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Sample records for aligned zno nanowires

  1. Permanent bending and alignment of ZnO nanowires.

    PubMed

    Borschel, Christian; Spindler, Susann; Lerose, Damiana; Bochmann, Arne; Christiansen, Silke H; Nietzsche, Sandor; Oertel, Michael; Ronning, Carsten

    2011-05-01

    Ion beams can be used to permanently bend and re-align nanowires after growth. We have irradiated ZnO nanowires with energetic ions, achieving bending and alignment in different directions. Not only the bending of single nanowires is studied in detail, but also the simultaneous alignment of large ensembles of ZnO nanowires. Computer simulations reveal how the bending is initiated by ion beam induced damage. Detailed structural characterization identifies dislocations to relax stresses and make the bending and alignment permanent, even surviving annealing procedures.

  2. Wafer-scale high-throughput ordered growth of vertically aligned ZnO nanowire arrays.

    PubMed

    Wei, Yaguang; Wu, Wenzhuo; Guo, Rui; Yuan, Dajun; Das, Suman; Wang, Zhong Lin

    2010-09-01

    This article presents an effective approach for patterned growth of vertically aligned ZnO nanowire (NW) arrays with high throughput and low cost at wafer scale without using cleanroom technology. Periodic hole patterns are generated using laser interference lithography on substrates coated with the photoresist SU-8. ZnO NWs are selectively grown through the holes via a low-temperature hydrothermal method without using a catalyst and with a superior control over orientation, location/density, and as-synthesized morphology. The development of textured ZnO seed layers for replacing single crystalline GaN and ZnO substrates extends the large-scale fabrication of vertically aligned ZnO NW arrays on substrates of other materials, such as polymers, Si, and glass. This combined approach demonstrates a novel method of manufacturing large-scale patterned one-dimensional nanostructures on various substrates for applications in energy harvesting, sensing, optoelectronics, and electronic devices.

  3. Fundamental understanding of the growth, doping and characterization of aligned ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Shen, Gang

    Zinc oxide (ZnO) is a II-VI semiconductor whose wide direct bandgap (3.37 eV) and large exciton binding energy (60 meV) make it compelling for optoelectronic devices such as light emitting diodes, lasers, photodetectors, solar cells, and mechanical energy harvesting devices. One dimensional structures of ZnO (nanowires) have become significant due to their unique physical properties arising from quantum confinement, and they are ideal for studying transport mechanisms in one-dimensional systems. In this doctoral research work, ZnO nanowire (NW) arrays were synthesized on sapphire substrates through carbo-thermal reduction of ZnO powders, and the effects of growth parameters on the properties of ZnO NW arrays were studied by scanning and transmission electron microscopy, X-ray diffraction, photoluminescence and Raman spectroscopy. Based on the phonon mode selection rules in wurtzite ZnO, confocal Raman spectroscopy was used to assess the alignment of ZnO NWs in an array, thereby complementing X-ray diffraction. Al doped ZnO NW arrays were achieved by mixing Al powder into the ZnO and graphite source mixture, and the presence of Al was confirmed by Energy-dispersive X-ray spectroscopy. The incorporation of Al had the effects of lowering the electrical resistivity, slightly deteriorating crystal quality and suppressing defect related green emission. Two models of ZnO NW growth were developed by establishing the relationship between NW length and diameter for undoped and Al doped ZnO NWs separately. The growth of undoped ZnO NWs followed the diffusion-induced model which was characterized by thin wires being longer than thick wires, while the growth of Al doped ZnO was controlled by Gibbs-Thomson effect which was characterized by thin wires being shorter than thin wires. Local electrode atom probe analysis of ZnO NWs was carried out to study the crystal stoichiometry and Al incorporation. Undoped ZnO NWs were found to be high purity with no detectable impurities

  4. Fast growth of well-aligned ZnO nanowire arrays by a microwave heating method and their photocatalytic properties.

    PubMed

    Cao, Guangxia; Hong, Kunquan; Wang, Wenda; Liu, Liqing; Xu, Mingxiang

    2016-10-28

    The fast growth of aligned ZnO nanowire arrays with optimized structure is attractive for electrical and optical devices. In this paper, we report a controllable and rapid growth of ZnO nanowire arrays by a microwave-assisted hydrothermal method. When using different zinc salts as the precursors, the morphology of the samples changes a lot and the length growth rate is several times different. The growth mechanism is also investigated. It is found that the solution near neutral pH value is ideal for fast nanowire growth, in which the length of the nanowires increases linearly with growth time and the growth rate is over ten times faster than that in the traditional hydrothermal method. Therefore, aligned ZnO nanowire arrays can grow up to tens of microns in a few hours, while the density and sizes of these nanowires can be well controlled. The ZnO nanowire arrays used as photocatalysts present good photocatalytic performance to the degradation of methyl orange (MO) due to the large surface area. So this paper provides an effective method to obtain vertically aligned ZnO nanowire arrays for practical applications. PMID:27655230

  5. Fast growth of well-aligned ZnO nanowire arrays by a microwave heating method and their photocatalytic properties

    NASA Astrophysics Data System (ADS)

    Cao, Guangxia; Hong, Kunquan; Wang, Wenda; Liu, Liqing; Xu, Mingxiang

    2016-10-01

    The fast growth of aligned ZnO nanowire arrays with optimized structure is attractive for electrical and optical devices. In this paper, we report a controllable and rapid growth of ZnO nanowire arrays by a microwave-assisted hydrothermal method. When using different zinc salts as the precursors, the morphology of the samples changes a lot and the length growth rate is several times different. The growth mechanism is also investigated. It is found that the solution near neutral pH value is ideal for fast nanowire growth, in which the length of the nanowires increases linearly with growth time and the growth rate is over ten times faster than that in the traditional hydrothermal method. Therefore, aligned ZnO nanowire arrays can grow up to tens of microns in a few hours, while the density and sizes of these nanowires can be well controlled. The ZnO nanowire arrays used as photocatalysts present good photocatalytic performance to the degradation of methyl orange (MO) due to the large surface area. So this paper provides an effective method to obtain vertically aligned ZnO nanowire arrays for practical applications.

  6. Fast growth of well-aligned ZnO nanowire arrays by a microwave heating method and their photocatalytic properties.

    PubMed

    Cao, Guangxia; Hong, Kunquan; Wang, Wenda; Liu, Liqing; Xu, Mingxiang

    2016-10-28

    The fast growth of aligned ZnO nanowire arrays with optimized structure is attractive for electrical and optical devices. In this paper, we report a controllable and rapid growth of ZnO nanowire arrays by a microwave-assisted hydrothermal method. When using different zinc salts as the precursors, the morphology of the samples changes a lot and the length growth rate is several times different. The growth mechanism is also investigated. It is found that the solution near neutral pH value is ideal for fast nanowire growth, in which the length of the nanowires increases linearly with growth time and the growth rate is over ten times faster than that in the traditional hydrothermal method. Therefore, aligned ZnO nanowire arrays can grow up to tens of microns in a few hours, while the density and sizes of these nanowires can be well controlled. The ZnO nanowire arrays used as photocatalysts present good photocatalytic performance to the degradation of methyl orange (MO) due to the large surface area. So this paper provides an effective method to obtain vertically aligned ZnO nanowire arrays for practical applications.

  7. Low-Cost, Large-Area, Facile, and Rapid Fabrication of Aligned ZnO Nanowire Device Arrays.

    PubMed

    Cadafalch Gazquez, Gerard; Lei, Sidong; George, Antony; Gullapalli, Hemtej; Boukamp, Bernard A; Ajayan, Pulickel M; Ten Elshof, Johan E

    2016-06-01

    Well aligned nanowires of ZnO have been made with an electrospinning technique using zinc acetate precursor solutions. Employment of two connected parallel collector plates with a separating gap of 4 cm resulted in a very high degree of nanowire alignment. By adjusting the process parameters, the deposition density of the wires could be controlled. Field effect transistors were prepared by depositing wires between two gold electrodes on top of a heavily doped Si substrate covered with a 300 nm oxide layer. These devices showed good FET characteristics and photosensitivity under UV-illumination. The method provides a fast and scalable fabrication route for functional nanowire arrays with a high degree of alignment and control over nanowire spacing. PMID:27173007

  8. Alignment nature of ZnO nanowires grown on polished and nanoscale etched lithium niobate surface through self-seeding thermal evaporation method

    SciTech Connect

    Mohanan, Ajay Achath; Parthiban, R.; Ramakrishnan, N.

    2015-08-15

    Highlights: • ZnO nanowires were grown directly on LiNbO{sub 3} surface for the first time by thermal evaporation. • Self-alignment of the nanowires due to step bunching of LiNbO{sub 3} surface is observed. • Increased roughness in surface defects promoted well-aligned growth of nanowires. • Well-aligned growth was then replicated in 50 nm deep trenches on the surface. • Study opens novel pathway for patterned growth of ZnO nanowires on LiNbO{sub 3} surface. - Abstract: High aspect ratio catalyst-free ZnO nanowires were directly synthesized on lithium niobate substrate for the first time through thermal evaporation method without the use of a buffer layer or the conventional pre-deposited ZnO seed layer. As-grown ZnO nanowires exhibited a crisscross aligned growth pattern due to step bunching of the polished lithium niobate surface during the nanowire growth process. On the contrary, scratches on the surface and edges of the substrate produced well-aligned ZnO nanowires in these defect regions due to high surface roughness. Thus, the crisscross aligned nature of high aspect ratio nanowire growth on the lithium niobate surface can be changed to well-aligned growth through controlled etching of the surface, which is further verified through reactive-ion etching of lithium niobate. The investigations and discussion in the present work will provide novel pathway for self-seeded patterned growth of well-aligned ZnO nanowires on lithium niobate based micro devices.

  9. Large-scale fabrication of vertically aligned ZnO nanowire arrays

    DOEpatents

    Wang, Zhong L; Das, Suman; Xu, Sheng; Yuan, Dajun; Guo, Rui; Wei, Yaguang; Wu, Wenzhuo

    2013-02-05

    In a method for growing a nanowire array, a photoresist layer is placed onto a nanowire growth layer configured for growing nanowires therefrom. The photoresist layer is exposed to a coherent light interference pattern that includes periodically alternately spaced dark bands and light bands along a first orientation. The photoresist layer exposed to the coherent light interference pattern along a second orientation, transverse to the first orientation. The photoresist layer developed so as to remove photoresist from areas corresponding to areas of intersection of the dark bands of the interference pattern along the first orientation and the dark bands of the interference pattern along the second orientation, thereby leaving an ordered array of holes passing through the photoresist layer. The photoresist layer and the nanowire growth layer are placed into a nanowire growth environment, thereby growing nanowires from the nanowire growth layer through the array of holes.

  10. ZnO nanowire lasers.

    PubMed

    Vanmaekelbergh, Daniël; van Vugt, Lambert K

    2011-07-01

    The pathway towards the realization of optical solid-state lasers was gradual and slow. After Einstein's paper on absorption and stimulated emission of light in 1917 it took until 1960 for the first solid state laser device to see the light. Not much later, the first semiconductor laser was demonstrated and lasing in the near UV spectral range from ZnO was reported as early as 1966. The research on the optical properties of ZnO showed a remarkable revival since 1995 with the demonstration of room temperature lasing, which was further enhanced by the first report of lasing by a single nanowire in 2001. Since then, the research focussed increasingly on one-dimensional nanowires of ZnO. We start this review with a brief description of the opto-electronic properties of ZnO that are related to the wurtzite crystal structure. How these properties are modified by the nanowire geometry is discussed in the subsequent sections, in which we present the confined photon and/or polariton modes and how these can be investigated experimentally. Next, we review experimental studies of laser emission from single ZnO nanowires under different experimental conditions. We emphasize the special features resulting from the sub-wavelength dimensions by presenting our results on single ZnO nanowires lying on a substrate. At present, the mechanism of lasing in ZnO (nanowires) is the subject of a strong debate that is considered at the end of this review. PMID:21552596

  11. Large-scale fabrication of vertically aligned ZnO nanowire arrays

    DOEpatents

    Wang, Zhong Lin; Hu, Youfan; Zhang, Yan; Xu, Chen; Zhu, Guang

    2014-09-09

    A generator includes a substrate, a first electrode layer, a dense plurality of vertically-aligned piezoelectric elongated nanostructures, an insulating layer and a second electrode layer. The substrate has a top surface and the first electrode layer is disposed on the top surface of the substrate. The dense plurality of vertically-aligned piezoelectric elongated nanostructures extends from the first electrode layer. Each of the nanostructures has a top end. The insulating layer is disposed on the top ends of the nanostructures. The second electrode layer is disposed on the non-conductive layer and is spaced apart from the nanostructures.

  12. Surface reconstruction of ZnO nanowire arrays via solvent-evaporation-induced self-assembly

    NASA Astrophysics Data System (ADS)

    Fang, Fang; Zhao, Dongxu; Li, Binghui; Zhang, Zhenzhong; Shen, Dezhen; Wang, Xiaohua

    2011-02-01

    Vertically aligned ZnO nanowires (NWs) can be reconstructed on large scales by a solvent-evaporation-induced method. The morphologies of the nanowires are regulated by changing the concentration of the solution. Possible mechanism, which the compressive residual stresses and wires/wires self-attraction can be responsible for the surface reconstruction, is addressed. Furthermore, we compare the structural properties of ZnO nanowires before and after reconstructed.

  13. Selective area growth of well-ordered ZnO nanowire arrays with controllable polarity.

    PubMed

    Consonni, Vincent; Sarigiannidou, Eirini; Appert, Estelle; Bocheux, Amandine; Guillemin, Sophie; Donatini, Fabrice; Robin, Ivan-Christophe; Kioseoglou, Joseph; Robaut, Florence

    2014-05-27

    Controlling the polarity of ZnO nanowires in addition to the uniformity of their structural morphology in terms of position, vertical alignment, length, diameter, and period is still a technological and fundamental challenge for real-world device integration. In order to tackle this issue, we specifically combine the selective area growth on prepatterned polar c-plane ZnO single crystals using electron-beam lithography, with the chemical bath deposition. The formation of ZnO nanowires with a highly controlled structural morphology and a high optical quality is demonstrated over large surface areas on both polar c-plane ZnO single crystals. Importantly, the polarity of ZnO nanowires can be switched from O- to Zn-polar, depending on the polarity of prepatterned ZnO single crystals. This indicates that no fundamental limitations prevent ZnO nanowires from being O- or Zn-polar. In contrast to their catalyst-free growth by vapor-phase deposition techniques, the possibility to control the polarity of ZnO nanowires grown in solution is remarkable, further showing the strong interest in the chemical bath deposition and hydrothermal techniques. The single O- and Zn-polar ZnO nanowires additionally exhibit distinctive cathodoluminescence spectra. To a broader extent, these findings open the way to the ultimate fabrication of well-organized heterostructures made from ZnO nanowires, which can act as building blocks in a large number of electronic, optoelectronic, and photovoltaic devices.

  14. Growth of vertically aligned ZnO nanorods using textured ZnO films

    PubMed Central

    2011-01-01

    A hydrothermal method to grow vertical-aligned ZnO nanorod arrays on ZnO films obtained by atomic layer deposition (ALD) is presented. The growth of ZnO nanorods is studied as function of the crystallographic orientation of the ZnO films deposited on silicon (100) substrates. Different thicknesses of ZnO films around 40 to 180 nm were obtained and characterized before carrying out the growth process by hydrothermal methods. A textured ZnO layer with preferential direction in the normal c-axes is formed on substrates by the decomposition of diethylzinc to provide nucleation sites for vertical nanorod growth. Crystallographic orientation of the ZnO nanorods and ZnO-ALD films was determined by X-ray diffraction analysis. Composition, morphologies, length, size, and diameter of the nanorods were studied using a scanning electron microscope and energy dispersed x-ray spectroscopy analyses. In this work, it is demonstrated that crystallinity of the ZnO-ALD films plays an important role in the vertical-aligned ZnO nanorod growth. The nanorod arrays synthesized in solution had a diameter, length, density, and orientation desirable for a potential application as photosensitive materials in the manufacture of semiconductor-polymer solar cells. PACS 61.46.Hk, Nanocrystals; 61.46.Km, Structure of nanowires and nanorods; 81.07.Gf, Nanowires; 81.15.Gh, Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.) PMID:21899743

  15. Effect of Ga-doping on the properties of ZnO nanowire

    SciTech Connect

    Ishiyama, Takeshi Nakane, Takaya Fujii, Tsutomu

    2015-02-27

    Arrays of single-crystal zinc oxide (ZnO) nanowires have been synthesized on silicon substrates by vapor-liquid-solid growth techniques. The effect of growth conditions including substrate temperature and Ar gas flow rate on growth properties of ZnO nanowire arrays were studied. Structural and optical characterization was performed using scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy. SEM images of the ZnO nanowire arrays grown at various Ar gas flow rates indicated that the alignment and structural features of ZnO nanowires were affected by the gas flow rate. The PL of the ZnO nanowire arrays exhibited strong ultraviolet (UV) emission at 380 nm and green emission around 510 nm. Moreover, the green emission reduced in Ga-doped sample.

  16. Synthesis, optical and electrochemical properties of ZnO nanowires/graphene oxide heterostructures

    PubMed Central

    2013-01-01

    Large-scale vertically aligned ZnO nanowires with high crystal qualities were fabricated on thin graphene oxide films via a low temperature hydrothermal method. Room temperature photoluminescence results show that the ultraviolet emission of nanowires grown on graphene oxide films was greatly enhanced and the defect-related visible emission was suppressed, which can be attributed to the improved crystal quality and possible electron transfer between ZnO and graphene oxide. Electrochemical property measurement results demonstrated that the ZnO nanowires/graphene oxide have large integral area of cyclic voltammetry loop, indicating that such heterostructure is promising for application in supercapacitors. PMID:23522184

  17. Nanowire Array Gratings with ZnO Combs

    SciTech Connect

    Pan, Zhengwei; Mahurin, Shannon Mark; Dai, Sheng; Lowndes, Douglas H

    2005-01-01

    Diffraction gratings are mainly manufactured by mechanical ruling, interference lithography, or resin replication, which generally require expensive equipment, complicated procedures, and a stable environment. We describe the controlled growth of self-organized microscale ZnO comb gratings by a simple one-step thermal evaporation and condensation method. The ZnO combs consist of an array of very uniform, perfectly aligned, evenly spaced and long single-crystalline ZnO nanowires or nanobelts with periods in the range of 0.2 to 2 {mu}m. Diffraction experiments show that the ZnO combs can function as a tiny three-beam divider that may find applications in miniaturized integrated optics such as three-beam optical pickup systems.

  18. Cu-doping induced ferromagnetism in ZnO nanowires.

    PubMed

    Xu, Congkang; Yang, Kaikun; Huang, Liwei; Wang, Howard

    2009-03-28

    Cu-doped and undoped ZnO nanowires have been successfully fabricated at 600 degrees C using a vapor transport approach. Comprehensive structural analyses on as-fabricated nanowires reveal highly crystalline ZnO nanowires with 0.5 at. % of substitutional Cu doping. Ferromagnetism has been observed in Cu-doped ZnO nanowires but not in undoped ones, which is probably associated with defects involving both Cu dopants and Zn interstitials.

  19. Visible electroluminescence from a ZnO nanowires/p-GaN heterojunction light emitting diode.

    PubMed

    Baratto, C; Kumar, R; Comini, E; Faglia, G; Sberveglieri, G

    2015-07-27

    In the current paper we apply catalyst assisted vapour phase growth technique to grow ZnO nanowires (ZnO nws) on p-GaN thin film obtaining EL emission in reverse bias regime. ZnO based LED represents a promising alternative to III-nitride LEDs, as in free devices: the potential is in near-UV emission and visible emission. For ZnO, the use of nanowires ensures good crystallinity of the ZnO, and improved light extraction from the interface when the nanowires are vertically aligned. We prepared ZnO nanowires in a tubular furnace on GaN templates and characterized the p-n ZnO nws/GaN heterojunction for LED applications. SEM microscopy was used to study the growth of nanowires and device preparation. Photoluminescence (PL) and Electroluminescence (EL) spectroscopies were used to characterize the heterojunction, showing that good quality of PL emission is observed from nanowires and visible emission from the junction can be obtained from the region near ZnO contact, starting from onset bias of 6V.

  20. Visible electroluminescence from a ZnO nanowires/p-GaN heterojunction light emitting diode.

    PubMed

    Baratto, C; Kumar, R; Comini, E; Faglia, G; Sberveglieri, G

    2015-07-27

    In the current paper we apply catalyst assisted vapour phase growth technique to grow ZnO nanowires (ZnO nws) on p-GaN thin film obtaining EL emission in reverse bias regime. ZnO based LED represents a promising alternative to III-nitride LEDs, as in free devices: the potential is in near-UV emission and visible emission. For ZnO, the use of nanowires ensures good crystallinity of the ZnO, and improved light extraction from the interface when the nanowires are vertically aligned. We prepared ZnO nanowires in a tubular furnace on GaN templates and characterized the p-n ZnO nws/GaN heterojunction for LED applications. SEM microscopy was used to study the growth of nanowires and device preparation. Photoluminescence (PL) and Electroluminescence (EL) spectroscopies were used to characterize the heterojunction, showing that good quality of PL emission is observed from nanowires and visible emission from the junction can be obtained from the region near ZnO contact, starting from onset bias of 6V. PMID:26367556

  1. Investigations on the growth and characterization of vertically aligned zinc oxide nanowires by radio frequency magnetronsputtering

    SciTech Connect

    Venkatesh, P. Sundara; Jeganathan, K.

    2013-04-15

    Undoped vertically aligned ZnO nanowires have been grown on silicon (111) substrates by the rf magnetron sputtering technique without metal catalyst. The diameter, length and density distributions of the nanowires have been analyzed with respect to the different growth durations. The tapering of the nanowires is observed for the growth duration of 120 min owing to the insufficient adatoms on the growth front. In the X-ray diffraction pattern, the dominant (002) peak with narrow full width at half maximum (FWHM) of ZnO nanowires indicates the c-axis orientation and high crystalline nature with hexagonal wurtzite crystal structure. The narrow FWHM of E{sub 2}{sup low} and E{sub 2}{sup high} phonon modes (1.4 and 9.1 cm{sup −1}) provide an additional evidence for the high crystalline and optical properties of the nanowires. The low temperature photoluminescence spectra are dominated by the green emission at∼2.28 eV induced by the electron transitions between shallow donor and acceptor energy levels. - Graphical abstract: Coalescence free vertically aligned ZnO nanowires have been grown on silicon (111) substrate by the radio frequency magnetron sputtering technique. Highlights: ► ZnO nanowires have been grown by rf magnetron sputtering. ► A morphologically superior and coalescence free ZnO nanowires have been realized. ► ZnO nanowires exhibit hexagonal wurtzite crystal structure. ► A dominant visible emission indicates the presence of point defects in nanowires.

  2. Photoluminescence characterization of ZnO nanowires functionalization

    NASA Astrophysics Data System (ADS)

    Politi, Jane; Gioffrè, Mariano; Rea, Ilaria; De Stefano, Luca; Rendina, Ivo

    2015-05-01

    Nanostructured photoluminescent materials are optimal transducers for optical biosensors due to their capacity to convert molecular interactions in light signals without contamination or deterioration of the samples. In recent years, nanostructured biosensors with low cost and readily available properties have been developed for such applications as therapeutics, diagnostic and environmental. Zinc oxide nanowires (ZnO NWs) is material with unique properties and due to these they were widely studied in many fields as electronics, optics, and photonics. ZnO NWs can be either grown independently or deposited on solid support, such as glass, gold substrates and crystalline silicon. Vertical aligned ZnO forest on a substrate shows specific advantages in photonic device fabrication. ZnO NWs are typically synthesized by such techniques classified as vapour phase and solution phase synthesis. In particular, hydrothermal methods have received a lot of attention and have been widely used for synthesis of ZnO NWs. This technique shows more crystalline defects than others due to oxygen vacancies, so as the material shows intense photoluminescence emission under laser irradiation. ZnO NWs surface is highly hydrolysed, so it is covered by OH reactive groups, and standard biomodification chemistry can be used in order to bind bioprobes on the surface. In this work, we present our newest results on synthetic nanostructured materials characterization for optical biosensors applications. In particular, we characterize the ZnO NWs structure grown on crystalline silicon by SEM images and the biomodification by photoluminesce technique, fluorescence microscopy, water contact angle and FT-IR measurements.

  3. Enhanced field emission from ZnO nanowire arrays utilizing MgO buffer between seed layer and silicon substrate

    NASA Astrophysics Data System (ADS)

    Chen, Si; Chen, Jiangtao; Liu, Jianlin; Qi, Jing; Wang, Yuhua

    2016-11-01

    Field emitters based on ZnO nanowires and other nanomaterials are promising high-brightness electron sources for field emission display, microscopy and other applications. The performance of a ZnO nanowire field emitter is linked to the quality, conductivity and alignment of the nanowires on a substrate, therefore requiring ways to improve these parameters. Here, ZnO nanowire arrays were grown on ZnO seed layer on silicon substrate with MgO buffer between the seed layer and Si. The turn-on field and enhancement factor of these nanowire arrays are 3.79 V/μm and 3754, respectively. These properties are improved greatly compared to those of ZnO nanowire arrays grown on ZnO seed layer without MgO buffer, which are 5.06 V/μm and 1697, respectively. The enhanced field emission properties can be attributed to better electron transport in seed layer, and better nanowire alignment because of MgO buffer.

  4. Well-aligned zinc oxide nanorods and nanowires prepared without catalyst

    NASA Astrophysics Data System (ADS)

    Liu, F.; Cao, P. J.; Zhang, H. R.; Shen, C. M.; Wang, Z.; Li, J. Q.; Gao, H. J.

    2005-01-01

    Without catalyst and at a low temperature (550 °C), well-aligned ZnO nanorods and nanowires were prepared on porous silicon substrates using a simple method. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) results confirm that both the nanorods and the nanowires are perfect single crystals with the wurtzite structure. The diameters range from 40 to 100 nm. The growth directions are along the [0 0 0 1] axis. Photoluminescence (PL) spectra show that the UV emission shifts slightly to low frequency and the intensity of green emission decreases with the improvement of ZnO crystallization.

  5. Power generation from base excitation of a Kevlar composite beam with ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Malakooti, Mohammad H.; Hwang, Hyun-Sik; Sodano, Henry A.

    2015-04-01

    One-dimensional nanostructures such as nanowires, nanorods, and nanotubes with piezoelectric properties have gained interest in the fabrication of small scale power harvesting systems. However, the practical applications of the nanoscale materials in structures with true mechanical strengths have not yet been demonstrated. In this paper, piezoelectric ZnO nanowires are integrated into the fiber reinforced polymer composites serving as an active phase to convert the induced strain energy from ambient vibration into electrical energy. Arrays of ZnO nanowires are grown vertically aligned on aramid fibers through a low-cost hydrothermal process. The modified fabrics with ZnO nanowires whiskers are then placed between two carbon fabrics as the top and the bottom electrodes. Finally, vacuum resin transfer molding technique is utilized to fabricate these multiscale composites. The fabricated composites are subjected to a base excitation using a shaker to generate charge due to the direct piezoelectric effect of ZnO nanowires. Measuring the generated potential difference between the two electrodes showed the energy harvesting application of these multiscale composites in addition to their superior mechanical properties. These results propose a new generation of power harvesting systems with enhanced mechanical properties.

  6. High mobility ZnO nanowires for terahertz detection applications

    NASA Astrophysics Data System (ADS)

    Liu, Huiqiang; Peng, Rufang; Chu, Sheng; Chu, Shijin

    2014-07-01

    An oxide nanowire material was utilized for terahertz detection purpose. High quality ZnO nanowires were synthesized and field-effect transistors were fabricated. Electrical transport measurements demonstrated the nanowire with good transfer characteristics and fairly high electron mobility. It is shown that ZnO nanowires can be used as building blocks for the realization of terahertz detectors based on a one-dimensional plasmon detection configuration. Clear terahertz wave (˜0.3 THz) induced photovoltages were obtained at room temperature with varying incidence intensities. Further analysis showed that the terahertz photoresponse is closely related to the high electron mobility of the ZnO nanowire sample, which suggests that oxide nanoelectronics may find useful terahertz applications.

  7. Development of multifunctional fiber reinforced polymer composites through ZnO nanowire arrays

    NASA Astrophysics Data System (ADS)

    Malakooti, Mohammad H.; Patterson, Brendan A.; Hwang, Hyun-Sik; Sodano, Henry A.

    2016-04-01

    Piezoelectric nanowires, in particular zinc oxide (ZnO) nanowires, have been vastly used in the fabrication of electromechanical devices to convert wasted mechanical energy into useful electrical energy. Over recent years, the growth of vertically aligned ZnO nanowires on various structural fibers has led to the development of fiber-based nanostructured energy harvesting devices. However, the development of more realistic energy harvesters that are capable of continuous power generation requires a sufficient mechanical strength to withstand typical structural loading conditions. Yet, a durable, multifunctional material system has not been developed thoroughly enough to generate electrical power without deteriorating the mechanical performance. Here, a hybrid composite energy harvester is fabricated in a hierarchical design that provides both efficient power generating capabilities while enhancing the structural properties of the fiber reinforced polymer composite. Through a simple and low-cost process, a modified aramid fabric with vertically aligned ZnO nanowires grown on the fiber surface is embedded between woven carbon fabrics, which serve as the structural reinforcement as well as the top and the bottom electrodes of the nanowire arrays. The performance of the developed multifunctional composite is characterized through direct vibration excitation and tensile strength examination.

  8. Hopping conduction in single ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Ma, Yong-Jun; Zhang, Ze; Zhou, Feng; Lu, Li; Jin, Aizi; Gu, Changzhi

    2005-06-01

    ZnO nanowires were synthesized by chemical vapour deposition (CVD). The dc electrical conductivity of a single ZnO nanowire was investigated over a wide temperature range from 300 to 6 K. It is found that the temperature dependence of conductivity follows the relation \\ln \\rho \\sim T^{-1/2} . The conductivity data suggest that the dominant conduction mechanism is Efros-Shklovskii variable-range hopping conduction. The strong electron-electron interaction in the nanowire is also proved by the I-V and d I/d V curves, on which there emerges a Coulomb gap-like structure at low temperatures.

  9. Selective growth of catalyst-free ZnO nanowire arrays on Al:ZnO for device application

    SciTech Connect

    Chung, T. F.; Luo, L. B.; He, Z. B.; Leung, Y. H.; Shafiq, I.; Yao, Z. Q.; Lee, S. T.

    2007-12-03

    Vertically aligned ZnO nanowire (NW) arrays have been synthesized selectively on patterned aluminum-doped zinc oxide (AZO) layer deposited on silicon substrates without using any metal catalysts. The growth region was defined by conventional photolithography with an insulating template. Careful control of the types of template materials and growth conditions allows good alignment and growth selectivity for ZnO NW arrays. Sharp ultraviolet band-edge peak observed in the photoluminescence spectra of the patterned ZnO NW arrays reveals good optical qualities. The current-voltage characteristics of ZnO NWs/AZO/p-Si device suggest that patterned and aligned ZnO NW arrays on AZO may be used in optoelectronic devices.

  10. Flexible Dye-Sensitized Solar Cell Based on Vertical ZnO Nanowire Arrays

    PubMed Central

    2011-01-01

    Flexible dye-sensitized solar cells are fabricated using vertically aligned ZnO nanowire arrays that are transferred onto ITO-coated poly(ethylene terephthalate) substrates using a simple peel-off process. The solar cells demonstrate an energy conversion efficiency of 0.44% with good bending tolerance. This technique paves a new route for building large-scale cost-effective flexible photovoltaic and optoelectronic devices. PMID:27502660

  11. Vertically aligned zinc oxide nanowires electrodeposited within porous polycarbonate templates for vibrational energy harvesting.

    PubMed

    Boughey, Francesca L; Davies, Timothy; Datta, Anuja; Whiter, Richard A; Sahonta, Suman-Lata; Kar-Narayan, Sohini

    2016-07-15

    A piezoelectric nanogenerator has been fabricated using a simple, fast and scalable template-assisted electrodeposition process, by which vertically aligned zinc oxide (ZnO) nanowires were directly grown within a nanoporous polycarbonate (PC) template. The nanowires, having average diameter 184 nm and length 12 μm, are polycrystalline and have a preferred orientation of the [100] axis parallel to the long axis. The output power density of a nanogenerator fabricated from the as-grown ZnO nanowires still embedded within the PC template was found to be 151 ± 25 mW m(-3) at an impedance-matched load, when subjected to a low-level periodic (5 Hz) impacting force akin to gentle finger tapping. An energy conversion efficiency of ∼4.2% was evaluated for the electrodeposited ZnO nanowires, and the ZnO-PC composite nanogenerator was found to maintain good energy harvesting performance through 24 h of continuous fatigue testing. This is particularly significant given that ZnO-based nanostructures typically suffer from mechanical and/or environmental degradation that otherwise limits their applicability in vibrational energy harvesting. Our template-assisted synthesis of ZnO nanowires embedded within a protective polymer matrix through a single growth process is thus attractive for the fabrication of low-cost, robust and stable nanogenerators.

  12. Vertically aligned zinc oxide nanowires electrodeposited within porous polycarbonate templates for vibrational energy harvesting

    NASA Astrophysics Data System (ADS)

    Boughey, Francesca L.; Davies, Timothy; Datta, Anuja; Whiter, Richard A.; Sahonta, Suman-Lata; Kar-Narayan, Sohini

    2016-07-01

    A piezoelectric nanogenerator has been fabricated using a simple, fast and scalable template-assisted electrodeposition process, by which vertically aligned zinc oxide (ZnO) nanowires were directly grown within a nanoporous polycarbonate (PC) template. The nanowires, having average diameter 184 nm and length 12 μm, are polycrystalline and have a preferred orientation of the [100] axis parallel to the long axis. The output power density of a nanogenerator fabricated from the as-grown ZnO nanowires still embedded within the PC template was found to be 151 ± 25 mW m-3 at an impedance-matched load, when subjected to a low-level periodic (5 Hz) impacting force akin to gentle finger tapping. An energy conversion efficiency of ˜4.2% was evaluated for the electrodeposited ZnO nanowires, and the ZnO-PC composite nanogenerator was found to maintain good energy harvesting performance through 24 h of continuous fatigue testing. This is particularly significant given that ZnO-based nanostructures typically suffer from mechanical and/or environmental degradation that otherwise limits their applicability in vibrational energy harvesting. Our template-assisted synthesis of ZnO nanowires embedded within a protective polymer matrix through a single growth process is thus attractive for the fabrication of low-cost, robust and stable nanogenerators.

  13. Vertically aligned zinc oxide nanowires electrodeposited within porous polycarbonate templates for vibrational energy harvesting.

    PubMed

    Boughey, Francesca L; Davies, Timothy; Datta, Anuja; Whiter, Richard A; Sahonta, Suman-Lata; Kar-Narayan, Sohini

    2016-07-15

    A piezoelectric nanogenerator has been fabricated using a simple, fast and scalable template-assisted electrodeposition process, by which vertically aligned zinc oxide (ZnO) nanowires were directly grown within a nanoporous polycarbonate (PC) template. The nanowires, having average diameter 184 nm and length 12 μm, are polycrystalline and have a preferred orientation of the [100] axis parallel to the long axis. The output power density of a nanogenerator fabricated from the as-grown ZnO nanowires still embedded within the PC template was found to be 151 ± 25 mW m(-3) at an impedance-matched load, when subjected to a low-level periodic (5 Hz) impacting force akin to gentle finger tapping. An energy conversion efficiency of ∼4.2% was evaluated for the electrodeposited ZnO nanowires, and the ZnO-PC composite nanogenerator was found to maintain good energy harvesting performance through 24 h of continuous fatigue testing. This is particularly significant given that ZnO-based nanostructures typically suffer from mechanical and/or environmental degradation that otherwise limits their applicability in vibrational energy harvesting. Our template-assisted synthesis of ZnO nanowires embedded within a protective polymer matrix through a single growth process is thus attractive for the fabrication of low-cost, robust and stable nanogenerators. PMID:27256619

  14. In-plane trapping and manipulation of ZnO nanowires by a hybrid plasmonic field

    NASA Astrophysics Data System (ADS)

    Zhang, Lichao; Dou, Xiujie; Min, Changjun; Zhang, Yuquan; Du, Luping; Xie, Zhenwei; Shen, Junfeng; Zeng, Yujia; Yuan, Xiaocong

    2016-05-01

    In general, when a semiconductor nanowire is trapped by conventional laser beam tweezers, it tends to be aligned with the trapping beam axis rather than confined in the horizontal plane, and this limits the application of these nanowires in many in-plane nanoscale optoelectronic devices. In this work, we achieve the in-plane trapping and manipulation of a single ZnO nanowire by a hybrid plasmonic tweezer system on a flat metal surface. The gap between the nanowire and the metallic substrate leads to an enhanced gradient force caused by deep subwavelength optical energy confinement. As a result, the nanowire can be securely trapped in-plane at the center of the excited surface plasmon polariton field, and can also be dynamically moved and rotated by varying the position and polarization direction of the incident laser beam, which cannot be performed using conventional optical tweezers. The theoretical results show that the focused plasmonic field induces a strong in-plane trapping force and a high rotational torque on the nanowire, while the focused optical field produces a vertical trapping force to produce the upright alignment of the nanowire; this is in good agreement with the experimental results. Finally, some typical ZnO nanowire structures are built based on this technique, which thus further confirms the potential of this method for precise manipulation of components during the production of nanoelectronic and nanophotonic devices.In general, when a semiconductor nanowire is trapped by conventional laser beam tweezers, it tends to be aligned with the trapping beam axis rather than confined in the horizontal plane, and this limits the application of these nanowires in many in-plane nanoscale optoelectronic devices. In this work, we achieve the in-plane trapping and manipulation of a single ZnO nanowire by a hybrid plasmonic tweezer system on a flat metal surface. The gap between the nanowire and the metallic substrate leads to an enhanced gradient force

  15. Gold as an intruder in ZnO nanowires.

    PubMed

    Méndez-Reyes, José M; Monroy, B Marel; Bizarro, Monserrat; Güell, Frank; Martínez, Ana; Ramos, Estrella

    2015-09-01

    Several techniques for obtaining ZnO nanowires (ZnO NWs) have been reported in the literature. In particular, vapour-liquid-solid (VLS) with Au as a catalyst is widely used. During this process, Au impurities in the ZnO NWs can be incorporated accidentally, and for this reason we named these impurities as intruders. It is thought that these intruders may produce interesting alterations in the electronic characteristics of nanowires. In the experiment, it is not easy to detect either Au atoms in these nanowires, or the modification that intruders produce in different electrical, optical and other properties. For this reason, in this density functional theory investigation, the effect of Au intruders on ZnO NWs is analysed. Au extended (thread) and point defects (atoms replacing Zn or O, or Au interstitials) are used to simulate the presence of gold atoms. Optimised geometries, band-gaps and density of states indicate that the presence of small amounts of Au drastically modifies the electronic states of ZnO NWs. The results reported here clearly indicate that small amounts of Au have a strong impact on the electronic properties of ZnO NWs, introducing states in the band edges that may promote transitions in the visible spectral region. The presence of Au as an intruder in ZnO NWs enhances the potential use of this system for photonic and photovoltaic applications. PMID:26219752

  16. Homoepitaxial regrowth habits of ZnO nanowire arrays

    PubMed Central

    2011-01-01

    Synthetic regrowth of ZnO nanowires [NWs] under a similar chemical vapor transport and condensation [CVTC] process can produce abundant ZnO nanostructures which are not possible by a single CVTC step. In this work, we report three different regrowth modes of ZnO NWs: axial growth, radial growth, and both directions. The different growth modes seem to be determined by the properties of initial ZnO NW templates. By varying the growth parameters in the first-step CVTC process, ZnO nanostructures (e.g., nanoantenna) with drastically different morphologies can be obtained with distinct photoluminescence properties. The results have implications in guiding the rational synthesis of various ZnO NW heterostructures. PMID:22151820

  17. ZnO nanowire-based CO sensor

    NASA Astrophysics Data System (ADS)

    Ho, Mon-Shu; Chen, Wei-Hao; Chen, Yu-Lin; Chang, Meng-Fan

    This study applied ZnO nanowires to the fabrication of a CO gas sensor operable at room temperature. Following the deposition of a seed layer by spin coating, an aqueous solution method was used to grow ZnO nanowires. This was followed by the self-assembly of an electrode array via dielectrophoresis prior to the fabrication of the CO sensing device. The material characteristics were analyzed using FE-SEM, EDS, GIXRD, FE-TEM, and the measurement of photoluminescence (PL). Our results identified the ZnO nanowires as a single crystalline wurtzite structure. Extending the growth period from 30 min to 360 min led to an increase in the length and diameter of the nanowires. After two hours, the ZnO presented a preferred crystal orientation of [002]. Sensor chips were assembled using 60 pairs of electrodes with gaps of 2 μm, over which were lain nanowires to complete the sensing devices. The average sensing response was 48.37 s and the average recovery time was 65.61 s, with a sensing response magnitude of approximately 6.8% at room temperature.

  18. Materialization of single multicomposite nanowire: entrapment of ZnO nanoparticles in polyaniline nanowire

    PubMed Central

    2011-01-01

    We present materialization of single multicomposite nanowire (SMNW)-entrapped ZnO nanoparticles (NPs) via an electrochemical growth method, which is a newly developed fabrication method to grow a single nanowire between a pair of pre-patterned electrodes. Entrapment of ZnO NPs was controlled via different conditions of SMNW fabrication such as an applied potential and mixture ratio of NPs and aniline solution. The controlled concentration of ZnO NP results in changes in the physical properties of the SMNWs, as shown in transmission electron microscopy images. Furthermore, the electrical conductivity and elasticity of SMNWs show improvement over those of pure polyaniline nanowire. The new nano-multicomposite material showed synergistic effects on mechanical and electrical properties, with logarithmical change and saturation increasing ZnO NP concentration. PMID:21711928

  19. Investigations into the impact of various substrates and ZnO ultra thin seed layers prepared by atomic layer deposition on growth of ZnO nanowire array

    PubMed Central

    2012-01-01

    The impact of various substrates and zinc oxide (ZnO) ultra thin seed layers prepared by atomic layer deposition on the geometric morphology of subsequent ZnO nanowire arrays (NWs) fabricated by the hydrothermal method was investigated. The investigated substrates included B-doped ZnO films, indium tin oxide films, single crystal silicon (111), and glass sheets. Scanning electron microscopy and X-ray diffraction measurements revealed that the geometry and aligment of the NWs were controlled by surface topography of the substrates and thickness of the ZnO seed layers, respectively. According to atomic force microscopy data, we suggest that the substrate, fluctuate amplitude and fluctuate frequency of roughness on ZnO seed layers have a great impact on the alignment of the resulting NWs, whereas the influence of the seed layers' texture was negligible. PMID:22759838

  20. Fabrication and characterization of ZnO nanowire structure on flexible substrate with different solution molarities

    NASA Astrophysics Data System (ADS)

    Lee, Kyu-Hang; Hur, Shin; Kim, Wan-Doo; Choi, Hongsoo

    2010-08-01

    Zinc Oxide nanostructures are capable of applying numerous applications such as optoelectronics, sensors, varistors, and electronic devices. There are several techniques to gorw ZnO nanostructures, including vapor-liquid-solid method, chemical vapor deposition, physical vapor deposition, metal organic chemical vapor deposition and solution process. Recently reported solution method is a simple way to grow ZnO nanowires at a low temperature. One distinctive advantage with the solution method is low processing temperature so that flexible polymer materials can be used as a substrate to grow ZnO nanowires. In this study, ZnO nanowires have been fabricated on PET film by solution method with various molarities to see the effect of different molarities on ZnO nanowire growth. The solution temperature was 80°C and ZnO nanowires were grown for 6 hours for each case. The ZnO seed layer was sputtered at room temperature for 33 min. prior to ZnO nanowire growth. These ZnO nanowires were characterized by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), and photoluminescence (PL) measurements at room temperature using a He-Cd 325-nm laser as the excitation source. We also measured the current using current Atomic Force Microscopy (I-AFM) and presented the possibility to use ZnO nanowires as a power source for micro/nano scale devices. As a result, we found that the characterization of ZnO nanowires changes according to the solution molarity.

  1. Co doped ZnO nanowires as visible light photocatalysts

    NASA Astrophysics Data System (ADS)

    Šutka, Andris; Käämbre, Tanel; Pärna, Rainer; Juhnevica, Inna; Maiorov, Mihael; Joost, Urmas; Kisand, Vambola

    2016-06-01

    High aspect ratio cobalt doped ZnO nanowires showing strong photocatalytic activity and moderate ferromagnetic behaviour were successfully synthesized using a solvothermal method and characterized by scanning electron microscopy (SEM), X-ray powder diffraction (XRD), X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), vibrating sample magnetometry (VSM) and UV-visible absorption spectroscopy. The photocatalytic activities evaluated for visible light driven degradation of an aqueous methylene orange (MO) solution were higher than for Co doped ZnO nanoparticles at the same doping level and synthesized by the same synthesis route. The rate constant for MO visible light photocatalytic degradation was 1.9·10-3 min-1 in case of nanoparticles and 4.2·10-3 min-1 in case of nanowires. We observe strongly enhanced visible light photocatalytic activity for moderate Co doping levels, with an optimum at a composition of Zn0.95Co0.05O. The enhanced photocatalytic activities of Co doped ZnO nanowires were attributed to the combined effects of enhanced visible light absorption at the Co sites in ZnO nanowires, and improved separation efficiency of photogenerated charge carriers at optimal Co doping.

  2. Buffer layer effect on ZnO nanorods growth alignment

    NASA Astrophysics Data System (ADS)

    Zhao, Dongxu; Andreazza, Caroline; Andreazza, Pascal; Ma, Jiangang; Liu, Yichun; Shen, Dezhen

    2005-06-01

    Vertical aligned ZnO nanorods array was fabricated on Si with introducing a ZnO thin film as a buffer layer. Two different nucleation mechanisms were found in growth process. With using Au catalyst, Zn vapor could diffuse into Au nanoclusters with forming a solid solution. Then the ZnO nucleation site is mainly on the catalyst by oxidation of Au/Zn alloy. Without catalyst, nucleation could occur directly on the surface of buffer layer by homoepitaxy. The density and the size of ZnO nanorods could be governed by morphological character of catalyst and buffer layer. The nanorods growth is followed by vapor-solid mechanism.

  3. Oligo and Poly-thiophene/Zno Hybrid Nanowire Solar Cells

    SciTech Connect

    Briseno, Alejandro L.; Holcombe, Thomas W.; Boukai, Akram I.; Garnett, Erik C.; Shelton, Steve W.; Frechet, Jean J. M.; Yang, Peidong

    2009-11-03

    We demonstrate the basic operation of an organic/inorganic hybrid single nanowire solar cell. End-functionalized oligo- and polythiophenes were grafted onto ZnO nanowires to produce p-n heterojunction nanowires. The hybrid nanostructures were characterized via absorption and electron microscopy to determine the optoelectronic properties and to probe the morphology at the organic/inorganic interface. Individual nanowire solar cell devices exhibited well-resolved characteristics with efficiencies as high as 0.036percent, Jsc = 0.32 mA/cm2, Voc = 0.4 V, and a FF = 0.28 under AM 1.5 illumination with 100 mW/cm2 light intensity. These individual test structures will enable detailed analysis to be carried out in areas that have been difficult to study in bulk heterojunction devices.

  4. Dilute Magnetic Semiconductors from Electrodeposited ZnO Nanowires

    SciTech Connect

    Athavan, Nadarajah; Konenkamp, R.

    2011-02-02

    We present experimental results on the magnetic properties of doped ZnO nanowires grown at 80 8C in electrodeposition. We show that impurities such as Al, Mn, Co, and Cu can be incorporated in the nanowires by adding the corresponding metal salts to the electrolyte solution. At concentration levels of a few atomic percent we find the impurity concentration in the solid to be approximately proportional to the precursor concentration in solution. ZnO nanowrires doped with Cu, Co, and Mn show superparamagnetic response at room temperature, while undoped and Al-doped wires show no discernible magnetic response. The results indicate that with Cu, Mn, and Co doping dilute magnetic semiconductors can be prepared.

  5. Method of fabricating vertically aligned group III-V nanowires

    DOEpatents

    Wang, George T; Li, Qiming

    2014-11-25

    A top-down method of fabricating vertically aligned Group III-V micro- and nanowires uses a two-step etch process that adds a selective anisotropic wet etch after an initial plasma etch to remove the dry etch damage while enabling micro/nanowires with straight and smooth faceted sidewalls and controllable diameters independent of pitch. The method enables the fabrication of nanowire lasers, LEDs, and solar cells.

  6. Template-Assisted Hydrothermal Growth of Aligned Zinc Oxide Nanowires for Piezoelectric Energy Harvesting Applications

    PubMed Central

    2016-01-01

    A flexible and robust piezoelectric nanogenerator (NG) based on a polymer-ceramic nanocomposite structure has been successfully fabricated via a cost-effective and scalable template-assisted hydrothermal synthesis method. Vertically aligned arrays of dense and uniform zinc oxide (ZnO) nanowires (NWs) with high aspect ratio (diameter ∼250 nm, length ∼12 μm) were grown within nanoporous polycarbonate (PC) templates. The energy conversion efficiency was found to be ∼4.2%, which is comparable to previously reported values for ZnO NWs. The resulting NG is found to have excellent fatigue performance, being relatively immune to detrimental environmental factors and mechanical failure, as the constituent ZnO NWs remain embedded and protected inside the polymer matrix. PMID:27172933

  7. Template-Assisted Hydrothermal Growth of Aligned Zinc Oxide Nanowires for Piezoelectric Energy Harvesting Applications.

    PubMed

    Ou, Canlin; Sanchez-Jimenez, Pedro E; Datta, Anuja; Boughey, Francesca L; Whiter, Richard A; Sahonta, Suman-Lata; Kar-Narayan, Sohini

    2016-06-01

    A flexible and robust piezoelectric nanogenerator (NG) based on a polymer-ceramic nanocomposite structure has been successfully fabricated via a cost-effective and scalable template-assisted hydrothermal synthesis method. Vertically aligned arrays of dense and uniform zinc oxide (ZnO) nanowires (NWs) with high aspect ratio (diameter ∼250 nm, length ∼12 μm) were grown within nanoporous polycarbonate (PC) templates. The energy conversion efficiency was found to be ∼4.2%, which is comparable to previously reported values for ZnO NWs. The resulting NG is found to have excellent fatigue performance, being relatively immune to detrimental environmental factors and mechanical failure, as the constituent ZnO NWs remain embedded and protected inside the polymer matrix.

  8. Template-Assisted Hydrothermal Growth of Aligned Zinc Oxide Nanowires for Piezoelectric Energy Harvesting Applications.

    PubMed

    Ou, Canlin; Sanchez-Jimenez, Pedro E; Datta, Anuja; Boughey, Francesca L; Whiter, Richard A; Sahonta, Suman-Lata; Kar-Narayan, Sohini

    2016-06-01

    A flexible and robust piezoelectric nanogenerator (NG) based on a polymer-ceramic nanocomposite structure has been successfully fabricated via a cost-effective and scalable template-assisted hydrothermal synthesis method. Vertically aligned arrays of dense and uniform zinc oxide (ZnO) nanowires (NWs) with high aspect ratio (diameter ∼250 nm, length ∼12 μm) were grown within nanoporous polycarbonate (PC) templates. The energy conversion efficiency was found to be ∼4.2%, which is comparable to previously reported values for ZnO NWs. The resulting NG is found to have excellent fatigue performance, being relatively immune to detrimental environmental factors and mechanical failure, as the constituent ZnO NWs remain embedded and protected inside the polymer matrix. PMID:27172933

  9. Thermal-electric model for piezoelectric ZnO nanowires.

    PubMed

    Araneo, Rodolfo; Bini, Fabiano; Rinaldi, Antonio; Notargiacomo, Andrea; Pea, Marialilia; Celozzi, Salvatore

    2015-07-01

    The behavior of ZnO nanowires under uniaxial loading is characterized by means of a numerical model that accounts for all coupled mechanical, electrical, and thermal effects. The paper shows that thermal effects in the nanowires may greatly impact the predicted performance of piezoelectric and piezotronic nanodevices. The pyroelectric effect introduces new equivalent volumic charge in the body of the nanowire and surface charges at the boundaries, where Kapitza resistances are located, that act together with the piezoelectric charges to improve the predicted performance. It is shown that the proposed model is able to reproduce several effects experimentally observed by other research groups, and is a promising tool for the design of ultra-high efficient nanodevices. PMID:26059217

  10. Angle-dependent photodegradation over ZnO nanowire arrays on flexible paper substrates

    PubMed Central

    2014-01-01

    In this study, we grew zinc oxide (ZnO) nanowire arrays on paper substrates using a two-step growth strategy. In the first step, we formed single-crystalline ZnO nanoparticles of uniform size distribution (ca. 4 nm) as seeds for the hydrothermal growth of the ZnO nanowire arrays. After spin-coating of these seeds onto paper, we grew ZnO nanowire arrays conformally on these substrates. The crystal structure of a ZnO nanowire revealed that the nanowires were single-crystalline and had grown along the c axis. Further visualization through annular bright field scanning transmission electron microscopy revealed that the hydrothermally grown ZnO nanowires possessed Zn polarity. From photocatalytic activity measurements of the ZnO nanowire (NW) arrays on paper substrate, we extracted rate constants of 0.415, 0.244, 0.195, and 0.08 s-1 for the degradation of methylene blue at incident angles of 0°, 30°, 60°, and 75°, respectively; that is, the photocatalytic activity of these ZnO nanowire arrays was related to the cosine of the incident angle of the UV light. Accordingly, these materials have promising applications in the design of sterilization systems and light-harvesting devices. PMID:25593556

  11. Synthesis of high crystallinity ZnO nanowire array on polymer substrate and flexible fiber-based sensor.

    PubMed

    Liu, Jinmei; Wu, Weiwei; Bai, Suo; Qin, Yong

    2011-11-01

    Well aligned ZnO nanowire (NW) arrays are grown on Kevlar fiber and Kapton film via the chemical vapor deposition (CVD) method. These NWs have better crystallinity than those synthesized through the low-temperature hydrothermal method. The average length and diameter of ZnO NWs grown on Kevlar fiber can be controlled from 0.5 to 2.76 μm and 30 to 300 nm, respectively. A flexible ultraviolet (UV) sensor based on Kevlar fiber/ZnO NWs hybrid structure is made to detect UV illumination quantificationally.

  12. The effect of excimer laser annealing on ZnO nanowires and their field effect transistors.

    PubMed

    Maeng, Jongsun; Heo, Sungho; Jo, Gunho; Choe, Minhyeok; Kim, Seonghyun; Hwang, Hyunsang; Lee, Takhee

    2009-03-01

    We have investigated the effect of excimer laser annealing on the chemical bonding, electrical, and optical properties of ZnO nanowires. We demonstrate that after laser annealing on the ZnO nanowire field effect transistors, the on-current increases and the threshold voltage shifts in the negative gate bias direction. These electrical results are attributed to the increase of oxygen vacancies as n-type dopants after laser annealing, consistent with the shifts towards higher binding energies of Zn 2p and O 1s in the x-ray photoelectron spectroscopy analysis of as-grown nanowires and laser-annealed ZnO nanowires.

  13. Black-colored ZnO nanowires with enhanced photocatalytic hydrogen evolution

    NASA Astrophysics Data System (ADS)

    Zhang, Nan; Shan, Chong-Xin; Tan, Hua-Qiao; Zhao, Qi; Wang, Shuang-Peng; Sun, Zai-Cheng; Xia, Yong-de; Shen, De-Zhen

    2016-06-01

    Black-colored ZnO nanowires have been prepared in a metal-organic chemical vapor deposition system by employing a relatively low growth temperature and oxygen-deficient conditions. X-ray photoelectron spectroscopy reveals the incorporation of carbon into the nanowires. The photocatalytic hydrogen evolution activity of the black-colored ZnO nanowires is over 2.5 times larger than that of the pristine ZnO nanowires under simulated solar illumination conditions, and the enhanced photocatalytic activity can be attributed to the higher absorption of visible light by the black color and better carrier separation at the ZnO/carbon interface.

  14. Effect of Intrinsic Point Defect on the Magnetic Properties of ZnO Nanowire

    PubMed Central

    Yun, Jiangni; Zhang, Zhiyong; Yin, Tieen

    2013-01-01

    The effect of intrinsic point defect on the magnetic properties of ZnO nanowire is investigated by the first-principles calculation based on the density functional theory (DFT). The calculated results reveal that the pure ZnO nanowire without intrinsic point defect is nonmagnetic and ZnO nanowire with VO, Zni, Oi, OZn, or ZnO point defect also is nonmagnetic. However, a strong spin splitting phenomenon is observed in ZnO nanowire with VZn defect sitting on the surface site. The Mulliken population analysis reveals that the oxygen atoms which are close to the VZn defect do major contribution to the magnetic moment. Partial density states calculation further suggests that the appearance of the half-metallic ferromagnetism in ZnO nanorod with VZn originates from the hybridization of the O2p states with Zn 3d states. PMID:24396300

  15. Effect of intrinsic point defect on the magnetic properties of ZnO nanowire.

    PubMed

    Yun, Jiangni; Zhang, Zhiyong; Yin, Tieen

    2013-01-01

    The effect of intrinsic point defect on the magnetic properties of ZnO nanowire is investigated by the first-principles calculation based on the density functional theory (DFT). The calculated results reveal that the pure ZnO nanowire without intrinsic point defect is nonmagnetic and ZnO nanowire with V(O), Zn(i), O(i), O(Zn), or Zn(O) point defect also is nonmagnetic. However, a strong spin splitting phenomenon is observed in ZnO nanowire with V(Zn) defect sitting on the surface site. The Mulliken population analysis reveals that the oxygen atoms which are close to the V(Zn) defect do major contribution to the magnetic moment. Partial density states calculation further suggests that the appearance of the half-metallic ferromagnetism in ZnO nanorod with V(Zn) originates from the hybridization of the O2p states with Zn 3d states. PMID:24396300

  16. Spatially controlled growth of highly crystalline ZnO nanowires by an inkjet-printing catalyst-free method

    NASA Astrophysics Data System (ADS)

    Güell, Frank; Martínez-Alanis, Paulina R.; Khachadorian, Sevak; Zamani, Reza R.; Franke, Alexander; Hoffmann, Axel; Wagner, Markus R.; Santana, Guillermo

    2016-02-01

    High-density arrays of uniform ZnO nanowires with a high-crystal quality have been synthesized by a catalyst-free vapor-transport method. First, a thin ZnO film was deposited on a Si substrate as nucleation layer for the ZnO nanowires. Second, spatially selective and mask-less growth of ZnO nanowires was achieved using inkjet-printed patterned islands as the nucleation sites on a SiO2/Si substrate. Raman scattering and low temperature photoluminescence measurements were applied to characterize the structural and optical properties of the ZnO nanowires. The results reveal negligible amounts of strain and defects in the mask-less ZnO nanowires as compared to the ones grown on the ZnO thin film, which underlines the potential of the inkjet-printing approach for the growth of high-crystal quality ZnO nanowires.

  17. Synthesis of Fe Doped ZnO Nanowire Arrays that Detect Formaldehyde Gas.

    PubMed

    Jeon, Yoo Sang; Seo, Hyo Won; Kim, Su Hyo; Kim, Young Keun

    2016-05-01

    Owing to their chemical and thermal stability and doping effects on providing electrons to the conduction band, doped ZnO nanowires have generated interest for use in electronic devices. Here we report hydrothermally grown Fe-doped ZnO nanowires and their gas-sensing properties. The synthesized nanowires have a high crystallinity and are 60 nm in diameter and 1.7 μm in length. Field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) are employed to understand the doping effects on the microstructures and gas sensing properties. When the Fe-doped ZnO nanowire arrays were evaluated for gas sensing, responses were recorded through changes in temperature and gas concentration. Gas sensors consisting of ZnO nanowires doped with 3-5 at.% Fe showed optimum formaldehyde (HCHO) sensing performance at each working temperature.

  18. Synthesis of Fe Doped ZnO Nanowire Arrays that Detect Formaldehyde Gas.

    PubMed

    Jeon, Yoo Sang; Seo, Hyo Won; Kim, Su Hyo; Kim, Young Keun

    2016-05-01

    Owing to their chemical and thermal stability and doping effects on providing electrons to the conduction band, doped ZnO nanowires have generated interest for use in electronic devices. Here we report hydrothermally grown Fe-doped ZnO nanowires and their gas-sensing properties. The synthesized nanowires have a high crystallinity and are 60 nm in diameter and 1.7 μm in length. Field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) are employed to understand the doping effects on the microstructures and gas sensing properties. When the Fe-doped ZnO nanowire arrays were evaluated for gas sensing, responses were recorded through changes in temperature and gas concentration. Gas sensors consisting of ZnO nanowires doped with 3-5 at.% Fe showed optimum formaldehyde (HCHO) sensing performance at each working temperature. PMID:27483827

  19. Energy harvesting from vertically aligned PZT nanowire arrays

    NASA Astrophysics Data System (ADS)

    Malakooti, Mohammad H.; Zhou, Zhi; Sodano, Henry A.

    2016-04-01

    In this paper, a nanostructured piezoelectric beam is fabricated using vertically aligned lead zirconate titanate (PZT) nanowire arrays and its capability of continuous power generation is demonstrated through direct vibration tests. The lead zirconate titanate nanowires are grown on a PZT thin film coated titanium foil using a hydrothermal reaction. The PZT thin film serves as a nucleation site while the titanium foil is used as the bottom electrode. Electromechanical frequency response function (FRF) analysis is performed to evaluate the power harvesting efficiency of the fabricated device. Furthermore, the feasibility of the continuous power generation using the nanostructured beam is demonstrated through measuring output voltage from PZT nanowires when beam is subjected to a sinusoidal base excitation. The effect of tip mass on the voltage generation of the PZT nanowire arrays is evaluated experimentally. The final results show the great potential of synthesized piezoelectric nanowire arrays in a wide range of applications, specifically power generation at nanoscale.

  20. Fabrication and characterization of hexagonally patterned quasi-1D ZnO nanowire arrays

    PubMed Central

    2014-01-01

    Quasi-one-dimensional (quasi-1D) ZnO nanowire arrays with hexagonal pattern have been successfully synthesized via the vapor transport process without any metal catalyst. By utilizing polystyrene microsphere self-assembled monolayer, sol–gel-derived ZnO thin films were used as the periodic nucleation sites for the growth of ZnO nanowires. High-quality quasi-1D ZnO nanowires were grown from nucleation sites, and the original hexagonal periodicity is well-preserved. According to the experimental results, the vapor transport solid condensation mechanism was proposed, in which the sol–gel-derived ZnO film acting as a seed layer for nucleation. This simple method provides a favorable way to form quasi-1D ZnO nanostructures applicable to diverse fields such as two-dimensional photonic crystal, nanolaser, sensor arrays, and other optoelectronic devices. PMID:24521308

  1. Fabrication and characterization of hexagonally patterned quasi-1D ZnO nanowire arrays

    NASA Astrophysics Data System (ADS)

    Kuo, Shou-Yi; Lin, Hsin-I.

    2014-02-01

    Quasi-one-dimensional (quasi-1D) ZnO nanowire arrays with hexagonal pattern have been successfully synthesized via the vapor transport process without any metal catalyst. By utilizing polystyrene microsphere self-assembled monolayer, sol-gel-derived ZnO thin films were used as the periodic nucleation sites for the growth of ZnO nanowires. High-quality quasi-1D ZnO nanowires were grown from nucleation sites, and the original hexagonal periodicity is well-preserved. According to the experimental results, the vapor transport solid condensation mechanism was proposed, in which the sol-gel-derived ZnO film acting as a seed layer for nucleation. This simple method provides a favorable way to form quasi-1D ZnO nanostructures applicable to diverse fields such as two-dimensional photonic crystal, nanolaser, sensor arrays, and other optoelectronic devices.

  2. Fabrication and characterization of hexagonally patterned quasi-1D ZnO nanowire arrays.

    PubMed

    Kuo, Shou-Yi; Lin, Hsin-I

    2014-01-01

    Quasi-one-dimensional (quasi-1D) ZnO nanowire arrays with hexagonal pattern have been successfully synthesized via the vapor transport process without any metal catalyst. By utilizing polystyrene microsphere self-assembled monolayer, sol-gel-derived ZnO thin films were used as the periodic nucleation sites for the growth of ZnO nanowires. High-quality quasi-1D ZnO nanowires were grown from nucleation sites, and the original hexagonal periodicity is well-preserved. According to the experimental results, the vapor transport solid condensation mechanism was proposed, in which the sol-gel-derived ZnO film acting as a seed layer for nucleation. This simple method provides a favorable way to form quasi-1D ZnO nanostructures applicable to diverse fields such as two-dimensional photonic crystal, nanolaser, sensor arrays, and other optoelectronic devices. PMID:24521308

  3. Effect of gaseous atmosphere on photoinduced water wetting of ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Yadav, Kavita; Mehta, B. R.; Singh, J. P.

    2016-05-01

    ZnO nanowires were synthesized by using chemical vapor deposition system at 1000°C temperature. The as synthesized ZnO nanowires show superhydrophilic nature with water contact angle value of 0°. After dark storage for about 50 days, the nanowires show superhydrophobic nature with contact angle value of about 155°. When these nanowires were exposed to ultraviolet light in air atmosphere, the nanowires becomes superhydrophilic. It was found that the rate of change of contact angle depends on the gases atmosphere during UV light illumination. The rate of change of contact angle with UV light illumination is higher in presence of oxygen gas whereas it is very slow in presence of hydrogen gas. Possible mechanism for the dependence of photo induced water wetting on ZnO nanowires in gaseous atmosphere is discussed.

  4. Enhanced photocatalytic activity of ultra-high aspect ratio ZnO nanowires due to Cu induced defects

    NASA Astrophysics Data System (ADS)

    Pasupathi Sugavaneshwar, Ramu; Duy Dao, Thang; Nanda, Karuna Kar; Nagao, Tadaaki; Hishita, Shunichi; Sakaguchi, Isao

    2015-12-01

    We report the synthesis of ZnO nanowires in ambient air at 650°C by a single-step vapor transport method using two different sources Zn (ZnO nanowires-I) and Zn:Cu (ZnO nanowires-II). The Zn:Cu mixed source co-vaporize Zn with a small amount of Cu at temperatures where elemental Cu source does not vaporize. This method provides us a facile route for Cu doping into ZnO. The aspect ratio of the grown ZnO nanowires-II was found to be higher by more than five times compared ZnO nanowires-I. Photocatalytic activity was measured by using a solar simulator and its ultraviolet-filtered light. The ZnO nanowires-II shows higher catalytic activity due to increased aspect ratio and higher content of surface defects because of incorporation of Cu impurities.

  5. Optical and morphological properties of graphene sheets decorated with ZnO nanowires via polyol enhancement

    SciTech Connect

    Sharma, Vinay Rajaura, Rajveer Singh; Sharma, Preetam K.; Srivastava, Subodh; Vijay, Y. K.; Sharma, S. S.

    2014-04-24

    Graphene-ZnO nanocomposites have proven to be very useful materials for photovoltaic and sensor applications. Here, we report a facile, one-step in situ polymerization method for synthesis of graphene sheets randomly decorated with zinc oxide nanowires using ethylene glycol as solvent. We have used hydrothermal treatment for growth of ZnO nanowires. UV-visible spectra peak shifting around 288nm and 307 nm shows the presence of ZnO on graphene structure. Photoluminiscence spectra (PL) in 400nm-500nm region exhibits the luminescence quenching effect. Scanning electron microscopy (SEM) image confirms the growth of ZnO nanowires on graphene sheets.

  6. A low-temperature ZnO nanowire ethanol gas sensor prepared on plastic substrate

    NASA Astrophysics Data System (ADS)

    Lin, Chih-Hung; Chang, Shoou-Jinn; Hsueh, Ting-Jen

    2016-09-01

    In this work, a low-temperature ZnO nanowire ethanol gas sensor was prepared on plastic substrate. The operating temperature of the ZnO nanowire ethanol gas sensor was reduced to room temperature using ultraviolet illumination. The experimental results indicate a favorable sensor response at low temperature, with the best response at 60 °C. The results also reveal that the ZnO nanowire ethanol gas sensor can be easily integrated into portable products, whose waste heat can improve sensor response and achieve energy savings, while energy consumption can be further reduced by solar irradiation.

  7. CMOS Alcohol Sensor Employing ZnO Nanowire Sensing Films

    NASA Astrophysics Data System (ADS)

    Santra, S.; Ali, S. Z.; Guha, P. K.; Hiralal, P.; Unalan, H. E.; Dalal, S. H.; Covington, J. A.; Milne, W. I.; Gardner, J. W.; Udrea, F.

    2009-05-01

    This paper reports on the utilization of zinc oxide nanowires (ZnO NWs) on a silicon on insulator (SOI) CMOS micro-hotplate for use as an alcohol sensor. The device was designed in Cadence and fabricated in a 1.0 μm SOI CMOS process at XFAB (Germany). The basic resistive gas sensor comprises of a metal micro-heater (made of aluminum) embedded in an ultra-thin membrane. Gold plated aluminum electrodes, formed of the top metal, are used for contacting with the sensing material. This design allows high operating temperatures with low power consumption. The membrane was formed by using deep reactive ion etching. ZnO NWs were grown on SOI CMOS substrates by a simple and low-cost hydrothermal method. A few nanometer of ZnO seed layer was first sputtered on the chips, using a metal mask, and then the chips were dipped in a zinc nitrate hexahydrate and hexamethylenetramine solution at 90° C to grow ZnO NWs. The chemical sensitivity of the on-chip NWs were studied in the presence of ethanol (C2H5OH) vapour (with 10% relative humidity) at two different temperatures: 200 and 250° C (the corresponding power consumptions are only 18 and 22 mW). The concentrations of ethanol vapour were varied from 175-1484 ppm (pers per million) and the maximum response was observed 40% (change in resistance in %) at 786 ppm at 250° C. These preliminary measurements showed that the on-chip deposited ZnO NWs could be a promising material for a CMOS based ethanol sensor.

  8. Synthesis of Ni(OH)2 nanoflakes on ZnO nanowires by pulse electrodeposition for high-performance supercapacitors

    NASA Astrophysics Data System (ADS)

    Lo, I.-Hsiang; Wang, Jun-Yi; Huang, Kuo-Yen; Huang, Jin-Hua; Kang, Weng P.

    2016-03-01

    A high-performance supercapacitor based on Ni(OH)2 nanoflakes modified ZnO nanowires (NWs) was developed. The well-aligned ZnO NWs were synthesized by chemical bath deposition, followed by pulse electrodeposition of Ni(OH)2 nanoflakes on the surface of ZnO NWs at 1 mA cm-2 current density. The effects of the pulse electrodeposition conditions were systematically investigated. Both the pulse time and relaxation time were found to affect the size and interspacing of the nanoflakes, while the deposition cycle number determines the thickness of the Ni(OH)2 nanoflake shell. The ZnO/Ni(OH)2 nanocomposite electrode fabricated under the optimal pulse electrodeposition conditions has exhibited a large specific capacitance of 1830 F g-1, a high energy density of 51.5 Wh kg-1, and a high power density of 9 kW kg-1, revealing its potential application in electrochemical capacitors.

  9. Rapid large-scale preparation of ZnO nanowires for photocatalytic application

    PubMed Central

    2011-01-01

    ZnO nanowires are a promising nanomaterial for applications in the fields of photocatalysis, nano-optoelectronics, and reinforced composite materials. However, the challenge of producing large-scale ZnO nanowires has stunted the development and practical utilization of ZnO nanowires. In this study, a modified carbothermal reduction method for preparing large-scale ZnO nanowires in less than 5 min is reported. The preparation was performed in a quartz tube furnace at atmospheric pressure without using any catalysts. A mixed gas of air and N2 with a volume ratio of 45:1 was used as the reactive and carrier gas. About 0.8 g ZnO nanowires was obtained using 1 g ZnO and 1 g graphite powder as source materials. The obtained nanowires exhibited a hexagonal wurtzite crystal structure with an average diameter of about 33 nm. Good photocatalytic activity of the nanowires toward the photodegradation of methylene blue dye under UV irradiation was also demonstrated. PMID:21968032

  10. Improved energy density of nanocomposites with aligned PZT nanowires

    NASA Astrophysics Data System (ADS)

    Tang, Haixiong; Lin, Yirong; Sodano, Henry A.

    2011-04-01

    The use of piezoelectric materials has become more popular for a wide range of applications, including structural health monitoring, power harvesting, vibration sensing and actuation. However, piezoceramic materials are often prone to breakage and are difficult to apply to curved surfaces when in their monolithic form. One approach to alleviate these issues is to embed the fragile piezoceramic inclusion into a polymer matrix. The flexible nature of the polymer matrix protects the ceramic from breaking under mechanical loading and makes the resulting compoistes easier to apply onto curved structure. However, most developed active ceramic composites have relatively low electroelastic coupling compared to bulk piezoceramics. There are two main methods to improve the eletroelastic properties of piezoceramic composites, namely using higher aspect ratio active inclusions and alignment of inclusions in the electric field direction. In this paper, the dielectric and energy storage property of nanowire composites is significantly enhanced by aligning the nanowires in the direction of the applied electrical field. PZT nanowires are hydrothermally synthesized and solutioncast into a polymer matrix, and then aligned using a shear flow based stretching method. The alignment was evaluated by scanning electron microscopy images and it is shown that the nanowires can be successfully aligned in the PVDF. The dielectric constant and energy density of the nanocomposites were tested using Agilent E4980A LCR meter and Sawyer-Tower circuit. This testing result shows that the dielectric constant and energy density of the composites can be increased by as much as 35.7% and 49.3% by aligning the nanowires in the electric field direction. Piezoceramic composites with enhanced energy storage property could lead to broader applications when using this type of materials for polymer based capacitive energy storage.

  11. Size and strain dependence of electronic properties in ultrathin ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Peng, Xihong; Copple, Andrew; Wei, Qun

    2014-03-01

    One dimensional nanostructures of group II-VI semiconductors, in particular ZnO, have drawn broad research interests in recent years due to their potential applications in nano-electronics and nano-optics. In this project, electronic structures of ultrathin wurtzite ZnO nanowires were studied using first-principles Density Functional Theory (DFT) calculations. It was found that the nanowire axial lattice constants shrink compared to that of bulk ZnO. The band gap opens for small nanowires due to the quantum confinement effect. In addition, the band gap can be further tuned using uniaxial strain. The effective masses of the electron and the hole in ZnO can be manipulated not only by the size of nanowire, but also through the applied strain. The results were cross checked using different DFT methods, including GGA, DFT +U, and hybrid functionals.

  12. Optical and piezoelectric properties of p-type ZnO nanowires on transparent flexible substrate for energy harvesting

    NASA Astrophysics Data System (ADS)

    Liu, Guocheng; Tam, Man Chun; Hu, Lilei; EI-Rayes, Karim; Guo, Qiuquan; Yang, Jun; Mrad, Nezih; Ban, Dayan

    2014-09-01

    High quality, controlled-structure nanowires (NWs), grown on a transparent flexible substrate, have attracted great interest as a mean of harvesting solar and mechanical energy. Clarifying their optical and piezoelectric properties is essential for this application. In this paper, vertically aligned lithium (Li) doped p-type ZnO NWs were grown, on a micro-patterned transparent flexible polyethylene naphthalate (PEN) substrate, by electrochemical deposition at 88 °C. The substrate was coated with aluminum-doped ZnO (AZO) thin layer, which served as a good seed layer and a transparent conductive oxide layer. Varying the seed layer thickness gave control of the individual NWs' diameter, density and alignment. The effect of doping on the optical band-gap, crystalline quality and Schottky barrier were investigated by X-ray diffraction (XRD) spectroscopy and piezoelectric characterization. The piezoelectric polarization induced piezo-potential in strained ZnO NWs can drive the flow of electrons without an applied electric bias, thus can be used to harvest mechanical energy and convert it into electricity. To prove this concept, flexible piezoelectric energy harvesters based on an array of ZnO NWs were fabricated. Results show that the patterned p-type NW-based energy harvester produces 26-fold output voltage and 19-fold current compared to the conventional un-doped ZnO NW energy harvester from the same acceleration input.

  13. Large-scale solution-phase growth of Cu-doped ZnO nanowire networks.

    PubMed

    Xu, Chunju; Koo, Tae-Woong; Kim, Byung-Sung; Lee, Jae-Hyun; Hwang, Sung Woo; Whang, Dongmok

    2011-07-01

    Film-like networks of Cu-doped (0.8-2.5 at.%) ZnO nanowires were successfully synthesized through a facile solution process at a low temperature (<100 degrees C). The pH value of solution plays a key role in controlling the density and quality of the Cu-doped ZnO nanowires and the dopant concentration of ZnO nanowires was controlled by adjusting the Cu2+/Zn2+ concentration ratio during the synthesis. The structural study showed that the as-prepared Cu-doped ZnO nanowires with a narrow diameter range of 20-30 nm were single crystal and grew along [0001] direction. Photoluminescence and electrical conductivity measurements showed that Cu doping can lead to a redshift in bandgap energy and an increase in the resistivity of ZnO. The thermal annealing of the as-grown nanowires at a low temperature (300 degrees C) decreased the defect-related emission within the visible range and increased the electrical conductivity. The high-quality ZnO nanowire network with controlled doping will enable further application to flexible and transparent electronics.

  14. Imaging Single ZnO Vertical Nanowire Laser Cavities using UV-Laser Scanning Confocal Microscopy

    SciTech Connect

    Gargas, D.J.; Toimil-Molares, M.E.; Yang, P.

    2008-11-17

    We report the fabrication and optical characterization of individual ZnO vertical nanowire laser cavities. Dilute nanowire arrays with interwire spacing>10 ?m were produced by a modified chemical vapor transport (CVT) method yielding an ideal platform for single nanowire imaging and spectroscopy. Lasing characteristics of a single vertical nanowire are presented, as well as high-resolution photoluminescence imaging by UV-laser scanning confocal microscopy. In addition, three-dimensional (3D) mapping of the photoluminescence emission performed in both planar and vertical dimensions demonstrates height-selective imaging useful for vertical nanowires and heteronanostructures emerging in the field of optoelectronics and nanophotonics.

  15. Indium-doped ZnO nanowires with infrequent growth orientation, rough surfaces and low-density surface traps

    PubMed Central

    2013-01-01

    Indium-doped ZnO nanowires have been prepared by vapor transport deposition. With increasing In content, the growth orientation of the nanowires switches from [101_0] to infrequent [022_3] and the surface becomes rough. No surface-related exciton emission is observed in these nanowires. The results indicate that large surface-to-volume ratio, high free electron concentration, and low density of surface traps can be achieved simultaneously in ZnO nanowires via In doping. These unique properties make In-doped ZnO nanowire a potential material for photocatalysis application, which is demonstrated by the enhanced photocatalytic degradation of Rhodamine B. PMID:24256997

  16. Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition

    DOEpatents

    Han, Jung; Su, Jie

    2008-08-05

    Highly ordered and aligned epitaxy of III-Nitride nanowires is demonstrated in this work. <1010> M-axis is identified as a preferential nanowire growth direction through a detailed study of GaN/AlN trunk/branch nanostructures by transmission electron microscopy. Crystallographic selectivity can be used to achieve spatial and orientational control of nanowire growth. Vertically aligned (Al)GaN nanowires are prepared on M-plane AlN substrates. Horizontally ordered nanowires, extending from the M-plane sidewalls of GaN hexagonal mesas or islands demonstrate new opportunities for self-aligned nanowire devices, interconnects, and networks.

  17. Phonon Engineering of ZnO nanowires with controlled chemical doping

    NASA Astrophysics Data System (ADS)

    Bohorquez-Ballen, Jaime; Jayasekera, Thushari

    2013-03-01

    Using the first principles density functional theory (DFT) calculations, we have investigated electronic and dynamical properties of ZnO nanowires in [001] direction with different diameters in the presence of impurities such as Mg, Al, and Ga. As the impurity concentration is varied, electrical and thermal conductivities of nanowires change. In this way, nanowires can be engineered to reduce the thermal transport, such that their thermoelectric properties can be enhanced.

  18. Electrical properties of ZnO single nanowires

    NASA Astrophysics Data System (ADS)

    Stiller, Markus; Barzola-Quiquia, José; Zoraghi, Mahsa; Esquinazi, Pablo

    2015-10-01

    We have investigated the electrical resistance R(T) of ZnO nanowires of ≈ 400 nm diameter as a function of temperature, between 30 K and 300 K, and frequency in the range 40 Hz to 30 MHz. The measurements were done on the as-prepared and after low-energy proton implantation at room temperature. The temperature dependence of the resistance of the wire, before proton implantation, can be well described by two processes in parallel. One process is the fluctuation induced tunneling conductance (FITC) and the other the usual thermally activated process. The existence of a tunneling conductance was also observed in the current-voltage (I-V) results, and can be well described by the FITC model. Impedance spectroscopy measurements in the as-prepared state and at room temperature, indicate and support the idea of two contributions of these two transport processes in the nanowires. Electron backscatter diffraction confirms the existence of different crystalline regions. After the implantation of H+ a third thermally activated process is found that can be explained by taking into account the impurity band splitting due to proton implantation.

  19. Single ZnO nanowire ultraviolet detector with free-recovered contact performance

    NASA Astrophysics Data System (ADS)

    Wang, Feng; Wang, Liang; Li, Xin; Li, Zhenhu; Feng, Shuanglong; Lu, Wenqiang

    2016-06-01

    In this paper, a single ZnO nanowire ultraviolet detector was firstly fabricated by a single ZnO nanowire and silver paint, which can be free-recovered from a Schottky contact to an Ohmic contact. Key effect factors such as the illumination and bias voltage of the free-recovered performance were also investigated. Meanwhile, the reason for the recoverable contact was further confirmed in detail. This result is beneficial for developing the highly sensitive ZnO based ultraviolet detector.

  20. ZnO nanowires as effective luminescent sensing materials for nitroaromatic derivatives.

    PubMed

    Aad, Roy; Simic, Vesna; Le Cunff, Loïc; Rocha, Licinio; Sallet, Vincent; Sartel, Corinne; Lusson, Alain; Couteau, Christophe; Lerondel, Gilles

    2013-10-01

    We report on the efficient room-temperature photoluminescence (PL) quenching of ZnO in the presence of 2,4-dinitrotoluene (DNT) vapor and for concentration as low as 180 ppb. Compared to ZnO thin films, ZnO nanowires exhibit a strong (95%) and fast (41 s) quenching of the PL intensity in the presence of DNT vapor. Assuming that the PL quenching is due to a trapping of the ZnO excitons by adsorbed DNT molecules, Monte-Carlo calculations show that the nanometric dimensions as well as the better crystallographic quality (longer mean free path) of the ZnO nanowires result in an enhanced trapping process at the origin of the improved sensing properties of the nanowires. The results demonstrate the importance of nanostructures in improving the sensitivity of ZnO. The study also reveals the sensing capability of ZnO nanowires and paves the path towards the potential realization of low-cost sub-ppb nitroaromatic derivative sensors.

  1. ZnO nanowires as effective luminescent sensing materials for nitroaromatic derivatives

    NASA Astrophysics Data System (ADS)

    Aad, Roy; Simic, Vesna; Le Cunff, Loïc; Rocha, Licinio; Sallet, Vincent; Sartel, Corinne; Lusson, Alain; Couteau, Christophe; Lerondel, Gilles

    2013-09-01

    We report on the efficient room-temperature photoluminescence (PL) quenching of ZnO in the presence of 2,4-dinitrotoluene (DNT) vapor and for concentration as low as 180 ppb. Compared to ZnO thin films, ZnO nanowires exhibit a strong (95%) and fast (41 s) quenching of the PL intensity in the presence of DNT vapor. Assuming that the PL quenching is due to a trapping of the ZnO excitons by adsorbed DNT molecules, Monte-Carlo calculations show that the nanometric dimensions as well as the better crystallographic quality (longer mean free path) of the ZnO nanowires result in an enhanced trapping process at the origin of the improved sensing properties of the nanowires. The results demonstrate the importance of nanostructures in improving the sensitivity of ZnO. The study also reveals the sensing capability of ZnO nanowires and paves the path towards the potential realization of low-cost sub-ppb nitroaromatic derivative sensors.

  2. ZnO quantum dots-decorated ZnO nanowires for the enhancement of antibacterial and photocatalytic performances

    NASA Astrophysics Data System (ADS)

    Wu, Jyh Ming; Tsay, Li-Yi

    2015-10-01

    We demonstrate highly antibacterial activities for killing off Staphylococcus aureus and Escherichia coli using ZnO nanowires decorated with ZnO quantum dots (so-called ZnO QDs/NWs) under visible-light irradiation and dark conditions. The average size of the ZnO QDs is in the range of 3-5 nm; these were uniformly dispersed on the ZnO nanowires’ surface to form the ZnO QDs/NWs. A significant blue-shift effect was observed using photoluminescence (PL) spectra. The size of the ZnO QDs is strongly dependent on the material’s synthesis time. The ZnO QDs/NWs exhibited an excellent photocatalytic activity under visible-light irradiation. The ZnO QDs’ active sites (i.e. the O-H bond and Zn2+) accelerate the photogenerated-carrier migration from the QDs to the NWs. As a consequence, the electrons reacted with the dissolved oxygen to form oxygen ions and produced hydroperoxyl radicals to enhance photocatalytic activity. The antibacterial activities (as indicated by R-factor-inhibiting activity) of the ZnO QDs/NWs for killing off Staphylococcus aureus and Escherichia coli is around 4.9 and 5.5 under visible-light irradiation and dark conditions, respectively. The hydroxyl radicals served as an efficient oxidized agent for decomposing the organic dye and microorganism species. The antibacterial activities of the ZnO QDs/NWs in the dark may be attributed to the Zn2+ ions that were released from the ZnO QDs and infused into the microbial solution against the growth of bacteria thus disrupting the microorganism. The highly antibacterial and photocatalytic activity of the ZnO QDs/NWs can be well implanted on a screen window, thus offering a promising solution to inhibit the spread of germs under visible-light and dark conditions.

  3. Large hexagonal arrays of aligned ZnO nanorods

    NASA Astrophysics Data System (ADS)

    Banerjee, D.; Rybczynski, J.; Huang, J. Y.; Wang, D. Z.; Kempa, K.; Ren, Z. F.

    2005-02-01

    Large-scale truly periodic arrays of vertically aligned zinc oxide nanorods were grown on pre-patterned and pre-annealed gold dots on a-plane sapphire substrates via the vapor liquid solid mechanism. Periodic arrays of triangular gold islands were first patterned on the a-plane sapphire substrates by the nanosphere self-assembly technique. Zinc has been found to be an effective interfacial modifier between gold and sapphire to form single catalytic dots from triangular islands. The successful fabrication of zinc oxide nanowires in truly periodic arrays opens up the possibility of achieving enhanced room-temperature ultraviolet lasing and photonic crystal based devices and sensors.

  4. Highly aligned vertical GaN nanowires using submonolayer metal catalysts

    DOEpatents

    Wang, George T.; Li, Qiming; Creighton, J. Randall

    2010-06-29

    A method for forming vertically oriented, crystallographically aligned nanowires (nanocolumns) using monolayer or submonolayer quantities of metal atoms to form uniformly sized metal islands that serve as catalysts for MOCVD growth of Group III nitride nanowires.

  5. Gate-tunable photocurrent in ZnO nanowires mediated by nanowire-substrate interface states

    SciTech Connect

    Yang, Liangliang; Wang, Qiaoming; Tao, Xin; Taylor, Shelby P.; Gu, Yi

    2015-03-02

    We report the observation of gate-tunable photocurrent in ZnO nanowires under optical excitation in the visible regime. Particularly, the photocurrent can be tuned by one order of magnitude with moderate changes in the backgate voltages (from −10 V to 10 V), and by more than two orders of magnitude within an extended range of the backgate voltage (several tens of volts). Using scanning photocurrent microscopy, single-nanowire photocurrent spectroscopy, and numerical calculations, we suggest that this gate tunability originates from the nanowire/substrate (Si{sub 3}N{sub 4}) interface states, where the electron occupation of these states and the excitation of electrons are controlled by the backgate voltage. This external gate tunability of the photocarrier generation facilitated by interface states provides an additional way to control photodetecting and photovoltaic properties, and this approach can also be extended to other nanostructures, such as two-dimensional semiconductors, where the surface effects are significant.

  6. Luminescence dynamics of bound exciton of hydrogen doped ZnO nanowires

    DOE PAGES

    Yoo, Jinkyoung; Yi, Gyu -Chul; Chon, Bonghwan; Joo, Taiha; Wang, Zhehui

    2016-04-11

    In this study, all-optical camera, converting X-rays into visible photons, is a promising strategy for high-performance X-ray imaging detector requiring high detection efficiency and ultrafast detector response time. Zinc oxide is a suitable material for all-optical camera due to its fast radiative recombination lifetime in sub-nanosecond regime and its radiation hardness. ZnO nanostructures have been considered as proper building blocks for ultrafast detectors with spatial resolution in sub-micrometer scale. To achieve remarkable enhancement of luminescence efficiency n-type doping in ZnO has been employed. However, luminescence dynamics of doped ZnO nanostructures have not been thoroughly investigated whereas undoped ZnO nanostructures havemore » been employed to study their luminescence dynamics. Here we report a study of luminescence dynamics of hydrogen doped ZnO nanowires obtained by hydrogen plasma treatment. Hydrogen doping in ZnO nanowires gives rise to significant increase in the near-band-edge emission of ZnO and decrease in averaged photoluminescence lifetime from 300 to 140 ps at 10 K. The effects of hydrogen doping on the luminescent characteristics of ZnO nanowires were changed by hydrogen doping process variables.« less

  7. Steering epitaxial alignment of Au, Pd, and AuPd nanowire arrays by atom flux change.

    PubMed

    Yoo, Youngdong; Seo, Kwanyong; Han, Sol; Varadwaj, Kumar S K; Kim, Hyun You; Ryu, Ji Hoon; Lee, Hyuck Mo; Ahn, Jae Pyoung; Ihee, Hyotcherl; Kim, Bongsoo

    2010-02-10

    We have synthesized epitaxial Au, Pd, and AuPd nanowire arrays in vertical or horizontal alignment on a c-cut sapphire substrate. We show that the vertical and horizontal nanowire arrays grow from half-octahedral seeds by the correlations of the geometry and orientation of seed crystals with those of as-grown nanowires. The alignment of nanowires can be steered by changing the atom flux. At low atom deposition flux vertical nanowires grow, while at high atom flux horizontal nanowires grow. Similar vertical/horizontal epitaxial growth is also demonstrated on SrTiO(3) substrates. This orientation-steering mechanism is visualized by molecular dynamics simulations.

  8. Enhanced photoelectric performance in self-powered UV detectors based on ZnO nanowires with plasmonic Au nanoparticles scattered electrolyte

    NASA Astrophysics Data System (ADS)

    Zeng, Yiyu; Ye, Zhizhen; Lu, Bin; Dai, Wei; Pan, Xinhua

    2016-04-01

    Vertically aligned ZnO nanowires (NWs) were grown on a fluorine-doped tin-oxide-coated glass substrate by a hydrothermal method. Au nanoparticles were well dispersed in the mixed solution of ethanol and deionized water. A simple self-powered ultraviolet detector based on solid-liquid heterojunction was fabricated, utilizing ZnO NWs as active photoanode and such prepared mixed solution as electrolyte. The introduction of Au nanoparticles results in considerable improvements in the responsivity and sensitivity of the device compared with the one using deionized water as electrolyte, which is attributed to the enhanced light harvesting by Au nanoparticles.

  9. Microfabricated environmental barrier using ZnO nanowire on metal mesh

    NASA Astrophysics Data System (ADS)

    Shin, Young-Min; Lee, Seung-Ki; Lee, Joo-Yong; Kim, Jun-Ho; Park, Jae-Hyoung; Ji, Chang-Hyeon

    2013-12-01

    In this study, a waterproof environmental barrier for microsensor package has been developed using metal mesh covered with zinc oxide (ZnO) nanowire. A near superhydrophobic surface with two-dimensional array of holes has been fabricated by hydrothermal growth of ZnO nanowire on an off-the-shelf steel use stainless (SUS) mesh. For a twill-woven SUS wire mesh having wire thickness of 30 µm and gap of 33 µm, a maximum contact angle of 160.40° and a minimum contact angle hysteresis of 15.23° have been achieved using ZnO nanowire grown on the wire surface and further deposition of FC film. The mesh was able to withstand a maximum water pressure of 2,459.8 Pa. The measured height of ZnO nanowire was approximately 2-3 µm. The fabricated SUS mesh covered with ZnO nanowire has been assembled with a microphone package, and waterproof characteristics have been measured by cyclic dipping test at various water levels. For a microphone package having two acoustic ports on top and bottom covered with fabricated mesh, no visible change in acoustic characteristics has been observed up to 1,372.9 Pa of water pressure. Total volume of the package was 6.8 × 9.8 × 1.9 mm3.

  10. Strain Loading Mode Dependent Bandgap Deformation Potential in ZnO Micro/Nanowires.

    PubMed

    Fu, Xuewen; Liao, Zhi-Min; Liu, Ren; Lin, Fang; Xu, Jun; Zhu, Rui; Zhong, Wei; Liu, Yingkai; Guo, Wanlin; Yu, Dapeng

    2015-12-22

    The electronic-mechanical coupling in semiconductor nanostructures under different strain loading modes can modulate their photoelectric properties in different manners. Here, we report the systematic investigation on the strain mode dependent bandgap deformation potential of ZnO micro/nanowires under both uniaxial tensile and bending strains at room temperature. Uniaxial stretching-photoluminescence results show that the deformation potential of the smaller ZnO nanowire (with diameter d = 260 nm) is -30.6 meV/%, and is close to the bulk value, whereas it deviates the bulk value and becomes to be -10.6 meV/% when the wire diameter is increased to d = 2 μm. This unconventional size dependence stems from surface effect induced inhomogeneous strain in the surface layer and the core of the ZnO micro/nanowires under uniaxial tension. For bending load mode, the in situ high-resolution transmission electron microscope analysis reveals that the local strain distributes linearly in the bending cross section. Further cathodoluminescence measurements on a bending ZnO microwire (d = 1.8 μm) demonstrate that the deformation potential is -27 meV/%, whose absolute value is much larger than that of the ZnO microwire under uniaxial tension. Further analysis reveals that the distinct deformation potentials originate from the different deforming modes in ZnO micro/nanowires under bending or uniaxial tensile strains. Our results should facilitate the design of flexible optoelectronic nanodevices. PMID:26517647

  11. ZnO nanowire-based all-optical switch with Reset-Set flip-flop function

    NASA Astrophysics Data System (ADS)

    Mu, L. X.; Shi, W. S.; Zhang, T. P.; Zhang, H. Y.; Wang, Y.; She, G. W.; Gao, Y. H.; Wang, P. F.; Chang, J. C.; Lee, S. T.

    2011-04-01

    An all-optical switch with Reset-Set (RS) flip-flop function has been developed by attaching a derivative of spiropyran on the surface of zinc oxide (ZnO) Nanowire. Using UV/visible irradiation and the fluorescence of spiropyran-modified ZnO nanowire as inputs—set/reset and output, RS flip-flop function can be performed on a single ZnO nanowire or a nanowire array. The configuration of the current all-optical switch represents a potential for developing small-sized all-optical devices, which could be further exploited at higher level of integration.

  12. Controllable positioning and alignment of silver nanowires by tunable hydrodynamic focusing

    NASA Astrophysics Data System (ADS)

    Liu, Mei; Chen, Ying; Guo, Qiuquan; Li, Ruying; Sun, Xueliang; Yang, Jun

    2011-03-01

    Assembly and alignment of nanowires or nanotubes are critical steps for integrating functional nanodevices by the bottom-up strategy. However, it is still challenging to manipulate either an array of nanowires or individual nanowires in a controllable manner. Here we present a simple but versatile method of positioning and aligning nanowires by hydrodynamic focusing that functions as 'hydro-tweezers'. By adjusting the flow duration and flow rates of the sheath flows and sample flow, the density, width and position of the nanowire arrays, as building blocks of nanodevices, can be readily tuned in the hydrodynamic focusing process. This approach exhibits great potentials in the assembly of an array of functional nanodevices. With this method, multiple nanowire arrays can be positioned and aligned on predefined locations. Further focusing the sample flow, nanowires flow in single file. Thus single nanowires can also be lined up and located to desired positions.

  13. "High Quantum Efficiency of Band-Edge Emission from ZnO Nanowires"

    SciTech Connect

    GARGAS, DANIEL; GAO, HANWEI; WANG, HUNGTA; PEIDONG, YANG

    2010-12-01

    External quantum efficiency (EQE) of photoluminescence as high as 20 percent from isolated ZnO nanowires were measured at room temperature. The EQE was found to be highly dependent on photoexcitation density, which underscores the importance of uniform optical excitation during the EQE measurement. An integrating sphere coupled to a microscopic imaging system was used in this work, which enabled the EQE measurement on isolated ZnO nanowires. The EQE values obtained here are significantly higher than those reported for ZnO materials in forms of bulk, thin films or powders. Additional insight on the radiative extraction factor of one-dimensional nanostructures was gained by measuring the internal quantum efficiency of individual nanowires. Such quantitative EQE measurements provide a sensitive, noninvasive method to characterize the optical properties of low-dimensional nanostructures and allow tuning of synthesis parameters for optimization of nanoscale materials.

  14. Effective piezoelectric response of substrate-integrated ZnO nanowire array devices on galvanized steel.

    PubMed

    Velazquez, By Jesus M; Baskaran, Sivapalan; Gaikwad, Anil V; Ngo-Duc, Tam-Triet; He, Xiangtong; Oye, Michael M; Meyyappan, M; Rout, Tapan K; Fu, John Y; Banerjee, Sarbajit

    2013-11-13

    Harvesting waste energy through electromechanical coupling in practical devices requires combining device design with the development of synthetic strategies for large-area controlled fabrication of active piezoelectric materials. Here, we show a facile route to the large-area fabrication of ZnO nanostructured arrays using commodity galvanized steel as the Zn precursor as well as the substrate. The ZnO nanowires are further integrated within a device construct and the effective piezoelectric response is deduced based on a novel experimental approach involving induction of stress in the nanowires through pressure wave propagation along with phase-selective lock-in detection of the induced current. The robust methodology for measurement of the effective piezoelectric coefficient developed here allows for interrogation of piezoelectric functionality for the entire substrate under bending-type deformation of the ZnO nanowires.

  15. Templateless electrodeposition ZnO nanowires for charge transport optimization in OLED structures

    NASA Astrophysics Data System (ADS)

    Polosan, S.; Matei, E.; Ciobotaru, I. C.; Ciobotaru, C. C.

    2016-10-01

    Passivated zinc oxide nanowires (NW) were used to improve the charge injection in organic light-emitting diode (OLED) structures. Conducting polymers, deposited on the well-dispersed ZnO NW, were used to modify the electrical conductivity across the OLED structure because the charge transport is influenced by the interface interactions. Passivation with polymers improves the transport characteristics of the device due to the interaction between ZnO NW and PEDOT:PSS polymer. The hole current density increases with the ZnO NW concentration, which made the current injection more balanced and therefore enhanced the electroluminescence efficiency. A templateless electrochemical deposition method was used to grow zinc oxide nanowires on an ITO/glass substrate because parameters such as the densities and dimensions of the nanowires can be controlled to produce thin and well dispersed structures.

  16. Carrier density driven lasing dynamics in ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Wille, Marcel; Sturm, Chris; Michalsky, Tom; Röder, Robert; Ronning, Carsten; Schmidt-Grund, Rüdiger; Grundmann, Marius

    2016-06-01

    We report on the temporal lasing dynamics of high quality ZnO nanowires using the time-resolved micro-photoluminescence technique. The temperature dependence of the lasing characteristics and of the corresponding decay constants demonstrate the formation of an electron-hole plasma to be the underlying gain mechanism in the considered temperature range from 10 K to 300 K. We found that the temperature-dependent emission onset-time ({t}{{on}}) strongly depends on the excitation power and becomes smallest in the lasing regime, with values below 5 ps. Furthermore, the observed red shift of the dominating lasing modes in time is qualitatively discussed in terms of the carrier density induced change of the refractive index dispersion after the excitation laser pulse. This theory is supported by extending an existing model for the calculation of the carrier density dependent complex refractive index for different temperatures. This model coincides with the experimental observations and reliably describes the evolution of the refractive index after the excitation laser pulse.

  17. Carrier density driven lasing dynamics in ZnO nanowires.

    PubMed

    Wille, Marcel; Sturm, Chris; Michalsky, Tom; Röder, Robert; Ronning, Carsten; Schmidt-Grund, Rüdiger; Grundmann, Marius

    2016-06-01

    We report on the temporal lasing dynamics of high quality ZnO nanowires using the time-resolved micro-photoluminescence technique. The temperature dependence of the lasing characteristics and of the corresponding decay constants demonstrate the formation of an electron-hole plasma to be the underlying gain mechanism in the considered temperature range from 10 K to 300 K. We found that the temperature-dependent emission onset-time ([Formula: see text]) strongly depends on the excitation power and becomes smallest in the lasing regime, with values below 5 ps. Furthermore, the observed red shift of the dominating lasing modes in time is qualitatively discussed in terms of the carrier density induced change of the refractive index dispersion after the excitation laser pulse. This theory is supported by extending an existing model for the calculation of the carrier density dependent complex refractive index for different temperatures. This model coincides with the experimental observations and reliably describes the evolution of the refractive index after the excitation laser pulse.

  18. Physical model for the exotic ultraviolet photo-conductivity of ZnO nanowire films

    NASA Astrophysics Data System (ADS)

    Pan, Yue-Wu; Ren, Shou-Tian; Qu, Shi-Liang; Wang, Qiang

    2013-11-01

    Employing a simple and efficient method of electro-chemical anodization, ZnO nanowire films are fabricated on Zn foil, and an ultraviolet (UV) sensor prototype is formed for investigating the electronic transport through back-to-back double junctions. The UV (365 nm) responses of surface-contacted ZnO film are provided by I—V measurement, along with the current evolution process by on/off of UV illumination. In this paper, the back-to-back metal—seconductor—metal (M—S—M) model is used to explain the electronic transport of a ZnO nanowire film based structure. A thermionic-field electron emission mechanism is employed to fit and explain the as-observed UV sensitive electronic transport properties of ZnO film with surface-modulation by oxygen and water molecular coverage.

  19. One step syntheses of S incorporated ZnO nanowires for photocatalysis applications

    NASA Astrophysics Data System (ADS)

    Awad, Madeha Ahmed; Ibrahim, Eslam Mohamed Mohamed; Ahmed, Ahmed Mohamed

    2015-12-01

    S incorporated ZnO nanowires (NWs) were prepared by vapor transport method using ZnS bulk precursor. Effects of S incorporation on the structural, morphological, optical as well as photocatalysis performance of ZnO NWs were studied. EDAX analysis revealed existence of S with low ratio. A deformation of the hexagonal nanowires was observed inasmuch to the S existence. X-ray diffraction analysis asserted the formation of a single phase of ZnO with the emergence of two weak peaks identifier for ZnS. The low value of the optical band gap (3.10 eV) was ascribed to the increase in the level of the valence band maximum induced by the S doping. The capability of S incorporated ZnO as a photocatalyst was tested by the decomposition of methylene blue.

  20. Study of faceted Au nanoparticle capped ZnO nanowires: antireflection, surface enhanced Raman spectroscopy and photoluminescence aspects

    NASA Astrophysics Data System (ADS)

    Ghosh, A.; Juluri, R. R.; Guha, P.; Sathyavathi, R.; Dash, Ajit; Jena, B. K.; Satyam, P. V.

    2015-02-01

    We report a single step growth process of faceted Au nanoparticles (NPs) on highly c-axis oriented ZnO nanowires (NWs) and report that a system with a lower antireflection coefficient also showed higher surface enhanced Raman spectroscopy (SERS) enhanced factors. Well-dispersed Au NPs are grown on silicon substrate using a thin film-in-air-annealing method (using 1 nm and 5 nm thick Au films on silicon and subsequent annealing in air at 800 °C) wherein enhanced oxide growth at the Au-Si interface was used to inhibit inter-diffusion to avoid Au-Si alloy formation (Au/SiOx/Si). These substrates are used to grow aligned ZnO NWs using a high temperature (≈900 °C) chemical vapour deposition method. Depending on the size and areal density of initial catalytic Au NPs, the resultant photoluminescence, reflectance characteristics, and effectiveness as SERS substrates of the faceted Au NP capped ZnO NWs coatings are systematically studied. The highly oriented and faceted Au NPs on ZnO NWs have been used as free standing SERS substrates to detect sub-micro molar crystal violet molecules with an analytical enhancement factor (AEF) of ≥104 and with high repeatability. The substrate with high-density Au-ZnO heterostructures (5 nm Au case) found to have larger AEF, very low reflectance (≈0.75%) and more green emission.

  1. Single ZnO Nanowire-Based Gas Sensors to Detect Low Concentrations of Hydrogen

    PubMed Central

    Cardoza-Contreras, Marlene N.; Romo-Herrera, José M.; Ríos, Luis A.; García-Gutiérrez, R.; Zepeda, T. A.; Contreras, Oscar E.

    2015-01-01

    Low concentrations of hazardous gases are difficult to detect with common gas sensors. Using semiconductor nanostructures as a sensor element is an alternative. Single ZnO nanowire gas sensor devices were fabricated by manipulation and connection of a single nanowire into a four-electrode aluminum probe in situ in a dual-beam scanning electron microscope-focused ion beam with a manipulator and a gas injection system in/column. The electrical response of the manufactured devices shows response times up to 29 s for a 121 ppm of H2 pulse, with a variation in the nanowire resistance appreciable at room temperature and at 373.15 K of approximately 8% and 14% respectively, showing that ZnO nanowires are good candidates to detect low concentrations of H2. PMID:26690158

  2. Ion bombardment effects on ZnO nanowires during plasma treatment

    NASA Astrophysics Data System (ADS)

    Ra, H.-W.; Choi, K. S.; Ok, C. W.; Jo, S. Y.; Bai, K. H.; Im, Y. H.

    2008-07-01

    We present the effects of ion bombardment on ZnO nanowires caused by their exposure to an Ar inductively coupled plasma. The conductivity of the individual ZnO nanowire was increased in up to 3 orders of magnitude due to increase in both carrier concentration and mobility, with a substantial negative shift in the threshold gate voltage also being observed. The drastic changes in the electrical properties were attributed to the decrease in species adsorbed on the surface, as well as to the increase in oxygen vacancies near the surface caused by ion bombardment.

  3. Coexistence of strong and weak coupling in ZnO nanowire cavities

    NASA Astrophysics Data System (ADS)

    Michalsky, Tom; Franke, Helena; Buschlinger, Robert; Peschel, Ulf; Grundmann, Marius; Schmidt-Grund, Rüdiger

    2016-06-01

    We present a high quality two-dimensional cavity structure based on ZnO nanowires coated with concentrical Bragg reflectors. The spatial mode distribution leads to the simultaneous appearance of the weak and strong coupling regime even at room temperature. Photoluminescence (PL) measurements agree with finite difference time domain (FDTD) simulations. Furthermore the ZnO core nanowires allow for the observation of middle polariton branches between the A- and B-exciton ground state resonances. Further, lasing emission up to room temperature is detected in excitation dependent photoluminescence measurements. Supplementary online material is available in electronic form at http://www.epjap.org

  4. Self-assembled ZnO agave-like nanowires and anomalous superhydrophobicity

    NASA Astrophysics Data System (ADS)

    Yang, Y. H.; Li, Z. Y.; Wang, B.; Wang, C. X.; Chen, D. H.; Yang, G. W.

    2005-09-01

    Thin films of ZnO agave-like nanowires were prepared on amorphous carbon thin layers on silicon substrates using thermal chemical vapour transport and condensation without any metal catalysts. The unusual superhydrophobicity of the fabricated surface was measured; the water contact angle reaches 151.1°. On the basis of experimental and theoretical analyses, it appears likely that the biomimetic microcomposite and nanocomposite surfaces of the prepared thin films of ZnO agave-like nanowires are responsible for the excellent superhydrophobicity.

  5. ZnO Nanowire-Based Corona Discharge Devices Operated Under Hundreds of Volts.

    PubMed

    Yang, Wenming; Zhu, Rong; Zong, Xianli

    2016-12-01

    Minimizing the voltage of corona discharges, especially when using nanomaterials, has been of great interest in the past decade or so. In this paper, we report a new corona discharge device by using ZnO nanowires operated in atmospheric air to realize continuous corona discharge excited by hundreds of volts. ZnO nanowires were synthesized on microelectrodes using electric-field-assisted wet chemical method, and a thin tungsten film was deposited on the microchip to enhance discharging performance. The testing results showed that the corona inception voltages were minimized greatly by using nanowires compared to conventional dischargers as a result of the local field enhancement of nanowires. The corona could be continuously generated and self-sustaining. It was proved that the law of corona inception voltage obeyed the conventional Peek's breakdown criterion. An optimal thickness of tungsten film coated over ZnO nanowires was figured out to obtain the lowest corona inception voltage. The ion concentration of the nanowire-based discharger attained 10(17)/m(3) orders of magnitude, which is practicable for most discharging applications.

  6. ZnO Nanowire-Based Corona Discharge Devices Operated Under Hundreds of Volts.

    PubMed

    Yang, Wenming; Zhu, Rong; Zong, Xianli

    2016-12-01

    Minimizing the voltage of corona discharges, especially when using nanomaterials, has been of great interest in the past decade or so. In this paper, we report a new corona discharge device by using ZnO nanowires operated in atmospheric air to realize continuous corona discharge excited by hundreds of volts. ZnO nanowires were synthesized on microelectrodes using electric-field-assisted wet chemical method, and a thin tungsten film was deposited on the microchip to enhance discharging performance. The testing results showed that the corona inception voltages were minimized greatly by using nanowires compared to conventional dischargers as a result of the local field enhancement of nanowires. The corona could be continuously generated and self-sustaining. It was proved that the law of corona inception voltage obeyed the conventional Peek's breakdown criterion. An optimal thickness of tungsten film coated over ZnO nanowires was figured out to obtain the lowest corona inception voltage. The ion concentration of the nanowire-based discharger attained 10(17)/m(3) orders of magnitude, which is practicable for most discharging applications. PMID:26880727

  7. ZnO Nanowire-Based Corona Discharge Devices Operated Under Hundreds of Volts

    NASA Astrophysics Data System (ADS)

    Yang, Wenming; Zhu, Rong; Zong, Xianli

    2016-02-01

    Minimizing the voltage of corona discharges, especially when using nanomaterials, has been of great interest in the past decade or so. In this paper, we report a new corona discharge device by using ZnO nanowires operated in atmospheric air to realize continuous corona discharge excited by hundreds of volts. ZnO nanowires were synthesized on microelectrodes using electric-field-assisted wet chemical method, and a thin tungsten film was deposited on the microchip to enhance discharging performance. The testing results showed that the corona inception voltages were minimized greatly by using nanowires compared to conventional dischargers as a result of the local field enhancement of nanowires. The corona could be continuously generated and self-sustaining. It was proved that the law of corona inception voltage obeyed the conventional Peek's breakdown criterion. An optimal thickness of tungsten film coated over ZnO nanowires was figured out to obtain the lowest corona inception voltage. The ion concentration of the nanowire-based discharger attained 1017/m3 orders of magnitude, which is practicable for most discharging applications.

  8. Ultra-fast Microwave Synthesis of ZnO Nanowires and their Dynamic Response Toward Hydrogen Gas.

    PubMed

    Qurashi, Ahsanulhaq; Tabet, N; Faiz, M; Yamzaki, Toshinari

    2009-04-25

    Ultra-fast and large-quantity (grams) synthesis of one-dimensional ZnO nanowires has been carried out by a novel microwave-assisted method. High purity Zinc (Zn) metal was used as source material and placed on microwave absorber. The evaporation/oxidation process occurs under exposure to microwave in less than 100 s. Field effect scanning electron microscopy analysis reveals the formation of high aspect-ratio and high density ZnO nanowires with diameter ranging from 70 to 80 nm. Comprehensive structural analysis showed that these ZnO nanowires are single crystal in nature with excellent crystal quality. The gas sensor made of these ZnO nanowires exhibited excellent sensitivity, fast response, and good reproducibility. Furthermore, the method can be extended for the synthesis of other oxide nanowires that will be the building block of future nanoscale devices.

  9. Direct selective growth of ZnO nanowire arrays from inkjet-printed zinc acetate precursor on a heated substrate

    PubMed Central

    2013-01-01

    Inkjet printing of functional materials has drawn tremendous interest as an alternative to the conventional photolithography-based microelectronics fabrication process development. We introduce direct selective nanowire array growth by inkjet printing of Zn acetate precursor ink patterning and subsequent hydrothermal ZnO local growth without nozzle clogging problem which frequently happens in nanoparticle inkjet printing. The proposed process can directly grow ZnO nanowires in any arbitrary patterned shape, and it is basically very fast, low cost, environmentally benign, and low temperature. Therefore, Zn acetate precursor inkjet printing-based direct nanowire local growth is expected to give extremely high flexibility in nanomaterial patterning for high-performance electronics fabrication especially at the development stage. As a proof of concept of the proposed method, ZnO nanowire network-based field effect transistors and ultraviolet photo-detectors were demonstrated by direct patterned grown ZnO nanowires as active layer. PMID:24252130

  10. Field emission property improvement of ZnO nanowires coated with amorphous carbon and carbon nitride films

    NASA Astrophysics Data System (ADS)

    Liao, L.; Li, J. C.; Wang, D. F.; Liu, C.; Liu, C. S.; Fu, Q.; Fan, L. X.

    2005-06-01

    In this paper, we report an approach to prepare a new type of field emitter made up of ZnO nanowires coated with an amorphous carbon (a-C) or carbon nitride film (a-CNx). The coated ZnO nanowires form coaxial nanocables. The best field emission properties, which showed a very low turn-on electric field of 1.5 V µm-1 and an emission current density of 1 mA cm-2 (enough to produce a luminance of 300 cd m-2 from a VGA FED with a typical high-voltage phosphor screen efficacy of 9 lm W-1) under the field of only 2.5 V µm-1, have been obtained from the a-CNx coated ZnO nanowire field emitter among three kinds of emitters: a-C coated ZnO nanowires, a-CNx coated ZnO nanowires and uncoated ZnO nanowires. Microstructures and crystal configuration were investigated by scanning electron microscopy, x-ray diffraction and transmission electron microscopy. Band edge transition without any significant photoluminescence peak relating to intrinsic defects has been observed by photoluminescence measurement. The superior properties of the field emission are attributed to the low work function of the coated carbon nitride film and good electron transport property of the ZnO nanowires with an extremely sharp tip.

  11. Screw dislocation-driven epitaxial solution growth of ZnO nanowires seeded by dislocations in GaN substrates.

    PubMed

    Morin, Stephen A; Jin, Song

    2010-09-01

    In the current examples of dislocation-driven nanowire growth, the screw dislocations that propagate one-dimensional growth originate from spontaneously formed highly defective "seed" crystals. Here we intentionally utilize screw dislocations from defect-rich gallium nitride (GaN) thin films to propagate dislocation-driven growth, demonstrating epitaxial growth of zinc oxide (ZnO) nanowires directly from aqueous solution. Atomic force microscopy confirms screw dislocations are present on the native GaN surface and ZnO nanowires grow directly from dislocation etch pits of heavily etched GaN surfaces. Furthermore, transmission electron microscopy confirms the existence of axial dislocations. Eshelby twist in the resulting ZnO nanowires was confirmed using bright-/dark-field imaging and twist contour analysis. These results further confirm the connection between dislocation source and nanowire growth. This may eventually lead to defect engineering strategies for rationally designed catalyst-free dislocation-driven nanowire growth for specific applications.

  12. Hydrothermal growth of ZnO nanowires on flexible fabric substrates

    NASA Astrophysics Data System (ADS)

    Hong, Gwang-Wook; Yun, Sang-Ho; Kim, Joo-Hyung

    2016-04-01

    ZnO nanowires (NWs) would provide significant enhancement in sensitivity due to high surface to volume ratio. We investigated the first methodical study on the quantitative relationship between the process parameters of solution concentration ratio, structure, and physical and properties of ZnO NWs grown on different flexible fabric surfaces. To develop a fundamental following concerning various substrates, we controlled the growth speed of ZnO NWs and nanowires on cotton surface with easy and moderate cost fabrication method. Using ammonium hydroxide as the reactant with zinc nitrate hexahydrate, ZnO NWs layer have been grown on metal layers, instead of seed layer. ZnO NWs fabrication was done on different fabric substrates such as wool, nylon and polypropylene (PP). After the ZnO NWs grown to each substrates, we coated insulating layer with polyurethane (PU) and ethyl cellulose for prevent external intervention. Detailed electrical characterization was subsequently performed to reveal the working characteristics of the hybrid fabric. For electrical verification of fabricated ZnO NWs, we implemented measurement impact test and material properties with FFT analyzer and LCR meter.

  13. Influence of electromechanical coupling and electron irradiation on the conductivity of individual ZnO nanowire

    NASA Astrophysics Data System (ADS)

    Li, Huifeng; Huang, Yunhua; Zhang, Qi; Liu, Jing; Zhang, Yue

    2011-03-01

    We reported the electrical properties of individual ZnO nanowire (NW) with length 20 μm and diameter 100 nm, which prepared by thermal evaporation process. The individual ZnO NW was connected to the tungsten tips with typical metal-semiconductor-metal model, and the current-voltage curves were measured in a nano-manipulation and measurement system. The results indicated that the conductivity of the individual ZnO NW was decreased for inflicting an additional force on ZnO NW from tungsten tip. Moreover, the rectifier characteristics of ZnO NW were affected with the electron beam turning on or off in the chamber of scanning electron microscope.

  14. Synthesis of ordered ZnO nanowire arrays from aqueous solution using AAO template

    NASA Astrophysics Data System (ADS)

    Kumar, Nagesh; Varma, G. D.; Nath, R.; Srivastava, A. K.

    2011-09-01

    In this paper we report a simple method that enables the easy fabrication of ordered ZnO nanowire arrays using Anodic Aluminium Oxide (AAO) template. We have used a vacuum injection technique to fill solution into the pores of an AAO template. The AAO template has been fabricated by a two-step anodization process using 0.3 M oxalic acid (H2C2O4) solution under a constant voltage of 40 V. The AAO template formed through this process has been detached from Al substrate via an anodic voltage pulse using perchloric acid (HClO4) solution (70%). The nanowires of ZnO have been synthesized by injecting the saturated Zn(NO3)2 solution into the pores of the detached AAO template using a vacuum pump. The ZnO nanowires synthesized by this technique have been found dense & continuous with uniform diameter throughout the length of the wire. The structural characteristics of AAO template and ZnO nanowires have been studied by Field Emission Scanning Electron Microscope (FESEM), Atomic force microscope (AFM) and Transmission Electron Microscope (TEM).

  15. Conductivity of ZnO nanowires, nanoparticles, and thin films using time-resolved terahertz spectroscopy.

    PubMed

    Baxter, Jason B; Schmuttenmaer, Charles A

    2006-12-21

    The terahertz absorption coefficient, index of refraction, and conductivity of nanostructured ZnO have been determined using time-resolved terahertz spectroscopy, a noncontact optical probe. ZnO properties were measured directly for thin films and were extracted from measurements of nanowire arrays and mesoporous nanoparticle films by applying Bruggeman effective medium theory to the composite samples. Annealing significantly reduces the intrinsic carrier concentration in the ZnO films and nanowires, which were grown by chemical bath deposition. The complex-valued, frequency-dependent photoconductivities for all morphologies were found to be similar at short pump-probe delay times. Fits using the Drude-Smith model show that films have the highest mobility, followed by nanowires and then nanoparticles, and that annealing the ZnO increases its mobility. Time constants for decay of photoinjected electron density in films are twice as long as those in nanowires and more than 5 times those for nanoparticles due to increased electron interaction with interfaces and grain boundaries in the smaller-grained materials. Implications for electron transport in dye-sensitized solar cells are discussed.

  16. Hydrothermal Synthesis of ZnO Structures Formed by High-Aspect-Ratio Nanowires for Acetone Detection

    NASA Astrophysics Data System (ADS)

    Cao, Zhen; Wang, Yong; Li, Zhanguo; Yu, Naisen

    2016-07-01

    Snowflake-like ZnO structures originating from self-assembled nanowires were prepared by a low-temperature aqueous solution method. The as-grown hierarchical ZnO structures were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM). The results showed that the snowflake-like ZnO structures were composed of high-aspect-ratio nanowires. Furthermore, gas-sensing properties to various testing gases of 10 and 50 ppm were measured, which confirms that the ZnO structures were of good selectivity and response to acetone and could serve for acetone sensor to detect low-concentration acetone.

  17. Electrically pumped near-ultraviolet lasing from ZnO Nanowire Based Heterojunctions

    NASA Astrophysics Data System (ADS)

    Mu, Richard; Xu, Haiyang; Liu, Yichun

    2014-03-01

    ZnO with a band gap (3.37 eV) and an exciton binding energy (60 meV) is a promising material for ultraviolet (UV) light-emitting diodes (LEDs) and low-threshold lasing diodes. Much progress has been made recently to enhance band edge emission of ZnO nanowire (NW) structure through surface passivation and local surface plasmon enahncement with metal nanparticles. Efforts have been made to fabricate electrically pumped near-ultraviolet lasing devices with metal/insulator/semiconductor laser diode based on ZnO/MgO core/shell nanowires with and without metal nanoparticle presences. The nanowire diode shows higher emission intensity at relatively low operating current density compared with the planar device. The improved efficiency is attributed to enhanced exciton oscillator strength and superior carrier transport properties of single-crystalline ZnO nanowires, and effective surface passivation by MgO coating. Random laser action was confirmed by the calculation of quality factor and the real-time changes of lasing spectra. The results reveal that the MgO coating serves as electron blocking, hole supplying and surface passivation layer for the nanowire heterostructure. Other approaches will also be presented and discussed in the presentation. DMR-0423914, NSF-CREST HRD-0420516, and DOD W911NF-11-1-0156 and -13-1-0153.

  18. Effect of Surface Elasticity on the Piezoelectric Potential of a Bent ZnO Nanowire

    NASA Astrophysics Data System (ADS)

    Yao, Haiyan; Yun, Guohong; Bai, Narsu; Li, Jiangang

    2012-07-01

    The influence of surface elasticity on the piezoelectric potential distribution of a deformed ZnO nanowire is investigated by the effective Young's modulus based upon elastic and piezoelectric theory. When the nanowire in radius 25 nm subjects to an lateral applied force 5 nN, the maximum piezoelectric potential of the nanowire we derived is about 13.8 mV, which approaches much more closely to the experiment measurement value (˜10 mV) [Z. L. Wang and J. H. Song: Science 312 (2006) 242]. Moreover, a comprehensive analysis of maximum piezoelectric potential between the cases with and without the effect of surface elasticity is analyzed. The results show that the values of piezoelectric potential generated in ZnO nanowires are decreased due to the surface stiffening. From the theoretical analysis, the effect of surface elasticity has a significant impact on the piezoelectric potential for a bent ZnO nanowire, actually it reduces the gap between theoretical estimation and experiment measurements.

  19. Ferromagnetism in Gd doped ZnO nanowires: A first principles study

    SciTech Connect

    Aravindh, S. Assa; Schwingenschloegl, Udo E-mail: iman.roqan@kaust.edu.sa; Roqan, Iman S. E-mail: iman.roqan@kaust.edu.sa

    2014-12-21

    In several experimental studies, room temperature ferromagnetism in Gd-doped ZnO nanostructures has been achieved. However, the mechanism and the origin of the ferromagnetism remain controversial. We investigate the structural, magnetic, and electronic properties of Zn{sub 48}O{sub 48} nanowires doped with Gd, using density functional theory. Our findings indicate that substitutionally incorporated Gd atoms prefer occupying the surface Zn sites. Moreover, the formation energy increases with the distance between Gd atoms, signifying that no Gd-Gd segregation occurs in the nanowires within the concentration limit of ≤2%. Gd induces ferromagnetism in ZnO nanowires with magnetic coupling energy up to 21 meV in the neutral state, which increases with additional electron and O vacancy, revealing the role of carriers in magnetic exchange. The potential for achieving room temperature ferromagnetism and high T{sub C} in ZnO:Gd nanowires is evident from the large ferromagnetic coupling energy (200 meV) obtained with the O vacancy. Density of states shows that Fermi level overlaps with Gd f states with the introduction of O vacancy, indicating the possibility of s-f coupling. These results will assist in understanding experimental findings in Gd-doped ZnO nanowires.

  20. Synthesis and characterization of ZnO nanowires by thermal oxidation of Zn thin films at various temperatures.

    PubMed

    Khanlary, Mohammad Reza; Vahedi, Vahid; Reyhani, Ali

    2012-05-02

    In this research high-quality zinc oxide (ZnO) nanowires have been synthesized by thermal oxidation of metallic Zn thin films. Metallic Zn films with thicknesses of 250 nm have been deposited on a glass substrate by the PVD technique. The deposited zinc thin films were oxidized in air at various temperatures ranging between 450 °C to 650 °C. Surface morphology, structural and optical properties of the ZnO nanowires were examined by scanning electron microscope (SEM), X-ray diffraction (XRD), energy dispersive X-ray (EDX) and photoluminescence (PL) measurements. XRD analysis demonstrated that the ZnO nanowires has a wurtzite structure with orientation of (002), and the nanowires prepared at 600 °C has a better crystalline quality than samples prepared at other temperatures. SEM results indicate that by increasing the oxidation temperature, the dimensions of the ZnO nanowires increase. The optimum temperature for synthesizing high density, ZnO nanowires was determined to be 600 °C. EDX results revealed that only Zn and O are present in the samples, indicating a pure ZnO composition. The PL spectra of as-synthesized nanowires exhibited a strong UV emission and a relatively weak green emission.

  1. Characterization and Fabrication of ZnO Nanowires Grown on AlN Thin Film

    SciTech Connect

    Yousefi, Ramin; Kamaluddin, Burhanuddin; Ghoranneviss, Mahmood; Hajakbari, Fatemeh

    2009-07-07

    In this paper, we report ZnO nanowires grown on AlN thin film deposited on glass as substrate by physical vapour deposition. The temperature of substrates was kept between 600 deg. C and 500 deg. C during the growth. The typical average diameters of the obtained nanowires on substrate at 600 deg. C and 500 deg. C was about 57 nm and 22 nm, respectively with several micrometers in lengths. X-ray diffraction and Auger spectroscopy results showed Al diffused from AlN thin film into ZnO nanowires for sample at high temperature zone. In the photoluminescence spectra two emission bands appeared, one related to ultraviolet emission with a strong peak at 380-382 nm, and another related to deep level emission with a weak peak at 510 nm.

  2. Morphology-dependent field emission properties and wetting behavior of ZnO nanowire arrays

    PubMed Central

    2011-01-01

    The fabrication of three kinds of ZnO nanowire arrays with different structural parameters over Au-coated silicon (100) by facile thermal evaporation of ZnS precursor is reported, and the growth mechanism are proposed based on structural analysis. Field emission (FE) properties and wetting behavior were revealed to be strongly morphology dependent. The nanowire arrays in small diameter and high aspect ratio exhibited the best FE performance showing a low turn-on field (4.1 V/μm) and a high field-enhancement factor (1745.8). The result also confirmed that keeping large air within the films was an effective way to obtain super water-repellent properties. This study indicates that the preparation of ZnO nanowire arrays in an optimum structural model is crucial to FE efficiency and wetting behavior. PMID:21711609

  3. Investigation of Nucleation Mechanism and Tapering Observed in ZnO Nanowire Growth by Carbothermal Reduction Technique.

    PubMed

    Kar, Ayan; Low, Ke-Bin; Oye, Michael; Stroscio, Michael A; Dutta, Mitra; Nicholls, Alan; Meyyappan, M

    2011-12-01

    ZnO nanowire nucleation mechanism and initial stages of nanowire growth using the carbothermal reduction technique are studied confirming the involvement of the catalyst at the tip in the growth process. Role of the Au catalyst is further confirmed when the tapering observed in the nanowires can be explained by the change in the shape of the catalyst causing a variation of the contact area at the liquid-solid interface of the nanowires. The rate of decrease in nanowire diameter with length on the average is found to be 0.36 nm/s and this rate is larger near the base. Variation in the ZnO nanowire diameter with length is further explained on the basis of the rate at which Zn atoms are supplied as well as the droplet stability at the high flow rates and temperature. Further, saw-tooth faceting is noticed in tapered nanowires, and the formation is analyzed crystallographically.

  4. Investigation of Nucleation Mechanism and Tapering Observed in ZnO Nanowire Growth by Carbothermal Reduction Technique

    PubMed Central

    2011-01-01

    ZnO nanowire nucleation mechanism and initial stages of nanowire growth using the carbothermal reduction technique are studied confirming the involvement of the catalyst at the tip in the growth process. Role of the Au catalyst is further confirmed when the tapering observed in the nanowires can be explained by the change in the shape of the catalyst causing a variation of the contact area at the liquid–solid interface of the nanowires. The rate of decrease in nanowire diameter with length on the average is found to be 0.36 nm/s and this rate is larger near the base. Variation in the ZnO nanowire diameter with length is further explained on the basis of the rate at which Zn atoms are supplied as well as the droplet stability at the high flow rates and temperature. Further, saw-tooth faceting is noticed in tapered nanowires, and the formation is analyzed crystallographically. PMID:27502628

  5. Compared growth mechanisms of Zn-polar ZnO nanowires on O-polar ZnO and on sapphire.

    PubMed

    Perillat-Merceroz, G; Thierry, R; Jouneau, P H; Ferret, P; Feuillet, G

    2012-03-30

    Controlling the growth of zinc oxide nanowires is necessary to optimize the performance of nanowire-based devices such as photovoltaic solar cells, nano-generators, or light-emitting diodes. With this in mind, we investigate the nucleation and growth mechanisms of ZnO nanowires grown by metalorganic vapor phase epitaxy either on O-polar ZnO or on sapphire substrates. Whatever the substrate, ZnO nanowires are Zn-polar, as demonstrated by convergent beam electron diffraction. For growth on O-polar ZnO substrate, the nanowires are found to sit on O-polar pyramids. As growth proceeds, the inversion domain boundary moves up in order to remain at the top of the O-polar pyramids. For growth on sapphire substrates, the nanowires may also originate from the sapphire/ZnO interface. The presence of atomic steps and the non-polar character of sapphire could be the cause of the Zn-polar crystal nucleation on sapphire, whereas it is proposed that the segregation of aluminum impurities could account for the nucleation of inverted domains for growth on O-polar ZnO.

  6. ZnO nanowires array grown on Ga-doped ZnO single crystal for dye-sensitized solar cells

    PubMed Central

    Hu, Qichang; Li, Yafeng; Huang, Feng; Zhang, Zhaojun; Ding, Kai; Wei, Mingdeng; Lin, Zhang

    2015-01-01

    High quality ZnO nanowires arrays were homoepitaxial grown on Ga-doped ZnO single crystal (GZOSC), which have the advantages of high conductivity, high carrier mobility and high thermal stability. When it was employed as a photoanode in the DSSCs, the cell exhibited a 1.44% power-conversion efficiency under the illumination of one sun (AM 1.5G). The performance is superior to our ZnO nanowires/FTO based DSSCs under the same condition. This enhanced performance is mainly attributed to the perfect interface between the ZnO nanowires and the GZOSC substrate that contributes to lower carrier scattering and recombination rates compared with that grown on traditional FTO substrate. PMID:26099568

  7. Plasma versus thermal annealing for the Au-catalyst growth of ZnO nanocones and nanowires on Al-doped ZnO buffer layers

    NASA Astrophysics Data System (ADS)

    Güell, Frank; Martínez-Alanis, Paulina R.; Roso, Sergio; Salas-Pérez, Carlos I.; García-Sánchez, Mario F.; Santana, Guillermo; Marel Monroy, B.

    2016-06-01

    We successfully synthesized ZnO nanocones and nanowires over polycrystalline Al-doped ZnO (AZO) buffer layers on fused silica substrates by a vapor-transport process using Au-catalyst thin films. Different Au film thicknesses were thermal or plasma annealed in order to analyze their influence on the ZnO nanostructure growth morphology. Striking differences have been observed. Thermal annealing generates a distribution of Au nanoclusters and plasma annealing induces a fragmentation of the Au thin films. While ZnO nanowires are found in the thermal-annealed samples, ZnO nanocones and nanowires have been obtained on the plasma-annealed samples. Enhancement of the preferred c-axis (0001) growth orientation was demonstrated by x-ray diffraction when the ZnO nanocones and nanowires have been grown over the AZO buffer layer. The transmittance spectra of the ZnO nanocones and nanowires show a gradual increase from 375 to 900 nm, and photoluminescence characterization pointed out high concentration of defects leading to observation of a broad emission band in the visible range from 420 to 800 nm. The maximum emission intensity peak position of the broad visible band is related to the thickness of the Au-catalyst for the thermal-annealed samples and to the plasma power for the plasma-annealed samples. Finally, we proposed a model for the plasma versus thermal annealing of the Au-catalyst for the growth of the ZnO nanocones and nanowires. These results are promising for renewable energy applications, in particular for its potential application in solar cells.

  8. Opto-mechano-electrical tripling in ZnO nanowires probed by photocurrent spectroscopy in a high-resolution transmission electron microscope

    SciTech Connect

    Zhang, C.; Golberg, D. E-mail: golberg.dmitri@nims.go.jp; Xu, Z. E-mail: golberg.dmitri@nims.go.jp; Kvashnin, D. G.; Tang, D.-M.; Xue, Y. M.; Bando, Y.; Sorokin, P. B.

    2015-08-31

    Photocurrent spectroscopy of individual free-standing ZnO nanowires inside a high-resolution transmission electron microscope (TEM) is reported. By using specially designed optical in situ TEM system capable of scanning tunneling microscopy probing paired with light illumination, opto-mechano-electrical tripling phenomenon in ZnO nanowires is demonstrated. Splitting of photocurrent spectra at around 3.3 eV under in situ TEM bending of ZnO nanowires directly corresponds to nanowire deformation and appearance of expanded and compressed nanowire sides. Theoretical simulation of a bent ZnO nanowire has an excellent agreement with the experimental data. The splitting effect could be explained by a change in the valence band structure of ZnO nanowires due to a lattice strain. The strain-induced splitting provides important clues for future flexible piezo-phototronics.

  9. Three-dimensional mesoscale heterostructures of ZnO nanowire arrays epitaxially grown on CuGaO2 nanoplates as individual diodes.

    PubMed

    Forticaux, Audrey; Hacialioglu, Salih; DeGrave, John P; Dziedzic, Rafal; Jin, Song

    2013-09-24

    We report a three-dimensional (3D) mesoscale heterostructure composed of one-dimensional (1D) nanowire (NW) arrays epitaxially grown on two-dimensional (2D) nanoplates. Specifically, three facile syntheses are developed to assemble vertical ZnO NWs on CuGaO2 (CGO) nanoplates in mild aqueous solution conditions. The key to the successful 3D mesoscale integration is the preferential nucleation and heteroepitaxial growth of ZnO NWs on the CGO nanoplates. Using transmission electron microscopy, heteroepitaxy was found between the basal planes of CGO nanoplates and ZnO NWs, which are their respective (001) crystallographic planes, by the observation of a hexagonal Moiré fringes pattern resulting from the slight mismatch between the c planes of ZnO and CGO. Careful analysis shows that this pattern can be described by a hexagonal supercell with a lattice parameter of almost exactly 11 and 12 times the a lattice constants for ZnO and CGO, respectively. The electrical properties of the individual CGO-ZnO mesoscale heterostructures were measured using a current-sensing atomic force microscopy setup to confirm the rectifying p-n diode behavior expected from the band alignment of p-type CGO and n-type ZnO wide band gap semiconductors. These 3D mesoscale heterostructures represent a new motif in nanoassembly for the integration of nanomaterials into functional devices with potential applications in electronics, photonics, and energy.

  10. Photogating effects of HgTe nanoparticles on a single ZnO nanowire

    NASA Astrophysics Data System (ADS)

    Hojun, Seong; Kyoungah, Cho; Junggwon, Yun; Kiyeol, Kwak; Hyung, Jun Jin; Sangsig, Kim

    2010-08-01

    In this study, we demonstrate the photogating effects of p-type HgTe nanoparticles (NPs) on an n-type ZnO nanowire (NW). The photogating effects are due to the charge separation of the charge carriers photogenerated in the NPs under illumination and the subsequent accumulation of the photogenerated electrons in the pn junction of the NPs and the NW. The presence of the electrons in the junction reduces the current in the ZnO NW. The photogating effects are proved by the different photocurrent behavior of the ZnO NW to which the HgTe NPs are attached from that of a bare ZnO NW. In addition, the dependence of the photogating effects on the power of the incident light is discussed.

  11. Nanogenerators based on vertically aligned InN nanowires.

    PubMed

    Liu, Guocheng; Zhao, Songrui; Henderson, Robert D E; Leonenko, Zoya; Abdel-Rahman, Eihab; Mi, Zetian; Ban, Dayan

    2016-01-28

    Piezoelectric nanogenerators (NGs) based on vertically aligned InN nanowires (NWs) are fabricated, characterized, and evaluated. In these NGs, arrays of p-type and intrinsic InN NWs prepared by plasma-assisted molecular beam epitaxy (MBE) demonstrate similar piezoelectric properties. The p-type NGs show 160% more output current and 70% more output power product than the intrinsic NGs. The features driving performance enhancement are reduced electrostatic losses due to better NW array morphology, improved electromechanical energy conversion efficiency due to smaller NW diameters, and the higher impedance of intrinsic NGs due to elevated NW surface charge levels. These findings highlight the potential of InN based NGs as a power source for self-powered systems and the importance of NW morphology and surface state in overall NG performance. PMID:26700694

  12. Diameter optimization of VLS-synthesized ZnO nanowires, using statistical design of experiment

    NASA Astrophysics Data System (ADS)

    Shafiei, Sepideh; Nourbakhsh, Amirhasan; Ganjipour, Bahram; Zahedifar, Mostafa; Vakili-Nezhaad, Gholamreza

    2007-09-01

    The possibility of diameter optimization of ZnO nanowires by using statistical design of experiment (DoE) is investigated. In this study, nanowires were synthesized using a vapor-liquid-solid (VLS) growth method in a horizontal reactor. The effects of six synthesis parameters (synthesis time, synthesis temperature, thickness of gold layer, distance between ZnO holder and substrate, mass of ZnO and Ar flow rate) on the average diameter of a ZnO nanowire were examined using the fractional factorial design (FFD) coupled with response surface methodology (RSM). Using a 2III6-3 FFD, the main effects of the thickness of the gold layer, synthesis temperature and synthesis time were concluded to be the key factors influencing the diameter. Then Box-Behnken design (BBD) was exploited to create a response surface from the main factors. The total number of required runs for the DoE process is 25, 8 runs for FFD parameter screening and 17 runs for the response surface obtained by BBD. Three extra runs are done to confirm the predicted results.

  13. Nanostructured Zn and ZnO nanowire thin films for mechanical and self-cleaning applications

    NASA Astrophysics Data System (ADS)

    Shaik, Ummar Pasha; Purkayastha, Debarun Dhar; Krishna, M. Ghanashyam; Madhurima, V.

    2015-03-01

    Nanostructured Zn metal films were deposited by thermal evaporation, on borosilicate glass, Quartz, sapphire, lanthanum aluminate and yttria stabilized zirconia substrates. The as-deposited films are nanocrystalline and show a morphology that consists of triangular nanosheets. The films are hydrophobic with contact angles between 102° and 120° with hardness and Young's modulus between 0.15-0.8 GPa and 18-300 GPa, respectively. Thermal annealing of the films at 500 °C results only in partial oxidation of Zn to ZnO, which indicates good oxidation resistance. Annealing also causes transformation of the Zn nanosheets into ZnO nanowires that are polycrystalline in nature. The ZnO nanowires are superhydrophobic with contact angles between 159° and 162°, contact angle hysteresis between 5° and 10° and exhibit a reversible superhydrophobic-hydrophilic transition under UV irradiation. The nanowires are much softer than the as-deposited Zn metal films, with hardness between 0.02 and 0.4 GPa and Young's modulus between 3 and 35 GPa. The current study thus demonstrates a simple process for fabrication of nanostructured Zn metal films followed by a one-step transformation to nanowires with properties that will be very attractive for mechanical and self-cleaning applications.

  14. First principles investigations on the electronic structure of anchor groups on ZnO nanowires and surfaces

    SciTech Connect

    Dominguez, A.; Lorke, M.; Rosa, A. L.; Frauenheim, Th.; Schoenhalz, A. L.; Dalpian, G. M.; Rocha, A. R.

    2014-05-28

    We report on density functional theory investigations of the electronic properties of monofunctional ligands adsorbed on ZnO-(1010) surfaces and ZnO nanowires using semi-local and hybrid exchange-correlation functionals. We consider three anchor groups, namely thiol, amino, and carboxyl groups. Our results indicate that neither the carboxyl nor the amino group modify the transport and conductivity properties of ZnO. In contrast, the modification of the ZnO surface and nanostructure with thiol leads to insertion of molecular states in the band gap, thus suggesting that functionalization with this moiety may customize the optical properties of ZnO nanomaterials.

  15. Steering epitaxial alignment of Au, Pd, and AuPd nanowire arrays by atom flux change.

    PubMed

    Yoo, Youngdong; Seo, Kwanyong; Han, Sol; Varadwaj, Kumar S K; Kim, Hyun You; Ryu, Ji Hoon; Lee, Hyuck Mo; Ahn, Jae Pyoung; Ihee, Hyotcherl; Kim, Bongsoo

    2010-02-10

    We have synthesized epitaxial Au, Pd, and AuPd nanowire arrays in vertical or horizontal alignment on a c-cut sapphire substrate. We show that the vertical and horizontal nanowire arrays grow from half-octahedral seeds by the correlations of the geometry and orientation of seed crystals with those of as-grown nanowires. The alignment of nanowires can be steered by changing the atom flux. At low atom deposition flux vertical nanowires grow, while at high atom flux horizontal nanowires grow. Similar vertical/horizontal epitaxial growth is also demonstrated on SrTiO(3) substrates. This orientation-steering mechanism is visualized by molecular dynamics simulations. PMID:20050692

  16. Tuning physical and optical properties of ZnO nanowire arrays grown on cotton fibers.

    PubMed

    Athauda, Thushara J; Hari, Parameswar; Ozer, Ruya R

    2013-07-10

    This article reports the first systematic study on the quantitative relationship between the process parameters of solution concentration ratio, structure, and physical and optical properties of ZnO nanowires grown on cotton surfaces. To develop a fundamental understanding concerning the process-structure-activity relations, we grew a series of well-defined, radially oriented, highly dense, and uniform single-crystalline ZnO nanorods and nanoneedles on cotton surfaces by a simple and inexpensive two-step optimized hydrothermal process at a relatively low temperature. This process involves seed treatment of a cotton substrate with ZnO nanocrystals that will serve as the nucleation sites for subsequent anisotropic growth of single crystalline ZnO nanowires. All of the ZnO nanowires exhibit wurtzite crystal structure oriented along the c-axis. For investigating structure-controlled properties, seed-to-growth solutions concentrations ratio ([S]/[G]) of the synthesis process was varied over six different values. Superhydrophobicity was achieved for all morphologies after 1-dodecanethiol modification, which was highly durable after prolonged UV irradiation. Durability of the ZnO materials under laundry condition was also verified. Variation of the [S]/[G] ratio resulted in a morphological transform from nanorods to needle-like structures in conjunction with a drastic change in the physical and optical properties of the ZnO modified cotton surfaces. Higher [S]/[G] ratios yielded formation of ZnO nanoneedles with high degree of crystallinity and higher aspect ratio compared to nanorods. Increasing [S]/[G] ratio resulted in the amount of ZnO grown on the cotton surface to drop significantly, which also caused a decrease in the surface hydrophobicity and UV absorption. In addition, room temperature photoluminescence measurements revealed that the band gap of ZnO widened and the structural defects were reduced as the morphology changed from nanorods to nanoneedles. A similar

  17. Raman and photoluminescence properties of highly Cu doped ZnO nanowires fabricated by vapor-liquid-solid process.

    PubMed

    Zhu, Huichao; Iqbal, Javed; Xu, Hongjun; Yu, Dapeng

    2008-09-28

    Highly Cu doped ZnO nanowires have been fabricated by vapor-liquid-solid (VLS) process. The average concentration of Cu in the ZnO nanowires is estimated to be 6 at. %. The ultrafine synthesized nanowires have diameters nearly 80 nm, while their average length lies in the range of 40 to 90 mum. Raman spectroscopy shows that the Cu doped ZnO nanowires have a typical wurtzite structure. High resolution transmission electron microscopy (HRTEM) investigations of individual nanowires demonstrate that the nanowires have single crystalline structure in which the growth direction is oriented along the c axis. Room temperature photoluminescence spectrum of as prepared nanowires shows two emissions in UV and visible regions that can be ascribed to the near band edge (NBE) transition and defects respectively, while the spectrum of the annealed nanowires exhibits a red shift in UV and a suppression in visible bands. Furthermore, the low temperature (10 K) PL spectrum illustrates a novel dominant blue emission relating to the different valence states of Cu atoms in ZnO, which is explained on the basis of Dingle model.

  18. Highly aligned arrays of high aspect ratio barium titanate nanowires via hydrothermal synthesis

    SciTech Connect

    Bowland, Christopher C.; Zhou, Zhi; Malakooti, Mohammad H.; Sodano, Henry A.

    2015-06-01

    We report on the development of a hydrothermal synthesis procedure that results in the growth of highly aligned arrays of high aspect ratio barium titanate nanowires. Using a multiple step, scalable hydrothermal reaction, a textured titanium dioxide film is deposited on titanium foil upon which highly aligned nanowires are grown via homoepitaxy and converted to barium titanate. Scanning electron microscope images clearly illustrate the effect the textured film has on the degree of orientation of the nanowires. The alignment of nanowires is quantified by calculating the Herman's Orientation Factor, which reveals a 58% improvement in orientation as compared to growth in the absence of the textured film. The ferroelectric properties of barium titanate combined with the development of this scalable growth procedure provide a powerful route towards increasing the efficiency and performance of nanowire-based devices in future real-world applications such as sensing and power harvesting.

  19. Large-scale density functional theory investigation of failure modes in ZnO nanowires.

    PubMed

    Agrawal, Ravi; Paci, Jeffrey T; Espinosa, Horacio D

    2010-09-01

    Electromechanical and photonic properties of semiconducting nanowires depend on their strain states and are limited by their extent of deformation. A fundamental understanding of the mechanical response of individual nanowires is therefore essential to assess system reliability and to define the design space of future nanowire-based devices. Here we perform a large-scale density functional theory (DFT) investigation of failure modes in zinc oxide (ZnO) nanowires. Nanowires as large as 3.6 nm in diameter with 864 atoms were investigated. The study reveals that pristine nanowires can be elastically deformed to strains as high as 20%, prior to a phase transition leading to fracture. The current study suggests that the phase transition predicted at approximately 10% strain in pristine nanowires by the Buckingham pairwise potential (BP) is an artifact of approximations inherent in the BP. Instead, DFT-based energy barrier calculations suggest that defects may trigger heterogeneous phase transition leading to failure. Thus, the difference previously reported between in situ electron microscopy tensile experiments (brittle fracture) and atomistic simulations (phase transition and secondary loading) (Agrawal, R.; Peng, B.; Espinosa, H. D. Nano Lett. 2009, 9 (12), 4177-2183) is elucidated. PMID:20726573

  20. Novel approach to the growth and characterization of aligned epitaxial gallium nitride nanowires

    NASA Astrophysics Data System (ADS)

    Henry, Tania Alicia

    Nanowire devices are potential building blocks for complex electronic circuitry, however, challenges such as in-place alignment, precise positioning and nanowire device integration need to be addressed. In this work selective area grown (SAG), micron sized gallium nitride (GaN) mesas were used as growth substrates for lateral epitaxial GaN nanowire arrays. The thermodynamically stable mesa facets provide a crystallographic match for directed nanowire synthesis by minimizing the surface energy at the interface between the nanowire and substrate Nanowires grow from the sidewalls of GaN mesas forming parallel and hexagonal networks. Alignment occurs in the nonpolar m-axis <10l0> and semipolar <10ll> directions respectively. Gallium nitride nanowires are interconnected between thermodynamically stable and smooth pyramidal (10ll) , and (1l22) surfaces of adjacent GaN mesas, and they also grow from a single mesa to form free-standing nanowire cantilevers. The synthesis of lateral free-standing nanowires has led to exciting studies of their structural, electrical, and optical properties. Characterization of the electrical properties is carried out by in situ probing of single nanowires on the growth substrate inside a scanning electron microscope (SEM). The current transport is found to be largely dominated by thermionic field emission and Fowler-Nordheim tunneling, and is significantly limited by a large contact resistance at the probe-nanowire interface. The carrier concentration and mobilities of the probed nanowires are extracted and are in agreement with standard field effects transistors (FETs) fabricated from nanowires grown using similar growth conditions. These results reveal that electrical probing of lateral GaN nanowires is a reliable means of characterizing their electrical properties once the interface resistance between the probe and nanowire is considered. The optical properties of the nanowires were investigated. Photon emission at 3.26 eV dominated the

  1. Low-Temperature Preparation of Ag-Doped ZnO Nanowire Arrays, DFT Study, and Application to Light-Emitting Diode.

    PubMed

    Pauporté, Thierry; Lupan, Oleg; Zhang, Jie; Tugsuz, Tugba; Ciofini, Ilaria; Labat, Frédéric; Viana, Bruno

    2015-06-10

    Doping ZnO nanowires (NWs) by group IB elements is an important challenge for integrating nanostructures into functional devices with better and tuned performances. The growth of Ag-doped ZnO NWs by electrodeposition at 90 °C using a chloride bath and molecular oxygen precursor is reported. Ag acts as an electrocatalyst for the deposition and influences the nucleation and growth of the structures. The silver atomic concentration in the wires is controlled by the additive concentration in the deposition bath and a content up to 3.7 atomic % is reported. XRD analysis shows that the integration of silver enlarges the lattice parameters of ZnO. The optical measurements also show that the direct optical bandgap of ZnO is reduced by silver doping. The bandgap shift and lattice expansion are explained by first principle calculations using the density functional theory (DFT) on the silver impurity integration as an interstitial (Ag(i)) and as a substitute of zinc atom (Ag(Zn)) in the crystal lattice. They notably indicate that Ag(Zn) doping forms an impurity band because of Ag 4d and O 2p orbital interactions, shifting the Fermi level toward the valence band. At least, Ag-doped ZnO vertically aligned nanowire arrays have been epitaxially grown on GaN(001) substrate. The heterostructure has been inserted in a light emitting device. UV-blue light emission has been achieved with a low emission threshold of 5 V and a tunable red-shifted emission spectrum related to the bandgap reduction induced by silver doping of the ZnO emitter material. PMID:25990263

  2. In-situ optical transmission electron microscope study of exciton phonon replicas in ZnO nanowires by cathodoluminescence

    SciTech Connect

    Yang, Shize; Tian, Xuezeng; Wang, Lifen; Wei, Jiake; Qi, Kuo; Li, Xiaomin; Xu, Zhi E-mail: xdbai@iphy.ac.cn Wang, Wenlong; Zhao, Jimin; Bai, Xuedong E-mail: xdbai@iphy.ac.cn; Wang, Enge E-mail: xdbai@iphy.ac.cn

    2014-08-18

    The cathodoluminescence spectrum of single zinc oxide (ZnO) nanowires is measured by in-situ optical Transmission Electron Microscope. The coupling between exciton and longitudinal optical phonon is studied. The band edge emission varies for different excitation spots. This effect is attributed to the exciton propagation along the c axis of the nanowire. Contrary to free exciton emission, the phonon replicas are well confined in ZnO nanowire. They travel along the c axis and emit at the end surface. Bending strain increases the relative intensity of second order phonon replicas when excitons travel along the c-axis.

  3. Field emission property of ZnO nanowires prepared by ultrasonic spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Htay, Myo Than; Hashimoto, Yoshio

    2015-08-01

    The field emission property of cold cathode emitters utilizing the ZnO nanowires with various conditions prepared by ultrasonic spray pyrolysis technique was discussed. It is found that the emission current was enhanced in the emitters having higher aspect ratio as well as smaller sheet resistance. Applying of post-annealing process, utilization of additional Mo back electrode in the cathode, and coating of Mo on the ZnO nanowires resulted in the improvement of the emission current and lowering the threshold voltage. A threshold voltage of about 5.5 V/μm to obtain 1.0 μA/cm2 was achieved in the sample prepared at the growth temperatures varying continuously from 250 °C to 300 °C.

  4. Enhanced field emission from ZnO nanowires grown on a silicon nanoporous pillar array

    NASA Astrophysics Data System (ADS)

    Xu, Hai Jun; Chan, Yu Fei; Su, Lei; Li, De Yao; Sun, Xiao Ming

    2010-12-01

    A large scale heterostructure array of ZnO nanowires/silicon nanoporous pillar array (Si-NPA) was prepared by a self-catalytic thermal evaporation and vapor-phase transport method, and an ultrahigh field emission current density of 1.55 mA cm-2 was obtained under an operating electric field of 4.0 V μm-1, with a low turn-on field of 1.65 V μm-1. The enhancement factor calculated according to the Fowler-Nordheim theory was ˜3141. The excellent field emission performance was attributed to the unique structure of ZnO/Si-NPA, especially the formation of ZnO nanowires on regular Si pillar array. Our work indicated that ZnO/Si-NPA might be an ideal candidate cathode of potential applications in flat panel displays and high brightness electron sources.

  5. Integration of ZnO and CuO nanowires into a thermoelectric module

    PubMed Central

    Dalola, Simone; Faglia, Guido; Comini, Elisabetta; Ferroni, Matteo; Soldano, Caterina; Ferrari, Vittorio; Sberveglieri, Giorgio

    2014-01-01

    Summary Zinc oxide (ZnO, n-type) and copper oxide (CuO, p-type) nanowires have been synthesized and preliminarily investigated as innovative materials for the fabrication of a proof-of-concept thermoelectric device. The Seebeck coefficients, electrical conductivity and thermoelectric power factors (TPF) of both semiconductor materials have been determined independently using a custom experimental set-up, leading to results in agreement with available literature with potential improvement. Combining bundles of ZnO and CuO nanowires in a series of five thermocouples on alumina leads to a macroscopic prototype of a planar thermoelectric generator (TEG) unit. This demonstrates the possibility of further integration of metal oxide nanostructures into efficient thermoelectric devices. PMID:24991531

  6. Integration of ZnO and CuO nanowires into a thermoelectric module.

    PubMed

    Zappa, Dario; Dalola, Simone; Faglia, Guido; Comini, Elisabetta; Ferroni, Matteo; Soldano, Caterina; Ferrari, Vittorio; Sberveglieri, Giorgio

    2014-01-01

    Zinc oxide (ZnO, n-type) and copper oxide (CuO, p-type) nanowires have been synthesized and preliminarily investigated as innovative materials for the fabrication of a proof-of-concept thermoelectric device. The Seebeck coefficients, electrical conductivity and thermoelectric power factors (TPF) of both semiconductor materials have been determined independently using a custom experimental set-up, leading to results in agreement with available literature with potential improvement. Combining bundles of ZnO and CuO nanowires in a series of five thermocouples on alumina leads to a macroscopic prototype of a planar thermoelectric generator (TEG) unit. This demonstrates the possibility of further integration of metal oxide nanostructures into efficient thermoelectric devices.

  7. Role of surface chemistry in adhesion between ZnO nanowires and carbon fibers in hybrid composites.

    PubMed

    Ehlert, Gregory J; Galan, Ulises; Sodano, Henry A

    2013-02-01

    Low interface strength is a persistent problem in composite materials and cascades to limit a variety of bulk material properties such as lamina shear strength. Whiskerization has long been pursued as a method to reinforce the interphase and improve both the single fiber interface strength as well as the bulk properties. Recent developments have shown that ZnO nanowire whiskerization can effectively improve the properties of a bulk composite without requiring the high temperatures that previous deposition processes needed. Although the efficacy of a ZnO nanowire interphase has been established, the mechanism for adhesion of the interphase to the fiber has not been identified. Specifically, the addition of the ZnO nanowires to the surface of the fibers requires that the ZnO nanowires have strong chemical adhesion to the fiber surface. This work will create a variety of chemical environments on the surface of the fibers through new and common chemical functionalization procedures and quantify the surface chemistry through X-ray photoelectron spectroscopy. The effect of fiber surface chemistry on the adhesion of the ZnO is assessed through single fiber fragmentation testing. The interface strength is found to strongly correlate with the concentration of ketone groups on the surface of the fibers. Following the experimental observations, liftoff of a ZnO crystal from a graphene surface was simulated with a variety of surface functionalizations. The computational models confirm the preference for ketone groups in promoting adhesion between ZnO and graphite.

  8. Role of ZnO thin film in the vertically aligned growth of ZnO nanorods by chemical bath deposition

    NASA Astrophysics Data System (ADS)

    Son, Nguyen Thanh; Noh, Jin-Seo; Park, Sungho

    2016-08-01

    The effect of ZnO thin film on the growth of ZnO nanorods was investigated. ZnO thin films were sputter-deposited on Si substrate with varying the thickness. ZnO nanorods were grown on the thin film using a chemical bath deposition (CBD) method at 90 °C. The ZnO thin films showed granular structure and vertical roughness on the surface, which facilitated the vertical growth of ZnO nanorods. The average grain size and the surface roughness of ZnO film increased with an increase in film thickness, and this led to the increase in both the average diameter and the average length of vertically grown ZnO nanorods. In particular, it was found that the average diameter of ZnO nanorods was very close to the average grain size of ZnO thin film, confirming the role of ZnO film as a seed layer for the vertical growth of ZnO nanorods. The CBD growth on ZnO seed layers may provide a facile route to engineering vertically aligned ZnO nanorod arrays.

  9. Transmission type flat-panel X-ray source using ZnO nanowire field emitters

    NASA Astrophysics Data System (ADS)

    Chen, Daokun; Song, Xiaomeng; Zhang, Zhipeng; Li, Ziping; She, Juncong; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun

    2015-12-01

    A transmission type flat-panel X-ray source in diode structure was fabricated. Large-scale patterned ZnO nanowires grown on a glass substrate by thermal oxidation were utilized as field emitters, and tungsten thin film coated on silica glass was used as the transmission anode. Uniform distribution of X-ray generation was achieved, which benefited from the uniform electron emission from ZnO nanowires. Self-ballasting effect induced by the intrinsic resistance of ZnO nanowire and decreasing of screening effect caused by patterned emitters account for the uniform emission. Characteristic X-ray peaks of W-L lines and bremsstrahlung X-rays have been observed under anode voltages at a range of 18-20 kV, the latter of which were the dominant X-ray signals. High-resolution X-ray images with spatial resolution less than 25 μm were obtained by the flat-panel X-ray source. The high resolution was attributed to the small divergence angle of the emitted X-rays from the transmission X-ray source.

  10. Wireless Remote Monitoring of Glucose Using a Functionalized ZnO Nanowire Arrays Based Sensor

    PubMed Central

    Ali, Syed M. Usman; Aijazi, Tasuif; Axelsson, Kent; Nur, Omer; Willander, Magnus

    2011-01-01

    This paper presents a prototype wireless remote glucose monitoring system interfaced with a ZnO nanowire arrays-based glucose sensor, glucose oxidase enzyme immobilized onto ZnO nanowires in conjunction with a Nafion® membrane coating, which can be effectively applied for the monitoring of glucose levels in diabetics. Global System for Mobile Communications (GSM) services like General Packet Radio Service (GPRS) and Short Message Service (SMS) have been proven to be logical and cost effective methods for gathering data from remote locations. A communication protocol that facilitates remote data collection using SMS has been utilized for monitoring a patient’s sugar levels. In this study, we demonstrate the remote monitoring of the glucose levels with existing GPRS/GSM network infra-structures using our proposed functionalized ZnO nanowire arrays sensors integrated with standard readily available mobile phones. The data can be used for centralized monitoring and other purposes. Such applications can reduce health care costs and allow caregivers to monitor and support to their patients remotely, especially those located in rural areas. PMID:22164087

  11. Doping control of Cu in pH-tuned hydrothermal growth of ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Lee, Jin-su; Lee, Yong-min; Boo, Jin-Hyo

    2015-11-01

    Un-doped and Cu-doped ZnO nanowires were grown on glass substrates by hydrothermal method. To investigate the effect of pH values on dopant concentration and distribution in the as-grown ZnO nanowires, we carried out hydrothermal process in conjunction with controlling pH values ranging from 5.5 to 7.0. The results show that the disorder and chemical impurity induced lattice distortion are clearly affected by pH values. In Cu 2p3/2 core level, Cu element has a mixed valence state (Cu+, Cu2+). Cu2+ state rather than Cu+ was greatly affected by pH value of solution, resulting in controlled dopant concentration. As such, the dopant concentration is highest at 5.5 of pH, which was confirmed by X-ray diffractometry and micro-Raman spectroscopy. In addition, energy dispersive X-ray spectroscopic elemental mapping indicates the uniform distribution of Cu in ZnO nanowires.

  12. Gallium ion implantation greatly reduces thermal conductivity and enhances electronic one of ZnO nanowires

    SciTech Connect

    Xia, Minggang; Cheng, Zhaofang; Han, Jinyun; Zhang, Shengli; Zheng, Minrui; Sow, Chorng-Haur; Thong, John T. L.; Li, Baowen

    2014-05-15

    The electrical and thermal conductivities are measured for individual zinc oxide (ZnO) nanowires with and without gallium ion (Ga{sup +}) implantation at room temperature. Our results show that Ga{sup +} implantation enhances electrical conductivity by one order of magnitude from 1.01 × 10{sup 3} Ω{sup −1}m{sup −1} to 1.46 × 10{sup 4} Ω{sup −1}m{sup −1} and reduces its thermal conductivity by one order of magnitude from 12.7 Wm{sup −1}K{sup −1} to 1.22 Wm{sup −1}K{sup −1} for ZnO nanowires of 100 nm in diameter. The measured thermal conductivities are in good agreement with those in theoretical simulation. The increase of electrical conductivity origins in electron donor doping by Ga{sup +} implantation and the decrease of thermal conductivity is due to the longitudinal and transverse acoustic phonons scattering by Ga{sup +} point scattering. For pristine ZnO nanowires, the thermal conductivity decreases only two times when its diameter reduces from 100 nm to 46 nm. Therefore, Ga{sup +}-implantation may be a more effective method than diameter reduction in improving thermoelectric performance.

  13. Transmission type flat-panel X-ray source using ZnO nanowire field emitters

    SciTech Connect

    Chen, Daokun; Song, Xiaomeng; Zhang, Zhipeng; Chen, Jun; Li, Ziping; She, Juncong; Deng, Shaozhi; Xu, Ningsheng

    2015-12-14

    A transmission type flat-panel X-ray source in diode structure was fabricated. Large-scale patterned ZnO nanowires grown on a glass substrate by thermal oxidation were utilized as field emitters, and tungsten thin film coated on silica glass was used as the transmission anode. Uniform distribution of X-ray generation was achieved, which benefited from the uniform electron emission from ZnO nanowires. Self-ballasting effect induced by the intrinsic resistance of ZnO nanowire and decreasing of screening effect caused by patterned emitters account for the uniform emission. Characteristic X-ray peaks of W-L lines and bremsstrahlung X-rays have been observed under anode voltages at a range of 18–20 kV, the latter of which were the dominant X-ray signals. High-resolution X-ray images with spatial resolution less than 25 μm were obtained by the flat-panel X-ray source. The high resolution was attributed to the small divergence angle of the emitted X-rays from the transmission X-ray source.

  14. Hierarchically structured nanowires on and nanosticks in ZnO microtubes

    PubMed Central

    Rivaldo-Gómez, C. M.; Cabrera-Pasca, G. A.; Zúñiga, A.; Carbonari, A. W.; Souza, J. A.

    2015-01-01

    We report both coaxial core-shell structured microwires and ZnO microtubes with growth of nanosticks in the inner and nanowires on the outer surface as a novel hierarchical micro/nanoarchitecture. First, a core-shell structure is obtained—the core is formed by metallic Zn and the semiconducting shell is comprised by a thin oxide layer covered with a high density of nanowires. Such Zn/ZnO core-shell array showed magnetoresistance effect. It is suggested that magnetic moments in the nanostructured shell superimposes to the external magnetic field enhancing the MR effect. Second, microtubes decorated with nanowires on the external surface are obtained. In an intermediate stage, a hierarchical morphology comprised of discrete nanosticks in the inner surface of the microtube has been found. Hyperfine interaction measurements disclosed the presence of confined metallic Zn regions at the interface between linked ZnO grains forming a chain and a ZnO thicker layer. Surprisingly, the metallic clusters form highly textured thin flat regions oriented parallel to the surface of the microtube as revealed by the electrical field gradient direction. The driving force to grow the internal nanosticks has been ascribed to stress-induced migration of Zn ions due to compressive stress caused by the presence of these confined regions. PMID:26456527

  15. [101̅0] oriented multichannel ZnO nanowire arrays with enhanced optoelectronic device performance.

    PubMed

    He, Dongqing; Sheng, Xia; Yang, Jie; Chen, Liping; Zhu, Kai; Feng, Xinjian

    2014-12-01

    Crystallographic orientation and microstructure of metal oxide nanomaterials have great impact on their properties and applications. Here, we report [101̅0] oriented ZnO nanowire (NW) arrays with a multichannel mesostructure. The NW has a preferential growth of low energy (101̅0) crystal plane and exhibits 2-3 orders of magnitude faster electron transport rate than that in nanoparticle (NP) films. Furthermore, the surface area of the as-prepared NW arrays is about 5 times larger than that of conventional NW arrays with similar thickness. These lead to the highest power conversion efficiency of ZnO NW array-based sensitized solar cells. We anticipate that the unique crystallographic orientation and mesostructure will endow ZnO NW arrays new properties and expand their application fields.

  16. Effects of Oxygen Vacancy on Optical and Electrical Properties of ZnO Bulks and Nanowires

    NASA Astrophysics Data System (ADS)

    Yu, Xiao-Xia; Zheng, Hong-Mei; Fang, Xiao-Yong; Jin, Hai-Bo; Cao, Mao-Sheng

    2014-11-01

    Based on the generalized gradient approximation (GGA) in density functional theory (DFT) and using the first-principle plane wave ultrasoft pseudopotential method, we construct and optimize the structures of intrinsic and oxygen vacancy (VO) ZnO bulks and nanowires (NWs) in the Castep module. Moreover, the calculation of band structures and the optical properties are carried out. The calculated results exhibit that the oxygen vacancy exerts a more significant influence on the electronic structures of the ZnO bulks instead of the NWs. What is more, the influences of the VO on the optical properties are mainly embodied in the ultraviolet region, and the main optical parameters of ZnO bulks and NWs with VO are anisotropic.

  17. MOF-Based Membrane Encapsulated ZnO Nanowires for Enhanced Gas Sensor Selectivity.

    PubMed

    Drobek, Martin; Kim, Jae-Hun; Bechelany, Mikhael; Vallicari, Cyril; Julbe, Anne; Kim, Sang Sub

    2016-04-01

    Gas sensors are of a great interest for applications including toxic or explosive gases detection in both in-house and industrial environments, air quality monitoring, medical diagnostics, or control of food/cosmetic properties. In the area of semiconductor metal oxides (SMOs)-based sensors, a lot of effort has been devoted to improve the sensing characteristics. In this work, we report on a general methodology for improving the selectivity of SMOx nanowires sensors, based on the coverage of ZnO nanowires with a thin ZIF-8 molecular sieve membrane. The optimized ZnO@ZIF-8-based nanocomposite sensor shows markedly selective response to H2 in comparison with the pristine ZnO nanowires sensor, while showing the negligible sensing response to C7H8 and C6H6. This original MOF-membrane encapsulation strategy applied to nanowires sensor architecture pave the way for other complex 3D architectures and various types of applications requiring either gas or ion selectivity, such as biosensors, photo(catalysts), and electrodes. PMID:27003470

  18. MOF-Based Membrane Encapsulated ZnO Nanowires for Enhanced Gas Sensor Selectivity.

    PubMed

    Drobek, Martin; Kim, Jae-Hun; Bechelany, Mikhael; Vallicari, Cyril; Julbe, Anne; Kim, Sang Sub

    2016-04-01

    Gas sensors are of a great interest for applications including toxic or explosive gases detection in both in-house and industrial environments, air quality monitoring, medical diagnostics, or control of food/cosmetic properties. In the area of semiconductor metal oxides (SMOs)-based sensors, a lot of effort has been devoted to improve the sensing characteristics. In this work, we report on a general methodology for improving the selectivity of SMOx nanowires sensors, based on the coverage of ZnO nanowires with a thin ZIF-8 molecular sieve membrane. The optimized ZnO@ZIF-8-based nanocomposite sensor shows markedly selective response to H2 in comparison with the pristine ZnO nanowires sensor, while showing the negligible sensing response to C7H8 and C6H6. This original MOF-membrane encapsulation strategy applied to nanowires sensor architecture pave the way for other complex 3D architectures and various types of applications requiring either gas or ion selectivity, such as biosensors, photo(catalysts), and electrodes.

  19. The Modulation of Optical Property and its Correlation with Microstructures of ZnO Nanowires

    PubMed Central

    2009-01-01

    ZnO nanowires with both good crystallinity and oxygen vacancies defects were synthesized by thermal oxidation of Zn substrate pretreated in concentrated sulfuric acid under the air atmosphere, Ar- and air-mixed gas stream. The photoluminescence spectra reveal that only near-band-edge (NBE) emission peak was observed for the sample grown in the air atmosphere; the broad blue–green and the red-shifted NBE emission peaks were observed for the sample grown in the mixed gas stream, indicating that the sample grown in the mixed gas stream has a defective structure and its optical properties can be modulated by controlling its structure. The high-resolution transmission electron microscope and the corresponding structural simulation confirm that the oxygen vacancies exist in the crystal of the nanowires grown in the mixed gas stream. The ZnO nanowires with oxygen vacancies defects exhibit better photocatalytic activity than the nanowires with good crystallinity. The photocatalytic process obeys the rules of first-order kinetic reaction, and the rate constants were calculated. PMID:20596485

  20. Flow-enabled self-assembly of large-scale aligned nanowires.

    PubMed

    Li, Bo; Zhang, Chuchu; Jiang, Beibei; Han, Wei; Lin, Zhiqun

    2015-03-27

    One-dimensional nanowires enable the realization of optical and electronic nanodevices that may find applications in energy conversion and storage systems. Herein, large-scale aligned DNA nanowires were crafted by flow-enabled self-assembly (FESA). The highly oriented and continuous DNA nanowires were then capitalized on either as a template to form metallic nanowires by exposing DNA nanowires that had been preloaded with metal salts to an oxygen plasma or as a scaffold to direct the positioning and alignment of metal nanoparticles and nanorods. The FESA strategy is simple and easy to implement and thus a promising new method for the low-cost synthesis of large-scale one-dimensional nanostructures for nanodevices.

  1. Fabrication of ZnO Nanowires Arrays by Anodization and High-Vacuum Die Casting Technique, and Their Piezoelectric Properties.

    PubMed

    Kuo, Chin-Guo; Chang, Ho; Wang, Jian-Hao

    2016-03-24

    In this investigation, anodic aluminum oxide (AAO) with arrayed and regularly arranged nanopores is used as a template in the high-vacuum die casting of molten zinc metal (Zn) into the nanopores. The proposed technique yields arrayed Zn nanowires with an aspect ratio of over 600. After annealing, arrayed zinc oxide (ZnO) nanowires are obtained. Varying the anodizing time yields AAO templates with thicknesses of approximately 50 μm, 60 μm, and 70 μm that can be used in the fabrication of nanowires of three lengths with high aspect ratios. Experimental results reveal that a longer nanowire generates a greater measured piezoelectric current. The ZnO nanowires that are fabricated using an alumina template are anodized for 7 h and produce higher piezoelectric current of up to 69 pA.

  2. Fabrication of ZnO Nanowires Arrays by Anodization and High-Vacuum Die Casting Technique, and Their Piezoelectric Properties.

    PubMed

    Kuo, Chin-Guo; Chang, Ho; Wang, Jian-Hao

    2016-01-01

    In this investigation, anodic aluminum oxide (AAO) with arrayed and regularly arranged nanopores is used as a template in the high-vacuum die casting of molten zinc metal (Zn) into the nanopores. The proposed technique yields arrayed Zn nanowires with an aspect ratio of over 600. After annealing, arrayed zinc oxide (ZnO) nanowires are obtained. Varying the anodizing time yields AAO templates with thicknesses of approximately 50 μm, 60 μm, and 70 μm that can be used in the fabrication of nanowires of three lengths with high aspect ratios. Experimental results reveal that a longer nanowire generates a greater measured piezoelectric current. The ZnO nanowires that are fabricated using an alumina template are anodized for 7 h and produce higher piezoelectric current of up to 69 pA. PMID:27023546

  3. Fabrication of ZnO Nanowires Arrays by Anodization and High-Vacuum Die Casting Technique, and Their Piezoelectric Properties

    PubMed Central

    Kuo, Chin-Guo; Chang, Ho; Wang, Jian-Hao

    2016-01-01

    In this investigation, anodic aluminum oxide (AAO) with arrayed and regularly arranged nanopores is used as a template in the high-vacuum die casting of molten zinc metal (Zn) into the nanopores. The proposed technique yields arrayed Zn nanowires with an aspect ratio of over 600. After annealing, arrayed zinc oxide (ZnO) nanowires are obtained. Varying the anodizing time yields AAO templates with thicknesses of approximately 50 μm, 60 μm, and 70 μm that can be used in the fabrication of nanowires of three lengths with high aspect ratios. Experimental results reveal that a longer nanowire generates a greater measured piezoelectric current. The ZnO nanowires that are fabricated using an alumina template are anodized for 7 h and produce higher piezoelectric current of up to 69 pA. PMID:27023546

  4. Aligned epitaxial SnO2 nanowires on sapphire: growth and device applications.

    PubMed

    Wang, Xiaoli; Aroonyadet, Noppadol; Zhang, Yuzheng; Mecklenburg, Matthew; Fang, Xin; Chen, Haitian; Goo, Edward; Zhou, Chongwu

    2014-06-11

    Semiconducting SnO2 nanowires have been used to demonstrate high-quality field-effect transistors, optically transparent devices, photodetectors, and gas sensors. However, controllable assembly of rutile SnO2 nanowires is necessary for scalable and practical device applications. Here, we demonstrate aligned, planar SnO2 nanowires grown on A-plane, M-plane, and R-plane sapphire substrates. These parallel nanowires can reach 100 μm in length with sufficient density to be patterned photolithographically for field-effect transistors and sensor devices. As proof-of-concept, we show that transistors made this way can achieve on/off current ratios on the order of 10(6), mobilities around 71.68 cm(2)/V·s, and sufficiently high currents to drive external organic light-emitting diode displays. Furthermore, the aligned SnO2 nanowire devices are shown to be photosensitive to UV light with the capability to distinguish between 254 and 365 nm wavelengths. Their alignment is advantageous for polarized UV light detection; we have measured a polarization ratio of photoconductance (σ) of 0.3. Lastly, we show that the nanowires can detect NO2 at a concentration of 0.2 ppb, making them a scalable, ultrasensitive gas sensing technology. Aligned SnO2 nanowires offer a straightforward method to fabricate scalable SnO2 nanodevices for a variety of future electronic applications.

  5. MOCVD growth of vertically aligned InGaN nanowires

    NASA Astrophysics Data System (ADS)

    Kuo, H. C.; Su Oh, Tae; Ku, P.-C.

    2013-05-01

    In this work, we report the growth of vertically aligned bulk InGaN nanowires (NWs) on r-plane sapphire substrate by metal organic chemical vapor deposition (MOCVD). Through the optimization process of growth conditions, such as growth temperature and pressure, we obtained high density InGaN NWs consisting of one (0001) polar- and two equivalent {1101} semi-polar planes. We have shown the highest InGaN NWs wire density of 8×108 cm-2,with an average diameter of 300 nm and a length of 2 μm. From results of photoluminescence (PL) at 30 K and 300 K, we observed the intense and broad emission peak from InGaN NWs at around 595 nm, and confirmed that the luminescence could be tuned from 580 nm to 660 nm by controlling the indium flow (TMIn) rate. Our results indicate that MOCVD-grown InGaN NWs can be effective absorbers of the blue-green range of solar spectrum and may be one of the good candidates for high efficiency photovoltaic devices targeting at blue-green photons.

  6. Fabrication and optical simulation of vertically aligned silicon nanowires

    NASA Astrophysics Data System (ADS)

    Hossain, M. K.; Salhi, B.; Mukhaimer, A. W.; Al-Sulaiman, F. A.

    2016-10-01

    Silicon nanowires (Si-NWs) have been considered widely as a perfect light absorber with strong evidence of enhanced optical functionalities. Here we report finite-difference time-domain simulations for Si-NWs to elucidate the key factors that determine enhanced light absorption, energy flow behavior, electric field profile, and excitons generation rate distribution. To avoid further complexity, a single Si-NW of cylindrical shape was modeled on c-Si and optimized to elucidate the aforementioned characteristics. Light absorption and energy flow distribution confirmed that Si-NW facilitates to confine photon absorption of several orders of enhancement whereas the energy flow is also distributed along the wire itself. With reference to electric field and excitons generation distribution it was revealed that Si-NW possesses the sites of strongest field distributions compared to those of flat silicon wafer. To realize the potential of Si-NWs-based thin film solar cell, a simple process was adopted to acquire vertically aligned Si-NWs grown on c-Si wafer. Further topographic characterizations were conducted through scanning electron microscope and tunneling electron microscope-coupled energy-dispersive spectroscopy.

  7. Thermal Conduction in Vertically Aligned Copper Nanowire Arrays and Composites.

    PubMed

    Barako, Michael T; Roy-Panzer, Shilpi; English, Timothy S; Kodama, Takashi; Asheghi, Mehdi; Kenny, Thomas W; Goodson, Kenneth E

    2015-09-01

    The ability to efficiently and reliably transfer heat between sources and sinks is often a bottleneck in the thermal management of modern energy conversion technologies ranging from microelectronics to thermoelectric power generation. These interfaces contribute parasitic thermal resistances that reduce device performance and are subjected to thermomechanical stresses that degrade device lifetime. Dense arrays of vertically aligned metal nanowires (NWs) offer the unique combination of thermal conductance from the constituent metal and mechanical compliance from the high aspect ratio geometry to increase interfacial heat transfer and device reliability. In the present work, we synthesize copper NW arrays directly onto substrates via templated electrodeposition and extend this technique through the use of a sacrificial overplating layer to achieve improved uniformity. Furthermore, we infiltrate the array with an organic phase change material and demonstrate the preservation of thermal properties. We use the 3ω method to measure the axial thermal conductivity of freestanding copper NW arrays to be as high as 70 W m(-1) K(-1), which is more than an order of magnitude larger than most commercial interface materials and enhanced-conductivity nanocomposites reported in the literature. These arrays are highly anisotropic, and the lateral thermal conductivity is found to be only 1-2 W m(-1) K(-1). We use these measured properties to elucidate the governing array-scale transport mechanisms, which include the effects of morphology and energy carrier scattering from size effects and grain boundaries. PMID:26284489

  8. Thermal Conduction in Vertically Aligned Copper Nanowire Arrays and Composites.

    PubMed

    Barako, Michael T; Roy-Panzer, Shilpi; English, Timothy S; Kodama, Takashi; Asheghi, Mehdi; Kenny, Thomas W; Goodson, Kenneth E

    2015-09-01

    The ability to efficiently and reliably transfer heat between sources and sinks is often a bottleneck in the thermal management of modern energy conversion technologies ranging from microelectronics to thermoelectric power generation. These interfaces contribute parasitic thermal resistances that reduce device performance and are subjected to thermomechanical stresses that degrade device lifetime. Dense arrays of vertically aligned metal nanowires (NWs) offer the unique combination of thermal conductance from the constituent metal and mechanical compliance from the high aspect ratio geometry to increase interfacial heat transfer and device reliability. In the present work, we synthesize copper NW arrays directly onto substrates via templated electrodeposition and extend this technique through the use of a sacrificial overplating layer to achieve improved uniformity. Furthermore, we infiltrate the array with an organic phase change material and demonstrate the preservation of thermal properties. We use the 3ω method to measure the axial thermal conductivity of freestanding copper NW arrays to be as high as 70 W m(-1) K(-1), which is more than an order of magnitude larger than most commercial interface materials and enhanced-conductivity nanocomposites reported in the literature. These arrays are highly anisotropic, and the lateral thermal conductivity is found to be only 1-2 W m(-1) K(-1). We use these measured properties to elucidate the governing array-scale transport mechanisms, which include the effects of morphology and energy carrier scattering from size effects and grain boundaries.

  9. Developing Seedless Growth of ZnO Micro/Nanowire Arrays towards ZnO/FeS2/CuI P-I-N Photodiode Application

    PubMed Central

    Yang, Zhi; Wang, Minqiang; Shukla, Sudhanshu; Zhu, Yue; Deng, Jianping; Ge, Hu; Wang, Xingzhi; Xiong, Qihua

    2015-01-01

    A seedless hydrothermal method is developed to grow high density and vertically aligned ZnO micro/nanowire arrays with low defect density on metal films under the saturated nutrition solution. In particular, the mechanism of seedless method is discussed here. A buffer layer can be confirmed by transmission electron microscopy (TEM), which may release the elastic strain between ZnO and substrate to achieve this highly mismatched heteroepitaxial structures. Based on ZnO micro/nanowire arrays with excellent wettability surface, we prepared ZnO-FeS2-CuI p-i-n photodiode by all-solution processed method with the high rectifying ratio of 197 at ±1 V. Under AM 1.5 condition, the Jsc of 0.5 mA/cm2, on-off current ratio of 371 and fast photoresponse at zero bias voltage were obtained. This good performance comes from excellent collection ability of photogenerated electrons and holes due to the increased depletion layer width for p-i-n structure. Finally, the high responsivity around 900 nm shows the potential as near infrared photodetectors applications. PMID:26077658

  10. Developing Seedless Growth of ZnO Micro/Nanowire Arrays towards ZnO/FeS2/CuI P-I-N Photodiode Application

    NASA Astrophysics Data System (ADS)

    Yang, Zhi; Wang, Minqiang; Shukla, Sudhanshu; Zhu, Yue; Deng, Jianping; Ge, Hu; Wang, Xingzhi; Xiong, Qihua

    2015-06-01

    A seedless hydrothermal method is developed to grow high density and vertically aligned ZnO micro/nanowire arrays with low defect density on metal films under the saturated nutrition solution. In particular, the mechanism of seedless method is discussed here. A buffer layer can be confirmed by transmission electron microscopy (TEM), which may release the elastic strain between ZnO and substrate to achieve this highly mismatched heteroepitaxial structures. Based on ZnO micro/nanowire arrays with excellent wettability surface, we prepared ZnO-FeS2-CuI p-i-n photodiode by all-solution processed method with the high rectifying ratio of 197 at ±1 V. Under AM 1.5 condition, the Jsc of 0.5 mA/cm2, on-off current ratio of 371 and fast photoresponse at zero bias voltage were obtained. This good performance comes from excellent collection ability of photogenerated electrons and holes due to the increased depletion layer width for p-i-n structure. Finally, the high responsivity around 900 nm shows the potential as near infrared photodetectors applications.

  11. A fast and effective approach for reversible wetting-dewetting transitions on ZnO nanowires

    PubMed Central

    Yadav, Kavita; Mehta, B. R.; Bhattacharya, Saswata; Singh, J. P.

    2016-01-01

    Here, we demonstrate a facile approach for the preparation of ZnO nanowires (NWs) with tunable surface wettability that can be manipulated reversibly in a controlled manner from a superhydrophilic state to a superhydrophobic state. The as-synthesized ZnO NWs obtained by a chemical vapor deposition method are superhydrophilic with a contact angle (CA) value of ~0°. After H2 gas annealing at 300 °C for 90 minutes, ZnO NWs display superhydrophobic behavior with a roll-off angle less than 5°. However, O2 gas annealing converts these superhydrophobic ZnO NWs into a superhydrophilic state. For switching from superhydrophobic to superhydrophilic state and vice versa in cyclic manner, H2 and O2 gas annealing treatment was used, respectively. A model based on density functional theory indicates that the oxygen-related defects are responsible for CA switching. The water resistant properties of the ZnO NWs coating is found to be durable and can be applied to a variety of substrates including glass, metals, semiconductors, paper and even flexible polymers. PMID:27713536

  12. Plasmon-mediated photocatalytic activity of wet-chemically prepared ZnO nanowire arrays.

    PubMed

    Dao, Thang Duy; Han, Gui; Arai, Nono; Nabatame, Toshihide; Wada, Yoshiki; Hoang, Chung Vu; Aono, Masakazu; Nagao, Tadaaki

    2015-03-21

    We report on measurements and simulations of the efficient sunlight-driven and visible-active photocatalysts composed of plasmonic metal nanoparticles and ZnO nanowire (NW) arrays fabricated via an all-wet-chemical route. Because of the coupling between the ZnO dielectric response and the excitation of the Ag or Au nanoparticles, efficient electronic excitation can be induced in the vicinity of the metal-ZnO interfaces because optically-excited plasmonic particles can not only concentrate the electromagnetic field at the ZnO/particle interface, but also act as efficient sources of plasmonic hot electrons to be injected into the conduction band of the ZnO catalyst. The catalytic activities of the fabricated ZnO NWs are examined by photodegradation of methylene blue and by photocurrent measurements in a photovoltaic configuration. Numerical electromagnetic simulations were used to understand the behavior of the light on the nanometer-scale to clarify the catalytic enhancement mechanisms in both the ultraviolet (UV) and visible (VIS) regions. In addition, simulation results indicated that a near-surface normal but slightly tilted ZnO NW array geometry would provide an increased optical path length and enhanced multiple scattering and absorption processes arising from the localized surface plasmon resonances of the nanoparticles. The results obtained here clarify the role of the plasmon resonance and provide us with useful knowledge for the development of metal-oxide nano-hybrid materials for solar energy conversion. PMID:25700130

  13. A Au-functionalized ZnO nanowire gas sensor for detection of benzene and toluene.

    PubMed

    Wang, Liwei; Wang, Shurong; Xu, Mijuan; Hu, Xiaojing; Zhang, Hongxin; Wang, Yanshuang; Huang, Weiping

    2013-10-28

    A novel sensing hybrid-material of Au nanoparticles (Au NPs)-functionalized ZnO nanowires (Au-ZnO NWs) was successfully synthesized by a two-stage solution process. First, ZnO NWs were fabricated via a low-temperature one-pot hydrothermal method with SDSN introduced as a structure-directing agent. Afterward, the as-prepared ZnO NWs were used as supports to load Au NPs with small sizes via precipitating HAuCl4 aqueous solution with ammonia. The obtained samples were characterized by means of XRD, SEM, TEM and EDX. Both pristine and Au-ZnO NWs were practically applied as gas sensors to compare the effect of Au NPs on the sensing performances and the obtained results demonstrated that after functionalization by catalytic Au NPs, the hybrid sensor exhibited not only faster response and recovery speeds but also a higher response to benzene and toluene than the pristine ZnO sensor at 340 °C, especially showing high selectivity and long-term stability for low concentration toluene, which is rarely reported with this method, indicating its original sensor application in detecting benzene and toluene. To interpret the enhanced gas sensing mechanism, the strong spillover effect of the Au NPs and the increased Schottky barriers caused by the electronic interaction between Au NPs and ZnO NW support are believed to contribute to the improved sensor performance.

  14. A fast and effective approach for reversible wetting-dewetting transitions on ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Yadav, Kavita; Mehta, B. R.; Bhattacharya, Saswata; Singh, J. P.

    2016-10-01

    Here, we demonstrate a facile approach for the preparation of ZnO nanowires (NWs) with tunable surface wettability that can be manipulated reversibly in a controlled manner from a superhydrophilic state to a superhydrophobic state. The as-synthesized ZnO NWs obtained by a chemical vapor deposition method are superhydrophilic with a contact angle (CA) value of ~0°. After H2 gas annealing at 300 °C for 90 minutes, ZnO NWs display superhydrophobic behavior with a roll-off angle less than 5°. However, O2 gas annealing converts these superhydrophobic ZnO NWs into a superhydrophilic state. For switching from superhydrophobic to superhydrophilic state and vice versa in cyclic manner, H2 and O2 gas annealing treatment was used, respectively. A model based on density functional theory indicates that the oxygen-related defects are responsible for CA switching. The water resistant properties of the ZnO NWs coating is found to be durable and can be applied to a variety of substrates including glass, metals, semiconductors, paper and even flexible polymers.

  15. Electro-physical characterization of individual and arrays of ZnO nanowires

    SciTech Connect

    Mallampati, Bhargav; Singh, Abhay; Philipose, U.; Shik, Alex; Ruda, Harry E.

    2015-07-21

    Capacitance measurements were made on an array of parallel ZnO nanowires embedded in a polymer matrix and provided with two electrodes perpendicular to the nanowires. The capacitance monotonically increased, and saturated at large negative (depleting) and large positive (accumulating) voltages. A qualitative explanation for this behavior is presented, taking into account specific features of quasi-one-dimensional screening. The increasing or decreasing character of the capacitance-voltage characteristics were determined by the conductivity type of the nanowires, which in our case was n-type. A dispersion of the experimental capacitance was observed over the entire frequency range of 1 kHz to 5 MHz. This phenomenon is explained by the slow discharge of the nanowires through the thin dielectric layer that separates them from the top electrode. Separate measurements on individual identical nanowires in a field effect transistor configuration yielded an electron concentration and mobility of approximately 10{sup 17 }cm{sup −3} and 150 cm{sup 2}/Vs, respectively, at room temperature.

  16. Scalable alignment and transfer of nanowires in a Spinning Langmuir Film.

    PubMed

    Zhu, Ren; Lai, Yicong; Nguyen, Vu; Yang, Rusen

    2014-10-21

    Many nanomaterial-based integrated nanosystems require the assembly of nanowires and nanotubes into ordered arrays. A generic alignment method should be simple and fast for the proof-of-concept study by a researcher, and low-cost and scalable for mass production in industries. Here we have developed a novel Spinning-Langmuir-Film technique to fulfill both requirements. We used surfactant-enhanced shear flow to align inorganic and organic nanowires, which could be easily transferred to other substrates and ready for device fabrication in less than 20 minutes. The aligned nanowire areal density can be controlled in a wide range from 16/mm(-2) to 258/mm(-2), through the compression of the film. The surface surfactant layer significantly influences the quality of alignment and has been investigated in detail. PMID:25177924

  17. Low-Frequency Self-Powered Footstep Sensor Based on ZnO Nanowires on Paper Substrate.

    PubMed

    Nour, E S; Bondarevs, A; Huss, P; Sandberg, M; Gong, S; Willander, M; Nur, O

    2016-12-01

    In this work, we design and fabricate a wireless system with the main operating device based on zinc oxide (ZnO) nanowires. The main operating device is based on piezoelectric nanogenerator (NG) achieved using ZnO nanowires grown hydrothermally on paper substrate. The fabricated NG is capable of harvesting ambient mechanical energy from various kinds of human motion, e.g., footsteps. The harvested electric output has been used to serve as a self-powered pressure sensor. Without any storage device, the signal from a single footstep has successfully triggered a wireless sensor node circuit. This study demonstrates the feasibility of using ZnO nanowire piezoelectric NG as a low-frequency self-powered sensor, with potential applications in wireless sensor networks. PMID:27000024

  18. Low-Frequency Self-Powered Footstep Sensor Based on ZnO Nanowires on Paper Substrate

    NASA Astrophysics Data System (ADS)

    Nour, E. S.; Bondarevs, A.; Huss, P.; Sandberg, M.; Gong, S.; Willander, M.; Nur, O.

    2016-03-01

    In this work, we design and fabricate a wireless system with the main operating device based on zinc oxide (ZnO) nanowires. The main operating device is based on piezoelectric nanogenerator (NG) achieved using ZnO nanowires grown hydrothermally on paper substrate. The fabricated NG is capable of harvesting ambient mechanical energy from various kinds of human motion, e.g., footsteps. The harvested electric output has been used to serve as a self-powered pressure sensor. Without any storage device, the signal from a single footstep has successfully triggered a wireless sensor node circuit. This study demonstrates the feasibility of using ZnO nanowire piezoelectric NG as a low-frequency self-powered sensor, with potential applications in wireless sensor networks.

  19. Low-Frequency Self-Powered Footstep Sensor Based on ZnO Nanowires on Paper Substrate.

    PubMed

    Nour, E S; Bondarevs, A; Huss, P; Sandberg, M; Gong, S; Willander, M; Nur, O

    2016-12-01

    In this work, we design and fabricate a wireless system with the main operating device based on zinc oxide (ZnO) nanowires. The main operating device is based on piezoelectric nanogenerator (NG) achieved using ZnO nanowires grown hydrothermally on paper substrate. The fabricated NG is capable of harvesting ambient mechanical energy from various kinds of human motion, e.g., footsteps. The harvested electric output has been used to serve as a self-powered pressure sensor. Without any storage device, the signal from a single footstep has successfully triggered a wireless sensor node circuit. This study demonstrates the feasibility of using ZnO nanowire piezoelectric NG as a low-frequency self-powered sensor, with potential applications in wireless sensor networks.

  20. The influence of local heating by nonlinear pulsed laser excitation on the transmission characteristics of a ZnO nanowire waveguide.

    PubMed

    Voss, Tobias; Svacha, Geoffry T; Mazur, Eric; Müller, Sven; Ronning, Carsten

    2009-03-01

    We perform a transmission experiment on a ZnO nanowire waveguide to study its transmission characteristics under nonlinear femtosecond-pulse excitation. We find that both the second harmonic and the photoluminescence couple into low-order waveguide modes of the nanowires but with distinctly different efficiencies. We measure the transmission spectrum of a single ZnO nanowire waveguide for near-UV light generated by interband recombination processes. The transmission spectrum allows us to determine the absorption edge of the excited nanowire and to study the temperature profile of the nanowire under femtosecond-pulse excitation.

  1. Characterization and modeling of a ZnO nanowire ultraviolet photodetector with graphene transparent contact

    SciTech Connect

    Zhang, H.; Lavenus, P.; Julien, F. H.; Tchernycheva, M.; Babichev, A. V.; Jacopin, G.; Egorov, A. Yu.

    2013-12-21

    We report the demonstration of a ZnO nanowire ultraviolet photodetector with a top transparent electrode made of a few-layered graphene sheet. The nanowires have been synthesized using a low-cost electrodeposition method. The detector is shown to be visible-blind and to present a responsivity larger than 10{sup 4} A/W in the near ultraviolet range thanks to a high photoconductive gain in ZnO nanowires. The device exhibits a peak responsivity at 370 nm wavelength and shows a sub bandgap response down to 415 nm explained by an Urbach tail with a characteristic energy of 83 meV. The temporal response of the detector and the power dependence are discussed. A model of the photoconductive mechanism is proposed showing that the main process responsible for the photoconductive gain is the modulation of the conducting surface due to the variation of the surface depletion layer and not the reduction of recombination efficiency stemming from the electron-hole spatial separation. The gain is predicted to decrease at high incident power due to the flattening of the lateral band bending in agreement with experimental data.

  2. Shadow mask assisted direct growth of ZnO nanowires as a sensing medium for surface acoustic wave devices using a thermal evaporation method

    NASA Astrophysics Data System (ADS)

    Achath Mohanan, Ajay; Parthiban, R.; Ramakrishnan, N.

    2016-02-01

    Zinc oxide (ZnO) nanowires were directly synthesized on high temperature stable one-port surface acoustic wave (SAW) resonators made of LiNbO3 substrate and Pt/Ti electrodes using a self-seeding catalyst-free thermal evaporation method. To enhance post-growth device functionality, one half of an SAW resonator was masked along the interdigital transducer aperture length during the nanowire growth process using a stainless steel shadow mask, while the other half was used as the ZnO nanowire growth site. This was achieved by employing a precisely machined stainless steel sleeve to house the chip and mask in the reaction chamber during the nanowire growth process. The ZnO nanowire integrated SAW resonator exhibited ultraviolet radiation sensing abilities which indicated that the ZnO nanowires grown on the SAW device were able to interact with SAW propagation on the substrate even after the device was exposed to extremely harsh conditions during the nanowire growth process. The use of a thermal evaporation method, instead of the conventionally used solution-grown method for direct growth of ZnO nanowires on SAW devices, paves the way for future methods aimed at the fabrication of highly sensitive ZnO nanowire-LiNbO3 based SAW sensors utilizing coupled resonance phenomenon at the nanoscale.

  3. Growth and Properties of Self-Aligned MgO Nanowires

    NASA Astrophysics Data System (ADS)

    Cimpoiasu, Elena; Klie, Robert F.; Munden, Ryan A.; Reed, Mark A.

    2008-03-01

    A simple VLS route was used to produce self-aligned MgO nanowires on both polished crystalline (c-axis sapphire) and ceramic (alumina) surfaces. Growth on alumina produces vertically-aligned, very thin nanowires, indicating enhanced growth at the liquid-solid interface. Growth on polished sapphire results in faceted MgO nanowires which are perpendicular to the r-plane of sapphire and show evidence of competing vapor-solid growth mechanism. The difference in the morphology and structure of the nanowires grown using the two different substrates clearly illustrates the affect of substrate on the growth process. This work was partially supported by DARPA, by the Department of Homeland Security, and by the National Science Foundation.

  4. Hydrothermal Synthesis of ZnO Structures Formed by High-Aspect-Ratio Nanowires for Acetone Detection.

    PubMed

    Cao, Zhen; Wang, Yong; Li, Zhanguo; Yu, Naisen

    2016-12-01

    Snowflake-like ZnO structures originating from self-assembled nanowires were prepared by a low-temperature aqueous solution method. The as-grown hierarchical ZnO structures were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM). The results showed that the snowflake-like ZnO structures were composed of high-aspect-ratio nanowires. Furthermore, gas-sensing properties to various testing gases of 10 and 50 ppm were measured, which confirms that the ZnO structures were of good selectivity and response to acetone and could serve for acetone sensor to detect low-concentration acetone. PMID:27460595

  5. Tunable transport properties of n-type ZnO nanowires by Ti plasma immersion ion implantation

    SciTech Connect

    Liao, L.; Zhang, Z.; Yan, B.; Li, G. P.; Wu, T.; Shen, Z. X.; Yu, T.; Yang, Y.; Cao, H. T.; Chen, L. L.; Tay, B. K.; Sun, X. W.

    2008-10-01

    Single-crystalline, transparent conducting ZnO nanowires were obtained simply by Ti plasma immersion ion implantation (PIII). Electrical transport characterizations demonstrate that the n-type conduction of ZnO nanowire could be tuned by appropriate Ti-PIII. When the energy of PIII is increased, the resistivity of ZnO decreases from 4x10{sup 2} to 3.3x10{sup -3} {omega} cm, indicating a semiconductor-metal transition. The failure-current densities of the metallic ZnO could be up to 2.75x10{sup 7} A/cm{sup 2}. Therefore, this facile method may provide an inexpensive alternative to tin doped indium oxide as transparent conducting oxide materials.

  6. Effect of Sb-doping on the morphology and dielectric properties of chrysanthemum-like ZnO nanowire clusters

    NASA Astrophysics Data System (ADS)

    Yan, Jun-Feng; You, Tian-Gui; Zhang, Zhi-Yong; Tian, Jiang-Xiao; Yun, Jiang-Ni; Zhao, Wu

    2012-09-01

    Chrysanthemum-like ZnO nanowire clusters with different Sb-doping concentrations were prepared using a hydrothermal process. The microstructures, morphologies, and dielectric properties of the as-prepared products were characterized by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), field emission environment scanning electron microscope (FEESEM), and microwave vector network analyzer respectively. The results indicate that the as-prepared products are Sb-doped ZnO single crystallines with a hexagonal wurtzite structure, the flower bud saturation degree Fd is obviously different from that of the pure ZnO nanowire clusters, the good dielectric loss property is found in Sb-doped ZnO products with low density, and the dielectric loss tangent tanδe increases with the increase of the Sb-doping concentration in a certain concentration range.

  7. Hydrothermal Synthesis of ZnO Structures Formed by High-Aspect-Ratio Nanowires for Acetone Detection.

    PubMed

    Cao, Zhen; Wang, Yong; Li, Zhanguo; Yu, Naisen

    2016-12-01

    Snowflake-like ZnO structures originating from self-assembled nanowires were prepared by a low-temperature aqueous solution method. The as-grown hierarchical ZnO structures were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM). The results showed that the snowflake-like ZnO structures were composed of high-aspect-ratio nanowires. Furthermore, gas-sensing properties to various testing gases of 10 and 50 ppm were measured, which confirms that the ZnO structures were of good selectivity and response to acetone and could serve for acetone sensor to detect low-concentration acetone.

  8. Hybrid ZnO nanowire/a-Si:H thin-film radial junction solar cells using nanoparticle front contacts

    SciTech Connect

    Pathirane, M. Iheanacho, B.; Lee, C.-H.; Wong, W. S.; Tamang, A.; Knipp, D.; Lujan, R.

    2015-10-05

    Hydrothermally synthesized disordered ZnO nanowires were conformally coated with a-Si:H thin-films to fabricate three dimensional hybrid nanowire/thin-film structures. The a-Si:H layer formed a radial junction p-i-n diode solar cell around the ZnO nanowire. The cylindrical hybrid solar cells enhanced light scattering throughout the UV-visible-NIR spectrum (300 nm–800 nm) resulting in a 22% increase in short-circuit current density compared to the reference planar p-i-n device. A fill factor of 69% and a total power conversion efficiency of 6.5% were achieved with the hybrid nanowire solar cells using a spin-on indium tin oxide nanoparticle suspension as the top contact.

  9. Vertically Aligned ZnO Nanorods: Effect of Synthesis Parameters.

    PubMed

    Rehman, Zeeshan Ur; Heo, Si-Nae; Cho, Hyeon Ji; Koo, Bon Heun

    2016-06-01

    This report is devoted to the synthesis of high quality nanorods using spin coating technique for seed layer growth. Effect of different parameter i.e., spins coating counts, spin coating speed, and the effect of temperature during the drying process was analyzed. Hot plate and furnace technique was used for heating purpose and the difference in the morphology was carefully observed. It is worthy to mention here that there is a substantial effect of all the above mentioned parameters on the growth and morphology of the ZnO nanostructure. The ZnO nanorods were finally synthesized using wet chemical method. The morphological properties of the obtained nanostructures were analyzed by using FESEM technique. PMID:27427752

  10. Polar surface effects on the thermal conductivity of ZnO nanowires: a shell-like surface reconstruction-induced preserving mechanism.

    PubMed

    Jiang, Jin-Wu; Park, Harold S; Rabczuk, Timon

    2013-11-21

    We perform molecular dynamics (MD) simulations to investigate the effect of polar surfaces on the thermal transport in zinc oxide (ZnO) nanowires. We find that the thermal conductivity of nanowires with free polar (0001) surfaces is much higher than that of nanowires that have been stabilized with reduced charges on the polar (0001) surfaces, and also hexagonal nanowires without any transverse polar surface, where the reduced charge model has been proposed as a promising stabilization mechanism for the (0001) polar surfaces of ZnO nanowires. From normal mode analysis, we show that the higher thermal conductivity is due to the shell-like reconstruction that occurs for the free polar surfaces. This shell-like reconstruction suppresses twisting motion in the nanowires such that the bending phonon modes are not scattered by the other phonon modes, and this leads to substantially higher thermal conductivity of the ZnO nanowires with free polar surfaces. Furthermore, the auto-correlation function of the normal mode coordinate is utilized to extract the phonon lifetime, which leads to a concise explanation for the higher thermal conductivity of ZnO nanowires with free polar surfaces. Our work demonstrates that ZnO nanowires without polar surfaces, which exhibit low thermal conductivity, are more promising candidates for thermoelectric applications than nanowires with polar surfaces (and also high thermal conductivity).

  11. Doping of ZnO nanowires using phosphorus diffusion from a spin-on doped glass source

    SciTech Connect

    Bocheux, A.; Robin, I. C.; Bonaimé, J.; Hyot, B.; Feuillet, G.; Kolobov, A. V.; Fons, P.; Mitrofanov, K. V.; Tominaga, J.; Tamenori, Y.

    2014-05-21

    In this article, we report on ZnO nanowires that were phosphorus doped using a spin on dopant glass deposition and diffusion method. Photoluminescence measurements suggest that this process yields p-doped ZnO. The spatial location of P atoms was studied using x-ray near-edge absorption structure spectroscopy and it is concluded that the doping is amphoteric with P atoms located on both Zn and O sites.

  12. Electrochemical synthesis of vertically aligned zinc nanowires using track-etched polycarbonate membranes as templates.

    PubMed

    Liu, Z; Zein El Abedin, S; Ghazvini, M S; Endres, F

    2013-07-21

    In the present paper, vertically aligned arrays of zinc nanowires were synthesized by electrochemical deposition into ion track-etched polycarbonate membranes in the ionic liquid electrolyte 1-ethyl-3-methylimidazolium trifluoromethylsulfonate ([EMIm]TfO)/Zn(TfO)2. Cyclic voltammetry and chronoamperometry were performed to investigate the electrochemical growth of zinc nanowires inside of the membranes. The transport processes and mechanisms of the nanowire growth in the membranes are also discussed. A supporting zinc or copper layer was deposited on the sputtered side in order to make the back layer thick enough to stabilize the wires. Zinc nanowires with a diameter of 90 nm and a length of up to 18 μm were obtained after removing the template. Furthermore, short nanowires with lengths less than 5 μm and a sandwich-like structure with nanowires in the middle were also synthesized. Vertically aligned zinc nanowire structures on such a substrate might be a potential anode candidate for future generation lithium ion batteries.

  13. Catalyst-Free Synthesis of ZnO Nanowires on Oxidized Silicon Substrate for Gas Sensing Applications.

    PubMed

    Behera, B; Chandra, S

    2015-06-01

    In the present work, we report the synthesis of nanostructured ZnO by oxidation of zinc film without using a seed or catalyst layer. The zinc films were deposited on oxidized Si substrates by RF magnetron sputtering process. These were oxidized in dry and wet air/oxygen ambient. The optimized process yielded long nanowires of ZnO having diameter of around 60-70 nm and spread uniformly over the surface. The effect of oxidation temperature, time, Zn film thickness and the ambient has strong influence on the morphology of resulting nanostruxctured ZnO film. The films were characterized by scanning electron microscopy for morphological studies and X-ray diffraction (XRD) analysis to study the phase of the nanostructured ZnO. Room temperature photoluminescence (PL) measurements of the nanowires show UV and green emission. A sensor was designed and fabricated using nanostructured ZnO film, incorporating inter-digital-electrode (IDE) for the measurement of resistance of the sensing layer. The gas sensing properties were investigated from the measurement of change in resistance when exposed to vapours of different volatile organic compound (VOC) such as acetone, ethanol, methanol and 2-propanol. The results suggest that ZnO nanowires fabricated by this method have potential application in gas sensors.

  14. ZnO nanowire array growth on precisely controlled patterns of inkjet-printed zinc acetate at low-temperatures

    NASA Astrophysics Data System (ADS)

    Tsangarides, Constantinos P.; Ma, Hanbin; Nathan, Arokia

    2016-06-01

    ZnO nanowires have been fabricated through the hydrothermal method on inkjet-printed patterns of zinc acetate dihydrate. The silicon substrate used was heated accordingly during the printing period in order to maintain good spatial uniformity of the zinc acetate nanoparticles, responsible for the pattern morphology. Printing more than one pass of precursor ink leads to an increase in seed layer thickness that subsequently alters the density and dimensions of nanowires. It has been demonstrated that with the right inkjet-printing parameters and substrate temperature, ZnO nanowires can be effortlessly fabricated in accordance with the desired pattern variations under low temperature and mild conditions that ensures promising applications in optoelectronic devices.ZnO nanowires have been fabricated through the hydrothermal method on inkjet-printed patterns of zinc acetate dihydrate. The silicon substrate used was heated accordingly during the printing period in order to maintain good spatial uniformity of the zinc acetate nanoparticles, responsible for the pattern morphology. Printing more than one pass of precursor ink leads to an increase in seed layer thickness that subsequently alters the density and dimensions of nanowires. It has been demonstrated that with the right inkjet-printing parameters and substrate temperature, ZnO nanowires can be effortlessly fabricated in accordance with the desired pattern variations under low temperature and mild conditions that ensures promising applications in optoelectronic devices. Electronic supplementary information (ESI) available: Printing parameters in detail and extra figures. See DOI: 10.1039/c6nr02962k

  15. Fabrication of a Miniaturized ZnO Nanowire Accelerometer and Its Performance Tests.

    PubMed

    Kim, Hyun Chan; Song, Sangho; Kim, Jaehwan

    2016-01-01

    This paper reports a miniaturized piezoelectric accelerometer suitable for a small haptic actuator array. The accelerometer is made with zinc oxide (ZnO) nanowire (NW) grown on a copper wafer by a hydrothermal process. The size of the accelerometer is 1.5 × 1.5 mm², thus fitting the 1.8 × 1.8 mm² haptic actuator array cell. The detailed fabrication process of the miniaturized accelerometer is illustrated. Performance evaluation of the fabricated accelerometer is conducted by comparing it with a commercial piezoelectric accelerometer. The output current of the fabricated accelerometer increases linearly with the acceleration. The miniaturized ZnO NW accelerometer is feasible for acceleration measurement of small and lightweight devices. PMID:27649184

  16. Fabrication of a Miniaturized ZnO Nanowire Accelerometer and Its Performance Tests

    PubMed Central

    Kim, Hyun Chan; Song, Sangho; Kim, Jaehwan

    2016-01-01

    This paper reports a miniaturized piezoelectric accelerometer suitable for a small haptic actuator array. The accelerometer is made with zinc oxide (ZnO) nanowire (NW) grown on a copper wafer by a hydrothermal process. The size of the accelerometer is 1.5 × 1.5 mm2, thus fitting the 1.8 × 1.8 mm2 haptic actuator array cell. The detailed fabrication process of the miniaturized accelerometer is illustrated. Performance evaluation of the fabricated accelerometer is conducted by comparing it with a commercial piezoelectric accelerometer. The output current of the fabricated accelerometer increases linearly with the acceleration. The miniaturized ZnO NW accelerometer is feasible for acceleration measurement of small and lightweight devices. PMID:27649184

  17. Fabrication of a Miniaturized ZnO Nanowire Accelerometer and Its Performance Tests.

    PubMed

    Kim, Hyun Chan; Song, Sangho; Kim, Jaehwan

    2016-01-01

    This paper reports a miniaturized piezoelectric accelerometer suitable for a small haptic actuator array. The accelerometer is made with zinc oxide (ZnO) nanowire (NW) grown on a copper wafer by a hydrothermal process. The size of the accelerometer is 1.5 × 1.5 mm², thus fitting the 1.8 × 1.8 mm² haptic actuator array cell. The detailed fabrication process of the miniaturized accelerometer is illustrated. Performance evaluation of the fabricated accelerometer is conducted by comparing it with a commercial piezoelectric accelerometer. The output current of the fabricated accelerometer increases linearly with the acceleration. The miniaturized ZnO NW accelerometer is feasible for acceleration measurement of small and lightweight devices.

  18. Weak localization and electron-electron interactions in indium-doped ZnO nanowires.

    PubMed

    Thompson, Richard S; Li, Dongdong; Witte, Christopher M; Lu, Jia G

    2009-12-01

    Single crystal ZnO nanowires doped with indium are synthesized via the laser-assisted chemical vapor deposition method. The conductivity of the nanowires is measured at low temperatures in magnetic fields with directions both perpendicular and parallel to the wire axes. A quantitative fit of our data is obtained, consistent with the theory of a quasi-one-dimensional metallic system with quantum corrections due to weak localization and electron-electron interactions. The anisotropy of the magneto-conductivity agrees with theory. The two quantum corrections are of approximately equal magnitude with respective temperature dependences of T(-1/3)and T(-1/2). The alternative model of quasi-two-dimensional surface conductivity is excluded by the absence of oscillations in the magneto-conductivity in parallel magnetic fields. PMID:19831413

  19. Type II band alignment in InAs zinc-blende/wurtzite heterostructured nanowires

    NASA Astrophysics Data System (ADS)

    Panda, Jaya Kumar; Chakraborty, Arup; Ercolani, Daniele; Gemmi, Mauro; Sorba, Lucia; Roy, Anushree

    2016-10-01

    In this article we demonstrate type-II band alignment at the wurtzite/zinc-blende hetero-interface in InAs polytype nanowires using resonance Raman measurements. Nanowires were grown with an optimum ratio of the above mentioned phases, so that in the electronic band alignment of such NWs the effect of the difference in the crystal structure dominates over other perturbing effects (e.g. interfacial strain, confinement of charge carriers and band bending due to space charge). Experimental results are compared with the band alignment obtained from density functional theory calculations. In resonance Raman measurements, the excitation energies in the visible range probe the band alignment formed by the E 1 gap of wurtzite and zinc-blende phases. However, we expect our claim to be valid also for band alignment near the fundamental gap at the heterointerface.

  20. Type II band alignment in InAs zinc-blende/wurtzite heterostructured nanowires.

    PubMed

    Panda, Jaya Kumar; Chakraborty, Arup; Ercolani, Daniele; Gemmi, Mauro; Sorba, Lucia; Roy, Anushree

    2016-10-14

    In this article we demonstrate type-II band alignment at the wurtzite/zinc-blende hetero-interface in InAs polytype nanowires using resonance Raman measurements. Nanowires were grown with an optimum ratio of the above mentioned phases, so that in the electronic band alignment of such NWs the effect of the difference in the crystal structure dominates over other perturbing effects (e.g. interfacial strain, confinement of charge carriers and band bending due to space charge). Experimental results are compared with the band alignment obtained from density functional theory calculations. In resonance Raman measurements, the excitation energies in the visible range probe the band alignment formed by the E 1 gap of wurtzite and zinc-blende phases. However, we expect our claim to be valid also for band alignment near the fundamental gap at the heterointerface. PMID:27586817

  1. Type II band alignment in InAs zinc-blende/wurtzite heterostructured nanowires.

    PubMed

    Panda, Jaya Kumar; Chakraborty, Arup; Ercolani, Daniele; Gemmi, Mauro; Sorba, Lucia; Roy, Anushree

    2016-10-14

    In this article we demonstrate type-II band alignment at the wurtzite/zinc-blende hetero-interface in InAs polytype nanowires using resonance Raman measurements. Nanowires were grown with an optimum ratio of the above mentioned phases, so that in the electronic band alignment of such NWs the effect of the difference in the crystal structure dominates over other perturbing effects (e.g. interfacial strain, confinement of charge carriers and band bending due to space charge). Experimental results are compared with the band alignment obtained from density functional theory calculations. In resonance Raman measurements, the excitation energies in the visible range probe the band alignment formed by the E 1 gap of wurtzite and zinc-blende phases. However, we expect our claim to be valid also for band alignment near the fundamental gap at the heterointerface.

  2. Direct fabrication of superhydrophobic ceramic surfaces with ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Chung, Jihoon; Lee, Sukyung; Yong, Hyungseok; Lee, Sangmin; Park, Yong Tae

    2016-02-01

    Super-hydrophobic surfaces having contact angles > 150° for water are of great interest due to their potential use in a wide variety of applications. Although many reports on the wettability of different surfaces have been published, few or no studies have been done on the formation of a super-hydrophobic surface on a ceramic substrate. In this paper, we demonstrate the creation of a super-hydrophobic surface on a ceramic substrate by using zinc oxide nanowires (ZnO NWs) prepared by using a direct hydrothermal method. A self-assembled monolayer of heptadecafluoro- 1,1,2,2-tetrahydrodecyl trichlorosilane (HDFS) lowered the surface energy between the water droplet and the nano-textured surface. The length of the ZnO NWs was found to play a key role in the formation of a nanostructure that increased the surface roughness of the substrate. Furthermore, the length of the ZnO NWs could be controlled by changing the growth time, and HDFS-coated ZnO NWs were found to be super-hydrophobic after a growth time of 3 h. We have demonstrated the potential application of this nanostructure for ceramic tableware by introducing a ZnO-NW-textured surface on a ceramic cup, which resulted in water and alcohol repellency. This method is a simple and practical way to achieve a super-hydrophobic surface; hence, our method is expected to be widely used in various ceramic applications.

  3. A ZnO nanowire-based photo-inverter with pulse-induced fast recovery

    NASA Astrophysics Data System (ADS)

    Ali Raza, Syed Raza; Lee, Young Tack; Hosseini Shokouh, Seyed Hossein; Ha, Ryong; Choi, Heon-Jin; Im, Seongil

    2013-10-01

    We demonstrate a fast response photo-inverter comprised of one transparent gated ZnO nanowire field-effect transistor (FET) and one opaque FET respectively as the driver and load. Under ultraviolet (UV) light the transfer curve of the transparent gate FET shifts to the negative side and so does the voltage transfer curve (VTC) of the inverter. After termination of UV exposure the recovery of photo-induced current takes a long time in general. This persistent photoconductivity (PPC) is due to hole trapping on the surface of ZnO NWs. Here, we used a positive voltage short pulse after UV exposure, for the first time resolving the PPC issue in nanowire-based photo-detectors by accumulating electrons at the ZnO/dielectric interface. We found that a pulse duration as small as 200 ns was sufficient to reach a full recovery to the dark state from the UV induced state, realizing a fast UV detector with a voltage output.We demonstrate a fast response photo-inverter comprised of one transparent gated ZnO nanowire field-effect transistor (FET) and one opaque FET respectively as the driver and load. Under ultraviolet (UV) light the transfer curve of the transparent gate FET shifts to the negative side and so does the voltage transfer curve (VTC) of the inverter. After termination of UV exposure the recovery of photo-induced current takes a long time in general. This persistent photoconductivity (PPC) is due to hole trapping on the surface of ZnO NWs. Here, we used a positive voltage short pulse after UV exposure, for the first time resolving the PPC issue in nanowire-based photo-detectors by accumulating electrons at the ZnO/dielectric interface. We found that a pulse duration as small as 200 ns was sufficient to reach a full recovery to the dark state from the UV induced state, realizing a fast UV detector with a voltage output. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr03801g

  4. ZnO homojunction photodiodes based on Sb-doped p-type nanowire array and n-type film for ultraviolet detection

    SciTech Connect

    Wang Guoping; Chu Sheng; Zhan Ning; Liu Jianlin; Lin Yuqing; Chernyak, Leonid

    2011-01-24

    ZnO p-n homojunctions based on Sb-doped p-type nanowire array and n-type film were grown by combining chemical vapor deposition (for nanowires) with molecular-beam epitaxy (for film). Indium tin oxide and Ti/Au were used as contacts to the ZnO nanowires and film, respectively. Characteristics of field-effect transistors using ZnO nanowires as channels indicate p-type conductivity of the nanowires. Electron beam induced current profiling confirmed the existence of ZnO p-n homojunction. Rectifying I-V characteristic showed a turn-on voltage of around 3 V. Very good response to ultraviolet light illumination was observed from photocurrent measurements.

  5. The role of water co-adsorption on the modification of ZnO nanowires using acetic acid.

    PubMed

    Domínguez, Adriel; grosse Holthaus, Svea; Köppen, Susan; Frauenheim, Thomas; da Rosa, Andreia Luisa

    2014-05-14

    Density functional theory (DFT) and Car-Parinello molecular dynamic simulations were employed to investigate the interaction of acetic acid with non-polar facets of ultra-thin ZnO nanowires. We consider both a dry and a water environment as well as different molecule coverages for the hydrated system. Our calculations reveal that the fully-covered nanowire is energetically favored in the aqueous environment at room temperature. We also identified a minor influence of liquid water on the denticity of the ligands for the fully modified system. However, a monodentate adsorption is expected for a half-covered nanowire due to strong ligand-water interactions.

  6. The role of water co-adsorption on the modification of ZnO nanowires using acetic acid.

    PubMed

    Domínguez, Adriel; grosse Holthaus, Svea; Köppen, Susan; Frauenheim, Thomas; da Rosa, Andreia Luisa

    2014-05-14

    Density functional theory (DFT) and Car-Parinello molecular dynamic simulations were employed to investigate the interaction of acetic acid with non-polar facets of ultra-thin ZnO nanowires. We consider both a dry and a water environment as well as different molecule coverages for the hydrated system. Our calculations reveal that the fully-covered nanowire is energetically favored in the aqueous environment at room temperature. We also identified a minor influence of liquid water on the denticity of the ligands for the fully modified system. However, a monodentate adsorption is expected for a half-covered nanowire due to strong ligand-water interactions. PMID:24668002

  7. A facile chemical route to synthesize ZnO nanoarrays: one-dimensional nanowire arrays and two-dimensional porous nanosheet arrays.

    PubMed

    Hua, Guomin; Sun, Li; Tian, Yue; Chen, Xiaomeng; Zhang, Lide; Dai, Jun; Hu, Linhua; Dai, Songyuan

    2011-04-01

    A facile chemical route is presented to synthesize ZnO nanoarrays including one-dimensional nanowire arrays and two-dimensional porous nanosheet arrays. Large-scale ZnO nanowire arrays with the length of 5 microm and aspect ratio of 42 were achieved by cyclic growth in aqueous solution. After being immerged in the zinc acetate solution for 24 h, the ZnO nanowire arrays converted to sheet-like Zn5(OH)8(CH3COO)2 arrays. Subsequently, the sheet-like Zn5(OH)8(CH3COO)2 arrays converted to the porous ZnO nanosheet arrays by annealing treatment. As demonstrated by the performance of dye-sensitized solar cells (DSC), the porous ZnO nanosheet arrays can improve the efficiency of DSC effectively. In addition, the synthesized ZnO nanoarrays have potential applications in solar cells, catalysis, sensors and other nanodevices.

  8. Polymer chain alignment and transistor properties of nanochannel-templated poly(3-hexylthiophene) nanowires

    NASA Astrophysics Data System (ADS)

    Oh, Seungjun; Hayakawa, Ryoma; Pan, Chengjun; Sugiyasu, Kazunori; Wakayama, Yutaka

    2016-08-01

    Nanowires of semiconducting poly(3-hexylthiophene) (P3HT) were produced by a nanochannel-template technique. Polymer chain alignment in P3HT nanowires was investigated as a function of nanochannel widths (W) and polymer chain lengths (L). We found that the ratio between chain length and channel width (L/W) was a key parameter as regards promoting polymer chain alignment. Clear dichroism was observed in polarized ultraviolet-visible (UV-Vis) absorption spectra only at a ratio of approximately L/W = 2, indicating that the L/W ratio must be optimized to achieve uniaxial chain alignment in the nanochannel direction. We speculate that an appropriate L/W ratio is effective in confining the geometries and conformations of polymer chains. This discussion was supported by theoretical simulations based on molecular dynamics. That is, the geometry of the polymer chains, including the distance and tilting angles of the chains in relation to the nanochannel surface, was dominant in determining the longitudinal alignment along the nanochannels. Thus prepared highly aligned polymer nanowire is advantageous for electrical carrier transport and has great potential for improving the device performance of field-effect transistors. In fact, a one-order improvement in carrier mobility was observed in a P3HT nanowire transistor.

  9. ZnO nanowire/reduced graphene oxide nanocomposites for significantly enhanced photocatalytic degradation of Rhodamine 6G

    NASA Astrophysics Data System (ADS)

    Zhang, Chao; Zhang, Jing; Su, Yanjie; Xu, Minghan; Yang, Zhi; Zhang, Yafei

    2014-02-01

    We have demonstrated a facile and low-cost approach to synthesize ZnO nanowire (NW)/reduced graphene oxide (RGO) nanocomposites, in which ZnO NWs and graphene oxide (GO) were produced in large scale separately and then hybridized into ZnO NW/RGO nanocomposites by mechanical mixing and low-temperature thermal reduction. Rhodamine 6G (Rh6G) was used as a model dye to evaluate the photocatalytic properties of ZnO NW/RGO nanocomposites. The obtained nanocomposites show significantly enhanced photocatalytic performance, which took only 10 min to decompose over 98% Rh6G. Finally the mechanism of the great enhancement about photocatalytic activity of ZnO NW/RGO nanocomposites is studied. It is mainly attributed to that RGO nanosheets can transfer the electrons of ZnO NWs excited by ultraviolet (UV) irradiation, increase electron migration efficiency, and then longer the lifetime of the holes in ZnO NWs. The high charge separation efficiency of photo-generated electron-hole pairs directly leads to the lower recombination rate of ZnO NW/RGO nanocomposites, makes more effective electrons and holes to participate the radical reactions with Rh6G, thus significantly improving the photocatalytic properties. The high degradation efficiency makes the ZnO NW/RGO nanocomposites promising candidates in the application of environmental pollutant and wastewater treatment.

  10. Effects of the physical properties of atomic layer deposition grown seeding layers on the preparation of ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Ladanov, Mikhail; Algarin-Amaris, Paula; Villalba, Pedro; Emirov, Yusuf; Matthews, Garrett; Thomas, Sylvia; Ram, Manoj K.; Kumar, Ashok; Wang, Jing

    2013-11-01

    Zinc oxide (ZnO) nanowires are growing in interest as the number of devices for which they are well suited increases. Success in these applications requires defined and controlled geometric incorporation of the wires into the various platforms. Therefore, establishing the ability to tailor the growth ZnO nanowires to produce specified sizes, surface densities, and orientation will be important. In the reported work, the effects of the seeding layer on these factors were accessed. Atomic layer deposition (ALD) was used to produce thin films of ZnO under varying growth and post-processing conditions. These films were fully characterized, including their thickness, surface roughness, and crystalline orientation. Using these well-defined films as the seeding layer, ZnO nanowires were grown and subsequently characterized in terms of morphology and crystalline properties. It was shown that the resulting nanowire properties are dependent upon the nature of the seeding layer, and careful production of the seeding layer allows for some control over these properties.

  11. Effects of annealing on the ferromagnetism and photoluminescence of Cu-doped ZnO nanowires.

    PubMed

    Xu, H J; Zhu, H C; Shan, X D; Liu, Y X; Gao, J Y; Zhang, X Z; Zhang, J M; Wang, P W; Hou, Y M; Yu, D P

    2010-01-13

    Room temperature ferromagnetic Cu-doped ZnO nanowires have been synthesized using the chemical vapor deposition method. By combining structural characterizations and comparative annealing experiments, it has been found that both extrinsic (CuO nanoparticles) and intrinsic (Zn(1-x)Cu(x)O nanowires) sources are responsible for the observed ferromagnetic ordering of the as-grown samples. As regards the former, annealing in Zn vapor led to a dramatic decrease of the ferromagnetism. For the latter, a reversible switching of the ferromagnetism was observed with sequential annealings in Zn vapor and oxygen ambience respectively, which agreed well with previous reports for Cu-doped ZnO films. In addition, we have for the first time observed low temperature photoluminescence changed with magnetic properties upon annealing in different conditions, which revealed the crucial role played by interstitial zinc in directly mediating high T(c) ferromagnetism and indirectly modulating the Cu-related structured green emission via different charge transfer transitions.

  12. Gate tunable spin exchange interaction and inversion of magnetoresistance in ferromagnetic ZnO nanowire

    NASA Astrophysics Data System (ADS)

    Modepalli, Vijayakumar; Jin, Mi-Jin; Park, Jungmin; Jo, Junhyeon; Kim, Ji-Hyun; Baik, Jeong Min; Kim, Jeongyong; Yoo, Jung-Woo

    Tuning magnetism in diluted magnetic semiconductor (DMS) is one of the central issue to the development of future spintronic device applications. Particularly, realizing such control in nanostructure has received growing attention. Here, we report the dramatic change of MR in ferromagnetic ZnO nanowire with varied gate voltages (+50 V to -40 V) at different temperatures (2 K to 50 K). The MR signal was greatly influenced by the gate voltage induced carrier concentrations which results the inversion of MR from positive to negative sign while pertaining the coexistence of both parts before inversion in the range of -2T to 2T. The origin of negative MR is mainly due to spin scattering while the positive one is due to a field induced change in relative populations of conduction bands with different conductivities. The extracted spin exchange related parameter was well tuned with the varied gate voltages at different temperatures. More importantly this type of gate tuning of spin exchange interactions in ferromagnetic single ZnO nanowire is well suitable for future spintronic device applications.

  13. Schottky-contacted vertically self-aligned ZnO nanorods for hydrogen gas nanosensor applications

    SciTech Connect

    Ranwa, Sapana; Kumar, Mohit; Kumar, Mahesh; Singh, Jitendra; Fanetti, Mattia

    2015-07-21

    Vertically well aligned ZnO nanorods (NRs) were grown on Si(100) substrate using RF magnetron sputtering technique. Scanning electron microscopy images confirms uniform distribution of NRs on 2 in. wafer with average diameter, height and density being ∼75 nm, ∼850 nm, and ∼1.5 × 10{sup 10} cm{sup −2}, respectively. X-ray diffraction reveals that the ZnO NRs are grown along c-axis direction with wurtzite crystal structure. Cathodoluminescence spectroscopy, which shows a single strong peak around 3.24 eV with full width half maxima 130 meV, indicates the high crystalline and optical quality of ZnO and very low defect density. Vertically aligned nanosensors were fabricated by depositing gold circular Schottky contacts on ZnO NRs. Resistance responses of nanosensors were observed in the range from 50 to 150 °C in 1% and 5% hydrogen in argon environment, which is below and above the explosive limit (4%) of hydrogen in air. The nanosensor's sensitivity increases from 11% to 67% with temperature from 50 to 150 °C and also shows fast response time (9–16 s) and moderate recovery time (100–200 s). A sensing mechanism is proposed based on Schottky barrier changes at heterojunctions and change in depletion region of NRs.

  14. Schottky-contacted vertically self-aligned ZnO nanorods for hydrogen gas nanosensor applications

    NASA Astrophysics Data System (ADS)

    Ranwa, Sapana; Kumar, Mohit; Singh, Jitendra; Fanetti, Mattia; Kumar, Mahesh

    2015-07-01

    Vertically well aligned ZnO nanorods (NRs) were grown on Si(100) substrate using RF magnetron sputtering technique. Scanning electron microscopy images confirms uniform distribution of NRs on 2 in. wafer with average diameter, height and density being ˜75 nm, ˜850 nm, and ˜1.5 × 1010 cm-2, respectively. X-ray diffraction reveals that the ZnO NRs are grown along c-axis direction with wurtzite crystal structure. Cathodoluminescence spectroscopy, which shows a single strong peak around 3.24 eV with full width half maxima 130 meV, indicates the high crystalline and optical quality of ZnO and very low defect density. Vertically aligned nanosensors were fabricated by depositing gold circular Schottky contacts on ZnO NRs. Resistance responses of nanosensors were observed in the range from 50 to 150 °C in 1% and 5% hydrogen in argon environment, which is below and above the explosive limit (4%) of hydrogen in air. The nanosensor's sensitivity increases from 11% to 67% with temperature from 50 to 150 °C and also shows fast response time (9-16 s) and moderate recovery time (100-200 s). A sensing mechanism is proposed based on Schottky barrier changes at heterojunctions and change in depletion region of NRs.

  15. Fabrication of Si3N4 nanowire membranes: free standing disordered nanopapers and aligned nanowire assemblies

    NASA Astrophysics Data System (ADS)

    Liu, Haitao; Fang, Minghao; Huang, Zhaohui; Huang, Juntong; Liu, Yan-gai; Wu, Xiaowen

    2016-08-01

    Herein, ultralong silicon nitride nanowires were synthesized via a chemical vapor deposition method by using the low-cost quartz and silicon powder as raw materials. Simple processes were used for the fabrication of disordered and ordered nanowire membranes of pure silicon nitride nanowires. The nanowires in the disordered nanopapers are intertwined with each other to form a paper-like structure which exhibit excellent flame retardancy and mechanical properties. Fourier-transform infrared spectroscopy and thermal gravity analysis were employed to characterize the refractory performance of the disordered nanopapers. Highly ordered nanowire membranes were also assembled through a three-phase assembly approach which make the Si3N4 nanowires have potential use in textured ceramics and semiconductor field. Moreover, the surface nanowires can also be modified to be hydrophobic; this characteristic make the as-prepared nanowires have the potential to be assembled by the more effective Langmuir–Blodgett method and also make the disordered nanopapers possess a super-hydrophobic surface.

  16. Fabrication of Si3N4 nanowire membranes: free standing disordered nanopapers and aligned nanowire assemblies

    NASA Astrophysics Data System (ADS)

    Liu, Haitao; Fang, Minghao; Huang, Zhaohui; Huang, Juntong; Liu, Yan-gai; Wu, Xiaowen

    2016-08-01

    Herein, ultralong silicon nitride nanowires were synthesized via a chemical vapor deposition method by using the low-cost quartz and silicon powder as raw materials. Simple processes were used for the fabrication of disordered and ordered nanowire membranes of pure silicon nitride nanowires. The nanowires in the disordered nanopapers are intertwined with each other to form a paper-like structure which exhibit excellent flame retardancy and mechanical properties. Fourier-transform infrared spectroscopy and thermal gravity analysis were employed to characterize the refractory performance of the disordered nanopapers. Highly ordered nanowire membranes were also assembled through a three-phase assembly approach which make the Si3N4 nanowires have potential use in textured ceramics and semiconductor field. Moreover, the surface nanowires can also be modified to be hydrophobic; this characteristic make the as-prepared nanowires have the potential to be assembled by the more effective Langmuir-Blodgett method and also make the disordered nanopapers possess a super-hydrophobic surface.

  17. Catalyst-Free, Selective Growth of ZnO Nanowires on SiO2 by Chemical Vapor Deposition for Transfer-Free Fabrication of UV Photodetectors.

    PubMed

    Xu, Liping; Li, Xin; Zhan, Zhaoyao; Wang, Liang; Feng, Shuanglong; Chai, Xiangyu; Lu, Wenqiang; Shen, Jun; Weng, Zhankun; Sun, Jie

    2015-09-16

    Catalyst-free, selective growth of ZnO nanowires directly on the commonly used dielectric SiO2 layer is of both scientific significance and application importance, yet it is still a challenge. Here, we report a facile method to grow single-crystal ZnO nanowires on a large scale directly on SiO2/Si substrate through vapor-solid mechanism without using any predeposited metal catalyst or seed layer. We found that a rough SiO2/Si substrate surface created by the reactive ion etching is critical for ZnO growth without using catalyst. ZnO nanowire array exclusively grows in area etched by the reactive ion etching method. The advantages of this method include facile and safe roughness-assisted catalyst-free growth of ZnO nanowires on SiO2/Si substrate and the subsequent transfer-free fabrication of electronic or optoelectronic devices. The ZnO nanowire UV photodetector fabricated by a transfer-free process presented high performance in responsivity, quantum efficiency and response speed, even without any post-treatments. The strategy shown here would greatly reduce the complexity in nanodevice fabrication and give an impetus to the application of ZnO nanowires in nanoelectronics and optoelectronics. PMID:26308593

  18. Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance

    PubMed Central

    2014-01-01

    An easy and low-cost method to transfer large-scale horizontally aligned Si nanowires onto a substrate is reported. Si nanowires prepared by metal-assisted chemical etching were assembled and anchored to fabricate multiwire photoconductive devices with standard Si technology. Scanning electron microscopy images showed highly aligned and successfully anchored Si nanowires. Current-voltage tests showed an approximately twofold change in conductivity between the devices in dark and under laser irradiation. Fully reversible light switching ON/OFF response was also achieved with an ION/IOFF ratio of 230. Dynamic response measurement showed a fast switching feature with response and recovery times of 10.96 and 19.26 ms, respectively. PMID:25520603

  19. Physical properties of annealed ZnO nanowire/CuSCN heterojunctions for self-powered UV photodetectors.

    PubMed

    Garnier, Jérôme; Parize, Romain; Appert, Estelle; Chaix-Pluchery, Odette; Kaminski-Cachopo, Anne; Consonni, Vincent

    2015-03-18

    The low-cost fabrication of ZnO nanowire/CuSCN heterojunctions is demonstrated by combining chemical bath deposition with impregnation techniques. The ZnO nanowire arrays are completely filled by the CuSCN layer from their bottoms to their tops. The CuSCN layer is formed of columnar grains that are strongly oriented along the [003] direction owing to the polymeric form of the β-rhombohedral crystalline phase. Importantly, an annealing step is found essential in a fairly narrow range of low temperatures, not only for outgassing the solvent from the CuSCN layer, but also for reducing the density of interfacial defects. The resulting electrical properties of annealed ZnO nanowire/CuSCN heterojunctions are strongly improved: a maximum rectification ratio of 2644 at ±2 V is achieved following annealing at 150 °C under air atmosphere, which is related to a strong decrease in the reverse current density. Interestingly, the corresponding self-powered UV photodetectors exhibit a responsivity of 0.02 A/W at zero bias and at 370 nm with a UV-to-visible (370-500 nm) rejection ratio of 100 under an irradiance of 100 mW/cm(2). The UV selectivity at 370 nm can also be readily modulated by tuning the length of ZnO nanowires. Eventually, a significant photovoltaic effect is revealed for this type of heterojunctions, leading to an open circuit voltage of 37 mV and a short circuit current density of 51 μA/cm(2), which may be useful for the self-powering of the complete device. These findings show the underlying physical mechanisms at work in ZnO nanowire/CuSCN heterojunctions and reveal their high potential as self-powered UV photodetectors.

  20. Earth-abundant oxygen evolution catalysts coupled onto ZnO nanowire arrays for efficient photoelectrochemical water cleavage.

    PubMed

    Jiang, Chaoran; Moniz, Savio J A; Khraisheh, Majeda; Tang, Junwang

    2014-09-26

    ZnO has long been considered as a model UV-driven photoanode for photoelectrochemical water splitting, but its performance has been limited by fast charge-carrier recombination, extremely poor stability in aqueous solution, and slow kinetics of water oxidation. These issues were addressed by applying a strategy of optimization and passivation of hydrothermally grown 1D ZnO nanowire arrays. The length and diameter of bare ZnO nanowires were optimized by varying the growth time and precursor concentration to achieve optimal photoelectrochemical performance. The addition of earth-abundant cobalt phosphate (Co-Pi) and nickel borate (Ni-B) oxygen evolution catalysts onto ZnO nanowires resulted in substantial cathodic shifts in onset potential to as low as about 0.3 V versus the reversible hydrogen electrode (RHE) for Ni-B/ZnO, for which a maximum photocurrent density of 1.1 mA cm(-2) at 0.9 V (vs. RHE) with applied bias photon-to-current efficiency of 0.4 % and an unprecedented near-unity incident photon-to-current efficiency at 370 nm. In addition the potential required for saturated photocurrent was dramatically reduced from 1.6 to 0.9 V versus RHE. Furthermore, the stability of these ZnO nanowires was significantly enhanced by using Ni-B compared to Co-Pi due to its superior chemical robustness, and it thus has additional functionality as a stable protecting layer on the ZnO surface. These remarkable enhancements in both photocatalytic activity and stability directly address the current severe limitations in the use of ZnO-based photoelectrodes for water-splitting applications, and can be applied to other photoanodes for efficient solar-driven fuel synthesis.

  1. Effects of silver impurity on the structural, electrical, and optical properties of ZnO nanowires

    PubMed Central

    2011-01-01

    1, 3, and 5 wt.% silver-doped ZnO (SZO) nanowires (NWs) are grown by hot-walled pulsed laser deposition. After silver-doping process, SZO NWs show some change behaviors, including structural, electrical, and optical properties. In case of structural property, the primary growth plane of SZO NWs is switched from (002) to (103) plane, and the electrical properties of SZO NWs are variously measured to be about 4.26 × 106, 1.34 × 106, and 3.04 × 105 Ω for 1, 3, and 5 SZO NWs, respectively. In other words, the electrical properties of SZO NWs depend on different Ag ratios resulting in controlling the carrier concentration. Finally, the optical properties of SZO NWs are investigated to confirm p-type semiconductor by observing the exciton bound to a neutral acceptor (A0X). Also, Ag presence in ZnO NWs is directly detected by both X-ray photoelectron spectroscopy and energy dispersive spectroscopy. These results imply that Ag doping facilitates the possibility of changing the properties in ZnO NWs by the atomic substitution of Ag with Zn in the lattice. PMID:21985620

  2. Contact properties and surface reaction kinetics of single ZnO nanowire devices fabricated by dielectrophoresis

    NASA Astrophysics Data System (ADS)

    Pau, J. L.; García Núñez, C.; García Marín, A.; Guerrero, C.; Rodríguez, P.; Borromeo, S.; Piqueras, J.

    2014-03-01

    This work describes the development of ZnO nanowire (NW) devices for ultraviolet detection and cost-effective gas sensing. A dielectrophoresis (DEP) flow cell fabricated for the integration of NWs on different substrates is presented. The system includes the possibility to set characteristic parameters such as alternating current (AC) frequency, amplitude or flow speed in order to control NW trapping on specific sites defined by micro-gapped electrodes. The electrical characteristics of the rectifying metal/NW contact fabricated by DEP are investigated in darkness and under direct illumination of the metal-NW interface through the ZnO NW. A significant downshift of the turn-on voltage is observed in the current-voltage characteristics during the illumination with photon energies higher than the ZnO bandgap. The reduction is attributed to a barrier height lowering induced by interface charge emission. The effects of AC bias on the thermal drift of the DC average current in NW devices are also discussed. Finally, the reaction kinetics of ethanol and water vapors on the NW surface are compared through the analysis of the DC current under direct exposure to gas flows. Device responses to more complex compound mixtures such as coffee or mint are also monitored over time, showing different performance in both cases.

  3. Tuning of structural, optical, and magnetic properties of ultrathin and thin ZnO nanowire arrays for nano device applications

    PubMed Central

    2014-01-01

    One-dimensional (1-D) ultrathin (15 nm) and thin (100 nm) aligned 1-D (0001) and (0001¯) oriented zinc oxide (ZnO) nanowire (NW) arrays were fabricated on copper substrates by one-step electrochemical deposition inside the pores of polycarbonate membranes. The aspect ratio dependence of the compressive stress because of the lattice mismatch between NW array/substrate interface and crystallite size variations is investigated. X-ray diffraction results show that the polycrystalline ZnO NWs have a wurtzite structure with a = 3.24 Å, c = 5.20 Å, and [002] elongation. HRTEM and SAED pattern confirmed the polycrystalline nature of ultrathin ZnO NWs and lattice spacing of 0.58 nm. The crystallite size and compressive stress in as-grown 15- and 100-nm wires are 12.8 nm and 0.2248 GPa and 22.8 nm and 0.1359 GPa, which changed to 16.1 nm and 1.0307 GPa and 47.5 nm and 1.1677 GPa after annealing at 873 K in ultrahigh vacuum (UHV), respectively. Micro-Raman spectroscopy showed that the increase in E2 (high) phonon frequency corresponds to much higher compressive stresses in ultrathin NW arrays. The minimum-maximum magnetization magnitude for the as-grown ultrathin and thin NW arrays are approximately 8.45 × 10−3 to 8.10 × 10−3 emu/g and approximately 2.22 × 10−7 to 2.190 × 10−7 emu/g, respectively. The magnetization in 15-nm NW arrays is about 4 orders of magnitude higher than that in the 100 nm arrays but can be reduced greatly by the UHV annealing. The origin of ultrathin and thin NW array ferromagnetism may be the exchange interactions between localized electron spin moments resulting from oxygen vacancies at the surfaces of ZnO NWs. The n-type conductivity of 15-nm NW array is higher by about a factor of 2 compared to that of the 100-nm ZnO NWs, and both can be greatly enhanced by UHV annealing. The ability to tune the stresses and the structural and relative occupancies of ZnO NWs in a wide range by annealing has

  4. The role of substrate surface alteration in the fabrication of vertically aligned CdTe nanowires.

    PubMed

    Neretina, S; Hughes, R A; Devenyi, G A; Sochinskii, N V; Preston, J S; Mascher, P

    2008-05-01

    Previously we have described the deposition of vertically aligned wurtzite CdTe nanowires derived from an unusual catalytically driven growth mode. This growth mode could only proceed when the surface of the substrate was corrupted with an alcohol layer, although the role of the corruption was not fully understood. Here, we present a study detailing the remarkable role that this substrate surface alteration plays in the development of CdTe nanowires; it dramatically improves the size uniformity and largely eliminates lateral growth. These effects are demonstrated to arise from the altered surface's ability to limit Ostwald ripening of the catalytic seed material and by providing a surface unable to promote the epitaxial relationship needed to sustain a lateral growth mode. The axial growth of the CdTe nanowires is found to be exclusively driven through the direct impingement of adatoms onto the catalytic seeds leading to a self-limiting wire height associated with the sublimation of material from the sidewall facets. The work presented furthers the development of the mechanisms needed to promote high quality substrate-based vertically aligned CdTe nanowires. With our present understanding of the growth mechanism being a combination of selective area epitaxy and a catalytically driven vapour-liquid-solid growth mode, these results also raise the intriguing possibility of employing this growth mode in other material systems in an effort to produce superior nanowires.

  5. Well-Aligned Arrays of Vertically Oriented ZnO Nanorod Films for Photocatalytic Degradation of Textile Dye

    NASA Astrophysics Data System (ADS)

    Nasr-Esfahani, Mojtaba; Nekoubin, Amin

    2011-05-01

    Well-aligned hexagonal ZnO nanorods arrays were synthesized via mild hydrothermal method under different conditions. A two-step approach was employed for the epitaxial growth of ZnO. First a ZnO seed layer was prepared by spin-coating process and then ZnO nanorods were deposited on it. The influences of growth time on the surface morphology, length, diameters and phase structure of ZnO rods films were investigated by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The photocatalytic degradation of X6G an anionic monoazo dye, in aqueous solutions, was investigated and the effects of hydrothermal process time were examined. The results showed that the ZnO nonorods film hydrothermal treated for 4 h have a very high photocatalytic performance.

  6. Effects of Nanowire Length and Surface Roughness on the Electrochemical Sensor Properties of Nafion-Free, Vertically Aligned Pt Nanowire Array Electrodes.

    PubMed

    Li, Zhiyang; Leung, Calvin; Gao, Fan; Gu, Zhiyong

    2015-01-01

    In this paper, vertically aligned Pt nanowire arrays (PtNWA) with different lengths and surface roughnesses were fabricated and their electrochemical performance toward hydrogen peroxide (H₂O₂) detection was studied. The nanowire arrays were synthesized by electroplating Pt in nanopores of anodic aluminum oxide (AAO) template. Different parameters, such as current density and deposition time, were precisely controlled to synthesize nanowires with different surface roughnesses and various lengths from 3 μm to 12 μm. The PtNWA electrodes showed better performance than the conventional electrodes modified by Pt nanowires randomly dispersed on the electrode surface. The results indicate that both the length and surface roughness can affect the sensing performance of vertically aligned Pt nanowire array electrodes. Generally, longer nanowires with rougher surfaces showed better electrochemical sensing performance. The 12 μm rough surface PtNWA presented the largest sensitivity (654 μA·mM⁻¹·cm⁻²) among all the nanowires studied, and showed a limit of detection of 2.4 μM. The 12 μm rough surface PtNWA electrode also showed good anti-interference property from chemicals that are typically present in the biological samples such as ascorbic, uric acid, citric acid, and glucose. The sensing performance in real samples (river water) was tested and good recovery was observed. These Nafion-free, vertically aligned Pt nanowires with surface roughness control show great promise as versatile electrochemical sensors and biosensors. PMID:26404303

  7. Effects of Nanowire Length and Surface Roughness on the Electrochemical Sensor Properties of Nafion-Free, Vertically Aligned Pt Nanowire Array Electrodes

    PubMed Central

    Li, Zhiyang; Leung, Calvin; Gao, Fan; Gu, Zhiyong

    2015-01-01

    In this paper, vertically aligned Pt nanowire arrays (PtNWA) with different lengths and surface roughnesses were fabricated and their electrochemical performance toward hydrogen peroxide (H2O2) detection was studied. The nanowire arrays were synthesized by electroplating Pt in nanopores of anodic aluminum oxide (AAO) template. Different parameters, such as current density and deposition time, were precisely controlled to synthesize nanowires with different surface roughnesses and various lengths from 3 μm to 12 μm. The PtNWA electrodes showed better performance than the conventional electrodes modified by Pt nanowires randomly dispersed on the electrode surface. The results indicate that both the length and surface roughness can affect the sensing performance of vertically aligned Pt nanowire array electrodes. Generally, longer nanowires with rougher surfaces showed better electrochemical sensing performance. The 12 μm rough surface PtNWA presented the largest sensitivity (654 μA·mM−1·cm−2) among all the nanowires studied, and showed a limit of detection of 2.4 μM. The 12 μm rough surface PtNWA electrode also showed good anti-interference property from chemicals that are typically present in the biological samples such as ascorbic, uric acid, citric acid, and glucose. The sensing performance in real samples (river water) was tested and good recovery was observed. These Nafion-free, vertically aligned Pt nanowires with surface roughness control show great promise as versatile electrochemical sensors and biosensors. PMID:26404303

  8. Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors

    PubMed Central

    2014-01-01

    This paper studies the effect of atomic layer deposition (ALD) temperature on the performance of top-down ZnO nanowire transistors. Electrical characteristics are presented for 10-μm ZnO nanowire field-effect transistors (FETs) and for deposition temperatures in the range 120°C to 210°C. Well-behaved transistor output characteristics are obtained for all deposition temperatures. It is shown that the maximum field-effect mobility occurs for an ALD temperature of 190°C. This maximum field-effect mobility corresponds with a maximum Hall effect bulk mobility and with a ZnO film that is stoichiometric. The optimized transistors have a field-effect mobility of 10 cm2/V.s, which is approximately ten times higher than can typically be achieved in thin-film amorphous silicon transistors. Furthermore, simulations indicate that the drain current and field-effect mobility extraction are limited by the contact resistance. When the effects of contact resistance are de-embedded, a field-effect mobility of 129 cm2/V.s is obtained. This excellent result demonstrates the promise of top-down ZnO nanowire technology for a wide variety of applications such as high-performance thin-film electronics, flexible electronics, and biosensing. PMID:25276107

  9. Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors.

    PubMed

    Sultan, Suhana M; Ditshego, Nonofo J; Gunn, Robert; Ashburn, Peter; Chong, Harold Mh

    2014-01-01

    This paper studies the effect of atomic layer deposition (ALD) temperature on the performance of top-down ZnO nanowire transistors. Electrical characteristics are presented for 10-μm ZnO nanowire field-effect transistors (FETs) and for deposition temperatures in the range 120°C to 210°C. Well-behaved transistor output characteristics are obtained for all deposition temperatures. It is shown that the maximum field-effect mobility occurs for an ALD temperature of 190°C. This maximum field-effect mobility corresponds with a maximum Hall effect bulk mobility and with a ZnO film that is stoichiometric. The optimized transistors have a field-effect mobility of 10 cm(2)/V.s, which is approximately ten times higher than can typically be achieved in thin-film amorphous silicon transistors. Furthermore, simulations indicate that the drain current and field-effect mobility extraction are limited by the contact resistance. When the effects of contact resistance are de-embedded, a field-effect mobility of 129 cm(2)/V.s is obtained. This excellent result demonstrates the promise of top-down ZnO nanowire technology for a wide variety of applications such as high-performance thin-film electronics, flexible electronics, and biosensing.

  10. Low operating voltage single ZnO nanowire field-effect transistors enabled by self-assembled organic gate nanodielectrics.

    PubMed

    Ju, Sanghyun; Lee, Kangho; Janes, David B; Yoon, Myung-Han; Facchetti, Antonio; Marks, Tobin J

    2005-11-01

    The development of nanowire transistors enabled by appropriate dielectrics is of great interest for flexible electronic and display applications. In this study, nanowire field-effect transistors (NW-FETs) composed of individual ZnO nanowires are fabricated using a self-assembled superlattice (SAS) as the gate insulator. The 15-nm SAS film used in this study consists of four interlinked layer-by-layer self-assembled organic monolayers and exhibits excellent insulating properties with a large specific capacitance, 180 nF/cm2, and a low leakage current density, 1 x 10(-8) A/cm2. SAS-based ZnO NW-FETs display excellent drain current saturation at Vds = 0.5 V, a threshold voltage (Vth) of -0.4 V, a channel mobility of approximately 196 cm2/V s, an on-off current ratio of approximately 10(4), and a subthreshold slope of 400 mV/dec. For comparison, ZnO NW-FETs are also fabricated using 70-nm SiO2 as the gate insulator. Implementation of the SAS gate dielectric reduces the NW-FET operating voltage dramatically with more than 1 order of magnitude enhancement of the on-current. These results strongly indicate that SAS-based ZnO NW-FETs are promising candidates for future flexible display and logic technologies.

  11. A MEMS based acetone sensor incorporating ZnO nanowires synthesized by wet oxidation of Zn film

    NASA Astrophysics Data System (ADS)

    Behera, Bhagaban; Chandra, Sudhir

    2015-01-01

    In this work, we report a simple and efficient method for synthesis of ZnO nanowires by thermal oxidation of Zn film and their integration with MEMS technologies to fabricate a sensor for acetone vapour detection. ZnO nanowires were prepared by thermal oxidation of sputter deposited Zn film. The nanostructured ZnO was characterized by x-ray diffraction, a scanning electron microscope and room temperature photoluminescence measurements. The ZnO nanowires synthesis process was integrated with MEMS technologies to obtain a sensor for volatile organic compounds, incorporating an on-chip Ni microheater and an interdigited electrode structure. To reduce the heat loss from the on-chip microheater, the sensor was made on a thin silicon diaphragm obtained via a modified reactive ion etching process. This resulted in considerable power saving during sensor operation. For this, a three-mask process was used. The performance of the microheater was simulated on COMSOL and validated experimentally. The sensor has been tested for acetone vapour sensing and the operating parameters were optimized. The sensor has the ability to detect acetone vapour at 5 parts per million (ppm) concentrations when operated at 100 °C. The sensor consumed only 36 mW power and showed a high-sensitivity value of 26.3% for 100 ppm of acetone vapour.

  12. TiO2 nanowire dispersions in viscous polymer matrix: electrophoretic alignment and optical properties

    NASA Astrophysics Data System (ADS)

    Šutka, Andris; Saal, Kristjan; Kisand, Vambola; Lõhmus, Rünno; Joost, Urmas; Timusk, Martin

    2014-10-01

    The changes in optical properties during TiO2 nanowire orientation in polydimethylsiloxane (PDMS) matrix under the influence of an electric field are strongly influenced by nanowire (NW) diameter. It was demonstrated for the first time that either positive or negative change in transmittance can be induced by NW alignment parallel to the electric field depending on the NW diameter. These effects can be explained by the interplay between scattering and reflectance. Experimental findings reported could be important for smart window applications for the regulation of visible or even infrared transparency, thus reducing the energy consumption by air conditioning systems in buildings and automobiles in the future.

  13. P-Cu2O/n-ZnO nanowires on ITO glass for solar cells.

    PubMed

    Zhang, Jin; Que, Wenxiu; Zhong, Peng; Zhu, Gangqiang

    2010-11-01

    In this paper, the fabrication and characterization of a heterojunction solar cell based on p-Cu2O/n-ZnO nanowires on ITO glass are presented. ZnO aligned nanocrystal seed layer is firstly prepared by RF magnetron sputtering technique, and then vertical ZnO nanowire arrays with an acicular crystal structure are obtained by using a chemical bath deposition processing. The results indicate that the ZnO nanowires with a diameter of about 50 nm and 500 nm in length can be easily obtained. The absorption and transmittance of the ZnO nanowires are studied. It is also noted that the Cu2O can fill well into the space between ZnO nanowires by an electrodeposition process. Furthermore, the effect of the Cu2O orientation on the cell performance is also presented. PMID:21137962

  14. Direct observation of Li diffusion in Li-doped ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Li, Guohua; Yu, Lei; Hudak, Bethany M.; Chang, Yao-Jen; Baek, Hyeonjun; Sundararajan, Abhishek; Strachan, Douglas R.; Yi, Gyu-Chul; Guiton, Beth S.

    2016-05-01

    The direct observation of Li diffusion in Li-doped zinc oxide nanowires (NWs) was realized by using in situ heating in the scanning transmission electron microscope (STEM). A continuous increase of low atomic mass regions within a single NW was observed between 200 °C and 600 °C when heated in vacuum, which was explained by the conversion of interstitial to substitutional Li in the ZnO NW host lattice. A kick-out mechanism is introduced to explain the migration and conversion of the interstitial Li (Lii) to Zn-site substitutional Li (LiZn), and this mechanism is verified with low-temperature (11 K) photoluminescence measurements on as-grown and annealed Li-doped zinc oxide NWs, as well as the observation of an increase of NW surface roughing with applied bias.

  15. Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires

    PubMed Central

    Sapkota, Keshab R.; Chen, Weimin; Maloney, F. Scott; Poudyal, Uma; Wang, Wenyong

    2016-01-01

    We report magnetoresistance (MR) manipulation and sign reversal induced by carrier concentration modulation in Mn-doped ZnO nanowires. At low temperatures positive magnetoresistance was initially observed. When the carrier concentration was increased through the application of a gate voltage, the magnetoresistance also increased and reached a maximum value. However, further increasing the carrier concentration caused the MR to decrease, and eventually an MR sign reversal from positive to negative was observed. An MR change from a maximum positive value of 25% to a minimum negative value of 7% was observed at 5 K and 50 KOe. The observed MR behavior was modeled by considering combined effects of quantum correction to carrier conductivity and bound magnetic polarons. This work could provide important insights into the mechanisms that govern magnetotransport in dilute magnetic oxides, and it also demonstrated an effective approach to manipulating magnetoresistance in these materials that have important spintronic applications. PMID:27739442

  16. Plasma enhanced multistate storage capability of single ZnO nanowire based memory

    SciTech Connect

    Lai, Yunfeng Xin, Pucong; Cheng, Shuying; Yu, Jinling; Zheng, Qiao

    2015-01-19

    Multiple-state storage (MSS) is common for resistive random access memory, but the effects of plasma treatment on the MSS and the switching properties have been scarcely investigated. We have demonstrated a stable four-state storage capability of single zinc oxide nanowire (ZnO NW) treated by argon plasma. The electrical switching is attributed to the electron trapping and detrapping from the oxygen vacancies (V{sub o}s). The MSS relates to the electrical-thermal induced distribution of the V{sub o}s which determines electron transport behavior to show different resistance states. Additionally, programming (set and reset) voltages decrease with plasma treatment due to the thickness modulation of the interface barrier.

  17. Input/output pulse operation of ZnO nanowire threshold integrators.

    PubMed

    White, Richard; Colli, Alan; Li, Hongwei; Kivioja, Jani

    2011-01-14

    Integrating more functionality into individual nano-components is a key step to exploit alternative architectures for energy-efficient computation, such as, for instance, neuromorphic computing. Here, we show how to configure ZnO nanowire field-effect transistors as light pulse integrators with programmable threshold. We demonstrate that these single-component devices can be operated as both synchronous and asynchronous neuron-like structures, where the firing threshold and the form of the output signal, either step-like or spiked, can be controlled by using several operational parameters, including the environment in which the device operates. A detailed study showing how environmental variables, such as relative humidity, ambient light and temperature, affect device operation is presented.

  18. Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Sapkota, Keshab R.; Chen, Weimin; Maloney, F. Scott; Poudyal, Uma; Wang, Wenyong

    2016-10-01

    We report magnetoresistance (MR) manipulation and sign reversal induced by carrier concentration modulation in Mn-doped ZnO nanowires. At low temperatures positive magnetoresistance was initially observed. When the carrier concentration was increased through the application of a gate voltage, the magnetoresistance also increased and reached a maximum value. However, further increasing the carrier concentration caused the MR to decrease, and eventually an MR sign reversal from positive to negative was observed. An MR change from a maximum positive value of 25% to a minimum negative value of 7% was observed at 5 K and 50 KOe. The observed MR behavior was modeled by considering combined effects of quantum correction to carrier conductivity and bound magnetic polarons. This work could provide important insights into the mechanisms that govern magnetotransport in dilute magnetic oxides, and it also demonstrated an effective approach to manipulating magnetoresistance in these materials that have important spintronic applications.

  19. Hierarchical ZnO Nanowire Growth with Tunable Orientations on Versatile Substrates Using Atomic Layer Deposition Seeding

    SciTech Connect

    Bielinski, Ashley R.; Kazyak, Eric; Schleputz, Christian M.; Jung, Hee Joon; Wood, Kevin N.; Dasgupta, Neil P.

    2015-07-14

    The ability to synthesize semiconductor nanowires with deterministic and tunable control of orientation and morphology on a wide range of substrates, while high precision and repeatability are maintained, is a challenge currently faced for the development of many nanoscale material systems. Here we show that atomic layer deposition (ALD) presents a reliable method of surface and interfacial modification to guide nanowire orientation on a variety of substrate materials and geometries, including high-aspect-ratio, three-dimensional templates. We demonstrate control of the orientation and geometric properties of hydrothermally grown single crystalline ZnO nanowires via the deposition of a ZnO seed layer by ALD. The crystallographic texture and roughness of the seed layer result in tunable preferred nanowire orientations and densities for identical hydrothermal growth conditions. The structural and chemical relationship between the ALD layers and nanowires was investigated with synchrotron X-ray diffraction, high-resolution transmission electron microscopy, and X-ray photoelectron spectroscopy to elucidate the underlying mechanisms of orientation and morphology control. The resulting control parameters were utilized to produce hierarchical nanostructures with tunable properties on a wide range of substrates, including vertical micropillars, paper fibers, porous polymer membranes, and biological substrates. This illustrates the power of ALD for interfacial engineering of heterogeneous material systems at the nanoscale, to provide a highly controlled and scalable seeding method for bottom-up synthesis of integrated nanosystems.

  20. Molten Pb as a catalyst for large-scale growth of highly aligned silicon oxide nanowires

    NASA Astrophysics Data System (ADS)

    Zhang, Jun; Jiang, Feihong; Yang, Yongdong; Li, Jianping

    2007-09-01

    Low melting point metal Pb can be used as an effective catalyst for the large-scale growth of highly aligned silicon oxide nanowire balls. Unlike any previously observed results using Au or Fe as catalyst, the molten Pb-catalyzed vapor-liquid-solid (VLS) growth exhibits many amazing growth phenomena. The scan electron microscopy (SEM) data indicate that the silicon oxide nanowires grow out perpendicularly from the surface of the metal Pb balls. For each ball, numerous nanowires simultaneously nucleate, grow at nearly the same rate and direction, and simultaneously stop growing. The pear-like, flower-like, chrysanthemum-like, and echinus-like SiO 2 nanostructures were formed. A growth model was proposed. The experimental results further expand the low melting point metal-catalyzed VLS mechanism to a broader range.

  1. Preparation of highly aligned silicon oxide nanowires with stable intensive photoluminescence

    NASA Astrophysics Data System (ADS)

    Duraia, El-Shazly M.; Mansurov, Z. A.; Tokmolden, S.; Beall, Gary W.

    2010-02-01

    In this work we report the successful formation of highly aligned vertical silicon oxide nanowires. The source of silicon was from the substrate itself without any additional source of silicon. X-ray measurement demonstrated that our nanowires are amorphous. Photoluminescence measurements were conducted through 18 months and indicated that there is a very good intensive emission peaks near the violet regions. The FTIR measurements indicated the existence of peaks at 463, 604, 795 and a wide peak at 1111 cm -1 and this can be attributed to Si-O-Si and Si-O stretching vibrations. We also report the formation of the octopus-like silicon oxide nanowires and the growth mechanism of these structures was discussed.

  2. Polarization-dependent DANES study on vertically-aligned ZnO nanorods

    NASA Astrophysics Data System (ADS)

    Sun, Chengjun; Park, Chang-In; Jin, Zhenlan; Hwang, In-Hui; Heald, S. M.; Han, Sang-Wook

    2016-05-01

    The local structural and local density of states of vertically-aligned ZnO nanorods are examined by using polarization-dependent diffraction anomalous near edge structure (DANES) measurements from c-oriented ZnO nanorods at the Zn K edge at the geometry of the incident x-ray electric field parallel and perpendicular to the x-ray momentum transfer direction. Orientation-dependent local structures determined by DANES are comparable with polarization- dependent EXAFS results. Unlike other techniques, polarization-dependent DANES can uniquely describe the orientation-dependent local structural properties and the local density of states of a selected element in selected-phased crystals of compounds or mixed-phased structures.

  3. Synthesis of Vertically Aligned ZnO Nanorods on Ni-Based Buffer Layers Using a Thermal Evaporation Process

    NASA Astrophysics Data System (ADS)

    Kuo, Dong-Hau; He, Jheng-Yu; Huang, Ying-Sheng

    2012-03-01

    Uniform, vertically aligned ZnO nanorods have been grown mainly on Au-coated and ZnO-coated sapphire substrates, ZnO- and GaN-coated substrates, or self-catalyzing substrates. Conventionally, Ni-coated substrates have resulted in thick rods with diameter more than 250 nm, rods with nonuniform distribution in diameter, or rods with an alignment problem. In the best result in this paper, slender, uniform, vertically aligned, solely UV-emitting ZnO nanorods with diameter of 110 ± 25 nm and length of 30 ± 10 μm have been successfully grown at 700°C for 2 h on sapphire substrates covered with Ni-based buffer layers by using metallic zinc and oxygen as reactants. Scanning electron microscopy and room-temperature photoluminescence have been used to investigate the effects of process conditions on the slenderness and vertical alignment of the ZnO rods. To develop the desired ZnO nanorods, etched sapphire substrates, a second metallic Sn buffer layer on top of a spin-coated nickel oxide layer, polyvinyl alcohol binder at 10% concentration in solution of iron nitrate, and pyrolysis and reduction reactions were involved. Defect photoemission for thick ZnO rods is attributed to insufficient oxygen supply during the growth process with fixed oxygen flow rate.

  4. Effects of Ni-coating on ZnO nanowires: A Raman scattering study

    NASA Astrophysics Data System (ADS)

    Filippov, S.; Wang, X. J.; Devika, M.; Koteeswara Reddy, N.; Tu, C. W.; Chen, W. M.; Buyanova, I. A.

    2013-06-01

    Structural properties of ZnO/Ni core/shell nanowires (NWs) are studied in detail by means of Raman spectroscopy. It is shown that formation of the Ni shell leads to passivation of surface states responsible for the observed enhanced intensity of the A1(LO) Raman mode of the bare ZnO NWs. It also causes appearance of 490 cm-1 and 710 cm-1 modes that are attributed to local vibrational modes of a defect/impurity (or defects/impurities). This defect is concluded to be preferably formed in annealed ZnO/Ni NWs and is unlikely to contain a Ni atom, as the same Raman modes were also reported for the Ni-free ZnO nanostructures. From our resonant Raman studies, we also show that the ZnO/Ni core/shell NWs exhibit an enhanced Raman signal with a multiline structure involving A1(LO). This observation is attributed to combined effects of an enhanced Fröhlich interaction at the ZnO/Ni heterointerface and coupling of the scattered light with local surface plasmons excited in the Ni shell. The plasmonic effect is also suggested to allow detection of carbon-related species absorbed at the surface of a single ZnO/Ni NW, promising for applications of such structures as efficient nano-sized gas sensors.

  5. Towards a full integration of vertically aligned silicon nanowires in MEMS using silane as a precursor.

    PubMed

    Gadea, G; Morata, A; Santos, J D; Dávila, D; Calaza, C; Salleras, M; Fonseca, L; Tarancón, A

    2015-05-15

    Silicon nanowires present outstanding properties for electronics, energy, and environmental monitoring applications. However, their integration into microelectromechanical systems (MEMS) is a major issue so far due to low compatibility with mainstream technology, which complicates patterning and controlled morphology. This work addresses the growth of 〈111〉 aligned silicon nanowire arrays fully integrated into standard MEMS processing by means of the chemical vapor deposition-vapor liquid solid method (CVD-VLS) using silane as a precursor. A reinterpretation of the galvanic displacement method is presented for selectively depositing gold nanoparticles of controlled size and shape. Moreover, a comprehensive analysis of the effects of synthesis temperature and pressure on the growth rate and alignment of nanowires is presented for the most common silicon precursor, i.e., silane. Compared with previously reported protocols, the redefined galvanic displacement together with a silane-based CVD-VLS growth methodology provides a more standard and low-temperature (<650 °C) synthesis scheme and a compatible route to reliably grow Si nanowires in MEMS for advanced applications.

  6. Towards a full integration of vertically aligned silicon nanowires in MEMS using silane as a precursor.

    PubMed

    Gadea, G; Morata, A; Santos, J D; Dávila, D; Calaza, C; Salleras, M; Fonseca, L; Tarancón, A

    2015-05-15

    Silicon nanowires present outstanding properties for electronics, energy, and environmental monitoring applications. However, their integration into microelectromechanical systems (MEMS) is a major issue so far due to low compatibility with mainstream technology, which complicates patterning and controlled morphology. This work addresses the growth of 〈111〉 aligned silicon nanowire arrays fully integrated into standard MEMS processing by means of the chemical vapor deposition-vapor liquid solid method (CVD-VLS) using silane as a precursor. A reinterpretation of the galvanic displacement method is presented for selectively depositing gold nanoparticles of controlled size and shape. Moreover, a comprehensive analysis of the effects of synthesis temperature and pressure on the growth rate and alignment of nanowires is presented for the most common silicon precursor, i.e., silane. Compared with previously reported protocols, the redefined galvanic displacement together with a silane-based CVD-VLS growth methodology provides a more standard and low-temperature (<650 °C) synthesis scheme and a compatible route to reliably grow Si nanowires in MEMS for advanced applications. PMID:25902702

  7. Towards a full integration of vertically aligned silicon nanowires in MEMS using silane as a precursor

    NASA Astrophysics Data System (ADS)

    Gadea, G.; Morata, A.; Santos, J. D.; Dávila, D.; Calaza, C.; Salleras, M.; Fonseca, L.; Tarancón, A.

    2015-05-01

    Silicon nanowires present outstanding properties for electronics, energy, and environmental monitoring applications. However, their integration into microelectromechanical systems (MEMS) is a major issue so far due to low compatibility with mainstream technology, which complicates patterning and controlled morphology. This work addresses the growth of <111> aligned silicon nanowire arrays fully integrated into standard MEMS processing by means of the chemical vapor deposition-vapor liquid solid method (CVD-VLS) using silane as a precursor. A reinterpretation of the galvanic displacement method is presented for selectively depositing gold nanoparticles of controlled size and shape. Moreover, a comprehensive analysis of the effects of synthesis temperature and pressure on the growth rate and alignment of nanowires is presented for the most common silicon precursor, i.e., silane. Compared with previously reported protocols, the redefined galvanic displacement together with a silane-based CVD-VLS growth methodology provides a more standard and low-temperature (<650 °C) synthesis scheme and a compatible route to reliably grow Si nanowires in MEMS for advanced applications.

  8. Passivation of surface states in the ZnO nanowire with thermally evaporated copper phthalocyanine for hybrid photodetectors

    NASA Astrophysics Data System (ADS)

    Chen, Qi; Ding, Huaiyi; Wu, Yukun; Sui, Mengqiao; Lu, Wei; Wang, Bing; Su, Wenming; Cui, Zheng; Chen, Liwei

    2013-05-01

    The adsorption of O2/H2O molecules on the ZnO nanowire (NW) surface results in the long lifetime of photo-generated carriers and thus benefits ZnO NW-based ultraviolet photodetectors by suppressing the dark current and improving the photocurrent gain, but the slow adsorption process also leads to slow detector response time. Here we show that a thermally evaporated copper phthalocyanine film is effective in passivating surface trap states of ZnO NWs. As a result, the organic/inorganic hybrid photodetector devices exhibit simultaneously improved photosensitivity and response time. This work suggests that it could be an effective way in interfacial passivation using organic/inorganic hybrid structures.The adsorption of O2/H2O molecules on the ZnO nanowire (NW) surface results in the long lifetime of photo-generated carriers and thus benefits ZnO NW-based ultraviolet photodetectors by suppressing the dark current and improving the photocurrent gain, but the slow adsorption process also leads to slow detector response time. Here we show that a thermally evaporated copper phthalocyanine film is effective in passivating surface trap states of ZnO NWs. As a result, the organic/inorganic hybrid photodetector devices exhibit simultaneously improved photosensitivity and response time. This work suggests that it could be an effective way in interfacial passivation using organic/inorganic hybrid structures. Electronic supplementary information (ESI) available: Experimental section includes materials growth, device fabrication, device characterization and the measurement process. Supplementary results and discussion includes electrical properties of the ZnO NW/CuPc device, fitting functions and parameters of photoresponse. See DOI: 10.1039/c3nr01088k

  9. Energy Level Alignment at Aqueous GaN and ZnO Interfaces

    NASA Astrophysics Data System (ADS)

    Hybertsen, Mark S.; Kharche, Neerav; Muckerman, James T.

    2014-03-01

    Electronic energy level alignment at semiconductor-electrolyte interfaces is fundamental to electrochemical activity. Motivated in particular by the search for new materials that can be more efficient for photocatalysis, we develop a first principles method to calculate this alignment at aqueous interfaces and demonstrate it for the specific case of non-polar GaN and ZnO interfaces with water. In the first step, density functional theory (DFT) based molecular dynamics is used to sample the physical interface structure and to evaluate the electrostatic potential step at the interface. In the second step, the GW approach is used to evaluate the reference electronic energy level separately in the bulk semiconductor (valence band edge energy) and in bulk water (the 1b1 energy level), relative to the internal electrostatic energy reference. Use of the GW approach naturally corrects for errors inherent in the use of Kohn-Sham energy eigenvalues to approximate the electronic excitation energies in each material. With this predicted interface alignment, specific redox levels in water, with potentials known relative to the 1b1 level, can then be compared to the semiconductor band edge positions. Our results will be discussed in the context of experiments in which photoexcited GaN and ZnO drive the hydrogen evolution reaction. Research carried out at Brookhaven National Laboratory under Contract No. DE-AC02-98CH10886 with the U.S. Department of Energy.

  10. Alignment, rotation, and spinning of single plasmonic nanoparticles and nanowires using polarization dependent optical forces.

    PubMed

    Tong, Lianming; Miljković, Vladimir D; Käll, Mikael

    2010-01-01

    We demonstrate optical alignment and rotation of individual plasmonic nanostructures with lengths from tens of nanometers to several micrometers using a single beam of linearly polarized near-infrared laser light. Silver nanorods and dimers of gold nanoparticles align parallel to the laser polarization because of the high long-axis dipole polarizability. Silver nanowires, in contrast, spontaneously turn perpendicular to the incident polarization and predominantly attach at the wire ends, in agreement with electrodynamics simulations. Wires, rods, and dimers all rotate if the incident polarization is turned. In the case of nanowires, we demonstrate spinning at an angular frequency of approximately 1 Hz due to transfer of spin angular momentum from circularly polarized light. PMID:20030391

  11. A Robust Highly Aligned DNA Nanowire Array-Enabled Lithography for Graphene Nanoribbon Transistors.

    PubMed

    Kang, Seok Hee; Hwang, Wan Sik; Lin, Zhiqun; Kwon, Se Hun; Hong, Suck Won

    2015-12-01

    Because of its excellent charge carrier mobility at the Dirac point, graphene possesses exceptional properties for high-performance devices. Of particular interest is the potential use of graphene nanoribbons or graphene nanomesh for field-effect transistors. Herein, highly aligned DNA nanowire arrays were crafted by flow-assisted self-assembly of a drop of DNA aqueous solution on a flat polymer substrate. Subsequently, they were exploited as "ink" and transfer-printed on chemical vapor deposited (CVD)-grown graphene substrate. The oriented DNA nanowires served as the lithographic resist for selective removal of graphene, forming highly aligned graphene nanoribbons. Intriguingly, these graphene nanoribbons can be readily produced over a large area (i.e., millimeter scale) with a high degree of feature-size controllability and a low level of defects, rendering the fabrication of flexible two terminal devices and field-effect transistors.

  12. Aligned AlN nanowires by self-organized vapor-solid growth

    NASA Astrophysics Data System (ADS)

    Yazdi, G. R.; Persson, P. O. Å.; Gogova, D.; Fornari, R.; Hultman, L.; Syväjärvi, M.; Yakimova, R.

    2009-12-01

    Highly oriented AlN single crystal nanowires with aspect ratio up to 600, diameter in the range of 40-500 nm, and 100 µm lengths, have been synthesized via a vapor-solid growth mechanism. The results were obtained at 1750 °C and 850 mbar nitrogen pressure on vicinal SiC substrates pretreated by SiC sublimation epitaxy in order to attain distinguishable terraces. It was found that the nanowires change in thickness after they have reached a critical length, and this fact contributes to an understanding of the growth mechanism of AlN nanowires. The nanowires are hexagonally shaped and perfectly aligned along the [0001] direction with a small tilt given by the substrate vicinality. Under nitrogen excess a preferential growth along the c-axis of the wurtzite structure takes place while below some critical value of nitrogen pressure the growth mode switches to lateral. The AlN nanowires are shown to have a dislocation free wurtzite crystal structure. Some possible applications are discussed.

  13. Aligned AlN nanowires by self-organized vapor-solid growth.

    PubMed

    Yazdi, G R; Persson, P O A; Gogova, D; Fornari, R; Hultman, L; Syväjärvi, M; Yakimova, R

    2009-12-01

    Highly oriented AlN single crystal nanowires with aspect ratio up to 600, diameter in the range of 40-500 nm, and 100 microm lengths, have been synthesized via a vapor-solid growth mechanism. The results were obtained at 1750 degrees C and 850 mbar nitrogen pressure on vicinal SiC substrates pretreated by SiC sublimation epitaxy in order to attain distinguishable terraces. It was found that the nanowires change in thickness after they have reached a critical length, and this fact contributes to an understanding of the growth mechanism of AlN nanowires. The nanowires are hexagonally shaped and perfectly aligned along the [0001] direction with a small tilt given by the substrate vicinality. Under nitrogen excess a preferential growth along the c-axis of the wurtzite structure takes place while below some critical value of nitrogen pressure the growth mode switches to lateral. The AlN nanowires are shown to have a dislocation free wurtzite crystal structure. Some possible applications are discussed.

  14. Photovoltaic performance of Gallium-doped ZnO thin film/Si nanowires heterojunction diodes

    NASA Astrophysics Data System (ADS)

    Akgul, Guvenc; Aksoy Akgul, Funda; Emrah Unalan, Husnu; Turan, Rasit

    2016-04-01

    In this work, photovoltaic performance of Ga-doped ZnO thin film/Si NWs heterojunction diodes was investigated. Highly dense and vertically well-aligned Si NW arrays were successfully synthesised on a p-type (1 0 0)-oriented Si wafer through cost-effective metal-assisted chemical etching technique. Ga-doped ZnO thin films were deposited onto Si NWs via radio frequency magnetron sputtering to construct three-dimensional heterostructures. Photovoltaic characteristics of the fabricated diodes were determined with current density (J)-voltage (V) measurements under simulated solar irradiation of AM 1.5 G. The optimal open-circuit voltage, short-circuit current density, fill factor and power conversion efficiency were found to be 0.37 V, 3.30 mA cm-2, 39.00 and 0.62%, respectively. Moreover, photovoltaic diodes exhibited relatively high external quantum efficiency over the broadband wavelengths between 350 and 1100 nm interval of the spectrum. The observed photovoltaic performance in this study clearly indicates that the investigated device structure composed of Ga-doped ZnO thin film/Si NWs heterojunctions could facilitate an alternative pathway for optoelectronic applications in future, and be a promising alternative candidate for high-performance low-cost new-generation photovoltaic diodes.

  15. Large-area alignment of tungsten oxide nanowires over flat and patterned substrates for room-temperature gas sensing.

    PubMed

    Cheng, Wei; Ju, Yanrui; Payamyar, Payam; Primc, Darinka; Rao, Jingyi; Willa, Christoph; Koziej, Dorota; Niederberger, Markus

    2015-01-01

    Alignment of nanowires over a large area of flat and patterned substrates is a prerequisite to use their collective properties in devices such as gas sensors. In this work, uniform single-crystalline ultrathin W18 O49 nanowires with diameters less than 2 nm and aspect ratios larger than 100 have been synthesized, and, despite their flexibility, assembled into thin films with high orientational order over a macroscopic area by the Langmuir-Blodgett technique. Alignment of the tungsten oxide nanowires was also possible on top of sensor substrates equipped with electrodes. Such sensor devices were found to exhibit outstanding sensitivity to H2 at room temperature. PMID:25412600

  16. Microstructural and optical properties of nanocrystalline ZnO deposited onto vertically aligned carbon nanotubes by physical vapor deposition

    SciTech Connect

    Borkar, Tushar; Chang, Won Seok; Hwang, Jun Yeon; Shepherd, Nigel D.; Banerjee, Rajarshi

    2012-10-15

    Nanocrystalline ZnO films with thicknesses of 5 nm, 10 nm, 20 nm, and 50 nm were deposited via magnetron sputtering onto the surface of vertically aligned multi-walled carbon nanotubes (MWCNTs). The ZnO/CNTs heterostructures were characterized by scanning electron microscopy, high resolution transmission electron microscopy, and X-ray diffraction studies. No structural degradation of the CNTs was observed and photoluminescence (PL) measurements of the nanostructured ZnO layers show that the optical properties of these films are typical of ZnO deposited at low temperatures. The results indicate that magnetron sputtering is a viable technique for growing heterostructures and depositing functional layers onto CNTs.

  17. Epitaxial growth of ZnO Nanodisks with large exposed polar facets on nanowire arrays for promoting photoelectrochemical water splitting.

    PubMed

    Chen, Haining; Wei, Zhanhua; Yan, Keyou; Bai, Yang; Zhu, Zonglong; Zhang, Teng; Yang, Shihe

    2014-11-01

    Single-crystalline and branched 1D arrays, ZnO nanowires/nanodisks (NWs/NDs) arrays, are fabricated to significantly enhance the performance of photoelectrochemical (PEC) water splitting. The epitaxial growth of the ZnO NDs with large exposed polar facets on ZnO NWs exhibits a laminated structure, which dramatically increases the light scattering capacity of the NWs arrays, especially in the wavelength region around 400 nm. The ND branching of the 1D arrays in the epitaxial fashion not only increase surface area and light utilization, but also support fast charge transport, leading to the considerable increase of photocurrent. Moreover, the tiny size NDs can facilitate charge separation and reduce charge recombination, while the large exposed polar facets of NDs reduce the external potential bias needed for water splitting. These advantages land the ZnO NWs/NDs arrays a four times higher power conversion efficiency than the ZnO NWs arrays. By sensitizing the ZnO NWs/NDs with CdS and CdSe quantum dots, the PEC performance can be further improved. This work advocates a trunk/leaf in forest concept for the single-crystalline NWs/NDs in array with enlarged exposure of polar facets, which opens the way for optimizing light harvesting and charge separation and transport, and thus the PEC water splitting. PMID:24990800

  18. Epitaxial growth of ZnO Nanodisks with large exposed polar facets on nanowire arrays for promoting photoelectrochemical water splitting.

    PubMed

    Chen, Haining; Wei, Zhanhua; Yan, Keyou; Bai, Yang; Zhu, Zonglong; Zhang, Teng; Yang, Shihe

    2014-11-01

    Single-crystalline and branched 1D arrays, ZnO nanowires/nanodisks (NWs/NDs) arrays, are fabricated to significantly enhance the performance of photoelectrochemical (PEC) water splitting. The epitaxial growth of the ZnO NDs with large exposed polar facets on ZnO NWs exhibits a laminated structure, which dramatically increases the light scattering capacity of the NWs arrays, especially in the wavelength region around 400 nm. The ND branching of the 1D arrays in the epitaxial fashion not only increase surface area and light utilization, but also support fast charge transport, leading to the considerable increase of photocurrent. Moreover, the tiny size NDs can facilitate charge separation and reduce charge recombination, while the large exposed polar facets of NDs reduce the external potential bias needed for water splitting. These advantages land the ZnO NWs/NDs arrays a four times higher power conversion efficiency than the ZnO NWs arrays. By sensitizing the ZnO NWs/NDs with CdS and CdSe quantum dots, the PEC performance can be further improved. This work advocates a trunk/leaf in forest concept for the single-crystalline NWs/NDs in array with enlarged exposure of polar facets, which opens the way for optimizing light harvesting and charge separation and transport, and thus the PEC water splitting.

  19. Passivation of surface states in the ZnO nanowire with thermally evaporated copper phthalocyanine for hybrid photodetectors.

    PubMed

    Chen, Qi; Ding, Huaiyi; Wu, Yukun; Sui, Mengqiao; Lu, Wei; Wang, Bing; Su, Wenming; Cui, Zheng; Chen, Liwei

    2013-05-21

    The adsorption of O2/H2O molecules on the ZnO nanowire (NW) surface results in the long lifetime of photo-generated carriers and thus benefits ZnO NW-based ultraviolet photodetectors by suppressing the dark current and improving the photocurrent gain, but the slow adsorption process also leads to slow detector response time. Here we show that a thermally evaporated copper phthalocyanine film is effective in passivating surface trap states of ZnO NWs. As a result, the organic/inorganic hybrid photodetector devices exhibit simultaneously improved photosensitivity and response time. This work suggests that it could be an effective way in interfacial passivation using organic/inorganic hybrid structures.

  20. Piezotronic Effect Enhanced Label-Free Detection of DNA Using a Schottky-Contacted ZnO Nanowire Biosensor.

    PubMed

    Cao, Xiaotao; Cao, Xia; Guo, Huijuan; Li, Tao; Jie, Yang; Wang, Ning; Wang, Zhong Lin

    2016-08-23

    A sensitive and in situ selective label-free DNA sensor based on a Schottky-contacted ZnO nanowire (NW) device has been developed and utilized to detect the human immunodeficiency virus 1 gene in this work. Piezotronic effect on the performance of the DNA sensor is studied by measuring its output current under different compressive strains and target complementary DNA concentrations. By applying a -0.59% compressive strain to a ZnO NW-based DNA sensor, the relative current response is greatly enhanced by 454%. A theoretical model is proposed to explain the observed behaviors of the DNA sensor. This study provides a piezotronically modified method to effectively improve the overall performance of the Schottky-contacted ZnO NW-based DNA sensor.

  1. Challenges in the simulation of dye-sensitized ZnO solar cells: quantum confinement, alignment of energy levels and excited state nature at the dye/semiconductor interface.

    PubMed

    Amat, Anna; De Angelis, Filippo

    2012-08-14

    We report a first principles density functional theory/time-dependent density functional theory (DFT/TDDFT) computational investigation on a prototypical perylene dye anchored to realistic ZnO nanostructures, approaching the size of the ZnO nanowires used in dye-sensitized solar cells devices. DFT calculations were performed on (ZnO)(n) clusters of increasing size, with n up to 222, of 1.3 × 1.5 × 3.4 nm dimensions, and for the related dye-sensitized models. We show that quantum confinement in the ZnO nanostructures substantially affects the dye/semiconductor alignment of energy levels, with smaller ZnO models providing unfavourable electron injection. An increasing broadening of the dye LUMO is found moving to larger substrates, substantially contributing to the interfacial electronic coupling. TDDFT excited state calculations for the investigated dye@(ZnO)(222) system are fully consistent with experimental data, quantitatively reproducing the red-shift and broadening of the visible absorption spectrum observed for the ZnO-anchored dye compared to the dye in solution. TDDFT calculations on the fully interacting system also introduce a contribution to the dye/semiconductor admixture, due to configurational excited state mixing. Our results highlight the importance of quantum confinement in dye-sensitized ZnO interfaces, and provide the fundamental insight lying at the heart of the associated DSC devices. PMID:22743544

  2. 2D XANES-XEOL mapping: observation of enhanced band gap emission from ZnO nanowire arrays

    NASA Astrophysics Data System (ADS)

    Wang, Zhiqiang; Guo, Xiaoxuan; Sham, Tsun-Kong

    2014-05-01

    Using 2D XANES-XEOL spectroscopy, it is found that the band gap emission of ZnO nanowire arrays is substantially enhanced i.e. that the intensity ratio between the band gap and defect emissions increases by more than an order of magnitude when the excitation energy is scanned across the O K-edge. Possible mechanisms are discussed.Using 2D XANES-XEOL spectroscopy, it is found that the band gap emission of ZnO nanowire arrays is substantially enhanced i.e. that the intensity ratio between the band gap and defect emissions increases by more than an order of magnitude when the excitation energy is scanned across the O K-edge. Possible mechanisms are discussed. Electronic supplementary information (ESI) available: XEOL spectra with different excitation energies. X-ray attenuation length vs. photon energy. Details of surface defects in ZnO NWs. The second O K-edge and Zn L-edge 2D XANES-XEOL maps. Comparison of the first and second TEY at O K-edge and Zn L-edge scans, respectively. Raman spectra of the ZnO NWs with different IBGE/IDE ratios. See DOI: 10.1039/c4nr01049c

  3. Optical and electrical properties of ZnO nanowires grown on aluminium foil by non-catalytic thermal evaporation

    NASA Astrophysics Data System (ADS)

    Umar, Ahmad; Kim, Byoung-Kye; Kim, Ju-Jin; Hahn, Y. B.

    2007-05-01

    Well-crystallized ZnO nanowires were grown in large quantity on aluminium foil, by a non-catalytic thermal evaporation method using metallic zinc powder in the presence of oxygen at low temperature. Detailed structural and optical characterizations confirmed that the as-grown nanowires were highly crystalline, possessed a wurtzite hexagonal phase, had grown along the c-axis direction and exhibited excellent optical properties. The electrical characteristics of an individual nanowire were observed in air and vacuum by fabricating field-effect transistor (FET) devices. The transistors turned on typically between -5 and 0 V in ambient air. However, a large threshold voltage (Vth) shift, ~5 V, towards negative gate bias was observed in high vacuum. The shift of Vth is believed to be related to the charge transfer from the ZnO nanowire surface to the physically adsorbed OH or oxygen. Moreover, the fabricated FETs show a high conductivity ON/OFF ratio of about ~102 with ultraviolet (UV) light and hence provide an effective way to use these devices in nanoscale UV detectors and optoelectronic switches.

  4. Enhanced non-volatile resistive switching in suspended single-crystalline ZnO nanowire with controllable multiple states

    NASA Astrophysics Data System (ADS)

    Zhang, Rui; Pang, Wei; Zhang, Qing; Chen, Yan; Chen, Xuejiao; Feng, Zhihong; Yang, Jianhua; Zhang, Daihua

    2016-08-01

    Resistive switching nanostructures are a promising candidate for next-generation non-volatile memories. In this report, we investigate the switching behaviors of single-crystalline ZnO nanowires suspended in air. They exhibit significantly higher current density, lower switching voltage, and more pronounced multiple conductance states compared to nanowires in direct contact with substrate. We attribute the effect to enhanced Joule heating efficiency, reduced surface scattering, and more significantly, the positive feedback established between the current density and local temperature in the suspended nanowires. The proposed mechanism has been quantitatively examined by finite element simulations. We have also demonstrated an innovative approach to initiating the current–temperature mutual enhancement through illumination by ultraviolet light, which further confirmed our hypothesis and enabled even greater enhancement. Our work provides further insight into the resistive switching mechanism of single-crystalline one-dimensional nanostructures, and suggests an effective means of performance enhancement and device optimization.

  5. Field-emission properties of patterned ZnO nanowires on 2.5D MEMS substrate

    NASA Astrophysics Data System (ADS)

    Park, Seung-Beum; Kim, Byeong-Guk; Kim, Jeong-Yeon; Jung, Tae-Hwan; Lim, Dong-Gun; Park, Jae-Hwan; Park, Jae-Gwan

    2011-01-01

    We fabricated a nanowire-based field-emission display (FED) device on a 2.5D substrate using a photolithography, lift-off, thermal-evaporation, and plasma-etching process. We first fabricated a 3×3 array of microholes (diameter = 400 μm and depth = 50 μm) on a Si substrate and fabricated ZnO nanowires inside the microholes by using a thermal CVD process. The field-emission pattern image of the 3×3 array of microholes was clearly apparent. The threshold emission field was ca. 5.6 V/μm and we obtained considerable brightness when the applied voltage was 1900 V (i.e. 6.3 V/μm). Because the fabrication processes used in this study are standard semiconductor fabrication routes, the study suggests the feasibility of mass producing a nanowire-based FED device.

  6. Enhanced non-volatile resistive switching in suspended single-crystalline ZnO nanowire with controllable multiple states

    NASA Astrophysics Data System (ADS)

    Zhang, Rui; Pang, Wei; Zhang, Qing; Chen, Yan; Chen, Xuejiao; Feng, Zhihong; Yang, Jianhua; Zhang, Daihua

    2016-08-01

    Resistive switching nanostructures are a promising candidate for next-generation non-volatile memories. In this report, we investigate the switching behaviors of single-crystalline ZnO nanowires suspended in air. They exhibit significantly higher current density, lower switching voltage, and more pronounced multiple conductance states compared to nanowires in direct contact with substrate. We attribute the effect to enhanced Joule heating efficiency, reduced surface scattering, and more significantly, the positive feedback established between the current density and local temperature in the suspended nanowires. The proposed mechanism has been quantitatively examined by finite element simulations. We have also demonstrated an innovative approach to initiating the current-temperature mutual enhancement through illumination by ultraviolet light, which further confirmed our hypothesis and enabled even greater enhancement. Our work provides further insight into the resistive switching mechanism of single-crystalline one-dimensional nanostructures, and suggests an effective means of performance enhancement and device optimization.

  7. Effects of precursor concentration on the properties of ZnO nanowires grown on (1-102) r-plane sapphire substrates by hydrothermal synthesis.

    PubMed

    Mun, D-H; Bak, S J; Ha, J-S; Lee, H-J; Lee, J K; Lee, S H; Moon, Y B

    2014-08-01

    In this study, we grew ZnO nanowires hydrothermally on (1-102) r-plane sapphire substrates in an aqueous solution which contained zinc nitrate hexahydrate and hexamethylenetetramine (HMT) at 90 °C. First, the AZO seed layer of 80 nm thickness was deposited on the r-plane sapphire substrate by a radio frequency magnetron sputter. After that, we grew the ZnO nanowires on the seed layer by changing the precursor concentration of the aqueous solution from 0.025 M to 0.01 M. When the molar concentration of the precursor was changed, the diameter, length, density and number of ZnO nanowires also changed significantly: diameter, length and density increased with increasing molar concentration but the number of ZnO nanowires decreased. The ZnO nanowires grown at the higher molar concentration tended to grow along with the c-axis direction, as revealed by atomic force microscope and X-ray diffraction peaks. Furthermore, the PL spectra measured at room-temperature revealed a UV emission of 380 nm which can be attributed to the radiative recombination of free and bound excitons (Near Band edge Emission). The NBE emission was also increased with increasing molar concentration. PMID:25936038

  8. Versatile Particle-Based Route to Engineer Vertically Aligned Silicon Nanowire Arrays and Nanoscale Pores.

    PubMed

    Elnathan, Roey; Isa, Lucio; Brodoceanu, Daniel; Nelson, Adrienne; Harding, Frances J; Delalat, Bahman; Kraus, Tobias; Voelcker, Nicolas H

    2015-10-28

    Control over particle self-assembly is a prerequisite for the colloidal templating of lithographical etching masks to define nanostructures. This work integrates and combines for the first time bottom-up and top-down approaches, namely, particle self-assembly at liquid-liquid interfaces and metal-assisted chemical etching, to generate vertically aligned silicon nanowire (VA-SiNW) arrays and, alternatively, arrays of nanoscale pores in a silicon wafer. Of particular importance, and in contrast to current techniques, including conventional colloidal lithography, this approach provides excellent control over the nanowire or pore etching site locations and decouples nanowire or pore diameter and spacing. The spacing between pores or nanowires is tuned by adjusting the specific area of the particles at the liquid-liquid interface before deposition. Hence, the process enables fast and low-cost fabrication of ordered nanostructures in silicon and can be easily scaled up. We demonstrate that the fabricated VA-SiNW arrays can be used as in vitro transfection platforms for transfecting human primary cells.

  9. Electrical characteristics and rectification performance of wet chemically synthesized vertically aligned n-ZnO nanowire/p-Si heterojunction

    NASA Astrophysics Data System (ADS)

    Gayen, R. N.; Bhattacharyya, S. R.

    2016-03-01

    Vertically well-aligned n-ZnO nanowire (NW) thin films were deposited onto p-Si substrates by a two-step wet chemical technique to form a p-n heterojunction diode. The morphological and structural characteristics of the ZnO NW performed by scanning electron microscopy (SEM) and x-ray diffraction (XRD) revealed well-aligned h-ZnO NW with a wurtzite structure. A direct optical band gap of 3.30 eV was calculated from the transmittance trace obtained using a UV-VIS-NIR spectrophotometer. The electrical characteristics of the heterojunction diode were studied by capacitance-voltage (C-V) measurement at room temperature, and current-voltage-temperature (I-V-T) measurements performed in the 300-400 K range. The C-V measurements yield a carrier concentration of 1.3  ×  1016 c.c.-1 for the ZnO NW thin film. The ideality factor (n) was found to decrease, while the barrier height (φ b0) increased with the increase in temperature, when calculated using a thermionic emission model from the non-linear I-V-T plots. The series resistance (R s) calculated by the Cheung-Cheung method decreased with the increase in temperature. The mean barrier height (0.718 eV) and modified Richardson constant (28.4 A cm-2 K-2) calculated using a Gaussian distribution of barrier heights (considering barrier height inhomogeneity) were closer to the theoretical value than those calculated from the linear approximation of the ln(I s/T 2) versus 1000/T plot. The variation of the density of interface states with interface state energy was also studied. The n-ZnO NW/p-Si heterojunction diode performed very good half wave rectification in the frequency range 50 Hz-10 kHz, when a sinusoidal ac voltage of amplitude 4.5 V was applied across it.

  10. Surface defects on ZnO nanowires: implications for design of sensors

    NASA Astrophysics Data System (ADS)

    Spencer, Michelle J. S.; Wong, Kester W. J.; Yarovsky, Irene

    2012-08-01

    Surface defects are commonly believed to be fundamentally important to gas-sensor performance. We examine the effect of gas coverage and ethanol orientation on its adsorption on the stoichiometric and oxygen deficient (1 0\\bar {1}0) nanowire surface. Our density functional theory calculations show that ethanol adsorbs in multiple stable configurations at coverages between 1/4 and 1 ML, highlighting the ability of ZnO to detect ethanol. Ethanol prefers to bind to a surface Zn via the adsorbate oxygen atom and, if a surface oxygen atom is in close proximity, the molecule is further stabilized by formation of a hydrogen bond between the hydrogen of the hydroxyl group and the surface oxygen. Two primary adsorption configurations were identified and have different binding strengths that could be distinguished experimentally by the magnitude of their OH stretching frequency. Our findings show that ethanol adsorbed on the oxygen deficient ZnO(1 0\\bar {1}0) surface has a reduced binding strength. This is due to either the lack of a hydrogen bond (due to a deficiency in surface oxygen) or to surface reconstruction that occurs on the defect surface that weakens the hydrogen bond interaction. This reduced binding on the oxygen deficient surface is in contrast to the defect enhanced gas-sensor interaction for other gases. Despite this difference, ethanol still acts as a reducing gas, donating electrons to the surface and decreasing the band gap. We show that multiple adsorbed ethanol molecules prefer to be orientated parallel to each other to facilitate the hydrogen bonding to the defect-free surface for enhanced interaction.

  11. Control of zinc oxide nanowire array properties with electron-beam lithography templating for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Nicaise, Samuel M.; Cheng, Jayce J.; Kiani, Amirreza; Gradečak, Silvija; Berggren, Karl K.

    2015-02-01

    Hydrothermally synthesized zinc oxide nanowire arrays have been used as nanostructured acceptors in emerging photovoltaic (PV) devices. The nanoscale dimensions of such arrays allow for enhanced charge extraction from PV active layers, but the device performance critically depends on the nanowire array pitch and alignment. In this study, we templated hydrothermally-grown ZnO nanowire arrays via high-resolution electron-beam-lithography defined masks, achieving the dual requirements of high-resolution patterning at a pitch of several hundred nanometers, while maintaining hole sizes small enough to control nanowire array morphology. We investigated several process conditions, including the effect of annealing sputtered and spincoated ZnO seed layers on nanowire growth, to optimize array property metrics—branching from individual template holes and off-normal alignment. We found that decreasing template hole size decreased branching prevalence but also reduced alignment. Annealing seed layers typically improved alignment, and sputtered seed layers yielded nanowire arrays superior to spincoated seed layers. We show that these effects arose from variation in the size of the template holes relative to the ZnO grain size in the seed layer. The quantitative control of branching and alignment of the nanowire array that is achieved in this study will open new paths toward engineering more efficient electrodes to increase photocurrent in nanostructured PVs. This control is also applicable to inorganic nanowire growth in general, nanomechanical generators, nanowire transistors, and surface-energy engineering.

  12. Fabrication and characterization of ZnO nanowires by wet oxidation of Zn thin film deposited on Teflon substrate

    NASA Astrophysics Data System (ADS)

    Farhat, O. F.; Halim, M. M.; Abdullah, M. J.; Ali, M. K. M.; Ahmed, Naser M.; Bououdina, M.

    2015-10-01

    In this study, ZnO nanowires (NWs) were successfully grown for the first time on to Teflon substrate by a wet oxidation of a Zn thin film coated by RF sputtering technique. The sputtered Zn thin film was oxidized at 100 °C for 5 h under water-vapour using a horizontal furnace. This oxidation process transformed Zn thin film into ZnO with wire-like nanostructure. XRD analysis confirms the formation of single nanocrystalline ZnO phase having a low compressive strain. FESEM observations reveal high density of ZnO NWs with diameter ranging from 34 to 52 nm and length about 2.231 μm, which are well distributed in different direction. A flexible ZnO NWs-based metal-semiconductor-metal UV photodetector was fabricated. Photo-response and sensitivity measurements under low power illumination (375 nm, 1.5 mW/cm2) showed a high sensitivity of 2050%, which can be considered a relatively fast response and baseline recovery for UV detection.

  13. Controlling the properties of electrodeposited ZnO nanowire arrays for light emitting diode, photodetector and gas sensor applications

    NASA Astrophysics Data System (ADS)

    Pauporté, T.; Lupan, Oleg; Viana, Bruno; Chow, Lee; Tchernycheva, Maria

    2014-03-01

    Electrochemical deposition (ECD) is a versatile technique for the preparation of ZnO nanowires (NWs) and nanorods (NRs) with high structural and optical quality. The bandgap of the ZnO NWs can be engineered by doping. Depending on the doping cation and concentration, the bandgap is increased or decreased in a controlled manner. The NW arrays have been grown on various substrates. The epitaxial growth on single-crystal conducting substrates has been demonstrated. By using p-type GaN layers, heterostructures have been fabricated with a high rectifying electrical behavior. They have been integrated in low-voltage LEDs emitting in the UV or in the visible region depending on the NW composition. For visible-blind UV-photodetector application, ZnO NW ensembles, electrochemically grown on F:SnO2, have been contacted on their top with a transparent graphene sheet. The photodetector had a responsivity larger than 104 A/W at 1V in the near-UV range. ECD ZnO NWs have also been isolated and electrically connected on their both ends by Al contacts. The obtained nanodevice, made of an individual NW, was shown to be a H2 gas sensor with a high selectivity and sensitivity. Moreover, it was shown that Cd-doping of ZnO NWs significantly improved the performance of the sensor.

  14. Deep-level emission in ZnO nanowires and bulk crystals: Excitation-intensity dependence versus crystalline quality

    SciTech Connect

    Hou, Dongchao; Voss, Tobias; Ronning, Carsten; Menzel, Andreas; Zacharias, Margit

    2014-06-21

    The excitation-intensity dependence of the excitonic near-band-edge emission (NBE) and deep-level related emission (DLE) bands in ZnO nanowires and bulk crystals is studied, which show distinctly different power laws. The behavior can be well explained with a rate-equation model taking into account deep donor and acceptor levels with certain capture cross sections for electrons from the conduction band and different radiative lifetimes. In addition, a further crucial ingredient of this model is the background n-type doping concentration inherent in almost all ZnO single crystals. The interplay of the deep defects and the background free-electron concentration in the conduction band at room temperature reproduces the experimental results well over a wide range of excitation intensities (almost five orders of magnitude). The results demonstrate that for many ZnO bulk samples and nanostructures, the relative intensity R = I{sub NBE}/I{sub DLE} can be adjusted over a wide range by varying the excitation intensity, thus, showing that R should not be taken as an indicator for the crystalline quality of ZnO samples unless absolute photoluminescence intensities under calibrated excitation conditions are compared. On the other hand, the results establish an all-optical technique to determine the relative doping levels in different ZnO samples by measuring the excitation-intensity dependence of the UV and visible luminescence bands.

  15. Adsorption of 2,4,6-trinitrotoluene on the ZnO (21xAF1xAF0) surface: A density functional theory study of the detection mechanism of ZnO nanowire chemiresistors

    NASA Astrophysics Data System (ADS)

    Alnemrat, Sufian; Brett, Gary T.; Hooper, Joseph P.

    2013-10-01

    We report first-principles calculations of the adsorption of 2,4,6-trinitrotoluene (TNT), a prototypical nitroaromatic explosive, on the ZnO (21¯1¯0) surface. This surface is common among ZnO chemiresistors being considered for trace explosive detection. Recent work has achieved 60 ppb detection of TNT using a ZnO nanowire array, but the physical mechanism of sensing is unclear. Our results indicate that TNT strongly chemisorbs via interactions between the oxygen on the nitro groups and surface zinc, creating surface states within the gap. We present a theoretical estimate showing the strong effect of these surface states on the depletion layer of ZnO nanowires.

  16. Adsorption of 2,4,6-trinitrotoluene on the ZnO (2 1 1 0) surface: a density functional theory study of the detection mechanism of ZnO nanowire chemiresistors

    NASA Astrophysics Data System (ADS)

    Alnemrat, Sufian; Brett, Gary; Hooper, Joseph

    2014-03-01

    We report first-principles calculations of the adsorption of 2,4,6-trinitrotoluene (TNT), a prototypical nitroaromatic explosive, on the ZnO (2 1 1 0) surface. This surface is common among ZnO chemiresistors being considered for trace explosive detection. Recent work has achieved 60 ppb detection of TNT using a ZnO nanowire array, but the physical mechanism of sensing is unclear. Our results indicate that TNT strongly chemisorbs via interactions between the oxygen on the nitro groups and surface zinc, creating surface states within the gap. We present a simple theoretical estimate showing the strong effect of these surface states on the depletion layer of ZnO nanowires. This work was supported by the Office of Naval Research grant N00014-12-WX-20884 under the Science for Addressing Asymmetric Explosive Threats program directed by Mike Schlesinger

  17. Epitaxially aligned cuprous oxide nanowires for all-oxide, single-wire solar cells.

    PubMed

    Brittman, Sarah; Yoo, Youngdong; Dasgupta, Neil P; Kim, Si-in; Kim, Bongsoo; Yang, Peidong

    2014-08-13

    As a p-type semiconducting oxide that can absorb visible light, cuprous oxide (Cu2O) is an attractive material for solar energy conversion. This work introduces a high-temperature, vapor-phase synthesis that produces faceted Cu2O nanowires that grow epitaxially along the surface of a lattice-matched, single-crystal MgO substrate. Individual wires were then fabricated into single-wire, all-oxide diodes and solar cells using low-temperature atomic layer deposition (ALD) of TiO2 and ZnO films to form the heterojunction. The performance of devices made from pristine Cu2O wires and chlorine-exposed Cu2O wires was investigated under one-sun and laser illumination. These faceted wires allow the fabrication of well-controlled heterojunctions that can be used to investigate the interfacial properties of all-oxide solar cells. PMID:25014113

  18. Fabrication and Optimization of Vertically Aligned ZnO Nanorod Array-Based UV Photodetectors via Selective Hydrothermal Synthesis

    NASA Astrophysics Data System (ADS)

    Ko, Yeong Hwan; Nagaraju, Goli; Yu, Jae Su

    2015-08-01

    Vertically aligned ZnO nanorod array (NRA)-based ultraviolet (UV) photodetectors (PDs) were successfully fabricated and optimized via a facile hydrothermal process. Using a shadow mask technique, the thin ZnO seed layer was deposited between the patterned Au/Ti electrodes to bridge the electrodes. Thus, both the Au electrodes could be connected by the ZnO seed layer. As the sample was immersed into growth solution and heated at 90 °C, the ZnO NRAs were crystallized and vertically grown on the ZnO seed layer, thus creating a metal-semiconductor-metal PD structure. To investigate the size effect of ZnO NRAs on photocurrent, the PDs were readily prepared with different concentrations of growth solution. For the ZnO NRAs grown at 25 mM of concentration, the PD with 10 μm of channel width (i.e., gap distance between two electrodes) exhibited a high photocurrent of 1.91 × 10-4 A at an applied bias of 10 V under 365 nm of UV light illumination. The PD was optimized by adjusting the channel width. For 15 μm of channel width, a relatively high photocurrent on-off ratio of 37.4 and good current transient characteristics were observed at the same applied bias. These results are expected to be useful for cost-effective and practical UV PD applications.

  19. Nucleation, Growth Mechanism, and Controlled Coating of ZnO ALD onto Vertically Aligned N-Doped CNTs.

    PubMed

    Silva, R M; Ferro, M C; Araujo, J R; Achete, C A; Clavel, G; Silva, R F; Pinna, N

    2016-07-19

    Zinc oxide thin films were deposited on vertically aligned nitrogen-doped carbon nanotubes (N-CNTs) by atomic layer deposition (ALD) from diethylzinc and water. The study demonstrates that doping CNTs with nitrogen is an effective approach for the "activation" of the CNTs surface for the ALD of metal oxides. Conformal ZnO coatings are already obtained after 50 ALD cycles, whereas at lower ALD cycles an island growth mode is observed. Moreover, the process allows for a uniform growth from the top to the bottom of the vertically aligned N-CNT arrays. X-ray photoelectron spectroscopy demonstrates that ZnO nucleation takes place at the N-containing species on the surface of the CNTs by the formation of the Zn-N bonds at the interface between the CNTs and the ZnO film. PMID:27333190

  20. Nucleation, Growth Mechanism, and Controlled Coating of ZnO ALD onto Vertically Aligned N-Doped CNTs.

    PubMed

    Silva, R M; Ferro, M C; Araujo, J R; Achete, C A; Clavel, G; Silva, R F; Pinna, N

    2016-07-19

    Zinc oxide thin films were deposited on vertically aligned nitrogen-doped carbon nanotubes (N-CNTs) by atomic layer deposition (ALD) from diethylzinc and water. The study demonstrates that doping CNTs with nitrogen is an effective approach for the "activation" of the CNTs surface for the ALD of metal oxides. Conformal ZnO coatings are already obtained after 50 ALD cycles, whereas at lower ALD cycles an island growth mode is observed. Moreover, the process allows for a uniform growth from the top to the bottom of the vertically aligned N-CNT arrays. X-ray photoelectron spectroscopy demonstrates that ZnO nucleation takes place at the N-containing species on the surface of the CNTs by the formation of the Zn-N bonds at the interface between the CNTs and the ZnO film.

  1. Vertically aligned ZnO nanorods of high crystalline and optical quality grown by dc reactive sputtering

    NASA Astrophysics Data System (ADS)

    Nandi, R.; Appani, Shravan K.; Major, S. S.

    2016-09-01

    ZnO nanorods were grown on Si and quartz substrates by direct current reactive magnetron sputtering of metallic zinc target in argon–oxygen ambient, without the use of any seed layer or catalyst. A combination of top-down and cross-sectional scanning electron microscopy studies have shown that the substrate temperature critically controls the growth behavior and morphology of ZnO films, eventually resulting in the growth of well aligned and separated ZnO nanorods at substrate temperature of ∼750 °C. High resolution x-ray diffraction studies of ZnO nanorods grown at 750 °C have shown that the nanorods are highly c-axis oriented and vertically aligned perpendicular to both Si and quartz substrates, and display small values of tilt and micro-strain, particularly in the case of Si substrate (1.26° and 4 × 10‑4, respectively). Cross-sectional transmission electron microscopy of ZnO nanorods demonstrates their single-crystalline nature and growth along [0002] direction. Room temperature photoluminescence spectra of ZnO nanorods display extremely high near-band-edge emission and weak defect emission due to point defects, compared to that of the ZnO films grown at lower substrate temperatures. The drastic enhancement of near-band-edge emission of ZnO nanorods (over two orders of magnitude) and strong suppression of defect emission are attributed to their high crystalline quality and absence of interface defects due to lateral coalescence.

  2. Vertically aligned ZnO nanorods of high crystalline and optical quality grown by dc reactive sputtering

    NASA Astrophysics Data System (ADS)

    Nandi, R.; Appani, Shravan K.; Major, S. S.

    2016-09-01

    ZnO nanorods were grown on Si and quartz substrates by direct current reactive magnetron sputtering of metallic zinc target in argon-oxygen ambient, without the use of any seed layer or catalyst. A combination of top-down and cross-sectional scanning electron microscopy studies have shown that the substrate temperature critically controls the growth behavior and morphology of ZnO films, eventually resulting in the growth of well aligned and separated ZnO nanorods at substrate temperature of ˜750 °C. High resolution x-ray diffraction studies of ZnO nanorods grown at 750 °C have shown that the nanorods are highly c-axis oriented and vertically aligned perpendicular to both Si and quartz substrates, and display small values of tilt and micro-strain, particularly in the case of Si substrate (1.26° and 4 × 10-4, respectively). Cross-sectional transmission electron microscopy of ZnO nanorods demonstrates their single-crystalline nature and growth along [0002] direction. Room temperature photoluminescence spectra of ZnO nanorods display extremely high near-band-edge emission and weak defect emission due to point defects, compared to that of the ZnO films grown at lower substrate temperatures. The drastic enhancement of near-band-edge emission of ZnO nanorods (over two orders of magnitude) and strong suppression of defect emission are attributed to their high crystalline quality and absence of interface defects due to lateral coalescence.

  3. Complex tribomechanical characterization of ZnO nanowires: nanomanipulations supported by FEM simulations.

    PubMed

    Vlassov, Sergei; Polyakov, Boris; Oras, Sven; Vahtrus, Mikk; Antsov, Mikk; Šutka, Andris; Smits, Krisjanis; Dorogin, Leonid M; Lõhmus, Rünno

    2016-08-19

    In the present work, we demonstrate a novel approach to nanotribological measurements based on the bending manipulation of hexagonal ZnO nanowires (NWs) in an adjustable half-suspended configuration inside a scanning electron microscope. A pick-and-place manipulation technique was used to control the length of the adhered part of each suspended NW. Static and kinetic friction were found by a 'self-sensing' approach based on the strain profile of the elastically bent NW during manipulation and its Young's modulus, which was separately measured in a three-point bending test with an atomic force microscope. The calculation of static friction from the most bent state was completely reconsidered and a novel more realistic crack-based model was proposed. It was demonstrated that, in contrast to assumptions made in previously published models, interfacial stresses in statically bent NW are highly localized and interfacial strength is comparable to the bending strength of NW measured in respective bending tests. PMID:27377119

  4. Electrochemical Fabrication of ZnO Nanowires in Anodized Aluminum Template Using Cyclic Voltammetry

    NASA Astrophysics Data System (ADS)

    Koney, Shalini Katyayani

    This thesis work studies in detail the fabrication ZnO in Anodic Aluminum Template using Cyclic Voltammetry which is one of the electrochemical deposition methods. In this current work the Aluminum is anodized in Oxalic and Sulphuric acids for different timings with constant current density of 10mA/cm 2. The hexagonal pores were observed after the anodization process. The pores are filled with Zinc using the Cyclic Voltammetry Method of Electrochemical deposition. The samples are then oxidized at 300°C to form the Zinc oxide nanowires. The presence of Zinc is tested using various techniques like Atomic Force Microscopy and Scanning Electron Microscopy which shows the presence of Zinc in the pores. To analytically prove the presence of Zinc Optical Spectroscopy is used. The absorption and reflection spectrums are studied to determine the presence of Zinc Oxide. The Zinc Oxide film was found to have strong absorbance at 0.50 at 340 nm. The thickness of the oxide layer is determined as 354.3 nm. The band gap of the Zinc oxide was found to be at 3.23eV.

  5. Hydrogen-incorporated ZnO nanowire films: stable and high electrical conductivity

    NASA Astrophysics Data System (ADS)

    Kushwaha, Ajay; Aslam, M.

    2013-12-01

    Post-growth hydrogen annealing treatment of highly oriented ZnO nanowire (NW) films (ZnO : H) results in high electrical conductivity (3.7 × 103 S m-1) and fully suppressed defect emission at room temperature. The formation of hydrogen-related vacancy complexes is responsible for the suppression of vacancies ( V_{o}^{+} and V_{o}^{2+} ), leading to a reduction in defect-based emission. ZnO : H NW films show five orders larger stable electrical conductance with a four-fold increment in carrier mobility (7-28 cm2 V-1 s-1). As compared with pristine NWs, the carrier concentration in ZnO : H NW films increases from 1015 to 1019 cm-3, which is in the range of commercial transparent conducting oxides. X-ray photoelectron spectroscopy and secondary ion mass spectrometry analyses reveal stable OH bond formation, which strongly supports the prediction of H doping. These films offer a promising conducting oxide platform for photovoltaic applications.

  6. Effects of hydroxylation and silanization on the surface properties of ZnO nanowires.

    PubMed

    García Núñez, C; Sachsenhauser, M; Blashcke, B; García Marín, A; Garrido, Jose A; Pau, Jose L

    2015-03-11

    Silanization is commonly used to form bonds between inorganic materials and biomolecules as a step in the surface preparation of solid-state biosensors. This work investigates the effects of silanization with amino-propyldiethoxymethylsilane on hydroxylated sidewalls of zinc oxide (ZnO) nanowires (NWs). The surface properties and electrical characteristics of NWs are analyzed by different techniques after their hydroxylation and later silanization. Contact angle measurements reveal a stronger hydrophobic behavior after silanization, and X-ray photoelectron spectroscopy (XPS) results show a reduction of the surface dipole induced by the replacement of the hydroxyl group with the amine terminal group. The lower work function obtained after silanization in contact potential measurements corroborates the attenuation of the surface dipole observed in XPS. Furthermore, the surface band bending of NWs is determined from surface photovoltage measurements upon irradiation with UV light, yielding a 0.5 eV energy in hydroxylated NWs, and 0.18 eV, after silanization. From those results, a reduction in the surface state density of 3.1 × 10(11) cm(-2) is estimated after silanization. The current-voltage (I-V) characteristics measured in a silanized single NW device show a reduction of the resistance, due to the enhancement of the conductive volume inside the NW, which also improves the linearity of the I-V characteristic.

  7. Optical memory effect in ZnO nanowire based organic bulk heterojunction devices

    NASA Astrophysics Data System (ADS)

    Santhanakrishna, Anand Kumar; Takshi, Arash

    2015-09-01

    Due to the required established field to separate photogenerated electrons and holes, the current- voltage (I-V) characteristic in almost all photovoltaic devices in dark is an exponential curve. Upon illumination, the shape of the curve remains almost the same, but the current shifts due to the photocurrent. Also, because of the lack of any storage mechanism, the I-V curve returns to the dark characteristic immediately after light cessation. Here, we are reporting a case study performed on a photo-electric memory effect in an organic bulk hetrojuction device made of ZnO nanowires as the electron transport layer under ambient conditions and within a sealed transfer box filled with nitrogen. The I-V characteristic in dark and light showed a unique change from a rectifying response in dark to a resistive behavior in light. Additionally, after light cessation, a memory effect was observed with a slow transition from the resistive to rectifying response same as the original dark characteristic. The memory effect and its I-V characteristics were tested for the two cases. For practical applications as a photo memory device, further experiments are required to gain a better understanding of the mechanism behind the observed memory effect for the two different cases.

  8. Complex tribomechanical characterization of ZnO nanowires: nanomanipulations supported by FEM simulations

    NASA Astrophysics Data System (ADS)

    Vlassov, Sergei; Polyakov, Boris; Oras, Sven; Vahtrus, Mikk; Antsov, Mikk; Šutka, Andris; Smits, Krisjanis; Dorogin, Leonid M.; Lõhmus, Rünno

    2016-08-01

    In the present work, we demonstrate a novel approach to nanotribological measurements based on the bending manipulation of hexagonal ZnO nanowires (NWs) in an adjustable half-suspended configuration inside a scanning electron microscope. A pick-and-place manipulation technique was used to control the length of the adhered part of each suspended NW. Static and kinetic friction were found by a ‘self-sensing’ approach based on the strain profile of the elastically bent NW during manipulation and its Young’s modulus, which was separately measured in a three-point bending test with an atomic force microscope. The calculation of static friction from the most bent state was completely reconsidered and a novel more realistic crack-based model was proposed. It was demonstrated that, in contrast to assumptions made in previously published models, interfacial stresses in statically bent NW are highly localized and interfacial strength is comparable to the bending strength of NW measured in respective bending tests.

  9. Optical and Electrical Characterization of Quantum Dots Decorated ZnO Nanowires for Energy Conversion

    NASA Astrophysics Data System (ADS)

    Mu, Richard; Mayo, Anthony; Xu, Haiyang; Liu, Yichun

    2014-03-01

    Significant progress has been made recently in understanding optoelectronic properties of metallic and semiconducting quantum dots and their interactions with their surrounding nano-environments. It is shown that nanostructured photovoltaic devices do have clear advantages over the bulk counterparts to address energy challenges facing humanity. They require much less mass, not exclusively limited by materials of choice, and favoring integration for multifunctionality to be able to effectively harvest solar energy by tuning the optical gap and enhancing photon absorption across section through various nanomaterials syntheses. The other challenge is to be able to purposely control and manipulate the energy transfer pathways for particular needs. As for nanostructured photovotaic devices, charge and exciton transports must be carefully evaluated. The knowledge of charge and exciton mobility, coherent and incoherent hopping due to electronic coupling, energy redistribution and partition in may be the critical steps. CdTe and Si functionalized bare ZnO nanowires, and core/shell have been fabricated with Glazing Angle Deposition technique as the model systems. A series materials characterization techniques (confocal Raman, optical, photoluminancence and electrical) have been conducted to provide valuable information about the nanostructure. Results will be presented and discussed along with their scientific implications. NSF-STC DMR-0423914, NSF-CREST HRD-0420516, DOD W911NF-11-1-0156 and -13-1-0153, and China 111 Project

  10. Effects of bias stress on ZnO nanowire field-effect transistors fabricated with organic gate nanodielectrics

    NASA Astrophysics Data System (ADS)

    Ju, Sanghyun; Janes, David B.; Lu, Gang; Facchetti, Antonio; Marks, Tobin J.

    2006-11-01

    The effects of bias stress (gate stress or drain stress) on nanowire field-effect transistor (NW-FET) stability were investigated as a function of stress bias and stress time. The n-channel NW-FETs used a nanoscopic self-assembled organic gate insulator, and each device contained a single ZnO nanowire. Before stress, the off current is limited by a leakage current in the 1nA range, which increases as the gate to source bias becomes increasingly negative. The devices also exhibited significant changes in threshold voltage (Vth) and off current over 500 repeated measurement sweeps. The leakage current was significantly reduced after gate stress, but not after drain stress. Vth variations observed upon successive bias sweeps for devices following gate stress or drain stress were smaller than the Vth variation of unstressed devices. These observations suggest that gate stress and drain stress modify the ZnO nanowire-gate insulator interface, which can reduce electron trapping at the surface and therefore reduce the off current levels and variations in Vth. These results confirm that gate and drain stresses are effective means to stabilize device operation and provide high performance transistors with impressive reliabilities.

  11. Highly polarized light emission by isotropic quantum dots integrated with magnetically aligned segmented nanowires

    SciTech Connect

    Uran, Can; Erdem, Talha; Guzelturk, Burak; Perkgöz, Nihan Kosku; Jun, Shinae; Jang, Eunjoo; Demir, Hilmi Volkan

    2014-10-06

    In this work, we demonstrate a proof-of-concept system for generating highly polarized light from colloidal quantum dots (QDs) coupled with magnetically aligned segmented Au/Ni/Au nanowires (NWs). Optical characterizations reveal that the optimized QD-NW coupled structures emit highly polarized light with an s-to p-polarization (s/p) contrast as high as 15:1 corresponding to a degree of polarization of 0.88. These experimental results are supported by the finite-difference time-domain simulations, which demonstrate the interplay between the inter-NW distance and the degree of polarization.

  12. Metal Catalyst for Low-Temperature Growth of Controlled Zinc Oxide Nanowires on Arbitrary Substrates

    PubMed Central

    Kim, Baek Hyun; Kwon, Jae W.

    2014-01-01

    Zinc oxide nanowires generated by hydrothermal method present superior physical and chemical characteristics. Quality control of the growth has been very challenging and controlled growth is only achievable under very limited conditions using homogeneous seed layers with high temperature processes. Here we show the controlled ZnO nanowire growth on various organic and inorganic materials without the requirement of a homogeneous seed layer and a high temperature process. We also report the discovery of an important role of the electronegativity in the nanowire growth on arbitrary substrates. Using heterogeneous metal oxide interlayers with low-temperature hydrothermal methods, we demonstrate well-controlled ZnO nanowire arrays and single nanowires on flat or curved surfaces. A metal catalyst and heterogeneous metal oxide interlayers are found to determine lattice-match with ZnO and to largely influence the controlled alignment. These findings will contribute to the development of novel nanodevices using controlled nanowires. PMID:24625584

  13. Formation of crystalline InGaO3(ZnO) n nanowires via the solid-phase diffusion process using a solution-based precursor

    NASA Astrophysics Data System (ADS)

    Guo, Yujie; Van Bilzen, Bart; Locquet, Jean Pierre; Seo, Jin Won

    2015-12-01

    One-dimensional single crystalline InGaO3(ZnO) n (IGZO) nanostructures have great potential for various electrical and optical applications. This paper demonstrates for the first time, to our knowledge, a non-vacuum route for the synthesis of IGZO nanowires by annealing ZnO nanowires covered with solution-based IGZO precursor. This method results in nanowires with highly periodic IGZO superlattice structure. The phase transition of IGZO precursor during thermal treatment was systematically studied. Transmission electron microscopy studies reveal that the formation of the IGZO structure is driven by anisotropic inter-diffusion of In, Ga, and Zn atoms, and also by the crystallization of the IGZO precursor. Optical measurements using cathodoluminescence and UV-vis spectroscopy confirm that the nanowires consist of the IGZO compound with wide optical band gap and suppressed luminescence.

  14. Phonon processes in vertically aligned silicon nanowire arrays produced by low-cost all-solution galvanic displacement method

    NASA Astrophysics Data System (ADS)

    Banerjee, Debika; Trudeau, Charles; Gerlein, Luis Felipe; Cloutier, Sylvain G.

    2016-03-01

    The nanoscale engineering of silicon can significantly change its bulk optoelectronic properties to make it more favorable for device integration. Phonon process engineering is one way to enhance inter-band transitions in silicon's indirect band structure alignment. This paper demonstrates phonon localization at the tip of silicon nanowires fabricated by galvanic displacement using wet electroless chemical etching of a bulk silicon wafer. High-resolution Raman micro-spectroscopy reveals that such arrayed structures of silicon nanowires display phonon localization behaviors, which could help their integration into the future generations of nano-engineered silicon nanowire-based devices such as photodetectors and solar cells.

  15. A Pathway to Type-I Band Alignment in Ge/Si Core-Shell Nanowires.

    PubMed

    Kim, Jongseob; Lee, Jung Hoon; Hong, Ki-Ha

    2013-01-01

    We investigate the electronic band structures of Ge/Si core-shell nanowires (CSNWs) and devise a way to realize the electron quantum well at Ge core atoms with first-principles calculations. We reveal that the electronic band engineering by the quantum confinement and the lattice strain can induce the type-I/II band alignment transition, and the resulting type-I band alignment generates the electron quantum well in Ge/Si CSNWs. We also find that the type-I/II transition in Ge/Si CSNWs is highly related to the direct to indirect band gap transition through the analysis of charge density and band structures. In terms of the quantum confinement, for [100] and [111] directional Ge/Si CSNWs, the type-I/II transition can be obtained by decreasing the diameters, whereas a [110] directional CSNW preserves the type-II band alignment even at diameters as small as 1 nm. By applying a compressive strain on [110] CSNWs, the type-I band alignment can be formed. Our results suggest that Ge/Si CSNWs can have the type-I band alignment characteristics by the band structure engineering, which enables both n-type and p-type quantum-well transistors to be fabricated using Ge/Si CSNWs for high-speed logic applications. PMID:26291223

  16. Room temperature-synthesized vertically aligned InSb nanowires: electrical transport and field emission characteristics

    PubMed Central

    2013-01-01

    Vertically aligned single-crystal InSb nanowires were synthesized via the electrochemical method at room temperature. The characteristics of Fourier transform infrared spectrum revealed that in the syntheses of InSb nanowires, energy bandgap shifts towards the short wavelength with the occurrence of an electron accumulation layer. The current–voltage curve, based on the metal–semiconductor–metal model, showed a high electron carrier concentration of 2.0 × 1017 cm−3 and a high electron mobility of 446.42 cm2 V−1 s−1. Additionally, the high carrier concentration of the InSb semiconductor with the surface accumulation layer induced a downward band bending effect that reduces the electron tunneling barrier. Consequently, the InSb nanowires exhibit significant field emission properties with an extremely low turn-on field of 1.84 V μm−1 and an estimative threshold field of 3.36 V μm−1. PMID:23399075

  17. Vertically aligned GaAs nanowires on graphite and few-layer graphene: generic model and epitaxial growth.

    PubMed

    Munshi, A Mazid; Dheeraj, Dasa L; Fauske, Vidar T; Kim, Dong-Chul; van Helvoort, Antonius T J; Fimland, Bjørn-Ove; Weman, Helge

    2012-09-12

    By utilizing the reduced contact area of nanowires, we show that epitaxial growth of a broad range of semiconductors on graphene can in principle be achieved. A generic atomic model is presented which describes the epitaxial growth configurations applicable to all conventional semiconductor materials. The model is experimentally verified by demonstrating the growth of vertically aligned GaAs nanowires on graphite and few-layer graphene by the self-catalyzed vapor-liquid-solid technique using molecular beam epitaxy. A two-temperature growth strategy was used to increase the nanowire density. Due to the self-catalyzed growth technique used, the nanowires were found to have a regular hexagonal cross-sectional shape, and are uniform in length and diameter. Electron microscopy studies reveal an epitaxial relationship of the grown nanowires with the underlying graphitic substrates. Two relative orientations of the nanowire side-facets were observed, which is well explained by the proposed atomic model. A prototype of a single GaAs nanowire photodetector demonstrates a high-quality material. With GaAs being a model system, as well as a very useful material for various optoelectronic applications, we anticipate this particular GaAs nanowire/graphene hybrid to be promising for flexible and low-cost solar cells.

  18. Catalyst-Free Direct Vapor-Phase Growth of Hexagonal ZnO Nanowires on α-Al2O3

    NASA Astrophysics Data System (ADS)

    Hullavarad, S. S.; Hullavarad, N. V.; Vispute, R. D.; Venkatesan, T.; Kilpatrick, S. J.; Ervin, M. H.; Nichols, B.; Wickenden, A. E.

    2010-08-01

    The evolution of ZnO nanowires has been studied under supersaturation of Zn metal species with and without a ZnO thin-film buffer layer on α-Al2O3 deposited by the pulsed laser ablation technique. The nanowires had diameters in the range of 30 nm to 50 nm and lengths in the range of 5 μm to 10 μm with clear hexagonal shape and [000bar{1}] , [10bar{1}1] , and [10bar{1}0] facets. X-ray diffraction (XRD) measurements indicated crystalline properties for the ZnO nanostructures grown on pulsed laser deposition (PLD) ZnO nucleation layers. The optical properties were analyzed by photoluminescence (PL) and cathodoluminescence (CL) measurements. The ZnO nanowires were found to emit strong ultraviolet (UV) light at 386 nm and weak green emission as observed by PL measurements. The stoichiometry of Zn and O was found to be close to 1 by x-ray photoelectron spectroscopy (XPS) measurements. The process-dependent growth properties of ZnO nanostructures can be harnessed for future development of nanoelectronic components including optically pumped lasers, optical modulators, detectors, electron emitters, and gas sensors.

  19. Aligned, ultra-long graphene nanoribbon network fabrication by nanowire etch masks

    NASA Astrophysics Data System (ADS)

    Wood, Joshua; Sivapalan, Sean; Dorgan, Vincent; Murphy, Catherine; Pop, Eric; Lyding, Joseph

    2011-03-01

    Patterning semi-metallic graphene into quasi one-dimensional structures known as nanoribbons (GNRs) can open a ~ 0.5 eV bandgap by quantum confinement. To circumvent GNR lithographic difficulties, Si nanowires (NWs) were used previously as an etch mask for exfoliated graphene, but with no scalability or alignment control. Conversely, we transfer ~ 1 in 2 graphene sheets off copper to silicon dioxide, giving us a template for array fabrication. We meniscus align both Au NWs (w > = 20 nm , l = 400 nm) andAgNWs (w > = 200 nm , l > = 10 μ m) , respectively , onthegraphenesurface . Byreactiveionetch (RIE) , weremovetheunmaskedgraphene , andweetchtheNWs . BasedonthestartingNWs , theresultingGNRarrayshavelengthsrangingfrom 200 nmtotensofmicrons , andwidthsfrom 10 nmto 250 nm . WecreatesingleGNRsthatcanspanmicron - separatedcontactsandGNRnetworks , similartoagraphenenanomesh . UsingatomicforcemicroscopyandRamanspectroscopy , wedeterminethatwehavemonolayerGNRswithahighdisorderintensityI D / I G ~ 1 , indicating rough edges and graphene grain boundaries, which are deleterious to transport.

  20. Characterization of planar pn heterojunction diodes constructed with Cu2O nanoparticle films and single ZnO nanowires.

    PubMed

    Kwak, Kiyeol; Cho, Kyoungah; Kim, Sangsig

    2013-05-01

    In this study, we fabricate planar pn heterojunction diodes composed of Cu2O nanoparticle (NP) films and single ZnO nanowires (NWs) on SiO2 (300 nm)/Si substrates and investigate their characteristics in the dark and under the illumination of white light and 325 nm wavelength light. The diode at bias voltages of +/- 1 V shows rectification ratios of 10 (in the dark) and 34 (under the illumination of white light). On the other hand, the diode exposed to the 325 nm wavelength light exhibits Ohmic characteristics which are associated with efficient photocurrent generation in both the Cu2O NP film and the single ZnO NW. PMID:23858873

  1. Defect formation and magnetic properties of carbon-doped ZnO nanowires by the first principles

    NASA Astrophysics Data System (ADS)

    Shi, Li-Bin; Li, Ming-Biao; Fei, Ying

    2013-02-01

    Theoretical calculation based on density functional theory (DFT) and local density approximation (LDA) with Hubbard parameters has been carried out in studying defect formation energy, transition energy and ferromagnetism of carbon-doped ZnO nanowires (NW). The formation and ionization characteristics of the defects [CO (B), CO (S), CZn (B), VO (B), VZn (B), IO (oct) and IZn (oct)] in ZnO NW are analyzed in the text. Ferromagnetic (FM) and antiferromagnetic (AFM) coupling between C atoms are also investigated by 9 different configurations. The FM and AFM stability are explained by the interaction of C energy level. In addition, the vacancies [VO (B) and VZn (B)] and interstitials [IO (oct) and IZn (oct)] affecting the FM coupling are also investigated. It is found that magnetic moment of C 2p can be mediated by these defects.

  2. High-efficiency second harmonic generation from a single hybrid ZnO nanowire/Au plasmonic nano-oligomer.

    PubMed

    Grinblat, Gustavo; Rahmani, Mohsen; Cortés, Emiliano; Caldarola, Martín; Comedi, David; Maier, Stefan A; Bragas, Andrea V

    2014-11-12

    We introduce a plasmonic-semiconductor hybrid nanosystem, consisting of a ZnO nanowire coupled to a gold pentamer oligomer by crossing the hot-spot. It is demonstrated that the hybrid system exhibits a second harmonic (SH) conversion efficiency of ∼3 × 10(-5)%, which is among the highest values for a nanoscale object at optical frequencies reported so far. The SH intensity was found to be ∼1700 times larger than that from the same nanowire excited outside the hot-spot. Placing high nonlinear susceptibility materials precisely in plasmonic confined-field regions to enhance SH generation opens new perspectives for highly efficient light frequency up-conversion on the nanoscale. PMID:25347036

  3. Time Resolved Photoluminescence Studies of ZnO and Zn2SnO4 Nanowires for Solar Cells Applications

    NASA Astrophysics Data System (ADS)

    Yakami, Baichhabi Raj; Mahat, Meg; Chen, Jiajun; Lu, Liyou; Wang, Wenyong; Pikal, Jon M.

    2013-03-01

    Sensitized nanowires (NWs) are a promising option for solar cells. They serve as the support structure for the absorbing centers, provide interfacial charge separation, and transport to the anode. Most work has focused on binary oxides, but ternary oxides have advantages due to flexibility in the properties of the oxide. Here we report on the photoluminescence (PL) and Time Resolved PL (TRPL) of Zinc oxide (ZnO) and Zinc Tin Oxide (ZTO) NWs grown by Chemical Vapor Deposition. The ZnO NWs show strong band gap emission and weak but resolvable defect emission peaks. The PL from the ZTO NWs does not show any band gap emission and absorption measurements confirm that these NWs have a direct forbidden transition. The ZTO NWs do have a board visible emission peak, which is usually attributed defects and oxygen vacancies. TRPL of the band gap emission in ZnO NWs yield a carrier lifetime of 1.4ns. The TRPL of the defect peaks in ZTO NWs are more complicated, showing a multi-exponential decay but with an overall decay rate similar to the ZnO NWs. This indicates that the expected increase in carrier lifetime in the ZTO NWs is not currently realized likely due to defect recombination, and additional optimization of the NW growth process may yield improved performance. DOE

  4. Optimizing and Improving the Growth Quality of ZnO Nanowire Arrays Guided by Statistical Design of Experiments.

    PubMed

    Xu, Sheng; Adiga, Nagesh; Ba, Shan; Dasgupta, Tirthankar; Wu, C F Jeff; Wang, Zhong Lin

    2009-07-28

    Controlling the morphology of the as-synthesized nanostructures is usually challenging, and there lacks of a general theoretical guidance in experimental approach. In this study, a novel way of optimizing the aspect ratio of hydrothermally grown ZnO nanowire (NW) arrays is presented by utilizing a systematic statistical design and analysis method. In this work, we use pick-the-winner rule and one-pair-at-a-time main effect analysis to sequentially design the experiments and identify optimal reaction settings. By controlling the hydrothermal reaction parameters (reaction temperature, time, precursor concentration, and capping agent), we improved the aspect ratio of ZnO NWs from around 10 to nearly 23. The effect of noise on the experimental results was identified and successfully reduced, and the statistical design and analysis methods were very effective in reducing the number of experiments performed and in identifying the optimal experimental settings. In addition, the antireflection spectrum of the as-synthesized ZnO NWs clearly shows that higher aspect ratio of the ZnO NW arrays leads to about 30% stronger suppression in the UV-vis range emission. This shows great potential applications as antireflective coating layers in photovoltaic devices.

  5. Modification of the optical and structural properties of ZnO nanowires by low-energy Ar+ ion sputtering

    PubMed Central

    2013-01-01

    The effects of low-energy (≤2 kV) Ar+ irradiation on the optical and structural properties of zinc oxide (ZnO) nanowires (NWs) grown by a simple and cost-effective low-temperature technique were investigated. Both photoluminescence spectra from ZnO NW-coated films and cathodoluminescence analysis of individual ZnO NWs demonstrated obvious evidences of ultraviolet/visible luminescent enhancement with respect to irradiation fluence. Annihilation of the thinner ZnO NWs after the ion bombardment was appreciated by means of high-resolution scanning electron microscopy and transmission electron microscopy (TEM), which results in an increasing NW mean diameter for increasing irradiation fluences. Corresponding structural analysis by TEM pointed out not only significant changes in the morphology but also in the microstructure of these NWs, revealing certain radiation-sensitive behavior. The possible mechanisms accounting for the decrease of the deep-level emissions in the NWs with the increasing irradiation fluences are discussed according to their structural modifications. PMID:23570658

  6. Effect of gamma irradiation on Schottky-contacted vertically aligned ZnO nanorod-based hydrogen sensor

    NASA Astrophysics Data System (ADS)

    Ranwa, Sapana; Singh Barala, Surendra; Fanetti, Mattia; Kumar, Mahesh

    2016-08-01

    We report the impact of gamma irradiation on the performance of a gold Schottky-contacted ZnO nanorod-based hydrogen sensor. RF-sputtered vertically aligned highly c-axis-oriented ZnO NRs were grown on Si(100) substrate. X-ray diffraction shows no significant change in crystal structure at low gamma doses from 1 to 5 kGy. As gamma irradiation doses increase to 10 kGy, the single crystalline ZnO structure converts to polycrystalline. The photoluminescence spectra also shows suppression of the near-band emission peak and the huge wide-band spectrum indicates the generation of structural defects at high gamma doses. At 1 kGy, the hydrogen sensor response was enhanced from 67% to 77% for 1% hydrogen in pure argon at a 150 °C operating temperature. However, at 10 kGy, the relative response decreases to 33.5%. High gamma irradiation causes displacement damage and defects in ZnO NRs, and as a result, degrades the sensor’s performance as a result. Low gamma irradiation doses activate the ZnO NR surface through ionization, which enhances the sensor performance. The relative response of the hydrogen sensor was enhanced by ∼14.9% with respect to pristine ZnO using 1 kGy gamma ray treatment.

  7. Effect of gamma irradiation on Schottky-contacted vertically aligned ZnO nanorod-based hydrogen sensor.

    PubMed

    Ranwa, Sapana; Barala, Surendra Singh; Fanetti, Mattia; Kumar, Mahesh

    2016-08-26

    We report the impact of gamma irradiation on the performance of a gold Schottky-contacted ZnO nanorod-based hydrogen sensor. RF-sputtered vertically aligned highly c-axis-oriented ZnO NRs were grown on Si(100) substrate. X-ray diffraction shows no significant change in crystal structure at low gamma doses from 1 to 5 kGy. As gamma irradiation doses increase to 10 kGy, the single crystalline ZnO structure converts to polycrystalline. The photoluminescence spectra also shows suppression of the near-band emission peak and the huge wide-band spectrum indicates the generation of structural defects at high gamma doses. At 1 kGy, the hydrogen sensor response was enhanced from 67% to 77% for 1% hydrogen in pure argon at a 150 °C operating temperature. However, at 10 kGy, the relative response decreases to 33.5%. High gamma irradiation causes displacement damage and defects in ZnO NRs, and as a result, degrades the sensor's performance as a result. Low gamma irradiation doses activate the ZnO NR surface through ionization, which enhances the sensor performance. The relative response of the hydrogen sensor was enhanced by ∼14.9% with respect to pristine ZnO using 1 kGy gamma ray treatment. PMID:27418478

  8. Photoelectric probing of the interfacial trap density-of-states in ZnO nanowire field-effect transistors.

    PubMed

    Raza, Syed Raza Ali; Lee, Young Tack; Chang, Youn-Gyoung; Jeon, Pyo Jin; Kim, Jae Hoon; Ha, Ryong; Choi, Heon-Jin; Im, Seongil

    2013-02-28

    We have fabricated transparent top-gate ZnO nanowire (NW) field effect transistors (FETs) on glass and measured their trap density-of-states (DOS) at the dielectric/ZnO NW interface with monochromatic photon beams during their operation. Our photon-probe method showed clear signatures of charge trap DOS at the interface, located near 2.3, 2.7, and 2.9 eV below the conduction band edge. The DOS information was utilized for the photo-detecting application of our transparent NW-FETs, which demonstrated fast and sensitive photo-detection of visible lights.

  9. Alignment of human cardiomyocytes on laser patterned biphasic core/shell nanowire assemblies

    NASA Astrophysics Data System (ADS)

    Kiefer, Karin; Lee, Juseok; Haidar, Ayman; Martinez Miró, Marina; Akkan, Cagri Kaan; Veith, Michael; Cenk Aktas, Oral; Abdul-Khaliq, Hashim

    2014-12-01

    The management of end stage heart failure patients is only possible by heart transplantation or by the implantation of artificial hearts as a bridge for later transplantation. However, these therapeutic strategies are limited by a lack of donor hearts and by the associated complications, such as coagulation and infection, due to the used artificial mechanical circulatory assist devices. Therefore, new strategies for myocardial regenerative approaches are under extensive research to produce contractile myocardial tissue in the future to replace non-contractile myocardial ischemic and scarred tissue. Different approaches, such as cell transplantation, have been studied intensively. Although successful approaches have been observed, there are still limitations to the application. It is envisaged that myocardial tissue engineering can be used to help replace infarcted non-contractile tissue. The developed tissue should later mimic the aligned fibrillar structure of the extracellular matrix and provide important guidance cues for the survival, function and the needed orientation of cardiomyocytes. Nanostructured surfaces have been tested to provide a guided direction that cells can follow. In the present study, the cellular adhesion/alignment of human cardiomyocytes and the biocompatibility have been investigated after cultivation on different laser-patterned nanowires compared with unmodified nanowires. As a result, the nanostructured surfaces possessed good biocompatibility before and after laser modification. The laser-induced scalability of the pattern enabled the growth and orientation of the adhered myocardial tissue. Such approaches may be used to modify the surface of potential scaffolds to develop myocardial contractile tissue in the future.

  10. Correlation between SSM substrate effect and physical properties of ZnO nanowires electrodeposited with or without seed layer for enhanced photoelectrochemical applications

    NASA Astrophysics Data System (ADS)

    Lamouchi, A.; Slimi, B.; Ben Assaker, I.; Gannouni, M.; Chtourou, R.

    2016-06-01

    ZnO nanowires (NWs) were grown vertically by electrodeposition technique on a stainless-steel mesh (SSM) substrate in the presence and absence of seed layer. A new contribution to the knowledge of both substrate nature and seed layer dependence on structural, morphological, optical properties is reported. X-ray diffraction revealed that all the samples are mainly crystallized in the wurtzite ZnO phase. In the presence of seed layer onto the SSM substrate, the crystalline nature of ZnO NWs is improved by the enhancement of intensity in (002) peak, which indicates a preferential orientation along this peak. The scanning electron microscopy (SEM) images show that, in the presence of seed layer, nanowires appear uniform and stand perpendicular to the substrate with hexagonal shape, implying the occurrence of the wurtzite ZnO crystal structure. According to optical measurements, the decrease of the band-gap energy is due mainly to the seed layer effect and the SSM substrate contribution. To investigate the effect of seed layer and SSM substrate, a photoeletrochemical (PEC) analysis of ZnO NWs is performed. The photocurrent density produced by the ZnO NWs/ZnO/SSM electrode reached 0.2mA·cm^-2, about two times higher than that measured on the ZnO NWs/SSM electrode. These results indicate that both seed layer and substrate have great potential in photoelectrochemical devices.

  11. Chlorine Gas Sensing Performance of On-Chip Grown ZnO, WO3, and SnO2 Nanowire Sensors.

    PubMed

    Tran, Van Dang; Nguyen, Duc Hoa; Nguyen, Van Duy; Nguyen, Van Hieu

    2016-02-01

    Monitoring toxic chlorine (Cl2) at the parts-per-billion (ppb) level is crucial for safe usage of this gas. Herein, ZnO, WO3, and SnO2 nanowire sensors were fabricated using an on-chip growth technique with chemical vapor deposition. The Cl2 gas-sensing characteristics of the fabricated sensors were systematically investigated. Results demonstrated that SnO2 nanowires exhibited higher sensitivity to Cl2 gas than ZnO and WO3 nanowires. The response (RCl2/Rair) of the SnO2 nanowire sensor to 50 ppb Cl2 at 50 °C was about 57. Hence, SnO2 nanowires can be an excellent sensing material for detecting Cl2 gas at the ppb level under low temperatures. Abnormal sensing characteristics were observed in the WO3 and SnO2 nanowire sensors at certain temperatures; in particular, the response level of these sensors to 5 ppm of Cl2 was lower than that to 2.5 ppm of Cl2. The sensing mechanism of the SnO2 nanowire sensor was also elucidated by determining Cl2 responses under N2 and dry air as carrier gases. We proved that the Cl2 molecule was first directly adsorbed on the metal oxide surface and was then substituted for pre-adsorbed oxygen, followed by lattice oxygen.

  12. Low-Cost and High-Productivity Three-Dimensional Nanocapacitors Based on Stand-Up ZnO Nanowires for Energy Storage

    NASA Astrophysics Data System (ADS)

    Wei, Lei; Liu, Qi-Xuan; Zhu, Bao; Liu, Wen-Jun; Ding, Shi-Jin; Lu, Hong-Liang; Jiang, Anquan; Zhang, David Wei

    2016-04-01

    Highly powered electrostatic capacitors based on nanostructures with a high aspect ratio are becoming critical for advanced energy storage technology because of their high burst power and energy storage capability. We report the fabrication process and the electrical characteristics of high capacitance density capacitors with three-dimensional solid-state nanocapacitors based on a ZnO nanowire template. Stand-up ZnO nanowires are grown face down on p-type Si substrates coated with a ZnO seed layer using a hydrothermal method. Stacks of AlZnO/Al2O3/AlZnO are then deposited sequentially on the ZnO nanowires using atomic layer deposition. The fabricated capacitor has a high capacitance density up to 92 fF/μm2 at 1 kHz (around ten times that of the planar capacitor without nanowires) and an extremely low leakage current density of 3.4 × 10-8 A/cm2 at 2 V for a 5-nm Al2O3 dielectric. Additionally, the charge-discharge characteristics of the capacitor were investigated, indicating that the resistance-capacitance time constants were 550 ns for both the charging and discharging processes and the time constant was not dependent on the voltage. This reflects good power characteristics of the fabricated capacitors. Therefore, the current work provides an exciting strategy to fabricate low-cost and easily processable, high capacitance density capacitors for energy storage.

  13. Optimization of the design of extremely thin absorber solar cells based on electrodeposited ZnO nanowires.

    PubMed

    Lévy-Clément, Claude; Elias, Jamil

    2013-07-22

    The properties of the components of ZnO/CdSe/CuSCN extremely thin absorber (ETA) solar cells based on electrodeposited ZnO nanowires (NWs) were investigated. The goal was to study the influence of their morphology on the characteristics of the solar cells. To increase the energy conversion efficiency of the solar cell, it was generally proposed to increase the roughness factor of the ZnO NW arrays (i.e. to increase the NW length) with the purpose of decreasing the absorber thickness, improving the light scattering, and consequently the light absorption in the ZnO/CdSe NW arrays. However, this strategy increased the recombination centers, which affected the efficiency of the solar cell. We developed another strategy that acts on the optical configuration of the solar cells by increasing the diameter of the ZnO NW (from 100 to 330 nm) while maintaining a low roughness factor. We observed that the scattering of the ZnO NW arrays occurred over a large wavelength range and extended closer to the CdSe absorber bandgap, and this led to an enhancement in the effective absorption of the ZnO/CdSe NW arrays and an increase in the solar cell characteristics. We found that the thicknesses of CuSCN above the ZnO/CdSe NW tips and the CdSe coating layer were optimized at 1.5 μm and 30 nm, respectively. Optimized ZnO/CdSe/CuSCN solar cells exhibiting 3.2% solar energy conversion efficiency were obtained by using 230 nm diameter ZnO NWs.

  14. Hierarchical growth of TiO2 nanosheets on anodic ZnO nanowires for high efficiency dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Miles, David O.; Lee, Chang Soo; Cameron, Petra J.; Mattia, Davide; Kim, Jong Hak

    2016-09-01

    We present a novel route to hierarchical core-shell structures consisting of an anodic ZnO nanowire core surrounded by a shell of TiO2 nanosheets (ZNW@TNS). This material combines the beneficial properties of enhanced electron transport, provided by the nanowire core, with the high surface area and chemical stability of the TiO2 shell. Quasi-solid-state dye-sensitized solar cells (qssDSSCs) are prepared using different quantities of either the bare ZnO nanowires or the hierarchical nanowire structures and the effect on cell performance is examined. It is found that whilst the addition of the bare ZnO nanowires results in a decrease in cell performance, significant improvements can be achieved with the addition of small quantities of the hierarchical structures. Power conversion efficiencies of up to 7.5% are achieved under 1 Sun, AM 1.5 simulated sunlight, with a ∼30% increase compared to non-hierarchical mesoporous TiO2 films. A solid-state DSSC (ssDSSC) with a single component solid polymer also exhibits excellent efficiency of 7.2%. The improvement in cell performance is related to the improved light scattering, surface area and electron transport properties via the use of reflectance spectroscopy, BET surface area measurements and electrochemical impedance spectroscopy.

  15. Chromium inhibition and size-selected Au nanocluster catalysis for the solution growth of low-density ZnO nanowires

    PubMed Central

    Errico, Vito; Arrabito, Giuseppe; Plant, Simon R.; Medaglia, Pier Gianni; Palmer, Richard E.; Falconi, Christian

    2015-01-01

    The wet chemical synthesis of nanostructures has many crucial advantages over high-temperature methods, including simplicity, low-cost, and deposition on almost arbitrary substrates. Nevertheless, the density-controlled solution growth of nanowires still remains a challenge, especially at the low densities (e.g. 1 to 10 nanowires/100 μm2) required, as an example, for intracellular analyses. Here, we demonstrate the solution-growth of ZnO nanowires using a thin chromium film as a nucleation inhibitor and Au size-selected nanoclusters (SSNCs) as catalytic particles for which the density and, in contrast with previous reports, size can be accurately controlled. Our results also provide evidence that the enhanced ZnO hetero-nucleation is dominated by Au SSNCs catalysis rather than by layer adaptation. The proposed approach only uses low temperatures (≤70 °C) and is therefore suitable for any substrate, including printed circuit boards (PCBs) and the plastic substrates which are routinely used for cell cultures. As a proof-of-concept we report the density-controlled synthesis of ZnO nanowires on flexible PCBs, thus opening the way to assembling compact intracellular-analysis systems, including nanowires, electronics, and microfluidics, on a single substrate. PMID:26202588

  16. Seed layer-free electrodeposition of well-aligned ZnO submicron rod arrays via a simple aqueous electrolyte

    SciTech Connect

    Xu Feng; Lu Yinong; Xia Lili; Xie Yan; Dai Min; Liu Yunfei

    2009-08-05

    A potentiostatic electrodeposition technique was used to directly fabricate large-scale, well-aligned, and single-crystalline submicron ZnO rod arrays on tin doped indium oxide glass substrate without a pre-prepared seed layer of ZnO from an aqueous solution only containing zinc nitrate. The effects of electrochemical parameters, such as electrodeposition potential, electrodeposition duration, solution temperature, and precursor concentration, on the orientation, morphology, aspect ratio, and growth rate of ZnO rod arrays were systematically investigated. Results show that submicron ZnO rod arrays with (0 0 0 2) preferred orientation and perfect crystallization were obtained when electrodeposition potential was in the range from -0.6 to -1.1 V and solution temperature was controlled above 60 deg. C. Both high solution temperature and low precursor concentration resulted in the decrease in rod diameters. Photoluminescence measures showed that small diameter and nanotips of ZnO rod arrays should be responsible for strong and sharp ultraviolet emission in the room temperature photoluminescence spectra.

  17. "Secondary Growth" in Hydrothermal Synthesis of Aligned ZnO Nanostructures and Its Application in Dye-Sensitized Solar Cells.

    PubMed

    Liu, Wenjun; Huang, Qiaoling; Huang, Tengji; Cao, Peijiang; Han, Shun; Jia, Fang; Zhu, Deliang; Ma, Xiaocui; Lul, Youming

    2016-04-01

    One-dimensional (1D) aligned ZnO nanostructures were prepared on ZnO film seeded substrates using a low-temperature hydrothermal method, and zinc nitrate and hexamethylenetetramine (HMT) precursors. It was observed that increasing the concentration ratio of Zn2+/HMT from 1 to 100 led to a "secondary growth," and a change in the morphologies of the ZnO nanostructures from arrays of thick nanorods to arrays of thin nanorod-step-thick nanorods. The morphological evolution of ZnO nanostructures with increased growth time at high Zn2+/HMT concentration ratios showed the same transformation. Dye-sensitized solar cells (DSSCs) were fabricated using ZnO nanostructures as the photoanodes, and the electron transport properties were determined by electrochemical impedance spectroscopy (EIS). Although the DSSCs showed low power conversion efficiencies due to the short lengths, the arrays of the thin nanorods demonstrated excellent electron transport with an electron diffusion coefficient (Dn) of 1.57 x 10(-3) cm2/s, and an effective diffusion length (L) of 140 µm. PMID:27451759

  18. Catalyst-free highly vertically aligned ZnO nanoneedle arrays grown by plasma-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Wang, J. S.; Yang, C. S.; Chen, P. I.; Su, C. F.; Chen, W. J.; Chiu, K. C.; Chou, W. C.

    2009-11-01

    This work describes the growth of highly vertically aligned ZnO nanoneedle arrays on wafer-scale catalyst-free c-plane sapphire substrates by plasma-assisted molecular beam epitaxy under high Zn flux conditions. The photoluminescence spectrum of the as-grown samples reveals strong free exciton emissions and donor-bound exciton emissions with an excellent full width at half maximum (FWHM) of 1.4 meV. The field emission of highly vertically aligned ZnO nanoneedle arrays closely follows the Fowler-Nordheim theory. The turn-on electric field was about 5.9 V/µm with a field enhancement factor β of around 793.

  19. Electrochemical Characterization of CdSe-Coated ZnO Nanowire Extremely-Thin-Absorber Solar Cells

    NASA Astrophysics Data System (ADS)

    Jones, Treavor Zachary

    Four different CdSe-coated nanostructured ZnO ETA configurations as photoelectrochemical cells with polysulfide electrolyte were studied using both conventional and electrochemical characterization techniques. ETA configurations with different ZnO nanowire lengths of 500 nm and 1000 nm were varied with different CdSe absorber-layer thicknesses of 15 nm and 45 nm to examine the effects on PV performance, carrier transport, and carrier recombination. Linear-sweep voltammetry (J-V) measurements showed that longer ZnO nanowires with thinner CdSe absorber layers gave better PV performance with the 1000 nm length/15 nm CdSe thickness samples having the highest JSC ˜4.4 mA/cm2, VOC ˜0.38 V, Pmax ˜0.52 mW/cm2, and second-highest FF ˜0.32. Mott-Schottky (MS) analysis was performed on individual ETA-layer materials to obtain estimates of their ND and VFB for insight into how individual layers in an ETA cell can assist in carrier separation. MS results were shown to be irrespective of illumination, exposed area, or the electrolyte used. Annealed ZnO nanowires had an ND ˜2x10 19 cm-3, a VFB ˜(-0.4) V. versus Ag/AgCl, and were observed to be n-type. MS analysis of planar CdSe showed it to be slightly n-type and gave parameter estimates of ND ˜3x10 17 cm-3 and VFB ˜-1.1 V v. Ag/AgCl, which were also used to calculate its VBI to be ˜0.4 V, and its depletion width, W to be ˜44 nm. Carrier transport studies were performed using IMPS and photocurrent decay measurements to estimate the time constant for carrier transport, with the fastest observed for shorter nanowires and thicker CdSe absorber layers at ˜10 micros. Carrier recombination studies were also performed using IMVS, photovoltage decay, and EIS measurements to estimate the time constant for carrier recombination, with the slowest estimated for the samples with 45 nm CdSe thickness samples at ˜100 ms. Therefore, shorter nanowires with thicker CdSe absorber layers showed the best potential for improving carrier

  20. Tuning of multifunctional Cu-doped ZnO films and nanowires for enhanced piezo/ferroelectric-like and gas/photoresponse properties.

    PubMed

    Ong, Wei Li; Huang, Hejin; Xiao, Juanxiu; Zeng, Kaiyang; Ho, Ghim Wei

    2014-01-01

    The prospect of tuning and enhancing multiple properties of ZnO from optical, electrical, piezo to ferroelectricity/magnetism with Cu dopants will certainly spur the pursuit of facile doping methodology to immensely advance this field of research. Here, a one-step aqueous synthesis of Cu-doped ZnO nanostructured materials with effective controllability over the morphology (film to nanowire) and doping concentrations both on rigid and flexible substrates has been developed. High structural integrity Cu-doped ZnO films and nanowires were achieved without multiple/harsh post-processing which tends to degrade their functional properties. Comprehensive investigations of varying doping concentrations on the enhancement and tunability of room temperature piezo/ferroelectricity to gas/photosensing multifunctional properties were systematically reported for the first time.

  1. In Situ X-ray Absorption Near-Edge Structure Spectroscopy of ZnO Nanowire Growth During Chemical Bath Deposition

    SciTech Connect

    McPeak, Kevin M.; Becker, Matthew A.; Britton, Nathan G.; Majidi, Hasti; Bunker, Bruce A.; Baxter, Jason B.

    2010-12-03

    Chemical bath deposition (CBD) offers a simple and inexpensive route to deposit semiconductor nanostructures, but lack of fundamental understanding and control of the underlying chemistry has limited its versatility. Here we report the first use of in situ X-ray absorption spectroscopy during CBD, enabling detailed investigation of both reaction mechanisms and kinetics of ZnO nanowire growth from zinc nitrate and hexamethylenetetramine (HMTA) precursors. Time-resolved X-ray absorption near-edge structure (XANES) spectra were used to quantify Zn(II) speciation in both solution and solid phases. ZnO crystallizes directly from [Zn(H{sub 2}O){sub 6}]{sup 2+} without long-lived intermediates. Using ZnO nanowire deposition as an example, this study establishes in situ XANES spectroscopy as an excellent quantitative tool to understand CBD of nanomaterials.

  2. Influence of electrodeposition parameters on the structure and morphology of ZnO nanowire arrays and networks synthesized in etched ion-track membranes

    NASA Astrophysics Data System (ADS)

    Movsesyan, Liana; Schubert, Ina; Yeranyan, Lilit; Trautmann, Christina; Toimil-Molares, Maria Eugenia

    2016-01-01

    This work presents the synthesis and characterization of two different zinc oxide (ZnO) nanowire assemblies: arrays of parallel-oriented cylindrical wires and three-dimensional (3D) networks of highly interconnected wires. Both are synthesized by electrochemical deposition in the pores of etched ion-track polycarbonate membranes. The crystallinity and crystallographic properties of the wires are influenced by the deposition parameters. In particular, we investigate how the diameter of the membrane nanopores and the deposition potential affect crystal orientation and morphology during nanowire growth. X-ray diffraction and energy dispersive x-ray analysis demonstrated that all wires are pure ZnO with a wurtzite hexagonal structure and free of impurities. The unique architecture of the synthesized 3D networks of nanowires with a high aspect ratio and enhanced mechanical stability is discussed.

  3. Enzyme-Based Lactic Acid Detection Using Algaas/gaas High Electron Mobility Transistor with Sb-Doped Zno Nanowires Grown on the Gate Region

    NASA Astrophysics Data System (ADS)

    Ma, Siwei; Huang, Yunhua; Liu, Hanshuo; Zhang, Xiaohui; Liao, Qingliang

    2012-08-01

    Sb-doped ZnO nanowires were synthesized via chemical vapor deposition method. Scanning electron microscopic, transmission electron microscopic, X-ray diffraction and energy dispersive spectrometer have been used to characterize the morphology and structure of the nanowires. The AlGaAs/GaAs HEMT drain-source current exhibited a fast response of about 1s when different concentrations of lactic acid solutions were added to the surface of lactate oxidase immobilized on the ZnO nanowires. The HEMT could detect a range of lactic acid concentrations from 3 pM to 30 μM. The biosensor exhibited good performance along with fast response, high sensitivity, and long-term stability. Our results demonstrate the possibility of using AlGaAs/GaAs HEMTs for lactic acid measurements and provide new further fundamental insights into the study of nanoscience and nanodevices.

  4. Spray-coating route for highly aligned and large-scale arrays of nanowires.

    PubMed

    Assad, Ossama; Leshansky, Alexander M; Wang, Bin; Stelzner, Thomas; Christiansen, Silke; Haick, Hossam

    2012-06-26

    Technological implementation of nanowires (NWs) requires these components to be organized with controlled orientation and density on various substrates. Here, we report on a simple and efficient route for the deposition of highly ordered and highly aligned NW arrays on a wide range of receiver substrates, including silicon, glass, metals, and flexible plastics with controlled density. The deposition approach is based on spray-coating of a NW suspension under controlled conditions of the nozzle flow rate, droplet size of the sprayed NWs suspension, spray angle, and the temperature of the receiver substrate. The dynamics of droplet generation is understood by a combined action of shear forces and capillary forces. Provided that the size of the generated droplet is comparable to the length of the single NW, the shear-driven elongation of the droplets results presumably in the alignment of the confined NW in the spraying direction. Flattening the droplets upon their impact with the substrate yields fast immobilization of the spray-aligned NWs on the surface due to van der Waals attraction. The availability of the spray-coating technique in the current microelectronics technology would ensure immediate implementation in production lines, with minimal changes in the fabrication design and/or auxiliary tools used for this purpose.

  5. Low temperature preparation of Ag-doped ZnO nanowire arrays for sensor and light-emitting diode applications

    NASA Astrophysics Data System (ADS)

    Lupan, O.; Viana, B.; Cretu, V.; Postica, V.; Adelung, R.; Pauporté, T.

    2016-02-01

    Transition metal doped-oxide semiconductor nanostructures are important to achieve enhanced and new properties for advanced applications. We describe the low temperature preparation of ZnO:Ag nanowire/nanorod (NW/NR) arrays by electrodeposition at 90 °C. The NWs have been characterized by SEM, EDX, transmittance and photoluminescence (PL) measurements. The integration of Ag in the crystal is shown. Single nanowire/nanorod of ZnO:Ag was integrated in a nanosensor structure leading to new and enhanced properties. The ultraviolet (UV) response of the nanosensor was investigated at room temperature. Experimental results indicate that ZnO:Ag (0.75 μM) nanosensor possesses faster response/recovery time and better response to UV light than those reported in literature. The sensor structure has been also shown to give a fast response for the hydrogen detection with improved performances compared to pristine ZnO NWs. ZnO:Ag nanowire/nanorod arrays electrochemically grown on p-type GaN single crystal layer is also shown to act as light emitter in LED structures. The emission wavelength is red-shifted compared to pristine ZnO NW array. At low Ag concentration a single UV-blue emission is found whereas at higher concentration of dopant the emission is broadened and extends up to the red wavelength range. Our study indicates that high quality ZnO:Ag NW/NR prepared at low temperature by electrodeposition can serve as building nanomaterials for new sensors and light emitting diodes (LEDs) structures with low-power consumption.

  6. Large-scale horizontally aligned ZnO microrod arrays with controlled orientation, periodic distribution as building blocks for chip-in piezo-phototronic LEDs.

    PubMed

    Guo, Zhen; Li, Haiwen; Zhou, Lianqun; Zhao, Dongxu; Wu, Yihui; Zhang, Zhiqiang; Zhang, Wei; Li, Chuanyu; Yao, Jia

    2015-01-27

    A novel method of fabricating large-scale horizontally aligned ZnO microrod arrays with controlled orientation and periodic distribution via combing technology is introduced. Horizontally aligned ZnO microrod arrays with uniform orientation and periodic distribution can be realized based on the conventional bottom-up method prepared vertically aligned ZnO microrod matrix via the combing method. When the combing parameters are changed, the orientation of horizontally aligned ZnO microrod arrays can be adjusted (θ = 90° or 45°) in a plane and a misalignment angle of the microrods (0.3° to 2.3°) with low-growth density can be obtained. To explore the potential applications based on the vertically and horizontally aligned ZnO microrods on p-GaN layer, piezo-phototronic devices such as heterojunction LEDs are built. Electroluminescence (EL) emission patterns can be adjusted for the vertically and horizontally aligned ZnO microrods/p-GaN heterojunction LEDs by applying forward bias. Moreover, the emission color from UV-blue to yellow-green can be tuned by investigating the piezoelectric properties of the materials. The EL emission mechanisms of the LEDs are discussed in terms of band diagrams of the heterojunctions and carrier recombination processes.

  7. High performance ZnO nanowire field effect transistors with organic gate nanodielectrics: effects of metal contacts and ozone treatment

    NASA Astrophysics Data System (ADS)

    Ju, Sanghyun; Lee, Kangho; Yoon, Myung-Han; Facchetti, Antonio; Marks, Tobin J.; Janes, David B.

    2007-04-01

    High performance ZnO nanowire field effect transistors (NW-FETs) were fabricated using a nanoscopic self-assembled organic gate insulator and characterized in terms of conventional device performance metrics. To optimize device performance and understand the effects of interface properties, devices were fabricated with both Al and Au/Ti source/drain contacts, and device electrical properties were characterized following annealing and ozone treatment. Ozone-treated single ZnO NW-FETs with Al contacts exhibited an on-current (Ion) of ~4 µA at 0.9 Vgs and 1.0 Vds, a threshold voltage (Vth) of 0.2 V, a subthreshold slope (S) of ~130 mV/decade, an on-off current ratio (Ion:Ioff) of ~107, and a field effect mobility (μeff) of ~1175 cm2 V-1 s-1. In addition, ozone-treated ZnO NW-FETs consistently retained the enhanced device performance metrics after SiO2 passivation. A 2D device simulation was performed to explain the enhanced device performance in terms of changes in interfacial trap and fixed charge densities.

  8. Fabrication and Characterization of ZnO Nanowire-based Piezoelectric Nanogenerators for Low Frequency Mechanical Energy Harvesting

    NASA Astrophysics Data System (ADS)

    Poulin-Vittrant, G.; Oshman, C.; Opoku, C.; Dahiya, A. S.; Camara, N.; Alquier, D.; Hue, L.-P. Tran Huu; Lethiecq, M.

    The present work investigates the possibility to charge a Lithium micro-battery (LiB) via direct conversion of ambient mechanical energy into electricity using piezoelectric ZnO nanowire (NW) based microgenerators (PGs). An estimate is provided for the power levels at the different stages of mechanical-to-electrical energy conversion chain, in the following areas: (1) PG output, (2) power management block and (3) LiB storage unit. Also covered in this work is the synthesis, which is a prerequisite for realising such PGs. ZnO NWs of 2 μm in length and 200 nm in diameter have been grown using a low temperature (<150 °C) hydrothermal process on 100 μm thick PET substrates (25 × 25 mm2). Substrates containing bi-layer metal layers with dissimilar electro-negativities functioned as a galvanic cell in the growth nutrients, which acted as an electrolyte medium. This necessitated ZnO NWs growth on conductive surfaces, even in the absence of seed layers and/or substrate with specific lattice parameters. Finally, the assembly steps undertaken to realise the fully functional PGs are discussed, and the performances of the final PG are described thereafter. Subjecting such devices to a 10 Hz sinusoidal bending force resulted in a measured PG output of ∼56 mV peak to peak, on 1 MΩ resistive load.

  9. Synthesis of Highly Stable Silver-Loaded Vertical ZnO Nanowires Array and its Acetylene Sensing Properties

    NASA Astrophysics Data System (ADS)

    Uddin, Abu Sadat Mohammad Iftekhar; Chung, Gwiy-Sang

    2016-09-01

    A silver-loaded one-dimensional (1D) vertical ZnO nanowires (NWs) array synthesized by a facile seed mediated hydrothermal-RF magnetron sputtering method has been investigated for the fabrication of a highly stable and reproducible acetylene (C2H2) gas sensor. Successful immobilization of silver nanoparticles (NPs) as a sensitizer on the ZnO NWs array significantly enhanced the C2H2 sensing properties and showed a stable sensing performance. The grown structure exhibited high response magnitude (30.8 at 1000ppm), short response time (43s) and excellent selectivity at 220∘C. The enhanced performance can probably be accounted for the effect of combining the highly orientated ZnO NWs and catalytically active silver-based network. The superior sensing features toward C2H2 along with broad detection range (1-1000ppm), outstanding stability and excellent reproducibility indicate that the sensor is a promising candidate for practical applications.

  10. PLD-assisted VLS growth of aligned ferrite nanorods, nanowires, and nanobelts-synthesis, and properties.

    PubMed

    Morber, Jenny Ruth; Ding, Yong; Haluska, Michael Stephan; Li, Yang; Liu, J Ping; Wang, Zhong Lin; Snyder, Robert L

    2006-11-01

    We report here a systematic synthesis and characterization of aligned alpha-Fe2O3 (hematite), epsilon-Fe2O3, and Fe3O4 (magnetite) nanorods, nanobelts, and nanowires on alumina substrates using a pulsed laser deposition (PLD) method. The presence of spherical gold catalyst particles at the tips of the nanostructures indicates selective growth via the vapor-liquid-solid (VLS) mechanism. Through a series of experiments, we have produced a primitive "phase diagram" for growing these structures based on several designed pressure and temperature parameters. Transmission electron microscopy (TEM) analysis has shown that the rods, wires, and belts are single-crystalline and grow along <111>m or <110>h directions. X-ray diffraction (XRD) measurements confirm phase and structural analysis. Superconducting quantum interference device (SQUID) measurements show that the iron oxide structures exhibit interesting magnetic behavior, particularly at room temperature. This work is the first known report of magnetite 1D nanostructure growth via the vapor-liquid-solid (VLS) mechanism without using a template, as well as the first known synthesis of long epsilon-Fe2O3 nanobelts and nanowires. PMID:17064124

  11. Construction of 1D SnO2-coated ZnO nanowire heterojunction for their improved n-butylamine sensing performances

    NASA Astrophysics Data System (ADS)

    Wang, Liwei; Li, Jintao; Wang, Yinghui; Yu, Kefu; Tang, Xingying; Zhang, Yuanyuan; Wang, Shaopeng; Wei, Chaoshuai

    2016-10-01

    One-dimensional (1D) SnO2-coated ZnO nanowire (SnO2/ZnO NW) N-N heterojunctions were successfully constructed by an effective solvothermal treatment followed with calcination at 400 °C. The obtained samples were characterized by means of XRD, SEM, TEM, Scanning TEM coupled with EDS and XPS analysis, which confirmed that the outer layers of N-type SnO2 nanoparticles (avg. 4 nm) were uniformly distributed onto our pre-synthesized n-type ZnO nanowire supports (diameter 80~100 nm, length 12~16 μm). Comparisons of the gas sensing performances among pure SnO2, pure ZnO NW and the as-fabricated SnO2/ZnO NW heterojunctions revealed that after modification, SnO2/ZnO NW based sensor exhibited remarkably improved response, fast response and recovery speeds, good selectivity and excellent reproducibility to n-butylamine gas, indicating it can be used as promising candidates for high-performance organic amine sensors. The enhanced gas-sensing behavior should be attributed to the unique 1D wire-like morphology of ZnO support, the small size effect of SnO2 nanoparticles, and the semiconductor depletion layer model induced by the strong interfacial interaction between SnO2 and ZnO of the heterojunctions. The as-prepared SnO2/ZnO NW heterojunctions may also supply other novel applications in the fields like photocatalysis, lithium-ion batteries, waste water purification, and so on.

  12. Construction of 1D SnO2-coated ZnO nanowire heterojunction for their improved n-butylamine sensing performances

    PubMed Central

    Wang, Liwei; Li, Jintao; Wang, Yinghui; Yu, Kefu; Tang, Xingying; Zhang, Yuanyuan; Wang, Shaopeng; Wei, Chaoshuai

    2016-01-01

    One-dimensional (1D) SnO2-coated ZnO nanowire (SnO2/ZnO NW) N-N heterojunctions were successfully constructed by an effective solvothermal treatment followed with calcination at 400 °C. The obtained samples were characterized by means of XRD, SEM, TEM, Scanning TEM coupled with EDS and XPS analysis, which confirmed that the outer layers of N-type SnO2 nanoparticles (avg. 4 nm) were uniformly distributed onto our pre-synthesized n-type ZnO nanowire supports (diameter 80~100 nm, length 12~16 μm). Comparisons of the gas sensing performances among pure SnO2, pure ZnO NW and the as-fabricated SnO2/ZnO NW heterojunctions revealed that after modification, SnO2/ZnO NW based sensor exhibited remarkably improved response, fast response and recovery speeds, good selectivity and excellent reproducibility to n-butylamine gas, indicating it can be used as promising candidates for high-performance organic amine sensors. The enhanced gas-sensing behavior should be attributed to the unique 1D wire-like morphology of ZnO support, the small size effect of SnO2 nanoparticles, and the semiconductor depletion layer model induced by the strong interfacial interaction between SnO2 and ZnO of the heterojunctions. The as-prepared SnO2/ZnO NW heterojunctions may also supply other novel applications in the fields like photocatalysis, lithium-ion batteries, waste water purification, and so on. PMID:27734963

  13. Density Detection of Aligned Nanowire Arrays Using Terahertz Time-Domain Spectroscopy

    NASA Astrophysics Data System (ADS)

    Xiang, Wenfeng; Wang, Xin; Liu, Yuan; Zhang, JiaQi; Zhao, Kun

    2016-07-01

    A rapid technique is necessary to quantitatively detect the density of nanowire (NW) and nanotube arrays in one-dimensional devices which have been identified as useful building blocks for nanoelectronics, optoelectronics, biomedical devices, etc. Terahertz (THz) time-domain spectroscopy was employed in this research to detect the density of aligned Ni NW arrays. The transmitted amplitude of THz peaks and optical thickness of NW arrays was found to be the effective parameters to analyze the density change of NW arrays. Owing to the low multiple scattering and high order of Ni NW arrays, a linear relationship was observed for the transmitted amplitude and optical thickness regarding NW density, respectively. Therefore, THz technique may be used as a promising tool to characterize the density of one-dimensional structures in the large-scale integrated nanodevice fabrication.

  14. Density Detection of Aligned Nanowire Arrays Using Terahertz Time-Domain Spectroscopy.

    PubMed

    Xiang, Wenfeng; Wang, Xin; Liu, Yuan; Zhang, JiaQi; Zhao, Kun

    2016-12-01

    A rapid technique is necessary to quantitatively detect the density of nanowire (NW) and nanotube arrays in one-dimensional devices which have been identified as useful building blocks for nanoelectronics, optoelectronics, biomedical devices, etc. Terahertz (THz) time-domain spectroscopy was employed in this research to detect the density of aligned Ni NW arrays. The transmitted amplitude of THz peaks and optical thickness of NW arrays was found to be the effective parameters to analyze the density change of NW arrays. Owing to the low multiple scattering and high order of Ni NW arrays, a linear relationship was observed for the transmitted amplitude and optical thickness regarding NW density, respectively. Therefore, THz technique may be used as a promising tool to characterize the density of one-dimensional structures in the large-scale integrated nanodevice fabrication.

  15. Density Detection of Aligned Nanowire Arrays Using Terahertz Time-Domain Spectroscopy.

    PubMed

    Xiang, Wenfeng; Wang, Xin; Liu, Yuan; Zhang, JiaQi; Zhao, Kun

    2016-12-01

    A rapid technique is necessary to quantitatively detect the density of nanowire (NW) and nanotube arrays in one-dimensional devices which have been identified as useful building blocks for nanoelectronics, optoelectronics, biomedical devices, etc. Terahertz (THz) time-domain spectroscopy was employed in this research to detect the density of aligned Ni NW arrays. The transmitted amplitude of THz peaks and optical thickness of NW arrays was found to be the effective parameters to analyze the density change of NW arrays. Owing to the low multiple scattering and high order of Ni NW arrays, a linear relationship was observed for the transmitted amplitude and optical thickness regarding NW density, respectively. Therefore, THz technique may be used as a promising tool to characterize the density of one-dimensional structures in the large-scale integrated nanodevice fabrication. PMID:27431495

  16. Performance enhancement of multiple-gate ZnO metal-oxide-semiconductor field-effect transistors fabricated using self-aligned and laser interference photolithography techniques

    PubMed Central

    2014-01-01

    The simple self-aligned photolithography technique and laser interference photolithography technique were proposed and utilized to fabricate multiple-gate ZnO metal-oxide-semiconductor field-effect transistors (MOSFETs). Since the multiple-gate structure could improve the electrical field distribution along the ZnO channel, the performance of the ZnO MOSFETs could be enhanced. The performance of the multiple-gate ZnO MOSFETs was better than that of the conventional single-gate ZnO MOSFETs. The higher the drain-source saturation current (12.41 mA/mm), the higher the transconductance (5.35 mS/mm) and the lower the anomalous off-current (5.7 μA/mm) for the multiple-gate ZnO MOSFETs were obtained. PMID:24948884

  17. Performance enhancement of multiple-gate ZnO metal-oxide-semiconductor field-effect transistors fabricated using self-aligned and laser interference photolithography techniques.

    PubMed

    Lee, Hsin-Ying; Huang, Hung-Lin; Tseng, Chun-Yen

    2014-01-01

    The simple self-aligned photolithography technique and laser interference photolithography technique were proposed and utilized to fabricate multiple-gate ZnO metal-oxide-semiconductor field-effect transistors (MOSFETs). Since the multiple-gate structure could improve the electrical field distribution along the ZnO channel, the performance of the ZnO MOSFETs could be enhanced. The performance of the multiple-gate ZnO MOSFETs was better than that of the conventional single-gate ZnO MOSFETs. The higher the drain-source saturation current (12.41 mA/mm), the higher the transconductance (5.35 mS/mm) and the lower the anomalous off-current (5.7 μA/mm) for the multiple-gate ZnO MOSFETs were obtained.

  18. Magnetic and optical properties of Mn-doped ZnO vertically aligned nanorods synthesized by hydrothermal technique

    NASA Astrophysics Data System (ADS)

    Panda, J.; Sasmal, I.; Nath, T. K.

    2016-03-01

    In this paper we have reported the synthesis of high quality vertically aligned undoped and Mn-doped ZnO single crystalline nanorods arrays on Si (100) substrates using two steps process, namely, initial slow seed layer formation followed by solution growth employing wet chemical hydrothermal method. The shapes of the as grown single crystalline nanorods are hexagonal. The diameter and length of the as grown undoped ZnO nanorods varies in the range of 80-150 nm and 1.0 - 1.4 μm, respectively. Along with the lattice parameters of the hexagonal crystal structure, the diameter and length of Mn doped ZnO nanorods are found to increase slightly as compared to the undoped ZnO nanorods. The X-ray photoelectron spectroscopy confirms the presence of Mn atoms in Mn2+ state in the single crystalline ZnO nanorods. The recorded photoluminescence spectrum contains two emissions peaks having UV exciton emissions along with a green-yellow emission. The green-yellow emissions provide the evidence of singly ionized oxygen vacancies. The magnetic field dependent magnetization measurements [M (H)] and zero field cooled (ZFC) and field cooled (FC) magnetization [M(T)] measurements have been carried out at different isothermal conditions in the temperature range of 5-300 K. The Mn doped ZnO nanorods clearly show room temperature ferromagnetic ordering near room temperature down to 5 K. The observed magnetization may be attributed to the long range ferromagnetic interaction between bound magnetic polarons led by singly charged oxygen vacancies.

  19. Influence of Gas Flow Rate for Formation of Aligned Nanorods in ZnO Thin Films for Solar-Driven Hydrogen Production

    SciTech Connect

    Shet, S.; Chen, L.; Tang, H.; Nuggehalli, R.; Wang, H.; Yan, Y.; Turner, J.; Al-Jassim, M.

    2012-04-01

    ZnO thin films have been deposited in mixed Ar/N{sub 2} gas ambient at substrate temperature of 500 C by radiofrequency sputtering of ZnO targets. We find that an optimum N{sub 2}-to-Ar ratio in the deposition ambient promotes the formation of well-aligned nanorods. ZnO thin films grown in ambient with 25% N{sub 2} gas flow rate promoted nanorods aligned along c-axis and exhibit significantly enhanced photoelectrochemical (PEC) response, compared with ZnO thin films grown in an ambient with different N{sub 2}-to-Ar gas flow ratios. Our results suggest that chamber ambient is critical for the formation of aligned nanostructures, which offer potential advantages for improving the efficiency of PEC water splitting for H{sub 2} production.

  20. Development of vertically aligned ZnO-nanowires scintillators for high spatial resolution x-ray imaging

    SciTech Connect

    Kobayashi, Masakazu Komori, Jun; Shimidzu, Kaiji; Izaki, Masanobu; Uesugi, Kentaro; Takeuchi, Akihisa; Suzuki, Yoshio

    2015-02-23

    Newly designed scintillator of (0001)-oriented ZnO vertical nanowires (vnws) for X-ray imaging was prepared on a Ga-doped ZnO/soda-lime glass by electrodeposition, and the light emission feature was estimated in a synchrotron radiation facility. The ZnO-vnws scintillator revealed a strong light emission and improved resolution on CMOS image compared with that for the ZnO-layer scintillator, although the light emission performance was deteriorated in comparison to the Lu{sub 3}Al{sub 5}O{sub 12:}Ce{sup 3+}. The light emission property closely related to the nanostructure and the resultant photoluminescence characteristic.

  1. Effect of Mn-doping on the growth mechanism and electromagnetic properties of chrysanthemum-like ZnO nanowire clusters

    NASA Astrophysics Data System (ADS)

    Yan, Jun-Feng; You, Tian-Gui; Zhang, Zhi-Yong; Tian, Jiang-Xiao; Yun, Jiang-Ni; Zhao, Wu

    2011-04-01

    Chrysanthemum-like ZnO nanowire clusters with different Mn-doping concentrations are prepared by a hydrothermal process. The microstructure, morphology and electromagnetic properties are characterized by x-ray diffractometer high-resolution transmission electron microscopy (HRTEM), a field emission environment scanning electron microscope (FEESEM) and a microwave vector network analyser respectively. The experimental results indicate that the as-prepared products are Mn-doped ZnO single crystalline with a hexagonal wurtzite structure, that the growth habit changes due to Mn-doping and that a good magnetic loss property is found in the Mn-doped ZnO products, and the average magnetic loss tangent tanδm is up to 0.170099 for 3% Mn-doping, while the dielectric loss tangent tanδe is weakened, owing to the fact that ions Mn2+ enter the crystal lattice of ZnO.

  2. Self-aligned nanoforest in silicon nanowire for sensitive conductance modulation.

    PubMed

    Seol, Myeong-Lok; Ahn, Jae-Hyuk; Choi, Ji-Min; Choi, Sung-Jin; Choi, Yang-Kyu

    2012-11-14

    A self-aligned and localized nanoforest structure is constructed in a top-down fabricated silicon nanowire (SiNW). The surface-to-volume ratio (SVR) of the SiNW is enhanced due to the local nanoforest formation. The conductance modulation property of the SiNWs, which is an important characteristic in sensor and charge transfer based applications, can be largely enhanced. For the selective modification of the channel region, localized Joule-heating and subsequent metal-assisted chemical etching (mac-etch) are employed. The nanoforest is formed only in the channel region without misalignment due to the self-aligned process of Joule-heating. The modified SiNW is applied to a porphyrin-silicon hybrid device to verify the enhanced conductance modulation. The charge transfer efficiency between the porphyrin and the SiNW, which is caused by external optical excitation, is clearly increased compared to the initial SiNW. The effect of the local nanoforest formation is enhanced when longer etching times and larger widths are used. PMID:23066892

  3. Fabricating vertically aligned sub-20 nm Si nanowire arrays by chemical etching and thermal oxidation

    NASA Astrophysics Data System (ADS)

    Li, Luping; Fang, Yin; Xu, Cheng; Zhao, Yang; Zang, Nanzhi; Jiang, Peng; Ziegler, Kirk J.

    2016-04-01

    Silicon nanowires (SiNWs) are appealing building blocks in various applications, including photovoltaics, photonics, and sensors. Fabricating SiNW arrays with diameters <100 nm remains challenging through conventional top-down approaches. In this work, chemical etching and thermal oxidation are combined to fabricate vertically aligned, sub-20 nm SiNW arrays. Defect-free SiNWs with diameters between 95 and 200 nm are first fabricated by nanosphere (NS) lithography and chemical etching. The key aspects for defect-free SiNW fabrication are identified as: (1) achieving a high etching selectivity during NS size reduction; (2) retaining the circular NS shape with smooth sidewalls; and (3) using a directional metal deposition technique. SiNWs with identical spacing but variable diameters are demonstrated by changing the reactive ion etching power. The diameter of the SiNWs is reduced by thermal oxidation, where self-limiting oxidation is encountered after oxidizing the SiNWs at 950 °C for 1 h. A second oxidation is performed to achieve vertically aligned, sub-20 nm SiNW arrays. Si/SiO2 core/shell NWs are obtained before removing the oxidized shell. HRTEM imaging shows that the SiNWs have excellent crystallinity.

  4. Effect of indium on photovoltaic property of n-ZnO/p-Si heterojunction device prepared using solution-synthesized ZnO nanowire film

    NASA Astrophysics Data System (ADS)

    Kathalingam, Adaikalam; Kim, Hyun-Seok; Park, Hyung-Moo; Valanarasu, Santiyagu; Mahalingam, Thaiyan

    2015-01-01

    Preparation of n-ZnO/p-Si heterostructures using solution-synthesized ZnO nanowire films and their photovoltaic characterization is reported. The solution-grown ZnO nanowire film is characterized using scanning electron microscope, electron dispersive x-ray, and optical absorption studies. Electrical and photovoltaic properties of the fabricated heterostructures are studied using e-beam-evaporated aluminum as metal contacts. In order to use transparent contact and to simultaneously collect the photogenerated carriers, sandwich-type solar cells were fabricated using ZnO nanorod films grown on p-silicon and indium tin oxide (ITO) coated glass as ITO/n-ZnO NR/p-Si. The electrical properties of these structures are analyzed from current-voltage (I-V) characteristics. ZnO nanowire film thickness-dependent photovoltaic properties are also studied. Indium metal was also deposited over the ZnO nanowires and its effects on the photovoltaic response of the devices were studied. The results demonstrated that all the samples exhibit a strong rectifying behavior indicating the diode nature of the devices. The sandwich-type ITO/n-ZnO NR/p-Si solar cells exhibit improved photovoltaic performance over the Al-metal-coated n-ZnO/p-Si structures. The indium deposition is found to show enhancement in photovoltaic behavior with a maximum open-circuit voltage (Voc) of 0.3 V and short-circuit current (Isc) of 70×10-6 A under ultraviolet light excitation.

  5. Vertically aligned ZnO nanorods via self-assembled spray pyrolyzed nanoparticles for dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Dwivedi, Charu; Dutta, V.

    2012-03-01

    Well-aligned zinc oxide (ZnO) nanorods are fabricated on indium-tin-oxide (ITO) coated glass substrates via self-assembly of ZnO nanoparticles created using continuous spray pyrolysis (CoSP) technique. The method involves pre-treatment by dip-coating the substrate with a solution comprising of zinc salt for creating a seed layer, and then spray-pyrolyzed ZnO nanoparticles self-assemble on the pre-treated substrate. The effect of the substrate pre-treatment and the deposition time (tdep) of nanoparticles is investigated. The results show that the substrate pre-treatment influences the growth of ZnO nanorods which are absent without the pre-treatment. Nanoparticle collection and nanorod growth on different substrates are done simultaneously. The thin films of as-grown nanorods are used as photoelectrode materials to fabricate dye-sensitized solar cells (DSSCs) and the effect of nanorods grown for different times has been studied. The best performance with this cell structure is found for the layer with tdep=15 min, which showed a conversion efficiency of 1.77% for the cell area of 0.25 cm2.

  6. Photoelectric properties and charge dynamics in ZnO nanowires/Cu{sub 4}Bi{sub 4}S{sub 9} and ZnO nanowires/In{sub 2}O{sub 3}/Cu{sub 4}Bi{sub 4}S{sub 9} heterostructures

    SciTech Connect

    Liu, Xiangyang E-mail: yzgu@henu.edu.cn; Wang, Shun; Gu, Yuzong E-mail: yzgu@henu.edu.cn; Zhang, Jingwei; Zhang, Jiwei

    2014-12-28

    ZnO nanowires arrays were preformed in a horizontal double-tube system. Two types of heterostructures (ZnO nanowires/Cu{sub 4}Bi{sub 4}S{sub 9} and ZnO nanowires/In{sub 2}O{sub 3}/Cu{sub 4}Bi{sub 4}S{sub 9}) and three-dimensional solar cells were fabricated with ZnO nanowires arrays as working electrode, In{sub 2}O{sub 3} as buffer layer, and Cu{sub 4}Bi{sub 4}S{sub 9} as inorganic dye and hole collector. It is suggested that two types of heterostructures have the similar absorption properties with single Cu{sub 4}Bi{sub 4}S{sub 9}. However, the results of steady state and electric field-induced surface photovoltage indicate that ZnO nanowires/In{sub 2}O{sub 3}/Cu{sub 4}Bi{sub 4}S{sub 9} exhibits the higher photovoltaic response than ZnO nanowires/Cu{sub 4}Bi{sub 4}S{sub 9}. Using the transient surface photovoltage spectroscopy, we further studied the separation and transport mechanism of photogenerated charges. Furthermore, Cu{sub 4}Bi{sub 4}S{sub 9}/In{sub 2}O{sub 3}/ZnO cells presents the better performance than Cu{sub 4}Bi{sub 4}S{sub 9}/ZnO cells and the highest efficiencies are about 6.4% and 5.2%, respectively. It is suggested that direct paths, interface barrier, built-in electric field, and double energy level matchings between conduction bands (Cu{sub 4}Bi{sub 4}S{sub 9} and In{sub 2}O{sub 3}, In{sub 2}O{sub 3} and ZnO) have obvious effect on the separation of photogenerated charges. Then we discussed the synthetic action on the charge dynamics from these factors.

  7. Low-temperature growth of aligned ZnO nanorods: effect of annealing gases on the structural and optical properties.

    PubMed

    Umar, Ahmad; Hahn, Yoon-Bong; Al-Hajry, A; Abaker, M

    2014-06-01

    Aligned ZnO nanorods were grown on ZnO/Si substrate via simple aqueous solution process at low-temperature of - 65 degrees C by using zinc nitrate and hexamethylenetetramine (HMTA). The detailed morphological and structural properties measured by FESEM, XRD, EDS and TEM confirmed that the as-grown nanorods are vertically aligned, well-crystalline possessing wurtzite hexagonal phase and grown along the [0001] direction. The room-temperature photoluminescence spectrum of the grown nanorods exhibited a strong and broad green emission and small ultraviolet emission. The as-prepared ZnO nanorods were post-annealed in nitrogen (N2) and oxygen (O2) environments and further characterized in terms of their morphological, structural and optical properties. After annealing the nanorods exhibit well-crystallinity and wurtzite hexagonal phase. Moreover, by annealing the PL spectra show the enhancement in the UV emission and suppression in the green emission. The presented results demonstrate that simply by post-annealing process, the optical properties of ZnO nanostructures can be controlled.

  8. Nanofabrication of arrays of silicon field emitters with vertical silicon nanowire current limiters and self-aligned gates

    NASA Astrophysics Data System (ADS)

    Guerrera, S. A.; Akinwande, A. I.

    2016-07-01

    We developed a fabrication process for embedding a dense array (108 cm-2) of high-aspect-ratio silicon nanowires (200 nm diameter and 10 μm tall) in a dielectric matrix and then structured/exposed the tips of the nanowires to form self-aligned gate field emitter arrays using chemical mechanical polishing (CMP). Using this structure, we demonstrated a high current density (100 A cm-2), uniform, and long lifetime (>100 h) silicon field emitter array architecture in which the current emitted by each tip is regulated by the silicon nanowire current limiter connected in series with the tip. Using the current voltage characteristics and with the aid of numerical device models, we estimated the tip radius of our field emission arrays to be ≈4.8 nm, as consistent with the tip radius measured using a scanning electron microscope (SEM).

  9. Nanofabrication of arrays of silicon field emitters with vertical silicon nanowire current limiters and self-aligned gates

    NASA Astrophysics Data System (ADS)

    Guerrera, S. A.; Akinwande, A. I.

    2016-07-01

    We developed a fabrication process for embedding a dense array (108 cm‑2) of high-aspect-ratio silicon nanowires (200 nm diameter and 10 μm tall) in a dielectric matrix and then structured/exposed the tips of the nanowires to form self-aligned gate field emitter arrays using chemical mechanical polishing (CMP). Using this structure, we demonstrated a high current density (100 A cm‑2), uniform, and long lifetime (>100 h) silicon field emitter array architecture in which the current emitted by each tip is regulated by the silicon nanowire current limiter connected in series with the tip. Using the current voltage characteristics and with the aid of numerical device models, we estimated the tip radius of our field emission arrays to be ≈4.8 nm, as consistent with the tip radius measured using a scanning electron microscope (SEM).

  10. Nanofabrication of arrays of silicon field emitters with vertical silicon nanowire current limiters and self-aligned gates.

    PubMed

    Guerrera, S A; Akinwande, A I

    2016-07-22

    We developed a fabrication process for embedding a dense array (10(8) cm(-2)) of high-aspect-ratio silicon nanowires (200 nm diameter and 10 μm tall) in a dielectric matrix and then structured/exposed the tips of the nanowires to form self-aligned gate field emitter arrays using chemical mechanical polishing (CMP). Using this structure, we demonstrated a high current density (100 A cm(-2)), uniform, and long lifetime (>100 h) silicon field emitter array architecture in which the current emitted by each tip is regulated by the silicon nanowire current limiter connected in series with the tip. Using the current voltage characteristics and with the aid of numerical device models, we estimated the tip radius of our field emission arrays to be ≈4.8 nm, as consistent with the tip radius measured using a scanning electron microscope (SEM). PMID:27292120

  11. Surface state modulation through wet chemical treatment as a route to controlling the electrical properties of ZnO nanowire arrays investigated with XPS

    NASA Astrophysics Data System (ADS)

    Lord, Alex M.; Maffeis, Thierry G.; Allen, Martin W.; Morgan, David; Davies, Philip R.; Jones, Daniel R.; Evans, Jonathan E.; Smith, Nathan A.; Wilks, Steve P.

    2014-11-01

    ZnO is a wide bandgap semiconductor that has many potential applications including solar cell electrodes, transparent thin film transistors and gas/biological sensors. Since the surfaces of ZnO materials have no amorphous or oxidised layers, they are very environmentally sensitive, making control of their semiconductor properties challenging. In particular, the electronic properties of ZnO nanostructures are dominated by surface effects while surface conduction layers have been observed in thin films and bulk crystals. Therefore, the ability to use the ZnO materials in a controlled way depends on the development of simple techniques to modulate their surface electronic properties. Here, we use monochromatic x-ray photoelectron spectroscopy (XPS) to investigate the use of different wet chemical treatments (EtOH, H2O2) to control the electronic properties of ZnO nanowires by modulating the surface depletion region. The valence band and core level XPS spectra are used to explore the relationship between the surface chemistry of the nanowires and the surface band bending.

  12. High-performance ZnO nanowire field-effect transistor with forming gas treated SiO2 gate dielectrics

    NASA Astrophysics Data System (ADS)

    Qian, Haolei; Wang, Yewu; Fang, Yanjun; Gu, Lin; Lu, Ren; Sha, Jian

    2015-04-01

    The SiO2 films thermally grown on Si wafer have been annealed in forming atmosphere (N2:H2 = 9:1) prior to use as gate insulators in ZnO nanowire field effect transistors (ZnO NW-FETs). Without the annealing process, ZnO NW-FETs exhibit very poor performance, and most of them even cannot be depleted under a high gate voltage of -100 V; however, with the annealing process in forming atmosphere, the device characteristics can be significantly improved, exhibiting a large turn on-off ratio of ˜104 and a low sub-threshold swing ˜1 V/decade. The pre-annealing treatment of SiO2 (300 nm)/p-Si in N2/H2 ambient may significantly reduce the number of non-bridging oxygen atoms, which blocks the interaction between ZnO nanowires and SiO2 surface, and finally enhances the electrical characteristics of the back-gated ZnO NW-FETs. In addition, the FET electrode fabrication process introduced in this paper is much simpler than the traditional photo-lithography and lift-off method, which has potential applications in future device fabrication.

  13. High-performance ZnO nanowire field-effect transistor with forming gas treated SiO{sub 2} gate dielectrics

    SciTech Connect

    Qian, Haolei; Wang, Yewu E-mail: phyjsha@zju.edu.cn; Fang, Yanjun; Gu, Lin; Lu, Ren; Sha, Jian E-mail: phyjsha@zju.edu.cn

    2015-04-28

    The SiO{sub 2} films thermally grown on Si wafer have been annealed in forming atmosphere (N{sub 2}:H{sub 2} = 9:1) prior to use as gate insulators in ZnO nanowire field effect transistors (ZnO NW-FETs). Without the annealing process, ZnO NW-FETs exhibit very poor performance, and most of them even cannot be depleted under a high gate voltage of −100 V; however, with the annealing process in forming atmosphere, the device characteristics can be significantly improved, exhibiting a large turn on-off ratio of ∼10{sup 4} and a low sub-threshold swing ∼1 V/decade. The pre-annealing treatment of SiO{sub 2} (300 nm)/p-Si in N{sub 2}/H{sub 2} ambient may significantly reduce the number of non-bridging oxygen atoms, which blocks the interaction between ZnO nanowires and SiO{sub 2} surface, and finally enhances the electrical characteristics of the back-gated ZnO NW-FETs. In addition, the FET electrode fabrication process introduced in this paper is much simpler than the traditional photo-lithography and lift-off method, which has potential applications in future device fabrication.

  14. UV light sensing properties of Sm doped vertically aligned ZnO nanorod arrays

    SciTech Connect

    Kumar, D. Ranjith; Ranjith, K. S.; Rajendrakumar, R. T.

    2015-06-24

    Samarium doped ZnO nanorods were grown on silicon substrate by using vapor phase transport method (VPT) with the growth temperature of 950°C. The synthesized nanorods were characterized by XRD, field emission scanning electron microscopy, Raman spectra, and photocurrent measurements. The XRD result revealed that Sm was successfully doped into lattice plane of hexagonal ZnO nanorods. The FESEM result confirms the pure ZnO has nanorod like morphology with an average diameter and length of 130nm and 10µm respectively. The above observation is supported by the Micro-Raman spectroscopy result. The photocurrent in the visible region has been significantly enhanced due to deposition of Sm on the surface of the ZnO nanorods. Sm acts as a visible sensitizer because of its lower band gap compared to ZnO.

  15. A pn heterojunction diode constructed with a n-type ZnO nanowire and a p-type HgTe nanoparticle thin film

    NASA Astrophysics Data System (ADS)

    Seong, Hojun; Cho, Kyoungah; Kim, Sangsig

    2009-01-01

    We demonstrate a pn heterojunction diode constructed with a n-type ZnO nanowire (NW) and a p-type HgTe nanoparticle (NP) thin film on a SiO2/p-Si substrate. For the pn heterojunction diode, the rectifying characteristics of both the dark current and the photocurrent excited by 633 nm wavelength light were observed, but the photocurrent excited by 325 nm wavelength light possesses Ohmic characteristics. The optoelectronic characteristics of the pn heterojunction diode were compared with those of the ZnO NW and HgTe NP thin film composing it.

  16. Study of Ac Dielectrophoretic Process of SiC Nanowires: A Universal Method for Alignment of Semiconductor Nanowires.

    PubMed

    Yao, Limei; Cui, Yan; Cong, Haining; Zheng, Jinju; Shang, Minghui; Yang, Zuobao; Yang, Weiyou; Wei, Guodong; Gao, Fengmei

    2016-04-01

    In this study, the dielectrophoretic processes of SiC nanowires suspended in three typical solvents, (highly purified water, ethanol and isopropanol) were systematically investigated. Optical microscope and SEM characterizations were used to observe the order of SiC nanowires on the surface of gold microchannels. The gold microchannels were induced by Ac dielectrophoresis of the corresponding dispersion solutions of SiC nanowires, with a concentration of 0.1 mg/mL. The study shows that the dielectrophoresis process is an effective way of synthesizing highly oriented SiC nanoarrays using isopropanol solution. The results also show that the arrangement of SiC nanowires on the interdigital electrode configuration not only depend on the kind of solvent used, but also on the applied frequency (1000 Hz~1 MHz) and voltage (1 V~20 V). PMID:27451739

  17. Study of Ac Dielectrophoretic Process of SiC Nanowires: A Universal Method for Alignment of Semiconductor Nanowires.

    PubMed

    Yao, Limei; Cui, Yan; Cong, Haining; Zheng, Jinju; Shang, Minghui; Yang, Zuobao; Yang, Weiyou; Wei, Guodong; Gao, Fengmei

    2016-04-01

    In this study, the dielectrophoretic processes of SiC nanowires suspended in three typical solvents, (highly purified water, ethanol and isopropanol) were systematically investigated. Optical microscope and SEM characterizations were used to observe the order of SiC nanowires on the surface of gold microchannels. The gold microchannels were induced by Ac dielectrophoresis of the corresponding dispersion solutions of SiC nanowires, with a concentration of 0.1 mg/mL. The study shows that the dielectrophoresis process is an effective way of synthesizing highly oriented SiC nanoarrays using isopropanol solution. The results also show that the arrangement of SiC nanowires on the interdigital electrode configuration not only depend on the kind of solvent used, but also on the applied frequency (1000 Hz~1 MHz) and voltage (1 V~20 V).

  18. Characteristics of Al substituted nanowires fabricated by self-aligned growth for future large scale integration interconnects

    NASA Astrophysics Data System (ADS)

    Kudo, Hiroshi; Kurahashi, Teruo

    2011-06-01

    Substituted Al nanowires for use in future large scale integration interconnects were fabricated by self-aligned growth. The resistivity of an Al substituted nanowire 80 nm in width, 100 nm in height, and 20 μm in length was 4.7 μΩ cm, which is 48% lower than that of an Al nanowire with the same dimensions fabricated using a bottom-up approach. The variation in the resistivity was in a narrow range (14%) over a Si wafer. The TEM imaging revealed that the Al substituted nanowire had a bamboo-like structure with grains larger than 1.6 μm. The electromigration activation energy was 0.72 eV, which is comparable to that of a pure Al wire with a bamboo-like structure. The product of the critical current density and wire length was 1.3 × 103 A/cm at 250 °C; 2.1 times higher than that of a pure Al wire with a polycrystalline structure. The acceleration of electromigration due to current density was 2.0, indicating that incubation time dominates electromigration lifetime. The prolonged incubation time observed in the electromigration test is attributed to the reduction in electromigration-induced mass transport due to the microstructure of the Al substituted nanowire. Even the formation of a small void immediately after incubation may be a fatal defect for nanoscale Al wires.

  19. Island nucleation, optical and ferromagnetic properties of vertically aligned secondary growth ZnO : Cu nanorod arrays

    NASA Astrophysics Data System (ADS)

    Huang, Jun; Zhu, Liping; Hu, Liang; Liu, Shijiang; Zhang, Jie; Zhang, Honghai; Yang, Xiaopeng; Sun, Luwei; Li, Dehui; Ye, Zhizhen

    2012-02-01

    The paper reports an island nucleation and secondary growth of aligned ZnO : Cu nanorod arrays via thermal vapor phase transport. Results analysis indicates that the secondary segment is epitaxially grown on the ZnO : Cu nanorods with the radius strongly dependent on temperature and the concentration of zinc vapor. The modified characteristic radius (Rc) model is used to explain the nucleation and secondary growth process. Temperature-dependent photoluminescence spectra indicate that the band gap emission of the secondary growth nanorods is greatly restrained. A controversial 3.31 eV emission (A line) and two different donor-acceptor pair (DAP) recombinations at 3.24 eV and 2.48 eV are observed at 13 K. The A line shows a different behavior from the two DAP emissions during the heat-up process. Intrinsic room temperature ferromagnetism (RTFM) is observed in the secondary growth ZnO : Cu nanorods and it can be explained by oxygen vacancy and copper defects related to bound magnetic polar (BMP) or double exchange mechanism.The paper reports an island nucleation and secondary growth of aligned ZnO : Cu nanorod arrays via thermal vapor phase transport. Results analysis indicates that the secondary segment is epitaxially grown on the ZnO : Cu nanorods with the radius strongly dependent on temperature and the concentration of zinc vapor. The modified characteristic radius (Rc) model is used to explain the nucleation and secondary growth process. Temperature-dependent photoluminescence spectra indicate that the band gap emission of the secondary growth nanorods is greatly restrained. A controversial 3.31 eV emission (A line) and two different donor-acceptor pair (DAP) recombinations at 3.24 eV and 2.48 eV are observed at 13 K. The A line shows a different behavior from the two DAP emissions during the heat-up process. Intrinsic room temperature ferromagnetism (RTFM) is observed in the secondary growth ZnO : Cu nanorods and it can be explained by oxygen vacancy and copper

  20. Design Concepts, Fabrication and Advanced Characterization Methods of Innovative Piezoelectric Sensors Based on ZnO Nanowires.

    PubMed

    Araneo, Rodolfo; Rinaldi, Antonio; Notargiacomo, Andrea; Bini, Fabiano; Pea, Marialilia; Celozzi, Salvatore; Marinozzi, Franco; Lovat, Giampiero

    2014-12-08

    Micro- and nano-scale materials and systems based on zinc oxide are expected to explode in their applications in the electronics and photonics, including nano-arrays of addressable optoelectronic devices and sensors, due to their outstanding properties, including semiconductivity and the presence of a direct bandgap, piezoelectricity, pyroelectricity and biocompatibility. Most applications are based on the cooperative and average response of a large number of ZnO micro/nanostructures. However, in order to assess the quality of the materials and their performance, it is fundamental to characterize and then accurately model the specific electrical and piezoelectric properties of single ZnO structures. In this paper, we report on focused ion beam machined high aspect ratio nanowires and their mechanical and electrical (by means of conductive atomic force microscopy) characterization. Then, we investigate the suitability of new power-law design concepts to accurately model the relevant electrical and mechanical size-effects, whose existence has been emphasized in recent reviews.

  1. Phototoxic effects of zinc oxide nanowires (ZnO NWs) complexed with 5-ALA in RD cell line

    NASA Astrophysics Data System (ADS)

    Fakhar-e-Alam, M.; Ali, S. M. U.; Ibupoto, Z. H.; Atif, M.; Willander, M.

    2011-12-01

    In this current study, we have manifested the photosensitizing effects of zinc oxide nanowires (ZnO NWs) in dark as well as under ultra violet light exposure with 240 nm of UV region, using human muscle cancer (Rhybdomyosarcoma cells, RD) as in vitro experimental model. We have fabricated ZnO-NWs on the tip of borosilicate glass capillaries (0.5 μm diameter) and were conjugated using 5-aminolevulinic acid (ALA) for the efficient intracellular drug delivery. When ZnO NWs were applied on tumor localizing drugs with non ionizing illumination, then excited drug liberates reactive oxygen species (ROS), effecting mitochondria and nucleus resulting in cell necrosis within few minutes. During investigations, we observed that when ZnO-NWs grown on intracellular tip was excited by using 240 nm of UV light, as a resultant 625 nm of emitted red light were used as appetizer in the presence of 5-ALA for chemical reaction, which produces singlet oxygen, responsible for cell necrosis. Morphological changes of necrosed cells were examined under microscopy. Moreover, Viability of controlled and treated RD cells with optimum dose of light (UV-Visible) has been assessed by MTT assay as well as reactive oxygen species (ROS) detection.

  2. Design Concepts, Fabrication and Advanced Characterization Methods of Innovative Piezoelectric Sensors Based on ZnO Nanowires

    PubMed Central

    Araneo, Rodolfo; Rinaldi, Antonio; Notargiacomo, Andrea; Bini, Fabiano; Pea, Marialilia; Celozzi, Salvatore; Marinozzi, Franco; Lovat, Giampiero

    2014-01-01

    Micro- and nano-scale materials and systems based on zinc oxide are expected to explode in their applications in the electronics and photonics, including nano-arrays of addressable optoelectronic devices and sensors, due to their outstanding properties, including semiconductivity and the presence of a direct bandgap, piezoelectricity, pyroelectricity and biocompatibility. Most applications are based on the cooperative and average response of a large number of ZnO micro/nanostructures. However, in order to assess the quality of the materials and their performance, it is fundamental to characterize and then accurately model the specific electrical and piezoelectric properties of single ZnO structures. In this paper, we report on focused ion beam machined high aspect ratio nanowires and their mechanical and electrical (by means of conductive atomic force microscopy) characterization. Then, we investigate the suitability of new power-law design concepts to accurately model the relevant electrical and mechanical size-effects, whose existence has been emphasized in recent reviews. PMID:25494351

  3. Glucose biosensor based on functionalized ZnO nanowire/graphite films dispersed on a Pt electrode

    NASA Astrophysics Data System (ADS)

    Gallay, P.; Tosi, E.; Madrid, R.; Tirado, M.; Comedi, D.

    2016-10-01

    We present a glucose biosensor based on ZnO nanowire self-sustained films grown on compacted graphite flakes by the vapor transport method. Nanowire/graphite films were fragmented in water, filtered to form a colloidal suspension, subsequently functionalized with glucose oxidase and finally transferred to a metal electrode (Pt). The obtained devices were evaluated using scanning electron microscopy, energy-dispersive x-ray spectroscopy, cyclic voltammetry and chronoamperometry. The electrochemical responses of the devices were determined in buffer solutions with successive glucose aggregates using a tripolar electrode system. The nanostructured biosensors showed excellent analytical performance, with linear response to glucose concentrations, high sensitivity of up to ≈17 μA cm-2 mM-1 in the 0.03-1.52 mM glucose concentration range, relatively low Michaelis-Menten constant, excellent reproducibility and a fast response. The detection limits are more than an order of magnitude lower than those achievable in commercial biosensors for glucose control, which is promising for the development of glucose monitoring methods that do not require blood extraction from potentially diabetic patients. The strong detection enhancements provided by the functionalized nanostructures are much larger than the electrode surface-area increase and are discussed in terms of the physical and chemical mechanisms involved in the detection and transduction processes.

  4. Glucose biosensor based on functionalized ZnO nanowire/graphite films dispersed on a Pt electrode.

    PubMed

    Gallay, P; Tosi, E; Madrid, R; Tirado, M; Comedi, D

    2016-10-21

    We present a glucose biosensor based on ZnO nanowire self-sustained films grown on compacted graphite flakes by the vapor transport method. Nanowire/graphite films were fragmented in water, filtered to form a colloidal suspension, subsequently functionalized with glucose oxidase and finally transferred to a metal electrode (Pt). The obtained devices were evaluated using scanning electron microscopy, energy-dispersive x-ray spectroscopy, cyclic voltammetry and chronoamperometry. The electrochemical responses of the devices were determined in buffer solutions with successive glucose aggregates using a tripolar electrode system. The nanostructured biosensors showed excellent analytical performance, with linear response to glucose concentrations, high sensitivity of up to ≈17 μA cm(-2) mM(-1) in the 0.03-1.52 mM glucose concentration range, relatively low Michaelis-Menten constant, excellent reproducibility and a fast response. The detection limits are more than an order of magnitude lower than those achievable in commercial biosensors for glucose control, which is promising for the development of glucose monitoring methods that do not require blood extraction from potentially diabetic patients. The strong detection enhancements provided by the functionalized nanostructures are much larger than the electrode surface-area increase and are discussed in terms of the physical and chemical mechanisms involved in the detection and transduction processes. PMID:27622391

  5. Phosphorous doped ZnO nanowires: acceptor-related cathodoluminescence and p-type conducting FET-characteristics

    NASA Astrophysics Data System (ADS)

    Cao, B. Q.; Lorenz, M.; von Wenckstern, H.; Czekalla, C.; Brandt, M.; Lenzner, J.; Benndorf, G.; Biehne, G.; Grundmann, M.

    2008-02-01

    Phosphorous-doped ZnO (ZnO:P) nanowires were prepared by a high-pressure pulsed laser deposition process. To extend the size range of available wires, μm-thick ZnO:P microwires were grown additionally by a direct carbothermal deposition process. Low-temperature cathodoluminescence of single ZnO:P nanowires grown by both processes exhibit characteristic phosphorus acceptor-related peaks: neutral acceptor-bound exciton emission ((A 0, X), 3.356 eV), free-electron to neutral-acceptor emission ((e, A 0), 3.314 eV), and donor-to-acceptor pair emission (DAP, ~3.24 and ~3.04 eV). This proves that stable phosphorus acceptor levels have been induced into the ZnO:P nano- and microwires. From the quantitative evaluation of the spectroscopic features we deduct an acceptor binding energy of 122 meV. The ZnO:P microwires were used as channels in bottom-gate field effect transistors (FET) built on Si substrates with SiO II gate oxide. The electrical FET-characteristics of several wires show reproducibly clear qualitative indication for p-type conductivity for variation of gate voltage. This behavior is opposite to that of nominally undoped, n-type conducting wires investigated for comparison. The p-type conductivity was found to be stable over more than six months.

  6. Glucose biosensor based on functionalized ZnO nanowire/graphite films dispersed on a Pt electrode.

    PubMed

    Gallay, P; Tosi, E; Madrid, R; Tirado, M; Comedi, D

    2016-10-21

    We present a glucose biosensor based on ZnO nanowire self-sustained films grown on compacted graphite flakes by the vapor transport method. Nanowire/graphite films were fragmented in water, filtered to form a colloidal suspension, subsequently functionalized with glucose oxidase and finally transferred to a metal electrode (Pt). The obtained devices were evaluated using scanning electron microscopy, energy-dispersive x-ray spectroscopy, cyclic voltammetry and chronoamperometry. The electrochemical responses of the devices were determined in buffer solutions with successive glucose aggregates using a tripolar electrode system. The nanostructured biosensors showed excellent analytical performance, with linear response to glucose concentrations, high sensitivity of up to ≈17 μA cm(-2) mM(-1) in the 0.03-1.52 mM glucose concentration range, relatively low Michaelis-Menten constant, excellent reproducibility and a fast response. The detection limits are more than an order of magnitude lower than those achievable in commercial biosensors for glucose control, which is promising for the development of glucose monitoring methods that do not require blood extraction from potentially diabetic patients. The strong detection enhancements provided by the functionalized nanostructures are much larger than the electrode surface-area increase and are discussed in terms of the physical and chemical mechanisms involved in the detection and transduction processes.

  7. Growth, patterning and alignment of organolead iodide perovskite nanowires for optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Deng, Hui; Dong, Dongdong; Qiao, Keke; Bu, Lingling; Li, Bing; Yang, Dun; Wang, Hong-En; Cheng, Yibing; Zhao, Zhixin; Tang, Jiang; Song, Haisheng

    2015-02-01

    Organolead halide perovskites are becoming intriguing materials applied in optoelectronics. In the present work, organolead iodide perovskite (OIP) nanowires (NWs) have been fabricated by a one step self-assembly method. The controllable NW distributions were implemented by a series of facile techniques: monolayer and small diameter NWs were prepared by precursor concentration tuning; NW patterning was achieved via selected area treatment assisted by a mask; NW alignment was implemented by modified evaporation-induced self-assembly (EISA). The synthesized multifunctional NWs were further applied in photodetectors (PDs) and solar cells as application demos. The PD performances have reached 1.32 AW-1 for responsivity, 2.5 × 1012 Jones for detectivity and 0.3 ms for response speed, superior to OIP films and other typical inorganic NW based PD performances. An energy conversion efficiency of ~2.5% has been obtained for NW film based solar cells. The facile fabrication process, controllable distribution and optoelectronic applications make the OIP NWs promising building blocks for future optoelectronics, especially for low dimensional devices.Organolead halide perovskites are becoming intriguing materials applied in optoelectronics. In the present work, organolead iodide perovskite (OIP) nanowires (NWs) have been fabricated by a one step self-assembly method. The controllable NW distributions were implemented by a series of facile techniques: monolayer and small diameter NWs were prepared by precursor concentration tuning; NW patterning was achieved via selected area treatment assisted by a mask; NW alignment was implemented by modified evaporation-induced self-assembly (EISA). The synthesized multifunctional NWs were further applied in photodetectors (PDs) and solar cells as application demos. The PD performances have reached 1.32 AW-1 for responsivity, 2.5 × 1012 Jones for detectivity and 0.3 ms for response speed, superior to OIP films and other typical inorganic

  8. Inorganic/organic hybrid solar cells: optimal carrier transport in vertically aligned silicon nanowire arrays

    NASA Astrophysics Data System (ADS)

    Sato, Keisuke; Dutta, Mrinal; Fukata, Naoki

    2014-05-01

    Inorganic/organic hybrid radial heterojunction solar cells that combine vertically-aligned n-type silicon nanowires (SiNWs) with poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) have great potential for replacing commercial Si solar cells. The chief advantage of such solar cells is that they exhibit higher absorbance for a given thickness than commercial Si solar cells, due to incident light-trapping within the NW arrays, thus enabling lower-cost solar cell production. We report herein on the effects of NW length, annealing and surface electrode on the device performance of SiNW/PEDOT:PSS hybrid radial heterojunction solar cells. The power conversion efficiency (PCE) of the obtained SiNW/PEDOT:PSS hybrid solar cells can be optimized by tuning the thickness of the surface electrode, and the etching conditions during NW formation and post-annealing. The PCE of 9.3% is obtained by forming efficient transport pathways for photogenerated charge carriers to electrodes. Our approach is a significant contribution to design of high-performance and low-cost inorganic/organic hybrid heterojunction solar cells.Inorganic/organic hybrid radial heterojunction solar cells that combine vertically-aligned n-type silicon nanowires (SiNWs) with poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) have great potential for replacing commercial Si solar cells. The chief advantage of such solar cells is that they exhibit higher absorbance for a given thickness than commercial Si solar cells, due to incident light-trapping within the NW arrays, thus enabling lower-cost solar cell production. We report herein on the effects of NW length, annealing and surface electrode on the device performance of SiNW/PEDOT:PSS hybrid radial heterojunction solar cells. The power conversion efficiency (PCE) of the obtained SiNW/PEDOT:PSS hybrid solar cells can be optimized by tuning the thickness of the surface electrode, and the etching conditions during NW formation and

  9. GaAs nanowires grown on Al-doped ZnO buffer layer

    NASA Astrophysics Data System (ADS)

    Haggren, Tuomas; Perros, Alexander; Dhaka, Veer; Huhtio, Teppo; Jussila, Henri; Jiang, Hua; Ruoho, Mikko; Kakko, Joona-Pekko; Kauppinen, Esko; Lipsanen, Harri

    2013-08-01

    We report a pathway to grow GaAs nanowires on a variety of substrates using a combination of atomic layer deposition and metallo-organic vapor phase epitaxy (MOVPE). GaAs nanowires were grown via MOVPE at 430-540 °C on an atomic-layer-deposited Al:ZnO buffer layer. The resulting nanowires were affected only by the properties of the buffer layer, allowing nanowire growth on a number of substrates that withstand ˜400 °C. The growth occurred in two phases: initial in-plane growth and subsequent out-plane growth. The nanowires grown exhibited a strong photoluminescence signal both at room temperature and at 12 K. The 12 K photoluminescence peak was at 1.47 eV, which was attributed to Zn autodoping from the buffer layer. The crystal structure was zincblende plagued with either twin planes or diagonal defect planes, which were related to perturbations in the seed particle during the growth. The used method combines substrates with variable properties to nanowire growth on a transparent and conductive Al:ZnO buffer layer.

  10. Hydrothermal growth and characterization of vertically well-aligned and dense ZnO nanorods on glass and silicon using a simple optimizer system

    NASA Astrophysics Data System (ADS)

    Mohammad, Sabah M.; Hassan, Z.; Ahmed, Naser M.; Talib, Rawnaq A.; Abd-Alghafour, Nabeel M.; Omar, A. F.

    2016-07-01

    Vertically, well-aligned and high density ZnO nanorods were successfully hydrothermally grown on glass and silicon substrates using a simple and low cost system. The mechanism of synthesis of ZnO nanorods, generated with our system under hydrothermal conditions, is investigated in this report. Field-emission scanning electron microscopy indicated that the fabricated ZnO nanorods on both substrates have hexagonal shape with diameters ranging from 20 nm to 70 nm which grew vertically from the substrate. XRD analysis confirms the formation of wurtzite ZnO phase with a preferred orientation along (002) direction perpendicular on the substrate and enhanced crystallinity. The low value of the tensile strain (0.126 %) revealed that ZnO nanorods preferred to grow along the c-axis for both substrates. Photoluminescence spectra exhibited a strong, sharp UV near band edge emission peak with narrow FWHM values for both samples.

  11. Low-Cost and High-Productivity Three-Dimensional Nanocapacitors Based on Stand-Up ZnO Nanowires for Energy Storage.

    PubMed

    Wei, Lei; Liu, Qi-Xuan; Zhu, Bao; Liu, Wen-Jun; Ding, Shi-Jin; Lu, Hong-Liang; Jiang, Anquan; Zhang, David Wei

    2016-12-01

    Highly powered electrostatic capacitors based on nanostructures with a high aspect ratio are becoming critical for advanced energy storage technology because of their high burst power and energy storage capability. We report the fabrication process and the electrical characteristics of high capacitance density capacitors with three-dimensional solid-state nanocapacitors based on a ZnO nanowire template. Stand-up ZnO nanowires are grown face down on p-type Si substrates coated with a ZnO seed layer using a hydrothermal method. Stacks of AlZnO/Al2O3/AlZnO are then deposited sequentially on the ZnO nanowires using atomic layer deposition. The fabricated capacitor has a high capacitance density up to 92 fF/μm(2) at 1 kHz (around ten times that of the planar capacitor without nanowires) and an extremely low leakage current density of 3.4 × 10(-8) A/cm(2) at 2 V for a 5-nm Al2O3 dielectric. Additionally, the charge-discharge characteristics of the capacitor were investigated, indicating that the resistance-capacitance time constants were 550 ns for both the charging and discharging processes and the time constant was not dependent on the voltage. This reflects good power characteristics of the fabricated capacitors. Therefore, the current work provides an exciting strategy to fabricate low-cost and easily processable, high capacitance density capacitors for energy storage. PMID:27097913

  12. Low-Cost and High-Productivity Three-Dimensional Nanocapacitors Based on Stand-Up ZnO Nanowires for Energy Storage.

    PubMed

    Wei, Lei; Liu, Qi-Xuan; Zhu, Bao; Liu, Wen-Jun; Ding, Shi-Jin; Lu, Hong-Liang; Jiang, Anquan; Zhang, David Wei

    2016-12-01

    Highly powered electrostatic capacitors based on nanostructures with a high aspect ratio are becoming critical for advanced energy storage technology because of their high burst power and energy storage capability. We report the fabrication process and the electrical characteristics of high capacitance density capacitors with three-dimensional solid-state nanocapacitors based on a ZnO nanowire template. Stand-up ZnO nanowires are grown face down on p-type Si substrates coated with a ZnO seed layer using a hydrothermal method. Stacks of AlZnO/Al2O3/AlZnO are then deposited sequentially on the ZnO nanowires using atomic layer deposition. The fabricated capacitor has a high capacitance density up to 92 fF/μm(2) at 1 kHz (around ten times that of the planar capacitor without nanowires) and an extremely low leakage current density of 3.4 × 10(-8) A/cm(2) at 2 V for a 5-nm Al2O3 dielectric. Additionally, the charge-discharge characteristics of the capacitor were investigated, indicating that the resistance-capacitance time constants were 550 ns for both the charging and discharging processes and the time constant was not dependent on the voltage. This reflects good power characteristics of the fabricated capacitors. Therefore, the current work provides an exciting strategy to fabricate low-cost and easily processable, high capacitance density capacitors for energy storage.

  13. Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts.

    PubMed

    Fülöp, G; d'Hollosy, S; Hofstetter, L; Baumgartner, A; Nygård, J; Schönenberger, C; Csonka, S

    2016-05-13

    Advanced synthesis of semiconductor nanowires (NWs) enables their application in diverse fields, notably in chemical and electrical sensing, photovoltaics, or quantum electronic devices. In particular, indium arsenide (InAs) NWs are an ideal platform for quantum devices, e.g. they may host topological Majorana states. While the synthesis has been continously perfected, only a few techniques have been developed to tailor individual NWs after growth. Here we present three wet chemical etch methods for the post-growth morphological engineering of InAs NWs on the sub-100 nm scale. The first two methods allow the formation of self-aligned electrical contacts to etched NWs, while the third method results in conical shaped NW profiles ideal for creating smooth electrical potential gradients and shallow barriers. Low temperature experiments show that NWs with etched segments have stable transport characteristics and can serve as building blocks of quantum electronic devices. As an example we report the formation of a single electrically stable quantum dot between two etched NW segments.

  14. Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts

    NASA Astrophysics Data System (ADS)

    Fülöp, G.; d'Hollosy, S.; Hofstetter, L.; Baumgartner, A.; Nygård, J.; Schönenberger, C.; Csonka, S.

    2016-05-01

    Advanced synthesis of semiconductor nanowires (NWs) enables their application in diverse fields, notably in chemical and electrical sensing, photovoltaics, or quantum electronic devices. In particular, indium arsenide (InAs) NWs are an ideal platform for quantum devices, e.g. they may host topological Majorana states. While the synthesis has been continously perfected, only a few techniques have been developed to tailor individual NWs after growth. Here we present three wet chemical etch methods for the post-growth morphological engineering of InAs NWs on the sub-100 nm scale. The first two methods allow the formation of self-aligned electrical contacts to etched NWs, while the third method results in conical shaped NW profiles ideal for creating smooth electrical potential gradients and shallow barriers. Low temperature experiments show that NWs with etched segments have stable transport characteristics and can serve as building blocks of quantum electronic devices. As an example we report the formation of a single electrically stable quantum dot between two etched NW segments.

  15. Atomic scale alignment of copper-germanide contacts for ge nanowire metal oxide field effect transistors.

    PubMed

    Burchhart, T; Lugstein, A; Hyun, Y J; Hochleitner, G; Bertagnolli, E

    2009-11-01

    In this letter, we report on the formation, of copper-germanide/germanium nanowire (NW) heterostructures with atomically sharp interfaces. The copper-germanide (Cu3Ge) formation process is enabled by a chemical reaction between metallic Cu pads and vapor-liquid-solid (VLS) grown Ge-NWs. The atomic scale aligned formation of the Cu3Ge segments is controlled by in situ SEM monitoring at 310 degrees C thereby enabling length control of the intrinsic Ge-NW down to a few nanometers. The single crystal Cu3Ge/Ge/Cu3Ge heterostructures were used to fabricate p-type Ge-NW field effect transistors with Schottky Cu3Ge source/drain contacts. Temperature dependent I /V measurements revealed the metallic properties of the Cu3Ge contacts with a maximum current density of 5 x 10(7) A/cm2. According to the thermoionic emission theory, we determined an effective Schottky barrier height of 218 meV.

  16. Inorganic/organic hybrid solar cells: optimal carrier transport in vertically aligned silicon nanowire arrays.

    PubMed

    Sato, Keisuke; Dutta, Mrinal; Fukata, Naoki

    2014-06-01

    Inorganic/organic hybrid radial heterojunction solar cells that combine vertically-aligned n-type silicon nanowires (SiNWs) with poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) have great potential for replacing commercial Si solar cells. The chief advantage of such solar cells is that they exhibit higher absorbance for a given thickness than commercial Si solar cells, due to incident light-trapping within the NW arrays, thus enabling lower-cost solar cell production. We report herein on the effects of NW length, annealing and surface electrode on the device performance of SiNW/PEDOT:PSS hybrid radial heterojunction solar cells. The power conversion efficiency (PCE) of the obtained SiNW/PEDOT:PSS hybrid solar cells can be optimized by tuning the thickness of the surface electrode, and the etching conditions during NW formation and post-annealing. The PCE of 9.3% is obtained by forming efficient transport pathways for photogenerated charge carriers to electrodes. Our approach is a significant contribution to design of high-performance and low-cost inorganic/organic hybrid heterojunction solar cells.

  17. Massive transfer of vertically aligned Si nanowire array onto alien substrates and their characteristics

    NASA Astrophysics Data System (ADS)

    Shiu, Shu-Chia; Hung, Shih-Che; Chao, Jiun-Jie; Lin, Ching-Fuh

    2009-07-01

    Si nanowires (NWs) are promising materials for future electronic, photovoltaic, and sensor applications. So far the Si NWs are mainly formed on particular substrates or at high temperatures, greatly limiting their application flexibility. Here we report a low temperature process for forming and massively transferring vertically aligned Si NWs on alien substrates with a large density of about (3-5) × 10 7 NWs/mm 2. The X-ray diffraction spectrum reveals that the transferred NWs exhibit almost the same crystal property as the bulk Si. Our investigation further shows that the transferred NWs have exceptional optical characteristics. The transferred Si NWs of 12.14 μm exhibit the transmittance as low as 0.3% in the near infrared region and 0.07% in the visible region. The extracted absorption coefficient of Si NWs in the near infrared region is about 3 × 10 3 cm -1, over 30 times larger than that of the bulk Si. Because of the low temperature process, it enables a large variety of alien substrates such as glass and plastics to be used. In addition, the exceptional properties of the transferred NWs offer potential applications for photovoltaic, photo-detectors, sensors, and flexible electronics.

  18. Insertion of Vertically Aligned Nanowires into Living Cells by Inkjet Printing of Cells.

    PubMed

    Lee, Donggyu; Lee, Daehee; Won, Yulim; Hong, Hyeonaug; Kim, Yongjae; Song, Hyunwoo; Pyun, Jae-Chul; Cho, Yong Soo; Ryu, Wonhyoung; Moon, Jooho

    2016-03-01

    Effective insertion of vertically aligned nanowires (NWs) into cells is critical for bioelectrical and biochemical devices, biological delivery systems, and photosynthetic bioenergy harvesting. However, accurate insertion of NWs into living cells using scalable processes has not yet been achieved. Here, NWs are inserted into living Chlamydomonas reinhardtii cells (Chlamy cells) via inkjet printing of the Chlamy cells, representing a low-cost and large-scale method for inserting NWs into living cells. Jetting conditions and printable bioink composed of living Chlamy cells are optimized to achieve stable jetting and precise ink deposition of bioink for indentation of NWs into Chlamy cells. Fluorescence confocal microscopy is used to verify the viability of Chlamy cells after inkjet printing. Simple mechanical considerations of the cell membrane and droplet kinetics are developed to control the jetting force to allow penetration of the NWs into cells. The results suggest that inkjet printing is an effective, controllable tool for stable insertion of NWs into cells with economic and scale-related advantages. PMID:26800021

  19. Aligned silver nanowire-based transparent electrodes for engineering polarisation-selective optoelectronics

    PubMed Central

    Park, Byoungchoo; Bae, In-Gon; Huh, Yoon Ho

    2016-01-01

    We herein report on a remarkably simple, fast, and economic way of fabricating homogeneous and well oriented silver nanowires (AgNWs) that exhibit strong in-plane electrical and optical anisotropies. Using a small quantity of AgNW suspension, the horizontal-dip (H-dip) coating method was applied, in which highly oriented AgNWs were deposited unidirectionally along the direction of coating over centimetre-scale lengths very rapidly. In applying the H-dip-coating method, we adjusted the shear strain rate of the capillary flow in the Landau-Levich meniscus of the AgNW suspension, which induced a high degree of uniaxial orientational ordering (0.37–0.43) of the AgNWs, comparable with the ordering seen in archetypal nematic liquid crystal (LC) materials. These AgNWs could be used to fabricate not only transparent electrodes, but also LC-alignment electrodes for LC devices and/or polarising electrodes for organic photovoltaic devices, having the potential to revolutionise the architectures of a number of polarisation-selective opto-electronic devices for use in printed/organic electronics. PMID:26778621

  20. Aligned silver nanowire-based transparent electrodes for engineering polarisation-selective optoelectronics

    NASA Astrophysics Data System (ADS)

    Park, Byoungchoo; Bae, In-Gon; Huh, Yoon Ho

    2016-01-01

    We herein report on a remarkably simple, fast, and economic way of fabricating homogeneous and well oriented silver nanowires (AgNWs) that exhibit strong in-plane electrical and optical anisotropies. Using a small quantity of AgNW suspension, the horizontal-dip (H-dip) coating method was applied, in which highly oriented AgNWs were deposited unidirectionally along the direction of coating over centimetre-scale lengths very rapidly. In applying the H-dip-coating method, we adjusted the shear strain rate of the capillary flow in the Landau-Levich meniscus of the AgNW suspension, which induced a high degree of uniaxial orientational ordering (0.37–0.43) of the AgNWs, comparable with the ordering seen in archetypal nematic liquid crystal (LC) materials. These AgNWs could be used to fabricate not only transparent electrodes, but also LC-alignment electrodes for LC devices and/or polarising electrodes for organic photovoltaic devices, having the potential to revolutionise the architectures of a number of polarisation-selective opto-electronic devices for use in printed/organic electronics.

  1. Hierarchical ZnO Nanowires-loaded Sb-doped SnO2-ZnO Micrograting Pattern via Direct Imprinting-assisted Hydrothermal Growth and Its Selective Detection of Acetone Molecules

    NASA Astrophysics Data System (ADS)

    Choi, Hak-Jong; Choi, Seon-Jin; Choo, Soyoung; Kim, Il-Doo; Lee, Heon

    2016-01-01

    We propose a novel synthetic route by combining imprinting transfer of a Sb-doped SnO2 (ATO)-ZnO composite micrograting pattern (MP), i.e., microstrip lines, on a sensor substrate and subsequent hydrothermal growth of ZnO nanowires (NWs) for producing a hierarchical ZnO NW-loaded ATO-ZnO MP as an improved chemo-resistive sensing layer. Here, ATO-ZnO MP structure with 3-μm line width, 9-μm pitch, and 6-μm height was fabricated by direct transfer of mixed ATO and ZnO nanoparticle (NP)-dispersed resists, which are pre-patterned on a polydimethylsiloxane (PDMS) mold. ZnO NWs with an average diameter of less than 50 nm and a height of 250 nm were quasi-vertically grown on the ATO-ZnO MP, leading to markedly enhanced surface area and heterojunction composites between each ATO NP, ZnO NP, and ZnO NW. A ZnO NW-loaded MP sensor with a relative ratio of 1:9 between ATO and ZnO (1:9 ATO-ZnO), exhibited highly sensitive and selective acetone sensing performance with 2.84-fold higher response (Rair/Rgas = 12.8) compared to that (Rair/Rgas = 4.5) of pristine 1:9 ATO-ZnO MP sensor at 5 ppm. Our results demonstrate the processing advantages of direct imprinting-assisted hydrothermal growth for large-scale homogeneous coating of hierarchical oxide layers, particularly for applications in highly sensitive and selective chemical sensors.

  2. Hierarchical ZnO Nanowires-loaded Sb-doped SnO2-ZnO Micrograting Pattern via Direct Imprinting-assisted Hydrothermal Growth and Its Selective Detection of Acetone Molecules

    PubMed Central

    Choi, Hak-Jong; Choi, Seon-Jin; Choo, Soyoung; Kim, Il-Doo; Lee, Heon

    2016-01-01

    We propose a novel synthetic route by combining imprinting transfer of a Sb-doped SnO2 (ATO)-ZnO composite micrograting pattern (MP), i.e., microstrip lines, on a sensor substrate and subsequent hydrothermal growth of ZnO nanowires (NWs) for producing a hierarchical ZnO NW-loaded ATO-ZnO MP as an improved chemo-resistive sensing layer. Here, ATO-ZnO MP structure with 3-μm line width, 9-μm pitch, and 6-μm height was fabricated by direct transfer of mixed ATO and ZnO nanoparticle (NP)-dispersed resists, which are pre-patterned on a polydimethylsiloxane (PDMS) mold. ZnO NWs with an average diameter of less than 50 nm and a height of 250 nm were quasi-vertically grown on the ATO-ZnO MP, leading to markedly enhanced surface area and heterojunction composites between each ATO NP, ZnO NP, and ZnO NW. A ZnO NW-loaded MP sensor with a relative ratio of 1:9 between ATO and ZnO (1:9 ATO-ZnO), exhibited highly sensitive and selective acetone sensing performance with 2.84-fold higher response (Rair/Rgas = 12.8) compared to that (Rair/Rgas = 4.5) of pristine 1:9 ATO-ZnO MP sensor at 5 ppm. Our results demonstrate the processing advantages of direct imprinting-assisted hydrothermal growth for large-scale homogeneous coating of hierarchical oxide layers, particularly for applications in highly sensitive and selective chemical sensors. PMID:26743814

  3. In situ ZnO nanowire growth to promote the PVDF piezo phase and the ZnO-PVDF hybrid self-rectified nanogenerator as a touch sensor.

    PubMed

    Li, Zetang; Zhang, Xu; Li, Guanghe

    2014-03-28

    A PVDF-ZnO nanowires (NWs) hybrid generator (PZHG) was designed. A simple, cost effective method to produce the PVDF β phase by nano force is introduced. With the ZnO NWs growing, the in situ nano extension force promotes the phase change. A theoretical analysis of the ZnO NWs acting as a self-rectifier of the nano generator is established. The ZnO NWs acted as a self-adjustment diode to control the current output of the PZHG by piezo-electric and semi-conductive effects. Based on the self-controllability of the piezoelectric output, three kinds of finger touching are distinguished by the output performances of the PZHG, which is applicable to an LCD touch pad. PMID:24515250

  4. In situ ZnO nanowire growth to promote the PVDF piezo phase and the ZnO-PVDF hybrid self-rectified nanogenerator as a touch sensor.

    PubMed

    Li, Zetang; Zhang, Xu; Li, Guanghe

    2014-03-28

    A PVDF-ZnO nanowires (NWs) hybrid generator (PZHG) was designed. A simple, cost effective method to produce the PVDF β phase by nano force is introduced. With the ZnO NWs growing, the in situ nano extension force promotes the phase change. A theoretical analysis of the ZnO NWs acting as a self-rectifier of the nano generator is established. The ZnO NWs acted as a self-adjustment diode to control the current output of the PZHG by piezo-electric and semi-conductive effects. Based on the self-controllability of the piezoelectric output, three kinds of finger touching are distinguished by the output performances of the PZHG, which is applicable to an LCD touch pad.

  5. Largely enhanced efficiency in ZnO nanowire/p-polymer hybridized inorganic/organic ultraviolet light-emitting diode by piezo-phototronic effect.

    PubMed

    Yang, Qing; Liu, Ying; Pan, Caofeng; Chen, Jun; Wen, Xiaonan; Wang, Zhong Lin

    2013-02-13

    ZnO nanowire inorganic/organic hybrid ultraviolet (UV) light-emitting diodes (LEDs) have attracted considerable attention as they not only combine the high flexibility of polymers with the structural and chemical stability of inorganic nanostructures but also have a higher light extraction efficiency than thin film structures. However, up to date, the external quantum efficiency of UV LED based on ZnO nanostructures has been limited by a lack of efficient methods to achieve a balance between electron contributed current and hole contributed current that reduces the nonradiative recombination at interface. Here we demonstrate that the piezo-phototronic effect can largely enhance the efficiency of a hybridized inorganic/organic LED made of a ZnO nanowire/p-polymer structure, by trimming the electron current to match the hole current and increasing the localized hole density near the interface through a carrier channel created by piezoelectric polarization charges on the ZnO side. The external efficiency of the hybrid LED was enhanced by at least a factor of 2 after applying a proper strain, reaching 5.92%. This study offers a new concept for increasing organic LED efficiency and has a great potential for a wide variety of high-performance flexible optoelectronic devices.

  6. Catalyst-free growth of ZnO nanowires on ITO seed/glass by thermal evaporation method: Effects of ITO seed layer thickness

    NASA Astrophysics Data System (ADS)

    Alsultany, Forat H.; Hassan, Z.; Ahmed, Naser M.

    2016-07-01

    A seed/catalyst-free growth of ZnO nanowires (ZnO-NWs) on a glass substrate were successfully fabricated using thermal evaporation technique. These nanowires were grown on ITO seed layers of different thicknesses of 25 and 75 nm, which were deposited on glass substrates by radio frequency (RF) magnetron sputtering. Prior to synthesized ITO nanowires, the sputtered ITO seeds were annealed using the continuous wave (CW) CO2 laser at 450 °C in air for 15 min. The effect of seed layer thickness on the morphological, structural, and optical properties of ZnO-NWs were systematically investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and UV-Vis spectrophotometer.

  7. Vertically aligned ZnO nanorod core-polypyrrole conducting polymer sheath and nanotube arrays for electrochemical supercapacitor energy storage

    PubMed Central

    2014-01-01

    Nanocomposite electrodes having three-dimensional (3-D) nanoscale architecture comprising of vertically aligned ZnO nanorod array core-polypyrrole (PPy) conducting polymer sheath and the vertical PPy nanotube arrays have been investigated for supercapacitor energy storage. The electrodes in the ZnO nanorod core-PPy sheath structure are formed by preferential nucleation and deposition of PPy layer over hydrothermally synthesized vertical ZnO nanorod array by controlled pulsed current electropolymerization of pyrrole monomer under surfactant action. The vertical PPy nanotube arrays of different tube diameter are created by selective etching of the ZnO nanorod core in ammonia solution for different periods. Cyclic voltammetry studies show high areal-specific capacitance approximately 240 mF.cm-2 for open pore and approximately 180 mF.cm-2 for narrow 30-to-36-nm diameter PPy nanotube arrays attributed to intensive faradic processes arising from enhanced access of electrolyte ions through nanotube interior and exterior. Impedance spectroscopy studies show that capacitive response extends over larger frequency domain in electrodes with PPy nanotube structure. Simulation of Nyquist plots by electrical equivalent circuit modeling establishes that 3-D nanostructure is better represented by constant phase element which accounts for the inhomogeneous electrochemical redox processes. Charge-discharge studies at different current densities establish that kinetics of the redox process in PPy nanotube electrode is due to the limitation on electron transport rather than the diffusive process of electrolyte ions. The PPy nanotube electrodes show deep discharge capability with high coulomb efficiency and long-term charge-discharge cyclic studies show nondegrading performance of the specific areal capacitance tested for 5,000 cycles. PMID:25246867

  8. Vertically aligned ZnO nanorod core-polypyrrole conducting polymer sheath and nanotube arrays for electrochemical supercapacitor energy storage

    NASA Astrophysics Data System (ADS)

    Sidhu, Navjot Kaur; Rastogi, Alok C.

    2014-08-01

    Nanocomposite electrodes having three-dimensional (3-D) nanoscale architecture comprising of vertically aligned ZnO nanorod array core-polypyrrole (PPy) conducting polymer sheath and the vertical PPy nanotube arrays have been investigated for supercapacitor energy storage. The electrodes in the ZnO nanorod core-PPy sheath structure are formed by preferential nucleation and deposition of PPy layer over hydrothermally synthesized vertical ZnO nanorod array by controlled pulsed current electropolymerization of pyrrole monomer under surfactant action. The vertical PPy nanotube arrays of different tube diameter are created by selective etching of the ZnO nanorod core in ammonia solution for different periods. Cyclic voltammetry studies show high areal-specific capacitance approximately 240 mF.cm-2 for open pore and approximately 180 mF.cm-2 for narrow 30-to-36-nm diameter PPy nanotube arrays attributed to intensive faradic processes arising from enhanced access of electrolyte ions through nanotube interior and exterior. Impedance spectroscopy studies show that capacitive response extends over larger frequency domain in electrodes with PPy nanotube structure. Simulation of Nyquist plots by electrical equivalent circuit modeling establishes that 3-D nanostructure is better represented by constant phase element which accounts for the inhomogeneous electrochemical redox processes. Charge-discharge studies at different current densities establish that kinetics of the redox process in PPy nanotube electrode is due to the limitation on electron transport rather than the diffusive process of electrolyte ions. The PPy nanotube electrodes show deep discharge capability with high coulomb efficiency and long-term charge-discharge cyclic studies show nondegrading performance of the specific areal capacitance tested for 5,000 cycles.

  9. Vertically aligned ZnO nanorod core-polypyrrole conducting polymer sheath and nanotube arrays for electrochemical supercapacitor energy storage.

    PubMed

    Sidhu, Navjot Kaur; Rastogi, Alok C

    2014-01-01

    Nanocomposite electrodes having three-dimensional (3-D) nanoscale architecture comprising of vertically aligned ZnO nanorod array core-polypyrrole (PPy) conducting polymer sheath and the vertical PPy nanotube arrays have been investigated for supercapacitor energy storage. The electrodes in the ZnO nanorod core-PPy sheath structure are formed by preferential nucleation and deposition of PPy layer over hydrothermally synthesized vertical ZnO nanorod array by controlled pulsed current electropolymerization of pyrrole monomer under surfactant action. The vertical PPy nanotube arrays of different tube diameter are created by selective etching of the ZnO nanorod core in ammonia solution for different periods. Cyclic voltammetry studies show high areal-specific capacitance approximately 240 mF.cm(-2) for open pore and approximately 180 mF.cm(-2) for narrow 30-to-36-nm diameter PPy nanotube arrays attributed to intensive faradic processes arising from enhanced access of electrolyte ions through nanotube interior and exterior. Impedance spectroscopy studies show that capacitive response extends over larger frequency domain in electrodes with PPy nanotube structure. Simulation of Nyquist plots by electrical equivalent circuit modeling establishes that 3-D nanostructure is better represented by constant phase element which accounts for the inhomogeneous electrochemical redox processes. Charge-discharge studies at different current densities establish that kinetics of the redox process in PPy nanotube electrode is due to the limitation on electron transport rather than the diffusive process of electrolyte ions. The PPy nanotube electrodes show deep discharge capability with high coulomb efficiency and long-term charge-discharge cyclic studies show nondegrading performance of the specific areal capacitance tested for 5,000 cycles. PMID:25246867

  10. Selective growth of tilted ZnO nanoneedles and nanowires by PLD on patterned sapphire substrates

    NASA Astrophysics Data System (ADS)

    Shkurmanov, Alexander; Sturm, Chris; Lenzner, Jörg; Feuillet, Guy; Tendille, Florian; De Mierry, Philippe; Grundmann, Marius

    2016-09-01

    We report the possibility to control the tilting of nanoneedles and nanowires by using structured sapphire substrates. The advantage of the reported strategy is to obtain well oriented growth along a single direction tilted with respect to the surface normal, whereas the growth in other directions is suppressed. In our particular case, the nanostructures are tilted with respect to the surface normal by an angle of 58 ° . Moreover, we demonstrate that variation of the nanostructures shape from nanoneedles to cylindrical nanowires by using SiO2 layer is observed.

  11. Volumetric Heating of Ultra-High Energy Density Relativistic Plasmas by Ultrafast Laser Irradiation of Aligned Nanowire Arrays

    NASA Astrophysics Data System (ADS)

    Bargsten, Clayton; Hollinger, Reed; Shlyaptsev, Vyacheslav; Pukhov, Alexander; Keiss, David; Townsend, Amanda; Wang, Yong; Wang, Shoujun; Prieto, Amy; Rocca, Jorge

    2014-10-01

    We have demonstrated the volumetric heating of near-solid density plasmas to keV temperatures by ultra-high contrast femtosecond laser irradiation of arrays of vertically aligned nanowires with an average density up to 30% solid density. X-ray spectra show that irradiation of Ni and Au nanowire arrays with laser pulses of relativistic intensities ionizes plasma volumes several micrometers in depth to the He-like and Co-like (Au 52 +) stages respectively. The penetration depth of the heat into the nanowire array was measured monitoring He-like Co lines from irradiated arrays in which the nanowires are composed of a Co segment buried under a selected length of Ni. The measurement shows the ionization reaches He-like Co for depth of up to 5 μm within the target. This volumetric plasma heating approach creates a new laboratory plasma regime in which extreme plasma parameters can be accessed with table-top lasers. Scaling to higher laser intensities promises to create plasmas with temperatures and pressures approaching those in the center of the sun. Work supported by the U.S Department of Energy, Fusion Energy Sciences and the Defense Threat Reduction Agency grant HDTRA-1-10-1-0079. A.P was supported by of DFG-funded project TR18.

  12. Band alignment at SrCu2O2/ZnO heterointerface

    NASA Astrophysics Data System (ADS)

    Konovalov, I.; Hesse, R.

    2009-09-01

    SrCu2O2/ZnO interface is interesting for application in blue and UV light emission devices. Measurements of the valence band offset at SrCu2O2/ZnO interface using photoelectron spectroscopy result in an offset of 2.0 eV (cliff), meaning that the interface band gap is reduced to 1.4 eV. Blue and UV light emission observed previously can be attained in this material system presumably by injection of minority carriers involving tunneling through a narrow barrier at the interface. Additional intensive infrared light emission due to interface recombination can be predicted.

  13. Nitrogen-plasma treatment of parallel-aligned SnO2-nanowire field-effect transistors

    NASA Astrophysics Data System (ADS)

    Choi, Yong-Hee; Na, Junhong; Kim, Jae-Sung; Joo, Min-Kyu; Kim, Gyu Tae; Kang, Pil Soo

    2014-08-01

    Nitrogen (N2)-plasma treatment and polymethylmethacrylate (PMMA) passivation were carried out to stabilize the electrical properties of parallel-aligned tin-dioxide (SnO2)-nanowire field-effect transistors. Treatment led to a positive shift in the threshold voltage, V th , with a reduction in the hysteresis in the transfer curves of more than 30% compared to the case without treatment. Passivation was carried using a PMMA coating to prevent changes in the electrical properties over time. X-ray photoelectron spectroscopy and Auger electron spectroscopy were employed to determine the chemical mechanisms that resulted in the changes in the electrical properties over time, those changes being attributed to the recombination of oxygen vacancies and carbon contaminants on the surface of the SnO2 nanowires with oxygen in the ambient air.

  14. Incommensurate van der Waals epitaxy of nanowire arrays: a case study with ZnO on muscovite mica substrates.

    PubMed

    Utama, Muhammad Iqbal Bakti; Belarre, Francisco J; Magen, Cesar; Peng, Bo; Arbiol, Jordi; Xiong, Qihua

    2012-04-11

    The requirement of lattice matching between a material and its substrate for the growth of defect-free heteroepitaxial crystals can be circumvented with van der Waals epitaxy (vdWE). However, the utilization and characteristics of vdWE in nonlamellar/nonplanar nanoarchitectures are still not very well-documented. Here we establish the characteristics of vdWE in nanoarchitectures using a case study of ZnO nanowire (NW) array on muscovite mica substrate without any buffer/seed layer. With extensive characterizations involving electron microscopy, diffractometry, and the related analyses, we conclude that the NWs grown via vdWE exhibit an incommensurate epitaxy. The incommensurate vdWE allows a nearly complete lattice relaxation at the NW-substrate heterointerface without any defects, thus explaining the unnecessity of lattice matching for well-crystallized epitaxial NWs on muscovite mica. We then determine the polarity of the NW via a direct visualization of Zn-O dumbbells using the annular bright field scanning transmission electron miscroscopy (ABF-STEM) in order to identify which atoms are at the base of the NWs and responsible for the van der Waals interactions. The information from the ABF-STEM is then used to construct the proper atomic arrangement at the heterointerface with a 3D atomic modeling to corroborate the characteristics of the incommensurate vdWE. Our findings suggest that the vdWE might be extended for a wider varieties of compounds and epitaxial nanoarchitectures to serve as a universal epitaxy strategy.

  15. High-performance flexible Ag nanowire electrode with low-temperature atomic-layer-deposition fabrication of conductive-bridging ZnO film.

    PubMed

    Duan, Ya-Hui; Duan, Yu; Chen, Ping; Tao, Ye; Yang, Yong-Qiang; Zhao, Yi

    2015-01-01

    As material for flexible transparent electrodes for organic photoelectric devices, the silver nanowires (AgNWs) have been widely studied. In this work, we propose a hybrid flexible anode with photopolymer substrate, which is composed of spin-coating-processed AgNW meshes and of zinc oxide (ZnO) prepared by low-temperature (60°C) atomic layer deposition. ZnO effectively fills in the voids of the AgNW mesh electrode, which is thus able to contact to the device all over the active area, to allow for efficient charge extraction/injection. Furthermore, ZnO grown by low temperature mainly relies on hole conduction to make the anode play a better role. Hole-only devices are fabricated to certify the functionality of the low-temperature ZnO film. Finally, we confirm that the ZnO film grown at a low temperature bring a significant contribution to the performance of the modified AgNW anode.

  16. Application of Chemical Doping and Architectural Design Principles To Fabricate Nanowire Co2Ni3ZnO8 Arrays for Aqueous Asymmetric Supercapacitors.

    PubMed

    Liu, Qi; Yang, Bin; Liu, Jingyuan; Yuan, Yi; Zhang, Hongsen; Liu, Lianhe; Wang, Jun; Li, Rumin

    2016-08-10

    Electrode materials derived from transition metal oxides have a serious problem of low electron transfer rate, which restricts their practical application. However, chemically doped graphene transforms the chemical bonding configuration to enhance electron transfer rate and, therefore, facilitates the successful fabrication of Co2Ni3ZnO8 nanowire arrays. In addition, the Co2Ni3ZnO8 electrode materials, considered as Ni and Zn ions doped into Co3O4, have a high electron transfer rate and electrochemical response capability, because the doping increases the degree of crystal defect and reaction of Co/Ni ions with the electrolyte. Hence, the Co2Ni3ZnO8 electrode exhibits a high rate property and excellent electrochemical cycle stability, as determined by electrochemical analysis of the relationship between specific capacitance, IR drop, Coulomb efficiency, and different current densities. From the results of a three-electrode system of electrochemical measurement, the Co2Ni3ZnO8 electrode demonstrates a specific capacitance of 1115 F g(-1) and retains 89.9% capacitance after 2000 cycles at a current density of 4 A g(-1). The energy density of the asymmetric supercapacitor (AC//Co2Ni3ZnO8) is 54.04 W h kg(-1) at the power density of 3200 W kg(-1). PMID:27428712

  17. High-performance flexible Ag nanowire electrode with low-temperature atomic-layer-deposition fabrication of conductive-bridging ZnO film

    NASA Astrophysics Data System (ADS)

    Duan, Ya-Hui; Duan, Yu; Chen, Ping; Tao, Ye; Yang, Yong-Qiang; Zhao, Yi

    2015-02-01

    As material for flexible transparent electrodes for organic photoelectric devices, the silver nanowires (AgNWs) have been widely studied. In this work, we propose a hybrid flexible anode with photopolymer substrate, which is composed of spin-coating-processed AgNW meshes and of zinc oxide (ZnO) prepared by low-temperature (60°C) atomic layer deposition. ZnO effectively fills in the voids of the AgNW mesh electrode, which is thus able to contact to the device all over the active area, to allow for efficient charge extraction/injection. Furthermore, ZnO grown by low temperature mainly relies on hole conduction to make the anode play a better role. Hole-only devices are fabricated to certify the functionality of the low-temperature ZnO film. Finally, we confirm that the ZnO film grown at a low temperature bring a significant contribution to the performance of the modified AgNW anode.

  18. Application of Chemical Doping and Architectural Design Principles To Fabricate Nanowire Co2Ni3ZnO8 Arrays for Aqueous Asymmetric Supercapacitors.

    PubMed

    Liu, Qi; Yang, Bin; Liu, Jingyuan; Yuan, Yi; Zhang, Hongsen; Liu, Lianhe; Wang, Jun; Li, Rumin

    2016-08-10

    Electrode materials derived from transition metal oxides have a serious problem of low electron transfer rate, which restricts their practical application. However, chemically doped graphene transforms the chemical bonding configuration to enhance electron transfer rate and, therefore, facilitates the successful fabrication of Co2Ni3ZnO8 nanowire arrays. In addition, the Co2Ni3ZnO8 electrode materials, considered as Ni and Zn ions doped into Co3O4, have a high electron transfer rate and electrochemical response capability, because the doping increases the degree of crystal defect and reaction of Co/Ni ions with the electrolyte. Hence, the Co2Ni3ZnO8 electrode exhibits a high rate property and excellent electrochemical cycle stability, as determined by electrochemical analysis of the relationship between specific capacitance, IR drop, Coulomb efficiency, and different current densities. From the results of a three-electrode system of electrochemical measurement, the Co2Ni3ZnO8 electrode demonstrates a specific capacitance of 1115 F g(-1) and retains 89.9% capacitance after 2000 cycles at a current density of 4 A g(-1). The energy density of the asymmetric supercapacitor (AC//Co2Ni3ZnO8) is 54.04 W h kg(-1) at the power density of 3200 W kg(-1).

  19. EFFECT OF PRE-ANNEALING TEMPERATURE ON THE GROWTH OF ALIGNED α-Fe2O3 NANOWIRES VIA A TWO-STEP THERMAL OXIDATION

    NASA Astrophysics Data System (ADS)

    Rashid, Norhana Mohamed; Kishi, Naoki; Soga, Tetsuo

    2016-03-01

    Pre-annealing as part of a two-step thermal oxidation process has a significant effect on the growth of hematite (α-Fe2O3) nanowires on Fe foil. High-density aligned nanowires were obtained on iron foils pre-annealed at 300∘C under a dry air flow for 30min. The X-ray diffraction (XRD) patterns indicate that the nanowires are transformed from the small α-Fe2O3 grains and uniquely grow in the (110) direction. The formation of a high-density of small grains by pre-annealing improved the alignment and density of the α-Fe2O3 nanowires.

  20. Optical and Electrical Investigation of ZnO Nano-Wire Array to Micro-Flower from Hierarchical Nano-Rose Structures.

    PubMed

    Pal, Kaushik; Zhan, Bihong; Ma, Xiao; Wang, Guoping; Schirhagl, Romana; Murgasen, Priya

    2016-01-01

    We have demonstrated a simple solvo-chemical and solvo-thermal route to design various nano-structures growth of zinc oxide (ZnO). The shapes and morphologies can be easily controlled by using different ambient conditions. We successfully fabricated ZnO nano-wires array on ITO substrate. Those nano-wire array center gradually formed micro-flower like structure evolved in this solvo-chemical route. This novel synthesis happened under cationic surfactant CTAB in the solution helps to form hierarchical structures of ZnO. The length of nano-wire is around 2.0 µm, which formed micro-flower diameter 5.0 µm. Micro-flowers were scratched out from ITO substrate thin film and annealed at 650 °C in electric oven for 1 hour, eventually this micro-flower transformed to novel nano-rose structure confirmed by electron microscopic study. Synthesized nano-rose diameter was around 730 nm. Moreover, we found a drastic change of dielectric behavior and DC conductivity of ZnO nanostructures depending on geometry regulated by the duration of preparation. Interestingly enough, optical and electrical properties also changed due to different crystalline structure formation. The dielectric constant is higher at 7.5 also high threshold voltages at 4 V, corresponds to nano-wires array with micro-flower system. A detail dielectric analysis of one step behavior of broad single relaxation peak was obtained only shows the normal dispersion in this system from 1000 kHz to 10 MHz. While less dielectric constant 1.7 and low threshold voltage 1 V, investigated nano-wires with micro-flower, then nano-rose transition appeared in two step behaviors of double relaxations phenomenon appeared one at low frequency and other at higher frequency region. Besides, I~V response characteristics is new idea about different breakdown voltages and bi-stable DC switching capability. Our work demonstrates the possibility of a fast novel synthesis route using a Solvo-chemical process for this type of nanomaterials

  1. Optical and Electrical Investigation of ZnO Nano-Wire Array to Micro-Flower from Hierarchical Nano-Rose Structures.

    PubMed

    Pal, Kaushik; Zhan, Bihong; Ma, Xiao; Wang, Guoping; Schirhagl, Romana; Murgasen, Priya

    2016-01-01

    We have demonstrated a simple solvo-chemical and solvo-thermal route to design various nano-structures growth of zinc oxide (ZnO). The shapes and morphologies can be easily controlled by using different ambient conditions. We successfully fabricated ZnO nano-wires array on ITO substrate. Those nano-wire array center gradually formed micro-flower like structure evolved in this solvo-chemical route. This novel synthesis happened under cationic surfactant CTAB in the solution helps to form hierarchical structures of ZnO. The length of nano-wire is around 2.0 µm, which formed micro-flower diameter 5.0 µm. Micro-flowers were scratched out from ITO substrate thin film and annealed at 650 °C in electric oven for 1 hour, eventually this micro-flower transformed to novel nano-rose structure confirmed by electron microscopic study. Synthesized nano-rose diameter was around 730 nm. Moreover, we found a drastic change of dielectric behavior and DC conductivity of ZnO nanostructures depending on geometry regulated by the duration of preparation. Interestingly enough, optical and electrical properties also changed due to different crystalline structure formation. The dielectric constant is higher at 7.5 also high threshold voltages at 4 V, corresponds to nano-wires array with micro-flower system. A detail dielectric analysis of one step behavior of broad single relaxation peak was obtained only shows the normal dispersion in this system from 1000 kHz to 10 MHz. While less dielectric constant 1.7 and low threshold voltage 1 V, investigated nano-wires with micro-flower, then nano-rose transition appeared in two step behaviors of double relaxations phenomenon appeared one at low frequency and other at higher frequency region. Besides, I~V response characteristics is new idea about different breakdown voltages and bi-stable DC switching capability. Our work demonstrates the possibility of a fast novel synthesis route using a Solvo-chemical process for this type of nanomaterials

  2. Inorganic Nano Light-Emitting Transistor: p-Type Porous Silicon Nanowire/n-Type ZnO Nanofilm.

    PubMed

    Lee, Sang Hoon; Kim, Jong Woo; Lee, Tae Il; Myoung, Jae Min

    2016-08-01

    An inorganic nano light-emitting transistor (INLET) consisting of p-type porous Si nanowires (PoSiNWs) and an n-type ZnO nanofilm was integrated on a heavily doped p-type Si substrate with a thermally grown SiO2 layer. To verify that modulation of the Fermi level of the PoSiNWs is key for switchable light emitting, I-V and electroluminescent characteristics of the INLET are investigated as a function of gate bias (V g ). As the V g is changed from 0 V to -20 V, the current level and light-emission intensity in the orange-red range increase by three and two times, respectively, with a forward bias of 20 V in the p-n junction, compared to those at a V g of 0 V. On the other hand, as the V g approaches 10 V, the current level decreases and the emission intensity is reduced and then finally switched off. This result arises from the modulation of the Fermi level of the PoSiNWs and the built-in potential at the p-n junction by the applied gate electric field. PMID:27378257

  3. 3D branched ZnO nanowire arrays decorated with plasmonic au nanoparticles for high-performance photoelectrochemical water splitting.

    PubMed

    Zhang, Xing; Liu, Yang; Kang, Zhenhui

    2014-03-26

    Plasmonic photoelectrochemical (PEC) water splitting is very promising in the conversion of abundant solar energy into chemical energy. However, the solar-to-hydrogen efficiencies reported so far are still too low for practical use, which can be improved by optimizing the design and synthesis of individual blocks (i. e., the compositions, sizes, shapes of the metal and the coupling semiconductors) and the assembly of these blocks into targeted three-dimensional (3D) structures. Here, we constructed a composite plasmonic metal/semiconductor photoanode by decorating gold nanoparticles (Au NPs) on 3D branched ZnO nanowire arrays (B-ZnO NWs) through a series of simple solution chemical routes. The 3D ordered Au/B-ZnO NWs photoanodes exhibited excellent PEC activities in both ultraviolet and visible region. The improved photoactivities in visible region were demonstrated to be caused by the surface-plasmon-resonance effect of Au NPs. The photoconversion efficiency of Au/B-ZnO NWs photoanode reached 0.52% under simulated sunlight illumination. This is a high value of solar-to-hydrogen efficiencies reported till nowadays for plasmonic PEC water splitting, which was mainly benefit from the extensive metal/semiconductor interfaces for efficient extraction of hot electron from Au NPs and excellent charge-carries collection efficiency of the 3D ordered Au/B-ZnO NWs photoelectrode. PMID:24598779

  4. Inorganic Nano Light-Emitting Transistor: p-Type Porous Silicon Nanowire/n-Type ZnO Nanofilm.

    PubMed

    Lee, Sang Hoon; Kim, Jong Woo; Lee, Tae Il; Myoung, Jae Min

    2016-08-01

    An inorganic nano light-emitting transistor (INLET) consisting of p-type porous Si nanowires (PoSiNWs) and an n-type ZnO nanofilm was integrated on a heavily doped p-type Si substrate with a thermally grown SiO2 layer. To verify that modulation of the Fermi level of the PoSiNWs is key for switchable light emitting, I-V and electroluminescent characteristics of the INLET are investigated as a function of gate bias (V g ). As the V g is changed from 0 V to -20 V, the current level and light-emission intensity in the orange-red range increase by three and two times, respectively, with a forward bias of 20 V in the p-n junction, compared to those at a V g of 0 V. On the other hand, as the V g approaches 10 V, the current level decreases and the emission intensity is reduced and then finally switched off. This result arises from the modulation of the Fermi level of the PoSiNWs and the built-in potential at the p-n junction by the applied gate electric field.

  5. ZnO nanowire-based light-emitting diodes with tunable emission from near-UV to blue

    NASA Astrophysics Data System (ADS)

    Pauporté, Thierry; Lupan, Oleg; Viana, Bruno; le Bahers, T.

    2013-03-01

    Nanowires (NWs)-based light emitting diodes (LEDs) have drawn large interest due to many advantages compared to thin film based devices. We have successfully prepared epitaxial n-ZnO(NW)/p-GaN heterojunctions using low temperature soft electrochemical techniques. The structures have been used in LED devices and exhibited highly interesting performances. Moreover, the bandgap of ZnO has been tuned by Cu or Cd doping at controlled atomic concentration. A result was the controlled shift of the LED emission in the visible spectral wavelength region. Using DFT computing calculations, we have also shown that the bandgap narrowing has two different origins for Zn1-xCdxO (ZnO:Cd) and ZnO:Cu. In the first case, it is due to the crystal lattice expansion, whereas in the second case Cu-3d donor and Cu-3d combined to O-2p acceptor bands appear in the bandgap which broadnesses increase with the dopant concentration. This leads to the bandgap reduction.

  6. Polycrystalline nanowires of gadolinium-doped ceria via random alignment mediated by supercritical carbon dioxide

    PubMed Central

    Kim, Sang Woo; Ahn, Jae-Pyoung

    2013-01-01

    This study proposes a seed/template-free method that affords high-purity semiconducting nanowires from nanoclusters, which act as basic building blocks for nanomaterials, under supercritical CO2 fluid. Polycrystalline nanowires of Gd-doped ceria (Gd-CeO2) were formed by CO2-mediated non-oriented attachment of the nanoclusters resulting from the dissociation of single-crystalline aggregates. The unique formation mechanism underlying this morphological transition may be exploited for the facile growth of high-purity polycrystalline nanowires. PMID:23572061

  7. Temperature dependent electrical transport studies of self-aligned ZnO nanorods/Si heterostructures deposited by sputtering

    SciTech Connect

    Ranwa, Sapana; Dixit, Vivek; Kumar, Mahesh; Kumar Kulriya, Pawan

    2014-06-21

    Self-aligned ZnO nanorods (NRs) were grown on n-Si(100) substrate by RF sputtering techniques. The NRs are uniformly grown on 2-inch wafer along [0001] direction. Single-crystalline wurtzite structure of ZnO NRs was confirmed by X-ray diffraction. The average diameter, height, and density of NRs are found 48 nm, 750 nm, and 1.26 × 10{sup 10} cm{sup −2}, respectively. The current-voltages (I-V) characteristics of ZnO NRs/Si heterojunction (HJ) were studied in the temperature range of 120–300 K and it shows a rectifying behavior. Barrier height (ϕ{sub B}) and ideality factor (η) were estimated from thermionic emission model and found to be highly temperature dependent in nature. Richardson constant (A{sup *}) was evaluated using Richardson plot of ln(I{sub o}/T{sup 2}) versus q/kT plot by linear fitting in two temperature range 120–180 K and 210–300 K. Large deviation in Richardson constant from its theoretical value of n-Si indicates the presence of barrier inhomogeneities at HJ. Double Gaussian distribution of barrier height with thermionic equation gives mean barrier heights of 0.55 ± 0.01 eV and 0.86 ± 0.02 eV for two different temperature regions 120–180 K and 210–300 K, respectively. Modified Richardson plot provided two values of Richardson constant for two temperature regions. However, for higher temperature range (210–300 K), the calculated value of Richardson constant ∼123 A cm{sup −2} K{sup −2} was close to the ideal Richardson constant for n-Si.

  8. SERS detection and antibacterial activity from uniform incorporation of Ag nanoparticles with aligned Si nanowires

    NASA Astrophysics Data System (ADS)

    Chen, Chia-Yun; Hsu, Li-Jen; Hsiao, Po-Hsuan; Yu, Chang-Tze Ricky

    2015-11-01

    We present a facile, reliable and controllable two-steps electroless deposition for uniformly decorating the silver (Ag) nanoparticles (NPs) on the highly aspect ratio of silicon (Si) nanowire arrays. Different from the direct Ag-loading process, which is normally challenged by the non-uniform coating of Ag, the formation of Ag NPs using such innovative electroless process is no longer to be limited at top nanowire surfaces solely; instead, each Ag+/Si interface can initiate the galvanic reduction of Ag+ ions, thus resulting in the uniform formation of Ag NPs on the entire Si nanowire arrays. In addition, systematic explorations of surface-enhanced Raman scattering (SERS) capability as well as antibacterial activity of the Ag/Si-incorporated nanostructures were performed, and the optimized Ag loadings on Si nanowire-based substrates along with the kinetic investigations were further revealed, which may benefit their practical applications in sensing, medical and biological needs.

  9. Oxide mediated liquid-solid growth of high aspect ratio aligned gold silicide nanowires on Si(110) substrates

    NASA Astrophysics Data System (ADS)

    Bhatta, Umananda M.; Rath, Ashutosh; Dash, Jatis K.; Ghatak, Jay; Yi-Feng, Lai; Liu, Chuan-Pu; Satyam, P. V.

    2009-11-01

    Silicon nanowires grown using the vapor-liquid-solid method are promising candidates for nanoelectronics applications. The nanowires grow from an Au-Si catalyst during silicon chemical vapor deposition. In this paper, the effect of temperature, oxide at the interface and substrate orientation on the nucleation and growth kinetics during formation of nanogold silicide structures is explained using an oxide mediated liquid-solid growth mechanism. Using real time in situ high temperature transmission electron microscopy (with 40 ms time resolution), we show the formation of high aspect ratio (≈15.0) aligned gold silicide nanorods in the presence of native oxide at the interface during in situ annealing of gold thin films on Si(110) substrates. Steps observed in the growth rate and real time electron diffraction show the existence of liquid Au-Si nano-alloy structures on the surface besides the un-reacted gold nanostructures. These results might enable us to engineer the growth of nanowires and similar structures with an Au-Si alloy as a catalyst.

  10. Oxide mediated liquid-solid growth of high aspect ratio aligned gold silicide nanowires on Si(110) substrates.

    PubMed

    Bhatta, Umananda M; Rath, Ashutosh; Dash, Jatis K; Ghatak, Jay; Yi-Feng, Lai; Liu, Chuan-Pu; Satyam, P V

    2009-11-18

    Silicon nanowires grown using the vapor-liquid-solid method are promising candidates for nanoelectronics applications. The nanowires grow from an Au-Si catalyst during silicon chemical vapor deposition. In this paper, the effect of temperature, oxide at the interface and substrate orientation on the nucleation and growth kinetics during formation of nanogold silicide structures is explained using an oxide mediated liquid-solid growth mechanism. Using real time in situ high temperature transmission electron microscopy (with 40 ms time resolution), we show the formation of high aspect ratio ( approximately 15.0) aligned gold silicide nanorods in the presence of native oxide at the interface during in situ annealing of gold thin films on Si(110) substrates. Steps observed in the growth rate and real time electron diffraction show the existence of liquid Au-Si nano-alloy structures on the surface besides the un-reacted gold nanostructures. These results might enable us to engineer the growth of nanowires and similar structures with an Au-Si alloy as a catalyst. PMID:19843987

  11. Modulation of stimulated emission of ZnO nanowire based on electromechanical vibration.

    PubMed

    Li, Lijie

    2016-07-01

    An optical modulator is proposed using a double-clamped nanoelectromechanical resonator. Electromechanical-optical analysis has been performed to validate the idea. The electromechanical simulation involves the nonlocal effect as the resonator is in nanometer scale. Stimulated emission theory has been used to model the luminescence of the nanowire due to the addition of piezoelectric charges subjected to mechanical strains. Results successfully demonstrate both the intensity modulation and frequency filtering, providing an integrated solution in applications such as quantum entanglement experiments. PMID:27409201

  12. Orientation, alignment, and polytype control in epitaxial growth of SiC nanowires for electronics application in harsh environments

    NASA Astrophysics Data System (ADS)

    Koshka, Yaroslav; Thirumalai, Rooban Venkatesh K. G.; Krishnan, Bharat K.; Levin, Igor; Merrett, J. Neil; Davydov, Albert V.

    2013-09-01

    SiC nanowires (NWs) are attractive building blocks for the next generation electronic devices since silicon carbide is a wide bandgap semiconductor with high electrical breakdown strength, radiation resistance, mechanical strength, thermal conductivity, chemical stability and biocompatibility. Epitaxial growth using metal-catalyst-based vapor-liquid-solid mechanism was employed for SiC NW growth in this work. 4H-SiC substrates having different crystallographic orientations were used in order to control NW alignment and polytype. A new technique based on vapor-phase delivery of the metal catalyst was developed to facilitate control of the NW density. Both 4H and 3C polytypes with a strong stacking disorder were obtained. The 4H and 3C NWs had different orientations with respect to the substrate. 4H NWs grew perpendicular to the c-plane of the substrate. The stacking faults (SFs) in these nanowires were perpendicular to the [0001] nanowire axes. All 3C NWs grew at 20° with respect to the substrate c-plane, and their projections on the c-plane corresponded to one of the six equivalent ⟨101-0⟩ crystallographic directions. All six orientations were obtained simultaneously when growing NWs on the (0001) substrate surface, while only one or two NW orientations were observed when growing NWs on any particular crystallographic plane parallel to the c-axis of the substrate. Growth on {101-0} surfaces resulted in only one NW orientation, thereby producing well-aligned NW arrays. Preliminary measurements of the NW electrical conductivity are reported utilizing two-terminal device geometry.

  13. High performance non-volatile ferroelectric copolymer memory based on a ZnO nanowire transistor fabricated on a transparent substrate

    SciTech Connect

    Nedic, Stanko; Welland, Mark E-mail: mew10@cam.ac.uk; Tea Chun, Young; Chu, Daping E-mail: mew10@cam.ac.uk; Hong, Woong-Ki

    2014-01-20

    A high performance ferroelectric non-volatile memory device based on a top-gate ZnO nanowire (NW) transistor fabricated on a glass substrate is demonstrated. The ZnO NW channel was spin-coated with a poly (vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE)) layer acting as a top-gate dielectric without buffer layer. Electrical conductance modulation and memory hysteresis are achieved by a gate electric field induced reversible electrical polarization switching of the P(VDF-TrFE) thin film. Furthermore, the fabricated device exhibits a memory window of ∼16.5 V, a high drain current on/off ratio of ∼10{sup 5}, a gate leakage current below ∼300 pA, and excellent retention characteristics for over 10{sup 4} s.

  14. Structural and optical properties of dense vertically aligned ZnO nanorods grown onto silver and gold thin films by galvanic effect with iron contamination

    SciTech Connect

    Scarpellini, D.; Paoloni, S.; Medaglia, P.G.; Pizzoferrato, R.; Orsini, A.; Falconi, C.

    2015-05-15

    Highlights: • ZnO nanorods were grown on Au and Ag films in aqueous solution by galvanic effect. • The method is prone to metal contamination which can influence the ZnO properties. • Iron doping improves the lattice matching between ZnO and the substrate. • Energy levels of point defects are lowered and the light emission is red-shifted. • Galvanic-induced nucleation starts and proceeds continuously during the growth. - Abstract: Dense arrays of vertically aligned ZnO nanorods have been grown onto either silver or gold seedless substrates trough a simple hydrothermal method by exploiting the galvanic effect between the substrate and metallic parts. The nanorods exhibit larger bases and more defined hexagonal shapes, in comparison with standard non-galvanic wet-chemistry synthesis. X-ray diffraction (XRD) shows that the iron contamination, associated with the galvanic contact, significantly improves the in-plane compatibility of ZnO with the Au and Ag cubic lattice. Photoluminescence (PL) measurements indicate that the contamination does not affect the number density of localized defects, but lowers their energy levels uniformly; differently, the band-edge emission is not altered appreciably. Finally, we have found that the ZnO hetero-nucleation by galvanic effect initiates at different times in different sites of the substrate area. Our results can be useful for the fabrication of high performance piezonanodevices comprising high-density metal-to-ZnO nanoscaled junctions without intermediate polycrystalline layers.

  15. Effect of Nb-doped TiO2 on nanocomposited aligned ZnO nanorod/TiO2:Nb for dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Saurdi, I.; Shafura, A. K.; Azhar, N. E. A.; Ishak, A.; Malek, M. F.; Alrokayan, A. H. Salman; Khan, Haseeb A.; Mamat, M. H.; Rusop, M.

    2016-07-01

    The Nb-doped TiO2 films were deposited on glass substrate at different Nb concentrations of 0 at.%, 1 at.%, 3 at.%, 5 at.% and 7 at.%, respectively and their electrical and structural properties were investigated. Subsequently, the Nb-doped TiO2 films were deposited on top of aligned ZnO Nanorod on ITO glass substrates using spin coating technique. The nanocomposited aligned ZnO nanorod/Nb-doped TiO2 (TiO2:Nb) were coated with different Nb concentrations of 0 at.%, 1 at.%, 3 at.%, 5 at.% and 7 at.%, respectively. The Dye-sensitized solar cells were fabricated from the nanocomposited aligned ZnO nanorod/TiO2:Nb photoanodes and their effects on the performance of the DSSCs were investigated. From the solar simulator measurement of DSSC the solar energy conversion efficiency (η) of 5.376% under AM 1.5 was obtained for the ZnO nanorod/TiO2:Nb-5at.%.

  16. Biomolecule-adsorption-dependent piezoelectric output of ZnO nanowire nanogenerator and its application as self-powered active biosensor.

    PubMed

    Zhao, Yayu; Deng, Ping; Nie, Yuxin; Wang, Penglei; Zhang, Yan; Xing, Lili; Xue, Xinyu

    2014-07-15

    Self-powered active biosensor has been realized from ZnO nanowire (NW) nanogenerator (NG). The piezoelectric output generated by ZnO NW NG can act not only as a power source for driving the device, but also as a biosensing signal. After immersing in 10(-3) g ml(-1) human immunoglobulin G (IgG), the piezoelectric output voltage of the device under compressive deformation decreases from 0.203±0.0176 V (without IgG) to 0.038±0.0035 V. Such a self-powered biosensor has higher response than transistor-type biosensor (I-V behavior). The response of self-powered biosensor is in a linear relationship with IgG concentration (logarithm, 10(-7)-10(-3) g ml(-1)) and the limit of detection (LOD) on IgG of the device is about 6.9 ng ml(-1). The adsorption of biomolecules on the surface of ZnO NWs can modify the free-carrier density, which vary the screening effect of free-carriers on the piezoelectric output. The present results demonstrate a feasible approach for actively detecting biomolecules by coupling the piezotronic and biosensing characteristics of ZnO NWs.

  17. A Heterojunction Design of Single Layer Hole Tunneling ZnO Passivation Wrapping around TiO2Nanowires for Superior Photocatalytic Performance.

    PubMed

    Ghobadi, Amir; Ulusoy, T Gamze; Garifullin, Ruslan; Guler, Mustafa O; Okyay, Ali K

    2016-01-01

    Nanostructured hybrid heterojunctions have been studied widely for photocatalytic applications due to their superior optical and structural properties. In this work, the impact of angstrom thick atomic layer deposited (ALD) ZnO shell layer on photocatalytic activity (PCA) of hydrothermal grown single crystalline TiO2 nanowires (NWs) is systematically explored. We showed that a single cycle of ALD ZnO layer wrapped around TiO2 NWs, considerably boosts the PCA of the heterostructure. Subsequent cycles, however, gradually hinder the photocatalytic activity (PCA) of the TiO2 NWs. Various structural, optical, and transient characterizations are employed to scrutinize this unprecedented change. We show that a single atomic layer of ZnO shell not only increases light harvesting capability of the heterostructure via extension of the absorption toward visible wavelengths, but also mitigates recombination probability of carriers through reduction of surface defects density and introduction of proper charge separation along the core-shell interface. Furthermore, the ultrathin ZnO shell layer allows a strong contribution of the core (TiO2) valence band holes through tunneling across the ultrathin interface. All mechanisms responsible for this enhanced PCA of heterostructure are elucidated and corresponding models are proposed. PMID:27464476

  18. A Heterojunction Design of Single Layer Hole Tunneling ZnO Passivation Wrapping around TiO2Nanowires for Superior Photocatalytic Performance

    NASA Astrophysics Data System (ADS)

    Ghobadi, Amir; Ulusoy, T. Gamze; Garifullin, Ruslan; Guler, Mustafa O.; Okyay, Ali K.

    2016-07-01

    Nanostructured hybrid heterojunctions have been studied widely for photocatalytic applications due to their superior optical and structural properties. In this work, the impact of angstrom thick atomic layer deposited (ALD) ZnO shell layer on photocatalytic activity (PCA) of hydrothermal grown single crystalline TiO2 nanowires (NWs) is systematically explored. We showed that a single cycle of ALD ZnO layer wrapped around TiO2 NWs, considerably boosts the PCA of the heterostructure. Subsequent cycles, however, gradually hinder the photocatalytic activity (PCA) of the TiO2 NWs. Various structural, optical, and transient characterizations are employed to scrutinize this unprecedented change. We show that a single atomic layer of ZnO shell not only increases light harvesting capability of the heterostructure via extension of the absorption toward visible wavelengths, but also mitigates recombination probability of carriers through reduction of surface defects density and introduction of proper charge separation along the core-shell interface. Furthermore, the ultrathin ZnO shell layer allows a strong contribution of the core (TiO2) valence band holes through tunneling across the ultrathin interface. All mechanisms responsible for this enhanced PCA of heterostructure are elucidated and corresponding models are proposed.

  19. A Heterojunction Design of Single Layer Hole Tunneling ZnO Passivation Wrapping around TiO2Nanowires for Superior Photocatalytic Performance

    PubMed Central

    Ghobadi, Amir; Ulusoy, T. Gamze; Garifullin, Ruslan; Guler, Mustafa O.; Okyay, Ali K.

    2016-01-01

    Nanostructured hybrid heterojunctions have been studied widely for photocatalytic applications due to their superior optical and structural properties. In this work, the impact of angstrom thick atomic layer deposited (ALD) ZnO shell layer on photocatalytic activity (PCA) of hydrothermal grown single crystalline TiO2 nanowires (NWs) is systematically explored. We showed that a single cycle of ALD ZnO layer wrapped around TiO2 NWs, considerably boosts the PCA of the heterostructure. Subsequent cycles, however, gradually hinder the photocatalytic activity (PCA) of the TiO2 NWs. Various structural, optical, and transient characterizations are employed to scrutinize this unprecedented change. We show that a single atomic layer of ZnO shell not only increases light harvesting capability of the heterostructure via extension of the absorption toward visible wavelengths, but also mitigates recombination probability of carriers through reduction of surface defects density and introduction of proper charge separation along the core-shell interface. Furthermore, the ultrathin ZnO shell layer allows a strong contribution of the core (TiO2) valence band holes through tunneling across the ultrathin interface. All mechanisms responsible for this enhanced PCA of heterostructure are elucidated and corresponding models are proposed. PMID:27464476

  20. An excellent enzymatic lactic acid biosensor with ZnO nanowires-gated AlGaAs/GaAs high electron mobility transistor.

    PubMed

    Ma, Siwei; Liao, Qingliang; Liu, Hanshuo; Song, Yu; Li, Ping; Huang, Yunhua; Zhang, Yue

    2012-10-21

    An excellent biosensor with ZnO nanowires-gated AlGaAs/GaAs high electron mobility transistor (HEMT) was used to detect lactic acid. Due to the new structure, addition of the Si-doped GaAs cap layer, the HEMT biosensor could detect a wide range of lactic acid concentrations from 0.03 nM to 300 mM. The novel biosensor exhibiting good performance along with fast response, high sensitivity, wide detection range, and long-term stability, can be integrated with a commercially available transmitter to realize lactic acid detection. PMID:22951602

  1. An excellent enzymatic lactic acid biosensor with ZnO nanowires-gated AlGaAs/GaAs high electron mobility transistor

    NASA Astrophysics Data System (ADS)

    Ma, Siwei; Liao, Qingliang; Liu, Hanshuo; Song, Yu; Li, Ping; Huang, Yunhua; Zhang, Yue

    2012-09-01

    An excellent biosensor with ZnO nanowires-gated AlGaAs/GaAs high electron mobility transistor (HEMT) was used to detect lactic acid. Due to the new structure, addition of the Si-doped GaAs cap layer, the HEMT biosensor could detect a wide range of lactic acid concentrations from 0.03 nM to 300 mM. The novel biosensor exhibiting good performance along with fast response, high sensitivity, wide detection range, and long-term stability, can be integrated with a commercially available transmitter to realize lactic acid detection.

  2. ZnO nanowires with Au contacts characterised in the as-grown real device configuration using a local multi-probe method

    NASA Astrophysics Data System (ADS)

    Lord, Alex M.; Walton, Alex S.; Maffeis, Thierry G.; Ward, Michael B.; Davies, Peter; Wilks, Steve P.

    2014-10-01

    We demonstrate here a method using a multi-probe UHV instrument to isolate and measure individual metal contacts controllably fabricated on the tips of free standing ZnO nanowires (NWs). The measurements show Au can form reliable Ohmic and rectifying contacts by exercising control over the surface properties. In the as-grown state the Au contacts display low-resistance characteristics which are determined by the adsorbed species and defects on the NW surface. Subjecting the NWs to an oxidising agent (H2O2) increases the surface potential barrier creating more rectifying contacts. These developments are crucial for controllable NW array devices.

  3. Field emission of vertically aligned V{sub 2}O{sub 5} nanowires on an ITO surface prepared with gaseous transport

    SciTech Connect

    Wu Mingcheng; Lee, C.-S.

    2009-08-15

    Growing V{sub 2}O{sub 5} nanowires (NWs) on a conducting glass substrate combines gaseous transport and pyrolytic deposition of vanadium polyoxometalate anions, and yields vertically aligned vanadium-oxide nanowires. Scanning electron and transmission electron microscopy, selected-area electron diffraction, Raman spectra and powder X-ray analyses indicate that V{sub 2}O{sub 5} nanowires as synthesized were single-crystalline and grew anisotropically among direction [010]. NH{sub 2}OH.HCl served not only as a reducing agent to produce vanadium polyoxometalate clusters but also as a source of NH{sub 3} gas to facilitate the vapor pyrolysis and deposition. The optical properties of V{sub 2}O{sub 5} nanowires exhibit a character dependent on structure. Field emission (FE) measurements show a small turn-on field voltage approx8.3 V/{mu}m, maximum current density 1.8 mA/cm{sup 2}, and a linear Fowler-Nordheim behavior. - Graphical abstract: Growing V{sub 2}O{sub 5} nanowires on a conducting glass substrate combines gaseous transport and pyrolytic deposition of vanadium polyoxometalate anions, and yields vertically aligned vanadium-oxide nanowires.

  4. Fabrication of Ag nanowire and Al-doped ZnO hybrid transparent electrodes

    NASA Astrophysics Data System (ADS)

    You, Sslimsearom; Park, Yong Seo; Choi, Hyung Wook; Kim, Kyung Hwan

    2016-01-01

    Among the materials used as transparent electrodes, silver nanowires (AgNWs) have attracted attention because of their high transmittance and excellent conductivity. However, AgNWs have shortcomings, including their poor adhesion, oxidation by atmospheric oxygen, and unstable characteristics at high temperature. To overcome these shortcomings, multi-layer thin films with an aluminum-doped zinc oxide (AZO)/AgNW/AZO structure were fabricated using facing targets sputtering. The samples heated to 350 °C exhibited stable electrical characteristics. In addition, the adhesion to the substrate was improved compared with AgNWs layer. The AZO/AgNW/AZO thin films with multilayer structure overcame the shortcomings of AgNWs, and we propose their use as transparent electrodes with excellent properties for optoelectronic applications.

  5. Facile construction of vertically aligned ZnO nanorod/PEDOT:PSS hybrid heterojunction-based ultraviolet light sensors: efficient performance and mechanism

    NASA Astrophysics Data System (ADS)

    Ranjith, K. S.; Rajendra Kumar, R. T.

    2016-03-01

    We demonstrate a simple, planar manufacturing process-compatible fabrication of highly efficient UV sensors based on a hybrid heterojunction of an array of vertically aligned ZnO nanorods (NRs) and PEDOT:PSS. The ZnO NR array was grown by the solution growth process and the aspect ratio (length 1 to 4 μm, diameter ˜80 nm) of the rods was controlled by varying the growth time. UV sensors based on (i) naked ZnO NRs and (ii) ZnO NR/PEDOT:PSS heterojunctions were fabricated and tested. The UV sensitivity of bare ZnO NRs was found to increase with increasing aspect ratio of the NRs due to the increase in the photogenerated charge carriers as the fraction of material interacting with the light increases. Under 5 V bias, naked ZnO NR arrays showed a photocurrent of 8.84 × 10-5 A, a responsivity of 0.538 A W-1 and a sensitivity of 4.80 under UV (λ = 256 nm, 130 μW) illumination. ZnO NR/PEDOT:PSS hybrid heterojunctions showed diode-like behavior with a leakage current less than 2.54 × 10-8 A at -5 V and forward turn-on voltage of 1.1 V. ZnO NR/polymer-based hybrid heterojunctions show a photocurrent of 6.74 × 10-4 A, responsivity of 5.046 A W-1 and excellent sensitivity of 37.65 under UV (λ = 256 nm, 130 μW) illumination. Compared with bare ZnO NR arrays, the ZnO NR/polymer heterojunction device shows responsivity enhanced by a factor of 10, sensitivity enhanced by a factor of 8 and faster rise and decay time. The enhanced performance may be due to effective charge separation guided by the built-in potential formed at the interface between ZnO NRs and PEDOT:PSS.

  6. Spatial distribution of neutral oxygen vacancies on ZnO nanowire surfaces: An investigation combining confocal microscopy and first principles calculations

    NASA Astrophysics Data System (ADS)

    Mun Wong, Kin; Alay-e-Abbas, S. M.; Fang, Yaoguo; Shaukat, A.; Lei, Yong

    2013-07-01

    A qualitative approach using room-temperature confocal microscopy is employed to investigate the spatial distribution of shallow and deep oxygen vacancy (VO) concentrations on the polar (0001) and non-polar (101¯0) surfaces of zinc oxide (ZnO) nanowires (NWs). Using the spectral intensity variation of the confocal photoluminescence of the green emission at different spatial locations on the surface, the VO concentrations of an individual ZnO NW can be obtained. The green emission at different spatial locations on the ZnO NW polar (0001) and non-polar (101¯0) surfaces is found to have maximum intensity near the NW edges, decreasing to a minimum near the NW center. First-principles calculations using simple supercell-slab (SS) models are employed to approximate/model the defects on the ZnO NW (101¯0) and (0001) surfaces. These calculations give increased insight into the physical mechanism behind the green emission spectral intensity and the characteristics of an individual ZnO NW. The highly accurate density functional theory (DFT)-based full-potential linearized augmented plane-wave plus local orbitals (FP-LAPW + lo) method is used to compute the defect formation energy (DFE) of the SSs. Previously, using these SS models, it was demonstrated through the FP-LAPW + lo method that in the presence of oxygen vacancies at the (0001) surface, the phase transformation of the SSs in the graphite-like structure to the wurtzite lattice structure will occur even if the thickness of the graphite-like SSs are equal to or less than 4 atomic graphite-like layers [Wong et al., J. Appl. Phys. 113, 014304 (2013)]. The spatial profile of the neutral VO DFEs from the DFT calculations along the ZnO [0001] and [101¯0] directions is found to reasonably explain the spatial profile of the measured confocal luminescence intensity on these surfaces, leading to the conclusion that the green emission spectra of the NWs likely originate from neutral oxygen vacancies. Another significant

  7. Ultrahigh density array of vertically aligned small-molecular organic nanowires on arbitrary substrates.

    PubMed

    Starko-Bowes, Ryan; Pramanik, Sandipan

    2013-01-01

    In recent years π-conjugated organic semiconductors have emerged as the active material in a number of diverse applications including large-area, low-cost displays, photovoltaics, printable and flexible electronics and organic spin valves. Organics allow (a) low-cost, low-temperature processing and (b) molecular-level design of electronic, optical and spin transport characteristics. Such features are not readily available for mainstream inorganic semiconductors, which have enabled organics to carve a niche in the silicon-dominated electronics market. The first generation of organic-based devices has focused on thin film geometries, grown by physical vapor deposition or solution processing. However, it has been realized that organic nanostructures can be used to enhance performance of above-mentioned applications and significant effort has been invested in exploring methods for organic nanostructure fabrication. A particularly interesting class of organic nanostructures is the one in which vertically oriented organic nanowires, nanorods or nanotubes are organized in a well-regimented, high-density array. Such structures are highly versatile and are ideal morphological architectures for various applications such as chemical sensors, split-dipole nanoantennas, photovoltaic devices with radially heterostructured "core-shell" nanowires, and memory devices with a cross-point geometry. Such architecture is generally realized by a template-directed approach. In the past this method has been used to grow metal and inorganic semiconductor nanowire arrays. More recently π-conjugated polymer nanowires have been grown within nanoporous templates. However, these approaches have had limited success in growing nanowires of technologically important π-conjugated small molecular weight organics, such as tris-8-hydroxyquinoline aluminum (Alq3), rubrene and methanofullerenes, which are commonly used in diverse areas including organic displays, photovoltaics, thin film transistors

  8. Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates

    PubMed Central

    Starko-Bowes, Ryan; Pramanik, Sandipan

    2013-01-01

    In recent years π-conjugated organic semiconductors have emerged as the active material in a number of diverse applications including large-area, low-cost displays, photovoltaics, printable and flexible electronics and organic spin valves. Organics allow (a) low-cost, low-temperature processing and (b) molecular-level design of electronic, optical and spin transport characteristics. Such features are not readily available for mainstream inorganic semiconductors, which have enabled organics to carve a niche in the silicon-dominated electronics market. The first generation of organic-based devices has focused on thin film geometries, grown by physical vapor deposition or solution processing. However, it has been realized that organic nanostructures can be used to enhance performance of above-mentioned applications and significant effort has been invested in exploring methods for organic nanostructure fabrication. A particularly interesting class of organic nanostructures is the one in which vertically oriented organic nanowires, nanorods or nanotubes are organized in a well-regimented, high-density array. Such structures are highly versatile and are ideal morphological architectures for various applications such as chemical sensors, split-dipole nanoantennas, photovoltaic devices with radially heterostructured "core-shell" nanowires, and memory devices with a cross-point geometry. Such architecture is generally realized by a template-directed approach. In the past this method has been used to grow metal and inorganic semiconductor nanowire arrays. More recently π-conjugated polymer nanowires have been grown within nanoporous templates. However, these approaches have had limited success in growing nanowires of technologically important π-conjugated small molecular weight organics, such as tris-8-hydroxyquinoline aluminum (Alq3), rubrene and methanofullerenes, which are commonly used in diverse areas including organic displays, photovoltaics, thin film transistors

  9. Photoluminescence enhancement of ZnO nanowire arrays by atomic layer deposition of ZrO2 layers and thermal annealing.

    PubMed

    Zhang, Yuan; Lu, Hong-Liang; Wang, Tao; Ren, Qing-Hua; Chen, Hong-Yan; Zhang, Hao; Ji, Xin-Ming; Liu, Wen-Jun; Ding, Shi-Jin; Zhang, David Wei

    2016-06-28

    The effects of shell thickness and rapid thermal annealing on photoluminescence properties of one-dimensional ZnO/ZrO2 core/shell nanowires (NWs) are studied in this work. The ZnO/ZrO2 core/shell structures were synthesized by coating thin ZrO2 layers on the surface of ZnO NWs using atomic layer deposition. The morphological and structural characterization studies reveal that the ZrO2 shells have a polycrystalline structure, which are uniformly and conformally coated on the high quality single-crystal ZnO NWs. As compared with bare ZnO NWs, the ZnO/ZrO2 core/shell structures show a remarkable and continuous enhancement of ultraviolet (UV) emission in intensity with increasing ZrO2 shell thickness up to 10 nm. The great improvement mechanism of the UV emission arises from the surface passivation and the efficient carrier confinement effect of the type-I core/shell system. Moreover, it is observed that the UV emission of ZnO/ZrO2 core/shell structures after thermal annealing increases with increasing annealing temperature. The dominant surface exciton (SX) emission in the bare ZnO NWs and the ZnO/ZrO2 core/shell nanostructures has been detected in the low temperature photoluminescence spectra. A blue shift of the NBE emission peak as well as the varied decay rate of the SX emission intensity are also found in the ZnO NWs after the growth of ZrO2 shells and further thermal treatment. Our results suggest that the ZnO/ZrO2 core/shell nanostructures could be widely implemented in the optical and electronic devices in the future.

  10. Photoluminescence enhancement of ZnO nanowire arrays by atomic layer deposition of ZrO2 layers and thermal annealing.

    PubMed

    Zhang, Yuan; Lu, Hong-Liang; Wang, Tao; Ren, Qing-Hua; Chen, Hong-Yan; Zhang, Hao; Ji, Xin-Ming; Liu, Wen-Jun; Ding, Shi-Jin; Zhang, David Wei

    2016-06-28

    The effects of shell thickness and rapid thermal annealing on photoluminescence properties of one-dimensional ZnO/ZrO2 core/shell nanowires (NWs) are studied in this work. The ZnO/ZrO2 core/shell structures were synthesized by coating thin ZrO2 layers on the surface of ZnO NWs using atomic layer deposition. The morphological and structural characterization studies reveal that the ZrO2 shells have a polycrystalline structure, which are uniformly and conformally coated on the high quality single-crystal ZnO NWs. As compared with bare ZnO NWs, the ZnO/ZrO2 core/shell structures show a remarkable and continuous enhancement of ultraviolet (UV) emission in intensity with increasing ZrO2 shell thickness up to 10 nm. The great improvement mechanism of the UV emission arises from the surface passivation and the efficient carrier confinement effect of the type-I core/shell system. Moreover, it is observed that the UV emission of ZnO/ZrO2 core/shell structures after thermal annealing increases with increasing annealing temperature. The dominant surface exciton (SX) emission in the bare ZnO NWs and the ZnO/ZrO2 core/shell nanostructures has been detected in the low temperature photoluminescence spectra. A blue shift of the NBE emission peak as well as the varied decay rate of the SX emission intensity are also found in the ZnO NWs after the growth of ZrO2 shells and further thermal treatment. Our results suggest that the ZnO/ZrO2 core/shell nanostructures could be widely implemented in the optical and electronic devices in the future. PMID:27263423

  11. Silver Nanowires Binding with Sputtered ZnO to Fabricate Highly Conductive and Thermally Stable Transparent Electrode for Solar Cell Applications.

    PubMed

    Singh, Manjeet; Rana, Tanka R; Kim, SeongYeon; Kim, Kihwan; Yun, Jae Ho; Kim, JunHo

    2016-05-25

    Silver nanowire (AgNW) film has been demonstrated as excellent and low cost transparent electrode in organic solar cells as an alternative to replace scarce and expensive indium tin oxide (ITO). However, the low contact area and weak adhesion with low-lying surface as well as junction resistance between nanowires have limited the applications of AgNW film to thin film solar cells. To resolve this problem, we fabricated AgNW film as transparent conductive electrode (TCE) by binding with a thin layer of sputtered ZnO (40 nm) which not only increased contact area with low-lying surface in thin film solar cell but also improved conductivity by connecting AgNWs at the junction. The TCE thus fabricated exhibited transparency and sheet resistance of 92% and 20Ω/□, respectively. Conductive atomic force microscopy (C-AFM) study revealed the enhancement of current collection vertically and laterally through AgNWs after coating with ZnO thin film. The CuInGaSe2 solar cell with TCE of our AgNW(ZnO) demonstrated the maximum power conversion efficiency of 13.5% with improved parameters in comparison to solar cell fabricated with conventional ITO as TCE. PMID:27149372

  12. Silver Nanowires Binding with Sputtered ZnO to Fabricate Highly Conductive and Thermally Stable Transparent Electrode for Solar Cell Applications.

    PubMed

    Singh, Manjeet; Rana, Tanka R; Kim, SeongYeon; Kim, Kihwan; Yun, Jae Ho; Kim, JunHo

    2016-05-25

    Silver nanowire (AgNW) film has been demonstrated as excellent and low cost transparent electrode in organic solar cells as an alternative to replace scarce and expensive indium tin oxide (ITO). However, the low contact area and weak adhesion with low-lying surface as well as junction resistance between nanowires have limited the applications of AgNW film to thin film solar cells. To resolve this problem, we fabricated AgNW film as transparent conductive electrode (TCE) by binding with a thin layer of sputtered ZnO (40 nm) which not only increased contact area with low-lying surface in thin film solar cell but also improved conductivity by connecting AgNWs at the junction. The TCE thus fabricated exhibited transparency and sheet resistance of 92% and 20Ω/□, respectively. Conductive atomic force microscopy (C-AFM) study revealed the enhancement of current collection vertically and laterally through AgNWs after coating with ZnO thin film. The CuInGaSe2 solar cell with TCE of our AgNW(ZnO) demonstrated the maximum power conversion efficiency of 13.5% with improved parameters in comparison to solar cell fabricated with conventional ITO as TCE.

  13. Guided growth of horizontal nanowires: A new path to self-integrated nanosystems

    NASA Astrophysics Data System (ADS)

    Joselevich, Ernesto

    2014-03-01

    The large-scale assembly of nanowires with controlled orientation on surfaces remains one of the most critical challenges toward their integration into practical devices. We report the vapor-liquid-solid growth of perfectly aligned, millimeter-long, horizontal GaN and ZnO nanowires with controlled crystallographic orientations on different planes of sapphire and other substrates. The growth directions, crystallographic orientation and faceting of the nanowires vary with each surface orientation, as determined by their epitaxial relationship with the substrate, as well as by a graphoepitaxial effect that guides their growth along surface steps and grooves. Despite their interaction with the surface, these horizontally grown nanowires display few structural defects, exhibiting optical and electronic properties comparable to those of vertically grown nanowires. Guided GaN nanowires and ZnO nanowires present general similarities and a few interesting differences, which shed light into the guided growth mechanism. The controlled horizontal growth of nanowires of different materials on different substrates proves the generality of the guided growth approach. Recently, we demonstrated the feasibility of massively parallel ``self-integration'' of NWs into functional systems based on guided growth, including hundreds of sing-NW based field-effect transistors made all at once, and complex logic circuits, such as a 3-bit address decoder. These examples highlight the potential of guided growth for the large-scale integration of nanowires into practical devices.

  14. TiO2/BiVO4 Nanowire Heterostructure Photoanodes Based on Type II Band Alignment

    PubMed Central

    2016-01-01

    Metal oxides that absorb visible light are attractive for use as photoanodes in photoelectrosynthetic cells. However, their performance is often limited by poor charge carrier transport. We show that this problem can be addressed by using separate materials for light absorption and carrier transport. Here, we report a Ta:TiO2|BiVO4 nanowire photoanode, in which BiVO4 acts as a visible light-absorber and Ta:TiO2 acts as a high surface area electron conductor. Electrochemical and spectroscopic measurements provide experimental evidence for the type II band alignment necessary for favorable electron transfer from BiVO4 to TiO2. The host–guest nanowire architecture presented here allows for simultaneously high light absorption and carrier collection efficiency, with an onset of anodic photocurrent near 0.2 V vs RHE, and a photocurrent density of 2.1 mA/cm2 at 1.23 V vs RHE. PMID:27163032

  15. Au catalyst assisted growth of ZnO nanowires by vapour phase transport method on p-Si and fabrication of p-Si/n-ZnO heterojunction diode

    SciTech Connect

    Bhat, Shashidhara; V, Shrisha B.; Naik, K Gopalakrishna

    2015-06-24

    In this work ZnO nanowires were grown on p type silicon (p-Si) substrate using Vapor-Liquid-Solid (VLS) approach using Au as catalyst by vapor phase transport growth method. Surface morphology and structural properties of the grown ZnO nanowires were examined by Scanning electron microscope (SEM) and X-ray diffraction (XRD), respectively. Using the n-ZnO nanowires (NW) grown on p-type silicon, n-ZnO NW/p-Si heterojunction diode was fabricated. The rectification property of the fabricated diode was studied by room temperature as well as high temperature (up to 370 K) current-voltage (I-V) measurements.

  16. Efficient Z-scheme charge separation in novel vertically aligned ZnO/CdSSe nanotrees

    NASA Astrophysics Data System (ADS)

    Li, Zhengxin; Nieto-Pescador, Jesus; Carson, Alexander J.; Blake, Jolie C.; Gundlach, Lars

    2016-04-01

    A new tree-like ZnO/CdSSe nanocomposite with CdSSe branches grown on ZnO nanowires prepared via a two-step chemical vapor deposition is presented. The nanotrees (NTs) are vertically aligned on a substrate. The CdSSe branches result in strong visible light absorption and form a type-II heterojunction with the ZnO stem that facilitates efficient electron transfer. A combination of photoluminescence spectroscopy and lifetime measurements indicates that the NTs are promising materials for applications that benefit from a Z-scheme charge transfer mechanism. Vertically aligned branched ZnO nanowires can provide direct electron transport pathways to substrates and allow for efficient charge separation. These advantages of nanoscale hierarchical heterostructures make ZnO/CdSSe NTs a promising semiconductor material for solar cells, and other opto-electronic devices.

  17. A template and catalyst-free metal-etching-oxidation method to synthesize aligned oxide nanowire arrays: NiO as an example.

    PubMed

    Wei, Zhi Peng; Arredondo, Miryam; Peng, Hai Yang; Zhang, Zhou; Guo, Dong Lai; Xing, Guo Zhong; Li, Yong Feng; Wong, Lai Mun; Wang, Shi Jie; Valanoor, Nagarajan; Wu, Tom

    2010-08-24

    Although NiO is one of the canonical functional binary oxides, there has been no report so far on the effective fabrication of aligned single crystalline NiO nanowire arrays. Here we report a novel vapor-based metal-etching-oxidation method to synthesize high-quality NiO nanowire arrays with good vertical alignment and morphology control. In this method, Ni foils are used as both the substrates and the nickel source; NiCl(2) powder serves as the additional Ni source and provides Cl(2) to initiate mild etching. No template is deliberately employed; instead a nanograined NiO scale formed on the NiO foil guides the vapor infiltration and assists the self-assembled growth of NiO nanowires via a novel process comprising simultaneous Cl(2) etching and gentle oxidation. Furthermore, using CoO nanowires and Co-doped NiO as examples, we show that this general method can be employed to produce nanowires of other oxides as well as the doped counterparts. PMID:20614899

  18. Photocurrent transient variation in aligned Si nanowire field-effect transistors embedded with Au nanoparticles

    NASA Astrophysics Data System (ADS)

    Zhang, Dong; Kong, Tao; Wang, Miao; Xiao, Miao; Zhang, Zhaochun; Cheng, Guosheng

    2016-09-01

    Photocurrent transient variation caused by hot-electron transfer was detected in gold nanoparticles embedded in silicon nanowire field-effect transistors via their electrical response under illumination. The devices showed dramatic photocurrent transient variation at various illumination wavelengths (300, 500, 700, and 900 nm). The maximum transient variation of the source-drain current was about five-fold stronger with the gold nanoparticles than without. A finite-difference time-domain method was employed to determine the response wavelength range of the photocurrent transient variation. The distribution of the local electromagnetic field at the interface of the gold nanoparticles and the silicon nanowire was calculated. The weak hot-electron transfer for incident wavelengths below 500 nm was concentrated on the three-phase boundary of air, gold, and silicon, while there was a relatively strong hot-electron transfer present at the boundary of gold and silicon in the wavelength range from 700 to 900 nm.

  19. Detecting Liquefied Petroleum Gas (LPG) at Room Temperature Using ZnSnO3/ZnO Nanowire Piezo-Nanogenerator as Self-Powered Gas Sensor.

    PubMed

    Fu, Yongming; Nie, Yuxin; Zhao, Yayu; Wang, Penglei; Xing, Lili; Zhang, Yan; Xue, Xinyu

    2015-05-20

    High sensitivity, selectivity, and reliability have been achieved from ZnSnO3/ZnO nanowire (NW) piezo-nanogenerator (NG) as self-powered gas sensor (SPGS) for detecting liquefied petroleum gas (LPG) at room temperature (RT). After being exposed to 8000 ppm LPG, the output piezo-voltage of ZnSnO3/ZnO NW SPGS under compressive deformation is 0.089 V, much smaller than that in air ambience (0.533 V). The sensitivity of the SPGS against 8000 ppm LPG is up to 83.23, and the low limit of detection is 600 ppm. The SPGS has lower sensitivity against H2S, H2, ethanol, methanol and saturated water vapor than LPG, indicating good selectivity for detecting LPG. After two months, the decline of the sensing performance is less than 6%. Such piezo-LPG sensing at RT can be ascribed to the new piezo-surface coupling effect of ZnSnO3/ZnO nanocomposites. The practical application of the device driven by human motion has also been simply demonstrated. This work provides a novel approach to fabricate RT-LPG sensors and promotes the development of self-powered sensing system.

  20. Amorphous SiOx Nanowires And Aligned Nano-Cakes: The Growth Mechanism And Photoluminescence

    NASA Astrophysics Data System (ADS)

    Al-Ruqeishi, M. S.; Nor, R. M.; Amin, Y. M.; Al-Azri, K.

    2009-06-01

    The growth of SiOx nanostructures nanowires and nano-cakes on Au-coated n-type-Silicon (100) substrate via thermal evaporation were studied. The diameters of the obtained nanowires varied from 20 nm to about 260 nm and 100 nm to several microns in length. Based on SVLS growth mechanism, the yield obtained decreased as the argon flow rate increased. A broad emission band from 290 to 600 nm is observed in the photoluminescence (PL) spectrum of these nanowires. There are five PL peaks: two blue emission peaks 465 nm (2.67 eV) and 482 nm (2.57 eV) and two green bands centred at 502 nm (2.47 eV) and 506 nm (2.45 eV) and one ultraviolet emission peak at 350 nm (3.54 eV), which may be related to the various oxygen defects and twofold coordinated silicon lone pair centres. Detailed characterizations on the resulting nanostructures were carried out using field-emission scanning electron microscopy (FESEM) and energy-dispersed X-ray spectroscopy (EDX) and X-ray diffraction (XRD).

  1. Controllable vertically aligned ZnO nanorods on flexible polyethylene naphthalate (PEN) substrate using chemical bath deposition synthesis

    NASA Astrophysics Data System (ADS)

    Shabannia, R.; Abu Hassan, H.

    2014-02-01

    Zinc oxide (ZnO) nanorods were successfully grown on polyethylene naphthalate substrates with a seed layer using a wet chemical bath deposition method at a low temperature. Using various precursor concentrations, the diameter, length, and density of the ZnO nanorods were controlled, and their optical and crystallinity properties were investigated. X-ray diffraction and field emission scanning electron microscopy were used to examine the structure and morphology of the ZnO nanorods. The obtained ZnO nanorods were hexagonal and grew vertically from the substrate in the (002) direction along the c-axis. The low compressive strain values confirmed the high-quality crystal structure of the synthesized ZnO nanorods. A 0.050 M precursor concentration resulted in nanorods with a uniform diameter along their entire length and diameters ranging from 10 nm to 40 nm. The photoluminescence results indicated that the ZnO nanorods grown using a 0.050 M precursor concentration exhibited the sharpest and most intense PL peaks in the UV range compared with the other samples. Therefore, the precursor concentration considerably influenced the growth of the ZnO nanorods. These ZnO nanorods can be greatly applied for the development of flexible, elastic electronic, and optoelectronic devices.

  2. Polarity assignment in ZnTe, GaAs, ZnO, and GaN-AlN nanowires from direct dumbbell analysis.

    PubMed

    de la Mata, Maria; Magen, Cesar; Gazquez, Jaume; Utama, Muhammad Iqbal Bakti; Heiss, Martin; Lopatin, Sergei; Furtmayr, Florian; Fernández-Rojas, Carlos J; Peng, Bo; Morante, Joan Ramon; Rurali, Riccardo; Eickhoff, Martin; Fontcuberta i Morral, Anna; Xiong, Qihua; Arbiol, Jordi

    2012-05-01

    Aberration corrected scanning transmission electron microscopy (STEM) with high angle annular dark field (HAADF) imaging and the newly developed annular bright field (ABF) imaging are used to define a new guideline for the polarity determination of semiconductor nanowires (NWs) from binary compounds in two extreme cases: (i) when the dumbbell is formed with atoms of similar mass (GaAs) and (ii) in the case where one of the atoms is extremely light (N or O: ZnO and GaN/AlN). The theoretical fundaments of these procedures allow us to overcome the main challenge in the identification of dumbbell polarity. It resides in the separation and identification of the constituent atoms in the dumbbells. The proposed experimental via opens new routes for the fine characterization of nanostructures, e.g., in electronic and optoelectronic fields, where the polarity is crucial for the understanding of their physical properties (optical and electronic) as well as their growth mechanisms.

  3. Improvement of electroluminescence performance by integration of ZnO nanowires and single-crystalline films on ZnO/GaN heterojunction

    SciTech Connect

    Shi, Zhifeng; Zhang, Yuantao Cui, Xijun; Wu, Bin; Zhuang, Shiwei; Yang, Fan; Zhang, Baolin; Du, Guotong; Yang, Xiaotian

    2014-03-31

    Heterojunction light-emitting diodes based on n-ZnO nanowires/ZnO single-crystalline films/p-GaN structure have been demonstrated for an improved electroluminescence performance. A highly efficient ultraviolet emission was observed under forward bias. Compared with conventional n-ZnO/p-GaN structure, high internal quantum efficiency and light extraction efficiency were simultaneously considered in the proposed diode. In addition, the diode can work continuously for ∼10 h with only a slight degradation in harsh environments, indicating its good reliability and application prospect in the future. This route opens possibilities for the development of advanced nanoscale devices in which the advantages of ZnO single-crystalline films and nanostructures can be integrated together.

  4. Growth of aligned single-crystalline rutile TiO2 nanowires on arbitrary substrates and their application in dye-sensitized solar cells

    SciTech Connect

    Kumar, Akshay; Madaria, Anuj R.; Zhou, Chongwu

    2010-05-06

    TiO{sub 2} is a wide band gap semiconductor with important applications in photovoltaic cells and photocatalysis. In this paper, we report synthesis of single-crystalline rutile phase TiO{sub 2} nanowires on arbitrary substrates, including fluorine-doped tin oxide (FTO), glass slides, tin-doped indium oxide (ITO), Si/SiO{sub 2}, Si(100), Si(111), and glass rods. By controlling the growth parameters such as growth temperature, precursor concentrations, and so forth, we demonstrate that anisotropic growth of TiO{sub 2} is possible leading to various morphologies of nanowires. Optimization of the growth recipe leads to well-aligned vertical array of TiO{sub 2} nanowires on both FTO and glass substrates. Effects of various titanium precursors on the growth kinetics, especially on the growth rate of nanowires, are also studied. Finally, application of vertical array of TiO{sub 2} nanowires on FTO as the photoanode is demonstrated in dye-sensitized solar cell with an efficiency of 2.9 ± 0.2%.

  5. Well aligned ZnO nanorods growth on the gold coated glass substrate by aqueous chemical growth method using seed layer of Fe3O4 and Co3O4 nanoparticles

    NASA Astrophysics Data System (ADS)

    Ibupoto, Z. H.; Khun, K.; Lu, Jun; Liu, Xianjie; AlSalhi, M. S.; Atif, M.; Ansari, Anees A.; Willander, M.

    2013-04-01

    In this study, Fe3O4 and Co3O4 nanoparticles were prepared by co-precipitation method and sol-gel method respectively. The synthesised nanoparticles were characterised by X-ray diffraction [XRD] and Raman spectroscopy techniques. The obtained results have shown the nanocrystalline phase of obtained Fe3O4 and Co3O4 nanoparticles. Furthermore, the Fe3O4 and Co3O4 nanoparticles were used as seed layer for the fabrication of well-aligned ZnO nanorods on the gold coated glass substrate by aqueous chemical growth method. Scanning electron microscopy (SEM), high resolution transmission electron microscopy [HRTEM], as well as XRD and energy dispersive X-ray techniques were used for the structural characterisation of synthesised ZnO nanorods. This study has explored highly dense, uniform, well-aligned growth pattern along 0001 direction and good crystal quality of the prepared ZnO nanorods. ZnO nanorods are only composed of Zn and O atoms. Moreover, X-ray photoelectron spectroscopy was used for the chemical analysis of fabricated ZnO nanorods. In addition, the structural characterisation and the chemical composition study and the optical investigation were carried out for the fabricated ZnO nanorods and the photoluminescence [PL] spectrum have shown strong ultraviolet (UV) peak at 381 nm for Fe3O4 nanoparticles seeded ZnO nanorods and the PL spectrum for ZnO nanorods grown with the seed layer of Co3O4 nanoparticles has shown a UV peak at 382 nm. The green emission and orange/red peaks were also observed for ZnO nanorods grown with both the seed layers. This study has indicated the fabrication of well aligned ZnO nanorods using the one inorganic nanomaterial on other inorganic nanomaterial due to their similar chemistry.

  6. Controllable synthesis of branched ZnO/Si nanowire arrays with hierarchical structure

    PubMed Central

    2014-01-01

    A rational approach for creating branched ZnO/Si nanowire arrays with hierarchical structure was developed based on a combination of three simple and cost-effective synthesis pathways. The crucial procedure included growth of crystalline Si nanowire arrays as backbones by chemical etching of Si substrates, deposition of ZnO thin film as a seed layer by magnetron sputtering, and fabrication of ZnO nanowire arrays as branches by hydrothermal growth. The successful synthesis of ZnO/Si heterogeneous nanostructures was confirmed by morphologic, structural, and optical characterizations. The roles of key experimental parameters, such as the etchant solution, the substrate direction, and the seed layer on the hierarchical nanostructure formation, were systematically investigated. It was demonstrated that an etchant solution with an appropriate redox potential of the oxidant was crucial for a moderate etching speed to achieve a well-aligned Si nanowire array with solid and round surface. Meanwhile, the presence of gravity gradient was a key issue for the growth of branched ZnO nanowire arrays. The substrate should be placed vertically or facedown in contrast to the solution surface during the hydrothermal growth. Otherwise, only the condensation of the ZnO nanoparticles took place in a form of film on the substrate surface. The seed layer played another important role in the growth of ZnO nanowire arrays, as it provided nucleation sites and determined the growing direction and density of the nanowire arrays for reducing the thermodynamic barrier. The results of this study might provide insight on the synthesis of hierarchical three-dimensional nanostructure materials and offer an approach for the development of complex devices and advanced applications. PMID:25024688

  7. Electrochemical Water Oxidation of Ultrathin Cobalt Oxide-Based Catalyst Supported onto Aligned ZnO Nanorods.

    PubMed

    Koteeswara Reddy, Nandanapalli; Winkler, Stefanie; Koch, Norbert; Pinna, Nicola

    2016-02-10

    A stable and durable electrochemical water oxidation catalyst based on CoO functionalized ZnO nanorods (NRs) is introduced. ZnO NRs were grown on fluorine-doped tin oxide (FTO) by using a low-temperature chemical solution method and were functionalized with cobalt oxide by electrochemical deposition. The electrochemical water oxidation performance of cobalt oxide functionalized ZnO NRs was studied under alkaline (pH = 10) conditions. From these studies, it is noticed that cobalt oxide functionalized ZnO NRs show electrocatalytic activity toward water oxidation with current density on the order of several mA cm(-2). Further, 30 s CoO deposited ZnO nanorods exhibited excellent galvanostatic stability at a current density of 1 mA cm(-2) and potentiostatic stability at 1.25 V vs Ag/AgCl over an electrolysis period of 1 h. PMID:26784675

  8. ZnO nanorod/porous silicon nanowire hybrid structures as highly-sensitive NO2 gas sensors at room temperature.

    PubMed

    Liao, Jiecui; Li, Zhengcao; Wang, Guojing; Chen, Chienhua; Lv, Shasha; Li, Mingyang

    2016-02-14

    ZnO nanorod/porous silicon nanowire (ZnO/PSiNW) hybrids with three different structures as highly sensitive NO2 gas sensors were obtained. PSiNWs were first synthesized by metal-assisted chemical etching, and then seeded in three different ways. After that ZnO nanorods were grown on the seeded surface of PSiNWs using a hydrothermal procedure. ZnO/PSiNW hybrids showed excellent gas sensing performance for various NO2 concentrations (5-50 ppm) at room temperature, and the electrical resistance change rate reached as high as 35.1% when responding to 50 ppm NO2. The distinct enhancement was mainly attributed to the faster carrier transportation after combination, the increase in gas sensing areas and the oxygen vacancy (VO) concentration. Moreover, the p-type gas sensing behavior was explained by the gas sensing mechanism and the effect of VO concentration on gas sensing properties was also discussed concerning the photoluminescence (PL) spectra performance.

  9. Hydrothermal treatment for the marked structural and optical quality improvement of ZnO nanowire arrays deposited on lightweight flexible substrates

    NASA Astrophysics Data System (ADS)

    Lupan, Oleg; Pauporté, Thierry

    2010-08-01

    ZnO nanowire arrays (NWs) have attracted great interest as the building blocks for emerging applications in new flexible and elastic electronic and optoelectronic devices (e.g. smart cards, light emitting diodes (LEDs), displays, etc.) with higher functionality. Since flexible plastic substrates (FPS) are important, soft post-growth treatments compatible with FPS must be found to significantly improve the properties of NWs deposited on it. We present an innovative low-temperature hydrothermal treatment in an autoclave to improve the structural and optical properties of ZnO NWs grown by electrochemical deposition at low temperature (80 °C) on transparent flexible polymer -based indium-tin-oxide (ITO) coated substrates. The layer characterizations by scanning electron microscopy (SEM) and X-ray diffraction (XRD) showed the improvement of the wire surface smoothness and of their structural quality. The observed higher excitonic photoluminescence at 381 nm and the stronger optical phonon modes in the Raman spectra demonstrated the superior performance of the post-growth hydrothermal treatment compared to a conventional annealing at the same temperature. The presented results pave the way for the realization of new highly efficient ZnO-based optoelectronic devices on flexible plastic substrates or elastic foils.

  10. ZnO nanorod/porous silicon nanowire hybrid structures as highly-sensitive NO2 gas sensors at room temperature.

    PubMed

    Liao, Jiecui; Li, Zhengcao; Wang, Guojing; Chen, Chienhua; Lv, Shasha; Li, Mingyang

    2016-02-14

    ZnO nanorod/porous silicon nanowire (ZnO/PSiNW) hybrids with three different structures as highly sensitive NO2 gas sensors were obtained. PSiNWs were first synthesized by metal-assisted chemical etching, and then seeded in three different ways. After that ZnO nanorods were grown on the seeded surface of PSiNWs using a hydrothermal procedure. ZnO/PSiNW hybrids showed excellent gas sensing performance for various NO2 concentrations (5-50 ppm) at room temperature, and the electrical resistance change rate reached as high as 35.1% when responding to 50 ppm NO2. The distinct enhancement was mainly attributed to the faster carrier transportation after combination, the increase in gas sensing areas and the oxygen vacancy (VO) concentration. Moreover, the p-type gas sensing behavior was explained by the gas sensing mechanism and the effect of VO concentration on gas sensing properties was also discussed concerning the photoluminescence (PL) spectra performance. PMID:26804157

  11. Individual Zn2SnO4-sheathed ZnO heterostructure nanowires for efficient resistive switching memory controlled by interface states

    PubMed Central

    Cheng, Baochang; Ouyang, Zhiyong; Chen, Chuan; Xiao, Yanhe; Lei, Shuijin

    2013-01-01

    Resistive switching (RS) devices are widely believed as a promising candidate for next generation nonvolatile resistance random access memory. Here, Zn2SnO4-sheathed ZnO core/shell heterostructure nanowires were constructed through a polymeric sol–gel approach followed by post-annealing. The back-to-back bipolar RS properties were observed in the Ohmic contact two-terminal devices based on individual core/shell nanowires. With increasing bias to about 1.5 V, it changes from high-resistance states (HRS) to low-resistance states, and however, it can be restored to HRS by reverse bias. We propose a new mechanism, which is attributed to the injection of electrons into/from interfacial states, arising from the lattice mismatch at ZnO/Zn2SnO4 heterointerface. Upon applying negative/positive voltage at one end of devices, where interfacial states are filled/emptied, barrier will be eliminated/created, resulting into symmetric RS characteristics. The behavior of storage and removal charges demonstrates that the heterostructures have excellent properties for the application in resistance random access memory. PMID:24247976

  12. Self-assembled, aligned ZnO nanorod buffer layers for high-current-density, inverted organic photovoltaics.

    PubMed

    Rao, Arun D; Karalatti, Suresh; Thomas, Tiju; Ramamurthy, Praveen C

    2014-10-01

    Two different soft-chemical, self-assembly-based solution approaches are employed to grow zinc oxide (ZnO) nanorods with controlled texture. The methods used involve seeding and growth on a substrate. Nanorods with various aspect ratios (1-5) and diameters (15-65 nm) are grown. Obtaining highly oriented rods is determined by the way the substrate is mounted within the chemical bath. Furthermore, a preheat and centrifugation step is essential for the optimization of the growth solution. In the best samples, we obtain ZnO nanorods that are almost entirely oriented in the (002) direction; this is desirable since electron mobility of ZnO is highest along this crystallographic axis. When used as the buffer layer of inverted organic photovoltaics (I-OPVs), these one-dimensional (1D) nanostructures offer: (a) direct paths for charge transport and (b) high interfacial area for electron collection. The morphological, structural, and optical properties of ZnO nanorods are studied using scanning electron microscopy, X-ray diffraction, and ultraviolet-visible light (UV-vis) absorption spectroscopy. Furthermore, the surface chemical features of ZnO films are studied using X-ray photoelectron spectroscopy and contact angle measurements. Using as-grown ZnO, inverted OPVs are fabricated and characterized. For improving device performance, the ZnO nanorods are subjected to UV-ozone irradiation. UV-ozone treated ZnO nanorods show: (i) improvement in optical transmission, (ii) increased wetting of active organic components, and (iii) increased concentration of Zn-O surface bonds. These observations correlate well with improved device performance. The devices fabricated using these optimized buffer layers have an efficiency of ∼3.2% and a fill factor of 0.50; this is comparable to the best I-OPVs reported that use a P3HT-PCBM active layer.

  13. Hydrothermal synthesis of highly crystalline ZnO nanorod arrays: Dependence of morphology and alignment on growth conditions

    NASA Astrophysics Data System (ADS)

    Azzez, Shrook A.; Hassan, Z.; Hassan, J. J.; Alimanesh, M.; Rasheed, Hiba S.; Sabah, Fayroz A.; Abdulateef, Sinan A.

    2016-07-01

    Highly oriented zinc oxide nanorod were successfully grown on seeded p-type silicone substrate by hydrothermal methode. The morphology and the crystallinty of ZnO c-axis (002) arrays were systematically studied using field emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD) methods. The effect of seed layer pre-annealing on nanorods properties was explained according to the nucleation site of ZnO nanoparticles on silicon substrate. In addition, the variation of the equal molarity of zinc nitrate hexahydrate and hexamine concentrations in the reaction vessel play a crucial role related to the ZnO nanorods.

  14. Stereo-epitaxial growth of single-crystal Ni nanowires and nanoplates from aligned seed crystals

    NASA Astrophysics Data System (ADS)

    Lee, Hyoban; Yoo, Youngdong; Kang, Taejoon; Lee, Jiyoung; Kim, Eungwang; Fang, Xiaosheng; Lee, Sungyul; Kim, Bongsoo

    2016-05-01

    Epitaxially grown anisotropic Ni nanostructures are promising building blocks for the development of miniaturized and stereo-integrated data storage kits because they can store multiple magnetic domain walls (DWs). Here, we report stereo-epitaxially grown single-crystalline Ni nanowires (NWs) and nanoplates, and their magnetic properties. Vertical and inclined Ni NWs were grown at the center and edge regions of c-cut sapphire substrates, respectively. Vertical Ni nanoplates were grown on r-cut sapphire substrates. The morphology and growth direction of Ni nanostructures can be steered by seed crystals. Cubic Ni seeds grow into vertical Ni NWs, tetrahedral Ni seeds grow into inclined Ni NWs, and triangular Ni seeds grow into vertical Ni nanoplates. The shapes of the Ni seeds are determined by the interfacial energy between the bottom plane of the seeds and the substrates. The as-synthesized Ni NWs and nanoplates have blocking temperature values greater than 300 K at 500 Oe, verifying that these Ni nanostructures can form large magnetic DWs with high magnetic anisotropy properties. We anticipate that epitaxially grown Ni NWs and nanoplates will be used in various types of 3-dimensional magnetic devices.Epitaxially grown anisotropic Ni nanostructures are promising building blocks for the development of miniaturized and stereo-integrated data storage kits because they can store multiple magnetic domain walls (DWs). Here, we report stereo-epitaxially grown single-crystalline Ni nanowires (NWs) and nanoplates, and their magnetic properties. Vertical and inclined Ni NWs were grown at the center and edge regions of c-cut sapphire substrates, respectively. Vertical Ni nanoplates were grown on r-cut sapphire substrates. The morphology and growth direction of Ni nanostructures can be steered by seed crystals. Cubic Ni seeds grow into vertical Ni NWs, tetrahedral Ni seeds grow into inclined Ni NWs, and triangular Ni seeds grow into vertical Ni nanoplates. The shapes of the Ni

  15. Stereo-epitaxial growth of single-crystal Ni nanowires and nanoplates from aligned seed crystals.

    PubMed

    Lee, Hyoban; Yoo, Youngdong; Kang, Taejoon; Lee, Jiyoung; Kim, Eungwang; Fang, Xiaosheng; Lee, Sungyul; Kim, Bongsoo

    2016-05-21

    Epitaxially grown anisotropic Ni nanostructures are promising building blocks for the development of miniaturized and stereo-integrated data storage kits because they can store multiple magnetic domain walls (DWs). Here, we report stereo-epitaxially grown single-crystalline Ni nanowires (NWs) and nanoplates, and their magnetic properties. Vertical and inclined Ni NWs were grown at the center and edge regions of c-cut sapphire substrates, respectively. Vertical Ni nanoplates were grown on r-cut sapphire substrates. The morphology and growth direction of Ni nanostructures can be steered by seed crystals. Cubic Ni seeds grow into vertical Ni NWs, tetrahedral Ni seeds grow into inclined Ni NWs, and triangular Ni seeds grow into vertical Ni nanoplates. The shapes of the Ni seeds are determined by the interfacial energy between the bottom plane of the seeds and the substrates. The as-synthesized Ni NWs and nanoplates have blocking temperature values greater than 300 K at 500 Oe, verifying that these Ni nanostructures can form large magnetic DWs with high magnetic anisotropy properties. We anticipate that epitaxially grown Ni NWs and nanoplates will be used in various types of 3-dimensional magnetic devices. PMID:27129106

  16. Stereo-epitaxial growth of single-crystal Ni nanowires and nanoplates from aligned seed crystals.

    PubMed

    Lee, Hyoban; Yoo, Youngdong; Kang, Taejoon; Lee, Jiyoung; Kim, Eungwang; Fang, Xiaosheng; Lee, Sungyul; Kim, Bongsoo

    2016-05-21

    Epitaxially grown anisotropic Ni nanostructures are promising building blocks for the development of miniaturized and stereo-integrated data storage kits because they can store multiple magnetic domain walls (DWs). Here, we report stereo-epitaxially grown single-crystalline Ni nanowires (NWs) and nanoplates, and their magnetic properties. Vertical and inclined Ni NWs were grown at the center and edge regions of c-cut sapphire substrates, respectively. Vertical Ni nanoplates were grown on r-cut sapphire substrates. The morphology and growth direction of Ni nanostructures can be steered by seed crystals. Cubic Ni seeds grow into vertical Ni NWs, tetrahedral Ni seeds grow into inclined Ni NWs, and triangular Ni seeds grow into vertical Ni nanoplates. The shapes of the Ni seeds are determined by the interfacial energy between the bottom plane of the seeds and the substrates. The as-synthesized Ni NWs and nanoplates have blocking temperature values greater than 300 K at 500 Oe, verifying that these Ni nanostructures can form large magnetic DWs with high magnetic anisotropy properties. We anticipate that epitaxially grown Ni NWs and nanoplates will be used in various types of 3-dimensional magnetic devices.

  17. A generic approach for vertical integration of nanowires.

    PubMed

    Latu-Romain, E; Gilet, P; Noel, P; Garcia, J; Ferret, P; Rosina, M; Feuillet, G; Lévy, F; Chelnokov, A

    2008-08-27

    We report on the collective integration technology of vertically aligned nanowires (NWs). Si and ZnO NWs have been used in order to develop a generic technological process. Both mineral and organic planarizations of the as-grown nanowires have been achieved. Chemical vapour deposition (CVD) oxides, spin on glass (SOG), and polymer have been investigated as filling materials. Polishing and/or etching of the composite structures have been set up so as to obtain a suitable morphology for the top and bottom electrical contacts. Electrical and optical characterizations of the integrated NWs have been performed. Contacts ohmicity has been demonstrated and specific contact resistances have been reported. The photoconducting properties of polymer-integrated ZnO NWs have also been investigated in the UV-visible range through collective electrical contacts. A small increase of the resistivity in the ZnO NWs under sub-bandgap illumination has been observed and discussed. A comparison of the photoluminescence (PL) spectra at 300 K of the as-grown and SOG-integrated ZnO nanowires has shown no significant impact of the integration process on the crystal quality of the NWs.

  18. A generic approach for vertical integration of nanowires.

    PubMed

    Latu-Romain, E; Gilet, P; Noel, P; Garcia, J; Ferret, P; Rosina, M; Feuillet, G; Lévy, F; Chelnokov, A

    2008-08-27

    We report on the collective integration technology of vertically aligned nanowires (NWs). Si and ZnO NWs have been used in order to develop a generic technological process. Both mineral and organic planarizations of the as-grown nanowires have been achieved. Chemical vapour deposition (CVD) oxides, spin on glass (SOG), and polymer have been investigated as filling materials. Polishing and/or etching of the composite structures have been set up so as to obtain a suitable morphology for the top and bottom electrical contacts. Electrical and optical characterizations of the integrated NWs have been performed. Contacts ohmicity has been demonstrated and specific contact resistances have been reported. The photoconducting properties of polymer-integrated ZnO NWs have also been investigated in the UV-visible range through collective electrical contacts. A small increase of the resistivity in the ZnO NWs under sub-bandgap illumination has been observed and discussed. A comparison of the photoluminescence (PL) spectra at 300 K of the as-grown and SOG-integrated ZnO nanowires has shown no significant impact of the integration process on the crystal quality of the NWs. PMID:21730646

  19. The clash of mechanical and electrical size-effects in ZnO nanowires and a double power law approach to elastic strain engineering of piezoelectric and piezotronic devices.

    PubMed

    Rinaldi, Antonio; Araneo, Rodolfo; Celozzi, Salvatore; Pea, Marialilia; Notargiacomo, Andrea

    2014-09-10

    The piezoelectric performance of ultra-strength ZnO nanowires (NWs) depends on the subtle interplay between electrical and mechanical size-effects. "Size-dependent" modeling of compressed NWs illustrates why experimentally observed mechanical stiffening can indeed collide with electrical size-effects when the size shrinks, thereby lowering the actual piezoelectric function from bulk estimates. "Smaller" is not necessarily "better" in nanotechnology.

  20. Functionalized vertically aligned ZnO nanorods for application in electrolyte-insulator-semiconductor based pH sensors and label-free immuno-sensors

    NASA Astrophysics Data System (ADS)

    Kumar, Narendra; Senapati, Sujata; Kumar, Satyendra; Kumar, Jitendra; Panda, Siddhartha

    2016-04-01

    Vertically aligned ZnO nanorods were grown on a SiO2/Si surface by optimization of the temperature and atmosphere for annealing of the seed. The seed layer annealed at 500 °C in vacuum provided well separated and uniform seeds which also provided the best condition to get densely packed, uniformly distributed, and vertically aligned nanorods. These nanorods grown on the substrates were used to fabricate electrolyte-insulator-semiconductor (EIS) devices for pH sensing. Etching of ZnO at acidic pH prevents the direct use of nanorods for pH sensing. Therefore, the nanorods functionalised with 3-aminopropyltriethoxysilane (APTES) were utilized for pH sensing and showed the pH sensitivity of 50.1 mV/pH. APTES is also known to be used as a linker to immobilize biomolecules (such as antibodies). The EIS device with APTES functionalized nanorods was used for the label free detection of prostate-specific antigen (PSA). Finally, voltage shifts of 23 mV and 35 mV were observed with PSA concentrations of 1 ng/ml and 100 ng/ml, respectively.

  1. Aligned platinum nanowire networks from surface-oriented lipid cubic phase templates

    NASA Astrophysics Data System (ADS)

    Richardson, S. J.; Burton, M. R.; Staniec, P. A.; Nandhakumar, I. S.; Terrill, N. J.; Elliott, J. M.; Squires, A. M.

    2016-01-01

    Mesoporous metal structures featuring a bicontinuous cubic morphology have a wide range of potential applications and novel opto-electronic properties, often orientation-dependent. We describe the production of nanostructured metal films 1-2 microns thick featuring 3D-periodic `single diamond' morphology that show high out-of-plane alignment, with the (111) plane oriented parallel to the substrate. These are produced by electrodeposition of platinum through a lipid cubic phase (QII) template. Further investigation into the mechanism for the orientation revealed the surprising result that the QII template, which is tens of microns thick, is polydomain with no overall orientation. When thicker platinum films are grown, they also show increased orientational disorder. These results suggest that polydomain QII samples display a region of uniaxial orientation at the lipid/substrate interface up to approximately 2.8 +/- 0.3 μm away from the solid surface. Our approach gives previously unavailable information on the arrangement of cubic phases at solid interfaces, which is important for many applications of QII phases. Most significantly, we have produced a previously unreported class of oriented nanomaterial, with potential applications including metamaterials and lithographic masks.Mesoporous metal structures featuring a bicontinuous cubic morphology have a wide range of potential applications and novel opto-electronic properties, often orientation-dependent. We describe the production of nanostructured metal films 1-2 microns thick featuring 3D-periodic `single diamond' morphology that show high out-of-plane alignment, with the (111) plane oriented parallel to the substrate. These are produced by electrodeposition of platinum through a lipid cubic phase (QII) template. Further investigation into the mechanism for the orientation revealed the surprising result that the QII template, which is tens of microns thick, is polydomain with no overall orientation. When thicker

  2. Piezo-Phototronic Enhanced UV Sensing Based on a Nanowire Photodetector Array.

    PubMed

    Han, Xun; Du, Weiming; Yu, Ruomeng; Pan, Caofeng; Wang, Zhong Lin

    2015-12-22

    A large array of Schottky UV photodetectors (PDs) based on vertical aligned ZnO nanowires is achieved. By introducing the piezo-phototronic effect, the performance of the PD array is enhanced up to seven times in photoreponsivity, six times in sensitivity, and 2.8 times in detection limit. The UV PD array may have applications in optoelectronic systems, adaptive optical computing, and communication.

  3. Obtaining a Well-Aligned ZnO Nanotube Array Using the Hydrothermal Growth Method / Labi Sakārtotu Zno Nanocauruļu Kopu Iegūšana, Izmantojot Hidrotermālo Metodi

    NASA Astrophysics Data System (ADS)

    Krasovska, M.; Gerbreders, V.; Paskevics, V.; Ogurcovs, A.; Mihailova, I.

    2015-10-01

    Optimal growing parameters have been found using the hydrothermal method to obtain well-aligned vertical ZnO nanorod and nanotube arrays. The influence of different growing factors (such as temperature, growing solution concentration, method of obtaining seed layer and condition) on nanotube morphology and size is described in the paper. Well-structured ZnO nanotubes have been obtained by using a selfselective etching method with lowering temperatures of growth during the hydrothermal process. It is shown that the optical properties of the nanostructure arrays obtained are sensitive to the medium in which they are placed, which is why they can be used as sensors for pure substance detection and in different solutions for impurity determination. Dotajā darbā tika noteikti optimāli parametri labi sakārtotu ZnO nanocaurulīšu kopu iegūšanai, izmantojot hidrotermālo metodi ar temperatūras pazemināšanu, jeb t.s. selektīvu pa\\vskodināšanas metodi (self-selective etching), ir uzsvērtas šās metodes priekšrocības salīdzinājumā ar ķīmiskās kodināšanas metodi, kā arī tika aprakstīta dažādu augšanas faktora (tādu, ka darba šķīduma koncentrācija, augšanas temperatūra un laiks, iedīgļu slāņa iegūšanas veids un iegūšanas parametri) ietekme uz iegūtu nanostraktūra morfoloģiju. Tika konstatēts, ka noteicošu lomu ZnO nanocaurulīšu audzēšanas procesā spēlē iedīgļu slāņa graudu izmēri, kas savā staipā nosaka augošu nanostieņu izmērus un to tendenci pie pa\\vskodināšanas. Rentgenogrannnas parāda, ka iegūtām pie noteiktiem parametriem ZnO nanostruktūrām piemīt augsta kristāliskuma pakāpe un sakārtotība vertikālā virzienā. Optiskie mērījumi parāda, ka ZnO nanocauralītes ir jutīgas gan pret tīrām vielām (ūdens, spirts), gan pret dažādiem šķīdumiem, kas ļauj izmantot tos kā pie­jaukumu sensora. Salīdzinājumā ar ZnO nanostieņiem caurulīšu jūtība pieaug, jo pieaug nanostrakt

  4. Self-aligned process for forming microlenses at the tips of vertical silicon nanowires by atomic layer deposition

    SciTech Connect

    Dan, Yaping Chen, Kaixiang; Crozier, Kenneth B.

    2015-01-01

    The microlens is a key enabling technology in optoelectronics, permitting light to be efficiently coupled to and from devices such as image sensors and light-emitting diodes. Their ubiquitous nature motivates the development of new fabrication techniques, since existing methods face challenges as microlenses are scaled to smaller dimensions. Here, the authors demonstrate the formation of microlenses at the tips of vertically oriented silicon nanowires via a rapid atomic layer deposition process. The nature of the process is such that the microlenses are centered on the nanowires, and there is a self-limiting effect on the final sizes of the microlenses arising from the nanowire spacing. Finite difference time domain electromagnetic simulations are performed of microlens focusing properties, including showing their ability to enhance visible-wavelength absorption in silicon nanowires.

  5. Growth of Cu{sub 2}O on Ga-doped ZnO and their interface energy alignment for thin film solar cells

    SciTech Connect

    Wong, L. M.; Chiam, S. Y.; Wang, S. J.; Pan, J. S.; Huang, J. Q.; Chim, W. K.

    2010-08-15

    Cu{sub 2}O thin films are deposited by direct current reactive magnetron sputtering on borofloat glass and indium tin oxide (ITO) coated glass at room temperature. The effect of oxygen partial pressure on the structures and properties of Cu{sub 2}O thin films are investigated. We show that oxygen partial pressure is a crucial parameter in achieving pure phases of CuO and Cu{sub 2}O. Based on this finding, we fabricate heterojunctions of p-type Cu{sub 2}O with n-type gallium doped ZnO (GZO) on ITO coated glass substrates by pulsed laser deposition for GZO thin films. The energy band alignment for thin films of Cu{sub 2}O/GZO on ITO glass is characterized using high-resolution x-ray photoelectron spectroscopy. The energy band alignment for the Cu{sub 2}O/GZO heterojunctions is determined to be type II with a valence band offset of 2.82 eV and shows negligible effects of variation with gallium doping. The higher conduction band of the Cu{sub 2}O relative to that of GZO in the obtained band alignment shows that the heterojunctions are suitable for solar cell application based on energy levels consideration.

  6. Growth of Cu2O on Ga-doped ZnO and their interface energy alignment for thin film solar cells

    NASA Astrophysics Data System (ADS)

    Wong, L. M.; Chiam, S. Y.; Huang, J. Q.; Wang, S. J.; Pan, J. S.; Chim, W. K.

    2010-08-01

    Cu2O thin films are deposited by direct current reactive magnetron sputtering on borofloat glass and indium tin oxide (ITO) coated glass at room temperature. The effect of oxygen partial pressure on the structures and properties of Cu2O thin films are investigated. We show that oxygen partial pressure is a crucial parameter in achieving pure phases of CuO and Cu2O. Based on this finding, we fabricate heterojunctions of p-type Cu2O with n-type gallium doped ZnO (GZO) on ITO coated glass substrates by pulsed laser deposition for GZO thin films. The energy band alignment for thin films of Cu2O/GZO on ITO glass is characterized using high-resolution x-ray photoelectron spectroscopy. The energy band alignment for the Cu2O/GZO heterojunctions is determined to be type II with a valence band offset of 2.82 eV and shows negligible effects of variation with gallium doping. The higher conduction band of the Cu2O relative to that of GZO in the obtained band alignment shows that the heterojunctions are suitable for solar cell application based on energy levels consideration.

  7. Band alignment at the interface between Ni-doped Cr2O3 and Al-doped ZnO: implications for transparent p-n junctions

    NASA Astrophysics Data System (ADS)

    Arca, Elisabetta; McInerney, Michael A.; Shvets, Igor V.

    2016-06-01

    The realization of transparent electronic and optoelectronic devices requires the use of transparent p-n junctions. In this context, understanding the band alignment at the interface between the p- and n-components represents a fundamental step towards the realization of high performance devices. In this work, the band alignment at the interface between Al-doped ZnO (AZO) and Ni-doped Cr2O3 has been analysed. The formation and evolution of the core levels as the interface progressively forms have been followed by means of x-ray Photoelectron Spectroscopy, x-ray diffraction and x-ray reflectivity. A type two (staggered) band alignment was identified, with the valence band offset and conduction band offset found to be 2.6 eV and 2.5 eV, respectively. The electrical behaviour will be discussed in terms of the position of the bands, the presence of band bending and the expected built-in potential and how these can be engineered in order to achieve the maximum performance for this hetero-structure.

  8. Vertical p-type Cu-doped ZnO/n-type ZnO homojunction nanowire-based ultraviolet photodetector by the furnace system with hotwire assistance.

    PubMed

    Hsu, Cheng-Liang; Gao, Yi-Dian; Chen, You-Syuan; Hsueh, Ting-Jen

    2014-03-26

    Vertical p-ZnO:Cu/n-ZnO homojunction nanowires (NWs) and whole ZnO:Cu NWs were synthesized on a ZnO thin film/glass substrate by a furnace at 600 °C with 1700 °C hotwire assistance. According to the ZnO:Cu NW investigation, the energy-dispersive X-ray (EDX) spectrum indicates that the Cu content is 3.01 atomic %. The X-ray diffraction (XRD) peaks of ZnO:Cu NWs shift toward larger angles with increasing amounts of doped Cu. The Cu dopant enhanced the photoluminescence (PL) green-band peak and decreased the conductivity of the NWs, as measured by I-V. The gas sensing measurement and Hall effect verified that all ZnO:Cu NWs were p-type. In this study, transmission electron microscopy (TEM) and EDX mapping images revealed that the majority of the Cu element is located at the top of the p-ZnO:Cu/n-ZnO NW. The high-resolution transmission electron microscopy (HRTEM) image of the p-ZnO:Cu region shows that the NWs are [0001] growth-oriented, with lateral surfaces enclosed by (1̅101) planes. The I-V curve of p-ZnO:Cu/n-ZnO NWs displays the characteristics of normal rectifying diodes. The photocurrent under ultraviolet (UV) exposure was around 6 times higher than the dark current at the reverse bias of -5 V.

  9. A high-sensitivity, fast-response, rapid-recovery UV photodetector fabricated based on catalyst-free growth of ZnO nanowire networks on glass substrate

    NASA Astrophysics Data System (ADS)

    Alsultany, Forat H.; Hassan, Z.; Ahmed, Naser M.

    2016-10-01

    Here, we report for the first time the fabrication of metal-semiconductor-metal ultraviolet photodetector based on catalyst-free growth of ZnO nanowire networks on ITO seeds/glass substrates by thermal evaporation method. The morphological, structural, and optical properties of the sample were studied by using field emission scanning electron microscopy, X-ray diffraction, photoluminescence, and UV-Vis spectrophotometer. Upon exposure to 365 nm light (1.5 mW/cm2) at five-bias voltage, the device showed 2.32 × 103 sensitivity. In addition, the photocurrent was 1.79 × 10-4 A, and the internal gain of the photodetector was 24.2. The response and the recovery times were calculated to be 3.9 and 2.6 s, respectively, upon illumination to a pulse UV light (365 nm, 1.5 mW/cm2) at five-bias voltage. All of these results demonstrate that this high-quality detector can be a promising candidate as a low-cost UV photodetector for commercially integrated photoelectronic applications.

  10. Fluorinated copper phthalocyanine nanowires for enhancing interfacial electron transport in organic solar cells.

    PubMed

    Yoon, Seok Min; Lou, Sylvia J; Loser, Stephen; Smith, Jeremy; Chen, Lin X; Facchetti, Antonio; Marks, Tobin J; Marks, Tobin

    2012-12-12

    Zinc oxide is a promising candidate as an interfacial layer (IFL) in inverted organic photovoltaic (OPV) cells due to the n-type semiconducting properties as well as chemical and environmental stability. Such ZnO layers collect electrons at the transparent electrode, typically indium tin oxide (ITO). However, the significant resistivity of ZnO IFLs and an energetic mismatch between the ZnO and the ITO layers hinder optimum charge collection. Here we report that inserting nanoscopic copper hexadecafluorophthalocyanine (F(16)CuPc) layers, as thin films or nanowires, between the ITO anode and the ZnO IFL increases OPV performance by enhancing interfacial electron transport. In inverted P3HT:PC(61)BM cells, insertion of F(16)CuPc nanowires increases the short circuit current density (J(sc)) versus cells with only ZnO layers, yielding an enhanced power conversion efficiency (PCE) of ∼3.6% vs ∼3.0% for a control without the nanowire layer. Similar effects are observed for inverted PTB7:PC(71)BM cells where the PCE is increased from 8.1% to 8.6%. X-ray scattering, optical, and electrical measurements indicate that the performance enhancement is ascribable to both favorable alignment of the nanowire π-π stacking axes parallel to the photocurrent flow and to the increased interfacial layer-active layer contact area. These findings identify a promising strategy to enhance inverted OPV performance by inserting anisotropic nanostructures with π-π stacking aligned in the photocurrent flow direction.

  11. Highly efficient one-dimensional ZnO nanowire-based dye-sensitized solar cell using a metal-free, D-π-A-type, carbazole derivative with more than 5% power conversion.

    PubMed

    Barpuzary, Dipankar; Patra, Anindya S; Vaghasiya, Jayraj V; Solanki, Bharat G; Soni, Saurabh S; Qureshi, Mohammad

    2014-08-13

    Hydrothermally grown one-dimensional ZnO nanowire (1D ZnO NW) and a newly synthesized metal-free, D-π-A type, carbazole dye (SK1) sensitizer-based photovoltaic device with a power conversion efficiency (PCE) of more than 5% have been demonstrated by employing the cobalt tris(2,2'-bipyridyl) redox shuttle. A short-circuit current density (Jsc) of ∼12.0 mA/cm(2), an open-circuit voltage (Voc) of ∼719 mV, and a fill factor (FF) of ∼65% have been afforded by the 1D ZnO NW-based dye-sensitized solar cell (DSSC) incorporating [Co(bpy)3](3+/2+) complex as the one-electron redox mediator. In contrast, the identical DSSC with traditional I3(-)/I(-) electrolyte has shown a Jsc ≈ 12.2 mA/cm(2), a Voc ≈ 629 mV, and a FF ≈ 62%, yielding a PCE of ∼4.7%. The persuasive role of the inherent superior electron transport property of 1D ZnO NWs in enhancing the device efficiency is evidenced from the impoverished performance of the DSSCs with photoanodes fabricated using ZnO nanoparticles (NPs). The DSSCs having ZnO NP-based photoanodes have achieved the PCEs of ∼3.6% and ∼3.2% using cobalt- and iodine-based redox electrolytes, respectively. The electronic interactions between the SK1 sensitizer and ZnO (NWs and NPs) to induce the photogenerated charge transfer from SK1 to the conduction band (CB) of ZnO are evidenced from the significant quenching of photoluminescence and exciton lifetime decay of SK1, when it is anchored onto the ZnO architectures. The energetics of the SK1 dye molecule are estimated by combining the spectroscopic and electrochemical techniques. The electronic distributions of SK1 dye molecule in its HOMO and LUMO energy levels are interpreted using density functional theory (DFT)-based calculations. The electron donor-π linker-acceptor (D-π-A) configuration of SK1 dye provides an intramolecular charge transfer within the molecule, prompting the electron migration from the carbazole donor to cyanoacrylic acceptor moiety via the oligo

  12. Hybrid core-shell nanowire electrodes utilizing vertically aligned carbon nanofiber arrays for high-performance energy storage

    NASA Astrophysics Data System (ADS)

    Klankowski, Steven Arnold

    Nanostructured electrode materials for electrochemical energy storage systems have been shown to improve both rate performance and capacity retention, while allowing considerably longer cycling lifetime. The nano-architectures provide enhanced kinetics by means of larger surface area, higher porosity, better material interconnectivity, shorter diffusion lengths, and overall mechanical stability. Meanwhile, active materials that once were excluded from use due to bulk property issues are now being examined in new nanoarchitecture. Silicon was such a material, desired for its large lithium-ion storage capacity of 4,200 mAh g-1 and low redox potential of 0.4 V vs. Li/Li+; however, a ˜300% volume expansion and increased resistivity upon lithiation limited its broader applications. In the first study, the silicon-coated vertically aligned carbon nanofiber (VACNF) array presents a unique core-shell nanowire (NW) architecture that demonstrates both good capacity and high rate performance. In follow-up, the Si-VACNFs NW electrode demonstrates enhanced power rate capabilities as it shows excellent storage capacity at high rates, attributed to the unique nanoneedle structure that high vacuum sputtering produces on the three-dimensional array. Following silicon's success, titanium dioxide has been explored as an alternative high-rate electrode material by utilizing the dual storage mechanisms of Li+ insertion and pseudocapacitance. The TiO 2-coated VACNFs shows improved electrochemical activity that delivers near theoretical capacity at larger currents due to shorter Li+ diffusion lengths and highly effective electron transport. A unique cell is formed with the Si-coated and TiO2-coated electrodes place counter to one another, creating the hybrid of lithium ion battery-pseudocapacitor that demonstrated both high power and high energy densities. The hybrid cell operates like a battery at lower current rates, achieving larger discharge capacity, while retaining one-third of

  13. Synthesis and field emission properties of different ZnO nanostructure arrays

    PubMed Central

    2012-01-01

    In this article, zinc oxide (ZnO) nanostructures of different shapes were fabricated on silicon substrate. Well-aligned and long ZnO nanowire (NW) arrays, as well as leaf-like ZnO nanostructures (which consist of modulated and single-phase structures), were fabricated by a chemical vapor deposition (CVD) method without the assistance of a catalyst. On the other hand, needle-like ZnO NW arrays were first fabricated with the CVD process followed by chemical etching of the NW arrays. The use of chemical etching provides a low-cost and convenient method of obtaining the needle-like arrays. In addition, the field emission properties of the different ZnO NW arrays were also investigated where some differences in the turn-on field and the field-enhancement factors were observed for the ZnO nanostructures of different lengths and shapes. It was experimentally observed that the leaf-like ZnO nanostructure is most suitable for field emission due to its lowest turn-on and threshold field as well as its high field-enhancement factor among the different synthesized nanostructures. PMID:22444723

  14. Facile fabrication of hierarchical ZnO nanowire aggregates using rose-like peroxide precursor as the inorganic template

    NASA Astrophysics Data System (ADS)

    Gu, Yan; Yan, Fengwen; Guo, Cun-Yue; Yuan, Guoqing

    2016-08-01

    The complex rose-like inorganic templates assembled by the ZnO/ZnO2 hybrid nanosheets have been constructed with hydrogen peroxide as an additive to control the structure of a precursor. The surface morphologies of the inorganic templates can be controlled by varying the reaction time and the amount of hydrogen peroxide. The process of the precursor growth takes a dissolution-growth route under hydrothermal conditions. The chemical composition of the precursor is determined by X-ray diffraction (XRD) and Raman analyses, indicating the existence of peroxide in the precursor. Combined with transmission electron microscopy (TEM) data, the ZnO/ZnO2 hybrid precursor is proposed to act as an inorganic template for the growth of secondary crystal structures. The dandelion-like ZnO crystal is fabricated by using rose-like peroxide precursor as the inorganic template. The structural evolution of hierarchical ZnO crystal is studied by monitoring the influence of the reaction time.

  15. All-printable band-edge modulated ZnO nanowire photodetectors with ultra-high detectivity.

    PubMed

    Liu, Xi; Gu, Leilei; Zhang, Qianpeng; Wu, Jiyuan; Long, Yunze; Fan, Zhiyong

    2014-06-05

    High-performance photodetectors are critical for high-speed optical communication and environmental sensing, and flexible photodetectors can be used for a wide range of portable or wearable applications. Here we demonstrate the all-printable fabrication of polycrystalline nanowire-based high-performance photodetectors on flexible substrates. Systematic investigations have shown their ultra-high photoconductive gain, responsivity and detectivity up to 3.3 × 10(17) Jones. Further analysis shows that their high performance originates from the unique band-edge modulation along the nanowire axial direction, where the existence of Schottky barriers in series leads to highly suppressed dark current of the device and also gives rise to fast photoelectric response to low-intensity optical signal owing to barrier height modulation. The discovered rationale in this work can be utilized as guideline to design high-performance photodetectors with other nanomaterial systems. The developed fabrication scheme opens up possibility for future flexible and high-performance integrated optoelectronic sensor circuitry.

  16. All-printable band-edge modulated ZnO nanowire photodetectors with ultra-high detectivity

    PubMed Central

    Liu, Xi; Gu, Leilei; Zhang, Qianpeng; Wu, Jiyuan; Long, Yunze; Fan, Zhiyong

    2014-01-01

    High-performance photodetectors are critical for high-speed optical communication and environmental sensing, and flexible photodetectors can be used for a wide range of portable or wearable applications. Here we demonstrate the all-printable fabrication of polycrystalline nanowire-based high-performance photodetectors on flexible substrates. Systematic investigations have shown their ultra-high photoconductive gain, responsivity and detectivity up to 3.3 × 1017 Jones. Further analysis shows that their high performance originates from the unique band-edge modulation along the nanowire axial direction, where the existence of Schottky barriers in series leads to highly suppressed dark current of the device and also gives rise to fast photoelectric response to low-intensity optical signal owing to barrier height modulation. The discovered rationale in this work can be utilized as guideline to design high-performance photodetectors with other nanomaterial systems. The developed fabrication scheme opens up possibility for future flexible and high-performance integrated optoelectronic sensor circuitry. PMID:24898081

  17. Low-Temperature Growth of Well-Aligned ZnO Nanorod Arrays by Chemical Bath Deposition for Schottky Diode Application

    NASA Astrophysics Data System (ADS)

    Yuan, Zhaolin

    2015-04-01

    A well-aligned ZnO nanorod array (ZNRA) was successfully grown on an indium tin oxide (ITO) substrate by chemical bath deposition at low temperature. The morphology, crystalline structure, transmittance spectrum and photoluminescence spectrum of as-grown ZNRA were investigated by field emission scanning electron microscopy, x-ray diffraction, ultraviolet-visible spectroscopy and spectrophotometer, respectively. The results of these measurements showed that the ZNRA contained densely packed, aligned nanorods with diameters from 30 nm to 40 nm and a wurtzite structure. The ZNRA exhibited good optical transparency within the visible spectral range, with >80% transmission. Gold (Au) was deposited on top of the ZNRA, and the current-voltage characteristics of the resulting ITO/ZNRA/Au device in the dark were evaluated in detail. The ITO/ZNRA/Au device acted as a Schottky barrier diode with rectifying behaviour, low turn-on voltage (0.6 V), small reverse-bias saturation current (3.73 × 10-6 A), a high ideality factor (3.75), and a reasonable barrier height (0.65 V) between the ZNRA and Au.

  18. Controlled growth of semiconducting nanowire, nanowall, and hybrid nanostructures on graphene for piezoelectric nanogenerators.

    PubMed

    Kumar, Brijesh; Lee, Keun Young; Park, Hyun-Kyu; Chae, Seung Jin; Lee, Young Hee; Kim, Sang-Woo

    2011-05-24

    Precise control of morphologies of one- or two-dimensional nanostructures during growth has not been easy, usually degrading device performance and therefore limiting applications to various advanced nanoscale electronics and optoelectronics. Graphene could be a platform to serve as a substrate for both morphology control and direct use of electrodes due to its ideal monolayer flatness with π electrons. Here, we report that, by using graphene directly as a substrate, vertically well-aligned zinc oxide (ZnO) nanowires and nanowalls were obtained systematically by controlling gold (Au) catalyst thickness and growth time without inflicting significant thermal damage on the graphene layer during thermal chemical vapor deposition of ZnO at high temperature of about 900 °C. We clarify Au nanoparticle positions at graphene-ZnO heterojunctions that are very important in realizing advanced nanoscale electronic and optoelectronic applications of such nanostructures. Further, we demonstrate a piezoelectric nanogenerator that was fabricated from the vertically aligned nanowire-nanowall ZnO hybrid/graphene structure generates a new type of direct current through the specific electron dynamics in the nanowire-nanowall hybrid. PMID:21495657

  19. Type I band alignment in GaAs{sub 81}Sb{sub 19}/GaAs core-shell nanowires

    SciTech Connect

    Xu, T.; Wei, M. J.; Capiod, P.; Díaz Álvarez, A.; Han, X. L.; Troadec, D.; Nys, J. P.; Berthe, M.; Lefebvre, I.; Grandidier, B.; Patriarche, G.; Plissard, S. R.; Caroff, P.; and others

    2015-09-14

    The composition and band gap of the shell that formed during the growth of axial GaAs/GaAs{sub 81}Sb{sub 19}/ GaAs heterostructure nanowires have been investigated by transmission electron microscopy combined with energy dispersion spectroscopy, scanning tunneling spectroscopy, and density functional theory calculations. On the GaAs{sub 81}Sb{sub 19} intermediate segment, the shell is found to be free of Sb (pure GaAs shell) and transparent to the tunneling electrons, despite the (110) biaxial strain that affects its band gap. As a result, a direct measurement of the core band gap allows the quantitative determination of the band offset between the GaAs{sub 81}Sb{sub 19} core and the GaAs shell and identifies it as a type I band alignment.

  20. Strain analysis of nanowire interfaces in multiscale composites

    NASA Astrophysics Data System (ADS)

    Malakooti, Mohammad H.; Zhou, Zhi; Spears, John H.; Shankwitz, Timothy J.; Sodano, Henry A.

    2016-04-01

    Recently, the reinforcement-matrix interface of fiber reinforced polymers has been modified through grafting nanostructures - particularly carbon nanotubes and ZnO nanowires - on to the fiber surface. This type of interface engineering has made a great impact on the development of multiscale composites that have high stiffness, interfacial strength, toughness, and vibrational damping - qualities that are mutually exclusive to a degree in most raw materials. Although the efficacy of such nanostructured interfaces has been established, the reinforcement mechanisms of these multiscale composites have not been explored. Here, strain transfer across a nanowire interphase is studied in order to gain a heightened understanding of the working principles of physical interface modification and the formation of a functional gradient. This problem is studied using a functionally graded piezoelectric interface composed of vertically aligned lead zirconate titanate nanowires, as their piezoelectric properties can be utilized to precisely control the strain on one side of the interface. The displacement and strain across the nanowire interface is captured using digital image correlation. It is demonstrated that the material gradient created through nanowires cause a smooth strain transfer from reinforcement phase into matrix phase that eliminates the stress concentration between these phases, which have highly mismatched elasticity.

  1. Electron field emission enhancement of vertically aligned ultrananocrystalline diamond-coated ZnO core-shell heterostructured nanorods.

    PubMed

    Sankaran, Kamatchi Jothiramalingam; Afsal, Manekkathodi; Lou, Shiu-Cheng; Chen, Huang-Chin; Chen, Chulung; Lee, Chi-Young; Chen, Lih-Juann; Tai, Nyan-Hwa; Lin, I-Nan

    2014-01-15

    Enhanced electron field emission (EFE) behavior of a core-shell heterostructure, where ZnO nanorods (ZNRs) form the core and ultrananocrystalline diamond needles (UNCDNs) form the shell, is reported. EFE properties of ZNR-UNCDN core-shell heterostructures show a high emission current density of 5.5 mA cm(-2) at an applied field of 4.25 V μm(-1) , and a low turn-on field of 2.08 V μm(-1) compared to the 1.67 mA cm(-2) emission current density (at an applied field of 28.7 V μm(-1) ) and 16.6 V μm(-1) turn-on field for bare ZNRs. Such an enhancement in the field emission originates from the unique materials combination, resulting in good electron transport from ZNRs to UNCDNs and efficient field emission of electrons from the UNCDNs. The potential application of these materials is demonstrated by the plasma illumination measurements that lowering the threshold voltage by 160 V confirms the role of ZNR-UNCDN core-shell heterostructures in the enhancement of electron emission.

  2. Enhancing Photoresponsivity of Self-Aligned MoS2 Field-Effect Transistors by Piezo-Phototronic Effect from GaN Nanowires.

    PubMed

    Liu, Xingqiang; Yang, Xiaonian; Gao, Guoyun; Yang, Zhenyu; Liu, Haitao; Li, Qiang; Lou, Zheng; Shen, Guozhen; Liao, Lei; Pan, Caofeng; Lin Wang, Zhong

    2016-08-23

    We report high-performance self-aligned MoS2 field-effect transistors (FETs) with enhanced photoresponsivity by the piezo-phototronic effect. The FETs are fabricated based on monolayer MoS2 with a piezoelectric GaN nanowire (NW) as the local gate, and a self-aligned process is employed to define the source/drain electrodes. The fabrication method allows the preservation of the intrinsic property of MoS2 and suppresses the scattering center density in the MoS2/GaN interface, which results in high electrical and photoelectric performances. MoS2 FETs with channel lengths of ∼200 nm have been fabricated with a small subthreshold slope of 64 mV/dec. The photoresponsivity is 443.3 A·W(-1), with a fast response and recovery time of ∼5 ms under 550 nm light illumination. When strain is introduced into the GaN NW, the photoresponsivity is further enhanced to 734.5 A·W(-1) and maintains consistent response and recovery time, which is comparable with that of the mechanical exfoliation of MoS2 transistors. The approach presented here opens an avenue to high-performance top-gated piezo-enhanced MoS2 photodetectors.

  3. Enhancing Photoresponsivity of Self-Aligned MoS2 Field-Effect Transistors by Piezo-Phototronic Effect from GaN Nanowires.

    PubMed

    Liu, Xingqiang; Yang, Xiaonian; Gao, Guoyun; Yang, Zhenyu; Liu, Haitao; Li, Qiang; Lou, Zheng; Shen, Guozhen; Liao, Lei; Pan, Caofeng; Lin Wang, Zhong

    2016-08-23

    We report high-performance self-aligned MoS2 field-effect transistors (FETs) with enhanced photoresponsivity by the piezo-phototronic effect. The FETs are fabricated based on monolayer MoS2 with a piezoelectric GaN nanowire (NW) as the local gate, and a self-aligned process is employed to define the source/drain electrodes. The fabrication method allows the preservation of the intrinsic property of MoS2 and suppresses the scattering center density in the MoS2/GaN interface, which results in high electrical and photoelectric performances. MoS2 FETs with channel lengths of ∼200 nm have been fabricated with a small subthreshold slope of 64 mV/dec. The photoresponsivity is 443.3 A·W(-1), with a fast response and recovery time of ∼5 ms under 550 nm light illumination. When strain is introduced into the GaN NW, the photoresponsivity is further enhanced to 734.5 A·W(-1) and maintains consistent response and recovery time, which is comparable with that of the mechanical exfoliation of MoS2 transistors. The approach presented here opens an avenue to high-performance top-gated piezo-enhanced MoS2 photodetectors. PMID:27447946

  4. The synthesis and electrical characterization of Cu2O/Al:ZnO radial p-n junction nanowire arrays.

    PubMed

    Kuo, Chien-Lin; Wang, Ruey-Chi; Huang, Jow-Lay; Liu, Chuan-Pu; Wang, Chun-Kai; Chang, Sheng-Po; Chu, Wen-Huei; Wang, Chao-Hung; Tu, Chia-Hao

    2009-09-01

    Vertically aligned large-area p-Cu(2)O/n-AZO (Al-doped ZnO) radial heterojunction nanowire arrays were synthesized on silicon without using catalysts in thermal chemical vapor deposition followed by e-beam evaporation. Scanning electron microscopy and high-resolution transmission electron microscopy results show that poly-crystalline Cu(2)O nano-shells with thicknesses around 10 nm conformably formed on the entire periphery of pre-grown Al:ZnO single-crystalline nanowires. The Al doping concentration in the Al:ZnO nanowires with diameters around 50 nm were determined to be around 1.19 at.% by electron energy loss spectroscopy. Room-temperature photoluminescence spectra show that the broad green bands of pristine ZnO nanowires were eliminated by capping with Cu(2)O nano-shells. The current-voltage (I-V) measurements show that the p-Cu(2)O/n-AZO nanodiodes have well-defined current rectifying behavior. This paper provides a simple method to fabricate superior p-n radial nanowire arrays for developing nano-pixel optoelectronic devices and solar cells.

  5. The synthesis and electrical characterization of Cu2O/Al:ZnO radial p-n junction nanowire arrays.

    PubMed

    Kuo, Chien-Lin; Wang, Ruey-Chi; Huang, Jow-Lay; Liu, Chuan-Pu; Wang, Chun-Kai; Chang, Sheng-Po; Chu, Wen-Huei; Wang, Chao-Hung; Tu, Chia-Hao

    2009-09-01

    Vertically aligned large-area p-Cu(2)O/n-AZO (Al-doped ZnO) radial heterojunction nanowire arrays were synthesized on silicon without using catalysts in thermal chemical vapor deposition followed by e-beam evaporation. Scanning electron microscopy and high-resolution transmission electron microscopy results show that poly-crystalline Cu(2)O nano-shells with thicknesses around 10 nm conformably formed on the entire periphery of pre-grown Al:ZnO single-crystalline nanowires. The Al doping concentration in the Al:ZnO nanowires with diameters around 50 nm were determined to be around 1.19 at.% by electron energy loss spectroscopy. Room-temperature photoluminescence spectra show that the broad green bands of pristine ZnO nanowires were eliminated by capping with Cu(2)O nano-shells. The current-voltage (I-V) measurements show that the p-Cu(2)O/n-AZO nanodiodes have well-defined current rectifying behavior. This paper provides a simple method to fabricate superior p-n radial nanowire arrays for developing nano-pixel optoelectronic devices and solar cells. PMID:19687549

  6. Vertical zinc oxide nanowires embedded in self-assembled photonic crystal

    NASA Astrophysics Data System (ADS)

    Mastro, Michael A.; Mazeina, Lena; Kim, Byung-Jae; Prokes, Sharka M.; Hite, Jennifer; Eddy, Charles R.; Kim, Jihyun

    2011-02-01

    A dense array of vertical ZnO nanowires was grown on an Al 0.3Ga 0.7N/AlN distributed Bragg reflector. The ZnO nanowires were embedded in a photonic crystal formed by self-assembly of SiO 2 nanospheres into a close-packed fcc structure. The photonic crystal modified the spontaneous emission spectrum of the ZnO nanowires. A calculation confirmed that a close spacing in the ZnO nanowires will lead to coupling in the wire-to-wire electromagnetic fields.

  7. Self-Aligned Cu-Si Core-Shell Nanowire Array as a High-Performance Anode for Li-Ion Batteries

    SciTech Connect

    Qu, Jun; Li, Huaqing; Henry Jr, John James; Martha, Surendra K; Dudney, Nancy J; Lance, Michael J; Mahurin, Shannon Mark; Besmann, Theodore M; Dai, Sheng

    2012-01-01

    Silicon nanowires (NWs) have been reported as a promising anode that demonstrated high capacity without pulverization during cycling, however, they present some technical issues that remain to be solved. The high aspect ratio of the NWs and their small contact areas with the current collector cause high electrical resistance, which results in inefficient electron transport. The nano-size interface between a NW and the substrate experiences high shear stress during lithiation, causing the wire to separate from the current collector. In addition, most reported methods for producing silicon NWs involve high-temperature processing and require catalysts that later become contaminants. This study developed a new self-aligned Cu-Si core-shell NW array using a low-temperature, catalyst-free process to address the issues described. The silicon shell is amorphous as synthesized and accommodates Li-ions without phase transformation. The copper core functions as a built-in current collector to provide very short (nm) electron transport pathways as well as backbone to improve mechanical strength. Initial electrochemical evaluation has demonstrated good capacity retention and high Coulombic efficiency for this new anode material in a half-cell configuration. No wire fracture or core-shell separation was observed after cycling. However, electrolyte decomposition products largely covered the top surface of the NW array, restricting electrolyte access and causing capacity reduction at high charging rates.

  8. Vertically aligned InGaN nanowires with engineered axial In composition for highly efficient visible light emission

    NASA Astrophysics Data System (ADS)

    Ebaid, Mohamed; Kang, Jin-Ho; Yoo, Yang-Seok; Lim, Seung-Hyuk; Cho, Yong-Hoon; Ryu, Sang-Wan

    2015-11-01

    We report on the fabrication of novel InGaN nanowires (NWs) with improved crystalline quality and high radiative efficiency for applications as nanoscale visible light emitters. Pristine InGaN NWs grown under a uniform In/Ga molar flow ratio (UIF) exhibited multi-peak white-like emission and a high density of dislocation-like defects. A phase separation and broad emission with non-uniform luminescent clusters were also observed for a single UIF NW investigated by spatially resolved cathodoluminescence. Hence, we proposed a simple approach based on engineering the axial In content by increasing the In/Ga molar flow ratio at the end of NW growth. This new approach yielded samples with a high luminescence intensity, a narrow emission spectrum, and enhanced crystalline quality. Using time-resolved photoluminescence spectroscopy, the UIF NWs exhibited a long radiative recombination time (τr) and low internal quantum efficiency (IQE) due to strong exciton localization and carrier trapping in defect states. In contrast, NWs with engineered In content demonstrated three times higher IQE and a much shorter τr due to mitigated In fluctuation and improved crystal quality.

  9. Solution processed semiconductor alloy nanowire arrays for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Shimpi, Paresh R.

    In this dissertation, we use ZnO nanowire as a model system to investigate the potential of solution routes for bandgap engineering in semiconductor nanowires. Excitingly, successful Mg-alloying into ZnO nanowire arrays has been achieved using a two-step sequential hydrothermal method at low temperature (<155°C) without using post-annealing process. Evidently, both room temperature and 40 K photoluminescence (PL) spectroscopy revealed enhanced and blue-shifted near-band-edge ultraviolet (NBE UV) emission in the Mg-alloyed ZnO (ZnMgO) nanowire arrays, compared with ZnO nanowires. The specific template of densely packed ZnO nanowires is found to be instrumental in achieving the Mg alloying in low temperature solution process. By optimizing the density of ZnO nanowires and precursor concentration, 8-10 at.% of Mg content has been achieved in ZnMgO nanowires. Post-annealing treatment is conducted in oxygen-rich and oxygen-deficient environment at different temperatures and time durations on silicon and quartz substrates in order to study the structural and optical property evolution in ZnMgO nanowire arrays. Vacuum annealed ZnMgO nanowires on both substrates retained their hexagonal structures and PL results showed the enhanced but red-shifted NBE UV emission compared to ZnO nanowires with visible emission nearly suppressed, suggesting the reduced defects concentration and improvement in crystallinity of the nanowires. On the contrast, for ambient annealed ZnMgO nanowires on silicon substrate, as the annealing temperature increased from 400°C to 900°C, intensity of visible emission peak across blue-green-yellow-red band (˜400-660 nm) increased whereas intensity of NBE UV peak decreased and completely got quenched. This might be due to interface diffusion of oxidized Si (SiOx) and formation of (Zn,Mg)1.7SiO4 epitaxially overcoated around individual ZnMgO nanowire. On the other hand, ambient annealed ZnMgO nanowires grown on quartz showed a ˜6-10 nm blue-shift in

  10. LED-controlled tuning of ZnO nanowires’ wettability for biosensing applications

    PubMed Central

    Bhavsar, Kaushalkumar; Ross, Duncan; Prabhu, Radhakrishna; Pollard, Pat

    2015-01-01

    Background Wettability is an important property of solid materials which can be controlled by surface energy. Dynamic control over the surface wettability is of great importance for biosensing applications. Zinc oxide (ZnO) is a biocompatible material suitable for biosensors and microfluidic devices. Nanowires of ZnO tend to show a hydrophobic nature which decelerates the adhesion or adsorption of biomolecules on the surface and, therefore, limits their application. Methods Surface wettability of the ZnO nanowires can be tuned using light irradiation. However, the control over wettability using light-emitting diodes (LEDs) and the role of wavelength in controlling the wettability of ZnO nanowires are unclear. This is the first report on LED-based wettability control of nanowires, and it includes investigations on tuning the desired wettability of ZnO nanowires using LEDs as a controlling tool. Results The investigations on spectral properties of the LED emission on ZnO nanowires’ wettability have shown strong dependency on the spectral overlap of LED emission on ZnO absorption spectra. Results indicate that LEDs offer an advanced control on dynamically tuning the wettability of ZnO nanowires. Conclusion The spectral investigations have provided significant insight into the role of irradiating wavelength of light and irradiation time on the surface wettability of ZnO nanowires. This process is suitable to realize on chip based integrated sensors and has huge potential for eco-friendly biosensing and environmental sensing applications. PMID:25855065

  11. High Piezo-photocatalytic Efficiency of CuS/ZnO Nanowires Using Both Solar and Mechanical Energy for Degrading Organic Dye.

    PubMed

    Hong, Deyi; Zang, Weili; Guo, Xiao; Fu, Yongming; He, Haoxuan; Sun, Jing; Xing, Lili; Liu, Baodan; Xue, Xinyu

    2016-08-24

    High piezo-photocatalytic efficiency of degrading organic pollutants has been realized from CuS/ZnO nanowires using both solar and mechanical energy. CuS/ZnO heterostructured nanowire arrays are compactly/vertically aligned on stainless steel mesh by a simple two-step wet-chemical method. The mesh-supported nanocomposites can facilitate an efficient light harvesting due to the large surface area and can also be easily removed from the treated solution. Under both solar and ultrasonic irradiation, CuS/ZnO nanowires can rapidly degrade methylene blue (MB) in aqueous solution, and the recyclability is investigated. In this process, the ultrasonic assistance can greatly enhance the photocatalytic activity. Such a performance can be attributed to the coupling of the built-in electric field of heterostructures and the piezoelectric field of ZnO nanowires. The built-in electric field of the heterostructure can effectively separate the photogenerated electrons/holes and facilitate the carrier transportation. The CuS component can improve the visible light utilization. The piezoelectric field created by ZnO nanowires can further separate the photogenerated electrons/holes through driving them to migrate along opposite directions. The present results demonstrate a new water-pollution solution in green technologies for the environmental remediation at the industrial level.

  12. High Piezo-photocatalytic Efficiency of CuS/ZnO Nanowires Using Both Solar and Mechanical Energy for Degrading Organic Dye.

    PubMed

    Hong, Deyi; Zang, Weili; Guo, Xiao; Fu, Yongming; He, Haoxuan; Sun, Jing; Xing, Lili; Liu, Baodan; Xue, Xinyu

    2016-08-24

    High piezo-photocatalytic efficiency of degrading organic pollutants has been realized from CuS/ZnO nanowires using both solar and mechanical energy. CuS/ZnO heterostructured nanowire arrays are compactly/vertically aligned on stainless steel mesh by a simple two-step wet-chemical method. The mesh-supported nanocomposites can facilitate an efficient light harvesting due to the large surface area and can also be easily removed from the treated solution. Under both solar and ultrasonic irradiation, CuS/ZnO nanowires can rapidly degrade methylene blue (MB) in aqueous solution, and the recyclability is investigated. In this process, the ultrasonic assistance can greatly enhance the photocatalytic activity. Such a performance can be attributed to the coupling of the built-in electric field of heterostructures and the piezoelectric field of ZnO nanowires. The built-in electric field of the heterostructure can effectively separate the photogenerated electrons/holes and facilitate the carrier transportation. The CuS component can improve the visible light utilization. The piezoelectric field created by ZnO nanowires can further separate the photogenerated electrons/holes through driving them to migrate along opposite directions. The present results demonstrate a new water-pollution solution in green technologies for the environmental remediation at the industrial level. PMID:27494426

  13. Controlled Synthesis and Understanding of Growth Mechanism – Parameters for Atmospheric Pressure Hydrothermal Synthesis of Ultrathin Secondary ZnO Nanowires

    DOE PAGES

    Jiao, Mingzhi; Nguyen, Duc; Nguyen, Van; Nguyen, Van; Hjort, Klas; Nguyen, Hugo

    2015-11-10

    We measured luminescence and scintillation in ZnO single crystals by photoluminescence and X-ray-induced luminescence (XRIL). XRIL allowed a direct comparison to be made between the near-band emission (NBE) and trap emissions providing insight into the carrier recombination efficiency in the ZnO crystals. In the origin of green emission, the dominant trap emission in ZnO, was investigated by gamma-induced positron spectroscopy (GIPS) - a unique defect spectroscopy method that enables positron lifetime measurements to be made for a sample without contributions from positron annihilation in the source materials or the surroundings. Moreover, the measurements showed the absence of positron traps inmore » the crystals and yielded a bulk positron lifetime value that is in complete agreement with the predicted theoretical value = thereby confirming the advantage of the GIPS method. By combining scintillation measurements with XRIL, the fast scintillation in ZnO crystals was found to be strongly correlated with the ratio between the defect luminescence and NBE.« less

  14. Controlled Synthesis and Understanding of Growth Mechanism – Parameters for Atmospheric Pressure Hydrothermal Synthesis of Ultrathin Secondary ZnO Nanowires

    SciTech Connect

    Jiao, Mingzhi; Nguyen, Duc; Nguyen, Van; Nguyen, Van; Hjort, Klas; Nguyen, Hugo

    2015-11-10

    We measured luminescence and scintillation in ZnO single crystals by photoluminescence and X-ray-induced luminescence (XRIL). XRIL allowed a direct comparison to be made between the near-band emission (NBE) and trap emissions providing insight into the carrier recombination efficiency in the ZnO crystals. In the origin of green emission, the dominant trap emission in ZnO, was investigated by gamma-induced positron spectroscopy (GIPS) - a unique defect spectroscopy method that enables positron lifetime measurements to be made for a sample without contributions from positron annihilation in the source materials or the surroundings. Moreover, the measurements showed the absence of positron traps in the crystals and yielded a bulk positron lifetime value that is in complete agreement with the predicted theoretical value = thereby confirming the advantage of the GIPS method. By combining scintillation measurements with XRIL, the fast scintillation in ZnO crystals was found to be strongly correlated with the ratio between the defect luminescence and NBE.

  15. Studies on the structural and optical properties of zinc oxide nanobushes and Co-doped ZnO self-aggregated nanorods synthesized by simple thermal decomposition route

    SciTech Connect

    Freedsman, Joseph J.; Kennedy, L. John; Kumar, R. Thinesh; Sekaran, G.; Vijaya, J. Judith

    2010-10-15

    Pure and Co-doped zinc oxide nanomaterials were prepared by a simple low temperature synthesis and were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), high resolution-transmission electron microscopy (HR-TEM), diffused reflectance spectroscopy (DRS) and electron paramagnetic resonance (EPR) techniques. The results showed the formation of nanobushes that consists of several nanowires for pure ZnO and the nanorods formed by self-aggregation for Co-doped ZnO. The presence of Co{sup 2+} ions replacing some of the Zn{sup 2+} in the ZnO lattice was confirmed by EPR and DRS studies. The mechanism for the formation of self-aggregated and self-aligned ZnO rods after the incorporation of cobalt in the lattice by the building block units is discussed in this study. Morphological studies were carried out using SEM and HR-TEM, which supports the validity of the proposed mechanism for the formation of ZnO nanobushes and Co-doped ZnO nanorods. The synthesized nanomaterials were found to have good optoelectronic properties.

  16. Development of palladium nanowires

    NASA Astrophysics Data System (ADS)

    Cheng, Chuanding

    Inherent limitations of traditional lithography have prompted the search for means of achieving self-assembly of nano-scale structures and networks for the next generation of electronic and photonic devices. The nanowire, the basic building block of a nanocircuit, has recently become the focus of intense research. Reports on nanowire synthesis and assembly have appeared in the scientific literature, which include Vapor-Liquid-Solid mechanism, template-based electrochemical fabrication, solvothermal or wet chemistry, and assembly by fluid alignment or microchannel networks. An ideal approach for practical application of nanowires would circumvent technical and economic constraints of templating. Here we report on the self-assembly of highly-ordered metallic nanowires directly from a palladium acetate solution under an applied alternating current (AC) electric field of relatively high intensity and frequency. DNA-templated nanowires are first presented here. DNA molecules were stretched and positioned by electric field, followed by metallization by palladium acetate solution. Palladium nanowire arrays have been found to grow directly between microelectrodes without any template, under an alternating electric field of relatively high intensity and frequency. The wires grew spontaneously along the direction of the electric field and have high uniformity and conductivity. Single 75 nm-diameter palladium nanowires have also been self-assembled from aqueous solution at predefined locations between 15 mum-gap electrodes built on a SiO2 substrate. Nanowire assembly was initiated by application an electric field, and it occurred only along the direction of field lines where the field is strongest. Related metals did not support single nanowire assembly under comparable conditions. Current-limiting circuits for controlled nanowire synthesis, electric field simulation, and growth mechanism were studied. The simple and straightforward approach to nanowire assembly outlined here

  17. Surfactant-Templated Mesoporous Metal Oxide Nanowires

    DOE PAGES

    Luo, Hongmei; Lin, Qianglu; Baber, Stacy; Naalla, Mahesh

    2010-01-01

    We demore » monstrate two approaches to prepare mesoporous metal oxide nanowires by surfactant assembly and nanoconfinement via sol-gel or electrochemical deposition. For example, mesoporous Ta 2 O 5 and zeolite nanowires are prepared by block copolymer Pluronic 123-templated sol-gel method, and mesoporous ZnO nanowires are prepared by electrodeposition in presence of anionic surfactant sodium dodecyl sulfate (SDS) surfactant, in porous membranes. The morphologies of porous nanowires are studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) analyses.« less

  18. Facilitating ZnO nanostructure growths by making seeds for self-catalytic reactions

    SciTech Connect

    Yin Liang; Yu, Choongho

    2012-03-15

    Long and straight single-crystalline ZnO nanowires were successfully synthesized on ZnCl{sub 2}-coated Zn foils in oxygen environment by using simple thermal annealing processes. With relatively low reaction temperatures (410 and 700 Degree-Sign C), nanowires whose lengths and diameters are up to {approx}50 {mu}m and 10-100 nm were obtained. We found that ZnO seeds created from ZnCl{sub 2} played an important role in facilitating the ZnO nanowire growth via self-catalytic reactions. Systematic studies by altering critical synthesis factors that determine shape, length, diameter, and density of the nanowires were performed in order to unveil the growth mechanisms. We also compared the nanowires synthesized from Zn foils with tetrapod ZnO nanostructures synthesized from Zn powders at various temperatures. - Graphical abstract: (Left panel) ZnO seeds from ZnCl{sub 2} after thermal annealing at 500 Degree-Sign C for 5 min, (right panel) dense ZnO nanowires grown from Zn foils with ZnCl{sub 2} coating after thermal annealing at 700 Degree-Sign C for 60 min. Highlights: Black-Right-Pointing-Pointer ZnCl{sub 2} facilitated ZnO nanowire growth by creating ZnO seeds. Black-Right-Pointing-Pointer ZnO nanowires were synthesized via self-catalytic reactions. Black-Right-Pointing-Pointer Long and straight single-crystalline ZnO nanowires were synthesized. Black-Right-Pointing-Pointer Key parameters in thermal annealing processes were identified.

  19. Electrochemically Grown Single Nanowire Sensors

    NASA Technical Reports Server (NTRS)

    Yun, Minhee; Lee, Choonsup; Vasquez, Richard P.; Penner, Reginald; Bangar, Mangesh; Mulchandani, Ashok; Myung, Nosang V.

    2004-01-01

    We report a fabrication technique that is potentially capable of producing arrays of individually addressable nanowire sensors with controlled dimensions, positions, alignments, and chemical compositions. The concept has been demonstrated with electrodeposition of palladium wires with 75 nm to 350 nm widths. We have also fabricated single and double conducting polymer nanowires (polyaniline and polypyrrole) with 100nm and 200nm widths using electrochemical direct growth. Using single Pd nanowires, we have also demonstrated hydrogen sensing. It is envisioned that these are the first steps towards nanowire sensor arrays capable of simultaneously detecting multiple chemical species.

  20. Structure-dependent mechanical properties of ultrathin zinc oxide nanowires

    PubMed Central

    2011-01-01

    Mechanical properties of ultrathin zinc oxide (ZnO) nanowires of about 0.7-1.1 nm width and in the unbuckled wurtzite (WZ) phase have been carried out by molecular dynamics simulation. As the width of the nanowire decreases, Young's modulus, stress-strain behavior, and yielding stress all increase. In addition, the yielding strength and Young's modulus of Type III are much lower than the other two types, because Type I and II have prominent edges on the cross-section of the nanowire. Due to the flexibility of the Zn-O bond, the phase transformation from an unbuckled WZ phase to a buckled WZ is observed under the tensile process, and this behavior is reversible. Moreover, one- and two-atom-wide chains can be observed before the ZnO nanowires rupture. These results indicate that the ultrathin nanowire possesses very high malleability. PMID:21711876