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Sample records for aligned zno nanowires

  1. Permanent bending and alignment of ZnO nanowires.

    PubMed

    Borschel, Christian; Spindler, Susann; Lerose, Damiana; Bochmann, Arne; Christiansen, Silke H; Nietzsche, Sandor; Oertel, Michael; Ronning, Carsten

    2011-05-06

    Ion beams can be used to permanently bend and re-align nanowires after growth. We have irradiated ZnO nanowires with energetic ions, achieving bending and alignment in different directions. Not only the bending of single nanowires is studied in detail, but also the simultaneous alignment of large ensembles of ZnO nanowires. Computer simulations reveal how the bending is initiated by ion beam induced damage. Detailed structural characterization identifies dislocations to relax stresses and make the bending and alignment permanent, even surviving annealing procedures.

  2. Growth of aligned ZnO nanowires via modified atmospheric pressure chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Zhao, Yuping; Li, Chengchen; Chen, Mingming; Yu, Xiao; Chang, Yunwei; Chen, Anqi; Zhu, Hai; Tang, Zikang

    2016-12-01

    In this work, we report the growth of high-quality aligned ZnO nanowires via a facile atmospheric pressure chemical vapor deposition (CVD) method. The CVD reactor chamber used was more complicated than a conventional one due to the quartz boats loaded with sources (ZnO/C) and substrates being inserted into a semi-open quartz tube, and then placed inside the CVD reactor. The semi-open quartz tube played a very important role in growing the ZnO nanowires, and demonstrated that the transportation properties of Zn and O vapor differ from those in the conventional CVD reactor chamber. Aligned ZnO nanowires were successfully obtained, though they were only found at substrates located upstream. The very high crystalline quality of the obtained ZnO nanowires was demonstrated by high-resolution transmission electron microscopy and room temperature photoluminescence investigations. Such ZnO nanowires with high crystalline quality may provide opportunities for the fabrication of ZnO-based nano-devices in future.

  3. Fundamental understanding of the growth, doping and characterization of aligned ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Shen, Gang

    Zinc oxide (ZnO) is a II-VI semiconductor whose wide direct bandgap (3.37 eV) and large exciton binding energy (60 meV) make it compelling for optoelectronic devices such as light emitting diodes, lasers, photodetectors, solar cells, and mechanical energy harvesting devices. One dimensional structures of ZnO (nanowires) have become significant due to their unique physical properties arising from quantum confinement, and they are ideal for studying transport mechanisms in one-dimensional systems. In this doctoral research work, ZnO nanowire (NW) arrays were synthesized on sapphire substrates through carbo-thermal reduction of ZnO powders, and the effects of growth parameters on the properties of ZnO NW arrays were studied by scanning and transmission electron microscopy, X-ray diffraction, photoluminescence and Raman spectroscopy. Based on the phonon mode selection rules in wurtzite ZnO, confocal Raman spectroscopy was used to assess the alignment of ZnO NWs in an array, thereby complementing X-ray diffraction. Al doped ZnO NW arrays were achieved by mixing Al powder into the ZnO and graphite source mixture, and the presence of Al was confirmed by Energy-dispersive X-ray spectroscopy. The incorporation of Al had the effects of lowering the electrical resistivity, slightly deteriorating crystal quality and suppressing defect related green emission. Two models of ZnO NW growth were developed by establishing the relationship between NW length and diameter for undoped and Al doped ZnO NWs separately. The growth of undoped ZnO NWs followed the diffusion-induced model which was characterized by thin wires being longer than thick wires, while the growth of Al doped ZnO was controlled by Gibbs-Thomson effect which was characterized by thin wires being shorter than thin wires. Local electrode atom probe analysis of ZnO NWs was carried out to study the crystal stoichiometry and Al incorporation. Undoped ZnO NWs were found to be high purity with no detectable impurities

  4. Fast growth of well-aligned ZnO nanowire arrays by a microwave heating method and their photocatalytic properties.

    PubMed

    Cao, Guangxia; Hong, Kunquan; Wang, Wenda; Liu, Liqing; Xu, Mingxiang

    2016-10-28

    The fast growth of aligned ZnO nanowire arrays with optimized structure is attractive for electrical and optical devices. In this paper, we report a controllable and rapid growth of ZnO nanowire arrays by a microwave-assisted hydrothermal method. When using different zinc salts as the precursors, the morphology of the samples changes a lot and the length growth rate is several times different. The growth mechanism is also investigated. It is found that the solution near neutral pH value is ideal for fast nanowire growth, in which the length of the nanowires increases linearly with growth time and the growth rate is over ten times faster than that in the traditional hydrothermal method. Therefore, aligned ZnO nanowire arrays can grow up to tens of microns in a few hours, while the density and sizes of these nanowires can be well controlled. The ZnO nanowire arrays used as photocatalysts present good photocatalytic performance to the degradation of methyl orange (MO) due to the large surface area. So this paper provides an effective method to obtain vertically aligned ZnO nanowire arrays for practical applications.

  5. Fast growth of well-aligned ZnO nanowire arrays by a microwave heating method and their photocatalytic properties

    NASA Astrophysics Data System (ADS)

    Cao, Guangxia; Hong, Kunquan; Wang, Wenda; Liu, Liqing; Xu, Mingxiang

    2016-10-01

    The fast growth of aligned ZnO nanowire arrays with optimized structure is attractive for electrical and optical devices. In this paper, we report a controllable and rapid growth of ZnO nanowire arrays by a microwave-assisted hydrothermal method. When using different zinc salts as the precursors, the morphology of the samples changes a lot and the length growth rate is several times different. The growth mechanism is also investigated. It is found that the solution near neutral pH value is ideal for fast nanowire growth, in which the length of the nanowires increases linearly with growth time and the growth rate is over ten times faster than that in the traditional hydrothermal method. Therefore, aligned ZnO nanowire arrays can grow up to tens of microns in a few hours, while the density and sizes of these nanowires can be well controlled. The ZnO nanowire arrays used as photocatalysts present good photocatalytic performance to the degradation of methyl orange (MO) due to the large surface area. So this paper provides an effective method to obtain vertically aligned ZnO nanowire arrays for practical applications.

  6. Field emission behavior of vertically aligned ZnO nanowire planar cathodes

    SciTech Connect

    Semet, V.; Binh, Vu Thien; Pauporte, Th.; Joulaud, L.; Vermersch, F. J.

    2011-03-01

    A field emission (FE) study by scanning anode field emission microscopy was performed to evaluate the FE properties of vertically aligned zinc oxide (ZnO) nanowire arrays electrodeposited on a plane conductive surface. The specific FE behaviors of the cathode observed experimentally are (1) a turn-on macroscopic field of about 6 V/{mu}m for a FE current density J{sub FE} 5 x 10{sup -4} A/cm{sup 2}, (2) a stable FE characteristics for 5 x 10{sup -4} < J{sub FE} < 5 x 10{sup -2} A/cm{sup 2}, and (3) a brutal shut down of FE when J{sub FE} crossed a limiting value of {approx}0.05 A/cm{sup 2} due to a rapid evolution of the nanowires toward a bulbous tip geometry or a complete melting. A physical process of FE from ZnO nanostructures is proposed from the experimental data analyses. An effective surface barrier of about 1 eV was determined from the experimental Fowler-Nordheim plot and the presence of a Zn enriched surface was assumed in considering the possibility of important modifications of the crystallography and charge transfers at the surface of ZnO nanowires during the application of the strong electric field required for FE.

  7. Enhanced UV photosensitivity from rapid thermal annealed vertically aligned ZnO nanowires

    PubMed Central

    2011-01-01

    We report on the major improvement in UV photosensitivity and faster photoresponse from vertically aligned ZnO nanowires (NWs) by means of rapid thermal annealing (RTA). The ZnO NWs were grown by vapor-liquid-solid method and subsequently RTA treated at 700°C and 800°C for 120 s. The UV photosensitivity (photo-to-dark current ratio) is 4.5 × 103 for the as-grown NWs and after RTA treatment it is enhanced by a factor of five. The photocurrent (PC) spectra of the as-grown and RTA-treated NWs show a strong peak in the UV region and two other relatively weak peaks in the visible region. The photoresponse measurement shows a bi-exponential growth and bi-exponential decay of the PC from as-grown as well as RTA-treated ZnO NWs. The growth and decay time constants are reduced after the RTA treatment indicating a faster photoresponse. The dark current-voltage characteristics clearly show the presence of surface defects-related trap centers on the as-grown ZnO NWs and after RTA treatment it is significantly reduced. The RTA processing diminishes the surface defect-related trap centers and modifies the surface of the ZnO NWs, resulting in enhanced PC and faster photoresponse. These results demonstrated the effectiveness of RTA processing for achieving improved photosensitivity of ZnO NWs. PMID:21859456

  8. Alignment nature of ZnO nanowires grown on polished and nanoscale etched lithium niobate surface through self-seeding thermal evaporation method

    SciTech Connect

    Mohanan, Ajay Achath; Parthiban, R.; Ramakrishnan, N.

    2015-08-15

    Highlights: • ZnO nanowires were grown directly on LiNbO{sub 3} surface for the first time by thermal evaporation. • Self-alignment of the nanowires due to step bunching of LiNbO{sub 3} surface is observed. • Increased roughness in surface defects promoted well-aligned growth of nanowires. • Well-aligned growth was then replicated in 50 nm deep trenches on the surface. • Study opens novel pathway for patterned growth of ZnO nanowires on LiNbO{sub 3} surface. - Abstract: High aspect ratio catalyst-free ZnO nanowires were directly synthesized on lithium niobate substrate for the first time through thermal evaporation method without the use of a buffer layer or the conventional pre-deposited ZnO seed layer. As-grown ZnO nanowires exhibited a crisscross aligned growth pattern due to step bunching of the polished lithium niobate surface during the nanowire growth process. On the contrary, scratches on the surface and edges of the substrate produced well-aligned ZnO nanowires in these defect regions due to high surface roughness. Thus, the crisscross aligned nature of high aspect ratio nanowire growth on the lithium niobate surface can be changed to well-aligned growth through controlled etching of the surface, which is further verified through reactive-ion etching of lithium niobate. The investigations and discussion in the present work will provide novel pathway for self-seeded patterned growth of well-aligned ZnO nanowires on lithium niobate based micro devices.

  9. Low-temperature growth of well-aligned ZnO nanorods/nanowires on flexible graphite sheet and their photoluminescence properties

    SciTech Connect

    Zhong, Guo; Kalam, Abul; Al-Shihri, Ayed Sad; Su, Qingmei; Li, Jie; Du, Gaohui

    2012-06-15

    Highlights: ► Well-aligned ZnO nanostructures were grown on flexible graphite sheets at 500–650 °C. ► ZnO nanostructures are formed via self-catalytic vapor–solid process assisted by immiscibility of ZnO with graphite. ► The ZnO nanostructures show intensive green emission. ► The photoluminescence property can be easily tuned by changing growth condition or annealing treatment. -- Abstract: We have grown large-scale well-aligned ZnO nanorods/nanowires on commercial flexible graphite sheet (FGS) at low temperature via chemical vapor deposition method. The products were characterized by X-ray diffraction, scanning electron microscopy, and high-resolution transmission electron microscopy. The effects of the growth temperature and oxygen flow rate on the morphology of ZnO nanostructures have been investigated. The growth mechanism of ZnO is found to be a self-catalytic vapor–solid process assisted by the immiscibility of ZnO with graphite. The as-grown ZnO/FGS products show strong green emission and their photoluminescence properties can be tuned by changing growth condition or annealing treatment.

  10. Large-scale fabrication of vertically aligned ZnO nanowire arrays

    DOEpatents

    Wang, Zhong L; Das, Suman; Xu, Sheng; Yuan, Dajun; Guo, Rui; Wei, Yaguang; Wu, Wenzhuo

    2013-02-05

    In a method for growing a nanowire array, a photoresist layer is placed onto a nanowire growth layer configured for growing nanowires therefrom. The photoresist layer is exposed to a coherent light interference pattern that includes periodically alternately spaced dark bands and light bands along a first orientation. The photoresist layer exposed to the coherent light interference pattern along a second orientation, transverse to the first orientation. The photoresist layer developed so as to remove photoresist from areas corresponding to areas of intersection of the dark bands of the interference pattern along the first orientation and the dark bands of the interference pattern along the second orientation, thereby leaving an ordered array of holes passing through the photoresist layer. The photoresist layer and the nanowire growth layer are placed into a nanowire growth environment, thereby growing nanowires from the nanowire growth layer through the array of holes.

  11. Feasibility study of ZnO nanowire made accelerometer

    NASA Astrophysics Data System (ADS)

    Kim, Hyun-Chan; Ko, Hyun-U.; Song, Sangho; Yun, Youngmin; Kim, Jaehwan

    2016-04-01

    Vertically aligned arrays of ZnO nanowire can be used for many applications such as energy harvesters, UV sensors and mechanical sensors. Here we report the feasibility of a miniaturized accelerometer made with ZnO nanowire. For improving the sensitivity of miniaturized piezoelectric accelerometer, size of piezoelectric ceramic should be large which results in heavy accelerometer and low resonance frequency. To resolve the problem for the miniaturized accelerometer fabrication, ZnO nanowire is chosen. ZnO nanowire, which has piezoelectric property with Wurtzite structure. Since it has high aspect ratio, the use of ZnO nanowire leads to increase deformation and piezoelectric response output. The vertically ZnO nanowire array is grown on a copper substrate by hydrothermal synthesis process. Detail Fabrication process of the miniaturized accelerometer is illustrated. To prove the feasibility of the fabricated accelerometer, dynamic response test is performed in comparison with a commercial accelerometer.

  12. Growth of Vertically Aligned ZnO Nanowire Arrays Using Bilayered Metal Catalysts

    DTIC Science & Technology

    2012-01-01

    catalyst [7], the use of these ZnO NW arrays in the design and fabrication of new plasmonic structures is limited due to the poor adhesion of Au on the...ratios of catalyst components for the NWs growth and results indicate that very thin adhesion layers of Ni or Cu deposited prior to the Au layer are not...deleterious to the ZnO NW array growth. Significant improvement of the Au adhesion on the substrate was noted, opening the potential for direct

  13. ZnO nanowire lasers.

    PubMed

    Vanmaekelbergh, Daniël; van Vugt, Lambert K

    2011-07-01

    The pathway towards the realization of optical solid-state lasers was gradual and slow. After Einstein's paper on absorption and stimulated emission of light in 1917 it took until 1960 for the first solid state laser device to see the light. Not much later, the first semiconductor laser was demonstrated and lasing in the near UV spectral range from ZnO was reported as early as 1966. The research on the optical properties of ZnO showed a remarkable revival since 1995 with the demonstration of room temperature lasing, which was further enhanced by the first report of lasing by a single nanowire in 2001. Since then, the research focussed increasingly on one-dimensional nanowires of ZnO. We start this review with a brief description of the opto-electronic properties of ZnO that are related to the wurtzite crystal structure. How these properties are modified by the nanowire geometry is discussed in the subsequent sections, in which we present the confined photon and/or polariton modes and how these can be investigated experimentally. Next, we review experimental studies of laser emission from single ZnO nanowires under different experimental conditions. We emphasize the special features resulting from the sub-wavelength dimensions by presenting our results on single ZnO nanowires lying on a substrate. At present, the mechanism of lasing in ZnO (nanowires) is the subject of a strong debate that is considered at the end of this review.

  14. Large-scale fabrication of vertically aligned ZnO nanowire arrays

    DOEpatents

    Wang, Zhong Lin; Hu, Youfan; Zhang, Yan; Xu, Chen; Zhu, Guang

    2014-09-09

    A generator includes a substrate, a first electrode layer, a dense plurality of vertically-aligned piezoelectric elongated nanostructures, an insulating layer and a second electrode layer. The substrate has a top surface and the first electrode layer is disposed on the top surface of the substrate. The dense plurality of vertically-aligned piezoelectric elongated nanostructures extends from the first electrode layer. Each of the nanostructures has a top end. The insulating layer is disposed on the top ends of the nanostructures. The second electrode layer is disposed on the non-conductive layer and is spaced apart from the nanostructures.

  15. Growth of Ga-doped ZnO nanowires by two-step vapor phase method

    SciTech Connect

    Xu, C.; Kim, M.; Chun, J.; Kim, D.

    2005-03-28

    A two-step route is presented to dope Ga into ZnO nanowires and also fabricate heterostructures of Ga-doped ZnO nanowires on ZnO. The content of Ga in ZnO nanowires is about 7 at. % from energy-dispersive x-ray analysis. The single crystal Ga doped ZnO nanowires with the diameter of 40 nm and the length of 300-500 nm are well aligned on the ZnO bulk. The growth direction is along [001]. Raman scattering analysis shows that the doping of Ga into ZnO nanowires depresses Raman E{sub 1L} mode of ZnO, manifesting that Ga sites in ZnO are Zn sites (Ga{sub Zn}). The formation mechanism of Zn{sub 1-x}Ga{sub x}O nanowires/ZnO heterostructures is proposed.

  16. Cytotoxicity of ZnO Nanowire Arrays on Excitable Cells.

    PubMed

    Wang, Yongchen; Wu, Yu; Quadri, Farhan; Prox, Jordan D; Guo, Liang

    2017-04-07

    Zinc oxide (ZnO) nanowires have been widely studied for their applications in electronics, optics, and catalysts. Their semiconducting, piezoelectric, fluorescent, and antibacterial properties have also attracted broad interest in their biomedical applications. Thus, it is imperative to evaluate the biosafety of ZnO nanowires and their biological effects. In this study, the cellular level biological effects of ZnO nanowire arrays are specifically tested on three types of excitable cells, including NG108-15 neuronal cell line, HL-1 cardiac muscle cell line, and neonatal rat cardiomyocytes. Vertically aligned and densely packed ZnO nanowire arrays are synthesized using a solution-based method and used as a substrate for cell culture. The metabolism levels of all three types of cells cultured on ZnO nanowire arrays are studied using the 3-(4,5-dimethyl-2-thiazolyl)-2,5-diphenyl-2H-tetrazolium bromide (MTT) assays of a full factorial design. Under the studied settings, the results show statistically significant inhibitory effects of ZnO nanowire arrays on the metabolism of NG108-15 and HL-1 cells in comparison to gold, glass, and polystyrene substrates, and on the metabolism of cardiomyocytes in comparison to gold substrate.

  17. Selective area growth of well-ordered ZnO nanowire arrays with controllable polarity.

    PubMed

    Consonni, Vincent; Sarigiannidou, Eirini; Appert, Estelle; Bocheux, Amandine; Guillemin, Sophie; Donatini, Fabrice; Robin, Ivan-Christophe; Kioseoglou, Joseph; Robaut, Florence

    2014-05-27

    Controlling the polarity of ZnO nanowires in addition to the uniformity of their structural morphology in terms of position, vertical alignment, length, diameter, and period is still a technological and fundamental challenge for real-world device integration. In order to tackle this issue, we specifically combine the selective area growth on prepatterned polar c-plane ZnO single crystals using electron-beam lithography, with the chemical bath deposition. The formation of ZnO nanowires with a highly controlled structural morphology and a high optical quality is demonstrated over large surface areas on both polar c-plane ZnO single crystals. Importantly, the polarity of ZnO nanowires can be switched from O- to Zn-polar, depending on the polarity of prepatterned ZnO single crystals. This indicates that no fundamental limitations prevent ZnO nanowires from being O- or Zn-polar. In contrast to their catalyst-free growth by vapor-phase deposition techniques, the possibility to control the polarity of ZnO nanowires grown in solution is remarkable, further showing the strong interest in the chemical bath deposition and hydrothermal techniques. The single O- and Zn-polar ZnO nanowires additionally exhibit distinctive cathodoluminescence spectra. To a broader extent, these findings open the way to the ultimate fabrication of well-organized heterostructures made from ZnO nanowires, which can act as building blocks in a large number of electronic, optoelectronic, and photovoltaic devices.

  18. Growth of vertically aligned ZnO nanorods using textured ZnO films

    PubMed Central

    2011-01-01

    A hydrothermal method to grow vertical-aligned ZnO nanorod arrays on ZnO films obtained by atomic layer deposition (ALD) is presented. The growth of ZnO nanorods is studied as function of the crystallographic orientation of the ZnO films deposited on silicon (100) substrates. Different thicknesses of ZnO films around 40 to 180 nm were obtained and characterized before carrying out the growth process by hydrothermal methods. A textured ZnO layer with preferential direction in the normal c-axes is formed on substrates by the decomposition of diethylzinc to provide nucleation sites for vertical nanorod growth. Crystallographic orientation of the ZnO nanorods and ZnO-ALD films was determined by X-ray diffraction analysis. Composition, morphologies, length, size, and diameter of the nanorods were studied using a scanning electron microscope and energy dispersed x-ray spectroscopy analyses. In this work, it is demonstrated that crystallinity of the ZnO-ALD films plays an important role in the vertical-aligned ZnO nanorod growth. The nanorod arrays synthesized in solution had a diameter, length, density, and orientation desirable for a potential application as photosensitive materials in the manufacture of semiconductor-polymer solar cells. PACS 61.46.Hk, Nanocrystals; 61.46.Km, Structure of nanowires and nanorods; 81.07.Gf, Nanowires; 81.15.Gh, Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.) PMID:21899743

  19. Laser doping of Sb into ZnO nanowires in the Sb nanoparticle-dispersed liquid

    NASA Astrophysics Data System (ADS)

    Kawahara, Hirotaka; Shimogaki, Tetsuya; Higashihata, Mitsuhiro; Ikenoue, Hiroshi; Nakamura, Daisuke; Okada, Tatsuo

    2015-06-01

    We succeed in fabricating Sb-doped ZnO nanowires by laser doping using Sb nanoparticles (Sb NPs). Vertically aligned ZnO nanowires with a diameter of 100 nm were synthesized by the nanoparticles-assisted pulsed laser deposition. Sb NPs were prepared by laser ablation in liquid. The average size of 50 nm Sb NPs was successfully fabricated by laser ablation in ethanol. Subsequently, laser doping was performed by irradiating Nd:YAG laser beam (355 nm) in Sb-dispersed ethanol. After laser doping, the tip of ZnO nanowires was slightly deformed into spherical shape by laser heating. A rectifying property with a threshold voltage of 4.5 V was observed between n-type ZnO nanowires and Sb-doped ZnO nanowires.

  20. Effect of Ga-doping on the properties of ZnO nanowire

    SciTech Connect

    Ishiyama, Takeshi Nakane, Takaya Fujii, Tsutomu

    2015-02-27

    Arrays of single-crystal zinc oxide (ZnO) nanowires have been synthesized on silicon substrates by vapor-liquid-solid growth techniques. The effect of growth conditions including substrate temperature and Ar gas flow rate on growth properties of ZnO nanowire arrays were studied. Structural and optical characterization was performed using scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy. SEM images of the ZnO nanowire arrays grown at various Ar gas flow rates indicated that the alignment and structural features of ZnO nanowires were affected by the gas flow rate. The PL of the ZnO nanowire arrays exhibited strong ultraviolet (UV) emission at 380 nm and green emission around 510 nm. Moreover, the green emission reduced in Ga-doped sample.

  1. Structure and photovoltaic properties of ZnO nanowire for dye-sensitized solar cells.

    PubMed

    Kao, Ming-Cheng; Chen, Hone-Zern; Young, San-Lin; Lin, Chen-Cheng; Kung, Chung-Yuan

    2012-05-18

    Aligned ZnO nanowires with different lengths (1 to approximately 4 μm) have been deposited on indium titanium oxide-coated glass substrates by using the solution phase deposition method for application as a work electrode in dye-sensitized solar cells (DSSC). From the results, the increases in length of zinc oxide (ZnO) nanowires can increase adsorption of the N3 dye through ZnO nanowires to improve the short-circuit photocurrent (Jsc) and open-circuit voltage (Voc), respectively. However, the Jsc and Voc values of DSSC with ZnO nanowires length of 4.0 μm (4.8 mA/cm2 and 0.58 V) are smaller than those of DSSC with ZnO nanowires length of 3.0 μm (5.6 mA/cm2 and 0.62 V). It could be due to the increased length of ZnO nanowires also resulted in a decrease in the transmittance of ZnO nanowires thus reducing the incident light intensity on the N3 dye. Optimum power conversion efficiency (η) of 1.49% was obtained in a DSSC with the ZnO nanowires length of 3 μm.

  2. Dielectrophoretic fabrication and characterization of a ZnO nanowire-based UV photosensor.

    PubMed

    Suehiro, Junya; Nakagawa, Nobutaka; Hidaka, Shin-Ichiro; Ueda, Makoto; Imasaka, Kiminobu; Higashihata, Mitsuhiro; Okada, Tatsuo; Hara, Masanori

    2006-05-28

    Wide-gap semiconductors with nanostructures such as nanoparticles, nanorods, nanowires are promising as a new type of UV photosensor. Recently, ZnO (zinc oxide) nanowires have been extensively investigated for electronic and optoelectronic device applications. ZnO nanowires are expected to have good UV response due to their large surface area to volume ratio, and they might enhance the performance of UV photosensors. In this paper, a new fabrication method of a UV photosensor based on ZnO nanowires using dielectrophoresis is demonstrated. Dielectrophoresis (DEP) is the electrokinetic motion of dielectrically polarized materials in non-uniform electric fields. ZnO nanowires, which were synthesized by nanoparticle-assisted pulsed-laser deposition (NAPLD) and suspended in ethanol, were trapped in the microelectrode gap where the electric field became higher. The trapped ZnO nanowires were aligned along the electric field line and bridged the electrode gap. Under UV irradiation, the conductance of the DEP-trapped ZnO nanowires exponentially increased with a time constant of a few minutes. The slow UV response of ZnO nanowires was similar to that observed with ZnO thin films and might be attributed to adsorption and photodesorption of ambient gas molecules such as O(2) or H(2)O. At higher UV intensity, the conductance response became larger. The DEP-fabricated ZnO nanowire UV photosensor could detect UV light down to 10 nW cm(-2) intensity, indicating a higher UV sensitivity than ZnO thin films or ZnO nanowires assembled by other methods.

  3. Superhydrophobicity of Hierarchical and ZNO Nanowire Coatings

    DTIC Science & Technology

    2014-01-01

    constructed by growing various lengths of ZnO nanowires on micro- scale Si pyramids produced by chemical etching. The nano-size effect on wettability of...Chemistry A PAPER Pu bl is he d on 1 8 D ec em be r 20 13 . D ow nl oa de d by A ir F or ce B as e R es ea rc h L ab or at or y (A FR L ) D...The nano-size effect on wettability of nano/micro complex structures has been investigated by adjusting the ZnO nanowire length. As the nanowire

  4. Nanowire Array Gratings with ZnO Combs

    SciTech Connect

    Pan, Zhengwei; Mahurin, Shannon Mark; Dai, Sheng; Lowndes, Douglas H

    2005-01-01

    Diffraction gratings are mainly manufactured by mechanical ruling, interference lithography, or resin replication, which generally require expensive equipment, complicated procedures, and a stable environment. We describe the controlled growth of self-organized microscale ZnO comb gratings by a simple one-step thermal evaporation and condensation method. The ZnO combs consist of an array of very uniform, perfectly aligned, evenly spaced and long single-crystalline ZnO nanowires or nanobelts with periods in the range of 0.2 to 2 {mu}m. Diffraction experiments show that the ZnO combs can function as a tiny three-beam divider that may find applications in miniaturized integrated optics such as three-beam optical pickup systems.

  5. A novel maskless approach towards aligned, density modulated and multi-junction ZnO nanowires for enhanced surface area and light trapping solar cells.

    PubMed

    Kevin, M; Fou, Y H; Wong, A S W; Ho, G W

    2010-08-06

    A maskless method of employing polymer growth inhibitor layers is used to modulate the conflicting parameters of density and alignment of multi-junction nanowires via large-scale low temperature chemical route. This low temperature chemical route is shown to synthesize multi-junction nanostructures without compromising the crystal quality at the interfaces. The final morphology of optimized multi-junctions nanowire arrays can be demonstrated on various substrates due to substrate independence and low temperature processing. Here, we also fabricated devices based on density modulated multi-junction nanowires tuned to infiltrate nanoparticles. The fabrication of hierarchically structured nanowire/nanoparticles composites presents an advantageous structure, one that allows nanoparticles to provide large surface areas for dye adsorption, whilst the nanowires can enhance the light harvesting, electron transport rate, and also the mechanical properties of the films. This work can be of great scientific and commercial interest since the technique employed is of low temperature (<90 degrees C) and economical for large-scale solution processing, much valued in today's flexible display and photovoltaic industries.

  6. Selective growth of vertical ZnO nanowires with the control of hydrothermal synthesis and nano-imprint technology.

    PubMed

    Song, Jaejin; Baek, Seonghoon; Lee, Heon; Lim, Sangwoo

    2009-06-01

    Nano-imprint technology is one of the most advanced technologies for the fabrication of nano-size patterning. In this study, nano-imprint technology was used for the selective growth of ZnO nanowires on the Si wafer. When the poly methyl-methacrylate (PMMA) was first patterned by a nano-imprint process and ZnO seed layer was deposited and patterned by lift-off, ZnO nanowires were not vertically grown on the whole area of the patterned seed layer. Synthesis in zinc sulfate solution exhibited well-structured ZnO nanowires compared to the zinc nitrate solution, but uniformly aligned vertical growth of ZnO nanowires was not observed in either cases. On the other hand, when the PMMA was patterned using a nano-imprint process in the presence of seed layer, and ZnO nanowires were synthesized in zinc sulfate solution, selective growth of vertically aligned ZnO nanowires on 0.5 microm pattern sizes was achieved. The observation in this study suggests that the selective growth of ZnO nanowires on a defined pattern size can be obtained with the modification of pattering sequence and the control of low temperature hydrothermal synthesis of ZnO nanowires.

  7. Surface-diffusion induced growth of ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Kim, D. S.; Gösele, U.; Zacharias, M.

    2009-05-01

    The growth rate of ZnO nanowires grown epitaxially on GaN/sapphire substrates is studied. An inverse proportional relation between diameter and length of the nanowires is observed, i.e., nanowires with smaller diameters grow faster than larger ones. This unexpected result is attributed to surface diffusion of ZnO admolecules along the sidewalls of the nanowires. In addition, the unique c-axis growth of ZnO nanowires, which does not require a catalytic particle at the tip of the growing nanowires is discussed by taking into account polarity, surface free energy, and ionicity. Activation energies of the nanowire growth are determined as well.

  8. Depth resolved luminescence from oriented ZnO nanowires.

    SciTech Connect

    Rosenberg, R. A.; Abu Haija, M.; Vijayalakshmi, K.; Zhou, J.; Xu, S.; Wang, Z. L.; Georgia Inst. of Tech.

    2009-12-14

    We have utilized the limited penetration depth of x-rays to study the near-surface properties of vertically aligned ZnO nanowires. For an energy of 600 eV the penetration depth varies between 3 and 132 nm as the incidence angle changes from 2{sup o} to 33{sup o}. Thus, by obtaining optical luminescence spectra as a function of incidence angle, it is possible to probe the near-surface region with nanometer-scale resolution. We will present angle dependent optical luminescence data from oriented ZnO nanowires. By fitting the results to a simple model, we extract a depth for the surface defect regions of -14 nm.

  9. Nanofabrication on ZnO nanowires

    SciTech Connect

    Zhan Jinhua; Bando, Yoshio; Hu, Junqing; Golberg, Dmitri

    2006-12-11

    ZnO nanowires were subjected to convergent electron beam irradiation in a 300 kV transmission electron microscope. The size of perforated hexagonal pores generated by irradiation can vary with the beam size. An irradiated area is denuded layer by layer via removal of Zn and O atoms. The polar ZnO surfaces have a higher resistance to irradiation than the unpolar ones. Ultrathin nanobridges, {approx}1 nm thick or less, were generated through deliberate removal of Zn and O atomic monolayers.

  10. Enhanced field emission from ZnO nanowire arrays utilizing MgO buffer between seed layer and silicon substrate

    NASA Astrophysics Data System (ADS)

    Chen, Si; Chen, Jiangtao; Liu, Jianlin; Qi, Jing; Wang, Yuhua

    2016-11-01

    Field emitters based on ZnO nanowires and other nanomaterials are promising high-brightness electron sources for field emission display, microscopy and other applications. The performance of a ZnO nanowire field emitter is linked to the quality, conductivity and alignment of the nanowires on a substrate, therefore requiring ways to improve these parameters. Here, ZnO nanowire arrays were grown on ZnO seed layer on silicon substrate with MgO buffer between the seed layer and Si. The turn-on field and enhancement factor of these nanowire arrays are 3.79 V/μm and 3754, respectively. These properties are improved greatly compared to those of ZnO nanowire arrays grown on ZnO seed layer without MgO buffer, which are 5.06 V/μm and 1697, respectively. The enhanced field emission properties can be attributed to better electron transport in seed layer, and better nanowire alignment because of MgO buffer.

  11. Electrical properties of individual ZnO nanowires.

    PubMed

    Sakurai, M; Wang, Y G; Uemura, T; Aono, M

    2009-04-15

    The electrical properties of individual ZnO nanowires were investigated for two methods of fabricating nanowire-electrode junctions. The number of carriers in the nanowires was increased by electrostatically doping them by applying a gate voltage. The nanowires were chemically doped by introducing impurities during growth. The Ga-doped nanowires had a linear current-voltage relationship over a wide voltage region. The nanowire-electrode junctions were formed either by using lithography to form electrodes on the nanowire or by using an AFM probe to move a nanowire onto prepared electrodes. With both methods, electrodes made of Ga-doped ZnO were found to make better electrical contact with the nanowire than those made of Ti/Au.

  12. Doped ZnO nanowires obtained by thermal annealing.

    PubMed

    Shan, C X; Liu, Z; Wong, C C; Hark, S K

    2007-02-01

    Doped ZnO nanowires were prepared in a very simple and inexpensive thermal annealing method using ZnSe nanowires as a precursor. As doped, P doped, and As/P codoped ZnO nanowires were obtained in this method. X-ray diffraction shows that the zincblende ZnSe nanowires were converted to doped wurtzite ZnO nanowires. The incorporation of the dopants was confirmed by energy dispersive X-ray spectroscopy. The doping concentration could be adjusted by changing the annealing temperature and duration. Scanning electron microscopy indicated that the morphology of the ZnSe nanowires was essentially retained after the annealing and doping process. Photoluminescence spectroscopy also verified the incorporation of the dopants into the nanowires.

  13. In-plane trapping and manipulation of ZnO nanowires by a hybrid plasmonic field.

    PubMed

    Zhang, Lichao; Dou, Xiujie; Min, Changjun; Zhang, Yuquan; Du, Luping; Xie, Zhenwei; Shen, Junfeng; Zeng, Yujia; Yuan, Xiaocong

    2016-05-14

    In general, when a semiconductor nanowire is trapped by conventional laser beam tweezers, it tends to be aligned with the trapping beam axis rather than confined in the horizontal plane, and this limits the application of these nanowires in many in-plane nanoscale optoelectronic devices. In this work, we achieve the in-plane trapping and manipulation of a single ZnO nanowire by a hybrid plasmonic tweezer system on a flat metal surface. The gap between the nanowire and the metallic substrate leads to an enhanced gradient force caused by deep subwavelength optical energy confinement. As a result, the nanowire can be securely trapped in-plane at the center of the excited surface plasmon polariton field, and can also be dynamically moved and rotated by varying the position and polarization direction of the incident laser beam, which cannot be performed using conventional optical tweezers. The theoretical results show that the focused plasmonic field induces a strong in-plane trapping force and a high rotational torque on the nanowire, while the focused optical field produces a vertical trapping force to produce the upright alignment of the nanowire; this is in good agreement with the experimental results. Finally, some typical ZnO nanowire structures are built based on this technique, which thus further confirms the potential of this method for precise manipulation of components during the production of nanoelectronic and nanophotonic devices.

  14. Synthesis of Vertically-Aligned Zinc Oxide Nanowires and Their Application as a Photocatalyst

    PubMed Central

    Zhou, Qiong; Wen, John Z.; Zhao, Pei; Anderson, William A.

    2017-01-01

    Vertically aligned zinc oxide (ZnO) nanowires were hydrothermally synthesized on a glass substrate with the assistance of a pre-coated ZnO seeding layer. The crystalline structure, morphology and transmission spectrum of the as-synthesized sample were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), and ultraviolet-visible (UV-Vis) spectrophotometry, respectively, indicating a wurzite ZnO material of approximately 100 nm wire diameter and absorbance at 425 nm and lower wavelengths. The photocatalytic activity of the sample was tested via the degradation of methyl orange in aqueous solution under UV-A irradiation. The synthesized nanowires showed a high photocatalytic activity, which increased up to 90% degradation in 2 h as pH was increased to 12. It was shown that the photocatalytic activity of the nanowires was proportional to the length to diameter ratio of the nanowires, which was in turn controlled by the growth time and grain size of the seed layer. Estimates suggest that diffusion into the regions between nanowires may be significantly hindered. Finally, the reusability of the prepared ZnO nanowire samples was also investigated, with results showing that the nanowires still showed 97% of its original photoactivity after ten cycles of use. PMID:28336843

  15. Power generation from base excitation of a Kevlar composite beam with ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Malakooti, Mohammad H.; Hwang, Hyun-Sik; Sodano, Henry A.

    2015-04-01

    One-dimensional nanostructures such as nanowires, nanorods, and nanotubes with piezoelectric properties have gained interest in the fabrication of small scale power harvesting systems. However, the practical applications of the nanoscale materials in structures with true mechanical strengths have not yet been demonstrated. In this paper, piezoelectric ZnO nanowires are integrated into the fiber reinforced polymer composites serving as an active phase to convert the induced strain energy from ambient vibration into electrical energy. Arrays of ZnO nanowires are grown vertically aligned on aramid fibers through a low-cost hydrothermal process. The modified fabrics with ZnO nanowires whiskers are then placed between two carbon fabrics as the top and the bottom electrodes. Finally, vacuum resin transfer molding technique is utilized to fabricate these multiscale composites. The fabricated composites are subjected to a base excitation using a shaker to generate charge due to the direct piezoelectric effect of ZnO nanowires. Measuring the generated potential difference between the two electrodes showed the energy harvesting application of these multiscale composites in addition to their superior mechanical properties. These results propose a new generation of power harvesting systems with enhanced mechanical properties.

  16. Development of multifunctional fiber reinforced polymer composites through ZnO nanowire arrays

    NASA Astrophysics Data System (ADS)

    Malakooti, Mohammad H.; Patterson, Brendan A.; Hwang, Hyun-Sik; Sodano, Henry A.

    2016-04-01

    Piezoelectric nanowires, in particular zinc oxide (ZnO) nanowires, have been vastly used in the fabrication of electromechanical devices to convert wasted mechanical energy into useful electrical energy. Over recent years, the growth of vertically aligned ZnO nanowires on various structural fibers has led to the development of fiber-based nanostructured energy harvesting devices. However, the development of more realistic energy harvesters that are capable of continuous power generation requires a sufficient mechanical strength to withstand typical structural loading conditions. Yet, a durable, multifunctional material system has not been developed thoroughly enough to generate electrical power without deteriorating the mechanical performance. Here, a hybrid composite energy harvester is fabricated in a hierarchical design that provides both efficient power generating capabilities while enhancing the structural properties of the fiber reinforced polymer composite. Through a simple and low-cost process, a modified aramid fabric with vertically aligned ZnO nanowires grown on the fiber surface is embedded between woven carbon fabrics, which serve as the structural reinforcement as well as the top and the bottom electrodes of the nanowire arrays. The performance of the developed multifunctional composite is characterized through direct vibration excitation and tensile strength examination.

  17. High mobility ZnO nanowires for terahertz detection applications

    SciTech Connect

    Liu, Huiqiang; Peng, Rufang E-mail: chusheng@mail.sysu.edu.cn; Chu, Shijin; Chu, Sheng E-mail: chusheng@mail.sysu.edu.cn

    2014-07-28

    An oxide nanowire material was utilized for terahertz detection purpose. High quality ZnO nanowires were synthesized and field-effect transistors were fabricated. Electrical transport measurements demonstrated the nanowire with good transfer characteristics and fairly high electron mobility. It is shown that ZnO nanowires can be used as building blocks for the realization of terahertz detectors based on a one-dimensional plasmon detection configuration. Clear terahertz wave (∼0.3 THz) induced photovoltages were obtained at room temperature with varying incidence intensities. Further analysis showed that the terahertz photoresponse is closely related to the high electron mobility of the ZnO nanowire sample, which suggests that oxide nanoelectronics may find useful terahertz applications.

  18. Quantum Efficiency of ZnO Nanowire Nanolasers

    SciTech Connect

    Zhang, Yanfeng; Russo, Richard E.; Mao, Samuel S.

    2005-03-28

    Crystalline ZnO nanowires were grown on sapphire and silicon substrates using pulsed-laser deposition. The optical properties of nanowire nanolasers, including their absolute light emission intensity and external and internal quantum efficiencies were experimentally determined. The external differential quantum efficiency was measured to be as high as 60% for lasing ZnO nanowires of 7.5 {micro}m in length, compared to a value of approximately 10% for photoluminescence. The absolute light emission intensity for individual nanowires was found to be in the vicinity of 0.1 mW. By measuring the dependence of external differential quantum efficiency on the cavity length, the internal quantum efficiency of ZnO nanowire nanolasers was determined to be about 85%.

  19. Defect properties of ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Stehr, J. E.; Devika, M.; Reddy, N. Koteeswara; Tu, C. W.; Chen, W. M.; Buyanova, I. A.

    2014-02-01

    In this work we examined optical and defect properties of as-grown and Ni-coated ZnO nanowires (NWs) grown by rapid thermal chemical vapor deposition by means of optically detected magnetic resonance (ODMR). Several grown-in defects are revealed by monitoring visible photoluminescence (PL) emissions and are attributed to Zn vacancies, O vacancies, a shallow (but not effective mass) donor and exchange-coupled pairs of a Zn vacancy and a Zn interstitial. It is also found that the same ODMR signals are detected in the as-grown and Ni-coated NWs, indicating that metal coatings does not significantly affect formation of the aforementioned defects and that the observed defects are located in the bulk of the NWs.

  20. Controlled growth of ZnO nanowires by nanoparticle-assisted laser ablation deposition

    NASA Astrophysics Data System (ADS)

    Okada, T.; Guo, R.; Nishimura, J.; Matsumoto, M.; Higashihata, M.; Nakamura, D.

    2008-02-01

    Vertically aligned ZnO nanowires have been successfully synthesized on c-cut sapphire substrates by a catalyst-free nanoparticle-assisted pulsed-laser ablation deposition (NAPLD) in Ar and N II background gases. In NAPLD, the nanoparticles formed in a background gas by laser ablation are used as a starting material for the growth of the nanowires. The surface density of the nanowires can be controlled by varying the density of nanoparticles, which are accomplished by changing the energy of the ablation laser, the repetition rate of the laser and so on. When single ZnO nanowire synthesized in a N II background gas was excited by 355 nm laser-pulse with a pulse-width of 8 ns, stimulated emission was clearly observed, indicating high quality of the nanowire. These nanowires were used as building blocks for an ultraviolet light emitting diode with a structure of n-ZnO/ZnO nanowire/p-GaN.

  1. Hierarchical Carbon Fibers with ZnO Nanowires for Volatile Sensing in Composite Curing (Postprint)

    DTIC Science & Technology

    2014-07-01

    AFRL-RX-WP-JA-2014-0171 HIERARCHICAL CARBON FIBERS WITH ZnO NANOWIRES FOR VOLATILE SENSING IN COMPOSITE CURING (POSTPRINT) Gregory...REPORT TYPE Interim 3. DATES COVERED (From – To) 16 April 2012 – 02 June 2014 4. TITLE AND SUBTITLE HIERARCHICAL CARBON FIBERS WITH ZnO NANOWIRES ...needed to demonstrate the use of Zinc Oxide (ZnO) nanowire coated carbon fibers as a volatile sensor. ZnO nanowires are demonstrated to function as

  2. Pressure-dependent photoluminescence study of ZnO nanowires

    SciTech Connect

    Shan, W.; Walukiewicz, W.; Ager III, J.W.; Yu, K.M.; Zhang, Y.; Mao, S.S.; Kling, R.

    2004-09-13

    The pressure dependence of the photoluminescence (PL) transition associated with the fundamental band gap of ZnO nanowires has been studied at pressures up to 15 GPa. ZnO nanowires are found to have a higher structural phase transition pressure around 12 GPa as compared to 9.0 GPa for bulk ZnO. The pressure-induced energy shift of the near band-edge luminescence emission yields a linear pressure coefficient of 29.6 meV/GPa with a small sublinear term of -0.43 meV/GPa{sup 2}. An effective hydrostatic deformation potential -3.97 eV for the direct band gap of the ZnO nanowires is derived from the result.

  3. Selective growth of catalyst-free ZnO nanowire arrays on Al:ZnO for device application

    SciTech Connect

    Chung, T. F.; Luo, L. B.; He, Z. B.; Leung, Y. H.; Shafiq, I.; Yao, Z. Q.; Lee, S. T.

    2007-12-03

    Vertically aligned ZnO nanowire (NW) arrays have been synthesized selectively on patterned aluminum-doped zinc oxide (AZO) layer deposited on silicon substrates without using any metal catalysts. The growth region was defined by conventional photolithography with an insulating template. Careful control of the types of template materials and growth conditions allows good alignment and growth selectivity for ZnO NW arrays. Sharp ultraviolet band-edge peak observed in the photoluminescence spectra of the patterned ZnO NW arrays reveals good optical qualities. The current-voltage characteristics of ZnO NWs/AZO/p-Si device suggest that patterned and aligned ZnO NW arrays on AZO may be used in optoelectronic devices.

  4. Flexible Dye-Sensitized Solar Cell based on Vertical ZnO Nanowire Arrays

    SciTech Connect

    Chu, Sheng; Li, Dongdong; Chang, Pai-Chun; Lu, Jia Grace

    2010-09-26

    Flexible dye-sensitized solar cells are fabricated using vertically aligned ZnO nanowire arrays that are transferred onto ITO-coated poly(ethylene terephthalate) substrates using a simple peel-off process. The solar cells demonstrate an energy conversion efficiency of 0.44% with good bending tolerance. This technique paves a new route for building large-scale cost-effective flexible photovoltaic and optoelectronic devices.

  5. Flexible Dye-Sensitized Solar Cell Based on Vertical ZnO Nanowire Arrays

    PubMed Central

    2011-01-01

    Flexible dye-sensitized solar cells are fabricated using vertically aligned ZnO nanowire arrays that are transferred onto ITO-coated poly(ethylene terephthalate) substrates using a simple peel-off process. The solar cells demonstrate an energy conversion efficiency of 0.44% with good bending tolerance. This technique paves a new route for building large-scale cost-effective flexible photovoltaic and optoelectronic devices. PMID:27502660

  6. Growth of ZnO nanowires on nonwoven polyethylene fibers

    NASA Astrophysics Data System (ADS)

    Baruah, Sunandan; Thanachayanont, Chanchana; Dutta, Joydeep

    2008-04-01

    We report the growth of ZnO nanowires on nonwoven polyethylene fibers using a simple hydrothermal method at a temperature below the boiling point of water. The ZnO nanowires were grown from seed ZnO nanoparticles affixed onto the fibers. The seed ZnO nanoparticles, with diameters of about 6-7 nm, were synthesized in isopropanol by reducing zinc acetate hydrate with sodium hydroxide. The growth process was carried out in a sealed chemical bath containing an equimolar solution of zinc nitrate hexahydrate and hexamethylene tetramine at a temperature of 95 °C over a period of up to 20 h. The thickness and length of the nanowires can be controlled by using different concentrations of the starting reactants and growth durations. A 0.5 mM chemical bath yielded nanowires with an average diameter of around 50 nm, while a 25 mM bath resulted in wires with a thickness of up to about 1 μm. The length of the wires depends both on the concentration of the precursor solution as well as the growth duration, and in 20 h, nanowires as long as 10 μm can be grown. The nonwoven mesh of polyethylene fibers covered with ZnO nanowires can be used for novel applications such as water treatment by degrading pollutants by photocatalysis. Photocatalysis tests carried out on standard test contaminants revealed that the polyethylene fibers with ZnO nanowires grown on them could accelerate the photocatalytic degradation process by a factor of 3.

  7. Fabrication and characterization of ZnO nanowires grown on Ti substrate

    NASA Astrophysics Data System (ADS)

    Meng, Gang; Fang, Xiaodong; Tao, Ruhua; Dong, Weiwei; Deng, Zanhong; Zhou, Shu

    2009-07-01

    Zinc oxide (ZnO) with a wide band gap of 3.37 eV, and a large exciton binding energy of 60 mV at room temperature, is one of the most important n-type semiconductor, that has potential applications in the area of short-wavelength optoelectronic devices, gas sensors, solar cells, and field emitters. Some advanced nanodevices based on one-dimensional (1-D) ZnO nanomaterials have been successfully demonstrated in the past few years. The types of substrate have a great influence on the properties of ZnO nanostrctural devices. Semiconductor substrates such as Si and Al2O3 were widely used for the collection or epitaxial growth of ZnO nanostructures, for metal substrate, Fe and Cu foil has also been used as substrate, there are few reports on ZnO nanowires grown on Ti foil, Ti is an important electrode metal that ohmic contact can be appropriately achieved, which is critical for semiconductor device application. Besides, both Ti and ZnO show good biocompatibility, it is expected that ZnO nanowires/ Ti show good performance on bio-sensors. In this paper, 1-D ZnO nanostructures have been successfully fabricated on the conductive Ti substrate via a vapor phase transport (VPT) method by carbothermal reduction of ZnO and graphite powder mixture in a tube furnace at 850°C. The final products were characterized by means of field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), high-solution transmission electron microscope (HRTEM) (equipped with selected area electron diffraction, SAED), and photoluminescence (PL) spectroscopy. FE SEM results show that dense, ultra-long (>10μm), and locally aligned ZnO nanowire arrays were grown on the Ti foil. The diameter of nanowires exhibits a wide range from 150 nm to about 500nm. Structural characterizations (XRD, SAED, HRTEM) indicate the as synthesized nanostructures have a ZnO wurtzite structure and are perfect single crystalline without any defects or impurities. The growth direction is [0001]. Optical

  8. Oxygen sensing characteristics of individual ZnO nanowire transistors

    SciTech Connect

    Li, Q.H.; Liang, Y.X.; Wan, Q.; Wang, T.H.

    2004-12-27

    Individual ZnO nanowire transistors are fabricated, and their sensing properties are investigated. The transistors show a carrier density of 2300 {mu}m{sup -1} and mobility up to 6.4 cm{sup 2}/V s, which are obtained from the I{sub SD}-V{sub G} curves. The threshold voltage shifts in the positive direction and the source-drain current decreases as ambient oxygen concentration increases. However, the opposite occurs when the transistors are under illumination. Surface adsorbates on the ZnO nanowires affect both the mobility and the carrier density. Our data are helpful in understanding the sensing mechanism of the gas sensors.

  9. ZnO nanowire-based CO sensor

    NASA Astrophysics Data System (ADS)

    Ho, Mon-Shu; Chen, Wei-Hao; Chen, Yu-Lin; Chang, Meng-Fan

    This study applied ZnO nanowires to the fabrication of a CO gas sensor operable at room temperature. Following the deposition of a seed layer by spin coating, an aqueous solution method was used to grow ZnO nanowires. This was followed by the self-assembly of an electrode array via dielectrophoresis prior to the fabrication of the CO sensing device. The material characteristics were analyzed using FE-SEM, EDS, GIXRD, FE-TEM, and the measurement of photoluminescence (PL). Our results identified the ZnO nanowires as a single crystalline wurtzite structure. Extending the growth period from 30 min to 360 min led to an increase in the length and diameter of the nanowires. After two hours, the ZnO presented a preferred crystal orientation of [002]. Sensor chips were assembled using 60 pairs of electrodes with gaps of 2 μm, over which were lain nanowires to complete the sensing devices. The average sensing response was 48.37 s and the average recovery time was 65.61 s, with a sensing response magnitude of approximately 6.8% at room temperature.

  10. Synthesis of nanograined ZnO nanowires and their enhanced gas sensing properties.

    PubMed

    Park, Sunghoon; An, Soyeon; Ko, Hyunsung; Jin, Changhyun; Lee, Chongmu

    2012-07-25

    Polycrystalline ZnO nanowires with grain sizes ranging from 20 to 100 nm were synthesized using a newly designed two-step process: (first step) synthesis of ZnSe nanowires by vapor transportation of a mixture of ZnSe powders; and (second step) thermal oxidation of the ZnSe nanowires at 650 °C. Compared to the single-crystal ZnO nanowire gas sensors and other nanomaterial gas sensors reported previously, the multiple networked nanowire gas sensors fabricated from the nanograined ZnO nanowires showed substantially enhanced electrical responses to NO2 gas at 300 °C. The NO2 gas sensing properties of the nanograined ZnO nanowires increased dramatically with increasing NO2 concentration. The multiple-networked nanograined ZnO nanowire sensor showed a response value of 237,263% at 10 ppm NO2 and 300 °C, whereas the single-crystal ZnO nanowire sensors showed a response of only 6.5% under the same conditions. The recovery time of the nanograined ZnO nanowire sensor was much shorter than that of the normal ZnO nanowire sensor over the NO2 concentration range of 1-10 ppm, even though the response time of the former was somewhat longer than that of the latter. The origin of the enhanced NO2 gas sensing properties of the nanograined ZnO nanowire sensor is discussed.

  11. Synthesis and characterization of ZnO nanowires for nanosensor applications

    SciTech Connect

    Lupan, O.; Emelchenko, G.A.; Ursaki, V.V.; Chai, G.; Redkin, A.N.; Gruzintsev, A.N.; Tiginyanu, I.M.; Chow, L.; Ono, L.K.; and others

    2010-08-15

    In this paper we report the synthesis of ZnO nanowires via chemical vapor deposition (CVD) at 650 {sup o}C. It will be shown that these nanowires are suitable for sensing applications. ZnO nanowires were grown with diameters ranging from 50 to 200 nm depending on the substrate position in a CVD synthesis reactor and the growth regimes. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL), and Raman spectroscopy (RS) have been used to characterize the ZnO nanowires. To investigate the suitability of the CVD synthesized ZnO nanowires for gas sensing applications, a single ZnO nanowire device (50 nm in diameter) was fabricated using a focused ion beam (FIB). The response to H{sub 2} of a gas nanosensor based on an individual ZnO nanowire is also reported.

  12. Catalyst-free growth of ZnO nanowires by metal-organic chemical vapour deposition (MOCVD) and thermal evaporation

    SciTech Connect

    Lee, Woong; Jeong, Min-Chang; Myoung, Jae-Min

    2004-08-02

    ZnO nanowires were grown on GaAs(0 0 2) substrates using metal-organic chemical vapour deposition (MOCVD) and on Si(0 0 1) substrates using thermal evaporation of source powders, respectively. It was demonstrated that well-aligned single crystalline nanowires could be grown with controlled sizes using a typical thin film deposition technique without catalysts. Arsenic doping of the ZnO nanowires grown on GaAs substrate was possible using post-growth heat-treatment, proposing a possible way of producing p-type ZnO nanowires. It was also shown that simplified process of carrier-free thermal evaporation without catalyst could be employed to grow nanowires with high yield while maintaining good crystalline and optical properties. Application potential of the nanowires as probes of atomic force microscopes (AFMs) was discussed by predicting their structural compatibility with AFM cantilevers based on continuum elasticity. It was predicted that the nanowires fabricated herein are structurally compatible with typical AFM cantilevers suggesting that they are promising candidates for high aspect ratio probes.

  13. An optimal thermal evaporation synthesis of c-axis oriented ZnO nanowires with excellent UV sensing and emission characteristics

    SciTech Connect

    Saha, Tridib; Achath Mohanan, Ajay; Swamy, Varghese; Guo, Ningqun; Ramakrishnan, N.

    2016-05-15

    Highlights: • c-Axis alignment of ZnO nanowires was optimized using self-seeding thermal evaporation method. • Influence of purified air on the morphology and optoelectronic properties were studied. • Nanowires grown under optimal conditions exhibit strong UV emission peak in PL spectrum. • Optimized growth condition establish nanowires of excellent UV sensing characteristics - Abstract: Well-aligned (c-axis oriented) ZnO nanowire arrays were successfully synthesized on Si (1 0 0) substrates through an optimized self-seeding thermal evaporation method. An open-ended chemical vapor deposition (CVD) setup was used in the experiment, with argon and purified air as reaction gases. Epitaxial growth of c-axis oriented ZnO nanowires was observed for 5 sccm flow rate of purified air, whereas Zn/Zn suboxide layers and multiple polycrystalline layers of ZnO were obtained for absence and excess of purified air, respectively. Ultraviolet (UV) sensing and emission properties of the as-grown ZnO nanostructures were investigated through the current–voltage (I–V) characteristics of the nanowires under UV (λ = 365 nm) illumination of 8 mW/cm{sup 2} and using photoluminescence spectra. Nanowires grown under optimum flow of air emitted four times higher intensity of 380 nm UV light as well as exhibited 34 times higher UV radiation sensitivity compared to that of other nanostructures synthesized in this study.

  14. Co doped ZnO nanowires as visible light photocatalysts

    NASA Astrophysics Data System (ADS)

    Šutka, Andris; Käämbre, Tanel; Pärna, Rainer; Juhnevica, Inna; Maiorov, Mihael; Joost, Urmas; Kisand, Vambola

    2016-06-01

    High aspect ratio cobalt doped ZnO nanowires showing strong photocatalytic activity and moderate ferromagnetic behaviour were successfully synthesized using a solvothermal method and characterized by scanning electron microscopy (SEM), X-ray powder diffraction (XRD), X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), vibrating sample magnetometry (VSM) and UV-visible absorption spectroscopy. The photocatalytic activities evaluated for visible light driven degradation of an aqueous methylene orange (MO) solution were higher than for Co doped ZnO nanoparticles at the same doping level and synthesized by the same synthesis route. The rate constant for MO visible light photocatalytic degradation was 1.9·10-3 min-1 in case of nanoparticles and 4.2·10-3 min-1 in case of nanowires. We observe strongly enhanced visible light photocatalytic activity for moderate Co doping levels, with an optimum at a composition of Zn0.95Co0.05O. The enhanced photocatalytic activities of Co doped ZnO nanowires were attributed to the combined effects of enhanced visible light absorption at the Co sites in ZnO nanowires, and improved separation efficiency of photogenerated charge carriers at optimal Co doping.

  15. Thermal Conductivity of ZnO Single Nanowire.

    PubMed

    Yuldashev, Sh U; Yalishev, V Sh; Cho, H D; Kang, T W

    2016-02-01

    The thermal conductivity of a single ZnO nanowire with diameter of ~150 nm was measured using a four-point-probe 3omega method over a temperature range of 140-300 K. The measured ther- mal conductivity of ZnO nanowire is strongly reduced compared to bulk ZnO crystal due to the enhanced phonon-boundary and impurity (isotope) scattering. The maximum of the thermal conductivity is shifted to a higher temperature than that of bulk counterpart. Temperature dependent measurements show that beyond the low-temperature maximum, the thermal conductivity decreases with temperature as T(-1.5) indicating strong impurity (isotope) scattering at intermediate and high temperatures.

  16. Coating and enhanced photocurrent of vertically aligned zinc oxide nanowire arrays with metal sulfide materials.

    PubMed

    Volokh, Michael; Diab, Mahmud; Magen, Osnat; Jen-La Plante, Ilan; Flomin, Kobi; Rukenstein, Pazit; Tessler, Nir; Mokari, Taleb

    2014-08-27

    Hybrid nanostructures combining zinc oxide (ZnO) and a metal sulfide (MS) semiconductor are highly important for energy-related applications. Controlled filling and coating of vertically aligned ZnO nanowire arrays with different MS materials was achieved via the thermal decomposition approach of single-source precursors in the gas phase by using a simple atmospheric-pressure chemical vapor deposition system. Using different precursors allowed us to synthesize multicomponent structures such as nanowires coated with alloy shell or multishell structures. Herein, we present the synthesis and structural characterization of the different structures, as well as an electrochemical characterization and a photovoltaic response of the ZnO-CdS system, in which the resulting photocurrent upon illumination indicates charge separation at the interface.

  17. Liquid crystal alignment on ZnO nanostructure films

    NASA Astrophysics Data System (ADS)

    Chung, Yueh-Feng; Chen, Mu-Zhe; Yang, Sheng-Hsiung; Jeng, Shie-Chang

    2016-03-01

    The study of liquid crystal (LC) alignment is important for fundamental researches and industrial applications. The tunable pretilt angles of liquid crystal (LC) molecules aligned on the inorganic zinc oxide (ZnO) nanostructure films with controllable surface wettability are demonstrated in this work. The ZnO nanostructure films are deposited on the ITO- glass substrates by the two-steps hydrothermal process, and their wettability can be modified by annealing. Our experimental results show that the pretilt angles of LCs on ZnO nanostructure films can be successfully adjusted over a wide range from ~90° to ~0° as the surface energy on the ZnO nanostructure films changes from ~30 to ~70 mJ/m. Finally we have applied this technique to fabricate a no-bias optically-compensated bend (OCB) LCD with ZnO nanostructure films annealed at 235 °C.

  18. Method of fabricating vertically aligned group III-V nanowires

    DOEpatents

    Wang, George T; Li, Qiming

    2014-11-25

    A top-down method of fabricating vertically aligned Group III-V micro- and nanowires uses a two-step etch process that adds a selective anisotropic wet etch after an initial plasma etch to remove the dry etch damage while enabling micro/nanowires with straight and smooth faceted sidewalls and controllable diameters independent of pitch. The method enables the fabrication of nanowire lasers, LEDs, and solar cells.

  19. Oligo and Poly-thiophene/Zno Hybrid Nanowire Solar Cells

    SciTech Connect

    Briseno, Alejandro L.; Holcombe, Thomas W.; Boukai, Akram I.; Garnett, Erik C.; Shelton, Steve W.; Frechet, Jean J. M.; Yang, Peidong

    2009-11-03

    We demonstrate the basic operation of an organic/inorganic hybrid single nanowire solar cell. End-functionalized oligo- and polythiophenes were grafted onto ZnO nanowires to produce p-n heterojunction nanowires. The hybrid nanostructures were characterized via absorption and electron microscopy to determine the optoelectronic properties and to probe the morphology at the organic/inorganic interface. Individual nanowire solar cell devices exhibited well-resolved characteristics with efficiencies as high as 0.036percent, Jsc = 0.32 mA/cm2, Voc = 0.4 V, and a FF = 0.28 under AM 1.5 illumination with 100 mW/cm2 light intensity. These individual test structures will enable detailed analysis to be carried out in areas that have been difficult to study in bulk heterojunction devices.

  20. Catalyst free growth of ZnO nanowires on graphene and graphene oxide and its enhanced photoluminescence and photoresponse

    NASA Astrophysics Data System (ADS)

    Biroju, Ravi K.; Tilak, Nikhil; Rajender, Gone; Dhara, S.; Giri, P. K.

    2015-04-01

    We demonstrate the graphene assisted catalyst free growth of ZnO nanowires (NWs) on chemical vapor deposited (CVD) and chemically processed graphene buffer layers at a relatively low growth temperature (580 °C) in the presence and absence of ZnO seed layers. In the case of CVD graphene covered with rapid thermal annealed ZnO buffer layer, the growth of vertically aligned ZnO NWs takes place, while the direct growth on CVD graphene, chemically derived graphene (graphene oxide and graphene quantum dots) without ZnO seed layer resulted in randomly oriented sparse ZnO NWs. Growth mechanism was studied from high resolution transmission electron microscopy and Raman spectroscopy of the hybrid structure. Further, we demonstrate strong UV, visible photoluminescence (PL) and enhanced photoconductivity (PC) from the CVD graphene-ZnO NWs hybrids as compared to the ZnO NWs grown without the graphene buffer layer. The evolution of crystalinity in ZnO NWs grown with ZnO seed layer and graphene buffer layer is correlated with the Gaussian line shape of UV and visible PL. This is further supported by the strong Raman mode at 438 cm-1 significant for the wurtzite phase of the ZnO NWs grown on different graphene substrates. The effect of the thickness of ZnO seed layers and the role of graphene buffer layers on the aligned growth of ZnO NWs and its enhanced PC are investigated systematically. Our results demonstrate the catalyst free growth and superior performance of graphene-ZnO NW hybrid UV photodetectors as compared to the bare ZnO NW based photodetectors.

  1. Role of Au in the growth and nanoscale optical properties of ZnO nanowires

    SciTech Connect

    Brewster, M.; Zhou, Xiang; Lim, S. K.; Gradecak, S.

    2011-03-17

    Metallic nanoparticles play a crucial role in nanowire growth and have profound consequences on nanowire morphology and their physical properties. Here, we investigate the evolving role of the Au nanoparticle during ZnO nanowire growth and its effects on nanoscale photoemission of the nanowires. We observe the transition from Au-assisted to non-assisted growth mechanisms during a single nanowire growth, with significant changes in growth rates during these two regimes. This transition occurs through the reduction of oxygen partial pressure, which modifies the ZnO facet stability and increases Au diffusion. Nanoscale quenching of ZnO cathodoluminescence occurs near the Au nanoparticle due to excited electron diffusion to the nanoparticle. Thus, the Au nanoparticle is critically linked to the nanowire growth mechanism and corresponding growth rate through the energy of its interface with the ZnO nanowire, and its presence modifies nanowire optical properties on the nanoscale.

  2. Template-Assisted Hydrothermal Growth of Aligned Zinc Oxide Nanowires for Piezoelectric Energy Harvesting Applications

    PubMed Central

    2016-01-01

    A flexible and robust piezoelectric nanogenerator (NG) based on a polymer-ceramic nanocomposite structure has been successfully fabricated via a cost-effective and scalable template-assisted hydrothermal synthesis method. Vertically aligned arrays of dense and uniform zinc oxide (ZnO) nanowires (NWs) with high aspect ratio (diameter ∼250 nm, length ∼12 μm) were grown within nanoporous polycarbonate (PC) templates. The energy conversion efficiency was found to be ∼4.2%, which is comparable to previously reported values for ZnO NWs. The resulting NG is found to have excellent fatigue performance, being relatively immune to detrimental environmental factors and mechanical failure, as the constituent ZnO NWs remain embedded and protected inside the polymer matrix. PMID:27172933

  3. Localized ultraviolet photoresponse in single bent ZnO micro/nanowires

    SciTech Connect

    Guo Wen; Yang Ya; Qi Junjie; Zhao Jing; Zhang Yue

    2010-09-27

    The localized ultraviolet photoresponse in single bent ZnO micro/nanowires bridging two Ohmic contacts has been investigated. The ZnO micro/nanowire has a higher photoresponse sensitivity of about 190% at the bent region (bending strain: about 4%) than that at the straight region (about 50%). The rise and decay time constants are almost the same in the straight and bent regions of the ZnO micro/nanowire. A possible mechanism has been proposed and discussed. The bent ZnO micro/nanowires could be potentially useful for fabricating the coupled piezoelectric and optoelectronic nanodevices.

  4. Growth and optical properties of phosphorus-doped ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Kim, D. S.; Fallert, J.; Lotnyk, A.; Scholz, R.; Pippel, E.; Senz, S.; Kalt, H.; Gösele, U.; Zacharias, M.

    2007-09-01

    Single-crystal phosphorus-doped ZnO nanowires were synthesized by using a single-source precursor-based vapor transport method. The photoluminescence spectra of phosphorus-doped ZnO nanowires and undoped nanowires are compared. While both show several shallow bound exciton complexes, the phosphorus-doped nanowires reveal an additional distinct emission feature at 3.316 eV. Additionally, the time-resolved PL measurements were conducted to characterize the recombination dynamics.

  5. Paper-based, sound driven piezoelectric ZnO nanowire devices

    NASA Astrophysics Data System (ADS)

    Bu, Ian Yi-Yu

    2017-04-01

    Vertically aligned ZnO nanowire arrays on the paper substrate are integrated into a novel, sound-driven, piezoelectric nanogenerator device. The intrinsic impedance of the circuit causes phase differences between the input and output signals. For the input sound of around 40 db, an AC output voltage of about 5 mV is achieved. Because of the paper substrate allows the acoustic energy to dissipate, the fabricated device has detected a 4.88 db loss in the input sound signal.

  6. Dilute Magnetic Semiconductors from Electrodeposited ZnO Nanowires

    SciTech Connect

    Athavan, Nadarajah; Konenkamp, R.

    2011-02-02

    We present experimental results on the magnetic properties of doped ZnO nanowires grown at 80 8C in electrodeposition. We show that impurities such as Al, Mn, Co, and Cu can be incorporated in the nanowires by adding the corresponding metal salts to the electrolyte solution. At concentration levels of a few atomic percent we find the impurity concentration in the solid to be approximately proportional to the precursor concentration in solution. ZnO nanowrires doped with Cu, Co, and Mn show superparamagnetic response at room temperature, while undoped and Al-doped wires show no discernible magnetic response. The results indicate that with Cu, Mn, and Co doping dilute magnetic semiconductors can be prepared.

  7. Highly Ordered Vertical Arrays of TiO2/ZnO Hybrid Nanowires: Synthesis and Electrochemical Characterization.

    PubMed

    Gujarati, Tanvi P; Ashish, Ajithan G; Rai, Maniratnam; Shaijumon, Manikoth M

    2015-08-01

    We report the fabrication of vertically aligned hierarchical arrays of TiO2/ZnO hybrid nanowires, consisting of ZnO nanowires grown directly from within the pores of TiO2 nanotubes, through a combination of electrochemical anodization and hydrothermal techniques. These novel nano-architectured hybrid nanowires with its unique properties show promise as high performance supercapacitor electrodes. The electrochemical behaviour of these hybrid nanowires has been studied using Cyclic voltammetry, Galvanostatic charge-discharge and Electrochemical impedance spectroscopy (EIS) measurements using 1.5 M tetraethylammoniumtetrafluoroborate in acetonitrile as the electrolyte. Excellent electrochemical performances with a maximum specific capacitance of 2.6 mF cm-2 at a current density of 10 µA cm-2, along with exceptional cyclic stability, have been obtained for TiO2/ZnO-1 h hybrid material. The obtained results demonstrate the possibility of fabricating new geometrical architectures of inorganic hybrid nanowires with well adhered interfaces for the development of hybrid energy devices.

  8. Synthesis of high crystallinity ZnO nanowire array on polymer substrate and flexible fiber-based sensor.

    PubMed

    Liu, Jinmei; Wu, Weiwei; Bai, Suo; Qin, Yong

    2011-11-01

    Well aligned ZnO nanowire (NW) arrays are grown on Kevlar fiber and Kapton film via the chemical vapor deposition (CVD) method. These NWs have better crystallinity than those synthesized through the low-temperature hydrothermal method. The average length and diameter of ZnO NWs grown on Kevlar fiber can be controlled from 0.5 to 2.76 μm and 30 to 300 nm, respectively. A flexible ultraviolet (UV) sensor based on Kevlar fiber/ZnO NWs hybrid structure is made to detect UV illumination quantificationally.

  9. Angle-dependent photodegradation over ZnO nanowire arrays on flexible paper substrates.

    PubMed

    Lu, Ming-Yen; Tseng, Yen-Ti; Chiu, Cheng-Yao

    2014-01-01

    In this study, we grew zinc oxide (ZnO) nanowire arrays on paper substrates using a two-step growth strategy. In the first step, we formed single-crystalline ZnO nanoparticles of uniform size distribution (ca. 4 nm) as seeds for the hydrothermal growth of the ZnO nanowire arrays. After spin-coating of these seeds onto paper, we grew ZnO nanowire arrays conformally on these substrates. The crystal structure of a ZnO nanowire revealed that the nanowires were single-crystalline and had grown along the c axis. Further visualization through annular bright field scanning transmission electron microscopy revealed that the hydrothermally grown ZnO nanowires possessed Zn polarity. From photocatalytic activity measurements of the ZnO nanowire (NW) arrays on paper substrate, we extracted rate constants of 0.415, 0.244, 0.195, and 0.08 s(-1) for the degradation of methylene blue at incident angles of 0°, 30°, 60°, and 75°, respectively; that is, the photocatalytic activity of these ZnO nanowire arrays was related to the cosine of the incident angle of the UV light. Accordingly, these materials have promising applications in the design of sterilization systems and light-harvesting devices.

  10. Synthesis of ZnO nanowires and their applications as an ultraviolet photodetector.

    PubMed

    Lin, Chih-Cheng; Lin, Wang-Hua; Li, Yuan-Yao

    2009-05-01

    High purity ZnO nanowire arrays were synthesized uniformly on a 1.5 cm x 2 cm tin-doped indium oxide (ITO) glass substrate. The ZnO nanowire arrays were formed with a uniform diameter distribution of 30-50 nm and a length of about 5 microm, synthesized via thermal decomposition of zinc acetate at 300 degrees C in air. Analysis by X-ray diffraction and transmission electron microscopy showed that the ZnO nanowires are of single crystal structure with a preferred growth orientation of [001]. A study of the growth mechanism showed that it is a vapor-solid (VS) growth process. The synthesis of these nanowires begins with the processes of dehydration, vaporization, decomposition, and oxidation of the zinc acetate. Next, the ZnO clusters are deposited to form seeds that give rise to selective epitaxial growth of the ZnO nanowires. Optical analysis of ZnO nanowires was performed by UV-visible and fluorescence spectrophotometry, investigating both the photocurrent characteristics and UV photoresponse of the ZnO nanowire photodetectors. A study of optical properties showed that the as-produced ZnO nanowires have great potential as UV photodetectors/sensors.

  11. Nanomanufacturing Strategy for Aligned Assembly of Nanowire Arrays

    NASA Astrophysics Data System (ADS)

    Shin, Kyeong-Sik; Chui, Chi On

    2012-05-01

    The work reported here concerns a proposed nanomanufacturing strategy to assemble aligned quasi-one-dimensional nanostructure arrays with intrinsic and concurrent control over the resultant number, pitch, and linewidth. For the first time, a standard lithography and crystallographic etching approach have been combined to synthesize periodic, sublithographic, and line edge roughness (LER)-free surface arrays for selective conjugation of nanowires. Key experimental modules have been developed, including the formation of LER-free substrate arrays, formation of periodically dissimilar surfaces, selective conjugation of nanowires, and stamping transfer of nanowire arrays. In particular, successful assembly of Si nanowires onto periodic Si/SiO x surfaces and subsequent transfer of the resultant aligned Si nanowire arrays onto a different substrate surface have been repeatedly demonstrated. The dependences and probability of nanowire aligned assembly have also been examined. The proposed strategy is based on a wafer-scale and very large-scale integration (VLSI)-compatible philosophy, and alignment to pre-existing features on the target substrate is also inherently allowed as a side benefit. Besides, LER-free features could be created, which arguably enables extreme linewidth scaling with suppressed variations.

  12. Thiol-capped ZnO nanowire/nanotube arrays with tunable magnetic properties at room temperature.

    PubMed

    Deng, Su-Zi; Fan, Hai-Ming; Wang, Miao; Zheng, Min-Rui; Yi, Jia-Bao; Wu, Rong-Qin; Tan, Hui-Ru; Sow, Chorng-Haur; Ding, Jun; Feng, Yuan-Ping; Loh, Kian-Ping

    2010-01-26

    The present study reports room-temperature ferromagnetic behaviors in three-dimensional (3D)-aligned thiol-capped single-crystalline ZnO nanowire (NW) and nanotube (NT) arrays as well as polycrystalline ZnO NT arrays. Besides the observation of height-dependent saturation magnetization, a much higher M(s) of 166 microemu cm(-2) has been found in NTs compared to NWs (36 microemu cm(-2)) due to larger surface area in ZnO NTs, indicating morphology-dependent magnetic properties in ZnO NW/NT systems. Density functional calculations have revealed that the origin of ferromagnetism is mainly attributed to spin-polarized 3p electrons in S sites and, therefore, has a strong correlation with Zn-S bond anisotropy. The preferential magnetization direction of both single-crystalline NTs and NWs lies perpendicular to the tube/wire axis due to the aligned high anisotropy orientation of the Zn-S bonds on the lateral (100) face of ZnO NWs and NTs. Polycrystalline ZnO NTs, however, exhibit a preferential magnetization direction parallel to the tube axis which is ascribed to shape anisotropy dominating the magnetic response. Our results demonstrate the interplay of morphology, dimensions, and crystallinity on spin alignment and magnetic anisotropy in a 3D semiconductor nanosystem with interfacial magnetism.

  13. Room temperature sputter deposited catalyst-free nanowires with wurtzite/zinc blende ZnO superstructure and their application in electromechanical nanogenerators on polymer and paper substrates.

    PubMed

    Borysiewicz, M A; Gryglas-Borysiewicz, M; Masłyk, M; Wojciechowski, T; Wzorek, M; Kaczmarski, J; Wojtowicz, T; Kamińska, E

    2017-02-24

    Catalyst-free growth of ZnO nanowires using reactive magnetron sputtering at room temperature is reported. We discuss the growth of the nanowires using reactive magnetron sputtering as a function of argon and oxygen flow values changing at a set ratio of 10:2. A transition from nanostructured Zn to nanowire ZnO growth is observed at 20 sccm Ar and 4 sccm O2. Densification and improved alignment of the nanowires is visible for increasing flow values up to 50 sccm Ar and 10 sccm O2. Nanowires exhibit stacking fault regions of zinc blende ZnO in wurtzite ZnO. The regions encompass the whole width of the nanowires and their quantum well behavior is manifested in the photoluminescence spectra. The nanowires were subsequently deposited on paper and PET substrates and electromechanical nanogenerators were fabricated. Manual pressing and depressing of the devices induced voltages of 50 μV and 2 μV for the devices on PET and paper substrates, respectively.

  14. Room temperature sputter deposited catalyst-free nanowires with wurtzite/zinc blende ZnO superstructure and their application in electromechanical nanogenerators on polymer and paper substrates

    NASA Astrophysics Data System (ADS)

    Borysiewicz, M. A.; Gryglas-Borysiewicz, M.; Masłyk, M.; Wojciechowski, T.; Wzorek, M.; Kaczmarski, J.; Wojtowicz, T.; Kamińska, E.

    2017-02-01

    Catalyst-free growth of ZnO nanowires using reactive magnetron sputtering at room temperature is reported. We discuss the growth of the nanowires using reactive magnetron sputtering as a function of argon and oxygen flow values changing at a set ratio of 10:2. A transition from nanostructured Zn to nanowire ZnO growth is observed at 20 sccm Ar and 4 sccm O2. Densification and improved alignment of the nanowires is visible for increasing flow values up to 50 sccm Ar and 10 sccm O2. Nanowires exhibit stacking fault regions of zinc blende ZnO in wurtzite ZnO. The regions encompass the whole width of the nanowires and their quantum well behavior is manifested in the photoluminescence spectra. The nanowires were subsequently deposited on paper and PET substrates and electromechanical nanogenerators were fabricated. Manual pressing and depressing of the devices induced voltages of 50 μV and 2 μV for the devices on PET and paper substrates, respectively.

  15. Effect of intrinsic point defect on the magnetic properties of ZnO nanowire.

    PubMed

    Yun, Jiangni; Zhang, Zhiyong; Yin, Tieen

    2013-01-01

    The effect of intrinsic point defect on the magnetic properties of ZnO nanowire is investigated by the first-principles calculation based on the density functional theory (DFT). The calculated results reveal that the pure ZnO nanowire without intrinsic point defect is nonmagnetic and ZnO nanowire with V(O), Zn(i), O(i), O(Zn), or Zn(O) point defect also is nonmagnetic. However, a strong spin splitting phenomenon is observed in ZnO nanowire with V(Zn) defect sitting on the surface site. The Mulliken population analysis reveals that the oxygen atoms which are close to the V(Zn) defect do major contribution to the magnetic moment. Partial density states calculation further suggests that the appearance of the half-metallic ferromagnetism in ZnO nanorod with V(Zn) originates from the hybridization of the O2p states with Zn 3d states.

  16. Energy harvesting from vertically aligned PZT nanowire arrays

    NASA Astrophysics Data System (ADS)

    Malakooti, Mohammad H.; Zhou, Zhi; Sodano, Henry A.

    2016-04-01

    In this paper, a nanostructured piezoelectric beam is fabricated using vertically aligned lead zirconate titanate (PZT) nanowire arrays and its capability of continuous power generation is demonstrated through direct vibration tests. The lead zirconate titanate nanowires are grown on a PZT thin film coated titanium foil using a hydrothermal reaction. The PZT thin film serves as a nucleation site while the titanium foil is used as the bottom electrode. Electromechanical frequency response function (FRF) analysis is performed to evaluate the power harvesting efficiency of the fabricated device. Furthermore, the feasibility of the continuous power generation using the nanostructured beam is demonstrated through measuring output voltage from PZT nanowires when beam is subjected to a sinusoidal base excitation. The effect of tip mass on the voltage generation of the PZT nanowire arrays is evaluated experimentally. The final results show the great potential of synthesized piezoelectric nanowire arrays in a wide range of applications, specifically power generation at nanoscale.

  17. Efficient nitrogen incorporation in ZnO nanowires

    PubMed Central

    Stehr, Jan E.; Chen, Weimin M.; Reddy, Nandanapalli Koteeswara; Tu, Charles W.; Buyanova, Irina A.

    2015-01-01

    One-dimensional ZnO nanowires (NWs) are a promising materials system for a variety of applications. Utilization of ZnO, however, requires a good understanding and control of material properties that are largely affected by intrinsic defects and contaminants. In this work we provide experimental evidence for unintentional incorporation of nitrogen in ZnO NWs grown by rapid thermal chemical vapor deposition, from electron paramagnetic resonance spectroscopy. The incorporated nitrogen atoms are concluded to mainly reside at oxygen sites (NO). The NO centers are suggested to be located in proximity to the NW surface, based on their reduced optical ionization energy as compared with that in bulk. This implies a lower defect formation energy at the NW surface as compared with its bulk value, consistent with theoretical predictions. The revealed facilitated incorporation of nitrogen in ZnO nanostructures may be advantageous for realizing p-type conducting ZnO via N doping. The awareness of this process can also help to prevent such unintentional doping in structures with desired n-type conductivity. PMID:26299157

  18. Light trapping in ZnO nanowire arrays covered with an absorbing shell for solar cells.

    PubMed

    Michallon, Jérôme; Bucci, Davide; Morand, Alain; Zanuccoli, Mauro; Consonni, Vincent; Kaminski-Cachopo, Anne

    2014-06-30

    The absorption properties of ZnO nanowire arrays covered with a semiconducting absorbing shell for extremely thin absorber solar cells are theoretically investigated by optical computations of the ideal short-circuit current density with three-dimensional rigorous coupled wave analysis. The effects of nanowire geometrical dimensions on the light trapping and absorption properties are reported through a comprehensive optical mode analysis. It is shown that the high absorptance of these heterostructures is driven by two different regimes originating from the combination of individual nanowire effects and nanowire arrangement effects. In the short wavelength regime, the absorptance is likely dominated by optical modes efficiently coupled with the incident light and interacting with the nearby nanowires (i.e. diffraction), induced by the period of core shell ZnO nanowire arrays. In contrast, in the long wavelength regime, the absorptance is governed by key optically guided modes, related to the diameter of individual core shell ZnO nanowires.

  19. Excitonic effects in ZnO nanowires and hollow nanotubes

    NASA Astrophysics Data System (ADS)

    Willander, M.; Lozovik, Y. E.; Zhao, Q. X.; Nur, O.; Hu, Q.-H.; Klason, P.

    2007-02-01

    Energy levels and wave functions of ground and excited states of an exciton are calculated by the method of imaginary time. Energy levels as functions of radius of single and double wall nanotube are studied. Asymptotic behavior of energy levels at large and small values of the radius using perturbation theory and adiabatic approximation is considered. Spatially indirect exciton in semiconductor nanowire is also investigated. Experimental result from high quality reproducible ZnO nanowires grown by low temperature chemical engineering is presented. State of the art high brightness white light emitting diodes (HB-LEDs) are demonstrated from the grown ZnO nano-wires. The color temperature and color rendering index (CRI) of the HB-LEDs values was found to be (3250 K, 82), and (14000 K, 93), for the best LEDs, which means that the quality of light is superior to one obtained from GaN LEDs available on the market today. The role of V Zn and V ° on the emission responsible for the white light band as well as the peak position of this important wide band is thoroughly investigated in a systematic way.

  20. Ammonia plasma modification towards a rapid and low temperature approach for tuning electrical conductivity of ZnO nanowires on flexible substrates.

    PubMed

    Ong, Wei Li; Zhang, Chun; Ho, Ghim Wei

    2011-10-05

    Though the fabrication of ZnO nanostructures is economical and low temperature, the lack of a facile, reliable and low temperature methodology to tune its electrical conductivity has prevented it from competing with other semiconductors. Here, we carried out surface modification of ZnO nanowires using ammonia plasma with no heat treatment, and studied their electrical properties over an extended time frame of more than a year. The fabrication of flexible devices was demonstrated via various methods of transferring and aligning as-synthesized ZnO nanowires onto plastic substrates. Hall measurements of the plasma modified ZnO nanowires revealed p-type conductivity. The N1s peak was present in the X-ray photoelectron spectrum of the surface modified ZnO, showing the presence of ammonia complexes. Low temperature photoluminescence showed evidence of acceptor-bound exciton emission. The resulting electrical devices, a chemical sensor and p-n homojunction, show the tunable electrical response of the surface modified ZnO nanowires.

  1. On the difficulties in characterizing ZnO nanowires.

    PubMed

    Schlenker, E; Bakin, A; Weimann, T; Hinze, P; Weber, D H; Gölzhäuser, A; Wehmann, H-H; Waag, A

    2008-09-10

    The electrical properties of single ZnO nanowires grown by vapor phase transport were investigated. While some samples were contacted by Ti/Au electrodes, another set of samples was investigated using a manipulator tip in a low energy electron point-source microscope. The deduced resistivities range from 1 to 10(3) Ωcm. Additionally, the resistivities of nanowires from multiple publications were brought together and compared to the values obtained from our measurements. The overview of all data shows enormous differences (10(-3)-10(5) Ωcm) in the measured resistivities. In order to reveal the origin of the discrepancies, the influence of growth parameters, measuring methods, contact resistances, crystal structures and ambient conditions are investigated and discussed in detail.

  2. Synthesis of Fe Doped ZnO Nanowire Arrays that Detect Formaldehyde Gas.

    PubMed

    Jeon, Yoo Sang; Seo, Hyo Won; Kim, Su Hyo; Kim, Young Keun

    2016-05-01

    Owing to their chemical and thermal stability and doping effects on providing electrons to the conduction band, doped ZnO nanowires have generated interest for use in electronic devices. Here we report hydrothermally grown Fe-doped ZnO nanowires and their gas-sensing properties. The synthesized nanowires have a high crystallinity and are 60 nm in diameter and 1.7 μm in length. Field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) are employed to understand the doping effects on the microstructures and gas sensing properties. When the Fe-doped ZnO nanowire arrays were evaluated for gas sensing, responses were recorded through changes in temperature and gas concentration. Gas sensors consisting of ZnO nanowires doped with 3-5 at.% Fe showed optimum formaldehyde (HCHO) sensing performance at each working temperature.

  3. Optical modulation of persistent photoconductivity in ZnO nanowires

    SciTech Connect

    Wang Yao; Liao Zhaoliang; Chen Dongmin; She Guangwei; Mu Lixuan; Shi Wensheng

    2011-05-16

    In this study, ZnO nanowires (ZNWs)-based optoelectric devices are found to exhibit strong persistent photoconductivity (PPC) effect. An optical modulation on the PPC effect of the ZNWs with 980 nm infrared (IR) laser has been investigated. It was found that the decay time for the PPC can be significantly shortened by IR irradiation. The modulation mechanism related with the oxygen vacancies and the subband gap excitation is proposed. Based on this mechanism, the modulation behavior of the IR can be well explained. The present optical modulation on the PPC is suggested to have potential applications in enhancing the performance of ZnO-based photodetectors.

  4. A controllable interface performance through varying ZnO nanowires dimensions on the carbon fibers

    NASA Astrophysics Data System (ADS)

    Wang, Ben; Duan, Yugang; Zhang, Jingjing

    2016-12-01

    The fiber/matrix interface was reinforced by introducing nanostructure on the fiber surface, which enlarged the interphase area for stress transfer across the interface. To study the relationship between the interphase area and the interface performance, a low-temperature method for varying the dimensions of ZnO nanowires grown on the carbon fiber surface was proposed. The surface area with ZnO nanowires introduced was controlled by the conditions for growth: ultrasonic dispersion time, reaction time and Polyethylene glycol concentration. The effects of that varying ZnO the nanowires dimensions on interface performance was evaluated using wettability test and interfacial shear strength (IFSS). ZnO nanowires affect the liquid-motion on the fiber surface, and a shift to hydrophobicity was observed with decreasing the surface coverage of ZnO nanowires. A nonlinear relationship between IFSS and the ratio of the area of the introduced ZnO nanowires suggested unfavorable wettability impeded resin infiltration into ZnO nanowires.

  5. Localized joule heating as a mask-free technique for the local synthesis of ZnO nanowires on silicon nanodevices.

    PubMed

    Chen, C C; Lin, Y S; Sang, C H; Sheu, J-T

    2011-11-09

    We report a mask-free technique for the local synthesis of ZnO nanowires (NWs) on polysilicon nanobelts and polysilicon NW devices. First, we used localized joule heating to generate a poly(methyl methacrylate) (PMMA) nanotemplate, allowing the rapid and self-aligned ablation of PMMA within a short period of time (ca. 5 μs). Next, we used ion-beam sputtering to prepare an ultrathin Au film and a ZnO seed layer; a subsequent lift-off process left the seed layers selectively within the PMMA nanotemplate. Gold nanoparticles and ZnO NWs were formed selectively in the localized joule heating region.

  6. Effect of gaseous atmosphere on photoinduced water wetting of ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Yadav, Kavita; Mehta, B. R.; Singh, J. P.

    2016-05-01

    ZnO nanowires were synthesized by using chemical vapor deposition system at 1000°C temperature. The as synthesized ZnO nanowires show superhydrophilic nature with water contact angle value of 0°. After dark storage for about 50 days, the nanowires show superhydrophobic nature with contact angle value of about 155°. When these nanowires were exposed to ultraviolet light in air atmosphere, the nanowires becomes superhydrophilic. It was found that the rate of change of contact angle depends on the gases atmosphere during UV light illumination. The rate of change of contact angle with UV light illumination is higher in presence of oxygen gas whereas it is very slow in presence of hydrogen gas. Possible mechanism for the dependence of photo induced water wetting on ZnO nanowires in gaseous atmosphere is discussed.

  7. Enhanced photocatalytic activity of ultra-high aspect ratio ZnO nanowires due to Cu induced defects

    NASA Astrophysics Data System (ADS)

    Pasupathi Sugavaneshwar, Ramu; Duy Dao, Thang; Nanda, Karuna Kar; Nagao, Tadaaki; Hishita, Shunichi; Sakaguchi, Isao

    2015-12-01

    We report the synthesis of ZnO nanowires in ambient air at 650°C by a single-step vapor transport method using two different sources Zn (ZnO nanowires-I) and Zn:Cu (ZnO nanowires-II). The Zn:Cu mixed source co-vaporize Zn with a small amount of Cu at temperatures where elemental Cu source does not vaporize. This method provides us a facile route for Cu doping into ZnO. The aspect ratio of the grown ZnO nanowires-II was found to be higher by more than five times compared ZnO nanowires-I. Photocatalytic activity was measured by using a solar simulator and its ultraviolet-filtered light. The ZnO nanowires-II shows higher catalytic activity due to increased aspect ratio and higher content of surface defects because of incorporation of Cu impurities.

  8. Optical and morphological properties of graphene sheets decorated with ZnO nanowires via polyol enhancement

    SciTech Connect

    Sharma, Vinay Rajaura, Rajveer Singh; Sharma, Preetam K.; Srivastava, Subodh; Vijay, Y. K.; Sharma, S. S.

    2014-04-24

    Graphene-ZnO nanocomposites have proven to be very useful materials for photovoltaic and sensor applications. Here, we report a facile, one-step in situ polymerization method for synthesis of graphene sheets randomly decorated with zinc oxide nanowires using ethylene glycol as solvent. We have used hydrothermal treatment for growth of ZnO nanowires. UV-visible spectra peak shifting around 288nm and 307 nm shows the presence of ZnO on graphene structure. Photoluminiscence spectra (PL) in 400nm-500nm region exhibits the luminescence quenching effect. Scanning electron microscopy (SEM) image confirms the growth of ZnO nanowires on graphene sheets.

  9. Controlled Growth of Parallel Oriented ZnO Nanostructural Arrays on Ga2O3 Nanowires

    DTIC Science & Technology

    2008-11-01

    been obtained by growth of ZnO ,10-13 Ga2O3, 14 SnO2 , 15 and GaAs16 nanorod branches symmetrically around the nanowire (NW) cores composed of materials...Controlled Growth of Parallel Oriented ZnO Nanostructural Arrays on Ga2O3 Nanowires Lena Mazeina,* Yoosuf N. Picard, and Sharka M. Prokes Electronics...Manuscript ReceiVed NoVember 6, 2008 ABSTRACT: Novel hierarchical ZnO -Ga2O3 nanostructures were fabricated via a two stage growth process. Nanowires of Ga2O3

  10. A low-temperature ZnO nanowire ethanol gas sensor prepared on plastic substrate

    NASA Astrophysics Data System (ADS)

    Lin, Chih-Hung; Chang, Shoou-Jinn; Hsueh, Ting-Jen

    2016-09-01

    In this work, a low-temperature ZnO nanowire ethanol gas sensor was prepared on plastic substrate. The operating temperature of the ZnO nanowire ethanol gas sensor was reduced to room temperature using ultraviolet illumination. The experimental results indicate a favorable sensor response at low temperature, with the best response at 60 °C. The results also reveal that the ZnO nanowire ethanol gas sensor can be easily integrated into portable products, whose waste heat can improve sensor response and achieve energy savings, while energy consumption can be further reduced by solar irradiation.

  11. Ultraviolet photodetection of flexible ZnO nanowire sheets in polydimethylsiloxane polymer

    PubMed Central

    Motta, Nunzio; Lee, Soonil

    2012-01-01

    Summary ZnO nanowires are normally exposed to an oxygen atmosphere to achieve high performance in UV photodetection. In this work we present results on a UV photodetector fabricated using a flexible ZnO nanowire sheet embedded in polydimethylsiloxane (PDMS), a gas-permeable polymer, showing reproducible UV photoresponse and enhanced photoconduction. PDMS coating results in a reduced response speed compared to that of a ZnO nanowire film in air. The rising speed is slightly reduced, while the decay time is prolonged by about a factor of four. We conclude that oxygen molecules diffusing in PDMS are responsible for the UV photoresponse. PMID:23016139

  12. Finite element method calculations of ZnO nanowires for nanogenerators

    NASA Astrophysics Data System (ADS)

    Schubert, M. A.; Senz, S.; Alexe, M.; Hesse, D.; Gösele, U.

    2008-03-01

    The bending of a nonconducting piezoelectric ZnO nanowire is simulated by finite element method calculations. The top part is bent by a lateral force, which could be applied by an atomic force microscope tip. The generated electrical potential is ±0.3V. This relatively high signal is, however, difficult to measure due to the low capacitance of the ZnO nanowire (˜4×10-5pF) as compared to the capacitance of most preamplifiers (˜5pF). A further problem arises from the semiconducting properties of experimentally fabricated ZnO nanowires which causes the disappearance of the voltage signal within picoseconds.

  13. Hierarchically assembled ZnO nanoparticles on high diffusion coefficient ZnO nanowire arrays for high efficiency dye-sensitized solar cells.

    PubMed

    Chen, Liang-Yih; Yin, Yu-Tung

    2013-03-07

    In this study, ZnO nanoparticles (ZnO NPs) were conformally covered on the surfaces of ZnO nanowires (ZnO NWs) with high diffusion coefficient (1.2 × 10(-2) cm(2) s(-1)) to make a composite photoanode. By using N719 to sensitize the composite photoanode, the conversion efficiency can reach 7.14%.

  14. CMOS Alcohol Sensor Employing ZnO Nanowire Sensing Films

    NASA Astrophysics Data System (ADS)

    Santra, S.; Ali, S. Z.; Guha, P. K.; Hiralal, P.; Unalan, H. E.; Dalal, S. H.; Covington, J. A.; Milne, W. I.; Gardner, J. W.; Udrea, F.

    2009-05-01

    This paper reports on the utilization of zinc oxide nanowires (ZnO NWs) on a silicon on insulator (SOI) CMOS micro-hotplate for use as an alcohol sensor. The device was designed in Cadence and fabricated in a 1.0 μm SOI CMOS process at XFAB (Germany). The basic resistive gas sensor comprises of a metal micro-heater (made of aluminum) embedded in an ultra-thin membrane. Gold plated aluminum electrodes, formed of the top metal, are used for contacting with the sensing material. This design allows high operating temperatures with low power consumption. The membrane was formed by using deep reactive ion etching. ZnO NWs were grown on SOI CMOS substrates by a simple and low-cost hydrothermal method. A few nanometer of ZnO seed layer was first sputtered on the chips, using a metal mask, and then the chips were dipped in a zinc nitrate hexahydrate and hexamethylenetramine solution at 90° C to grow ZnO NWs. The chemical sensitivity of the on-chip NWs were studied in the presence of ethanol (C2H5OH) vapour (with 10% relative humidity) at two different temperatures: 200 and 250° C (the corresponding power consumptions are only 18 and 22 mW). The concentrations of ethanol vapour were varied from 175-1484 ppm (pers per million) and the maximum response was observed 40% (change in resistance in %) at 786 ppm at 250° C. These preliminary measurements showed that the on-chip deposited ZnO NWs could be a promising material for a CMOS based ethanol sensor.

  15. A ZnO nanowire bio-hybrid solar cell

    NASA Astrophysics Data System (ADS)

    Yaghoubi, Houman; Schaefer, Michael; Yaghoubi, Shayan; Jun, Daniel; Schlaf, Rudy; Beatty, J. Thomas; Takshi, Arash

    2017-02-01

    Harvesting solar energy as a carbon free source can be a promising solution to the energy crisis and environmental pollution. Biophotovoltaics seek to mimic photosynthesis to harvest solar energy and to take advantage of the low material costs, negative carbon footprint, and material abundance. In the current study, we report on a combination of zinc oxide (ZnO) nanowires with monolayers of photosynthetic reaction centers which are self-assembled, via a cytochrome c linker, as photoactive electrode. In a three-probe biophotovoltaics cell, a photocurrent density of 5.5 μA cm-2 and photovoltage of 36 mV was achieved, using methyl viologen as a redox mediator in the electrolyte. Using ferrocene as a redox mediator a transient photocurrent density of 8.0 μA cm-2 was obtained, which stabilized at 6.4 μA cm-2 after 20 s. In-depth electronic structure characterization using photoemission spectroscopy in conjunction with electrochemical analysis suggests that the fabricated photoactive electrode can provide a proper electronic path for electron transport all the way from the conduction band of the ZnO nanowires, through the protein linker to the RC, and ultimately via redox mediator to the counter electrode.

  16. A ZnO nanowire bio-hybrid solar cell.

    PubMed

    Yaghoubi, Houman; Schaefer, Michael; Yaghoubi, Shayan; Jun, Daniel; Schlaf, Rudy; Beatty, J Thomas; Takshi, Arash

    2017-02-03

    Harvesting solar energy as a carbon free source can be a promising solution to the energy crisis and environmental pollution. Biophotovoltaics seek to mimic photosynthesis to harvest solar energy and to take advantage of the low material costs, negative carbon footprint, and material abundance. In the current study, we report on a combination of zinc oxide (ZnO) nanowires with monolayers of photosynthetic reaction centers which are self-assembled, via a cytochrome c linker, as photoactive electrode. In a three-probe biophotovoltaics cell, a photocurrent density of 5.5 μA cm(-2) and photovoltage of 36 mV was achieved, using methyl viologen as a redox mediator in the electrolyte. Using ferrocene as a redox mediator a transient photocurrent density of 8.0 μA cm(-2) was obtained, which stabilized at 6.4 μA cm(-2) after 20 s. In-depth electronic structure characterization using photoemission spectroscopy in conjunction with electrochemical analysis suggests that the fabricated photoactive electrode can provide a proper electronic path for electron transport all the way from the conduction band of the ZnO nanowires, through the protein linker to the RC, and ultimately via redox mediator to the counter electrode.

  17. Resistive switching characteristics of ZnO nanowires.

    PubMed

    Yoo, Eun Ji; Shin, Il Kwon; Yoon, Tae Sik; Choi, Young Jin; Kang, Chi Jung

    2014-12-01

    Binary transition metal oxides such as ZnO, TiO2, and MnO; and their various structures such as thin film, nanowire, and nanoparticle assembly; have been widely investigated for use in insulators in resistive random access memory (ReRAM), considered a next-generation nonvolatile memory device. Among the various driving mechanisms of resistive switching in insulating materials, the conductive filament model is one of the most widely accepted. Studies on spatially confined structures such as one-dimensional nanostructures and zero-dimensional nanoparticles to reveal the detailed filament constructing mechanism are warranted because low-dimensional nanostructures can provide more localized properties with a narrow dispersion of operational parameter values compared with thin-film structures. We investigated the resistive switching characteristics of ZnO nanowire (NW) structures. The NWs were grown on an Au/Ti/SiO2/Si substrate via the hydrothermal method. The empty space between the top and bottom electrodes was filled with a photoresist to prevent direct connection between the electrodes. The top electrode (Cr) and bottom electrode (Au), both with a thickness of -100 nm, were deposited by DC sputtering. The current-voltage (I-V) measurements were performed using a semiconductor characterization system. Additionally, the local current image and the point I-V characteristics for each NW were examined by replacing the top electrode with a conducting atomic force microscope tip. The Au-ZnO NW-Cr devices exhibited bipolar resistive switching behavior.

  18. Rapid large-scale preparation of ZnO nanowires for photocatalytic application

    PubMed Central

    2011-01-01

    ZnO nanowires are a promising nanomaterial for applications in the fields of photocatalysis, nano-optoelectronics, and reinforced composite materials. However, the challenge of producing large-scale ZnO nanowires has stunted the development and practical utilization of ZnO nanowires. In this study, a modified carbothermal reduction method for preparing large-scale ZnO nanowires in less than 5 min is reported. The preparation was performed in a quartz tube furnace at atmospheric pressure without using any catalysts. A mixed gas of air and N2 with a volume ratio of 45:1 was used as the reactive and carrier gas. About 0.8 g ZnO nanowires was obtained using 1 g ZnO and 1 g graphite powder as source materials. The obtained nanowires exhibited a hexagonal wurtzite crystal structure with an average diameter of about 33 nm. Good photocatalytic activity of the nanowires toward the photodegradation of methylene blue dye under UV irradiation was also demonstrated. PMID:21968032

  19. Realizing field-dependent conduction in ZnO nanowires without annealing.

    PubMed

    Burke-Govey, C P; Castanet, U; Warring, H; Nau, A; Ruck, B J; Majimel, J; Plank, N O V

    2017-03-24

    We report on the low-temperature fabrication of field-effect transistors by bridging pre-patterned electrodes using ZnO nanowires grown in situ, which operate without requiring post-growth processing or annealing. The devices show good performance using as-grown nanowires, with on-off ratios of 10(5) and threshold voltages of 2 V. Electron microscopy shows the field-dependent nanowires hierarchically nucleate from larger ZnO nanorods, and both are oriented along a common c-axis. A high nanowire surface-to-volume ratio allows depleting electron traps on the nanowire surface to compensate intrinsic electron donors present throughout the nanowire bulk. This eliminates the need to reduce the electron concentration through high-temperature annealing, making the nanowires naturally field-dependent in their as-grown state.

  20. Realizing field-dependent conduction in ZnO nanowires without annealing

    NASA Astrophysics Data System (ADS)

    Burke-Govey, C. P.; Castanet, U.; Warring, H.; Nau, A.; Ruck, B. J.; Majimel, J.; Plank, N. O. V.

    2017-03-01

    We report on the low-temperature fabrication of field-effect transistors by bridging pre-patterned electrodes using ZnO nanowires grown in situ, which operate without requiring post-growth processing or annealing. The devices show good performance using as-grown nanowires, with on–off ratios of 105 and threshold voltages of 2 V. Electron microscopy shows the field-dependent nanowires hierarchically nucleate from larger ZnO nanorods, and both are oriented along a common c-axis. A high nanowire surface-to-volume ratio allows depleting electron traps on the nanowire surface to compensate intrinsic electron donors present throughout the nanowire bulk. This eliminates the need to reduce the electron concentration through high-temperature annealing, making the nanowires naturally field-dependent in their as-grown state.

  1. "Spontaneous Growth of ZnCO3 Nanowires on ZnO Nanostructures in Normal Ambient Environment: Unstable ZnO Nanostructures:

    SciTech Connect

    Pan, Zhengwei; Tao, Jing; Zhu, Yimei; Huang, Jing-Fang; Paranthaman, Mariappan Parans

    2010-01-01

    ZnO nanowires, one of the most investigated nanostructures that promise numerous applications in nanophotonics, opto-electronics, and energy, are generally thought to be highly stable under ambient conditions because of their oxide nature. Here, we report that ZnO nanowires are actually extremely unstable even in normal ambient environment (70% RH, and 350 ppm CO2) because of atmospheric corrosion.When placed on an oxide substrate (e.g., glass slide) and exposed in air, ZnO nanowires tend to react with airborne moisture and CO2 to form amorphous ZnCO3 thin films and nanowires. The factors that specially affect the corrosion of ZnO nanowires in a laboratory environment include CO2, humidity, and substrates. Our results suggest that a CO2- and/or moisture-free environment are required in order for optimal applications of ZnO nanowires.

  2. Spontaneous Growth of ZnCO3 Nanowires on ZnO Nanostructures in Normal Ambient Environment: Unstable ZnO Nanostructures

    SciTech Connect

    Pan, Z.; Tao, J.; Zhu, Y.; Huang, J.-F.; Paranthaman, M.P.

    2009-12-09

    ZnO nanowires, one of the most investigated nanostructures that promise numerous applications in nanophotonics, opto-electronics, and energy, are generally thought to be highly stable under ambient conditions because of their oxide nature. Here, we report that ZnO nanowires are actually extremely unstable even in normal ambient environment (70% RH, and {approx}350 ppm CO{sub 2}) because of atmospheric corrosion. When placed on an oxide substrate (e.g., glass slide) and exposed in air, ZnO nanowires tend to react with airborne moisture and CO{sub 2} to form amorphous ZnCO{sub 3} thin films and nanowires. The factors that specially affect the corrosion of ZnO nanowires in a laboratory environment include CO{sub 2}, humidity, and substrates. Our results suggest that a CO{sub 2}{sup -} and/or moisture-free environment are required in order for optimal applications of ZnO nanowires.

  3. Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition

    DOEpatents

    Han, Jung; Su, Jie

    2008-08-05

    Highly ordered and aligned epitaxy of III-Nitride nanowires is demonstrated in this work. <1010> M-axis is identified as a preferential nanowire growth direction through a detailed study of GaN/AlN trunk/branch nanostructures by transmission electron microscopy. Crystallographic selectivity can be used to achieve spatial and orientational control of nanowire growth. Vertically aligned (Al)GaN nanowires are prepared on M-plane AlN substrates. Horizontally ordered nanowires, extending from the M-plane sidewalls of GaN hexagonal mesas or islands demonstrate new opportunities for self-aligned nanowire devices, interconnects, and networks.

  4. Nanoscale piezoelectric response of ZnO nanowires measured using a nanoindentation technique.

    PubMed

    Broitman, Esteban; Soomro, Muhammad Yousuf; Lu, Jun; Willander, Magnus; Hultman, Lars

    2013-07-14

    We report the piezoelectric properties of ZnO nanowires (NWs) obtained by using a nanoindenter with a conductive boron-doped diamond tip. The direct piezoelectric effect was measured by performing nanoindentations under load control, and the generated piezoelectric voltage was characterized as a function of the applied loads in the range 0.2-6 mN. The converse piezoelectric effect was measured by applying a DC voltage to the sample while there was a low applied force to allow the tip being always in physical contact with the NWs. Vertically aligned ZnO NWs were grown on inexpensive, flexible, and disposable paper substrates using a template-free low temperature aqueous chemical growth method. When using the nanoindenter to measure the direct piezoelectric effect, piezopotential values of up to 26 mV were generated. Corresponding measurement of the converse piezoelectric effect gave an effective piezoelectric coefficient d33(eff) of ∼9.2 pm V(-1). The ZnO NWs were also characterized using scanning electron microscopy, X-ray diffraction, and high-resolution transmission electron microscopy. The new nanoindentation approach provides a straightforward method to characterize piezoelectric material deposited on flexible and disposable substrates for the next generation of nanodevices.

  5. Optical and piezoelectric properties of p-type ZnO nanowires on transparent flexible substrate for energy harvesting

    NASA Astrophysics Data System (ADS)

    Liu, Guocheng; Tam, Man Chun; Hu, Lilei; EI-Rayes, Karim; Guo, Qiuquan; Yang, Jun; Mrad, Nezih; Ban, Dayan

    2014-09-01

    High quality, controlled-structure nanowires (NWs), grown on a transparent flexible substrate, have attracted great interest as a mean of harvesting solar and mechanical energy. Clarifying their optical and piezoelectric properties is essential for this application. In this paper, vertically aligned lithium (Li) doped p-type ZnO NWs were grown, on a micro-patterned transparent flexible polyethylene naphthalate (PEN) substrate, by electrochemical deposition at 88 °C. The substrate was coated with aluminum-doped ZnO (AZO) thin layer, which served as a good seed layer and a transparent conductive oxide layer. Varying the seed layer thickness gave control of the individual NWs' diameter, density and alignment. The effect of doping on the optical band-gap, crystalline quality and Schottky barrier were investigated by X-ray diffraction (XRD) spectroscopy and piezoelectric characterization. The piezoelectric polarization induced piezo-potential in strained ZnO NWs can drive the flow of electrons without an applied electric bias, thus can be used to harvest mechanical energy and convert it into electricity. To prove this concept, flexible piezoelectric energy harvesters based on an array of ZnO NWs were fabricated. Results show that the patterned p-type NW-based energy harvester produces 26-fold output voltage and 19-fold current compared to the conventional un-doped ZnO NW energy harvester from the same acceleration input.

  6. InGaN-based photoanode with ZnO nanowires for water splitting

    NASA Astrophysics Data System (ADS)

    Kang, Junjie; Dang, Vinhquang; Li, Hongjian; Moon, Sungjin; Li, Panpan; Kim, Yangdoo; Kim, Chaehyun; Choi, Hakjong; Liu, Zhiqiang; Lee, Heon

    2016-12-01

    The water splitting properties of InGaN photoanodes equipped with ZnO nanowires were examined in this study. Over the solar spectrum range, the absorbance exhibited a remarkable increase due to the enhanced light absorption caused by the ZnO nanowires. By varying the ZnO nanowires length, the photo-to-current density of photoanodes was increased from 0.017 to 0.205 mA/cm2 at 1.23 V versus reversible hydrogen electrode. Consequently, the incident-photon-to-current efficiency was increased by a factor of 5.5 as the ZnO nanowires growth time increased from 2 to 4 h. The results of this research demonstrate the importance of light absorbance and the surface reaction sites of photoanodes on energy harvesting.

  7. Flexible high-output nanogenerator based on lateral ZnO nanowire array.

    PubMed

    Zhu, Guang; Yang, Rusen; Wang, Sihong; Wang, Zhong Lin

    2010-08-11

    We report here a simple and effective approach, named scalable sweeping-printing-method, for fabricating flexible high-output nanogenerator (HONG) that can effectively harvesting mechanical energy for driving a small commercial electronic component. The technique consists of two main steps. In the first step, the vertically aligned ZnO nanowires (NWs) are transferred to a receiving substrate to form horizontally aligned arrays. Then, parallel stripe type of electrodes are deposited to connect all of the NWs together. Using a single layer of HONG structure, an open-circuit voltage of up to 2.03 V and a peak output power density of approximately 11 mW/cm(3) have been achieved. The generated electric energy was effectively stored by utilizing capacitors, and it was successfully used to light up a commercial light-emitting diode (LED), which is a landmark progress toward building self-powered devices by harvesting energy from the environment. This research opens up the path for practical applications of nanowire-based piezoelectric nanogeneragtors for self-powered nanosystems.

  8. Plasmonic Properties of Vertically Aligned Nanowire Arrays

    DTIC Science & Technology

    2012-01-01

    slurry, with a diameter of 300 nm, was further diluted in a mixture of the surfactant Triton X-100 and methanol (1 : 400 by volume), with a dilution... mixture powder of ZnO : C (1 : 1 by weight) used as the source was placed at one end of an alumina boat, and the substrate with the gold pattern was put...directly above the material sources, face down. The furnace was heated to 900◦C while flowing simultaneously a mixture of argon and oxygen gases in a

  9. Two-step epitaxial synthesis and layered growth mechanism of bisectional ZnO nanowire arrays

    NASA Astrophysics Data System (ADS)

    Wang, Wenduo; Zhang, Zheng; Liao, Qingliang; Yu, Tong; Shen, Yanwei; Li, Peifeng; Huang, Yunhua; Zhang, Yue

    2013-01-01

    Here a two-step epitaxial synthesis method of bisectional ZnO nanowire arrays (ZNWAs) on silicon substrates has been demonstrated incorporating hydrothermal growth (HG) and CVD process. The as-received well-aligned ZNWAs are confirmed to be single-crystal and growing along <001> direction, normal to the substrate. Interestingly, they show significant tapering behavior at the conjunctions, which is consistent with theoretical predictions. Therefore a layered growth mechanism is promoted involving the classical two-dimensional nucleation theory. In the proposed mechanism, the HG ZNWA provides nucleation sites for successive growth. The growth mechanism is verified by complementary investigation into conjunction morphology, which is dependent on regional Zn vapor pressure (ZVP) in the CVD process. Three types of conjunction morphologies are differentiated and the difference is explained with the growth model.

  10. Aligned silicon carbide nanowire crossed nets with high superhydrophobicity.

    PubMed

    Niu, Jun Jie; Wang, Jian Nong; Xu, Qian Feng

    2008-06-01

    Aligned silicon carbide nanowire crossed nets (a-SiCNWNs) were directly synthesized by using a vapor-solid reaction at 1100 degrees C. Zinc sulfide was used as catalyst to assist the growth of a-SiCNWNs with small size and crystal structure. After functionalization with perfluoroalkysilane, a-SiCNWNs showed excellent superhydrophobic property with a high water contact angle more than 156 +/- 2 degrees , compared to random nanowires (147 +/- 2 degrees ) and pure silicon wafers (101 +/- 2 degrees ). The topographic roughness and chemical modification with CF 2/CF 3 groups contributed the better superhydrophobicity. Furthermore, the as-grown SiCNWNs can be scraped off and coated on other substrates such as pure silicon wafers. The novel nanowire coating with good superhydrophobicity displays extensive applications in silicon-related fields such as solar cells, radar, etc.

  11. Large-scale solution-phase growth of Cu-doped ZnO nanowire networks.

    PubMed

    Xu, Chunju; Koo, Tae-Woong; Kim, Byung-Sung; Lee, Jae-Hyun; Hwang, Sung Woo; Whang, Dongmok

    2011-07-01

    Film-like networks of Cu-doped (0.8-2.5 at.%) ZnO nanowires were successfully synthesized through a facile solution process at a low temperature (<100 degrees C). The pH value of solution plays a key role in controlling the density and quality of the Cu-doped ZnO nanowires and the dopant concentration of ZnO nanowires was controlled by adjusting the Cu2+/Zn2+ concentration ratio during the synthesis. The structural study showed that the as-prepared Cu-doped ZnO nanowires with a narrow diameter range of 20-30 nm were single crystal and grew along [0001] direction. Photoluminescence and electrical conductivity measurements showed that Cu doping can lead to a redshift in bandgap energy and an increase in the resistivity of ZnO. The thermal annealing of the as-grown nanowires at a low temperature (300 degrees C) decreased the defect-related emission within the visible range and increased the electrical conductivity. The high-quality ZnO nanowire network with controlled doping will enable further application to flexible and transparent electronics.

  12. Effects of synthesizing parameters on surface roughness and contact angles of ZnO nanowire films.

    PubMed

    Jing, Weixuan; Wang, Bing; Niu, Lingling; Jiang, Zhuangde; Qi, Han; Chen, Lujia; Zhou, Fan

    2014-06-01

    Effects of the synthesizing parameters on the surface roughness and the contact angles of ZnO nanowire films were studied in this paper. ZnO nanowire films were synthesized with the hydrothermal method on glass substrates, and the synthesizing parameters include the concentrations of the growth solution and the seed layer solution, the growth time span as well as the temperature. Atomic force microscopy and scanning electron microscopy were employed respectively to characterize the surface and the profile roughness of ZnO nanowire films. The measurement results by atomic force microscopy were in agreement with that by scanning electron microscopy, hence the former was used for the investigation of aforementioned effects. Relationships between the synthesizing parameters, the surface roughness and the contact angles of ZnO nanowire films were established, revealing that the synthesizing parameters affected significantly not only the surface roughness but also the contact angles of ZnO nanowire films. The results can be used for batch fabrication of ZnO nanowire-based structures and these structures-based sensors in a wide variety of applications.

  13. Investigation on the electrical conductivity of ZnO nanoparticles-decorated bacterial nanowires

    NASA Astrophysics Data System (ADS)

    Maruthupandy, Muthuchamy; Anand, Muthusamy; Maduraiveeran, Govindhan; Suresh, Santhanakrishnan; Sait Hameedha Beevi, Akbar; Jeeva Priya, Radhakrishnan

    2016-12-01

    Electrical conductivity of zinc oxide nanoparticles (ZnO NPs)-decorated bacterial nanowires is investigated in the present work. The ZnO NPs are prepared through a simple precipitation method and characterized by UV-vis spectrophotometer, Fourier transform infrared spectroscopy, x-ray diffraction, atomic force microscopy (AFM), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The SEM analysis discloses that the prepared ZnO NPs are spherical in shape with an average particle size of 3.5 nm. The ZnO NPs are decorated on the surface of bacterial nanowires and the same are characterized by AFM and HRTEM. The electrochemical performance of the bare bacterial nanowires and ZnO NPs-decorated bacterial nanowires is analyzed by cyclic voltammetry and linear sweep voltammetry, whereas their electrical conductivity is measured by electrochemical impedance spectroscopy. The results of the electrochemical investigations indicate that the ZnO NPs coating on the surface of bacterial nanowires improve the electrical conductivity of the bacterial nanowires.

  14. One-dimensional (1D) ZnO nanowires dye sensitized solar cell.

    PubMed

    Kiliç, Bayram; Wang, Lianzhou; Ozdemir, Orhan; Lu, Max; Tüzemen, Sebahattin

    2013-01-01

    High ordered one-dimensional (1D) Zinc oxide (ZnO) nanowires were grown on FTO substrate by using the hydrothermal method. Nanowires structures were used as the wide band-gap semiconducting photo-electrode in dye sensitized solar cell (DSSCs). Solar cell made from ZnO nanowire at 50 nm radius and several tens micron lengths showed high solar conversion efficiency (eta) of 2.1% and incident photon current efficiency (IPCE) 35% using nanowire/N719 dye/I-/I3- electrolyte. We also compared Ru N719 dye and N3 dye on ZnO nanowire against each other in respect to solar conversion efficiency and IPCE measurements. In the case of the N3 dye on ZnO nanowire conversion efficiency (eta) of 1.32% and IPCE 23% were obtained under an illumination of 100 mW/cm2. It was found that the performance of the Ru N719 dyes was better than about 50% that of the N3 dye in ZnO nanowire dye-sensitized solar cells.

  15. ZnO Quantum Dot Decorated Zn2SnO4 Nanowire Heterojunction Photodetectors with Drastic Performance Enhancement and Flexible Ultraviolet Image Sensors.

    PubMed

    Li, Ludong; Gu, Leilei; Lou, Zheng; Fan, Zhiyong; Shen, Guozhen

    2017-03-27

    Here we report the fabrication of high-performance ultraviolet photodetectors based on a heterojunction device structure in which ZnO quantum dots were used to decorate Zn2SnO4 nanowires. Systematic investigations have shown their ultrahigh light-to-dark current ratio (up to 6.8 × 10(4)), specific detectivity (up to 9.0 × 10(17) Jones), photoconductive gain (up to 1.1 × 10(7)), fast response, and excellent stability. Compared with a pristine Zn2SnO4 nanowire, a quantum dot decorated nanowire demonstrated about 10 times higher photocurrent and responsivity. Device physics modeling showed that their high performance originates from the rational energy band engineering, which allows efficient separation of electron-hole pairs at the interfaces between ZnO quantum dots and a Zn2SnO4 nanowire. As a result of band engineering, holes migrate to ZnO quantum dots, which increases electron concentration and lifetime in the nanowire conduction channel, leading to significantly improved photoresponse. The enhancement mechanism found in this work can also be used to guide the design of high-performance photodetectors based on other nanomaterials. Furthermore, flexible ultraviolet photodetectors were fabricated and integrated into a 10 × 10 device array, which constitutes a high-performance flexible ultraviolet image sensor. These intriguing results suggest that the band alignment engineering on nanowires can be rationally achieved using compound semiconductor quantum dots. This can lead to largely improved device performance. Particularly for ZnO quantum dot decorated Zn2SnO4 nanowires, these decorated nanowires may find broad applications in future flexible and wearable electronics.

  16. Biodiagnostics using oriented and aligned inorganic semiconductor nanotubes and nanowires.

    PubMed

    Kar, Piyush; Shankar, Karthik

    2013-07-01

    The simplicity of synthesis of deterministically positioned inorganic semiconductor nanorods (NRs) and nanotubes (NTs) coupled with their chemical stability, high surface area, controllable optical properties and tunable surface functionality, have sparked worldwide research efforts towards biodiagnostic applications. Biosensors based on oriented and aligned one-dimensional (1-D) inorganic semiconductor nanostructures have demonstrated remarkable detection sensitivity, high throughput and label-free operability. In comparison to suspensions of nanoparticles and discrete randomly oriented nanowires, nanowire (NW) and nanotube arrays offer continuous charge transport pathways, a major advantage for all-electrical detection and in exploiting electrokinetic effects. We review highly sensitive biosensors based on oriented and aligned NTs/NRs/NWs employing conventional detection methods, inclusive of fluorescence, electrochemistry and electromechanical sensing as well as detection methods unique to nanowires such as field-effect transistors. Entirely new types of sensing applications such as the impaling of living cells to monitor cellular events in situ, and substrates with electrically controlled wetting for surface-assisted laser desorption and ionization are emerging to take advantage of the unique properties of nanowire arrays. Concurrently, we explain the semiconductor materials and architectures employed, and the functionalization procedures used to construct the biosensors. Aligned semiconductor array-based approaches are critically examined in relation to prevailing technologies to get a sense of the exclusive niches that nanotube/nanorod array biosensors inhabit. The versatility of the detection principles that nanowire/nanotube arrays are compatible with are enabling hybrid approaches where combinations of detection methods are used. Such advantages offset the complexity associated with changing the status quo with respect to the current state-of-the-art in

  17. Imaging Single ZnO Vertical Nanowire Laser Cavities using UV-Laser Scanning Confocal Microscopy

    SciTech Connect

    Gargas, D.J.; Toimil-Molares, M.E.; Yang, P.

    2008-11-17

    We report the fabrication and optical characterization of individual ZnO vertical nanowire laser cavities. Dilute nanowire arrays with interwire spacing>10 ?m were produced by a modified chemical vapor transport (CVT) method yielding an ideal platform for single nanowire imaging and spectroscopy. Lasing characteristics of a single vertical nanowire are presented, as well as high-resolution photoluminescence imaging by UV-laser scanning confocal microscopy. In addition, three-dimensional (3D) mapping of the photoluminescence emission performed in both planar and vertical dimensions demonstrates height-selective imaging useful for vertical nanowires and heteronanostructures emerging in the field of optoelectronics and nanophotonics.

  18. Using the hydrothermal method to grow p-type ZnO nanowires on Al-doped ZnO thin film to fabricate a homojunction diode.

    PubMed

    Tseng, Yung-Kuan; Hung, Meng-Chun; Su, Shun-Lung; Li, Sheng-Kai

    2014-10-01

    In this study, the hydrothermal method is used to grow phosphorus-doped ZnO nanowires on Si/SiO2 substrates deposited with Al-doped ZnO thin film. This structure forms a homogeneous p-n junction. In this study, we are the pioneers to use ammonium hypophosphite (NH4H2PO2) as a source of phosphorus to prepare the precursor solution. Ammonium hypophosphite of different concentration levels is used to observe its effects on the growth of nanowires. The results show that the precursor solution prepared from ammonium hypophosphite can produce good crystalline ZnO nanowires while there is no linear relationship between the amounts and concentration levels of phosphorus doped into the nanowires. Whether the phosphorus-doped ZnO nanowires have the characteristics of a p-type semiconductor is indirectly verified by measuring whether the p-n junction made up of Al-doped ZnO thin film and phosphorus-doped ZnO nanowires shows rectifying behavior. I-V measurements are made on the specimens. The results show good rectifying behavior, proving that the phosphorus-doped ZnO nanowires and Al-doped AZO films have p-type and n-type semiconductor properties, constituting a good p-n junction. This result also proves that ammonium hypophosphite is a better source of phosphorus in the hydrothermal method to synthesize phosphorus-doped ZnO nanowires.

  19. Maximizing integrated optical and electrical properties of a single ZnO nanowire through native interfacial doping.

    PubMed

    Ding, Huaiyi; Pan, Nan; Ma, Chao; Wu, Yukun; Li, Junwen; Cai, Hongbing; Zhang, Kun; Zhang, Guanghui; Ren, Wenzhen; Li, Jianqi; Luo, Yi; Wang, Xiaoping; Hou, J G

    2014-05-21

    A native interfacial doping layer introduced in core-shell type ZnO nano-wires by a simple vapor phase re-growth procedure endows the produced nano-wires with both excellent electrical and optical performances compared to conventional homogeneous ZnO nanowires. The unique Zn-rich interfacial structure in the core-shell nanowires plays a crucial role in the outstanding performances.

  20. Highly aligned vertical GaN nanowires using submonolayer metal catalysts

    DOEpatents

    Wang, George T.; Li, Qiming; Creighton, J. Randall

    2010-06-29

    A method for forming vertically oriented, crystallographically aligned nanowires (nanocolumns) using monolayer or submonolayer quantities of metal atoms to form uniformly sized metal islands that serve as catalysts for MOCVD growth of Group III nitride nanowires.

  1. Shear Alignment of Diblock Copolymers for Patterning Nanowire Meshes

    SciTech Connect

    Gustafson, Kyle T.

    2016-09-08

    Metallic nanowire meshes are useful as cheap, flexible alternatives to indium tin oxide – an expensive, brittle material used in transparent conductive electrodes. We have fabricated nanowire meshes over areas up to 2.5 cm2 by: 1) mechanically aligning parallel rows of diblock copolymer (diBCP) microdomains; 2) selectively infiltrating those domains with metallic ions; 3) etching away the diBCP template; 4) sintering to reduce ions to metal nanowires; and, 5) repeating steps 1 – 4 on the same sample at a 90° offset. We aligned parallel rows of polystyrene-b-poly(2-vinylpyridine) [PS(48.5 kDa)-b-P2VP(14.5 kDa)] microdomains by heating above its glass transition temperature (Tg ≈ 100°C), applying mechanical shear pressure (33 kPa) and normal force (13.7 N), and cooling below Tg. DiBCP samples were submerged in aqueous solutions of metallic ions (15 – 40 mM ions; 0.1 – 0.5 M HCl) for 30 – 90 minutes, which coordinate to nitrogen in P2VP. Subsequent ozone-etching and sintering steps yielded parallel nanowires. We aimed to optimize alignment parameters (e.g. shear and normal pressures, alignment duration, and PDMS thickness) to improve the quality, reproducibility, and scalability of meshes. We also investigated metals other than Pt and Au that may be patterned using this technique (Cu, Ag).

  2. Luminance behavior of lithium-doped ZnO nanowires with p-type conduction characteristics.

    PubMed

    Ko, Won Bae; Lee, Jun Seok; Lee, Sang Hyo; Cha, Seung Nam; Sohn, Jung Inn; Kim, Jong Min; Park, Young Jun; Kim, Hyun Jung; Hong, Jin Pyo

    2013-09-01

    The present study describes the room-temperature cathodeluminescence (CL) and temperature-dependent photoluminescence (PL) properties of p-type lithium (Li)-doped zinc oxide (ZnO) nanowires (NWs) grown by hydrothermal doping and post-annealing processes. A ZnO thin film was used as a seed layer in NW growth. The emission wavelengths and intensities of undoped ZnO NWs and p-type Li-doped ZnO NWs were analyzed for comparison. CL and PL observations of post-annealed p-type Li-doped ZnO NWs clearly exhibited a dominant sharp band-edge emission. Finally, a n-type ZnO thin film/p-type annealed Li-doped ZnO NW homojunction diode was prepared to confirm the p-type conduction of annealed Li-doped ZnO NWs as well as the structural properties measured by transmission electron microscopy.

  3. Steering epitaxial alignment of Au, Pd, and AuPd nanowire arrays by atom flux change.

    PubMed

    Yoo, Youngdong; Seo, Kwanyong; Han, Sol; Varadwaj, Kumar S K; Kim, Hyun You; Ryu, Ji Hoon; Lee, Hyuck Mo; Ahn, Jae Pyoung; Ihee, Hyotcherl; Kim, Bongsoo

    2010-02-10

    We have synthesized epitaxial Au, Pd, and AuPd nanowire arrays in vertical or horizontal alignment on a c-cut sapphire substrate. We show that the vertical and horizontal nanowire arrays grow from half-octahedral seeds by the correlations of the geometry and orientation of seed crystals with those of as-grown nanowires. The alignment of nanowires can be steered by changing the atom flux. At low atom deposition flux vertical nanowires grow, while at high atom flux horizontal nanowires grow. Similar vertical/horizontal epitaxial growth is also demonstrated on SrTiO(3) substrates. This orientation-steering mechanism is visualized by molecular dynamics simulations.

  4. Photovoltaic effect and charge storage in single ZnO nanowires

    SciTech Connect

    Liao Zhimin; Xu Jun; Zhang Jingmin; Yu Dapeng

    2008-07-14

    Asymmetric Schottky barriers between ZnO nanowire and metal electrode have been fabricated at the two ends of the nanowire. An obvious photocurrent generated from the device at zero voltage bias can be switched on/off with quick response by controlling the light irradiation. Moreover, the device can still afford a current at zero bias after switching off light illumination, which is ascribed to the charge storage effect in single ZnO nanowires. The underlying mechanisms related to the photovoltaic effect and charge storage were discussed.

  5. Controllable morphologies of ZnO nanocrystals: nanowire attracted nanosheets, nanocartridges and hexagonal nanotowers

    NASA Astrophysics Data System (ADS)

    Hu, P. A.; Liu, Y. Q.; Fu, L.; Wang, X. B.; Zhu, D. B.

    2005-01-01

    ZnO nanowire attracted nanosheets, nanocartridges and hexagonal nanotowers are fabricated by evaporation of ZnS in the presence of trace oxygen under controlled conditions. The nanosheet has an irregular structure, and nanowires sprout from the flange of the nanosheet. The nanocartridge has one row of prismatic nanorods grown on the (0001) surface of the ZnO nanobelts. The hexagonal nanotower, which grows along the c axis, shows an interesting layer structure and seems to form by piling up hexagonal ZnO nanocrystals layer on layer. These nanomaterials might have potential applications in optoelectronics.

  6. Water-repellent ZnO nanowires films obtained by octadecylsilane self-assembled monolayers

    NASA Astrophysics Data System (ADS)

    Badre, C.; Pauporté, T.; Turmine, M.; Dubot, P.; Lincot, D.

    2008-05-01

    Zinc oxide (ZnO) films with well-controlled morphologies have been prepared by electrochemical deposition. A seed layer of nanocrystallites of ZnO was prepared from which ZnO nanowires were grown from a low concentration of ZnCl 2. The nanowires are rough and dense and their superhydrophilicity is enhanced. A treatment with an alkylsilane (octadecylsilane) yields superhydrophobic surfaces with very high advancing and receding contact angles 173°/172° and a very low roll-off angle. Our superhydrophobic films are stable for more than 6 months.

  7. Electrical properties of ZnO single nanowires.

    PubMed

    Stiller, Markus; Barzola-Quiquia, José; Zoraghi, Mahsa; Esquinazi, Pablo

    2015-10-02

    We have investigated the electrical resistance R(T) of ZnO nanowires of ≈ 400 nm diameter as a function of temperature, between 30 K and 300 K, and frequency in the range 40 Hz to 30 MHz. The measurements were done on the as-prepared and after low-energy proton implantation at room temperature. The temperature dependence of the resistance of the wire, before proton implantation, can be well described by two processes in parallel. One process is the fluctuation induced tunneling conductance (FITC) and the other the usual thermally activated process. The existence of a tunneling conductance was also observed in the current-voltage ([Formula: see text]) results, and can be well described by the FITC model. Impedance spectroscopy measurements in the as-prepared state and at room temperature, indicate and support the idea of two contributions of these two transport processes in the nanowires. Electron backscatter diffraction confirms the existence of different crystalline regions. After the implantation of H(+) a third thermally activated process is found that can be explained by taking into account the impurity band splitting due to proton implantation.

  8. ZnO nanowire UV photodetectors with high internal gain.

    PubMed

    Soci, C; Zhang, A; Xiang, B; Dayeh, S A; Aplin, D P R; Park, J; Bao, X Y; Lo, Y H; Wang, D

    2007-04-01

    ZnO nanowire (NW) visible-blind UV photodetectors with internal photoconductive gain as high as G approximately 108 have been fabricated and characterized. The photoconduction mechanism in these devices has been elucidated by means of time-resolved measurements spanning a wide temporal domain, from 10-9 to 102 s, revealing the coexistence of fast (tau approximately 20 ns) and slow (tau approximately 10 s) components of the carrier relaxation dynamics. The extremely high photoconductive gain is attributed to the presence of oxygen-related hole-trap states at the NW surface, which prevents charge-carrier recombination and prolongs the photocarrier lifetime, as evidenced by the sensitivity of the photocurrrent to ambient conditions. Surprisingly, this mechanism appears to be effective even at the shortest time scale investigated of t < 1 ns. Despite the slow relaxation time, the extremely high internal gain of ZnO NW photodetectors results in gain-bandwidth products (GB) higher than approximately 10 GHz. The high gain and low power consumption of NW photodetectors promise a new generation of phototransistors for applications such as sensing, imaging, and intrachip optical interconnects.

  9. Controllable positioning and alignment of silver nanowires by tunable hydrodynamic focusing.

    PubMed

    Liu, Mei; Chen, Ying; Guo, Qiuquan; Li, Ruying; Sun, Xueliang; Yang, Jun

    2011-03-25

    Assembly and alignment of nanowires or nanotubes are critical steps for integrating functional nanodevices by the bottom-up strategy. However, it is still challenging to manipulate either an array of nanowires or individual nanowires in a controllable manner. Here we present a simple but versatile method of positioning and aligning nanowires by hydrodynamic focusing that functions as 'hydro-tweezers'. By adjusting the flow duration and flow rates of the sheath flows and sample flow, the density, width and position of the nanowire arrays, as building blocks of nanodevices, can be readily tuned in the hydrodynamic focusing process. This approach exhibits great potentials in the assembly of an array of functional nanodevices. With this method, multiple nanowire arrays can be positioned and aligned on predefined locations. Further focusing the sample flow, nanowires flow in single file. Thus single nanowires can also be lined up and located to desired positions.

  10. ZnO quantum dots-decorated ZnO nanowires for the enhancement of antibacterial and photocatalytic performances

    NASA Astrophysics Data System (ADS)

    Wu, Jyh Ming; Tsay, Li-Yi

    2015-10-01

    We demonstrate highly antibacterial activities for killing off Staphylococcus aureus and Escherichia coli using ZnO nanowires decorated with ZnO quantum dots (so-called ZnO QDs/NWs) under visible-light irradiation and dark conditions. The average size of the ZnO QDs is in the range of 3-5 nm; these were uniformly dispersed on the ZnO nanowires’ surface to form the ZnO QDs/NWs. A significant blue-shift effect was observed using photoluminescence (PL) spectra. The size of the ZnO QDs is strongly dependent on the material’s synthesis time. The ZnO QDs/NWs exhibited an excellent photocatalytic activity under visible-light irradiation. The ZnO QDs’ active sites (i.e. the O-H bond and Zn2+) accelerate the photogenerated-carrier migration from the QDs to the NWs. As a consequence, the electrons reacted with the dissolved oxygen to form oxygen ions and produced hydroperoxyl radicals to enhance photocatalytic activity. The antibacterial activities (as indicated by R-factor-inhibiting activity) of the ZnO QDs/NWs for killing off Staphylococcus aureus and Escherichia coli is around 4.9 and 5.5 under visible-light irradiation and dark conditions, respectively. The hydroxyl radicals served as an efficient oxidized agent for decomposing the organic dye and microorganism species. The antibacterial activities of the ZnO QDs/NWs in the dark may be attributed to the Zn2+ ions that were released from the ZnO QDs and infused into the microbial solution against the growth of bacteria thus disrupting the microorganism. The highly antibacterial and photocatalytic activity of the ZnO QDs/NWs can be well implanted on a screen window, thus offering a promising solution to inhibit the spread of germs under visible-light and dark conditions.

  11. Conducting properties of nearly depleted ZnO nanowire UV sensors fabricated by dielectrophoresis.

    PubMed

    García Núñez, C; García Marín, A; Nanterne, P; Piqueras, J; Kung, P; Pau, J L

    2013-10-18

    ZnO nanowires (NWs) with different radii (rNW) have been aligned between pre-patterned electrodes using dielectrophoresis (DEP) for the fabrication of high gain UV sensors. The DEP conditions (voltage amplitude and frequency) and electrode material, geometry and size were optimized to enhance the efficiency during the DEP process. To understand the alignment mechanism of the ZnO NWs, the dielectrophoretic force (FDEP) was analyzed as a function of the DEP conditions and NW dimensions. These studies showed that the DEP alignment process tends to trap NWs with a smaller radius. The effects of NW size on device performance were analyzed by means of I-V measurements in darkness and under illumination (200 nm < λ < 600 nm). In darkness, the NW resistance increases as rNW decreases due to the reduction of the conduction volume, until saturation is reached for rNW < 65 nm. On the other hand, the NW spectral photoresponse shows high values around 10(8) A W(-1) (measured at 5 V and λ < 370 nm) and follows a linear trend as a function of the NW cross section. In addition, the cut-off wavelength depends on rNW, presenting a clear blue-shift for NWs with a lower radius (rNW < 50 nm). Transient photoresponse studies show that NWs with lower radii have longer rise times and shorter decay times mainly due to surface trapping effects. Regardless of NW size, passivation of the surface using a dielectric capping layer of SiO2 reduces the dynamic range of the photoresponse due to a strong increase of the dark current.

  12. Gate-tunable photocurrent in ZnO nanowires mediated by nanowire-substrate interface states

    SciTech Connect

    Yang, Liangliang; Wang, Qiaoming; Tao, Xin; Taylor, Shelby P.; Gu, Yi

    2015-03-02

    We report the observation of gate-tunable photocurrent in ZnO nanowires under optical excitation in the visible regime. Particularly, the photocurrent can be tuned by one order of magnitude with moderate changes in the backgate voltages (from −10 V to 10 V), and by more than two orders of magnitude within an extended range of the backgate voltage (several tens of volts). Using scanning photocurrent microscopy, single-nanowire photocurrent spectroscopy, and numerical calculations, we suggest that this gate tunability originates from the nanowire/substrate (Si{sub 3}N{sub 4}) interface states, where the electron occupation of these states and the excitation of electrons are controlled by the backgate voltage. This external gate tunability of the photocarrier generation facilitated by interface states provides an additional way to control photodetecting and photovoltaic properties, and this approach can also be extended to other nanostructures, such as two-dimensional semiconductors, where the surface effects are significant.

  13. Luminescence dynamics of bound exciton of hydrogen doped ZnO nanowires

    SciTech Connect

    Yoo, Jinkyoung; Yi, Gyu -Chul; Chon, Bonghwan; Joo, Taiha; Wang, Zhehui

    2016-04-11

    In this study, all-optical camera, converting X-rays into visible photons, is a promising strategy for high-performance X-ray imaging detector requiring high detection efficiency and ultrafast detector response time. Zinc oxide is a suitable material for all-optical camera due to its fast radiative recombination lifetime in sub-nanosecond regime and its radiation hardness. ZnO nanostructures have been considered as proper building blocks for ultrafast detectors with spatial resolution in sub-micrometer scale. To achieve remarkable enhancement of luminescence efficiency n-type doping in ZnO has been employed. However, luminescence dynamics of doped ZnO nanostructures have not been thoroughly investigated whereas undoped ZnO nanostructures have been employed to study their luminescence dynamics. Here we report a study of luminescence dynamics of hydrogen doped ZnO nanowires obtained by hydrogen plasma treatment. Hydrogen doping in ZnO nanowires gives rise to significant increase in the near-band-edge emission of ZnO and decrease in averaged photoluminescence lifetime from 300 to 140 ps at 10 K. The effects of hydrogen doping on the luminescent characteristics of ZnO nanowires were changed by hydrogen doping process variables.

  14. Luminescence dynamics of bound exciton of hydrogen doped ZnO nanowires

    DOE PAGES

    Yoo, Jinkyoung; Yi, Gyu -Chul; Chon, Bonghwan; ...

    2016-04-11

    In this study, all-optical camera, converting X-rays into visible photons, is a promising strategy for high-performance X-ray imaging detector requiring high detection efficiency and ultrafast detector response time. Zinc oxide is a suitable material for all-optical camera due to its fast radiative recombination lifetime in sub-nanosecond regime and its radiation hardness. ZnO nanostructures have been considered as proper building blocks for ultrafast detectors with spatial resolution in sub-micrometer scale. To achieve remarkable enhancement of luminescence efficiency n-type doping in ZnO has been employed. However, luminescence dynamics of doped ZnO nanostructures have not been thoroughly investigated whereas undoped ZnO nanostructures havemore » been employed to study their luminescence dynamics. Here we report a study of luminescence dynamics of hydrogen doped ZnO nanowires obtained by hydrogen plasma treatment. Hydrogen doping in ZnO nanowires gives rise to significant increase in the near-band-edge emission of ZnO and decrease in averaged photoluminescence lifetime from 300 to 140 ps at 10 K. The effects of hydrogen doping on the luminescent characteristics of ZnO nanowires were changed by hydrogen doping process variables.« less

  15. Opto-electrical properties of Sb-doped p-type ZnO nanowires

    SciTech Connect

    Kao, Tzu-Hsuan; Chen, Jui-Yuan; Chiu, Chung-Hua; Huang, Chun-Wei; Wu, Wen-Wei

    2014-03-17

    P-type ZnO nanowires (NWs) have attracted much attention in the past years due to the potential applications for optoelectronics and piezotronics. In this study, we have synthesized Sb-doped p-type ZnO NWs on Si (100) substrates by chemical vapor deposition with Aucatalyst. The Sb-doped ZnO NWs are single crystalline with high density, grown along [1-1-2] direction. The doping percentage of Sb is about 2.49%, which has been confirmed by X-ray photoelectron spectroscopy. The ZnO NW field effect transistor demonstrated its p-type characteristics. A high responsivity to ultraviolet photodetection was also observed. In addition, compared to intrinsic ZnO NWs, the conductivity of the Sb-doped ZnO NWs exhibited ∼2 orders of magnitude higher. These properties make the p-type ZnO NWs a promising candidate for electronic and optoelectronic devices.

  16. Enhanced photoelectric performance in self-powered UV detectors based on ZnO nanowires with plasmonic Au nanoparticles scattered electrolyte

    NASA Astrophysics Data System (ADS)

    Zeng, Yiyu; Ye, Zhizhen; Lu, Bin; Dai, Wei; Pan, Xinhua

    2016-04-01

    Vertically aligned ZnO nanowires (NWs) were grown on a fluorine-doped tin-oxide-coated glass substrate by a hydrothermal method. Au nanoparticles were well dispersed in the mixed solution of ethanol and deionized water. A simple self-powered ultraviolet detector based on solid-liquid heterojunction was fabricated, utilizing ZnO NWs as active photoanode and such prepared mixed solution as electrolyte. The introduction of Au nanoparticles results in considerable improvements in the responsivity and sensitivity of the device compared with the one using deionized water as electrolyte, which is attributed to the enhanced light harvesting by Au nanoparticles.

  17. Microfabricated environmental barrier using ZnO nanowire on metal mesh

    NASA Astrophysics Data System (ADS)

    Shin, Young-Min; Lee, Seung-Ki; Lee, Joo-Yong; Kim, Jun-Ho; Park, Jae-Hyoung; Ji, Chang-Hyeon

    2013-12-01

    In this study, a waterproof environmental barrier for microsensor package has been developed using metal mesh covered with zinc oxide (ZnO) nanowire. A near superhydrophobic surface with two-dimensional array of holes has been fabricated by hydrothermal growth of ZnO nanowire on an off-the-shelf steel use stainless (SUS) mesh. For a twill-woven SUS wire mesh having wire thickness of 30 µm and gap of 33 µm, a maximum contact angle of 160.40° and a minimum contact angle hysteresis of 15.23° have been achieved using ZnO nanowire grown on the wire surface and further deposition of FC film. The mesh was able to withstand a maximum water pressure of 2,459.8 Pa. The measured height of ZnO nanowire was approximately 2-3 µm. The fabricated SUS mesh covered with ZnO nanowire has been assembled with a microphone package, and waterproof characteristics have been measured by cyclic dipping test at various water levels. For a microphone package having two acoustic ports on top and bottom covered with fabricated mesh, no visible change in acoustic characteristics has been observed up to 1,372.9 Pa of water pressure. Total volume of the package was 6.8 × 9.8 × 1.9 mm3.

  18. An Sb-doped p-type ZnO nanowire based random laser diode.

    PubMed

    Bashar, Sunayna B; Suja, Mohammad; Morshed, Muhammad; Gao, Fan; Liu, Jianlin

    2016-02-12

    An electrically pumped Sb-doped ZnO nanowire/Ga-doped ZnO p-n homojunction random laser is demonstrated. Catalyst-free Sb-doped ZnO nanowires were grown on a Ga-doped ZnO thin film on a Si substrate by chemical vapor deposition. The morphology of the as-grown titled nanowires was observed by scanning electron microscopy. X-ray photoelectron spectroscopy results indicated the incorporation of Sb dopants. Shallow acceptor states of Sb-doped nanowires were confirmed by photoluminescence measurements. Current-voltage measurements of ZnO nanowire structures assembled from p- and n-type materials showed a typical p-n diode characteristic with a threshold voltage of about 7.5 V. Very good photoresponse was observed in the UV region operated at 0 V and different reverse biases. Random lasing behavior with a low-threshold current of around 10 mA was demonstrated at room temperature. The output power was 170 nW at 30 mA.

  19. Morphology engineering of ZnO nanostructures for high performance supercapacitors: Enhanced electrochemistry of ZnO nanocones compared to ZnO nanowires.

    PubMed

    He, Xiaoli; Yoo, Joung; Lee, Min; Bae, Joonho

    2017-04-06

    In this work, the morphology of ZnO nanostructures is engineered to demonstrate enhanced supercapacitor characteristics of ZnO nanocones (NCs) compared to ZnO nanowires (NWs). ZnO NCs are obtained by chemically etching ZnO NWs. Electrochemical characteristics of ZnO NCs and NWs are extensively investigated to demonstrate morphology dependent capacitive performance of one dimensional ZnO nanostructures. Cyclic voltammetry measurements on these two kind of electrodes in three electrode cell confirms that ZnO NCs exhibit high specific capacitance of 378.5 F g-1 at a scan rate of 20 mV s-1, which is almost twice that of ZnO NWs (191.5 F g-1). The charge-discharge and EIS measurements also clearly results in enhanced capacitive performance of NCs as evidenced by higher specific capacitances and lower internal resistance. Asymmetric spuercapacitors are fabricated using activated carbon (AC) as negative electrode and ZnO NWs and NCs as positive electrodes. The ZnO NC//AC can deliver a maximum specific capacitance of 126 F g-1 at a current density of 1.33 A g-1 with an energy density of 25.2 W h kg-1 at the power density of 896.44 W kg-1. In contrast, ZnO NW//AC displays 63% of capacitance obtained from ZnO NC//AC supercapacitor. The enhanced performances of NCs are attributed to higher surface area of ZnO nanostructures after the morphology is altered from NWs to NCs.

  20. Orientation-enhanced growth and optical properties of ZnO nanowires grown on porous silicon substrates.

    PubMed

    Hsu, Hsu-Cheng; Cheng, Ching-Sheng; Chang, Chia-Chieh; Yang, Song; Chang, Chen-Shiung; Hsieh, Wen-Feng

    2005-02-01

    ZnO nanowires have been synthesized on porous silicon substrates with different porosities via the vapour-liquid-solid method. The texture coefficient analysed from the XRD spectra indicates that the nanowires are more highly orientated on the appropriate porosity of porous silicon substrate than on the smooth surface of silicon. The Raman spectrum reveals the high quality of the ZnO nanowires. From the temperature-dependent photoluminescence spectra, we deduced the activation energies of free and bound excitons.

  1. "High Quantum Efficiency of Band-Edge Emission from ZnO Nanowires"

    SciTech Connect

    GARGAS, DANIEL; GAO, HANWEI; WANG, HUNGTA; PEIDONG, YANG

    2010-12-01

    External quantum efficiency (EQE) of photoluminescence as high as 20 percent from isolated ZnO nanowires were measured at room temperature. The EQE was found to be highly dependent on photoexcitation density, which underscores the importance of uniform optical excitation during the EQE measurement. An integrating sphere coupled to a microscopic imaging system was used in this work, which enabled the EQE measurement on isolated ZnO nanowires. The EQE values obtained here are significantly higher than those reported for ZnO materials in forms of bulk, thin films or powders. Additional insight on the radiative extraction factor of one-dimensional nanostructures was gained by measuring the internal quantum efficiency of individual nanowires. Such quantitative EQE measurements provide a sensitive, noninvasive method to characterize the optical properties of low-dimensional nanostructures and allow tuning of synthesis parameters for optimization of nanoscale materials.

  2. Ethanol-Sensing Characteristics of Nanostructured ZnO: Nanorods, Nanowires, and Porous Nanoparticles

    NASA Astrophysics Data System (ADS)

    Quy, Chu Thi; Hung, Chu Manh; Van Duy, Nguyen; Hoa, Nguyen Duc; Jiao, Mingzhi; Nguyen, Hugo

    2017-01-01

    The morphology and crystalline size of metal oxide-sensing materials are believed to have a strong influence on the performance of gas sensors. In this paper, we report a comparative study on the ethanol-sensing characteristics of ZnO nanorods, nanowires, and porous nanoparticles. The porous ZnO nanoparticles were prepared using a simple thermal decomposition of a sheet-like hydrozincite, whereas the nanorods and nanowires were grown by hydrothermal and chemical vapor deposition methods, respectively. The morphology and crystal structure of the synthesized materials were characterized by field-emission scanning electron microscopy and x-ray diffraction. Ethanol gas-sensing characteristics were systematically studied at different temperatures. Our findings show that for ethanol gas-sensing applications, ZnO porous nanoparticles exhibited the best sensitivity, followed by the nanowires and nanorods. Gas-sensing properties were also examined with respect to the role of crystal growth orientation, crystal size, and porosity.

  3. Eu-doped ZnO nanowire arrays grown by electrodeposition

    NASA Astrophysics Data System (ADS)

    Lupan, O.; Pauporté, T.; Viana, B.; Aschehoug, P.; Ahmadi, M.; Cuenya, B. Roldan; Rudzevich, Y.; Lin, Y.; Chow, L.

    2013-10-01

    The preparation of efficient light emitting diodes requires active optical layers working at low voltage for light emission. Trivalent lanthanide doped wide-bandgap semiconducting oxide nanostructures are promising active materials in opto-electronic devices. In this work we report on the electrochemical deposition (ECD) of Eu-doped ZnO (ZnO:Eu) nanowire arrays on glass substrates coated with F-doped polycrystalline SnO2. The structural, chemical and optical properties of ZnO:Eu nanowires have been systematically characterized by X-ray diffraction, transmission electron microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, secondary ion mass spectrometry, and photoluminescence. XRD results suggest the substitution of Zn2+ by Eu ions in the crystalline lattice. High-resolution TEM and associated electron diffraction studies indicate an interplanar spacing of 0.52 nm which corresponds to the (0 0 0 1) crystal plane of the hexagonal ZnO, and a growth along the c-direction. The ZnO:Eu nanowires have a single crystal structure, without noticeable defects. According to EDX, SIMS and XPS studies, cationic Eu species are detected in these samples showing the incorporation of Eu into the ZnO matrix. The oxidation states of europium ions in the nanowires are determined as +3 (74%) and +2 (26%). Photoluminescence studies demonstrated red emission from the Eu-doped ZnO nanowire arrays. When Eu was incorporated during the nanowire growth, the sharp 5D0-7F2 transition of the Eu3+ ion at around 612 nm was observed. These results suggest that Eu doped ZnO nanowires could pave the way for efficient, multispectral LEDs and optical devices.

  4. Single ZnO Nanowire-Based Gas Sensors to Detect Low Concentrations of Hydrogen

    PubMed Central

    Cardoza-Contreras, Marlene N.; Romo-Herrera, José M.; Ríos, Luis A.; García-Gutiérrez, R.; Zepeda, T. A.; Contreras, Oscar E.

    2015-01-01

    Low concentrations of hazardous gases are difficult to detect with common gas sensors. Using semiconductor nanostructures as a sensor element is an alternative. Single ZnO nanowire gas sensor devices were fabricated by manipulation and connection of a single nanowire into a four-electrode aluminum probe in situ in a dual-beam scanning electron microscope-focused ion beam with a manipulator and a gas injection system in/column. The electrical response of the manufactured devices shows response times up to 29 s for a 121 ppm of H2 pulse, with a variation in the nanowire resistance appreciable at room temperature and at 373.15 K of approximately 8% and 14% respectively, showing that ZnO nanowires are good candidates to detect low concentrations of H2. PMID:26690158

  5. Single ZnO Nanowire-Based Gas Sensors to Detect Low Concentrations of Hydrogen.

    PubMed

    Cardoza-Contreras, Marlene N; Romo-Herrera, José M; Ríos, Luis A; García-Gutiérrez, R; Zepeda, T A; Contreras, Oscar E

    2015-12-04

    Low concentrations of hazardous gases are difficult to detect with common gas sensors. Using semiconductor nanostructures as a sensor element is an alternative. Single ZnO nanowire gas sensor devices were fabricated by manipulation and connection of a single nanowire into a four-electrode aluminum probe in situ in a dual-beam scanning electron microscope-focused ion beam with a manipulator and a gas injection system in/column. The electrical response of the manufactured devices shows response times up to 29 s for a 121 ppm of H₂ pulse, with a variation in the nanowire resistance appreciable at room temperature and at 373.15 K of approximately 8% and 14% respectively, showing that ZnO nanowires are good candidates to detect low concentrations of H₂.

  6. Hydrothermal Growth and Application of ZnO Nanowire Films with ZnO and TiO2 Buffer Layers in Dye-Sensitized Solar Cells

    NASA Astrophysics Data System (ADS)

    Yang, Weiguang; Wan, Farong; Chen, Siwei; Jiang, Chunhua

    2009-12-01

    This paper reports the effects of the seed layers prepared by spin-coating and dip-coating methods on the morphology and density of ZnO nanowire arrays, thus on the performance of ZnO nanowire-based dye-sensitized solar cells (DSSCs). The nanowire films with the thick ZnO buffer layer (~0.8-1 μm thick) can improve the open circuit voltage of the DSSCs through suppressing carrier recombination, however, and cause the decrease of dye loading absorbed on ZnO nanowires. In order to further investigate the effect of TiO2 buffer layer on the performance of ZnO nanowire-based DSSCs, compared with the ZnO nanowire-based DSSCs without a compact TiO2 buffer layer, the photovoltaic conversion efficiency and open circuit voltage of the ZnO DSSCs with the compact TiO2 layer (~50 nm thick) were improved by 3.9-12.5 and 2.4-41.7%, respectively. This can be attributed to the introduction of the compact TiO2 layer prepared by sputtering method, which effectively suppressed carrier recombination occurring across both the film-electrolyte interface and the substrate-electrolyte interface.

  7. Enhanced Visible Light Photocatalytic Activity of ZnO Nanowires Doped with Mn2+ and Co2+ Ions

    PubMed Central

    Li, Wei; Wang, Guojing; Chen, Chienhua; Liao, Jiecui; Li, Zhengcao

    2017-01-01

    In this research, ZnO nanowires doped with Mn2+ and Co2+ ions were synthesized through a facile and inexpensive hydrothermal approach, in which Mn2+ and Co2+ ions successfully substituted Zn2+ in the ZnO crystal lattice without changing the morphology and crystalline structure of ZnO. The atomic percentages of Mn and Co were 6.29% and 1.68%, respectively, in the doped ZnO nanowires. The photocatalytic results showed that Mn-doped and Co-doped ZnO nanowires both exhibited higher photocatalytic activities than undoped ZnO nanowires. Among the doped ZnO nanowires, Co-doped ZnO, which owns a twice active visible-light photocatalytic performance compared to pure ZnO, is considered a more efficient photocatalyst material. The enhancement of its photocatalytic performance originates from the doped metal ions, which enhance the light absorption ability and inhibit the recombination of photo-generated electron-hole pairs as well. The effect of the doped ion types on the morphology, crystal lattice and other properties of ZnO was also investigated. PMID:28336854

  8. Enhanced Visible Light Photocatalytic Activity of ZnO Nanowires Doped with Mn(2+) and Co(2+) Ions.

    PubMed

    Li, Wei; Wang, Guojing; Chen, Chienhua; Liao, Jiecui; Li, Zhengcao

    2017-01-19

    In this research, ZnO nanowires doped with Mn(2+) and Co(2+) ions were synthesized through a facile and inexpensive hydrothermal approach, in which Mn(2+) and Co(2+) ions successfully substituted Zn(2+) in the ZnO crystal lattice without changing the morphology and crystalline structure of ZnO. The atomic percentages of Mn and Co were 6.29% and 1.68%, respectively, in the doped ZnO nanowires. The photocatalytic results showed that Mn-doped and Co-doped ZnO nanowires both exhibited higher photocatalytic activities than undoped ZnO nanowires. Among the doped ZnO nanowires, Co-doped ZnO, which owns a twice active visible-light photocatalytic performance compared to pure ZnO, is considered a more efficient photocatalyst material. The enhancement of its photocatalytic performance originates from the doped metal ions, which enhance the light absorption ability and inhibit the recombination of photo-generated electron-hole pairs as well. The effect of the doped ion types on the morphology, crystal lattice and other properties of ZnO was also investigated.

  9. Ion bombardment effects on ZnO nanowires during plasma treatment

    SciTech Connect

    Ra, H.-W.; Choi, K. S.; Ok, C. W.; Jo, S. Y.; Im, Y. H.; Bai, K. H.

    2008-07-21

    We present the effects of ion bombardment on ZnO nanowires caused by their exposure to an Ar inductively coupled plasma. The conductivity of the individual ZnO nanowire was increased in up to 3 orders of magnitude due to increase in both carrier concentration and mobility, with a substantial negative shift in the threshold gate voltage also being observed. The drastic changes in the electrical properties were attributed to the decrease in species adsorbed on the surface, as well as to the increase in oxygen vacancies near the surface caused by ion bombardment.

  10. Self-assembled ZnO agave-like nanowires and anomalous superhydrophobicity

    NASA Astrophysics Data System (ADS)

    Yang, Y. H.; Li, Z. Y.; Wang, B.; Wang, C. X.; Chen, D. H.; Yang, G. W.

    2005-09-01

    Thin films of ZnO agave-like nanowires were prepared on amorphous carbon thin layers on silicon substrates using thermal chemical vapour transport and condensation without any metal catalysts. The unusual superhydrophobicity of the fabricated surface was measured; the water contact angle reaches 151.1°. On the basis of experimental and theoretical analyses, it appears likely that the biomimetic microcomposite and nanocomposite surfaces of the prepared thin films of ZnO agave-like nanowires are responsible for the excellent superhydrophobicity.

  11. Characterizations of Ohmic and Schottky-behaving contacts of a single ZnO nanowire.

    PubMed

    Bercu, Bogdan; Geng, Wei; Simonetti, Olivier; Kostcheev, Sergei; Sartel, Corinne; Sallet, Vincent; Lérondel, Gilles; Molinari, Michaël; Giraudet, Louis; Couteau, Christophe

    2013-10-18

    Current-voltage and Kelvin probe force microscopy (KPFM) measurements were performed on single ZnO nanowires. Measurements are shown to be strongly correlated with the contact behavior, either Ohmic or diode-like. The ZnO nanowires were obtained by metallo-organic chemical vapor deposition (MOCVD) and contacted using electronic-beam lithography. Depending on the contact geometry, good quality Ohmic contacts (linear I-V behavior) or non-linear (diode-like) contacts were obtained. Current-voltage and KPFM measurements on both types of contacted ZnO nanowires were performed in order to investigate their behavior. A clear correlation could be established between the I-V curve, the electrical potential profile along the device and the nanowire geometry. Some arguments supporting this behavior are given based on technological issues and on depletion region extension. This work will help to better understand the electrical behavior of Ohmic contacts on single ZnO nanowires, for future applications in nanoscale field-effect transistors and nano-photodetectors.

  12. Persistent photoconductivity in ZnO nanowires: Influence of oxygen and argon ambient

    NASA Astrophysics Data System (ADS)

    Madel, M.; Huber, F.; Mueller, R.; Amann, B.; Dickel, M.; Xie, Y.; Thonke, K.

    2017-03-01

    ZnO nanowires typically show persistent photoconductivity (PPC), which depends in their temporal behaviour on the ambient. We investigate ZnO nanowires in oxygen and argon ambient and analyze the PPC both on the short and on the long time scale to sort out the underlying mechanisms. Wavelength dependent excitation shows the energy barrier for the PPC to be around 150 meV below the band gap of ZnO, independent of the ambient atmosphere. In photocurrent measurements at constant wavelength, a log-logistic dependence of the conductivity on the partial oxygen pressure is observed. The experimental results are compared to a model of Bonasewicz et al. [J. Electrochem. Soc. 133, 2270 (1986)] and can be explained by oxygen adsorption processes occurring on the surface of the ZnO nanowires. From temperature dependent measurements of the decay times in oxygen and argon ambient, the related activation energies for the fast and slow decay processes are determined. Comparing our results to theoretical calculations of energy levels of intrinsic defects [Janotti and Van de Walle, Phys. Status Solidi B 248, 799 (2011)], we find oxygen vacancies to be related to the fast decay processes, whereas adsorption and desorption processes of oxygen on the ZnO nanowire surface account for the slow part.

  13. ZnO Nanowire-Based Corona Discharge Devices Operated Under Hundreds of Volts

    NASA Astrophysics Data System (ADS)

    Yang, Wenming; Zhu, Rong; Zong, Xianli

    2016-02-01

    Minimizing the voltage of corona discharges, especially when using nanomaterials, has been of great interest in the past decade or so. In this paper, we report a new corona discharge device by using ZnO nanowires operated in atmospheric air to realize continuous corona discharge excited by hundreds of volts. ZnO nanowires were synthesized on microelectrodes using electric-field-assisted wet chemical method, and a thin tungsten film was deposited on the microchip to enhance discharging performance. The testing results showed that the corona inception voltages were minimized greatly by using nanowires compared to conventional dischargers as a result of the local field enhancement of nanowires. The corona could be continuously generated and self-sustaining. It was proved that the law of corona inception voltage obeyed the conventional Peek's breakdown criterion. An optimal thickness of tungsten film coated over ZnO nanowires was figured out to obtain the lowest corona inception voltage. The ion concentration of the nanowire-based discharger attained 1017/m3 orders of magnitude, which is practicable for most discharging applications.

  14. ZnO Nanowire-Based Corona Discharge Devices Operated Under Hundreds of Volts.

    PubMed

    Yang, Wenming; Zhu, Rong; Zong, Xianli

    2016-12-01

    Minimizing the voltage of corona discharges, especially when using nanomaterials, has been of great interest in the past decade or so. In this paper, we report a new corona discharge device by using ZnO nanowires operated in atmospheric air to realize continuous corona discharge excited by hundreds of volts. ZnO nanowires were synthesized on microelectrodes using electric-field-assisted wet chemical method, and a thin tungsten film was deposited on the microchip to enhance discharging performance. The testing results showed that the corona inception voltages were minimized greatly by using nanowires compared to conventional dischargers as a result of the local field enhancement of nanowires. The corona could be continuously generated and self-sustaining. It was proved that the law of corona inception voltage obeyed the conventional Peek's breakdown criterion. An optimal thickness of tungsten film coated over ZnO nanowires was figured out to obtain the lowest corona inception voltage. The ion concentration of the nanowire-based discharger attained 10(17)/m(3) orders of magnitude, which is practicable for most discharging applications.

  15. Chemical bath deposition of ZnO nanowires at near-neutral pH conditions without hexamethylenetetramine (HMTA): understanding the role of HMTA in ZnO nanowire growth.

    PubMed

    McPeak, Kevin M; Le, Thinh P; Britton, Nathan G; Nickolov, Zhorro S; Elabd, Yossef A; Baxter, Jason B

    2011-04-05

    Chemical bath deposition (CBD) is an inexpensive and reproducible method for depositing ZnO nanowire arrays over large areas. The aqueous Zn(NO(3))(2)-hexamethylenetetramine (HMTA) chemistry is one of the most common CBD chemistries for ZnO nanowire synthesis, but some details of the reaction mechanism are still not well-understood. Here, we report the use of in situ attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy to study HMTA adsorption from aqueous solutions onto ZnO nanoparticle films and show that HMTA does not adsorb on ZnO. This result refutes earlier claims that the anisotropic morphology arises from HMTA adsorbing onto and capping the ZnO {10 1 0} faces. We conclude that the role of HMTA in the CBD of ZnO nanowires is only to control the saturation index of ZnO. Furthermore, we demonstrate the first deposition of ZnO nanowire arrays at 90 °C and near-neutral pH conditions without HMTA. Nanowires were grown using the pH buffer 2-(N-morpholino)ethanesulfonic acid (MES) and continuous titratation with KOH to maintain the same pH conditions where growth with HMTA occurs. This semi-batch synthetic method opens many new opportunities to tailor the ZnO morphology and properties by independently controlling temperature and pH.

  16. Synthesis of ZnO nanowire arrays/3D graphene foam and application for determination of levodopa in the presence of uric acid.

    PubMed

    Yue, Hong Yan; Zhang, Hong; Huang, Shuo; Lin, Xuan Yu; Gao, Xin; Chang, Jing; Yao, Long Hui; Guo, Er Jun

    2017-03-15

    Three-dimensional (3D) graphene foam (GF) was prepared by chemical vapor deposition (CVD) using nickel foam as the template. ZnO nanowire arrays (ZnO NWAs) were vertically grown on the 3D GF by hydrothermal synthesis to prepare ZnO NWAs/GF. This hybrid combines the properties of ZnO NWAs and 3D GF, which has favorable electrocatalysis and outstanding electrical conductivity. The vertically aligned ZnO NWAs grown on the GF enlarged the electroactive surface area, which was investigated from the Fe(CN)6(3-4+) redox kinetic study. The ZnO NWAs/GF was used as an electrochemical electrode for the determination of Levodopa (LD) in the presence of uric acid (UA). The electrochemical responses of the ZnO NWAs/GF electrode were investigated by cyclic voltammetry (CV) and differential pulse voltammetry (DPV). The results show that the sensitivity of the electrode for LD is 3.15μAμM(-1) in the concentration range of 0.05-20μM and the measured detection limit of the electrode for LD is 50nM. The electrode also shows good selectivity, reproducibility and stability. The proposed electrode is succsefully used to determine LD in human plasma samples and it is potential for use in clinical research.

  17. Terahertz detectors arrays based on orderly aligned InN nanowires

    NASA Astrophysics Data System (ADS)

    Chen, Xuechen; Liu, Huiqiang; Li, Qiuguo; Chen, Hao; Peng, Rufang; Chu, Sheng; Cheng, Binbin

    2015-08-01

    Nanostructured terahertz detectors employing a single semiconducting nanowire or graphene sheet have recently generated considerable interest as an alternative to existing THz technologies, for their merit on the ease of fabrication and above-room-temperature operation. However, the lack of alignment in nanostructure device hindered their potential toward practical applications. The present work reports ordered terahertz detectors arrays based on neatly aligned InN nanowires. The InN nanostructures (nanowires and nano-necklaces) were achieved by chemical vapor deposition growth, and then InN nanowires were successfully transferred and aligned into micrometer-sized groups by a “transfer-printing” method. Field effect transistors on aligned nanowires were fabricated and tested for terahertz detection purpose. The detector showed good photoresponse as well as low noise level. Besides, dense arrays of such detectors were also fabricated, which rendered a peak responsivity of 1.1 V/W from 7 detectors connected in series.

  18. Terahertz detectors arrays based on orderly aligned InN nanowires

    PubMed Central

    Chen, Xuechen; Liu, Huiqiang; Li, Qiuguo; Chen, Hao; Peng, Rufang; Chu, Sheng; Cheng, Binbin

    2015-01-01

    Nanostructured terahertz detectors employing a single semiconducting nanowire or graphene sheet have recently generated considerable interest as an alternative to existing THz technologies, for their merit on the ease of fabrication and above-room-temperature operation. However, the lack of alignment in nanostructure device hindered their potential toward practical applications. The present work reports ordered terahertz detectors arrays based on neatly aligned InN nanowires. The InN nanostructures (nanowires and nano-necklaces) were achieved by chemical vapor deposition growth, and then InN nanowires were successfully transferred and aligned into micrometer-sized groups by a “transfer-printing” method. Field effect transistors on aligned nanowires were fabricated and tested for terahertz detection purpose. The detector showed good photoresponse as well as low noise level. Besides, dense arrays of such detectors were also fabricated, which rendered a peak responsivity of 1.1 V/W from 7 detectors connected in series. PMID:26289498

  19. Fast synthesis of ultrathin ZnO nanowires by oxidation of Cu/Zn stacks in low-pressure afterglow

    NASA Astrophysics Data System (ADS)

    Altaweel, A.; Imam, A.; Ghanbaja, J.; Mangin, D.; Miska, P.; Gries, T.; Belmonte, T.

    2017-02-01

    The synthesis of ultrathin, single-crystalline zinc oxide nanowires was achieved by treating in a flowing microwave plasma oxidation process, zinc films coated beforehand by a sputtered thin buffer layer of copper. The aspect ratio of the nanowires can be controlled by the following experimental parameters: treatment duration, furnace temperature, oxygen concentration. An average diameter of 6 nm correlated with a mean length of 750 nm can be reached with a fairly high surface number density for very short treatments, typically less than 1 min. The oxidized samples are characterized by means of SEM, XRD, SIMS, HRTEM and EDX techniques. Structural characterization reveals that these nanowires are single-crystalline, with the wurtzite phase of ZnO. Nanowires are only composed of ZnO without copper particles inside or at the end of the nanowires. Temperature-dependent photoluminescence measurements confirm that ZnO nanowires are of high crystalline quality and thin enough to produce quantum confinement.

  20. Fast synthesis of ultrathin ZnO nanowires by oxidation of Cu/Zn stacks in low-pressure afterglow.

    PubMed

    Altaweel, A; Imam, A; Ghanbaja, J; Mangin, D; Miska, P; Gries, T; Belmonte, T

    2017-02-24

    The synthesis of ultrathin, single-crystalline zinc oxide nanowires was achieved by treating in a flowing microwave plasma oxidation process, zinc films coated beforehand by a sputtered thin buffer layer of copper. The aspect ratio of the nanowires can be controlled by the following experimental parameters: treatment duration, furnace temperature, oxygen concentration. An average diameter of 6 nm correlated with a mean length of 750 nm can be reached with a fairly high surface number density for very short treatments, typically less than 1 min. The oxidized samples are characterized by means of SEM, XRD, SIMS, HRTEM and EDX techniques. Structural characterization reveals that these nanowires are single-crystalline, with the wurtzite phase of ZnO. Nanowires are only composed of ZnO without copper particles inside or at the end of the nanowires. Temperature-dependent photoluminescence measurements confirm that ZnO nanowires are of high crystalline quality and thin enough to produce quantum confinement.

  1. Hydrothermal growth of ZnO nanowires on flexible fabric substrates

    NASA Astrophysics Data System (ADS)

    Hong, Gwang-Wook; Yun, Sang-Ho; Kim, Joo-Hyung

    2016-04-01

    ZnO nanowires (NWs) would provide significant enhancement in sensitivity due to high surface to volume ratio. We investigated the first methodical study on the quantitative relationship between the process parameters of solution concentration ratio, structure, and physical and properties of ZnO NWs grown on different flexible fabric surfaces. To develop a fundamental following concerning various substrates, we controlled the growth speed of ZnO NWs and nanowires on cotton surface with easy and moderate cost fabrication method. Using ammonium hydroxide as the reactant with zinc nitrate hexahydrate, ZnO NWs layer have been grown on metal layers, instead of seed layer. ZnO NWs fabrication was done on different fabric substrates such as wool, nylon and polypropylene (PP). After the ZnO NWs grown to each substrates, we coated insulating layer with polyurethane (PU) and ethyl cellulose for prevent external intervention. Detailed electrical characterization was subsequently performed to reveal the working characteristics of the hybrid fabric. For electrical verification of fabricated ZnO NWs, we implemented measurement impact test and material properties with FFT analyzer and LCR meter.

  2. The sensitivity of gas sensor based on single ZnO nanowire modulated by helium ion radiation

    SciTech Connect

    Liao, L.; Lu, H. B.; Li, J. C.; Liu, C.; Fu, D. J.; Liu, Y. L.

    2007-10-22

    In this letter, we present a gas sensor using a single ZnO nanowire as a sensing unit. This ZnO nanowire-based sensor has quick and high sensitive response to H{sub 2}S in air at room temperature. It has also been found that the gas sensitivity of the ZnO nanowires could be modulated and enhanced by He{sup +} implantation at an appropriate dose. A possible explanation is given based on the modulation model of the depletion layer.

  3. Electrodeposition and room temperature ferromagnetic anisotropy of Co and Ni-doped ZnO nanowire arrays

    SciTech Connect

    Cui, J.B.; Gibson, U.J.

    2005-09-26

    Cobalt and nickel doped ZnO nanowire arrays were synthesized by an electrochemical process at a temperature of 90 deg. C. Energy dispersive x-ray spectroscopy and x-ray diffraction show that the dopants are incorporated into the wurtzite-structure ZnO. Anisotropic ferromagnetism with an easy direction of magnetization either perpendicular or parallel to the wire axis, depending on the wire geometry and density, was observed in 1.7% Co and 2.2% Ni-doped ZnO nanowires at room temperature. The anisotropic magnetism was explained in terms of a competition between self-demagnetization and magnetostatic coupling among the nanowires.

  4. Enhanced sputtering and incorporation of Mn in implanted GaAs and ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Johannes, A.; Noack, S.; Paschoal, W., Jr.; Kumar, S.; Jacobsson, D.; Pettersson, H.; Samuelson, L.; Dick, K. A.; Martinez-Criado, G.; Burghammer, M.; Ronning, C.

    2014-10-01

    We simulated and experimentally investigated the sputter yield of ZnO and GaAs nanowires, which were implanted with energetic Mn ions at room temperature. The resulting thinning of the nanowires and the dopant concentration with increasing Mn ion fluency were measured by accurate scanning electron microscopy (SEM) and nano-x-Ray Fluorescence (nanoXRF) quantification, respectively. We observed a clearly enhanced sputter yield for the irradiated nanowires compared to bulk, which is also corroborated by iradina simulations. These show a maximum if the ion range matches the nanowire diameter. As a consequence of the erosion thinning of the nanowire, the incorporation of the Mn dopants is also enhanced and increases non-linearly with increasing ion fluency.

  5. Electronic Structure and Magnetism of Mn-Doped ZnO Nanowires

    PubMed Central

    Zhang, Fuchun; Chao, Dandan; Cui, Hongwei; Zhang, Weihu; Zhang, Weibin

    2015-01-01

    The geometric structures, electronic and magnetic properties of Mn-doped ZnO nanowires were investigated using density functional theory. The results indicated that all the calculated energy differences were negative, and the energy of the ground state was 0.229 eV lower than ferromagnetic coupling, which show higher stability in antiferromagnetic coupling. The calculated results indicated that obvious spin splitting phenomenon occurred near the Femi level. The Zn atoms on the inner layer of ZnO nanowires are easily substituted by Mn atoms along the [0001] direction. It was also shown that the Mn2+-O2−-Mn2+ magnetic coupling formed by intermediate O atom was proved to be caused by orbital hybridization between Mn 3d and O 2p states. The magnetic moments were mainly attributed to the unpaired Mn 3d orbitals, but not relevant with doping position of Mn atoms. Moreover, the optical properties of Mn-doped ZnO nanowires exhibited a novel blue-shifted optical absorption and enhanced ultraviolet-light emission. The above results show that the Mn-doped ZnO nanowires are a new type of magneto-optical materials with great promise.

  6. Spectroscopic investigations of arrays containing vertically and horizontally aligned silicon nanowires

    NASA Astrophysics Data System (ADS)

    Volpati, Diogo; Mårtensson, Niklas; Anttu, Nicklas; Viklund, Per; Sundvall, Christian; Åberg, Ingvar; Bäckström, Joakim; Olin, Håkan; Björk, Mikael T.; Castillo-Leon, Jaime

    2016-12-01

    The properties of nanowire arrays have been investigated mainly in comparison with isolated nanowires or thin films, owing to the difficulty in controlling the nanowire alignment. In this study, we report on arrays containing vertically or horizontally aligned silicon nanowires, whose alignment and structure were determined using x-ray diffraction and scanning electron microscopy. The Raman spectra of the nanowire arrays differ from those of isolated nanowires because of distinct heat dissipation rates of the absorbed energy from the laser, in agreement with recent theoretical calculations. The tailored alignment of the nanowires on solid substrates up to 1 inch of diameter also enabled the observation of resonance modes associated with light trapped into the nanowires. This was proven by comparing the light absorbed and scattered by the arrays, and may be exploited to enhance light harvesting in tandem solar cells. Significantly, the control of the assembly of nanowire arrays may have a direct impact on bottom-up technologies of high anisotropy nanomaterials.

  7. Coordination number model to quantify packing morphology of aligned nanowire arrays.

    PubMed

    Stein, Itai Y; Wardle, Brian L

    2013-03-21

    The average inter-wire spacing in aligned nanowire systems strongly influences both the physical and transport properties of the bulk material. Because most studies assume that the nanowire coordination is constant, a model that provides an analytical relationship between the average inter-wire spacings and measurable physical properties, such as nanowire volume fraction, is necessary. Here we report a continuous coordination number model with an analytical relationship between the average nanowire coordination, diameter, and volume fraction. The model is applied to vertically aligned carbon nanotube (VACNT) and nanofiber (VACNF) arrays, and the effective nanowire coordination number is established from easily accessible measures, such as the nanowire spacing and diameter. VACNT analysis shows that the coordination number increases with increasing nanowire volume fraction, leading the measured inter-CNT spacing values to deviate by as much as 13% from the spacing values predicted by the typically assumed hexagonal packing. VACNF analysis suggests that, by predicting an inter-fiber spacing that is within 6% of the reported value, the continuous coordination model outperforms both square and hexagonal packing in real nanowire arrays. Using this model, the average inter-wire spacing of nanowire arrays can be predicted, thus allowing more precise morphology descriptions, and thereby supporting the development of more accurate structure-property models of bulk materials comprised of aligned nanowires.

  8. Understanding self-aligned planar growth of InAs nanowires.

    PubMed

    Zi, Yunlong; Jung, Kyooho; Zakharov, Dmitri; Yang, Chen

    2013-06-12

    Semiconducting nanowires have attracted lots of attention because of their potential applications. Compared with free-standing nanowires, self-aligned planar nanowires grown epitaxially on the substrate have shown advantageous properties such as being twin defect free and ready for device fabrication, opening potentials for the large-scale device applications. Understanding of planar nanowire growth, which is essential for selective growth of planar vs free-standing wires, is still limited. In this paper, we reported different growth behaviors for self-aligned planar and free-standing InAs nanowires under identical growth conditions. We present a new model based on a revised Gibbs–Thomson equation for the planar nanowires. Using this model, we predicted and successfully confirmed through experiments that higher arsenic vapor partial pressure promoted free-standing InAs nanowire growth. A smaller critical diameter for planar nanowire growth was predicted and achieved experimentally. Successful control and understanding of planar and free-standing nanowire growth established in our work opens up the potential of large-scale integration of self-aligned nanowires for practical device applications.

  9. Ferromagnetism in Gd doped ZnO nanowires: A first principles study

    SciTech Connect

    Aravindh, S. Assa; Schwingenschloegl, Udo E-mail: iman.roqan@kaust.edu.sa; Roqan, Iman S. E-mail: iman.roqan@kaust.edu.sa

    2014-12-21

    In several experimental studies, room temperature ferromagnetism in Gd-doped ZnO nanostructures has been achieved. However, the mechanism and the origin of the ferromagnetism remain controversial. We investigate the structural, magnetic, and electronic properties of Zn{sub 48}O{sub 48} nanowires doped with Gd, using density functional theory. Our findings indicate that substitutionally incorporated Gd atoms prefer occupying the surface Zn sites. Moreover, the formation energy increases with the distance between Gd atoms, signifying that no Gd-Gd segregation occurs in the nanowires within the concentration limit of ≤2%. Gd induces ferromagnetism in ZnO nanowires with magnetic coupling energy up to 21 meV in the neutral state, which increases with additional electron and O vacancy, revealing the role of carriers in magnetic exchange. The potential for achieving room temperature ferromagnetism and high T{sub C} in ZnO:Gd nanowires is evident from the large ferromagnetic coupling energy (200 meV) obtained with the O vacancy. Density of states shows that Fermi level overlaps with Gd f states with the introduction of O vacancy, indicating the possibility of s-f coupling. These results will assist in understanding experimental findings in Gd-doped ZnO nanowires.

  10. Synthesis and characterization of ZnO nanowires by thermal oxidation of Zn thin films at various temperatures.

    PubMed

    Khanlary, Mohammad Reza; Vahedi, Vahid; Reyhani, Ali

    2012-05-02

    In this research high-quality zinc oxide (ZnO) nanowires have been synthesized by thermal oxidation of metallic Zn thin films. Metallic Zn films with thicknesses of 250 nm have been deposited on a glass substrate by the PVD technique. The deposited zinc thin films were oxidized in air at various temperatures ranging between 450 °C to 650 °C. Surface morphology, structural and optical properties of the ZnO nanowires were examined by scanning electron microscope (SEM), X-ray diffraction (XRD), energy dispersive X-ray (EDX) and photoluminescence (PL) measurements. XRD analysis demonstrated that the ZnO nanowires has a wurtzite structure with orientation of (002), and the nanowires prepared at 600 °C has a better crystalline quality than samples prepared at other temperatures. SEM results indicate that by increasing the oxidation temperature, the dimensions of the ZnO nanowires increase. The optimum temperature for synthesizing high density, ZnO nanowires was determined to be 600 °C. EDX results revealed that only Zn and O are present in the samples, indicating a pure ZnO composition. The PL spectra of as-synthesized nanowires exhibited a strong UV emission and a relatively weak green emission.

  11. A comparative study of magnetic and optical properties of Mn-, Gd-, and Nd-doped ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Chakraborty, Arup; Jong, Chol-Sam; Ganguli, Nirmal; Dasgupta, I.

    2017-01-01

    We present a comparative study of magnetism and optical properties for 3d transition metal (TM) (Mn)-doped and 4f rare-earth metals (Gd and Nd)-doped ultrathin ZnO nanowires using ab-initio density functional calculation. Our calculations indicate Nd-doped ZnO nanowires with oxygen vacancies are more favorable for ferromagnetism. Calculations including spin-orbit coupling for Nd-doped ZnO nanowires reveal not only giant anisotropy where magnetism parallel to the nanowire axis is found to be favorable but also stabilized ferromagnetism. We have calculated the absorption spectra for Mn-, Gd- and Nd-doped ZnO nanowires and found that the absorption intensity increases upon increasing the concentration of dopant ions. While Mn-doped ZnO nanowire allows absorption of light in the large energy window ranging from visible to ultraviolet, Gd- and Nd-doped systems absorb light primarily in the ultraviolet region. Our result indicates transition-metal-doped as well as rare-earth-doped ZnO nanowires may be ideal for spintronics and optoelectronic devices.

  12. Fabrication of large-scale ultra-fine Cd-doped ZnO nanowires

    SciTech Connect

    Zhou Shaomin . E-mail: shaominzhou@yahoo.com; Zhang Xiaohong; Meng Xiangmin; Wu Shikang; Lee Shuittong

    2006-02-02

    We demonstrate bulk synthesis of highly crystal Cd-doped ZnO nanowires by using (Cd + Zn) powders at 600 deg. C. These mass ultra-fine ZnO nanowires with about 0%, 1%, 4% and 8% Cd so obtained have been characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDX), selected area electron diffraction (SAED) and high-resolution TEM (HRTEM). They have the uniform diameter of about 20 nm and several hundred microns in length. The growth of the as-synthesized nanowires is suggested for self-catalyzed vapor-liquid-solid.

  13. Characterization and Fabrication of ZnO Nanowires Grown on AlN Thin Film

    SciTech Connect

    Yousefi, Ramin; Kamaluddin, Burhanuddin; Ghoranneviss, Mahmood; Hajakbari, Fatemeh

    2009-07-07

    In this paper, we report ZnO nanowires grown on AlN thin film deposited on glass as substrate by physical vapour deposition. The temperature of substrates was kept between 600 deg. C and 500 deg. C during the growth. The typical average diameters of the obtained nanowires on substrate at 600 deg. C and 500 deg. C was about 57 nm and 22 nm, respectively with several micrometers in lengths. X-ray diffraction and Auger spectroscopy results showed Al diffused from AlN thin film into ZnO nanowires for sample at high temperature zone. In the photoluminescence spectra two emission bands appeared, one related to ultraviolet emission with a strong peak at 380-382 nm, and another related to deep level emission with a weak peak at 510 nm.

  14. Morphology-dependent field emission properties and wetting behavior of ZnO nanowire arrays

    PubMed Central

    2011-01-01

    The fabrication of three kinds of ZnO nanowire arrays with different structural parameters over Au-coated silicon (100) by facile thermal evaporation of ZnS precursor is reported, and the growth mechanism are proposed based on structural analysis. Field emission (FE) properties and wetting behavior were revealed to be strongly morphology dependent. The nanowire arrays in small diameter and high aspect ratio exhibited the best FE performance showing a low turn-on field (4.1 V/μm) and a high field-enhancement factor (1745.8). The result also confirmed that keeping large air within the films was an effective way to obtain super water-repellent properties. This study indicates that the preparation of ZnO nanowire arrays in an optimum structural model is crucial to FE efficiency and wetting behavior. PMID:21711609

  15. Optimization of dielectric matrix for ZnO nanowire based nanogenerators

    NASA Astrophysics Data System (ADS)

    Kannan, Santhosh; Parmar, Mitesh; Tao, Ran; Ardila, Gustavo; Mouis, Mireille

    2016-11-01

    This paper reports the role of selection of suitable dielectric layer in nanogenerator (NG) structure and its influence on the output performance. The basic NG structure is a composite material integrating hydrothermally grown vertical piezoelectric zinc oxide (ZnO) nanowires (NWs) into a dielectric matrix. To accomplish this study, three materials - poly methyl methacrylate (PMMA), silicon nitride (Si3N4) and aluminium oxide (Al2O3) are selected, processed and used as matrix dielectric in NGs. Scanning electron microscopy (SEM) analysis shows the well-aligned NWs with a diameter of 200±50 nm and length of 3.5±0.3 μm. This was followed by dielectric material deposition as a matrix material. After fabricating NG devices, the output generated voltage under manual and automatic bending were recorded, observed and analyzed for the selection of the best dielectric material to obtain an optimum output. The maximum peak-to-peak open-circuit voltage output for PMMA, Si3N4 and Al2O3 under manual bending was recorded as approximately 880 mV, 1.2 V and 2.1 V respectively. These preliminary results confirm the predicted effect of using more rigid dielectrics as matrix material for the NGs. The generated voltage is increased by about 70% using Si3N4 or Al2O3, instead of a less rigid material as PMMA.

  16. One-pot synthesis of ZnO nanowires and belts through orientation attachment mechanism

    NASA Astrophysics Data System (ADS)

    Hossain, Mohammad Kamal

    2017-01-01

    Zinc oxide (ZnO) is one of the promising materials for optoelectronics and advanced electronics-based device fabrication. Nanostructured features include further flavor to the applications as well due to inherent and unprecedented properties. With this view, a sol-gel route for the synthesis of nanostructured ZnO, such as nanoparticles, nanowires and nanobelts subsequently obtained in one-pot has been reported. The process includes synthesis of monodispersed nanoparticles that can find potential applications as gas sensing layers and transparent conducting layers. Hexagonal wurtzite crystal structure with cell constants, a = 3.2427 Ǻ and c = 5.1948 Ǻ was confirmed by X-ray diffraction. Strong preferential growth along {101} plane indicated the growth of ZnO crystallites along c-axis. Vibrational band for Zn-O stretching and deformation modes was confirmed by Fourier transform infrared absorption spectroscopy. A reasonably well-coverage of ZnO nanoparticles, ca. 1 × 107 nanoparticles/cm2 along with size distribution of (13.5 ± 9.0) nm diameter, was obtained by topographic observation of scanning electron microscopy. A series of scanning electron micrographs revealed that as-synthesized nanoparticles were further processed to obtain nanometric wires and belts under controlled conditions. The nanowires were formed from anisotropic agglomeration of nanometric particles, and the belts were formed by agglomeration of these nanometric wires into bundles. A close observation indicated that ZnO nanowires of diameter 40-50 nm were consisted of one to three constituent colloids. Control of these selective agglomeration processes is a key challenge for application of nanowires and belts into useful devices.

  17. Cobalt(II/III) redox electrolyte in ZnO nanowire-based dye-sensitized solar cells.

    PubMed

    Fan, Jiandong; Hao, Yan; Cabot, Andreu; Johansson, Erik M J; Boschloo, Gerrit; Hagfeldt, Anders

    2013-03-01

    In this work, we explore the use of cobalt complex redox shuttles in dye sensitized solar cells (DSCs) based on ZnO nanowires (NWs). Arrays of vertically aligned ZnO NWs produced by a low-cost hydrothermal method are used to fabricate DSCs with [Co(bpy)3](2+/3+) as electrolyte. A direct comparison of the performance of [Co(bpy)3](2+/3+)-based ZnO DSC with I(-)/I3(-)-based ones demonstrates the higher suitability of the cobalt complex, both in terms of a larger open circuit voltage (VOC) and a higher photocurrent. The [Co(bpy)3](2+/3+) electrolyte results in VOC enhancements above 200 mV. This VOC increase is associated to the better match between the cobalt complex redox potential and the oxidation potential of the dye. The incident photon-to-current efficiency (IPCE) enhancement is attributed to a less competitive visible light absorption of the cobalt redox couple. Thus the present study opens new opportunities to improve energy conversion efficiency in ZnO-based DSCs.

  18. Highly aligned arrays of high aspect ratio barium titanate nanowires via hydrothermal synthesis

    SciTech Connect

    Bowland, Christopher C.; Zhou, Zhi; Malakooti, Mohammad H.; Sodano, Henry A.

    2015-06-01

    We report on the development of a hydrothermal synthesis procedure that results in the growth of highly aligned arrays of high aspect ratio barium titanate nanowires. Using a multiple step, scalable hydrothermal reaction, a textured titanium dioxide film is deposited on titanium foil upon which highly aligned nanowires are grown via homoepitaxy and converted to barium titanate. Scanning electron microscope images clearly illustrate the effect the textured film has on the degree of orientation of the nanowires. The alignment of nanowires is quantified by calculating the Herman's Orientation Factor, which reveals a 58% improvement in orientation as compared to growth in the absence of the textured film. The ferroelectric properties of barium titanate combined with the development of this scalable growth procedure provide a powerful route towards increasing the efficiency and performance of nanowire-based devices in future real-world applications such as sensing and power harvesting.

  19. Photosensitization of ZnO nanowires with CdSe quantum dots for photovoltaic devices.

    PubMed

    Leschkies, Kurtis S; Divakar, Ramachandran; Basu, Joysurya; Enache-Pommer, Emil; Boercker, Janice E; Carter, C Barry; Kortshagen, Uwe R; Norris, David J; Aydil, Eray S

    2007-06-01

    We combine CdSe semiconductor nanocrystals (or quantum dots) and single-crystal ZnO nanowires to demonstrate a new type of quantum-dot-sensitized solar cell. An array of ZnO nanowires was grown vertically from a fluorine-doped tin oxide conducting substrate. CdSe quantum dots, capped with mercaptopropionic acid, were attached to the surface of the nanowires. When illuminated with visible light, the excited CdSe quantum dots injected electrons across the quantum dot-nanowire interface. The morphology of the nanowires then provided the photoinjected electrons with a direct electrical pathway to the photoanode. With a liquid electrolyte as the hole transport medium, quantum-dot-sensitized nanowire solar cells exhibited short-circuit currents ranging from 1 to 2 mA/cm2 and open-circuit voltages of 0.5-0.6 V when illuminated with 100 mW/cm2 simulated AM1.5 spectrum. Internal quantum efficiencies as high as 50-60% were also obtained.

  20. Functionalized ZnO nanowires for microcantilever biosensors with enhanced binding capability.

    PubMed

    Stassi, Stefano; Chiadò, Alessandro; Cauda, Valentina; Palmara, Gianluca; Canavese, Giancarlo; Laurenti, Marco; Ricciardi, Carlo

    2017-04-01

    An efficient way to increase the binding capability of microcantilever biosensors is here demonstrated by growing zinc oxide nanowires (ZnO NWs) on their active surface. A comprehensive evaluation of the chemical compatibility of ZnO NWs brought to the definition of an innovative functionalization method able to guarantee the proper immobilization of biomolecules on the nanostructured surface. A noteworthy higher amount of grafted molecules was evidenced with colorimetric assays on ZnO NWs-coated devices, in comparison with functionalized and activated silicon flat samples. ZnO NWs grown on silicon microcantilever arrays and activated with the proposed immobilization strategy enhanced the sensor binding capability (and thus the dynamic range) of nearly 1 order of magnitude, with respect to the commonly employed flat functionalized silicon devices. Graphical Abstract An efficient way to increase the binding capability of microcantilever biosensors is represented by growing zinc oxide nanowires (ZnO NWs) on their active surface. ZnO NWs grown on silicon microcantilever arrays and activated with an innovative immobilization strategy enhanced the sensor binding capability of nearly 1 order of magnitude, with respect to the commonly employed flat functionalized silicon devices.

  1. Compared growth mechanisms of Zn-polar ZnO nanowires on O-polar ZnO and on sapphire.

    PubMed

    Perillat-Merceroz, G; Thierry, R; Jouneau, P H; Ferret, P; Feuillet, G

    2012-03-30

    Controlling the growth of zinc oxide nanowires is necessary to optimize the performance of nanowire-based devices such as photovoltaic solar cells, nano-generators, or light-emitting diodes. With this in mind, we investigate the nucleation and growth mechanisms of ZnO nanowires grown by metalorganic vapor phase epitaxy either on O-polar ZnO or on sapphire substrates. Whatever the substrate, ZnO nanowires are Zn-polar, as demonstrated by convergent beam electron diffraction. For growth on O-polar ZnO substrate, the nanowires are found to sit on O-polar pyramids. As growth proceeds, the inversion domain boundary moves up in order to remain at the top of the O-polar pyramids. For growth on sapphire substrates, the nanowires may also originate from the sapphire/ZnO interface. The presence of atomic steps and the non-polar character of sapphire could be the cause of the Zn-polar crystal nucleation on sapphire, whereas it is proposed that the segregation of aluminum impurities could account for the nucleation of inverted domains for growth on O-polar ZnO.

  2. Alignment control and atomically-scaled heteroepitaxial interface study of GaN nanowires.

    PubMed

    Liu, Qingyun; Liu, Baodan; Yang, Wenjin; Yang, Bing; Zhang, Xinglai; Labbé, Christophe; Portier, Xavier; An, Vladimir; Jiang, Xin

    2017-04-11

    Well-aligned GaN nanowires are promising candidates for building high-performance optoelectronic nanodevices. In this work, we demonstrate the epitaxial growth of well-aligned GaN nanowires on a [0001]-oriented sapphire substrate in a simple catalyst-assisted chemical vapor deposition process and their alignment control. It is found that the ammonia flux plays a key role in dominating the initial nucleation of GaN nanocrystals and their orientation. Typically, significant improvement of the GaN nanowire alignment can be realized at a low NH3 flow rate. X-ray diffraction and cross-sectional scanning electron microscopy studies further verified the preferential orientation of GaN nanowires along the [0001] direction. The growth mechanism of GaN nanowire arrays is also well studied based on cross-sectional high-resolution transmission electron microscopy (HRTEM) characterization and it is observed that GaN nanowires have good epitaxial growth on the sapphire substrate following the crystallographic relationship between (0001)GaN∥(0001)sapphire and (101[combining macron]0)GaN∥(112[combining macron]0)sapphire. Most importantly, periodic misfit dislocations are also experimentally observed in the interface region due to the large lattice mismatch between the GaN nanowire and the sapphire substrate, and the formation of such dislocations will favor the release of structural strain in GaN nanowires. HRTEM analysis also finds the existence of "type I" stacking faults and voids inside the GaN nanowires. Optical investigation suggests that the GaN nanowire arrays have strong emission in the UV range, suggesting their crystalline nature and chemical purity. The achievement of aligned GaN nanowires will further promote the wide applications of GaN nanostructures toward diverse high-performance optoelectronic nanodevices including nano-LEDs, photovoltaic cells, photodetectors etc.

  3. Novel epoxy-silicone thermolytic transparent packaging adhesives chemical modified by ZnO nanowires for HB LEDs

    NASA Astrophysics Data System (ADS)

    He, Ying; Wang, Jun-An; Pei, Chang-Long; Song, Ji-Zhong; Zhu, Di; Chen, Jie

    2010-10-01

    A novel high transparent thermolytic epoxy-silicone for high-brightness light-emitting diode (HB-LED) is introduced, which was synthesized by polymerization using silicone matrix via diglycidyl ether bisphenol-A epoxy resin (DGEBA) as reinforcing agent, and filling ZnO nanowires to modify thermal conductivity and control refractive index of the hybrid material. The interactions of ZnO nanowires with polymers are mediated by the ligands attached to the nanoparticles. Thus, the ligands markedly influence the properties of ZnO nanowires/epoxy-silicone composites. The refractive indices of the prepared hybrid adhesives can be tuned by the ZnO nanowires from 1.4711 to 1.5605. Light transmittance can be increased by 20% from 80 to 95%. The thermal conductivity of the transparent packaging adhesives is 0.89-0.90 W/mK.

  4. ZnO nanowires array grown on Ga-doped ZnO single crystal for dye-sensitized solar cells.

    PubMed

    Hu, Qichang; Li, Yafeng; Huang, Feng; Zhang, Zhaojun; Ding, Kai; Wei, Mingdeng; Lin, Zhang

    2015-06-23

    High quality ZnO nanowires arrays were homoepitaxial grown on Ga-doped ZnO single crystal (GZOSC), which have the advantages of high conductivity, high carrier mobility and high thermal stability. When it was employed as a photoanode in the DSSCs, the cell exhibited a 1.44% power-conversion efficiency under the illumination of one sun (AM 1.5G). The performance is superior to our ZnO nanowires/FTO based DSSCs under the same condition. This enhanced performance is mainly attributed to the perfect interface between the ZnO nanowires and the GZOSC substrate that contributes to lower carrier scattering and recombination rates compared with that grown on traditional FTO substrate.

  5. ZnO nanowires array grown on Ga-doped ZnO single crystal for dye-sensitized solar cells

    PubMed Central

    Hu, Qichang; Li, Yafeng; Huang, Feng; Zhang, Zhaojun; Ding, Kai; Wei, Mingdeng; Lin, Zhang

    2015-01-01

    High quality ZnO nanowires arrays were homoepitaxial grown on Ga-doped ZnO single crystal (GZOSC), which have the advantages of high conductivity, high carrier mobility and high thermal stability. When it was employed as a photoanode in the DSSCs, the cell exhibited a 1.44% power-conversion efficiency under the illumination of one sun (AM 1.5G). The performance is superior to our ZnO nanowires/FTO based DSSCs under the same condition. This enhanced performance is mainly attributed to the perfect interface between the ZnO nanowires and the GZOSC substrate that contributes to lower carrier scattering and recombination rates compared with that grown on traditional FTO substrate. PMID:26099568

  6. Smartly aligning nanowires by a stretching strategy and their application as encoded sensors.

    PubMed

    Wu, Yuchen; Su, Bin; Jiang, Lei

    2012-10-23

    The nanotechnology world is being more and more attracted toward high aspect ratio one-dimensional nanostructures due to their potentials as building blocks for electronic/optical devices. Here, we propose a novel method to generate nanowire patterns with assistance of superhydrophobic flexible polydimethylsiloxane (PDMS) substrates. Micropillar gaps are tunable via a stretching process of the PDMS surface; thus, diverse nanowire patterns can be formed by stretching the same PDMS surface in various ways. Importantly, square nanowire loops with alternative compositions can be generated through a double-stretching process, showing an advanced methodology in controlling the alignment of nanowires. Since alternative fluorescent molecules will be quenched by diverse chemical substances, this alternative nanowire loop shows a selective detection for diverse target compounds, which greatly improves the application of this nanowire patterning approach. Furthermore, such alternative nanowire patterns can be transferred from pillar-structured surfaces to flat films, indicating further potentials in microcircuits, sensitive sensors, and other organic functional nanodevices.

  7. Structure and opto-electrochemical properties of ZnO nanowires grown on n-Si substrate.

    PubMed

    Ladanov, Mikhail; Ram, Manoj K; Matthews, Garrett; Kumar, Ashok

    2011-07-19

    Zinc oxide (ZnO) nanostructures have attracted great attention as a promising functional material with unique properties suitable for applications in UV lasers, light emitting diodes, field emission devices, sensors, field effect transistors, and solar cells. In the present work, ZnO nanowires have been synthesized on an n-type Si substrate using a hydrothermal method where surfactant acted as a modifying and protecting agent. The surface morphology, electrochemical properties, and opto-electrochemical properties of ZnO nanowires are investigated by using scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), cyclic voltammetry, and impedance spectroscopy techniques. The cycling characteristics and rate capability of the ZnO nanowires are explored through electrochemical studies performed under varying electrolytes. The photo response is observed using UV radiation. It is demonstrated that crystallinity, particle size, and morphology all play significant roles in the electrochemical performance of the ZnO electrodes.

  8. Opto-mechano-electrical tripling in ZnO nanowires probed by photocurrent spectroscopy in a high-resolution transmission electron microscope

    SciTech Connect

    Zhang, C.; Golberg, D. E-mail: golberg.dmitri@nims.go.jp; Xu, Z. E-mail: golberg.dmitri@nims.go.jp; Kvashnin, D. G.; Tang, D.-M.; Xue, Y. M.; Bando, Y.; Sorokin, P. B.

    2015-08-31

    Photocurrent spectroscopy of individual free-standing ZnO nanowires inside a high-resolution transmission electron microscope (TEM) is reported. By using specially designed optical in situ TEM system capable of scanning tunneling microscopy probing paired with light illumination, opto-mechano-electrical tripling phenomenon in ZnO nanowires is demonstrated. Splitting of photocurrent spectra at around 3.3 eV under in situ TEM bending of ZnO nanowires directly corresponds to nanowire deformation and appearance of expanded and compressed nanowire sides. Theoretical simulation of a bent ZnO nanowire has an excellent agreement with the experimental data. The splitting effect could be explained by a change in the valence band structure of ZnO nanowires due to a lattice strain. The strain-induced splitting provides important clues for future flexible piezo-phototronics.

  9. Opto-mechano-electrical tripling in ZnO nanowires probed by photocurrent spectroscopy in a high-resolution transmission electron microscope

    NASA Astrophysics Data System (ADS)

    Zhang, C.; Xu, Z.; Kvashnin, D. G.; Tang, D.-M.; Xue, Y. M.; Bando, Y.; Sorokin, P. B.; Golberg, D.

    2015-08-01

    Photocurrent spectroscopy of individual free-standing ZnO nanowires inside a high-resolution transmission electron microscope (TEM) is reported. By using specially designed optical in situ TEM system capable of scanning tunneling microscopy probing paired with light illumination, opto-mechano-electrical tripling phenomenon in ZnO nanowires is demonstrated. Splitting of photocurrent spectra at around 3.3 eV under in situ TEM bending of ZnO nanowires directly corresponds to nanowire deformation and appearance of expanded and compressed nanowire sides. Theoretical simulation of a bent ZnO nanowire has an excellent agreement with the experimental data. The splitting effect could be explained by a change in the valence band structure of ZnO nanowires due to a lattice strain. The strain-induced splitting provides important clues for future flexible piezo-phototronics.

  10. Three-dimensional mesoscale heterostructures of ZnO nanowire arrays epitaxially grown on CuGaO2 nanoplates as individual diodes.

    PubMed

    Forticaux, Audrey; Hacialioglu, Salih; DeGrave, John P; Dziedzic, Rafal; Jin, Song

    2013-09-24

    We report a three-dimensional (3D) mesoscale heterostructure composed of one-dimensional (1D) nanowire (NW) arrays epitaxially grown on two-dimensional (2D) nanoplates. Specifically, three facile syntheses are developed to assemble vertical ZnO NWs on CuGaO2 (CGO) nanoplates in mild aqueous solution conditions. The key to the successful 3D mesoscale integration is the preferential nucleation and heteroepitaxial growth of ZnO NWs on the CGO nanoplates. Using transmission electron microscopy, heteroepitaxy was found between the basal planes of CGO nanoplates and ZnO NWs, which are their respective (001) crystallographic planes, by the observation of a hexagonal Moiré fringes pattern resulting from the slight mismatch between the c planes of ZnO and CGO. Careful analysis shows that this pattern can be described by a hexagonal supercell with a lattice parameter of almost exactly 11 and 12 times the a lattice constants for ZnO and CGO, respectively. The electrical properties of the individual CGO-ZnO mesoscale heterostructures were measured using a current-sensing atomic force microscopy setup to confirm the rectifying p-n diode behavior expected from the band alignment of p-type CGO and n-type ZnO wide band gap semiconductors. These 3D mesoscale heterostructures represent a new motif in nanoassembly for the integration of nanomaterials into functional devices with potential applications in electronics, photonics, and energy.

  11. Plasma versus thermal annealing for the Au-catalyst growth of ZnO nanocones and nanowires on Al-doped ZnO buffer layers

    NASA Astrophysics Data System (ADS)

    Güell, Frank; Martínez-Alanis, Paulina R.; Roso, Sergio; Salas-Pérez, Carlos I.; García-Sánchez, Mario F.; Santana, Guillermo; Marel Monroy, B.

    2016-06-01

    We successfully synthesized ZnO nanocones and nanowires over polycrystalline Al-doped ZnO (AZO) buffer layers on fused silica substrates by a vapor-transport process using Au-catalyst thin films. Different Au film thicknesses were thermal or plasma annealed in order to analyze their influence on the ZnO nanostructure growth morphology. Striking differences have been observed. Thermal annealing generates a distribution of Au nanoclusters and plasma annealing induces a fragmentation of the Au thin films. While ZnO nanowires are found in the thermal-annealed samples, ZnO nanocones and nanowires have been obtained on the plasma-annealed samples. Enhancement of the preferred c-axis (0001) growth orientation was demonstrated by x-ray diffraction when the ZnO nanocones and nanowires have been grown over the AZO buffer layer. The transmittance spectra of the ZnO nanocones and nanowires show a gradual increase from 375 to 900 nm, and photoluminescence characterization pointed out high concentration of defects leading to observation of a broad emission band in the visible range from 420 to 800 nm. The maximum emission intensity peak position of the broad visible band is related to the thickness of the Au-catalyst for the thermal-annealed samples and to the plasma power for the plasma-annealed samples. Finally, we proposed a model for the plasma versus thermal annealing of the Au-catalyst for the growth of the ZnO nanocones and nanowires. These results are promising for renewable energy applications, in particular for its potential application in solar cells.

  12. Synthesis of ZnO nanowires for thin film network transistors

    NASA Astrophysics Data System (ADS)

    Dalal, S. H.; Unalan, H. E.; Zhang, Y.; Hiralal, Pritesh; Gangloff, L.; Flewitt, Andrew J.; Amaratunga, Gehan A. J.; Milne, William I.

    2008-08-01

    Zinc oxide nanowire networks are attractive as alternatives to organic and amorphous semiconductors due to their wide bandgap, flexibility and transparency. We demonstrate the fabrication of thin film transistors (TFT)s which utilize ZnO nanowires as the semiconducting channel. These thin film transistors can be transparent and flexible and processed at low temperatures on to a variety of substrates. The nanowire networks are created using a simple contact transfer method that is easily scalable. Apparent nanowire network mobility values can be as high as 3.8 cm2/Vs (effective thin film mobility: 0.03 cm2/Vs) in devices with 20μm channel lengths and ON/OFF ratios of up to 104.

  13. ZnO Hemisphere Pits Nanowire/CdS Photoelectrode for High-Efficiency Photoelectrochemical Water Splitting

    NASA Astrophysics Data System (ADS)

    Chen, Peiyang; Liu, Zhifeng; Geng, Xuemin; Wang, Jialu; Zhang, Min; Liu, Junqi; Yan, Lu

    2016-12-01

    In this paper, a ZnO hemisphere pits nanowire (HPW) photoelectrode is fabricated by using polystyrene (PS) nanospheres as templates, and CdS is deposited on ZnO nanowires to improve further its photoelectrochemical performance. Firstly, PS nanospheres are deposited on ZnO seed layers by air-liquid interface self-assembling method. Subsequently, ZnO HPWs are grown which effected by PS nanospheres. Finally, CdS nanoparticles were deposited on the ZnO HPWs to construct ZnO/CdS heterojunction photoanodes by successive ionic layer adsorption and reaction method. This hemisphere pits nanowires composite structure demonstrated a highly efficient photoelectrocatalytic performance with a remarkable photocurrent density of 2.27 mA cm-2 determined at 0.8 V versus Ag/AgCl. The enhanced performance of ZnO hemisphere pits nanowires/CdS nanoparticles (ZnO/CdS) composite photoanodes originated from the enhanced light absorption in the visible region and reduced photogenerated charges recombination rate. Furthermore, compared with ordinary nanowire arrays, hemisphere pits nanowire structure can reflect light more times to facilitate light harvesting. This work exhibits the important significance in constructing photoelectrodes for photoelectrochemical water splitting and other photoelectric devices.

  14. ZnO Hemisphere Pits Nanowire/CdS Photoelectrode for High-Efficiency Photoelectrochemical Water Splitting

    NASA Astrophysics Data System (ADS)

    Chen, Peiyang; Liu, Zhifeng; Geng, Xuemin; Wang, Jialu; Zhang, Min; Liu, Junqi; Yan, Lu

    2017-03-01

    In this paper, a ZnO hemisphere pits nanowire (HPW) photoelectrode is fabricated by using polystyrene (PS) nanospheres as templates, and CdS is deposited on ZnO nanowires to improve further its photoelectrochemical performance. Firstly, PS nanospheres are deposited on ZnO seed layers by air-liquid interface self-assembling method. Subsequently, ZnO HPWs are grown which effected by PS nanospheres. Finally, CdS nanoparticles were deposited on the ZnO HPWs to construct ZnO/CdS heterojunction photoanodes by successive ionic layer adsorption and reaction method. This hemisphere pits nanowires composite structure demonstrated a highly efficient photoelectrocatalytic performance with a remarkable photocurrent density of 2.27 mA cm-2 determined at 0.8 V versus Ag/AgCl. The enhanced performance of ZnO hemisphere pits nanowires/CdS nanoparticles (ZnO/CdS) composite photoanodes originated from the enhanced light absorption in the visible region and reduced photogenerated charges recombination rate. Furthermore, compared with ordinary nanowire arrays, hemisphere pits nanowire structure can reflect light more times to facilitate light harvesting. This work exhibits the important significance in constructing photoelectrodes for photoelectrochemical water splitting and other photoelectric devices.

  15. The Influence of Short-Range Correlation on the Phonon Confinement of a Single ZnO Nanowire.

    PubMed

    Shih, Po-Hsun; Wu, Sheng Yun

    2017-12-01

    Plenty of researches have been performed to probe the diverse properties of ZnO nanowires, but only a few have focused on the physical properties of a single nanowire since to analyze the optical confinement and their correlation lengths along a single nanowire is difficult. In this study, a single ZnO nanowire was synthesized using a Ti-assisted chemical vapor deposition (CVD) method to avoid the appearance of catalytic contamination. Confocal Raman spectroscopy is a powerful tool for probing the phonon confinement effect in a single ZnO nanowire. A confinement model was used to calculate the correlation lengths along the growth direction. The Raman mapping of ZnO nanowires was obtained by a confocal Raman spectrometer. A phonon confinement model was used to fit the Raman curves of the E2 mode and to obtain the correlation lengths along the growth direction of the ZnO nanowire. The correlation lengths are related to the phonon confined region by boundaries and/or defects.

  16. Catalyst-free ZnO nanowires on silicon by pulsed laser deposition with tunable density and aspect ratio

    NASA Astrophysics Data System (ADS)

    Susner, M. A.; Carnevale, S. D.; Kent, T. F.; Gerber, L. M.; Phillips, P. J.; Sumption, M. D.; Myers, R. C.

    2014-08-01

    ZnO nanostructures were grown on Si(1 1 1) via pulsed laser deposition. The morphology of the ZnO was tunable based on the pressure of the atmosphere during deposition: deposition in vacuum produced a thin film, deposition at intermediate pressures (75 mTorr) yielded nanoclusters of ZnO and deposition at higher pressures (>250 mTorr) produced c-axis oriented nanowires. Through variation of the deposition temperature and pressure it was possible to control the nanowire density, height, and diameter. Room temperature photoluminescence spectroscopy reveals exciton to defect peak ratios greater than 100 suggesting much greater stoichiometry and reduced defect density than found in catalyst-formed ZnO nanowires. The evolution of the ZnO nanowire growth was examined through X-ray diffraction and electron microscopy. Using a two-step deposition procedure involving depositing a seed layer at a low temperature with further deposition at a higher temperature we were able to increase the height of the nanowires without increasing the diameter. These two-step structures were seen to come in two morphological forms - ZnO needles and porous, nested ZnO nanostructures.

  17. Nonvolatile memory functionality of ZnO nanowire transistors controlled by mobile protons.

    PubMed

    Yoon, Jongwon; Hong, Woong-Ki; Jo, Minseok; Jo, Gunho; Choe, Minhyeok; Park, Woojin; Sohn, Jung Inn; Nedic, Stanko; Hwang, Hyungsang; Welland, Mark E; Lee, Takhee

    2011-01-25

    We demonstrated the nonvolatile memory functionality of ZnO nanowire field effect transistors (FETs) using mobile protons that are generated by high-pressure hydrogen annealing (HPHA) at relatively low temperature (400 °C). These ZnO nanowire devices exhibited reproducible hysteresis, reversible switching, and nonvolatile memory behaviors in comparison with those of the conventional FET devices. We show that the memory characteristics are attributed to the movement of protons between the Si/SiO(2) interface and the SiO(2)/ZnO nanowire interface by the applied gate electric field. The memory mechanism is explained in terms of the tuning of interface properties, such as effective electric field, surface charge density, and surface barrier potential due to the movement of protons in the SiO(2) layer, consistent with the UV photoresponse characteristics of nanowire memory devices. Our study will further provide a useful route of creating memory functionality and incorporating proton-based storage elements onto a modified CMOS platform for FET memory devices using nanomaterials.

  18. Shear induced simultaneous consolidation and alignment of silicon nanowires into ingots using equal channel angular extrusion (ECAE)

    NASA Astrophysics Data System (ADS)

    Vasiraju, Venkata; Brockway, Lance; Balachandran, Shreyas; Srinivasa, Arun; Vaddiraju, Sreeram

    2015-01-01

    Shear induced simultaneous consolidation and assembly of nanowires accomplished using equal channel angular extrusion (ECAE) is studied and reported. The intent is to use processing of large quantities of nanowires directly in their original solid state to not only consolidate them, but also to align them, without destroying or altering their morphologies in the process. The results indicate that ECAE is useful to consolidate nanowire powders into mechanically robust pellets at room temperature, without the need for any elevated temperature processing. The preliminary results also indicate that in certain regions of the consolidated nanowire pellets, alignment of the nanowires is also possible. The interlocking of the rough surfaces of the silicon nanowires during ECAE is believed to be responsible for the mechanical robustness of the nanowire pellets. It is believed that such simultaneous consolidation and alignment of nanowires allows for using the anisotropic properties of nanowires in energy conversion device fabrication.

  19. High efficiency dye-sensitized solar cells based on three-dimensional multilayered ZnO nanowire arrays with "caterpillar-like" structure.

    PubMed

    McCune, Mallarie; Zhang, Wei; Deng, Yulin

    2012-07-11

    A 3D ZnO nanowire-based dye-sensitized solar cell (DSSC) with unique "caterpillar-like" structure was designed. Because of the significant improvement of the total ZnO nanowire surface area, the amount of light absorption was substantially increased. This increase in the light harvesting efficiency enables us to achieve an overall power conversion efficiency as high as 5.20%, which is the highest reported value to date for ZnO nanowire-based DSSCs. A branched-multilayered design of ZnO nanowire arrays grown from ZnO nanofiber seed layers proves to be very successful in fabricating 3D ZnO nanowire arrays. Practically, electrospun ZnO nanowires were used as the seeds in multilayer growth of ZnO nanowire arrays with a unique "caterpillar-like" structure. This unique structure significantly enhances the surface area of the ZnO nanowire arrays, leading to higher short-circuit currents. Additionally, this design resulted in closer spacing between the nanowires and more direct conduction pathways for electron transfer. Thus, the open-circuit voltage was so significantly improved as a direct result of the reduction in electron recombination.

  20. First principles investigations on the electronic structure of anchor groups on ZnO nanowires and surfaces

    SciTech Connect

    Dominguez, A.; Lorke, M.; Rosa, A. L.; Frauenheim, Th.; Schoenhalz, A. L.; Dalpian, G. M.; Rocha, A. R.

    2014-05-28

    We report on density functional theory investigations of the electronic properties of monofunctional ligands adsorbed on ZnO-(1010) surfaces and ZnO nanowires using semi-local and hybrid exchange-correlation functionals. We consider three anchor groups, namely thiol, amino, and carboxyl groups. Our results indicate that neither the carboxyl nor the amino group modify the transport and conductivity properties of ZnO. In contrast, the modification of the ZnO surface and nanostructure with thiol leads to insertion of molecular states in the band gap, thus suggesting that functionalization with this moiety may customize the optical properties of ZnO nanomaterials.

  1. Tuning physical and optical properties of ZnO nanowire arrays grown on cotton fibers.

    PubMed

    Athauda, Thushara J; Hari, Parameswar; Ozer, Ruya R

    2013-07-10

    This article reports the first systematic study on the quantitative relationship between the process parameters of solution concentration ratio, structure, and physical and optical properties of ZnO nanowires grown on cotton surfaces. To develop a fundamental understanding concerning the process-structure-activity relations, we grew a series of well-defined, radially oriented, highly dense, and uniform single-crystalline ZnO nanorods and nanoneedles on cotton surfaces by a simple and inexpensive two-step optimized hydrothermal process at a relatively low temperature. This process involves seed treatment of a cotton substrate with ZnO nanocrystals that will serve as the nucleation sites for subsequent anisotropic growth of single crystalline ZnO nanowires. All of the ZnO nanowires exhibit wurtzite crystal structure oriented along the c-axis. For investigating structure-controlled properties, seed-to-growth solutions concentrations ratio ([S]/[G]) of the synthesis process was varied over six different values. Superhydrophobicity was achieved for all morphologies after 1-dodecanethiol modification, which was highly durable after prolonged UV irradiation. Durability of the ZnO materials under laundry condition was also verified. Variation of the [S]/[G] ratio resulted in a morphological transform from nanorods to needle-like structures in conjunction with a drastic change in the physical and optical properties of the ZnO modified cotton surfaces. Higher [S]/[G] ratios yielded formation of ZnO nanoneedles with high degree of crystallinity and higher aspect ratio compared to nanorods. Increasing [S]/[G] ratio resulted in the amount of ZnO grown on the cotton surface to drop significantly, which also caused a decrease in the surface hydrophobicity and UV absorption. In addition, room temperature photoluminescence measurements revealed that the band gap of ZnO widened and the structural defects were reduced as the morphology changed from nanorods to nanoneedles. A similar

  2. Hyperbolic and plasmonic properties of silicon/Ag aligned nanowire arrays.

    PubMed

    Prokes, S M; Glembocki, Orest J; Livenere, J E; Tumkur, T U; Kitur, J K; Zhu, G; Wells, B; Podolskiy, V A; Noginov, M A

    2013-06-17

    The hyperbolic and plasmonic properties of silicon nanowire/Ag arrays have been investigated. The aligned nanowire arrays were formed and coated by atomic layer deposition of Ag, which itself is a metamaterial due to its unique mosaic film structure. The theoretical and numerical studies suggest that the fabricated arrays have hyperbolic dispersion in the visible and IR ranges of the spectrum. The theoretical predictions have been indirectly confirmed by polarized reflection spectra, showing reduction of the reflection in p polarization in comparison to that in s polarization. Studies of dye emission on top of Si/Ag nanowire arrays show strong emission quenching and shortening of dye emission kinetics. This behavior is also consistent with the predictions for hyperbolic media. The measured SERS signals were enhanced by almost an order of magnitude for closely packed and aligned nanowires, compared to random nanowire composites. These results agree with electric field simulations of these array structures.

  3. Low-Temperature Preparation of Ag-Doped ZnO Nanowire Arrays, DFT Study, and Application to Light-Emitting Diode.

    PubMed

    Pauporté, Thierry; Lupan, Oleg; Zhang, Jie; Tugsuz, Tugba; Ciofini, Ilaria; Labat, Frédéric; Viana, Bruno

    2015-06-10

    Doping ZnO nanowires (NWs) by group IB elements is an important challenge for integrating nanostructures into functional devices with better and tuned performances. The growth of Ag-doped ZnO NWs by electrodeposition at 90 °C using a chloride bath and molecular oxygen precursor is reported. Ag acts as an electrocatalyst for the deposition and influences the nucleation and growth of the structures. The silver atomic concentration in the wires is controlled by the additive concentration in the deposition bath and a content up to 3.7 atomic % is reported. XRD analysis shows that the integration of silver enlarges the lattice parameters of ZnO. The optical measurements also show that the direct optical bandgap of ZnO is reduced by silver doping. The bandgap shift and lattice expansion are explained by first principle calculations using the density functional theory (DFT) on the silver impurity integration as an interstitial (Ag(i)) and as a substitute of zinc atom (Ag(Zn)) in the crystal lattice. They notably indicate that Ag(Zn) doping forms an impurity band because of Ag 4d and O 2p orbital interactions, shifting the Fermi level toward the valence band. At least, Ag-doped ZnO vertically aligned nanowire arrays have been epitaxially grown on GaN(001) substrate. The heterostructure has been inserted in a light emitting device. UV-blue light emission has been achieved with a low emission threshold of 5 V and a tunable red-shifted emission spectrum related to the bandgap reduction induced by silver doping of the ZnO emitter material.

  4. MOCVD growth of vertically aligned InGaN nanowires

    NASA Astrophysics Data System (ADS)

    Kuo, H. C.; Su Oh, Tae; Ku, P.-C.

    2013-05-01

    In this work, we report the growth of vertically aligned bulk InGaN nanowires (NWs) on r-plane sapphire substrate by metal organic chemical vapor deposition (MOCVD). Through the optimization process of growth conditions, such as growth temperature and pressure, we obtained high density InGaN NWs consisting of one (0001) polar- and two equivalent {1101} semi-polar planes. We have shown the highest InGaN NWs wire density of 8×108 cm-2,with an average diameter of 300 nm and a length of 2 μm. From results of photoluminescence (PL) at 30 K and 300 K, we observed the intense and broad emission peak from InGaN NWs at around 595 nm, and confirmed that the luminescence could be tuned from 580 nm to 660 nm by controlling the indium flow (TMIn) rate. Our results indicate that MOCVD-grown InGaN NWs can be effective absorbers of the blue-green range of solar spectrum and may be one of the good candidates for high efficiency photovoltaic devices targeting at blue-green photons.

  5. Thermal Conduction in Vertically Aligned Copper Nanowire Arrays and Composites.

    PubMed

    Barako, Michael T; Roy-Panzer, Shilpi; English, Timothy S; Kodama, Takashi; Asheghi, Mehdi; Kenny, Thomas W; Goodson, Kenneth E

    2015-09-02

    The ability to efficiently and reliably transfer heat between sources and sinks is often a bottleneck in the thermal management of modern energy conversion technologies ranging from microelectronics to thermoelectric power generation. These interfaces contribute parasitic thermal resistances that reduce device performance and are subjected to thermomechanical stresses that degrade device lifetime. Dense arrays of vertically aligned metal nanowires (NWs) offer the unique combination of thermal conductance from the constituent metal and mechanical compliance from the high aspect ratio geometry to increase interfacial heat transfer and device reliability. In the present work, we synthesize copper NW arrays directly onto substrates via templated electrodeposition and extend this technique through the use of a sacrificial overplating layer to achieve improved uniformity. Furthermore, we infiltrate the array with an organic phase change material and demonstrate the preservation of thermal properties. We use the 3ω method to measure the axial thermal conductivity of freestanding copper NW arrays to be as high as 70 W m(-1) K(-1), which is more than an order of magnitude larger than most commercial interface materials and enhanced-conductivity nanocomposites reported in the literature. These arrays are highly anisotropic, and the lateral thermal conductivity is found to be only 1-2 W m(-1) K(-1). We use these measured properties to elucidate the governing array-scale transport mechanisms, which include the effects of morphology and energy carrier scattering from size effects and grain boundaries.

  6. Fabrication and optical simulation of vertically aligned silicon nanowires

    NASA Astrophysics Data System (ADS)

    Hossain, M. K.; Salhi, B.; Mukhaimer, A. W.; Al-Sulaiman, F. A.

    2016-10-01

    Silicon nanowires (Si-NWs) have been considered widely as a perfect light absorber with strong evidence of enhanced optical functionalities. Here we report finite-difference time-domain simulations for Si-NWs to elucidate the key factors that determine enhanced light absorption, energy flow behavior, electric field profile, and excitons generation rate distribution. To avoid further complexity, a single Si-NW of cylindrical shape was modeled on c-Si and optimized to elucidate the aforementioned characteristics. Light absorption and energy flow distribution confirmed that Si-NW facilitates to confine photon absorption of several orders of enhancement whereas the energy flow is also distributed along the wire itself. With reference to electric field and excitons generation distribution it was revealed that Si-NW possesses the sites of strongest field distributions compared to those of flat silicon wafer. To realize the potential of Si-NWs-based thin film solar cell, a simple process was adopted to acquire vertically aligned Si-NWs grown on c-Si wafer. Further topographic characterizations were conducted through scanning electron microscope and tunneling electron microscope-coupled energy-dispersive spectroscopy.

  7. In-situ optical transmission electron microscope study of exciton phonon replicas in ZnO nanowires by cathodoluminescence

    SciTech Connect

    Yang, Shize; Tian, Xuezeng; Wang, Lifen; Wei, Jiake; Qi, Kuo; Li, Xiaomin; Xu, Zhi E-mail: xdbai@iphy.ac.cn Wang, Wenlong; Zhao, Jimin; Bai, Xuedong E-mail: xdbai@iphy.ac.cn; Wang, Enge E-mail: xdbai@iphy.ac.cn

    2014-08-18

    The cathodoluminescence spectrum of single zinc oxide (ZnO) nanowires is measured by in-situ optical Transmission Electron Microscope. The coupling between exciton and longitudinal optical phonon is studied. The band edge emission varies for different excitation spots. This effect is attributed to the exciton propagation along the c axis of the nanowire. Contrary to free exciton emission, the phonon replicas are well confined in ZnO nanowire. They travel along the c axis and emit at the end surface. Bending strain increases the relative intensity of second order phonon replicas when excitons travel along the c-axis.

  8. Depletion-mode ZnO nanowire field-effect transistor

    SciTech Connect

    Heo, Y.W.; Tien, L.C.; Kwon, Y.; Norton, D.P.; Pearton, S.J.; Kang, B.S.; Ren, F.

    2004-09-20

    Single ZnO nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated using nanowires grown by site selective molecular-beam epitaxy. When measured in the dark at 25 deg. C, he depletion-mode transistors exhibit good saturation behavior, a threshold voltage of {approx}-3 V, and a maximum transconductance of order 0.3 mS/mm. Under ultraviolet (366 nm) illumination, the drain-source current increase by approximately a factor of 5 and the maximum transconductance is {approx}5 mS/mm. The channel mobility is estimated to be {approx}3 cm{sup 2}/V s, which is comparable to that reported for thin film ZnO enhancement mode MOSFETs, and the on/off ratio was {approx}25 in the dark and {approx}125 under UV illumination.

  9. Integration of ZnO and CuO nanowires into a thermoelectric module

    PubMed Central

    Dalola, Simone; Faglia, Guido; Comini, Elisabetta; Ferroni, Matteo; Soldano, Caterina; Ferrari, Vittorio; Sberveglieri, Giorgio

    2014-01-01

    Summary Zinc oxide (ZnO, n-type) and copper oxide (CuO, p-type) nanowires have been synthesized and preliminarily investigated as innovative materials for the fabrication of a proof-of-concept thermoelectric device. The Seebeck coefficients, electrical conductivity and thermoelectric power factors (TPF) of both semiconductor materials have been determined independently using a custom experimental set-up, leading to results in agreement with available literature with potential improvement. Combining bundles of ZnO and CuO nanowires in a series of five thermocouples on alumina leads to a macroscopic prototype of a planar thermoelectric generator (TEG) unit. This demonstrates the possibility of further integration of metal oxide nanostructures into efficient thermoelectric devices. PMID:24991531

  10. Role of ZnO thin film in the vertically aligned growth of ZnO nanorods by chemical bath deposition

    NASA Astrophysics Data System (ADS)

    Son, Nguyen Thanh; Noh, Jin-Seo; Park, Sungho

    2016-08-01

    The effect of ZnO thin film on the growth of ZnO nanorods was investigated. ZnO thin films were sputter-deposited on Si substrate with varying the thickness. ZnO nanorods were grown on the thin film using a chemical bath deposition (CBD) method at 90 °C. The ZnO thin films showed granular structure and vertical roughness on the surface, which facilitated the vertical growth of ZnO nanorods. The average grain size and the surface roughness of ZnO film increased with an increase in film thickness, and this led to the increase in both the average diameter and the average length of vertically grown ZnO nanorods. In particular, it was found that the average diameter of ZnO nanorods was very close to the average grain size of ZnO thin film, confirming the role of ZnO film as a seed layer for the vertical growth of ZnO nanorods. The CBD growth on ZnO seed layers may provide a facile route to engineering vertically aligned ZnO nanorod arrays.

  11. Direct alignment and patterning of silver nanowires by electrohydrodynamic jet printing.

    PubMed

    Lee, Hyungdong; Seong, Baekhoon; Kim, Jihoon; Jang, Yonghee; Byun, Doyoung

    2014-10-15

    Highly aligned and patterned silver nanowires (Ag NWs) are investigated by using electrohydrodynamic (EHD) jet printing. Interaction between the flow field and the electric field as well as the mechanical stretching of the fiber jet can successfully align the Ag NWs inside the jet fiber. This technique can be applied in fabricating 1D nanostructures-based printed micro/nanoscale devices.

  12. Transmission type flat-panel X-ray source using ZnO nanowire field emitters

    SciTech Connect

    Chen, Daokun; Song, Xiaomeng; Zhang, Zhipeng; Chen, Jun; Li, Ziping; She, Juncong; Deng, Shaozhi; Xu, Ningsheng

    2015-12-14

    A transmission type flat-panel X-ray source in diode structure was fabricated. Large-scale patterned ZnO nanowires grown on a glass substrate by thermal oxidation were utilized as field emitters, and tungsten thin film coated on silica glass was used as the transmission anode. Uniform distribution of X-ray generation was achieved, which benefited from the uniform electron emission from ZnO nanowires. Self-ballasting effect induced by the intrinsic resistance of ZnO nanowire and decreasing of screening effect caused by patterned emitters account for the uniform emission. Characteristic X-ray peaks of W-L lines and bremsstrahlung X-rays have been observed under anode voltages at a range of 18–20 kV, the latter of which were the dominant X-ray signals. High-resolution X-ray images with spatial resolution less than 25 μm were obtained by the flat-panel X-ray source. The high resolution was attributed to the small divergence angle of the emitted X-rays from the transmission X-ray source.

  13. Gallium ion implantation greatly reduces thermal conductivity and enhances electronic one of ZnO nanowires

    SciTech Connect

    Xia, Minggang; Cheng, Zhaofang; Han, Jinyun; Zhang, Shengli; Zheng, Minrui; Sow, Chorng-Haur; Thong, John T. L.; Li, Baowen

    2014-05-15

    The electrical and thermal conductivities are measured for individual zinc oxide (ZnO) nanowires with and without gallium ion (Ga{sup +}) implantation at room temperature. Our results show that Ga{sup +} implantation enhances electrical conductivity by one order of magnitude from 1.01 × 10{sup 3} Ω{sup −1}m{sup −1} to 1.46 × 10{sup 4} Ω{sup −1}m{sup −1} and reduces its thermal conductivity by one order of magnitude from 12.7 Wm{sup −1}K{sup −1} to 1.22 Wm{sup −1}K{sup −1} for ZnO nanowires of 100 nm in diameter. The measured thermal conductivities are in good agreement with those in theoretical simulation. The increase of electrical conductivity origins in electron donor doping by Ga{sup +} implantation and the decrease of thermal conductivity is due to the longitudinal and transverse acoustic phonons scattering by Ga{sup +} point scattering. For pristine ZnO nanowires, the thermal conductivity decreases only two times when its diameter reduces from 100 nm to 46 nm. Therefore, Ga{sup +}-implantation may be a more effective method than diameter reduction in improving thermoelectric performance.

  14. Hierarchically structured nanowires on and nanosticks in ZnO microtubes

    PubMed Central

    Rivaldo-Gómez, C. M.; Cabrera-Pasca, G. A.; Zúñiga, A.; Carbonari, A. W.; Souza, J. A.

    2015-01-01

    We report both coaxial core-shell structured microwires and ZnO microtubes with growth of nanosticks in the inner and nanowires on the outer surface as a novel hierarchical micro/nanoarchitecture. First, a core-shell structure is obtained—the core is formed by metallic Zn and the semiconducting shell is comprised by a thin oxide layer covered with a high density of nanowires. Such Zn/ZnO core-shell array showed magnetoresistance effect. It is suggested that magnetic moments in the nanostructured shell superimposes to the external magnetic field enhancing the MR effect. Second, microtubes decorated with nanowires on the external surface are obtained. In an intermediate stage, a hierarchical morphology comprised of discrete nanosticks in the inner surface of the microtube has been found. Hyperfine interaction measurements disclosed the presence of confined metallic Zn regions at the interface between linked ZnO grains forming a chain and a ZnO thicker layer. Surprisingly, the metallic clusters form highly textured thin flat regions oriented parallel to the surface of the microtube as revealed by the electrical field gradient direction. The driving force to grow the internal nanosticks has been ascribed to stress-induced migration of Zn ions due to compressive stress caused by the presence of these confined regions. PMID:26456527

  15. Solution-process coating of vertical ZnO nanowires with ferroelectrics.

    PubMed

    Kawasaki, Susumu; Fan, Hong Jin; Catalan, Gustau; Morrison, Finlay D; Tatsuta, Toshiaki; Tsuji, Osamu; Scott, James F

    2008-09-17

    We have developed a modified misted deposition process by combining substrate and mist heating for the deposition of ferroelectrics on 3D nanostructures. Arrays of vertical ZnO nanowires, sputter coated with Pd bottom electrodes, are used as the substrate. Scanning electron microscopy investigations show that conformal coating of ferroelectric Pb(Zr,Ti)O(3) (PZT) with good step coverage is obtained at deposition temperatures above 140 °C. The substrate heating also eliminates the common 'bundling' problem of the nanowire arrays. On the basis of data on x-ray diffraction, energy dispersive x-ray spectroscopy, and P-E hysteresis of PZT films on flat substrates, we obtain the optimum substrate temperature window to be 180-220 °C, in terms of best step coverage and an evident ferroelectricity. This is a significant step towards the end-goal of fully integrated ZnO nanowires with ferroelectric capacitors, which may be useful for the light-emitting applications of ZnO.

  16. Fabrication of ZnO Nanowires Arrays by Anodization and High-Vacuum Die Casting Technique, and Their Piezoelectric Properties.

    PubMed

    Kuo, Chin-Guo; Chang, Ho; Wang, Jian-Hao

    2016-03-24

    In this investigation, anodic aluminum oxide (AAO) with arrayed and regularly arranged nanopores is used as a template in the high-vacuum die casting of molten zinc metal (Zn) into the nanopores. The proposed technique yields arrayed Zn nanowires with an aspect ratio of over 600. After annealing, arrayed zinc oxide (ZnO) nanowires are obtained. Varying the anodizing time yields AAO templates with thicknesses of approximately 50 μm, 60 μm, and 70 μm that can be used in the fabrication of nanowires of three lengths with high aspect ratios. Experimental results reveal that a longer nanowire generates a greater measured piezoelectric current. The ZnO nanowires that are fabricated using an alumina template are anodized for 7 h and produce higher piezoelectric current of up to 69 pA.

  17. Fabrication of ZnO Nanowires Arrays by Anodization and High-Vacuum Die Casting Technique, and Their Piezoelectric Properties

    PubMed Central

    Kuo, Chin-Guo; Chang, Ho; Wang, Jian-Hao

    2016-01-01

    In this investigation, anodic aluminum oxide (AAO) with arrayed and regularly arranged nanopores is used as a template in the high-vacuum die casting of molten zinc metal (Zn) into the nanopores. The proposed technique yields arrayed Zn nanowires with an aspect ratio of over 600. After annealing, arrayed zinc oxide (ZnO) nanowires are obtained. Varying the anodizing time yields AAO templates with thicknesses of approximately 50 μm, 60 μm, and 70 μm that can be used in the fabrication of nanowires of three lengths with high aspect ratios. Experimental results reveal that a longer nanowire generates a greater measured piezoelectric current. The ZnO nanowires that are fabricated using an alumina template are anodized for 7 h and produce higher piezoelectric current of up to 69 pA. PMID:27023546

  18. Growth of ZnO nanowires on polypropylene membrane surface-Characterization and reactivity

    NASA Astrophysics Data System (ADS)

    Bojarska, Marta; Nowak, Bartosz; Skowroński, Jarosław; Piątkiewicz, Wojciech; Gradoń, Leon

    2017-01-01

    Need for a new membrane is clearly visible in recent studies, mostly due to the fouling phenomenon. Authors, focused on problem of biofouling caused by microorganisms that are present in water environment. An attempt to form a new membrane with zinc oxide (ZnO) nanowires was made; where plasma treatment was used as a first step of modification followed by chemical bath deposition. Such membrane will exhibit additional reactive properties. ZnO, because of its antibacterial and photocatalytic properties, is more and more often used in commercial applications. The authors used SEM imaging, measurement of the contact angle, XRD and the FT-IR analysis for membrane characterization. Amount of ZnO deposited on membrane surface was also investigated by dithizone method. Photocatalytic properties of such membranes were examined through methylene blue and humic acid degradation in laboratory scale modules with LEDs as either: wide range white or UV light source. Antibacterial and antifouling properties of polypropylene membranes modified with ZnO nanowires were examined through a series of tests involving microorganisms: model gram-positive and -negative bacteria. The obtained results showed that it is possible to modify the membrane surface in such a way, that additional reactive properties will be given. Thus, not only did the membrane become a physical barrier, but also turned out to be a reactive one.

  19. Pressure-Induced Structural Transformations of ZnO Nanowires Probed by X-ray Diffraction

    SciTech Connect

    Dong, Zhaohui; Zhuravlev, Kirill K.; Morin, Stephen A.; Li, Linsen; Jin, Song; Song, Yang

    2016-01-11

    ZnO nanowires were investigated at high pressures of up to 27 GPa in situ in a diamond anvil cell using synchrotron X-ray diffraction. Upon compression, a wurtzite-to-rocksalt phase transformation was observed, but both the onset and the completion pressures of this transformation were enhanced compared with all previously studied morphologies of ZnO, including nanocrystals and their bulk counterparts. Upon decompression, the rocksalt phase was found to sustain at near ambient pressure and could be recovered in a significant amount. Moreover, the pressure-volume equations of state for both the wurtzite and the rocksalt phases indicate that their bulk moduli are significantly higher than those of bulk ZnO and nanocrystals. The SEM images of the ZnO nanowires both before and after the compression suggest the pressure-induced morphology modifications, corroborating the understanding of other structure and property evolutions with pressure. Finally, possible pressure-induced phase transition mechanisms were explored by examining the cell parameters and the internal structural parameter with pressures.

  20. Improving Morphological Quality and Uniformity of Hydrothermally Grown ZnO Nanowires by Surface Activation of Catalyst Layer

    NASA Astrophysics Data System (ADS)

    Murillo, Gonzalo; Lozano, Helena; Cases-Utrera, Joana; Lee, Minbaek; Esteve, Jaume

    2017-01-01

    This paper presents a study about the dependence of the hydrothermal growth of ZnO nanowires (NWs) with the passivation level of the active surface of the Au catalyst layer. The hydrothermal method has many potential applications because of its low processing temperature, feasibility, and low cost. However, when a gold thin film is utilized as the seed material, the grown NWs often lack morphological homogeneity; their distribution is not uniform and the reproducibility of the growth is low. We hypothesize that the state or condition of the active surface of the Au catalyst layer has a critical effect on the uniformity of the NWs. Inspired by traditional electrochemistry experiments, in which Au electrodes are typically activated before the measurements, we demonstrate that such activation is a simple way to effectively assist and enhance NW growth. In addition, several cleaning processes are examined to find one that yields NWs with optimal quality, density, and vertical alignment. We find cyclic voltammetry measurements to be a reliable indicator of the seed-layer quality for subsequent NW growth. Therefore, we propose the use of this technique as a standard procedure prior to the hydrothermal synthesis of ZnO NWs to control the growth reproducibility and to allow high-yield wafer-level processing.

  1. Developing Seedless Growth of ZnO Micro/Nanowire Arrays towards ZnO/FeS2/CuI P-I-N Photodiode Application

    PubMed Central

    Yang, Zhi; Wang, Minqiang; Shukla, Sudhanshu; Zhu, Yue; Deng, Jianping; Ge, Hu; Wang, Xingzhi; Xiong, Qihua

    2015-01-01

    A seedless hydrothermal method is developed to grow high density and vertically aligned ZnO micro/nanowire arrays with low defect density on metal films under the saturated nutrition solution. In particular, the mechanism of seedless method is discussed here. A buffer layer can be confirmed by transmission electron microscopy (TEM), which may release the elastic strain between ZnO and substrate to achieve this highly mismatched heteroepitaxial structures. Based on ZnO micro/nanowire arrays with excellent wettability surface, we prepared ZnO-FeS2-CuI p-i-n photodiode by all-solution processed method with the high rectifying ratio of 197 at ±1 V. Under AM 1.5 condition, the Jsc of 0.5 mA/cm2, on-off current ratio of 371 and fast photoresponse at zero bias voltage were obtained. This good performance comes from excellent collection ability of photogenerated electrons and holes due to the increased depletion layer width for p-i-n structure. Finally, the high responsivity around 900 nm shows the potential as near infrared photodetectors applications. PMID:26077658

  2. ZnO nanowire and mesowire for logic inverter fabrication

    NASA Astrophysics Data System (ADS)

    Lee, Young Tack; Im, Seongil; Ha, Ryong; Choi, Heon-Jin

    2010-09-01

    We report on a ZnO-based logic inverter utilizing two field effect transistors (FETs), whose respective channel has different wire-diameters under a top-gate dielectric of poly-4-vinylphenol. One FET with nanowire (160 nm) channel displayed an abrupt drain current (ID) increase and fast ID saturation near its positive threshold voltage (Vth) while the other FET with mesowire (770 nm) showed a thin-film transistor-like behavior and a negative Vth. When the nanowire and mesowire FETs were, respectively, used as a driver and a load, our inverter demonstrated an excellent voltage gain as high as 25 under a supply voltage of 20 V.

  3. Strong Enhancement of Near-Band-Edge Photoluminescence of ZnO Nanowires Decorated with Sputtered Metallic Nanoparticles

    NASA Astrophysics Data System (ADS)

    Purahmad, Mohsen; Stroscio, Michael A.; Dutta, Mitra

    2013-12-01

    The effect of the Ar plasma during metal deposition on the photoluminescence (PL) of metal-coated ZnO nanowires (NWs) has been investigated. Strong enhancement of near-band-edge emission (NBE) is observed for ZnO NWs coated with Al and Ni nanoparticles (NPs) by radiofrequency magnetron sputtering, while the samples coated with NPs by e-beam evaporation show quenching of the PL intensity. A model is proposed that satisfies the observed experimental results and assigns the strong enhancement of the NBE PL of ZnO NWs to excitons bound to structural defects in the surface layer of the ZnO NWs.

  4. Improving nanowire sensing capability by electrical field alignment of surface probing molecules.

    PubMed

    Chu, Chia-Jung; Yeh, Chia-Sen; Liao, Chun-Kai; Tsai, Li-Chu; Huang, Chun-Ming; Lin, Hung-Yi; Shyue, Jing-Jong; Chen, Yit-Tsong; Chen, Chii-Dong

    2013-06-12

    We argue that the structure ordering of self-assembled probing molecular monolayers is essential for the reliability and sensitivity of nanowire-based field-effect sensors because it can promote the efficiency for molecular interactions as well as strengthen the molecular dipole field experienced by the nanowires. In the case of monolayers, we showed that structure ordering could be improved by means of electrical field alignment. This technique was then employed to align multilayer complexes for nanowire sensing applications. The sensitivity we achieved for detection of hybridization between 15-base single-strand DNA molecules is 0.1 fM and for alcohol sensors is 0.5 ppm. The reliability was confirmed by repeated tests on chips that contain multiple nanowire sensors.

  5. Controlled growth of well-aligned ZnO nanorod arrays by hydrothermal method

    NASA Astrophysics Data System (ADS)

    Mihailova, I.; Gerbreders, V.; Bulanovs, A.; Tamanis, E.; Sledevskis, E.; Ogurcovs, A.; Sarajevs, P.

    2014-10-01

    The application prospect of zinc oxide (ZnO) nanostructures largely relies on the ability to grow nanoobjects with necessary geometry. In this study well-aligned ZnO nanorod arrays with a high density and uniformity were successfully synthesized on the glass substrates by a hydrothermal method at low-temperature. The aqueous solutions of zinc nitrate hexahydrate and hexamethylenetetramine was used. The effect of seed layer (obtained by electrochemical method and by vacuum deposition method) on the alignment of ZnO nanorods has been investigated. The morphological properties of the ZnO nanorods were also examined in accordance with varying the magnetron sputtering angle for ZnO seeds deposition. It is also shown that the electric field can control the direction of the growth of ZnO nanorods. Morphological, structural and compositional characterizations of obtained films were carried out by scanning electron microscopy, energy-dispersive X-ray spectroscopy and X-ray diffraction analysis methods.

  6. Growth of well-aligned ZnO nanorods using auge catalyst by vapor phase transportation.

    PubMed

    Ha, S Y; Jung, M N; Park, S H; Ko, H J; Ko, H; Oh, D C; Yao, T; Chang, J H

    2006-11-01

    Well-aligned ZnO nanorods have been achieved using new alloy (AuGe) catalyst. Zn powder was used as a source material and it was transported in a horizontal tube furnace onto an AuGe deposited Si substrates. The structural and optical properties of ZnO nanorods were characterized by scanning electron microscopy, high resolution X-ray diffraction, and photoluminescence. ZnO nanorods grown at 650 degrees C on 53 nm thick AuGe layer show uniform shape with the length of 8 +/- 0.5 microm and the diameter of 150 +/- 5 nm. Also, the tilting angle of ZnO nanorods (+/- 5.5 degrees) is confirmed by HRXRD. High structural quality of the nanorods is conformed by the photoluminescence measurement. All samples show strong UV emission without considerable deep level emission. However, weak deep level emission appears at high (700 degrees C) temperature due to the increase of oxygen desertion.

  7. Electrochemical synthesis of vertically aligned zinc nanowires using track-etched polycarbonate membranes as templates.

    PubMed

    Liu, Z; Zein El Abedin, S; Ghazvini, M S; Endres, F

    2013-07-21

    In the present paper, vertically aligned arrays of zinc nanowires were synthesized by electrochemical deposition into ion track-etched polycarbonate membranes in the ionic liquid electrolyte 1-ethyl-3-methylimidazolium trifluoromethylsulfonate ([EMIm]TfO)/Zn(TfO)2. Cyclic voltammetry and chronoamperometry were performed to investigate the electrochemical growth of zinc nanowires inside of the membranes. The transport processes and mechanisms of the nanowire growth in the membranes are also discussed. A supporting zinc or copper layer was deposited on the sputtered side in order to make the back layer thick enough to stabilize the wires. Zinc nanowires with a diameter of 90 nm and a length of up to 18 μm were obtained after removing the template. Furthermore, short nanowires with lengths less than 5 μm and a sandwich-like structure with nanowires in the middle were also synthesized. Vertically aligned zinc nanowire structures on such a substrate might be a potential anode candidate for future generation lithium ion batteries.

  8. Exploring the Potential of Turbulent Flow Control Using Vertically Aligned Nanowire Arrays

    NASA Astrophysics Data System (ADS)

    Bailey, Sean; Calhoun, John; Guskey, Christopher; Seigler, Michael; Koka, Aneesh; Sodano, Henry

    2012-11-01

    We present evidence that turbulent flow can be influenced by oscillating nanowires. A substrate coated with vertically aligned nanowires was installed in the boundary wall of fully-developed turbulent channel flow, and the substrate was excited by a piezoceramic actuator to oscillate the nanowires. Because the nanowires are immersed in the viscous sublayer, it was previously unclear whether the small scale flow oscillations imparted into the bulk flow by the nanowires would influence the turbulent flow or be dissipated by the effects of viscosity. Our experiments demonstrated that the nanowires produced perturbations in the flow and contributed energy throughout the depth of the turbulent layer. A parallel investigation using a dynamically scaled surface of vertically aligned wires in laminar flow found that, even at low Reynolds numbers, significant momentum transport can be produced in the flow by the introduction of a travelling wave motion into the surface. These findings reflect the potential for using oscillating nanowires as a novel method of near-wall turbulent flow control. This work was supported by the Air Force Office of Scientific Research under FA9550-11-1-0140.

  9. ZnO Nanowires Synthesized by Vapor Phase Transport Deposition on Transparent Oxide Substrates

    PubMed Central

    2010-01-01

    Zinc oxide nanowires have been synthesized without using metal catalyst seed layers on fluorine-doped tin oxide (FTO) substrates by a modified vapor phase transport deposition process using a double-tube reactor. The unique reactor configuration creates a Zn-rich vapor environment that facilitates formation and growth of zinc oxide nanoparticles and wires (20–80 nm in diameter, up to 6 μm in length, density <40 nm apart) at substrate temperatures down to 300°C. Electron microscopy and other characterization techniques show nanowires with distinct morphologies when grown under different conditions. The effect of reaction parameters including reaction time, temperature, and carrier gas flow rate on the size, morphology, crystalline structure, and density of ZnO nanowires has been investigated. The nanowires grown by this method have a diameter, length, and density appropriate for use in fabricating hybrid polymer/metal oxide nanostructure solar cells. For example, it is preferable to have nanowires no more than 40 nm apart to minimize exciton recombination in polymer solar cells. PMID:20676196

  10. Electro-physical characterization of individual and arrays of ZnO nanowires

    SciTech Connect

    Mallampati, Bhargav; Singh, Abhay; Philipose, U.; Shik, Alex; Ruda, Harry E.

    2015-07-21

    Capacitance measurements were made on an array of parallel ZnO nanowires embedded in a polymer matrix and provided with two electrodes perpendicular to the nanowires. The capacitance monotonically increased, and saturated at large negative (depleting) and large positive (accumulating) voltages. A qualitative explanation for this behavior is presented, taking into account specific features of quasi-one-dimensional screening. The increasing or decreasing character of the capacitance-voltage characteristics were determined by the conductivity type of the nanowires, which in our case was n-type. A dispersion of the experimental capacitance was observed over the entire frequency range of 1 kHz to 5 MHz. This phenomenon is explained by the slow discharge of the nanowires through the thin dielectric layer that separates them from the top electrode. Separate measurements on individual identical nanowires in a field effect transistor configuration yielded an electron concentration and mobility of approximately 10{sup 17 }cm{sup −3} and 150 cm{sup 2}/Vs, respectively, at room temperature.

  11. Photocarrier Transport and Carrier Recombination Efficiency in Vertically Aligned Si Nanowire Arrays Synthesized Via Metal-Assisted Chemical Etching

    NASA Astrophysics Data System (ADS)

    Muldera, Joselito; Cabello, Neil Irvin; Ragasa, Joseph Christopher; Mabilangan, Arvin; Herminia Balgos, Ma.; Jaculbia, Rafael; Somintac, Armando; Estacio, Elmer; Salvador, Arnel

    2013-08-01

    The carrier dynamics and recombination characteristics of vertically aligned silicon nanowires are investigated using terahertz emission and photoluminescence spectroscopy, respectively. It is observed that the presence of pores on the walls in two-step-synthesized silicon nanowires greatly affects the carrier dynamics, compared with nanowires synthesized using a one-step process. These pores become efficient carrier recombination sites wherein carriers are collected upon photoexcitation. Additionally, pores effectively diminish the surface electric field thereby inhibiting the terahertz emission. Finally, nanowire-length-dependent terahertz emission is observed only for the one-step-synthesized nanowires whereas the two-step-synthesized nanowire samples exhibited length dependence of their photoluminescence intensity.

  12. A fast and effective approach for reversible wetting-dewetting transitions on ZnO nanowires

    PubMed Central

    Yadav, Kavita; Mehta, B. R.; Bhattacharya, Saswata; Singh, J. P.

    2016-01-01

    Here, we demonstrate a facile approach for the preparation of ZnO nanowires (NWs) with tunable surface wettability that can be manipulated reversibly in a controlled manner from a superhydrophilic state to a superhydrophobic state. The as-synthesized ZnO NWs obtained by a chemical vapor deposition method are superhydrophilic with a contact angle (CA) value of ~0°. After H2 gas annealing at 300 °C for 90 minutes, ZnO NWs display superhydrophobic behavior with a roll-off angle less than 5°. However, O2 gas annealing converts these superhydrophobic ZnO NWs into a superhydrophilic state. For switching from superhydrophobic to superhydrophilic state and vice versa in cyclic manner, H2 and O2 gas annealing treatment was used, respectively. A model based on density functional theory indicates that the oxygen-related defects are responsible for CA switching. The water resistant properties of the ZnO NWs coating is found to be durable and can be applied to a variety of substrates including glass, metals, semiconductors, paper and even flexible polymers. PMID:27713536

  13. A fast and effective approach for reversible wetting-dewetting transitions on ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Yadav, Kavita; Mehta, B. R.; Bhattacharya, Saswata; Singh, J. P.

    2016-10-01

    Here, we demonstrate a facile approach for the preparation of ZnO nanowires (NWs) with tunable surface wettability that can be manipulated reversibly in a controlled manner from a superhydrophilic state to a superhydrophobic state. The as-synthesized ZnO NWs obtained by a chemical vapor deposition method are superhydrophilic with a contact angle (CA) value of ~0°. After H2 gas annealing at 300 °C for 90 minutes, ZnO NWs display superhydrophobic behavior with a roll-off angle less than 5°. However, O2 gas annealing converts these superhydrophobic ZnO NWs into a superhydrophilic state. For switching from superhydrophobic to superhydrophilic state and vice versa in cyclic manner, H2 and O2 gas annealing treatment was used, respectively. A model based on density functional theory indicates that the oxygen-related defects are responsible for CA switching. The water resistant properties of the ZnO NWs coating is found to be durable and can be applied to a variety of substrates including glass, metals, semiconductors, paper and even flexible polymers.

  14. Crystallographic alignment of high-density gallium nitride nanowire arrays.

    PubMed

    Kuykendall, Tevye; Pauzauskie, Peter J; Zhang, Yanfeng; Goldberger, Joshua; Sirbuly, Donald; Denlinger, Jonathan; Yang, Peidong

    2004-08-01

    Single-crystalline, one-dimensional semiconductor nanostructures are considered to be one of the critical building blocks for nanoscale optoelectronics. Elucidation of the vapour-liquid-solid growth mechanism has already enabled precise control over nanowire position and size, yet to date, no reports have demonstrated the ability to choose from different crystallographic growth directions of a nanowire array. Control over the nanowire growth direction is extremely desirable, in that anisotropic parameters such as thermal and electrical conductivity, index of refraction, piezoelectric polarization, and bandgap may be used to tune the physical properties of nanowires made from a given material. Here we demonstrate the use of metal-organic chemical vapour deposition (MOCVD) and appropriate substrate selection to control the crystallographic growth directions of high-density arrays of gallium nitride nanowires with distinct geometric and physical properties. Epitaxial growth of wurtzite gallium nitride on (100) gamma-LiAlO(2) and (111) MgO single-crystal substrates resulted in the selective growth of nanowires in the orthogonal [1\\[Evec]0] and [001] directions, exhibiting triangular and hexagonal cross-sections and drastically different optical emission. The MOCVD process is entirely compatible with the current GaN thin-film technology, which would lead to easy scale-up and device integration.

  15. Low-Frequency Self-Powered Footstep Sensor Based on ZnO Nanowires on Paper Substrate

    NASA Astrophysics Data System (ADS)

    Nour, E. S.; Bondarevs, A.; Huss, P.; Sandberg, M.; Gong, S.; Willander, M.; Nur, O.

    2016-03-01

    In this work, we design and fabricate a wireless system with the main operating device based on zinc oxide (ZnO) nanowires. The main operating device is based on piezoelectric nanogenerator (NG) achieved using ZnO nanowires grown hydrothermally on paper substrate. The fabricated NG is capable of harvesting ambient mechanical energy from various kinds of human motion, e.g., footsteps. The harvested electric output has been used to serve as a self-powered pressure sensor. Without any storage device, the signal from a single footstep has successfully triggered a wireless sensor node circuit. This study demonstrates the feasibility of using ZnO nanowire piezoelectric NG as a low-frequency self-powered sensor, with potential applications in wireless sensor networks.

  16. Vertically Aligned ZnO Nanorods: Effect of Synthesis Parameters.

    PubMed

    Rehman, Zeeshan Ur; Heo, Si-Nae; Cho, Hyeon Ji; Koo, Bon Heun

    2016-06-01

    This report is devoted to the synthesis of high quality nanorods using spin coating technique for seed layer growth. Effect of different parameter i.e., spins coating counts, spin coating speed, and the effect of temperature during the drying process was analyzed. Hot plate and furnace technique was used for heating purpose and the difference in the morphology was carefully observed. It is worthy to mention here that there is a substantial effect of all the above mentioned parameters on the growth and morphology of the ZnO nanostructure. The ZnO nanorods were finally synthesized using wet chemical method. The morphological properties of the obtained nanostructures were analyzed by using FESEM technique.

  17. A metal-semiconductor-metal detector based on ZnO nanowires grown on a graphene layer

    NASA Astrophysics Data System (ADS)

    Xu, Qiang; Cheng, Qijin; Zhong, Jinxiang; Cai, Weiwei; Zhang, Zifeng; Wu, Zhengyun; Zhang, Fengyan

    2014-02-01

    High quality ZnO nanowires (NWs) were grown on a graphene layer by a hydrothermal method. The ZnO NWs revealed higher uniform surface morphology and better structural properties than ZnO NWs grown on SiO2/Si substrate. A low dark current metal-semiconductor-metal photodetector based on ZnO NWs with Au Schottky contact has also been fabricated. The photodetector displays a low dark current of 1.53 nA at 1 V bias and a large UV-to-visible rejection ratio (up to four orders), which are significantly improved compared to conventional ZnO NW photodetectors. The improvement in UV detection performance is attributed to the existence of a surface plasmon at the interface of the ZnO and the graphene.

  18. A metal-semiconductor-metal detector based on ZnO nanowires grown on a graphene layer.

    PubMed

    Xu, Qiang; Cheng, Qijin; Zhong, Jinxiang; Cai, Weiwei; Zhang, Zifeng; Wu, Zhengyun; Zhang, Fengyan

    2014-02-07

    High quality ZnO nanowires (NWs) were grown on a graphene layer by a hydrothermal method. The ZnO NWs revealed higher uniform surface morphology and better structural properties than ZnO NWs grown on SiO2/Si substrate. A low dark current metal-semiconductor-metal photodetector based on ZnO NWs with Au Schottky contact has also been fabricated. The photodetector displays a low dark current of 1.53 nA at 1 V bias and a large UV-to-visible rejection ratio (up to four orders), which are significantly improved compared to conventional ZnO NW photodetectors. The improvement in UV detection performance is attributed to the existence of a surface plasmon at the interface of the ZnO and the graphene.

  19. Morphology-controlled ZnO nanowire arrays for tailored hybrid composites with high damping.

    PubMed

    Malakooti, Mohammad H; Hwang, Hyun-Sik; Sodano, Henry A

    2015-01-14

    Hybrid fiber reinforced composites using a nanoscale reinforcement of the interface have not reached their optimal performance in practical applications due to their complex design and the challenging assembly of their multiscale components. One promising approach to the fabrication of hybrid composites is the growth of zinc oxide (ZnO) nanowire arrays on the surface of carbon fibers to provide improved interfacial strength and out of plane reinforcement. However, this approach has been demonstrated mainly on fibers and thus still requires complex processing conditions. Here we demonstrate a simple approach to the fabrication of such composites through the growth of the nanowires on the fabric. The fabricated composites with nanostructured graded interphase not only exhibit remarkable damping enhancement but also stiffness improvement. It is demonstrated that these two extremely important properties of the composite can be controlled by tuning the morphology of the ZnO nanowires at the interface. Higher damping and flexural rigidity of these composites over traditional ones offer practical high-performance composites.

  20. Characterization and modeling of a ZnO nanowire ultraviolet photodetector with graphene transparent contact

    SciTech Connect

    Zhang, H.; Lavenus, P.; Julien, F. H.; Tchernycheva, M.; Babichev, A. V.; Jacopin, G.; Egorov, A. Yu.

    2013-12-21

    We report the demonstration of a ZnO nanowire ultraviolet photodetector with a top transparent electrode made of a few-layered graphene sheet. The nanowires have been synthesized using a low-cost electrodeposition method. The detector is shown to be visible-blind and to present a responsivity larger than 10{sup 4} A/W in the near ultraviolet range thanks to a high photoconductive gain in ZnO nanowires. The device exhibits a peak responsivity at 370 nm wavelength and shows a sub bandgap response down to 415 nm explained by an Urbach tail with a characteristic energy of 83 meV. The temporal response of the detector and the power dependence are discussed. A model of the photoconductive mechanism is proposed showing that the main process responsible for the photoconductive gain is the modulation of the conducting surface due to the variation of the surface depletion layer and not the reduction of recombination efficiency stemming from the electron-hole spatial separation. The gain is predicted to decrease at high incident power due to the flattening of the lateral band bending in agreement with experimental data.

  1. XPS investigation of titanium contact formation to ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Barnett, Chris J.; Castaing, Ambroise; Jones, Daniel R.; Lewis, Aled R.; Jenkins, Lewys J.; Cobley, Richard J.; Maffeis, Thierry G. G.

    2017-02-01

    Ti is often used to form an initial Ohmic interface between ZnO and Au due to its low work function, and the TiO2/ZnO heterojunction is also of great importance for many practical applications of nanoparticles. Here, Ti has been controllably deposited onto hydrothermally grown ZnO nanowires and the formation of metal-semiconductor contact has been investigated using x-ray photoelectron spectroscopy (XPS), photoluminescence (PL) spectroscopy and scanning electron microscopy. XPS results showed that that the Ti initially reacts with surface oxygen species to form TiO2, and further deposition results in the formation of oxides with oxidation state numbers lower than four, and eventually metallic Ti on top of the TiO2. The formation of TiC was also observed. XPS showed that the onset of metallic Ti coincided with a Zn 3p core level shift to lower binding energy, indicating upwards band bending and the formation of a rectifying contact. Annealing caused a near-complete conversion of the metallic Ti to TiO2 and caused the Zn 3p to shift back to its original higher binding energy, resulting in downwards band bending and a more Ohmic contact. PL measurements showed that the optical properties of the nanowires are not affected by the contact formation.

  2. Photoinduced oxygen release and persistent photoconductivity in ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Bao, Jiming; Shalish, Ilan; Su, Zhihua; Gurwitz, Ron; Capasso, Federico; Wang, Xiaowei; Ren, Zhifeng

    2011-05-01

    Photoconductivity is studied in individual ZnO nanowires. Under ultraviolet (UV) illumination, the induced photocurrents are observed to persist both in air and in vacuum. Their dependence on UV intensity in air is explained by means of photoinduced surface depletion depth decrease caused by oxygen desorption induced by photogenerated holes. The observed photoresponse is much greater in vacuum and proceeds beyond the air photoresponse at a much slower rate of increase. After reaching a maximum, it typically persists indefinitely, as long as good vacuum is maintained. Once vacuum is broken and air is let in, the photocurrent quickly decays down to the typical air-photoresponse values. The extra photoconductivity in vacuum is explained by desorption of adsorbed surface oxygen which is readily pumped out, followed by a further slower desorption of lattice oxygen, resulting in a Zn-rich surface of increased conductivity. The adsorption-desorption balance is fully recovered after the ZnO surface is exposed to air, which suggests that under UV illumination, the ZnO surface is actively "breathing" oxygen, a process that is further enhanced in nanowires by their high surface to volume ratio.

  3. XPS investigation of titanium contact formation to ZnO nanowires.

    PubMed

    Barnett, Chris J; Castaing, Ambroise; Jones, Daniel R; Lewis, Aled R; Jenkins, Lewys J; Cobley, Richard J; Maffeis, Thierry G G

    2017-02-24

    Ti is often used to form an initial Ohmic interface between ZnO and Au due to its low work function, and the TiO2/ZnO heterojunction is also of great importance for many practical applications of nanoparticles. Here, Ti has been controllably deposited onto hydrothermally grown ZnO nanowires and the formation of metal-semiconductor contact has been investigated using x-ray photoelectron spectroscopy (XPS), photoluminescence (PL) spectroscopy and scanning electron microscopy. XPS results showed that that the Ti initially reacts with surface oxygen species to form TiO2, and further deposition results in the formation of oxides with oxidation state numbers lower than four, and eventually metallic Ti on top of the TiO2. The formation of TiC was also observed. XPS showed that the onset of metallic Ti coincided with a Zn 3p core level shift to lower binding energy, indicating upwards band bending and the formation of a rectifying contact. Annealing caused a near-complete conversion of the metallic Ti to TiO2 and caused the Zn 3p to shift back to its original higher binding energy, resulting in downwards band bending and a more Ohmic contact. PL measurements showed that the optical properties of the nanowires are not affected by the contact formation.

  4. Polymer chain alignment and transistor properties of nanochannel-templated poly(3-hexylthiophene) nanowires

    NASA Astrophysics Data System (ADS)

    Oh, Seungjun; Hayakawa, Ryoma; Pan, Chengjun; Sugiyasu, Kazunori; Wakayama, Yutaka

    2016-08-01

    Nanowires of semiconducting poly(3-hexylthiophene) (P3HT) were produced by a nanochannel-template technique. Polymer chain alignment in P3HT nanowires was investigated as a function of nanochannel widths (W) and polymer chain lengths (L). We found that the ratio between chain length and channel width (L/W) was a key parameter as regards promoting polymer chain alignment. Clear dichroism was observed in polarized ultraviolet-visible (UV-Vis) absorption spectra only at a ratio of approximately L/W = 2, indicating that the L/W ratio must be optimized to achieve uniaxial chain alignment in the nanochannel direction. We speculate that an appropriate L/W ratio is effective in confining the geometries and conformations of polymer chains. This discussion was supported by theoretical simulations based on molecular dynamics. That is, the geometry of the polymer chains, including the distance and tilting angles of the chains in relation to the nanochannel surface, was dominant in determining the longitudinal alignment along the nanochannels. Thus prepared highly aligned polymer nanowire is advantageous for electrical carrier transport and has great potential for improving the device performance of field-effect transistors. In fact, a one-order improvement in carrier mobility was observed in a P3HT nanowire transistor.

  5. Hybrid ZnO nanowire/a-Si:H thin-film radial junction solar cells using nanoparticle front contacts

    SciTech Connect

    Pathirane, M. Iheanacho, B.; Lee, C.-H.; Wong, W. S.; Tamang, A.; Knipp, D.; Lujan, R.

    2015-10-05

    Hydrothermally synthesized disordered ZnO nanowires were conformally coated with a-Si:H thin-films to fabricate three dimensional hybrid nanowire/thin-film structures. The a-Si:H layer formed a radial junction p-i-n diode solar cell around the ZnO nanowire. The cylindrical hybrid solar cells enhanced light scattering throughout the UV-visible-NIR spectrum (300 nm–800 nm) resulting in a 22% increase in short-circuit current density compared to the reference planar p-i-n device. A fill factor of 69% and a total power conversion efficiency of 6.5% were achieved with the hybrid nanowire solar cells using a spin-on indium tin oxide nanoparticle suspension as the top contact.

  6. Tunable transport properties of n-type ZnO nanowires by Ti plasma immersion ion implantation

    SciTech Connect

    Liao, L.; Zhang, Z.; Yan, B.; Li, G. P.; Wu, T.; Shen, Z. X.; Yu, T.; Yang, Y.; Cao, H. T.; Chen, L. L.; Tay, B. K.; Sun, X. W.

    2008-10-01

    Single-crystalline, transparent conducting ZnO nanowires were obtained simply by Ti plasma immersion ion implantation (PIII). Electrical transport characterizations demonstrate that the n-type conduction of ZnO nanowire could be tuned by appropriate Ti-PIII. When the energy of PIII is increased, the resistivity of ZnO decreases from 4x10{sup 2} to 3.3x10{sup -3} {omega} cm, indicating a semiconductor-metal transition. The failure-current densities of the metallic ZnO could be up to 2.75x10{sup 7} A/cm{sup 2}. Therefore, this facile method may provide an inexpensive alternative to tin doped indium oxide as transparent conducting oxide materials.

  7. Polar surface effects on the thermal conductivity of ZnO nanowires: a shell-like surface reconstruction-induced preserving mechanism.

    PubMed

    Jiang, Jin-Wu; Park, Harold S; Rabczuk, Timon

    2013-11-21

    We perform molecular dynamics (MD) simulations to investigate the effect of polar surfaces on the thermal transport in zinc oxide (ZnO) nanowires. We find that the thermal conductivity of nanowires with free polar (0001) surfaces is much higher than that of nanowires that have been stabilized with reduced charges on the polar (0001) surfaces, and also hexagonal nanowires without any transverse polar surface, where the reduced charge model has been proposed as a promising stabilization mechanism for the (0001) polar surfaces of ZnO nanowires. From normal mode analysis, we show that the higher thermal conductivity is due to the shell-like reconstruction that occurs for the free polar surfaces. This shell-like reconstruction suppresses twisting motion in the nanowires such that the bending phonon modes are not scattered by the other phonon modes, and this leads to substantially higher thermal conductivity of the ZnO nanowires with free polar surfaces. Furthermore, the auto-correlation function of the normal mode coordinate is utilized to extract the phonon lifetime, which leads to a concise explanation for the higher thermal conductivity of ZnO nanowires with free polar surfaces. Our work demonstrates that ZnO nanowires without polar surfaces, which exhibit low thermal conductivity, are more promising candidates for thermoelectric applications than nanowires with polar surfaces (and also high thermal conductivity).

  8. An advanced fabrication method of highly ordered ZnO nanowire arrays on silicon substrates by atomic layer deposition.

    PubMed

    Subannajui, Kittitat; Güder, Firat; Danhof, Julia; Menzel, Andreas; Yang, Yang; Kirste, Lutz; Wang, Chunyu; Cimalla, Volker; Schwarz, Ulrich; Zacharias, Margit

    2012-06-15

    In this work, the controlled fabrication of highly ordered ZnO nanowire (NW) arrays on silicon substrates is reported. Si NWs fabricated by a combination of phase shift lithography and etching are used as a template and are subsequently substituted by ZnO NWs with a dry-etching technique and atomic layer deposition. This fabrication technique allows the vertical ZnO NWs to be fabricated on 4 in Si wafers. Room temperature photoluminescence and micro-photoluminescence are used to observe the optical properties of the atomic layer deposition (ALD) based ZnO NWs. The sharp UV luminescence observed from the ALD ZnO NWs is unexpected for the polycrystalline nanostructure. Surprisingly, the defect related luminescence is much decreased compared to an ALD ZnO film deposited at the same time ona plane substrate. Electrical characterization was carried out by using nanomanipulators. With the p-type Si substrate and the n-type ZnO NWs the nanodevices represent p–n NW diodes.The nanowire diodes show a very high breakthrough potential which implies that the ALD ZnO NWs can be used for future electronic applications.

  9. Doping of ZnO nanowires using phosphorus diffusion from a spin-on doped glass source

    SciTech Connect

    Bocheux, A.; Robin, I. C.; Bonaimé, J.; Hyot, B.; Feuillet, G.; Kolobov, A. V.; Fons, P.; Mitrofanov, K. V.; Tominaga, J.; Tamenori, Y.

    2014-05-21

    In this article, we report on ZnO nanowires that were phosphorus doped using a spin on dopant glass deposition and diffusion method. Photoluminescence measurements suggest that this process yields p-doped ZnO. The spatial location of P atoms was studied using x-ray near-edge absorption structure spectroscopy and it is concluded that the doping is amphoteric with P atoms located on both Zn and O sites.

  10. Catalyst-Free Synthesis of ZnO Nanowires on Oxidized Silicon Substrate for Gas Sensing Applications.

    PubMed

    Behera, B; Chandra, S

    2015-06-01

    In the present work, we report the synthesis of nanostructured ZnO by oxidation of zinc film without using a seed or catalyst layer. The zinc films were deposited on oxidized Si substrates by RF magnetron sputtering process. These were oxidized in dry and wet air/oxygen ambient. The optimized process yielded long nanowires of ZnO having diameter of around 60-70 nm and spread uniformly over the surface. The effect of oxidation temperature, time, Zn film thickness and the ambient has strong influence on the morphology of resulting nanostruxctured ZnO film. The films were characterized by scanning electron microscopy for morphological studies and X-ray diffraction (XRD) analysis to study the phase of the nanostructured ZnO. Room temperature photoluminescence (PL) measurements of the nanowires show UV and green emission. A sensor was designed and fabricated using nanostructured ZnO film, incorporating inter-digital-electrode (IDE) for the measurement of resistance of the sensing layer. The gas sensing properties were investigated from the measurement of change in resistance when exposed to vapours of different volatile organic compound (VOC) such as acetone, ethanol, methanol and 2-propanol. The results suggest that ZnO nanowires fabricated by this method have potential application in gas sensors.

  11. Co-sensitized quantum dot solar cell based on ZnO nanowire

    NASA Astrophysics Data System (ADS)

    Chen, J.; Wu, J.; Lei, W.; Song, J. L.; Deng, W. Q.; Sun, X. W.

    2010-10-01

    An efficient photoelectrode is fabricated by sequentially assembled CdS and CdSe quantum dots (QDs) onto a ZnO-nanowire film. As revealed by UV-vis absorption spectrum and scanning electron microscopy (SEM), CdS and CdSe QDs can be effectively adsorbed on ZnO-nanowire array. Electrochemical impedance spectroscopy (EIS) measured demonstrates that the electron lifetime for ZnO/CdS/CdSe (13.8 ms) is calculated longer than that of ZnO/CdS device (6.2 ms), which indicates that interface charge recombination rate is reduced by sensitizing CdSe QDs. With broader light absorption range and longer electron lifetime, a power conversion efficiency of 1.42% is achieved for ZnO based CdS/CdSe co-sensitized solar cell under the illumination of one Sun (AM 1.5G, 100 mW cm -2).

  12. Fabrication of a Miniaturized ZnO Nanowire Accelerometer and Its Performance Tests

    PubMed Central

    Kim, Hyun Chan; Song, Sangho; Kim, Jaehwan

    2016-01-01

    This paper reports a miniaturized piezoelectric accelerometer suitable for a small haptic actuator array. The accelerometer is made with zinc oxide (ZnO) nanowire (NW) grown on a copper wafer by a hydrothermal process. The size of the accelerometer is 1.5 × 1.5 mm2, thus fitting the 1.8 × 1.8 mm2 haptic actuator array cell. The detailed fabrication process of the miniaturized accelerometer is illustrated. Performance evaluation of the fabricated accelerometer is conducted by comparing it with a commercial piezoelectric accelerometer. The output current of the fabricated accelerometer increases linearly with the acceleration. The miniaturized ZnO NW accelerometer is feasible for acceleration measurement of small and lightweight devices. PMID:27649184

  13. Molecular nitrogen acceptors in ZnO nanowires induced by nitrogen plasma annealing

    NASA Astrophysics Data System (ADS)

    Ton-That, C.; Zhu, L.; Lockrey, M. N.; Phillips, M. R.; Cowie, B. C. C.; Tadich, A.; Thomsen, L.; Khachadorian, S.; Schlichting, S.; Jankowski, N.; Hoffmann, A.

    2015-07-01

    X-ray absorption near-edge spectroscopy, photoluminescence, cathodoluminescence, and Raman spectroscopy have been used to investigate the chemical states of nitrogen dopants in ZnO nanowires. It is found that nitrogen exists in multiple states: NO,NZn, and loosely bound N2 molecule. The results establish a direct link between a donor-acceptor pair emission at 3.232 eV and the concentration of loosely bound N2. This work confirms that N2 at Zn site is a potential candidate for producing a shallow acceptor state in N-doped ZnO as theoretically predicted by Lambrecht and Boonchun [Phys. Rev. B 87, 195207 (2013), 10.1103/PhysRevB.87.195207]. Additionally, shallow acceptor states arising from NO complexes have been ruled out in this paper.

  14. Enhanced performance of triboelectric nanogenerators integrated with ZnO nanowires.

    PubMed

    Lee, Sanghyo; Ko, Wonbae; Hong, Jinpyo

    2014-12-01

    We report a hybrid nanogenerator matrix integrated with ZnO nanowires (NWs) for the use of combined triboelectric and piezoelectric features, where the ZnO NWs are grown on bottom electrodes via a hydrothermal method. Along with structural properties analyzed by scanning electron microscopy, the hybrid nanogenerator displayed an output power density of 0.21 mW/cm2, which was higher than that of the triboelectric nanogenerator without NWs. Therefore, our approach can allow for the enhancement of electrical output, with a view toward the realization of functional and self-powered devices of high performance in portable electronics, such as power source and electric self-powered sensor systems.

  15. The bandgap distribution investigated across the strain-induced bending ZnO nanowire

    NASA Astrophysics Data System (ADS)

    Tse, Geoffrey; Yu, Dapeng

    2016-12-01

    In this work, the strain dependence of electronic and optical properties in wurtzite zinc oxide (ZnO) lattice were explored. Ab initio density functional theory (DFT) was used in evaluating the energy bandgap and the dielectric tensor, respectively. The influence on the bandgap due to the shear distortion was so small that the reducing linear trends on uniaxial compressive/tensile strain were reported, in which the evolution of the absorption curve with uniaxial strain agrees well with the experimental results across the bending section. This study provides a set of useful data in analyzing the evolution of the optical adsorption across the bending ZnO nanowire, and gives a systematic explanation to the available experiments from the electronic structure’s perspective.

  16. Directed growth of horizontally aligned gallium nitride nanowires for nanoelectromechanical resonator arrays.

    PubMed

    Henry, Tania; Kim, Kyungkon; Ren, Zaiyuan; Yerino, Christopher; Han, Jung; Tang, Hong X

    2007-11-01

    We report the growth of horizontally aligned arrays and networks of GaN nanowires (NWs) as resonant components in nanoelectromechanical systems (NEMS). A combination of top-down selective area growth (SAG) and bottom-up vapor-liquid-solid (VLS) synthesis enables flexible fabrication of highly ordered nanowire arrays in situ with no postgrowth dispersion. Mechanical resonance of free-standing nanowires are measured, with quality factors (Q) ranging from 400 to 1000. We obtained a Young's modulus (E) of approximately 338 GPa from an array of NWs with varying diameters and lengths. The measurement allows detection of nanowire motion with a rotating frame and reveals dual fundamental resonant modes in two orthogonal planes. A universal ratio between the resonant frequencies of these two fundamental modes, irrespective of their dimensions, is observed and attributed to an isosceles cross section of GaN NWs.

  17. Self-aligned multi-channel silicon nanowire field-effect transistors

    NASA Astrophysics Data System (ADS)

    Zhu, Hao; Li, Qiliang; Yuan, Hui; Baumgart, Helmut; Ioannou, Dimitris E.; Richter, Curt A.

    2012-12-01

    Si nanowire field effect transistors (SiNW FETs) with multiple nanowire channels and different gate lengths have been fabricated by using a directed assembly approach combined with a standard photolithographic process. The electrical characteristics of SiNW FETs containing different numbers of nanowire channels were measured and compared. The multi-channel SiNW FETs show excellent performance: small subthreshold slope (≈75 mV/dec), large ON/OFF ratio (≈108), good break-down voltage (>30 V) and good carrier mobility (μp ≈ 100 cm2 V-1s-1). These excellent device properties were achieved by using a clean self-alignment process and an improved device structure with Schottky barriers at the source and drain contacts. Such high-performance multi-nanowire FETs are attractive for logic, memory, and sensor applications.

  18. Double-sided CdS and CdSe quantum dot co-sensitized ZnO nanowire arrays for photoelectrochemical hydrogen generation.

    PubMed

    Wang, Gongming; Yang, Xunyu; Qian, Fang; Zhang, Jin Z; Li, Yat

    2010-03-10

    We report the design and characterization of a novel double-sided CdS and CdSe quantum dot cosensitized ZnO nanowire arrayed photoanode for photoelectrochemical (PEC) hydrogen generation. The double-sided design represents a simple analogue of tandem cell structure, in which the dense ZnO nanowire arrays were grown on an indium-tin oxide substrate followed by respective sensitization of CdS and CdSe quantum dots on each side. As-fabricated photoanode exhibited strong absorption in nearly the entire visible spectrum up to 650 nm, with a high incident-photon-to-current-conversion efficiency (IPCE) of approximately 45% at 0 V vs Ag/AgCl. On the basis on a single white light illumination of 100 mW/cm(2), the photoanode yielded a significant photocurrent density of approximately 12 mA/cm(2) at 0.4 V vs Ag/AgCl. The photocurrent and IPCE were enhanced compared to single quantum dot sensitized structures as a result of the band alignment of CdS and CdSe in electrolyte. Moreover, in comparison to single-sided cosensitized layered structures, this double-sided architecture that enables direct interaction between quantum dot and nanowire showed improved charge collection efficiency. Our result represents the first double-sided nanowire photoanode that integrates uniquely two semiconductor quantum dots of distinct band gaps for PEC hydrogen generation and can be possibly applied to other applications such as nanostructured tandem photovoltaic cells.

  19. Fabrication of vertically aligned Pd nanowire array in AAO template by electrodeposition using neutral electrolyte

    PubMed Central

    2010-01-01

    A vertically aligned Pd nanowire array was successfully fabricated on an Au/Ti substrate using an anodic aluminum oxide (AAO) template by a direct voltage electrodeposition method at room temperature using diluted neutral electrolyte. The fabrication of Pd nanowires was controlled by analyzing the current–time transient during electrodeposition using potentiostat. The AAO template and the Pd nanowires were characterized by scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) methods and X-Ray diffraction (XRD). It was observed that the Pd nanowire array was standing freely on an Au-coated Ti substrate after removing the AAO template in a relatively large area of about 5 cm2, approximately 50 nm in diameter and 2.5 μm in length with a high aspect ratio. The nucleation rate and the number of atoms in the critical nucleus were determined from the analysis of current transients. Pd nuclei density was calculated as 3.55 × 108 cm−2. Usage of diluted neutral electrolyte enables slower growing of Pd nanowires owing to increase in the electrodeposition potential and thus obtained Pd nanowires have higher crystallinity with lower dislocations. In fact, this high crystallinity of Pd nanowires provides them positive effect for sensor performances especially. PMID:20596417

  20. Vertically aligned cadmium chalcogenide nanowire arrays on muscovite mica: a demonstration of epitaxial growth strategy.

    PubMed

    Utama, Muhammad Iqbal Bakti; Peng, Zeping; Chen, Rui; Peng, Bo; Xu, Xinlong; Dong, Yajie; Wong, Lai Mun; Wang, Shijie; Sun, Handong; Xiong, Qihua

    2011-08-10

    We report a strategy for achieving epitaxial, vertically aligned cadmium chalcogenide (CdS, CdSe, and CdTe) nanowire arrays utilizing van der Waals epitaxy with (001) muscovite mica substrate. The nanowires, grown from a vapor transport process, exhibited diameter uniformity throughout their length, sharp interface to the substrate, and positive correlation between diameter and length with preferential growth direction of [0001] for the monocrystalline wurtzite CdS and CdSe nanowires, but of [111] for zinc blende CdTe nanowires, which also featured abundant twinning boundaries. Self-catalytic vapor-liquid-solid mechanism with hydrogen-assisted thermal evaporation is proposed to intepret the observations. Optical absorption from the as-grown CdSe nanowire arrays on mica at 10 K revealed intense first-order exciton absorption and its longitudinal optical phonon replica. A small Stokes shift (∼1.3 meV) was identified, suggesting the high quality of the nanowires. This study demonstrated the generality of van der Waals epitaxy for the growth of nanowire arrays and their potential applications in optical and energy related devices.

  1. ZnO homojunction photodiodes based on Sb-doped p-type nanowire array and n-type film for ultraviolet detection

    SciTech Connect

    Wang Guoping; Chu Sheng; Zhan Ning; Liu Jianlin; Lin Yuqing; Chernyak, Leonid

    2011-01-24

    ZnO p-n homojunctions based on Sb-doped p-type nanowire array and n-type film were grown by combining chemical vapor deposition (for nanowires) with molecular-beam epitaxy (for film). Indium tin oxide and Ti/Au were used as contacts to the ZnO nanowires and film, respectively. Characteristics of field-effect transistors using ZnO nanowires as channels indicate p-type conductivity of the nanowires. Electron beam induced current profiling confirmed the existence of ZnO p-n homojunction. Rectifying I-V characteristic showed a turn-on voltage of around 3 V. Very good response to ultraviolet light illumination was observed from photocurrent measurements.

  2. Cobalt-doped ZnO nanowires on quartz: Synthesis by simple chemical method and characterization

    NASA Astrophysics Data System (ADS)

    Vempati, Sesha; Shetty, Amitha; Dawson, P.; Nanda, Karunakar; Krupanidhi, S. B.

    2012-03-01

    The synthesis of cobalt-doped ZnO nanowires is achieved using a simple, metal salt decomposition growth technique. A sequence of drop casting on a quartz substrate held at 100 °C and annealing results in the growth of nanowires of average (modal) length ˜200 nm and diameter of 15±4 nm and consequently an aspect ratio of ˜13. A variation in the synthesis process, where the solution of mixed salts is deposited on the substrate at 25 °C, yields a grainy film structure which constitutes a useful comparator case. X-ray diffraction shows a preferred [0001] growth direction for the nanowires while a small unit cell volume contraction for Co-doped samples and data from Raman spectroscopy indicate incorporation of the Co dopant into the lattice; neither technique shows explicit evidence of cobalt oxides. Also the nanowire samples display excellent optical transmission across the entire visible range, as well as strong photoluminescence (exciton emission) in the near UV, centered at 3.25 eV.

  3. Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance

    PubMed Central

    2014-01-01

    An easy and low-cost method to transfer large-scale horizontally aligned Si nanowires onto a substrate is reported. Si nanowires prepared by metal-assisted chemical etching were assembled and anchored to fabricate multiwire photoconductive devices with standard Si technology. Scanning electron microscopy images showed highly aligned and successfully anchored Si nanowires. Current-voltage tests showed an approximately twofold change in conductivity between the devices in dark and under laser irradiation. Fully reversible light switching ON/OFF response was also achieved with an ION/IOFF ratio of 230. Dynamic response measurement showed a fast switching feature with response and recovery times of 10.96 and 19.26 ms, respectively. PMID:25520603

  4. Temperature dependent conduction and UV induced metal-to-insulator transition in ZnO nanowires

    SciTech Connect

    Chang, P.-C.; Lu, Jia Grace

    2008-05-26

    Thin ZnO nanowires with diameters of less than 50 nm are configured as field effect transistors and studied for their transport mechanisms at different temperatures under UV illumination and gate modulation. The conductivity exhibits two regimes: at T>50 K, thermally activated transport dominates with activation energy around 30-60 meV attributed to the shallow donor states and at T<50 K, three dimensional variable range hopping reveals in the conduction. In addition, UV irradiation leads to a metal-to-insulator transition at {approx}210 K. Furthermore, electrostatic gating results in a band bending giving rise to a change in the activation energy.

  5. A ZnO nanowire-based photo-inverter with pulse-induced fast recovery

    NASA Astrophysics Data System (ADS)

    Ali Raza, Syed Raza; Lee, Young Tack; Hosseini Shokouh, Seyed Hossein; Ha, Ryong; Choi, Heon-Jin; Im, Seongil

    2013-10-01

    We demonstrate a fast response photo-inverter comprised of one transparent gated ZnO nanowire field-effect transistor (FET) and one opaque FET respectively as the driver and load. Under ultraviolet (UV) light the transfer curve of the transparent gate FET shifts to the negative side and so does the voltage transfer curve (VTC) of the inverter. After termination of UV exposure the recovery of photo-induced current takes a long time in general. This persistent photoconductivity (PPC) is due to hole trapping on the surface of ZnO NWs. Here, we used a positive voltage short pulse after UV exposure, for the first time resolving the PPC issue in nanowire-based photo-detectors by accumulating electrons at the ZnO/dielectric interface. We found that a pulse duration as small as 200 ns was sufficient to reach a full recovery to the dark state from the UV induced state, realizing a fast UV detector with a voltage output.We demonstrate a fast response photo-inverter comprised of one transparent gated ZnO nanowire field-effect transistor (FET) and one opaque FET respectively as the driver and load. Under ultraviolet (UV) light the transfer curve of the transparent gate FET shifts to the negative side and so does the voltage transfer curve (VTC) of the inverter. After termination of UV exposure the recovery of photo-induced current takes a long time in general. This persistent photoconductivity (PPC) is due to hole trapping on the surface of ZnO NWs. Here, we used a positive voltage short pulse after UV exposure, for the first time resolving the PPC issue in nanowire-based photo-detectors by accumulating electrons at the ZnO/dielectric interface. We found that a pulse duration as small as 200 ns was sufficient to reach a full recovery to the dark state from the UV induced state, realizing a fast UV detector with a voltage output. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr03801g

  6. ZnO nanowire arrays synthesized on ZnO and GaN films for photovoltaic and light-emitting devices

    NASA Astrophysics Data System (ADS)

    Janfeshan, Bita; Sadeghimakki, Bahareh; Sadeghi Jahed, Navid Mohammad; Sivoththaman, Siva

    2014-01-01

    The wide bandgap, one-dimensional zinc oxide (ZnO) nanowires (NWs) and their heterostructures with other materials provide excellent pathways for efficient photovoltaic (PV) and light-emitting devices. ZnO NWs sensitized with quantum dots (QDs) provide high-surface area and tunable bandgap absorbers with a directional path for carriers in advanced PV devices, while ZnO heterojunctions with other p-type wide bandgap materials lead to light-emitting diodes (LEDs) with better emission and waveguiding properties compared with the homojunction counterparts. Synthesis of the structures with the desired morphology is a key to device applications. In this work, ZnO NW arrays were synthesized using hydrothermal method on ZnO and GaN thin films. Highly crystalline, upright, and ordered arrays of ZnO NWs in the 50 to 250-nm diameter range and 1 μm in length were obtained. The morphology and optical properties of the NWs were studied. Energy dispersive x-ray spectroscopy (EDX) analysis revealed nonstoichiometric oxygen content in the grown ZnO NWs. Photoluminescence (PL) studies depicted the presence of oxygen vacancy and interstitial zinc defects in the grown ZnO NWs, underlining the potential for LEDs. Further, hydrophobically ligated CdSe/ZnS QDs were successfully incorporated to the NW arrays. PL analysis indicated the injection of electrons from photoexcited QDs to the NWs, showing the potential for quantum dot-sensitized solar cells.

  7. Fabrication of Si3N4 nanowire membranes: free standing disordered nanopapers and aligned nanowire assemblies

    NASA Astrophysics Data System (ADS)

    Liu, Haitao; Fang, Minghao; Huang, Zhaohui; Huang, Juntong; Liu, Yan-gai; Wu, Xiaowen

    2016-08-01

    Herein, ultralong silicon nitride nanowires were synthesized via a chemical vapor deposition method by using the low-cost quartz and silicon powder as raw materials. Simple processes were used for the fabrication of disordered and ordered nanowire membranes of pure silicon nitride nanowires. The nanowires in the disordered nanopapers are intertwined with each other to form a paper-like structure which exhibit excellent flame retardancy and mechanical properties. Fourier-transform infrared spectroscopy and thermal gravity analysis were employed to characterize the refractory performance of the disordered nanopapers. Highly ordered nanowire membranes were also assembled through a three-phase assembly approach which make the Si3N4 nanowires have potential use in textured ceramics and semiconductor field. Moreover, the surface nanowires can also be modified to be hydrophobic; this characteristic make the as-prepared nanowires have the potential to be assembled by the more effective Langmuir-Blodgett method and also make the disordered nanopapers possess a super-hydrophobic surface.

  8. Origin of the Phase Transition of AlN, GaN, and ZnO Nanowires

    SciTech Connect

    Wu, Y.; Chen, G.; Ye, H.; Zhu, Y.; Wei, S. H.

    2009-06-01

    The stabilities of AlN, GaN, and ZnO nanowires/nanorods with different structures and sizes are investigated using first-principles calculations. We found a structure transformation from the graphitelike phase to wurtzite phase as the diameter and length of the nanowire increases. We show that this is due to the competition between the bond energy, the Coulomb energy, and the energy originating from the dipole field of the wurtzite structure. A mechanism of growing uniform nanowires using a graphitelike structure as a precursor is proposed through analyzing the phase diagram of these materials.

  9. One step solution synthesis towards ultra-thin and uniform single-crystalline ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Ho, G. W.; Wong, A. S. W.

    2007-03-01

    Bundles of high-aspect-ratio single-crystalline ZnO nanowires were fabricated by a single-step mild hydrothermal condition without the use of a seeding layer, thus eliminating an annealing step. The growth yields nanowires of high aspect ratio (>200). No significant lateral growth takes place with prolonged reaction time. The morphology and aspect ratio of the final products depend on the concentration of the precursors; a highly water-soluble tetradentate cyclic tertiary amine and zinc nitrate system. The nanowires grow along the [0001] direction and have an average width of <10 nm and a narrow distribution of ±5 nm. Photoluminescence measurements of the ultra-thin nanowires exhibit a strong band-edge emission at room temperature. The highly crystalline sub tens of nanometer scale diameter nanowires can, in combination, be a good one-dimensional candidate to study optical and electronic properties.

  10. Fabrication and characterization of ultraviolet photosensors from ZnO nanowires prepared using chemical bath deposition method

    NASA Astrophysics Data System (ADS)

    Al-Asadi, Ahmed S.; Henley, Luke Alexander; Ghosh, Sujoy; Quetz, Abdiel; Dubenko, Igor; Pradhan, Nihar; Balicas, Luis; Perea-Lopez, Nestor; Carozo, Victor; Lin, Zhong; Terrones, Mauricio; Talapatra, Saikat; Ali, Naushad

    2016-02-01

    Highly crystalline zinc oxide (ZnO) nanowires (NWs) were synthesized through chemical bath deposition (CBD) method by using a simple seeding technique. The process includes dispersion of commercially available ZnO nanoparticles through spraying on a desired substrate prior to the CBD growth. A typical growth period of 16 h produced ZnO NW assemblies with an average diameter of ˜45 nm and lengths of 1-1.3 μm, with an optical band gap of ˜3.61 eV. The as-prepared ZnO NWs were photoactive under ultra violet (UV) illumination. Photodetector devices fabricated using these NW assemblies demonstrated a high photoresponse factor of ˜40 and 120 at room temperature under moderate UV illumination power of ˜250 μW/cm2. These findings indicate the possibility of using ZnO NWs, grown using the simple method discussed in this paper, for various opto-electronic applications.

  11. Schottky-contacted vertically self-aligned ZnO nanorods for hydrogen gas nanosensor applications

    SciTech Connect

    Ranwa, Sapana; Kumar, Mohit; Kumar, Mahesh; Singh, Jitendra; Fanetti, Mattia

    2015-07-21

    Vertically well aligned ZnO nanorods (NRs) were grown on Si(100) substrate using RF magnetron sputtering technique. Scanning electron microscopy images confirms uniform distribution of NRs on 2 in. wafer with average diameter, height and density being ∼75 nm, ∼850 nm, and ∼1.5 × 10{sup 10} cm{sup −2}, respectively. X-ray diffraction reveals that the ZnO NRs are grown along c-axis direction with wurtzite crystal structure. Cathodoluminescence spectroscopy, which shows a single strong peak around 3.24 eV with full width half maxima 130 meV, indicates the high crystalline and optical quality of ZnO and very low defect density. Vertically aligned nanosensors were fabricated by depositing gold circular Schottky contacts on ZnO NRs. Resistance responses of nanosensors were observed in the range from 50 to 150 °C in 1% and 5% hydrogen in argon environment, which is below and above the explosive limit (4%) of hydrogen in air. The nanosensor's sensitivity increases from 11% to 67% with temperature from 50 to 150 °C and also shows fast response time (9–16 s) and moderate recovery time (100–200 s). A sensing mechanism is proposed based on Schottky barrier changes at heterojunctions and change in depletion region of NRs.

  12. ZnO nanowire/reduced graphene oxide nanocomposites for significantly enhanced photocatalytic degradation of Rhodamine 6G

    NASA Astrophysics Data System (ADS)

    Zhang, Chao; Zhang, Jing; Su, Yanjie; Xu, Minghan; Yang, Zhi; Zhang, Yafei

    2014-02-01

    We have demonstrated a facile and low-cost approach to synthesize ZnO nanowire (NW)/reduced graphene oxide (RGO) nanocomposites, in which ZnO NWs and graphene oxide (GO) were produced in large scale separately and then hybridized into ZnO NW/RGO nanocomposites by mechanical mixing and low-temperature thermal reduction. Rhodamine 6G (Rh6G) was used as a model dye to evaluate the photocatalytic properties of ZnO NW/RGO nanocomposites. The obtained nanocomposites show significantly enhanced photocatalytic performance, which took only 10 min to decompose over 98% Rh6G. Finally the mechanism of the great enhancement about photocatalytic activity of ZnO NW/RGO nanocomposites is studied. It is mainly attributed to that RGO nanosheets can transfer the electrons of ZnO NWs excited by ultraviolet (UV) irradiation, increase electron migration efficiency, and then longer the lifetime of the holes in ZnO NWs. The high charge separation efficiency of photo-generated electron-hole pairs directly leads to the lower recombination rate of ZnO NW/RGO nanocomposites, makes more effective electrons and holes to participate the radical reactions with Rh6G, thus significantly improving the photocatalytic properties. The high degradation efficiency makes the ZnO NW/RGO nanocomposites promising candidates in the application of environmental pollutant and wastewater treatment.

  13. A ZnO nanowire-based photo-inverter with pulse-induced fast recovery.

    PubMed

    Raza, Syed Raza Ali; Lee, Young Tack; Hosseini Shokouh, Seyed Hossein; Ha, Ryong; Choi, Heon-Jin; Im, Seongil

    2013-11-21

    We demonstrate a fast response photo-inverter comprised of one transparent gated ZnO nanowire field-effect transistor (FET) and one opaque FET respectively as the driver and load. Under ultraviolet (UV) light the transfer curve of the transparent gate FET shifts to the negative side and so does the voltage transfer curve (VTC) of the inverter. After termination of UV exposure the recovery of photo-induced current takes a long time in general. This persistent photoconductivity (PPC) is due to hole trapping on the surface of ZnO NWs. Here, we used a positive voltage short pulse after UV exposure, for the first time resolving the PPC issue in nanowire-based photo-detectors by accumulating electrons at the ZnO/dielectric interface. We found that a pulse duration as small as 200 ns was sufficient to reach a full recovery to the dark state from the UV induced state, realizing a fast UV detector with a voltage output.

  14. Solution-processed Ag-doped ZnO nanowires grown on flexible polyester for nanogenerator applications

    NASA Astrophysics Data System (ADS)

    Lee, Sanghyo; Lee, Junseok; Ko, Wonbae; Cha, Seungnam; Sohn, Junginn; Kim, Jongmin; Park, Jaegun; Park, Youngjun; Hong, Jinpyo

    2013-09-01

    The integration of ZnO nanowire-based energy harvesting devices into flexible polyesters or clothes would have a significant effect on the energy harvesting building block for harvesting the mechanical energy from human motions. Moreover, the demonstration of high output power via a doping process opens an important method for enhancing the output power. Here, we report solution-based synthesis of Ag-doped ZnO nanowires on flexible polyester substrates without using any high temperature annealing processes. Along with the structural and optical characteristics of the Ag-doped ZnO nanowires, we demonstrate the efficient features of Ag-doped nanogenerators through the measurement of a sound-driven piezoelectric energy device with an output power of 0.5 μW, which is nearly 2.9 times that of a nanogenerator with un-doped ZnO NWs. This finding could provide the possibility of high output nanogenerators for practical applications in future portable/wearable personal displays and motion sensors.The integration of ZnO nanowire-based energy harvesting devices into flexible polyesters or clothes would have a significant effect on the energy harvesting building block for harvesting the mechanical energy from human motions. Moreover, the demonstration of high output power via a doping process opens an important method for enhancing the output power. Here, we report solution-based synthesis of Ag-doped ZnO nanowires on flexible polyester substrates without using any high temperature annealing processes. Along with the structural and optical characteristics of the Ag-doped ZnO nanowires, we demonstrate the efficient features of Ag-doped nanogenerators through the measurement of a sound-driven piezoelectric energy device with an output power of 0.5 μW, which is nearly 2.9 times that of a nanogenerator with un-doped ZnO NWs. This finding could provide the possibility of high output nanogenerators for practical applications in future portable/wearable personal displays and motion

  15. Effects of Nanowire Length and Surface Roughness on the Electrochemical Sensor Properties of Nafion-Free, Vertically Aligned Pt Nanowire Array Electrodes.

    PubMed

    Li, Zhiyang; Leung, Calvin; Gao, Fan; Gu, Zhiyong

    2015-09-04

    In this paper, vertically aligned Pt nanowire arrays (PtNWA) with different lengths and surface roughnesses were fabricated and their electrochemical performance toward hydrogen peroxide (H₂O₂) detection was studied. The nanowire arrays were synthesized by electroplating Pt in nanopores of anodic aluminum oxide (AAO) template. Different parameters, such as current density and deposition time, were precisely controlled to synthesize nanowires with different surface roughnesses and various lengths from 3 μm to 12 μm. The PtNWA electrodes showed better performance than the conventional electrodes modified by Pt nanowires randomly dispersed on the electrode surface. The results indicate that both the length and surface roughness can affect the sensing performance of vertically aligned Pt nanowire array electrodes. Generally, longer nanowires with rougher surfaces showed better electrochemical sensing performance. The 12 μm rough surface PtNWA presented the largest sensitivity (654 μA·mM⁻¹·cm⁻²) among all the nanowires studied, and showed a limit of detection of 2.4 μM. The 12 μm rough surface PtNWA electrode also showed good anti-interference property from chemicals that are typically present in the biological samples such as ascorbic, uric acid, citric acid, and glucose. The sensing performance in real samples (river water) was tested and good recovery was observed. These Nafion-free, vertically aligned Pt nanowires with surface roughness control show great promise as versatile electrochemical sensors and biosensors.

  16. Effects of Nanowire Length and Surface Roughness on the Electrochemical Sensor Properties of Nafion-Free, Vertically Aligned Pt Nanowire Array Electrodes

    PubMed Central

    Li, Zhiyang; Leung, Calvin; Gao, Fan; Gu, Zhiyong

    2015-01-01

    In this paper, vertically aligned Pt nanowire arrays (PtNWA) with different lengths and surface roughnesses were fabricated and their electrochemical performance toward hydrogen peroxide (H2O2) detection was studied. The nanowire arrays were synthesized by electroplating Pt in nanopores of anodic aluminum oxide (AAO) template. Different parameters, such as current density and deposition time, were precisely controlled to synthesize nanowires with different surface roughnesses and various lengths from 3 μm to 12 μm. The PtNWA electrodes showed better performance than the conventional electrodes modified by Pt nanowires randomly dispersed on the electrode surface. The results indicate that both the length and surface roughness can affect the sensing performance of vertically aligned Pt nanowire array electrodes. Generally, longer nanowires with rougher surfaces showed better electrochemical sensing performance. The 12 μm rough surface PtNWA presented the largest sensitivity (654 μA·mM−1·cm−2) among all the nanowires studied, and showed a limit of detection of 2.4 μM. The 12 μm rough surface PtNWA electrode also showed good anti-interference property from chemicals that are typically present in the biological samples such as ascorbic, uric acid, citric acid, and glucose. The sensing performance in real samples (river water) was tested and good recovery was observed. These Nafion-free, vertically aligned Pt nanowires with surface roughness control show great promise as versatile electrochemical sensors and biosensors. PMID:26404303

  17. TiO₂ nanowire dispersions in viscous polymer matrix: electrophoretic alignment and optical properties.

    PubMed

    Šutka, Andris; Saal, Kristjan; Kisand, Vambola; Lõhmus, Rünno; Joost, Urmas; Timusk, Martin

    2014-10-17

    The changes in optical properties during TiO₂ nanowire orientation in polydimethylsiloxane (PDMS) matrix under the influence of an electric field are strongly influenced by nanowire (NW) diameter. It was demonstrated for the first time that either positive or negative change in transmittance can be induced by NW alignment parallel to the electric field depending on the NW diameter. These effects can be explained by the interplay between scattering and reflectance. Experimental findings reported could be important for smart window applications for the regulation of visible or even infrared transparency, thus reducing the energy consumption by air conditioning systems in buildings and automobiles in the future.

  18. Fast monolayer adsorption and slow energy transfer in CdSe quantum dot sensitized ZnO nanowires.

    PubMed

    Zheng, Kaibo; Žídek, Karel; Abdellah, Mohamed; Torbjörnsson, Magne; Chábera, Pavel; Shao, Shuyan; Zhang, Fengling; Pullerits, Tõnu

    2013-07-25

    A method for CdSe quantum dot (QD) sensitization of ZnO nanowires (NW) with fast adsorption rate is applied. Photoinduced excited state dynamics of the quantum dots in the case of more than monolayer coverage of the nanowires is studied. Transient absorption kinetics reveals an excitation depopulation process of indirectly attached quantum dots with a lifetime of ~4 ns. Photoluminescence and incident photon-to-electron conversion efficiency show that this process consists of both radiative e-h recombination and nonradiative excitation-to-charge conversion. We argue that the latter occurs via interdot energy transfer from the indirectly attached QDs to the dots with direct contact to the nanowires. From the latter, fast electron injection into ZnO occurs. The energy transfer time constant is found to be around 5 ns.

  19. Synthesis and photoluminescence properties of aligned Zn{sub 2}GeO{sub 4} coated ZnO nanorods and Ge doped ZnO nanocombs

    SciTech Connect

    Su Yong; Meng Xia Chen Yiqing; Li Sen; Zhou Qingtao; Liang Xuemei; Feng Yi

    2008-07-01

    Aligned Zn{sub 2}GeO{sub 4} coated ZnO nanorods and Ge doped ZnO nanocombs were synthesized on a silicon substrate by a simple thermal evaporation method. The structure and morphology of the as-synthesized nanostructure were characterized using scanning electron microscopy and transmission electron microscopy. The growth of aligned Zn{sub 2}GeO{sub 4} coated ZnO nanorods and Ge doped ZnO nanocombs follows a vapor-solid (VS) process. Photoluminescence properties were also investigated at room temperature. The photoluminescence spectrum reveals the nanostructures have a sharp ultraviolet luminescence peak centered at 382 nm and a broad green luminescence peak centered at about 494 nm.

  20. Competing gas phase reactions during vapor transport deposition of ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Driscoll, Eric; Range, Kevin; Tzolov, Marian

    2012-02-01

    We present results illuminating some of the major chemical processes in the vapor deposition of ZnO nanowires. The analysis of our deposition experiments indicates that carbon dioxide is a major oxidizing agent rather than carbon monoxide as previously thought. Additionally, we present evidence that carbon monoxide will etch zinc oxide at high temperatures. Zinc oxide nanowires have been prepared by using chemical vapor deposition on silicon (100) substrates with a 10-15nm layer of gold as a catalyst. Zinc oxide and graphite powders were heated to approximately 1000^oC in a tube furnace in a flow of argon. We have delivered oxygen gas specifically in the growth zone to facilitate the formation of high aspect ratio nanowire growth. Thermodynamics calculations were used to justify the growth and etching processes. Imaging of samples was performed with scanning electron microscopy. Chemical composition was determined by energy dispersive x-ray spectroscopy. Photoluminescence spectroscopy was used to characterize the emission properties of the zinc oxide samples.

  1. Contact properties and surface reaction kinetics of single ZnO nanowire devices fabricated by dielectrophoresis

    NASA Astrophysics Data System (ADS)

    Pau, J. L.; García Núñez, C.; García Marín, A.; Guerrero, C.; Rodríguez, P.; Borromeo, S.; Piqueras, J.

    2014-03-01

    This work describes the development of ZnO nanowire (NW) devices for ultraviolet detection and cost-effective gas sensing. A dielectrophoresis (DEP) flow cell fabricated for the integration of NWs on different substrates is presented. The system includes the possibility to set characteristic parameters such as alternating current (AC) frequency, amplitude or flow speed in order to control NW trapping on specific sites defined by micro-gapped electrodes. The electrical characteristics of the rectifying metal/NW contact fabricated by DEP are investigated in darkness and under direct illumination of the metal-NW interface through the ZnO NW. A significant downshift of the turn-on voltage is observed in the current-voltage characteristics during the illumination with photon energies higher than the ZnO bandgap. The reduction is attributed to a barrier height lowering induced by interface charge emission. The effects of AC bias on the thermal drift of the DC average current in NW devices are also discussed. Finally, the reaction kinetics of ethanol and water vapors on the NW surface are compared through the analysis of the DC current under direct exposure to gas flows. Device responses to more complex compound mixtures such as coffee or mint are also monitored over time, showing different performance in both cases.

  2. Well-Aligned Arrays of Vertically Oriented ZnO Nanorod Films for Photocatalytic Degradation of Textile Dye

    NASA Astrophysics Data System (ADS)

    Nasr-Esfahani, Mojtaba; Nekoubin, Amin

    2011-05-01

    Well-aligned hexagonal ZnO nanorods arrays were synthesized via mild hydrothermal method under different conditions. A two-step approach was employed for the epitaxial growth of ZnO. First a ZnO seed layer was prepared by spin-coating process and then ZnO nanorods were deposited on it. The influences of growth time on the surface morphology, length, diameters and phase structure of ZnO rods films were investigated by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The photocatalytic degradation of X6G an anionic monoazo dye, in aqueous solutions, was investigated and the effects of hydrothermal process time were examined. The results showed that the ZnO nonorods film hydrothermal treated for 4 h have a very high photocatalytic performance.

  3. Field emission from in situ-grown vertically aligned SnO2 nanowire arrays

    PubMed Central

    2012-01-01

    Vertically aligned SnO2 nanowire arrays have been in situ fabricated on a silicon substrate via thermal evaporation method in the presence of a Pt catalyst. The field emission properties of the SnO2 nanowire arrays have been investigated. Low turn-on fields of 1.6 to 2.8 V/μm were obtained at anode-cathode separations of 100 to 200 μm. The current density fluctuation was lower than 5% during a 120-min stability test measured at a fixed applied electric field of 5 V/μm. The favorable field-emission performance indicates that the fabricated SnO2 nanowire arrays are promising candidates as field emitters. PMID:22330800

  4. Preparation of highly aligned silicon oxide nanowires with stable intensive photoluminescence

    NASA Astrophysics Data System (ADS)

    Duraia, El-Shazly M.; Mansurov, Z. A.; Tokmolden, S.; Beall, Gary W.

    2010-02-01

    In this work we report the successful formation of highly aligned vertical silicon oxide nanowires. The source of silicon was from the substrate itself without any additional source of silicon. X-ray measurement demonstrated that our nanowires are amorphous. Photoluminescence measurements were conducted through 18 months and indicated that there is a very good intensive emission peaks near the violet regions. The FTIR measurements indicated the existence of peaks at 463, 604, 795 and a wide peak at 1111 cm -1 and this can be attributed to Si-O-Si and Si-O stretching vibrations. We also report the formation of the octopus-like silicon oxide nanowires and the growth mechanism of these structures was discussed.

  5. Cl-doped ZnO nanowires with metallic conductivity and their application for high-performance photoelectrochemical electrodes.

    PubMed

    Wang, Fei; Seo, Jung-Hun; Li, Zhaodong; Kvit, Alexander V; Ma, Zhenqiang; Wang, Xudong

    2014-01-22

    Doping semiconductor nanowires (NWs) for altering their electrical and optical properties is a critical strategy for tailoring the performance of nanodevices. ZnO NWs grown by hydrothermal method are pervasively used in optoelectronic, photovoltaic, and piezoelectric energy-harvesting devices. We synthesized in situ Cl-doped ZnO NWs with metallic conductivity that would fit seamlessly with these devices and improve their performance. Possible Cl doping mechanisms were discussed. UV-visible absorption spectroscopy confirmed the visible light transparency of Cl-doped ZnO NWs. Cl-doped ZnO NW/TiO2 core/shell-structured photoelectrochemical (PEC) anode was fabricated to demonstrate the application potential of highly conductive ZnO NWs. Higher photocurrent density and overall PEC efficiency compared with the undoped ZnO NW-based device were achieved. The successful doping and low resistivity of ZnO could unlock the potential of ZnO NWs for applications in low-cost flexible transparent electrodes.

  6. Tuning of structural, optical, and magnetic properties of ultrathin and thin ZnO nanowire arrays for nano device applications

    PubMed Central

    2014-01-01

    One-dimensional (1-D) ultrathin (15 nm) and thin (100 nm) aligned 1-D (0001) and (0001¯) oriented zinc oxide (ZnO) nanowire (NW) arrays were fabricated on copper substrates by one-step electrochemical deposition inside the pores of polycarbonate membranes. The aspect ratio dependence of the compressive stress because of the lattice mismatch between NW array/substrate interface and crystallite size variations is investigated. X-ray diffraction results show that the polycrystalline ZnO NWs have a wurtzite structure with a = 3.24 Å, c = 5.20 Å, and [002] elongation. HRTEM and SAED pattern confirmed the polycrystalline nature of ultrathin ZnO NWs and lattice spacing of 0.58 nm. The crystallite size and compressive stress in as-grown 15- and 100-nm wires are 12.8 nm and 0.2248 GPa and 22.8 nm and 0.1359 GPa, which changed to 16.1 nm and 1.0307 GPa and 47.5 nm and 1.1677 GPa after annealing at 873 K in ultrahigh vacuum (UHV), respectively. Micro-Raman spectroscopy showed that the increase in E2 (high) phonon frequency corresponds to much higher compressive stresses in ultrathin NW arrays. The minimum-maximum magnetization magnitude for the as-grown ultrathin and thin NW arrays are approximately 8.45 × 10−3 to 8.10 × 10−3 emu/g and approximately 2.22 × 10−7 to 2.190 × 10−7 emu/g, respectively. The magnetization in 15-nm NW arrays is about 4 orders of magnitude higher than that in the 100 nm arrays but can be reduced greatly by the UHV annealing. The origin of ultrathin and thin NW array ferromagnetism may be the exchange interactions between localized electron spin moments resulting from oxygen vacancies at the surfaces of ZnO NWs. The n-type conductivity of 15-nm NW array is higher by about a factor of 2 compared to that of the 100-nm ZnO NWs, and both can be greatly enhanced by UHV annealing. The ability to tune the stresses and the structural and relative occupancies of ZnO NWs in a wide range by annealing has

  7. Development of Ohmic nanocontacts via surface modification for nanowire-based electronic and optoelectronic devices: ZnO nanowires as an example.

    PubMed

    He, Jr-Hau; Ke, Jr-Jian; Chang, Pei-Hsin; Tsai, Kun-Tong; Yang, P C; Chan, I-Min

    2012-06-07

    We demonstrated a nanocontacting scheme using a focus ion beam (FIB) system without further heat treatment for ZnO nanowires. This scheme includes Ga ion surface modification and direct-write Pt deposition induced by Ga ion, leading to an Ohmic nanocontact with a specific contact resistance as low as 2.5 × 10(-6)Ω cm(2). Temperature-dependent measurements show that the transport of the FIB-Pt contact on the ZnO nanowire with local surface modification is governed by field emission tunneling. Taking advantage of area-selected and room-temperature processes, Ga ion surface modification and direct-write Pt deposition using a FIB system demonstrates a feasible Ohmic scheme.

  8. Controllable growth and characterization of highly aligned ZnO nanocolumnar thin films

    NASA Astrophysics Data System (ADS)

    Onuk, Zuhal; Rujisamphan, Nopporn; Murray, Roy; Bah, Mohamed; Tomakin, Murat; Shah, S. Ismat

    2017-02-01

    We investigated the effects of growth conditions during magnetron sputtering on the structural, morphological, and optical properties of nanostructured ZnO thin films. Undoped ZnO thin films are deposited onto p-type Si (100) and corning 7059 glass substrates by RF magnetron sputtering using a ZnO target in combination with various Ar-O2 sputtering gas mixtures at room temperature. The effect of the partial pressure of oxygen on the morphology of ZnO thin film structure and band alignment were investigated. Thickness, and therefore the growth rate of the samples measured from the cross-sectional SEM micrographs, is found to be strongly correlated with the oxygen partial pressure in the sputtering chamber. The optical transmittance spectrometry results show that the absorption edge shifts towards the longer wavelength at higher oxygen partial pressure. X-ray photoelectron spectroscopy (XPS) used for determining the surface chemical structure and valence band offsets show that conduction band can be controlled by changing the sputtering atmosphere.

  9. P-Cu2O/n-ZnO nanowires on ITO glass for solar cells.

    PubMed

    Zhang, Jin; Que, Wenxiu; Zhong, Peng; Zhu, Gangqiang

    2010-11-01

    In this paper, the fabrication and characterization of a heterojunction solar cell based on p-Cu2O/n-ZnO nanowires on ITO glass are presented. ZnO aligned nanocrystal seed layer is firstly prepared by RF magnetron sputtering technique, and then vertical ZnO nanowire arrays with an acicular crystal structure are obtained by using a chemical bath deposition processing. The results indicate that the ZnO nanowires with a diameter of about 50 nm and 500 nm in length can be easily obtained. The absorption and transmittance of the ZnO nanowires are studied. It is also noted that the Cu2O can fill well into the space between ZnO nanowires by an electrodeposition process. Furthermore, the effect of the Cu2O orientation on the cell performance is also presented.

  10. Alignment, rotation, and spinning of single plasmonic nanoparticles and nanowires using polarization dependent optical forces.

    PubMed

    Tong, Lianming; Miljković, Vladimir D; Käll, Mikael

    2010-01-01

    We demonstrate optical alignment and rotation of individual plasmonic nanostructures with lengths from tens of nanometers to several micrometers using a single beam of linearly polarized near-infrared laser light. Silver nanorods and dimers of gold nanoparticles align parallel to the laser polarization because of the high long-axis dipole polarizability. Silver nanowires, in contrast, spontaneously turn perpendicular to the incident polarization and predominantly attach at the wire ends, in agreement with electrodynamics simulations. Wires, rods, and dimers all rotate if the incident polarization is turned. In the case of nanowires, we demonstrate spinning at an angular frequency of approximately 1 Hz due to transfer of spin angular momentum from circularly polarized light.

  11. Digital selective growth of a ZnO nanowire array by large scale laser decomposition of zinc acetate.

    PubMed

    Hong, Sukjoon; Yeo, Junyeob; Manorotkul, Wanit; Kang, Hyun Wook; Lee, Jinhwan; Han, Seungyong; Rho, Yoonsoo; Suh, Young Duk; Sung, Hyung Jin; Ko, Seung Hwan

    2013-05-07

    We develop a digital direct writing method for ZnO NW micro-patterned growth on a large scale by selective laser decomposition of zinc acetate. For ZnO NW growth, by replacing the bulk heating with the scanning focused laser as a fully digital local heat source, zinc acetate crystallites can be selectively activated as a ZnO seed pattern to grow ZnO nanowires locally on a larger area. Together with the selective laser sintering process of metal nanoparticles, more than 10,000 UV sensors have been demonstrated on a 4 cm × 4 cm glass substrate to develop all-solution processible, all-laser mask-less digital fabrication of electronic devices including active layer and metal electrodes without any conventional vacuum deposition, photolithographic process, premade mask, high temperature and vacuum environment.

  12. Investigation of Co-Doped ZnO Nanowires by X-ray Absorption Spectroscopy and Ab Initio Simulation

    NASA Astrophysics Data System (ADS)

    Chu, Manh Hung; Nguyen, Van Duy; Nguyen, Duc Hoa; Nguyen, Van Hieu

    2017-01-01

    The local structure of single room- and high-temperature Co-implanted ZnO nanowires with subsequent thermal annealing has been studied using hard-x-ray techniques in combination with ab initio Zn K-edge x-ray absorption near-edge structure (XANES) simulations. X-ray fluorescence data reveal a homogeneous distribution of Co atoms/ions with concentration of about 0.1 at.% to 0.3 at.% in the nanowires. XANES data indicate substitutional incorporation of Co2+ ions at Zn sites in both types of nanowire. Improved structural order around Co atoms is obtained in nanowires with high-temperature ion implantation followed by thermal annealing. The ab initio Zn K-edge simulations not only confirm recovery of implantation-induced damage in the ZnO host lattice by the thermal annealing process, but also assist in studying the effect of oxygen vacancies in the Zn K-edge XANES spectra. Microphotoluminescence data certify that high-temperature ion implantation with subsequent thermal annealing is an effective approach to achieve the strongest optical activation of Co ions and good energy transfer to Co ions from the ZnO host matrix.

  13. Direct Writing of Patterned, Lead-Free Nanowire Aligned Flexible Piezoelectric Device.

    PubMed

    Gao, Meng; Li, Lihong; Li, Wenbo; Zhou, Haihua; Song, Yanlin

    2016-08-01

    A high-performance flexible piezoelectric nanogenerator (PNG) is fabricated by a direct writing method, which acquires both patterned piezoelectric structure and aligned piezoelectric nanowires simultaneously. The voltage output of the as-prepared PNG is nearly 400% compared with that of the traditional spin-coated device due to the effective utilization of stress. This facile printing approach provides an efficient strategy for significant improvement of the piezoresponse.

  14. Matrix replacement route to vertically aligned nickel nanowire array/polydimethylsiloxane nanocomposite film

    NASA Astrophysics Data System (ADS)

    Meng, Xin; Zhou, Liang-Tian; Zhu, Ji-Xiang; Song, Jie; Wang, Xuan-Rui; Qiao, Zheng-Ping

    2008-12-01

    Vertically aligned magnetic anisotropic nickel (Ni) nanowire (NW) array/polydimethylsiloxane (PDMS) film was prepared from (Ni NW array)/anodic aluminum oxide by a simple matrix replacement route. The main challenge is to preserve the parallelly aligned Ni NW during replacement. The diameter and thickness of the as-prepared Ni NW and the Ni NW array/PDMS film are 8 mm and 60 μm, respectively. The magnetic property measurement shows that the film has remarkably enhanced coercivity and remanence ratio compared to that of bulk nickel and exhibits perpendicular magnetic anisotropy.

  15. Raman silent modes in vertically aligned undoped ZnO nanorods

    NASA Astrophysics Data System (ADS)

    Sundara Venkatesh, P.; Ramakrishnan, V.; Jeganathan, K.

    2016-01-01

    We report the observation of Raman silent modes of B1low (276 cm-1) and B1high (582 cm-1) in vertically aligned ZnO nanorods due to the breakdown of translational symmetry. The structural studies reveal the high crystalline nature of the ZnO nanorods on the lattice mismatched silicon substrates. The dominant donor bound exciton emission and the phonon replicas signify the good quality of the nanorods which substantiate that the anomalous Raman modes could not be attributed to the intrinsic point defects. Further, our results show that the observed silent modes of wurtzite-ZnO become Raman active due to the breakdown of the wave-vector selection rule by loss of translational symmetry induced by nanorods geometry.

  16. In situ growth of a ZnO nanowire network within a TiO(2) nanoparticle film for enhanced dye-sensitized solar cell performance.

    PubMed

    Bai, Yang; Yu, Hua; Li, Zhen; Amal, Rose; Lu, Gao Qing Max; Wang, Lianzhou

    2012-11-14

    ZnO nanowire networks featuring excellent charge transport and light scattering properties are grown in situ within TiO(2) films. The resultant TiO(2) /ZnO composites, used as photoanodes, remarkably enhance the overall conversion efficiency of dye-sensitized solar cells (DSSCs) by 26.9%, compared to that of benchmark TiO(2) films.

  17. Hierarchical ZnO Nanowire Growth with Tunable Orientations on Versatile Substrates Using Atomic Layer Deposition Seeding

    SciTech Connect

    Bielinski, Ashley R.; Kazyak, Eric; Schleputz, Christian M.; Jung, Hee Joon; Wood, Kevin N.; Dasgupta, Neil P.

    2015-07-14

    The ability to synthesize semiconductor nanowires with deterministic and tunable control of orientation and morphology on a wide range of substrates, while high precision and repeatability are maintained, is a challenge currently faced for the development of many nanoscale material systems. Here we show that atomic layer deposition (ALD) presents a reliable method of surface and interfacial modification to guide nanowire orientation on a variety of substrate materials and geometries, including high-aspect-ratio, three-dimensional templates. We demonstrate control of the orientation and geometric properties of hydrothermally grown single crystalline ZnO nanowires via the deposition of a ZnO seed layer by ALD. The crystallographic texture and roughness of the seed layer result in tunable preferred nanowire orientations and densities for identical hydrothermal growth conditions. The structural and chemical relationship between the ALD layers and nanowires was investigated with synchrotron X-ray diffraction, high-resolution transmission electron microscopy, and X-ray photoelectron spectroscopy to elucidate the underlying mechanisms of orientation and morphology control. The resulting control parameters were utilized to produce hierarchical nanostructures with tunable properties on a wide range of substrates, including vertical micropillars, paper fibers, porous polymer membranes, and biological substrates. This illustrates the power of ALD for interfacial engineering of heterogeneous material systems at the nanoscale, to provide a highly controlled and scalable seeding method for bottom-up synthesis of integrated nanosystems.

  18. Probing the strain effect on near band edge emission of a curved ZnO nanowire via spatially resolved cathodoluminescence

    NASA Astrophysics Data System (ADS)

    Xue, Haizhou; Pan, Nan; Li, Ming; Wu, Yukun; Wang, Xiaoping; Hou, J. G.

    2010-05-01

    Curved ZnO nanowires were deliberately prepared on a Si substrate and the strain effect on their near band edge (NBE) emission was investigated by spatially resolved cathodoluminescence (CL). By moving the electron beam step-by-step across individual curved nanowires and acquiring the CL spectra simultaneously, we found that the NBE emissions from the inner region of the curved nanowires with compressive strain show blueshift, while those from the outer region with tensile strain show redshift. Both the strains have been estimated from the local curvature by a geometrical model and have been further examined by high-resolution transmission electron microscopy. A nearly linear relation between the strain and the peak energy shift in NBE emission was obtained. The result indicates that the optical band gap of ZnO nanowire is quite sensitive to and can be readily modulated by the induced strain via simply curving the nanowire, which has potential applications for designing new optical-electromechanical (OEM) and flexible optoelectronic nanodevices.

  19. Improved solar cell based on ZnO nanowires and CdSe quantum dots

    NASA Astrophysics Data System (ADS)

    Nadarajah, Athavan; Word, Robert C.; Konenkamp, Rolf

    2010-03-01

    We report a solar cell nanostructure that incorporates CdSe quantum dots embedded in a ZnO nanowire film and a hole-conducting polymer layer. This arrangement allows for enhanced light absorption and efficient collection of the carriers. Microscopic studies show the conversion of CdSe quantum dots into an inter-connected and continuous polycrystalline thin film upon annealing in cadmium chloride ambient. This structural change of the quantum dot layer destroys the quantum confinement and improves the charge transport in the layer significantly. It also provides for improved charge transfer to the adjacent contacting layers. The optimized solar cell exhibits an external quantum efficiency of 65 percent and an energy conversion efficiency above 2 percent.

  20. Plasma enhanced multistate storage capability of single ZnO nanowire based memory

    SciTech Connect

    Lai, Yunfeng Xin, Pucong; Cheng, Shuying; Yu, Jinling; Zheng, Qiao

    2015-01-19

    Multiple-state storage (MSS) is common for resistive random access memory, but the effects of plasma treatment on the MSS and the switching properties have been scarcely investigated. We have demonstrated a stable four-state storage capability of single zinc oxide nanowire (ZnO NW) treated by argon plasma. The electrical switching is attributed to the electron trapping and detrapping from the oxygen vacancies (V{sub o}s). The MSS relates to the electrical-thermal induced distribution of the V{sub o}s which determines electron transport behavior to show different resistance states. Additionally, programming (set and reset) voltages decrease with plasma treatment due to the thickness modulation of the interface barrier.

  1. Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires

    PubMed Central

    Sapkota, Keshab R.; Chen, Weimin; Maloney, F. Scott; Poudyal, Uma; Wang, Wenyong

    2016-01-01

    We report magnetoresistance (MR) manipulation and sign reversal induced by carrier concentration modulation in Mn-doped ZnO nanowires. At low temperatures positive magnetoresistance was initially observed. When the carrier concentration was increased through the application of a gate voltage, the magnetoresistance also increased and reached a maximum value. However, further increasing the carrier concentration caused the MR to decrease, and eventually an MR sign reversal from positive to negative was observed. An MR change from a maximum positive value of 25% to a minimum negative value of 7% was observed at 5 K and 50 KOe. The observed MR behavior was modeled by considering combined effects of quantum correction to carrier conductivity and bound magnetic polarons. This work could provide important insights into the mechanisms that govern magnetotransport in dilute magnetic oxides, and it also demonstrated an effective approach to manipulating magnetoresistance in these materials that have important spintronic applications. PMID:27739442

  2. Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires.

    PubMed

    Sapkota, Keshab R; Chen, Weimin; Maloney, F Scott; Poudyal, Uma; Wang, Wenyong

    2016-10-14

    We report magnetoresistance (MR) manipulation and sign reversal induced by carrier concentration modulation in Mn-doped ZnO nanowires. At low temperatures positive magnetoresistance was initially observed. When the carrier concentration was increased through the application of a gate voltage, the magnetoresistance also increased and reached a maximum value. However, further increasing the carrier concentration caused the MR to decrease, and eventually an MR sign reversal from positive to negative was observed. An MR change from a maximum positive value of 25% to a minimum negative value of 7% was observed at 5 K and 50 KOe. The observed MR behavior was modeled by considering combined effects of quantum correction to carrier conductivity and bound magnetic polarons. This work could provide important insights into the mechanisms that govern magnetotransport in dilute magnetic oxides, and it also demonstrated an effective approach to manipulating magnetoresistance in these materials that have important spintronic applications.

  3. Energy Level Alignment at Aqueous GaN and ZnO Interfaces

    NASA Astrophysics Data System (ADS)

    Hybertsen, Mark S.; Kharche, Neerav; Muckerman, James T.

    2014-03-01

    Electronic energy level alignment at semiconductor-electrolyte interfaces is fundamental to electrochemical activity. Motivated in particular by the search for new materials that can be more efficient for photocatalysis, we develop a first principles method to calculate this alignment at aqueous interfaces and demonstrate it for the specific case of non-polar GaN and ZnO interfaces with water. In the first step, density functional theory (DFT) based molecular dynamics is used to sample the physical interface structure and to evaluate the electrostatic potential step at the interface. In the second step, the GW approach is used to evaluate the reference electronic energy level separately in the bulk semiconductor (valence band edge energy) and in bulk water (the 1b1 energy level), relative to the internal electrostatic energy reference. Use of the GW approach naturally corrects for errors inherent in the use of Kohn-Sham energy eigenvalues to approximate the electronic excitation energies in each material. With this predicted interface alignment, specific redox levels in water, with potentials known relative to the 1b1 level, can then be compared to the semiconductor band edge positions. Our results will be discussed in the context of experiments in which photoexcited GaN and ZnO drive the hydrogen evolution reaction. Research carried out at Brookhaven National Laboratory under Contract No. DE-AC02-98CH10886 with the U.S. Department of Energy.

  4. Optical and Electrical Characteristics of Hybrid ZnO Nanowire/a-Si:H Solar Cells on Flexible Substrates under Mechanical Bending.

    PubMed

    Pathirane, Minoli K; Wong, William S

    2016-05-01

    Disordered 3-D hybrid ZnO nanowire/a-Si:H thin-film radial-junction solar cells are directly fabricated onto flexible substrates. A 41% reduction in optical reflectivity resulted in a 15% increase in the current density when the substrate is mechanically bent concave-up toward the incoming light. The light scattering of the nanowire devices was enhanced by decreasing the spacing between the nanowire solar cell by bending the substrate.

  5. Contact printing of horizontally-aligned p-type Zn₃P₂ nanowire arrays for rigid and flexible photodetectors.

    PubMed

    Yu, Gang; Liang, Bo; Huang, Hongtao; Chen, Gui; Liu, Zhe; Chen, Di; Shen, Guozhen

    2013-03-08

    Zn(3)P(2) is an important p-type semiconductor with the ability to detect almost all visible and ultraviolet light. By using the simple and efficient contact printing process, we reported the assembly of horizontally-aligned p-type Zn(3)P(2) nanowire arrays to be used as building blocks for high performance photodetectors. Horizontally-aligned Zn(3)P(2) nanowire arrays were first printed on silicon substrate to make thin-film transistors, exhibiting typical p-type transistor behavior with a high on/off ratio of 10(3). Besides, the Zn(3)P(2) nanowire array based devices showed a substantial response to illuminated lights with a wide range of wavelengths and densities. Flexible photodetectors were also fabricated by contact printing of horizontally-aligned Zn(3)P(2) nanowire arrays on flexible PET substrate, showing a comparable performance to the device on rigid silicon substrate.

  6. Quantitative and simultaneous analysis of the polarity of polycrystalline ZnO seed layers and related nanowires grown by wet chemical deposition

    NASA Astrophysics Data System (ADS)

    Guillemin, Sophie; Parize, Romain; Carabetta, Joseph; Cantelli, Valentina; Albertini, David; Gautier, Brice; Brémond, Georges; Fong, Dillon D.; Renevier, Hubert; Consonni, Vincent

    2017-03-01

    The polarity in ZnO nanowires is an important issue since it strongly affects surface configuration and reactivity, nucleation and growth, electro-optical properties, and nanoscale-engineering device performances. However, measuring statistically the polarity of ZnO nanowire arrays grown by chemical bath deposition and elucidating its correlation with the polarity of the underneath polycrystalline ZnO seed layer grown by the sol–gel process represents a major difficulty. To address that issue, we combine resonant x-ray diffraction (XRD) at Zn K-edge using synchrotron radiation with piezoelectric force microscopy and polarity-sensitive chemical etching to statistically investigate the polarity of more than 107 nano-objects both on the macroscopic and local microscopic scales, respectively. By using high temperature annealing under an argon atmosphere, it is shown that the compact, highly c-axis oriented ZnO seed layer is more than 92% Zn-polar and that only a few small O-polar ZnO grains with an amount less than 8% are formed. Correlatively, the resulting ZnO nanowires are also found to be Zn-polar, indicating that their polarity is transferred from the c-axis oriented ZnO grains acting as nucleation sites in the seed layer. These findings pave the way for the development of new strategies to form unipolar ZnO nanowire arrays as a requirement for a number of nanoscale-engineering devices like piezoelectric nanogenerators. They also highlight the great advantage of resonant XRD as a macroscopic, non-destructive method to simultaneously and statistically measure the polarity of ZnO nanowire arrays and of the underneath ZnO seed layer.

  7. Quantitative and simultaneous analysis of the polarity of polycrystalline ZnO seed layers and related nanowires grown by wet chemical deposition.

    PubMed

    Guillemin, Sophie; Parize, Romain; Carabetta, Joseph; Cantelli, Valentina; Albertini, David; Gautier, Brice; Brémond, Georges; Fong, Dillon D; Renevier, Hubert; Consonni, Vincent

    2017-03-03

    The polarity in ZnO nanowires is an important issue since it strongly affects surface configuration and reactivity, nucleation and growth, electro-optical properties, and nanoscale-engineering device performances. However, measuring statistically the polarity of ZnO nanowire arrays grown by chemical bath deposition and elucidating its correlation with the polarity of the underneath polycrystalline ZnO seed layer grown by the sol-gel process represents a major difficulty. To address that issue, we combine resonant x-ray diffraction (XRD) at Zn K-edge using synchrotron radiation with piezoelectric force microscopy and polarity-sensitive chemical etching to statistically investigate the polarity of more than 10(7) nano-objects both on the macroscopic and local microscopic scales, respectively. By using high temperature annealing under an argon atmosphere, it is shown that the compact, highly c-axis oriented ZnO seed layer is more than 92% Zn-polar and that only a few small O-polar ZnO grains with an amount less than 8% are formed. Correlatively, the resulting ZnO nanowires are also found to be Zn-polar, indicating that their polarity is transferred from the c-axis oriented ZnO grains acting as nucleation sites in the seed layer. These findings pave the way for the development of new strategies to form unipolar ZnO nanowire arrays as a requirement for a number of nanoscale-engineering devices like piezoelectric nanogenerators. They also highlight the great advantage of resonant XRD as a macroscopic, non-destructive method to simultaneously and statistically measure the polarity of ZnO nanowire arrays and of the underneath ZnO seed layer.

  8. ZnO nanowire arrays coating on TiO2 nanoparticles as a composite photoanode for a high efficiency DSSC.

    PubMed

    Wang, Meili; Wang, Yan; Li, Jingbo

    2011-10-28

    A novel composite photoanode with ZnO nanowire arrays coating on the top of TiO(2) nanoparticles is fabricated, and an efficiency of 4.52% is achieved for the composite cell, far higher than both 0.90% of the ZnO nanowire cell and 3.56% of the TiO(2) nanoparticle cell. The improved efficiency is resulted from the high surface area of nanoparticles, as well as fast electron transport and light scattering effect of nanowires.

  9. Electronic structures and optical properties of GaN and ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Akiyama, T.; Freeman, A. J.; Nakamura, K.; Ito, T.

    2007-03-01

    GaN and ZnO are promising semiconductor materials that exhibit many outstanding physical and chemical properties. Recently, their one-dimensional nanowires (NWs) are also attracting much interest due to their significant potential for optoelectronic nano-devices; they always take the wurtizte structure while other compound semiconductor NWs also exhibit other polytypes. However, little is known about their electronic and optical properties. Here we investigate the electronic structures and optical properties of GaN and ZnO [0001] NWs by using the highly precise full-potential linearized augmented plane wave (FLAPW) method. Our calculations demonstrate that the band gap energy of both the unpassivated and passivated NWs becomes large compared with the bulk energy gap due to quantum confinement effects; surface states crucially affect the electronic structure of unpassivated NWs. Further, we find peculiar features of their dielectric functions that exhibit strong anisotropy in the calculated optical properties. Work supported by the U.S. NSF (through its MRSEC Program at NU). Zhong et al., Nano Lett. 3, 343 (2003); Ng et al., APL 82, 2023 (2003); Akiyama et al., JJAP 45, L275 (2006); PRB 73, 235308 (2006). Wimmer, Krakauer, Weinert, Freeman, PRB 24, 864 (1981).

  10. Effects of Ni-coating on ZnO nanowires: A Raman scattering study

    NASA Astrophysics Data System (ADS)

    Filippov, S.; Wang, X. J.; Devika, M.; Koteeswara Reddy, N.; Tu, C. W.; Chen, W. M.; Buyanova, I. A.

    2013-06-01

    Structural properties of ZnO/Ni core/shell nanowires (NWs) are studied in detail by means of Raman spectroscopy. It is shown that formation of the Ni shell leads to passivation of surface states responsible for the observed enhanced intensity of the A1(LO) Raman mode of the bare ZnO NWs. It also causes appearance of 490 cm-1 and 710 cm-1 modes that are attributed to local vibrational modes of a defect/impurity (or defects/impurities). This defect is concluded to be preferably formed in annealed ZnO/Ni NWs and is unlikely to contain a Ni atom, as the same Raman modes were also reported for the Ni-free ZnO nanostructures. From our resonant Raman studies, we also show that the ZnO/Ni core/shell NWs exhibit an enhanced Raman signal with a multiline structure involving A1(LO). This observation is attributed to combined effects of an enhanced Fröhlich interaction at the ZnO/Ni heterointerface and coupling of the scattered light with local surface plasmons excited in the Ni shell. The plasmonic effect is also suggested to allow detection of carbon-related species absorbed at the surface of a single ZnO/Ni NW, promising for applications of such structures as efficient nano-sized gas sensors.

  11. Investigation of novel heterojunction: P-type SnS coated n-type ZnO nanowire

    NASA Astrophysics Data System (ADS)

    Bu, Ian Y. Y.

    2015-12-01

    SnS coated ZnO nanowires heterojunctional solar cells were fabricated using a combination of hydrothermal synthesis and chemical bath deposition (CBD) method. The synthesized materials and devices were characterized using scanning electron microscopy (SEM), X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), photoluminescence emission spectroscopy, Uv-Vis spectroscopy and electrical measurements. SEM imaging of the sample revealed that the CBD SnS coating bunches the underlying ZnO nanowires due to the large capillary force it experiences during the drying process. Both of the EDS and XRD measurements confirm the presence of SnS and SnO2. Optoelectronic measurement confirms that the fabricated device exhibit high absorbance (∼80%) and exhibit photovoltaic behaviour.

  12. Gate modulation of below-band-gap photoconductivity in ZnO nanowire field-effect-transistors

    NASA Astrophysics Data System (ADS)

    Cammi, Davide; Röder, Robert; Ronning, Carsten

    2014-10-01

    We investigated the modulation of the photoconductivity under below-band gap excitation in single ZnO nanowire field effect transistors. Light excitation at 550 nm does not induce any change in the drain-source current when the gate voltage is kept at Vgs = 0 V, but results in a current increase when it is set to Vgs = -50 V. At this negative value of the gate voltage we further investigated the photo-reaction in the below-band-gap range 400-800 nm, observing a qualitative similar profile for all the photo-current curves. These results were attributed to a local effect, suggesting that the change in conductivity is due to the release of electrons from interface states located between the ZnO nanowire active channel and the gate dielectric SiO2.

  13. Factors that determine and limit the resistivity of high-quality individual ZnO nanowires.

    PubMed

    Lord, Alex M; Maffeis, Thierry G; Walton, Alex S; Kepaptsoglou, Despoina M; Ramasse, Quentin M; Ward, Michael B; Köble, Jürgen; Wilks, Steve P

    2013-11-01

    Knowing and controlling the resistivity of an individual nanowire (NW) is crucial for the production of new sensors and devices. For ZnO NWs this is poorly understood; a 10(8) variation in resistivity has previously been reported, making the production of reproducible devices almost impossible. Here, we provide accurate resistivity measurements of individual NWs, using a four-probe scanning tunnelling microscope (STM), revealing a dependence on the NW dimensions. To correctly interpret this behaviour, an atomic level transmission electron microscopy technique was employed to study the structural properties of the NWs in relation to three growth techniques: hydrothermal, catalytic and non-catalytic vapour phase. All NWs were found to be defect free and structurally equivalent; those grown with a metallic catalyst were free from Au contamination. The resistivity measurements showed a distinct increase with decreasing NW diameter, independent of growth technique. The increasing resistivity at small NW diameters was attributed to the dominance of surface states removing electrons from the bulk. However, a fundamental variance in resistivity (10(2)) was observed and attributed to changes in occupied surface state density, an effect which is not seen with other NW materials such as Si. This is examined by a model to predict the effect of surface state occupancy on the measured resistivity and is confirmed with measurements after passivating the ZnO surface. Our results provide an understanding of the primary influence of the reactive nature of the surface and its dramatic effect on the electrical properties of ZnO NWs.

  14. Photovoltaic performance of Gallium-doped ZnO thin film/Si nanowires heterojunction diodes

    NASA Astrophysics Data System (ADS)

    Akgul, Guvenc; Aksoy Akgul, Funda; Emrah Unalan, Husnu; Turan, Rasit

    2016-04-01

    In this work, photovoltaic performance of Ga-doped ZnO thin film/Si NWs heterojunction diodes was investigated. Highly dense and vertically well-aligned Si NW arrays were successfully synthesised on a p-type (1 0 0)-oriented Si wafer through cost-effective metal-assisted chemical etching technique. Ga-doped ZnO thin films were deposited onto Si NWs via radio frequency magnetron sputtering to construct three-dimensional heterostructures. Photovoltaic characteristics of the fabricated diodes were determined with current density (J)-voltage (V) measurements under simulated solar irradiation of AM 1.5 G. The optimal open-circuit voltage, short-circuit current density, fill factor and power conversion efficiency were found to be 0.37 V, 3.30 mA cm-2, 39.00 and 0.62%, respectively. Moreover, photovoltaic diodes exhibited relatively high external quantum efficiency over the broadband wavelengths between 350 and 1100 nm interval of the spectrum. The observed photovoltaic performance in this study clearly indicates that the investigated device structure composed of Ga-doped ZnO thin film/Si NWs heterojunctions could facilitate an alternative pathway for optoelectronic applications in future, and be a promising alternative candidate for high-performance low-cost new-generation photovoltaic diodes.

  15. Electrical characteristics and rectification performance of wet chemically synthesized vertically aligned n-ZnO nanowire/p-Si heterojunction

    NASA Astrophysics Data System (ADS)

    Gayen, R. N.; Bhattacharyya, S. R.

    2016-03-01

    Vertically well-aligned n-ZnO nanowire (NW) thin films were deposited onto p-Si substrates by a two-step wet chemical technique to form a p-n heterojunction diode. The morphological and structural characteristics of the ZnO NW performed by scanning electron microscopy (SEM) and x-ray diffraction (XRD) revealed well-aligned h-ZnO NW with a wurtzite structure. A direct optical band gap of 3.30 eV was calculated from the transmittance trace obtained using a UV-VIS-NIR spectrophotometer. The electrical characteristics of the heterojunction diode were studied by capacitance-voltage (C-V) measurement at room temperature, and current-voltage-temperature (I-V-T) measurements performed in the 300-400 K range. The C-V measurements yield a carrier concentration of 1.3  ×  1016 c.c.-1 for the ZnO NW thin film. The ideality factor (n) was found to decrease, while the barrier height (φ b0) increased with the increase in temperature, when calculated using a thermionic emission model from the non-linear I-V-T plots. The series resistance (R s) calculated by the Cheung-Cheung method decreased with the increase in temperature. The mean barrier height (0.718 eV) and modified Richardson constant (28.4 A cm-2 K-2) calculated using a Gaussian distribution of barrier heights (considering barrier height inhomogeneity) were closer to the theoretical value than those calculated from the linear approximation of the ln(I s/T 2) versus 1000/T plot. The variation of the density of interface states with interface state energy was also studied. The n-ZnO NW/p-Si heterojunction diode performed very good half wave rectification in the frequency range 50 Hz-10 kHz, when a sinusoidal ac voltage of amplitude 4.5 V was applied across it.

  16. High carrier concentration ZnO nanowire arrays for binder-free conductive support of supercapacitors electrodes by Al doping.

    PubMed

    Zheng, Xin; Sun, Yihui; Yan, Xiaoqin; Sun, Xu; Zhang, Guangjie; Zhang, Qian; Jiang, Yaru; Gao, Wenchao; Zhang, Yue

    2016-12-15

    Doping semiconductor nanowires (NWs) for altering their electrical and optical properties is a critical strategy for tailoring the performance of nanodevices. Here, we prepared in situ Al-doped ZnO nanowire arrays by using continuous flow injection (CFI) hydrothermal method to promote the conductivity. This reasonable method offers highly stable precursor concentration for doping that effectively avoid the appearance of the low conductivity ZnO nanosheets. Benefit from this, three orders of magnitude rise of the carrier concentration from 10(16)cm(-3) to 10(19)cm(-3) can be achieved compared with the common hydrothermal (CH) mothed in Mott-Schottky measurement. Possible effect of Al-doping was discussed by first-principle theory. On this basis, Al-doped ZnO nanowire arrays was developed as a binder-free conductive support for supercapacitor electrodes and high capacitance was triggered. It is owing to the dramatically decreased transfer resistance induced by the growing free-moving electrons and holes. Our results have a profound significance not merely in the controlled synthesis of other doping nanomaterials by co-precipitation method but also in the application of binder-free energy materials or other materials.

  17. Gate-Tunable Spin Exchange Interactions and Inversion of Magnetoresistance in Single Ferromagnetic ZnO Nanowires.

    PubMed

    Modepalli, Vijayakumar; Jin, Mi-Jin; Park, Jungmin; Jo, Junhyeon; Kim, Ji-Hyun; Baik, Jeong Min; Seo, Changwon; Kim, Jeongyong; Yoo, Jung-Woo

    2016-04-26

    Electrical control of ferromagnetism in semiconductor nanostructures offers the promise of nonvolatile functionality in future semiconductor spintronics. Here, we demonstrate a dramatic gate-induced change of ferromagnetism in ZnO nanowire (NW) field-effect transistors (FETs). Ferromagnetism in our ZnO NWs arose from oxygen vacancies, which constitute deep levels hosting unpaired electron spins. The magnetic transition temperature of the studied ZnO NWs was estimated to be well above room temperature. The in situ UV confocal photoluminescence (PL) study confirmed oxygen vacancy mediated ferromagnetism in the studied ZnO NW FET devices. Both the estimated carrier concentration and temperature-dependent conductivity reveal the studied ZnO NWs are at the crossover of the metal-insulator transition. In particular, gate-induced modulation of the carrier concentration in the ZnO NW FET significantly alters carrier-mediated exchange interactions, which causes even inversion of magnetoresistance (MR) from negative to positive values. Upon sweeping the gate bias from -40 to +50 V, the MRs estimated at 2 K and 2 T were changed from -11.3% to +4.1%. Detailed analysis on the gate-dependent MR behavior clearly showed enhanced spin splitting energy with increasing carrier concentration. Gate-voltage-dependent PL spectra of an individual NW device confirmed the localization of oxygen vacancy-induced spins, indicating that gate-tunable indirect exchange coupling between localized magnetic moments played an important role in the remarkable change of the MR.

  18. Epitaxial growth of ZnO Nanodisks with large exposed polar facets on nanowire arrays for promoting photoelectrochemical water splitting.

    PubMed

    Chen, Haining; Wei, Zhanhua; Yan, Keyou; Bai, Yang; Zhu, Zonglong; Zhang, Teng; Yang, Shihe

    2014-11-01

    Single-crystalline and branched 1D arrays, ZnO nanowires/nanodisks (NWs/NDs) arrays, are fabricated to significantly enhance the performance of photoelectrochemical (PEC) water splitting. The epitaxial growth of the ZnO NDs with large exposed polar facets on ZnO NWs exhibits a laminated structure, which dramatically increases the light scattering capacity of the NWs arrays, especially in the wavelength region around 400 nm. The ND branching of the 1D arrays in the epitaxial fashion not only increase surface area and light utilization, but also support fast charge transport, leading to the considerable increase of photocurrent. Moreover, the tiny size NDs can facilitate charge separation and reduce charge recombination, while the large exposed polar facets of NDs reduce the external potential bias needed for water splitting. These advantages land the ZnO NWs/NDs arrays a four times higher power conversion efficiency than the ZnO NWs arrays. By sensitizing the ZnO NWs/NDs with CdS and CdSe quantum dots, the PEC performance can be further improved. This work advocates a trunk/leaf in forest concept for the single-crystalline NWs/NDs in array with enlarged exposure of polar facets, which opens the way for optimizing light harvesting and charge separation and transport, and thus the PEC water splitting.

  19. Fe solubility, growth mechanism, and luminescence of Fe doped ZnO nanowires and nanorods grown by evaporation-deposition

    NASA Astrophysics Data System (ADS)

    Alemán, Belén; Ortega, Yanicet; García, José Ángel; Fernández, Paloma; Piqueras, Javier

    2011-07-01

    Fe doped ZnO nanowires, nanorods, and urchin-like nanostructures have been grown using an evaporation-deposition method with compacted mixtures of ZnS and Fe2O3 powders, with different Fe contents as precursors. Treatments at 950 °C under argon flow lead to the growth of iron doped nanowires, nanorods, and other nanostructures on the surface of the compacted sample. The incorporation of iron into the nanostructures has been investigated via energy dispersive spectroscopy as well as by cathodoluminescence in a scanning electron microscope and photoluminescence in an optical microscope. The iron content in the structures is limited to the range of 0.5-0.7 at.% and does not depend on the content in the precursor. Bright and dark field imaging and twist contour analysis via transmission electron microscopy support the possibility of a dislocation driven growth of the nanowires.

  20. Enhanced non-volatile resistive switching in suspended single-crystalline ZnO nanowire with controllable multiple states

    NASA Astrophysics Data System (ADS)

    Zhang, Rui; Pang, Wei; Zhang, Qing; Chen, Yan; Chen, Xuejiao; Feng, Zhihong; Yang, Jianhua; Zhang, Daihua

    2016-08-01

    Resistive switching nanostructures are a promising candidate for next-generation non-volatile memories. In this report, we investigate the switching behaviors of single-crystalline ZnO nanowires suspended in air. They exhibit significantly higher current density, lower switching voltage, and more pronounced multiple conductance states compared to nanowires in direct contact with substrate. We attribute the effect to enhanced Joule heating efficiency, reduced surface scattering, and more significantly, the positive feedback established between the current density and local temperature in the suspended nanowires. The proposed mechanism has been quantitatively examined by finite element simulations. We have also demonstrated an innovative approach to initiating the current-temperature mutual enhancement through illumination by ultraviolet light, which further confirmed our hypothesis and enabled even greater enhancement. Our work provides further insight into the resistive switching mechanism of single-crystalline one-dimensional nanostructures, and suggests an effective means of performance enhancement and device optimization.

  1. Enhanced non-volatile resistive switching in suspended single-crystalline ZnO nanowire with controllable multiple states.

    PubMed

    Zhang, Rui; Pang, Wei; Zhang, Qing; Chen, Yan; Chen, Xuejiao; Feng, Zhihong; Yang, Jianhua; Zhang, Daihua

    2016-06-27

    Resistive switching nanostructures are a promising candidate for next-generation non-volatile memories. In this report, we investigate the switching behaviors of single-crystalline ZnO nanowires suspended in air. They exhibit significantly higher current density, lower switching voltage, and more pronounced multiple conductance states compared to nanowires in direct contact with substrate. We attribute the effect to enhanced Joule heating efficiency, reduced surface scattering, and more significantly, the positive feedback established between the current density and local temperature in the suspended nanowires. The proposed mechanism has been quantitatively examined by finite element simulations. We have also demonstrated an innovative approach to initiating the current-temperature mutual enhancement through illumination by ultraviolet light, which further confirmed our hypothesis and enabled even greater enhancement. Our work provides further insight into the resistive switching mechanism of single-crystalline one-dimensional nanostructures, and suggests an effective means of performance enhancement and device optimization.

  2. In situ TEM and energy dispersion spectrometer analysis of chemical composition change in ZnO nanowire resistive memories.

    PubMed

    Huang, Yu-Ting; Yu, Shih-Ying; Hsin, Cheng-Lun; Huang, Chun-Wei; Kang, Chen-Fang; Chu, Fu-Hsuan; Chen, Jui-Yuan; Hu, Jung-Chih; Chen, Lien-Tai; He, Jr-Hau; Wu, Wen-Wei

    2013-04-16

    Resistive random-access memory (ReRAM) has been of wide interest for its potential to replace flash memory in the next-generation nonvolatile memory roadmap. In this study, we have fabricated the Au/ZnO-nanowire/Au nanomemory device by electron beam lithography and, subsequently, utilized in situ transmission electron microscopy (TEM) to observe the atomic structure evolution from the initial state to the low-resistance state (LRS) in the ZnO nanowire. The element mapping of LRS showing that the nanowire was zinc dominant indicating that the oxygen vacancies were introduced after resistance switching. The results provided direct evidence, suggesting that the resistance change resulted from oxygen migration.

  3. Patterned growth of ZnO nanowires on flexible substrates for enhanced performance of flexible piezoelectric nanogenerators

    NASA Astrophysics Data System (ADS)

    Yang, Dechao; Qiu, Yu; Jiang, Qingyu; Guo, Zhaoshuai; Song, Wenbin; Xu, Jin; Zong, Yang; Feng, Qiuxia; Sun, Xiaoling

    2017-02-01

    Flexible piezoelectric nanogenerators (NGs) based on patterned growth of ZnO nanowires (PNWs) by the hydrothermal method are proposed for high-efficiency energy harvesting applications. The use of the PNWs in ZnO-based FPNGs results in a significant improvement in terms of the magnitude of the output currents of up to 6 times when compared with pristine ZnO NW-based FPNGs without patterned growth mode. The maximum output current was measured to be about 150 nA, which was enough to drive some micro/nanoelectronic devices. The improved output performance is mainly attributed to the patterned growth mode in FPNGs, which may significantly reduce the piezoelectric potential screening effect caused by free electrons in ZnO. This strategy may provide a highly promising platform as energy harvesting devices for viable industrial applications in portable/wearable nanodevices.

  4. Passivation of surface states in the ZnO nanowire with thermally evaporated copper phthalocyanine for hybrid photodetectors.

    PubMed

    Chen, Qi; Ding, Huaiyi; Wu, Yukun; Sui, Mengqiao; Lu, Wei; Wang, Bing; Su, Wenming; Cui, Zheng; Chen, Liwei

    2013-05-21

    The adsorption of O2/H2O molecules on the ZnO nanowire (NW) surface results in the long lifetime of photo-generated carriers and thus benefits ZnO NW-based ultraviolet photodetectors by suppressing the dark current and improving the photocurrent gain, but the slow adsorption process also leads to slow detector response time. Here we show that a thermally evaporated copper phthalocyanine film is effective in passivating surface trap states of ZnO NWs. As a result, the organic/inorganic hybrid photodetector devices exhibit simultaneously improved photosensitivity and response time. This work suggests that it could be an effective way in interfacial passivation using organic/inorganic hybrid structures.

  5. Epitaxially aligned cuprous oxide nanowires for all-oxide, single-wire solar cells.

    PubMed

    Brittman, Sarah; Yoo, Youngdong; Dasgupta, Neil P; Kim, Si-in; Kim, Bongsoo; Yang, Peidong

    2014-08-13

    As a p-type semiconducting oxide that can absorb visible light, cuprous oxide (Cu2O) is an attractive material for solar energy conversion. This work introduces a high-temperature, vapor-phase synthesis that produces faceted Cu2O nanowires that grow epitaxially along the surface of a lattice-matched, single-crystal MgO substrate. Individual wires were then fabricated into single-wire, all-oxide diodes and solar cells using low-temperature atomic layer deposition (ALD) of TiO2 and ZnO films to form the heterojunction. The performance of devices made from pristine Cu2O wires and chlorine-exposed Cu2O wires was investigated under one-sun and laser illumination. These faceted wires allow the fabrication of well-controlled heterojunctions that can be used to investigate the interfacial properties of all-oxide solar cells.

  6. Fabrication of high performance field-effect transistors and practical Schottky contacts using hydrothermal ZnO nanowires.

    PubMed

    Opoku, Charles; Dahiya, Abhishek Singh; Oshman, Christopher; Daumont, Christophe; Cayrel, Frederic; Poulin-Vittrant, Guylaine; Alquier, Daniel; Camara, Nicolas

    2015-09-04

    The production of large quantities of single crystalline semiconducting ZnO nanowires (NWs) at low cost can offer practical solutions to realizing several novel electronic/optoelectronic and sensor applications on an industrial scale. The present work demonstrates high-density single crystalline NWs synthesized by a multiple cycle hydrothermal process at ∼100 °C. The high carrier concentration in such ZnO NWs is greatly suppressed by a simple low cost thermal annealing step in ambient air at ∼450 °C. Single ZnO NW FETs incorporating these modified NWs are characterized, revealing strong metal work function-dependent charge transport, unobtainable with as-grown hydrothermal ZnO NWs. Single ZnO NW FETs with Al as source and drain (s/d) contacts show excellent performance metrics, including low off-state currents (fA range), high on/off ratio (10(5)-10(7)), steep subthreshold slope (<600 mV/dec) and excellent field-effect carrier mobility (5-11 cm(2)/V-s). Modified ZnO NWs with platinum s/d contacts demonstrate excellent Schottky transport characteristics, markedly different from a reference ZnO NW device with Al contacts. This included abrupt reverse bias current-voltage saturation characteristics and positive temperature coefficient (∼0.18 eV to 0.13 eV). This work is envisaged to benefit many areas of hydrothermal ZnO NW research, such as NW FETs, piezoelectric energy recovery, piezotronics and Schottky diodes.

  7. In situ fabrication of inorganic nanowire arrays grown from and aligned on metal substrates.

    PubMed

    Zhang, Weixin; Yang, Shihe

    2009-10-20

    The full potential of nanotechnology can be unleashed only when one is able not only to synthesize a rich variety of nanoscale building blocks but also assemble them into various patterns at the supramolecular and supracluster levels. In particular, the application of nanoparticle and nanowire materials often requires their assembly in the form of thin films, preferably on conductive surfaces for electrical addressing, control, and detection. Although a dazzling array of nanostructures has been fabricated by bottom-up approaches, one of the contemporary challenges is to assemble these nanostructures so that they introduce and realize functionalities. An alluring avenue is to simultaneously accomplish both the nanostructure synthesis and assembly on a useful substrate in a parallel fashion, affording the advantages of simplicity, low cost, and high throughput. In this Account, we review our recent work on growing inorganic nanowires (for example, metal sulfides, metal oxides, and so forth) directly from and on metal substrates in arrays without using templates and catalysts. This method of engineering nanowire arrays on metal substrates integrates the nanowire synthesis and assembly into a parallel process, both in time and in space, by exploiting in situ chemistry on the metal substrates. Both gas-phase and solution-phase approaches have been developed to synthesize the aligned nanowires; here, full advantage is taken of interfacial kinetics of restricted diffusion and surface-specific reactions, often accompanied by new interfacial growth mechanisms. The setting of nanowire arrays on metal substrates has allowed exploration of their application potentials in areas such as field electron emission and chemical sensing. The approaches described here are general, and we predict that they will be extended to more inorganic materials, such as metal halides. Moreover, as more control is achieved with synthetic methods, inorganic nanowire arrays should provide unusual

  8. Effect of surface energy and seed layer annealing temperature on ZnO seed layer formation and ZnO nanowire growth

    NASA Astrophysics Data System (ADS)

    Park, Ji-Sub; Mahmud, Imtiaz; Shin, Han Jae; Park, Min-Kyu; Ranjkesh, Amid; Lee, Do Kyung; Kim, Hak-Rin

    2016-01-01

    We discuss the effects of surface energy and seed layer annealing temperature (Tannealing) on seed layer growth and hydrothermally-grown zinc oxide (ZnO) nanowires (NWs). In this work, by varying the ultraviolet ozone (UVO) treatment times on a silicon surface, the surface energy conditions for the seed layer formation changed and the seed layer was annealed under different Tannealing conditions. Under a lower surface energy condition of the substrate, with increasing Tannealing, the coverage density and the average thickness of the seed layer increased, but island-like growth was observed. This case was inevitably accompanied by an increase in surface roughness, which resulted in agglomerated low density growth of ZnO NWs. After sufficient UVO treatment, hydroxyl groups on the silicon surface activated the ZnO seed layer formation in the chemical reaction and increased the bonding energy between the active nucleation sites of the seed layer and the substrate surface. This ensured higher coverage density of the seed layer with lower surface roughness under the same Tannealing condition, thereby providing the ZnO NW growth with an enhanced density and aspect ratio as well as good crystallinity.

  9. Vapor detection performance of vertically aligned, ordered arrays of silicon nanowires with a porous electrode.

    PubMed

    Field, Christopher R; In, Hyun Jin; Begue, Nathan J; Pehrsson, Pehr E

    2011-06-15

    Vertically aligned, ordered arrays of silicon nanowires capped with a porous top electrode are used to detect gas phase ammonia and nitrogen dioxide in humidified air. The sensors had very fast response times and large signal-to-noise ratios. Calibration curves were created using both an initial slope method and a fixed-time point method. The initial-slope method had a power law dependence that correlates well with concentration, demonstrating a viable alternative for eventual quantitative vapor detection and enabling shorter sampling and regeneration times.

  10. Highly polarized light emission by isotropic quantum dots integrated with magnetically aligned segmented nanowires

    SciTech Connect

    Uran, Can; Erdem, Talha; Guzelturk, Burak; Perkgöz, Nihan Kosku; Jun, Shinae; Jang, Eunjoo; Demir, Hilmi Volkan

    2014-10-06

    In this work, we demonstrate a proof-of-concept system for generating highly polarized light from colloidal quantum dots (QDs) coupled with magnetically aligned segmented Au/Ni/Au nanowires (NWs). Optical characterizations reveal that the optimized QD-NW coupled structures emit highly polarized light with an s-to p-polarization (s/p) contrast as high as 15:1 corresponding to a degree of polarization of 0.88. These experimental results are supported by the finite-difference time-domain simulations, which demonstrate the interplay between the inter-NW distance and the degree of polarization.

  11. High speed graphene transistors with a self-aligned nanowire gate

    PubMed Central

    Liao, Lei; Lin, Yung-Chen; Bao, Mingqiang; Cheng, Rui; Bai, Jingwei; Liu, Yuan; Qu, Yongquan; Wang, Kang L.; Huang, Yu; Duan, Xiangfeng

    2010-01-01

    Graphene has attracted considerable interest as a potential new electronic material1–11. With the highest carrier mobility exceeding 200,000 cm2/V·s, graphene is of particular interest for ultra-high speed radio frequency (RF) electronics12–18. However, the conventional dielectric integration and device fabrication processes cannot be readily applied to fabricate high speed graphene transistors because they can often introduce significant defects into the monolayer of carbon lattices and severely degrade the device performance19–21. Here we report a new approach to fabricate high-speed graphene transistors with a self-aligned nanowire gate to enable unprecedented performance. The graphene transistors are fabricated using a Co2Si/Al2O3 core/shell nanowire as the gate, with the source and drain electrodes defined through a self-alignment process and the channel length defined by the nanowire diameter. The physical assembly of nanowire gate preserves the high carrier mobility in graphene, and the self-aligned process ensures that the edges of the source, drain, and gate electrodes are automatically and precisely positioned so that no overlapping or significant gaps exist between these electrodes and thus minimizes access resistance. It therefore enables transistor performance not previously possible. Graphene transistors with channel length down to 140 nm have been fabricated with the highest scaled on-current (3.32 mA μm−1) and transconductance (1.27 mS μm−1) reported to date. Significantly, on-chip microwave measurements demonstrate that the self-aligned devices exhibit a record high intrinsic cutoff frequency (fT) in the range of 100–300 GHz, with the extrinsic fT in the range of a few gigahertz largely limited by parasitic pad capacitance. The reported intrinsic cutoff frequency of the graphene transistors is comparable to that of the very best high electron mobility transistors with similar gate lengths10. It therefore marks an important milestone

  12. Alignment of nanoparticles, nanorods, and nanowires during chemical vapor deposition of silicon

    NASA Astrophysics Data System (ADS)

    Swain, Bhabani Sankar; Park, Jin-Woo; Yang, Seung-Min; Mahmood, Khalid; Swain, Bibhu Prasad; Lee, Jae-Gab; Hwang, Nong-Moon

    2015-09-01

    We fabricated silicon nanostructures (Si-NSs) on SiO x /Si substrate in chemical vapor deposition. During the synthesis of Si-NSs, Si sunflower-shaped structures of one to hundred microns were observed, therein the nanoparticles (NPs), nanowires, and nanorods were aligned in an ordered manner. We suggest that the NSs reported here are evolved by the electrostatic force exerted by charged NPs in gas phase. This NS would help in understanding the role of spontaneous charging of NPs in the gas phase and the role of charged NPs in the gas phase for NSs growth.

  13. Optimizing the Field Emission Properties of ZnO Nanowire Arrays by Precisely Tuning the Population Density and Application in Large-Area Gated Field Emitter Arrays.

    PubMed

    Li, Yufeng; Zhang, Zhipeng; Zhang, Guofu; Zhao, Long; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun

    2017-02-01

    Zinc oxide (ZnO) nanowires are prepared for application in large area gated field emitter arrays (FEAs). By oxidizing Al-coated Zn films, the population density of the ZnO nanowires was tuned precisely by varying the thickness of the Al film. The nanowire density decreased linearly as the thickness of the Al film increased. Optimal field emission properties with a turn-on field of 6.21 V μm(-1) and current fluctuations less than 1% are obtained. This can be explained by the minimized screening effect and good electrical conductivity of the back-contact layer. The mechanism responsible for the linear variation in the nanowire density is investigated in detail. Addressable FEAs using the optimal ZnO nanowire cathodes were fabricated and applied in a display device. Good gate-controlled characteristics and the display of video images are realized. The results indicate that ZnO nanowires could be applied in large area FEAs.

  14. Phonon processes in vertically aligned silicon nanowire arrays produced by low-cost all-solution galvanic displacement method

    NASA Astrophysics Data System (ADS)

    Banerjee, Debika; Trudeau, Charles; Gerlein, Luis Felipe; Cloutier, Sylvain G.

    2016-03-01

    The nanoscale engineering of silicon can significantly change its bulk optoelectronic properties to make it more favorable for device integration. Phonon process engineering is one way to enhance inter-band transitions in silicon's indirect band structure alignment. This paper demonstrates phonon localization at the tip of silicon nanowires fabricated by galvanic displacement using wet electroless chemical etching of a bulk silicon wafer. High-resolution Raman micro-spectroscopy reveals that such arrayed structures of silicon nanowires display phonon localization behaviors, which could help their integration into the future generations of nano-engineered silicon nanowire-based devices such as photodetectors and solar cells.

  15. Novel synthetic methodology for controlling the orientation of zinc oxide nanowires grown on silicon oxide substrates

    NASA Astrophysics Data System (ADS)

    Cho, Jinhyun; Salleh, Najah; Blanco, Carlos; Yang, Sungwoo; Lee, Chul-Jin; Kim, Young-Woo; Kim, Jungsang; Liu, Jie

    2014-03-01

    This study presents a simple method to reproducibly obtain well-aligned vertical ZnO nanowire arrays on silicon oxide (SiOx) substrates using seed crystals made from a mixture of ammonium hydroxide (NH4OH) and zinc acetate (Zn(O2CCH3)2) solution. In comparison, high levels of OH- concentration obtained using NaOH or KOH solutions lead to incorporation of Na or K atoms into the seed crystals, destroying the c-axis alignment of the seeds and resulting in the growth of misaligned nanowires. The use of NH4OH eliminates the metallic impurities and ensures aligned nanowire growth in a wide range of OH- concentrations in the seed solution. The difference of crystalline orientations between NH4OH- and NaOH-based seeds is directly observed by lattice-resolved images and electron diffraction patterns using a transmission electron microscope (TEM). This study obviously suggests that metallic impurities incorporated into the ZnO nanocrystal seeds are one of the factors that generates the misaligned ZnO nanowires. This method also enables the use of silicon oxide substrates for the growth of vertically aligned nanowires, making ZnO nanostructures compatible with widely used silicon fabrication technology.This study presents a simple method to reproducibly obtain well-aligned vertical ZnO nanowire arrays on silicon oxide (SiOx) substrates using seed crystals made from a mixture of ammonium hydroxide (NH4OH) and zinc acetate (Zn(O2CCH3)2) solution. In comparison, high levels of OH- concentration obtained using NaOH or KOH solutions lead to incorporation of Na or K atoms into the seed crystals, destroying the c-axis alignment of the seeds and resulting in the growth of misaligned nanowires. The use of NH4OH eliminates the metallic impurities and ensures aligned nanowire growth in a wide range of OH- concentrations in the seed solution. The difference of crystalline orientations between NH4OH- and NaOH-based seeds is directly observed by lattice-resolved images and electron

  16. Nucleation, Growth Mechanism, and Controlled Coating of ZnO ALD onto Vertically Aligned N-Doped CNTs.

    PubMed

    Silva, R M; Ferro, M C; Araujo, J R; Achete, C A; Clavel, G; Silva, R F; Pinna, N

    2016-07-19

    Zinc oxide thin films were deposited on vertically aligned nitrogen-doped carbon nanotubes (N-CNTs) by atomic layer deposition (ALD) from diethylzinc and water. The study demonstrates that doping CNTs with nitrogen is an effective approach for the "activation" of the CNTs surface for the ALD of metal oxides. Conformal ZnO coatings are already obtained after 50 ALD cycles, whereas at lower ALD cycles an island growth mode is observed. Moreover, the process allows for a uniform growth from the top to the bottom of the vertically aligned N-CNT arrays. X-ray photoelectron spectroscopy demonstrates that ZnO nucleation takes place at the N-containing species on the surface of the CNTs by the formation of the Zn-N bonds at the interface between the CNTs and the ZnO film.

  17. Self-aligned nanocrystalline ZnO hexagons by facile solid-state and co-precipitation route

    NASA Astrophysics Data System (ADS)

    Thorat, J. H.; Kanade, K. G.; Nikam, L. K.; Chaudhari, P. D.; Panmand, R. P.; Kale, B. B.

    2012-02-01

    In this study, we report the synthesis of well-aligned nanocrystalline hexagonal zinc oxide (ZnO) nanoparticles by facile solid-state and co-precipitation method. The co-precipitation reactions were performed using aqueous and ethylene glycol (EG) medium using zinc acetate and adipic acid to obtain zinc adipate and further decomposition at 450 °C to confer nanocrystalline ZnO hexagons. XRD shows the hexagonal wurtzite structure of the ZnO. Thermal study reveals complete formation of ZnO at 430 °C in case of solid-state method, whereas in case of co-precipitation method complete formation was observed at 400 °C. Field emission scanning electron microscope shows spherical morphology for ZnO synthesized by solid-state method. The aqueous-mediated ZnO by co-precipitation method shows rod-like morphology. These rods are formed via self assembling of spherical nanoparticles, however, uniformly dispersed spherical crystallites were seen in EG-mediated ZnO. Transmission electron microscope (TEM) investigations clearly show well aligned and highly crystalline transparent and thin hexagonal ZnO. The particle size was measured using TEM and was observed to be 50-60 nm in case of solid-state method and aqueous-mediated co-precipitation method, while 25-50 nm in case of EG-mediated co-precipitation method. UV absorption spectra showed sharp absorption peaks with a blue shift for EG-mediated ZnO, which demonstrate the mono-dispersed lower particle size. The band gap of the ZnO was observed to be 3.4 eV which is higher than the bulk, implies nanocrystalline nature of the ZnO. The photoluminescence studies clearly indicate the strong violet and weak blue emission in ZnO nanoparticles which is quite unique. The process investigated may be useful to synthesize other oxide semiconductors and transition metal oxides.

  18. Energy penetration into arrays of aligned nanowires irradiated with relativistic intensities: Scaling to terabar pressures.

    PubMed

    Bargsten, Clayton; Hollinger, Reed; Capeluto, Maria Gabriela; Kaymak, Vural; Pukhov, Alexander; Wang, Shoujun; Rockwood, Alex; Wang, Yong; Keiss, David; Tommasini, Riccardo; London, Richard; Park, Jaebum; Busquet, Michel; Klapisch, Marcel; Shlyaptsev, Vyacheslav N; Rocca, Jorge J

    2017-01-01

    Ultrahigh-energy density (UHED) matter, characterized by energy densities >1 × 10(8) J cm(-3) and pressures greater than a gigabar, is encountered in the center of stars and inertial confinement fusion capsules driven by the world's largest lasers. Similar conditions can be obtained with compact, ultrahigh contrast, femtosecond lasers focused to relativistic intensities onto targets composed of aligned nanowire arrays. We report the measurement of the key physical process in determining the energy density deposited in high-aspect-ratio nanowire array plasmas: the energy penetration. By monitoring the x-ray emission from buried Co tracer segments in Ni nanowire arrays irradiated at an intensity of 4 × 10(19) W cm(-2), we demonstrate energy penetration depths of several micrometers, leading to UHED plasmas of that size. Relativistic three-dimensional particle-in-cell simulations, validated by these measurements, predict that irradiation of nanostructures at intensities of >1 × 10(22) W cm(-2) will lead to a virtually unexplored extreme UHED plasma regime characterized by energy densities in excess of 8 × 10(10) J cm(-3), equivalent to a pressure of 0.35 Tbar.

  19. Metal-organic framework templated synthesis of ultrathin, well-aligned metallic nanowires.

    PubMed

    Volosskiy, Boris; Niwa, Kenta; Chen, Yu; Zhao, Zipeng; Weiss, Nathan O; Zhong, Xing; Ding, Mengning; Lee, Chain; Huang, Yu; Duan, Xiangfeng

    2015-03-24

    With well-defined porous structures and dimensions, metal-organic frameworks (MOFs) can function as versatile templates for the growth of metallic nanostructures with precisely controlled shapes and sizes. Using MOFs as templates, metallic nanostructures can be grown without the need of bulky surfactants and thus preserve their intrinsic surface. Additionally, the high surface area of MOFs can also ensure that the surface of the template metallic nanostructures is readily accessible, which is critical for the proper function of catalysts or sensors. The hybrid metal@MOF structures have been demonstrated to exhibit useful properties not found in either component separately. Here we report the growth of ultrafine metallic nanowires inside one-dimensional MOF pores with well-controlled shape and size. Our study shows that solvent selection plays an important role in controlling precursor loading and the reduction rate inside the MOF pores for the formation of the nanowires. The growth of the well-aligned, ultrathin nanowires was monitored and characterized by transmission electron microscopy, X-ray diffraction, UV-vis spectroscopy, fluorescence studies, and Brunauer-Emmet-Teller surface area analysis.

  20. Energy Density in Aligned Nanowire Arrays Irradiated with Relativistic Intensities: Path to Terabar Pressure Plasmas

    NASA Astrophysics Data System (ADS)

    Rocca, J.; Bargsten, C.; Hollinger, R.; Shylaptsev, V.; Wang, S.; Rockwood, A.; Wang, Y.; Keiss, D.; Capeluto, M.; Kaymak, V.; Pukhov, A.; Tommasini, R.; London, R.; Park, J.

    2016-10-01

    Ultra-high-energy-density (UHED) plasmas, characterized by energy densities >1 x 108 J cm-3 and pressures greater than a gigabar are encountered in the center of stars and in inertial confinement fusion capsules driven by the world's largest lasers. Similar conditions can be obtained with compact, ultra-high contrast, femtosecond lasers focused to relativistic intensities onto aligned nanowire array targets. Here we report the measurement of the key physical process in determining the energy density deposited in high aspect ratio nanowire array plasmas: the energy penetration. By monitoring the x-ray emission from buried Co tracer segments in Ni nanowire arrays irradiated at an intensity of 4 x 1019 W cm-2, we demonstrate energy penetration depths of several μm, leading to UHED plasmas of that size. Relativistic 3D particle-in-cell-simulations validated by these measurements predict that irradiation of nanostructures at increased intensity will lead to a virtually unexplored extreme UHED plasma regime characterized by energy densities in excess of 8 x 1010 J cm-3, equivalent to a pressure of 0.35 Tbar. This work was supported by the Fusion Energy Program, Office of Science of the U.S Department of Energy, and by the Defense Threat Reduction Agency.

  1. Energy penetration into arrays of aligned nanowires irradiated with relativistic intensities: Scaling to terabar pressures

    PubMed Central

    Bargsten, Clayton; Hollinger, Reed; Capeluto, Maria Gabriela; Kaymak, Vural; Pukhov, Alexander; Wang, Shoujun; Rockwood, Alex; Wang, Yong; Keiss, David; Tommasini, Riccardo; London, Richard; Park, Jaebum; Busquet, Michel; Klapisch, Marcel; Shlyaptsev, Vyacheslav N.; Rocca, Jorge J.

    2017-01-01

    Ultrahigh-energy density (UHED) matter, characterized by energy densities >1 × 108 J cm−3 and pressures greater than a gigabar, is encountered in the center of stars and inertial confinement fusion capsules driven by the world’s largest lasers. Similar conditions can be obtained with compact, ultrahigh contrast, femtosecond lasers focused to relativistic intensities onto targets composed of aligned nanowire arrays. We report the measurement of the key physical process in determining the energy density deposited in high-aspect-ratio nanowire array plasmas: the energy penetration. By monitoring the x-ray emission from buried Co tracer segments in Ni nanowire arrays irradiated at an intensity of 4 × 1019 W cm−2, we demonstrate energy penetration depths of several micrometers, leading to UHED plasmas of that size. Relativistic three-dimensional particle-in-cell simulations, validated by these measurements, predict that irradiation of nanostructures at intensities of >1 × 1022 W cm−2 will lead to a virtually unexplored extreme UHED plasma regime characterized by energy densities in excess of 8 × 1010 J cm−3, equivalent to a pressure of 0.35 Tbar. PMID:28097218

  2. Room temperature-synthesized vertically aligned InSb nanowires: electrical transport and field emission characteristics

    PubMed Central

    2013-01-01

    Vertically aligned single-crystal InSb nanowires were synthesized via the electrochemical method at room temperature. The characteristics of Fourier transform infrared spectrum revealed that in the syntheses of InSb nanowires, energy bandgap shifts towards the short wavelength with the occurrence of an electron accumulation layer. The current–voltage curve, based on the metal–semiconductor–metal model, showed a high electron carrier concentration of 2.0 × 1017 cm−3 and a high electron mobility of 446.42 cm2 V−1 s−1. Additionally, the high carrier concentration of the InSb semiconductor with the surface accumulation layer induced a downward band bending effect that reduces the electron tunneling barrier. Consequently, the InSb nanowires exhibit significant field emission properties with an extremely low turn-on field of 1.84 V μm−1 and an estimative threshold field of 3.36 V μm−1. PMID:23399075

  3. Deep-level emission in ZnO nanowires and bulk crystals: Excitation-intensity dependence versus crystalline quality

    SciTech Connect

    Hou, Dongchao; Voss, Tobias; Ronning, Carsten; Menzel, Andreas; Zacharias, Margit

    2014-06-21

    The excitation-intensity dependence of the excitonic near-band-edge emission (NBE) and deep-level related emission (DLE) bands in ZnO nanowires and bulk crystals is studied, which show distinctly different power laws. The behavior can be well explained with a rate-equation model taking into account deep donor and acceptor levels with certain capture cross sections for electrons from the conduction band and different radiative lifetimes. In addition, a further crucial ingredient of this model is the background n-type doping concentration inherent in almost all ZnO single crystals. The interplay of the deep defects and the background free-electron concentration in the conduction band at room temperature reproduces the experimental results well over a wide range of excitation intensities (almost five orders of magnitude). The results demonstrate that for many ZnO bulk samples and nanostructures, the relative intensity R = I{sub NBE}/I{sub DLE} can be adjusted over a wide range by varying the excitation intensity, thus, showing that R should not be taken as an indicator for the crystalline quality of ZnO samples unless absolute photoluminescence intensities under calibrated excitation conditions are compared. On the other hand, the results establish an all-optical technique to determine the relative doping levels in different ZnO samples by measuring the excitation-intensity dependence of the UV and visible luminescence bands.

  4. Vertically aligned GaAs nanowires on graphite and few-layer graphene: generic model and epitaxial growth.

    PubMed

    Munshi, A Mazid; Dheeraj, Dasa L; Fauske, Vidar T; Kim, Dong-Chul; van Helvoort, Antonius T J; Fimland, Bjørn-Ove; Weman, Helge

    2012-09-12

    By utilizing the reduced contact area of nanowires, we show that epitaxial growth of a broad range of semiconductors on graphene can in principle be achieved. A generic atomic model is presented which describes the epitaxial growth configurations applicable to all conventional semiconductor materials. The model is experimentally verified by demonstrating the growth of vertically aligned GaAs nanowires on graphite and few-layer graphene by the self-catalyzed vapor-liquid-solid technique using molecular beam epitaxy. A two-temperature growth strategy was used to increase the nanowire density. Due to the self-catalyzed growth technique used, the nanowires were found to have a regular hexagonal cross-sectional shape, and are uniform in length and diameter. Electron microscopy studies reveal an epitaxial relationship of the grown nanowires with the underlying graphitic substrates. Two relative orientations of the nanowire side-facets were observed, which is well explained by the proposed atomic model. A prototype of a single GaAs nanowire photodetector demonstrates a high-quality material. With GaAs being a model system, as well as a very useful material for various optoelectronic applications, we anticipate this particular GaAs nanowire/graphene hybrid to be promising for flexible and low-cost solar cells.

  5. Single-crystalline zinc oxide nanowires as photoanode material for dye-sensitized solar cells.

    PubMed

    Ho, Shu-Te; Hsiao, Ching-Lun; Lin, Hsin-Yu; Chen, Hsiang-An; Wang, Chiu-Yen; Lin, Heh-Nan

    2010-10-01

    This study reports the use of single-crystalline and well-aligned ZnO nanowires as photoanode material for dye-sensitized solar cells. The ZnO nanowires are grown on fluorine-doped tin oxide coated glass substrates without catalysts by thermal evaporation. In spite of low roughness factors of around 25 for the nanowire photoanodes, the fabricated solar cells yield power conversion efficiencies of around 1.3% under AM 1.5G (100 mW cm-2) illumination. Moreover, fill factors of around 0.5 have been achieved and are relatively high when compared with reported values from ZnO nanowire photoanodes. The results reveal the advantage of using single-crystalline nanowires as photoanode material and provide clues for the advancement of nanowire based dye-sensitized solar cells.

  6. Metal catalyst for low-temperature growth of controlled zinc oxide nanowires on arbitrary substrates.

    PubMed

    Kim, Baek Hyun; Kwon, Jae W

    2014-03-14

    Zinc oxide nanowires generated by hydrothermal method present superior physical and chemical characteristics. Quality control of the growth has been very challenging and controlled growth is only achievable under very limited conditions using homogeneous seed layers with high temperature processes. Here we show the controlled ZnO nanowire growth on various organic and inorganic materials without the requirement of a homogeneous seed layer and a high temperature process. We also report the discovery of an important role of the electronegativity in the nanowire growth on arbitrary substrates. Using heterogeneous metal oxide interlayers with low-temperature hydrothermal methods, we demonstrate well-controlled ZnO nanowire arrays and single nanowires on flat or curved surfaces. A metal catalyst and heterogeneous metal oxide interlayers are found to determine lattice-match with ZnO and to largely influence the controlled alignment. These findings will contribute to the development of novel nanodevices using controlled nanowires.

  7. Metal Catalyst for Low-Temperature Growth of Controlled Zinc Oxide Nanowires on Arbitrary Substrates

    PubMed Central

    Kim, Baek Hyun; Kwon, Jae W.

    2014-01-01

    Zinc oxide nanowires generated by hydrothermal method present superior physical and chemical characteristics. Quality control of the growth has been very challenging and controlled growth is only achievable under very limited conditions using homogeneous seed layers with high temperature processes. Here we show the controlled ZnO nanowire growth on various organic and inorganic materials without the requirement of a homogeneous seed layer and a high temperature process. We also report the discovery of an important role of the electronegativity in the nanowire growth on arbitrary substrates. Using heterogeneous metal oxide interlayers with low-temperature hydrothermal methods, we demonstrate well-controlled ZnO nanowire arrays and single nanowires on flat or curved surfaces. A metal catalyst and heterogeneous metal oxide interlayers are found to determine lattice-match with ZnO and to largely influence the controlled alignment. These findings will contribute to the development of novel nanodevices using controlled nanowires. PMID:24625584

  8. Broadband light-absorption InGaN photoanode assisted by imprint patterning and ZnO nanowire growth for energy conversion

    NASA Astrophysics Data System (ADS)

    Kang, Junjie; Quang Dang, Vinh; Li, Hongjian; Moon, Sungjin; Li, Panpan; Kim, Yangdoo; Kim, Chaehyun; Choi, Jinyoung; Choi, Hakjong; Liu, Zhiqiang; Lee, Heon

    2017-01-01

    In this research, an InGaN-based photoanode with a broadband light-absorption range from ultraviolet to green, patterned by imprint lithography and branched by ZnO nanowires, has been applied to water splitting. Over the solar spectrum range, the absorbance increases due to the scattering effect of the micro-structure compared to that of flat surface InGaN, which reaches a maximum of over 90% at 380 nm as ZnO nanowires are further employed in this novel photoanode. Consequently, the induced photocurrent density of the InGaN photoanode with a domelike structure and ZnO nanowires on the surface shows a remarkable enhancement of seven times that of the one with a flat surface. Further investigation indicates the wet-etching process for defect removal has an essential impact on photocurrent efficiency. This design demonstrates an innovative approach for water splitting.

  9. Chemically synthesized nanowire TiO2/ZnO core-shell p-n junction array for high sensitivity ultraviolet photodetector

    NASA Astrophysics Data System (ADS)

    Dao, T. D.; Dang, C. T. T.; Han, G.; Hoang, C. V.; Yi, W.; Narayanamurti, V.; Nagao, T.

    2013-11-01

    A sol-gel-based ultrathin TiO2 lamination coating was adapted to a hydrothermally grown ZnO nanowire array to realize an all-oxide ultra-sensitive p-n photodiode. The core-shell heterojunction—the key component of the device—is composed of a 5-10 nm thick p-type Cr-doped TiO2 nanoshell and n-type single-crystalline ZnO nanowires (50 nm radius). Owing to the enhanced light scattering and carrier separation in the core-shell architecture, this device exhibits the highest performance among the ZnO nanowire-based photodetectors. At a moderate reverse bias of -5 V and under ultraviolet light illumination at 104 μW, it shows a switch current ratio of 140 and a responsivity as large as 250 A/W, while it shows nearly no response to the infrared and visible light.

  10. Alignment of human cardiomyocytes on laser patterned biphasic core/shell nanowire assemblies

    NASA Astrophysics Data System (ADS)

    Kiefer, Karin; Lee, Juseok; Haidar, Ayman; Martinez Miró, Marina; Akkan, Cagri Kaan; Veith, Michael; Cenk Aktas, Oral; Abdul-Khaliq, Hashim

    2014-12-01

    The management of end stage heart failure patients is only possible by heart transplantation or by the implantation of artificial hearts as a bridge for later transplantation. However, these therapeutic strategies are limited by a lack of donor hearts and by the associated complications, such as coagulation and infection, due to the used artificial mechanical circulatory assist devices. Therefore, new strategies for myocardial regenerative approaches are under extensive research to produce contractile myocardial tissue in the future to replace non-contractile myocardial ischemic and scarred tissue. Different approaches, such as cell transplantation, have been studied intensively. Although successful approaches have been observed, there are still limitations to the application. It is envisaged that myocardial tissue engineering can be used to help replace infarcted non-contractile tissue. The developed tissue should later mimic the aligned fibrillar structure of the extracellular matrix and provide important guidance cues for the survival, function and the needed orientation of cardiomyocytes. Nanostructured surfaces have been tested to provide a guided direction that cells can follow. In the present study, the cellular adhesion/alignment of human cardiomyocytes and the biocompatibility have been investigated after cultivation on different laser-patterned nanowires compared with unmodified nanowires. As a result, the nanostructured surfaces possessed good biocompatibility before and after laser modification. The laser-induced scalability of the pattern enabled the growth and orientation of the adhered myocardial tissue. Such approaches may be used to modify the surface of potential scaffolds to develop myocardial contractile tissue in the future.

  11. Growth Conditions Control the Elastic and Electrical Properties of ZnO Nanowires.

    PubMed

    Wang, Xiaoguang; Chen, Kai; Zhang, Yongqiang; Wan, Jingchun; Warren, Oden L; Oh, Jason; Li, Ju; Ma, Evan; Shan, Zhiwei

    2015-12-09

    Great efforts have been made to synthesize ZnO nanowires (NWs) as building blocks for a broad range of applications because of their unique mechanical and mechanoelectrical properties. However, little attention has been paid to the correlation between the NWs synthesis condition and these properties. Here we demonstrate that by slightly adjusting the NW growth conditions, the cross-sectional shape of the NWs can be tuned from hexagonal to circular. Room temperature photoluminescence spectra suggested that NWs with cylindrical geometry have a higher density of point defects. In situ transmission electron microscopy (TEM) uniaxial tensile-electrical coupling tests revealed that for similar diameter, the Young's modulus and electrical resistivity of hexagonal NWs is always larger than that of cylindrical NWs, whereas the piezoresistive coefficient of cylindrical NWs is generally higher. With decreasing diameter, the Young's modulus and the resistivity of NWs increase, whereas their piezoresistive coefficient decreases, regardless of the sample geometry. Our findings shed new light on understanding and advancing the performance of ZnO-NW-based devices through optimizing the synthesis conditions of the NWs.

  12. Effects of hydroxylation and silanization on the surface properties of ZnO nanowires.

    PubMed

    García Núñez, C; Sachsenhauser, M; Blashcke, B; García Marín, A; Garrido, Jose A; Pau, Jose L

    2015-03-11

    Silanization is commonly used to form bonds between inorganic materials and biomolecules as a step in the surface preparation of solid-state biosensors. This work investigates the effects of silanization with amino-propyldiethoxymethylsilane on hydroxylated sidewalls of zinc oxide (ZnO) nanowires (NWs). The surface properties and electrical characteristics of NWs are analyzed by different techniques after their hydroxylation and later silanization. Contact angle measurements reveal a stronger hydrophobic behavior after silanization, and X-ray photoelectron spectroscopy (XPS) results show a reduction of the surface dipole induced by the replacement of the hydroxyl group with the amine terminal group. The lower work function obtained after silanization in contact potential measurements corroborates the attenuation of the surface dipole observed in XPS. Furthermore, the surface band bending of NWs is determined from surface photovoltage measurements upon irradiation with UV light, yielding a 0.5 eV energy in hydroxylated NWs, and 0.18 eV, after silanization. From those results, a reduction in the surface state density of 3.1 × 10(11) cm(-2) is estimated after silanization. The current-voltage (I-V) characteristics measured in a silanized single NW device show a reduction of the resistance, due to the enhancement of the conductive volume inside the NW, which also improves the linearity of the I-V characteristic.

  13. Tuning quantum corrections and magnetoresistance in ZnO nanowires by ion implantation.

    PubMed

    Zeng, Y J; Pereira, L M C; Menghini, M; Temst, K; Vantomme, A; Locquet, J-P; Van Haesendonck, C

    2012-02-08

    Using ion implantation, the electrical as well as the magnetotransport properties of individual ZnO nanowires (NWs) can be tuned. The virgin NWs are configured as field-effect transistors which are in the enhancement mode. Al-implanted NWs reveal a three-dimensional metallic-like behavior, for which the magnetoresistance is well described by a semiempirical model that takes into account the presence of doping induced local magnetic moments and of two conduction bands. On the other hand, one-dimensional electron transport is observed in Co-implanted NWs. At low magnetic fields, the anisotropic magnetoresistance can be described in the framework of weak electron localization in the presence of strong spin-orbit scattering. From the weak localization, a large phase coherence length is inferred that reaches up to 800 nm at 2.5 K. The temperature-dependent dephasing is shown to result from a one-dimensional Nyquist noise-related mechanism. At the lowest temperatures, the phase coherence length becomes limited by magnetic scattering.

  14. Modeling and characterization of extremely thin absorber (eta) solar cells based on ZnO nanowires.

    PubMed

    Mora-Seró, Iván; Giménez, Sixto; Fabregat-Santiago, Francisco; Azaceta, Eneko; Tena-Zaera, Ramón; Bisquert, Juan

    2011-04-21

    Extremely thin absorber (eta)-solar cells based on ZnO nanowires sensitized with a thin layer of CdSe have been prepared, using CuSCN as hole transporting material. Samples with significantly different photovoltaic performance have been analyzed and a general model of their behavior was obtained. We have used impedance spectroscopy to model the device discriminating the series resistance, the role of the hole conducting material CuSCN, and the interface process. Correlating the impedance analysis with the microstructural properties of the solar cell interfaces, a good description of the solar cell performance is obtained. The use of thick CdSe layers leads to high recombination resistances, increasing the open circuit voltage of the devices. However, there is an increase of the internal recombination in thick light absorbing layers that also inhibit a good penetration of CuSCN, reducing the photocurrent. The model will play an important role on the optimization of these devices. This analysis could have important implications for the modeling and optimization of all-solid devices using a sensitizing configuration.

  15. Characteristics of CVD graphene nanoribbon formed by a ZnO nanowire hardmask

    NASA Astrophysics Data System (ADS)

    Kang, Chang Goo; Kang, Jang Won; Lee, Sang Kyung; Lee, Seung Yong; Hum Cho, Chun; Hwang, Hyeon Jun; Lee, Young Gon; Heo, Jinseong; Chung, Hyun-Jong; Yang, Heejun; Seo, Sunae; Park, Seong-Ju; Ko, Ki Young; Ahn, Jinho; Lee, Byoung Hun

    2011-07-01

    A graphene nanoribbon (GNR) is an important basic structure to open a bandgap in graphene. The GNR processes reported in the literature are complex, time-consuming, and expensive; moreover, the device yield is relatively low. In this paper, a simple new process to fabricate a long and straight graphene nanoribbon with a high yield has been proposed. This process utilizes CVD graphene substrate and a ZnO nanowire as the hardmask for patterning. 8 µm long and 50-100 nm wide GNRs were successfully demonstrated in high density without any trimming, and ~ 10% device yield was realized with a top-down patterning process. After passivating the surfaces of the GNRs using a low temperature atomic layer deposition (ALD) of Al2O3, high performance GNR MOSFETs with symmetric drain-current-gate-voltage (Id-Vg) curves were demonstrated and a field effect mobility up to ~ 1200 cm2 V - 1 s - 1 was achieved at Vd = 10 mV.

  16. Characteristics of CVD graphene nanoribbon formed by a ZnO nanowire hardmask.

    PubMed

    Kang, Chang Goo; Kang, Jang Won; Lee, Sang Kyung; Lee, Seung Yong; Cho, Chun Hum; Hwang, Hyeon Jun; Lee, Young Gon; Heo, Jinseong; Chung, Hyun-Jong; Yang, Heejun; Seo, Sunae; Park, Seong-Ju; Ko, Ki Young; Ahn, Jinho; Lee, Byoung Hun

    2011-07-22

    A graphene nanoribbon (GNR) is an important basic structure to open a bandgap in graphene. The GNR processes reported in the literature are complex, time-consuming, and expensive; moreover, the device yield is relatively low. In this paper, a simple new process to fabricate a long and straight graphene nanoribbon with a high yield has been proposed. This process utilizes CVD graphene substrate and a ZnO nanowire as the hardmask for patterning. 8 µm long and 50-100 nm wide GNRs were successfully demonstrated in high density without any trimming, and ∼ 10% device yield was realized with a top-down patterning process. After passivating the surfaces of the GNRs using a low temperature atomic layer deposition (ALD) of Al(2)O(3), high performance GNR MOSFETs with symmetric drain-current-gate-voltage (I(d)-V(g)) curves were demonstrated and a field effect mobility up to ∼ 1200 cm(2) V(-1) s(-1) was achieved at V(d) = 10 mV.

  17. Complex tribomechanical characterization of ZnO nanowires: nanomanipulations supported by FEM simulations

    NASA Astrophysics Data System (ADS)

    Vlassov, Sergei; Polyakov, Boris; Oras, Sven; Vahtrus, Mikk; Antsov, Mikk; Šutka, Andris; Smits, Krisjanis; Dorogin, Leonid M.; Lõhmus, Rünno

    2016-08-01

    In the present work, we demonstrate a novel approach to nanotribological measurements based on the bending manipulation of hexagonal ZnO nanowires (NWs) in an adjustable half-suspended configuration inside a scanning electron microscope. A pick-and-place manipulation technique was used to control the length of the adhered part of each suspended NW. Static and kinetic friction were found by a ‘self-sensing’ approach based on the strain profile of the elastically bent NW during manipulation and its Young’s modulus, which was separately measured in a three-point bending test with an atomic force microscope. The calculation of static friction from the most bent state was completely reconsidered and a novel more realistic crack-based model was proposed. It was demonstrated that, in contrast to assumptions made in previously published models, interfacial stresses in statically bent NW are highly localized and interfacial strength is comparable to the bending strength of NW measured in respective bending tests.

  18. Carbon related donor bound exciton transitions in ZnO nanowires

    SciTech Connect

    Mohammadbeigi, F.; Kumar, E. Senthil; Alagha, S.; Anderson, I.; Watkins, S. P.

    2014-08-07

    Several shallow donor bound exciton photoluminescence (PL) transitions are reported in ZnO nanowires doped with carbon. The emission energies are in the range of 3360.8–3361.9 meV, close to previously reported emission lines due to excitons bound to donor point defects, such as Ga, Al, In, and H. The addition of small amounts of hydrogen during growth results in a strong enhancement of the PL of these carbon related emission lines, yet PL and annealing measurements indicate no appreciable bulk hydrogen. The observation of two electron satellites for these emission lines enables the determination of the donor binding energies. The dependence of exciton localization energy on donor binding energy departs somewhat from the usual linear relationship observed for group III donors, indicating a qualitatively different central cell potential, as one would expect for a complex. Emission lines due to excitons bound to ionized donors associated with these defects are also observed. The dependence of the PL emission intensities on temperature and growth conditions demonstrates that the lines are due to distinct complexes and not merely excited states of each other.

  19. Electrodeposited ZnO nanowires as photoelectrodes in solid-state organic dye-sensitized solar cells.

    PubMed

    Muguerra, Hervé; Berthoux, Gaëlle; Yahya, Wan Zaireen Nisa; Kervella, Yann; Ivanova, Valentina; Bouclé, Johann; Demadrille, Renaud

    2014-04-28

    A new approach for developing solid-state dye-sensitised solar cells (DSSCs) on glass/ITO and plastic substrates (PEN/ITO) is presented in this manuscript. A two step electrodeposition technique has been employed to realize the ZnO photoelectrodes. First a ZnO thin film is deposited on the ITO substrate and subsequently on this buffer layer 650 nm long ZnO nanowires are grown. The different nanostructured electrodes are crystallized and show a transparency close to 80% in the visible spectral range. The electrodes are then sensitized with a new purely organic dye, whose synthesis is presented here, which reveals a wide absorption spectrum and a high molar extinction coefficient. Finally, the sensitized electrodes were employed for the fabrication of liquid and solid-state DSSCs, using, respectively, a liquid iodine/iodide electrolyte and the spiro-OMeTAD hole transporter. These devices represent the first solid-state DSSCs fabricated using electrodeposited zinc oxide nanowires. Their power conversion efficiency is still limited, respectively, 0.18% and 0.03% under standard AM 1.5G sunlight (100 mW cm(-2)), nevertheless, these results prove the interest in this low-temperature deposition method for the realization of nanostructured electrodes on rigid and flexible substrates, and open up new perspectives for the development of solid state DSSCs on plastic substrates.

  20. Electrodeposited ZnO nanowire-based light-emitting diodes with tunable emission from near-UV to blue

    NASA Astrophysics Data System (ADS)

    Pauporté, Thierry; Lupan, Oleg; Viana, Bruno

    2013-03-01

    The bandgap control of doped-ZnO nanowires is important for tunable light emitting diodes (LEDs). Ultraviolet (UV), blue and violet LED structures based on Ag-doped ZnO /p-GaN and Cd-alloyed ZnO (Zn1-xCdxO) nanorods/p-GaN heterojunction have been fabricated by epitaxial electrodeposition at low temperatures and thermal annealing. UV electroluminescence (EL) peak around 397 nm observed from pure nanowires-ZnO/p-GaN at room temperature was shifted to 406 nm or 423 nm by using heterojunction between Ag-doped ZnO (ZnO:Ag) and Zn1-xCdxO-nanorods grown on p-GaN substrate, respectively. The electroluminescence emission threshold voltage was low at about 5.0 V and EL intensity increased with rise in the applied voltage bias. Presented experimental results demonstrate the tunable emission from silver and cadmium-doping in ZnO-based nanoLEDs.

  1. An Enhanced UV-Vis-NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure.

    PubMed

    Zheng, Zhi; Gan, Lin; Zhang, Jianbing; Zhuge, Fuwei; Zhai, Tianyou

    2017-03-01

    ZnO nanostructure-based photodetectors have a wide applications in many aspects, however, the response range of which are mainly restricted in the UV region dictated by its bandgap. Herein, UV-vis-NIR sensitive ZnO photodetectors consisting of ZnO nanowires (NW) array/PbS quantum dots (QDs) heterostructures are fabricated through modified electrospining method and an exchanging process. Besides wider response region compared to pure ZnO NWs based photodetectors, the heterostructures based photodetectors have faster response and recovery speed in UV range. Moreover, such photodetectors demonstrate good flexibility as well, which maintain almost constant performances under extreme (up to 180°) and repeat (up to 200 cycles) bending conditions in UV-vis-NIR range. Finally, this strategy is further verified on other kinds of 1D nanowires and 0D QDs, and similar enhancement on the performance of corresponding photodetecetors can be acquired, evidencing the universality of this strategy.

  2. An Enhanced UV–Vis–NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure

    PubMed Central

    Zheng, Zhi; Gan, Lin; Zhang, Jianbing; Zhuge, Fuwei

    2016-01-01

    ZnO nanostructure‐based photodetectors have a wide applications in many aspects, however, the response range of which are mainly restricted in the UV region dictated by its bandgap. Herein, UV–vis–NIR sensitive ZnO photodetectors consisting of ZnO nanowires (NW) array/PbS quantum dots (QDs) heterostructures are fabricated through modified electrospining method and an exchanging process. Besides wider response region compared to pure ZnO NWs based photodetectors, the heterostructures based photodetectors have faster response and recovery speed in UV range. Moreover, such photodetectors demonstrate good flexibility as well, which maintain almost constant performances under extreme (up to 180°) and repeat (up to 200 cycles) bending conditions in UV–vis–NIR range. Finally, this strategy is further verified on other kinds of 1D nanowires and 0D QDs, and similar enhancement on the performance of corresponding photodetecetors can be acquired, evidencing the universality of this strategy. PMID:28331785

  3. Enhanced power conversion efficiency of CdS quantum dot sensitized solar cells with ZnO nanowire arrays as the photoanodes

    NASA Astrophysics Data System (ADS)

    Qi, Junjie; Liu, Wang; Biswas, Chandan; Zhang, Guangjie; Sun, Lifang; Wang, Zengze; Hu, Xiaofeng; Zhang, Yue

    2015-08-01

    We report the fabrication of CdS quantum dot sensitized solar cells with ZnO nanowire arrays as the photoanodes. The influences of precursor solution temperature and sensitizing cycles on the performance of CdS quantum dots sensitized ZnO nanowires solar cells were studied. Successive ionic layer adsorption and reaction (SILAR) method was applied to deposit CdS quantum dots on the surface of ZnO nanowire arrays for assembling ZnO/CdS electrodes. The results of scanning electron microscopic (SEM), X-ray diffraction (XRD) patterns and UV-vis absorption spectroscopy indicated that the ZnO nanowires electrodes were well-covered with CdS quantum dots. The temperature of the ethanol sensitizing solutions significantly influenced the performance of ZnO/CdS electrodes by affecting the rate of deposition reaction and the penetration ability of ethanol solution. The CdS quantum dots sensitized ZnO-based solar cells exhibited a short-circuit current density (Jsc) of 3.1 mA/cm2, an open-circuit voltage (Voc) of 0.55 V and a photovoltaic conversion efficiency of 0.72%, which is much higher than that reported in literatures, under the illumination of one sun (AM 1.5, 100 mW/cm2) when the temperature of the ethanol solutions was 60 °C and ZnO arrays were sensitized for seven times.

  4. Effect of gamma irradiation on Schottky-contacted vertically aligned ZnO nanorod-based hydrogen sensor

    NASA Astrophysics Data System (ADS)

    Ranwa, Sapana; Singh Barala, Surendra; Fanetti, Mattia; Kumar, Mahesh

    2016-08-01

    We report the impact of gamma irradiation on the performance of a gold Schottky-contacted ZnO nanorod-based hydrogen sensor. RF-sputtered vertically aligned highly c-axis-oriented ZnO NRs were grown on Si(100) substrate. X-ray diffraction shows no significant change in crystal structure at low gamma doses from 1 to 5 kGy. As gamma irradiation doses increase to 10 kGy, the single crystalline ZnO structure converts to polycrystalline. The photoluminescence spectra also shows suppression of the near-band emission peak and the huge wide-band spectrum indicates the generation of structural defects at high gamma doses. At 1 kGy, the hydrogen sensor response was enhanced from 67% to 77% for 1% hydrogen in pure argon at a 150 °C operating temperature. However, at 10 kGy, the relative response decreases to 33.5%. High gamma irradiation causes displacement damage and defects in ZnO NRs, and as a result, degrades the sensor’s performance as a result. Low gamma irradiation doses activate the ZnO NR surface through ionization, which enhances the sensor performance. The relative response of the hydrogen sensor was enhanced by ∼14.9% with respect to pristine ZnO using 1 kGy gamma ray treatment.

  5. High-efficiency second harmonic generation from a single hybrid ZnO nanowire/Au plasmonic nano-oligomer.

    PubMed

    Grinblat, Gustavo; Rahmani, Mohsen; Cortés, Emiliano; Caldarola, Martín; Comedi, David; Maier, Stefan A; Bragas, Andrea V

    2014-11-12

    We introduce a plasmonic-semiconductor hybrid nanosystem, consisting of a ZnO nanowire coupled to a gold pentamer oligomer by crossing the hot-spot. It is demonstrated that the hybrid system exhibits a second harmonic (SH) conversion efficiency of ∼3 × 10(-5)%, which is among the highest values for a nanoscale object at optical frequencies reported so far. The SH intensity was found to be ∼1700 times larger than that from the same nanowire excited outside the hot-spot. Placing high nonlinear susceptibility materials precisely in plasmonic confined-field regions to enhance SH generation opens new perspectives for highly efficient light frequency up-conversion on the nanoscale.

  6. Non-classical logic inverter coupling a ZnO nanowire-based Schottky barrier transistor and adjacent Schottky diode.

    PubMed

    Hosseini Shokouh, Seyed Hossein; Raza, Syed Raza Ali; Lee, Hee Sung; Im, Seongil

    2014-08-21

    On a single ZnO nanowire (NW), we fabricated an inverter-type device comprising a Schottky diode (SD) and field-effect transistor (FET), aiming at 1-dimensional (1D) electronic circuits with low power consumption. The SD and adjacent FET worked respectively as the load and driver, so that voltage signals could be easily extracted as the output. In addition, NW FET with a transparent conducting oxide as top gate turned out to be very photosensitive, although ZnO NW SD was blind to visible light. Based on this, we could achieve an array of photo-inverter cells on one NW. Our non-classical inverter is regarded as quite practical for both logic and photo-sensing due to its performance as well as simple device configuration.

  7. Facile synthesis of highly uniform Mn/Co-codoped ZnO nanowires: optical, electrical, and magnetic properties.

    PubMed

    Li, Huifeng; Huang, Yunhua; Zhang, Qi; Qiao, Yi; Gu, Yousong; Liu, Jing; Zhang, Yue

    2011-02-01

    In this article, Co/Mn-codoped ZnO nanowires (NWs) were successfully synthesized on a silicon substrate by the thermal evaporation method with Au catalyst. The X-ray diffraction pattern indicated that the Co/Mn-codoped ZnO NWs are a hexagonal wurtzite structure without a second phase, and energy dispersive X-ray spectroscopy revealed that the Co and Mn ions were introduced into the ZnO NWs with the content of ∼0.8 at% and ∼1.2 at%, respectively. Photoluminescence spectra and Raman spectra showed that the Co/Mn were doped into the NWs and resulted in the shift of the near-band-edge emission. Moreover, the novel Raman peak at 519.3 cm(-1) has suggested that the two kinds of cations via doping could affect the local polarizability. Compared with the undoped ZnO NW, the electrical measurement showed that the Co/Mn-codoping enhanced the conductivity by an order of magnitude due to the presence of Co, Mn cations. The electron mobility and carrier concentration of a fabricated field effect transistor (FET) device is 679 cm2 V(-1) s(-1) and 2×10(18) cm(-3), respectively. Furthermore, the M-H curve demonstrated that the Co/Mn-codoped ZnO NWs have obvious ferromagnetic characteristics at room temperature. Our study enhances the understanding of the novel performances of transition-metal codoped ZnO NWs and also provides a potential way to fabricate optoelectronic devices.

  8. Photoelectric probing of the interfacial trap density-of-states in ZnO nanowire field-effect transistors.

    PubMed

    Raza, Syed Raza Ali; Lee, Young Tack; Chang, Youn-Gyoung; Jeon, Pyo Jin; Kim, Jae Hoon; Ha, Ryong; Choi, Heon-Jin; Im, Seongil

    2013-02-28

    We have fabricated transparent top-gate ZnO nanowire (NW) field effect transistors (FETs) on glass and measured their trap density-of-states (DOS) at the dielectric/ZnO NW interface with monochromatic photon beams during their operation. Our photon-probe method showed clear signatures of charge trap DOS at the interface, located near 2.3, 2.7, and 2.9 eV below the conduction band edge. The DOS information was utilized for the photo-detecting application of our transparent NW-FETs, which demonstrated fast and sensitive photo-detection of visible lights.

  9. Modification of the optical and structural properties of ZnO nanowires by low-energy Ar+ ion sputtering

    PubMed Central

    2013-01-01

    The effects of low-energy (≤2 kV) Ar+ irradiation on the optical and structural properties of zinc oxide (ZnO) nanowires (NWs) grown by a simple and cost-effective low-temperature technique were investigated. Both photoluminescence spectra from ZnO NW-coated films and cathodoluminescence analysis of individual ZnO NWs demonstrated obvious evidences of ultraviolet/visible luminescent enhancement with respect to irradiation fluence. Annihilation of the thinner ZnO NWs after the ion bombardment was appreciated by means of high-resolution scanning electron microscopy and transmission electron microscopy (TEM), which results in an increasing NW mean diameter for increasing irradiation fluences. Corresponding structural analysis by TEM pointed out not only significant changes in the morphology but also in the microstructure of these NWs, revealing certain radiation-sensitive behavior. The possible mechanisms accounting for the decrease of the deep-level emissions in the NWs with the increasing irradiation fluences are discussed according to their structural modifications. PMID:23570658

  10. Modification of the optical and structural properties of ZnO nanowires by low-energy Ar+ ion sputtering.

    PubMed

    Allah, Rabie Fath; Ben, Teresa; González, David; Hortelano, Vanesa; Martínez, Oscar; Plaza, Jose Luis

    2013-04-09

    The effects of low-energy (≤2 kV) Ar+ irradiation on the optical and structural properties of zinc oxide (ZnO) nanowires (NWs) grown by a simple and cost-effective low-temperature technique were investigated. Both photoluminescence spectra from ZnO NW-coated films and cathodoluminescence analysis of individual ZnO NWs demonstrated obvious evidences of ultraviolet/visible luminescent enhancement with respect to irradiation fluence. Annihilation of the thinner ZnO NWs after the ion bombardment was appreciated by means of high-resolution scanning electron microscopy and transmission electron microscopy (TEM), which results in an increasing NW mean diameter for increasing irradiation fluences. Corresponding structural analysis by TEM pointed out not only significant changes in the morphology but also in the microstructure of these NWs, revealing certain radiation-sensitive behavior. The possible mechanisms accounting for the decrease of the deep-level emissions in the NWs with the increasing irradiation fluences are discussed according to their structural modifications.

  11. Structural and optical properties of ZnMgO nanostructures formed by Mg in-diffused ZnO nanowires

    SciTech Connect

    Pan, C.-J.; Hsu, H.-C.; Cheng, H.-M.; Wu, C.-Y.; Hsieh, W.-F.

    2007-04-15

    ZnMgO nanostructures with wurtzite phase were prepared by thermal diffusion of Mg into the ZnO nanowires. As ZnO light-emitting devices have been operated by using ZnMgO layers as energy barrier layers to confine the carriers, it is essential to realize the characterization of ZnMgO particularly. In this work, the Mg content in Zn{sub 1} {sub -x} Mg {sub x} O alloy determined by X-ray diffraction (XRD) and photoluminescence (PL) shows a good coincidence. The variation of lattice constant and the blueshift of near-band-edge emission indicate that Zn{sup 2+} ions are successfully substituted by Mg{sup 2+} ions in the ZnO lattice. In Raman-scattering studies, the change of E {sub 2}(high) phonon line shape in ZnO:Mg nanostructures reveals the microscopic substitutional disorder. In addition to the host phonons of ZnO, two additional bands around 383 and 510 cm{sup -1} are presumably attributed to the Mg-related vibrational modes. - Graphical abstract: We reported the synthesis of the ZnMgO nanostructures prepared by a simple vapor transport method. Magnesium-related anomalous modes are observed by Raman spectra for the first time in ZnMgO system.

  12. Sandwiched assembly of ZnO nanowires between graphene layers for a self-powered and fast responsive ultraviolet photodetector

    NASA Astrophysics Data System (ADS)

    Deka Boruah, Buddha; Mukherjee, Anwesha; Misra, Abha

    2016-03-01

    A heterostructure of graphene and zinc oxide (ZnO) nanowires (NWs) is fabricated by sandwiching an array of ZnO NWs between two graphene layers for an ultraviolet (UV) photodetector. This unique structure allows NWs to be in direct contact with the graphene layers, minimizing the effect of the substrate or metal electrodes. In this device, graphene layers act as highly conducting electrodes with a high mobility of the generated charge carriers. An excellent sensitivity is demonstrated towards UV illumination, with a reversible photoresponse even for a short period of UV illumination. Response and recovery times of a few milliseconds demonstrated a much faster photoresponse than most of the conventional ZnO nanostructure-based photodetectors. It is shown that the generation of a built-in electric field between the interface of graphene and ZnO NWs effectively contributes to the separation of photogenerated electron-hole pairs for photocurrent generation without applying any external bias. Upon application of external bias voltage, the electric field further increases the drift velocity of photogenerated electrons by reducing the charge recombination rates, and results in an enhancement of the photocurrent. Therefore, the graphene-based heterostructure (G/ZnO NW/G) opens avenues to constructing a novel heterostructure with a combination of two functionally dissimilar materials.

  13. Controllable growth of dendritic ZnO nanowire arrays on a stainless steel mesh towards the fabrication of large area, flexible dye-sensitized solar cells.

    PubMed

    Dai, Hui; Zhou, Yong; Liu, Qi; Li, Zhengdao; Bao, Chunxiong; Yu, Tao; Zhou, Zhigang

    2012-09-07

    Well-defined ZnO nanowire (NW) arrays with controlled dendritic structures were successfully built on a stainless steel mesh and utilized as photoanodes for the fabrication of large-area, flexible dye-sensitized solar cells (DSSCs). The dendritic nanostructure proves favorable for the improvement of the overall light conversion efficiency of the DSSC. An optimized etching time for the affixion of ZnO seeds on the ZnO backbone of the dendritic "tree" and the controlled growth conditions of the branch NW are critical to achieve high conversion efficiency solar cells.

  14. Controllable growth of dendritic ZnO nanowire arrays on a stainless steel mesh towards the fabrication of large area, flexible dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Dai, Hui; Zhou, Yong; Liu, Qi; Li, Zhengdao; Bao, Chunxiong; Yu, Tao; Zhou, Zhigang

    2012-08-01

    Well-defined ZnO nanowire (NW) arrays with controlled dendritic structures were successfully built on a stainless steel mesh and utilized as photoanodes for the fabrication of large-area, flexible dye-sensitized solar cells (DSSCs). The dendritic nanostructure proves favorable for the improvement of the overall light conversion efficiency of the DSSC. An optimized etching time for the affixion of ZnO seeds on the ZnO backbone of the dendritic ``tree'' and the controlled growth conditions of the branch NW are critical to achieve high conversion efficiency solar cells.

  15. Fabrication and characterization of p-Si nanowires/ZnO film heterojunction diode

    NASA Astrophysics Data System (ADS)

    Choi, Ji-Hyuk; Das, Sachindra Nath; Moon, Kyeong-Ju; Kar, Jyoti Prakash; Myoung, Jae-Min

    2010-12-01

    Vertical aligned p-Si nanowires were fabricated by electroless wet chemical etching of Si wafer. p-Si nanowires/ZnO thin film heterojunction diode was fabricated by depositing ZnO thin film on vertically aligned p-Si nanowire arrays. Optical studies revealed that the Si nanowire surface has porous silicon like structure. The junction properties were evaluated by measuring I- V and C- V characteristics. I- V characteristics exhibited well defined rectifying behavior with a turn-on voltage of 2.26 V and ideality factor of 4.5.

  16. Ordered arrays of vertically aligned [110] silicon nanowires by suppressing the crystallographically preferred <100> etching directions.

    PubMed

    Huang, Zhipeng; Shimizu, Tomohiro; Senz, Stephan; Zhang, Zhang; Zhang, Xuanxiong; Lee, Woo; Geyer, Nadine; Gösele, Ulrich

    2009-07-01

    The metal-assisted etching direction of Si(110) substrates was found to be dependent upon the morphology of the deposited metal catalyst. The etching direction of a Si(110) substrate was found to be one of the two crystallographically preferred 100 directions in the case of isolated metal particles or a small area metal mesh with nanoholes. In contrast, the etching proceeded in the vertical [110] direction, when the lateral size of the catalytic metal mesh was sufficiently large. Therefore, the direction of etching and the resulting nanostructures obtained by metal-assisted etching can be easily controlled by an appropriate choice of the morphology of the deposited metal catalyst. On the basis of this finding, a generic method was developed for the fabrication of wafer-scale vertically aligned arrays of epitaxial [110] Si nanowires on a Si(110) substrate. The method utilized a thin metal film with an extended array of pores as an etching catalyst based on an ultrathin porous anodic alumina mask, while a prepatterning of the substrate prior to the metal depostion is not necessary. The diameter of Si nanowires can be easily controlled by a combination of the pore diameter of the porous alumina film and varying the thickness of the deposited metal film.

  17. Chlorine Gas Sensing Performance of On-Chip Grown ZnO, WO3, and SnO2 Nanowire Sensors.

    PubMed

    Tran, Van Dang; Nguyen, Duc Hoa; Nguyen, Van Duy; Nguyen, Van Hieu

    2016-02-01

    Monitoring toxic chlorine (Cl2) at the parts-per-billion (ppb) level is crucial for safe usage of this gas. Herein, ZnO, WO3, and SnO2 nanowire sensors were fabricated using an on-chip growth technique with chemical vapor deposition. The Cl2 gas-sensing characteristics of the fabricated sensors were systematically investigated. Results demonstrated that SnO2 nanowires exhibited higher sensitivity to Cl2 gas than ZnO and WO3 nanowires. The response (RCl2/Rair) of the SnO2 nanowire sensor to 50 ppb Cl2 at 50 °C was about 57. Hence, SnO2 nanowires can be an excellent sensing material for detecting Cl2 gas at the ppb level under low temperatures. Abnormal sensing characteristics were observed in the WO3 and SnO2 nanowire sensors at certain temperatures; in particular, the response level of these sensors to 5 ppm of Cl2 was lower than that to 2.5 ppm of Cl2. The sensing mechanism of the SnO2 nanowire sensor was also elucidated by determining Cl2 responses under N2 and dry air as carrier gases. We proved that the Cl2 molecule was first directly adsorbed on the metal oxide surface and was then substituted for pre-adsorbed oxygen, followed by lattice oxygen.

  18. Correlation between SSM substrate effect and physical properties of ZnO nanowires electrodeposited with or without seed layer for enhanced photoelectrochemical applications

    NASA Astrophysics Data System (ADS)

    Lamouchi, A.; Slimi, B.; Ben Assaker, I.; Gannouni, M.; Chtourou, R.

    2016-06-01

    ZnO nanowires (NWs) were grown vertically by electrodeposition technique on a stainless-steel mesh (SSM) substrate in the presence and absence of seed layer. A new contribution to the knowledge of both substrate nature and seed layer dependence on structural, morphological, optical properties is reported. X-ray diffraction revealed that all the samples are mainly crystallized in the wurtzite ZnO phase. In the presence of seed layer onto the SSM substrate, the crystalline nature of ZnO NWs is improved by the enhancement of intensity in (002) peak, which indicates a preferential orientation along this peak. The scanning electron microscopy (SEM) images show that, in the presence of seed layer, nanowires appear uniform and stand perpendicular to the substrate with hexagonal shape, implying the occurrence of the wurtzite ZnO crystal structure. According to optical measurements, the decrease of the band-gap energy is due mainly to the seed layer effect and the SSM substrate contribution. To investigate the effect of seed layer and SSM substrate, a photoeletrochemical (PEC) analysis of ZnO NWs is performed. The photocurrent density produced by the ZnO NWs/ZnO/SSM electrode reached 0.2mA·cm^-2, about two times higher than that measured on the ZnO NWs/SSM electrode. These results indicate that both seed layer and substrate have great potential in photoelectrochemical devices.

  19. Density Detection of Aligned Nanowire Arrays Using Terahertz Time-Domain Spectroscopy.

    PubMed

    Xiang, Wenfeng; Wang, Xin; Liu, Yuan; Zhang, JiaQi; Zhao, Kun

    2016-12-01

    A rapid technique is necessary to quantitatively detect the density of nanowire (NW) and nanotube arrays in one-dimensional devices which have been identified as useful building blocks for nanoelectronics, optoelectronics, biomedical devices, etc. Terahertz (THz) time-domain spectroscopy was employed in this research to detect the density of aligned Ni NW arrays. The transmitted amplitude of THz peaks and optical thickness of NW arrays was found to be the effective parameters to analyze the density change of NW arrays. Owing to the low multiple scattering and high order of Ni NW arrays, a linear relationship was observed for the transmitted amplitude and optical thickness regarding NW density, respectively. Therefore, THz technique may be used as a promising tool to characterize the density of one-dimensional structures in the large-scale integrated nanodevice fabrication.

  20. Factors affecting the shape of MBE-grown laterally aligned Fe nanowires

    NASA Astrophysics Data System (ADS)

    Lok, Shu K.; Tian, Jia C.; Wang, Yuxing; Lai, Ying H.; Lortz, Rolf; Petrovic, Alexander; Panagopoulos, Christos; Wong, George K. L.; Wang, Gan; Sou, Iam K.

    2012-12-01

    Various microstructural and chemical analysis techniques were applied to study two types (type-A and B) of self-assembled laterally aligned Fe nanowires (NWs) fabricated by molecular beam epitaxy on a ZnS buffer layer. The formation of the three-dimensional shapes of these NWs was found to be driven by the principle of surface energy minimization. We have provided phenomenological models to address the factors affecting the observed topological shape of these NWs, including the role of the lattice relationship between the Fe NWs and the underlying buffer layer, growth temperature, Fe nominal coverage and substrate orientation. Magnetic hysteresis measurements were performed at different temperature, demonstrating the Fe NWs possess a coercivity about 30 times larger than that of a Fe thin film. The observed gradual magnetization reversal indicates the magnetization process is accomplished by the rotation of magnetic moments within a single domain.

  1. Factors affecting the shape of MBE-grown laterally aligned Fe nanowires.

    PubMed

    Lok, Shu K; Tian, Jia C; Wang, Yuxing; Lai, Ying H; Lortz, Rolf; Petrovic, Alexander; Panagopoulos, Christos; Wong, George K L; Wang, Gan; Sou, Iam K

    2012-12-07

    Various microstructural and chemical analysis techniques were applied to study two types (type-A and B) of self-assembled laterally aligned Fe nanowires (NWs) fabricated by molecular beam epitaxy on a ZnS buffer layer. The formation of the three-dimensional shapes of these NWs was found to be driven by the principle of surface energy minimization. We have provided phenomenological models to address the factors affecting the observed topological shape of these NWs, including the role of the lattice relationship between the Fe NWs and the underlying buffer layer, growth temperature, Fe nominal coverage and substrate orientation. Magnetic hysteresis measurements were performed at different temperature, demonstrating the Fe NWs possess a coercivity about 30 times larger than that of a Fe thin film. The observed gradual magnetization reversal indicates the magnetization process is accomplished by the rotation of magnetic moments within a single domain.

  2. High-gain subnanowatt power consumption hybrid complementary logic inverter with WSe2 nanosheet and ZnO nanowire transistors on glass.

    PubMed

    Shokouh, Seyed Hossein Hosseini; Pezeshki, Atiye; Ali Raza, Syed Raza; Lee, Hee Sung; Min, Sung-Wook; Jeon, Pyo Jin; Shin, Jae Min; Im, Seongil

    2015-01-07

    A 1D-2D hybrid complementary logic inverter comprising of ZnO nanowire and WSe2 nanosheet field-effect transistors (FETs) is fabricated on glass, which shows excellent static and dynamic electrical performances with a voltage gain of ≈60, sub-nanowatt power consumption, and at least 1 kHz inverting speed.

  3. Low-Cost and High-Productivity Three-Dimensional Nanocapacitors Based on Stand-Up ZnO Nanowires for Energy Storage

    NASA Astrophysics Data System (ADS)

    Wei, Lei; Liu, Qi-Xuan; Zhu, Bao; Liu, Wen-Jun; Ding, Shi-Jin; Lu, Hong-Liang; Jiang, Anquan; Zhang, David Wei

    2016-04-01

    Highly powered electrostatic capacitors based on nanostructures with a high aspect ratio are becoming critical for advanced energy storage technology because of their high burst power and energy storage capability. We report the fabrication process and the electrical characteristics of high capacitance density capacitors with three-dimensional solid-state nanocapacitors based on a ZnO nanowire template. Stand-up ZnO nanowires are grown face down on p-type Si substrates coated with a ZnO seed layer using a hydrothermal method. Stacks of AlZnO/Al2O3/AlZnO are then deposited sequentially on the ZnO nanowires using atomic layer deposition. The fabricated capacitor has a high capacitance density up to 92 fF/μm2 at 1 kHz (around ten times that of the planar capacitor without nanowires) and an extremely low leakage current density of 3.4 × 10-8 A/cm2 at 2 V for a 5-nm Al2O3 dielectric. Additionally, the charge-discharge characteristics of the capacitor were investigated, indicating that the resistance-capacitance time constants were 550 ns for both the charging and discharging processes and the time constant was not dependent on the voltage. This reflects good power characteristics of the fabricated capacitors. Therefore, the current work provides an exciting strategy to fabricate low-cost and easily processable, high capacitance density capacitors for energy storage.

  4. Optimization of the design of extremely thin absorber solar cells based on electrodeposited ZnO nanowires.

    PubMed

    Lévy-Clément, Claude; Elias, Jamil

    2013-07-22

    The properties of the components of ZnO/CdSe/CuSCN extremely thin absorber (ETA) solar cells based on electrodeposited ZnO nanowires (NWs) were investigated. The goal was to study the influence of their morphology on the characteristics of the solar cells. To increase the energy conversion efficiency of the solar cell, it was generally proposed to increase the roughness factor of the ZnO NW arrays (i.e. to increase the NW length) with the purpose of decreasing the absorber thickness, improving the light scattering, and consequently the light absorption in the ZnO/CdSe NW arrays. However, this strategy increased the recombination centers, which affected the efficiency of the solar cell. We developed another strategy that acts on the optical configuration of the solar cells by increasing the diameter of the ZnO NW (from 100 to 330 nm) while maintaining a low roughness factor. We observed that the scattering of the ZnO NW arrays occurred over a large wavelength range and extended closer to the CdSe absorber bandgap, and this led to an enhancement in the effective absorption of the ZnO/CdSe NW arrays and an increase in the solar cell characteristics. We found that the thicknesses of CuSCN above the ZnO/CdSe NW tips and the CdSe coating layer were optimized at 1.5 μm and 30 nm, respectively. Optimized ZnO/CdSe/CuSCN solar cells exhibiting 3.2% solar energy conversion efficiency were obtained by using 230 nm diameter ZnO NWs.

  5. Determination of the natural frequency of a cantilevered ZnO nanowire resonantly excited by a sinusoidal electric field.

    PubMed

    Shi, Y; Chen, C Q; Zhang, Y S; Zhu, J; Yan, Y J

    2007-02-21

    The electric-field-induced mechanical resonance of an individual nanotube (NT) or nanowire (NW) has been utilized as a versatile technique for in situ measurement of the Young's modulus of the NT/NW in electron microscopes. The key step of this technique is to determine the fundamental natural frequency of the NT/NW. However, the emergence of super- and/or sub-harmonic resonances might make the determination uncertain. This paper investigates the resonance behaviour of ZnO NWs in a nanotip-nanowire system in order to clarify this obscurity. It is found that forced and parametric resonance are two basic modes of the observed multi-frequency resonances and that each mode exhibits a distinct characteristic. By controlling the driving force exerted on the NW to be either lateral or axial, the two otherwise entangled modes are clearly separated. Based on this resonance mode separation, a criterion for identifying the natural frequency of ZnO NWs is proposed.

  6. Enhancement of Interface Characteristics of Neural Probe Based on Graphene, ZnO Nanowires, and Conducting Polymer PEDOT.

    PubMed

    Ryu, Mingyu; Yang, Jae Hoon; Ahn, Yumi; Sim, Minkyung; Lee, Kyung Hwa; Kim, Kyungsoo; Lee, Taeju; Yoo, Seung-Jun; Kim, So Yeun; Moon, Cheil; Je, Minkyu; Choi, Ji-Woong; Lee, Youngu; Jang, Jae Eun

    2017-03-29

    In the growing field of brain-machine interface (BMI), the interface between electrodes and neural tissues plays an important role in the recording and stimulation of neural signals. To minimize tissue damage while retaining high sensitivity, a flexible and a smaller electrode with low impedance is required. However, it is a major challenge to reduce electrode size while retaining the conductive characteristics of the electrode. In addition, the mechanical mismatch between stiff electrodes and soft tissues creates damaging reactive tissue responses. Here, we demonstrate a neural probe structure based on graphene, ZnO nanowires, and conducting polymer that provides flexibility and low impedance performance. A hybrid Au and graphene structure was utilized to achieve both flexibility and good conductivity. Using ZnO nanowires to increase the effective surface area drastically decreased the impedance value and enhanced the signal-to-noise ratio (SNR). A poly[3,4-ethylenedioxythiophene] (PEDOT) coating on the neural probe improved the electrical characteristics of the electrode while providing better biocompatibility. In vivo neural signal recordings showed that our neural probe can detect clearer signals.

  7. Hierarchical growth of TiO2 nanosheets on anodic ZnO nanowires for high efficiency dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Miles, David O.; Lee, Chang Soo; Cameron, Petra J.; Mattia, Davide; Kim, Jong Hak

    2016-09-01

    We present a novel route to hierarchical core-shell structures consisting of an anodic ZnO nanowire core surrounded by a shell of TiO2 nanosheets (ZNW@TNS). This material combines the beneficial properties of enhanced electron transport, provided by the nanowire core, with the high surface area and chemical stability of the TiO2 shell. Quasi-solid-state dye-sensitized solar cells (qssDSSCs) are prepared using different quantities of either the bare ZnO nanowires or the hierarchical nanowire structures and the effect on cell performance is examined. It is found that whilst the addition of the bare ZnO nanowires results in a decrease in cell performance, significant improvements can be achieved with the addition of small quantities of the hierarchical structures. Power conversion efficiencies of up to 7.5% are achieved under 1 Sun, AM 1.5 simulated sunlight, with a ∼30% increase compared to non-hierarchical mesoporous TiO2 films. A solid-state DSSC (ssDSSC) with a single component solid polymer also exhibits excellent efficiency of 7.2%. The improvement in cell performance is related to the improved light scattering, surface area and electron transport properties via the use of reflectance spectroscopy, BET surface area measurements and electrochemical impedance spectroscopy.

  8. Chromium inhibition and size-selected Au nanocluster catalysis for the solution growth of low-density ZnO nanowires

    PubMed Central

    Errico, Vito; Arrabito, Giuseppe; Plant, Simon R.; Medaglia, Pier Gianni; Palmer, Richard E.; Falconi, Christian

    2015-01-01

    The wet chemical synthesis of nanostructures has many crucial advantages over high-temperature methods, including simplicity, low-cost, and deposition on almost arbitrary substrates. Nevertheless, the density-controlled solution growth of nanowires still remains a challenge, especially at the low densities (e.g. 1 to 10 nanowires/100 μm2) required, as an example, for intracellular analyses. Here, we demonstrate the solution-growth of ZnO nanowires using a thin chromium film as a nucleation inhibitor and Au size-selected nanoclusters (SSNCs) as catalytic particles for which the density and, in contrast with previous reports, size can be accurately controlled. Our results also provide evidence that the enhanced ZnO hetero-nucleation is dominated by Au SSNCs catalysis rather than by layer adaptation. The proposed approach only uses low temperatures (≤70 °C) and is therefore suitable for any substrate, including printed circuit boards (PCBs) and the plastic substrates which are routinely used for cell cultures. As a proof-of-concept we report the density-controlled synthesis of ZnO nanowires on flexible PCBs, thus opening the way to assembling compact intracellular-analysis systems, including nanowires, electronics, and microfluidics, on a single substrate. PMID:26202588

  9. In Situ X-ray Absorption Near-Edge Structure Spectroscopy of ZnO Nanowire Growth During Chemical Bath Deposition

    SciTech Connect

    McPeak, Kevin M.; Becker, Matthew A.; Britton, Nathan G.; Majidi, Hasti; Bunker, Bruce A.; Baxter, Jason B.

    2010-12-03

    Chemical bath deposition (CBD) offers a simple and inexpensive route to deposit semiconductor nanostructures, but lack of fundamental understanding and control of the underlying chemistry has limited its versatility. Here we report the first use of in situ X-ray absorption spectroscopy during CBD, enabling detailed investigation of both reaction mechanisms and kinetics of ZnO nanowire growth from zinc nitrate and hexamethylenetetramine (HMTA) precursors. Time-resolved X-ray absorption near-edge structure (XANES) spectra were used to quantify Zn(II) speciation in both solution and solid phases. ZnO crystallizes directly from [Zn(H{sub 2}O){sub 6}]{sup 2+} without long-lived intermediates. Using ZnO nanowire deposition as an example, this study establishes in situ XANES spectroscopy as an excellent quantitative tool to understand CBD of nanomaterials.

  10. Electrochemical Characterization of CdSe-Coated ZnO Nanowire Extremely-Thin-Absorber Solar Cells

    NASA Astrophysics Data System (ADS)

    Jones, Treavor Zachary

    Four different CdSe-coated nanostructured ZnO ETA configurations as photoelectrochemical cells with polysulfide electrolyte were studied using both conventional and electrochemical characterization techniques. ETA configurations with different ZnO nanowire lengths of 500 nm and 1000 nm were varied with different CdSe absorber-layer thicknesses of 15 nm and 45 nm to examine the effects on PV performance, carrier transport, and carrier recombination. Linear-sweep voltammetry (J-V) measurements showed that longer ZnO nanowires with thinner CdSe absorber layers gave better PV performance with the 1000 nm length/15 nm CdSe thickness samples having the highest JSC ˜4.4 mA/cm2, VOC ˜0.38 V, Pmax ˜0.52 mW/cm2, and second-highest FF ˜0.32. Mott-Schottky (MS) analysis was performed on individual ETA-layer materials to obtain estimates of their ND and VFB for insight into how individual layers in an ETA cell can assist in carrier separation. MS results were shown to be irrespective of illumination, exposed area, or the electrolyte used. Annealed ZnO nanowires had an ND ˜2x10 19 cm-3, a VFB ˜(-0.4) V. versus Ag/AgCl, and were observed to be n-type. MS analysis of planar CdSe showed it to be slightly n-type and gave parameter estimates of ND ˜3x10 17 cm-3 and VFB ˜-1.1 V v. Ag/AgCl, which were also used to calculate its VBI to be ˜0.4 V, and its depletion width, W to be ˜44 nm. Carrier transport studies were performed using IMPS and photocurrent decay measurements to estimate the time constant for carrier transport, with the fastest observed for shorter nanowires and thicker CdSe absorber layers at ˜10 micros. Carrier recombination studies were also performed using IMVS, photovoltage decay, and EIS measurements to estimate the time constant for carrier recombination, with the slowest estimated for the samples with 45 nm CdSe thickness samples at ˜100 ms. Therefore, shorter nanowires with thicker CdSe absorber layers showed the best potential for improving carrier

  11. Robust nonsticky superhydrophobicity by the tapering of aligned ZnO nanorods.

    PubMed

    Tian, Jian; Zhang, Yaping; Zhu, Jie; Yang, Zhongzhen; Gao, Xuefeng

    2014-04-04

    The robust nonsticky superhydrophobicity of aligned nanoneedle films is reported. A facile, efficient, cheap, and available method based on the diffusion-limited crystal growth principle is proposed for controlling the tapering of ZnO nanorods, the profiles of which can be tuned effectively by synergetic control over reaction time and temperature in an extremely strong alkaline reaction system. The synthesized nanoneedle, nanopencil, and nanorod arrays are chosen for studying the effects of nanoscale topography on anti-droplet-sticking ability. After silanization, all of them show excellent quasi-static anti-droplet-stickiness, and water adhesion along the normal and lateral directions can be greatly reduced by the tapering of nanorods and eliminated by sharp nanoneedles. However, their antisticking stability is distinct under the droplet impact: the nanoneedle sample is still nonsticky but the nanorod sample loses its antisticking ability. Only ensuring the liquid/air interface is in the suspended nonwetting state is insufficient to obtain robust nonsticky surfaces, which also require extremely low solid-liquid van der Waals attraction.

  12. Development of vertically aligned ZnO-nanowires scintillators for high spatial resolution x-ray imaging

    SciTech Connect

    Kobayashi, Masakazu Komori, Jun; Shimidzu, Kaiji; Izaki, Masanobu; Uesugi, Kentaro; Takeuchi, Akihisa; Suzuki, Yoshio

    2015-02-23

    Newly designed scintillator of (0001)-oriented ZnO vertical nanowires (vnws) for X-ray imaging was prepared on a Ga-doped ZnO/soda-lime glass by electrodeposition, and the light emission feature was estimated in a synchrotron radiation facility. The ZnO-vnws scintillator revealed a strong light emission and improved resolution on CMOS image compared with that for the ZnO-layer scintillator, although the light emission performance was deteriorated in comparison to the Lu{sub 3}Al{sub 5}O{sub 12:}Ce{sup 3+}. The light emission property closely related to the nanostructure and the resultant photoluminescence characteristic.

  13. Self-aligned nanoforest in silicon nanowire for sensitive conductance modulation.

    PubMed

    Seol, Myeong-Lok; Ahn, Jae-Hyuk; Choi, Ji-Min; Choi, Sung-Jin; Choi, Yang-Kyu

    2012-11-14

    A self-aligned and localized nanoforest structure is constructed in a top-down fabricated silicon nanowire (SiNW). The surface-to-volume ratio (SVR) of the SiNW is enhanced due to the local nanoforest formation. The conductance modulation property of the SiNWs, which is an important characteristic in sensor and charge transfer based applications, can be largely enhanced. For the selective modification of the channel region, localized Joule-heating and subsequent metal-assisted chemical etching (mac-etch) are employed. The nanoforest is formed only in the channel region without misalignment due to the self-aligned process of Joule-heating. The modified SiNW is applied to a porphyrin-silicon hybrid device to verify the enhanced conductance modulation. The charge transfer efficiency between the porphyrin and the SiNW, which is caused by external optical excitation, is clearly increased compared to the initial SiNW. The effect of the local nanoforest formation is enhanced when longer etching times and larger widths are used.

  14. Fabricating vertically aligned sub-20 nm Si nanowire arrays by chemical etching and thermal oxidation.

    PubMed

    Li, Luping; Fang, Yin; Xu, Cheng; Zhao, Yang; Zang, Nanzhi; Jiang, Peng; Ziegler, Kirk J

    2016-04-22

    Silicon nanowires (SiNWs) are appealing building blocks in various applications, including photovoltaics, photonics, and sensors. Fabricating SiNW arrays with diameters <100 nm remains challenging through conventional top-down approaches. In this work, chemical etching and thermal oxidation are combined to fabricate vertically aligned, sub-20 nm SiNW arrays. Defect-free SiNWs with diameters between 95 and 200 nm are first fabricated by nanosphere (NS) lithography and chemical etching. The key aspects for defect-free SiNW fabrication are identified as: (1) achieving a high etching selectivity during NS size reduction; (2) retaining the circular NS shape with smooth sidewalls; and (3) using a directional metal deposition technique. SiNWs with identical spacing but variable diameters are demonstrated by changing the reactive ion etching power. The diameter of the SiNWs is reduced by thermal oxidation, where self-limiting oxidation is encountered after oxidizing the SiNWs at 950 °C for 1 h. A second oxidation is performed to achieve vertically aligned, sub-20 nm SiNW arrays. Si/SiO2 core/shell NWs are obtained before removing the oxidized shell. HRTEM imaging shows that the SiNWs have excellent crystallinity.

  15. Hybrid-type quantum-dot cosensitized ZnO nanowire solar cell with enhanced visible-light harvesting.

    PubMed

    Kim, Heejin; Jeong, Hyuncheol; An, Tae Kyu; Park, Chan Eon; Yong, Kijung

    2013-01-23

    A polymer hybrid quantum-dot-sensitized solar cell was developed using CdSe/CdS/ZnO nanowires as a photoanode and regioregular P3HT as a conjugated polymer. The P3HT polymer was used as a hole transport material to replace the liquid electrolyte in quantum dot sensitized solar cells, CdSe/CdS acts as a cosensitizer, which enhances light harvesting in the visible range, and the ZnO nanowires provide a direct pathway for electron transport. Through an adequate cascade bandgap structure of the photoanode, the photoexcited electrons were effectively separated from the electron/hole pairs and transported under illumination. The remaining holes at the anode were transported by the conjugated polymer P3HT without any intermediate potential loss. The fabrication of the hybrid solar cell was optimized with various experimental conditions, including the length of the ZnO nanowires, quantum sensitizers, P3HT filling conditions, and electrolytes. The optimally obtained hybrid solar cells exhibited 1.5% power-conversion efficiency under AM 1.5G of 100 mW/cm(2) intensity. The fabricated hybrid cells exhibited highly durable cell performances, even after 1 month under atmospheric conditions, whereas the liquid junction quantum dot sensitized solar cells exhibited a significant degradation in their performances during the first 2 weeks immediately after fabrication. High open-circuit voltage and fill factor values of our hybrid quantum-dot-sensitized solar cell indicate that the applied hole transport layer efficiently dissociates electron/hole pairs at the interface and retards the interfacial charge recombination.

  16. Effect of TiO2 thickness on nanocomposited aligned ZnO nanorod/TiO2 for dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Saurdi, I.; Shafura, A. K.; Azhar, N. E. A.; Ishak, A.; Malek, M. F.; Alrokayan, A. H. Salman; Khan, Haseeb A.; Mamat, M. H.; Rusop, M.

    2016-07-01

    The TiO2 films were deposited on glass substrate at different thicknesses with different deposition frequencies (1, 2, 3 and 4 times) using spin coating technique and their structural properties were investigated. Subsequently, the nanocomposited aligned ZnO nanorods and TiO2 were formed by deposited the TiO2 on top of aligned ZnO Nanorod on ITO-coated glass at different thicknesses using the same method of TiO2 deposited on glass substrate. The nanocomposited aligned ZnO nanorod/TiO2 were coated with different thicknesses of 900µm, 1815µm, 2710µm, 3620µm and ZnO without TiO2. The dye-sensitized solar cells were fabricated from the nanocomposited aligned ZnO nanorod/TiO2 with thickness of 900µm, 1815µm, 2710µm and 3620µm and ZnO without TiO2 and their photovoltaic properties of the DSSCs were investigated. From the solar simulator measurement the solar energy conversion efficiency (η) of 2.543% under AM 1.5 was obtained for the ZnO nanorod/TiO2 photoanode-2710µm Dye-Sensitized solar cell.

  17. Au@CdS Core–Shell Nanoparticles‐Modified ZnO Nanowires Photoanode for Efficient Photoelectrochemical Water Splitting

    PubMed Central

    Guo, Chun Xian; Xie, Jiale; Yang, Hongbin

    2015-01-01

    Hydrogen production from water splitting using solar energy based on photoelectrochemical (PEC) cells has attracted increasing attention because it leaves less of a carbon footprint and has economic superiority of solar and hydrogen energy. Oxide semiconductors such as ZnO possessing high stability against photocorrosion in hole scavenger systems have been widely used to build photoanodes of PEC cells but under visible light their conversion efficiencies with respect to incident‐photon‐to‐current conversion efficiency (IPCE) measured without external bias are still not satisfied. An innovative way is presented here to significantly improve the conversion efficiency of PEC cells by constructing a core–shell structure‐based photoanode comprising Au@CdS core–shell nanoparticles on ZnO nanowires (Au@CdS‐ZnO). The Au core offers strong electronic interactions with both CdS and ZnO resulting in a unique nanojunction to facilitate charge transfer. The Au@CdS‐ZnO PEC cell under 400 nm light irradiation without any applied bias provides an IPCE of 14.8%. Under AM1.5 light illumination with a bias of 0.4 V, the Au@CdS‐ZnO PEC cell produces H2 at a constant rate of 11.5 μmol h−1 as long as 10 h. This work provides a fundamental insight to improve the conversion efficiency for visible light in water splitting. PMID:27980921

  18. Synthesis of Highly Stable Silver-Loaded Vertical ZnO Nanowires Array and its Acetylene Sensing Properties

    NASA Astrophysics Data System (ADS)

    Uddin, Abu Sadat Mohammad Iftekhar; Chung, Gwiy-Sang

    2016-09-01

    A silver-loaded one-dimensional (1D) vertical ZnO nanowires (NWs) array synthesized by a facile seed mediated hydrothermal-RF magnetron sputtering method has been investigated for the fabrication of a highly stable and reproducible acetylene (C2H2) gas sensor. Successful immobilization of silver nanoparticles (NPs) as a sensitizer on the ZnO NWs array significantly enhanced the C2H2 sensing properties and showed a stable sensing performance. The grown structure exhibited high response magnitude (30.8 at 1000ppm), short response time (43s) and excellent selectivity at 220∘C. The enhanced performance can probably be accounted for the effect of combining the highly orientated ZnO NWs and catalytically active silver-based network. The superior sensing features toward C2H2 along with broad detection range (1-1000ppm), outstanding stability and excellent reproducibility indicate that the sensor is a promising candidate for practical applications.

  19. Piezotronic-effect enhanced drug metabolism and sensing on a single ZnO nanowire surface with the presence of human cytochrome P450.

    PubMed

    Wang, Ning; Gao, Caizhen; Xue, Fei; Han, Yu; Li, Tao; Cao, Xia; Zhang, Xueji; Zhang, Yue; Wang, Zhong Lin

    2015-03-24

    Cytochromes P450 (CYPs) enzymes are involved in catalyzing the metabolism of various endogenous and exogenous compounds. A rapid analysis of drug metabolism reactions by CYPs is required because they can metabolize 95% of current drugs in drug development and effective therapies. Here, we describe a study of piezotronic-effect enhanced drug metabolism and sensing by utilizing a single ZnO nanowire (ZnO NW) device. Owing to the unique hydrophobic feature of a ZnO NW that provides a desirable "microenvironment" for the immobilization of biomolecules, our device can effectively stimulate the tolbutamide metabolism by decorating a ZnO NW with cytochrome P4502C9/CYPs reductase (CYP2C9/CPR) microsomes. By applying an external compressive strain to the ZnO nanowire, the piezotronic effect, which plays a primary role in tuning the transport behavior of a ZnO NW utilizing the created piezoelectric polarization charges at the local interface, can effectively enhance the performance of the device. A theoretical model is proposed using an energy band diagram to explain the experimental data. This study provides a potential approach to study drug metabolism and trace drug detection based on the piezotronic effect.

  20. Nanofabrication of arrays of silicon field emitters with vertical silicon nanowire current limiters and self-aligned gates

    NASA Astrophysics Data System (ADS)

    Guerrera, S. A.; Akinwande, A. I.

    2016-07-01

    We developed a fabrication process for embedding a dense array (108 cm-2) of high-aspect-ratio silicon nanowires (200 nm diameter and 10 μm tall) in a dielectric matrix and then structured/exposed the tips of the nanowires to form self-aligned gate field emitter arrays using chemical mechanical polishing (CMP). Using this structure, we demonstrated a high current density (100 A cm-2), uniform, and long lifetime (>100 h) silicon field emitter array architecture in which the current emitted by each tip is regulated by the silicon nanowire current limiter connected in series with the tip. Using the current voltage characteristics and with the aid of numerical device models, we estimated the tip radius of our field emission arrays to be ≈4.8 nm, as consistent with the tip radius measured using a scanning electron microscope (SEM).

  1. Construction of 1D SnO2-coated ZnO nanowire heterojunction for their improved n-butylamine sensing performances.

    PubMed

    Wang, Liwei; Li, Jintao; Wang, Yinghui; Yu, Kefu; Tang, Xingying; Zhang, Yuanyuan; Wang, Shaopeng; Wei, Chaoshuai

    2016-10-13

    One-dimensional (1D) SnO2-coated ZnO nanowire (SnO2/ZnO NW) N-N heterojunctions were successfully constructed by an effective solvothermal treatment followed with calcination at 400 °C. The obtained samples were characterized by means of XRD, SEM, TEM, Scanning TEM coupled with EDS and XPS analysis, which confirmed that the outer layers of N-type SnO2 nanoparticles (avg. 4 nm) were uniformly distributed onto our pre-synthesized n-type ZnO nanowire supports (diameter 80~100 nm, length 12~16 μm). Comparisons of the gas sensing performances among pure SnO2, pure ZnO NW and the as-fabricated SnO2/ZnO NW heterojunctions revealed that after modification, SnO2/ZnO NW based sensor exhibited remarkably improved response, fast response and recovery speeds, good selectivity and excellent reproducibility to n-butylamine gas, indicating it can be used as promising candidates for high-performance organic amine sensors. The enhanced gas-sensing behavior should be attributed to the unique 1D wire-like morphology of ZnO support, the small size effect of SnO2 nanoparticles, and the semiconductor depletion layer model induced by the strong interfacial interaction between SnO2 and ZnO of the heterojunctions. The as-prepared SnO2/ZnO NW heterojunctions may also supply other novel applications in the fields like photocatalysis, lithium-ion batteries, waste water purification, and so on.

  2. Construction of 1D SnO2-coated ZnO nanowire heterojunction for their improved n-butylamine sensing performances

    NASA Astrophysics Data System (ADS)

    Wang, Liwei; Li, Jintao; Wang, Yinghui; Yu, Kefu; Tang, Xingying; Zhang, Yuanyuan; Wang, Shaopeng; Wei, Chaoshuai

    2016-10-01

    One-dimensional (1D) SnO2-coated ZnO nanowire (SnO2/ZnO NW) N-N heterojunctions were successfully constructed by an effective solvothermal treatment followed with calcination at 400 °C. The obtained samples were characterized by means of XRD, SEM, TEM, Scanning TEM coupled with EDS and XPS analysis, which confirmed that the outer layers of N-type SnO2 nanoparticles (avg. 4 nm) were uniformly distributed onto our pre-synthesized n-type ZnO nanowire supports (diameter 80~100 nm, length 12~16 μm). Comparisons of the gas sensing performances among pure SnO2, pure ZnO NW and the as-fabricated SnO2/ZnO NW heterojunctions revealed that after modification, SnO2/ZnO NW based sensor exhibited remarkably improved response, fast response and recovery speeds, good selectivity and excellent reproducibility to n-butylamine gas, indicating it can be used as promising candidates for high-performance organic amine sensors. The enhanced gas-sensing behavior should be attributed to the unique 1D wire-like morphology of ZnO support, the small size effect of SnO2 nanoparticles, and the semiconductor depletion layer model induced by the strong interfacial interaction between SnO2 and ZnO of the heterojunctions. The as-prepared SnO2/ZnO NW heterojunctions may also supply other novel applications in the fields like photocatalysis, lithium-ion batteries, waste water purification, and so on.

  3. Construction of 1D SnO2-coated ZnO nanowire heterojunction for their improved n-butylamine sensing performances

    PubMed Central

    Wang, Liwei; Li, Jintao; Wang, Yinghui; Yu, Kefu; Tang, Xingying; Zhang, Yuanyuan; Wang, Shaopeng; Wei, Chaoshuai

    2016-01-01

    One-dimensional (1D) SnO2-coated ZnO nanowire (SnO2/ZnO NW) N-N heterojunctions were successfully constructed by an effective solvothermal treatment followed with calcination at 400 °C. The obtained samples were characterized by means of XRD, SEM, TEM, Scanning TEM coupled with EDS and XPS analysis, which confirmed that the outer layers of N-type SnO2 nanoparticles (avg. 4 nm) were uniformly distributed onto our pre-synthesized n-type ZnO nanowire supports (diameter 80~100 nm, length 12~16 μm). Comparisons of the gas sensing performances among pure SnO2, pure ZnO NW and the as-fabricated SnO2/ZnO NW heterojunctions revealed that after modification, SnO2/ZnO NW based sensor exhibited remarkably improved response, fast response and recovery speeds, good selectivity and excellent reproducibility to n-butylamine gas, indicating it can be used as promising candidates for high-performance organic amine sensors. The enhanced gas-sensing behavior should be attributed to the unique 1D wire-like morphology of ZnO support, the small size effect of SnO2 nanoparticles, and the semiconductor depletion layer model induced by the strong interfacial interaction between SnO2 and ZnO of the heterojunctions. The as-prepared SnO2/ZnO NW heterojunctions may also supply other novel applications in the fields like photocatalysis, lithium-ion batteries, waste water purification, and so on. PMID:27734963

  4. Charge-Separation Kinetics of Photoexcited Oxygen Vacancies in ZnO Nanowire Field-Effect Transistors

    NASA Astrophysics Data System (ADS)

    Lu, Ming-Pei; Chen, Chieh-Wei; Lu, Ming-Yen

    2016-11-01

    Photoinduced atomic structural transitions of negative-U defects: neutral oxygen vacancies (VO 0 ), accompanied by lattice relaxation, can form ionized 1 + and 2 + vacancy defects in ZnO materials, giving rise to an optoelectronic phenomenon named "persistent photoconductivity," thereby limiting the applications of ZnO materials in optoelectronic fields. Nevertheless, very little is known about the kinetics of the separation-recombination interactions between an electron and an ionized oxygen vacancy, constituting a photoexcited charge pair, in nanoscale ZnO material systems, especially when considering the effect of electric fields. In this report, we describe the charge-separation kinetics of photoexcited VO 0 defects in ZnO nanowire (NW) field-effect transistor (FET) systems, examined through modulation of the surface electric field of the ZnO NW. We apply oxygen plasma treatment to tailor the doping concentration within the ZnO NWs with the goal of modulating the electric field within their surface space-charge layers. X-ray photoelectron spectroscopy and low-frequency current-noise spectroscopy are applied to identify the change in the density of oxygen-vacancy defects near the NW surface after oxygen plasma treatment. A model describing the initial stage of the photoconductance responses associated with the formation of the photoinduced ionized 1 + state of the oxygen-vacancy defects (VO + ) in the fully depleted ZnO NW FETs in the low-photoconductance regime upon UV excitation is proposed to extract the charge-separation probabilities of the photoexcited electron/VO + pair. Accordingly, the charge-separation probability increases from approximately 0.0012 to 0.042 upon increasing the electric field at the NW surface from approximately 7.5 ×106 to 5.0 ×107 V m-1 . Moreover, we employ modified Braun empirical theory to model the effect of the electric field on the charge-separation behavior of photoexcited electron/VO + pairs in ZnO NWs, obtaining a

  5. Solution-processed Cu2ZnSnS4 superstrate solar cell using vertically aligned ZnO nanorods.

    PubMed

    Lee, Dongwook; Yong, Kijung

    2014-02-14

    One-dimensional (1D) zinc oxide (ZnO) nanostructures are considered to be promising materials for use in thin film solar cells because of their high light harvesting and charge collection efficiencies. We firstly report enhanced photovoltaic performances in Cu2ZnSnS4 (CZTS) thin film solar cells prepared using ZnO nanostructures. A CdS-coated, vertically well-aligned ZnO nanorod (NR) array was prepared via a hydrothermal reaction and nanocrystal layer deposition (NCLD) and was used as a transparent window/buffer layer in a CZTS thin film photovoltaic. A light absorber CZTS thin film was prepared on the CdS/ZnO NRs in air by depositing a non-toxic precursor solution that was annealed in two steps at temperatures up to 250 °C. The crystallized CZTS phase completely infiltrated the CdS/ZnO NR array. The nanostructured ZnO array provided improved light harvesting behavior compared to a thin film configuration by measuring UV-vis transmittance spectroscopy. The prepared CZTS/CdS/ZnO NR device exhibited a solar energy conversion efficiency of 1.2%, which is the highest efficiency yet reported for nanostructured superstrate CZTS solar cells.

  6. Low-temperature growth of aligned ZnO nanorods: effect of annealing gases on the structural and optical properties.

    PubMed

    Umar, Ahmad; Hahn, Yoon-Bong; Al-Hajry, A; Abaker, M

    2014-06-01

    Aligned ZnO nanorods were grown on ZnO/Si substrate via simple aqueous solution process at low-temperature of - 65 degrees C by using zinc nitrate and hexamethylenetetramine (HMTA). The detailed morphological and structural properties measured by FESEM, XRD, EDS and TEM confirmed that the as-grown nanorods are vertically aligned, well-crystalline possessing wurtzite hexagonal phase and grown along the [0001] direction. The room-temperature photoluminescence spectrum of the grown nanorods exhibited a strong and broad green emission and small ultraviolet emission. The as-prepared ZnO nanorods were post-annealed in nitrogen (N2) and oxygen (O2) environments and further characterized in terms of their morphological, structural and optical properties. After annealing the nanorods exhibit well-crystallinity and wurtzite hexagonal phase. Moreover, by annealing the PL spectra show the enhancement in the UV emission and suppression in the green emission. The presented results demonstrate that simply by post-annealing process, the optical properties of ZnO nanostructures can be controlled.

  7. Inorganic/organic hybrid solar cells: optimal carrier transport in vertically aligned silicon nanowire arrays

    NASA Astrophysics Data System (ADS)

    Sato, Keisuke; Dutta, Mrinal; Fukata, Naoki

    2014-05-01

    Inorganic/organic hybrid radial heterojunction solar cells that combine vertically-aligned n-type silicon nanowires (SiNWs) with poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) have great potential for replacing commercial Si solar cells. The chief advantage of such solar cells is that they exhibit higher absorbance for a given thickness than commercial Si solar cells, due to incident light-trapping within the NW arrays, thus enabling lower-cost solar cell production. We report herein on the effects of NW length, annealing and surface electrode on the device performance of SiNW/PEDOT:PSS hybrid radial heterojunction solar cells. The power conversion efficiency (PCE) of the obtained SiNW/PEDOT:PSS hybrid solar cells can be optimized by tuning the thickness of the surface electrode, and the etching conditions during NW formation and post-annealing. The PCE of 9.3% is obtained by forming efficient transport pathways for photogenerated charge carriers to electrodes. Our approach is a significant contribution to design of high-performance and low-cost inorganic/organic hybrid heterojunction solar cells.Inorganic/organic hybrid radial heterojunction solar cells that combine vertically-aligned n-type silicon nanowires (SiNWs) with poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) have great potential for replacing commercial Si solar cells. The chief advantage of such solar cells is that they exhibit higher absorbance for a given thickness than commercial Si solar cells, due to incident light-trapping within the NW arrays, thus enabling lower-cost solar cell production. We report herein on the effects of NW length, annealing and surface electrode on the device performance of SiNW/PEDOT:PSS hybrid radial heterojunction solar cells. The power conversion efficiency (PCE) of the obtained SiNW/PEDOT:PSS hybrid solar cells can be optimized by tuning the thickness of the surface electrode, and the etching conditions during NW formation and

  8. Individual ZnO nanowires for photodetectors with wide response range from solar-blind ultraviolet to near-infrared modulated by bias voltage and illumination intensity.

    PubMed

    Cheng, Baochang; Xu, Jian; Ouyang, Zhiyong; Xie, Cuicui; Su, Xiaohui; Xiao, Yanhe; Lei, Shuijin

    2013-12-02

    ZnO nanowires have relatively high sensitivity as ultraviolet (UV) photodetectors, while the bandgap of 3.37 eV is an important limitation for their applications in solar-blind UV (SBUV), visible (VIS) and near infrared (NIR) range. Besides UV response, in this study, we demonstrate the promising applications of individual undoped ZnO NWs as high performance SBUV-VIS-NIR broad-spectral-response photodetectors, strongly depended on applied bias voltage and illumination intensity. The dominant mechanism is attributed to the existence of surface states in nanostructured ZnO. At a negative bias voltage electrons can be injected into surface states from electrode, and moreover, under light illumination photogenerated electron-hole pairs can be separated efficiently by surface built-in electric field, resulting into a decrease of potential barrier height and depletion region width, and simultaneously accompanying a filling of oxygen vacancy and a rise of ZnO Fermi level.

  9. Probing the highly efficient room temperature ammonia gas sensing properties of a luminescent ZnO nanowire array prepared via an AAO-assisted template route.

    PubMed

    Kumar, Nagesh; Srivastava, A K; Nath, R; Gupta, Bipin Kumar; Varma, G D

    2014-04-21

    Here, we report the facile synthesis of a highly ordered luminescent ZnO nanowire array using a low temperature anodic aluminium oxide (AAO) template route which can be economically produced in large scale quantity. The as-synthesized nanowires have diameters ranging from 60 to 70 nm and length ∼11 μm. The photoluminescence spectrum reveals that the AAO/ZnO assembly has a strong green emission peak at 490 nm upon excitation at a wavelength of 406 nm. Furthermore, the ZnO nanowire array-based gas sensor has been fabricated by a simple micromechanical technique and its NH3 gas sensing properties have been explored thoroughly. The fabricated gas sensor exhibits excellent sensitivity and fast response to NH3 gas at room temperature. Moreover, for 50 ppm NH3 concentration, the observed value of sensitivity is around 68%, while the response and recovery times are 28 and 29 seconds, respectively. The present synthesis technique to produce a highly ordered ZnO nanowire array and a fabricated gas sensor has great potential to push the low cost gas sensing nanotechnology.

  10. Self-assembly and hierarchical patterning of aligned organic nanowire arrays by solvent evaporation on substrates with patterned wettability.

    PubMed

    Bao, Rong-Rong; Zhang, Cheng-Yi; Zhang, Xiu-Juan; Ou, Xue-Mei; Lee, Chun-Sing; Jie, Jian-Sheng; Zhang, Xiao-Hong

    2013-06-26

    The controlled growth and alignment of one-dimensional organic nanostructures at well-defined locations considerably hinders the integration of nanostructures for electronic and optoelectronic applications. Here, we demonstrate a simple process to achieve the growth, alignment, and hierarchical patterning of organic nanowires on substrates with controlled patterns of surface wettability. The first-level pattern is confined by the substrate patterns of wettability. Organic nanostructures are preferentially grown on solvent wettable regions. The second-level pattern is the patterning of aligned organic nanowires deposited by controlling the shape and movement of the solution contact lines during evaporation on the wettable regions. This process is controlled by the cover-hat-controlled method or vertical evaportation method. Therefore, various new patterns of organic nanostructures can be obtained by combing these two levels of patterns. This simple method proves to be a general approach that can be applied to other organic nanostructure systems. Using the as-prepared patterned nanowire arrays, an optoelectronic device (photodetector) is easily fabricated. Hence, the proposed simple, large-scale, low-cost method of preparing patterns of highly ordered organic nanostructures has high potential applications in various electronic and optoelectronic devices.

  11. Photoelectric properties and charge dynamics in ZnO nanowires/Cu{sub 4}Bi{sub 4}S{sub 9} and ZnO nanowires/In{sub 2}O{sub 3}/Cu{sub 4}Bi{sub 4}S{sub 9} heterostructures

    SciTech Connect

    Liu, Xiangyang E-mail: yzgu@henu.edu.cn; Wang, Shun; Gu, Yuzong E-mail: yzgu@henu.edu.cn; Zhang, Jingwei; Zhang, Jiwei

    2014-12-28

    ZnO nanowires arrays were preformed in a horizontal double-tube system. Two types of heterostructures (ZnO nanowires/Cu{sub 4}Bi{sub 4}S{sub 9} and ZnO nanowires/In{sub 2}O{sub 3}/Cu{sub 4}Bi{sub 4}S{sub 9}) and three-dimensional solar cells were fabricated with ZnO nanowires arrays as working electrode, In{sub 2}O{sub 3} as buffer layer, and Cu{sub 4}Bi{sub 4}S{sub 9} as inorganic dye and hole collector. It is suggested that two types of heterostructures have the similar absorption properties with single Cu{sub 4}Bi{sub 4}S{sub 9}. However, the results of steady state and electric field-induced surface photovoltage indicate that ZnO nanowires/In{sub 2}O{sub 3}/Cu{sub 4}Bi{sub 4}S{sub 9} exhibits the higher photovoltaic response than ZnO nanowires/Cu{sub 4}Bi{sub 4}S{sub 9}. Using the transient surface photovoltage spectroscopy, we further studied the separation and transport mechanism of photogenerated charges. Furthermore, Cu{sub 4}Bi{sub 4}S{sub 9}/In{sub 2}O{sub 3}/ZnO cells presents the better performance than Cu{sub 4}Bi{sub 4}S{sub 9}/ZnO cells and the highest efficiencies are about 6.4% and 5.2%, respectively. It is suggested that direct paths, interface barrier, built-in electric field, and double energy level matchings between conduction bands (Cu{sub 4}Bi{sub 4}S{sub 9} and In{sub 2}O{sub 3}, In{sub 2}O{sub 3} and ZnO) have obvious effect on the separation of photogenerated charges. Then we discussed the synthetic action on the charge dynamics from these factors.

  12. UV light sensing properties of Sm doped vertically aligned ZnO nanorod arrays

    SciTech Connect

    Kumar, D. Ranjith; Ranjith, K. S.; Rajendrakumar, R. T.

    2015-06-24

    Samarium doped ZnO nanorods were grown on silicon substrate by using vapor phase transport method (VPT) with the growth temperature of 950°C. The synthesized nanorods were characterized by XRD, field emission scanning electron microscopy, Raman spectra, and photocurrent measurements. The XRD result revealed that Sm was successfully doped into lattice plane of hexagonal ZnO nanorods. The FESEM result confirms the pure ZnO has nanorod like morphology with an average diameter and length of 130nm and 10µm respectively. The above observation is supported by the Micro-Raman spectroscopy result. The photocurrent in the visible region has been significantly enhanced due to deposition of Sm on the surface of the ZnO nanorods. Sm acts as a visible sensitizer because of its lower band gap compared to ZnO.

  13. Inorganic/organic hybrid solar cells: optimal carrier transport in vertically aligned silicon nanowire arrays.

    PubMed

    Sato, Keisuke; Dutta, Mrinal; Fukata, Naoki

    2014-06-07

    Inorganic/organic hybrid radial heterojunction solar cells that combine vertically-aligned n-type silicon nanowires (SiNWs) with poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) have great potential for replacing commercial Si solar cells. The chief advantage of such solar cells is that they exhibit higher absorbance for a given thickness than commercial Si solar cells, due to incident light-trapping within the NW arrays, thus enabling lower-cost solar cell production. We report herein on the effects of NW length, annealing and surface electrode on the device performance of SiNW/PEDOT:PSS hybrid radial heterojunction solar cells. The power conversion efficiency (PCE) of the obtained SiNW/PEDOT:PSS hybrid solar cells can be optimized by tuning the thickness of the surface electrode, and the etching conditions during NW formation and post-annealing. The PCE of 9.3% is obtained by forming efficient transport pathways for photogenerated charge carriers to electrodes. Our approach is a significant contribution to design of high-performance and low-cost inorganic/organic hybrid heterojunction solar cells.

  14. Vertically aligned CdSe nanowire arrays for energy harvesting and piezotronic devices.

    PubMed

    Zhou, Yu Sheng; Wang, Kai; Han, Weihua; Rai, Satish Chandra; Zhang, Yan; Ding, Yong; Pan, Caofeng; Zhang, Fang; Zhou, Weilie; Wang, Zhong Lin

    2012-07-24

    We demonstrated the energy harvesting potential and piezotronic effect in vertically aligned CdSe nanowire (NW) arrays for the first time. The CdSe NW arrays were grown on a mica substrate by the vapor-liquid-solid process using a CdSe thin film as seed layer and platinum as catalyst. High-resolution transmission electron microscopy image and selected area electron diffraction pattern indicate that the CdSe NWs have a wurtzite structure and growth direction along (0001). Using conductive atomic force microscopy (AFM), an average output voltage of 30.7 mV and maximum of 137 mV were obtained. To investigate the effect of strain on electron transport, the current-voltage characteristics of the NWs were studied by positioning an AFM tip on top of an individual NW. By applying normal force/stress on the NW, the Schottky barrier between the Pt and CdSe was found to be elevated due to the piezotronic effect. With the change of strain of 0.12%, a current decreased from 84 to 17 pA at 2 V bias. This paper shows that the vertical CdSe NW array is a potential candidate for future piezo-phototronic devices.

  15. Aligned silver nanowire-based transparent electrodes for engineering polarisation-selective optoelectronics

    PubMed Central

    Park, Byoungchoo; Bae, In-Gon; Huh, Yoon Ho

    2016-01-01

    We herein report on a remarkably simple, fast, and economic way of fabricating homogeneous and well oriented silver nanowires (AgNWs) that exhibit strong in-plane electrical and optical anisotropies. Using a small quantity of AgNW suspension, the horizontal-dip (H-dip) coating method was applied, in which highly oriented AgNWs were deposited unidirectionally along the direction of coating over centimetre-scale lengths very rapidly. In applying the H-dip-coating method, we adjusted the shear strain rate of the capillary flow in the Landau-Levich meniscus of the AgNW suspension, which induced a high degree of uniaxial orientational ordering (0.37–0.43) of the AgNWs, comparable with the ordering seen in archetypal nematic liquid crystal (LC) materials. These AgNWs could be used to fabricate not only transparent electrodes, but also LC-alignment electrodes for LC devices and/or polarising electrodes for organic photovoltaic devices, having the potential to revolutionise the architectures of a number of polarisation-selective opto-electronic devices for use in printed/organic electronics. PMID:26778621

  16. High-performance ZnO nanowire field-effect transistor with forming gas treated SiO{sub 2} gate dielectrics

    SciTech Connect

    Qian, Haolei; Wang, Yewu E-mail: phyjsha@zju.edu.cn; Fang, Yanjun; Gu, Lin; Lu, Ren; Sha, Jian E-mail: phyjsha@zju.edu.cn

    2015-04-28

    The SiO{sub 2} films thermally grown on Si wafer have been annealed in forming atmosphere (N{sub 2}:H{sub 2} = 9:1) prior to use as gate insulators in ZnO nanowire field effect transistors (ZnO NW-FETs). Without the annealing process, ZnO NW-FETs exhibit very poor performance, and most of them even cannot be depleted under a high gate voltage of −100 V; however, with the annealing process in forming atmosphere, the device characteristics can be significantly improved, exhibiting a large turn on-off ratio of ∼10{sup 4} and a low sub-threshold swing ∼1 V/decade. The pre-annealing treatment of SiO{sub 2} (300 nm)/p-Si in N{sub 2}/H{sub 2} ambient may significantly reduce the number of non-bridging oxygen atoms, which blocks the interaction between ZnO nanowires and SiO{sub 2} surface, and finally enhances the electrical characteristics of the back-gated ZnO NW-FETs. In addition, the FET electrode fabrication process introduced in this paper is much simpler than the traditional photo-lithography and lift-off method, which has potential applications in future device fabrication.

  17. Growth of ZnO nanowires on fibers for one-dimensional flexible quantum dot-sensitized solar cells.

    PubMed

    Chen, Haining; Zhu, Liqun; Liu, Huicong; Li, Weiping

    2012-02-24

    One-dimensional flexible solar cells were fabricated through vertical growth of ZnO nanowires on freestanding carbon fibers and subsequent deposition of CdS quantum dots (QDs). Under light illumination, excitons were generated in the CdS QDs and dissociated in the ZnO/CdS interface. Photoelectrochemical characterization indicates that fiber quantum dot-sensitized solar cells (QDSCs) could effectively absorb visible light and convert it to electric energy. The photoelectrochemical performance was enhanced after the deposition of a ZnS passivating layer on the CF/ZnO/CdS surface. The highest conversion efficiency of about 0.006% was achieved by the fiber QDSCs. A higher conversion efficiency was expected to be achieved after some important parameters and cell structure were optimized and improved.

  18. UV Sensing Properties of ZnO Nanowires Grown on Glass by Rapid Thermal Oxidation of Zinc Films

    NASA Astrophysics Data System (ADS)

    Mihailova, I.; Gerbreders, V.; Sļedevskis, Ē.; Bulanovs, A.; Paškevičs, V.

    2014-08-01

    The nanostructured ZnO thin films were successfully synthesized by rapid thermal oxidation of metallic zinc films without catalysts or additives. On the surface of thin films the formation of ZnO nanowires was observed. In the work, the optical and electrical parameters and photoresponses of the obtained ZnO thin films were investigated. Nanostructured thin films of the type have a promising potential for the use in optoelectronics, sensor technique and biomedical sciences Šī darba galvenais mērķis bija izpētīt UV fotodetektora izgatavošanas iespējamību uz nanostrukturētu ZnO plāno kārtiņu bāzes, kas sintezētas termiski oksidējot Zn plānās kārtiņas. Termiskās oksidēšanas rezultātā tika novērota adatveidīgu ZnO nanostruktūru formēšanās uz kārtiņu virsmas. Izpētītas iegūto paraugu optiskās un elektriskās īpašības, kā arī fotoreakcija. Tika konstatēts, ka iegūto nanostrukturēto ZnO kārtiņu elektriskā vadītspēja ir ārkārtīgi jutīga pret UV starojumu, taču, apstarojot ar redzamo gaismu, strāva paliek gandrīz nemainīga. Kārtiņu elektriskās vadītspējas fotoreakcija ir atkarīga arī no nanostruktūru daudzuma uz virsmas. Visaugstākā UV fotovadītspēja tika novērota paraugam ar vislielāko ZnO nanoadatu koncentrāciju. UV gaismas inducētais vadītspējas pieaugums ļauj ZnO nanoadatas reversīvi pārslēgt starp stāvokļiem "ieslēgts" un "izslēgts". Līdz ar to, šīs fotojutīgās nanoadatas var tikt izmantotas UV gaismas detektoros un optiskajos slēdžos. Šādas nanostrukturētas plānās kārtiņas var tikt pielietotas arī ķīmiskajos un bioloģiskajos sensoros, pjezoelektriskajās ierīcēs, saules elementos utt. Turklāt, šādu nanostrukturēto ZnO plāno kārtiņu sintēzes process ir salīdzinoši lēts un vienkāršs, dodot iespēju liela mēroga produkcijas ražošanai

  19. Measuring the electrical characteristics of individual junctions in the SnO2 capped ZnO nanowire arrays on Zn substrate

    NASA Astrophysics Data System (ADS)

    Liu, Y.; Wang, S.; Zhang, Z. Y.; Peng, L.-M.; Shi, L.; Li, Quan

    2008-01-01

    Direct measurements on electrical characteristics have been carried out in situ inside a scanning electron microscope using a multiple nanoprobe system on individual SnO2 capped ZnO nanowires (NWs) within a NW film on a Zn substrate. It is shown that while good Ohmic contacts can be made at Zn-ZnO NW and ZnO NW -SnO2 cap (when heavily doped with Zn) junctions, the overall I-V characteristics of the Zn -ZnO-SnO2 junction system differ significantly among different NWs, suggesting doping inhomogeneity in the NW film.

  20. Glucose biosensor based on functionalized ZnO nanowire/graphite films dispersed on a Pt electrode

    NASA Astrophysics Data System (ADS)

    Gallay, P.; Tosi, E.; Madrid, R.; Tirado, M.; Comedi, D.

    2016-10-01

    We present a glucose biosensor based on ZnO nanowire self-sustained films grown on compacted graphite flakes by the vapor transport method. Nanowire/graphite films were fragmented in water, filtered to form a colloidal suspension, subsequently functionalized with glucose oxidase and finally transferred to a metal electrode (Pt). The obtained devices were evaluated using scanning electron microscopy, energy-dispersive x-ray spectroscopy, cyclic voltammetry and chronoamperometry. The electrochemical responses of the devices were determined in buffer solutions with successive glucose aggregates using a tripolar electrode system. The nanostructured biosensors showed excellent analytical performance, with linear response to glucose concentrations, high sensitivity of up to ≈17 μA cm-2 mM-1 in the 0.03-1.52 mM glucose concentration range, relatively low Michaelis-Menten constant, excellent reproducibility and a fast response. The detection limits are more than an order of magnitude lower than those achievable in commercial biosensors for glucose control, which is promising for the development of glucose monitoring methods that do not require blood extraction from potentially diabetic patients. The strong detection enhancements provided by the functionalized nanostructures are much larger than the electrode surface-area increase and are discussed in terms of the physical and chemical mechanisms involved in the detection and transduction processes.

  1. Electrical and photoresponse properties of an intramolecular p-n homojunction in single phosphorus-doped ZnO nanowires.

    PubMed

    Li, Ping-Jian; Liao, Zhi-Min; Zhang, Xin-Zheng; Zhang, Xue-Jin; Zhu, Hui-Chao; Gao, Jing-Yun; Laurent, K; Leprince-Wang, Y; Wang, N; Yu, Da-Peng

    2009-07-01

    The single-crystal n-type and p-type ZnO nanowires (NWs) were synthesized via a chemical vapor deposition method, where phosphorus pentoxide was used as the dopant source. The electrical and photoluminescence studies reveal that phosphorus-doped ZnO NWs (ZnO:P NWs) can be changed from n-type to p-type with increasing P concentration. Furthermore, we report for the first time the formation of an intramolecular p-n homojunction in a single ZnO:P NW. The p-n junction diode has a high on/off current ratio of 2.5 x 10(3) and a low forward turn-on voltage of approximately 1.37 V. Finally, the photoresponse properties of the diode were investigated under UV (325 nm) excitation in air at room temperature. The high photocurrent/dark current ratio (3.2 x 10(4)) reveals that the diode has a potential as extreme sensitive UV photodetectors.

  2. Phototoxic effects of zinc oxide nanowires (ZnO NWs) complexed with 5-ALA in RD cell line

    NASA Astrophysics Data System (ADS)

    Fakhar-e-Alam, M.; Ali, S. M. U.; Ibupoto, Z. H.; Atif, M.; Willander, M.

    2011-12-01

    In this current study, we have manifested the photosensitizing effects of zinc oxide nanowires (ZnO NWs) in dark as well as under ultra violet light exposure with 240 nm of UV region, using human muscle cancer (Rhybdomyosarcoma cells, RD) as in vitro experimental model. We have fabricated ZnO-NWs on the tip of borosilicate glass capillaries (0.5 μm diameter) and were conjugated using 5-aminolevulinic acid (ALA) for the efficient intracellular drug delivery. When ZnO NWs were applied on tumor localizing drugs with non ionizing illumination, then excited drug liberates reactive oxygen species (ROS), effecting mitochondria and nucleus resulting in cell necrosis within few minutes. During investigations, we observed that when ZnO-NWs grown on intracellular tip was excited by using 240 nm of UV light, as a resultant 625 nm of emitted red light were used as appetizer in the presence of 5-ALA for chemical reaction, which produces singlet oxygen, responsible for cell necrosis. Morphological changes of necrosed cells were examined under microscopy. Moreover, Viability of controlled and treated RD cells with optimum dose of light (UV-Visible) has been assessed by MTT assay as well as reactive oxygen species (ROS) detection.

  3. Design Concepts, Fabrication and Advanced Characterization Methods of Innovative Piezoelectric Sensors Based on ZnO Nanowires.

    PubMed

    Araneo, Rodolfo; Rinaldi, Antonio; Notargiacomo, Andrea; Bini, Fabiano; Pea, Marialilia; Celozzi, Salvatore; Marinozzi, Franco; Lovat, Giampiero

    2014-12-08

    Micro- and nano-scale materials and systems based on zinc oxide are expected to explode in their applications in the electronics and photonics, including nano-arrays of addressable optoelectronic devices and sensors, due to their outstanding properties, including semiconductivity and the presence of a direct bandgap, piezoelectricity, pyroelectricity and biocompatibility. Most applications are based on the cooperative and average response of a large number of ZnO micro/nanostructures. However, in order to assess the quality of the materials and their performance, it is fundamental to characterize and then accurately model the specific electrical and piezoelectric properties of single ZnO structures. In this paper, we report on focused ion beam machined high aspect ratio nanowires and their mechanical and electrical (by means of conductive atomic force microscopy) characterization. Then, we investigate the suitability of new power-law design concepts to accurately model the relevant electrical and mechanical size-effects, whose existence has been emphasized in recent reviews.

  4. Design Concepts, Fabrication and Advanced Characterization Methods of Innovative Piezoelectric Sensors Based on ZnO Nanowires

    PubMed Central

    Araneo, Rodolfo; Rinaldi, Antonio; Notargiacomo, Andrea; Bini, Fabiano; Pea, Marialilia; Celozzi, Salvatore; Marinozzi, Franco; Lovat, Giampiero

    2014-01-01

    Micro- and nano-scale materials and systems based on zinc oxide are expected to explode in their applications in the electronics and photonics, including nano-arrays of addressable optoelectronic devices and sensors, due to their outstanding properties, including semiconductivity and the presence of a direct bandgap, piezoelectricity, pyroelectricity and biocompatibility. Most applications are based on the cooperative and average response of a large number of ZnO micro/nanostructures. However, in order to assess the quality of the materials and their performance, it is fundamental to characterize and then accurately model the specific electrical and piezoelectric properties of single ZnO structures. In this paper, we report on focused ion beam machined high aspect ratio nanowires and their mechanical and electrical (by means of conductive atomic force microscopy) characterization. Then, we investigate the suitability of new power-law design concepts to accurately model the relevant electrical and mechanical size-effects, whose existence has been emphasized in recent reviews. PMID:25494351

  5. Electrical Characterization of Zn and ZnO Nanowires Grown on PEDOT:PSS Conductive Polymer Thin Films by Physical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Chamberlin, Matthew; Constantin, Costel

    2011-10-01

    Physical vapor deposition (PVD) techniques offer tremendous possibilities for easy fabrication of nanostructure arrays for use in thin film electronics. In this study we examine inorganic/organic heterojunctions produced by growing conductive Zn and semiconductive ZnO nanowire arrays on organic conductive PEDOT:PSS polymer thin films using simple and cost-effective PVD methods. Understanding the electrical properties of these hybrid films are of particular interest for applications in organic electronics. However, traditional systems for measuring conductivity and resistivity of thin films by the Van Der Pauw method prove problematic when dealing with soft polymeric surfaces. We present here electrical studies of ZnO- and Zn-nanowire/PEDOT:PSS heterojunctions using a modified 2-point probe method constructed from inexpensive and easily available materials.

  6. Investigation of ZnO Nanowire Interfaces for Multi-Scale Composites

    DTIC Science & Technology

    2012-03-06

    reinforcing fibers. The nanowires functionally grade the interface, improve bonding, and enhance load transfer between the fiber and matrix material...ZnO Nanowire Interphase, Advanced Functional Materials, (08 2009): 0. doi: 10.1002/adfm.200900011 2012/03/06 20:52:35 7 Ulises Galan, Yirong Lin... functionalization of carbon fibers through a grafting reaction that preserves fiber tensile strength, Carbon, (11 2011): 0. doi: 10.1016/j.carbon

  7. Low-Cost and High-Productivity Three-Dimensional Nanocapacitors Based on Stand-Up ZnO Nanowires for Energy Storage.

    PubMed

    Wei, Lei; Liu, Qi-Xuan; Zhu, Bao; Liu, Wen-Jun; Ding, Shi-Jin; Lu, Hong-Liang; Jiang, Anquan; Zhang, David Wei

    2016-12-01

    Highly powered electrostatic capacitors based on nanostructures with a high aspect ratio are becoming critical for advanced energy storage technology because of their high burst power and energy storage capability. We report the fabrication process and the electrical characteristics of high capacitance density capacitors with three-dimensional solid-state nanocapacitors based on a ZnO nanowire template. Stand-up ZnO nanowires are grown face down on p-type Si substrates coated with a ZnO seed layer using a hydrothermal method. Stacks of AlZnO/Al2O3/AlZnO are then deposited sequentially on the ZnO nanowires using atomic layer deposition. The fabricated capacitor has a high capacitance density up to 92 fF/μm(2) at 1 kHz (around ten times that of the planar capacitor without nanowires) and an extremely low leakage current density of 3.4 × 10(-8) A/cm(2) at 2 V for a 5-nm Al2O3 dielectric. Additionally, the charge-discharge characteristics of the capacitor were investigated, indicating that the resistance-capacitance time constants were 550 ns for both the charging and discharging processes and the time constant was not dependent on the voltage. This reflects good power characteristics of the fabricated capacitors. Therefore, the current work provides an exciting strategy to fabricate low-cost and easily processable, high capacitance density capacitors for energy storage.

  8. Thermo-enhanced field emission from ZnO nanowires: Role of defects and application in a diode flat panel X-ray source

    NASA Astrophysics Data System (ADS)

    Zhang, Zhipeng; Chen, Daokun; Chen, Wenqing; Chen, Yicong; Song, Xiaomeng; Zhan, Runze; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun

    2017-03-01

    A thermo-enhanced field emission phenomenon was observed from ZnO nanowires. The field emission current increased by almost two orders of magnitude under a constant applied electric field, and the turn-on field decreased from 6.04 MV/m to 5.0 MV/m when the temperature increased from 323 to 723 K. The Poole-Frenkel electron excitation from the defect-induced trapping centers to the conduction band under high electric fields is believed to be the primary cause of the observed phenomenon. The experimental results fit well with the proposed physical model. The field emission from ZnO nanowires with different defect concentrations further confirmed the role of defects. Using the thermo-enhanced field emission phenomenon, a diode flat panel X-ray source was demonstrated, for which the energy and dose can be separately tuned. The thermo-enhanced field emission phenomenon observed from ZnO nanowires could be an effective way to realize a large area flat panel multi-energy X-ray source.

  9. Novel approach for observing the asymmetrical evolution and the compositional nonuniformity of laser pulsed atom probe tomography of a single ZnO nanowire

    NASA Astrophysics Data System (ADS)

    Seol, Jae-Bok; Kim, Young-Tae; Kim, Bo-Hwa; Park, Chan-Gyung

    2016-01-01

    The characterization of ZnO nanowires is crucial for developing nanostructured devices together with related compounds and alloys with an atomic-scale regime. This study describes the effects of laser energy on the atom probe tomography analysis of a single ZnO nanowire with a high aspect ratio, diameters of 80?100 nm and lengths of 10 µm. We observed both an asymmetrical evolution in the apex morphology and the compositional nonuniformities of Zn and O ions with respect to the laser energies ranging from 5 to 40 nJ. When the higher laser illumination exposed to the ZnO nanowires, non-uniform field strength becomes noticeable especially at the laser incident side of the samples. Moreover, we measured the charge state ratios of Zn+ and Zn2+ ions as a function of the applied laser energies. Our results proved important for accurate quantitative characterization and better interpretation for the laser-pulsed atom probe tomography of ZnO-based devices.

  10. Hybrid solar cells with conducting polymers and vertically aligned silicon nanowire arrays: The effect of silicon conductivity

    NASA Astrophysics Data System (ADS)

    Woo, Sungho; Hoon Jeong, Jae; Kun Lyu, Hong; Jeong, Seonju; Hyoung Sim, Jun; Hyun Kim, Wook; Soo Han, Yoon; Kim, Youngkyoo

    2012-08-01

    Organic/inorganic hybrid solar cells, based on vertically aligned n-type silicon nanowires (n-Si NWs) and p-type conducting polymers (PEDOT:PSS), were investigated as a function of Si conductivity. The n-Si NWs were easily prepared from the n-Si wafer by employing a silver nanodot-mediated micro-electrochemical redox reaction. This investigation shows that the photocurrent-to-voltage characteristics of the n-Si NW/PEDOT:PSS cells clearly exhibit a stable rectifying diode behavior. The increase in current density and fill factor using high conductive silicon is attributed to an improved charge transport towards the electrodes achieved by lowering the device's series resistance. Our results also show that the surface area of the nanowire that can form heterojunction domains significantly influences the device performance.

  11. Incorporation of a self-aligned selective emitter to realize highly efficient (12.8%) Si nanowire solar cells.

    PubMed

    Um, Han-Don; Park, Kwang-Tae; Jung, Jin-Young; Li, Xiaopeng; Zhou, Keya; Jee, Sang-Won; Lee, Jung-Ho

    2014-05-21

    Formation of a selective emitter in crystalline silicon solar cells improves photovoltaic conversion efficiency by decoupling emitter regions for light absorption (moderately doped) and metallization (degenerately doped). However, use of a selective emitter in silicon nanowire (Si NW) solar cells is technologically challenging because of difficulties in forming robust Ohmic contacts that interface directly with the top-ends of nanowires. Here we describe a self-aligned selective emitter successfully integrated into an antireflective Si NW solar cell. By one-step metal-assisted chemical etching, NW arrays formed only at light-absorbing areas between top-metal grids while selectively retaining Ohmic contact regions underneath the metal grids. We observed a remarkable ∼40% enhancement in blue responses of internal quantum efficiency, corresponding to a conversion efficiency of 12.8% in comparison to the 8.05% of a conventional NW solar cell.

  12. Synthesis and optimization of the magnetic properties of aligned strontium ferrite nanowires

    SciTech Connect

    Ebrahimi, Fatemeh; Bakhshi, Saeed Reza; Ashrafizadeh, Fakhreddin; Ghasemi, Ali

    2016-04-15

    Highlights: • Dip coating method was used to synthesize strontium ferrite nanowires in template. • Size of nanowires was controlled via anodization parameters. • Fe/Sr ratio was optimized in precursor. • Magnetic properties of nanowires and nanopowders were compared. - Abstract: High aspect ratio strontium hexaferrite nanowires were fabricated by dip coating in alumina template. Fe/Sr ratio was changed from 10 to 12 in precursor, and the samples were annealed at a range of temperatures 500–900 °C in order to optimize the magnetic properties of strontium ferrite in the form of nanowires. Field emission scanning electron microscope (FESEM) proved the formation of nanowires in the templates, while TEM images revealed a high degree of crystallinity. The ferrites were further characterized by X-ray diffraction (XRD) and energy dispersive X-ray spectrometer (EDS). Magnetic properties of the specimens were studied by a SQUID at 10–300 K. The results showed that the coercivity of packed density nanowires in the template was much less than that of the nanopowders. On the other hand, the coercivity of nanowires at ambient temperature was less than low temperature coercivity.

  13. Vertically aligned ZnO nanorod core-polypyrrole conducting polymer sheath and nanotube arrays for electrochemical supercapacitor energy storage

    PubMed Central

    2014-01-01

    Nanocomposite electrodes having three-dimensional (3-D) nanoscale architecture comprising of vertically aligned ZnO nanorod array core-polypyrrole (PPy) conducting polymer sheath and the vertical PPy nanotube arrays have been investigated for supercapacitor energy storage. The electrodes in the ZnO nanorod core-PPy sheath structure are formed by preferential nucleation and deposition of PPy layer over hydrothermally synthesized vertical ZnO nanorod array by controlled pulsed current electropolymerization of pyrrole monomer under surfactant action. The vertical PPy nanotube arrays of different tube diameter are created by selective etching of the ZnO nanorod core in ammonia solution for different periods. Cyclic voltammetry studies show high areal-specific capacitance approximately 240 mF.cm-2 for open pore and approximately 180 mF.cm-2 for narrow 30-to-36-nm diameter PPy nanotube arrays attributed to intensive faradic processes arising from enhanced access of electrolyte ions through nanotube interior and exterior. Impedance spectroscopy studies show that capacitive response extends over larger frequency domain in electrodes with PPy nanotube structure. Simulation of Nyquist plots by electrical equivalent circuit modeling establishes that 3-D nanostructure is better represented by constant phase element which accounts for the inhomogeneous electrochemical redox processes. Charge-discharge studies at different current densities establish that kinetics of the redox process in PPy nanotube electrode is due to the limitation on electron transport rather than the diffusive process of electrolyte ions. The PPy nanotube electrodes show deep discharge capability with high coulomb efficiency and long-term charge-discharge cyclic studies show nondegrading performance of the specific areal capacitance tested for 5,000 cycles. PMID:25246867

  14. Hierarchical ZnO Nanowires-loaded Sb-doped SnO2-ZnO Micrograting Pattern via Direct Imprinting-assisted Hydrothermal Growth and Its Selective Detection of Acetone Molecules.

    PubMed

    Choi, Hak-Jong; Choi, Seon-Jin; Choo, Soyoung; Kim, Il-Doo; Lee, Heon

    2016-01-08

    We propose a novel synthetic route by combining imprinting transfer of a Sb-doped SnO2 (ATO)-ZnO composite micrograting pattern (MP), i.e., microstrip lines, on a sensor substrate and subsequent hydrothermal growth of ZnO nanowires (NWs) for producing a hierarchical ZnO NW-loaded ATO-ZnO MP as an improved chemo-resistive sensing layer. Here, ATO-ZnO MP structure with 3-μm line width, 9-μm pitch, and 6-μm height was fabricated by direct transfer of mixed ATO and ZnO nanoparticle (NP)-dispersed resists, which are pre-patterned on a polydimethylsiloxane (PDMS) mold. ZnO NWs with an average diameter of less than 50 nm and a height of 250 nm were quasi-vertically grown on the ATO-ZnO MP, leading to markedly enhanced surface area and heterojunction composites between each ATO NP, ZnO NP, and ZnO NW. A ZnO NW-loaded MP sensor with a relative ratio of 1:9 between ATO and ZnO (1:9 ATO-ZnO), exhibited highly sensitive and selective acetone sensing performance with 2.84-fold higher response (R air/R gas = 12.8) compared to that (R air/R gas = 4.5) of pristine 1:9 ATO-ZnO MP sensor at 5 ppm. Our results demonstrate the processing advantages of direct imprinting-assisted hydrothermal growth for large-scale homogeneous coating of hierarchical oxide layers, particularly for applications in highly sensitive and selective chemical sensors.

  15. Hierarchical ZnO Nanowires-loaded Sb-doped SnO2-ZnO Micrograting Pattern via Direct Imprinting-assisted Hydrothermal Growth and Its Selective Detection of Acetone Molecules

    PubMed Central

    Choi, Hak-Jong; Choi, Seon-Jin; Choo, Soyoung; Kim, Il-Doo; Lee, Heon

    2016-01-01

    We propose a novel synthetic route by combining imprinting transfer of a Sb-doped SnO2 (ATO)-ZnO composite micrograting pattern (MP), i.e., microstrip lines, on a sensor substrate and subsequent hydrothermal growth of ZnO nanowires (NWs) for producing a hierarchical ZnO NW-loaded ATO-ZnO MP as an improved chemo-resistive sensing layer. Here, ATO-ZnO MP structure with 3-μm line width, 9-μm pitch, and 6-μm height was fabricated by direct transfer of mixed ATO and ZnO nanoparticle (NP)-dispersed resists, which are pre-patterned on a polydimethylsiloxane (PDMS) mold. ZnO NWs with an average diameter of less than 50 nm and a height of 250 nm were quasi-vertically grown on the ATO-ZnO MP, leading to markedly enhanced surface area and heterojunction composites between each ATO NP, ZnO NP, and ZnO NW. A ZnO NW-loaded MP sensor with a relative ratio of 1:9 between ATO and ZnO (1:9 ATO-ZnO), exhibited highly sensitive and selective acetone sensing performance with 2.84-fold higher response (Rair/Rgas = 12.8) compared to that (Rair/Rgas = 4.5) of pristine 1:9 ATO-ZnO MP sensor at 5 ppm. Our results demonstrate the processing advantages of direct imprinting-assisted hydrothermal growth for large-scale homogeneous coating of hierarchical oxide layers, particularly for applications in highly sensitive and selective chemical sensors. PMID:26743814

  16. Hierarchical ZnO Nanowires-loaded Sb-doped SnO2-ZnO Micrograting Pattern via Direct Imprinting-assisted Hydrothermal Growth and Its Selective Detection of Acetone Molecules

    NASA Astrophysics Data System (ADS)

    Choi, Hak-Jong; Choi, Seon-Jin; Choo, Soyoung; Kim, Il-Doo; Lee, Heon

    2016-01-01

    We propose a novel synthetic route by combining imprinting transfer of a Sb-doped SnO2 (ATO)-ZnO composite micrograting pattern (MP), i.e., microstrip lines, on a sensor substrate and subsequent hydrothermal growth of ZnO nanowires (NWs) for producing a hierarchical ZnO NW-loaded ATO-ZnO MP as an improved chemo-resistive sensing layer. Here, ATO-ZnO MP structure with 3-μm line width, 9-μm pitch, and 6-μm height was fabricated by direct transfer of mixed ATO and ZnO nanoparticle (NP)-dispersed resists, which are pre-patterned on a polydimethylsiloxane (PDMS) mold. ZnO NWs with an average diameter of less than 50 nm and a height of 250 nm were quasi-vertically grown on the ATO-ZnO MP, leading to markedly enhanced surface area and heterojunction composites between each ATO NP, ZnO NP, and ZnO NW. A ZnO NW-loaded MP sensor with a relative ratio of 1:9 between ATO and ZnO (1:9 ATO-ZnO), exhibited highly sensitive and selective acetone sensing performance with 2.84-fold higher response (Rair/Rgas = 12.8) compared to that (Rair/Rgas = 4.5) of pristine 1:9 ATO-ZnO MP sensor at 5 ppm. Our results demonstrate the processing advantages of direct imprinting-assisted hydrothermal growth for large-scale homogeneous coating of hierarchical oxide layers, particularly for applications in highly sensitive and selective chemical sensors.

  17. Catalyst-free growth of ZnO nanowires on ITO seed/glass by thermal evaporation method: Effects of ITO seed layer thickness

    NASA Astrophysics Data System (ADS)

    Alsultany, Forat H.; Hassan, Z.; Ahmed, Naser M.

    2016-07-01

    A seed/catalyst-free growth of ZnO nanowires (ZnO-NWs) on a glass substrate were successfully fabricated using thermal evaporation technique. These nanowires were grown on ITO seed layers of different thicknesses of 25 and 75 nm, which were deposited on glass substrates by radio frequency (RF) magnetron sputtering. Prior to synthesized ITO nanowires, the sputtered ITO seeds were annealed using the continuous wave (CW) CO2 laser at 450 °C in air for 15 min. The effect of seed layer thickness on the morphological, structural, and optical properties of ZnO-NWs were systematically investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and UV-Vis spectrophotometer.

  18. Vertically aligned ZnO nanorod grown by hydrothermal based chemical method on glass substrate

    NASA Astrophysics Data System (ADS)

    Srivastava, R.; Majumdar, S.; Bhunia, S.

    2012-06-01

    A low-temperature and effective precursor-based method has been demonstrated to synthesize nanostructured ZnO. It is found that the morphology of ZnO precursors has a strong dependence on the reaction conditions that include the molar ratio of reagents, solvent, and reaction temperature. In this work, ZnO nanostructures were synthesized via hydrothermal based chemical method. Zinc acetate dehydrate [Zn(Ac)2 2H2O] and 1-propanol(C3H8O) were adopted for a seed layer growth on glass substrate via spin coating technique. Zinc nitrate hexahydrate [Zn(NO3)2 6H2O], hexamethylenetetramine(C6H12N4) and diethylamine(C4H11N) were adopted as synthesis precursors. The ZnO nanostructures obtained were characterized by scanning electronic microscopy (SEM) and the PL method. The SEM image of the sample showed that the thin film of ZnO on glass substrate has, predominantly, a nanometric rod-like morphology with hexagonal wurtzite structure.

  19. Engineering efficient thermoelectrics from large-scale assemblies of doped ZnO nanowires: nanoscale effects and resonant-level scattering.

    PubMed

    Brockway, Lance; Vasiraju, Venkata; Sunkara, Mahendra K; Vaddiraju, Sreeram

    2014-09-10

    Recent studies focusing on enhancing the thermoelectric performance of metal oxides were primarily motivated by their low cost, large availability of the component elements in the earth's crust, and their high stability. So far, these studies indicate that n-type materials, such as ZnO, have much lower thermoelectric performance than their p-type counterparts. Overcoming this limitation requires precisely tuning the thermal and electrical transport through n-type metal oxides. One way to accomplish this is through the use of optimally doped bulk assemblies of ZnO nanowires. In this study, the thermoelectric properties of n-type aluminum and gallium dually doped bulk assembles of ZnO nanowires were determined. The results indicated that a high zT of 0.6 at 1000 °C, the highest experimentally observed for any n-type oxide, is possible. The high performance is attributed to the tailoring of the ZnO phase composition, nanostructuring of the material, and Zn-III band hybridization-based resonant scattering.

  20. EFFECT OF PRE-ANNEALING TEMPERATURE ON THE GROWTH OF ALIGNED α-Fe2O3 NANOWIRES VIA A TWO-STEP THERMAL OXIDATION

    NASA Astrophysics Data System (ADS)

    Rashid, Norhana Mohamed; Kishi, Naoki; Soga, Tetsuo

    2016-03-01

    Pre-annealing as part of a two-step thermal oxidation process has a significant effect on the growth of hematite (α-Fe2O3) nanowires on Fe foil. High-density aligned nanowires were obtained on iron foils pre-annealed at 300∘C under a dry air flow for 30min. The X-ray diffraction (XRD) patterns indicate that the nanowires are transformed from the small α-Fe2O3 grains and uniquely grow in the (110) direction. The formation of a high-density of small grains by pre-annealing improved the alignment and density of the α-Fe2O3 nanowires.

  1. On the wurtzite to tetragonal phase transformation in ZnO nanowires.

    PubMed

    Wang, Jun; Shen, Yaogen; Song, Fan; Ke, Fujiu; Liao, Xiaozhou; Lu, Chunsheng

    2017-04-21

    There is a long standing contradiction on the tensile response of zinc oxide nanowires between theoretical prediction and experimental observations. Although it is proposed that there is a ductile behavior dominated by phase transformation, only an elastic deformation and brittle fracture was witnessed in experiments. Using molecular dynamics simulations, we clarified that, as the lateral dimension of zinc oxide nanowires increases to a critical value, an unambiguous ductile-to-brittle transition occurs. The critical value increases with decreasing the strain rate. Factors including planar defects and surface contamination induce brittle fracture prior to the initiation of phase transformation. These findings are consistent with previous atomistic standpoints and experimental results.

  2. On the wurtzite to tetragonal phase transformation in ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Wang, Jun; Shen, Yaogen; Song, Fan; Ke, Fujiu; Liao, Xiaozhou; Lu, Chunsheng

    2017-04-01

    There is a long standing contradiction on the tensile response of zinc oxide nanowires between theoretical prediction and experimental observations. Although it is proposed that there is a ductile behavior dominated by phase transformation, only an elastic deformation and brittle fracture was witnessed in experiments. Using molecular dynamics simulations, we clarified that, as the lateral dimension of zinc oxide nanowires increases to a critical value, an unambiguous ductile-to-brittle transition occurs. The critical value increases with decreasing the strain rate. Factors including planar defects and surface contamination induce brittle fracture prior to the initiation of phase transformation. These findings are consistent with previous atomistic standpoints and experimental results.

  3. Polycrystalline nanowires of gadolinium-doped ceria via random alignment mediated by supercritical carbon dioxide

    PubMed Central

    Kim, Sang Woo; Ahn, Jae-Pyoung

    2013-01-01

    This study proposes a seed/template-free method that affords high-purity semiconducting nanowires from nanoclusters, which act as basic building blocks for nanomaterials, under supercritical CO2 fluid. Polycrystalline nanowires of Gd-doped ceria (Gd-CeO2) were formed by CO2-mediated non-oriented attachment of the nanoclusters resulting from the dissociation of single-crystalline aggregates. The unique formation mechanism underlying this morphological transition may be exploited for the facile growth of high-purity polycrystalline nanowires. PMID:23572061

  4. Formation, transformation and superhydrophobicity of compound surfactant-assisted aligned ZnO nanoplatelets

    NASA Astrophysics Data System (ADS)

    Xue, Mingshan; Xu, Tao; Xie, Xiaolin; Ou, Junfei; Wang, Fajun; Li, Wen

    2015-11-01

    Synthesis and understanding of hierarchically nanostructured materials are significant for exploring peculiar functional properties and underlying applications. In this study, the self-assembly formation and detailed transformation process of ZnO nanoplatelets grown by hydrothermal methods with the addition of compound surfactants (CTAB and Tween-20) have been investigated. The initial growth of ZnO nanoplatelets as well as the subsequent formation of bilayer nanorod arrays and divergent nanocone arrays on the surface and side face of these nanoplatelets were found. Compared with the formation of bulk/block crystals without the case of surfactants, the addition of compound surfactants into zinc nitrate solution is responsible for the self-assembly processes of ZnO because of the effective role of CTAB in decreasing the degree of crystallinity and the positive effect of Tween-20 on decreasing the particle size owing to the space hindered effect. As-formed hierarchically micro-nanostructured ZnO exhibits superhydrophobicity without any chemical modification, which can make water droplets suspend on the air film trapped between the nanoplatelet and nanoplatelet as well as between nanocone and nanocone.

  5. SERS detection and antibacterial activity from uniform incorporation of Ag nanoparticles with aligned Si nanowires

    NASA Astrophysics Data System (ADS)

    Chen, Chia-Yun; Hsu, Li-Jen; Hsiao, Po-Hsuan; Yu, Chang-Tze Ricky

    2015-11-01

    We present a facile, reliable and controllable two-steps electroless deposition for uniformly decorating the silver (Ag) nanoparticles (NPs) on the highly aspect ratio of silicon (Si) nanowire arrays. Different from the direct Ag-loading process, which is normally challenged by the non-uniform coating of Ag, the formation of Ag NPs using such innovative electroless process is no longer to be limited at top nanowire surfaces solely; instead, each Ag+/Si interface can initiate the galvanic reduction of Ag+ ions, thus resulting in the uniform formation of Ag NPs on the entire Si nanowire arrays. In addition, systematic explorations of surface-enhanced Raman scattering (SERS) capability as well as antibacterial activity of the Ag/Si-incorporated nanostructures were performed, and the optimized Ag loadings on Si nanowire-based substrates along with the kinetic investigations were further revealed, which may benefit their practical applications in sensing, medical and biological needs.

  6. Stable field emission from arrays of vertically aligned free-standing metallic nanowires

    NASA Astrophysics Data System (ADS)

    Xavier, Stephane; Mátéfi-Tempfli, Stefan; Ferain, Etienne; Purcell, Stephen; Enouz-Védrenne, Shaïma; Gangloff, Laurent; Minoux, Eric; Hudanski, Ludovic; Vincent, Pascal; Schnell, Jean-Philippe; Pribat, Didier; Piraux, Luc; Legagneux, Pierre

    2008-05-01

    We present a fully elaborated process to grow arrays of metallic nanowires with controlled geometry and density, based on electrochemical filling of nanopores in track-etched templates. Nanowire growth is performed at room temperature, atmospheric pressure and is compatible with low cost fabrication and large surfaces. This technique offers an excellent control of the orientation, shape and nanowires density. It is applied to fabricate field emission arrays with a good control of the emission site density. We have prepared Co, Ni, Cu and Rh nanowires with a height of 3 µm, a diameter of 80 nm and a density of ~107 cm-2. The electron field emission measurements and total energy distributions show that the as-grown nanowires exhibit a complex behaviour, first with emission activation under high field, followed by unstable emission. A model taking into account the effect of an oxide layer covering the nanowire surface is developed to explain this particular field emission behaviour. Finally, we present an in situ cleaning procedure by ion bombardment that collectively removes this oxide layer, leading to a stable and reproducible emission behaviour. After treatment, the emission current density is ~1 mA cm-2 for a 30 V µm-1 applied electric field.

  7. Development of novel implants with self-antibacterial performance through in-situ growth of 1D ZnO nanowire.

    PubMed

    Wang, Wenhao; Li, Tak Lung; Wong, Hoi Man; Chu, Paul K; Kao, Richard Y T; Wu, Shuilin; Leung, Frankie K L; Wong, Tak Man; To, Michael K T; Cheung, Kenneth M C; Yeung, Kelvin W K

    2016-05-01

    To prevent the attachment of bacteria to implant surfaces, the 1D zinc oxide nanowire-coating has been successfully developed on material surfaces by using a custom-made hydrothermal approach. The chemical nature, surface topography and wettability of spike-like 1D ZnO nanowire-coating are comprehensively investigated. The anti-adhesive and antimicrobial properties of 1D nanowire-coating are tested against Staphylococcus aureus, Pseudomonas aeruginosa and Escherichia coli by using in vitro live/dead staining and scanning electron microscopy. We find that the adhesion of bacteria can be reduced via the special spike-like topography and that the release of Zn(2+) ions can help suppress the growth of attached bacteria. Furthermore, the antimicrobial effect is also evaluated under in vivo conditions by using a rat model infected with bioluminescent S. aureus. The amount of live bacteria in the rat implanted with a nanowire-coated sample is less than that of the control at various time points. Hence, it is believed that the nanowire-coated material is promising for application in orthopaedic implantation after the long-term animal studies have been completed.

  8. Application of Chemical Doping and Architectural Design Principles To Fabricate Nanowire Co2Ni3ZnO8 Arrays for Aqueous Asymmetric Supercapacitors.

    PubMed

    Liu, Qi; Yang, Bin; Liu, Jingyuan; Yuan, Yi; Zhang, Hongsen; Liu, Lianhe; Wang, Jun; Li, Rumin

    2016-08-10

    Electrode materials derived from transition metal oxides have a serious problem of low electron transfer rate, which restricts their practical application. However, chemically doped graphene transforms the chemical bonding configuration to enhance electron transfer rate and, therefore, facilitates the successful fabrication of Co2Ni3ZnO8 nanowire arrays. In addition, the Co2Ni3ZnO8 electrode materials, considered as Ni and Zn ions doped into Co3O4, have a high electron transfer rate and electrochemical response capability, because the doping increases the degree of crystal defect and reaction of Co/Ni ions with the electrolyte. Hence, the Co2Ni3ZnO8 electrode exhibits a high rate property and excellent electrochemical cycle stability, as determined by electrochemical analysis of the relationship between specific capacitance, IR drop, Coulomb efficiency, and different current densities. From the results of a three-electrode system of electrochemical measurement, the Co2Ni3ZnO8 electrode demonstrates a specific capacitance of 1115 F g(-1) and retains 89.9% capacitance after 2000 cycles at a current density of 4 A g(-1). The energy density of the asymmetric supercapacitor (AC//Co2Ni3ZnO8) is 54.04 W h kg(-1) at the power density of 3200 W kg(-1).

  9. Optical and Electrical Investigation of ZnO Nano-Wire Array to Micro-Flower from Hierarchical Nano-Rose Structures.

    PubMed

    Pal, Kaushik; Zhan, Bihong; Ma, Xiao; Wang, Guoping; Schirhagl, Romana; Murgasen, Priya

    2016-01-01

    We have demonstrated a simple solvo-chemical and solvo-thermal route to design various nano-structures growth of zinc oxide (ZnO). The shapes and morphologies can be easily controlled by using different ambient conditions. We successfully fabricated ZnO nano-wires array on ITO substrate. Those nano-wire array center gradually formed micro-flower like structure evolved in this solvo-chemical route. This novel synthesis happened under cationic surfactant CTAB in the solution helps to form hierarchical structures of ZnO. The length of nano-wire is around 2.0 µm, which formed micro-flower diameter 5.0 µm. Micro-flowers were scratched out from ITO substrate thin film and annealed at 650 °C in electric oven for 1 hour, eventually this micro-flower transformed to novel nano-rose structure confirmed by electron microscopic study. Synthesized nano-rose diameter was around 730 nm. Moreover, we found a drastic change of dielectric behavior and DC conductivity of ZnO nanostructures depending on geometry regulated by the duration of preparation. Interestingly enough, optical and electrical properties also changed due to different crystalline structure formation. The dielectric constant is higher at 7.5 also high threshold voltages at 4 V, corresponds to nano-wires array with micro-flower system. A detail dielectric analysis of one step behavior of broad single relaxation peak was obtained only shows the normal dispersion in this system from 1000 kHz to 10 MHz. While less dielectric constant 1.7 and low threshold voltage 1 V, investigated nano-wires with micro-flower, then nano-rose transition appeared in two step behaviors of double relaxations phenomenon appeared one at low frequency and other at higher frequency region. Besides, I~V response characteristics is new idea about different breakdown voltages and bi-stable DC switching capability. Our work demonstrates the possibility of a fast novel synthesis route using a Solvo-chemical process for this type of nanomaterials

  10. Efficiency enhancement of silicon solar cells with vertically aligned ZnO nanorod arrays as an antireflective layer

    NASA Astrophysics Data System (ADS)

    Sardana, Sanjay K.; Chandrasekhar, P. S.; Kumar, Rupesh; Komarala, Vamsi K.

    2017-04-01

    Vertically aligned ZnO nanorods grown by the hydrothermal method have been explored as an antireflection layer on polished, textured, and antireflection coating (ARC) coated textured silicon (Si) wafers. Average reflectance (from 380 to 1100 nm) of polished and textured Si wafers reduced from 32 to 9% and 14 to 2%, respectively. With nanorods, multiple light interactions and good optical impedance matching with graded refractive index (effective medium) from air to Si favored for light confinement in Si. Optimized nanorods on ARC coated textured Si cell led to an enhancement of photocurrent from 34.30 to 36.38 mA/cm2 and efficiency from 15.11 to 16.43%.

  11. Inorganic Nano Light-Emitting Transistor: p-Type Porous Silicon Nanowire/n-Type ZnO Nanofilm.

    PubMed

    Lee, Sang Hoon; Kim, Jong Woo; Lee, Tae Il; Myoung, Jae Min

    2016-08-01

    An inorganic nano light-emitting transistor (INLET) consisting of p-type porous Si nanowires (PoSiNWs) and an n-type ZnO nanofilm was integrated on a heavily doped p-type Si substrate with a thermally grown SiO2 layer. To verify that modulation of the Fermi level of the PoSiNWs is key for switchable light emitting, I-V and electroluminescent characteristics of the INLET are investigated as a function of gate bias (V g ). As the V g is changed from 0 V to -20 V, the current level and light-emission intensity in the orange-red range increase by three and two times, respectively, with a forward bias of 20 V in the p-n junction, compared to those at a V g of 0 V. On the other hand, as the V g approaches 10 V, the current level decreases and the emission intensity is reduced and then finally switched off. This result arises from the modulation of the Fermi level of the PoSiNWs and the built-in potential at the p-n junction by the applied gate electric field.

  12. Self-powered ultraviolet photodetectors based on selectively grown ZnO nanowire arrays with thermal tuning performance.

    PubMed

    Bai, Zhiming; Chen, Xiang; Yan, Xiaoqin; Zheng, Xin; Kang, Zhuo; Zhang, Yue

    2014-05-28

    A self-powered Schottky-type ultraviolet photodetector with Al-Pt interdigitated electrodes has been fabricated based on selectively grown ZnO nanowire arrays. At zero bias, the fabricated photodetector exhibited high sensitivity and excellent selectivity to UV light illumination with a fast response time of 81 ms. By tuning the Schottky barrier height through the thermally induced variation of the interface chemisorbed oxygen, an ultrahigh sensitivity of 3.1 × 10(4) was achieved at 340 K without an external power source, which was 82% higher than that obtained at room temperature. According to the thermionic emission-diffusion theory and the solar cell theory, the changes in the photocurrent of the photodetector at zero bias with various system temperatures were calculated, which agreed well with the experimental data. This work demonstrates a promising approach to modulating the performance of a self-powered photodetector by heating and provides theoretical support for studying the thermal effect on the future photoelectric device.

  13. Controllable Growth of Ultrathin P-doped ZnO Nanosheets.

    PubMed

    Zhu, Yuankun; Yang, Hengyan; Sun, Feng; Wang, Xianying

    2016-12-01

    Ultrathin phosphor (P)-doped ZnO nanosheets with branched nanowires were controllably synthesized, and the effects of oxygen and phosphor doping on the structural and optical properties were systematically studied. The grown ZnO nanosheet exhibits an ultrathin nanoribbon backbone with one-side-aligned nanoteeth. For the growth of ultrathin ZnO nanosheets, both oxygen flow rate and P doping are essential, by which the morphologies and microstructures can be finely tuned. P doping induces strain relaxation to change the growth direction of ZnO nanoribbons, and oxygen flow rate promotes the high supersaturation degree to facilitate the growth of nanoteeth and widens the nanoribbons. The growth of P-doped ZnO in this work provides a new progress towards the rational control of the morphologies for ZnO nanostructures.

  14. Controllable Growth of Ultrathin P-doped ZnO Nanosheets

    NASA Astrophysics Data System (ADS)

    Zhu, Yuankun; Yang, Hengyan; Sun, Feng; Wang, Xianying

    2016-04-01

    Ultrathin phosphor (P)-doped ZnO nanosheets with branched nanowires were controllably synthesized, and the effects of oxygen and phosphor doping on the structural and optical properties were systematically studied. The grown ZnO nanosheet exhibits an ultrathin nanoribbon backbone with one-side-aligned nanoteeth. For the growth of ultrathin ZnO nanosheets, both oxygen flow rate and P doping are essential, by which the morphologies and microstructures can be finely tuned. P doping induces strain relaxation to change the growth direction of ZnO nanoribbons, and oxygen flow rate promotes the high supersaturation degree to facilitate the growth of nanoteeth and widens the nanoribbons. The growth of P-doped ZnO in this work provides a new progress towards the rational control of the morphologies for ZnO nanostructures.

  15. Effect of Nb-doped TiO2 on nanocomposited aligned ZnO nanorod/TiO2:Nb for dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Saurdi, I.; Shafura, A. K.; Azhar, N. E. A.; Ishak, A.; Malek, M. F.; Alrokayan, A. H. Salman; Khan, Haseeb A.; Mamat, M. H.; Rusop, M.

    2016-07-01

    The Nb-doped TiO2 films were deposited on glass substrate at different Nb concentrations of 0 at.%, 1 at.%, 3 at.%, 5 at.% and 7 at.%, respectively and their electrical and structural properties were investigated. Subsequently, the Nb-doped TiO2 films were deposited on top of aligned ZnO Nanorod on ITO glass substrates using spin coating technique. The nanocomposited aligned ZnO nanorod/Nb-doped TiO2 (TiO2:Nb) were coated with different Nb concentrations of 0 at.%, 1 at.%, 3 at.%, 5 at.% and 7 at.%, respectively. The Dye-sensitized solar cells were fabricated from the nanocomposited aligned ZnO nanorod/TiO2:Nb photoanodes and their effects on the performance of the DSSCs were investigated. From the solar simulator measurement of DSSC the solar energy conversion efficiency (η) of 5.376% under AM 1.5 was obtained for the ZnO nanorod/TiO2:Nb-5at.%.

  16. Structural and optical properties of dense vertically aligned ZnO nanorods grown onto silver and gold thin films by galvanic effect with iron contamination

    SciTech Connect

    Scarpellini, D.; Paoloni, S.; Medaglia, P.G.; Pizzoferrato, R.; Orsini, A.; Falconi, C.

    2015-05-15

    Highlights: • ZnO nanorods were grown on Au and Ag films in aqueous solution by galvanic effect. • The method is prone to metal contamination which can influence the ZnO properties. • Iron doping improves the lattice matching between ZnO and the substrate. • Energy levels of point defects are lowered and the light emission is red-shifted. • Galvanic-induced nucleation starts and proceeds continuously during the growth. - Abstract: Dense arrays of vertically aligned ZnO nanorods have been grown onto either silver or gold seedless substrates trough a simple hydrothermal method by exploiting the galvanic effect between the substrate and metallic parts. The nanorods exhibit larger bases and more defined hexagonal shapes, in comparison with standard non-galvanic wet-chemistry synthesis. X-ray diffraction (XRD) shows that the iron contamination, associated with the galvanic contact, significantly improves the in-plane compatibility of ZnO with the Au and Ag cubic lattice. Photoluminescence (PL) measurements indicate that the contamination does not affect the number density of localized defects, but lowers their energy levels uniformly; differently, the band-edge emission is not altered appreciably. Finally, we have found that the ZnO hetero-nucleation by galvanic effect initiates at different times in different sites of the substrate area. Our results can be useful for the fabrication of high performance piezonanodevices comprising high-density metal-to-ZnO nanoscaled junctions without intermediate polycrystalline layers.

  17. Rapid charge transport in dye-sensitized solar cells made from vertically aligned single-crystal rutile TiO(2) nanowires.

    PubMed

    Feng, Xinjian; Zhu, Kai; Frank, Arthur J; Grimes, Craig A; Mallouk, Thomas E

    2012-03-12

    A rapid solvothermal approach was used to synthesize aligned 1D single-crystal rutile TiO(2) nanowire (NW) arrays on transparent conducting substrates as electrodes for dye-sensitized solar cells. The NW arrays showed a more than 200 times faster charge transport and a factor four lower defect state density than conventional rutile nanoparticle films.

  18. Rapid Charge Transport in Dye-Sensitized Solar Cells Made from Vertically Aligned Single-Crystal Rutile TiO2 Nanowires

    SciTech Connect

    Feng, X.; Zhu, K.; Frank, A. J.; Grimes, C. A.; Mallouk, T. E.

    2012-03-12

    A rapid solvothermal approach was used to synthesize aligned 1D single-crystal rutile TiO2 nanowire (NW) arrays on transparent conducting substrates as electrodes for dye-sensitized solar cells. The NW arrays showed a more than 200 times faster charge transport (see picture) and a factor four lower defect state density than conventional rutile nanoparticle films.

  19. Optical XAFS of ZnO Nanowires at the Zn K-Edge and Related Phenomena

    SciTech Connect

    Heigl, F.; Sun, X.H.J; Lam, S.; Sham, T.K.; Gordon, R.; Brewe, D.; Rosenberg, R.; Shenoy, G.; Yablonskikh, M.; MacNaughton, J.; Moewes, A.

    2008-10-06

    We report x-ray excited optical luminescence (XEOL) from one-dimensional nanostructures of ZnO excited with photon energies across the Zn K-edge. The optical luminescence shows an UV and a green emission band characteristic of near band edge and defect emission, respectively. The optical channels were used in turn to monitor the Zn K-edge XAFS to high k values. The densities of states of oxygen character in the valence band were also studied with x-ray emission spectroscopy (XES). The Zn K-edge decay dynamics was examined with time-resolved x-ray excited optical luminescence.

  20. Dense and vertically-aligned centimetre-long ZnS nanowire arrays: ionic liquid assisted synthesis and their field emission properties

    NASA Astrophysics Data System (ADS)

    Chen, Shimou; Li, Liang; Wang, Xi; Tian, Wei; Wang, Xuebing; Tang, Dai-Ming; Bando, Yoshio; Golberg, Dmitri

    2012-03-01

    Based on the self-ordering behavior of ionic liquids on solid surface, a gold ion containing ionic liquid was employed to obtain a uniform pattern of gold nanoparticles on Si substrate. Using this catalytic pattern, super-dense, centimetre long, well-crystallized and vertically-aligned ZnS nanowire arrays were then generated. It was found that the densely-packed gold nanoparticles played a key role in the nanowire alignment. Furthermore, the field-emission measurements show that the present ultralong ZnS nanowires arrays possess a low turn-on field of 3.69 V μm-1 and a high field-enhancement factor of 1215.4, indicating they are valuable field emitters.Based on the self-ordering behavior of ionic liquids on solid surface, a gold ion containing ionic liquid was employed to obtain a uniform pattern of gold nanoparticles on Si substrate. Using this catalytic pattern, super-dense, centimetre long, well-crystallized and vertically-aligned ZnS nanowire arrays were then generated. It was found that the densely-packed gold nanoparticles played a key role in the nanowire alignment. Furthermore, the field-emission measurements show that the present ultralong ZnS nanowires arrays possess a low turn-on field of 3.69 V μm-1 and a high field-enhancement factor of 1215.4, indicating they are valuable field emitters. Electronic supplementary information (ESI) available. See DOI: 10.1039/c2nr11835a

  1. Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates

    PubMed Central

    Starko-Bowes, Ryan; Pramanik, Sandipan

    2013-01-01

    In recent years π-conjugated organic semiconductors have emerged as the active material in a number of diverse applications including large-area, low-cost displays, photovoltaics, printable and flexible electronics and organic spin valves. Organics allow (a) low-cost, low-temperature processing and (b) molecular-level design of electronic, optical and spin transport characteristics. Such features are not readily available for mainstream inorganic semiconductors, which have enabled organics to carve a niche in the silicon-dominated electronics market. The first generation of organic-based devices has focused on thin film geometries, grown by physical vapor deposition or solution processing. However, it has been realized that organic nanostructures can be used to enhance performance of above-mentioned applications and significant effort has been invested in exploring methods for organic nanostructure fabrication. A particularly interesting class of organic nanostructures is the one in which vertically oriented organic nanowires, nanorods or nanotubes are organized in a well-regimented, high-density array. Such structures are highly versatile and are ideal morphological architectures for various applications such as chemical sensors, split-dipole nanoantennas, photovoltaic devices with radially heterostructured "core-shell" nanowires, and memory devices with a cross-point geometry. Such architecture is generally realized by a template-directed approach. In the past this method has been used to grow metal and inorganic semiconductor nanowire arrays. More recently π-conjugated polymer nanowires have been grown within nanoporous templates. However, these approaches have had limited success in growing nanowires of technologically important π-conjugated small molecular weight organics, such as tris-8-hydroxyquinoline aluminum (Alq3), rubrene and methanofullerenes, which are commonly used in diverse areas including organic displays, photovoltaics, thin film transistors

  2. Ultrahigh density array of vertically aligned small-molecular organic nanowires on arbitrary substrates.

    PubMed

    Starko-Bowes, Ryan; Pramanik, Sandipan

    2013-06-18

    In recent years π-conjugated organic semiconductors have emerged as the active material in a number of diverse applications including large-area, low-cost displays, photovoltaics, printable and flexible electronics and organic spin valves. Organics allow (a) low-cost, low-temperature processing and (b) molecular-level design of electronic, optical and spin transport characteristics. Such features are not readily available for mainstream inorganic semiconductors, which have enabled organics to carve a niche in the silicon-dominated electronics market. The first generation of organic-based devices has focused on thin film geometries, grown by physical vapor deposition or solution processing. However, it has been realized that organic nanostructures can be used to enhance performance of above-mentioned applications and significant effort has been invested in exploring methods for organic nanostructure fabrication. A particularly interesting class of organic nanostructures is the one in which vertically oriented organic nanowires, nanorods or nanotubes are organized in a well-regimented, high-density array. Such structures are highly versatile and are ideal morphological architectures for various applications such as chemical sensors, split-dipole nanoantennas, photovoltaic devices with radially heterostructured "core-shell" nanowires, and memory devices with a cross-point geometry. Such architecture is generally realized by a template-directed approach. In the past this method has been used to grow metal and inorganic semiconductor nanowire arrays. More recently π-conjugated polymer nanowires have been grown within nanoporous templates. However, these approaches have had limited success in growing nanowires of technologically important π-conjugated small molecular weight organics, such as tris-8-hydroxyquinoline aluminum (Alq3), rubrene and methanofullerenes, which are commonly used in diverse areas including organic displays, photovoltaics, thin film transistors

  3. Enhancement of the near-band-edge photoluminescence of ZnO nanowires: Important role of hydrogen incorporation versus plasmon resonances

    SciTech Connect

    Dev, A.; Richters, J. P.; Gutowski, J.; Voss, T.; Sartor, J.; Kalt, H.

    2011-03-28

    We investigated the photoluminescence properties of ZnO nanowires coated with Au, Ag, and Pt nanoparticles deposited by dc sputtering. A strong enhancement of the near-band-edge emission was observed in all metal-coated samples but also if the samples were treated with Ar plasma without any nanoparticle deposition. High-resolution photoluminescence spectroscopy revealed hydrogen-donor-bound-exciton emission in all samples indicating unintentional hydrogen incorporation. A shorter decay time of the near-band-edge emission was observed in all cases. The results indicate that unintentional hydrogen incorporation plays a dominant role when metal deposition is performed by sputtering.

  4. Cl-Doped ZnO Nanowire Arrays on 3D Graphene Foam with Highly Efficient Field Emission and Photocatalytic Properties.

    PubMed

    Shao, Dali; Gao, Jian; Xin, Guoqing; Wang, Yiping; Li, Lu; Shi, Jian; Lian, Jie; Koratkar, Nikhil; Sawyer, Shayla

    2015-09-01

    An environmentally friendly, low-cost, and large-scale method is developed for fabrication of Cl-doped ZnO nanowire arrays (NWAs) on 3D graphene foam (Cl-ZnO NWAs/GF), and investigates its applications as a highly efficient field emitter and photocatalyst. The introduction of Cl-dopant in ZnO increases free electrons in the conduction band of ZnO and also leads to the rough surface of ZnO NWAs, which greatly improves the field emission properties of the Cl-ZnO NWAs/GF. The Cl-ZnO NWAs/GF demonstrates a low turn-on field (≈1.6 V μm(-1)), a high field enhancement factor (≈12844), and excellent field emission stability. Also, the Cl-ZnO NWAs/GF shows high photocatalytic efficiency under UV irradiation, enabling photodegradation of organic dyes such as RhB within ≈75 min, with excellent recyclability. The excellent photocatalytic performance of the Cl-ZnO NWAs/GF originates from the highly efficient charge separation efficiency at the heterointerface of Cl-ZnO and GF, as well as improved electron transport efficiency due to the doping of Cl. These results open up new possibilities of using Cl-ZnO and graphene-based hybrid nanostructures for various functional devices.

  5. Biomolecule-adsorption-dependent piezoelectric output of ZnO nanowire nanogenerator and its application as self-powered active biosensor.

    PubMed

    Zhao, Yayu; Deng, Ping; Nie, Yuxin; Wang, Penglei; Zhang, Yan; Xing, Lili; Xue, Xinyu

    2014-07-15

    Self-powered active biosensor has been realized from ZnO nanowire (NW) nanogenerator (NG). The piezoelectric output generated by ZnO NW NG can act not only as a power source for driving the device, but also as a biosensing signal. After immersing in 10(-3) g ml(-1) human immunoglobulin G (IgG), the piezoelectric output voltage of the device under compressive deformation decreases from 0.203±0.0176 V (without IgG) to 0.038±0.0035 V. Such a self-powered biosensor has higher response than transistor-type biosensor (I-V behavior). The response of self-powered biosensor is in a linear relationship with IgG concentration (logarithm, 10(-7)-10(-3) g ml(-1)) and the limit of detection (LOD) on IgG of the device is about 6.9 ng ml(-1). The adsorption of biomolecules on the surface of ZnO NWs can modify the free-carrier density, which vary the screening effect of free-carriers on the piezoelectric output. The present results demonstrate a feasible approach for actively detecting biomolecules by coupling the piezotronic and biosensing characteristics of ZnO NWs.

  6. A Heterojunction Design of Single Layer Hole Tunneling ZnO Passivation Wrapping around TiO2Nanowires for Superior Photocatalytic Performance

    PubMed Central

    Ghobadi, Amir; Ulusoy, T. Gamze; Garifullin, Ruslan; Guler, Mustafa O.; Okyay, Ali K.

    2016-01-01

    Nanostructured hybrid heterojunctions have been studied widely for photocatalytic applications due to their superior optical and structural properties. In this work, the impact of angstrom thick atomic layer deposited (ALD) ZnO shell layer on photocatalytic activity (PCA) of hydrothermal grown single crystalline TiO2 nanowires (NWs) is systematically explored. We showed that a single cycle of ALD ZnO layer wrapped around TiO2 NWs, considerably boosts the PCA of the heterostructure. Subsequent cycles, however, gradually hinder the photocatalytic activity (PCA) of the TiO2 NWs. Various structural, optical, and transient characterizations are employed to scrutinize this unprecedented change. We show that a single atomic layer of ZnO shell not only increases light harvesting capability of the heterostructure via extension of the absorption toward visible wavelengths, but also mitigates recombination probability of carriers through reduction of surface defects density and introduction of proper charge separation along the core-shell interface. Furthermore, the ultrathin ZnO shell layer allows a strong contribution of the core (TiO2) valence band holes through tunneling across the ultrathin interface. All mechanisms responsible for this enhanced PCA of heterostructure are elucidated and corresponding models are proposed. PMID:27464476

  7. TiO2/BiVO4 Nanowire Heterostructure Photoanodes Based on Type II Band Alignment

    PubMed Central

    2016-01-01

    Metal oxides that absorb visible light are attractive for use as photoanodes in photoelectrosynthetic cells. However, their performance is often limited by poor charge carrier transport. We show that this problem can be addressed by using separate materials for light absorption and carrier transport. Here, we report a Ta:TiO2|BiVO4 nanowire photoanode, in which BiVO4 acts as a visible light-absorber and Ta:TiO2 acts as a high surface area electron conductor. Electrochemical and spectroscopic measurements provide experimental evidence for the type II band alignment necessary for favorable electron transfer from BiVO4 to TiO2. The host–guest nanowire architecture presented here allows for simultaneously high light absorption and carrier collection efficiency, with an onset of anodic photocurrent near 0.2 V vs RHE, and a photocurrent density of 2.1 mA/cm2 at 1.23 V vs RHE. PMID:27163032

  8. Chemically grown vertically aligned 1D ZnO nanorods with CdS coating for efficient quantum dot sensitized solar cells (QDSSC): a controlled synthesis route.

    PubMed

    Mali, Sawanta S; Kim, Hyungjin; Patil, Pramod S; Hong, Chang Kook

    2013-12-28

    In the present article, vertically aligned ZnO nanorod arrays were synthesized by an aqueous chemical growth (ACG) route on a fluoride doped tin oxide (FTO) coated glass substrate. These nanorods were further sensitized with cadmium sulfide (CdS) quantum dots (QDs) by a successive ionic layer adsorption and reaction (SILAR) technique. The synthesized CdS coated ZnO nanorods were characterized for their structural and morphological properties with X-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS) and field emission scanning electron microscopy (FESEM). Finally, prepared CdS coated 1D ZnO photoelectrodes were tested for their photoelectrochemical performance. Our results show that the sample deposited after 40 SILAR cycles shows 5.61 mA cm(-2) short current density (JSC) with η = 1.61% power conversion efficiency.

  9. Large-Area Cross-Aligned Silver Nanowire Electrodes for Flexible, Transparent, and Force-Sensitive Mechanochromic Touch Screens.

    PubMed

    Cho, Seungse; Kang, Saewon; Pandya, Ashish; Shanker, Ravi; Khan, Ziyauddin; Lee, Youngsu; Park, Jonghwa; Craig, Stephen L; Ko, Hyunhyub

    2017-04-12

    Silver nanowire (AgNW) networks are considered to be promising structures for use as flexible transparent electrodes for various optoelectronic devices. One important application of AgNW transparent electrodes is the flexible touch screens. However, the performances of flexible touch screens are still limited by the large surface roughness and low electrical to optical conductivity ratio of random network AgNW electrodes. In addition, although the perception of writing force on the touch screen enables a variety of different functions, the current technology still relies on the complicated capacitive force touch sensors. This paper demonstrates a simple and high-throughput bar-coating assembly technique for the fabrication of large-area (>20 × 20 cm(2)), highly cross-aligned AgNW networks for transparent electrodes with the sheet resistance of 21.0 Ω sq(-1) at 95.0% of optical transmittance, which compares favorably with that of random AgNW networks (sheet resistance of 21.0 Ω sq(-1) at 90.4% of optical transmittance). As a proof of concept demonstration, we fabricate flexible, transparent, and force-sensitive touch screens using cross-aligned AgNW electrodes integrated with mechanochromic spiropyran-polydimethylsiloxane composite film. Our force-sensitive touch screens enable the precise monitoring of dynamic writings, tracing and drawing of underneath pictures, and perception of handwriting patterns with locally different writing forces. The suggested technique provides a robust and powerful platform for the controllable assembly of nanowires beyond the scale of conventional fabrication techniques, which can find diverse applications in multifunctional flexible electronic and optoelectronic devices.

  10. Fabrication of Ag nanowire and Al-doped ZnO hybrid transparent electrodes

    NASA Astrophysics Data System (ADS)

    You, Sslimsearom; Park, Yong Seo; Choi, Hyung Wook; Kim, Kyung Hwan

    2016-01-01

    Among the materials used as transparent electrodes, silver nanowires (AgNWs) have attracted attention because of their high transmittance and excellent conductivity. However, AgNWs have shortcomings, including their poor adhesion, oxidation by atmospheric oxygen, and unstable characteristics at high temperature. To overcome these shortcomings, multi-layer thin films with an aluminum-doped zinc oxide (AZO)/AgNW/AZO structure were fabricated using facing targets sputtering. The samples heated to 350 °C exhibited stable electrical characteristics. In addition, the adhesion to the substrate was improved compared with AgNWs layer. The AZO/AgNW/AZO thin films with multilayer structure overcame the shortcomings of AgNWs, and we propose their use as transparent electrodes with excellent properties for optoelectronic applications.

  11. Polyaniline nanowire arrays aligned on nitrogen-doped carbon fabric for high-performance flexible supercapacitors.

    PubMed

    Yu, Pingping; Li, Yingzhi; Yu, Xinyi; Zhao, Xin; Wu, Lihao; Zhang, Qinghua

    2013-09-24

    A combination of vertical polyaniline (PANI) nanowire arrays and nitrogen plasma etched carbon fiber cloths (eCFC) was fabricated to create 3D nanostructured PANI/eCFC composites. The small size of the highly ordered PANI nanowires can greatly reduce the scale of the diffusion length, allowing for the improved utilization of electrode materials. A two-electrode flexible supercapacitor based on PANI/eCFC demonstrates a high specific capacitance (1035 F g(-1) at a current density of 1 A g(-1)), good rate capability (88% capacity retention at 8 A g(-1)), and long-term cycle life (10% capacity loss after 5000 cycles). The lightweight, low-cost, flexible composites are promising candidates for use in energy storage device applications.

  12. A case for ZnO nanowire field emitter arrays in advanced x-ray source applications

    NASA Astrophysics Data System (ADS)

    Robinson, Vance S.; Bergkvist, Magnus; Chen, Daokun; Chen, Jun; Huang, Mengbing

    2016-09-01

    Reviewing current efforts in X-ray source miniaturization reveals a broad spectrum of applications: Portable and/or remote nondestructive evaluation, high throughput protein crystallography, invasive radiotherapy, monitoring fluid flow and particulate generation in situ, and portable radiography devices for battle-front or large scale disaster triage scenarios. For the most part, all of these applications are being addressed with a top-down approach aimed at improving portability, weight and size. That is, the existing system or a critical sub-component is shrunk in some manner in order to miniaturize the overall package. In parallel to top-down x-ray source miniaturization, more recent efforts leverage field emission and semiconductor device fabrication techniques to achieve small scale x-ray sources via a bottom-up approach where phenomena effective at a micro/nanoscale are coordinated for macro-scale effect. The bottom-up approach holds potential to address all the applications previously mentioned but its entitlement extends into new applications with much more ground-breaking potential. One such bottom-up application is the distributed x-ray source platform. In the medical space, using an array of microscale x-ray sources instead of a single source promises significant reductions in patient dose as well as smaller feature detectability and fewer image artifacts. Cold cathode field emitters are ideal for this application because they can be gated electrostatically or via photonic excitation, they do not generate excessive heat like other common electron emitters, they have higher brightness and they are relatively compact. This document describes how ZnO nanowire field emitter arrays are well suited for distributed x-ray source applications because they hold promise in each of the following critical areas: emission stability, simple scalable fabrication, performance, radiation resistance and photonic coupling.

  13. Efficient Z-scheme charge separation in novel vertically aligned ZnO/CdSSe nanotrees

    NASA Astrophysics Data System (ADS)

    Li, Zhengxin; Nieto-Pescador, Jesus; Carson, Alexander J.; Blake, Jolie C.; Gundlach, Lars

    2016-04-01

    A new tree-like ZnO/CdSSe nanocomposite with CdSSe branches grown on ZnO nanowires prepared via a two-step chemical vapor deposition is presented. The nanotrees (NTs) are vertically aligned on a substrate. The CdSSe branches result in strong visible light absorption and form a type-II heterojunction with the ZnO stem that facilitates efficient electron transfer. A combination of photoluminescence spectroscopy and lifetime measurements indicates that the NTs are promising materials for applications that benefit from a Z-scheme charge transfer mechanism. Vertically aligned branched ZnO nanowires can provide direct electron transport pathways to substrates and allow for efficient charge separation. These advantages of nanoscale hierarchical heterostructures make ZnO/CdSSe NTs a promising semiconductor material for solar cells, and other opto-electronic devices.

  14. Vertically aligned crystalline silicon nanowires with controlled diameters for energy conversion applications: Experimental and theoretical insights

    SciTech Connect

    Razek, Sara Abdel; Swillam, Mohamed A.; Allam, Nageh K.

    2014-05-21

    Vertically orientated single crystalline silicon nanowire (SiNW) arrays with controlled diameters are fabricated via a metal-assisted chemical etching method. The diameter of the fabricated nanowires is controlled by simply varying the etching time in HF/H{sub 2}O{sub 2} electrolytes. The fabricated SiNWs have diameters ranging from 117 to 650 nm and lengths from 8 to 18 μm. The optical measurements showed a significant difference in the reflectance/absorption of the SiNWs with different diameters, where the reflectance increases with increasing the diameter of the SiNWs. The SiNWs showed significant photoluminescence (PL) emission spectra with peaks lying between 380 and 670 nm. The PL intensity increases as the diameter increases and shows red shift for peaks at ∼670 nm. The increase or decrease of reflectivity is coincident with PL intensity at wavelength ∼660 nm. The x-ray diffraction patterns confirm the high crystallinity of the fabricated SiNWs. In addition, the Raman spectra showed a shift in the first order transverse band toward lower frequencies compared to that usually seen for c-Si. Finite difference time domain simulations have been performed to confirm the effect of change of diameter on the optical properties of the nanowires. The simulation results showed good agreement with the experimental results for the SiNWs of different diameters.

  15. In situ growth of aligned CdS nanowire arrays on Cd foil and their optical and electron field emission properties

    SciTech Connect

    Qian, G. X.; Hung, T. F.; Chu, Paul K.; Huo, K. F.; Fu, J. J.

    2008-07-01

    Aligned CdS nanowire arrays have been fabricated directly on a Cd foil via a simple solvothermal method. The metal Cd foil serves as both the Cd source and substrate during fabrication of the aligned CdS nanowire arrays. The morphology, structure, and composition of the samples are characterized by x-ray diffraction, field-emission scanning electron microscopy, transmission electron microscopy, energy-dispersive x-ray spectroscopy, and selected-area electron diffraction, and the results reveal the formation of aligned single-crystalline CdS nanowires with uniform diameters of 20-40 nm. The photoluminescence and Raman spectra disclose the optical properties of the products and the possible growth mechanism is suggested. The electron field emission properties are also investigated and analyzed. The screening effect is observed to play a vital role in the electron field emission properties due to the coalescent ends of the nanowires. The simple synthesis methodology in conjunction with the good field emission and optical properties makes the materials both scientifically and technologically interesting.

  16. Large-scale growth of well-aligned SiC tower-like nanowire arrays and their field emission properties.

    PubMed

    Wang, Lin; Li, Chengming; Yang, Yang; Chen, Shanliang; Gao, Fengmei; Wei, Guodong; Yang, Weiyou

    2015-01-14

    Fabrication of well-aligned one-dimensional (1D) nanostrucutres is critically important and highly desired since it is the key step to realize the patterned arrays to be used as the display units. In the present work, we report the large-scale and well-aligned growth of n-type SiC nanowire arrays on the 6H-SiC wafer substrates via pyrolysis of polymeric precursors assisted by Au catalysts. The obtained n-type SiC nanowires are highly qualified with sharp tips and numerous sharp corners around the wire bodies, which bring the emitters excellent field emission (FE) performance with low turn-on fields (1.50 V/μm), low threshold fields (2.65 V/μm), and good current emission stabilities (fluctuation <3.8%). The work abilities of the n-type SiC tower-like nanowire arrays under high-temperature harsh environments have been investigated, suggesting that the resultant field emitters could be well serviced up to 500 °C. The temperature-enhanced FE behaviors could be attributed to the reduction of the work function induced by the rise of temperatures and the incorporated N dopants. It is believed that the present well-aligned n-type SiC tower-like nanowire arrays could meet nearly all stringent requirements for an ideal FE emitter with excellent FE properties, making their applications very promising in displays and other electronic nanodevices.

  17. Spatial distribution of neutral oxygen vacancies on ZnO nanowire surfaces: An investigation combining confocal microscopy and first principles calculations

    NASA Astrophysics Data System (ADS)

    Mun Wong, Kin; Alay-e-Abbas, S. M.; Fang, Yaoguo; Shaukat, A.; Lei, Yong

    2013-07-01

    A qualitative approach using room-temperature confocal microscopy is employed to investigate the spatial distribution of shallow and deep oxygen vacancy (VO) concentrations on the polar (0001) and non-polar (101¯0) surfaces of zinc oxide (ZnO) nanowires (NWs). Using the spectral intensity variation of the confocal photoluminescence of the green emission at different spatial locations on the surface, the VO concentrations of an individual ZnO NW can be obtained. The green emission at different spatial locations on the ZnO NW polar (0001) and non-polar (101¯0) surfaces is found to have maximum intensity near the NW edges, decreasing to a minimum near the NW center. First-principles calculations using simple supercell-slab (SS) models are employed to approximate/model the defects on the ZnO NW (101¯0) and (0001) surfaces. These calculations give increased insight into the physical mechanism behind the green emission spectral intensity and the characteristics of an individual ZnO NW. The highly accurate density functional theory (DFT)-based full-potential linearized augmented plane-wave plus local orbitals (FP-LAPW + lo) method is used to compute the defect formation energy (DFE) of the SSs. Previously, using these SS models, it was demonstrated through the FP-LAPW + lo method that in the presence of oxygen vacancies at the (0001) surface, the phase transformation of the SSs in the graphite-like structure to the wurtzite lattice structure will occur even if the thickness of the graphite-like SSs are equal to or less than 4 atomic graphite-like layers [Wong et al., J. Appl. Phys. 113, 014304 (2013)]. The spatial profile of the neutral VO DFEs from the DFT calculations along the ZnO [0001] and [101¯0] directions is found to reasonably explain the spatial profile of the measured confocal luminescence intensity on these surfaces, leading to the conclusion that the green emission spectra of the NWs likely originate from neutral oxygen vacancies. Another significant

  18. CdS/CdSe quantum dot shell decorated vertical ZnO nanowire arrays by spin-coating-based SILAR for photoelectrochemical cells and quantum-dot-sensitized solar cells.

    PubMed

    Zhang, Ran; Luo, Qiu-Ping; Chen, Hong-Yan; Yu, Xiao-Yun; Kuang, Dai-Bin; Su, Cheng-Yong

    2012-04-23

    A CdS/CdSe composite shell is assembled onto the surface of ZnO nanowire arrays with a simple spin-coating-based successive ionic layer adsorption and reaction method. The as-prepared photoelectrode exhibit a high photocurrent density in photoelectrochemical cells and also generates good power conversion efficiency in quantum-dot-sensitized solar cells.

  19. Silver Nanowires Binding with Sputtered ZnO to Fabricate Highly Conductive and Thermally Stable Transparent Electrode for Solar Cell Applications.

    PubMed

    Singh, Manjeet; Rana, Tanka R; Kim, SeongYeon; Kim, Kihwan; Yun, Jae Ho; Kim, JunHo

    2016-05-25

    Silver nanowire (AgNW) film has been demonstrated as excellent and low cost transparent electrode in organic solar cells as an alternative to replace scarce and expensive indium tin oxide (ITO). However, the low contact area and weak adhesion with low-lying surface as well as junction resistance between nanowires have limited the applications of AgNW film to thin film solar cells. To resolve this problem, we fabricated AgNW film as transparent conductive electrode (TCE) by binding with a thin layer of sputtered ZnO (40 nm) which not only increased contact area with low-lying surface in thin film solar cell but also improved conductivity by connecting AgNWs at the junction. The TCE thus fabricated exhibited transparency and sheet resistance of 92% and 20Ω/□, respectively. Conductive atomic force microscopy (C-AFM) study revealed the enhancement of current collection vertically and laterally through AgNWs after coating with ZnO thin film. The CuInGaSe2 solar cell with TCE of our AgNW(ZnO) demonstrated the maximum power conversion efficiency of 13.5% with improved parameters in comparison to solar cell fabricated with conventional ITO as TCE.

  20. Immobilization of horseradish peroxidase on ZnO nanowires/macroporous SiO2 composites for the complete decolorization of anthraquinone dyes.

    PubMed

    Sun, Huaiyan; Jin, Xinyu; Jiang, Feng; Zhang, Ruifeng

    2017-02-21

    A Zinc Oxide (ZnO) nanowires/ macroporous Silicon dioxide (SiO2 ) composite was used as support to immobilize horseradish peroxidase (HRP) simply by in-situ cross-linking method. As cross-linker was adsorbed on the surface of ZnO nanowires, the cross-linked HRP was quite different from the traditional cross-linking enzyme aggregates (CLEAs) on both structure and catalytic performance. Among three epoxy compounds diethylene glycol diglycidyl ether (DDE) was the best cross-linker, with which the loading amount of HRP with pI of 5.3 reached as high as 118.1 mg/g and specific activity was up to 14.9 U/mg-support. The mass-loss of HRP cross-linked with DDE was negligible during 50 h leaching at 4 °C, and the thermal stability of the immobilized HRP was also quite good. The catalytic performance of immobilized HRP to decolorize anthraquinone dye was explored by using Reactive Blue 19 (RB 19) and Acid Violet 109 (AV 109) as model substrates. The results indicated that the immobilized HRP exhibited high decolorization efficiency and good reusability. The decolorization efficiency reached 94.3% and 95.9% for AV 109 and RB 19 within the first 30 min, respectively. A complete decolorization of these two dyes has been realized within 2∼3 hours by using this new biocatalysis system. This article is protected by copyright. All rights reserved.

  1. Au catalyst assisted growth of ZnO nanowires by vapour phase transport method on p-Si and fabrication of p-Si/n-ZnO heterojunction diode

    NASA Astrophysics Data System (ADS)

    Bhat, Shashidhara; V, Shrisha B.; Naik, K. Gopalakrishna

    2015-06-01

    In this work ZnO nanowires were grown on p type silicon (p-Si) substrate using Vapor-Liquid-Solid (VLS) approach using Au as catalyst by vapor phase transport growth method. Surface morphology and structural properties of the grown ZnO nanowires were examined by Scanning electron microscope (SEM) and X-ray diffraction (XRD), respectively. Using the n-ZnO nanowires (NW) grown on p-type silicon, n-ZnO NW/p-Si heterojunction diode was fabricated. The rectification property of the fabricated diode was studied by room temperature as well as high temperature (up to 370 K) current-voltage (I-V) measurements.

  2. Au catalyst assisted growth of ZnO nanowires by vapour phase transport method on p-Si and fabrication of p-Si/n-ZnO heterojunction diode

    SciTech Connect

    Bhat, Shashidhara; V, Shrisha B.; Naik, K Gopalakrishna

    2015-06-24

    In this work ZnO nanowires were grown on p type silicon (p-Si) substrate using Vapor-Liquid-Solid (VLS) approach using Au as catalyst by vapor phase transport growth method. Surface morphology and structural properties of the grown ZnO nanowires were examined by Scanning electron microscope (SEM) and X-ray diffraction (XRD), respectively. Using the n-ZnO nanowires (NW) grown on p-type silicon, n-ZnO NW/p-Si heterojunction diode was fabricated. The rectification property of the fabricated diode was studied by room temperature as well as high temperature (up to 370 K) current-voltage (I-V) measurements.

  3. Catalyst-free growth of ZnO nanowires on ITO seed layer/glass by thermal evaporation method: Effects of ITO seed layer laser annealing temperature

    NASA Astrophysics Data System (ADS)

    Alsultany, Forat H.; Hassan, Z.; Ahmed, Naser M.

    2016-04-01

    Novel catalyst-free growth of ZnO nanowires (ZnO-NWs) on ITO seeds/glass substrate by thermal evaporation method, and effects of continuous wave CO2 laser thermal annealed seed layer on the morphology and properties of ZnO-NWs growth were investigated. The effects of sputtered ITO seed layer laser annealing temperature on the morphological, structural, and optical properties of ZnO-NWs was systematically investigated at temperatures 250, 350, and 450 °C, respectively. The surface morphology and structure of the seeds and the products of ZnO-NWs were characterized in detail by using field emission scanning electron microscopy, atomic force microscopy, and X-ray diffraction. Optical properties were further examined through photoluminescence, and UV-Vis spectrophotometer. A growth mechanism was proposed on the basis of obtained results. The results showed that the nanowires were strongly dependent on the seed layer annealing temperatures, which played an important role in nucleation and dissimilar growth of the nanowires with varying sizes and geometric shapes.

  4. Highly flexible, transparent, conductive and antibacterial films made of spin-coated silver nanowires and a protective ZnO layer

    NASA Astrophysics Data System (ADS)

    Chen, Youxin; Lan, Wei; Wang, Junya; Zhu, Ranran; Yang, Zhiwei; Ding, Delei; Tang, Guomei; Wang, Kairong; Su, Qing; Xie, Erqing

    2016-02-01

    We prepared highly flexible, transparent, conductive and antibacterial film by spin coating a silver nanowire suspension on a poly (ethylene terephthalate) (PET) substrate. The ZnO layer covered the conductive silver nanowire (AgNW) network to protect the metal nanowires from oxidization and enhance both wire-to-wire adhesion and wire-to-substrate adhesion. It is found that the number of AgNW coatings correlates with both the sheet resistance (Rs) and the transmittance of the AgNW/ZnO composite films. An excellent 92% optical transmittance in the visible range and a surface sheet resistance of only 9 Ω sq-1 has been achieved, respectively. Even after bending 1000 times (5 mm bending radius), we found no significant change in the sheet resistance or optical transmittance. The real-time sheet resistance measured as a function of bending radius also remains stable even at the smallest measured bending radius (1 mm). The AgNW/ZnO composite films also show antibacterial effects which could be useful for the fabrication of wearable electronic devices.

  5. Interfacially Al-doped ZnO nanowires: greatly enhanced near band edge emission through suppressed electron-phonon coupling and confined optical field.

    PubMed

    Wu, Yiming; Dai, Yanmeng; Jiang, Shenlong; Ma, Chao; Lin, Yue; Du, Dongxue; Wu, Yukun; Ding, Huaiyi; Zhang, Qun; Pan, Nan; Wang, Xiaoping

    2017-04-05

    Aluminium (Al)-doped zinc oxide (ZnO) nanowires (NWs) with a unique core-shell structure and a Δ-doping profile at the interface were successfully grown using a combination of chemical vapor deposition re-growth and few-layer AlxOy atomic layer deposition. Unlike the conventional heavy doping which degrades the near-band-edge (NBE) luminescence and increases the electron-phonon coupling (EPC), it was found that there was an over 20-fold enhanced NBE emission and a notably-weakened EPC in this type of interfacially Al-doped ZnO NWs. Further experiments revealed a greatly suppressed nonradiative decay process and a much enhanced radiative recombination rate. By comparing the finite-difference time-domain simulation with the experimental results from intentionally designed different NWs, this enhanced radiative decay rate was attributed to the Purcell effect induced by the confined and intensified optical field within the interfacial layer. The ability to manipulate the confinement, transport and relaxation dynamics of ZnO excitons can be naturally guaranteed with this unique interfacial Δ-doping strategy, which is certainly desirable for the applications using ZnO-based nano-photonic and nano-optoelectronic devices.

  6. High-Efficiency Nanowire Solar Cells with Omnidirectionally Enhanced Absorption Due to Self-Aligned Indium-Tin-Oxide Mie Scatterers.

    PubMed

    van Dam, Dick; van Hoof, Niels J J; Cui, Yingchao; van Veldhoven, Peter J; Bakkers, Erik P A M; Gómez Rivas, Jaime; Haverkort, Jos E M

    2016-12-27

    Photovoltaic cells based on arrays of semiconductor nanowires promise efficiencies comparable or even better than their planar counterparts with much less material. One reason for the high efficiencies is their large absorption cross section, but until recently the photocurrent has been limited to less than 70% of the theoretical maximum. Here we enhance the absorption in indium phosphide (InP) nanowire solar cells by employing broadband forward scattering of self-aligned nanoparticles on top of the transparent top contact layer. This results in a nanowire solar cell with a photovoltaic conversion efficiency of 17.8% and a short-circuit current of 29.3 mA/cm(2) under 1 sun illumination, which is the highest reported so far for nanowire solar cells and among the highest reported for III-V solar cells. We also measure the angle-dependent photocurrent, using time-reversed Fourier microscopy, and demonstrate a broadband and omnidirectional absorption enhancement for unpolarized light up to 60° with a wavelength average of 12% due to Mie scattering. These results unambiguously demonstrate the potential of semiconductor nanowires as nanostructures for the next generation of photovoltaic devices.

  7. Growth of aligned single-crystalline rutile TiO2 nanowires on arbitrary substrates and their application in dye-sensitized solar cells

    SciTech Connect

    Kumar, Akshay; Madaria, Anuj R.; Zhou, Chongwu

    2010-05-06

    TiO{sub 2} is a wide band gap semiconductor with important applications in photovoltaic cells and photocatalysis. In this paper, we report synthesis of single-crystalline rutile phase TiO{sub 2} nanowires on arbitrary substrates, including fluorine-doped tin oxide (FTO), glass slides, tin-doped indium oxide (ITO), Si/SiO{sub 2}, Si(100), Si(111), and glass rods. By controlling the growth parameters such as growth temperature, precursor concentrations, and so forth, we demonstrate that anisotropic growth of TiO{sub 2} is possible leading to various morphologies of nanowires. Optimization of the growth recipe leads to well-aligned vertical array of TiO{sub 2} nanowires on both FTO and glass substrates. Effects of various titanium precursors on the growth kinetics, especially on the growth rate of nanowires, are also studied. Finally, application of vertical array of TiO{sub 2} nanowires on FTO as the photoanode is demonstrated in dye-sensitized solar cell with an efficiency of 2.9 ± 0.2%.

  8. Controllable synthesis of branched ZnO/Si nanowire arrays with hierarchical structure

    PubMed Central

    2014-01-01

    A rational approach for creating branched ZnO/Si nanowire arrays with hierarchical structure was developed based on a combination of three simple and cost-effective synthesis pathways. The crucial procedure included growth of crystalline Si nanowire arrays as backbones by chemical etching of Si substrates, deposition of ZnO thin film as a seed layer by magnetron sputtering, and fabrication of ZnO nanowire arrays as branches by hydrothermal growth. The successful synthesis of ZnO/Si heterogeneous nanostructures was confirmed by morphologic, structural, and optical characterizations. The roles of key experimental parameters, such as the etchant solution, the substrate direction, and the seed layer on the hierarchical nanostructure formation, were systematically investigated. It was demonstrated that an etchant solution with an appropriate redox potential of the oxidant was crucial for a moderate etching speed to achieve a well-aligned Si nanowire array with solid and round surface. Meanwhile, the presence of gravity gradient was a key issue for the growth of branched ZnO nanowire arrays. The substrate should be placed vertically or facedown in contrast to the solution surface during the hydrothermal growth. Otherwise, only the condensation of the ZnO nanoparticles took place in a form of film on the substrate surface. The seed layer played another important role in the growth of ZnO nanowire arrays, as it provided nucleation sites and determined the growing direction and density of the nanowire arrays for reducing the thermodynamic barrier. The results of this study might provide insight on the synthesis of hierarchical three-dimensional nanostructure materials and offer an approach for the development of complex devices and advanced applications. PMID:25024688

  9. Stereo-epitaxial growth of single-crystal Ni nanowires and nanoplates from aligned seed crystals

    NASA Astrophysics Data System (ADS)

    Lee, Hyoban; Yoo, Youngdong; Kang, Taejoon; Lee, Jiyoung; Kim, Eungwang; Fang, Xiaosheng; Lee, Sungyul; Kim, Bongsoo

    2016-05-01

    Epitaxially grown anisotropic Ni nanostructures are promising building blocks for the development of miniaturized and stereo-integrated data storage kits because they can store multiple magnetic domain walls (DWs). Here, we report stereo-epitaxially grown single-crystalline Ni nanowires (NWs) and nanoplates, and their magnetic properties. Vertical and inclined Ni NWs were grown at the center and edge regions of c-cut sapphire substrates, respectively. Vertical Ni nanoplates were grown on r-cut sapphire substrates. The morphology and growth direction of Ni nanostructures can be steered by seed crystals. Cubic Ni seeds grow into vertical Ni NWs, tetrahedral Ni seeds grow into inclined Ni NWs, and triangular Ni seeds grow into vertical Ni nanoplates. The shapes of the Ni seeds are determined by the interfacial energy between the bottom plane of the seeds and the substrates. The as-synthesized Ni NWs and nanoplates have blocking temperature values greater than 300 K at 500 Oe, verifying that these Ni nanostructures can form large magnetic DWs with high magnetic anisotropy properties. We anticipate that epitaxially grown Ni NWs and nanoplates will be used in various types of 3-dimensional magnetic devices.Epitaxially grown anisotropic Ni nanostructures are promising building blocks for the development of miniaturized and stereo-integrated data storage kits because they can store multiple magnetic domain walls (DWs). Here, we report stereo-epitaxially grown single-crystalline Ni nanowires (NWs) and nanoplates, and their magnetic properties. Vertical and inclined Ni NWs were grown at the center and edge regions of c-cut sapphire substrates, respectively. Vertical Ni nanoplates were grown on r-cut sapphire substrates. The morphology and growth direction of Ni nanostructures can be steered by seed crystals. Cubic Ni seeds grow into vertical Ni NWs, tetrahedral Ni seeds grow into inclined Ni NWs, and triangular Ni seeds grow into vertical Ni nanoplates. The shapes of the Ni

  10. Field-Effect Modulation of Ambipolar Doping and Domain Wall Band Alignment in P-type Vanadium Dioxide Nanowires

    NASA Astrophysics Data System (ADS)

    Hou, Yasen; Peng, Xingyue; Yang, Yiming; Yu, Dong

    The sub-picosecond metal-insulator phase transition in vanadium dioxide (VO2) has attracted extensive attention with potential applications in ultrafast Mott transistors. However, the development of VO2-based transistors lags behind, owing to the lack of an efficient and hysteresis-free electrostatic doping control. Here we report the first synthesis of p-type single crystalline VO2nanowires via catalyst-free chemical vapor deposition. The p-type doping was unambiguously confirmed by both solid and electrochemical gating methods, and further evidenced by the scanning photocurrent microscopic measurements. Interestingly, we observed that the photocurrent spot polarity at the metal-insulator domain walls was reversibly switched by electrochemical gating, which indicates a band bending flipping. Furthermore, we eliminated the common hysteresis in gate sweep and greatly shortened the transistor response time via a hybrid gating method, which combines the merits of liquid ionic and solid gating. The capability of efficient field effect modulation of ambipolar conduction and band alignment offers new opportunities on understanding the phase transition mechanism and enables novel electronic applications based on VO2.

  11. Dye-sensitized solar cells with vertically aligned TiO2 nanowire arrays grown on carbon fibers.

    PubMed

    Cai, Xin; Wu, Hongwei; Hou, Shaocong; Peng, Ming; Yu, Xiao; Zou, Dechun

    2014-02-01

    One-dimensional semiconductor TiO2 nanowires (TNWs) have received widespread attention from solar cell and related optoelectronics scientists. The controllable synthesis of ordered TNW arrays on arbitrary substrates would benefit both fundamental research and practical applications. Herein, vertically aligned TNW arrays in situ grown on carbon fiber (CF) substrates through a facile, controllable, and seed-assisted thermal process is presented. Also, hierarchical TiO2 -nanoparticle/TNW arrays were prepared that favor both the dye loading and depressed charge recombination of the CF/TNW photoanode. An impressive conversion efficiency of 2.48 % (under air mass 1.5 global illumination) and an apparent efficiency of 4.18 % (with a diffuse board) due to the 3D light harvesting of the wire solar cell were achieved. Moreover, efficient and inexpensive wire solar cells made from all-CF electrodes and completely flexible CF-based wire solar cells were demonstrated, taking into account actual application requirements. This work may provide an intriguing avenue for the pursuit of lightweight, cost-effective, and high-performance flexible/wearable solar cells.

  12. Stereo-epitaxial growth of single-crystal Ni nanowires and nanoplates from aligned seed crystals.

    PubMed

    Lee, Hyoban; Yoo, Youngdong; Kang, Taejoon; Lee, Jiyoung; Kim, Eungwang; Fang, Xiaosheng; Lee, Sungyul; Kim, Bongsoo

    2016-05-21

    Epitaxially grown anisotropic Ni nanostructures are promising building blocks for the development of miniaturized and stereo-integrated data storage kits because they can store multiple magnetic domain walls (DWs). Here, we report stereo-epitaxially grown single-crystalline Ni nanowires (NWs) and nanoplates, and their magnetic properties. Vertical and inclined Ni NWs were grown at the center and edge regions of c-cut sapphire substrates, respectively. Vertical Ni nanoplates were grown on r-cut sapphire substrates. The morphology and growth direction of Ni nanostructures can be steered by seed crystals. Cubic Ni seeds grow into vertical Ni NWs, tetrahedral Ni seeds grow into inclined Ni NWs, and triangular Ni seeds grow into vertical Ni nanoplates. The shapes of the Ni seeds are determined by the interfacial energy between the bottom plane of the seeds and the substrates. The as-synthesized Ni NWs and nanoplates have blocking temperature values greater than 300 K at 500 Oe, verifying that these Ni nanostructures can form large magnetic DWs with high magnetic anisotropy properties. We anticipate that epitaxially grown Ni NWs and nanoplates will be used in various types of 3-dimensional magnetic devices.

  13. Microstructural changes in CdSe-coated ZnO nanowires evaluated by in situ annealing in transmission electron microscopy and x-ray diffraction.

    PubMed

    Majidi, Hasti; Winkler, Christopher R; Taheri, Mitra L; Baxter, Jason B

    2012-07-05

    We report on the crystallite growth and phase change of electrodeposited CdSe coatings on ZnO nanowires during annealing. Both in situ transmission electron microscopy (TEM) and x-ray diffraction (XRD) reveal that the nanocrystal size increases from ∼3 to ∼10 nm upon annealing at 350 °C for 1 h and then to more than 30 nm during another 1 h at 400 °C, exhibiting two distinct growth regimes. Nanocrystal growth occurs together with a structural change from zinc blende to wurtzite. The structural transition begins at 350 °C, which results in the formation of stacking faults. Increased crystallite size, comparable to the coating thickness, can improve charge separation in extremely thin absorber solar cells. We demonstrate a nearly two-fold improvement in power conversion efficiency upon annealing.

  14. Improvement of electroluminescence performance by integration of ZnO nanowires and single-crystalline films on ZnO/GaN heterojunction

    SciTech Connect

    Shi, Zhifeng; Zhang, Yuantao Cui, Xijun; Wu, Bin; Zhuang, Shiwei; Yang, Fan; Zhang, Baolin; Du, Guotong; Yang, Xiaotian

    2014-03-31

    Heterojunction light-emitting diodes based on n-ZnO nanowires/ZnO single-crystalline films/p-GaN structure have been demonstrated for an improved electroluminescence performance. A highly efficient ultraviolet emission was observed under forward bias. Compared with conventional n-ZnO/p-GaN structure, high internal quantum efficiency and light extraction efficiency were simultaneously considered in the proposed diode. In addition, the diode can work continuously for ∼10 h with only a slight degradation in harsh environments, indicating its good reliability and application prospect in the future. This route opens possibilities for the development of advanced nanoscale devices in which the advantages of ZnO single-crystalline films and nanostructures can be integrated together.

  15. Carrier relaxation through two-electron process during photoconduction in highly UV sensitive quasi-one-dimensional ZnO nanowires

    SciTech Connect

    Bera, A.; Basak, D.

    2008-08-04

    We have investigated the carrier relaxation process during photoconduction in quasi-one-dimensional (Q1D) ZnO nanowires (NWs) of diameters 29-36 nm on different substrates using photocurrent transient measurements. Ultraviolet (UV) sensitive NWs show around three to four orders of change in the photo-to-dark current ratio. Under steady UV illumination, the photocarrier relaxation occurs through two-electron process--carrier loss due to the trapping by the surface states and recombination at the deep defect states. The results demonstrate that the carrier relaxation during photoconduction in Q1D NWs of diameter comparable to the Debye length is also dominated by the surface states.

  16. Water- and humidity-enhanced UV detector by using p-type La-doped ZnO nanowires on flexible polyimide substrate.

    PubMed

    Hsu, Cheng-Liang; Li, Hsieh-Heng; Hsueh, Ting-Jen

    2013-11-13

    High-density La-doped ZnO nanowires (NWs) were grown hydrothermally on flexible polyimide substrate. The length and diameter of the NWs were around 860 nm and 80-160 nm, respectively. All XRD peaks of the La-doped sample shift to a larger angle. The strong PL peak of the La-doped sample is 380 nm, which is close to the 3.3 eV ZnO bandgap. That PL dominated indicates that the La-doped sample has a great amount of oxygen vacancies. The lattice constants ~0.514 nm of the ZnO:La NW were smaller when measured by HR-TEM. The EDX spectrum determined that the La-doped sample contains approximately 1.27 at % La. The La-doped sample was found to be p-type by Hall Effect measurement. The dark current of the p-ZnO:La NWs decreased with increased relative humidity (RH), while the photocurrent of the p-ZnO:La nanowires increased with increased RH. The higher RH environment was improved that UV response performance. Based on the highest 98% RH, the photocurrent/dark current ratio was around 47.73. The UV response of water drops on the p-ZnO:La NWs was around 2 orders compared to 40% RH. In a water environment, the photocurrent/dark current ratio of p-ZnO:La NWs was 212.1, which is the maximum UV response.

  17. Self-assembled, aligned ZnO nanorod buffer layers for high-current-density, inverted organic photovoltaics.

    PubMed

    Rao, Arun D; Karalatti, Suresh; Thomas, Tiju; Ramamurthy, Praveen C

    2014-10-08

    Two different soft-chemical, self-assembly-based solution approaches are employed to grow zinc oxide (ZnO) nanorods with controlled texture. The methods used involve seeding and growth on a substrate. Nanorods with various aspect ratios (1-5) and diameters (15-65 nm) are grown. Obtaining highly oriented rods is determined by the way the substrate is mounted within the chemical bath. Furthermore, a preheat and centrifugation step is essential for the optimization of the growth solution. In the best samples, we obtain ZnO nanorods that are almost entirely oriented in the (002) direction; this is desirable since electron mobility of ZnO is highest along this crystallographic axis. When used as the buffer layer of inverted organic photovoltaics (I-OPVs), these one-dimensional (1D) nanostructures offer: (a) direct paths for charge transport and (b) high interfacial area for electron collection. The morphological, structural, and optical properties of ZnO nanorods are studied using scanning electron microscopy, X-ray diffraction, and ultraviolet-visible light (UV-vis) absorption spectroscopy. Furthermore, the surface chemical features of ZnO films are studied using X-ray photoelectron spectroscopy and contact angle measurements. Using as-grown ZnO, inverted OPVs are fabricated and characterized. For improving device performance, the ZnO nanorods are subjected to UV-ozone irradiation. UV-ozone treated ZnO nanorods show: (i) improvement in optical transmission, (ii) increased wetting of active organic components, and (iii) increased concentration of Zn-O surface bonds. These observations correlate well with improved device performance. The devices fabricated using these optimized buffer layers have an efficiency of ∼3.2% and a fill factor of 0.50; this is comparable to the best I-OPVs reported that use a P3HT-PCBM active layer.

  18. Hydrothermal synthesis of highly crystalline ZnO nanorod arrays: Dependence of morphology and alignment on growth conditions

    NASA Astrophysics Data System (ADS)

    Azzez, Shrook A.; Hassan, Z.; Hassan, J. J.; Alimanesh, M.; Rasheed, Hiba S.; Sabah, Fayroz A.; Abdulateef, Sinan A.

    2016-07-01

    Highly oriented zinc oxide nanorod were successfully grown on seeded p-type silicone substrate by hydrothermal methode. The morphology and the crystallinty of ZnO c-axis (002) arrays were systematically studied using field emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD) methods. The effect of seed layer pre-annealing on nanorods properties was explained according to the nucleation site of ZnO nanoparticles on silicon substrate. In addition, the variation of the equal molarity of zinc nitrate hexahydrate and hexamine concentrations in the reaction vessel play a crucial role related to the ZnO nanorods.

  19. Synthesis of europium-doped zinc oxide micro- and nanowires

    NASA Astrophysics Data System (ADS)

    Al Rifai, S. A.; Ryabtsev, S. V.; Smirnov, M. S.; Domashevskaya, E. P.; Ivanov, O. N.

    2014-01-01

    Single crystalline Eu3+-doped wurtzite ZnO micro- and nanowires were synthesized by a chemical vapor deposition method (CVD). The nanostructures were grown by autocatalytic mechanism at walls of an alumina boat. The structure and properties of the doped ZnO is fully characterized by X-ray diffraction (XRD), energy-dispersive X-ray spectrometry (EDX), scanning and transmission electron microscopy (SEM and TEM), and photoluminescence (PL) methods. The synthesis was carried out for 10 min giving vertically aligned nanowires with mean diameter of 50-400 nm and with length of up to several microns. The nanowires were grown along ±[0001] direction. The concentration of Eu3+ dopant in the synthesized nanowires was varied from 0.7 to 0.9 at %. The crystal structure and microstructures of the doped nanomaterials were discussed and compared with undoped ZnO. The photoluminescence spectra show that emission of doped samples were shifted towards orange-red region (2.02 eV) relative to undoped zinc oxide nanostructures (2.37 eV) due to Eu3+ intraionic transitions from ZnO/Eu.

  20. Hydrothermal treatment for the marked structural and optical quality improvement of ZnO nanowire arrays deposited on lightweight flexible substrates

    NASA Astrophysics Data System (ADS)

    Lupan, Oleg; Pauporté, Thierry

    2010-08-01

    ZnO nanowire arrays (NWs) have attracted great interest as the building blocks for emerging applications in new flexible and elastic electronic and optoelectronic devices (e.g. smart cards, light emitting diodes (LEDs), displays, etc.) with higher functionality. Since flexible plastic substrates (FPS) are important, soft post-growth treatments compatible with FPS must be found to significantly improve the properties of NWs deposited on it. We present an innovative low-temperature hydrothermal treatment in an autoclave to improve the structural and optical properties of ZnO NWs grown by electrochemical deposition at low temperature (80 °C) on transparent flexible polymer -based indium-tin-oxide (ITO) coated substrates. The layer characterizations by scanning electron microscopy (SEM) and X-ray diffraction (XRD) showed the improvement of the wire surface smoothness and of their structural quality. The observed higher excitonic photoluminescence at 381 nm and the stronger optical phonon modes in the Raman spectra demonstrated the superior performance of the post-growth hydrothermal treatment compared to a conventional annealing at the same temperature. The presented results pave the way for the realization of new highly efficient ZnO-based optoelectronic devices on flexible plastic substrates or elastic foils.