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Sample records for algan multiple quantum

  1. Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells

    SciTech Connect

    Li, Xiaohang E-mail: dupuis@gatech.edu; Xie, Hongen; Ponce, Fernando A.; Ryou, Jae-Hyun; Detchprohm, Theeradetch; Dupuis, Russell D. E-mail: dupuis@gatech.edu

    2015-12-14

    We demonstrated onset of deep-ultraviolet (DUV) surface stimulated emission (SE) from c-plane AlGaN multiple-quantum well (MQW) heterostructures grown on a sapphire substrate by optical pumping at room temperature. The onset of SE became observable at a pumping power density of 630 kW/cm{sup 2}. Spectral deconvolution revealed superposition of a linearly amplified spontaneous emission peak at λ ∼ 257.0 nm with a full width at half maximum (FWHM) of ∼12 nm and a superlinearly amplified SE peak at λ ∼ 260 nm with a narrow FWHM of less than 2 nm. In particular, the wavelength of ∼260 nm is the shortest wavelength of surface SE from III-nitride MQW heterostructures to date. Atomic force microscopy and scanning transmission electron microscopy measurements were employed to investigate the material and structural quality of the AlGaN heterostructures, showing smooth surface and sharp layer interfaces. This study offers promising results for AlGaN heterostructures grown on sapphire substrates for the development of DUV vertical cavity surface emitting lasers (VCSELs)

  2. Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes

    NASA Astrophysics Data System (ADS)

    Mehnke, Frank; Kuhn, Christian; Guttmann, Martin; Reich, Christoph; Kolbe, Tim; Kueller, Viola; Knauer, Arne; Lapeyrade, Mickael; Einfeldt, Sven; Rass, Jens; Wernicke, Tim; Weyers, Markus; Kneissl, Michael

    2014-08-01

    The design and Mg-doping profile of AlN/Al0.7Ga0.3N electron blocking heterostructures (EBH) for AlGaN multiple quantum well (MQW) light emitting diodes (LEDs) emitting below 250 nm was investigated. By inserting an AlN electron blocking layer (EBL) into the EBH, we were able to increase the quantum well emission power and significantly reduce long wavelength parasitic luminescence. Furthermore, electron leakage was suppressed by optimizing the thickness of the AlN EBL while still maintaining sufficient hole injection. Ultraviolet (UV)-C LEDs with very low parasitic luminescence (7% of total emission power) and external quantum efficiencies of 0.19% at 246 nm have been realized. This concept was applied to AlGaN MQW LEDs emitting between 235 nm and 263 nm with external quantum efficiencies ranging from 0.002% to 0.93%. After processing, we were able to demonstrate an UV-C LED emitting at 234 nm with 14.5 μW integrated optical output power and an external quantum efficiency of 0.012% at 18.2 A/cm2.

  3. Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes

    SciTech Connect

    Mehnke, Frank Kuhn, Christian; Guttmann, Martin; Reich, Christoph; Kolbe, Tim; Rass, Jens; Wernicke, Tim; Kueller, Viola; Knauer, Arne; Lapeyrade, Mickael; Einfeldt, Sven; Weyers, Markus; Kneissl, Michael

    2014-08-04

    The design and Mg-doping profile of AlN/Al{sub 0.7}Ga{sub 0.3}N electron blocking heterostructures (EBH) for AlGaN multiple quantum well (MQW) light emitting diodes (LEDs) emitting below 250 nm was investigated. By inserting an AlN electron blocking layer (EBL) into the EBH, we were able to increase the quantum well emission power and significantly reduce long wavelength parasitic luminescence. Furthermore, electron leakage was suppressed by optimizing the thickness of the AlN EBL while still maintaining sufficient hole injection. Ultraviolet (UV)-C LEDs with very low parasitic luminescence (7% of total emission power) and external quantum efficiencies of 0.19% at 246 nm have been realized. This concept was applied to AlGaN MQW LEDs emitting between 235 nm and 263 nm with external quantum efficiencies ranging from 0.002% to 0.93%. After processing, we were able to demonstrate an UV-C LED emitting at 234 nm with 14.5 μW integrated optical output power and an external quantum efficiency of 0.012% at 18.2 A/cm{sup 2}.

  4. Improved characteristics of ultraviolet AlGaN multiple-quantum-well laser diodes with step-graded quantum barriers close to waveguide layers

    NASA Astrophysics Data System (ADS)

    Cai, Xuefen; Li, Shuping; Kang, Junyong

    2016-09-01

    Ultraviolet AlGaN multiple-quantum-well laser diodes (LDs) with step-graded quantum barriers (QBs) instead of conventional first and last QBs close to waveguide layers are proposed. The characteristics of this type of laser diodes are numerically investigated by using the software PICS3D and it is found that the performances of these LDs are greatly improved. The results indicates that the structure with step-graded QBs exhibits higher output light power, slope efficiency and emission intensity, as well as lower series resistance and threshold current density under the identical condition, compared with conventional LD structure.

  5. On the increased efficiency in InGaN-based multiple quantum wells emitting at 530-590 nm with AlGaN interlayers

    NASA Astrophysics Data System (ADS)

    Koleske, D. D.; Fischer, A. J.; Bryant, B. N.; Kotula, P. G.; Wierer, J. J.

    2015-04-01

    InGaN/AlGaN/GaN-based multiple quantum wells (MQWs) with AlGaN interlayers (ILs) are investigated, specifically to examine the fundamental mechanisms behind their increased radiative efficiency at wavelengths of 530-590 nm. The AlzGa1-zN (z~0.38) IL is ~1-2 nm thick, and is grown after and at the same growth temperature as the ~3 nm thick InGaN quantum well (QW). This is followed by an increase in temperature for the growth of a ~10 nm thick GaN barrier layer. The insertion of the AlGaN IL within the MQW provides various benefits. First, the AlGaN IL allows for growth of the InxGa1-xN QW well below typical growth temperatures to achieve higher x (up to~0.25). Second, annealing the IL capped QW prior to the GaN barrier growth improves the AlGaN IL smoothness as determined by atomic force microscopy, improves the InGaN/AlGaN/GaN interface quality as determined from scanning transmission electron microscope images and x-ray diffraction, and increases the radiative efficiency by reducing non-radiative defects as determined by time-resolved photoluminescence measurements. Finally, the AlGaN IL increases the spontaneous and piezoelectric polarization induced electric fields acting on the InGaN QW, providing an additional red-shift to the emission wavelength as determined by Schrodinger-Poisson modeling and fitting to the experimental data. The relative impact of increased indium concentration and polarization fields on the radiative efficiency of MQWs with AlGaN ILs is explored along with implications to conventional longer wavelength emitters.

  6. High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

    SciTech Connect

    Bryan, Zachary Bryan, Isaac; Sitar, Zlatko; Collazo, Ramón; Xie, Jinqiao; Mita, Seiji

    2015-04-06

    The internal quantum efficiency (IQE) of Al{sub 0.55}Ga{sub 0.45}N/AlN and Al{sub 0.55}Ga{sub 0.45}N/Al{sub 0.85}Ga{sub 0.15}N UVC MQW structures was analyzed. The use of bulk AlN substrates enabled us to undoubtedly distinguish the effect of growth conditions, such as V/III ratio, on the optical quality of AlGaN based MQWs from the influence of dislocations. At a high V/III ratio, a record high IQE of ∼80% at a carrier density of 10{sup 18 }cm{sup −3} was achieved at ∼258 nm. The high IQE was correlated with the decrease of the non-radiative coefficient A and a reduction of midgap defect luminescence, all suggesting that, in addition to dislocations, point defects are another major factor that strongly influences optical quality of AlGaN MQW structures.

  7. Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate

    SciTech Connect

    Li, Xiao-Hang E-mail: dupuis@gatech.edu; Kao, Tsung-Ting; Satter, Md. Mahbub; Shen, Shyh-Chiang; Yoder, P. Douglas; Detchprohm, Theeradetch; Dupuis, Russell D. E-mail: dupuis@gatech.edu; Wei, Yong O.; Wang, Shuo; Xie, Hongen; Fischer, Alec M.; Ponce, Fernando A.

    2015-01-26

    We demonstrate transverse-magnetic (TM) dominant deep-ultraviolet (DUV) stimulated emission from photo-pumped AlGaN multiple-quantum-well lasers grown pseudomorphically on an AlN/sapphire template by means of photoluminescence at room temperature. The TM-dominant stimulated emission was observed at wavelengths of 239, 242, and 243 nm with low thresholds of 280, 250, and 290 kW/cm{sup 2}, respectively. In particular, the lasing wavelength of 239 nm is shorter compared to other reports for AlGaN lasers grown on foreign substrates including sapphire and SiC. The peak wavelength difference between the transverse-electric (TE)-polarized emission and TM-polarized emission was approximately zero for the lasers in this study, indicating the crossover of crystal-field split-off hole and heavy-hole valence bands. The rapid variation of polarization between TE- and TM-dominance versus the change in lasing wavelength from 243 to 249 nm can be attributed to a dramatic change in the TE-to-TM gain coefficient ratio for the sapphire-based DUV lasers in the vicinity of TE-TM switch.

  8. Polarization engineering of back-illuminated separate absorption and multiplication AlGaN avalanche photodiodes

    NASA Astrophysics Data System (ADS)

    Yang, Guofeng; Wang, Fuxue

    2016-08-01

    The back-illuminated separate absorption and multiplication AlGaN avalanche photodiodes (APDs) with a p-type graded AlGaN layer have been designed to investigate the polarization engineering on the performance of the devices. The calculated results show that the APD with p-graded AlGaN layer exhibits lower avalanche breakdown voltage and increased maximum multiplication gain compared to the structure with conventional p-type AlGaN layer. The improved performance of the designed APD is numerically explained by the polarization-assisted enhancement of the ionization electric field in the multiplication region and polarization doping effect caused by the p-type graded layer.

  9. Enhancement of optical polarization degree of AlGaN quantum wells by using staggered structure.

    PubMed

    Wang, Weiying; Lu, Huimin; Fu, Lei; He, Chenguang; Wang, Mingxing; Tang, Ning; Xu, Fujun; Yu, Tongjun; Ge, Weikun; Shen, Bo

    2016-08-01

    Staggered AlGaN quantum wells (QWs) are designed to enhance the transverse-electric (TE) polarized optical emission in deep ultraviolet (DUV) light- emitting diodes (LED). The optical polarization properties of the conventional and staggered AlGaN QWs are investigated by a theoretical model based on the k·p method as well as polarized photoluminescence (PL) measurements. Based on an analysis of the valence subbands and momentum matrix elements, it is found that AlGaN QWs with step-function-like Al content in QWs offers much stronger TE polarized emission in comparison to that from conventional AlGaN QWs. Experimental results show that the degree of the PL polarization at room temperature can be enhanced from 20.8% of conventional AlGaN QWs to 40.2% of staggered AlGaN QWs grown by MOCVD, which is in good agreement with the theoretical simulation. It suggests that polarization band engineering via staggered AlGaN QWs can be well applied in high efficiency AlGaN-based DUV LEDs. PMID:27505782

  10. Over 1 W record-peak-power operation of a 338 nm AlGaN multiple-quantum-well laser diode on a GaN substrate

    NASA Astrophysics Data System (ADS)

    Taketomi, Hiroyuki; Aoki, Yuta; Takagi, Yasufumi; Sugiyama, Atsushi; Kuwabara, Masakazu; Yoshida, Harumasa

    2016-05-01

    We have demonstrated the high-peak-power operation of an AlGaN-based ultraviolet laser diode (UV-LD) with a lasing wavelength of 338.6 nm. The UV-LD structure was fabricated on a bulk GaN(0001) substrate. The broad-area and vertical conductive structure of the UV-LD, whose ridge width and cavity length were 50 and 600 µm, respectively, was employed. The threshold current density and differential external quantum efficiency were estimated to be 38.9 kA/cm2 and 8.5%, respectively. The characteristic temperature of threshold current was estimated to be 119 K, and the temperature dependence of lasing wavelength was obtained to be 0.033 nm K‑1. A peak power of over 1 W has been achieved in 338.6 nm under pulsed operation at room temperature, which is the highest peak power ever obtained for AlGaN-based UV-LDs.

  11. Quantum chemical mechanism in parasitic reaction of AlGaN alloys formation

    NASA Astrophysics Data System (ADS)

    Makino, Osamu; Nakamura, Koichi; Tachibana, Akitomo; Tokunaga, Hiroki; Akutsu, Nakao; Matsumoto, Koh

    2000-06-01

    The mechanism of parasitic reactions among trimethylaluminum (TMA), trimethylgallium (TMG), and NH 3 in atmospheric pressure (AP) MOVPE for growth of AlGaN is theoretically studied using the quantum chemical method. The calculations show that metal-nitrogen chain growth reaction easily proceeds through the successive reactions of 'complex formation with NH 3' and 'CH 4 elimination by the bimolecular mechanism'. Additionally, a parasitic reaction in APMOVPE using other raw material is also investigated. The calculated result shows that small change of raw material raises activation energy of parasitic reaction, and, thus, the parasitic reaction is suppressed. This result suggests a way to improve APMOVPE by a suitable choice of substituent.

  12. Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes

    SciTech Connect

    Reich, Christoph Guttmann, Martin; Wernicke, Tim; Mehnke, Frank; Kuhn, Christian; Feneberg, Martin; Goldhahn, Rüdiger; Rass, Jens; Kneissl, Michael; Lapeyrade, Mickael; Einfeldt, Sven; Knauer, Arne; Kueller, Viola; Weyers, Markus

    2015-10-05

    The optical polarization of emission from ultraviolet (UV) light emitting diodes (LEDs) based on (0001)-oriented Al{sub x}Ga{sub 1−x}N multiple quantum wells (MQWs) has been studied by simulations and electroluminescence measurements. With increasing aluminum mole fraction in the quantum well x, the in-plane intensity of transverse-electric (TE) polarized light decreases relative to that of the transverse-magnetic polarized light, attributed to a reordering of the valence bands in Al{sub x}Ga{sub 1−x}N. Using k ⋅ p theoretical model calculations, the AlGaN MQW active region design has been optimized, yielding increased TE polarization and thus higher extraction efficiency for bottom-emitting LEDs in the deep UV spectral range. Using (i) narrow quantum wells, (ii) barriers with high aluminum mole fractions, and (iii) compressive growth on patterned aluminum nitride sapphire templates, strongly TE-polarized emission was observed at wavelengths as short as 239 nm.

  13. Deformation potentials in AlGaN and InGaN alloys and their impact on optical polarization properties of nitride quantum wells

    NASA Astrophysics Data System (ADS)

    Łepkowski, S. P.; Gorczyca, I.; Stefańska-Skrobas, K.; Christensen, N. E.; Svane, A.

    2013-08-01

    The deformation potentials acz-D1, act-D2, D3, D4, and D5 are determined for random AlGaN and InGaN alloys using electronic band structure calculations based on the density functional theory. A sublinear composition dependence is obtained for acz-D1 and D3 in AlGaN, and D3 in InGaN, whereas superlinear behavior on composition is found for act-D2, D4, and D5 in AlGaN, and act-D2 and D5 in InGaN. The optical polarization properties of nitride quantum wells are very well described by the k·p method when the obtained deformation potentials are included. In m-plane AlGaN/AlN and InGaN/GaN quantum wells, the difference between the interband transition energies for light polarized parallel and orthogonal to the crystalline c axis compares more favorably to experimental data, than when deformation potentials previously reported in literature are used.

  14. Multiple quantum coherence spectroscopy.

    PubMed

    Mathew, Nathan A; Yurs, Lena A; Block, Stephen B; Pakoulev, Andrei V; Kornau, Kathryn M; Wright, John C

    2009-08-20

    Multiple quantum coherences provide a powerful approach for studies of complex systems because increasing the number of quantum states in a quantum mechanical superposition state increases the selectivity of a spectroscopic measurement. We show that frequency domain multiple quantum coherence multidimensional spectroscopy can create these superposition states using different frequency excitation pulses. The superposition state is created using two excitation frequencies to excite the symmetric and asymmetric stretch modes in a rhodium dicarbonyl chelate and the dynamic Stark effect to climb the vibrational ladders involving different overtone and combination band states. A monochromator resolves the free induction decay of different coherences comprising the superposition state. The three spectral dimensions provide the selectivity required to observe 19 different spectral features associated with fully coherent nonlinear processes involving up to 11 interactions with the excitation fields. The different features act as spectroscopic probes of the diagonal and off-diagonal parts of the molecular potential energy hypersurface. This approach can be considered as a coherent pump-probe spectroscopy where the pump is a series of excitation pulses that prepares a multiple quantum coherence and the probe is another series of pulses that creates the output coherence. PMID:19507812

  15. Measurement and simulation of top- and bottom-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors with high external quantum efficiencies

    SciTech Connect

    Brendel, Moritz Helbling, Markus; Knigge, Andrea; Brunner, Frank; Weyers, Markus

    2015-12-28

    A comprehensive study on top- and bottom-illuminated Al{sub 0.5}Ga{sub 0.5}N/AlN metal-semiconductor-metal (MSM) photodetectors having different AlGaN absorber layer thickness is presented. The measured external quantum efficiency (EQE) shows pronounced threshold and saturation behavior as a function of applied bias voltage up to 50 V reaching about 50% for 0.1 μm and 67% for 0.5 μm thick absorber layers under bottom illumination. All experimental findings are in very good accordance with two-dimensional drift-diffusion modeling results. By taking into account macroscopic polarization effects in the hexagonal metal-polar +c-plane AlGaN/AlN heterostructures, new insights into the general device functionality of AlGaN-based MSM photodetectors are obtained. The observed threshold/saturation behavior is caused by a bias-dependent extraction of photoexcited holes from the Al{sub 0.5}Ga{sub 0.5}N/AlN interface. While present under bottom illumination for any AlGaN layer thickness, under top illumination this mechanism influences the EQE-bias characteristics only for thin layers.

  16. Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells

    PubMed Central

    Gao, Na; Huang, Kai; Li, Jinchai; Li, Shuping; Yang, Xu; Kang, Junyong

    2012-01-01

    We report the development of complete structural AlGaN-based deep-ultraviolet light-emitting diodes with an aluminum thin layer for increasing light extraction efficiency. A 217% enhancement in peak photoluminescence intensity at 294 nm is observed. Cathodoluminescence measurement demonstrates that the internal quantum efficiency of the deep-UV LEDs coated with Al layer is not enhanced. The emission enhancement of deep-UV LEDs is attributed to the higher LEE by the surface plasmon-transverse magnetic wave coupling. When the proportion of the TM wave to the Al layer increases with the Al content in the AlxGa1-xN multiple quantum wells, i.e., the band edge emission energy, the enhancement ratio of the Al-coated deep-UV LEDs increases. PMID:23150780

  17. Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells

    SciTech Connect

    Chen, G.; Rong, X.; Xu, F. J.; Tang, N.; Wang, X. Q. Shen, B.; Fu, K.; Zhang, B. S.; Hashimoto, H.; Yoshikawa, A.; Ge, W. K.

    2014-04-28

    Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4 μm, which shows potential applications on near infrared detection.

  18. Si concentration dependence of structural inhomogeneities in Si-doped Al{sub x}Ga{sub 1−x}N/Al{sub y}Ga{sub 1−y}N multiple quantum well structures (x = 0.6) and its relationship with internal quantum efficiency

    SciTech Connect

    Kurai, Satoshi Anai, Koji; Yamada, Yoichi; Miyake, Hideto; Hiramatsu, Kazumasa

    2014-12-21

    We investigated the distribution of luminescence in Si-doped Al{sub x}Ga{sub 1−x}N/Al{sub y}Ga{sub 1−y}N multiple quantum well (MQW) structures (x = 0.6) with different Si concentrations by cathodoluminescence (CL) mapping combined with scanning electron microscopy. The effects of surface morphology, dark spot density, and full width at half-maximum of spot CL spectra on internal quantum efficiency (IQE) were determined. A flat surface morphology and uniform CL map were observed for Si-doped AlGaN MQWs, in contrast to undoped AlGaN MQW and Si-doped AlGaN with relatively low Al content. The dark spot density in the Si-doped AlGaN MQWs increased exponentially as the Si concentration increased and did not explain the Si concentration dependence of IQE. In contrast, there was a clear correlation between the dark spot density and IQE of the AlGaN MQWs at a constant Si concentration. The emission energy distribution arising from the inhomogeneity of the relative Al content and the well layer thickness was estimated by monochromatic CL measurements, although there was almost no difference in the distribution for different Si concentrations. Therefore, the previously reported dependence of the defect complexes on Si concentration is reflected in the IQE of Si-doped AlGaN MQWs. Defect complexes composed of cation vacancies and impurities rather than dislocations and interfacial quality are the major contributor to the IQE of the Si-doped AlGaN MQWs with different Si concentrations.

  19. Pressure Study of Photoluminescence in GaN/InGaN/ AlGaN Quantum Wells

    NASA Astrophysics Data System (ADS)

    Perlin, Piotr; Iota, V.; Weinstein, B. A.; Wisniewski, P.; Osinski, M.; Eliseev, P. G.

    1997-03-01

    We have studied the photoluminescence (PL) from two commercial high brightness single quantum well light emitting diodes (Nichia Chem. Industs.) with In_xGa_1-x N (x=0.45 and 0.2) as the active layers under hydrostatic pressures up to 7 GPa. These diodes are the best existing light emitters at short wavelengths, having the emission wavelengths of 430 nm and 530 nm depending on the content of indium in the 30 Åthick quantum wells. Although these devices show a remarkable quality and efficiency (luminosity as high as 12 cd), the mechanism of recombination remains obscure. We discovered that the pressure coefficient for each of the observed PL peaks is dramatically (2-3 times) lower than that of the energy gap of its InGaN active layer. These observations, in conjunction with the fact that the observed emission occurs below the energy gap of the quantum well material, and also considering the anomalous temperature behavior of the emission (peak energy increasing with temperature) suggest the involvement of localized states and exclude a simple band-to-band recombination picture. These localized states may be tentatively attributed to the presence of band tails in the gap which stem from composition fluctuations in the InGaN alloy. (figures)

  20. An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission

    PubMed Central

    Lee, Jong Won; Kim, Dong Yeong; Park, Jun Hyuk; Schubert, E. Fred; Kim, Jungsub; Lee, Jinsub; Kim, Yong-Il; Park, Youngsoo; Kim, Jong Kyu

    2016-01-01

    While there is an urgent need for semiconductor-based efficient deep ultraviolet (DUV) sources, the efficiency of AlGaN DUV light-emitting diodes (LEDs) remains very low because the extraction of DUV photons is significantly limited by intrinsic material properties of AlGaN. Here, we present an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes for maximizing the power conversion efficiency. PMID:26935402

  1. An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission

    NASA Astrophysics Data System (ADS)

    Lee, Jong Won; Kim, Dong Yeong; Park, Jun Hyuk; Schubert, E. Fred; Kim, Jungsub; Lee, Jinsub; Kim, Yong-Il; Park, Youngsoo; Kim, Jong Kyu

    2016-03-01

    While there is an urgent need for semiconductor-based efficient deep ultraviolet (DUV) sources, the efficiency of AlGaN DUV light-emitting diodes (LEDs) remains very low because the extraction of DUV photons is significantly limited by intrinsic material properties of AlGaN. Here, we present an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes for maximizing the power conversion efficiency.

  2. An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission.

    PubMed

    Lee, Jong Won; Kim, Dong Yeong; Park, Jun Hyuk; Schubert, E Fred; Kim, Jungsub; Lee, Jinsub; Kim, Yong-Il; Park, Youngsoo; Kim, Jong Kyu

    2016-01-01

    While there is an urgent need for semiconductor-based efficient deep ultraviolet (DUV) sources, the efficiency of AlGaN DUV light-emitting diodes (LEDs) remains very low because the extraction of DUV photons is significantly limited by intrinsic material properties of AlGaN. Here, we present an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes for maximizing the power conversion efficiency. PMID:26935402

  3. Quantum internet using code division multiple access.

    PubMed

    Zhang, Jing; Liu, Yu-xi; Ozdemir, Sahin Kaya; Wu, Re-Bing; Gao, Feifei; Wang, Xiang-Bin; Yang, Lan; Nori, Franco

    2013-01-01

    A crucial open problem inS large-scale quantum networks is how to efficiently transmit quantum data among many pairs of users via a common data-transmission medium. We propose a solution by developing a quantum code division multiple access (q-CDMA) approach in which quantum information is chaotically encoded to spread its spectral content, and then decoded via chaos synchronization to separate different sender-receiver pairs. In comparison to other existing approaches, such as frequency division multiple access (FDMA), the proposed q-CDMA can greatly increase the information rates per channel used, especially for very noisy quantum channels. PMID:23860488

  4. Quantum internet using code division multiple access

    NASA Astrophysics Data System (ADS)

    Zhang, Jing; Liu, Yu-Xi; Özdemir, Şahin Kaya; Wu, Re-Bing; Gao, Feifei; Wang, Xiang-Bin; Yang, Lan; Nori, Franco

    2013-07-01

    A crucial open problem inS large-scale quantum networks is how to efficiently transmit quantum data among many pairs of users via a common data-transmission medium. We propose a solution by developing a quantum code division multiple access (q-CDMA) approach in which quantum information is chaotically encoded to spread its spectral content, and then decoded via chaos synchronization to separate different sender-receiver pairs. In comparison to other existing approaches, such as frequency division multiple access (FDMA), the proposed q-CDMA can greatly increase the information rates per channel used, especially for very noisy quantum channels.

  5. Multiple Multi-Qubit Quantum States Sharing

    NASA Astrophysics Data System (ADS)

    Qin, Hua-Wang; Dai, Yue-Wei

    2016-04-01

    A multiple multi-qubit quantum states sharing scheme is proposed, in which the dealer can share multiple multi-qubit quantum states among the participants through only one distribution and one recovery. The dealer encodes the secret quantum states into a special entangled state, and then distributes the particles of the entangled state to the participants. The participants perform the single-particle measurements on their particles, and can cooperate to recover the multiple multi-qubit quantum states. Compared to the existing schemes, our scheme is more efficient and more flexible in practice.

  6. Multiple-Access Quantum-Classical Networks

    NASA Astrophysics Data System (ADS)

    Razavi, Mohsen

    2011-10-01

    A multi-user network that supports both classical and quantum communication is proposed. By relying on optical code-division multiple access techniques, this system offers simultaneous key exchange between multiple pairs of network users. A lower bound on the secure key generation rate will be derived for decoy-state quantum key distribution protocols.

  7. An electrically injected AlGaN nanowire laser operating in the ultraviolet-C band

    SciTech Connect

    Zhao, S.; Liu, X.; Kang, J.; Mi, Z.; Woo, S. Y.; Botton, G. A.

    2015-07-27

    We have investigated the molecular beam epitaxial growth and characterization of nearly defect-free AlGaN nanowire heterostructures grown directly on Si substrate. By exploiting the Anderson localization of light, we have demonstrated electrically injected AlGaN nanowire lasers that can operate at 262.1 nm. The threshold current density is 200 A/cm{sup 2} at 77 K. The relatively low threshold current is attributed to the high Q-factor of the random cavity and the three-dimensional quantum confinement offered by the atomic-scale composition modulation in self-organized AlGaN nanowires.

  8. Multiple-quantum NMR in solids

    NASA Astrophysics Data System (ADS)

    Yen, Yu-Sze; Pines, A.

    1983-03-01

    Multiple-quantum NMR has typically been observed in small groups of spins in isolated molecules. Due to the profusion of spin transitions in a solid, individual lines are unresolved. Excitation of high quantum transitions by normal schemes is thus difficult. To ensure that overlapping lines add constructively and to enhance sensitivity, time-reversal pulse sequences are used to generate all lines in phase. Up to 22-quantum 1H absorption in solid adamantane is observed.

  9. Multiple-quantum NMR in solids

    SciTech Connect

    Yen, Y.; Pines, A.

    1983-03-15

    Multiple-quantum NMR has typically been observed in small groups of spins in isolated molecules. Due to the profusion of spin transitions in a solid, individual lines are unresolved. Excitation of high quantum transitions by normal schemes is thus difficult. To ensure that overlapping lines add constructively and to enhance sensitivity, time-reversal pulse sequences are used to generate all lines in phase. Up to 22-quantum /sup 1/H absorption in solid adamantane is observed.

  10. Formation and characteristics of AlGaN-based three-dimensional hexagonal nanopyramid semi-polar multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Tian, Yingdong; Yan, Jianchang; Zhang, Yun; Zhang, Yonghui; Chen, Xiang; Guo, Yanan; Wang, Junxi; Li, Jinmin

    2016-05-01

    We demonstrated for the first time the formation and study of semi-polar AlGaN multiple-quantum-wells (MQWs) grown on highly regular hexagonal AlN nanopyramids. The AlN nanopyramids were obtained by a metal-organic chemical vapor phase deposition regrowth method on a well-ordered AlN nanorod array prepared by a top-down etching process. The growth mechanism of the AlN nanopyramids was ascribed to the slow growth of the (101&cmb.macr;1) semi-polar plane, which resulted from hydrogen passivation. Beneath the semi-polar facets, air voids were formed. This was attributed to the insufficient delivery of gas reactants to the bottom of the nanorods during the growth process. The polarization effect in semi-polar AlGaN MQWs was numerically calculated. The results showed that the internal electric field (IEF) in the semi-polar MQWs was remarkably reduced by 80% in comparison with c-plane MQWs. Power dependent photoluminescence indicated that the semi-polar AlGaN MQWs had negligible wavelength shifts that resulted from the reduced IEF, which was in accordance with theoretical predictions. In addition, epitaxial strain was greatly relieved in the AlN regrowth layer, which was revealed from the peak shift of the E2(high) phonon using micro-Raman spectroscopy. The advantages of AlGaN-based hexagonal nanopyramid semi-polar three dimensional nanostructures would lead to a large improvement of output power in UV-LEDs.

  11. Formation and characteristics of AlGaN-based three-dimensional hexagonal nanopyramid semi-polar multiple quantum wells.

    PubMed

    Tian, Yingdong; Yan, Jianchang; Zhang, Yun; Zhang, Yonghui; Chen, Xiang; Guo, Yanan; Wang, Junxi; Li, Jinmin

    2016-06-01

    We demonstrated for the first time the formation and study of semi-polar AlGaN multiple-quantum-wells (MQWs) grown on highly regular hexagonal AlN nanopyramids. The AlN nanopyramids were obtained by a metal-organic chemical vapor phase deposition regrowth method on a well-ordered AlN nanorod array prepared by a top-down etching process. The growth mechanism of the AlN nanopyramids was ascribed to the slow growth of the (101[combining macron]1) semi-polar plane, which resulted from hydrogen passivation. Beneath the semi-polar facets, air voids were formed. This was attributed to the insufficient delivery of gas reactants to the bottom of the nanorods during the growth process. The polarization effect in semi-polar AlGaN MQWs was numerically calculated. The results showed that the internal electric field (IEF) in the semi-polar MQWs was remarkably reduced by 80% in comparison with c-plane MQWs. Power dependent photoluminescence indicated that the semi-polar AlGaN MQWs had negligible wavelength shifts that resulted from the reduced IEF, which was in accordance with theoretical predictions. In addition, epitaxial strain was greatly relieved in the AlN regrowth layer, which was revealed from the peak shift of the E2(high) phonon using micro-Raman spectroscopy. The advantages of AlGaN-based hexagonal nanopyramid semi-polar three dimensional nanostructures would lead to a large improvement of output power in UV-LEDs. PMID:27174102

  12. Angular distribution of polarized light and its effect on light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes.

    PubMed

    Chen, Xinjuan; Ji, Cheng; Xiang, Yong; Kang, Xiangning; Shen, Bo; Yu, Tongjun

    2016-05-16

    Angular distribution of polarized light and its effect on light extraction efficiency (LEE) in AlGaN deep-ultraviolet (DUV) light-emitting diodes (LEDs) are investigated in this paper. A united picture is presented to describe polarized light's emission and propagation processes. It is found that the electron-hole recombinations in AlGaN multiple quantum wells produce three kinds of angularly distributed polarized emissions and propagation process can change their intensity distributions. By investigation the change of angular distributions in 277nm and 215nm LEDs, this work reveals that LEE can be significantly enhanced by modulating the angular distributions of polarized light of DUV LEDs. PMID:27409966

  13. Time-domain multiple-quantum NMR

    SciTech Connect

    Weitekamp, D.P.

    1982-11-01

    The development of time-domain multiple-quantum nuclear magnetic resonance is reviewed through mid 1982 and some prospects for future development are indicated. Particular attention is given to the problem of obtaining resolved, interpretable, many-quantum spectra for anisotropic magnetically isolated systems of coupled spins. New results are presented on a number of topics including the optimization of multiple-quantum-line intensities, analysis of noise in two-dimensional spectroscopy, and the use of order-selective excitation for cross polarization between nuclear-spin species.

  14. Quantum hyperparallel algorithm for matrix multiplication

    NASA Astrophysics Data System (ADS)

    Zhang, Xin-Ding; Zhang, Xiao-Ming; Xue, Zheng-Yuan

    2016-04-01

    Hyperentangled states, entangled states with more than one degree of freedom, are considered as promising resource in quantum computation. Here we present a hyperparallel quantum algorithm for matrix multiplication with time complexity O(N2), which is better than the best known classical algorithm. In our scheme, an N dimensional vector is mapped to the state of a single source, which is separated to N paths. With the assistance of hyperentangled states, the inner product of two vectors can be calculated with a time complexity independent of dimension N. Our algorithm shows that hyperparallel quantum computation may provide a useful tool in quantum machine learning and “big data” analysis.

  15. Quantum hyperparallel algorithm for matrix multiplication.

    PubMed

    Zhang, Xin-Ding; Zhang, Xiao-Ming; Xue, Zheng-Yuan

    2016-01-01

    Hyperentangled states, entangled states with more than one degree of freedom, are considered as promising resource in quantum computation. Here we present a hyperparallel quantum algorithm for matrix multiplication with time complexity O(N(2)), which is better than the best known classical algorithm. In our scheme, an N dimensional vector is mapped to the state of a single source, which is separated to N paths. With the assistance of hyperentangled states, the inner product of two vectors can be calculated with a time complexity independent of dimension N. Our algorithm shows that hyperparallel quantum computation may provide a useful tool in quantum machine learning and "big data" analysis. PMID:27125586

  16. Determination of gain in AlGaN cladding free nitride laser diodes

    SciTech Connect

    Muziol, G.; Turski, H.; Wolny, P.

    2013-08-05

    The optical gain spectra of InGaN-based multiple-quantum-well (MQW) laser diodes (LDs) grown by plasma-assisted molecular beam epitaxy are compared for different emission wavelengths. Two AlGaN cladding free LDs with similar epitaxial structures but with different In compositions in MQW were grown to study the dependence of material gain on lasing wavelength. As the emission wavelength increased from 432 to 458 nm, the differential modal gain decreased from 5.7 to 4.7 cm/kA, and the optical losses increased from 40 to 46 cm{sup −1} resulting in an increase in threshold current density. This dependence is attributed to lower optical mode confinement of LD emitting at longer wavelength. We found a strong decrease of confinement factor with increasing wavelength.

  17. Quantum hyperparallel algorithm for matrix multiplication

    PubMed Central

    Zhang, Xin-Ding; Zhang, Xiao-Ming; Xue, Zheng-Yuan

    2016-01-01

    Hyperentangled states, entangled states with more than one degree of freedom, are considered as promising resource in quantum computation. Here we present a hyperparallel quantum algorithm for matrix multiplication with time complexity O(N2), which is better than the best known classical algorithm. In our scheme, an N dimensional vector is mapped to the state of a single source, which is separated to N paths. With the assistance of hyperentangled states, the inner product of two vectors can be calculated with a time complexity independent of dimension N. Our algorithm shows that hyperparallel quantum computation may provide a useful tool in quantum machine learning and “big data” analysis. PMID:27125586

  18. Selectivity in multiple quantum nuclear magnetic resonance

    SciTech Connect

    Warren, W.S.

    1980-11-01

    The observation of multiple-quantum nuclear magnetic resonance transitions in isotropic or anisotropic liquids is shown to give readily interpretable information on molecular configurations, rates of motional processes, and intramolecular interactions. However, the observed intensity of high multiple-quantum transitions falls off dramatically as the number of coupled spins increases. The theory of multiple-quantum NMR is developed through the density matrix formalism, and exact intensities are derived for several cases (isotropic first-order systems and anisotropic systems with high symmetry) to shown that this intensity decrease is expected if standard multiple-quantum pulse sequences are used. New pulse sequences are developed which excite coherences and produce population inversions only between selected states, even though other transitions are simultaneously resonant. One type of selective excitation presented only allows molecules to absorb and emit photons in groups of n. Coherent averaging theory is extended to describe these selective sequences, and to design sequences which are selective to arbitrarily high order in the Magnus expansion. This theory and computer calculations both show that extremely good selectivity and large signal enhancements are possible.

  19. Multiple functional UV devices based on III-Nitride quantum wells for biological warfare agent detection

    NASA Astrophysics Data System (ADS)

    Wang, Qin; Savage, Susan; Persson, Sirpa; Noharet, Bertrand; Junique, Stéphane; Andersson, Jan Y.; Liuolia, Vytautas; Marcinkevicius, Saulius

    2009-02-01

    We have demonstrated surface normal detecting/filtering/emitting multiple functional ultraviolet (UV) optoelectronic devices based on InGaN/GaN, InGaN/AlGaN and AlxGa1-xN/AlyGa1-yN multiple quantum well (MQW) structures with operation wavelengths ranging from 270 nm to 450 nm. Utilizing MQW structure as device active layer offers a flexibility to tune its long cut-off wavelength in a wide UV range from solar-blind to visible by adjusting the well width, well composition and barrier height. Similarly, its short cut-off wavelength can be adjusted by using a GaN or AlGaN block layer on a sapphire substrate when the device is illuminated from its backside, which further provides an optical filtering effect. When a current injects into the device under forward bias the device acts as an UV light emitter, whereas the device performs as a typical photodetector under reverse biases. With applying an alternating external bias the device might be used as electroabsorption modulator due to quantum confined Stark effect. In present work fabricated devices have been characterized by transmission/absorption spectra, photoresponsivity, electroluminescence, and photoluminescence measurements under various forward and reverse biases. The piezoelectric effect, alloy broadening and Stokes shift between the emission and absorption spectra in different InGaN- and AlGaN-based QW structures have been investigated and compared. Possibilities of monolithic or hybrid integration using such multiple functional devices for biological warfare agents sensing application have also be discussed.

  20. Spin-orbit interaction in multiple quantum wells

    SciTech Connect

    Hao, Ya-Fei

    2015-01-07

    In this paper, we investigate how the structure of multiple quantum wells affects spin-orbit interactions. To increase the interface-related Rashba spin splitting and the strength of the interface-related Rashba spin-orbit interaction, we designed three kinds of multiple quantum wells. We demonstrate that the structure of the multiple quantum wells strongly affected the interface-related Rashba spin-orbit interaction, increasing the interface-related Rashba spin splitting to up to 26% larger in multiple quantum wells than in a stepped quantum well. We also show that the cubic Dresselhaus spin-orbit interaction similarly influenced the spin relaxation time of multiple quantum wells and that of a stepped quantum well. The increase in the interface-related Rashba spin splitting originates from the relationship between interface-related Rashba spin splitting and electron probability density. Our results suggest that multiple quantum wells can be good candidates for spintronic devices.

  1. Influences of stress on the properties of GaN/InGaN multiple quantum well LEDs grown on Si (111) substrates

    NASA Astrophysics Data System (ADS)

    Liu, Ming-Gang; Yang, Yi-Bin; Xiang, Peng; Chen, Wei-Jie; Han, Xiao-Biao; Lin, Xiu-Qi; Lin, Jia-Li; Luo, Hui; Liao, Qiang; Zang, Wen-Jie; Wu, Zhi-Sheng; Liu, Yang; Zhang, Bai-Jun

    2015-06-01

    The influences of stress on the properties of InGaN/GaN multiple quantum wells (MQWs) grown on silicon substrate were investigated. The different stresses were induced by growing InGaN and AlGaN insertion layers (IL) respectively before the growth of MQWs in metal-organic chemical vapor deposition (MOCVD) system. High resolution x-ray diffraction (HRXRD) and photoluminescence (PL) measurements demonstrated that the InGaN IL introduced an additional tensile stress in n-GaN, which released the strain in MQWs. It is helpful to increase the indium incorporation in MQWs. In comparison with MQWs without the IL, the wavelength shows a red-shift. AlGaN IL introduced a compressive stress to compensate the tensile stress, which reduces the indium composition in MQWs. PL measurement shows a blue-shift of wavelength. The two kinds of ILs were adopted to InGaN/GaN MQWs LED structures. The same wavelength shifts were also observed in the electroluminescence (EL) measurements of the LEDs. Improved indium homogeneity with InGaN IL, and phase separation with AlGaN IL were observed in the light images of the LEDs. Project supported by the National Natural Science Foundation of China (Grant Nos. 61274039 and 51177175), the National Basic Research Program of China (Grant Nos. 2010CB923201 and 2011CB301903), the Ph. D. Program Foundation of the Ministry of Education of China (Grant No. 20110171110021), the International Science and Technology Collaboration Program of China (Grant No. 2012DFG52260), the National High Technology Research and Development Program of China (Grant No. 2014AA032606), the International Science and Technology Collaboration Program of Guangdong Province, China (Grant No. 2013B051000041), and the Opened Fund of the State Key Laboratory on Integrated Optoelectronics (Grant No. IOSKL2014KF17).

  2. Wafer-scale crack-free AlGaN on GaN through two-step selective-area growth for optically pumped stimulated emission

    NASA Astrophysics Data System (ADS)

    Ko, Young-Ho; Bae, Sung-Bum; Kim, Sung-Bock; Kim, Dong Churl; Leem, Young Ahn; Cho, Yong-Hoon; Nam, Eun-Soo

    2016-07-01

    Crack-free AlGaN template has been successfully grown over entire 2-in. wafer by using 2-step selective-area growth (SAG). The GaN truncated structure was obtained by vertical growth mode with low growth temperature. AlGaN of second step was grown under lateral growth mode. Low pressure enhanced the relative ratio of lateral to vertical growth rate as well as absolute overall growth rate. High V/III ratio was favorable for lateral growth mode. Crack-free planar AlGaN was obtained under low pressure of 30 Torr and high V/III ratio of 4400. The AlGaN was crack-free over entire 2-in. wafer and had quite uniform Al-mole fraction. The dislocation density of the AlGaN with 20% Al-composition was as low as ~7.6×108 /cm2, measured by cathodoluminescence. GaN/AlGaN multi-quantum well (MQW) with cladding and waveguide layers were grown on the crack-free AlGaN template with low dislocation density. It was confirmed that the MQW on the AlGaN template emitted the stimulated emission at 355.5 nm through optical pumping experiment. The AlGaN obtained by 2-step SAG would provide high crystal quality for highly-efficient optoelectronic devices as well as the ultraviolet laser diode.

  3. MULTIPLE-QUANTUM NMR IN SOLIDS

    SciTech Connect

    Yen, Y-S.

    1982-11-01

    Time domain multiple-quantum (MQ) nuclear magnetic resonance (NMR) spectroscopy is a powerful tool for spectral simplification and for providing new information on molecular dynamics. In this thesis, applications of MQ NMR are presented and show distinctly the advantages of this method over the conventional single-quantum NMR. Chapter 1 introduces the spin Hamiltonians, the density matrix formalism and some basic concepts of MQ NMR spectroscopy. In chapter 2, {sup 14}N double-quantum coherence is observed with high sensitivity in isotropic solution, using only the magnetization of bound protons. Spin echoes are used to obtain the homogeneous double-quantum spectrum and to suppress a large H{sub 2}O solvent signal. Chapter 3 resolves the main difficulty in observing high MQ transitions in solids. Due to the profusion of spin transitions in a solid, individual lines are unresolved. Excitation and detection of high quantum transitions by normal schemes are thus difficult. To ensure that overlapping lines add constructively and thereby to enhance sensitivity, time-reversal pulse sequences are used to generate all lines in phase. Up to 22-quantum {sup 1}H absorption in solid adamantane is observed. A time dependence study shows an increase in spin correlations as the excitation time increased. In chapter 4, a statistical theory of MQ second moments is developed for coupled spins of spin I = 1/2. The model reveals that the ratio of the average dipolar coupling to the rms value largely determines the dependence of second moments on the number of quanta. The results of this model are checked against computer-calculated and experimental second moments, and show good agreement. A simple scheme is proposed in chapter 5 for sensitivity improvement in a MQ experiment. The scheme involves acquiring all of the signal energy available in the detection period by applying pulsed spinlocking and sampling between pulses. Using this technique on polycrystalline adamantane, a large

  4. Multiple network alignment on quantum computers

    NASA Astrophysics Data System (ADS)

    Daskin, Anmer; Grama, Ananth; Kais, Sabre

    2014-12-01

    Comparative analyses of graph-structured datasets underly diverse problems. Examples of these problems include identification of conserved functional components (biochemical interactions) across species, structural similarity of large biomolecules, and recurring patterns of interactions in social networks. A large class of such analyses methods quantify the topological similarity of nodes across networks. The resulting correspondence of nodes across networks, also called node alignment, can be used to identify invariant subgraphs across the input graphs. Given graphs as input, alignment algorithms use topological information to assign a similarity score to each -tuple of nodes, with elements (nodes) drawn from each of the input graphs. Nodes are considered similar if their neighbors are also similar. An alternate, equivalent view of these network alignment algorithms is to consider the Kronecker product of the input graphs and to identify high-ranked nodes in the Kronecker product graph. Conventional methods such as PageRank and HITS (Hypertext-Induced Topic Selection) can be used for this purpose. These methods typically require computation of the principal eigenvector of a suitably modified Kronecker product matrix of the input graphs. We adopt this alternate view of the problem to address the problem of multiple network alignment. Using the phase estimation algorithm, we show that the multiple network alignment problem can be efficiently solved on quantum computers. We characterize the accuracy and performance of our method and show that it can deliver exponential speedups over conventional (non-quantum) methods.

  5. Multiple network alignment on quantum computers

    NASA Astrophysics Data System (ADS)

    Daskin, Anmer; Grama, Ananth; Kais, Sabre

    2014-09-01

    Comparative analyses of graph structured datasets underly diverse problems. Examples of these problems include identification of conserved functional components (biochemical interactions) across species, structural similarity of large biomolecules, and recurring patterns of interactions in social networks. A large class of such analyses methods quantify the topological similarity of nodes across networks. The resulting correspondence of nodes across networks, also called node alignment, can be used to identify invariant subgraphs across the input graphs. Given $k$ graphs as input, alignment algorithms use topological information to assign a similarity score to each $k$-tuple of nodes, with elements (nodes) drawn from each of the input graphs. Nodes are considered similar if their neighbors are also similar. An alternate, equivalent view of these network alignment algorithms is to consider the Kronecker product of the input graphs, and to identify high-ranked nodes in the Kronecker product graph. Conventional methods such as PageRank and HITS (Hypertext Induced Topic Selection) can be used for this purpose. These methods typically require computation of the principal eigenvector of a suitably modified Kronecker product matrix of the input graphs. We adopt this alternate view of the problem to address the problem of multiple network alignment. Using the phase estimation algorithm, we show that the multiple network alignment problem can be efficiently solved on quantum computers. We characterize the accuracy and performance of our method, and show that it can deliver exponential speedups over conventional (non-quantum) methods.

  6. Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

    SciTech Connect

    Guo, Wei Bryan, Zachary; Kirste, Ronny; Bryan, Isaac; Hussey, Lindsay; Bobea, Milena; Haidet, Brian; Collazo, Ramón; Sitar, Zlatko; Xie, Jinqiao; Mita, Seiji; Gerhold, Michael

    2014-03-14

    Optical gain spectra for ∼250 nm stimulated emission were compared in three different AlGaN-based structures grown on single crystalline AlN substrates: a single AlGaN film, a double heterostructure (DH), and a Multiple Quantum Well (MQW) structure; respective threshold pumping power densities of 700, 250, and 150 kW/cm{sup 2} were observed. Above threshold, the emission was transverse-electric polarized and as narrow as 1.8 nm without a cavity. The DH and MQW structures showed gain values of 50–60 cm{sup −1} when pumped at 1 MW/cm{sup 2}. The results demonstrated the excellent optical quality of the AlGaN-based heterostructures grown on AlN substrates and their potential for realizing electrically pumped sub-280 nm laser diodes.

  7. Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations

    NASA Astrophysics Data System (ADS)

    Francesco Pecora, Emanuele; Zhang, Wei; Yu. Nikiforov, A.; Zhou, Lin; Smith, David J.; Yin, Jian; Paiella, Roberto; Dal Negro, Luca; Moustakas, T. D.

    2012-02-01

    Deep-UV optical gain has been demonstrated in Al0.7Ga0.3N/AlN multiple quantum wells under femtosecond optical pumping. Samples were grown by molecular beam epitaxy under a growth mode that introduces band structure potential fluctuations and high-density nanocluster-like features within the AlGaN wells. A maximum net modal gain value of 118 ± 9 cm-1 has been measured and the transparency threshold of 5 ± 1 µJ/cm2 was experimentally determined, corresponding to 1.4 × 1017 cm-3 excited carriers. These findings pave the way for the demonstration of solid-state lasers with sub-250 nm emission at room temperature.

  8. Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

    SciTech Connect

    Lekhal, K.; Damilano, B. De Mierry, P.; Vennéguès, P.; Ngo, H. T.; Rosales, D.; Gil, B.; Hussain, S.

    2015-04-06

    Yellow/amber (570–600 nm) emitting In{sub x}Ga{sub 1−x}N/Al{sub y}Ga{sub 1−y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1−x}N QWs by the Al{sub y}Ga{sub 1−y}N layers, respectively.

  9. Multiple-state quantum Otto engine, 1D box system

    SciTech Connect

    Latifah, E.; Purwanto, A.

    2014-03-24

    Quantum heat engines produce work using quantum matter as their working substance. We studied adiabatic and isochoric processes and defined the general force according to quantum system. The processes and general force are used to evaluate a quantum Otto engine based on multiple-state of one dimensional box system and calculate the efficiency. As a result, the efficiency depends on the ratio of initial and final width of system under adiabatic processes.

  10. Quantum cosmological perturbations of multiple fluids

    NASA Astrophysics Data System (ADS)

    Peter, Patrick; Pinto-Neto, N.; Vitenti, Sandro D. P.

    2016-01-01

    The formalism to treat quantization and evolution of cosmological perturbations of multiple fluids is described. We first construct the Lagrangian for both the gravitational and matter parts, providing the necessary relevant variables and momenta leading to the quadratic Hamiltonian describing linear perturbations. The final Hamiltonian is obtained without assuming any equations of motions for the background variables. This general formalism is applied to the special case of two fluids, having in mind the usual radiation and matter mix which made most of our current Universe history. Quantization is achieved using an adiabatic expansion of the basis functions. This allows for an unambiguous definition of a vacuum state up to the given adiabatic order. Using this basis, we show that particle creation is well defined for a suitable choice of vacuum and canonical variables, so that the time evolution of the corresponding quantum fields is unitary. This provides constraints for setting initial conditions for an arbitrary number of fluids and background time evolution. We also show that the common choice of variables for quantization can lead to an ill-defined vacuum definition. Our formalism is not restricted to the case where the coupling between fields is small, but is only required to vary adiabatically with respect to the ultraviolet modes, thus paving the way to consistent descriptions of general models not restricted to single-field (or fluid).

  11. Quantum broadcasting multiple blind signature with constant size

    NASA Astrophysics Data System (ADS)

    Xiao, Min; Li, Zhenli

    2016-06-01

    Using quantum homomorphic signature in quantum network, we propose a quantum broadcasting multiple blind signature scheme. Different from classical signature and current quantum signature schemes, the multi-signature proposed in our scheme is not generated by simply putting the individual signatures together, but by aggregating the individual signatures based on homomorphic property. Therefore, the size of the multi-signature is constant. Furthermore, based on a wide range of investigation for the security of existing quantum signature protocols, our protocol is designed to resist possible forgery attacks against signature and message from the various attack sources and disavowal attacks from participants.

  12. Secure Multiparty Quantum Computation for Summation and Multiplication

    NASA Astrophysics Data System (ADS)

    Shi, Run-Hua; Mu, Yi; Zhong, Hong; Cui, Jie; Zhang, Shun

    2016-01-01

    As a fundamental primitive, Secure Multiparty Summation and Multiplication can be used to build complex secure protocols for other multiparty computations, specially, numerical computations. However, there is still lack of systematical and efficient quantum methods to compute Secure Multiparty Summation and Multiplication. In this paper, we present a novel and efficient quantum approach to securely compute the summation and multiplication of multiparty private inputs, respectively. Compared to classical solutions, our proposed approach can ensure the unconditional security and the perfect privacy protection based on the physical principle of quantum mechanics.

  13. Secure Multiparty Quantum Computation for Summation and Multiplication

    PubMed Central

    Shi, Run-hua; Mu, Yi; Zhong, Hong; Cui, Jie; Zhang, Shun

    2016-01-01

    As a fundamental primitive, Secure Multiparty Summation and Multiplication can be used to build complex secure protocols for other multiparty computations, specially, numerical computations. However, there is still lack of systematical and efficient quantum methods to compute Secure Multiparty Summation and Multiplication. In this paper, we present a novel and efficient quantum approach to securely compute the summation and multiplication of multiparty private inputs, respectively. Compared to classical solutions, our proposed approach can ensure the unconditional security and the perfect privacy protection based on the physical principle of quantum mechanics. PMID:26792197

  14. Secure Multiparty Quantum Computation for Summation and Multiplication.

    PubMed

    Shi, Run-hua; Mu, Yi; Zhong, Hong; Cui, Jie; Zhang, Shun

    2016-01-01

    As a fundamental primitive, Secure Multiparty Summation and Multiplication can be used to build complex secure protocols for other multiparty computations, specially, numerical computations. However, there is still lack of systematical and efficient quantum methods to compute Secure Multiparty Summation and Multiplication. In this paper, we present a novel and efficient quantum approach to securely compute the summation and multiplication of multiparty private inputs, respectively. Compared to classical solutions, our proposed approach can ensure the unconditional security and the perfect privacy protection based on the physical principle of quantum mechanics. PMID:26792197

  15. Multiplicity-free Quantum 6 j-Symbols for

    NASA Astrophysics Data System (ADS)

    Nawata, Satoshi; Pichai, Ramadevi; Zodinmawia

    2013-12-01

    We conjecture a closed form expression for the simplest class of multiplicity-free quantum 6 j-symbols for . The expression is a natural generalization of the quantum 6 j-symbols for obtained by Kirillov and Reshetikhin. Our conjectured form enables computation of colored HOMFLY polynomials for various knots and links carrying arbitrary symmetric representations.

  16. Multiple-server Flexible Blind Quantum Computation in Networks

    NASA Astrophysics Data System (ADS)

    Kong, Xiaoqin; Li, Qin; Wu, Chunhui; Yu, Fang; He, Jinjun; Sun, Zhiyuan

    2016-06-01

    Blind quantum computation (BQC) can allow a client with limited quantum power to delegate his quantum computation to a powerful server and still keep his own data private. In this paper, we present a multiple-server flexible BQC protocol, where a client who only needs the ability of accessing qua ntum channels can delegate the computational task to a number of servers. Especially, the client's quantum computation also can be achieved even when one or more delegated quantum servers break down in networks. In other words, when connections to certain quantum servers are lost, clients can adjust flexibly and delegate their quantum computation to other servers. Obviously it is trivial that the computation will be unsuccessful if all servers are interrupted.

  17. Multiple-server Flexible Blind Quantum Computation in Networks

    NASA Astrophysics Data System (ADS)

    Kong, Xiaoqin; Li, Qin; Wu, Chunhui; Yu, Fang; He, Jinjun; Sun, Zhiyuan

    2016-02-01

    Blind quantum computation (BQC) can allow a client with limited quantum power to delegate his quantum computation to a powerful server and still keep his own data private. In this paper, we present a multiple-server flexible BQC protocol, where a client who only needs the ability of accessing qua ntum channels can delegate the computational task to a number of servers. Especially, the client's quantum computation also can be achieved even when one or more delegated quantum servers break down in networks. In other words, when connections to certain quantum servers are lost, clients can adjust flexibly and delegate their quantum computation to other servers. Obviously it is trivial that the computation will be unsuccessful if all servers are interrupted.

  18. Radiation Hard AlGaN Detectors and Imager

    SciTech Connect

    2012-05-01

    Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

  19. Study of correlations in molecular motion by multiple quantum NMR

    SciTech Connect

    Tang, J.H.

    1981-11-01

    Nuclear magnetic resonance is a very useful tool for characterizing molecular configurations through the measurement of transition frequencies and dipolar couplings. The measurement of spectral lineshapes, spin-lattice relaxation times, and transverse relaxation times also provide us with valuable information about correlations in molecular motion. The new technique of multiple quantum nuclear magnetic resonance has numerous advantages over the conventional single quantum NMR techniques in obtaining information about static and dynamic interactions of coupled spin systems. In the first two chapters, the theoretical background of spin Hamiltonians and the density matrix formalism of multiple quantum NMR is discussed. The creation and detection of multiple quantum coherence by multiple pulse sequence are discussed. Prototype multiple quantum spectra of oriented benzene are presented. Redfield relaxation theory and the application of multiple quantum NMR to the study of correlations in fluctuations are presented. A specific example of an oriented methyl group relaxed by paramagnetic impurities is studied in detail. The study of possible correlated motion between two coupled methyl groups by multiple quantum NMR is presented. For a six spin system it is shown that the four-quantum spectrum is sensitive to two-body correlations, and serves a ready test of correlated motion. The study of the spin-lattice dynamics of orienting or tunneling methyl groups (CH/sub 3/ and CD/sub 3/) at low temperatures is presented. The anisotropic spin-lattice relaxation of deuterated hexamethylbenzene, caused by the sixfold reorientation of the molecules, is investigated, and the NMR spectrometers and other experimental details are discussed.

  20. Computer studies of multiple-quantum spin dynamics

    SciTech Connect

    Murdoch, J.B.

    1982-11-01

    The excitation and detection of multiple-quantum (MQ) transitions in Fourier transform NMR spectroscopy is an interesting problem in the quantum mechanical dynamics of spin systems as well as an important new technique for investigation of molecular structure. In particular, multiple-quantum spectroscopy can be used to simplify overly complex spectra or to separate the various interactions between a nucleus and its environment. The emphasis of this work is on computer simulation of spin-system evolution to better relate theory and experiment.

  1. On Quantum Algorithm for Multiple Alignment of Amino Acid Sequences

    NASA Astrophysics Data System (ADS)

    Iriyama, Satoshi; Ohya, Masanori

    2009-02-01

    The alignment of genome sequences or amino acid sequences is one of fundamental operations for the study of life. Usual computational complexity for the multiple alignment of N sequences with common length L by dynamic programming is O(LN). This alignment is considered as one of the NP problems, so that it is desirable to find a nice algorithm of the multiple alignment. Thus in this paper we propose the quantum algorithm for the multiple alignment based on the works12,1,2 in which the NP complete problem was shown to be the P problem by means of quantum algorithm and chaos information dynamics.

  2. Multiple Exciton Generation in Quantum Dot Solar Cells

    NASA Astrophysics Data System (ADS)

    Semonin, O. E.

    Photovoltaics are limited in their power conversion efficiency (PCE) by very rapid relaxation of energetic carriers to the band edge. Therefore, photons from the visible and ultraviolet parts of the spectrum typically are not efficiently converted into electrical energy. One approach that can address this is multiple exciton generation (MEG), where a single photon of sufficient energy can generate multiple excited electron-hole pairs. This process has been shown to be more efficient in quantum dots than bulk semiconductors, but it has never been demonstrated in the photocurrent of a solar cell. In order to demonstrate that multiple exciton generation can address fundamental limits for conventional photovoltaics, I have developed prototype devices from colloidal PbS and PbSe quantum dot inks. I have characterized both the colloidal suspensions and films of quantum dots with the goal of understanding what properties determine the efficiency of the solar cell and of the MEG process. I have found surface chemistry effects on solar cells, photoluminescence, and MEG, and I have found some chemical treatments that lead to solar cells showing MEG. These devices show external quantum efficiency (EQE) greater than 100% for certain parts of the solar spectrum, and I extract internal quantum efficiency (IQE) consistent with previous measurements of colloidal suspensions of quantum dots. These findings are a small first step toward breaking the single junction Shockley-Queisser limit of present-day first and second generation solar cells, thus moving photovoltaic cells toward a new regime of efficiency.

  3. Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier

    NASA Astrophysics Data System (ADS)

    Jia, Chuanyu; Yu, Tongjun; Feng, Xiaohui; Wang, Kun; Zhang, Guoyi

    2016-09-01

    The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL.

  4. Capacity of multiple-input multiple-output quantum depolarizing channels

    NASA Astrophysics Data System (ADS)

    Xiao, Hailin; Ouyang, Shan

    2012-08-01

    Decoherence-free subspaces (DFS) are to utilize the symmetric properties of the interaction between the system and environment so that they can be tolerant against the effect of decoherence. In this paper, we propose multiple-input multiple-output (MIMO) scheme to drive a finite-dimensional quantum system into DFS. For quantum system, the scheme is not only immune to dephasing but also feasible with currently available technology. Motivated by Shannon mutual information, we derive the capacity of MIMO quantum depolarizing channels.

  5. Growth of AlGaN alloys exhibiting enhanced luminescence efficiency

    NASA Astrophysics Data System (ADS)

    Sampath, A. V.; Garrett, G. A.; Collins, C. J.; Sarney, W. L.; Readinger, E. D.; Newman, P. G.; Shen, H.; Wraback, M.

    2006-04-01

    Interest in developing ultraviolet emitters using the III-Nitride family of semiconductors has sparked considerable effort in fabricating AlGaN alloys that exhibit enhanced luminescence based on strong carrier localization, similar to their InGaN brethren. In this paper, we report on the growth of such alloys by plasma-assisted molecular beam epitaxy (PA-MBE) without the use of indium. This enhancement is attributed to the presence of nanoscale compositional inhomogeneities (NCIs) in these materials. The emission wavelength in these materials has been tuned between 275 nm and 340 nm by varying growth conditions. The effects of dislocations on double heterostructures (DHs) that employ an NCI AlGaN active region has been investigated, with an internal quantum efficiency as high as 32% obtained for the lowest dislocation density samples (3×1010 cm-2). Prototype DH-ultraviolet light emitting diodes (DH-UVLEDs) emitting at 324 nm were fabricated employing an NCI AlGaN alloy as the active region.

  6. Solid-state proton multiple-quantum NMR spectroscopy with fast magic angle spinning

    NASA Astrophysics Data System (ADS)

    Geen, Helen; Titman, Jeremy J.; Gottwald, Johannes; Spiess, Hans W.

    1994-09-01

    The feasibility of multiple-quantum NMR spectroscopy with high resolution for protons in solids is explored. A new multiple-quantum excitation sequence suitable for use with fast magic angle spinning is described, and its performance is compared to that of both static and slow-spinning multiple-quantum methods. Modified sequences with scale the rate of development of the multiple-quantum coherences are also demonstrated, and two-dimensional double-quantum spectra of adamantane and polycarbonate are presented.

  7. Solar-blind AlGaN 256x256 p-i-n detectors and focal plane arrays

    NASA Astrophysics Data System (ADS)

    Reine, M. B.; Hairston, A.; Lamarre, P.; Wong, K. K.; Tobin, S. P.; Sood, A. K.; Cooke, C.; Pophristic, M.; Guo, S.; Peres, B.; Singh, R.; Eddy, C. R., Jr.; Chowdhury, U.; Wong, M. M.; Dupuis, R. D.; Li, T.; DenBaars, S. P.

    2006-02-01

    This paper reports the development of aluminum-gallium nitride (AlGaN or Al xGa 1-xN) photodiode technology for high-operability 256×256 hybrid Focal Plane Arrays (FPAs) for solar-blind ultraviolet (UV) detection in the 260-280 nm spectral region. These hybrid UV FPAs consist of a 256×256 back-illuminated AlGaN p-i-n photodiode array, operating at zero bias voltage, bump-mounted to a matching 256×256 silicon CMOS readout integrated circuit (ROIC) chip. The unit cell size is 30×30 μm2. The photodiode arrays were fabricated from multilayer AlGaN films grown by MOCVD on 2" dia. UV-transparent sapphire substrates. Improvements in AlGaN material growth and device design enabled high quantum efficiency and extremely low leakage current to be achieved in high-operability 256×256 p-i-n photodiode arrays with cuton and cutoff wavelengths of 260 and 280 nm, placing the response in the solar-blind wavelength region (less than about 280 nm) where solar radiation is heavily absorbed by the ozone layer. External quantum efficiencies (at V=0, 270 nm, no antireflection coating) as high as 58% were measured in backilluminated devices. A number of 256×256 FPAs, with the AlGaN arrays fabricated from films grown at three different facilities, achieved response operabilities as high as 99.8%, response nonuniformities (σ/μ) as low as 2.5%, and zero-bias resistance median values as high as 1×10 16 ohm, corresponding to R 0A products of 7×10 10 ohm-cm2. Noise Equivalent Irradiance (NEI) data were measured on these FPAs. Median NEI values at 1 Hz are 250-500 photons/pixel-s, with best-element values as low as 90 photons/pixel-s at 1 Hz.

  8. Quantum Dot Solar Cells with Multiple Exciton Generation

    SciTech Connect

    Hanna, M. C.; Beard, M. C.; Johnson, J. C.; Murphy, J.; Ellingson, R. J.; Nozik, A. J.

    2005-11-01

    We have measured the quantum yield of the multiple exciton generation (MEG) process in quantum dots (QDs) of the lead-salt semiconductor family (PbSe, PbTe, and PbS) using fs pump-probe transient absorption measurements. Very high quantum yields (up to 300%) for charge carrier generation from MEG have been measured in all of the Pb-VI QDs. We have calculated the potential maximum performance of various MEG QD solar cells in the detailed balance limit. We examined a two-cell tandem PV device with singlet fission (SF), QD, and normal dye (N) absorbers in the nine possible series-connected combinations to compare the tandem combinations and identify the combinations with the highest theoretical efficiency. We also calculated the maximum efficiency of an idealized single-gap MEG QD solar cell with M multiplications and its performance under solar concentration.

  9. Optimum testing of multiple hypotheses in quantum detection theory

    NASA Technical Reports Server (NTRS)

    Yuen, H. P.; Kennedy, R. S.; Lax, M.

    1975-01-01

    The problem of specifying the optimum quantum detector in multiple hypotheses testing is considered for application to optical communications. The quantum digital detection problem is formulated as a linear programming problem on an infinite-dimensional space. A necessary and sufficient condition is derived by the application of a general duality theorem specifying the optimum detector in terms of a set of linear operator equations and inequalities. Existence of the optimum quantum detector is also established. The optimality of commuting detection operators is discussed in some examples. The structure and performance of the optimal receiver are derived for the quantum detection of narrow-band coherent orthogonal and simplex signals. It is shown that modal photon counting is asymptotically optimum in the limit of a large signaling alphabet and that the capacity goes to infinity in the absence of a bandwidth limitation.

  10. Detection of electromagnetic radiation using micromechanical multiple quantum wells structures

    DOEpatents

    Datskos, Panagiotis G [Knoxville, TN; Rajic, Slobodan [Knoxville, TN; Datskou, Irene [Knoxville, TN

    2007-07-17

    An apparatus and method for detecting electromagnetic radiation employs a deflectable micromechanical apparatus incorporating multiple quantum wells structures. When photons strike the quantum-well structure, physical stresses are created within the sensor, similar to a "bimetallic effect." The stresses cause the sensor to bend. The extent of deflection of the sensor can be measured through any of a variety of conventional means to provide a measurement of the photons striking the sensor. A large number of such sensors can be arranged in a two-dimensional array to provide imaging capability.

  11. Coherent coupling of multiple transverse modes in quantum cascade lasers.

    PubMed

    Yu, Nanfang; Diehl, Laurent; Cubukcu, Ertugrul; Bour, David; Corzine, Scott; Höfler, Gloria; Wojcik, Aleksander K; Crozier, Kenneth B; Belyanin, Alexey; Capasso, Federico

    2009-01-01

    Quantum cascade lasers are a unique laboratory for studying nonlinear laser dynamics because of their high intracavity intensity, strong intersubband optical nonlinearity, and an unusual combination of relaxation time scales. Here we investigate the nonlinear coupling between the transverse modes of quantum cascade lasers. We present evidence for stable phase coherence of multiple transverse modes over a large range of injection currents. We explain the phase coherence by a four-wave mixing interaction originating from the strong optical nonlinearity of the gain transition. The phase-locking conditions predicted by theory are supported by spectral data and both near- and far-field mode measurements. PMID:19257192

  12. Multiple-quantum dynamics in solid state NMR

    NASA Astrophysics Data System (ADS)

    Baum, J.; Munowitz, M.; Garroway, A. N.; Pines, A.

    1985-09-01

    Recently developed solid state multiple-quantum NMR methods are applied to extended coupling networks, where direct dipole-dipole interactions can be used to create coherences of very high order (˜100). The progressive development of multiple-quantum coherence over time depends upon the formation of multiple-spin correlations, a phenomenon which also accompanies the normal decay to equilibrium of the free induction signal in a solid. Both the time development and the observed distributions of coherence can be approached statistically, with the spin system described by a time-dependent density operator whose elements are completely uncorrelated at sufficiently long times. With this point of view, we treat the distribution of coherence in a multiple-quantum spectrum as Gaussian, and characterize a spectrum obtained for a given preparation time by its variance. The variance of the distribution is associated roughly with the number of coupled spins effectively interacting, and its steady growth with time reflects the continual expansion of the system under the action of the dipolar interactions. The increase in effective system ``size'' is accounted for by a random walk model for the time development of the density operator. Experimental results are presented for hexamethylbenzene, adamantane, and squaric acid. The formation of coherence in systems containing physically isolated clusters is also investigated, and a simple method for estimating the number of spins involved is demonstrated.

  13. Multiple-quantum dynamics in solid state NMR

    SciTech Connect

    Baum, J.; Munowitz, M.; Garroway, A.N.; Pines, A.

    1985-09-01

    Recently developed solid state multiple-quantum NMR methods are applied to extended coupling networks, where direct dipole--dipole interactions can be used to create coherences of very high order (approx. 100). The progressive development of multiple-quantum coherence over time depends upon the formation of multiple-spin correlations, a phenomenon which also accompanies the normal decay to equilibrium of the free induction signal in a solid. Both the time development and the observed distributions of coherence can be approached statistically, with the spin system described by a time-dependent density operator whose elements are completely uncorrelated at sufficiently long times. With this point of view, we treat the distribution of coherence in a multiple-quantum spectrum as Gaussian, and characterize a spectrum obtained for a given preparation time by its variance. The variance of the distribution is associated roughly with the number of coupled spins effectively interacting, and its steady growth with time reflects the continual expansion of the system under the action of the dipolar interactions. The increase in effective system ''size'' is accounted for by a random walk model for the time development of the density operator. Experimental results are presented for hexamethylbenzene, adamantane, and squaric acid. The formation of coherence in systems containing physically isolated clusters is also investigated, and a simple method for estimating the number of spins involved is demonstrated.

  14. Multiple-junction quantum cascade photodetectors for thermophotovoltaic energy conversion.

    PubMed

    Yin, Jian; Paiella, Roberto

    2010-01-18

    The use of intersubband transitions in quantum cascade structures for thermophotovoltaic energy conversion is investigated numerically. The intrinsic cascading scheme, spectral agility, and design flexibility of these structures make them ideally suited to the development of high efficiency multiple-junction thermophotovoltaic detectors. A specific implementation of this device concept is designed, based on bound-to-continuum intersubband transitions in large-conduction-band-offset In(0.7)Ga(0.3)As/AlAs(0.8)Sb(0.2) quantum wells. The device electrical characteristics in the presence of thermal radiation from a blackbody source at 1300 K are calculated, from which a maximum extracted power density of 1.4 W/cm(2) is determined. This value compares favorably with the present state-of-the-art in interband thermophotovoltaic energy conversion, indicating that quantum cascade photodetectors may provide a promising approach to improve energy extraction from thermal sources. PMID:20173989

  15. Controllable multiple-quantum transitions in a T-shaped small quantum dot-ring system

    NASA Astrophysics Data System (ADS)

    Chen, Xiongwen; Chen, Baoju; Song, Kehui; Zhou, Guanghui

    2016-05-01

    Based on the tight-binding model and the slave boson mean field approximation, we investigate the electron transport properties in a small quantum dot (QD)-ring system. Namely, a strongly correlated QD not only attaches directly to two normal metallic electrodes, but also forms a magnetic control Aharonov-Bohm quantum ring with a few noninteracting QDs. We show that the parity effect, the Kondo effect, and the multiple Fano effects coexist in our system. Moreover, the parities, defined by the odd- and even-numbered energy levels in this system, can be switched by adjusting magnetic flux phase ϕ located at the center of the quantum ring, which induces multiple controllable Fano-interference energy pathways. Therefore, the constructive and destructive multi-Fano interference transition, the Kondo and Fano resonance transition at the Fermi level, the Fano resonance and ani-resonance transition are realized in the even parity system. They can also be observed in the odd parity system when one adjusts the phase ϕ and the gate voltage Vg applied to the noninteracting QDs. The multi-quantum transitions determine some interesting transport properties such as the current switch and its multi-flatsteps, the differential conductance switch at zero bias voltage and its oscillation or quantization at the low bias voltage. These results may be useful for the observation of multiple quantum effect interplays experimentally and the design of controllable QD-based device.

  16. Improvement of a quantum broadcasting multiple blind signature scheme based on quantum teleportation

    NASA Astrophysics Data System (ADS)

    Zhang, Wei; Qiu, Daowen; Zou, Xiangfu

    2016-06-01

    Recently, a broadcasting multiple blind signature scheme based on quantum teleportation has been proposed for the first time. It is claimed to have unconditional security and properties of quantum multiple signature and quantum blind signature. In this paper, we analyze the security of the protocol and show that each signatory can learn the signed message by a single-particle measurement and the signed message can be modified at random by any attacker according to the scheme. Furthermore, there are some participant attacks and external attacks existing in the scheme. Finally, we present an improved scheme and show that it can resist all of the mentioned attacks. Additionally, the secret keys can be used again and again, making it more efficient and practical.

  17. Improvement of a quantum broadcasting multiple blind signature scheme based on quantum teleportation

    NASA Astrophysics Data System (ADS)

    Zhang, Wei; Qiu, Daowen; Zou, Xiangfu

    2016-03-01

    Recently, a broadcasting multiple blind signature scheme based on quantum teleportation has been proposed for the first time. It is claimed to have unconditional security and properties of quantum multiple signature and quantum blind signature. In this paper, we analyze the security of the protocol and show that each signatory can learn the signed message by a single-particle measurement and the signed message can be modified at random by any attacker according to the scheme. Furthermore, there are some participant attacks and external attacks existing in the scheme. Finally, we present an improved scheme and show that it can resist all of the mentioned attacks. Additionally, the secret keys can be used again and again, making it more efficient and practical.

  18. Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes[Multiple Quantum Wells

    SciTech Connect

    Hansen, M.; Abare, A.C.; Kozodoy, P.; Katona, T.M.; Craven, M.D.; Speck, J.S.; Mishra, U.K.; Coldren, L.A.; DenBaars, S.P.

    2000-07-01

    AlGaN/GaN strained layer superlattices have been employed in the cladding layers of InGaN multi-quantum well laser diodes grown by metalorganic chemical vapor deposition (MOCVD). Superlattices have been investigated for strain relief of the cladding layer, as well as an enhanced hole concentration, which is more than ten times the value obtained for bulk AlGaN films. Laser diodes with strained layer superlattices as cladding layers were shown to have superior structural and electrical properties compared to laser diodes with bulk AlGaN cladding layers. As the period of the strained layer superlattices is decreased, the threshold voltage, as well as the threshold current density, is decreased. The resistance to vertical conduction through p-type superlattices with increasing superlattice period is not offset by the increase in hole concentration for increasing superlattice spacing, resulting in higher voltages.

  19. Multiple Exciton Generation in PbSe Quantum Dots and Quantum Dot Solar Cells

    SciTech Connect

    Beard, M. C.; Semonin, O. E.; Nozik, A. J.; Midgett, A. G.; Luther, J. M.

    2012-01-01

    Multiple exciton generation in quantum dots (QDs) has been intensively studied as a way to enhance solar energy conversion by channeling the excess photon energy (energy greater than the bandgap) to produce multiple electron-hole pairs. Among other useful properties, quantum confinement can both increase Coulomb interactions that drive the MEG process and decrease the electron-phonon coupling that cools hot-excitons in bulk semiconductors. We have demonstrated that MEG in PbSe QDs is about two times as efficient at producing multiple electron-hole pairs than bulk PbSe. I will discuss our recent results investigating MEG in PbSe, PbS and PbSxSe1-x, which exhibits an interesting size-dependence of the MEG efficiency. Thin films of electronically coupled PbSe QDs have shown promise in simple photon-to-electron conversion architectures with power conversion efficiencies above 5%. We recently reported an enhancement in the photocurrent resulting from MEG in PbSe QD-based solar cells. We find that the external quantum efficiency (spectrally resolved ratio of collected charge carriers to incident photons) peaked at 114% in the best devices measured, with an internal quantum efficiency of 130%. These results demonstrate that MEG charge carriers can be collected in suitably designed QD solar cells. We compare our results to transient absorption measurements and find reasonable agreement.

  20. Robust Multiple-Range Coherent Quantum State Transfer

    NASA Astrophysics Data System (ADS)

    Chen, Bing; Peng, Yan-Dong; Li, Yong; Qian, Xiao-Feng

    2016-07-01

    We propose a multiple-range quantum communication channel to realize coherent two-way quantum state transport with high fidelity. In our scheme, an information carrier (a qubit) and its remote partner are both adiabatically coupled to the same data bus, i.e., an N-site tight-binding chain that has a single defect at the center. At the weak interaction regime, our system is effectively equivalent to a three level system of which a coherent superposition of the two carrier states constitutes a dark state. The adiabatic coupling allows a well controllable information exchange timing via the dark state between the two carriers. Numerical results show that our scheme is robust and efficient under practically inevitable perturbative defects of the data bus as well as environmental dephasing noise.

  1. Thermodynamics of quantum systems with multiple conserved quantities

    PubMed Central

    Guryanova, Yelena; Popescu, Sandu; Short, Anthony J.; Silva, Ralph; Skrzypczyk, Paul

    2016-01-01

    Recently, there has been much progress in understanding the thermodynamics of quantum systems, even for small individual systems. Most of this work has focused on the standard case where energy is the only conserved quantity. Here we consider a generalization of this work to deal with multiple conserved quantities. Each conserved quantity, which, importantly, need not commute with the rest, can be extracted and stored in its own battery. Unlike the standard case, in which the amount of extractable energy is constrained, here there is no limit on how much of any individual conserved quantity can be extracted. However, other conserved quantities must be supplied, and the second law constrains the combination of extractable quantities and the trade-offs between them. We present explicit protocols that allow us to perform arbitrarily good trade-offs and extract arbitrarily good combinations of conserved quantities from individual quantum systems. PMID:27384384

  2. Robust Multiple-Range Coherent Quantum State Transfer.

    PubMed

    Chen, Bing; Peng, Yan-Dong; Li, Yong; Qian, Xiao-Feng

    2016-01-01

    We propose a multiple-range quantum communication channel to realize coherent two-way quantum state transport with high fidelity. In our scheme, an information carrier (a qubit) and its remote partner are both adiabatically coupled to the same data bus, i.e., an N-site tight-binding chain that has a single defect at the center. At the weak interaction regime, our system is effectively equivalent to a three level system of which a coherent superposition of the two carrier states constitutes a dark state. The adiabatic coupling allows a well controllable information exchange timing via the dark state between the two carriers. Numerical results show that our scheme is robust and efficient under practically inevitable perturbative defects of the data bus as well as environmental dephasing noise. PMID:27364891

  3. Thermodynamics of quantum systems with multiple conserved quantities

    NASA Astrophysics Data System (ADS)

    Guryanova, Yelena; Popescu, Sandu; Short, Anthony J.; Silva, Ralph; Skrzypczyk, Paul

    2016-07-01

    Recently, there has been much progress in understanding the thermodynamics of quantum systems, even for small individual systems. Most of this work has focused on the standard case where energy is the only conserved quantity. Here we consider a generalization of this work to deal with multiple conserved quantities. Each conserved quantity, which, importantly, need not commute with the rest, can be extracted and stored in its own battery. Unlike the standard case, in which the amount of extractable energy is constrained, here there is no limit on how much of any individual conserved quantity can be extracted. However, other conserved quantities must be supplied, and the second law constrains the combination of extractable quantities and the trade-offs between them. We present explicit protocols that allow us to perform arbitrarily good trade-offs and extract arbitrarily good combinations of conserved quantities from individual quantum systems.

  4. Robust Multiple-Range Coherent Quantum State Transfer

    PubMed Central

    Chen, Bing; Peng, Yan-Dong; Li, Yong; Qian, Xiao-Feng

    2016-01-01

    We propose a multiple-range quantum communication channel to realize coherent two-way quantum state transport with high fidelity. In our scheme, an information carrier (a qubit) and its remote partner are both adiabatically coupled to the same data bus, i.e., an N-site tight-binding chain that has a single defect at the center. At the weak interaction regime, our system is effectively equivalent to a three level system of which a coherent superposition of the two carrier states constitutes a dark state. The adiabatic coupling allows a well controllable information exchange timing via the dark state between the two carriers. Numerical results show that our scheme is robust and efficient under practically inevitable perturbative defects of the data bus as well as environmental dephasing noise. PMID:27364891

  5. Thermodynamics of quantum systems with multiple conserved quantities.

    PubMed

    Guryanova, Yelena; Popescu, Sandu; Short, Anthony J; Silva, Ralph; Skrzypczyk, Paul

    2016-01-01

    Recently, there has been much progress in understanding the thermodynamics of quantum systems, even for small individual systems. Most of this work has focused on the standard case where energy is the only conserved quantity. Here we consider a generalization of this work to deal with multiple conserved quantities. Each conserved quantity, which, importantly, need not commute with the rest, can be extracted and stored in its own battery. Unlike the standard case, in which the amount of extractable energy is constrained, here there is no limit on how much of any individual conserved quantity can be extracted. However, other conserved quantities must be supplied, and the second law constrains the combination of extractable quantities and the trade-offs between them. We present explicit protocols that allow us to perform arbitrarily good trade-offs and extract arbitrarily good combinations of conserved quantities from individual quantum systems. PMID:27384384

  6. Multiple Energy Exciton Shelves in Quantum-Dot-DNA Nanobioelectronics.

    PubMed

    Goodman, Samuel M; Singh, Vivek; Ribot, Josep Casamada; Chatterjee, Anushree; Nagpal, Prashant

    2014-11-01

    Quantum dots (QDs) are semiconductor nanocrystallites with multiple size-dependent quantum-confined states that are being explored for utilizing broadband radiation. While DNA has been used for the self-assembly of nanocrystals, it has not been investigated for the formation of simultaneous conduction pathways for transporting multiple energy charges or excitons. These exciton shelves can be formed by coupling the conduction band, valence band, and hot-carrier states in QDs with different HOMO-LUMO levels of DNA nucleobases, resulting from varying degrees of conjugation in the nucleobases. Here we present studies on the electronic density of states in four naturally occurring nucleobases (guanine, thymine, cytosine, and adenine), which energetically couple to quantized states in semiconductor QDs. Using scanning tunneling spectroscopy of single nanoparticle-DNA constructs, we demonstrate composite DOS of chemically coupled DNA oligonucleotides and cadmium chalcogenide QDs (CdS, CdSe, CdTe). While perfectly aligned CdTe QD-DNA states lead to exciton shelves for multiple energy charge transport, mismatched energy levels in CdSe QD-DNA introduce intrabandgap states that can lead to charge trapping and recombination. Although further investigations are required to study the rates of charge transfer, recombination, and back-electron transfer, these results can have important implications for the development of a new class of nanobioelectronics and biological transducers. PMID:26278768

  7. Multiple quantum well AlGaAs nanowires.

    PubMed

    Chen, Chen; Braidy, Nadi; Couteau, Christophe; Fradin, Cécile; Weihs, Gregor; LaPierre, Ray

    2008-02-01

    This letter reports on the growth, structure, and luminescent properties of individual multiple quantum well (MQW) AlGaAs nanowires (NWs). The composition modulations (MQWs) are obtained by alternating the elemental flux of Al and Ga during the molecular beam epitaxy growth of the AlGaAs wire on GaAs (111)B substrates. Transmission electron microscopy and energy dispersive X-ray spectroscopy performed on individual NWs are consistent with a configuration composed of conical segments stacked along the NW axis. Microphotoluminescence measurements and confocal microscopy showed enhanced light emission from the MQW NWs as compared to nonsegmented NWs due to carrier confinement and sidewall passivation. PMID:18184023

  8. Quantum canonical ensemble and correlation femtoscopy at fixed multiplicities

    NASA Astrophysics Data System (ADS)

    Akkelin, S. V.; Sinyukov, Yu. M.

    2016-07-01

    Identical particle correlations at fixed multiplicity are considered by means of quantum canonical ensemble of finite systems. We calculate one-particle momentum spectra and two-particle Bose-Einstein correlation functions in the ideal gas by using a recurrence relation for the partition function. Within such a model we investigate the validity of the thermal Wick's theorem and its applicability for decomposition of the two-particle distribution function. The dependence of the Bose-Einstein correlation parameters on the average momentum of the particle pair is also investigated. Specifically, we present the analytical formulas that allow one to estimate the effect of suppressing the correlation functions in a finite canonical system. The results can be used for the femtoscopy analysis of the A +A and p +p collisions with selected (fixed) multiplicity.

  9. Quantum Dot Solar Cells: High Efficiency through Multiple Exciton Generation

    SciTech Connect

    Hanna, M. C.; Ellingson, R. J.; Beard, M.; Yu, P.; Micic, O. I.; Nozik, A. J.; c.

    2005-01-01

    Impact ionization is a process in which absorbed photons in semiconductors that are at least twice the bandgap can produce multiple electron-hole pairs. For single-bandgap photovoltaic devices, this effect produces greatly enhanced theoretical thermodynamic conversion efficiencies that range from 45-85%, depending upon solar concentration, the cell temperature, and the number of electron-hole pairs produced per photon. For quantum dots (QDs), electron-hole pairs exist as excitons. We have observed astoundingly efficient multiple exciton generation (MEG) in QDs of PbSe (bulk Eg = 0.28 eV), ranging in diameter from 3.9 to 5.7nm (Eg = 0.73, 0.82, and 0.91 eV, respectively). The effective masses of electron and holes are about equal in PbSe, and the onset for efficient MEG occurs at about three times the QD HOMO-LUMO transition (its ''bandgap''). The quantum yield rises quickly after the onset and reaches 300% at 4 x Eg (3.64 eV) for the smallest QD; this means that every QD in the sample produces three electron-hole pairs/photon.

  10. Time evolution of multiple quantum coherences in NMR

    NASA Astrophysics Data System (ADS)

    Sánchez, Claudia M.; Pastawski, Horacio M.; Levstein, Patricia R.

    2007-09-01

    In multiple quantum NMR, individual spins become correlated with one another over time through their dipolar couplings. In this way, the usual Zeeman selection rule can be overcome and forbidden transitions can be excited. Experimentally, these multiple quantum coherences (MQC) are formed by the application of appropriate sequences of radio frequency pulses that force the spins to act collectively. 1H spin coherences of even order up to 16 were excited in a polycrystalline sample of ferrocene (C 5H 5) 2Fe and up to 32 in adamantane (C 10H 16) and their evolutions studied in different conditions: (a) under the natural dipolar Hamiltonian, H ZZ (free evolution) and with H ZZ canceled out by (b) time reversion or (c) with the MREV8 sequence. The results show that when canceling H ZZ the coherences decay with characteristic times ( τc≈200 μs), which are more than one order of magnitude longer than those under free evolution ( τc≈10 μs). In addition, it is observed that with both MREV8 and time reversion sequences, the higher the order of the coherence (larger number of correlated spins) the faster the speed of degradation, as it happens during the evolution with H ZZ. In both systems, it is observed that the sequence of time reversion of the dipolar Hamiltonian preserves coherences for longer times than MREV8.

  11. Enhancement of blue InGaN light-emitting diodes by using AlGaN increased composition-graded barriers

    NASA Astrophysics Data System (ADS)

    Yan, Lei; Zhiqiang, Liu; Miao, He; Xiaoyan, Yi; Junxi, Wang; Jinmin, Li; Shuwen, Zheng; Shuti, Li

    2015-05-01

    The characteristics of nitride-based blue light-emitting diodes (LEDs) with AlGaN composition-graded barriers are analyzed numerically. The carrier concentrations in the quantum wells (QWs), the energy band diagrams, the electrostatic fields, and the light output power are investigated by APSYS software. The simulation results show that the LED with AlGaN composition-graded barriers has a better performance than its AlGaN/InGaN counterpart owing to the increase of hole injection and the enhancement of electron confinement. The simulation results also suggest that the output power is enhanced significantly and the efficiency droop is markedly improved when the AlGaN barriers are replaced by AlGaN composition-graded barriers. Project supported by the National High Technology Program of China (Nos. 2011AA03A105, 2013AA03A101), the National Natural Science Foundation of China (Nos. 61306051, 61306050, 11474105), the Beijing Municipal Science and Technology Project (No. D12110300140000), the National Basic Research Program of China (No. 2011CB301902), the Industry-Academia-Research Union Special Fund of Guangdong Province of China (No. 2012B091000169), the Science & Technology Innovation Platform of Industry-Academia-Research Union of Guangdong Province-Ministry Cooperation Special Fund of China (No. 2012B090600038), the Specialized Research Fund for the Doctoral Program of Higher Education (No. 20134407110008), and the Science research innovation foundation of South China Normal University of China (No. 2013kyjj041).

  12. Solar-blind AlGaN 256×256 p-i-n detectors and focal plane arrays

    NASA Astrophysics Data System (ADS)

    Reine, M. B.; Hairston, A.; Lamarre, P.; Wong, K. K.; Tobin, S. P.; Sood, A. K.; Cooke, C.; Pophristic, M.; Guo, S.; Peres, B.; Singh, R.; Eddy, C. R. _Jr., Jr.; Chowdhury, U.; Wong, M. M.; Dupuis, R. D.; Li, T.; DenBaars, S. P.

    2006-02-01

    This paper reports the development of aluminum-gallium nitride (AlGaN or Al xGa 1-xN) photodiode technology for high-operability 256×256 hybrid Focal Plane Arrays (FPAs) for solar-blind ultraviolet (UV) detection in the 260-280 nm spectral region. These hybrid UV FPAs consist of a 256×256 back-illuminated AlGaN p-i-n photodiode array, operating at zero bias voltage, bump-mounted to a matching 256×256 silicon CMOS readout integrated circuit (ROIC) chip. The unit cell size is 30×30 μm2. The photodiode arrays were fabricated from multilayer AlGaN films grown by MOCVD on 2" dia. UV-transparent sapphire substrates. Improvements in AlGaN material growth and device design enabled high quantum efficiency and extremely low leakage current to be achieved in high-operability 256×256 p-i-n photodiode arrays with cuton and cutoff wavelengths of 260 and 280 nm, placing the response in the solar-blind wavelength region (less than about 280 nm) where solar radiation is heavily absorbed by the ozone layer. External quantum efficiencies (at V=0, 270 nm, no antireflection coating) as high as 58% were measured in back-illuminated devices. A number of 256×256 FPAs, with the AlGaN arrays fabricated from films grown at three different facilities, achieved response operabilities as high as 99.8%, response nonuniformities (σ/μ) as low as 2.5%, and zero-bias resistance median values as high as 1×10 16 ohm, corresponding to R0A products of 7×10 10 ohm-cm2. Noise Equivalent Irradiance (NEI) data were measured on these FPAs. Median NEI values at 1 Hz are 250-500 photons/pixel-s, with best-element values as low as 90 photons/pixel-s at 1 Hz.

  13. Scalable generation of multiple quantum correlated beams from hot rubidium vapors

    NASA Astrophysics Data System (ADS)

    Jing, Jietai; Qin, Zhongzhong; Wang, Hailong; Kong, Jia; Cao, Leiming; Zhang, Weiping

    2013-05-01

    Quantum correlation and quantum entanglement shared among multiple quantum nodes are the fundamental ingredients for the future quantum internet. In order to make an efficient quantum interface between multi-mode quantum light sources and the atomic ensemble which has been proven to be a good candidate for quantum memory and quantum repeater, it is necessary to generate the multimode quantum light sources which match the atomic transition lines of the atomic ensemble. Here we present a scalable method for generating the multiple quantum correlated beams by using multiple four wave mixing processes in hot Rubidium vapor and we experimentally showed that the strong quantum correlation among the three bright beams. Their relative intensity difference is -5.6dB below the correspondent shot noise limit and the squeezing from only one vapor cell in such system is -3.5dB. This result agrees with our theoretical prediction that the quantum correlation in our scheme increases as the number of quantum modes increases. Our method also has the advantages of scalability and potential applications in producing multipartite quantum entangled images.

  14. Extreme Radiation Hardness and Space Qualification of AlGaN Optoelectronic Devices

    SciTech Connect

    Sun, Ke-Xun; Balakrishnan, Kathik; Hultgren, Eric; Goebel, John; Bilenko, Yuri; Yang, Jinwei; Sun, Wenhong; Shatalov, Max; Hu, Xuhong; Gaska, Remis

    2010-09-21

    Unprecedented radiation hardness and environment robustness are required in the new generation of high energy density physics (HEDP) experiments and deep space exploration. National Ignition Facility (NIF) break-even shots will have a neutron yield of 1015 or higher. The Europa Jupiter System Mission (EJSM) mission instruments will be irradiated with a total fluence of 1012 protons/cm2 during the space journey. In addition, large temperature variations and mechanical shocks are expected in these applications under extreme conditions. Hefty radiation and thermal shields are required for Si and GaAs based electronics and optoelectronics devices. However, for direct illumination and imaging applications, shielding is not a viable option. It is an urgent task to search for new semiconductor technologies and to develop radiation hard and environmentally robust optoelectronic devices. We will report on our latest systematic experimental studies on radiation hardness and space qualifications of AlGaN optoelectronic devices: Deep UV Light Emitting Diodes (DUV LEDs) and solarblind UV Photodiodes (PDs). For custom designed AlGaN DUV LEDs with a central emission wavelength of 255 nm, we have demonstrated its extreme radiation hardness up to 2x1012 protons/cm2 with 63.9 MeV proton beams. We have demonstrated an operation lifetime of over 26,000 hours in a nitrogen rich environment, and 23,000 hours of operation in vacuum without significant power drop and spectral shift. The DUV LEDs with multiple packaging styles have passed stringent space qualifications with 14 g random vibrations, and 21 cycles of 100K temperature cycles. The driving voltage, current, emission spectra and optical power (V-I-P) operation characteristics exhibited no significant changes after the space environmental tests. The DUV LEDs will be used for photoelectric charge management in space flights. For custom designed AlGaN UV photodiodes with a central response wavelength of 255 nm, we have demonstrated

  15. Coherent nanocavity structures for enhancement in internal quantum efficiency of III-nitride multiple quantum wells

    SciTech Connect

    Kim, T.; Liu, B.; Smith, R.; Athanasiou, M.; Gong, Y.; Wang, T.

    2014-04-21

    A “coherent” nanocavity structure has been designed on two-dimensional well-ordered InGaN/GaN nanodisk arrays with an emission wavelength in the green spectral region, leading to a massive enhancement in resonance mode in the green spectra region. By means of a cost-effective nanosphere lithography technique, we have fabricated such a structure on an InGaN/GaN multiple quantum well epiwafer and have observed the “coherent” nanocavity effect, which leads to an enhanced spontaneous emission (SE) rate. The enhanced SE rate has been confirmed by time resolved photoluminescence measurements. Due to the coherent nanocavity effect, we have achieved a massive improvement in internal quantum efficiency with a factor of 88, compared with the as-grown sample, which could be significant to bridge the “green gap” in solid-state lighting.

  16. Novel multiple quantum well modulators for optical interconnects

    NASA Astrophysics Data System (ADS)

    Krol, Mark F.; Boncek, Raymond K.; Hayduk, Michael J.; Ten, Sergey Y.; Ohtsuki, Tomoko; McGinnis, Brian P.; Khitrova, Galina; Gibbs, Hyatt M.; Peyghambarian, Nasser

    1995-02-01

    Novel multiple quantum well (MQW) optical modulators for use in time-division optical fiber interconnects are presented. A bit-error-rate analysis of a time-division receiver indicates high contrast ratio optical gates are required for high-speed interconnect applications. A high contrast MQW gate, consisting of a nonlinear asymmetric reflection modulator, suitable for use in optical time-division systems is presented which utilizes the GaAlInAs alloy lattice- matched to InP. This system is ideal for optical interconnect applications since MQW materials and devices are easily designed for operation in the optical fiber transmission windows of 1.3 and 1.5 micrometers . Utilizing asymmetric double quantum wells (ADQWs) as the nonlinear spacer for the asymmetric reflection modulator also is discussed. The recovery time of ADQWs can be tailored for interconnect applications by choosing the optimum width of the tunnel barrier. Electro-optic modulators which utilize real space transfer of electrons in ADQWs also are presented.

  17. Quantum teleportation scheme by selecting one of multiple output ports

    NASA Astrophysics Data System (ADS)

    Ishizaka, Satoshi; Hiroshima, Tohya

    2009-04-01

    The scheme of quantum teleportation, where Bob has multiple (N) output ports and obtains the teleported state by simply selecting one of the N ports, is thoroughly studied. We consider both the deterministic version and probabilistic version of the teleportation scheme aiming to teleport an unknown state of a qubit. Moreover, we consider two cases for each version: (i) the state employed for the teleportation is fixed to a maximally entangled state and (ii) the state is also optimized as well as Alice’s measurement. We analytically determine the optimal protocols for all the four cases and show the corresponding optimal fidelity or optimal success probability. All these protocols can achieve the perfect teleportation in the asymptotic limit of N→∞ . The entanglement properties of the teleportation scheme are also discussed.

  18. Multiple particle production processes in the light'' of quantum optics

    SciTech Connect

    Friedlander, E.M.

    1990-09-01

    Ever since the observation that high-energy nuclear active'' cosmic-ray particles create bunches of penetrating particles upon hitting targets, a controversy has raged about whether these secondaries are created in a single act'' or whether many hadrons are just the result of an intra-nuclear cascade, yielding one meson in every step. I cannot escape the impression that: the latter kind of model appeals naturally as a consequence of an innate bio-morphism in our way of thinking and that in one guise or another it has tenaciously survived to this day, also for hadron-hadron collisions, via multi-peripheral models to the modern parton shower approach. Indeed, from the very beginning of theoretical consideration of multiparticle production, the possibility of many particles arising from a single hot'' system has been explored, with many fruitful results, not the least of which are the s{sup 1/4} dependence of the mean produced particle multiplicity and the thermal'' shape of the P{sub T} spectra. An important consequence of the thermodynamical-hydrodynamical models is that particle emission is treated in analogy to black-body radiation, implying for the secondaries a set of specific Quantum-Statistical properties, very similar to those observed in quantum optics. From here on I shall try to review a number of implications and applications of this QS analogy in the study of multiplicity distributions of the produced secondaries. I will touch only in passing another very important topic of this class, the Bose-Einstein two-particle correlations.

  19. Ab initio multiple cloning algorithm for quantum nonadiabatic molecular dynamics

    SciTech Connect

    Makhov, Dmitry V.; Shalashilin, Dmitrii V.; Glover, William J.; Martinez, Todd J.

    2014-08-07

    We present a new algorithm for ab initio quantum nonadiabatic molecular dynamics that combines the best features of ab initio Multiple Spawning (AIMS) and Multiconfigurational Ehrenfest (MCE) methods. In this new method, ab initio multiple cloning (AIMC), the individual trajectory basis functions (TBFs) follow Ehrenfest equations of motion (as in MCE). However, the basis set is expanded (as in AIMS) when these TBFs become sufficiently mixed, preventing prolonged evolution on an averaged potential energy surface. We refer to the expansion of the basis set as “cloning,” in analogy to the “spawning” procedure in AIMS. This synthesis of AIMS and MCE allows us to leverage the benefits of mean-field evolution during periods of strong nonadiabatic coupling while simultaneously avoiding mean-field artifacts in Ehrenfest dynamics. We explore the use of time-displaced basis sets, “trains,” as a means of expanding the basis set for little cost. We also introduce a new bra-ket averaged Taylor expansion (BAT) to approximate the necessary potential energy and nonadiabatic coupling matrix elements. The BAT approximation avoids the necessity of computing electronic structure information at intermediate points between TBFs, as is usually done in saddle-point approximations used in AIMS. The efficiency of AIMC is demonstrated on the nonradiative decay of the first excited state of ethylene. The AIMC method has been implemented within the AIMS-MOLPRO package, which was extended to include Ehrenfest basis functions.

  20. Ab initio multiple cloning algorithm for quantum nonadiabatic molecular dynamics

    NASA Astrophysics Data System (ADS)

    Makhov, Dmitry V.; Glover, William J.; Martinez, Todd J.; Shalashilin, Dmitrii V.

    2014-08-01

    We present a new algorithm for ab initio quantum nonadiabatic molecular dynamics that combines the best features of ab initio Multiple Spawning (AIMS) and Multiconfigurational Ehrenfest (MCE) methods. In this new method, ab initio multiple cloning (AIMC), the individual trajectory basis functions (TBFs) follow Ehrenfest equations of motion (as in MCE). However, the basis set is expanded (as in AIMS) when these TBFs become sufficiently mixed, preventing prolonged evolution on an averaged potential energy surface. We refer to the expansion of the basis set as "cloning," in analogy to the "spawning" procedure in AIMS. This synthesis of AIMS and MCE allows us to leverage the benefits of mean-field evolution during periods of strong nonadiabatic coupling while simultaneously avoiding mean-field artifacts in Ehrenfest dynamics. We explore the use of time-displaced basis sets, "trains," as a means of expanding the basis set for little cost. We also introduce a new bra-ket averaged Taylor expansion (BAT) to approximate the necessary potential energy and nonadiabatic coupling matrix elements. The BAT approximation avoids the necessity of computing electronic structure information at intermediate points between TBFs, as is usually done in saddle-point approximations used in AIMS. The efficiency of AIMC is demonstrated on the nonradiative decay of the first excited state of ethylene. The AIMC method has been implemented within the AIMS-MOLPRO package, which was extended to include Ehrenfest basis functions.

  1. Ab initio multiple cloning algorithm for quantum nonadiabatic molecular dynamics.

    PubMed

    Makhov, Dmitry V; Glover, William J; Martinez, Todd J; Shalashilin, Dmitrii V

    2014-08-01

    We present a new algorithm for ab initio quantum nonadiabatic molecular dynamics that combines the best features of ab initio Multiple Spawning (AIMS) and Multiconfigurational Ehrenfest (MCE) methods. In this new method, ab initio multiple cloning (AIMC), the individual trajectory basis functions (TBFs) follow Ehrenfest equations of motion (as in MCE). However, the basis set is expanded (as in AIMS) when these TBFs become sufficiently mixed, preventing prolonged evolution on an averaged potential energy surface. We refer to the expansion of the basis set as "cloning," in analogy to the "spawning" procedure in AIMS. This synthesis of AIMS and MCE allows us to leverage the benefits of mean-field evolution during periods of strong nonadiabatic coupling while simultaneously avoiding mean-field artifacts in Ehrenfest dynamics. We explore the use of time-displaced basis sets, "trains," as a means of expanding the basis set for little cost. We also introduce a new bra-ket averaged Taylor expansion (BAT) to approximate the necessary potential energy and nonadiabatic coupling matrix elements. The BAT approximation avoids the necessity of computing electronic structure information at intermediate points between TBFs, as is usually done in saddle-point approximations used in AIMS. The efficiency of AIMC is demonstrated on the nonradiative decay of the first excited state of ethylene. The AIMC method has been implemented within the AIMS-MOLPRO package, which was extended to include Ehrenfest basis functions. PMID:25106573

  2. Experimental Generation of Multiple Quantum Correlated Beams from Hot Rubidium Vapor

    NASA Astrophysics Data System (ADS)

    Qin, Zhongzhong; Cao, Leiming; Wang, Hailong; Marino, A. M.; Zhang, Weiping; Jing, Jietai

    2014-07-01

    Quantum correlations and entanglement shared among multiple quantum modes are important for both fundamental science and the future development of quantum technologies. This development will also require an efficient quantum interface between multimode quantum light sources and atomic ensembles, which makes it necessary to implement multimode quantum light sources that match the atomic transitions. Here, we report on such a source that provides a method for generating quantum correlated beams that can be extended to a large number of modes by using multiple four-wave mixing (FWM) processes in hot rubidium vapor. Experimentally, we show that two cascaded FWM processes produce strong quantum correlations between three bright beams but not between any two of them. In addition, the intensity-difference squeezing is enhanced with the cascaded system to -7.0±0.1 dB from the -5.5±0.1/-4.5±0.1 dB squeezing obtained with only one FWM process. One of the main advantages of our system is that as the number of quantum modes increases, so does the total degree of quantum correlations. The proposed method is also immune to phase instabilities due to its phase insensitive nature, can easily be extended to multiple modes, and has potential applications in the production of multiple quantum correlated images.

  3. Comment on "Quantum Superimposing Multiple Anti-Cloning Machine"

    NASA Astrophysics Data System (ADS)

    Chang, Da-Wei

    2015-03-01

    Recently, Li et al. (Int. J. Theor. Phys. 46, 2599, 2007) has constructed the quantum superimposing multiple anti-cloning machine, moreover established the sufficient and necessary condition of this machine exists. In the proofs given by Li et al. (Int. J. Theor. Phys. 46, 2599, 2007), claimed that the following key fact to hold : Fact For an arbitrary unknown state | ψ> belongs to n-dimensional Hilbert space, there exists an antiunitary operator K such that K| ψ>=| ψ ⊥> here the state | ψ ⊥> is an orthogonal complement state of | ψ>, that is, it satisfies the following two conditions < ψ| K| ψ>=< ψ| ψ ⊥>=0 and < ψ| ψ>=< ψ ⊥| ψ ⊥>=1 In this Comment, we would like to point out that (a). In 1-dimensional Hilbert space, for an arbitrary unknown state | ψ>, the antiunitary operator K and the orthogonal complement state both do not exist in general. (b). In 3-dimensional Hilbert space, for an arbitrary unknown state | ψ>, the antiunitary operator K do not exist in general, there are uncountably many orthogonal complement states that can be constructed through the skew-symmetric operator, but is not unitary one. Which shows that above Fact given by Li et al. [1] is incorrect in general for both 1 and 3-dimensional Hilbert space

  4. Single-photon quantum router with multiple output ports.

    PubMed

    Yan, Wei-Bin; Fan, Heng

    2014-01-01

    The routing capability is a requisite in quantum network. Although the quantum routing of signals has been investigated in various systems both in theory and experiment, the general form of quantum routing with many output terminals still needs to be explored. Here we propose a scheme to achieve the multi-channel quantum routing of the single photons in a waveguide-emitter system. The channels are composed by the waveguides and are connected by intermediate two-level emitters. By adjusting the intermediate emitters, the output channels of the input single photons can be controlled. This is demonstrated in the cases of one output channel, two output channels and the generic N output channels. The results show that the multi-channel quantum routing of single photons can be well achieved in the proposed system. This offers a scheme for the experimental realization of general quantum routing of single photons. PMID:24769619

  5. Optimized multiple quantum MAS lineshape simulations in solid state NMR

    NASA Astrophysics Data System (ADS)

    Brouwer, William J.; Davis, Michael C.; Mueller, Karl T.

    2009-10-01

    The majority of nuclei available for study in solid state Nuclear Magnetic Resonance have half-integer spin I>1/2, with corresponding electric quadrupole moment. As such, they may couple with a surrounding electric field gradient. This effect introduces anisotropic line broadening to spectra, arising from distinct chemical species within polycrystalline solids. In Multiple Quantum Magic Angle Spinning (MQMAS) experiments, a second frequency dimension is created, devoid of quadrupolar anisotropy. As a result, the center of gravity of peaks in the high resolution dimension is a function of isotropic second order quadrupole and chemical shift alone. However, for complex materials, these parameters take on a stochastic nature due in turn to structural and chemical disorder. Lineshapes may still overlap in the isotropic dimension, complicating the task of assignment and interpretation. A distributed computational approach is presented here which permits simulation of the two-dimensional MQMAS spectrum, generated by random variates from model distributions of isotropic chemical and quadrupole shifts. Owing to the non-convex nature of the residual sum of squares (RSS) function between experimental and simulated spectra, simulated annealing is used to optimize the simulation parameters. In this manner, local chemical environments for disordered materials may be characterized, and via a re-sampling approach, error estimates for parameters produced. Program summaryProgram title: mqmasOPT Catalogue identifier: AEEC_v1_0 Program summary URL:http://cpc.cs.qub.ac.uk/summaries/AEEC_v1_0.html Program obtainable from: CPC Program Library, Queen's University, Belfast, N. Ireland Licensing provisions: Standard CPC licence, http://cpc.cs.qub.ac.uk/licence/licence.html No. of lines in distributed program, including test data, etc.: 3650 No. of bytes in distributed program, including test data, etc.: 73 853 Distribution format: tar.gz Programming language: C, OCTAVE Computer: UNIX

  6. Multiple-event probability in general-relativistic quantum mechanics

    SciTech Connect

    Hellmann, Frank; Mondragon, Mauricio; Perez, Alejandro; Rovelli, Carlo

    2007-04-15

    We discuss the definition of quantum probability in the context of 'timeless' general-relativistic quantum mechanics. In particular, we study the probability of sequences of events, or multievent probability. In conventional quantum mechanics this can be obtained by means of the 'wave function collapse' algorithm. We first point out certain difficulties of some natural definitions of multievent probability, including the conditional probability widely considered in the literature. We then observe that multievent probability can be reduced to single-event probability, by taking into account the quantum nature of the measuring apparatus. In fact, by exploiting the von-Neumann freedom of moving the quantum/classical boundary, one can always trade a sequence of noncommuting quantum measurements at different times, with an ensemble of simultaneous commuting measurements on the joint system+apparatus system. This observation permits a formulation of quantum theory based only on single-event probability, where the results of the wave function collapse algorithm can nevertheless be recovered. The discussion also bears on the nature of the quantum collapse.

  7. Storage of multiple single-photon pulses emitted from a quantum dot in a solid-state quantum memory

    PubMed Central

    Tang, Jian-Shun; Zhou, Zong-Quan; Wang, Yi-Tao; Li, Yu-Long; Liu, Xiao; Hua, Yi-Lin; Zou, Yang; Wang, Shuang; He, De-Yong; Chen, Geng; Sun, Yong-Nan; Yu, Ying; Li, Mi-Feng; Zha, Guo-Wei; Ni, Hai-Qiao; Niu, Zhi-Chuan; Li, Chuan-Feng; Guo, Guang-Can

    2015-01-01

    Quantum repeaters are critical components for distributing entanglement over long distances in presence of unavoidable optical losses during transmission. Stimulated by the Duan–Lukin–Cirac–Zoller protocol, many improved quantum repeater protocols based on quantum memories have been proposed, which commonly focus on the entanglement-distribution rate. Among these protocols, the elimination of multiple photons (or multiple photon-pairs) and the use of multimode quantum memory are demonstrated to have the ability to greatly improve the entanglement-distribution rate. Here, we demonstrate the storage of deterministic single photons emitted from a quantum dot in a polarization-maintaining solid-state quantum memory; in addition, multi-temporal-mode memory with 1, 20 and 100 narrow single-photon pulses is also demonstrated. Multi-photons are eliminated, and only one photon at most is contained in each pulse. Moreover, the solid-state properties of both sub-systems make this configuration more stable and easier to be scalable. Our work will be helpful in the construction of efficient quantum repeaters based on all-solid-state devices. PMID:26468996

  8. Excitation of multiple quantum transitions under magic angle spinning conditions: Adamantane

    NASA Astrophysics Data System (ADS)

    Meier, B. H.; Earl, William L.

    1986-11-01

    A pulse sequence designed for the excitation of multiple quantum transitions in magic angle spinning solid state NMR spectroscopy is presented. It is shown that under the action of the standard time-reversal pulse sequence, the change in the sign of the dipole coupling (which is used to generate the multiple quantum coherences) upon rotation causes the multiple quantum intensity to vanish after each rotor period. This effect is demonstrated both in calculations and in experimental 1H spectra of adamantane. A modification of the time-reversal pulse sequence, which involves switching the phase of the rf pulses every half-rotor period causes the spin part of the Hamiltonian to switch sign in synchrony with the modulation of the spacial part. This allows the creation of multiple quantum coherences in solids with magic angle spinning. The effectiveness of this pulse sequence is demonstrated through calculations and experiments.

  9. Excitation of multiple quantum transitions under magic angle spinning conditions: Adamantane

    SciTech Connect

    Meier, B.H.; Earl, W.L.

    1986-11-01

    A pulse sequence designed for the excitation of multiple quantum transitions in magic angle spinning solid state NMR spectroscopy is presented. It is shown that under the action of the standard time-reversal pulse sequence, the change in the sign of the dipole coupling (which is used to generate the multiple quantum coherences) upon rotation causes the multiple quantum intensity to vanish after each rotor period. This effect is demonstrated both in calculations and in experimental /sup 1/H spectra of adamantane. A modification of the time-reversal pulse sequence, which involves switching the phase of the rf pulses every half-rotor period causes the spin part of the Hamiltonian to switch sign in synchrony with the modulation of the spacial part. This allows the creation of multiple quantum coherences in solids with magic angle spinning. The effectiveness of this pulse sequence is demonstrated through calculations and experiments.

  10. Multiple-exciton generation in lead selenide nanorod solar cells with external quantum efficiencies exceeding 120%

    PubMed Central

    Davis, Nathaniel J. L. K.; Böhm, Marcus L.; Tabachnyk, Maxim; Wisnivesky-Rocca-Rivarola, Florencia; Jellicoe, Tom C.; Ducati, Caterina; Ehrler, Bruno; Greenham, Neil C.

    2015-01-01

    Multiple-exciton generation—a process in which multiple charge-carrier pairs are generated from a single optical excitation—is a promising way to improve the photocurrent in photovoltaic devices and offers the potential to break the Shockley–Queisser limit. One-dimensional nanostructures, for example nanorods, have been shown spectroscopically to display increased multiple exciton generation efficiencies compared with their zero-dimensional analogues. Here we present solar cells fabricated from PbSe nanorods of three different bandgaps. All three devices showed external quantum efficiencies exceeding 100% and we report a maximum external quantum efficiency of 122% for cells consisting of the smallest bandgap nanorods. We estimate internal quantum efficiencies to exceed 150% at relatively low energies compared with other multiple exciton generation systems, and this demonstrates the potential for substantial improvements in device performance due to multiple exciton generation. PMID:26411283

  11. Multiple-exciton generation in lead selenide nanorod solar cells with external quantum efficiencies exceeding 120.

    PubMed

    Davis, Nathaniel J L K; Böhm, Marcus L; Tabachnyk, Maxim; Wisnivesky-Rocca-Rivarola, Florencia; Jellicoe, Tom C; Ducati, Caterina; Ehrler, Bruno; Greenham, Neil C

    2015-01-01

    Multiple-exciton generation-a process in which multiple charge-carrier pairs are generated from a single optical excitation-is a promising way to improve the photocurrent in photovoltaic devices and offers the potential to break the Shockley-Queisser limit. One-dimensional nanostructures, for example nanorods, have been shown spectroscopically to display increased multiple exciton generation efficiencies compared with their zero-dimensional analogues. Here we present solar cells fabricated from PbSe nanorods of three different bandgaps. All three devices showed external quantum efficiencies exceeding 100% and we report a maximum external quantum efficiency of 122% for cells consisting of the smallest bandgap nanorods. We estimate internal quantum efficiencies to exceed 150% at relatively low energies compared with other multiple exciton generation systems, and this demonstrates the potential for substantial improvements in device performance due to multiple exciton generation. PMID:26411283

  12. Multiple surface plasmons in an unbounded quantum plasma half-space

    NASA Astrophysics Data System (ADS)

    Palade, D. I.

    2016-07-01

    The propagation of surface plasmons on a quantum plasma half-space in the absence of any external confinement is investigated. By means of the Quantum Hydrodynamic Model in the electrostatic limit, it is found that the equilibrium density profile is a smooth continuous function which, in the linear regime, supports multiple non-normal surface modes. Defining a spectrum function and using a cutting condition, the dispersion relations of these modes and their relevance for realistic dynamics are computed. It is found that the multiple surface plasmons present a significant red-shift with respect to the case of fully bounded quantum plasmas.

  13. Time Dependent Study of Multiple Exciton Generation in Nanocrystal Quantum Dots

    NASA Astrophysics Data System (ADS)

    Damtie, Fikeraddis A.; Wacker, Andreas

    2016-03-01

    We study the exciton dynamics in an optically excited nanocrystal quantum dot. Multiple exciton formation is more efficient in nanocrystal quantum dots compared to bulk semiconductors due to enhanced Coulomb interactions and the absence of conservation of momentum. The formation of multiple excitons is dependent on different excitation parameters and the dissipation. We study this process within a Lindblad quantum rate equation using the full many-particle states. We optically excite the system by creating a single high energy exciton ESX in resonance to a double exciton EDX. With Coulomb electron-electron interaction, the population can be transferred from the single exciton to the double exciton state by impact ionisation (inverse Auger process). The ratio between the recombination processes and the absorbed photons provide the yield of the structure. We observe a quantum yield of comparable value to experiment assuming typical experimental conditions for a 4 nm PbS quantum dot.

  14. Origin of energy dispersion in AlxGa1-xN/GaN nanowire quantum discs with low Al content

    NASA Astrophysics Data System (ADS)

    Rigutti, L.; Teubert, J.; Jacopin, G.; Fortuna, F.; Tchernycheva, M.; de Luna Bugallo, A.; Julien, F. H.; Furtmayr, F.; Stutzmann, M.; Eickhoff, M.

    2010-12-01

    Individual GaN nanowires containing AlxGa1-xN/GaN quantum discs (QDiscs) with Al content x≤16% have been investigated by microphotoluminescence, transmission electron microscopy, and theoretical modeling. Single quantum discs show narrow emission lines with a linewidth as low as 3 meV at energies above the GaN band gap while the emission of nanowires containing multiple quantum discs shows multiple peaks with total spectral broadening that depends on the Al content in the barrier. As assessed by simulations of the quantum confinement based on a three-dimensional effective-mass model, the main factors influencing the spectral dispersion are: (i) strain relaxation in the QDiscs, strongly affected by the presence of a lateral AlGaN shell with a progressively changing thickness formed during the barrier growth; (ii) monolayer fluctuations in the QDisc thickness.

  15. Dual Band Deep Ultraviolet AlGaN Photodetectors

    NASA Technical Reports Server (NTRS)

    Aslam, S.; Miko, L.; Stahle, C.; Franz, D.; Pugel, D.; Guan, B.; Zhang, J. P.; Gaska, R.

    2007-01-01

    We report on the design, fabrication and characterization of a back-illuminated voltage bias selectable dual-band AlGaN UV photodetector. The photodetector can separate UVA and W-B band radiation by bias switching a two terminal n-p-n homojunction structure that is fabricated in the same pixel. When a forward bias is applied between the top and bottom electrodes, the detector can sense UV-A and reject W-B band radiation. Alternatively, under reverse bias, the photodetector can sense UV-B and reject UV-A band radiation.

  16. Carrier multiplication detected through transient photocurrent in device-grade films of lead selenide quantum dots

    PubMed Central

    Gao, Jianbo; Fidler, Andrew F.; Klimov, Victor I.

    2015-01-01

    In carrier multiplication, the absorption of a single photon results in two or more electron–hole pairs. Quantum dots are promising materials for implementing carrier multiplication principles in real-life technologies. So far, however, most of research in this area has focused on optical studies of solution samples with yet to be proven relevance to practical devices. Here we report ultrafast electro-optical studies of device-grade films of electronically coupled quantum dots that allow us to observe multiplication directly in the photocurrent. Our studies help rationalize previous results from both optical spectroscopy and steady-state photocurrent measurements and also provide new insights into effects of electric field and ligand treatments on multiexciton yields. Importantly, we demonstrate that using appropriate chemical treatments of the films, extra charges produced by carrier multiplication can be extracted from the quantum dots before they are lost to Auger recombination and hence can contribute to photocurrent of practical devices. PMID:26345390

  17. Carrier multiplication detected through transient photocurrent in device-grade films of lead selenide quantum dots

    SciTech Connect

    Gao, Jianbo; Fidler, Andrew F.; Klimov, Victor I.

    2015-09-08

    In carrier multiplication, the absorption of a single photon results in two or more electron–hole pairs. Quantum dots are promising materials for implementing carrier multiplication principles in real-life technologies. So far, however, most of research in this area has focused on optical studies of solution samples with yet to be proven relevance to practical devices. We report ultra-fast electro-optical studies of device-grade films of electronically coupled quantum dots that allow us to observe multiplication directly in the photocurrent. Our studies help rationalize previous results from both optical spectroscopy and steady-state photocurrent measurements and also provide new insights into effects of electric field and ligand treatments on multiexciton yields. Importantly, we demonstrate that using appropriate chemical treatments of the films, extra charges produced by carrier multiplication can be extracted from the quantum dots before they are lost to Auger recombination and hence can contribute to photocurrent of practical devices.

  18. Exact non-Markovian master equations for multiple qubit systems: Quantum-trajectory approach

    NASA Astrophysics Data System (ADS)

    Chen, Yusui; You, J. Q.; Yu, Ting

    2014-11-01

    A wide class of exact master equations for a multiple qubit system can be explicitly constructed by using the corresponding exact non-Markovian quantum-state diffusion equations. These exact master equations arise naturally from the quantum decoherence dynamics of qubit system as a quantum memory coupled to a collective colored noisy source. The exact master equations are also important in optimal quantum control, quantum dissipation, and quantum thermodynamics. In this paper, we show that the exact non-Markovian master equation for a dissipative N -qubit system can be derived explicitly from the statistical average of the corresponding non-Markovian quantum trajectories. We illustrated our general formulation by an explicit construction of a three-qubit system coupled to a non-Markovian bosonic environment. This multiple qubit master equation offers an accurate time evolution of quantum systems in various domains, and paves the way to investigate the memory effect of an open system in a non-Markovian regime without any approximation.

  19. Quantum teleportation of multiple degrees of freedom of a single photon.

    PubMed

    Wang, Xi-Lin; Cai, Xin-Dong; Su, Zu-En; Chen, Ming-Cheng; Wu, Dian; Li, Li; Liu, Nai-Le; Lu, Chao-Yang; Pan, Jian-Wei

    2015-02-26

    Quantum teleportation provides a 'disembodied' way to transfer quantum states from one object to another at a distant location, assisted by previously shared entangled states and a classical communication channel. As well as being of fundamental interest, teleportation has been recognized as an important element in long-distance quantum communication, distributed quantum networks and measurement-based quantum computation. There have been numerous demonstrations of teleportation in different physical systems such as photons, atoms, ions, electrons and superconducting circuits. All the previous experiments were limited to the teleportation of one degree of freedom only. However, a single quantum particle can naturally possess various degrees of freedom--internal and external--and with coherent coupling among them. A fundamental open challenge is to teleport multiple degrees of freedom simultaneously, which is necessary to describe a quantum particle fully and, therefore, to teleport it intact. Here we demonstrate quantum teleportation of the composite quantum states of a single photon encoded in both spin and orbital angular momentum. We use photon pairs entangled in both degrees of freedom (that is, hyper-entangled) as the quantum channel for teleportation, and develop a method to project and discriminate hyper-entangled Bell states by exploiting probabilistic quantum non-demolition measurement, which can be extended to more degrees of freedom. We verify the teleportation for both spin-orbit product states and hybrid entangled states, and achieve a teleportation fidelity ranging from 0.57 to 0.68, above the classical limit. Our work is a step towards the teleportation of more complex quantum systems, and demonstrates an increase in our technical control of scalable quantum technologies. PMID:25719668

  20. Quantum teleportation of multiple degrees of freedom of a single photon

    NASA Astrophysics Data System (ADS)

    Wang, Xi-Lin; Cai, Xin-Dong; Su, Zu-En; Chen, Ming-Cheng; Wu, Dian; Li, Li; Liu, Nai-Le; Lu, Chao-Yang; Pan, Jian-Wei

    2015-02-01

    Quantum teleportation provides a `disembodied' way to transfer quantum states from one object to another at a distant location, assisted by previously shared entangled states and a classical communication channel. As well as being of fundamental interest, teleportation has been recognized as an important element in long-distance quantum communication, distributed quantum networks and measurement-based quantum computation. There have been numerous demonstrations of teleportation in different physical systems such as photons, atoms, ions, electrons and superconducting circuits. All the previous experiments were limited to the teleportation of one degree of freedom only. However, a single quantum particle can naturally possess various degrees of freedom--internal and external--and with coherent coupling among them. A fundamental open challenge is to teleport multiple degrees of freedom simultaneously, which is necessary to describe a quantum particle fully and, therefore, to teleport it intact. Here we demonstrate quantum teleportation of the composite quantum states of a single photon encoded in both spin and orbital angular momentum. We use photon pairs entangled in both degrees of freedom (that is, hyper-entangled) as the quantum channel for teleportation, and develop a method to project and discriminate hyper-entangled Bell states by exploiting probabilistic quantum non-demolition measurement, which can be extended to more degrees of freedom. We verify the teleportation for both spin-orbit product states and hybrid entangled states, and achieve a teleportation fidelity ranging from 0.57 to 0.68, above the classical limit. Our work is a step towards the teleportation of more complex quantum systems, and demonstrates an increase in our technical control of scalable quantum technologies.

  1. Optimized In composition and quantum well thickness for yellow-emitting (Ga,In)N/GaN multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Lekhal, Kaddour; Hussain, Sakhawat; De Mierry, Philippe; Vennéguès, Philippe; Nemoz, Maud; Chauveau, Jean-Michel; Damilano, Benjamin

    2016-01-01

    Yellow-emitting InxGa1-xN/GaN multiple quantum wells (MQWs) with different pairs of In composition and QW thickness have been grown by metal-organic chemical vapor deposition on sapphire substrates. We show that a trade-off between the MQW crystalline quality and the quantum confined Stark effect has to be found to maximize the room temperature photoluminescence efficiency. With our growth conditions, an optimum design of the MQW is obtained for x=0.21 and a QW thickness of 3.6 nm.

  2. Nonadditivity of quantum and classical capacities for entanglement breaking multiple-access channels and the butterfly network

    SciTech Connect

    Grudka, Andrzej; Horodecki, Pawel

    2010-06-15

    We analyze quantum network primitives which are entanglement breaking. We show superadditivity of quantum and classical capacity regions for quantum multiple-access channels and the quantum butterfly network. Since the effects are especially visible at high noise they suggest that quantum information effects may be particularly helpful in the case of the networks with occasional high noise rates. The present effects provide a qualitative borderline between superadditivities of bipartite and multipartite systems.

  3. Physically feasible three-level transitionless quantum driving with multiple Schrödinger dynamics

    NASA Astrophysics Data System (ADS)

    Song, Xue-Ke; Ai, Qing; Qiu, Jing; Deng, Fu-Guo

    2016-05-01

    Three-level quantum systems, which possess some unique characteristics beyond two-level ones, such as electromagnetically induced transparency, coherent trapping, and Raman scatting, play important roles in solid-state quantum information processing. Here, we introduce an approach to implement the physically feasible three-level transitionless quantum driving with multiple Schrödinger dynamics (MSDs). It can be used to control accurately population transfer and entanglement generation for three-level quantum systems in a nonadiabatic way. Moreover, we propose an experimentally realizable hybrid architecture, based on two nitrogen-vacancy-center ensembles coupled to a transmission line resonator, to realize our transitionless scheme which requires fewer physical resources and simple procedures, and it is more robust against environmental noises and control parameter variations than conventional adiabatic passage techniques. All these features inspire the further application of MSDs on robust quantum information processing in experiment.

  4. High charge-carrier mobility enables exploitation of carrier multiplication in quantum-dot films

    PubMed Central

    Sandeep, C. S. Suchand; Cate, Sybren ten; Schins, Juleon M.; Savenije, Tom J.; Liu, Yao; Law, Matt; Kinge, Sachin; Houtepen, Arjan J.; Siebbeles, Laurens D. A.

    2013-01-01

    Carrier multiplication, the generation of multiple electron–hole pairs by a single photon, is of great interest for solar cells as it may enhance their photocurrent. This process has been shown to occur efficiently in colloidal quantum dots, however, harvesting of the generated multiple charges has proved difficult. Here we show that by tuning the charge-carrier mobility in quantum-dot films, carrier multiplication can be optimized and may show an efficiency as high as in colloidal dispersion. Our results are explained quantitatively by the competition between dissociation of multiple electron–hole pairs and Auger recombination. Above a mobility of ~1 cm2 V−1 s−1, all charges escape Auger recombination and are quantitatively converted to free charges, offering the prospect of cheap quantum-dot solar cells with efficiencies in excess of the Shockley–Queisser limit. In addition, we show that the threshold energy for carrier multiplication is reduced to twice the band gap of the quantum dots. PMID:23974282

  5. MBE grown GaAsBi/GaAs multiple quantum well structures: Structural and optical characterization

    NASA Astrophysics Data System (ADS)

    Richards, Robert D.; Bastiman, Faebian; Roberts, John S.; Beanland, Richard; Walker, David; David, John P. R.

    2015-09-01

    A series of GaAsBi/GaAs multiple quantum well p-i-n diodes were grown by molecular beam epitaxy. Nomarski images showed evidence of sub-surface damage in each diode, with an increase in the cross-hatching associated with strain relaxation for the diodes containing more than 40 quantum wells. X-ray diffraction ω-2θ scans of the (004) reflections showed that multiple quantum well regions with clearly defined well periodicities were grown. The superlattice peaks of the diodes containing more than 40 wells were much broader than those of the other diodes. The photoluminescence spectra showed a redshift of 56 meV and an attenuation of nearly two orders of magnitude for the 54 and 63 well diodes. Calculations of the quantum confinement and strain induced band gap modifications suggest that the wells in all diodes are thinner than their intended widths and that both loss of quantum confinement and strain probably contributed to the observed redshift and attenuation in the 54 and 63 well diodes. Comparison of this data with that gathered for InGaAs/GaAs multiple quantum wells, suggests that the onset of relaxation occurs at a similar average strain-thickness product for both systems. Given the rapid band gap reduction of GaAsBi with Bi incorporation, this data suggests that GaAsBi is a promising photovoltaic material candidate.

  6. A one-dimensional quantum walk with multiple-rotation on the coin

    PubMed Central

    Xue, Peng; Zhang, Rong; Qin, Hao; Zhan, Xiang; Bian, Zhihao; Li, Jian

    2016-01-01

    We introduce and analyze a one-dimensional quantum walk with two time-independent rotations on the coin. We study the influence on the property of quantum walk due to the second rotation on the coin. Based on the asymptotic solution in the long time limit, a ballistic behaviour of this walk is observed. This quantum walk retains the quadratic growth of the variance if the combined operator of the coin rotations is unitary. That confirms no localization exhibits in this walk. This result can be extended to the walk with multiple time-independent rotations on the coin. PMID:26822563

  7. Quantum superadditivity in linear optics networks: Sending bits via multiple-access Gaussian channels

    SciTech Connect

    Czekaj, L.; Horodecki, P.; Korbicz, J. K.; Chhajlany, R. W.

    2010-08-15

    Superadditivity effects of communication capacities are known in the case of discrete variable quantum channels. We describe the continuous variable analog of one of these effects in the framework of Gaussian multiple access channels (MACs). Classically, superadditivity-type effects are strongly restricted: For example, adding resources to one sender is never advantageous to other senders in sending their respective information to the receiver. We show that this rule can be surpassed using quantum resources, giving rise to a type of truly quantum superadditivity. This is illustrated here for two examples of experimentally feasible Gaussian MACs.

  8. Multiple quantum filtering and spin exchange in solid state nuclear magnetic resonance

    NASA Astrophysics Data System (ADS)

    Ba, Yong; Ripmeester, John A.

    1998-05-01

    Multiple quantum NMR of coupled spin-1/2 nuclei in a solid has been exploited as a filter to separate different magnetization components in a spatially heterogeneous system. After filtering, the spins labeled according to coherence orders were used to follow the track of spin exchange between different domains. In order to avoid time-consuming two-dimensional experiments, this exchange was detected in a one-dimensional experiment via selective detection of multiple quantum coherences. The technique was demonstrated for samples of solid adamantane in contact with its saturated solution in benzene-d6 and for a high-density polyoxymethylene.

  9. Controlled quantum perfect teleportation of multiple arbitrary multi-qubit states

    NASA Astrophysics Data System (ADS)

    Shi, Runhua; Huang, Liusheng; Yang, Wei; Zhong, Hong

    2011-12-01

    We present an efficient controlled quantum perfect teleportation scheme. In our scheme, multiple senders can teleport multiple arbitrary unknown multi-qubit states to a single receiver via a previously shared entanglement state with the help of one or more controllers. Furthermore, our scheme has a very good performance in the measurement and operation complexity, since it only needs to perform Bell state and single-particle measurements and to apply Controlled-Not gate and other single-particle unitary operations. In addition, compared with traditional schemes, our scheme needs less qubits as the quantum resources and exchanges less classical information, and thus obtains higher communication efficiency.

  10. Optimization schemes for efficient multiple exciton generation and extraction in colloidal quantum dots

    NASA Astrophysics Data System (ADS)

    Damtie, Fikeraddis A.; Karki, Khadga J.; Pullerits, Tõnu; Wacker, Andreas

    2016-08-01

    Multiple exciton generation (MEG) is a process in which more than one electron hole pair is generated per absorbed photon. It allows us to increase the efficiency of solar energy harvesting. Experimental studies have shown the multiple exciton generation yield of 1.2 in isolated colloidal quantum dots. However real photoelectric devices require the extraction of electron hole pairs to electric contacts. We provide a systematic study of the corresponding quantum coherent processes including extraction and injection and show that a proper design of extraction and injection rates enhances the yield significantly up to values around 1.6.

  11. Surface Passivation by Quantum Exclusion Using Multiple Layers

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E. (Inventor)

    2013-01-01

    A semiconductor device has a multilayer doping to provide improved passivation by quantum exclusion. The multilayer doping includes a plurality M of doped layers, where M is an integer greater than 1. The dopant sheet densities in the M doped layers need not be the same, but in principle can be selected to be the same sheet densities or to be different sheet densities. M-1 interleaved layers provided between the M doped layers are not deliberately doped (also referred to as "undoped layers"). Structures with M=2, M=3 and M=4 have been demonstrated and exhibit improved passivation.

  12. Reliability assessment of multiple quantum well avalanche photodiodes

    NASA Technical Reports Server (NTRS)

    Yun, Ilgu; Menkara, Hicham M.; Wang, Yang; Oguzman, Isamil H.; Kolnik, Jan; Brennan, Kevin F.; May, Gray S.; Wagner, Brent K.; Summers, Christopher J.

    1995-01-01

    The reliability of doped-barrier AlGaAs/GsAs multi-quantum well avalanche photodiodes fabricated by molecular beam epitaxy is investigated via accelerated life tests. Dark current and breakdown voltage were the parameters monitored. The activation energy of the degradation mechanism and median device lifetime were determined. Device failure probability as a function of time was computed using the lognormal model. Analysis using the electron beam induced current method revealed the degradation to be caused by ionic impurities or contamination in the passivation layer.

  13. Entanglement distribution over quantum code-division multiple-access networks

    NASA Astrophysics Data System (ADS)

    Zhu, Chang-long; Yang, Nan; Liu, Yu-xi; Nori, Franco; Zhang, Jing

    2015-10-01

    We present a method for quantum entanglement distribution over a so-called code-division multiple-access network, in which two pairs of users share the same quantum channel to transmit information. The main idea of this method is to use different broadband chaotic phase shifts, generated by electro-optic modulators and chaotic Colpitts circuits, to encode the information-bearing quantum signals coming from different users and then recover the masked quantum signals at the receiver side by imposing opposite chaotic phase shifts. The chaotic phase shifts given to different pairs of users are almost uncorrelated due to the randomness of chaos and thus the quantum signals from different pair of users can be distinguished even when they are sent via the same quantum channel. It is shown that two maximally entangled states can be generated between two pairs of users by our method mediated by bright coherent lights, which can be more easily implemented in experiments compared with single-photon lights. Our method is robust under the channel noises if only the decay rates of the information-bearing fields induced by the channel noises are not quite high. Our study opens up new perspectives for addressing and transmitting quantum information in future quantum networks.

  14. Simultaneous nano-tracking of multiple motor proteins via spectral discrimination of quantum dots

    PubMed Central

    Kakizuka, Taishi; Ikezaki, Keigo; Kaneshiro, Junichi; Fujita, Hideaki; Watanabe, Tomonobu M.; Ichimura, Taro

    2016-01-01

    Simultaneous nanometric tracking of multiple motor proteins was achieved by combining multicolor fluorescent labeling of target proteins and imaging spectroscopy, revealing dynamic behaviors of multiple motor proteins at the sub-diffraction-limit scale. Using quantum dot probes of distinct colors, we experimentally verified the localization precision to be a few nanometers at temporal resolution of 30 ms or faster. One-dimensional processive movement of two heads of a single myosin molecule and multiple myosin molecules was successfully traced. Furthermore, the system was modified for two-dimensional measurement and applied to tracking of multiple myosin molecules. Our approach is useful for investigating cooperative movement of proteins in supramolecular nanomachinery. PMID:27446684

  15. Simultaneous nano-tracking of multiple motor proteins via spectral discrimination of quantum dots.

    PubMed

    Kakizuka, Taishi; Ikezaki, Keigo; Kaneshiro, Junichi; Fujita, Hideaki; Watanabe, Tomonobu M; Ichimura, Taro

    2016-07-01

    Simultaneous nanometric tracking of multiple motor proteins was achieved by combining multicolor fluorescent labeling of target proteins and imaging spectroscopy, revealing dynamic behaviors of multiple motor proteins at the sub-diffraction-limit scale. Using quantum dot probes of distinct colors, we experimentally verified the localization precision to be a few nanometers at temporal resolution of 30 ms or faster. One-dimensional processive movement of two heads of a single myosin molecule and multiple myosin molecules was successfully traced. Furthermore, the system was modified for two-dimensional measurement and applied to tracking of multiple myosin molecules. Our approach is useful for investigating cooperative movement of proteins in supramolecular nanomachinery. PMID:27446684

  16. All AlGaN epitaxial structure solar-blind avalanche photodiodes with high efficiency and high gain

    NASA Astrophysics Data System (ADS)

    Wu, Hualong; Wu, Weicong; Zhang, Hongxian; Chen, Yingda; Wu, Zhisheng; Wang, Gang; Jiang, Hao

    2016-05-01

    Solar-blind avalanche photodiodes were fabricated with an all AlGaN-based epitaxial structure on sapphire by metal–organic chemical vapor deposition. The devices demonstrate a maximum responsivity of 114.1 mA/W at 278 nm and zero bias, corresponding to an external quantum efficiency (EQE) of 52.7%. The EQE improves to 64.8% under a bias of ‑10 V. Avalanche gain higher than 2 × 104 was obtained at a bias of ‑140 V. The high performance is attributed to the all AlGaN-based p–i–n structure comprised of undoped and Si-doped n-type Al0.4Ga0.6N on a high quality AlN layer and highly conductive p-type AlGaN grown with In-surfactant-assisted Mg-delta doping.

  17. Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers

    NASA Astrophysics Data System (ADS)

    Podlipskas, Ž.; Aleksiejūnas, R.; Kadys, A.; Mickevičius, J.; Jurkevičius, J.; Tamulaitis, G.; Shur, M.; Shatalov, M.; Yang, J.; Gaska, R.

    2016-04-01

    Dynamics of radiative and nonradiative recombination of non-equilibrium carriers is investigated in thick AlGaN epitaxial layers with Al content ranging from 0.11 to 0.71. The internal quantum efficiency (IQE) in the epilayers was obtained using two approaches: either estimated from PL measurements or calculated using the recombination coefficients of a simple ABC model, retrieved by fitting the kinetics of light induced transient gratings (LITG). At photoexcited carrier densities below ~1019 cm-3, both approaches provided similar IQE values indicating that the simple ABC model is applicable to analyze carrier recombination at such carrier densities. The increase in IQE at higher carrier densities slowed down for the values extracted from PL considerably faster than for those obtained from LITG transients. This discrepancy is explained in terms of the mixed nature of the rate coefficient B caused by the onset of the density-activated nonradiative recombination at high carrier densities.

  18. Improved efficiency of near-ultraviolet LEDs using a novel p-type AlGaN hole injection layer

    NASA Astrophysics Data System (ADS)

    Xu, Mingsheng; Zhou, Quanbin; Zhang, Heng; Wang, Hong; Zhang, Xichun

    2016-06-01

    We investigate a novel near-ultraviolet light-emitting diode (NUV-LED) with a p-type AlGaN (pAlGaN) hole injection layer to replace the conventional p-type GaN layer. The optical properties are studied numerically with simulations. Our calculated results indicate that a pAlGaN layer can significantly improve both light output power and internal quantum efficiency of a NUV-LED. The light power of NUV-LED with constant and gradually increasing Al content of the pAlGaN layer increases by 215% and 266% compared to a conventional LED. We also find that the elimination of the interface barrier and suppression of the polarization field are the key factors that lead to the improved NUV-LED performance.

  19. Composition dependent valence band order in c-oriented wurtzite AlGaN layers

    SciTech Connect

    Neuschl, B. Helbing, J.; Knab, M.; Lauer, H.; Madel, M.; Thonke, K.; Feneberg, M.

    2014-09-21

    The valence band order of polar wurtzite aluminum gallium nitride (AlGaN) layers is analyzed for a dense series of samples, grown heteroepitaxially on sapphire substrates, covering the complete composition range. The excitonic transition energies, found by temperature dependent photoluminescence (PL) spectroscopy, were corrected to the unstrained state using input from X-ray diffraction. k∙p theory yields a critical relative aluminum concentration x{sub c}=(0.09±0.05) for the crossing of the uppermost two valence bands for strain free material, shifting to higher values for compressively strained samples, as supported by polarization dependent PL. The analysis of the strain dependent valence band crossing reconciles the findings of other research groups, where sample strain was neglected. We found a bowing for the energy band gap to the valence band with Γ₉ symmetry of b{sub Γ₉}=0.85eV, and propose a possible bowing for the crystal field energy of b{sub cf}=-0.12eV. A comparison of the light extraction efficiency perpendicular and parallel to the c axis of Al{sub x}Ga{sub 1-x}N/Al{sub y}Ga{sub 1-y}N quantum well structures is discussed for different compositions.

  20. Monitoring and Controlling of Strain During MOCVD of AlGaN for UV Optoelectronics

    SciTech Connect

    Han, J.; Crawford, M.H.; Shul, R.J.; Hearne, S.J.; Chason, E.; Figiel, J.J.; Banas, M.

    1999-01-14

    The grown-in tensile strain, due to a lattice mismatch between AlGaN and GaN, is responsible for the observed cracking that seriously limits the feasibility of nitride-based ultraviolet (UV) emitters. We report in-situ monitoring of strain/stress during MOCVD of AlGaN based on a wafer-curvature measurement technique. The strain/stress measurement confirms the presence of tensile strain during growth of AlGaN pseudomorphically on a thick GaN layer. Further growth leads to the onset of stress relief through crack generation. We find that the growth of AlGaN directly on low-temperature (LT) GaN or AlN buffer layers results in a reduced and possibly controllable strain.

  1. Surface Passivation by Quantum Exclusion Using Multiple Layers

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E. (Inventor)

    2015-01-01

    A semiconductor device has a multilayer doping to provide improved passivation by quantum exclusion. The multilayer doping includes at least two doped layers fabricated using MBE methods. The dopant sheet densities in the doped layers need not be the same, but in principle can be selected to be the same sheet densities or to be different sheet densities. The electrically active dopant sheet densities are quite high, reaching more than 1.times.10.sup.14 cm.sup.-2, and locally exceeding 10.sup.22 per cubic centimeter. It has been found that silicon detector devices that have two or more such dopant layers exhibit improved resistance to degradation by UV radiation, at least at wavelengths of 193 nm, as compared to conventional silicon p-on-n devices.

  2. Ballistic effects and intersubband excitations in multiple quantum well structures

    NASA Astrophysics Data System (ADS)

    Schneider, H.; Schönbein, C.; Schwarz, K.; Walther, M.

    1998-07-01

    We have studied the transport properties of electrons in asymmetric quantum well structures upon far-infrared optical excitation of carriers from the lowest subband into the continuum. Here the photocurrent consists of a coherent component originating from ballistic transport upon excitation, and of an incoherent part associated with asymmetric diffusion and relaxation processes, which occur after the coherence has been lost. The signature of the coherent contribution is provided by a sign reversal of the photocurrent upon changing the excitation energy. This sign reversal arises from the energy-dependent interference between continuum states, which have a twofold degeneracy characterized by positive and negative momenta. The interference effect also allows us to estimate the coherent mean free path ( >20 nm at 77K). In specifically designed device structures, we use both the coherent and incoherent components in order to achieve a pronounced photovoltaic infrared response for detector applications.

  3. Equivalent Circuit of a Heterostructure with Multiple Quantum Wells

    NASA Astrophysics Data System (ADS)

    Davydov, V. N.; Novikov, D. A.

    2015-11-01

    Based on the consideration of physical processes in a heterostructure with quantum wells (QW), its equivalent circuit is constructed including a barrier capacitance and a differential resistance of the p-n junction, capacitance and resistance of charge relaxation in QW, and resistance of free charge carrier delivery to QW. Analytical expressions for the equivalent capacity and equivalent resistance of the heterostructure for a serial substitution circuit are derived, and behavior of the equivalent parameters attendant to changes of the test signal frequency is analyzed. Results of experimental investigation of the capacitive and resistive properties of the heterostructures with QW based on the InGaN/GaN barriers confirm the calculated dependences of their equivalent parameters and demonstrate their dependence on the special features of the kinetic properties of the heterostructures.

  4. Precision control of multiple quantum cascade lasers for calibration systems

    NASA Astrophysics Data System (ADS)

    Taubman, Matthew S.; Myers, Tanya L.; Pratt, Richard M.; Stahl, Robert D.; Cannon, Bret D.

    2014-01-01

    We present a precision, 1-A, digitally interfaced current controller for quantum cascade lasers, with demonstrated temperature coefficients for continuous and 40-kHz full-depth square-wave modulated operation, of 1-2 ppm/ °C and 15 ppm/ °C, respectively. High precision digital to analog converters (DACs) together with an ultra-precision voltage reference produce highly stable, precision voltages, which are selected by a multiplexer (MUX) chip to set output currents via a linear current regulator. The controller is operated in conjunction with a power multiplexing unit, allowing one of three lasers to be driven by the controller, while ensuring protection of controller and all lasers during operation, standby, and switching. Simple ASCII commands sent over a USB connection to a microprocessor located in the current controller operate both the controller (via the DACs and MUX chip) and the power multiplexer.

  5. Precision control of multiple quantum cascade lasers for calibration systems

    SciTech Connect

    Taubman, Matthew S. Myers, Tanya L.; Pratt, Richard M.; Stahl, Robert D.; Cannon, Bret D.

    2014-01-15

    We present a precision, 1-A, digitally interfaced current controller for quantum cascade lasers, with demonstrated temperature coefficients for continuous and 40-kHz full-depth square-wave modulated operation, of 1–2 ppm/ °C and 15 ppm/ °C, respectively. High precision digital to analog converters (DACs) together with an ultra-precision voltage reference produce highly stable, precision voltages, which are selected by a multiplexer (MUX) chip to set output currents via a linear current regulator. The controller is operated in conjunction with a power multiplexing unit, allowing one of three lasers to be driven by the controller, while ensuring protection of controller and all lasers during operation, standby, and switching. Simple ASCII commands sent over a USB connection to a microprocessor located in the current controller operate both the controller (via the DACs and MUX chip) and the power multiplexer.

  6. Precision Control of Multiple Quantum Cascade Lasers for Calibration Systems

    SciTech Connect

    Taubman, Matthew S.; Myers, Tanya L.; Pratt, Richard M.; Stahl, Robert D.; Cannon, Bret D.

    2014-01-15

    We present a precision, digitally interfaced current controller for quantum cascade lasers, with demonstrated DC and modulated temperature coefficients of 1- 2 ppm/ºC and 15 ppm/ºC respectively. High linearity digital to analog converters (DACs) together with an ultra-precision voltage reference, produce highly stable, precision voltages. These are in turn selected by a low charge-injection multiplexer (MUX) chip, which are then used to set output currents via a linear current regulator. The controller is operated in conjunction with a power multiplexing unit, allowing one of three lasers to be driven by the controller while ensuring protection of controller and all lasers during operation, standby and switching. Simple ASCII commands sent over a USB connection to a microprocessor located in the current controller operate both the controller (via the DACs and MUX chip) and the power multiplexer.

  7. MOCVD growth of AlGaN UV LEDs

    SciTech Connect

    Han, J.; Crawford, M.H.

    1998-09-01

    Issues related to the MOCVD growth of AlGaN, specifically the gas-phase parasitic reactions among TMG, TMA, and NH{sub 3}, are studied using an in-situ optical reflectometer. It is observed that the presence of the well-known gas phase adduct (TMA: NH{sub 3}) could seriously hinder the incorporation behavior of TMGa. Relatively low reactor pressures (30--50 Torr) are employed to grow an AlGaN/GaN SCH QW p-n diode structure. The UV emission at 360 nm (FWHM {approximately} 10 nm) represents the first report of LED operation from an indium-free GaN QW diode.

  8. The set of triple-resonance sequences with a multiple quantum coherence evolution period

    NASA Astrophysics Data System (ADS)

    Koźmiński, Wiktor; Zhukov, Igor

    2004-12-01

    The new pulse sequence building block that relies on evolution of heteronuclear multiple quantum coherences is proposed. The particular chemical shifts are obtained in multiple quadrature, using linear combinations of frequencies taken from spectra measured at different quantum levels. The pulse sequences designed in this way consist of small number of RF-pulses, are as short as possible, and could be applied for determination of coupling constants. The examples presented involve 2D correlations H NCO, H NCA, H N(CO) CA, and H(N) COCA via heteronuclear zero and double coherences, as well as 2D H NCOCA technique with simultaneous evolution of triple and three distinct single quantum coherences. Applications of the new sequences are presented for 13C, 15N-labeled ubiquitin.

  9. Intersubband Transition in GaN/InGaN Multiple Quantum Wells

    PubMed Central

    Chen, G.; Wang, X. Q.; Rong, X.; Wang, P.; Xu, F. J.; Tang, N.; Qin, Z. X.; Chen, Y. H.; Shen, B.

    2015-01-01

    Utilizing the growth temperature controlled epitaxy, high quality GaN/In0.15Ga0.85N multiple quantum wells designed for intersubband transition (ISBT) as novel candidates in III-nitride infrared device applications have been experimentally realized for the first time. Photo-absorption originated from the ISBT has been successfully observed at infrared regime covering the 3–5 μm atmosphere window, where the central absorption wavelength is modulated by adjusting the quantum well width. With increasing the quantum well thickness, the ISBT center wave length blue shifts at thickness less than 2.8 nm and then redshifts with further increase of the well thickness. The non-monotonic trend is most likely due to the polarization induced asymmetric shape of the quantum wells. PMID:26089133

  10. Quantum correlations of magnetic impurities by a multiple electron scattering in carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Gamboa Angulo, Didier; Cordourier Maruri, Guillermo; de Coss Gómez, Romeo

    In this work we analyze the quantum correlations and polarizations states of magnetic impurities spins, when a multiple electron scattering was taken place. A sequence of non-correlated electrons interacts through scattering producing quantum correlation which will have an impact on the electronic transmission. We consider a short range Heisenberg interaction between ballistic electron and static impurities. We analyze the cases when the electron scattering is produce by one and two impurities, obtaining the electronic transmission rates. Concurrence and fidelity calculations are performed to obtain the level of quantum entanglement and polarization correlations. We also discuss the possible application of this model to metallic and semiconductor carbon nanotubes, which could have important implications on spintronics and quantum information devices.

  11. Ultrafast switching characteristics of a bistable surface-emitting multiple quantum well distributed Bragg reflector laser

    SciTech Connect

    Kojima, K.; Kyuma, K.; Noda, S.; Ohta, J.; Hamanaka, K.

    1988-03-21

    We describe an ultrafast switching operation of a bistable surface-emitting distributed Bragg reflector laser. The rise time was as small as 12 ps and the fall time was 90 ps. Both are much smaller than those of conventional bistable laser diodes. Ths was realized by the effect of the multiple quantum well structure and a strong detuning.

  12. Low-dimensional CdS/CdTe multiple-quantum well heterostructure for optical refrigeration

    NASA Astrophysics Data System (ADS)

    Tarín-Cordero, Julio C.; Villa-Angulo, Rafael; Villa-Angulo, José R.; Villa-Angulo, Carlos

    2015-01-01

    The major challenge for semiconductors to achieve temperatures below 10 K by luminescence upconversion, is that at these lattice temperatures the acoustic phonon component dominates and the scattering rate becomes comparable to the band-to-band radiative transition rate. This problem can be significantly alleviated by employing quantum-confined systems, where relaxation of wave-vector conservation in the confined direction reduces material conductivity by nearly three orders of magnitude. Although previous studies have reported theoretical and experimental analyses of cooling characteristics for bulk semiconductors, the electron band-to-band transition due to photon absorption or photon emission under cooling conditions in quantum-confined semiconductor systems which exhibit quantum effects at the dimensions of several nanometers have not been completely analyzed in conventional theoretical studies. We realized a numerical investigation of optical cooling conditions for a low-dimensional CdS/CdTe multiple-quantum well heterostructure where injected carriers in the active region are quantum mechanically confined in one dimension. Effects of such quantum mechanically confined carriers on photon absorption and photoluminescence (PL) were analyzed under cooling conditions. Most importantly, the CdS/CdTe heterostructure absorption and PL spectra for cooling conditions were defined in terms of the active layer width and number of quantum wells in the complete heterostructure.

  13. Collective cavity quantum electrodynamics with multiple atomic levels

    SciTech Connect

    Arnold, Kyle J.; Baden, Markus P.; Barrett, Murray D.

    2011-09-15

    We study the transmission spectra of ultracold rubidium atoms coupled to a high-finesse optical cavity. Under weak probing with {pi}-polarized light, the linear response of the system is that of a collective spin with multiple levels coupled to a single mode of the cavity. By varying the atom number, we change the collective coupling of the system. We observe the change in transmission spectra when going from a regime where the collective coupling is much smaller than the separation of the atomic levels to a regime where both are of comparable size. The observations are in good agreement with a reduced model we developed for our system.

  14. Measurements of 13C multiple-quantum coherences in amyloid fibrils under magic-angle spinning.

    PubMed

    Chou, Fang-Chieh; Tsai, Tim W T; Cheng, Hsin-Mei; Chan, Jerry C C

    2012-06-21

    The excitation and detection of high-order multiple quantum coherences among (13)C nuclear spins are demonstrated in the samples of [1-(13)C]-L-alanine and (13)C labeled amyloid fibrils at a spinning frequency of 20 kHz. The technique is based on the double-quantum average Hamiltonian prepared by the DRAMA-XY4 pulse sequence. Empirically, we find that multiple supercycles are required to suppress the higher-order effects for real applications. Measurements for the fibril samples formed by the polypeptides of PrP(113-127) provide the first solid-state NMR evidence for the stacking of multiple β-sheet layers at the structural core of amyloid fibrils. PMID:22632418

  15. Manipulation of nanoscale V-pits to optimize internal quantum efficiency of InGaN multiple quantum wells

    SciTech Connect

    Chang, Chiao-Yun; Li, Heng; Shih, Yang-Ta; Lu, Tien-Chang

    2015-03-02

    We systematically investigated the influence of nanoscale V-pits on the internal quantum efficiency (IQE) of InGaN multiple quantum wells (MQWs) by adjusting the underlying superlattices (SLS). The analysis indicated that high barrier energy of sidewall MQWs on V-pits and long diffusion distance between the threading dislocation (TD) center and V-pit boundary were crucial to effectively passivate the non-radiative centers of TDs. For a larger V-pit, the thicker sidewall MQW on V-pit would decrease the barrier energy. On the contrary, a shorter distance between the TD center and V-pit boundary would be observed in a smaller V-pit, which could increase the carrier capturing capability of TDs. An optimized V-pit size of approximately 200–250 nm in our experiment could be concluded for MQWs with 15 pairs SLS, which exhibited an IQE value of 70%.

  16. Excitonic transitions in Be-doped GaAs/AlAs multiple quantum well

    NASA Astrophysics Data System (ADS)

    Wei-Min, Zheng; Su-Mei, Li; Wei-Yan, Cong; Ai-Fang, Wang; Bin, Li; Hai-Bei, Huang

    2016-04-01

    A series of GaAs/AlAs multiple-quantum wells doped with Be is grown by molecular beam epitaxy. The photoluminescence spectra are measured at 4, 20, 40, 80, 120, and 200 K, respectively. The recombination transition emission of heavy-hole and light-hole free excitons is clearly observed and the transition energies are measured with different quantum well widths. In addition, a theoretical model of excitonic states in the quantum wells is used, in which the symmetry of the component of the exciton wave function representing the relative motion is allowed to vary between the two- and three-dimensional limits. Then, within the effective mass and envelope function approximation, the recombination transition energies of the heavy- and light-hole excitons in GaAs/AlAs multiple-quantum wells are calculated each as a function of quantum well width by the shooting method and variational principle with two variational parameters. The results show that the excitons are neither 2D nor 3D like, but are in between in character and that the theoretical calculation is in good agreement with the experimental results. Project supported by the National Natural Science Foundation of China (Grant No. 61178039) and the Natural Science Foundation of Shandong Province, China (Grant No. ZR2012FM028).

  17. Ab Initio study of multiple exciton generation in layered structure quantum dots

    NASA Astrophysics Data System (ADS)

    Zhang, Zhiyong; Zimmerman, Paul; Cui, Yi; Musgrave, Charles

    2011-03-01

    Multiple Exciton Generation (MEG) can potentially increase the photovoltaic conversion efficiency significantly and has been reported in a large number of systems and has been extensively studies theoretically and experimentally. Here we report our study of the MEG process in inorganic layered structure quantum dots using high level Ab Initio methods that are capable of electronic states of multi-exciton in character. Our results show that multiple states that are of multi-exciton character exist in quantum dots and different mechanisms govern the MEG process in quantum dots: (1) MEG through an internal crossing mechanism from a optically active state to an optically dark multi-exciton state, as in the singlet fission process of pentacene; and (2) direct multi-exciton generation through an optically active excited state. We also discuss detailed structure evolution of quantum dots, from stable molecular like structures of various shapes and sizes, to larger quantum dots of bulk like bonding motifs with distinctive surface structures and illustrate the correlation between structure and the multi-exciton states.

  18. Size dependence of the multiple exciton generation rate in CdSe quantum dots.

    PubMed

    Lin, Zhibin; Franceschetti, Alberto; Lusk, Mark T

    2011-04-26

    The multiplication rates of hot carriers in CdSe quantum dots are quantified using an atomistic pseudopotential approach and first-order perturbation theory. We consider both the case of an individual carrier (electron or hole) decaying into a trion and the case of an electron-hole pair decaying into a biexciton. The dependence on quantum dot volume of multiplication rate, density of final states, and effective Coulomb interaction are determined. We show that the multiplication rate of a photogenerated electron-hole pair decreases with dot size for a given absolute photon energy. However, if the photon energy is rescaled by the volume-dependent optical gap, then smaller dots exhibit an enhancement in carrier multiplication rate for a given relative photon energy. We find that holes have much higher multiplication rates than electrons of the same excess energy due to the larger density of final states (positive trions). When electron-hole pairs are generated by photon absorption, however, the net carrier multiplication rate is dominated by electrons because they have much higher excess energy on average. We also find, contrary to earlier studies, that the effective Coulomb coupling governing carrier multiplication is energy-dependent. PMID:21355556

  19. Multiplicative logarithmic corrections to quantum criticality in three-dimensional dimerized antiferromagnets

    NASA Astrophysics Data System (ADS)

    Qin, Yanqi; Normand, Bruce; Sandvik, Anders; Meng, Zi Yang

    We investigate the quantum phase transition in an S=1/2 dimerized Heisenberg antiferromagnet in three spatial dimensions. By means of quantum Monte Carlo simulations and finite-size scaling analyses, we get high-precision results for the quantum critical properties at the transition from the magnetically disordered dimer-singlet phase to the ordered Neel phase. This transition breaks O(N) symmetry with N=3 in D=3+1 dimensions. This is the upper critical dimension, where multiplicative logarithmic corrections to the leading mean-field critical properties are expected; we extract these corrections, establishing their precise forms for both the zero-temperature staggered magnetization, ms, and the Neel temperature, TN. We present a scaling ansatz for TN, including logarithmic corrections, which agrees with our data and indicates exact linearity with ms, implying a complete decoupling of quantum and thermal fluctuation effects close to the quantum critical point. These logarithmic scaling forms have not previously identified or verified by unbiased numerical methods and we discuss their relevance to experimental studies of dimerized quantum antiferromagnets such as TlCuCl3. Ref.: arXiv:1506.06073

  20. High performance red-emitting multiple layer InGaN/GaN quantum dot lasers

    NASA Astrophysics Data System (ADS)

    Frost, Thomas; Hazari, Arnab; Aiello, Anthony; Zunaid Baten, Md; Yan, Lifan; Mirecki-Millunchick, Joanna; Bhattacharya, Pallab

    2016-03-01

    InGaN/GaN self-organized quantum dots can provide useful advantages over quantum wells for the realization of long-wavelength visible light sources because the dots are formed by strain relaxation. A III-nitride based laser emitting in the red (λ ˜ 630 nm), which has not been demonstrated with quantum wells, would be useful for a host of applications. We have investigated the epitaxy and characteristics of self-organized InGaN/GaN multiple layer quantum dots grown by plasma-assisted molecular beam epitaxy and have optimized their properties by tuning the growth parameters. Red-emitting (λ ˜ 630 nm) quantum dots have radiative lifetime ˜2.5 ns and internal quantum efficiency greater than 50%. Edge-emitting red-lasers with multi-dot layers in the active region exhibit an extremely low threshold current density of 1.6 kA/cm2, a high temperature coefficient T0 = 240 K, and a large differential gain dg/dn = 9 × 10-17 cm2.

  1. Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240–350 nm emission

    SciTech Connect

    Himwas, C.; Hertog, M. den; Dang, Le Si; Songmuang, R.; Monroy, E.

    2014-12-15

    We present structural and optical studies of AlGaN sections and AlGaN/AlN nanodisks (NDs) in nanowires grown by plasma-assisted molecular beam epitaxy. The Al-Ga intermixing at Al(Ga)N/GaN interfaces and the chemical inhomogeneity in AlGaN NDs evidenced by scanning transmission electron microscopy are attributed to the strain relaxation process. This interpretation is supported by the three-dimensional strain distribution calculated by minimizing the elastic energy in the structure. The alloy inhomogeneity increases with the Al content, leading to enhanced carrier localization signatures in the luminescence characteristics, i.e., red shift of the emission, s-shaped temperature dependence, and linewidth broadening. Despite these effects, the emission energy of AlGaN/AlN NDs can be tuned in the 240–350 nm range with internal quantum efficiencies around 30%.

  2. Singlet fission in pentacene through multiple exciton quantum states

    NASA Astrophysics Data System (ADS)

    Zhang, Zhiyong; Zimmerman, Paul; Musgrave, Charles

    2010-03-01

    Multi-exciton generation (MEG) has been reported for several materials and may dramatically increase solar cell efficiency. Singlet fission is the molecular analogue of MEG and has been observed in various systems, including tetracene and pentacene, however, no fundamental mechanism for singlet fission has yet been described, although it may govern MEG processes in a variety of materials. Because photoexcited states have single-exciton character, singlet fission to produce a pair of triplet excitons must involve an intermediate state that: (1) exhibits multi-exciton (ME) character, (2) is accessible from S1 and satisfies the fission energy requirement, and (3) efficiently dissociates into multiple electron-hole pairs. Here, we use sophisticated ab initio calculations to show that singlet fission in pentacene proceeds through a dark state (D) of ME character that lies just below S1, satisfies the fission energy requirement (ED>2ET0), and splits into two triplets (2xT0). In tetracene, D lies just above S1, consistent with the observation that singlet fission is thermally activated in tetracene. Rational design of photovoltaic systems that exploit singlet fission will require ab initio analysis of ME states such as D.

  3. Electrical defects in AlGaN and InAlN

    NASA Astrophysics Data System (ADS)

    Johnstone, D.; Leach, Jacob H.; Kovalskii, Vladimir A.; Fan, Qian; Xie, Jingqiao; Morkoç, Hadis

    2009-02-01

    Compound semiconductors based on GaN have multiple functional applications. Useful compositions include GaN, and ternary and quaternary compositions of (AlGaIn)N. Defects arising from lattice mismatch, point defects, or impurities may act as electrical trapping centers and degrade device efficiency. Current-voltage, capacitance-voltage, thermal admittance spectroscopy (TAS), and deep level transient spectroscopy (DLTS) measurements are applied to characterize the defects in Al0.40Ga0.80N and In0.18Al0.82N in this report. Broad peaks with a shoulder at high temperature dominate the DLTS spectra in each of the materials. An acceptor trap associated with a dislocation appears at 340 K in AlGaN. The defect has an energy of 0.2 eV and capture cross section of 10-21 cm2. A second trap at 0.35 eV, 10-14 cm2 appears in the TAS measurements in addition to the trap at 0.2 eV. Defects in InAlN are dominated by a peak near 150 K. Two traps appear in the TAS measurements. Both traps in the InAlN are acceptors, based on a lack of field dependent emission rates using double pulse DLTS (DDLTS). The two energy levels in InAlN appear to be coupled, with only one state occupied at a time.

  4. Carrier multiplication detected through transient photocurrent in device-grade films of lead selenide quantum dots

    DOE PAGESBeta

    Gao, Jianbo; Fidler, Andrew F.; Klimov, Victor I.

    2015-09-08

    In carrier multiplication, the absorption of a single photon results in two or more electron–hole pairs. Quantum dots are promising materials for implementing carrier multiplication principles in real-life technologies. So far, however, most of research in this area has focused on optical studies of solution samples with yet to be proven relevance to practical devices. We report ultra-fast electro-optical studies of device-grade films of electronically coupled quantum dots that allow us to observe multiplication directly in the photocurrent. Our studies help rationalize previous results from both optical spectroscopy and steady-state photocurrent measurements and also provide new insights into effects ofmore » electric field and ligand treatments on multiexciton yields. Importantly, we demonstrate that using appropriate chemical treatments of the films, extra charges produced by carrier multiplication can be extracted from the quantum dots before they are lost to Auger recombination and hence can contribute to photocurrent of practical devices.« less

  5. Effective one-body dynamics in multiple-quantum NMR experiments

    NASA Astrophysics Data System (ADS)

    Rufeil-Fiori, E.; Sánchez, C. M.; Oliva, F. Y.; Pastawski, H. M.; Levstein, P. R.

    2009-03-01

    A suitable NMR experiment in a one-dimensional dipolar coupled spin system allows one to reduce the natural many-body dynamics into effective one-body dynamics. We verify this in a polycrystalline sample of hydroxyapatite (HAp) by monitoring the excitation of NMR many-body superposition states: the multiple-quantum coherences. The observed effective one-dimensionality of HAp relies on the quasi-one-dimensional structure of the dipolar coupled network that, as we show here, is dynamically enhanced by the quantum Zeno effect. Decoherence is also probed through a Loschmidt echo experiment, where the time reversal is implemented on the double-quantum Hamiltonian, HDQ∝Ii+Ij++Ii-Ij- . We contrast the decoherence of adamantane, a standard three-dimensional system, with that of HAp. While the first shows an abrupt Fermi-type decay, HAp presents a smooth exponential law.

  6. Highly efficient multiple-layer CdS quantum dot sensitized III-V solar cells.

    PubMed

    Lin, Chien-Chung; Han, Hau-Vei; Chen, Hsin-Chu; Chen, Kuo-Ju; Tsai, Yu-Lin; Lin, Wein-Yi; Kuo, Hao-Chung; Yu, Peichen

    2014-02-01

    In this review, the concept of utilization of solar spectrum in order to increase the solar cell efficiency is discussed. Among the three mechanisms, down-shifting effect is investigated in detail. Organic dye, rare-earth minerals and quantum dots are three most popular down-shift materials. While the enhancement of solar cell efficiency was not clearly observed in the past, the advances in quantum dot fabrication have brought strong response out of the hybrid platform of a quantum dot solar cell. A multiple layer structure, including PDMS as the isolation layer, is proposed and demonstrated. With the help of pulse spray system, precise control can be achieved and the optimized concentration can be found. PMID:24749412

  7. Code-division multiple-access multiuser demodulator by using quantum fluctuations

    NASA Astrophysics Data System (ADS)

    Otsubo, Yosuke; Inoue, Jun-ichi; Nagata, Kenji; Okada, Masato

    2014-07-01

    We examine the average-case performance of a code-division multiple-access (CDMA) multiuser demodulator in which quantum fluctuations are utilized to demodulate the original message within the context of Bayesian inference. The quantum fluctuations are built into the system as a transverse field in the infinite-range Ising spin glass model. We evaluate the performance measurements by using statistical mechanics. We confirm that the CDMA multiuser modulator using quantum fluctuations achieve roughly the same performance as the conventional CDMA multiuser modulator through thermal fluctuations on average. We also find that the relationship between the quality of the original information retrieval and the amplitude of the transverse field is somehow a "universal feature" in typical probabilistic information processing, viz., in image restoration, error-correcting codes, and CDMA multiuser demodulation.

  8. Code-division multiple-access multiuser demodulator by using quantum fluctuations.

    PubMed

    Otsubo, Yosuke; Inoue, Jun-Ichi; Nagata, Kenji; Okada, Masato

    2014-07-01

    We examine the average-case performance of a code-division multiple-access (CDMA) multiuser demodulator in which quantum fluctuations are utilized to demodulate the original message within the context of Bayesian inference. The quantum fluctuations are built into the system as a transverse field in the infinite-range Ising spin glass model. We evaluate the performance measurements by using statistical mechanics. We confirm that the CDMA multiuser modulator using quantum fluctuations achieve roughly the same performance as the conventional CDMA multiuser modulator through thermal fluctuations on average. We also find that the relationship between the quality of the original information retrieval and the amplitude of the transverse field is somehow a "universal feature" in typical probabilistic information processing, viz., in image restoration, error-correcting codes, and CDMA multiuser demodulation. PMID:25122270

  9. Green light emission by InGaN/GaN multiple-quantum-well microdisks

    SciTech Connect

    Hsu, Yu-Chi; Lo, Ikai Shih, Cheng-Hung; Pang, Wen-Yuan; Hu, Chia-Hsuan; Wang, Ying-Chieh; Tsai, Cheng-Da; Chou, Mitch M. C.; Hsu, Gary Z. L.

    2014-03-10

    The high-quality In{sub x}Ga{sub 1−x}N/GaN multiple quantum wells were grown on GaN microdisks with γ-LiAlO{sub 2} substrate by using low-temperature two-step technique of plasma-assisted molecular beam epitaxy. We demonstrated that the hexagonal GaN microdisk can be used as a strain-free substrate to grow the advanced In{sub x}Ga{sub 1−x}N/GaN quantum wells for the optoelectronic applications. We showed that the green light of 566-nm wavelength (2.192 eV) emitted from the In{sub x}Ga{sub 1−x}N/GaN quantum wells was tremendously enhanced in an order of amplitude higher than the UV light of 367-nm wavelength (3.383 eV) from GaN.

  10. Theoretical study of polarization insensitivity of carrier-induced refractive index change of multiple quantum well.

    PubMed

    Miao, Qingyuan; Zhou, Qunjie; Cui, Jun; He, Ping-An; Huang, Dexiu

    2014-12-29

    Characteristics of polarization insensitivity of carrier-induced refractive index change of 1.55 μm tensile-strained multiple quantum well (MQW) are theoretically investigated. A comprehensive MQW model is proposed to effectively extend the application range of previous models. The model considers the temperature variation as well as the nonuniform distribution of injected carrier in MQW. Tensile-strained MQW is expected to achieve polarization insensitivity of carrier-induced refractive index change over a wide wavelength range as temperature varies from 0°C to 40°C, while the magnitude of refractive index change keeps a large value (more than 3 × 10-3). And that the polarization insensitivity of refractive index change can maintain for a wide range of carrier concentration. Multiple quantum well with different material and structure parameters is anticipated to have the similar polarization insensitivity of refractive index change, which shows the design flexibility. PMID:25607157

  11. High-resolution multiple quantum MAS NMR spectroscopy of half-integer quadrupolar nuclei

    NASA Astrophysics Data System (ADS)

    Wu, Gang; Rovnyank, David; Sun, Boqin; Griffin, Robert G.

    1996-02-01

    We demonstrate the utility of a two-pulse sequence in obtaining high-resolution solid state NMR spectra of half-integer quadrupolar nuclei with magic-angle-spinning (MAS). The experiment, which utilizes multiple/single-quantum correlation, was first described in a different form by Frydman and Harwood [J. Am. Chem. Soc. 117 (1995) 5367] and yields high-resolution isotropic NMR spectra where shifts are determined by the sum of resonance offset (chemical shift) and second-order quadrupolar effects. The two-pulse sequence described here is shown to provide a higher and more uniform excitation of multiple-quantum coherence than the three-pulse sequence used previously.

  12. Entropic Uncertainty Relation and Information Exclusion Relation for multiple measurements in the presence of quantum memory

    NASA Astrophysics Data System (ADS)

    Zhang, Jun; Zhang, Yang; Yu, Chang-Shui

    2015-06-01

    The Heisenberg uncertainty principle shows that no one can specify the values of the non-commuting canonically conjugated variables simultaneously. However, the uncertainty relation is usually applied to two incompatible measurements. We present tighter bounds on both entropic uncertainty relation and information exclusion relation for multiple measurements in the presence of quantum memory. As applications, three incompatible measurements on Werner state and Horodecki’s bound entangled state are investigated in details.

  13. Quantum Simulation of Multiple-Exciton Generation in a Nanocrystal by a Single Photon

    SciTech Connect

    Witzel, Wayne M.; Shabaev, Andrew; Hellberg, C. Stephen; Jacobs, Verne L.; Efros, Alexander L.

    2010-09-22

    We have shown theoretically that efficient multiple-exciton generation (MEG) by a single photon can be observed in small nanocrystals. Our quantum simulations that include hundreds of thousands of exciton and multiexciton states demonstrate that the complex time-dependent dynamics of these states in a closed electronic system yields a saturated MEG effect on a picosecond time scale. Including phonon relaxation confirms that efficient MEG requires the exciton-biexciton coupling time to be faster than exciton relaxation time.

  14. Entropic Uncertainty Relation and Information Exclusion Relation for multiple measurements in the presence of quantum memory.

    PubMed

    Zhang, Jun; Zhang, Yang; Yu, Chang-shui

    2015-01-01

    The Heisenberg uncertainty principle shows that no one can specify the values of the non-commuting canonically conjugated variables simultaneously. However, the uncertainty relation is usually applied to two incompatible measurements. We present tighter bounds on both entropic uncertainty relation and information exclusion relation for multiple measurements in the presence of quantum memory. As applications, three incompatible measurements on Werner state and Horodecki's bound entangled state are investigated in details. PMID:26118488

  15. Entropic Uncertainty Relation and Information Exclusion Relation for multiple measurements in the presence of quantum memory

    PubMed Central

    Zhang, Jun; Zhang, Yang; Yu, Chang-shui

    2015-01-01

    The Heisenberg uncertainty principle shows that no one can specify the values of the non-commuting canonically conjugated variables simultaneously. However, the uncertainty relation is usually applied to two incompatible measurements. We present tighter bounds on both entropic uncertainty relation and information exclusion relation for multiple measurements in the presence of quantum memory. As applications, three incompatible measurements on Werner state and Horodecki’s bound entangled state are investigated in details. PMID:26118488

  16. Tailoring the spin polarization in Ge/SiGe multiple quantum wells

    SciTech Connect

    Giorgioni, Anna; Pezzoli, Fabio; Gatti, Eleonora; Grilli, Emanuele; Guzzi, Mario; Bottegoni, Federico; Cecchi, Stefano; Ciccacci, Franco; Isella, Giovanni; Trivedi, Dhara; Song, Yang; Li, Pengki; Dery, Hanan

    2013-12-04

    We performed spin-resolved photoluminescence measurements on Ge/SiGe multiple quantum wells with different well thickness and using different exciting power densities. The polarization of the direct emission strongly depends on the relative weight of electrons photoexcited from the light and the heavy hole subbands. The study of the polarization as a function of the exciting power highlights the role of the carrier-carrier interactions in determining spin depolarization.

  17. Multiple-quantum NMR studies of spin clusters in liquid crystals and zeolites

    SciTech Connect

    Pearson, J. . Dept. of Chemistry Lawrence Berkeley Lab., CA )

    1991-07-01

    This work will describe the use of MQ NMR to study spin clusters in anisotropic materials. A technique known as multiple-quantum spin counting was used to determine average spin cluster sizes liquid crystalline materials and in faujacitic zeolites containing aromatic hydrocarbons. The first half of the thesis will describe MQ NMR and the MQ spin counting technique, and the second half of the thesis will describe the actual experiments and their results.

  18. Polyad quantum numbers and multiple resonances in anharmonic vibrational studies of polyatomic molecules

    SciTech Connect

    Krasnoshchekov, Sergey V.; Stepanov, Nikolay F.

    2013-11-14

    In the theory of anharmonic vibrations of a polyatomic molecule, mixing the zero-order vibrational states due to cubic, quartic and higher-order terms in the potential energy expansion leads to the appearance of more-or-less isolated blocks of states (also called polyads), connected through multiple resonances. Such polyads of states can be characterized by a common secondary integer quantum number. This polyad quantum number is defined as a linear combination of the zero-order vibrational quantum numbers, attributed to normal modes, multiplied by non-negative integer polyad coefficients, which are subject to definition for any particular molecule. According to Kellman's method [J. Chem. Phys. 93, 6630 (1990)], the corresponding formalism can be conveniently described using vector algebra. In the present work, a systematic consideration of polyad quantum numbers is given in the framework of the canonical Van Vleck perturbation theory (CVPT) and its numerical-analytic operator implementation for reducing the Hamiltonian to the quasi-diagonal form, earlier developed by the authors. It is shown that CVPT provides a convenient method for the systematic identification of essential resonances and the definition of a polyad quantum number. The method presented is generally suitable for molecules of significant size and complexity, as illustrated by several examples of molecules up to six atoms. The polyad quantum number technique is very useful for assembling comprehensive basis sets for the matrix representation of the Hamiltonian after removal of all non-resonance terms by CVPT. In addition, the classification of anharmonic energy levels according to their polyad quantum numbers provides an additional means for the interpretation of observed vibrational spectra.

  19. Polyad quantum numbers and multiple resonances in anharmonic vibrational studies of polyatomic molecules

    NASA Astrophysics Data System (ADS)

    Krasnoshchekov, Sergey V.; Stepanov, Nikolay F.

    2013-11-01

    In the theory of anharmonic vibrations of a polyatomic molecule, mixing the zero-order vibrational states due to cubic, quartic and higher-order terms in the potential energy expansion leads to the appearance of more-or-less isolated blocks of states (also called polyads), connected through multiple resonances. Such polyads of states can be characterized by a common secondary integer quantum number. This polyad quantum number is defined as a linear combination of the zero-order vibrational quantum numbers, attributed to normal modes, multiplied by non-negative integer polyad coefficients, which are subject to definition for any particular molecule. According to Kellman's method [J. Chem. Phys. 93, 6630 (1990)], the corresponding formalism can be conveniently described using vector algebra. In the present work, a systematic consideration of polyad quantum numbers is given in the framework of the canonical Van Vleck perturbation theory (CVPT) and its numerical-analytic operator implementation for reducing the Hamiltonian to the quasi-diagonal form, earlier developed by the authors. It is shown that CVPT provides a convenient method for the systematic identification of essential resonances and the definition of a polyad quantum number. The method presented is generally suitable for molecules of significant size and complexity, as illustrated by several examples of molecules up to six atoms. The polyad quantum number technique is very useful for assembling comprehensive basis sets for the matrix representation of the Hamiltonian after removal of all non-resonance terms by CVPT. In addition, the classification of anharmonic energy levels according to their polyad quantum numbers provides an additional means for the interpretation of observed vibrational spectra.

  20. Polyad quantum numbers and multiple resonances in anharmonic vibrational studies of polyatomic molecules.

    PubMed

    Krasnoshchekov, Sergey V; Stepanov, Nikolay F

    2013-11-14

    In the theory of anharmonic vibrations of a polyatomic molecule, mixing the zero-order vibrational states due to cubic, quartic and higher-order terms in the potential energy expansion leads to the appearance of more-or-less isolated blocks of states (also called polyads), connected through multiple resonances. Such polyads of states can be characterized by a common secondary integer quantum number. This polyad quantum number is defined as a linear combination of the zero-order vibrational quantum numbers, attributed to normal modes, multiplied by non-negative integer polyad coefficients, which are subject to definition for any particular molecule. According to Kellman's method [J. Chem. Phys. 93, 6630 (1990)], the corresponding formalism can be conveniently described using vector algebra. In the present work, a systematic consideration of polyad quantum numbers is given in the framework of the canonical Van Vleck perturbation theory (CVPT) and its numerical-analytic operator implementation for reducing the Hamiltonian to the quasi-diagonal form, earlier developed by the authors. It is shown that CVPT provides a convenient method for the systematic identification of essential resonances and the definition of a polyad quantum number. The method presented is generally suitable for molecules of significant size and complexity, as illustrated by several examples of molecules up to six atoms. The polyad quantum number technique is very useful for assembling comprehensive basis sets for the matrix representation of the Hamiltonian after removal of all non-resonance terms by CVPT. In addition, the classification of anharmonic energy levels according to their polyad quantum numbers provides an additional means for the interpretation of observed vibrational spectra. PMID:24320248

  1. Piezoelectric domains in the AlGaN hexagonal microrods: Effect of crystal orientations

    NASA Astrophysics Data System (ADS)

    Sivadasan, A. K.; Mangamma, G.; Bera, Santanu; Kamruddin, M.; Dhara, Sandip

    2016-05-01

    Presently, the piezoelectric materials are finding tremendous applications in the micro-mechanical actuators, sensors, and self-powered devices. In this context, the studies pertaining to piezoelectric properties of materials in the different size ranges are very important for the scientific community. The III-nitrides are exceptionally important, not only for optoelectronic but also for their piezoelectric applications. In the present study, we synthesized AlGaN via self-catalytic vapor-solid mechanism by atmospheric pressure chemical vapor deposition technique on AlN base layer over intrinsic Si(100) substrate. The growth process is substantiated using X-ray diffraction and X-ray photoelectron spectroscopy. The Raman and photoluminescence studies reveal the formation of AlGaN microrods in the wurtzite phase and ensure the high optical quality of the crystalline material. The single crystalline, direct wide band gap and hexagonally shaped AlGaN microrods are studied for understanding the behavior of the crystallites under the application of constant external electric field using the piezoresponse force microscopy. The present study is mainly focused on understanding the behavior of induced polarization for the determination of piezoelectric coefficient of AlGaN microrod along the c-axis and imaging of piezoelectric domains in the sample originating because of the angular inclination of AlGaN microrods with respect to its AlN base layers.

  2. Electrical properties of n-type AlGaN with high Si concentration

    NASA Astrophysics Data System (ADS)

    Takeda, Kunihiro; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu

    2016-05-01

    The electrical properties of Si-doped AlGaN layers (AlN molar fractions: 0.03-0.06) with the donor concentrations (N D) from 8.8 × 1017 to 4.5 × 1020 cm-3 were investigated by variable-temperature Hall effect measurement using the van der Pauw method. A minimum resistivity of 3.6 × 10-4 Ω cm was obtained for Si-doped AlGaN with a smooth surface at room temperature. We found that the activation energy of the Si donor is affected by the Coulomb interaction in the AlGaN layer with N D values from 8.8 × 1017 to 2.5 × 1020 cm-3. In several AlGaN layers, the free-electron concentration did not vary with sample temperature, as expected in the case of degeneracy. The localization of GaN in the AlGaN layer was speculated as a cause of degeneracy of samples.

  3. Heteronuclear correlations by multiple-quantum evolution. II. Proton-proton "decoupling" and multiplicity labeling in a constant-time experiment using carbon detection

    NASA Astrophysics Data System (ADS)

    Batta, Gyula; Kövér, Katalin E.

    Modified Müller-Bolton type heteronuclear multiple-quantum correlation experiments are analyzed theoretically and experimentally. It is shown that the constant-time version offers homonuclear decoupling, multiplicity labeling, and a very efficient suppression of strong coupling artifacts. Such sequences may have advantages for studying macromolecules.

  4. Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage

    SciTech Connect

    Bajaj, Sanyam Hung, Ting-Hsiang; Akyol, Fatih; Nath, Digbijoy; Rajan, Siddharth

    2014-12-29

    We report on the potential of high electron mobility transistors (HEMTs) consisting of high composition AlGaN channel and barrier layers for power switching applications. Detailed two-dimensional (2D) simulations show that threshold voltages in excess of 3 V can be achieved through the use of AlGaN channel layers. We also calculate the 2D electron gas mobility in AlGaN channel HEMTs and evaluate their power figures of merit as a function of device operating temperature and Al mole fraction in the channel. Our models show that power switching transistors with AlGaN channels would have comparable on-resistance to GaN-channel based transistors for the same operation voltage. The modeling in this paper shows the potential of high composition AlGaN as a channel material for future high threshold enhancement mode transistors.

  5. Prostate specific antigen detection using AlGaN /GaN high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Kang, B. S.; Wang, H. T.; Lele, T. P.; Tseng, Y.; Ren, F.; Pearton, S. J.; Johnson, J. W.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.

    2007-09-01

    Antibody-functionalized Au-gated AlGaN /GaN high electron mobility transistors (HEMTs) were used to detect prostate specific antigen (PSA). The PSA antibody was anchored to the gate area through the formation of carboxylate succinimdyl ester bonds with immobilized thioglycolic acid. The AlGaN /GaN HEMT drain-source current showed a rapid response of less than 5s when target PSA in a buffer at clinical concentrations was added to the antibody-immobilized surface. The authors could detect a wide range of concentrations from 10pg/mlto1μg/ml. The lowest detectable concentration was two orders of magnitude lower than the cutoff value of PSA measurements for clinical detection of prostate cancer. These results clearly demonstrate the promise of portable electronic biological sensors based on AlGaN /GaN HEMTs for PSA screening.

  6. Leakage mechanism in GaN and AlGaN Schottky interfaces

    NASA Astrophysics Data System (ADS)

    Hashizume, Tamotsu; Kotani, Junji; Hasegawa, Hideki

    2004-06-01

    Based on detailed temperature-dependent current-voltage (I-V-T) measurements the mechanism of leakage currents through GaN and AlGaN Schottky interfaces is discussed. The experiments were compared to calculations based on thin surface barrier model in which the effects of surface defects were taken into account. Our simulation method reproduced the experimental I-V-T characteristics of the GaN and AlGaN Schottky diodes, and gave excellent fitting results to the reported Schottky I-V curves in GaN for both forward and reverse biases at different temperatures. The present results indicate that the barrier thinning caused by unintentional surface-defect donors enhances the tunneling transport processes, leading to large leakage currents through GaN and AlGaN Schottky interfaces.

  7. An analysis of temperature dependent piezoelectric Franz-Keldysh effect in AlGaN

    NASA Astrophysics Data System (ADS)

    Hou, Y. T.; Teo, K. L.; Li, M. F.; Uchida, Kazuo; Tokunaga, Hiroki; Akutsu, Nakao; Matsumoto, Koh

    2000-02-01

    Strong Franz-Keldysh oscillations near the band gap of AlGaN are observed in the contactless electroreflectance (CER) studies of a GaN/InGaN/AlGaN multilayer structure. The line shape analysis of the CER spectra at different temperatures provides an accurate determination of the AlGaN band gap energies and the built-in electric fields. Using the existing data of the thermal expansion coefficients of GaN and sapphire, and the piezoelectric constants of AlGaN, the temperature dependence of the electric field is estimated and is in good agreement with the experimental results between 15 and 300 K. We attribute such electric field to the piezoelectric strain effect.

  8. Investigation of the thickness effect to impedance analysis results AlGaN acoustic sensor

    NASA Astrophysics Data System (ADS)

    Özen, Soner; Bilgiç, Eyüp; Gülmez, Gülay; Şenay, Volkan; Pat, Suat; Korkmaz, Şadan; Mohammadigharehbagh, Reza

    2016-03-01

    In this study, AlGaN acoustic sensors were deposited on aluminum metal substrate by thermionic vacuum arc (TVA) method, for the first time. Impedance analyses of the fabricated acoustic sensors were investigated for the determining of effect of the nano layer thickness. Thickness values are very close to each others. Fabricated sensors have been fabricated from AlGaN deposited on aluminum substrates. Gallium materials are used in many applications for optoelectronic device and semiconductor technology. Thermionic vacuum arc is the deposition technology for the variously materials and applications field. TVA production parameters and some properties of the deposited layers were investigated. TVA is the fast deposition technology for the gallium compounds and doped gallium compounds. Obtained results that AlGaN layer are very promising material for an acoustic sensor but also TVA is proper fast technology for the production.

  9. Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm

    NASA Astrophysics Data System (ADS)

    Li, X.; Le Gac, G.; Bouchoule, S.; El Gmili, Y.; Patriarche, G.; Sundaram, S.; Disseix, P.; Réveret, F.; Leymarie, J.; Streque, J.; Genty, F.; Salvestrini, J.-P.; Dupuis, R. D.; Li, X.-H.; Voss, P. L.; Ougazzaden, A.

    2015-12-01

    10-period Al0.57Ga0.43N/Al0.38Ga0.62N multi-quantum wells (MQWs) were grown on a relaxed Al0.58Ga0.42N buffer on AlN templates on sapphire. The threading dislocations and V-pits were characterized and their origin is discussed. The influence of V-pits on the structural quality of the MQWs and on optical emission at 280 nm was analyzed. It was observed that near-surface V-pits were always associated with grain boundaries consisting of edge threading dislocations originating from the AlN/Al2O3 interface. Although the high density of V-pits disrupted MQWs growth, it did not affect the internal quantum efficiency which was measured to be ~1% at room temperature even when V-pit density was increased from 7×107 cm-2 to 2×109 cm-2. The results help to understand the origin, propagation and influences of the typical defects in AlGaN MQWs grown on AlN/Al2O3 templates which may lead to further improvement of the performance of DUV devices.

  10. Semiconductor Quantum Dots and Quantum Dot Arrays and Applications of Multiple Exciton Generation to Third-Generation Photovoltaic Solar Cells

    SciTech Connect

    Nozik, Arthur J.; Beard, Matthew C.; Luther, Joseph M.; Law, Matt; Ellingson, Randy J.; Johnson, Justin C.

    2010-10-14

    Here, we will first briefly summarize the general principles of QD synthesis using our previous work on InP as an example. Then we will focus on QDs of the IV-VI Pb chalcogenides (PbSe, PbS, and PbTe) and Si QDs because these were among the first QDs that were reported to produce multiple excitons upon absorbing single photons of appropriate energy (a process we call multiple exciton generation (MEG)). We note that in addition to Si and the Pb-VI QDs, two other semiconductor systems (III-V InP QDs(56) and II-VI core-shell CdTe/CdSe QDs(57)) were very recently reported to also produce MEG. Then we will discuss photogenerated carrier dynamics in QDs, including the issues and controversies related to the cooling of hot carriers and the magnitude and significance of MEG in QDs. Finally, we will discuss applications of QDs and QD arrays in novel quantum dot PV cells, where multiple exciton generation from single photons could yield significantly higher PV conversion efficiencies.

  11. Transmission coefficients for chemical reactions with multiple states: role of quantum decoherence.

    PubMed

    de la Lande, Aurélien; Řezáč, Jan; Lévy, Bernard; Sanders, Barry C; Salahub, Dennis R

    2011-03-23

    Transition-state theory (TST) is a widely accepted paradigm for rationalizing the kinetics of chemical reactions involving one potential energy surface (PES). Multiple PES reaction rate constants can also be estimated within semiclassical approaches provided the hopping probability between the quantum states is taken into account when determining the transmission coefficient. In the Marcus theory of electron transfer, this hopping probability was historically calculated with models such as Landau-Zener theory. Although the hopping probability is intimately related to the question of the transition from the fully quantum to the semiclassical description, this issue is not adequately handled in physicochemical models commonly in use. In particular, quantum nuclear effects such as decoherence or dephasing are not present in the rate constant expressions. Retaining the convenient semiclassical picture, we include these effects through the introduction of a phenomenological quantum decoherence function. A simple modification to the usual TST rate constant expression is proposed: in addition to the electronic coupling, a characteristic decoherence time τ(dec) now also appears as a key parameter of the rate constant. This new parameter captures the idea that molecular systems, although intrinsically obeying quantum mechanical laws, behave semiclassically after a finite but nonzero amount of time (τ(dec)). This new degree of freedom allows a fresh look at the underlying physics of chemical reactions involving more than one quantum state. The ability of the proposed formula to describe the main physical lines of the phenomenon is confirmed by comparison with results obtained from density functional theory molecular dynamics simulations for a triplet to singlet transition within a copper dioxygen adduct relevant to the question of dioxygen activation by copper monooxygenases. PMID:21344903

  12. Third generation photovoltaics based on multiple exciton generation in quantum confined semiconductors.

    PubMed

    Beard, Matthew C; Luther, Joseph M; Semonin, Octavi E; Nozik, Arthur J

    2013-06-18

    Improving the primary photoconversion process in a photovoltaiccell by utilizing the excess energy that is otherwise lost as heat can lead to an increase in the overall power conversion efficiency (PCE). Semiconductor nanocrystals (NCs) with at least one dimension small enough to produce quantum confinement effects provide new ways of controlling energy flow not achievable in thin film or bulk semiconductors. Researchers have developed various strategies to incorporate these novel structures into suitable solar conversion systems. Some of these methods could increase the PCE past the Shockley-Queisser (SQ) limit of ∼33%, making them viable "third generation photovoltaic" (TGPV) cell architectures. Surpassing the SQ limit for single junction solar cells presents both a scientific and a technological challenge, and the use of semiconductor NCs to enhance the primary photoconversion process offers a promising potential solution. The NCs are synthesized via solution phase chemical reactions producing stable colloidal solutions, where the reaction conditions can be modified to produce a variety of shapes, compositions, and structures. The confinement of the semiconductor NC in one dimension produces quantum films, wells, or discs. Two-dimensional confinement leads to quantum wires or rods (QRs), and quantum dots (QDs) are three-dimensionally confined NCs. The process of multiple exciton generation (MEG) converts a high-energy photon into multiple electron-hole pairs. Although many studies have demonstrated that MEG is enhanced in QDs compared with bulk semiconductors, these studies have either used ultrafast spectroscopy to measure the photon-to-exciton quantum yields (QYs) or theoretical calculations. Implementing MEG in a working solar cell has been an ongoing challenge. In this Account, we discuss the status of MEG research and strategies towards implementing MEG in working solar cells. Recently we showed an external quantum efficiency for photocurrent of greater

  13. Electric field dependent Electroreflectance of GaAs/AlGaAs multiple quantum well Bragg structure at second quantum state

    NASA Astrophysics Data System (ADS)

    Nakarmi, Mim; Shakya, Naresh; Chaldyshev, Vladimir

    Electroreflectance Spectroscopy was employed to study the effect of electric field on the excitonic transitions in a GaAs/AlGaAs multiple quantum well (MQW) Bragg structure. The sample used in this experiment consists of 60 periods of quantum well structures with GaAs well layer (~13 nm) and AlGaAs barrier layer (~94 nm), grown by molecular beam expitaxy on a semi-insulating GaAs substrate. The sample structure was designed to coincide the Bragg resonance peak with the x(e2-hh2) exciton transitions. We observed a significant enhancement of excitonic feature around the x(e2-hh2) exciton transition due to the double resonance along with the sharp features of x(e1-hh1) and x(e1-lh1) ground state exciton transitions by tuning the angle of incidence of the light. We will present the results on electric field dependent electroreflectance measurements of this structure and discuss the effect of electric field on the first and second energy states.

  14. Internal quantum efficiency improvement of InGaN/GaN multiple quantum well green light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Znajdek, K.; SibińSki, M.; StrąKowska, A.; Lisik, Z.

    2016-01-01

    In recent years, GaN-based light-emitting diode (LED) has been widely used in various applications, such as RGB lighting system, full-colour display and visible-light communication. However, the internal quantum efficiency (IQE) of green LEDs is significantly lower than that of other visible spectrum LED. This phenomenon is called "green gap". This paper briefly describes the physical mechanism of the low IQE for InGaN/GaN multiple quantum well (MQW) green LED at first. The IQE of green LED is limited by the defects and the internal electric field in MQW. Subsequently, we discuss the recent progress in improving the IQE of green LED in detail. These strategies can be divided into two categories. Some of these methods were proposed to enhance crystal quality of InGaN/GaN MQW with high In composition and low density of defects by modifying the growth conditions. Other methods focused on increasing electron-hole wave function overlap by eliminating the polarization effect.

  15. Enhancement of spectral editing efficacy of multiple quantum filters in in vivo proton magnetic resonance spectroscopy

    NASA Astrophysics Data System (ADS)

    Kim, Hyeonjin; Thompson, Richard B.; Allen, Peter S.

    2012-10-01

    The performance of multiple quantum filters (MQFs) can be disappointing when the background signal also arises from coupled spins. Moreover, at 3.0 T and even higher fields the majority of the spin systems of key brain metabolites fall into the strong-coupling regime. In this manuscript we address comprehensively, the importance of the phase of the multiple quantum coherence-generating pulse (MQ-pulse) in the design of MQFs, using both product operator and numerical analysis, in both zero and double quantum filter designs. The theoretical analyses were experimentally validated with the examples of myo-inositol editing and the separation of glutamate from glutamine. The results demonstrate that the phase of the MQ-pulse per se provides an additional spectral discrimination mechanism based on the degree of coupling beyond the conventional level-of-coherence approach of MQFs. To obtain the best spectral discrimination of strongly-coupled spin systems, therefore, the phase of the MQ-pulse must be included in the portfolio of the sequence parameters to be optimized.

  16. Polarizabilities of Impurity Doped Quantum Dots Under Pulsed Field: Role of Multiplicative White Noise

    NASA Astrophysics Data System (ADS)

    Saha, Surajit; Ghosh, Manas

    2016-02-01

    We perform a rigorous analysis of the profiles of a few diagonal and off-diagonal components of linear ( α xx , α yy , α xy , and α yx ), first nonlinear ( β xxx , β yyy , β xyy , and β yxx ), and second nonlinear ( γ xxxx , γ yyyy , γ xxyy , and γ yyxx ) polarizabilities of quantum dots exposed to an external pulsed field. Simultaneous presence of multiplicative white noise has also been taken into account. The quantum dot contains a dopant represented by a Gaussian potential. The number of pulse and the dopant location have been found to fabricate the said profiles through their interplay. Moreover, a variation in the noise strength also contributes evidently in designing the profiles of above polarizability components. In general, the off-diagonal components have been found to be somewhat more responsive to a variation of noise strength. However, we have found some exception to the above fact for the off-diagonal β yxx component. The study projects some pathways of achieving stable, enhanced, and often maximized output of linear and nonlinear polarizabilities of doped quantum dots driven by multiplicative noise.

  17. Multiple quantum phase transitions and superconductivity in Ce-based heavy fermions.

    PubMed

    Weng, Z F; Smidman, M; Jiao, L; Lu, Xin; Yuan, H Q

    2016-09-01

    Heavy fermions have served as prototype examples of strongly-correlated electron systems. The occurrence of unconventional superconductivity in close proximity to the electronic instabilities associated with various degrees of freedom points to an intricate relationship between superconductivity and other electronic states, which is unique but also shares some common features with high temperature superconductivity. The magnetic order in heavy fermion compounds can be continuously suppressed by tuning external parameters to a quantum critical point, and the role of quantum criticality in determining the properties of heavy fermion systems is an important unresolved issue. Here we review the recent progress of studies on Ce based heavy fermion superconductors, with an emphasis on the superconductivity emerging on the edge of magnetic and charge instabilities as well as the quantum phase transitions which occur by tuning different parameters, such as pressure, magnetic field and doping. We discuss systems where multiple quantum critical points occur and whether they can be classified in a unified manner, in particular in terms of the evolution of the Fermi surface topology. PMID:27533524

  18. Multiple quantum phase transitions and superconductivity in Ce-based heavy fermions

    NASA Astrophysics Data System (ADS)

    Weng, Z. F.; Smidman, M.; Jiao, L.; Lu, Xin; Yuan, H. Q.

    2016-09-01

    Heavy fermions have served as prototype examples of strongly-correlated electron systems. The occurrence of unconventional superconductivity in close proximity to the electronic instabilities associated with various degrees of freedom points to an intricate relationship between superconductivity and other electronic states, which is unique but also shares some common features with high temperature superconductivity. The magnetic order in heavy fermion compounds can be continuously suppressed by tuning external parameters to a quantum critical point, and the role of quantum criticality in determining the properties of heavy fermion systems is an important unresolved issue. Here we review the recent progress of studies on Ce based heavy fermion superconductors, with an emphasis on the superconductivity emerging on the edge of magnetic and charge instabilities as well as the quantum phase transitions which occur by tuning different parameters, such as pressure, magnetic field and doping. We discuss systems where multiple quantum critical points occur and whether they can be classified in a unified manner, in particular in terms of the evolution of the Fermi surface topology.

  19. AlGaN Channel Transistors for Power Management and Distribution

    NASA Technical Reports Server (NTRS)

    VanHove, James M.

    1996-01-01

    Contained within is the Final report of a Phase 1 SBIR program to develop AlGaN channel junction field effect transistors (JFET). The report summarizes our work to design, deposit, and fabricate JFETS using molecular beam epitaxy growth AlGaN. Nitride growth is described using a RF atomic nitrogen plasma source. Processing steps needed to fabricate the device such as ohmic source-drain contacts, reactive ion etching, gate formation, and air bride fabrication are documented. SEM photographs of fabricated power FETS are shown. Recommendations are made to continue the effort in a Phase 2 Program.

  20. Large-Format AlGaN PIN Photodiode Arrays for UV Images

    NASA Technical Reports Server (NTRS)

    Aslam, Shahid; Franz, David

    2010-01-01

    A large-format hybridized AlGaN photodiode array with an adjustable bandwidth features stray-light control, ultralow dark-current noise to reduce cooling requirements, and much higher radiation tolerance than previous technologies. This technology reduces the size, mass, power, and cost of future ultraviolet (UV) detection instruments by using lightweight, low-voltage AlGaN detectors in a hybrid detector/multiplexer configuration. The solar-blind feature eliminates the need for additional visible light rejection and reduces the sensitivity of the system to stray light that can contaminate observations.

  1. Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates

    SciTech Connect

    Bryan, Zachary Bryan, Isaac; Sitar, Zlatko; Collazo, Ramón; Mita, Seiji; Tweedie, James

    2015-06-08

    Since the band ordering in AlGaN has a profound effect on the performance of UVC light emitting diodes (LEDs) and even determines the feasibility of surface emitting lasers, the polarization properties of emitted light from c-oriented AlGaN and AlGaN-based laser structures were studied over the whole composition range, as well as various strain states, quantum confinements, and carrier densities. A quantitative relationship between the theoretical valence band separation, determined using k•p theory, and the experimentally measured degree of polarization is presented. Next to composition, strain was found to have the largest influence on the degree of polarization while all other factors were practically insignificant. The lowest crossover point from the transverse electric to transverse magnetic polarized emission of 245 nm was found for structures pseudomorphically grown on AlN substrates. This finding has significant implications toward the efficiency and feasibility of surface emitting devices below this wavelength.

  2. Fermionic approach to junctions of multiple quantum wires attached to Tomonaga-Luttinger liquid leads

    NASA Astrophysics Data System (ADS)

    Shi, Zheng; Affleck, Ian

    2016-07-01

    Junctions of multiple one-dimensional quantum wires of interacting electrons have received considerable theoretical attention as a basic constituent of quantum circuits. While results have been obtained on these models using bosonization and density-matrix renormalization-group (DMRG) methods, another powerful technique is based on direct perturbation theory in the bulk interactions combined with the renormalization group. This technique has so far only been applied to the case in which finite-length interacting wires are attached to noninteracting Fermi liquid leads. We extend this method to cover the case of infinite-length interacting leads, obtaining results on two- and three-lead junctions in good agreement with previous bosonization and DMRG results.

  3. Tunable Symmetries of Integer and Fractional Quantum Hall Phases in Heterostructures with Multiple Dirac Bands

    NASA Astrophysics Data System (ADS)

    Stepanov, Petr; Barlas, Yafis; Espiritu, Tim; Che, Shi; Watanabe, Kenji; Taniguchi, Takashi; Smirnov, Dmitry; Lau, Chun Ning

    2016-08-01

    The copresence of multiple Dirac bands in few-layer graphene leads to a rich phase diagram in the quantum Hall regime. Using transport measurements, we map the phase diagram of BN-encapsulated A B A -stacked trilayer graphene as a function charge density n , magnetic field B , and interlayer displacement field D , and observe transitions among states with different spin, valley, orbital, and parity polarizations. Such a rich pattern arises from crossings between Landau levels from different subbands, which reflect the evolving symmetries that are tunable in situ. At D =0 , we observe fractional quantum Hall (FQH) states at filling factors 2 /3 and -11 /3 . Unlike those in bilayer graphene, these FQH states are destabilized by a small interlayer potential that hybridizes the different Dirac bands.

  4. Multiple exciton generation in films of electronically coupled PbSe quantum dots.

    PubMed

    Luther, Joseph M; Beard, Matthew C; Song, Qing; Law, Matt; Ellingson, Randy J; Nozik, Arthur J

    2007-06-01

    We study multiple exciton generation (MEG) in electronically coupled films of PbSe quantum dots (QDs) employing ultrafast time-resolved transient absorption spectroscopy. We demonstrate that the MEG efficiency in PbSe does not decrease when the QDs are treated with hydrazine, which has been shown to greatly enhance carrier transport in PbSe QD films by decreasing the interdot distance. The quantum yield is measured and compared to previously reported values for electronically isolated QDs suspended in organic solvents at approximately 4 and 4.5 times the effective band gap. A slightly modified analysis is applied to extract the MEG efficiency and the absorption cross section of each sample at the pump wavelength. We compare the absorption cross sections of our samples to that of bulk PbSe. We find that both the biexciton lifetime and the absorption cross section increase in films relative to isolated QDs in solution. PMID:17530913

  5. The role of the fano resonance in multiple exciton generation in quantum dots

    NASA Astrophysics Data System (ADS)

    Oksengendler, B. L.; Marasulov, M. B.; Nikiforov, V. N.

    2016-02-01

    The phenomenon of interference between two pathways of electron transfer from the valence to the conduction band at a quantum dot is considered. The first way is the conventional "valence band-conduction band" transition, while the second is the transition via a virtual two-electron state on the Tamm level in a quantum dot (QD) followed by the Auger effect, which ejects one electron from the Tamm level to the conduction band. In the case of a coherent addition of these ionization pathways, the Fano resonance can take place, this leading to an increase in the coefficient of photon absorption. This results in increasing internal efficiency of light conversion and can provide a basis for increasing the efficiency of solar cells due to the phenomenon of multiple exciton generation.

  6. Tunable Symmetries of Integer and Fractional Quantum Hall Phases in Heterostructures with Multiple Dirac Bands.

    PubMed

    Stepanov, Petr; Barlas, Yafis; Espiritu, Tim; Che, Shi; Watanabe, Kenji; Taniguchi, Takashi; Smirnov, Dmitry; Lau, Chun Ning

    2016-08-12

    The copresence of multiple Dirac bands in few-layer graphene leads to a rich phase diagram in the quantum Hall regime. Using transport measurements, we map the phase diagram of BN-encapsulated ABA-stacked trilayer graphene as a function charge density n, magnetic field B, and interlayer displacement field D, and observe transitions among states with different spin, valley, orbital, and parity polarizations. Such a rich pattern arises from crossings between Landau levels from different subbands, which reflect the evolving symmetries that are tunable in situ. At D=0, we observe fractional quantum Hall (FQH) states at filling factors 2/3 and -11/3. Unlike those in bilayer graphene, these FQH states are destabilized by a small interlayer potential that hybridizes the different Dirac bands. PMID:27563989

  7. Order-selective multiple-quantum excitation in magic-angle spinning NMR: creating triple-quantum coherences with a trilinear Hamiltonian

    NASA Astrophysics Data System (ADS)

    Edén, Mattias

    2002-12-01

    Order-selective multiple-quantum excitation in magic-angle spinning nuclear magnetic resonance is explored using a class of symmetry-based pulse sequences, denoted S Mχ. Simple rules are presented that aid the design of S Mχ schemes with certain desirable effective Hamiltonians. They are applied to construct sequences generating trilinear effective dipolar Hamiltonians, suitable for efficient excitation of triple-quantum coherences in rotating solids. The new sequences are investigated numerically and demonstrated by 1H experiments on adamantane.

  8. Scale-estimation of quantum coherent energy transport in multiple-minima systems

    PubMed Central

    Farrow, Tristan; Vedral, Vlatko

    2014-01-01

    A generic and intuitive model for coherent energy transport in multiple minima systems coupled to a quantum mechanical bath is shown. Using a simple spin-boson system, we illustrate how a generic donor-acceptor system can be brought into resonance using a narrow band of vibrational modes, such that the transfer efficiency of an electron-hole pair (exciton) is made arbitrarily high. Coherent transport phenomena in nature are of renewed interest since the discovery that a photon captured by the light-harvesting complex (LHC) in photosynthetic organisms can be conveyed to a chemical reaction centre with near-perfect efficiency. Classical explanations of the transfer use stochastic diffusion to model the hopping motion of a photo-excited exciton. This accounts inadequately for the speed and efficiency of the energy transfer measured in a series of recent landmark experiments. Taking a quantum mechanical perspective can help capture the salient features of the efficient part of that transfer. To show the versatility of the model, we extend it to a multiple minima system comprising seven-sites, reminiscent of the widely studied Fenna-Matthews-Olson (FMO) light-harvesting complex. We show that an idealised transport model for multiple minima coupled to a narrow-band phonon can transport energy with arbitrarily high efficiency. PMID:24980547

  9. Polariton Resonances for Ultrastrong Coupling Cavity Optomechanics in GaAs/AlAs Multiple Quantum Wells.

    PubMed

    Jusserand, B; Poddubny, A N; Poshakinskiy, A V; Fainstein, A; Lemaitre, A

    2015-12-31

    Polariton-mediated light-sound interaction is investigated through resonant Brillouin scattering experiments in GaAs/AlAs multiple-quantum wells. Photoelastic coupling enhancement at exciton-polariton resonance reaches 10(5) at 30 K as compared to a typical bulk solid room temperature transparency value. When applied to GaAs based cavity optomechanical nanodevices, this result opens the path to huge displacement sensitivities and to ultrastrong coupling regimes in cavity optomechanics with couplings g(0) in the range of 100 GHz. PMID:26765028

  10. Approaches to Future Generation Photovoltaics and Solar Fuels: Multiple Exciton Generation in Quantum Dots, Quantum Dot Arrays, Molecular Singlet Fission, and Quantum Dot Solar Cells

    SciTech Connect

    Nozik, A. J.; Beard, M. C.; Johnson, J. C.; Hanna, M. C.; Luther, J. M.; Midgett, A.; Semonin, O.; Michel, J.

    2012-01-01

    One potential, long-term approach to more efficient future generation solar cells is to utilize the unique properties of quantum dots (QDs) and unique molecular chromophores to control the relaxation pathways of excited states to produce enhanced conversion efficiency through efficient multiple electron-hole pair generation from single photons . We have observed efficient multiple exciton generation (MEG) in PbSe, PbS, PbTe, and Si QDs and efficient singlet fission (SF) in molecules that satisfy specific requirements for their excited state energy level structure to achieve carrier multiplication. We have studied MEG in close-packed QD arrays where the QDs are electronically coupled in the films and thus exhibit good transport while still maintaining quantization and MEG. We have developed simple, all-inorganic QD solar cells that produce large short-circuit photocurrents and power conversion efficiencies in the 3-5% range via both nanocrystalline Schottky junctions and nanocrystalline p-n junctions. These solar cells also show QYs for photocurrent that exceed 100% in the photon energy regions where MEG is possible; the photocurrent MEG QYs as a function of photon energy match those determined via time-resolved spectroscopy. We have also observed very efficient SF in thin films of molecular crystals of 1,3 diphenylisobenzofuran with quantum yields of 200% at the optimum SF threshold of 2Eg (HOMO-LUMO for S{sub 0}-S{sub 1}), reflecting the creation of two excited triplet states from the first excited singlet state. Various possible configurations for novel solar cells based on MEG in QDs and SF in molecules that could produce high conversion efficiencies will be presented, along with progress in developing such new types of solar cells. Recent analyses of the effect of MEG or SF combined with solar concentration on the conversion efficiency of solar cells will be discussed.

  11. Aluminum incorporation efficiencies in A- and C-plane AlGaN grown by MOVPE

    NASA Astrophysics Data System (ADS)

    Dong-Yue, Han; Hui-Jie, Li; Gui-Juan, Zhao; Hong-Yuan, Wei; Shao-Yan, Yang; Lian-Shan, Wang

    2016-04-01

    The aluminum incorporation efficiencies in nonpolar A-plane and polar C-plane AlGaN films grown by metalorganic vapour phase epitaxy (MOVPE) are investigated. It is found that the aluminum content in A-plane AlGaN film is obviously higher than that in the C-plane sample when the growth temperature is above 1070 °C. The high aluminum incorporation efficiency is beneficial to fabricating deep ultraviolet optoelectronic devices. Moreover, the influences of the gas inlet ratio, the V/III ratio, and the chamber pressure on the aluminum content are studied. The results are important for growing the AlGaN films, especially nonpolar AlGaN epilayers. Project supported by the National Natural Science Foundation of China (Grant Nos. 61504128, 61504129, 61274041, and 11275228), the National Basic Research Program of China (Grant No. 2012CB619305), the National High Technology Research and Development Program of China (Grant Nos. 2014AA032603, 2014AA032609, and 2015AA010801), and the Guangdong Provincial Scientific and Technologic Planning Program, China (Grant No. 2014B010119002).

  12. Analysis of HVPE grown AlGaN layers on honeycomb patterned sapphire

    NASA Astrophysics Data System (ADS)

    Fleischmann, Simon; Mogilatenko, Anna; Hagedorn, Sylvia; Richter, Eberhard; Goran, Daniel; Schäfer, Peter; Zeimer, Ute; Weyers, Markus; Tränkle, Günther

    2015-03-01

    Thick AlxGa1-xN layers were grown by hydride vapor phase epitaxy on hexagonally patterned sapphire substrates. Non-c-planar growth is found inside the etched honeycombs which in part hinders coalescence of the c-plane AlGaN layer growing on top of the ridges. From X-ray diffraction, electron backscatter diffraction and scanning electron microscopy, the orientations of the parasitic crystallites were identified as {11-22} and {1-103} AlGaN growing on m-plane sapphire sidewalls as well as c-plane oriented AlGaN growing on n-plane sidewall facets which are located in the corners of the combs. According to the geometry of parasitic crystallites, it is further observed, that the semipolar growth occurring on sapphire m-plane sidewalls does not hinder the coalescence of c-plane AlGaN growing on top of the ridges, whereas fast propagation of parasitic crystallites nucleating on n-plane sidewall facets leads to delayed layer coalescence.

  13. Gain properties of doped GaAs/AlGaAs multiple quantum well avalanche photodiode structures

    NASA Technical Reports Server (NTRS)

    Menkara, H. M.; Wagner, B. K.; Summers, C. J.

    1995-01-01

    A comprehensive characterization has been made of the static and dynamical response of conventional and multiple quantum well (MQW) avalanche photodiodes (APDs). Comparison of the gain characteristics at low voltages between the MQW and conventional APDs show a direct experimental confirmation of a structure-induced carrier multiplication due to interband impact ionization. Similar studies of the bias dependence of the excess noise characteristics show that the low-voltage gain is primarily due to electron ionization in the MQW-APDS, and to both electron and hole ionization in the conventional APDS. For the doped MQW APDS, the average gain per stage was calculated by comparing gain data with carrier profile measurements, and was found to vary from 1.03 at low bias to 1.09 near avalanche breakdown.

  14. Multiple Quantum NMR Investigations of Structure- Property Relationships in Synthetic and Aged Silicone Elastomers

    SciTech Connect

    Maxwell, R; Gjersing, E; Chinn, S; Herberg, J; Eastwood, E; Bowen, D; Stephens, T

    2006-09-27

    Complex engineering elastomeric materials are often characterized by a complex network structure obtained by crosslinking network chains with multiple chain lengths. Further, these networks are commonly filled with thixotropic reinforcing agents such as SiO{sub 2} or carbon black. Degradation of such materials often occurs via mechanisms that alter the fundamental network structure. In order to understand the effects of modifications of network structure and filler-polymer interaction on component performance, a series of model compounds have been studied by {sup 1}H multiple quantum NMR analysis and traditional mechanical property assessments. The {sup 1}H NMR data provides insight into the distribution of segmental dynamics that reveals insight into the changes in mechanical properties.

  15. Dynamic light-matter coupling across multiple spatial dimensions in a quantum dots-in-a-well heterostructure

    SciTech Connect

    Prasankumar, Rohit P; Taylor, Antoinette J; Chow, W W; Attaluri, R S; Shenoi, R

    2009-01-01

    Semiconductor heterostructures incorporating multiple degrees of spatial confinement have recently attracted substantial interest for photonic applications. One example is the quantum dots-in-a-well (DWELL) heterostructure, consisting of zero-dimensional quantum dots embedded in a two-dimensional quantum well and surrounded by three-dimensional bulk material. This structure offers several advantages over conventional photonic devices while providing a model system for the study of light-matter interactions across multiple spatial dimensions. Here, we use ultrafast differential transmission spectroscopy2 to temporally and spectrally resolve density-dependent carrier dynamics in a DWELL heterostructure. We observe excitation-dependent shifts of the quantum dot energy levels at low densities, while at high densities we observe an anomalous induced absorption at the quantum dot excited state that is correlated to quantum well population dynamics. These studies of density-dependent light-matter interactions across multiple coupled spatial dimensions provide clues to the underlying physics governing quantum dot properties, with important implications for DWELL-based photonic devices.

  16. Effect of stress on the Al composition evolution in AlGaN grown using metal organic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    He, Chenguang; Qin, Zhixin; Xu, Fujun; Zhang, Lisheng; Wang, Jiaming; Hou, Mengjun; Zhang, Shan; Wang, Xinqiang; Ge, Weikun; Shen, Bo

    2016-05-01

    Two series of AlGaN samples with different stresses were designed to investigate the effect of stress on the Al composition. X-ray diffraction reciprocal space mapping (XRD RSM) demonstrated that the AlGaN epilayers with different stresses have large Al composition differences despite the same growth conditions. The largest Al composition difference reached up to 21.3%, which was also confirmed using secondary ion mass spectroscopy (SIMS). This result is attributed to a large stress discrepancy in the AlGaN epilayers. Finally, the dependences of the solid-phase Al composition on the gas-phase Al composition under different stresses were systematically analyzed.

  17. Quantum confinement in semiconductor nanofilms: Optical spectra and multiple exciton generation

    NASA Astrophysics Data System (ADS)

    Khmelinskii, Igor; Makarov, Vladimir I.

    2016-04-01

    We report optical absorption and photoluminescence (PL) spectra of Si and SnO2 nanocrystalline films in the UV-vis-NIR range, featuring discrete bands resulting from transverse quantum confinement, observed in the optical spectra of nanofilms for the first time ever. The film thickness ranged from 3.9 to 12.2 nm, depending on the material. The results are interpreted within the particle-in-a-box model, with infinite walls. The calculated values of the effective electron mass are independent on the film thickness and equal to 0.17mo (Si) and 0.21mo (SnO2), with mo the mass of the free electron. The second calculated model parameter, the quantum number n of the HOMO (valence band), was also thickness-independent: 8.00 (Si) and 7.00 (SnO2). The transitions observed in absorption all start at the level n and correspond to Δn = 1, 2, 3, …. The photoluminescence bands exhibit large Stokes shifts, shifting to higher energies with increased excitation energy. In effect, nanolayers of Si, an indirect-gap semiconductor, behave as a direct-gap semiconductor, as regards the transverse-quantized level system. A prototype Si-SnO2 nanofilm photovoltaic cell demonstrated photoelectron quantum yields achieving 2.5, showing clear evidence of multiple exciton generation, for the first time ever in a working nanofilm device.

  18. Optical Study of Exciton Localization Phenomena in Semimagnetic Semiconductors and Their Multiple Quantum Wells.

    NASA Astrophysics Data System (ADS)

    Zhang, Xi-Cheng

    1986-12-01

    The results of picosecond photomodulation and photoluminescence spectroscopies in novel II-VI semimagnetic semiconductors Cd(,1-x)Mn(,x)Te (x < 0.50) bulk and multiple quantum well (MQW) samples are presented. By studying excitonic emission near the bandgap of semiconductors, it is found that excitons can be confined or localized by alloy potential fluctuations, quantum well confinements, local strain of heterointerfaces and energy self-trapping. Steady-state photoluminescence in undoped CdTe/Cd(,1 -x)Mn(,x)Te MQW samples at low temperature shows intense excitonic emission where their radiative quantum efficiencies are two or three orders of magnitude larger than that of the high quality CdTe bulk samples. Time-resolved photoluminescence shows that the excitons have relatively short lifetime (500 picosecond). High quantum efficiency and short exciton lifetime suggest that the radiative recombination is a dominating factor in the excitonic-decay processes in the MQW samples. In general, excitonic emission energies in CdMnTe MQW samples are lower than the free exciton energies (typically 20-40 meV lower as noted from the reflectance spectra). The behavior of these emissions under an external magnetic field (up to 36 tesla) shows that excitons prefer to be localized at the heterointerfaces rather than at the center of the wells in MQW samples. The kinetics of the free and the heterointerface localized excitons in the Cd(,1-x)Mn(,x)Te/Cd(,1-y)Mn(,y)Te MQW samples have been studied by using a transient photoluminescence technique. Exciton lifetimes have been measured in several samples with various quantum well widths. The trapping time of the free exciton localized at the interface has been observed in the wide quantum well samples. The average energy loss rate of localized excitons has been calculated. The resonance excitation spectra of steady-state and transient luminescence show that the exciton spectra are spatially inhomogeneously broadened. An external magnetic

  19. Upper bounds on the error probabilities and asymptotic error exponents in quantum multiple state discrimination

    SciTech Connect

    Audenaert, Koenraad M. R.; Mosonyi, Milán

    2014-10-01

    We consider the multiple hypothesis testing problem for symmetric quantum state discrimination between r given states σ₁, …, σ{sub r}. By splitting up the overall test into multiple binary tests in various ways we obtain a number of upper bounds on the optimal error probability in terms of the binary error probabilities. These upper bounds allow us to deduce various bounds on the asymptotic error rate, for which it has been hypothesized that it is given by the multi-hypothesis quantum Chernoff bound (or Chernoff divergence) C(σ₁, …, σ{sub r}), as recently introduced by Nussbaum and Szkoła in analogy with Salikhov's classical multi-hypothesis Chernoff bound. This quantity is defined as the minimum of the pairwise binary Chernoff divergences min{sub jquantum Chernoff bound is always achieved.

  20. Addressable single-spin control in multiple quantum dots coupled in series

    NASA Astrophysics Data System (ADS)

    Nakajima, Takashi

    2015-03-01

    Electron spin in semiconductor quantum dots (QDs) is promising building block of quantum computers for its controllability and potential scalability. Recent experiments on GaAs QDs have demonstrated necessary ingredients of universal quantum gate operations: single-spin rotations by electron spin resonance (ESR) which is virtually free from the effect of nuclear spin fluctuation, and pulsed control of two-spin entanglement. The scalability of this architecture, however, has remained to be demonstrated in the real world. In this talk, we will present our recent results on implementing single-spin-based qubits in triple, quadruple, and quintuple QDs based on a series coupled architecture defined by gate electrodes. Deterministic initialization of individual spin states and spin-state readout were performed by the pulse operation of detuning between two neighboring QDs. The spin state was coherently manipulated by ESR, where each spin in different QDs is addressed by the shift of the resonance frequency due to the inhomogeneous magnetic field induced by the micro magnet deposited on top of the QDs. Control of two-spin entanglement was also demonstrated. We will discuss key issues for implementing quantum algorithms based on three or more qubits, including the effect of a nuclear spin bath, single-shot readout fidelity, and tuning of multiple qubit devices. Our approaches to these issues will be also presented. This research is supported by Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST) from JSPS, IARPA project ``Multi-Qubit Coherent Operations'' through Copenhagen University, and Grant-in-Aid for Scientific Research from JSPS.

  1. Theory of multiple quantum dot formation in strained-layer heteroepitaxy

    NASA Astrophysics Data System (ADS)

    Du, Lin; Maroudas, Dimitrios

    2016-07-01

    We develop a theory for the experimentally observed formation of multiple quantum dots (QDs) in strained-layer heteroepitaxy based on surface morphological stability analysis of a coherently strained epitaxial thin film on a crystalline substrate. Using a fully nonlinear model of surface morphological evolution that accounts for a wetting potential contribution to the epitaxial film's free energy as well as surface diffusional anisotropy, we demonstrate the formation of multiple QD patterns in self-consistent dynamical simulations of the evolution of the epitaxial film surface perturbed from its planar state. The simulation predictions are supported by weakly nonlinear analysis of the epitaxial film surface morphological stability. We find that, in addition to the Stranski-Krastanow instability, long-wavelength perturbations from the planar film surface morphology can trigger a nonlinear instability, resulting in the splitting of a single QD into multiple QDs of smaller sizes, and predict the critical wavelength of the film surface perturbation for the onset of the nonlinear tip-splitting instability. The theory provides a fundamental interpretation for the observations of "QD pairs" or "double QDs" and other multiple QDs reported in experimental studies of epitaxial growth of semiconductor strained layers and sets the stage for precise engineering of tunable-size nanoscale surface features in strained-layer heteroepitaxy by exploiting film surface nonlinear, pattern forming phenomena.

  2. Influence of optical polarization on the improvement of light extraction efficiency from reflective scattering structures in AlGaN ultraviolet light-emitting diodes

    SciTech Connect

    Wierer, J. J. Allerman, A. A.; Montaño, I.; Moseley, M. W.

    2014-08-11

    The improvement in light extraction efficiency from reflective scattering structures in AlGaN ultraviolet light-emitting diodes (UVLEDs) emitting at ∼270 nm is shown to be influenced by optical polarization. Three UVLEDs with different reflective scattering structures are investigated and compared to standard UVLEDs without scattering structures. The optical polarization and therefore the direction of light propagation within the various UVLEDs are altered by changes in the quantum well (QW) thickness. The improvement in light extraction efficiency of the UVLEDs with reflective scattering structures increases, compared to the UVLEDs without scattering structures, as the fraction of emitted light propagating parallel to the QW plane increases. Additionally, the light extraction efficiency increases as the average distance to the reflective scattering structures decreases.

  3. Investigation of Photoluminescence and Photocurrent in InGaAsP/InP Strained Multiple Quantum Well Heterostructures

    NASA Technical Reports Server (NTRS)

    Raisky, O. Y.; Wang, W. B.; Alfano, R. R.; Reynolds, C. L., Jr.; Swaminathan, V.

    1997-01-01

    Multiple quantum well InGaAsP/InP p-i-n laser heterostructures with different barrier thicknesses have been investigated using photoluminescence (PL) and photocurrent (PC) measurements. The observed PL spectrum and peak positions are in good agreement with those obtained from transfer matrix calculations. Comparing the measured quantum well PC with calculated carrier escape rates, the photocurrent changes are found to be governed by the temperature dependence of the electron escape time.

  4. Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature.

    PubMed

    Li, K H; Liu, X; Wang, Q; Zhao, S; Mi, Z

    2015-02-01

    Ultraviolet laser radiation has been adopted in a wide range of applications as diverse as water purification, flexible displays, data storage, sterilization, diagnosis and bioagent detection. Success in developing semiconductor-based, compact ultraviolet laser sources, however, has been extremely limited. Here, we report that defect-free disordered AlGaN core-shell nanowire arrays, formed directly on a Si substrate, can be used to achieve highly stable, electrically pumped lasers across the entire ultraviolet AII (UV-AII) band (∼320-340 nm) at low temperatures. The laser threshold is in the range of tens of amps per centimetre squared, which is nearly three orders of magnitude lower than those of previously reported quantum-well lasers. This work also reports the first demonstration of electrically injected AlGaN-based ultraviolet lasers monolithically grown on a Si substrate, and offers a new avenue for achieving semiconductor lasers in the ultraviolet B (UV-B) (280-320 nm) and ultraviolet C (UV-C) (<280 nm) bands. PMID:25599190

  5. Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature

    NASA Astrophysics Data System (ADS)

    Li, K. H.; Liu, X.; Wang, Q.; Zhao, S.; Mi, Z.

    2015-02-01

    Ultraviolet laser radiation has been adopted in a wide range of applications as diverse as water purification, flexible displays, data storage, sterilization, diagnosis and bioagent detection. Success in developing semiconductor-based, compact ultraviolet laser sources, however, has been extremely limited. Here, we report that defect-free disordered AlGaN core-shell nanowire arrays, formed directly on a Si substrate, can be used to achieve highly stable, electrically pumped lasers across the entire ultraviolet AII (UV-AII) band (˜320-340 nm) at low temperatures. The laser threshold is in the range of tens of amps per centimetre squared, which is nearly three orders of magnitude lower than those of previously reported quantum-well lasers. This work also reports the first demonstration of electrically injected AlGaN-based ultraviolet lasers monolithically grown on a Si substrate, and offers a new avenue for achieving semiconductor lasers in the ultraviolet B (UV-B) (280-320 nm) and ultraviolet C (UV-C) (<280 nm) bands.

  6. Optically induced excitonic electroabsorption in a periodically delta-doped InGaAs/GaAs multiple quantum well structure

    NASA Technical Reports Server (NTRS)

    Larsson, A.; Maserjian, J.

    1991-01-01

    Large optically induced Stark shifts have been observed in a periodically delta-doped InGaAs/GaAs multiple quantum well structure. With an excitation intensity of 10 mW/sq cm, an absolute quantum well absorption change of 7000/cm was measured with a corresponding differential absorption change as high as 80 percent. The associated maximum change in the quantum well refractive index is 0.04. This material is promising for device development for all-optical computing and signal processing.

  7. The rigorous stochastic matrix multiplication scheme for the calculations of reduced equilibrium density matrices of open multilevel quantum systems

    NASA Astrophysics Data System (ADS)

    Chen, Xin

    2014-04-01

    Understanding the roles of the temporary and spatial structures of quantum functional noise in open multilevel quantum molecular systems attracts a lot of theoretical interests. I want to establish a rigorous and general framework for functional quantum noises from the constructive and computational perspectives, i.e., how to generate the random trajectories to reproduce the kernel and path ordering of the influence functional with effective Monte Carlo methods for arbitrary spectral densities. This construction approach aims to unify the existing stochastic models to rigorously describe the temporary and spatial structure of Gaussian quantum noises. In this paper, I review the Euclidean imaginary time influence functional and propose the stochastic matrix multiplication scheme to calculate reduced equilibrium density matrices (REDM). In addition, I review and discuss the Feynman-Vernon influence functional according to the Gaussian quadratic integral, particularly its imaginary part which is critical to the rigorous description of the quantum detailed balance. As a result, I establish the conditions under which the influence functional can be interpreted as the average of exponential functional operator over real-valued Gaussian processes for open multilevel quantum systems. I also show the difference between the local and nonlocal phonons within this framework. With the stochastic matrix multiplication scheme, I compare the normalized REDM with the Boltzmann equilibrium distribution for open multilevel quantum systems.

  8. The rigorous stochastic matrix multiplication scheme for the calculations of reduced equilibrium density matrices of open multilevel quantum systems

    SciTech Connect

    Chen, Xin

    2014-04-21

    Understanding the roles of the temporary and spatial structures of quantum functional noise in open multilevel quantum molecular systems attracts a lot of theoretical interests. I want to establish a rigorous and general framework for functional quantum noises from the constructive and computational perspectives, i.e., how to generate the random trajectories to reproduce the kernel and path ordering of the influence functional with effective Monte Carlo methods for arbitrary spectral densities. This construction approach aims to unify the existing stochastic models to rigorously describe the temporary and spatial structure of Gaussian quantum noises. In this paper, I review the Euclidean imaginary time influence functional and propose the stochastic matrix multiplication scheme to calculate reduced equilibrium density matrices (REDM). In addition, I review and discuss the Feynman-Vernon influence functional according to the Gaussian quadratic integral, particularly its imaginary part which is critical to the rigorous description of the quantum detailed balance. As a result, I establish the conditions under which the influence functional can be interpreted as the average of exponential functional operator over real-valued Gaussian processes for open multilevel quantum systems. I also show the difference between the local and nonlocal phonons within this framework. With the stochastic matrix multiplication scheme, I compare the normalized REDM with the Boltzmann equilibrium distribution for open multilevel quantum systems.

  9. Multiple quantum nuclear magnetic resonance of solids: A cautionary note for data analysis and interpretation

    NASA Astrophysics Data System (ADS)

    Lacelle, Serge; Hwang, Son-Jong; Gerstein, Bernard C.

    1993-12-01

    The conventional method of data analysis and interpretation of time-resolved multiple quantum (MQ) nuclear magnetic resonance (NMR) spectra of solids is closely examined. Intensity profiles of experimental 1H MQ NMR spectra of polycrystalline adamantane and hexamethylbenzene serve to test the Gaussian statistical model approach. Consequences of this model are explored with a least-squares fitting procedure, transformation of data to yield linear plots, and a scaling analysis. Non-Gaussian behavior of the MQ NMR spectral intensity profiles, as a function of order of coherences, is demonstrated with all these methods of analysis. A heuristic argument, based on the multiplicative properties of dipolar coupling constants in the equation of motion of the density operator, leads to the prediction of exponentially decaying MQ NMR spectral intensity profiles. Scaling analysis and semilog plots of experimental time-resolved MQ NMR spectra of adamantane and hexamethylbenzene support this deduction. Dynamical scale invariance in the growth process of multiple spin coherences is revealed with this new approach. The validity of spin counting in solids with MQ NMR is discussed in light of the present results.

  10. Multiple quantum nuclear magnetic resonance of solids: A cautionary note for data analysis and interpretation

    SciTech Connect

    Lacelle, S. ); Hwang, S. ); Gerstein, B.C. )

    1993-12-01

    The conventional method of data analysis and interpretation of time-resolved multiple quantum (MQ) nuclear magnetic resonance (NMR) spectra of solids is closely examined. Intensity profiles of experimental [sup 1]H MQ NMR spectra of polycrystalline adamantane and hexamethylbenzene serve to test the Gaussian statistical model approach. Consequences of this model are explored with a least-squares fitting procedure, transformation of data to yield linear plots, and a scaling analysis. Non-Gaussian behavior of the MQ NMR spectral intensity profiles, as a function of order of coherences, is demonstrated with all these methods of analysis. A heuristic argument, based on the multiplicative properties of dipolar coupling constants in the equation of motion of the density operator, leads to the prediction of exponentially decaying MQ NMR spectral intensity profiles. Scaling analysis and semilog plots of experimental time-resolved MQ NMR spectra of adamantane and hexamethylbenzene support this deduction. Dynamical scale invariance in the growth process of multiple spin coherences is revealed with this new approach. The validity of spin counting in solids with MQ NMR is discussed in light of the present results.

  11. Enhanced carrier multiplication in engineered quasi-type-II quantum dots.

    PubMed

    Cirloganu, Claudiu M; Padilha, Lazaro A; Lin, Qianglu; Makarov, Nikolay S; Velizhanin, Kirill A; Luo, Hongmei; Robel, Istvan; Pietryga, Jeffrey M; Klimov, Victor I

    2014-01-01

    One process limiting the performance of solar cells is rapid cooling (thermalization) of hot carriers generated by higher-energy solar photons. In principle, the thermalization losses can be reduced by converting the kinetic energy of energetic carriers into additional electron-hole pairs via carrier multiplication (CM). While being inefficient in bulk semiconductors this process is enhanced in quantum dots, although not sufficiently high to considerably boost the power output of practical devices. Here we demonstrate that thick-shell PbSe/CdSe nanostructures can show almost a fourfold increase in the CM yield over conventional PbSe quantum dots, accompanied by a considerable reduction of the CM threshold. These structures enhance a valence-band CM channel due to effective capture of energetic holes into long-lived shell-localized states. The attainment of the regime of slowed cooling responsible for CM enhancement is indicated by the development of shell-related emission in the visible observed simultaneously with infrared emission from the core. PMID:24938462

  12. Quantization of Relativistic action in multiples of Planck's (constant) Quantum of action

    NASA Astrophysics Data System (ADS)

    Estakhr, Ahmad Reza

    2013-04-01

    Quantization of Relativistic action in multiples of Planck's (constant) Quantum of action. a new Postulate for special relativity theory. The third Postulate of special relativity: Relativistic action is limited to Planck's Quantum of action. S=^tftiLdt=n.h n Z. where the L=-moc^2^amp;-1, is the Lagrangian. action for a point particle in a curved spacetime. S =-Mc ds = -Mc ξ0^ξ1√gμν(x)dx^μ(ξ)dξ dx^ν(ξ)dξ dξ=nh Quantization of Nambu-Goto action: S = -12πα' d^2 σ√X ^2 - X'^2 = nh n Z. point: The action S= - E0 δτ of a relativistic particle is minus the rest energy E0=m0c^2 times the change δτ=τf-τi in proper time. Single relativistic particle When relativistic effects are significant, the action of a point particle of mass ``m'' travelling a world line ``C'' parametrized by the proper time τ is :S = - moc^2 C,τ. If instead, the particle is parametrized by the coordinate time ''t'' of the particle and the coordinate time ranges from t1 to t2, then the action becomes :t1^t2L ,t where the Lagrangian is :L = - moc^2 √1 - v^2c^2.

  13. Enhanced carrier multiplication in engineered quasi-type-II quantum dots

    PubMed Central

    Cirloganu, Claudiu M.; Padilha, Lazaro A.; Lin, Qianglu; Makarov, Nikolay S.; Velizhanin, Kirill A.; Luo, Hongmei; Robel, Istvan; Pietryga, Jeffrey M.; Klimov, Victor I.

    2014-01-01

    One process limiting the performance of solar cells is rapid cooling (thermalization) of hot carriers generated by higher-energy solar photons. In principle, the thermalization losses can be reduced by converting the kinetic energy of energetic carriers into additional electron-hole pairs via carrier multiplication (CM). While being inefficient in bulk semiconductors this process is enhanced in quantum dots, although not sufficiently high to considerably boost the power output of practical devices. Here we demonstrate that thick-shell PbSe/CdSe nanostructures can show almost a fourfold increase in the CM yield over conventional PbSe quantum dots, accompanied by a considerable reduction of the CM threshold. These structures enhance a valence-band CM channel due to effective capture of energetic holes into long-lived shell-localized states. The attainment of the regime of slowed cooling responsible for CM enhancement is indicated by the development of shell-related emission in the visible observed simultaneously with infrared emission from the core. PMID:24938462

  14. Multiple exciton generation and ultrafast exciton dynamics in HgTe colloidal quantum dots.

    PubMed

    Al-Otaify, Ali; Kershaw, Stephen V; Gupta, Shuchi; Rogach, Andrey L; Allan, Guy; Delerue, Christophe; Binks, David J

    2013-10-21

    The investigation of sub-nanosecond exciton dynamics in HgTe colloidal quantum dots using ultrafast transient absorption spectroscopy is reported. The transmittance change spectrum acquired immediately after pumping is dominated by a bleach blue-shifted by ~200-300 nm from the photoluminescent emission band. Comparison with a tight-binding model of the electronic structure allows this feature to be attributed to the filling of band edge states. The form of the pump-induced transmittance transients is dependent on the excitation rate and the rate of sample stirring. For moderate pumping of stirred samples, the transmittance transients are well-described by a mono-exponential decay associated with biexciton recombination, with a lifetime of 49 ± 2 ps. For samples that are strongly-pumped or unstirred, the decay becomes bi-exponential in form, indicating that trap-related recombination has become significant. We also present a new analysis that enables fractional transmittance changes to be related to band edge occupation for samples with arbitrary optical density at the pump wavelength. This allows us to identify the occurrence of multiple exciton generation, which results in a quantum yield of 1.36 ± 0.04 for a photon energy equivalent to 3.1 times the band gap, in good agreement with the results of the model. PMID:23999734

  15. Deep-Etched Photonic Crystal Laser Structure of InP-Based Asymmetric Multiple Quantum Wells

    NASA Astrophysics Data System (ADS)

    Bai, Jiun-Cheng; Chen, Chun-Yang; Chiu, Chien-Liang; Hsin, Jin-Yuan; Lin, Eu-Ying; Lay, Tsong-Sheng

    2009-06-01

    A photonic crystal (PhC) laser structure was fabricated on an InP substrate. The wafer consists of a p-i-n laser epitaxial structure using asymmetric InGaAs/InGaAlAs multiple quantum wells as the active layer. The epistructure has a broadband electroluminescence spectrum centered at an optical wavelength (λ) = 1538 nm with a 3 dB bandwidth = 115 nm. The deep-etched PhC laser structure was achieved by inductively coupled plasma dry etching using a Cl2 + SiCl4 + CH4 mixture. The room-temperature optical spectrum of the PhC laser structure shows three sharp emission peaks at λ= 1505, 1535, and 1551 nm, which correspond to the resonant modes of the PhC.

  16. Phase separation in InGaN/GaN multiple quantum wells

    SciTech Connect

    McCluskey, M.D.; Romano, L.T.; Krusor, B.S.; Bour, D.P.; Johnson, N.M.; Brennan, S.

    1998-04-01

    Evidence is presented for phase separation in In{sub 0.27}Ga{sub 0.73}N/GaN multiple quantum wells. After annealing for 40 h at a temperature of 950{degree}C, the absorption threshold at 2.95 eV is replaced by a broad peak at 2.65 eV. This peak is attributed to the formation of In-rich InGaN phases in the active region. X-ray diffraction measurements show a shift in the diffraction peaks toward GaN, consistent with the formation of an In-poor phase. A diffraction peak corresponding to an In-rich phase is also present in the annealed material. Nanoscale In-rich InGaN precipitates are observed by transmission electron microscopy and energy dispersive x-ray chemical analysis. {copyright} {ital 1998 American Institute of Physics.}

  17. Exciton effects in the index of refraction of multiple quantum wells and superlattices

    NASA Technical Reports Server (NTRS)

    Kahen, K. B.; Leburton, J. P.

    1986-01-01

    Theoretical calculations of the index of refraction of multiple quantum wells and superlattices are presented. The model incorporates both the bound and continuum exciton contributions for the gamma region transitions. In addition, the electronic band structure model has both superlattice and bulk alloy properties. The results indicate that large light-hole masses, i.e., of about 0.23, produced by band mixing effects, are required to account for the experimental data. Furthermore, it is shown that superlattice effects rapidly decrease for energies greater than the confining potential barriers. Overall, the theoretical results are in very good agreement with the experimental data and show the importance of including exciton effects in the index of refraction.

  18. Probing degradation in complex engineering silicones by 1H multiple quantum NMR

    SciTech Connect

    Maxwell, R S; Chinn, S C; Giuliani, J; Herberg, J L

    2007-09-05

    Static {sup 1}H Multiple Quantum Nuclear Magnetic Resonance (MQ NMR) has recently been shown to provide detailed insight into the network structure of pristine silicon based polymer systems. The MQ NMR method characterizes the residual dipolar couplings of the silicon chains that depend on the average molecular weight between physical or chemical constraints. Recently, we have employed MQ NMR methods to characterize the changes in network structure in a series of complex silicone materials subject to numerous degradation mechanisms, including thermal, radiative, and desiccative. For thermal degradation, MQ NMR shows that a combination of crosslinking due to post-curing reactions as well as random chain scissioning reactions occurs. For radiative degradation, the primary mechanisms are via crosslinking both in the network and at the interface between the polymer and the inorganic filler. For samples stored in highly desiccating environments, MQ NMR shows that the average segmental dynamics are slowed due to increased interactions between the filler and the network polymer chains.

  19. Bound states for multiple Dirac-δ wells in space-fractional quantum mechanics

    SciTech Connect

    Tare, Jeffrey D. Esguerra, Jose Perico H.

    2014-01-15

    Using the momentum-space approach, we obtain bound states for multiple Dirac-δ wells in the framework of space-fractional quantum mechanics. Introducing first an attractive Dirac-comb potential, i.e., Dirac comb with strength −g (g > 0), in the space-fractional Schrödinger equation we show that the problem of obtaining eigenenergies of a system with N Dirac-δ wells can be reduced to a problem of obtaining the eigenvalues of an N × N matrix. As an illustration we use the present matrix formulation to derive expressions satisfied by the bound-state energies of N = 1, 2, 3 delta wells. We also obtain the corresponding wave functions and express them in terms of Fox's H-function.

  20. Interface properties of Ga(As,P)/(In,Ga)As strained multiple quantum well structures

    NASA Astrophysics Data System (ADS)

    Samberg, Joshua P.; Alipour, Hamideh M.; Bradshaw, Geoffrey K.; Zachary Carlin, C.; Colter, Peter C.; LeBeau, James M.; El-Masry, N. A.; Bedair, Salah M.

    2013-08-01

    (In,Ga)As/Ga(As,P) multiple quantum wells (MQWs) with GaAs interface layers have been characterized with photoluminescence (PL) and high resolution scanning transmission electron microscopy (STEM). By growing (In,Ga)As/Ga(As,P) MQWs with asymmetric GaAs interfacial layers, we found that phosphorus carry-over had a profound effect on the absorption edge of the (In,Ga)As wells. Evidence for this phosphorus was initially determined via PL and then definitively proven through STEM and energy dispersive x-ray spectroscopy. We show that the phosphorus carry-over can be prevented with sufficiently thick GaAs transition layers. Preliminary results for GaAs p-i-n solar cells utilizing the improved MQWs are presented.

  1. Order dependence of the profile of the intensities of multiple-quantum coherences

    SciTech Connect

    Lundin, A. A.; Zobov, V. E.

    2015-05-15

    A modification of the widespread phenomenological model theory of multiple-quantum (MQ) nuclear magnetic resonance spectra of a single cluster of correlated spins has been developed. In contrast to the mentioned theory, the size distribution of such clusters has been consistently taken into account. To obtain the distribution, solutions for the amplitudes of the expansion in the complete set of orthogonal operators are used. Expressions specifying the dependence of the profile of the intensities of MQ coherences on their number n (order) have been obtained. The total form of the dependence has been evaluated by means of the numerical implementation of the resulting expressions. The asymptotic expressions for large n values (wings of the spectrum) have been obtained analytically by the saddle-point method. It has been shown that the dependence under study has a Gaussian central part and exponential wings. The results obtained are in agreement with the previous calculations for some model systems and existing experimental data.

  2. Passively mode-locked picosecond erbium-doped fiber lasers using multiple quantum well saturable absorbers

    NASA Astrophysics Data System (ADS)

    Hayduk, Michael J.; Krol, Mark F.; Pollock, Clifford R.; Teegarden, Kenneth J.; Wicks, Gary W.; Kaechele, Walter

    1998-07-01

    An experimental study of the mode-locking process in erbium- doped fiber lasers (EDFLs) operating at 1.55 micrometer using multiple quantum well saturable absorbers is described. The self-starting passively mode-locked laser was constructed in a Fabry-Perot configuration using the saturable absorber as the back reflector of the cavity. Picosecond pulses that ranged from 3.1 to 38.8 ps were generated using a series of saturable absorbers. The pulse widths were dependent upon the optical properties of the saturable absorber used as the mode- locking element as well as the dispersive elements contained within the cavity. The output power of the EDFL varied from 0.2 to 6.7 mW and was also dependent upon the saturable absorber used in the cavity.

  3. Characterization of strained-layer and asymmetrically coupled multiple-quantum-well electro-optic modulators

    NASA Astrophysics Data System (ADS)

    Hayduk, Michael J.; Boncek, Raymond K.; Johns, Steven T.; Norton, Douglas A.; Krol, Mark F.; McGinnis, Brian P.; Ten, Sergey Y.; Gibbs, Hyatt M.; Khitrova, Galina; Peyghambarian, Nasser; Sun, Docai C.; Towe, Elias; Leavitt, Richard P.; Pham, John T.

    1994-06-01

    Multiple quantum well (MQW) electro-optic modulators grown on both GaAs and InP substrates have been designed and characterized. Strained-layer (In,Ga)As/GaAs p-i-n diodes grown on (100) GaAs substrates were found to have a differential absorption coefficient of 3.7 X 103 cm-1 for an applied electric field of 6.6 X 104 V/cm. These devices were also grown on (110) GaAs substrates and exhibited polarization sensitive electroabsorption. In addition, InGaAs/InAlAs asymmetric coupled MQWs were designed and fabricated. Real charge transfer kinetics between the coupled MQWs were exhibited by these devices.

  4. Development and use of a quantum dot probe to track multiple yeast strains in mixed culture

    PubMed Central

    Gustafsson, Frida S.; Whiteside, Matthew D.; Jiranek, Vladimir; Durall, Daniel M.

    2014-01-01

    Saccharomyces cerevisiae strains vary in their ability to develop and enhance sensory attributes of alcoholic beverages and are often found growing in mixed strain fermentations; however, quantifying individual strains is challenging due to quantification inaccuracies, low marker longevity, and compromised kinetics. We developed a fluorescent probe, consisting of glutathione molecules conjugated to a quantum dot (QD). Two S. cerevisiae strains were incubated with different coloured probes (QD attached to glutathione molecules, QD-GSH), fermented at multiple ratios, and quantified using confocal microscopy. The QD method was compared with a culture method using microsatellite DNA analysis (MS method). Probes were taken up by an ADP1 encoded transporter, transferred from mother cell to daughter cell, detectable in strains throughout fermentation, and were non-toxic. This resulted in a new quantification method that was more accurate and efficient than the MS method. PMID:25382600

  5. Germanium-tin multiple quantum well on silicon avalanche photodiode for photodetection at two micron wavelength

    NASA Astrophysics Data System (ADS)

    Dong, Yuan; Wang, Wei; Lee, Shuh Ying; Lei, Dian; Gong, Xiao; Khai Loke, Wan; Yoon, Soon-Fatt; Liang, Gengchiau; Yeo, Yee-Chia

    2016-09-01

    We report the demonstration of a germanium-tin multiple quantum well (Ge0.9Sn0.1 MQW)-on-Si avalanche photodiode (APD) for light detection near the 2 μm wavelength range. The measured spectral response covers wavelengths from 1510 to 2003 nm. An optical responsivity of 0.33 A W‑1 is achieved at 2003 nm due to the internal avalanche gain. In addition, a thermal coefficient of breakdown voltage is extracted to be 0.053% K‑1 based on the temperature-dependent dark current measurement. As compared to the traditional 2 μm wavelength APDs, the Si-based APD is promising for its small excess noise factor, less stringent demand on temperature stability, and its compatibility with silicon technology.

  6. Analytical modeling of the resolution of photorefractive multiple quantum well spatial light modulators

    NASA Astrophysics Data System (ADS)

    Abeeluck, A. K.; Garmire, E.; Canoglu, E.

    2000-11-01

    An analytical model that includes lateral drift of photocarriers is developed to explain the experimental resolution of photorefractive multiple quantum well (MQW) devices. The model is in excellent agreement with a phenomenological fit proposed earlier and it follows a small intensity modulation model closely. Charge distributions with and without lateral drift of carriers at the MQW interfaces are assumed in order to calculate the peak diffraction efficiency as a function of grating period. An effective mobility-lifetime product is used to account for the effect of lateral drift in the MQW region. It is shown that good agreement with experiment is obtained when lateral drift is taken into account. Moreover, the model is applied to the study of design tradeoff between resolution, sensitivity, and diffraction efficiency which are all of crucial importance in the performance of practical devices.

  7. Dynamics of quantum Fisher information in a two-level system coupled to multiple bosonic reservoirs

    NASA Astrophysics Data System (ADS)

    Wang, Guo-You; Guo, You-Neng; Zeng, Ke

    2015-11-01

    We consider the optimal parameter estimation for a two-level system coupled to multiple bosonic reservoirs. By using quantum Fisher information (QFI), we investigate the effect of the Markovian reservoirs’ number N on QFI in both weak and strong coupling regimes for a two-level system surrounded by N zero-temperature reservoirs of field modes initially in the vacua. The results show that the dynamics of QFI non-monotonically decays to zero with revival oscillations at some time in the weak coupling regime depending on the reservoirs’ parameters. Furthermore, we also present the relations between the QFI flow, the flows of energy and information, and the sign of the decay rate to gain insight into the physical processes characterizing the dynamics. Project supported by the Hunan Provincial Innovation Foundation for Postgraduate, China (Grant No. CX2014B194) and the Scientific Research Foundation of Hunan Provincial Education Department, China (Grant No. 13C039).

  8. Strain-balanced InGaN/GaN multiple quantum wells

    SciTech Connect

    Van Den Broeck, D. M.; Hosalli, A. M.; Bedair, S. M.; Bharrat, D.; El-Masry, N. A.

    2014-07-21

    InGaN/GaN multiple quantum well (MQW) structures suffer from a high amount of compressive strain in the InGaN wells and the accompanied piezoelectric field resulting in both a blue shift in emission and a reduction of emission intensity. We report the growth of In{sub x}Ga{sub 1−x}N/GaN “strain-balanced” multiple quantum wells (SBMQWs) grown on thick In{sub y}Ga{sub 1−y}N templates for x > y by metal organic chemical vapor deposition. SBMQWs consist of alternating layers of In{sub x}Ga{sub 1−x}N wells and GaN barriers under compressive and tensile stress, respectively, which have been lattice matched to a thick In{sub y}Ga{sub 1−y}N template. Growth of the In{sub y}Ga{sub 1−y}N template is also detailed in order to achieve thick, relaxed In{sub y}Ga{sub 1−y}N grown on GaN without the presence of V-grooves. When compared to conventional In{sub x}Ga{sub 1−x}N/GaN MQWs grown on GaN, the SBMQW structures exhibit longer wavelength emission and higher emission intensity for the same InN mole fraction due to a reduction in the well strain and piezoelectric field. By matching the average lattice constant of the MQW active region to the lattice constant of the In{sub y}Ga{sub 1−y}N template, essentially an infinite number of periods can be grown using the SBMQW growth method without relaxation-related effects. SBMQWs can be utilized to achieve longer wavelength emission in light emitting diodes without the use of excess indium and can be advantageous in addressing the “green gap.”.

  9. Improving the resolution in proton-detected through-space heteronuclear multiple quantum correlation NMR spectroscopy

    NASA Astrophysics Data System (ADS)

    Shen, Ming; Trébosc, J.; Lafon, O.; Pourpoint, F.; Hu, Bingwen; Chen, Qun; Amoureux, J.-P.

    2014-08-01

    Connectivities and proximities between protons and low-gamma nuclei can be probed in solid-state NMR spectroscopy using two-dimensional (2D) proton-detected heteronuclear correlation, through Heteronuclear Multiple Quantum Correlation (HMQC) pulse sequence. The indirect detection via protons dramatically enhances the sensitivity. However, the spectra are often broadened along the indirect F1 dimension by the decay of heteronuclear multiple-quantum coherences under the strong 1H-1H dipolar couplings. This work presents a systematic comparison of the performances of various decoupling schemes during the indirect t1 evolution period of dipolar-mediated HMQC (D-HMQC) experiment. We demonstrate that 1H-1H dipolar decoupling sequences during t1, such as symmetry-based schemes, phase-modulated Lee-Goldburg (PMLG) and Decoupling Using Mind-Boggling Optimization (DUMBO), provide better resolution than continuous wave 1H irradiation. We also report that high resolution requires the preservation of 1H isotropic chemical shifts during the decoupling sequences. When observing indirectly broad spectra presenting numerous spinning sidebands, the D-HMQC sequence must be fully rotor-synchronized owing to the rotor-synchronized indirect sampling and dipolar recoupling sequence employed. In this case, we propose a solution to reduce artefact sidebands caused by the modulation of window delays before and after the decoupling application during the t1 period. Moreover, we show that 1H-1H dipolar decoupling sequence using Smooth Amplitude Modulation (SAM) minimizes the t1-noise. The performances of the various decoupling schemes are assessed via numerical simulations and compared to 2D 1H-{13C} D-HMQC experiments on [U-13C]-L-histidineṡHClṡH2O at various magnetic fields and Magic Angle spinning (MAS) frequencies. Great resolution and sensitivity enhancements resulting from decoupling during t1 period enable the detection of heteronuclear correlation between aliphatic protons and

  10. Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes

    SciTech Connect

    Quan, Zhijue Wang, Li Zheng, Changda; Liu, Junlin; Jiang, Fengyi

    2014-11-14

    The roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well (MQW) light-emitting diodes are investigated by numerical simulation. The simulation results show that V-shaped pits cannot only screen dislocations, but also play an important role on promoting hole injection into the MQWs. It is revealed that the injection of holes into the MQW via the sidewalls of the V-shaped pits is easier than via the flat region, due to the lower polarization charge densities in the sidewall structure with lower In concentration and (10–11)-oriented semi-polar facets.

  11. Iii-V Compound Multiple Quantum Well Based Modulator and Switching Devices.

    NASA Astrophysics Data System (ADS)

    Hong, Songcheol

    A general formalism to study the absorption and photocurrent in multiple quantum well is provided with detailed consideration of quantum confined Stark shift, exciton binding energy, line broadening, tunneling, polarization, and strain effects. Results on variation of exciton size, binding energies and transition energies as a function electric field and well size have been presented. Inhomogeneous line broadening of exciton lines due to interface roughness, alloy disorder and well to well size fluctuation is calculated. The potential of material tailoring by introducing strain for specific optical response is discussed. Theoretical and experimental results on excitonic and band-to-band absorption spectra in strained multi-quantum well structures are shown. I also report on polarization dependent optical absorption for excitonic and interband transitions in lattice matched and strained multiquantum well structures in presence of transverse electric field. Photocurrent in a p-i(MQW)-n diode with monochromatic light is examined with respect to different temperatures and intensities. The negative resistance of I-V characteristic of the p-i-n diode is based on the quantum confined Stark effect of the heavy hole excitonic transition in a multiquantum well. This exciton based photocurrent characteristic allows efficient switching. A general purpose low power optical logic device using the controller-modulator concept bas been proposed and realized. The controller is a heterojunction phototransistor with multiquantum wells in the base-collector depletion region. This allows an amplified photocurrent controlled voltage feedback with low light intensity levels. Detailed analysis of the sensitivity of this device in various modes of operation is studied. Studies are also presented on the cascadability of the device as well as its integrating -thresholding properties. A multiquantum well heterojunction bipolar transistor (MHBT), which has N^+ -p^+-i(MQW)-N structure has been

  12. Influence of substrate miscut angle on surface morphology and luminescence properties of AlGaN

    SciTech Connect

    Kusch, Gunnar Edwards, Paul R.; Bruckbauer, Jochen; Martin, Robert W.; Li, Haoning; Parbrook, Peter J.; Sadler, Thomas C.

    2014-03-03

    The influence of substrate miscut on Al{sub 0.5}Ga{sub 0.5} N layers was investigated using cathodoluminescence (CL) hyperspectral imaging and secondary electron imaging in an environmental scanning electron microscope. The samples were also characterized using atomic force microscopy and high resolution X-ray diffraction. It was found that small changes in substrate miscut have a strong influence on the morphology and luminescence properties of the AlGaN layers. Two different types are resolved. For low miscut angle, a crack-free morphology consisting of randomly sized domains is observed, between which there are notable shifts in the AlGaN near band edge emission energy. For high miscut angle, a morphology with step bunches and compositional inhomogeneities along the step bunches, evidenced by an additional CL peak along the step bunches, are observed.

  13. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect

    Kuppulingam, B. Singh, Shubra Baskar, K.

    2014-04-24

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  14. Bias Selectable Dual Band AlGaN Ultra-violet Detectors

    NASA Technical Reports Server (NTRS)

    Yan, Feng; Miko, Laddawan; Franz, David; Guan, Bing; Stahle, Carl M.

    2007-01-01

    Bias selectable dual band AlGaN ultra-violet (UV) detectors, which can separate UV-A and UV-B using one detector in the same pixel by bias switching, have been designed, fabricated and characterized. A two-terminal n-p-n photo-transistor-like structure was used. When a forward bias is applied between the top electrode and the bottom electrode, the detectors can successfully detect W-A and reject UV-B. Under reverse bias, they can detect UV-B and reject UV-A. The proof of concept design shows that it is feasible to fabricate high performance dual-band UV detectors based on the current AlGaN material growth and fabrication technologies.

  15. Optical Properties of GaN Nanorods Containing a Single or Multiple InGaN Quantum Wells

    NASA Astrophysics Data System (ADS)

    Zhuang, Yi D.; Lis, Szymon; Bruckbauer, Jochen; O'Kane, Simon E. J.; Shields, Philip A.; Edwards, Paul R.; Sarma, Jayanta; Martin, Robert W.; Allsopp, Duncan W. E.

    2013-08-01

    Measurements of light emission from GaN nanorods of diameter between 80 and 350 nm, containing either a three-well multiple InGaN quantum well or a single quantum well, have been performed by photoluminescence (PL) and cathodoluminescence (CL) hyperspectral imaging. The PL underwent a Stark shift to the blue as the nanorod diameter was reduced, indicating substantial relaxation of the compressive strain in the quantum wells. The intensity of the nanorod emission per unit area can exceed that of the planar starting material. The CL measurements revealed that the wavelength of the quantum well emission varied with radial position in the nanorod. Simulations by a modal expansion method revealed that the light extraction efficiency varies with radial position and the variation is dependent on nanorod diameter. Finite difference time domain simulations showed that Bloch mode formation in the buffer layer below the nanorods impacts on the light extraction.

  16. Use of external cavity quantum cascade laser compliance voltage in real-time trace gas sensing of multiple chemicals

    SciTech Connect

    Phillips, Mark C.; Taubman, Matthew S.; Kriesel, Jason M.

    2015-02-08

    We describe a prototype trace gas sensor designed for real-time detection of multiple chemicals. The sensor uses an external cavity quantum cascade laser (ECQCL) swept over its tuning range of 940-1075 cm-1 (9.30-10.7 µm) at a 10 Hz repetition rate.

  17. Growth of AlGaN epilayers related gas-phase reactions using TPIS-MOCVD

    NASA Astrophysics Data System (ADS)

    Kim, Sunwoon; Seo, Junho; Lee, Kyuhan; Lee, Haeseok; Park, Keunseop; Kim, Younghoon; Kim, Chang-Soo

    2002-11-01

    AlGaN epilayers on GaN/sapphire were successfully grown under various growth conditions using a thermally pre-cracked ion-supplied metalorganic chemical vapor deposition. The Al composition in the solid was affected by the gas-phase parasitic reaction between NH 3 and trimethylaluminum (TMAl). As the operating pressure decreased, the Al composition in the solid increased over the ideal incorporation efficiency. This is due to a scavenging effect and a site-blocking effect. As the TMAl flow rate increased with fixed flow rates of NH 3 and trimethylgallium (TMGa), the Al concentration in the solid increased but started to saturate. As the TMGa flow rate decreased, the solid Al composition increased linearly, which means different parasitic reactions between TMGa:NH 3 and TMAl:NH 3. In addition, we found that the separating plate that was inserted to the reactor in front of the heated susceptor to separate ammonia gas flow from MO source input played an important role in the AlGaN growth. Particularly, the separating plate was more attractive under high operating pressure. When it was inserted, a white crystalline solid formed by the adduct (TMAl:NH 3) of parasitic reaction in the gas phase disappeared. It also increased the Al concentration in the solid. SEM images of AlGaN epilayer's surface showed many small islands due to the lack of surface mobility of adatoms.

  18. Strain and defects in Si-doped (Al)GaN epitaxial layers

    NASA Astrophysics Data System (ADS)

    Forghani, Kamran; Schade, Lukas; Schwarz, Ulrich T.; Lipski, Frank; Klein, Oliver; Kaiser, Ute; Scholz, Ferdinand

    2012-11-01

    Si is the most common dopant in (Al)GaN based devices acting as a donor. It has been observed that Si induces tensile strain in (Al)GaN films, which leads to an increasing tendency for cracking of such films with the increase of Si content and/or the increase of Al content. Based on x-ray investigations, the Si-doped films have a larger in-plane lattice constant than their undoped buffer layers, indicating involvement of a mechanism other than the change of lattice constants expected from an alloying effect. In this work, we present a model about Si dislocation interaction while debating other proposed models in the literature. According to our model, Si atoms are attracted to the strain dipole of edge-type dislocations in (Al)GaN films. It is expected that Si is more incorporated on that side of the dislocation, which is under compression leading to the formation of off-balanced dipoles with reduced compressive component. In response to such off-balanced dipoles—appearing as tensile dominant strain dipoles—the dislocation lines climb in order to accommodate the excess tensile strain. However, this dislocation climb mechanism is hindered by forces exerted by vacancies created due to the climb process. Accordingly, we have observed a lower strain level in our Si doped layers when they contain fewer dislocations. These findings were further supported by x-ray diffraction, transmission electron microscopy, and micro-photoluminescence investigations.

  19. Relaxation of compressively strained AlGaN by inclined threading dislocations.

    SciTech Connect

    Follstaedt, David Martin; Lee, Stephen Roger; Crawford, Mary Hagerott; Provencio, Paula Polyak; Allerman, Andrew Alan; Floro, Jerrold Anthony

    2005-06-01

    Transmission electron microscopy and x-ray diffraction were used to assess the microstructure and strain of Al{sub x}Ga{sub 1?x}N(x = 0.61-0.64) layers grown on AlN. The compressively-strained AlGaN is partially relaxed by inclined threading dislocations, similar to observations on Si-doped AlGaN by P. Cantu, F. Wu, P. Waltereit, S. Keller, A. E. Romanov, U. K. Mishra, S. P. DenBaars, and J. S. Speck [Appl. Phys. Lett. 83, 674 (2003) ]; however, in our material, the dislocations bend before the introduction of any Si. The bending may be initiated by the greater lattice mismatch or the lower dislocation density of our material, but the presence of Si is not necessarily required. The relaxation by inclined dislocations is quantitatively accounted for with the model of A. E. Romanov and J. S. Speck [Appl. Phys. Lett. 83, 2569 (2003)], and we demonstrate the predicted linear dependence of relaxation on layer thickness. Notably, such relaxation was not found in tensile strained AlGaN grown on GaN [J. A. Floro, D. M. Follstaedt, P. Provencio, S. J. Hearne, and S. R. Lee, J. Appl. Phys. 96, 7087 (2004)], even though the same mechanism appears applicable.

  20. High-efficiency blue LEDs with thin AlGaN interlayers in InGaN/GaN MQWs grown on Si (111) substrates

    NASA Astrophysics Data System (ADS)

    Kimura, Shigeya; Yoshida, Hisashi; Ito, Toshihide; Okada, Aoi; Uesugi, Kenjiro; Nunoue, Shinya

    2016-02-01

    We demonstrate high-efficiency blue light-emitting diodes (LEDs) with thin AlGaN interlayers in InGaN/GaN multiquantum wells (MQWs) grown on Si (111) substrates. The peak external quantum efficiency (EQE) ηEQE of 82% at room temperature and the hot/cold factor (HCF) of 94% have been obtained by using the functional thin AlGaN interlayers in the MQWs in addition to reducing threading dislocation densities (TDDs) in the blue LEDs. An HCF is defined as ηEQE(85°C)/ηEQE(25°C). The blue LED structures were grown by metal-organic chemical vapor deposition on Si (111) substrates. The MQWs applied as an active layer have 8- pairs of InGaN/AlyGa1-yN/GaN (0<=y<=1) heterostructures. Thinfilm LEDs were fabricated by removing the Si (111) substrates from the grown layers. It is observed by high-resolution transmission electron microscopy and three-dimensional atom probe analysis that the 1 nm-thick AlyGa1-yN interlayers, whose Al content is y=0.3 or less, are continuously formed. EQE and the HCFs of the LEDs with thin Al0.15Ga0.85N interlayers are enhanced compared with those of the samples without the interlayers in the low-current-density region. We consider that the enhancement is due to both the reduction of the nonradiative recombination centers and the increase of the radiative recombination rate mediated by the strain-induced hole carriers indicated by the simulation of the energy band diagram.

  1. Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

    SciTech Connect

    Malinverni, M. Lamy, J.-M.; Martin, D.; Grandjean, N.; Feltin, E.; Dorsaz, J.; Castiglia, A.; Rossetti, M.; Duelk, M.; Vélez, C.

    2014-12-15

    We demonstrate state-of-the-art p-type (Al)GaN layers deposited at low temperature (740 °C) by ammonia molecular beam epitaxy (NH{sub 3}-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGaN quantum well active region. Typical p-type GaN resistivities and contact resistances are 0.4 Ω cm and 5 × 10{sup −4} Ω cm{sup 2}, respectively. As a test bed, we fabricated a hybrid laser structure emitting at 400 nm combining n-type AlGaN cladding and InGaN active region grown by metal-organic vapor phase epitaxy, with the p-doped waveguide and cladding layers grown by NH{sub 3}-MBE. Single-mode ridge-waveguide LD exhibits a threshold voltage as low as 4.3 V for an 800 × 2 μm{sup 2} ridge dimension and a threshold current density of ∼5 kA cm{sup −2} in continuous wave operation. The series resistance of the device is 6 Ω and the resistivity is 1.5 Ω cm, confirming thereby the excellent electrical properties of p-type Al{sub 0.06}Ga{sub 0.94}N:Mg despite the low growth temperature.

  2. Phase control of Goos-Hänchen shift via biexciton coherence in a multiple quantum well

    NASA Astrophysics Data System (ADS)

    Asadpour, Seyyed Hossein; Nasehi, Rajab; Soleimani, H. Rahimpour; Mahmoudi, M.

    2015-09-01

    The behavior of the Goos-Hänchen (GH) shifts of the reflected and transmitted probe and signal pulses through a cavity containing four-level GaAs/AlGaAs multiple quantum wells with 15 periods of 17.5 nm GaAs wells and 15-nm Al0.3Ga0.7As barriers is theoretically discussed. The biexciton coherence set up by two coupling fields can induce the destructive interference to control the absorption and gain properties of probe field under appropriate conditions. It is realized that for the specific values of the intensities and the relative phase of applied fields, the simultaneous negative or positive GH shift in the transmitted and reflected light beam can be obtained via amplification in a probe light. It is found that by adjusting the controllable parameters, the GH shifts can be switched between the large positive and negative values in the medium. Moreover, the effect of exciton spin relaxation on the GH shift has also been discussed. We find that the exciton spin relaxation can manipulate the behavior of GH shift in the reflected and transmitted probe beam through the cavity. We show that by controlling the incident angles of probe beam and under certain conditions, the GH shifts in the reflected and transmitted probe beams can become either negative or positive corresponding to the superluminal or subluminal light propagation. Our proposed model may supply a new prospect in technological applications for the light amplification in optical sensors working on quantum coherence impacts in solid-state systems.

  3. A broadband LED on the hybrid silicon platform using multiple die bonding and quantum well intermixing

    NASA Astrophysics Data System (ADS)

    De Groote, Andreas

    Bandwidth has been one of the drivers in photonic sources and will very likely remain one of them. Higher bandwidth sources would not only be useful in data and telecommunication but also in other fields such as gas sensing and optical coherence tomography, a microscopic technique. As silicon photonics offers a great prospect with the supreme CMOS technology, we focused on a broadband source on silicon. To circumvent the indirect silicon band gap, InP epitaxial stacks were bonded. More precisely, two stack were bonded, each of which were subjected to quantum well intermixing (QWI). This way, four different band gaps were created. The fabrication process consists of three stages: QWI, multiple die bonding and the post bond process. Problems were identified and addressed in each of them. Most prominent were phosphorus evaporation during the thermal anneal in QWI, for which a dielectric cap layer should be used and the size and protection of the gap region in between the two bonded dies, for which a protective oxide was introduced. The laser structures on the die at 1540nm were comparable to other devices from our group. The intermixed devices had a higher threshold, indicating a limited but noticeable damage to the quantum wells. The other die did not produce lasers because of a bad P contact. By combining the different band gaps - 1540nm, 1460nm, 1380nm and 1300nm - in a series manner approximately 300nm of 3dB bandwidth was achieved. When organizing the band gaps in the order given, a one directional devices is formed which output at the right. Note that the light at 1540nm will travel through all the other transparent regions. We noticed that the longest wavelengths were not measured, probably because of highly asymmetric below band gap gain from the following section. Nonetheless, 300nm of 3dB bandwidth is a result most other broadbanding techniques are only able to achieve after thorough optimizing of all parameters.

  4. Long term operation of high quantum efficiency GaAs(Cs,O) photocathodes using multiple recleaning by atomic hydrogen

    NASA Astrophysics Data System (ADS)

    Orlov, D. A.; Krantz, C.; Wolf, A.; Jaroshevich, A. S.; Kosolobov, S. N.; Scheibler, H. E.; Terekhov, A. S.

    2009-09-01

    Atomic hydrogen, produced by thermal dissociation of H2 molecules inside a hot tungsten capillary, is shown to be an efficient tool for multiple recleaning of degraded surfaces of high quantum efficiency transmission-mode GaAs photocathodes within an ultrahigh vacuum (UHV) multichamber photoelectron gun. Ultraviolet quantum yield photoemission spectroscopy has been used to study the removal of surface pollutants and the degraded (Cs,O)-activation layer during the cleaning procedure. For photocathodes grown by the liquid-phase epitaxy technique, the quantum efficiency is found to be stable at about 20% over a large number of atomic hydrogen cleaning cycles. A slow degradation of the quantum efficiency is observed for photocathodes grown by metal-organic chemical vapor deposition, although they reached a higher initial quantum efficiency of about 30%-35%. Study of the spatial distributions of photoluminescence intensity on these photocathodes proved that this overall degradation is likely due to insertion of a dislocation network into the mechanically strained photocathode heterostructures during multiple heating cycles and is not due to the atomic hydrogen treatment itself.

  5. Study of multiple InAs/GaAs quantum-well structures by electroreflectance spectroscopy

    SciTech Connect

    Bolshakov, A. S. Chaldyshev, V. V. Babichev, A. V.; Kudryashov, D. A.; Gudovskikh, A. S.; Morozov, I. A.; Sobolev, M. S.; Nikitina, E. V.

    2015-11-15

    A periodic Bragg heterostructure with three ultrathin InAs/GaAs quantum wells in a period is fabricated and studied. The splitting energy of exciton transitions in quantum wells is determined by the electroreflectance- spectroscopy method and numerical quantum-mechanical calculation. The significant influence of interference effects on individual peak areas in the electroreflectance spectrum is detected.

  6. Sorting photon wave packets using temporal-mode interferometry based on multiple-stage quantum frequency conversion

    NASA Astrophysics Data System (ADS)

    Reddy, D. V.; Raymer, M. G.; McKinstrie, C. J.

    2015-01-01

    All classical and quantum technologies that encode in and retrieve information from optical fields rely on the ability to selectively manipulate orthogonal field modes of light. Such manipulation can be achieved with high selectivity for polarization modes and transverse-spatial modes. For the time-frequency degree of freedom, this could efficiently be achieved for a limited choice of approximately orthogonal modes, i.e., nonoverlapping bins in time or frequency. We recently proposed a method that surmounts the selectivity barrier for sorting arbitrary orthogonal temporal modes [Opt. Lett. 39, 2924 (2014)., 10.1364/OL.39.002924] using cascaded interferometric quantum frequency conversion in nonlinear optical media. We call this method temporal-mode interferometry, as it has a close resemblance to the well-known separated-fields atomic interferometry method introduced by Ramsey. The method has important implications for quantum memories, quantum dense coding, quantum teleportation, and quantum key distribution. Here we explore the inner workings of the method in detail, and extend it to multiple stages with a concurrent asymptotic convergence of temporal-mode selectivity to unity. We also complete our analysis of pump-chirp compensation to counter pump-induced nonlinear phase modulation in four-wave mixing implementations.

  7. Thermal degradation in a trimodal PDMS network by 1H Multiple Quantum NMR

    SciTech Connect

    Giuliani, J R; Gjersing, E L; Chinn, S C; Jones, T V; Wilson, T S; Alviso, C T; Herberg, J L; Pearson, M A; Maxwell, R S

    2007-06-06

    Thermal degradation of a filled, crosslinked siloxane material synthesized from PDMS chains of three different average molecular weights and with two different crosslinking species has been studied by {sup 1}H Multiple Quantum (MQ) NMR methods. Multiple domains of polymer chains were detected by MQ NMR exhibiting Residual Dipolar Coupling (<{Omega}{sub d}>) values of 200 Hz and 600 Hz, corresponding to chains with high average molecular weight between crosslinks and chains with low average molecular weight between crosslinks or near the multifunctional crosslinking sites. Characterization of the <{Omega}{sub d}> values and changes in <{Omega}{sub d}> distributions present in the material were studied as a function of time at 250 C and indicates significant time dependent degradation. For the domains with low <{Omega}{sub d}>, a broadening in the distribution was observed with aging time. For the domain with high <{Omega}{sub d}>, increases in both the mean <{Omega}{sub d}> and the width in <{Omega}{sub d}> were observed with increasing aging time. Isothermal Thermal Gravimetric Analysis (TGA) reveals a 3% decrease in weight over 20 hours of aging at 250 C. Degraded samples also were analyzed by traditional solid state {sup 1}H NMR techniques and offgassing products were identified by Solid Phase MicroExtraction followed by Gas Chromatography-Mass Spectrometry (SPME GC-MS). The results, which will be discussed here, suggest that thermal degradation proceeds by complex competition between oxidative chain scissioning and post-curing crosslinking that both contribute to embrittlement.

  8. Quasiequilibrium states in thermotropic liquid crystals studied by multiple-quantum NMR

    NASA Astrophysics Data System (ADS)

    Buljubasich, L.; Monti, G. A.; Acosta, R. H.; Bonin, C. J.; González, C. E.; Zamar, R. C.

    2009-01-01

    Previous work showed that by means of the Jeener-Broekaert (JB) experiment, two quasiequilibrium states can be selectively prepared in the proton spin system of thermotropic nematic liquid crystals (LCs) in a strong magnetic field. The similarity of the experimental results obtained in a variety of LC in a broad Larmor frequency range, with crystal hydrates, supports the assumption that also in LC the two spin reservoirs, into which the Zeeman order is transferred, originate in the dipolar energy and that they are associated with a separation in energy scales: A constant of motion related to the stronger dipolar interactions (S), and a second one (W) corresponding to the secular part of the weaker dipolar interactions with regard to the Zeeman and the strong dipolar part. We study the nature of these quasi-invariants in nematic 5CB (4'-pentyl-4-biphenyl-carbonitrile) and measure their relaxation times by encoding the multiple-quantum coherences of the states following the JB pulse pair on two orthogonal bases, Z and X. The experiments were also performed in powder adamantane at 301K which is used as a reference compound having only one dipolar quasi-invariant. We show that the evolution of the quantum states during the buildup of the quasiequilibrium state in 5CB prepared under the S condition is similar to the case of powder adamantane and that their quasiequilibrium density operators have the same tensor structure. In contrast, the second constant of motion, whose explicit operator form is not known, involves a richer composition of multiple-quantum coherences of even order on the X basis, in consistency with the truncation inherent in its definition. We exploited the exclusive presence of coherences of ±4,±6,±8, besides 0 and ±2 under the W condition to measure the spin-lattice relaxation time TW accurately, so avoiding experimental difficulties that usually impair dipolar order relaxation measurement such as Zeeman contamination at high fields and also

  9. Investigation of enzymatic C-P bond formation using multiple quantum HCP nuclear magnetic resonance spectroscopy.

    PubMed

    Hu, Kaifeng; Werner, Williard J; Allen, Kylie D; Wang, Susan C

    2015-04-01

    The biochemical mechanism for the formation of the C-P-C bond sequence found in l-phosphinothricin, a natural product with antibiotic and herbicidal activity, remains unclear. To obtain further insight into the catalytic mechanism of PhpK, the P-methyltransferase responsible for the formation of the second C-P bond in l-phosphinothricin, we utilized a combination of stable isotopes and two-dimensional nuclear magnetic resonance spectroscopy. Exploiting the newly emerged Bruker QCI probe (Bruker Corp.), we specifically designed and ran a (13) C-(31) P multiple quantum (1) H-(13) C-(31) P (HCP) experiment in (1) H-(31) P two-dimensional mode directly on a PhpK-catalyzed reaction mixture using (13) CH3 -labeled methylcobalamin as the methyl group donor. This method is particularly advantageous because minimal sample purification is needed to maximize product visualization. The observed 3:1:1:3 multiplet specifically and unequivocally illustrates direct bond formation between (13) CH3 and (31) P. Related nuclear magnetic resonance experiments based upon these principles may be designed for the study of enzymatic and/or synthetic chemical reaction mechanisms. PMID:25594737

  10. On multiple component detection in molecular plasmas using cw external-cavity quantum cascade infrared lasers

    NASA Astrophysics Data System (ADS)

    Lopatik, Dmitry; Lang, Norbert; Macherius, Uwe; Zimmermann, Henrik; Roepcke, Juergen

    2012-10-01

    Several cw external cavity quantum cascade lasers (EC-QCLs) have been tested as radiation sources for an absorption spectrometer focused on the analysis of molecular plasmas. Based on the wide spectral tunability of EC-QCLs multiple species detection is demonstrated in low pressure Ar/N2 MW plasmas containing CH4 as hydrocarbon precursor. Using the direct absorption technique the evolution of the concentrations of CH4, C2H2, HCN and H2O has been monitored depending on the discharge conditions (p= 0.5 mbar, f= 2.45 GHz) in a planar MW plasma reactor. The concentrations were found to be in the range of 10 ^11 -- 10 ^14 molecules cm-3. Based on the profiles of absorption lines the gas temperature Tg has been calculated in dependence on the discharge power. Changing the discharge power from 0.2 kW to 1 kW leads to an increase of Tg from 400 to 700 K. The typical spectral line width of the EC-QCLs under the study was about 30 MHz. Varying the power values of an EC-QCL for direct absorption measurements at low pressure conditions no saturation effects in determining the concentrations of CH4 and C2H2 could be found under the used conditions.

  11. Barrier potential design criteria in multiple-quantum-well-based solar-cell structures

    NASA Technical Reports Server (NTRS)

    Mohaidat, Jihad M.; Shum, Kai; Wang, W. B.; Alfano, R. R.

    1994-01-01

    The barrier potential design criteria in multiple-quantum-well (MQW)-based solar-cell structures is reported for the purpose of achieving maximum efficiency. The time-dependent short-circuit current density at the collector side of various MQW solar-cell structures under resonant condition was numerically calculated using the time-dependent Schroedinger equation. The energy efficiency of solar cells based on the InAs/Ga(y)In(1-y)As and GaAs/Al(x)Ga(1-x)As MQW structues were compared when carriers are excited at a particular solar-energy band. Using InAs/Ga(y)In(1-y)As MQW structures it is found that a maximum energy efficiency can be achieved if the structure is designed with barrier potential of about 450 meV. The efficiency is found to decline linearly as the barrier potential increases for GaAs/Al(x)Ga(1-x)As MQW-structure-based solar cells.

  12. A statistical approach for analyzing the development of 1H multiple-quantum coherence in solids.

    PubMed

    Mogami, Yuuki; Noda, Yasuto; Ishikawa, Hiroto; Takegoshi, K

    2013-05-21

    A novel statistical approach for analyzing (1)H multiple-quantum (MQ) spin dynamics in so-called spin-counting solid-state NMR experiments is presented. The statistical approach is based on the percolation theory with Monte Carlo methods and is examined by applying it to the experimental results of three solid samples having unique hydrogen arrangement for 1-3 dimensions: the n-alkane/d-urea inclusion complex as a one-dimensional (1D) system, whose (1)H nuclei align approximately in 1D, and magnesium hydroxide and adamantane as a two-dimensional (2D) and a three-dimensional (3D) system, respectively. Four lattice models, linear, honeycomb, square and cubic, are used to represent the (1)H arrangement of the three samples. It is shown that the MQ dynamics in adamantane is consistent with that calculated using the cubic lattice and that in Mg(OH)2 with that calculated using the honeycomb and the square lattices. For n-C20H42/d-urea, these 4 lattice models fail to express its result. It is shown that a more realistic model representing the (1)H arrangement of n-C20H42/d-urea can describe the result. The present approach can thus be used to determine (1)H arrangement in solids. PMID:23580152

  13. Investigation of enzymatic C–P bond formation using multiple quantum HCP nuclear magnetic resonance spectroscopy

    PubMed Central

    Hu, Kaifeng; Werner, Williard J.; Allen, Kylie D.; Wang, Susan C.

    2015-01-01

    The biochemical mechanism for the formation of the C–P–C bond sequence found in L-phosphinothricin, a natural product with antibiotic and herbicidal activity, remains unclear. To obtain further insight into the catalytic mechanism of PhpK, the P-methyltransferase responsible for the formation of the second C–P bond in L-phosphinothricin, we utilized a combination of stable isotopes and two-dimensional nuclear magnetic resonance spectroscopy. Exploiting the newly emerged Bruker QCI probe (Bruker Corp.), we specifically designed and ran a 13C-31P multiple quantum 1H-13C-31P (HCP) experiment in 1H-31P two-dimensional mode directly on a PhpK-catalyzed reaction mixture using 13CH3-labeled methylcobalamin as the methyl group donor. This method is particularly advantageous because minimal sample purification is needed to maximize product visualization. The observed 3:1:1:3 multiplet specifically and unequivocally illustrates direct bond formation between 13CH3 and 31P. Related nuclear magnetic resonance experiments based upon these principles may be designed for the study of enzymatic and/or synthetic chemical reaction mechanisms. PMID:25594737

  14. Transition in AlGalnP heterostructures with multiple quantum wells during fast neutron radiation

    NASA Astrophysics Data System (ADS)

    Gradoboev, A. V.; Orlova, K. N.

    2015-04-01

    Radiation exposure causes degradation of semiconductors' structures as well as different semiconductors based on these structures. The purpose of the research work is to study transitions in AlGaInP heterostructures with multiple quantum wells during fast neutron radiation. Objects of the research are 590 nm and 630 nm LEDs based on AlGaInP heterostructures. It is proved that LEDs' radiant power decrease occurs within three periods: during the first period radiant power decrease is caused by radiation stimulated structural adjustment of a primary defect structure; during the second period the decrease is results from radiative defects introduction; with further enhancement of radiation exposure the second period develops into the third period, where LEDs evolves into the mode of electrons low injection into an active region. Empirical relations explain radiant power changes within each period are presented. Region of transitions between the first and the second periods that cause radiant power partial recovery are specified. Transitions occur both directly and indirectly for heterostructures. Potential causes of transitions occurrence are being discussed.

  15. Low temperature photoluminescence as a tool to measure strain and relaxation effects in multiple quantum wells.

    NASA Astrophysics Data System (ADS)

    Ait-Ouali, Abderrahmane; Yip, Raymond Y.-F.; Brebner, John; Masut, Remo A.

    1997-03-01

    Low temperature photoluminescence studies have been performed on a series of InAs(x)P(1-x)/InP strained-layer multiple quantum wells grown by low pressure metal -organic vapor phase epitaxy. The As content, x, in these samples ranges from 4.426.4at low concentrations and partially-relaxed at the higher end of the range. The temperature and excitation intensity evolution of the spectra and the shape of the transition at low temperature are consistent with the model for the recombination of excitons localized by potential fluctuations [as proposed by Ouadjaout and Marfaing, Phys. Rev. B46, 7908 (1992)]. This has been used to fit precisely the photoluminescence spectra. The evolution of the model parameters allows us to detect the onset of strain relaxation. The results are consistent with detailed structural analyses of these samples performed using X-ray diffraction and transmission electron microscopy [R. Y.-F. Yip et al., J. Appl. Phys. (in press)].

  16. Germanium–tin interdiffusion in strained Ge/GeSn multiple-quantum-well structure

    NASA Astrophysics Data System (ADS)

    Wang, Wei; Dong, Yuan; Zhou, Qian; Tok, Eng Soon; Yeo, Yee-Chia

    2016-06-01

    The thermal stability and germanium–tin (Ge–Sn) interdiffusion properties were studied in epitaxial Ge/GeSn multiple-quantum-well (MQW) structure. No obvious interdiffusion was observed for annealing temperatures of 300 °C or below, while observable interdiffusion occurred for annealing temperatures of 380 °C and above. High-resolution x-ray diffraction was used to obtain the interdiffusion coefficient by analyzing the decrease rate of Ge/GeSn periodic satellite peaks. The interdiffusion coefficient is much higher, and the activation enthalpy of 1.21 eV is substantially lower in Ge/GeSn MQW structure than that previously reported in silicon–germanium (Si–Ge) systems. When the annealing temperature is increased to above 500 °C, Ge–Sn interdiffusion becomes severe. Some small pits appear on the surface, which should be related to Sn out-diffusion to the Ge cap layer, followed by Sn desorption from the top surface. This work provides insights into the Ge–Sn interdiffusion and Sn segregation behaviors in Ge/GeSn MQW structure, and the thermal budget that may be used for fabrication of devices comprising Ge/GeSn heterostructures.

  17. Ultrafast biexciton spectroscopy in semiconductor quantum dots: evidence for early emergence of multiple-exciton generation

    PubMed Central

    Choi, Younghwan; Sim, Sangwan; Lim, Seong Chu; Lee, Young Hee; Choi, Hyunyong

    2013-01-01

    Understanding multiple-exciton generation (MEG) in quantum dots (QDs) requires in-depth measurements of transient exciton dynamics. Because MEG typically faces competing ultrafast energy-loss intra-band relaxation, it is of central importance to investigate the emerging time-scale of the MEG kinetics. Here, we present ultrafast spectroscopic measurements of the MEG in PbS QDs via probing the ground-state biexciton transients. Specifically, we directly compare the biexciton spectra with the single-exciton ones before and after the intra-band relaxation. Early emergence of MEG is evidenced by observing transient Stark shift and quasi-instantaneous linewidth broadening, both of which take place before the intra-band relaxation. Photon-density-dependent study shows that the broadened biexciton linewidth strongly depends on the MEG-induced extra-exciton generation. Long after the intra-band relaxation, the biexciton broadening is small and the single-exciton state filling is dominant. PMID:24220495

  18. Evaluation of lactate detection using selective multiple quantum coherence in phantoms and brain tumours

    PubMed Central

    Harris, L M; Tunariu, N; Messiou, C; Hughes, J; Wallace, T; DeSouza, N M; Leach, M O; Payne, G S

    2015-01-01

    Lactate is a product of glucose metabolism. In tumour tissues, which exhibit enhanced glycolytic metabolism, lactate signals may be elevated, making lactate a potential useful tumour biomarker. Methods of lactate quantitation are complicated because of overlap between the lactate methyl doublet CH3 resonance and a lipid resonance at 1.3 ppm. This study presents the use of a selective homonuclear multiple quantum coherence transfer sequence (SelMQC-CSI), at 1.5 T, to better quantify lactate in the presence of lipids. Work performed on phantoms showed good lactate detection (49%) and lipid suppression (98%) efficiencies. To evaluate the method in the brain, the sequence was tested on a group of 23 patients with treated brain tumours, either glioma (N = 20) or secondary metastases in the brain (N = 3). Here it was proved to be of use in determining lactate concentrations in vivo. Lactate was clearly seen in SelMQC spectra of glioma, even in the presence of lipids, with high grade glioma (7.3 ± 1.9 mM, mean ± standard deviation) having higher concentrations than low grade glioma (1.9 ± 1.5 mM, p = 0.048). Lactate was not seen in secondary metastases in the brain. SelMQC-CSI is shown to be a useful technique for measuring lactate in tumours whose signals are otherwise contaminated by lipid. © 2015 The Authors NMR in Biomedicine Published by John Wiley & Sons Ltd. PMID:25586623

  19. Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures

    NASA Astrophysics Data System (ADS)

    Barletta, Philip T.; Acar Berkman, E.; Moody, Baxter F.; El-Masry, Nadia A.; Emara, Ahmed M.; Reed, Mason J.; Bedair, S. M.

    2007-04-01

    The authors present optical and electrical data for long wavelength (573-601nm) InGaN /GaN multiple quantum well light emitting diodes (LEDs) grown by metal organic chemical vapor deposition. These results are achieved by optimizing the active layer growth temperature and the quantum well width. Also, the p-GaN is grown at low temperature to avoid the disintegration of the InGaN quantum wells with high InN content. A redshift is observed for both the green and yellow LEDs upon decreasing the injection current at low current regime. In the case of the yellow LED, this shift is enough to push emission into the amber (601nm ).

  20. Flowing versus Static Conditions for Measuring Multiple Exciton Generation in PbSe Quantum Dots

    SciTech Connect

    Midgett, Aaron G.; Hillhouse, Hugh W.; Hughes, Barbara K.; Nozik, Arthur J.; Beard, Matthew C.

    2010-09-22

    Recent reports question the validity of pulsed fs-laser experiments for measuring the photon-to-exciton quantum yields (QYs) that result from multiple exciton generation (MEG). The repetitive nature of these experiments opens up an alternative relaxation pathway that may produce artificially high results. We present transient-absorption (TA) data for 4.6 and 6.6 nm diameter PbSe quantum dots (QDs) at a variety of pump photon energies. The data are collected under laminar flow conditions with volumetric flow rates ranging from 0 to 150 mL/min (resulting in Reynolds numbers up to 460). The results are modeled with a spatially resolved population balance of generation, recombination, convective replacement, and accumulation of long-lived excited QDs. By comparing the simulations and experiments, the steady-state population of the long-lived QD-excited states and their kinetics are determined for different experimental conditions. We also improve upon reported photon-to-exciton QYs for PbSe QDs. We find differences in the observed TA dynamics between flowing and static conditions that depend upon photon fluence, pump photon energy, and quality of the QD surfaces. For excitation energies below 2 Eg, independent of QD size or photon fluence, we observe no flow rate dependence in the TA dynamics. At excitation energies of hν > 3 Eg, we observe differences between static and flowing conditions that are most pronounced for high photon fluences. At 3.7 Eg and for 4.6 nm PbSe QDs we find a QY of 1.2 ± 0.1 and at 4.5 Eg the QY is 1.55 ± 0.05. With 6.6 nm QDs excited at 4.7 Eg we observe no difference between static and flowing conditions and find a QY of 1.61 ± 0.05. We also find that by treating the surface of QDs, we can decrease the charging probability (Pg ≈ 5 × 10-5) by a factor of 3-4. The observed variations suggest that different QD samples vary regarding their susceptibility to the

  1. Passively mode-locked erbium-doped fiber lasers using multiple quantum well saturable absorbers

    NASA Astrophysics Data System (ADS)

    Hayduk, Michael Joseph

    1997-09-01

    An experimental study of the mode-locking process in erbium-doped fiber lasers (EDFL's) operating at 1.55 μm using multiple quantum well saturable absorbers is presented. The self-starting passively mode-locked laser was constructed in a Fabry-Perot configuration using the saturable absorber as the back reflector of the cavity. Picosecond pulses that ranged from 14.2 to 38.8 ps were generated using a series of saturable absorbers. The pulse widths were dependent upon the optical properties of the saturable absorber used as the mode-locking element. The output power of the EDFL varied from 0.2 to 6.7 mW and was also dependent upon the saturable absorber used in the cavity. Soliton mode-locking using saturable absorbers was the mechanism responsible for the generation of the picosecond pulses by the EDFL. The long-lived carrier lifetime in the quantum wells was the primary optical property of the saturable absorber that determined the final pulse width. The carrier lifetimes of the eight individual saturable absorbers were investigated using time-resolved pump/probe experimental techniques. The lifetimes ranged from 40 to 1757 ps. The soliton mode- locking process allowed pulse widths of up to 45 times shorter than these carrier lifetimes to be produced. A self-starting passively mode-locked solid-state Cr4+:YAG laser was also developed using a novel saturable absorber mirror structure. The laser produced femtosecond pulses that were tunable from 1.488 to 1.535 μm. The average output power of the laser ranged from 40 to 80 mW at a repetition rate of 95 MHz. A minimum pulse width of 120 fs was generated at 1.488 μm. The high peak power of these pulses combined with its tunability in the 1.5 μm region made this laser an ideal spectroscopic source for use in the time-resolved pump/probe experiments.

  2. The generation of misfit dislocations in facet-controlled growth of AlGaN /GaN films

    NASA Astrophysics Data System (ADS)

    Cherns, D.; Sahonta, S.-L.; Liu, R.; Ponce, F. A.; Amano, H.; Akasaki, I.

    2004-11-01

    The relaxation of tensile stresses in AlGaN layers grown on GaN /(0001)sapphire by facet-controlled epitaxial lateral overgrowth is reported. It is shown that a-type misfit dislocations are introduced at inclined {112¯2} AlGaN /GaN interfaces, with strong evidence for a half-loop nucleation and glide mechanism driven by shear stresses present on the (0001) slip plane. In addition to relieving misfit stresses, these dislocations introduce grain rotations of up to 10-2rad across the AlGaN /GaN boundaries, leading to tilt boundaries at the meeting front between laterally growing wings and between regions growing in the lateral and [0001] directions. The effects of these processes on the defect density in subsequent layers are examined.

  3. Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system

    PubMed Central

    He, Chenguang; Qin, Zhixin; Xu, Fujun; Zhang, Lisheng; Wang, Jiaming; Hou, Mengjun; Zhang, Shan; Wang, Xinqiang; Ge, Weikun; Shen, Bo

    2016-01-01

    Two AlGaN samples with different strain were designed to investigate mechanism of stress-driven composition evolution. It is discovered that AlGaN grown on AlN or (AlN/GaN superlattices (SLs))/GaN both consist of two distinct regions with different compositions: transition region and uniform region, which is attributed to the compositional pulling effect. The formation of the transition region is due to the partial stress release caused by the generation of misfit dislocations near the hetero-interface. And the Al composition in the uniform region depends on the magnitude of residual strain. The difference in relaxation degree is 80.5% for the AlGaN epilayers grown on different underlayers, leading to a large Al composition difference of 22%. The evolutionary process of Al composition along [0001] direction was investigated in detail. PMID:27112969

  4. Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates

    SciTech Connect

    Crawford, Mary H.; Allerman, Andrew A.; Armstrong, Andrew M.; Smith, Michael L.; Cross, Karen C.

    2015-10-30

    We fabricated optically pumped and electrically injected ultraviolet (UV) lasers on reduced-threading-dislocation-density (reduced-TDD) AlGaN templates. The overgrowth of sub-micron-wide mesas in the Al0.32Ga0.68N templates enabled a tenfold reduction in TDD, to (2–3) × 108 cm–2. Optical pumping of AlGaN hetero-structures grown on the reduced-TDD templates yielded a low lasing threshold of 34 kW/cm2 at 346 nm. Room-temperature pulsed operation of laser diodes at 353 nm was demonstrated, with a threshold of 22.5 kA/cm2. Furthermore, reduced-TDD templates have been developed across the entire range of AlGaN compositions, presenting a promising approach for extending laser diodes into the deep UV.

  5. Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system.

    PubMed

    He, Chenguang; Qin, Zhixin; Xu, Fujun; Zhang, Lisheng; Wang, Jiaming; Hou, Mengjun; Zhang, Shan; Wang, Xinqiang; Ge, Weikun; Shen, Bo

    2016-01-01

    Two AlGaN samples with different strain were designed to investigate mechanism of stress-driven composition evolution. It is discovered that AlGaN grown on AlN or (AlN/GaN superlattices (SLs))/GaN both consist of two distinct regions with different compositions: transition region and uniform region, which is attributed to the compositional pulling effect. The formation of the transition region is due to the partial stress release caused by the generation of misfit dislocations near the hetero-interface. And the Al composition in the uniform region depends on the magnitude of residual strain. The difference in relaxation degree is 80.5% for the AlGaN epilayers grown on different underlayers, leading to a large Al composition difference of 22%. The evolutionary process of Al composition along [0001] direction was investigated in detail. PMID:27112969

  6. Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system

    NASA Astrophysics Data System (ADS)

    He, Chenguang; Qin, Zhixin; Xu, Fujun; Zhang, Lisheng; Wang, Jiaming; Hou, Mengjun; Zhang, Shan; Wang, Xinqiang; Ge, Weikun; Shen, Bo

    2016-04-01

    Two AlGaN samples with different strain were designed to investigate mechanism of stress-driven composition evolution. It is discovered that AlGaN grown on AlN or (AlN/GaN superlattices (SLs))/GaN both consist of two distinct regions with different compositions: transition region and uniform region, which is attributed to the compositional pulling effect. The formation of the transition region is due to the partial stress release caused by the generation of misfit dislocations near the hetero-interface. And the Al composition in the uniform region depends on the magnitude of residual strain. The difference in relaxation degree is 80.5% for the AlGaN epilayers grown on different underlayers, leading to a large Al composition difference of 22%. The evolutionary process of Al composition along [0001] direction was investigated in detail.

  7. Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates

    DOE PAGESBeta

    Crawford, Mary H.; Allerman, Andrew A.; Armstrong, Andrew M.; Smith, Michael L.; Cross, Karen C.

    2015-10-30

    We fabricated optically pumped and electrically injected ultraviolet (UV) lasers on reduced-threading-dislocation-density (reduced-TDD) AlGaN templates. The overgrowth of sub-micron-wide mesas in the Al0.32Ga0.68N templates enabled a tenfold reduction in TDD, to (2–3) × 108 cm–2. Optical pumping of AlGaN hetero-structures grown on the reduced-TDD templates yielded a low lasing threshold of 34 kW/cm2 at 346 nm. Room-temperature pulsed operation of laser diodes at 353 nm was demonstrated, with a threshold of 22.5 kA/cm2. Furthermore, reduced-TDD templates have been developed across the entire range of AlGaN compositions, presenting a promising approach for extending laser diodes into the deep UV.

  8. Implementation of generalized quantum measurements for unambiguous discrimination of multiple non-orthogonal coherent states.

    PubMed

    Becerra, F E; Fan, J; Migdall, A

    2013-01-01

    Generalized quantum measurements implemented to allow for measurement outcomes termed inconclusive can perform perfect discrimination of non-orthogonal states, a task which is impossible using only measurements with definitive outcomes. Here we demonstrate such generalized quantum measurements for unambiguous discrimination of four non-orthogonal coherent states and obtain their quantum mechanical description, the positive-operator valued measure. For practical realizations of this positive-operator valued measure, where noise and realistic imperfections prevent perfect unambiguous discrimination, we show that our experimental implementation outperforms any ideal standard-quantum-limited measurement performing the same non-ideal unambiguous state discrimination task for coherent states with low mean photon numbers. PMID:23774177

  9. Plasma Heating in Highly Excited GaN/AlGaN Multiple Quantum Wells

    SciTech Connect

    Botchkarev, A; Chow, W W; Jiang, H X; Lin, J Y; Mair, R; Morkoc, H; Zeng, K C

    1998-10-09

    Plasma Heating in Highly Excited GaN/AIGaN Multiple Quantum @@lvEu Wells w f + 1998 %p, K. C. Zeng, R. Mair, J. Y. Liz and H. X. Jiang a) ` fabrication and understanding of MQW lasers [2-5]. For the design of these lasers, one on RT optical studies. Our results revealed that in the GaN/AIGaN MQWS, plasma heating strongly effects the carrier distribution between the confined and unconfined band-to-band and fke excitonic transitions [7]. In the MQW sample under low the unconfined states as determined from the band structure. sample under high Lxc, we varied the excitation intensity by one order of magnitude from 0.110 to IO. The carrier density is estimated to be about N=1012/cm2 (at UC= 0.1 Io) to 1013/cm2 (at 1=== l.). We plotted the PL spectra for four representative excitation fimction of injected carrier density N (open squares). The ratio starts at a value of about 18% for N=1012/cm2 (& = O. lb), and reaches a value over 64 `XO for N=1013/cm2 (& = regions is a loss to optical gain. The carrier density is ve~ high in our experiment and an electron-hole plasma (EHP) state is expected. Because the carrier transfer process plasma temperature. The laser pump energy is about 4.3 eV, which is far above the energy band gap of the sample studied here. This may result in a hot carrier population carrier densities and plasma temperatures. Using a phenomenological expression based The calculated ratio of carriers in the unconfked to the confined states (Ima~ kf) as a finction of carrier density at different temperatures are plotted in Fig. 3 (solid lines). The figure shows that the experiment results can only be explained by plasma heating of the injected carriers at high & ( TP > TJ. The transparency carrier densities for GaN/AIXGal.XN MQW structures with well thickness from 2 to 4 nm were calculated to be around 1x 1012/cm2 [10]. It is thus obvious from Fig. 3 that under high carrier injection density above the transparency density, the plasma temperature, TP, is no

  10. Optical Control of Intersubband Absorption in a Multiple Quantum Well-Embedded Semiconductor Microcravity

    NASA Technical Reports Server (NTRS)

    Liu, Ansheng; Ning, Cun-Zheng

    2000-01-01

    Optical intersubband response of a multiple quantum well (MQW)-embedded microcavity driven by a coherent pump field is studied theoretically. The n-type doped MQW structure with three subbands in the conduction band is sandwiched between a semi-infinite medium and a distributed Bragg reflector (DBR). A strong pump field couples the two upper subbands and a weak field probes the two lower subbands. To describe the optical response of the MQW-embedded microcavity, we adopt a semi-classical nonlocal response theory. Taking into account the pump-probe interaction, we derive the probe-induced current density associated with intersubband transitions from the single-particle density-matrix formalism. By incorporating the current density into the Maxwell equation, we solve the probe local field exactly by means of Green's function technique and the transfer-matrix method. We obtain an exact expression for the probe absorption coefficient of the microcavity. For a GaAs/Al(sub x)Ga(sub 1-x)As MQW structure sandwiched between a GaAs/AlAs DBR and vacuum, we performed numerical calculations of the probe absorption spectra for different parameters such as pump intensity, pump detuning, and cavity length. We find that the probe spectrum is strongly dependent on these parameters. In particular, we find that the combination of the cavity effect and the Autler-Townes effect results in a triplet in the optical spectrum of the MQW system. The optical absorption peak value and its location can be feasibly controlled by varying the pump intensity and detuning.

  11. Spinning-sideband patterns in multiple-quantum magic-angle spinning NMR spectroscopy

    NASA Astrophysics Data System (ADS)

    Friedrich, Ulli

    1998-12-01

    Recent interest has focused on solid-state NMR experiments which excite multiple-quantum (MQ) coherences in the presence of magic-angle spinning (MAS). Such experiments have been applied to both dipolar-coupled spin Ι = 1/2 and half-integer quadrupolar systems. A feature common to both cases is the observation of interesting spinning sideband patterns in the indirect (MQ) dimension. In this paper, the origin of these patterns is reviewed in terms of two distinct mechanisms: first, rotor encoding of the dipolar or quadrupolar interaction caused by the change in the Hamiltonian active during the MQ reconversion period relative to the excitation period (reconversion rotor encoding, RRE); and, second, rotor modulation of the interaction during the evolution of the MQ coherences in the t1 dimension (evolution rotor modulation, ERM). Only the first mechanism is present for total spin coherences, while for lower-order MQ coherences both mechanisms contribute to the pattern. For dipolar and quadrupolar model systems, i.e., the three protons of a methyl group and quadrupolar nuclei with spin Ι = 3/2 and Ι = 5/2 and axially symmetric first-order quadrupolar interactions, analytical expressions are derived for all orders of MQ MAS signals. Simulations based on these analytical expressions and numerical density matrix simulations are compared with experimental spectra. Additional perturbing influences, such as the heteronuclear dipolar coupling between a quadrupolar and a spin Ι = 1/2 nucleus, are taken into account. The effect of dipolar couplings on a quadrupolar MQ spectrum is found to be enhanced by the order of the observed MQ coherence.

  12. Correlation between the structural and cathodoluminescence properties in InGaN/GaN multiple quantum wells with large number of quantum wells

    SciTech Connect

    Yang, Jing; Zhao, Degang Jiang, Desheng; Chen, Ping; Zhu, Jianjun; Liu, Zongshun; Le, Lingcong; He, Xiaoguang; Li, Xiaojing; Wang, Hui; Yang, Hui; Jahn, Uwe

    2014-09-01

    Cathodoluminescence (CL) characteristics on 30-period InGaN/GaN multiple quantum well (MQW) solar cell structures are investigated, revealing the relationship between optical and structural properties of the MQW structures with a large number of quantum wells. In the bottom MQW layers, a blueshift of CL peak along the growth direction is found and attributed to the decrease of indium content due to the compositional pulling effect. An obvious split of emission peak and a redshift of the main emission energy are found in the top MQW layers when the MQW grows above the critical layer thickness. They are attributed to the segregation of In-rich InGaN clusters rather than the increase of indium content in quantum well layer. The MQW structure is identified to consist of two regions: a strained one in the bottom, where the indium content is gradually decreased, and a partly relaxed one in the top with segregated In-rich InGaN clusters.

  13. Multiple quantum filtered 23Na NMR in the Langendorff perfused mouse heart: Ratio of triple/double quantum filtered signals correlates with [Na]i

    PubMed Central

    Eykyn, Thomas R.; Aksentijević, Dunja; Aughton, Karen L.; Southworth, Richard; Fuller, William; Shattock, Michael J.

    2015-01-01

    We investigate the potential of multiple quantum filtered (MQF) 23Na NMR to probe intracellular [Na]i in the Langendorff perfused mouse heart. In the presence of Tm(DOTP) shift reagent the triple quantum filtered (TQF) signal originated largely from the intracellular sodium pool with a 32 ± 6% contribution of the total TQF signal arising from extracellular sodium, whilst the rank 2 double-quantum filtered signal (DQF), acquired with a 54.7° flip-angle pulse, originated exclusively from the extracellular sodium pool. Given the different cellular origins of the 23Na MQF signals we propose that the TQF/DQF ratio can be used as a semi-quantitative measure of [Na]i in the mouse heart. We demonstrate a good correlation of this ratio with [Na]i measured with shift reagent at baseline and under conditions of elevated [Na]i. We compare the measurements of [Na]i using both shift reagent and TQF/DQF ratio in a cohort of wild type mouse hearts and in a transgenic PLM3SA mouse expressing a non-phosphorylatable form of phospholemman, showing a modest but measurable elevation of baseline [Na]i. MQF filtered 23Na NMR is a potentially useful tool for studying normal and pathophysiological changes in [Na]i, particularly in transgenic mouse models with altered Na regulation. PMID:26196304

  14. Predominant growth of non-polar a-plane (Al,Ga)N on patterned c-plane sapphire by hydride vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Mogilatenko, A.; Hagedorn, S.; Richter, E.; Zeimer, U.; Goran, D.; Weyers, M.; Tränkle, G.

    2013-03-01

    We report for the first time on predominant growth of non-polar a-plane (Al,Ga)N layers on patterned c-plane AlN/sapphire templates with ridges oriented along the [11¯00]Al2O3 direction. The layers were grown by hydride vapor phase epitaxy. During the first stages of the growth (Al,Ga)N nucleates simultaneously on top of the ridges, inside the trenches and on the trench sidewalls. As a result, two different (Al,Ga)N orientations are formed with respect to the horizontal growth front: c-plane (Al,Ga)N on the c-plane ridges as well as inside the trenches and a-plane (Al,Ga)N on the trench sidewalls. The growth rate of a-plane (Al,Ga)N exceeds that of c-plane regions, which leads to the complete overgrowth of c-plane (Al,Ga)N by the a-plane oriented material.

  15. High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells

    SciTech Connect

    Chang, Chiao-Yun; Li, Hen; Lu, Tien-Chang

    2014-03-03

    In this study, we demonstrated high efficiency InGaN/GaN light emitting diodes (LEDs) with asymmetric triangular multiple quantum wells (MQWs). Asymmetric triangular MQWs not only contribute to uniform carrier distribution in InGaN/GaN MQWs but also yield a low Auger recombination rate. In addition, asymmetric triangular MQWs with gallium face-oriented inclination band profiles can be immune from the polarization charge originating from typical c-plane InGaN/GaN quantum well structures. In the experiment, LEDs incorporated with asymmetric triangular MQWs with gallium face-oriented inclination band profiles exhibited a 60.0% external quantum efficiency at 20 mA and a 27.0% efficiency droop at 100 mA (corresponding to a current density of 69 A/cm{sup 2}), which accounted for an 11.7% efficiency improvement and a 31.1% droop reduction compared with symmetric square quantum well structure LEDs.

  16. Assembly of phosphonic acids on GaN and AlGaN

    NASA Astrophysics Data System (ADS)

    Simpkins, B. S.; Hong, S.; Stine, R.; Mäkinen, A. J.; Theodore, N. D.; Mastro, M. A.; Eddy, C. R., Jr.; Pehrsson, P. E.

    2010-01-01

    Self-assembled monolayers of octadecylphosphonic acid and 16-phosphonohexadecanoic acid (PHDA) were formed on the semiconductor substrates gallium nitride (GaN) and aluminium gallium nitride (AlGaN). The presence of the molecular layers was verified through x-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy. Structural information was acquired with infrared spectroscopy which verified the bonding orientation of the carboxyl-containing PHDA. The impact of the molecular layers on the channel conductivity and the surface electronic structure of an AlGaN/GaN heterostructure was measured. Our results indicate that pinning of the surface Fermi level prohibits modification of the channel conductivity by the layer. However, a surface dipole of ~0.8 eV is present and associated with both phosphonic acid layers. These results are of direct relevance to field-effect-based biochemical sensors and metal-semiconductor contact formation for this system and provide a fundamental basis for further applications of GaN and AlGaN technology in the fields of biosensing and microelectronics.

  17. CBED study of grain misorientations in AlGaN epilayers.

    PubMed

    Sahonta, S-L; Cherns, D; Liu, R; Ponce, F A; Amano, H; Akasaki, I

    2005-04-01

    Large angle convergent beam electron diffraction (LACBED) has been used to examine AlGaN epilayers grown by facet-controlled epitaxial lateral overgrowth on GaN/(0001) sapphire substrates in prototype UV laser structures. The substrates, defined by masks with seed openings along a <10-10> stripe direction, had GaN seed columns with {11-22} surfaces. Studies were carried out on cross-sectional samples cut perpendicular to the stripe axis. An LACBED analysis of the orientation of (000 2) planes, and of the (11-20) planes parallel to the stripe axis, revealed that the AlGaN wings were both rotated by angles of 1-2 x 10(-2)radians about the 10-10 stripe axis with respect to the underlying GaN, and distorted due to misfit strains. It is shown that the results are consistent with the observed structure of the AlGaN/GaN and the wing/wing boundaries, and with a new model for the generation of a-type misfit dislocations at the AlGaN/GaN interface. PMID:15777597

  18. Simultaneous SU(2) rotations on multiple quantum dot exciton qubits using a single shaped pulse

    NASA Astrophysics Data System (ADS)

    Mathew, Reuble; Yang, Hong Yi Shi; Hall, Kimberley C.

    2015-10-01

    Recent experimental demonstration of a parallel (π ,2 π ) single qubit rotation on excitons in two distant quantum dots [Nano Lett. 13, 4666 (2013), 10.1021/nl4018176] is extended in numerical simulations to the design of pulses for more general quantum state control, demonstrating the feasibility of full SU(2) rotations of each exciton qubit. Our results show that simultaneous high-fidelity quantum control is achievable within the experimentally accessible parameter space for commercial Fourier-domain pulse shaping systems. The identification of a threshold of distinguishability for the two quantum dots (QDs) for achieving high-fidelity parallel rotations, corresponding to a difference in transition energies of ˜0.25 meV , points to the possibility of controlling more than 10 QDs with a single shaped optical pulse.

  19. Multiple Metamagnetic Quantum Criticality in Sr3 Ru2 O7

    NASA Astrophysics Data System (ADS)

    Tokiwa, Y.; Mchalwat, M.; Perry, R. S.; Gegenwart, P.

    2016-06-01

    Bilayer strontium ruthenate Sr3 Ru2 O7 displays pronounced non-Fermi liquid behavior at magnetic fields around 8 T, applied perpendicular to the ruthenate planes, which previously has been associated with an itinerant metamagnetic quantum critical end point (QCEP). We focus on the magnetic Grüneisen parameter ΓH, which is the most direct probe to characterize field-induced quantum criticality. We confirm quantum critical scaling due to a putative two-dimensional QCEP near 7.845(5) T, which is masked by two ordered phases A and B , identified previously by neutron scattering. In addition, we find evidence for a QCEP at 7.53(2) T and determine the quantum critical regimes of both instabilities and the effect of their superposition.

  20. Multiple Metamagnetic Quantum Criticality in Sr_{3}Ru_{2}O_{7}.

    PubMed

    Tokiwa, Y; Mchalwat, M; Perry, R S; Gegenwart, P

    2016-06-01

    Bilayer strontium ruthenate Sr_{3}Ru_{2}O_{7} displays pronounced non-Fermi liquid behavior at magnetic fields around 8 T, applied perpendicular to the ruthenate planes, which previously has been associated with an itinerant metamagnetic quantum critical end point (QCEP). We focus on the magnetic Grüneisen parameter Γ_{H}, which is the most direct probe to characterize field-induced quantum criticality. We confirm quantum critical scaling due to a putative two-dimensional QCEP near 7.845(5) T, which is masked by two ordered phases A and B, identified previously by neutron scattering. In addition, we find evidence for a QCEP at 7.53(2) T and determine the quantum critical regimes of both instabilities and the effect of their superposition. PMID:27314732

  1. Simulation for spectral response of solar-blind AlGaN based p-i-n photodiodes

    NASA Astrophysics Data System (ADS)

    Xue, Shiwei; Xu, Jintong; Li, Xiangyang

    2015-04-01

    In this article, we introduced how to build a physical model of refer to the device structure and parameters. Simulations for solar-blind AlGaN based p-i-n photodiodes spectral characteristics were conducted in use of Silvaco TCAD, where device structure and parameters are comprehensively considered. In simulation, the effects of polarization, Urbach tail, mobility, saturated velocities and lifetime in AlGaN device was considered. Especially, we focused on how the concentration-dependent Shockley-Read-Hall (SRH) recombination model affects simulation results. By simulating, we analyzed the effects in spectral response caused by TAUN0 and TAUP0, and got the values of TAUN0 and TAUP0 which can bring a result coincides with test results. After that, we changed their values and made the simulation results especially the part under 255 nm performed better. In conclusion, the spectral response between 200 nm and 320 nm of solar-blind AlGaN based p-i-n photodiodes were simulated and compared with test results. We also found that TAUN0 and TAUP0 have a large impact on spectral response of AlGaN material.

  2. An extrinsic fmax > 100 GHz InAlN/GaN HEMT with AlGaN back barrier

    NASA Astrophysics Data System (ADS)

    Bo, Liu; Zhihong, Feng; Shaobo, Dun; Xiongwen, Zhang; Guodong, Gu; Yuangang, Wang; Peng, Xu; Zezhao, He; Shujun, Cai

    2013-04-01

    We report the DC and RF performance of InAlN/GaN high-electron mobility transistors with AlGaN back barrier grown on SiC substrates. These presented results confirm the high performance that is reachable by InAlN-based technology. The InAlN/GaN HEMT sample showed a high 2DEG mobility of 1550 cm2/(V·s) at a 2DEG density of 1.7 × 1013 cm-2. DC and RF measurements were performed on the unpassivated device with 0.2 μm “T“ gate. The maximum drain current density at VGS = 2 V is close to 1.05 A/mm in a reproducible way. The reduction in gate leakage current helps to increase the frequency performance of AlGaN back barrier devices. The power gain cut-off frequency of a transistor with an AlGaN back barrier is 105 GHz, which is much higher than that of the device without an AlGaN back barrier at the same gate length. These results indicate InAlN/GaN HEMT is a promising candidate for millimeter-wave application.

  3. Radiation damage resistance of AlGaN detectors for applications in the extreme-ultraviolet spectral range

    SciTech Connect

    Barkusky, Frank; Peth, Christian; Bayer, Armin; Mann, Klaus; John, Joachim; Malinowski, Pawel E.

    2009-09-15

    We report on the fabrication of aluminum gallium nitride (AlGaN) Schottky-photodiode-based detectors. AlGaN layers were grown using metal-organic chemical vapor deposition (MOCVD) on Si(111) wafers. The diodes were characterized at a wavelength of 13.5 nm using a table-top extreme-ultraviolet (EUV) radiation source, consisting of a laser-produced xenon plasma and a Schwarzschild objective. The responsivity of the diodes was tested between EUV energies ranging from 320 nJ down to several picojoules. For low fluences, a linear responsivity of 7.14 mAs/J could be determined. Saturation starts at approximately 1 nJ, merging into a linear response of 0.113 mAs/J, which could be attributed to the photoeffect on the Au electrodes on top of the diode. Furthermore, degradation tests were performed up to an absolute dose of 3.3x10{sup 19} photons/cm{sup 2}. AlGaN photodiodes were compared to commercially available silicon-based photodetectors. For AlGaN diodes, responsivity does not change even for the highest EUV dose, whereas the response of the Si diode decreases linearly to {approx}93% after 2x10{sup 19} photons/cm{sup 2}.

  4. Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy

    SciTech Connect

    Liu, P.-W.; Tsai, G.; Lin, H. H.; Krier, A.; Zhuang, Q. D.; Stone, M.

    2006-11-13

    Detailed studies are reported on the photoluminescence of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy on InAs substrates with the Sb mole fraction ranging from 0.06 to 0.13. From 4 K photoluminescence the band alignment was determined to be staggered type II. By comparing the emission peak energies with a transition energy calculation it was found that both the conduction and valence bands of InAsSb alloy exhibit some bowing. The bowing parameters were determined to be in the ratio of 4:6. For a sample with Sb composition {approx}0.12 in the quantum well the photoluminescence emission band covers the CO{sub 2} absorption peak making it suitable for use in sources for CO{sub 2} detection.

  5. Storage and retrieval of vector beams of light in a multiple-degree-of-freedom quantum memory.

    PubMed

    Parigi, Valentina; D'Ambrosio, Vincenzo; Arnold, Christophe; Marrucci, Lorenzo; Sciarrino, Fabio; Laurat, Julien

    2015-01-01

    The full structuration of light in the transverse plane, including intensity, phase and polarization, holds the promise of unprecedented capabilities for applications in classical optics as well as in quantum optics and information sciences. Harnessing special topologies can lead to enhanced focusing, data multiplexing or advanced sensing and metrology. Here we experimentally demonstrate the storage of such spatio-polarization-patterned beams into an optical memory. A set of vectorial vortex modes is generated via liquid crystal cell with topological charge in the optic axis distribution, and preservation of the phase and polarization singularities is demonstrated after retrieval, at the single-photon level. The realized multiple-degree-of-freedom memory can find applications in classical data processing but also in quantum network scenarios where structured states have been shown to provide promising attributes, such as rotational invariance. PMID:26166257

  6. Storage and retrieval of vector beams of light in a multiple-degree-of-freedom quantum memory

    PubMed Central

    Parigi, Valentina; D'Ambrosio, Vincenzo; Arnold, Christophe; Marrucci, Lorenzo; Sciarrino, Fabio; Laurat, Julien

    2015-01-01

    The full structuration of light in the transverse plane, including intensity, phase and polarization, holds the promise of unprecedented capabilities for applications in classical optics as well as in quantum optics and information sciences. Harnessing special topologies can lead to enhanced focusing, data multiplexing or advanced sensing and metrology. Here we experimentally demonstrate the storage of such spatio-polarization-patterned beams into an optical memory. A set of vectorial vortex modes is generated via liquid crystal cell with topological charge in the optic axis distribution, and preservation of the phase and polarization singularities is demonstrated after retrieval, at the single-photon level. The realized multiple-degree-of-freedom memory can find applications in classical data processing but also in quantum network scenarios where structured states have been shown to provide promising attributes, such as rotational invariance. PMID:26166257

  7. Optically controlled reflection modulator using GaAs-AlGaAs n-i-p-i/multiple-quantum-well structures

    NASA Technical Reports Server (NTRS)

    Law, K.-K.; Simes, R. J.; Coldren, L. A.; Gossard, A. C.; Maserjian, J.

    1989-01-01

    An optically controlled reflection modulator has been demonstrated that consists of a combination of a GaAs-AlGaAs n-i-p-i doping structure with a multiple-quantum-well structures on top of a distributed Bragg reflector, all grown by MBE. A modulation of approximately 60 percent is obtained on the test structure, corresponding to a differential change of absorption coefficient in the quantum wells of approximately 7500/cm. Changes in reflectance can be observed with a control beam power as low as 1.5 microW. This device structure has the potential of being developed as an optically addressed spatial light modulator for optical information processing.

  8. Polariton Resonances for Ultrastrong Coupling Cavity Optomechanics in GaAs /AlAs Multiple Quantum Wells

    NASA Astrophysics Data System (ADS)

    Jusserand, B.; Poddubny, A. N.; Poshakinskiy, A. V.; Fainstein, A.; Lemaitre, A.

    2015-12-01

    Polariton-mediated light-sound interaction is investigated through resonant Brillouin scattering experiments in GaAs /AlAs multiple-quantum wells. Photoelastic coupling enhancement at exciton-polariton resonance reaches 105 at 30 K as compared to a typical bulk solid room temperature transparency value. When applied to GaAs based cavity optomechanical nanodevices, this result opens the path to huge displacement sensitivities and to ultrastrong coupling regimes in cavity optomechanics with couplings g0 in the range of 100 GHz.

  9. Hydrogen cluster/network in tobermorite as studied by multiple-quantum spin counting {sup 1}H NMR

    SciTech Connect

    Mogami, Yuuki; Yamazaki, Satoru; Matsuno, Shinya; Matsui, Kunio; Noda, Yasuto; Takegoshi, K.

    2014-12-15

    Proton multiple-quantum (MQ) spin-counting experiment has been employed to study arrangement of hydrogen atoms in 9 Å/11 Å natural/synthetic tobermorites. Even though all tobermorite samples give similar characterless, broad static-powder {sup 1}H NMR spectra, their MQ spin-counting spectra are markedly different; higher quanta in 11 Å tobermorite do not grow with the MQ excitation time, while those in 9 Å one do. A statistical analysis of the MQ results recently proposed [26] is applied to show that hydrogens align in 9 Å tobermorite one dimensionally, while in 11 Å tobermorite they exist as a cluster of 5–8 hydrogen atoms.

  10. Spatial search by continuous-time quantum walk with multiple marked vertices

    NASA Astrophysics Data System (ADS)

    Wong, Thomas G.

    2016-04-01

    In the typical spatial search problems solved by continuous-time quantum walk, changing the location of the marked vertices does not alter the search problem. In this paper, we consider search when this is no longer true. In particular, we analytically solve search on the "simplex of K_M complete graphs" with all configurations of two marked vertices, two configurations of M+1 marked vertices, and two configurations of 2(M+1) marked vertices, showing that the location of the marked vertices can dramatically influence the required jumping rate of the quantum walk, such that using the wrong configuration's value can cause the search to fail. This sensitivity to the jumping rate is an issue unique to continuous-time quantum walks that does not affect discrete-time ones.

  11. Classical-quantum correspondence in atomic ionization by midinfrared pulses: Multiple peak and interference structures

    NASA Astrophysics Data System (ADS)

    Lemell, Christoph; Burgdörfer, Joachim; Gräfe, Stefanie; Dimitriou, Konstantinos I.; Arbó, Diego G.; Tong, Xiao-Min

    2013-01-01

    Atomic ionization by strong and ultrashort laser pulses with frequencies in the midinfrared spectral region have revealed novel features such as the low-energy structures. We have performed fully three-dimensional quantum dynamical as well as classical trajectory Monte Carlo simulations for pulses with wavelengths from λ=2000 to 6000 nm. Furthermore, we apply distorted-wave quantum approximations. This allows to explore the quantum-classical correspondence as well as the (non) perturbative character of the ionization dynamics driven by long-wavelength pulses. We observe surprisingly rich structures in the differential energy and angular momentum distribution which sensitively depend on λ, the pulse duration τp, and the carrier-envelope phase ϕCEP.

  12. Generating free charges by carrier multiplication in quantum dots for highly efficient photovoltaics.

    PubMed

    Ten Cate, Sybren; Sandeep, C S Suchand; Liu, Yao; Law, Matt; Kinge, Sachin; Houtepen, Arjan J; Schins, Juleon M; Siebbeles, Laurens D A

    2015-02-17

    CONSPECTUS: In a conventional photovoltaic device (solar cell or photodiode) photons are absorbed in a bulk semiconductor layer, leading to excitation of an electron from a valence band to a conduction band. Directly after photoexcitation, the hole in the valence band and the electron in the conduction band have excess energy given by the difference between the photon energy and the semiconductor band gap. In a bulk semiconductor, the initially hot charges rapidly lose their excess energy as heat. This heat loss is the main reason that the theoretical efficiency of a conventional solar cell is limited to the Shockley-Queisser limit of ∼33%. The efficiency of a photovoltaic device can be increased if the excess energy is utilized to excite additional electrons across the band gap. A sufficiently hot charge can produce an electron-hole pair by Coulomb scattering on a valence electron. This process of carrier multiplication (CM) leads to formation of two or more electron-hole pairs for the absorption of one photon. In bulk semiconductors such as silicon, the energetic threshold for CM is too high to be of practical use. However, CM in nanometer sized semiconductor quantum dots (QDs) offers prospects for exploitation in photovoltaics. CM leads to formation of two or more electron-hole pairs that are initially in close proximity. For photovoltaic applications, these charges must escape from recombination. This Account outlines our recent progress in the generation of free mobile charges that result from CM in QDs. Studies of charge carrier photogeneration and mobility were carried out using (ultrafast) time-resolved laser techniques with optical or ac conductivity detection. We found that charges can be extracted from photoexcited PbS QDs by bringing them into contact with organic electron and hole accepting materials. However, charge localization on the QD produces a strong Coulomb attraction to its counter charge in the organic material. This limits the production

  13. Use of external cavity quantum cascade laser compliance voltage in real-time trace gas sensing of multiple chemicals

    NASA Astrophysics Data System (ADS)

    Phillips, Mark C.; Taubman, Matthew S.; Kriesel, Jason

    2015-01-01

    We describe a prototype trace gas sensor designed for real-time detection of multiple chemicals. The sensor uses an external cavity quantum cascade laser (ECQCL) swept over its tuning range of 940-1075 cm-1 (9.30-10.7 μm) at a 10 Hz repetition rate. The sensor was designed for operation in multiple modes, including gas sensing within a multi-pass Heriott cell and intracavity absorption sensing using the ECQCL compliance voltage. In addition, the ECQCL compliance voltage was used to reduce effects of long-term drifts in the ECQCL output power. The sensor was characterized for noise, drift, and detection of chemicals including ammonia, methanol, ethanol, isopropanol, Freon- 134a, Freon-152a, and diisopropyl methylphosphonate (DIMP). We also present use of the sensor for mobile detection of ammonia downwind of cattle facilities, in which concentrations were recorded at 1-s intervals.

  14. Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions

    SciTech Connect

    Hammersley, S.; Dawson, P.; Kappers, M. J.; Massabuau, F. C.-P.; Sahonta, S.-L.; Oliver, R. A.; Humphreys, C. J.

    2015-09-28

    InGaN-based light emitting diodes and multiple quantum wells designed to emit in the green spectral region exhibit, in general, lower internal quantum efficiencies than their blue-emitting counter parts, a phenomenon referred to as the “green gap.” One of the main differences between green-emitting and blue-emitting samples is that the quantum well growth temperature is lower for structures designed to emit at longer wavelengths, in order to reduce the effects of In desorption. In this paper, we report on the impact of the quantum well growth temperature on the optical properties of InGaN/GaN multiple quantum wells designed to emit at 460 nm and 530 nm. It was found that for both sets of samples increasing the temperature at which the InGaN quantum well was grown, while maintaining the same indium composition, led to an increase in the internal quantum efficiency measured at 300 K. These increases in internal quantum efficiency are shown to be due reductions in the non-radiative recombination rate which we attribute to reductions in point defect incorporation.

  15. Efficiency enhancement of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors

    NASA Astrophysics Data System (ADS)

    Tsai, Yu-Lin; Lin, Chien-Chung; Han, Hau-Vei; Chen, Hsin-Chu; Chen, Kuo-Ju; Lai, Wei-Chi; Sheu, Jin-Kong; Lai, Fang-I.; Yu, Peichen; Kuo, Hao-Chung

    2013-03-01

    In recent year, InGaN-based alloy was also considered for photovoltaic devices owing to the distinctive material properties which are benefit photovoltaic performance. However, the Indium tin oxide (ITO) layer on top, which plays a role of transparent conductive oxide (TCO), can absorb UV photons without generating photocurrent. Also, the thin absorber layer in the device, which is consequent result after compromising with limited crystal quality, has caused insufficient light absorption. In this report, we propose an approach for solving these problems. A hybrid design of InGaN/GaN multiple quantum wells (MQWs) solar cells combined with colloidal CdS quantum dots (QDs) and back side distributed Bragg reflectors (DBRs) has been demonstrated. CdS QDs provide down-conversion effect at UV regime to avoid absorption of ITO. Moreover, CdS QDs also exhibit anti-reflective feature. DBRs at the back side have effectively reflected the light back into the absorber layer. CdS QDs enhance the external quantum efficiency (EQE) for light with wavelength shorter than 400 nm, while DBRs provide a broad band enhancement in EQE, especially within the region of 400 nm ~ 430 nm in wavelength. CdS QDs effectively achieved a power conversion efficiency enhancement as high as 7.2% compared to the device without assistance of CdS QDs. With the participation of DBRs, the power conversion efficiency enhancement has been further boosted to 14%. We believe that the hybrid design of InGaN/GaN MQWs solar cells with QDs and DBRs can be a method for high efficiency InGaN/GaN MQWs solar cells.

  16. Large-aperture multiple quantum well modulating retroreflector for free-space optical data transfer on unmanned aerial vehicles

    NASA Astrophysics Data System (ADS)

    Gilbreath, G. Charmaine; Rabinovich, William S.; Meehan, Timothy J.; Vilcheck, Michael J.; Mahon, Rita; Burris, Ray; Ferraro, Mina; Sokolsky, Ilene; Vasquez, John A.; Bovais, Chris S.; Cochrell, Kerry; Goins, Kim C.; Barbehenn, Robin; Katzer, D. Scott; Ikossi-Anastasiou, Kiki; Montes, Marcos J.

    2001-07-01

    We describe progress in the development of a multiple quantum well modulating retroreflector, including a description of recent demonstrations of an infrared data link between a small rotary-wing unmanned airborne vehicle and a ground-based laser interrogator using the device designed and fabricated at the Naval Research Laboratory (NRL). Modulating retroreflector systems couple an optical retroreflector, such as a corner cube, and an electro-optic shutter to allow two-way optical communications using a laser, telescope, and pointer-tracker on only one platform. The NRL modulating retroreflector uses a semiconductor-based multiple quantum well shutter capable of modulation rates greater than 10 Mbps, depending on link characteristics. The technology enables the use of near-infrared frequencies, which is well known to provide covert communications immune to frequency allocation problems. This specific device has the added advantage of being compact, lightweight, covert, and requires very low paper. Up to an order of magnitude in onboard power can be saved using a small array of these devices instead of the radio frequency equivalent. In the described demonstration, a Mbps optical link to an unmanned aerial vehicle in flight at a range of 100 to 200 feet is shown. Near real-time compressed video was also demonstrated at the Mbps level and is described.

  17. Electrical Properties of Recessed Algan/Gan Schottky Diodes Under off-State Stress

    NASA Astrophysics Data System (ADS)

    Florovič, Martin; Kováč, Jaroslav; Benko, Peter; Chvála, Aleš; Škriniarová, Jaroslava; Kordó, Peter

    2014-09-01

    Electrical properties of recessed and non-recessed AlGaN/GaN Schottky diodes under off-state stress were investigated. The samples were consecutively stressed by the stepped negative bias (-60 V). Before and after the stress I-V and C-V characteristics were evaluated to verify the device degradation process. Finally, the degradation mechanism and the influence of AlGaN recessed layer thickness on the electrical properties of the Schottky diodes were analysed. It was found that the short time stress influence on I-V characteristics was most negligible for the non-recessed sample. Shallow and deep recessed samples exhibited initial trap filling and reverse current decrease. Generally it was found that the stress voltage near 60 V caused recoverable device degradation

  18. Deep ultraviolet photoluminescence of Tm-doped AlGaN alloys

    SciTech Connect

    Nepal, N.; Zavada, J. M.; Lee, D. S.; Steckl, A. J.; Sedhain, A.; Lin, J. Y.; Jiang, H. X.

    2009-03-16

    The ultraviolet (UV) photoluminescence (PL) properties of Tm-doped Al{sub x}Ga{sub 1-x}N (0.39{<=}x{<=}1) alloys grown by solid-source molecular beam epitaxy were probed using above-bandgap excitation from a laser source at 197 nm. The PL spectra show dominant UV emissions at 298 and 358 nm only for samples with x=1 and 0.81. Temperature dependence of the PL intensities of these emission lines reveals exciton binding energies of 150 and 57 meV, respectively. The quenching of these UV emissions appears related to the thermal activation of the excitons bound to rare-earth structured isovalent (RESI) charge traps, which transfer excitonic energy to Tm{sup 3+} ions resulting in the UV emissions. A model of the RESI trap levels in AlGaN alloys is presented.

  19. Anisotropic optical properties of semipolar AlGaN layers grown on m-plane sapphire

    NASA Astrophysics Data System (ADS)

    Feneberg, Martin; Winkler, Michael; Klamser, Juliane; Stellmach, Joachim; Frentrup, Martin; Ploch, Simon; Mehnke, Frank; Wernicke, Tim; Kneissl, Michael; Goldhahn, Rüdiger

    2015-05-01

    The valence band order of AlxGa 1 -x N is investigated experimentally by analyzing the anisotropic dielectric functions of semipolar (11 2 ¯ 2 ) AlGaN thin films grown on m-plane Al2O3. Point-by-point fitted dielectric functions are obtained by spectroscopic ellipsometry and corresponding inter-band transition energies are extracted. The known strain situation of the sample layers is used to correct for the small strain-induced energy shifts within k . p perturbation theory. It also is used to identify transitions related to the three valence bands. Transitions with E ⊥ c from the Γ9 valence band verify an inter-band bowing parameter of b =0.9 eV . The transitions with E || c allow determining the crystal field splitting energy which can be described by a linear interpolation between the values for GaN and AlN satisfactorily.

  20. Quantum Darwinism

    SciTech Connect

    Zurek, Wojciech H

    2008-01-01

    Quantum Darwinism - proliferation, in the environment, of multiple records of selected states of the system (its information-theoretic progeny) - explains how quantum fragility of individual state can lead to classical robustness of their multitude.

  1. Comparing multiple exciton generation in quantum dots to impact ionization in bulk semiconductors: implications for enhancement of solar energy conversion.

    PubMed

    Beard, Matthew C; Midgett, Aaron G; Hanna, Mark C; Luther, Joseph M; Hughes, Barbara K; Nozik, Arthur J

    2010-08-11

    Multiple exciton generation (MEG) in quantum dots (QDs) and impact ionization (II) in bulk semiconductors are processes that describe producing more than one electron-hole pair per absorbed photon. We derive expressions for the proper way to compare MEG in QDs with II in bulk semiconductors and argue that there are important differences in the photophysics between bulk semiconductors and QDs. Our analysis demonstrates that the fundamental unit of energy required to produce each electron-hole pair in a given QD is the band gap energy. We find that the efficiency of the multiplication process increases by at least 2 in PbSe QDs compared to bulk PbSe, while the competition between cooling and multiplication favors multiplication by a factor of 3 in QDs. We also demonstrate that power conversion efficiencies in QD solar cells exhibiting MEG can greatly exceed conversion efficiencies of their bulk counterparts, especially if the MEG threshold energy can be reduced toward twice the QD band gap energy, which requires a further increase in the MEG efficiency. Finally, we discuss the research challenges associated with achieving the maximum benefit of MEG in solar energy conversion since we show the threshold and efficiency are mathematically related. PMID:20698615

  2. Comparing Multiple Exciton Generation in Quantum Dots To Impact Ionization in Bulk Semiconductors: Implications for Enhancement of Solar Energy Conversion

    SciTech Connect

    Beard, Matthew C.; Midgett, Aaron G.; Hanna, Mark C.; Luther, Joseph M.; Hughes, Barbara K.; Nozik, Arthur J.

    2010-07-26

    Multiple exciton generation (MEG) in quantum dots (QDs) and impact ionization (II) in bulk semiconductors are processes that describe producing more than one electron-hole pair per absorbed photon. We derive expressions for the proper way to compare MEG in QDs with II in bulk semiconductors and argue that there are important differences in the photophysics between bulk semiconductors and QDs. Our analysis demonstrates that the fundamental unit of energy required to produce each electron-hole pair in a given QD is the band gap energy. We find that the efficiency of the multiplication process increases by at least 2 in PbSe QDs compared to bulk PbSe, while the competition between cooling and multiplication favors multiplication by a factor of 3 in QDs. We also demonstrate that power conversion efficiencies in QD solar cells exhibiting MEG can greatly exceed conversion efficiencies of their bulk counterparts, especially if the MEG threshold energy can be reduced toward twice the QD band gap energy, which requires a further increase in the MEG efficiency. Finally, we discuss the research challenges associated with achieving the maximum benefit of MEG in solar energy conversion since we show the threshold and efficiency are mathematically related.

  3. On-chip photonic system using suspended p-n junction InGaN/GaN multiple quantum wells device and multiple waveguides

    NASA Astrophysics Data System (ADS)

    Wang, Yongjin; Zhu, Guixia; Cai, Wei; Gao, Xumin; Yang, Yongchao; Yuan, Jialei; Shi, Zheng; Zhu, Hongbo

    2016-04-01

    We propose, fabricate, and characterize the on-chip integration of suspended p-n junction InGaN/GaN multiple quantum wells (MQWs) device and multiple waveguides on the same GaN-on-silicon platform. The integrated devices are fabricated via a wafer-level process and exhibit selectable functionalities for diverse applications. As the suspended p-n junction InGaN/GaN MQWs device operates under a light emitting diode (LED) mode, part of the light emission is confined and guided by the suspended waveguides. The in-plane propagation along the suspended waveguides is measured by a micro-transmittance setup. The on-chip data transmission is demonstrated for the proof-of-concept photonic integration. As the suspended p-n junction InGaN/GaN MQWs device operates under photodiode mode, the light is illuminated on the suspended waveguides with the aid of the micro-transmittance setup and, thus, coupled into the suspended waveguides. The guided light is finally sensed by the photodiode, and the induced photocurrent trace shows a distinct on/off switching performance. These experimental results indicate that the on-chip photonic integration is promising for the development of sophisticated integrated photonic circuits in the visible wavelength region.

  4. Very high efficiency photovoltaic cells based on fully organic multiple quantum wells. Quarterly technical progress report, 15 February 1995--15 May 1995

    SciTech Connect

    Forrest, S R

    1997-03-01

    The principal project objective is to demonstrate relatively high solar conversion efficiency using extremely low-cost, thin-film technology based on crystalline organic multiple quantum well (MQW) photovoltaic cells. The authors base their work on recent observations both in the laboratory and elsewhere that have indicated the quantum efficiency of organic photoconductors based on vacuum-deposited thin films can be increased by at least two orders of magnitude (to at least 10%) if the organic films are grown in a highly ordered manner, and if organic multiple quantum wells are used in the absorption region. The authors are investigating the physical origin of this phenomenon, and they are growing thin-film MQW cells that demonstrate relatively high quantum efficiencies to determine the practicality of crystalline organic thin-film cells for solar power applications. The investigations are based on a unique, ultrahigh-vacuum organic molecular beam deposition system in the laboratory.

  5. Picture this: The value of multiple visual representations for student learning of quantum concepts in general chemistry

    NASA Astrophysics Data System (ADS)

    Allen, Emily Christine

    Mental models for scientific learning are often defined as, "cognitive tools situated between experiments and theories" (Duschl & Grandy, 2012). In learning, these cognitive tools are used to not only take in new information, but to help problem solve in new contexts. Nancy Nersessian (2008) describes a mental model as being "[loosely] characterized as a representation of a system with interactive parts with representations of those interactions. Models can be qualitative, quantitative, and/or simulative (mental, physical, computational)" (p. 63). If conceptual parts used by the students in science education are inaccurate, then the resulting model will not be useful. Students in college general chemistry courses are presented with multiple abstract topics and often struggle to fit these parts into complete models. This is especially true for topics that are founded on quantum concepts, such as atomic structure and molecular bonding taught in college general chemistry. The objectives of this study were focused on how students use visual tools introduced during instruction to reason with atomic and molecular structure, what misconceptions may be associated with these visual tools, and how visual modeling skills may be taught to support students' use of visual tools for reasoning. The research questions for this study follow from Gilbert's (2008) theory that experts use multiple representations when reasoning and modeling a system, and Kozma and Russell's (2005) theory of representational competence levels. This study finds that as students developed greater command of their understanding of abstract quantum concepts, they spontaneously provided additional representations to describe their more sophisticated models of atomic and molecular structure during interviews. This suggests that when visual modeling with multiple representations is taught, along with the limitations of the representations, it can assist students in the development of models for reasoning about

  6. Dynamic light-matter coupling across multiple spatial dimensions in a quantum dots-in-a-well heterostructure

    SciTech Connect

    Prasankumar, Rohit P; Taylor, Antoinette J

    2009-01-01

    Ultrafast density-dependent optical spectroscopic measurements on a quantum dots-in-a-well heterostructure reveal several distinctive phenomena, most notably a strong coupling between the quantum well population and light absorption at the quantum dot excited state.

  7. Impedance analysis of nano thickness layered AlGaN acoustic sensor deposited by thermionic vacuum arc

    NASA Astrophysics Data System (ADS)

    Özen, Soner; Bilgiç, Eyüp; Gülmez, Gülay; Şenay, Volkan; Pat, Suat; Korkmaz, Şadan; Mohammadigharehbagh, Reza

    2016-03-01

    In this study, AlGaN acoustic sensor was deposited on aluminum metal substrate by thermionic vacuum arc (TVA) method for the first time. Gallium materials are used in many applications for optoelectronic device and semiconductor technology. Thermionic vacuum arc is the deposition technology for the variously materials and applications field. The thickness of the acoustic sensor is in deposited as nano layer. Impedance analyses were realized. Also, TVA production parameters and some properties of the deposited layers were investigated. TVA is a fast deposition technology for the gallium compounds and doped gallium compounds. Obtained results show that AlGaN materials are very promising materials. Moreover, these acoustic sensors have been produced by TVA technology.

  8. AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit

    NASA Astrophysics Data System (ADS)

    Raman, Ajay; Dasgupta, Sansaptak; Rajan, Siddharth; Speck, James S.; Mishra, Umesh K.

    2008-05-01

    In this paper, AlGaN channels for high electron mobility transistors (HEMTs) have been evaluated based on a power device figure of merit. AlGaN-channel HEMTs grown on SiC substrates by plasma-assisted molecular beam epitaxy (PAMBE) were fabricated. Maximum saturation current of 0.55 A/mm was obtained at VGS=1 V. Current-gain cutoff ( ft) and power-gain cutoff ( fmax) frequencies obtained from small signal measurements were ft=13.2 GHz and fmax=41 GHz. Pulsed current-voltage (I-V) measurements at 200 ns showed no dispersion in I-V curves. Large signal continuous wave (CW) measurement yielded an output power density of 4.5 W/mm with power added efficiency (PAE) of 59% at 4 GHz. This work demonstrates the potential of AlGaN channel HEMTs for high voltage switching and microwave power applications.

  9. Temperature dependent photoluminescence and micromapping of multiple stacks InAs quantum dots

    SciTech Connect

    Xu, Ming Jaffré, Alexandre Alvarez, José Kleider, Jean-Paul Boutchich, Mohamed; Jittrong, Apichat; Chokamnuai, Thitipong; Panyakeow, Somsak; Kanjanachuchai, Songphol

    2015-02-27

    We utilized temperature dependent photoluminescence (PL) techniques to investigate 1, 3 and 5 stack InGaAs quantum dots (QDs) grown on cross-hatch patterns. PL mapping can well reproduce the QDs distribution as AFM and position dependency of QD growth. It is possible to observe crystallographic dependent PL. The temperature dependent spectra exhibit the QDs energy distribution which reflects the size and shape. The inter-dot carrier coupling effect is observed and translated as a red shift of 120mV on the [1–10] direction peak is observed at 30K on 1 stack with regards to 3 stacks samples, which is assigned to lateral coupling.

  10. Temperature dependent photoluminescence and micromapping of multiple stacks InAs quantum dots

    NASA Astrophysics Data System (ADS)

    Xu, Ming; Jaffré, Alexandre; Alvarez, José; Kleider, Jean-Paul; Jittrong, Apichat; Chokamnuai, Thitipong; Panyakeow, Somsak; Boutchich, Mohamed; Kanjanachuchai, Songphol

    2015-02-01

    We utilized temperature dependent photoluminescence (PL) techniques to investigate 1, 3 and 5 stack InGaAs quantum dots (QDs) grown on cross-hatch patterns. PL mapping can well reproduce the QDs distribution as AFM and position dependency of QD growth. It is possible to observe crystallographic dependent PL. The temperature dependent spectra exhibit the QDs energy distribution which reflects the size and shape. The inter-dot carrier coupling effect is observed and translated as a red shift of 120mV on the [1-10] direction peak is observed at 30K on 1 stack with regards to 3 stacks samples, which is assigned to lateral coupling.

  11. Multiphoton resonances for all-optical quantum logic with multiple cavities

    NASA Astrophysics Data System (ADS)

    Everitt, Mark S.; Garraway, Barry M.

    2014-07-01

    We develop a theory for the interaction of multilevel atoms with multimode cavities yielding cavity-enhanced multiphoton resonances. The locations of the resonances are predicted from the use of effective two- and three-level Hamiltonians. As an application we show that quantum gates can be realized when photonic qubits are encoded on the cavity modes in arrangements where ancilla atoms transit the cavity. The fidelity of operations is increased by conditional measurements on the atom and by the use of a selected, dual-rail, Hilbert space. A universal set of gates is proposed, including the Fredkin gate and iswap operation; the system seems promising for scalability.

  12. Fermi surface reconstruction and multiple quantum phase transitions in the antiferromagnet CeRhIn5

    PubMed Central

    Jiao, Lin; Chen, Ye; Kohama, Yoshimitsu; Graf, David; Bauer, E. D.; Singleton, John; Zhu, Jian-Xin; Weng, Zongfa; Pang, Guiming; Shang, Tian; Zhang, Jinglei; Lee, Han-Oh; Park, Tuson; Jaime, Marcelo; Thompson, J. D.; Steglich, Frank; Si, Qimiao; Yuan, H. Q.

    2015-01-01

    Conventional, thermally driven continuous phase transitions are described by universal critical behavior that is independent of the specific microscopic details of a material. However, many current studies focus on materials that exhibit quantum-driven continuous phase transitions (quantum critical points, or QCPs) at absolute zero temperature. The classification of such QCPs and the question of whether they show universal behavior remain open issues. Here we report measurements of heat capacity and de Haas–van Alphen (dHvA) oscillations at low temperatures across a field-induced antiferromagnetic QCP (Bc0 ≈ 50 T) in the heavy-fermion metal CeRhIn5. A sharp, magnetic-field-induced change in Fermi surface is detected both in the dHvA effect and Hall resistivity at B0* ≈ 30 T, well inside the antiferromagnetic phase. Comparisons with band-structure calculations and properties of isostructural CeCoIn5 suggest that the Fermi-surface change at B0* is associated with a localized-to-itinerant transition of the Ce-4f electrons in CeRhIn5. Taken in conjunction with pressure experiments, our results demonstrate that at least two distinct classes of QCP are observable in CeRhIn5, a significant step toward the derivation of a universal phase diagram for QCPs. PMID:25561536

  13. Strain-compensated AlGaN /GaN/InGaN cladding layers in homoepitaxial nitride devices

    NASA Astrophysics Data System (ADS)

    Czernecki, R.; Krukowski, S.; Targowski, G.; Prystawko, P.; Sarzynski, M.; Krysko, M.; Kamler, G.; Grzegory, I.; Leszczynski, M.; Porowski, S.

    2007-12-01

    One of the most important problems in III-nitride violet laser diode technology is the lattice mismatch between the AlGaN cladding layers and the rest of the epitaxial structure. For efficiently working devices, it is necessary to have both a high Al content and thick claddings. This leads, however, to severe sample bowing and even cracking of the upper layer. In this work, we propose a cladding structure of strain-compensated AlGaN /GaN/InGaN superlattice grown by metal-organic vapor phase epitaxy on bulk GaN substrates. Various thicknesses and compositions of the layers were employed. We measured the radius of bowing, lattice mismatches, aluminum and indium contents, and densities of threading dislocations. The proposed cladding structures suppress bowing and cracking, which are the two parasitic effects commonly experienced in laser diodes with bulk AlGaN claddings. The suppression of cracking and bowing is shown to occur due to modified strain energy distribution of the superlattices structure.

  14. Improved performance in vertical GaN Schottky diode assisted by AlGaN tunneling barrier

    NASA Astrophysics Data System (ADS)

    Cao, Y.; Chu, R.; Li, R.; Chen, M.; Williams, A. J.

    2016-03-01

    In a vertical GaN Schottky barrier diode, the free electron concentration n in the 6-μm-thick drift layer was found to greatly impact the diode reverse leakage current, which increased from 2.1 × 10-7 A to 3.9 × 10-4 A as n increased from 7.5 × 1014 cm-3 to 6.3 × 1015 cm-3 at a reverse bias of 100 V. By capping the drift layer with an ultrathin 5-nm graded AlGaN layer, reverse leakage was reduced by more than three orders of magnitude with the same n in the drift layer. We attribute this to the increased Schottky barrier height with the AlGaN at the surface. Meanwhile, the polarization field within the graded AlGaN effectively shortened the depletion depth, which led to the formation of tunneling current at a relatively small forward bias. The turn-on voltage in the vertical Schottky diodes was reduced from 0.77 V to 0.67 V—an advantage in reducing conduction loss in power switching applications.

  15. Three Temperature Regimes in Superconducting Photon Detectors: Quantum, Thermal and Multiple Phase-Slips as Generators of Dark Counts

    PubMed Central

    Murphy, Andrew; Semenov, Alexander; Korneev, Alexander; Korneeva, Yulia; Gol’tsman, Gregory; Bezryadin, Alexey

    2015-01-01

    We perform measurements of the switching current distributions of three w ≈ 120 nm wide, 4 nm thick NbN superconducting strips which are used for single-photon detectors. These strips are much wider than the diameter of the vortex cores, so they are classified as quasi-two-dimensional (quasi-2D). We discover evidence of macroscopic quantum tunneling by observing the saturation of the standard deviation of the switching distributions at temperatures around 2 K. We analyze our results using the Kurkijärvi-Garg model and find that the escape temperature also saturates at low temperatures, confirming that at sufficiently low temperatures, macroscopic quantum tunneling is possible in quasi-2D strips and can contribute to dark counts observed in single photon detectors. At the highest temperatures the system enters a multiple phase-slip regime. In this range single phase-slips are unable to produce dark counts and the fluctuations in the switching current are reduced. PMID:25988591

  16. Nonlinear absorption properties of AlGaAs/GaAs multiple quantum wells grown by metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Lee, Hsing-Chung; Kost, A.; Kawase, M.; Hariz, A.; Dapkus, P. Daniel

    1988-01-01

    The nonlinear absorption properties of the excitonic resonances associated with multiple quantum wells (MQWs) in AlGaAs/GaAs grown by metalorganic chemical vapor deposition are reported. The dependence of the saturation properties on growth parameters, especially growth temperature, and the well width are described. The minimum measured saturation intensity for these materials is 250 W/sq cm, the lowest reported value to date. The low saturation intensities are the result of excellent minority carrier properties. A systematic study of minority carrier lifetimes in quantum wells are reported. Lifetimes range from 50-350 ns depending on growth temperature and well width. When corrected for lateral diffusion effects and the measured minority carrier lifetime, the saturation data suggest that saturation intensities as low as 2.3 W/sq cm can be achieved in this system. The first measurements of the dependence of the exciton area and the magnitude of the excitonic absorption on well width are prsented. The growth of MQW structures on transparent GaP substrates is demonstrated and the electroabsorption properties of these structures are reviewed.

  17. Three temperature regimes in superconducting photon detectors: quantum, thermal and multiple phase-slips as generators of dark counts.

    PubMed

    Murphy, Andrew; Semenov, Alexander; Korneev, Alexander; Korneeva, Yulia; Gol'tsman, Gregory; Bezryadin, Alexey

    2015-01-01

    We perform measurements of the switching current distributions of three w ≈ 120 nm wide, 4 nm thick NbN superconducting strips which are used for single-photon detectors. These strips are much wider than the diameter of the vortex cores, so they are classified as quasi-two-dimensional (quasi-2D). We discover evidence of macroscopic quantum tunneling by observing the saturation of the standard deviation of the switching distributions at temperatures around 2 K. We analyze our results using the Kurkijärvi-Garg model and find that the escape temperature also saturates at low temperatures, confirming that at sufficiently low temperatures, macroscopic quantum tunneling is possible in quasi-2D strips and can contribute to dark counts observed in single photon detectors. At the highest temperatures the system enters a multiple phase-slip regime. In this range single phase-slips are unable to produce dark counts and the fluctuations in the switching current are reduced. PMID:25988591

  18. Supercurrent and multiple singlet-doublet phase transitions of a quantum dot Josephson junction inside an Aharonov-Bohm ring

    NASA Astrophysics Data System (ADS)

    Karrasch, C.; Meden, V.

    2009-01-01

    We study a quantum dot Josephson junction inside an Aharonov-Bohm environment. The geometry is modeled by an Anderson impurity coupled to two directly linked BCS leads. We illustrate that the well-established picture of the low-energy physics being governed by an interplay of two distinct (singlet and doublet) phases is still valid for this interferometric setup. The phase boundary depends, however, nonmonotonically on the coupling strength between the superconductors, causing the system to exhibit re-entrance behavior and multiple phase transitions. We compute the zero-temperature Josephson current and demonstrate that it can become negative in the singlet phase by virtue of the Coulomb interaction U . As a starting point, the limit of large superconducting energy gaps Δ=∞ is solved analytically. In order to tackle arbitrary Δ<∞ and U>0 , we employ a truncated functional renormalization-group scheme which was previously demonstrated to give quantitatively reliable results for the quantum dot Josephson problem.

  19. Enhanced power conversion efficiency in InGaN-based solar cells via graded composition multiple quantum wells.

    PubMed

    Tsai, Yu-Lin; Wang, Sheng-Wen; Huang, Jhih-Kai; Hsu, Lung-Hsing; Chiu, Ching-Hsueh; Lee, Po-Tsung; Yu, Peichen; Lin, Chien-Chung; Kuo, Hao-Chung

    2015-11-30

    This work demonstrates the enhanced power conversion efficiency (PCE) in InGaN/GaN multiple quantum well (MQWs) solar cells with gradually decreasing indium composition in quantum wells (GQWs) toward p-GaN as absorber. The GQW can improve the fill factor from 42% to 62% and enhance the short current density from 0.8 mA/cm2 to 0.92 mA/cm2, as compares to the typical MQW solar cells. As a result, the PCE is boosted from 0.63% to 1.11% under AM1.5G illumination. Based on simulation and experimental results, the enhanced PCE can be attributed to the improved carrier collection in GQW caused by the reduction of potential barriers and piezoelectric polarization induced fields near the p-GaN layer. The presented concept paves a way toward highly efficient InGaN-based solar cells and other GaN-related MQW devices. PMID:26698792

  20. Photoreflectance and surface photovoltage spectroscopy of beryllium-doped GaAs /AlAs multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Čechavičius, B.; Kavaliauskas, J.; Krivaitė, G.; Seliuta, D.; Valušis, G.; Halsall, M. P.; Steer, M. J.; Harrison, P.

    2005-07-01

    We present an optical study of beryllium δ-doped GaAs /AlAs multiple quantum well (QW) structures designed for sensing terahertz (THz) radiation. Photoreflectance (PR), surface photovoltage (SPV), and wavelength-modulated differential surface photovoltage (DSPV) spectra were measured in the structures with QW widths ranging from 3to20nm and doping densities from 2×1010to5×1012cm-2 at room temperature. The PR spectra displayed Franz-Keldysh oscillations which enabled an estimation of the electric-field strength of ˜20kV/cm at the sample surface. By analyzing the SPV spectra we have determined that a buried interface rather than the sample surface mainly governs the SPV effect. The DSPV spectra revealed sharp features associated with excitonic interband transitions which energies were found to be in a good agreement with those calculated including the nonparabolicity of the energy bands. The dependence of the exciton linewidth broadening on the well width and the quantum index has shown that an average half monolayer well width fluctuations is mostly predominant broadening mechanism for QWs thinner than 10nm. The line broadening in lightly doped QWs, thicker than 10nm, was found to arise from thermal broadening with the contribution from Stark broadening due to random electric fields of the ionized impurities in the structures. We finally consider the possible influence of strong internal electric fields, QW imperfections, and doping level on the operation of THz sensors fabricated using the studied structures.

  1. Collapse of the superradiant phase and multiple quantum phase transitions for Bose-Einstein condensates in an optomechanical cavity

    NASA Astrophysics Data System (ADS)

    Wang, Zhimei; Lian, Jinling; Liang, J.-Q.; Yu, Yanmei; Liu, Wu-Ming

    2016-03-01

    We investigate the multiple stable macroscopic quantum states of a Bose-Einstein condensate in an optomechanical cavity with pump-cavity field detuning and atom-photon interaction following the experimental realization of the quantum phase transition [Nature (London) 464, 1301 (2010), 10.1038/nature09009]. The spin-coherent-state variational method is useful in exploring the multistability since it has the advantage of including both normal and inverted pseudospin states. In the blue detuning regime the usual transition from normal to superradiant phases still exists, however, when the atom-field coupling increases to a certain value, called the turning point, the superradiant phase collapses due to the resonant damping of the mechanical oscillator. As a consequence, the system undergoes at this point an additional phase transition to the normal phase of the atomic population inversion state. In particular, the superradiant phase disappears completely at strong photon-phonon interaction, resulting in the direct atomic population transfer between two atomic levels. Moreover, the coupling-induced collapse and revival of the superradiant state are also found in the red detuning region.

  2. Multiple Environment Single System Quantum Mechanical/Molecular Mechanical (MESS-QM/MM) Calculations. 1. Estimation of Polarization Energies

    PubMed Central

    2015-01-01

    In combined quantum mechanical/molecular mechanical (QM/MM) free energy calculations, it is often advantageous to have a frozen geometry for the quantum mechanical (QM) region. For such multiple-environment single-system (MESS) cases, two schemes are proposed here for estimating the polarization energy: the first scheme, termed MESS-E, involves a Roothaan step extrapolation of the self-consistent field (SCF) energy; whereas the other scheme, termed MESS-H, employs a Newton–Raphson correction using an approximate inverse electronic Hessian of the QM region (which is constructed only once). Both schemes are extremely efficient, because the expensive Fock updates and SCF iterations in standard QM/MM calculations are completely avoided at each configuration. They produce reasonably accurate QM/MM polarization energies: MESS-E can predict the polarization energy within 0.25 kcal/mol in terms of the mean signed error for two of our test cases, solvated methanol and solvated β-alanine, using the M06-2X or ωB97X-D functionals; MESS-H can reproduce the polarization energy within 0.2 kcal/mol for these two cases and for the oxyluciferin–luciferase complex, if the approximate inverse electronic Hessians are constructed with sufficient accuracy. PMID:25321186

  3. Continuous-wave operation of ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes

    NASA Astrophysics Data System (ADS)

    Kneissl, Michael; Treat, David W.; Teepe, Mark; Miyashita, Naoko; Johnson, Noble M.

    2003-04-01

    We demonstrate ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes operating under continuous-wave (cw) conditions. The laser diodes were grown on sapphire substrates by metalorganic chemical vapor deposition. Under pulsed bias conditions, we have achieved threshold current densities as low as 5 kA/cm2 for laser diodes with emission wavelengths between 368 nm and 378 nm and have demonstrated lasing at 363.2 nm at room temperature, the shortest wavelength yet reported for a semiconductor laser diode. The cw operation up to a heat sink temperature of 40 °C was demonstrated on a series of narrow ridge-waveguide devices processed with chemically assisted ion beam etched mirrors and high reflective coating on both facets. The shortest wavelength emission under cw operation conditions was 373.5 nm with output powers of more than 1 mW.

  4. Imaging of multiple mRNA targets using quantum dot based in situ hybridization and spectral deconvolution in clinical biopsies

    SciTech Connect

    Tholouli, Eleni; Hoyland, Judith A.; Di Vizio, Dolores; O'Connell, Fionnuala; MacDermott, Sarah A.; Twomey, David; Levenson, Richard; Yin, John A. Liu; Golub, Todd R.; Loda, Massimo; Byers, Richard . E-mail: r.byers@manchester.ac.uk

    2006-09-22

    Gene expression mapping using microarray analysis has identified useful gene signatures for predicting outcome. However, little of this has been translated into clinically effective diagnostic tools as microarrays require high quality fresh-frozen tissue samples. We describe a methodology of multiplexed in situ hybridization (ISH) using a novel combination of quantum dot (QD)-labeled oligonucleotide probes and spectral imaging analysis in routinely processed, formalin-fixed paraffin embedded human biopsies. The conditions for QD-ISH were optimized using a poly d(T) oligonucleotide in decalcified bone marrow samples. Single and multiplex QD-ISH was performed in samples with acute leukemia and follicular lymphoma using oligonucleotide probes for myeloperoxidase, bcl-2, survivin, and XIAP. Spectral imaging was used for post hybridization tissue analysis, enabling separation of spatially colocalized signals. The method allows quantitative characterization of multiple gene expression using non-bleaching fluorochromes. This is expected to facilitate multiplex in situ transcript detection in routinely processed human clinical tissue.

  5. Integrated p–n junction InGaN/GaN multiple-quantum-well devices with diverse functionalities

    NASA Astrophysics Data System (ADS)

    Cai, Wei; Gao, Xumin; Yuan, Wei; Yang, Yongchao; Yuan, Jialei; Zhu, Hongbo; Wang, Yongjin

    2016-05-01

    We propose, fabricate, and demonstrate integrated p–n junction InGaN/GaN multiple-quantum-well devices with diverse functionalities on a GaN-on-silicon platform. Suspended devices with a common n-contact are realized using a wafer-level process. For the integrated devices, part of the light emitted by a light-emitting diode (LED) is guided in-plane through a suspended waveguide and is sensed by another photodiode. The induced photocurrent is tuned by the LED. The integrated devices can act as two independent LEDs to deliver different signals simultaneously for free-space visible light communication. Furthermore, the suspended devices can be used as two separate photodiodes to detect incident light with a distinct on/off switching performance.

  6. CdTe-Cd1 - xMnxTe multiple quantum well structures grown by pulsed laser evaporation and epitaxy

    NASA Astrophysics Data System (ADS)

    Dubowski, J. J.; Roth, A. P.; Wasilewski, Z. R.; Rolfe, S. J.

    1991-09-01

    Structural and optical properties of (001) CdTe-Cd1-xMnxTe (x=0.10) multiple quantum well structures grown by pulsed laser evaporation and epitaxy (PLEE) are investigated. The layers are grown on (001) CdZnTe wafers held at a temperature in the range of 210-230 °C. Secondary-ion mass spectroscopy in-depth profiles reveal that highly uniform structures are grown. Numerical analysis of double crystal x-ray diffraction results demonstrates high structural quality of the layers and indicates partial relaxation of the strain in these structures. Low-temperature photoluminescence exhibits excitonic recombinations in the CdTe wells whereas photoluminescence from the Cd1-xMnxTe barriers is not observed. The chemical composition of the barriers deduced from photoluminescence is in excellent agreement with the intended chemical composition set during growth.

  7. Optical bistability and multistability in a defect slab doped by GaAs/AlGaAs multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Seyyed, Hossein Asadpour; G, Solookinejad; M, Panahi; E Ahmadi, Sangachin

    2016-05-01

    We proposed a new model for controlling the optical bistability (OB) and optical multistability (OM) in a defect slab doped with four-level GaAs/AlGaAs multiple quantum wells with 15 periods of 17.5 nm GaAs wells and 15-nm Al0.3 Ga0.7As barriers. The effects of biexciton energy renormalization, exciton spin relaxation, and thickness of the slab on the OB and OM properties of the defect slab were theoretically investigated. We found that the transition from OB to OM or vice versa is possible by adjusting the controllable parameters in a lab. Moreover, the transmission, reflection, and absorption properties of the weak probe light through the slab were also discussed in detail.

  8. 650-nm AlGaInP multiple-quantum-well lasers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine

    NASA Astrophysics Data System (ADS)

    Dong, Jian-Rong; Teng, Jing-Hua; Chua, Soo-Jin; Foo, Boon-Chin; Wang, Yan-Jun; Yuan, Hai-Rong; Yuan, Shu

    2003-07-01

    Using tertiarybutylphosphine (TBP) as phosphorus precursor, high-quality AlGaInP epilayers and AlGaInP/GaInP multiple-quantum-well (MQW) structures have been grown by metalorganic chemical vapor deposition. The photoluminescence results indicate that the AlGaInP materials are as good as those grown using PH3 in terms of optical quality. Finally, AlGaInP MQW red laser structures have been grown, and the electrically pumped AlGaInP red lasers grown by TBP have been demonstrated with the emission wavelength of 647 nm, indicating that TBP can be used to grow high-quality AlGaInP epilayers and AlGaInP-based red lasers, which presently is dominated by the highly toxic gas source PH3.

  9. Optical anisotropy in GaAs/AlxGa1-xAs multiple quantum wells under thermally induced uniaxial strain

    NASA Astrophysics Data System (ADS)

    Shen, H.; Wraback, M.; Pamulapati, J.; Newman, P. G.; Dutta, M.; Lu, Y.; Kuo, H. C.

    1993-05-01

    The effect of thermally induced in-plane uniaxial strain on the optical properties of a GaAs/AlxGa1-xAs multiple quantum well (MQW) has been studied in detail. The strain was produced by bonding the MQW thin films to LiTaO3, a transparent substrate which possesses a direction-dependent thermal expansion coefficient. At temperatures different from the bonding temperature we have observed an anisotropy in the optical properties of the MQW due to the strain-induced lowering of its in-plane fourfold rotation symmetry. The anisotropic absorption and birefringence for light incident normal to such a MQW structure have been determined and compared to a theory involving the mixing of the valence subbands.

  10. 27-dB gain unidirectional 1300-nm polarization-insensitive multiple quantum well laser amplifier module

    NASA Astrophysics Data System (ADS)

    Tiemeijer, L. F.; Thijs, P. J. A.; Dongen, T. V.; Binsma, J. J. M.; Jansen, E. J.; Verboven, A. J. M.

    1994-12-01

    An unidirectional polarization-insensitive multiple quantum well laser amplifier module for the 1300 nm window with a record high gain of 27-dB and a 3-dB saturation output power of 13-dB is demonstrated. The module gain has a 3-dB width exceeding 60 nm and shows a typical polarization sensitivity and gain ripple as low as 0.3-dB. To provide immunity for backscattered or reflected light, polarization independent optical isolaters were inserted in the input and output coupling optics of the package. A practical optical amplifier module for the 1300 nm window is very desirable, because most of the presently installed fiber has its zero dispersion wavelength around 1310 nm, while much of the older fiber often only can be operated around this wavelength.

  11. Optimized selective lactate excitation with a refocused multiple-quantum filter

    NASA Astrophysics Data System (ADS)

    Holbach, Mirjam; Lambert, Jörg; Johst, Sören; Ladd, Mark E.; Suter, Dieter

    2015-06-01

    Selective detection of lactate signals in in vivo MR spectroscopy with spectral editing techniques is necessary in situations where strong lipid or signals from other molecules overlap the desired lactate resonance in the spectrum. Several pulse sequences have been proposed for this task. The double-quantum filter SSel-MQC provides very good lipid and water signal suppression in a single scan. As a major drawback, it suffers from significant signal loss due to incomplete refocussing in situations where long evolution periods are required. Here we present a refocused version of the SSel-MQC technique that uses only one additional refocussing pulse and regains the full refocused lactate signal at the end of the sequence.

  12. A learner's multiple views of the connection between mathematics and quantum mechanics

    NASA Astrophysics Data System (ADS)

    Dini, Vesal; Hammer, David

    Students' physical intuitions and prior knowledge are critical to making sense of and solving problems in classical mechanics. In quantum mechanics (qm), coordinating concepts connected to such everyday thinking becomes more difficult. How then can students develop coherence in their knowledge of qm? Consider how experts do it: they build meaning in, around, and through the mathematics of the theory. This view on the role of mathematics, which is one of among many possible to take, seems most productive for qm. In our work to characterize student views of knowledge that emerge in the context of qm coursework, we came to analyze one student who mostly adopted such a view until a shift in context moved him to express an alternative. We present his case and discuss important implications for instruction.

  13. High-temperature HgTe/CdTe multiple-quantum-well lasers.

    PubMed

    Vurgaftman, I; Meyer, J

    1998-02-16

    While most previous studies of Hg-based mid-IR lasers have focused on either bulk Hg(1-x)Cd(x)Te alloys or thick (> 100 A) Hg(1-x)Cd(x)Te quantum wells with relatively large x, we show that much thinner (20-30 A) HgTe binary wells may be engineered to suppress both Auger recombination and intervalence free carrier absorption. On the basis of detailed numerical simulations, we predict 4.3 m cw emission at temperatures up to 220 K for optical pumping and 105 K for diode operation. In pulsed mode, we expect maximum lasing temperatures more than 100 K higher than any prior Hg-based mid-IR result. PMID:19377592

  14. Beyond GaAs: Room-Temperature Intersubband Absorption in SrTiO3/LaAlO3 Multiple Quantum Wells

    NASA Astrophysics Data System (ADS)

    Ortmann, John; Nookala, Nish; He, Qian; Posadas, Agham; Borisevich, Albina; Belkin, Mikhail; Demkov, Alex

    With the recent advancements in oxide thin film fabrication, it is possible to design and grow oxide quantum well heterostructures whose well depths far exceed those of traditional GaAs-based quantum wells. Here, we discuss the design, fabrication, structural quality, and optical properties of MBE-grown SrTiO3/LaAlO3 multiple quantum wells. These oxide quantum wells have a conduction band offset of greater than 2eV, as measured by X-ray photoelectron spectroscopy. We present simulations of the confined states within the wells and demonstrate the feasibility of driving intersubband transitions whose energies exceed 1eV. Furthermore, we demonstrate the excellent crystalline quality of these heterostructures via X-ray diffraction spectra and STEM-HAADF imaging and present evidence of atomic-scale control of the structures. Finally, we present room-temperature FTIR spectra demonstrating the first-reported evidence of intersubband absorption in SrTiO3/LaAlO3 multiple quantum wells and discuss the possibility of oxide quantum well-based devices.

  15. Exciton Kinetics in Strained II-Vi Semiconductor Multiple Quantum Wells.

    NASA Astrophysics Data System (ADS)

    Hefetz, Yaron

    1987-09-01

    Two groups of wide gap II-VI semiconductor superlattices based on ZnSe/Zn(,1-x)Mn(,x)Se and CdTe/ZnTe were investigated using CW and time-resolved photoluminescence, excitation, reflectance, and photomodulated reflectance spectroscopy at various temperatures and under an external magnetic field. All these lattice mismatch strained layer structures were grown by MBE technique and exhibit strong excitonic photoluminescence at low temperatures. By studying the dynamics of the exciton recombination processes, the role of strain, quantum confinement and localization effects were revealed. In the CdTe/ZnTc system where the lattice mismatch is (DELTA)a/a (TURNEQ) 6% the inhomogeneously broadened ((TURN)40 mev) luminescence line is governed by excitonic localization in well width fluctuations. Exchange interactions of the carriers with the Mn('++) ions in the dilute magnetic semiconductor Zn(,1-x)Mn(,x)Se in thin film and the barrier of the MQW structures influence their optical behavior in an exernal magnetic field. "Giant" Zeeman splittings of up to (TURN)10 mev/Tesla were measured in samples with moderate Mn concentration (x = .23). Antiferromagnetic interaction reduces these splittings in samples with higher Mn concentrations. In observing the time evolution of the carrier in Zn(,1-x)Mn(,x)Se MQW we found that the capture time of these carriers into the well is on the order of 1 psec but the last stages of thermalization, exciton formations and localization is (TURN)70 ps. The fast capture of electrons and holes into the quantum wells bypass the energy transfer into the Mn internal transition that is responsible to the efficient "yellow" luminescence in ZnMnSe mixed crystals.

  16. Multiple exciton generation in quantum dots versus singlet fission in molecular chromophores for solar photon conversion.

    PubMed

    Beard, Matthew C; Johnson, Justin C; Luther, Joseph M; Nozik, Arthur J

    2015-06-28

    Both multiple exciton generation (MEG) in semiconductor nanocrystals and singlet fission (SF) in molecular chromophores have the potential to greatly increase the power conversion efficiency of solar cells for the production of solar electricity (photovoltaics) and solar fuels (artificial photosynthesis) when used in solar photoconverters. MEG creates two or more excitons per absorbed photon, and SF produces two triplet states from a single singlet state. In both cases, multiple charge carriers from a single absorbed photon can be extracted from the cell and used to create higher power conversion efficiencies for a photovoltaic cell or a cell that produces solar fuels, like hydrogen from water splitting or reduced carbon fuels from carbon dioxide and water (analogous to biological photosynthesis). The similarities and differences in the mechanisms and photoconversion cell architectures between MEG and SF are discussed. PMID:25987579

  17. PHYSICAL FOUNDATIONS OF QUANTUM ELECTRONICS: Multiple reflection method for electromagnetic waves in layered dielectric structures

    NASA Astrophysics Data System (ADS)

    Morozov, G. V.; Maev, R. G.; Drake, G. W. F.

    2001-09-01

    Reflection and transmission of a plane electromagnetic wave propagating in a layered dielectric structure with an arbitrary number of layers of various thicknesses are investigated. For the general case of oblique incidence of the wave on this structure, the reflection and transmission coefficients are calculated for both TE and TM waves using a multiple reflection method. An algorithm to apply the obtained formulas for numerical and analytical calculations is suggested.

  18. Observation of mid-infrared intersubband absorption in non-polar m-plane AlGaN/GaN multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Kotani, Teruhisa; Arita, Munetaka; Arakawa, Yasuhiko

    2014-12-01

    Mid-infrared (4.20-4.84 μm) intersubband absorption in non-polar m-plane Al0.5Ga0.5N/GaN multiple-quantum wells is observed at room temperature. 10 period Al0.5Ga0.5N/GaN multiple-quantum wells were grown on free-standing m-plane GaN substrates by metalorganic chemical vapor deposition (MOCVD), and the high-quality structural and optical properties are revealed by x-ray diffraction and photoluminescence studies. Through this we have demonstrated that MOCVD grown non-polar m-plane AlGaN/GaN quantum wells are a promising material for mid-infrared intersubband devices.

  19. Observation of mid-infrared intersubband absorption in non-polar m-plane AlGaN/GaN multiple quantum wells

    SciTech Connect

    Kotani, Teruhisa; Arita, Munetaka; Arakawa, Yasuhiko

    2014-12-29

    Mid-infrared (4.20–4.84 μm) intersubband absorption in non-polar m-plane Al{sub 0.5}Ga{sub 0.5}N/GaN multiple-quantum wells is observed at room temperature. 10 period Al{sub 0.5}Ga{sub 0.5}N/GaN multiple-quantum wells were grown on free-standing m-plane GaN substrates by metalorganic chemical vapor deposition (MOCVD), and the high-quality structural and optical properties are revealed by x-ray diffraction and photoluminescence studies. Through this we have demonstrated that MOCVD grown non-polar m-plane AlGaN/GaN quantum wells are a promising material for mid-infrared intersubband devices.

  20. Frequency up-conversion in nonpolar a-plane GaN/AlGaN based multiple quantum wells optimized for applications with silicon solar cells

    NASA Astrophysics Data System (ADS)

    Radosavljević, S.; Radovanović, J.; Milanović, V.; Tomić, S.

    2014-07-01

    We have described a method for structural parameters optimization of GaN/AlGaN multiple quantum well based up-converter for silicon solar cells. It involves a systematic tuning of individual step quantum wells by use of the genetic algorithm for global optimization. In quantum well structures, the up-conversion process can be achieved by utilizing nonlinear optical effects based on intersubband transitions. Both single and double step quantum wells have been tested in order to maximize the second order susceptibility derived from the density matrix formalism. The results obtained for single step wells proved slightly better and have been further pursued to obtain a more complex design, optimized for conversion of an entire range of incident photon energies.

  1. Frequency up-conversion in nonpolar a-plane GaN/AlGaN based multiple quantum wells optimized for applications with silicon solar cells

    SciTech Connect

    Radosavljević, S.; Radovanović, J. Milanović, V.; Tomić, S.

    2014-07-21

    We have described a method for structural parameters optimization of GaN/AlGaN multiple quantum well based up-converter for silicon solar cells. It involves a systematic tuning of individual step quantum wells by use of the genetic algorithm for global optimization. In quantum well structures, the up-conversion process can be achieved by utilizing nonlinear optical effects based on intersubband transitions. Both single and double step quantum wells have been tested in order to maximize the second order susceptibility derived from the density matrix formalism. The results obtained for single step wells proved slightly better and have been further pursued to obtain a more complex design, optimized for conversion of an entire range of incident photon energies.

  2. A different approach to multiplicity-edited heteronuclear single quantum correlation spectroscopy

    NASA Astrophysics Data System (ADS)

    Sakhaii, Peyman; Bermel, Wolfgang

    2015-10-01

    A new experiment for recording multiplicity-edited HSQC spectra is presented. In standard multiplicity-edited HSQC experiments, the amplitude of CH2 signals is negative compared to those of CH and CH3 groups. We propose to reverse the sign of 13C frequencies of CH2 groups in t1 as criteria for editing. Basically, a modified [BIRD]r,x element (Bilinear Rotation Pulses and Delays) is inserted in a standard HSQC pulse sequence with States-TPPI frequency detection in t1 for this purpose. The modified BIRD element was designed in such a way as to pass or stop the evolution of the heteronuclear 1JHC coupling. This is achieved by adding a 180° proton RF pulse in each of the 1/2J periods. Depending on their position the evolution is switched on or off. Usually, the BIRD- element is applied on real and imaginary increments of a HSQC experiment to achieve the editing between multiplicities. Here, we restrict the application of the modified BIRD element to either real or imaginary increments of the HSQC. With this new scheme for editing, changing the frequency and/or amplitude of the CH2 signals becomes available. Reversing the chemical shift axis for CH2 signals simplifies overcrowded frequency regions and thus avoids accidental signal cancellation in conventional edited HSQC experiments. The practical implementation is demonstrated on the protein Lysozyme. Advantages and limitations of the idea are discussed.

  3. A different approach to multiplicity-edited heteronuclear single quantum correlation spectroscopy.

    PubMed

    Sakhaii, Peyman; Bermel, Wolfgang

    2015-10-01

    A new experiment for recording multiplicity-edited HSQC spectra is presented. In standard multiplicity-edited HSQC experiments, the amplitude of CH2 signals is negative compared to those of CH and CH3 groups. We propose to reverse the sign of (13)C frequencies of CH2 groups in t1 as criteria for editing. Basically, a modified [BIRD](r,x) element (Bilinear Rotation Pulses and Delays) is inserted in a standard HSQC pulse sequence with States-TPPI frequency detection in t1 for this purpose. The modified BIRD element was designed in such a way as to pass or stop the evolution of the heteronuclear (1)JHC coupling. This is achieved by adding a 180° proton RF pulse in each of the 1/2J periods. Depending on their position the evolution is switched on or off. Usually, the BIRD- element is applied on real and imaginary increments of a HSQC experiment to achieve the editing between multiplicities. Here, we restrict the application of the modified BIRD element to either real or imaginary increments of the HSQC. With this new scheme for editing, changing the frequency and/or amplitude of the CH2 signals becomes available. Reversing the chemical shift axis for CH2 signals simplifies overcrowded frequency regions and thus avoids accidental signal cancellation in conventional edited HSQC experiments. The practical implementation is demonstrated on the protein Lysozyme. Advantages and limitations of the idea are discussed. PMID:26298081

  4. Improving hole injection and carrier distribution in InGaN light-emitting diodes by removing the electron blocking layer and including a unique last quantum barrier

    SciTech Connect

    Cheng, Liwen Chen, Haitao; Wu, Shudong

    2015-08-28

    The effects of removing the AlGaN electron blocking layer (EBL), and using a last quantum barrier (LQB) with a unique design in conventional blue InGaN light-emitting diodes (LEDs), were investigated through simulations. Compared with the conventional LED design that contained a GaN LQB and an AlGaN EBL, the LED that contained an AlGaN LQB with a graded-composition and no EBL exhibited enhanced optical performance and less efficiency droop. This effect was caused by an enhanced electron confinement and hole injection efficiency. Furthermore, when the AlGaN LQB was replaced with a triangular graded-composition, the performance improved further and the efficiency droop was lowered. The simulation results indicated that the enhanced hole injection efficiency and uniform distribution of carriers observed in the quantum wells were caused by the smoothing and thinning of the potential barrier for the holes. This allowed a greater number of holes to tunnel into the quantum wells from the p-type regions in the proposed LED structure.

  5. Compact lightweight payload for covert datalink using a multiple quantum well modulating retroreflector on a small rotary-wing unmanned airborne vehicle

    NASA Astrophysics Data System (ADS)

    Gilbreath, G. Charmaine; Rabinovich, William S.; Meehan, Timothy J.; Vilcheck, Michael J.; Mahon, Rita; Burris, Ray; Ferraro, Mina; Sokolsky, Ilene; Vasquez, John A.; Bovais, Chris S.; Cochrell, Kerry; Goins, Kim C.; Barbehenn, Robin; Katzer, D. Scott; Ikossi-Anastasiou, Kiki; Montes, Marcos J.

    2000-11-01

    In this paper, we describe progress in the development of the NRL Multiple Quantum Well modulating retro-reflector including a description of recent demonstrations of an infrared data link between a small rotary-wing unmanned airborne vehicle and a ground based laser interrogator using the NRL multiple quantum well modulating retro-reflector. Modulating retro-reflector systems couple an optical retro- reflector, such as a corner-cube, and an electro-optic shutter to allow two-way optical communications using a laser, telescope and pointer-tracker on only one platform. The NRL modulating retro-reflector uses a semiconductor based multiple quantum well shutter capable of modulation rates up to 10 Mbps, depending on link characteristics. The technology enable the use of near-infrared frequencies, which is well known to provide covert communications immune to frequency allocation problems. The multiple quantum well modulating retro-reflector has the added advantage of being compact, lightweight, covert, and requires very low power. Up to an order of magnitude in onboard power can be saved using a small array of these devices instead of the Radio Frequency equivalent. In the described demonstration, a Mbps optical link to an unmanned aerial vehicle in flight at a range of 100-200 feet is shown. Near real-time compressed video is also demonstrated at the Mbps level.

  6. On-chip integration of suspended InGaN/GaN multiple-quantum-well devices with versatile functionalities.

    PubMed

    Cai, Wei; Yang, Yongchao; Gao, Xumin; Yuan, Jialei; Yuan, Wei; Zhu, Hongbo; Wang, Yongjin

    2016-03-21

    We propose, fabricate and demonstrate on-chip photonic integration of suspended InGaN/GaN multiple quantum wells (MQWs) devices on the GaN-on-silicon platform. Both silicon removal and back wafer etching are conducted to obtain membrane-type devices, and suspended waveguides are used for the connection between p-n junction InGaN/GaN MQWs devices. As an in-plane data transmission system, the middle p-n junction InGaN/GaN MQWs device is used as a light emitting diode (LED) to deliver signals by modulating the intensity of the emitted light, and the other two devices act as photodetectors (PDs) to sense the light guided by the suspended waveguide and convert the photons into electrons, achieving 1 × 2 in-plane information transmission via visible light. Correspondingly, the three devices can function as independent PDs to realize multiple receivers for free space visible light communication. Further, the on-chip photonic platform can be used as an active electro-optical sensing system when the middle device acts as a PD and the other two devices serve as LEDs. The experimental results show that the auxiliary LED sources can enhance the amplitude of the induced photocurrent. PMID:27136794

  7. Multicolor Quantum Dot-Based Chemical Nose for Rapid and Array-Free Differentiation of Multiple Proteins.

    PubMed

    Xu, Qinfeng; Zhang, Yihong; Tang, Bo; Zhang, Chun-yang

    2016-02-16

    Nanomaterial-based differential sensors (e.g., chemical nose) have shown great potential for identification of multiple proteins because of their modulatable recognition and transduction capability but with the limitation of array separation, single-channel read-out, and long incubation time. Here, we develop a multicolor quantum dot (QD)-based multichannel sensing platform for rapid identification of multiple proteins in an array-free format within 1 min. A protein-binding dye of bromophenol blue (BPB) is explored as an efficient reversible quencher of QDs, and the mixture of BPB with multicolor QDs may generate the quenched QD-BPB complexes. The addition of proteins will disrupt the QD-BPB complexes as a result of the competitive protein-BPB binding, inducing the separation of BPB from the QDs and the generation of distinct fluorescence patterns. The multicolor patterns may be collected at a single-wavelength excitation and differentiated by a linear discriminant analysis (LDA). This multichannel sensing platform allows for the discrimination of ten proteins and seven cell lines with the fastest response rate reported to date, holding great promise for rapid and high-throughput medical diagnostics. PMID:26759896

  8. Multiple timescale analysis of dynamical evolution near two coalescing eigenvalues in open quantum systems

    NASA Astrophysics Data System (ADS)

    Garmon, Savannah; Ordonez, Gonzalo

    Recently the physics of coalescing eigenvalues at an exceptional point (EP) has been studied in a wide range of physical contexts, including open quantum systems. At an EP N at which N eigenvalues coalesce the Hamiltonian can no longer be diagonalized but instead only reduced to a Jordan block of dimension N. In order to describe the survival probability P (t) for an initially prepared state in the vicinity of two coalescing levels, we further subdivide the EP2 case into the EP2A and EP2B, where the EP2A involves the coalesce of two virtual bound states to form a resonance/anti-resonance pair and the EP2B occurs when two resonances collide to form two new resonances. We show that in the vicinity of the EP2B the usual exponential decay appearing for resonances on intermediate timescales is modified as P (t) ~ te-Γt . However, the long-time evolution near the EP2B follows a 1 /t3 power law decay. Meanwhile the evolution for the EP2A is non-exponential on all timescales, and may be strongly influenced by continuum threshold effects.

  9. Advantages of the AlGaN spacer in InAlN high-electron-mobility transistors grown using metalorganic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Yamada, Atsushi; Ishiguro, Tetsuro; Kotani, Junji; Tomabechi, Shuichi; Nakamura, Norikazu; Watanabe, Keiji

    2016-05-01

    We demonstrate the advantages of an AlGaN spacer layer in an InAlN high-electron-mobility transistor (HEMT). We investigated the effects of the growth parameters of the spacer layer on electron mobility in InAlN HEMTs grown by metalorganic vapor phase epitaxy, focusing on the surface roughness of the spacer layer and sharpness of the interface with the GaN channel layer. The electron mobility degraded, as evidenced by the formation of a graded AlGaN layer at the top of the GaN channel layer and the surface roughness of the AlN spacer layer. We believe that the short migration length of aluminum atoms is responsible for the observed degradation. An AlGaN spacer layer was employed to suppress the formation of the graded AlGaN layer and improve surface morphology. A high electron mobility of 1550 cm2 V‑1 s‑1 and a low sheet resistance of 211 Ω/sq were achieved for an InAlN HEMT with an AlGaN spacer layer.

  10. Fabrication of Very High Efficiency 5.8 GHz Power Amplifiers using AlGaN HFETs on SiC Substrates for Wireless Power Transmission

    NASA Technical Reports Server (NTRS)

    Sullivan, Gerry

    2001-01-01

    For wireless power transmission using microwave energy, very efficient conversion of the DC power into microwave power is extremely important. Class E amplifiers have the attractive feature that they can, in theory, be 100% efficient at converting, DC power to RF power. Aluminum gallium nitride (AlGaN) semiconductor material has many advantageous properties, relative to silicon (Si), gallium arsenide (GaAs), and silicon carbide (SiC), such as a much larger bandgap, and the ability to form AlGaN/GaN heterojunctions. The large bandgap of AlGaN also allows for device operation at higher temperatures than could be tolerated by a smaller bandgap transistor. This could reduce the cooling requirements. While it is unlikely that the AlGaN transistors in a 5.8 GHz class E amplifier can operate efficiently at temperatures in excess of 300 or 400 C, AlGaN based amplifiers could operate at temperatures that are higher than a GaAs or Si based amplifier could tolerate. Under this program, AlGaN microwave power HFETs have been fabricated and characterized. Hybrid class E amplifiers were designed and modeled. Unfortunately, within the time frame of this program, good quality HFETs were not available from either the RSC laboratories or commercially, and so the class E amplifiers were not constructed.

  11. Improving the performance of tensor matrix vector multiplication in quantum chemistry codes.

    SciTech Connect

    Gropp, W. D.; Kaushik, D. K.; Minkoff, M.; Smith, B. F.

    2008-05-08

    Cumulative reaction probability (CRP) calculations provide a viable computational approach to estimate reaction rate coefficients. However, in order to give meaningful results these calculations should be done in many dimensions (ten to fifteen). This makes CRP codes memory intensive. For this reason, these codes use iterative methods to solve the linear systems, where a good fraction of the execution time is spent on matrix-vector multiplication. In this paper, we discuss the tensor product form of applying the system operator on a vector. This approach shows much better performance and provides huge savings in memory as compared to the explicit sparse representation of the system matrix.

  12. Deep ultraviolet detection dynamics of AlGaN based devices

    NASA Astrophysics Data System (ADS)

    Mazzeo, G.; Conte, G.; Reverchon, J.-L.; Dussaigne, A.; Duboz, J.-Y.

    2006-11-01

    The photoconductive response of AlGaN based UV detectors to 193nm excimer laser radiation is presented. Two devices have been tested: a metal-semiconductor-metal (MSM) planar structure and a Schottky diode. The transient response of the MSM device closely follows the laser pulses, with a photoconductive decay time constant shorter than 3ns. Conversely, the Schottky diode shows a slower photoconductive rise and decay kinetics due to the material series resistance coupled with the junction capacitance. Moreover, a longer time constant tail is also evident in this case with a characteristic time of about 40ns, due to the presence of trap states localized at 0.2-0.3eV from the band edge. The detection dynamics has been evaluated by changing the beam energy density between 2×10-5 and 0.2mJ/mm2. The signal increases linearly in the case of the MSM device up to 0.001mJ/mm2, whereas, for a further intensity rise, the response shows a sublinear behavior. On the contrary, the Schottky diode showed a linear trend inside the reduced 2×10-3-1.5×10-2mJ/mm2 range.

  13. Electrical and optical properties of Fe doped AlGaN grown by molecular beam epitaxy

    SciTech Connect

    Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Kozhukhova, E. A.; Dabiran, A. M.; Chow, P. P.; Wowchak, A. M.; Pearton, S. J.

    2010-01-15

    Electrical and optical properties of AlGaN grown by molecular beam epitaxy were studied in the Al composition range 15%-45%. Undoped films were semi-insulating, with the Fermi level pinned near E{sub c}-0.6-0.7 eV. Si doping to (5-7)x10{sup 17} cm{sup -3} rendered the 15% Al films conducting n-type, but a large portion of the donors were relatively deep (activation energy 95 meV), with a 0.15 eV barrier for capture of electrons giving rise to strong persistent photoconductivity (PPC) effects. The optical threshold of this effect was {approx}1 eV. Doping with Fe to a concentration of {approx}10{sup 17} cm{sup -3} led to decrease in concentration of uncompensated donors, suggesting compensation by Fe acceptors. Addition of Fe strongly suppressed the formation of PPC-active centers in favor of ordinary shallow donors. For higher Al compositions, Si doping of (5-7)x10{sup 17} cm{sup -3} did not lead to n-type conductivity. Fe doping shifted the bandedge luminescence by 25-50 meV depending on Al composition. The dominant defect band in microcathodoluminescence spectra was the blue band near 3 eV, with the energy weakly dependent on composition.

  14. Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire

    NASA Astrophysics Data System (ADS)

    Bell, A.; Liu, R.; Ponce, F. A.; Amano, H.; Akasaki, I.; Cherns, D.

    2003-01-01

    Distinct crystalline and optical properties have been observed in Mg-doped Al0.03Ga0.97N grown on a patterned sapphire substrate; the pattern consisting of etched trenches along the sapphire <112¯0> direction. The epilayer has two distinct regions: one grown directly onto the sapphire mesa and the other an epitaxial lateral overgrowth (ELO) region that overhangs the trench. Transmission electron microscopy shows the presence of pyramidal defects as well as large dislocation densities in the region grown directly on sapphire. In contrast, the ELO region is defect free and contains no Mg-related pyramidal defects. Cathodoluminescence measurements show superior near-band-edge emission in the ELO region, suggesting that the emission is susceptible to nonradiative centers caused by the high defect density in the rest of the sample. The Mg-related donor-acceptor-pair emission is fairly uniform throughout the film, indicating that it is not affected by the nonradiative centers. These optical and structural properties of AlGaN are closely related to the direction of the growth front.

  15. Detection of halide ions with AlGaN /GaN high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Kang, B. S.; Ren, F.; Kang, M. C.; Lofton, C.; Tan, Weihong; Pearton, S. J.; Dabiran, A.; Osinsky, A.; Chow, P. P.

    2005-04-01

    AlGaN /GaN high electron mobility transistors (HEMTs) both with and without a Au gate are found to exhibit significant changes in channel conductance upon exposing the gate region to various halide ions. The polar nature of the halide ions leads to a change of surface charge in the gate region on the HEMT, producing a change in the surface potential at the semiconductor/liquid interface. HEMTs with a Au-gate electrode not only doubled the sensitivity of changing the channel conductance as compared to gateless HEMT, but also showed the opposite conductance behavior. When anions adsorbed on the Au, they produced a counter charge for electrovalence. These anions drag some counter ions from the bulk solution or create an image positive charge on the metal for the required neutrality. The gateless HEMTs can be used as sensors for a range of chemicals through appropriate modification with covalently bonded halide functional groups on the Au surface. This creates many possibilities to functionalize the surface for a wide range of integrated biological, chemical, and fluid monitoring sensors.

  16. Injection current dependences of electroluminescence transition energy in InGaN/GaN multiple quantum wells light emitting diodes under pulsed current conditions

    SciTech Connect

    Zhang, Feng; Ikeda, Masao Liu, Jianping; Zhang, Shuming; Zhou, Kun; Yang, Hui; Liu, Zongshun

    2015-07-21

    Injection current dependences of electroluminescence transition energy in blue InGaN/GaN multiple quantum wells light emitting diodes (LEDs) with different quantum barrier thicknesses under pulsed current conditions have been analyzed taking into account the related effects including deformation caused by lattice strain, quantum confined Stark effects due to polarization field partly screened by carriers, band gap renormalization, Stokes-like shift due to compositional fluctuations which are supposed to be random alloy fluctuations in the sub-nanometer scale, band filling effect (Burstein-Moss shift), and quantum levels in finite triangular wells. The bandgap renormalization and band filling effect occurring at high concentrations oppose one another, however, the renormalization effect dominates in the concentration range studied, since the band filling effect arising from the filling in the tail states in the valence band of quantum wells is much smaller than the case in the bulk materials. In order to correlate the carrier densities with current densities, the nonradiative recombination rates were deduced experimentally by curve-fitting to the external quantum efficiencies. The transition energies in LEDs both with 15 nm quantum barriers and 5 nm quantum barriers, calculated using full strengths of theoretical macroscopic polarization given by Barnardini and Fiorentini [Phys. Status Solidi B 216, 391 (1999)] are in excellent accordance with experimental results. The LED with 5 nm barriers has been shown to exhibit a higher transition energy and a smaller blue shift than those of LED with 15 nm barriers, which is mainly caused by the smaller internal polarization field in the quantum wells.

  17. Sensitive targeted multiple protein quantification based on elemental detection of quantum dots.

    PubMed

    Montoro Bustos, Antonio R; Garcia-Cortes, Marta; González-Iglesias, Hector; Ruiz Encinar, Jorge; Costa-Fernández, José M; Coca-Prados, Miguel; Sanz-Medel, Alfredo

    2015-06-16

    A generic strategy based on the use of CdSe/ZnS Quantum Dots (QDs) as elemental labels for protein quantification, using immunoassays with elemental mass spectrometry (ICP-MS), detection is presented. In this strategy, streptavidin modified QDs (QDs-SA) are bioconjugated to a biotinylated secondary antibody (b-Ab2). After a multi-technique characterization of the synthesized generic platform (QDs-SA-b-Ab2) it was applied to the sequential quantification of five proteins (transferrin, complement C3, apolipoprotein A1, transthyretin and apolipoprotein A4) at different concentration levels in human serum samples. It is shown how this generic strategy does only require the appropriate unlabeled primary antibody for each protein to be detected. Therefore, it introduces a way out to the need for the cumbersome and specific bioconjugation of the QDs to the corresponding specific recognition antibody for every target analyte (protein). Results obtained were validated with those obtained using UV-vis spectrophotometry and commercial ELISA Kits. As expected, ICP-MS offered one order of magnitude lower DL (0.23 fmol absolute for transferrin) than the classical spectrophotometric detection (3.2 fmol absolute). ICP-MS precision and detection limits, however turned out to be compromised by procedural blanks. The full analytical performance of the ICP-MS-based immunoassay proposed was assessed for detection of transferrin (Tf), present at the low ng mL(-1) range in a complex "model" synthetic matrix, where the total protein concentration was 100 μg mL(-1). Finally, ICP-MS detection allowed the quantitative control of all the steps of the proposed immunoassay, by computing mass balances obtained, and the development of a faster indirect immunoassay format where the plate wells were directly coated with the whole protein mixture sample. PMID:26002480

  18. An ultrafast spectroscopic and quantum mechanical investigation of multiple emissions in push-pull pyridinium derivatives bearing different electron donors.

    PubMed

    Carlotti, B; Benassi, E; Cesaretti, A; Fortuna, C G; Spalletti, A; Barone, V; Elisei, F

    2015-08-28

    A joint experimental and theoretical approach, involving state-of-the-art femtosecond fluorescence up-conversion measurements and quantum mechanical computations including vibronic effects, was employed to get a deep insight into the excited state dynamics of two cationic dipolar chromophores (Donor-π-Acceptor(+)) where the electron deficient portion is a N-methyl pyridinium and the electron donor a trimethoxyphenyl or a pyrene, respectively. The ultrafast spectroscopic investigation, and the time resolved area normalised emission spectra in particular, revealed a peculiar multiple emissive behaviour and allowed the distinct emitting states to be remarkably distinguished from solvation dynamics, occurring in water in a similar timescale. The two and three emissions experimentally detected for the trimethoxyphenyl and pyrene derivatives, respectively, were associated with specific local emissive minima in the potential energy surface of S1 on the ground of quantum-mechanical calculations. A low polar and planar Locally Excited (LE) state together with a highly polar and Twisted Intramolecular Charge Transfer (TICT) state is identified to be responsible for the dual emission of the trimethoxyphenyl compound. Interestingly, the more complex photobehaviour of the pyrenyl derivative was explained considering the contribution to the fluorescence coming not only from the LE and TICT states but also from a nearly Planar Intramolecular Charge Transfer (PICT) state, with both the TICT and the PICT generated from LE by progressive torsion around the quasi-single bond between the methylpyridinium and the ethene bridge. These findings point to an interconversion between rotamers for the pyrene compound taking place in its excited state against the Non-equilibrated Excited Rotamers (NEER) principle. PMID:26213993

  19. Multiple logic functions from extended blockade region in a silicon quantum-dot transistor

    SciTech Connect

    Lee, Youngmin; Lee, Sejoon Im, Hyunsik; Hiramoto, Toshiro

    2015-02-14

    We demonstrate multiple logic-functions at room temperature on a unit device of the Si single electron transistor (SET). Owing to the formation of the multi-dot system, the device exhibits the enhanced Coulomb blockade characteristics (e.g., large peak-to-valley current ratio ∼200) that can improve the reliability of the SET-based logic circuits. The SET displays a unique feature useful for the logic applications; namely, the Coulomb oscillation peaks are systematically shifted by changing either of only the gate or the drain voltage. This enables the SET to act as a multi-functional one-transistor logic gate with AND, OR, NAND, and XOR functions.

  20. Single-shot single-voxel lactate measurements using FOCI-LASER and a multiple-quantum filter.

    PubMed

    Payne, Geoffrey S; deSouza, Nandita M; Messiou, Christina; Leach, Martin O

    2015-04-01

    Measurement of tissue lactate using (1) H MRS is often confounded by overlap with intense lipid signals at 1.3 ppm. Single-voxel localization using PRESS is also compromised by the large chemical shift displacement between voxels for the 4.1 ppm (-CH) resonance and the 1.3 ppm -CH3 resonance, leading to subvoxels with signals of opposite phase and hence partial signal cancellation. To reduce the chemical shift displacement to negligible proportions, a modified semi-LASER sequence was written ("FOCI-LASER", abbreviated as fLASER) using FOCI pulses to permit high RF bandwidth even with the limited RF amplitude characteristic of clinical MRI scanners. A further modification, MQF-fLASER, includes a selective multiple-quantum filter to detect lactate and reject lipid signals. The sequences were implemented on a Philips 3 T Achieva TX system. In a solution of brain metabolites fLASER lactate signals were 2.7 times those of PRESS. MQF-fLASER lactate was 47% of fLASER (the theoretical maximum is 50%) but still larger than PRESS lactate. In oil, the main 1.3 ppm lipid peak was suppressed to less than 1%. Enhanced suppression was possible using increased gradient durations. The minimum detectable lactate concentration was approximately 0.5 mM. Coherence selection gradients needed to be at the magic angle to avoid large water signals derived from intermolecular multiple-quantum coherences. In pilot patient measurements, lactate peaks were often observed in brain tumours, but not in cervix tumours; lipids were effectively suppressed. In summary, compared with PRESS, the fLASER sequence yields greatly superior sensitivity for direct detection of lactate (and equivalent sensitivity for other metabolites), while the single-voxel single-shot MQF-fLASER sequence surpasses PRESS for lactate detection while eliminating substantial signals from lipids. This sequence will increase the potential for in vivo lactate measurement as a biomarker in targeted anti-cancer treatments as well as

  1. Effect of low-energy electron irradiation on the optical properties of structures containing multiple InGaN/GaN quantum well

    SciTech Connect

    Vergeles, P. S.; Yakimov, E. B.

    2015-02-15

    Data on the temperature dependence of the cathodoluminescence intensity in multiple InGaN/GaN quantum-well structures in the temperature range 80–300 K are reported. Unirradiated structures and structures irradiated with electrons with subthreshold energy are studied. It is shown that, upon irradiation, the temperature dependence becomes weaker. From analysis of the results obtained in this study and previously, it can be suggested that electron irradiation initiates the relaxation of strains produced in quantum wells due to the InGaN-GaN lattice mismatch.

  2. Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire

    NASA Astrophysics Data System (ADS)

    Hansen, M.; Fini, P.; Zhao, L.; Abare, A. C.; Coldren, L. A.; Speck, J. S.; DenBaars, S. P.

    2000-01-01

    InGaN multiple-quantum-well laser diodes have been fabricated on fully coalesced laterally epitaxially overgrown (LEO) GaN on sapphire. The laterally overgrown "wing" regions as well as the coalescence fronts contained few or no threading dislocations. Laser diodes fabricated on these low-dislocation-density regions showed a reduction in threshold current density from 10 to 4.8 kA/cm2 compared to those on conventional planar GaN on sapphire. The internal quantum efficiency also improved from 3% for laser diodes on conventional GaN on sapphire to 22% for laser diodes on LEO GaN on sapphire.

  3. Magneto-Circular Dichroism Spectra of Cd1-xMnxTe-MnTe Multiple Quantum Well Prepared by Ionized-Cluster Beam Technique

    NASA Astrophysics Data System (ADS)

    Anno, Hiroaki; Koyanagi, Tsuyoshi; Matsubara, Kakuei

    1993-01-01

    Cd1-xMnxTe-MnTe multiple quantum wells were successfully grown on a sapphire (0001) substrate by the ionized-cluster beam deposition technique. In the magneto-circular dichroism spectra, peaks are observed at the energies where shoulders appear in the optical absorption spectra. The peaks shift toward higher energies as the Cd1-xMnxTe well width decreases. The magneto-optical effect is attributed to the Zeeman splitting of mini-band levels due to the spin exchange interaction between Mn2+ magnetic ions and electrons strongly confined in quantum wells.

  4. Absorption enhancement through Fabry-Pérot resonant modes in a 430 nm thick InGaAs/GaAsP multiple quantum wells solar cell

    SciTech Connect

    Behaghel, B.; Tamaki, R.; Watanabe, K.; Sodabanlu, H.; Vandamme, N.; Dupuis, C.; Bardou, N.; Cattoni, A.; Okada, Y.; Sugiyama, M.; Collin, S.; Guillemoles, J.-F.

    2015-02-23

    We study light management in a 430 nm-thick GaAs p-i-n single junction solar cell with 10 pairs of InGaAs/GaAsP multiple quantum wells (MQWs). The epitaxial layer transfer on a gold mirror improves light absorption and increases the external quantum efficiency below GaAs bandgap by a factor of four through the excitation of Fabry-Perot resonances. We show a good agreement with optical simulation and achieve around 10% conversion efficiency. We demonstrate numerically that this promising result can be further improved by anti-reflection layers. This study paves the way to very thin MQWs solar cells.

  5. Effects of Si-doping on structural, electrical, and optical properties of polar and non-polar AlGaN epi-layers

    NASA Astrophysics Data System (ADS)

    Yang, Hongquan; Zhang, Xiong; Wang, Shuchang; Wang, Yi; Luan, Huakai; Dai, Qian; Wu, Zili; Zhao, Jianguo; Cui, Yiping

    2016-08-01

    The polar (0001)-oriented c-plane and non-polar (11 2 bar 0) -oriented a-plane wurtzite AlGaN epi-layers were successfully grown on polar (0001)-oriented c-plane and semi-polar (1 1 bar 02) -oriented r-plane sapphire substrates, respectively with various Si-doping levels in a low pressure metal organic chemical vapor deposition (MOCVD) system. The morphological, structural, electrical, and optical properties of the polar and non-polar AlGaN epi-layers were studied with scanning electron microscopy (SEM), X-ray diffraction (XRD), Hall effect, and Raman spectroscopy. The characterization results show that Si dopants incorporated into the polar and non-polar AlGaN films induced a relaxation of compressive residual strain and a generation of biaxial tensile strain on the surface in consequence of the dislocation climbing. In particular, it was found that the Si-induced compressive strain relaxation in the non-polar AlGaN samples can be promoted by the structural anisotropy as compared with the polar counterparts. The gradually increased relaxation of compressive residual strain in both polar and non-polar AlGaN samples with increasing Si-doping level was attributed to the Si-induced enhancement in the opportunity for the dislocations to interact and annihilate. This implies that the crystal quality for both polar and non-polar AlGaN epi-layers can be remarkably improved by Si-doping.

  6. Simultaneous quantitative detection of multiple tumor markers with a rapid and sensitive multicolor quantum dots based immunochromatographic test strip.

    PubMed

    Wang, Chunying; Hou, Fei; Ma, Yicai

    2015-06-15

    A novel multicolor quantum dots (QDs) based immunochromatographic test strip (ICTS) was developed for simultaneous quantitative detection of multiple tumor markers, by utilizing alpha fetoprotein (AFP) and carcinoembryonic antigen (CEA) as models. The immunosensor could realize simultaneous quantitative detection of tumor markers with only one test line and one control line on the nitrocellulose membrane (NC membrane) due to the introduction of multicolor QDs. In this method, a mixture of mouse anti-AFP McAb and mouse anti-CEA McAb was coated on NC membrane as test line and goat anti-mouse IgG antibody was coated as control line. Anti-AFP McAb-QDs546 conjugates and anti-CEA McAb-QDs620 conjugates were mixed and applied to the conjugate pad. Simultaneous quantitative detection of multiple tumor markers was achieved by detecting the fluorescence intensity of captured QDs labels on test line and control line using a test strip reader. Under the optimum conditions, AFP and CEA could be detected as low as 3 ng/mL and 2 ng/mL in 15 min with a sample volume of 80 μL, and no obvious cross-reactivity was observed. The immunosensor was validated with 130 clinical samples and in which it exhibited high sensitivity (93% for AFP and 87% for CEA) and specificity (94% for AFP and 97% for CEA). The immunosensor also demonstrated high recoveries (87.5-113% for AFP and 90-97.3% for CEA) and low relative standard deviations (RSDs) (2.8-6.2% for AFP and 4.9-9.6% for CEA) when testing spiked human serum. This novel multicolor QDs based ICTS provides an easy and rapid, simultaneous quantitative detecting strategy for point-of-care testing of tumor markers. PMID:25562743

  7. Multi-color quantum dot-based fluorescence immunoassay array for simultaneous visual detection of multiple antibiotic residues in milk.

    PubMed

    Song, Erqun; Yu, Mengqun; Wang, Yunyun; Hu, Weihua; Cheng, Dan; Swihart, Mark T; Song, Yang

    2015-10-15

    Antibiotic residues, which are among the most common contaminants in animal-based food products such as milk, have become a significant public health concern. Here, we combine a multicolor quantum dot (QD)-based immunofluorescence assay and an array analysis method to achieve simultaneous, sensitive and visual detection of streptomycin (SM), tetracycline (TC), and penicillin G (PC-G) in milk. Antibodies (Abs) for SM, TC and PC-G were conjugated to QDs with different emission wavelengths (QD 520 nm, QD 565 nm and QD 610 nm) to serve as detection probes (QD-Ab). Then a direct competitive fluorescent immunoassay was performed in antigen-coated microtiter plate wells for simultaneous qualitative and quantitative detection of SM, TC, and PC-G residues, based on fluorescence of the QD-Ab probes. The linear ranges for SM, TC and PC-G were 0.01-25 ng/mL, 0.01-25 ng/mL and 0.01-10 ng/mL, respectively, with detection limit of 5 pg/mL for each of them. Based on fluorescence of the QD-Ab probes, residues of the three antibiotics were determined visually and simultaneously. Compared with a commercial enzyme-linked immunosorbent assay kit, our method could achieve simultaneous analysis of multiple target antibiotics in multiple samples in a single run (high-throughput analysis) and improved accuracy and sensitivity for analysis of residues of the three antibiotics in authentic milk samples. This new analytical tool can play an important role in ameliorating the negative impact of the residual antibiotics on human health and the ecosystem. PMID:26002016

  8. Growth of AlGaN on silicon substrates: a novel way to make back-illuminated ultraviolet photodetectors

    NASA Astrophysics Data System (ADS)

    McClintock, Ryan; Razeghi, Manijeh

    2015-08-01

    AlGaN, with its tunable wide-bandgap is a good choice for the realization of ultraviolet photodetectors. AlGaN films tend to be grown on foreign substrates such as sapphire, which is the most common choice for back-illuminated devices. However, even ultraviolet opaque substrates like silicon holds promise because, silicon can be removed by chemical treatment to allow back-illumination,1 and it is a very low-cost substrate which is available in large diameters up to 300 mm. However, Implementation of silicon as the solar-blind PD substrates requires overcoming the lattice-mismatch (17%) with the AlxGa1-xN that leads to high density of dislocation and crack-initiating stress. In this talk, we report the growth of thick crack-free AlGaN films on (111) silicon substrates through the use of a substrate patterning and mask-less selective area regrowth. This technique is critical as it decouples the epilayers and the substrate and allows for crack-free growth; however, the masking also helps to reduce the dislocation density by inclining the growth direction and encouraging dislocations to annihilate. A back-illuminated p-i-n PD structure is subsequently grown on this high quality template layer. After processing and hybridizing the device we use a chemical process to selectively remove the silicon substrate. This removal has minimal effect on the device, but it removes the UV-opaque silicon and allows back-illumination of the photodetector. We report our latest results of back-illuminated solar-blind photodetectors growth on silicon.

  9. Temperature dependent photoluminescence from ZnO/MgZnO multiple quantum wells grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Misra, P.; Sharma, T. K.; Kukreja, L. M.

    2007-07-01

    We have studied temperature dependent photoluminescence (PL) from ZnO Multiple Quantum Wells (MQWs) of different well layer thicknesses in the range ˜1-4 nm grown on (0001) sapphire by a novel in-house developed buffer assisted pulsed laser deposition. At 10 K the PL peak shifted toward blue with decreasing well layer thickness and at constant well layer thickness the PL peak shifted towards red with increasing temperature. To the best of our knowledge we have observed for the first time an efficient room temperature (RT) PL emanating from such MQWs. The red shift of the PL peak with increasing temperature has been found to be due to the band gap shrinkage in accordance with the Varshni's empirical relation. The spectral linewidth was found to increase with increasing temperature due to the scattering of excitons with acoustic and optical phonons in different temperature regimes. Both at RT and at 10 K the PL peak shifted with respect to the well layer thickness in the range of ˜3.35-˜3.68 eV with decreasing thickness in agreement with the calculated values.

  10. Design and performance of a sensor system for detection of multiple chemicals using an external cavity quantum cascade laser

    NASA Astrophysics Data System (ADS)

    Phillips, Mark C.; Taubman, Matthew S.; Bernacki, Bruce E.; Cannon, Bret D.; Schiffern, John T.; Myers, Tanya L.

    2010-01-01

    We describe the performance of a sensor system designed for simultaneous detection of multiple chemicals with both broad and narrow absorption features. The sensor system consists of a broadly tunable external cavity quantum cascade laser (ECQCL), multi-pass Herriott cell, and custom low-noise electronics. The ECQCL features a fast wavelength tuning rate of 2265 cm-1/s (15660 nm/s) over the range of 1150-1270 cm-1 (7.87-8.70 μm), which permits detection of molecules with broad absorption features and dynamic concentrations, while the 0.2 cm-1 spectral resolution of the ECQCL system allows measurement of small molecules with atmospherically broadened absorption lines. High-speed amplitude modulation and low-noise electronics are used to improve the ECQCL performance for direct absorption measurements. We demonstrate simultaneous detection of Freon-134a (1,1,1,2-tetrafluoroethane), ammonia (NH3), and nitrous oxide (N2O) at low-ppb concentrations in field measurements of atmospheric chemical releases from a point source.

  11. Design and Performance of a Sensor System for Detection of Multiple Chemicals Using an External Cavity Quantum Cascade Laser

    SciTech Connect

    Phillips, Mark C.; Taubman, Matthew S.; Bernacki, Bruce E.; Cannon, Bret D.; Schiffern, John T.; Myers, Tanya L.

    2010-01-23

    We describe the performance of a sensor system designed for simultaneous detection of multiple chemicals with both broad and narrow absorption features. The sensor system consists of a broadly tunable external cavity quantum cascade laser (ECQCL), multi-pass Herriott cell, and custom low-noise electronics. The ECQCL features a rapid wavelength tuning rate of 2265 cm 1/s (15660 nm/s) over its tuning range of 1150-1270 cm 1 (7.87-8.70 μm), which permits detection of molecules with broad absorption features and dynamic concentrations, while the 0.2 cm-1 spectral resolution of the ECQCL system allows measurement of small molecules with atmospherically broadened absorption lines. High-speed amplitude modulation and low-noise electronics are used to improve the ECQCL performance for direct absorption measurements. We demonstrate simultaneous detection of Freon-134a (1,1,1,2-tetrafluoroethane), ammonia (NH3), and nitrous oxide (N2O) at low-ppb concentrations in field measurements of atmospheric chemical releases from a point source.

  12. Design and Room-Temperature Operation of GaAs/AlGaAs Multiple Quantum Well Nanowire Lasers.

    PubMed

    Saxena, Dhruv; Jiang, Nian; Yuan, Xiaoming; Mokkapati, Sudha; Guo, Yanan; Tan, Hark Hoe; Jagadish, Chennupati

    2016-08-10

    We present the design and room-temperature lasing characteristics of single nanowires containing coaxial GaAs/AlGaAs multiple quantum well (MQW) active regions. The TE01 mode, which has a doughnut-shaped intensity profile and is polarized predominantly in-plane to the MQWs, is predicted to lase in these nanowire heterostructures and is thus chosen for the cavity design. Through gain and loss calculations, we determine the nanowire dimensions required to minimize loss for the TE01 mode and determine the optimal thickness and number of QWs for minimizing the threshold sheet carrier density. In particular, we show that there is a limit to the minimum and maximum number of QWs that are required for room-temperature lasing. Based on our design, we grew nanowires of a suitable diameter containing eight uniform coaxial GaAs/AlGaAs MQWs. Lasing was observed at room temperature from optically pumped single nanowires and was verified to be from TE01 mode by polarization measurements. The GaAs MQW nanowire lasers have a threshold fluence that is a factor of 2 lower than that previously demonstrated for room-temperature GaAs nanowire lasers. PMID:27459233

  13. X-ray characterization of GaN/AlGaN multiple quantum wells for ultraviolet laser diodes

    NASA Astrophysics Data System (ADS)

    Korakakis, D.; Ludwig, K. F.; Moustakas, T. D.

    1998-03-01

    GaN/Al0.20Ga0.80N (50 Å/50 Å) multiple quantum wells (MQW) with 15 periods were grown on (0001) sapphire substrates by molecular beam epitaxy and evaluated by x-ray diffraction. To simulate an ultraviolet laser diode structure, the substrate was coated first with n-GaN as the bottom contact layer and n-Al0.25Ga0.75N as the corresponding cladding layer. The crystal structure of this system was investigated by studying the reciprocal lattice map of off-axis diffraction peaks as well as the θ-2θ pattern around the (0002) reflection. The MQW was found to be coherent and has the a-lattice parameter of the underlying Al0.25Ga0.75N. The good agreement between experimental and theoretical data in the relative intensity of up to third-order satellite peaks supports that the interfaces of the MQW are abrupt, and thus, interdiffusion of Ga and Al atoms at the growth temperature was negligible.

  14. Non-protein coding RNA-based genosensor with quantum dots as electrochemical labels for attomolar detection of multiple pathogens.

    PubMed

    Vijian, Dinesh; Chinni, Suresh V; Yin, Lee Su; Lertanantawong, Benchaporn; Surareungchai, Werasak

    2016-03-15

    The ability of a diagnostic test to detect multiple pathogens simultaneously is useful to obtain meaningful information for clinical treatment and preventive measures. We report a highly sensitive and specific electrochemical biosensor assay for simultaneous detection of three gene targets using quantum dots (QDs). The targets are novel non-protein coding RNA (npcRNA) sequences of Vibrio cholerae, Salmonella sp. and Shigella sp., which cause diarrheal diseases. QDs (PbS, CdS, ZnS) were synthesized and functionalized with DNA probes that were specific to each pathogen. Electrochemical detection of QDs was performed using square wave anodic stripping voltammetry (SWASV). The QDs gave distinct peaks at 0.5 V (PbS), 0.75 V (CdS) and 1.1 V (ZnS). There was no interference in signal response when all three QDs were mixed and detected simultaneously. The detection limits of single and multiplex assays with linear targets and PCR products were in the attomolar ranges. The high assay sensitivity, in combination with specific npcRNA sequences as novel diagnostic targets, makes it a viable tool for detecting pathogens from food, environment and clinical samples. PMID:26513287

  15. Photoreflectance and differential surface photovoltage studies of δ-doped GaAs/AlAs multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Cechavičius, Bronislovas; Kavaliauskas, Julius; Krivaite, Gene; Seliuta, Dalius; Valusis, Gintaras; Halsall, Matthew P.; Steer, Matthew J.; Harrison, Paul

    2005-08-01

    We measured the photoreflectance (PR) and wavelength-modulated differential surface photovoltage (DSPV) spectra of δ-doped GaAs/AlAs multiple quantum wells (MQW) with different well widths and doping levels. We demonstrated that PR and DSPV are powerful contactless tools for the characterization of MQW structures. We observed Franz-Keldysh oscillations in the PR spectra, which enabled us to determine the built-in electric fields in the GaAs/AlAs MQW structures. As it turned out, in the GaAs buffedcap layers the field strength is in the range of 18-20 kV/cm. It was found that a buried interface rather than the structure surface very probably governs the SPV effect. Sharp features associated with excitonic optical transitions were revealed in both, PR and DSPV spectra. From the line shape analysis of the modulation spectra, we estimated optical transition energies and broadening parameters. The energy levels and interband transition energies calculated by the transfer matrix method are in good agreement with the experimental values. The influence of the doping on the broadening of exciton resonances was observed and investigated.

  16. Flashlamp pumped oscillator-amplifier Nd:YAG system mode-locked using multiple quantum well saturable absorber

    NASA Astrophysics Data System (ADS)

    Kubecek, Vaclav; Jelinkova, Helena; Dombrovsky, Andrej; Diels, Jean-Claude; Stintz, Andreas

    2004-09-01

    We report on flashlamp pumped oscillator - three amplifiers Nd:YAG picosecond laser system in which the liquid saturable dye used for passive mode locking is replaced by semiconductor saturable absorber with multiple quantum well (MQW) structure. This element placed at Brewster angle inside a laser resonator had 100 layers of absorber and therefore it has high nonlinearity and is suitable for high power Q-switched and mode locked operation. The short pulse train from oscillator contained only 5-6 pulses with total energy of 3 mJ in single transversal mode, the pulse duration was 80 ps. After amplification, the maximum energy of the pulse train was 180 mJ. In the regime of the amplification of a single selected pulse the energy on the output of the third amplifier was 50 mJ. Operation of the oscillator in active-passive regime of mode locking using an additional acousto-optic mode-locker leads to improvement of reproducibility and stability of output parameters.

  17. Controlling optical polarization of {11-22} semipolar multiple quantum wells using relaxed underlying InGaN buffer layers

    NASA Astrophysics Data System (ADS)

    Okada, Narihito; Okamura, Yasuhiro; Uchida, Katsumi; Tadatomo, Kazuyuki

    2016-08-01

    We successfully fabricated {11-22} multiple quantum wells (MQWs) having different emission peak wavelengths on partially or completely relaxed thick InGaN buffer layers with different In contents formed on a semipolar {11-22} GaN layer, which was grown on a patterned r-plane sapphire substrate. The polarization properties changed significantly with changing in In content and thickness for InGaN buffer layer. For the same In content of the InGaN buffer layer, the optical polarization changed with an increase in the thickness of the underlying InGaN buffer layer, indicating a change in the relaxation ratio of the InGaN buffer layer. Similarly, for the same thickness of the InGaN buffer layer, the optical polarization changed by changing In content of the InGaN buffer layer. Thus, the degree of optical polarization could be controlled by varying the In content of the underlying InGaN buffer layer.

  18. The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Lundin, W. V.; Zavarin, E. E.; Brunkov, P. N.; Yagovkina, M. A.; Troshkov, S. I.; Sakharov, A. V.; Nikolaev, A. E.; Tsatsulnikov, A. F.

    2016-04-01

    We have studied the influence of technological parameters on the surface morphology and development of mechanical stresses in Al(Ga)N layers during their growth by metalorganic vapor phase epitaxy (MOVPE) on sapphire substrates. Minimization of tensile stresses under conditions of a retained atomically smooth surface can be achieved by using a combination of factors including (i) nitridation of substrate in ammonia flow, (ii) formation of two-layer AlN-Al(Ga)N structures by introducing a small amount (several percent) of Ga after growth of a thin AlN layer, and (iii) reduction of ammonia flow during growth of an Al(Ga)N layer.

  19. Observation of Room Temperature Photoluminescence from Asymmetric CuGaO2/ZnO/ZnMgO Multiple Quantum Well Structures.

    PubMed

    Aneesh, P M; Jayaraj, M K; Reshmi, R; Ajimsha, R S; Kukreja, L M; Aldrin, A; Rojas, F; Bertomeu, J; López-Vidrier, J; Hernández, S

    2015-05-01

    Asymmetric (CuGaO2/ZnO/ZnMgO) and symmetric (ZnMgO/ZnO/ZnMgO) multiple quantum well (MQW) structures were successfully fabricated using pulsed laser deposition (PLD) and their comparison were made. Efficient room temperature photoluminescent (PL) emission was observed from these MQWs and temperature dependent luminescence of asymmetric and symmetric MQWs can be explained using the existing theories. A systematic blue shift was observed in both MQWs with decrease in the confinement layer thickness which could be attributed to the quantum confinement effects. The PL emission from asymmetric and symmetric MQW structures were blue shifted compared to 150 nm thick ZnO thin film grown by PLD due to quantum confinement effects. PMID:26505029

  20. M-plane core-shell InGaN/GaN multiple-quantum-wells on GaN wires for electroluminescent devices.

    PubMed

    Koester, Robert; Hwang, Jun-Seok; Salomon, Damien; Chen, Xiaojun; Bougerol, Catherine; Barnes, Jean-Paul; Dang, Daniel Le Si; Rigutti, Lorenzo; de Luna Bugallo, Andres; Jacopin, Gwénolé; Tchernycheva, Maria; Durand, Christophe; Eymery, Joël

    2011-11-01

    Nonpolar InGaN/GaN multiple quantum wells (MQWs) grown on the {11-00} sidewalls of c-axis GaN wires have been grown by organometallic vapor phase epitaxy on c-sapphire substrates. The structural properties of single wires are studied in detail by scanning transmission electron microscopy and in a more original way by secondary ion mass spectroscopy to quantify defects, thickness (1-8 nm) and In-composition in the wells (∼16%). The core-shell MQW light emission characteristics (390-420 nm at 5 K) were investigated by cathodo- and photoluminescence demonstrating the absence of the quantum Stark effect as expected due to the nonpolar orientation. Finally, these radial nonpolar quantum wells were used in room-temperature single-wire electroluminescent devices emitting at 392 nm by exploiting sidewall emission. PMID:21967509

  1. Thermo-piezo-electro-mechanical simulation of AlGaN (aluminum gallium nitride) / GaN (gallium nitride) High Electron Mobility Transistors

    NASA Astrophysics Data System (ADS)

    Stevens, Lorin E.

    Due to the current public demand of faster, more powerful, and more reliable electronic devices, research is prolific these days in the area of high electron mobility transistor (HEMT) devices. This is because of their usefulness in RF (radio frequency) and microwave power amplifier applications including microwave vacuum tubes, cellular and personal communications services, and widespread broadband access. Although electrical transistor research has been ongoing since its inception in 1947, the transistor itself continues to evolve and improve much in part because of the many driven researchers and scientists throughout the world who are pushing the limits of what modern electronic devices can do. The purpose of the research outlined in this paper was to better understand the mechanical stresses and strains that are present in a hybrid AlGaN (Aluminum Gallium Nitride) / GaN (Gallium Nitride) HEMT, while under electrically-active conditions. One of the main issues currently being researched in these devices is their reliability, or their consistent ability to function properly, when subjected to high-power conditions. The researchers of this mechanical study have performed a static (i.e. frequency-independent) reliability analysis using powerful multiphysics computer modeling/simulation to get a better idea of what can cause failure in these devices. Because HEMT transistors are so small (micro/nano-sized), obtaining experimental measurements of stresses and strains during the active operation of these devices is extremely challenging. Physical mechanisms that cause stress/strain in these structures include thermo-structural phenomena due to mismatch in both coefficient of thermal expansion (CTE) and mechanical stiffness between different materials, as well as stress/strain caused by "piezoelectric" effects (i.e. mechanical deformation caused by an electric field, and conversely voltage induced by mechanical stress) in the AlGaN and GaN device portions (both

  2. Structure of CdTe-Cd1 - xMnxTe multiple quantum wells grown on (001) InSb substrates by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Williams, G. M.; Cullis, A. G.; Whitehouse, C. R.; Ashenford, D. E.; Lunn, B.

    1989-09-01

    Molecular beam epitaxy has been used to prepare multiple quantum well structures of CdTe/Cd1-xMnxTe on (001) InSb substrates. The growth of such a system on InSb allows the use of particularly low growth temperatures, hence minimizing interdiffusion effects. This study presents the first transmission electron microscope investigation of this multilayer system grown on InSb. The work clearly demonstrates that multiple quantum wells of high structural quality can be grown reproducibly over a wide range of layer thicknesses. The importance of efficient substrate surface cleaning prior to growth is demonstrated. In order to grow high structural quality multilayers, the choice of buffer layer is also important and a possible explanation for this observation is given.

  3. In vivo single-shot three-dimensionally localized multiple quantum spectroscopy of GABA in the human brain with improved spectral selectivity

    NASA Astrophysics Data System (ADS)

    Choi, In-Young; Lee, Sang-Pil; Shen, Jun

    2005-01-01

    A single-shot multiple quantum filtering method is developed that uses two double-band frequency selective pulses for enhanced spectral selectivity in combination with a slice-selective 90°, a slice-selective universal rotator 90°, and a spectral-spatial pulse composed of two slice-selective universal rotator 45° pulses for single-shot three-dimensional localization. The use of this selective multiple quantum filtering method for C3 and C4 methylene protons of GABA resulted in improved spectral selectivity for GABA and effective suppression of overlapping signals such as creatine and glutathione in each single scan, providing reliable measurements of the GABA doublet in all subjects. The concentration of GABA was measured to be 0.7 ± 0.2 μmol/g (means ± SD, n = 15) in the fronto-parietal region of the human brain in vivo.

  4. Accurate molecular dynamics and nuclear quantum effects at low cost by multiple steps in real and imaginary time: Using density functional theory to accelerate wavefunction methods

    NASA Astrophysics Data System (ADS)

    Kapil, V.; VandeVondele, J.; Ceriotti, M.

    2016-02-01

    The development and implementation of increasingly accurate methods for electronic structure calculations mean that, for many atomistic simulation problems, treating light nuclei as classical particles is now one of the most serious approximations. Even though recent developments have significantly reduced the overhead for modeling the quantum nature of the nuclei, the cost is still prohibitive when combined with advanced electronic structure methods. Here we present how multiple time step integrators can be combined with ring-polymer contraction techniques (effectively, multiple time stepping in imaginary time) to reduce virtually to zero the overhead of modelling nuclear quantum effects, while describing inter-atomic forces at high levels of electronic structure theory. This is demonstrated for a combination of MP2 and semi-local DFT applied to the Zundel cation. The approach can be seamlessly combined with other methods to reduce the computational cost of path integral calculations, such as high-order factorizations of the Boltzmann operator or generalized Langevin equation thermostats.

  5. Optically confined polarized resonance Raman studies in identifying crystalline orientation of sub-diffraction limited AlGaN nanostructure

    SciTech Connect

    Sivadasan, A. K. Patsha, Avinash; Dhara, Sandip

    2015-04-27

    An optical characterization tool of Raman spectroscopy with extremely weak scattering cross section tool is not popular to analyze scattered signal from a single nanostructure in the sub-diffraction regime. In this regard, plasmonic assisted characterization tools are only relevant in spectroscopic studies of nanoscale object in the sub-diffraction limit. We have reported polarized resonance Raman spectroscopic (RRS) studies with strong electron-phonon coupling to understand the crystalline orientation of a single AlGaN nanowire of diameter ∼100 nm. AlGaN nanowire is grown by chemical vapor deposition technique using the catalyst assisted vapor-liquid-solid process. The results are compared with the high resolution transmission electron microscopic analysis. As a matter of fact, optical confinement effect due to the dielectric contrast of nanowire with respect to that of surrounding media assisted with electron-phonon coupling of RRS is useful for the spectroscopic analysis in the sub-diffraction limit of 325 nm (λ/2N.A.) using an excitation wavelength (λ) of 325 nm and near ultraviolet 40× far field objective with a numerical aperture (N.A.) value of 0.50.

  6. Radiation induced crosslinking in a silica-filled silicone elastomer as investigated by multiple quantum H NMR

    SciTech Connect

    Maxwell, R S; Chinn, S C; Solyom, D; Cohenour, R

    2005-05-24

    DC745 is a commercially available silicone elastomer consisting of dimethyl, methylphenyl, and vinyl-methyl siloxane monomers crosslinked with a peroxide vinyl specific curing agent. It is generally considered to age gracefully and to be resistant to chemical and thermally harsh environments. However, little data exists on the radiation resistance of this commonly used silicone elastomer. We report static {sup 1}H NMR studies of residual dipolar couplings in DC745 solid elastomers subject to exposure to ionizing gamma radiation. {sup 1}H spin-echo NMR data shows that with increasing dose, the segmental dynamics decrease is consistent with radiatively induced crosslinking. {sup 1}H multiple quantum NMR was used to assess changes in the network structure and observed the presence of a bimodal distribution of residual dipolar couplings, <{Omega}{sub d}>, that were dose dependent. The domain with the lower <{Omega}{sub d}> has been assigned to the polymer network while the domain with the higher <{Omega}{sub d}> has been assigned to polymer chains interacting with the inorganic filler surfaces. In samples exposed to radiation, the residual dipolar couplings in both reservoirs were observed to increase and the populations were observed to be dose dependent. The NMR results are compared to Differential Scanning Calorimetry (DSC) and a two-step solvent swelling technique. The solvent swelling data lend support to the interpretation of the NMR results and the DSC data show both a decrease in the melt temperature and the heat of fusion with cumulative dose, consistent with radiative crosslinking. In addition, DSC thermograms obtained following a 3 hr isothermal soak at -40 C showed the presence of a second melt feature at T{sub m} {approx} -70 C consistent with a network domain with significantly reduced segmental motion.

  7. Highly efficient blue organic light-emitting diodes using quantum well-like multiple emissive layer structure

    NASA Astrophysics Data System (ADS)

    Yoon, Ju-An; Kim, You-Hyun; Kim, Nam Ho; Yoo, Seung Il; Lee, Sang Youn; Zhu, Fu Rong; Kim, Woo Young

    2014-04-01

    In this study, the properties of blue organic light-emitting diodes (OLEDs), employing quantum well-like structure (QWS) that includes four different blue emissive materials of 4,4'-bis(2,2'-diphenylyinyl)-1,1'-biphenyl (DPVBi), 9,10-di(naphth-2-yl)anthracene (ADN), 2-( N, N-diphenyl-amino)-6-[4-( N, N-diphenyl amine)styryl]naphthalene (DPASN), and bis(2-methyl-8-quinolinolate)-4-(phenyl phenolato) aluminum (BAlq), were investigated. Conventional QWS blue OLEDs composed of multiple emissive layers and charge blocking layer with lower highest occupied molecular orbital (HOMO)-lowest unoccupied molecular orbital (LUMO) energy level, and devices with triple emissive layers for more significant hole-electron recombination and a wider region for exciton generation were designed. The properties of triple emissive layered blue OLEDs with the structure of indium tin oxide (ITO) / N, N'-diphenyl- N, N'-bis(1-naphthyl-phenyl)-(1,1'-biphenyl)-4,4'-diamine (NPB) (700 Ǻ)/X (100 Ǻ)/BAlq (100 Ǻ)/X (100 Ǻ)/4,7-diphenyl-1,10-phenanthroline (Bphen) (300 Ǻ)/lithium quinolate (Liq) (20 Ǻ)/aluminum (Al) (1,200 Ǻ) (X = DPVBi, ADN, DPASN) were examined. HOMO-LUMO energy levels of DPVBi, ADN, DPASN, and BAlq are 2.8 to 5.9, 2.6 to 5.6, 2.3 to 5.2, and 2.9 to 5.9 eV, respectively. The OLEDs with DPASN/BAlq/DPASN QWS with maximum luminous efficiency of 5.32 cd/A was achieved at 3.5 V.

  8. Investigation of network heterogeneities in filled, trimodal, highly functional PDMS networks by 1H Multiple Quantum NMR

    SciTech Connect

    Gjersing, E; Chinn, S; Maxwell, R S; Herberg, J; Eastwood, E; Bowen, D; Stephens, T

    2006-09-06

    The segmental order and dynamics of polymer network chains in a filled, tri-modal silicone network have been studied by static 1H Multiple Quantum (MQ) NMR methods to gain insight into the structure property relationships. The materials were synthesized with two different types of crosslinks, with functionalities of 4 and near 60. The network chains were composed of distributions of high, low, and medium molecular weight chains. Crosslinking was accomplished by standard acid catalyzed reactions. MQ NMR methods have detected domains with residual dipolar couplings (<{Omega}{sub d}>) of near 4 kRad/s and 1 kRad/s assigned to (a) the shorter polymer chains and chains near the multifunctional ({phi}=60) crosslinking sites and to (b) the longer polymer chains far from these sites. Three structural variables were systematically varied and the mechanical properties and distributions of residual dipolar couplings measured in order to gain insight in to the network structural motifs that contribute significantly to the composite properties. The partitioning of and the average values of the residual dipolar couplings for the two domains were observed to be dependent on formulation variable and provided increased insight into the mechanical properties of these materials which are unavailable from swelling and spin-echo methods. The results of this study suggest that the domains with high crosslink density contribute significantly to the high strain modulus, while the low crosslink density domains do not. This is in agreement with theories and experimental studies on silicone bimodal networks over the last 20 years. In-situ MQ-NMR of swollen sample suggests that the networks deform non-affinely, in agreement with theory. The NMR experiments shown here provide increased ability to characterize multimodal networks of typical engineering silicone materials and to gain significant insight into structure-property relationships.

  9. Investigation of network heterogeneities in filled, trimodal, highly functional PDMS networks by 1H Multiple Quantum NMR

    SciTech Connect

    Maxwell, R; Gjersing, E; Chinn, S; Giuliani, J; Herberg, J; Eastwood, E; Bowen, D; Stephens, T

    2007-03-20

    The segmental order and dynamics of polymer network chains in a filled, tri-modal silicone foam network have been studied by static 1H Multiple Quantum (MQ) NMR methods to gain insight into the structure property relationships. The foam materials were synthesized with two different types of crosslinks, with functionalities, {phi}, of 4 and near 60. The network chains were composed of distributions of high, low, and medium molecular weight chains. Crosslinking was accomplished by standard acid catalyzed reactions. MQ NMR methods have detected domains with residual dipolar couplings (<{Omega}{sub d}>) of near 4 kRad/s and 1 kRad/s assigned to (a) the shorter polymer chains and chains near the multifunctional (f=60) crosslinking sites and to (b) the longer polymer chains far from these sites. Three structural variables were systematically varied and the mechanical properties via compression and distributions of residual dipolar couplings measured in order to gain insight in to the network structural motifs that contribute significantly to the composite properties. The partitioning of and the average values of the residual dipolar couplings for the two domains were observed to be dependent on formulation variable and provided increased insight into the network structure of these materials which are unavailable from swelling and spin-echo methods. The results of this study suggest that the domains with high crosslink density contribute significantly to the high strain modulus, while the low crosslink density domains do not. This is in agreement with theories and experimental studies on silicone bimodal networks over the last 20 years. In-situ MQ-NMR of swollen sample suggests that the networks deform heterogeneously and non-affinely. The heterogeneity of the deformation process was observed to depend on the amount of the high functionality crosslinking site PMHS. The NMR experiments shown here provide increased ability to characterize multimodal networks of typical

  10. Highly efficient blue organic light-emitting diodes using quantum well-like multiple emissive layer structure

    PubMed Central

    2014-01-01

    In this study, the properties of blue organic light-emitting diodes (OLEDs), employing quantum well-like structure (QWS) that includes four different blue emissive materials of 4,4′-bis(2,2′-diphenylyinyl)-1,1′-biphenyl (DPVBi), 9,10-di(naphth-2-yl)anthracene (ADN), 2-(N,N-diphenyl-amino)-6-[4-(N,N-diphenyl amine)styryl]naphthalene (DPASN), and bis(2-methyl-8-quinolinolate)-4-(phenyl phenolato) aluminum (BAlq), were investigated. Conventional QWS blue OLEDs composed of multiple emissive layers and charge blocking layer with lower highest occupied molecular orbital (HOMO)-lowest unoccupied molecular orbital (LUMO) energy level, and devices with triple emissive layers for more significant hole-electron recombination and a wider region for exciton generation were designed. The properties of triple emissive layered blue OLEDs with the structure of indium tin oxide (ITO) /N,N′-diphenyl-N,N′-bis(1-naphthyl-phenyl)-(1,1′-biphenyl)-4,4′-diamine (NPB) (700 Ǻ)/X (100 Ǻ)/BAlq (100 Ǻ)/X (100 Ǻ)/4,7-diphenyl-1,10-phenanthroline (Bphen) (300 Ǻ)/lithium quinolate (Liq) (20 Ǻ)/aluminum (Al) (1,200 Ǻ) (X = DPVBi, ADN, DPASN) were examined. HOMO-LUMO energy levels of DPVBi, ADN, DPASN, and BAlq are 2.8 to 5.9, 2.6 to 5.6, 2.3 to 5.2, and 2.9 to 5.9 eV, respectively. The OLEDs with DPASN/BAlq/DPASN QWS with maximum luminous efficiency of 5.32 cd/A was achieved at 3.5 V. PMID:24940170

  11. Growth control and design principles of self-assembled quantum dot multiple layer structures for photodetector applications

    NASA Astrophysics Data System (ADS)

    Asano, Tetsuya

    Self-assembled quantum dots (SAQDs) formed by lattice-mismatch strain-driven epitaxy are currently the most advanced nanostructure-based platform for high performance optoelectronic applications such as lasers and photodetectors. While the QD lasers have realized the best performance in terms of threshold current and temperature stability, the performance of QD photodetectors (QDIPs) has not surpassed that of quantum well (QW) photodetectors. This is because the requirement of maximal photon absorption for photodetectors poses the challenge of forming an appropriately-doped large number of uniform multiple SAQD (MQD) layers with acceptable structural defect (dislocation etc.) density. This dissertation addresses this challenge and, through a combination of innovative approach to control of defects in MQD growth and judicious placement of SAQDs in a resonant cavity, shows that SAQD based quantum dot infrared photodetectors (QDIPs) can be made competitive with their quantum well counterparts. Specifically, the following major elements were accomplished: (i) the molecular beam epitaxy (MBE) growth of dislocation-free and uniform InAs/InAlGaAs/GaAs MQD strained structures up to 20-period, (ii) temperature-dependent photo- and dark-current based analysis of the electron density distribution inside the MQD structures for various doping schemes, (iii) deep level transient spectroscopy based identification of growth procedure dependent deleterious deep traps in SAQD structures and their reduction, and (iv) the use of an appropriately designed resonant cavity (RC) and judicious placement of the SAQD layers for maximal enhancement of photon absorption to realize over an order of magnitude enhancement in QDIP detectivity. The lattermost demonstration indicates that implementation of the growth approach and resonant cavity strategy developed here while utilizing the currently demonstrated MIR and LWIR QDIPs with detectivities > 10 10 cmHz1/2/W at ˜ 77 K will enable RC

  12. AlGaN UV LED and Photodiodes Radiation Hardness and Space Qualifications and Their Applications in Space Science and High Energy Density Physics

    SciTech Connect

    Sun, K. X.

    2011-05-31

    This presentation provides an overview of robust, radiation hard AlGaN optoelectronic devices and their applications in space exploration & high energy density physics. Particularly, deep UV LED and deep UV photodiodes are discussed with regard to their applications, radiation hardness and space qualification. AC charge management of UV LED satellite payload instruments, which were to be launched in late 2012, is covered.

  13. High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

    NASA Astrophysics Data System (ADS)

    Reddy, Pramod; Washiyama, Shun; Kaess, Felix; Hayden Breckenridge, M.; Hernandez-Balderrama, Luis H.; Haidet, Brian B.; Alden, Dorian; Franke, Alexander; Sarkar, Biplab; Kohn, Erhard; Collazo, Ramon; Sitar, Zlatko

    2016-04-01

    In this work, we employed X-ray photoelectron spectroscopy to determine the band offsets and interface Fermi level at the heterojunction formed by stoichiometric silicon nitride deposited on AlxGa1-xN (of varying Al composition "x") via low pressure chemical vapor deposition. Silicon nitride is found to form a type II staggered band alignment with AlGaN for all Al compositions (0 ≤ x ≤ 1) and present an electron barrier into AlGaN even at higher Al compositions, where Eg(AlGaN) > Eg(Si3N4). Further, no band bending is observed in AlGaN for x ≤ 0.6 and a reduced band bending (by ˜1 eV in comparison to that at free surface) is observed for x > 0.6. The Fermi level in silicon nitride is found to be at 3 eV with respect to its valence band, which is likely due to silicon (≡Si0/-1) dangling bonds. The presence of band bending for x > 0.6 is seen as a likely consequence of Fermi level alignment at Si3N4/AlGaN hetero-interface and not due to interface states. Photoelectron spectroscopy results are corroborated by current-voltage-temperature and capacitance-voltage measurements. A shift in the interface Fermi level (before band bending at equilibrium) from the conduction band in Si3N4/n-GaN to the valence band in Si3N4/p-GaN is observed, which strongly indicates a reduction in mid-gap interface states. Hence, stoichiometric silicon nitride is found to be a feasible passivation and dielectric insulation material for AlGaN at any composition.

  14. Dislocation Reduction and Stress Relaxation of GaN and InGaN Multiple Quantum Wells with Improved Performance via Serpentine Channel Patterned Mask.

    PubMed

    Ji, Qingbin; Li, Lei; Zhang, Wei; Wang, Jia; Liu, Peichi; Xie, Yahong; Yan, Tongxing; Yang, Wei; Chen, Weihua; Hu, Xiaodong

    2016-08-24

    The existence of high threading dislocation density (TDD) in GaN-based epilayers is a long unsolved problem, which hinders further applications of defect-sensitive GaN-based devices. Multiple-modulation of epitaxial lateral overgrowth (ELOG) is used to achieve high-quality GaN template on a novel serpentine channel patterned sapphire substrate (SCPSS). The dislocation blocking brought by the serpentine channel patterned mask, coupled with repeated dislocation bending, can reduce the dislocation density to a yet-to-be-optimized level of ∼2 × 10(5) to 2 × 10(6) cm(-2). About 80% area utilization rate of GaN with low TDD and stress relaxation is obtained. The periodical variations of dislocation density, optical properties and residual stress in GaN-based epilayers on SCPSS are analyzed. The quantum efficiency of InGaN/GaN multiple quantum wells (MQWs) on it can be increased by 52% compared with the conventional sapphire substrate. The reduced nonradiative recombination centers, the enhanced carrier localization, and the suppressed quantum confined Stark effect, are the main determinants of improved luminous performance in MQWs on SCPSS. This developed ELOG on serpentine shaped mask needs no interruption and regrowth, which can be a promising candidate for the heteroepitaxy of semipolar/nonpolar GaN and GaAs with high quality. PMID:27484167

  15. Influence of substrate misorientation on the photoluminescence and structural properties of InGaAs/GaAsP multiple quantum wells.

    PubMed

    Dong, Hailiang; Sun, Jing; Ma, Shufang; Liang, Jian; Lu, Taiping; Liu, Xuguang; Xu, Bingshe

    2016-03-21

    InGaAs/GaAsP multiple quantum wells (MQWs) were grown by metal-organic chemical vapor deposition on vicinal GaAs (001) substrates with different miscut angles of 0°, 2° and 15° towards [110]. The crystal structures of InGaAs/GaAsP were characterized by high-resolution X-ray diffraction and Raman spectroscopy. The surface morphologies of InGaAs/GaAsP MQWs were observed by atomic force microscopy. The mechanisms for step flow, step bunching and pyramid growth on 0°, 2° and 15° misoriented substrates were discussed. The results provide a comprehensive phenomenological understanding of the self-ordering mechanism of vicinal GaAs substrates, which could be harnessed for designing the quantum optical properties of low-dimensional systems. From low-temperature photoluminescence, it was observed that the luminescence from the MQWs grown on a vicinal surface exhibits a red-shift with respect to the 0° case. An extra emission was observed from the 2° and 15° off samples, indicating the characteristics of quantum wire and pyramidal self-controlled quantum-dot systems, respectively. Its absence from the PL spectrum on 0° surfaces indicates that indium segregation is modified on the surfaces. The relationship between InGaAs/GaAsP MQWs grown on vicinal substrates and their optical and structural properties was explained, which provides a technological basis for obtaining different self-controlled nanostructures. PMID:26926840

  16. Influence of substrate misorientation on the photoluminescence and structural properties of InGaAs/GaAsP multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Dong, Hailiang; Sun, Jing; Ma, Shufang; Liang, Jian; Lu, Taiping; Liu, Xuguang; Xu, Bingshe

    2016-03-01

    InGaAs/GaAsP multiple quantum wells (MQWs) were grown by metal-organic chemical vapor deposition on vicinal GaAs (001) substrates with different miscut angles of 0°, 2° and 15° towards [110]. The crystal structures of InGaAs/GaAsP were characterized by high-resolution X-ray diffraction and Raman spectroscopy. The surface morphologies of InGaAs/GaAsP MQWs were observed by atomic force microscopy. The mechanisms for step flow, step bunching and pyramid growth on 0°, 2° and 15° misoriented substrates were discussed. The results provide a comprehensive phenomenological understanding of the self-ordering mechanism of vicinal GaAs substrates, which could be harnessed for designing the quantum optical properties of low-dimensional systems. From low-temperature photoluminescence, it was observed that the luminescence from the MQWs grown on a vicinal surface exhibits a red-shift with respect to the 0° case. An extra emission was observed from the 2° and 15° off samples, indicating the characteristics of quantum wire and pyramidal self-controlled quantum-dot systems, respectively. Its absence from the PL spectrum on 0° surfaces indicates that indium segregation is modified on the surfaces. The relationship between InGaAs/GaAsP MQWs grown on vicinal substrates and their optical and structural properties was explained, which provides a technological basis for obtaining different self-controlled nanostructures.

  17. Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Wu, X. H.; Elsass, C. R.; Abare, A.; Mack, M.; Keller, S.; Petroff, P. M.; DenBaars, S. P.; Speck, J. S.; Rosner, S. J.

    1998-02-01

    In the growth of InGaN/GaN multiple quantum well (MQW) structures, a novel defect (called the "V-defect") initiates at threading dislocations in one of the first quantum wells in a MQW stack. This defect is common to almost all InGaN MQW heterostructures. The nature of the V-defect was evaluated using transmission electron microscopy (TEM), scanning TEM (STEM), and low-temperature cathodoluminescence (CL) on a series of In0.20Ga0.80N/GaN MQW samples. The structure of the V-defect includes buried side-wall quantum wells (on the {101¯1} planes) and an open hexagonal inverted pyramid which is defined by the six {101¯1} planes. Thus, in cross section this defect appears as an open "V". The formation of the V-defect is kinetically controlled by reduced Ga incorporation on the pyramid walls ({101¯1} planes). The V-defect is correlated with the localized excitonic recombination centers that give rise to a long-wavelength shoulder in photoluminescence (PL) and CL spectra. This long-wavelength shoulder has the following characteristics: (i) its intensity is correlated with the side-wall quantum wells; (ii) the temperature independence of the full width at half maximum strongly supports a localized exciton recombination process.

  18. Two-component model in quantum statistical framework compared with multiplicity distributions in proton-proton collisions at energies up to √{ s} = 7 TeV

    NASA Astrophysics Data System (ADS)

    Ghosh, Premomoy

    2011-11-01

    Proton-proton collisions at new high energies (√{ s} = 2.36 and 7 TeV) at LHC resulted into greater mean multiplicities (< n >) of charged particles in the mid-rapidity region than estimated ones by different models and event generators. Another significant observation in multiplicity data is the change in slope in the distribution of primary charged hadrons in symmetric pseudorapidity interval | η | < 2.4. The change is most prominent with data at √{ s} = 7 TeV. These new observations merit further studies. We consider a two-component model of particle production to analyze multiplicity distributions of charged hadrons from proton-proton collisions at centre-of-mass energies √{ s} = 0.9, 2.36 and 7 TeV in symmetric pseudorapidity intervals | η | of increasing width around the centre-of-mass pseudorapidity ηcm = 0. The model, based on Quantum Statistical (QS) formalism, describes multiplicity distribution by convolution of a Negative Binomial Distribution (NBD), representing a chaotic component, and a Poisson Distribution (PD), representing a coherent component of particle productions. The behaviour of characteristic parameters of the model is followed by the LHC data, while a scaling law, involving information entropy in quantum statistical viewpoint and derived as a function of chaotic multiplicity obtained from the two-component model, is not obeyed by the data, satisfactorily. An attempt to match the measured multiplicity distributions and suggested convolutions with values of characteristic parameters extracted from the data confirms disagreement between the data and the model.

  19. Effect of variations in the doping profiles on the properties of doped multiple quantum well avalanche photodiodes

    NASA Technical Reports Server (NTRS)

    Menkara, H. M.; Wagner, B. K.; Summers, C. J.

    1996-01-01

    The purpose of this study is to use both theoretical and experimental evidence to determine the impact of doping imbalance and symmetry on the physical and electrical characteristics of doped multiple quantum well avalanche photodiodes (APD). Theoretical models have been developed to calculate the electric field valence and conduction bands, capacitance-voltage (CV), and carrier concentration versus depletion depth profiles. The models showed a strong correlation between the p- and n-doping balance inside the GaAs wells and the number of depleted stages and breakdown voltage of the APD. A periodic doping imbalance in the wells has been shown to result in a gradual increase (or decrease) in the electric field profile throughout the device which gave rise to partially depleted devices at low bias. The MQW APD structures that we modeled consisted of a 1 micron top p(+)-doped (3 x 10(exp 18) cm(exp -3)) GaAs layer followed by a 1 micron region of alternating layers of GaAs (500 A) and Al(0.42)Ga(0.58)As (500 A), and a 1 micron n(+) back layer (3 x 10(exp 18) cm(exp -3)). The GaAs wells were doped with p-i-n layers placed at the center of each well. The simulation results showed that in an APD with nine doped wells, and where the 50 A p-doped layer is off by 10% (p = 1.65 x 10(exp 18) cm(exp -3), n = 1.5 x 10(exp 18) cm(exp -3)), almost half of the MQW stages were shown to be undepleted at low bias which was a result of a reduction in the electric field near the p(+) cap layer by over 50% from its value in the balanced structure. Experimental CV and IV data on similar MBE grown MQW structures have shown very similar depletion and breakdown characteristics. The models have enabled us to better interpret our experimental data and to determine both the extent of the doping imbalances in the devices as well as the overall p- or n-type doping characteristics of the structures.

  20. Effects of multiple organic ligands on size uniformity and optical properties of ZnSe quantum dots

    SciTech Connect

    Archana, J.; Navaneethan, M.; Hayakawa, Y.; Ponnusamy, S.; Muthamizhchelvan, C.

    2012-08-15

    Highlights: ► Highly monodispersed ZnSe quantum dots have been synthesized by wet chemical route. ► Strong quantum confinement effect have been observed in ∼ 4 nm ZnSe quantum dots. ► Enhanced ultraviolet near band emission have been obtained using long chain polymer. -- Abstract: The effects of multi-ligands on the formation and optical transitions of ZnSe quantum dots have been investigated. The dots are synthesized using 3-mercapto-1,2-propanediol and polyvinylpyrrolidone ligands, and have been characterized by X-ray diffraction, transmission electron microscopy (TEM), UV–visible absorption spectroscopy, photoluminescence spectroscopy, and Fourier transform infrared spectroscopy. TEM reveals high monodispersion with an average size of 4 nm. Polymer-stabilized, organic ligand-passivated ZnSe quantum dots exhibit strong UV emission at 326 nm and strong quantum confinement in the UV–visible absorption spectrum. Uniform size and suppressed surface trap emission are observed when the polymer ligand is used. The possible growth mechanism is discussed.

  1. Theoretical analysis of multiple quantum-well, slow-light devices under applied external fields using a fully analytical model in fractional dimension

    SciTech Connect

    Kohandani, R; Kaatuzian, H

    2015-01-31

    We report a theoretical study of optical properties of AlGaAs/GaAs multiple quantum-well (MQW), slow-light devices based on excitonic population oscillations under applied external magnetic and electric fields using an analytical model for complex dielectric constant of Wannier excitons in fractional dimension. The results are shown for quantum wells (QWs) of different width. The significant characteristics of the exciton in QWs such as exciton energy and exciton oscillator strength (EOS) can be varied by application of external magnetic and electric fields. It is found that a higher bandwidth and an appropriate slow-down factor (SDF) can be achieved by changing the QW width during the fabrication process and by applying magnetic and electric fields during device functioning, respectively. It is shown that a SDF of 10{sup 5} is obtained at best. (slowing of light)

  2. Temporally and spatially resolved photoluminescence investigation of (112{sup ¯}2) semi-polar InGaN/GaN multiple quantum wells grown on nanorod templates

    SciTech Connect

    Liu, B.; Smith, R.; Athanasiou, M.; Yu, X.; Bai, J.; Wang, T.

    2014-12-29

    By means of time-resolved photoluminescence (PL) and confocal PL measurements, temporally and spatially resolved optical properties have been investigated on a number of In{sub x}Ga{sub 1−x}N/GaN multiple-quantum-well (MQW) structures with a wide range of indium content alloys from 13% to 35% on (112{sup ¯}2) semi-polar GaN with high crystal quality, obtained through overgrowth on nanorod templates. With increasing indium content, the radiative recombination lifetime initially increases as expected, but decreases if the indium content further increases to 35%, corresponding to emission in the green spectral region. The reduced radiative recombination lifetime leads to enhanced optical performance for the high indium content MQWs as a result of strong exciton localization, which is different from the behaviour of c-plane InGaN/GaN MQWs, where quantum confined Stark effect plays a dominating role in emission process.

  3. Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Liu, Wei; Zhao, Degang; Jiang, Desheng; Chen, Ping; Liu, Zongshun; Zhu, Jianjun; Yang, Jing; He, Xiaoguang; Li, Xiaojing; Li, Xiang; Liang, Feng; Liu, Jianping; Zhang, Liqun; Yang, Hui; Zhang, Yuantao; Du, Guotong

    2016-08-01

    The droop behaviors of two InGaN/GaN multiple-quantum-well blue-green light-emitting diodes grown on c-plane sapphires with different In content are investigated. The higher-In-content sample exhibits a lower efficiency, followed by a more significant droop as current increases in comparison with the lower-In-content diode. However, it is found that for both samples their efficiency reduction trend with increasing carrier density is nearly the same. Combining with the recombination rate equations, an analysis reveals that at the same injection current level, the carrier density in the higher-In-content quantum wells which have stronger polarization effect is larger due to the smaller bimolecular recombination coefficient, resulting in a more significant droop with current. Therefore, a study on the dependence of efficiency on carrier density can provide a clear elucidation to the physical mechanism of the efficiency droop behavior.

  4. Optical properties of one- and two-dimensional excitons in m-plane ZnO/MgZnO multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Chen, H. R.; Tsai, C. Y.; Huang, Y. C.; Kuo, C. C.; Hsu, H. C.; Hsieh, W. F.

    2016-03-01

    Five pairs of ZnO/Zn0.9Mg0.1O multiple quantum wells (MQWs) with fixed barrier thickness of 55 nm and three well widths of 4, 8 and 16 nm have been grown on m-plane sapphires by pulsed laser deposition. Due to 2D quantum confinement with decreasing well width, the emission of excitons bound to the basal-plane stacking faults, which are one-dimensionally confined in MQWs, encounters larger blue shift than that of the near-band edge excitons. Furthermore, remarkably reducing coupling of free excitons with A 1 longitudinal optical phonons is closely correlated with increasing exciton binding energy but enhanced coupling of E 2-low phonons is a result of increasing interaction with the interface phonons with decreasing well width.

  5. In situ atomic layer deposition half cycle study of Al2O3 growth on AlGaN

    NASA Astrophysics Data System (ADS)

    Brennan, Barry; Qin, Xiaoye; Dong, Hong; Kim, Jiyoung; Wallace, Robert M.

    2012-11-01

    The atomic layer deposition (ALD) of Al2O3 on the native oxide and hydrofluoric acid treated Al0.25Ga0.75 N surface was studied using in situ X-ray photoelectron spectroscopy (XPS), after each individual "half cycle" of the ALD process. Initially, Al2O3, Ga2O3, and N-O states were detected on both surfaces at differing concentrations. During the course of the deposition process, the N-O bonds are seen to decrease to within XPS detection limits, as well as a small decrease in the Ga2O3 concentration. The Al2O3 growth rate initially is seen to be very low, indication of low reactivity between the trimethyl-aluminum molecule and the AlGaN surface.

  6. Catalytic activity of enzymes immobilized on AlGaN /GaN solution gate field-effect transistors

    NASA Astrophysics Data System (ADS)

    Baur, B.; Howgate, J.; von Ribbeck, H.-G.; Gawlina, Y.; Bandalo, V.; Steinhoff, G.; Stutzmann, M.; Eickhoff, M.

    2006-10-01

    Enzyme-modified field-effect transistors (EnFETs) were prepared by immobilization of penicillinase on AlGaN /GaN solution gate field-effect transistors. The influence of the immobilization process on enzyme functionality was analyzed by comparing covalent immobilization and physisorption. Covalent immobilization by Schiff base formation on GaN surfaces modified with an aminopropyltriethoxysilane monolayer exhibits high reproducibility with respect to the enzyme/substrate affinity. Reductive amination of the Schiff base bonds to secondary amines significantly increases the stability of the enzyme layer. Electronic characterization of the EnFET response to penicillin G indicates that covalent immobilization leads to the formation of an enzyme (sub)monolayer.

  7. Enhanced performances of vertical-structured green-band InGaN/GaN multiple-quantum-well solar cells with aluminum reflectors

    NASA Astrophysics Data System (ADS)

    Lai, Meng-Hua; Zheng, Zhi-Wei; Yu, Jian; Ying, Lei-Ying; Zhang, Bao-Ping

    2016-06-01

    We demonstrated vertical-structured InGaN/GaN multiple-quantum-well (MQW) solar cells with enhanced performances at a wavelength of 510 nm. The enhancement was achieved by using a ptype ohmic mirror with a combined indium-tin-oxide film and an aluminum (Al) reflector inserted beneath the MQW absorption region. In addition, both good ohmic contact and high reflection were observed. The vertical-structured MQW solar cell with an Al reflector exhibited significant improvements in device performances as compared to that without the Al reflector, including a 49% increase in the short-circuit current density and a 56% increase in the power conversion efficiency.

  8. Dependence of the photovoltaic performance of pseudomorphic InGaN/GaN multiple-quantum-well solar cells on the active region thickness

    NASA Astrophysics Data System (ADS)

    Mukhtarova, Anna; Valdueza-Felip, Sirona; Redaelli, Luca; Durand, Christophe; Bougerol, Catherine; Monroy, Eva; Eymery, Joël

    2016-04-01

    We investigate the photovoltaic performance of pseudomorphic In0.1Ga0.9N/GaN multiple-quantum well (MQW) solar cells as a function of the total active region thickness. An increase in the number of wells from 5 to 40 improves the short-circuit current and the open-circuit voltage, resulting in a 10-fold enhancement of the overall conversion efficiency. Further increasing the number of wells leads to carrier collection losses due to an incomplete depletion of the active region. Capacitance-voltage measurements point to a hole diffusion length of 48 nm in the MQW region.

  9. Optical and spin properties of localized and free excitons in GaBi x As1‑x /GaAs multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Balanta, M. A. G.; Kopaczek, J.; Orsi Gordo, V.; Santos, B. H. B.; Rodrigues, A. D.; Galeti, H. V. A.; Richards, R. D.; Bastiman, F.; David, J. P. R.; Kudrawiec, R.; Galvão Gobato, Y.

    2016-09-01

    Raman spectroscopy and magneto-photoluminescence measurements under high magnetic fields were used to investigate the optical and spin properties of GaBiAs/GaAs multiple quantum wells (MQWs). An anomalous negative diamagnetic energy shift was observed at higher temperatures and higher laser intensities, which was associated to a sign inversion of hole effective mass in these structures. In addition, an enhancement of the polarization degree with decreasing of laser intensity was observed (experimental condition where the emission is dominated by localized excitons). This effect was explained by changes of spin relaxation and exciton recombination times due to exciton localization by disorder.

  10. Quantum memory Quantum memory

    NASA Astrophysics Data System (ADS)

    Le Gouët, Jean-Louis; Moiseev, Sergey

    2012-06-01

    Interaction of quantum radiation with multi-particle ensembles has sparked off intense research efforts during the past decade. Emblematic of this field is the quantum memory scheme, where a quantum state of light is mapped onto an ensemble of atoms and then recovered in its original shape. While opening new access to the basics of light-atom interaction, quantum memory also appears as a key element for information processing applications, such as linear optics quantum computation and long-distance quantum communication via quantum repeaters. Not surprisingly, it is far from trivial to practically recover a stored quantum state of light and, although impressive progress has already been accomplished, researchers are still struggling to reach this ambitious objective. This special issue provides an account of the state-of-the-art in a fast-moving research area that makes physicists, engineers and chemists work together at the forefront of their discipline, involving quantum fields and atoms in different media, magnetic resonance techniques and material science. Various strategies have been considered to store and retrieve quantum light. The explored designs belong to three main—while still overlapping—classes. In architectures derived from photon echo, information is mapped over the spectral components of inhomogeneously broadened absorption bands, such as those encountered in rare earth ion doped crystals and atomic gases in external gradient magnetic field. Protocols based on electromagnetic induced transparency also rely on resonant excitation and are ideally suited to the homogeneous absorption lines offered by laser cooled atomic clouds or ion Coulomb crystals. Finally off-resonance approaches are illustrated by Faraday and Raman processes. Coupling with an optical cavity may enhance the storage process, even for negligibly small atom number. Multiple scattering is also proposed as a way to enlarge the quantum interaction distance of light with matter. The

  11. A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers

    NASA Astrophysics Data System (ADS)

    Davies, M. J.; Hammersley, S.; Massabuau, F. C.-P.; Dawson, P.; Oliver, R. A.; Kappers, M. J.; Humphreys, C. J.

    2016-02-01

    In this paper, we report on a detailed spectroscopic study of the optical properties of InGaN/GaN multiple quantum well structures, both with and without a Si-doped InGaN prelayer. In photoluminescence and photoluminescence excitation spectroscopy, a 2nd emission band, occurring at a higher energy, was identified in the spectrum of the multiple quantum well structure containing the InGaN prelayer, originating from the first quantum well in the stack. Band structure calculations revealed that a reduction in the resultant electric field occurred in the quantum well immediately adjacent to the InGaN prelayer, therefore leading to a reduction in the strength of the quantum confined Stark effect in this quantum well. The partial suppression of the quantum confined Stark effect in this quantum well led to a modified (higher) emission energy and increased radiative recombination rate. Therefore, we ascribed the origin of the high energy emission band to recombination from the 1st quantum well in the structure. Study of the temperature dependent recombination dynamics of both samples showed that the decay time measured across the spectrum was strongly influenced by the 1st quantum well in the stack (in the sample containing the prelayer) leading to a shorter average room temperature lifetime in this sample. The room temperature internal quantum efficiency of the prelayer containing sample was found to be higher than the reference sample (36% compared to 25%) which was thus attributed to the faster radiative recombination rate of the 1st quantum well providing a recombination pathway that is more competitive with non-radiative recombination processes.

  12. Effect of thickness and carrier density on the optical polarization of Al{sub 0.44}Ga{sub 0.56}N/Al{sub 0.55}Ga{sub 0.45}N quantum well layers

    SciTech Connect

    Wierer, J. J. Montaño, I.; Crawford, M. H.; Allerman, A. A.

    2014-05-07

    The thickness and carrier density of AlGaN quantum well (QW) layers have a strong influence on the valence subband structure, and the resulting optical polarization and light extraction of ultraviolet light-emitting diodes. An ultraviolet-emitting (270–280 nm) multiple quantum well heterostructure consisting of 3 periods of Al{sub 0.44}Ga{sub 0.56}N/Al{sub 0.55}Ga{sub 0.45}N with individual layer thicknesses between 2–3.2 nm is studied both experimentally and theoretically. The optical polarization changes to preferentially polarized perpendicular to the QW plane as the QW thickness increases or the carrier density increases. Calculations show these trends are due to (a) a larger decrease in overlap of conduction band to light and heavy hole envelope functions compared to crystal-field split-off envelope functions, and (b) coupling between the valence subbands where higher heavy hole subbands couple to lower light hole and crystal-field split-off subbands. These changes in the valence band have a profound effect on the optical polarization, emission patterns, and eventual light extraction for ultraviolet emitters at these compositions and thicknesses, and need to be controlled to ensure high device efficiency.

  13. A novel usage of hydrogen treatment to improve the indium incorporation and internal quantum efficiency of green InGaN/GaN multiple quantum wells simultaneously

    NASA Astrophysics Data System (ADS)

    Ren, Peng; Zhang, Ning; Xue, Bin; Liu, Zhe; Wang, Junxi; Li, Jinmin

    2016-05-01

    The challenge for improving the internal quantum efficiency (IQE) of InGaN-based light emitting diodes (LED) in the green light range is referred to as the ‘green gap’. However the IQE of InGaN-based LEDs often drops when the emission peak wavelength is adjusted through reducing the growth temperature. Although hydrogen (H2) can improve surface morphology, it reduces the indium incorporation significantly. Here, a novel usage of H2 treatment on the GaN barrier before the InGaN quantum well is demonstrated to enhance indium incorporation efficiency and improve the IQE simultaneously for the first time. The mechanism behind it is systematically investigated and explained in detail. The possible reason for this phenomenon is the strain relieving function by the undulant GaN barrier surface after H2 treatment. Test measurements show that applying 0.2 min H2 treatment on the barrier would reduce defects and enhance indium incorporation, which would improve the localization effect and finally lead to a higher IQE. Although further increasing the treatment time to 0.4 min incorporates more indium atoms, the IQE decreases at the expense of more defects and a larger polarization field than the 0.2 min sample.

  14. GaAs/(In,Ga)As, p-channel, multiple strained quantum well field- effect transistors with high transconductance and high peak saturated drain current

    SciTech Connect

    Zipperian, T.E.; Dawson, L.R.; Drummond, T.J.; Schirber, J.E.; Fritz, I.J.

    1988-03-21

    GaAs/In/sub 0.2/ Ga/sub 0.8/ As structures with two paralleled 10 nm quantum wells, modulation doped from the top, bottom, and middle with Be, have been fabricated into multiple strained quantum well field-effect transistors (MQWFET's) with 1 x 150 ..mu..m/sup 2/ Ti/Au gates and examined both illuminated and in the dark at 300 and 77 K. Measurements on van der Pauw structures fabricated simultaneously with the transistors showed hole mobilities and sheet carrier densities to be 200, 3100, and 8040 cm/sup 2//V s, and 5.7 x 10/sup 12/, 1.8 x 10/sup 12/, and 1.5 x 10/sup 12/ cm/sup -2/ , at 300, 77, and 4 K, respectively. Shubnikov--de Haas measurements made below 4 K verified the existence of a double-channel two-dimensional hole gas with a strain-shifted light-hole ground state in the quantum wells with an effective hole mass of 0.15 m/sub e/ . A representative p-channel MQWFET showed well-saturated common-source output characteristics, both illuminated and unilluminated, at all measurement temperatures. Measured peak extrinsic transconductances and peak saturated drain currents for the unilluminated 1 ..mu..m device were 31 and 60 mS/mm and 27 and 67 mA/mm, at 300 and 77 K, respectively.

  15. Accurate molecular dynamics and nuclear quantum effects at low cost by multiple steps in real and imaginary time: Using density functional theory to accelerate wavefunction methods.

    PubMed

    Kapil, V; VandeVondele, J; Ceriotti, M

    2016-02-01

    The development and implementation of increasingly accurate methods for electronic structure calculations mean that, for many atomistic simulation problems, treating light nuclei as classical particles is now one of the most serious approximations. Even though recent developments have significantly reduced the overhead for modeling the quantum nature of the nuclei, the cost is still prohibitive when combined with advanced electronic structure methods. Here we present how multiple time step integrators can be combined with ring-polymer contraction techniques (effectively, multiple time stepping in imaginary time) to reduce virtually to zero the overhead of modelling nuclear quantum effects, while describing inter-atomic forces at high levels of electronic structure theory. This is demonstrated for a combination of MP2 and semi-local DFT applied to the Zundel cation. The approach can be seamlessly combined with other methods to reduce the computational cost of path integral calculations, such as high-order factorizations of the Boltzmann operator or generalized Langevin equation thermostats. PMID:26851912

  16. Second moment of multiple-quantum NMR and a time-dependent growth of the number of multispin correlations in solids

    SciTech Connect

    Zobov, V. E. Lundin, A. A.

    2006-12-15

    The time evolution of multispin correlations (the growth of the number of correlated spins as a function of time) can be observed directly using the multiple-quantum nuclear magnetic resonance spectroscopy of solids. A quantity related to this number, namely, the second moment of the intensity distribution of coherences of different orders in the multiple-quantum spectrum can be calculated using the theory proposed in this work. An approach to the calculation of the four-spin time correlation function through which this moment is expressed is developed. The main sequences of contributions in the expansion of this function into a time power series are summed using the approximation of a large number of neighbors both for systems with a secular dipole-dipole interaction and for systems with a nonsecular effective interaction. An exponential dependence of is obtained. The value of is additionally calculated using an expansion in terms of orthogonal operators for three model examples corresponding to different limiting realizations of spin systems. It is shown that the results of the microscopic theory at least qualitatively agree with both the results obtained for model examples and experimental results obtained recently for adamantane.

  17. The light-matter interaction of a single semiconducting AlGaN nanowire and noble metal Au nanoparticles in the sub-diffraction limit.

    PubMed

    Sivadasan, A K; Madapu, Kishore K; Dhara, Sandip

    2016-08-24

    Near field scanning optical microscopy (NSOM) is not only a tool for imaging of sub-diffraction limited objects but also a prominent characteristic tool for understanding the intrinsic properties of nanostructures. In order to understand light-matter interactions in the near field regime using a NSOM technique with an excitation of 532 nm (2.33 eV), we selected an isolated single semiconducting AlGaN nanowire (NW) of diameter ∼120 nm grown via a vapor liquid solid (VLS) mechanism along with a metallic Au nanoparticle (NP) catalyst. The role of electronic transitions from different native defect related energy states of AlGaN is discussed in understanding the NSOM images for the semiconducting NW. The effect of strong surface plasmon resonance absorption of an excitation laser on the NSOM images for Au NPs, involved in the VLS growth mechanism of NWs, is also observed. PMID:27511614

  18. Improved mobility of AlGaN channel heterojunction material using an AlGaN/GaN composite buffer layer

    NASA Astrophysics Data System (ADS)

    Wen, Hui-Juan; Zhang, Jin-Cheng; Lu, Xiao-Li; Wang, Zhi-Zhe; Ha, Wei; Ge, Sha-Sha; Cao, Rong-Tao; Hao, Yue

    2014-03-01

    The quality of an AlGaN channel heterojunction on a sapphire substrate is massively improved by using an AlGaN/GaN composite buffer layer. We demonstrate an Al0.4Ga0.5N/Al0.18Ga0.82N heterojunction with a state-of-the-art mobility of 815 cm2/(V·s) and a sheet resistance of 890 Ω/□ under room temperature. The crystalline quality and the electrical properties of the AlGaN heterojunction material are analyzed by atomic force microscopy, high-resolution X-ray diffraction, and van der Pauw Hall and capacitance—voltage (C—V) measurements. The results indicate that the improved electrical properties should derive from the reduced surface roughness and low dislocation density.

  19. Traps and defects in pre- and post-proton irradiated AlGaN-GaN high electron mobility transistors and AlGaN Schottky diodes

    NASA Astrophysics Data System (ADS)

    Sin, Yongkun; Foran, Brendan; Presser, Nathan; LaLumondiere, Stephen; Lotshaw, William; Moss, Steven C.

    2013-03-01

    High electron mobility transistors (HEMTs) based on AlGaN-GaN hetero-structures are promising for both commercial and military applications that require high voltage, high power, and high efficiency operation. Study of reliability and radiation effects of AlGaN-GaN HEMTs is necessary before solid state power amplifiers based on GaN HEMT technology are successfully deployed in satellite communication systems. Several AlGaN HEMT manufacturers have recently reported encouraging reliability data, but long-term reliability of these devices in the space environment still remains a major concern because a large number of traps and defects are present both in the bulk as well as at the surface leading to undesirable characteristics. This study is to investigate the effects of the AlGaN-GaN HEMTs and AlGaN Schottky diodes irradiated with protons.

  20. Application of the Floquet theory to multiple quantum NMR of dipolar-coupled multi-spin systems under magic angle spinning

    NASA Astrophysics Data System (ADS)

    Filip, Claudiu; Bertmer, Marko; Demco, Dan E.; Blümich, Bernhard

    A new analytical Liouville-space representation of the time-propagator under magic angle spinning (MAS) is introduced using the formalized quantum Floquet theory. This approach has the advantage that it is applicable to the analysis of any type of NMR experiment where MAS is combined with multiple-pulse excitation. General relationships describing the spectral parameters in multiple-quantum (MQ) MAS spectra are derived in this representation. Their use is illustrated with an application to double-quantum (DQ) NMR spectra of dipolarcoupled multi-spin systems. Corresponding to the separation of the MAS time-propagator into a rotor modulated and a dephasing component, two distinct mechanisms for DQ excitation are identified. One of them exploits the rotor-modulated component to excite DQ coherences through dipolar-recoupling techniques, which are familiar for spin pairs. Analytical expressions of the integral intensities and linewidths in the resulting DQ sideband pattern are derived in the form of power series expansions of the inverse rotor frequency, of which coefficients depend on structural parameters. In a multi-spin system they can most reliably be extracted in the fast spinning regime. The other mechanism exploits the dephasing component, which is characteristic to multi-spin systems only. This is shown to give rise to DQ coherences by free evolution at full rotor periods. The possibility to exploit it for selective excitation of higher order MQ coherences is discussed. In either case, the dephasing component also leads to residual broadening. The main results of the theoretical developments are demonstrated experimentally on adamantane.

  1. Nanometer-scale monitoring of quantum-confined Stark effect and emission efficiency droop in multiple GaN/AlN quantum disks in nanowires

    NASA Astrophysics Data System (ADS)

    Zagonel, L. F.; Tizei, L. H. G.; Vitiello, G. Z.; Jacopin, G.; Rigutti, L.; Tchernycheva, M.; Julien, F. H.; Songmuang, R.; Ostasevicius, T.; de la Peña, F.; Ducati, C.; Midgley, P. A.; Kociak, M.

    2016-05-01

    We report on a detailed study of the intensity dependent optical properties of individual GaN/AlN quantum disks (QDisks) embedded into GaN nanowires (NW). The structural and optical properties of the QDisks were probed by high spatial resolution cathodoluminescence (CL) in a scanning transmission electron microscope (STEM). By exciting the QDisks with a nanometric electron beam at currents spanning over three orders of magnitude, strong nonlinearities (energy shifts) in the light emission are observed. In particular, we find that the amount of energy shift depends on the emission rate and on the QDisk morphology (size, position along the NW and shell thickness). For thick QDisks (>4 nm), the QDisk emission energy is observed to blueshift with the increase of the emission intensity. This is interpreted as a consequence of the increase of carriers density excited by the incident electron beam inside the QDisks, which screens the internal electric field and thus reduces the quantum confined Stark effect (QCSE) present in these QDisks. For thinner QDisks (<3 nm ), the blueshift is almost absent in agreement with the negligible QCSE at such sizes. For QDisks of intermediate sizes there exists a current threshold above which the energy shifts, marking the transition from unscreened to partially screened QCSE. From the threshold value we estimate the lifetime in the unscreened regime. These observations suggest that, counterintuitively, electrons of high energy can behave ultimately as single electron-hole pair generators. In addition, when we increase the current from 1 to 10 pA the light emission efficiency drops by more than one order of magnitude. This reduction of the emission efficiency is a manifestation of the "efficiency droop" as observed in nitride-based 2D light emitting diodes, a phenomenon tentatively attributed to the Auger effect.

  2. Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO{sub 2} grown by atomic layer deposition

    SciTech Connect

    Ye, Gang; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Ang, Kian Siong; Wang, Hong; Liu, Zhi Hong

    2015-03-02

    The effect of post-deposition annealing on chemical bonding states at interface between Al{sub 0.5}Ga{sub 0.5}N and ZrO{sub 2} grown by atomic layer deposition (ALD) is studied by angle-resolved x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. It has been found that both of Al-O/Al 2p and Ga-O/Ga 3d area ratio decrease at annealing temperatures lower than 500 °C, which could be attributed to “clean up” effect of ALD-ZrO{sub 2} on AlGaN. Compared to Ga spectra, a much larger decrease in Al-O/Al 2p ratio at a smaller take-off angle θ is observed, which indicates higher effectiveness of the passivation of Al-O bond than Ga-O bond through “clean up” effect near the interface. However, degradation of ZrO{sub 2}/AlGaN interface quality due to re-oxidation at higher annealing temperature (>500 °C) is also found. The XPS spectra clearly reveal that Al atoms at ZrO{sub 2}/AlGaN interface are easier to get oxidized as compared with Ga atoms.

  3. Effect of surface pretreatment on interfacial chemical bonding states of atomic layer deposited ZrO{sub 2} on AlGaN

    SciTech Connect

    Ye, Gang; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Ang, Kian Siong; Wang, Hong; Liu, Zhi Hong

    2015-09-15

    Atomic layer deposition (ALD) of ZrO{sub 2} on native oxide covered (untreated) and buffered oxide etchant (BOE) treated AlGaN surface was analyzed by utilizing x-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy. Evidenced by Ga–O and Al–O chemical bonds by XPS, parasitic oxidation during deposition is largely enhanced on BOE treated AlGaN surface. Due to the high reactivity of Al atoms, more prominent oxidation of Al atoms is observed, which leads to thicker interfacial layer formed on BOE treated surface. The results suggest that native oxide on AlGaN surface may serve as a protecting layer to inhibit the surface from further parasitic oxidation during ALD. The findings provide important process guidelines for the use of ALD ZrO{sub 2} and its pre-ALD surface treatments for high-k AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors and other related device applications.

  4. New Al0.25Ga0.75N/GaN high electron mobility transistor with partial etched AlGaN layer

    NASA Astrophysics Data System (ADS)

    Yuan, Song; Duan, Baoxing; Yuan, Xiaoning; Cao, Zhen; Guo, Haijun; Yang, Yintang

    2016-05-01

    In this letter, a new Al0.25Ga0.75N/GaN high electron mobility transistor (HEMT) with the AlGaN layer is partial etched is reported for the first time. The two-dimensional electron gas (2DEG) density in the HEMTs is changed by partially etching the AlGaN layer. A new electric field peak is introduced along the interface between the AlGaN layer and the GaN buffer by the electric field modulation effect. The high electric field near the gate in the proposed Al0.25Ga0.75N/GaN HEMT is effectively decreased, which makes the surface electric field more uniform. Compared with the conventional structure, the breakdown voltage can be improved by 58% for the proposed Al0.25Ga0.75N/GaN HEMT and the current collapse can be reduced resulting from the more uniform surface electric field.

  5. Effect of V/III ratio on the growth of (11 2 bar 2) AlGaN by metalorganic vapour phase epitaxy

    NASA Astrophysics Data System (ADS)

    Dinh, Duc V.; Alam, S. N.; Parbrook, P. J.

    2016-02-01

    The effect of V/III ratio on the growth and properties of AlGaN layers grown on (112bar2) AlN templates grown on (101bar0) sapphire by metalorganic vapour phase epitaxy was studied. The surface morphology of the (112bar2) AlGaN layers and the (112bar2) AlN templates showed an undulation along [ 1 1 bar 00 ] AlGaN , AlN. The Al-content and thickness of the layers increased with decreasing V/III ratio due to a reduction in the parasitic reactions of the precursors. The Al-content of the (112bar2) layers was found to be in the range of 29.5-47.9%, which is lower than the composition of the simultaneously grown (0001) reference layers (30.4-58.0%). This was attributed to a higher density of cation (nitrogen) dangling bonds on the (112bar2) surface. Low temperature photoluminescence measurements of the (112bar2) layers showed an emission wavelength that shifts gradually from 273 nm to 306 nm with increasing V/III ratio. A decreased PL intensity of the layers with decreasing V/III ratio was attributed to an increase in cation vacancies. The Stokes-shift of the (112bar2) layers was estimated to be about 60-194 meV, and this shift increases with increasing Al-content (decreasing V/III ratio) correlated to an increased exciton localization.

  6. Charge transfer in (In,Ga)As/(In,Al)As asymmetric double-multiple-quantum-well structures

    NASA Astrophysics Data System (ADS)

    Hayduk, Michael J.; Krol, Mark F.; Pollock, Clifford R.

    1996-06-01

    We present the results of an experimental investigation of field-dependent space-charge build-up in (Ga,In)As/(Al,In)As asymmetric double quantum well structures. By using low- temperature photoluminescence spectroscopy, we have found that charge separation dramatically increases the magnitude of the applied field required to achieve resonance (and beyond) of the lowest allowed electron levels in the narrow and wide wells.

  7. Sub-250nm room temperature optical gain from AlGaN materials with strong compositional fluctuations

    NASA Astrophysics Data System (ADS)

    Pecora, Emanuele; Zhang, Wei; Sun, Haiding; Nikiforov, A.; Yin, Jian; Paiella, Roberto; Moustakas, Theodore; Dal Negro, Luca

    2013-03-01

    Compact and portable deep-UV LEDs and laser sources are needed for a number of engineering applications including optical communications, gas sensing, biochemical agent detection, disinfection, biotechnology and medical diagnostics. We investigate the deep-UV optical emission and gain properties of AlxGa1-xN/AlyGa1-yN multiple quantum wells structure. These structures were grown by molecular-beam epitaxy on 6H-SiC substrates resulting in either homogeneous wells or various degrees of band-structure compositional fluctuations in the form of cluster-like features within the wells. We measured the TE-polarized amplified spontaneous emission in the sample with cluster-like features and quantified the optical absorption/gain coefficients and gain spectra by the Variable Stripe Length (VSL) technique under ultrafast optical pumping. We report blue-shift and narrowing of the emission, VSL traces, gain spectra, polarization studies, and the validity of the Schalow-Townes relation to demonstrate a maximum net modal gain of 120 cm-1 at 250 nm in the sample with strong compositional fluctuations. Moreover, we measure a very low gain threshold (15 μJ/cm2) . On the other hand, we found that samples with homogeneous quantum wells lead to absorption only. In addition, we report gain measurements in graded-index-separate-confined heterostructure (GRINSCH) designed to increase the device optical confinement factor.

  8. Kinetics of AlGaN metal–organic vapor phase epitaxy for deep-UV applications

    NASA Astrophysics Data System (ADS)

    Lobanova, Anna; Yakovlev, Eugene; Jeschke, Joerg; Knauer, Arne; Weyers, Markus

    2016-05-01

    Al x Ga1‑ x N layers with high aluminum content of x ∼ 0.68–0.73 were grown in an 11 × 2-in. AIX 2400 G3 HT planetary reactor by metal–organic vapor phase epitaxy. Growth trends are analyzed by reaction-transport modeling in a wide range of growth conditions. Gas-phase nucleation resulting in both Al and Ga consumption into nanoparticles is a major mechanism affecting the growth efficiencies of AlN and GaN. Process windows suitable to grow multiple quantum wells (MQWs) for deep UV applications are found for a range of pressures, temperatures, and V/III ratios.

  9. Magneto-Excitons in (411)A and (100)-Oriented GaAs/AlGaAs Multiple Quantum Well Structures

    SciTech Connect

    Bajaj, K.K.; Hiyamizu, S.; Jones, E.D.; Krivorotov, I.; Shimomura, S.; Shinohara, K.

    1999-01-20

    We report magneto-exciton spectroscopy studies of (411)A and (100)-oriented GaAs/Al{sub 0.3}Ga{sub 0.7}As multiquantum well structures. The samples consisted of seven GaAs quantum wells with widths varying between 0.6 and 12nm, were grown on (411)A and (100)-oriented GaAs substrates. The exciton diamagnetic energy shifts and linewidths were measured between 0 and 14T at 1.4K The dependence of the exciton diamagnetic shifts with magnetic field were calculated using a variational approach and good agreement with experiment for both substrate orientations was found.

  10. Mixed Quantum-Classical Dynamics Methods for Strong-Field Processes: Multiple-trajectory Ehrenfest dynamics + decoherence terms

    NASA Astrophysics Data System (ADS)

    Suzuki, Yasumitsu; Watanabe, Kazuyuki; Abedi, Ali; Agostini, Federica; Min, Seung Kyu; Maitra, Neepa; Gross, E. K. U.

    The exact factorization of the electron-nuclear wave function allows to define the time-dependent potential energy surfaces (TDPESs) responsible for the nuclear dynamics and electron dynamics. Recently a novel coupled-trajectory mixed quantum-classical (CT-MQC) approach based on this TDPES has been developed, which accurately reproduces both nuclear and electron dynamics. Here we study the TDPES for laser-induced electron localization with a view to developing a MQC method for strong-field processes. We show our recent progress in applying the CT-MQC approach to the systems with many degrees of freedom.

  11. Radiative and Non-Radiative Lifetime Engineering of Quantum Dots in Multiple Solvents by Surface Atom Stoichiometry and Ligands

    PubMed Central

    Omogo, Benard; Aldana, Jose F.; Heyes, Colin D.

    2013-01-01

    CdTe quantum dots have unique characteristics that are promising for applications in photoluminescence, photovoltaics or optoelectronics. However, wide variations of the reported quantum yields exist and the influence of ligand-surface interactions that are expected to control the excited state relaxation processes remains unknown. It is important to thoroughly understand the fundamental principles underlying these relaxation processes to tailor the QDs properties to their application. Here, we systematically investigate the roles of the surface atoms, ligand functional groups and solvent on the radiative and non-radiative relaxation rates. Combining a systematic synthetic approach with X-ray photoelectron, quantitative FT-IR and time-resolved visible spectroscopies, we find that CdTe QDs can be engineered with average radiative lifetimes ranging from nanoseconds up to microseconds. The non-radiative lifetimes are anticorrelated to the radiative lifetimes, although they show much less variation. The density, nature and orientation of the ligand functional groups and the dielectric constant of the solvent play major roles in determining charge carrier trapping and excitonic relaxation pathways. These results are used to propose a coupled dependence between hole-trapping on Te atoms and strong ligand coupling, primarily via Cd atoms, that can be used to engineer both the radiative and non-radiative lifetimes. PMID:23543893

  12. Multiple exciton generation induced enhancement of the photoresponse of pulsed-laser-ablation synthesized single-wall-carbon-nanotube/PbS-quantum-dots nanohybrids.

    PubMed

    Ka, Ibrahima; Le Borgne, Vincent; Fujisawa, Kazunori; Hayashi, Takuya; Kim, Yoong Ahm; Endo, Morinobu; Ma, Dongling; El Khakani, My Ali

    2016-01-01

    The pulsed laser deposition method was used to decorate appropriately single wall carbon nanotubes (SWCNTs) with PbS quantum dots (QDs), leading to the formation of a novel class of SWCNTs/PbS-QDs nanohybrids (NHs), without resorting to any ligand engineering and/or surface functionalization. The number of laser ablation pulses (NLp) was used to control the average size of the PbS-QDs and their coverage on the SWCNTs' surface. Photoconductive (PC) devices fabricated from these SWCNTs/PbS-QDs NHs have shown a significantly enhanced photoresponse, which is found to be PbS-QD size dependent. Wavelength-resolved photocurrent measurements revealed a strong photoconductivity of the NHs in the UV-visible region, which is shown to be due to multiple exciton generation (MEG) in the PbS-QDs. For the 6.5 nm-diameter PbS-QDs (with a bandgap (Eg) = 0.86 eV), the MEG contribution of the NHs based PC devices was shown to lead to a normalized internal quantum efficiency in excess of 300% for photon energies ≥4.5Eg. While the lowest MEG threshold in our NHs based PC devices is found to be of ~2.5Eg, the MEG efficiency reaches values as high as 0.9 ± 0.1. PMID:26830452

  13. Low driving voltage in an organic light-emitting diode using MoO3/NPB multiple quantum well structure in a hole transport layer

    NASA Astrophysics Data System (ADS)

    Mu, Xue; Wu, Xiao-Ming; Hua, Yu-Lin; Jiao, Zhi-Qiang; Shen, Li-Ying; Su, Yue-Ju; Bai, Juan-Juan; Bi, Wen-Tao; Yin, Shou-Gen; Zheng, Jia-Jin

    2013-02-01

    The driving voltage of an organic light-emitting diode (OLED) is lowered by employing molybdenum trioxide (MoO3)/N, N'-bis(naphthalene-1-yl)-N,N'-bis(phe-nyl)-benzidine (NPB) multiple quantum well (MQW) structure in the hole transport layer. For the device with double quantum well (DQW) structure of ITO/ [MoO3 (2.5 nm)/NPB (20 nm)]2/Alq3(50 nm)/LiF (0.8 nm)/Al (120 nm)], the turn-on voltage is reduced to 2.8 V, which is lowered by 0.4 V compared with that of the control device (without MQW structures), and the driving voltage is 5.6 V, which is reduced by 1 V compared with that of the control device at the 1000 cd/m2. In this work, the enhancement of the injection and transport ability for holes could reduce the driving voltage for the device with MQW structure, which is attributed not only to the reduced energy barrier between ITO and NPB, but also to the forming charge transfer complex between MoO3 and NPB induced by the interfacial doping effect of MoO3.

  14. Multiple exciton generation induced enhancement of the photoresponse of pulsed-laser-ablation synthesized single-wall-carbon-nanotube/PbS-quantum-dots nanohybrids

    NASA Astrophysics Data System (ADS)

    Ka, Ibrahima; Le Borgne, Vincent; Fujisawa, Kazunori; Hayashi, Takuya; Kim, Yoong Ahm; Endo, Morinobu; Ma, Dongling; El Khakani, My Ali

    2016-02-01

    The pulsed laser deposition method was used to decorate appropriately single wall carbon nanotubes (SWCNTs) with PbS quantum dots (QDs), leading to the formation of a novel class of SWCNTs/PbS-QDs nanohybrids (NHs), without resorting to any ligand engineering and/or surface functionalization. The number of laser ablation pulses (NLp) was used to control the average size of the PbS-QDs and their coverage on the SWCNTs’ surface. Photoconductive (PC) devices fabricated from these SWCNTs/PbS-QDs NHs have shown a significantly enhanced photoresponse, which is found to be PbS-QD size dependent. Wavelength-resolved photocurrent measurements revealed a strong photoconductivity of the NHs in the UV-visible region, which is shown to be due to multiple exciton generation (MEG) in the PbS-QDs. For the 6.5 nm-diameter PbS-QDs (with a bandgap (Eg) = 0.86 eV), the MEG contribution of the NHs based PC devices was shown to lead to a normalized internal quantum efficiency in excess of 300% for photon energies ≥4.5Eg. While the lowest MEG threshold in our NHs based PC devices is found to be of ~2.5Eg, the MEG efficiency reaches values as high as 0.9 ± 0.1.

  15. InN/InGaN multiple quantum wells emitting at 1.5 {mu}m grown by molecular beam epitaxy

    SciTech Connect

    Grandal, J.; Pereiro, J.; Bengoechea-Encabo, A.; Fernandez-Garrido, S.; Sanchez-Garcia, M. A.; Munoz, E.; Calleja, E.

    2011-02-07

    This work reports on the growth by molecular beam epitaxy and characterization of InN/InGaN multiple quantum wells (MQWs) emitting at 1.5 {mu}m. X-ray diffraction (XRD) spectra show satellite peaks up to the second order. Estimated values of well (3 nm) and barrier (9 nm) thicknesses were derived from transmission electron microscopy and the fit between experimental data and simulated XRD spectra. Transmission electron microscopy and XRD simulations also confirmed that the InGaN barriers are relaxed with respect to the GaN template, while the InN MQWs grew under biaxial compression on the InGaN barriers. Low temperature (14 K) photoluminescence measurements reveal an emission from the InN MQWs at 1.5 {mu}m. Measurements as a function of temperature indicate the existence of localized states, probably due to InN quantum wells' thickness fluctuations as observed by transmission electron microscopy.

  16. Electric-field dependence of electroreflectance and photocurrent spectra at visible wavelengths in MOVPE-grown InAlGaP multiple strained quantum-well structures

    SciTech Connect

    Fritz, I.J.; Blum, O.; Schneider, R.P. Jr.; Howard, A.J.; Follstaedt, D.M.

    1993-12-31

    The authors present electric-field dependent electroreflectance and photocurrent spectra of visible-bandgap In{sub x}(Al{sub y}Ga{sub 1{minus}y}){sub 1{minus}x}P/In{sub x{prime}}(Al{sub y{prime}}Ga{sub 1{minus}y{prime}}){sub 1{minus}x{prime}}P multiple-quantum-well (MQW) structures. These structures, grown by metal-organic vapor phase epitaxy on 6{degrees}-misoriented (100) GaAs substrates, have undoped MQWs sandwiched between doped In{sub 0.5}Al{sub 0.5}P layers, forming p-i-n diodes. Quantum-well compositions in the range 0.46{le}x{le}0.52 and 0{le}y{le}0.4, corresponding to bandgaps in the red to yellow-green range, were used. The Stark shifts in these various samples were measured and found to depend on the details of the Mg p-type doping profile, confirming important diffusion effects, in agreement with secondary ion mass spectrometry and capacitance-voltage data. The results show that these new materials are promising for visible-wavelength optical modulator applications.

  17. Thin-film solar cells with InGaAs/GaAsP multiple quantum wells and a rear surface etched with light trapping micro-hole array

    NASA Astrophysics Data System (ADS)

    Watanabe, Kentaroh; Inoue, Tomoyuki; Sodabanlu, Hassanet; Sugiyama, Masakazu; Nakano, Yoshiaki

    2015-08-01

    A light trapping effect in GaAs p-i-n solar cells with InGaAs/GaAsP multiple quantum wells (MQWs) in the i-layer was demonstrated by applying a light scattering texture to the rear surface of the cell. A thin-film MQW solar cell was successfully fabricated by metal organic vapor phase epitaxy (MOVPE) to grow an inverted n-i-p photovoltaic (PV) structure; this structure was then transferred to a Si support substrate to prevent optical loss due to free carrier absorption. For the light scattering texture, the use of both the wet-etched micro-hole arrayed SiO2 dielectric layer on the rear surface of the cell and the secondarily etched micro hole array on the GaAs layer was attempted. On the SiO2 layer, the micro hole array pattern was obtained by the radio frequency sputtering of the layer followed by wet etching with photolithographic patterning. On the GaAs layer, the micro-hole array pattern was obtained by direct etching through a SiO2 template. Compared with the light scattering effects of the micro-hole-arrayed SiO2 layer, the secondarily etched GaAs rear contact layer showed a significant improvement in external quantum efficiency (EQE) in the wavelength range from 855 to 1000 nm that corresponds to the photon absorption wavelength in MQWs.

  18. Multiple exciton generation induced enhancement of the photoresponse of pulsed-laser-ablation synthesized single-wall-carbon-nanotube/PbS-quantum-dots nanohybrids

    PubMed Central

    Ka, Ibrahima; Le Borgne, Vincent; Fujisawa, Kazunori; Hayashi, Takuya; Kim, Yoong Ahm; Endo, Morinobu; Ma, Dongling; El Khakani, My Ali

    2016-01-01

    The pulsed laser deposition method was used to decorate appropriately single wall carbon nanotubes (SWCNTs) with PbS quantum dots (QDs), leading to the formation of a novel class of SWCNTs/PbS-QDs nanohybrids (NHs), without resorting to any ligand engineering and/or surface functionalization. The number of laser ablation pulses (NLp) was used to control the average size of the PbS-QDs and their coverage on the SWCNTs’ surface. Photoconductive (PC) devices fabricated from these SWCNTs/PbS-QDs NHs have shown a significantly enhanced photoresponse, which is found to be PbS-QD size dependent. Wavelength-resolved photocurrent measurements revealed a strong photoconductivity of the NHs in the UV-visible region, which is shown to be due to multiple exciton generation (MEG) in the PbS-QDs. For the 6.5 nm-diameter PbS-QDs (with a bandgap (Eg) = 0.86 eV), the MEG contribution of the NHs based PC devices was shown to lead to a normalized internal quantum efficiency in excess of 300% for photon energies ≥4.5Eg. While the lowest MEG threshold in our NHs based PC devices is found to be of ~2.5Eg, the MEG efficiency reaches values as high as 0.9 ± 0.1. PMID:26830452

  19. Spin transport in undoped InGaAs/AlGaAs multiple quantum well studied via spin photocurrent excited by circularly polarized light.

    PubMed

    Zhu, Laipan; Liu, Yu; Huang, Wei; Qin, Xudong; Li, Yuan; Wu, Qing; Chen, Yonghai

    2016-12-01

    The spin diffusion and drift at different excitation wavelengths and different temperatures have been studied in undoped InGaAs/AlGaAs multiple quantum well (MQW). The spin polarization was created by optical spin orientation using circularly polarized light, and the reciprocal spin Hall effect was employed to measure the spin polarization current. We measured the ratio of the spin diffusion coefficient to the mobility of spin-polarized carriers. From the wavelength dependence of the ratio, we found that the spin diffusion and drift of holes became as important as electrons in this undoped MQW, and the ratio for light holes was much smaller than that for heavy holes at room temperature. From the temperature dependence of the ratio, the correction factors for the common Einstein relationship for spin-polarized electrons and heavy holes were firstly obtained to be 93 and 286, respectively. PMID:26744148

  20. Enhanced Luminescence Efficiency of InGaN/GaN Multiple Quantum Wells by a Strain Relief Layer and Proper Si Doping

    NASA Astrophysics Data System (ADS)

    Tsai, Ping-Chieh; Su, Yan-Kuin; Chen, Wen-Ray; Huang, Chun-Yuan

    2010-04-01

    The effects of a strain relief layer (SRL) employed in the InGaN/GaN light-emitting diodes (LEDs) was demonstrated. The wavelength shift was reduced to as small as 2.5 nm by inserting a SRL between n-GaN and InGaN/GaN multiple quantum wells (MQWs). For the improvement of optical properties, a proper Si-doped layer was simultaneously added in the last several barriers of In0.08Ga0.92N/GaN SRL. It can be found that the output power was increased more than 25% as the Si doping level was increased up to 5 times in the last three barriers of SRL at an injection current of 20 mA. Furthermore, the forward voltages at 20 mA were almost the same for all LEDs with different doping levels and positions.

  1. Decay of multispin multiple-quantum coherent states in the NMR of a solid and the stabilization of their intensity profile with time

    SciTech Connect

    Zobov, V. E.; Lundin, A. A.

    2011-12-15

    Variations, experimentally observed in [14], in the intensity profiles of multiple-quantum (MQ) coherences in the presence of two special types of perturbations are explained on the basis of the theory, earlier developed by the authors, of the growth of the effective size of correlated clusters (the number of correlated spins) and the relaxation of MQ coherent states [23]. The intensity and the character of perturbation were controlled by the experimenters. It is shown that the observed stabilization of profiles with time is not associated with the stabilization of the cluster size. Quite the contrary, a cluster of correlated spins monotonically grows, while the observed variations in the intensity profile and its stabilization with time are attributed to the dependence of the decay rate of an MQ coherence on its order (its position in the MQ spectrum). The results of the theory are in good agreement with the experimental data.

  2. Hole injection from the sidewall of V-shaped pits into c-plane multiple quantum wells in InGaN light emitting diodes

    SciTech Connect

    Wu, Xiaoming; Liu, Junlin Jiang, Fengyi

    2015-10-28

    The role which the V-shaped pits (V-pits) play in InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs) has been proposed to enable the formation of sidewall MQWs, whose higher bandgap than that of the c-plane MQWs is considered to act as an energy barrier to prevent carriers from reaching the dislocations. Here, with increasing proportion of current flowing via the V-pits, the emission of the c-plane MQWs broadens across the short-wavelength band and shows a blueshift successively. This phenomenon is attributed to hole injection from the sidewall of V-pits into the c-plane MQWs, which is a new discovery in the injection mechanism of InGaN/GaN MQW LEDs.

  3. Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes

    PubMed Central

    Jeong, Hyun; Jeong, Hyeon Jun; Oh, Hye Min; Hong, Chang-Hee; Suh, Eun-Kyung; Lerondel, Gilles; Jeong, Mun Seok

    2015-01-01

    Carrier localization phenomena in indium-rich InGaN/GaN multiple quantum wells (MQWs) grown on sapphire and GaN substrates were investigated. Temperature-dependent photoluminescence (PL) spectroscopy, ultraviolet near-field scanning optical microscopy (NSOM), and confocal time-resolved PL (TRPL) spectroscopy were employed to verify the correlation between carrier localization and crystal quality. From the spatially resolved PL measurements, we observed that the distribution and shape of luminescent clusters, which were known as an outcome of the carrier localization, are strongly affected by the crystalline quality. Spectroscopic analysis of the NSOM signal shows that carrier localization of MQWs with low crystalline quality is different from that of MQWs with high crystalline quality. This interrelation between carrier localization and crystal quality is well supported by confocal TRPL results. PMID:25792246

  4. Very simple combination of TROSY, CRINEPT and multiple quantum coherence for signal enhancement in an HN(CO)CA experiment for large proteins

    NASA Astrophysics Data System (ADS)

    Bayrhuber, Monika; Riek, Roland

    2011-04-01

    Sensitivity enhancement in liquid state nuclear magnetic resonance (NMR) triple resonance experiments for the sequential assignment of proteins is important for the investigation of large proteins or protein complexes. We present here the 3D TROSY-MQ/CRINEPT-HN(CO)CA which makes use of a 15N- 1H-TROSY element and a 13C'- 13CA CRINEPT step combined with a multiple quantum coherence during the 13CA evolution period. Because of the introduction of these relaxation-optimized elements and 10 less pulses required, when compared with the conventional TROSY-HN(CO)CA experiment an average signal enhancement of a factor of 1.8 was observed for the membrane protein-detergent complex KcsA with a rotational correlation time τ c of around 60 ns.

  5. Exciton localization in polar and semipolar (112̅2) In0.2Ga0.8N/GaN multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Dinh, Duc V.; Presa, Silvino; Maaskant, Pleun P.; Corbett, Brian; Parbrook, Peter J.

    2016-08-01

    The exciton localization (ELZ) in polar (0001) and semipolar (112̅2) In{}0.2Ga{}0.8{{N}} multiple-quantum-well (MQW) structures has been studied by excitation power density and temperature dependent photoluminescence. The ELZ in the (112̅2) MQW was found to be much stronger (ELZ degree σ E ∼ 40 –70 meV) compared to the (0001) MQW (σ E ∼ 5‑11 meV) that was attributed to the anisotropic growth on the (112̅2) surface. This strong ELZ was found to cause a blue-shift of the (112̅2) MQW exciton emission with rising temperature from 200 to 340 K, irrespective of excitation source used. A lower luminescence efficiency of the (112̅2) MQW was attributed to their anisotropic growth, and higher concentrations of unintentional impurities and point defects than the (0001) MQW.

  6. Spin depolarization under low electric fields at low temperatures in undoped InGaAs/AlGaAs multiple quantum well

    SciTech Connect

    Zhu, Laipan; Liu, Yu; Jiang, Chongyun; Yu, Jinling; Gao, Hansong; Ma, Hui; Qin, Xudong; Li, Yuan; Wu, Qing; Chen, Yonghai

    2014-10-13

    The spin polarization under low electric fields (≤300 V/cm) at low temperatures has been studied in undoped InGaAs/AlGaAs multiple quantum well. The spin polarization was created by optical spin orientation using circularly polarized light and the inverse spin-Hall effect was employed to measure the spin polarization current. We observed an obvious spin depolarization especially at lower temperatures (80–120 K). We ascribed the spin depolarization of the photoinduced electrons to the heating effect from the low electric fields (the low field regime 50–300 V/cm). This spin depolarization due to the heating effect is sensitive to temperature and electric field, suggesting a wide range of potential applications and devices.

  7. Long wavelength superluminal pulse propagation in a defect slab doped with GaAs/AlGaAs multiple quantum well nanostructure

    NASA Astrophysics Data System (ADS)

    Panahi, M.; Solookinejad, G.; Sangachin, E. Ahmadi; Asadpour, S. H.

    2015-12-01

    In this paper, long wavelength superluminal and subluminal properties of pulse propagation in a defect slab medium doped with four-level GaAs/AlGaAs multiple quantum wells (MQWs) with 15 periods of 17.5 nm GaAs wells and 15 nm Al0.3Ga0.7As barriers is theoretically discussed. It is shown that exciton spin relaxation (ESR) between excitonic states in MQWs can be used for controlling the superluminal and subluminal light transmissions and reflections at different wavelengths. We also show that reflection and transmission coefficients depend on the thickness of the slab for the resonance and nonresonance conditions. Moreover, we found that the ESR for nonresonance condition lead to superluminal light transmission and subluminal light reflection.

  8. Improved blue electroluminescence in InGaN/GaN multiple-quantum well light-emitting diodes with an electron blocking layer

    NASA Astrophysics Data System (ADS)

    Nam, Giwoong; Yoon, Hyunsik; Kim, Min Su; Lee, Jewon; Leem, Jae-Young; Kim, Byunggu; Ji, Iksoo; Lee, Dong-Yul; Lee, Chang-Lyoul; Kim, Jin Soo; Kim, Jong Su

    2013-04-01

    InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with p-AlGaN electron blocking layers (EBLs) were grown by using metal-organic chemical vapor deposition. The effects of the EBL thickness on the electrical properties and the luminescent efficiency of the LEDs were investigated by using capacitance-voltage (C-V) measurements, current-voltage ( I — V) measurements, electroluminescence (EL), and time-resolved photoluminescence (TR-PL). The EL efficiency of the LEDs increased with increasing thickness of the p-AlGaN EBL. In addition, the EL efficiency of the LEDs also increased with increasing injection current. The carrier lifetime of the LEDs increased with increasing thickness of the p-AlGaN EBL.

  9. Vacancies in InxGa1-xN/GaN multiple quantum wells fabricated on m-plane GaN probed by a monoenergetic positron beam

    NASA Astrophysics Data System (ADS)

    Uedono, Akira; Kurihara, Kaori; Yoshihara, Nakaaki; Nagao, Satoshi; Ishibashi, Shoji

    2015-05-01

    Vacancy-type defects in InxGa1-xN/GaN multiple-quantum-well (MQW) structures fabricated on m-plane GaN by metal-organic chemical vapor deposition have been studied using a monoenergetic positron beam. Through measurements of Doppler broadening spectra of the annihilation radiation, the vacancy-type defects in MQW structures were probed. The positron trapping rate of defects decreased under photon illumination, which is attributed to the emission of electrons from those defects and/or the suppression of the positron diffusion by optically active defects. The energy level of the defects was close to the energy of photoluminescence emissions. The relationship between the energy width of the photoluminescence line and the defects is discussed.

  10. Shockley-Read-Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Liu, Wei; Zhao, Degang; Jiang, Desheng; Chen, Ping; Liu, Zongshun; Zhu, Jianjun; Li, Xiang; Liang, Feng; Liu, Jianping; Zhang, Liqun; Yang, Hui; Zhang, Yuantao; Du, Guotong

    2016-04-01

    The influence of Shockley-Read-Hall (SRH) non-radiative recombination on efficiency droop is investigated for two similar InGaN/GaN multiple-quantum-well green light-emitting diodes (LEDs) with quite different luminescence efficiency. The high-efficiency diode exhibits a pronounced efficiency peak followed by a significant droop as injection current increases, while the low-efficiency sample shows a relatively small droop. Combining with the recombination rate equations, our analysis reveals that, in comparison with the high-efficiency sample, in the low-efficiency diode the injected carrier density in InGaN well layers is decreased at high currents due to the strong SRH process, leading to an apparently reduced droop. This may be a possible physical mechanism responsible for the linkage between the low efficiency and the small efficiency droop.

  11. Efficient charge-carrier extraction from Ag2S quantum dots prepared by the SILAR method for utilization of multiple exciton generation

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaoliang; Liu, Jianhua; Johansson, Erik M. J.

    2015-01-01

    The utilization of electron-hole pairs (EHPs) generated from multiple excitons in quantum dots (QDs) is of great interest toward efficient photovoltaic devices and other optoelectronic devices; however, extraction of charge carriers remains difficult. Herein, we extract photocharges from Ag2S QDs and investigate the dependence of the electric field on the extraction of charges from multiple exciton generation (MEG). Low toxic Ag2S QDs are directly grown on TiO2 mesoporous substrates by employing the successive ionic layer adsorption and reaction (SILAR) method. The contact between QDs is important for the initial charge separation after MEG and for the carrier transport, and the space between neighbor QDs decreases with more SILAR cycles, resulting in better charge extraction. At the optimal electric field for extraction of photocharges, the results suggest that the threshold energy (hνth) for MEG is 2.41Eg. The results reveal that Ag2S QD is a promising material for efficient extraction of charges from MEG and that QDs prepared by SILAR have an advantageous electrical contact facilitating charge separation and extraction.The utilization of electron-hole pairs (EHPs) generated from multiple excitons in quantum dots (QDs) is of great interest toward efficient photovoltaic devices and other optoelectronic devices; however, extraction of charge carriers remains difficult. Herein, we extract photocharges from Ag2S QDs and investigate the dependence of the electric field on the extraction of charges from multiple exciton generation (MEG). Low toxic Ag2S QDs are directly grown on TiO2 mesoporous substrates by employing the successive ionic layer adsorption and reaction (SILAR) method. The contact between QDs is important for the initial charge separation after MEG and for the carrier transport, and the space between neighbor QDs decreases with more SILAR cycles, resulting in better charge extraction. At the optimal electric field for extraction of photocharges, the

  12. Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlattices.

    PubMed

    Zheng, T C; Lin, W; Liu, R; Cai, D J; Li, J C; Li, S P; Kang, J Y

    2016-01-01

    A novel multidimensional Mg-doped superlattice (SL) is proposed to enhance vertical hole conductivity in conventional Mg-doped AlGaN SL which generally suffers from large potential barrier for holes. Electronic structure calculations within the first-principle theoretical framework indicate that the densities of states (DOS) of the valence band nearby the Fermi level are more delocalized along the c-axis than that in conventional SL, and the potential barrier significantly decreases. Hole concentration is greatly enhanced in the barrier of multidimensional SL. Detailed comparisons of partial charges and decomposed DOS reveal that the improvement of vertical conductance may be ascribed to the stronger pz hybridization between Mg and N. Based on the theoretical analysis, highly conductive p-type multidimensional Al0.63Ga0.37N/Al0.51Ga0.49N SLs are grown with identified steps via metalorganic vapor-phase epitaxy. The hole concentration reaches up to 3.5 × 10(18) cm(-3), while the corresponding resistivity reduces to 0.7 Ω cm at room temperature, which is tens times improvement in conductivity compared with that of conventional SLs. High hole concentration can be maintained even at 100 K. High p-type conductivity in Al-rich structural material is an important step for the future design of superior AlGaN-based deep ultraviolet devices. PMID:26906334

  13. Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlattices

    NASA Astrophysics Data System (ADS)

    Zheng, T. C.; Lin, W.; Liu, R.; Cai, D. J.; Li, J. C.; Li, S. P.; Kang, J. Y.

    2016-02-01

    A novel multidimensional Mg-doped superlattice (SL) is proposed to enhance vertical hole conductivity in conventional Mg-doped AlGaN SL which generally suffers from large potential barrier for holes. Electronic structure calculations within the first-principle theoretical framework indicate that the densities of states (DOS) of the valence band nearby the Fermi level are more delocalized along the c-axis than that in conventional SL, and the potential barrier significantly decreases. Hole concentration is greatly enhanced in the barrier of multidimensional SL. Detailed comparisons of partial charges and decomposed DOS reveal that the improvement of vertical conductance may be ascribed to the stronger pz hybridization between Mg and N. Based on the theoretical analysis, highly conductive p-type multidimensional Al0.63Ga0.37N/Al0.51Ga0.49N SLs are grown with identified steps via metalorganic vapor-phase epitaxy. The hole concentration reaches up to 3.5 × 1018 cm-3, while the corresponding resistivity reduces to 0.7 Ω cm at room temperature, which is tens times improvement in conductivity compared with that of conventional SLs. High hole concentration can be maintained even at 100 K. High p-type conductivity in Al-rich structural material is an important step for the future design of superior AlGaN-based deep ultraviolet devices.

  14. High growth rate of AlGaN for buffer structures for GaN on Si to increase throughput

    NASA Astrophysics Data System (ADS)

    Matsumoto, Koh; Ubukata, Akinori; Ikenaga, Kazutada; Naito, Kazuki; Yamamoto, Jun; Yano, Yoshiki; Tabuchi, Toshiya; Yamaguchi, Akira; Ban, Yuzaburo; Uchiyama, Kosuke

    2012-03-01

    Throughput requirement of the epitaxial process of GaN on Si is described. The impact of the growth rate of AlGaN for the buffer layer of GaN on Si is highlighted. In the attempt of growing GaN on Si, we have tested a production scale high flow speed MOVPE reactor (TAIYO NIPPON SANSO UR25k) for 6 inch X 7 wafers. Al0.58Ga0.42N was grown with the growth rate of 1.85μm/hr at 30 kPa. AlN was grown with the growth rate of 1.4μm/hr at 13kPa. AlN/GaN SLS (5nm/20nm) was also grown at the growth rate of 1.4μm/hr. An excellent uniformity of aluminum concentration of less than 0.5% was also obtained for Al0.58Ga0.42N. The challenge which we are facing to further increase of the throughput is summarized.

  15. Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlattices

    PubMed Central

    Zheng, T. C.; Lin, W.; Liu, R.; Cai, D. J.; Li, J. C.; Li, S. P.; Kang, J. Y.

    2016-01-01

    A novel multidimensional Mg-doped superlattice (SL) is proposed to enhance vertical hole conductivity in conventional Mg-doped AlGaN SL which generally suffers from large potential barrier for holes. Electronic structure calculations within the first-principle theoretical framework indicate that the densities of states (DOS) of the valence band nearby the Fermi level are more delocalized along the c-axis than that in conventional SL, and the potential barrier significantly decreases. Hole concentration is greatly enhanced in the barrier of multidimensional SL. Detailed comparisons of partial charges and decomposed DOS reveal that the improvement of vertical conductance may be ascribed to the stronger pz hybridization between Mg and N. Based on the theoretical analysis, highly conductive p-type multidimensional Al0.63Ga0.37N/Al0.51Ga0.49N SLs are grown with identified steps via metalorganic vapor-phase epitaxy. The hole concentration reaches up to 3.5 × 1018 cm−3, while the corresponding resistivity reduces to 0.7 Ω cm at room temperature, which is tens times improvement in conductivity compared with that of conventional SLs. High hole concentration can be maintained even at 100 K. High p-type conductivity in Al-rich structural material is an important step for the future design of superior AlGaN-based deep ultraviolet devices. PMID:26906334

  16. Atmospheric observations of multiple molecular species using ultra-high-resolution external cavity quantum cascade laser heterodyne radiometry.

    PubMed

    Weidmann, Damien; Tsai, Tracy; Macleod, Neil A; Wysocki, Gerard

    2011-06-01

    We demonstrate a widely tunable laser heterodyne radiometer operating in the thermal IR during an atmospheric observation campaign in the solar occultation viewing mode. An external cavity quantum cascade laser tunable within a range of 1120 to 1238 cm(-1) is used as the local oscillator (LO) of the instrument. Ultra-high-resolution (60 MHz or 0.002 cm(-1) transmission spectroscopy of several atmospheric species (water vapor, ozone, nitrous oxide, methane, and dichlorodifluoromethane) has been demonstrated within four precisely selected molecule-specific narrow spectral windows (∼1 cm(-1). Atmospheric transmission lines within each selected window were fully resolved through mode-hop-free continuous tuning of the LO frequency. Comparison measurements were made simultaneously with a high-resolution Fourier transform spectrometer to demonstrate the advantages of the laser heterodyne system for atmospheric sounding at high spectral and spatial resolutions. PMID:21633412

  17. Temperature dependence of mid-infrared intersubband absorption in AlGaN/GaN multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Kotani, Teruhisa; Arita, Munetaka; Hoshino, Katsuyuki; Arakawa, Yasuhiko

    2016-02-01

    The temperature dependence of the mid-infrared intersubband (ISB) absorption in non-polar (m-plane) and polar (c-plane) AlGaN/GaN quantum wells (QWs) is studied. The ISB absorption shifts to higher energy as the temperature is reduced from 300 K to below 10 K. Both m-plane and c-plane QWs show a small energy shift (1.6-2.6 meV) compared to AlGaAs/GaAs (3.5-5.2 meV) and AlSb/InAs (6.2 and 12 meV) QWs. Theoretical calculations considering the temperature induced material constant changes show good agreement with the experimental results. These results suggest that ISB transition energies in AlGaN/GaN QWs are more stable against temperature change mainly because of the heavy effective masses and small nonparabolicities.

  18. InGaN/GaN Multiple Quantum Well Light-Emitting Diodes grown on Polar, Semi-polar and Non-Polar Orientations

    NASA Astrophysics Data System (ADS)

    Mukund, Aadhithya Hosalli

    Cost effective solid-state lighting (SSL) is gaining much attention in recent years. As a result, there has been a great demand for high efficiency light emitting diodes (LEDs). InGaN/GaN multiple quantum well (MQW) based light-emitting diodes (LEDs) emitting in the blue/green region have emerged as promising candidates in realizing the next-generation SSL technology. InGaN/GaN quantum well structures for optoelectronic devices are conventionally grown on the c-plane (polar plane) which has a large polarization field. This large field within the quantum well structures results in a low rate of radiative recombination. This polarization issue is also partly responsible for the "green gap" or the poor external quantum efficiency observed for LEDs emitting in the green region of the visible spectrum and beyond. The alternative to this polarization issue is to grow on semi-polar orientations with a reduced field relative to the c-plane or on non-polar orientations which has zero polarization field. In this dissertation, alternative approaches to grow on semi-polar and nonpolar orientations are explored. The first of these approaches explores the possibility of growing on the facets of GaN nanowires that are oriented along desirable orientations from the perspective of polarization. A "proof of concept" LED structure, that has embedded voids, is overgrown on GaN nanowires. Three times improvement in the light-output power is observed for the LED overgrown on GaN nanowires relative to the conventional c-plane LED. The higher light-output power is attributed primarily to reduced piezo-electric fields and improved light extraction as a result of wave-guiding by the embedded voids. The second of these approaches explores the growth of MQW LEDs on semi-polar and non-polar bulk GaN substrates. A modified growth approach is used for incorporating higher amounts of indium to enable green-emitting MQWs. The challenges with these bulk GaN substrates and the effect of varying

  19. Hydrogen Generation using non-polar coaxial InGaN/GaN Multiple Quantum Well Structure Formed on Hollow n-GaN Nanowires.

    PubMed

    Park, Ji-Hyeon; Mandal, Arjun; Kang, San; Chatterjee, Uddipta; Kim, Jin Soo; Park, Byung-Guon; Kim, Moon-Deock; Jeong, Kwang-Un; Lee, Cheul-Ro

    2016-01-01

    This article demonstrates for the first time to the best of our knowledge, the merits of InGaN/GaN multiple quantum wells (MQWs) grown on hollow n-GaN nanowires (NWs) as a plausible alternative for stable photoelectrochemical water splitting and efficient hydrogen generation. These hollow nanowires are achieved by a growth method rather not by conventional etching process. Therefore this approach becomes simplistic yet most effective. We believe relatively low Ga flux during the selective area growth (SAG) aids the hollow nanowire to grow. To compare the optoelectronic properties, simultaneously solid nanowires are also studied. In this present communication, we exhibit that lower thermal conductivity of hollow n-GaN NWs affects the material quality of InGaN/GaN MQWs by limiting In diffusion. As a result of this improvement in material quality and structural properties, photocurrent and photosensitivity are enhanced compared to the structures grown on solid n-GaN NWs. An incident photon-to-current efficiency (IPCE) of around ~33.3% is recorded at 365 nm wavelength for hollow NWs. We believe that multiple reflections of incident light inside the hollow n-GaN NWs assists in producing a larger amount of electron hole pairs in the active region. As a result the rate of hydrogen generation is also increased. PMID:27556534

  20. Hydrogen Generation using non-polar coaxial InGaN/GaN Multiple Quantum Well Structure Formed on Hollow n-GaN Nanowires

    PubMed Central

    Park, Ji-Hyeon; Mandal, Arjun; Kang, San; Chatterjee, Uddipta; Kim, Jin Soo; Park, Byung-Guon; Kim, Moon-Deock; Jeong, Kwang-Un; Lee, Cheul-Ro

    2016-01-01

    This article demonstrates for the first time to the best of our knowledge, the merits of InGaN/GaN multiple quantum wells (MQWs) grown on hollow n-GaN nanowires (NWs) as a plausible alternative for stable photoelectrochemical water splitting and efficient hydrogen generation. These hollow nanowires are achieved by a growth method rather not by conventional etching process. Therefore this approach becomes simplistic yet most effective. We believe relatively low Ga flux during the selective area growth (SAG) aids the hollow nanowire to grow. To compare the optoelectronic properties, simultaneously solid nanowires are also studied. In this present communication, we exhibit that lower thermal conductivity of hollow n-GaN NWs affects the material quality of InGaN/GaN MQWs by limiting In diffusion. As a result of this improvement in material quality and structural properties, photocurrent and photosensitivity are enhanced compared to the structures grown on solid n-GaN NWs. An incident photon-to-current efficiency (IPCE) of around ~33.3% is recorded at 365 nm wavelength for hollow NWs. We believe that multiple reflections of incident light inside the hollow n-GaN NWs assists in producing a larger amount of electron hole pairs in the active region. As a result the rate of hydrogen generation is also increased. PMID:27556534

  1. Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Oliveira, F.; Fischer, I. A.; Benedetti, A.; Zaumseil, P.; Cerqueira, M. F.; Vasilevskiy, M. I.; Stefanov, S.; Chiussi, S.; Schulze, J.

    2015-12-01

    We report on the fabrication and structural characterization of epitaxially grown ultra-thin layers of Sn on Ge virtual substrates (Si buffer layer overgrown by a 50 nm thick Ge epilayer followed by an annealing step). Samples with 1 to 5 monolayers of Sn on Ge virtual substrates were grown using solid source molecular beam epitaxy and characterized by atomic force microscopy. We determined the critical thickness at which the transition from two-dimensional to three-dimensional growth occurs. This transition is due to the large lattice mismatch between Ge and Sn (≈14.7%). By depositing Ge on top of Sn layers, which have thicknesses at or just below the critical thickness, we were able to fabricate ultra-narrow GeSn multi-quantum-well structures that are fully embedded in Ge. We report results on samples with one and ten GeSn wells separated by 5 and 10 nm thick Ge spacer layers that were characterized by high resolution transmission electron microscopy and X-ray diffraction. We discuss the structure and material intermixing observed in the samples.

  2. Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy

    SciTech Connect

    Oliveira, F.; Fischer, I. A.; Schulze, J.; Benedetti, A.; Zaumseil, P.; Cerqueira, M. F.; Vasilevskiy, M. I.; Stefanov, S.; Chiussi, S.

    2015-12-28

    We report on the fabrication and structural characterization of epitaxially grown ultra-thin layers of Sn on Ge virtual substrates (Si buffer layer overgrown by a 50 nm thick Ge epilayer followed by an annealing step). Samples with 1 to 5 monolayers of Sn on Ge virtual substrates were grown using solid source molecular beam epitaxy and characterized by atomic force microscopy. We determined the critical thickness at which the transition from two-dimensional to three-dimensional growth occurs. This transition is due to the large lattice mismatch between Ge and Sn (≈14.7%). By depositing Ge on top of Sn layers, which have thicknesses at or just below the critical thickness, we were able to fabricate ultra-narrow GeSn multi-quantum-well structures that are fully embedded in Ge. We report results on samples with one and ten GeSn wells separated by 5 and 10 nm thick Ge spacer layers that were characterized by high resolution transmission electron microscopy and X-ray diffraction. We discuss the structure and material intermixing observed in the samples.

  3. Breaking the carbon dimer: The challenges of multiple bond dissociation with full configuration interaction quantum Monte Carlo methods

    NASA Astrophysics Data System (ADS)

    Booth, George H.; Cleland, Deidre; Thom, Alex J. W.; Alavi, Ali

    2011-08-01

    The full configuration interaction quantum Monte Carlo (FCIQMC) method, as well as its "initiator" extension (i-FCIQMC), is used to tackle the complex electronic structure of the carbon dimer across the entire dissociation reaction coordinate, as a prototypical example of a strongly correlated molecular system. Various basis sets of increasing size up to the large cc-pVQZ are used, spanning a fully accessible N-electron basis of over 1012 Slater determinants, and the accuracy of the method is demonstrated in each basis set. Convergence to the FCI limit is achieved in the largest basis with only O[10^7] walkers within random errorbars of a few tenths of a millihartree across the binding curve, and extensive comparisons to FCI, CCSD(T), MRCI, and CEEIS results are made where possible. A detailed exposition of the convergence properties of the FCIQMC methods is provided, considering convergence with elapsed imaginary time, number of walkers and size of the basis. Various symmetries which can be incorporated into the stochastic dynamic, beyond the standard abelian point group symmetry and spin polarisation are also described. These can have significant benefit to the computational effort of the calculations, as well as the ability to converge to various excited states. The results presented demonstrate a new benchmark accuracy in basis-set energies for systems of this size, significantly improving on previous state of the art estimates.

  4. Large TE polarized optical gain from AlInN-delta-GaN quantum well for ultraviolet lasers

    NASA Astrophysics Data System (ADS)

    Liu, Cheng; Ooi, Yu Kee; Zhang, Jing

    2016-03-01

    Ultraviolet (UV) lasers with wavelength (λ) < 300 nm have important applications in free-space communication, water/air purification, and biochemical agent detection. Conventionally, AlGaN quantum wells (QWs) are widely used as active region for UV lasers. However, high-efficiency electrically injected mid-UV lasers with λ ~ 250-300 nm are still very challenging as the corresponding AlGaN QWs suffer from severe band-mixing effect due to the presence of the valence sub-band crossover between the heavy-hole (HH) and crystal-field split off (CH) sub-bands, which would result in very low optical gain in such wavelength regime. Therefore, in this work, we propose and investigate the use of AlInN material system as an alternative for mid-UV lasers. Nanostructure engineering by the use of AlInN-delta-GaN QW has been performed to enable dominant conduction band - HH sub-band transition as well as optimized electron-hole wave function overlap. The insertion of the ultra-thin delta-GaN layer, which is lattice-matched to Al0.82In0.18N layer, would localize the wave functions strongly toward the center of the active region, leading to large transverse electric (TE) polarized optical gain (gTE) for λ~ 250- 300 nm. From our finding, the use of AlInN-delta-GaN QW resulted in ~ 3-times enhancement in TE-polarized optical gain, in comparison to that of conventional AlGaN QW, for gain media emitting at ~ 255 nm. The peak emission wavelength can be tuned by varying the delta layer thickness while maintaining large TE gain. Specifically, gTE ~ 3700 cm-1 was obtained for λ ~ 280-300 nm, which are very challenging for conventional AlGaN QW active region.

  5. Determination of the valence band offset of MOVPE-grown In0.48Ga0.52P/GaAs multiple quantum wells by admittance spectroscopy

    NASA Astrophysics Data System (ADS)

    Ghezzi, Carlo; Magnanini, Renato; Parisini, Antonella; Tarricone, Luciano; Gombia, Enos; Longo, Massimo

    2008-03-01

    The valence band discontinuity of the lattice matched In0.48Ga0.52P/GaAs heterostructure was determined through a careful analysis of the temperature and frequency dependence of the admittance of p+/MQW/n+ structures, formed by a nominally undoped InGaP/GaAs multiple quantum well region, interposed between p+ and n+ GaAs layers. The heterostructures were grown through metal organic vapor phase epitaxy by using tertiary butyl arsine and tertiary butyl phosphine as alternative precursors for the V-group elements. The growth conditions were optimized for obtaining sharp interfaces and negligible ordering effects in the cation sublattice. Accounting for the temperature dependence of the Fermi energy and the calculated confining energy (10meV) of the heavy holes in the wells, a valence band offset ΔEV=(356±5)meV was derived from the temperature variation of the resonance frequency at which the isothermal conductance over frequency G(ω)/ω curves show a maximum. The experimental uncertainty of this result is significantly low if compared with the wide range (240-400meV) of the previously reported ΔEV values. By considering the band gap difference between InGaP and GaAs, a conduction band offset ΔEC=119meV was estimated. The accuracy of the experimental procedure and the reliability of the main assumptions of the admittance spectroscopy measurements were accurately checked. The obtained results were discussed in light of the large and growing amount of literature data by taking into account the influence of the growth conditions on the physical properties of the InGaP/GaAs quantum wells.

  6. Photoreflectance and Phototransmittance of Narrow Well Strained Layer InxGa1-xAs/GaAs Coupled Multiple Quantum Well Structures

    NASA Astrophysics Data System (ADS)

    Pan, S. H.; Shen, H.; Hang, Z.; Pollak, F. H.; Zhuang, Weihua; Xu, Qian; Roth, A. P.; Masut, R. A.; Lacelle, C.; Morris, D.

    1988-08-01

    We have measured the photoreflectance (PR) spectra at 300K and 77K of two strained layer <001> InxGall-xAs/GaAs (x≍0.12) multiple quantum wells (MQW) with nominal well (Lz) and barrier (LB) widths of 50A/100A and 30A/100A, respectively, as deduced from the growth conditions. Phototransmittance at 77K of the latter sample has been studied. In both samples we have observed a number of features in the PR spectra corresponding to miniband dispersion (coupling between wells) of both confined and unconfined (above the GaAs barrier) transitions. The coupling between wells leads to different transition energies at the mini-Brillouin zone center (Γ) and edge (π) along the growth direction. This is the first observation of unconfined features and miniband dispersion in this system. Even though our samples have fairly wide barriers (LB ≍100A) the coupling between wells is an important effect because of the relatively small confinement energies for x≍0.12. Using the envelope function approach we have calculated the various transition energies taking into account both strain and quantum well effects, including miniband disper-sion. Good agreement with experiment is found for a heavy-hole valence band discontinuity of 0.3±0.05 and LZ/LB = 52±3A/105±5A(x=0.11±0.01) and 32±3A/95±5A(x=0.12±0.01) for the two samples, respectively. The In composition and well/barrier widths are thus in good agreement with the growth conditions. Although the symmetric component of the fundamental light-hole to conduction band transition is a strong feature, the small observed amplitude of the antisymmetric component for both samples is evidence for the type II nature of the light-hole to conduction band transitions.

  7. Optical properties of CdTe- Cd0.90Mn0.10Te multiple quantum well structures grown by pulsed laser evaporation and epitaxy

    NASA Astrophysics Data System (ADS)

    Dubowski, J. J.; Roth, A. P.; Deleporte, E.; Peter, G.; Feng, Z. C.; Perkowitz, S.

    1992-02-01

    Low-temperature photoluminescence, photoluminescence excitation and Raman spectroscopy measurements of CdTeCd 0.90Mn 0.10Te multiple quantum well (MQW) structures grown by pulsed laser evaporation and epitaxy (PLEE) on (001) Cd 1- xZn xTe substrates are carried out. The samples are grown from fluxes of Cd-Te and Cd-Mn-Te provided by ablation of solid CdTe and Cd 0.93Mn 0.07Te targets with Nd:YAG and excimer XeCl lasers, respectively. The excitonic lines corresponding to the quantum well E 1-HH 1 transition are investigated. Comparison between the observed PL excitonic emissions and calculated energy levels using a Kronig-Penney model with the well width as a fitting parameter allowed us to determine the "optical" well widths of the samples and to compare them with those determined from secondary ion mass spectroscopy in-depth profiles. Raman spectra for non-resonance excitation at 501.7 nm are dominated by the CdTe-like longitudinal optical (LO) modes at 166 cm -1 and MnTe-like LO modes at 194 cm -1 from the Cd 0.90Mn 0.10Te barriers. Under resonance conditions, with excitation at 476.5 nm the CdTe LO, 2LO and 3LO modes from the wells near 170,340 and 510 cm -1 dominate the spectra. The results clearly indicate that the PLEE-grown MQWs have the characteristics of the best currently available material.

  8. Site-resolved multiple-quantum filtered correlations and distance measurements by magic-angle spinning NMR: Theory and applications to spins with weak to vanishing quadrupolar couplings.

    PubMed

    Eliav, U; Haimovich, A; Goldbourt, A

    2016-01-14

    We discuss and analyze four magic-angle spinning solid-state NMR methods that can be used to measure internuclear distances and to obtain correlation spectra between a spin I = 1/2 and a half-integer spin S > 1/2 having a small quadrupolar coupling constant. Three of the methods are based on the heteronuclear multiple-quantum and single-quantum correlation experiments, that is, high rank tensors that involve the half spin and the quadrupolar spin are generated. Here, both zero and single-quantum coherence of the half spins are allowed and various coherence orders of the quadrupolar spin are generated, and filtered, via active recoupling of the dipolar interaction. As a result of generating coherence orders larger than one, the spectral resolution for the quadrupolar nucleus increases linearly with the coherence order. Since the formation of high rank tensors is independent of the existence of a finite quadrupolar interaction, these experiments are also suitable to materials in which there is high symmetry around the quadrupolar spin. A fourth experiment is based on the initial quadrupolar-driven excitation of symmetric high order coherences (up to p = 2S, where S is the spin number) and subsequently generating by the heteronuclear dipolar interaction higher rank (l + 1 or higher) tensors that involve also the half spins. Due to the nature of this technique, it also provides information on the relative orientations of the quadrupolar and dipolar interaction tensors. For the ideal case in which the pulses are sufficiently strong with respect to other interactions, we derive analytical expressions for all experiments as well as for the transferred echo double resonance experiment involving a quadrupolar spin. We show by comparison of the fitting of simulations and the analytical expressions to experimental data that the analytical expressions are sufficiently accurate to provide experimental (7)Li-(13)C distances in a complex of lithium, glycine, and water. Discussion

  9. Variations in the Quantum Efficiency of Multiple Exciton Generation for a Series of Chemically Treated PbSe Nanocrystal Films

    SciTech Connect

    Beard, M. C.; Midgett, A. G.; Law, M.; Semonin, O. E.; Ellingson, R. J.; Nozik, A. J.

    2009-01-01

    We study multiple exciton generation (MEG) in two series of chemically treated PbSe nanocrystal (NC) films. We find that the average number of excitons produced per absorbed photon varies between 1.0 and 2.4 ({+-} 0.2) at a photon energy of {approx}4E{sub g} for films consisting of 3.7 nm NCs and between 1.1 and 1.6 ({+-} 0.1) at hv {approx}5E{sub g} for films consisting of 7.4 nm NCs. The variations in MEG depend upon the chemical treatment used to electronically couple the NCs in each film. The single and multiexciton lifetimes also change with the chemical treatment: biexciton lifetimes increase with stronger inter-NC electronic coupling and exciton delocalization, while single exciton lifetimes decrease after most treatments relative to the same NCs in solution. Single exciton lifetimes are particularly affected by surface treatments that dope the films n-type, which we tentatively attribute to an Auger recombination process between a single exciton and an electron produced by ionization of the dopant donor. These results imply that a better understanding of the effects of surface chemistry on film doping, NC carrier dynamics, and inter-NC interactions is necessary to build solar energy conversion devices that can harvest the multiple carriers produced by MEG. Our results show that the MEG efficiency is very sensitive to the condition of the NC surface and suggest that the wide range of MEG efficiencies reported in the recent literature may be a result of uncontrolled differences in NC surface chemistry.

  10. Variations in the quantum efficiency of multiple exciton generation for a series of chemically treated PbSe nanocrystal films.

    PubMed

    Beard, Matthew C; Midgett, Aaron G; Law, Matt; Semonin, Octavi E; Ellingson, Randy J; Nozik, Arthur J

    2009-02-01

    We study multiple exciton generation (MEG) in two series of chemically treated PbSe nanocrystal (NC) films. We find that the average number of excitons produced per absorbed photon varies between 1.0 and 2.4 (+/-0.2) at a photon energy of approximately 4E(g) for films consisting of 3.7 nm NCs and between 1.1 and 1.6 (+/-0.1) at hnu approximately 5E(g) for films consisting of 7.4 nm NCs. The variations in MEG depend upon the chemical treatment used to electronically couple the NCs in each film. The single and multiexciton lifetimes also change with the chemical treatment: biexciton lifetimes increase with stronger inter-NC electronic coupling and exciton delocalization, while single exciton lifetimes decrease after most treatments relative to the same NCs in solution. Single exciton lifetimes are particularly affected by surface treatments that dope the films n-type, which we tentatively attribute to an Auger recombination process between a single exciton and an electron produced by ionization of the dopant donor. These results imply that a better understanding of the effects of surface chemistry on film doping, NC carrier dynamics, and inter-NC interactions is necessary to build solar energy conversion devices that can harvest the multiple carriers produced by MEG. Our results show that the MEG efficiency is very sensitive to the condition of the NC surface and suggest that the wide range of MEG efficiencies reported in the recent literature may be a result of uncontrolled differences in NC surface chemistry. PMID:19170560

  11. Comparison study of photoluminescence from InGaN/GaN multiple quantum wells and InGaN epitaxial layers under large hydrostatic pressure

    SciTech Connect

    Shan, W.; Perlin, P.; Ager, J.W. III; Walukiewicz, W.; Haller, E.E.; McCluskey, M.D.; Johnson, N.M.; Bour, D.P.

    1998-09-01

    We report the results of a comparison study of photoluminescence (PL) from an In{sub 0.15}Ga{sub 0.85}N/GaN multiple-quantum-well (MQW) sample and an In{sub 0.11}Ga{sub 0.89}N thick epitaxial-layer sample, which have very similar band-gap energies. Large hydrostatic pressures were used for our investigations. The PL emissions in both samples were found to shift linearly to higher energy with applied pressure. In the MQW sample, the pressure response of the InGaN is dominated by the GaN layers, which leads to a significantly weaker pressure dependence as compared to the epilayer sample. Our results yield a pressure coefficient of 2.8{times}10{sup {minus}3}thinspeV/kbar for the In{sub 0.15}Ga{sub 0.85}N/GaN MQW sample and 4.0{times}10{sup {minus}3}thinspeV/kbar for the In{sub 0.11}Ga{sub 0.89}N epilayer. An abrupt decrease of PL intensity in both samples was observed at pressures above 100 kbar, indicating the carriers involved in the radiative recombination processes in the samples originate primarily from the adjacent GaN layers. {copyright} {ital 1998 American Institute of Physics.}

  12. Molecular weight distributions of irradiated siloxane-based elastomers: A complementary study by statistical modeling and multiple quantum nuclear magnetic resonance

    SciTech Connect

    Dinh, L. N.; Mayer, B. P.; Maiti, A.; Chinn, S. C.; Maxwell, R. S.

    2011-05-01

    The statistical methodology of population balance (PB) has been applied in order to predict the effects of cross-linking and chain-scissioning induced by ionizing radiation on the distribution of molecular weight between cross-links (MWBC) of a siloxane-based elastomer. Effective molecular weight distributions were extracted from the quantification of residual dipolar couplings via multiple quantum nuclear magnetic resonance (MQ-NMR) measurements and are taken to reflect actual MWBC distributions. The PB methodology is then applied to the unirradiated MWBC distribution and considers both chain-scissioning and the possibility of the formation of three types of cross-links: random recombination of scissioned-chain ends (end-linking), random covalent bonds of free radicals on scissioned-chain ends (Y-cross-linking), and the formation of random cross-links from free radicals on side groups (H-cross-linking). The qualitative agreement between the statistical modeling approach and the NMR data confirms that it is possible to predict trends for the evolution of the distribution of MWBC of polymers under irradiation. The approach described herein can also discern heterogeneities in radiation effects in different structural motifs in the polymer network.

  13. Measurements and simulations of the optical gain and anti-reflection coating modal reflectivity in quantum cascade lasers with multiple active region stacks

    NASA Astrophysics Data System (ADS)

    Bidaux, Y.; Terazzi, R.; Bismuto, A.; Gresch, T.; Blaser, S.; Muller, A.; Faist, J.

    2015-09-01

    We report spectrally resolved gain measurements and simulations for quantum cascade lasers (QCLs) composed of multiple heterogeneous stacks designed for broadband emission in the mid-infrared. The measurement method is first demonstrated on a reference single active region QCL based on a double-phonon resonance design emitting at 7.8 μm. It is then extended to a three-stack active region based on bound-to-continuum designs with a broadband emission range from 7.5 to 10.5 μm. A tight agreement is found with simulations based on a density matrix model. The latter implements exhaustive microscopic scattering and dephasing sources with virtually no fitting parameters. The quantitative agreement is furthermore assessed by measuring gain coefficients obtained by studying the threshold current dependence with the cavity length. These results are particularly relevant to understand fundamental gain mechanisms in complex semiconductor heterostructure QCLs and to move towards efficient gain engineering. Finally, the method is extended to the measurement of the modal reflectivity of an anti-reflection coating deposited on the front facet of the broadband QCL.

  14. Exciton–phonon interaction in Al0.4Ga0.6N/Al0.53Ga0.47N multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Liu, Ya-Li; Jin, Peng; Liu, Gui-Peng; Wang, Wei-Ying; Qi, Zhi-Qiang; Chen, Chang-Qing; Wang, Zhan-Guo

    2016-08-01

    The exciton–phonon interaction in Al0.4Ga0.6N/Al0.53Ga0.47N multiple quantum wells (MQWs) is studied by deep-ultraviolet time-integrated and time-resolved photoluminescence (PL). Up to four longitudinal-optical (LO) phonon replicas of exciton recombination are observed, indicating the strong coupling of excitons with LO phonons in the MQWs. Moreover, the exciton–phonon coupling strength in the MQWs is quantified by the Huang–Rhys factor, and it keeps almost constant in a temperature range from 10 K to 120 K. This result can be explained in terms of effects of fluctuations in the well thickness in the MQWs and the temperature on the exciton–phonon interaction. Project supported by the National Basic Research Program of China (Grant No. 2012CB619306), the Beijing Science and Technology Project, China (Grant No. Z151100003315024), and the National Natural Science Foundation of China (Grant No. 61404132).

  15. Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Li, X.; Zhao, D. G.; Yang, J.; Jiang, D. S.; Liu, Z. S.; Chen, P.; Zhu, J. J.; Liu, W.; He, X. G.; Li, X. J.; Liang, F.; Zhang, L. Q.; Liu, J. P.; Yang, H.; Zhang, Y. T.; Du, G. T.

    2016-09-01

    The localization effect is studied in blue-violet light emitting InGaN/GaN multiple quantum wells (MQWs) with varying InGaN growth rate. The temperature-dependent photoluminescence (PL) measurement shows that for higher-growth-rate samples two emission peaks appear in their PL spectra. Further analysis reveals that two different localization luminescence states (i.e., deep and shallow localization states) exist in the InGaN QWs with higher QW growth rate, and the competition of radiative recombination between the two localization states determines the relative intensity of the two emission peaks. It is also found that, as InGaN growth rate reduces, the deep localization state depth is almost unchanged while the shallow localization state weakens. When the QW growth rate reduces to a certain value, the shallow localization state disappears and only a single main peak induced by deep localization state appears in the PL spectra. Finally, it is noted that an intermediate InGaN growth rate results in a better light emission efficiency of the MQW.

  16. Net electron-phonon scattering rates in InN/GaN multiple quantum wells: The effects of an energy dependent acoustic deformation potential

    SciTech Connect

    Xia, H. Patterson, R.; Feng, Y.; Shrestha, S.; Conibeer, G.

    2014-08-11

    The rates of charge carrier relaxation by phonon emission are of substantial importance in the field of hot carrier solar cell, primarily in investigation of mechanisms to slow down hot carrier cooling. In this work, energy and momentum resolved deformation potentials relevant to electron-phonon scattering are computed for wurtzite InN and GaN as well as an InN/GaN multiple quantum well (MQW) superlattice using ab-initio methods. These deformation potentials reveal important features such as discontinuities across the electronic bandgap of the materials and variations over tens of eV. The energy dependence of the deformation potential is found to be very similar for wurtzite nitrides despite differences between the In and Ga pseudopotentials and their corresponding electronic band structures. Charge carrier relaxation by this mechanism is expected to be minimal for electrons within a few eV of the conduction band edge. However, hole scattering at energies more accessible to excitation by solar radiation is possible between heavy and light hole states. Moderate reductions in overall scattering rates are observed in MQW relative to the bulk nitride materials.

  17. Suppression of metastable-phase inclusion in N-polar (0001{sup ¯}) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy

    SciTech Connect

    Shojiki, Kanako Iwabuchi, Takuya; Kuboya, Shigeyuki; Choi, Jung-Hun; Tanikawa, Tomoyuki; Hanada, Takashi; Katayama, Ryuji; Matsuoka, Takashi; Usami, Noritaka

    2015-06-01

    The metastable zincblende (ZB) phase in N-polar (0001{sup ¯}) (−c-plane) InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic vapor phase epitaxy is elucidated by the electron backscatter diffraction measurements. From the comparison between the −c-plane and Ga-polar (0001) (+c-plane), the −c-plane MQWs were found to be suffered from the severe ZB-phase inclusion, while ZB-inclusion is negligible in the +c-plane MQWs grown under the same growth conditions. The ZB-phase inclusion is a hurdle for fabricating the −c-plane light-emitting diodes because the islands with a triangular shape appeared on a surface in the ZB-phase domains. To improve the purity of stable wurtzite (WZ)-phase, the optimum conditions were investigated. The ZB-phase is dramatically eliminated with decreasing the V/III ratio and increasing the growth temperature. To obtain much-higher-quality MQWs, the thinner InGaN wells and the hydrogen introduction during GaN barriers growth were tried. Consequently, MQWs with almost pure WZ phase and with atomically smooth surface have been demonstrated.

  18. Measurements and simulations of the optical gain and anti-reflection coating modal reflectivity in quantum cascade lasers with multiple active region stacks

    SciTech Connect

    Bidaux, Y.; Terazzi, R.; Bismuto, A.; Gresch, T.; Blaser, S.; Muller, A.; Faist, J.

    2015-09-07

    We report spectrally resolved gain measurements and simulations for quantum cascade lasers (QCLs) composed of multiple heterogeneous stacks designed for broadband emission in the mid-infrared. The measurement method is first demonstrated on a reference single active region QCL based on a double-phonon resonance design emitting at 7.8 μm. It is then extended to a three-stack active region based on bound-to-continuum designs with a broadband emission range from 7.5 to 10.5 μm. A tight agreement is found with simulations based on a density matrix model. The latter implements exhaustive microscopic scattering and dephasing sources with virtually no fitting parameters. The quantitative agreement is furthermore assessed by measuring gain coefficients obtained by studying the threshold current dependence with the cavity length. These results are particularly relevant to understand fundamental gain mechanisms in complex semiconductor heterostructure QCLs and to move towards efficient gain engineering. Finally, the method is extended to the measurement of the modal reflectivity of an anti-reflection coating deposited on the front facet of the broadband QCL.

  19. Size effect on negative capacitance at forward bias in InGaN/GaN multiple quantum well-based blue LED

    NASA Astrophysics Data System (ADS)

    Bourim, El-Mostafa; Han, Jeong In

    2016-01-01

    Size effect of InGaN/GaN multiple quantum well (MQW) blue light emitting diodes (LEDs), on electrical characteristics in forward bias voltage at high injection current in light emission regime, is observed to induce a substantial dispersion in the current density and normalized negative capacitance (NC) (i.e., capacitance per chip area). The correction of normalized NC by considering the LED p- n junction series resistance has been found to be independent of chip area size with lateral dimensions ranging from 100 µm × 100 µm to 400 µm × 400 µm. This fact, confirms that the inductive effect which is usually behind the NC apparition is homogeneously and uniformly distributed across the entire device area and hence the dispersive characteristics are not related to local paths. From the characteristics of NC dependence on temperature, frequency and direct current bias, a mechanism based on the electrons/holes charge carriers conductivity difference is proposed to be responsible for the transient electron-hole pair recombination process inducing NC phenomenon. Direct measurement of light emission brightness under modulated frequency demonstrated that modulated light output evolution follows the same behavioral tendency as measured in NC under alternating current signal modulation. Thus it is concluded that the NC is valuable information which would be of practical interest in improving the characteristics and parameters relevant to LED p- n junction internal structure. [Figure not available: see fulltext.

  20. Effect of localization states on the electroluminescence spectral width of blue–green light emitting InGaN/GaN multiple quantum wells

    SciTech Connect

    Liu, Wei; Zhao, De Gang Jiang, De Sheng; Chen, Ping; Liu, Zong Shun; Zhu, Jian Jun; Li, Xiang; Shi, Ming; Zhao, Dan Mei; Liu, Jian Ping; Zhang, Shu Ming; Wang, Hui; Yang, Hui

    2015-11-15

    The electroluminescence (EL) spectra of blue–green light emitting InGaN/GaN multiple quantum well (MQW) structures grown via metal-organic chemical vapor deposition are investigated. With increasing In content in InGaN well layers, the peak energy redshifts, the emission intensity reduces and the inhomogeneous broadening of the luminescence band increases. In addition, it is found that the EL spectra shrink with increasing injection current at low excitation condition, which may be ascribed to both Coulomb screening of polarization field and carrier transferring from shallower localization states to the deeper ones, while at high currents the state-filling effect in all localization states may become significant and lead to a broadening of EL spectra. However, surprisingly, for the MQW sample with much higher In content, the EL spectral bandwidth can be almost unchanged with increasing current at the high current range, since a large number of carriers may be captured by the nonradiative recombination centers distributed outside the localized potential traps and the state-filling effect in the localization states is suppressed.