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Sample records for algan quantum wells

  1. Deep-ultraviolet polychromatic emission from three-dimensionally structured AlGaN quantum wells

    NASA Astrophysics Data System (ADS)

    Kataoka, Ken; Funato, Mitsuru; Kawakami, Yoichi

    2017-03-01

    Three-dimensional (3D) AlGaN/AlN quantum wells (QWs) were fabricated on trench-patterned AlN templates using a regrowth technique based on metalorganic vapor phase epitaxy. The 3D structures are composed of planar (0001) facets, \\{ 1\\bar{1}01\\} facets, and misoriented (0001) planes with bunched steps. Cathodoluminescence spectroscopy revealed double-peaked deep-ultraviolet (DUV) emissions: the shorter-wavelength emission was attributed to the (0001) facets, whereas the longer-wavelength emission arose from bunched step structures located around the bottom corner of the AlN trench, a region in which the AlGaN QWs possessed a relatively high Ga concentration and a thick well width compared with planar (0001) QWs.

  2. Enhanced photoluminescence efficiency in AlGaN quantum wells with gradient-composition AlGaN barriers

    NASA Astrophysics Data System (ADS)

    Shevchenko, E. A.; Nechaev, D. V.; Jmerik, V. N.; Kaibyshev, V. Kh; Ivanov, S. V.; Toropov, A. A.

    2016-08-01

    We present photoluminescence studies of AIxGa1-xN/AlyGa1-yN (y = x+0.3) quantum well (QW) heterostructures with graded AI content in barrier layers, emitting in the range 285-315 nm. The best-established internal quantum efficiency of the QW emission is as high as 81% at 300 K, owing to enhanced activation energy of charge carriers and exciton binding energy in the QW heterostructure with optimized design.

  3. Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes

    SciTech Connect

    Mehnke, Frank Kuhn, Christian; Guttmann, Martin; Reich, Christoph; Kolbe, Tim; Rass, Jens; Wernicke, Tim; Kueller, Viola; Knauer, Arne; Lapeyrade, Mickael; Einfeldt, Sven; Weyers, Markus; Kneissl, Michael

    2014-08-04

    The design and Mg-doping profile of AlN/Al{sub 0.7}Ga{sub 0.3}N electron blocking heterostructures (EBH) for AlGaN multiple quantum well (MQW) light emitting diodes (LEDs) emitting below 250 nm was investigated. By inserting an AlN electron blocking layer (EBL) into the EBH, we were able to increase the quantum well emission power and significantly reduce long wavelength parasitic luminescence. Furthermore, electron leakage was suppressed by optimizing the thickness of the AlN EBL while still maintaining sufficient hole injection. Ultraviolet (UV)-C LEDs with very low parasitic luminescence (7% of total emission power) and external quantum efficiencies of 0.19% at 246 nm have been realized. This concept was applied to AlGaN MQW LEDs emitting between 235 nm and 263 nm with external quantum efficiencies ranging from 0.002% to 0.93%. After processing, we were able to demonstrate an UV-C LED emitting at 234 nm with 14.5 μW integrated optical output power and an external quantum efficiency of 0.012% at 18.2 A/cm{sup 2}.

  4. Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells

    SciTech Connect

    Li, Xiaohang E-mail: dupuis@gatech.edu; Xie, Hongen; Ponce, Fernando A.; Ryou, Jae-Hyun; Detchprohm, Theeradetch; Dupuis, Russell D. E-mail: dupuis@gatech.edu

    2015-12-14

    We demonstrated onset of deep-ultraviolet (DUV) surface stimulated emission (SE) from c-plane AlGaN multiple-quantum well (MQW) heterostructures grown on a sapphire substrate by optical pumping at room temperature. The onset of SE became observable at a pumping power density of 630 kW/cm{sup 2}. Spectral deconvolution revealed superposition of a linearly amplified spontaneous emission peak at λ ∼ 257.0 nm with a full width at half maximum (FWHM) of ∼12 nm and a superlinearly amplified SE peak at λ ∼ 260 nm with a narrow FWHM of less than 2 nm. In particular, the wavelength of ∼260 nm is the shortest wavelength of surface SE from III-nitride MQW heterostructures to date. Atomic force microscopy and scanning transmission electron microscopy measurements were employed to investigate the material and structural quality of the AlGaN heterostructures, showing smooth surface and sharp layer interfaces. This study offers promising results for AlGaN heterostructures grown on sapphire substrates for the development of DUV vertical cavity surface emitting lasers (VCSELs)

  5. Coulomb correlation effects and density dependence of radiative recombination rates in polar AlGaN quantum wells

    NASA Astrophysics Data System (ADS)

    Rupper, Greg; Rudin, Sergey; Bertazzi, Francesco; Garrett, Gregory; Wraback, Michael

    2013-03-01

    AlGaN narrow quantum wells are important elements of deep-ultraviolet light emitting devices. The electron-hole radiative recombination rates are important characteristics of these nanostructures. In this work we evaluated their dependence on carrier density and lattice temperature and compared our theoretical results with the experimentally determined radiative lifetimes in the c-plane grown AlGaN quantum wells. The bands were determined in the k .p approximation for a strained c-plane wurtzite quantum well and polarization fields were included in the model. In order to account for Coulomb correlations at relatively high densities of photo-excited electron-hole plasma and arbitrary temperature, we employed real-time Green's function formalism with self-energies evaluated in the self-consistent T-matrix approximation. The luminescence spectrum was obtained from the susceptibility by summing over scattering in-plane directions and polarization states. The recombination coefficient was obtained from the integrated photo-luminescence. The density dependence of the radiative recombination rate shows effects of strong screening of the polarization electric field at high photo-excitation density.

  6. Improved characteristics of ultraviolet AlGaN multiple-quantum-well laser diodes with step-graded quantum barriers close to waveguide layers

    NASA Astrophysics Data System (ADS)

    Cai, Xuefen; Li, Shuping; Kang, Junyong

    2016-09-01

    Ultraviolet AlGaN multiple-quantum-well laser diodes (LDs) with step-graded quantum barriers (QBs) instead of conventional first and last QBs close to waveguide layers are proposed. The characteristics of this type of laser diodes are numerically investigated by using the software PICS3D and it is found that the performances of these LDs are greatly improved. The results indicates that the structure with step-graded QBs exhibits higher output light power, slope efficiency and emission intensity, as well as lower series resistance and threshold current density under the identical condition, compared with conventional LD structure.

  7. High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

    SciTech Connect

    Bryan, Zachary Bryan, Isaac; Sitar, Zlatko; Collazo, Ramón; Xie, Jinqiao; Mita, Seiji

    2015-04-06

    The internal quantum efficiency (IQE) of Al{sub 0.55}Ga{sub 0.45}N/AlN and Al{sub 0.55}Ga{sub 0.45}N/Al{sub 0.85}Ga{sub 0.15}N UVC MQW structures was analyzed. The use of bulk AlN substrates enabled us to undoubtedly distinguish the effect of growth conditions, such as V/III ratio, on the optical quality of AlGaN based MQWs from the influence of dislocations. At a high V/III ratio, a record high IQE of ∼80% at a carrier density of 10{sup 18 }cm{sup −3} was achieved at ∼258 nm. The high IQE was correlated with the decrease of the non-radiative coefficient A and a reduction of midgap defect luminescence, all suggesting that, in addition to dislocations, point defects are another major factor that strongly influences optical quality of AlGaN MQW structures.

  8. On the increased efficiency in InGaN-based multiple quantum wells emitting at 530-590 nm with AlGaN interlayers

    NASA Astrophysics Data System (ADS)

    Koleske, D. D.; Fischer, A. J.; Bryant, B. N.; Kotula, P. G.; Wierer, J. J.

    2015-04-01

    InGaN/AlGaN/GaN-based multiple quantum wells (MQWs) with AlGaN interlayers (ILs) are investigated, specifically to examine the fundamental mechanisms behind their increased radiative efficiency at wavelengths of 530-590 nm. The AlzGa1-zN (z~0.38) IL is ~1-2 nm thick, and is grown after and at the same growth temperature as the ~3 nm thick InGaN quantum well (QW). This is followed by an increase in temperature for the growth of a ~10 nm thick GaN barrier layer. The insertion of the AlGaN IL within the MQW provides various benefits. First, the AlGaN IL allows for growth of the InxGa1-xN QW well below typical growth temperatures to achieve higher x (up to~0.25). Second, annealing the IL capped QW prior to the GaN barrier growth improves the AlGaN IL smoothness as determined by atomic force microscopy, improves the InGaN/AlGaN/GaN interface quality as determined from scanning transmission electron microscope images and x-ray diffraction, and increases the radiative efficiency by reducing non-radiative defects as determined by time-resolved photoluminescence measurements. Finally, the AlGaN IL increases the spontaneous and piezoelectric polarization induced electric fields acting on the InGaN QW, providing an additional red-shift to the emission wavelength as determined by Schrodinger-Poisson modeling and fitting to the experimental data. The relative impact of increased indium concentration and polarization fields on the radiative efficiency of MQWs with AlGaN ILs is explored along with implications to conventional longer wavelength emitters.

  9. Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes

    SciTech Connect

    Reich, Christoph Guttmann, Martin; Wernicke, Tim; Mehnke, Frank; Kuhn, Christian; Feneberg, Martin; Goldhahn, Rüdiger; Rass, Jens; Kneissl, Michael; Lapeyrade, Mickael; Einfeldt, Sven; Knauer, Arne; Kueller, Viola; Weyers, Markus

    2015-10-05

    The optical polarization of emission from ultraviolet (UV) light emitting diodes (LEDs) based on (0001)-oriented Al{sub x}Ga{sub 1−x}N multiple quantum wells (MQWs) has been studied by simulations and electroluminescence measurements. With increasing aluminum mole fraction in the quantum well x, the in-plane intensity of transverse-electric (TE) polarized light decreases relative to that of the transverse-magnetic polarized light, attributed to a reordering of the valence bands in Al{sub x}Ga{sub 1−x}N. Using k ⋅ p theoretical model calculations, the AlGaN MQW active region design has been optimized, yielding increased TE polarization and thus higher extraction efficiency for bottom-emitting LEDs in the deep UV spectral range. Using (i) narrow quantum wells, (ii) barriers with high aluminum mole fractions, and (iii) compressive growth on patterned aluminum nitride sapphire templates, strongly TE-polarized emission was observed at wavelengths as short as 239 nm.

  10. Performance improvement of AlGaN-based deep-ultraviolet light-emitting diodes via asymmetric step-like AlGaN quantum wells

    NASA Astrophysics Data System (ADS)

    Lu, Lin; Wan, Zhi; Xu, FuJun; Wang, XinQiang; Lv, Chen; Shen, Bo; Jiang, Ming; Chen, QiGong

    2017-04-01

    Characteristics of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) with light-emitting wavelength around 265 nm via step-like AlGaN quantum wells (QWs) have been investigated. Simulation approach yields a result that, there is significant enhancement of light output power (LOP) for DUV-LEDs with two-layer step-like AlGaN QWs compared to that with conventional one. The location and thickness of AlGaN layer with higher Al-content in the step-like QWs are confirmed to significantly affect the distributions and overlap of electron and hole wavefunctions. The best material characteristic is obtained when the step-like QW is designed as an asymmetric structure, such as Al0.74Ga0.26N (1.8 nm)/Al0.64Ga0.36N (1.2 nm), where AlGaN with higher Al-content layer is set to be located nearer from n-side and be thick as far as possible. The key factors for the performance improvements for this specific design is the enhanced hole transport and mitigated auger recombination.

  11. Optical polarization control of photo-pumped stimulated emissions at 238 nm from AlGaN multiple-quantum-well laser structures on AlN substrates

    NASA Astrophysics Data System (ADS)

    Lachab, Mohamed; Sun, WenHong; Jain, Rakesh; Dobrinsky, Alex; Gaevski, Mikhail; Rumyantsev, Sergey; Shur, Michael; Shatalov, Max

    2017-01-01

    We demonstrate the capability to control the optical polarization of room-temperature stimulated emissions (SEs) at 238-239 nm from optically pumped AlGaN multiple-quantum-well (MQW) heterostructures on bulk AlN. The results of structural and optical characterizations provided evidence that altering the strain state in the pseudomorphically grown MQW laser structures enabled the switching of the polarization direction of the SE from predominantly transverse electric (TE) at 238 nm to predominantly transverse magnetic (TM) at 239 nm. The SE observed at 238 nm represents the shortest peak wavelength with TE polarization yet reported for AlGaN materials grown on any type of substrate.

  12. Statistical nanoscale study of localised radiative transitions in GaN/AlGaN quantum wells and AlGaN epitaxial layers

    NASA Astrophysics Data System (ADS)

    Rigutti, L.; Mancini, L.; Lefebvre, W.; Houard, J.; Hernàndez-Maldonado, D.; Di Russo, E.; Giraud, E.; Butté, R.; Carlin, J.-F.; Grandjean, N.; Blavette, D.; Vurpillot, F.

    2016-09-01

    Compositional disorder has important consequences on the optical properties of III-nitride ternary alloys. In AlGaN epilayers and AlGaN-based quantum heterostructures, the potential fluctuations induced by such disorder lead to the localisation of carriers at low temperature, which affects their transition energies. Using the correlations between micro-photoluminescence, scanning transmission electron microscopy and atom probe tomography we have analysed the optical behaviour of Al0.25Ga0.75N epilayers and that of GaN/AlGaN quantum wells, and reconstructed in three dimensions the distribution of chemical species with sub-nanometre spatial resolution. These composition maps served as the basis for the effective mass calculation of electrons and holes involved in radiative transitions. Good statistical predictions were subsequently obtained for the above-mentioned transition and localisation energies by establishing a link with their microstructural properties.

  13. Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate

    SciTech Connect

    Li, Xiao-Hang E-mail: dupuis@gatech.edu; Kao, Tsung-Ting; Satter, Md. Mahbub; Shen, Shyh-Chiang; Yoder, P. Douglas; Detchprohm, Theeradetch; Dupuis, Russell D. E-mail: dupuis@gatech.edu; Wei, Yong O.; Wang, Shuo; Xie, Hongen; Fischer, Alec M.; Ponce, Fernando A.

    2015-01-26

    We demonstrate transverse-magnetic (TM) dominant deep-ultraviolet (DUV) stimulated emission from photo-pumped AlGaN multiple-quantum-well lasers grown pseudomorphically on an AlN/sapphire template by means of photoluminescence at room temperature. The TM-dominant stimulated emission was observed at wavelengths of 239, 242, and 243 nm with low thresholds of 280, 250, and 290 kW/cm{sup 2}, respectively. In particular, the lasing wavelength of 239 nm is shorter compared to other reports for AlGaN lasers grown on foreign substrates including sapphire and SiC. The peak wavelength difference between the transverse-electric (TE)-polarized emission and TM-polarized emission was approximately zero for the lasers in this study, indicating the crossover of crystal-field split-off hole and heavy-hole valence bands. The rapid variation of polarization between TE- and TM-dominance versus the change in lasing wavelength from 243 to 249 nm can be attributed to a dramatic change in the TE-to-TM gain coefficient ratio for the sapphire-based DUV lasers in the vicinity of TE-TM switch.

  14. Pressure Study of Photoluminescence in GaN/InGaN/ AlGaN Quantum Wells

    NASA Astrophysics Data System (ADS)

    Perlin, Piotr; Iota, V.; Weinstein, B. A.; Wisniewski, P.; Osinski, M.; Eliseev, P. G.

    1997-03-01

    We have studied the photoluminescence (PL) from two commercial high brightness single quantum well light emitting diodes (Nichia Chem. Industs.) with In_xGa_1-x N (x=0.45 and 0.2) as the active layers under hydrostatic pressures up to 7 GPa. These diodes are the best existing light emitters at short wavelengths, having the emission wavelengths of 430 nm and 530 nm depending on the content of indium in the 30 Åthick quantum wells. Although these devices show a remarkable quality and efficiency (luminosity as high as 12 cd), the mechanism of recombination remains obscure. We discovered that the pressure coefficient for each of the observed PL peaks is dramatically (2-3 times) lower than that of the energy gap of its InGaN active layer. These observations, in conjunction with the fact that the observed emission occurs below the energy gap of the quantum well material, and also considering the anomalous temperature behavior of the emission (peak energy increasing with temperature) suggest the involvement of localized states and exclude a simple band-to-band recombination picture. These localized states may be tentatively attributed to the presence of band tails in the gap which stem from composition fluctuations in the InGaN alloy. (figures)

  15. Room-temperature deep-ultraviolet lasing at 241.5 nm of AlGaN multiple-quantum-well laser

    NASA Astrophysics Data System (ADS)

    Takano, Takayoshi; Narita, Yoshinobu; Horiuchi, Akihiko; Kawanishi, Hideo

    2004-05-01

    Room-temperature deep-ultraviolet lasing of AlxGa1-xN multiple-quantum-well lasers with an Al composition x of 0.66 was achieved at 241.5 nm under pulsed optical pumping. The threshold pumping power was approximately 1200 kW/cm2 at room temperature. The shortest lasing wavelength was 231.8 nm at 20 K. The laser structure was grown on a high-quality AlN layer, which was grown on a 4H-SiC substrate by inserting an AlN/GaN multibuffer-layer structure between the substrate and the AlN layer. Temperature dependence of lasing wavelength was also estimated to be 0.01 and 0.03 nm/K in the temperature region from 20 to 150 K and from 160 K to room temperature, respectively. The laser cavity was made of a cleaved facet of AlGaN epitaxial layers and a SiC substrate. For this purpose, it was necessary to polish the wafer to a thickness of less than 100 μm. The optimal wafer thickness for cleaving in our experiments was 60-70 μm.

  16. Plasma-assisted molecular beam epitaxy of Al(Ga)N layers and quantum well structures for optically pumped mid-UV lasers on c-Al2O3

    NASA Astrophysics Data System (ADS)

    Ivanov, S. V.; Nechaev, D. V.; Sitnikova, A. A.; Ratnikov, V. V.; Yagovkina, M. A.; Rzheutskii, N. V.; Lutsenko, E. V.; Jmerik, V. N.

    2014-06-01

    This paper reports on novel approaches developed for plasma-assisted molecular beam epitaxy of Al-rich AlGaN epilayers and quantum well heterostructures on c-sapphire, which allowed us to fabricate low-threshold optically-pumped separate confinement heterostructure lasers emitting in the mid-UV spectral range (258-290 nm) with the threshold power density below 600 kW cm-2. The optimum buffer structure has been developed which provides lowering the near-surface threading dislocation density down to 1.5 × 108 and 3 × 109 cm-2 for screw and edge types, respectively, and improving the surface morphology (rms < 0.7 nm at the area of 3 × 3 μm-2). It comprises the high-temperature (780 °C) migration enhanced epitaxy growth of a (30-70) nm thick AlN nucleation layer on c-Al2O3, followed by a 2 μm thick AlN buffer grown under the metal-rich conditions in the Al-flux modulation mode and containing several (up to 6) ultra-thin (˜3 nm) GaN interlayers grown at N-rich conditions. Proper strain engineering in AlGaN single quantum well heterostructure grown atop of the AlN buffer layer enables one to preserve dominant TE polarization of both spontaneous and stimulated emission even at shortest obtained wavelength (258 nm). The threshold power density of stimulated emission as low as 150 kW cm-2 at 289 nm for a single quantum well laser structure has been demonstrated.

  17. The effect of surface cleaning on quantum efficiency in AlGaN photocathode

    NASA Astrophysics Data System (ADS)

    Hao, Guanghui; Zhang, Yijun; Jin, Muchun; Feng, Cheng; Chen, Xinlong; Chang, Benkang

    2015-01-01

    To improve the quantum efficiency of AlGaN photocathode, various surfaces cleaning techniques for the removal of alumina and carbon from AlGaN photocathode surface were investigated. The atomic compositions of AlGaN photocathode structure and surface were measured by the X-ray photoelectron spectroscopy and Ar+ ion sputtering. It is found that the boiling KOH solution and the mixture of sulfuric acid and hydrogen peroxide, coupled with the thermal cleaning at 850 °C can effectively remove the alumina and carbon from the AlGaN photocathode surface. The quantum efficiency of AlGaN photocathode is improved to 35.1% at 240 nm, an increase of 50% over the AlGaN photocathode chemically cleaned by only the mixed solution of sulfuric acid and hydrogen peroxide and thermally cleaned at 710 °C.

  18. Effects of two-mode transverse optical phonons in bulk wurtzite AlGaN on electronic mobility in AlGaN/GaN quantum wells

    NASA Astrophysics Data System (ADS)

    Gu, Z.; Ban, S. L.; Jiang, D. D.; Qu, Y.

    2017-01-01

    The two-mode property of bulk transverse optical (TO) phonons in ternary mixed crystals of wurtzite AlxGa1-xN has been investigated by introducing impurity modes in a modified random-element isodisplacement model. Based on the dielectric continuous model, the uniaxial model, and the Lei-Ting balance equation, the effects of the two-mode property on electrostatic potentials of interface optical and confined optical phonons in AlGaN/GaN quantum wells, as well as their influences on the electronic mobility (EM), are discussed by a component-dependent weight model. Our results indicate that the total EM decreases to a minimum at first and then increases slowly with x under the influences of the competitions from the eight branches of phonons. The further calculation shows that the total EM decreases with the increment of temperature in the range of 200 K < T < 400 K and reduction of well width d. As a comparison, the EM is calculated for an Al0.58Ga0.42N/GaN quantum well at room temperature, and our result is 1263.0 cm2/Vs, which is 1.44 times of the experiment value. Our result is expected since the difference between our theory and the experiment is mainly due to the neglect of interface-roughness and other secondary scattering mechanisms. Consequently, the two-mode property of bulk TO phonons in ternary mixed crystals does affect obviously on the electron transport in the quantum wells. And our component-dependent weight model could be extended to study the electric properties influenced by optical phonons in other related heterostructures.

  19. Performance enhancement of blue light-emitting diodes with InGaN/GaN multi-quantum wells grown on Si substrates by inserting thin AlGaN interlayers

    NASA Astrophysics Data System (ADS)

    Kimura, Shigeya; Yoshida, Hisashi; Uesugi, Kenjiro; Ito, Toshihide; Okada, Aoi; Nunoue, Shinya

    2016-09-01

    We have grown blue light-emitting diodes (LEDs) having InGaN/GaN multi-quantum wells (MQWs) with thin AlyGa1-yN (0 < y < 0.3) interlayers on Si(111) substrates. It was found by high-resolution transmission electron microscopy observations and three-dimensional atom probe analysis that 1-nm-thick interlayers with an AlN mole fraction of less than y = 0.3 were continuously formed between GaN barriers and InGaN wells, and that the AlN mole fraction up to y = 0.15 could be consistently controlled. The external quantum efficiency of the blue LED was enhanced in the low-current-density region (≤45 A/cm2) but reduced in the high-current-density region by the insertion of the thin Al0.15Ga0.85N interlayers in the MQWs. We also found that reductions in both forward voltage and wavelength shift with current were achieved by inserting the interlayers even though the inserted AlGaN layers had potential higher than that of the GaN barriers. The obtained peak wall-plug efficiency was 83% at room temperature. We suggest that the enhanced electroluminescence (EL) performance was caused by the introduction of polarization-induced hole carriers in the InGaN wells on the side adjacent to the thin AlGaN/InGaN interface and efficient electron carrier transport through multiple wells. This model is supported by temperature-dependent EL properties and band-diagram simulations. We also found that inserting the interlayers brought about a reduction in the Shockley-Read-Hall nonradiative recombination component, corresponding to the shrinkage of V-defects. This is another conceivable reason for the observed performance enhancement.

  20. AlGaN Nanostructures with Extremely High Room-Temperature Internal Quantum Efficiency of Emission Below 300 nm

    NASA Astrophysics Data System (ADS)

    Toropov, A. A.; Shevchenko, E. A.; Shubina, T. V.; Jmerik, V. N.; Nechaev, D. V.; Evropeytsev, E. A.; Kaibyshev, V. Kh.; Pozina, G.; Rouvimov, S.; Ivanov, S. V.

    2016-11-01

    We present theoretical optimization of the design of a quantum well (QW) heterostructure based on AlGaN alloys, aimed at achievement of the maximum possible internal quantum efficiency of emission in the mid-ultraviolet spectral range below 300 nm at room temperature. A sample with optimized parameters was fabricated by plasma-assisted molecular beam epitaxy using the submonolayer digital alloying technique for QW formation. High-angle annular dark-field scanning transmission electron microscopy confirmed strong compositional disordering of the thus-fabricated QW, which presumably facilitates lateral localization of charge carriers in the QW plane. Stress evolution in the heterostructure was monitored in real time during growth using a multibeam optical stress sensor intended for measurements of substrate curvature. Time-resolved photoluminescence spectroscopy confirmed that radiative recombination in the fabricated sample dominated in the whole temperature range up to 300 K. This leads to record weak temperature-induced quenching of the QW emission intensity, which at 300 K does not exceed 20% of the low-temperature value.

  1. Quantum well solar cells

    NASA Astrophysics Data System (ADS)

    Barnham, K. W. J.; Ballard, I.; Connolly, J. P.; Ekins-Daukes, N. J.; Kluftinger, B. G.; Nelson, J.; Rohr, C.

    2002-04-01

    This paper reviews the experimental and theoretical studies of quantum well solar cells with an aim of providing the background to the more detailed papers on this subject in these proceedings. It discusses the way quantum wells enhance efficiency in real, lattice matched material systems and fundamental studies of radiative recombination relevant to the question of whether such enhancements are possible in ideal cells. A number of theoretical models for quantum well solar cells (QWSCs) are briefly reviewed and more detail is given of our own group's model of the dark-currents. The temperature and field dependence of QWSCs are all briefly reviewed.

  2. Quantum well nonlinear microcavities

    NASA Astrophysics Data System (ADS)

    Oudar, J. L.; Kuszelewicz, R.; Sfez, B.; Pellat, D.; Azoulay, R.

    We report on recent progress in reducing the power threshold of all-optical bistable quantum well vertical microcavities. Significant improvements are achieved through an increase of the cavity finesse, together with a reduction of the device active layer thickness. A critical intensity of 5 μW/μm 2 has been observed on a microcavity of finesse 250, with a nonlinear medium of only 18 GaAs quantum wells of 10 nm thickness. Further improvements of the Bragg mirror quality resulted in a finesse of 700 and a power-lifetime product of 15 fJ/μm 2. Microresonator pixellation allows to obtain 2-dimensional arrays. A thermally-induced alloy-mixing technique is described, which produced a 110 meV carrier confinement energy, together with a refractive index change of -.012, averaged over the 2.6 μm nonlinear medium thickness. The resulting electrical and optical confinement is shown to improve the nonlinear characteristics, by limiting lateral carrier diffusion and light diffraction.

  3. Performance enhancement of InGaN light-emitting diodes with a leakage electron recombination quantum well

    NASA Astrophysics Data System (ADS)

    Li, Fangzheng; Lin, Hong; Li, Jing; Xie, Nan; Guo, Zhiyou

    2014-12-01

    An InGaN light-emitting diodes with a leakage electron recombination (LER) quantum well have been proposed and investigated numerically by using the APSYS simulation software. The simulation results indicate that the AlGaN electron blocking layer inserted between the last two quantum wells changed the carrier concentrations distribution, and the leakage electrons can be further recombined with holes in the LER quantum well which can decrease the electrons that spill out from active region. As a result, the internal quantum efficiency and light output power are markedly improved attributed to LER quantum well.

  4. Handheld deep ultraviolet emission device based on aluminum nitride quantum wells and graphene nanoneedle field emitters.

    PubMed

    Matsumoto, Takahiro; Iwayama, Sho; Saito, Takao; Kawakami, Yasuyuki; Kubo, Fumio; Amano, Hiroshi

    2012-10-22

    We report the successful fabrication of a compact deep ultraviolet emission device via a marriage of AlGaN quantum wells and graphene nanoneedle field electron emitters. The device demonstrated a 20-mW deep ultraviolet output power and an approximately 4% power efficiency. The performance of this device may lead toward the realization of an environmentally friendly, convenient and practical deep ultraviolet light source.

  5. Wafer-scale crack-free AlGaN on GaN through two-step selective-area growth for optically pumped stimulated emission

    NASA Astrophysics Data System (ADS)

    Ko, Young-Ho; Bae, Sung-Bum; Kim, Sung-Bock; Kim, Dong Churl; Leem, Young Ahn; Cho, Yong-Hoon; Nam, Eun-Soo

    2016-07-01

    Crack-free AlGaN template has been successfully grown over entire 2-in. wafer by using 2-step selective-area growth (SAG). The GaN truncated structure was obtained by vertical growth mode with low growth temperature. AlGaN of second step was grown under lateral growth mode. Low pressure enhanced the relative ratio of lateral to vertical growth rate as well as absolute overall growth rate. High V/III ratio was favorable for lateral growth mode. Crack-free planar AlGaN was obtained under low pressure of 30 Torr and high V/III ratio of 4400. The AlGaN was crack-free over entire 2-in. wafer and had quite uniform Al-mole fraction. The dislocation density of the AlGaN with 20% Al-composition was as low as ~7.6×108 /cm2, measured by cathodoluminescence. GaN/AlGaN multi-quantum well (MQW) with cladding and waveguide layers were grown on the crack-free AlGaN template with low dislocation density. It was confirmed that the MQW on the AlGaN template emitted the stimulated emission at 355.5 nm through optical pumping experiment. The AlGaN obtained by 2-step SAG would provide high crystal quality for highly-efficient optoelectronic devices as well as the ultraviolet laser diode.

  6. Growth and Optical Properties of Al rich AlN/AlGaN Quantum Wells

    NASA Astrophysics Data System (ADS)

    Tahtamouni, T. M. Al; Nepal, N.; Nakarmi, M. L.; Lin, J. Y.; Jiang, H. X.

    2006-03-01

    Al rich AlGaN alloys are promising materials for the applications in the optoelectronic devices such as deep ultraviolet (UV) emitters and detectors in the spectral range down to 200 nm. AlGaN based UV emitters (λ<340nm) has applications in bio-chemical agent detection and medical research/ health care. To realize deep UV emission (λ< 280 nm) Al rich AlGaN based quantum wells (QWs) are required. We report here the growth of AlN/AlxGa1-xNQWs (x>0.65) on AlN/sapphire templates by metalorganic chemical vapor deposition (MOCVD). Deep UV photoluminescence (PL) was employed to study the optical properties of the QWs. Well width (Al composition) dependence was studied by varying the QW thickness (Al composition) with fixed x ˜ 0.65 (well width at 3 nm). Optical properties of these QWs such as the effects of alloy fluctuation, temperature, strain and piezoelectric field, carrier and exciton localizations on the quantum efficiency have been studied. Carrier and exciton dynamics were probed. Implications of our findings on the applications of Al rich AlN/AlGaN QWs for UV emitters and detectors will also be discussed.

  7. Quantum well multijunction photovoltaic cell

    DOEpatents

    Chaffin, R.J.; Osbourn, G.C.

    1983-07-08

    A monolithic, quantum well, multilayer photovoltaic cell comprises a p-n junction comprising a p-region on one side and an n-region on the other side, each of which regions comprises a series of at least three semiconductor layers, all p-type in the p-region and all n-type in the n-region; each of said series of layers comprising alternating barrier and quantum well layers, each barrier layer comprising a semiconductor material having a first bandgap and each quantum well layer comprising a semiconductor material having a second bandgap when in bulk thickness which is narrower than said first bandgap, the barrier layers sandwiching each quantum well layer and each quantum well layer being sufficiently thin that the width of its bandgap is between said first and second bandgaps, such that radiation incident on said cell and above an energy determined by the bandgap of the quantum well layers will be absorbed and will produce an electrical potential across said junction.

  8. Quantum well multijunction photovoltaic cell

    DOEpatents

    Chaffin, Roger J.; Osbourn, Gordon C.

    1987-01-01

    A monolithic, quantum well, multilayer photovoltaic cell comprises a p-n junction comprising a p-region on one side and an n-region on the other side, each of which regions comprises a series of at least three semiconductor layers, all p-type in the p-region and all n-type in the n-region; each of said series of layers comprising alternating barrier and quantum well layers, each barrier layer comprising a semiconductor material having a first bandgap and each quantum well layer comprising a semiconductor material having a second bandgap when in bulk thickness which is narrower than said first bandgap, the barrier layers sandwiching each quantum well layer and each quantum well layer being sufficiently thin that the width of its bandgap is between said first and second bandgaps, such that radiation incident on said cell and above an energy determined by the bandgap of the quantum well layers will be absorbed and will produce an electrical potential across said junction.

  9. N-polar III-nitride quantum well light-emitting diodes with polarization-induced doping

    SciTech Connect

    Verma, Jai; Simon, John; Protasenko, Vladimir; Kosel, Thomas; Xing, Huili Grace; Jena, Debdeep

    2011-10-24

    Nitrogen-polar III-nitride heterostructures present unexplored advantages over Ga(metal)-polar crystals for optoelectronic devices. This work reports N-polar III-nitride quantum-well ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy that integrate polarization-induced p-type doping by compositional grading from GaN to AlGaN along N-face. The graded AlGaN layer simultaneously acts as an electron blocking layer while facilitating smooth injection of holes into the active region, while the built-in electric field in the barriers improves carrier injection into quantum wells. The enhanced doping, carrier injection, and light extraction indicate that N-polar structures have the potential to exceed the performance of metal-polar ultraviolet light-emitting diodes.

  10. Quantum-Well Thermophotovoltaic Cells

    NASA Technical Reports Server (NTRS)

    Freudlich, Alex; Ignatiev, Alex

    2009-01-01

    Thermophotovoltaic cells containing multiple quantum wells have been invented as improved means of conversion of thermal to electrical energy. The semiconductor bandgaps of the quantum wells can be tailored to be narrower than those of prior thermophotovoltaic cells, thereby enabling the cells to convert energy from longer-wavelength photons that dominate the infrared-rich spectra of typical thermal sources with which these cells would be used. Moreover, in comparison with a conventional single-junction thermophotovoltaic cell, a cell containing multiple narrow-bandgap quantum wells according to the invention can convert energy from a wider range of wavelengths. Hence, the invention increases the achievable thermal-to-electrical energy-conversion efficiency. These thermophotovoltaic cells are expected to be especially useful for extracting electrical energy from combustion, waste-heat, and nuclear sources having temperatures in the approximate range from 1,000 to 1,500 C.

  11. Low threshold for optical damage in AlGaN epilayers and heterostructures

    SciTech Connect

    Saxena, Tanuj; Tamulaitis, Gintautas; Shatalov, Max; Yang, Jinwei; Gaska, Remis; Shur, Michael S.

    2013-11-28

    Laser pulses with duration much shorter than the effective carrier lifetime cause permanent photoluminescence (PL) quenching and enhancement of PL decay rate in bare-faceted and capped AlGaN epilayers and multiple quantum wells at pulse energies about an order of magnitude lower than those causing the surface to melt and degrade. In contrast, GaN epilayers exhibit no photomodification in the same excitation intensity range. PL spectra and decay kinetics show that lattice heating is not responsible for the observed changes in AlGaN, which result from the formation of nonradiative recombination centers via recombination-enhanced defect reactions occurring at high nonequilibrium carrier densities.

  12. Quantum Dot-Like Behavior of Compositional Fluctuations in AlGaN Nanowires.

    PubMed

    Belloeil, M; Gayral, B; Daudin, B

    2016-02-10

    We report on the structural and optical properties of AlxGa(1-x)N nanowire sections grown by plasma-assisted molecular beam epitaxy on GaN nanowire bases used as a template. Based on a combination of scanning electron microscopy, microphotoluminescence, time-resolved microphotoluminescence, and photon correlation experiments, it is shown that compositional fluctuations in AlxGa(1-x)N sections associated with carrier localization optically behave as quantum dots. Moreover, most of the micro-optical properties of such fluctuations are demonstrated to be very little dependent on kinetic growth parameters such as AlxGa(1-x)N growth temperature and AlN molar fraction in the alloy, which govern the macrostructural properties of AlxGa(1-x)N sections.

  13. Measurement and simulation of top- and bottom-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors with high external quantum efficiencies

    SciTech Connect

    Brendel, Moritz Helbling, Markus; Knigge, Andrea; Brunner, Frank; Weyers, Markus

    2015-12-28

    A comprehensive study on top- and bottom-illuminated Al{sub 0.5}Ga{sub 0.5}N/AlN metal-semiconductor-metal (MSM) photodetectors having different AlGaN absorber layer thickness is presented. The measured external quantum efficiency (EQE) shows pronounced threshold and saturation behavior as a function of applied bias voltage up to 50 V reaching about 50% for 0.1 μm and 67% for 0.5 μm thick absorber layers under bottom illumination. All experimental findings are in very good accordance with two-dimensional drift-diffusion modeling results. By taking into account macroscopic polarization effects in the hexagonal metal-polar +c-plane AlGaN/AlN heterostructures, new insights into the general device functionality of AlGaN-based MSM photodetectors are obtained. The observed threshold/saturation behavior is caused by a bias-dependent extraction of photoexcited holes from the Al{sub 0.5}Ga{sub 0.5}N/AlN interface. While present under bottom illumination for any AlGaN layer thickness, under top illumination this mechanism influences the EQE-bias characteristics only for thin layers.

  14. Interface effect in coupled quantum wells

    SciTech Connect

    Hao, Ya-Fei

    2014-06-28

    This paper intends to theoretically investigate the effect of the interfaces on the Rashba spin splitting of two coupled quantum wells. The results show that the interface related Rashba spin splitting of the two coupled quantum wells is both smaller than that of a step quantum well which has the same structure with the step quantum well in the coupled quantum wells. And the influence of the cubic Dresselhaus spin-orbit interaction of the coupled quantum wells is larger than that of a step quantum well. It demonstrates that the spin relaxation time of the two coupled quantum wells will be shorter than that of a step quantum well. As for the application in the spintronic devices, a step quantum well may be better than the coupled quantum wells, which is mentioned in this paper.

  15. Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells

    SciTech Connect

    Chen, G.; Rong, X.; Xu, F. J.; Tang, N.; Wang, X. Q. Shen, B.; Fu, K.; Zhang, B. S.; Hashimoto, H.; Yoshikawa, A.; Ge, W. K.

    2014-04-28

    Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4 μm, which shows potential applications on near infrared detection.

  16. Quantum Well Infrared Photodetectors (QWIP)

    NASA Technical Reports Server (NTRS)

    Levine, B. F.

    1990-01-01

    There has been a lot of interest in III-V long wavelength detectors in the lambda = 8 to 12 micron spectral range as alternatives to HgCdTe. Recently high performance quantum well infrared photodetectors (QWIP) have been demonstrated. They have a responsivity of R = 1.2 A/W, and a detectivity D(exp asterisk) sub lambda = 2 times 10(exp 10) cm Hz(exp 1/2)/W at 68 K for a QWIP with a cutoff wavelength of lambda sub c = 10.7 micron and a R = 1.0 A/W, and D(exp asterisk) sub lambda = 2 times 10(exp 10) cm Hz(exp 1/2)/W at T = 77 K for lambda sub c = 8.4 micron. These detectors consist of 50 periods of molecular beam epitaxy (MBE) grown layers doped n = 1 times 10(exp 18)cm(exp -3) having GaAs quantum well widths of 40 A and barrier widths of 500 A of Al sub x Ga sub 1-x As. Due to the well-established GaAs growth and processing techniques, these detectors have the potential for large, highly uniform, low cost, high performance arrays as well as monolithic integration with GaAs electronics, high speed and radiation hardness. Latest results on the transport physics, device performance and arrays are discussed.

  17. Quantum well cells for thermophotovoltaics

    NASA Astrophysics Data System (ADS)

    Connolly, J. P.; Rohr, C.

    2003-05-01

    Quantum well cells (QWCs) are p-i-n photovoltaic devices with multiple quantum wells (MQWs) inserted in the intrinsic region. They show the desirable characteristic for thermophotovoltaics (TPV) of an easily tuneable bandgap. This is highly relevant because the bandgaps of homostructures are restricted by the range of lattice matched substrates available. As a consequence bulk structures cannot be tuned to desirable narrow band emission spectra. QWCs, however, display tuneable bandgaps from several points of view. Firstly, the MQW bandedge is inherently tuneable by changing well depth and dimension. More significantly, strain compensated MQW systems allow lattice mismatched layers to be deposited without the formation of dislocations. This permits a much greater range of compositions and hence bandgaps than are obtainable with lattice matched systems. We first review the fundamental understanding of spectral response and dark current of the QWC and describe the initial proposal of QWCs for TPV before examining subsequent work on lattice matched InGaAsP/InP. Design limitations of the lattice matched materials can be eliminated by applying strain compensation techniques to strained materials. We show dark current measurements for lattice matched and strained systems with dark currents lower than other promising TPV designs despite longer wavelength absorption edges. This work has recently produced a QWC capable of reaching the Holmia narrow band emission peak at wavelength 1950 nm which shows the promise of this approach for TPV.

  18. Silicon Germanium Quantum Well Thermoelectrics

    NASA Astrophysics Data System (ADS)

    Davidson, Anthony Lee, III

    Today's growing energy demands require new technologies to provide high efficiency clean energy. Thermoelectrics that convert heat to electrical energy directly can provide a method for the automobile industry to recover waste heat to power vehicle electronics, hence improving fuel economy. If large enough efficiencies can be obtained then the internal combustion engine could even be replaced. Exhaust temperature for automotive application range from 400 to 800 K. In this temperature range the current state of the art materials are bulk Si1-xGex alloys. By alternating layers of Si and Si1-xGex alloy device performance may be enhanced through quantum well effects and variations in material thermal properties. In this study, superlattices designed for in-plane operation with varying period and crystallinity are examined to determine the effect on electrical and thermal properties. In-plane electrical resistivity of these materials was found to be below the bulk material at a similar doping at room temperature, confirming the role of quantum wells in electron transport. As period is reduced in the structures boundary scattering limits electron propagation leading to increased resistivity. The Seebeck coefficient measured at room temperature is higher than the bulk material, additionally lending proof to the effects of quantum wells. When examining cross-plane operation the low doping in the Si layers of the device produce high resistivity resulting from boundary scattering. Thermal conductivity was measured from 77 K up to 674 K and shows little variation due to periodicity and temperature, however an order of magnitude reduction over bulk Si1-xGex is shown in all samples. A model is developed that suggests a combination of phonon dispersion effects and strong boundary scattering. Further study of the phonon dispersion effects was achieved through the examination of the heat capacity by combining thermal diffusivity with thermal conductivity. All superlattices show a

  19. Ultra Thin Quantum Well Materials

    SciTech Connect

    Dr Saeid Ghamaty

    2012-08-16

    This project has enabled Hi-Z technology Inc. (Hi-Z) to understand how to improve the thermoelectric properties of Si/SiGe Quantum Well Thermoelectric Materials. The research that was completed under this project has enabled Hi-Z Technology, Inc. (Hi-Z) to satisfy the project goal to understand how to improve thermoelectric conversion efficiency and reduce costs by fabricating ultra thin Si/SiGe quantum well (QW) materials and measuring their properties. In addition, Hi-Z gained critical new understanding on how thin film fabrication increases the silicon substrate's electrical conductivity, which is important new knowledge to develop critical material fabrication parameters. QW materials are constructed with alternate layers of an electrical conductor, SiGe and an electrical insulator, Si. Film thicknesses were varied, ranging from 2nm to 10nm where 10 nm was the original film thickness prior to this work. The optimum performance was determined at a Si and SiGe thickness of 4nm for an electrical current and heat flow parallel to the films, which was an important conclusion of this work. Essential new information was obtained on how the Si substrate electrical conductivity increases by up to an order of magnitude upon deposition of QW films. Test measurements and calculations are accurate and include both the quantum well and the substrate. The large increase in substrate electrical conductivity means that a larger portion of the electrical current passes through the substrate. The silicon substrate's increased electrical conductivity is due to inherent impurities and thermal donors which are activated during both molecular beam epitaxy and sputtering deposition of QW materials. Hi-Z's forward looking cost estimations based on future high performance QW modules, in which the best Seebeck coefficient and electrical resistivity are taken from separate samples predict that the electricity cost produced with a QW module could be achieved at <$0.35/W. This price would

  20. High quantum efficiency ultraviolet/blue AlGaN /InGaN photocathodes grown by molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Leopold, D. J.; Buckley, J. H.; Rebillot, P.

    2005-08-01

    Enormous technological breakthroughs have been made in optoelectronic devices through the use of advanced heteroepitaxial-semiconductor crystal-growth techniques. This technology is being extended toward enhanced ultraviolet/blue single-photon detection through the design and fabrication of atomically tailored heteroepitaxial GaAlN /GaInN photocathode device structures. The AlGaN /InGaN system is ideal because the band gap can be tailored over an energy range from 0.8 to 6.2 eV and epitaxial thin-film layers can be grown directly on optically transparent sapphire substrates. Although a single p-type GaN layer activated with cesium can produce reasonably high quantum efficiency in the ultraviolet wave band, a more complex design is necessary to achieve high levels extending into the blue region. In the present work, band-gap engineering concepts have been utilized to design heterostructure photocathodes. The increased level of sophistication offered by this approach has been exploited in an attempt to precisely control photoelectron transport to the photocathode surface. Thin heterostructure layers designed for transmission-mode detection were fabricated by molecular-beam epitaxy. A quantum efficiency of 40% at 250 nm was achieved using a thin, compositionally graded GaN /InGaN layer, epitaxially grown on a sapphire substrate. Further improvements are anticipated through continued optimization, defect reduction, and more complex photocathode designs.

  1. Large TE polarized optical gain from AlInN-delta-GaN quantum well for ultraviolet lasers

    NASA Astrophysics Data System (ADS)

    Liu, Cheng; Ooi, Yu Kee; Zhang, Jing

    2016-03-01

    Ultraviolet (UV) lasers with wavelength (λ) < 300 nm have important applications in free-space communication, water/air purification, and biochemical agent detection. Conventionally, AlGaN quantum wells (QWs) are widely used as active region for UV lasers. However, high-efficiency electrically injected mid-UV lasers with λ ~ 250-300 nm are still very challenging as the corresponding AlGaN QWs suffer from severe band-mixing effect due to the presence of the valence sub-band crossover between the heavy-hole (HH) and crystal-field split off (CH) sub-bands, which would result in very low optical gain in such wavelength regime. Therefore, in this work, we propose and investigate the use of AlInN material system as an alternative for mid-UV lasers. Nanostructure engineering by the use of AlInN-delta-GaN QW has been performed to enable dominant conduction band - HH sub-band transition as well as optimized electron-hole wave function overlap. The insertion of the ultra-thin delta-GaN layer, which is lattice-matched to Al0.82In0.18N layer, would localize the wave functions strongly toward the center of the active region, leading to large transverse electric (TE) polarized optical gain (gTE) for λ~ 250- 300 nm. From our finding, the use of AlInN-delta-GaN QW resulted in ~ 3-times enhancement in TE-polarized optical gain, in comparison to that of conventional AlGaN QW, for gain media emitting at ~ 255 nm. The peak emission wavelength can be tuned by varying the delta layer thickness while maintaining large TE gain. Specifically, gTE ~ 3700 cm-1 was obtained for λ ~ 280-300 nm, which are very challenging for conventional AlGaN QW active region.

  2. Broadspectrum InGaAs/InP Quantum Well Infrared Photodetector via Quantum Well Intermixing

    NASA Technical Reports Server (NTRS)

    Sengupta, D.; Chang, Y. C.; Stillman, G.

    1998-01-01

    We have demonstrated red shifting and broadening of the wavelength response of a bound-to-continuum ultra-thin p-type InGaAs/InP quantum well infrared photodetector (QWIP) after growth via quantum well intermixing.

  3. Quantum dots as active material for quantum cascade lasers: comparison to quantum wells

    NASA Astrophysics Data System (ADS)

    Michael, Stephan; Chow, Weng W.; Schneider, Hans Christian

    2016-03-01

    We review a microscopic laser theory for quantum dots as active material for quantum cascade lasers, in which carrier collisions are treated at the level of quantum kinetic equations. The computed characteristics of such a quantum-dot active material are compared to a state-of-the-art quantum-well quantum cascade laser. We find that the current requirement to achieve a comparable gain-length product is reduced compared to that of the quantum-well quantum cascade laser.

  4. Ultrabroad stimulated emission from quantum well laser

    SciTech Connect

    Wang, Huolei; Zhou, Xuliang; Yu, Hongyan; Mi, Junping; Wang, Jiaqi; Bian, Jing; Wang, Wei; Pan, Jiaoqing; Ding, Ying; Chen, Weixi

    2014-06-23

    Observation of ultrabroad stimulated emission from a simplex quantum well based laser at the center wavelength of 1.06 μm is reported. With increased injection current, spectrum as broad as 38 nm and a pulsed output power of ∼50 mW have been measured. The experiments show evidence of an unexplored broad emission regime in the InGaAs/GaAs quantum well material system, which still needs theoretical modeling and further analysis.

  5. Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells

    NASA Astrophysics Data System (ADS)

    Edmunds, C.; Shao, J.; Shirazi-HD, M.; Manfra, M. J.; Malis, O.

    2014-07-01

    We demonstrate THz intersubband absorption (15.6-26.1 meV) in m-plane AlGaN/GaN quantum wells. We find a trend of decreasing peak energy with increasing quantum well width, in agreement with theoretical expectations. However, a blue-shift of the transition energy of up to 14 meV was observed relative to the calculated values. This blue-shift is shown to decrease with decreasing charge density and is, therefore, attributed to many-body effects. Furthermore, a ˜40% reduction in the linewidth (from roughly 8 to 5 meV) was obtained by reducing the total sheet density and inserting undoped AlGaN layers that separate the wavefunctions from the ionized impurities in the barriers.

  6. Formation and characteristics of AlGaN-based three-dimensional hexagonal nanopyramid semi-polar multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Tian, Yingdong; Yan, Jianchang; Zhang, Yun; Zhang, Yonghui; Chen, Xiang; Guo, Yanan; Wang, Junxi; Li, Jinmin

    2016-05-01

    We demonstrated for the first time the formation and study of semi-polar AlGaN multiple-quantum-wells (MQWs) grown on highly regular hexagonal AlN nanopyramids. The AlN nanopyramids were obtained by a metal-organic chemical vapor phase deposition regrowth method on a well-ordered AlN nanorod array prepared by a top-down etching process. The growth mechanism of the AlN nanopyramids was ascribed to the slow growth of the (101&cmb.macr;1) semi-polar plane, which resulted from hydrogen passivation. Beneath the semi-polar facets, air voids were formed. This was attributed to the insufficient delivery of gas reactants to the bottom of the nanorods during the growth process. The polarization effect in semi-polar AlGaN MQWs was numerically calculated. The results showed that the internal electric field (IEF) in the semi-polar MQWs was remarkably reduced by 80% in comparison with c-plane MQWs. Power dependent photoluminescence indicated that the semi-polar AlGaN MQWs had negligible wavelength shifts that resulted from the reduced IEF, which was in accordance with theoretical predictions. In addition, epitaxial strain was greatly relieved in the AlN regrowth layer, which was revealed from the peak shift of the E2(high) phonon using micro-Raman spectroscopy. The advantages of AlGaN-based hexagonal nanopyramid semi-polar three dimensional nanostructures would lead to a large improvement of output power in UV-LEDs.

  7. Photonic crystal slab quantum well infrared photodetector

    NASA Astrophysics Data System (ADS)

    Kalchmair, S.; Detz, H.; Cole, G. D.; Andrews, A. M.; Klang, P.; Nobile, M.; Gansch, R.; Ostermaier, C.; Schrenk, W.; Strasser, G.

    2011-01-01

    In this letter we present a quantum well infrared photodetector (QWIP), which is fabricated as a photonic crystal slab (PCS). With the PCS it is possible to enhance the absorption efficiency by increasing photon lifetime in the detector active region. To understand the optical properties of the device we simulate the PCS photonic band structure, which differs significantly from a real two-dimensional photonic crystal. By fabricating a PCS-QWIP with 100x less quantum well doping, compared to a standard QWIP, we are able to see strong absorption enhancement and sharp resonance peaks up to temperatures of 170 K.

  8. Time-Resolved Photoluminescence Studies of InGaN/AlGaN Multiple Quantum Wells

    NASA Astrophysics Data System (ADS)

    Zeng, K. C.; Smith, M.; Lin, J. Y.; Jiang, H. X.; Robert, J. C.; Piner, E. L.; McIntosh, F. G.; Bahbahani, M.; Bedair, S. M.; Zavada, J.

    1997-03-01

    Picosecond time-resolved photoluminescence (PL) spectroscopy has been employed to study the dynamic processes of optical transitions in InGaN/AlGaN multiple quantum wells (MQW) grown by metal-organic chemical vapor deposition (MOCVD). The dynamical behavior of the PL emission reveals that the main emission line in these MQW is the combination of the localized exciton and a band-to-impurity emission lines. The spectral lineshape and the recombination dynamics of the localized exciton and of the band-to-impurity transitions have been systematically investigated at different temperatures and excitation intensities and for MQW with different structures and growth conditions. From these studies, important parameters, including the localization energy and the recombination lifetimes of the localized excitons in InGaN/AlGaN quantum wells, the well width fluctuation, alloy compositions in the well and the barrier materials, and the band offset between InGaN and AlGaN can be deduced. Comparing with time-resolved PL results of InGaN/GaN and GaN/AlGaN MQW, important effects of interface on the optical properties of the III-nitride MQW have been evaluated. Implications of our results to device applications will be discussed.

  9. Recombination Dynamics in Quantum Well Semiconductor Structures

    NASA Astrophysics Data System (ADS)

    Fouquet, Julie Elizabeth

    Time-resolved and time-integrated photoluminescence as a function of excitation energy density have been observed in order to study recombination dynamics in GaAs/Al(,x)Ga(,1 -x)As quantum well structures. The study of room temperature photoluminescence from the molecular beam epitaxy (MBE) -grown multiple quantum well structure and photoluminescence peak energy as a function of tem- perature shows that room temperature recombination at excitation densities above the low 10('16) cm('-3) level is due to free carriers, not excitons. This is the first study of time-resolved photoluminescence of impurities in quantum wells; data taken at different emission wave- lengths at low temperatures shows that the impurity-related states at photon energies lower than the free exciton peaks luminesce much more slowly than the free exciton states. Results from a similar structure grown by metal -organic chemical vapor deposition (MOCVD) are explained by saturation of traps. An unusual increase in decay rate observed tens of nanoseconds after excitation is probably due to carriers falling out of the trap states. Since this is the first study of time-resolved photoluminescence of MOCVD-grown quantum well structures, this unusual behavior may be realted to the MOCVD growth process. Further investigations indi- cate that the traps are not active at low temperatures; they become active at approximately 150 K. The traps are probably associated with the (hetero)interfaces rather than the bulk Al(,x)Ga(,1-x)As material. The 34 K photoluminescence spectrum of this sample revealed a peak shifted down by approximately 36 meV from the main peak. Time-resolved and time-integrated photoluminescence results here show that this peak is not a stimulated phonon emission sideband, but rather is an due to an acceptor impurity, probably carbon. Photo- luminescence for excitation above and below the barrier bandgap shows that carriers are efficiently collected in the wells in both single and multiple

  10. Coherent state polarons in quantum wells

    NASA Astrophysics Data System (ADS)

    Thilagam, A.; Lohe, M. A.

    2005-01-01

    We investigate the polaronic effects of an electron confined in a quantum well, which we describe through its algebraic properties using su (1 , 1), taking into account the electron-bulk longitudinal-optical phonon interaction. We construct the variational wave function as the direct product of an electronic part and a part describing coherent phonons generated by the Low-Lee-Pines transformation from the vacuum state. We use two explicit forms of coherent states, Perelomov and Barut-Girardello states, to represent the electronic part in the quantum well spectrum. Our results show that in a coherent state basis for electrons the basic polaron parameters such as the energy gap shift and effective mass are further enhanced compared to those obtained with the conventional sinusoidal form of the basis. The difference between the two types of quantum well coherent states appears in polaronic interactions in quantum wells. We extend the calculations in order to estimate polaron lifetimes for a variety of different material systems.

  11. Spectroscopy of GaAs quantum wells

    SciTech Connect

    West, L.C.

    1985-07-01

    A new type of optical dipole transition in GaAs quantum wells has been observed. The dipole occurs between two envelope states of the conduction band electron wavefunction, and is called a quantum well envelope state transition (QWEST). The QWEST is observed by infrared absorption in three different samples with quantum well thicknesses 65, 82, and 92 A and resonant energies of 152, 121, and 108 MeV, respectively. The oscillator strength is found to have values of over 12, in good agreement with prediction. The linewidths are seen as narrow as 10 MeV at room temperature and 7 MeV at low temperature, thus proving a narrow line resonance can indeed occur between transitions of free electrons. Techniques for the proper growth of these quantum well samples to enable observation of the QWEST have also been found using (AlGa)As compounds. This QWEST is considered to be an ideal material for an all optical digital computer. The QWEST can be made frequency matched to the inexpensive Carbon Dioxide laser with an infrared wavelength of 10 microns. The nonlinearity and fast relaxation time of the QWEST indicate a logic element with a subpicosecond switch time can be built in the near future, with a power level which will eventually be limited only by the noise from a lack of quanta to above approximately 10 microwatts. 64 refs., 35 figs., 6 tabs.

  12. Inverted vertical algan deep ultraviolet leds grown on p-SiC substrates by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Nothern, Denis Maurice

    Deep ultraviolet light emitting diodes (UV LEDs) are an important emerging technology for a number of applications such as water/air/surface disinfection, communications, and epoxy curing. However, as of yet, deep UV LEDs grown on sapphire substrates are neither efficient enough nor powerful enough to fully serve these and other potential applications. The majority of UV LEDs reported so far in the literature are grown on sapphire substrates and their design consists of AlGaN quantum wells (QWs) embedded in an AlGaN p-i-n junction with the n-type layer on the sapphire. These devices suffer from a high concentration of threading defects originating from the large lattice mismatch between the sapphire substrate and AlGaN alloys. Other issues include the poor doping efficiency of the n- and particularly the p-AlGaN alloys, the extraction of light through the sapphire substrate, and the heat dissipation through the thermally insulating sapphire substrate. These problems have historically limited the internal quantum efficiency (IQE), injection efficiency (IE), and light extraction efficiency (EE) of devices. As a means of addressing these efficiency and power challenges, I have contributed to the development of a novel inverted vertical deep UV LED design based on AlGaN grown on p-SiC substrates. Starting with a p-SiC substrate that serves as the p-type side of the p-i-n junction largely eliminates the necessity for the notoriously difficult p-type doping of AlGaN alloys, and allows for efficient heat dissipation through the highly thermally conductive SiC substrate. UV light absorption in the SiC substrate can be addressed by first growing p-type doped distributed Bragg reflectors (DBRs) on top of the substrate prior to the deposition of the active region of the device. A number of n-AlGaN films, AlGaN/AlGaN multiple quantum wells, and p-type doped AlGaN DBRs were grown by molecular beam epitaxy (MBE). These were characterized in situ by reflected high energy electron

  13. Semiconductor Lasers Containing Quantum Wells in Junctions

    NASA Technical Reports Server (NTRS)

    Yang, Rui Q.; Qiu, Yueming

    2004-01-01

    In a recent improvement upon In(x)Ga(1-x)As/InP semiconductor lasers of the bipolar cascade type, quantum wells are added to Esaki tunnel junctions, which are standard parts of such lasers. The energy depths and the geometric locations and thicknesses of the wells are tailored to exploit quantum tunneling such that, as described below, electrical resistances of junctions and concentrations of dopants can be reduced while laser performances can be improved. In(x)Ga(1-x)As/InP bipolar cascade lasers have been investigated as sources of near-infrared radiation (specifically, at wavelengths of about 980 and 1,550 nm) for photonic communication systems. The Esaki tunnel junctions in these lasers have been used to connect adjacent cascade stages and to enable transport of charge carriers between them. Typically, large concentrations of both n (electron-donor) and p (electron-acceptor) dopants have been necessary to impart low electrical resistances to Esaki tunnel junctions. Unfortunately, high doping contributes free-carrier absorption, thereby contributing to optical loss and thereby, further, degrading laser performance. In accordance with the present innovation, quantum wells are incorporated into the Esaki tunnel junctions so that the effective heights of barriers to quantum tunneling are reduced (see figure).

  14. Quantum confinement in transition metal oxide quantum wells

    SciTech Connect

    Choi, Miri; Lin, Chungwei; Butcher, Matthew; Posadas, Agham B.; Demkov, Alexander A.; Rodriguez, Cesar; Zollner, Stefan; He, Qian; Borisevich, Albina Y.

    2015-05-11

    We report on the quantum confinement in SrTiO{sub 3} (STO) quantum wells (QWs) grown by molecular beam epitaxy. The QW structure consists of LaAlO{sub 3} (LAO) and STO layers grown on LAO substrate. Structures with different QW thicknesses ranging from two to ten unit cells were grown and characterized. Optical properties (complex dielectric function) were measured by spectroscopic ellipsometry in the range of 1.0 eV–6.0 eV at room temperature. We observed that the absorption edge was blue-shifted by approximately 0.39 eV as the STO quantum well thickness was reduced to two unit cells. This demonstrates that the energy level of the first sub-band can be controlled by the QW thickness in a complex oxide material.

  15. Carrier cooling in colloidal quantum wells.

    PubMed

    Pelton, Matthew; Ithurria, Sandrine; Schaller, Richard D; Dolzhnikov, Dmitriy S; Talapin, Dmitri V

    2012-12-12

    It has recently become possible to chemically synthesize atomically flat semiconductor nanoplatelets with monolayer-precision control over the platelet thickness. It has been suggested that these platelets are quantum wells; that is, carriers in these platelets are confined in one dimension but are free to move in the other two dimensions. Here, we report time-resolved photoluminescence and transient-absorption measurements of carrier relaxation that confirm the quantum-well nature of these nanomaterials. Excitation of the nanoplatelets by an intense laser pulse results in the formation of a high-temperature carrier population that cools back down to ambient temperature on the time scale of several picoseconds. The rapid carrier cooling indicates that the platelets are well-suited for optoelectronic applications such as lasers and modulators.

  16. Strained quantum well photovoltaic energy converter

    NASA Technical Reports Server (NTRS)

    Freundlich, Alexandre (Inventor); Renaud, Philippe (Inventor); Vilela, Mauro Francisco (Inventor); Bensaoula, Abdelhak (Inventor)

    1998-01-01

    An indium phosphide photovoltaic cell is provided where one or more quantum wells are introduced between the conventional p-conductivity and n-conductivity indium phosphide layer. The approach allows the cell to convert the light over a wider range of wavelengths than a conventional single junction cell and in particular convert efficiently transparency losses of the indium phosphide conventional cell. The approach hence may be used to increase the cell current output. A method of fabrication of photovoltaic devices is provided where ternary InAsP and InGaAs alloys are used as well material in the quantum well region and results in an increase of the cell current output.

  17. Hot Electron Energy Relaxation in Quantum Wells

    NASA Astrophysics Data System (ADS)

    Yang, Chia-Hung

    We present experimental results on hot electron relaxation in doped bulk GaAs and quantum wells. Using steady state photoluminescence we measured the electron -LO phonon scattering time for thermalized hot electrons in quantum wells. The results are in good agreement with our theoretical calculation of electron-LO phonon interaction in two dimensional systems. Within random phase approximation, the emitted LO phonons may couple to two dimensional plasmons. Both the screening and phonon reabsorption properties can be drastically changed as a function of electron density, temperature and phonon lifetime. Theoretical energy relaxation rates, including dynamical screening and phonon reabsorption effects, will be presented. For hot electrons with energies well above the LO phonon energy, we developed a two-beam, lock-in technique to measure the energy-resolved cooling rate. In the case of quantum wells, hot electrons relax at a constant rate. For heavily doped bulk GaAs, the relaxation rate is inversely proportional to electron kinetic energy. The new method demonstrates itself as a valuable way to study the fast initial relaxation which would otherwise need femtosecond pulse laser techniques.

  18. Luminescence Rings in Quantum Well Structures

    NASA Astrophysics Data System (ADS)

    Denev, S.; Liu, Y.; Snoke, D.; Rapaport, R.; Chen, Gang; Simon, S.; Pfeiffer, L.; West, K.

    2004-03-01

    An unique ring-shaped luminescence pattern with size of hundreds of microns to millimeters has been observed in GaAs-based quantum well structures excited by weak laser light [1]. The ring persists up to high temperatures, and its size can be manipulated by the laser power, electric field, external stress or magnetic field. We give a detailed description of the effect and discuss various proposed explanations including an optical effect, diffusion and excitonic superfluidity. A realistic explanation based on a simple, nonlinear model of charge separation is proposed, and numerical results from the model are compared to the experiment. This work has been supported by the National Science Foundation under grant No. DMR-0102457 and by the Department of Energy under grant No. DE-FG0299ER45780 [1] D. Snoke, S. Denev, Y. Liu, L. Pfeiffer, and K. West, "Long-range Transport in Excitonic Dark States in Coupled Quantum Wells," Nature 418, 754 (2002).

  19. Excitonic susceptibility in near triangular quantum wells

    NASA Astrophysics Data System (ADS)

    Anitha, A.; Arulmozhi, M.

    2017-03-01

    Diamagnetic susceptibility and binding energy of an exciton in a near triangular quantum well, with potential profile proportional to |z|2/3 composed of GaAs/Ga1- x Al x As and ZnO/Zn1- x Mg x O are calculated as a function of the wellwidth and concentration of Al and Mg respectively varying the magnetic field applied along growth direction (i.e. z-axis). Diamagnetic susceptibility of light hole exciton and heavy hole exciton, shows inverse behaviors in the two materials below 20 nm wellwidth and the binding energy of both excitons increases, as the magnetic field increases. The results obtained, are compared with those of quantum wells with varied potential profiles and the experimental results reported in the literature.

  20. An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission

    PubMed Central

    Lee, Jong Won; Kim, Dong Yeong; Park, Jun Hyuk; Schubert, E. Fred; Kim, Jungsub; Lee, Jinsub; Kim, Yong-Il; Park, Youngsoo; Kim, Jong Kyu

    2016-01-01

    While there is an urgent need for semiconductor-based efficient deep ultraviolet (DUV) sources, the efficiency of AlGaN DUV light-emitting diodes (LEDs) remains very low because the extraction of DUV photons is significantly limited by intrinsic material properties of AlGaN. Here, we present an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes for maximizing the power conversion efficiency. PMID:26935402

  1. An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission.

    PubMed

    Lee, Jong Won; Kim, Dong Yeong; Park, Jun Hyuk; Schubert, E Fred; Kim, Jungsub; Lee, Jinsub; Kim, Yong-Il; Park, Youngsoo; Kim, Jong Kyu

    2016-03-03

    While there is an urgent need for semiconductor-based efficient deep ultraviolet (DUV) sources, the efficiency of AlGaN DUV light-emitting diodes (LEDs) remains very low because the extraction of DUV photons is significantly limited by intrinsic material properties of AlGaN. Here, we present an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes for maximizing the power conversion efficiency.

  2. Fractional Quantum Hall States in a Ge Quantum Well.

    PubMed

    Mironov, O A; d'Ambrumenil, N; Dobbie, A; Leadley, D R; Suslov, A V; Green, E

    2016-04-29

    Measurements of the Hall and dissipative conductivity of a strained Ge quantum well on a SiGe/(001)Si substrate in the quantum Hall regime are reported. We analyze the results in terms of thermally activated quantum tunneling of carriers from one internal edge state to another across saddle points in the long-range impurity potential. This shows that the gaps for different filling fractions closely follow the dependence predicted by theory. We also find that the estimates of the separation of the edge states at the saddle are in line with the expectations of an electrostatic model in the lowest spin-polarized Landau level (LL), but not in the spin-reversed LL where the density of quasiparticle states is not high enough to accommodate the carriers required.

  3. Spatially indirect excitons in coupled quantum wells

    SciTech Connect

    Lai, Chih-Wei Eddy

    2004-03-01

    Microscopic quantum phenomena such as interference or phase coherence between different quantum states are rarely manifest in macroscopic systems due to a lack of significant correlation between different states. An exciton system is one candidate for observation of possible quantum collective effects. In the dilute limit, excitons in semiconductors behave as bosons and are expected to undergo Bose-Einstein condensation (BEC) at a temperature several orders of magnitude higher than for atomic BEC because of their light mass. Furthermore, well-developed modern semiconductor technologies offer flexible manipulations of an exciton system. Realization of BEC in solid-state systems can thus provide new opportunities for macroscopic quantum coherence research. In semiconductor coupled quantum wells (CQW) under across-well static electric field, excitons exist as separately confined electron-hole pairs. These spatially indirect excitons exhibit a radiative recombination time much longer than their thermal relaxation time a unique feature in direct band gap semiconductor based structures. Their mutual repulsive dipole interaction further stabilizes the exciton system at low temperature and screens in-plane disorder more effectively. All these features make indirect excitons in CQW a promising system to search for quantum collective effects. Properties of indirect excitons in CQW have been analyzed and investigated extensively. The experimental results based on time-integrated or time-resolved spatially-resolved photoluminescence (PL) spectroscopy and imaging are reported in two categories. (i) Generic indirect exciton systems: general properties of indirect excitons such as the dependence of exciton energy and lifetime on electric fields and densities were examined. (ii) Quasi-two-dimensional confined exciton systems: highly statistically degenerate exciton systems containing more than tens of thousands of excitons within areas as small as (10 micrometer)2 were

  4. Fractional quantum Hall effect in HgTe quantum wells

    NASA Astrophysics Data System (ADS)

    Wang, Jianhui

    2016-02-01

    We study the possibility of fractional quantum Hall effects in HgTe quantum wells using exact diagonalization. Our results show that Laughlin states, the Moore-Read state, and the Read-Rezayi Z3 state can all be supported. However, near the level crossing point (of the single-particle spectrum) the gap can be destroyed by Landau level mixing, and the Moore-Read state and the Read-Rezayi state dominate over their respective competing states only for wide wells. For smaller well widths the Moore-Read state crosses over to the composite fermion Fermi sea, while the Read-Rezayi state loses its dominance over the hierarchy state.

  5. Short-period intrinsic Stark GaN /AlGaN superlattice as a Bloch oscillator

    NASA Astrophysics Data System (ADS)

    Litvinov, V. I.; Manasson, A.; Pavlidis, D.

    2004-07-01

    We discuss the properties of AlGaN /GaN superlattice (SL) related to the feasibility of a terahertz-range oscillator. The distortion of the conduction-band profile by the polarization fields has been taken into account. We have calculated the conduction-band offset between the pseudomorphic AlGaN barrier and the GaN quantum well, the first miniband width and energy dispersion, as functions of Al content in the barrier. As the short-period SL miniband energy dispersion contains contributions from next to nearest neighbors, it causes anharmonic electron oscillations at the multiples of the fundamental Bloch frequency. The Al content and SL period that favor high-frequency oscillations have been determined.

  6. Quantum Well States in Magnetic Nanostructures

    NASA Astrophysics Data System (ADS)

    Qiu, Z. Q.

    2000-03-01

    Quantum Well (QW) states in magnetic nanostructures play an important role in many phenomena such as the oscillatory interlayer coupling in giant magnetoresistance (GMR) multilayers. Photoemission provides the most direct measurement of QW states in k-space. In this talk, I will report our recent results on QW states obtained at the Advanced Light Source (ALS) of Lawrence Berkeley National Laboratory. The high brightness and fine spot size of photon beam at beamline 7 of ALS allow the performance of photoemission experiment on double wedged samples. First, the nature of QW states in metallic thin films will be discussed. Using one monolayer Ni as a probe, we show that the amplitude of the QW wavefunction is described by an envelope function. Second, quantum interference between two QWs will be discussed. Finally, we demonstrate the interconnection between the QW states and the oscillatory interlayer coupling in magnetic multilayers.

  7. Quantum state transfer in double-quantum-well devices

    NASA Technical Reports Server (NTRS)

    Jakumeit, Jurgen; Tutt, Marcel; Pavlidis, Dimitris

    1994-01-01

    A Monte Carlo simulation of double-quantum-well (DQW) devices is presented in view of analyzing the quantum state transfer (QST) effect. Different structures, based on the AlGaAs/GaAs system, were simulated at 77 and 300 K and optimized in terms of electron transfer and device speed. The analysis revealed the dominant role of the impurity scattering for the QST. Different approaches were used for the optimization of QST devices and basic physical limitations were found in the electron transfer between the QWs. The maximum transfer of electrons from a high to a low mobility well was at best 20%. Negative differential resistance is hampered by the almost linear rather than threshold dependent relation of electron transfer on electric field. By optimizing the doping profile the operation frequency limit could be extended to 260 GHz.

  8. An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: preferential outcoupling of strong in-plane emission (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Kim, Jong Kyu; Lee, Jong Won; Kim, Dong-Yeong; Park, Jun Hyuk; Schubert, E. Fred; Kim, Jungsub; Kim, Yong-Il

    2016-09-01

    AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) are being developed for their numerous applications such as purification of air and water, sterilization in food processing, UV curing, medical-, and defense-related light sources. However, external quantum efficiency (EQE) of AlGaN-based DUV LEDs is very poor (<5% for 250nm) particularly due to low hole concentration and light extraction efficiency (LEE). Conventional LEE-enhancing techniques used for GaInN-based visible LEDs turned out to be ineffective for DUV LEDs due to difference in intrinsic material property between GaInN and AlGaN (Al< 30%). Unlike GaInN visible LEDs, DUV light from a high Al-content AlGaN active region is strongly transverse-magnetic (TM) polarized, that is, the electric field vector is parallel to the (0001) c-axis and shows strong sidewall emission through m- or a-plane due to crystal-field split-off hole band being top most valence band. Therefore, a new LEE-enhancing approach addressing the unique intrinsic property of AlGaN DUV LEDs is strongly desired. In this study, an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells is presented. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage simultaneously. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes to maximize the power conversion efficiency.

  9. Development of ultraviolet electroabsorption modulators and light emitting diodes based on AlGaN alloys

    NASA Astrophysics Data System (ADS)

    Kao, Chen-Kai

    The research in this dissertation addressed the development of ultraviolet (UV) electroabsorption modulators and ultraviolet light emitting diodes (UV-LEDs), covering the spectral range from 360 to 265 nm. The materials system for both types of devices is the AlGaN alloys, either in bulk or quantum well (QW) form, grown by plasma-assisted molecular beam epitaxy (MBE). Potential applications of these devices either individually or in combination include UV non-line-of-sight free-space-optical communications, UV sensing and spectroscopic systems, Q-switched pulsed lasers, water/air purification and various medical applications. Optical modulators based on cubic III-V semiconductors have been the subject of extensive research over the past several years. Such devices are typically based on the quantum-confined Stark effect to modify the absorption spectrum of multiple-quantum-well active regions. On the other hand, in wurtzite III-Nitride semiconductors, strong electric fields are already present in the quantum wells due to intrinsic and piezoelectric polarizations; as a result, an even greater change in absorption is achievable, especially if the internal fields are compensated by the external bias so that the net field in the quantum wells is reduced. A number of UV electroabsorption modulators based on Schottky barriers on bulk GaN and GaN /AlGaN multiple quantum wells (MQWs) were designed, fabricated and characterized. Record modulation ratio of 30 % was obtained from bulk GaN Schottky barrier modulators at the excitonic resonant energy of 3.45 eV (360 nm) upon the application of 12 V reverse bias. Similarly, record modulation ratio of 43% was obtained from GaN / AlGaN MQWs Schottky barrier modulators at the excitonic resonant energy of 3.48 eV (356 nm) upon the application of 17 V reverse bias. The external quantum efficiency (EQE) of AlGaN based deep UV LEDS is relatively low (˜1% at 270 nm). This is generally attributed to the poor internal quantum efficiency

  10. Quantum Well Infrared Photodetectors (QWIPs) for Astronomy

    NASA Technical Reports Server (NTRS)

    Gunapala, S. D.; Bandara, S. V.; Liu, J. K.; Luong, E.; Bock, J. J.; Ressler, M. E.; Werner, M. W.

    1998-01-01

    In recent years, many research groups in the world have demonstrated large format Quantum Well Infrared Photodetector (QWIP) focal plane arrays for various thermal imaging applications. QWIPs as opposed to conventional low bandgap infrared detectors, are limited by thermionic dark current and not tunneling currents down to 30K or less. As a result the performance of QWIPs can be substantially improved (orders of magnitude) by cooling from 70K to 30K. Cooling does not induce any nonuniformity or 1/f noise in QWIP focal plane arrays. In this paper, we discuss the development of highly uniform long- wavelength QWIPs for astronomical applications.

  11. Enhancement of blue InGaN light-emitting diodes by using AlGaN increased composition-graded barriers

    NASA Astrophysics Data System (ADS)

    Yan, Lei; Zhiqiang, Liu; Miao, He; Xiaoyan, Yi; Junxi, Wang; Jinmin, Li; Shuwen, Zheng; Shuti, Li

    2015-05-01

    The characteristics of nitride-based blue light-emitting diodes (LEDs) with AlGaN composition-graded barriers are analyzed numerically. The carrier concentrations in the quantum wells (QWs), the energy band diagrams, the electrostatic fields, and the light output power are investigated by APSYS software. The simulation results show that the LED with AlGaN composition-graded barriers has a better performance than its AlGaN/InGaN counterpart owing to the increase of hole injection and the enhancement of electron confinement. The simulation results also suggest that the output power is enhanced significantly and the efficiency droop is markedly improved when the AlGaN barriers are replaced by AlGaN composition-graded barriers. Project supported by the National High Technology Program of China (Nos. 2011AA03A105, 2013AA03A101), the National Natural Science Foundation of China (Nos. 61306051, 61306050, 11474105), the Beijing Municipal Science and Technology Project (No. D12110300140000), the National Basic Research Program of China (No. 2011CB301902), the Industry-Academia-Research Union Special Fund of Guangdong Province of China (No. 2012B091000169), the Science & Technology Innovation Platform of Industry-Academia-Research Union of Guangdong Province-Ministry Cooperation Special Fund of China (No. 2012B090600038), the Specialized Research Fund for the Doctoral Program of Higher Education (No. 20134407110008), and the Science research innovation foundation of South China Normal University of China (No. 2013kyjj041).

  12. Corrugated Quantum Well Infrared Photodetectors and Arrays

    NASA Technical Reports Server (NTRS)

    Choi, K. K.; Chen, C. J.; Rohkinson, L. P.; Das, N. C.; Jhabvala, M.

    1999-01-01

    Quantum well infrared photodetectors (QWIPs) have many advantages in infrared detection, mainly due to the mature Ill-V material technology. The employment of the corrugation structure further advances the technology by providing a simple, yet efficient light-coupling scheme. A C-QWIP enjoys the same flexibility as a detector with intrinsic normal incident absorption. In this paper, we will discuss the utilities of C-QWIPs in different applications, including two-color detection and polarization-sensitive detection. Besides practical applications, C-QWIPs are also useful in detector characterization. They can be used for measuring the absorption coefficient of light propagating parallel to the layers under bias and providing information on the energy resolved photoconductive gain. These two quantities have never been measured before. Based on the corrugation design, we have made several modifications that further improve the detector sensitivity without increasing its complexity. Other than the C-QWIP structure, we also continue searching for other sensitive detector architectures. In a quantum grid infrared photodetector, 3-dimensional electron confinement can be achieved, with which the detector is able to absorb light in all directions. At the same time, the photoconductive gain can also be improved. We further improve the design using a blazed structure. All the experimental results are supported by a rigorous electromagnetic modal transmission-line theory developed especially for these types of structures. Preliminary thermal imaging using C-QWIP FPAs validates the advantages of the present approach.

  13. Spin-orbit interaction in multiple quantum wells

    SciTech Connect

    Hao, Ya-Fei

    2015-01-07

    In this paper, we investigate how the structure of multiple quantum wells affects spin-orbit interactions. To increase the interface-related Rashba spin splitting and the strength of the interface-related Rashba spin-orbit interaction, we designed three kinds of multiple quantum wells. We demonstrate that the structure of the multiple quantum wells strongly affected the interface-related Rashba spin-orbit interaction, increasing the interface-related Rashba spin splitting to up to 26% larger in multiple quantum wells than in a stepped quantum well. We also show that the cubic Dresselhaus spin-orbit interaction similarly influenced the spin relaxation time of multiple quantum wells and that of a stepped quantum well. The increase in the interface-related Rashba spin splitting originates from the relationship between interface-related Rashba spin splitting and electron probability density. Our results suggest that multiple quantum wells can be good candidates for spintronic devices.

  14. Conversion of type of quantum well structure

    NASA Technical Reports Server (NTRS)

    Ning, Cun-Zheng (Inventor)

    2007-01-01

    A method for converting a Type 2 quantum well semiconductor material to a Type 1 material. A second layer of undoped material is placed between first and third layers of selectively doped material, which are separated from the second layer by undoped layers having small widths. Doping profiles are chosen so that a first electrical potential increment across a first layer-second layer interface is equal to a first selected value and/or a second electrical potential increment across a second layer-third layer interface is equal to a second selected value. The semiconductor structure thus produced is useful as a laser material and as an incident light detector material in various wavelength regions, such as a mid-infrared region.

  15. Conversion of Type of Quantum Well Structure

    NASA Technical Reports Server (NTRS)

    Ning, Cun-Zheng (Inventor)

    2007-01-01

    A method for converting a Type 2 quantum well semiconductor material to a Type 1 material. A second layer of undoped material is placed between first and third layers of selectively doped material, which are separated from the second layer by undoped layers having small widths. Doping profiles are chosen so that a first electrical potential increment across a first layer-second layer interface is equal to a first selected value and/or a second electrical potential increment across a second layer-third layer interface is equal to a second selected value. The semiconductor structure thus produced is useful as a laser material and as an incident light detector material in various wavelength regions, such as a mid-infrared region.

  16. Nitride based quantum well light-emitting devices having improved current injection efficiency

    DOEpatents

    Tansu, Nelson; Zhao, Hongping; Liu, Guangyu; Arif, Ronald

    2014-12-09

    A III-nitride based device provides improved current injection efficiency by reducing thermionic carrier escape at high current density. The device includes a quantum well active layer and a pair of multi-layer barrier layers arranged symmetrically about the active layer. Each multi-layer barrier layer includes an inner layer abutting the active layer; and an outer layer abutting the inner layer. The inner barrier layer has a bandgap greater than that of the outer barrier layer. Both the inner and the outer barrier layer have bandgaps greater than that of the active layer. InGaN may be employed in the active layer, AlInN, AlInGaN or AlGaN may be employed in the inner barrier layer, and GaN may be employed in the outer barrier layer. Preferably, the inner layer is thin relative to the other layers. In one embodiment the inner barrier and active layers are 15 .ANG. and 24 .ANG. thick, respectively.

  17. Intersubband optical transients in multi-quantum-well structures

    NASA Astrophysics Data System (ADS)

    Luc, F.; Rosencher, E.; Bois, Ph.

    1993-05-01

    We show that optical transients due to the intersubband photoionization of the electrons from quantum wells may be observed by inserting a multi-quantum-well structure in the space-charge layer of a Schottky diode. This method provides a direct measurement of the photoionization cross section of a quantum well. The escape probability of the photoexcited electron from the quantum well can thus be unambiguously deduced. Its variation with the electric field may be described by a simple model based on the statistical fluctuation of the quantum-well width.

  18. Enhanced carrier injection in InGaN/GaN multiple quantum wells LED with polarization-induced electron blocking barrier

    NASA Astrophysics Data System (ADS)

    Li, Chengguo; Liu, Hongfei; Chua, Soo Jin

    2016-03-01

    In this report, we designed a light emitting diode (LED) structure in which an N-polar p-GaN layer is grown on top of Ga-polar In0.1Ga0.9N/GaN quantum wells (QWs) on an n-GaN layer. Numerical simulation reveals that the large polarization field at the polarity inversion interface induces a potential barrier in the conduction band, which can block electron overflow out of the QWs. Compared with a conventional LED structure with an Al0.2Ga0.8N electron blocking layer (EBL), the proposed LED structure shows much lower electron current leakage, higher hole injection, and a significant improvement in the internal quantum efficiency (IQE). These results suggest that the polarization induced barrier (PIB) is more effective than the AlGaN EBL in suppressing electron overflow and improving hole transport in GaN-based LEDs.

  19. Transport through quantum wells and superlattices on topological insulator surfaces.

    PubMed

    Song, J-T; Li, Y-X; Sun, Q-F

    2014-05-07

    We investigate electron transmission coefficients through quantum wells and quantum superlattices on topological insulator surfaces. The quantum well or superlattice is not constituted by general electronic potential barriers but by Fermi velocity barriers which originate in the different topological insulator surfaces. It is found that electron resonant modes can be renormalized by quantum wells and more clearly by quantum superlattices. The depth and width of a quantum well and superlattice, the incident angle of an electron, and the Fermi energy can be used to effectively tune the electron resonant modes. In particular, the number N of periodic structures that constitute a superlattice can further strengthen these regulating effects. These results suggest that a device could be developed to select and regulate electron propagation modes on topological insulator surfaces. Finally, we also study the conductance and the Fano factor through quantum wells and quantum superlattices. In contrast to what has been reported before, the suppression factors of 0.4 in the conductance and 0.85 in the Fano factor are observed in a quantum well, while the transport for a quantum superlattice shows strong oscillating behavior at low energy and reaches the same saturated values as in the case of a quantum well at sufficiently large energies.

  20. An AlGaN Core-Shell Tunnel Junction Nanowire Light-Emitting Diode Operating in the Ultraviolet-C Band.

    PubMed

    Sadaf, S M; Zhao, S; Wu, Y; Ra, Y-H; Liu, X; Vanka, S; Mi, Z

    2017-02-08

    To date, semiconductor light emitting diodes (LEDs) operating in the deep ultraviolet (UV) spectral range exhibit very low efficiency due to the presence of large densities of defects and extremely inefficient p-type conduction of conventional AlGaN quantum well heterostructures. We have demonstrated that such critical issues can be potentially addressed by using nearly defect-free AlGaN tunnel junction core-shell nanowire heterostructures. The core-shell nanowire arrays exhibit high photoluminescence efficiency (∼80%) in the UV-C band at room temperature. With the incorporation of an epitaxial Al tunnel junction, the p-(Al)GaN contact-free nanowire deep UV LEDs showed nearly one order of magnitude reduction in the device resistance, compared to the conventional nanowire p-i-n device. The unpackaged Al tunnel junction deep UV LEDs exhibit an output power >8 mW and a peak external quantum efficiency ∼0.4%, which are nearly one to two orders of magnitude higher than previously reported AlGaN nanowire devices. Detailed studies further suggest that the maximum achievable efficiency is limited by electron overflow and poor light extraction efficiency due to the TM polarized emission.

  1. Guiding effect of quantum wells in semiconductor lasers

    SciTech Connect

    Aleshkin, V Ya; Dikareva, Natalia V; Dubinov, A A; Zvonkov, B N; Karzanova, Maria V; Kudryavtsev, K E; Nekorkin, S M; Yablonskii, A N

    2013-05-31

    The guiding effect of InGaAs quantum wells in GaAs- and InP-based semiconductor lasers has been studied theoretically and experimentally. The results demonstrate that such waveguides can be effectively used in laser structures with a large refractive index difference between the quantum well material and semiconductor matrix and a large number of quantum wells (e.g. in InP-based structures). (semiconductor lasers. physics and technology)

  2. Tunable Bandwidth Quantum Well Infrared Photo Detector (TB-QWIP)

    DTIC Science & Technology

    2003-12-01

    conduction band called the band gap of the material. In a semiconductor the band gap is the minimum energy necessary for an electron to transfer from the...the optical energy from a heated object, instead of relying directly on the transfer of heat energy (like thermal detectors do). A quantum well can...to achieve electronically tunable bandwidth quantum well infrared photo detectors (Choi K. K. 1), or tunable bandwidth quantum dot infrared photo

  3. Screening effects and Friedel oscillations in quantum-well nanostructures

    SciTech Connect

    Kovalev, V. M.; Chaplik, A. V.

    2008-11-15

    The screening of the Coulomb interaction is studied with regard to Friedel oscillations in multicomponent electron plasma structure. A double quantum well (QW) and a superlattice are considered. The groundstate energy of a donor (exciton) in a double quantum well is calculated by a variational method as a function of the population of subbands.

  4. Optical Two-Dimensional Spectroscopy of Disordered Semiconductor Quantum Wells and Quantum Dots

    SciTech Connect

    Cundiff, Steven T.

    2016-05-03

    This final report describes the activities undertaken under grant "Optical Two-Dimensional Spectroscopy of Disordered Semiconductor Quantum Wells and Quantum Dots". The goal of this program was to implement optical 2-dimensional Fourier transform spectroscopy and apply it to electronic excitations, including excitons, in semiconductors. Specifically of interest are quantum wells that exhibit disorder due to well width fluctuations and quantum dots. In both cases, 2-D spectroscopy will provide information regarding coupling among excitonic localization sites.

  5. Photogalvanic Effects in HgTe Quantum Wells

    NASA Astrophysics Data System (ADS)

    Wittmann, B.; Danilov, S. N.; Kwon, Z. D.; Mikhailov, N. N.; Dvoretsky, S. A.; Ravash, R.; Prettl, W.; Ganichev, S. D.

    We report on the observation of the terahertz radiation induced circular (CPGE) and linear (LPGE) photogalvanic effects in HgTe quantum wells. The current response is well described by the phenomenological theory of CPGE and LPGE.

  6. Quantum confined Stark effect in Gaussian quantum wells: A tight-binding study

    SciTech Connect

    Ramírez-Morales, A.; Martínez-Orozco, J. C.; Rodríguez-Vargas, I.

    2014-05-15

    The main characteristics of the quantum confined Stark effect (QCSE) are studied theoretically in quantum wells of Gaussian profile. The semi-empirical tight-binding model and the Green function formalism are applied in the numerical calculations. A comparison of the QCSE in quantum wells with different kinds of confining potential is presented.

  7. Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

    SciTech Connect

    Lekhal, K.; Damilano, B. De Mierry, P.; Vennéguès, P.; Ngo, H. T.; Rosales, D.; Gil, B.; Hussain, S.

    2015-04-06

    Yellow/amber (570–600 nm) emitting In{sub x}Ga{sub 1−x}N/Al{sub y}Ga{sub 1−y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1−x}N QWs by the Al{sub y}Ga{sub 1−y}N layers, respectively.

  8. Polaron mass of charge carriers in semiconductor quantum wells

    SciTech Connect

    Maslov, A. Yu. Proshina, O. V.

    2015-10-15

    A theory of the interaction of charge carriers with optical phonons in a quantum well is developed with consideration for interface optical phonons. The dependence of the polaron effective mass on the quantum-well dimensions and dielectric characteristics of barriers is analyzed in detail. It is shown that, in narrow quantum wells, a quasi-two-dimensional polaron can be formed. In this case, however, the interaction parameters are defined by the charge-carrier effective mass in the quantum well and by the frequencies of interface optical phonons. If barriers are made of a nonpolar material, the polaron effective mass depends on the quantum-well width. As the quantum-well width is increased, a new mechanism of enhancement of the electron–phonon interaction develops. The mechanism is implemented, if the optical phonon energy is equal to the energy of one of the electronic transitions. This condition yields an unsteady dependence of the polaron effective mass on the quantum-well width.

  9. Students' Conceptual Difficulties in Quantum Mechanics: Potential Well Problems

    ERIC Educational Resources Information Center

    Ozcan, Ozgur; Didis, Nilufer; Tasar, Mehmet Fatih

    2009-01-01

    In this study, students' conceptual difficulties about some basic concepts in quantum mechanics like one-dimensional potential well problems and probability density of tunneling particles were identified. For this aim, a multiple choice instrument named Quantum Mechanics Conceptual Test has been developed by one of the researchers of this study…

  10. Ultrashort Pulse Interaction with Intersubband Transitions of Semiconductor Quantum Wells

    NASA Astrophysics Data System (ADS)

    Katsantonis, Ioannis; Stathatos, Elias; Paspalakis, Emmanuel

    2015-09-01

    We study coherent ultrashort pulse propagation in a two-subband system in a symmetric semiconductor quantum well structure, performing calculations beyond the rotating wave approximation and the slowly varying envelope approximation and taking into account the effects of electron-electron interactions. The interaction of the quantum well structure with the electromagnetic fields is studied with modified, nonlinear, Bloch equations. These equations are combined with the full-wave Maxwell equations for the study of pulse propagation. We present results for the pulse propagation and the population inversion dynamics in the quantum well structure for different electron sheet densities.

  11. Determination of gain in AlGaN cladding free nitride laser diodes

    SciTech Connect

    Muziol, G.; Turski, H.; Wolny, P.

    2013-08-05

    The optical gain spectra of InGaN-based multiple-quantum-well (MQW) laser diodes (LDs) grown by plasma-assisted molecular beam epitaxy are compared for different emission wavelengths. Two AlGaN cladding free LDs with similar epitaxial structures but with different In compositions in MQW were grown to study the dependence of material gain on lasing wavelength. As the emission wavelength increased from 432 to 458 nm, the differential modal gain decreased from 5.7 to 4.7 cm/kA, and the optical losses increased from 40 to 46 cm{sup −1} resulting in an increase in threshold current density. This dependence is attributed to lower optical mode confinement of LD emitting at longer wavelength. We found a strong decrease of confinement factor with increasing wavelength.

  12. Piezo-Phototronic Effect in a Quantum Well Structure.

    PubMed

    Huang, Xin; Du, Chunhua; Zhou, Yongli; Jiang, Chunyan; Pu, Xiong; Liu, Wei; Hu, Weiguo; Chen, Hong; Wang, Zhong Lin

    2016-05-24

    With enhancements in the performance of optoelectronic devices, the field of piezo-phototronics has attracted much attention, and several theoretical works have been reported based on semiclassical models. At present, the feature size of optoelectronic devices are rapidly shrinking toward several tens of nanometers, which results in the quantum confinement effect. Starting from the basic piezoelectricity equation, Schrödinger equation, Poisson equation, and Fermi's golden rule, a self-consistent theoretical model is proposed to study the piezo-phototronic effect in the framework of perturbation theory in quantum mechanics. The validity and universality of this model are well-proven with photoluminescence measurements in a single GaN/InGaN quantum well and multiple GaN/InGaN quantum wells. This study provides important insight into the working principle of nanoscale piezo-phototronic devices as well as guidance for the future device design.

  13. GaAs/InAs Multi Quantum Well Solar Cell

    DTIC Science & Technology

    2012-12-01

    4. TITLE AND SUBTITLE GaAs /InAs MULTI QUANTUM WELL SOLAR CELL 5. FUNDING NUMBERS 6. AUTHOR(S) Evangelos Koletsios 7. PERFORMING ORGANIZATION NAME... GaAs /InAs MULTI QUANTUM WELL SOLAR CELL Evangelos Koletsios Lieutenant, Hellenic Navy B.S., Hellenic Naval Academy, 2001 Submitted in...similar, such as a GaAs crystal, which is mainly used in solar cells and it is described as a direct bandgap semiconductor. On the other hand, for

  14. Effect of Multiple Scattering in a Quantum Well

    NASA Astrophysics Data System (ADS)

    Sheng, Hanyu; Chua, Soo-Jin; Sinkkonen, Juha

    This paper gives a potentially useful application to quantum well of the theory of scattering in the Born approximation. The simple formulae for multiple scattering in a quantum well of double barrier structure are derived. The multiple scattering parameter is the complex mean free path. We show that the amplitude of the coherent wave will be exponentially attenuated and the phase of the wave will be delayed because of the scattering.

  15. Effects of Electric Fields on Quantum Well Intersubband Transitions

    NASA Astrophysics Data System (ADS)

    Harwit, Alex

    A new technique is described to calculate the exact eigenstates of a quantum well superlattice of Gallium Arsenide/Aluminum Gallium Arsenide (GaAs/AlGaAs) in a perpendicular electric field. In the model the sloping potential of the conduction band is approximated by a series of small steps. Plane wave states are propagated across the quantum well structure and the quasi-eigenstates and quasi-eigenenergies are found at the transmission resonances of the system. We have used the technique to quantify the tunability of a new infrared modulator utilizing an intra-conduction band transition in the quantum well. Two such quantum well samples were grown by Molecular Beam Epitaxy (MBE). They consisted of 92 and 110 Angstrom GaAs quantum wells separated by AlGaAs barriers. Under the application of a perpendicular electric field, shifts were observed in the quantum well intersubband absorption energies, in good agreement with theoretical calculations. These tunable transitions can be applied to far infrared light modulators.

  16. Modeling and Simulation of Semiconductor Quantum Well Structures and Lasers

    NASA Technical Reports Server (NTRS)

    Ning, Cun-Zheng; Saini, Subbash (Technical Monitor)

    1998-01-01

    In this talk I will cover two aspects of modeling and simulation efforts at NASA Ames Research Center. In the quantum well structure simulation, we typically start from the quantum mechanical calculation of the quantum well structures for the confined/and unconfined eigen states and functions. A bandstructure calculation of the k*p type is then performed for the confined valence states. This information is then used to computer the optical gain and refractive index of the quantum well structures by solving the linearized multiband semiconductor Bloch equations with the many-body interactions included. In our laser simulation, we typically solve the envelope equations for the laser field in space-time domain, coupled with a reduced set of material equations using the microscopic calculation of the first step. Finally I will show some examples of both aspects of simulation and modeling.

  17. Physics and polarization characteristics of 298 nm AlN-delta-GaN quantum well ultraviolet light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Liu, Cheng; Ooi, Yu Kee; Islam, S. M.; Verma, Jai; Xing, Huili Grace; Jena, Debdeep; Zhang, Jing

    2017-02-01

    This work investigates the physics and polarization characteristics of 298 nm AlN-delta-GaN quantum well (QW) ultraviolet (UV) light-emitting diodes (LEDs). The physics analysis shows that the use of the AlN-delta-GaN QW structure can ensure dominant conduction band (C) to heavy-hole (HH) subband transition and significantly improve the electron and top HH subband wave function overlap. As a result, up to 30-times enhancement in the transverse-electric (TE)-polarized spontaneous emission rate of the proposed structure can be obtained as compared to a conventional AlGaN QW structure. The polarization properties of molecular beam epitaxy-grown AlN/GaN QW-like UV LEDs, which consist of 3-4 monolayer (QW-like) delta-GaN layers sandwiched by 2.5-nm AlN sub-QW layers, are investigated in this study. The polarization-dependent electroluminescence measurement results are consistent with the theoretical analysis. Specifically, the TE-polarized emission intensity is measured to be much larger than the transverse-magnetic emission, indicating significant potential for our proposed QW structure for high-efficiency TE-polarized mid-UV LEDs.

  18. Photonic quantum well composed of photonic crystal and quasicrystal

    NASA Astrophysics Data System (ADS)

    Xu, Shaohui; Zhu, Yiping; Wang, Lianwei; Yang, Pingxiong; Chu, Paul K.

    2014-02-01

    A photonic quantum well structure composed of photonic crystal and Fibonacci quasicrystal is investigated by analyzing the transmission spectra and electric field distributions. The defect band in the photonic well can form confined quantized photonic states that can change in the band-gap of the photonic barriers by varying the thickness ratio of the two stacking layers. The number of confined states can be tuned by adjusting the period of the photonic well. The photons traverse the photonic quantum well by resonance tunneling and the coupling effect leads to the high transmission intensity of the confined photonic states.

  19. Quantum well in a microcavity with injected squeezed vacuum

    SciTech Connect

    Erenso, Daniel; Vyas, Reeta; Singh, Surendra

    2003-01-01

    A quantum well with a single exciton mode in a microcavity driven by squeezed vacuum is studied in the low exciton density regime. By solving the quantum Langevin equations, we study the intensity, spectrum, and intensity correlation function for the fluorescent light. An expression for the Q function of the field inside the cavity is derived from the solutions of the quantum Langevin equations. Using the Q function, the intracavity photon number distribution and the quadrature fluctuations for both the cavity and fluorescent fields are studied. Several interesting and new effects due to squeezed vacuum are found.

  20. Controlled interaction of surface quantum-well electronic states.

    PubMed

    Seufert, Knud; Auwärter, Willi; García de Abajo, F J; Ecija, David; Vijayaraghavan, Saranyan; Joshi, Sushobhan; Barth, Johannes V

    2013-01-01

    We report on the construction of well-defined surface quantum well arrangements by combining self-assembly protocols and molecular manipulation procedures. After the controlled removal of individual porphyrin molecules from dense-packed arrays on Ag(111), the surface state electrons are confined at the bare silver patches. These act as quantum wells that show well-defined unoccupied bound surface states. Scanning tunneling spectroscopy and complementary boundary element method calculations are performed to characterize the interaction between the bound states of adjacent quantum wells and reveal a hybridization of wave functions resulting in bonding and antibonding states. The interwell coupling can be tuned by the deliberate choice of the molecules acting as potential barriers. The fabrication method is shown to be ideally suited to engineer specific configurations as one-dimensional chains or two-dimensional artificial molecules.

  1. Low-cost DH and quantum well laser array development

    NASA Technical Reports Server (NTRS)

    Linden, Kurt J.; Geoffroy, Leo M.; Pesarcik, Scott F.; Magee, Carl J.

    1989-01-01

    The intial results of a program aimed at developing low-cost diode laser arrays for use as solid-state laser pumps are reported. MOCVD is used to demonstrate excellent run-to-run reproducibility in emission wavelength, threshold current density, and quantum efficiency. For this first experimental series, J(th) values of approximately 1310 Amps/sq cm were obtained for broad-area unthinned devices from the growth runs. Differential quantum efficiencies of between 41 percent and 47 percent were measured on the non-facet-coated devices from all four runs. Single quantum well, separate confinement heterostructure lasers fabricated from wafers grown in the same MOCVD reactor exhibited near single-mode emission, with J(th) values of approximately 300 Amps/sq cm. Photoluminescence data confirm quantum well widths of 80 A and 150 A for two different MOCVD growth runs.

  2. Dot-in-Well Quantum-Dot Infrared Photodetectors

    NASA Technical Reports Server (NTRS)

    Gunapala, Sarath; Bandara, Sumith; Ting, David; Hill, cory; Liu, John; Mumolo, Jason; Chang, Yia Chung

    2008-01-01

    Dot-in-well (DWELL) quantum-dot infrared photodetectors (QDIPs) [DWELL-QDIPs] are subjects of research as potentially superior alternatives to prior QDIPs. Heretofore, there has not existed a reliable method for fabricating quantum dots (QDs) having precise, repeatable dimensions. This lack has constituted an obstacle to the development of uniform, high-performance, wavelength-tailorable QDIPs and of focal-plane arrays (FPAs) of such QDIPs. However, techniques for fabricating quantum-well infrared photodetectors (QWIPs) having multiple-quantum- well (MQW) structures are now well established. In the present research on DWELL-QDIPs, the arts of fabrication of QDs and QWIPs are combined with a view toward overcoming the deficiencies of prior QDIPs. The longer-term goal is to develop focal-plane arrays of radiationhard, highly uniform arrays of QDIPs that would exhibit high performance at wavelengths from 8 to 15 m when operated at temperatures between 150 and 200 K. Increasing quantum efficiency is the key to the development of competitive QDIP-based FPAs. Quantum efficiency can be increased by increasing the density of QDs and by enhancing infrared absorption in QD-containing material. QDIPs demonstrated thus far have consisted, variously, of InAs islands on GaAs or InAs islands in InGaAs/GaAs wells. These QDIPs have exhibited low quantum efficiencies because the numbers of QD layers (and, hence, the areal densities of QDs) have been small typically five layers in each QDIP. The number of QD layers in such a device must be thus limited to prevent the aggregation of strain in the InAs/InGaAs/GaAs non-lattice- matched material system. The approach being followed in the DWELL-QDIP research is to embed In- GaAs QDs in GaAs/AlGaAs multi-quantum- well (MQW) structures (see figure). This material system can accommodate a large number of QD layers without excessive lattice-mismatch strain and the associated degradation of photodetection properties. Hence, this material

  3. Quantum beats in conductance oscillations in graphene-based asymmetric double velocity wells and electrostatic wells

    SciTech Connect

    Liu, Lei; Li, Yu-Xian; Zhang, Ying-Tao; Liu, Jian-Jun

    2014-01-14

    The transport properties in graphene-based asymmetric double velocity well (Fermi velocity inside the well less than that outside the well) and electrostatic well structures are investigated using the transfer matrix method. The results show that quantum beats occur in the oscillations of the conductance for asymmetric double velocity wells. The beating effect can also be found in asymmetric double electrostatic wells, but only if the widths of the two wells are different. The beat frequency for the asymmetric double well is exactly equal to the frequency difference between the oscillation rates in two isolated single wells with the same structures as the individual wells in the double well structure. A qualitative interpretation is proposed based on the fact that the resonant levels depend upon the sizes of the quantum wells. The beating behavior can provide a new way to identify the symmetry of double well structures.

  4. Blue single photon emission up to 200 K from an InGaN quantum dot in AlGaN nanowire

    NASA Astrophysics Data System (ADS)

    Deshpande, Saniya; Das, Ayan; Bhattacharya, Pallab

    2013-04-01

    We demonstrate polarized blue single photon emission up to 200 K from an In0.2Ga0.8N quantum dot in a single Al0.1Ga0.9N nanowire. The InGaN/AlGaN dot-in-nanowire heterostructure was grown on (111) silicon by plasma assisted molecular beam epitaxy. Nanowires dispersed on a silicon substrate show sharp exciton and biexciton transitions in the micro-photoluminescence spectra. Second-order correlation measurements performed under pulsed excitation at the biexciton wavelength confirm single photon emission, with a g(2)(0) of 0.43 at 200 K. The emitted photons have a short radiative lifetime of 0.7 ns and are linearly polarized along the c-axis of the nanowire with a degree of polarization of 78%.

  5. Fundamental limits to performance of quantum well infrared detectors

    NASA Technical Reports Server (NTRS)

    Yariv, Amnon; Kinch, Michael; Borenstain, S.; Grave, I.

    1990-01-01

    Radiometric, density of states (material), and thermal considerations are used to obtain the figure of merit of the quantum-well GaAs/GaAlAs infrared detectors described by Smith et. al. The results are compared with HgCdTe, the present industry standard, as well as with recent experiments at other laboratories.

  6. Relaxation of hot excitons in CdZnSe/ZnSe quantum wells and quantum dots

    NASA Astrophysics Data System (ADS)

    Spiegel, R.; Bacher, G.; Breitwieser, O.; Forchel, A.; Jobst, B.; Hommel, D.; Landwehr, G.

    1998-05-01

    The relaxation dynamics of hot excitons was studied in (Zn,Cd)Se/ZnSe quantum wells and quantum dots. A fast population of the radiative excitonic ground state occurs for an excitation excess energy corresponding to an integer number of optical phonon energies. This is indicated by a spectrally narrow photoluminescence peak observed immediately after the exciting laser pulse. Spatial diffusion of excitons, controlled by the interaction between excitons and acoustic phonons, causes a distinct linewidth broadening with increasing delay time in quantum wells. In contrast, this process is found to be strongly suppressed in quantum dots.

  7. Wavefunction Engineering of Spintronic devices in ZnO/MgO and GaN/AlN Quantum Structures Doped with Transition Metal Ions

    DTIC Science & Technology

    2006-08-01

    modeling terahertz lasers in the wurtzite materials such as ZnO/MgZnO (or even in GaN /AlGaN quantum well structures) when we ’L. R. Ram-Mohan, "Finite...06 4. TITLE AND SUBTITLE 5a. CONTRACT NUMBER Wavefunction Engineering of Spintronic Devices in ZnO/MgO & GaN /AIN Quantum Structures Doped with...wurtzite heterostructures of ZnO/MgZnO and GaN /AlGaN systems grown on R-plane sapphire. The FEM approach gives wavefunctions and allows device modeling

  8. Anisotropic transport in modulation doped quantum well structures

    NASA Technical Reports Server (NTRS)

    Radulescu, D. C.; Wicks, G. W.; Schaff, W. J.; Calawa, A. R.; Eastman, L. F.

    1987-01-01

    The degree of anisotropy in the anisotropic electron transport that has been observed in GaAs modulation-doped quantum wells grown by MBE on Al(0.3)Ga(0.7)As is related to the thickness and growth parameters of this substrate, which is grown just prior to the inverted interface. It is presently observed that the inverted interface has an anisotropic roughness which affects the 77 K low field electron transport parallel to the interface, and gives rise to anisotropic electron scattering in the GaAs modulation-doped quantum well.

  9. Microscopic Theory and Simulation of Quantum-Well Intersubband Absorption

    NASA Technical Reports Server (NTRS)

    Li, Jianzhong; Ning, C. Z.

    2004-01-01

    We study the linear intersubband absorption spectra of a 15 nm InAs quantum well using the intersubband semiconductor Bloch equations with a three-subband model and a constant dephasing rate. We demonstrate the evolution of intersubband absorption spectral line shape as a function of temperature and electron density. Through a detailed examination of various contributions, such as the phase space filling effects, the Coulomb many-body effects and the non-parabolicity effect, we illuminate the underlying physics that shapes the spectra. Keywords: Intersubband transition, linear absorption, semiconductor heterostructure, InAs quantum well

  10. Detection of electromagnetic radiation using micromechanical multiple quantum wells structures

    DOEpatents

    Datskos, Panagiotis G [Knoxville, TN; Rajic, Slobodan [Knoxville, TN; Datskou, Irene [Knoxville, TN

    2007-07-17

    An apparatus and method for detecting electromagnetic radiation employs a deflectable micromechanical apparatus incorporating multiple quantum wells structures. When photons strike the quantum-well structure, physical stresses are created within the sensor, similar to a "bimetallic effect." The stresses cause the sensor to bend. The extent of deflection of the sensor can be measured through any of a variety of conventional means to provide a measurement of the photons striking the sensor. A large number of such sensors can be arranged in a two-dimensional array to provide imaging capability.

  11. Superradiant modes in Fibonacci quantum wells under resonant conditions

    NASA Astrophysics Data System (ADS)

    Chang, C. H.; Tsao, C. W.; Hsueh, W. J.

    2014-11-01

    It is first presented that superradiant modes exist in Fibonacci quantum wells within the exact regions that are obtained using the gap map diagram, rather than the traditional resonant Bragg condition. The results show that three limited regions are derived from the diagram, which correspond to bandgaps with widths that differ from each other. The regions in which the superradiant modes do not occur are also defined clearly. Moreover, the proposed method can be used to determine whether superradiant modes occur in multiple quantum wells that have non-periodical arrangements, including quasiperiodic sequences and correlated disorder sequences.

  12. High-speed solar-blind UV photodetectors using high-Al content Al0.64Ga0.36N/Al0.34Ga0.66N multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Muhtadi, Sakib; Hwang, Seong Mo; Coleman, Antwon L.; Lunev, Alexander; Asif, Fatima; Chava, V. S. N.; Chandrashekhar, M. V. S.; Khan, Asif

    2017-01-01

    We demonstrate high-external quantum efficiency (˜50%) solar-blind AlGaN p-n junction photodetectors with high-Al content multiple quantum wells (MQWs). A peak responsivity of 0.1 A/W at 250 nm, which falls >103 by 280 nm, indicates that the optical absorption is dominated by the MQW structures. At a reverse bias of 0.5 V, the dark current is <0.1 pA. The readout RC-limited time response is measured as 0.4 µs, and an achievable detector RC-limited time response of 2 ns is estimated. The devices do not show internal gain, which accounts for their high speed.

  13. Precursors and Transition to Chaos in a Quantum Well

    NASA Astrophysics Data System (ADS)

    Boebinger, Greg

    1996-03-01

    Despite great theoretical interest, there are relatively few experimental studies of simple quantum systems whose classical counterparts exhibit chaotic dynamics. Recently, using resonant tunneling spectroscopy, Fromhold, et al. footnote T. M. Fromhold, L. Eaves, F. W. Sheard, M. L. Leadbeater, T. J. Foster, and P. C. Main, Phys. Rev. Lett. 72, 2608 (1994) have demonstrated that the wide quantum well exhibits chaotic dynamics in a sufficiently intense magnetic field which is tilted away from perpendicular to the quantum well. More recently, we have discovered a distinct transition from integrable to chaotic electron dynamics in this system. footnote G. Müller, G. S. Boebinger, H. Mathur, L. N. Pfeiffer, and K. W. West, Phys. Rev. Lett. 75, 2875 (1995) The evolution of the chaos transition is mapped systematically by varying bias voltage, magnetic field and tilt angle. As the tilt angle is increased, the system becomes increasingly chaotic. For a perpendicular magnetic field (θ = 0 ^circ), peaks in the tunneling current correspond to the quantum well subbands. At small tilt angles, (10 ^circ < θ < 30 ^circ) the resonant tunneling spectra show the quantum well subbands, but distinct peak doubling regions have emerged. At larger tilt angles, the quantum well subbands make a transition to a peak tripling region. Poincare section calculations identify these peak doubling and tripling regions as the precursors of the chaos transition. They result from the bifurcation and trifurcation of the stable periodic orbit which corresponds to the quantum well subbands. At θ = 45 ^circ, there is a sharp transition between the region of ordered, subband-like peaks at low magnetic fields and a region of disordered peak positions at higher magnetic fields. We conclude that quantum wells provide a particularly clear manifestation of the transition from order to chaos which results from the break-up of stable periodic orbits. This work is a collaboration with G. Müller, H. Mathur

  14. Optical properties of transition metal oxide quantum wells

    SciTech Connect

    Lin, Chungwei; Posadas, Agham; Choi, Miri; Demkov, Alexander A.

    2015-01-21

    Fabrication of a quantum well, a structure that confines the electron motion along one or more spatial directions, is a powerful method of controlling the electronic structure and corresponding optical response of a material. For example, semiconductor quantum wells are used to enhance optical properties of laser diodes. The ability to control the growth of transition metal oxide films to atomic precision opens an exciting opportunity of engineering quantum wells in these materials. The wide range of transition metal oxide band gaps offers unprecedented control of confinement while the strong correlation of d-electrons allows for various cooperative phenomena to come into play. Here, we combine density functional theory and tight-binding model Hamiltonian analysis to provide a simple physical picture of transition metal oxide quantum well states using a SrO/SrTiO{sub 3}/SrO heterostructure as an example. The optical properties of the well are investigated by computing the frequency-dependent dielectric functions. The effect of an external electric field, which is essential for electro-optical devices, is also considered.

  15. Optical properties of transition metal oxide quantum wells

    NASA Astrophysics Data System (ADS)

    Lin, Chungwei; Posadas, Agham; Choi, Miri; Demkov, Alexander A.

    2015-01-01

    Fabrication of a quantum well, a structure that confines the electron motion along one or more spatial directions, is a powerful method of controlling the electronic structure and corresponding optical response of a material. For example, semiconductor quantum wells are used to enhance optical properties of laser diodes. The ability to control the growth of transition metal oxide films to atomic precision opens an exciting opportunity of engineering quantum wells in these materials. The wide range of transition metal oxide band gaps offers unprecedented control of confinement while the strong correlation of d-electrons allows for various cooperative phenomena to come into play. Here, we combine density functional theory and tight-binding model Hamiltonian analysis to provide a simple physical picture of transition metal oxide quantum well states using a SrO/SrTiO3/SrO heterostructure as an example. The optical properties of the well are investigated by computing the frequency-dependent dielectric functions. The effect of an external electric field, which is essential for electro-optical devices, is also considered.

  16. GaN/AlN Quantum Wells and Quantum Dots for Unipolar Devices at Telecommunication Wavelengths

    SciTech Connect

    Julien, Francois H.; Tchernycheva, Maria; Doyennette, Laetitia; Nevou, Laurent; Lupu, Anatole; Warde, Elias; Guillot, Fabien; Monroy, Eva; Bellet-Amalric, Edith

    2007-04-10

    We report on the latest achievements in terms of growth and optical investigation of ultrathin GaN/AlN isolated and coupled quantum wells grown by plasma-assisted molecular-beam epitaxy. We also present the observation of intraband absorption in self-organized GaN quantum dots and on the application to infrared photodetection at telecommunication wavelengths.

  17. Design and Analysis of a Quantum Well Light Emitting Triode.

    NASA Astrophysics Data System (ADS)

    Rajagopalan, Bharath

    1992-01-01

    We present, for the first time, the design and analysis of a novel, quantum well light emitting triode (QWLET), based on a bipolar junction transistor with a quantum well in the base. Modulation of the collector -base voltage controls the radiation emission from the quantum well by sweeping the space-charge region across the well. Detailed analysis is provided for an npn-Al_{.35 }Ga_{.65}As transistor with an undoped GaAs quantum well. Calculations indicate that modulation rates in excess of 1 GHz are possible. The switching-off process is limited by thermionic emission of majority carriers out of the well, whereas the turn -on is controlled by the recombination lifetime in the well. Our calculations reveal that the thermionic emission lifetime of these carriers is ~0.1 ns at an applied field of 5 times 10 ^4 V/cm, while the radiative lifetime is approximately 1-2 ns for carrier densities in excess of 10^{12} cm ^{-2} in the well. For material systems, or choice of parameters, where thermionic emission is insignificant, field induced tunneling of carriers out of the well is considered as a quenching mechanism. However, the tunneling lifetime is ~3.1 mus at a field of 1 times 10^5 V/cm, and therefore we propose a novel scheme to reduce this lifetime to ~3.3 ns through impurity assisted tunneling. Our calculated results also include a capture cross-section of 10^{-14} cm ^2 for carriers into the well, a B coefficient for radiative recombination of 2.4 times 10^{-10} cm ^3/s, and optical power generation of 0.15 muW per μm of length per mA of drive current and peaked at 855 nm. The voltage amplitude needed to modulate the radiation is on the order of 1 to 2 volts.

  18. AlSb/InAs/AlSb quantum wells

    NASA Technical Reports Server (NTRS)

    Kroemer, Herbert

    1990-01-01

    Researchers studied the InAs/AlSb system recently, obtaining 12nm wide quantum wells with room temperature mobilities up to 28,000 cm(exp 2)/V center dot S and low-temperature mobilities up to 325,000 cm(exp 2)/V center dot S, both at high electron sheet concentrations in the 10(exp 12)/cm(exp 2) range (corresponding to volume concentrations in the 10(exp 18)/cm(exp 2) range). These wells were not intentionally doped; the combination of high carrier concentrations and high mobilities suggest that the electrons are due to not-intentional modulation doping by an unknown donor in the AlSb barriers, presumably a stoichiometric defect, like an antisite donor. Inasmuch as not intentionally doped bulk AlSb is semi-insulating, the donor must be a deep one, being ionized only by draining into the even deeper InAs quantum well. The excellent transport properties are confirmed by other observations, like excellent quantum Hall effect data, and the successful use of the quantum wells as superconductive weak links between Nb electrodes, with unprecendentedly high critical current densities. The system is promising for future field effect transistors (FETs), but many processing problems must first be solved. Although the researchers have achieved FETs, the results so far have not been competitive with GaAs FETs.

  19. Anisotropic transport in modulation-doped quantum-well structures

    NASA Technical Reports Server (NTRS)

    Radulescu, D. C.; Wicks, G. W.; Schaff, W. J.; Calawa, A.R.; Eastman, L. F.

    1987-01-01

    Anisotropic electron transport has been observed in GaAs modulation-doped quantum wells grown by molecular-beam epitaxy on a thick (001) Al(0.3)Ga(0.7)As buffer grown at 620 C. Thicker quantum wells (150, 200, and 300 A) show progressively less anisotropy, which vanishes for a 300-A quantum well. The degree of anisotropy is also reduced or eliminated by suspending growth of the Al(0.3)Ga(0.7)As for a period of 300 s prior to growing the GaAs quantum well. Growing the Al(0.3)Ga(0.7)As buffer at higher temperatures (680 C) also reduces the degree of anisotropy. Higher two-dimensional electron gas sheet densities result in less anisotropy.The anisotropy is eliminated by replacing the thick Al(0.3)Ga(0.7)As buffer with a periodic multilayer structure comprising 15 A of GaAs and 200 A of Al(0.3)Ga(0.7)As. The degree of anisotropy is related to the thickness and growth parameters of the Al(0.3)Ga(0.7)As layer grown just prior to the growth of the GaAs.

  20. Multiple Quantum Wells for P T -Symmetric Phononic Crystals

    NASA Astrophysics Data System (ADS)

    Poshakinskiy, A. V.; Poddubny, A. N.; Fainstein, A.

    2016-11-01

    We demonstrate that the parity-time symmetry for sound is realized in laser-pumped multiple-quantum-well structures. Breaking of the parity-time symmetry for the phonons with wave vectors corresponding to the Bragg condition makes the structure a highly selective acoustic wave amplifier. Single-mode distributed feedback phonon lasing is predicted for structures with realistic parameters.

  1. Quantum anomalous Hall effect in magnetically doped InAs/GaSb quantum wells.

    PubMed

    Wang, Qing-Ze; Liu, Xin; Zhang, Hai-Jun; Samarth, Nitin; Zhang, Shou-Cheng; Liu, Chao-Xing

    2014-10-03

    The quantum anomalous Hall effect has recently been observed experimentally in thin films of Cr-doped (Bi,Sb)(2)Te(3) at a low temperature (∼ 30 mK). In this work, we propose realizing the quantum anomalous Hall effect in more conventional diluted magnetic semiconductors with magnetically doped InAs/GaSb type-II quantum wells. Based on a four-band model, we find an enhancement of the Curie temperature of ferromagnetism due to band edge singularities in the inverted regime of InAs/GaSb quantum wells. Below the Curie temperature, the quantum anomalous Hall effect is confirmed by the direct calculation of Hall conductance. The parameter regime for the quantum anomalous Hall phase is identified based on the eight-band Kane model. The high sample quality and strong exchange coupling make magnetically doped InAs/GaSb quantum wells good candidates for realizing the quantum anomalous Hall insulator at a high temperature.

  2. Electron transport in coupled double quantum wells and wires

    SciTech Connect

    Harff, N.E.; Simmons, J.A.; Lyo, S.K.

    1997-04-01

    Due to inter-quantum well tunneling, coupled double quantum wells (DQWs) contain an extra degree of electronic freedom in the growth direction, giving rise to new transport phenomena not found in single electron layers. This report describes work done on coupled DQWs subject to inplane magnetic fields B{sub {parallel}}, and is based on the lead author`s doctoral thesis, successfully defended at Oregon State University on March 4, 1997. First, the conductance of closely coupled DQWs in B{sub {parallel}} is studied. B{sub {parallel}}-induced distortions in the dispersion, the density of states, and the Fermi surface are described both theoretically and experimentally, with particular attention paid to the dispersion anticrossing and resulting partial energy gap. Measurements of giant distortions in the effective mass are found to agree with theoretical calculations. Second, the Landau level spectra of coupled DQWs in tilted magnetic fields is studied. The magnetoresistance oscillations show complex beating as Landau levels from the two Fermi surface components cross the Fermi level. A third set of oscillations resulting from magnetic breakdown is observed. A semiclassical calculation of the Landau level spectra is then performed, and shown to agree exceptionally well with the data. Finally, quantum wires and quantum point contacts formed in DQW structures are investigated. Anticrossings of the one-dimensional DQW dispersion curves are predicted to have interesting transport effects in these devices. Difficulties in sample fabrication have to date prevented experimental verification. However, recently developed techniques to overcome these difficulties are described.

  3. Theoretical investigation of photonic quantum wells and defects

    NASA Astrophysics Data System (ADS)

    Jiang, Yuankai

    In this dissertation, band gaps of photonic crystal slabs are calculated and single and multiple photonic quantum well systems are theoretically investigated. A comprehensive study of defects in the photonic crystal is also presented in the dissertation. The major milestones and current developments in the photonic crystal research are briefly outlined in the introduction. Four theoretical approaches most commonly applied in the photonic crystal studies are reviewed. They are the plane wave expansion method, finite difference time domain method, transfer matrix method and modal expansion with R-matrix propagation algorithm. A comparison of these theoretical methods is discussed and the R-matrix formalism is implemented in the present work. The modal expansion with R-matrix propagation algorithm is applied to calculate the band gap for two-dimensional photonic crystal slabs and the results are compared with experimental measurements and with other numerical calculations. Excellent agreement with experiments is found and the R-matrix formalism proves to be more advantageous than other approaches. These advantages include its stability, efficiency and the fact that it can deal with finite photonic crystal slabs. The effect of the finite photonic slab on the band gap is also discussed. It is demonstrated that the band gap for a photonic slab structure can be controlled by the dielectric contrast, filling factor, filling geometry, lattice structure and polarization of the electric field. A photonic quantum well structure is proposed and investigated by the R-matrix algorithm. The band gap of photonic materials with periodic spatial modulation of the refractive index greater than unity can actually be regarded as a potential barrier for photons. Similar to the semiconductor quantum well systems, a photonic quantum well can be constructed by sandwiching a uniform medium between two photonic barriers due to the photonic band gap mismatch. The transmission and reflection

  4. Quantum cascade light emitting diodes based on type-2 quantum wells

    NASA Technical Reports Server (NTRS)

    Lin, C. H.; Yang, R. Q.; Zhang, D.; Murry, S. J.; Pei, S. S.; Allerman, A. A.; Kurtz, S. R.

    1997-01-01

    The authors have demonstrated room-temperature CW operation of type-2 quantum cascade (QC) light emitting diodes at 4.2 (micro)m using InAs/InGaSb/InAlSb type-2 quantum wells. The type-2 QC configuration utilizes sequential multiple photon emissions in a staircase of coupled type-2 quantum wells. The device was grown by molecular beam epitaxy on a p-type GaSb substrate and was compared of 20 periods of active regions separated by digitally graded quantum well injection regions. The maximum average output power is about 250 (micro)W at 80 K, and 140 (micro)W at 300 K at a repetition rate of 1 kHz with a duty cycle of 50%.

  5. Quantum cascade light emitting diodes based on type-II quantum wells

    SciTech Connect

    Lin, C.H.; Yang, R.Q.; Zhang, D.; Murry, S.J.; Pei, S.S.; Allerman, A.A.; Kurtz, S.R.

    1997-01-21

    The authors have demonstrated room-temperature CW operation of type-II quantum cascade (QC) light emitting diodes at 4.2 {micro}m using InAs/InGaSb/InAlSb type-II quantum wells. The type-II QC configuration utilizes sequential multiple photon emissions in a staircase of coupled type-II quantum wells. The device was grown by molecular beam epitaxy on a p-type GaSb substrate and was compared of 20 periods of active regions separated by digitally graded quantum well injection regions. The maximum average output power is about 250 {micro}W at 80 K, and 140 {micro}W at 300 K at a repetition rate of 1 kHz with a duty cycle of 50%.

  6. Ferroelectric tunnel junctions with multi-quantum well structures

    SciTech Connect

    Ma, Zhijun; Zhang, Tianjin; Liang, Kun; Qi, Yajun; Wang, Duofa; Wang, Jinzhao; Jiang, Juan

    2014-06-02

    Ferroelectric tunnel junctions (FTJs) with multi-quantum well structures are proposed and the tunneling electroresistance (TER) effect is investigated theoretically. Compared with conventional FTJs with monolayer ferroelectric barriers, FTJs with single-well structures provide TER ratio improvements of one order of magnitude, while FTJs with optimized multi-well structures can enhance this improvement by another order of magnitude. It is believed that the increased resonant tunneling strength combined with appropriate asymmetry in these FTJs contributes to the improvement. These studies may help to fabricate FTJs with large TER ratio experimentally and put them into practice.

  7. Intersubband Transitions in InAs/AlSb Quantum Wells

    NASA Technical Reports Server (NTRS)

    Li, J.; Koloklov, K.; Ning, C. Z.; Larraber, D. C.; Khodaparast, G. A.; Kono, J.; Ueda, K.; Nakajima, Y.; Sasa, S.; Inoue, M.

    2003-01-01

    We have studied intersubband transitions in InAs/AlSb quantum wells experimentally and theoretically. Experimentally, we performed polarization-resolved infrared absorption spectroscopy to measure intersubband absorption peak frequencies and linewidths as functions of temperature (from 4 K to room temperature) and quantum well width (from a few nm to 10 nm). To understand experimental results, we performed a self-consistent 8-band k-p band-structure calculation including spatial charge separation. Based on the calculated band structure, we developed a set of density matrix equations to compute TE and TM optical transitions self-consistently, including both interband and intersubband channels. This density matrix formalism is also ideal for the inclusion of various many-body effects, which are known to be important for intersubband transitions. Detailed comparison between experimental data and theoretical simulations is presented.

  8. EPR and Ferromagnetism in Diluted Magnetic Semiconductor Quantum Wells

    NASA Astrophysics Data System (ADS)

    König, Jürgen; MacDonald, Allan H.

    2003-08-01

    Motivated by recent measurements of electron paramagnetic resonance spectra in modulation-doped CdMnTe quantum wells [

    F. J. Teran et al., Phys. Rev. Lett.PRLTAO0031-9007 91, 077201 (2003)
    ], we develop a theory of collective spin excitations in quasi-two-dimensional diluted magnetic semiconductors. Our theory explains the anomalously large Knight shift found in these experiments as a consequence of collective coupling between Mn-ion local moments and itinerant-electron spins. We use this theory to discuss the physics of ferromagnetism in (II,Mn)VI quantum wells and to speculate on the temperature at which it is likely to be observed in n-type modulation-doped systems.

  9. Anomalous capacitance of quantum well double-barrier diodes

    NASA Technical Reports Server (NTRS)

    Boric, Olga; Tolmunen, Timo J.; Kollberg, Erik; Frerking, Margaret A.

    1992-01-01

    The S-parameters of several different quantum well double barrier diodes have been measured. A technique has been developed for measuring whisker contacted diodes with an HP 8510B automatic network analyzer. Special coaxial mounts using K-connectors were designed to enable measurements up to 20 GHz. The voltage-dependent conductance and capacitance were derived from the measured reflection coefficient of each device. The C/V characteristics were observed to exhibit an anomalous increase at voltages corresponding to the negative differential resistance region (NDR). These are the first reported S-parameter measurements in the negative differential resistance region of quantum well double barrier diodes. A theory is presented that explains, in part, the observed results.

  10. Terahertz quantum well photodetectors with reflection-grating couplers

    SciTech Connect

    Zhang, R.; Fu, Z. L.; Gu, L. L.; Guo, X. G.; Cao, J. C.

    2014-12-08

    The design, fabrication, and characterization of terahertz (THz) quantum well photodetectors with one-dimensional reflection-grating coupler are presented. It is found that the reflection gratings could effectively couple the THz waves normally incident to the device. Compared with the 45-degree facet sample, the peak responsivity of this grating-coupled detector is enhanced by over 20%. The effects of the gratings on the photocurrent spectra are also analyzed.

  11. Linear and Nonlinear Spectroscopy of Quantum Well Intersubband Transitions

    NASA Astrophysics Data System (ADS)

    Yoo, Sung-Joo Ben

    An efficient nonlinear optical device requires a material with large nonlinearity, phasematching capability and transparency in the interacting frequencies. This dissertation examines the optical characteristics of intersubband transitions in quantum wells that are of special interest to nonlinear device applications. Intersubband transitions in quantum wells have large oscillator strengths and narrow linewidths, a condition that suggests large second order susceptibilities ( chi^{(2)}] in a non-centrosymmetric structure. I consider two cases: structures whose inversion symmetry is broken through external electric fields and those with compositional asymmetry. Experimental values of chi^{(2)} for second harmonic generation of tunable CO_2 laser radiation are 14 nm/V for the electric field -biased structure and 58 nm/V for the compositionally asymmetric structure. These are extremely large compared to the chi^{(2)} of other nonlinear materials, including that of bulk GaAs, which is 0.18 nm/V at similar wavelengths. Second, the chi^{(2)} can be patterned for quasi-phasematching. I demonstrate that such patterning can be achieved by alternating the polarity of the applied bias field or by proton bombarding the sample. Third, it is possible to design a quantum well structure that has reasonable transparency without much sacrifice in the optical nonlinearity. One simple method is to detune from resonance and note that the absorption decays faster than the optical nonlinearity with detuning. These three characteristics, combined with relatively mature processing techniques for semiconductor devices make possible fabrication of a high quality waveguide device where the large quantum well nonlinearity is patterned for efficient quasi-phasematching interaction. In such a device, the theoretical conversion efficiency is as high as 30% with an input power of several hundred milliwatts.

  12. Advanced semiconductor quantum well devices for infrared applications

    NASA Astrophysics Data System (ADS)

    Kuznetsov, Vladimir V.

    High performance mid-wavelength infrared (MWIR) light emitting diodes (LEDs) are needed for chemical sensing, analysis and medical imaging. Efficient long wavelength infrared (LWIR) photodetectors are highly desirable for remote sensing and space exploration. The goal of this work is to investigate new mid-infrared LEDs and to optimize existing LWIR quantum well infrared photodetectors (QWIPs). Type-II "W" InAs/InGaSb/AlGaAsSb quantum wells were incorporated as optically active layers in MWIR LEDs. Influence of MBE crystal growth conditions on the density of Shockley-Read-Hall centers in the "W" quantum wells was studied and the optimal growth conditions were identified. A qualitative physical model was developed to describe relative importance of the radiative and non-radiative processes for various temperature ranges. MWIR LED structures lattice-matched to InAs and GaSb substrates were grown. Devices on InAs substrates were found to be at least twice as efficient as devices grown on GaSb. LEDs on InAs had 4.5 mum emission wavelength and 26.5 muW/A external efficiency. Possibility to operate GaAs/AIGaAs QWIP under normal-to-surface light incidence was studied. Metal nano-particle surface coating was developed and processes responsible for, light coupling into the QWIP were investigated. QWIP structure itself was optimized to eliminate Si-diffusion-assisted dark current enhancement by employing a new doping profile in the quantum wells. Devices with the new doping profile had an order of magnitude lower dark current and 20% higher photoresponse than commercially available QWIPs.

  13. Electron scattering and mobility in a quantum well heterolayer

    NASA Astrophysics Data System (ADS)

    Arora, Vijay K.; Naeem, Athar

    1984-11-01

    The theory of electron-lattice scattering is analyzed for a quantum-well heterolayer under the conditions that the de Broglie wavelength of an electron is comparable to or larger than the width of the layer, and donor impurities are removed in an adjacent nonconducting layer. The mobility due to isotropic scattering by acoustic phonons, point defects, and alloy scattering is found to increase whereas that due to polar-optic phon scattering is found to decrease with increasing thickness.

  14. Millimeter-Wave Quantum-Well Frequency Multipliers

    NASA Technical Reports Server (NTRS)

    Batelaan, Paul D.; Frerking, Margaret A.

    1990-01-01

    Double-barrier quantum-well GaAs diode achieved 0.61 percent efficiency as frequency tripler when operated at input frequency of 63.7 GHz, nearly one-tenth cutoff frequency of diode. Efficiency increased with drive level up to maximum input power available, 40 mW. Diodes studied for use in local-oscillator chains in microwave radiometers. Potential applications include spectrometers and radar.

  15. Temperature independent quantum well FET with delta channel doping

    NASA Technical Reports Server (NTRS)

    Young, P. G.; Mena, R. A.; Alterovitz, S. A.; Schacham, S. E.; Haugland, E. J.

    1992-01-01

    A temperature independent device is presented which uses a quantum well structure and delta doping within the channel. The device requires a high delta doping concentration within the channel to achieve a constant Hall mobility and carrier concentration across the temperature range 300-1.4 K. Transistors were RF tested using on-wafer probing and a constant G sub max and F sub max were measured over the temperature range 300-70 K.

  16. A real-time spectrum acquisition system design based on quantum dots-quantum well detector

    NASA Astrophysics Data System (ADS)

    Zhang, S. H.; Guo, F. M.

    2016-01-01

    In this paper, we studied the structure characteristics of quantum dots-quantum well photodetector with response wavelength range from 400 nm to 1000 nm. It has the characteristics of high sensitivity, low dark current and the high conductance gain. According to the properties of the quantum dots-quantum well photodetectors, we designed a new type of capacitive transimpedence amplifier (CTIA) readout circuit structure with the advantages of adjustable gain, wide bandwidth and high driving ability. We have implemented the chip packaging between CTIA-CDS structure readout circuit and quantum dots detector and tested the readout response characteristics. According to the timing signals requirements of our readout circuit, we designed a real-time spectral data acquisition system based on FPGA and ARM. Parallel processing mode of programmable devices makes the system has high sensitivity and high transmission rate. In addition, we realized blind pixel compensation and smoothing filter algorithm processing to the real time spectrum data by using C++. Through the fluorescence spectrum measurement of carbon quantum dots and the signal acquisition system and computer software system to realize the collection of the spectrum signal processing and analysis, we verified the excellent characteristics of detector. It meets the design requirements of quantum dot spectrum acquisition system with the characteristics of short integration time, real-time and portability.

  17. Quantum phase transition of electron-hole liquid in coupled quantum wells

    NASA Astrophysics Data System (ADS)

    Babichenko, V. S.; Polishchuk, I. Ya.

    2016-10-01

    Many-component electron-hole plasma is considered in the coupled quantum wells. The electrons are assumed to be localized in one quantum well (QW) while the holes are localized in the other QW. It is found that the homogeneous charge distribution within the QWs is unstable if the carrier density is sufficiently small. The instability results in the breakdown of the homogeneous charge distribution into two coexisting phases—a low-density phase and a high-density phase, which is electron-hole liquid. In turn, the homogeneous state of the electron-hole liquid is stable if the distance between the quantum wells ℓ is sufficiently small. However, as the distance ℓ increases and reaches a certain critical value ℓcr, the plasmon spectrum of the electron-hole liquid becomes unstable. Hereupon, a quantum phase transition occurs, resulting in the appearance of charge-density waves of finite amplitude in both quantum wells. Strong mass renormalization and the strong Z -factor renormalization are found for the electron-hole liquid as the quantum phase transition occurs.

  18. Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

    SciTech Connect

    Guo, Wei Bryan, Zachary; Kirste, Ronny; Bryan, Isaac; Hussey, Lindsay; Bobea, Milena; Haidet, Brian; Collazo, Ramón; Sitar, Zlatko; Xie, Jinqiao; Mita, Seiji; Gerhold, Michael

    2014-03-14

    Optical gain spectra for ∼250 nm stimulated emission were compared in three different AlGaN-based structures grown on single crystalline AlN substrates: a single AlGaN film, a double heterostructure (DH), and a Multiple Quantum Well (MQW) structure; respective threshold pumping power densities of 700, 250, and 150 kW/cm{sup 2} were observed. Above threshold, the emission was transverse-electric polarized and as narrow as 1.8 nm without a cavity. The DH and MQW structures showed gain values of 50–60 cm{sup −1} when pumped at 1 MW/cm{sup 2}. The results demonstrated the excellent optical quality of the AlGaN-based heterostructures grown on AlN substrates and their potential for realizing electrically pumped sub-280 nm laser diodes.

  19. Interaction of a quantum well with squeezed light: Quantum-statistical properties

    SciTech Connect

    Sete, Eyob A.; Eleuch, H.

    2010-10-15

    We investigate the quantum statistical properties of the light emitted by a quantum well interacting with squeezed light from a degenerate subthreshold optical parametric oscillator. We obtain analytical solutions for the pertinent quantum Langevin equations in the strong-coupling and low-excitation regimes. Using these solutions we calculate the intensity spectrum, autocorrelation function, and quadrature squeezing for the fluorescent light. We show that the fluorescent light exhibits bunching and quadrature squeezing. We also show that the squeezed light leads to narrowing of the width of the spectrum of the fluorescent light.

  20. Apparent quantum number paradox in Ag quantum wells on Si(111)

    NASA Astrophysics Data System (ADS)

    Brinkley, M. K.; Speer, N. J.; Liu, Y.; Miller, T.; Chiang, T.-C.

    2011-12-01

    Angle-resolved photoemission studies of the quantum well electronic structure in atomically uniform Ag films grown on Si(111)-(7×7) reveal an anomalous bifurcation of one of the subbands as it disperses toward the Fermi level. This bifurcation leads to an apparent quantum number paradox, since subbands must be associated with consecutive integer quantum numbers. Evident only in films thicker than 15 monolayers, the bifurcation migrates upon annealing from subband to subband toward the zone center and ultimately vanishes. Various tests indicate that this perplexing behavior arises from transverse resonances in the film electronic structure caused by the reconstruction at the interface.

  1. Excitability in optically injected semiconductor lasers: Contrasting quantum- well- and quantum-dot-based devices

    NASA Astrophysics Data System (ADS)

    Kelleher, B.; Bonatto, C.; Huyet, G.; Hegarty, S. P.

    2011-02-01

    Excitability is a generic prediction for an optically injected semiconductor laser. However, the details of the phenomenon differ depending on the type of device in question. For quantum-well lasers very complicated multipulse trajectories can be found, while for quantum-dot lasers the situation is much simpler. Experimental observations show the marked differences in the pulse shapes while theoretical considerations reveal the underlying mechanism responsible for the contrast, identifying the increased stability of quantum-dot lasers to perturbations as the root.

  2. Excitability in optically injected semiconductor lasers: contrasting quantum-well- and quantum-dot-based devices.

    PubMed

    Kelleher, B; Bonatto, C; Huyet, G; Hegarty, S P

    2011-02-01

    Excitability is a generic prediction for an optically injected semiconductor laser. However, the details of the phenomenon differ depending on the type of device in question. For quantum-well lasers very complicated multipulse trajectories can be found, while for quantum-dot lasers the situation is much simpler. Experimental observations show the marked differences in the pulse shapes while theoretical considerations reveal the underlying mechanism responsible for the contrast, identifying the increased stability of quantum-dot lasers to perturbations as the root.

  3. Quantum Well and Quantum Dot Modeling for Advanced Infrared Detectors and Focal Plane Arrays

    NASA Technical Reports Server (NTRS)

    Ting, David; Gunapala, S. D.; Bandara, S. V.; Hill, C. J.

    2006-01-01

    This viewgraph presentation reviews the modeling of Quantum Well Infrared Detectors (QWIP) and Quantum Dot Infrared Detectors (QDIP) in the development of Focal Plane Arrays (FPA). The QWIP Detector being developed is a dual band detector. It is capable of running on two bands Long-Wave Infrared (LWIR) and Medium Wavelength Infrared (MWIR). The same large-format dual-band FPA technology can be applied to Quantum Dot Infrared Photodetector (QDIP) with no modification, once QDIP exceeds QWIP in single device performance. Details of the devices are reviewed.

  4. Hybrid quantum well/quantum dot structures for broad spectral bandwidth devices

    NASA Astrophysics Data System (ADS)

    Chen, Siming; Zhou, Kejia; Zhang, Ziyang; Childs, David T. D.; Orchard, Jonathan R.; Hogg, Richard A.; Kennedy, Kenneth; Hughes, Max.

    2012-02-01

    In this paper we report a hybrid quantum well (QW) and quantum dot (QD) structure to achieve a broad spontaneous emission and gain spectra. A single quantum well is introduced into a multi-layer stack of quantum dots, spectrally positioned to cancel the losses due to the second excited state of the dots. Attributed to the combined effect of QW and QDs, we show room temperature spontaneous emission with a 3dB bandwidth of ~250 nm and modal gain spanning over ~300 nm. We describe how this is achieved by careful design of the structure, balancing thermal emission from the QW and transport/capture processes in the QDs. We will also compare results from a QD-only epitaxial structure to describe how broadband gain/emission can be achieved in this new type of structure.

  5. Metallic behaviour in SOI quantum wells with strong intervalley scattering

    PubMed Central

    Renard, V. T.; Duchemin, I.; Niida, Y.; Fujiwara, A.; Hirayama, Y.; Takashina, K.

    2013-01-01

    The fundamental properties of valleys are recently attracting growing attention due to electrons in new and topical materials possessing this degree-of-freedom and recent proposals for valleytronics devices. In silicon MOSFETs, the interest has a longer history since the valley degree of freedom had been identified as a key parameter in the observation of the controversial “metallic behaviour” in two dimensions. However, while it has been recently demonstrated that lifting valley degeneracy can destroy the metallic behaviour, little is known about the role of intervalley scattering. Here, we show that the metallic behaviour can be observed in the presence of strong intervalley scattering in silicon on insulator (SOI) quantum wells. Analysis of the conductivity in terms of quantum corrections reveals that interactions are much stronger in SOI than in conventional MOSFETs, leading to the metallic behaviour despite the strong intervalley scattering. PMID:23774638

  6. Characterization and Analysis of Multi-Quantum Well Solar Cells

    NASA Astrophysics Data System (ADS)

    Bradshaw, Geoffrey Keith

    GaAs layers form quantum well capable of absorbing lower energy wavelengths than GaAs which leads to an increase in current. Absorption due to quantum wells is proportional to the number of quantum wells in the intrinsic region. Therefore, in order to grow the maximum number of the absorbing quantum wells within the background doping limited intrinsic region, it is necessary to reduce the width of the non-absorbing GaAsP barriers to as thin as possible. The research presented within shows this concept by exploring the fabrication and electrical characterization of these quantum well devices when balanced with ultra-thin GaAsP layers with very high phosphorus content (˜75-80%). By reducing the width of the barriers to approximately 30 A, tunneling of carriers dominates carrier transport across the structure as opposed to the traditional quantum well approach with very thick, low phosphorus GaAsP barriers that rely on thermionic emission of carriers to escape the InGaAs quantum wells. This research shows the strong effect and sensitivity to not only the thickness the GaAsP barriers, but also to the polarity of the device and the dependence of electric field. As well widths are decreased, quantum confinement of carriers within the InGaAs quantum wells increases. This leads to a blue-shift in the wavelengths of light absorbed and limits the current gain potential of the quantum well structure. To combat this blue-shift, the staggered MQW is introduced. The staggering technique can be use to not only improve wavelength absorption extension, but also lead to an enhancement in the absorption coefficient. These structures were also included into a GaInP/GaAs(MQW) tandem device to see the effects of the structure on the GaInP top cell.

  7. Recent Developments in Quantum-Well Infrared Photodetectors

    NASA Technical Reports Server (NTRS)

    Gunapala, S. D.; Bandara, K. M. S. V.

    1995-01-01

    Intrinsic infrared (IR) detectors in the long wavelength range (8-20 Am) are based on an optically excited interband transition, which promotes an electron across the band gap (E(sub g)) from the valence band to the conduction band as shown. These photoelectrons can be collected efficiently, thereby producing a photocurrent in the external circuit. Since the incoming photon has to promote an electron from the valence band to the conduction band, the energy of the photon (h(sub upsilon)) must be higher than the E(sub g) of the photosensitive material. Therefore, the spectral response of the detectors can be controlled by controlling the E(sub g) of the photosensitive material. Examples for such materials are Hg(1-x), Cd(x), Te, and Pb(1-x), Sn(x), Te, in which the energy gap can be controlled by varying x. This means detection of very-long-wavelength IR radiation up to 20 microns requires small band gaps down to 62 meV. It is well known that these low band gap materials, characterized by weak bonding and low melting points, are more difficult to grow and process than large-band gap semiconductors such as GaAs. These difficulties motivate the exploration of utilizing the intersub-band transitions in multiquantum well (MQW) structures made of more refractory large-band gap semiconductors. The idea of using MQW structures to detect IR radiation can be explained by using the basic principles of quantum mechanics. The quantum well is equivalent to the well-known particle in a box problem in quantum mechanics, which can be solved by the time independent Schroudiner equation.

  8. Excimer laser induced diffusion in magnetic semiconductor quantum wells

    NASA Astrophysics Data System (ADS)

    Howari, H.; Sands, D.; Nicholls, J. E.; Hogg, J. H. C.; Stirner, T.; Hagston, W. E.

    2000-08-01

    Studies of pulsed laser annealing (PLA) of CdTe/CdMnTe quantum well structures are made in order to examine depth dependent effects in laser irradiated semiconductors. Since diffusion coefficients are strongly dependent on the temperature, depth resolution is achieved because the diffusion of Mn from the barriers into the quantum wells is depth dependent. Multiple quantum well (MQW) structures of CdTe/CdMnTe were annealed with single pulses from an XeCl laser at 308 nm. At a threshold of 90 mJ cm-2 two new emission bands are observed that are attributed to the diffusion of Mn from barrier layers to QWs. The diffusion associated with these bands, measured as the integrated product of the diffusion constant and time, is found to be 300 and 30 Å2. Calculations of the temperature, reached within the surface following PLA, using an analytical solution of the heat diffusion equation coupled with known high temperature diffusion coefficients predict the diffusion to decrease by one order of magnitude within one period at the top of the MQW stack. It is suggested that at the threshold surface melting occurs and that these emission bands arise from the QWs immediately beneath the melt front. The diffusion of Mn ions into the QWs is confirmed by magneto-optical data. A further emission band occurs at this same threshold with a Mn concentration above that of the concentration in the barrier layers of the MQW stack. This emission is attributed tentatively to the segregation of the Mn ion within the molten region following recrystallization.

  9. Thermopower enhancement in quantum wells with the Rashba effect

    SciTech Connect

    Wu, Lihua; Yang, Jiong; Wang, Shanyu; Wei, Ping; Yang, Jihui E-mail: wqzhang@mail.sic.ac.cn; Zhang, Wenqing E-mail: wqzhang@mail.sic.ac.cn; Chen, Lidong

    2014-11-17

    We theoretically demonstrate that the thermopower in two-dimensional quantum wells (QWs) can be significantly enhanced by its Rashba spin-splitting effect, governed by the one-dimensional density of states in the low Fermi energy region. The thermopower enhancement is due to the lower Fermi level for a given carrier concentration in Rashba QWs, as compared with that in normal two-dimensional systems without the spin-splitting effect. The degenerate approximation directly shows that larger strength of Rashba effect leads to higher thermopower and consequently better thermoelectric performance in QWs.

  10. Reliability assessment of multiple quantum well avalanche photodiodes

    NASA Technical Reports Server (NTRS)

    Yun, Ilgu; Menkara, Hicham M.; Wang, Yang; Oguzman, Isamil H.; Kolnik, Jan; Brennan, Kevin F.; May, Gray S.; Wagner, Brent K.; Summers, Christopher J.

    1995-01-01

    The reliability of doped-barrier AlGaAs/GsAs multi-quantum well avalanche photodiodes fabricated by molecular beam epitaxy is investigated via accelerated life tests. Dark current and breakdown voltage were the parameters monitored. The activation energy of the degradation mechanism and median device lifetime were determined. Device failure probability as a function of time was computed using the lognormal model. Analysis using the electron beam induced current method revealed the degradation to be caused by ionic impurities or contamination in the passivation layer.

  11. Properties of the magnetopolaron in a triangular quantum well

    NASA Astrophysics Data System (ADS)

    Yali, Li; Shuping, Shan

    2015-08-01

    We study the properties of the magnetopolaron in a triangular quantum well within LLP variational method. At different electron-phonon coupling strength, we derive the relations between the ground state energy, the ground state binding energy with the electron areal density and the cyclotron frequency of magnetic field, respectively. Our numerical results show that the ground state energy is an increasing function of the electron areal density and the cyclotron frequency of the magnetic field. However, the ground state binding energy is a decreasing function of those.

  12. Ultrafast excitonic room temperature nonlinearity in neutron irradiated quantum wells

    SciTech Connect

    Ten, S.; Williams, J.G.; Guerreiro, P.T.; Khitrova, G.; Peyghambarian, N.

    1997-01-01

    Sharp room temperature exciton features and complete recovery of the excitonic absorption with 21 ps time constant are demonstrated in neutron irradiated (Ga,Al)As/GaAs multiple quantum wells. Carrier lifetime reduction is consistent with the EL2 midgap defect which is efficiently generated by fast neutrons. Influence of gamma rays accompanying neutron irradiation is discussed. Neutron irradiation provides a straightforward way to control carrier lifetime in semiconductor heterostructures with minor deterioration of their excitonic properties. {copyright} {ital 1997 American Institute of Physics.}

  13. Strong photoluminescence emission from resonant Fibonacci quantum wells.

    PubMed

    Chang, C H; Chen, C H; Hsueh, W J

    2013-06-17

    Strong photoluminescence (PL) emission from a resonant Fibonacci quantum well (FQW) is demonstrated. The maximum PL intensity in the FQW is significantly stronger than that in a periodic QW under the Bragg or anti-Bragg conditions. Moreover, the peaks of the squared electric field in the FQW are located very near each of the QWs. The optimal PL spectrum in the FQW has an asymmetrical form rather than the symmetrical one in the periodic case. The maximum PL intensity and the corresponding thickness filling factor in the FQW become greater with increasing generation order.

  14. Magnetic field induced minigap in double quantum wells

    SciTech Connect

    Simmons, J.A.; Lyo, S.K.; Klem, J.F.; Harff, N.E. |

    1994-07-01

    We report discovery of a partial energy gap, or minigap, in strongly coupled double quantum wells (QWs), due to an anticrossing of the two QW dispersion curves. The anticrossing and minigap are induced by an in-plane magnetic field B{sub {parallel}}, and give rise to large distortions in the Fermi surface and density of states, including a Van Hove singularity. Sweeping B{sub {parallel}} moves the minigap through the Fermi level, with the upper and lower gap edges producing a sharp maximum and minimum in the low-temperature in-plane conductance, in agreement with theoretical calculations. The gap energy may be directly determined from the data.

  15. Mid- and Long-IR Broadband Quantum Well Photodetector

    NASA Technical Reports Server (NTRS)

    Soibel, Alexander; Ting, David Z.; Khoshakhlagh, Arezou; Gunapala, Sarath D.

    2012-01-01

    A single-stack broadband quantum well infrared photodetector (QWIP) has been developed that consists of stacked layers of GaAs/AlGaAs quantum wells with absorption peaks centered at various wavelengths spanning across the 9- to-11- m spectral regions. The correct design of broadband QWIPs was a critical step in this task because the earlier implementation of broadband QWIPs suffered from a tuning of spectral response curve with an applied bias. Here, a new QWIP design has been developed to overcome the spectral tuning with voltage that results from non-uniformity and bias variation of the electrical field across the detector stacks with different absorption wavelengths. In this design, a special effort has been made to avoid non-uniformity and bias tuning by changing the doping levels in detector stacks to compensate for variation of dark current generation rate across the stacks with different absorption wavelengths. Single-pixel photodetectors were grown, fabricated, and tested using this new design. The measured dark current is comparable with the dark measured current for single-color QWIP detectors with similar cutoff wavelength, thus indicating high material quality as well as absence of performance degradation resulting from broadband design. The measured spectra clearly demonstrate that the developed detectors cover the desired special range of 8 to 12 m. Moreover, the shape of the spectral curves does not change with applied biases, thus overcoming the problem plaguing previous designs of broadband QWIPs.

  16. Highly efficient metallic optical incouplers for quantum well infrared photodetectors

    PubMed Central

    Liu, Long; Chen, Yu; Huang, Zhong; Du, Wei; Zhan, Peng; Wang, Zhenlin

    2016-01-01

    Herein, we propose a highly efficient metallic optical incoupler for a quantum well infrared photodetector (QWIP) operating in the spectrum range of 14~16 μm, which consists of an array of metal micropatches and a periodically corrugated metallic back plate sandwiching a semiconductor active layer. By exploiting the excitations of microcavity modes and hybrid spoof surface plasmons (SSPs) modes, this optical incoupler can convert infrared radiation efficiently into the quantum wells (QWs) layer of semiconductor region with large electrical field component (Ez) normal to the plane of QWs. Our further numerical simulations for optimization indicate that by tuning microcavity mode to overlap with hybrid SSPs mode in spectrum, a coupled mode is formed, which leads to 33-fold enhanced light absorption for QWs centered at wavelength of 14.5 μm compared with isotropic absorption of QWs without any metallic microstructures, as well as a large value of coupling efficiency (η) of |Ez|2 ~ 6. This coupled mode shows a slight dispersion over ~40° and weak polarization dependence, which is quite beneficial to the high performance infrared photodetectors. PMID:27456691

  17. Highly efficient metallic optical incouplers for quantum well infrared photodetectors

    NASA Astrophysics Data System (ADS)

    Liu, Long; Chen, Yu; Huang, Zhong; Du, Wei; Zhan, Peng; Wang, Zhenlin

    2016-07-01

    Herein, we propose a highly efficient metallic optical incoupler for a quantum well infrared photodetector (QWIP) operating in the spectrum range of 14~16 μm, which consists of an array of metal micropatches and a periodically corrugated metallic back plate sandwiching a semiconductor active layer. By exploiting the excitations of microcavity modes and hybrid spoof surface plasmons (SSPs) modes, this optical incoupler can convert infrared radiation efficiently into the quantum wells (QWs) layer of semiconductor region with large electrical field component (Ez) normal to the plane of QWs. Our further numerical simulations for optimization indicate that by tuning microcavity mode to overlap with hybrid SSPs mode in spectrum, a coupled mode is formed, which leads to 33-fold enhanced light absorption for QWs centered at wavelength of 14.5 μm compared with isotropic absorption of QWs without any metallic microstructures, as well as a large value of coupling efficiency (η) of |Ez|2 ~ 6. This coupled mode shows a slight dispersion over ~40° and weak polarization dependence, which is quite beneficial to the high performance infrared photodetectors.

  18. Quantum Well Thermoelectrics for Converting Waste Heat to Electricity

    SciTech Connect

    Saeid Ghamaty

    2007-04-01

    Fabrication development of high efficiency quantum well (QW) thermoelectric continues with the P-type and N-type Si/Si{sub 80}Ge{sub 20} films with encouraging results. These films are fabricated on Si substrates and are being developed for low as well as high temperature operation. Both isothermal and gradient life testing are underway. One couple has achieved over 4000 hours at T{sub H} of 300 C and T{sub C} of 50 C with little or no degradation. Emphasis is now shifting towards couple and module design and fabrication, especially low resistance joining between N and P legs. These modules can be used in future energy conversion systems as well as for air conditioning.

  19. Electron-interface phonon interaction in multiple quantum well structures

    NASA Astrophysics Data System (ADS)

    Sun, J. P.; Teng, H. B.; Haddad, G. I.; Stroscio, M. A.

    1998-08-01

    Intersubband relaxation rates due to electron interactions with the interface phonons are evaluated for multiple quantum well structures designed for step quantum well lasers operating at mid-infrared to submillimetre wavelengths. The interface phonon modes and electron-phonon interaction Hamiltonians for the structures are derived using the transfer matrix method, based on the macroscopic dielectric continuum model, whereas the electron wavefunctions are obtained by solving the Schrödinger equation. Fermi's golden rule is employed to calculate the electron relaxation rates between the subbands in these structures. The relaxation rates for two different structures are examined and compared with those calculated using the bulk phonon modes and the Fröhlich interaction Hamiltonian. The sum rule for the relationship between the form factors of the various localized phonon modes and the bulk phonon modes is verified. The results obtained in this work illustrate that the transfer matrix method provides a convenient way for deriving the properties of the interface phonon modes in different structures of current interest and that, for preferential electron relaxation in intersubband laser structures, the effects of the interface phonon modes are significant and should be considered for optimal design of these laser structures.

  20. Microwave Switching in Amorphous-Carbon Quantum Wells

    NASA Astrophysics Data System (ADS)

    Bhattacharyya, Somnath; Gomez Rojas, Luis; Silva, S. Ravi. P.

    2007-03-01

    Demonstration of long phase coherence length showing resonant tunnelling and fast switching in amorphous carbon quantum well structures has recently been established [1]. Here we show a bias controlled reversible switching of the complex impedance by transmitting a microwave signal up to 110GHz through amorphous carbon resonant tunnel diodes. By employing a coplanar waveguide technique and through the analysis of the return loss (S11) microwave enhanced mobility greater than 30cm^2(Vs)-1 in the delocalized regime of (filamentary) conduction in these devices is demonstrated. Also a switching behaviour at about 85GHz can also be observed. We suggest a new model for the microscopic origin of the increased mobility and show routes to achieve longer coherence lengths. In addition microwave conductance of carbon quantum wells parallel to their plane and across a channel length larger than 100 nm determines the momentum scattering time of electrons in carbon. These results exhibit a potential for pure amorphous carbon-based fast memory devices. [1] S. Bhattacharyya, S.J. Henley, E. Mendoza, L. Gomez Rojas, J. Allam and S.R.P. Silva, Nature Mater. 5, 19 (2006).

  1. Optical properties of transition metal oxide quantum wells

    NASA Astrophysics Data System (ADS)

    Demkov, Alexander; Choi, Miri; Butcher, Matthew; Rodriguez, Cesar; He, Qian; Posadas, Agham; Borisevich, Albina; Zollner, Stefan; Lin, Chungwei; Ortmann, Elliott

    2015-03-01

    We report on the investigation of SrTiO3/LaAlO3 quantum wells (QWs) grown by molecular beam epitaxy (MBE) on LaAlO3 substrate. Structures with different QW thicknesses ranging from two to ten unit cells were grown and characterized using x-ray photoemission spectroscopy, reflection high-energy electron diffraction (RHEED), scanning transmission electron microscopy (STEM). Optical properties (complex dielectric function) were measured by spectroscopic ellipsometry (SE) in the range of 1.0 eV to 6.0 eV at room temperature. We observed that the absorption edge was blue-shifted by approximately 0.39 eV as the STO quantum well thickness was reduced to two unit cells (uc). Density functional theory and tight-binding are used to model the optical response of these heterostructures. Our results demonstrate that the energy level of the first sub-band can be controlled by the QW thickness in a complex oxide material. We acknowledge support from Air Force Office of Scientific Research (FA9550-12-10494).

  2. Optimized photonic crystal design for quantum well infrared photodetectors

    NASA Astrophysics Data System (ADS)

    Reininger, P.; Kalchmair, S.; Gansch, R.; Andrews, A. M.; Detz, H.; Zederbauer, T.; Ahn, S. I.; Schrenk, W.; Strasser, G.

    2012-06-01

    The performance of quantum well infrared photodetectors (QWIP) can be significantly enhanced combining it with a photonic crystal slab (PCS) resonator. In such a system the chosen PCS mode is designed to coincide with the absorption maximum of the photodetector by adjusting the lattice parameters. However there is a multitude of parameter sets that exhibit the same resonance frequency of the chosen PCS mode. We have investigated how the choice of the PC design can be exploited for a further enhancement of QWIPs. Several sets of lattice parameters that exhibit the chosen PCS mode at the same resonance frequency have been obtained and the finite difference time domain method was used to simulate the absorption spectra of the different PCS. A photonic crystal slab quantum well infrared photodetector with three different photonic crystal lattice designs that exhibit the same resonance frequency of the chosen PCS mode were designed, fabricated and measured. This work shows that the quality factor of a PCS-QWIP and therefore the absorption enhancement can be increased by an optimized PCS design. The improvement is a combined effect of a changed lattice constant, PC normalized radius and normalized slab thickness. An enhancement of the measured photocurrent of more than a factor of two was measured.

  3. Origins of low energy-transfer efficiency between patterned GaN quantum well and CdSe quantum dots

    SciTech Connect

    Xu, Xingsheng

    2015-03-02

    For hybrid light emitting devices (LEDs) consisting of GaN quantum wells and colloidal quantum dots, it is necessary to explore the physical mechanisms causing decreases in the quantum efficiencies and the energy transfer efficiency between a GaN quantum well and CdSe quantum dots. This study investigated the electro-luminescence for a hybrid LED consisting of colloidal quantum dots and a GaN quantum well patterned with photonic crystals. It was found that both the quantum efficiency of colloidal quantum dots on a GaN quantum well and the energy transfer efficiency between the patterned GaN quantum well and the colloidal quantum dots decreased with increases in the driving voltage or the driving time. Under high driving voltages, the decreases in the quantum efficiency of the colloidal quantum dots and the energy transfer efficiency can be attributed to Auger recombination, while those decreases under long driving time are due to photo-bleaching and Auger recombination.

  4. 2. QUANTUM HALL EFFECT: Hidden SU(4) symmetry in bilayer quantum well at integer filling factors

    NASA Astrophysics Data System (ADS)

    Fal'ko, V. I.; Iordanskii, S. V.; Kashuba, A. B.

    2001-10-01

    Phase diagram of a bilayer quantum well at integer filling factors is established using the hidden symmetry method. Three phases: ferromagnetic, canted antiferromagnetic (CAP) and spin-singlet, have been found. We confirm early results of Das Sarma et al. Each phase violates the SU(4) hidden symmetry and is stabilized by the anisotropy interactions.

  5. Efficiency of GaInAs/GaAs quantum-well lasers upon inhomogeneous excitation of quantum wells

    SciTech Connect

    Ushakov, D V; Afonenko, A A; Aleshkin, V Ya

    2013-11-30

    A model for calculating the power characteristics of laser structures taking into account inhomogeneous excitation of quantum wells (QWs), recombination in the barrier regions, and nonlinear gain effects is developed. It is shown that, with increasing number of QWs, the output power of the Ga{sub 0.8}In{sub 0.2}As/GaAs/InGaP structures at first considerably increases and then slightly decreases. In a wide range of injection currents, the optimal number of QWs is 5 ± 1. The inhomogeneity of QW excitation increases with increasing injection current and decreases the laser power compared to homogeneous excitation. (lasers)

  6. Quantum-well lasers for direct solar photopumping

    NASA Astrophysics Data System (ADS)

    Unnikrishnan, Sreenath; Anderson, Neal G.

    1993-09-01

    Semiconductor lasers directly photopumped by focused sunlight may be viable sources of coherent light for intersatellite communications and other low-power spaceborne applications. In this work, we theoretically explore the possibility of realizing such devices. We specifically assess solar pumped operation of separate-confinement-quantum-well heterostructure (SCQWH) lasers based on InGaAs, GaAs, and AlGaA, as fabrication technology for these lasers is mature and they can operate at very low thresholds. We develop a model for step-index single-well SCQWH lasers photopumped by sunlight, examine how threshold solar photoexcitation intensities depend upon material and structure parameters, design optimum structures for solar-pumped operation, and identify design tradeoffs. Our results suggest that laser action should be possible in properly designed structures at readily achievable solar concentrations and that optimum designs for solar-pumped SCQWH lasers differ significantly from those for analogous current injection devices.

  7. Enhancement of electron mobility in asymmetric coupled quantum well structures

    SciTech Connect

    Das, S.; Nayak, R. K.; Sahu, T. Panda, A. K.

    2014-02-21

    We study the low temperature multisubband electron mobility in a structurally asymmetric GaAs/Al{sub x}Ga{sub 1-x}As delta doped double quantum well. We calculate the subband energy levels and wave functions through selfconsistent solution of the coupled Schrodinger equation and Poisson's equation. We consider ionized impurity scattering, interface roughness scattering, and alloy disorder scattering to calculate the electron mobility. The screening of the scattering potentials is obtained by using static dielectric response function formalism within the random phase approximation. We analyze, for the first time, the effect of asymmetric structure parameters on the enhancement of multisubband electron mobility through intersubband interactions. We show that the asymmetric variation of well width, doping concentration, and spacer width considerably influences the interplay of scattering mechanisms on mobility. Our results of asymmetry induced enhancement of electron mobility can be utilized for low temperature device applications.

  8. Quantum confinement of a hydrogenic donor in a double quantum well: Through diamagnetic susceptibility

    SciTech Connect

    Vignesh, G.; Nithiananthi, P.

    2015-06-24

    Diamagnetic susceptibility of a randomly distributed donor in a GaAs/Al{sub 0.3}Ga{sub 0.7}As Double Quantum Well has been calculated in its ground state as a function of barrier and well width. It is shown that the modification in the barrier and well dimension significantly influences the dimensional character of the donor through modulating the subband distribution and in turn the localization of the donor. The effect of barrier and well thickness on the interparticle distance has also been observed. Interestingly it opens up the possibility of tuning the susceptibility and monitoring the tunnel coupling among the wells.

  9. Radiation Hard AlGaN Detectors and Imager

    SciTech Connect

    2012-05-01

    Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

  10. II-VI semiconductor quantum dot quantum wells: a tight-binding study

    NASA Astrophysics Data System (ADS)

    Pérez-Conde, J.; Bhattacharjee, A. K.

    2006-05-01

    We have studied the electronic structure, exciton states and optical spectra of spherical semiconductor quantum dot quantum wells (QDQW's) by means of a symmetry-adapted tight-binding (TB) method. We have investigated two classes of QDQW's: CdS/HgS/CdS, based on a CdS core which acts as a barrier, with a thin HgS well layer intercalated between the core and a clad layer of CdS. The second class of QDQW's is based on ZnS cores covered with CdS layers which act in this case as a well. The calculated values of the absorption onset show a good agreement with the experimental data. Large photoluminescence Stokes shifts are also predicted.

  11. Dissipation of intersubband plasmons in wide quantum wells.

    PubMed

    Williams, J B; Sherwin, M S; Maranowski, K D; Gossard, A C

    2001-07-16

    This Letter reports detailed measurements of the dissipation times tau(d) of approximately 10 meV intersubband (ISB) plasmons, and of the (single-particle) transport lifetimes tau(mu), in a remotely doped 40 nm GaAs quantum well. Introduced here as the time for ISB plasmons to dissipate into other modes of the electron gas, tau(d) is deduced from the homogeneous ISB absorption linewidth, measured as a function of sheet concentration and perpendicular dc electric field. Modeling in this and the next Letter [C. A. Ullrich and G. Vignale, Phys. Rev. Lett. 87, 037402 (2001)] indicates that scattering from rough interfaces dominates tau(d), while scattering from ionized impurities dominates tau(mu).

  12. Mapping the Copper energy band using the quantum well states

    NASA Astrophysics Data System (ADS)

    Wu, J.; Choi, J.; Owens, T.; Qiu, Z. Q.; Rotenberg, E.; Smith, N. V.

    2006-03-01

    Quantum well states (QWS) of copper electrons in Cu/Co/Cu(100) system are investigated using Angle Resolved Photoemission Electron Spectroscopy (ARPES). The samples were grown epitaxially at room temperature and measured in situ at beamlime 7 of the Advanced Light Source (ALS). Photoemission intensity oscillates with both the electron energy and the Cu film thickness. By counting the thickness oscillation periodicity at a given energy, we can determine the out-of-plane electron momentum without the need of the phase value in the phase accumulation model. This allows the experimental determination of the E-k relation (energy band) for the Cu film. We here report the Cu energy band determined in this way at different in-plane momentum. In addition, by fitting the oscillation as a function of the Cu thickness, we also determined the phase value of the quantization condition as a function of the energy and in-plane momentum.

  13. Dissipation of Intersubband Plasmons in Wide Quantum Wells

    NASA Astrophysics Data System (ADS)

    Williams, J. B.; Sherwin, M. S.; Maranowski, K. D.; Gossard, A. C.

    2001-07-01

    This Letter reports detailed measurements of the dissipation times τd of ~10 meV intersubband (ISB) plasmons, and of the (single-particle) transport lifetimes τμ, in a remotely doped 40 nm GaAs quantum well. Introduced here as the time for ISB plasmons to dissipate into other modes of the electron gas, τd is deduced from the homogeneous ISB absorption linewidth, measured as a function of sheet concentration and perpendicular dc electric field. Modeling in this and the next Letter [C. A. Ullrich and G. Vignale, Phys. Rev. Lett. 87, 037402 (2001)] indicates that scattering from rough interfaces dominates τd, while scattering from ionized impurities dominates τμ.

  14. Probing light emission from quantum wells within a single nanorod

    NASA Astrophysics Data System (ADS)

    Bruckbauer, Jochen; Edwards, Paul R.; Bai, Jie; Wang, Tao; Martin, Robert W.

    2013-09-01

    Significant improvements in the efficiency of optoelectronic devices can result from the exploitation of nanostructures. These require optimal nanocharacterization techniques to fully understand and improve their performance. In this study we employ room temperature cathodoluminescence hyperspectral imaging to probe single GaN-based nanorods containing multiple quantum wells (MQWs) with a simultaneous combination of very high spatial and spectral resolution. We have investigated the strain state and carrier transport in the vicinity of the MQWs, demonstrating the high efficiencies resulting from reduced electric fields. Power-dependent photoluminescence spectroscopy of arrays of these nanorods confirms that their fabrication results in partial strain relaxation in the MQWs. Our technique allows us to interrogate the structures on a sufficiently small length scale to be able to extract the important information.

  15. Probing light emission from quantum wells within a single nanorod.

    PubMed

    Bruckbauer, Jochen; Edwards, Paul R; Bai, Jie; Wang, Tao; Martin, Robert W

    2013-09-13

    Significant improvements in the efficiency of optoelectronic devices can result from the exploitation of nanostructures. These require optimal nanocharacterization techniques to fully understand and improve their performance. In this study we employ room temperature cathodoluminescence hyperspectral imaging to probe single GaN-based nanorods containing multiple quantum wells (MQWs) with a simultaneous combination of very high spatial and spectral resolution. We have investigated the strain state and carrier transport in the vicinity of the MQWs, demonstrating the high efficiencies resulting from reduced electric fields. Power-dependent photoluminescence spectroscopy of arrays of these nanorods confirms that their fabrication results in partial strain relaxation in the MQWs. Our technique allows us to interrogate the structures on a sufficiently small length scale to be able to extract the important information.

  16. Magnetoluminescence spectra from quantum wells under high intensity pulsed excitation

    NASA Astrophysics Data System (ADS)

    Kioseoglou, G.; Haetty, J.; Cheong, H. D.; Chang, H. C.; Luo, H.; Petrou, A.; Dutta, M.; Pamulapati, J.

    1998-03-01

    Luminescence spectra from GaAs/AlAs and ZnCdSe/ZnSe quantum wells have been studied in magnetic fields up to 30 Tesla. The spectra were excited using a pulsed nitrogen laser pumping a dye module with a peak output power of 6 kW. The luminescence spectra exhibit a large number (up to 17) of distinct features due to interband transitions associated with the lowest confinement subbands e1 and h_1. The slopes dE/dB of these features indicate that they are associated with conduction band Landau levels. The value of these slopes is approximately 20% (12%) lower for the GaAs/AlAs (ZnCdSe/ZnSe) structures, assuming radiative recombinations with only the lowest valence band Landau level. If this assumption is relaxed, the observed reduction of the values of dE/dB would be even larger.

  17. Effective interaction and condensation of dipolaritons in coupled quantum wells

    NASA Astrophysics Data System (ADS)

    Byrnes, Tim; Kolmakov, German V.; Kezerashvili, Roman Ya.; Yamamoto, Yoshihisa

    2014-09-01

    Dipolaritons are a three-way superposition of a photon, a direct exciton, and an indirect exciton that are formed in coupled quantum well microcavities. As is the case with exciton-polaritons, dipolaritons have a self-interaction due to direct and exchange effects of the underlying electrons and holes. Here we present a theoretical description of dipolaritons and derive simple formulas for their basic parameters. In particular, we derive the effective dipolariton-dipolariton interaction taking into account exchange effects between the excitons. We obtain a simple relation to describe the effective interaction at low densities. We find that dipolaritons should condense under suitable conditions, described by a dissipative Gross-Pitaevskii equation. While the parameters for condensation are promising, we find that the level of tunability of the interactions is limited.

  18. Bose-Einstein condensation of dipolar excitons in quantum wells

    NASA Astrophysics Data System (ADS)

    Timofeev, V. B.; Gorbunov, A. V.

    2009-02-01

    The experiments on Bose-Einstein condensation (BEC) of dipolar (spatially-indirect) excitons in the lateral traps in GaAs/AlGaAs Schottky-diode heterostructures with double and single quantum wells are presented. The condensed part of dipolar excitons under detection in the far zone is placed in k-space in the range which is almost two orders of magnitude less than thermal exciton wave vector. BEC occurs spontaneously in a reservoir of thermalized excitons. Luminescence images of Bose-condensate of dipolar excitons exhibit along perimeter of circular trap axially symmetrical spatial structures of equidistant bright spots which strongly depend on excitation power and temperature. By means of two-beam interference experiments with the use of cw and pulsed photoexcitation it was found that the state of dipolar exciton Bose-condensate is spatially coherent and the whole patterned luminescence configuration in real space is described by a common wave function.

  19. Integrated photonic crystals and quantum well infrared photodetector

    NASA Astrophysics Data System (ADS)

    Zhou, T.; Tsui, D. C.; Choi, K. K.

    2004-03-01

    GaAs/AlGaAs based quantum well infrared photodetectors (QWIP) are becoming very reliable technologies that are widely used to detect mid-infrared light. Photonic crystals, on the other hand, are very powerful tools to manipulate light and thus are very crucial elements in future optical integration circuits. have fabricated a series of devices that incorporate QWIP and 2d photonic crystals together on a single GaAs based chip. These devices work at the 7-13 μ m range. Compared with the conventional photonic crystals designed for fiber communication, these devices have the advantage that they only require photolithography instead of e-beam lithography. The fabrication of such devices is thus far less costly and time-consuming.

  20. Fabrication and optical studies of semiconductor quantum well structures

    NASA Astrophysics Data System (ADS)

    Chang, Huicheng

    In an effort to investigate modulation doping and 2-dimensional electron gas in wide gap semiconductors and diluted magnetic semiconductors, we carried out systematic studies of n-type modulation doped ZnSe/Zn0.86Cd0.14Se and ZnSe/Zn0.825Cd 0.14Mn0.035Se single quantum well structures. The roles of spacers between doped barriers and undoped wells, as well as doping levels with regard to screening of excitons, were investigated. Low temperature photoluminescence studies were performed under magnetic fields up to 30 tesla. In the presence of a magnetic field, distinct features evolved from the broad luminescence band. These are attributed to interband transitions between electrons occupying Landau levels to photoexcited holes. An analysis of the Landau-level occupation as a function of magnetic field yields the electron sheet density. Modulation doping was also studied in the context of lasing characteristics, such as doping the barriers in the active region of ZnSe/ZnCdSe quantum well laser structures. With the aid of n-type modulation doping, the optical gain (∝ (fc - fv)) enhanced by the modifications of the Fermi-Dirac distribution functions for electrons and holes in the conduction and valence bands. Resulting threshold conditions were obtained to be 1/2 ˜ 1/3 of those without modulation doping in the active regions. The biexcitonic stimulated emission, ˜10 meV below the main excitonic emission, was also observed in undoped samples, but not in the modulation doped structures due to the instability of excitons caused by the two dimensional electron gas in the well. We also studied the lasing modes in broad-area, equilateral triangular laser cavities, which take advantage of total internal reflection at the cleaved facets of the cavity for circulating modes. A new approach is proposed to study optical modes in equilateral triangular cavities in an analytical form. The modes were obtained by examining the simplest optical paths inside the cavity, which yields

  1. Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates

    SciTech Connect

    Bryan, Zachary Bryan, Isaac; Sitar, Zlatko; Collazo, Ramón; Mita, Seiji; Tweedie, James

    2015-06-08

    Since the band ordering in AlGaN has a profound effect on the performance of UVC light emitting diodes (LEDs) and even determines the feasibility of surface emitting lasers, the polarization properties of emitted light from c-oriented AlGaN and AlGaN-based laser structures were studied over the whole composition range, as well as various strain states, quantum confinements, and carrier densities. A quantitative relationship between the theoretical valence band separation, determined using k•p theory, and the experimentally measured degree of polarization is presented. Next to composition, strain was found to have the largest influence on the degree of polarization while all other factors were practically insignificant. The lowest crossover point from the transverse electric to transverse magnetic polarized emission of 245 nm was found for structures pseudomorphically grown on AlN substrates. This finding has significant implications toward the efficiency and feasibility of surface emitting devices below this wavelength.

  2. Wavelength-insensitive radiation coupling for multi-quantum well sensor based on intersubband absorption

    NASA Technical Reports Server (NTRS)

    Gunapala, Sarath D. (Inventor); Bandara, Sumith V. (Inventor); Liu, John K. (Inventor)

    2006-01-01

    Devices and techniques for coupling radiation to intraband quantum-well semiconductor sensors that are insensitive to the wavelength of the coupled radiation. At least one reflective surface is implemented in the quantum-well region to direct incident radiation towards the quantum-well layers.

  3. Coherent nanocavity structures for enhancement in internal quantum efficiency of III-nitride multiple quantum wells

    SciTech Connect

    Kim, T.; Liu, B.; Smith, R.; Athanasiou, M.; Gong, Y.; Wang, T.

    2014-04-21

    A “coherent” nanocavity structure has been designed on two-dimensional well-ordered InGaN/GaN nanodisk arrays with an emission wavelength in the green spectral region, leading to a massive enhancement in resonance mode in the green spectra region. By means of a cost-effective nanosphere lithography technique, we have fabricated such a structure on an InGaN/GaN multiple quantum well epiwafer and have observed the “coherent” nanocavity effect, which leads to an enhanced spontaneous emission (SE) rate. The enhanced SE rate has been confirmed by time resolved photoluminescence measurements. Due to the coherent nanocavity effect, we have achieved a massive improvement in internal quantum efficiency with a factor of 88, compared with the as-grown sample, which could be significant to bridge the “green gap” in solid-state lighting.

  4. Improving hole injection and carrier distribution in InGaN light-emitting diodes by removing the electron blocking layer and including a unique last quantum barrier

    SciTech Connect

    Cheng, Liwen Chen, Haitao; Wu, Shudong

    2015-08-28

    The effects of removing the AlGaN electron blocking layer (EBL), and using a last quantum barrier (LQB) with a unique design in conventional blue InGaN light-emitting diodes (LEDs), were investigated through simulations. Compared with the conventional LED design that contained a GaN LQB and an AlGaN EBL, the LED that contained an AlGaN LQB with a graded-composition and no EBL exhibited enhanced optical performance and less efficiency droop. This effect was caused by an enhanced electron confinement and hole injection efficiency. Furthermore, when the AlGaN LQB was replaced with a triangular graded-composition, the performance improved further and the efficiency droop was lowered. The simulation results indicated that the enhanced hole injection efficiency and uniform distribution of carriers observed in the quantum wells were caused by the smoothing and thinning of the potential barrier for the holes. This allowed a greater number of holes to tunnel into the quantum wells from the p-type regions in the proposed LED structure.

  5. Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots

    NASA Technical Reports Server (NTRS)

    Leon, R.; Swift, G. M.; Magness, B.; Taylor, W. A.; Tang, Y. S.; Wang, K. L.; Dowd, P.; Zhang, Y. H.

    2000-01-01

    The photoluminescence emission from InGaAs/GaAs quantum-well and quantum-dot (QD) structures are compared after controlled irradiation with 1.5 MeV proton fluxes. Results presented here show a significant enhancement in radiation tolerance with three-dimensional quantum confinement.

  6. Performance of 128×128 solar-blind AlGaN ultraviolet focal plane arrays

    NASA Astrophysics Data System (ADS)

    Yuan, Yongang; Zhang, Yan; Liu, Dafu; Chu, Kaihui; Wang, Ling; Li, Xiangyang

    2009-07-01

    Ozone layer intensively absorbs 240nm to 285 nm incidence, when the sunshine goes through stratospheric. There is almost no UVC (200nm-280nm) band radiation existing below stratospheric. Because the radiation target presents a strong contrast between atmosphere and background, solar-blind band radiation is very useful. Wide band gap materials, especially III-V nitride materials, have attracted extensive interest. The direct band gap of GaN and A1N is 3.4 and 6.2 eV, respectively. Since they are miscible with each other and form a complete series of AlGaN alloys, AlGaN has direct band gaps from 3.4 to 6.2 eV, corresponding to cutoff wavelengths from 365 to 200 nm. A back-illuminated hybrid FPA has been developed by Shanghai Institute of Technical Physics Chinese Academy of Science. This paper reports the performance of the 128x128 solar-blind AlGaN UV Focal Plane Arrays (FPAs). More and more a CTIA (capacitivetransimpedance) readout circuit architecture has been proven to be well suited for AlGaN detectors arrays. The bared readout circuit was first tested to find out optimal analog reference voltage. Second, this ROIC was tested in a standard 20-pin shielded dewar at 115 K to 330K. Then, a new test system was set up to obtain test UV FPA noise, swing voltage, data valid time, operating speed, dynamic range, UV response etc. The results show that 128x128 back-illuminated AlGaN PIN detector SNR is as high as 74db at the speed of above30 frame per second. Also, some noise test method is mentioned.

  7. Composition dependent valence band order in c-oriented wurtzite AlGaN layers

    SciTech Connect

    Neuschl, B. Helbing, J.; Knab, M.; Lauer, H.; Madel, M.; Thonke, K.; Feneberg, M.

    2014-09-21

    The valence band order of polar wurtzite aluminum gallium nitride (AlGaN) layers is analyzed for a dense series of samples, grown heteroepitaxially on sapphire substrates, covering the complete composition range. The excitonic transition energies, found by temperature dependent photoluminescence (PL) spectroscopy, were corrected to the unstrained state using input from X-ray diffraction. k∙p theory yields a critical relative aluminum concentration x{sub c}=(0.09±0.05) for the crossing of the uppermost two valence bands for strain free material, shifting to higher values for compressively strained samples, as supported by polarization dependent PL. The analysis of the strain dependent valence band crossing reconciles the findings of other research groups, where sample strain was neglected. We found a bowing for the energy band gap to the valence band with Γ₉ symmetry of b{sub Γ₉}=0.85eV, and propose a possible bowing for the crystal field energy of b{sub cf}=-0.12eV. A comparison of the light extraction efficiency perpendicular and parallel to the c axis of Al{sub x}Ga{sub 1-x}N/Al{sub y}Ga{sub 1-y}N quantum well structures is discussed for different compositions.

  8. Quantum-well lasers for direct solar photopumping

    NASA Astrophysics Data System (ADS)

    Unnikrishnan, Sreenath; Anderson, Neal G.

    1993-09-01

    Semiconductor lasers directly photopumped by focused sunlight may be viable sources of coherent light for intersatellite communications and other low-power spaceborne applications. In this work, we theoretically explore the possibility of realizing such devices. We specifically assess solar pumped operation of separate-confinement-quantum-well heterostructure (SCQWH) lasers based on InGaAs, GaAs, and AlGaAs, as fabrication technology for these lasers is mature and they can operate at very low thresholds. We develop a model for step-index single-well SCQWH lasers photopumped by sunlight, examine how threshold solar photoexcitation intensities (or solar magnification requirements) depend upon material and structure parameters, design optimum structures for solar-pumped operation, and identify design trade offs. Our results suggest that laser action should be possible in properly designed structures at readily achievable solar concentrations (103-104 suns under air-mass-zero conditions), and that optimum designs for solar-pumped SCQWH lasers differ significantly from those for analogous current injection devices.

  9. Fisher information and quantum potential well model for finance

    NASA Astrophysics Data System (ADS)

    Nastasiuk, V. A.

    2015-09-01

    The probability distribution function (PDF) for prices on financial markets is derived by extremization of Fisher information. It is shown how on that basis the quantum-like description for financial markets arises and different financial market models are mapped by quantum mechanical ones.

  10. Study of multiple InAs/GaAs quantum-well structures by electroreflectance spectroscopy

    SciTech Connect

    Bolshakov, A. S. Chaldyshev, V. V. Babichev, A. V.; Kudryashov, D. A.; Gudovskikh, A. S.; Morozov, I. A.; Sobolev, M. S.; Nikitina, E. V.

    2015-11-15

    A periodic Bragg heterostructure with three ultrathin InAs/GaAs quantum wells in a period is fabricated and studied. The splitting energy of exciton transitions in quantum wells is determined by the electroreflectance- spectroscopy method and numerical quantum-mechanical calculation. The significant influence of interference effects on individual peak areas in the electroreflectance spectrum is detected.

  11. Many-Body Effects in Quantum-Well Intersubband Transitions

    NASA Technical Reports Server (NTRS)

    Li, Jian-Zhong; Ning, Cun-Zheng

    2003-01-01

    Intersubband polarization couples to collective excitations of the interacting electron gas confined in a semiconductor quantum well (Qw) structure. Such excitations include correlated pair excitations (repellons) and intersubband plasmons (ISPs). The oscillator strength of intersubband transitions (ISBTs) strongly varies with QW parameters and electron density because of this coupling. We have developed a set of kinetic equations, termed the intersubband semiconductor Bloch equations (ISBEs), from density matrix theory with the Hartree-Fock approximation, that enables a consistent description of these many-body effects. Using the ISBEs for a two-conduction-subband model, various many-body effects in intersubband transitions are studied in this work. We find interesting spectral changes of intersubband absorption coefficient due to interplay of the Fermi-edge singularity, subband renormalization, intersubband plasmon oscillation, and nonparabolicity of bandstructure. Our results uncover a new perspective for ISBTs and indicate the necessity of proper many-body theoretical treatment in order for modeling and prediction of ISBT line shape.

  12. Fractal quantum well heterostructures for broadband light emitters

    SciTech Connect

    Crawford, M.H.; Gourley, P.L.; Meissner, K.E.; Sinclair, M.B.; Jones, E.D.; Chow, W.W.; Schneider, R.P. Jr.

    1994-12-31

    We examine carrier relaxation and radiative recombination in AlGaAs based near IR and AlGaInP based visible fractal quantum well heterostructures. Through temperature dependent photoluminescence, we demonstrate that enhanced population of higher lying energy levels can be achieved by varying the thickness of the layers in the fractal heterostructurd. This distribution of carriers results in room temperature emission over a relatively broad range of wavelengths: approximately 700--855 nm for AlGaAs structures and 575--650 nm for AlGaInP structures. Spectra are compared to theoretical calculations to evaluate the non-equilibrium nature of the carrier distributions. Time resolved photoluminescence measurements demonstrate an approximately linear relationship between the radiative decay time and the layer thickness of the structure. Correspondingly, integrated luminescence measurements at room temperature reveal a factor of four increase in the light output efficiency of the structure as the fractal layer thickness is increased from 50 {angstrom} to 400 {angstrom}. The applicability of these heterostructures to broadband LEDs is discussed.

  13. Tunneling modulation of a quantum-well transistor laser

    NASA Astrophysics Data System (ADS)

    Feng, M.; Qiu, J.; Wang, C. Y.; Holonyak, N.

    2016-11-01

    Different than the Bardeen and Brattain transistor (1947) with the current gain depending on the ratio of the base carrier spontaneous recombination lifetime to the emitter-collector transit time, the Feng and Holonyak transistor laser current gain depends upon the base electron-hole (e-h) stimulated recombination, the base dielectric relaxation transport, and the collector stimulated tunneling. For the n-p-n transistor laser tunneling operation, the electron-hole pairs are generated at the collector junction under the influence of intra-cavity photon-assisted tunneling, with electrons drifting to the collector and holes drifting to the base. The excess charge in the base lowers the emitter junction energy barrier, allowing emitter electron injection into the base and satisfying charge neutrality via base dielectric relaxation transport (˜femtoseconds). The excess electrons near the collector junction undergo stimulated recombination at the base quantum-well or transport to the collector, thus supporting tunneling current amplification and optical modulation of the transistor laser.

  14. Photon-Inhibited Topological Transport in Quantum Well Heterostructures.

    PubMed

    Farrell, Aaron; Pereg-Barnea, T

    2015-09-04

    Here we provide a picture of transport in quantum well heterostructures with a periodic driving field in terms of a probabilistic occupation of the topologically protected edge states in the system. This is done by generalizing methods from the field of photon-assisted tunneling. We show that the time dependent field dresses the underlying Hamiltonian of the heterostructure and splits the system into sidebands. Each of these sidebands is occupied with a certain probability which depends on the drive frequency and strength. This leads to a reduction in the topological transport signatures of the system because of the probability to absorb or emit a photon. Therefore when the voltage is tuned to the bulk gap the conductance is smaller than the expected 2e(2)/h. We refer to this as photon-inhibited topological transport. Nevertheless, the edge modes reveal their topological origin in the robustness of the edge conductance to disorder and changes in model parameters. In this work the analogy with photon-assisted tunneling allows us to interpret the calculated conductivity and explain the sum rule observed by Kundu and Seradjeh.

  15. Stimulated emission in strained-layer quantum-well heterostructures

    SciTech Connect

    Camras, M.D.; Brown, J.M.; Holonyak, N. Jr.; Nixon, M.A.; Kaliski, R.W.; Ludowise, M.J.; Dietze, W.T.; Lewis, C.R.

    1983-11-01

    Stimulated emission data are presented on a large variety of strained-layer quantum-well heterostructures (QWH's) and superlattices (SL's) grown by metalorganic chemical vapor deposition (MOCVD). These structures consist of barrier-well combinations of thickness L/sub B/,L/sub z/ < or approx. =150 A made from GaAs-InGaAs, GaAsP-GaAs, and GaAsP-InGaAs. Also employed are higher band-gap confining layers of In/sub x/Al/sub y/Ga/sub 1hyphenx/-yAs, Al/sub y/Ga/sub 1-y/As/sub 1-x/P/sub x/, and Al/sub x/Ga/sub 1-x/As. All of the heterostructures are grown on a GaAs substrate with and, in some cases, without a graded layer. The strain range between 0.2 to 12.5 x 10/sup -3/ is examined. Photopumped, these heterostructures operate as continuous (cw) 300 K lasers, with thresholds of 1.6--7.5 x 10/sup 3/ W/cm/sup 2/, for periods of time between 0.5 to >35 min. Under high-level excitation, the equivalent of J/sub eq/approx.10/sup 3/ A/cm/sup 2/, laser operation fails or is quenched by networks of dislocations (with <110> Burger's vectors) that are generated within the strained-layer region of the QWH's or SL's. These dislocation networks, which are revealed via transmission electron microscopy (TEM), occur at a more rapid rate in higher threshold samples and ones with higher built-in strain. The TEM data show, however, that no heterointerface defects (dislocations) are present in the as-grown strained-layer regions but are present in thick (bulk) graded regions.

  16. Hybrid Silicon Photonic Integration using Quantum Well Intermixing

    NASA Astrophysics Data System (ADS)

    Jain, Siddharth R.

    With the push for faster data transfer across all domains of telecommunication, optical interconnects are transitioning into shorter range applications such as in data centers and personal computing. Silicon photonics, with its economic advantages of leveraging well-established silicon manufacturing facilities, is considered the most promising approach to further scale down the cost and size of optical interconnects for chip-to-chip communication. Intrinsic properties of silicon however limit its ability to generate and modulate light, both of which are key to realizing on-chip optical data transfer. The hybrid silicon approach directly addresses this problem by using molecularly bonded III-V epitaxial layers on silicon for optical gain and absorption. This technology includes direct transfer of III-V wafer to a pre-patterned silicon-on-insulator wafer. Several discrete devices for light generation, modulation, amplification and detection have already been demonstrated on this platform. As in the case of electronics, multiple photonic elements can be integrated on a single chip to improve performance and functionality. However, scalable photonic integration requires the ability to control the bandgap for individual devices along with design changes to simplify fabrication. In the research presented here, quantum well intermixing is used as a technique to define multiple bandgaps for integration on the hybrid silicon platform. Implantation enhanced disordering is used to generate four bandgaps spread over 120+ nm. By combining these selectively intermixed III-V layers with pre-defined gratings and waveguides on silicon, we fabricate distributed feedback, distributed Bragg reflector, Fabry-Perot and mode-locked lasers along with photodetectors, electro-absorption modulators and other test structures, all on a single chip. We demonstrate a broadband laser source with continuous-wave operational lasers over a 200 nm bandwidth. Some of these lasers are integrated with

  17. Polaron effects in asymmetric semiconductor quantum-well structures

    NASA Astrophysics Data System (ADS)

    Shi, Jun-Jie; Zhu, Xiu-Qin; Liu, Zi-Xin; Pan, Shao-Hua; Li, Xing-Yi

    1997-02-01

    In this paper, polaron effects in asymmetric quantum-well structures (QW's) are investigated by using second-order perturbation theory and the modified Lee-Low-Pines (LLP) variational method. By applying the Green"s-function method, explicit analytical expressions for the electron extended-state wave functions and the density of states in a general step QW's are given. Within the framework of second-order perturbation theory, the ground-state polaron binding energy and effective mass in step and asymmetric single QW"s are studied as due to the interface optical phonons, confined bulklike LO and half-space LO phonons. The full energy spectrum is included in our calculations. The effects of the finite electronic confinement potential and the subband nonparabolicity are also considered. The relative importance of the different phonon modes is analyzed. By means of the modified LLP variational method, the binding energy of a polaron confined to asymmetric single QW's is also investigated. Our results show that in ordinary asymmetric QW"s, the asymmetry of the QW's has a significant influence on the polaron effect, which has a close relationship to the interface phonon dispersion. When the well width and one side barrier height of asymmetric single QW"s are fixed and identical with those of symmetric QW's, the polaron binding energy in asymmetric QW"s is always smaller than that in symmetric QW's. We have also found that it is necessary to include the continuum energy spectrum as intermediate states in the perturbation calculations in order to obtain the correct results; the subband nonparabolicity has a small influence on the polaron effect. Comparing our results obtained by using two different methods, good agreement is found.

  18. Blue and green electroluminescence from CdSe nanocrystal quantum-dot-quantum-wells

    SciTech Connect

    Lu, Y. F.; Cao, X. A.

    2014-11-17

    CdS/CdSe/ZnS quantum dot quantum well (QDQW) nanocrystals were synthesized using the successive ion layer adsorption and reaction technique, and their optical properties were tuned by bandgap and strain engineering. 3-monolayer (ML) CdSe QWs emitted blue photoluminescence at 467 nm with a spectral full-width-at-half-maximum of ∼30 nm. With a 3 ML ZnS cladding layer, which also acts as a passivating and strain-compensating layer, the QDQWs acquired a ∼35% quantum yield of the QW emission. Blue and green electroluminescence (EL) was obtained from QDQW light-emitting devices with 3–4.5 ML CdSe QWs. It was found that as the peak blueshifted, the overall EL was increasingly dominated by defect state emission due to poor hole injection into the QDQWs. The weak EL was also attributed to strong field-induced charge separation resulting from the unique QDQW geometry, weakening the oscillator strength of optical transitions.

  19. MOCVD growth of AlGaN UV LEDs

    SciTech Connect

    Han, J.; Crawford, M.H.

    1998-09-01

    Issues related to the MOCVD growth of AlGaN, specifically the gas-phase parasitic reactions among TMG, TMA, and NH{sub 3}, are studied using an in-situ optical reflectometer. It is observed that the presence of the well-known gas phase adduct (TMA: NH{sub 3}) could seriously hinder the incorporation behavior of TMGa. Relatively low reactor pressures (30--50 Torr) are employed to grow an AlGaN/GaN SCH QW p-n diode structure. The UV emission at 360 nm (FWHM {approximately} 10 nm) represents the first report of LED operation from an indium-free GaN QW diode.

  20. Quantum Hall effect in HgTe quantum wells at nitrogen temperatures

    SciTech Connect

    Kozlov, D. A. Kvon, Z. D.; Mikhailov, N. N.; Dvoretskii, S. A.; Weishäupl, S.; Krupko, Y.; Portal, J.-C.

    2014-09-29

    We report on the observation of quantized Hall plateaus in a system of two-dimensional Dirac fermions, implemented in a 6.6 nm HgTe quantum well at magnetic fields up to 34 T at nitrogen temperatures. The activation energies determined from the temperature dependence of the longitudinal resistivity are found to be almost equal for the filling factors ν of 1 and 2. This indicates that the large values of the g-factor (about 30–40) remain unchanged at very strong magnetic fields.

  1. QUANTUM WELL THERMOELECTRICS FOR CONVERTING WASTE HEAT TO ELECTRICITY

    SciTech Connect

    Saeid Ghamaty; Sal Marchetti

    2005-03-03

    New thermoelectric materials using Quantum Well (QW) technology are expected to increase the energy conversion efficiency to more than 25% from the present 5%, which will allow for the low cost conversion of waste heat into electricity. Hi-Z Technology, Inc. has been developing QW technology over the past six years. It will use Caterpillar, Inc., a leader in the manufacture of large scale industrial equipment, for verification and life testing of the QW films and modules. Other members of the team are Pacific Northwest National Laboratory, who will sputter large area QW films. The Scope of Work is to develop QW materials from their present proof-of-principle technology status to a pre-production level over a proposed three year period. This work will entail fabricating the QW films through a sputtering process of 50 {micro}m thick multi layered films and depositing them on 12 inch diameter, 5 {micro}m thick Si substrates. The goal in this project is to produce a basic 10-20 watt module that can be used to build up any size generator such as: a 5-10 kW Auxiliary Power Unit (APU), a multi kW Waste Heat Recovery Generator (WHRG) for a class 8 truck or as small as a 10-20 watt unit that would fit on a daily used wood fired stove and allow some of the estimated 2-3 billion people on earth, who have no electricity, to recharge batteries (such as a cell phone) or directly power radios, TVs, computers and other low powered devices.

  2. Multispectral Detector Based on Array of Carbon-Nanotube Quantum Wells

    DTIC Science & Technology

    2009-09-30

    2006-Mar 2009 4. TITLE AND SUBTITLE MULTISPECTRAL DETECTOR BASED ON AN ARRAY OF CARBON- NANOTUBE QUANTUM WELLS 5. FUNDING NUMBERS FA9550-06-1-0366...carbon nanotube quantum wells exposed to external weak THz fields. Each of the individual well in the array had been independently controlled by a dc...the intrinsic noises considerably. 14. SUBJECT TERMS 15. NUMBER OF PAGES 23 THz field nanosensors, carbon nanotube quantum wells, Luttinger

  3. Broadband InGaAs quantum dot-in-a-well solar cells of p-type wells

    NASA Astrophysics Data System (ADS)

    Tzeng, T. E.; Chuang, K. Y.; Lay, T. S.; Chang, C. H.

    2013-09-01

    Broadband InxGa1-xAs quantum dot-in-a-well (DWell) solar cells are grown by stacking layers of composition-tailored InxGa1-xAs (x=1, 0.75, and 0.65) quantum dots on p-type In0.1Ga0.9As quantum wells (QWs). Doping concentration and growth temperature for the Be-doped quantum wells are optimized to enhance the conversion efficiency (η). The broadband DWell solar cell of Be: 2×1017 cm-3 QWs grown at 570 °C shows the best photovoltaic characteristics of η=10.86%, which is 3% higher than that of the GaAs baseline solar cell.

  4. Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier

    NASA Astrophysics Data System (ADS)

    Jia, Chuanyu; Yu, Tongjun; Feng, Xiaohui; Wang, Kun; Zhang, Guoyi

    2016-09-01

    The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL.

  5. The energy-level crossing behavior and quantum Fisher information in a quantum well with spin-orbit coupling

    PubMed Central

    Wang, Z. H.; Zheng, Q.; Wang, Xiaoguang; Li, Yong

    2016-01-01

    We study the energy-level crossing behavior in a two-dimensional quantum well with the Rashba and Dresselhaus spin-orbit couplings (SOCs). By mapping the SOC Hamiltonian onto an anisotropic Rabi model, we obtain the approximate ground state and its quantum Fisher information (QFI) via performing a unitary transformation. We find that the energy-level crossing can occur in the quantum well system within the available parameters rather than in cavity and circuit quantum eletrodynamics systems. Furthermore, the influence of two kinds of SOCs on the QFI is investigated and an intuitive explanation from the viewpoint of the stationary perturbation theory is given. PMID:26931762

  6. The energy-level crossing behavior and quantum Fisher information in a quantum well with spin-orbit coupling.

    PubMed

    Wang, Z H; Zheng, Q; Wang, Xiaoguang; Li, Yong

    2016-03-02

    We study the energy-level crossing behavior in a two-dimensional quantum well with the Rashba and Dresselhaus spin-orbit couplings (SOCs). By mapping the SOC Hamiltonian onto an anisotropic Rabi model, we obtain the approximate ground state and its quantum Fisher information (QFI) via performing a unitary transformation. We find that the energy-level crossing can occur in the quantum well system within the available parameters rather than in cavity and circuit quantum eletrodynamics systems. Furthermore, the influence of two kinds of SOCs on the QFI is investigated and an intuitive explanation from the viewpoint of the stationary perturbation theory is given.

  7. Picosecond intersubband hole relaxation in p-type quantum wells

    SciTech Connect

    Xu, Z.; Fauchet, P.M.; Rella, C.W.; Schwettman, H.A.

    1995-12-31

    We report the first direct measurement of the relaxation time of holes in p-type quantum wells using tunable, subpicosecond mid-infrared laser pulses in a pump-probe arrangement. The QW layers consisted of 50 In{sub 0.5}Ga{sub 0.5}As/Al{sub 0.5}Ga{sub 0.5}As periods. The In{sub 0.5}Ga{sub 0.5}As well was 4 nm wide and the Al{sub 0.5}Ga{sub 0.5}As barrier was 8 nm wide. The dopant concentration was 10{sup 19} CM{sup -3} which corresponds to a sheet density of 1.2 x 10{sup 13} CM{sup -2}. The room temperature IR spectrum showed a 50 meV wide absorption peak at 5.25 {mu}m (220 meV). This energy agrees with the calculated n=1 heavy hole to n=1 light hole transition energy of 240 meV (150 meV for strain and 90 meV for confinement). The large absorption width results from hole-hole scattering and the difference in dispersion relations between the two subbands. The equal-wavelength pump-probe transmission measurements were performed using the Stanford free electron laser (FEL). The FEL pulses were tuned between 4 and 6 {mu} m and their duration was less than 1 ps. The measurements were performed as a function of temperature, pump wavelength and intensity (from 0.3 to 10 GW/cm{sup 2}). In all our experiments, we find an increase of transmission (decrease of absorption or bleaching) following photopumping, which recovers as a single exponential with a time constant (relaxation time) of the order of 1 picosecond. The maximum change in transmission is linear with pump 2 intensity below 1 GW/cm{sup 2} and saturates to {approximately}3% with a saturation intensity I{sub sat} of 3 GW/cm{sup 2}. As the saturation regime is entered, the relaxation time increases from 0.8 ps to 1.8 ps. This relaxation time depends on the temperature T: it increases from 0.8 ps to 1.3 ps as T decreases from 300 K to 77 K. Finally, when we tune the laser through the absorption band, the magnitude of the signal changes but its temporal behavior does not change, within the accuracy of the measurements.

  8. Intermediate band solar cells based on indium arsenide quantum dots embedded in indium gallium arsenide quantum well

    NASA Astrophysics Data System (ADS)

    Vasan, Ramesh

    Intermediate band solar cells based on quantum dots and quantum wells with anti-reflection coating are investigated in this thesis. The demand for high efficient solar cells as an alternate source of energy is the main motivation for this research project. Intermediate band solar cells based on quantum dots were the subject of intensive research in recent years. High power conversion efficiency was predicted from InAs/GaAs intermediate band solar cells as the presence of InAs quantum dots increased the absorption below the band gap of the host material. In this thesis, an attempt has been made to further increase the absorption of GaAs solar cells by embedding InAs quantum dots in InxGa 1-xAs quantum wells. The quantum efficiency and spectral response measurements of quantum dots embedded in quantum well devices exhibit an extended response till 1280 nm in the near infrared region of the electromagnetic spectrum. The interband transition peaks associated with the InxGa 1-xAs quantum well exhibit a red shift as In mole fraction (x) in In xGa1-xAs quantum well is increased above 0%. The short circuit current density increased, while open circuit voltage decreased, as x is increased. In addition, the use of inexpensive anti-reflection coating (ARC) on these intermediate band solar cells has been studied. Anti-reflection coating based on Zinc oxide (ZnO) has significantly improved the power conversion efficiency of the solar cells. The ZnO synthesized using sol-gel technique was spin coated on the solar cells and subsequently annealed. The short circuit current density was significantly increased after the deposition of the ARC. Enhancement of the order of 42 % in the power conversion efficiency was obtained. Around 43% enhancement in quantum efficiency and 44% enhancement in spectral response measurements were also observed.

  9. Universal logic gates for quantum-dot electron-spin qubits using trapped quantum-well exciton polaritons

    NASA Astrophysics Data System (ADS)

    Puri, Shruti; McMahon, Peter L.; Yamamoto, Yoshihisa

    2017-03-01

    In this paper we introduce and analyze a system design for quantum-dot-based qubits that simultaneously supports scalable one-qubit and two-qubit gates, and single-shot qubit measurement. All three key processes (one-qubit gates, two-qubit gates, and qubit measurement) rely on the interaction between the electron in each quantum dot and exciton polaritons formed in a quantum well situated near the quantum dots. A key feature of our proposed system is the use of polariton traps, which we show enhances the quantum-dot-quantum-well interaction by a factor of 10 and consequently results in 100 × faster two-qubit gates. We also introduce a one-qubit gate that is based on a combination of optical and microwave control, which is supported in the same device and system configuration as the other operations, in contrast to the conventional one-qubit gate that is based on all-optical control.

  10. Plasmon-excitonic scattering of light from a nanoparticle located near a quantum well

    NASA Astrophysics Data System (ADS)

    Kosobukin, V. A.

    2015-07-01

    A solution is presented for the problem of resonant elastic scattering of polarized light from a nanoparticle and a quantum well located near semiconductor surface. Coupling between surface plasmons of the metal particle and quasi-2D excitons of the quantum well is taken into account. The problem is solved by the Green's functions technique treating the resonant polarization response of particle and quantum well in a self-consistent approximation. The effective polarizability is found for a metal nanoparticle of ellipsoidal shape with account of dynamical effect of "image" charges caused by semiconductor surface and quantum well. Spectra are numerically calculated for a model structure "metal-semiconductor" including a silver nanoparticle and a quantum well AlGaAs/GaAs. Appearance of exciton-plasmon interaction in the resonant scattering of light is interpreted as an enhancement by surface plasmons of the optical response due to quantum-well quasi-2D excitons.

  11. Minimized open-circuit voltage reduction in GaAs/InGaAs quantum well solar cells with bandgap-engineered graded quantum well depths

    SciTech Connect

    Li, Xiaohan; Dasika, Vaishno D.; Li, Ping-Chun; Ji, Li; Bank, Seth R.; Yu, Edward T.

    2014-09-22

    The use of InGaAs quantum wells with composition graded across the intrinsic region to increase open-circuit voltage in p-i-n GaAs/InGaAs quantum well solar cells is demonstrated and analyzed. By engineering the band-edge energy profile to reduce photo-generated carrier concentration in the quantum wells at high forward bias, simultaneous increases in both open-circuit voltage and short-circuit current density are achieved, compared to those for a structure with the same average In concentration, but constant rather than graded quantum well composition across the intrinsic region. This approach is combined with light trapping to further increase short-circuit current density.

  12. AlGaAs-GaAs quantum-well lasers for direct solar photopumping

    NASA Technical Reports Server (NTRS)

    Unnikrishnan, Sreenath; Anderson, Neal G.

    1991-01-01

    The paper theoretically examines the solar power requirements for low-threshold AlGaAs-GaAs quantum-well lasers directly photopumped by focused sunlight. A model of separate-confinement quantum-well-heterostructure (SCQWH) lasers was developed, which explicitly treats absorption and transport phenomena relevant to solar pumping. The model was used to identify separate-confinement single-quantum-well laser structures which should operate at photoexcitation intensities of less than 10,000 suns.

  13. QUANTUM WELL THERMOELECTRICS FOR CONVERTING WASTE HEAT TO ELECTRICITY

    SciTech Connect

    Saeid Ghamaty

    2006-03-31

    New thermoelectric materials using Quantum Well (QW) technology are expected to increase the energy conversion efficiency to more than 25% from the present 5%, which will allow for the low cost conversion of waste heat into electricity. Hi-Z Technology, Inc. has been developing QW technology over the past six years. It will use Caterpillar, Inc., a leader in the manufacture of large scale industrial equipment, for verification and life testing of the QW films and modules. Other members of the team are Pacific Northwest National Laboratory, who will sputter large area QW films. The Scope of Work is to develop QW materials from their present proof-of-principle technology status to a pre-production level over a proposed three year period. This work will entail fabricating the QW films through a sputtering process of 50 {micro}m thick multi layered films and depositing them on 12 inch diameter, 5 {micro}m thick Si substrates. The goal in this project is to produce the technology for fabricating a basic 10-20 watt module that can be used to build up any size generator such as: a 5-10 kW Auxiliary Power Unit (APU), a multi kW Waste Heat Recovery Generator (WHRG) for a class 8 truck or as small as a 10-20 watt unit that would fit on a daily used wood fired stove and allow some of the estimated 2-3 billion people on earth, who have no electricity, to recharge batteries (such as a cell phone) or directly power radios, TVs, computers and other low powered devices. In this quarter Hi-Z has continued fabrication of the QW films and also continued development of joining techniques for fabricating the N and P legs into a couple. The upper operating temperature limit for these films is unknown and will be determined via the isothermal aging studies that are in progress. We are reporting on these studies in this report. The properties of the QW films that are being evaluated are Seebeck, thermal conductivity and thermal-to-electricity conversion efficiency.

  14. QUANTUM WELL THERMOELECTRICS FOR CONVERTING WASTE HEAT TO ELECTRICITY

    SciTech Connect

    Saeid Ghamaty

    2006-02-01

    New thermoelectric materials using Quantum Well (QW) technology are expected to increase the energy conversion efficiency to more than 25% from the present 5%, which will allow for the low cost conversion of waste heat into electricity. Hi-Z Technology, Inc. has been developing QW technology over the past six years. It will use Caterpillar, Inc., a leader in the manufacture of large scale industrial equipment, for verification and life testing of the QW films and modules. Other members of the team are Pacific Northwest National Laboratory, who will sputter large area QW films. The Scope of Work is to develop QW materials from their present proof-of-principle technology status to a pre-production level over a proposed three year period. This work will entail fabricating the QW films through a sputtering process of 50 {micro}m thick multi layered films and depositing them on 12 inch diameter, 5 {micro}m thick Si substrates. The goal in this project is to produce the technology for fabricating a basic 10-20 watt module that can be used to build up any size generator such as: a 5-10 kW Auxiliary Power Unit (APU), a multi kW Waste Heat Recovery Generator (WHRG) for a class 8 truck or as small as a 10-20 watt unit that would fit on a daily used wood fired stove and allow some of the estimated 2-3 billion people on earth, who have no electricity, to recharge batteries (such as a cell phone) or directly power radios, TVs, computers and other low powered devices. In this quarter Hi-Z has continued fabrication of the QW films and also continued development of joining techniques for fabricating the N and P legs into a couple. The upper operating temperature limit for these films is unknown and will be determined via the isothermal aging studies that are in progress. We are reporting on these studies in this report. The properties of the QW films that are being evaluated are Seebeck, thermal conductivity and thermal-to-electricity conversion efficiency.

  15. Strong coupling and polariton lasing in Te based microcavities embedding (Cd,Zn)Te quantum wells

    SciTech Connect

    Rousset, J.-G. Piętka, B.; Król, M.; Mirek, R.; Lekenta, K.; Szczytko, J.; Borysiuk, J.; Suffczyński, J.; Kazimierczuk, T.; Goryca, M.; Smoleński, T.; Kossacki, P.; Nawrocki, M.; Pacuski, W.

    2015-11-16

    We report on properties of an optical microcavity based on (Cd,Zn,Mg)Te layers and embedding (Cd,Zn)Te quantum wells. The key point of the structure design is the lattice matching of the whole structure to MgTe, which eliminates the internal strain and allows one to embed an arbitrary number of unstrained quantum wells in the microcavity. We evidence the strong light-matter coupling regime already for the structure containing a single quantum well. Embedding four unstrained quantum wells results in further enhancement of the exciton-photon coupling and the polariton lasing in the strong coupling regime.

  16. Dynamic light-matter coupling across multiple spatial dimensions in a quantum dots-in-a-well heterostructure

    SciTech Connect

    Prasankumar, Rohit P; Taylor, Antoinette J

    2009-01-01

    Ultrafast density-dependent optical spectroscopic measurements on a quantum dots-in-a-well heterostructure reveal several distinctive phenomena, most notably a strong coupling between the quantum well population and light absorption at the quantum dot excited state.

  17. Transversal confined polar optical phonons in spherical quantum-dot/quantum-well nanostructures

    NASA Astrophysics Data System (ADS)

    Comas, F.; Trallero-Giner, C.; Prado, S. J.; Marques, G. E.; Roca, E.

    2006-02-01

    Confined polar optical phonons are studied in a spherical quantum-dot/quantum-well (QD/QW) nanostructure by using an approach that takes into account the coupling of electromechanical oscillations and is valid in the long-wave limit. This approach was developed a few years ago and provides results beyond the usually applied dielectric continuum approach (DCA), where just the electric aspect of the oscillations is considered. In the present paper we limit ourselves to the study of the so-called uncoupled modes, having a purely transversal character and not involving an electric potential. We display the dispersion curves for the frequencies considering three possible nanostructures, which show different bulk phonon curvatures near the Brillouin zone -point and have been actually grown: ZnS/CdSe, CdSe/CdS and CdS/HgS. A detailed discussion of the results obtained is made, emphasizing the novelties provided by our treatment and the relevance of infrared spectroscopy in the characterization of the geometrical features of the QD/QW nanostructure.

  18. Colloidal Spherical Quantum Wells with Near-Unity Photoluminescence Quantum Yield and Suppressed Blinking.

    PubMed

    Jeong, Byeong Guk; Park, Young-Shin; Chang, Jun Hyuk; Cho, Ikjun; Kim, Jai Kyeong; Kim, Heesuk; Char, Kookheon; Cho, Jinhan; Klimov, Victor I; Park, Philip; Lee, Doh C; Bae, Wan Ki

    2016-10-02

    Thick inorganic shell endows colloidal nanocrystals (NCs) with enhanced photochemical stability and suppression of photoluminescence intermittency (also known as blinking). However, the progress of using thick-shell heterostructure NCs in applications has been limited, due to low photoluminescence quantum yield (PL QY  60%) at room temperature. Here, we demonstrate thick-shell NCs with CdS/CdSe/CdS seed/spherical quantum well/shell (SQW) geometry that exhibit near-unity PL QY at room temperature and suppression of blinking. In SQW NCs, the lattice mismatch is diminished between the emissive CdSe layer and the surrounding CdS layers as a result of coherent strain, which suppresses the formation of misfit defects and consequently permits ~ 100% PL QY for SQW NCs with thick CdS shell (≥ 5 nm). High PL QY of thick-shell SQW NCs are preserved even in concentrated dispersion and in film under thermal stress, which makes them promising candidates for applications in solid-state lightings and luminescent solar concentrators.

  19. Enhancement of carrier lifetimes in type-II quantum dot/quantum well hybrid structures

    NASA Astrophysics Data System (ADS)

    Couto, O. D. D.; de Almeida, P. T.; dos Santos, G. E.; Balanta, M. A. G.; Andriolo, H. F.; Brum, J. A.; Brasil, M. J. S. P.; Iikawa, F.; Liang, B. L.; Huffaker, D. L.

    2016-08-01

    We investigate optical transitions and carrier dynamics in hybrid structures containing type-I GaAs/AlGaAs quantum wells (QWs) and type-II GaSb/AlGaAs quantum dots (QDs). We show that the optical recombination of photocreated electrons confined in the QWs with holes in the QDs and wetting layer can be modified according to the QW/QD spatial separation. In particular, for low spacer thicknesses, the QW optical emission can be suppressed due to the transference of holes from the QW to the GaSb layer, favoring the optical recombination of spatially separated carriers, which can be useful for optical memory and solar cell applications. Time-resolved photoluminescence (PL) measurements reveal non-exponential recombination dynamics. We demonstrate that the PL transients can only be quantitatively described by considering both linear and quadratic terms of the carrier density in the bimolecular recombination approximation for type-II semiconductor nanostructures. We extract long exciton lifetimes from 700 ns to 5 μs for QDs depending on the spacer layer thickness.

  20. Carrier density dependence of plasmon-enhanced nonradiative energy transfer in a hybrid quantum well-quantum dot structure.

    PubMed

    Higgins, L J; Karanikolas, V D; Marocico, C A; Bell, A P; Sadler, T C; Parbrook, P J; Bradley, A L

    2015-01-26

    An array of Ag nanoboxes fabricated by helium-ion lithography is used to demonstrate plasmon-enhanced nonradiative energy transfer in a hybrid quantum well-quantum dot structure. The nonradiative energy transfer, from an InGaN/GaN quantum well to CdSe/ZnS nanocrystal quantum dots embedded in an ~80 nm layer of PMMA, is investigated over a range of carrier densities within the quantum well. The plasmon-enhanced energy transfer efficiency is found to be independent of the carrier density, with an efficiency of 25% reported. The dependence on carrier density is observed to be the same as for conventional nonradiative energy transfer. The plasmon-coupled energy transfer enhances the QD emission by 58%. However, due to photoluminescence quenching effects an overall increase in the QD emission of 16% is observed.

  1. Internal quantum efficiency enhancement of GaInN/GaN quantum-well structures using Ag nanoparticles

    SciTech Connect

    Iida, Daisuke; Fadil, Ahmed Ou, Yiyu; Kopylov, Oleksii; Ou, Haiyan; Chen, Yuntian; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu

    2015-09-15

    We report internal quantum efficiency enhancement of thin p-GaN green quantum-well structure using self-assembled Ag nanoparticles. Temperature dependent photoluminescence measurements are conducted to determine the internal quantum efficiency. The impact of excitation power density on the enhancement factor is investigated. We obtain an internal quantum efficiency enhancement by a factor of 2.3 at 756 W/cm{sup 2}, and a factor of 8.1 at 1 W/cm{sup 2}. A Purcell enhancement up to a factor of 26 is estimated by fitting the experimental results to a theoretical model for the efficiency enhancement factor.

  2. Quantum evolution in the regime of quantum wells in a semiclassical island with artificial interface conditions

    SciTech Connect

    Mantile, Andrea

    2014-09-15

    We introduce a modified Schrödinger operator where the semiclassical Laplacian is perturbed by artificial interface conditions occurring at the boundaries of the potential's support. The corresponding dynamics is analyzed in the regime of quantum wells in a semiclassical island. Under a suitable energy constraint for the initial states, we show that the time propagator is stable with respect to the non-self-adjont perturbation, provided that this is parametrized through infinitesimal functions of the semiclassical parameter “h.” It has been recently shown that h-dependent artificial interface conditions allow a new approach to the adiabatic evolution problem for the shape resonances in models of resonant heterostructures. Our aim is to provide with a rigorous justification of this method.

  3. Observation of the Quantum Well Interference in Magnetic Nanostructures by Photoemission

    SciTech Connect

    Kawakami, R.K.; Escorcia-Aparicio, E.J.; Choi, H.J.; Qiu, Z.Q.; Rotenberg, E.; Smith, N.V.; Cummins, T.R.; Tobin, J.G.

    1998-02-01

    The Cu/Co/Ni/Co(100) system was investigated by photoemission to study the interference between the Cu quantum well and the Ni layer. By varying their separation, we found that the density of states of the Cu quantum well states were biperiodically modulated. This result provides clear evidence for the quantum interference between two quantum wells in magnetic nanostructures. The biperiodicity was identified to correspond to the two Fermi vectors of the Co minority energy bands. {copyright} {ital 1998} {ital The American Physical Society}

  4. Helicity-dependent photocurrent in a (110) GaAs quantum well stack

    NASA Astrophysics Data System (ADS)

    Schmadel, D. C.; Kim, M.-H.; Sushkov, A. B.; Jenkins, G. S.; Koralek, J. D.; Moore, J. E.; Orenstein, J.; Ohno, Yuzo; Ohno, Hideo; Drew, H. D.

    2013-03-01

    There have been many reports on the circular photogalvanic effect (CPGE) in GaAs quantum wells. A recent theoretical study suggests that the CPGE can be governed by a quantum confinement-induced Berry phase effect that depends only on the quantum-well width and crystal orientation (J.E. Moore, Phys. Rev. Lett. 2010). We have measured the photocurrent in a (110)-oriented GaAs quantum well stack under illumination of circularly polarized THz radiation. We will report measurements of the helicity-driven photocurrent as a function of frequency, polarization, angle of incident, and temperature, and compare with theoretical predictions of the Berry phase contribution.

  5. Photoexcited escape probability, optical gain, and noise in quantum well infrared photodetectors

    NASA Technical Reports Server (NTRS)

    Levine, B. F.; Zussman, A.; Gunapala, S. D.; Asom, M. T.; Kuo, J. M.; Hobson, W. S.

    1992-01-01

    We present a detailed and thorough study of a wide variety of quantum well infrared photodetectors (QWIPs), which were chosen to have large differences in their optical and transport properties. Both n- and p-doped QWIPs, as well as intersubband transitions based on photoexcitation from bound-to-bound, bound-to-quasi-continuum, and bound-to-continuum quantum well states were investigated. The measurements and theoretical analysis included optical absorption, responsivity, dark current, current noise, optical gain, hot carrier mean free path; net quantum efficiency, quantum well escape probability, quantum well escape time, as well as detectivity. These results allow a better understanding of the optical and transport physics and thus a better optimization of the QWIP performance.

  6. Numerical Modeling of Two-Terminal Quantum Well Devices

    DTIC Science & Technology

    1989-04-17

    double barrier is in the WKB approximation (see Bohm; Quantum Theory, p. 286 [14c]) I ko (x)dx = (n+1/2)it (27b) Exact solutions that incorporate...probability current. It is useful to recall that the formal steps leading to the WKB approximation [14f] involves the same philosophy, but instead of solving...34/S’) 2-2(S"’/S’)] (29) As discussed by Messiah [14f], the above equation is rigorously equivalent to Schrodinger’s equation. However, in the WKB

  7. The Double-Well Potential in Quantum Mechanics: A Simple, Numerically Exact Formulation

    ERIC Educational Resources Information Center

    Jelic, V.; Marsiglio, F.

    2012-01-01

    The double-well potential is arguably one of the most important potentials in quantum mechanics, because the solution contains the notion of a state as a linear superposition of "classical" states, a concept which has become very important in quantum information theory. It is therefore desirable to have solutions to simple double-well potentials…

  8. An observation of direct-gap electroluminescence in GaAs structures with Ge quantum wells

    SciTech Connect

    Aleshkin, V. Ya.; Dikareva, N. V.; Dubinov, A. A.; Zvonkov, B. N.; Kudryavtsev, K. E.; Nekorkin, S. M.

    2015-02-15

    A light-emitting diode structure based on GaAs with eight narrow Ge quantum wells is grown by laser sputtering. An electroluminescence line polarized predominately in the plane parallel to the constituent layers of the structure is revealed. The line corresponds to the direct optical transitions in momentum space in the Ge quantum wells.

  9. Excitonic luminescence of SiGe/Si quantum wells δ-doped with boron

    SciTech Connect

    Bagaev, V. S.; Nikolaev, S. N.; Onishchenko, E. E.; Pruchkina, A. A.; Krivobok, V. S.; Novikov, A. V.

    2015-05-14

    Low-temperature photoluminescence of undoped and moderately δ-doped Si{sub 1−x}Ge{sub x}/Si (x < 0.1) quantum wells has been studied. The influence of boron δ-layer on the excitonic luminescence and the luminescence caused by a dense electron plasma was demonstrated. The conditions under which the luminescence spectra of quantum wells are dominated by impurity-bound excitons (BE) have been established. Some unusual properties of these BE are explained in terms of type II band-offset in Si{sub 1−x}Ge{sub x}/Si (x < 0.1) quantum wells, which favors a spatial separation of electrons and holes. It is shown that the temperature dependence of an excitonic emission in the quantum wells allows to calculate the BE-related density of states and, thus, can be used for contactless estimation of the impurity concentration in quantum wells.

  10. Designs of blue and green light-emitting diodes based on type-II InGaN-ZnGeN2 quantum wells

    NASA Astrophysics Data System (ADS)

    Han, Lu; Kash, Kathleen; Zhao, Hongping

    2016-09-01

    Type-II InGaN-ZnGeN2 quantum wells (QWs) are studied as improved active regions for light-emitting diodes emitting in the blue (λ ˜ 485 nm) and green (λ ˜ 530 nm) spectral ranges. Both the energy band gap and the lattice parameters of ZnGeN2 are very close to those of GaN. The recently predicted large band offset between GaN and ZnGeN2 allows the formation of a type-II InGaN-ZnGeN2 heterostructure. The strong confinement of holes in the ZnGeN2 layer allows the use of a lower In-content InGaN QW to extend the emission wavelength into the blue and green wavelength regions, as compared to the traditional InGaN QW with uniform In content. In the type-II InGaN-ZnGeN2 QW designs, a thin AlGaN layer was used as a barrier for better carrier confinement. The type-II InGaN-ZnGeN2 QWs lead to a significant enhancement of the electron-hole wave function overlap as compared to those of the conventional QWs. Simulation studies of the proposed type-II QWs promise a significant enhancement of the spontaneous emission rate by 6.1-7.2 times for the QW design emitting at the blue wavelength region and 4.6-4.9 times for the QW design emitting at the green wavelength region, as compared to the conventional InGaN QWs emitting at the same wavelengths.

  11. Spilling of electronic states in Pb quantum wells

    NASA Astrophysics Data System (ADS)

    Jałochowski, M.; Palotás, K.; Krawiec, M.

    2016-01-01

    Energy-dependent apparent step heights of two-dimensional ultrathin Pb islands grown on the Si(111)6 ×6 -Au surface have been investigated by a combination of scanning tunneling microscopy, first-principles density-functional theory, and the particle-in-a-box model calculations. The apparent step height shows the thickness- and energy-dependent oscillatory behaviors, which are directly related to the spilling of electron states into the vacuum exhibiting a quantum size effect. This has been unambiguously proven by extensive first-principles scanning tunneling microscopy and spectroscopy simulations. An electronic contribution to the apparent step height is directly determined. At certain energies it reaches values as high as a half of the atomic contribution. The applicability of the particle-in-a-box model to the spilling of electron states is also discussed.

  12. Quantum-well intermixing for the control of second-order nonlinear effects in AlGaAs multiple-quantum-well waveguides.

    PubMed

    Street, M W; Whitbread, N D; Hutchings, D C; Arnold, J M; Marsh, J H; Aitchison, J S; Kennedy, G T; Sibbett, W

    1997-11-01

    We present experimental evidence to demonstrate the feasibility of a promising new quasi-phase-matching technique in AlGaAs multiple-quantum-well waveguides. Non-phase-matched second-harmonic-generation measurements indicate that, for sub-half-bandgap excitation near 1.5 microm , quantum-well intermixing by impurity-free vacancy disordering results in a reduction of the nonlinear susceptibility chi((2))(zxy) (~340 pm/V) by 17%. Relatively low intermixed waveguide losses, and the high spatial resolution of the impurity-free vacancy disordering process, suggest that periodic intermixing along the direction of propagation should lead to useful frequency-conversion efficiencies.

  13. Quantum-well detector concept for hyperspectral coregistered full Stokes vector detection

    NASA Astrophysics Data System (ADS)

    Serna, Mario

    2002-09-01

    By layering quantum well stacks separated by partially transmissive linear gratings, similar to a multi-color QWIP, one may be able to detect the full Stokes vector at a single pixel. Such a detector would greatly aid polarization-based automated algorithms to detect targets from earth-gazing platforms. We report results from a theoretical calculation of normally incident infrared light absorbed by quantum wells in an eight-layer quantum-well/grating structure. The structure consists of four quantum-well stacks, of 50 quantum wells each, separated by contact layers and lamellar gratings. The gratings following the first three quantum well stacks are formed by perfectly conducting rectangular strips separated by a transparent dielectric that allows some light to be transmitted. The top grating, following the fourth quantum well stack, is completely reflective. Each of the four lamellar gratings is oriented at a different angle. Incident radiation is diffracted and reflected to different orders and at different angles at each of the four gratings. The model is based on a uniaxial-optics transfer-matrix technique. We calculate the energy absorbed by each of the layers. This in turn allows one to predict and compare which layers will respond for partially- and fully-polarized incident light of either linear or circular polarization.

  14. Anisotropic emission and photon-recycling in strain-balanced quantum well solar cells

    SciTech Connect

    Cabrera, C. I.; Enciso, A.; Contreras-Solorio, D. A.; Hernandez, L.; Connolly, J. P.

    2014-04-28

    Strain-balanced quantum well solar cells (SB-QWSCs) extend the photon absorption edge beyond that of bulk GaAs by incorporation of quantum wells in the i-region of a p–i–n device. Anisotropy arises from a splitting of the valence band due to compressive strain in the quantum wells, suppressing a transition which contributes to emission from the edge of the quantum wells. We have studied both the emission light polarized in the plane perpendicular (TM) to the quantum well which couples exclusively to the light hole transition and the emission polarized in the plane of the quantum wells (TE) which couples mainly to the heavy hole transition. It was found that the spontaneous emission rates TM and TE increase when the quantum wells are deeper. The addition of a distributed Bragg reflector can substantially increase the photocurrent while decreasing the radiative recombination current. We have examined the impact of the photon recycling effect on SB-QWSC performance. We have optimized SB-QWSC design to achieve single junction efficiencies above 30%.

  15. Observation of a fractional quantum hall state at nu = 1/4 in a wide GaAs quantum well.

    PubMed

    Luhman, D R; Pan, W; Tsui, D C; Pfeiffer, L N; Baldwin, K W; West, K W

    2008-12-31

    We report the observation of an even-denominator fractional quantum Hall state at nu = 1/4 in a high quality, wide GaAs quantum well. The sample has a quantum well width of 50 nm and an electron density of n(e) = 2.55 x 10(11) cm(-2). We have performed transport measurements at T - 35 mK in magnetic fields up to 45 T. When the sample is perpendicular to the applied magnetic field, the diagonal resistance displays a kink at nu = 1/4. Upon tilting the sample to an angle of theta = 20.3 degrees a clear fractional quantum Hall state emerges at nu = 1/4 with a plateau in the Hall resistance and a strong minimum in the diagonal resistance.

  16. External-field effect on quantum features of radiation emitted by a quantum well in a microcavity

    SciTech Connect

    Sete, Eyob A.; Das, Sumanta; Eleuch, H.

    2011-02-15

    We consider a semiconductor quantum well in a microcavity driven by coherent light and coupled to a squeezed vacuum reservoir. By systematically solving the pertinent quantum Langevin equations in the strong-coupling and low-excitation regimes, we study the effect of exciton-photon detuning, external coherent light, and the squeezed vacuum reservoir on vacuum Rabi splitting and on quantum statistical properties of the light emitted by the quantum well. We show that the exciton-photon detuning leads to a shift in polariton resonance frequencies and a decrease in fluorescence intensity. We also show that the fluorescent light exhibits quadrature squeezing, which predominately depends on the exciton-photon detuning and the degree of the squeezing of the input field.

  17. Microwave spectroscopic observation of distinct electron solid phases in wide quantum wells.

    PubMed

    Hatke, A T; Liu, Yang; Magill, B A; Moon, B H; Engel, L W; Shayegan, M; Pfeiffer, L N; West, K W; Baldwin, K W

    2014-06-20

    In high magnetic fields, two-dimensional electron systems can form a number of phases in which interelectron repulsion plays the central role, since the kinetic energy is frozen out by Landau quantization. These phases include the well-known liquids of the fractional quantum Hall effect, as well as solid phases with broken spatial symmetry and crystalline order. Solids can occur at the low Landau-filling termination of the fractional quantum Hall effect series but also within integer quantum Hall effects. Here we present microwave spectroscopy studies of wide quantum wells that clearly reveal two distinct solid phases, hidden within what in d.c. transport would be the zero diagonal conductivity of an integer quantum-Hall-effect state. Explanation of these solids is not possible with the simple picture of a Wigner solid of ordinary (quasi) electrons or holes.

  18. Room-temperature efficient light detection by amorphous Ge quantum wells

    PubMed Central

    2013-01-01

    In this work, ultrathin amorphous Ge films (2 to 30 nm in thickness) embedded in SiO2 layers were grown by magnetron sputtering and employed as proficient light sensitizer in photodetector devices. A noteworthy modification of the visible photon absorption is evidenced due to quantum confinement effects which cause both a blueshift (from 0.8 to 1.8 eV) in the bandgap and an enhancement (up to three times) in the optical oscillator strength of confined carriers. The reported quantum confinement effects have been exploited to enhance light detection by Ge quantum wells, as demonstrated by photodetectors with an internal quantum efficiency of 70%. PMID:23496870

  19. Enhancement of Radiative Efficiency with Staggered InGaN Quantum Well Light Emitting Diodes

    SciTech Connect

    Tansu, Nelson; Dierolf, Volkmar; Huang, Gensheng; Penn, Samson; Zhao, Hongping; Liu, Guangyu; Li, Xiaohang; Poplawsky, Jonathan

    2011-07-14

    The technology on the large overlap InGaN QWs developed in this program is currently implemented in commercial technology in enhancing the internal quantum efficiency in major LED industry in US and Asia. The scientific finding from this work supported by the DOE enabled the implementation of this step-like staggered quantum well in the commercial LEDs.

  20. Radiation Effects in Nanostructures: Comparison of Proton Irradiation Induced Changes on Quantum Dots and Quantum Wells

    NASA Technical Reports Server (NTRS)

    Leon, R.; Swift, G.; Magness, B.; Taylor, W.; Tang, Y.; Wang, K.; Dowd, P.; Zhang, Y.

    2000-01-01

    Successful implementation of technology using self-forming semiconductor Quantum Dots (QDs) has already demonstrated that temperature independent Dirac-delta density of states can be exploited in low current threshold QD lasers and QD infrared photodetectors.

  1. Electrical measurement of the linewidth of a quantum well bound state

    NASA Astrophysics Data System (ADS)

    Kobos, Z. A.; Noonan, A.; Reed, M. A.

    2017-03-01

    We investigate electron tunneling spectroscopy in the presence of a bound state within a double quantum barrier, single quantum well structure. We demonstrate a new technique to directly measure the intrinsic linewidth of the bound state within the quantum well from the current-voltage signature of the resonant tunneling phenomena and contrast our results with the standing approach in the literature. We then examine the signal behavior for the influence of device temperature and find support for electron-electron interactions within the well. The measured intrinsic bound-state width, ΓE , in the negative differential conductance regime is 1.11 ± 0.01 meV.

  2. Photoconductivity of InGaN/GaN multiple quantum well heterostructures

    NASA Astrophysics Data System (ADS)

    Baranovskiy, M. V.; Glinskii, G. F.

    2013-08-01

    Photocurrent and photoconductivity of InGaN/GaN multiple quantum well heterostructures as a function of applied reverse bias is investigated. Optical excitation was carried out in blue and violet regions of the spectrum, and temperature was ranging from 10 to 300 K. We observed characteristic features related to consequently moving space charge boundary through the quantum wells. For each quantum well there is a range of reverse bias with negative differential conductivity when excited by blue light. Frequency and temperature measurements revealed the presence of at least two different mechanisms that determine the photoconductivity of the structures.

  3. Transport of electrons in a GaAs quantum well in high electric fields

    SciTech Connect

    Pozela, J. Pozela, K.; Raguotis, R.; Juciene, V.

    2009-09-15

    The rates of intrasubband and intersubband scattering of electrons by polar optical and intervalley phonons are determined in relation to the electron energy and width of a deep rectangular quantum well in GaAs. The Monte Carlo method was used to calculate the field dependences of the electron's drift velocity in quantum wells with the width of 10, 20, and 30 nm. It is shown that the drift velocity in high electric fields in a quantum well vastly exceeds the maximum drift's saturation velocity in the bulk material.

  4. Development of GaN/AlGaN Terahertz Quantum Cascade Laser

    DTIC Science & Technology

    2008-11-19

    AFOSR-Taiwan Nanoscience Initiative Project Final Report Project Title Development of GaN /AlGaN Terahertz Quantum Cascade Laser...DATES COVERED 14-06-2007 to 13-06-2008 4. TITLE AND SUBTITLE Development of GaN -Based Terahertz Quantum Cascade Laser 5a. CONTRACT NUMBER...the GaN /AlGaN active region for terahertz quantum cascade lasers using MOCVD system based on the quantum cascade structure proposed by Prof. Greg Sun

  5. Optimizing the multiple quantum well thickness of an InGaN blue light emitting diode

    NASA Astrophysics Data System (ADS)

    Xu, Bing; Zhao, Jun Liang; Wang, Shu Guo; Dai, Hai Tao; Yu, Sheng-Fu; Lin, Ray-Ming; Chu, Fu-Chuan; Huang, Chou-Hsiung; Sun, Xiao Wei

    2013-03-01

    InGaN/GaN blue light emitting diodes with varied quantum well thickness from 2.4 nm to 3.6 nm are fabricated and characterized by atmosphere pressure metalorganic chemical vapor deposition (AP-MOCVD). Experimental results show that the exciton localization effect is enhanced from 21.76 to 23.48 by increasing the quantum well thickness from 2.4 nm to 2.7 nm. However, with the further increase of quantum well thickness, the exciton localization effect becomes weaker. Meanwhile, the peak wavelength of electroluminescence redshift with the increase of well thickness due to the larger quantum confined Stark effect (QCSE). In addition, the efficiency droop can be improved by increasing the well thickness.

  6. GaN/AlGaN Strain-Balanced Heterostructures for Near-IR Quantum Well Photodetectors

    DTIC Science & Technology

    2007-11-02

    DATES COVERED (From – To) 16 September 2002 - 13-Feb-04 5a. CONTRACT NUMBER FA8655-02-M4006 5b. GRANT NUMBER 4. TITLE AND SUBTITLE Gan /Algan Strain...Standard Form 298 (Rev. 8/98) Prescribed by ANSI Std. Z39-18 GaN /AlGaN strain-balanced...and Development (EOARD). In this work GaN /AlGaN strain-balanced heterostructures have been designed for near-infrared absorption through intersubband

  7. Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature.

    PubMed

    Li, K H; Liu, X; Wang, Q; Zhao, S; Mi, Z

    2015-02-01

    Ultraviolet laser radiation has been adopted in a wide range of applications as diverse as water purification, flexible displays, data storage, sterilization, diagnosis and bioagent detection. Success in developing semiconductor-based, compact ultraviolet laser sources, however, has been extremely limited. Here, we report that defect-free disordered AlGaN core-shell nanowire arrays, formed directly on a Si substrate, can be used to achieve highly stable, electrically pumped lasers across the entire ultraviolet AII (UV-AII) band (∼320-340 nm) at low temperatures. The laser threshold is in the range of tens of amps per centimetre squared, which is nearly three orders of magnitude lower than those of previously reported quantum-well lasers. This work also reports the first demonstration of electrically injected AlGaN-based ultraviolet lasers monolithically grown on a Si substrate, and offers a new avenue for achieving semiconductor lasers in the ultraviolet B (UV-B) (280-320 nm) and ultraviolet C (UV-C) (<280 nm) bands.

  8. Vertical transport through AlGaN barriers in heterostructures grown by ammonia molecular beam epitaxy and metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Browne, David A.; Fireman, Micha N.; Mazumder, Baishakhi; Kuritzky, Leah Y.; Wu, Yuh-Renn; Speck, James S.

    2017-02-01

    The results of vertical transport through AlGaN heterobarriers are presented for ammonia molecular beam epitaxy (NH3-MBE) on c-plane GaN on sapphire templates and on m-plane bulk GaN substrates, as well as by metalorganic chemical vapor deposition (MOCVD) on m-plane bulk GaN substrates. Experiments were performed to determine the role of the AlGaN alloy as an effective barrier to vertical transport, which is an essential component of both optoelectronic and power electronic devices. The alloy composition, thickness, and doping levels of the AlGaN layers, as well as substrate orientation, were systematically varied to examine their influence on electron transport. Atom probe tomography (APT) was used to directly determine the alloy composition at the atomic scale to reveal the presence of random alloy fluctuations which provides insight into the nature of the observed transport.

  9. Broadband near-infrared to visible upconversion in quantum dot-quantum well heterostructures (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Teitelboim, Ayelet; Oron, Dan

    2016-09-01

    Upconversion (UC) is a nonlinear process in which two, or more, long wavelength photons are converted to a shorter wavelength photon. This process is based on sequential absorption of two or more photons, involving metastable, long lived intermediate energy states, thus is not restricted to upconversion of coherent laser radiation as a non-coherent process. Hence, requirements for UC processes are long lived excited states, a ladder like arrangement of energy levels and a mechanism inhibiting cooling of the hot charge carrier. UC holds great promise for bioimaging, enabling spatially resolved imaging in a scattering specimen and for photovoltaic devices as a mean to surpass the Shockley-Queisser efficiency limit. Here, we present a novel luminescence upconversion nano-system based on colloidal semiconductor double quantum dots, consisting of a NIR-emitting component and a visible emitting component separated by a tunneling barrier in a spherical onion-like geometry. These dual near-infrared and visible emitting core/shell/shell PbSe/CdSe/CdS nanocrystals are shown to upconvert a broad range of NIR wavelengths to visible emission at room temperature, covering a spectral range where there are practically no alternative upconversion systems. The synthesis is a three-step process, which enables versatility and tunability of both the visible emission color and the NIR absorption edge. Using this method one can achieve a range of desired upconverted emission peak positions with a suitable NIR band gap. The physical mechanism for upconversion in this structure, as well as possible extensions and improvements will be discussed. 1 (1) Teitelboim, A.; Oron, D. ACS Nano 2015, acsnano.5b05329.

  10. High-efficiency blue LEDs with thin AlGaN interlayers in InGaN/GaN MQWs grown on Si (111) substrates

    NASA Astrophysics Data System (ADS)

    Kimura, Shigeya; Yoshida, Hisashi; Ito, Toshihide; Okada, Aoi; Uesugi, Kenjiro; Nunoue, Shinya

    2016-02-01

    We demonstrate high-efficiency blue light-emitting diodes (LEDs) with thin AlGaN interlayers in InGaN/GaN multiquantum wells (MQWs) grown on Si (111) substrates. The peak external quantum efficiency (EQE) ηEQE of 82% at room temperature and the hot/cold factor (HCF) of 94% have been obtained by using the functional thin AlGaN interlayers in the MQWs in addition to reducing threading dislocation densities (TDDs) in the blue LEDs. An HCF is defined as ηEQE(85°C)/ηEQE(25°C). The blue LED structures were grown by metal-organic chemical vapor deposition on Si (111) substrates. The MQWs applied as an active layer have 8- pairs of InGaN/AlyGa1-yN/GaN (0<=y<=1) heterostructures. Thinfilm LEDs were fabricated by removing the Si (111) substrates from the grown layers. It is observed by high-resolution transmission electron microscopy and three-dimensional atom probe analysis that the 1 nm-thick AlyGa1-yN interlayers, whose Al content is y=0.3 or less, are continuously formed. EQE and the HCFs of the LEDs with thin Al0.15Ga0.85N interlayers are enhanced compared with those of the samples without the interlayers in the low-current-density region. We consider that the enhancement is due to both the reduction of the nonradiative recombination centers and the increase of the radiative recombination rate mediated by the strain-induced hole carriers indicated by the simulation of the energy band diagram.

  11. Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

    SciTech Connect

    Malinverni, M. Lamy, J.-M.; Martin, D.; Grandjean, N.; Feltin, E.; Dorsaz, J.; Castiglia, A.; Rossetti, M.; Duelk, M.; Vélez, C.

    2014-12-15

    We demonstrate state-of-the-art p-type (Al)GaN layers deposited at low temperature (740 °C) by ammonia molecular beam epitaxy (NH{sub 3}-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGaN quantum well active region. Typical p-type GaN resistivities and contact resistances are 0.4 Ω cm and 5 × 10{sup −4} Ω cm{sup 2}, respectively. As a test bed, we fabricated a hybrid laser structure emitting at 400 nm combining n-type AlGaN cladding and InGaN active region grown by metal-organic vapor phase epitaxy, with the p-doped waveguide and cladding layers grown by NH{sub 3}-MBE. Single-mode ridge-waveguide LD exhibits a threshold voltage as low as 4.3 V for an 800 × 2 μm{sup 2} ridge dimension and a threshold current density of ∼5 kA cm{sup −2} in continuous wave operation. The series resistance of the device is 6 Ω and the resistivity is 1.5 Ω cm, confirming thereby the excellent electrical properties of p-type Al{sub 0.06}Ga{sub 0.94}N:Mg despite the low growth temperature.

  12. Carrier Collection and Scattering in Quantum Well and Superlattice Devices

    DTIC Science & Technology

    1993-12-16

    doped layers. Both the MQW and the SQW are then in a neutral region with littl electric the smie. The peaks at 7660 and 8200/ A orson d to field . Since...the well. This requirement is satisfied S..... . 1 i a 2 ML nAs-GaAsquantum wells, theelectronS ... bound state is several kT deep in the quntum weLU...Minimum s" L K iHam Y. C. Le. and J. RL Lee, IEM J. Quntum eirarm"n. X lming thrdIUod and masximum laer output crsod to the IAs qum- 25 (1990). turn wel

  13. Simulation of a broadband nano-biosensor based on an onion-like quantum dot-quantum well structure

    NASA Astrophysics Data System (ADS)

    Absalan, H.; SalmanOgli, A.; Rostami, R.

    2013-07-01

    The fluorescence resonance energy transfer is studied between modified quantum-dots and quantum-wells used as a donor and an acceptor. Because of the unique properties of quantum dots, including diverse surface modification flexibility, bio-compatibility, high quantum yields and wide absorption, their use as nano-biosensors and bio-markers used in diagnosis of cancer is suggested. The fluorescence resonance energy transfer is simulated in a quantum dot-quantum well system, where the energy can flow from donor to acceptor. If the energy transfer can be either turned on or off by a specific interaction, such as interaction with any dyes, a molecular binding event or a cleavage reaction, a sensor can be designed (under assumption that the healthy cells have a known effect or unyielding effect on output parameters while cancerous cells, due to their pandemic optical properties, can impact the fluorescence resonance energy transfer parameters). The developed nano-biosensor can operate in a wide range of wavelengths (310 - 760 nm).

  14. Simulation of a broadband nano-biosensor based on an onion-like quantum dot-quantum well structure

    SciTech Connect

    Absalan, H; SalmanOgli, A; Rostami, R

    2013-07-31

    The fluorescence resonance energy transfer is studied between modified quantum-dots and quantum-wells used as a donor and an acceptor. Because of the unique properties of quantum dots, including diverse surface modification flexibility, bio-compatibility, high quantum yields and wide absorption, their use as nano-biosensors and bio-markers used in diagnosis of cancer is suggested. The fluorescence resonance energy transfer is simulated in a quantum dot-quantum well system, where the energy can flow from donor to acceptor. If the energy transfer can be either turned on or off by a specific interaction, such as interaction with any dyes, a molecular binding event or a cleavage reaction, a sensor can be designed (under assumption that the healthy cells have a known effect or unyielding effect on output parameters while cancerous cells, due to their pandemic optical properties, can impact the fluorescence resonance energy transfer parameters). The developed nano-biosensor can operate in a wide range of wavelengths (310 - 760 nm). (laser applications in biology and medicine)

  15. Two-dimensional electron gas in monolayer InN quantum wells

    SciTech Connect

    Pan, W. E-mail: e.dimakis@hzdr.de; Wang, G. T.; Dimakis, E. E-mail: e.dimakis@hzdr.de; Moustakas, T. D.; Tsui, D. C.

    2014-11-24

    We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in a superlattice structure of 40 InN quantum wells consisting of one monolayer of InN embedded between 10 nm GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5 × 10{sup 15 }cm{sup −2} (or 1.25 × 10{sup 14 }cm{sup −2} per InN quantum well, assuming all the quantum wells are connected by diffused indium contacts) and 420 cm{sup 2}/Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES.

  16. Metallic quantum well states in artificial structures of strongly correlated oxide.

    PubMed

    Yoshimatsu, K; Horiba, K; Kumigashira, H; Yoshida, T; Fujimori, A; Oshima, M

    2011-07-15

    The quantum confinement of strongly correlated electrons in artificial structures provides a platform for studying the behavior of correlated Fermi-liquid states in reduced dimensions. We report the creation and control of two-dimensional electron-liquid states in ultrathin films of SrVO(3) grown on Nb:SrTiO(3) substrates, which are artificial oxide structures that can be varied in thickness by single monolayers. Angle-resolved photoemission from the SrVO(3)/Nb:SrTiO(3) samples shows metallic quantum well states that are adequately described by the well-known phase-shift quantization rule. The observed quantum well states in SrVO(3) ultrathin films exhibit distinctive features--such as orbital-selective quantization originating from the anisotropic orbital character of the V 3d states and unusual band renormalization of the subbands near the Fermi level--that reflect complex interactions in the quantum well.

  17. Experimental signatures of the inverted phase in InAs/GaSb coupled quantum wells

    NASA Astrophysics Data System (ADS)

    Karalic, Matija; Mueller, Susanne; Mittag, Christopher; Pakrouski, Kiryl; Wu, QuanSheng; Soluyanov, Alexey A.; Troyer, Matthias; Tschirky, Thomas; Wegscheider, Werner; Ensslin, Klaus; Ihn, Thomas

    2016-12-01

    Transport measurements are performed on InAs/GaSb double quantum wells at zero and finite magnetic fields applied parallel and perpendicular to the quantum wells. We investigate a sample in the inverted regime where electrons and holes coexist, and compare it with another sample in the noninverted semiconducting regime. The activated behavior in conjunction with a strong suppression of the resistance peak at the charge neutrality point in a parallel magnetic field attest to the topological hybridization gap between electron and hole bands in the inverted sample. We observe an unconventional Landau level spectrum with energy gaps modulated by the magnetic field applied perpendicular to the quantum wells. This is caused by a strong spin-orbit interaction provided jointly by the InAs and the GaSb quantum wells.

  18. T1 spin lifetimes in n-doped quantum wells and dots

    NASA Astrophysics Data System (ADS)

    Colton, John; Clark, Ken; Craft, Daniel; Cutler, Jane; Meyer, David; Park, Tyler

    2012-02-01

    We have used a pump probe technique to measure T1 spin lifetimes in n-type GaAs quantum wells and InAs self-assembled quantum dots. The circularly polarized pump laser pulse aligns the spins; the linearly polarized probe laser pulse probes the spin states of the selected well (or dots) via the Kerr (or Faraday) effect at some later time. Results for the quantum well sample include a spin-filling effect that depends on the direction from which the probe laser wavelength approaches that of the well, and spin lifetimes ranging from 50 to 2000 ns (depending on temperature and field conditions). The InAs quantum dots, doped such that each dot has approximately one extra electron, display T1 lifetimes longer than 5 ms at 1 T and 1.5 K.

  19. Picosecond Acoustics in Single Quantum Wells of Cubic GaN /(Al ,Ga )N

    NASA Astrophysics Data System (ADS)

    Czerniuk, T.; Ehrlich, T.; Wecker, T.; As, D. J.; Yakovlev, D. R.; Akimov, A. V.; Bayer, M.

    2017-01-01

    A picosecond acoustic pulse is used to study the photoelastic interaction in single zinc-blende GaN /AlxGa1 -x N quantum wells. We use an optical time-resolved pump-probe setup and demonstrate that tuning the photon energy to the quantum well's lowest electron-hole transition makes the experiment sensitive to the quantum well only. Because of the small width, its temporal and spatial resolution allows us to track the few-picosecond-long transit of the acoustic pulse. We further deploy a model to analyze the unknown photoelastic coupling strength of the quantum well for different photon energies and find good agreement with the experiments.

  20. Design and Analysis of a Multicolor Quantum Well Infrared Photodetector

    DTIC Science & Technology

    2005-09-01

    battle- field. Statistics and analysis have shown that the capability to detect and identify the en- emy platforms ’ IR signatures as well as the ability...important role. By emulating the sought platform IR signature and seducing the IR guided weapon, it is possible to reduce significantly the target...probability of ther- moionc transitions. The third mechanism is classical thermoionic emission and it is the dominant source at higher temperatures. To

  1. Capture time versus barrier thickness in quantum-well structures measured by infrared photoconductive gain

    NASA Astrophysics Data System (ADS)

    Rosencher, E.; Luc, F.; Bois, P.; Nagle, J.; Cordier, Y.

    1993-12-01

    Photoconductive gain measurements in quantum-well (QW) infrared detectors are used to determine the variation of the capture time of electrons in QWs as a function of barrier thickness. The capture time is shown to be proportional to the multi-quantum-well period, which is consistent with a quantum mechanical description of the capture process. The measured values are far higher than the ones measured by time-resolved photoluminescence, ranging from 8 to 150 ps, depending on the applied electric field and barrier thickness. The reasons for this discrepancy are discussed.

  2. Multiple Quantum Well-Based Modulating Retroreflectors for Inter- and Intra-Spacecraft Communications

    DTIC Science & Technology

    2006-01-01

    Multiple quantum well-based modulating retroreflectors for inter- and intra-spacecraft communication Peter G. Goetz, William S. Rabinovich, G...is presented. Keywords: Free-space optics, modulating retroreflector , multiple quantum well, radiation tolerance, FSO, MQW, MRR 1. INTRODUCTION...RETRO-REFLECTORS (MRRS) A MRR couples a passive optical retroreflector such as a corner-cube or a cat’s eye retroreflector with an electro-optic

  3. Quantum Well Intrasubband Photodetector for Far Infared and Terahertz Radiation Detection

    NASA Technical Reports Server (NTRS)

    Ting, David Z. -Y.; Chang, Yia-Chung; Bandara, Sumith V.; Gunapala, Sarath D.

    2007-01-01

    The authors present a theoretical analysis on the possibility of using the dopant-assisted intrasubband absorption mechanism in quantum wells for normal-incidence far infrared/terahertz radiation detection. The authors describe the proposed concept of the quantum well intrasubband photodetector (QWISP), which is a compact semiconductor heterostructure device compatible with existing GaAs focal-plane array technology, and present theoretical results demonstrating strong normal-incidence absorption and responsivity in the QWISP.

  4. Carrier dynamics in type-II GaAsSb/GaAs quantum wells.

    PubMed

    Baranowski, M; Syperek, M; Kudrawiec, R; Misiewicz, J; Gupta, J A; Wu, X; Wang, R

    2012-05-09

    Time-resolved photoluminescence (PL) characteristics of type-II GaAsSb/GaAs quantum wells are presented. The PL kinetics are determined by the dynamic band bending effect and the distribution of localized centers below the quantum well band gap. The dynamic band bending results from the spatially separated electron and hole distribution functions evolving in time. It strongly depends on the optical pump power density and causes temporal renormalization of the quantum well ground-state energy occurring a few nanoseconds after the optical pulse excitation. Moreover, it alters the optical transition oscillator strength. The measured PL lifetime is 4.5 ns. We point out the critical role of the charge transfer processes between the quantum well and localized centers, which accelerate the quantum well photoluminescence decay at low temperature. However, at elevated temperatures the thermally activated back transfer process slows down the quantum well photoluminescence kinetics. A three-level rate equation model is proposed to explain these observations.

  5. Carrier dynamics in type-II GaAsSb/GaAs quantum wells

    NASA Astrophysics Data System (ADS)

    Baranowski, M.; Syperek, M.; Kudrawiec, R.; Misiewicz, J.; Gupta, J. A.; Wu, X.; Wang, R.

    2012-05-01

    Time-resolved photoluminescence (PL) characteristics of type-II GaAsSb/GaAs quantum wells are presented. The PL kinetics are determined by the dynamic band bending effect and the distribution of localized centers below the quantum well band gap. The dynamic band bending results from the spatially separated electron and hole distribution functions evolving in time. It strongly depends on the optical pump power density and causes temporal renormalization of the quantum well ground-state energy occurring a few nanoseconds after the optical pulse excitation. Moreover, it alters the optical transition oscillator strength. The measured PL lifetime is 4.5 ns. We point out the critical role of the charge transfer processes between the quantum well and localized centers, which accelerate the quantum well photoluminescence decay at low temperature. However, at elevated temperatures the thermally activated back transfer process slows down the quantum well photoluminescence kinetics. A three-level rate equation model is proposed to explain these observations.

  6. Interaction of electrons with optical phonons localized in a quantum well

    SciTech Connect

    Pozela, J. Pozela, K.; Juciene, V.; Suziedelis, A.; Shkolnik, A. S.; Mikhrin, S. S.; Mikhrin, V. S.

    2009-12-15

    The scattering rate of electrons in a quantum well by localized polar optical and interface phonons is considered. The dependence of the force of the electron-phonon interaction on the frequency of optical phonons in materials of the heterostructure forming the electron and phonon quantum wells is determined. It is shown that, by varying the composition of semiconductors forming the quantum well and its barriers, it is possible to vary the scattering rates of electrons by a factor of several times. The scattering rates of electrons by polar optical phonons are calculated depending on the fractions In{sub x} and In{sub y} in the composition of semiconductors forming the In{sub x}Al{sub 1-x}As/In{sub y}Ga{sub 1-y}As quantum wells. Dependences of the mobility and saturated drift velocity of electrons in high electric fields and quantum wells In{sub y}Ga{sub 1-y}As on the composition of the In{sub x}Al{sub 1-x}As barriers introduced into quantum wells are determined experimentally. The electron mobility increases, while the saturated drift velocity decreases as the fraction of In{sub x} in the composition of barriers is increased.

  7. Transmission line model for strained quantum well lasers including carrier transport and carrier heating effects.

    PubMed

    Xia, Mingjun; Ghafouri-Shiraz, H

    2016-03-01

    This paper reports a new model for strained quantum well lasers, which are based on the quantum well transmission line modeling method where effects of both carrier transport and carrier heating have been included. We have applied this new model and studied the effect of carrier transport on the output waveform of a strained quantum well laser both in time and frequency domains. It has been found that the carrier transport increases the turn-on, turn-off delay times and damping of the quantum well laser transient response. Also, analysis in the frequency domain indicates that the carrier transport causes the output spectrum of the quantum well laser in steady state to exhibit a redshift which has a narrower bandwidth and lower magnitude. The simulation results of turning-on transients obtained by the proposed model are compared with those obtained by the rate equation laser model. The new model has also been used to study the effects of pump current spikes on the laser output waveforms properties, and it was found that the presence of current spikes causes (i) wavelength blueshift, (ii) larger bandwidth, and (iii) reduces the magnitude and decreases the side-lobe suppression ratio of the laser output spectrum. Analysis in both frequency and time domains confirms that the new proposed model can accurately predict the temporal and spectral behaviors of strained quantum well lasers.

  8. Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells

    PubMed Central

    Rong, X.; Wang, X. Q.; Chen, G.; Zheng, X. T.; Wang, P.; Xu, F. J.; Qin, Z. X.; Tang, N.; Chen, Y. H.; Sang, L. W.; Sumiya, M.; Ge, W. K.; Shen, B.

    2015-01-01

    AlGaN/GaN quantum structure is an excellent candidate for high speed infrared detectors based on intersubband transitions. However, fabrication of AlGaN/GaN quantum well infrared detectors suffers from polarization-induced internal electric field, which greatly limits the carrier vertical transport. In this article, a step quantum well is proposed to attempt solving this problem, in which a novel spacer barrier layer is used to balance the internal electric field. As a result, a nearly flat band potential profile is obtained in the step barrier layers of the AlGaN/GaN step quantum wells and a bound-to-quasi-continuum (B-to-QC) type intersubband prototype device with detectable photocurrent at atmosphere window (3–5 μm) is achieved in such nitride semiconductors. PMID:26395756

  9. Effect of well layer thickness on quantum and energy conversion efficiencies for InGaN/GaN multiple quantum well solar cells

    NASA Astrophysics Data System (ADS)

    Miyoshi, Makoto; Tsutsumi, Tatsuya; Kabata, Tomoki; Mori, Takuma; Egawa, Takashi

    2017-03-01

    We investigated the effect of well layer thicknesses on the external quantum efficiency (EQE) and energy conversion efficiency (ECE) for InGaN/GaN multiple quantum well (MQW) solar cells grown on sapphire substrates by metalorganic chemical vapor deposition. The results indicated that EQE and ECE have maximum values at a specific well thickness. When the well thickness is sufficiently thin, EQE and ECE increase with an increase in the well thickness owing to an increase in light absorption. Then, once the well thickness surpasses a critical thickness, EQE and ECE begin to decrease owing to the influence of nonradiative recombination processes, which was indicated by the static and dynamic photoluminescence analyses. The critical well thickness probably depends not only on the MQW design but also on growth conditions. Further, we confirmed that the increased total thickness of the stacked well layers leads to increased light absorption and thereby contributes to the improvement of solar cell performance. A high short circuit current density of 1.34 mA/cm2 and a high ECE of 1.31% were achieved for a InGaN/GaN MQW solar cell with a 3.2-nm-thick InGaN well with total well thickness of 115 nm.

  10. Polariton Local States in Periodic Bragg Multiple Quantum Well Structures

    NASA Astrophysics Data System (ADS)

    Deych, Lev; Yamilov, Alexey; Lisyansky, Alexander

    2000-11-01

    We analytically study defect polariton states in Bragg MQW structures, and defect induced changes in transmission and reflection spectra. Defect layers can differ from the host layers in three different ways: in the exciton-light coupling strength, in the exciton resonance frequency, and in interwell spacing. We show that a single defect leads to two local polariton modes in the photonic band gap. These modes lead to peculiarities in reflection and transmission spectra. Each type of defect can be reproduced experimentally, and we show that each of them play distinctly different roles in the optical properties of the system. We obtain closed analytical expressions for respective local frequencies, as well as for reflection and transmission coefficients. On the basis of the results obtained, we give practical recommendation for experimental observation of the studied effects in samples used in Refs. [1,2]. [1] M.Hübner, J. Kuhl, T. Stroucken, A. Knorr, S.W. Koch, R. Hey, K. Ploog, Phys. Rev. Lett. 76, 4199 (1996). [2] M.Hübner, J.P. Prineas, C. Ell, P. Brick, E.S. Lee, G. Khitrova, H.M. Gibbs, S.W. Koch, Phys. Rev. Lett. 83, 2841 (1999).

  11. Controlling the Electronic Structures and Properties of in-Plane Transition-Metal Dichalcogenides Quantum Wells

    PubMed Central

    Wei, Wei; Dai, Ying; Niu, Chengwang; Huang, Baibiao

    2015-01-01

    In-plane transition-metal dichalcogenides (TMDs) quantum wells have been studied on the basis of first-principles density functional calculations to reveal how to control the electronic structures and the properties. In collection of quantum confinement, strain and intrinsic electric field, TMD quantum wells offer a diverse of exciting new physics. The band gap can be continuously reduced ascribed to the potential drop over the embedded TMD and the strain substantially affects the band gap nature. The true type-II alignment forms due to the coherent lattice and strong interface coupling suggesting the effective separation and collection of excitons. Interestingly, two-dimensional quantum wells of in-plane TMD can enrich the photoluminescence properties of TMD materials. The intrinsic electric polarization enhances the spin-orbital coupling and demonstrates the possibility to achieve topological insulator state and valleytronics in TMD quantum wells. In-plane TMD quantum wells have opened up new possibilities of applications in next-generation devices at nanoscale. PMID:26616013

  12. Efficient method for calculating electronic bound states in arbitrary one-dimensional quantum wells

    NASA Astrophysics Data System (ADS)

    de Aquino, V. M.; Iwamoto, H.; Dias, I. F. L.; Laureto, E.; da Silva, M. A. T.; da Silva, E. C. F.; Quivy, A. A.

    2017-01-01

    In the present paper it is demonstrated that the bound electronic states of multiple quantum wells structures may be calculated very efficiently by expanding their eigenstates in terms of the eigenfunctions of a particle in a box. The bound states of single and multiple symmetric or nonsymmetric wells are calculated within the single-band effective mass approximation. A comparison is then made between the results obtained for simple cases with exact calculations. We also apply our approach to a GaAs/AlGaAs multiple quantum well structure composed of forty periods each one with seven quantum wells. The method may be very useful to design narrow band quantum cascade photodetectors to work without applied bias in a photovoltaic mode. With the presented method the effects of a electric field may also be easily included which is very important if one desires study quantum well structures for application to the development of quantum cascade lasers. The advantages of the method are also presented.

  13. Gated THz magneto-optics of the Quantum spin Hall state in InAs/GaSb double quantum wells

    NASA Astrophysics Data System (ADS)

    Jenkins, Gregory S.; Sushkov, Andrei B.; Carey, Remington L.; Drew, H. Dennis; Sullivan, Gerard; Du, Lingjie; Du, Rui-Rui

    2015-03-01

    Gate-modulated THz cyclotron resonance and Kerr effect are used to characterize the electronic structure and the roles of hybridization and excitonic effects in band inverted InAs/GaSb quantum wells. In contrast to previous optical studies, a gate tunes the chemical potential through the hybridization gap. Measured magnetic state transitions are used to delineate the inverted gap which is thought to determine the observed large critical field transition Bc from the non-trivial Z2 state to the trivial Z state of the system as predicted by the Benevig-Hughes-Zhang (BHZ) model, as well as transitions from the quantum spin Hall to Quantum Hall Effect regimes, as a function of gate, frequency, and magnetic field. Evidence for excitonic condensation using zero field THz Kerr rotation to detect broken time reversal ground states will be discussed. UMD supported by DOE #ER-46741-SC0005436, Rice by DOE #DE-FG02-06ER46274.

  14. Reversed polarized emission in highly strained a -plane GaN/AlN multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Mata, R.; Cros, A.; Budagosky, J. A.; Molina-Sánchez, A.; Garro, N.; García-Cristóbal, A.; Renard, J.; Founta, S.; Gayral, B.; Bellet-Amalric, E.; Bougerol, C.; Daudin, B.

    2010-09-01

    The polarization of the emission from a set of highly strained a -plane GaN/AlN multiple quantum wells of varying well widths has been studied. A single photoluminescence peak is observed that shifts to higher energies as the quantum well thickness decreases due to quantum confinement. The emitted light is linearly polarized. For the thinnest samples the preferential polarization direction is perpendicular to the wurtzite c axis with a degree of polarization that decreases with increasing well width. However, for the thickest well the preferred polarization direction is parallel to the c axis. Raman scattering, x-ray diffraction, and transmission electron microscopy studies have been performed to determine the three components of the strain tensor in the active region. Moreover, the experimental results have been compared with the strain values computed by means of a model based on the elastic continuum theory. A high anisotropic compressive in-plane strain has been found, namely, -0.6% and -2.8% along the in-plane directions [11¯00] and [0001], respectively, for the thickest quantum well. The oscillator strength of the lowest optical transition has been calculated within the framework of a multiband envelope function model for various quantum well widths and strain values. The influence of confinement and strain on the degree of polarization is discussed and compared with experiment considering various sets of material parameters.

  15. Atom and Electron Pump Based on Oscillating Wells: Classical versus Quantum features

    NASA Astrophysics Data System (ADS)

    Garner, Joshua; Ruppert, Kevin; Das, Kunal

    2015-05-01

    The transport dynamics of ultracold atoms in quasi one-dimensional (1D) waveguides share much in common with that of electrons and holes in nanowires. In the latter system, biasless transport by time-varying potential, commonly called quantum pumping, has been much researched theoretically as a mechanism that can provide significant control over the current. With scant experimental success, ultracold atoms provide a promising alternate for exploring quantum pumps. Prior studies of quantum pumps have generally focused on using potential barriers as the pump elements. In this study, we undertake a first detailed study of the scattering dynamics involved in using quantum wells to drive the pumping. Specifically, we do a comparative study using quantum, classical and semiclassical picture in a common wavepacket approach that also allows direct comparison of quantum versus classical features. Notably, a static well, unlike a barrier, does not reflect; but oscillating ones do even in the classical limit, and moreover, particles can be trapped in wells indefinitely. Such features lead to distinctive features for well-based pumps that can have both practical and fundamental physics implications. Our study is done in the context of several different pump configurations. Supported by NSF Grant No. PHY-1313871 and grants from PASSHE-FPDC and Kutztown University.

  16. In-well pumped mid-infrared PbTe/CdTe quantum well vertical external cavity surface emitting lasers

    SciTech Connect

    Khiar, A. Witzan, M.; Hochreiner, A.; Eibelhuber, M.; Springholz, G.; Volobuev, V.

    2014-06-09

    Optical in-well pumped mid-infrared vertical external cavity surface emitting lasers based on PbTe quantum wells embedded in CdTe barriers are realized. In contrast to the usual ternary barrier materials of lead salt lasers such as PbEuTe of PbSrTe, the combination of narrow-gap PbTe with wide-gap CdTe offers an extremely large carrier confinement, preventing charge carrier leakage from the quantum wells. In addition, optical in-well pumping can be achieved with cost effective and readily available near infrared lasers. Free carrier absorption, which is a strong loss mechanism in the mid-infrared, is strongly reduced due to the insulating property of CdTe. Lasing is observed from 85 K to 300 K covering a wavelength range of 3.3–4.2 μm. The best laser performance is achieved for quantum well thicknesses of 20 nm. At low temperature, the threshold power is around 100 mW{sub P} and the output power more than 700 mW{sub P}. The significance of various charge carrier loss mechanisms are analyzed by modeling the device performance. Although Auger losses are quite low in IV–VI semiconductors, an Auger coefficient of C{sub A} = 3.5 × 10{sup −27} cm{sup 6} s{sup −1} was estimated for the laser structure, which is attributed to the large conduction band offset.

  17. Tilt Magnetic Field Studies of Quantum Hall Effect in a High Quality Si/SiGe Quantum Well

    SciTech Connect

    Shi, Xiaoyan; Lu, Tzu-Ming; Pan, Wei; Huang, S. H.; Liu, C. W.; Li, J. Y.

    2015-01-01

    High quality Si/SiGe quantum well samples have provided an ideal platform to study the electron-electron (ee) interactions in two-dimensional electron systems (2DES). Currently, the sample mobility has surpassed 106 cm2/Vs and very low carrier densities are realized, which are crucial to reveal strong e-e interactions

  18. Luminescence enhancement of nanocrystal quantum wells by bandgap and strain engineering

    NASA Astrophysics Data System (ADS)

    Cao, Xian-An; Lu, Yifei

    2015-01-01

    CdSe-based nanocrystal quantum wells (QWs) were synthesized around CdS nanocrystal quantum dots and were bandgap- and strain-engineered to achieve high-efficiency short-wavelength luminescence. Tuning the CdSe QW width in the range of 1.05 to 1.58 nm has led to blue-green light emission, whose quantum yield was improved up to 48% through strain compensation by an optimized ZnS outer shell. The luminescence spectrum can be modified by adding a ZnS inner barrier layer to block charge and exciton transfer between the QW and CdS core. Strain management by adjusting the well and barrier thickness has proven critical in such a complex multilayer quantum system for obtaining high-quality nanocrystals and light emission.

  19. Influence of confined acoustic phonons on the Radioelectric field in a Quantum well

    NASA Astrophysics Data System (ADS)

    Long, Do Tuan; Quang Bau, Nguyen

    2015-06-01

    The influence of confined acoustic phonons on the Radioelectric field in a quantum well has been studied in the presence of a linearly polarized electromagnetic wave and a laser radiation. By using the quantum kinetic equation for electrons with confined electrons - confined acoustic phonons interaction, the analytical expression for the Radio electric field is obtained. The formula of the Radio electric field contains the quantum number m characterizing the phonons confinement and comes back to the case of unconfined phonons when m reaches to zero. The dependence of the Radio electric field on the frequency of the laser radiation, in case of confined acoustic phonons, is also achieved by numerical method for a specific quantum well AlGaAs/GaAs/AlGaAs. Results show that the Radio electric field has a peak and reaches saturation as the frequency of the laser radiation increases.

  20. Integrated quantum-well-laser transmitter compatible with ion-implanted GaAs integrated circuits

    NASA Astrophysics Data System (ADS)

    Hong, C. S.; Kasemset, D.; Kim, M. E.; Milano, R. A.

    1984-08-01

    The fabrication of an integrated optoelectronic transmitter consisting of an MOCVD-grown quantum-well laser and ion-implanted metal-semiconductor field-effect transistors (MESFETs) is described. The transmitter is characterized by a laser threshold current of 30 mA, differential quantum efficiency of 50 percent, MESFET transconductance of 60 mS/mm, and operation at frequencies up to 2 GHz.

  1. Energy spectrum and transport in narrow HgTe quantum wells

    SciTech Connect

    Germanenko, A. V.; Minkov, G. M.; Rut, O. E.; Sherstobitov, A. A.; Dvoretsky, S. A.; Mikhailov, N. N.

    2015-01-15

    The results of an experimental study of the transport phenomena and the hole energy spectrum of two-dimensional systems in the quantum well of HgTe zero-gap semiconductor with normal arrangement of quantum-confinement subbands are presented. An analysis of the experimental data allows us to reconstruct the carrier energy spectrum near the hole subband extrema. The results are interpreted using the standard kP model.

  2. High performance 4.7 THz GaAs quantum cascade lasers based on four quantum wells

    NASA Astrophysics Data System (ADS)

    Ohtani, Keita; Turčinková, Dana; Bonzon, Christopher; Benea-Chelmus, Ileana-Cristina; Beck, Mattias; Faist, Jérôme; Justen, Matthias; Graf, Urs U.; Mertens, Marc; Stutzki, Jürgen

    2016-12-01

    GaAs/AlGaAs quantum cascade lasers based on four quantum well structures operating at 4.7 THz are reported. A large current density dynamic range is observed, leading to a maximum operation temperature of 150 K for the double metal waveguide device and a high peak output power more than 200 mW for the single surface plasmon waveguide device. A continuous wave, single mode, third order distributed feedback laser with a low electrical power dissipation and a narrow far-field beam pattern, which is required for a local oscillator in astronomy heterodyne spectrometers, is also demonstrated.

  3. Interband optical transition energy and oscillator strength in a lead based CdSe quantum dot quantum well heterostructure

    SciTech Connect

    Saravanamoorthy, S. N.; Peter, A. John

    2015-06-24

    Binding energies of the exciton and the interband optical transition energies are studied in a CdSe/Pb{sub 1-x}Cd{sub x}Se/CdSe spherical quantum dot-quantum well nanostructure taking into account the geometrical confinement effect. The core and shell are taken as the same material. The initial and final states of energy and the overlap integrals of electron and hole wave functions are determined by the oscillator strength. The oscillator strength and the radiative transition life time with the dot radius are investigated for various Cd alloy content in the core and shell materials.

  4. Correlation between the structural and cathodoluminescence properties in InGaN/GaN multiple quantum wells with large number of quantum wells

    SciTech Connect

    Yang, Jing; Zhao, Degang Jiang, Desheng; Chen, Ping; Zhu, Jianjun; Liu, Zongshun; Le, Lingcong; He, Xiaoguang; Li, Xiaojing; Wang, Hui; Yang, Hui; Jahn, Uwe

    2014-09-01

    Cathodoluminescence (CL) characteristics on 30-period InGaN/GaN multiple quantum well (MQW) solar cell structures are investigated, revealing the relationship between optical and structural properties of the MQW structures with a large number of quantum wells. In the bottom MQW layers, a blueshift of CL peak along the growth direction is found and attributed to the decrease of indium content due to the compositional pulling effect. An obvious split of emission peak and a redshift of the main emission energy are found in the top MQW layers when the MQW grows above the critical layer thickness. They are attributed to the segregation of In-rich InGaN clusters rather than the increase of indium content in quantum well layer. The MQW structure is identified to consist of two regions: a strained one in the bottom, where the indium content is gradually decreased, and a partly relaxed one in the top with segregated In-rich InGaN clusters.

  5. Quantum efficiency affected by localized carrier distribution near the V-defect in GaN based quantum well

    SciTech Connect

    Cho, Yong-Hee Shim, Mun-Bo; Hwang, Sangheum; Kim, Sungjin; Kim, Jun-Youn; Kim, Jaekyun; Park, Young-Soo; Park, Seoung-Hwan

    2013-12-23

    It is known that due to the formation of in-plane local energy barrier, V-defects can screen the carriers which non-radiatively recombine in threading dislocations (TDs) and hence, enhance the internal quantum efficiency in GaN based light-emitting diodes. By a theoretical modeling capable of describing the inhomogeneous carrier distribution near the V-defect in GaN based quantum wells, we show that the efficient suppression of non-radiative (NR) recombination via TD requires the local energy barrier height of V-defect larger than ∼80 meV. The NR process in TD combined with V-defect influences the quantum efficiency mainly in the low injection current density regime suitably described by the linear dependence of carrier density. We provide a simple phenomenological expression for the NR recombination rate based on the model result.

  6. Growth and characterization of phosphor-free white light-emitting diodes based on InGaN blue quantum wells and green-yellow quantum dots

    NASA Astrophysics Data System (ADS)

    Yang, Di; Wang, Lai; Lv, Wen-Bin; Hao, Zhi-Biao; Luo, Yi

    2015-06-01

    Phosphor-free white light-emitting diodes consisting of 4 layers of InGaN/GaN quantum dots and 4 layers of quantum wells have been grown by metal organic chemical vapor deposition. A white emission was demonstrated under electrical injection by mixing the green-yellow light from quantum dots and the blue light from quantum wells. At the injection current of 5 mA, the electroluminescence peak wavelengths of quantum dots and quantum wells were 548 nm and 450 nm, respectively, resulting in the color-rendering index Ra of 62. As the injection current increased, a faster emission enhancement of quantum well and an emission blue shift of the quantum dots were observed, which led to the decrease of Ra.

  7. Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

    NASA Astrophysics Data System (ADS)

    Morrison, C.; Casteleiro, C.; Leadley, D. R.; Myronov, M.

    2016-09-01

    The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm2/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m0. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour, analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.

  8. Effect of phonon confinement on lattice thermal conductivity of lead Telluride quantum well structure

    SciTech Connect

    Tripathi, Madhvendra Nath

    2014-04-24

    The paper examines the effect of spatial confinement of acoustic phonons on average group velocity and consequently the lattice thermal conductivity of a free-standing PbTe quantum well structure and their temperature dependence. The average group velocity at 100 Å decreases 30% to the bulk value and falls more rapidly on reducing the width of quantum well. Moreover, the lattice thermal conductivity of 100 Å wide PbTe quantum well with value of 0.60 W/mK shows considerable decrease of 70% compared to it’s bulk value. It is observed that the effect of reduction in well width is less pronounce as temperature increases. This appears mainly due to dominance of umklapp processes over the confinement effects.

  9. Orientation dependence of strained ZnSe/ZnS(h11) single quantum well luminescence

    NASA Astrophysics Data System (ADS)

    Tomasini, P.; Arai, K.; Lu, F.; Zhu, Z. Q.; Sekiguchi, T.; Suezawa, M.; Yao, T.; Shen, M. Y.; Goto, T.; Yasuda, T.; Segawa, Y.

    1998-04-01

    Pseudomorphic ZnSe/ZnS single quantum well (SQW) structures have been grown on GaP substrates with high Miller indices. Samples with different crystallographic axis, grown under similar experimental conditions, exhibit different thicknesses, since the growth rate of a crystal facet is axis dependent. The optical properties of ZnSe/ZnS(h11) single quantum wells have been successfully related to the axis orientation through a finite square well potential model. Optical transitions in ZnSe SQWs are dominated by the axis dependence of the heavy-hole effective masses. Furthermore, calculations concerning the piezoelectric effect show that the quantum confined Stark effect is almost negligible for 1-2 monolayers thick wells.

  10. Anisotropy of the electron g factor in quantum wells based on cubic semiconductors

    SciTech Connect

    Alekseev, P. S.

    2013-09-15

    A new mechanism for the spin splitting of electron levels in asymmetric quantum wells based on GaAs-type semiconductors relative to rotations of the magnetic field in the well plane is suggested. It is demonstrated that the anisotropy of the Zeeman splitting (linear in a magnetic field) arises in asymmetric quantum wells due to the interface spin-orbit terms in the electron Hamiltonian. In the case of symmetric quantum wells, it is shown that the anisotropy of the Zeeman splitting is a cubic function of the magnitude of the magnetic field, depends on the direction of the magnetic field in the interface plane as the fourth-order harmonic, and is governed by the spin-orbit term of the fourth order by the kinematic momentum in the electron Hamiltonian of a bulk semiconductor.

  11. A gold hybrid structure as optical coupler for quantum well infrared photodetector

    SciTech Connect

    Ding, Jiayi; Li, Qian; Jing, Youliang; Chen, Xiaoshuang Li, Zhifeng; Li, Ning; Lu, Wei

    2014-08-28

    A hybrid structure consisting of a square lattice of gold disk arrays and an overlaying gold film is proposed as an optical coupler for a backside-illuminated quantum well infrared photodetector (QWIP). Finite difference time-domain method is used to numerically simulate the reflection spectra and the field distributions of the hybrid structure combined with the QWIP device. The results show that the electric field component perpendicular to the quantum well is strongly enhanced when the plasmonic resonant wavelength of the hybrid structure coincides with the response one of the quantum well infrared photodetector regardless of the polarization of the incident light. The effect of the diameter and thickness of an individual gold disk on the resonant wavelength is also investigated, which indicates that the localized surface plasmon also plays a role in the light coupling with the hybrid structure. The coupling efficiency can exceed 50 if the structural parameters of the gold disk arrays are well optimized.

  12. Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping

    PubMed Central

    2015-01-01

    Nanocathodoluminescence reveals the spectral properties of individual InGaN quantum wells in high efficiency light emitting diodes. We observe a variation in the emission wavelength of each quantum well, in correlation with the Si dopant concentration in the quantum barriers. This is reproduced by band profile simulations, which reveal the reduction of the Stark shift in the quantum wells by Si doping. We demonstrate nanocathodoluminescence is a powerful technique to optimize doping in optoelectronic devices. PMID:26488912

  13. In(x)Ga(1-x)As/GaAs Quantum-Well Infrared Photodetectors

    NASA Technical Reports Server (NTRS)

    Gunapala, Sarath D.; Park, Jin S.; Lin, True-Lon; Liu, John K.

    1995-01-01

    Choice of materials for present quantum-well infrared photodetectors (QWIPs) affected principally by two considerations. One was that in comparison with GaAs, In(x)Ga(1-x)As is potentially superior quantum-well material because of its stronger absorption of infrared radiation. Other consideration was that in comparison with Al(x)Ga(1-x)As, which is usual barrier material in older devices, GaAs potentially superior barrier material because it exhibits superior transport properties (lower scattering and higher mobility of charge carriers). GaAs is well material in older devices and barrier material in present devices.

  14. Possibility of multiple tunnelling current peaks in a coupled quantum well system

    NASA Astrophysics Data System (ADS)

    Luis, D.; Díaz, J. P.; Capuj, N. E.; Cruz, H.

    2000-07-01

    In this work, we have numerically integrated in space and time the effective-mass nonlinear Schrödinger equation for an electron wave packet in a bilayer electron system. Considering both Hartree and exchange-correlation potentials, we have calculated the tunnelling rates between the two quantum wells when an external bias is applied in the double quantum well system. Due to the nonlinear effective-mass equation, it is found that the charge dynamically trapped in both wells produces a reaction field which modifies the system resonant condition. At different electronic sheet densities, we have shown the possibility of having multiple resonant tunnelling peaks in a bilayer electron system.

  15. Modeling of dilute nitride cascaded quantum well solar cells for high efficiency photovoltaics

    NASA Astrophysics Data System (ADS)

    Vijaya, G.; Alemu, A.; Freundlich, A.

    2013-03-01

    III-V Dilute Nitride multi-quantum well structures are currently promising candidates to achieve 1 sun efficiencies of <40% with multi-junction design (InGaP/ GaAs/ GaAsN/ Ge). Previously under the assumption of complete carrier collection from wells, we have shown that III-V Dilute Nitride GaAsN multi-quantum well (MQW) structures included in the intrinsic region of the third cell in a 4 junction configuration could yield 1 sun efficiencies greater than 40%. However for a conventional deep well design the characteristic carrier escape times could exceed that of radiative recombination hence limiting the current output of the cell, as has been indicated by prior experiments. In order to increase the current extraction here we evaluate the performance of a cascaded quantum well design whereby a thermally assisted resonant tunneling process is used to accelerate the carrier escape process (<30ps lifetime) and hence improve the photo generated carrier collection efficiency. The quantum efficiency of a p-i-n subcell where a periodic sequence of quantum wells with well and barrier thicknesses adjusted for the sequential extraction operation is calculated using a 2D drift diffusion model and taking into account absorption properties of resulting MQWs. The calculation also accounts for the E-field induced modifications of absorption properties and quantization in quantum wells. The results are then accounted for to calculate efficiencies for the proposed 4 junction design, and indicate potential for reaching efficiencies in excess of this structure is above 42% (1 sun) and above 50% (500 sun) AM1.5.

  16. Comparison of Quantum Dots-in-a-Double-Well and Quantum Dots-in-a-Well Focal Plane Arrays in the Long-Wave Infrared

    DTIC Science & Technology

    2011-07-01

    STRUCTURE The DWELL structure is composed of a 15-layer active region of n- doped InAs QDs embedded in an In.15Ga.85As QW with GaAs barriers, creating an InAs...within the heterostructure and results in an increased overall responsivity. The commercial QWIP device is composed of multiple lay- ers of doped GaAs...Szmulowicz, M. Buchanan, M. Gao, G. J. Brown, and J. Ehret, “Optimizing well doping density for GaAs/AlGaAs p-type quantum well infrared

  17. Energy structure of non-hydrogen-like impurities in quantum wells without spin-orbit coupling

    SciTech Connect

    Romanov, K. S. Averkiev, N. S.

    2012-06-15

    Hole states localized at an acceptor in a quantum well formed of a semiconductor with cubic symmetry without spin-orbit coupling (the symmetry {Gamma}{sub 15}) are considered. It is shown that the triply degenerate level is split, and the energies of the levels are calculated as functions of the well width.

  18. Investigation of Transmission Resonances with Specific Properties in Rectangular Semiconductor Quantum Wells

    ERIC Educational Resources Information Center

    Niketic, Nemanja; Milanovic, Vitomir; Radovanovic, Jelena

    2012-01-01

    In this paper we provide a detailed analysis of the energy position and type of transmission maxima in rectangular quantum wells (QWs), taking into consideration the difference of electron effective masses in the barrier and well layers. Particular attention is given to transmission maxima that are less than unity and the implications of effective…

  19. Unexpected edge conduction in mercury telluride quantum wells under broken time-reversal symmetry

    SciTech Connect

    Ma, Eric Yue; Calvo, M. Reyes; Wang, Jing; Lian, Biao; Muhlbauer, Mathias; Brune, Christoph; Cui, Yong -Tao; Lai, Keji; Kundhikanjana, Worasom; Yang, Yongliang; Baenninger, Matthias; Konig, Markus; Ames, Christopher; Buhmann, Hartmut; Leubner, Philipp; Molenkamp, Laurens W.; Zhang, Shou -Cheng; Goldhaber-Gordon, David; Kelly, Michael A.; Shen, Zhi -Xun

    2015-05-26

    The realization of quantum spin Hall effect in HgTe quantum wells is considered a milestone in the discovery of topological insulators. Quantum spin Hall states are predicted to allow current flow at the edges of an insulating bulk, as demonstrated in various experiments. A key prediction yet to be experimentally verified is the breakdown of the edge conduction under broken time-reversal symmetry. Here we first establish a systematic framework for the magnetic field dependence of electrostatically gated quantum spin Hall devices. We then study edge conduction of an inverted quantum well device under broken time-reversal symmetry using microwave impedance microscopy, and compare our findings to a non-inverted device. At zero magnetic field, only the inverted device shows clear edge conduction in its local conductivity profile, consistent with theory. Surprisingly, the edge conduction persists up to 9 T with little change. Finally, this indicates physics beyond simple quantum spin Hall model, including material-specific properties and possibly many-body effects.

  20. Molecular states in double quantum wells: nanochemistry for metatmaterials with new optical properties

    NASA Astrophysics Data System (ADS)

    Gutierrez, Rafael M.; Castañeda, Arcesio

    2009-08-01

    Quantum mechanics explains the existence and properties of the chemical bond responsible for the formation of molecules from isolated atoms. In this work we study quantum states of Double Quantum Wells, DQW, formed from isolated Single Quantum Wells, SQWs, that can be considered metamaterials. Using the quantum chemistry definition of the covalent bond, we discuss molecular states in DQW as a kind of nanochemistry of metamaterials with new properties, in particular new optical properties. An important particularity of such nanochemistry, is the possible experimental control of the geometrical parameters and effective masses characterizing the semiconductor heterostructures represented by the corresponding DQW. This implies a great potential for new applications of the controlled optical properties of the metamaterials. The use of ab initio methods of intensive numerical calculations permits to obtain macroscopic optical properties of the metamaterials from the fundamental components: the spatial distribution of the atoms and molecules constituting the semiconductor layers. The metamaterial new optical properties emerge from the coexistence of many body processes at atomic and molecular level and complex quantum phenomena such as covalent-like bonds at nanometric dimensions.

  1. Unexpected edge conduction in mercury telluride quantum wells under broken time-reversal symmetry

    DOE PAGES

    Ma, Eric Yue; Calvo, M. Reyes; Wang, Jing; ...

    2015-05-26

    The realization of quantum spin Hall effect in HgTe quantum wells is considered a milestone in the discovery of topological insulators. Quantum spin Hall states are predicted to allow current flow at the edges of an insulating bulk, as demonstrated in various experiments. A key prediction yet to be experimentally verified is the breakdown of the edge conduction under broken time-reversal symmetry. Here we first establish a systematic framework for the magnetic field dependence of electrostatically gated quantum spin Hall devices. We then study edge conduction of an inverted quantum well device under broken time-reversal symmetry using microwave impedance microscopy,more » and compare our findings to a non-inverted device. At zero magnetic field, only the inverted device shows clear edge conduction in its local conductivity profile, consistent with theory. Surprisingly, the edge conduction persists up to 9 T with little change. Finally, this indicates physics beyond simple quantum spin Hall model, including material-specific properties and possibly many-body effects.« less

  2. Strain engineering of nanowire multi-quantum well demonstrated by Raman spectroscopy.

    PubMed

    Wölz, Martin; Ramsteiner, Manfred; Kaganer, Vladimir M; Brandt, Oliver; Geelhaar, Lutz; Riechert, Henning

    2013-09-11

    An analysis of the strain in an axial nanowire superlattice shows that the dominating strain state can be defined arbitrarily between unstrained and maximum mismatch strain by choosing the segment height ratios. We give experimental evidence for a successful strain design in series of GaN nanowire ensembles with axial InxGa1-xN quantum wells. We vary the barrier thickness and determine the strain state of the quantum wells by Raman spectroscopy. A detailed calculation of the strain distribution and LO phonon frequency shift shows that a uniform in-plane lattice constant in the nanowire segments satisfactorily describes the resonant Raman spectra, although in reality the three-dimensional strain profile at the periphery of the quantum wells is complex. Our strain analysis is applicable beyond the InxGa1-xN/GaN system under study, and we derive universal rules for strain engineering in nanowire heterostructures.

  3. Controlling the Spontaneous Emission Rate of Quantum Wells in Rolled-Up Hyperbolic Metamaterials.

    PubMed

    Schulz, K Marvin; Vu, Hoan; Schwaiger, Stephan; Rottler, Andreas; Korn, Tobias; Sonnenberg, David; Kipp, Tobias; Mendach, Stefan

    2016-08-19

    We experimentally demonstrate the enhancement of the spontaneous emission rate of GaAs quantum wells embedded in rolled-up metamaterials. We fabricate microtubes whose walls consist of alternating Ag and (In)(Al)GaAs layers with incorporated active GaAs quantum-well structures. By variation of the layer thickness ratio of the Ag and (In)(Al)GaAs layers we control the effective permittivity tensor of the metamaterial according to an effective medium approach. Thereby, we can design samples with elliptic or hyperbolic dispersion. Time-resolved low temperature photoluminescence spectroscopy supported by finite-difference time-domain simulations reveal a decrease of the quantum well's spontaneous emission lifetime in our metamaterials as a signature of the crossover from elliptic to hyperbolic dispersion.

  4. Gallium arsenide quantum well-based far infrared array radiometric imager

    NASA Technical Reports Server (NTRS)

    Forrest, Kathrine A.; Jhabvala, Murzy D.

    1991-01-01

    We have built an array-based camera (FIRARI) for thermal imaging (lambda = 8 to 12 microns). FIRARI uses a square format 128 by 128 element array of aluminum gallium arsenide quantum well detectors that are indium bump bonded to a high capacity silicon multiplexer. The quantum well detectors offer good responsivity along with high response and noise uniformity, resulting in excellent thermal images without compensation for variation in pixel response. A noise equivalent temperature difference of 0.02 K at a scene temperature of 290 K was achieved with the array operating at 60 K. FIRARI demonstrated that AlGaAS quantum well detector technology can provide large format arrays with performance superior to mercury cadmium telluride at far less cost.

  5. Controlling the Spontaneous Emission Rate of Quantum Wells in Rolled-Up Hyperbolic Metamaterials

    NASA Astrophysics Data System (ADS)

    Schulz, K. Marvin; Vu, Hoan; Schwaiger, Stephan; Rottler, Andreas; Korn, Tobias; Sonnenberg, David; Kipp, Tobias; Mendach, Stefan

    2016-08-01

    We experimentally demonstrate the enhancement of the spontaneous emission rate of GaAs quantum wells embedded in rolled-up metamaterials. We fabricate microtubes whose walls consist of alternating Ag and (In)(Al)GaAs layers with incorporated active GaAs quantum-well structures. By variation of the layer thickness ratio of the Ag and (In)(Al)GaAs layers we control the effective permittivity tensor of the metamaterial according to an effective medium approach. Thereby, we can design samples with elliptic or hyperbolic dispersion. Time-resolved low temperature photoluminescence spectroscopy supported by finite-difference time-domain simulations reveal a decrease of the quantum well's spontaneous emission lifetime in our metamaterials as a signature of the crossover from elliptic to hyperbolic dispersion.

  6. Intersubband Auger recombination and population inversion in quantum-well subbands

    NASA Technical Reports Server (NTRS)

    Borenstain, S.; Katz, J.

    1989-01-01

    The intersubband-Auger-recombination time of electrons under population-inversion conditions in a single quantum well is calculated by taking into account momentum- and energy-conservation rules, and by employing Fermi-Dirac statistics. The screened matrix element of the electron-electron interaction and the overlap integral are calculated for an infinitely deep quantum well. The results are in a good agreement with published experimental data. As a major nonradiative process, the Auger recombination is related to threshold current of infrared lasers based on intersubband transitions in quantum-well structures. The realization of these devices and other limitations to achieving population inversion are discussed. In view of the results, development of these lasers for emission wavelengths corresponding to energies below the LO-phonon energy seems feasible.

  7. Generation of acoustic terahertz waves in hybrid InGaN/GaN quantum wells

    NASA Astrophysics Data System (ADS)

    Mahat, Meg; Llopis, Antonia; Choi, Tae Youl; Periera, Sergio; Watson, Ian; Neogi, Arup

    2015-03-01

    We have carried out differential transmission measurements on InGaN/ GaN quantum wells with Au nanoparticles inserted inside V-pits with high filling fraction. We have observed acoustic wave packets generated with multiple THz frequencies as 0.12 THz from GaN buffer layer, 0.22 THz from Au-InGaN multiple quantum wells region, 0.07 THz from sapphire substrate, and 0.17 THz mixed signals from the sample. These THz wave packets are observed as a result of generation of coherent acoustic phonons propagating in hybrid Au-InGaN quantum wells. The study of these acoustic THz wave generation is crucial for the imaging of nanostructures.

  8. Long-lived electron spins in a modulation doped (100) GaAs quantum well

    NASA Astrophysics Data System (ADS)

    Colton, John; Meyer, David; Clark, Ken; Craft, Daniel; Tanner, Jane; Park, Tyler; White, Phil

    2013-03-01

    We have measured T1 spin lifetimes of a 14 nm modulation-doped (100) GaAs quantum well using a time-resolved pump-probe Kerr rotation technique. The quantum well was selected by tuning the wavelength of the probe laser. T1 lifetimes in excess of 1 microsecond were measured at 1.5 K and 5.5 T, exceeding the typical T2* lifetimes that have been measured in GaAs and II-VI quantum wells by orders of magnitude. We observed effects from nuclear polarization, which were largely removable by simultaneous nuclear magnetic resonance, along with two distinct lifetimes under some conditions that likely result from probing two differently-localized subsets of electrons.

  9. Long-lived electron spins in a modulation doped (100) GaAs quantum well

    NASA Astrophysics Data System (ADS)

    Colton, J. S.; Meyer, D.; Clark, K.; Craft, D.; Cutler, J.; Park, T.; White, P.

    2012-10-01

    We have measured T1 spin lifetimes of a 14 nm modulation-doped (100) GaAs quantum well using a time-resolved pump-probe Kerr rotation technique. The quantum well was selected by tuning the wavelength of the probe laser. T1 lifetimes in excess of 1 μs were measured at 1.5 K and 5.5 T, exceeding the typical T2* lifetimes that have been measured in GaAs and II-VI quantum wells by orders of magnitude. We observed effects from nuclear polarization, which were largely removable by simultaneous nuclear magnetic resonance, along with two distinct lifetimes under some conditions that likely result from probing two differently localized subsets of electrons.

  10. Nonlinear terahertz response of HgTe/CdTe quantum wells

    SciTech Connect

    Chen, Qinjun; Sanderson, Matthew; Zhang, Chao

    2015-08-24

    Without breaking the topological order, HgTe/CdTe quantum wells can have two types of bulk band structure: direct gap type (type I) and indirect gap type (type II). We report that the strong nonlinear optical responses exist in both types of bulk states under a moderate electric field in the terahertz regime. Interestingly, for the type II band structure, the third order conductivity changes sign when chemical potentials lies below 10 meV due to the significant response of the hole excitation close to the bottom of conduction band. Negative nonlinear conductivities suggest that HgTe/CdTe quantum wells can find application in the gain medium of a laser for terahertz radiation. The thermal influences on nonlinear optical responses of HgTe/CdTe quantum wells are also studied.

  11. Modulating retroreflector architecture using multiple quantum wells for free-space optical communications

    NASA Astrophysics Data System (ADS)

    Gilbreath, G. Charmaine; Rabinovich, William S.; Mahon, Rita; Corson, Michael R.; Kline, John F.; Resnick, Joshua H.; Merk, H. C.; Vilcheck, Michael J.

    1998-12-01

    In this paper, we describe a demonstration using a Multiple Quantum Well modulator combined with an optical retroreflector which supported a high speed free space optical data link. Video images were transmitted over an 859 nanometer link at a rate of 460 kilo bits per second, where rate of modulation was limited by demonstration hardware, not the modulator. Reflection architectures for the modulator were used although transmission architectures have also been investigated but are not discussed in this paper. The modulator was a GaAs/Al0.3Ga0.7As quantum well which was designed and fabricated for use as a shutter at the Naval Research Laboratory. We believe these are the first results reported demonstrating a high speed free space optical data link using multiple quantum well shutters combined with retroreflectors for viable free space optical communications.

  12. Impurity-free quantum well intermixing for large optical cavity high-power laser diode structures

    NASA Astrophysics Data System (ADS)

    Kahraman, Abdullah; Gür, Emre; Aydınlı, Atilla

    2016-08-01

    We report on the correlation of atomic concentration profiles of diffusing species with the blueshift of the quantum well luminescence from both as-grown and impurity free quantum wells intermixed on actual large optical cavity high power laser diode structures. Because it is critical to suppress catastrophic optical mirror damage, sputtered SiO2 and thermally evaporated SrF2 were used both to enhance and suppress quantum well intermixing, respectively, in these (Al)GaAs large optical cavity structures. A luminescence blueshift of 55 nm (130 meV) was obtained for samples with 400 nm thick sputtered SiO2. These layers were used to generate point defects by annealing the samples at 950 °C for 3 min. The ensuing Ga diffusion observed as a shifting front towards the surface at the interface of the GaAs cap and AlGaAs cladding, as well as Al diffusion into the GaAs cap layer, correlates well with the observed luminescence blue shift, as determined by x-ray photoelectron spectroscopy. Although this technique is well-known, the correlation between the photoluminescence peak blue shift and diffusion of Ga and Al during impurity free quantum well intermixing on actual large optical cavity laser diode structures was demonstrated with both x ray photoelectron and photoluminescence spectroscopy, for the first time.

  13. Study on effect of quantum well number on performance characteristics of GaN-based vertical cavity surface emitting laser

    NASA Astrophysics Data System (ADS)

    Zandi Goharrizi, A.; Alahyarizadeh, Gh.; Hassan, Z.; Abu Hassan, H.

    2013-05-01

    The effect of number of quantum wells and quantum well thickness on the optical performance of InGaN vertical cavity surface emitting laser (VCSEL) was numerically investigated using Integrated System Engineering Technical Computer Aided Design (ISE TCAD) simulation program. The simulation results indicated that the output power and differential quantum efficiency of the double quantum well (DQW) laser were increased and threshold current decreased as compared to the single and triplet quantum wells VCSEL. Threshold current enhancement in the single quantum well (SQW) is attributed to the electron carrier leakage increasing from active layers because of the lower optical confinement factor. Simulation results show that in the double quantum well, the optical material gain and electron and hole carrier densities are approximately uniform with respect to the SQW and TQW. Also these results indicated that the electron current density in the DQW is the lowest. In the active region, electrical field decreased for the double quantum well because of the built-in electrical field reduction inside the quantum well. Finally the effect of quantum well thickness in DQW GaN-based VCSEL was investigated and it was observed that DQW VCSEL with 3 nm quantum wells thickness had the optimum threshold current.

  14. Inductively coupled BCl3/Cl2 /Ar plasma etching of Al-rich AlGaN

    DOE PAGES

    Douglas, Erica A.; Sanchez, Carlos A.; Kaplar, Robert J.; ...

    2016-12-01

    Varying atomic ratios in compound semiconductors is well known to have large effects on the etching properties of the material. The use of thin device barrier layers, down to 25 nm, adds to the fabrication complexity by requiring precise control over etch rates and surface morphology. The effects of bias power and gas ratio of BCl3 to Cl2 for inductively coupled plasma etching of high Al content AlGaN were contrasted with AlN in this study for etch rate, selectivity, and surface morphology. Etch rates were greatly affected by both bias power and gas chemistry. Here we detail the effects ofmore » small variations in Al composition for AlGaN and show substantial changes in etch rate with regards to bias power as compared to AlN.« less

  15. Two-dimensional electron gas in monolayer InN quantum wells

    SciTech Connect

    Pan, Wei; Dimakis, Emmanouil; Wang, George T.; Moustakas, Theodore D.; Tsui, Daniel C.

    2014-11-24

    We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in monolayer InN quantum wells embedded in GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5×1015 cm-2 and 420 cm2 /Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES.

  16. Double quantum well states in Cu/Co/Cu grown on Co(001)

    NASA Astrophysics Data System (ADS)

    Ling, W. L.; Rotenberg, Eli; Choi, H. J.; Wolfe, J. H.; Toyama, F.; Paik, Silena; Smith, N. V.; Qiu, Z. Q.

    2002-03-01

    A double quantum well (QW) system of Cu/Co(1 ML)/Cu grown on Co/Cu(001) has been investigated by photoemission spectroscopy. Energy spectra of the valence band from one of the Cu QW's have been measured as a function of the other Cu QW thickness. The results show strong resonance between the two Cu QW states across a 1 ML Co barrier. In particular, we observe that quantum well coupling removes the degeneracy of the two Cu QW states, resulting in a state crossing effect. A phase accumulation model is developed to explain these observations.

  17. Nonlinear photonic diode behavior in energy-graded core-shell quantum well semiconductor rod.

    PubMed

    Ko, Suk-Min; Gong, Su-Hyun; Cho, Yong-Hoon

    2014-09-10

    Future technologies require faster data transfer and processing with lower loss. A photonic diode could be an attractive alternative to the present Si-based electronic diode for rapid optical signal processing and communication. Here, we report highly asymmetric photonic diode behavior with low scattering loss, from tapered core-shell quantum well semiconductor rods that were fabricated to have a large gradient in their bandgap energy along their growth direction. Local laser illumination of the core-shell quantum well rods yielded a huge contrast in light output intensities from opposite ends of the rod.

  18. Temperature dependent band offsets in PbSe/PbEuSe quantum well heterostructures

    SciTech Connect

    Simma, M.; Bauer, G.; Springholz, G.

    2012-10-22

    The band offsets of PbSe/Pb{sub 1-x}Eu{sub x}Se multi-quantum wells grown by molecular beam epitaxy are determined as a function of temperature and europium content using temperature-modulated differential transmission spectroscopy. The confined quantum well states in the valence and conduction bands are analyzed using a k{center_dot}p model with envelope function approximation. From the fit of the experimental data, the normalized conduction band offset is determined as 0.45{+-}0.15 of the band gap difference, independently of Eu content up to 14% and temperature from 20 to 300 K.

  19. Global optimization of semiconductor quantum well profile for maximal optical rectification by variational calculus

    NASA Astrophysics Data System (ADS)

    Radovanovic, Jelena; Milanovic, Vitomir; Ikonic, Zoran; Indjin, Dragan

    2002-07-01

    A procedure is proposed for finding the optimal profile of a semiconductor quantum well to obtain maximal value of the optical rectification coefficient. It relies on the variational calculus, i.e. the optimal control theory, combined with the method of simulated annealing, and should deliver a globally optimized profile, unconstrained to any particular class of functional forms. For the purpose of illustration, the procedure is applied to the optimized design of AlxGa1-xAs based quantum wells, for rectification of ℎω = 116 meV (CO2 laser) radiation. The optimal smooth profile may eventually be discretized to make the structure fabrication easier.

  20. Optical lattices of excitons in InGaN/GaN quantum well systems

    SciTech Connect

    Chaldyshev, V. V. Bolshakov, A. S. Zavarin, E. E.; Sakharov, A. V.; Lundin, V. V.; Tsatsulnikov, A. F.; Yagovkina, M. A.

    2015-01-15

    Optical lattices of excitons in periodic systems of InGaN quantum wells with GaN barriers are designed, implemented, and investigated. Due to the collective interaction of quasi-two-dimensional excitons with light and a fairly high binding energy of excitons in GaN, optical Bragg reflection at room temperature is significantly enhanced. To increase the resonance optical response of the system, new structures with two quantum wells in a periodic supercell are designed and implemented. Resonance reflection of 40% at room temperatures for structures with 60 periods is demonstrated.

  1. Effects of Detuning on Control of Intersubband Quantum Well Transitions with Chirped Electromagnetic Pulses

    SciTech Connect

    Blekos, Konstantinos; Terzis, Andreas F.; Simserides, Constantinos; Paspalakis, Emmanuel

    2010-11-10

    We study the interaction of a chirped electromagnetic pulse with intersubband transitions of a double semiconductor quantum well. We specifically consider the interaction of the ground and first excited subbands with the electromagnetic field and use the nonlinear density matrix equations for the description of the system dynamics. These equations are solved numerically for various values of the electron sheet density for a realistic double GaAs/AlGaAs quantum well, and the efficiency of population transfer is discussed with emphasis given to the effects of the detuning of the central frequency of the electromagnetic field from resonance.

  2. Experimental investigation of spin-orbit coupling in n-type PbTe quantum wells

    SciTech Connect

    Peres, M. L.; Monteiro, H. S.; Castro, S. de; Chitta, V. A.; Oliveira, N. F.; Mengui, U. A.; Rappl, P. H. O.; Abramof, E.; Maude, D. K.

    2014-03-07

    The spin-orbit coupling is studied experimentally in two PbTe quantum wells by means of weak antilocalization effect. Using the Hikami-Larkin-Nagaoka model through a computational global optimization procedure, we extracted the spin-orbit and inelastic scattering times and estimated the strength of the zero field spin-splitting energy Δ{sub so}. The values of Δ{sub so} are linearly dependent on the Fermi wave vector (k{sub F}) confirming theoretical predictions of the existence of large spin-orbit coupling in IV-VI quantum wells originated from pure Rashba effect.

  3. Pseudo-square AlGaN/GaN quantum wells for terahertz absorption

    NASA Astrophysics Data System (ADS)

    Beeler, M.; Bougerol, C.; Bellet-Amalric, E.; Monroy, E.

    2014-09-01

    THz intersubband transitions are reported down to 160 μm within AlGaN/GaN heterostructures following a 4-layer quantum well design. In such a geometry, the compensation of the polarization-induced internal electric field is obtained through creating a gradual increase in polarization field throughout the quantum "trough" generated by three low-Al-content layers. The intersubband transitions show tunable absorption with respect to doping level as well as geometrical variations which can be regulated from 53 to 160 μm. They also exhibit tunnel-friendly designs which can be easily integrated into existing intersubband device architectures.

  4. Two-dimensional electron gas in monolayer InN quantum wells

    DOE PAGES

    Pan, Wei; Dimakis, Emmanouil; Wang, George T.; ...

    2014-11-24

    We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in monolayer InN quantum wells embedded in GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5×1015 cm-2 and 420 cm2 /Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES.

  5. Room-Temperature Photocurrent Spectroscopy of GaAs/GaAlAs Multiple Quantum Wells,

    DTIC Science & Technology

    1994-11-15

    Hailong , Wang Qiuning, et al. DO..... ... . .I C- DTIC ~ELECTIEE 199|11O9034 19950109 034Ditiuinnlmed NAIC- ID(RS)T-0385-94 AOSSI.O •z [ A Si8 eol1Y de...MULTIPLE QUANTUM WELLS 5y: Duan Hailong , Wang Qiuning, et al. English pages: 12 Source: Bandaoti Xuebao, Vol. 12, Nr. 7, July 1991, pp. 399-4O4...TEMPERATURE PHOTOCURRENT SPECTROSCOPY OF GaAs/GaAlAs MULTIPLE QUANTUM WELLS DUAN HAILONG , WANG QIUNING, WU RONGHAN, ZENG YIPING and KONG MEIYING

  6. Quantum phase-space picture of Bose-Einstein condensates in a double well

    SciTech Connect

    Mahmud, Khan W.; Perry, Heidi; Reinhardt, William P.

    2005-02-01

    We present a quantum phase-space model of the Bose-Einstein condensate (BEC) in a double-well potential. In a quantum two-mode approximation we examine the eigenvectors and eigenvalues and find that the energy correlation diagram indicates a transition from a delocalized to a fragmented regime. Phase-space information is extracted from the stationary quantum states using the Husimi distribution function. We show that the mean-field phase-space characteristics of a nonrigid physical pendulum arises from the exact quantum states, and that only 4-8 particles per well are needed to reach the semiclassical limit. For a driven double-well BEC, we show that the classical chaotic dynamics is manifest in the dynamics of the quantum states. Phase-space analogy also suggests that a {pi} phase-displaced wave packet put on the unstable fixed point on a separatrix bifurcates to create a superposition of two pendulum rotor states--a macroscopic superposition state of BEC. We show that the choice of initial barrier height and ramping, following a {pi} phase imprinting on the condensate, can be used to generate controlled entangled number states with tunable extremity and sharpness.

  7. Observation of 'scarred' wavefunctions in a quantum well with chaotic electron dynamics

    NASA Astrophysics Data System (ADS)

    Wilkinson, P. B.; Fromhold, T. M.; Eaves, L.; Sheard, F. W.; Miura, N.; Takamasu, T.

    1996-04-01

    QUALITATIVE insight into the properties of a quantum-mechanical system can be gained from the study of the relationship between the system's classical newtonian dynamics, and its quantum dynamics as described by the Schrödinger equation. The Bohr-Sommerfeld quantization scheme-which underlies the historically important Bohr model for hydrogen-like atoms-describes the relationship between the classical and quantum-mechanical regimes, but only for systems with stable, periodic or quasi-periodic orbits1. Only recently has progress been made in understanding the quantization of systems that exhibit non-periodic, chaotic motion. The spectra of quantized energy levels for such systems are irregular, and show fluctuations associated with unstable periodic orbits of the corresponding classical system1-3. These orbits appear as 'scars'-concentrations of probability amplitude-in the wavefunction of the system4. Although wavefunction scarring has been the subject of extensive theoretical investigation5-10, it has not hitherto been observed experimentally in a quantum system. Here we use tunnel-current spectroscopy to map the quantum-mechanical energy levels of an electron confined in a semiconductor quantum well in a high magnetic field10-13. We find clear experimental evidence for wavefunction scarring, in full agreement with theoretical predictions10.

  8. Time-Resolved Tunneling in Gallium-Arsenide Quantum Well Structures

    NASA Astrophysics Data System (ADS)

    Norris, Theodore Blake

    Tunneling in quantum well structures has been a subject of considerable interest in semiconductor physics in recent years. Few time-domain experiments, however, have been brought to bear on the questions of the mechanisms or time-dependence of tunneling. We have developed techniques for a measurement of picosecond and femtosecond optical spectra, and applied them for the first time to the study of tunneling in quantum well structures. We have developed a novel dye oscillator and amplifier to generate optical pulses of 100-fs duration at the 15 -muJ level with a repetition rate of 1 kHz. These pulses were used to generate a white-light continuum, which enabled us to perform optical absorption spectroscopy over the visible and near-infrared regions of the spectrum with a time resolution of about 100 fs. We have also developed an experimental setup for time-resolved photoluminescence appropriate for GaAs quantum well studies, utilizing a picosecond near-infrared dye laser in conjunction with a synchroscan streak camera. Using time resolved photoluminescence, we have studied the tunneling escape rate of electrons from a quantum well through a thin barrier into a continuum, and its dependence on barrier height and width, and on an applied electric field. The observed rates are well-described by a straightforward semiclassical theory. We have investigated the problem of tunneling between coupled quantum wells using both time-resolved luminescence and absorption spectroscopy. We have directly observed in luminescence the buildup of a "charge-transfer" state via electron and hole tunneling in opposite directions, and the dependence of this charge transfer on an electric field. At moderate fields (2.5 times 10^4 V/cm), the charge transfer occurs faster than 20 ps, indicating an unexpectedly fast hole tunneling rate. The time-resolved absorption experiments measure the time electrons initially excited into one quantum well require to tunnel into a second well. The

  9. Carrier dynamics in Ga(NAsP)/Si multi-quantum well heterostructures with varying well thickness

    NASA Astrophysics Data System (ADS)

    Shakfa, M. K.; Woscholski, R.; Gies, S.; Wegele, T.; Wiemer, M.; Ludewig, P.; Jandieri, K.; Baranovskii, S. D.; Stolz, W.; Volz, K.; Heimbrodt, W.; Koch, M.

    2016-05-01

    Time-resolved photoluminescence (TR-PL) measurements have been performed in Ga(NAsP)/(BGa)(AsP) multi-quantum well heterostructures (MQWHs) with different well thicknesses. The studied structures have been pseudomorphically grown on Si substrates by metal organic vapor phase epitaxy (MOVPE) with an N content of about 7%. Experimental results reveal a shortening in the PL decay time with increasing QW thickness, meanwhile, accompanied by a decrease in the PL intensity. We attribute this behavior to an increasing non-radiative recombination rate for broader QWs which arises from an increasing number of defects in the QW material. The emission-energy distribution of the PL decay time is studied at various temperatures. The PL decay time strongly depends on the emission energy at low temperatures and becomes emission-energy-independent close to room temperature. This is discussed in terms of the carrier localization in the studied structures.

  10. Many-Body Effects and Lineshape of Intersubband Transitions in Semiconductor Quantum Wells

    NASA Technical Reports Server (NTRS)

    Ning, Cun-Zheng

    2003-01-01

    Intersubband Transition (ISBT) infrared (IR) absorption and PL in InAs/AlSb were studied for narrow Quantum Wells (QWs). A large redshift was observed (7-10 meV) as temperature increased. A comprehensive many-body theory was developed for ISBTs including contributions of c-c and c-phonon scatterings. Many-body effects were studied systematically for ISBTs. Redshift and linewidth dependence on temperature, as well as spectral features were well explained by theory.

  11. Charge Density Waves in the Electron-Hole Liquid in Coupled Quantum Wells

    NASA Astrophysics Data System (ADS)

    Babichenko, V. S.; Polishchuk, I. Ya.

    2017-02-01

    A many-component electron-hole plasma is considered in coupled quantum wells. The electrons and the holes are localized in the different wells. It is found in our previous works that the electron-hole liquid is the ground state of the system. In this paper it is shown that, as the separation between the wells increases, static charge density waves arise resulting in charge fluctuations which form a honeycomb lattice.

  12. Clamping of the Linewidth Enhancement Factor in Narrow Quantum-Well GRINSCH Semiconductor Lasers

    SciTech Connect

    Bossert, D.; Chow, W.W.; Hader, J.; Koch, S.W.; Moloney, J.V.; Stohls, J.

    1999-01-20

    The linewidth enhancement factor in single quantum-well GRINSCH semiconductor lasers is investigated theoretically and experimentally. For thin wells a small linewidth enhancement factor is obtained which clamps with increasing carrier density, in contrast to the monotonous increase observed for thicker wells. Microscopic many-body calculations reproduce the experimental observations attributing the clamping to a subtle interplay between excitation dependent gain shifts and carrier population distributions.

  13. Smell sensing and visualizing based on multi-quantum wells spatial light modulator

    NASA Astrophysics Data System (ADS)

    Tian, Fengchun; Zhao, Zhenzhen; Jia, Pengfei; Liao, Hailin; Chen, Danyu; Liu, Shouqiong

    2014-09-01

    For the existing drawbacks of traditional detecting methods which use gratings or prisms to detect light intensity distribution at each wavelength of polychromatic light, a novel method based on multi-quantum wells spatial light modulator (MQWs-SLM) has been proposed in this paper. In the proposed method, MQWs-SLM serves as a distribution features detector of the signal light. It is on the basis of quantum-confine Stark effect (QCSE) that the vertical applied voltage can change the absorption features of exciton in multi-quantum wells, and further change the distribution features of the readout polychromatic light of MQWs-SLM. It can be not only an universal detecting method, but also especially recommended to use in the Electronic nose system for features detecting of signal light so as to realize smell sensing and visualizing. The feasibility of the proposed method has been confirmed by mathematical modeling and analysis, simulation experiments and research status analysis.

  14. Spin-orbit interaction effects on the electronic structure of coaxial quantum well wires

    NASA Astrophysics Data System (ADS)

    Ghafari, A.; Vaseghi, B.; Rezaei, G.; Taghizadeh, S. F.; Karimi, M. J.

    2017-01-01

    The finite element method and effective mass approximation are used to investigate the simultaneous effects of SOI, electric and magnetic fields and quantum geometry on the energy and wave function of a cylindrical quantum well wire. Calculations are performed for a typical GaAs /AlxGa1-xAs cylindrical quantum well wire. It is found that SOI, external fields and layers thickness have considerable effects on the energy eigenvalues and functions of the system. Moreover it is shown that the tunneling effect and energy level anti-crossing depend on the SOI and external factors. We have proposed the SOI strength as an agent to control the tunneling effect in typical nanostructures.

  15. Microscopic Modeling of Intersubband Optical Processes in Type II Semiconductor Quantum Wells: Linear Absorption

    NASA Technical Reports Server (NTRS)

    Li, Jian-Zhong; Kolokolov, Kanstantin I.; Ning, Cun-Zheng

    2003-01-01

    Linear absorption spectra arising from intersubband transitions in semiconductor quantum well heterostructures are analyzed using quantum kinetic theory by treating correlations to the first order within Hartree-Fock approximation. The resulting intersubband semiconductor Bloch equations take into account extrinsic dephasing contributions, carrier-longitudinal optical phonon interaction and carrier-interface roughness interaction which is considered with Ando s theory. As input for resonance lineshape calculation, a spurious-states-free 8-band kp Hamiltonian is used, in conjunction with the envelop function approximation, to compute self-consistently the energy subband structure of electrons in type II InAs/AlSb single quantum well structures. We demonstrate the interplay of nonparabolicity and many-body effects in the mid-infrared frequency range for such heterostructures.

  16. Auger-Limited Carrier Recombination and Relaxation in CdSe Colloidal Quantum Wells.

    PubMed

    Baghani, Erfan; O'Leary, Stephen K; Fedin, Igor; Talapin, Dmitri V; Pelton, Matthew

    2015-03-19

    Using time-resolved photoluminescence spectroscopy, we show that two-exciton Auger recombination dominates carrier recombination and cooling dynamics in CdSe nanoplatelets, or colloidal quantum wells. The electron-hole recombination rate depends only on the number of electron-hole pairs present in each nanoplatelet, and is consistent with a two-exciton recombination process over a wide range of exciton densities. The carrier relaxation rate within the conduction and valence bands also depends only on the number of electron-hole pairs present, apart from an initial rapid decay, and is consistent with the cooling rate being limited by reheating due to Auger recombination processes. These Auger-limited recombination and relaxation dynamics are qualitatively different from the carrier dynamics in either colloidal quantum dots or epitaxial quantum wells.

  17. Theory of ultrafast optical manipulation of electron spins in quantum wells

    NASA Astrophysics Data System (ADS)

    Jin, Jinshuang; Li, Xin-Qi

    2005-12-01

    Based on a multiparticle-state stimulated Raman adiabatic passage approach, a comprehensive theoretical study of the ultrafast optical manipulation of electron spins in quantum wells is presented. In addition to corroborating experimental findings [Gupta et al., Science 292, 2458 (2001)], we improve the expression for the optical-pulse-induced effective magnetic field, in comparison with the one obtained via the conventional single-particle ac Stark shift. Further study of the effect of hole-spin relaxation reveals that, while the coherent optical manipulation of electron spin in undoped quantum wells would deteriorate in the presence of relatively fast hole-spin relaxation, the coherent control in doped systems can be quite robust against decoherence. The implications of the present results on quantum dots will also be discussed.

  18. Admittance Investigation of MIS Structures with HgTe-Based Single Quantum Wells.

    PubMed

    Izhnin, Ihor I; Nesmelov, Sergey N; Dzyadukh, Stanislav M; Voitsekhovskii, Alexander V; Gorn, Dmitry I; Dvoretsky, Sergey A; Mikhailov, Nikolaj N

    2016-12-01

    This work presents results of the investigation of admittance of metal-insulator-semiconductor structure based on Hg1 - x Cd x Te grown by molecular beam epitaxy. The structure contains a single quantum well Hg0.35Cd0.65Te/HgTe/Hg0.35Cd0.65Te with thickness of 5.6 nm in the sub-surface layer of the semiconductor. Both the conductance-voltage and capacitance-voltage characteristics show strong oscillations when the metal-insulator-semiconductor (MIS) structure with a single quantum well based on HgTe is biased into the strong inversion mode. Also, oscillations on the voltage dependencies of differential resistance of the space charge region were observed. These oscillations were related to the recharging of quantum levels in HgTe.

  19. Effective one-band approach for the spin splittings in quantum wells

    NASA Astrophysics Data System (ADS)

    Alekseev, P. S.; Nestoklon, M. O.

    2017-03-01

    The spin-orbit interaction of two-dimensional electrons in quantum wells grown from the III-V semiconductors consists of two parts with different symmetry: the Bychkov-Rashba and the Dresselhaus terms. The last term is usually attributed to the bulk spin-orbit Hamiltonian which reflects the Td symmetry of the zincblende lattice. While it is known that the quantum well interfaces may also contribute to the Dresselhaus term, the exact structure and relative importance of the interface and bulk contributions are not well understood. To deal with this problem, we perform tight-binding calculations of the spin splittings of the electron levels in [100] GaAs/AlGaAs quantum wells. We show that the obtained spin splittings can be adequately described within the one-band electron Hamiltonian containing, together with the bulk contribution, the two interface contributions to the Dresselhaus term. The magnitude of the interface contribution to the spin-orbit interaction for sufficiently narrow quantum wells is of the same order as the bulk contribution.

  20. Optical orientation of electron spins in GaAs quantum wells

    NASA Astrophysics Data System (ADS)

    Pfalz, S.; Winkler, R.; Nowitzki, T.; Reuter, D.; Wieck, A. D.; Hägele, D.; Oestreich, M.

    2005-04-01

    We present a detailed experimental and theoretical analysis of the optical orientation of electron spins in GaAs/AlAs quantum wells. Using time and polarization resolved photoluminescence excitation spectroscopy, the initial degree of electron-spin polarization is measured as a function of excitation energy for a sequence of quantum wells with well widths between 63 and 198 Å. The experimental results are compared with an accurate theory of excitonic absorption taking fully into account electron-hole Coulomb correlations and heavy-hole-light-hole coupling. We find in wide quantum wells that the measured initial degree of polarization of the luminescence follows closely the spin polarization of the optically excited electrons calculated as a function of energy. This implies that the orientation of the electron spins is essentially preserved when the electrons relax from the optically excited high-energy states to quasithermal equilibrium of their momenta. Due to initial spin relaxation, the measured polarization in narrow quantum wells is reduced by a constant factor that does not depend on the excitation energy.

  1. On the cascade capture of electrons at donors in GaAs quantum wells

    SciTech Connect

    Aleshkin, V. Ya.

    2015-09-15

    The impact parameter for the cascade capture of electrons at a charged donor in a GaAs quantum well is calculated. A simple approximate analytical expression for the impact parameter is suggested. The temperature dependence of the impact parameter for the case of electron scattering by the piezoelectric potential of acoustic phonons is determined.

  2. The temporal dynamics of impurity photoconductivity in quantum wells in GaAs

    SciTech Connect

    Aleshkin, V. Ya. E-mail: aleshkin@ipm.sci-nnov.ru

    2015-10-15

    A theory of cascade capture at charged donors in quantum wells (QWs) is developed without using the Fokker-Planck approximation, which is not valid in QWs. The time dependences of impurity photoconductivity and photoelectron concentration in GaAs QWs are determined. The cascade capture time as a function of the charge donor concentration is calculated.

  3. Instantaneous amplitude and frequency dynamics of coherent wave mixing in semiconductor quantum wells

    SciTech Connect

    Chemla, D.S.

    1993-06-30

    This article reviews recent investigations of nonlinear optical processes in semiconductors. Section II discusses theory of coherent wave mixing in semiconductors, with emphasis on resonant excitation with only one exciton state. Section III reviews recent experimental investigations of amplitude and phase of coherent wave-mixing resonant with quasi-2d excitons in GaAs quantum wells.

  4. Dispersion equation and eigenvalues for quantum wells using spectral parameter power series

    SciTech Connect

    Castillo-Perez, Raul; Oviedo-Galdeano, Hector; Rabinovich, Vladimir S.

    2011-04-15

    We derive a dispersion equation for determining eigenvalues of inhomogeneous quantum wells in terms of spectral parameter power series and apply it for the numerical treatment of eigenvalue problems. The method is algorithmically simple and can be easily implemented using available routines of such environments for scientific computing as MATLAB.

  5. Wavelength Shifting in InP based Ultra-thin Quantum Well Infrared Photodetectors

    NASA Technical Reports Server (NTRS)

    Sengupta, D. K.; Gunapala, S. D.; Bandara, S. V.; Pool, F.; Liu, J. K.; McKelvy, M.

    1998-01-01

    We have demonstrated red-shifting of the wavelength response of a bound-to-continuum p-type ultra-thin InGaAs/Inp quantum well infrared photodetector after growth via rapid thermal annealing. Compared to the as-grown detector, the peak spectral response of the annealed detector was shifted to longer wavelength without any major degradation in responsivity characteristics.

  6. Electric field effect on the second-order nonlinear optical properties in semiparabolic quantum wells

    NASA Astrophysics Data System (ADS)

    Yuan, Jian-Hui; Chen, Ni; Zhang, Yan; Mo, Hua; Zhang, Zhi-Hai

    2016-03-01

    Electric field effect on the second-order nonlinear optical properties in semiparabolic quantum wells are studied theoretically. Both the second-harmonic generation susceptibility and nonlinear optical rectification depend dramatically on the direction and the strength of the electric field. Numerical results show that both the second-harmonic generation susceptibility and nonlinear optical rectification are always weakened as the electric field increases where the direction of the electric field is along the growth direction of the quantum wells, which is in contrast to the conventional case. However, the second-harmonic generation susceptibility is weakened, but the nonlinear optical rectification is strengthened as the electric field increases where the direction of the electric field is against the growth direction of the quantum wells. Also it is the blue (or red) shift of the resonance that is induced by increasing of the electric field when the direction of the electric field is along (or against) the growth direction of the quantum wells. Finally, the resonant peak and its corresponding to the resonant energy are also taken into account.

  7. Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells

    NASA Astrophysics Data System (ADS)

    Bel'kov, V. V.; Ganichev, S. D.; Schneider, Petra; Back, C.; Oestreich, M.; Rudolph, J.; Hägele, D.; Golub, L. E.; Wegscheider, W.; Prettl, W.

    2003-11-01

    We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time-resolved photoluminescence. A theoretical model takes into account spin splitting of conduction and valence bands.

  8. High resolution InSb quantum well ballistic nanosensors for room temperature applications

    SciTech Connect

    Gilbertson, Adam; Cohen, L. F.; Lambert, C. J.; Solin, S. A.

    2013-12-04

    We report the room temperature operation of a quasi-ballistic InSb quantum well Hall sensor that exhibits a high frequency sensitivity of 560nT/√Hz at 20uA bias current. The device utilizes a partitioned buffer layer design that suppresses leakage currents through the mesa floor and can sustain large current densities.

  9. Interaction between Rashba and Zeeman effects in a quantum well channel.

    PubMed

    Choi, Won Young; Kwon, Jae Hyun; Chang, Joonyeon; Han, Suk Hee; Koo, Hyun Cheol

    2014-05-01

    The applied field induced Zeeman effect interferes with Rashba effect in a quantum well system. The angle dependence of Shubnikov-de Haas oscillation shows that the in-plane term of the applied field changes the intrinsic Rashba induced spin splitting. The total effective spin-orbit interaction parameter is determined by the vector sum of the Rashba field and the applied field.

  10. Strained GaN quantum-well FETs on single crystal bulk AlN substrates

    NASA Astrophysics Data System (ADS)

    Qi, Meng; Li, Guowang; Ganguly, Satyaki; Zhao, Pei; Yan, Xiaodong; Verma, Jai; Song, Bo; Zhu, Mingda; Nomoto, Kazuki; Xing, Huili Grace; Jena, Debdeep

    2017-02-01

    We report the first realization of molecular beam epitaxy (MBE) grown strained GaN quantum well field-effect transistors on single-crystal bulk AlN substrates. The fabricated double heterostructure FETs exhibit a two-dimensional electron gas (2DEG) density in the excess of 2 × 1013/cm2. The ohmic contacts to the 2DEG channel were formed by the n+ GaN MBE regrowth process, with a contact resistance of 0.13 Ω . mm. The Raman spectroscopy using the quantum well as an optical marker reveals the strain in the quantum well and strain relaxation in the regrown GaN contacts. A 65-nm-long rectangular-gate device showed a record high DC drain current drive of 2.0 A/mm and peak extrinsic transconductance of 250 mS/mm. Small-signal RF performance of the device achieved the current gain cutoff frequency fT˜120 GHz. The DC and RF performances demonstrate that bulk AlN substrates offer an attractive alternative platform for strained quantum well nitride transistors for the future high-voltage and high-power microwave applications.

  11. Fractional Quantum Hall Effect at ν = 1 / 2 in Hole Systems Confined to GaAs Wide Quantum Wells

    NASA Astrophysics Data System (ADS)

    Hasdemir, Sukret; Liu, Yang; Graninger, Aurelius; Shayegan, Mansour; Pfeiffer, Loren; West, Ken; Baldwin, Kirk; Winkler, Roland

    2014-03-01

    We observe fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor ν = 1 / 2 in two-dimensional hole systems confined to GaAs quantum wells of width 30 to 50 nm and having bilayer-like charge distributions. The ν = 1 / 2 FQHE is stable when the charge distribution is symmetric and only in a range of intermediate densities, qualitatively similar to what is seen in two-dimensional electron systems confined to approximately twice wider GaAs quantum wells. Despite the complexity of the hole Landau level structure, originating from the coexistence and mixing of the heavy- and light-hole states, we find the hole ν = 1 / 2 FQHE to be consistent with a two-component, Halperin-Laughlin (Ψ331) state. We acknowledge support through the DOE BES (DE-FG02-00-ER45841) for measurements, and the Gordon and Betty Moore Foundation (Grant GBMF2719), Keck Foundation, and the NSF (DMR-0904117, DMR-1305691 and MRSEC DMR-0819860) for sample fabrication. Work at Arg.

  12. Super-resolution with a positive epsilon multi-quantum-well super-lens

    SciTech Connect

    Bak, A. O.; Giannini, V.; Maier, S. A.; Phillips, C. C.

    2013-12-23

    We design an anisotropic and dichroic quantum metamaterial that is able to achieve super-resolution without the need for a negative permittivity. When exploring the parameters of the structure, we take into account the limits of semiconductor fabrication technology based on quantum well stacks. By heavily doping the structure with free electrons, we infer an anisotropic effective medium with a prolate ellipsoid dispersion curve which allows for near-diffractionless propagation of light (similar to an epsilon-near-zero hyperbolic lens). This, coupled with low absorption, allows us to resolve images at the sub-wavelength scale at distances 6 times greater than equivalent natural materials.

  13. Excitonic localization at macrostep edges in AlGaN/AlGaN multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Hou, Mengjun; Qin, Zhixin; Zhang, Lisheng; Han, Tianyang; Wang, Mingxing; Xu, Fujun; Wang, Xinqiang; Yu, Tongjun; Fang, Zheyu; Shen, Bo

    2017-04-01

    Double peaks at wavelength of 276 and 290 nm are observed for AlGaN/AlGaN multiple quantum wells (MQWs). Cathodoluminescence (CL) mappings identify that the emission at 290 nm originates from the macrostep edges. Potential minima induced by local variation of QW thickness and Ga incorporation are found along the step edges, where quantum wires (QWRs) are formed. The lateral advance rate of macrostep (∼310 nm/h) is obtained by investigating the distribution of QWRs. Temperature-dependent CL spectrum suggest that thermal quenching for 290 nm emission is dramatically suppressed compared with that for conventional QWs emission, which shows excitonic localization characteristics of QWRs.

  14. Final Report: Free Standing Quantum Wells, August 15, 1996 - May 31, 1999

    SciTech Connect

    Williams, M.D.; Lee, H.W.H.; Collins, J.

    1999-10-11

    Recent advances in microfabrication techniques in conjunction with the precise growth of layers of single crystalline materials by epitaxial growth techniques allow the creation of new electro-optic microstructures. We have selectively etched compositionally modulated 111-v heterostructures to produce quantum wells (QW's) which are confined on both sides by air or vacuum. The material is patterned so to have the QW's suspended horizontally between vertical support posts. This structure is ideal for probing the local properties of solids, e.g., the interaction of quantum confined states with surface or interface states.

  15. Super-resolution with a positive epsilon multi-quantum-well super-lens

    NASA Astrophysics Data System (ADS)

    Bak, A. O.; Giannini, V.; Maier, S. A.; Phillips, C. C.

    2013-12-01

    We design an anisotropic and dichroic quantum metamaterial that is able to achieve super-resolution without the need for a negative permittivity. When exploring the parameters of the structure, we take into account the limits of semiconductor fabrication technology based on quantum well stacks. By heavily doping the structure with free electrons, we infer an anisotropic effective medium with a prolate ellipsoid dispersion curve which allows for near-diffractionless propagation of light (similar to an epsilon-near-zero hyperbolic lens). This, coupled with low absorption, allows us to resolve images at the sub-wavelength scale at distances 6 times greater than equivalent natural materials.

  16. Low-temperature illumination and annealing of ultrahigh quality quantum wells

    NASA Astrophysics Data System (ADS)

    Samani, M.; Rossokhaty, A. V.; Sajadi, E.; Lüscher, S.; Folk, J. A.; Watson, J. D.; Gardner, G. C.; Manfra, M. J.

    2014-09-01

    The effects of low-temperature illumination and annealing on fractional quantum Hall (FQH) characteristics of a GaAs/AlGaAs quantum well are investigated. Illumination alone, below 1 K, decreases the density of the two-dimensional electron gas (2DEG) electrons by more than an order of magnitude and resets the sample to a repeatable initial state. Subsequent thermal annealing at a few Kelvin restores the original density and dramatically improves FQH characteristics. A reliable illumination and annealing recipe is developed that yields an energy gap of 600 mK for the 5/2 state.

  17. Generic mechanisms of decoherence of quantum oscillations in magnetic double-well systems

    NASA Astrophysics Data System (ADS)

    M. Chudnovsky, Eugene

    2004-05-01

    Fundamental conservation laws mandate parameter-free generic mechanisms of decoherence of quantum oscillations in double-well systems. We consider two examples: tunneling of the magnetic moment in nanomagnets and tunneling between macroscopic current states in SQUIDs. In both cases the decoherence occurs via emission of phonons and photons at the oscillation frequency. We also show that in a system of identical qubits the decoherence greatly increases due to the superradiance of electromagnetic and sound waves. Our findings have important implications for building elements of quantum computers based upon nanomagnets and SQUIDs.

  18. Self-consistent theory of electronic states in topological broken-gap quantum wells

    NASA Astrophysics Data System (ADS)

    Winkler, R.

    Recently broken-gap quantum wells made of InAs/GaSb/AlSb have raised great interest as they may show a gate-tunable phase transition from a trivial phase to a topologically protected quantum spin Hall phase. We present a quantitative self-consistent theory of electronic states in such systems taking into account the charge transfer between different layers which can substantially modify the level structure including the phase boundary between the inverted and non-inverted regime. We also discuss spin effects and the unusual Landau fans in a quantizing magnetic field. Work supported by the NSF Grant DMR-1310199.

  19. Phase Recovery Acceleration of Quantum-Dot Semiconductor Optical Amplifiers by Optical Pumping to Quantum-Well Wetting Layer

    NASA Astrophysics Data System (ADS)

    Kim, Jungho

    2013-11-01

    We theoretically investigate the phase recovery acceleration of quantum-dot (QD) semiconductor optical amplifiers (SOAs) by means of the optical pump injection to the quantum-well (QW) wetting layer (WL). We compare the ultrafast gain and phase recovery responses of QD SOAs in either the electrical or the optical pumping scheme by numerically solving 1088 coupled rate equations. The ultrafast gain recovery responses on the order of sub-picosecond are nearly the same for the two pumping schemes. The ultrafast phase recovery is not significantly accelerated by increasing the electrical current density, but greatly improved by increasing the optical pumping power to the QW WL. Because the phase recovery time of QD SOAs with the optical pumping scheme can be reduced down to several picoseconds, the complete phase recovery can be achieved when consecutive pulse signals with a repetition rate of 100 GHz is injected.

  20. Terahertz quantum Hall effect for spin-split heavy-hole gases in strained Ge quantum wells

    NASA Astrophysics Data System (ADS)

    Failla, M.; Keller, J.; Scalari, G.; Maissen, C.; Faist, J.; Reichl, C.; Wegscheider, W.; Newell, O. J.; Leadley, D. R.; Myronov, M.; Lloyd-Hughes, J.

    2016-11-01

    Spin-split heavy-hole gases in strained germanium quantum wells were characterized by polarisation-resolved terahertz time-domain spectroscopy. Effective masses, carrier densities, g-factors, transport lifetimes, mobilities and Rashba spin-splitting energies were evaluated, giving quantitative insights into the influence of strain. The Rashba coefficient was found to lower for samples with higher biaxial compressive strain, while heavy-hole mobilities were enhanced to over 1.5× {10}6 cm2 V-1 s-1 at 3 K. This high mobility enabled the observation of the optical quantum Hall effect at terahertz frequencies for spin-split two-dimensional heavy-holes, evidenced as plateaux in the transverse magnetoconductivity at even and odd filling factors.

  1. Monte Carlo modeling of the dual-mode regime in quantum-well and quantum-dot semiconductor lasers.

    PubMed

    Chusseau, Laurent; Philippe, Fabrice; Disanto, Filippo

    2014-03-10

    Monte Carlo markovian models of a dual-mode semiconductor laser with quantum well (QW) or quantum dot (QD) active regions are proposed. Accounting for carriers and photons as particles that may exchange energy in the course of time allows an ab initio description of laser dynamics such as the mode competition and intrinsic laser noise. We used these models to evaluate the stability of the dual-mode regime when laser characteristics are varied: mode gains and losses, non-radiative recombination rates, intraband relaxation time, capture time in QD, transfer of excitation between QD via the wetting layer... As a major result, a possible steady-state dual-mode regime is predicted for specially designed QD semiconductor lasers thereby acting as a CW microwave or terahertz-beating source whereas it does not occur for QW lasers.

  2. Theory Of An Electro-Optic Modulator Based On Quantum Wells In A Semiconductor etalon

    NASA Astrophysics Data System (ADS)

    Guy, D. R. P.; Apsley, N.; Taylor, L. L.; Bass, S. J.; Klipstein, P. C.

    1987-08-01

    We present the design of an electro-optic modulator which is based on the quantum-confined Stark effect (QCSE) in GaAs quantum wells contained within the central layer of a Fabry-Perot etalon. The etalon mirrors are quarter wave stacks of Ga0.7A10.3As and AlAs, eliminating the need for the application of anti-reflection coatings. p-i-n-doping is employed with the undoped Or stack sandwiched between doped mirrors, enabling electric fields of the order of 105Vcm-1 to be readily developed across the quantum wells. Placing a multiple quantum well structure within an etalon resonant cavity gives flexibility of design in terms of operating wavelength and mode: Light incident perpendicular to the QW stack is modulated through the operation of the QCSE on the QW excitons, either electro-refractively by a change in the real part of the QW refractive index producing a wavelength modulation of the narrow-band Fabry-Perot transmission resonance or in electro-absorptive mode. The semi-empirical theory uses conventional multilayer optical matrix methods together with a recent theory of the QCSE which has been tested against the results of electro-reflectance experiments. In electro-absorption mode we find a ratio of 19:1 on:off at 857.5nm for 8 quantum wells. In electro-refractive mode, using 32 wells, we predict modulation from 10% to 76% reflection at 883nm. These figures exclude substrate effects. Extension of the theory to other materials systems is readily accomplished. We present the reflectivity spectrum of a high quality etalon in In0.53Ga0.47As/InP and find good agreement with the predictions of the optical matrix model.

  3. A quantum-well inversion channel heterostructure as a multifunctional component for optoelectronic integrated circuits

    NASA Astrophysics Data System (ADS)

    Sargood, Stephen K.; Taylor, Geoffrey W.; Claisse, Paul R.; Vang, Timothy; Cooke, Paul; Docter, Daniel P.; Kiely, Philip A.; Burrus, Charles A., Jr.

    1993-01-01

    Attention is given to an approach to optoelectronic integration employing a universal heterostructure with a single GaAs quantum-well active region. The fabrication technology was developed for GHz bandwidth applications by using ion implantation techniques for interdevice electrical isolation and surface planarization, and reactive ion-etching to realize a self-aligned transistor-based heterostructure. The design, fabrication, and characterization of various heterostructures are discussed in the light of optoelectronic integration and the implementation of ion implantation disordering to realize low-loss self-aligned waveguides for on-chip signal routing. The ultimate performance of the devices using a GaAs quantum well is considered, as well as the development of this technology for improved performance using strained InGaAs wells.

  4. Control of the probe absorption in coupled quantum wells in two dimensions

    NASA Astrophysics Data System (ADS)

    Kang, Chengxian; Ma, Yangcheng; Wang, Zhiping; Yu, Benli

    2016-06-01

    We investigate the probe absorption of a weak probe field in two dimensions (the so-called two-dimensional probe absorption) in an asymmetric two coupled quantum wells. It is found that, due to the joint quantum interference induced by the standing-wave and coherent coupling fields, the probe absorption can be easily controlled via adjusting the system parameters in two dimensions. Most importantly, the pattern of probe absorption can be localized at a particular position and the maximal probability of finding the pattern in one period of the standing-wave fields reaches unity by properly adjusting the system parameters. Thus, our scheme may provide some technological applications in solid-state optoelectronics and quantum information science.

  5. Circularly polarized photoluminescence related to A(+) centers in GaAs/AlGaAs quantum wells

    SciTech Connect

    Petrov, P. V.; Ivanov, Yu. L. Romanov, K. S.; Tonkikh, A. A.; Averkiev, N. S.

    2006-09-15

    Magnetic-field-induced circular polarization of the photoluminescence peak related to A(+) centers in quantum wells is measured for the first time. It is shown that, in a magnetic field of 4 T, the polarization degree is as high as 13%, while the peak splitting is virtually absent. A theory describing the behavior of the spin fine structure of A(+) centers in a magnetic field is developed. Experimental results agree well with the theoretical calculations.

  6. Plasmonic photocatalytic reactions enhanced by hot electrons in a one-dimensional quantum well

    SciTech Connect

    Huang, H. J. E-mail: hhjhuangkimo@gmail.com; Liu, B. H.; Lin, C. T.; Su, W. S.

    2015-11-15

    The plasmonic endothermic oxidation of ammonium ions in a spinning disk reactor resulted in light energy transformation through quantum hot charge carriers (QHC), or quantum hot electrons, during a chemical reaction. It is demonstrated with a simple model that light of various intensities enhance the chemical oxidization of ammonium ions in water. It was further observed that light illumination, which induces the formation of plasmons on a platinum (Pt) thin film, provided higher processing efficiency compared with the reaction on a bare glass disk. These induced plasmons generate quantum hot electrons with increasing momentum and energy in the one-dimensional quantum well of a Pt thin film. The energy carried by the quantum hot electrons provided the energy needed to catalyze the chemical reaction. The results indicate that one-dimensional confinement in spherical coordinates (i.e., nanoparticles) is not necessary to provide an extra excited state for QHC generation; an 8 nm Pt thin film for one-dimensional confinement in Cartesian coordinates can also provide the extra excited state for the generation of QHC.

  7. Plasmonic photocatalytic reactions enhanced by hot electrons in a one-dimensional quantum well

    NASA Astrophysics Data System (ADS)

    Huang, H. J.; Liu, B.-H.; Lin, C.-T.; Su, W. S.

    2015-11-01

    The plasmonic endothermic oxidation of ammonium ions in a spinning disk reactor resulted in light energy transformation through quantum hot charge carriers (QHC), or quantum hot electrons, during a chemical reaction. It is demonstrated with a simple model that light of various intensities enhance the chemical oxidization of ammonium ions in water. It was further observed that light illumination, which induces the formation of plasmons on a platinum (Pt) thin film, provided higher processing efficiency compared with the reaction on a bare glass disk. These induced plasmons generate quantum hot electrons with increasing momentum and energy in the one-dimensional quantum well of a Pt thin film. The energy carried by the quantum hot electrons provided the energy needed to catalyze the chemical reaction. The results indicate that one-dimensional confinement in spherical coordinates (i.e., nanoparticles) is not necessary to provide an extra excited state for QHC generation; an 8 nm Pt thin film for one-dimensional confinement in Cartesian coordinates can also provide the extra excited state for the generation of QHC.

  8. Sub-milliwatt AlGaN nanowire tunnel junction deep ultraviolet light emitting diodes on silicon operating at 242 nm

    NASA Astrophysics Data System (ADS)

    Zhao, S.; Sadaf, S. M.; Vanka, S.; Wang, Y.; Rashid, R.; Mi, Z.

    2016-11-01

    We report AlGaN nanowire light emitting diodes (LEDs) operating in the ultraviolet-C band. The LED structures are grown by molecular beam epitaxy on Si substrate. It is found that with the use of the n+-GaN/Al/p+-AlGaN tunnel junction (TJ), the device resistance is reduced by one order of magnitude, and the light output power is increased by two orders of magnitude, compared to AlGaN nanowire LEDs without TJ. For unpackaged TJ ultraviolet LEDs emitting at 242 nm, a maximum output power of 0.37 mW is measured, with a peak external quantum efficiency up to 0.012%.

  9. Highly ordered horizontal indium gallium arsenide/indium phosphide multi-quantum-well in wire structure on (001) silicon substrates

    NASA Astrophysics Data System (ADS)

    Han, Yu; Li, Qiang; Lau, Kei May

    2016-12-01

    We report the characteristics of indium gallium arsenide stacked quantum structures inside planar indium phosphide nanowires grown on exact (001) silicon substrates. The morphological evolution of the indium phosphide ridge buffers inside sub-micron trenches has been studied, and the role of inter-facet diffusion in this process is discussed. Inside a single indium phosphide nanowire, we are able to stack quantum structures including indium gallium arsenide flat quantum wells, quasi-quantum wires, quantum wires, and ridge quantum wells. Room temperature photoluminescence measurements reveal a broadband emission spectrum centered at 1550 nm. Power dependent photoluminescence analysis indicates the presence of quasi-continuum states. This work thus provides insights into the design and growth process control of multiple quantum wells in wire structures for high performance nanowire lasers on a silicon substrate with 1550 nm band emission.

  10. Characterization and modeling of tensil-strained gallium arsenide/indium aluminum arsenic quantum wells

    NASA Astrophysics Data System (ADS)

    Meng, Qingru

    This dissertation intended to provide a foundation for the development of electroabsorptive quantum well devices based on tensile strained GaAs/InAlAs double quantum well (DQW) structures which, in turn, provide polarization insensitivity in the optical response. The effects of structural parameters and electric field on eigenstates and optical properties were examined experimentally and theoretically. A self-consistent analysis program was developed for this study. Samples used in this work were grown by solid-source MBE. The in-situ calibration of alloy composition and growth rate by reflection high energy electron diffraction (RHEED) was compared with ex-situ characterization techniques including double-crystal X-ray diffractometry (DCXD) and transmission electron microscopy (TEM). Quantum confinement effects, coupling effects, and strain effects on carrier eigenstates and interband transitions were investigated by low temperature photoluminescence (PL) and theoretical analysis. Depending on the amount of tensile strain and quantum confinement, electron-light hole transitions can be brought to the absorption edge, which is desired for achieving polarization independence in quantum well structures. Compared to single quantum well structures, the uniqueness of DQWs lies in the interaction of eigenstates in different wells through a finite potential barrier. Energy band diagrams, eigenstates, and absorption coefficients were examined theoretically as a function of electric field applied perpendicularly to the quantum well layers of tensile strained GaAs/InAlAs DQWs with various doping profiles (n-i-n and p-i-n). Low temperature PL measurements were performed on these samples under various bias conditions. It was shown that as far as polarization independence is concerned, the coupled DQW may provide some advantages over the single well. A self-consistent analysis program for tensile strained GaAs/InAlAs DQWs was developed to deal with the quasi-static condition of

  11. Quantum-Carnot engine for particle confined to 2D symmetric potential well

    SciTech Connect

    Belfaqih, Idrus Husin Sutantyo, Trengginas Eka Putra Prayitno, T. B.; Sulaksono, Anto

    2015-09-30

    Carnot model of heat engine is the most efficient cycle consisting of isothermal and adiabatic processes which are reversible. Although ideal gas usually used as a working fluid in the Carnot engine, Bender used quantum particle confined in 1D potential well as a working fluid. In this paper, by following Bender we generalize the situation to 2D symmetric potential well. The efficiency is express as the ratio of the initial length of the system to the final length of the compressed system. The result then is shown that for the same ratio, 2D potential well is more efficient than 1D potential well.

  12. Quantum-Carnot engine for particle confined to 2D symmetric potential well

    NASA Astrophysics Data System (ADS)

    Belfaqih, Idrus Husin; Sutantyo, Trengginas Eka Putra; Prayitno, T. B.; Sulaksono, Anto

    2015-09-01

    Carnot model of heat engine is the most efficient cycle consisting of isothermal and adiabatic processes which are reversible. Although ideal gas usually used as a working fluid in the Carnot engine, Bender used quantum particle confined in 1D potential well as a working fluid. In this paper, by following Bender we generalize the situation to 2D symmetric potential well. The efficiency is express as the ratio of the initial length of the system to the final length of the compressed system. The result then is shown that for the same ratio, 2D potential well is more efficient than 1D potential well.

  13. Limits to mobility in InAs quantum wells with nearly lattice-matched barriers

    NASA Astrophysics Data System (ADS)

    Shojaei, B.; Drachmann, A. C. C.; Pendharkar, M.; Pennachio, D. J.; Echlin, M. P.; Callahan, P. G.; Kraemer, S.; Pollock, T. M.; Marcus, C. M.; Palmstrøm, C. J.

    2016-12-01

    The growth and density dependence of the low temperature mobility of a series of two-dimensional electron systems confined to unintentionally doped, low extended defect density InAs quantum wells with A l1 -xG axSb barriers are reported. The electron-mobility-limiting scattering mechanisms were determined by utilizing dual-gated devices to study the dependence of mobility on carrier density and electric field independently. Analysis of possible scattering mechanisms indicate the mobility was limited primarily by rough interfaces in narrow quantum wells and a combination of alloy disorder and interface roughness in wide wells at high carrier density within the first occupied electronic subband. At low carrier density, the functional dependence of mobility on carrier density provided evidence of Coulombic scattering from charged defects. A gate-tuned electron mobility exceeding 750 000 c m2V-1s-1 was achieved at a sample temperature of 2 K.

  14. Plasma reflection from highly Si-doped InGaAs/AlAsSb quantum wells

    SciTech Connect

    Gozu, Shin-ichiro; Mozume, Teruo; Ishikawa, Hiroshi

    2010-01-04

    In this study, we have evaluated the plasma reflection from highly Si-doped In{sub 0.53}Ga{sub 0.47}As/AlAs{sub 0.56}Sb{sub 0.44} multiple quantum wells (MQWs) in order to understand the plasma effect in quantum wells. Plasma resonances were clearly observed in these MQWs for carrier densities larger than 7.5x10{sup 18} /cm{sup 3}. By comparing the experimentally obtained wavenumbers of these plasma resonances with those obtained from a theory and an empirical fit of bulk InGaAs which includes the effect of conduction band non-parabolicity, the plasma resonances of MQWs were found to match well with the empirical fit. This implied that the conduction band non-parabolicity played a role in modifying the plasma resonance, as in bulk InGaAs.

  15. Photoreflectance studies of electronic transitions in quantum well structures under high presure

    NASA Astrophysics Data System (ADS)

    Chandrasekhar, Holakere R.; Chandrasekhar, Meera

    1990-08-01

    Superlattices of alternating layers of semiconductors were first proposed1 in 1970, and since then a variety of structures have been grown. Their technological importance has spurred considerable experimental and theoretical work. The unique feature of quantum confinement of carriers has made possible unusual devices. By combining various semiconductors and alloys of ffl-V, 11-TV and group IV materials, unusual band lineups between neighboring layers have been obtained. Both lattice matched and strained layer structures have been grown. In this article we will focus on the electronic structure of the quantum well heterostructures under the external perturbation of hydrostatic pressure. Pressure has been used extensively to investigate materials in regions of phase space not otherwise accessib1. lu the study of quantum well structures, it has also been used to move band edges in a controlled fashion, and alter band lineups, allowing the determination of band offsets with an accuracy that was not possible without the use of pressure. As in bulk semiconductors, optical techniques provide powerful tools in studying the electronic states in quantum well heterostructures (QWH). Photoluminescence (PL) spectroscopy is only sensitive to spectral features associated with energy states close to the bottom of the well due to rapid thermalization of carriers. Photoluminescence excitation (PLE) is often limited by the availability of tunable lasers. Photoreflectance (PR), on the other hand, can provide a rich structure due to both symmetry allowed and forbidden transitions encompassing the entire quantum well. This sensitivity is due to the derivative nature of the spectroscopy. Experiments can be carried out easily at different temperatures and over wide spectral regions. This article is organized as follows. In section 2 we will review some of the theoretical calculations of electronic bands in quantum wells and discuss the changes expected under pressure. In Sec. 3, we

  16. Interface and photoluminescence characteristics of graphene-(GaN/InGaN)n multiple quantum wells hybrid structure

    NASA Astrophysics Data System (ADS)

    Wang, Liancheng; Liu, Zhiqiang; Zhang, Zi-Hui; Tian, Ying Dong; Yi, Xiaoyan; Wang, Junxi; Li, Jinmin; Wang, Guohong

    2016-04-01

    The effects of graphene on the optical properties of active system, e.g., the InGaN/GaN multiple quantum wells, are thoroughly investigated and clarified. Here, we have investigated the mechanisms accounting for the photoluminescence reduction for the graphene covered GaN/InGaN multiple quantum wells hybrid structure. Compared to the bare multiple quantum wells, the photoluminescence intensity of graphene covered multiple quantum wells showed a 39% decrease after excluding the graphene absorption losses. The responsible mechanisms have been identified with the following factors: (1) the graphene two dimensional hole gas intensifies the polarization field in multiple quantum wells, thus steepening the quantum well band profile and causing hole-electron pairs to further separate; (2) a lower affinity of graphene compared to air leading to a weaker capability to confine the excited hot electrons in multiple quantum wells; and (3) exciton transfer through non-radiative energy transfer process. These factors are theoretically analysed based on advanced physical models of semiconductor devices calculations and experimentally verified by varying structural parameters, such as the indium fraction in multiple quantum wells and the thickness of the last GaN quantum barrier spacer layer.

  17. Electric field dependent Electroreflectance of GaAs/AlGaAs multiple quantum well Bragg structure at second quantum state

    NASA Astrophysics Data System (ADS)

    Nakarmi, Mim; Shakya, Naresh; Chaldyshev, Vladimir

    Electroreflectance Spectroscopy was employed to study the effect of electric field on the excitonic transitions in a GaAs/AlGaAs multiple quantum well (MQW) Bragg structure. The sample used in this experiment consists of 60 periods of quantum well structures with GaAs well layer (~13 nm) and AlGaAs barrier layer (~94 nm), grown by molecular beam expitaxy on a semi-insulating GaAs substrate. The sample structure was designed to coincide the Bragg resonance peak with the x(e2-hh2) exciton transitions. We observed a significant enhancement of excitonic feature around the x(e2-hh2) exciton transition due to the double resonance along with the sharp features of x(e1-hh1) and x(e1-lh1) ground state exciton transitions by tuning the angle of incidence of the light. We will present the results on electric field dependent electroreflectance measurements of this structure and discuss the effect of electric field on the first and second energy states.

  18. Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells.

    PubMed

    Kowsz, Stacy J; Young, Erin C; Yonkee, Benjamin P; Pynn, Christopher D; Farrell, Robert M; Speck, James S; DenBaars, Steven P; Nakamura, Shuji

    2017-02-20

    We report a device that monolithically integrates optically pumped (20-21) III-nitride quantum wells (QWs) with 560 nm emission on top of electrically injected QWs with 450 nm emission. The higher temperature growth of the blue light-emitting diode (LED) was performed first, which prevented thermal damage to the higher indium content InGaN of the optically pumped QWs. A tunnel junction (TJ) was incorporated between the optically pumped and electrically injected QWs; this TJ enabled current spreading in the buried LED. Metalorganic chemical vapor deposition enabled the growth of InGaN QWs with high radiative efficiency, while molecular beam epitaxy was leveraged to achieve activated buried p-type GaN and the TJ. This initial device exhibited dichromatic optically polarized emission with a polarization ratio of 0.28. Future improvements in spectral distribution should enable phosphor-free polarized white light emission.

  19. Optimisation of InGaAsP quantum well cells for hybrid solar-thermophotovoltaic applications

    NASA Astrophysics Data System (ADS)

    Rohr, Carsten; Connolly, James P.; Barnham, Keith W. J.; Ballard, Ian; Griffin, Paul R.; Nelson, Jenny; Button, Chris; Clark, Janice

    1999-03-01

    We discuss quantum well cells (QWCs) in the quaternary system In1-xGaxAsyP1-y lattice-matched to the InP substrate (x≈0.47y) for the use in solar and thermophotovoltaic (TPV) applications. The deep lattice-matched wells of up to y=1 (In0.53Ga0.47As) can be incorporated without any strain. The effective band-gap for absorption in these quaternary QWCs can be tailored (up to ˜1.7μm) to produce the ideal band-gap for a given blackbody or selective-emitter spectrum while retaining a comparatively high efficiency for the solar spectrum. This has a great potential for higher-efficiency cells, especially for hybrid solar-TPV applications. We present the results of a new model for the external quantum efficiency of InGaAsP QWCs. The model calculates the spectral response of multi-layer InGaAsP photovoltaic cells with and without quantum wells. It is in very good agreement with the experimental spectral response of InGaAsP QWCs with a variety of designs and therefore is an important tool for the optimisation of these cells. Besides improvements in quantum well geometry, processing and material quality, the high efficiencies we obtain can be even further increased by additional features such as the use of back surface reflectors. We also investigate how these cells perform under several different illuminations such as solar and blackbody spectra as well as narrow-band selective-emitter spectra from erbia and ytterbia comparing them to lattice-matched InGaAs monolithic interconnected modules. We conclude that the InGaAsP QWC system is a very promising candidate for high-efficiency photovoltaic cells for hybrid solar-TPV applications.

  20. Finite Momentum Pairing and Spatially Varying Order Parameter in Proximitized HgTe Quantum Wells

    NASA Astrophysics Data System (ADS)

    Yacoby, Amir

    Conventional s-wave superconductivity is understood to arise from singlet pairing of electrons with opposite Fermi momenta, forming Cooper pairs whose net momentum is zero. Several recent studies have focused on structures where such conventional s-wave superconductors are coupled to systems with an unusual configuration of electronic spin and momentum at the Fermi surface. Under these conditions, the nature of the paired state can be modified and the system may even undergo a topological phase transition. Here we present measurements and theoretical calculations of several HgTe quantum wells coupled to either aluminum or niobium superconductors and subject to a magnetic field in the plane of the quantum well. By studying the oscillatory response of Josephson interference to the magnitude of the in-plane magnetic field, we find that the induced pairing within the quantum well oscillates between singlet and triplet pairing and is spatially varying. Cooper pairs acquire a tunable momentum that grows with magnetic field strength, directly reflecting the response of the spin-dependent Fermi surfaces to the in-plane magnetic field. Our new understanding of the interplay between spin physics and superconductivity introduces a way to spatially engineer the order parameter, as well as a general framework within which to investigate electronic spin texture at the Fermi surface of materials.

  1. A versatile phenomenological model for the S-shaped temperature dependence of photoluminescence energy for an accurate determination of the exciton localization energy in bulk and quantum well structures

    NASA Astrophysics Data System (ADS)

    Dixit, V. K.; Porwal, S.; Singh, S. D.; Sharma, T. K.; Ghosh, Sandip; Oak, S. M.

    2014-02-01

    Temperature dependence of the photoluminescence (PL) peak energy of bulk and quantum well (QW) structures is studied by using a new phenomenological model for including the effect of localized states. In general an anomalous S-shaped temperature dependence of the PL peak energy is observed for many materials which is usually associated with the localization of excitons in band-tail states that are formed due to potential fluctuations. Under such conditions, the conventional models of Varshni, Viña and Passler fail to replicate the S-shaped temperature dependence of the PL peak energy and provide inconsistent and unrealistic values of the fitting parameters. The proposed formalism persuasively reproduces the S-shaped temperature dependence of the PL peak energy and provides an accurate determination of the exciton localization energy in bulk and QW structures along with the appropriate values of material parameters. An example of a strained InAs0.38P0.62/InP QW is presented by performing detailed temperature and excitation intensity dependent PL measurements and subsequent in-depth analysis using the proposed model. Versatility of the new formalism is tested on a few other semiconductor materials, e.g. GaN, nanotextured GaN, AlGaN and InGaN, which are known to have a significant contribution from the localized states. A quantitative evaluation of the fractional contribution of the localized states is essential for understanding the temperature dependence of the PL peak energy of bulk and QW well structures having a large contribution of the band-tail states.

  2. High performance LWIR microbolometer with Si/SiGe quantum well thermistor and wafer level packaging

    NASA Astrophysics Data System (ADS)

    Roer, Audun; Lapadatu, Adriana; Bring, Martin; Wolla, Erik; Hohler, Erling; Kittilsland, Gjermund

    2011-11-01

    An uncooled microbolometer with peak responsivity in the long wave infrared region of the electromagnetic radiation is developed at Sensonor Technologies. It is a 384 x 288 focal plane array with a pixel pitch of 25μm, based on monocrystalline Si/SiGe quantum wells as IR sensitive material. The high sensitivity (TCR) and low 1/f noise are the main performance characteristics of the product. The frame rate is maximum 60Hz and the output interface is digital (LVDS). The quantum well thermistor material is transferred to the read-out integrated circuit (ROIC) by direct wafer bonding. The ROIC wafer containing the released pixels is bonded in vacuum with a silicon cap wafer, providing hermetic encapsulation at low cost. The resulting wafer stack is mounted in a standard ceramic package. In this paper the architecture of the pixels and the ROIC, the wafer packaging and the electro-optical measurement results are presented.

  3. Impact of strain on the electronic properties of InAs/GaSb quantum well systems

    NASA Astrophysics Data System (ADS)

    Tiemann, L.; Mueller, S.; Wu, Q.-S.; Tschirky, T.; Ensslin, K.; Wegscheider, W.; Troyer, M.; Soluyanov, A. A.; Ihn, T.

    2017-03-01

    Electron-hole hybridization in InAs/GaSb double quantum well structures leads to the formation of a mini-band-gap. We experimentally and theoretically studied the impact of strain on the transport properties of this material system. Thinned samples were mounted to piezoelectric elements to exert strain along the [011] and [001] crystal directions. When the Fermi energy is tuned through the minigap, the resistivity at the charge neutrality point is found to be susceptible to external strain. In the electron and hole regimes, strain influences the Landau level structure. By analyzing the intrinsic strain from the epitaxial growth and the external strain from the piezo elements and combining our experimental results with numerical simulations of strained and unstrained quantum wells, we can illustrate why the InAs/GaSb material system is regularly found to be semimetallic.

  4. Structure and quantum well states in silicene nanoribbons on Ag(110)

    NASA Astrophysics Data System (ADS)

    Feng, Baojie; Li, Hui; Meng, Sheng; Chen, Lan; Wu, Kehui

    2016-03-01

    We have performed scanning tunneling microscopy/spectroscopy (STM/STS) study and first-principles calculations to investigate the atomic structure and electronic properties of silicon nanoribbons (SiNRs) grown on Ag(110). Despite the extensive research on SiNRs in the last decades, its atomic structure is still not fully understood so far. In this report we determine that the structure of SiNRs/Ag(110) is armchair silicene nanoribbon with reconstructed edges. Meanwhile, pronounced quantum well states (QWS) in SiNRs were observed and their energy spectrum was systematically measured. The QWS are due to the confinement of quasiparticles perpendicular to the nanoribbon and can be well explained by the theory of one-dimensional (1D) "particle-in-a-box" model in quantum mechanics.

  5. Birefringence in the transparency region of GaAs/AlAs multiple quantum wells

    SciTech Connect

    Sirenko, A.A.; Etchegoin, P.; Fainstein, A.; Eberl, K.; Cardona, M.

    1999-09-01

    Birefringence measurements for in-plane propagation of light below the absorption edge in GaAs/AlAs multiple quantum wells (MQW{close_quote}s) are reported for different well/barrier widths. A remarkable drop in the low-frequency limit of the birefringence has been observed for MQW structures with small periods and ascribed to the presence of local fields. The temperature dependence of the birefringence is also studied and complementary results in InP quantum dot structures are also presented. The latter exhibit a strong resonant birefringence, which can be explained by the reduced dimensionality in the joint density of states for optical transitions in the dots. {copyright} {ital 1999} {ital The American Physical Society}

  6. Two-color corrugated quantum-well infrared photodetector for remote temperature sensing

    NASA Astrophysics Data System (ADS)

    Chen, C. J.; Choi, K. K.; Chang, W. H.; Tsui, D. C.

    1998-01-01

    A quantum-well infrared photodetector (QWIP) based on the corrugated light-coupling scheme has been fabricated and tested for remote temperature sensing. The QWIP consists of two stacks of multiple quantum wells (MQWs), each sensitive in one of the atmospheric infrared transmission windows and each with a separate readout circuit. High optical coupling efficiency is obtained in both wavelength ranges, demonstrating the use of the corrugated structure for two-color detection. By monitoring the ratio of the photocurrent generated simultaneously in each MQW stack, the temperature of the object emitting the radiation can be determined, regardless of its emissivity and the geometrical factors. This temperature sensing ability is tested by using a blackbody radiator with precision temperature control as the target. The agreement between the measured and the preset temperatures indicates that the corrugated QWIP is capable of precision thermometric measurements.

  7. Electron paramagnetic resonance study of the nuclear spin dynamics in an AlAs quantum well

    NASA Astrophysics Data System (ADS)

    Shchepetilnikov, A. V.; Frolov, D. D.; Nefyodov, Yu. A.; Kukushkin, I. V.; Tiemann, L.; Reichl, C.; Dietsche, W.; Wegscheider, W.

    2016-12-01

    The nuclear spin dynamics in an asymmetrically doped 16-nm AlAs quantum well grown along the [001] direction has been studied experimentally using the time decay of the Overhauser shift of paramagnetic resonance of conduction electrons. The nonzero spin polarization of nuclei causing the initial observed Overhauser shift is due the relaxation of the nonequilibrium spin polarization of electrons into the nuclear subsystem near electron paramagnetic resonance owing to the hyperfine interaction. The measured relaxation time of nuclear spins near the unity filling factor is (530 ± 30) min at the temperature T = 0.5 K. This value exceeds the characteristic spin relaxation times of nuclei in GaAs/AlGaAs heterostructures by more than an order of magnitude. This fact indicates the decrease in the strength of the hyperfine interaction in the AlAs quantum well in comparison with GaAs/AlGaAs heterostructures.

  8. Investigation of heterodyne performance of quantum-well detectors. Final report

    SciTech Connect

    Simpson, M.L.; Hutchinson, D.P.; Calabretta, J.

    1994-09-23

    The purpose of this Cooperative Research and Development Agreement (CRADA) between Martin Marietta Energy Systems Inc., (Contractor) and Martin Marietta Electronic Missles (Participant) is the determination of the heterodyne characteristics of quantum-well detectors. The Participant has developed a quantum-well infrared imaging video detector with very low light level characteristics. A further improvement in low-level infrared detection could be achieved if this device can be operated in the coherent or heterodyne mode. A major program in the Physics Division of Oak Ridge National Laboratory (ORNL) presently uses individual heterodyne infrared detectors in a system under development for fusion diagnostics. An imaging infrared heterodyne detector would represent a major breakthrough in this area and would have major implications for other plasma diagnostic programs. The Participant is also studying the application of this device in the area of laser radar.

  9. Artificial Graphene in Nano-patterned GaAs Quantum Wells

    NASA Astrophysics Data System (ADS)

    Wang, Sheng; Scarabelli, Diego; Kuznetsova, Yuliya Y.; Pfeiffer, Loren N.; West, Ken; Gardner, Geoff C.; Manfra, Michael J.; Pellegrini, Vittorio; Wind, Shalom J.; Pinczuk, Aron

    We report the realization of artificial graphene (AG) in a 2D electron gas in a highly tunable semiconductor quantum well system. Very short period (as small as 40 nm) honeycomb lattices were formed in a GaAs heterostructure by electron beam lithography followed by dry etching. Characterization of the AG samples by photoluminescence at low temperature (about 4K) indicates modulation of 2D electron states. Low-lying electron excitations observed by resonant inelastic light scattering and interpreted with a calculated AG band structure confirm the formation of AG bands with a well-defined Dirac cone, evidence for the presence of massless Dirac fermions. These results suggest that engineered semiconductor nano-scale structures can serve as advanced quantum simulators for probing novel electron behavior in low dimensional systems. Supported by DOE-BES Award DE-SC0010695.

  10. Strong photoluminescence from ultrathin silicon (110) quantum wells at room temperature

    NASA Astrophysics Data System (ADS)

    Zhu, Xiaodong; Lu, Jiwu; Gao, Yuhan; Yuan, Shuai; Zhou, Ning; Xie, Min; Zheng, Zejie; Zhao, Yi

    2017-02-01

    Strong room-temperature photoluminescence (PL) from SiO2/Si(110)/SiO2 quantum wells (QWs) is observed, for the first time. The PL intensity increases with the decrease of the Si(110) well thickness. Furthermore, when the upper SiO2 layer is removed, no PL peaks could be observed. But the luminescence is recovered when the samples were exposed to air for several months with the re-formation of Si-SiO x interface, and slightly dependent of temperature. These results indicate that both of the quantum confinement effect and the interface effect play an important role in the luminescence properties of Si(110) QWs.

  11. Quantum-confined electronic states in atomically well-defined graphene nanostructures.

    PubMed

    Hämäläinen, Sampsa K; Sun, Zhixiang; Boneschanscher, Mark P; Uppstu, Andreas; Ijäs, Mari; Harju, Ari; Vanmaekelbergh, Daniël; Liljeroth, Peter

    2011-12-02

    Despite the enormous interest in the properties of graphene and the potential of graphene nanostructures in electronic applications, the study of quantum-confined states in atomically well-defined graphene nanostructures remains an experimental challenge. Here, we study graphene quantum dots (GQDs) with well-defined edges in the zigzag direction, grown by chemical vapor deposition on an Ir(111) substrate by low-temperature scanning tunneling microscopy and spectroscopy. We measure the atomic structure and local density of states of individual GQDs as a function of their size and shape in the range from a couple of nanometers up to ca. 20 nm. The results can be quantitatively modeled by a relativistic wave equation and atomistic tight-binding calculations. The observed states are analogous to the solutions of the textbook "particle-in-a-box" problem applied to relativistic massless fermions.

  12. Strain Compensation in Single ZnSe/CdSe Quantum Wells: Analytical Model and Experimental Evidence.

    PubMed

    Rieger, Torsten; Riedl, Thomas; Neumann, Elmar; Grützmacher, Detlev; Lindner, Jörg K N; Pawlis, Alexander

    2017-03-08

    The lattice mismatch between CdSe and ZnSe is known to limit the thickness of ZnSe/CdSe quantum wells on GaAs (001) substrates to about 2-3 monolayers. We demonstrate that this thickness can be enhanced significantly by using In0.12Ga0.88As pseudo substrates, which generate alternating tensile and compressive strains in the ZnSe/CdSe/ZnSe layers resulting in an efficient strain compensation. This method enables to design CdSe/ZnSe quantum wells with CdSe thicknesses ranging from 1 to 6 monolayers, covering the whole visible spectrum. The strain compensation effect is investigated by high resolution transmission electron microscopy and supported by molecular statics simulations. The model approach with the supporting experimental measurements is sufficiently general to be also applied to other highly mismatched material combinations for the design of advanced strained heterostructures.

  13. Excitonic spin-splitting in quantum wells with a tilted magnetic field.

    PubMed

    dos Santos, L Fernandes; Castelano, L K; Padilha, J X; Pusep, Y; Marques, G E; Smirnov, D; Bakarov, A K; Toropov, A I; Lopez-Richard, V

    2016-02-10

    This work aims to investigate the effects of magnetic field strength and direction on the electronic properties and optical response of GaAs/AlGaAs-based heterostructures. An investigation of the excitonic spin-splitting of a disordered multiple quantum well embedded in a wide parabolic quantum well is presented. The results for polarization-resolved photoluminescence show that the magnetic field dependencies of the excitonic spin-splitting and photoluminescence linewidth are crucially sensitive to magnetic field orientation. Our experimental results are in good agreement with the calculated Zeeman splitting obtained by the Luttinger model, which predicts a hybridization of the spin character of states in the valence band under tilted magnetic fields.

  14. On the Matsubara-Toyozawa Formalism to Treat Impurity Bands in δ-DOPED Quantum Wells

    NASA Astrophysics Data System (ADS)

    da Cunha Lima, I. C.; da Silva, A. Ferreira

    We obtain the density of the ground and excited states for electrons bound to shallow donors in a δ-dopping of a quantum well. We use the Matsubara-Toyozawa technique to treat disorder. The impurity bands are calculated for a concentration of 9.4×109 cm-2. We show that for this concentration of interest the excited bands do not overlap the ground state.

  15. High Performance InGaAs/GaAs Quantum Well Infrared Photodetectors

    NASA Technical Reports Server (NTRS)

    Gunapala, S. D.; Park, J. S.; Lin, T. L.; Pike, W. T.; Liu, J. K.; Bandara, K. M. S. V.; Levine, B. F.; Sarusi, G.

    1994-01-01

    We have measured the optical and transport properties of In(0.2)Ga(0.8)As/GaAs quantum well infrared photodetectors based on bound-to-bound, bound-to-quasibound, and bound-to-continuum intersubband transitions. Excellent hot electron transport and high detectivity D*=1.8 x 1O(exp 10) cm square root of Hz/W (at lambda(sub p)=16.7 microns) were achieved at temperature T=40 K.

  16. High-Power AlGaAs Quantum-Well Lasers On Si Substrates

    NASA Technical Reports Server (NTRS)

    Kim, Jae-Hoon; Lang, Robert J.; Radhakrishnan, Gouri; Katz, Joseph

    1991-01-01

    AlxGa1-xAs lasers of graded-index-of-refraction, separate-confinement-heterostructure, single-quantum-well type fabricated on silicon substrates by migration-enhanced molecular-beam epitaxy followed by metalorganic vapor-phase epitaxy. They are intermediate products of continuing effort to develop low-threshold-current, high-efficiency lasers for parallel optical interconnections between large-scale optoelectronic integrated circuits.

  17. Growth and Excitonic Emission of CdSe Ultra-Thin Quantum Wells Without Thickness Fluctuations

    NASA Astrophysics Data System (ADS)

    Alfaro-Martínez, Adrián; Hernández-Calderón, Isaac

    2007-04-01

    Due to the cation and anion surface reconstruction properties, one Cd-Se atomic layer epitaxy (ALE) cycle produces a coverage of 0.5 CdSe monolayers. In this work we demonstrate that even when an odd number of cycles are deposited to produce ultra-thin quantum wells, under the appropriate growth conditions, the photoluminescence spectrum indicates the absence of thickness fluctuations. A single excitonic peak is detected in the whole sample.

  18. Thermoelectric properties of Mg2X (X = Si, Ge) based bulk and quantum well systems

    NASA Astrophysics Data System (ADS)

    Yelgel, Övgü Ceyda

    2017-01-01

    Mg2X (X = Si, Ge) compounds are promising thermoelectric materials for middle temperature applications due to good thermoelectric properties, nontoxicity, and abundantly available constituent elements. So far, these materials used in applications have all been in bulk form. Herein we report a full theory of thermoelectric transport properties of 3D bulk and 2D quantum well systems. The main aim of this present work is to show the effect of quantum confinement on the enhancement of the thermoelectric figure of merit theoretically. Results are given for n-type Mg2 Si0.5 Ge0.5 solid solutions and n-type Mg2Si/Mg2Ge/Mg2Si quantum well systems where the values of well widths are taken as 10 nm, 15 nm, and 20 nm, respectively. The n-type doping is made by using Sb- and La-elements as dopants. Experimental results for solid solutions are included to provide demonstration of proof of principle for the theoretical model applied for 3D bulk structures. The maximum thermoelectric figure of merits of Lax Mg2 -x Si0.49 Ge0.5 Sb0.01 solid solutions are obtained to be 0.64 and 0.56 at 800 K for x = 0 and x = 0.01 sample, respectively. While, at the same temperature, due to the relatively low phonon thermal conductivity the state-of-the-art ZT values of 2.41 and 2.26 have been attained in the Mg2Si/Mg2Ge/Mg2Si quantum well samples with 0.01 wt. % Sb-doped and 0.01 wt. % Sb- and 0.01 wt. % La-doped, respectively.

  19. Quantum-well-laser mirror degradation investigated by microprobe optical spectroscopy

    NASA Astrophysics Data System (ADS)

    Corvasce, C.; Spagnolo, Vincenzo; Scamarcio, Gaetano; Lugara, M.; Adduci, F.; Ferrara, Michele; Sibilano, Michele; Pellegrino, Sergio; del Giudice, Massimo; Re, M. G.

    1995-11-01

    A study of facet degradation of InGaAs quantum well lasers is reported. We tune up a Raman and photoluminescence micro-probe technique for determining the crystal structure and the temperature profile of the cladding layer, in steps of approximately 1 micrometer, with a temperature resolution better than 1 degree Kelvin. The cladding layer composition and cross- section temperature profile have been monitored during operation. A clear correlation between the facet degradation and the type of protective coating is found.

  20. Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells

    PubMed Central

    2011-01-01

    Transient spin grating experiments are used to investigate the electron spin diffusion in intrinsic (110) GaAs/AlGaAs multiple quantum well at room temperature. The measured spin diffusion length of optically excited electrons is about 4 μm at low spin density. Increasing the carrier density yields both a decrease of the spin relaxation time and the spin diffusion coefficient Ds. PMID:21711662

  1. Characterization of effective masses in InGaAsN quantum well structures by computer simulations

    NASA Astrophysics Data System (ADS)

    Wartak, M. S.; Weetman, P.

    2005-12-01

    Effective masses of holes in In0.36Ga0.64As1-xNx/GaAs quantum well structures were determined and analyzed. A ten-band k •p Hamiltonian matrix was used in the calculations. Systematic numerical results have been presented for a large range of material and structural parameters. Our results show that significant variation in the effective masses is possible by adjusting the relevant parameters.

  2. Guided-wave photodiode using through-absorber quantum-well-intermixing and methods thereof

    DOEpatents

    Skogen, Erik J.

    2016-10-25

    The present invention includes a high-speed, high-saturation power detector (e.g., a photodiode) compatible with a relatively simple monolithic integration process. In particular embodiments, the photodiode includes an intrinsic bulk absorption region, which is grown above a main waveguide core including a number of quantum wells (QWs) that are used as the active region of a phase modulator. The invention also includes methods of fabricating integrated photodiode and waveguide assemblies using a monolithic, simplified process.

  3. Simulation of the dark current of quantum-well infrared photodetectors

    NASA Astrophysics Data System (ADS)

    Claro, M. S.; Fernandes, F. M.; da Silva, E. C. F.; Quivy, A. A.

    2017-04-01

    We developed a method to calculate the dark current of quantum-well infrared photodetectors without the need to fit any experimental data or to perform extra transport measurements on other samples. The temperature range of the calculations was extended below 30 K by combining a thermionic model valid at high temperature and a miniband-transport model valid at low temperature whenever any superlattice characteristics were relevant in the device.

  4. Spin-triplet negatively charged excitons in GaAs quantum wells

    NASA Astrophysics Data System (ADS)

    Shields, A. J.; Pepper, M.; Simmons, M. Y.; Ritchie, D. A.

    1995-09-01

    We observe magnetic-field-induced transitions in the interband optical spectra of GaAs quantum wells with a small excess electron density. Their strengthening with excess electron density, in addition to their light polarization dependence, demonstrate that these correspond to (excited) spin-triplet states of the negatively charged exciton. The second-electron binding energy of both singlet and triplet X- strengthens with field.

  5. A 980 nm pseudomorphic single quantum well laser for pumping erbium-doped optical fiber amplifiers

    NASA Technical Reports Server (NTRS)

    Larsson, A.; Forouhar, S.; Cody, J.; Lang, R. J.; Andrekson, P. A.

    1990-01-01

    The authors have fabricated ridge waveguide pseudomorphic InGaAs/GaAs/AlGaAs GRIN-SCH SQW (graded-index separate-confinement-heterostructure single-quantum-well) lasers, emitting at 980 nm, with a maximum output power of 240 mW from one facet and a 22 percent coupling efficiency into a 1.55-micron single-mode optical fiber. These lasers satisfy the requirements on efficient and compact pump sources for Er3+-doped fiber amplifiers.

  6. Ag colloids and arrays for plasmonic non-radiative energy transfer from quantum dots to a quantum well

    NASA Astrophysics Data System (ADS)

    Murphy, Graham P.; Gough, John J.; Higgins, Luke J.; Karanikolas, Vasilios D.; Wilson, Keith M.; Garcia Coindreau, Jorge A.; Zubialevich, Vitaly Z.; Parbrook, Peter J.; Bradley, A. Louise

    2017-03-01

    Non-radiative energy transfer (NRET) can be an efficient process of benefit to many applications including photovoltaics, sensors, light emitting diodes and photodetectors. Combining the remarkable optical properties of quantum dots (QDs) with the electrical properties of quantum wells (QWs) allows for the formation of hybrid devices which can utilize NRET as a means of transferring absorbed optical energy from the QDs to the QW. Here we report on plasmon-enhanced NRET from semiconductor nanocrystal QDs to a QW. Ag nanoparticles in the form of colloids and ordered arrays are used to demonstrate plasmon-mediated NRET from QDs to QWs with varying top barrier thicknesses. Plasmon-mediated energy transfer (ET) efficiencies of up to ∼25% are observed with the Ag colloids. The distance dependence of the plasmon-mediated ET is found to follow the same d ‑4 dependence as the direct QD to QW ET. There is also evidence for an increase in the characteristic distance of the interaction, thus indicating that it follows a Förster-like model with the Ag nanoparticle-QD acting as an enhanced donor dipole. Ordered Ag nanoparticle arrays display plasmon-mediated ET efficiencies up to ∼21%. To explore the tunability of the array system, two arrays with different geometries are presented. It is demonstrated that changing the geometry of the array allows a transition from overall quenching of the acceptor QW emission to enhancement, as well as control of the competition between the QD donor quenching and ET rates.

  7. Quantum well structures for plasma instability-based terahertz radiation sources

    NASA Astrophysics Data System (ADS)

    Butler, Justin John

    This thesis is a theoretical study of the electron transport and response properties of epitaxially grown, low-dimensional semiconductor quantum well heterostructures, under steady-state, current driven (nonequilibrium) conditions. These structures operate in the Terahertz (THz) frequency and submillimeter wavelength range, and are the leading candidates for compact, coherent sources of THz radiation. This work is divided into two parts: Part I consists of an analytical study of the individual quantum well units, and the tunneling transmission characteristics, for which reasonably accurate algebraic expressions are obtained. An underlying philosophy of this work is the desire to describe each of the key components involved, independently, through these simple analytical expressions. In Part II the numerical study of the transport and radiation response of the quantum well structures specially designed to generate THz radiation based on the plasma instability concept is presented. Several models are proposed which describe the overall electron transport and which determine the underlying nonequilibrium steady state. In particular, the key features of the experimental current-voltage (IV) curves for such structures are explained, and the corresponding response properties are determined. The modeling and simulation of these potential optoelectronic devices is a crucial tool for elucidating the precise mechanisms and interplay of the many microscopic processes which give rise to the observed behavior. Key features of the radiation response arise from the intersubband plasma instability which occurs due to the resonant interaction of an emission and an absorption mode, and these features are compared with the experimental observations.

  8. Scattering mechanisms in shallow undoped Si/SiGe quantum wells

    NASA Astrophysics Data System (ADS)

    Laroche, D.; Huang, S.-H.; Nielsen, E.; Chuang, Y.; Li, J.-Y.; Liu, C. W.; Lu, T. M.

    2015-10-01

    We report the magneto-transport study and scattering mechanism analysis of a series of increasingly shallow Si/SiGe quantum wells with depth ranging from ˜ 100 nm to ˜ 10 nm away from the heterostructure surface. The peak mobility increases with depth, suggesting that charge centers near the oxide/semiconductor interface are the dominant scattering source. The power-law exponent of the electron mobility versus density curve, μ ∝ nα, is extracted as a function of the depth of the Si quantum well. At intermediate densities, the power-law dependence is characterized by α ˜ 2.3. At the highest achievable densities in the quantum wells buried at intermediate depth, an exponent α ˜ 5 is observed. We propose and show by simulations that this increase in the mobility dependence on the density can be explained by a non-equilibrium model where trapped electrons smooth out the potential landscape seen by the two-dimensional electron gas.

  9. Theory of electron g-tensor in bulk and quantum-well semiconductors

    NASA Astrophysics Data System (ADS)

    Lau, Wayne H.; Flatte', Michael E.

    2004-03-01

    We present quantitative calculations for the electron g-tensors in bulk and quantum-well semiconductors based on a generalized P.p envelope function theory solved in a fourteen-band restricted basis set. The dependences of g-tensor on structure, magnetic field, carrier density, temperature, and spin polarization have been explored and will be described. It is found that at temperatures of a few Kelvin and fields of a few Tesla, the g-tensors for bulk semiconductors develop quasi-steplike dependences on carrier density or magnetic field due to magnetic quantization, and this effect is even more pronounced in quantum-well semiconductors due to the additional electric quantization along the growth direction. The influence of quantum confinement on the electron g-tensors in QWs is studied by examining the dependence of electron g-tensors on well width. Excellent agreement between these calculated electron g-tensors and measurements [1-2] is found for GaAs/AlGaAs QWs. This work was supported by DARPA/ARO. [1] A. Malinowski and R. T. Harley, Phys. Rev. B 62, 2051 (2000);[2] Le Jeune et al., Semicond. Sci. Technol. 12, 380 (1997).

  10. Study of intersubband transitions in GaN-ZnGeN2 coupled quantum wells

    NASA Astrophysics Data System (ADS)

    Han, Lu; Lieberman, Colin; Zhao, Hongping

    2017-03-01

    In this work, we design and analyze a closely lattice-matched wide bandgap GaN-ZnGeN2 coupled quantum well (QW) structure targeting for near-infrared (IR) (λ ≤ 3 um) intersubband transition for quantum cascade laser applications. The coupled quantum well structure comprised two GaN wells separated by a thin ZnGeN2 barrier layer. The QW active region is surrounded by thick ZnGeN2 layers as barriers. The computations of the electron-phonon and electron-photon scattering rates are carried out by employing the Fermi's golden rule for transitions. The calculation takes into consideration the conservation of energy and momentum in scattering processes. The coupled QW structure is optimized through tuning the confined subband energy levels in the conduction band to achieve (1) electron-LO phonon resonant scattering when the energy separation between the first and second conduction subband levels matches the phonon energy of GaN (92 meV); and (2) dominant electron-photon transition in near-IR between the third and second conduction subband levels.

  11. Depth resolved cathodoluminescence and microanalysis of ZnCdSe/ZnSe quantum well heterostructures

    NASA Astrophysics Data System (ADS)

    Shakhmin, Alexey A.; Sedova, Irina V.; Sorokin, Sergey V.; Zamoryanskaya, Maria V.

    2013-04-01

    The novel approaches to study the II-VI-based laser heterostructures using cathodoluminescence and electron probe microanalysis techniques are described in detail. The heterostructures were grown by molecular beam epitaxy on GaAs (0 0 1) substrates and consist of bottom and top ZnMgSSe cladding layers and ZnCdSe/ZnSe quantum well embedded in Zn(Mg)SSe/ZnSe graded index waveguide. The microanalysis technique based on the intensity measurements of characteristic X-rays has been applied to determine both the composition of ZnCdSe quantum well layer and its position within heterostructure. The depth resolved cathodoluminescence technique has been applied for the transport studies of electron beam generated carriers in heterostructure. The cathodoluminescence intensity of ZnCdSe quantum well has been measured as a function of electron beam energy. The Monte-Carlo simulations of carrier generation distribution within the heterostructure under electron beam irradiation have been used for fitting of experimental results. It made possible the nondestructive characterization of the multilayer heterostructure to estimate both deficiency and carrier transport length.

  12. Scattering mechanisms in shallow undoped Si/SiGe quantum wells

    SciTech Connect

    Laroche, Dominique; Huang, S. -H.; Nielsen, Erik; Chuang, Y.; Li, J. -Y.; Liu, C. W.; Lu, Tzu -Ming

    2015-10-07

    We report the magneto-transport study and scattering mechanism analysis of a series of increasingly shallow Si/SiGe quantum wells with depth ranging from ~ 100 nm to ~ 10 nm away from the heterostructure surface. The peak mobility increases with depth, suggesting that charge centers near the oxide/semiconductor interface are the dominant scattering source. The power-law exponent of the electron mobility versus density curve, μ ∝ nα, is extracted as a function of the depth of the Si quantum well. At intermediate densities, the power-law dependence is characterized by α ~ 2.3. At the highest achievable densities in the quantum wells buried at intermediate depth, an exponent α ~ 5 is observed. Lastly, we propose and show by simulations that this increase in the mobility dependence on the density can be explained by a non-equilibrium model where trapped electrons smooth out the potential landscape seen by the two-dimensional electron gas.

  13. Controlled finite momentum pairing and spatially varying order parameter in proximitized HgTe quantum wells

    NASA Astrophysics Data System (ADS)

    Hart, Sean; Ren, Hechen; Kosowsky, Michael; Ben-Shach, Gilad; Leubner, Philipp; Brüne, Christoph; Buhmann, Hartmut; Molenkamp, Laurens W.; Halperin, Bertrand I.; Yacoby, Amir

    2017-01-01

    Conventional s-wave superconductivity arises from singlet pairing of electrons with opposite Fermi momenta, forming Cooper pairs with zero net momentum. Recent studies have focused on coupling s-wave superconductors to systems with an unusual configuration of electronic spin and momentum at the Fermi surface, where the nature of the paired state can be modified and the system may even undergo a topological phase transition. Here we present measurements and theoretical calculations of HgTe quantum wells coupled to aluminium or niobium superconductors and subject to a magnetic field in the plane of the quantum well. We find that this magnetic field tunes the momentum of Cooper pairs in the quantum well, directly reflecting the response of the spin-dependent Fermi surfaces. In the high electron density regime, the induced superconductivity evolves with electron density in agreement with our model based on the Hamiltonian of Bernevig, Hughes and Zhang. This agreement provides a quantitative value for g ˜/vF, where g ˜ is the effective g-factor and vF is the Fermi velocity. Our new understanding of the interplay between spin physics and superconductivity introduces a way to spatially engineer the order parameter from singlet to triplet pairing, and in general allows investigation of electronic spin texture at the Fermi surface of materials.

  14. A Si/SiGe quantum well based biosensor for direct analysis of exothermic biochemical reaction

    NASA Astrophysics Data System (ADS)

    Zhang, Lei; Dong, Tao

    2013-04-01

    A rapid and reliable detection system is needed in the area of label-free calorimetric measurement for monitoring biochemical reactions. In this paper, a thermal biosensor employing a Si/SiGe quantum well is proposed where the infrared radiation energy is carefully considered to increase the sensor's sensitivity. It applies a suspended functional film with a trench across the multilayers. A polydimethylsiloxane cover for the microfluidic channel is bonded with the sensor for the injection and removal of a small volume of solution (down to 500 nL). The resistance change of Si/SiGe quantum well material is read out through the wire bonding connection to the conductive pads of the sensor. A linear detection range from 0.5 to 150 mM and a relative standard deviation less than 1% are demonstrated in the enzymatic reaction test with urea solution. Characterizations on the quantum well film verifies a high temperature coefficient of resistance value and fine crystal lattice, which promises a notable sensitivity. The application of the wafer level transfer bonding process makes the sensor fabrication convenient and cost-effective.

  15. Negatively charged donors in parabolic quantum-well wires under magnetic fields

    NASA Astrophysics Data System (ADS)

    Zhai, Li-Xue; Liu, Jian-Jun

    2007-09-01

    The ground state of a negatively charged donor (D-) in a parabolic GaAs quantum-well wire in the presence of a magnetic field is investigated using the finite difference method within the quasi-one-dimensional effective potential model. The magnetic effects on the binding energies of the ground state of a D- center are calculated for various parabolic potentials. The distance between the electrons and the donor ion and the distance between the two electrons are also calculated, respectively, as a function of the strength of the parabolic potential and the magnetic field. We find that the interplay of the spatial confinement and the magnetic confinement of electrons in quantum-well wires leads to complicated behavior of the binding energies of the D- center and that the increase of the electron-donor ion attraction dominates the increase of the electron-electron repulsion as the spatial and magnetic confinement increases for the ground state of a D- center in a parabolic quantum-well wire.

  16. Growth and properties of Hg-based quantum well structures and superlattices

    NASA Technical Reports Server (NTRS)

    Schetzina, J. F.

    1990-01-01

    An overview of the properties of HgTe-CdTe quantum well structures and superlattices (SL) is presented. These new quantum structures are candidates for use as new long wavelength infrared (LWIR) and very long wavelength infrared (VLWIR) detectors, as well as for other optoelectronic applications. Much has been learned within the past two years about the physics of such structures. The valence band offset has been determined to be approx. 350 meV, independent of temperature. The occurrence of electron and hole mobilities in excess of 10(exp 5)cm(exp 2)/V center dot s is now understood on the basis of SL band structure calculations. The in-plane and out-of-plane electron and hole effective masses have been measured and interpreted theoretically for HgTe-CdTe superlattices. Controlled substitutional doping of superlattices has recently been achieved at North Carolina State University (NCSU), and modulation-doped SLs have now been successfully grown and studied. Most recently, a dramatic lowering of the growth temperature of Hg-based quantum well structure and SLs (to approx. 100 C) has been achieved by means of photoassisted molecular beam epitaxy (MBE) at NCSU. A number of new devices have been fabricated from these doped multilayers.

  17. Influence of metalorganic precursors flow interruption timing on green InGaN multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Dmukauskas, M.; Kadys, A.; Malinauskas, T.; Grinys, T.; Reklaitis, I.; Badokas, K.; Skapas, M.; Tomašiūnas, R.; Dobrovolskas, D.; Stanionytė, S.; Pietzonka, I.; Strassburg, M.; Lugauer, H.-J.

    2016-12-01

    The paper reports on fully strained green light emitting InGaN/GaN multiple quantum wells, grown by metalorganic vapor phase epitaxy, using metal precursor multiple flow interruptions during InGaN quantum well growth. Optimization of the interruption timing (pulse t 1  =  20 s, pause t 2  =  12 s) lets us reach the integrated photoluminescence enhancement for the growth at temperature 780 ºC. The enhancement, as a function of pause duration, appeared to be pulse duration dependent: a lower enhancement can be achieved using shorter pulses with optimized relatively shorter pauses. Indium evaporation during the interruption time was interpreted as the main issue to keep the layers intact. Quantum wells revealing the highest photoluminescence enhancement were inspected for interface quality, layer thickness, growth speed, strain, surface morphology and roughness by TEM, XRD and AFM techniques, and compared with the one grown in the conventional mode.

  18. Reversed oxygen sensing using colloidal quantum wells towards highly emissive photoresponsive varnishes

    PubMed Central

    Lorenzon, Monica; Christodoulou, Sotirios; Vaccaro, Gianfranco; Pedrini, Jacopo; Meinardi, Francesco; Moreels, Iwan; Brovelli, Sergio

    2015-01-01

    Colloidal quantum wells combine the advantages of size-tunable electronic properties with vast reactive surfaces that could allow one to realize highly emissive luminescent-sensing varnishes capable of detecting chemical agents through their reversible emission response, with great potential impact on life sciences, environmental monitoring, defence and aerospace engineering. Here we combine spectroelectrochemical measurements and spectroscopic studies in a controlled atmosphere to demonstrate the ‘reversed oxygen-sensing’ capability of CdSe colloidal quantum wells, that is, the exposure to oxygen reversibly increases their luminescence efficiency. Spectroelectrochemical experiments allow us to directly relate the sensing response to the occupancy of surface states. Magneto-optical measurements demonstrate that, under vacuum, heterostructured CdSe/CdS colloidal quantum wells stabilize in their negative trion state. The high starting emission efficiency provides a possible means to enhance the oxygen sensitivity by partially de-passivating the particle surfaces, thereby enhancing the density of unsaturated sites with a minimal cost in term of luminescence losses. PMID:25910499

  19. Scattering mechanisms in shallow undoped Si/SiGe quantum wells

    SciTech Connect

    Laroche, D.; Nielsen, E.; Lu, T. M.; Huang, S.-H.; Chuang, Y.; Li, J.-Y. Liu, C. W.

    2015-10-15

    We report the magneto-transport study and scattering mechanism analysis of a series of increasingly shallow Si/SiGe quantum wells with depth ranging from ∼ 100 nm to ∼ 10 nm away from the heterostructure surface. The peak mobility increases with depth, suggesting that charge centers near the oxide/semiconductor interface are the dominant scattering source. The power-law exponent of the electron mobility versus density curve, μ ∝ n{sup α}, is extracted as a function of the depth of the Si quantum well. At intermediate densities, the power-law dependence is characterized by α ∼ 2.3. At the highest achievable densities in the quantum wells buried at intermediate depth, an exponent α ∼ 5 is observed. We propose and show by simulations that this increase in the mobility dependence on the density can be explained by a non-equilibrium model where trapped electrons smooth out the potential landscape seen by the two-dimensional electron gas.

  20. Terahertz intersubband transition in GaN/AlGaN step quantum well

    NASA Astrophysics Data System (ADS)

    Wu, F.; Tian, W.; Yan, W. Y.; Zhang, J.; Sun, S. C.; Dai, J. N.; Fang, Y. Y.; Wu, Z. H.; Chen, C. Q.

    2013-04-01

    The influences of polarization and structure parameters on the intersubband transition frequency within terahertz (THz) range and oscillator strength in GaN/AlGaN step quantum well have been investigated by solving Schrödinger and Poisson equations self-consistently. The results show that the Al mole compositions of step quantum well and space barrier have a significant effect on the THz intersubband transition frequency. A specific phenomenon is found that the minimum energy spacing between the ground state and first excited state can be achieved as the Al mole composition of space barrier is about twice of that of step well. In particular, an intersubband transition with energy of 19.8 meV (4.83 THz) can be obtained with specifically designed parameters. This specific phenomenon still exists in a wide range of step well width and a narrow range of well width with less than 3% fluctuation of the Al mole composition of barrier. In addition, oscillator strength and dipole matrix element versus the widths of well and step well, the influences of doping location and concentration on the absorption coefficient, are also investigated in detail in this study. The results should be of benefit to the design of devices operating in the THz frequency range.

  1. Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice.

    PubMed

    Wang, Xiao; Wang, Wei; Wang, Jingli; Wu, Hao; Liu, Chang

    2017-03-14

    P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)5/(GaN)1 superlattice (SL) in Al0.83Ga0.17N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as MgGa δ doped AlGaN SLs. Mg acceptor activation energy was significantly reduced from 0.378 to 0.331 eV by using MgGa δ doping in SLs instead of traditional doping in alloys. This new process was confirmed to be able to realize high p-type doping in high Al-content AlGaN.

  2. Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice

    NASA Astrophysics Data System (ADS)

    Wang, Xiao; Wang, Wei; Wang, Jingli; Wu, Hao; Liu, Chang

    2017-03-01

    P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)5/(GaN)1 superlattice (SL) in Al0.83Ga0.17N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as MgGa δ doped AlGaN SLs. Mg acceptor activation energy was significantly reduced from 0.378 to 0.331 eV by using MgGa δ doping in SLs instead of traditional doping in alloys. This new process was confirmed to be able to realize high p-type doping in high Al-content AlGaN.

  3. Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice

    PubMed Central

    Wang, Xiao; Wang, Wei; Wang, Jingli; Wu, Hao; Liu, Chang

    2017-01-01

    P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)5/(GaN)1 superlattice (SL) in Al0.83Ga0.17N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as MgGa δ doped AlGaN SLs. Mg acceptor activation energy was significantly reduced from 0.378 to 0.331 eV by using MgGa δ doping in SLs instead of traditional doping in alloys. This new process was confirmed to be able to realize high p-type doping in high Al-content AlGaN. PMID:28290480

  4. Iii-V Compound Multiple Quantum Well Based Modulator and Switching Devices.

    NASA Astrophysics Data System (ADS)

    Hong, Songcheol

    A general formalism to study the absorption and photocurrent in multiple quantum well is provided with detailed consideration of quantum confined Stark shift, exciton binding energy, line broadening, tunneling, polarization, and strain effects. Results on variation of exciton size, binding energies and transition energies as a function electric field and well size have been presented. Inhomogeneous line broadening of exciton lines due to interface roughness, alloy disorder and well to well size fluctuation is calculated. The potential of material tailoring by introducing strain for specific optical response is discussed. Theoretical and experimental results on excitonic and band-to-band absorption spectra in strained multi-quantum well structures are shown. I also report on polarization dependent optical absorption for excitonic and interband transitions in lattice matched and strained multiquantum well structures in presence of transverse electric field. Photocurrent in a p-i(MQW)-n diode with monochromatic light is examined with respect to different temperatures and intensities. The negative resistance of I-V characteristic of the p-i-n diode is based on the quantum confined Stark effect of the heavy hole excitonic transition in a multiquantum well. This exciton based photocurrent characteristic allows efficient switching. A general purpose low power optical logic device using the controller-modulator concept bas been proposed and realized. The controller is a heterojunction phototransistor with multiquantum wells in the base-collector depletion region. This allows an amplified photocurrent controlled voltage feedback with low light intensity levels. Detailed analysis of the sensitivity of this device in various modes of operation is studied. Studies are also presented on the cascadability of the device as well as its integrating -thresholding properties. A multiquantum well heterojunction bipolar transistor (MHBT), which has N^+ -p^+-i(MQW)-N structure has been

  5. Deep UV AlGaN light emitting diodes grown by gas source molecular beam epitaxy on sapphire and AlGaN/sapphire substrates

    NASA Astrophysics Data System (ADS)

    Nikishin, S.; Borisov, B.; Kuryatkov, V.; Usikov, A.; Dmitriev, V.; Holtz, M.

    2006-02-01

    We report the electrical and optical properties of deep ultraviolet light emitting diodes (LEDs) based on digital alloy structures (DAS) of AlN/Al 0.08Ga 0.92N grown by gas source molecular beam epitaxy with ammonia on sapphire substrates and AlGaN/sapphire templates. AlGaN/sapphire templates were grown by recently developed stress controlled hydride vapor phase epitaxy (HVPE). For DAS with effective bandgap of 5.1 eV we obtain room temperature electron concentrations up to 1x10 19 cm -3 and hole concentrations of 1x10 18 cm -3. Based on these results we prepared double heterostructure (DHS) LEDs operating in the range of 250 to 290 nm. The emission wavelengths were controlled through the effective bandgap of the active region. The possible ways for increase of LED's efficiency are discussed. We observed significant improvement in the room temperature luminescence efficiency (by factor of 100) of AlGaN quantum wells when a transition growth mode is induced by reduced flux of ammonia. We found that active layer grown on HVPE AlGaN/sapphire substrates have higher luminescence efficiency (by factor of 3) than DAS grown on sapphire.

  6. Theoretical simulation of negative differential transconductance in lateral quantum well nMOS devices

    NASA Astrophysics Data System (ADS)

    Vyas, P. B.; Naquin, C.; Edwards, H.; Lee, M.; Vandenberghe, W. G.; Fischetti, M. V.

    2017-01-01

    We present a theoretical study of the negative differential transconductance (NDT) recently observed in the lateral-quantum-well Si n-channel field-effect transistors [J. Appl. Phys. 118, 124505 (2015)]. In these devices, p+ doping extensions are introduced at the source-channel and drain-channel junctions, thus creating two potential barriers that define the quantum well across whose quasi-bound states resonant/sequential tunneling may occur. Our study, based on the quantum transmitting boundary method, predicts the presence of a sharp NDT in devices with a nominal gate length of 10-to-20 nm at low temperatures ( ˜10 K). At higher temperatures, the NDT weakens and disappears altogether as a result of increasing thermionic emission over the p+ potential barriers. In larger devices (with a gate length of 30 nm or longer), the NDT cannot be observed because of the low transmission probability and small energetic spacing (smaller than kBT ) of the quasi-bound states in the quantum well. We speculate that the inability of the model to predict the NDT observed in 40 nm gate-length devices may be due to an insufficiently accurate knowledge of the actual doping profiles. On the other hand, our study shows that NDT suitable for novel logic applications may be obtained at room temperature in devices of the current or near-future generation (sub-10 nm node), provided an optimal design can be found that minimizes the thermionic emission (requiring high p+ potential-barriers) and punch-through (that meets the opposite requirement of potential-barriers low enough to favor the tunneling current).

  7. Coherent Pump-Probe Interactions and Terahertz Intersubband Gain in Semiconductor Quantum Wells

    NASA Technical Reports Server (NTRS)

    Liu, Ansheng; Ning, Cun-Zheng

    1999-01-01

    In recent years there has been considerable interest in intersubband-transition-based infrared semiconductor quantum well (QW) lasers because of their potential applications. In the mid-infrared range, both electrically-injected quantum cascade lasers [1] and optically-pumped multiple QW lasers [2] have been experimentally realized. In these studies, optical gain is due to population inversion between the lasing subbands. It was also proposed that stimulated Raman scattering in QW systems can produce net infrared optical gain [3j. In such a nonlinear optical scheme, the appearance of optical gain that may lead to intersubband Raman lasers does not rely on the population inversion. Since, in tile resonant Raman process (Raman gain is the largest in this case), the pump field induces population redistribution among subbands in the QW s ystem, it seems that a realistic estimate of the optical gain has to include this effect. Perturbative calculations used in the previous work [3] may overestimate the Raman gain. In this paper we present a nonperturbative calculation of terahertz gain of optically-pumped semiconductor step quantum wells. Limiting optical transitions within the conduction band of QW, we solve the pump-field-induced nonequilibrium distribution function for each subband of the QW system from a set of coupled rate equations. Both intrasubband and intersubband relaxation processes in the quantum well system are included. Taking into account the coherent interactions between pump and THz (signal) waves, we we derive the susceptibility of the QW system for the THz field. For a GaAs/AlGaAs step QW, we calculate the Thz gain spectrum for different pump frequencies and intensities. Under moderately strong pumping (approximately 0.3 MW/sq cm), a significant THz gain (approximately 300/m) is predicted. It is also shown that the coherent wave interactions (resonant stimulated Raman processes) contribute significantly to the THz gain.

  8. 3D Electron Spin Relaxation Control by Electric Field in Quantum Wells

    NASA Astrophysics Data System (ADS)

    Marie, Xavier

    2012-02-01

    We have measured the electron spin relaxation time in (111)-oriented GaAs quantum wells by time-resolved photoluminescence. By embedding the QWs in a PIN or NIP structure we demonstrate the tuning of the conduction band spin splitting and hence the spin relaxation time with an applied external electric field applied along the growth z direction . The application of an external electric field of 50 kV/cm yields a two-order of magnitude increase of the spin relaxation time which can reach values larger than 30 ns; this is a consequence of the electric field tuning of the spin-orbit conduction band splitting which can almost vanish when the Rashba term compensates exactly the Dresselhaus one [1]. The spin quantum beats measurements under transverse magnetic field prove that the D'Yakonov-Perel (DP) spin relaxation time is not only increased for the Sz electron spin component but also for both Sx and Sy. These results contrast drastically with the (001) and (110) quantum wells.The role of the cubic Dresselhaus terms on the spin relaxation anisotropy will finally be discussed. The tuning or suppression of the DP electron spin relaxation demonstrated here for GaAs/AlGaAs quantum wells grown on (111) substrates is also possible in many other III-V and II-VI zinc-blende nanostructures since the principle relies only on symmetry considerations. [4pt] [1] A. Balocchi, Q. H. Duong, P. Renucci, B. L. Liu, C. Fontaine, T. Amand, D. Lagarde, and X. Marie, Phys. Rev. Lett 107, 136604(2011)

  9. Capture and emission of electrons in quantum wells under applied electric field

    NASA Astrophysics Data System (ADS)

    Vinter, B.; Luc, F.; Bois, P.; Thibaudeau, L.; Rosencher, E.

    1994-06-01

    Important characteristics of Quantum Well Infrared Photodetectors are determined almost entirely by the photoionization rate of electrons out of the Quantum Well (QW) and the recapture into the QWs. To elucidate these processes microscopically we have made structures in which the QWs are isolated from one contact by a completely blocking barrier, so that the steady state current vanishes. The transient current induced by photoionization out of the QWs gives a direct measurement of the photoionization cross section and the escape probability of a photoexcited electron. We have found that the variation of the latter with the electric field may be described by a simple barrier lowering model combined with statistical fluctuation of the QW width. The capture process has been studied by impedance spectroscopy in samples containing only one well. The capture velocity thus measured is found to decrease with increasing applied electric field but within experimental uncertainties it does not depend on the width of the well for well widths between 3 and 7.5 nm. Theoretical results on optical phonon mediated transitions in the applied field from barrier to well states show a generally good agreement with experiment at low fields but less dependence on the field.

  10. Single-monolayer quantum wells of GaInAs in InP grown by metalorganic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Seifert, W.; Fornell, J.-O.; Ledebo, L.; Pistol, M.-E.; Samuelson, L.

    1990-03-01

    GaInAs/InP quantum wells differing in thickness between 1 and 20 monolayers (1 monolayer≊2.93 Å) have been grown by low-pressure (50 mbar) metalorganic vapor phase epitaxy and investigated by 2 K photoluminescence. To our knowledge this is the first observation of the one monolayer quantum well. Well-resolved photoluminescence peaks were observed and were attributed to recombination of excitons bound to quantum wells of defined monolayer thickness. The growth rate could be adjusted to produce a one monolayer quantum well. Its photoluminescence peak was observed at 1.245 eV, corresponding to a quantum confinement shift of 434 meV. The full width at half maximum of this peak was only 8 meV.

  11. InAsP-based quantum wells as infrared pressure gauges for use in a diamond anvil cell

    NASA Astrophysics Data System (ADS)

    Trushkin, S.; Kamińska, A.; Trzeciakowski, W.; Hopkinson, M.; Suchocki, A.

    2012-10-01

    The results of high-pressure, low-temperature luminescence measurements of three InAsP-based multiple quantum well structures are reported for application as pressure sensors for diamond anvil cells working in the near-infrared spectral range. The multiple quantum well structures exhibit a much higher pressure shift of the luminescence lines as compared with ruby, typically used as the pressure sensor for diamond anvil cell. However, the full width at half maximum of the quantum wells is much higher than that for ruby. This reduces the available sensitivity gain exhibited by the InAsP-based quantum wells, but the improvement is still 2-3 times higher than that of ruby. Three InAsP multiple quantum well samples were examined, which exhibited luminescence at various wavelengths. The wavelength shift of these samples could be calibrated using similar parameters.

  12. The enhanced photo absorption and carrier transportation of InGaN/GaN Quantum Wells for photodiode detector applications.

    PubMed

    Yang, Haojun; Ma, Ziguang; Jiang, Yang; Wu, Haiyan; Zuo, Peng; Zhao, Bin; Jia, Haiqiang; Chen, Hong

    2017-02-27

    We have conducted a series of measurements of resonantly excited photoluminescence, photocurrent and photovoltage on InGaN/GaN quantum wells with and without a p-n junction under reverse bias condition. The results indicate that most of the resonantly excited photo-generated carriers are extracted from the quantum wells when a p-n junction exists, and the photon absorption of quantum wells is enhanced by the p-n junction. Additionally, the carrier extraction becomes more distinct under a reverse bias. Our finding brings better understanding of the physical characteristics of quantum wells with p-n junction, which also suggests that the quantum well is suitable for photodiode detectors applications when a p-n junction is used.

  13. The enhanced photo absorption and carrier transportation of InGaN/GaN Quantum Wells for photodiode detector applications

    PubMed Central

    Yang, Haojun; Ma, Ziguang; Jiang, Yang; Wu, Haiyan; Zuo, Peng; Zhao, Bin; Jia, Haiqiang; Chen, Hong

    2017-01-01

    We have conducted a series of measurements of resonantly excited photoluminescence, photocurrent and photovoltage on InGaN/GaN quantum wells with and without a p-n junction under reverse bias condition. The results indicate that most of the resonantly excited photo-generated carriers are extracted from the quantum wells when a p-n junction exists, and the photon absorption of quantum wells is enhanced by the p-n junction. Additionally, the carrier extraction becomes more distinct under a reverse bias. Our finding brings better understanding of the physical characteristics of quantum wells with p-n junction, which also suggests that the quantum well is suitable for photodiode detectors applications when a p-n junction is used. PMID:28240254

  14. Generation of pure spin currents via Auger recombination in quantum wells with Rashba splitting

    SciTech Connect

    Afanasiev, A. N. Greshnov, A. A. Greshnov, A. A.

    2015-10-15

    We propose a nonoptical mechanism for generating spin current via Auger recombination in semiconductor quantum wells (QWs) with spin–orbit splitting associated with structural QW asymmetry. It is shown that Auger recombination in narrow-bandgap semiconductors makes it possible to produce spin currents that exceed those that are obtained in the case of intraband as well as interband optical excitation. Analysis shows that the interference term in the expression for the Auger-recombination rate is responsible for the generation of spin currents.

  15. Electron-electron correlations in square-well quantum dots: direct energy minimization approach.

    PubMed

    Goto, Hidekazu; Hirose, Kikuji

    2011-04-01

    Electron-electron correlations in two-dimensional square-well quantum dots are investigated using the direct energy minimization scheme. Searches for groundstate charges and spin configurations are performed with varying the sizes of dots and the number of electrons. For a two-electron system, a standout difference between the configurations with and without counting correlation energy is demonstrated. The emergence and melting of Wigner-molecule-like structures arising from the interplay between the kinetic energy and Coulombic interaction energy are described. Electron-electron correlation energies and addition energy spectra are calculated, and special electron numbers related to peculiar effects of the square well are extracted.

  16. Compositional dependence of the band gap in Ga(NAsP) quantum well heterostructures

    SciTech Connect

    Jandieri, K. Ludewig, P.; Wegele, T.; Beyer, A.; Kunert, B.; Springer, P.; Baranovskii, S. D.; Koch, S. W.; Volz, K.; Stolz, W.

    2015-08-14

    We present experimental and theoretical studies of the composition dependence of the direct band gap energy in Ga(NAsP)/GaP quantum well heterostructures grown on either (001) GaP- or Si-substrates. The theoretical description takes into account the band anti-crossing model for the conduction band as well as the modification of the valence subband structure due to the strain resulting from the pseudomorphic epitaxial growth on the respective substrate. The composition dependence of the direct band gap of Ga(NAsP) is obtained for a wide range of nitrogen and phosphorus contents relevant for laser applications on Si-substrate.

  17. Terahertz study of ultrafast carrier dynamics in InGaN/GaN multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Porte, H. P.; Turchinovich, D.; Cooke, D. G.; Jepsen, P. Uhd

    2009-11-01

    Ultrafast carrier dynamics in InGaN/GaN multiple quantum wells is measured by time-resolved terahertz spectroscopy. The built-in piezoelectric field is initially screened by photoexcited, polarized carriers, and is gradullay restored as the carriers recombine. We observe a nonexponential decay of the carrier density. Time-integrated photoluminescence spectra have shown a complete screening of the built-in piezoelectric field at high excitation fluences. We also observe that the terahertz conductivity spectra differs from simple Drude conductivity, describing the response of free carriers, and are well fitted by the Drude-Smith model.

  18. Electromagnetically induced transparency in an asymmetric double quantum well under non-resonant, intense laser fields

    NASA Astrophysics Data System (ADS)

    Niculescu, E. C.

    2017-02-01

    Electromagnetically induced transparency in an asymmetric double quantum well subjected to a non-resonant, intense laser field is theoretically investigated. We found that the energy levels configuration could be switched between a Λ-type and a ladder-type scheme by varying the non-resonant radiation intensity. This effect is due to the laser-induced electron tunneling between the wells and it allows a substantial flexibility in the manipulation of the optical properties. The dependence of the susceptibilities on the control field Rabi frequency, intensity of the nonresonant laser, and the control field detuning for both configurations are discussed and compared.

  19. Electron Energy Levels in a Quantum Well within an In-Plane Magnetic Field

    DTIC Science & Technology

    1989-06-01

    papers in theory [6-91 as well as in experiment[10-12] which study the effect of in-plane magnetic fields on two-dimensional systems. Recently Klama(8... Field by0) O H. R. Lee, H. G. Oh, Thomas F. George and C. I. Um N S Prepared for Publication O in S Journal of Applied Physics Departments of Chemistry...Arlington, Virginia 22217 11. TITLE (Include Security Classification) Electron Energy Levels in a Quantum Well Within an In-Plane Magnetic Field 12

  20. ZnO/(ZnMg)O single quantum wells with high Mg content graded barriers

    SciTech Connect

    Laumer, Bernhard; Schuster, Fabian; Wassner, Thomas A.; Stutzmann, Martin; Rohnke, Marcus; Schoermann, Joerg; Eickhoff, Martin

    2012-06-01

    ZnO/Zn{sub 1-x}Mg{sub x}O single quantum wells (SQWs) were grown by plasma-assisted molecular beam epitaxy on c-plane sapphire substrates. Compositional grading allows the application of optimized growth conditions for the fabrication of Zn{sub 1-x}Mg{sub x}O barriers with high crystalline quality and a maximum Mg content of x = 0.23. High resolution x-ray diffraction reveals partial relaxation of the graded barriers. Due to exciton localization, the SQW emission is found to consist of contributions from donor-bound and free excitons. While for narrow SQWs with well width d{sub W}{<=}2.5nm, the observed increase of the exciton binding energy is caused by quantum confinement, the drop of the photoluminescence emission below the ZnO bulk value found for wide SQWs is attributed to the quantum-confined Stark effect. For a Mg content of x = 0.23, a built-in electric field of 630 kV/cm is extracted, giving rise to a decrease of the exciton binding energy and rapid thermal quenching of the SQW emission characterized by an activation energy of (24 {+-} 4) meV for d{sub W} = 8.3 nm.

  1. Giant electro-optic effect in Ge/SiGe coupled quantum wells

    PubMed Central

    Frigerio, Jacopo; Vakarin, Vladyslav; Chaisakul, Papichaya; Ferretto, Marcello; Chrastina, Daniel; Le Roux, Xavier; Vivien, Laurent; Isella, Giovanni; Marris-Morini, Delphine

    2015-01-01

    Silicon-based photonics is now considered as the photonic platform for the next generation of on-chip communications. However, the development of compact and low power consumption optical modulators is still challenging. Here we report a giant electro-optic effect in Ge/SiGe coupled quantum wells. This promising effect is based on an anomalous quantum-confined Stark effect due to the separate confinement of electrons and holes in the Ge/SiGe coupled quantum wells. This phenomenon can be exploited to strongly enhance optical modulator performance with respect to the standard approaches developed so far in silicon photonics. We have measured a refractive index variation up to 2.3 × 10−3 under a bias voltage of 1.5 V, with an associated modulation efficiency VπLπ of 0.046 V cm. This demonstration paves the way for the development of efficient and high-speed phase modulators based on the Ge/SiGe material system. PMID:26477947

  2. Electron bilayers in an undoped Si/SiGe double-quantum-well heterostructure

    NASA Astrophysics Data System (ADS)

    Lu, Tzu-Ming; Laroche, Dominique; Huang, Shih-Hsien; Nielsen, Erik; Chuang, Yen; Li, Jiun-Yun; Liu, Cheewee

    We report the design, fabrication, and the magneto-transport study of an undoped Si/SiGe double quantum well heterostructure. We show that employing asymmetric quantum wells for our single-side-gated devices allows us to observe a cross-over from single-layer-like to bi-layer-llike behavior in the mobility-density dependence. We also observe an integer quantum Hall state at filling factor ν = 2, which is expected to arise from inter-layer effects for Si electrons. This state could be due to either inter-layer coherence, or the symmetric-antisymmetric tunneling gap. This work has been supported by the Division of Materials Sciences and Engineering, Office of Basic Energy Sciences, U.S. Department of Energy (DOE). Sandia National Laboratories is a multi program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. DOE's National Nuclear Security Administration under contract DE-AC04-94AL85000.

  3. Scattering mechanisms in shallow undoped Si/SiGe quantum wells

    DOE PAGES

    Laroche, Dominique; Huang, S. -H.; Nielsen, Erik; ...

    2015-10-07

    We report the magneto-transport study and scattering mechanism analysis of a series of increasingly shallow Si/SiGe quantum wells with depth ranging from ~ 100 nm to ~ 10 nm away from the heterostructure surface. The peak mobility increases with depth, suggesting that charge centers near the oxide/semiconductor interface are the dominant scattering source. The power-law exponent of the electron mobility versus density curve, μ ∝ nα, is extracted as a function of the depth of the Si quantum well. At intermediate densities, the power-law dependence is characterized by α ~ 2.3. At the highest achievable densities in the quantum wellsmore » buried at intermediate depth, an exponent α ~ 5 is observed. Lastly, we propose and show by simulations that this increase in the mobility dependence on the density can be explained by a non-equilibrium model where trapped electrons smooth out the potential landscape seen by the two-dimensional electron gas.« less

  4. Strong coupling and stimulated emission in single parabolic quantum well microcavity for terahertz cascade

    SciTech Connect

    Tzimis, A.; Savvidis, P. G.; Trifonov, A. V.; Ignatiev, I. V.; Christmann, G.; Tsintzos, S. I.; Hatzopoulos, Z.; Kavokin, A. V.

    2015-09-07

    We report observation of strong light-matter coupling in an AlGaAs microcavity (MC) with an embedded single parabolic quantum well. The parabolic potential is achieved by varying aluminum concentration along the growth direction providing equally spaced energy levels, as confirmed by Brewster angle reflectivity from a reference sample without MC. It acts as an active region of the structure which potentially allows cascaded emission of terahertz (THz) light. Spectrally and time resolved pump-probe spectroscopy reveals characteristic quantum beats whose frequencies range from 0.9 to 4.5 THz, corresponding to energy separation between relevant excitonic levels. The structure exhibits strong stimulated nonlinear emission with simultaneous transition to weak coupling regime. The present study highlights the potential of such devices for creating cascaded relaxation of bosons, which could be utilized for THz emission.

  5. Giant Spin-Orbit Splitting in Inverted InAs /GaSb Double Quantum Wells

    NASA Astrophysics Data System (ADS)

    Nichele, Fabrizio; Kjaergaard, Morten; Suominen, Henri J.; Skolasinski, Rafal; Wimmer, Michael; Nguyen, Binh-Minh; Kiselev, Andrey A.; Yi, Wei; Sokolich, Marko; Manfra, Michael J.; Qu, Fanming; Beukman, Arjan J. A.; Kouwenhoven, Leo P.; Marcus, Charles M.

    2017-01-01

    Transport measurements in inverted InAs /GaSb quantum wells reveal a giant spin-orbit splitting of the energy bands close to the hybridization gap. The splitting results from the interplay of electron-hole mixing and spin-orbit coupling, and can exceed the hybridization gap. We experimentally investigate the band splitting as a function of top gate voltage for both electronlike and holelike states. Unlike conventional, noninverted two-dimensional electron gases, the Fermi energy in InAs /GaSb can cross a single spin-resolved band, resulting in full spin-orbit polarization. In the fully polarized regime we observe exotic transport phenomena such as quantum Hall plateaus evolving in e2/h steps and a nontrivial Berry phase.

  6. Giant Spin-Orbit Splitting in Inverted InAs/GaSb Double Quantum Wells.

    PubMed

    Nichele, Fabrizio; Kjaergaard, Morten; Suominen, Henri J; Skolasinski, Rafal; Wimmer, Michael; Nguyen, Binh-Minh; Kiselev, Andrey A; Yi, Wei; Sokolich, Marko; Manfra, Michael J; Qu, Fanming; Beukman, Arjan J A; Kouwenhoven, Leo P; Marcus, Charles M

    2017-01-06

    Transport measurements in inverted InAs/GaSb quantum wells reveal a giant spin-orbit splitting of the energy bands close to the hybridization gap. The splitting results from the interplay of electron-hole mixing and spin-orbit coupling, and can exceed the hybridization gap. We experimentally investigate the band splitting as a function of top gate voltage for both electronlike and holelike states. Unlike conventional, noninverted two-dimensional electron gases, the Fermi energy in InAs/GaSb can cross a single spin-resolved band, resulting in full spin-orbit polarization. In the fully polarized regime we observe exotic transport phenomena such as quantum Hall plateaus evolving in e^{2}/h steps and a nontrivial Berry phase.

  7. Magnetic breakdown and Landau level spectra of a tunable double-quantum-well Fermi surface

    SciTech Connect

    Simmons, J.A.; Harff, N.E.; Lyo, S.K.; Klem, J.F.; Boebinger, G.S.; Pfeiffer, L.N.; West, K.W.

    1997-12-31

    By measuring longitudinal resistance, the authors map the Landau level spectra of double quantum wells as a function of both parallel (B{sub {parallel}}) and perpendicular (B{sub {perpendicular}}) magnetic fields. In this continuously tunable highly non-parabolic system, the cyclotron masses of the two Fermi surface orbits change in opposite directions with B{sub {parallel}}. This causes the two corresponding ladders of Landau levels formed at finite B{sub {perpendicular}} to exhibit multiple crossings. They also observe a third set of landau levels, independent of B{sub {parallel}}, which arise from magnetic breakdown of the Fermi surface. Both semiclassical and full quantum mechanical calculations show good agreement with the data.

  8. Demonstration of InGaN-based orange LEDs with hybrid multiple-quantum-wells structure

    NASA Astrophysics Data System (ADS)

    Iida, Daisuke; Niwa, Kazumasa; Kamiyama, Satoshi; Ohkawa, Kazuhiro

    2016-11-01

    We demonstrate the effectiveness of a hybrid multiple-quantum-wells (MQWs) structure in InGaN-based orange light-emitting diodes (LEDs) grown by metalorganic vapor phase epitaxy. The hybrid MQWs-LED is composed of orange InGaN double QWs and a blue-green InGaN single QW. Using the hybrid MQWs structure, the orange LEDs exhibited electroluminescence spectra with narrow full widths at half maximum of 51 nm at 20 mA. The light output power and external quantum efficiency of the InGaN-based orange LEDs were 0.23 mW and 0.6%, respectively, at 20 mA.

  9. 1.9 THz Quantum-cascade Lasers with One-well Injector

    NASA Technical Reports Server (NTRS)

    Kumar, Sushil; Williams, Benjamin S.; Hu, Qing; Reno, John L.

    2006-01-01

    We report terahertz quantum-cascade lasers operating predominantly at 1.90 THz with side modes as low as 1.86 THz (lambda approx. equal to 161 micrometers, planck's constant omega approx. equal to 7.7 meV). This is the longest wavelength to date of any solid-state laser that operates without assistance of a magnetic field. Carriers are injected into the upper radiative state by using a single quantum-well injector, which resulted in a significant reduction of free-carrier losses. The laser operated up to a heat-sink temperature of 110 K in pulsed mode, 95 K in continuous wave (cw) mode, and the threshold current density at 5 K was approx. 140 A per square centimeters.

  10. Polariton condensation in a strain-compensated planar microcavity with InGaAs quantum wells

    SciTech Connect

    Cilibrizzi, Pasquale; Askitopoulos, Alexis Silva, Matteo; Lagoudakis, Pavlos G.; Bastiman, Faebian; Clarke, Edmund; Zajac, Joanna M.; Langbein, Wolfgang

    2014-11-10

    The investigation of intrinsic interactions in polariton condensates is currently limited by the photonic disorder of semiconductor microcavity structures. Here, we use a strain compensated planar GaAs/AlAs{sub 0.98}P{sub 0.02} microcavity with embedded InGaAs quantum wells having a reduced cross-hatch disorder to overcome this issue. Using real and reciprocal space spectroscopic imaging under non-resonant optical excitation, we observe polariton condensation and a second threshold marking the onset of photon lasing, i.e., the transition from the strong to the weak-coupling regime. Condensation in a structure with suppressed photonic disorder is a necessary step towards the implementation of periodic lattices of interacting condensates, providing a platform for on chip quantum simulations.

  11. Growth and characterization of (110) InAs quantum well metamorphic heterostructures

    SciTech Connect

    Podpirka, Adrian A. Katz, Michael B.; Twigg, Mark E.; Mack, Shawn; Bennett, Brian R.; Shabani, Javad; Palmstrøm, Chris J.

    2015-06-28

    An understanding of the growth of (110) quantum wells (QWs) is of great importance to spin systems due to the observed long spin relaxation times. In this article, we report on the metamorphic growth and characterization of high mobility undoped InAs (110) QWs on GaAs (110) substrates. A low-temperature nucleation layer reduces dislocation density, results in tilting of the subsequent buffer layer and increases the electron mobility of the QW structure. The mobility varies widely and systematically (4000–16 000 cm{sup 2}/Vs at room temperature) with deposition temperature and layer thicknesses. Low-temperature transport measurements exhibit Shubnikov de-Haas oscillations and quantized plateaus in the quantum Hall regime.

  12. Engineering Efficiency Droop in InGaN/GaN Multiple Quantum Well LEDs

    NASA Astrophysics Data System (ADS)

    Puttaswamy, Yashvanth; Sundaresan, Sasi; Yalavarthi, Krishna; Ahmed, Shaikh

    2012-02-01

    In this work, we address the technologically important issue of efficiency droop pronounced in InGaN/GaN multiple quantum well (QW) LEDs. A two-fold modeling approach is employed where: 1) the NEMO 3-D tool is used to compute the atomistic strain fields and associated polarization potentials in the active region, and 2) the outputs from NEMO 3-D are then coupled to the Synopsys TCAD tool to determine the terminal electrical and optical properties of the device. Next, a series of numerical experiments are performed that mainly aims to improve the efficiency droop without compromising the internal quantum efficiency (IQE) of the device. These include:1) varying the QW thickness, 2) employing different configurations of tri-material barriers, 3) varying the molar concentration of the barrier materials, and 4) varying the doping density in the barrier region.

  13. Magneto-photoluminescence of InAs/InGaAs/InAlAs quantum well structures

    SciTech Connect

    Terent'ev, Ya. V.; Danilov, S. N.; Loher, J.; Schuh, D.; Bougeard, D.; Weiss, D.; Ganichev, S. D.; Durnev, M. V.; Tarasenko, S. A.; Mukhin, M. S.; Ivanov, S. V.

    2014-03-10

    Photoluminescence (PL) and highly circularly polarized magneto-PL (up to 50% at 6 T) from two-step bandgap InAs/InGaAs/InAlAs quantum wells (QWs) are studied. Bright PL is observed up to room temperature, indicating a high quantum efficiency of the radiative recombination in these QWs. The sign of the circular polarization indicates that it stems from the spin polarization of heavy holes caused by the Zeeman effect. Although in magnetic field the PL lines are strongly circularly polarized, no energy shift between the counter-polarized PL lines was observed. The results suggest the electron and the hole g-factor to be of the same sign and close magnitudes.

  14. Analysis of lateral mode behavior in broad-area InGaN quantum well lasers

    SciTech Connect

    CHOW,WENG W.; AMANO,H.

    2000-06-01

    A wave-optical model that is coupled to a microscopic gain theory is used to investigate lateral mode behavior in group III nitride quantum well lasers. Beam filamentation due to self-focusing in the gain medium is found to limit fundamental-mode output to narrow stripe lasers or to operation close to lasing threshold. Differences between nitride and conventional near-infrared semiconductor lasers arise because of band structure differences, in particular, the presence of a strong quantum-confined Stark effect in the former. Increasing mirror reflectivities in plane-plane resonators to reduce lasing threshold current tends to exacerbate the filamentation problem. On the other hand, a negative-branch unstable resonator is found to mitigate filament effects, enabling fundamental-mode operation far above threshold in broad-area lasers.

  15. Tunneling-induced giant Goos-Hänchen shift in quantum wells.

    PubMed

    Yang, Wen-Xing; Liu, Shaopeng; Zhu, Zhonghu; Ziauddin; Lee, Ray-Kuang

    2015-07-01

    Tunneling-induced quantum interference experienced by an incident probe in the asymmetric double AlGaAs/GaAs quantum well (QW) structure can be modulated by means of an external control light beam and the tunable coupling strengths of resonant tunneling. These phenomena can be exploited to devise a novel intracavity medium to control Goos-Hänchen (GH) shifts of a mid-infrared probe beam incident on a cavity. For a suitably designed QW structure, our results show that maximum negative shift of 2.62 mm and positive shift of 0.56 mm are achievable for GH shifts in the reflected and transmitted light.

  16. Internal quantum efficiency improvement of InGaN/GaN multiple quantum well green light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Zhou, Q.; Xu, M.; Wang, H.

    2016-01-01

    In recent years, GaN-based light-emitting diode (LED) has been widely used in various applications, such as RGB lighting system, full-colour display and visible-light communication. However, the internal quantum efficiency (IQE) of green LEDs is significantly lower than that of other visible spectrum LED. This phenomenon is called "green gap". This paper briefly describes the physical mechanism of the low IQE for InGaN/GaN multiple quantum well (MQW) green LED at first. The IQE of green LED is limited by the defects and the internal electric field in MQW. Subsequently, we discuss the recent progress in improving the IQE of green LED in detail. These strategies can be divided into two categories. Some of these methods were proposed to enhance crystal quality of InGaN/GaN MQW with high In composition and low density of defects by modifying the growth conditions. Other methods focused on increasing electron-hole wave function overlap by eliminating the polarization effect.

  17. III-V tri-gate quantum well MOSFET: Quantum ballistic simulation study for 10 nm technology and beyond

    NASA Astrophysics Data System (ADS)

    Datta, Kanak; Khosru, Quazi D. M.

    2016-04-01

    In this work, quantum ballistic simulation study of a III-V tri-gate MOSFET has been presented. At the same time, effects of device parameter variation on ballistic, subthreshold and short channel performance is observed and presented. The ballistic simulation result has also been used to observe the electrostatic performance and Capacitance-Voltage characteristics of the device. With constant urge to keep in pace with Moore's law as well as aggressive scaling and device operation reaching near ballistic limit, a full quantum transport study at 10 nm gate length is necessary. Our simulation reveals an increase in device drain current with increasing channel cross-section. However short channel performance and subthreshold performance get degraded with channel cross-section increment. Increasing device cross-section lowers threshold voltage of the device. The effect of gate oxide thickness on ballistic device performance is also observed. Increase in top gate oxide thickness affects device performance only upto a certain value. The thickness of the top gate oxide however shows no apparent effect on device threshold voltage. The ballistic simulation study has been further used to extract ballistic injection velocity of the carrier and ballistic carrier mobility in the channel. The effect of device dimension and gate oxide thickness on ballistic velocity and effective carrier mobility is also presented.

  18. Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions

    SciTech Connect

    Hammersley, S.; Dawson, P.; Kappers, M. J.; Massabuau, F. C.-P.; Sahonta, S.-L.; Oliver, R. A.; Humphreys, C. J.

    2015-09-28

    InGaN-based light emitting diodes and multiple quantum wells designed to emit in the green spectral region exhibit, in general, lower internal quantum efficiencies than their blue-emitting counter parts, a phenomenon referred to as the “green gap.” One of the main differences between green-emitting and blue-emitting samples is that the quantum well growth temperature is lower for structures designed to emit at longer wavelengths, in order to reduce the effects of In desorption. In this paper, we report on the impact of the quantum well growth temperature on the optical properties of InGaN/GaN multiple quantum wells designed to emit at 460 nm and 530 nm. It was found that for both sets of samples increasing the temperature at which the InGaN quantum well was grown, while maintaining the same indium composition, led to an increase in the internal quantum efficiency measured at 300 K. These increases in internal quantum efficiency are shown to be due reductions in the non-radiative recombination rate which we attribute to reductions in point defect incorporation.

  19. Photoelectronic studies of an asymmetric step quantum-well middle wavelength infrared detector

    NASA Astrophysics Data System (ADS)

    Wu, Wen-Gang; Chen, Zhibin

    2001-10-01

    Photoelectronic characteristics of the fabricated InxGa1-xAs/AlyGa1- yAs/AlzGa1-zAs asymmetric step quantum-well middle wavelength (3 to approximately 5 micrometers ) infrared detectors are studied. The components display photovoltaic-type photocurrent response as well as the bias- controlled modulation of the peak wavelength of the main response, which is ascribed to the Stark shifts of the intersubband transitions from the local ground states to the extended first excited states in the quantum wells, at the 3 to approximately 5.3 micrometers infrared atmospheric transmission window. The blackbody detectivity (Dbb*) of the detectors reaches to about 1.0 X 1010 cm(DOT)Hz1/2/W at 77 K under bias of +/- 7 V. By expanding the electron wave function in terms of normalized plane wave basis withn the framwork of the effective-mass envelope-function theory, the linear Stark effects of the intersubband tansitions between the ground and first excited states in the asymmetric step well are calculated. The obtained results agree well with the corresponding experimental measurements.

  20. Wavy growth onset in strain-balanced InGaAs multi-quantum wells

    NASA Astrophysics Data System (ADS)

    Nasi, L.; Ferrari, C.; Lanzi, A.; Lazzarini, L.; Balboni, R.; Clarke, G.; Mazzer, M.; Rohr, C.; Abbott, P.; Barnham, K. W. J.

    2005-01-01

    Different strain-balanced InGaAs/InGaAs multi-quantum wells (MQWs) were grown on (0 0 1) InP to be used as active layers of thermophotovoltaic devices. Transmission electron microscopy (TEM) and high-resolution X-ray diffraction (HRXRD) were performed to correlate the evolution of the layer interfaces from planar to wavy and the consequent nucleation of extended defects with the well and barrier compositions and thicknesses and the growth temperature. The existence of a critical elastic energy density for the wavy growth onset has been experimentally confirmed by changing both the well and barrier misfit and the multi-quantum well layer thickness. A decrease of the growth temperature shifts the critical energy to higher values. An empirical model to predict the maximum number of layers that can be grown without modulations as a function of the strain energy stored in the MQW period and the growth temperature is presented and successfully applied for the growth of high quality 40 repetitions MQWs with a well misfit of about 1.5%.

  1. Multi-Quantum Well Structures to Improve the Performance of Multijunction Solar Cells

    NASA Astrophysics Data System (ADS)

    Samberg, Joshua Paul

    Current, lattice matched triple junction solar cell efficiency is approximately 44% at a solar concentration of 942x. Higher efficiency for such cells can be realized with the development of a 1eV bandgap material lattice matched to Ge. One of the more promising materials for this application is that of the InGaAs/GaAsP multi-quantum well (MQW) structure. By inserting a stress/strain-balanced InGaAs/GaAsP MQW structure into the iregion of a GaAs p-i-n diode, the absorption edge of the p-i-n diode can be red shifted with respect to that of a standard GaAs p-n diode. Compressive stress in the InGaAs wells are balanced via GaAsP barriers subjected to tensile stress. Individually, the InGaAs and GaAsP layers are grown below their critical layer thickness to prevent the formation of misfit and threading dislocations. Until recently InGaAs/GaAsP MQWs have been somewhat hindered by their usage of low phosphorus-GaAsP barriers. Presented within is the development of a high-P composition GaAsP and the merits for using such a high composition of phosphorus are discussed. It is believed that these barriers represent the highest phosphorus content to date in such a structure. By using high composition GaAsP the carriers are collected via tunneling (for barriers .30A) as opposed to thermionic emission. Thus, by utilizing thin, high content GaAsP barriers one can increase the percentage of the intrinsic region in a p-i-n structure that is comprised of the InGaAs well in addition to increasing the number of periods that can be grown for a given depletion width. However, standard MQWs of this type inherently possess undesirable compressive strain and quantum size effects (QSE) that cause the optical absorption of the InGaAs wells to blue shift. To circumvent these deleterious QSEs stress balanced, pseudomorphic InGaAs/GaAsP staggered MQWs were developed. Tunneling is still a viable mode for carrier transport in the staggered MQW structures. GaAs interfacial layers within the multi-quantum

  2. Elimination of AlGaN epilayer cracking by spatially patterned AlN mask

    NASA Astrophysics Data System (ADS)

    Sarzyński, Marcin; Kryśko, Marcin; Targowski, Grzegorz; Czernecki, Robert; Sarzyńska, Agnieszka; Libura, Adam; Krupczyński, Wiktor; Perlin, Piotr; Leszczyński, Michał

    2006-03-01

    The inherent problem in III-nitride technology is the cracking of AlGaN layers that results from lattice mismatch between AlGaN and GaN. In case of thin substrates (30-90μm), such as, bulk GaN grown by the high-pressure/high-temperature method, the bowing of AlGaN /GaN strained structures becomes an additional problem. To eliminate cracking and bowing, AlGaN layers were grown on GaN substrates with an AlN mask patterned to form 3-15μm wide windows. In the 3μm window, the AlGaN layer was not cracked, although its thickness and Al composition exceeded critical values for growth on nonpatterned substrates. Dislocation density in the windows was of 5×106/cm2.

  3. Temperature scaling in the quantum-Hall-effect regime in a HgTe quantum well with an inverted energy spectrum

    SciTech Connect

    Arapov, Yu. G.; Gudina, S. V.; Neverov, V. N.; Podgornykh, S. M.; Popov, M. R. Harus, G. I.; Shelushinina, N. G.; Yakunin, M. V.; Mikhailov, N. N.; Dvoretsky, S. A.

    2015-12-15

    The longitudinal and Hall magnetoresistances of HgTe/HgCdTe heterostructures with an inverted energy spectrum (the HgTe quantum well width is d = 20.3 nm) are measured in the quantum-Hall-effect regime at T = 2–50 K in magnetic fields up to B = 9 T. Analysis of the temperature dependences of conductivity in the transition region between the first and second plateaus of the quantum Hall effect shows the feasibility of the scaling regime for a plateau–plateau quantum phase transition in 2D-structures on the basis of mercury telluride.

  4. Ag colloids and arrays for plasmonic non-radiative energy transfer from quantum dots to a quantum well.

    PubMed

    Murphy, Graham P; Gough, John J; Higgins, Luke J; Karanikolas, Vasilios D; Wilson, Keith M; Garcia Coindreau, Jorge A; Zubialevich, Vitaly Z; Parbrook, Peter J; Bradley, A Louise

    2017-03-17

    Non-radiative energy transfer (NRET) can be an efficient process of benefit to many applications including photovoltaics, sensors, light emitting diodes and photodetectors. Combining the remarkable optical properties of quantum dots (QDs) with the electrical properties of quantum wells (QWs) allows for the formation of hybrid devices which can utilize NRET as a means of transferring absorbed optical energy from the QDs to the QW. Here we report on plasmon-enhanced NRET from semiconductor nanocrystal QDs to a QW. Ag nanoparticles in the form of colloids and ordered arrays are used to demonstrate plasmon-mediated NRET from QDs to QWs with varying top barrier thicknesses. Plasmon-mediated energy transfer (ET) efficiencies of up to ∼25% are observed with the Ag colloids. The distance dependence of the plasmon-mediated ET is found to follow the same d (-4) dependence as the direct QD to QW ET. There is also evidence for an increase in the characteristic distance of the interaction, thus indicating that it follows a Förster-like model with the Ag nanoparticle-QD acting as an enhanced donor dipole. Ordered Ag nanoparticle arrays display plasmon-mediated ET efficiencies up to ∼21%. To explore the tunability of the array system, two arrays with different geometries are presented. It is demonstrated that changing the geometry of the array allows a transition from overall quenching of the acceptor QW emission to enhancement, as well as control of the competition between the QD donor quenching and ET rates.

  5. Toward 17µm pitch heterogeneously integrated Si/SiGe quantum well bolometer focal plane arrays

    NASA Astrophysics Data System (ADS)

    Ericsson, Per; Fischer, Andreas C.; Forsberg, Fredrik; Roxhed, Niclas; Samel, Björn; Savage, Susan; Stemme, Göran; Wissmar, Stanley; Öberg, Olof; Niklaus, Frank

    2011-06-01

    Most of today's commercial solutions for un-cooled IR imaging sensors are based on resistive bolometers using either Vanadium oxide (VOx) or amorphous Silicon (a-Si) as the thermistor material. Despite the long history for both concepts, market penetration outside high-end applications is still limited. By allowing actors in adjacent fields, such as those from the MEMS industry, to enter the market, this situation could change. This requires, however, that technologies fitting their tools and processes are developed. Heterogeneous integration of Si/SiGe quantum well bolometers on standard CMOS read out circuits is one approach that could easily be adopted by the MEMS industry. Due to its mono crystalline nature, the Si/SiGe thermistor material has excellent noise properties that result in a state-ofthe- art signal-to-noise ratio. The material is also stable at temperatures well above 450°C which offers great flexibility for both sensor integration and novel vacuum packaging concepts. We have previously reported on heterogeneous integration of Si/SiGe quantum well bolometers with pitches of 40μm x 40μm and 25μm x 25μm. The technology scales well to smaller pixel pitches and in this paper, we will report on our work on developing heterogeneous integration for Si/SiGe QW bolometers with a pixel pitch of 17μm x 17μm.

  6. Quantum chaos of a particle in a square well: competing length scales and dynamical localization.

    PubMed

    Sankaranarayanan, R; Lakshminarayan, A; Sheorey, V B

    2001-10-01

    The classical and quantum dynamics of a particle trapped in a one-dimensional infinite square well with a time-periodic pulsed field is investigated. This is a two-parameter non-KAM (Kolmogorov-Arnold-Moser) generalization of the kicked rotor, which can be seen as the standard map of particles subjected to both smooth and hard potentials. The virtue of the generalization lies in the introduction of an extra parameter R, which is the ratio of two length scales, namely, the well width and the field wavelength. If R is a noninteger the dynamics is discontinuous and non-KAM. We have explored the role of R in controlling the localization properties of the eigenstates. In particular, the connection between classical diffusion and localization is found to generalize reasonably well. In unbounded chaotic systems such as these, while the nearest neighbor spacing distribution of the eigenvalues is less sensitive to the nature of the classical dynamics, the distribution of participation ratios of the eigenstates proves to be a sensitive measure; in the chaotic regimes the latter is log-normal. We find that the tails of the well converged localized states are exponentially localized despite the discontinuous dynamics while the bulk part shows fluctuations that tend to be closer to random matrix theory predictions. Time evolving states show considerable R dependence, and tuning R to enhance classical diffusion can lead to significantly larger quantum diffusion for the same field strengths, an effect that is potentially observable in present day experiments.

  7. Transport properties of silicon complementary-metal-oxide semiconductor quantum well field-effect transistors

    NASA Astrophysics Data System (ADS)

    Naquin, Clint Alan

    Introducing explicit quantum transport into silicon (Si) transistors in a manner compatible with industrial fabrication has proven challenging, yet has the potential to transform the performance horizons of large scale integrated Si devices and circuits. Explicit quantum transport as evidenced by negative differential transconductances (NDTCs) has been observed in a set of quantum well (QW) n-channel metal-oxide-semiconductor (NMOS) transistors fabricated using industrial silicon complementary MOS processing. The QW potential was formed via lateral ion implantation doping on a commercial 45 nm technology node process line, and measurements of the transfer characteristics show NDTCs up to room temperature. Detailed gate length and temperature dependence characteristics of the NDTCs in these devices have been measured. Gate length dependence of NDTCs shows a correlation of the interface channel length with the number of NDTCs formed as well as with the gate voltage (VG) spacing between NDTCs. The VG spacing between multiple NDTCs suggests a quasi-parabolic QW potential profile. The temperature dependence is consistent with partial freeze-out of carrier concentration against a degenerately doped background. A folding amplifier frequency multiplier circuit using a single QW NMOS transistor to generate a folded current-voltage transfer function via a NDTC was demonstrated. Time domain data shows frequency doubling in the kHz range at room temperature, and Fourier analysis confirms that the output is dominated by the second harmonic of the input. De-embedding the circuit response characteristics from parasitic cable and contact impedances suggests that in the absence of parasitics the doubling bandwidth could be as high as 10 GHz in a monolithic integrated circuit, limited by the transresistance magnitude of the QW NMOS. This is the first example of a QW device fabricated by mainstream Si CMOS technology being used in a circuit application and establishes the feasibility

  8. Anomalous spin precession and spin Hall effect in semiconductor quantum wells

    NASA Astrophysics Data System (ADS)

    Bi, Xintao; He, Peiru; Hankiewicz, E. M.; Winkler, R.; Vignale, Giovanni; Culcer, Dimitrie

    2013-07-01

    Spin-orbit (SO) interactions give a spin-dependent correction r̂so to the position operator, referred to as the anomalous position operator. We study the contributions of r̂so to the spin Hall effect (SHE) in quasi-two-dimensional (2D) semiconductor quantum wells with strong band-structure SO interactions that cause spin precession. The skew scattering and side-jump scattering terms in the SHE vanish, but we identify two additional terms in the SHE, due to r̂so, which have not been considered in the literature so far. One term reflects the modification of spin precession due to the action of the external electric field (the field drives the current in the quantum well), which produces, via r̂so, an effective magnetic field perpendicular to the plane of the quantum well. The other term reflects a similar modification of spin precession due to the action of the electric field created by random impurities, and appears in a careful formulation of the Born approximation. We refer to these two effects collectively as anomalous spin precession and we note that they contribute to the SHE to the first order in the SO coupling constant even though they formally appear to be of second order. In electron systems with weak momentum scattering, the contribution of the anomalous spin precession due to the external electric field equals 1/2 the usual side-jump SHE, while the additional impurity-dependent contribution depends on the form of the band-structure SO coupling. For band-structure SO coupling linear in wave vector, the two anomalous spin precession contributions cancel. For band-structure SO coupling cubic in wave vector, however, they do not cancel, and the anomalous spin precession contribution to the SHE can be detected in a high-mobility 2D electron gas with strong SO coupling. In 2D hole systems, both anomalous spin precession contributions vanish identically.

  9. Tunable optical delay via carrier induced exciton dephasing in semiconductor quantum wells.

    PubMed

    Sarkar, Susanta; Guo, Yan; Wang, Hailin

    2006-04-03

    We report the experimental realization of a tunable optical delay by exploiting unique incoherent nonlinear optical processes in semiconductors. The tunable optical delay takes advantage of the strong Coulomb interactions between excitons and free carriers and uses optical injection of free carriers to broaden and bleach an exciton absorption resonance. Fractional delay exceeding 200% has been obtained for an 8 ps optical pulse propagating near the heavy-hole excitonic transition in a GaAs quantum well structure. Tunable optical delay based on optical injection of free carriers avoids strong absorption of the pump beam and is also robust against variations in the frequency of the pump beam.

  10. III-V Semiconductor Quantum Well Lasers and Related Optoelectronic Devices on Silicon

    DTIC Science & Technology

    1989-12-01

    02139 In these experiments impurity-induced layer disordering (IILD) utilizing chemical re- duction of Si0 2 by Al (from Alo.sGao.As) is employed to...disordering (IILD) of AlxGa IxAs-GaAs quantum well heterostructure (QWH) crystals that utilize SiO 2 and Si3N4 diffusion source layers. The SiO 2- or...diffusion is demonstrated to result in the study of IILD in Al. Ga, - As-GaAs and other heterosys - intermixing of Ino.5 (Al. Ga, - )0 P layers grown

  11. Circularly polarized lasing in chiral modulated semiconductor microcavity with GaAs quantum wells

    NASA Astrophysics Data System (ADS)

    Demenev, A. A.; Kulakovskii, V. D.; Schneider, C.; Brodbeck, S.; Kamp, M.; Höfling, S.; Lobanov, S. V.; Weiss, T.; Gippius, N. A.; Tikhodeev, S. G.

    2016-10-01

    We report close to circularly polarized lasing at ℏ ω = 1.473 and 1.522 eV from an AlAs/AlGaAs Bragg microcavity, with 12 GaAs quantum wells in the active region and chirally etched upper distributed Bragg refractor under optical pump at room temperature. The advantage of using the chiral photonic crystal with a large contrast of dielectric permittivities is its giant optical activity, allowing to fabricate a very thin half-wave plate, with a thickness of the order of the emitted light wavelength, and to realize the monolithic control of circular polarization.

  12. Magnetic Semiconductor Quantum Wells in High Fields to 60 Tesla: Photoluminescence Linewidth Annealing at Magnetization Steps

    SciTech Connect

    Awschalom, D.D.; Crooker, S.A.; Lyo, S.K.; Rickel, D.G.; Samarth, N.

    1999-05-24

    Magnetic semiconductors offer a unique possibility for strongly tuning the intrinsic alloy disorder potential with applied magnetic field. We report the direct observation of a series of step-like reductions in the magnetic alloy disorder potential in single ZnSe/Zn(Cd,Mn)Se quantum wells between O and 60 Tesla. This disorder, measured through the linewidth of low temperature photoluminescence spectra drops abruptly at -19, 36, and 53 Tesla, in concert with observed magnetization steps. Conventional models of alloy disorder (developed for nonmagnetic semiconductors) reproduce the general shape of the data, but markedly underestimate the size of the linewidth reduction.

  13. Optical spectroscopy of single beryllium acceptors in GaAs/AlGaAs quantum well

    NASA Astrophysics Data System (ADS)

    Petrov, P. V.; Kokurin, I. A.; Klimko, G. V.; Ivanov, S. V.; Ivánov, Yu. L.; Koenraad, P. M.; Silov, A. Yu.; Averkiev, N. S.

    2016-09-01

    We carry out microphotoluminescence measurements of an acceptor-bound exciton (A0X ) recombination in the applied magnetic field with a single impurity resolution. In order to describe the obtained spectra we develop a theoretical model taking into account a quantum well (QW) confinement, an electron-hole and hole-hole exchange interaction. By means of fitting the measured data with the model we are able to study the fine structure of individual acceptors inside the QW. The good agreement between our experiments and the model indicates that we observe single acceptors in a pure two-dimensional environment whose states are unstrained in the QW plain.

  14. AlxGa1-xAs Single-Quantum-Well Surface-Emitting Lasers

    NASA Technical Reports Server (NTRS)

    Kim, Jae H.

    1992-01-01

    Surface-emitting solid-state laser contains edge-emitting Al0.08Ga0.92As single-quantum-well (SQW) active layer sandwiched between graded-index-of-refraction separate-confinement-heterostructure (GRINSCH) layers of AlxGa1-xAs, includes etched 90 degree mirrors and 45 degree facets to direct edge-emitted beam perpendicular to top surface. Laser resembles those described in "Pseudomorphic-InxGa1-xAs Surface-Emitting Lasers" (NPO-18243). Suitable for incorporation into optoelectronic integrated circuits for photonic computing; e.g., optoelectronic neural networks.

  15. Fermi surface and quantum well states of V(110) films on W(110)

    NASA Astrophysics Data System (ADS)

    Krupin, Oleg; Rotenberg, Eli; Kevan, S. D.

    2007-09-01

    Using angle-resolved photoemission spectroscopy, we have measured the Fermi surface of V(110) films epitaxially grown on a W(110) substrate. We compare our results for thicker films to existing calculations and measurements for bulk vanadium and find generally very good agreement. For thinner films, we observe and analyse a diverse array of quantum well states that split and distort the Fermi surface segments. We have searched unsuccessfully for a thickness-induced topological transition associated with contact between the zone-centre jungle gym and zone-boundary hole ellipsoid Fermi surface segments. We also find no evidence for ferromagnetic splitting of any bands on this surface.

  16. Progress in single quantum well structures for high power laser device applications

    NASA Astrophysics Data System (ADS)

    Waters, R. G.; Tihanyi, P. L.; Hill, D. S.; Soltz, B. A.

    1988-01-01

    Recent advances made toward performance optimization of (Al)GaAs quantum well lasers are described. Topics covered include: laser reliability for broad-area devices emitting less than 300 mW and its relation to the epitaxial structure and operating current density; parametric crystal growth studies and the implications for device efficiency; realization of 57 percent cw power conversion efficiency in an oxide-defined device; progress in dry-etching technology including array fabrication and development of device-quality laser facets suitable for integration. Finally, work in the high-power regime is discussed. This includes broad-area, single-emitter lasers emitting 6W cw.

  17. Controllable optical bistability and multistability in asymmetric double quantum wells via spontaneously generated coherence

    SciTech Connect

    Chen, Yuan; Deng, Li; Chen, Aixi

    2015-02-15

    We investigate the nonlinear optical phenomena of the optical bistability and multistability via spontaneously generated coherence in an asymmetric double quantum well structure coupled by a weak probe field and a controlling field. It is shown that the threshold and hysteresis cycle of the optical bistability can be conveniently controlled only by adjusting the intensity of the SGC or the controlling field. Moreover, switching between optical bistability and multistability can be achieved. These studies may have practical significance for the preparation of optical bistable switching device.

  18. Quantum-well intermixing for optoelectronic integration using high energy ion implantation

    NASA Astrophysics Data System (ADS)

    Charbonneau, S.; Poole, P. J.; Piva, P. G.; Aers, G. C.; Koteles, E. S.; Fallahi, M.; He, J.-J.; McCaffrey, J. P.; Buchanan, M.; Dion, M.; Goldberg, R. D.; Mitchell, I. V.

    1995-09-01

    The technique of ion-induced quantum-well (QW) intermixing using broad area, high energy (2-8 MeV As4+) ion implantation has been studied in a graded-index separate confinement heterostructure InGaAs/GaAs QW laser. This approach offers the prospect of a powerful and relatively simple fabrication technique for integrating optoelectronic devices. Parameters controlling the ion-induced QW intermixing, such as ion doses, fluxes, and energies, post-implantation annealing time, and temperature are investigated and optimized using optical characterization techniques such as photoluminescence, photoluminescence excitation, and absorption spectroscopy.

  19. Phosphor-free white light-emitting diode with laterally distributed multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Park, Il-Kyu; Kim, Ja-Yeon; Kwon, Min-Ki; Cho, Chu-Young; Lim, Jae-Hong; Park, Seong-Ju

    2008-03-01

    A phosphor-free white light-emitting diode (LED) was fabricated with laterally distributed blue and green InGaN /GaN multiple quantum wells (MQWs) grown by a selective area growth method. Photoluminescence and electroluminescence (EL) spectra of the LED showed emission peaks corresponding to the individual blue and green MQWs. The integrated EL intensity ratio of green to blue emission varied from 2.5 to 6.5 with the injection current below 300mA, but remained constant at high injection currents above 300mA. The stability of the emission color at high currents is attributed to parallel carrier injection into both MQWs.

  20. Silicon-Germanium multi-quantum well photodetectors in the near infrared.

    PubMed

    Onaran, Efe; Onbasli, M Cengiz; Yesilyurt, Alper; Yu, Hyun Yong; Nayfeh, Ammar M; Okyay, Ali K

    2012-03-26

    Single crystal Silicon-Germanium multi-quantum well layers were epitaxially grown on silicon substrates. Very high quality films were achieved with high level of control utilizing recently developed MHAH epitaxial technique. MHAH growth technique facilitates the monolithic integration of photonic functionality such as modulators and photodetectors with low-cost silicon VLSI technology. Mesa structured p-i-n photodetectors were fabricated with low reverse leakage currents of ~10 mA/cm² and responsivity values exceeding 0.1 A/W. Moreover, the spectral responsivity of fabricated detectors can be tuned by applied voltage.

  1. Resonant intersubband plasmon induced current in InGaAs quantum wells on GaAs

    SciTech Connect

    Holzbauer, Martin Klang, Pavel; Detz, Hermann; Maxwell Andrews, Aaron; Strasser, Gottfried; Gornik, Erich; Bakshi, Pradip

    2014-03-24

    We present measurements of the current enhancement due to the coupling of two intersubband plasmons in In{sub 0.05}Ga{sub 0.95}As quantum wells. With changing bias, an emissive and an absorptive intersubband plasmon mode cross attractively and trapped electrons in the ground state gain enough energy from the plasma wave to be lifted up to the second subband, where they can contribute to the current. This effect can be directly observed as an increase of 33% in the current. A magnetic field applied parallel to the growth direction allows a control of the strength of the intersubband plasmon coupling up to a quenching.

  2. Suppression of bulk conductivity in InAs/GaSb broken gap composite quantum wells

    SciTech Connect

    Charpentier, Christophe; Fält, Stefan; Reichl, Christian; Nichele, Fabrizio; Nath Pal, Atindra; Pietsch, Patrick; Ihn, Thomas; Ensslin, Klaus; Wegscheider, Werner

    2013-09-09

    The two-dimensional topological insulator state in InAs/GaSb quantum wells manifests itself by topologically protected helical edge channel transport relying on an insulating bulk. This work investigates a way of suppressing bulk conductivity by using gallium source materials of different degrees of impurity concentrations. While highest-purity gallium is accompanied by clear conduction through the sample bulk, intentional impurity incorporation leads to a bulk resistance over 1 MΩ, independent of applied magnetic fields. In addition, ultra high electron mobilities for GaAs/AlGaAs structures fabricated in a molecular beam epitaxy system used for the growth of Sb-based samples are reported.

  3. Voltage-controlled sub-terahertz radiation transmission through GaN quantum well structure

    NASA Astrophysics Data System (ADS)

    Laurent, T.; Sharma, R.; Torres, J.; Nouvel, P.; Blin, S.; Varani, L.; Cordier, Y.; Chmielowska, M.; Chenot, S.; Faurie, J.-P.; Beaumont, B.; Shiktorov, P.; Starikov, E.; Gruzinskis, V.; Korotyeyev, V. V.; Kochelap, V. A.

    2011-08-01

    We report on measurements of radiation transmission in the 0.220-0.325 THz frequency range through GaN quantum wells grown on sapphire substrates at nitrogen and room temperatures. Significant enhancement of the transmitted beam intensity with applied voltage is found at nitrogen temperature. This effect is explained by changes in the mobility of two-dimensional electrons under electric bias. We have clarified which physical mechanism modifies the electron mobility and we suggest that the effect of voltage-controlled sub-terahertz transmission can be used for the development of electro-optic modulators operating in the sub-THz frequency range.

  4. Quantum signatures of non-Newtonian orbits in the asymmetric infinite square well.

    PubMed

    Timberlake, Todd K; Nelson, Molly M

    2009-03-01

    An infinite square well with a rectangular step is one of the simplest systems to exhibit non-Newtonian ray-splitting periodic orbits in the classical limit. We examine eigenvalue spacings in the quantum version of this system. The sequence of spacings shows deviations from uniformity at energies just above the step height and distinct resonance features are visible at certain energies. Semiclassical analysis shows that these features are directly related to the presence of non-Newtonian orbits in the classical system. In addition, the resonance features are shown to produce revivals in suitably constructed wave packets peaked at the resonance energy.

  5. First-principles theory of quantum well resonance in double barrier magnetic tunnel junctions.

    PubMed

    Wang, Yan; Lu, Zhong-Yi; Zhang, X-G; Han, X F

    2006-08-25

    Quantum well (QW) resonances in Fe(001)/MgO/Fe/MgO/Fe double barrier magnetic tunnel junctions are calculated from first principles. By including the Coulomb blockade energy due to the finite size islands of the middle Fe film, we confirm that the oscillatory differential resistance observed in a recent experiment [T. Nozaki, Phys. Rev. Lett. 96, 027208 (2006)10.1103/PhysRevLett.96.027208] originates from the QW resonances from the Delta1 band of the Fe majority-spin channel. The primary source of smearing at low temperatures is shown to be the variation of the Coulomb blockade energy.

  6. Large and tunable negative refractive index via electromagnetically induced chirality in a semiconductor quantum well nanostructure

    NASA Astrophysics Data System (ADS)

    Zhao, Sh.-C.; Zhang, Sh.-Y.; Xu, Y.-Y.

    2014-11-01

    Large and tunable negative refractive index (NRI) via electromagnetically induced chirality is demonstrated in a semiconductor quantum wells (SQWs) nanostructure by using the reported experimental parameters in J.F. Dynes et al., Phys. Rev. Lett. 94, 157403 (2005). It is found: the large and controllable NRI with alterable frequency regions is obtained when the coupling laser field and the relative phase are modulated, which will increase the flexibility and possibility of implementing NRI in the SQWs nanostructure. The scheme rooted in the experimental results may lead a new avenue to NRI material in solid-state nanostructure.

  7. Lateral carrier confinement in InGaN quantum-well nanorods

    SciTech Connect

    Shi, Chentian; Zhang, Chunfeng; Wang, Xiaoyong; Xiao, Min

    2015-07-15

    We review our studies on lateral carrier diffusion in micro-fabricated samples of InGaN nanorods and their parent quantum wells. The carrier diffusion is observed to be strongly confined in nanorods, as manifested by the reduction in the delayed-rise component of time-resolved photoluminescence traces. We further argue that the confinement of carrier diffusion can be applied to suppress the efficiency droop related to defect state recombination and to assist in the energy transfer between InGaN nanorods and nanocrystal phosphors for color conversion.

  8. The second harmonic generation in symmetrical and asymmetrical Gaussian potential quantum wells with applied electric field

    NASA Astrophysics Data System (ADS)

    Yuan, Jian-Hui; Chen, Ni; Mo, Hua; Zhang, Yan; Zhang, Zhi-Hai

    2015-12-01

    A detailed investigation of the second harmonic generation in symmetrical and asymmetrical Gaussian potential quantum wells under the influence of applied electric field by using the compact-density-matrix approach and the finite difference method. The results show that the second-harmonic generation susceptibility obtained in two cases can reach the magnitude of 10-4 m/V, which depend dramatically on the applied electric field and the structural parameters. Finally, the resonant peak and its corresponding to the resonant energy are also taken into account.

  9. Electromagnetically induced transparency in a cascade-type quantum well subband system under intense picosecond excitation

    NASA Astrophysics Data System (ADS)

    Hanna, S.; Eichenberg, B.; Firsov, D. A.; Vorobjev, L. E.; Ustinov, V. M.; Seilmeier, A.

    2016-01-01

    The coherent light-matter interaction in a 4-level cascade-type subband system of an asymmetric GaAs/AlGaAs quantum well structure is studied in pump-probe transmission experiments with picosecond (ps) time resolution. Coupling two excited subbands by an intense mid-infrared laser pulse at low sample temperatures is found to result in a substantially increased transparency of the fundamental e1-e2 transition. We find a reduction of the absorption coefficient by ~80%, which is one of the most pronounced electromagnetically induced transparency in solid state systems observed so far.

  10. Reduced threshold all-optical bistability in etched quantum well microresonators

    NASA Astrophysics Data System (ADS)

    Rivera, T.; Ladan, F. R.; Izrael, A.; Azoulay, R.; Kuszelewicz, R.; Oudar, J. L.

    1994-02-01

    Etched vertical microresonators made of GaAs/AlGaAs multiple quantum wells produced by reactive ion etching was investigated to study the optical bistability phenomena. Reactive ion etching was preferred because of smooth vertical and minimization of density of surface recombination centers. A high cavity finesse was observed in the microresonators producing an optical bistability with wide hysteresis loops. A low threshold power of 70 microwatts was measured due to carrier confinement and vertical walls. The low bistability threshold power was attributed to self passivation happening during etching process, which produced a small surface recombination rate.

  11. Magnetic Field Induced Circular Photogalvanic Effect in InAs Quantum Wells

    DTIC Science & Technology

    2001-06-01

    St Petersburg, Russia We report on the first observation of a magnetic field induced circular photogalvanic effect ( CPGE ) in quantum wells (QWs). The...the magnetic field. For the sake of brevity we refer to the effect under consideration as to the magneto- CPGE . For bulk materials this effect was...theoretically treated in [2, 3] and observed in p-GaAs [4]. Phenomenologically, the magneto- CPGE is described by a third-rank tensor as J, = itaiýyBj•i (E x

  12. Limitation of electron mobility from hyperfine interaction in ultraclean quantum wells and topological insulators

    NASA Astrophysics Data System (ADS)

    Tarasenko, S. A.; Burkard, Guido

    2016-07-01

    The study of electron transport and scattering processes limiting electron mobility in high-quality semiconductor structures is central to solid-state electronics. Here, we uncover an unavoidable source of electron scattering which is caused by fluctuations of nuclear spins. We calculate the momentum relaxation time of electrons in quantum wells governed by the hyperfine interaction between electrons and nuclei and show that this time depends greatly on the spatial correlation of nuclear spins. Moreover, the scattering processes accompanied by a spin flip are a source of the backscattering of Dirac fermions at conducting surfaces of topological insulators.

  13. Photoluminescence and magnetophotoluminescence studies in GaInNAs/GaAs quantum wells

    NASA Astrophysics Data System (ADS)

    Segura, J.; Garro, N.; Cantarero, A.; Miguel-Sánchez, J.; Guzmán, A.; Hierro, A.

    2007-04-01

    We investigate the effects of electron and hole localization in the emission of a GaInNAs/GaAs single quantum well at low temperatures. Photoluminescence measurements varying the excitation density and under magnetic fields up to 14 T have been carried out. The results indicate that electrons are strongly localized in these systems due to small fluctuations in the nitrogen content of the quaternary alloy. The low linear diamagnetic shift of the emission points out the weakness of the Coulomb correlation between electrons and holes and suggests an additional partial localization of the holes.

  14. Rabi splitting in a quantum well system with Rashba spin-orbital coupling

    NASA Astrophysics Data System (ADS)

    Ma, Wenjie; Wang, Zhihai; Zhu, Hongbo

    2017-01-01

    We study the Rabi splitting phenomenon in a quantum well system with Rashba spin-orbital coupling where the spin degree of freedom is driven weakly by an external field. The dynamics of the system can be described by the Jaynes-Cummings model. As we increase the strength of spin-orbital coupling, the system undergoes an energy-level crossing which does not occure in the traditional cavity and circuit QED setups. We find that the intuitive rotating wave approximation in the driving Hamiltonian is ineffective when the energy-level crossing occurs. We also give a physical understanding based on the dressed-state representation.

  15. Nonlinear optical rectification in laterally-coupled quantum well wires with applied electric field

    NASA Astrophysics Data System (ADS)

    Liu, Guanghui; Guo, Kangxian; Zhang, Zhongmin; Hassanbadi, Hassan; Lu, Liangliang

    2017-03-01

    Nonlinear optical rectification coefficient χ0(2) in laterally-coupled AlxGa1-xAs/GaAs quantum well wires with an applied electric field is theoretically investigated using the effective mass approximation as well as the numerical energy levels and wavefunctions of electrons. We find that χ0(2) is greatly influenced by the electric field as well as both the distance and the radius of the coupled system. A blue shift of χ0(2) with increasing electric field is exhibited while a red shift followed by a blue shift with increasing distance or radius is exhibited. A nonmonotonic behavior can be found in the resonant peak values of χ0(2) along with the increase of the electric field, the distance or the radius. One or two of the following physical mechanisms: the increased localization of the ground and first-excited states, the reduced coupling and the reduced quantum confinement effect are applied to elucidate the results above. Our results play a potential role in infrared photodetectors based on the coupled system.

  16. High Efficiency Quantum Well Waveguide Solar Cells and Methods for Constructing the Same

    NASA Technical Reports Server (NTRS)

    Welser, Roger E. (Inventor); Sood, Ashok K. (Inventor)

    2014-01-01

    Photon absorption, and thus current generation, is hindered in conventional thin-film solar cell designs, including quantum well structures, by the limited path length of incident light passing vertically through the device. Optical scattering into lateral waveguide structures provides a physical mechanism to increase photocurrent generation through in-plane light trapping. However, the insertion of wells of high refractive index material with lower energy gap into the device structure often results in lower voltage operation, and hence lower photovoltaic power conversion efficiency. The voltage output of an InGaAs quantum well waveguide photovoltaic device can be increased by employing a III-V material structure with an extended wide band gap emitter heterojunction. Analysis of the light IV characteristics reveals that non-radiative recombination components of the underlying dark diode current have been reduced, exposing the limiting radiative recombination component and providing a pathway for realizing solar-electric conversion efficiency of 30% or more in single junction cells.

  17. Bound states for multiple Dirac-δ wells in space-fractional quantum mechanics

    SciTech Connect

    Tare, Jeffrey D. Esguerra, Jose Perico H.

    2014-01-15

    Using the momentum-space approach, we obtain bound states for multiple Dirac-δ wells in the framework of space-fractional quantum mechanics. Introducing first an attractive Dirac-comb potential, i.e., Dirac comb with strength −g (g > 0), in the space-fractional Schrödinger equation we show that the problem of obtaining eigenenergies of a system with N Dirac-δ wells can be reduced to a problem of obtaining the eigenvalues of an N × N matrix. As an illustration we use the present matrix formulation to derive expressions satisfied by the bound-state energies of N = 1, 2, 3 delta wells. We also obtain the corresponding wave functions and express them in terms of Fox's H-function.

  18. Many-Body Effect in Spin Dephasing in n-Type GaAs Quantum Wells

    NASA Astrophysics Data System (ADS)

    Weng, Ming-Qi; Wu, Ming-Wei

    2005-03-01

    By constructing and numerically solving the kinetic Bloch equations we perform a many-body study of the spin dephasing due to the D'yakonov-Perel' effect in n-type GaAs (100) quantum wells for high temperatures. In our study, we include the spin-conserving scattering such as the electron-phonon, the electron-nonmagnetic impurity as well as the electron-electron Coulomb scattering into consideration. The dephasing obtained from our theory contains both the single-particle and the many-body contributions with the latter originating from the inhomogeneous broadening introduced by the DP term [J. Supercond.: Incorp. Novel Magn. 14 (2001) 245 Eur. Phys. J. B 18 (2000) 373]. Our result agrees very well with the experimental data [Phys. Rev. B 62 (2000) 13034] of Malinowski et al. We further show that in the case we study, the spin dephasing is dominated by the many-body effect.

  19. Oxidation effects on cleaved multiple quantum well surfaces in air observed by scanning probe microscopy

    NASA Astrophysics Data System (ADS)

    Howells, S.; Gallagher, M. J.; Chen, T.; Pax, P.; Sarid, D.

    1992-08-01

    The paper presents the first atomic force microscopy (AFM) images of cleaved InGaAs/InP multiple quantum wells and compares them with scanning tunneling microscopy (STM) images taken of the same heterostructure. The images were stable in air for over a day. Based on these results, it is proposed that the mechanism for contrast in the images is due to an oxide layer that grows primarily on the InGaAs wells and not on the InP barriers. Both STM and AFM clearly resolve the individual wells of the heterostructure, although STM measured a larger corrugation than an AFM. STM also exhibited superior lateral resolution of about 2 nm, while AFM had a lateral resolution of approximately 6 nm.

  20. Tunability of InGaN/GaN quantum well light emitting diodes through current

    NASA Astrophysics Data System (ADS)

    Biswas, Dipankar; Panda, Siddhartha

    2013-07-01

    In the recent years, InGaN/GaN quantum well (QW) light emitting diodes (LEDs) have gathered much importance through the introduction of white LEDs and dual wavelength LEDs. However, the continuous tunability of InGaN/GaN QW LEDs has not been well addressed or discussed. In this paper, we introduce the tunability of an InGaN/GaN QW LED having a well width of 4 nm and In mole fraction of 0.3. The results, obtained from self-consistent solutions of the Schrödinger and Poisson equations, show that the transition energy of the LED may be continuously tuned by the device current. A prominent nonlinearity of the transition energy with the device current is generated, which should be of interest to the research workers in the field of optoelectronics.