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Sample records for all-optical switching device

  1. All-optical switching of magnetoresistive devices using telecom-band femtosecond laser

    SciTech Connect

    He, Li; Chen, Jun-Yang; Wang, Jian-Ping E-mail: moli@umn.edu; Li, Mo E-mail: moli@umn.edu

    2015-09-07

    Ultrafast all-optical switching of the magnetization of various magnetic systems is an intriguing phenomenon that can have tremendous impact on information storage and processing. Here, we demonstrate all-optical switching of GdFeCo alloy films using a telecom-band femtosecond fiber laser. We further fabricate Hall cross devices and electrically readout all-optical switching by measuring anomalous Hall voltage changes. The use of a telecom laser and the demonstrated all-optical switching of magnetoresistive devices represent the first step toward integration of opto-magnetic devices with mainstream photonic devices to enable novel optical and spintronic functionalities.

  2. Fast all-optical switch

    NASA Technical Reports Server (NTRS)

    Shay, Thomas M. (Inventor); Poliakov, Evgeni Y. (Inventor); Hazzard, David A. (Inventor)

    2001-01-01

    An apparatus and method wherein polarization rotation in alkali vapors or other mediums is used for all-optical switching and digital logic and where the rate of operation is proportional to the amplitude of the pump field. High rates of speed are accomplished by Rabi flopping of the atomic states using a continuously operating monochromatic atomic beam as the pump.

  3. All-optical switching with 1-ps response time in a DDMEBT enabled silicon grating coupler/resonator hybrid device.

    PubMed

    Covey, John; Finke, Aaron D; Xu, Xiaochuan; Wu, Wenzhi; Wang, Yaguo; Diederich, François; Chen, Ray T

    2014-10-01

    An amorphous film of the third-order nonlinear optical material DDMEBT was spun onto silicon chips for the first time, filling 80 nm lithographic features. A 710 μm² device was designed, fabricated, and tested that acts both as a nonlinear resonator switch and as an input/output grating coupler to a perfectly vertical single mode fiber. Autocorrelation and spectral measurements indicate the device has <1 ps response time, 4 nm of switching bandwidth, and 4 dB of on/off contrast. With sufficient power, this all-optical device can potentially modulate a single optical carrier frequency in excess of 1 THz. PMID:25322028

  4. Ultrafast all-optical switching in bacteriorhodopsin

    NASA Astrophysics Data System (ADS)

    Roy, Sukhdev; Singh, C. P.; Reddy, K. P. J.

    2001-04-01

    All-optical switching has been demonstrated in bacteriorhodopsin based on excited-state nonlinear absorption. A probe laser beam at 640 nm corresponding to the O-state absorption maximum is switched due to a strong pulsed pump laser beam at 570 nm, that corresponds to the maximum ground state absorption. We have studied the effect of variation in pulse width and in small signal absorption coefficient on the switching characteristics. The switching time decreases as the pulse width of the pump beam decreases and the small signal absorption coefficient increases. The switching contrast depends mainly on the peak pumping intensity.

  5. Design of all-optical, hot-electron current-direction-switching device based on geometrical asymmetry.

    PubMed

    Kumarasinghe, Chathurangi S; Premaratne, Malin; Gunapala, Sarath D; Agrawal, Govind P

    2016-01-01

    We propose a nano-scale current-direction-switching device(CDSD) that operates based on the novel phenomenon of geometrical asymmetry between two hot-electron generating plasmonic nanostructures. The proposed device is easy to fabricate and economical to develop compared to most other existing designs. It also has the ability to function without external wiring in nano or molecular circuitry since it is powered and controlled optically. We consider a such CDSD made of two dissimilar nanorods separated by a thin but finite potential barrier and theoretically derive the frequency-dependent electron/current flow rate. Our analysis takes in to account the quantum dynamics of electrons inside the nanorods under a periodic optical perturbation that are confined by nanorod boundaries, modelled as finite cylindrical potential wells. The influence of design parameters, such as geometric difference between the two nanorods, their volumes and the barrier width on quality parameters such as frequency-sensitivity of the current flow direction, magnitude of the current flow, positive to negative current ratio, and the energy conversion efficiency is discussed by considering a device made of Ag/TiO2/Ag. Theoretical insight and design guidelines presented here are useful for customizing our proposed CDSD for applications such as self-powered logic gates, power supplies, and sensors. PMID:26887286

  6. Design of all-optical, hot-electron current-direction-switching device based on geometrical asymmetry

    PubMed Central

    Kumarasinghe, Chathurangi S.; Premaratne, Malin; Gunapala, Sarath D.; Agrawal, Govind P.

    2016-01-01

    We propose a nano-scale current-direction-switching device(CDSD) that operates based on the novel phenomenon of geometrical asymmetry between two hot-electron generating plasmonic nanostructures. The proposed device is easy to fabricate and economical to develop compared to most other existing designs. It also has the ability to function without external wiring in nano or molecular circuitry since it is powered and controlled optically. We consider a such CDSD made of two dissimilar nanorods separated by a thin but finite potential barrier and theoretically derive the frequency-dependent electron/current flow rate. Our analysis takes in to account the quantum dynamics of electrons inside the nanorods under a periodic optical perturbation that are confined by nanorod boundaries, modelled as finite cylindrical potential wells. The influence of design parameters, such as geometric difference between the two nanorods, their volumes and the barrier width on quality parameters such as frequency-sensitivity of the current flow direction, magnitude of the current flow, positive to negative current ratio, and the energy conversion efficiency is discussed by considering a device made of Ag/TiO2/Ag. Theoretical insight and design guidelines presented here are useful for customizing our proposed CDSD for applications such as self-powered logic gates, power supplies, and sensors. PMID:26887286

  7. Design of all-optical, hot-electron current-direction-switching device based on geometrical asymmetry

    NASA Astrophysics Data System (ADS)

    Kumarasinghe, Chathurangi S.; Premaratne, Malin; Gunapala, Sarath D.; Agrawal, Govind P.

    2016-02-01

    We propose a nano-scale current-direction-switching device(CDSD) that operates based on the novel phenomenon of geometrical asymmetry between two hot-electron generating plasmonic nanostructures. The proposed device is easy to fabricate and economical to develop compared to most other existing designs. It also has the ability to function without external wiring in nano or molecular circuitry since it is powered and controlled optically. We consider a such CDSD made of two dissimilar nanorods separated by a thin but finite potential barrier and theoretically derive the frequency-dependent electron/current flow rate. Our analysis takes in to account the quantum dynamics of electrons inside the nanorods under a periodic optical perturbation that are confined by nanorod boundaries, modelled as finite cylindrical potential wells. The influence of design parameters, such as geometric difference between the two nanorods, their volumes and the barrier width on quality parameters such as frequency-sensitivity of the current flow direction, magnitude of the current flow, positive to negative current ratio, and the energy conversion efficiency is discussed by considering a device made of Ag/TiO2/Ag. Theoretical insight and design guidelines presented here are useful for customizing our proposed CDSD for applications such as self-powered logic gates, power supplies, and sensors.

  8. Nanofiber-based all-optical switches

    NASA Astrophysics Data System (ADS)

    Le Kien, Fam; Rauschenbeutel, A.

    2016-01-01

    We study all-optical switches operating on a single four-level atom with the N -type transition configuration in a two-mode nanofiber cavity with a significant length (on the order of 20 mm) and a moderate finesse (on the order of 300) under the electromagnetically induced transparency (EIT) conditions. In our model, the gate and probe fields are the quantum nanofiber-cavity fields excited by weak classical light pulses, and the parameters of the D2 line of atomic cesium are used. We examine two different switching schemes. The first scheme is based on the effect of the presence of a photon in the gate mode on the EIT of the probe mode. The second scheme is based on the use of EIT to store a photon of the gate mode in the population of an appropriate atomic level, which leads to the reduction of the transmission of the field in the probe mode. We investigate the dependencies of the switching contrast on various parameters, such as the cavity length, the mirror reflectivity, and the detunings and powers of the cavity driving field pulses. For a nanofiber cavity with fiber radius of 250 nm, cavity length of 20 mm, and cavity finesse of 313 and a cesium atom at a distance of 200 nm from the fiber surface, we numerically obtain a switching contrast on the order of about 67% for the first scheme and of about 95% for the second scheme. These switching operations require small mean numbers of photons in the nanofiber cavity gate and probe modes.

  9. Fault tolerant all-optical router with photorefractive all-optical switch

    NASA Astrophysics Data System (ADS)

    Kaino, Toshiya; Okamoto, Atsushi; Honma, Satoshi

    2003-08-01

    We propose a new type of the fault tolerant all-optical router (FTAR) by using an all-optical switch with photorefractive two-wave mixing. FTAR can detect a cutoff of a main transmitting line and automatically reroute a signal beam from the main line to a backup line. These functions can increase communication reliability of optical wireless. FTAR is composed of ony all-optical devices without any electronic devices or any mechanical operations. In the new type of FTAR, the routing of the signal beam is controlled by a control beam transmitting on the main line from a different light source at a receiver in the opposite direction with the signal beam. Compared with the previous type of FTAR composed of two photorefractinve crystals, the new configuration offers the simplification of the construction and high transmission efficiency of the signal beam. In this report, we experiment on the FTAR by usign a BaTiO3 and Ar+ laser whose wavelength is 514.5nm, and confirm the fundamental fucntin of FTAR. We give comparison of the result with the numerical analysis. We also analyze the dependence of the switching time on the input beam intensity of the crystal by a numerical analysis and an experiment.

  10. All-optical nonlinear plasmonic ring resonator switches

    NASA Astrophysics Data System (ADS)

    Nozhat, N.; Granpayeh, N.

    2014-11-01

    In this paper, all-optical nonlinear plasmonic ring resonator (PRR) switches containing 90o sharp and smooth bends have been proposed and numerically analyzed by the finite-difference time-domain method. Kerr nonlinear self-phase modulation (SPM) and cross-phase modulation (XPM) effects on the switching performance of the device have been studied. By applying a high-power lightwave, the signal can switch from one port to the other port due to the ON/OFF resonant states of the ring. We have shown that by utilizing the XPM effect, the output power ratio is improved by a factor of 2.5 and the required switching power is 31% of that of the case with only the SPM effect. Moreover, by utilizing sharp bend square-shaped ring resonators, the switching power is 10.4% lower than that of the smooth ones. The nonlinear PRR switches are suitable for application in photonic-integrated circuits as all-optical switches because of their nanoscale size and low required switching power.

  11. All-optical switching and all-optical logic gates based on bacteriorhodopsin

    NASA Astrophysics Data System (ADS)

    Huang, Yuhua; Wu, Shin-Tson; Zhao, Youyuan

    2004-06-01

    We demonstrate an all-optical switching using a bacteriorhodopsin (bR) film. The transmission of the bR film is investigated using the pump-probe method. A diode-pumped second harmonic YAG laser (λ = 532nm which is around the maximum initial B state absorption) was used as a pumping beam and a cw He-Ne laser (λ = 632 nm which is around the peaks of K and O states) was used as a probe. Due to the nonlinear intensity induced excited state absorption of the K, L, M, N, and O states in the bR photocycle, the switching characteristics are sensitive to the intensity of the probe and pump beams. Based on this property, we design an all-optical operating device functioning as 11 kinds of variable binary all-optical logic gates. The incident 532nm beam acts as an input to the logic gate and the transmission of the 632nm bears the output of the gate.

  12. All-optical active switching in individual semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Piccione, Brian; Cho, Chang-Hee; van Vugt, Lambert K.; Agarwal, Ritesh

    2012-10-01

    The imminent limitations of electronic integrated circuits are stimulating intense activity in the area of nanophotonics for the development of on-chip optical components, and solutions incorporating direct-bandgap semiconductors are important in achieving this end. Optical processing of data at the nanometre scale is promising for circumventing these limitations, but requires the development of a toolbox of components including emitters, detectors, modulators, waveguides and switches. In comparison to components fabricated using top-down methods, semiconductor nanowires offer superior surface properties and stronger optical confinement. They are therefore ideal candidates for nanoscale optical network components, as well as model systems for understanding optical confinement. Here, we demonstrate all-optical switching in individual CdS nanowire cavities with subwavelength dimensions through stimulated polariton scattering, as well as a functional NAND gate built from multiple switches. The device design exploits the strong light-matter coupling present in these nanowires, leading to footprints that are a fraction of those of comparable silicon-based dielectric contrast and photonic crystal devices.

  13. All-optical switching in optically induced nonlinear waveguide couplers

    SciTech Connect

    Diebel, Falko Boguslawski, Martin; Rose, Patrick; Denz, Cornelia; Leykam, Daniel; Desyatnikov, Anton S.

    2014-06-30

    We experimentally demonstrate all-optical vortex switching in nonlinear coupled waveguide arrays optically induced in photorefractive media. Our technique is based on multiplexing of nondiffracting Bessel beams to induce various types of waveguide configurations. Using double- and quadruple-well potentials, we demonstrate precise control over the coupling strength between waveguides, the linear and nonlinear dynamics and symmetry-breaking bifurcations of guided light, and a power-controlled optical vortex switch.

  14. An approach toward the holy grail in all-optical circuit switching: the monster all-optical crossconnect

    NASA Astrophysics Data System (ADS)

    Riza, Nabeel A.; Mughal, M. J.

    2003-12-01

    A new robust approach is presented for achieving very large fiber port count all-optical crossconnect switches. This three dimensional optics-based switch has built-in alignment capabilities with fault-tolerance, allowing graceful port count scaling.

  15. All-Optical Switching in Bacteriorhodopsin Based on Excited-State Absorption

    NASA Astrophysics Data System (ADS)

    Roy, Sukhdev

    2008-03-01

    Switching light with light is of tremendous importance for both fundamental and applied science. The advent of nano-bio-photonics has led to the design, synthesis and characterization of novel biomolecules that exhibit an efficient nonlinear optical response, which can be utilized for designing all-optical biomolecular switches. Bacteriorhodopsin (bR) protein found in the purple membrane of Halobacterium halobium has been the focus of intense research due to its unique properties that can also be tailored by physical, chemical and genetic engineering techniques to suit desired applications. The talk would focus on our recent results on all-optical switching in bR and its mutants, based on excited-state absorption, using the pump-probe technique. We would discuss the all-optical control of various features of the switching characteristics such as switching contrast, switching time, switching pump intensity, switched probe profile and phase, and relative phase-shift. Optimized conditions for all-optical switching that include optimized values of the small-signal absorption coefficient (for cw case), the pump pulse width and concentration for maximum switching contrast (for pulsed case), would be presented. We would discuss the desired optimal spectral and kinetic properties for device applications. We would also discuss the application of all-optical switching to design low power all-optical computing devices, such as, spatial light modulators, logic gates and multiplexers and compare their performance with other natural photoreceptors such as pharaonis phoborhodopsin, proteorhodopsin, photoactive yellow protein and the blue light plant photoreceptor phototropin.

  16. High-contrast, all-optical switching in bacteriorhodopsin films

    NASA Astrophysics Data System (ADS)

    Banyal, Ravinder Kumar; Raghavendra Prasad, B.

    2005-09-01

    We report experiments with nonlinear-absorption-based, high-contrast, all-optical switching in photochromic bacteriorhodopsin (BR) films. The switching action is accomplished by control of the transmission of a weak probe beam through a BR sample with the help of strong pump beam illumination at 532 nm wavelength. We found that the switching properties of BR films depend on several experimentally controllable parameters such as probe wavelength, pump beam intensity, and excitation rate. A comparative study of the switching behavior and other parameters of practical use was carried out at three probe wavelengths (543, 594, and 633 nm) and various beam powers and pump excitation rates. The results are presented for commercially available wild-type and D96N variant BR films.

  17. High-contrast, all-optical switching in bacteriorhodopsin films.

    PubMed

    Banyal, Ravinder Kumar; Prasad, B Raghavendra

    2005-09-10

    We report experiments with nonlinear-absorption-based, high-contrast, all-optical switching in photochromic bacteriorhodopsin (BR) films. The switching action is accomplished by control of the transmission of a weak probe beam through a BR sample with the help of strong pump beam illumination at 532 nm wavelength. We found that the switching properties of BR films depend on several experimentally controllable parameters such as probe wavelength, pump beam intensity, and excitation rate. A comparative study of the switching behavior and other parameters of practical use was carried out at three probe wavelengths (543, 594, and 633 nm) and various beam powers and pump excitation rates. The results are presented for commercially available wild-type and D96N variant BR films. PMID:16161665

  18. All-Optical Helicity Dependent Spin Switching in a Many-Spin System

    NASA Astrophysics Data System (ADS)

    Latta, Tanner; Zhang, G. P.

    All-optical helicity dependent magnetic switching (AOS) is achieved through using an ultrafast laser pulse to manipulate and switch the spin of an electron from one direction to another. This process happens in a short amount of femtoseconds after the laser pulse is introduced. All-optical helicity dependent magnetic switching (AOS) does not fall to the assistance of any external magnetic field. Linearly polarized light, as well as right and left circularly polarized light are used to manipulate the spin of the electrons. Ferrimagnetic, rather than ferromagnetic, materials are more suitable to create conditions in which AOS are viable due to the orientation of the spins within this material. In the following study we show and conclude that AOS is possible with the use of left and right circularly polarized laser pulses. All-optical helicity dependent magnetic switching has many applications in magnetic recording technology or magnetic memory devices. DE-FG02-06ER46304.

  19. Bandwidth analysis of all-optical turbo-switch

    NASA Astrophysics Data System (ADS)

    Zhou, Peng; Yang, Xuelin; Hu, Xiaonan; Hu, Weisheng

    2015-01-01

    We propose and develop a frequency-domain model to analyze the bandwidth of all-optical turbo-switch. The model has taken the spatial inhomogeneity of semiconductor optical amplifier (SOA) into consideration for the first time. The simulations based on the model show that the 3-dB bandwidth of turbo-switch could reach up to ~270 GHz when the second SOA is oversaturated. However, the overshoot will be higher, which may result in the distortion of the output signal. There is a trade-off between the bandwidth and the flatness of frequency response characteristics for turbo-switch operation. In addition, the optimum position of the delay-interferometer (DI) is investigated, showing that the level of the overshoot is relatively lower if the DI is placed between the two SOAs.

  20. Microscopic model for all optical switching in ferromagnets

    NASA Astrophysics Data System (ADS)

    Cornelissen, T. D.; Córdoba, R.; Koopmans, B.

    2016-04-01

    The microscopic mechanism behind the all optical switching (AOS) in ferromagnets has triggered intense scientific debate. Here, the microscopic three-temperature model is utilized to describe AOS in a perpendicularly magnetized ferromagnetic Co/Pt system. We demonstrate that AOS in such a ferromagnet can be explained with the Inverse Faraday Effect (IFE). The influence of the strength and lifetime of the IFE induced field pulse on the switching process are investigated. We found that because of strong spin-orbit coupling, the minimal lifetime of the IFE needed to obtain switching is of the order of 0.1 ps, which is shorter than previously assumed. Moreover, spatial images of the domain pattern after AOS in Co/Pt, as well as their dependence on applying an opposite magnetic field, are qualitatively reproduced.

  1. All-optical switching in semiconductor-doped nonlinear fibers

    NASA Astrophysics Data System (ADS)

    Donkor, Eric

    1999-11-01

    Optical switching devices that can perform at picosecond to femtosecond speeds are on demand because of interest to develop multi-gigabit, multi-user, optical networks. Two fundamental design issues are the choice of nonlinear material as the active medium for the switch and the switching architecture. Wave guide based switches designed with silica fiber have demonstrated ultra-fast switching up to femtosecond speeds. Figure 1 shows the switching speed versus power-length product for different types of materials. At the two extremes are rare-earth doped, and silica. Rare-earth doped materials have the smallest power-length product of about 10 W-cm, but also have the least switching speed. At the other extreme, silica has the fastest switching speed of 1013 Hz but also has the largest power-length product of 6 kW-cm. Semiconductor-doped glasses (SDG) and metal-doped glasses appear to have a good compromise between switching speed and power-length product. There is therefore interest to research such optical materials, and novel switching architectures that can simultaneously down-scale device geometry, and power requirements for switching.

  2. All-optical switching of diffraction gratings infiltrated with dye-doped liquid crystals

    NASA Astrophysics Data System (ADS)

    Lucchetta, D. E.; Vita, F.; Simoni, F.

    2010-12-01

    We report the realization and the characterization of an all-optical switching device based on a transmission grating recorded in a polymeric substrate infiltrated with a methyl red-doped liquid crystal. The properties of this highly nonlinear mixture are exploited to modulate the diffraction of the grating by a pump beam when a static electric field is applied. The behavior of the device is in agreement with the existing model for methyl red-doped liquid crystals.

  3. Passive all-optical polarization switch, binary logic gates, and digital processor.

    PubMed

    Zaghloul, Y A; Zaghloul, A R M; Adibi, A

    2011-10-10

    We introduce the passive all-optical polarization switch, which modulates light with light. That switch is used to construct all the binary logic gates of two or more inputs. We discuss the design concepts and the operation of the AND, OR, NAND, and NOR gates as examples. The rest of the 16 logic gates are similarly designed. Cascading of such gates is straightforward as we show and discuss. Cascading in itself does not require a power source, but feedback at this stage of development does. The design and operation of an SR Latch is presented as one of the popular basic sequential devices used for memory cells. That completes the essential components of an all-optical polarization digital processor. The speed of such devices is well above 10 GHz for bulk implementations and is much higher for chip-size implementations. In addition, the presented devices do have the four essential characteristics previously thought unique to the microelectronic ones. PMID:21997044

  4. Interaction-free all-optical switching via the quantum Zeno effect

    NASA Astrophysics Data System (ADS)

    Huang, Yu-Ping; Altepeter, Joseph B.; Kumar, Prem

    2010-12-01

    We propose an interaction-free scheme for all-optical switching which does not rely on the physical coupling between signal and control waves. The interaction-free nature of the scheme allows it to overcome the fundamental photon-loss limit imposed by the signal-pump coupling. The same phenomenon protects photonic-signal states from decoherence, making devices based on this scheme suitable for quantum applications. Focusing on χ(2) waveguides, we provide device designs for traveling-wave and Fabry-Perot switches. In both designs, the performance is optimal when the signal switching is induced by coherent dynamical evolution. In contrast, when the switching is induced by a rapid dissipation channel, it is less efficient.

  5. All-optical switches, unidirectional flow, and logic gates with discrete solitons in waveguide arrays.

    PubMed

    Al Khawaja, U; Al-Marzoug, S M; Bahlouli, H

    2016-05-16

    We propose a mechanism by which a number of useful all-optical operations, such as switches, diodes, and logic gates, can be performed with a single device. An effective potential well is obtained by modulating the coupling between the waveguides through their separations. Depending on the power of a control soliton injected through the potential well, an incoming soliton will either completely transmit or reflect forming a controllable switch. We show that two such switches can work as AND, OR, NAND, and NOR logic gates. Furthermore, the same device may also function as a perfect soliton diode with adjustable polarity. We discuss the feasibility of realising such devices with current experimental setups. PMID:27409929

  6. All-optical switching characteristics in bacteriorhodopsin and its applications in integrated optics.

    PubMed

    Huang, Yuhua; Wu, Shin-Tson; Zhao, Youyuan

    2004-03-01

    We experimentally and theoretically investigated the optical switching characteristics of bacteriorhodopsin (bR) at lambda=633 nm using the pump-probe method. A diode-pumped second harmonic YAG laser (lambda=532 nm which is located around the maximum initial Br state absorption) was used as a pumping beam and a cw He-Ne laser (lambda=633 nm which is around the peaks of K and O states) was used as a probe. Due to the nonlinear intensity induced excited state absorption of the K, L, M, N, and O states in the bR photocycle, the switching characteristics are sensitive to the intensity of the probe and pump beams. Based on this property, we have demonstrated an all-optical device functioning as 11 kinds of variable binary all-optical logic gates. PMID:19474900

  7. All-optical switching characteristics in bacteriorhodopsin and its applications in integrated optics

    NASA Astrophysics Data System (ADS)

    Huang, Yuhua; Wu, Shin-Tson; Zhao, Youyuan

    2004-03-01

    We experimentally and theoretically investigated the optical switching characteristics of bacteriorhodopsin (bR) at l=633 nm using the pump-probe method. A diode-pumped second harmonic YAG laser (l=532 nm which is located around the maximum initial Br state absorption) was used as a pumping beam and a cw He-Ne laser (l=633 nm which is around the peaks of K and O states) was used as a probe. Due to the nonlinear intensity induced excited state absorption of the K, L, M, N, and O states in the bR photocycle, the switching characteristics are sensitive to the intensity of the probe and pump beams. Based on this property, we have demonstrated an all-optical device functioning as 11 kinds of variable binary all-optical logic gates.

  8. Ultrafast, broadband, and configurable midinfrared all-optical switching in nonlinear graphene plasmonic waveguides

    NASA Astrophysics Data System (ADS)

    Ooi, Kelvin J. A.; Cheng, J. L.; Sipe, J. E.; Ang, L. K.; Tan, Dawn T. H.

    2016-07-01

    Graphene plasmonics provides a unique and excellent platform for nonlinear all-optical switching, owing to its high nonlinear conductivity and tight optical confinement. In this paper, we show that impressive switching performance on graphene plasmonic waveguides could be obtained for both phase and extinction modulations at sub-MW/cm2 optical pump intensities. Additionally, we find that the large surface-induced nonlinearity enhancement that comes from the tight confinement effect can potentially drive the propagating plasmon pump power down to the pW range. The graphene plasmonic waveguides have highly configurable Fermi-levels through electrostatic-gating, allowing for versatility in device design and a broadband optical response. The high capabilities of nonlinear graphene plasmonics would eventually pave the way for the adoption of the graphene plasmonics platform in future all-optical nanocircuitry.

  9. Software Defined Networking (SDN) controlled all optical switching networks with multi-dimensional switching architecture

    NASA Astrophysics Data System (ADS)

    Zhao, Yongli; Ji, Yuefeng; Zhang, Jie; Li, Hui; Xiong, Qianjin; Qiu, Shaofeng

    2014-08-01

    Ultrahigh throughout capacity requirement is challenging the current optical switching nodes with the fast development of data center networks. Pbit/s level all optical switching networks need to be deployed soon, which will cause the high complexity of node architecture. How to control the future network and node equipment together will become a new problem. An enhanced Software Defined Networking (eSDN) control architecture is proposed in the paper, which consists of Provider NOX (P-NOX) and Node NOX (N-NOX). With the cooperation of P-NOX and N-NOX, the flexible control of the entire network can be achieved. All optical switching network testbed has been experimentally demonstrated with efficient control of enhanced Software Defined Networking (eSDN). Pbit/s level all optical switching nodes in the testbed are implemented based on multi-dimensional switching architecture, i.e. multi-level and multi-planar. Due to the space and cost limitation, each optical switching node is only equipped with four input line boxes and four output line boxes respectively. Experimental results are given to verify the performance of our proposed control and switching architecture.

  10. Electrical characterization of all-optical helicity-dependent switching in ferromagnetic Hall crosses

    NASA Astrophysics Data System (ADS)

    El Hadri, M. S.; Pirro, P.; Lambert, C.-H.; Bergeard, N.; Petit-Watelot, S.; Hehn, M.; Malinowski, G.; Montaigne, F.; Quessab, Y.; Medapalli, R.; Fullerton, E. E.; Mangin, S.

    2016-02-01

    We present an experimental study of all-optical helicity-dependent switching (AO-HDS) of ferromagnetic Pt/Co/Pt heterostructures with perpendicular magnetic anisotropy. The sample is patterned into a Hall cross and the AO-HDS is measured via the anomalous Hall effect. This all-electrical probing of the magnetization during AO-HDS enables a statistical quantification of the switching ratio for different laser parameters, such as the threshold power to achieve AO-HDS and the exposure time needed to reach complete switching at a given laser power. We find that the AO-HDS is a cumulative process, a certain number of optical pulses is needed to obtain a full and reproducible helicity-dependent switching. The deterministic switching of the ferromagnetic Pt/Co/Pt Hall cross provides a full "opto-spintronic device," where the remanent magnetization can be all-optically and reproducibly written and erased without the need of an external magnetic field.

  11. All-optical 2-bit header recognition and packet switching using polarization bistable VCSELs.

    PubMed

    Hayashi, Daisuke; Nakao, Kazuya; Katayama, Takeo; Kawaguchi, Hitoshi

    2015-04-01

    We propose and evaluate an all-optical 2-bit header recognition and packet switching method using two 1.55-µm polarization bistable vertical-cavity surface-emitting lasers (VCSELs) and three optical switches. Polarization bistable VCSELs acted as flip-flop devices by using AND-gate operations of the header and set pulses, together with the reset pulses. Optical packets including 40-Gb/s non-return-to-zero pseudo-random bit-sequence payloads were successfully sent to one of four ports according to the state of two bits in the headers with a 4-bit 500-Mb/s return-to-zero format. The input pulse powers were 17.2 to 31.8 dB lower than the VCSEL output power. We also examined an extension of this method to multi-bit header recognition and packet switching. PMID:25968674

  12. All-optical switching in silicon-on-insulator photonic wire nano-cavities.

    PubMed

    Belotti, Michele; Galli, Matteo; Gerace, Dario; Andreani, Lucio Claudio; Guizzetti, Giorgio; Md Zain, Ahmad R; Johnson, Nigel P; Sorel, Marc; De La Rue, Richard M

    2010-01-18

    We report on experimental demonstration of all-optical switching in a silicon-on-insulator photonic wire nanocavity operating at telecom wavelengths. The switching is performed with a control pulse energy as low as approximately 0.1 pJ on a cavity device that presents very high signal transmission, an ultra-high quality-factor, almost diffraction-limited modal volume and a footprint of only 5 microm(2). High-speed modulation of the cavity mode is achieved by means of optical injection of free carriers using a nanosecond pulsed laser. Experimental results are interpreted by means of finite-difference time-domain simulations. The possibility of using this device as a logic gate is also demonstrated. PMID:20173973

  13. An All-Optical Picosecond Switch in Polydiacetylene

    NASA Technical Reports Server (NTRS)

    Abdeldayem, Hossin; Frazier, Donald O.; Paley, Mark S.

    2002-01-01

    Polydiacetylene derivative of 2-methyl-4-nitroaniline (PDAMNA) showed a picosecond switching property. This phenomenon was demonstrated by wave guiding a cw He-Ne laser collinearly with a mode-locked picosecond Nd:YAG laser at 532 nm through a hollow fiber coated on the inside with a thin film of PDAMNA. The z-scan investigations of PDAMNA thin film revealed that the PDAMNA system is a three level system and the switching is caused by excited state absorption of the He-Ne beam.

  14. On the size-dependent magnetism and all-optical magnetization switching of transition-metal silicide nanostructures

    SciTech Connect

    Glushkov, G. I.; Tuchin, A. V.; Popov, S. V.; Bityutskaya, L. A.

    2015-12-15

    Theoretical investigations of the electronic structure, synthesis, and all-optical magnetization switching of transition-metal silicide nanostructures are reported. The magnetic moment of the nanostructures is studied as a function of the silicide cluster size and configuration. The experimentally demonstrated magnetization switching of nanostructured nickel silicide by circularly polarized light makes it possible to create high-speed storage devices with high density data recording.

  15. Integration of photonic nanojets and semiconductor nanoparticles for enhanced all-optical switching

    PubMed Central

    Born, Brandon; Krupa, Jeffrey D. A.; Geoffroy-Gagnon, Simon; Holzman, Jonathan F.

    2015-01-01

    All-optical switching is the foundation of emerging all-optical (terabit-per-second) networks and processors. All-optical switching has attracted considerable attention, but it must ultimately support operation with femtojoule switching energies and femtosecond switching times to be effective. Here we introduce an all-optical switch architecture in the form of a dielectric sphere that focuses a high-intensity photonic nanojet into a peripheral coating of semiconductor nanoparticles. Milli-scale spheres coated with Si and SiC nanoparticles yield switching energies of 200 and 100 fJ with switching times of 10 ps and 350 fs, respectively. Micro-scale spheres coated with Si and SiC nanoparticles yield switching energies of 1 pJ and 20 fJ with switching times of 2 ps and 270 fs, respectively. We show that femtojoule switching energies are enabled by localized photoinjection from the photonic nanojets and that femtosecond switching times are enabled by localized recombination within the semiconductor nanoparticles. PMID:26314911

  16. Two types of all-optical magnetization switching mechanisms using femtosecond laser pulses

    NASA Astrophysics Data System (ADS)

    El Hadri, M. S.; Pirro, P.; Lambert, C.-H.; Petit-Watelot, S.; Quessab, Y.; Hehn, M.; Montaigne, F.; Malinowski, G.; Mangin, S.

    2016-08-01

    Using a time-dependent electrical investigation of the all-optical switching in ferrimagnetic and ferromagnetic Hall crosses via the anomalous Hall effect, intriguing insights into the rich physics underlying the all-optical switching are provided. We demonstrate that two different all-optical magnetization switching mechanisms can be distinguished; a "single pulse" switching for ferrimagnetic GdFeCo alloys, and a "two regimes" switching process for both ferrimagnetic TbCo alloys and ferromagnetic Pt/Co multilayers. We show that the latter takes place at two different time scales, and consists of a steplike helicity-independent multiple-domain formation within the first 1 ms followed by a helicity-dependent remagnetization on several tens of milliseconds.

  17. Numerical investigation of an all-optical switch in a graded nonlinear plasmonic grating.

    PubMed

    Wang, Guoxi; Lu, Hua; Liu, Xueming; Gong, Yongkang

    2012-11-01

    We have proposed and numerically investigated an all-optical switch based on a metal-insulator-metal waveguide with graded nonlinear plasmonic gratings. The influences of grating depth and refractive index of a Kerr nonlinear medium on the transmission of the switch are exactly analyzed by utilizing transmission line theory. The finite-difference time-domain simulation results show that the highly compact structure possesses excellent switch function by tuning the incident electric field intensity. In addition, the simulation results show that this all-optical switch has an ultrawide operating frequency regime and femtosecond-scale response time (~130 fs). Such a switch can find potential applications for all-optical signal processing and optical communication. PMID:23080383

  18. Study on all-optical switching characteristics of ethyl orange-doped polymer film

    NASA Astrophysics Data System (ADS)

    Xu, Tang; Zhang, Chunping; Lin, Yu; Qi, Shengwen

    2008-10-01

    The all-optical switching polymer thin films with azobenzene dye ethyl orange as the guest material and polyvinyl alcohol (PVA) as the host material were prepared by adulteration and spin-coating methods. The all-optical switching characteristics of the samples were measured at different intensities and modulation frequencies of the pump beam (532 nm, CW); the influence of doping concentration on the all-optical switching effect of the films was studied. It is shown that, under room temperature conditions and with a low pump power of 6 mW, the all-optical switch has a response time of about 2 ms and a modulation depth of 45%, and the maximal modulation depth reaches 90%. In addition, it is found that samples with higher doping concentration show a stronger all-optical switching effect but a larger background signal, and good switching performance is obtained by choosing the doping concentrations from 0.8% to 2% of the sample.

  19. On the fly all-optical packet switching based on hybrid WDM/OCDMA labeling scheme

    NASA Astrophysics Data System (ADS)

    Brahmi, Houssem; Giannoulis, Giannis; Menif, Mourad; Katopodis, Vasilis; Kalavrouziotis, Dimitrios; Kouloumentas, Christos; Groumas, Panos; Kanakis, Giannis; Stamatiadis, Christos; Avramopoulos, Hercules; Erasme, Didier

    2014-02-01

    We introduce a novel design of an all-optical packet routing node that allows for the selection and forwarding of optical packets based on the routing information contained in hybrid wavelength division multiplexing/optical code division multiple access (WDM/OCDMA) labels. A stripping paradigm of optical code-label is adopted. The router is built around an optical-code gate that consists in an optical flip-flop controlled by two fiber Bragg grating correlators and is combined with a Mach-Zehnder interferometer (MZI)-based forwarding gate. We experimentally verify the proof-of-principle operation of the proposed self-routing node under NRZ and OCDMA packet traffic conditions. The successful switching of elastic NRZ payload at 40 Gb/s controlled by DS-OCDMA coded labels and the forwarding operation of encoded data using EQC codes are presented. Proper auto-correlation functions are obtained with higher than 8.1 dB contrast ratio, suitable to efficiently trigger the latching device with a contrast ratio of 11.6 dB and switching times below 3.8 ns. Error-free operation is achieved with 1.5 dB penalty for 40 Gb/s NRZ data and with 2.1 dB penalty for DS-OCDMA packets. The scheme can further be applied to large-scale optical packet switching networks by exploiting efficient optical coders allocated at different WDM channels.

  20. Ultrafast defect dynamics: A new approach to all optical broadband switching employing amorphous selenium thin films

    NASA Astrophysics Data System (ADS)

    Sharma, Rituraj; Prasai, Kiran; Drabold, D. A.; Adarsh, K. V.

    2015-07-01

    Optical switches offer higher switching speeds than electronics, however, in most cases utilizing the interband transitions of the active medium for switching. As a result, the signal suffers heavy losses. In this article, we demonstrate a simple and yet efficient ultrafast broadband all-optical switching on ps timescale in the sub-bandgap region of the a-Se thin film, where the intrinsic absorption is very weak. The optical switching is attributed to short-lived transient defects that form localized states in the bandgap and possess a large electron-phonon coupling. We model these processes through first principles simulation that are in agreement with the experiments.

  1. Ultrafast defect dynamics: A new approach to all optical broadband switching employing amorphous selenium thin films

    SciTech Connect

    Sharma, Rituraj; Adarsh, K. V. E-mail: adarsh@iiserb.ac.in; Prasai, Kiran; Drabold, D. A. E-mail: adarsh@iiserb.ac.in

    2015-07-15

    Optical switches offer higher switching speeds than electronics, however, in most cases utilizing the interband transitions of the active medium for switching. As a result, the signal suffers heavy losses. In this article, we demonstrate a simple and yet efficient ultrafast broadband all-optical switching on ps timescale in the sub-bandgap region of the a-Se thin film, where the intrinsic absorption is very weak. The optical switching is attributed to short-lived transient defects that form localized states in the bandgap and possess a large electron-phonon coupling. We model these processes through first principles simulation that are in agreement with the experiments.

  2. Enhancement of photoinduced anisotropy and all-optical switching in Bacteriorhodopsin films

    NASA Astrophysics Data System (ADS)

    Wu, Pengfei; Rao, D. V. G. L. N.; Kimball, B. R.; Nakashima, M.; DeCristofano, B. S.

    2002-11-01

    Large enhancement of photoanisotropic effects is demonstrated in thin films of the biomaterial Bacteriorhodopsin by using two exciting beams of orthogonal polarization. The mechanism of the enhancement originates from optimization of direction-selected photoisomerization of the biomaterial controlled by the polarized exciting beams. The technique is applied for achieving an all-optical switch with the additional feature of output sign control.

  3. Carrier transport in an InGaAs(P)/InP all-optical switching structure

    SciTech Connect

    Knorr, C.; Wilhelm, U.; Ottenwaelder, D.; Scholz, F.; Hangleiter, A.

    1996-12-31

    All-optical switches play a central role in optical computing and optical data processing. SEEDs (self electro-optic effect devices) are one class of devices, which work at low optical power, but need an external electrical feedback. The authors presented a specially designed SCMQW structure, where hole transport is controlled by an additional large heterobarrier. This barrier gives access to steady state escape times by measuring the charge carrier induced field change in the MWQ region. The authors get a minimum value for the hole extraction time over the barrier of several {micro}s at 77 K. At a temperature of 200 K the measured time constants lie below the values, which their rate equation model and the semi-classical model predict, and show a stronger field dependence. This could be accounted for thermally assisted tunneling and contribution of light hole transport, which both reduce the effective barrier height and show a stronger field dependence. Further investigations of the transport times are currently in progress by changing the thickness of the InP barrier and the barrier height of the quaternary material.

  4. Nonlinear all-optical switch based on a white-light cavity

    NASA Astrophysics Data System (ADS)

    Li, Na; Xu, Jingping; Song, Ge; Zhu, Chengjie; Xie, Shuangyuan; Yang, Yaping; Zubairy, M. Suhail; Zhu, Shi-Yao

    2016-04-01

    It is well known that there is a bottleneck for nonlinear all-optical switching, namely, the switching power and the switching time cannot be lowered simultaneously. A lower switching power requires a resonator with a high quality (Q ) factor, but leads to a longer switching time. We propose to overcome this bottleneck by replacing the nonlinear cavity in such an all-optical switch by a white-light cavity. This can be done by doping three-level atoms in the ring resonator and applying incoherent pump and coherent driving fields on it. The white-light cavity possesses broadband resonance in a linear region. Therefore, for the incident pulse, a broad range of frequency components can take part in the nonlinear process, and so it requires lower power to achieve switching compared to the conventional ring resonator. On the other hand, the refractive index of a white-light cavity has negative dispersion, leading to a fast group velocity. This results in a shorter time to build up the resonant response, yielding a short switching time.

  5. All-optical logic devices with cascaded nonlinear couplers.

    PubMed

    Wang, Y; Wang, Z H; Bialkowski, M E

    2000-08-10

    The switching behaviors of cascaded nonlinear couplers were investigated. They have nearly ideal digital-switching characteristics, and their output power levels can be adjusted by means of varying the nonlinear coupling coefficient of the final coupler. The two-input excitation nonlinear cascaded couplers can perform not only switching operations but also a series of logic operations. The logic operations depend mainly on the coupling length of the two-input coupler and its initial inputs. The power corresponding to the rising and falling ridge of the logic operating waveforms can be shifted effectively by means of varying the switching power of the reshaper. Allowable ranges of three important parameters--coupling length of the two-input coupler L(1), bias optical power P(bia), and phase difference psi between the signal and bias beams for six fundamental logic operations--were calculated. Curves for design considerations and suggestions for the best choice of parameters for stable and reliable logic operations and, or, xor, nand, nor, and nxor are also presented individually. PMID:18349996

  6. Ultrafast All-Optical Switching with Magnetic Resonances in Nonlinear Dielectric Nanostructures.

    PubMed

    Shcherbakov, Maxim R; Vabishchevich, Polina P; Shorokhov, Alexander S; Chong, Katie E; Choi, Duk-Yong; Staude, Isabelle; Miroshnichenko, Andrey E; Neshev, Dragomir N; Fedyanin, Andrey A; Kivshar, Yuri S

    2015-10-14

    We demonstrate experimentally ultrafast all-optical switching in subwavelength nonlinear dielectric nanostructures exhibiting localized magnetic Mie resonances. We employ amorphous silicon nanodisks to achieve strong self-modulation of femtosecond pulses with a depth of 60% at picojoule-per-disk pump energies. In the pump-probe measurements, we reveal that switching in the nanodisks can be governed by pulse-limited 65 fs-long two-photon absorption being enhanced by a factor of 80 with respect to the unstructured silicon film. We also show that undesirable free-carrier effects can be suppressed by a proper spectral positioning of the magnetic resonance, making such a structure the fastest all-optical switch operating at the nanoscale. PMID:26393983

  7. Model for multishot all-thermal all-optical switching in ferromagnets

    NASA Astrophysics Data System (ADS)

    Gorchon, J.; Yang, Y.; Bokor, J.

    2016-07-01

    All-optical magnetic switching (AOS) is a recently observed rich and puzzling phenomenon that offers promising technological applications. However, a fundamental understanding of the underlying mechanisms remains elusive. Here we present a model for multishot helicity-dependent AOS in ferromagnetic materials based on a purely heat-driven mechanism in the presence of magnetic circular dichroism (MCD). We predict that AOS should be possible with as little as 0.5% of MCD, after a minimum number of laser shots heat the sample close to the Curie temperature. Finally, we qualitatively reproduce the all-optically switched domain patterns observed experimentally by numerically simulating the result of multiple laser shots on an FePtC granular ferromagnetic film.

  8. Realization of all-optical switch and diode via Raman gain process using a Kerr field

    NASA Astrophysics Data System (ADS)

    Abbas, Muqaddar; Qamar, Sajid; Qamar, Shahid

    2016-08-01

    The idea of optical photonic crystal, which is generated using two counter-propagating fields, is revisited to study gain-assisted all-optical switch and diode using Kerr field. Two counter-propagating fields with relative detuning Δ ν generate standing-wave field pattern which interacts with a four-level atomic system. The standing-wave field pattern acts like a static photonic crystal for Δ ν =0 , however, it behaves as a moving photonic crystal for Δ ν \

  9. Novel all-optical planar and compact minimum-stage switches of size >= 4x4

    NASA Astrophysics Data System (ADS)

    Giglmayr, Josef

    1997-01-01

    Throughout the paper, novel all-optical planar 1-stage k multiplied by k-switches and compact minimum-stage k multiplied by k-switches in double-layer and multi-layer technique, are presented and analyzed. In the first case, the number of k(k - 1)/2 switches of size 2 multiplied by 2 (equivalent minimum of the Spanke-Benes network) are arranged in parallel instead of the number of k (equivalent maximum) cascaded 2 multiplied by 2-switches of the Spanke- Benes network. In the second case, the number of 2 multiplied by 2-switches depends on the geometry of the 'pipes' of the switches formed by the layers and waveguides [for a square it is 3k/2(k/2 - 1) for rearrangeable nonblocking and 3(k - 1)k/2(k/2 - 1) for circuit switching networks]. The number of stages (NS) (horizontal cascaded) of the proposed compact switches for the nonblocking interconnection is NS equals n - 1 if the waveguides form an n-gon (n greater than or equal to 3) for any size of the k multiplied by k-switch. In this way, the attenuation of optical signals passing through a photonic network may be minimized. In particular, for any size of a k multiplied by k-switch, dependent on the n-gon, the minimum NS is n-1 equals 2 (triangle) or n - 1 equals 3 (square) etc. Thus the proposed switch concept is of complexity O(1), i.e. the NS is independent of the number of inputs/outputs. Additionally, the proposed switches are capable to operate in the circuit switching mode if and only if (iff) the parallelism increases by the factor k-1.

  10. Low light level all-optical switching in a four-level atom-cavity system

    NASA Astrophysics Data System (ADS)

    Duan, Yafan; Lin, Gongwei; Zhang, Shicheng; Niu, Yueping; Gong, Shangqing

    2016-01-01

    We report on an all-optical switching in a double ∧ four-level atom-cavity system both theoretically and experimentally. In this system, an extra coherence between two ground states is induced by two coupling lasers, thus the loss of the cavity field decreases. Then, we can use one weak field to control another weak field at low light levels. Compared to the three-level atom-cavity system, the power of the switching laser can be much weaker in the four-level atom-cavity system.

  11. Nanoscale Confinement of All-Optical Magnetic Switching in TbFeCo

    NASA Astrophysics Data System (ADS)

    Liu, Tianmin; Wang, Tianhan; Reid, Alexander; Savoini, Matteo; Wu, Xiaofei; Konene, Benny; Granitzka, Patrick; Graves, Catherine; Higley, Daniel; Chen, Zhao; Razinskas, Gary; Hantschmann, Markus; Scherz, Andreas; Stohr, Joachim; Tsukamoto, Arata; Hecht, Bert; Kimel, Alexey; Kirilyuk, Andrei; Rasing, Theo; Durr, Hermann; Durr/Stohr Team; Theo Rasing Team; Arata Tsukamoto Team; Bert Hecht Team

    Gold two-wire antennas structures are placed upon the surface of the all-optical switching film TbFeCo. They resonate with the optical field and create a field enhancement in its vicinity, which is used to confine the area where optical switching can occur. It is demonstrated that single femtosecond optical laser pulses can reverse magnetization in a controllable fashion by such confinement. The magnetic states are imaged using resonant X-ray holography and magnetic circular dichroism. The results not only show the feasibility of controllable switching with antenna assistance but also demonstrate the highly inhomogeneous nature of the switching process, which is attributed to the material's heterogeneity. Research is supported by U.S. DOE, Office of Basic Energy Sciences, Materials Sciences and Engineering Division.

  12. High speed all-optical data processing in fast semiconductor and optical fiber based devices

    NASA Astrophysics Data System (ADS)

    Sun, Hongzhi

    Future generations of communication systems demand ultra high speed data processing and switching components. Conventional electrical parts have reached their bottleneck both speed-wise and efficiency-wise. The idea of manipulating high speed data in optical domain is gaining more popularity. In this PhD thesis work, we proposed and demonstrated various schemes of all-optical Boolean logic gate at data rate as high as 80Gb/s by using semiconductor optical amplifier (SOA), SOA Mach-Zehnder interferometer (SOA-MZI), highly nonlinear fiber (HNLF) and optical fiber based components. With the invention of quantum dot (QD) based semiconductor devices, speed limit of all optical data processing has a chance to boost up to 250Gb/s. We proposed and simulated QD-SOA based Boolean functions, and their application such as shift register and pseudorandom bit sequence generation (PRBS). Clock and data recovery of high speed data signals has been simulated and demonstrated by injection lock and phase lock loop techniques in a fiber and SOA ring and an optical-electrical (OE) feedback loop.

  13. Nanoscale sub-100 picosecond all-optical magnetization switching in GdFeCo microstructures.

    PubMed

    Le Guyader, L; Savoini, M; El Moussaoui, S; Buzzi, M; Tsukamoto, A; Itoh, A; Kirilyuk, A; Rasing, T; Kimel, A V; Nolting, F

    2015-01-01

    Ultrafast magnetization reversal driven by femtosecond laser pulses has been shown to be a promising way to write information. Seeking to improve the recording density has raised intriguing fundamental questions about the feasibility of combining ultrafast temporal resolution with sub-wavelength spatial resolution for magnetic recording. Here we report on the experimental demonstration of nanoscale sub-100 ps all-optical magnetization switching, providing a path to sub-wavelength magnetic recording. Using computational methods, we reveal the feasibility of nanoscale magnetic switching even for an unfocused laser pulse. This effect is achieved by structuring the sample such that the laser pulse, via both refraction and interference, focuses onto a localized region of the structure, the position of which can be controlled by the structural design. Time-resolved photo-emission electron microscopy studies reveal that nanoscale magnetic switching employing such focusing can be pushed to the sub-100 ps regime. PMID:25581133

  14. All-optical scanhead for ultrasound and photoacoustic imaging-Imaging mode switching by dichroic filtering.

    PubMed

    Hsieh, Bao-Yu; Chen, Sung-Liang; Ling, Tao; Guo, L Jay; Li, Pai-Chi

    2014-03-01

    Ultrasound (US) and photoacoustic (PA) multimodality imaging has the advantage of combining good acoustic resolution with high optical contrast. The use of an all-optical scanhead for both imaging modalities can simplify integration of the two systems and miniaturize the imaging scanhead. Herein we propose and demonstrate an all-optical US/PA scanhead using a thin plate for optoacoustic generation in US imaging, a polymer microring resonator for acoustic detection, and a dichroic filter to switch between the two imaging modes by changing the laser wavelength. A synthetic-aperture focusing technique is used to improve the resolution and contrast. Phantom images demonstrate the feasibility of this design, and show that axial and lateral resolutions of 125 μm and 2.52°, respectively, are possible. PMID:25302154

  15. All-optical packet header and payload separation for un-slotted optical packet switched networks

    NASA Astrophysics Data System (ADS)

    Ji, Wei; Zhang, Min; Ye, Peida

    2005-11-01

    A novel all-optical header and payload separation technique that can be utilized in un-slotted optical packet switched networks is presented. The technique uses a modified TOAD for packet header extraction with differential modulation scheme and two SOAs that perform a simple XOR operation between the packet and its self-derived header to get the separated payload. The main virtue of this system is simple structure and need not any additional continuous pulses. Through numerical simulations, the operating characteristics of the scheme are illustrated. In addition, the parameters of the system are discussed and designed to optimize the operation performance.

  16. Synthesis and characterization of azo-containing organometallic thin films for all optical switching applications

    NASA Astrophysics Data System (ADS)

    Gatri, R.; Fillaut, J.-L.; Mysliwiec, J.; Szukalski, A.; Bartkiewicz, S.; El-Ouazzani, H.; Guezguez, I.; Khammar, F.; Sahraoui, B.

    2012-05-01

    Novel photoresponsive materials based on azo-containing bifunctional ruthenium-acetylides have been synthesized. All optical switching based on the Optical Kerr Effect in the organometallic thin films based on ruthenium(II) acetylides containing an azobenzene moiety as a photochromic unit in the main pi-conjugated system dispersed in a poly(methyl methacrylate) matrix has been observed. The excitation beam was delivered from a picosecond laser at wavelength 532 nm while dynamics of induced sample birefringence was probed by a non-absorbed linearly polarized beam of cw He-Ne laser (632.8 nm). The influence of ruthenium part on dynamics of molecular motions has been shown.

  17. Thermal lens and all optical switching of new organometallic compound doped polyacrylamide gel

    NASA Astrophysics Data System (ADS)

    Badran, Hussain Ali

    In this work thermal lens spectrometry (TLS) is applied to investigate the thermo-optical properties of new organometallic compound containing azomethine group, Dichloro bis [2-(2-hydroxybenzylideneamino)-5-methylphenyl] telluride platinum(II), doped polyacrylamide gel using transistor-transistor logic (TTL) modulated cw 532 nm laser beam as an excitation beam modulated at 10 Hz frequency and probe beam wavelength 635 nm at 14 mW. The technique is applied to determine the thermal diffusivities, ds/dT and the linear thermal expansion coefficient of the sample. All-optical switching effects with low background and high stability are demonstrated.

  18. All-optical encryption based on interleaved waveband switching modulation for optical network security.

    PubMed

    Fok, Mable P; Prucnal, Paul R

    2009-05-01

    All-optical encryption for optical code-division multiple-access systems with interleaved waveband-switching modulation is experimentally demonstrated. The scheme explores dual-pump four-wave mixing in a 35 cm highly nonlinear bismuth oxide fiber to achieve XOR operation of the plaintext and the encryption key. Bit 0 and bit 1 of the encrypted data are represented by two different wavebands. Unlike on-off keying encryption methods, the encrypted data in this approach has the same intensity for both bit 0 and bit 1. Thus no plaintext or ciphertext signatures are observed. PMID:19412257

  19. A simple and effective theory for all-optical helicity-dependent spin switching

    NASA Astrophysics Data System (ADS)

    Zhang, Guoping; Bai, Yihua; George, Thomas F.

    All-optical helicity-dependent spin switching (AOS) represents a new frontier in magnetic recording technology, where a single ultrafast laser pulse, without any assistance from an external magnetic field, can permanently switch spin within a few hundred femtoseconds. By contrast, the existing theory does rely on an artificial magnetic field to switch spins. Here we develop a microscopic spin switch theory, free of any artificial field, and demonstrate unambiguously that both circularly and linearly polarized lights can switch spins faithfully. Our theory is based on the Hookean theory, but includes two new elements: spin-orbit coupling and exchange interaction. We predict that left (right) circularly polarized light only flips (flops) spin, a symmetry constraint that strongly favors ferrimagnetic orderings over ferromagnetic ones, with the allowable exchange interaction within 10 meV, consistent with all prior theories. The effect of the laser amplitude is highly nonlinear: If it is too weak, AOS does not occur, but if too strong, the spin cants; a compromise between them produces a narrow spin reversal window as observed experimentally. We envision that our model can be easily extended to describe spin frustrated systems and multiferroics, where the light-spin interaction Supported by the U.S. Department of Energy under Contract No. DE-FG02-06ER46304 and the National Energy Research Scientific Computing Center.

  20. Power and length requirements for all-optical switching in semiconductor-doped glass waveguides

    NASA Astrophysics Data System (ADS)

    Mayweather, Derek T.; Digonnet, Michel J. F.; Pantell, Richard H.; Shaw, H. J.

    1994-10-01

    We present a theoretical model that computes the nonlinear index (n2) of semiconductor- doped glasses (SDG), based on the material's properties, and predicts the power and length requirements, as well as the optimum operating wavelengths, for an all-optical SDG waveguide switch. The main conclusions are that (1) n2 depends strongly on pump intensity, which partly explains the large disparity in reported values of n2, (2) the pump and signal wavelengths should be in specific and different ranges to minimize switching power and signal loss, (3) for CdSSe- and CdTe-doped glasses, n2 is relatively small, and the switching power requirement for these two SDGs is consequently quite high (2 - 16 W). We provide evidence that this weak nonlinearity, compared to that of similar semiconductors in bulk, is due to the strong nonradiative recombination of carriers arising from the small size of the semiconductor microcrystallites. Projections indicate that the switching power would be reduced by up to three orders of magnitude by increasing the microcrystallite size, thus producing a slower (ns) but more power-efficient switch.

  1. Integrated all-optical logic and arithmetic operations with the help of a TOAD-based interferometer device--alternative approach

    NASA Astrophysics Data System (ADS)

    Nath Roy, Jitendra; Gayen, Dilip Kumar

    2007-08-01

    Interferometric devices have drawn a great interest in all-optical signal processing for their high-speed photonic activity. The nonlinear optical loop mirror provides a major support to optical switching based all-optical logic and algebraic operations. The gate based on the terahertz optical asymmetric demultiplexer (TOAD) has added new momentum in this field. Optical tree architecture (OTA) plays a significant role in the optical interconnecting network. We have tried to exploit the advantages of both OTA- and TOAD-based switches. We have proposed a TOAD-based tree architecture, a new and alternative scheme, for integrated all-optical logic and arithmetic operations.

  2. Deterministic character of all-optical magnetization switching in GdFe-based ferrimagnetic alloys

    NASA Astrophysics Data System (ADS)

    Le Guyader, L.; El Moussaoui, S.; Buzzi, M.; Savoini, M.; Tsukamoto, A.; Itoh, A.; Kirilyuk, A.; Rasing, Th.; Nolting, F.; Kimel, A. V.

    2016-04-01

    Using photoemission electron microscopy with x-ray magnetic circular dichroism as a contrast mechanism, new insights into the all-optical magnetization switching (AOS) phenomenon in GdFe-based rare-earth transition-metal ferrimagnetic alloys are provided. From a sequence of static images taken after single linearly polarized laser pulse excitation, the repeatability of AOS can be quantified with a correlation coefficient. It is found that low coercivity enables thermally activated domain-wall motion, limiting in turn the repeatability of the switching. Time-resolved measurements of the magnetization dynamics reveal that while AOS occurs below and above the magnetization compensation temperature TM, it is not observed in GdFe samples where TM is absent. Finally, AOS is experimentally demonstrated against an applied magnetic field of up to 180 mT.

  3. All optical switching in a photochromic dye-doped biopolymeric matrix

    NASA Astrophysics Data System (ADS)

    Mysliwiec, Jaroslaw; Malak, Anna; Sikora, Joanna; Miniewicz, Andrzej; Sahraoui, Bouchta; Rau, Ileana; Kajzar, François

    2011-09-01

    All optical switching has been studied using the Optical Kerr Effect (OKE) configuration in a biopolymer matrix containing a photochromic molecule. The biopolymer system consisted of a deoxyribonucleic acid blended with cationic surfactant molecule cetyltrimethyl-ammonium chloride suitable for optical quality thin film fabrication. The excitation beams inducing birefringence were delivered from a continuous wave laser at 473 and chopped using a variable frequency chopper. Additionally auxiliary nanosecond pulses coming from Nd:YAG laser were used. The birefringence was instantaneously monitored by a weak non-absorbed light from a cw He-Ne laser working at 632.8 nm under crossed polarizer system. Excellent switching times in the range of microseconds and full reversibility of the studied processes have been observed.ïýïýïý

  4. All-Optical Generation and Switching of Few-Cycle Millimeter-Wave Pulses

    NASA Astrophysics Data System (ADS)

    Lin, Jim-Wein; Wun, Jhih-Min; Shi, Jin-Wei; Pan, Ci-Ling

    2014-10-01

    We conducted a comparative study of two schemes of photonic generation and switching of few-cycle sub-THz or millimeter wave (MMW) pulses by use of a photonic-transmitter-mixer (PTM) module with a broadband and high-power near-ballistic uni-traveling carrier photodiode (NBUTC-PD). In the first scheme, we performed all-optical ultra-fast switching (bias modulation) of the PTM injected with a 93 GHz optical local-oscillator signal. Sub-2-cycle short MMW pulses with central frequency at 93 GHz were generated. To compare, in scheme 2, we employed femtosecond optical short pulses to directly excite the PTM under a DC bias (optical modulation). The former approach is shown to be capable of providing much less signal distortion and much shorter pulse duration than the latter.

  5. All-optical Mach-Zehnder interferometer switching based on the phase-shift multiplication effect of an analog on the electromagnetically induced transparency effect

    NASA Astrophysics Data System (ADS)

    Wang, Boyun; Xiong, Liangbin; Zeng, Qingdong; Chen, Zhihong; Lv, Hao; Ding, Yaoming; Du, Jun; Yu, Huaqing

    2016-06-01

    We theoretically and numerically investigate all-optical Mach-Zehnder interferometer switching based on the phase-shift multiplication effect of an all-optical analog on the electromagnetically induced transparency effect. The free-carrier plasma dispersion effect modulation method is applied to improve the tuning rate with a response time of picoseconds. All observed schemes are analyzed rigorously through finite-difference time-domain simulations and coupled-mode formalism. Compared with no phase-shift multiplication effect, the average pump power of all-optical switching required to yield the π-phase shift difference decreases by 55.1%, and the size of the modulation region is reduced by 50.1% when the average pump power reaches 60.8 mW. This work provides a new direction for low-power consumption and miniaturization of microstructure integration light-controlled switching devices in optical communication and quantum information processing.

  6. Ultrasmall all-optical plasmonic switch and its application to superresolution imaging

    PubMed Central

    Wu, Hsueh-Yu; Huang, Yen-Ta; Shen, Po-Ting; Lee, Hsuan; Oketani, Ryosuke; Yonemaru, Yasuo; Yamanaka, Masahito; Shoji, Satoru; Lin, Kung-Hsuan; Chang, Chih-Wei; Kawata, Satoshi; Fujita, Katsumasa; Chu, Shi-Wei

    2016-01-01

    Because of their exceptional local-field enhancement and ultrasmall mode volume, plasmonic components can integrate photonics and electronics at nanoscale, and active control of plasmons is the key. However, all-optical modulation of plasmonic response with nanometer mode volume and unity modulation depth is still lacking. Here we show that scattering from a plasmonic nanoparticle, whose volume is smaller than 0.001 μm3, can be optically switched off with less than 100 μW power. Over 80% modulation depth is observed, and shows no degradation after repetitive switching. The spectral bandwidth approaches 100 nm. The underlying mechanism is suggested to be photothermal effects, and the effective single-particle nonlinearity reaches nearly 10−9 m2/W, which is to our knowledge the largest record of metallic materials to date. As a novel application, the non-bleaching and unlimitedly switchable scattering is used to enhance optical resolution to λ/5 (λ/9 after deconvolution), with 100-fold less intensity requirement compared to similar superresolution techniques. Our work not only opens up a new field of ultrasmall all-optical control based on scattering from a single nanoparticle, but also facilitates superresolution imaging for long-term observation. PMID:27063920

  7. Ultrasmall all-optical plasmonic switch and its application to superresolution imaging.

    PubMed

    Wu, Hsueh-Yu; Huang, Yen-Ta; Shen, Po-Ting; Lee, Hsuan; Oketani, Ryosuke; Yonemaru, Yasuo; Yamanaka, Masahito; Shoji, Satoru; Lin, Kung-Hsuan; Chang, Chih-Wei; Kawata, Satoshi; Fujita, Katsumasa; Chu, Shi-Wei

    2016-01-01

    Because of their exceptional local-field enhancement and ultrasmall mode volume, plasmonic components can integrate photonics and electronics at nanoscale, and active control of plasmons is the key. However, all-optical modulation of plasmonic response with nanometer mode volume and unity modulation depth is still lacking. Here we show that scattering from a plasmonic nanoparticle, whose volume is smaller than 0.001 μm(3), can be optically switched off with less than 100 μW power. Over 80% modulation depth is observed, and shows no degradation after repetitive switching. The spectral bandwidth approaches 100 nm. The underlying mechanism is suggested to be photothermal effects, and the effective single-particle nonlinearity reaches nearly 10(-9) m(2)/W, which is to our knowledge the largest record of metallic materials to date. As a novel application, the non-bleaching and unlimitedly switchable scattering is used to enhance optical resolution to λ/5 (λ/9 after deconvolution), with 100-fold less intensity requirement compared to similar superresolution techniques. Our work not only opens up a new field of ultrasmall all-optical control based on scattering from a single nanoparticle, but also facilitates superresolution imaging for long-term observation. PMID:27063920

  8. Ultrasmall all-optical plasmonic switch and its application to superresolution imaging

    NASA Astrophysics Data System (ADS)

    Wu, Hsueh-Yu; Huang, Yen-Ta; Shen, Po-Ting; Lee, Hsuan; Oketani, Ryosuke; Yonemaru, Yasuo; Yamanaka, Masahito; Shoji, Satoru; Lin, Kung-Hsuan; Chang, Chih-Wei; Kawata, Satoshi; Fujita, Katsumasa; Chu, Shi-Wei

    2016-04-01

    Because of their exceptional local-field enhancement and ultrasmall mode volume, plasmonic components can integrate photonics and electronics at nanoscale, and active control of plasmons is the key. However, all-optical modulation of plasmonic response with nanometer mode volume and unity modulation depth is still lacking. Here we show that scattering from a plasmonic nanoparticle, whose volume is smaller than 0.001 μm3, can be optically switched off with less than 100 μW power. Over 80% modulation depth is observed, and shows no degradation after repetitive switching. The spectral bandwidth approaches 100 nm. The underlying mechanism is suggested to be photothermal effects, and the effective single-particle nonlinearity reaches nearly 10‑9 m2/W, which is to our knowledge the largest record of metallic materials to date. As a novel application, the non-bleaching and unlimitedly switchable scattering is used to enhance optical resolution to λ/5 (λ/9 after deconvolution), with 100-fold less intensity requirement compared to similar superresolution techniques. Our work not only opens up a new field of ultrasmall all-optical control based on scattering from a single nanoparticle, but also facilitates superresolution imaging for long-term observation.

  9. Engineered materials for all-optical helicity-dependent magnetic switching

    NASA Astrophysics Data System (ADS)

    Fullerton, Eric

    2014-03-01

    The possibilities of manipulating magnetization without applied magnetic fields have attracted growing attention over the last fifteen years. The low-power manipulation of magnetization, preferably at ultra-short time scales, has become a fundamental challenge with implications for future magnetic information memory and storage technologies. Here we explore the optical manipulation of the magnetization of engineered materials and devices using 100 fs optical pulses. We demonstrate that all optical - helicity dependent switching (AO-HDS) can be observed not only in selected rare-earth transition-metal (RE-TM) alloy films but also in a much broader variety of materials, including alloys, multilayers, heterostructures and RE-free Co-Ir-based synthetic ferrimagnets. The discovery of AO-HDS in RE-free TM-based synthetic ferrimagnets can enable breakthroughs for numerous applications since it exploits materials that are currently used in magnetic data storage, memories and logic technologies. In addition, this materials study of AO-HDS offers valuable insight into the underlying mechanisms involved. Indeed the common denominator of the diverse structures showing AO-HDS in this study is that two ferromagnetic sub-lattices exhibit magnetization compensation (and therefore angular momentum compensation) at temperatures near or above room temperature. We are highlighting that compensation plays a major role and that this compensation can be established at the atomic level as in alloys but also over a larger nanometers scale as in the multilayers or in heterostructures. We will also discuss the potential to extend AO-HDS to new classes of magnetic materials. This work was done in collaboration with S. Mangin, M. Gottwald, C-H. Lambert, D. Steil, V. Uhlíř, L. Pang, M. Hehn, S. Alebrand, M. Cinchetti, G. Malinowski, Y. Fainman, and M. Aeschlimann. Supported by the ANR-10-BLANC-1005 ``Friends,'' a grant from the Advanced Storage Technology Consortium, Partner University Fund

  10. All-optical devices based on carrier nonlinearities for optical filtering and spectral equalization

    NASA Astrophysics Data System (ADS)

    Burger, Johan Petrus

    InGaAsP-based quantum wells can display nonlinear refractive index changes of ~0.1 near the band-edge for intrawell carrier density changes of 1 × 1018cm-3, due to effects like bandfilling and the plasma effect, which make these materials promising for the realization of all-optical signal processing devices, as demonstrated here. A novel single passband filter with sub-gigahertz bandwidth and greater than 40nm of tunability was experimentally demonstrated. The filter uses the detuning characteristics of nearly degenerate four-wave mixing in a broad area semiconductor optical amplifier to obtain frequency selectivity. The key to this demonstration was the spatial separation of the filtered signal from the input signal, based on their different propagation directions. An analysis of an analogous integrated optic dual-order mode nonlinear mode-converter, with integrated mode sorters which separate the signal from the interacting modes, was also undertaken. This device is promising as a filter, a wavelength converter, notch filter, and a wavelength recognizing switch. Novel ways to prevent carrier diffusion, which washes out the nonlinear grating, were suggested. It is important to have a large mutual overlap to modal overlap ratio of the two interacting modes on the nonlinear medium, because the mixing efficiency scales as the fourth power of this number. Three types of integrated optic limiters (based on Kerr- like nonlinearities) namely an all-optical cutoff modulator, a nonlinear Y-branch and an interferometer with an internal Kerr element, were theoretically investigated. A beam propagation program, which can solve the propagation of an optical field in a semiconductor in the presence of carrier diffusion, was developed for the numerical analysis of these structures. A negative feedback mechanism was identified in the Y-branch devices and a new limiting configuration was discovered in a Y- branch with a selectively placed defocusing nonlinearity. Dichroic

  11. Engineered materials for all-optical helicity-dependent magnetic switching.

    PubMed

    Mangin, S; Gottwald, M; Lambert, C-H; Steil, D; Uhlíř, V; Pang, L; Hehn, M; Alebrand, S; Cinchetti, M; Malinowski, G; Fainman, Y; Aeschlimann, M; Fullerton, E E

    2014-03-01

    The possibility of manipulating magnetic systems without applied magnetic fields have attracted growing attention over the past fifteen years. The low-power manipulation of the magnetization, preferably at ultrashort timescales, has become a fundamental challenge with implications for future magnetic information memory and storage technologies. Here we explore the optical manipulation of the magnetization in engineered magnetic materials. We demonstrate that all-optical helicity-dependent switching (AO-HDS) can be observed not only in selected rare earth-transition metal (RE-TM) alloy films but also in a much broader variety of materials, including RE-TM alloys, multilayers and heterostructures. We further show that RE-free Co-Ir-based synthetic ferrimagnetic heterostructures designed to mimic the magnetic properties of RE-TM alloys also exhibit AO-HDS. These results challenge present theories of AO-HDS and provide a pathway to engineering materials for future applications based on all-optical control of magnetic order. PMID:24531398

  12. Burst switching without guard interval in all-optical software-define star intra-data center network

    NASA Astrophysics Data System (ADS)

    Ji, Philip N.; Wang, Ting

    2014-02-01

    Optical switching has been introduced in intra-data center networks (DCNs) to increase capacity and to reduce power consumption. Recently we proposed a star MIMO OFDM-based all-optical DCN with burst switching and software-defined networking. Here, we introduce the control procedure for the star DCN in detail for the first time. The timing, signaling, and operation are described for each step to achieve efficient bandwidth resource utilization. Furthermore, the guidelines for the burst assembling period selection that allows burst switching without guard interval are discussed. The star all-optical DCN offers flexible and efficient control for next-generation data center application.

  13. All-optical cross-bar network architecture using TOAD based interferometric switch and designing of reconfigurable logic unit

    NASA Astrophysics Data System (ADS)

    Chattopadhyay, Tanay

    2011-12-01

    The design of all-optical 2 × 2 Terahertz Optical Asymmetric Demultiplexer (TOAD) based interferometric switch is proposed and described in this manuscript. Numerical simulation has been done to achieve the performance of the switch. Using this 2 × 2 TOAD based switch, cross-bar network architecture is designed. A reconfigurable logic unit is also proposed in this manuscript, which can perform 16-Boolean logical operations.

  14. REMOTE CONTROLLED SWITCHING DEVICE

    DOEpatents

    Hobbs, J.C.

    1959-02-01

    An electrical switching device which can be remotely controlled and in which one or more switches may be accurately operated at predetermined times or with predetermined intervening time intervals is described. The switching device consists essentially of a deck, a post projecting from the deck at right angles thereto, cam means mounted for rotation around said posts and a switch connected to said deck and actuated by said cam means. Means is provided for rotating the cam means at a constant speed and the switching apparatus is enclosed in a sealed container with external adjusting means and electrical connection elements.

  15. Numerical investigation of high-contrast ultrafast all-optical switching in low-refractive-index polymeric photonic crystal nanobeam microcavities

    NASA Astrophysics Data System (ADS)

    Meng, Zi-Ming; Zhong, Xiao-Lan; Wang, Chen; Li, Zhi-Yuan

    2012-06-01

    With the development of micro- or nano-fabrication technologies, great interest has been aroused in exploiting photonic crystal nanobeam structures. In this article the design of high-quality-factor (Q) polymeric photonic crystal nanobeam microcavities suitable for realizing ultrafast all-optical switching is presented based on the three-dimensional finite-difference time-domain method. Adopting the pump-probe technique, the ultrafast dynamic response of the all-optical switching in a nanobeam microcavity with a quality factor of 1000 and modal volume of 1.22 (λ/n)3 is numerically studied and a switching time as fast as 3.6 picoseconds is obtained. Our results indicate the great promise of applying photonic crystal nanobeam microcavities to construct integrated ultrafast tunable photonic devices or circuits incorporating polymer materials with large Kerr nonlinearity and ultrafast response speed.

  16. All-optical sub-ps switching and parallel logic gates with bacteriorhodopsin (BR) protein and BR-gold nanoparticles

    NASA Astrophysics Data System (ADS)

    Roy, Sukhdev; Yadav, Chandresh

    2014-12-01

    We propose a model for the early sub-picosecond (sub-ps) transitions in the photochromic bacteriorhodopsin (BR) protein photocycle (B570 → H → I460 → J625 → B570) and present a detailed analysis of ultrafast all-optical switching for different pump-probe combinations. BR excitation with 120 fs pump pulses at 570 or 612 nm results in the switching of cw probe beams at 460 and 580 nm exhibiting reverse saturable absorption (RSA) and saturable absorption (SA) respectively. The effect of pump intensity, pump pulse width, lifetime of I460 state, thickness and concentration on switching has been studied in detail. It is shown that low intensity (MW cm-2), high contrast (100%), sub-ps all-optical switching can be achieved with BR-gold nanoparticle solutions. The validity of the proposed model is evident from the good agreement of theoretical simulations with reported experimental results. The switching characteristics have been optimized to design ultrafast all-optical parallel NOT, OR, AND and the universal NOR and NAND logic gates. High contrast, ultrafast switching at relatively lower pump intensities, compared to other organic molecules, opens up exciting prospects for ultrafast, all-optical information processing with BR and BR nano-biophotonic hybrid materials.

  17. 25th anniversary article: Design of polymethine dyes for all-optical switching applications: guidance from theoretical and computational studies.

    PubMed

    Gieseking, Rebecca L; Mukhopadhyay, Sukrit; Risko, Chad; Marder, Seth R; Brédas, Jean-Luc

    2014-01-01

    All-optical switching--controlling light with light--has the potential to meet the ever-increasing demand for data transmission bandwidth. The development of organic π-conjugated molecular materials with the requisite properties for all-optical switching applications has long proven to be a significant challenge. However, recent advances demonstrate that polymethine dyes have the potential to meet the necessary requirements. In this review, we explore the theoretical underpinnings that guide the design of π-conjugated materials for all-optical switching applications. We underline, from a computational chemistry standpoint, the relationships among chemical structure, electronic structure, and optical properties that make polymethines such promising materials. PMID:24302357

  18. Silicon Photonics: All-Optical Devices for Linear and Nonlinear Applications

    NASA Astrophysics Data System (ADS)

    Driscoll, Jeffrey B.

    Silicon photonics has grown rapidly since the first Si electro-optic switch was demonstrated in 1987, and the field has never grown more quickly than it has over the past decade, fueled by milestone achievements in semiconductor processing technologies for low loss waveguides, high-speed Si modulators, Si lasers, Si detectors, and an enormous toolbox of passive and active integrated devices. Silicon photonics is now on the verge of major commercialization breakthroughs, and optical communication links remain the force driving integrated and Si photonics towards the first commercial telecom and datacom transceivers; however other potential and future applications are becoming uncovered and refined as researchers reveal the benefits of manipulating photons on the nanoscale. This thesis documents an exploration into the unique guided-wave and nonlinear properties of deeply-scaled high-index-contrast sub-wavelength Si waveguides. It is found that the tight confinement inherent to single-mode channel waveguides on the silicon-on-insulator platform lead to a rich physics, which can be leveraged for new devices extending well beyond simple passive interconnects and electro-optic devices. The following chapters will concentrate, in detail, on a number of unique physical features of Si waveguides and extend these attributes towards new and interesting devices. Linear optical properties and nonlinear optical properties are investigated, both of which are strongly affected by tight optical confinement of the guided waveguide modes. As will be shown, tight optical confinement directly results in strongly vectoral modal components, where the electric and magnetic fields of the guided modes extend into all spatial dimensions, even along the axis of propagation. In fact, the longitudinal electric and magnetic field components can be just as strong as the transverse fields, directly affecting the modal group velocity and energy transport properties since the longitudinal fields

  19. Photonic Switching Devices Using Light Bullets

    NASA Technical Reports Server (NTRS)

    Goorjian, Peter M. (Inventor)

    1997-01-01

    The present invention is directed toward a unique ultra-fast, all-optical switching device or switch made with readily available, relatively inexpensive, highly nonlinear photonic glasses. These photonic glasses have a sufficiently negative group velocity dispersion and high nonlinear index of refraction to support stable light bullets. The light bullets counterpropagate through, and interact within the waveguide to selectively change each others' directions of propagation into predetermined channels. In one embodiment, the switch utilizes a rectangularly planar slab waveguide, and further includes two central channels and a plurality of lateral channels for guiding the light bullets into and out of the waveguide. One advantage presented by the present all-optical switching device lies in its practical use of light bullets, thus preventing the degeneration of the pulses due to dispersion and diffraction at the front and back of the pulses. Another feature of the switching device is the relative insensitivity of the collision process to the time difference in which the counter-propagating pulses enter the waveguide. since. contrary to conventional co-propagating spatial solitons, the relative phase of the colliding pulses does not affect the interaction of these pulses. Yet another feature of the present all-optical switching device is the selection of the light pulse parameters which enables the generation of light bullets in highly nonlinear glasses.

  20. Microdisk resonator assisted all-optical switching with improved speed using a reverse-biased p-n diode

    NASA Astrophysics Data System (ADS)

    Xie, Jingya; Zhou, Linjie; Li, Xinwan; Chen, Jianping

    2015-05-01

    We present a compact and power efficient all-optical switching using a silicon microdisk resonator integrated with a p-n junction. We study the dependence of free-carrier lifetime, one of the most critical parameters to determine the switching speed, on reverse bias, optical intensity, and p-n junction position and dimension. Our experiments reveal that the carrier lifetime decreases with the increasing reverse bias, consistent with the theoretical results. The all-optical switching of a 211-1 non-return-to-zero pseudo-random binary sequence (PRBS) signal at a data rate of 10 Gbits/s is demonstrated with p-n junction reversely biased at -15 V and the pump power being 5.96 dBm.

  1. Properties of an ultrafast all-optical switching window in an integrated silicon-based Mach - Zehnder interferometer

    SciTech Connect

    Wu Jianwei; Luo Fengguang; Yu Zhihua; Tao Qing

    2009-03-31

    An ultrafast all-optical switch based on the integrated Mach - Zehnder interferometer (MZI) with two arms consisting of identical silicon-on-insulator (SOI) optical waveguides is presented. The operability of the presented interferometer is simulated both for the continue wave (cw) and pulsed probe signals. It is shown that at the output port of the MZI, the switching window of the probe signal is strongly dependent on the energy and duration of the ultrafast control pulse and the SOI waveguide length. In addition, the initial delay time between both two optical waves will significantly affect the optical switching window when a pulsed probe signal wave is used. (integrated optics)

  2. A new optical neuron device for all-optical neural networks

    NASA Astrophysics Data System (ADS)

    Akiyama, Koji; Takimoto, Akio; Miyauchi, Michihiro; Kuratomi, Yasunori; Asayama, Junko; Ogawa, Hisahito

    1991-12-01

    A new optical neuron device has been developed. The device can perform both summation and thresholding operations in optics, and consists of a PIN a Si:H photoreceptor, aluminum neuron electrodes and a ferroelectric liquid crystal light modulator. The a-Si:H photoreceptor shows characteristics of an ideal quantum efficiency and a good linearity. The optical neuron device exhibits a response time of about 30 microns for incident light power of 9 microW and a contrast ratio of 300:1. Using this neuron device, a lenslet array and a memory mask, an all-optical neural network has been constructed. The network demonstrates an associate memory function on purely optical parallel processing without any help from electric computation.

  3. All-optical switching in Sagnac loop mirror containing an ytterbium-doped fiber and fiber Bragg grating.

    PubMed

    Zang, Zhigang

    2013-08-10

    A configuration of all-optical switching based on a Signac loop mirror that incorporates an ytterbium-doped fiber and uniform fiber Bragg grating (FBG) is proposed in this paper. It is found that the transmission spectrum of this structure is the narrow splitting of the reflection spectrum of the FBG. The shift of this ultranarrow transmission spectrum is very sensitive to the intensity of the pump power. Thus, the threshold switching power can be greatly reduced by shifting such narrow transmission spectrum. Compared with the single FBG, the threshold switching power of this configuration is reduced by 4 orders of magnitude. In addition, the results indicate that this optical switching has a high extinction ratio of 20 dB and a ultrafast response time of 3 ns. The operation regime and switching performance under the cross-phase modulation cases are also investigated. PMID:23938421

  4. General Strategy for Broadband Coherent Perfect Absorption and Multi-wavelength All-optical Switching Based on Epsilon-Near-Zero Multilayer Films

    PubMed Central

    Kim, Tae Young; Badsha, Md. Alamgir; Yoon, Junho; Lee, Seon Young; Jun, Young Chul; Hwangbo, Chang Kwon

    2016-01-01

    We propose a general, easy-to-implement scheme for broadband coherent perfect absorption (CPA) using epsilon-near-zero (ENZ) multilayer films. Specifically, we employ indium tin oxide (ITO) as a tunable ENZ material, and theoretically investigate CPA in the near-infrared region. We first derive general CPA conditions using the scattering matrix and the admittance matching methods. Then, by combining these two methods, we extract analytic expressions for all relevant parameters for CPA. Based on this theoretical framework, we proceed to study ENZ CPA in a single layer ITO film and apply it to all-optical switching. Finally, using an ITO multilayer of different ENZ wavelengths, we implement broadband ENZ CPA structures and investigate multi-wavelength all-optical switching in the technologically important telecommunication window. In our design, the admittance matching diagram was employed to graphically extract not only the structural parameters (the film thicknesses and incident angles), but also the input beam parameters (the irradiance ratio and phase difference between two input beams). We find that the multi-wavelength all-optical switching in our broadband ENZ CPA system can be fully controlled by the phase difference between two input beams. The simple but general design principles and analyses in this work can be widely used in various thin-film devices. PMID:26965195

  5. General Strategy for Broadband Coherent Perfect Absorption and Multi-wavelength All-optical Switching Based on Epsilon-Near-Zero Multilayer Films.

    PubMed

    Kim, Tae Young; Badsha, Md Alamgir; Yoon, Junho; Lee, Seon Young; Jun, Young Chul; Hwangbo, Chang Kwon

    2016-01-01

    We propose a general, easy-to-implement scheme for broadband coherent perfect absorption (CPA) using epsilon-near-zero (ENZ) multilayer films. Specifically, we employ indium tin oxide (ITO) as a tunable ENZ material, and theoretically investigate CPA in the near-infrared region. We first derive general CPA conditions using the scattering matrix and the admittance matching methods. Then, by combining these two methods, we extract analytic expressions for all relevant parameters for CPA. Based on this theoretical framework, we proceed to study ENZ CPA in a single layer ITO film and apply it to all-optical switching. Finally, using an ITO multilayer of different ENZ wavelengths, we implement broadband ENZ CPA structures and investigate multi-wavelength all-optical switching in the technologically important telecommunication window. In our design, the admittance matching diagram was employed to graphically extract not only the structural parameters (the film thicknesses and incident angles), but also the input beam parameters (the irradiance ratio and phase difference between two input beams). We find that the multi-wavelength all-optical switching in our broadband ENZ CPA system can be fully controlled by the phase difference between two input beams. The simple but general design principles and analyses in this work can be widely used in various thin-film devices. PMID:26965195

  6. General Strategy for Broadband Coherent Perfect Absorption and Multi-wavelength All-optical Switching Based on Epsilon-Near-Zero Multilayer Films

    NASA Astrophysics Data System (ADS)

    Kim, Tae Young; Badsha, Md. Alamgir; Yoon, Junho; Lee, Seon Young; Jun, Young Chul; Hwangbo, Chang Kwon

    2016-03-01

    We propose a general, easy-to-implement scheme for broadband coherent perfect absorption (CPA) using epsilon-near-zero (ENZ) multilayer films. Specifically, we employ indium tin oxide (ITO) as a tunable ENZ material, and theoretically investigate CPA in the near-infrared region. We first derive general CPA conditions using the scattering matrix and the admittance matching methods. Then, by combining these two methods, we extract analytic expressions for all relevant parameters for CPA. Based on this theoretical framework, we proceed to study ENZ CPA in a single layer ITO film and apply it to all-optical switching. Finally, using an ITO multilayer of different ENZ wavelengths, we implement broadband ENZ CPA structures and investigate multi-wavelength all-optical switching in the technologically important telecommunication window. In our design, the admittance matching diagram was employed to graphically extract not only the structural parameters (the film thicknesses and incident angles), but also the input beam parameters (the irradiance ratio and phase difference between two input beams). We find that the multi-wavelength all-optical switching in our broadband ENZ CPA system can be fully controlled by the phase difference between two input beams. The simple but general design principles and analyses in this work can be widely used in various thin-film devices.

  7. All-optical switching in bacteriorhodopsin based on M state dynamics and its application to photonic logic gates

    NASA Astrophysics Data System (ADS)

    Singh, Chandra Pal; Roy, Sukhdev

    2003-03-01

    All-optical switching has been theoretically analyzed in bacteriorhodopsin (bR) based on nonlinear intensity induced excited state absorption of the M state. The transmission of a cw probe laser beam at 410 nm corresponding to the peak absorption of M state through a bR film is switched by a pulsed pump laser beam at 570 nm that corresponds to the maximum initial B state absorption. The switching characteristics have been numerically simulated using the rate equation approach considering all the six intermediate states (B, K, L, M, N and O) in the bR photocycle. The switching characteristics are shown to be sensitive to various parameters such as the pump pulse width, pump intensity, life time of the M state, thickness of the film and absorption cross-section of the B-state at probe wavelength ( σBp). It has been shown that the probe laser beam can be completely switched off (100% modulation) by the pump laser beam at relatively low pump powers, for σBp=0. The switching characteristics have also been used to theoretically design all-optical NOT, OR, AND and the universal NOR and NAND logic gates with two pulsed pump laser beams using the six state model.

  8. Time-resolved chirp properties of semiconductor optical amplifiers in high-speed all-optical switches

    NASA Astrophysics Data System (ADS)

    Chen, Ligong; Lu, Rongguo; Zhang, Shangjian; Li, Jianfeng; Liu, Yong

    2013-03-01

    The chirp properties of semiconductor optical amplifiers in all-optical switches are numerically investigated using a field propagation model. The chirp dynamics in the blue-shift and red-shift sideband are analyzed under the injection of random optical pump pulses. We also analyze the impact of the blue-detuned filtering scheme that is used to eliminate the pattern effect and enhance the operating speed of the optical switching. The reason for overshoots in eye diagrams in the blue-detuned filtering scheme is explained. We find that overshoots result from the ultrafast blue chirp induced by carrier heating and two-phonon absorption. These results are very useful for semiconductor optical amplifier-based ultrafast all-optical signal processing.

  9. Nonlinear long-period gratings in As2Se3 chalcogenide fiber for all-optical switching

    NASA Astrophysics Data System (ADS)

    Nguyen, H. C.; Yeom, D.-I.; Mägi, E. C.; Fu, L. B.; Kuhlmey, B. T.; Martijn de Sterke, C.; Eggleton, B. J.

    2008-03-01

    We present experimental demonstration of all-optical switching using long-period gratings (LPGs) in highly nonlinear As2Se3 chalcogenide fiber. We use a 135mm grating which is generated using acoustic waves. We characterize the nonlinear pulse propagation through the LPG using picosecond pulses tuned to different wavelengths with respect to the grating resonance. We compare the results with numerical simulations and observe switching at pulse peak powers around 50W, two orders of magnitude smaller than previously demonstrated in silica.

  10. Optimization of the input losses in fiber-optic communications with an acousto-optic all-optical switch.

    PubMed

    Danilyan, A V; Shulgin, V A; Chernov, V E

    2006-06-20

    We study optical losses in the single-mode fiber system with an all-optical switch based on the anisotropic acousto-optic (AO) TeO(2) 2D deflector. It is shown, theoretically and experimentally, that the mismatch of the output-fiber mode profile and the switched optical beam shape depends significantly on the monochromaticity of the light beam and is determined by the frequency dispersion of the laser beam diffracted on a Bragg AO cell. A quantitative analysis of the dependence of the input optical losses on the spectral width of the light beam is presented. PMID:16778941

  11. Multi-function all optical packet switch by periodic wavelength arrangement in an arrayed waveguide grating and wideband optical filters.

    PubMed

    Feng, Kai-Ming; Wu, Chung-Yu; Wen, Yu-Hsiang

    2012-01-16

    By utilizing the cyclic filtering function of an NxN arrayed waveguide grating (AWG), we propose and experimentally demonstrate a novel multi-function all optical packet switching (OPS) architecture by applying a periodical wavelength arrangement between the AWG in the optical routing/buffering unit and a set of wideband optical filters in the switched output ports to achieve the desired routing and buffering functions. The proposed OPS employs only one tunable wavelength converter at the input port to convert the input wavelength to a designated wavelength which reduces the number of active optical components and thus the complexity of the traffic control is simplified in the OPS. With the proposed OPS architecture, multiple optical packet switching functions, including arbitrary packet switching and buffering, first-in-first-out (FIFO) packet multiplexing, packet demultiplexing and packet add/drop multiplexing, have been successfully demonstrated. PMID:22274416

  12. All-optical SR flip-flop based on SOA-MZI switches monolithically integrated on a generic InP platform

    NASA Astrophysics Data System (ADS)

    Pitris, St.; Vagionas, Ch.; Kanellos, G. T.; Kisacik, R.; Tekin, T.; Broeke, R.; Pleros, N.

    2016-03-01

    At the dawning of the exaflop era, High Performance Computers are foreseen to exploit integrated all-optical elements, to overcome the speed limitations imposed by electronic counterparts. Drawing from the well-known Memory Wall limitation, imposing a performance gap between processor and memory speeds, research has focused on developing ultra-fast latching devices and all-optical memory elements capable of delivering buffering and switching functionalities at unprecedented bit-rates. Following the master-slave configuration of electronic Flip-Flops, coupled SOA-MZI based switches have been theoretically investigated to exceed 40 Gb/s operation, provided a short coupling waveguide. However, this flip-flop architecture has been only hybridly integrated with silica-on-silicon integration technology exhibiting a total footprint of 45x12 mm2 and intra-Flip-Flop coupling waveguide of 2.5cm, limited at 5 Gb/s operation. Monolithic integration offers the possibility to fabricate multiple active and passive photonic components on a single chip at a close proximity towards, bearing promises for fast all-optical memories. Here, we present for the first time a monolithically integrated all-optical SR Flip-Flop with coupled master-slave SOA-MZI switches. The photonic chip is integrated on a 6x2 mm2 die as a part of a multi-project wafer run using library based components of a generic InP platform, fiber-pigtailed and fully packaged on a temperature controlled ceramic submount module with electrical contacts. The intra Flip-Flop coupling waveguide is 5 mm long, reducing the total footprint by two orders of magnitude. Successful flip flop functionality is evaluated at 10 Gb/s with clear open eye diagram, achieving error free operation with a power penalty of 4dB.

  13. Photonic Switching Devices Using Light Bullets

    NASA Technical Reports Server (NTRS)

    Goorjian, Peter M. (Inventor)

    1999-01-01

    A unique ultra-fast, all-optical switching device or switch is made with readily available, relatively inexpensive, highly nonlinear optical materials. which includes highly nonlinear optical glasses, semiconductor crystals and/or multiple quantum well semiconductor materials. At the specified wavelengths. these optical materials have a sufficiently negative group velocity dispersion and high nonlinear index of refraction to support stable light bullets. The light bullets counter-propagate through, and interact within the waveguide to selectively change each others' directions of propagation into predetermined channels. In one embodiment, the switch utilizes a rectangularly planar slab waveguide. and further includes two central channels and a plurality of lateral channels for guiding the light bullets into and out of the waveguide. An advantage of the present all-optical switching device lies in its practical use of light bullets, thus preventing the degeneration of the pulses due to dispersion and diffraction at the front and back of the pulses. Another advantage of the switching device is the relative insensitivity of the collision process to the time difference in which the counter-propagating pulses enter the waveguide. since. contrary to conventional co-propagating spatial solitons, the relative phase of the colliding pulses does not affect the interaction of these pulses. Yet another feature of the present all-optical switching device is the selection of the light pulse parameters which enables the generation of light bullets in nonlinear optical materials. including highly nonlinear optical glasses and semiconductor materials such as semiconductor crystals and/or multiple quantum well semiconductor materials.

  14. All-optical packet header and payload separation based on two TOADs for optical packet switched networks

    NASA Astrophysics Data System (ADS)

    Ji, Wei; Zhang, Min; Ye, Peida

    2006-09-01

    We present a novel all-optical header and payload separation technique that can be utilized in Un-Slotted optical packet switched networks. The technique uses two modified TOADs, one is for packet header extraction with differential modulation scheme and the other performs a simple XOR operation between the packet and its self-derived header to get the separated payload. The main virtue of this system is simple structure and low power consumption. Through numerical simulations, the operating characteristics of the scheme are illustrated. In addition, the system parameters are discussed and designed to optimize the performance of the proposed scheme.

  15. Ultrafast, low-power, all-optical switching via birefringent phase-matched transverse mode conversion in integrated waveguides.

    PubMed

    Hellwig, Tim; Epping, Jörn P; Schnack, Martin; Boller, Klaus-J; Fallnich, Carsten

    2015-07-27

    We demonstrate the potential of birefringence-based, all-optical, ultrafast conversion between the transverse modes in integrated optical waveguides by modelling the conversion process by numerically solving the multi-mode coupled nonlinear Schroedinger equations. The observed conversion is induced by a control beam and due to the Kerr effect, resulting in a transient index grating which coherently scatters probe light from one transverse waveguide mode into another. We introduce birefringent phase matching to enable efficient all-optically induced mode conversion at different wavelengths of the control and probe beam. It is shown that tailoring the waveguide geometry can be exploited to explicitly minimize intermodal group delay as well as to maximize the nonlinear coefficient, under the constraint of a phase matching condition. The waveguide geometries investigated here, allow for mode conversion with over two orders of magnitude reduced control pulse energy compared to previous schemes and thereby promise nonlinear mode switching exceeding efficiencies of 90% at switching energies below 1 nJ. PMID:26367581

  16. All-optical switching in granular ferromagnets caused by magnetic circular dichroism

    PubMed Central

    Ellis, Matthew O. A.; Fullerton, Eric E.; Chantrell, Roy W.

    2016-01-01

    Magnetic recording using circularly polarised femto-second laser pulses is an emerging technology that would allow write speeds much faster than existing field driven methods. However, the mechanism that drives the magnetisation switching in ferromagnets is unclear. Recent theories suggest that the interaction of the light with the magnetised media induces an opto-magnetic field within the media, known as the inverse Faraday effect. Here we show that an alternative mechanism, driven by thermal excitation over the anisotropy energy barrier and a difference in the energy absorption depending on polarisation, can create a net magnetisation over a series of laser pulses in an ensemble of single domain grains. Only a small difference in the absorption is required to reach magnetisation levels observed experimentally and the model does not preclude the role of the inverse Faraday effect but removes the necessity that the opto-magnetic field is 10 s of Tesla in strength. PMID:27466066

  17. Wavelength interdependence assessment of all-optical switching in zinc borate glasses

    NASA Astrophysics Data System (ADS)

    Abdel-Baki, Manal; Abdel-Wahab, Fathy; El-Diasty, Fouad

    2012-08-01

    Lithium tungsten borate photonic glass is prepared by the conventional melt-quench technique. Due to semiconductor-like behavior of zinc oxide, the glass is doped by ZnO to adapt its optical nonlinearity. Fresnel-based spectrophotometric measurements and Lorentz dispersion theory are applied to study (in a very wide range of photon energy from 0.5 to 6.2 eV) the dispersion of second-order refractive index, two-photon absorption coefficient, and third-order optical susceptibility of the glass. The figure of merit (FOM) needed for optical switching applications is estimated. We reveal the importance of determining the dispersion of the optical nonlinear parameters to find out the appropriate operating wavelength for optimum FOM of the glass.

  18. All-optical switching in granular ferromagnets caused by magnetic circular dichroism

    NASA Astrophysics Data System (ADS)

    Ellis, Matthew O. A.; Fullerton, Eric E.; Chantrell, Roy W.

    2016-07-01

    Magnetic recording using circularly polarised femto-second laser pulses is an emerging technology that would allow write speeds much faster than existing field driven methods. However, the mechanism that drives the magnetisation switching in ferromagnets is unclear. Recent theories suggest that the interaction of the light with the magnetised media induces an opto-magnetic field within the media, known as the inverse Faraday effect. Here we show that an alternative mechanism, driven by thermal excitation over the anisotropy energy barrier and a difference in the energy absorption depending on polarisation, can create a net magnetisation over a series of laser pulses in an ensemble of single domain grains. Only a small difference in the absorption is required to reach magnetisation levels observed experimentally and the model does not preclude the role of the inverse Faraday effect but removes the necessity that the opto-magnetic field is 10 s of Tesla in strength.

  19. All-optical switching in granular ferromagnets caused by magnetic circular dichroism.

    PubMed

    Ellis, Matthew O A; Fullerton, Eric E; Chantrell, Roy W

    2016-01-01

    Magnetic recording using circularly polarised femto-second laser pulses is an emerging technology that would allow write speeds much faster than existing field driven methods. However, the mechanism that drives the magnetisation switching in ferromagnets is unclear. Recent theories suggest that the interaction of the light with the magnetised media induces an opto-magnetic field within the media, known as the inverse Faraday effect. Here we show that an alternative mechanism, driven by thermal excitation over the anisotropy energy barrier and a difference in the energy absorption depending on polarisation, can create a net magnetisation over a series of laser pulses in an ensemble of single domain grains. Only a small difference in the absorption is required to reach magnetisation levels observed experimentally and the model does not preclude the role of the inverse Faraday effect but removes the necessity that the opto-magnetic field is 10 s of Tesla in strength. PMID:27466066

  20. All-optical Q-switching limiter for high-power gigahertz modelocked diode-pumped solid-state lasers.

    PubMed

    Klenner, Alexander; Keller, Ursula

    2015-04-01

    Passively modelocked diode-pumped solid-state lasers (DPSSLs) with pulse repetition rates in the gigahertz regime suffer from an increased tendency for Q-switching instabilities. Low saturation fluence intracavity saturable absorbers - such as the semiconductor saturable absorber mirrors (SESAMs) - can solve this problem up to a certain average output power limited by the onset of SESAM damage. Here we present a passive stabilization mechanism, an all-optical Q-switching limiter, to reduce the impact of Q-switching instabilities and increase the potential output power of SESAM modelocked lasers in the gigahertz regime. With a proper cavity design a Kerr lens induced negative saturable absorber clamps the maximum fluence on the SESAM and therefore limits the onset of Q-switching instabilities. No critical cavity alignment is required because this Q-switching limiter acts well within the cavity stability regime. Using a proper cavity design, a high-power diode-pumped Yb:CALGO solid-state laser generated sub-100 fs pulses with an average output power of 4.1 W at a pulse repetition rate of 5 GHz. With a pulse duration of 96 fs we can achieve a peak power as high as 7.5 kW directly from the SESAM modelocked laser oscillator without any further external pulse amplification and/or pulse compression. We present a quantitative analysis of this Kerr lens induced Q-switching limiter and its impact on modelocked operation. Our work provides a route to compact high-power multi-gigahertz frequency combs based on SESAM modelocked diode-pumped solid-state lasers without any additional external amplification or pulse compression. PMID:25968691

  1. All-optical spin switching: A new frontier in femtomagnetism — A short review and a simple theory

    NASA Astrophysics Data System (ADS)

    Zhang, G. P.; Latta, T.; Babyak, Z.; Bai, Y. H.; George, Thomas F.

    2016-08-01

    Using an ultrafast laser pulse to manipulate the spin degree of freedom has broad technological appeal. It allows one to control the spin dynamics on a femtosecond time scale. The discipline, commonly called femtomagnetism, started with the pioneering experiment by Beaurepaire and coworkers in 1996, who showed subpicosecond demagnetization occurs in magnetic Ni thin films. This finding has motivated extensive research worldwide. All-optical helicity-dependent spin switching (AO-HDS) represents a new frontier in femtomagnetism, where a single ultrafast laser pulse can permanently switch spin without any assistance from a magnetic field. This review summarizes some of the crucial aspects of this new discipline: key experimental findings, leading mechanisms, controversial issues, and possible future directions. The emphasis is on our latest investigation. We first develop the all-optical spin switching (AOS) rule that determines how the switchability depends on the light helicity. This rule allows one to understand microscopically how the spin is reversed and why the circularly polarized light appears more powerful than the linearly polarized light. Then we invoke our latest spin-orbit coupled harmonic oscillator model to simulate single spin reversal. We consider both continuous wave (cw) excitation and pulsed laser excitation. The results are in a good agreement with the experimental result (a MatLab code is available upon request from the author). We then extend the code to include the exchange interaction among different spin sites. We show where the “inverse-Faraday field” comes from and how the laser affects the spin reversal nonlinearly. Our hope is that this review will motivate new experimental and theoretical investigations and discussions.

  2. Design of high-Q polystyrene nonlinear cavity for ultrafast all-optical switching in mid-infrared photonic crystal slabs with cavity-waveguide structure

    NASA Astrophysics Data System (ADS)

    Fathollahi Khalkhali, T.; Rezaei, B.; Soltani Vala, A.; Kalafi, M.

    2014-09-01

    In this study, we design a nonlinear cavity with ultrafast response speed material in photonic crystal slabs for all-optical switching. We consider triangular lattice photonic crystal slab made from air holes in anisotropic Tellurium background which is on top of Teflon substrate. The cavity itself is then created by enlarging one of the air holes and infiltrating it with polystyrene. Optimization of structural parameters yields a single mode cavity with quality factor of Q=2.5×10, by using the three-dimensional finite-difference time-domain (FDTD) simulation and filter diagonalization approach. This shows great enhancement compared with previous studies in which organic polymer materials have been used. In order to study the coupling characteristic of cavity mode and waveguides, the nonlinear cavity is placed between two waveguides, symmetrically. At the end, we used the FDTD method to investigate shift magnitude of cavity mode resonance frequency under pump light. The designed structure can be helpful to achieve extremely fast response speed in all-optical switching devices with high efficiency in the mid-infrared wavelength range.

  3. Magnetic layer thickness dependence of all-optical magnetization switching in GdFeCo thin films

    NASA Astrophysics Data System (ADS)

    Yoshikawa, Hiroki; El Moussaoui, Souliman; Terashita, Shinnosuke; Ueda, Ryohei; Tsukamoto, Arata

    2016-07-01

    To clarify the relationship between all-optical magnetization switching (AOS) and nonlocal and nonadiabatic energy dissipation process, we focus on the contribution from energy dissipation in the depth direction. Differently designed structure dependence of created magnetic domain is observed from the reversal phenomenon, AOS, or multidomains by thermomagnetic nucleation (TMN) in GdFeCo multilayer thin films. TMN depends on the shared absorbed energy throughout the continuous metallic volume. On the other hand, AOS critically depends on nonadiabatic energy dissipation process with the electron system in sub-picoseconds. Furthermore, the laser fluence dependence of AOS-created domain sizes indicates that the value of irradiated laser fluence threshold per magnetic domain volume is almost constant. However, a lower laser irradiation fluence below 1–2 mW has a larger value and thickness dependence. From these results, we suggest that AOS depends on energy dissipation from the incident surface in the depth direction for a few picoseconds.

  4. A novel all-optical label processing based on multiple optical orthogonal codes sequences for optical packet switching networks

    NASA Astrophysics Data System (ADS)

    Zhang, Chongfu; Qiu, Kun; Xu, Bo; Ling, Yun

    2008-05-01

    This paper proposes an all-optical label processing scheme that uses the multiple optical orthogonal codes sequences (MOOCS)-based optical label for optical packet switching (OPS) (MOOCS-OPS) networks. In this scheme, each MOOCS is a permutation or combination of the multiple optical orthogonal codes (MOOC) selected from the multiple-groups optical orthogonal codes (MGOOC). Following a comparison of different optical label processing (OLP) schemes, the principles of MOOCS-OPS network are given and analyzed. Firstly, theoretical analyses are used to prove that MOOCS is able to greatly enlarge the number of available optical labels when compared to the previous single optical orthogonal code (SOOC) for OPS (SOOC-OPS) network. Then, the key units of the MOOCS-based optical label packets, including optical packet generation, optical label erasing, optical label extraction and optical label rewriting etc., are given and studied. These results are used to verify that the proposed MOOCS-OPS scheme is feasible.

  5. Optical nonlinearities and ultrafast all-optical switching of m-plane GaN in the near-infrared

    SciTech Connect

    Fang, Yu; Zhou, Feng; Yang, Junyi; Yang, Yong; Xiao, Zhengguo; Wu, Xingzhi; Song, Yinglin

    2015-06-22

    We reported a systematic investigation on the three-photon absorption (3PA) spectra and wavelength dispersion of Kerr refraction of bulk m-plane GaN crystal with both polarization E⊥c and E//c by femtosecond Z-scan technique in the near-infrared region from 760 to 1030 nm. Both 3PA spectra and Kerr refraction dispersion were in good agreement with two-band models. The calculated nonlinear figure of merit and measured ultrafast nonlinear refraction dynamics via femtosecond pump-probe with phase object method revealed that m-plane GaN would be a promising candidate for ultrafast all-optical switching and autocorrelation applications at telecommunication wavelengths.

  6. Optical nonlinearities and ultrafast all-optical switching of m-plane GaN in the near-infrared

    NASA Astrophysics Data System (ADS)

    Fang, Yu; Xiao, Zhengguo; Wu, Xingzhi; Zhou, Feng; Yang, Junyi; Yang, Yong; Song, Yinglin

    2015-06-01

    We reported a systematic investigation on the three-photon absorption (3PA) spectra and wavelength dispersion of Kerr refraction of bulk m-plane GaN crystal with both polarization E⊥c and E//c by femtosecond Z-scan technique in the near-infrared region from 760 to 1030 nm. Both 3PA spectra and Kerr refraction dispersion were in good agreement with two-band models. The calculated nonlinear figure of merit and measured ultrafast nonlinear refraction dynamics via femtosecond pump-probe with phase object method revealed that m-plane GaN would be a promising candidate for ultrafast all-optical switching and autocorrelation applications at telecommunication wavelengths.

  7. All-optical quantization and coding scheme for ultrafast analog-to-digital conversion exploiting polarization switches based on nonlinear polarization rotation in semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Wen, Huashun; Wang, Hongxiang; Ji, Yuefeng

    2012-08-01

    A novel all-optical quantization and coding scheme for ultrafast analog-to-digital (A/D) conversion exploiting polarization switches (PSWs) based on nonlinear polarization rotation (NPR) in semiconductor optical amplifiers (SOAs) is proposed. In addition, a theoretical model for the polarization switch based on NPR is presented. Through cascading two PSWs, a 2-period transfer function for 3-bit long all-optical quantization and coding is realized numerically for the first time to the authors' knowledge. The effective number of bits (ENOB), the limitation of bandwidth and conversion speed and the scalability are also investigated. The proposed all-optical quantization and coding scheme, combined with existing all-optical sampling techniques, will enable ultrafast A/D conversion at operating speed of hundreds of Gs/s with at least 3 bit resolution, and allows low optical power requirements, photonic integration, and easy scalability.

  8. Domain size criterion for the observation of all-optical helicity-dependent switching in magnetic thin films

    NASA Astrophysics Data System (ADS)

    El Hadri, Mohammed Salah; Hehn, Michel; Pirro, Philipp; Lambert, Charles-Henri; Malinowski, Grégory; Fullerton, Eric E.; Mangin, Stéphane

    2016-08-01

    To understand the necessary condition for the observation of all-optical helicity-dependent switching (AO-HDS) of magnetization in thin films, we investigated ferromagnetic Co/Pt and Co/Ni multilayers as well as ferrimagnetic TbCo alloys as a function of magnetic layer compositions and thicknesses. We show that both ferro- and ferrimagnets with high saturation magnetization show AO-HDS if their magnetic thickness is strongly reduced below a material-dependent threshold thickness. By taking into account the demagnetizing energy and the domain wall energy, we are able to define a criterion to predict whether AO-HDS or thermal demagnetization (TD) will be observed. This criterion for the observation of AO-HDS is that the equilibrium size of magnetic domains forming during the cooling process should be larger than the laser spot size. From these results we anticipate that more magnetic materials are expected to show AO-HDS. However, the effect of the optical pulses' helicity is hidden by the formation of small magnetic domains during the cooling process.

  9. Ferrimagnetic Tb-Fe Alloy Thin Films: Composition and Thickness Dependence of Magnetic Properties and All-Optical Switching

    NASA Astrophysics Data System (ADS)

    Hebler, Birgit; Hassdenteufel, Alexander; Reinhardt, Patrick; Karl, Helmut; Albrecht, Manfred

    2016-02-01

    Ferrimagnetic rare earth - transition metal Tb-Fe alloy thin films exhibit a variety of different magnetic properties, which depends strongly on composition and temperature. In this study, first the influence of the film thickness (5 - 85 nm) on the sample magnetic properties was investigated in a wide composition range between 15 at.% and 38 at.% of Tb. From our results, we find that the compensation point, remanent magnetization, and magnetic anisotropy of the Tb-Fe films depend not only on the composition but also on the thickness of the magnetic film up to a critical thickness of about 20-30 nm. Beyond this critical thickness, only slight changes in magnetic properties are observed. This behavior can be attributed to a growth-induced modification of the microstructure of the amorphous films, which affects the short range order. As a result, a more collinear alignment of the distributed magnetic moments of Tb along the out-of-plane direction with film thickness is obtained. This increasing contribution of the Tb sublattice magnetization to the total sample magnetization is equivalent to a sample becoming richer in Tb and can be referred to as an “effective” composition. Furthermore, the possibility of all-optical switching, where the magnetization orientation of Tb-Fe can be reversed solely by circularly polarized laser pulses, was analyzed for a broad range of compositions and film thicknesses and correlated to the underlying magnetic properties.

  10. All-optical switching by Kerr nonlinear prism and its application to of binary-to-gray-to-binary code conversion

    NASA Astrophysics Data System (ADS)

    Chattopadhyay, Tanay; Sarkar, Tamal

    2012-09-01

    Nonlinear optics deals with numerous physical phenomena associated with nonlinear cubic susceptibility. In this paper, we have proposed an all-optical switching principle using Kerr effect considering the passage of optical wave through a prism made of non-linear material like fused silica. The performances of the optical switch as well as its various properties were also done by numerical simulation. Furthermore, we also proposed all-optical binary-to-Gray and Gary-to-binary (radix 2) code convertor circuits by this proposed architecture.

  11. Electrochromic optical switching device

    DOEpatents

    Lampert, C.M.; Visco, S.J.

    1992-08-25

    An electrochromic cell is disclosed which comprises an electrochromic layer, a polymerizable organo-sulfur layer which comprises the counter electrode of the structure, and an ionically conductive electronically insulating material which comprises the separator between the electrodes. In a preferred embodiment, both the separator and the organo-sulfur electrode (in both its charged and uncharged states) are transparent either to visible light or to the entire solar spectrum. An electrochromic device is disclosed which comprises such electrodes and separator encased in glass plates on the inner surface of each of which is formed a transparent electrically conductive film in respective electrical contact with the electrodes which facilitates formation of an external electrical connection or contact to the electrodes of the device to permit electrical connection of the device to an external potential source. 3 figs.

  12. Electrochromic optical switching device

    DOEpatents

    Lampert, Carl M.; Visco, Steven J.

    1992-01-01

    An electrochromic cell is disclosed which comprises an electrochromic layer, a polymerizable organo-sulfur layer which comprises the counter electrode of the structure, and an ionically conductive electronically insulating material which comprises the separator between the electrodes. In a preferred embodiment, both the separator and the organo-sulfur electrode (in both its charged and uncharged states) are transparent either to visible light or to the entire solar spectrum. An electrochromic device is disclosed which comprises such electrodes and separator encased in glass plates on the inner surface of each of which is formed a transparent electrically conductive film in respective electrical contact with the electrodes which facilitates formation of an external electrical connection or contact to the electrodes of the device to permit electrical connection of the device to an external potential source.

  13. Analysis of spectral response of optical switching devices based on chalcogenide bistable fiber Bragg gratings

    NASA Astrophysics Data System (ADS)

    Scholtz, Lubomír.; Müllerová, Jarmila

    2015-01-01

    Fiber Bragg gratings (FBGs) are novel and promising devices for all-optical switching, ADD/DROP multiplexers, AND gates, switches, all-optical memory elements. Optical switching based on optical Kerr effects induced with high pump laser light incident on the FBGs cause the change of spectral characteristics of grating depending on the incident power. In this paper numerical studies of the nonlinear FBGs are presented. Optical switching based on the optical bistability in nonlinear chalcogenide FBGs is investigated. The spectral response of nonlinear FBGs is discussed from theoretical viewpoint. The simulations are based on the nonlinear coupled mode theory.

  14. Resistive Switching Memory Devices Based on Proteins.

    PubMed

    Wang, Hong; Meng, Fanben; Zhu, Bowen; Leow, Wan Ru; Liu, Yaqing; Chen, Xiaodong

    2015-12-01

    Resistive switching memory constitutes a prospective candidate for next-generation data storage devices. Meanwhile, naturally occurring biomaterials are promising building blocks for a new generation of environmentally friendly, biocompatible, and biodegradable electronic devices. Recent progress in using proteins to construct resistive switching memory devices is highlighted. The protein materials selection, device engineering, and mechanism of such protein-based resistive switching memory are discussed in detail. Finally, the critical challenges associated with protein-based resistive switching memory devices are presented, as well as insights into the future development of resistive switching memory based on natural biomaterials. PMID:25753764

  15. Optimal all-optical switching of a microcavity resonance in the telecom range using the electronic Kerr effect.

    PubMed

    Yüce, Emre; Ctistis, Georgios; Claudon, Julien; Gérard, Jean-Michel; Vos, Willem L

    2016-01-11

    We have switched GaAs/AlAs and AlGaAs/AlAs planar microcavities that operate in the "Original" (O) telecom band by exploiting the instantaneous electronic Kerr effect. We observe that the resonance frequency reversibly shifts within one picosecond when the nanostructure is pumped with low-energy photons. We investigate experimentally and theoretically the role of several parameters: the material backbone and its electronic bandgap, the quality factor, and the duration of the switch pulse. The magnitude of the frequency shift is reduced when the backbone of the central λ-layer has a greater electronic bandgap compared to the cavity resonance frequency and the frequency of the pump. This observation is caused by the fact that pumping with photon energies near the bandgap resonantly enhances the switched magnitude. We thus find that cavities operating in the telecom O-band are more amenable to ultrafast Kerr switching than those operating at lower frequencies, such as the C-band. Our results indicate that the large bandgap of AlGaAs/AlAs cavity allows to tune both the pump and the probe to the telecom range to perform Kerr switching without detrimental two-photon absorption. We observe that the magnitude of the resonance frequency shift decreases with increasing quality factor of the cavity. Our model shows that the magnitude of the resonance frequency shift depends on the pump pulse duration and is maximized when the duration matches the cavity storage time to within a factor two. In our experiments, we obtain a maximum shift of the cavity resonance relative to the cavity linewidth of 20%. We project that the shift of the cavity resonance can be increased twofold with a pump pulse duration that better matches the cavity storage time. We provide the essential parameter settings for different materials so that the frequency shift of the cavity resonance can be maximized using the electronic Kerr effect. PMID:26832255

  16. Optimal all-optical switching of a microcavity resonance in the telecom range using the electronic Kerr effect

    NASA Astrophysics Data System (ADS)

    Yüce, Emre; Ctistis, Georgios; Claudon, Julien; Gérard, Jean-Michel; Vos, Willem L.

    2016-01-01

    We have switched GaAs/AlAs and AlGaAs/AlAs planar microcavities that operate in the "Original" (O) telecom band by exploiting the instantaneous electronic Kerr effect. We observe that the resonance frequency reversibly shifts within one picosecond. We investigate experimentally and theoretically the role of several main parameters: the material backbone and its electronic bandgap, the pump power, the quality factor, and the duration of the switch pulse. The magnitude of the shift is reduced when the backbone of the central $\\lambda-$layer has a greater electronic bandgap; pumping with photon energies near the bandgap resonantly enhances the switched magnitude. Our model shows that the magnitude of the resonance frequency shift depends on the pump pulse duration and is maximized when the duration matches the cavity storage time that is set by the quality factor. We provide the settings for the essential parameters so that the frequency shift of the cavity resonance can be increased to one linewidth.

  17. Ability of dynamic holography in self-assembled hybrid nanostructured silica films for all-optical switching and multiplexing

    NASA Astrophysics Data System (ADS)

    Telbiz, German; Bugaychuk, Svitlana; Leonenko, Eugen; Derzhypolska, Liudmyla; Gnatovskyy, Vladimir; Pryadko, Igor

    2015-04-01

    The sol-gel method has been employed in the fabrication of easily processable mesostructured films consisting of a nonionic surfactant and silica as the inorganic component. The ability of the occluded Pluronic P123 mesostructures to solubilize guest molecules made these films ideal host matrices for organic dyes and molecular assemblies, possessing substantial nonlinear susceptibilities. These films were explored for use as the photonic layer in all-optical time-to-space converters and proved successful at increasing the optical response of the intercalated dyes to a point that would make these composite films applicable for use as the photonic layer. Recording of a dynamical grating in a single-pulse regime has been obtained. Since the dynamical grating exhibits the fast relaxation time (up to 10 ns), the nonlinear mechanism represents an electronic excitation of the photosensitive molecules. As far as the dye molecules are distributed in nanoporous silica, a model of `gas of molecular dye' may be rightly used in order to consider nonlinear optical properties in the nanostructured hybrid films. We suppose that further improvement of the nonlinear optical nanomaterials may follow on the way to embed additional inclusions, which will not promote the heat accumulation in the host matrix and will lead to effective dissipation of the heat energy.

  18. Biochemical switching device: how to turn on (off) the switch.

    PubMed

    Okamoto, M; Sakai, T; Hayashi, K

    1989-01-01

    We previously showed with computer simulations that cyclic enzyme systems have the reliability of ON-OFF types of operation (McCulloch-Pitts' neuronic equation) and the applicability for a switching circuit in a biocomputer. The switching time was inevitably determined in accordance with the difference in amount between two inputs of the system. This characteristic is, however, a disadvantage for practical use of a switching device; we need to improve the system in order for the switching time to optionally be changed. We shall present here how to turn on (off) the switch independently of the modes of two inputs. By introducing pulse perturbation, we could optionally set up the switching time of a cyclic enzyme system (biochemical switching device). PMID:2720139

  19. Nanoscale resistive switching devices: mechanisms and modeling

    NASA Astrophysics Data System (ADS)

    Yang, Yuchao; Lu, Wei

    2013-10-01

    Resistive switching devices (also termed memristive devices or memristors) are two-terminal nonlinear dynamic electronic devices that can have broad applications in the fields of nonvolatile memory, reconfigurable logic, analog circuits, and neuromorphic computing. Current rapid advances in memristive devices in turn demand better understanding of the switching mechanism and the development of physics-based as well as simplified device models to guide future device designs and circuit-level applications. In this article, we review the physical processes behind resistive switching (memristive) phenomena and discuss the experimental and modeling efforts to explain these effects. In this article three categories of devices, in which the resistive switching effects are driven by cation migration, anion migration, and electronic effects, will be discussed. The fundamental driving forces and the stochastic nature of resistive switching will also be discussed.

  20. Nanoscale resistive switching devices: mechanisms and modeling.

    PubMed

    Yang, Yuchao; Lu, Wei

    2013-11-01

    Resistive switching devices (also termed memristive devices or memristors) are two-terminal nonlinear dynamic electronic devices that can have broad applications in the fields of nonvolatile memory, reconfigurable logic, analog circuits, and neuromorphic computing. Current rapid advances in memristive devices in turn demand better understanding of the switching mechanism and the development of physics-based as well as simplified device models to guide future device designs and circuit-level applications. In this article, we review the physical processes behind resistive switching (memristive) phenomena and discuss the experimental and modeling efforts to explain these effects. In this article three categories of devices, in which the resistive switching effects are driven by cation migration, anion migration, and electronic effects, will be discussed. The fundamental driving forces and the stochastic nature of resistive switching will also be discussed. PMID:24057010

  1. Optically controlled waveplate at a telecom wavelength using a ladder transition in Rb atoms for all-optical switching and high speed Stokesmetric imaging.

    PubMed

    Krishnamurthy, Subramanian; Tu, Y; Wang, Y; Tseng, S; Shahriar, M S

    2014-11-17

    We demonstrate an optically controlled waveplate at ~1323 nm using the 5S(1/2)-5P(1/2)-6S(1/2) ladder transition in a Rb vapor cell. The lower leg of the transitions represents the control beam, while the upper leg represents the signal beam. We show that we can place the signal beam in any arbitrary polarization state with a suitable choice of polarization of the control beam. Specifically, we demonstrate a differential phase retardance of ~180 degrees between the two circularly polarized components of a linearly polarized signal beam. We also demonstrate that the system can act as a Quarter Wave plate. The optical activity responsible for the phase retardation process is explained in terms of selection rules involving the Zeeman sublevels. As such, the system can be used to realize a fast Stokesmetric imaging system with a speed of ~3 MHz. When implemented using a tapered nano fiber embedded in a vapor cell, this system can be used to realize an ultra-low power all-optical switch as well as a Quantum Zeno Effect based all-optical logic gate by combining it with an optically controlled polarizer, previously demonstrated by us. We present numerical simulations of the system using a comprehensive model which incorporates all the relevant Zeeman sub-levels in the system, using a novel algorithm recently developed by us for efficient computation of the evolution of an arbitrary large scale quantum system. PMID:25402129

  2. Emergence of electron coherence and two-color all-optical switching in MoS2 based on spatial self-phase modulation

    PubMed Central

    Wu, Yanling; Wu, Qiong; Sun, Fei; Cheng, Cai; Meng, Sheng; Zhao, Jimin

    2015-01-01

    Generating electron coherence in quantum materials is essential in optimal control of many-body interactions and correlations. In a multidomain system this signifies nonlocal coherence and emergence of collective phenomena, particularly in layered 2D quantum materials possessing novel electronic structures and high carrier mobilities. Here we report nonlocal ac electron coherence induced in dispersed MoS2 flake domains, using coherent spatial self-phase modulation (SSPM). The gap-dependent nonlinear dielectric susceptibility χ(3) measured is surprisingly large, where direct interband transition and two-photon SSPM are responsible for excitations above and below the bandgap, respectively. A wind-chime model is proposed to account for the emergence of the ac electron coherence. Furthermore, all-optical switching is achieved based on SSPM, especially with two-color intraband coherence, demonstrating that electron coherence generation is a ubiquitous property of layered quantum materials. PMID:26351696

  3. All-optical switching of localized surface plasmon resonance in single gold nanosandwich using GeSbTe film as an active medium

    SciTech Connect

    Hira, T.; Homma, T.; Uchiyama, T.; Kuwamura, K.; Kihara, Y.; Saiki, T.

    2015-01-19

    Localized surface plasmon resonance (LSPR) switching was investigated in a Au/GeSbTe/Au nanosandwich as a key active element for plasmonic integrated circuits and devices. Near-infrared single-particle spectroscopy was conducted to examine the interaction of a Au nanorod (AuNR) and Au film, between which a GeSbTe layer was incorporated as an active phase-change media. Numerical calculation revealed that hybridized modes of the AuNR and Au film exhibit a significant change of scattering intensity with the phase change. In particular, the antisymmetric (magnetic resonance) mode can be modulated effectively by the extinction coefficient of GST, as well as its refractive index. Experimental demonstration of the switching operation was performed by alternate irradiation with a picosecond pulsed laser for amorphization and a continuous wave laser for crystallization. Repeatable modulation was obtained by monitoring the scattering light around the LSPR peak at λ = 1070 nm.

  4. All-optical switching of localized surface plasmon resonance in single gold nanosandwich using GeSbTe film as an active medium

    NASA Astrophysics Data System (ADS)

    Hira, T.; Homma, T.; Uchiyama, T.; Kuwamura, K.; Kihara, Y.; Saiki, T.

    2015-01-01

    Localized surface plasmon resonance (LSPR) switching was investigated in a Au/GeSbTe/Au nanosandwich as a key active element for plasmonic integrated circuits and devices. Near-infrared single-particle spectroscopy was conducted to examine the interaction of a Au nanorod (AuNR) and Au film, between which a GeSbTe layer was incorporated as an active phase-change media. Numerical calculation revealed that hybridized modes of the AuNR and Au film exhibit a significant change of scattering intensity with the phase change. In particular, the antisymmetric (magnetic resonance) mode can be modulated effectively by the extinction coefficient of GST, as well as its refractive index. Experimental demonstration of the switching operation was performed by alternate irradiation with a picosecond pulsed laser for amorphization and a continuous wave laser for crystallization. Repeatable modulation was obtained by monitoring the scattering light around the LSPR peak at λ = 1070 nm.

  5. A sub-1-volt nanoelectromechanical switching device

    NASA Astrophysics Data System (ADS)

    Lee, Jeong Oen; Song, Yong-Ha; Kim, Min-Wu; Kang, Min-Ho; Oh, Jae-Sub; Yang, Hyun-Ho; Yoon, Jun-Bo

    2013-01-01

    Nanoelectromechanical (NEM) switches have received widespread attention as promising candidates in the drive to surmount the physical limitations currently faced by complementary metal oxide semiconductor technology. The NEM switch has demonstrated superior characteristics including quasi-zero leakage behaviour, excellent density capability and operation in harsh environments. However, an unacceptably high operating voltage (4-20 V) has posed a major obstacle in the practical use of the NEM switch in low-power integrated circuits. To utilize the NEM switch widely as a core device component in ultralow power applications, the operation voltage needs to be reduced to 1 V or below. However, sub-1 V actuation has not yet been demonstrated because of fabrication difficulties and irreversible switching failure caused by surface adhesion. Here, we report the sub-1 V operation of a NEM switch through the introduction of a novel pipe clip device structure and an effective air gap fabrication technique. This achievement is primarily attributed to the incorporation of a 4-nm-thick air gap, which is the smallest reported so far for a NEM switch generated using a `top-down' approach. Our structure and process can potentially be utilized in various nanogap-related applications, including NEM switch-based ultralow-power integrated circuits, NEM resonators, nanogap electrodes for scientific research and sensors.

  6. Intrinsic and extrinsic switching in molecular devices

    NASA Astrophysics Data System (ADS)

    van der Molen, Sense Jan; Trouwborst, Marius L.

    2015-01-01

    The details of metal-molecule coupling play a pivotal role in the functionality of molecular junctions. Molecules that have intrinsic switchable properties may lose this capability after coupling to electrodes. On the other hand, connecting passive molecules to electrodes may lead to a switchable molecular device ('extrinsic switching'). Here, we first discuss this general matter, and then focus on two specific cases, one of intrinsic switching (for photochromic diarylethenes) and one of extrinsic switching (for hydrogen molecules) in gold-molecule-gold structures.

  7. All-optical analog comparator.

    PubMed

    Li, Pu; Yi, Xiaogang; Liu, Xianglian; Zhao, Dongliang; Zhao, Yongpeng; Wang, Yuncai

    2016-01-01

    An analog comparator is one of the core units in all-optical analog-to-digital conversion (AO-ADC) systems, which digitizes different amplitude levels into two levels of logical '1' or '0' by comparing with a defined decision threshold. Although various outstanding photonic ADC approaches have been reported, almost all of them necessitate an electrical comparator to carry out this binarization. The use of an electrical comparator is in contradiction to the aim of developing all-optical devices. In this work, we propose a new concept of an all-optical analog comparator and numerically demonstrate an implementation based on a quarter-wavelength-shifted distributed feedback laser diode (QWS DFB-LD) with multiple quantum well (MQW) structures. Our results show that the all-optical comparator is very well suited for true AO-ADCs, enabling the whole digital conversion from an analog optical signal (continuous-time signal or discrete pulse signal) to a binary representation totally in the optical domain. In particular, this all-optical analog comparator possesses a low threshold power (several mW), high extinction ratio (up to 40 dB), fast operation rate (of the order of tens of Gb/s) and a step-like transfer function. PMID:27550874

  8. All-optical analog comparator

    PubMed Central

    Li, Pu; Yi, Xiaogang; Liu, Xianglian; Zhao, Dongliang; Zhao, Yongpeng; Wang, Yuncai

    2016-01-01

    An analog comparator is one of the core units in all-optical analog-to-digital conversion (AO-ADC) systems, which digitizes different amplitude levels into two levels of logical ‘1’ or ‘0’ by comparing with a defined decision threshold. Although various outstanding photonic ADC approaches have been reported, almost all of them necessitate an electrical comparator to carry out this binarization. The use of an electrical comparator is in contradiction to the aim of developing all-optical devices. In this work, we propose a new concept of an all-optical analog comparator and numerically demonstrate an implementation based on a quarter-wavelength-shifted distributed feedback laser diode (QWS DFB-LD) with multiple quantum well (MQW) structures. Our results show that the all-optical comparator is very well suited for true AO-ADCs, enabling the whole digital conversion from an analog optical signal (continuous-time signal or discrete pulse signal) to a binary representation totally in the optical domain. In particular, this all-optical analog comparator possesses a low threshold power (several mW), high extinction ratio (up to 40 dB), fast operation rate (of the order of tens of Gb/s) and a step-like transfer function. PMID:27550874

  9. High speed all optical networks

    NASA Technical Reports Server (NTRS)

    Chlamtac, Imrich; Ganz, Aura

    1990-01-01

    An inherent problem of conventional point-to-point wide area network (WAN) architectures is that they cannot translate optical transmission bandwidth into comparable user available throughput due to the limiting electronic processing speed of the switching nodes. The first solution to wavelength division multiplexing (WDM) based WAN networks that overcomes this limitation is presented. The proposed Lightnet architecture takes into account the idiosyncrasies of WDM switching/transmission leading to an efficient and pragmatic solution. The Lightnet architecture trades the ample WDM bandwidth for a reduction in the number of processing stages and a simplification of each switching stage, leading to drastically increased effective network throughputs. The principle of the Lightnet architecture is the construction and use of virtual topology networks, embedded in the original network in the wavelength domain. For this construction Lightnets utilize the new concept of lightpaths which constitute the links of the virtual topology. Lightpaths are all-optical, multihop, paths in the network that allow data to be switched through intermediate nodes using high throughput passive optical switches. The use of the virtual topologies and the associated switching design introduce a number of new ideas, which are discussed in detail.

  10. 46 CFR 169.681 - Disconnect switches and devices.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 46 Shipping 7 2010-10-01 2010-10-01 false Disconnect switches and devices. 169.681 Section 169.681... Less Than 100 Gross Tons § 169.681 Disconnect switches and devices. (a) Externally operable switches or... supplies, means must be provided for locking the disconnect device in the “open” position. (c) For...

  11. Ultrafast all-optical switching and error-free 10 Gbit/s wavelength conversion in hybrid InP-silicon on insulator nanocavities using surface quantum wells

    SciTech Connect

    Bazin, Alexandre; Monnier, Paul; Beaudoin, Grégoire; Sagnes, Isabelle; Raj, Rama; Lenglé, Kevin; Gay, Mathilde; Bramerie, Laurent; Braive, Rémy; Raineri, Fabrice

    2014-01-06

    Ultrafast switching with low energies is demonstrated using InP photonic crystal nanocavities embedding InGaAs surface quantum wells heterogeneously integrated to a silicon on insulator waveguide circuitry. Thanks to the engineered enhancement of surface non radiative recombination of carriers, switching time is obtained to be as fast as 10 ps. These hybrid nanostructures are shown to be capable of achieving systems level performance by demonstrating error free wavelength conversion at 10 Gbit/s with 6 mW switching powers.

  12. Dimensioning of 10 Gbit/s all-optical packet switched networks based on optical label swapping routers with multistage 2R regeneration.

    PubMed

    Puerto, G; Ortega, B; Manzanedo, M D; Martínez, A; Pastor, D; Capmany, J; Kovacs, G

    2006-10-30

    This paper describes both the experimental and theoretical investigations on the cascadability of all-optical routers in optical label swapping networks incorporating a multistage wavelength conversion with 2R regeneration. A full description of a novel experimental setup allows the packet by packet measurement up to 16 hops with 10 Gb/s payload showing 1 dB penalty with 10(-12) bit error rate. Similarly, the simulations on the system allow a prediction on the cascadability of the router up to 64 hops. PMID:19529426

  13. All-optical flip-flop and control methods thereof

    DOEpatents

    Maywar, Drew; Agrawal, Govind P.

    2010-03-23

    Embodiments of the invention pertain to remote optical control of holding beam-type, optical flip-flop devices, as well as to the devices themselves. All-optical SET and RE-SET control signals operate on a cw holding beam in a remote manner to vary the power of the holding beam between threshold switching values to enable flip-flop operation. Cross-gain modulation and cross-polarization modulation processes can be used to change the power of the holding beam.

  14. Spark gap device for precise switching

    DOEpatents

    Boettcher, G.E.

    1984-10-02

    A spark gap device for precise switching of an energy storage capacitor into an exploding bridge wire load is disclosed. Niobium electrodes having a melting point of 2,415 degrees centigrade are spaced apart by an insulating cylinder to define a spark gap. The electrodes are supported by conductive end caps which, together with the insulating cylinder, form a hermetically sealed chamber filled with an inert, ionizable gas, such as pure xenon. A quantity of solid radioactive carbon-14 within the chamber adjacent the spark gap serves as a radiation stabilizer. The sides of the electrodes and the inner wall of the insulating cylinder are spaced apart a sufficient distance to prevent unwanted breakdown initiation. A conductive sleeve may envelop the outside of the insulating member from the midpoint of the spark gap to the cap adjacent the cathode. The outer metallic surfaces of the device may be coated with a hydrogen-impermeable coating to lengthen the shelf life and operating life of the device. The device breaks down at about 1,700 volts for input voltage rates up to 570 volts/millisecond and allows peak discharge currents of up to 3,000 amperes from a 0.3 microfarad energy storage capacitor for more than 1,000 operations. 3 figs.

  15. Spark gap device for precise switching

    DOEpatents

    Boettcher, Gordon E.

    1984-01-01

    A spark gap device for precise switching of an energy storage capacitor into an exploding bridge wire load is disclosed. Niobium electrodes having a melting point of 2,415 degrees centrigrade are spaced apart by an insulating cylinder to define a spark gap. The electrodes are supported by conductive end caps which, together with the insulating cylinder, form a hermetically sealed chamber filled with an inert, ionizable gas, such as pure xenon. A quantity of solid radioactive carbon-14 within the chamber adjacent the spark gap serves as a radiation stabilizer. The sides of the electrodes and the inner wall of the insulating cylinder are spaced apart a sufficient distance to prevent unwanted breakdown initiation. A conductive sleeve may envelop the outside of the insulating member from the midpoint of the spark gap to the cap adjacent the cathode. The outer metallic surfaces of the device may be coated with a hydrogen-impermeable coating to lengthen the shelf life and operating life of the device. The device breaks down at about 1,700 volts for input voltage rates up to 570 volts/millisecond and allows peak discharge currents of up to 3,000 amperes from a 0.3 microfarad energy storage capacitor for more than 1,000 operations.

  16. Electrocaloric devices based on thini-film heat switches

    SciTech Connect

    Epstein, Richard I; Malloy, Kevin J

    2009-01-01

    We describe a new approach to refrigeration and electrical generation that exploits the attractive properties of thin films of electrocaloric materials. Layers of electrocaloric material coupled with thin-film heat switches can work as either refrigerators or electrical generators, depending on the phasing of the applied voltages and heat switching. With heat switches based on thin layers of liquid crystals, the efficiency of these thin-film heat engines can be at least as high as that of current thermoelectric devices. Advanced heat switches would enable thin-film heat engines to outperform conventional vaporcompression devices.

  17. Switching mechanism in two-terminal vanadium dioxide devices.

    PubMed

    Radu, Iuliana P; Govoreanu, B; Mertens, S; Shi, X; Cantoro, M; Schaekers, M; Jurczak, M; De Gendt, S; Stesmans, A; Kittl, J A; Heyns, M; Martens, K

    2015-04-24

    Two-terminal thin film VO2 devices show an abrupt decrease of resistance when the current or voltage applied exceeds a threshold value. This phenomenon is often described as a field-induced metal-insulator transition. We fabricate nano-scale devices with different electrode separations down to 100 nm and study how the dc switching voltage and current depend on device size and temperature. Our observations are consistent with a Joule heating mechanism governing the switching. Pulsed measurements show a switching time to the high resistance state of the order of one hundred nanoseconds, consistent with heat dissipation time. In spite of the Joule heating mechanism which is expected to induce device degradation, devices can be switched for more than 10(10) cycles making VO2 a promising material for nanoelectronic applications. PMID:25815433

  18. Adaptive restoration of a partially coherent blurred image using an all-optical feedback interferometer with a liquid-crystal device.

    PubMed

    Shirai, Tomohiro; Barnes, Thomas H

    2002-02-01

    A liquid-crystal adaptive optics system using all-optical feedback interferometry is applied to partially coherent imaging through a phase disturbance. A theoretical analysis based on the propagation of the cross-spectral density shows that the blurred image due to the phase disturbance can be restored, in principle, irrespective of the state of coherence of the light illuminating the object. Experimental verification of the theory has been performed for two cases when the object to be imaged is illuminated by spatially coherent light originating from a He-Ne laser and by spatially incoherent white light from a halogen lamp. We observed in both cases that images blurred by the phase disturbance were successfully restored, in agreement with the theory, immediately after the adaptive optics system was activated. The origin of the deviation of the experimental results from the theory, together with the effect of the feedback misalignment inherent in our optical arrangement, is also discussed. PMID:11822600

  19. All optical OFDM transmission systems

    NASA Astrophysics Data System (ADS)

    Rhee, June-Koo K.; Lim, Seong-Jin; Kserawi, Malaz

    2011-12-01

    All-optical OFDM data transmission opens up a new realm of advanced optical transmission at extreme data rates, as subcarriers are multiplexed and demultiplexed by all optical discrete Fourier transforms (DFT). This paper reviews the principles of all optical OFDM transmission and its system application techniques, providing the generic ideas and the practical implementation issues to achieve 100Gbps or higher data rates with a spectral efficiency of 1 bps/Hz or better. This paper also include discussions on all-optical OFDM implementation variants such as an AWG-based OFDM multiplexer and demultiplexer, a receiver design without optical sampling, a transmitter design with frequency-locked cw lasers, an OFDM cyclic prefix designs, and a chromatic dispersion mitigation technique.

  20. Resistive switching characteristics and mechanisms in silicon oxide memory devices

    NASA Astrophysics Data System (ADS)

    Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Zhou, Fei; Wu, Xiaohan; Chen, Yen-Ting; Wang, Yanzhen; Xue, Fei; Lee, Jack C.

    2016-05-01

    Intrinsic unipolar SiOx-based resistance random access memories (ReRAM) characterization, switching mechanisms, and applications have been investigated. Device structures, material compositions, and electrical characteristics are identified that enable ReRAM cells with high ON/OFF ratio, low static power consumption, low switching power, and high readout-margin using complementary metal-oxide semiconductor transistor (CMOS)-compatible SiOx-based materials. These ideas are combined with the use of horizontal and vertical device structure designs, composition optimization, electrical control, and external factors to help understand resistive switching (RS) mechanisms. Measured temperature effects, pulse response, and carrier transport behaviors lead to compact models of RS mechanisms and energy band diagrams in order to aid the development of computer-aided design for ultralarge-v scale integration. This chapter presents a comprehensive investigation of SiOx-based RS characteristics and mechanisms for the post-CMOS device era.

  1. All-optical symmetric ternary logic gate

    NASA Astrophysics Data System (ADS)

    Chattopadhyay, Tanay

    2010-09-01

    Symmetric ternary number (radix=3) has three logical states (1¯, 0, 1). It is very much useful in carry free arithmetical operation. Beside this, the logical operation using this type of number system is also effective in high speed computation and communication in multi-valued logic. In this literature all-optical circuits for three basic symmetrical ternary logical operations (inversion, MIN and MAX) are proposed and described. Numerical simulation verifies the theoretical model. In this present scheme the different ternary logical states are represented by different polarized state of light. Terahertz optical asymmetric demultiplexer (TOAD) based interferometric switch has been used categorically in this manuscript.

  2. All-optical universal logic gates on nonlinear multimode interference coupler using tunable input intensity

    NASA Astrophysics Data System (ADS)

    Tajaldini, Mehdi; Jafri, Mohd Zubir Mat

    2015-04-01

    The theory of Nonlinear Modal Propagation Analysis Method (NMPA) have shown significant features of nonlinear multimode interference (MMI) coupler with compact dimension and when launched near the threshold of nonlinearity. Moreover, NMPA have the potential to allow studying the nonlinear MMI based the modal interference to explorer the phenomenon that what happen due to the natural of multimode region. Proposal of all-optical switch based NMPA has approved its capability to achieving the all-optical gates. All-optical gates have attracted increasing attention due to their practical utility in all-optical signal processing networks and systems. Nonlinear multimode interference devices could apply as universal all-optical gates due to significant features that NMPA introduce them. In this Paper, we present a novel Ultra-compact MMI coupler based on NMPA method in low intensity compared to last reports either as a novel design method and potential application for optical NAND, NOR as universal gates on single structure for Boolean logic signal processing devices and optimize their application via studding the contrast ratio between ON and OFF as a function of output width. We have applied NMPA for several applications so that the miniaturization in low nonlinear intensities is their main purpose.

  3. Device having two optical ports for switching applications

    DOEpatents

    Rosen, Ayre; Stabile, Paul J.

    1991-09-24

    A two-sided light-activatable semiconductor switch device having an optical port on each side thereof. The semiconductor device may be a p-i-n diode or of bulk intrinsic material. A two ported p-i-n diode, reverse-biased to "off" by a 1.3 kV dc power supply, conducted 192 A when activated by two 1 kW laser diode arrays, one for each optical port.

  4. Sericin for resistance switching device with multilevel nonvolatile memory.

    PubMed

    Wang, Hong; Meng, Fanben; Cai, Yurong; Zheng, Liyan; Li, Yuangang; Liu, Yuanjun; Jiang, Yueyue; Wang, Xiaotian; Chen, Xiaodong

    2013-10-11

    Resistance switching characteristics of natural sericin protein film is demonstrated for nonvolatile memory application for the first time. Excellent memory characteristics with a resistance OFF/ON ratio larger than 10(6) have been obtained and a multilevel memory based on sericin has been achieved. The environmentally friendly high performance biomaterial based memory devices may hold a place in the future of electronic device development. PMID:23893500

  5. Focus ion beam-induced mechanical stress switching in an ultra-fast resistive switching device

    NASA Astrophysics Data System (ADS)

    Yang, Xiang

    2016-06-01

    The Mo/Si3N4:Pt/Pt nanometallic resistive switching devices with ultra-fast write/erase speed (<50 ns) were fabricated. Other than conventional electrical switching, a mechanical stress-induced switching was demonstrated. Such mechanical stress was provided by momentum transfer of 30 keV Ga+ ions in a focus ion beam system, enabling a one-way high resistance state (HRS) to low resistance state (LRS) transition. The capability of mechanical stress switching provides evidence that electron trapping/detrapping mechanism is responsible for nanometallic resistive switching. It was further demonstrated that HRS (trapping state) is a meta-stable state, while LRS (detrapping state) is a stable state. Strong mechanical stress facilitates local bond distortion in dielectric films and thus lowers the energy barrier between HRS and LRS, eventually leading to a barrier-less state transition. A quantitative model based on stress-mediated parallel conduction paths were established to provide a more accurate description of the resistive switching devices.

  6. Rapidly reconfigurable all-optical universal logic gate

    DOEpatents

    Goddard, Lynford L.; Bond, Tiziana C.; Kallman, Jeffrey S.

    2010-09-07

    A new reconfigurable cascadable all-optical on-chip device is presented. The gate operates by combining the Vernier effect with a novel effect, the gain-index lever, to help shift the dominant lasing mode from a mode where the laser light is output at one facet to a mode where it is output at the other facet. Since the laser remains above threshold, the speed of the gate for logic operations as well as for reprogramming the function of the gate is primarily limited to the small signal optical modulation speed of the laser, which can be on the order of up to about tens of GHz. The gate can be rapidly and repeatedly reprogrammed to perform any of the basic digital logic operations by using an appropriate analog optical or electrical signal at the gate selection port. Other all-optical functionality includes wavelength conversion, signal duplication, threshold switching, analog to digital conversion, digital to analog conversion, signal routing, and environment sensing. Since each gate can perform different operations, the functionality of such a cascaded circuit grows exponentially.

  7. Magneto-optical switching devices based on Si resonators

    NASA Astrophysics Data System (ADS)

    Noda, Kazuki; Okada, Kazuya; Amemiya, Yoshiteru; Yokoyama, Shin

    2016-04-01

    The magneto-optical switching devices based on Si ring and Si photonic crystal resonators have been fabricated using a Bi3Fe5O12 (BIG) film deposited by the metal organic decomposition (MOD) method. The quality of the obtained BIG film was evaluated by X-ray diffraction and the magneto-optical Kerr effect and relatively good results were obtained. The light modulations of both devices were ≦20% at a wavelength of ˜1.5 µm. The operation mechanisms of both devices are explained by the Cotton-Mouton effect where the magnetic field direction is perpendicular to the light propagation direction.

  8. Optically controlled multiple switching operations of DNA biopolymer devices

    NASA Astrophysics Data System (ADS)

    Hung, Chao-You; Tu, Waan-Ting; Lin, Yi-Tzu; Fruk, Ljiljana; Hung, Yu-Chueh

    2015-12-01

    We present optically tunable operations of deoxyribonucleic acid (DNA) biopolymer devices, where a single high-resistance state, write-once read-many-times memory state, write-read-erase memory state, and single low-resistance state can be achieved by controlling UV irradiation time. The device is a simple sandwich structure with a spin-coated DNA biopolymer layer sandwiched by two electrodes. Upon irradiation, the electrical properties of the device are adjusted owing to a phototriggered synthesis of silver nanoparticles in DNA biopolymer, giving rise to multiple switching scenarios. This technique, distinct from the strategy of doping of pre-formed nanoparticles, enables a post-film fabrication process for achieving optically controlled memory device operations, which provides a more versatile platform to fabricate organic memory and optoelectronic devices.

  9. Optically controlled multiple switching operations of DNA biopolymer devices

    SciTech Connect

    Hung, Chao-You; Tu, Waan-Ting; Lin, Yi-Tzu; Fruk, Ljiljana; Hung, Yu-Chueh

    2015-12-21

    We present optically tunable operations of deoxyribonucleic acid (DNA) biopolymer devices, where a single high-resistance state, write-once read-many-times memory state, write-read-erase memory state, and single low-resistance state can be achieved by controlling UV irradiation time. The device is a simple sandwich structure with a spin-coated DNA biopolymer layer sandwiched by two electrodes. Upon irradiation, the electrical properties of the device are adjusted owing to a phototriggered synthesis of silver nanoparticles in DNA biopolymer, giving rise to multiple switching scenarios. This technique, distinct from the strategy of doping of pre-formed nanoparticles, enables a post-film fabrication process for achieving optically controlled memory device operations, which provides a more versatile platform to fabricate organic memory and optoelectronic devices.

  10. Design of a fully compliant bistable micromechanism for switching devices

    NASA Astrophysics Data System (ADS)

    Chang, Hsin-An; Tsay, Jinni; Sung, Cheng-Kuo

    2001-11-01

    This paper proposes a design of a bistable micromechanism for the application of switching devices. The topology of a fully compliant four-bar mechanism is adopted herein. The central mass of the mechanism is employed as a carriage to carry switching components, such as mirror, electrical contact, etc. The equations that predict the existence of bistable states, the extreme positions of the motion range and the maximum stress states of members were derived. MUMPs provided by Cronos Integrated Microsystems fabricated the proposed micromechanisms for the purpose of verifying the theoretical predictions. Finally, an experimental rig was established. The bistable mechanisms were switched either by the probe or actuators to push the central mass. The experimental results demonstrated that the motions observed approximately met the predicted values.

  11. Electrical switching in a Fe-thiacrown molecular device

    SciTech Connect

    Lan, J.; Zheng, X. H. Hao, H.; Wang, X. L.; Shi, X. Q.; Zeng, Z.

    2014-01-07

    First-principles calculations are performed to inspect the electronic and transport properties of a Fe-thiacrown molecular device, namely, a Au-Fe(9S{sub 3}){sub 2}-Au junction. It is found that the junction has a low-spin (LS) ground state and a high-spin (HS) metastable state. Further study shows that the HS state is a conducting state while the LS state is a nearly insulating one, which means that a switch between these two spin configurations results in a good electrical switching behavior and can serve as an ON/OFF state for a logic unit. Thus, it may find applications as switches or memories in molecular electronic circuits.

  12. Electro-optical switching and memory display device

    DOEpatents

    Skotheim, Terje A.; O'Grady, William E.; Linkous, Clovis A.

    1986-01-01

    An electro-optical display device having a housing with wall means including one transparent wall and at least one other wall. Counter electrodes are positioned on the transparent wall and display electrodes are positioned on the other wall with both electrodes in electrically conductive relationship with an electrolyte. Circuit means are connected to the display and counter electrodes to apply different predetermined control potentials between them. The display electrodes are covered with a thin electrically conductive polymer film that is characterized according to the invention by having embedded in it pigment molecules as counter ions. The display device is operable to be switched to a plurality of different visual color states at an exceptionally rapid switching rate while each of the color states is characterized by possessing good color intensity and definition.

  13. Electro-optical switching and memory display device

    DOEpatents

    Skotheim, T.A.; O'Grady, W.E.; Linkous, C.A.

    1983-12-29

    An electro-optical display device having a housing with wall means including one transparent wall and at least one other wall. Counter electrodes are positioned on the transparent wall and display electrodes are positioned on the other wall with both electrodes in electrically conductive relationship with an electrolyte. Circuits means are connected to the display and counter electrodes to apply different predetermined control potentials between them. The display electrodes are covered with a thin electrically conductive polymer film that is characterized according to the invention by having embedded in it pigment molecules as counter ions. The display device is operable to be switched to a plurality of different visual color states at an exceptionally rapid switching rate while each of the color states is characterized by possessing good color intensity and definition.

  14. Proposed new approach to design all optical AND gate using plasmonic based Mach-Zehnder interferometer for high speed communication

    NASA Astrophysics Data System (ADS)

    Kumar, Santosh; Singh, Lokendra

    2016-04-01

    The limitation of conventional electronics is mitigated by all optical integrated circuits which have potential of high speed computing and information processing. In this work, an all optical AND gate using optical Kerr effect and optical bistability of a plasmonic based Mach-Zehnder interferometer (MZI) is proposed. An MZI is capable for switching of light according to the intensities of optical input signal. The paper constitutes with mathematical formulation of device and its study is verified using finite difference time domain (FDTD) method.

  15. All-optical transistor- and diode-action and logic gates based on anisotropic nonlinear responsive liquid crystal

    PubMed Central

    Wang, Cheng-Yu; Chen, Chun-Wei; Jau, Hung-Chang; Li, Cheng-Chang; Cheng, Chiao-Yu; Wang, Chun-Ta; Leng, Shi-Ee; Khoo, Iam-Choon; Lin, Tsung-Hsien

    2016-01-01

    In this paper, we show that anisotropic photosensitive nematic liquid crystals (PNLC) made by incorporating anisotropic absorbing dyes are promising candidates for constructing all-optical elements by virtue of the extraordinarily large optical nonlinearity of the nematic host. In particular, we have demonstrated several room-temperature ‘prototype’ PNLC-based all-optical devices such as optical diode, optical transistor and all primary logic gate operations (OR, AND, NOT) based on such optical transistor. Owing to the anisotropic absorption property and the optical activity of the twist alignment nematic cell, spatially non-reciprocal transmission response can be obtained within a sizeable optical isolation region of ~210 mW. Exploiting the same mechanisms, a tri-terminal configuration as an all-optical analogue of a bipolar junction transistor is fabricated. Its ability to be switched by an optical field enables us to realize an all-optical transistor and demonstrate cascadability, signal fan-out, logic restoration, and various logical gate operations such as OR, AND and NOT. Due to the possibility of synthesizing anisotropic dyes and wide ranging choice of liquid crystals nonlinear optical mechanisms, these all-optical operations can be optimized to have much lower thresholds and faster response speeds. The demonstrated capabilities of these devices have shown great potential in all-optical control system and photonic integrated circuits. PMID:27491391

  16. All-optical transistor- and diode-action and logic gates based on anisotropic nonlinear responsive liquid crystal

    NASA Astrophysics Data System (ADS)

    Wang, Cheng-Yu; Chen, Chun-Wei; Jau, Hung-Chang; Li, Cheng-Chang; Cheng, Chiao-Yu; Wang, Chun-Ta; Leng, Shi-Ee; Khoo, Iam-Choon; Lin, Tsung-Hsien

    2016-08-01

    In this paper, we show that anisotropic photosensitive nematic liquid crystals (PNLC) made by incorporating anisotropic absorbing dyes are promising candidates for constructing all-optical elements by virtue of the extraordinarily large optical nonlinearity of the nematic host. In particular, we have demonstrated several room-temperature ‘prototype’ PNLC-based all-optical devices such as optical diode, optical transistor and all primary logic gate operations (OR, AND, NOT) based on such optical transistor. Owing to the anisotropic absorption property and the optical activity of the twist alignment nematic cell, spatially non-reciprocal transmission response can be obtained within a sizeable optical isolation region of ~210 mW. Exploiting the same mechanisms, a tri-terminal configuration as an all-optical analogue of a bipolar junction transistor is fabricated. Its ability to be switched by an optical field enables us to realize an all-optical transistor and demonstrate cascadability, signal fan-out, logic restoration, and various logical gate operations such as OR, AND and NOT. Due to the possibility of synthesizing anisotropic dyes and wide ranging choice of liquid crystals nonlinear optical mechanisms, these all-optical operations can be optimized to have much lower thresholds and faster response speeds. The demonstrated capabilities of these devices have shown great potential in all-optical control system and photonic integrated circuits.

  17. All-optical transistor- and diode-action and logic gates based on anisotropic nonlinear responsive liquid crystal.

    PubMed

    Wang, Cheng-Yu; Chen, Chun-Wei; Jau, Hung-Chang; Li, Cheng-Chang; Cheng, Chiao-Yu; Wang, Chun-Ta; Leng, Shi-Ee; Khoo, Iam-Choon; Lin, Tsung-Hsien

    2016-01-01

    In this paper, we show that anisotropic photosensitive nematic liquid crystals (PNLC) made by incorporating anisotropic absorbing dyes are promising candidates for constructing all-optical elements by virtue of the extraordinarily large optical nonlinearity of the nematic host. In particular, we have demonstrated several room-temperature 'prototype' PNLC-based all-optical devices such as optical diode, optical transistor and all primary logic gate operations (OR, AND, NOT) based on such optical transistor. Owing to the anisotropic absorption property and the optical activity of the twist alignment nematic cell, spatially non-reciprocal transmission response can be obtained within a sizeable optical isolation region of ~210 mW. Exploiting the same mechanisms, a tri-terminal configuration as an all-optical analogue of a bipolar junction transistor is fabricated. Its ability to be switched by an optical field enables us to realize an all-optical transistor and demonstrate cascadability, signal fan-out, logic restoration, and various logical gate operations such as OR, AND and NOT. Due to the possibility of synthesizing anisotropic dyes and wide ranging choice of liquid crystals nonlinear optical mechanisms, these all-optical operations can be optimized to have much lower thresholds and faster response speeds. The demonstrated capabilities of these devices have shown great potential in all-optical control system and photonic integrated circuits. PMID:27491391

  18. Materials growth and characterization of thermoelectric and resistive switching devices

    NASA Astrophysics Data System (ADS)

    Norris, Kate J.

    In the 74 years since diode rectifier based radar technology helped the allied forces win WWII, semiconductors have transformed the world we live in. From our smart phones to semiconductor-based energy conversion, semiconductors touch every aspect of our lives. With this thesis I hope to expand human knowledge of semiconductor thermoelectric devices and resistive switching devices through experimentation with materials growth and subsequent materials characterization. Metal organic chemical vapor deposition (MOCVD) was the primary method of materials growth utilized in these studies. Additionally, plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD),ion beam sputter deposition, reactive sputter deposition and electron-beam (e-beam) evaporation were also used in this research for device fabrication. Scanning electron microscopy (SEM), Transmission electron microscopy (TEM), and Electron energy loss spectroscopy (EELS) were the primary characterization methods utilized for this research. Additional device and materials characterization techniques employed include: current-voltage measurements, thermoelectric measurements, x-ray diffraction (XRD), reflection absorption infra-red spectroscopy (RAIRS), atomic force microscopy (AFM), photoluminescence (PL), and raman spectroscopy. As society has become more aware of its impact on the planet and its limited resources, there has been a push toward developing technologies to sustainably produce the energy we need. Thermoelectric devices convert heat directly into electricity. Thermoelectric devices have the potential to save huge amounts of energy that we currently waste as heat, if we can make them cost-effective. Semiconducting thin films and nanowires appear to be promising avenues of research to attain this goal. Specifically, in this work we will explore the use of ErSb thin films as well as Si and InP nanowire networks for thermoelectric applications. First we will discuss the growth of

  19. All-optical encrypted movie.

    PubMed

    Mosso, Fabian; Barrera, John Fredy; Tebaldi, Myrian; Bolognini, Néstor; Torroba, Roberto

    2011-03-14

    We introduce for the first time the concept of an all-optical encrypted movie. This movie joints several encrypted frames corresponding to a time evolving situation employing the same encoding mask. Thanks to a multiplexing operation we compact the encrypted movie information into a single package. But the decryption of this single package implies the existence of cross-talk if we do not adequately pre-process the encoded information before multiplexing. In this regard, we introduce a grating modulation to each encoded image, and then we proceed to multiplexing. After appropriate filtering and synchronizing procedures applied to the multiplexing, we are able to decrypt and to reproduce the movie. This movie is only properly decoded when in possession of the right decoding key. The concept development is carried-out in virtual optical systems, both for the encrypting and the filtering-decrypting stages. Experimental results are shown to confirm our approach. PMID:21445211

  20. Design of polarization encoded all-optical 4-valued MAX logic gate and its applications

    NASA Astrophysics Data System (ADS)

    Chattopadhyay, Tanay; Nath Roy, Jitendra

    2013-07-01

    Quaternary maximum (QMAX) gate is one type of multi-valued logic gate. An all-optical scheme of polarization encoded quaternary (4-valued) MAX logic gate with the help of Terahertz Optical Asymmetric Demultiplexer (TOAD) based fiber interferometric switch is proposed and described. For the quaternary information processing in optics, the quaternary number (0, 1, 2, 3) can be represented by four discrete polarized states of light. Numerical simulation result confirming the described methods is given in this paper. Some applications of MAX gate in logical operation and memory device are also given.

  1. All-Optical Wavelength Conversion by Picosecond Burst Absorption in Colloidal PbS Quantum Dots.

    PubMed

    Geiregat, Pieter; Houtepen, Arjan J; Van Thourhout, Dries; Hens, Zeger

    2016-01-26

    All-optical approaches to change the wavelength of a data signal are considered more energy- and cost-effective than current wavelength conversion schemes that rely on back and forth switching between the electrical and optical domains. However, the lack of cost-effective materials with sufficiently adequate optoelectronic properties hampers the development of this so-called all-optical wavelength conversion. Here, we show that the interplay between intraband and band gap absorption in colloidal quantum dots leads to a very strong and ultrafast modulation of the light absorption after photoexcitation in which slow components linked to exciton recombination are eliminated. This approach enables all-optical wavelength conversion at rates matching state-of-the-art convertors in speed, yet with cost-effective solution-processable materials. Moreover, the stronger light-matter interaction allows for implementation in small-footprint devices with low switching energies. Being a generic property, the demonstrated effect opens a pathway toward low-power integrated photonics based on colloidal quantum dots as the enabling material. PMID:26692112

  2. All optical controlled photonic integrated circuits using azo dye functionized sol-gel material

    NASA Astrophysics Data System (ADS)

    Ke, Xianjun

    The main focus of this dissertation is development and characterization of all-optical controllable azo dye functionized sol gel material, demonstrating a PIC fabrication technique on glass substrate using such material, and exploration and feasibility demonstration of three PIC functional devices namely optical variable attenuator, optical switches, and optical tunable filters using the material. The realization of all the devices in this dissertation are based on one material: dye functionalized sol-gel material. A photochromic sol-gel material functionalized with azo dye was synthesized and characterized. It possesses a photochromic characteristic under the control of green laser beam illumination. The material characteristics suggest the possibility of a new promising material platform candidate for the fabrication of alloptical controlled photonic integrated circuits. As the first potential application of the dye functionalized sol-gel material, an alloptical variable attenuator was designed and demonstrated. The optical variable attenuation is achieved in Mach-Zehnder interferometric configuration through all-optical modulation of sol-gel waveguide phase shifters. A 2 x 2 optical switch based on multimode interference (MMI) waveguide structure is proposed in the dissertation. The schematic configuration of the optical switch consists of a cascade of two identical MMIs with two all-optical controlled phase shifters realized by using the photochromic sol-gel material. The cross or bar switch state of the optical switch is determined by the phase difference between the two sol-gel waveguide phase shifters. An all-optical tunable filter is designed and its feasibility demonstrated by using the sol-gel photochromic material. Except for the phase change demonstrated on sol-gel waveguide phase shifters, dynamic gratings were observed on sol-gel film when exposed to two interference beams. This reveals the possibility of realizing Bragg grating-based tunable filters

  3. Self-assembled nanostructured resistive switching memory devices fabricated by templated bottom-up growth.

    PubMed

    Song, Ji-Min; Lee, Jang-Sik

    2016-01-01

    Metal-oxide-based resistive switching memory device has been studied intensively due to its potential to satisfy the requirements of next-generation memory devices. Active research has been done on the materials and device structures of resistive switching memory devices that meet the requirements of high density, fast switching speed, and reliable data storage. In this study, resistive switching memory devices were fabricated with nano-template-assisted bottom up growth. The electrochemical deposition was adopted to achieve the bottom-up growth of nickel nanodot electrodes. Nickel oxide layer was formed by oxygen plasma treatment of nickel nanodots at low temperature. The structures of fabricated nanoscale memory devices were analyzed with scanning electron microscope and atomic force microscope (AFM). The electrical characteristics of the devices were directly measured using conductive AFM. This work demonstrates the fabrication of resistive switching memory devices using self-assembled nanoscale masks and nanomateirals growth from bottom-up electrochemical deposition. PMID:26739122

  4. Self-assembled nanostructured resistive switching memory devices fabricated by templated bottom-up growth

    PubMed Central

    Song, Ji-Min; Lee, Jang-Sik

    2016-01-01

    Metal-oxide-based resistive switching memory device has been studied intensively due to its potential to satisfy the requirements of next-generation memory devices. Active research has been done on the materials and device structures of resistive switching memory devices that meet the requirements of high density, fast switching speed, and reliable data storage. In this study, resistive switching memory devices were fabricated with nano-template-assisted bottom up growth. The electrochemical deposition was adopted to achieve the bottom-up growth of nickel nanodot electrodes. Nickel oxide layer was formed by oxygen plasma treatment of nickel nanodots at low temperature. The structures of fabricated nanoscale memory devices were analyzed with scanning electron microscope and atomic force microscope (AFM). The electrical characteristics of the devices were directly measured using conductive AFM. This work demonstrates the fabrication of resistive switching memory devices using self-assembled nanoscale masks and nanomateirals growth from bottom-up electrochemical deposition. PMID:26739122

  5. Spin-transfer switching of orthogonal spin-valve devices at cryogenic temperatures

    SciTech Connect

    Ye, L. Gopman, D. B.; Rehm, L.; Backes, D.; Wolf, G.; Kent, A. D.; Ohki, T.; Kirichenko, A. F.; Vernik, I. V.; Mukhanov, O. A.

    2014-05-07

    We present the quasi-static and dynamic switching characteristics of orthogonal spin-transfer devices incorporating an out-of-plane magnetized polarizing layer and an in-plane magnetized spin valve device at cryogenic temperatures. Switching at 12 K between parallel and anti-parallel spin-valve states is investigated for slowly varied current as well as for current pulses with durations as short as 200 ps. We demonstrate 100% switching probability with current pulses 0.6 ns in duration. We also present a switching probability diagram that summarizes device switching operation under a variety of pulse durations, amplitudes, and polarities.

  6. Advance in thermo-optical switches: principles, materials, design, and device structure

    NASA Astrophysics Data System (ADS)

    Coppola, Giuseppe; Sirleto, Luigi; Rendina, Ivo; Iodice, Mario

    2011-07-01

    All-optical networking can be the sole approach to provide the huge bandwidth required for future networks. The essential elements in such an optical network are optical switches. A number of options have been proposed in order to implement them efficiently. We focus on thermo-optical switches. First, the physical principles of the thermo-optic effect are briefly introduced. A description of the most common technologies used for the fabrication of thermo-optic switches is provided along with the values of thermo-optic coefficient for a number of materials. The main steps useful in order to design thermo-optical switches are also briefly introduced. Finally, a bird's-eye view of the main and recent proposals of switches based on the thermo-optic effect is reported and their performances compared.

  7. All-optical transistors and logic gates using a parity-time-symmetric Y-junction: Design and simulation

    SciTech Connect

    Ding, Shulin; Wang, Guo Ping

    2015-09-28

    Classical nonlinear or quantum all-optical transistors are dependent on the value of input signal intensity or need extra co-propagating beams. In this paper, we present a kind of all-optical transistors constructed with parity-time (PT)-symmetric Y-junctions, which perform independently on the value of signal intensity in an unsaturated gain case and can also work after introducing saturated gain. Further, we show that control signal can switch the device from amplification of peaks in time to transformation of peaks to amplified troughs. By using these PT-symmetric Y-junctions with currently available materials and technologies, we can implement interesting logic functions such as NOT and XOR (exclusive OR) gates, implying potential applications of such structures in designing optical logic gates, optical switches, and signal transformations or amplifications.

  8. Stochastic simulations of switching error in magneto elastic and spin-Hall effect based switching of nanomagnetic devices

    NASA Astrophysics Data System (ADS)

    Al-Rashid, Md Mamun; Bandyopadhyay, Supriyo; Atulasimha, Jayasimha

    2015-03-01

    Switching of single domain multiferroic nanomagnets with electrically generated mechanical strain and with spin torque due to spin current generated via the giant spin Hall effect are two promising energy-efficient methods to switch nanomagnets in magnetic computing devices. However, switching of nanomagnets is always error-prone at room temperature owing to the effect of thermal noise. In this work, we model the strain-based and spin-Hall-effect-based switching of nanomagnetic devices using stochastic Landau-Lifshitz-Gilbert (LLG) equation and present a quantitative comparison in terms of switching time, reliability and energy dissipation. This work is supported by the US National Science Foundation under the SHF-Small Grant CCF-1216614, CAREER Grant CCF-1253370, NEB 2020 Grant ECCS-1124714 and SRC under NRI Task 2203.001.

  9. Photonic temporal integrator for all-optical computing.

    PubMed

    Slavík, Radan; Park, Yongwoo; Ayotte, Nicolas; Doucet, Serge; Ahn, Tae-Jung; LaRochelle, Sophie; Azaña, José

    2008-10-27

    We report the first experimental realization of an all-optical temporal integrator. The integrator is implemented using an all-fiber active (gain-assisted) filter based on superimposed fiber Bragg gratings made in an Er-Yb co-doped optical fiber that behaves like an 'optical capacitor'. Functionality of this device was tested by integrating different optical pulses, with time duration down to 60 ps, and by integration of two consecutive pulses that had different relative phases, separated by up to 1 ns. The potential of the developed device for implementing all-optical computing systems for solving ordinary differential equations was also experimentally tested. PMID:18958098

  10. Thin film deposition of metal oxides in resistance switching devices: electrode material dependence of resistance switching in manganite films

    NASA Astrophysics Data System (ADS)

    Nakamura, Toshihiro; Homma, Kohei; Tachibana, Kunihide

    2013-02-01

    The electric-pulse-induced resistance switching in layered structures composed of polycrystalline Pr1- x Ca x MnO3 (PCMO) sandwiched between Pt bottom electrode and top electrodes of various metals (metal/PCMO/Pt) was studied by direct current current-voltage ( I- V) measurements and alternating current impedance spectroscopy. The I- V characteristics showed nonlinear, asymmetric, and hysteretic behavior in PCMO-based devices with top electrode of Al, Ni, and Ag, while no hysteretic behavior was observed in Au/PCMO/Pt devices. The PCMO-based devices with hysteretic I- V curves exhibited an electric-pulse-induced resistance switching between high and low resistance states. Impedance spectroscopy was employed to study the origin of the resistance switching. From comparison of the impedance spectra between the high and low resistance states, the resistance switching in the PCMO-based devices was mainly due to the resistance change in the interface between the film and the electrode. The electronic properties of the devices showed stronger correlation with the oxidation Gibbs free energy than with the work function of the electrode metal, which suggests that the interface impedance is due to an interfacial oxide layer of the electrode metal. The interface component observed by impedance spectroscopy in the Al/PCMO/Pt device might be due to Al oxide layer formed by oxidation of Al top electrode. It is considered that the interfacial oxide layer plays a dominant role in the bipolar resistance switching in manganite film-based devices.

  11. Fast deterministic switching in orthogonal spin torque devices via the control of the relative spin polarizations

    NASA Astrophysics Data System (ADS)

    Park, Junbo; Ralph, D. C.; Buhrman, R. A.

    2013-12-01

    We model 100 ps pulse switching dynamics of orthogonal spin transfer (OST) devices that employ an out-of-plane polarizer and an in-plane polarizer. Simulation results indicate that increasing the spin polarization ratio, CP = PIPP/POPP, results in deterministic switching of the free layer without over-rotation (360° rotation). By using spin torque asymmetry to realize an enhanced effective PIPP, we experimentally demonstrate this behavior in OST devices in parallel to anti-parallel switching. Modeling predicts that decreasing the effective demagnetization field can substantially reduce the minimum CP required to attain deterministic switching, while retaining low critical switching current, Ip ˜ 500 μA.

  12. Photonic encryption using all optical logic.

    SciTech Connect

    Blansett, Ethan L.; Schroeppel, Richard Crabtree; Tang, Jason D.; Robertson, Perry J.; Vawter, Gregory Allen; Tarman, Thomas David; Pierson, Lyndon George

    2003-12-01

    With the build-out of large transport networks utilizing optical technologies, more and more capacity is being made available. Innovations in Dense Wave Division Multiplexing (DWDM) and the elimination of optical-electrical-optical conversions have brought on advances in communication speeds as we move into 10 Gigabit Ethernet and above. Of course, there is a need to encrypt data on these optical links as the data traverses public and private network backbones. Unfortunately, as the communications infrastructure becomes increasingly optical, advances in encryption (done electronically) have failed to keep up. This project examines the use of optical logic for implementing encryption in the photonic domain to achieve the requisite encryption rates. In order to realize photonic encryption designs, technology developed for electrical logic circuits must be translated to the photonic regime. This paper examines two classes of all optical logic (SEED, gain competition) and how each discrete logic element can be interconnected and cascaded to form an optical circuit. Because there is no known software that can model these devices at a circuit level, the functionality of the SEED and gain competition devices in an optical circuit were modeled in PSpice. PSpice allows modeling of the macro characteristics of the devices in context of a logic element as opposed to device level computational modeling. By representing light intensity as voltage, 'black box' models are generated that accurately represent the intensity response and logic levels in both technologies. By modeling the behavior at the systems level, one can incorporate systems design tools and a simulation environment to aid in the overall functional design. Each black box model of the SEED or gain competition device takes certain parameters (reflectance, intensity, input response), and models the optical ripple and time delay characteristics. These 'black box' models are interconnected and cascaded in an

  13. Ion chromatographic system with a novel switching suppression device.

    PubMed

    Sato, Shinji; Ogura, Yutaka; Miyanaga, Akiyoshi; Sugimoto, Tadanori; Tanaka, Kazuhiko; Moriyama, Hiroyuki

    2002-05-17

    Ion chromatography (IC) has been a powerful tool for measuring ionic species in environmental samples such as tap, river and drain waters. Suppressor modules (membrane and disposable column types) have been used for reducing the background of a baseline. A new type of suppressor device, which has a suppressor resin and switching valve was developed. Fresh ionic resin is introduced into a groove for each analysis to perform the suppression of the working eluent. The eluent composition for obtaining higher sensitivity and better resolutions among ionic species and carbonate ion was also investigated. Although carbonate buffers are used for ion separation in general, the separation of carbonate ion from other ions was not achieved. A borate eluent resulted in good resolutions and higher sensitivity. A new column was also developed for obtaining higher column efficiency and resolution. The optimization of anion separation using a new IC system (IC-2001) that consists of a new suppressor device, an anion-exchange column (TSKgel SuperIC-Anion, 150x4.6 mm), an autosampler, a conductivity cell and a pump in a compact module is described. PMID:12108667

  14. Development of a prototype T-shaped fast switching device for electron cyclotron current drive systems

    NASA Astrophysics Data System (ADS)

    Sekiguchi, Kenji; Nagashima, Koji; Honzu, Toshihiko; Saigusa, Mikio; Oda, Yasuhisa; Takahashi, Koji; Sakamoto, Keishi

    2016-09-01

    A T-shaped high-power switching device composed of circular corrugated waveguides with three ports and double dielectric disks made of sapphire was proposed as a fast switching device based on a new principle in electron cyclotron current drive systems. This switching device has the advantages of operating at a fixed frequency and being compact. The design of the prototype switch was obtained by numerical simulations using a finite-difference time-domain (FDTD) method. The size of these components was optimized for the frequency band of 170 GHz. Low-power tests were carried out in a cross-shaped model.

  15. All-optical flip-flop based on coupled SOA-PSW

    NASA Astrophysics Data System (ADS)

    Wang, Lina; Wang, Yongjun; Wu, Chen; Wang, Fu

    2016-07-01

    The semiconductor optical amplifier (SOA) has obvious advantages in all-optical signal processing, because of the simple structure, strong non-linearity, and easy integration. A variety of all-optical signal processing functions, such as all-optical wavelength conversion, all-optical logic gates and all-optical sampling, can be completed by SOA. So the SOA has been widespread concerned in the field of all-optical signal processing. Recently, the polarization rotation effect of SOA is receiving considerable interest, and many researchers have launched numerous research work utilizing this effect. In this paper, a new all-optical flip-flop structure using polarization switch (PSW) based on polarization rotation effect of SOA is presented.

  16. In-situ observation of self-regulated switching behavior in WO{sub 3-x} based resistive switching devices

    SciTech Connect

    Hong, D. S.; Wang, W. X.; Chen, Y. S. Sun, J. R.; Shen, B. G.

    2014-09-15

    The transmittance of tungsten oxides can be adjusted by oxygen vacancy (V{sub o}) concentration due to its electrochromic property. Here, we report an in-situ observation of resistive switching phenomenon in the oxygen-deficient WO{sub 3-x} planar devices. Besides directly identifying the formation/rupture of dark-colored conductive filaments in oxide layer, the stripe-like WO{sub 3-x} device demonstrated self-regulated switching behavior during the endurance testing, resulting in highly consistent switching parameters after a stabilizing process. For very high V{sub o}s mobility was demonstrated in the WO{sub 3-x} film by the pulse experiment, we suggested that the electric-field-induced homogeneous migration of V{sub o}s was the physical origin for such unique switching characteristics.

  17. Status and Prospects of ZnO-Based Resistive Switching Memory Devices.

    PubMed

    Simanjuntak, Firman Mangasa; Panda, Debashis; Wei, Kung-Hwa; Tseng, Tseung-Yuen

    2016-12-01

    In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges. PMID:27541816

  18. Inhaled corticosteroids for asthma: impact of practice level device switching on asthma control

    PubMed Central

    Thomas, Mike; Price, David; Chrystyn, Henry; Lloyd, Andrew; Williams, Angela E; von Ziegenweidt, Julie

    2009-01-01

    Background As more inhaled corticosteroid (ICS) devices become available, there may be pressure for health-care providers to switch patients with asthma to cheaper inhaler devices. Our objective was to evaluate impact on asthma control of inhaler device switching without an accompanying consultation in general practice. Methods This 2-year retrospective matched cohort study used the UK General Practice Research Database to identify practices where ICS devices were changed without a consultation for ≥5 patients within 3 months. Patients 6–65 years of age from these practices whose ICS device was switched were individually matched with patients using the same ICS device who were not switched. Asthma control over 12 months after the switch was assessed using a composite measure including short-acting β-agonist and oral corticosteroid use, hospitalizations, and subsequent changes to therapy. Results A total of 824 patients from 55 practices had a device switch and could be matched. Over half (53%) of device switches were from dry powder to metered-dose inhalers. Fewer patients in switched than matched cohort experienced successful treatment based on the composite measure (20% vs. 34%) and more experienced unsuccessful treatment (51% vs. 38%). After adjusting for possible baseline confounding factors, the odds ratio for treatment success in the switched cohort compared with controls was 0.29 (95% confidence interval [CI], 0.19 to 0.44; p < 0.001) and for unsuccessful treatment was 1.92 (95% CI, 1.47 to 2.56; p < 0.001). Conclusion Switching ICS devices without a consultation was associated with worsened asthma control and is therefore inadvisable. PMID:19121204

  19. Novel Resistance Switching Devices Based on Sub-10 nm Polymer Thin Film

    NASA Astrophysics Data System (ADS)

    Lee, Dongjin; Baek, Sungsik; Ree, Moonhor; Kim, Ohyun

    2008-07-01

    Resistive switching memory devices were fabricated using ultrathin (<10 nm) poly(o-anthranilic acid-co-aniline) films. When the devices were biased beyond a critical value with a current compliance of 10 mA, the devices suddenly switched from a high resistive state to a low resistive state (10 mA), with a difference in injection current of more than 4 orders of magnitude. Controlling the injection current level (by controlling the current compliance) allowed the high resistive state of the device to be restored. The devices possess a prolonged retention time of 3 ×103 s after switching. The conduction mechanism in the OFF-state implies that the resistive switching of the device can be explained in terms of filament theory.

  20. All-optical metamaterial modulators: Fabrication, simulation and characterization

    NASA Astrophysics Data System (ADS)

    Ku, Zahyun

    Artificially structured composite metamaterials consist of sub-wavelength sized structures that exhibit unusual electromagnetic properties not found in nature. Since the first experimental verification in 2000, metamaterials have drawn considerable attention because of their broad range of potential applications. One of the most attractive features of metamaterials is to obtain negative refraction, termed left-handed materials or negative-index metamaterials, over a limited frequency band. Negative-index metamaterials at near infrared wavelength are fabricated with circular, elliptical and rectangular holes penetrating through metal/dielectric/metal films. All three negative-index metamaterial structures exhibit similar figure of merit; however, the transmission is higher for the negative-index metamaterial with rectangular holes as a result of an improved impedance match with the substrate-superstrate (air-glass) combination. In general, the processing procedure to fabricate the fishnet structured negative-index metamaterials is to define the hole-size using a polymetric material, usually by lithographically defining polymer posts, followed by deposition of the constitutive materials and dissolution of the polymer (liftoff processing). This processing (fabrication of posts: multi-layer deposition: liftoff) often gives rise to significant sidewall-angle because materials accumulate on the tops of the posts that define the structure, each successive film deposition has a somewhat larger aperture on the bottom metamaterial film, giving rise to a nonzero sidewall-angle and to optical bianisotropy. Finally, we demonstrate a nanometer-scale, sub-picosecond metamaterial device capable of over terabit/second all-optical communication in the near infrared spectrum. We achieve a 600 fs device response by utilizing a regime of sub-picosecond carrier dynamics in amorphous silicon and ˜70% modulation in a path length of only 124 nm by exploiting the strong nonlinearities in

  1. Threshold Switching Characteristics of Nb/NbO2/TiN Vertical Devices

    SciTech Connect

    Wang, Yuhan; Comes, Ryan B.; Wolf, Stuart A.; Lu, Jiwei

    2015-11-25

    Nb/NbO2/TiN vertical structures were synthesized in-situ and patterned to devices with different contact areas. The devices exhibited threshold resistive switching with minimal hysteresis and a small EThreshold (60~90 kV/cm). The switching behavior was unipolar, and demonstrated good repeatability. A less sharp but still sizable change in the device resistance was observed up to 150 °C. It was found that the resistive switching without Nb capping layer exhibited the hysteretic behavior and much larger EThreshold (~250 kV/cm) likely due to a 2-3 nm surface Nb2O5 layer. The stable threshold switching behavior well above room temperature shows the potential applications of this device as an electronic switch.

  2. Development of a biochemical switching device: mathematical model.

    PubMed

    Okamoto, M

    1990-01-01

    There are many examples of enzymes that share substrates or cofactors in a cyclic manner. Techniques have been developed that use cyclic enzyme systems to assay quantitatively small amounts of biochemical substances (cofactor, substrate), however, only a few studies of the control of these systems have been published. The author previously showed with computer simulations that cyclic enzyme systems have the reliability of ON-OFF types of operation (McCulloch-Pitts' neuronic equation) and the applicability for a switching circuit in a biocomputer. The switching time was inevitably determined in accordance with the difference in amount between two inputs of the system. A unique switching mechanism of cyclic enzyme systems (basic switching element) and the effects of excitatory stimuli on switching properties of the integrated biochemical switching system are demonstrated. PMID:2082931

  3. All optical modulator based on silicon resonator

    NASA Astrophysics Data System (ADS)

    Pinhas, Hadar; Bidani, Liron; Baharav, Oded; Sinvani, Moshe; Danino, Meir; Zalevsky, Zeev

    2015-08-01

    In this paper we present an all-optical silicon modulator, where a silicon slab (450 μm) thick is coated on both sides to get a Fabry-Perot resonator for laser beam at wavelength of 1550nm. Most of the modulators discussed in literature, are driven by electrical field rather than by light. We investigate new approaches regarding the dependence of the absorption of the optical signal on the control laser pulse at 532 nm having 5nm pulse width. Our silicon based Fabry-Perot resonator increases the intrinsic c-Si finesse to >10, instead of the uncoated silicon with natural finesse of 2.5. The improved finesse is shown to have significant effect on the modulation depth using a pulsed laser. A modulation of 12dB was attained. The modulation is ascribed to two different effects - The Plasma Dispersion Effect (PDE) and the Thermo- Optic Effect (TOE). The PDE causes increase in the signal absorption in silicon via the absorption of the control laser light. On top of that, the transmission of the signal can decrease dramatically in high finesse resonators due to change in the refractive index due to TOE. The changes in the signal's absorption coefficient and in the refractive index are the result of incremental change in the concentration of free carriers. The TOE gives rise to higher refractive index as opposed to the PDE which triggers a decrease in the refractive index. Finally, tradeoff considerations are presented on how to modify one effect to counter the other one, leading to an optimal device having reduced temperature dependence.

  4. All-optical SOA latch fail-safe alarm system

    NASA Astrophysics Data System (ADS)

    McAulay, Alastair D.

    2004-11-01

    Emergency alarm systems, for example, that switch off critical processes in process plant, are vulnerable to deliberate or accidental sabotage through coupling of electromagnetic pulses (EMP) to wires and/or from sparks due to broken wires. A proposed system significantly reduces vulnerability by using a fast all-optical latch in conjunction with an optical sensor and optical fibers. Sparks cannot be created on breaking an optical beam and electromagnetic field transients have negligible effect on optical signals. The optical latch uses optical semiconductor amplifiers (SOAs) configured to form a flip-flop. The flip-flop latches after the occurrence of an intrusion that may be as short as a few nanoseconds, much faster than most environmental changes occur. Detection of an emergency or any break in connections causes the light to drop, triggering the alarm. Computer simulation shows that the all-optical latch is fast and effective.

  5. Demonstration and characterisation of a non-inverting all-optical read/write regenerative memory

    NASA Astrophysics Data System (ADS)

    Johnson, N. C.; Harrison, J. A.; Blow, K. J.

    2008-09-01

    An all-optical regenerative memory device using a single loop mirror and a semiconductor optical amplifier is experimentally demonstrated. This configuration has potential for a low power all-optical stable memory device with non-inverting characteristics where packets are stored by continuously injecting the regenerated data back into the loop.

  6. Hardware implementation of associative memory characteristics with analogue-type resistive-switching device

    NASA Astrophysics Data System (ADS)

    Moon, Kibong; Park, Sangsu; Jang, Junwoo; Lee, Daeseok; Woo, Jiyong; Cha, Euijun; Lee, Sangheon; Park, Jaesung; Song, Jeonghwan; Koo, Yunmo; Hwang, Hyunsang

    2014-12-01

    We have investigated the analogue memory characteristics of an oxide-based resistive-switching device under an electrical pulse to mimic biological spike-timing-dependent plasticity synapse characteristics. As a synaptic device, a TiN/Pr0.7Ca0.3MnO3-based resistive-switching device exhibiting excellent analogue memory characteristics was used to control the synaptic weight by applying various pulse amplitudes and cycles. Furthermore, potentiation and depression characteristics with the same spikes can be achieved by applying negative and positive pulses, respectively. By adopting complementary metal-oxide-semiconductor devices as neurons and TiN/PCMO devices as synapses, we implemented neuromorphic hardware that mimics associative memory characteristics in real time for the first time. Owing to their excellent scalability, resistive-switching devices, shows promise for future high-density neuromorphic applications.

  7. Complementary resistive switching behaviors evolved from bipolar TiN/HfO2/Pt device

    NASA Astrophysics Data System (ADS)

    Chen, Xinman; Hu, Wei; Li, Yan; Wu, Shuxiang; Bao, Dinghua

    2016-02-01

    In this letter, the dynamic evolution of TiN/HfO2/Pt device from bipolar resistive switching (BRS) to complementary resistive switching (CRS) was reported. The device exhibits the uniform BRS with long retention, good endurance, and self-compliance characteristics after the asymmetric two-step electroforming. However, BRS of the device eventually transforms to CRS after the transitional processes through controlling the compliance current. Meanwhile, the effective barrier height rises up accordingly as the device evolves from BRS to CRS. These superior resistive switching performances of TiN/HfO2/Pt device here can be elucidated in views of evolution of asymmetric filament. This work confirms the intimate correlation and discrepancy between BRS and CRS, and also indicates the potential application of TiN/HfO2/Pt device for future ultra-dense resistive random access memory.

  8. Comparing SiC switching power devices: MOSFET, NPN transistor and GTO thyristor

    NASA Astrophysics Data System (ADS)

    Huang, Alex Q.; Zhang, Bo

    2000-02-01

    This paper for the first time systematically analyzed the operation mechanism of SiC NPN transistors. Theoretical device figure-of-merits for switching power devices based on the conduction loss and switching loss were developed. The on-state loss and the switching loss of 4.5-kV SiC switching power devices (MOSFET, NPN transistor and GTO thyristor) were then compared by using theoretical and numerical calculations. Special emphasis is placed on comparing the total power loss of the devices at a given current density. Theoretical analyses and simulation results show that GTO thyristors have a large switching loss due to the long current tail at turn-off, hence restricting its maximum operation frequency. High voltage SiC MOSFETs have a large on-state power dissipation at high current levels due to the resistive nature of the drift region, restricting their applications at high current densities. SiC NPN transistors have a comparable switching loss as that of SiC MOSFETs, but at the same time, SiC NPN transistors have the lowest on-state loss. This study indicates that SiC NPN transistor is the most attractive switching power device at 4.5 kV.

  9. All-optical controllable channel-drop filters in two-dimensional square-lattice photonic crystals

    NASA Astrophysics Data System (ADS)

    Fasihi, K.

    2016-05-01

    A novel all-optical controllable channel-drop filter in photonic crystals (PC) of square lattice is presented. We show that using a resonant-cavity-based add-drop filter with a wavelength-selective reflection feedback and a single-control switching module which is based on nonlinear PC microcavities, the dropped channel can be routed to the drop port or returned to the bus waveguide. Using the temporal coupled-mode theory and two-dimensional nonlinear finite-difference time-domain method, the performance of the proposed device is investigated and the simulation results show the validity of the proposed design.

  10. Ferroelastic switching for nanoscale non-volatile magnetoelectric devices

    SciTech Connect

    Baek, S. H.; Jang, H. W.; Folkman, C. M.; Li, Yulan; Winchester, B.; Zhang, J. X.; He, Q.; Chu, Y. H.; Nelson, C. T.; Rzchowski, M. S.; Pan, X. Q.; Ramesh, R.; Chen , L.Q.; Eom, C.B.

    2010-04-01

    Multiferroics, where (anti-) ferromagnetic, ferroelectric, and ferroelastic order parameters coexist [1-5], enables manipulation of magnetic ordering by electric field through switching of the electric polarization [6-9]. It has been shown that realization of magnetoelectric coupling in single-phase multiferroic such as BiFeO3 requires ferroelastic (71o, 109o) rather than ferroelectric (180o) domain switching [6]. However, the control of such ferroleastic switching in a singlephase system has been a significant challenge as elastic interactions tend to destabilize small switched volumes, resulting in subsequent ferroelastic backswitching at zero electric field, thus disappearance of nonvolatile information storage [10, 11]. Guided by our phase-field simulations, we here report an approach to stabilize ferroelastic switching by eliminating the stress-induced instability responsible for back-switching using isolated monodomain BiFeO3islands. This work demonstrates a critical step to control and utilize nonvolatile magnetoelectric coupling at the nanoscale. Beyond magnetoelectric coupling, it provides a framework for exploring a route to control multiple order parameters coupled to ferroelastic order in other low-symmetry materials.

  11. Large-scale photonic integration for advanced all-optical routing functions

    NASA Astrophysics Data System (ADS)

    Nicholes, Steven C.

    Advanced InP-based photonic integrated circuits are a critical technology to manage the increasing bandwidth demands of next-generation all-optical networks. Integrating many of the discrete functions required in optical networks into a single device provides a reduction in system footprint and optical losses by eliminating the fiber coupling junctions between components. This translates directly into increased system reliability and cost savings. Although many key network components have been realized via InP-based monolithic integration over the years, truly large-scale photonic ICs have only recently emerged in the marketplace. This lag-time has been mostly due to historically low device yields. In all-optical routing applications, large-scale photonic ICs may be able to address two of the key roadblocks associated with scaling modern electronic routers to higher capacities---namely, power and size. If the functions of dynamic wavelength conversion and routing are moved to the optical layer, we can eliminate the need for power-hungry optical-to-electrical (O/E) and electrical-to-optical (E/O) data conversions at each router node. Additionally, large-scale photonic ICs could reduce the footprint of such a system by combining the similar functions of each port onto a single chip. However, robust design and manufacturing techniques that will enable high-yield production of these chips must be developed. In this work, we demonstrate a monolithic tunable optical router (MOTOR) chip consisting of an array of eight 40-Gbps wavelength converters and a passive arrayed-waveguide grating router that functions as the packet-forwarding switch fabric of an all-optical router. The device represents one of the most complex InP photonic ICs ever reported, with more than 200 integrated functional elements in a single chip. Single-channel 40 Gbps wavelength conversion and channel switching using 231-1 PRBS data showed a power penalty as low as 4.5 dB with less than 2 W drive power

  12. Alcohol-Mediated Resistance-Switching Behavior in Metal-Organic Framework-Based Electronic Devices.

    PubMed

    Liu, Yaqing; Wang, Hong; Shi, Wenxiong; Zhang, Weina; Yu, Jiancan; Chandran, Bevita K; Cui, Chenlong; Zhu, Bowen; Liu, Zhiyuan; Li, Bin; Xu, Cai; Xu, Zhiling; Li, Shuzhou; Huang, Wei; Huo, Fengwei; Chen, Xiaodong

    2016-07-25

    Metal-organic frameworks (MOFs) have drawn increasing attentions as promising candidates for functional devices. Herein, we present MOF films in constructing memory devices with alcohol mediated resistance switching property, where the resistance state is controlled by applying alcohol vapors to achieve multilevel information storage. The ordered packing mode and the hydrogen bonding system of the guest molecules adsorbed in MOF crystals are shown to be the reason for the alcohol mediated electrical switching. This chemically mediated memory device can be a candidate in achieving environment-responsive devices and exhibits potential applications in wearable information storage systems. PMID:27311703

  13. Asymmetric resistive switching processes in W:AlOx/WOy bilayer devices

    NASA Astrophysics Data System (ADS)

    Wu, Hua-Qiang; Ming-Hao, Wu; Li, Xin-Yi; Bai, Yue; Deng, Ning; Yu, Zhi-Ping; Qian, He

    2015-05-01

    Asymmetric resistive switching processes were observed in W:AlOx/WOy bilayer RRAM devices. During pulse programming measurements, the RESET speed is in the range of hundreds of microseconds under -1.1 V bias, while the SET speed is in the range of tens of nanoseconds under 1.2 V bias. Electrical measurements with different pulse conditions and different temperatures were carried out to understand these significant differences in switching time. A redox reaction model in the W:AlOx/WOy device structure is proposed to explain this switching time difference.

  14. Three-terminal resistive switching memory in a transparent vertical-configuration device

    SciTech Connect

    Ungureanu, Mariana; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E.

    2014-01-06

    The resistive switching phenomenon has attracted much attention recently for memory applications. It describes the reversible change in the resistance of a dielectric between two non-volatile states by the application of electrical pulses. Typical resistive switching memories are two-terminal devices formed by an oxide layer placed between two metal electrodes. Here, we report on the fabrication and operation of a three-terminal resistive switching memory that works as a reconfigurable logic component and offers an increased logic density on chip. The three-terminal memory device we present is transparent and could be further incorporated in transparent computing electronic technologies.

  15. Fast deterministic switching in orthogonal spin torque devices via the control of the relative spin polarizations

    SciTech Connect

    Park, Junbo; Buhrman, R. A.; Ralph, D. C.

    2013-12-16

    We model 100 ps pulse switching dynamics of orthogonal spin transfer (OST) devices that employ an out-of-plane polarizer and an in-plane polarizer. Simulation results indicate that increasing the spin polarization ratio, C{sub P} = P{sub IPP}/P{sub OPP}, results in deterministic switching of the free layer without over-rotation (360° rotation). By using spin torque asymmetry to realize an enhanced effective P{sub IPP}, we experimentally demonstrate this behavior in OST devices in parallel to anti-parallel switching. Modeling predicts that decreasing the effective demagnetization field can substantially reduce the minimum C{sub P} required to attain deterministic switching, while retaining low critical switching current, I{sub p} ∼ 500 μA.

  16. Graphene Based Reversible Nano-Switch/Sensor Schottky Diode (NANOSSSD) Device

    NASA Technical Reports Server (NTRS)

    Miranda, Felix A. (Inventor); Theofylaktos, Onoufrios (Inventor); Pinto, Nicholas J. (Inventor); Mueller, Carl H. (Inventor); Santos, Javier (Inventor); Meador, Michael A. (Inventor)

    2015-01-01

    A nanostructure device is provided and performs dual functions as a nano-switching/sensing device. The nanostructure device includes a doped semiconducting substrate, an insulating layer disposed on the doped semiconducting substrate, an electrode formed on the insulating layer, and at least one layer of graphene formed on the electrode. The at least one layer of graphene provides an electrical connection between the electrode and the substrate and is the electroactive element in the device.

  17. Subpicosecond photonic switching based on bacteriorhodopsin

    NASA Astrophysics Data System (ADS)

    Ormos, Pal; Fabian, Laszlo; Heiner, Zsuzsanna; Mero, Mark; Kiss, Miklos; Wolff, Elmar; Osvay, Karoly; der, Andras

    2011-03-01

    All-optical data processing is the most promising approach for further improvement in data trafficking. We present a subpicosecond photonic switch where the active role is performed by the chromoprotein bacteriorhodopsin. The changes in the refractive index that accompany the steps of the photocycle of bacteriorhodopsin are used for all optical switching in appropriate integrated optical devices. We use grating coupled planar waveguides and the coupling is modulated by the light induced refractive index changes of bacteriorhodopsin. The switching is demonstrated in ultrafast pump-probe experiments. Different transitions of the photocycle are explored for switching applications. We show that by using the bR to I transition subpicosecond switching can be readily achieved. The approach is a basis for protein-based integrated optical devices, eventually leading to a conceptual revolution in telecommunications technologies.

  18. Nonlinear fiber applications for ultrafast all-optical signal processing

    NASA Astrophysics Data System (ADS)

    Kravtsov, Konstantin

    In the present dissertation different aspects of all-optical signal processing, enabled by the use of nonlinear fibers, are studied. In particular, we focus on applications of a novel heavily GeO2-doped (HD) nonlinear fiber, that appears to be superior to many other types of nonlinear fibers because of its high nonlinearity and suitability for the use in nonlinear optical loop mirrors (NOLMs). Different functions, such as all-optical switching, thresholding, and wavelength conversion, are demonstrated with the HD fibers in the NOLM configuration. These basic functions are later used for realization of ultrafast time-domain demultiplexers, clock recovery, detectors of short pulses in stealth communications, and primitive elements for analog computations. Another important technology that benefits from the use of nonlinear fiber-based signal processing is optical code-division multiple access (CDMA). It is shown in both theory and experiment that all-optical thresholding is a unique way of improving existing detection methods for optical CDMA. Also, it is the way of implementation of true asynchronous optical spread-spectrum networks, which allows full realization of optical CDMA potential. Some aspects of quantum signal processing and manipulation of quantum states are also studied in this work. It is shown that propagation and collisions of Thirring solitons lead to a substantial squeezing of quantum states, which may find applications for generation of squeezed light.

  19. Conductance switching in single light-sensitive molecular device with carbon nanotube electrodes

    NASA Astrophysics Data System (ADS)

    Xia, Cai-Juan; Gao, Kun; Zhang, De-Hua; Yang, Mao; Feng, Fei-Long

    2014-08-01

    By applying nonequilibrium Green's function formalism combined first-principles density functional theory, a new mechanism for optical switch of single molecular device with carbon nanotube electrodes is proposed. The molecule comprises the switch can convert between enol and keto isomers upon photoinduced excited state hydrogen transfer in the molecular bridge. Theoretical results show that these two isomers exhibit very different current-voltage characteristics both in armchair and zigzag junction, which can realize the on and off states of the molecular switch. Meantime, the chirality of the single-walled carbon nanotube (SWCNT) electrodes strongly affects the switching characteristics of the molecular junctions. The maximum value of on-off ratio can reach 72 at 1.6 V for the switch with zigzag SWCNT electrodes, suggesting potential applications of this junction in future design of light-driven molecular switches.

  20. Dual bipolar resistive switching in the sub-forming regime of HfO2 resistive switching devices

    NASA Astrophysics Data System (ADS)

    Recher, Shani; Yalon, Eilam; Ritter, Dan; Riess, Ilan; Salzman, Joseph

    2015-09-01

    Resistive switching in HfO2 in the sub-forming regime (before an electroforming step had been fully performed) is studied by electrical measurements using a very low current compliance of 1 μA. Electroforming under low current limitation results in reduced self-heating and partial filament formation. Following the reset process in this sub-forming regime, the device fully recovers its pristine resistive state. Furthermore, a dual bipolar resistive switching (DBRS) effect is observed, which we model as two antiparallel bipolar resistive switches. We attribute this phenomenon to intermittent formation and rupture of filaments originating from opposite electrodes. Following the rupture of a filament, originating from one of the electrodes, another filament originating from the opposite electrode is formed.

  1. Superstructures of chiral nematic microspheres as all-optical switchable distributors of light

    PubMed Central

    Aβhoff, Sarah J.; Sukas, Sertan; Yamaguchi, Tadatsugu; Hommersom, Catharina A.; Le Gac, Séverine; Katsonis, Nathalie

    2015-01-01

    Light technology is based on generating, detecting and controlling the wavelength, polarization and direction of light. Emerging applications range from electronics and telecommunication to health, defence and security. In particular, data transmission and communication technologies are currently asking for increasingly complex and fast devices, and therefore there is a growing interest in materials that can be used to transmit light and also to control the distribution of light in space and time. Here, we design chiral nematic microspheres whose shape enables them to reflect light of different wavelengths and handedness in all directions. Assembled in organized hexagonal superstructures, these microspheres of well-defined sizes communicate optically with high selectivity for the colour and chirality of light. Importantly, when the microspheres are doped with photo-responsive molecular switches, their chiroptical communication can be tuned, both gradually in wavelength and reversibly in polarization. Since the kinetics of the “on” and “off” switching can be adjusted by molecular engineering of the dopants and because the photonic cross-communication is selective with respect to the chirality of the incoming light, these photo-responsive microspheres show potential for chiroptical all-optical distributors and switches, in which wavelength, chirality and direction of the reflected light can be controlled independently and reversibly. PMID:26400584

  2. Superstructures of chiral nematic microspheres as all-optical switchable distributors of light

    NASA Astrophysics Data System (ADS)

    Aβhoff, Sarah J.; Sukas, Sertan; Yamaguchi, Tadatsugu; Hommersom, Catharina A.; Le Gac, Séverine; Katsonis, Nathalie

    2015-09-01

    Light technology is based on generating, detecting and controlling the wavelength, polarization and direction of light. Emerging applications range from electronics and telecommunication to health, defence and security. In particular, data transmission and communication technologies are currently asking for increasingly complex and fast devices, and therefore there is a growing interest in materials that can be used to transmit light and also to control the distribution of light in space and time. Here, we design chiral nematic microspheres whose shape enables them to reflect light of different wavelengths and handedness in all directions. Assembled in organized hexagonal superstructures, these microspheres of well-defined sizes communicate optically with high selectivity for the colour and chirality of light. Importantly, when the microspheres are doped with photo-responsive molecular switches, their chiroptical communication can be tuned, both gradually in wavelength and reversibly in polarization. Since the kinetics of the “on” and “off” switching can be adjusted by molecular engineering of the dopants and because the photonic cross-communication is selective with respect to the chirality of the incoming light, these photo-responsive microspheres show potential for chiroptical all-optical distributors and switches, in which wavelength, chirality and direction of the reflected light can be controlled independently and reversibly.

  3. Application of nanomaterials in two-terminal resistive-switching memory devices

    PubMed Central

    Ouyang, Jianyong

    2010-01-01

    Nanometer materials have been attracting strong attention due to their interesting structure and properties. Many important practical applications have been demonstrated for nanometer materials based on their unique properties. This article provides a review on the fabrication, electrical characterization, and memory application of two-terminal resistive-switching devices using nanomaterials as the active components, including metal and semiconductor nanoparticles (NPs), nanotubes, nanowires, and graphenes. There are mainly two types of device architectures for the two-terminal devices with NPs. One has a triple-layer structure with a metal film sandwiched between two organic semiconductor layers, and the other has a single polymer film blended with NPs. These devices can be electrically switched between two states with significant different resistances, i.e. the ‘ON’ and ‘OFF’ states. These render the devices important application as two-terminal non-volatile memory devices. The electrical behavior of these devices can be affected by the materials in the active layer and the electrodes. Though the mechanism for the electrical switches has been in argument, it is generally believed that the resistive switches are related to charge storage on the NPs. Resistive switches were also observed on crossbars formed by nanotubes, nanowires, and graphene ribbons. The resistive switches are due to nanoelectromechanical behavior of the materials. The Coulombic interaction of transient charges on the nanomaterials affects the configurable gap of the crossbars, which results into significant change in current through the crossbars. These nanoelectromechanical devices can be used as fast-response and high-density memory devices as well. PMID:22110862

  4. Atomistic simulations of electrochemical metallization cells: mechanisms of ultra-fast resistance switching in nanoscale devices

    NASA Astrophysics Data System (ADS)

    Onofrio, Nicolas; Guzman, David; Strachan, Alejandro

    2016-07-01

    We describe a new method that enables reactive molecular dynamics (MD) simulations of electrochemical processes and apply it to study electrochemical metallization cells (ECMs). The model, called EChemDID, extends the charge equilibration method to capture the effect of external electrochemical potential on partial atomic charges and describes its equilibration over connected metallic structures, on-the-fly, during the MD simulation. We use EChemDID to simulate resistance switching in nanoscale ECMs; these devices consist of an electroactive metal separated from an inactive electrode by an insulator and can be reversibly switched to a low-resistance state by the electrochemical formation of a conducting filament between electrodes. Our structures use Cu as the active electrode and SiO2 as the dielectric and have dimensions at the foreseen limit of scalability of the technology, with a dielectric thickness of approximately 1 nm. We explore the effect of device geometry on switching timescales and find that nanowires with an electroactive shell, where ions migrate towards a smaller inactive electrode core, result in faster switching than planar devices. We observe significant device-to-device variability in switching timescales and intermittent switching for these nanoscale devices. To characterize the evolution in the electronic structure of the dielectric as dissolved metallic ions switch the device, we perform density functional theory calculations on structures obtained from an EChemDID MD simulation. These results confirm the appearance of states around the Fermi energy as the metallic filament bridges the electrodes and show that the metallic ions and not defects in the dielectric contribute to the majority of those states.

  5. Atomistic simulations of electrochemical metallization cells: mechanisms of ultra-fast resistance switching in nanoscale devices.

    PubMed

    Onofrio, Nicolas; Guzman, David; Strachan, Alejandro

    2016-08-01

    We describe a new method that enables reactive molecular dynamics (MD) simulations of electrochemical processes and apply it to study electrochemical metallization cells (ECMs). The model, called EChemDID, extends the charge equilibration method to capture the effect of external electrochemical potential on partial atomic charges and describes its equilibration over connected metallic structures, on-the-fly, during the MD simulation. We use EChemDID to simulate resistance switching in nanoscale ECMs; these devices consist of an electroactive metal separated from an inactive electrode by an insulator and can be reversibly switched to a low-resistance state by the electrochemical formation of a conducting filament between electrodes. Our structures use Cu as the active electrode and SiO2 as the dielectric and have dimensions at the foreseen limit of scalability of the technology, with a dielectric thickness of approximately 1 nm. We explore the effect of device geometry on switching timescales and find that nanowires with an electroactive shell, where ions migrate towards a smaller inactive electrode core, result in faster switching than planar devices. We observe significant device-to-device variability in switching timescales and intermittent switching for these nanoscale devices. To characterize the evolution in the electronic structure of the dielectric as dissolved metallic ions switch the device, we perform density functional theory calculations on structures obtained from an EChemDID MD simulation. These results confirm the appearance of states around the Fermi energy as the metallic filament bridges the electrodes and show that the metallic ions and not defects in the dielectric contribute to the majority of those states. PMID:27218609

  6. Electrode with transparent series resistance for uniform switching of optical modulation devices

    DOEpatents

    Tench, D. Morgan; Cunningham, Michael A.; Kobrin, Paul H.

    2008-01-08

    Switching uniformity of an optical modulation device for controlling the propagation of electromagnetic radiation is improved by use of an electrode comprising an electrically resistive layer that is transparent to the radiation. The resistive layer is preferably an innerlayer of a wide-bandgap oxide sandwiched between layers of indium tin oxide or another transparent conductor, and may be of uniform thickness, or may be graded so as to provide further improvement in the switching uniformity. The electrode may be used with electrochromic and reversible electrochemical mirror (REM) smart window devices, as well as display devices based on various technologies.

  7. Development and fabrication of improved power transistor switches. [fabrication and manufacturing of semiconductor devices

    NASA Technical Reports Server (NTRS)

    Hower, P. L.; Chu, C. K.

    1976-01-01

    A new class of high-voltage power transistors has been achieved by adapting present interdigitated thyristor processing techniques to the fabrication of NPN Si transistors. Present devices are 2.3 cm in diameter. The electrical performance obtained is consistent with the predictions of an optimum design theory specifically developed for power switching transistors. The forward safe operating area of the experimental transistors shows a significant improvement over commercially available devices. The report describes device design, wafer processing, and various measurements which include dc characteristics, forward and reverse second breakdown limits, and switching times.

  8. Identification and characterization of localized conductivity changes in resistive switching devices

    NASA Astrophysics Data System (ADS)

    Lu, Yimeng

    Resistive switching devices based on Pt/SrZrO3/SrRuO 3 and Pt/TiO2/Pt heterostructures have been fabricated, tested and characterized. It is shown that the resistance switching in such structures is local, with only a small conducting filament forming within the functional oxide layer. The high power dissipation through the filament core results in significant Joule heating effect during electrical biasing. A local temperature increase exceeding 100°C is observed, using a thermographic imaging technique, at local conduction paths at power levels typical for electroformation and switching. High temperature results in physical changes of the electrode and oxide layer during electroformation and switching. The excessive changes are found to be in part due to excess transient current. By eliminating such excess transient current with new circuitry design, the associated physical damages to the electrodes are eliminated, and the fine structure of the switching filament is analyzed. The oxide layer in the switching filament experiences grain growth, apparently due to Joule heating effect. The originally amorphous TiO2 layer crystallizes into a polycrystalline layer consisting of anatase phase. Simulations of power dissipation in such structures suggest the temperature in the filament during switching is > 320 °C, which is a temperature sufficient for anatase formation. These results suggest that formation of specific conductive secondary phases in TiO2-based devices is not inherent to the switching process, but a by-product of excessive power dissipation.

  9. Formation and all-optical control of optical patterns in semiconductor microcavities

    NASA Astrophysics Data System (ADS)

    Binder, R.; Tsang, C. Y.; Tse, Y. C.; Luk, M. H.; Kwong, N. H.; Chan, Chris K. P.; Leung, P. T.; Lewandowski, P.; Schumacher, Stefan; Lafont, O.; Baudin, E.; Tignon, J.

    2016-05-01

    Semiconductor microcavities offer a unique way to combine transient all-optical manipulation of GaAs quantum wells with the benefits of structural advantages of microcavities. In these systems, exciton-polaritons have dispersion relations with very small effective masses. This has enabled prominent effects, for example polaritonic Bose condensation, but it can also be exploited for the design of all-optical communication devices. The latter involves non-equilibrium phase transitions in the spatial arrangement of exciton-polaritons. We consider the case of optical pumping with normal incidence, yielding a spatially homogeneous distribution of exciton-polaritons in optical cavities containing the quantum wells. Exciton-exciton interactions can trigger instabilities if certain threshold behavior requirements are met. Such instabilities can lead, for example, to the spontaneous formation of hexagonal polariton lattices (corresponding to six-spot patterns in the far field), or to rolls (corresponding to two-spot far field patterns). The competition among these patterns can be controlled to a certain degree by applying control beams. In this paper, we summarize the theory of pattern formation and election in microcavities and illustrate the switching between patterns via simulation results.

  10. Impacts of Co doping on ZnO transparent switching memory device characteristics

    NASA Astrophysics Data System (ADS)

    Simanjuntak, Firman Mangasa; Prasad, Om Kumar; Panda, Debashis; Lin, Chun-An; Tsai, Tsung-Ling; Wei, Kung-Hwa; Tseng, Tseung-Yuen

    2016-05-01

    The resistive switching characteristics of indium tin oxide (ITO)/Zn1-xCoxO/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnO device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated.

  11. Nonlinear Magnetic Dynamics and The Switching Phase Diagrams in Spintronic Devices

    NASA Astrophysics Data System (ADS)

    Yan, Shu

    Spin-transfer torque induced magnetic switching, by which the spin-polarized current transfers its magnetic moment to the ferromagnetic layer and changes its magnetization, holds great promise towards faster and smaller magnetic bits in data-storage applications due to the lower power consumption and better scalability. We propose an analytic approach which can be used to calculate the switching phase diagram of a nanomagnetic system in the presence of both magnetic field and spin-transfer torque in an exact fashion. This method is applied to the study of switching conditions for the uniaxial, single domain magnetic layers in different spin-transfer devices. In a spin valve with spin polarization collinear with the easy axis, we get a modified Stoner-Wohlfarth astroid which represents many of the features that have been found in experiment. It also shows a self-crossing boundary and demonstrates a region with three stable equilibria. We demonstrate that the region of stable equilibria with energy near the maximum can be reached only through a narrow bottleneck in the field space, which sets a stringent requirement for magnetic field alignment in the experiments. Switching diagrams are then calculated for the setups with magnetic field not perfectly aligned with the easy axis. In a ferromagnet-heavy-metal bilayer device with strong spin Hall effect, the in plane current becomes spin-polarized and transfers its magnetic moment to the ferromagnetic layer by diffusion. The three-dimensional asymmetric phase diagram is calculated. In the case that the external field is confined in the vertical plane defined by the direction of the current and the easy axis, the spin-transfer torque shifts the conventional in-plane (IP) equilibria within the same plane, and also creates two out-of-plane (OOP) equilibria, one of which can be stable. The threshold switching currents for IP switching and OOP switching are discussed. We also address the magnetic switching processes. Damping

  12. Electrode-induced digital-to-analog resistive switching in TaO x -based RRAM devices

    NASA Astrophysics Data System (ADS)

    Li, Xinyi; Wu, Huaqiang; Gao, Bin; Wu, Wei; Wu, Dong; Deng, Ning; Cai, Jian; Qian, He

    2016-07-01

    In RRAM devices, electrodes play a significant role during the switching process. In this paper, different top electrodes are used for TaO y /Ta2O5‑x /AlO σ triple-oxide-layer devices. Top electrode-induced digital resistive switching to analog resistive switching was observed. For Pt top electrode (TE) devices, abrupt digital resistive switching behavior was observed, while Al TE devices showed gradual analog resistive switching behavior. Devices with various AlO σ thicknesses and sizes were fabricated and characterized to evaluate the reliability of the analog resistive switching. The physical mechanisms responsible for this electrode-induced resistive switching behavior were discussed.

  13. Electrode-induced digital-to-analog resistive switching in TaO x -based RRAM devices.

    PubMed

    Li, Xinyi; Wu, Huaqiang; Bin Gao; Wu, Wei; Wu, Dong; Deng, Ning; Cai, Jian; Qian, He

    2016-07-29

    In RRAM devices, electrodes play a significant role during the switching process. In this paper, different top electrodes are used for TaO y /Ta2O5-x /AlO σ triple-oxide-layer devices. Top electrode-induced digital resistive switching to analog resistive switching was observed. For Pt top electrode (TE) devices, abrupt digital resistive switching behavior was observed, while Al TE devices showed gradual analog resistive switching behavior. Devices with various AlO σ thicknesses and sizes were fabricated and characterized to evaluate the reliability of the analog resistive switching. The physical mechanisms responsible for this electrode-induced resistive switching behavior were discussed. PMID:27302281

  14. All-Optical Terahertz Optical Asymmetric Demultiplexer (toad) Based Binary Comparator:. a Proposal

    NASA Astrophysics Data System (ADS)

    Chattopadhyay, Tanay

    Comparator determines whether a number is greater than, equals to or less than another number. It plays a significant role in fast central processing unit in all-optical scheme. In all-optical scheme here 1-bit binary comparator is proposed and described by Terahertz Optical Asymmetric Demultiplexer (TOAD) based interferometric switch. Simulation result by Mathcad-7 is also given. Cascading technique of building up the n-bit binary comparator with this 1-bit comparator block is also proposed here.

  15. Coherent spin-transfer precession switching in orthogonal spin-torque devices

    NASA Astrophysics Data System (ADS)

    Ryan, Colm; Rowlands, Graham; Pinna, Daniele; Ye, Li; Rehm, Laura; Sluka, Volker; Kent, Andy; Ohki, Thomas

    We present experimental results in concert with macrospin simulations of the switching characteristics of orthogonal spin-transfer devices incorporating an out-of-plane magnetized polarizing layer and an in-plane magnetized spin valve device at cryogenic temperatures. Switching at 3.4K between parallel and anti-parallel spin-valve states is investigated for current pulses with varying durations from 0.1 to 1.4ns to observe the averaged response of the time dependent dynamics of the spin-transfer induced precession of the magnetization. We demonstrate high speed switching at short pulse lengths, down to 100ps, and also observe ensemble decoherence effects with longer pulses. The results show that even at cryogenic temperatures finite temperature noise is still important in the dynamics of precessional switching.

  16. All-optical logic gates based on cross phase modulation effect in a phase-shifted grating.

    PubMed

    Li, Qiliang; Song, Junfeng; Chen, Xin; Bi, Meihua; Hu, Miao; Li, Shuqin

    2016-09-01

    In this paper, we perform a theoretical study of the all-optical logic gates based on the techniques of cross phase modulation (XPM) in a phase-shifted grating. Here the pumps are used to control the switching of a weak continuous wave (cw). In order to understand the transferring process of the information from the pump light to the cw light, we first study the switching characteristic of the device. Then, by changing the combination between two pumps, in a fiber grating with zero phase shift we have realized NOT, AND, and NAND gates, and in a phase-shifted grating with the phase shift π, the other various logic operations can be realized such as NAND gates and OR gates; when selecting Δφ=3/2π, we can realize XOR gates and XNOR gates. Thus the change of the phase shift of the phase-shifted grating will yield various logic gates. PMID:27607262

  17. A physical model of switching dynamics in tantalum oxide memristive devices

    NASA Astrophysics Data System (ADS)

    Mickel, Patrick R.; Lohn, Andrew J.; Joon Choi, Byung; Joshua Yang, J.; Zhang, Min-Xian; Marinella, Matthew J.; James, Conrad D.; Stanley Williams, R.

    2013-06-01

    We present resistive switching model for TaOx memristors, which demonstrates that the radius of a tantalum rich conducting filament is the state variable controlling resistance. The model tracks the flux of individual oxygen ions and permits the derivation and solving of dynamical and static state equations. Model predictions for ON/OFF switching were tested experimentally with TaOx devices and shown to be in close quantitative agreement, including the experimentally observed transition from linear to non-linear conduction between RON and ROFF. This work presents a quantitative model of state variable dynamics in TaOx memristors, with direct comparison to high-speed resistive switching data.

  18. Protection relay of phase-shifting device with thyristor switch for high voltage power transmission lines

    NASA Astrophysics Data System (ADS)

    Lachugin, V. F.; Panfilov, D. I.; Akhmetov, I. M.; Astashev, M. G.; Shevelev, A. V.

    2014-12-01

    Problems of functioning of differential current protection systems of phase shifting devices (PSD) with mechanically changed coefficient of transformation of shunt transformer are analyzed. Requirements for devices of protection of PSD with thyristor switch are formulated. Based on use of nonlinear models of series-wound and shunt transformers of PSD modes of operation of major protection during PSD, switching to zero load operation and to operation under load and during short circuit operation were studied for testing PSD with failures. Use of the principle of duplicating by devices of differential current protection (with realization of functions of breaking) of failures of separate pares of PSD with thyristor switch was substantiated. To ensure protection sensitivity to the shunt transformer winding short circuit, in particular, to a short circuit that is not implemented in the current differential protection for PSD with mechanical switch, the differential current protection reacting to the amount of primary ampere-turns of high-voltage and low-voltage winding of this transformer was designed. Studies have shown that the use of differential current cutoff instead of overcurrent protection for the shunt transformer wndings allows one to provide the sensitivity during thyristor failure with the formation of a short circuit. The results of simulation mode for the PSD with switch thyristor designed to be installed as switching point of Voskhod-Tatarskaya-Barabinsk 220 kV transmission line point out the efficiency of the developed solutions that ensure reliable functioning of the PSD.

  19. Cryogenic switching of inductive loads using semiconductor devices

    SciTech Connect

    Boudreaux, R.R.; Nelms, R.M.

    1998-07-01

    A cryogenic inductive energy storage system may be utilized to supply the pulse power requirements of some future electric propulsion systems for deep space vehicles. Discussed in this paper is the operation of one inductive storage approach at temperatures down to {minus}184 C. Three different semiconductor technologies (IGBTs, MOSFETs, and MCTs) are evaluated at low temperatures to determine their potential application as an opening switch in a cryogenic inductive energy storage system. Low temperature tests indicate that an IGBT protected by an transient voltage suppressor should be employed in this inductive storage approach.

  20. All-optical arithmetic unit with the help of terahertz-optical-asymmetric-demultiplexer-based tree architecture

    NASA Astrophysics Data System (ADS)

    Gayen, Dilip Kumar; Nath Roy, Jitendra

    2008-03-01

    An all-optical arithmetic unit with the help of terahertz-optical-asymmetric-demultiplexer (TOAD)-based tree architecture is proposed. We describe the all-optical arithmetic unit by using a set of all-optical multiplexer, all-optical full-adder, and optical switch. The all-optical arithmetic unit can be used to perform a fast central processor unit using optical hardware components. We have tried to exploit the advantages of both optical tree architecture and TOAD-based switch to design an integrated all-optical circuit that can perform binary addition, addition with carry, subtract with borrow, subtract (2's complement), double, increment, decrement, and transfer operations.

  1. Real-time device-scale imaging of conducting filament dynamics in resistive switching materials

    PubMed Central

    Lee, Keundong; Tchoe, Youngbin; Yoon, Hosang; Baek, Hyeonjun; Chung, Kunook; Lee, Sangik; Yoon, Chansoo; Park, Bae Ho; Yi, Gyu-Chul

    2016-01-01

    ReRAM is a compelling candidate for next-generation non-volatile memory owing to its various advantages. However, fluctuation of operation parameters are critical weakness occurring failures in ‘reading’ and ‘writing’ operations. To enhance the stability, it is important to understand the mechanism of the devices. Although numerous studies have been conducted using AFM or TEM, the understanding of the device operation is still limited due to the destructive nature and/or limited imaging range of the previous methods. Here, we propose a new hybrid device composed of ReRAM and LED enabling us to monitor the conducting filament (CF) configuration on the device scale during resistive switching. We directly observe the change in CF configuration across the whole device area through light emission from our hybrid device. In contrast to former studies, we found that minor CFs were formed earlier than major CF contributing to the resistive switching. Moreover, we investigated the substitution of a stressed major CF with a fresh minor CF when large fluctuation of operation voltage appeared after more than 50 times of resistive switching in atmospheric condition. Our results present an advancement in the understanding of ReRAM operation mechanism, and a step toward stabilizing the fluctuations in ReRAM switching parameters. PMID:27271792

  2. Real-time device-scale imaging of conducting filament dynamics in resistive switching materials

    NASA Astrophysics Data System (ADS)

    Lee, Keundong; Tchoe, Youngbin; Yoon, Hosang; Baek, Hyeonjun; Chung, Kunook; Lee, Sangik; Yoon, Chansoo; Park, Bae Ho; Yi, Gyu-Chul

    2016-06-01

    ReRAM is a compelling candidate for next-generation non-volatile memory owing to its various advantages. However, fluctuation of operation parameters are critical weakness occurring failures in ‘reading’ and ‘writing’ operations. To enhance the stability, it is important to understand the mechanism of the devices. Although numerous studies have been conducted using AFM or TEM, the understanding of the device operation is still limited due to the destructive nature and/or limited imaging range of the previous methods. Here, we propose a new hybrid device composed of ReRAM and LED enabling us to monitor the conducting filament (CF) configuration on the device scale during resistive switching. We directly observe the change in CF configuration across the whole device area through light emission from our hybrid device. In contrast to former studies, we found that minor CFs were formed earlier than major CF contributing to the resistive switching. Moreover, we investigated the substitution of a stressed major CF with a fresh minor CF when large fluctuation of operation voltage appeared after more than 50 times of resistive switching in atmospheric condition. Our results present an advancement in the understanding of ReRAM operation mechanism, and a step toward stabilizing the fluctuations in ReRAM switching parameters.

  3. Real-time device-scale imaging of conducting filament dynamics in resistive switching materials.

    PubMed

    Lee, Keundong; Tchoe, Youngbin; Yoon, Hosang; Baek, Hyeonjun; Chung, Kunook; Lee, Sangik; Yoon, Chansoo; Park, Bae Ho; Yi, Gyu-Chul

    2016-01-01

    ReRAM is a compelling candidate for next-generation non-volatile memory owing to its various advantages. However, fluctuation of operation parameters are critical weakness occurring failures in 'reading' and 'writing' operations. To enhance the stability, it is important to understand the mechanism of the devices. Although numerous studies have been conducted using AFM or TEM, the understanding of the device operation is still limited due to the destructive nature and/or limited imaging range of the previous methods. Here, we propose a new hybrid device composed of ReRAM and LED enabling us to monitor the conducting filament (CF) configuration on the device scale during resistive switching. We directly observe the change in CF configuration across the whole device area through light emission from our hybrid device. In contrast to former studies, we found that minor CFs were formed earlier than major CF contributing to the resistive switching. Moreover, we investigated the substitution of a stressed major CF with a fresh minor CF when large fluctuation of operation voltage appeared after more than 50 times of resistive switching in atmospheric condition. Our results present an advancement in the understanding of ReRAM operation mechanism, and a step toward stabilizing the fluctuations in ReRAM switching parameters. PMID:27271792

  4. Resistive switching characteristics of HfO2-based memory devices on flexible plastics.

    PubMed

    Han, Yong; Cho, Kyoungah; Park, Sukhyung; Kim, Sangsig

    2014-11-01

    In this study, we examine the characteristics of HfO2-based resistive switching random access memory (ReRAM) devices on flexible plastics. The Pt/HfO2/Au ReRAM devices exhibit the unipolar resistive switching behaviors caused by the conducting filaments. From the Auger depth profiles of the HfO2 thin film, it is confirmed that the relatively lower oxygen content in the interface of the bottom electrode is responsible for the resistive switching by oxygen vacancies. And the unipolar resistive switching behaviors are analyzed from the C-V characteristics in which negative and positive capacitances are measured in the low-resistance state and the high-resistance state, respectively. The devices have a high on/off ratio of 10(4) and the excellent retention properties even after a continuous bending test of two thousand cycles. The correlation between the device size and the memory characteristics is investigated as well. A relatively smaller-sized device having a higher on/off ratio operates at a higher voltage than a relatively larger-sized device. PMID:25958498

  5. High speed switching in quantum Dot/Ti-TiOx nonvolatile memory device

    NASA Astrophysics Data System (ADS)

    Kannan, V.; Kim, Hyun-Seok; Park, Hyun-Chang

    2016-03-01

    We report a Ti-TiOx/CdSe-ZnS core-shell quantum dot based bipolar nonvolatile resistive memory device. The device exhibits an ON/OFF ratio of 100 and is reproducible. The memory device showed good retention characteristics under stress and excellent stability even after 100,000 cycles of switching operation. The switching speed measured was around 15 ns. The devices are solution processed at room temperature in ambient atmosphere. The operating mechanism is discussed based on charge trapping in quantum dots resulting in the Coulomb blockade effect with a ZnS shell layer and metal-oxide layer acting as the barrier to confine the trapped charges. The proposed mechanism is validated by a three terminal device designed exclusively for this purpose. [Figure not available: see fulltext.

  6. All-Optical Nanomechanical Heat Engine

    NASA Astrophysics Data System (ADS)

    Dechant, Andreas; Kiesel, Nikolai; Lutz, Eric

    2015-05-01

    We propose and theoretically investigate a nanomechanical heat engine. We show how a levitated nanoparticle in an optical trap inside a cavity can be used to realize a Stirling cycle in the underdamped regime. The all-optical approach enables fast and flexible control of all thermodynamical parameters and the efficient optimization of the performance of the engine. We develop a systematic optimization procedure to determine optimal driving protocols. Further, we perform numerical simulations with realistic parameters and evaluate the maximum power and the corresponding efficiency.

  7. All-optical nanomechanical heat engine.

    PubMed

    Dechant, Andreas; Kiesel, Nikolai; Lutz, Eric

    2015-05-01

    We propose and theoretically investigate a nanomechanical heat engine. We show how a levitated nanoparticle in an optical trap inside a cavity can be used to realize a Stirling cycle in the underdamped regime. The all-optical approach enables fast and flexible control of all thermodynamical parameters and the efficient optimization of the performance of the engine. We develop a systematic optimization procedure to determine optimal driving protocols. Further, we perform numerical simulations with realistic parameters and evaluate the maximum power and the corresponding efficiency. PMID:26001001

  8. Simple novel all-optical wavelength converter

    NASA Astrophysics Data System (ADS)

    Chen, Zhixin

    2009-02-01

    Based on Sagnac interferometric structure, a simple novel ultrafast scheme for an all-optical wavelength converter is proposed. The operations of this scheme with a 80-Gbits/s return to zero (RZ) pseudorandom bit sequence (PRBS) are simulated correctly with an output extinction ratio of more than 17.2 dB. Through numerical analysis, by comparison of the performance at 40- and 80-Gbits/s operation, the operating characteristics of the scheme are illustrated. Furthermore, the carrier recovery time of the semiconductor amplifier (SOA) is no longer a crucial parameter to restrict the operation speed of this scheme.

  9. All optical binary delta-sigma modulator

    NASA Astrophysics Data System (ADS)

    Sayeh, Mohammad R.; Siahmakoun, Azad

    2005-09-01

    This paper describes a novel A/D converter called "Binary Delta-Sigma Modulator" (BDSM) which operates only with nonnegative signal with positive feedback and binary threshold. This important modification to the conventional delta-sigma modulator makes the high-speed (>100GHz) all-optical implementation possible. It has also the capability to modify its own sampling frequency as well as its input dynamic range. This adaptive feature helps designers to optimize the system performance under highly noisy environment and also manage the power consumption of the A/D converters.

  10. Stochastic switching of TiO2-based memristive devices with identical initial memory states

    PubMed Central

    2014-01-01

    In this work, we show that identical TiO2-based memristive devices that possess the same initial resistive states are only phenomenologically similar as their internal structures may vary significantly, which could render quite dissimilar switching dynamics. We experimentally demonstrated that the resistive switching of practical devices with similar initial states could occur at different programming stimuli cycles. We argue that similar memory states can be transcribed via numerous distinct active core states through the dissimilar reduced TiO2-x filamentary distributions. Our hypothesis was finally verified via simulated results of the memory state evolution, by taking into account dissimilar initial filamentary distribution. PMID:24994953

  11. Switching dynamics of thin film ferroelectric devices - a massively parallel phase field study

    NASA Astrophysics Data System (ADS)

    Ashraf, Md. Khalid

    In this thesis, we investigate the switching dynamics in thin film ferroelectrics. Ferroelectric materials are of inherent interest for low power and multi-functional devices. However, possible device applications of these materials have been limited due to the poorly understood electromagnetic and mechanical response at the nanoscale in arbitrary device structures. The difficulty in understanding switching dynamics mainly arises from the presence of features at multiple length scales and the nonlinearity associated with the strongly coupled states. For example, in a ferroelectric material, the domain walls are of nm size whereas the domain pattern forms at micron scale. The switching is determined by coupled chemical, electrostatic, mechanical and thermal interactions. Thus computational understanding of switching dynamics in thin film ferroelectrics and a direct comparison with experiment poses a significant numerical challenge. We have developed a phase field model that describes the physics of polarization dynamics at the microscopic scale. A number of efficient numerical methods have been applied for achieving massive parallelization of all the calculation steps. Conformally mapped elements, node wise assembly and prevention of dynamic loading minimized the communication between processors and increased the parallelization efficiency. With these improvements, we have reached the experimental scale - a significant step forward compared to the state of the art thin film ferroelectric switching dynamics models. Using this model, we elucidated the switching dynamics on multiple surfaces of the multiferroic material BFO. We also calculated the switching energy of scaled BFO islands. Finally, we studied the interaction of domain wall propagation with misfit dislocations in the thin film. We believe that the model will be useful in understanding the switching dynamics in many different experimental setups incorporating thin film ferroelectrics.

  12. Ultra high voltage MOS controlled 4H-SiC power switching devices

    NASA Astrophysics Data System (ADS)

    Ryu, S.; Capell, C.; Van Brunt, E.; Jonas, C.; O'Loughlin, M.; Clayton, J.; Lam, K.; Pala, V.; Hull, B.; Lemma, Y.; Lichtenwalner, D.; Zhang, Q. J.; Richmond, J.; Butler, P.; Grider, D.; Casady, J.; Allen, S.; Palmour, J.; Hinojosa, M.; Tipton, C. W.; Scozzie, C.

    2015-08-01

    Ultra high voltage (UHV, >15 kV) 4H-silicon carbide (SiC) power devices have the potential to significantly improve the system performance, reliability, and cost of energy conversion systems by providing reduced part count, simplified circuit topology, and reduced switching losses. In this paper, we compare the two MOS based UHV 4H-SiC power switching devices; 15 kV 4H-SiC MOSFETs and 15 kV 4H-SiC n-IGBTs. The 15 kV 4H-SiC MOSFET shows a specific on-resistance of 204 mΩ cm2 at 25 °C, which increased to 570 mΩ cm2 at 150 °C. The 15 kV 4H-SiC MOSFET provides low, temperature-independent, switching losses which makes the device more attractive for applications that require higher switching frequencies. The 15 kV 4H-SiC n-IGBT shows a significantly lower forward voltage drop (VF), along with reasonable switching performance, which make it a very attractive device for high voltage applications with lower switching frequency requirements. An electrothermal analysis showed that the 15 kV 4H-SiC n-IGBT outperforms the 15 kV 4H-SiC MOSFET for applications with switching frequencies of less than 5 kHz. It was also shown that the use of a carrier storage layer (CSL) can significantly improve the conduction performance of the 15 kV 4H-SiC n-IGBTs.

  13. In-fiber all-optical fractional differentiator.

    PubMed

    Cuadrado-Laborde, C; Andrés, M V

    2009-03-15

    We demonstrate that an asymmetrical pi phase-shifted fiber Bragg grating operated in reflection can provide the required spectral response for implementing an all-optical fractional differentiator. There are different (but equivalent) ways to design it, e.g., by using different gratings lengths and keeping the same index modulation depth at both sides of the pi phase shift, or vice versa. Analytical expressions were found relating the fractional differentiator order with the grating parameters. The device shows a good accuracy calculating the fractional time derivatives of the complex field of an arbitrary input optical waveform. The introduced concept is supported by numerical simulations. PMID:19282948

  14. Realization of an all optical exciton-polariton router

    NASA Astrophysics Data System (ADS)

    Marsault, Félix; Nguyen, Hai Son; Tanese, Dimitrii; Lemaître, Aristide; Galopin, Elisabeth; Sagnes, Isabelle; Amo, Alberto; Bloch, Jacqueline

    2015-11-01

    We report on the experimental realization of an all optical router for exciton-polaritons. This device is based on the design proposed by Flayac and Savenko [Appl. Phys. Lett. 103, 201105 (2013)], in which a zero-dimensional island is connected through tunnel barriers to two periodically modulated wires of different periods. Selective transmission of polaritons injected in the island, into either of the two wires, is achieved by tuning the energy of the island state across the band structure of the modulated wires. We demonstrate routing of ps polariton pulses using an optical control beam which controls the energy of the island quantum states, thanks to polariton-exciton interactions.

  15. Realization of an all optical exciton-polariton router

    SciTech Connect

    Marsault, Félix; Nguyen, Hai Son; Tanese, Dimitrii; Lemaître, Aristide; Galopin, Elisabeth; Sagnes, Isabelle; Amo, Alberto

    2015-11-16

    We report on the experimental realization of an all optical router for exciton-polaritons. This device is based on the design proposed by Flayac and Savenko [Appl. Phys. Lett. 103, 201105 (2013)], in which a zero-dimensional island is connected through tunnel barriers to two periodically modulated wires of different periods. Selective transmission of polaritons injected in the island, into either of the two wires, is achieved by tuning the energy of the island state across the band structure of the modulated wires. We demonstrate routing of ps polariton pulses using an optical control beam which controls the energy of the island quantum states, thanks to polariton-exciton interactions.

  16. Resistive switching behavior of reduced graphene oxide memory cells for low power nonvolatile device application

    PubMed Central

    Pradhan, Sangram K.; Xiao, Bo; Mishra, Saswat; Killam, Alex; Pradhan, Aswini K.

    2016-01-01

    Graphene Oxide (GO) based low cost flexible electronics and memory cell have recently attracted more attention for the fabrication of emerging electronic devices. As a suitable candidate for resistive random access memory technology, reduced graphene oxide (RGO) can be widely used for non-volatile switching memory applications because of its large surface area, excellent scalability, retention, and endurance properties. We demonstrated that the fabricated metal/RGO/metal memory device exhibited excellent switching characteristics, with on/off ratio of two orders of magnitude and operated threshold switching voltage of less than 1 V. The studies on different cell diameter, thickness, scan voltages and period of time corroborate the reliability of the device as resistive random access memory. The microscopic origin of switching operation is governed by the establishment of conducting filaments due to the interface amorphous layer rupturing and the movement of oxygen in the GO layer. This interesting experimental finding indicates that device made up of thermally reduced GO shows more reliability for its use in next generation electronics devices. PMID:27240537

  17. Interfacial behavior of resistive switching in ITO-PVK-Al WORM memory devices

    NASA Astrophysics Data System (ADS)

    Whitcher, T. J.; Woon, K. L.; Wong, W. S.; Chanlek, N.; Nakajima, H.; Saisopa, T.; Songsiriritthigul, P.

    2016-02-01

    Understanding the mechanism of resistive switching in a memory device is fundamental in order to improve device performance. The mechanism of current switching in a basic organic write-once read-many (WORM) memory device is investigated by determining the energy level alignments of indium tin oxide (ITO), poly(9-vinylcarbazole) (PVK) and aluminum (Al) using x-ray and ultraviolet photoelectron spectroscopy, current-voltage characterization and Auger depth profiling. The current switching mechanism was determined to be controlled by the interface between the ITO and the PVK. The electric field applied across the device causes the ITO from the uneven surface of the anode to form metallic filaments through the PVK, causing a shorting effect within the device leading to increased conduction. This was found to be independent of the PVK thickness, although the switch-on voltage was non-linearly dependent on the thickness. The formation of these filaments also caused the destruction of the interfacial dipole at the PVK-Al interface.

  18. Resistive switching behavior of reduced graphene oxide memory cells for low power nonvolatile device application

    NASA Astrophysics Data System (ADS)

    Pradhan, Sangram K.; Xiao, Bo; Mishra, Saswat; Killam, Alex; Pradhan, Aswini K.

    2016-05-01

    Graphene Oxide (GO) based low cost flexible electronics and memory cell have recently attracted more attention for the fabrication of emerging electronic devices. As a suitable candidate for resistive random access memory technology, reduced graphene oxide (RGO) can be widely used for non-volatile switching memory applications because of its large surface area, excellent scalability, retention, and endurance properties. We demonstrated that the fabricated metal/RGO/metal memory device exhibited excellent switching characteristics, with on/off ratio of two orders of magnitude and operated threshold switching voltage of less than 1 V. The studies on different cell diameter, thickness, scan voltages and period of time corroborate the reliability of the device as resistive random access memory. The microscopic origin of switching operation is governed by the establishment of conducting filaments due to the interface amorphous layer rupturing and the movement of oxygen in the GO layer. This interesting experimental finding indicates that device made up of thermally reduced GO shows more reliability for its use in next generation electronics devices.

  19. Resistive switching behavior of reduced graphene oxide memory cells for low power nonvolatile device application.

    PubMed

    Pradhan, Sangram K; Xiao, Bo; Mishra, Saswat; Killam, Alex; Pradhan, Aswini K

    2016-01-01

    Graphene Oxide (GO) based low cost flexible electronics and memory cell have recently attracted more attention for the fabrication of emerging electronic devices. As a suitable candidate for resistive random access memory technology, reduced graphene oxide (RGO) can be widely used for non-volatile switching memory applications because of its large surface area, excellent scalability, retention, and endurance properties. We demonstrated that the fabricated metal/RGO/metal memory device exhibited excellent switching characteristics, with on/off ratio of two orders of magnitude and operated threshold switching voltage of less than 1 V. The studies on different cell diameter, thickness, scan voltages and period of time corroborate the reliability of the device as resistive random access memory. The microscopic origin of switching operation is governed by the establishment of conducting filaments due to the interface amorphous layer rupturing and the movement of oxygen in the GO layer. This interesting experimental finding indicates that device made up of thermally reduced GO shows more reliability for its use in next generation electronics devices. PMID:27240537

  20. Nanophotonic technologies for innovative all- optical signal processor using photonic crystals and quantum dots

    SciTech Connect

    Sugimoto, Y.; Ikeda, N.; Ozaki, N.; Watanabe, Y.; Asakawa, K.; Ohkouchi, S.; Nakamura, S.

    2009-06-29

    GaAs-based two-dimensional photonic crystal (2DPC) slab waveguides (WGs) and InAs quantum dots (QDs) were developed for key photonic device structures in the future. An ultrasmall and ultrafast symmetrical Mach-Zehnder (SMZ)-type all-optical switch (PC-SMZ) and an optical flip-flop device (PC-FF) have been developed based on these nanophotonic structures for an ultrafast digital photonic network. To realize these devices, two important techniques were developed. One is a new simulation method, i.e., topology optimization method of 2DPC WGs with wide/flat bandwidth, high transmittance and low reflectivity. Another is a new selective-area-growth method, i.e., metal-mask molecular beam epitaxy method of InAs QDs. This technique contributes to achieving high-density and highly uniform InAs QDs in a desired area such as an optical nonlinearity-induced phase shift arm in the PC-FF. Furthermore, as a unique site-controlled QD technique, a nano-jet probe method is also developed for positioning QDs at the centre of the optical nonlinearity-induced phase shift arm.

  1. Self-organized plasmonic metasurfaces for all-optical modulation

    NASA Astrophysics Data System (ADS)

    Della Valle, G.; Polli, D.; Biagioni, P.; Martella, C.; Giordano, M. C.; Finazzi, M.; Longhi, S.; Duò, L.; Cerullo, G.; Buatier de Mongeot, F.

    2015-06-01

    We experimentally demonstrate a self-organized metasurface with a polarization dependent transmittance that can be dynamically controlled by optical means. The configuration consists of tightly packed plasmonic nanowires with a large dispersion of width and height produced by the defocused ion-beam sputtering of a thin gold film supported on a silica glass. Our results are quantitatively interpreted according to a theoretical model based on the thermomodulational nonlinearity of gold and a finite-element numerical analysis of the absorption and scattering cross-sections of the nanowires. We found that the polarization sensitivity of the metasurface can be strongly enhanced by pumping with ultrashort laser pulses, leading to potential applications in ultrafast all-optical modulation and switching of light.

  2. Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices

    SciTech Connect

    Kim, Myung Ju; Jeon, Dong Su; Park, Ju Hyun; Kim, Tae Geun

    2015-05-18

    This paper reports the bipolar resistive switching characteristics of TaN{sub x}-based resistive random access memory (ReRAM). The conduction mechanism is explained by formation and rupture of conductive filaments caused by migration of nitrogen ions and vacancies; this mechanism is in good agreement with either Ohmic conduction or the Poole-Frenkel emission model. The devices exhibit that the reset voltage varies from −0.82 V to −0.62 V, whereas the set voltage ranges from 1.01 V to 1.30 V for 120 DC sweep cycles. In terms of reliability, the devices exhibit good retention (>10{sup 5 }s) and pulse-switching endurance (>10{sup 6} cycles) properties. These results indicate that TaN{sub x}-based ReRAM devices have a potential for future nonvolatile memory devices.

  3. All-optical OFDM network coding scheme for all-optical virtual private communication in PON

    NASA Astrophysics Data System (ADS)

    Li, Lijun; Gu, Rentao; Ji, Yuefeng; Bai, Lin; Huang, Zhitong

    2014-03-01

    A novel optical orthogonal frequency division multiplexing (OFDM) network coding scheme is proposed over passive optical network (PON) system. The proposed scheme for all-optical virtual private network (VPN) does not only improve transmission efficiency, but also realize full-duplex communication mode in a single fiber. Compared with the traditional all-optical VPN architectures, the all-optical OFDM network coding scheme can support higher speed, more flexible bandwidth allocation, and higher spectrum efficiency. In order to reduce the difficulty of alignment for encoding operation between inter-communication traffic, the width of OFDM subcarrier pulse is stretched in our proposed scheme. The feasibility of all-optical OFDM network coding scheme for VPN is verified, and the relevant simulation results show that the full-duplex inter-communication traffic stream can be transmitted successfully. Furthermore, the tolerance of misalignment existing in inter-ONUs traffic is investigated and analyzed for all-optical encoding operation, and the difficulty of pulse alignment is proved to be lower.

  4. Wireless electro-optic switching network for optical fiber sensor array using MEMS-IDT devices

    NASA Astrophysics Data System (ADS)

    Varadan, Vijay K.; Varadan, Vasundara V.

    1999-09-01

    Optical fiber arrays have been proposed for signal paths in various civilian and military controls as a means of offering advanced sensing functions not available in electronic systems. To implement optic fiber sensors on various control systems, a proper electro-optic architecture (EOA) with a bar- coded electro-optical switch needs to be studied. In this paper, a design of such EO switch is proposed which can be operated remotely. Lithium Niobate is chosen as the EO material. The MEMS-IDT device is designed with Lithium Niobate as a substrate with IDT and a set of floating reflectors. The reflectors can be programmable and thus a bar-coded switch can be fabricated. The electrostatic field between the reflectors and the Lithium Niobate serves as the fast acting switch in this application.

  5. Determinants of Method Switching among Social Franchise Clients Who Discontinued the Use of Intrauterine Contraceptive Device

    PubMed Central

    Hameed, Waqas; Azmat, Syed Khurram; Ali, Moazzam; Hussain, Wajahat; Mustafa, Ghulam; Ishaque, Muhammad; Ali, Safdar; Ahmed, Aftab; Temmerman, Marleen

    2015-01-01

    Introduction. Women who do not switch to alternate methods after contraceptive discontinuation, for reasons other than the desire to get pregnant or not needing it, are at obvious risk for unplanned pregnancies or unwanted births. This paper examines the factors that influence women to switch from Intrauterine Contraceptive Device (IUCD) to other methods instead of terminating contraceptive usage altogether. Methods. The data used for this study comes from a larger cross-sectional survey conducted in nine (9) randomly selected districts of Sindh and Punjab provinces of Pakistan, during January 2011. Using Stata 11.2, we analyzed data on 333 women, who reported the removal of IUCDs due to reasons other than the desire to get pregnant. Results. We found that 39.9% of the women do not switch to another method of contraception within one month after IUCD discontinuation. Use of contraception before IUCD insertion increases the odds for method switching by 2.26 times after removal. Similarly, postremoval follow-up by community health worker doubles (OR = 2.0) the chances of method switching. Compared with women who received free IUCD service (via voucher scheme), the method switching is 2.01 times higher among women who had paid for IUCD insertion. Conclusion. To increase the likelihood of method switching among IUCD discontinuers this study emphasizes the need for postremoval client counseling, follow-up by healthcare provider, improved choices to a wider range of contraceptives for poor clients, and user satisfaction. PMID:26576454

  6. Compact all-optical interferometric logic gates based on one-dimensional metal-insulator-metal structures

    NASA Astrophysics Data System (ADS)

    Bian, Yusheng; Gong, Qihuang

    2014-02-01

    The whole set of fundamental all-optical logic gates is realized theoretically using a multi-channel configuration based on one-dimensional (1D) metal-insulator-metal (MIM) structures by leveraging the linear interference between surface plasmon polariton modes. The working principle and conditions for different logic functions are analyzed and demonstrated numerically by means of the finite element method. In contrast to most of the previous studies that require more than one type of configuration to achieve different logic functions, a single geometry with fixed physical dimensions can realize all fundamental functions in our case studies. It is shown that by switching the optical signals to different input channels, the presented device can realize simple logic functions such as OR, AND and XOR. By adding signal in the control channel, more functions including NOT, XNOR, NAND and NOR can be implemented. For these considered logic functions, high intensity contrast ratios between Boolean logic states "1" and "0" can be achieved at the telecom wavelength. The presented all-optical logic device is simple, compact and efficient. Moreover, the proposed scheme can be applied to many other nano-photonic logic devices as well, thereby potentially offering useful guidelines for their designs and further applications in on-chip optical computing and optical interconnection networks.

  7. Infrared spectroscopic characterization of [2]rotaxane molecular switch tunnel junction devices.

    PubMed

    DeIonno, Erica; Tseng, Hsian-Rong; Harvey, Desmond D; Stoddart, J Fraser; Heath, James R

    2006-04-20

    Langmuir-Blodgett monolayers of a bistable [2]rotaxane were prepared at packing densities of 118, 73, and 54 A(2)/molecule. The monolayers were both characterized via infrared spectroscopy before and after evaporation of a 2 nm film of titanium and incorporated into molecular switch tunnel junction devices. The study suggests that the evaporation process primarily affects portions of the molecule exposed to the metal atom source. Thus, in tightly packed monolayers (73 and 54 A(2)/molecule), only the portions of the [2]rotaxane that are present at the molecule/air interface are clearly affected, leaving key functionality necessary for switching intact. Monolayers transferred at a lower pressure (118 A(2)/molecule) exhibit nonspecific damage and poor switching behavior following Ti deposition. These results indicate that tightly packed monolayers and sacrificial functionality displayed at the molecule/air interface are important design principles for molecular electronic devices. PMID:16610848

  8. Rapid switching in electrochromic devices based on complementary conducting polymer films

    SciTech Connect

    Sapp, S.A.; Sotzing, G.A.; Reddinger, J.L.; Reynolds, J.R.

    1996-10-01

    The search for stable, rapid switching electrochromic materials that are easy and inexpensive to process has become the focus of a great deal of research in the past few years. Conducting and electroactive polymers are one class of electrochromic materials which may offer a low cost alternative to the traditional metal oxide materials that have been studied in depth. These materials also offer the advantages of having rapid switching rates and a well defined chemical structure. Recently, there have been many new conducting polymer systems developed which exhibit complementary electrochromic behavior and undergo reversible redox chemistry. This presentation will focus on the design, fabrication, and characterization of electrochromic devices based on complementary conducting polymers as cathodic and anodic electrochromic materials. Spectroelectrochemistry results and switching rate determinations will be discussed for two of these polymer based electrochromic devices.

  9. All-optical time-stretch digitizer

    NASA Astrophysics Data System (ADS)

    Fard, A. M.; Buckley, B.; Zlatanovic, S.; Brès, C.-S.; Radic, S.; Jalali, B.

    2012-07-01

    We propose and demonstrate an all-optical time-stretch digitizer for real-time capture of ultrafast optical signals, beyond the bandwidths achievable by electronics. This approach uniquely combines four-wave mixing and photonic time-stretch technique to slow down and record high-speed optical signals. As a proof-of-concept, real-time recording of 40-Gb/s non-return-to-zero on-off-keying optical data stream is experimentally demonstrated using a stretch factor of 54 and 1.5-GHz back-end electronic bandwidth. We also report on the observation of dispersion penalty and its mitigation via single-sideband conversion enabled by an optical bandpass filter. Our technique may provide a path to real-time capture of ultrahigh-speed optical data streams.

  10. Development of Curie point switching for thin film, random access, memory device

    NASA Technical Reports Server (NTRS)

    Lewicki, G. W.; Tchernev, D. I.

    1967-01-01

    Managanese bismuthide films are used in the development of a random access memory device of high packing density and nondestructive readout capability. Memory entry is by Curie point switching using a laser beam. Readout is accomplished by microoptical or micromagnetic scanning.

  11. Hanging foot switch for bipolar forceps: a device for surgeons operating in the standing position: technical note.

    PubMed

    Shimizu, Satoru; Kondo, Koji; Yamazaki, Tomoya; Koizumi, Hiroyuki; Miyazaki, Tomoko; Osawa, Shigeyuki; Sagiuchi, Takao; Nakayama, Kenji; Yamamoto, Isao; Fujii, Kiyotaka

    2013-01-01

    For surgeons operating in the standing position, the manipulation of foot switches involves shifting of the weight to the pivoting leg and the possible loss of contact between the switch and the foot. We solved this problem by changing the position of the switch that operates bipolar forceps. Our novel device is made of aluminum plates. The base plate features a foot strap and a height-adjustable overhang over the switch-operating foot. A commercially-available disc type foot switch is attached to the underside of the overhang in upside-down position, so the switch is operable with the toe. To turn on the switch, the toe is flexed dorsally to push the switch pedal, so the action is limited to the part distal to the metatarsophalangeal joints. Our switch was used in more than 100 consecutive microsurgeries performed by surgeons operating in the standing position. The switch manipulation required no shifting of the weight and was easier and quicker than manipulation of conventionally-placed switches. The surgeons were able to change the foot position freely with the modified switch, thereby avoiding loss of contact with the switch. The modified switch placement reduced physical fatigue in the lower extremities, annoyance related to the manipulation of conventionally-placed switches, and increased the comfort of surgeons operating in the standing position. PMID:23358172

  12. A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry.

    PubMed

    Katase, Takayoshi; Onozato, Takaki; Hirono, Misako; Mizuno, Taku; Ohta, Hiromichi

    2016-01-01

    Proton and hydroxyl ion play an essential role for tuning functionality of oxides because their electronic state can be controlled by modifying oxygen off-stoichiometry and/or protonation. Tungsten trioxide (WO3), a well-known electrochromic (EC) material for smart window, is a wide bandgap insulator, whereas it becomes a metallic conductor HxWO3 by protonation. Although one can utilize electrochromism together with metal-insulator (MI) switching for one device, such EC-MI switching cannot be utilized in current EC devices because of their two-terminal structure with parallel-plate configuration. Here we demonstrate a transparent EC-MI switchable device with three-terminal TFT-type structure using amorphous (a-) WO3 channel layer, which was fabricated on glass substrate at room temperature. We used water-infiltrated nano-porous glass, CAN (calcium aluminate with nano-pores), as a liquid-leakage-free solid gate insulator. At virgin state, the device was fully transparent in the visible-light region. For positive gate voltage, the active channel became dark blue, and electrical resistivity of the a-WO3 layer drastically decreased with protonation. For negative gate voltage, deprotonation occurred and the active channel returned to transparent insulator. Good cycleability of the present transparent EC-MI switching device would have potential for the development of advanced smart windows. PMID:27174791

  13. A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry

    PubMed Central

    Katase, Takayoshi; Onozato, Takaki; Hirono, Misako; Mizuno, Taku; Ohta, Hiromichi

    2016-01-01

    Proton and hydroxyl ion play an essential role for tuning functionality of oxides because their electronic state can be controlled by modifying oxygen off-stoichiometry and/or protonation. Tungsten trioxide (WO3), a well-known electrochromic (EC) material for smart window, is a wide bandgap insulator, whereas it becomes a metallic conductor HxWO3 by protonation. Although one can utilize electrochromism together with metal-insulator (MI) switching for one device, such EC-MI switching cannot be utilized in current EC devices because of their two-terminal structure with parallel-plate configuration. Here we demonstrate a transparent EC-MI switchable device with three-terminal TFT-type structure using amorphous (a-) WO3 channel layer, which was fabricated on glass substrate at room temperature. We used water-infiltrated nano-porous glass, CAN (calcium aluminate with nano-pores), as a liquid-leakage-free solid gate insulator. At virgin state, the device was fully transparent in the visible-light region. For positive gate voltage, the active channel became dark blue, and electrical resistivity of the a-WO3 layer drastically decreased with protonation. For negative gate voltage, deprotonation occurred and the active channel returned to transparent insulator. Good cycleability of the present transparent EC-MI switching device would have potential for the development of advanced smart windows. PMID:27174791

  14. A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry

    NASA Astrophysics Data System (ADS)

    Katase, Takayoshi; Onozato, Takaki; Hirono, Misako; Mizuno, Taku; Ohta, Hiromichi

    2016-05-01

    Proton and hydroxyl ion play an essential role for tuning functionality of oxides because their electronic state can be controlled by modifying oxygen off-stoichiometry and/or protonation. Tungsten trioxide (WO3), a well-known electrochromic (EC) material for smart window, is a wide bandgap insulator, whereas it becomes a metallic conductor HxWO3 by protonation. Although one can utilize electrochromism together with metal-insulator (MI) switching for one device, such EC-MI switching cannot be utilized in current EC devices because of their two-terminal structure with parallel-plate configuration. Here we demonstrate a transparent EC-MI switchable device with three-terminal TFT-type structure using amorphous (a-) WO3 channel layer, which was fabricated on glass substrate at room temperature. We used water-infiltrated nano-porous glass, CAN (calcium aluminate with nano-pores), as a liquid-leakage-free solid gate insulator. At virgin state, the device was fully transparent in the visible-light region. For positive gate voltage, the active channel became dark blue, and electrical resistivity of the a-WO3 layer drastically decreased with protonation. For negative gate voltage, deprotonation occurred and the active channel returned to transparent insulator. Good cycleability of the present transparent EC-MI switching device would have potential for the development of advanced smart windows.

  15. Gate-Controlled P-I-N Junction Switching Device with Graphene Nanoribbon

    NASA Astrophysics Data System (ADS)

    Nakaharai, Shu; Iijima, Tomohiko; Ogawa, Shinichi; Miyazaki, Hisao; Li, Songlin; Tsukagoshi, Kazuhito; Sato, Shintaro; Yokoyama, Naoki

    2012-01-01

    A graphene P-I-N junction switching device with a nanoribbon is proposed, which was aimed at finding an optimized operation scheme for graphene transistors. The device has two bulk graphene regions where the carrier type is electrostatically controlled by a top gate, and these two regions are separated by a nanoribbon that works as an insulator, resulting in a junction configuration of (P or N)-I-(P or N). It is demonstrated that the drain current modulation strongly depends on the junction configuration, while the nanoribbon is not directly top-gated, and that the device with a P-I-N or N-I-P junction can exhibit better switching properties.

  16. Bipolar tri-state resistive switching characteristics in Ti/CeOx/Pt memory device

    NASA Astrophysics Data System (ADS)

    Ismail, M.; W. Abbas, M.; M. Rana, A.; Talib, I.; E., Ahmed; Y. Nadeem, M.; L. Tsai, T.; U., Chand; A. Shah, N.; Hussain, M.; Aziz, A.; T. Bhatti, M.

    2014-12-01

    Highly repeatable multilevel bipolar resistive switching in Ti/CeOx/Pt nonvolatile memory device has been demonstrated. X-ray diffraction studies of CeO2 films reveal the formation of weak polycrystalline structure. The observed good memory performance, including stable cycling endurance and long data retention times (> 104 s) with an acceptable resistance ratio (~102), enables the device for its applications in future non-volatile resistive random access memories (RRAMs). Based on the unique distribution characteristics of oxygen vacancies in CeOx films, the possible mechanism of multilevel resistive switching in CeOx RRAM devices has been discussed. The conduction mechanism in low resistance state is found to be Ohmic due to conductive filamentary paths, while that in the high resistance state was identified as Ohmic for low applied voltages and a space-charge-limited conduction dominated by Schottky emission at high applied voltages.

  17. Using carbon quantum dots to improve the resistive switching behavior of ZnO nanorods device

    NASA Astrophysics Data System (ADS)

    Wang, Xueliang; Xu, Jianping; Shi, Shaobo; Zhang, Xiaosong; Zhang, Xuguang; Shi, Xin; Li, Shubin; Li, Linlin; Liu, Xiaojuan; Li, Lan

    2016-01-01

    An electronic bistable device with a composite structure was fabricated using tapered ZnO nanorod arrays (ZnO NRs) coated with carbon quantum-dots (C QDs). With the addition of C QDs, the ON/OFF resistance ratio is 6 ×102, over 100 times higher than that of device with pristine ZnO NRs. The effect of C QDs on the resistive switching behavior was investigated by current-voltage (I-V) and capacitance-voltage (C-V) characterization. The conduction mechanisms of the devices were discussed using space charge limited current (SCLC) model.

  18. All-Optical Interrogation of Neural Circuits

    PubMed Central

    2015-01-01

    There have been two recent revolutionary advances in neuroscience: First, genetically encoded activity sensors have brought the goal of optical detection of single action potentials in vivo within reach. Second, optogenetic actuators now allow the activity of neurons to be controlled with millisecond precision. These revolutions have now been combined, together with advanced microscopies, to allow “all-optical” readout and manipulation of activity in neural circuits with single-spike and single-neuron precision. This is a transformational advance that will open new frontiers in neuroscience research. Harnessing the power of light in the all-optical approach requires coexpression of genetically encoded activity sensors and optogenetic probes in the same neurons, as well as the ability to simultaneously target and record the light from the selected neurons. It has recently become possible to combine sensors and optical strategies that are sufficiently sensitive and cross talk free to enable single-action-potential sensitivity and precision for both readout and manipulation in the intact brain. The combination of simultaneous readout and manipulation from the same genetically defined cells will enable a wide range of new experiments as well as inspire new technologies for interacting with the brain. The advances described in this review herald a future where the traditional tools used for generations by physiologists to study and interact with the brain—stimulation and recording electrodes—can largely be replaced by light. We outline potential future developments in this field and discuss how the all-optical strategy can be applied to solve fundamental problems in neuroscience. SIGNIFICANCE STATEMENT This review describes the nexus of dramatic recent developments in optogenetic probes, genetically encoded activity sensors, and novel microscopies, which together allow the activity of neural circuits to be recorded and manipulated entirely using light. The

  19. A self-assembled system of nanoscopic switches: Gold-hydridosilsesquioxane-gold devices

    NASA Astrophysics Data System (ADS)

    Ludwig, Bonnie Jean

    Metal-insulator-metal devices have a simple device structure and may have interesting electronic characteristics, including negative differential resistance (NDR) and rewritable resistance memory states. It is postulated these behaviors are due to nanoscopic or molecular switches within the device. The work presented in this thesis includes a combination of physical and chemical alterations and characterization techniques in an attempt to understand the mechanism behind the unusual voltage-controlled behavior in Au-hydridosilsesquioxane (HSQ)-Au junctions. Devices were constructed on macroscopic, mesoscopic, and microscopic scales to determine if a change in size would result in a reduction of the number of switches present. Noise characteristics of the current in macroscopic and microscopic devices were studied to understand the energy profile and timescale of the nanoscale switches. Random telegraph signals (RTS) in macroscopic devices showed complex 1/f statistics, but the scale reduction to microscopic devices resulted in exponential statistics that are indicative of individual isolated fluctuators. Current-voltage (I-V) measurements on macroscopic and microscopic devices revealed that space-charge effects are possibly contributing to the conduction mechanism of Au-HSQ-Au devices. The effect of the interaction of hydrogen with the HSQ was explored. I-V and noise studies in fully deuterated HSQ did not show an isotope effect in macroscopic devices, and proton implantation and electron paramagnetic resonance (EPR) studies revealed that hydrogen is mobile within the HSQ film. Finally, the interfaces of devices were explored. Macroscopic and microscopic Au-HSQ-Au junctions were examined using electron microscopy and X-ray energy dispersive spectroscopy (XEDS), which showed that crystalline gold nanoparticles are present in the macroscopic devices, but not in the microscopic devices. The importance of the Au-HSQ interfaces was examined through modification of the

  20. Resistive switching based on filaments in metal/PMMA/metal thin film devices

    NASA Astrophysics Data System (ADS)

    Wolf, Christoph; Nau, Sebastian; Sax, Stefan; Busby, Yan; Pireaux, Jean-Jacques; List-Kratochvil, Emil J. W.

    2015-12-01

    The working mechanism of unipolar organic resistive switching thin-film devices is investigated. On the basis of a metal/poly(methyl methacrylate)/metal model system, direct spectroscopic evidence for filament formation is obtained by three-dimensional (3D) imaging with time-of-flight secondary ion mass spectrometry. By means of alternative fabrication methods the claimed influence of metal implantation in the organic layer during fabrication is ruled out. Further, the stability of the resistive switches under oxygen and humidity is investigated leading to a deeper understanding of the processes governing the formation and rupture of filaments.

  1. The GALAXIE all-optical FEL project

    SciTech Connect

    Rosenzweig, J. B.; Arab, E.; Andonian, G.; Cahill, A.; Fitzmorris, K.; Fukusawa, A.; Hoang, P.; Jovanovic, I.; Marcus, G.; Marinelli, A.; Murokh, A.; Musumeci, P.; Naranjo, B.; O'Shea, B.; O'Shea, F.; Ovodenko, A.; Pogorelsky, I.; Putterman, S.; Roberts, K.; Shumail, M.; and others

    2012-12-21

    We describe a comprehensive project, funded under the DARPA AXiS program, to develop an all-optical table-top X-ray FEL based on dielectric acceleration and electromagnetic undulators, yielding a compact source of coherent X-rays for medical and related applications. The compactness of this source demands that high field (>GV/m) acceleration and undulation-inducing fields be employed, thus giving rise to the project's acronym: GV/m AcceLerator And X-ray Integrated Experiment (GALAXIE). There are numerous physics and technical hurdles to surmount in this ambitious scenario, and the integrated solutions include: a biharmonic photonic TW structure, 200 micron wavelength electromagnetic undulators, 5 {mu}m laser development, ultra-high brightness magnetized/asymmetric emittance electron beam generation, and SASE FEL operation. We describe the overall design philosophy of the project, the innovative approaches to addressing the challenges presented by the design, and the significant progress towards realization of these approaches in the nine months since project initialization.

  2. All-optical beamlet train generation

    SciTech Connect

    Cary, John; Giacone, Rodolfo; Nieter, Chet; Bruhwiler, David; Esarey, Eric; Fubiani, Gwenael; Leemans, Wim

    2003-05-12

    One of the critical issues for the development of Laser Wake Field Acceleration (LWFA), which has the promise of creating table-top, GeV accelerators, is the loading of beamlets into the accelerating buckets. All optical injection schemes, which include LILAC, beat-wave colliding pulse injection, wave breaking injection, and phase-kick injection, provide a technique for doing so. Although a single bunch can have desirable properties such as energy spread of the order of a few percent, femtosecond duration k and low emittance (<1 mm-mrad), recent simulations show that such methods lead to efficiencies of transfer of plasma wave energy to beam energy that are low compared with conventional RF accelerators when only a single pulse is generated. Our latest simulations show that one can improve on this situation through the generation of a beamlet train. This can occur naturally through phase-kick injection at the front of the train and transverse wave breaking for the trailing pulses. The result is an efficiency improvement of the order of the number of beamlets in the train.

  3. Integrated all-optical logic discriminators based on plasmonic bandgap engineering

    PubMed Central

    Lu, Cuicui; Hu, Xiaoyong; Yang, Hong; Gong, Qihuang

    2013-01-01

    Optical computing uses photons as information carriers, opening up the possibility for ultrahigh-speed and ultrawide-band information processing. Integrated all-optical logic devices are indispensible core components of optical computing systems. However, up to now, little experimental progress has been made in nanoscale all-optical logic discriminators, which have the function of discriminating and encoding incident light signals according to wavelength. Here, we report a strategy to realize a nanoscale all-optical logic discriminator based on plasmonic bandgap engineering in a planar plasmonic microstructure. Light signals falling within different operating wavelength ranges are differentiated and endowed with different logic state encodings. Compared with values previously reported, the operating bandwidth is enlarged by one order of magnitude. Also the SPP light source is integrated with the logic device while retaining its ultracompact size. This opens up a way to construct on-chip all-optical information processors and artificial intelligence systems. PMID:24071647

  4. Description of all-optical network test bed and applications

    NASA Astrophysics Data System (ADS)

    Marquis, Douglas; Castagnozzi, Daniel M.; Hemenway, B. R.; Parikh, Salil A.; Stevens, Mark L.; Swanson, Eric A.; Thomas, Robert E.; Ozveren, C.; Kaminow, Ivan P.

    1995-12-01

    We describe an all-optical network testbed deployed in the Boston metropolitan area, and some of the experimental applications running over the network. The network was developed by a consortium of AT&T Bell Laboratories, Digital Equipment Corporation, and Massachusetts Institute of Technology under a grant from ARPA. The network is an optical WDM system organized as a hierarchy consisting of local, metropolitan, and wide area nodes that support optical broadcast and routing modes. Frequencies are shared and reused to enhance network scalability. Electronic access is provided through optical terminals that support multiple services having data rates between 10 Mbps/user and 10 Gbps/user. Novel components used to implement the network include fast-tuning 1.5 micrometers distributed Bragg reflector lasers, passive wavelength routers, and broadband optical frequency converters. An overlay control network implemented at 1.3 micrometers allows reliable out-of-band control and standardized network management of all network nodes. We have created interfaces between the AON and commercially available electronic circuit-switched and packet-switched networks. We will report on network applications that can dynamically allocate optical bandwidth between electronic packet-switches based on the offered load presented by users, without requiring interfaces between users and the AON control system. We will also describe video and telemedicine applications running over the network. We have demonstrated an audio/video codec that is directly interfaced to the optical network, and is capable of transmitting high-rate digitized video signals for broadcast or videoconferencing applications. We have also demonstrated a state-of-the-art radiological workstation that uses the AON to transport 2000 X 2000 X 16 bit images from a remote image server.

  5. Spatially resolved TiOx phases in switched RRAM devices using soft X-ray spectromicroscopy

    PubMed Central

    Carta, D.; Hitchcock, A. P.; Guttmann, P.; Regoutz, A.; Khiat, A.; Serb, A.; Gupta, I.; Prodromakis, T.

    2016-01-01

    Reduction in metal-oxide thin films has been suggested as the key mechanism responsible for forming conductive phases within solid-state memory devices, enabling their resistive switching capacity. The quantitative spatial identification of such conductive regions is a daunting task, particularly for metal-oxides capable of exhibiting multiple phases as in the case of TiOx. Here, we spatially resolve and chemically characterize distinct TiOx phases in localized regions of a TiOx–based memristive device by combining full-field transmission X-ray microscopy with soft X-ray spectroscopic analysis that is performed on lamella samples. We particularly show that electrically pre-switched devices in low-resistive states comprise reduced disordered phases with O/Ti ratios around 1.37 that aggregate in a ~100 nm highly localized region electrically conducting the top and bottom electrodes of the devices. We have also identified crystalline rutile and orthorhombic-like TiO2 phases in the region adjacent to the main reduced area, suggesting that the temperature increases locally up to 1000 K, validating the role of Joule heating in resistive switching. Contrary to previous studies, our approach enables to simultaneously investigate morphological and chemical changes in a quantitative manner without incurring difficulties imposed by interpretation of electron diffraction patterns acquired via conventional electron microscopy techniques. PMID:26891776

  6. Performance analysis of resistive switching devices based on BaTiO3 thin films

    NASA Astrophysics Data System (ADS)

    Samardzic, Natasa; Kojic, Tijana; Vukmirovic, Jelena; Tripkovic, Djordjije; Bajac, Branimir; Srdic, Vladimir; Stojanovic, Goran

    2016-03-01

    Resitive switching devices, memristors, have recenty attracted much attention due to promising performances and potential applications in the field of logic and memory devices. Here, we present thin film BaTiO3 based memristor fabricated using ink-jet printing technique. Active material is a single layer barium titanate film with thickness of ̴100 nm, sandwitched between metal electodes. Printing parameters were optimized aiming to achieve stable drop flow and uniform printed layer. Current-voltage characteristics show typical memristive behavior with pinched hysteresis loop crossed at the origin, with marked differences between High Resistive State (HRS) and Low Resistive State (LRS). Obtained resistive states are stable during numerous switching processes. The device also shows unipolar switching effect for negative voltage impulses. Variable voltage impulse amplitudes leads to the shifting of the energy levels of electode contacts resulting in changing of the overall current through the device. Structural charcterization have been performed using XRD analysis and SEM micrography. High-temperature current-voltage measurements combined with transport parameter analysis using Hall efect measurement system (HMS 3000) and Impedance Analyzer AC measurements allows deeper insigth into conduction mechanism of ferroelectric memristors.

  7. Large Conductance Switching in a Single-Molecule Device through Room Temperature Spin-Dependent Transport.

    PubMed

    Aragonès, Albert C; Aravena, Daniel; Cerdá, Jorge I; Acís-Castillo, Zulema; Li, Haipeng; Real, José Antonio; Sanz, Fausto; Hihath, Josh; Ruiz, Eliseo; Díez-Pérez, Ismael

    2016-01-13

    Controlling the spin of electrons in nanoscale electronic devices is one of the most promising topics aiming at developing devices with rapid and high density information storage capabilities. The interface magnetism or spinterface resulting from the interaction between a magnetic molecule and a metal surface, or vice versa, has become a key ingredient in creating nanoscale molecular devices with novel functionalities. Here, we present a single-molecule wire that displays large (>10000%) conductance switching by controlling the spin-dependent transport under ambient conditions (room temperature in a liquid cell). The molecular wire is built by trapping individual spin crossover Fe(II) complexes between one Au electrode and one ferromagnetic Ni electrode in an organic liquid medium. Large changes in the single-molecule conductance (>100-fold) are measured when the electrons flow from the Au electrode to either an α-up or a β-down spin-polarized Ni electrode. Our calculations show that the current flowing through such an interface appears to be strongly spin-polarized, thus resulting in the observed switching of the single-molecule wire conductance. The observation of such a high spin-dependent conductance switching in a single-molecule wire opens up a new door for the design and control of spin-polarized transport in nanoscale molecular devices at room temperature. PMID:26675052

  8. Spatially resolved TiOx phases in switched RRAM devices using soft X-ray spectromicroscopy

    NASA Astrophysics Data System (ADS)

    Carta, D.; Hitchcock, A. P.; Guttmann, P.; Regoutz, A.; Khiat, A.; Serb, A.; Gupta, I.; Prodromakis, T.

    2016-02-01

    Reduction in metal-oxide thin films has been suggested as the key mechanism responsible for forming conductive phases within solid-state memory devices, enabling their resistive switching capacity. The quantitative spatial identification of such conductive regions is a daunting task, particularly for metal-oxides capable of exhibiting multiple phases as in the case of TiOx. Here, we spatially resolve and chemically characterize distinct TiOx phases in localized regions of a TiOx-based memristive device by combining full-field transmission X-ray microscopy with soft X-ray spectroscopic analysis that is performed on lamella samples. We particularly show that electrically pre-switched devices in low-resistive states comprise reduced disordered phases with O/Ti ratios around 1.37 that aggregate in a ~100 nm highly localized region electrically conducting the top and bottom electrodes of the devices. We have also identified crystalline rutile and orthorhombic-like TiO2 phases in the region adjacent to the main reduced area, suggesting that the temperature increases locally up to 1000 K, validating the role of Joule heating in resistive switching. Contrary to previous studies, our approach enables to simultaneously investigate morphological and chemical changes in a quantitative manner without incurring difficulties imposed by interpretation of electron diffraction patterns acquired via conventional electron microscopy techniques.

  9. Spatially resolved TiOx phases in switched RRAM devices using soft X-ray spectromicroscopy.

    PubMed

    Carta, D; Hitchcock, A P; Guttmann, P; Regoutz, A; Khiat, A; Serb, A; Gupta, I; Prodromakis, T

    2016-01-01

    Reduction in metal-oxide thin films has been suggested as the key mechanism responsible for forming conductive phases within solid-state memory devices, enabling their resistive switching capacity. The quantitative spatial identification of such conductive regions is a daunting task, particularly for metal-oxides capable of exhibiting multiple phases as in the case of TiOx. Here, we spatially resolve and chemically characterize distinct TiOx phases in localized regions of a TiOx-based memristive device by combining full-field transmission X-ray microscopy with soft X-ray spectroscopic analysis that is performed on lamella samples. We particularly show that electrically pre-switched devices in low-resistive states comprise reduced disordered phases with O/Ti ratios around 1.37 that aggregate in a ~100 nm highly localized region electrically conducting the top and bottom electrodes of the devices. We have also identified crystalline rutile and orthorhombic-like TiO2 phases in the region adjacent to the main reduced area, suggesting that the temperature increases locally up to 1000 K, validating the role of Joule heating in resistive switching. Contrary to previous studies, our approach enables to simultaneously investigate morphological and chemical changes in a quantitative manner without incurring difficulties imposed by interpretation of electron diffraction patterns acquired via conventional electron microscopy techniques. PMID:26891776

  10. Numerical simulation of a novel all-optical flip-flop based on a chirped nonlinear distributed feedback semiconductor laser structure using GPGPU computing

    NASA Astrophysics Data System (ADS)

    Zoweil, H.

    2015-05-01

    A novel all-optical flip-flop based on a chirped nonlinear distributed feedback laser structure is proposed. The flip-flop does not require a holding beam. The optical gain is provided by a current injection into an active layer. The nonlinear wave-guiding layer consists of a chirped phase shifted grating accompanied with a negative nonlinear refractive index coefficient that increases in magnitude along the wave-guide. In the 'OFF' state, the chirped grating does not provide the required optical feedback to start lasing. An optical pulse switches the device 'ON' by reducing the chirp due to the negative nonlinear refractive index coefficient. The reduced chirp grating provides enough feedback to sustain a laser mode. The device is switched 'OFF' by cross gain modulation. GPGPU computing allows for long simulation time of multiple SET-RESET operations. The 'ON/OFF' transitions delays are in nanoseconds time scale.

  11. Resistance switching in HfO2 metal-insulator-metal devices

    NASA Astrophysics Data System (ADS)

    Gonon, P.; Mougenot, M.; Vallée, C.; Jorel, C.; Jousseaume, V.; Grampeix, H.; El Kamel, F.

    2010-04-01

    Resistance switching is studied in Au/HfO2 (10 nm)/(Pt, TiN) devices, where HfO2 is deposited by atomic layer deposition. The study is performed using different bias modes, i.e., a sweeping, a quasistatic and a static (constant voltage stress) mode. Instabilities are reported in several circumstances (change in bias polarity, modification of the bottom electrode, and increase in temperature). The constant voltage stress mode allows extracting parameters related to the switching kinetics. This mode also reveals random fluctuations between the ON and OFF states. The dynamics of resistance switching is discussed along a filamentary model which implies oxygen vacancies diffusion. The rf properties of the ON and OFF states are also presented (impedance spectroscopy).

  12. Switch programming of reflectivity control devices for the coupled dynamics of a solar sail

    NASA Astrophysics Data System (ADS)

    Hu, Tianjian; Gong, Shengping; Mu, Junshan; Li, Junfeng; Wang, Tianshu; Qian, Weiping

    2016-03-01

    As demonstrated in the Interplanetary Kite-craft Accelerated by Radiation Of the Sun (IKAROS), reflectivity control devices (RCDs) are switched on or off independently with each other, which has nevertheless been ignored by many previous researches. This paper emphasizes the discrete property of RCDs, and aims to obtain an appropriate switch law of RCDs for a rigid spinning solar sail. First, the coupled attitude-orbit dynamics is derived from the basic solar force and torque model into an underdetermined linear system with a binary set constraint. Subsequently, the coupled dynamics is reformulated into a constrained quadratic programming and a basic gradient projection method is designed to search for the optimal solution. Finally, a circular sail flying in the Venus rendezvous mission demonstrates the model and method numerically, which illustrates approximately 103 km terminal position error and 0.5 m/s terminal velocity error as 80 independent RCDs are switched on or off appropriately.

  13. Fast Deterministic Bipolar Switching in Orthogonal Spin Torque Devices via the Control of the Relative Spin Polarizations

    NASA Astrophysics Data System (ADS)

    Park, Junbo; Ralph, Daniel C.; Buhrman, Robert A.

    2014-03-01

    We model 100 ps pulse switching dynamics of orthogonal spin transfer (OST) devices that employ an out-of-plane polarizer (OPP) and an in-plane polarizer (IPP). Simulation results indicate that increasing the spin polarization ratio, CP =PIPP /POPP , results in deterministic switching of the free layer without over-rotation (360 degree rotation). By using spin torque asymmetry to realize an enhanced effective PIPP, we experimentally demonstrate this behavior in OST devices. Modeling predicts that decreasing the effective demagnetization field can substantially reduce the minimum CP required to attain deterministic bipolar switching, while retaining low critical switching current, Ip = 500 μA.

  14. A complementary switching mechanism for organic memory devices to regulate the conductance of binary states

    NASA Astrophysics Data System (ADS)

    Vyas, Giriraj; Dagar, Parveen; Sahu, Satyajit

    2016-06-01

    We have fabricated an organic non-volatile memory device wherein the ON/OFF current ratio has been controlled by varying the concentration of a small organic molecule, 2,3-Dichloro-5,6-dicyano-p-benzoquinone (DDQ), in an insulating matrix of a polymer Poly(4-vinylphenol) (PVP). A maximum ON-OFF ratio of 106 is obtained when the concentration of DDQ is half or 10 wt. % of PVP. In this process, the switching direction for the devices has also been altered, indicating the disparity in conduction mechanism. Conduction due to metal filament formation through the active material and the voltage dependent conformational change of the organic molecule seem to be the motivation behind the gradual change in the switching direction.

  15. The unification of filament and interfacial resistive switching mechanisms for titanium dioxide based memory devices

    NASA Astrophysics Data System (ADS)

    Zhang, F.; Li, X. M.; Gao, X. D.; Wu, L.; Cao, X.; Liu, X. J.; Yang, R.

    2011-05-01

    Reversible and controllable conversion between unipolar and bipolar resistive switching (URS and BRS) was observed in Pt/TiO2/Pt memory devices. The URS and BRS of this device exhibited different low resistance states but shared the same high resistance state. The conduction mechanisms of low resistance states in URS and BRS are Ohmic conduction and electrons tunneling, respectively, while the high resistance state is controlled by Schottky barrier formed at the top interface of Pt/TiO2. The temperature dependence of resistance states indicates Magnéli phase filaments formed in URS. A unified model was then proposed to demonstrate the unification of filament and interfacial switching mechanisms.

  16. Micro-ring resonator based all-optical reconfigurable logic operations

    NASA Astrophysics Data System (ADS)

    Rakshit, Jayanta Kumar; Roy, Jitendra Nath

    2014-06-01

    An all-optical reconfigurable logic operation essentially constitutes a key technology for performing various processing tasks with ultrafast signal-processing technologies. We present designs and simulations for highly cascadable all-optical reconfigurable logic operations using GaAs-AlGaAs micro-ring resonator based optical switches and multiplexers. The switching action of the ring resonator is achieved through variation in the refractive index of the ring resonator produced by the two-photon absorption (TPA) effect through the application of optical pump pulse. The proposed circuit can perform any of the four digital logic operations (NOT, NOR, XOR, AND) by using the appropriate optical pump signal at the selection port of the multiplexer. We have tried to exploit the advantages of micro-ring resonator based all optical switch to design an all-optical circuit. The reconfigurable nature of the circuit offers maximum flexibility for the end user since the entire application can be changed simply by adjusting the multiplexer select line signals. Numerical simulation confirming described methods is given in this paper.

  17. Detection of deeply implanted impedance-switching devices using ultrasound doppler.

    PubMed

    Mari, Jean Martial; Lafon, Cyril; Chapelon, Jean Yves

    2013-06-01

    Communication with and transmission of energy to remote devices, such as deeply-implanted physiological recorders, using ultrasound presents several technical problems. In particular, device detection and piezoelectric sensor targeting remains difficult. Both tasks require differentiating the device from the surrounding fully passive tissues. Like radiofrequency identification devices, ultrasonic transponders have the capacity to rapidly change the impedance of their piezoelectric elements, which modulates their backscattering coefficient and allows the device to "flash" periodically at a very low energy cost, and, in particular situations, to communicate with an external device. A method for localizing the device by interpreting this flashing as movement is presented here. An ultrasound Doppler scan sequence is implemented using a programmable scanner, and radio-frequency data are collected and processed. The data are then analyzed for different excitation lengths and flashing frequencies to determine the optimum detection parameters. Measurements show that 1) detection can be achieved and is maximal when the excitation length reaches that of the Doppler processing window, and 2) when the flashing frequency is in a specific range. A study of the incidence angle also showed that 3) the sensor of the device can be detected over a given angular window. The conclusion is that by using ultrasound color Doppler sequences, impedance-switching piezoelectric devices can be detected under the conditions provided in the present study, and can be distinguished from fully passive structures. PMID:25004471

  18. Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices

    SciTech Connect

    Lee, Seunghyup; Kim, Heejin; Yong, Kijung; Yun, Dong-Jin; Rhee, Shi-Woo

    2009-12-28

    This paper reports a resistive switching device of Au/ZnO/stainless steel (SS) and its applicability as a flexible resistive random access memory (ReRAM). The Au/ZnO/SS structure was fabricated by radio frequency sputtering deposition of a ZnO thin film on the SS substrate. The fabricated device showed stable unipolar and bipolar resistive switching behaviors with reliable switching responses over 100 cycles. The device performance was not degraded upon bending, which indicates high potential for flexible ReRAM applications.

  19. All-optical reservoir computer based on saturation of absorption.

    PubMed

    Dejonckheere, Antoine; Duport, François; Smerieri, Anteo; Fang, Li; Oudar, Jean-Louis; Haelterman, Marc; Massar, Serge

    2014-05-01

    Reservoir computing is a new bio-inspired computation paradigm. It exploits a dynamical system driven by a time-dependent input to carry out computation. For efficient information processing, only a few parameters of the reservoir needs to be tuned, which makes it a promising framework for hardware implementation. Recently, electronic, opto-electronic and all-optical experimental reservoir computers were reported. In those implementations, the nonlinear response of the reservoir is provided by active devices such as optoelectronic modulators or optical amplifiers. By contrast, we propose here the first reservoir computer based on a fully passive nonlinearity, namely the saturable absorption of a semiconductor mirror. Our experimental setup constitutes an important step towards the development of ultrafast low-consumption analog computers. PMID:24921786

  20. Atomic Level Design Rule for Ta-based Resistive Switching devices

    NASA Astrophysics Data System (ADS)

    Chang, Seo Hyoung; Hong, S.; Lee, M.-J.; Kim, Y.-B.; Chattopadhyay, S.; Shibata, T.; Magyari-Kope, B.; Kaduk, J. A.; Eastman, J. A.; Kim, J.

    2013-03-01

    Understanding resistive switching phenomena is a prerequisite to realizing the next generation of information storage systems. Ta-based resistive switching devices have been extensively investigated due to their fast switching and reliable endurance among other materials. Despite extensive recent interests, there is still a lack of fundamental understanding of electronic structure and local structure of the Ta-based device. Here, we investigated Ta2O5 powder, Ta2O5-δ and TaOx thin films and devices using synchrotron x-ray studies at the Advanced Photon Source, combining resonant x-ray inelastic scattering (RIXS), extended x-ray absorption spectroscopy (EXAFS) and density functional theory based ab initio calculations. We found that there are strong correlations between critical values of band gap energies and local atomic environments around Ta atoms. These studies can provide vast possibilities to create new materials based on atomic level design rather than the traditional trial-error methods. Work at the APS, Argonne is supported by a U.S. Department of Energy Office of Science laboratory, is operated under Contract No. DE-AC02-06CH11357.

  1. Polarization-encoded all-optical quaternary universal inverter and design of multivalued flip-flop

    NASA Astrophysics Data System (ADS)

    Chattopadhyay, Tanay; Roy, Jitendra Nath

    2010-03-01

    Quaternary inverters are the fundamental building blocks of multivalued flip-flops (MVFFs). A novel all-optical quaternary universal inverter circuit with the help of a semiconductor optical amplifier-assisted Sagnac switch is proposed and described. This circuit exploits the polarization properties of light. Different logical states are represented by different polarization states of light. A terahertz optical asymmetric multiplexer-based gate plays an important role here. Numerical simulation results confirming the described method are given. An all-optical circuit for a MVFF (quaternary) with the help of our proposed quaternary universal inverter is also designed, and simulation results are presented.

  2. All-optical steering of the interactions between multiple spatial solitons in isotropic polymers

    NASA Astrophysics Data System (ADS)

    Yan, Li-fen; Zhang, Dong; Jin, Qing-li; Wang, Hong-cheng; Zhang, Yao-ju

    2010-11-01

    All-optical steering of the nonlinear interactions between multiple spatial solitons can be performed in an isotropic photoisomerization polymer, by propagating an external control beam in perpendicular direction. Fusing, giving birth to another new soliton, and transferring energy can take place in the interactions of signal beams, which can be achieved by changing the incident position of the control beam, the initial relative phase and the power ratio between the signal beams and the control beam. These phenomena are physically explained, and they have significantly potential applications in optical signal readdressing, logic gating, and all-optical switching, etc.

  3. Dual-control nonlinear-optical loop mirrors for all-optical soliton synchronous modulation

    NASA Astrophysics Data System (ADS)

    Bigo, Sébastien; Desurvire, Emmanuel; Audouin, Olivier

    1996-09-01

    A novel dual-control configuration of nonlinear loop mirrors is used for all-optical soliton synchronous regeneration. Simulations show substantial improvement in transmission in this device compared with single-control devices, owing to chirp-free modulation. The absence of chirp is confirmed experimentally through a spectral analysis of the dual-control modulator.

  4. Rapidly Reconfigurable All-Optical Universal Logic Gates

    SciTech Connect

    Goddard, L L; Kallman, J S; Bond, T C

    2006-06-21

    We present designs and simulations for a highly cascadable, rapidly reconfigurable, all-optical, universal logic gate. We will discuss the gate's expected performance, e.g. speed, fanout, and contrast ratio, as a function of the device layout and biasing conditions. The gate is a three terminal on-chip device that consists of: (1) the input optical port, (2) the gate selection port, and (3) the output optical port. The device can be built monolithically using a standard multiple quantum well graded index separate confinement heterostructure laser configuration. The gate can be rapidly and repeatedly reprogrammed to perform any of the basic digital logic operations by using an appropriate analog electrical or optical signal at the gate selection port. Specifically, the same gate can be selected to execute one of the 2 basic unary operations (NOT or COPY), or one of the 6 binary operations (OR, XOR, AND, NOR, XNOR, or NAND), or one of the many logic operations involving more than two inputs. The speed of the gate for logic operations as well as for reprogramming the function of the gate is primarily limited to the small signal modulation speed of a laser, which can be on the order of tens of GHz. The reprogrammable nature of the universal gate offers maximum flexibility and interchangeability for the end user since the entire application of a photonic integrated circuit built from cascaded universal logic gates can be changed simply by adjusting the gate selection port signals.

  5. Ultrafast, atto-Joule switch using fiber-optic parametric amplifier operated in saturation.

    PubMed

    Andrekson, Peter A; Sunnerud, Henrik; Oda, Shoichiro; Nishitani, Takashi; Yang, Jiang

    2008-07-21

    All-optical manipulation of signals carried by lightwaves is attractive because controlling the light directly can be more efficient, allows a multitude of signal formats, and can also prove most cost effective. We implemented a novel scheme for ultrafast optical switching using very small control energy that relies on the use of a saturated fiber-optic parametric amplifier. Approximately 19 aJ (150 photons) of control pulse energy was needed for 50% extinction of the signal which is three to four orders of magnitude smaller than in other all-optical switching demonstrations. This allows the consideration of novel practical approaches to implement all-optical switching devices and all-optical subsystems for telecommunications and other applications. PMID:18648409

  6. Polarization-based all-optical logic operations in volume holographic photopolymer

    NASA Astrophysics Data System (ADS)

    Li, Chengmingyue; Cao, Liangcai; Li, Jingming; Wang, Zheng; Jin, Guofan

    2014-11-01

    Polarization-based all-optical logic operations were realized with dual-channel polarization holographic recording system. The polarization property of 9, 10-phenanthrenequinone-doped poly-methyl methacrylate (PQ/PMMA) photopolymer is investigated experimentally. To accurately represent the optical operations, the diffraction efficiency of parallel and orthogonal polarization recording in PQ/PMMA with the thickness of 1 mm are characterized for holographic recording and reconstruction process. A dual-channel polarization holographic recording system is set up for simultaneously recording two input pages. By changing the polarization state of the diffraction beam, all-optical logic OR and NAND operations are realized in the volume holograms. The polarization-based all-optical logic operations in the volume holographic photopolymer may pave a way for practical all-optical logic devices with high speed and large information capacity.

  7. Flexible all-optical frequency allocation of OFDM subcarriers.

    PubMed

    Lowery, Arthur James; Schröder, Jochen; Du, Liang B

    2014-01-13

    We investigate the underlying mechanism that allows OFDM subcarriers in an all-optical OFDM system to be assigned to any optical frequency using an optical filter, even if that frequency is not generated by the comb-line source feeding the filters. We confirm our analysis using simulations, and present experimental results from a 252-subcarrier system that uses a mode-locked laser (MLL) as the comb source and a wavelength selective switch. The experimental results show that there is no correlation between the programmed frequency offset between a subcarrier and nearest comb line, and the received signal quality. Thus, subcarriers could be inserted into unused portions of an optical transmission system's spectrum without restriction on their particular center frequencies. Any percentage of cyclic prefix can be added to the OFDM symbol simply by reprogramming the optical filter to give wider subcarrier frequency spacing than the comb line spacing, which is useful for tailoring the CP to the dispersion of various optical transmission paths, to maximize the spectral efficiency. Finally, the MLL's center frequency need not be locked to a system reference. PMID:24515064

  8. The effect of thermoelectric contributions in switching dynamics and resistance drift of Phase Change Memory devices

    NASA Astrophysics Data System (ADS)

    Cogulu, Egecan; Cinar, Ibrahim; Gokce, Aisha; Stipe, Barry; Katine, Jordan; Aktas, Gulen; Ozatay, Ozhan

    2015-03-01

    Phase Change Memory (PCM) is a promising non-volatile data storage technology that allows for multiple-bit-per-cell operation due to its high contrast in the resistance levels between 0 and 1 logic states. To visualize the complex nature and the stability of the switching dynamics in PCM devices with or without an intermediate resistance state, 3D finite element simulations were carried out in cells with a single Ge2Sb2Te5(GST) layer incorporating temperature and phase dependent thermal and electrical conductivities as well as thermoelectric effects. We compare our results with the experimental data and with our previous simulations to understand the influence of the thermo-electric effect on the phase switching. In addition, we integrated drift equations into our multiphysics simulation to get a complete picture of structural relaxation in time in amorphous and mixed phases of the GST. We compare our results with experimental resistance drift measurements to calculate a decay rate for defect concentration. Our results yield a complete picture of switching dynamics and post-switching resistance drift phenomena on the microscopic scale. TUBITAK fund 113F385, Bogazici Uni. Research Fund, 12B03M1, and European Union FP7 Marie Curie International Re-integration Grant PCM-256281.

  9. All-Optical Half-Adder Using All-Optical XOR and AND Gates for Optical Generation of "Sum" and "Carry"

    NASA Astrophysics Data System (ADS)

    Menezes, J. W. M.; Fraga, W. B.; Ferreira, A. C.; Guimarães, G. F.; Filho, A. F. G. F.; Sobrinho, C. S.; Sombra, A. S. B.

    2010-07-01

    In this article, a numerical simulation study using the symmetric planar three-core non-linear directional coupler, operating with a short light pulse (2 ps), for the implementation of an all-optical half-adder is presented. The half-adder is the key building block for many digital processing functions such as shift register, binary counter, and serial parallel data converters. Optical couplers are an important component for application in optical fiber telecommunication systems and all integrated optical circuits because of very high switching speeds (as high as the femto-second range). In this numerical simulation, the symmetric planar three-core non-linear directional coupler presents a planar symmetrical structure with three cores in a parallel equidistant arrangement, three logical inputs (CP, A, and B), and two output logic functions (C and S). The CP(ΔΦ) input is a control pulse with a phase difference ΔΦ = Δθπ (0 ≤ Δθ ≤ 2) between inputs A and B (logical inputs of the half-adder) and one amplitude discriminator circuit. The half-adder uses two output logic functions of Sum(S) and Carry(C), which can be demonstrated by using XOR and AND gates, respectively. For the half-adder, the phase [ΔΦMIN, ΔΦMAX] intervals are studied, allowing the operation of the device as a half-adder. For the selected range of CP(ΔΦBETTER), the extinction ratio was studied, the compression factors for both Sum(S) and Carry(C) outputs of the symmetric planar three-core non-linear directional coupler.

  10. Electrochromically switched, gas-reservoir metal hydride devices with application to energy-efficient windows

    SciTech Connect

    Anders, Andre; Slack, Jonathan L.; Richardson, Thomas J.

    2008-05-05

    Proof-of-principle gas-reservoir MnNiMg electrochromic mirror devices have been investigated. In contrast to conventional electrochromic approaches, hydrogen is stored (at low concentration) in the gas volume between glass panes of the insulated glass units (IGUs). The elimination of a solid state ion storage layer simplifies the layer stack, enhances overall transmission, and reduces cost. The cyclic switching properties were demonstrated and system durability improved with the incorporation a thin Zr barrier layer between the MnNiMg layer and the Pd catalyst. Addition of 9 percent silver to the palladium catalyst further improved system durability. About 100 full cycles have been demonstrated before devices slow considerably. Degradation of device performance appears to be related to Pd catalyst mobility, rather than delamination or metal layer oxidation issues originally presumed likely to present significant challenges.

  11. Automatic switching and guidance system to facilitate unassisted uroflowmetry using commercial electronic devices.

    PubMed

    Terai, Akito; Ueda, Nobufumi; Utsunomiya, Noriaki; Kohei, Naoki; Aoyama, Teruyoshi; Inoue, Koji

    2006-08-01

    To enable male patients to undergo uroflowmetry in a private condition without medical supervision, we devised an automatic switching and patient guidance system for the spinning disk uroflowmeter Urodyn 1000, using two commercial electronic devices (an infrared motion sensor tap and a memorizable vacuum fluorescent display). Instead of running the uroflowmeter continuously, which shortens the life of the spinning disk due to mechanical wear, an infrared motion sensor turns on the devices each time a patient enters the room. The patient urinates according to the timely instructions on the visible display and voided urine directly flows into a urinal. The devices are automatically turned off 5 min after the patient leaves the room. With the use of our system, men already acquainted with uroflowmetry could perform self-administered uroflowmetry any time in private. The system was considered useful for improving the quality of patient service. PMID:16903954

  12. Nonpolar resistive switching in Cu/SiC/Au non-volatile resistive memory devices

    NASA Astrophysics Data System (ADS)

    Zhong, L.; Jiang, L.; Huang, R.; de Groot, C. H.

    2014-03-01

    Amorphous silicon carbide (a-SiC) based resistive memory (RM) Cu/a-SiC/Au devices were fabricated and their resistive switching characteristics investigated. All four possible modes of nonpolar resistive switching were achieved with ON/OFF ratio in the range 106-108. Detailed current-voltage I-V characteristics analysis suggests that the conduction mechanism in low resistance state is due to the formation of metallic filaments. Schottky emission is proven to be the dominant conduction mechanism in high resistance state which results from the Schottky contacts between the metal electrodes and SiC. ON/OFF ratios exceeding 107 over 10 years were also predicted from state retention characterizations. These results suggest promising application potentials for Cu/a-SiC/Au RMs.

  13. Routing and wavelength assignment based on normalized resource and constraints for all-optical network

    NASA Astrophysics Data System (ADS)

    Joo, Seong-Soon; Nam, Hyun-Soon; Lim, Chang-Kyu

    2003-08-01

    With the rapid growth of the Optical Internet, high capacity pipes is finally destined to support end-to-end IP on the WDM optical network. Newly launched 2D MEMS optical switching module in the market supports that expectations of upcoming a transparent optical cross-connect in the network have encouraged the field applicable research on establishing real all-optical transparent network. To open up a customer-driven bandwidth services, design of the optical transport network becomes more challenging task in terms of optimal network resource usage. This paper presents a practical approach to finding a route and wavelength assignment for wavelength routed all-optical network, which has λ-plane OXC switches and wavelength converters, and supports that optical paths are randomly set up and released by dynamic wavelength provisioning to create bandwidth between end users with timescales on the order of seconds or milliseconds. We suggest three constraints to make the RWA problem become more practical one on deployment for wavelength routed all-optical network in network view: limitation on maximum hop of a route within bearable optical network impairments, limitation on minimum hops to travel before converting a wavelength, and limitation on calculation time to find all routes for connections requested at once. We design the NRCD (Normalized Resource and Constraints for All-Optical Network RWA Design) algorithm for the Tera OXC: network resource for a route is calculated by the number of internal switching paths established in each OXC nodes on the route, and is normalized by ratio of number of paths established and number of paths equipped in a node. We show that it fits for the RWA algorithm of the wavelength routed all-optical network through real experiments on the distributed objects platform.

  14. Photo-electron double regulated resistive switching memory behaviors of Ag/CuWO4/FTO device

    NASA Astrophysics Data System (ADS)

    Sun, B.; Jia, X. J.; Wu, J. H.; Chen, P.

    2015-12-01

    In this work, the CuWO4 film based resistive switching memory capacitors were fabricated with hydrothermal and spin-coating approaches. The device exhibits excellent photo-electron double controlled resistive switching memory characteristics with OFF/ON resistance ratio of ~103. It is believed that the interface of CuWO4 and FTO is responsible for such a switching behavior and it can be described by the Schottky-like barriers model. This study is useful for exploring the multifunctional materials and their applications in photo-electron double controlled nonvolatile memory devices.

  15. Top electrode-dependent resistance switching behaviors of lanthanum-doped ZnO film memory devices

    NASA Astrophysics Data System (ADS)

    Xu, Dinglin; Xiong, Ying; Tang, Minghua; Zeng, Baiwen

    2014-03-01

    Lanthanum-doped ZnO (Zn0.99La0.01O) polycrystalline thin films were deposited on Pt/Ti/SiO2/Si substrates by a chemical solution deposition method. Metal/La-doped ZnO/Pt sandwich structures were constructed by depositing different top electrodes (Ag and Pt). Unipolar switching and bipolar switching characteristics were investigated in Pt/La-doped ZnO/Pt and Ag/La-doped ZnO/Pt structures, respectively. Compared with the undoped devices (Pt/ZnO/Pt and Ag/ZnO/Pt), the La-doped devices exhibits superior resistive switching performances, such as narrow distribution of the resistive switching properties ( R ON, R OFF, V Set, and V Reset), higher R OFF/ R ON ratio and sharp switching transition.

  16. Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device.

    PubMed

    Seo, Kyungah; Kim, Insung; Jung, Seungjae; Jo, Minseok; Park, Sangsu; Park, Jubong; Shin, Jungho; Biju, Kuyyadi P; Kong, Jaemin; Lee, Kwanghee; Lee, Byounghun; Hwang, Hyunsang

    2011-06-24

    We demonstrated analog memory, synaptic plasticity, and a spike-timing-dependent plasticity (STDP) function with a nanoscale titanium oxide bilayer resistive switching device with a simple fabrication process and good yield uniformity. We confirmed the multilevel conductance and analog memory characteristics as well as the uniformity and separated states for the accuracy of conductance change. Finally, STDP and a biological triple model were analyzed to demonstrate the potential of titanium oxide bilayer resistive switching device as synapses in neuromorphic devices. By developing a simple resistive switching device that can emulate a synaptic function, the unique characteristics of synapses in the brain, e.g. combined memory and computing in one synapse and adaptation to the outside environment, were successfully demonstrated in a solid state device. PMID:21572200

  17. Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

    DOEpatents

    Tour, James M.; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

    2015-09-08

    In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the gap region between the first electrical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

  18. Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

    DOEpatents

    Tour, James M; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

    2013-11-26

    In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the the gap region between the first electical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

  19. Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices.

    PubMed

    Jo, Jaesung; Choi, Woo Young; Park, Jung-Dong; Shim, Jae Won; Yu, Hyun-Yong; Shin, Changhwan

    2015-07-01

    Because of the "Boltzmann tyranny" (i.e., the nonscalability of thermal voltage), a certain minimum gate voltage in metal-oxide-semiconductor (MOS) devices is required for a 10-fold increase in drain-to-source current. The subthreshold slope (SS) in MOS devices is, at best, 60 mV/decade at 300 K. Negative capacitance in organic/ferroelectric materials is proposed in order to address this physical limitation in MOS technology. Here, we experimentally demonstrate the steep switching behavior of a MOS device-that is, SS ∼ 18 mV/decade (much less than 60 mV/decade) at 300 K-by taking advantage of negative capacitance in a MOS gate stack. This negative capacitance, originating from the dynamics of the stored energy in a phase transition of a ferroelectric material, can achieve the step-up conversion of internal voltage (i.e., internal voltage amplification in a MOS device). With the aid of a series-connected negative capacitor as an assistive device, the surface potential in the MOS device becomes higher than the applied gate voltage, so that a SS of 18 mV/decade at 300 K is reliably observed. PMID:26103511

  20. Transient Resistive Switching Devices Made from Egg Albumen Dielectrics and Dissolvable Electrodes.

    PubMed

    He, Xingli; Zhang, Jian; Wang, Wenbo; Xuan, Weipeng; Wang, Xiaozhi; Zhang, Qilong; Smith, Charles G; Luo, Jikui

    2016-05-01

    Egg albumen as the dielectric, and dissolvable Mg and W as the top and bottom electrodes are used to fabricate water-soluble memristors. 4 × 4 cross-bar configuration memristor devices show a bipolar resistive switching behavior with a high to low resistance ratio in the range of 1 × 10(2) to 1 × 10(4), higher than most other biomaterial-based memristors, and a retention time over 10(4) s without any sign of deterioration, demonstrating its high stability and reliability. Metal filaments accompanied by hopping conduction are believed to be responsible for the switching behavior of the memory devices. The Mg and W electrodes, and albumen film all can be dissolved in water within 72 h, showing their transient characteristics. This work demonstrates a new way to fabricate biocompatible and dissolvable electronic devices by using cheap, abundant, and 100% natural materials for the forthcoming bioelectronics era as well as for environmental sensors when the Internet of things takes off. PMID:27052437

  1. Toward efficient aeroelastic energy harvesting: device performance comparisons and improvements through synchronized switching

    NASA Astrophysics Data System (ADS)

    Bryant, Matthew; Schlichting, Alexander D.; Garcia, Ephrahim

    2013-04-01

    This paper presents experimental energy harvesting efficiency analysis of a piezoelectric device driven to limit cycle oscillations by an aeroelastic flutter instability. Wind tunnel testing of the flutter energy harvester was used to measure the power extracted through a matched resistive load as well as the variation in the device swept area over a range of wind speeds. The efficiency of this energy harvester was shown to be maximized at a wind speed of about 2.4 m/s, which corresponds to a limit cycle oscillation (LCO) frequency that matches the first natural frequency of the piezoelectric structure. At this wind speed, the overall system efficiency was 2.6%, which exceeds the peak efficiency of other comparably sized oscillator-based wind energy harvesters using either piezoelectric or electromagnetic transduction. Active synchronized switching techniques are proposed as a method to further increase the overall efficiency of this device by both boosting the electrical output and also reducing the swept area by introducing additional electrical energy dissipation. Real-time peak detection and switch control is the major technical challenge to implementing such active power electronics schemes in a practical system where the wind speed and the corresponding LCO frequency are not generally known or constant. A promising microcontroller (MCU) based peak detector is implemented and tested over a range of operating wind speeds.

  2. High contrast ratio and fast-switching dual polymer electrochromic devices

    SciTech Connect

    Sapp, S.A.; Sotzing, G.A.; Reynolds, J.R.

    1998-08-01

    A series of dual polymer electrochromic devices (ECDs) based on 12 complementary pairs of conducting polymer films have been constructed using 3,4-ethylenedioxythiophene-containing conducting polymers. Poly[3,6-bis(2-(3,4-ethylenedioxythiophene))-N-methylcarbazole] (PBEDOT-NCH{sub 3}Cz), poly[3,6-bis(2-(3,4-ethylenedioxythiophene))-N-eicosylcarbazole] (PBEDOT-NC{sub 20}H{sub 41}Cz), and poly[4,4{prime}-bis(2-(3,4-ethylenedioxythiophene))biphenyl] (PBEDOT-BP) were utilized as anodically coloring polymers that electrochemically switch between an oxidized deep blue absorptive state and a transmissive (orange or yellow) reduced state. Poly(3,4-ethylenedioxythiophene)(PEDOT) and its alkyl derivatives (PEDOT-C{sub 14}H{sub 29} and PEDOT-C{sub 16}H{sub 33}) have been used as high-contrast cathodically coloring polymers that switch between a deep blue absorptive state in the reduced form and a sky blue, highly transmissive state in the oxidized form. The dual polymer ECDs were constructed by separating complementary pairs of EC polymer films, deposited on ITO glass, with a gel electrolyte composed of a lithium salt and plasticized poly(methyl methacrylate) (PMMA). Device contrast ratios, measured as {Delta}%T, ranged from 27% to 63%, and subsecond switching times for full color change were achieved. These devices were found to exhibit extremely high coloration efficiencies of up to 1400 cm{sup 2}/C over narrow (ca. 100 nm) wavelength ranges and to retain up to 60% of their optical response after 10,000 deep, double potential steps, rendering them useful for EC applications.

  3. Gate-Controlled P-I-N Junction Switching Device with Graphene Nanoribbon

    NASA Astrophysics Data System (ADS)

    Nakaharai, Shu; Iijima, Tomohiko; Ogawa, Shinichi; Miyazaki, Hisao; Li, Songlin; Tsukagoshi, Kazuhito; Sato, Shintaro; Yokoyama, Naoki

    2012-02-01

    The concept of a novel graphene P-I-N junction switching device with a nanoribbon is proposed, and its basic operation is demonstrated in an experiment. The concept aims to optimize the operation scheme for graphene transistors toward a superior on-off property. The device has two bulk graphene regions where the carrier type is electrostatically controlled by a top-gate, and these two regions are separated by a nanoribbon which works as insulator. As a result, the device forms a (P or N)-I-(P or N) junction. The off state is obtained by lifting the band of the bulk graphene of the source side and lowering that of the drain side, so that the device forms a P-I-N junction. In this configuration, the leakage current is reduced more effectively than the conventional single gate transistors due to a high barrier height and a long tunneling length in the nanoribbon. The on state is obtained by flipping the polarity of the bias of either top-gate to form a P-I-P or N-I-N junction. An experiment showed that the drain current was suppressed in the cases of P-I-N and N-I-P compared to P-I-P and N-I-N, and all of the behaviors were consistent with what was expected from the device operation model. This research is granted by JSPS through FIRST Program initiated by CSTP.

  4. Bipolar resistive switching in room temperature grown disordered vanadium oxide thin-film devices

    NASA Astrophysics Data System (ADS)

    Wong, Franklin J.; Sriram, Tirunelveli S.; Smith, Brian R.; Ramanathan, Shriram

    2013-09-01

    We demonstrate bipolar switching with high OFF/ON resistance ratios (>104) in Pt/vanadium oxide/Cu structures deposited entirely at room temperature. The SET (RESET) process occurs when negative (positive) bias is applied to the top Cu electrode. The vanadium oxide (VOx) films are amorphous and close to the vanadium pentoxide stoichiometry. We also investigated Cu/VOx/W structures, reversing the position of the Cu electrode, and found the same polarity dependence with respect to the top and bottom electrodes, which suggests that the bipolar nature is linked to the VOx layer itself. Bipolar switching can be observed at 100 °C, indicating that it not due to a temperature-induced metal-insulator transition of a vanadium dioxide second phase. We discuss how ionic drift can lead to the bipolar electrical behavior of our junctions, similar to those observed in devices based on several other defective oxides. Such low-temperature processed oxide switches could be of relevance to back-end or package integration processing schemes.

  5. Photonic encryption : modeling and functional analysis of all optical logic.

    SciTech Connect

    Tang, Jason D.; Schroeppel, Richard Crabtree; Robertson, Perry J.

    2004-10-01

    With the build-out of large transport networks utilizing optical technologies, more and more capacity is being made available. Innovations in Dense Wave Division Multiplexing (DWDM) and the elimination of optical-electrical-optical conversions have brought on advances in communication speeds as we move into 10 Gigabit Ethernet and above. Of course, there is a need to encrypt data on these optical links as the data traverses public and private network backbones. Unfortunately, as the communications infrastructure becomes increasingly optical, advances in encryption (done electronically) have failed to keep up. This project examines the use of optical logic for implementing encryption in the photonic domain to achieve the requisite encryption rates. This paper documents the innovations and advances of work first detailed in 'Photonic Encryption using All Optical Logic,' [1]. A discussion of underlying concepts can be found in SAND2003-4474. In order to realize photonic encryption designs, technology developed for electrical logic circuits must be translated to the photonic regime. This paper examines S-SEED devices and how discrete logic elements can be interconnected and cascaded to form an optical circuit. Because there is no known software that can model these devices at a circuit level, the functionality of S-SEED devices in an optical circuit was modeled in PSpice. PSpice allows modeling of the macro characteristics of the devices in context of a logic element as opposed to device level computational modeling. By representing light intensity as voltage, 'black box' models are generated that accurately represent the intensity response and logic levels in both technologies. By modeling the behavior at the systems level, one can incorporate systems design tools and a simulation environment to aid in the overall functional design. Each black box model takes certain parameters (reflectance, intensity, input response), and models the optical ripple and time delay

  6. Realization of transient memory-loss with NiO-based resistive switching device

    NASA Astrophysics Data System (ADS)

    Hu, S. G.; Liu, Y.; Chen, T. P.; Liu, Z.; Yu, Q.; Deng, L. J.; Yin, Y.; Hosaka, Sumio

    2012-11-01

    A resistive switching device based on a nickel-rich nickel oxide thin film, which exhibits inherent learning and memory-loss abilities, is reported in this work. The conductance of the device gradually increases and finally saturates with the number of voltage pulses (or voltage sweepings), which is analogous to the behavior of the short-term and long-term memory in the human brain. Furthermore, the number of the voltage pulses (or sweeping cycles) required to achieve a given conductance state increases with the interval between two consecutive voltage pulses (or sweeping cycles), which is attributed to the heat diffusion in the material of the conductive filaments formed in the nickel oxide thin film. The phenomenon resembles the behavior of the human brain, i.e., forgetting starts immediately after an impression, a larger interval of the impressions leads to more memory loss, thus the memorization needs more impressions to enhance.

  7. Heating power lowering by downscaling the cell dimensions in nanoscale filamentary resistive switching devices

    NASA Astrophysics Data System (ADS)

    Yin, Qiaonan; Chen, Yan; Xia, Yidong; Xu, Bo; Yin, Jiang; Liu, Zhiguo

    2016-04-01

    In this work, we theoretically investigate the size dependence of the heat process in thermochemical filamentary resistive switching memories of crossbar structure. The equivalent heat resistance of the system increases with the device dimensions scaled down because of the size-dependent electric and thermal conductivity and geometry configurations. The higher equivalent heat resistance by diminishing the cell sizes induces an enhanced self-heating effect of the filament. It promises lower operation voltage and heating power to trigger the thermally activated dissolution of the filament in RESET process. These results strengthen the advantage of filamentary memories in lateral and longitudinal scaling down technologies where less power consumption has long been urged. Our results also show the opposite dependence of the driven electric field on the linewidth and thickness of the device.

  8. Conductance switching in Ag2S devices fabricated by in situ sulfurization

    NASA Astrophysics Data System (ADS)

    Morales-Masis, M.; van der Molen, S. J.; Fu, W. T.; Hesselberth, M. B.; van Ruitenbeek, J. M.

    2009-03-01

    We report a simple and reproducible method to fabricate switchable Ag2S devices. The α-Ag2S thin films are produced by a sulfurization process after silver deposition on an Si substrate. Structure and composition of the Ag2S are characterized using XRD and RBS. Our samples show semiconductor behaviour at low bias voltages, whereas they exhibit reproducible bipolar resistance switching at higher bias voltages. The transition between both types of behaviour is observed by hysteresis in the I-V curves, indicating decomposition of the Ag2S, increasing the Ag+ ion mobility. The as-fabricated Ag2S samples are a good candidate for future solid state memory devices, as they show reproducible memory resistive properties and they are fabricated by an accessible and reliable method.

  9. Conductance switching in Ag(2)S devices fabricated by in situ sulfurization.

    PubMed

    Morales-Masis, M; van der Molen, S J; Fu, W T; Hesselberth, M B; van Ruitenbeek, J M

    2009-03-01

    We report a simple and reproducible method to fabricate switchable Ag(2)S devices. The alpha-Ag(2)S thin films are produced by a sulfurization process after silver deposition on an Si substrate. Structure and composition of the Ag(2)S are characterized using XRD and RBS. Our samples show semiconductor behaviour at low bias voltages, whereas they exhibit reproducible bipolar resistance switching at higher bias voltages. The transition between both types of behaviour is observed by hysteresis in the I-V curves, indicating decomposition of the Ag(2)S, increasing the Ag(+) ion mobility. The as-fabricated Ag(2)S samples are a good candidate for future solid state memory devices, as they show reproducible memory resistive properties and they are fabricated by an accessible and reliable method. PMID:19417506

  10. Ultralow-power switching via defect engineering in germanium telluride phase-change memory devices

    PubMed Central

    Nukala, Pavan; Lin, Chia-Chun; Composto, Russell; Agarwal, Ritesh

    2016-01-01

    Crystal–amorphous transformation achieved via the melt-quench pathway in phase-change memory involves fundamentally inefficient energy conversion events; and this translates to large switching current densities, responsible for chemical segregation and device degradation. Alternatively, introducing defects in the crystalline phase can engineer carrier localization effects enhancing carrier–lattice coupling; and this can efficiently extract work required to introduce bond distortions necessary for amorphization from input electrical energy. Here, by pre-inducing extended defects and thus carrier localization effects in crystalline GeTe via high-energy ion irradiation, we show tremendous improvement in amorphization current densities (0.13–0.6 MA cm−2) compared with the melt-quench strategy (∼50 MA cm−2). We show scaling behaviour and good reversibility on these devices, and explore several intermediate resistance states that are accessible during both amorphization and recrystallization pathways. Existence of multiple resistance states, along with ultralow-power switching and scaling capabilities, makes this approach promising in context of low-power memory and neuromorphic computation. PMID:26805748

  11. Ultralow-power switching via defect engineering in germanium telluride phase-change memory devices.

    PubMed

    Nukala, Pavan; Lin, Chia-Chun; Composto, Russell; Agarwal, Ritesh

    2016-01-01

    Crystal-amorphous transformation achieved via the melt-quench pathway in phase-change memory involves fundamentally inefficient energy conversion events; and this translates to large switching current densities, responsible for chemical segregation and device degradation. Alternatively, introducing defects in the crystalline phase can engineer carrier localization effects enhancing carrier-lattice coupling; and this can efficiently extract work required to introduce bond distortions necessary for amorphization from input electrical energy. Here, by pre-inducing extended defects and thus carrier localization effects in crystalline GeTe via high-energy ion irradiation, we show tremendous improvement in amorphization current densities (0.13-0.6 MA cm(-2)) compared with the melt-quench strategy (∼50 MA cm(-2)). We show scaling behaviour and good reversibility on these devices, and explore several intermediate resistance states that are accessible during both amorphization and recrystallization pathways. Existence of multiple resistance states, along with ultralow-power switching and scaling capabilities, makes this approach promising in context of low-power memory and neuromorphic computation. PMID:26805748

  12. Ultralow-power switching via defect engineering in germanium telluride phase-change memory devices

    NASA Astrophysics Data System (ADS)

    Nukala, Pavan; Lin, Chia-Chun; Composto, Russell; Agarwal, Ritesh

    2016-01-01

    Crystal-amorphous transformation achieved via the melt-quench pathway in phase-change memory involves fundamentally inefficient energy conversion events; and this translates to large switching current densities, responsible for chemical segregation and device degradation. Alternatively, introducing defects in the crystalline phase can engineer carrier localization effects enhancing carrier-lattice coupling; and this can efficiently extract work required to introduce bond distortions necessary for amorphization from input electrical energy. Here, by pre-inducing extended defects and thus carrier localization effects in crystalline GeTe via high-energy ion irradiation, we show tremendous improvement in amorphization current densities (0.13-0.6 MA cm-2) compared with the melt-quench strategy (~50 MA cm-2). We show scaling behaviour and good reversibility on these devices, and explore several intermediate resistance states that are accessible during both amorphization and recrystallization pathways. Existence of multiple resistance states, along with ultralow-power switching and scaling capabilities, makes this approach promising in context of low-power memory and neuromorphic computation.

  13. All-optical control of ultrafast photocurrents in unbiased graphene

    PubMed Central

    Obraztsov, Petr A.; Kaplas, Tommi; Garnov, Sergey V.; Kuwata-Gonokami, Makoto; Obraztsov, Alexander N.; Svirko, Yuri P.

    2014-01-01

    Graphene has recently become a unique playground for studying light-matter interaction effects in low-dimensional electronic systems. Being of strong fundamental importance, these effects also open a wide range of opportunities in photonics and optoelectronics. In particular, strong and broadband light absorption in graphene allows one to achieve high carrier densities essential for observation of nonlinear optical phenomena. Here, we make use of strong photon-drag effect to generate and optically manipulate ultrafast photocurrents in graphene at room temperature. In contrast to the recent reports on injection of photocurrents in graphene due to external or built-in electric field effects and by quantum interference, we force the massless charge carriers to move via direct transfer of linear momentum from photons of incident laser beam to excited electrons in unbiased sample. Direction and amplitude of the drag-current induced in graphene are determined by polarization, incidence angle and intensity of the obliquely incident laser beam. We also demonstrate that the irradiation of graphene with two laser beams of the same wavelength offers an opportunity to manipulate the photocurrents in time domain. The obtained all-optical control of the photocurrents opens new routes towards graphene based high-speed and broadband optoelectronic devices. PMID:24500084

  14. High-order all-optical differential equation solver based on microring resonators.

    PubMed

    Tan, Sisi; Xiang, Lei; Zou, Jinghui; Zhang, Qiang; Wu, Zhao; Yu, Yu; Dong, Jianji; Zhang, Xinliang

    2013-10-01

    We propose and experimentally demonstrate a feasible integrated scheme to solve all-optical differential equations using microring resonators (MRRs) that is capable of solving first- and second-order linear ordinary differential equations with different constant coefficients. Employing two cascaded MRRs with different radii, an excellent agreement between the numerical simulation and the experimental results is obtained. Due to the inherent merits of silicon-based devices for all-optical computing, such as low power consumption, small size, and high speed, this finding may motivate the development of integrated optical signal processors and further extend optical computing technologies. PMID:24081039

  15. Voltage-impulse-induced non-volatile ferroelastic switching of ferromagnetic resonance for reconfigurable magnetoelectric microwave devices.

    PubMed

    Liu, Ming; Howe, Brandon M; Grazulis, Lawrence; Mahalingam, Krishnamurthy; Nan, Tianxiang; Sun, Nian X; Brown, Gail J

    2013-09-20

    A critical challenge in realizing magnetoelectrics based on reconfigurable microwave devices, which is the ability to switch between distinct ferromagnetic resonances (FMR) in a stable, reversible and energy efficient manner, has been addressed. In particular, a voltage-impulse-induced two-step ferroelastic switching pathway can be used to in situ manipulate the magnetic anisotropy and enable non-volatile FMR tuning in FeCoB/PMN-PT (011) multiferroic heterostructures. PMID:23857709

  16. Elimination of high transient currents and electrode damage during electroformation of TiO2-based resistive switching devices

    NASA Astrophysics Data System (ADS)

    Meng Lu, Yi; Noman, Mohammad; Chen, Wenhao; Salvador, Paul A.; Bain, James A.; Skowronski, Marek

    2012-10-01

    Transient currents associated with electroforming TiO2-based resistive switching devices were measured using three distinct circuits designed to limit them, and they were correlated with physical changes in the top electrode using scanning electron microscopy. A transient current more than 10 times greater than expected was observed when only using the source meter to limit the current via the compliance set point. The large excursion arose from equipment delays and resulted in significant physical changes to the top electrode. An external resistor was used to decrease the excess transient current value to nearly zero, as long as parasitic capacitive discharges were also suppressed. Simultaneously, the physical changes to the top electrode were completely suppressed, indicating physical damage was related to Joule heating from the excess forming currents. The switching characteristics of all devices were similar, implying damage during electroformation of functional switches can be avoided by device/circuit design.

  17. Polarization encoded all-optical quaternary R-S flip-flop using binary latch

    NASA Astrophysics Data System (ADS)

    Chattopadhyay, Tanay; Roy, Jitendra Nath; Chakraborty, Ajoy Kumar

    2009-04-01

    The developments of different multi-valued logic (MVL) systems have received considerable interests in recent years all over the world. In electronics, efforts have already been made to incorporate multi-valued system in logic and arithmetic data processing. But, very little efforts have been given in realization of MVL with optics. In this paper we present novel designs of certain all-optical circuits that can be used for realizing multi-valued logic functions. Polarization encoded all-optical quaternary (4-valued) R-S flip-flop is proposed and described. Two key circuits (all-optical encoder/decoder and a binary latch) are designed first. They are used to realize quaternary flip-flop in all-optical domain. Here the different quaternary logical states are represented by different polarized state of light. Terahertz Optical Asymmetric Demultiplexer (TOAD) based interferometric switch can take an important role. Computer simulation result confirming described methods and conclusion are given in this paper.

  18. All-optical quality-of-signal monitoring in real time

    NASA Astrophysics Data System (ADS)

    Anderson, Betty Lise; Abou-Galala, Feras; Rabb, David; Durresi, Arjan

    2003-08-01

    An new optical correlator containing a tapped delay line with thousands of taps is described. This enables ultra-high resolution correlation. We apply this to monitoring quality-of-signal by correlating the received, degraded bits with and un-degraded signal. The strength of the correlation signal, which is all optical, is proportional to the quality. Dispersion and attenuation can be evaluated in less than 100 ps at 40Gb/s, and jitter and noise in less than 100 ns. This is a significant improvement over minutes or even hours for bit-error-rate measurements. Simulations show good correspondence to eye-diagram measurements, the conventional (but slow) way to measure signal quality. If a network node can know the quality of all its links in real-time, it can re-route signals around poor links, and provide restoration and protection as well. The key to all this is an optical correlator with a very large number of taps in its internal tapped delay line. Our device uses a White cell and a fixed micro-mirror array. In a White cell, light bounces back and forth between three spherical mirrors. Multiple beams circulate in the same cell without interfering and are each refocused to a unique pattern of spots. We make the spots land on the micro-mirror array to switch between cells of slightly different lengths. Our current design provides 6550 possible delays for thousands of light beams, using only ten mirrors, a lens, and the micro-mirror array. We have developed two routing and protection protocols to exploit having this real-time information available to the network.

  19. Investigation of resistive switching behavior of Ag/SnOx/ITO device

    NASA Astrophysics Data System (ADS)

    Chen, Da; Huang, Shi-Hua

    2015-04-01

    SnOx thin film was deposited by reactive magnetron sputtering and the resistance switching behavior of Ag/SnOx/ITO was investigated. The endurance testing indicates that HRS resistance decreases with an increase in the number of cycles. After annealing, the memory performance is enhanced, and the ratio of the device resistance of HRS and LRS increases greatly. The abnormal transformation sequence from HRS to LRS was observed for the annealed device and can be explained by electron trapping and detrapping based on the analysis of x-ray diffraction and the Raman spectrum. The temperature-dependent I-V measurement indicates that the thermal activation process is responsible for the temperature range of 300 to 200 K however, the carrier transport can be ascribed to the nearest-neighbor hopping conduction mechanism for the temperature range of 200 to 100 K. The general conduction mechanism of Ag/SnOx/ITO device can be elucidated by the trap-controlled space charge limited conduction model, and the conductive schematic in the SET and RESET processes has been given.

  20. Integrated elastomeric components for autonomous regulation of sequential and oscillatory flow switching in microfluidic devices

    NASA Astrophysics Data System (ADS)

    Mosadegh, Bobak; Kuo, Chuan-Hsien; Tung, Yi-Chung; Torisawa, Yu-Suke; Bersano-Begey, Tommaso; Tavana, Hossein; Takayama, Shuichi

    2010-06-01

    A critical need for enhancing the usability and capabilities of microfluidic technologies is the development of standardized, scalable and versatile control systems. Electronically controlled valves and pumps typically used for dynamic flow regulation, although useful, can limit convenience, scalability and robustness. This shortcoming has motivated the development of device-embedded non-electrical flow-control systems. Existing approaches to regulate operation timing on-chip, however, still require external signals such as timed generation of fluid flow, bubbles, liquid plugs or droplets or an alteration of chemical compositions or temperature. Here, we describe a strategy to provide device-embedded flow switching and clocking functions. Physical gaps and cavities interconnected by holes are fabricated into a three-layer elastomer structure to form networks of fluidic gates that can spontaneously generate cascading and oscillatory flow output using only a constant flow of Newtonian fluids as the device input. The resulting microfluidic substrate architecture is simple, scalable and should be applicable to various materials. This flow-powered fluidic gating scheme brings the autonomous signal processing ability of microelectronic circuits to microfluidics where there is the added diversity in current information of having distinct chemical or particulate species and richness in current operation of having chemical reactions and physical interactions.

  1. Hybrid aluminum and indium conducting filaments for nonpolar resistive switching of Al/AlOx/indium tin oxide flexible device

    NASA Astrophysics Data System (ADS)

    Yuan, Fang; Wang, Jer-Chyi; Zhang, Zhigang; Ye, Yu-Ren; Pan, Liyang; Xu, Jun; Lai, Chao-Sung

    2014-02-01

    The nonpolar resistive switching characteristics of an Al/AlOx/indium tin oxide (ITO) device on a plastic flexible substrate are investigated. By analyzing the electron diffraction spectroscopy results and thermal coefficient of resistivity, it is discovered that the formation of aluminum and indium conducting filaments in AlOx film strongly depends on the polarity of the applied voltage. The metal ions arising from the Al and ITO electrodes respectively govern the resistive switching in corresponding operation polarity. After 104 times of mechanical bending, the device can perform satisfactorily in terms of resistance distribution, read sequence of high and low resistive states, and thermal retention properties.

  2. Pt/WO3/FTO memristive devices with recoverable pseudo-electroforming for time-delay switches in neuromorphic computing.

    PubMed

    Shi, Tuo; Yin, Xue-Bing; Yang, Rui; Guo, Xin

    2016-04-14

    A recoverable pseudo-electroforming process was discovered in Pt/WO3/FTO devices. Unlike conventional electroforming, which is usually destructive, pseudo-electroforming can be recovered when the electrical stimulation is removed. Furthermore, the time-dependent recovery process can be tuned by diverse voltage pulses applied in pseudo-electroforming; therefore, the device can be used as a time-delay switch in memristor-based neuromorphic networks. This "volatile" electroforming process can be attributed to the high oxygen vacancy concentration in the fluorine-doped tin oxide (FTO) bottom electrode, which acts as a non-blocking electrode in the resistive switching. PMID:26996120

  3. High optical and switching performance electrochromic devices based on a zinc oxide nanowire with poly(methyl methacrylate) gel electrolytes

    NASA Astrophysics Data System (ADS)

    Chun, Young Tea; Neeves, Matthew; Smithwick, Quinn; Placido, Frank; Chu, Daping

    2014-11-01

    High performance electrochromic devices have been fabricated and demonstrated utilizing a solid polymer electrolyte and zinc oxide (ZnO) nanowire (NW) array counter electrode. The poly(methyl methacrylate) based polymer electrolyte was spin coated upon hydrothermally grown ZnO NW array counter electrodes, while electron beam evaporated NiOx thin films formed the working electrodes. Excellent optical contrast and switching speeds were observed in the fabricated devices with active areas of 2 cm2, exhibiting an optical contrast of 73.11% at the wavelength of 470 nm, combined with a fast switching time of 0.2 s and 0.4 s for bleaching and coloration, respectively.

  4. All-optical signal processing using dynamic Brillouin gratings

    NASA Astrophysics Data System (ADS)

    Santagiustina, Marco; Chin, Sanghoon; Primerov, Nicolay; Ursini, Leonora; Thévenaz, Luc

    2013-04-01

    The manipulation of dynamic Brillouin gratings in optical fibers is demonstrated to be an extremely flexible technique to achieve, with a single experimental setup, several all-optical signal processing functions. In particular, all-optical time differentiation, time integration and true time reversal are theoretically predicted, and then numerically and experimentally demonstrated. The technique can be exploited to process both photonic and ultra-wide band microwave signals, so enabling many applications in photonics and in radio science.

  5. All-optical signal processing using dynamic Brillouin gratings

    PubMed Central

    Santagiustina, Marco; Chin, Sanghoon; Primerov, Nicolay; Ursini, Leonora; Thévenaz, Luc

    2013-01-01

    The manipulation of dynamic Brillouin gratings in optical fibers is demonstrated to be an extremely flexible technique to achieve, with a single experimental setup, several all-optical signal processing functions. In particular, all-optical time differentiation, time integration and true time reversal are theoretically predicted, and then numerically and experimentally demonstrated. The technique can be exploited to process both photonic and ultra-wide band microwave signals, so enabling many applications in photonics and in radio science. PMID:23549159

  6. Resistive Switching in Al/Al2O3/TiO2/Al/PES Flexible Device for Nonvolatile Memory Application.

    PubMed

    Lin, Chun-Chieh; Lee, Wang-Ying; Lee, Han-Tang

    2016-05-01

    Resistive switching memory devices with superior properties are possibly used in next-generation nonvolatile memory to replace the flash memory. In addition, flexible electronics has also attracted much attention because of its light-weight and flexibility. Therefore, an Al/Al2O3/TiO2/Al/PES flexible resistive switching memory is employed in this study. The resistive switching characteristics and stability of the flexible device are improved by inserting the Al2O3 film. The resistive switching of the flexible device can be repeated over hundreds of times after the bending test. A possible resistive switching model of the flexible device is also proposed. In addition, the non-volatility of the flexible device is demonstrated. Based on our research results, the proposed Al2O3/TiO2-based resistive switching memory is possibly used in next-generation flexible electronics and nonvolatile memory applications. PMID:27483828

  7. Iii-V Compound Multiple Quantum Well Based Modulator and Switching Devices.

    NASA Astrophysics Data System (ADS)

    Hong, Songcheol

    A general formalism to study the absorption and photocurrent in multiple quantum well is provided with detailed consideration of quantum confined Stark shift, exciton binding energy, line broadening, tunneling, polarization, and strain effects. Results on variation of exciton size, binding energies and transition energies as a function electric field and well size have been presented. Inhomogeneous line broadening of exciton lines due to interface roughness, alloy disorder and well to well size fluctuation is calculated. The potential of material tailoring by introducing strain for specific optical response is discussed. Theoretical and experimental results on excitonic and band-to-band absorption spectra in strained multi-quantum well structures are shown. I also report on polarization dependent optical absorption for excitonic and interband transitions in lattice matched and strained multiquantum well structures in presence of transverse electric field. Photocurrent in a p-i(MQW)-n diode with monochromatic light is examined with respect to different temperatures and intensities. The negative resistance of I-V characteristic of the p-i-n diode is based on the quantum confined Stark effect of the heavy hole excitonic transition in a multiquantum well. This exciton based photocurrent characteristic allows efficient switching. A general purpose low power optical logic device using the controller-modulator concept bas been proposed and realized. The controller is a heterojunction phototransistor with multiquantum wells in the base-collector depletion region. This allows an amplified photocurrent controlled voltage feedback with low light intensity levels. Detailed analysis of the sensitivity of this device in various modes of operation is studied. Studies are also presented on the cascadability of the device as well as its integrating -thresholding properties. A multiquantum well heterojunction bipolar transistor (MHBT), which has N^+ -p^+-i(MQW)-N structure has been

  8. Optical switches and switching methods

    DOEpatents

    Doty, Michael

    2008-03-04

    A device and method for collecting subject responses, particularly during magnetic imaging experiments and testing using a method such as functional MRI. The device comprises a non-metallic input device which is coupled via fiber optic cables to a computer or other data collection device. One or more optical switches transmit the subject's responses. The input device keeps the subject's fingers comfortably aligned with the switches by partially immobilizing the forearm, wrist, and/or hand of the subject. Also a robust nonmetallic switch, particularly for use with the input device and methods for optical switching.

  9. All-Optical Ultrasound Transducers for High Resolution Imaging

    NASA Astrophysics Data System (ADS)

    Sheaff, Clay Smith

    High frequency ultrasound (HFUS) has increasingly been used within the past few decades to provide high resolution (< 200 mum) imaging in medical applications such as endoluminal imaging, intravascular imaging, ophthalmology, and dermatology. The optical detection and generation of HFUS using thin films offers numerous advantages over traditional piezoelectric technology. Circumvention of an electronic interface with the device head is one of the most significant given the RF noise, crosstalk, and reduced capacitance that encumbers small-scale electronic transducers. Thin film Fabry-Perot interferometers - also known as etalons - are well suited for HFUS receivers on account of their high sensitivity, wide bandwidth, and ease of fabrication. In addition, thin films can be used to generate HFUS when irradiated with optical pulses - a method referred to as Thermoelastic Ultrasound Generation (TUG). By integrating a polyimide (PI) film for TUG into an etalon receiver, we have created for the first time an all-optical ultrasound transducer that is both thermally stable and capable of forming fully sampled 2-D imaging arrays of arbitrary configuration. Here we report (1) the design and fabrication of PI-etalon transducers; (2) an evaluation of their optical and acoustic performance parameters; (3) the ability to conduct high-resolution imaging with synthetic 2-D arrays of PI-etalon elements; and (4) work towards a fiber optic PI-etalon for in vivo use. Successful development of a fiber optic imager would provide a unique field-of-view thereby exposing an abundance of prospects for minimally-invasive analysis, diagnosis, and treatment of disease.

  10. Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis

    NASA Astrophysics Data System (ADS)

    Younis, Adnan; Chu, Dewei; Li, Sean

    2015-09-01

    Further progress in high-performance microelectronic devices relies on the development of novel materials and device architectures. However, the components and designs that are currently in use have reached their physical limits. Intensive research efforts, ranging from device fabrication to performance evaluation, are required to surmount these limitations. In this paper, we demonstrate that the superior bipolar resistive switching characteristics of a CeO2:Gd-based memory device can be manipulated by means of UV radiation, serving as a new degree of freedom. Furthermore, the metal oxide-based (CeO2:Gd) memory device was found to possess electrical and neuromorphic multifunctionalities. To investigate the underlying switching mechanism of the device, its plasticity behaviour was studied by imposing weak programming conditions. In addition, a short-term to long-term memory transition analogous to the forgetting process in the human brain, which is regarded as a key biological synaptic function for information processing and data storage, was realized. Based on a careful examination of the device’s retention behaviour at elevated temperatures, the filamentary nature of switching in such devices can be understood from a new perspective.

  11. Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis

    PubMed Central

    Younis, Adnan; Chu, Dewei; Li, Sean

    2015-01-01

    Further progress in high-performance microelectronic devices relies on the development of novel materials and device architectures. However, the components and designs that are currently in use have reached their physical limits. Intensive research efforts, ranging from device fabrication to performance evaluation, are required to surmount these limitations. In this paper, we demonstrate that the superior bipolar resistive switching characteristics of a CeO2:Gd-based memory device can be manipulated by means of UV radiation, serving as a new degree of freedom. Furthermore, the metal oxide-based (CeO2:Gd) memory device was found to possess electrical and neuromorphic multifunctionalities. To investigate the underlying switching mechanism of the device, its plasticity behaviour was studied by imposing weak programming conditions. In addition, a short-term to long-term memory transition analogous to the forgetting process in the human brain, which is regarded as a key biological synaptic function for information processing and data storage, was realized. Based on a careful examination of the device’s retention behaviour at elevated temperatures, the filamentary nature of switching in such devices can be understood from a new perspective. PMID:26324073

  12. 20Gbit/s all-optical logic OR in terahertz optical asymmetric demultiplexer (TOAD)

    NASA Astrophysics Data System (ADS)

    Yan, Yumei; Wu, Jian; Lin, Jintong

    2005-01-01

    A scheme for all-optical logic OR based on transparent teraherz optical asymmetric demultiplexer (transparent-TOAD) is proposed in this paper. In the transparent-TOAD, the SOA is biased at transparency and the gain recovery time determined by the intraband effect has the value of only a few picoseconds. Numerical analysis shows that the switching window of the transparent-TOAD is only about 0.54ps and the potential for ultrahigh speed all-optical logic processing is shown. Numerical demonstration is performed for 4-bit and 16-bit logic OR at 20Gbit/s. The results coincide with the OR truth table, showing high extinction ratio and no pattern dependency. Detailed analysis is carried out on the performance of the logic OR scheme.

  13. All-optical code routing in interconnected optical CDMA and WDM ring networks.

    PubMed

    Deng, Yanhua; Fok, Mable P; Prucnal, Paul R; Wang, Ting

    2010-11-01

    We propose an all-optical hybrid network composed of optical code division multiple access (CDMA) rings interconnecting through a reconfigurable wavelength division multiplexing (WDM) metro area ring. This network retains the advantages of both the optical CDMA and WDM techniques, including asynchronous access and differentiated quality of service, while removing the hard limit on the number of subscribers and increasing network flexibility. The all-optical network is enabled by using nonlinear optical loop mirrors in an add/drop router (ADR) that performs code conversion, dropping, and switching asynchronously. We experimentally demonstrate the functionalities of the ADR in the proposed scheme asynchronously and obtain error-free performance. The bit-error rate measurements show acceptable power penalties for different code routes. PMID:21042372

  14. All-optical microwave signal processing based on optical phase modulation

    NASA Astrophysics Data System (ADS)

    Zeng, Fei

    This thesis presents a theoretical and experimental study of optical phase modulation and its applications in all-optical microwave signal processing, which include all-optical microwave filtering, all-optical microwave mixing, optical code-division multiple-access (CDMA) coding, and ultrawideband (UWB) signal generation. All-optical microwave signal processing can be considered as the use of opto-electronic devices and systems to process microwave signals in the optical domain, which provides several significant advantages such as low loss, low dispersion, light weight, high time bandwidth products, and immunity to electromagnetic interference. In conventional approaches, the intensity of an optical carrier is modulated by a microwave signal based on direct modulation or external modulation. The intensity-modulated optical signal is then fed to a photonic circuit or system to achieve specific signal processing functionalities. The microwave signal being processed is usually obtained based on direct detection, i.e., an opto-electronic conversion by use of a photodiode. In this thesis, the research efforts are focused on the optical phase modulation and its applications in all-optical microwave signal processing. To avoid using coherent detection which is complicated and costly, simple and effective phase modulation to intensity modulation (PM-IM) conversion schemes are pursued. Based on a theoretical study of optical phase modulation, two approaches to achieving PM-IM conversions are proposed. In the first approach, the use of chromatic dispersion induced by a dispersive device to alter the phase relationships among the sidebands and the optical carrier of a phase-modulated optical signal to realize PM-IM conversion is investigated. In the second approach, instead of using a dispersive device, the PM-IM conversion is realized based on optical frequency discrimination implemented using an optical filter. We show that the proposed PM-IM conversion schemes can be

  15. Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode.

    PubMed

    Chen, Kai-Huang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Liang, Shu-Ping; Young, Tai-Fa; Syu, Yong-En; Sze, Simon M

    2016-12-01

    To discuss the optoelectronic effect on resistive random access memory (RRAM) devices, the bipolar switching properties and electron-hole pair generation behavior in the transparent indium tin oxide (ITO) electrode of Gd:SiO2 thin films under the ultraviolet (λ = 400 nm) and red-light (λ = 770 nm) illumination for high resistance state (HRS)/low resistance state (LRS) was observed and investigated. In dark environment, the Gd:SiO2 RRAM devices exhibited the ohmic conduction mechanism for LRS, exhibited the Schottky emission conduction and Poole-Frankel conduction mechanism for HRS. For light illumination effect, the operation current of the Gd:SiO2 RRAM devices for HRS/LRS was slightly increased. Finally, the electron-hole pair transport mechanism, switching conduction diagram, and energy band of the RRAM devices will be clearly demonstrated and explained. PMID:27117634

  16. Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode

    NASA Astrophysics Data System (ADS)

    Chen, Kai-Huang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Liang, Shu-Ping; Young, Tai-Fa; Syu, Yong-En; Sze, Simon M.

    2016-04-01

    To discuss the optoelectronic effect on resistive random access memory (RRAM) devices, the bipolar switching properties and electron-hole pair generation behavior in the transparent indium tin oxide (ITO) electrode of Gd:SiO2 thin films under the ultraviolet ( λ = 400 nm) and red-light ( λ = 770 nm) illumination for high resistance state (HRS)/low resistance state (LRS) was observed and investigated. In dark environment, the Gd:SiO2 RRAM devices exhibited the ohmic conduction mechanism for LRS, exhibited the Schottky emission conduction and Poole-Frankel conduction mechanism for HRS. For light illumination effect, the operation current of the Gd:SiO2 RRAM devices for HRS/LRS was slightly increased. Finally, the electron-hole pair transport mechanism, switching conduction diagram, and energy band of the RRAM devices will be clearly demonstrated and explained.

  17. Oxide thickness dependence of resistive switching characteristics for Ni/HfOx/Pt resistive random access memory device

    NASA Astrophysics Data System (ADS)

    Ito, Daisuke; Hamada, Yoshihumi; Otsuka, Shintaro; Shimizu, Tomohiro; Shingubara, Shoso

    2015-06-01

    The switching process of the conductive filament formed in Ni/HfOx/Pt resistive random access memory (ReRAM) devices were studied. We evaluated the oxide thickness dependence and temperature dependence of voltage for the Forming, Set and Reset operations for HfOx layers whose thickness are between 3.3 and 6.5 nm. The resistance of conductive filaments showed typical metallic behavior, which suggests Ni filament formation in the HfOx layer. There is a clear dependence of switching voltages for the Set and Reset processes on oxide thickness, which implies that the formation and rupture of conductive filaments occur in the entire thickness range of the HfOx layer. This finding differs from that of a previous study by Yang, which suggests the existence of a constant-thickness switching region. It is suggested that the thickness of the switching region in HfOx may be larger than 6.5 nm.

  18. Effect of defect content on the unipolar resistive switching characteristics of ZnO thin film memory devices

    NASA Astrophysics Data System (ADS)

    Zhang, Feng; Li, Xiaomin; Gao, Xiangdong; Wu, Liang; Zhuge, Fuwei; Wang, Qun; Liu, Xinjun; Yang, Rui; He, Yong

    2012-09-01

    In this study, unipolar resistive switching (URS) characteristics in ZnO thin film memory devices were systematically investigated with variable defect content. ZnO films displayed typically URS behavior while oxygen-deficient ZnO1-x films did not show resistive switching effects. The devices with two intentional Ohmic interfaces still show URS. These results show that appearance of URS behavior can be dominated by initial oxygen vacancy content in ZnO thin films. Modest increase in oxygen vacancy content in ZnO films will lead to forming-free and narrower distributions of switching parameters (set and reset voltage, high and low resistance states). It indicates that controlling the initial oxygen vacancy content was an effective method to enhance the URS performance.

  19. Design of an All-Optical Network Based on LCoS Technologies

    NASA Astrophysics Data System (ADS)

    Cheng, Yuh-Jiuh; Shiau, Yhi

    2016-06-01

    In this paper, an all-optical network composed of the ROADMs (reconfigurable optical add-drop multiplexer), L2/L3 optical packet switches, and the fiber optical cross-connection for fiber scheduling and measurement based on LCoS (liquid crystal on silicon) technologies is proposed. The L2/L3 optical packet switches are designed with optical output buffers. Only the header of optical packets is converted to electronic signals to control the wavelength of input ports and the packet payloads can be transparently destined to their output ports. An optical output buffer is designed to queue the packets when more than one incoming packet should reach to the same destination output port. For preserving service-packet sequencing and fairness of routing sequence, a priority scheme and a round-robin algorithm are adopted at the optical output buffer. The wavelength of input ports is designed for routing incoming packets using LCoS technologies. Finally, the proposed OFS (optical flow switch) with input buffers can quickly transfer the big data to the output ports and the main purpose of the OFS is to reduce the number of wavelength reflections. The all-optical content delivery network is comprised of the OFSs for a large amount of audio and video data transmissions in the future.

  20. All-optical logic gates based on cross-phase modulation in an asymmetric coupler

    NASA Astrophysics Data System (ADS)

    Li, Qiliang; Yuan, Hongliang

    2014-05-01

    In this paper we propose an operation of an all-optical logical gate based on an asymmetric nonlinear directional coupler operating with the cross-phase modulation. Two-input OR and XOR gates and a new logical operation based on an asymmetric nonlinear directional coupler, which can be applied to transmission and processing of signals in all-optical systems, are examined. Initially, we evaluate the effect of the pump power on switching. We import a pulse into the nonlinear directional coupler, meanwhile adding a pump light via wavelength division multiplex in order to take advantage of Kerr effect and produce the cross-phase modulation. In this situation, we analyze two possible situations for the two-input logical gate, and draw a switching characteristic curve via Matlab. Finally, we define the truth table and it is clear that OR and XOR logic gates and a new logical operation can be realized by changing the pump power. Next the investigation also indicates that to change the input pulse's phase switching can be realized. In the same way, we define the truth table and it can be observed that different logic gates are realized.

  1. Ionic current rectification, breakdown, and switching in heterogeneous oxide nanofluidic devices.

    PubMed

    Cheng, Li-Jing; Guo, L Jay

    2009-03-24

    We investigate several ion transport behaviors in sub-20 nm nanofluidic channels consisting of heterogeneous oxide materials. By utilizing distinct isoelectric points of SiO2 and Al2O3 surfaces and photolithography to define the charge distribution, nanofluidic channels containing positively and negatively charged surfaces are created to form an abrupt junction. This method provides much more robust surface charges than previous approaches by surface chemical treatment. The fabricated nanofluidic diodes exhibit high rectification of ion current and achieve record-high rectification factors (ratio of forward current to reverse current) of over 300. The current-voltage property of the device follows the theoretical model quantitatively, except that at low ion concentrations the forward current degrades and the reverse current is greater than theoretical prediction, which can be attributed to access resistance and breakdown of water molecules. The breakdown effect characterized by a negative conductance followed by a rapid increase of current is observed in a double junction diode. The occurrence of the breakdown is found to be enhanced by the abruptness of the junction between the heterogeneous nanochannels. Finally, we demonstrate ionic switching in a three-terminal nanofluidic triode in which the ionic flow can be electrically regulated between different channel branches. The study provides insight into the ion transport behavior in nanofluidic devices containing heterogeneous surfaces. PMID:19220010

  2. Reverse bistable effect in ferroelectric liquid crystal devices with ultra-fast switching at low driving voltage.

    PubMed

    Guo, Qi; Zhao, Xiaojin; Zhao, Huijie; Chigrinov, V G

    2015-05-15

    In this Letter, reverse bistable effect with deep-sub-millisecond switching time is first reported in ferroelectric liquid crystal (FLC) devices using a homogeneous photo-alignment technique. It is indicated by our experimental results that both the anchoring energy and the dielectric property of the FLC's alignment layer is critical for the existence of the reverse bistable effect. In addition, with the derived criteria of the reverse bistable effect, we quantitatively analyze the switching dynamics of the reverse bistable FLC and the transition condition between the traditional bistability and our presented reverse bistability. Moreover, the fabricated FLC device exhibits an ultra-fast switching of ∼160  μs and a high contrast ratio of 1000:1, both of which were measured at a low driving voltage of 11 V. The featured deep-sub-millisecond switching time is really advantageous for our presented reverse bistable FLC devices, which enables a significant quality improvement of the existing optical devices, as well as a wide range of new applications in photonics and display areas. PMID:26393753

  3. 49 CFR 213.235 - Inspection of switches, track crossings, and lift rail assemblies or other transition devices on...

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 49 Transportation 4 2012-10-01 2012-10-01 false Inspection of switches, track crossings, and lift rail assemblies or other transition devices on moveable bridges. 213.235 Section 213.235 Transportation Other Regulations Relating to Transportation (Continued) FEDERAL RAILROAD ADMINISTRATION, DEPARTMENT OF TRANSPORTATION TRACK SAFETY...

  4. 49 CFR 213.235 - Inspection of switches, track crossings, and lift rail assemblies or other transition devices on...

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 49 Transportation 4 2011-10-01 2011-10-01 false Inspection of switches, track crossings, and lift rail assemblies or other transition devices on moveable bridges. 213.235 Section 213.235 Transportation Other Regulations Relating to Transportation (Continued) FEDERAL RAILROAD ADMINISTRATION, DEPARTMENT OF TRANSPORTATION TRACK SAFETY...

  5. 76 FR 57075 - In the Matter of Certain Lighting Control Devices Including Dimmer Switches and Parts Thereof (IV...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-09-15

    .... (``Lutron'') of Coopersburg, Pennsylvania. 76 FR 35015-16. The complaint alleges violations of section 337... COMMISSION In the Matter of Certain Lighting Control Devices Including Dimmer Switches and Parts Thereof (IV... sale for importation, and the sale within the United States after importation of certain...

  6. All-optical signal processing technique for secure optical communication

    NASA Astrophysics Data System (ADS)

    Qian, Feng-chen; Su, Bing; Ye, Ya-lin; Zhang, Qian; Lin, Shao-feng; Duan, Tao; Duan, Jie

    2015-10-01

    Secure optical communication technologies are important means to solve the physical layer security for optical network. We present a scheme of secure optical communication system by all-optical signal processing technique. The scheme consists of three parts, as all-optical signal processing unit, optical key sequence generator, and synchronous control unit. In the paper, all-optical signal processing method is key technology using all-optical exclusive disjunction (XOR) gate based on optical cross-gain modulation effect, has advantages of wide dynamic range of input optical signal, simple structure and so on. All-optical XOR gate composed of two semiconductor optical amplifiers (SOA) is a symmetrical structure. By controlling injection current, input signal power, delay and filter bandwidth, the extinction ratio of XOR can be greater than 8dB. Finally, some performance parameters are calculated and the results are analyzed. The simulation and experimental results show that the proposed method can be achieved over 10Gbps optical signal encryption and decryption, which is simple, easy to implement, and error-free diffusion.

  7. All-Optical Logic Gates in Organic Materials

    NASA Technical Reports Server (NTRS)

    Adbeldayem, H. A.; Frazier, D. O.; Witherow, W.; Paley, M. S.; Penn, B.; Banks, E.; Rose, M. Franklin (Technical Monitor)

    2001-01-01

    A picosecond switch made of polydiacetylene thin film coated on the interior of a 50-micron diameter hollow fiber and a nanosecond switch made of a micron thick film of phthalocyanine on glass were developed.

  8. Simple novel all-optical half-adder

    NASA Astrophysics Data System (ADS)

    Chen, Zhixin

    2010-04-01

    On the basis of Sagnac interferometric structure, a simple novel ultrafast scheme of all-optical half-adder is proposed. The structure comprises two of the same balanced terahertz optical asymmetric demultiplexers (TOADs). One TOAD is utilized to achieve an all-optical XOR gate, which is logic SUM. The other is utilized to obtain an all-optical AND gate, which is logic CARRY. Logical SUM and CARRY are simultaneously realized at 80 Gbit/s. Through numerical analysis, the operating characteristics of the scheme are illustrated at 80 Gbit/s. Furthermore, the carrier recovery time of the semiconductor optical amplifier is no longer a crucial parameter to restrict the operation speed of this scheme.

  9. Spin-based all-optical quantum computation with quantum dots: Understanding and suppressing decoherence

    SciTech Connect

    Calarco, T.; Datta, A.; Fedichev, P.; Zoller, P.; Pazy, E.

    2003-07-01

    We present an all-optical implementation of quantum computation using semiconductor quantum dots. Quantum memory is represented by the spin of an excess electron stored in each dot. Two-qubit gates are realized by switching on trion-trion interactions between different dots. State selectivity is achieved via conditional laser excitation exploiting Pauli exclusion principle. Read out is performed via a quantum-jump technique. We analyze the effect on our scheme's performance of the main imperfections present in real quantum dots: exciton decay, hole mixing, and phonon decoherence. We introduce an adiabatic gate procedure that allows one to circumvent these effects and evaluate quantitatively its fidelity.

  10. Ultrafast all-optical NOR gate based on semiconductor optical amplifier and fiber delay interferometer

    NASA Astrophysics Data System (ADS)

    Xu, Jing; Zhang, Xinliang; Liu, Deming; Huang, Dexiu

    2006-10-01

    An ultrafast all-optical logic NOR gate based on a semiconductor optical amplifier (SOA) and a fiber delay interferometer (FDI) is presented. For high-speed input return-to-zero (RZ) signal, nonreturn-to-zero (NRZ) switching windows which satisfy Boolean NOR operation can be formed by properly choosing the delay time and the phase shift of FDI. 40Gb/s NOR operation has been demonstrated successfully with low control optical power. The factors that degrade the NOR operation have been discussed.

  11. Spectrally-efficient all-optical OFDM by WSS and AWG.

    PubMed

    Hoxha, J; Morosi, J; Shimizu, S; Martelli, P; Boffi, P; Wada, N; Cincotti, G

    2015-05-01

    We report on the transmission experiment of seven 12.5-GHz spaced all optical-orthogonal frequency division multiplexed (AO-OFDM) subcarriers over a 35-km fiber link, using differential quadrature phase shift keying (DQPSK) modulation and direct detection. The system does not require chromatic dispersion compensation, optical time gating at the receiver (RX) or cyclic prefix (CP), achieving the maximum spectral efficiency. We use a wavelength selective switch (WSS) at the transmitter (TX) to allow subcarrier assignment flexibility and optimal filter shaping; an arrayed waveguide grating (AWG) AO-OFDM demultiplexer is used at the RX, to reduce the system cost and complexity. PMID:25969193

  12. Comparison between Pt/TiO2/Pt and Pt/TaO X /TaO Y /Pt based bipolar resistive switching devices

    NASA Astrophysics Data System (ADS)

    Ho, Patrick W. C.; Odai Hatem, Firas; Almurib, Haider Abbas F.; Nandha Kumar, T.

    2016-06-01

    Nonvolatile memories have emerged in recent years and have become a leading candidate towards replacing dynamic and static random-access memory devices. In this article, the performances of TiO2 and TaO2 nonvolatile memristive devices were compared and the factors that make TaO2 memristive devices better than TiO2 memristive devices were studied. TaO2 memristive devices have shown better endurance performances (108 times more switching cycles) and faster switching speed (5 times) than TiO2 memristive devices. Electroforming of TaO2 memristive devices requires ∼4.5 times less energy than TiO2 memristive devices of a similar size. The retention period of TaO2 memristive devices is expected to exceed 10 years with sufficient experimental evidence. In addition to comparing device performances, this article also explains the differences in physical device structure, switching mechanism, and resistance switching performances of TiO2 and TaO2 memristive devices. This article summarizes the reasons that give TaO2 memristive devices the advantage over TiO2 memristive devices, in terms of electroformation, switching speed, and endurance.

  13. All-optical pseudorandom bit sequences generator based on TOADs

    NASA Astrophysics Data System (ADS)

    Sun, Zhenchao; Wang, Zhi; Wu, Chongqing; Wang, Fu; Li, Qiang

    2016-03-01

    A scheme for all-optical pseudorandom bit sequences (PRBS) generator is demonstrated with optical logic gate 'XNOR' and all-optical wavelength converter based on cascaded Tera-Hertz Optical Asymmetric Demultiplexer (TOADs). Its feasibility is verified by generation of return-to-zero on-off keying (RZ-OOK) 263-1 PRBS at the speed of 1 Gb/s with 10% duty radio. The high randomness of ultra-long cycle PRBS is validated by successfully passing the standard benchmark test.

  14. Fabrication and resistive switching characteristics of high compact Ga-doped ZnO nanorod thin film devices

    NASA Astrophysics Data System (ADS)

    Yao, I.-Chuan; Lee, Dai-Ying; Tseng, Tseung-Yuen; Lin, Pang

    2012-04-01

    This study investigates the resistive switching behavior of Ga-doped ZnO (GZO) nanorod thin films with various Ga/Zn molar ratios. Vertically well-aligned and uniform GZO nanorod thin films were successfully grown on Au/Ti/SiO2/p-Si substrates using an aqueous solution method. X-ray diffraction (XRD) results indicate that GZO nanorods have [0001] highly preferred orientation. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) observations show the formation of highly ordered and dense nanorod thin films. These compact GZO nanorod thin films can be used to make resistive switching memory devices. Such memory devices can be reversibly switched between ON and OFF states, with a stable resistance ratio of ten times, narrow dispersion of ON and OFF voltages, and good endurance performance of over 100 cycles. The resistive switching mechanism in these devices is related to the formation and rupture of conducting filaments consisting of oxygen vacancies, occurring at interfaces between GZO nanorods (grain boundaries). Results show that the resulting compact GZO nanorod thin films have a high potential for resistive memory applications.

  15. Analysis of all-optically tunable functionalities in subwavelength periodic structures by the Fourier modal method

    NASA Astrophysics Data System (ADS)

    Bej, Subhajit; Tervo, Jani; Francés, Jorge; Svirko, Yuri P.; Turunen, Jari

    2016-05-01

    We propose the nonlinear Fourier Modal Method (FMM) [J. Opt. Soc. Am. B 31, 2371 (2014)] as a convenient and versatile numerical tool for the design and analysis of grating based next generation all-optical devices. Here, we include several numerical examples where the FMM is used to simulate all-optically tunable functionalities in sub-wavelength periodic structures. At first, we numerically investigate a 1-D periodic nonlinear binary grating with amorphous TiO2. We plot the diffraction efficiency in the transmitted orders against the structure depth for normally incident plane wave. Change in diffraction efficiencies for different incident field amplitudes are evident from the plots. We verify the accuracy of our implementation by comparing our results with the results obtained with the nonlinear Split Field-Finite Difference Time Domain (SF-FDTD) method. Next we repeat the same experiment with vertically standing amorphous Titanium dioxide (TiO2) nanowire arrays grown on top of quartz which are periodic in two mutually perpendicular directions and examine the efficiencies in the direct transmitted light for different incident field amplitudes. Our third example includes analysis of a form birefringent linear grating with Kerr medium. With FMM we demonstrate that the birefringence of such a structure can be tuned by all-optical means. As a final example, we design a narrow band Guided Mode Resonance Filter (GMRF). Numerical experiments based on the nonlinear FMM reveal that the spectral tunability of such a filter can be obtained by all-optical means.

  16. Threshold switching behavior of Ag-Si based selector device and hydrogen doping effect on its characteristics

    SciTech Connect

    Yoo, Jongmyung; Woo, Jiyong; Song, Jeonghwan; Hwang, Hyunsang

    2015-12-15

    The effect of hydrogen treatment on the threshold switching property in a Ag/amorphous Si based programmable metallization cells was investigated for selector device applications. Using the Ag filament formed during motion of Ag ions, a steep-slope (5 mV/dec.) for threshold switching with higher selectivity (∼10{sup 5}) could be achieved. Because of the faster diffusivity of Ag atoms, which are inside solid-electrolytes, the resulting Ag filament could easily be dissolved under low current regime, where the Ag filament possesses weak stability. We found that the dissolution process could be further enhanced by hydrogen treatment that facilitated the movement of the Ag atoms.

  17. All-optical tuning of a nonlinear silicon microring assisted microwave photonic filter: theory and experiment.

    PubMed

    Long, Yun; Wang, Jian

    2015-07-13

    We propose and demonstrate an all-optical tuning mechanism to tune the response of a microwave photonic filter (MPF) based on a nonlinear silicon microring resonator (MRR). The tuning mechanism relies on the optical nonlinearities induced resonant wavelength shift in the silicon MRR, leading to the change of frequency difference between the optical carrier frequency and resonant frequency of the silicon MRR. A detailed theoretical model is established to describe the operation of the proposed all-optical tunable MPF. Two cases are studied in the experiment, i.e. the optical carrier frequency is located at the left or right side of the MRR resonant frequency. Both forward and backward pumping configurations in each case are demonstrated. Using the fabricated silicon MRR and exploiting light to control light, the central frequency of the notch MPF can be flexibly tuned by adjusting the pump light power. Moreover, the presented all-optical tuning mechanism might also facilitate interesting applications such as microwave switching and microwave modulation. PMID:26191838

  18. All-optical transistor using a photonic-crystal cavity with an active Raman gain medium

    NASA Astrophysics Data System (ADS)

    Arkhipkin, V. G.; Myslivets, S. A.

    2013-09-01

    We propose a design of an all-optical transistor based on a one-dimensional photonic-crystal cavity doped with a four-level N-type active Raman gain medium. The calculated results show that in a photonic-crystal cavity of this kind transmission and reflection of the probe (Raman) beam are strongly dependent on the optical switching power. Transmission and reflection of the probe beam can be greatly amplified or attenuated. Therefore the optical switching field can serve as a gate field of the transistor to effectively control propagation of the weak probe field. It is shown that the group velocity of the probe pulse can be controlled in the range from subluminal (slow light) to superluminal (fast light).

  19. Oscillations of a capillary switch used as a miniature opto-fluidic device

    NASA Astrophysics Data System (ADS)

    Ramalingam, Santhosh; Basaran, Osman

    2009-11-01

    A capillary switch (CS) is a continuous volume of liquid consisting of a sessile and a pendant drop that are coupled through a liquid filled hole in a plate. When capillary force is much larger than body forces such as gravity, this simple, coupled interfacial system exhibits multiple equilibrium states beyond a critical volume. Owing to its extremely small size, and hence large curvature and highly spherical air-liquid interface, an oscillating CS can potentially be used as a variable focus liquid lens in MEMS devices. The dynamics of an oscillating CS are studied by solving the full 3D axi-symmetric or 2D Navier-Stokes equation using the Galerkin finite element method (G/FEM). Applying means of forcing such as oscillating the pressure in the gas surrounding the sessile (pendant) drop and vibrating the plate, modes of oscillation are identified from resonances observed during frequency sweeps. The shift in the frequencies of oscillation of lower modes due to changes in parameters such as liquid volume, plate thickness, and liquid viscosity and surface tension are also studied. Results are shown to agree well with experimental observations by Hirsa and coworkers.

  20. KOMEKAMI Switch: A Wearable Input Device Based on the Concept of Affordance

    NASA Astrophysics Data System (ADS)

    Taniguchi, Kazuhiro; Nishikawa, Atsushi; Miyazaki, Fumio

    A wearable computing system plays a leading role in the ubiquitous computing era, in which computers are used at any place and at any time. Now the mobile multimedia communication technology based devices, such as mobile phone, handy-type PC, etc., have come to be used in such a broad range of areas, the features of wearable hands-free computing system, which people can constantly use in their daily life or workplace while doing some other job, are highly valued more than ever. However, the wearable computing system has not yet spread so widely owing to various factors. Among such factors is the delay in the development of human machine interface, which is applicable to the wearable computing system. We developed a blink based human-machine interface for the wearable computing system, called KOMEKAMI Switch. This interface makes it easy to manipulate machine with intentional movements of temple. User can constantly use machine with no interference, as well as with hands free. It is compact and lightweight, permitting ease of manufacturing at a low cost. It does not react to daily actions like conversation, diet, etc., other than movements intended to control the machine.

  1. Verification of redox-processes as switching and retention failure mechanisms in Nb:SrTiO3/metal devices.

    PubMed

    Baeumer, C; Raab, N; Menke, T; Schmitz, C; Rosezin, R; Müller, P; Andrä, M; Feyer, V; Bruchhaus, R; Gunkel, F; Schneider, C M; Waser, R; Dittmann, R

    2016-08-01

    Nanoscale redox reactions in transition metal oxides are believed to be the physical foundation of memristive devices, which present a highly scalable, low-power alternative for future non-volatile memory devices. The interface between noble metal top electrodes and Nb-doped SrTiO3 single crystals may serve as a prominent but not yet well-understood example of such memristive devices. In this report, we will present experimental evidence that nanoscale redox reactions and the associated valence change mechanism are indeed responsible for the resistance change in noble metal/Nb-doped SrTiO3 junctions with dimensions ranging from the micrometer scale down to the nanometer regime. Direct verification of the valence change mechanism is given by spectromicroscopic characterization of switching filaments. Furthermore, it is found that the resistance change over time is driven by the reoxidation of a previously oxygen-deficient region. The retention times of the low resistance states, accordingly, can be dramatically improved under vacuum conditions as well as through the insertion of a thin Al2O3 layer which prevents this reoxidation. These insights finally confirm the resistive switching mechanism at these interfaces and are therefore of significant importance for the study and application of memristive devices based on Nb-doped SrTiO3 as well as systems with similar switching mechanisms. PMID:27089047

  2. Unipolar resistive switching behaviors and mechanisms in an annealed Ni/ZrO2/TaN memory device

    NASA Astrophysics Data System (ADS)

    Tsai, Tsung-Ling; Ho, Tsung-Han; Tseng, Tseung-Yuen

    2015-01-01

    The effects of Ni/ZrO2/TaN resistive switching memory devices without and with a 400 °C annealing process on switching properties are investigated. The devices exhibit unipolar resistive switching behaviors with low set and reset voltages because of a large amount of Ni diffusion with no reaction with ZrO2 after the annealing process, which is confirmed by ToF-SIMS and XPS analyses. A physical model based on a Ni filament is constructed to explain such phenomena. The device that undergoes the 400 °C annealing process exhibits an excellent endurance of more than 1.5  ×  104 cycles. The improvement can be attributed to the enhancement of oxygen ion migration along grain boundaries, which result in less oxygen ion consumption during the reset process. The device also performs good retention up to 105 s at 150 °C. Therefore, it has great potential for high-density nonvolatile memory applications.

  3. A light-modified ferroelectric resistive switching behavior in Ag/BaMoO{sub 4}/FTO device at ambient temperature

    SciTech Connect

    Zhao, W.X.; Sun, B.; Liu, Y.H.; Wei, L.J.; Li, H.W.; Chen, P.

    2014-12-15

    BaMoO{sub 4} powder was prepared by a facile hydrothermal synthesis. And the BaMoO{sub 4}/FTO device was fabricated by a spin-coated method, in which the thickness of BaMoO{sub 4} layer is about 20 µm. The bipolar resistive switching effect has been observed in Ag/BaMoO{sub 4}/FTO device. Moreover, the resistive switching effect of the device is greatly improved by white light irradiation. The resistive switching behavior is explained by the polarization reversal that changes the charge distribution and modulates the Schottky barriers. - Graphical abstract: We fabricate a resistive switching device based on Ag/BaMoO{sub 4}/FTO, the device shows superior white-light controlled bipolar resistive switching memristive characteristics. - Highlights: • The BaMoO{sub 4} nanosquares powder was prepared by a hydrothermal synthesis. • The resistive switching of the Ag/BaMoO{sub 4}/FTO device was observed for the first time. • It is shown that the resistive switching is greatly improved under the white light irradiation. • The mechanism of resistive switching is attributed to the ferroelectric polarization reversal.

  4. Effect of visible-light illumination on resistive switching characteristics in Ag/Ce2W3O12/FTO devices

    NASA Astrophysics Data System (ADS)

    Sun, Bai; Li, Xiaoping; Liang, Dandan; Chen, Peng

    2016-01-01

    The resistive switching device is a fascinating candidate for next generation nonvolatile memories. In this Letter, we report a simple hydrothermal way to prepare Ce2W3O12 powder. Furthermore, we fabricated a resistive switching memory device with Ag/Ce2W3O12/fluorine-doped tin oxide (FTO) structure. Moreover, we observed the effect of visible-light illumination on resistive switching memory behaviour in Ag/Ce2W3O12/FTO devices. This Letter is useful for exploring the new potential materials for resistive switching memory device, and provides the visible-light as a new control method for resistive switching random access memory (RRAM).

  5. Time-domain analysis of spin-torque induced switching paths in nanoscale CoFeB/MgO/CoFeB magnetic tunnel junction devices

    SciTech Connect

    Heindl, R.; Rippard, W. H.; Russek, S. E.; Pufall, M. R.

    2014-12-28

    We performed thousands of single-shot, real-time measurements of spin-transfer-torque induced switching in nanoscale CoFeB/MgO/CoFeB magnetic tunnel junctions having in-plane magnetizations. Our investigation discovered a variety of switching paths occurring in consecutive, nominally identical switching trials of a single device. By mapping the voltage as a function of time to an effective magnetization angle, we determined that reversal of a single device occurs via a variety of thermally activated paths. Our results show a complex switching behavior that has not been captured by previous observations and cannot be fully explained within the simple macrospin model.

  6. Cascaded transformerless DC-DC voltage amplifier with optically isolated switching devices

    NASA Technical Reports Server (NTRS)

    Sridharan, Govind (Inventor)

    1993-01-01

    A very high voltage amplifier is provided in which plural cascaded banks of capacitors are switched by optically isolated control switches so as to be charged in parallel from the preceding stage or capacitor bank and to discharge in series to the succeeding stage or capacitor bank in alternating control cycles. The optically isolated control switches are controlled by a logic controller whose power supply is virtually immune to interference from the very high voltage output of the amplifier by the optical isolation provided by the switches, so that a very high voltage amplification ratio may be attained using many capacitor banks in cascade.

  7. Chip-integrated ultrawide-band all-optical logic comparator in plasmonic circuits

    PubMed Central

    Lu, Cuicui; Hu, Xiaoyong; Yang, Hong; Gong, Qihuang

    2014-01-01

    Optical computing opens up the possibility for the realization of ultrahigh-speed and ultrawide-band information processing. Integrated all-optical logic comparator is one of the indispensable core components of optical computing systems. Unfortunately, up to now, no any nanoscale all-optical logic comparator suitable for on-chip integration applications has been realized experimentally. Here, we report a subtle and effective technical solution to circumvent the obstacles of inherent Ohmic losses of metal and limited propagation length of SPPs. A nanoscale all-optical logic comparator suitable for on-chip integration applications is realized in plasmonic circuits directly. The incident single-bit (or dual-bit) logic signals can be compared and the comparison results are endowed with different logic encodings. An ultrabroad operating wavelength range from 700 to 1000 nm, and an ultrahigh output logic-state contrast-ratio of more than 25 dB are realized experimentally. No high power requirement is needed. Though nanoscale SPP light source and the logic comparator device are integrated into the same plasmonic chip, an ultrasmall feature size is maintained. This work not only paves a way for the realization of complex logic device such as adders and multiplier, but also opens up the possibility for realizing quantum solid chips based on plasmonic circuits. PMID:24463956

  8. Processing of Diamond for Integrated Optic Devices Using Q-Switched Nd:YAG Laser at Different Wavelengths

    NASA Astrophysics Data System (ADS)

    Sudheer, S. K.; Pillai, V. P. Mahadevan; Nayar, V. U.

    In the present investigation, a Q-switched Nd:YAG laser is used to study the various aspects of diamond processing for fabricating integrated optic and UV optoelectronic devices. Diamond is a better choice of substrate compared to silicon and gallium arsenide for the fabrication of waveguides to perform operations such as modulation, switching, multiplexing, and filtering, particularly in the ultraviolet spectrum. The experimental setup of the present investigation consists of two Q-Switched Nd:YAG lasers capable of operating at wavelengths of 1064 nm and 532 nm. The diamond cutting is performed using these two wavelengths by making the "V"-shaped groove with various opening angle. The variation of material loss of diamond during cutting is noted for the two wavelengths. The cut surface morphology and elemental and structural analysis of graphite formed during processing in both cases are compared using scanning electron microscopy (SEM) and laser Raman spectroscopy. Both the Q-Switched Nd:YAG laser systems (at 1064 nm and 532 nm) show very good performance in terms of peak-to-peak output stability, minimal spot diameter, smaller divergence angle, higher peak power in Q-switched mode, and good fundamental TEM00 mode quality for processing natural diamond stones. Less material loss and minimal micro cracks are achieved with wavelength 532 nm whereas a better diamond cut surface is achieved with processing at 1064 nm with minimum roughness.

  9. Large and robust resistive switching in co-sputtered Pt-(NiO-Al2O3)-Pt devices

    NASA Astrophysics Data System (ADS)

    Rebello, A.; Adeyeye, A. O.

    2016-02-01

    We have systematically investigated the resistive switching and electroresistance behavior in Pt-[NiO-Al2O3]-Pt (PNAP) capacitor-like structures. The PNAP devices show a large ON-OFF ratio (˜107), which is strongly dependent on the rate of the voltage sweep. Interestingly, the devices exhibit a robust electroresistance behavior in the high resistance OFF state and show an intriguing change of sign of rectification with increasing end voltage. Our direct measurement of the surface temperature of the sample during resistive switching indicates that RESET process is assisted by Joule heating effects. The results are explained on the basis of plausible interplay between Schottky barrier modification due to the trapped charge carriers at the metal-oxide interface and percolation effects of conducting nanofilaments.

  10. High optical and switching performance electrochromic devices based on a zinc oxide nanowire with poly(methyl methacrylate) gel electrolytes

    SciTech Connect

    Chun, Young Tea; Chu, Daping; Neeves, Matthew; Placido, Frank; Smithwick, Quinn

    2014-11-10

    High performance electrochromic devices have been fabricated and demonstrated utilizing a solid polymer electrolyte and zinc oxide (ZnO) nanowire (NW) array counter electrode. The poly(methyl methacrylate) based polymer electrolyte was spin coated upon hydrothermally grown ZnO NW array counter electrodes, while electron beam evaporated NiO{sub x} thin films formed the working electrodes. Excellent optical contrast and switching speeds were observed in the fabricated devices with active areas of 2 cm{sup 2}, exhibiting an optical contrast of 73.11% at the wavelength of 470 nm, combined with a fast switching time of 0.2 s and 0.4 s for bleaching and coloration, respectively.

  11. Ultralow-light-level all-optical transistor in rubidium vapor

    SciTech Connect

    Jing, Jietai Zhou, Zhifan; Liu, Cunjin; Qin, Zhongzhong; Fang, Yami; Zhou, Jun; Zhang, Weiping

    2014-04-14

    An all-optical transistor (AOT) is a device in which one light beam can efficiently manipulate another. It is the foundational component of an all-optical communication network. An AOT that can operate at ultralow light levels is especially attractive for its potential application in the quantum information field. Here, we demonstrate an AOT driven by a weak light beam with an energy density of 2.5 × 10{sup −5} photons/(λ{sup 2}/2π) (corresponding to 6  yJ/(λ{sup 2}/2π) and about 800 total photons) using the double-Λ four-wave mixing process in hot rubidium vapor. This makes it a promising candidate for ultralow-light-level optical communication and quantum information science.

  12. Bufferless Ultra-High Speed All-Optical Packet Routing

    NASA Astrophysics Data System (ADS)

    Muttagi, Shrihari; Prince, Shanthi

    2011-10-01

    All-Optical network is still in adolescence to cope up with steep rise in data traffic at the backbone network. Routing of packets in optical network depends on the processing speed of the All-Optical routers, thus there is a need to enhance optical processing to curb the delay in packet forwarding unit. In the proposed scheme, the header processing takes place on fly, therefore processing delay is at its lower limit. The objective is to propose a framework which establishes high data rate transmission with least latency in data routing from source to destination. The Routing table and optical header pulses are converted into Pulse Position (PP) format, thus reducing the complexity and in turn the processing delay. Optical pulse matching is exercised which results in multi-output transmission. This results in ultra-high speed packet forwarding unit. In addition, this proposed scheme includes dispersion compensation unit, which makes the data reliable.

  13. In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device.

    PubMed

    Tian, He; Zhao, Haiming; Wang, Xue-Feng; Xie, Qian-Yi; Chen, Hong-Yu; Mohammad, Mohammad Ali; Li, Cheng; Mi, Wen-Tian; Bie, Zhi; Yeh, Chao-Hui; Yang, Yi; Wong, H-S Philip; Chiu, Po-Wen; Ren, Tian-Ling

    2015-12-16

    A resistive random access memory (RRAM) device with a tunable switching window is demonstrated for the first time. The SET voltage can be continuously tuned from 0.27 to 4.5 V by electrical gating from -10 to +35 V. The gate-controlled bilayer graphene-electrode RRAM can function as 1D1R and potentially increase the RRAM density. PMID:26500160

  14. Ultrashort soliton switching based on coherent energy hiding.

    PubMed

    Romagnoli, M; Wabnitz, S; Zoccolotti, L

    1991-08-15

    Coherent coupling between light and atoms may be exploited for conceiving a novel class of all-optical signalprocessing devices without a direct counterpart in the continuous-wave regime. We show that the self-switching of ultrashort soliton pulses on resonance with a transition of doping centers in a slab waveguide directional coupler is based on nonlinear group-velocity (instead of the usual phase-velocity) changes. PMID:19776934

  15. Biochemical switching device: biomimetic approach and application to neural network study.

    PubMed

    Okamoto, M

    1992-06-01

    There are many examples of enzymes that share substrates or cofactors in a cyclic manner. Techniques have been developed that use cyclic enzyme systems to assay quantitatively small amounts of biochemical substances (cofactor, substrate), however, only a few studies of the control of these systems have been published. The author previously showed with computer simulations that cyclic enzyme systems have the reliability of ON-OFF types of operation (McCulloch-Pitts' neuronic equation) capable of storing short-memory, and the applicability for a switching circuit in a biocomputer. This paper introduces a unique switching mechanism of cyclic enzyme system (basic switching element), and next, building the integrated biochemical switching system being composed of the basic switching element, shows the physiological phenomenon termed 'selective elimination of synapses' generally produced as a result of low-frequency train of electrical stimuli to the synapses (Kuroda, Y. 1989) Neurochem. Int. 14, 309-319). PMID:1368350

  16. Nanoscale switch based on interacting molecular dipoles: Cooperativity can improve the device characteristics

    NASA Astrophysics Data System (ADS)

    Mafé, , Salvador; Manzanares, , José A.; Reiss, Howard

    2011-02-01

    We propose a nanoscale switch, giving a nonlinear function with two conductive states separated by a sharp transition region, on the basis of an array of molecular dipoles. We show theoretically that the local interactions between dipoles result in cooperative phenomena that can significantly improve the switching characteristics. We demonstrate the general validity of the concept in the cases of (i) an electrical switch robust to the finite size and variability effects inherent to the nanoscale and (ii) a sensing layer based on the voltage and ligand concentration dependence of the dipole array conductance.

  17. Verification of redox-processes as switching and retention failure mechanisms in Nb:SrTiO3/metal devices

    NASA Astrophysics Data System (ADS)

    Baeumer, C.; Raab, N.; Menke, T.; Schmitz, C.; Rosezin, R.; Müller, P.; Andrä, M.; Feyer, V.; Bruchhaus, R.; Gunkel, F.; Schneider, C. M.; Waser, R.; Dittmann, R.

    2016-07-01

    Nanoscale redox reactions in transition metal oxides are believed to be the physical foundation of memristive devices, which present a highly scalable, low-power alternative for future non-volatile memory devices. The interface between noble metal top electrodes and Nb-doped SrTiO3 single crystals may serve as a prominent but not yet well-understood example of such memristive devices. In this report, we will present experimental evidence that nanoscale redox reactions and the associated valence change mechanism are indeed responsible for the resistance change in noble metal/Nb-doped SrTiO3 junctions with dimensions ranging from the micrometer scale down to the nanometer regime. Direct verification of the valence change mechanism is given by spectromicroscopic characterization of switching filaments. Furthermore, it is found that the resistance change over time is driven by the reoxidation of a previously oxygen-deficient region. The retention times of the low resistance states, accordingly, can be dramatically improved under vacuum conditions as well as through the insertion of a thin Al2O3 layer which prevents this reoxidation. These insights finally confirm the resistive switching mechanism at these interfaces and are therefore of significant importance for the study and application of memristive devices based on Nb-doped SrTiO3 as well as systems with similar switching mechanisms.Nanoscale redox reactions in transition metal oxides are believed to be the physical foundation of memristive devices, which present a highly scalable, low-power alternative for future non-volatile memory devices. The interface between noble metal top electrodes and Nb-doped SrTiO3 single crystals may serve as a prominent but not yet well-understood example of such memristive devices. In this report, we will present experimental evidence that nanoscale redox reactions and the associated valence change mechanism are indeed responsible for the resistance change in noble metal/Nb-doped Sr

  18. Ultrafast all-optical technologies for bidirectional optical wireless communications.

    PubMed

    Jin, Xian; Hristovski, Blago A; Collier, Christopher M; Geoffroy-Gagnon, Simon; Born, Brandon; Holzman, Jonathan F

    2015-04-01

    In this Letter, a spherical retro-modulator architecture is introduced for operation as a bidirectional transceiver in passive optical wireless communication links. The architecture uses spherical retroreflection to enable retroreflection with broad directionality (2π steradians), and it uses all-optical beam interaction to enable modulation on ultrafast timescales (120 fs duration). The spherical retro-modulator is investigated from a theoretical standpoint and is fabricated for testing with three glasses, N-BK7, N-LASF9, and S-LAH79. It is found that the S-LAH79 structure provides the optimal refraction and nonlinearity for the desired retroreflection and modulation capabilities. PMID:25831390

  19. All-optical processing in coherent nonlinear spectroscopy

    SciTech Connect

    Oron, Dan; Dudovich, Nirit; Silberberg, Yaron

    2004-08-01

    In spectroscopy, the fingerprint of a substance is usually comprised of a sequence of spectral lines with characteristic frequencies and strengths. Identification of substances often involves postprocessing, where the measured spectrum is compared with tabulated fingerprint spectra. Here we suggest a scheme for nonlinear spectroscopy, where, through coherent control of the nonlinear process, the information from the entire spectrum can be practically collected into a single coherent entity. We apply this for all-optical analysis of coherent Raman spectra and demonstrate enhanced detection and effective background suppression using coherent processing.

  20. Inhalation errors due to device switch in patients with chronic obstructive pulmonary disease and asthma: critical health and economic issues

    PubMed Central

    Roggeri, Alessandro; Micheletto, Claudio; Roggeri, Daniela Paola

    2016-01-01

    Background Different inhalation devices are characterized by different techniques of use. The untrained switching of device in chronic obstructive pulmonary disease (COPD) and asthma patients may be associated with inadequate inhalation technique and, consequently, could lead to a reduction in adherence to treatment and limit control of the disease. The aim of this analysis was to estimate the potential economic impact related to errors in inhalation in patients switching device without adequate training. Methods An Italian real-practice study conducted in patients affected by COPD and asthma has shown an increase in health care resource consumption associated with misuse of inhalers. Particularly, significantly higher rates of hospitalizations, emergency room visits (ER), and pharmacological treatments (steroids and antimicrobials) were observed. In this analysis, those differences in resource consumption were monetized considering the Italian National Health Service (INHS) perspective. Results Comparing a hypothetical cohort of 100 COPD patients with at least a critical error in inhalation vs 100 COPD patients without errors in inhalation, a yearly excess of 11.5 hospitalizations, 13 ER visits, 19.5 antimicrobial courses, and 47 corticosteroid courses for the first population were revealed. In the same way, considering 100 asthma patients with at least a critical error in inhalation vs 100 asthma patients without errors in inhalation, the first population is associated with a yearly excess of 19 hospitalizations, 26.5 ER visits, 4.5 antimicrobial courses, and 21.5 corticosteroid courses. These differences in resource consumption could be associated with an increase in health care expenditure for INHS, due to inhalation errors, of €23,444/yr in COPD and €44,104/yr in asthma for the considered cohorts of 100 patients. Conclusion This evaluation highlights that misuse of inhaler devices, due to inadequate training or nonconsented switch of inhaled medications

  1. Electron transfer at the contact between Al electrode and gold nanoparticles of polymer: Nanoparticle resistive switching devices studied by alternating current impedance spectroscopy

    NASA Astrophysics Data System (ADS)

    Ouyang, Jianyong

    2013-12-01

    Electron transfer at the contact between an Al electrode and Au nanoparticles of polymer:nanoparticle devices is studied by ac impedance spectroscopy. The devices have a polystyrene layer embedded with Au nanoparticles capped with conjugated 2-naphthalenethiol sandwiched between Al and MoO3/Al electrodes, and they exhibit electrode-sensitive resistive switches. The devices in the pristine or high resistance state have high capacitance. The capacitance decreases after the devices switch to a low resistance state by a voltage scan. The change in the capacitance is attributed to the voltage-induced change on the electronic structure of the contact between the Al electrode and Au nanoparticles.

  2. Electron transfer at the contact between Al electrode and gold nanoparticles of polymer: Nanoparticle resistive switching devices studied by alternating current impedance spectroscopy

    SciTech Connect

    Ouyang, Jianyong

    2013-12-02

    Electron transfer at the contact between an Al electrode and Au nanoparticles of polymer:nanoparticle devices is studied by ac impedance spectroscopy. The devices have a polystyrene layer embedded with Au nanoparticles capped with conjugated 2-naphthalenethiol sandwiched between Al and MoO{sub 3}/Al electrodes, and they exhibit electrode-sensitive resistive switches. The devices in the pristine or high resistance state have high capacitance. The capacitance decreases after the devices switch to a low resistance state by a voltage scan. The change in the capacitance is attributed to the voltage-induced change on the electronic structure of the contact between the Al electrode and Au nanoparticles.

  3. Normally-Off AlGaN/GaN-on-Si Power Switching Device with Embedded Schottky Barrier Diode

    NASA Astrophysics Data System (ADS)

    Park, Bong-Ryeol; Lee, Jae-Gil; Cha, Ho-Young

    2013-03-01

    We have demonstrated a novel AlGaN/GaN power switching device with an embedded Schottky barrier diode. The normally-off transistor mode was implemented with a recessed metal-oxide-semiconductor heterostructure field-effect transistor (MOSHFET) configuration in which a Schottky barrier diode (SBD) was embedded to flow the reverse current. The proposed device is very promising for use in high-efficiency converter and inverter ICs. The prototype device exhibited encouraging characteristics: a turn-on voltage of 2 V for the transistor and a forward turn-on voltage of 0.8 V for the embedded diode. The breakdown voltage for the anode-to-cathode distance of 10 µm was 966 V.

  4. Anomalous nonlinear absorption in epsilon-near-zero materials: optical limiting and all-optical control.

    PubMed

    Vincenti, M A; de Ceglia, D; Scalora, Michael

    2016-08-01

    We investigate nonlinear absorption in films of epsilon-near-zero materials. The combination of large local electric fields at the fundamental frequency and material losses at the harmonic frequencies induce unusual intensity-dependent phenomena. We predict that the second-order nonlinearity of a low-damping, epsilon-near-zero slab produces an optical limiting effect that mimics a two-photon absorption process. Anomalous absorption profiles that depend on low permittivity values at the pump frequency are also predicted for third-order nonlinearities. These findings suggest new opportunities for all-optical light control and novel ways to design reconfigurable and tunable nonlinear devices. PMID:27472631

  5. All-optical mitigation of amplitude and phase-shift drift noise in semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Rocha, Peterson; Gallep, Cristiano M.; Conforti, Evandro

    2015-10-01

    An all-optical scheme aimed at minimizing distortions induced by semiconductor optical amplifiers (SOAs) over modulated optical carriers is presented. The scheme employs an additional SOA properly biased to act as a saturated absorber, and thus counteract the distortions induced by the first amplifying device. The scheme here is demonstrated in silico, for 40 and 100 Gb/s (10 and 25 Gbaud, 16 QAM), with reasonable total gain (>20 dB) for symbol error rate below the forward error correction limit.

  6. All-optical KarhunenLoeve Transform Using Multimode Interference Structures on Silicon Nanowires

    NASA Astrophysics Data System (ADS)

    Le, Trung-Thanh

    2011-12-01

    A variety of unitary transforms have attracted considerable attention for their application in data, image compression and other signal processing applications. Among many transforms, the KarhunenLoeve transform (KLT) is known to be optimal because of its advantages of computational efficiency, residual correlation and rate distortion criterion. In this paper, it is shown that the all-optical KarhunenLoeve transform can be realized using multimode interference (MMI) structures on silicon wire waveguides. The transfer matrix method (TMM) and the beam propagation method (BPM) are used to verify and optimally design the proposed devices.

  7. All-optical biomolecular parallel logic gates with bacteriorhodopsin.

    PubMed

    Sharma, Parag; Roy, Sukhdev

    2004-06-01

    All-optical two input parallel logic gates with bacteriorhodopsin (BR) protein have been designed based on nonlinear intensity-induced excited-state absorption. Amplitude modulation of a continuous wave (CW) probe laser beam transmission at 640 nm corresponding to the peak absorption of O intermediate state through BR, by a modulating CW pump laser beam at 570 nm corresponding to the peak absorption of initial BR state has been analyzed considering all six intermediate states in its photocycle using the rate equation approach. The transmission characteristics have been shown to exhibit a dip, which is sensitive to normalized small-signal absorption coefficient (beta), rate constants of O and N intermediate states and absorption of the O state at 570 nm. There is an optimum value of beta for a given pump intensity range for which maximum modulation can be achieved. It is shown that 100% modulation can be achieved if the initial state of BR does not absorb the probe beam. The results have been used to design low-power all-optical parallel NOT, AND, OR, XNOR, and the universal NAND and NOR logic gates for two cases: 1) only changing the output threshold and 2) considering a common threshold with different beta values. PMID:15382746

  8. Vibration modal analysis using all-optical photorefractive processing

    SciTech Connect

    Hale, T.; Telschow, K.

    1996-12-31

    A new experimental method for vibration modal analysis based on all- optical photorefractive processing is presented. The method utilizes an optical lock-in approach to measure phase variations in light scattered from optically rough, continuously vibrating surfaces. In this four-wave mixing technique, all-optical processing refers to mixing the object beam containing the frequency modulation due to vibration with a single frequency modulated pump beam in the photorefractive medium that processes the modulated signals. This allows for simple detection of the conjugate wavefront image at a CCD. The conjugate intensity is shown to be a function of the first-order ordinary Bessel function and linearly dependent on the vibration displacement induced phase. Furthermore, the results demonstrate the unique capabilities of the optical lock-in vibration detection technique to measure vibration signals with very narrow bandwidth (< 1 Hz) and high displacement sensitivity (sub-Angstrom). This narrow bandwidth detection can be achieved over a wide frequency range from the photorefractive response limit to the reciprocal of the photoinduced carrier recombination time. The technique is applied to determine the modal characteristics of a rigidly clamped circular disc from 10 kHz to 100 kHz.

  9. High-speed all-optical logic inverter based on stimulated Raman scattering in silicon nanocrystal.

    PubMed

    Sen, Mrinal; Das, Mukul K

    2015-11-01

    In this paper, we propose a new device architecture for an all-optical logic inverter (NOT gate), which is cascadable with a similar device. The inverter is based on stimulated Raman scattering in silicon nanocrystal waveguides, which are embedded in a silicon photonic crystal structure. The Raman response function of silicon nanocrystal is evaluated to explore the transfer characteristic of the inverter. A maximum product criterion for the noise margin is taken to analyze the cascadability of the inverter. The time domain response of the inverter, which explores successful inversion operation at 100 Gb/s, is analyzed. Propagation delay of the inverter is on the order of 5 ps, which is less than the delay in most of the electronic logic families as of today. Overall dimension of the device is around 755  μm ×15  μm, which ensures integration compatibility with the matured silicon industry. PMID:26560565

  10. All-optical dynamical Casimir effect in a three-dimensional terahertz photonic band gap

    NASA Astrophysics Data System (ADS)

    Hagenmüller, David

    2016-06-01

    We identify an architecture for the observation of all-optical dynamical Casimir effect in realistic experimental conditions. We suggest that by integrating quantum wells in a three-dimensional (3D) photonic band-gap material made out of large-scale (˜200 -μ m ) germanium logs, it is possible to achieve ultrastrong light-matter coupling at terahertz frequencies for the cyclotron transition of a two-dimensional electron gas interacting with long-lived optical modes, in which vacuum Rabi splitting is comparable to the Landau level spacing. When a short, intense electromagnetic transient of duration ˜250 fs and carrying a peak magnetic field ˜5 T is applied to the structure, the cyclotron transition can be suddenly tuned on resonance with a desired photon mode, switching on the light-matter interaction and leading to a Casimir radiation emitted parallel to the quantum well plane. The radiation spectrum consists of sharp peaks with frequencies coinciding with engineered optical modes within the 3D photonic band gap, and its characteristics are extremely robust to the nonradiative damping which can be large in our system. Furthermore, the absence of continuum with associated low-energy excitations for both electromagnetic and electronic quantum states can prevent the rapid absorption of the photon flux which is likely to occur in other proposals for all-optical dynamical Casimir effect.

  11. New alternative approach to all-optical flip-flop with nonlinear material

    NASA Astrophysics Data System (ADS)

    Giri, Dibyendu; Das, Partha Pratima

    2010-07-01

    Due to its inherent parallelism and tremendous operational speed, optical signal is the most suitable for data processing and digital communication in various fields. Conventional electronic and opto-electronic systems are unable to fulfill this arena, because of their low speed and time delay. In the case of pure electronic flip-flop, when a switch is turned ON, there is notable propagation delay on the order of nanoseconds. For an opto-electronic flip-flop although the propagation delay time is much less than that of an electronic flip-flop (about 10 to 100 times less), there are many disadvantages. Some of these disadvantages are delay of response time due to the use of spatial light modulators, an O/E converter that does not operate at all frequencies or wavelengths, and the unavailability of such materials. An optical input encoding methodology is proposed for the performance of all-optical flip-flop operations possible for two inputs. These operations were conducted in all-optical mode and are parallel in nature. All the operations are treated with proper exploitation of some nonlinear materials.

  12. Maximizing Data Quality using Mode Switching in Mixed-Device Survey Design: Nonresponse Bias and Models of Demographic Behavior

    PubMed Central

    Axinn, William G.; Gatny, Heather H.; Wagner, James

    2016-01-01

    Conducting survey interviews on the internet has become an attractive method for lowering data collection costs and increasing the frequency of interviewing, especially in longitudinal studies. However, the advantages of the web mode for studies with frequent re-interviews can be offset by the serious disadvantage of low response rates and the potential for nonresponse bias to mislead investigators. Important life events, such as changes in employment status, relationship changes, or moving can cause attrition from longitudinal studies, producing the possibility of attrition bias. The potential extent of such bias in longitudinal web surveys is not well understood. We use data from the Relationship Dynamics and Social Life (RDSL) study to examine the potential for a mixed-device approach with active mode switching to reduce attrition bias. The RDSL design allows panel members to switch modes by integrating telephone interviewing into a longitudinal web survey with the objective of collecting weekly reports. We found that in this design allowing panel members to switch modes kept more participants in the study compared to a web only approach. The characteristics of persons who ever switched modes are different than those who did not – including not only demographic characteristics, but also baseline characteristics related to pregnancy and time-varying characteristics that were collected after the baseline interview. This was true in multivariate models that control for multiple of these dimensions simultaneously. We conclude that mode options and mode switching is important for the success of longitudinal web surveys to maximize participation and minimize attrition. PMID:26865882

  13. Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment

    NASA Astrophysics Data System (ADS)

    Chen, Kai-Huang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Liang, Shu-Ping; Young, Tai-Fa; Syu, Yong-En; Sze, Simon M.

    2016-02-01

    Bipolar switching resistance behaviors of the Gd:SiO2 resistive random access memory (RRAM) devices on indium tin oxide electrode by the low-temperature supercritical CO2-treated technology were investigated. For physical and electrical measurement results obtained, the improvement on oxygen qualities, properties of indium tin oxide electrode, and operation current of the Gd:SiO2 RRAM devices were also observed. In addition, the initial metallic filament-forming model analyses and conduction transferred mechanism in switching resistance properties of the RRAM devices were verified and explained. Finally, the electrical reliability and retention properties of the Gd:SiO2 RRAM devices for low-resistance state (LRS)/high-resistance state (HRS) in different switching cycles were also measured for applications in nonvolatile random memory devices.

  14. Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment.

    PubMed

    Chen, Kai-Huang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Liang, Shu-Ping; Young, Tai-Fa; Syu, Yong-En; Sze, Simon M

    2016-12-01

    Bipolar switching resistance behaviors of the Gd:SiO2 resistive random access memory (RRAM) devices on indium tin oxide electrode by the low-temperature supercritical CO2-treated technology were investigated. For physical and electrical measurement results obtained, the improvement on oxygen qualities, properties of indium tin oxide electrode, and operation current of the Gd:SiO2 RRAM devices were also observed. In addition, the initial metallic filament-forming model analyses and conduction transferred mechanism in switching resistance properties of the RRAM devices were verified and explained. Finally, the electrical reliability and retention properties of the Gd:SiO2 RRAM devices for low-resistance state (LRS)/high-resistance state (HRS) in different switching cycles were also measured for applications in nonvolatile random memory devices. PMID:26831690

  15. Multiport InP monolithically integrated all-optical wavelength router.

    PubMed

    Zheng, Xiu; Raz, Oded; Calabretta, Nicola; Zhao, Dan; Lu, Rongguo; Liu, Yong

    2016-08-15

    An indium phosphide-based monolithically integrated wavelength router is demonstrated in this Letter. The wavelength router has four input ports and four output ports, which integrate four wavelength converters and a 4×4 arrayed-waveguide grating router. Each wavelength converter is achieved based on cross-gain modulation and cross-phase modulation effects in a semiconductor optical amplifier. Error-free wavelength switching for a non-return-to-zero 231-1 ps eudorandom binary sequence at 40 Gb/s data rate is performed. Both 1×4 and 3×1 all-optical routing functions of this chip are demonstrated for the first time with power penalties as low as 3.2 dB. PMID:27519116

  16. New approach to fault-tolerant routing in all-optical networks

    NASA Astrophysics Data System (ADS)

    Sengupta, Abhijit; Alluri, Shailesh; Bandyopadhyay, Subir; Jaekel, Arunita

    1999-08-01

    Fault management in WDM routed all-optical networks has mostly been addressed either by automatic protection switching or through loop-back recovery. These schemes are designed for managing single fault occurrence and generalization method to handle multiple faults are not known. Conventional routing schemes are static in nature (where the routers are programmed to realize the lightpaths between the end-nodes) and hence a fault management scheme needs to find a fault-free path between end-nodes using the settings of the routers. This paper considers the principle of survival route graphs to construct fault-free paths between end-nodes. As a result, the fault avoiding route between two end-nodes might be a multihop route in which the number of hops are limited to reduce the communication delay. The performance degradations of the network because of fault occurrence are studied through simulations and measured in terms of blocking probability and communication delay.

  17. Realization of all-optical logic gates through three core photonic crystal fiber

    NASA Astrophysics Data System (ADS)

    Uthayakumar, T.; Vasantha Jayakantha Raja, R.; Porsezian, K.

    2013-06-01

    We present the practical design of novel three core photonic crystal fiber (TPCF) for optical switching and logic operations by employing all optical control. To accomplish the proposed aim, we put forth two types of symmetrical TPCF designs, one with cores of planar geometry and the other with equilateral triangular geometry. The dynamics of the individual pulse parameters through the proposed geometries are analyzed numerically using split step Fourier method (SSFM). The steering characteristics of the coupler are demonstrated by the transmission curve. The truth tables expressing Boolean algebra for different logic operations are constructed from the transmission curves of the individual coupler configurations. Out of all configurations, we observe that the chloroform filled triangular core demonstrates all the logic operations namely OR, NOR, AND, NAND, X-OR, X-NOR and NOT with low input power. A figure of merit of logic gates (FOMEL) is also made to compare the performance of all the logic gates.

  18. Automatic Laser Shutdown Implications for All Optical Data Networks

    NASA Astrophysics Data System (ADS)

    Hinton, Kerry; Farrell, Peter; Zalesky, Andrew; Andrew, Lachlan; Zukerman, Moshe

    2006-02-01

    Generalized multiprotocol label switching (GMPLS), optical packet, and burst-switched networks in which the synchronous digital hierarchy/synchronous optical network (SDH/SONET) layer is removed may be rendered nonfunctional because the current standard for triggering Automatic Power Reduction (APR) cannot distinguish between a fiber that has been de-energized and a fiber failure. If this standard is applied, without modification, the likelihood of unnecessary amplifier shutdown in optical networks is significant. These shutdown events may impact large regions of the network and render optical links inoperable. To avoid unnecessary amplifier shutdown, amendments to the current operation of APR are suggested.

  19. Nanoelectromechanical contact switches

    NASA Astrophysics Data System (ADS)

    Loh, Owen Y.; Espinosa, Horacio D.

    2012-05-01

    Nanoelectromechanical (NEM) switches are similar to conventional semiconductor switches in that they can be used as relays, transistors, logic devices and sensors. However, the operating principles of NEM switches and semiconductor switches are fundamentally different. These differences give NEM switches an advantage over semiconductor switches in some applications -- for example, NEM switches perform much better in extreme environments -- but semiconductor switches benefit from a much superior manufacturing infrastructure. Here we review the potential of NEM-switch technologies to complement or selectively replace conventional complementary metal-oxide semiconductor technology, and identify the challenges involved in the large-scale manufacture of a representative set of NEM-based devices.

  20. A sharp-switching device with free surface and buried gates based on band modulation and feedback mechanisms

    NASA Astrophysics Data System (ADS)

    Solaro, Y.; Fonteneau, P.; Legrand, C. A.; Fenouillet-Beranger, C.; Ferrari, P.; Cristoloveanu, S.

    2016-02-01

    We propose and demonstrate experimentally a band-modulation device with extremely sharp switching capability. The Z3-FET (Zero gate, Zero swing and Zero impact ionization) has no top gate, is processed with FDSOI CMOS technology, and makes use of two adjacent buried ground planes acting as back gates. The buried gates emulate respectively N+ and P+ regions in the undoped body, forming a virtual thyristor-like NPNP structure with feedback operation. Vertical output IA-VA and transfer IA-VG characteristics over more than 8 decades of current are measured with relatively low gate and drain bias (<3 V).

  1. Graphene based All-Optical Spatial Terahertz Modulator

    PubMed Central

    Wen, Qi-Ye; Tian, Wei; Mao, Qi; Chen, Zhi; Liu, Wei-Wei; Yang, Qing-Hui; Sanderson, Matthew; Zhang, Huai-Wu

    2014-01-01

    We demonstrate an all-optical terahertz modulator based on single-layer graphene on germanium (GOG), which can be driven by a 1.55 μm CW laser with a low-level photodoping power. Both the static and dynamic THz transmission modulation experiments were carried out. A spectrally wide-band modulation of the THz transmission is obtained in a frequency range from 0.25 to 1 THz, and a modulation depth of 94% can be achieved if proper pump power is applied. The modulation speed of the modulator was measured to be ~200 KHz using a 340 GHz carrier. A theoretical model is proposed for the modulator and the calculation results indicate that the enhanced THz modulation is mainly due to the third order nonlinear effect in the optical conductivity of the graphene monolayer. PMID:25491194

  2. All-optical generation of surface plasmons in graphene

    NASA Astrophysics Data System (ADS)

    Constant, T. J.; Hornett, S. M.; Chang, D. E.; Hendry, E.

    2016-02-01

    Surface plasmons in graphene offer a compelling route to many useful photonic technologies. As a plasmonic material, graphene offers several intriguing properties, such as excellent electro-optic tunability, crystalline stability, large optical nonlinearities and extremely high electromagnetic field concentration. As such, recent demonstrations of surface plasmon excitation in graphene using near-field scattering of infrared light have received intense interest. Here we present an all-optical plasmon coupling scheme which takes advantage of the intrinsic nonlinear optical response of graphene. Free-space, visible light pulses are used to generate surface plasmons in a planar graphene sheet using difference frequency wave mixing to match both the wavevector and energy of the surface wave. By carefully controlling the phase matching conditions, we show that one can excite surface plasmons with a defined wavevector and direction across a large frequency range, with an estimated photon efficiency in our experiments approaching 10-5.

  3. All-optical optoacoustic microscope based on wideband pulse interferometry.

    PubMed

    Wissmeyer, Georg; Soliman, Dominik; Shnaiderman, Rami; Rosenthal, Amir; Ntziachristos, Vasilis

    2016-05-01

    Optical and optoacoustic (photoacoustic) microscopy have been recently joined in hybrid implementations that resolve extended tissue contrast compared to each modality alone. Nevertheless, the application of the hybrid technique is limited by the requirement to combine an optical objective with ultrasound detection collecting signal from the same micro-volume. We present an all-optical optoacoustic microscope based on a pi-phase-shifted fiber Bragg grating (π-FBG) with coherence-restored pulsed interferometry (CRPI) used as the interrogation method. The sensor offers an ultra-small footprint and achieved higher sensitivity over piezoelectric transducers of similar size. We characterize the spectral bandwidth of the ultrasound detector and interrogate the imaging performance on phantoms and tissues. We show the first optoacoustic images of biological specimen recorded with π-FBG sensors. We discuss the potential uses of π-FBG sensors based on CRPI. PMID:27128047

  4. Generalized model for all-optical light modulation in bacteriorhodopsin

    NASA Astrophysics Data System (ADS)

    Roy, Sukhdev; Singh, C. P.; Reddy, K. P. J.

    2001-10-01

    We present a generalized model for the photochemical cycle of bacteriorhodopsin (bR) protein molecule. Rate equations have been solved for the detailed light-induced processes in bR for its nine states: B→K↔L↔MI→MII↔N↔O↔P→Q→B. The complete steady-state intensity-induced population densities in various states of the molecule have been computed to obtain a general, exact, and analytical expression for the nonlinear absorption coefficient for multiple modulation pump laser beams. All-optical light modulation of different probe laser beam transmissions by intensity induced population changes due to one and two modulation laser beams has been analyzed. The proposed model has been shown to accurately model experimental results.

  5. All-Optical Implementation of the Ant Colony Optimization Algorithm

    NASA Astrophysics Data System (ADS)

    Hu, Wenchao; Wu, Kan; Shum, Perry Ping; Zheludev, Nikolay I.; Soci, Cesare

    2016-05-01

    We report all-optical implementation of the optimization algorithm for the famous “ant colony” problem. Ant colonies progressively optimize pathway to food discovered by one of the ants through identifying the discovered route with volatile chemicals (pheromones) secreted on the way back from the food deposit. Mathematically this is an important example of graph optimization problem with dynamically changing parameters. Using an optical network with nonlinear waveguides to represent the graph and a feedback loop, we experimentally show that photons traveling through the network behave like ants that dynamically modify the environment to find the shortest pathway to any chosen point in the graph. This proof-of-principle demonstration illustrates how transient nonlinearity in the optical system can be exploited to tackle complex optimization problems directly, on the hardware level, which may be used for self-routing of optical signals in transparent communication networks and energy flow in photonic systems.

  6. All-Optical Implementation of the Ant Colony Optimization Algorithm.

    PubMed

    Hu, Wenchao; Wu, Kan; Shum, Perry Ping; Zheludev, Nikolay I; Soci, Cesare

    2016-01-01

    We report all-optical implementation of the optimization algorithm for the famous "ant colony" problem. Ant colonies progressively optimize pathway to food discovered by one of the ants through identifying the discovered route with volatile chemicals (pheromones) secreted on the way back from the food deposit. Mathematically this is an important example of graph optimization problem with dynamically changing parameters. Using an optical network with nonlinear waveguides to represent the graph and a feedback loop, we experimentally show that photons traveling through the network behave like ants that dynamically modify the environment to find the shortest pathway to any chosen point in the graph. This proof-of-principle demonstration illustrates how transient nonlinearity in the optical system can be exploited to tackle complex optimization problems directly, on the hardware level, which may be used for self-routing of optical signals in transparent communication networks and energy flow in photonic systems. PMID:27222098

  7. All-Optical Implementation of the Ant Colony Optimization Algorithm

    PubMed Central

    Hu, Wenchao; Wu, Kan; Shum, Perry Ping; Zheludev, Nikolay I.; Soci, Cesare

    2016-01-01

    We report all-optical implementation of the optimization algorithm for the famous “ant colony” problem. Ant colonies progressively optimize pathway to food discovered by one of the ants through identifying the discovered route with volatile chemicals (pheromones) secreted on the way back from the food deposit. Mathematically this is an important example of graph optimization problem with dynamically changing parameters. Using an optical network with nonlinear waveguides to represent the graph and a feedback loop, we experimentally show that photons traveling through the network behave like ants that dynamically modify the environment to find the shortest pathway to any chosen point in the graph. This proof-of-principle demonstration illustrates how transient nonlinearity in the optical system can be exploited to tackle complex optimization problems directly, on the hardware level, which may be used for self-routing of optical signals in transparent communication networks and energy flow in photonic systems. PMID:27222098

  8. Production and all-optical deceleration of molecular beams

    NASA Astrophysics Data System (ADS)

    Chen, Gary; Jayich, Andrew; Long, Xueping; Ransford, Anthony; Campbell, Wesley

    2015-05-01

    Ultracold molecules open up new opportunities in many areas of study, including many-body physics, quantum chemistry, quantum information, and precision measurements. Current methods cannot easily address the spontaneous decay of molecules into dark states without an amalgam of repump lasers. We present an alternative method to produce cold molecules. A cryogenic buffer gas beam (CBGB) is used to create an intense, slow, cold source of molecules. By using a CBGB for the production, we can quench vibrational modes that cannot be addressed with optical methods. This is then followed by an all-optical scheme using a single ultra-fast laser to decelerate the molecules and a continuous wave laser to cool the species. We have started experiments with strontium monohydride (SrH), but the proposed method should be applicable to a wide range of molecular species.

  9. All-optical phase-preserving multilevel amplitude regeneration.

    PubMed

    Roethlingshoefer, Tobias; Richter, Thomas; Schubert, Colja; Onishchukov, Georgy; Schmauss, Bernhard; Leuchs, Gerd

    2014-11-01

    The possibility of all-optical phase-preserving amplitude regeneration for star-8QAM is demonstrated using a modified nonlinear optical loop mirror. Experiments show a reduction in amplitude noise on both amplitude levels simultaneously, considering two different types of signal distortions: deterministic low-frequency amplitude modulation and broadband amplitude noise. Furthermore, using this amplitude regeneration, the robustness against nonlinear phase noise from fiber nonlinearity in a transmission line is increased. The scheme suppresses the conversion of amplitude noise to nonlinear phase noise. This is shown for simultaneous amplitude regeneration of the two amplitude states as well as for amplitude regeneration of the high-power states only. If the transmission is limited by nonlinear phase noise, single-level operation at the more critical higher-power state will benefit because of the wider plateau region. Numerical simulations confirm the experimental results. PMID:25401858

  10. Ultrafast and bias-free all-optical wavelength conversion using III-V-on-silicon technology.

    PubMed

    Kumar, Rajesh; Spuesens, Thijs; Mechet, Pauline; Kumar, Pragati; Raz, Oded; Olivier, Nicolas; Fedeli, Jean-Marc; Roelkens, Gunther; Baets, Roel; Van Thourhout, Dries; Morthier, Geert

    2011-07-01

    Using a 7.5 μm diameter disk fabricated with III-V-on-silicon fabrication technology, we demonstrate bias-free all-optical wavelength conversion for non-return-to-zero on-off keyed pseudorandom bit sequence (PRBS) data at the speed of 10 Gbits/s with an extinction ratio of more than 12 dB. The working principle of such a wavelength converter is based on free-carrier-induced refractive index modulation in a pump-probe configuration. We believe it to be the first bias-free on-chip demonstration of all-optical wavelength conversion using PRBS data. All-optical gating measurements in the pump-probe configuration with the same device have revealed that it is possible to achieve wavelength conversion beyond 20 Gbits/s. PMID:21725441

  11. Experimental and theoretical investigation of semiconductor optical amplifier (SOA)-based all-optical wavelength converters

    NASA Astrophysics Data System (ADS)

    Dailey, James M.

    Use of fiber-optical networks has increased along with the growing demand for higher data throughputs. As data bandwidths increase, physical switching technologies must also scale accordingly. Optical-electrical-optical (OEO) switching technologies are widely utilized, where incoming optical signals are converted into and processed as electrical signals before conversion back into the optical domain. However, issues such as speed, cost, and power consumption have driven interest in the development of all-optical techniques, where data remains in the optical domain while being processed. Semiconductor optical amplifiers (SOAs) have shown great promise for realizing all-optical technologies. Our work begins with the experimental characterization of SOAs, and we discuss the use of a time-resolved spectroscopy technique. We present a detailed analysis clarifying measurement requirements, though we conclude that this simple technique provides insufficient resolution for characterizing high-speed optical systems. We discuss the measurement theory for spectrograms, which provide high signal-to-noise ratios, excellent temporal resolution, and are sensitive to phase dynamics. We apply the spectrogram measurement to the characterization of an SOA. We develop a system of rate equations for modeling SOA dynamics, beginning with a detailed density matrix analysis providing expressions for gain and chirp without invoking the linewidth-enhancement factor. In accordance with the measurement results, we include a carrier temperature rate calculation in order to capture ultrafast dynamics. The traveling wave partial differential equations are solved so that both forward and reverse propagating signals are accurately modeled, and the results show good agreement with the spectrogram measurement. We identify the free-carrier plasma and the asymmetrical broadening terms in the real and imaginary parts of the refractive index as driving factors in the relatively larger ultrafast response

  12. A new asymmetric directional microphone algorithm with automatic mode-switching ability for binaural hearing support devices.

    PubMed

    Kim, Jinryoul; Nam, Kyoung Won; Yook, Sunhyun; Jang, Dong Pyo; Kim, In Young; Hong, Sung Hwa

    2015-06-01

    For hearing support devices, it is important to minimize the negative effect of ambient noises for speech recognition but also, at the same time, supply natural ambient sounds to the hearing-impaired person. However, conventional fixed bilateral asymmetric directional microphone (DM) algorithms cannot perform in such a way when the DM-mode device and a dominant noise (DN) source are placed on the same lateral hemisphere. In this study, a new binaural asymmetric DM algorithm that can overcome the defects of conventional algorithms is proposed. The proposed algorithm can estimate the position of a specific DN in the 90°-270° range and switch directional- and omnidirectional-mode devices automatically if the DM-mode device and the DN are placed in opposite lateral hemispheres. Computer simulation and KEMAR mannequin recording tests demonstrated that the performance of the conventional algorithm deteriorated when the DM-mode device and the DN were placed in the opposite hemisphere; in contrast, the performance of the proposed algorithm was consistently maintained regardless of directional variations in the DN. Based on these experimental results, the proposed algorithm may be able to improve speech quality and intelligibility for hearing-impaired persons who have similar degrees of hearing impairment in both ears. PMID:25597956

  13. Investigation of the ferroelectric switching behavior of P(VDF-TrFE)-PMMA blended films for synaptic device applications

    NASA Astrophysics Data System (ADS)

    Kim, E. J.; Kim, K. A.; Yoon, S. M.

    2016-02-01

    Synaptic plasticity can be mimicked by electronic synaptic devices. By using ferroelectric thin films as gate insulator for thin-film transistors (TFT), channel conductance can be defined as the synaptic plasticity, and gradually modulated by the variations in amounts of aligned ferroelectric dipoles. Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)]-poly(methyl methacrylate) (PMMA) blended films are chosen and their switching kinetics are investigated by using the Kolmogorov-Avrami-Ishibashi model. The switching time for ferroelectric polarization is sensitively influenced by the amplitude of applied electric field and volumetric ratio of ferroelectric beta-phases in the P(VDF-TrFE)-PMMA films. The switching time of the P(VDF-TrFE) increases with decreasing the pulse amplitude and/or the ratio of ferroelectric beta-phases by incorporation of PMMA. The activation electric field is also found to increase as the increase in blended amount of PMMA. Synapse TFTs are fabricated using the P(VDF-TrFE)-PMMA as gate insulator and In-Ga-Zn-O active channels. The drain currents of the synapse TFTs gradually increased when the voltage pulse signals with given duration are repeatedly applied. This suggests that the synaptic weights can be modulated by the number of external pulse signals, and that the proposed synapse TFT can be applied for mimicking the operations of bio-synapses.

  14. Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnO(x)-based resistive random access memory devices.

    PubMed

    Park, Sung Pyo; Yoon, Doo Hyun; Tak, Young Jun; Lee, Heesoo; Kim, Hyun Jae

    2015-06-01

    Here, we propose an effective method for improving the resistive switching characteristics of solution-processed gallium-doped zinc oxide (GaZnO(x)) resistive random access memory (RRAM) devices using hydrogen peroxide. Our results imply that solution processed GaZnO(x) RRAM devices could be one of the candidates for the development of low cost RRAM. PMID:25947353

  15. All-optical switching using second-order nonlinearities in KTP

    NASA Astrophysics Data System (ADS)

    Wang, Z.; Hagan, David J.; Sheik-Bahae, Mansoor; DeSalvo, Richard J.; Stegeman, George I.; Van Stryland, Eric W.; Assanto, Gaetano

    1994-07-01

    Photoelectron spectroscopy of coordinatively unsaturated organometallic anions can provide a means to probe the ground and low lying excited states of the corresponding neutral radicals. We report results for the early 3D transition metal monocarbonyls VCO and CrCO, and for the late metal complexes FeCO, CoCO and NiCO. Each spectrum displays a transition to the ground state of the neutral complex, and to an excited state whose spin multiplicity differs by two from that of the ground state. For a given complex, these states share nominally the same electron configuration but differ in the spin coupling of the metal 4s electron. There is a reversal in the state ordering as one proceeds across the transition series, from a high spin ground state for VCO (6(Sigma) +) and CrCO (7(Sigma) +) to a low spin ground state for FeCO (3(Sigma) -), CoCO (2(Delta) ) and NiCO (+1)(Sigma) )+). The measured state splittings and vibrational frequencies provide insight into the factors that determine the ordering and bonding properties of these states. Recent results for the linear H-M-CO isomers of Fe and Co are also reported.

  16. Studies in optical parallel processing. [All optical and electro-optic approaches

    NASA Technical Reports Server (NTRS)

    Lee, S. H.

    1978-01-01

    Threshold and A/D devices for converting a gray scale image into a binary one were investigated for all-optical and opto-electronic approaches to parallel processing. Integrated optical logic circuits (IOC) and optical parallel logic devices (OPA) were studied as an approach to processing optical binary signals. In the IOC logic scheme, a single row of an optical image is coupled into the IOC substrate at a time through an array of optical fibers. Parallel processing is carried out out, on each image element of these rows, in the IOC substrate and the resulting output exits via a second array of optical fibers. The OPAL system for parallel processing which uses a Fabry-Perot interferometer for image thresholding and analog-to-digital conversion, achieves a higher degree of parallel processing than is possible with IOC.

  17. Effects of drying temperature and ethanol concentration on bipolar switching characteristics of natural Aloe vera-based memory devices.

    PubMed

    Lim, Zhe Xi; Cheong, Kuan Yew

    2015-10-28

    Extracted, formulated, and processed natural Aloe vera has been used as an active layer for memory applications. The functional memory device is realized by a bottom-up structure of ITO/Aloe vera/Al in which the Aloe vera is spin-coated after mixing with different concentrations of ethanol (0-80 wt%) and subsequently dried at different temperatures (50-120 °C). From the current density-voltage measurements, the device can exhibit a reproducible bipolar switching characteristic with pure Aloe vera dried at 50 °C. It is proposed that charges are transported across the Aloe vera layer via space-charge-limited conduction (SCLC), and clusters of interstitial space formed by the functional groups of acemannans and de-esterified pectins in the dried Aloe vera contribute to the memory effect. The formation of charge traps in the Aloe vera layer is dependent on the drying temperature. The drying temperature of a memory-switching Aloe vera layer can be extended to 120 °C with the addition of appropriate amounts of ethanol. The concept of using natural Aloe vera as an active material for memory applications has been demonstrated, and the read memory window, ON/OFF ratio, and retention time are approximately 5.0 V, 10(3), and >10(4) s, respectively. PMID:26400096

  18. Ferroelectricity in Li-Doped ZnO:X Thin Films and their Application in Optical Switching Devices

    NASA Astrophysics Data System (ADS)

    Nagata, Takahiro; Shimura, Tamaki; Nakano, Yoshiyuki; Ashida, Atsushi; Fujimura, Norifumi; Ito, Taichiro

    2001-09-01

    We have proposed the application of ZnO:X (X=Li,Ni,Al etc.) films in monolithic optical integrated circuits (OICs). 1 To realize the optical switching device, dielectric properties of ZnO:Li deposited on SiO2/p-Si were evaluated in detail. From the results of the frequency dependence of the dielectric permittivity and the loss, and the temperature dependence of ac conductivity at various frequencies, the existence of mobile Li ion was confirmed. The pulsed C-V measurements 2 revealed that not only the mobile Li ion but also the ferroelectricity of ZnO:Li contributed to the hysteresis in the normal C-V behavior. To determine the processes assumed to occur in the switching device structure, a prototype of the waveguide structure was fabricated. Although the relationship between the refractive indices of the core and clad layers satisfied the required condition for propagation, several processes such as interdiffusion of doped ions, band alignment and/or rearrangement of space charge when applying the bias voltage were also revealed.

  19. Electrical Breakdown and Lock-On in Photoconductive Semiconductor Switch (PCSS) Devices

    NASA Astrophysics Data System (ADS)

    Hjalmarson, Harold; Kambour, Kenneth; Zutavern, Fred; Myles, Charley

    2008-03-01

    Optically-triggered, high-power photoconductive semiconductor switches (PCSS's) using semi-insulating GaAs are being developed at Sandia Labs. These switches carry current in high carrier-density filaments. The properties of these filaments can be explained by redistribution of carrier energy caused by carrier-carrier scattering within the filament. This process enhances the impact ionization rate thus allowing these filaments to be sustained by relatively low fields, a process called lock-on. For GaAs, the sustaining field is approximately 4.5 kV/cm. For this talk, the physics mechanisms for lock-on and high-field electrical breakdown are described. Also, a continuum implementation of these physics mechanisms is used to compute the properties of these filaments. These continuum calculations are based on previous calculations in which the filament properties are computed using a Monte Carlo method to solve the steady-state Boltzmann equation.

  20. Polarized UV cured reactive mesogens for fast switching and low voltage driving liquid crystal device.

    PubMed

    Chung, Hyung-Koo; Lee, Won-Kyu; Park, Hong-Gyu; Lee, Hak Moo; Jeong, Hae-Chang; Cho, Min-Cha; Seo, Dae-Shik

    2014-09-01

    Uniaxial alignment of liquid crystals (LCs) is prerequisite for a vast number of LC applications. To accomplish stable and uniform LC orientation, an alignment process to orient the LCs is required. Herein, we demonstrate a simple strategy for fabricating novel LC alignment layers that ensures well aligned LC, superior switching without any capacitance hysteresis, low transmittance loss, and high thermal stability with sufficient anchoring action. Thin films of reactive mesogens (RMs) were transferred onto conventional homeotropic polyimides from a UV-cured RM stamp via contact printing. LC displays using defect free RM/PI polymeric stacks exhibited superior electro-optic (EO) properties to those containing rubbed PI layers. This approach allows for the fabrication of various-mode LC displays such as twisted nematic (TN), in-plane switching (IPS), and optically compensated bend (OCB) mode LCDs by changing the combinations of RMs, base PIs and LCs. PMID:25321534

  1. Ultra-Lightweight Resistive Switching Memory Devices Based on Silk Fibroin.

    PubMed

    Wang, Hong; Zhu, Bowen; Wang, Hua; Ma, Xiaohua; Hao, Yue; Chen, Xiaodong

    2016-07-01

    Ultra-lightweight resistive switching memory based on protein has been demonstrated. The memory foil is 0.4 mg cm(-2) , which is 320-fold lighter than silicon substrate, 20-fold lighter than office paper and can be sustained by a human hair. Additionally, high resistance OFF/ON ratio of 10(5) , retention time of 10(4) s, and excellent flexibility (bending radius of 800 μm) have been achieved. PMID:27315137

  2. Noise tolerance in wavelength-selective switching of optical differential quadrature-phase-shift-keying pulse train by collinear acousto-optic devices.

    PubMed

    Goto, Nobuo; Miyazaki, Yasumitsu

    2014-06-01

    Optical switching of high-bit-rate quadrature-phase-shift-keying (QPSK) pulse trains using collinear acousto-optic (AO) devices is theoretically discussed. Since the collinear AO devices have wavelength selectivity, the switched optical pulse trains suffer from distortion when the bandwidth of the pulse train is comparable to the pass bandwidth of the AO device. As the AO device, a sidelobe-suppressed device with a tapered surface-acoustic-wave (SAW) waveguide and a Butterworth-type filter device with a lossy SAW directional coupler are considered. Phase distortion of optical pulse trains at 40 to 100  Gsymbols/s in QPSK format is numerically analyzed. Bit-error-rate performance with additive Gaussian noise is also evaluated by the Monte Carlo method. PMID:24922411

  3. All-optical wavelength conversion for mode division multiplexed superchannels.

    PubMed

    Gong, Jiaxin; Xu, Jing; Luo, Ming; Li, Xiang; Qiu, Ying; Yang, Qi; Zhang, Xinliang; Yu, Shaohua

    2016-04-18

    We report in this work the first all-optical wavelength conversion (AOWC) of a mode division multiplexed (MDM) superchannel consisting of 2N modes by dividing the superchannel into N single-mode (SM) tributaries, wavelength converting N SM signals using well developed SM-AOWC techniques, and finally combining the N SM tributaries back to an MDM superchannel at the converted wavelength, inspired by the idea of using SM filtering techniques to filter multimode signals in astronomy. The conversions between multimode and SM are realized by 3D laser-writing photonic lanterns and SM-AOWCs are realized based on polarization insensitive four wave mixing (FWM) configuration in N semiconductor optical amplifiers (SOAs). As a proof of concept demonstration, the conversion of a 6-mode MDM superchannel with each mode modulated with orthogonal frequency division multiplexed (OFDM) quadrature phase-shift keying (QPSK)/16 quadrature amplitude modulation (QAM) signals is demonstrated in this work, indicating that the scheme is transparent to data format, polarization and compatible with multi-carrier signals. Data integrity of the converted superchannel has been verified by using coherent detection and digital signal processing (DSP). Bit error rates (BERs) below the forward error correction (FEC) hard limit (3.8 × 10-3) have been obtained for QPSK modulation at a net bitrate of 104.2 Gbit/s and BERs below the soft decision FEC threshold (1.98 × 10-2) have been achieved for 16-QAM format, giving a total aggregate bit rate of 185.8 Gbit/s when taking 20% coding overhead into account. Add and drop functionalities that usually come along with wavelength conversion in flexible network nodes have also been demonstrated. The working conditions of the SOAs, especially the pump and signal power levels, are critical for the quality of the converted signal and have been thoroughly discussed. The impact of imbalanced FWM conversion efficiency among different SM

  4. All-thin-film PZT/FeGa Multiferroic Cantilevers and Their Applications in Switching Devices and Parametric Amplification

    NASA Astrophysics Data System (ADS)

    Wang, Yi; Onuta, Tiberiu-Dan; Long, Chris; Lofland, Samuel; Takeuchi, Ichiro

    2014-03-01

    We are investigating the characteristics of microfabricated PZT/FeGa multiferroic cantilevers. The cantilevers can be driven by AC or DC magnetic and electric field, and the device response can be read off as a piezo-induced voltage. We can use the multiple input parameters to operate the devices in a variety of manners for different applications. They include electromagnetic energy harvesting, pulse triggered nonlinear memory devices, and parametrically amplified ME sensors. Due to the competition of anisotropy and Zeeman energies, the mechanical resonant frequency of the cantilevers was found to follow a hysteresis behavior with DC bias magnetic field applied in the cantilever easy axis. We can also control and tune the occurrence of nonlinear bifurcation in the frequency spectrum. The resulting hysteresis in the frequency spectrum can be used to make switching devices, where the input can be DC electric and magnetic fields, as well as pulses of AC fields. We have also demonstrated parametric pumping of the response from an AC magnetic field using frequency-doubled AC electric field. The enhanced equivalent ME coefficient is as high as 10 million V/(cm*Oe), when the pumping voltage is very close to a threshold voltage. The quality factor also increases from 2000 to 80000 with pumping.

  5. All-optical nonlinear holographic correlation using bacteriorhodopsin films

    NASA Astrophysics Data System (ADS)

    Thoma, Ralph; Dratz, Michael; Hampp, Norbert

    1995-05-01

    Films made of the halobacterial photochrome bacteriorhodopsin (BR) can be used in a number of holographic real-time applications. Their application as active material in a dual-axis joint- Fourier-transform (DAJFT) real-time correlator was shown recently. The BR films have a strong nonlinear intensity dependence on the light-induced absorption and refractive-index changes. Therefore the holographic diffraction efficiency also shows a nonlinear dependence on the writing intensity. We investigate the effect of this nonlinearity on the result of the correlation process in a bacteriorhodopsin-based DAJFT correlator. Numerical models supporting the experimental observations are presented. It was found that the BR film combines the holographic function for most objects with that of a spatial bandpass filter, whose center frequency is tuned by the writing intensity. This results in smaller peak widths and a suppression of the sidelobes. BR films allow the application of this nonlinear behavior in real time to the all-optical correlation process.

  6. All-optical broadband ultrasonography of single cells

    PubMed Central

    Dehoux, T.; Ghanem, M. Abi; Zouani, O. F.; Rampnoux, J.-M.; Guillet, Y.; Dilhaire, S.; Durrieu, M.-C.; Audoin, B.

    2015-01-01

    Cell mechanics play a key role in several fundamental biological processes, such as migration, proliferation, differentiation and tissue morphogenesis. In addition, many diseased conditions of the cell are correlated with altered cell mechanics, as in the case of cancer progression. For this there is much interest in methods that can map mechanical properties with a sub-cell resolution. Here, we demonstrate an inverted pulsed opto-acoustic microscope (iPOM) that operates in the 10 to 100 GHz range. These frequencies allow mapping quantitatively cell structures as thin as 10 nm and resolving the fibrillar details of cells. Using this non-invasive all-optical system, we produce high-resolution images based on mechanical properties as the contrast mechanisms, and we can observe the stiffness and adhesion of single migrating stem cells. The technique should allow transferring the diagnostic and imaging abilities of ultrasonic imaging to the single-cell scale, thus opening new avenues for cell biology and biomaterial sciences. PMID:25731090

  7. All-optical broadband ultrasonography of single cells

    NASA Astrophysics Data System (ADS)

    Dehoux, T.; Ghanem, M. Abi; Zouani, O. F.; Rampnoux, J.-M.; Guillet, Y.; Dilhaire, S.; Durrieu, M.-C.; Audoin, B.

    2015-03-01

    Cell mechanics play a key role in several fundamental biological processes, such as migration, proliferation, differentiation and tissue morphogenesis. In addition, many diseased conditions of the cell are correlated with altered cell mechanics, as in the case of cancer progression. For this there is much interest in methods that can map mechanical properties with a sub-cell resolution. Here, we demonstrate an inverted pulsed opto-acoustic microscope (iPOM) that operates in the 10 to 100 GHz range. These frequencies allow mapping quantitatively cell structures as thin as 10 nm and resolving the fibrillar details of cells. Using this non-invasive all-optical system, we produce high-resolution images based on mechanical properties as the contrast mechanisms, and we can observe the stiffness and adhesion of single migrating stem cells. The technique should allow transferring the diagnostic and imaging abilities of ultrasonic imaging to the single-cell scale, thus opening new avenues for cell biology and biomaterial sciences.

  8. All-optical photoacoustic microscopy using a MEMS scanning mirror

    NASA Astrophysics Data System (ADS)

    Chen, Sung-Liang; Xie, Zhixing; Ling, Tao; Wei, Xunbin; Guo, L. Jay; Wang, Xueding

    2013-03-01

    It has been studied that a potential marker to obtain prognostic information about bladder cancer is tumor neoangiogenesis, which can be quantified by morphometric characteristics such as microvascular density. Photoacoustic microscopy (PAM) can render sensitive three-dimensional (3D) mapping of microvasculature, providing promise to evaluate the neoangiogenesis that is closely related to the diagnosis of bladder cancer. To ensure good image quality, it is desired to acquire bladder PAM images from its inside via the urethra, like conventional cystoscope. Previously, we demonstrated all-optical PAM systems using polymer microring resonators to detect photoacoustic signals and galvanometer mirrors for laser scanning. In this work, we build a miniature PAM system using a microelectromechanical systems (MEMS) scanning mirror, demonstrating a prototype of an endoscopic PAM head capable of high imaging quality of the bladder. The system has high resolutions of 17.5 μm in lateral direction and 19 μm in the axial direction at a distance of 5.4 mm. Images of printed grids and the 3D structure of microvasculature in animal bladders ex vivo by the system are demonstrated.

  9. Quasi-all-optical network extension for submarine cabled observatories

    NASA Astrophysics Data System (ADS)

    Audo, Frederic; Guegan, Mikael; Quintard, Véronique; Perennou, Andre; Le Bihan, Jean; Auffret, Yves

    2011-04-01

    Submarine cabled networks are designed to collect valuable data in geophysics, geochemistry, biology, or oceanography. Unfortunately, the development of such a network is expensive and needs complex subsea infrastructures. Once in place, a cabled network cannot be easily relocated. The current cost of cables and their installation are one of the major obstacles to these networks deployment. On the one hand, these cables are necessary to provide power supply and communication data, and on the other hand they drastically reduce the possibilities to extend the cabled observatory network in order to reach a closed area of significant interest. This is why, to address this issue, we propose a quasi-all-optical architecture to easily extend multidisciplinary cabled networks or to create a dedicated submarine hydrophone or seismometer network. This solution consists of using only a single fiber optic to transmit both the energy, required to supply the instrument, and the data, exchanged between the shore station or equivalent. In this paper, we present our proposed architecture, and we discuss its feasibility thanks to experimental results.

  10. All-optical regulation of gene expression in targeted cells

    NASA Astrophysics Data System (ADS)

    Wang, Yisen; He, Hao; Li, Shiyang; Liu, Dayong; Lan, Bei; Hu, Minglie; Cao, Youjia; Wang, Chingyue

    2014-06-01

    Controllable gene expression is always a challenge and of great significance to biomedical research and clinical applications. Recently, various approaches based on extra-engineered light-sensitive proteins have been developed to provide optogenetic actuators for gene expression. Complicated biomedical techniques including exogenous genes engineering, transfection, and material delivery are needed. Here we present an all-optical method to regulate gene expression in targeted cells. Intrinsic or exogenous genes can be activated by a Ca2+-sensitive transcription factor nuclear factor of activated T cells (NFAT) driven by a short flash of femtosecond-laser irradiation. When applied to mesenchymal stem cells, expression of a differentiation regulator Osterix can be activated by this method to potentially induce differentiation of them. A laser-induced ``Ca2+-comb'' (LiCCo) by multi-time laser exposure is further developed to enhance gene expression efficiency. This noninvasive method hence provides an encouraging advance of gene expression regulation, with promising potential of applying in cell biology and stem-cell science.

  11. Resistive Switching Behavior in Organic-Inorganic Hybrid CH3 NH3 PbI3-x Clx Perovskite for Resistive Random Access Memory Devices.

    PubMed

    Yoo, Eun Ji; Lyu, Miaoqiang; Yun, Jung-Ho; Kang, Chi Jung; Choi, Young Jin; Wang, Lianzhou

    2015-10-28

    The CH3 NH3 PbI3- x Clx organic-inorganic hybrid perovskite material demonstrates remarkable resistive switching behavior, which can be applicable in resistive random access memory devices. The simply designed Au/CH3 NH3 PbI3- x Clx /FTO structure is fabricated by a low-temperature, solution-processable method, which exhibits remarkable bipolar resistive switching and nonvolatile properties. PMID:26331363

  12. On the impact of fiber-delay-lines (FDL) in an all-optical network (AON) bottleneck without wavelength conversion

    NASA Astrophysics Data System (ADS)

    Argibay-Losada, Pablo Jesus; Sahin, Gokhan

    2014-08-01

    Random access memories (RAM) are fundamental in conventional electronic switches and routers to manage short-term congestion and to decrease data loss probabilities. Switches in all-optical networks (AONs), however, do not have access to optical RAM, and therefore are prone to much higher loss levels than their electronic counterparts. Fiber-delay-lines (FDLs), able to delay an optical data packet a fixed amount of time, have been proposed in the literature as a means to alleviate those high loss levels. However, they are extremely bulky to manage, so their usage introduces a trade-off between practicality and performance in the design and operation of the AON. In this paper we study the influence that FDLs have in the performance of flows crossing an all-optical switch that acts as their bottleneck. We show how extremely low numbers of FDLs (e.g., 1 or 2) can help in reducing losses by several orders of magnitude in several illustrative scenarios with high aggregation levels. Our results therefore suggest that FDLs can be a practical means of dealing with congestion in AONs in the absence of optical RAM buffers or of suitable data interchange protocols specifically designed for AONs.

  13. Optical Circuit Switched Protocol

    NASA Technical Reports Server (NTRS)

    Monacos, Steve P. (Inventor)

    2000-01-01

    The present invention is a system and method embodied in an optical circuit switched protocol for the transmission of data through a network. The optical circuit switched protocol is an all-optical circuit switched network and includes novel optical switching nodes for transmitting optical data packets within a network. Each optical switching node comprises a detector for receiving the header, header detection logic for translating the header into routing information and eliminating the header, and a controller for receiving the routing information and configuring an all optical path within the node. The all optical path located within the node is solely an optical path without having electronic storage of the data and without having optical delay of the data. Since electronic storage of the header is not necessary and the initial header is eliminated by the first detector of the first switching node. multiple identical headers are sent throughout the network so that subsequent switching nodes can receive and read the header for setting up an optical data path.

  14. All-optical coherent population trapping with defect spin ensembles in silicon carbide

    PubMed Central

    Zwier, Olger V.; O’Shea, Danny; Onur, Alexander R.; van der Wal, Caspar H.

    2015-01-01

    Divacancy defects in silicon carbide have long-lived electronic spin states and sharp optical transitions. Because of the various polytypes of SiC, hundreds of unique divacancies exist, many with spin properties comparable to the nitrogen-vacancy center in diamond. If ensembles of such spins can be all-optically manipulated, they make compelling candidate systems for quantum-enhanced memory, communication, and sensing applications. We report here direct all-optical addressing of basal plane-oriented divacancy spins in 4H-SiC. By means of magneto-spectroscopy, we fully identify the spin triplet structure of both the ground and the excited state, and use this for tuning of transition dipole moments between particular spin levels. We also identify a role for relaxation via intersystem crossing. Building on these results, we demonstrate coherent population trapping -a key effect for quantum state transfer between spins and photons- for divacancy sub-ensembles along particular crystal axes. These results, combined with the flexibility of SiC polytypes and device processing, put SiC at the forefront of quantum information science in the solid state. PMID:26047132

  15. High Speed All Optical Nyquist Signal Generation and Full-band Coherent Detection

    PubMed Central

    Zhang, Junwen; Yu, Jianjun; Fang, Yuan; Chi, Nan

    2014-01-01

    Spectrum efficient data transmission is of key interest for high capacity optical communication systems considering the limited available bandwidth. Transmission of the high speed signal with higher-order modulation formats within the Nyquist bandwidth using coherent detection brings attractive performance advantages. However, high speed Nyquist signal generation with high order modulation formats is challenging. Electrical Nyquist pulse generation is restricted by the limited sampling rate and processor capacities of digital-to-analog convertor devices, while the optical Nyquist signals can provide a much higher symbol rate using time domain multiplexing method. However, most optical Nyquist signals are based on direct detection with simple modulation formats. Here we report the first experimental demonstration of high speed all optical Nyquist signal generation based on Sinc-shaped pulse generation and time-division multiplexing with high level modulation format and full-band coherent detection. Our experiments demonstrate a highly flexible and compatible all optical high speed Nyquist signal generation and detection scheme for future fiber communication systems. PMID:25142269

  16. Ultrafast all-optical temporal differentiation in integrated phase-shifted Bragg gratings

    NASA Astrophysics Data System (ADS)

    Rutkowska, Katarzyna A.; Duchesne, David; Strain, Michael J.; Azana, José; Morandotti, Roberto; Sorel, Marc

    2010-12-01

    All-optical communications and data processing exemplifies an important alternative to overcome the speed and bandwidth limitations imposed by electronics. Specifically, practical implementation of analog operations, including optical temporal differentiation, is fundamental for future ultrafast signal processing and computing networks. In addition, the development of fully integrated systems that allow on-single-chip operations is of significant interest. In this work we report the design, fabrication tolerances and first experimental demonstration of an integrated, ultrafast differentiator based on π-phase-shifted Bragg gratings. By using deeply-sidewall-etched Silicon-on-Insulator (SOI) ridged waveguides, first-order optical differentiation has been achieved on sub-millimeters length scales, reaching THz processing speeds. The proposed device has numerous potential applications, including all-optical, analog solving of differential equations (important for virtual modeling of scientific phenomena)1, data processing and analysis2, as well as for the generation of Hermite-Gaussian waveforms (used for arbitrary optical coding and decoding)3.

  17. All-optical coherent population trapping with defect spin ensembles in silicon carbide.

    PubMed

    Zwier, Olger V; O'Shea, Danny; Onur, Alexander R; van der Wal, Caspar H

    2015-01-01

    Divacancy defects in silicon carbide have long-lived electronic spin states and sharp optical transitions. Because of the various polytypes of SiC, hundreds of unique divacancies exist, many with spin properties comparable to the nitrogen-vacancy center in diamond. If ensembles of such spins can be all-optically manipulated, they make compelling candidate systems for quantum-enhanced memory, communication, and sensing applications. We report here direct all-optical addressing of basal plane-oriented divacancy spins in 4H-SiC. By means of magneto-spectroscopy, we fully identify the spin triplet structure of both the ground and the excited state, and use this for tuning of transition dipole moments between particular spin levels. We also identify a role for relaxation via intersystem crossing. Building on these results, we demonstrate coherent population trapping -a key effect for quantum state transfer between spins and photons- for divacancy sub-ensembles along particular crystal axes. These results, combined with the flexibility of SiC polytypes and device processing, put SiC at the forefront of quantum information science in the solid state. PMID:26047132

  18. Amorphous silicon thin film for all-optical micromodulator

    NASA Astrophysics Data System (ADS)

    Nigro, Maria Arcangela M.; Cantore, Francesca; Della Corte, Francesco Giuseppe; Summonte, Caterina

    2003-04-01

    Photoinduced absorption by VIS radiation in a-Si:H has been studied in-guide, in order to realise a novel all-optical waveguide micromodulator for application at 1.3 and 1.55 μm fiber communication wavelengths. In a-Si:H the photoinduced effects and the NIR absorption both involve dangling bonds states. The density of these states, deep in the gap, can be varied with doping. Therefore three waveguide prototypes have been fabricated by Plasma Enhanced Chemical Vapour Deposition on a silicon wafer. Their structure consist of a a-Si:H/SiO2 stack where the a-Si:H cores have different doping. The upper cladding is air. Optical measures on the core materials and signal transmission analysis in-guide at bit rates up to 200 kBit/s have been carried out. The excitation source of the VIS pump system for in-guide analysis consisted of simple, low cost AlInGaP LED"s controlled by a pulse generator. The pump and probe measures have been performed with different pump wavelengths and by varying the illumination intensity. LED"s with wavelengths of 644, 612, 590 and 571 nm have been alternatively used. For each pump wavelength, the light intensity was varied between 0,15 and 0,85 mW/mm2. The results confirms that the optical modulation of the NIR signal enhances at high doping levels and for longer wavelengths. The modulation speed is probably limited by recombination phenomena.

  19. Phase-coherent all-optical frequency division by three

    SciTech Connect

    Lee, Dong-Hoon; Klein, Marvin E.; Meyn, Jan-Peter; Wallenstein, Richard; Gross, Petra; Boller, Klaus-Jochen

    2003-01-01

    The properties of all-optical phase-coherent frequency division by 3, based on a self-phase-locked continuous-wave (cw) optical parametric oscillator (OPO), are investigated theoretically and experimentally. The frequency to be divided is provided by a diode laser master-oscillator power-amplifier system operated at a wavelength of 812 nm and used as the pump source of the OPO. Optical self-phase-locking of the OPO signal and idler waves is achieved by mutual injection locking of the signal wave and the intracavity frequency-doubled idler wave. The OPO process and the second-harmonic generation of the idler wave are simultaneously phase matched through quasi-phase-matching using two periodically poled sections of different period manufactured within the same LiNbO{sub 3} crystal. An optical self-phase-locking range of up to 1 MHz is experimentally observed. The phase coherence of frequency division by three is measured via the phase stability of an interference pattern formed by the input and output waves of the OPO. The fractional frequency instability of the divider is measured to be smaller than 7.6x10{sup -14} for a measurement time of 10 s (resolution limited). The self-phase-locking characteristics of the cw OPO are theoretically investigated by analytically solving the coupled field equations in the steady-state regime. For the experimental parameters of the OPO, the calculations predict a locking range of 1.3 MHz and a fractional frequency instability of 1.6x10{sup -15}, in good agreement with the experimental results.

  20. Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance

    NASA Astrophysics Data System (ADS)

    Niu, Gang; Calka, Pauline; Auf der Maur, Matthias; Santoni, Francesco; Guha, Subhajit; Fraschke, Mirko; Hamoumou, Philippe; Gautier, Brice; Perez, Eduardo; Walczyk, Christian; Wenger, Christian; di Carlo, Aldo; Alff, Lambert; Schroeder, Thomas

    2016-05-01

    Filament-type HfO2-based RRAM has been considered as one of the most promising candidates for future non-volatile memories. Further improvement of the stability, particularly at the “OFF” state, of such devices is mainly hindered by resistance variation induced by the uncontrolled oxygen vacancies distribution and filament growth in HfO2 films. We report highly stable endurance of TiN/Ti/HfO2/Si-tip RRAM devices using a CMOS compatible nanotip method. Simulations indicate that the nanotip bottom electrode provides a local confinement for the electrical field and ionic current density; thus a nano-confinement for the oxygen vacancy distribution and nano-filament location is created by this approach. Conductive atomic force microscopy measurements confirm that the filaments form only on the nanotip region. Resistance switching by using pulses shows highly stable endurance for both ON and OFF modes, thanks to the geometric confinement of the conductive path and filament only above the nanotip. This nano-engineering approach opens a new pathway to realize forming-free RRAM devices with improved stability and reliability.

  1. Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance

    PubMed Central

    Niu, Gang; Calka, Pauline; Auf der Maur, Matthias; Santoni, Francesco; Guha, Subhajit; Fraschke, Mirko; Hamoumou, Philippe; Gautier, Brice; Perez, Eduardo; Walczyk, Christian; Wenger, Christian; Di Carlo, Aldo; Alff, Lambert; Schroeder, Thomas

    2016-01-01

    Filament-type HfO2-based RRAM has been considered as one of the most promising candidates for future non-volatile memories. Further improvement of the stability, particularly at the “OFF” state, of such devices is mainly hindered by resistance variation induced by the uncontrolled oxygen vacancies distribution and filament growth in HfO2 films. We report highly stable endurance of TiN/Ti/HfO2/Si-tip RRAM devices using a CMOS compatible nanotip method. Simulations indicate that the nanotip bottom electrode provides a local confinement for the electrical field and ionic current density; thus a nano-confinement for the oxygen vacancy distribution and nano-filament location is created by this approach. Conductive atomic force microscopy measurements confirm that the filaments form only on the nanotip region. Resistance switching by using pulses shows highly stable endurance for both ON and OFF modes, thanks to the geometric confinement of the conductive path and filament only above the nanotip. This nano-engineering approach opens a new pathway to realize forming-free RRAM devices with improved stability and reliability. PMID:27181525

  2. Structural Phase Transition Effect on Resistive Switching Behavior of MoS2 -Polyvinylpyrrolidone Nanocomposites Films for Flexible Memory Devices.

    PubMed

    Zhang, Peng; Gao, Cunxu; Xu, Benhua; Qi, Lin; Jiang, Changjun; Gao, Meizhen; Xue, Desheng

    2016-04-01

    The 2H phase and 1T phase coexisting in the same molybdenum disulfide (MoS2 ) nanosheets can influence the electronic properties of the materials. The 1T phase of MoS2 is introduced into the 2H-MoS2 nanosheets by two-step hydrothermal synthetic methods. Two types of nonvolatile memory effects, namely write-once read-many times memory and rewritable memory effect, are observed in the flexible memory devices with the configuration of Al/1T@2H-MoS2 -polyvinylpyrrolidone (PVP)/indium tin oxide (ITO)/polyethylene terephthalate (PET) and Al/2H-MoS2 -PVP/ITO/PET, respectively. It is observed that structural phase transition in MoS2 nanosheets plays an important role on the resistive switching behaviors of the MoS2 -based device. It is hoped that our results can offer a general route for the preparation of various promising nanocomposites based on 2D nanosheets of layered transition metal dichalcogenides for fabricating the high performance and flexible nonvolatile memory devices through regulating the phase structure in the 2D nanosheets. PMID:26938882

  3. Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance.

    PubMed

    Niu, Gang; Calka, Pauline; Auf der Maur, Matthias; Santoni, Francesco; Guha, Subhajit; Fraschke, Mirko; Hamoumou, Philippe; Gautier, Brice; Perez, Eduardo; Walczyk, Christian; Wenger, Christian; Di Carlo, Aldo; Alff, Lambert; Schroeder, Thomas

    2016-01-01

    Filament-type HfO2-based RRAM has been considered as one of the most promising candidates for future non-volatile memories. Further improvement of the stability, particularly at the "OFF" state, of such devices is mainly hindered by resistance variation induced by the uncontrolled oxygen vacancies distribution and filament growth in HfO2 films. We report highly stable endurance of TiN/Ti/HfO2/Si-tip RRAM devices using a CMOS compatible nanotip method. Simulations indicate that the nanotip bottom electrode provides a local confinement for the electrical field and ionic current density; thus a nano-confinement for the oxygen vacancy distribution and nano-filament location is created by this approach. Conductive atomic force microscopy measurements confirm that the filaments form only on the nanotip region. Resistance switching by using pulses shows highly stable endurance for both ON and OFF modes, thanks to the geometric confinement of the conductive path and filament only above the nanotip. This nano-engineering approach opens a new pathway to realize forming-free RRAM devices with improved stability and reliability. PMID:27181525

  4. Fast magneto-optic switch based on nanosecond pulses

    NASA Astrophysics Data System (ADS)

    Weng, Zi-Hua; Ruan, Jian-Jian; Lin, Shao-Han; Chen, Zhi-Min

    2011-09-01

    The paper studies an all fiber high-speed magneto-optic switch which includes an optical route, a nanosecond pulse generator, and a magnetic field module in order to reduce the switching time of the optical switch in the all optical network. A compact nanosecond pulse generator can be designed based on the special character of the avalanche transistor. The output current pulse of the nanosecond pulse generator is less than 5 ns, while the pulse amplitude is more than 100 V and the pulse width is about 10 to 20 ns, which is able to drive a high-speed magnetic field. A solenoid is used as the magnetic field module, and a bismuth-substituted rare-earth iron garnet single crystal is chosen as the Faraday rotator. By changing the direction of current in the solenoid quickly, the magnetization of the magneto-optic material is reversed, and the optical beam can be rapidly switched. The experimental results indicate that the switching time of the device is about 100 to 400 ns, which can partially meet the demand of the rapid development of the all optical network.

  5. Fundamentals and technology for monolithically integrated RF MEMS switches with ultra-nanocrystaline diamond dielectric/CMOS devices.

    SciTech Connect

    Auciello, O.; Sumant, A.; Goldsmith, C.; O'Brien, S.; Sampath, S.; Gudeman, C; Wang, W.; Hwang, J.; Swonger, J.; Carlisle, J.; Balachandran, S.; MEMtronics Corp.; Innovative Micro Technology; Lehigh Univ.; Peregrine Semiconductor; Advanced Diamond Technologies

    2010-01-01

    Most current capacitive RF-MEMS switch technology is based on conventional dielectric materials such as SiO{sub 2} and Si{sub 3}N{sub 4}. However, they suffer not only from charging problems but also stiction problems leading to premature failure of an RF-MEMS switch. Ultrananocrystalline diamond (UNCD{sup (R)}) (2-5 nm grains) and nanocrystalline diamond (NCD) (10-100 nm grains) films exhibit one of the highest Young's modulus ({approx} 980-1100 GPa) and demonstrated MEMS resonators with the highest quality factor (Q {ge} 10,000 in air for NCD) today, they also exhibit the lowest force of adhesion among MEMS/NEMS materials ({approx}10 mJ/m{sup 2}-close to van der Waals attractive force for UNCD) demonstrated today. Finally, UNCD exhibits dielectric properties (fast discharge) superior to those of Si and SiO{sub 2}, as shown in this paper. Thus, UNCD and NCD films provide promising platform materials beyond Si for a new generation of important classes of high-performance MEMS/NEMS devices.

  6. Electrical properties and switching mechanisms of flexible organic-inorganic bistable devices

    NASA Astrophysics Data System (ADS)

    Onlaor, K.; Tunhoo, B.; Thiwawong, T.; Nukeaw, J.

    2013-08-01

    The electrical properties of flexible organic-inorganic bistable devices fabricated with aluminum (Al) sandwiched between tris-(8-hydroxyquinoline) aluminum (Alq3) and zinc selenide (ZnSe) layers were investigated. Current-voltage (I-V) measurements were conducted under conditions before, during, and after bending while changing the bending distance of the base plastic polyethylene terephthalate (PET) systematically. The maximum ON/OFF current ratios of the flexible bistable devices at flat and bent conditions were approximately 2.7×104 and 1.9×104, respectively. The conduction mechanisms in both ON and OFF states were analyzed by a theoretical model.

  7. Percolation network in resistive switching devices with the structure of silver/amorphous silicon/p-type silicon

    SciTech Connect

    Liu, Yanhong; Gao, Ping; Bi, Kaifeng; Peng, Wei; Jiang, Xuening; Xu, Hongxia

    2014-01-27

    Conducting pathway of percolation network was identified in resistive switching devices (RSDs) with the structure of silver/amorphous silicon/p-type silicon (Ag/a-Si/p-Si) based on its gradual RESET-process and the stochastic complex impedance spectroscopy characteristics (CIS). The formation of the percolation network is attributed to amounts of nanocrystalline Si particles as well as defect sites embedded in a-Si layer, in which the defect sites supply positions for Ag ions to nucleate and grow. The similar percolation network has been only observed in Ag-Ge-Se based RSD before. This report provides a better understanding for electric properties of RSD based on the percolation network.

  8. Multiple Negative Differential Resistance Device by Using the Ambipolar Behavior of Tunneling Field Effect Transistor with Fast Switching Characteristics.

    PubMed

    Jeong, Jae Won; Jang, E-San; Shin, Sunhae; Kim, Kyung Rok

    2016-05-01

    We propose a novel double-peak negative differential resistance (NDR) characteristic at the conventional single-peak MOS-NDR circuit by employing ambipolar behavior of TFET. The fluctuated voltage transfer curve (VTC) from ambipolar inverter is analyzed with simple model and successfully demonstrated with TFET, as a practical example, on the device simulation. We also verified that the fluctuated VTC generates additional peak and valleys on NDR characteristics by using circuit simulations. Moreover, by adjusting the threshold voltage of conventional MOSFET, ultra-high 1st and 2nd peak-to-valley current ratio (PVCR) over 10(7) is obtained with fully suppressed valley currents. The proposed double-peak NDR circuit expected to apply on faster switching and low power multi-functional applications. PMID:27483818

  9. AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit

    NASA Astrophysics Data System (ADS)

    Raman, Ajay; Dasgupta, Sansaptak; Rajan, Siddharth; Speck, James S.; Mishra, Umesh K.

    2008-05-01

    In this paper, AlGaN channels for high electron mobility transistors (HEMTs) have been evaluated based on a power device figure of merit. AlGaN-channel HEMTs grown on SiC substrates by plasma-assisted molecular beam epitaxy (PAMBE) were fabricated. Maximum saturation current of 0.55 A/mm was obtained at VGS=1 V. Current-gain cutoff ( ft) and power-gain cutoff ( fmax) frequencies obtained from small signal measurements were ft=13.2 GHz and fmax=41 GHz. Pulsed current-voltage (I-V) measurements at 200 ns showed no dispersion in I-V curves. Large signal continuous wave (CW) measurement yielded an output power density of 4.5 W/mm with power added efficiency (PAE) of 59% at 4 GHz. This work demonstrates the potential of AlGaN channel HEMTs for high voltage switching and microwave power applications.

  10. Spontaneous symmetry breaking in cosmos: the hybrid symmetron as a dark energy switching device

    SciTech Connect

    Bamba, K.; Nojiri, S.; Gannouji, R.; Kamijo, M.; Sami, M. E-mail: gannouji@rs.kagu.tus.ac.jp E-mail: nojiri@phys.nagoya-u.ac.jp

    2013-07-01

    We consider symmetron model in a generalized background with a hope to make it compatible with dark energy. We observe a ''no go'' theorem at least in case of a conformal coupling. Being convinced of symmetron incapability to be dark energy, we try to retain its role for spontaneous symmetry breaking and assign the role of dark energy either to standard quintessence or F(R) theory which are switched on by symmetron field in the symmetry broken phase. The scenario reduces to standard Einstein gravity in the high density region. After the phase transition generated by symmetron field, either the F(R) gravity or the standard quintessence are induced in the low density region. we demonstrate that local gravity constraints and other requirements are satisfied although the model could generate the late-time acceleration of Universe.

  11. Wafer level hermetic package and device testing of a SOI-MEMS switch for biomedical applications

    NASA Astrophysics Data System (ADS)

    Receveur, Rogier A. M.; Zickar, Michael; Marxer, Cornel; Larik, Vincent; de Rooij, Nicolaas F.

    2006-04-01

    We have designed a wafer level chip scale package for a bi-stable SOI-MEMS dc switch using a silicon-glass hermetic seal with through the lid feedthroughs. Bonded at 365 °C, 230 V and 250 kg, they pass the fine/gross leak test after thermal cycling and mechanical shock/vibration according to MIL-STD-833, fulfilling the requirements for biomedical applications. The measured shear strength is 114 ± 26 N in correspondence with the theoretically expected 100 N. Ruthenium microcontacts are a factor of 100 more robust than gold microcontacts, being stable over 106 cycles measured in a N2 atmosphere inside the package presented here. Future work will include a more extensive bond quality assessment and continued microcontact reliability measurements.

  12. In situ TEM Observation of Resistance Switching in Titanate Based Device

    PubMed Central

    Yang, Yang; Lü, Weiming; Yao, Yuan; Sun, Jirong; Gu, Changzhi; Gu, Lin; Wang, Yanguo; Duan, Xiaofeng; Yu, Richeng

    2014-01-01

    After decades of efforts, the research on resistance switching (RS) behavior in transition metal oxides has shifted to the stage of verifying the proposed models by direct experimental evidences. In this paper, RS behavior and oxygen content variation of La0.85Sr0.15TiO3/SrTiO3:Nb (LSTO/STON) were investigated by in situ transmission electron microscopy observation and in situ electron energy loss spectrum characterization under external electric field. The oxygen content fluctuation adjusted by applied bias has been investigated and the observed results imply the conductive channels should be formed by the oxygen vacancy at the Pt/LSTO interface. Moreover, in situ TEM characterization displays the advantage - to reveal the origin of various RS behaviors. PMID:24463532

  13. Switch contact device for interrupting high current, high voltage, AC and DC circuits

    DOEpatents

    Via, Lester C.; Witherspoon, F. Douglas; Ryan, John M.

    2005-01-04

    A high voltage switch contact structure capable of interrupting high voltage, high current AC and DC circuits. The contact structure confines the arc created when contacts open to the thin area between two insulating surfaces in intimate contact. This forces the arc into the shape of a thin sheet which loses heat energy far more rapidly than an arc column having a circular cross-section. These high heat losses require a dramatic increase in the voltage required to maintain the arc, thus extinguishing it when the required voltage exceeds the available voltage. The arc extinguishing process with this invention is not dependent on the occurrence of a current zero crossing and, consequently, is capable of rapidly interrupting both AC and DC circuits. The contact structure achieves its high performance without the use of sulfur hexafluoride.

  14. Broadband all-optical modulation in hydrogenated-amorphous silicon waveguides.

    PubMed

    Narayanan, Karthik; Elshaari, Ali W; Preble, Stefan F

    2010-05-10

    We demonstrate broadband all-optical modulation in low loss hydrogenated-amorphous silicon (a-Si:H) waveguides. Significant modulation (approximately 3 dB) occurs with a device of only 15 microm without the need for cavity interference effects in stark contrast to an identical crystalline silicon waveguide. We attribute the enhanced modulation to the significantly larger free-carrier absorption effect of a-Si:H, estimated here to be alpha = 1.6310(-16)N cm(-1). In addition, we measured the modulation time to be only tau(c) approximately 400 ps, which is comparable to the recombination rate measured in sub-micron crystalline silicon waveguides, illustrating the strong dominance of surface recombination in similar sized (460 nm x 250 nm) a-Si:H waveguides. Consequently, a-Si:H could serve as a high performance platform for backend integrated CMOS photonics. PMID:20588830

  15. Ultrafast switching of an electrochromic device based on layered double hydroxide/Prussian blue multilayered films

    NASA Astrophysics Data System (ADS)

    Liu, Xiaoxi; Zhou, Awu; Dou, Yibo; Pan, Ting; Shao, Mingfei; Han, Jingbin; Wei, Min

    2015-10-01

    Electrochromic materials are the most important and essential components in an electrochromic device. Herein, we fabricated high-performance electrochromic films based on exfoliated layered double hydroxide (LDH) nanosheets and Prussian blue (PB) nanoparticles via the layer-by-layer assembly technique. X-ray diffraction and UV-vis absorption spectroscopy indicate a periodic layered structure with uniform and regular growth of (LDH/PB)n ultrathin films (UTFs). The resulting (LDH/PB)n UTF electrodes exhibit electrochromic behavior arising from the reversible K+ ion migration into/out of the PB lattice, which induces a change in the optical properties of the UTFs. Furthermore, an electrochromic device (ECD) based on the (LDH/PB)n-ITO/0.1 M KCl electrolyte/ITO sandwich structure displays superior response properties (0.91/1.21 s for coloration/bleaching), a comparable coloration efficiency (68 cm2 C-1) and satisfactory optical contrast (45% at 700 nm), in comparison with other inorganic material-based ECDs reported previously. Therefore, this work presents a facile and cost-effective strategy to immobilize electrochemically active nanoparticles in a 2D inorganic matrix for potential application in displays, smart windows and optoelectronic devices.Electrochromic materials are the most important and essential components in an electrochromic device. Herein, we fabricated high-performance electrochromic films based on exfoliated layered double hydroxide (LDH) nanosheets and Prussian blue (PB) nanoparticles via the layer-by-layer assembly technique. X-ray diffraction and UV-vis absorption spectroscopy indicate a periodic layered structure with uniform and regular growth of (LDH/PB)n ultrathin films (UTFs). The resulting (LDH/PB)n UTF electrodes exhibit electrochromic behavior arising from the reversible K+ ion migration into/out of the PB lattice, which induces a change in the optical properties of the UTFs. Furthermore, an electrochromic device (ECD) based on the (LDH

  16. Role of interfacial layer on complementary resistive switching in the TiN/HfO{sub x}/TiN resistive memory device

    SciTech Connect

    Zhang, H. Z.; Ang, D. S. Gu, C. J.; Yew, K. S.; Wang, X. P.; Lo, G. Q.

    2014-12-01

    The role of the bottom interfacial layer (IL) in enabling stable complementary resistive switching (CRS) in the TiN/HfO{sub x}/IL/TiN resistive memory device is revealed. Stable CRS is obtained for the TiN/HfO{sub x}/IL/TiN device, where a bottom IL comprising Hf and Ti sub-oxides resulted from the oxidation of TiN during the initial stages of atomic-layer deposition of HfO{sub x} layer. In the TiN/HfO{sub x}/Pt device, where formation of the bottom IL is suppressed by the inert Pt metal, no CRS is observed. Oxygen-ion exchange between IL and the conductive path in HfO{sub x} layer is proposed to have caused the complementary bipolar switching behavior observed in the TiN/HfO{sub x}/IL/TiN device.

  17. Linear conversion of pressure into concentration, rapid switching of concentration, and generation of linear ramps of concentration in a microfluidic device

    PubMed Central

    Adler, Micha; Groisman, Alex

    2012-01-01

    Mixing of liquids to produce solutions with different concentrations is one of the basic functionalities of microfluidic devices. Generation of specific temporal patterns of concentration in microfluidic devices is an important technique to study responses of cells and model organisms to variations in the chemical composition of their environment. Here, we present a simple microfluidic network that linearly converts pressure at an inlet into concentration of a soluble reagent in an observation region and also enables independent concurrent linear control of concentrations of two reagents. The microfluidic device has an integrated mixer channel with chaotic three-dimensional flow that facilitates rapid switching of concentrations in a continuous range. A simple pneumatic setup generating linear ramps of pressure is used to produce smooth linear ramps and triangular waves of concentration with different slopes. The use of chaotic vs. laminar mixers is discussed in the context of microfluidic devices providing rapid switching and generating temporal waves of concentration. PMID:22550555

  18. Polarity switching of charge transport and thermoelectricity in self-assembled monolayer devices.

    PubMed

    Egger, David A; Rissner, Ferdinand; Zojer, Egbert; Heimel, Georg

    2012-08-22

    Self-assembled monolayer devices can exhibit drastically different charge-transport characteristics and thermoelectric properties despite being composed of isomeric molecules with essentially identical frontier-orbital energies. This is rationalized by the cooperative electrostatic action of local intramolecular dipoles in otherwise nonpolar species, thus revealing new challenges but also new opportunities for the targeted design of functional building blocks in future nanoelectronics. PMID:22807087

  19. All-optical automatic pollen identification: Towards an operational system

    NASA Astrophysics Data System (ADS)

    Crouzy, Benoît; Stella, Michelle; Konzelmann, Thomas; Calpini, Bertrand; Clot, Bernard

    2016-09-01

    We present results from the development and validation campaign of an optical pollen monitoring method based on time-resolved scattering and fluorescence. Focus is first set on supervised learning algorithms for pollen-taxa identification and on the determination of aerosol properties (particle size and shape). The identification capability provides a basis for a pre-operational automatic pollen season monitoring performed in parallel to manual reference measurements (Hirst-type volumetric samplers). Airborne concentrations obtained from the automatic system are compatible with those from the manual method regarding total pollen and the automatic device provides real-time data reliably (one week interruption over five months). In addition, although the calibration dataset still needs to be completed, we are able to follow the grass pollen season. The high sampling from the automatic device allows to go beyond the commonly-presented daily values and we obtain statistically significant hourly concentrations. Finally, we discuss remaining challenges for obtaining an operational automatic monitoring system and how the generic validation environment developed for the present campaign could be used for further tests of automatic pollen monitoring devices.

  20. [Measuring device for rapid determination of tube peak voltage and the switch-on time of roentgen equipment].

    PubMed

    Bronder, T; Eickelkamp, U; Jakschik, J

    1982-11-01

    A prototype of a measuring device is described, which reads the tube peak voltage and the switch-on time of x-ray units by means of two radiation detectors with different energy dependences due to detector materials (Caesium Iodine and Silicon). With a storage oscilloscope the curves of the tube voltage and the relative absorbed dose rate of intensifying screens can be displayed. The measuring range of the tube peak voltage is 60 kV to 150 kV. It is possible to measure exposure times of radiography equipment above 2 ms wit sufficiently low uncertainty. The tube peak voltage has been read with a relative uncertainty below 5% for almost all dose rates, which arise in practical application of medical x-ray units, and its calibration is made by means of x-ray apparatus with tube voltage reading, which has been compared to a Ge(Li) spectrometer. The stability of tube voltage reading of the measuring device is only effected by radiation damage of the detectors after a long time of utilization. The small diameter of the probe permits the accommodation of other probes, ionization chambers, phantoms, etc. in the radiation field at the same time. PMID:6217132

  1. ZnO/Al:ZnO Transparent Resistive Switching Devices Grown by Atomic Layer Deposition for Memristor Applications.

    PubMed

    Mundle, Rajeh; Carvajal, Christian; Pradhan, Aswini K

    2016-05-17

    ZnO has intrinsic semiconductor conductivity because of an unintentional doping mechanism resulting from the growth process that is mainly attributable to oxygen vacancies (VO) positioned in the bandgap. ZnO has multiple electronic states that depend on the number of vacancies and the charge state of each vacancy. In addition to the individual electron states, the vacancies have different vibrational states. We developed a high-temperature precursor vapor mask technique using Al2O3 to pattern the atomic layer deposition of ZnO and Al:ZnO layers on ZnO-based substrates. This technique was used to create a memristor device based on Al:ZnO thin films having metallic and semiconducting and insulating transport properties ZnO. We demonstrated that adding combination of Al2O3 and TiO2 barrier layers improved the resistive switching behavior. The change in the resistance between the high- and low-resistivity states of the memristor with a combination of Al2O3 and TiO2 was approximately 157%. The devices were exposed to laser light from three different laser diodes. The 450 nm laser diode noticeably affected the combined Al2O3 and TiO2 barrier, creating a high-resistivity state with a 2.9% shift under illumination. The high-resistivity state shift under laser illumination indicates defect shifts and the thermodynamic transition of ZnO defects. PMID:27124366

  2. Analysis of all-optical light modulation in proteorhodopsin protein molecules

    NASA Astrophysics Data System (ADS)

    Roy, Sukhdev; Sharma, Parag

    2008-03-01

    We present a detailed steady-state and time-dependent theoretical analysis of all-optical light modulation in the recently discovered, wild-type proteorhodopsin (WTpR) protein molecules based on excited-state absorption. Amplitude modulation of cw probe laser beam transmissions at 520, 405, 555 and 560 nm, corresponding to the peak absorption of pR, pRM, pRK and pRN intermediate states of pR photocycle, respectively, by cw and pulsed modulating pump laser beam at 520 nm have been analyzed. The effect of various spectral and kinetic parameters on modulation characteristics has been studied. There is an optimum value of concentration for a given pump intensity value for which maximum modulation of the probe beam can be achieved. The switching characteristics of probe beam at 405 and 520 nm exhibit dip and peak, respectively, which can be removed by decreasing the absorption of pRM state at 520 nm. The modulation in WTpR is at lower pump powers with smaller contrast in comparison to WT bacteriorhodopsin (bR) and WT pharaonis phoborhodopsin (ppR). The modulation characteristics exhibit unique features compared to bR and ppR.

  3. Green Distributed Quality of Transmission Aware Routing and Wavelength Assignment in All-Optical Networks

    NASA Astrophysics Data System (ADS)

    Kakekhani, Amir; Rahbar, Akbar Ghaffarpour

    2013-06-01

    The Routing and Wavelength Assignment (RWA) algorithms that consider quality of transmission (QoT) in light-path setup spend more time than their conventional counterparts due to exhaustive search and QoT estimation. This paper proposes distributed Quality of Transmission Aware Routing and Wavelength Assignment (QARWA) algorithm to handle dynamic light-path provisioning in wavelength routed all-optical networks taking energy consumption of optical switch nodes into account. Specifically, the QARWA considers bit-error rate (BER), setup delay, and energy consumption constraints at the same time, and establishes light-paths with small BER, low setup latency, and reduced energy consumption. We present and evaluate an enhanced wavelength-assignment solution in the QARWA to handle the wavelength continuity constraint. In QARWA, a source node determines the connection path by means of the shortest path algorithm and a destination node selects a wavelength based on the BER limitation and decreasing order of setup latency. Relating energy consumption to processing time, we show that QARWA can decrease the total energy consumption by reducing the processing time at each node. Under QARWA, when a node finishes the processing of the last control packet, it makes transition to either sleep state or idle state. Hence, QARWA can provide the best performance since it can reduce processing time in control units, light-path setup latency, and energy consumption of nodes.

  4. Complete all-optical processing polarization-based binary logic gates and optical processors.

    PubMed

    Zaghloul, Y A; Zaghloul, A R M

    2006-10-16

    We present a complete all-optical-processing polarization-based binary-logic system, by which any logic gate or processor can be implemented. Following the new polarization-based logic presented in [Opt. Express 14, 7253 (2006)], we develop a new parallel processing technique that allows for the creation of all-optical-processing gates that produce a unique output either logic 1 or 0 only once in a truth table, and those that do not. This representation allows for the implementation of simple unforced OR, AND, XOR, XNOR, inverter, and more importantly NAND and NOR gates that can be used independently to represent any Boolean expression or function. In addition, the concept of a generalized gate is presented which opens the door for reconfigurable optical processors and programmable optical logic gates. Furthermore, the new design is completely compatible with the old one presented in [Opt. Express 14, 7253 (2006)], and with current semiconductor based devices. The gates can be cascaded, where the information is always on the laser beam. The polarization of the beam, and not its intensity, carries the information. The new methodology allows for the creation of multiple-input-multiple-output processors that implement, by itself, any Boolean function, such as specialized or non-specialized microprocessors. Three all-optical architectures are presented: orthoparallel optical logic architecture for all known and unknown binary gates, singlebranch architecture for only XOR and XNOR gates, and the railroad (RR) architecture for polarization optical processors (POP). All the control inputs are applied simultaneously leading to a single time lag which leads to a very-fast and glitch-immune POP. A simple and easy-to-follow step-by-step algorithm is provided for the POP, and design reduction methodologies are briefly discussed. The algorithm lends itself systematically to software programming and computer-assisted design. As examples, designs of all binary gates, multiple

  5. 49 CFR 213.235 - Inspection of switches, track crossings, and lift rail assemblies or other transition devices on...

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... TRANSPORTATION TRACK SAFETY STANDARDS Inspection § 213.235 Inspection of switches, track crossings, and lift rail... section, each switch, turnout, track crossing, and moveable bridge lift rail assembly or other transition... once a month, each switch, turnout, track crossing, and moveable bridge lift rail assembly or...

  6. 49 CFR 213.235 - Inspection of switches, track crossings, and lift rail assemblies or other transition devices on...

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... TRANSPORTATION TRACK SAFETY STANDARDS Inspection § 213.235 Inspection of switches, track crossings, and lift rail... section, each switch, turnout, track crossing, and moveable bridge lift rail assembly or other transition... once a month, each switch, turnout, track crossing, and moveable bridge lift rail assembly or...

  7. 49 CFR 213.235 - Inspection of switches, track crossings, and lift rail assemblies or other transition devices on...

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... TRANSPORTATION TRACK SAFETY STANDARDS Inspection § 213.235 Inspection of switches, track crossings, and lift rail... section, each switch, turnout, track crossing, and moveable bridge lift rail assembly or other transition... once a month, each switch, turnout, track crossing, and moveable bridge lift rail assembly or...

  8. A simple device unit consisting of all NiO storage and switch elements for multilevel terabit nonvolatile random access memory.

    PubMed

    Lee, Myoung-Jae; Ahn, Seung-Eon; Lee, Chang Bum; Kim, Chang-Jung; Jeon, Sanghun; Chung, U-In; Yoo, In-Kyeong; Park, Gyeong-Su; Han, Seungwu; Hwang, In Rok; Park, Bae-Ho

    2011-11-01

    Present charge-based silicon memories are unlikely to reach terabit densities because of scaling limits. As the feature size of memory shrinks to just tens of nanometers, there is insufficient volume available to store charge. Also, process temperatures higher than 800 °C make silicon incompatible with three-dimensional (3D) stacking structures. Here we present a device unit consisting of all NiO storage and switch elements for multilevel terabit nonvolatile random access memory using resistance switching. It is demonstrated that NiO films are scalable to around 30 nm and compatible with multilevel cell technology. The device unit can be a building block for 3D stacking structure because of its simple structure and constituent, high performance, and process temperature lower than 300 °C. Memory resistance switching of NiO storage element is accompanied by an increase in density of grain boundary while threshold resistance switching of NiO switch element is controlled by current flowing through NiO film. PMID:21988144

  9. Sub-nanosecond threshold-switching dynamics and set process of In3SbTe2 phase-change memory devices

    NASA Astrophysics Data System (ADS)

    Pandey, Shivendra Kumar; Manivannan, Anbarasu

    2016-06-01

    Phase-change materials show promising features for high-speed, non-volatile, random access memory, however achieving a fast electrical switching is a key challenge. We report here, the dependence of electrical switching dynamics including transient parameters such as delay time, switching time, etc., on the applied voltage and the set process of In3SbTe2 phase-change memory devices at the picosecond (ps) timescale. These devices are found to exhibit threshold-switching at a critical voltage called threshold-voltage, VT of 1.9 ± 0.1 V, having a delay time of 25 ns. Further, the delay time decreases exponentially to a remarkably smaller value, as short as 300 ± 50 ps upon increasing the applied voltage up to 1.1VT. Furthermore, we demonstrate a rapid phase-change behavior from amorphous (˜10 MΩ) to poly-crystalline (˜10 kΩ) phase using time-resolved measurements revealing an ultrafast set process, which is primarily initiated by the threshold-switching process within 550 ps for an applied voltage pulse with a pulse-width of 1.5 ns and an amplitude of 2.3 V.

  10. Implementation of all-optical reversible logic gate based on holographic laser induced grating using azo-dye doped polymers

    NASA Astrophysics Data System (ADS)

    Forsati, Rana; Valipour Ebrahimi, Sara; Navi, Keivan; Mohajerani, Ezeddin; Jashnsaz, Hossein

    2013-02-01

    Increasing demand for power reduction in computer systems has led to new trends in computations and computer design including reversible computing. Its main aim is to eliminate power dissipation in logical elements but can have some other advantages such as data security and error prevention. Because of interesting properties of reversible computing, implementing computing devices with reversible manner is the only way to make the reversible computing a reality. In recent years, reversible logic has turned out to be a promising computing paradigm having application in CMOS, nanotechnology, quantum computing and optical computing. In this paper, we propose and realize a novel implementation of Toffoli gate in all-optical domain. We have explained its principle of operations and described an actual experimental implementation. The all-optical reversible gate presented in this paper will be useful in different applications such as arithmetic and logical operations in the domain of reversible logic-based computing.

  11. The effect of doping Sb on the electronic structure and the device characteristics of Ovonic Threshold Switches based on Ge-Se

    PubMed Central

    Shin, Sang-Yeol; Choi, J. M.; Seo, Juhee; Ahn, Hyung-Woo; Choi, Yong Gyu; Cheong, Byung-ki; Lee, Suyoun

    2014-01-01

    The Ovonic Threshold Switch (OTS) based on an amorphous chalcogenide material has attracted much interest as a promising candidate for a high-performance thin-film switching device enabling 3D-stacking of memory devices. In this work, we studied on the electronic structure of amorphous Sb-doped Ge0.6Se0.4 (in atomic mole fraction) film and its characteristics as to OTS devices. From the optical absorption spectroscopy measurement, the band gap (Eg) was found to decrease with increasing Sb content. In addition, as Sb content increased, the activation energy (Ea) for electrical conduction was found to decrease down to about one third of Eg from a half. As to the device characteristics, we found that the threshold switching voltage (Vth) drastically decreased with the Sb content. These results, being accountable in terms of the changes in the bonding configuration of constituent atoms as well as in the electronic structure such as the energy gap and trap states, advance an effective method of compositional adjustment to modulate Vth of an OTS device for various applications. PMID:25403772

  12. Low programming voltage resistive switching in reactive metal/polycrystalline Pr 0.7Ca 0.3MnO 3 devices

    NASA Astrophysics Data System (ADS)

    Liu, Xinjun; Biju, Kuyyadi P.; Bourim, El Mostafa; Park, Sangsu; Lee, Wootae; Shin, Jungho; Hwang, Hyunsang

    2010-12-01

    The resistive switching (RS) characteristics of Pt/Pr 0.7Ca 0.3MnO 3 (PCMO)/W devices with a submicron via-hole structure are investigated. Reproducible and stable switching behavior was achieved in voltage sweeping cycles, while the resistance change was more than two orders of magnitude. No forming process was required to induce the RS. Detailed current density-voltage analysis suggest that the oxidation and reduction reaction of an interfacial WO x layer by electrochemical migration of oxygen between the W bottom electrode and the PCMO layer plays a crucial role in the RS of the Pt/PCMO/W structures Furthermore, the relatively low programming voltage ( ±1.5 V), which is significantly less than the values previously reported in chemically reactive metal/PCMO devices, might be ascribed to the thermal-assisted RS and the unique properties of W metal and its oxides in nano-scale devices.

  13. New structure of three-terminal GaAs p(+)-n(-)-delta(p+)-n(-)-n(+) switching device prepared by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Wang, Y. H.; Yarn, K. F.; Chang, C. Y.; Jame, M. S.

    1987-08-01

    A new three-terminal GaAs p(+)-n(-)-delta(p+)-n(-)-n(+), voltage-controlled switching device grown by molecular beam epitaxy is presented. A simple method to contact the third terminal is employed by applying the Au-Zn to the delta(p+) barrier using the B-groove etching technique, in which the delta(p+) barrier height can be directly modulated by the external voltage. The device may be more effective than other voltage-controlled devices due to the direct barrier modulation.

  14. All-optical clock recovery for 40Gbs using an amplified feedback DFB laser

    NASA Astrophysics Data System (ADS)

    Sun, Yu; Pan, J. Q.; Zhao, L. J.; Chen, W. X.; Wang, W.; Wang, L.; Zhao, X. F.; Lou, C. Y.

    2009-11-01

    All-optical clock recovery is a key technology in all-optical 3R signal regeneration (Re-amplification, Retiming, and Reshaping) process. In this paper, a monolithic integrated three-section amplified feedback semiconductor laser (AFL) is demonstrated as an all optical clock regenerator. We fabricated a three-section AFL using quantum well intermixing process without regrowth instead of butt-joint process. The tunable characteristics of three-section AFL were investigated, and all optical clock recovery for 40Gb/s return to zero (RZ) 231-1 pseudorandom binary sequence (PRBS) is demonstrated experimentally using AFL with time jitter about 689.2fs.

  15. Recent Advances in Photonic Devices for Optical Computing and the Role of Nonlinear Optics-Part II

    NASA Technical Reports Server (NTRS)

    Abdeldayem, Hossin; Frazier, Donald O.; Witherow, William K.; Banks, Curtis E.; Paley, Mark S.

    2007-01-01

    The twentieth century has been the era of semiconductor materials and electronic technology while this millennium is expected to be the age of photonic materials and all-optical technology. Optical technology has led to countless optical devices that have become indispensable in our daily lives in storage area networks, parallel processing, optical switches, all-optical data networks, holographic storage devices, and biometric devices at airports. This chapters intends to bring some awareness to the state-of-the-art of optical technologies, which have potential for optical computing and demonstrate the role of nonlinear optics in many of these components. Our intent, in this Chapter, is to present an overview of the current status of optical computing, and a brief evaluation of the recent advances and performance of the following key components necessary to build an optical computing system: all-optical logic gates, adders, optical processors, optical storage, holographic storage, optical interconnects, spatial light modulators and optical materials.

  16. Fabrication of graphene-nanoflake/poly(4-vinylphenol) polymer nanocomposite thin film by electrohydrodynamic atomization and its application as flexible resistive switching device

    NASA Astrophysics Data System (ADS)

    Choi, Kyung Hyun; Ali, Junaid; Na, Kyoung-Hoan

    2015-10-01

    This paper describes synthesis of graphene/poly(4-vinylphenol) (PVP) nanocomposite and deposition of thin film by electrohydrodynamic atomization (EHDA) for fabrication flexible resistive switching device. EHDA technique proved its viability for thin film deposition after surface morphology analyses by field emission scanning electron microscope (FESEM) and non-destructive 3D Nano-profilometry, as the deposited films were, devoid of abnormalities. The commercially available graphene micro-flakes were exfoliated and broken down to ultra-small (20 nm-200 nm) nano-flakes by ultra-sonication in presence of N-methyl-pyrrolidone (NMP). These graphene nanoflakes with PVP nanocomposite, were successfully deposited as thin films (thickness ~140±7 nm, Ra=2.59 nm) on indium-tin-oxide (ITO) coated polyethylene terephthalate (PET) substrate. Transmittance data revealed that thin films are up to ~87% transparent in visible and NIR region. Resistive switching behaviour of graphene/PVP nanocomposite thin film was studied by using the nanocomposite as active layer in Ag/active layer/ITO sandwich structure. The resistive switching devices thus fabricated, showed characteristic OFF to ON (high resistance to low resistance) transition at low voltages, when operated between ±3 V, characterized at 10 nA compliance currents. The devices fabricated by this approach exhibited a stable room temperature, low power current-voltage hysteresis and well over 1 h retentivity, and ROFF/RON≈35:1. The device showed stable flexibility up to a minimum bending diameter of 1.8 cm.

  17. Femtosecond all-optical parallel logic gates based on tunable saturable to reverse saturable absorption in graphene-oxide thin films

    SciTech Connect

    Roy, Sukhdev Yadav, Chandresh

    2013-12-09

    A detailed theoretical analysis of ultrafast transition from saturable absorption (SA) to reverse saturable absorption (RSA) has been presented in graphene-oxide thin films with femtosecond laser pulses at 800 nm. Increase in pulse intensity leads to switching from SA to RSA with increased contrast due to two-photon absorption induced excited-state absorption. Theoretical results are in good agreement with reported experimental results. Interestingly, it is also shown that increase in concentration results in RSA to SA transition. The switching has been optimized to design parallel all-optical femtosecond NOT, AND, OR, XOR, and the universal NAND and NOR logic gates.

  18. Study of the switching rate of gas-discharge devices based on the open discharge with counter-propagating electron beams

    SciTech Connect

    Bokhan, P. A.; Gugin, P. P.; Lavrukhin, M. A.; Zakrevsky, Dm. E.

    2015-06-15

    The switching rate of gas-discharge devices “kivotrons” based on the open discharge with counter-propagating electron beams has been experimentally studied. Structures with 2-cm{sup 2} overall cathode area were examined. The switching time was found to show a monotonic decrease with increasing the working-gas helium pressure and with increasing the voltage across the discharge gap at breakdown. The minimum switching time was found to be ∼240 ps at 17 kV voltage, and the maximum rate of electric-current rise limited by the discharge-circuit inductance was 3 × 10{sup 12 }A/s.

  19. Voltage-controlled low-energy switching of nanomagnets through Ruderman-Kittel-Kasuya-Yosida interactions for magnetoelectric device applications

    NASA Astrophysics Data System (ADS)

    Ghosh, Bahniman; Dey, Rik; Register, Leonard F.; Banerjee, Sanjay K.

    2016-07-01

    In this article, we consider through simulation low-energy switching of nanomagnets via electrostatically gated inter-magnet Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions on the surface of three-dimensional topological insulators, for possible memory and nonvolatile logic applications. We model the possibility and dynamics of RKKY-based switching of one nanomagnet by coupling to one or more nanomagnets of set orientation. Potential applications to both memory and nonvolatile logic are illustrated. Sub-attojoule switching energies, far below conventional spin transfer torque (STT)-based memories and even below CMOS logic appear possible. Switching times on the order of a few nanoseconds, comparable to times for STT switching, are estimated for ferromagnetic nanomagnets, but the approach also appears compatible with the use of antiferromagnets which may allow for faster switching.

  20. Bipolar resistive switching properties of Ti-CuO/(hexafluoro-hexa-peri-hexabenzocoronene)-Cu hybrid interface device: Influence of electronic nature of organic layer

    SciTech Connect

    Singh, Bharti; Mehta, B. R.; Varandani, Deepak; Govind; Narita, A.; Feng, X.; Muellen, K.

    2013-05-28

    This study reports the change in the structural and junction properties of Ti-CuO-Cu structure on incorporation of a 2-dimensional (2D) organic layer comprising of n-type hexafluoro-hexa-peri-hexabenzocoronene (6F-HBC). A bipolar resistive switching is observed in the device having interface between sputter deposited copper oxide (CuO) and vacuum sublimated 6F-HBC hybrid interface. The CuO/6F-HBC hybrid interface exhibits rectifying I-V characteristics in complete contrast to the ohmic and rectifying characteristics of junctions based on individual 6F-HBC and CuO layers. Large change in resistive switching property from unipolar resistive switching in CuO/HBC to bipolar resistive switching in CuO/6F-HBC interface was observed. At the CuO/6F-HBC interface, C1s peak corresponding to fluorinated carbon is shifted by 0.68 eV towards higher binding energy (BE) side and O1s peak due to non-lattice oxygen is shifted by 0.6 eV towards lower BE, confirming the interaction of O{sup 2-} ion in CuO with fluorinated carbon atoms in 6F-HBC at the hybrid interface. Correlation between conductive atomic force microscopy images and atomic force microscopy topography images, I-V characteristics in conducting, non-conducting, and pristine regions along with x-ray photoelectron spectroscopy results establishes the important role of hybrid interface to determining the resistive switching properties. This study demonstrates that the resistive switching and interface properties of a hybrid device based on inorganic and organic 2D materials can be modified by changing the electronic properties of organic layer by attaching suitable functional groups.

  1. All-optical polarization control and noise cleaning based on a nonlinear lossless polarizer

    NASA Astrophysics Data System (ADS)

    Barozzi, Matteo; Vannucci, Armando; Picchi, Giorgio

    2015-01-01

    We propose an all-optical fiber-based device able to accomplish both polarization control and OSNR enhancement of an amplitude modulated optical signal, affected by unpolarized additive white Gaussian noise, at the same time. The proposed noise cleaning device is made of a nonlinear lossless polarizer (NLP), that performs polarization control, followed by an ideal polarizing filter that removes the orthogonally polarized half of additive noise. The NLP transforms every input signal polarization into a unique, well defined output polarization (without any loss of signal energy) and its task is to impose a signal polarization aligned with the transparent eigenstate of the polarizing filter. In order to effectively control the polarization of the modulated signal, we show that two different NLP configurations (with counter- or co-propagating pump laser) are needed, as a function of the signal polarization coherence time. The NLP is designed so that polarization attraction is effective only on the "noiseless" (i.e., information-bearing) component of the signal and not on noise, that remains unpolarized at the NLP output. Hence, the proposed device is able to discriminate signal power (that is preserved) from in-band noise power (that is partly suppressed). Since signal repolarization is detrimental if applied to polarization-multiplexed formats, the noise cleaner application is limited here to "legacy" links, with 10 Gb/s OOK modulation, still representing the most common format in deployed networks. By employing the appropriate NLP configurations, we obtain an OSNR gain close to 3dB. Furthermore, we show how the achievable OSNR gain can be estimated theoretically.

  2. Low timing jitter 40 Gb/s all-optical clock recovery based on an amplified feedback laser diode

    NASA Astrophysics Data System (ADS)

    Chen, Cheng; Qiu, Jifang; Zhao, Lingjuan; Wu, Jian; Lou, Caiyun; Wang, Wei

    2012-06-01

    We demonstrate 40 Gb/s all-optical clock recovery by using a monolithic integrated amplified-feedback laser (AFL) with coherent injection-locked method. The AFL consists of a gain-coupled DFB laser and an optical amplified feedback external cavity. With proper design and operation of AFL, the device can work at self-pulsation state that resulted from the beating between two lasing modes. The self-pulsation can be injection-locked to the optical clock embedded in input data streams. Due to different work mechanisms, there are two all-optical clock recovery operation modes: incoherent injection-locked and coherent injection-locked. It's predicted that the coherent injection method has various advantages: 1) requiring low injection power recovery, 2) independent of the bit rate and 3) introducing little timing jitter to the recovered clock. The robustness of coherent clock recovery is confirmed by our experimental results. We set up a return-to- zero (RZ) pseudorandom binary sequence (PRBS) data streams all-optical clock recovery system. This coherent injection-locked based clock recovery method is optical signal noise ratio (OSNR) and chromatic dispersion (CD) degeneration tolerant, and has low timing jitter and high sensitivity.

  3. All-optical signal processing at 10 GHz using a photonic crystal molecule

    SciTech Connect

    Combrié, Sylvain; Lehoucq, Gaëlle; Junay, Alexandra; De Rossi, Alfredo; Malaguti, Stefania; Bellanca, Gaetano; Trillo, Stefano; Ménager, Loic; Peter Reithmaier, Johann

    2013-11-04

    We report on 10 GHz operation of an all-optical gate based on an Indium Phosphide Photonic Crystal Molecule. Wavelength conversion and all-optical mixing of microwave signals are demonstrated using the 2 mW output of a mode locked diode laser. The spectral separation of the optical pump and signal is crucial in suppressing optical cross-talk.

  4. Electromagnetically induced transparency in a diamond spin ensemble enables all-optical electromagnetic field sensing.

    PubMed

    Acosta, V M; Jensen, K; Santori, C; Budker, D; Beausoleil, R G

    2013-05-24

    We use electromagnetically induced transparency (EIT) to probe the narrow electron-spin resonance of nitrogen-vacancy centers in diamond. Working with a multipass diamond chip at temperatures 6-30 K, the zero-phonon absorption line (637 nm) exhibits an optical depth of 6 and inhomogeneous linewidth of ~30 GHz FWHM. Simultaneous optical excitation at two frequencies separated by the ground-state zero-field splitting (2.88 GHz) reveals EIT resonances with a contrast exceeding 6% and FWHM down to 0.4 MHz. The resonances provide an all-optical probe of external electric and magnetic fields with a projected photon-shot-noise-limited sensitivity of 0.2 V/cm/√[Hz] and 0.1 nT/√[Hz], respectively. Operation of a prototype diamond-EIT magnetometer measures a noise floor of ~/<1 nT/√[Hz] for frequencies above 10 Hz and Allan deviation of 1.3±1.1 nT for 100 s intervals. The results demonstrate the potential of diamond-EIT devices for applications ranging from quantum-optical memory to precision measurement and tests of fundamental physics. PMID:23745875

  5. A matrix based on germanium/ormosil system for all-optical applications

    NASA Astrophysics Data System (ADS)

    Gao, Tianxi; Que, Wenxiu; Wang, Yushu

    2016-05-01

    Germania/ormosil hybrid matrix with large third-order nonlinearity is prepared by a low-temperature sol-gel process. Z-scan measurements indicate that the film fabricated from the pure Germania/ormosil hybrid solution shows an excellent third-order nonlinearity at all measured wavelengths. In order to explore its potential to be a functional matrix, a well-investigated organic dopant disperse red 1 (DR1) azoaromatic chromophore is introduced into the Germania/ormosil system. As a comparison, the poly(methyl methacrylate) (PMMA) polymer is employed and doped with the same content of DR1 molecule. Results indicate that by employing Germania/ormosil matrix system, the figure of merit of DR1-doped material at 532 nm can be greatly improved as compared to that of the PMMA/DR1 polymer film and also other published reports. This improvement helps broaden the limited applications of DR1-doped material and make it acceptable for devices fabrication at 532 nm. Results demonstrate that the as-prepared hybrid matrix might be a promising candidate for all-optical applications.

  6. An all-optical Compton source for single-exposure x-ray imaging

    NASA Astrophysics Data System (ADS)

    Döpp, A.; Guillaume, E.; Thaury, C.; Gautier, J.; Andriyash, I.; Lifschitz, A.; Malka, V.; Rousse, A.; Phuoc, K. Ta

    2016-03-01

    All-optical Compton sources are innovative, compact devices to produce high energy femtosecond x-rays. Here we present results on a single-pulse scheme that uses a plasma mirror to reflect the drive beam of a laser plasma accelerator and to make it collide with the highly-relativistic electrons in its wake. The accelerator is operated in the self-injection regime, producing quasi-monoenergetic electron beams of around 150 MeV peak energy. Scattering with the intense femtosecond laser pulse leads to the emission of a collimated high energy photon beam. Using continuum-attenuation filters we measure significant signal content beyond 100 keV and with simulations we estimate a peak photon energy of around 500 keV. The source divergence is about 13 mrad and the pointing stability is 7 mrad. We demonstrate that the photon yield from the source is sufficiently high to illuminate a centimeter-size sample placed 90 centimeters behind the source, thus obtaining radiographs in a single shot.

  7. All-optical digital 4 × 2 encoder based on 2D photonic crystal ring resonators

    NASA Astrophysics Data System (ADS)

    Moniem, Tamer A.

    2016-04-01

    The photonic crystals draw significant attention to build all-optical logic devices and are considered one of the solutions for the opto-electronic bottleneck via speed and size. The paper presents a novel optical 4 × 2 encoder based on 2D square lattice photonic crystals of silicon rods. The main realization of optical encoder is based on the photonic crystal ring resonator NOR gates. The proposed structure has four logic input ports, two output ports, and two bias input port. The photonic crystal structure has a square lattice of silicon rods with a refractive index of 3.39 in air. The structure has lattice constant 'a' equal to 630 nm and bandgap range from 0.32 to 044. The total size of the proposed 4 × 2 encoder is equal to 35 μm × 35 μm. The simulation results using the dimensional finite difference time domain and Plane Wave Expansion methods confirm the operation and the feasibility of the proposed optical encoder for ultrafast optical digital circuits.

  8. Switching Transistor

    NASA Technical Reports Server (NTRS)

    1981-01-01

    Westinghouse Electric Corporation's D60T transistors are used primarily as switching devices for controlling high power in electrical circuits. It enables reduction in the number and size of circuit components and promotes more efficient use of energy. Wide range of application from a popcorn popper to a radio frequency generator for solar cell production.

  9. Progress in system design using integrated multi-element interferometric switches

    NASA Astrophysics Data System (ADS)

    Kehayas, E.; Kanellos, G. T.; Stampoulidis, L.; Theophilopoulos, G.; Avramopoulos, H.

    2007-11-01

    In the present communication we discuss recent advances in the development of Semiconductor optical amplifier (SOA)-based interferometric optical gates and their use through the implementation of functional high-speed optical systems. SOA Mach-Zehnder interferometers (SOA-MZI) show great potential for being used as fundamental building blocks in developing intelligent high speed all-optical sub-systems. In this context we discuss the development of optical systems that perform diverse and non-trivial network functionalities that find application in Optical Packet/Burst Switching networks (OPS/OBS). The use of generic building blocks to develop a variety of optical sub-systems is essential, as this avoids the requirement for custom-made technological solutions and allows for a common fabrication procedure for all subsystems. In this context, we discuss latest research on integration of arrays of such optical switches onto the same photonic chip using hybrid integration technology. The development of such arrays reduces the cost of photonic devices by sharing the packaging and pigtailing costs. By using an integrated quadruple array of SOA-MZI switches we demonstrate the front-end unit of an All-optical Label Switched node that performs clock recovery, data recovery and label/payload separation, and a scalable Time Slot Interchanger (TSI), proving the multi-functionality and processing power of such device. Both functional systems exhibit comparable performance compared to implementations using single switches with significantly lower device costs. The cost reduction offered by the integration of multiple switches on the same chip is also evident in high-speed WDM networks, where multi-wavelength regeneration can be achieved with the use of several integrated switch arrays.

  10. The Switching Dynamics and Optimisation of Optical Bistability in Indium Antimonide.

    NASA Astrophysics Data System (ADS)

    Iltaif, Abdul-Hussain Khudhair

    Available from UMI in association with The British Library. This thesis is concerned with the experimental study and analysis of optical bistability in fully optimised InSb systems. The related phenomena of coherent modulation, switching dynamics, noise effects, high finesse etalons and the development of optoelectronic devices are also included. The gain bandwidth product of an InSb transphasor has been studied experimentally using two beams from a low power cw CO laser. The switching dynamics are analysed in terms of effective time constants which change dramatically near the switch points. Results are presented which show that by overdriving the system, switch times of ~250 ns may be obtained with the CO laser system and <10 ns using pulsed sources. The influence of noise levels, on both the switching dynamics and the system stability close to switching are discussed. Switching out of noise and optical bimodality have been observed through a statistical sequence of ~ 10 ^3 discrete switching operations. An optimisation procedure using a high reflectivity (~80%) InSb etalon (~ 50 μm thick) is described. For this etalon with a 50 μm spot diameter beam, the minimum switching power is ~ 550 muW and switching times are 150 ns, leading to a switching energy for this device ~80 pJ. The practical development of the concept of the direct injection of carriers from an electrode system to InSb material to achieve an optically bistable optoelectronic (OBOE) device which can make complete and interactive communication between an all-optical element and conventional electronic circuitry and computing systems are also discussed.

  11. A novel all-optical label processing for OPS networks based on multiple OOC sequences from multiple-groups OOC

    NASA Astrophysics Data System (ADS)

    Qiu, Kun; Zhang, Chongfu; Ling, Yun; Wang, Yibo

    2007-11-01

    This paper proposes an all-optical label processing scheme using multiple optical orthogonal codes sequences (MOOCS) for optical packet switching (OPS) (MOOCS-OPS) networks, for the first time to the best of our knowledge. In this scheme, the multiple optical orthogonal codes (MOOC) from multiple-groups optical orthogonal codes (MGOOC) are permuted and combined to obtain the MOOCS for the optical labels, which are used to effectively enlarge the capacity of available optical codes for optical labels. The optical label processing (OLP) schemes are reviewed and analyzed, the principles of MOOCS-based optical labels for OPS networks are given, and analyzed, then the MOOCS-OPS topology and the key realization units of the MOOCS-based optical label packets are studied in detail, respectively. The performances of this novel all-optical label processing technology are analyzed, the corresponding simulation is performed. These analysis and results show that the proposed scheme can overcome the lack of available optical orthogonal codes (OOC)-based optical labels due to the limited number of single OOC for optical label with the short code length, and indicate that the MOOCS-OPS scheme is feasible.

  12. Multi-Angle Switched HIFU: A New Ultrasound Device for Controlled Non-Invasive Induction of Small Spherical Ablation Zones—Simulation and Ex-Vivo Results

    NASA Astrophysics Data System (ADS)

    Novák, Petr; Jamshidi-Parsian, Azemat; Benson, Donny G.; Webber, Jessica S.; Moros, Eduardo G.; Shafirstein, Gal; Griffin, Robert J.

    2009-04-01

    Current HIFU devices produce elongated elliptical lesions (cigar shaped) in a single energy deposition. This prohibits the effective use of HIFU in small animal research as well as in clinical treatment where small volumes of tissue surrounded by critical structures need to be destroyed. We developed an ultrasound ablation device that non-invasively creates spheroidal lesions of an arbitrary diameter of up to 1 cm in a depth of up to 5 cm. The device consists of two focused ultrasound transducers aimed to the ablation target volume from two directions at a 90 degree angle. The operation of the transducers is switched back and forth so that only one transducer is energized at a time. A transient analysis of this ablation approach was performed using coupled simulations of acoustical pressure distributions, resulting temperature distributions, and thermal dose deposited to soft tissue. A prototype of the device was developed and tested in-vitro in a phantom and later in ex-vivo experiments in pig liver. The experimental results agreed with the numerical simulations and confirmed the ability of the multi-angle switched HIFU (MASH) device to create small spheroidal lesions in soft tissue within 2 minutes without significantly affecting the surrounding tissues.

  13. Interfacial Electrode-Driven Enhancement of the Switching Parameters of a Copper Oxide-Based Resistive Random-Access Memory Device

    NASA Astrophysics Data System (ADS)

    Sangani, L. D. Varma; Kumar, Ch. Ravi; Krishna, M. Ghanashyam

    2016-01-01

    The characteristics of an Au/Cu x O/Au bipolar resistive random-access memory device are reported. It is demonstrated that switching parameters of this device structure can be enhanced by introducing an interfacial Al layer between the Au top electrode and the Cu x O-based dielectric layer. The set and reset voltages are, respectively, between -2.5 V to -6.0 V and +1.2 V to +3.0 V for the Al-based device. In contrast, the range of values are -0.5 V to -2.5 V and +0.5 V to +1.5 V for the set and reset voltages in the absence of Al. The Al-based device has a higher low resistance state value of 5-6 KΩ as compared to the 0.3-0.5 KΩ for the Au-based device, which leads to a 12 times lower power dissipation factor and lower reset current of 370 μA. Endurance studies carried out over 50 switching cycles show less than 2% variation in both the low resistance and high resistance values. The conduction is ohmic at low values of bias and non-ohmic at higher bias voltage which shows that the enhanced behaviour is a result of the formation of an insulating aluminum oxide layer at the Al-Cu x O interface.

  14. Impact of device size and thickness of Al2O 3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application.

    PubMed

    Panja, Rajeswar; Roy, Sourav; Jana, Debanjan; Maikap, Siddheswar

    2014-12-01

    Impact of the device size and thickness of Al2O3 film on the Cu pillars and resistive switching memory characteristics of the Al/Cu/Al2O3/TiN structures have been investigated for the first time. The memory device size and thickness of Al2O3 of 18 nm are observed by transmission electron microscope image. The 20-nm-thick Al2O3 films have been used for the Cu pillar formation (i.e., stronger Cu filaments) in the Al/Cu/Al2O3/TiN structures, which can be used for three-dimensional (3D) cross-point architecture as reported previously Nanoscale Res. Lett.9:366, 2014. Fifty randomly picked devices with sizes ranging from 8 × 8 to 0.4 × 0.4 μm(2) have been measured. The 8-μm devices show 100% yield of Cu pillars, whereas only 74% successful is observed for the 0.4-μm devices, because smaller size devices have higher Joule heating effect and larger size devices show long read endurance of 10(5) cycles at a high read voltage of -1.5 V. On the other hand, the resistive switching memory characteristics of the 0.4-μm devices with a 2-nm-thick Al2O3 film show superior as compared to those of both the larger device sizes and thicker (10 nm) Al2O3 film, owing to higher Cu diffusion rate for the larger size and thicker Al2O3 film. In consequence, higher device-to-device uniformity of 88% and lower average RESET current of approximately 328 μA are observed for the 0.4-μm devices with a 2-nm-thick Al2O3 film. Data retention capability of our memory device of >48 h makes it a promising one for future nanoscale nonvolatile application. This conductive bridging resistive random access memory (CBRAM) device is forming free at a current compliance (CC) of 30 μA (even at a lowest CC of 0.1 μA) and operation voltage of ±3 V at a high resistance ratio of >10(4). PMID:26088986

  15. A new design procedure for all-optical photonic crystal logic gates and functions based on threshold logic

    NASA Astrophysics Data System (ADS)

    Sharifi, Hojjat; Hamidi, Seyyedeh Mehri; Navi, Keivan

    2016-07-01

    In this paper, a general method is proposed to design all-optical photonic crystal logic gates and functions based on threshold logic concept that have regular pattern in inputs. In our proposed structure, a photonic crystal junction is cascaded by a threshold power level detector. Additionally, a novel mechanism is introduced to shift the threshold power level for designing different logic gates and functions. The finite difference time domain and plane wave expansion methods are used to evaluate the proposed structures. The proposed gates and functions occupy an area less than 150 μm2 and also, the maximum power required for the switching mechanism is 15 μW. The inputs and output in the mentioned gates and functions are homogeneous and they can operate with a bit rate of about 500 Gbits/s.

  16. Two bit all-optical analog-to-digital converter based on nonlinear Kerr effect in 2D photonic crystals

    NASA Astrophysics Data System (ADS)

    Youssefi, Bahar; Moravvej-Farshi, Mohammad Kazem; Granpayeh, Nosrat

    2012-06-01

    We have demonstrated the performance of a novel design for a single wavelength 2-bit all-optical analog-to-digital converter (ADC). This converter consists of two high efficient channel drop filters with a coupled cavity-based wavelength selective reflector in a 2D photonic crystal with total length of 15.87 μm. The A/D conversion is achieved by using nonlinear Kerr effect in the cavities. The output ports switch to state '1' at different input power levels to generate unique states preferred for an ADC. This conversion is simulated by the finite difference time domain (FDTD) method for 5 different power levels. The proposed structure can function as a two-bit ADC with a 60 mW/μm input pulse and its maximum sampling rate is found to be ~ 45 GS/s.

  17. Fast, high-fidelity, all-optical and dynamically-controlled polarization gate using room-temperature atomic vapor

    SciTech Connect

    Li, Runbing; Zhu, Chengjie; Deng, L.; Hagley, E. W.

    2014-10-20

    We demonstrate a fast, all-optical polarization gate in a room-temperature atomic medium. Using a Polarization-Selective-Kerr-Phase-Shift (PSKPS) technique, we selectively write a π phase shift to one circularly-polarized component of a linearly-polarized input signal field. The output signal field maintains its original strength but acquires a 90° linear polarization rotation, demonstrating fast, high-fidelity, dynamically-controlled polarization gate operation. The intensity of the polarization-switching field used in this PKSPK-based polarization gate operation is only 2 mW/cm{sup 2}, which would be equivalent to 0.5 nW of light power (λ = 800 nm) confined in a typical commercial photonic hollow-core fiber. This development opens a realm of possibilities for potential future extremely low light level telecommunication and information processing systems.

  18. PAPR Reduction in All-optical OFDM Systems Based on Phase Pre-emphasis

    NASA Astrophysics Data System (ADS)

    He, Zhou; Li, Wei; Tao, Zhiyong; Shao, Ji ng; Liang, Xiaojun; Deng, Zhuanhua; Huang, Dexiu

    2011-02-01

    This paper investigates the peak-to-average power ratio (PAPR) theory in all-optical orthogonal frequency division multiplexing (OFDM) optical fibre communication systems. We find out that phase pre-emphasis could effectively reduce PAPR in all-optical OFDM communication systems which employ intensity modulation-direct detection (IM-DD) method. An equation is developed and proposed to calculate suitable phasing values for pre-emphasis. Furthermore, we find out that phase pre-emphasis cannot reduce PAPR effectively in all-optical OFDM systems that employ Phase Shift Keying (PSK) or Quadracture Amplitude Modulation (QAM) method.

  19. Colossal resistance switching effect in Pt/spinel-MgZnO/Pt devices for nonvolatile memory applications

    NASA Astrophysics Data System (ADS)

    Chen, Xinman; Wu, Guangheng; Jiang, Peng; Liu, Weifang; Bao, Dinghua

    2009-01-01

    We reported the discovery of colossal resistance switching effect in polycrystalline spinel-like structure MgZnO thin films with high Mg contents sandwiched by Pt electrodes. The ultrahigh resistance ratio of high resistance state to low resistance state of about seven to nine orders of magnitude with a low reset voltage of less than 1 V was obtained in this thin film system. The resistance ratio shows an increase of several orders of magnitude compared with those of previously reported resistance switching material systems including metal oxides, semiconductors, and organic molecules. This colossal resistance switching effect will greatly improve the signal-to-noise ratio and simplify the process of reading memory state for nonvolatile memory applications. Our study also provides a material base for studying the origin of resistance switching phenomenon.

  20. Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory

    NASA Astrophysics Data System (ADS)

    Ho Lee, Jong; Hwan Kim, Gun; Bae Ahn, Young; Woon Park, Ji; Wook Ryu, Seung; Seong Hwang, Cheol; Joon Kim, Hyeong

    2012-03-01

    Threshold-switching (TS) and selector performances of Si-As-Te thin films for crossbar resistive memory were studied. Composition of the film was the major factor determining the emergence of TS. On-state conduction was found to occur at localized regions. The change of threshold voltage and off-state current by varying composition was observed, which were explained by the change in the concentration of defects and generation efficiency of carriers. The serially connected TiO2 unipolar switching memory and Si-As-Te threshold switch showed the resistance switching of the memory layer with the leakage current lowered by ˜120 times at 0.5 V.