-alanine, using the M06-2X or ωB97X-D functionals; MESS-H can reproduce the polarization energy within 0.2 kcal/mol for these two cases and for the oxyluciferin–luciferase complex, if the approximate inverse electronic Hessians are constructed with sufficient accuracy.

  7. Nonlinear absorption properties of AlGaAs/GaAs multiple quantum wells grown by metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Lee, Hsing-Chung; Kost, A.; Kawase, M.; Hariz, A.; Dapkus, P. Daniel

    1988-01-01

    The nonlinear absorption properties of the excitonic resonances associated with multiple quantum wells (MQWs) in AlGaAs/GaAs grown by metalorganic chemical vapor deposition are reported. The dependence of the saturation properties on growth parameters, especially growth temperature, and the well width are described. The minimum measured saturation intensity for these materials is 250 W/sq cm, the lowest reported value to date. The low saturation intensities are the result of excellent minority carrier properties. A systematic study of minority carrier lifetimes in quantum wells are reported. Lifetimes range from 50-350 ns depending on growth temperature and well width. When corrected for lateral diffusion effects and the measured minority carrier lifetime, the saturation data suggest that saturation intensities as low as 2.3 W/sq cm can be achieved in this system. The first measurements of the dependence of the exciton area and the magnitude of the excitonic absorption on well width are prsented. The growth of MQW structures on transparent GaP substrates is demonstrated and the electroabsorption properties of these structures are reviewed.

  8. Nonlinear absorption properties of AlGaAs/GaAs multiple quantum wells grown by metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Lee, Hsing-Chung; Kost, A.; Kawase, M.; Hariz, A.; Dapkus, P. Daniel

    1988-01-01

    The nonlinear absorption properties of the excitonic resonances associated with multiple quantum wells (MQWs) in AlGaAs/GaAs grown by metalorganic chemical vapor deposition are reported. The dependence of the saturation properties on growth parameters, especially growth temperature, and the well width are described. The minimum measured saturation intensity for these materials is 250 W/sq cm, the lowest reported value to date. The low saturation intensities are the result of excellent minority carrier properties. A systematic study of minority carrier lifetimes in quantum wells are reported. Lifetimes range from 50-350 ns depending on growth temperature and well width. When corrected for lateral diffusion effects and the measured minority carrier lifetime, the saturation data suggest that saturation intensities as low as 2.3 W/sq cm can be achieved in this system. The first measurements of the dependence of the exciton area and the magnitude of the excitonic absorption on well width are prsented. The growth of MQW structures on transparent GaP substrates is demonstrated and the electroabsorption properties of these structures are reviewed.

  9. Carrier localization in InN/InGaN multiple-quantum wells with high In-content

    NASA Astrophysics Data System (ADS)

    Valdueza-Felip, S.; Rigutti, L.; Naranjo, F. B.; Ruterana, P.; Mangeney, J.; Julien, F. H.; González-Herráez, M.; Monroy, E.

    2012-08-01

    We study the carrier localization in InN/In0.9Ga0.1N multiple-quantum-wells (MQWs) and bulk InN by means of temperature-dependent photoluminescence and pump-probe measurements at 1.55 μm. The S-shaped thermal evolution of the emission energy of the InN film is attributed to carrier localization at structural defects with an average localization energy of ˜12 meV. Carrier localization is enhanced in the MQWs due to well/barrier thickness and ternary alloy composition fluctuations, leading to a localization energy above 35 meV and longer carrier relaxation time. As a result, the luminescence efficiency in the MQWs is improved by a factor of five over bulk InN.

  10. Atmospheric-pressure epitaxial growth technique of a multiple quantum well by mist chemical vapor deposition based on Leidenfrost droplets

    NASA Astrophysics Data System (ADS)

    Kawaharamura, Toshiyuki; Dang, Giang T.; Nitta, Noriko

    2016-10-01

    A multiple quantum well α-Fe2O3/α-Ga2O3 with parallel and coherent formation of uniform and highly single-crystalline layers on a sapphire substrate has been fabricated by open-air atmospheric-pressure solution-processed mist chemical vapor deposition (Mist CVD). This report demonstrates that complicated structures with atomic-level control can be fabricated even in non-vacuum conditions by the Mist CVD. This can be achieved via the precise control of the precursor flow and ambient temperature combined with the formation of mist droplets of the special Leidenfrost state, which increased the atomic migration length by 108 times more than that of traditional vacuum techniques. This work could be a milestone in the transformation from vacuum to non-vacuum thin film deposition techniques towards a green and sustainable industry.

  11. Optical bistability and multistability in a defect slab doped by GaAs/AlGaAs multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Seyyed, Hossein Asadpour; G, Solookinejad; M, Panahi; E Ahmadi, Sangachin

    2016-05-01

    We proposed a new model for controlling the optical bistability (OB) and optical multistability (OM) in a defect slab doped with four-level GaAs/AlGaAs multiple quantum wells with 15 periods of 17.5 nm GaAs wells and 15-nm Al0.3 Ga0.7As barriers. The effects of biexciton energy renormalization, exciton spin relaxation, and thickness of the slab on the OB and OM properties of the defect slab were theoretically investigated. We found that the transition from OB to OM or vice versa is possible by adjusting the controllable parameters in a lab. Moreover, the transmission, reflection, and absorption properties of the weak probe light through the slab were also discussed in detail.

  12. Low-temperature pulsed sputtering growth of InGaN multiple quantum wells for photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Arakawa, Yasuaki; Ueno, Kohei; Noguchi, Hidenari; Ohta, Jitsuo; Fujioka, Hiroshi

    2017-03-01

    We investigated the potential of low-temperature pulsed sputtering deposition (PSD) for the fabrication of high-In-composition thick InGaN multiple quantum wells (MQWs). Low-temperature PSD growth allowed the growth of a 100-period 1.2-nm-thick In0.3Ga0.7N MQW on GaN bulk crystals without apparent lattice relaxation. We fabricated a nitride-based photovoltaic device using 100-period In0.3Ga0.7N MQW absorption layers and obtained a clear photovoltaic response with an open-circuit voltage of 1.24 V, a short-circuit current density of 1.76 mA·cm‑2, and a maximum output power density of 1.10 mW·cm‑2 under 1 sun with air mass 1.5 illumination.

  13. Membrane-type photonic integration of InGaN/GaN multiple-quantum-well diodes and waveguide

    NASA Astrophysics Data System (ADS)

    Gao, Xumin; Bai, Dan; Cai, Wei; Xu, Yin; Yuan, Jialei; Yang, Yongchao; Zhu, Guixia; Cao, Xun; Zhu, Hongbo; Wang, Yongjin

    2017-02-01

    We report here a membrane-type integration of InGaN/GaN multiple-quantum-well diodes (MQWDs) with a waveguide to build a highly integrated photonic system to perform functionalities on a GaN-on-silicon platform. Suspended MQWDs can be used as either for light-emitting diode (LED) or photodiode. In the fabricated photonic system, part of the LED emission is coupled into a suspended waveguide, and the guided light laterally propagates along the waveguide and is finally sensed by the photodiode. The photonic system can detect the in-plane guided light and the external incident light simultaneously. Planar optical communication experimentally demonstrates that the proof-of-concept monolithic photonic integration system can achieve the in-plane visible light communication. This work paves the way towards novel active electro-optical sensing systems and planar optical communication in the visible range.

  14. Imaging of multiple mRNA targets using quantum dot based in situ hybridization and spectral deconvolution in clinical biopsies

    SciTech Connect

    Tholouli, Eleni; Hoyland, Judith A.; Di Vizio, Dolores; O'Connell, Fionnuala; MacDermott, Sarah A.; Twomey, David; Levenson, Richard; Yin, John A. Liu; Golub, Todd R.; Loda, Massimo; Byers, Richard . E-mail: r.byers@manchester.ac.uk

    2006-09-22

    Gene expression mapping using microarray analysis has identified useful gene signatures for predicting outcome. However, little of this has been translated into clinically effective diagnostic tools as microarrays require high quality fresh-frozen tissue samples. We describe a methodology of multiplexed in situ hybridization (ISH) using a novel combination of quantum dot (QD)-labeled oligonucleotide probes and spectral imaging analysis in routinely processed, formalin-fixed paraffin embedded human biopsies. The conditions for QD-ISH were optimized using a poly d(T) oligonucleotide in decalcified bone marrow samples. Single and multiplex QD-ISH was performed in samples with acute leukemia and follicular lymphoma using oligonucleotide probes for myeloperoxidase, bcl-2, survivin, and XIAP. Spectral imaging was used for post hybridization tissue analysis, enabling separation of spatially colocalized signals. The method allows quantitative characterization of multiple gene expression using non-bleaching fluorochromes. This is expected to facilitate multiplex in situ transcript detection in routinely processed human clinical tissue.

  15. Quantum dynamical response of ultracold few-boson ensembles in finite optical lattices to multiple interaction quenches

    NASA Astrophysics Data System (ADS)

    Neuhaus-Steinmetz, J.; Mistakidis, S. I.; Schmelcher, P.

    2017-05-01

    The correlated nonequilibrium quantum dynamics following a multiple interaction quench protocol for few-bosonic ensembles confined in finite optical lattices is investigated. The quenches give rise to an interwell tunneling and excite the cradle and a breathing mode. Several tunneling pathways open during the time interval of increased interactions, while only a few occur when the system is quenched back to its original interaction strength. The cradle mode, however, persists during and in between the quenches, while the breathing mode possesses distinct frequencies. The occupation of excited bands is explored in detail revealing a monotonic behavior with increasing quench amplitude and a nonlinear dependence on the duration of the application of the quenched interaction strength. Finally, a periodic population transfer between momenta for quenches of increasing interaction is observed, with a power-law frequency dependence on the quench amplitude. Our results open the possibility to dynamically manipulate various excited modes of the bosonic system.

  16. Resonant enhancement of second order sideband generation for intraexcitonic transitions in GaAs/AlGaAs multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Wagner, M.; Schneider, H.; Winnerl, S.; Helm, M.; Roch, T.; Andrews, A. M.; Schartner, S.; Strasser, G.

    2009-06-01

    We present an experimental study on efficient second order sideband generation in symmetric undoped GaAs/AlGaAs multiple quantum wells. A near-infrared laser tuned to excitonic interband transitions is mixed with an in-plane polarized terahertz beam from a free-electron laser. The terahertz beam is tuned either to the intraexcitonic heavy-hole 1s-2p transition or to the interexcitonic heavy-hole light-hole transition. We find strong evidence that the intraexcitonic transition is of paramount influence on n =±2 sideband generation, leading to an order-of-magnitude resonant enhancement of the conversion efficiency up to 0.1% at low temperature. At room temperature, the efficiency drops only by a factor of 7 for low terahertz powers.

  17. Extended defects in InGaAs/InGaAs strain-balanced multiple quantum wells for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Nasi, Lucia; Ferrari, Claudio; Lazzarini, Laura; Salviati, Giancarlo; Tundo, Stefania; Mazzer, Massimo; Clarke, Graham; Rohr, Carsten

    2002-12-01

    Different strain-balanced InGaAs/InGaAs multiple quantum wells (MQWs) were grown on (001) InP changing the In composition in the wells/barriers in order to extend the absorption edge beyond 2 μm for thermophotovoltaic applications. The strain increase in the structures results in the formation of isolated highly defected regions taking their origin from lateral layer thickness modulations. Experimental results are consistent with the existence of a critical elastic energy density for the development of MQW waviness. An empirical model for predicting the maximum number of layers that can be grown without modulations as a function of the strain energy stored in the MQW period is presented.

  18. Sensitivity enhancement in static solid-state NMR experiments via single- and multiple-quantum dipolar coherences.

    PubMed

    Gopinath, T; Veglia, Gianluigi

    2009-04-29

    We present a new method for enhancing the sensitivity in static solid-state NMR experiments for a gain in signal-to-noise ratio of up to 40%. This sensitivity enhancement is different from the corresponding solution NMR sensitivity enhancement schemes and is achieved by combining single- and multiple-quantum dipolar coherences. While this new approach is demonstrated for the polarization inversion spin exchange at magic angle (PISEMA) experiment, it can be generalized to the other separated local field experiments for solid-state NMR spectroscopy. This method will have a direct impact on solid-state NMR spectroscopy of liquid crystals as well as of membrane proteins aligned in lipid membranes.

  19. SIMQUADNMR: a program for simulation and interpretation of multiple quantum-filtered NMR spectra of quadrupolar nuclei.

    PubMed

    D'Amelio, Nicola; Gaggelli, Elena; Molteni, Elena; Valensin, Gianni

    2005-01-01

    In this paper, we present a computer program which simulates NMR multiple quantum-filtered spectra of quadrupolar nuclei as a function of physical parameters, of the type of experiment and experimental conditions. The program works by solving relaxation theory equations for the given system, and it can be useful in order to plan the ideal conditions to set up specific experiments or to give a physical interpretation of experimental results. The program allows to independently follow the dependence of individual coherences and relaxation rates as a function of up to 50 parameters regarding the physical properties of the system under investigation, sample conditions and instrumental setup making it an helpful tool also for teaching purposes.

  20. Degenerate four-wave mixing in room-temperature GaAs/GaAlAs multiple quantum well structures

    NASA Astrophysics Data System (ADS)

    Miller, D. A. B.; Chemla, D. S.; Eilenberger, D. J.; Smith, P. W.; Gossard, A. C.; Wiegman, W.

    1983-06-01

    Degenerate four-wave mixing (DFWM) is of current interest both for practical applications (e.g., phase conjugation) and as a physical probe. DFWM makes it possible to detect very small nonlinear changes in refraction. In connection with the present investigation, the first observations of DFWM in GaAs/GaAlAs multiple quantum well structures (MQW's) at room temperature are reported. By combining DFWM and nonlinear absorption results, a direct measurement of the nonlinear refraction near the band gap of the MQW is conducted. The obtained value is compared with previous estimates. The measurements are of practical importance for possible low-power optical devices compatible with laser diodes based either on DFWM, nonlinear refraction (such as optical bistability) of nonlinear absorption. The MQW samples were grown by molecular beam epitaxy (MBE) on GaAs substrates, with the MQW layers sandwiched between GaAlAs cap layers which are transparent at the considered wavelengths.

  1. Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications

    NASA Astrophysics Data System (ADS)

    Hospodková, Alice; Pangrác, Jiří; Kuldová, Karla; Nikl, Martin; Pacherová, Oliva; Oswald, Jiří; Hubáček, Tomáš; Zíková, Markéta; Brůža, Petr; Pánek, Dalibor; Blažek, Karel; Ledoux, Gilles; Dujardin, Christophe; Heuken, Michael; Hulicius, Eduard

    2016-02-01

    Fast scintillators are necessary for electron microscopes, as well as in many other application fields like medical diagnostics and therapy and fundamental science. InGaN/GaN multiple quantum well structures (QW) are perspective candidates due to strong exciton binding energy, high quantum efficiency, short decay time in order of ns and good radiation resistance. The aim of our work is to prepare scintillator structure with fast luminescence response and high intensity of light. InGaN/GaN multiple QW structures described here were prepared by metal-organic vapour phase epitaxy and characterized by high resolution X-ray diffraction measurements. We demonstrate structure suitability for scintillator application including a unique measurement of wavelength-resolved scintillation response under nanosecond pulse soft X-ray source in extended dynamical and time scales. The photo-, radio- and cathodo-luminescence (PL, RL, CL) were measured. We observed double peak luminescence governed by different recombination mechanisms: i) exciton in QW and ii) related to defects. We have shown that for obtaining fast and intensive luminescence response proper structure design is required. The radioluminescence decay time of QW exciton maximum decreased 4 times from 16 ns to 4 ns when the QW thickness was decreased from 2.4 nm to 2 nm. We have proved suitability of InGaN/GaN structures for fast scintillator application for electron or other particle radiation detection. For x-ray detection the fast scintillation response would be hard to achieve due to the dominant slow defect luminescence maximum.

  2. Optimized selective lactate excitation with a refocused multiple-quantum filter

    NASA Astrophysics Data System (ADS)

    Holbach, Mirjam; Lambert, Jörg; Johst, Sören; Ladd, Mark E.; Suter, Dieter

    2015-06-01

    Selective detection of lactate signals in in vivo MR spectroscopy with spectral editing techniques is necessary in situations where strong lipid or signals from other molecules overlap the desired lactate resonance in the spectrum. Several pulse sequences have been proposed for this task. The double-quantum filter SSel-MQC provides very good lipid and water signal suppression in a single scan. As a major drawback, it suffers from significant signal loss due to incomplete refocussing in situations where long evolution periods are required. Here we present a refocused version of the SSel-MQC technique that uses only one additional refocussing pulse and regains the full refocused lactate signal at the end of the sequence.

  3. Inductively coupled BCl3/Cl2 /Ar plasma etching of Al-rich AlGaN

    DOE PAGES

    Douglas, Erica A.; Sanchez, Carlos A.; Kaplar, Robert J.; ...

    2016-12-01

    Varying atomic ratios in compound semiconductors is well known to have large effects on the etching properties of the material. The use of thin device barrier layers, down to 25 nm, adds to the fabrication complexity by requiring precise control over etch rates and surface morphology. The effects of bias power and gas ratio of BCl3 to Cl2 for inductively coupled plasma etching of high Al content AlGaN were contrasted with AlN in this study for etch rate, selectivity, and surface morphology. Etch rates were greatly affected by both bias power and gas chemistry. Here we detail the effects ofmore » small variations in Al composition for AlGaN and show substantial changes in etch rate with regards to bias power as compared to AlN.« less

  4. Enhancing the light extraction efficiency of AlGaN deep ultraviolet light emitting diodes by using nanowire structures

    SciTech Connect

    Djavid, Mehrdad; Mi, Zetian

    2016-02-01

    The performance of conventional AlGaN deep ultraviolet light emitting diodes has been limited by the extremely low light extraction efficiency (<10%), due to the unique transverse magnetic (TM) polarized light emission. Here, we show that, by exploiting the lateral side emission, the extraction efficiency of TM polarized light can be significantly enhanced in AlGaN nanowire structures. Using the three-dimensional finite-difference time domain simulation, we demonstrate that the nanowire structures can be designed to inhibit the emission of guided modes and redirect trapped light into radiated modes. A light extraction efficiency of more than 70% can, in principle, be achieved by carefully optimizing the nanowire size, nanowire spacing, and p-GaN thickness.

  5. Atomic layer etching of GaN and AlGaN using directional plasma-enhanced approach

    NASA Astrophysics Data System (ADS)

    Ohba, Tomihito; Yang, Wenbing; Tan, Samantha; Kanarik, Keren J.; Nojiri, Kazuo

    2017-06-01

    The directional atomic layer etching (ALE) of GaN and AlGaN has been developed. The GaN ALE process consists of cyclic Cl2 plasma chemisorption and Ar ion removal. The etch per cycle (EPC) was 0.4 nm within the self-limiting regime, which is 50 to 100 V. The root-mean-square surface roughness R RMS was 0.6 nm, which was improved from an initial roughness of 0.8 nm. For AlGaN ALE, BCl3 was added to the chlorine step to obtain a smooth surface with R RMS of 0.3 nm and stoichiometry similar to the initial sample. The ultra smooth surface obtained by etching is promising for use in next-generation power devices.

  6. Electrical detection of kidney injury molecule-1 with AlGaN /GaN high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Wang, H. T.; Kang, B. S.; Ren, F.; Pearton, S. J.; Johnson, J. W.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.

    2007-11-01

    AlGaN /GaN high electron mobility transistors (HEMTs) were used to detect kidney injury molecule-1 (KIM-1), an important biomarker for early kidney injury detection. The gate region consisted of 5nm gold deposited onto the AlGaN surface. The gold was conjugated to highly specific KIM-1 antibodies through a self-assembled monolayer of thioglycolic acid. The HEMT source-drain current showed a clear dependence on the KIM-1 concentration in phosphate-buffered saline solution. The limit of detection was 1ng/ml using a 20×50μm2 gate sensing area. This approach shows potential for both preclinical and clinical kidney injury diagnosis with accurate, rapid, noninvasive, and high throughput capabilities.

  7. Frequency up-conversion in nonpolar a-plane GaN/AlGaN based multiple quantum wells optimized for applications with silicon solar cells

    SciTech Connect

    Radosavljević, S.; Radovanović, J. Milanović, V.; Tomić, S.

    2014-07-21

    We have described a method for structural parameters optimization of GaN/AlGaN multiple quantum well based up-converter for silicon solar cells. It involves a systematic tuning of individual step quantum wells by use of the genetic algorithm for global optimization. In quantum well structures, the up-conversion process can be achieved by utilizing nonlinear optical effects based on intersubband transitions. Both single and double step quantum wells have been tested in order to maximize the second order susceptibility derived from the density matrix formalism. The results obtained for single step wells proved slightly better and have been further pursued to obtain a more complex design, optimized for conversion of an entire range of incident photon energies.

  8. Growth of AlGaN under the conditions of significant gallium evaporation: Phase separation and enhanced lateral growth

    NASA Astrophysics Data System (ADS)

    Mayboroda, I. O.; Knizhnik, A. A.; Grishchenko, Yu. V.; Ezubchenko, I. S.; Zanaveskin, Maxim L.; Kondratev, O. A.; Presniakov, M. Yu.; Potapkin, B. V.; Ilyin, V. A.

    2017-09-01

    The growth kinetics of AlGaN in NH3 MBE under significant Ga desorption was studied. It was found that the addition of gallium stimulates 2D growth and provides better morphology of films compared to pure AlN. The effect was experimentally observed at up to 98% desorption of the impinging gallium. We found that under the conditions of significant thermal desorption, larger amounts of gallium were retained at lateral boundaries of 3D surface features than at flat terraces because of the higher binding energy of Ga atoms at specific surface defects. The selective accumulation of gallium resulted in an increase in the lateral growth component through the formation of the Ga-enriched AlGaN phase at boundaries of 3D surface features. We studied the temperature dependence of AlGaN growth rate and developed a kinetic model analytically describing this dependence. As the model was in good agreement with the experimental data, we used it to estimate the increase in the binding energy of Ga atoms at surface defects compared to terrace surface sites using data on the Ga content in different AlGaN phases. We also applied first-principles calculations to the thermodynamic analysis of stable configurations on the AlN surface and then used these surface configurations to compare the binding energy of Ga atoms at terraces and steps. Both first-principles calculations and analytical estimations of the experimental results gave similar values of difference in binding energies; this value is 0.3 eV. Finally, it was studied experimentally whether gallium can act as a surfactant in AlN growth by NH3 MBE at elevated temperatures. Gallium application has allowed us to grow a 300 nm thick AlN film with a RMS surface roughness of 2.2 Å over an area of 10 × 10 μm and a reduced density of screw dislocations.

  9. Improved performance in vertical GaN Schottky diode assisted by AlGaN tunneling barrier

    SciTech Connect

    Cao, Y.; Chu, R.; Li, R.; Chen, M.; Williams, A. J.

    2016-03-14

    In a vertical GaN Schottky barrier diode, the free electron concentration n in the 6-μm-thick drift layer was found to greatly impact the diode reverse leakage current, which increased from 2.1 × 10{sup −7} A to 3.9 × 10{sup −4} A as n increased from 7.5 × 10{sup 14 }cm{sup −3} to 6.3 × 10{sup 15 }cm{sup −3} at a reverse bias of 100 V. By capping the drift layer with an ultrathin 5-nm graded AlGaN layer, reverse leakage was reduced by more than three orders of magnitude with the same n in the drift layer. We attribute this to the increased Schottky barrier height with the AlGaN at the surface. Meanwhile, the polarization field within the graded AlGaN effectively shortened the depletion depth, which led to the formation of tunneling current at a relatively small forward bias. The turn-on voltage in the vertical Schottky diodes was reduced from 0.77 V to 0.67 V—an advantage in reducing conduction loss in power switching applications.

  10. Fabrication of AlGaN nanorods with different Al compositions for emission enhancement in UV range.

    PubMed

    Dai, Jiangping; Liu, Bin; Zhuang, Zhe; He, Guotang; Zhi, Ting; Tao, Tao; Xu, Qingjun; Li, Yi; Ge, Haixiong; Xie, Zili; Zhang, Rong

    2017-09-20

    Highly ordered AlxGa1-xN nanorods with varied aluminum alloy compositions (0.18 ≤ x ≤ 0.8) are fabricated with nanoimprint lithography and top-down dry etching techniques. And the structural properties and morphology are obtained by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Compared with as-grown AlGaN samples, nanorod samples reveal outstanding optical performance on account of strain releasing and light extraction enhancement. Through Raman scattering and cathodeluminescence measurements, it has been observed clear red-shifts of E2h modes and near band edge emission (NBE) peaks of AlGaN nanorods compared to the planar ones, indicating the residual strain releasing after nano-fabrication. The integrated intensities of NBE peaks of AlGaN nanorods manifest light emission enhancement up to 2.7 at deep-UV range. Finite-difference time-domain (FDTD) simulations have been adopted to investigate the light extraction and far-field distribution of such structures, it turned out that ordered nanorod array can enhance the TM polarized emission extraction 2-7 folds compared to the planar structure. The optical regulation in nanorod arrays should take the responsibility for the observed optical enhancements, which is proved by the far-field distribution of light, thus it can improve the performance of ultraviolet LEDs.

  11. Fabrication of AlGaN nanorods with different Al compositions for emission enhancement in UV range

    NASA Astrophysics Data System (ADS)

    Dai, Jiangping; Liu, Bin; Zhuang, Zhe; He, Guotang; Zhi, Ting; Tao, Tao; Xu, Qingjun; Li, Yi; Ge, Haixiong; Xie, Zili; Zhang, Rong

    2017-09-01

    Highly ordered AlxGa1‑xN nanorods with varied aluminum alloy compositions (0.18 ≤ x ≤ 0.8) are fabricated with nanoimprint lithography and top-down dry etching techniques. And the structural properties and morphology are obtained by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Compared with as-grown AlGaN samples, nanorod samples reveal outstanding optical performance on account of strain releasing and light extraction enhancement. Through Raman scattering and cathodeluminescence measurements, it has been observed clear red-shifts of E2h modes and near band edge emission (NBE) peaks of AlGaN nanorods compared to the planar ones, indicating the residual strain releasing after nano-fabrication. The integrated intensities of NBE peaks of AlGaN nanorods manifest light emission enhancement up to 2.7 at deep-UV range. Finite-difference time-domain (FDTD) simulations have been adopted to investigate the light extraction and far-field distribution of such structures, it turned out that ordered nanorod array can enhance the TM polarized emission extraction 2–7 folds compared to the planar structure. The optical regulation in nanorod arrays should take the responsibility for the observed optical enhancements, which is proved by the far-field distribution of light, thus it can improve the performance of ultraviolet LEDs.

  12. Strain-compensated AlGaN /GaN/InGaN cladding layers in homoepitaxial nitride devices

    NASA Astrophysics Data System (ADS)

    Czernecki, R.; Krukowski, S.; Targowski, G.; Prystawko, P.; Sarzynski, M.; Krysko, M.; Kamler, G.; Grzegory, I.; Leszczynski, M.; Porowski, S.

    2007-12-01

    One of the most important problems in III-nitride violet laser diode technology is the lattice mismatch between the AlGaN cladding layers and the rest of the epitaxial structure. For efficiently working devices, it is necessary to have both a high Al content and thick claddings. This leads, however, to severe sample bowing and even cracking of the upper layer. In this work, we propose a cladding structure of strain-compensated AlGaN /GaN/InGaN superlattice grown by metal-organic vapor phase epitaxy on bulk GaN substrates. Various thicknesses and compositions of the layers were employed. We measured the radius of bowing, lattice mismatches, aluminum and indium contents, and densities of threading dislocations. The proposed cladding structures suppress bowing and cracking, which are the two parasitic effects commonly experienced in laser diodes with bulk AlGaN claddings. The suppression of cracking and bowing is shown to occur due to modified strain energy distribution of the superlattices structure.

  13. Self-powered smart window controlled by a high open-circuit voltage InGaN/GaN multiple quantum well solar cell.

    PubMed

    Wu, Chia-Ching; Liou, Jian-Chiun; Diao, Chien-Chen

    2015-08-14

    A self-powered complementary electrochromic device (CECD) driven by a high open-circuit voltage InGaN/GaN multiple quantum well (MQW) solar cell has been designed. The coloration and bleaching time of the system were 5 and 8 s, respectively.

  14. Multiple exciton generation in quantum dots versus singlet fission in molecular chromophores for solar photon conversion.

    PubMed

    Beard, Matthew C; Johnson, Justin C; Luther, Joseph M; Nozik, Arthur J

    2015-06-28

    Both multiple exciton generation (MEG) in semiconductor nanocrystals and singlet fission (SF) in molecular chromophores have the potential to greatly increase the power conversion efficiency of solar cells for the production of solar electricity (photovoltaics) and solar fuels (artificial photosynthesis) when used in solar photoconverters. MEG creates two or more excitons per absorbed photon, and SF produces two triplet states from a single singlet state. In both cases, multiple charge carriers from a single absorbed photon can be extracted from the cell and used to create higher power conversion efficiencies for a photovoltaic cell or a cell that produces solar fuels, like hydrogen from water splitting or reduced carbon fuels from carbon dioxide and water (analogous to biological photosynthesis). The similarities and differences in the mechanisms and photoconversion cell architectures between MEG and SF are discussed.

  15. Multiple exciton generation in quantum dots versus singlet fission in molecular chromophores for solar photon conversion

    SciTech Connect

    Beard, M. C.; Johnson, J. C.; Luther, J. M.; Nozik, A. J.

    2015-05-18

    Both multiple exciton generation (MEG) in semiconductor nanocrystals and singlet fission (SF) in molecular chromophores have the potential to greatly increase the power conversion efficiency of solar cells for the production of solar electricity (photovoltaics) and solar fuels (artificial photosynthesis) when used in solar photoconverters. MEG creates two or more excitons per absorbed photon, and SF produces two triplet states from a single singlet state. In both cases, multiple charge carriers from a single absorbed photon can be extracted from the cell and used to create higher power conversion efficiencies for a photovoltaic cell or a cell that produces solar fuels, like hydrogen from water splitting or reduced carbon fuels from carbon dioxide and water (analogous to biological photosynthesis). The similarities and differences in the mechanisms and photoconversion cell architectures between MEG and SF are discussed.

  16. Multicolor Quantum Dot-Based Chemical Nose for Rapid and Array-Free Differentiation of Multiple Proteins.

    PubMed

    Xu, Qinfeng; Zhang, Yihong; Tang, Bo; Zhang, Chun-yang

    2016-02-16

    Nanomaterial-based differential sensors (e.g., chemical nose) have shown great potential for identification of multiple proteins because of their modulatable recognition and transduction capability but with the limitation of array separation, single-channel read-out, and long incubation time. Here, we develop a multicolor quantum dot (QD)-based multichannel sensing platform for rapid identification of multiple proteins in an array-free format within 1 min. A protein-binding dye of bromophenol blue (BPB) is explored as an efficient reversible quencher of QDs, and the mixture of BPB with multicolor QDs may generate the quenched QD-BPB complexes. The addition of proteins will disrupt the QD-BPB complexes as a result of the competitive protein-BPB binding, inducing the separation of BPB from the QDs and the generation of distinct fluorescence patterns. The multicolor patterns may be collected at a single-wavelength excitation and differentiated by a linear discriminant analysis (LDA). This multichannel sensing platform allows for the discrimination of ten proteins and seven cell lines with the fastest response rate reported to date, holding great promise for rapid and high-throughput medical diagnostics.

  17. Injection current dependences of electroluminescence transition energy in InGaN/GaN multiple quantum wells light emitting diodes under pulsed current conditions

    SciTech Connect

    Zhang, Feng; Ikeda, Masao Liu, Jianping; Zhang, Shuming; Zhou, Kun; Yang, Hui; Liu, Zongshun

    2015-07-21

    Injection current dependences of electroluminescence transition energy in blue InGaN/GaN multiple quantum wells light emitting diodes (LEDs) with different quantum barrier thicknesses under pulsed current conditions have been analyzed taking into account the related effects including deformation caused by lattice strain, quantum confined Stark effects due to polarization field partly screened by carriers, band gap renormalization, Stokes-like shift due to compositional fluctuations which are supposed to be random alloy fluctuations in the sub-nanometer scale, band filling effect (Burstein-Moss shift), and quantum levels in finite triangular wells. The bandgap renormalization and band filling effect occurring at high concentrations oppose one another, however, the renormalization effect dominates in the concentration range studied, since the band filling effect arising from the filling in the tail states in the valence band of quantum wells is much smaller than the case in the bulk materials. In order to correlate the carrier densities with current densities, the nonradiative recombination rates were deduced experimentally by curve-fitting to the external quantum efficiencies. The transition energies in LEDs both with 15 nm quantum barriers and 5 nm quantum barriers, calculated using full strengths of theoretical macroscopic polarization given by Barnardini and Fiorentini [Phys. Status Solidi B 216, 391 (1999)] are in excellent accordance with experimental results. The LED with 5 nm barriers has been shown to exhibit a higher transition energy and a smaller blue shift than those of LED with 15 nm barriers, which is mainly caused by the smaller internal polarization field in the quantum wells.

  18. Next Generation Photovoltaics Based on Multiple Exciton Generation in Quantum Dot Solar Cells

    NASA Astrophysics Data System (ADS)

    Nozik, Arthur J.

    Next Generation solar cells based onMultiple Exciton Generation (MEG) in semiconductorquantum dots (QDs) are described. This application of QDs depends upon efficient MEG in QDs incorporated into PV cells, followed by efficient exciton splitting into free electrons and holes and their efficient separation and collection in the cell contacts to produce multiple free carriers per absorbed photon. Using time-resolved transient absorption, bleaching, photoluminescence and THz spectroscopy, MEG has been initially confirmed in several Group IV-VI, III-V, II-VI, and IV colloidal semiconductor QDs. Some controversy using these techniques have now been attributed to effects of the variable of the QD surface chemisty and under certain conditions to artifacts arising from long-lived trapping of photoinduced charge; in our opinion these controversies have been resolved and are discussed here. Furthermore, various photovoltaic cell architectures utilizing QDs have recently been constructed and the photocurrent and photovoltage characterisitics have been studied. These photocurrent measurements provide a more direct measurement of MEG since the photogenerated carriers are counted directly via the current, and they are very consistent with the QYs of MEG reported using the proper spectroscopic techniques; thus, these new photocurrent measurements confirm the existence of enhanced exciton and carrier multiplication in QDs. The past work and prognosis for QD-based Next Generation PV cells based on MEG are discussed.

  19. Handheld deep ultraviolet emission device based on aluminum nitride quantum wells and graphene nanoneedle field emitters.

    PubMed

    Matsumoto, Takahiro; Iwayama, Sho; Saito, Takao; Kawakami, Yasuyuki; Kubo, Fumio; Amano, Hiroshi

    2012-10-22

    We report the successful fabrication of a compact deep ultraviolet emission device via a marriage of AlGaN quantum wells and graphene nanoneedle field electron emitters. The device demonstrated a 20-mW deep ultraviolet output power and an approximately 4% power efficiency. The performance of this device may lead toward the realization of an environmentally friendly, convenient and practical deep ultraviolet light source.

  20. Quantum Darwinism

    NASA Astrophysics Data System (ADS)

    Zurek, Wojciech Hubert

    2009-03-01

    Quantum Darwinism describes the proliferation, in the environment, of multiple records of selected states of a quantum system. It explains how the quantum fragility of a state of a single quantum system can lead to the classical robustness of states in their correlated multitude; shows how effective `wave-packet collapse' arises as a result of the proliferation throughout the environment of imprints of the state of the system; and provides a framework for the derivation of Born's rule, which relates the probabilities of detecting states to their amplitudes. Taken together, these three advances mark considerable progress towards settling the quantum measurement problem.