Science.gov

Sample records for all-optical switching device

  1. All-optical switching of magnetoresistive devices using telecom-band femtosecond laser

    SciTech Connect

    He, Li; Chen, Jun-Yang; Wang, Jian-Ping E-mail: moli@umn.edu; Li, Mo E-mail: moli@umn.edu

    2015-09-07

    Ultrafast all-optical switching of the magnetization of various magnetic systems is an intriguing phenomenon that can have tremendous impact on information storage and processing. Here, we demonstrate all-optical switching of GdFeCo alloy films using a telecom-band femtosecond fiber laser. We further fabricate Hall cross devices and electrically readout all-optical switching by measuring anomalous Hall voltage changes. The use of a telecom laser and the demonstrated all-optical switching of magnetoresistive devices represent the first step toward integration of opto-magnetic devices with mainstream photonic devices to enable novel optical and spintronic functionalities.

  2. All-optical switching of magnetoresistive devices using telecom-band femtosecond laser

    NASA Astrophysics Data System (ADS)

    He, Li; Chen, Jun-Yang; Wang, Jian-Ping; Li, Mo

    2015-09-01

    Ultrafast all-optical switching of the magnetization of various magnetic systems is an intriguing phenomenon that can have tremendous impact on information storage and processing. Here, we demonstrate all-optical switching of GdFeCo alloy films using a telecom-band femtosecond fiber laser. We further fabricate Hall cross devices and electrically readout all-optical switching by measuring anomalous Hall voltage changes. The use of a telecom laser and the demonstrated all-optical switching of magnetoresistive devices represent the first step toward integration of opto-magnetic devices with mainstream photonic devices to enable novel optical and spintronic functionalities.

  3. Materials and devices for all-optical helicity-dependent switching

    NASA Astrophysics Data System (ADS)

    Salah El Hadri, Mohammed; Hehn, Michel; Malinowski, Grégory; Mangin, Stéphane

    2017-04-01

    Since the first observation of ultrafast demagnetization in Ni thin films by Beaurepaire et al 20 years ago, understanding the interaction between ultrashort laser pulses and magnetization has become a topic of huge interest. In 2007, an intriguing discovery related to ultrafast demagnetization was the observation of all-optical switching (AOS) of magnetization in ferrimagnetic GdFeCo alloy films using only femtosecond laser pulses. This review discusses the recent studies elucidating several key issues regarding the all-optical switching phenomenon. Although AOS had long been restricted to GdFeCo alloys, it turned out to be a more general phenomenon for a variety of ferrimagnetic as well as ferromagnetic materials. This discovery helped pave the way for the integration of all-optical writing in data storage industries. Nevertheless, theoretical models explaining the switching in GdFeCo alloy films do not appear to apply in the other materials, thus questioning the uniqueness of the microscopic origin of all-optical switching. By investigating the integration of all-optical switching in spintronic devices, two types of all-optical switching mechanism have been distinguished: a single-pulse heat-only switching in ferrimagnetic GdFeCo alloys, and a two regime helicity-dependent switching in both ferrimagnetic TbCo alloys and ferromagnetic Co/Pt multilayers. Another key issue discussed in this review is the necessary condition for the observation of all-optical switching. Many models have been proposed but are strongly challenged by the discovery of such switching in ferromagnets. A comprehensive investigation of the magnetic parameters governing all-optical switching demonstrate that its observation requires magnetic domains larger than the laser spot size during the cooling process; such a criterion is common for both ferri- and ferro-magnets. These investigations strongly improve our understanding and give intriguing insights into the rich physics of the ultrafast

  4. Fast all-optical switch

    NASA Technical Reports Server (NTRS)

    Shay, Thomas M. (Inventor); Poliakov, Evgeni Y. (Inventor); Hazzard, David A. (Inventor)

    2001-01-01

    An apparatus and method wherein polarization rotation in alkali vapors or other mediums is used for all-optical switching and digital logic and where the rate of operation is proportional to the amplitude of the pump field. High rates of speed are accomplished by Rabi flopping of the atomic states using a continuously operating monochromatic atomic beam as the pump.

  5. Submicron bidirectional all-optical plasmonic switches

    PubMed Central

    Chen, Jianjun; Li, Zhi; Zhang, Xiang; Xiao, Jinghua; Gong, Qihuang

    2013-01-01

    Ultra-small all-optical switches are of importance in highly integrated optical communication and computing networks. However, the weak nonlinear light-matter interactions in natural materials present an enormous challenge to realize efficiently switching for the ultra-short interaction lengths. Here, we experimentally demonstrate a submicron bidirectional all-optical plasmonic switch with an asymmetric T-shape single slit. Sharp asymmetric spectra as well as significant field enhancements (about 18 times that in the conventional slit case) occur in the symmetry-breaking structure. Consequently, both of the surface plasmon polaritons propagating in the opposite directions on the metal surface are all-optically controlled inversely at the same time with the on/off switching ratios of >6 dB for the device lateral dimension of <1 μm. Moreover, in such a submicron structure, the coupling of free-space light and the on-chip bidirectional switching are integrated together. This submicron bidirectional all-optical switch may find important applications in the highly integrated plasmonic circuits. PMID:23486232

  6. Design of all-optical, hot-electron current-direction-switching device based on geometrical asymmetry.

    PubMed

    Kumarasinghe, Chathurangi S; Premaratne, Malin; Gunapala, Sarath D; Agrawal, Govind P

    2016-02-18

    We propose a nano-scale current-direction-switching device(CDSD) that operates based on the novel phenomenon of geometrical asymmetry between two hot-electron generating plasmonic nanostructures. The proposed device is easy to fabricate and economical to develop compared to most other existing designs. It also has the ability to function without external wiring in nano or molecular circuitry since it is powered and controlled optically. We consider a such CDSD made of two dissimilar nanorods separated by a thin but finite potential barrier and theoretically derive the frequency-dependent electron/current flow rate. Our analysis takes in to account the quantum dynamics of electrons inside the nanorods under a periodic optical perturbation that are confined by nanorod boundaries, modelled as finite cylindrical potential wells. The influence of design parameters, such as geometric difference between the two nanorods, their volumes and the barrier width on quality parameters such as frequency-sensitivity of the current flow direction, magnitude of the current flow, positive to negative current ratio, and the energy conversion efficiency is discussed by considering a device made of Ag/TiO2/Ag. Theoretical insight and design guidelines presented here are useful for customizing our proposed CDSD for applications such as self-powered logic gates, power supplies, and sensors.

  7. Design of all-optical, hot-electron current-direction-switching device based on geometrical asymmetry

    PubMed Central

    Kumarasinghe, Chathurangi S.; Premaratne, Malin; Gunapala, Sarath D.; Agrawal, Govind P.

    2016-01-01

    We propose a nano-scale current-direction-switching device(CDSD) that operates based on the novel phenomenon of geometrical asymmetry between two hot-electron generating plasmonic nanostructures. The proposed device is easy to fabricate and economical to develop compared to most other existing designs. It also has the ability to function without external wiring in nano or molecular circuitry since it is powered and controlled optically. We consider a such CDSD made of two dissimilar nanorods separated by a thin but finite potential barrier and theoretically derive the frequency-dependent electron/current flow rate. Our analysis takes in to account the quantum dynamics of electrons inside the nanorods under a periodic optical perturbation that are confined by nanorod boundaries, modelled as finite cylindrical potential wells. The influence of design parameters, such as geometric difference between the two nanorods, their volumes and the barrier width on quality parameters such as frequency-sensitivity of the current flow direction, magnitude of the current flow, positive to negative current ratio, and the energy conversion efficiency is discussed by considering a device made of Ag/TiO2/Ag. Theoretical insight and design guidelines presented here are useful for customizing our proposed CDSD for applications such as self-powered logic gates, power supplies, and sensors. PMID:26887286

  8. Design of all-optical, hot-electron current-direction-switching device based on geometrical asymmetry

    NASA Astrophysics Data System (ADS)

    Kumarasinghe, Chathurangi S.; Premaratne, Malin; Gunapala, Sarath D.; Agrawal, Govind P.

    2016-02-01

    We propose a nano-scale current-direction-switching device(CDSD) that operates based on the novel phenomenon of geometrical asymmetry between two hot-electron generating plasmonic nanostructures. The proposed device is easy to fabricate and economical to develop compared to most other existing designs. It also has the ability to function without external wiring in nano or molecular circuitry since it is powered and controlled optically. We consider a such CDSD made of two dissimilar nanorods separated by a thin but finite potential barrier and theoretically derive the frequency-dependent electron/current flow rate. Our analysis takes in to account the quantum dynamics of electrons inside the nanorods under a periodic optical perturbation that are confined by nanorod boundaries, modelled as finite cylindrical potential wells. The influence of design parameters, such as geometric difference between the two nanorods, their volumes and the barrier width on quality parameters such as frequency-sensitivity of the current flow direction, magnitude of the current flow, positive to negative current ratio, and the energy conversion efficiency is discussed by considering a device made of Ag/TiO2/Ag. Theoretical insight and design guidelines presented here are useful for customizing our proposed CDSD for applications such as self-powered logic gates, power supplies, and sensors.

  9. All-optical nonlinear plasmonic ring resonator switches

    NASA Astrophysics Data System (ADS)

    Nozhat, N.; Granpayeh, N.

    2014-11-01

    In this paper, all-optical nonlinear plasmonic ring resonator (PRR) switches containing 90o sharp and smooth bends have been proposed and numerically analyzed by the finite-difference time-domain method. Kerr nonlinear self-phase modulation (SPM) and cross-phase modulation (XPM) effects on the switching performance of the device have been studied. By applying a high-power lightwave, the signal can switch from one port to the other port due to the ON/OFF resonant states of the ring. We have shown that by utilizing the XPM effect, the output power ratio is improved by a factor of 2.5 and the required switching power is 31% of that of the case with only the SPM effect. Moreover, by utilizing sharp bend square-shaped ring resonators, the switching power is 10.4% lower than that of the smooth ones. The nonlinear PRR switches are suitable for application in photonic-integrated circuits as all-optical switches because of their nanoscale size and low required switching power.

  10. Progress towards interaction-free all-optical devices

    NASA Astrophysics Data System (ADS)

    Strekalov, Dmitry V.; Kowligy, Abijith S.; Huang, Yu-Ping; Kumar, Prem

    2014-06-01

    We present an all-optical control device in which coupling a weak control optical field into a high-Q lithium niobate whispering-gallery-mode microcavity decouples it from a signal field due to nonlinear optical interactions. This results in switching and modulation of the signal with low-power control pulses. In the quantum limit, the underlying nonlinear-optical process corresponds to the quantum Zeno blockade. Its "interaction-free" nature effectively alleviates loss and decoherence for the signal waves. This work therefore presents experimental progress towards acquiring large phase shifts with few photons or even at the single-photon level.

  11. Ultrafast all optical switching via tunable Fano interference.

    PubMed

    Wu, Jin-Hui; Gao, Jin-Yue; Xu, Ji-Hua; Silvestri, L; Artoni, M; La Rocca, G C; Bassani, F

    2005-07-29

    Tunneling induced quantum interference experienced by an incident probe in asymmetric double quantum wells can easily be modulated by means of an external control light beam. This phenomenon, which is here examined within the dressed-state picture, can be exploited to devise a novel all-optical ultrafast switch. For a suitably designed semiconductor heterostructure, the switch is found to exhibit frequency bandwidths of the order of 0.1 THz and response and recovery times of about 1 ps.

  12. All-optical switching in plant blue light photoreceptor phototropin.

    PubMed

    Roy, Sukhdev; Kulshrestha, Kapil

    2006-12-01

    We theoretically analyze all-optical switching in the recently characterized LOV2 domain from Avena sativa (oat) phot1 phototropin, a blue-light plant photoreceptor, based on nonlinear intensity-induced excited-state absorption. The transmission of a cw probe laser beam at 660 nm corresponding to the peak absorption of the first excited L-state, through the LOV2 sample, is switched by a pulsed pump laser beam at 442 nm that corresponds to the maximum initial D state absorption. The switching characteristics have been analyzed using the rate equation approach, considering all the three intermediate states and transitions in the LOV2 photocycle. It is shown that for a given pump pulse intensity, there is an optimum pump pulsewidth for which the switching contrast is maximum. It is shown that the probe laser beam can be completely switched off (100% modulation) by the pump laser beam at 50 kW/cm2 for a concentration of 1 mM with sample thickness of 5.5 mm. The switching characteristics are sensitive to various parameters such as concentration, rate constant of L-state, peak pump intensity and pump pulse width. At typical values, the switch-off and switch-on time is 1.6 and 22.3 micros, respectively. The switching characteristics have also been used to design all-optical NOT and the universal NOR and NAND logic gates.

  13. All-optical switching in Pharaonis phoborhodopsin protein molecules.

    PubMed

    Roy, Sukhdev; Kikukawa, Takashi; Sharma, Parag; Kamo, Naoki

    2006-09-01

    Low-power all-optical switching with pharaonis phoborhodopsin (ppR) protein is demonstrated based on nonlinear excited-state absorption at different wavelengths. A modulating pulsed 532-nm laser beam is shown to switch the transmission of a continuous-wave signal light beam at: 1) 390 nm; 2) 500 nm; 3) 560 nm; and 4) 600 nm, respectively. Simulations based on the rate equation approach considering all seven states in the ppR photocycle are in good agreement with experimental results. It is shown that the switching characteristics at 560 and 600 nm, respectively, can exhibit negative to positive switching. The switching characteristics at 500 nm can be inverted by increasing the signal beam intensity. The profile of switched signal beam is also sensitive to the modulating pulse frequency and signal beam intensity and wavelength. The switching characteristics are also shown to be sensitive to the lifetimes of ppR(M) and ppR(O) intermediates. The results show the applicability of ppR as a low-power wavelength tunable all-optical switch.

  14. All-optical high performance graphene-photonic crystal switch

    NASA Astrophysics Data System (ADS)

    Hoseini, Mehrdad; Malekmohammad, Mohammad

    2017-01-01

    The all-optical switch is realized based on nonlinear transmission changes in Fano resonance of 2D photonic crystals (PhC) which enhances the light intensity on the graphene in PhC; and in this study, the graphene layer is used as the nonlinear material. The refractive index change of graphene layer leads to a shift in the Fano resonance frequency due to the input light intensity through the Kerr nonlinear effect. Through finite-difference time-domain simulation, it is found that the high performance of all-optical switching can be achieved by the designed structure with a threshold pump intensity as low as MW/cm2. This structure is featured by optical bistability. The obtained results are applicable in micro optical integrated circuits for modulators, switches and logic elements for optical computation.

  15. Microscopic model for all optical switching in ferromagnets

    NASA Astrophysics Data System (ADS)

    Cornelissen, T. D.; Córdoba, R.; Koopmans, B.

    2016-04-01

    The microscopic mechanism behind the all optical switching (AOS) in ferromagnets has triggered intense scientific debate. Here, the microscopic three-temperature model is utilized to describe AOS in a perpendicularly magnetized ferromagnetic Co/Pt system. We demonstrate that AOS in such a ferromagnet can be explained with the Inverse Faraday Effect (IFE). The influence of the strength and lifetime of the IFE induced field pulse on the switching process are investigated. We found that because of strong spin-orbit coupling, the minimal lifetime of the IFE needed to obtain switching is of the order of 0.1 ps, which is shorter than previously assumed. Moreover, spatial images of the domain pattern after AOS in Co/Pt, as well as their dependence on applying an opposite magnetic field, are qualitatively reproduced.

  16. Recoil-induced Resonances as All-optical Switches

    NASA Astrophysics Data System (ADS)

    Narducci, F. A.; Desavage, S. A.; Gordon, K. H.; Duncan, D. L.; Welch, G. R.; Davis, J. P.

    2010-03-01

    We have measured recoil-induced resonances (RIR) [1,2] in our system of laser-cooled 85Rb atoms. Although this technique has been demonstrated to be useful for the purpose of extracting the cloud temperature [3], our aim was to demonstrate an all optical switch based on recoil-induced resonances. In addition to a very narrow ``free-space'' recoil-induced resonance of approximately 15 kHz, we also discovered a much broader resonance (˜30 MHz), caused by standing waves established by our trapping fields. We compare and contrast the switching dynamics of these two resonances and demonstrate optical switching using both resonances. Finally, we consider the applicability of the narrow, free-space resonance to the slowing of a weak probe field. [1] J. Guo, P.R. Berman, B. Dubetsky and G. Grynberg PRA, 46, 1426 (1992). [2] (a) P. Verkerk, B. Loumis, C. Salomon, C. Cohen-Tannoudji, J. Courtois PRL, 68, 3861 (1992). (b) G. Grynberg, J-Y Courtois, B. Lounis, P. Verkerk PRL, 72, 3017 (1994). [3] (a) T. Brzozowski, M. Brzozowska, J. Zachorowski, M. Zawada, W. Gawlik PRA, 71, 013401 (2005). (b) M. Brzozowska, T. Brzozowski J. Zachorowski, W. Gawlik PRA, 72, 061401(R), (2005).

  17. Quantum mechanical interpretation of the ultrafast all optical spin switching.

    PubMed

    Murakami, Mitsuko; Babyak, Zach; Giocolo, Michael; Zhang, G P

    2017-03-08

    The all-optical spin switching induced by an intense (∼TW cm(-2)), near-infrared (775 nm), ultrashort (∼100 fs) circularly-polarized laser pulse is studied based on the spin-orbit coupled Heisenberg model. We find that the magnetic spin momentum undergoes an oscillation in time during the interaction with a driving laser pulse, which can be explained as a classical counterpart of the Rabi oscillation associated with a spin-orbit coupling. The optimal spin reversal is achieved by adjusting the pulse duration to one half the Rabi oscillation period. A successive spin reversal by a delayed pulse is possible if it has the opposite helicity and a shorter duration relative to the first pulse. Moreover, inclusion of an exchange interaction term in the Hamiltonian leads to a precession of the magnetic spin momentum that lasts even after the driving laser pulse turns off. This spin precession is stronger in antiferromagnets than ferrimagnets.

  18. All optical logic operations using semiconductor optical amplifier based devices

    NASA Astrophysics Data System (ADS)

    Wang, Qiang

    High-speed optical processing technologies are essential for the construction of all-optical networks in the information era. In this Ph. D. thesis dissertation, essential mechanisms related to the semiconductor optical amplifier (SOA) based device such as the gain and phase dynamics when a short pulse in propagating inside SOA, and, all-optical Boolean function, XOR, AND and OR have been studied. In order to realize the all-optical logic using SOA, the nonlinear gain and phase dynamics in SOA need to be studied first. The experimental results of 10--90% gain recovery curve have been presented. The recovery time is related to the carrier lifetime of the SOA and it varies with gain compression and bias current. For pulse width of a few picosecond, intraband effects need to be considered. In the SOA, phase change is also induced when a short pulse is propagating inside SOA. Unlike the conventional way of estimating the phase shift using alpha factor, the maximum phase shift is obtained first, then the effective alpha factor is calculated. The experimental results of all optical Boolean function XOR and OR at 80 Gb/s are presented using SOA-MZI-DI and SOA-DI respectively. These are the highest operating speed that has been reported. The all optical AND operation at 40 Gb/s using SOA-MZI have also been reported here. The numerical simulation shows that the performance of these all-optical Boolean operations is limited by the carrier lifetime of the SOA. The Boolean functions are the first step towards all optical circuits. The designs of a parity checker and a pseudo-random binary sequence (PRBS) generator are demonstrated. The error analysis using quality factor and eye-diagram is also presented.

  19. Ultrafast, broadband, and configurable midinfrared all-optical switching in nonlinear graphene plasmonic waveguides

    NASA Astrophysics Data System (ADS)

    Ooi, Kelvin J. A.; Cheng, J. L.; Sipe, J. E.; Ang, L. K.; Tan, Dawn T. H.

    2016-07-01

    Graphene plasmonics provides a unique and excellent platform for nonlinear all-optical switching, owing to its high nonlinear conductivity and tight optical confinement. In this paper, we show that impressive switching performance on graphene plasmonic waveguides could be obtained for both phase and extinction modulations at sub-MW/cm2 optical pump intensities. Additionally, we find that the large surface-induced nonlinearity enhancement that comes from the tight confinement effect can potentially drive the propagating plasmon pump power down to the pW range. The graphene plasmonic waveguides have highly configurable Fermi-levels through electrostatic-gating, allowing for versatility in device design and a broadband optical response. The high capabilities of nonlinear graphene plasmonics would eventually pave the way for the adoption of the graphene plasmonics platform in future all-optical nanocircuitry.

  20. Ultrafast all-optical switching with photonic nanojets and semiconductor nanoparticles

    NASA Astrophysics Data System (ADS)

    Born, Brandon; Krupa, Jeffrey D. A.; Geoffroy-Gagnon, Simon; Holzman, Jonathan F.

    2016-03-01

    The potential of terabit-per-second fibre optics can be unlocked with emerging all-optical networks and processors employing all-optical switching. To be effective, all-optical switching must support operations with femtojoule switching energies and femtosecond switching times. With this in mind, this work studies geometrical and material characteristics for all-optical switching and develops a new all-optical switching architecture. A nanojet focal geometry is applied, in the form of dielectric spheres, to direct high-intensity photonic nanojets into peripheral semiconductors. Theoretical and experimental analyses demonstrate photonic nanojets, enabling femtojoule switching energies through localized photoinjection, and semiconductor nanoparticles, enabling femtosecond switching times through localized recombination.

  1. Software Defined Networking (SDN) controlled all optical switching networks with multi-dimensional switching architecture

    NASA Astrophysics Data System (ADS)

    Zhao, Yongli; Ji, Yuefeng; Zhang, Jie; Li, Hui; Xiong, Qianjin; Qiu, Shaofeng

    2014-08-01

    Ultrahigh throughout capacity requirement is challenging the current optical switching nodes with the fast development of data center networks. Pbit/s level all optical switching networks need to be deployed soon, which will cause the high complexity of node architecture. How to control the future network and node equipment together will become a new problem. An enhanced Software Defined Networking (eSDN) control architecture is proposed in the paper, which consists of Provider NOX (P-NOX) and Node NOX (N-NOX). With the cooperation of P-NOX and N-NOX, the flexible control of the entire network can be achieved. All optical switching network testbed has been experimentally demonstrated with efficient control of enhanced Software Defined Networking (eSDN). Pbit/s level all optical switching nodes in the testbed are implemented based on multi-dimensional switching architecture, i.e. multi-level and multi-planar. Due to the space and cost limitation, each optical switching node is only equipped with four input line boxes and four output line boxes respectively. Experimental results are given to verify the performance of our proposed control and switching architecture.

  2. All-Optical Switching of Magnetic Tunnel Junctions with Single Subpicosecond Laser Pulses

    NASA Astrophysics Data System (ADS)

    Chen, Jun-Yang; He, Li; Wang, Jian-Ping; Li, Mo

    2017-02-01

    The magnetic tunnel junction (MTJ) is one of the most important building blocks of spintronic logic and memory components for beyond-CMOS computation and communication. Although switching of MTJs without magnetic field has been achieved by charge and spin current injection, the operation speed is limited fundamentally by the spin-precession time to many picoseconds. We report the demonstration of ultrafast all-optical switching of an MTJ using single subpicosecond infrared laser pulses. This optically switchable MTJ uses ferrimagnetic Gd(Fe,Co) as the free layer and its switching is read out by measuring its tunneling magnetoresistance with a Δ R /R ratio of 0.6%. A switching repetition rate at MHz has been demonstrated, but the fundamental upper limit should be higher than tens of GHz rate. This result represents an important step toward integrated optospintronic devices that combines spintronics and photonics technologies to enable ultrafast conversion between fundamental information carriers of electron spins and photons.

  3. All-optical switch using optically controlled two mode interference coupler.

    PubMed

    Sahu, Partha Pratim

    2012-05-10

    In this paper, we have introduced optically controlled two-mode interference (OTMI) coupler having silicon core and GaAsInP cladding as an all-optical switch. By taking advantage of refractive index modulation by launching optical pulse into cladding region of TMI waveguide, we have shown optically controlled switching operation. We have studied optical pulse-controlled coupling characteristics of the proposed device by using a simple mathematical model on the basis of sinusoidal modes. The device length is less than that of previous work. It is also seen that the cross talk of the OTMI switch is not significantly increased with fabrication tolerances (±δw) in comparison with previous work.

  4. Electrical characterization of all-optical helicity-dependent switching in ferromagnetic Hall crosses

    NASA Astrophysics Data System (ADS)

    El Hadri, M. S.; Pirro, P.; Lambert, C.-H.; Bergeard, N.; Petit-Watelot, S.; Hehn, M.; Malinowski, G.; Montaigne, F.; Quessab, Y.; Medapalli, R.; Fullerton, E. E.; Mangin, S.

    2016-02-01

    We present an experimental study of all-optical helicity-dependent switching (AO-HDS) of ferromagnetic Pt/Co/Pt heterostructures with perpendicular magnetic anisotropy. The sample is patterned into a Hall cross and the AO-HDS is measured via the anomalous Hall effect. This all-electrical probing of the magnetization during AO-HDS enables a statistical quantification of the switching ratio for different laser parameters, such as the threshold power to achieve AO-HDS and the exposure time needed to reach complete switching at a given laser power. We find that the AO-HDS is a cumulative process, a certain number of optical pulses is needed to obtain a full and reproducible helicity-dependent switching. The deterministic switching of the ferromagnetic Pt/Co/Pt Hall cross provides a full "opto-spintronic device," where the remanent magnetization can be all-optically and reproducibly written and erased without the need of an external magnetic field.

  5. All-optical switching in silicon-on-insulator photonic wire nano-cavities.

    PubMed

    Belotti, Michele; Galli, Matteo; Gerace, Dario; Andreani, Lucio Claudio; Guizzetti, Giorgio; Md Zain, Ahmad R; Johnson, Nigel P; Sorel, Marc; De La Rue, Richard M

    2010-01-18

    We report on experimental demonstration of all-optical switching in a silicon-on-insulator photonic wire nanocavity operating at telecom wavelengths. The switching is performed with a control pulse energy as low as approximately 0.1 pJ on a cavity device that presents very high signal transmission, an ultra-high quality-factor, almost diffraction-limited modal volume and a footprint of only 5 microm(2). High-speed modulation of the cavity mode is achieved by means of optical injection of free carriers using a nanosecond pulsed laser. Experimental results are interpreted by means of finite-difference time-domain simulations. The possibility of using this device as a logic gate is also demonstrated.

  6. High bandwidth all-optical 3×3 switch based on multimode interference structures

    NASA Astrophysics Data System (ADS)

    Le, Duy-Tien; Truong, Cao-Dung; Le, Trung-Thanh

    2017-03-01

    A high bandwidth all-optical 3×3 switch based on general interference multimode interference (GI-MMI) structure is proposed in this study. Two 3×3 multimode interference couplers are cascaded to realize an all-optical switch operating at both wavelengths of 1550 nm and 1310 nm. Two nonlinear directional couplers at two outer-arms of the structure are used as all-optical phase shifters to achieve all switching states and to control the switching states. Analytical expressions for switching operation using the transfer matrix method are presented. The beam propagation method (BPM) is used to design and optimize the whole structure. The optimal design of the all-optical phase shifters and 3×3 MMI couplers are carried out to reduce the switching power and loss.

  7. An All-Optical Picosecond Switch in Polydiacetylene

    NASA Technical Reports Server (NTRS)

    Abdeldayem, Hossin; Frazier, Donald O.; Paley, Mark S.

    2002-01-01

    Polydiacetylene derivative of 2-methyl-4-nitroaniline (PDAMNA) showed a picosecond switching property. This phenomenon was demonstrated by wave guiding a cw He-Ne laser collinearly with a mode-locked picosecond Nd:YAG laser at 532 nm through a hollow fiber coated on the inside with a thin film of PDAMNA. The z-scan investigations of PDAMNA thin film revealed that the PDAMNA system is a three level system and the switching is caused by excited state absorption of the He-Ne beam.

  8. On the size-dependent magnetism and all-optical magnetization switching of transition-metal silicide nanostructures

    SciTech Connect

    Glushkov, G. I.; Tuchin, A. V.; Popov, S. V.; Bityutskaya, L. A.

    2015-12-15

    Theoretical investigations of the electronic structure, synthesis, and all-optical magnetization switching of transition-metal silicide nanostructures are reported. The magnetic moment of the nanostructures is studied as a function of the silicide cluster size and configuration. The experimentally demonstrated magnetization switching of nanostructured nickel silicide by circularly polarized light makes it possible to create high-speed storage devices with high density data recording.

  9. Integration of photonic nanojets and semiconductor nanoparticles for enhanced all-optical switching

    PubMed Central

    Born, Brandon; Krupa, Jeffrey D. A.; Geoffroy-Gagnon, Simon; Holzman, Jonathan F.

    2015-01-01

    All-optical switching is the foundation of emerging all-optical (terabit-per-second) networks and processors. All-optical switching has attracted considerable attention, but it must ultimately support operation with femtojoule switching energies and femtosecond switching times to be effective. Here we introduce an all-optical switch architecture in the form of a dielectric sphere that focuses a high-intensity photonic nanojet into a peripheral coating of semiconductor nanoparticles. Milli-scale spheres coated with Si and SiC nanoparticles yield switching energies of 200 and 100 fJ with switching times of 10 ps and 350 fs, respectively. Micro-scale spheres coated with Si and SiC nanoparticles yield switching energies of 1 pJ and 20 fJ with switching times of 2 ps and 270 fs, respectively. We show that femtojoule switching energies are enabled by localized photoinjection from the photonic nanojets and that femtosecond switching times are enabled by localized recombination within the semiconductor nanoparticles. PMID:26314911

  10. Integration of photonic nanojets and semiconductor nanoparticles for enhanced all-optical switching

    NASA Astrophysics Data System (ADS)

    Born, Brandon; Krupa, Jeffrey D. A.; Geoffroy-Gagnon, Simon; Holzman, Jonathan F.

    2015-08-01

    All-optical switching is the foundation of emerging all-optical (terabit-per-second) networks and processors. All-optical switching has attracted considerable attention, but it must ultimately support operation with femtojoule switching energies and femtosecond switching times to be effective. Here we introduce an all-optical switch architecture in the form of a dielectric sphere that focuses a high-intensity photonic nanojet into a peripheral coating of semiconductor nanoparticles. Milli-scale spheres coated with Si and SiC nanoparticles yield switching energies of 200 and 100 fJ with switching times of 10 ps and 350 fs, respectively. Micro-scale spheres coated with Si and SiC nanoparticles yield switching energies of 1 pJ and 20 fJ with switching times of 2 ps and 270 fs, respectively. We show that femtojoule switching energies are enabled by localized photoinjection from the photonic nanojets and that femtosecond switching times are enabled by localized recombination within the semiconductor nanoparticles.

  11. Integration of photonic nanojets and semiconductor nanoparticles for enhanced all-optical switching.

    PubMed

    Born, Brandon; Krupa, Jeffrey D A; Geoffroy-Gagnon, Simon; Holzman, Jonathan F

    2015-08-28

    All-optical switching is the foundation of emerging all-optical (terabit-per-second) networks and processors. All-optical switching has attracted considerable attention, but it must ultimately support operation with femtojoule switching energies and femtosecond switching times to be effective. Here we introduce an all-optical switch architecture in the form of a dielectric sphere that focuses a high-intensity photonic nanojet into a peripheral coating of semiconductor nanoparticles. Milli-scale spheres coated with Si and SiC nanoparticles yield switching energies of 200 and 100 fJ with switching times of 10 ps and 350 fs, respectively. Micro-scale spheres coated with Si and SiC nanoparticles yield switching energies of 1 pJ and 20 fJ with switching times of 2 ps and 270 fs, respectively. We show that femtojoule switching energies are enabled by localized photoinjection from the photonic nanojets and that femtosecond switching times are enabled by localized recombination within the semiconductor nanoparticles.

  12. Novel all-optical switches based on traveling-wave semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Zhu, Xiaoxing

    1997-08-01

    In this work, novel all-optical switches, which can provide both high-speed and broad-bandwidth switching simultaneously for future telecommunication networks, have been proposed and demonstrated in traveling-wave semiconductor optical amplifiers (TW-SOA). The design, fabrication and characterization of anti- reflection coating for TW-SOA were presented. Guided mode approach was used to optimize the coating conditions. High quality TW-SOA were fabricated with 21 dB small- signal gain, 0.2 dB gain ripple and 5× 10-5 residual reflectivity. The study showed careful selection of the laser wavelength was necessary in order to match the amplifier's operating wavelength. A new class of an all-optical packet switch-the wavelength recognizing switch (WRS)-was proposed. The device uses a control signal to sense the wavelength of the input data packet and taps the packet to the appropriate output port. The underlying mechanism is nearly-degenerate four-wave mixing (FWM). The implementation of the WRS in a broad-area TW-SOA provided +8.2 dB switching efficiency, -28.8 dB crosstalk and 32.9 dB signal-to-noise ratio. The switching bandwidth was 42 nm, while the recognition bandwidth was 0.03 A. Completely filter-free FWM wavelength conversion was also proposed and demonstrated for the first time. The noncollinear configuration provided 29 dB suppression of the straight-through converter beam from the converted signal. Further suppression of the strong pump beam from the converted signal was realized by using an orthogonal polarization technique, with isolation ratio of 19.2 dB achieved. A high conversion efficiency of 4.9 dB, together with a wide efficiency bandwidth of 40 nm and a large signal-to-noise ratio of 28 dB was obtained. Important material parameters were investigated for the optimization of devices' performance. Ambipolar diffusion coefficient of 8.0 cm2/s and carrier lifetime of 1.33 ns were directly measured. The diffusion coefficient decreased as the current

  13. Two types of all-optical magnetization switching mechanisms using femtosecond laser pulses

    NASA Astrophysics Data System (ADS)

    El Hadri, M. S.; Pirro, P.; Lambert, C.-H.; Petit-Watelot, S.; Quessab, Y.; Hehn, M.; Montaigne, F.; Malinowski, G.; Mangin, S.

    2016-08-01

    Using a time-dependent electrical investigation of the all-optical switching in ferrimagnetic and ferromagnetic Hall crosses via the anomalous Hall effect, intriguing insights into the rich physics underlying the all-optical switching are provided. We demonstrate that two different all-optical magnetization switching mechanisms can be distinguished; a "single pulse" switching for ferrimagnetic GdFeCo alloys, and a "two regimes" switching process for both ferrimagnetic TbCo alloys and ferromagnetic Pt/Co multilayers. We show that the latter takes place at two different time scales, and consists of a steplike helicity-independent multiple-domain formation within the first 1 ms followed by a helicity-dependent remagnetization on several tens of milliseconds.

  14. All-optical switching structure based on a photonic crystal directional coupler

    NASA Astrophysics Data System (ADS)

    Cuesta-Soto, F.; Martínez, A.; García, J.; Ramos, F.; Sanchis, P.; Blasco, J.; Martí, J.

    2004-01-01

    A novel all-optical switching structure based on a photonic crystal directional coupler is proposed and analyzed. Efficient optical switching is achieved by modifying the refractive index of the coupling region between the coupled waveguides by means of an optical control signal that is confined in the central region. Small length (around 1.1 mm) and low optical power consumption (over 1.5 W) are the main features estimated for this switching structure.

  15. Ultrafast defect dynamics: A new approach to all optical broadband switching employing amorphous selenium thin films

    SciTech Connect

    Sharma, Rituraj; Adarsh, K. V. E-mail: adarsh@iiserb.ac.in; Prasai, Kiran; Drabold, D. A. E-mail: adarsh@iiserb.ac.in

    2015-07-15

    Optical switches offer higher switching speeds than electronics, however, in most cases utilizing the interband transitions of the active medium for switching. As a result, the signal suffers heavy losses. In this article, we demonstrate a simple and yet efficient ultrafast broadband all-optical switching on ps timescale in the sub-bandgap region of the a-Se thin film, where the intrinsic absorption is very weak. The optical switching is attributed to short-lived transient defects that form localized states in the bandgap and possess a large electron-phonon coupling. We model these processes through first principles simulation that are in agreement with the experiments.

  16. Field trial of 160 Gb/s all-optical packet switching

    NASA Astrophysics Data System (ADS)

    Liu, Y.; Herrera, J.; Raz, O.; Tangdiongga, E.; Marti, J.; Ramos, F.; Maxwell, G.; Poustie, A.; Mulvad, H. C. H.; Hill, M. T.; de Waardt, H.; Khoe, G. D.; Koonen, A. M. J.; Dorren, H. J. S.

    2007-11-01

    We present the results of a transmission experiment, over 110 km of field installed fiber, for an all-optical 160 Gb/s packet switching system. The system uses in-band optical labels which are processed entirely in the optical domain using a narrow-band all-optical filter. The label decision information is stored by an optical flip-flop, which output controls a high-speed wavelength converter based on ultra-fast cross-phase modulation in a single semiconductor optical amplifier. The packet switched node is located in between two different fiber sections, each having a length of 54.3-km. The field installed fibers are located around the city of Eindhoven in the Netherlands. The results show how the all-optical switch can effectively route the packets based on the optical information and that such packets may be transmitted across the fiber with an acceptable penalty level.

  17. All-optical D and T flip-flops based on polarization switch of SOA

    NASA Astrophysics Data System (ADS)

    Wang, Lina; Wang, Yongjun; Wu, Chen

    2016-11-01

    The semiconductor optical amplifier (SOA) plays an important role in the development of the all-optical signal processing because of the advantages of simple structure, easy integration and strong non-linearity. Especially the nonlinear polarization rotation effect of SOA is receiving considerable interest by many researchers nowadays. The all-optical flip-flop using the properties of SOA also obtains widespread attention by researchers, as all-optical flip-flop is an important part in the field of all-optical signal processing. In this paper, a new all-optical flip-flop structure using polarization switch (PSW) based on polarization rotation effect of SOA is presented. The main work of the paper is the simulation of all-optical logic gates and optical SR latch. The logic gate setup only uses one SOA, but it can get two different logic gates through a simulation. The extinction ratio of the logic gate is about 30dB. The structure of optical SR latch utilizes the two coupled polarization rotation switch of SOA. The structure of the flip-flop is based on these two parts. To demonstrate the feasibility of the structure, we analyze two types of flip-flops, including all-optical D and T flip-flops, whose clock pulse repetition rate is 1GHz with the pulse width of 0.3ns. The quality of all-optical flip-flop in this paper is measured by the falling and rising edge time. In the simulation, the falling edge time is about 50ps, while the rising edge time is higher than the falling edge time, because the gain increases slowly to the recovery time after the decrease of the gain of SOA. The results are useful for the development of all-optical flip-flop based on SOA.

  18. Ultrafast all-optical switching based on indium gallium arsenic phosphide grown by helium plasma-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Qian, Li

    We present the first experimental study of the optical properties of HELP InGaAsP (InGaAsP grown by He-plasma- assisted molecular beam epitaxy) relevant to all-optical switching, and the first demonstration of picosecond switching using this material. We observed an optical response time of 15 ps, a nonlinear index change as large as 0.077, a sharp absorption band edge, and a small absorption tail in HELP InGaAsP. The unique coexistence of ultrafast response, large interband nonlinearity, and small band-tail absorption, never before reported, makes HELP InGaAsP particularly suitable for ultrafast all-optical switching. Additionally, faster response (subpicosecond) was achieved by doping the material with beryllium, and moderate doping (up to ~1018 cm-3) did not significantly alter the absorption edge. We systematically studied the response time variations with doping concentration, annealing temperature, carrier density, and wavelength. We conclude that, (a)Be doping reduces the response time by compensating for donor-like mid-gap states, thus increasing the electron trap concentration; (b)annealing removes defects responsible for fast carrier trapping; (c)the response time increases with carrier density due to limited trap states; (d)the response time varies with wavelength due to difference in electron and hole trapping cross-sections, which were determined based on experimental results and a phenomenological two-trap- level rate equation model. We investigated two types of HELP-InGaAsP-based all- optical switching devices, the nonlinear directional coupler (NLDC) and the asymmetric Fabry-Pérot (AFP) switch. Based on numerical modelling and waveguide loss measurements, we conclude that, while HELP-InGaAsP-based passive NLDCs are in principle viable, practical devices will tend to require high switching energy, and will likely experience low contrast and high insertion loss. We demonstrated that AFP devices will outperform NLDCs in contrast ratio, throughput

  19. Ultrafast All-Optical Switching with Magnetic Resonances in Nonlinear Dielectric Nanostructures.

    PubMed

    Shcherbakov, Maxim R; Vabishchevich, Polina P; Shorokhov, Alexander S; Chong, Katie E; Choi, Duk-Yong; Staude, Isabelle; Miroshnichenko, Andrey E; Neshev, Dragomir N; Fedyanin, Andrey A; Kivshar, Yuri S

    2015-10-14

    We demonstrate experimentally ultrafast all-optical switching in subwavelength nonlinear dielectric nanostructures exhibiting localized magnetic Mie resonances. We employ amorphous silicon nanodisks to achieve strong self-modulation of femtosecond pulses with a depth of 60% at picojoule-per-disk pump energies. In the pump-probe measurements, we reveal that switching in the nanodisks can be governed by pulse-limited 65 fs-long two-photon absorption being enhanced by a factor of 80 with respect to the unstructured silicon film. We also show that undesirable free-carrier effects can be suppressed by a proper spectral positioning of the magnetic resonance, making such a structure the fastest all-optical switch operating at the nanoscale.

  20. Applications of highly nonlinear chalcogenide glass fibers in ultrafast all-optical switches

    SciTech Connect

    Asobe, Masaki ); Kanamori, Terutoshi ); Kubodera, Ken'ichi )

    1993-08-01

    The authors report applications of chalcogenide glass fibers in ultrafast all-optical switches. The switching performance is studied with optical Kerr shutter experiments and through calculation analysis taking the effect of group velocity dispersion and two-photon absorption into account. The nonlinear refractive index of the As[sub 2]S[sub 3]-based glass is estimated to be n[sub 2] = 4.0 [times] 10[sup [minus]14](sm[sup 2]/W), which is higher by two orders of magnitude than silica glass fiber. They also discuss the capabilities of low power switching.

  1. Realization of All-Optical Multistate Switching in an Atomic Coherent Medium

    NASA Astrophysics Data System (ADS)

    Sheng, Jiteng; Khadka, Utsab; Xiao, Min

    2012-11-01

    We have experimentally observed optical multistability (OM) in an optical ring cavity containing three-level Λ-type Doppler-broadened rubidium atoms. The shape of the OM curve can be significantly modified by changing the power of the control laser field. An all-optical multistate switching or coding element is realized and flexibly controlled by adding a pulse sequence to the input (probe) intensity.

  2. All optical contention detection and resolution for asynchronous variable length optical packets switching

    NASA Astrophysics Data System (ADS)

    Farhat, Rim; Farhat, Amel; Menif, Mourad

    2016-04-01

    We proposed a novel 2×2 all optical packet switching router architecture supporting asynchronous, labelled and variablelength packet. A proof of concept through Matlab Simulink simulation is validated. Then we discussed the three possible scenarios to demonstrate the contention resolution technique based on deflection routing. We have showing that the contending packet is detected and forwarded according FIFO (First In First Out) strategy to another output.

  3. Realization of all-optical switch and diode via Raman gain process using a Kerr field

    NASA Astrophysics Data System (ADS)

    Abbas, Muqaddar; Qamar, Sajid; Qamar, Shahid

    2016-08-01

    The idea of optical photonic crystal, which is generated using two counter-propagating fields, is revisited to study gain-assisted all-optical switch and diode using Kerr field. Two counter-propagating fields with relative detuning Δ ν generate standing-wave field pattern which interacts with a four-level atomic system. The standing-wave field pattern acts like a static photonic crystal for Δ ν =0 , however, it behaves as a moving photonic crystal for Δ ν \

  4. A novel method of developing all-optical frequency encoded memory unit exploiting nonlinear switching character of semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Kumar Garai, Sisir; Mukhopadhyay, Sourangshu

    2010-10-01

    The very fast running optical memory and optical logic gates are the basic building blocks for any optical computing data processing system. Realization of a very fast memory-cell in the optical domain is very challenging. In the last two decades many methods of implementing all-optical flip-flops have been proposed. Most of these suffer from speed limitation because of low switching response of the active devices. In our present communication the authors propose a method of developing a frequency encoded memory unit based on the switching action of semiconductor optical amplifier (SOA). Nonlinear polarization rotation characters of SOA and 'SOA based Mach-Zehnder Interferometer' switch, i.e. 'SOA-MZI' switch, are exploited for the purpose of some switching action with least switching power (<-3 dB m) and high switching contrast ratio (20 dB). Here two logic states ('0' state and '1' state) of the memory is encoded by two different frequencies, which will remain unchanged throughout the data communication irrespective of loss of light energy due to reflection, refraction, attenuation, etc. Though the SOA based switch runs with the operational speed 100 Gb/s, still due to the presence of the other optical components in the memory unit, the overall speed of the proposed system will come down to 10 Gb/s.

  5. Quantum optics. All-optical routing of single photons by a one-atom switch controlled by a single photon.

    PubMed

    Shomroni, Itay; Rosenblum, Serge; Lovsky, Yulia; Bechler, Orel; Guendelman, Gabriel; Dayan, Barak

    2014-08-22

    The prospect of quantum networks, in which quantum information is carried by single photons in photonic circuits, has long been the driving force behind the effort to achieve all-optical routing of single photons. We realized a single-photon-activated switch capable of routing a photon from any of its two inputs to any of its two outputs. Our device is based on a single atom coupled to a fiber-coupled, chip-based microresonator. A single reflected control photon toggles the switch from high reflection (R ~ 65%) to high transmission (T ~ 90%), with an average of ~1.5 control photons per switching event (~3, including linear losses). No additional control fields are required. The control and target photons are both in-fiber and practically identical, making this scheme compatible with scalable architectures for quantum information processing.

  6. A low-power all-optical bistable device based on a liquid crystal layer embedded in thin gold films

    NASA Astrophysics Data System (ADS)

    Takase, Yuki; Tien Thanh, Pham; Fujimura, Ryushi; Kajikawa, Kotaro

    2014-04-01

    An all-optical bistable (AOB) resonator device composed of a 430-nm-thick liquid crystal (LC) layer embedded in two thin gold films (MLM) is reported in this paper. This device allows the use of the incident illumination at normal incidence, whereas the previous AOB devices based on twisted nematic (TN)-LC function only for illumination at oblique incidence. The fastest switching time was measured to be 1.8 ms, which is significantly faster than that of TN-LC. Because the MLM device operates free from electronic circuits, it is promising for two-dimensional optical data processing, random access optical memories, and spatial light modulators.

  7. Nanoscale sub-100 picosecond all-optical magnetization switching in GdFeCo microstructures.

    PubMed

    Le Guyader, L; Savoini, M; El Moussaoui, S; Buzzi, M; Tsukamoto, A; Itoh, A; Kirilyuk, A; Rasing, T; Kimel, A V; Nolting, F

    2015-01-12

    Ultrafast magnetization reversal driven by femtosecond laser pulses has been shown to be a promising way to write information. Seeking to improve the recording density has raised intriguing fundamental questions about the feasibility of combining ultrafast temporal resolution with sub-wavelength spatial resolution for magnetic recording. Here we report on the experimental demonstration of nanoscale sub-100 ps all-optical magnetization switching, providing a path to sub-wavelength magnetic recording. Using computational methods, we reveal the feasibility of nanoscale magnetic switching even for an unfocused laser pulse. This effect is achieved by structuring the sample such that the laser pulse, via both refraction and interference, focuses onto a localized region of the structure, the position of which can be controlled by the structural design. Time-resolved photo-emission electron microscopy studies reveal that nanoscale magnetic switching employing such focusing can be pushed to the sub-100 ps regime.

  8. Efficient all-optical switch using a {Lambda} atom in a cavity QED system

    SciTech Connect

    Nielsen, Anne E. B.; Kerckhoff, Joseph

    2011-10-15

    We propose an all-optical switch constructed from a two-mode optical resonator containing a strongly coupled, three-state system. The coupling allows a weak, continuous wave laser drive to incoherently control the transmission of a much stronger, continuous wave signal laser into (and through) the resonator. We demonstrate that in this simple setup the presence of a control drive with 1/10th the power of the signal drive can induce near complete reflection of the signal, while its absence allows for near complete transmission. The switch can also be operated as a set-reset relay with two control inputs that efficiently drive the switch into either the reflecting or the transmitting state.

  9. All-optical scanhead for ultrasound and photoacoustic imaging—Imaging mode switching by dichroic filtering☆

    PubMed Central

    Hsieh, Bao-Yu; Chen, Sung-Liang; Ling, Tao; Guo, L. Jay; Li, Pai-Chi

    2014-01-01

    Ultrasound (US) and photoacoustic (PA) multimodality imaging has the advantage of combining good acoustic resolution with high optical contrast. The use of an all-optical scanhead for both imaging modalities can simplify integration of the two systems and miniaturize the imaging scanhead. Herein we propose and demonstrate an all-optical US/PA scanhead using a thin plate for optoacoustic generation in US imaging, a polymer microring resonator for acoustic detection, and a dichroic filter to switch between the two imaging modes by changing the laser wavelength. A synthetic-aperture focusing technique is used to improve the resolution and contrast. Phantom images demonstrate the feasibility of this design, and show that axial and lateral resolutions of 125 μm and 2.52°, respectively, are possible. PMID:25302154

  10. All-optical switching in an open V-type atomic system

    NASA Astrophysics Data System (ADS)

    Jafarzadeh, H.

    2017-02-01

    In this paper, the optical bistability (OB) and absorption properties of a weak probe field in an open V-type three-level atomic system have been investigated. We found that the OB threshold could be reduced via spontaneously generated coherence (SGC), coherent and incoherent pump fields, atomic injection, and exit rates. We also found that the threshold intensity of OB in an open system was less than that in the closed system. The all-optical switching due to the OB has also been discussed.

  11. All-optical packet header and payload separation for un-slotted optical packet switched networks

    NASA Astrophysics Data System (ADS)

    Ji, Wei; Zhang, Min; Ye, Peida

    2005-11-01

    A novel all-optical header and payload separation technique that can be utilized in un-slotted optical packet switched networks is presented. The technique uses a modified TOAD for packet header extraction with differential modulation scheme and two SOAs that perform a simple XOR operation between the packet and its self-derived header to get the separated payload. The main virtue of this system is simple structure and need not any additional continuous pulses. Through numerical simulations, the operating characteristics of the scheme are illustrated. In addition, the parameters of the system are discussed and designed to optimize the operation performance.

  12. All-optical devices realized by the post-growth processing of multiquantum-well structures

    NASA Astrophysics Data System (ADS)

    LiKamWa, Patrick; Kan'an, Ayman M.; Dutta, Mitra; Pamulapati, Jagadeesh

    1997-01-01

    An inexpensive and reliable process for the area-selective disordering of MQW structures is reported. The method relies on the diffusion, by rapid thermal annealing, of surface vacancies into the quantum wells thereby intermixing the Ga and Al atoms between the wells and barriers. A silicon oxide cap that is formed by curing a spun-on solution of glass forming compound acts as porous layer that enhances the formation of surface vacancies by allowing out-diffusion of Ga and Al atoms. This technique has been applied to the fabrication of two integrated optical devices. One is the nonlinear zero-gap directional coupler with disordered input and output branching waveguides, and the other is the symmetric nonlinear integrated Mach-Zehnder interferometer with one arm containing a non-intermixed MQW section. In both devices, the mechanism for the switching is the nonlinear refractive index that is caused by photo-generated carriers. Since this mechanism entails absorption of some of the pump beam, it is hence very important that the optical absorption be confined to the active sections only. Selective area disordering is shown to be very effective at defining regions of different bandgap energies. Hence it can be ensured that the energy of the pump laser beam is too low in comparison to the bandgap energy of the passive regions to be absorbed and the free carriers are only created in the non-intermixed active sections. The devices investigated using a pump-probe setup, exhibited strong all-optical switching behavior with a contrast ratio of better than 7:1. The controlled selective area intermixing of MQW structures will potentially play a significant role in the advancement of photonic integrated circuits.

  13. 25th anniversary article: Design of polymethine dyes for all-optical switching applications: guidance from theoretical and computational studies.

    PubMed

    Gieseking, Rebecca L; Mukhopadhyay, Sukrit; Risko, Chad; Marder, Seth R; Brédas, Jean-Luc

    2014-01-08

    All-optical switching--controlling light with light--has the potential to meet the ever-increasing demand for data transmission bandwidth. The development of organic π-conjugated molecular materials with the requisite properties for all-optical switching applications has long proven to be a significant challenge. However, recent advances demonstrate that polymethine dyes have the potential to meet the necessary requirements. In this review, we explore the theoretical underpinnings that guide the design of π-conjugated materials for all-optical switching applications. We underline, from a computational chemistry standpoint, the relationships among chemical structure, electronic structure, and optical properties that make polymethines such promising materials.

  14. All-optical switching in a continuously operated and strongly coupled atom-cavity system

    NASA Astrophysics Data System (ADS)

    Dutta, Sourav; Rangwala, S. A.

    2017-03-01

    We experimentally demonstrate collective strong coupling, optical bi-stability (OB), and all-optical switching in a system consisting of ultracold 85Rb atoms, trapped in a dark magneto-optical trap (DMOT), and coupled to an optical Fabry-Perot cavity. The strong coupling is established by measuring the vacuum Rabi splitting (VRS) of a weak on-axis probe beam. The dependence of VRS on the probe beam power is measured, and bi-stability in the cavity transmission is observed. We demonstrate control over the transmission of the probe beam through the atom-cavity system using a free-space off-axis control beam and show that the cavity transmission can be switched on and off in micro-second timescales using micro-Watt control powers. The utility of the system as a tool for sensitive, in-situ and rapid measurements is envisaged.

  15. Integrated all-optical logic and arithmetic operations with the help of a TOAD-based interferometer device--alternative approach.

    PubMed

    Roy, Jitendra Nath; Gayen, Dilip Kumar

    2007-08-01

    Interferometric devices have drawn a great interest in all-optical signal processing for their high-speed photonic activity. The nonlinear optical loop mirror provides a major support to optical switching based all-optical logic and algebraic operations. The gate based on the terahertz optical asymmetric demultiplexer (TOAD) has added new momentum in this field. Optical tree architecture (OTA) plays a significant role in the optical interconnecting network. We have tried to exploit the advantages of both OTA- and TOAD-based switches. We have proposed a TOAD-based tree architecture, a new and alternative scheme, for integrated all-optical logic and arithmetic operations.

  16. Integrated all-optical logic and arithmetic operations with the help of a TOAD-based interferometer device--alternative approach

    NASA Astrophysics Data System (ADS)

    Nath Roy, Jitendra; Gayen, Dilip Kumar

    2007-08-01

    Interferometric devices have drawn a great interest in all-optical signal processing for their high-speed photonic activity. The nonlinear optical loop mirror provides a major support to optical switching based all-optical logic and algebraic operations. The gate based on the terahertz optical asymmetric demultiplexer (TOAD) has added new momentum in this field. Optical tree architecture (OTA) plays a significant role in the optical interconnecting network. We have tried to exploit the advantages of both OTA- and TOAD-based switches. We have proposed a TOAD-based tree architecture, a new and alternative scheme, for integrated all-optical logic and arithmetic operations.

  17. Ultrasmall all-optical plasmonic switch and its application to superresolution imaging

    PubMed Central

    Wu, Hsueh-Yu; Huang, Yen-Ta; Shen, Po-Ting; Lee, Hsuan; Oketani, Ryosuke; Yonemaru, Yasuo; Yamanaka, Masahito; Shoji, Satoru; Lin, Kung-Hsuan; Chang, Chih-Wei; Kawata, Satoshi; Fujita, Katsumasa; Chu, Shi-Wei

    2016-01-01

    Because of their exceptional local-field enhancement and ultrasmall mode volume, plasmonic components can integrate photonics and electronics at nanoscale, and active control of plasmons is the key. However, all-optical modulation of plasmonic response with nanometer mode volume and unity modulation depth is still lacking. Here we show that scattering from a plasmonic nanoparticle, whose volume is smaller than 0.001 μm3, can be optically switched off with less than 100 μW power. Over 80% modulation depth is observed, and shows no degradation after repetitive switching. The spectral bandwidth approaches 100 nm. The underlying mechanism is suggested to be photothermal effects, and the effective single-particle nonlinearity reaches nearly 10−9 m2/W, which is to our knowledge the largest record of metallic materials to date. As a novel application, the non-bleaching and unlimitedly switchable scattering is used to enhance optical resolution to λ/5 (λ/9 after deconvolution), with 100-fold less intensity requirement compared to similar superresolution techniques. Our work not only opens up a new field of ultrasmall all-optical control based on scattering from a single nanoparticle, but also facilitates superresolution imaging for long-term observation. PMID:27063920

  18. Engineered materials for all-optical helicity-dependent magnetic switching

    NASA Astrophysics Data System (ADS)

    Fullerton, Eric

    2014-03-01

    The possibilities of manipulating magnetization without applied magnetic fields have attracted growing attention over the last fifteen years. The low-power manipulation of magnetization, preferably at ultra-short time scales, has become a fundamental challenge with implications for future magnetic information memory and storage technologies. Here we explore the optical manipulation of the magnetization of engineered materials and devices using 100 fs optical pulses. We demonstrate that all optical - helicity dependent switching (AO-HDS) can be observed not only in selected rare-earth transition-metal (RE-TM) alloy films but also in a much broader variety of materials, including alloys, multilayers, heterostructures and RE-free Co-Ir-based synthetic ferrimagnets. The discovery of AO-HDS in RE-free TM-based synthetic ferrimagnets can enable breakthroughs for numerous applications since it exploits materials that are currently used in magnetic data storage, memories and logic technologies. In addition, this materials study of AO-HDS offers valuable insight into the underlying mechanisms involved. Indeed the common denominator of the diverse structures showing AO-HDS in this study is that two ferromagnetic sub-lattices exhibit magnetization compensation (and therefore angular momentum compensation) at temperatures near or above room temperature. We are highlighting that compensation plays a major role and that this compensation can be established at the atomic level as in alloys but also over a larger nanometers scale as in the multilayers or in heterostructures. We will also discuss the potential to extend AO-HDS to new classes of magnetic materials. This work was done in collaboration with S. Mangin, M. Gottwald, C-H. Lambert, D. Steil, V. Uhlíř, L. Pang, M. Hehn, S. Alebrand, M. Cinchetti, G. Malinowski, Y. Fainman, and M. Aeschlimann. Supported by the ANR-10-BLANC-1005 ``Friends,'' a grant from the Advanced Storage Technology Consortium, Partner University Fund

  19. Coherent all-optical switching by resonant quantum-dot distributions in photonic band-gap waveguides

    NASA Astrophysics Data System (ADS)

    Vujic, Dragan; John, Sajeev

    2007-12-01

    We study the detailed propagative characteristics of optical pulses in photonic band-gap (PBG) waveguides, coupled near resonantly to inhomogeneously broadened distributions of quantum dots. The line centers of the quantum-dot (QD) distributions are placed near a sharp discontinuity in the local electromagnetic density of states. Using finite-difference time-domain (FDTD) simulations of optical pulse dynamics and independent QD susceptibilities associated with resonance fluorescence, we demonstrate subpicosecond switching from pulse absorption to pulse amplification using steady-state optical holding and gate fields with power levels on the order of 1 milliwatt. In the case of collective response of QDs within the periodic dielectric microstructure, the gate power level is reduced to 200 microwatt for room temperature operation. In principle, this enables 200 Gbits per second optical information processing at wavelengths near 1.5 microns in various wavelength channels. The allowed pulse bandwidth in a given waveguide channel exceeds 0.5 THz allowing switching of subpicosecond laser pulses without pulse distortion. The switching contrast from absorption to gain is governed by the QD oscillator strength and dipole dephasing time scale. We consider dephasing time scales ranging from nanoseconds (low-temperature operation) to one picosecond (room-temperature operation). This all-optical transistor action is based on simple Markovian models of single-dot and collective-dot inversion and switching by coherent resonant pumping near the photon density of states discontinuity. The structured electromagnetic vacuum is provided by two-mode waveguide architectures in which one waveguide mode has a cutoff that occurs, with very large Purcell factor, near the QDs resonance, while the other waveguide mode exhibits nearly linear dispersion for fast optical propagation and modulation. Unlike optical switching based on Kerr nonlinearities in an optical cavity resonator, switching

  20. Engineered materials for all-optical helicity-dependent magnetic switching

    NASA Astrophysics Data System (ADS)

    Mangin, S.; Gottwald, M.; Lambert, C.-H.; Steil, D.; Uhlíř, V.; Pang, L.; Hehn, M.; Alebrand, S.; Cinchetti, M.; Malinowski, G.; Fainman, Y.; Aeschlimann, M.; Fullerton, E. E.

    2014-03-01

    The possibility of manipulating magnetic systems without applied magnetic fields have attracted growing attention over the past fifteen years. The low-power manipulation of the magnetization, preferably at ultrashort timescales, has become a fundamental challenge with implications for future magnetic information memory and storage technologies. Here we explore the optical manipulation of the magnetization in engineered magnetic materials. We demonstrate that all-optical helicity-dependent switching (AO-HDS) can be observed not only in selected rare earth-transition metal (RE-TM) alloy films but also in a much broader variety of materials, including RE-TM alloys, multilayers and heterostructures. We further show that RE-free Co-Ir-based synthetic ferrimagnetic heterostructures designed to mimic the magnetic properties of RE-TM alloys also exhibit AO-HDS. These results challenge present theories of AO-HDS and provide a pathway to engineering materials for future applications based on all-optical control of magnetic order.

  1. All-optical switching via four-wave mixing Bragg scattering in a silicon platform

    NASA Astrophysics Data System (ADS)

    Zhao, Yun; Lombardo, David; Mathews, Jay; Agha, Imad

    2017-02-01

    We employ the process of non-degenerate four-wave mixing Bragg scattering to demonstrate all-optical control in a silicon platform. In our configuration, a strong, non-information-carrying pump is mixed with a weak control pump and an input signal in a silicon-on-insulator waveguide. Through the optical nonlinearity of this highly confining waveguide, the weak pump controls the wavelength conversion process from the signal to an idler, leading to a controlled depletion of the signal. The strong pump, on the other hand, plays the role of a constant bias. In this work, we show experimentally that it is possible to implement this low-power switching technique as a first step towards universal optical logic gates, and test the performance with random binary data. Even at very low powers, where the signal and control pump levels are almost equal, the eye-diagrams remain open, indicating a successful operation of the logic gates.

  2. Nonlinear interference effects and all-optical switching in optically dense inhomogeneously broadened media

    SciTech Connect

    Popov, A.K.; Myslivets, S.A.; George, Thomas F.

    2005-04-01

    Specific features of nonlinear interference processes at quantum transitions in near- and fully resonant Doppler-broadened optically dense media are studied. The possibility of all-optical switching of the medium to opaque or, alternatively, to absolutely transparent, or even to strongly amplifying states is explored, which is controlled by a small variation of two driving or probe radiations and does not require any change of the level populations. Optimum conditions for inversionless amplification of short-wavelength radiation above the oscillation threshold at the expense of the longer-wavelength control fields are investigated. The feasibility of overcoming the fundamental limitation on a velocity-interval of resonantly coupled molecules imposed by the Doppler effect is shown, based on quantum coherence.

  3. Burst switching without guard interval in all-optical software-define star intra-data center network

    NASA Astrophysics Data System (ADS)

    Ji, Philip N.; Wang, Ting

    2014-02-01

    Optical switching has been introduced in intra-data center networks (DCNs) to increase capacity and to reduce power consumption. Recently we proposed a star MIMO OFDM-based all-optical DCN with burst switching and software-defined networking. Here, we introduce the control procedure for the star DCN in detail for the first time. The timing, signaling, and operation are described for each step to achieve efficient bandwidth resource utilization. Furthermore, the guidelines for the burst assembling period selection that allows burst switching without guard interval are discussed. The star all-optical DCN offers flexible and efficient control for next-generation data center application.

  4. Low threshold all-optical crossbar switch on GaAs-GaAlAs channel waveguide arrays

    NASA Astrophysics Data System (ADS)

    Jannson, Tomasz; Kostrzewski, Andrew

    1994-09-01

    During the Phase 2 project entitled 'Low Threshold All-Optical Crossbar Switch on GaAs - GaAlAs Channel Waveguide Array,' Physical Optics Corporation (POC) developed the basic principles for the fabrication of all-optical crossbar switches. Based on this development. POC fabricated a 2 x 2 GaAs/GaAlAs switch that changes the direction of incident light with minimum insertion loss and nonlinear distortion. This unique technology can be used in both analog and digital networks. The applications of this technology are widespread. Because the all-optical network does not have any speed limitations (RC time constant), POC's approach will be beneficial to SONET networks, phased array radar networks, very high speed oscilloscopes, all-optical networks, IR countermeasure systems, BER equipment, and the fast growing video conferencing network market. The novel all-optical crossbar switch developed in this program will solve interconnect problems. and will be a key component in the widely proposed all-optical 200 Gb/s SONET/ATM networks.

  5. All-optical cross-bar network architecture using TOAD based interferometric switch and designing of reconfigurable logic unit

    NASA Astrophysics Data System (ADS)

    Chattopadhyay, Tanay

    2011-12-01

    The design of all-optical 2 × 2 Terahertz Optical Asymmetric Demultiplexer (TOAD) based interferometric switch is proposed and described in this manuscript. Numerical simulation has been done to achieve the performance of the switch. Using this 2 × 2 TOAD based switch, cross-bar network architecture is designed. A reconfigurable logic unit is also proposed in this manuscript, which can perform 16-Boolean logical operations.

  6. Silicon Photonics: All-Optical Devices for Linear and Nonlinear Applications

    NASA Astrophysics Data System (ADS)

    Driscoll, Jeffrey B.

    Silicon photonics has grown rapidly since the first Si electro-optic switch was demonstrated in 1987, and the field has never grown more quickly than it has over the past decade, fueled by milestone achievements in semiconductor processing technologies for low loss waveguides, high-speed Si modulators, Si lasers, Si detectors, and an enormous toolbox of passive and active integrated devices. Silicon photonics is now on the verge of major commercialization breakthroughs, and optical communication links remain the force driving integrated and Si photonics towards the first commercial telecom and datacom transceivers; however other potential and future applications are becoming uncovered and refined as researchers reveal the benefits of manipulating photons on the nanoscale. This thesis documents an exploration into the unique guided-wave and nonlinear properties of deeply-scaled high-index-contrast sub-wavelength Si waveguides. It is found that the tight confinement inherent to single-mode channel waveguides on the silicon-on-insulator platform lead to a rich physics, which can be leveraged for new devices extending well beyond simple passive interconnects and electro-optic devices. The following chapters will concentrate, in detail, on a number of unique physical features of Si waveguides and extend these attributes towards new and interesting devices. Linear optical properties and nonlinear optical properties are investigated, both of which are strongly affected by tight optical confinement of the guided waveguide modes. As will be shown, tight optical confinement directly results in strongly vectoral modal components, where the electric and magnetic fields of the guided modes extend into all spatial dimensions, even along the axis of propagation. In fact, the longitudinal electric and magnetic field components can be just as strong as the transverse fields, directly affecting the modal group velocity and energy transport properties since the longitudinal fields

  7. Numerical investigation of high-contrast ultrafast all-optical switching in low-refractive-index polymeric photonic crystal nanobeam microcavities

    NASA Astrophysics Data System (ADS)

    Meng, Zi-Ming; Zhong, Xiao-Lan; Wang, Chen; Li, Zhi-Yuan

    2012-06-01

    With the development of micro- or nano-fabrication technologies, great interest has been aroused in exploiting photonic crystal nanobeam structures. In this article the design of high-quality-factor (Q) polymeric photonic crystal nanobeam microcavities suitable for realizing ultrafast all-optical switching is presented based on the three-dimensional finite-difference time-domain method. Adopting the pump-probe technique, the ultrafast dynamic response of the all-optical switching in a nanobeam microcavity with a quality factor of 1000 and modal volume of 1.22 (λ/n)3 is numerically studied and a switching time as fast as 3.6 picoseconds is obtained. Our results indicate the great promise of applying photonic crystal nanobeam microcavities to construct integrated ultrafast tunable photonic devices or circuits incorporating polymer materials with large Kerr nonlinearity and ultrafast response speed.

  8. REMOTE CONTROLLED SWITCHING DEVICE

    DOEpatents

    Hobbs, J.C.

    1959-02-01

    An electrical switching device which can be remotely controlled and in which one or more switches may be accurately operated at predetermined times or with predetermined intervening time intervals is described. The switching device consists essentially of a deck, a post projecting from the deck at right angles thereto, cam means mounted for rotation around said posts and a switch connected to said deck and actuated by said cam means. Means is provided for rotating the cam means at a constant speed and the switching apparatus is enclosed in a sealed container with external adjusting means and electrical connection elements.

  9. Photonic Switching Devices Using Light Bullets

    NASA Technical Reports Server (NTRS)

    Goorjian, Peter M. (Inventor)

    1997-01-01

    The present invention is directed toward a unique ultra-fast, all-optical switching device or switch made with readily available, relatively inexpensive, highly nonlinear photonic glasses. These photonic glasses have a sufficiently negative group velocity dispersion and high nonlinear index of refraction to support stable light bullets. The light bullets counterpropagate through, and interact within the waveguide to selectively change each others' directions of propagation into predetermined channels. In one embodiment, the switch utilizes a rectangularly planar slab waveguide, and further includes two central channels and a plurality of lateral channels for guiding the light bullets into and out of the waveguide. One advantage presented by the present all-optical switching device lies in its practical use of light bullets, thus preventing the degeneration of the pulses due to dispersion and diffraction at the front and back of the pulses. Another feature of the switching device is the relative insensitivity of the collision process to the time difference in which the counter-propagating pulses enter the waveguide. since. contrary to conventional co-propagating spatial solitons, the relative phase of the colliding pulses does not affect the interaction of these pulses. Yet another feature of the present all-optical switching device is the selection of the light pulse parameters which enables the generation of light bullets in highly nonlinear glasses.

  10. All-optical switching with bacteriorhodopsin protein coated microcavities and its application to low power computing circuits

    NASA Astrophysics Data System (ADS)

    Roy, Sukhdev; Prasad, Mohit; Topolancik, Juraj; Vollmer, Frank

    2010-03-01

    We show all-optical switching of an input infrared laser beam at 1310 nm by controlling the photoinduced retinal isomerization to tune the resonances in a silica microsphere coated with three bacteriorhodopsin (BR) protein monolayers. The all-optical tunable resonant coupler re-routes the infrared beam between two tapered fibers in 50 μs using a low power (<200 μW) green (532 nm) and blue (405 nm) pump beams. The basic switching configuration has been used to design all-optical computing circuits, namely, half and full adder/subtractor, de-multiplexer, multiplexer, and an arithmetic unit. The design requires 2n-1 switches to realize n bit computation. The designs combine the exceptional sensitivities of BR and high-Q microcavities and the versatile tree architecture for realizing low power circuits and networks (approximately mW power budget). The combined advantages of high Q-factor, tunability, compactness, and low power control signals, with the flexibility of cascading switches to form circuits, and reversibility and reconfigurability to realize arithmetic and logic functions, makes the designs promising for practical applications. The designs are general and can be implemented (i) in both fiber-optic and integrated optic formats, (ii) with any other coated photosensitive material, or (iii) any externally controlled microresonator switch.

  11. An all-optical switch and third-order optical nonlinearity of 3,4-pyridinediamine

    NASA Astrophysics Data System (ADS)

    Badran, Hussain A.; Abul-Hail, Riyadh Ch.; Shaker, Hussain S.; musa, Abdulameer I.; Hassan, Qusay M. A.

    2017-01-01

    We investigated the third-order nonlinear optical properties of 3,4-pyridinediamine solution. The nonlinear measurements were taken by using single-beam Z-scan technique with cw laser at 473 nm. The effect of varying glucose concentration in a sample solution has been studied. The experimental results show that the nonlinear refractive index, n 2, and nonlinear absorption coefficient, β, are strongly dependent on the glucose concentration in a sample solution. The optical limiting properties are measured by a transmission technique. We find that the limiting threshold can be improved by a proper choice of glucose concentration in sample solution. A 3,4-pyridinediamine with 80 mmol glucose concentration showed a good switching property. This phenomenon was demonstrated by waveguiding a transistor-transistor logic modulated cw 473 nm laser beam as an excitation beam modulated at 10 Hz frequency collinearly with a continuous-wave SDL-635-100T laser beam of wavelength 653 nm through a quartz cuvette of thickness 1 mm. The results of pump-probe experiments show that the time of switch-on and switch-off of the 3,4-pyridinediamine was in μs for the pump intensity. The energy-dependent transmission studies also reveal better limiting property of the sample compound at nanosecond regime. Also, thermo-optic coefficients have been determined by thermal lens (TL) technique (-9.54 × 10-5 K-1) and it was found to be temperature dependent. This value was compared with result obtained by Z-scan calculations (-7.46 × 10-5 K-1). Thus, the nonlinear response of the material suggests that it has a potential application for high-sensitive photonic devices.

  12. General Strategy for Broadband Coherent Perfect Absorption and Multi-wavelength All-optical Switching Based on Epsilon-Near-Zero Multilayer Films

    PubMed Central

    Kim, Tae Young; Badsha, Md. Alamgir; Yoon, Junho; Lee, Seon Young; Jun, Young Chul; Hwangbo, Chang Kwon

    2016-01-01

    We propose a general, easy-to-implement scheme for broadband coherent perfect absorption (CPA) using epsilon-near-zero (ENZ) multilayer films. Specifically, we employ indium tin oxide (ITO) as a tunable ENZ material, and theoretically investigate CPA in the near-infrared region. We first derive general CPA conditions using the scattering matrix and the admittance matching methods. Then, by combining these two methods, we extract analytic expressions for all relevant parameters for CPA. Based on this theoretical framework, we proceed to study ENZ CPA in a single layer ITO film and apply it to all-optical switching. Finally, using an ITO multilayer of different ENZ wavelengths, we implement broadband ENZ CPA structures and investigate multi-wavelength all-optical switching in the technologically important telecommunication window. In our design, the admittance matching diagram was employed to graphically extract not only the structural parameters (the film thicknesses and incident angles), but also the input beam parameters (the irradiance ratio and phase difference between two input beams). We find that the multi-wavelength all-optical switching in our broadband ENZ CPA system can be fully controlled by the phase difference between two input beams. The simple but general design principles and analyses in this work can be widely used in various thin-film devices. PMID:26965195

  13. General Strategy for Broadband Coherent Perfect Absorption and Multi-wavelength All-optical Switching Based on Epsilon-Near-Zero Multilayer Films

    NASA Astrophysics Data System (ADS)

    Kim, Tae Young; Badsha, Md. Alamgir; Yoon, Junho; Lee, Seon Young; Jun, Young Chul; Hwangbo, Chang Kwon

    2016-03-01

    We propose a general, easy-to-implement scheme for broadband coherent perfect absorption (CPA) using epsilon-near-zero (ENZ) multilayer films. Specifically, we employ indium tin oxide (ITO) as a tunable ENZ material, and theoretically investigate CPA in the near-infrared region. We first derive general CPA conditions using the scattering matrix and the admittance matching methods. Then, by combining these two methods, we extract analytic expressions for all relevant parameters for CPA. Based on this theoretical framework, we proceed to study ENZ CPA in a single layer ITO film and apply it to all-optical switching. Finally, using an ITO multilayer of different ENZ wavelengths, we implement broadband ENZ CPA structures and investigate multi-wavelength all-optical switching in the technologically important telecommunication window. In our design, the admittance matching diagram was employed to graphically extract not only the structural parameters (the film thicknesses and incident angles), but also the input beam parameters (the irradiance ratio and phase difference between two input beams). We find that the multi-wavelength all-optical switching in our broadband ENZ CPA system can be fully controlled by the phase difference between two input beams. The simple but general design principles and analyses in this work can be widely used in various thin-film devices.

  14. Optimization of the input losses in fiber-optic communications with an acousto-optic all-optical switch.

    PubMed

    Danilyan, A V; Shulgin, V A; Chernov, V E

    2006-06-20

    We study optical losses in the single-mode fiber system with an all-optical switch based on the anisotropic acousto-optic (AO) TeO(2) 2D deflector. It is shown, theoretically and experimentally, that the mismatch of the output-fiber mode profile and the switched optical beam shape depends significantly on the monochromaticity of the light beam and is determined by the frequency dispersion of the laser beam diffracted on a Bragg AO cell. A quantitative analysis of the dependence of the input optical losses on the spectral width of the light beam is presented.

  15. Multi-function all optical packet switch by periodic wavelength arrangement in an arrayed waveguide grating and wideband optical filters.

    PubMed

    Feng, Kai-Ming; Wu, Chung-Yu; Wen, Yu-Hsiang

    2012-01-16

    By utilizing the cyclic filtering function of an NxN arrayed waveguide grating (AWG), we propose and experimentally demonstrate a novel multi-function all optical packet switching (OPS) architecture by applying a periodical wavelength arrangement between the AWG in the optical routing/buffering unit and a set of wideband optical filters in the switched output ports to achieve the desired routing and buffering functions. The proposed OPS employs only one tunable wavelength converter at the input port to convert the input wavelength to a designated wavelength which reduces the number of active optical components and thus the complexity of the traffic control is simplified in the OPS. With the proposed OPS architecture, multiple optical packet switching functions, including arbitrary packet switching and buffering, first-in-first-out (FIFO) packet multiplexing, packet demultiplexing and packet add/drop multiplexing, have been successfully demonstrated.

  16. Role of electron and phonon temperatures in the helicity-independent all-optical switching of GdFeCo

    NASA Astrophysics Data System (ADS)

    Gorchon, J.; Wilson, R. B.; Yang, Y.; Pattabi, A.; Chen, J. Y.; He, L.; Wang, J. P.; Li, M.; Bokor, J.

    2016-11-01

    Ultrafast optical heating of the electrons in ferrimagnetic metals can result in all-optical switching (AOS) of the magnetization. Here we report quantitative measurements of the temperature rise of GdFeCo thin films during helicity-independent AOS. Critical switching fluences are obtained as a function of the initial temperature of the sample and for laser pulse durations from 55 fs to 15 ps. We conclude that nonequilibrium phenomena are necessary for helicity-independent AOS, although the peak electron temperature does not play a critical role. Pump-probe time-resolved experiments show that the switching time increases as the pulse duration increases, with 10 ps pulses resulting in switching times of ˜13 ps. These results raise new questions about the fundamental mechanism of helicity-independent AOS.

  17. All-optical SR flip-flop based on SOA-MZI switches monolithically integrated on a generic InP platform

    NASA Astrophysics Data System (ADS)

    Pitris, St.; Vagionas, Ch.; Kanellos, G. T.; Kisacik, R.; Tekin, T.; Broeke, R.; Pleros, N.

    2016-03-01

    At the dawning of the exaflop era, High Performance Computers are foreseen to exploit integrated all-optical elements, to overcome the speed limitations imposed by electronic counterparts. Drawing from the well-known Memory Wall limitation, imposing a performance gap between processor and memory speeds, research has focused on developing ultra-fast latching devices and all-optical memory elements capable of delivering buffering and switching functionalities at unprecedented bit-rates. Following the master-slave configuration of electronic Flip-Flops, coupled SOA-MZI based switches have been theoretically investigated to exceed 40 Gb/s operation, provided a short coupling waveguide. However, this flip-flop architecture has been only hybridly integrated with silica-on-silicon integration technology exhibiting a total footprint of 45x12 mm2 and intra-Flip-Flop coupling waveguide of 2.5cm, limited at 5 Gb/s operation. Monolithic integration offers the possibility to fabricate multiple active and passive photonic components on a single chip at a close proximity towards, bearing promises for fast all-optical memories. Here, we present for the first time a monolithically integrated all-optical SR Flip-Flop with coupled master-slave SOA-MZI switches. The photonic chip is integrated on a 6x2 mm2 die as a part of a multi-project wafer run using library based components of a generic InP platform, fiber-pigtailed and fully packaged on a temperature controlled ceramic submount module with electrical contacts. The intra Flip-Flop coupling waveguide is 5 mm long, reducing the total footprint by two orders of magnitude. Successful flip flop functionality is evaluated at 10 Gb/s with clear open eye diagram, achieving error free operation with a power penalty of 4dB.

  18. Long-range surface-plasmon-enhanced all-optical switching and beam steering through nonlinear Kerr effect

    NASA Astrophysics Data System (ADS)

    Kar, Aparupa; Goswami, Nabamita; Saha, Ardhendu

    2017-01-01

    A proposition toward all-optical tuning of long-range surface-plasmon-enhanced beam shifts and all-optical switching is implemented analytically by exploitation of Kerr effect induced refractive index change through varying pump light intensity in a multilayer long-range surface-plasmon configuration at 1550 nm. Through the optimized design comprising polydiacetylene para-toulene sulfonate as a Kerr polymer, a high-contrast all-optical switch with a pump intensity threshold of 0.15 GW/cm2 is proposed. The design also provides giant spatial and angular Goos-Hänchen and Imbert-Fedorov shifts at mm and µrad ranges along with wide range of tunability of beam shifts with the varying pump light intensity and the varying incident angle. Moreover, exact beam position and beam steering considering the conjoint effect of spatial and angular Goos-Hänchen and Imbert-Fedorov shifts for different incident polarizations are also obtained. This idea proffers a new possibility for pulse generation, optical sensors applications, optical modulation, geodetic surveying, etc.

  19. All-optical absorption switches in subwavelength metal-dielectricmetal plasmonic waveguides

    NASA Astrophysics Data System (ADS)

    Min, Changjun; Veronis, Georgios

    2009-08-01

    We theoretically investigate the properties of absorption switches for metal-dielectric-metal (MDM) plasmonic waveguides. We show that a MDM waveguide directly coupled to a cavity filled with an active material with tunable absorption coefficient can act as an absorption switch, in which the on/off states correspond to the absence/presence of optical pumping. We also show that a MDM plasmonic waveguide side-coupled to a cavity filled with an active material can operate as an absorption switch, in which the on/off states correspond to the presence/absence of pumping. For a specific modulation depth, the side-coupled-cavity switch results in more compact designs compared to the directcoupled- cavity switch. Variations in the imaginary part of the refractive index of the material filling the cavity of Δκ=0.01 (Δκ=0.15) result in ~60% (~99%) modulation depth. The properties of both switches can be accurately described using transmission line theory.

  20. Ultrafast all-optical switching using signal flow graph for PANDA resonator.

    PubMed

    Bahadoran, Mahdi; Ali, Jalil; Yupapin, Preecha P

    2013-04-20

    In this paper, the bifurcation behavior of light in the PANDA ring resonator is investigated using the signal flow graph (SFG) method, where the optical transfer function for the through and drop ports of the PANDA Vernier system are derived. The optical nonlinear phenomena, such as bistability, Ikeda instability, and dynamics of light in the silicon-on-insulator (SOI) PANDA ring resonator with four couplers are studied. The transmission curves for bistability and instability as a function of the resonant mode numbers and coupling coefficients for the coupler are derived by the SFG method and simulated. The proposed system has an advantage as no optical pumping component is required. Simulated results show that closed-loop bistable switching can be generated and achieved by varying mode resonant numbers in the SOI-PANDA Vernier resonator, where a smooth and closed-loop bistable switching with low relative output/input power can be obtained and realized. The minimum through-port switching time of 1.1 ps for resonant mode numbers of 5;4;4 and minimum drop port switching time of 1.96 ps for resonant mode numbers of 9;7;7 of the PANDA Vernier resonator are achieved, which makes the PANDA Vernier resonator an operative component for optical applications, such as optical signal processing and a fast switching key in photonics integrated circuits.

  1. Low-Power All-Optical Bistable Device of Twisted-Nematic Liquid Crystal Based on Surface Plasmons in a Metal-Insulator-Metal Structure

    NASA Astrophysics Data System (ADS)

    Tien Thanh, Pham; Tanaka, Daisuke; Fujimura, Ryushi; Takanishi, Yoichi; Kajikawa, Kotaro

    2013-01-01

    A low-power all-optical bistable device of twisted-nematic liquid crystal (TN-LC) is reported, on the basis of coupled surface plasmons (SPs) in a metal-insulator-metal (MIM) structure. The lowest threshold switching illumination was 0.3 mW/mm2, which is much lower than the value we previously reported for a similar all-optical TN-LC device based on the coupled SPs in a gold grating. The threshold illumination is lower at higher temperature up to the phase transition. The TN-LC device is promising for two-dimensional optical memories or spatial light modulators, since the structure is simple and free from electronic circuits.

  2. Photonic Switching Devices Using Light Bullets

    NASA Technical Reports Server (NTRS)

    Goorjian, Peter M. (Inventor)

    1999-01-01

    A unique ultra-fast, all-optical switching device or switch is made with readily available, relatively inexpensive, highly nonlinear optical materials. which includes highly nonlinear optical glasses, semiconductor crystals and/or multiple quantum well semiconductor materials. At the specified wavelengths. these optical materials have a sufficiently negative group velocity dispersion and high nonlinear index of refraction to support stable light bullets. The light bullets counter-propagate through, and interact within the waveguide to selectively change each others' directions of propagation into predetermined channels. In one embodiment, the switch utilizes a rectangularly planar slab waveguide. and further includes two central channels and a plurality of lateral channels for guiding the light bullets into and out of the waveguide. An advantage of the present all-optical switching device lies in its practical use of light bullets, thus preventing the degeneration of the pulses due to dispersion and diffraction at the front and back of the pulses. Another advantage of the switching device is the relative insensitivity of the collision process to the time difference in which the counter-propagating pulses enter the waveguide. since. contrary to conventional co-propagating spatial solitons, the relative phase of the colliding pulses does not affect the interaction of these pulses. Yet another feature of the present all-optical switching device is the selection of the light pulse parameters which enables the generation of light bullets in nonlinear optical materials. including highly nonlinear optical glasses and semiconductor materials such as semiconductor crystals and/or multiple quantum well semiconductor materials.

  3. All-optical packet header and payload separation based on two TOADs for optical packet switched networks

    NASA Astrophysics Data System (ADS)

    Ji, Wei; Zhang, Min; Ye, Peida

    2006-09-01

    We present a novel all-optical header and payload separation technique that can be utilized in Un-Slotted optical packet switched networks. The technique uses two modified TOADs, one is for packet header extraction with differential modulation scheme and the other performs a simple XOR operation between the packet and its self-derived header to get the separated payload. The main virtue of this system is simple structure and low power consumption. Through numerical simulations, the operating characteristics of the scheme are illustrated. In addition, the system parameters are discussed and designed to optimize the performance of the proposed scheme.

  4. All-optical modulation and switching by a metamaterial of plasmonic circuits.

    PubMed

    Davis, Timothy J; Gómez, Daniel E; Eftekhari, Fatima

    2014-08-15

    We demonstrate experimentally the modulation and switching of one light beam by a second beam using metamaterials constructed from arrays of plasmonic circuits. Each circuit consists of three gold nanorods that mix together two coherent but orthogonally polarized light beams leading to modulation by an interference effect. By adjusting the phase and the amplitude of one of the beams, the amplitude and spectral composition of the second beam is altered. The plasmonic circuits display an asymmetry that enables an angle-dependent modulation, which we demonstrate with a diffraction grating where the energy directed into two diffraction orders is controlled by a second light beam. This effect appears like an optically controlled blaze that we use to switch a light beam between two different directions.

  5. Fundamental mechanism for all-optical helicity-dependent switching of magnetization

    PubMed Central

    Chen, Xiang-Jun

    2017-01-01

    Switching magnetizations with femtosecond circularly polarized lasers may have revolutionary impacts on magnetic data storage and relevant applications. Achievements in ferrimagnetic and ferromagnetic materials of various structures strongly imply a general phenomenon of fundamental atom-laser interaction. Rotating an atom’s wave function with the rotating electric field of a circularly polarized laser, I show the quantum mechanics for the atom is equivalent to that in a static electric field of the same magnitude and a tremendous static magnetic field which interacts with the atom in somewhat different ways. When some conditions are satisfied, transitions of atoms in these two crossed effective fields lead to a highly nonequilibrium state with orbital magnetic moments inclining to the effective magnetic field. The switching finally completes after the pulse duration via relaxation. PMID:28117460

  6. Fundamental mechanism for all-optical helicity-dependent switching of magnetization

    NASA Astrophysics Data System (ADS)

    Chen, Xiang-Jun

    2017-01-01

    Switching magnetizations with femtosecond circularly polarized lasers may have revolutionary impacts on magnetic data storage and relevant applications. Achievements in ferrimagnetic and ferromagnetic materials of various structures strongly imply a general phenomenon of fundamental atom-laser interaction. Rotating an atom’s wave function with the rotating electric field of a circularly polarized laser, I show the quantum mechanics for the atom is equivalent to that in a static electric field of the same magnitude and a tremendous static magnetic field which interacts with the atom in somewhat different ways. When some conditions are satisfied, transitions of atoms in these two crossed effective fields lead to a highly nonequilibrium state with orbital magnetic moments inclining to the effective magnetic field. The switching finally completes after the pulse duration via relaxation.

  7. All-optical switching in granular ferromagnets caused by magnetic circular dichroism

    NASA Astrophysics Data System (ADS)

    Ellis, Matthew O. A.; Fullerton, Eric E.; Chantrell, Roy W.

    2016-07-01

    Magnetic recording using circularly polarised femto-second laser pulses is an emerging technology that would allow write speeds much faster than existing field driven methods. However, the mechanism that drives the magnetisation switching in ferromagnets is unclear. Recent theories suggest that the interaction of the light with the magnetised media induces an opto-magnetic field within the media, known as the inverse Faraday effect. Here we show that an alternative mechanism, driven by thermal excitation over the anisotropy energy barrier and a difference in the energy absorption depending on polarisation, can create a net magnetisation over a series of laser pulses in an ensemble of single domain grains. Only a small difference in the absorption is required to reach magnetisation levels observed experimentally and the model does not preclude the role of the inverse Faraday effect but removes the necessity that the opto-magnetic field is 10 s of Tesla in strength.

  8. All-optical switching in granular ferromagnets caused by magnetic circular dichroism

    PubMed Central

    Ellis, Matthew O. A.; Fullerton, Eric E.; Chantrell, Roy W.

    2016-01-01

    Magnetic recording using circularly polarised femto-second laser pulses is an emerging technology that would allow write speeds much faster than existing field driven methods. However, the mechanism that drives the magnetisation switching in ferromagnets is unclear. Recent theories suggest that the interaction of the light with the magnetised media induces an opto-magnetic field within the media, known as the inverse Faraday effect. Here we show that an alternative mechanism, driven by thermal excitation over the anisotropy energy barrier and a difference in the energy absorption depending on polarisation, can create a net magnetisation over a series of laser pulses in an ensemble of single domain grains. Only a small difference in the absorption is required to reach magnetisation levels observed experimentally and the model does not preclude the role of the inverse Faraday effect but removes the necessity that the opto-magnetic field is 10 s of Tesla in strength. PMID:27466066

  9. All-optical Q-switching limiter for high-power gigahertz modelocked diode-pumped solid-state lasers.

    PubMed

    Klenner, Alexander; Keller, Ursula

    2015-04-06

    Passively modelocked diode-pumped solid-state lasers (DPSSLs) with pulse repetition rates in the gigahertz regime suffer from an increased tendency for Q-switching instabilities. Low saturation fluence intracavity saturable absorbers - such as the semiconductor saturable absorber mirrors (SESAMs) - can solve this problem up to a certain average output power limited by the onset of SESAM damage. Here we present a passive stabilization mechanism, an all-optical Q-switching limiter, to reduce the impact of Q-switching instabilities and increase the potential output power of SESAM modelocked lasers in the gigahertz regime. With a proper cavity design a Kerr lens induced negative saturable absorber clamps the maximum fluence on the SESAM and therefore limits the onset of Q-switching instabilities. No critical cavity alignment is required because this Q-switching limiter acts well within the cavity stability regime. Using a proper cavity design, a high-power diode-pumped Yb:CALGO solid-state laser generated sub-100 fs pulses with an average output power of 4.1 W at a pulse repetition rate of 5 GHz. With a pulse duration of 96 fs we can achieve a peak power as high as 7.5 kW directly from the SESAM modelocked laser oscillator without any further external pulse amplification and/or pulse compression. We present a quantitative analysis of this Kerr lens induced Q-switching limiter and its impact on modelocked operation. Our work provides a route to compact high-power multi-gigahertz frequency combs based on SESAM modelocked diode-pumped solid-state lasers without any additional external amplification or pulse compression.

  10. All-optical wavelength-routing switch with monolithically integrated filter-free tunable wavelength converters and an AWG.

    PubMed

    Segawa, Toru; Matsuo, Shinji; Kakitsuka, Takaaki; Shibata, Yasuo; Sato, Tomonari; Kawaguchi, Yoshihiro; Kondo, Yasuhiro; Takahashi, Ryo

    2010-03-01

    We present a compact 4x8 wavelength-routing switch that monolithically integrates fast tunable wavelength converters (TWCs) and an arrayed-waveguide grating (AWG) for optical packet switching. The TWC consists of a double-ring-resonator-coupled tunable laser which allows rapid and stable switching, and an optical gate based on a parallel amplifier structure which prevents an input optical signal from being routed through the AWG (filter-free operation). A deep-ridge waveguide technology, employed for the AWG and ring resonators, facilitates the fabrication of the switch and makes the device compact. The filter-free TWCs achieve low crosstalk of the input optical signal of less than -22 dB. The wavelength routing operation of a non-return-to-zero (NRZ) signal at 10 Gbit/s is achieved with a switching time of less than 5 ns.

  11. All-optical spin switching: A new frontier in femtomagnetism — A short review and a simple theory

    NASA Astrophysics Data System (ADS)

    Zhang, G. P.; Latta, T.; Babyak, Z.; Bai, Y. H.; George, Thomas F.

    2016-08-01

    Using an ultrafast laser pulse to manipulate the spin degree of freedom has broad technological appeal. It allows one to control the spin dynamics on a femtosecond time scale. The discipline, commonly called femtomagnetism, started with the pioneering experiment by Beaurepaire and coworkers in 1996, who showed subpicosecond demagnetization occurs in magnetic Ni thin films. This finding has motivated extensive research worldwide. All-optical helicity-dependent spin switching (AO-HDS) represents a new frontier in femtomagnetism, where a single ultrafast laser pulse can permanently switch spin without any assistance from a magnetic field. This review summarizes some of the crucial aspects of this new discipline: key experimental findings, leading mechanisms, controversial issues, and possible future directions. The emphasis is on our latest investigation. We first develop the all-optical spin switching (AOS) rule that determines how the switchability depends on the light helicity. This rule allows one to understand microscopically how the spin is reversed and why the circularly polarized light appears more powerful than the linearly polarized light. Then we invoke our latest spin-orbit coupled harmonic oscillator model to simulate single spin reversal. We consider both continuous wave (cw) excitation and pulsed laser excitation. The results are in a good agreement with the experimental result (a MatLab code is available upon request from the author). We then extend the code to include the exchange interaction among different spin sites. We show where the “inverse-Faraday field” comes from and how the laser affects the spin reversal nonlinearly. Our hope is that this review will motivate new experimental and theoretical investigations and discussions.

  12. All-optical THz wave switching based on CH3NH3PbI3 perovskites

    PubMed Central

    Lee, Kyu-Sup; Kang, Rira; Son, Byungwoo; Kim, Dong-Yu; Yu, Nan Ei; Ko, Do-Kyeong

    2016-01-01

    Hybrid structures of silicon with organic–inorganic perovskites are proposed for optically controllable switching of terahertz (THz) waves over a broad spectral range from 0.2 to 2THz. A 532-nm external laser was utilized to generate photoexcited free carriers at the devices and consequentially to control the terahertz amplitude modulation, obtaining a depth of up to 68% at a laser irradiance of 1.5 W/cm2. In addition, we compared the performances from three types of perovskite devices fabricated via different solution processing methods and suggested a stable and highly efficient THz switch based on a one-step processing. By this we demonstrated the possibility of perovskites as THz wave switching devices in addition to photovoltaics. PMID:27883067

  13. Magnetic layer thickness dependence of all-optical magnetization switching in GdFeCo thin films

    NASA Astrophysics Data System (ADS)

    Yoshikawa, Hiroki; El Moussaoui, Souliman; Terashita, Shinnosuke; Ueda, Ryohei; Tsukamoto, Arata

    2016-07-01

    To clarify the relationship between all-optical magnetization switching (AOS) and nonlocal and nonadiabatic energy dissipation process, we focus on the contribution from energy dissipation in the depth direction. Differently designed structure dependence of created magnetic domain is observed from the reversal phenomenon, AOS, or multidomains by thermomagnetic nucleation (TMN) in GdFeCo multilayer thin films. TMN depends on the shared absorbed energy throughout the continuous metallic volume. On the other hand, AOS critically depends on nonadiabatic energy dissipation process with the electron system in sub-picoseconds. Furthermore, the laser fluence dependence of AOS-created domain sizes indicates that the value of irradiated laser fluence threshold per magnetic domain volume is almost constant. However, a lower laser irradiation fluence below 1-2 mW has a larger value and thickness dependence. From these results, we suggest that AOS depends on energy dissipation from the incident surface in the depth direction for a few picoseconds.

  14. Optical nonlinearities and ultrafast all-optical switching of m-plane GaN in the near-infrared

    SciTech Connect

    Fang, Yu; Zhou, Feng; Yang, Junyi; Yang, Yong; Xiao, Zhengguo; Wu, Xingzhi; Song, Yinglin

    2015-06-22

    We reported a systematic investigation on the three-photon absorption (3PA) spectra and wavelength dispersion of Kerr refraction of bulk m-plane GaN crystal with both polarization E⊥c and E//c by femtosecond Z-scan technique in the near-infrared region from 760 to 1030 nm. Both 3PA spectra and Kerr refraction dispersion were in good agreement with two-band models. The calculated nonlinear figure of merit and measured ultrafast nonlinear refraction dynamics via femtosecond pump-probe with phase object method revealed that m-plane GaN would be a promising candidate for ultrafast all-optical switching and autocorrelation applications at telecommunication wavelengths.

  15. A novel all-optical label processing based on multiple optical orthogonal codes sequences for optical packet switching networks

    NASA Astrophysics Data System (ADS)

    Zhang, Chongfu; Qiu, Kun; Xu, Bo; Ling, Yun

    2008-05-01

    This paper proposes an all-optical label processing scheme that uses the multiple optical orthogonal codes sequences (MOOCS)-based optical label for optical packet switching (OPS) (MOOCS-OPS) networks. In this scheme, each MOOCS is a permutation or combination of the multiple optical orthogonal codes (MOOC) selected from the multiple-groups optical orthogonal codes (MGOOC). Following a comparison of different optical label processing (OLP) schemes, the principles of MOOCS-OPS network are given and analyzed. Firstly, theoretical analyses are used to prove that MOOCS is able to greatly enlarge the number of available optical labels when compared to the previous single optical orthogonal code (SOOC) for OPS (SOOC-OPS) network. Then, the key units of the MOOCS-based optical label packets, including optical packet generation, optical label erasing, optical label extraction and optical label rewriting etc., are given and studied. These results are used to verify that the proposed MOOCS-OPS scheme is feasible.

  16. Kerr-induced all-optical switching in a GaInP photonic crystal Fabry-Perot resonator.

    PubMed

    Eckhouse, V; Cestier, I; Eisenstein, G; Combrié, S; Lehoucq, G; De Rossi, A

    2012-04-09

    We describe nonlinear properties of a GaInP photonic crystal Fabry-Perot resonator containing integrated reflectors. The device exhibits an extremely large static nonlinearity due to a thermal effect. Dynamical measurements were used to discriminate between the thermal and Kerr contributions to the nonlinearity. The high frequency nonlinear response is strictly due to the Kerr effect and the efficiency is similar to that obtained in self-phase modulation and four wave mixing experiments. The waveguide dispersion and the wavelength dependent integrated reflectors yield a series of transmission peaks with varying widths which determine the maximum speed at which the device can operate. Switching and wavelength conversion experiments with 92ps and 30ps wide pulses were demonstrated using pulse energies of a few pJ. The switching process is Kerr dominated with the fundamental response being essentially instantaneous so that the obtainable switching speed is strictly determined by the resonator structure.

  17. All-optically reconfigurable and tunable fiber surface grating for in-fiber devices: a wideband tunable filter.

    PubMed

    Yu, Jianhui; Han, Yuqi; Huang, Hankai; Li, Haozi; Hsiao, Vincent K S; Liu, Weiping; Tang, Jieyuan; Lu, Huihui; Zhang, Jun; Luo, Yunhan; Zhong, Yongchun; Zang, Zhigang; Chen, Zhe

    2014-03-10

    A fiber surface grating (FSG) formed from a photosensitive liquid crystal hybrid (PLCH) film overlaid on a side-polished fiber (SPF) is studied and has been experimentally shown to be able to function as an all-optically reconfigurable and tunable fiber device. The device is all-optically configured to be a short period fiber surface grating (SPFSG) when a phase mask is used, and then reconfigured to be a long period FSG (LPFSG) when an amplitude mask is used. Experimental results show that both the short and long period FSGs can function as an optically tunable band-rejection filter and have different performances with different pump power and different configured period of the FSG. When configured as a SPFSG, the device can achieve a high extinction ratio (ER) of 21.5dB and a wideband tunability of 31nm are achieved. When configured as a LPFSG, the device can achieve an even higher ER of 23.4dB and a wider tunable bandwidth of 60nm. Besides these tunable performances of the device, its full width at half maximum (FWHM) can also be optically tuned. The reconfigurability and tunability of the fiber device open up possibilities for other all-optically programmable and tunable fiber devices.

  18. All-optical 4-bit binary to binary coded decimal converter with the help of semiconductor optical amplifier-assisted Sagnac switch

    NASA Astrophysics Data System (ADS)

    Bhattachryya, Arunava; Kumar Gayen, Dilip; Chattopadhyay, Tanay

    2013-04-01

    All-optical 4-bit binary to binary coded decimal (BCD) converter has been proposed and described, with the help of semiconductor optical amplifier (SOA)-assisted Sagnac interferometric switches in this manuscript. The paper describes all-optical conversion scheme using a set of all-optical switches. BCD is common in computer systems that display numeric values, especially in those consisting solely of digital logic with no microprocessor. In many personal computers, the basic input/output system (BIOS) keep the date and time in BCD format. The operations of the circuit are studied theoretically and analyzed through numerical simulations. The model accounts for the SOA small signal gain, line-width enhancement factor and carrier lifetime, the switching pulse energy and width, and the Sagnac loop asymmetry. By undertaking a detailed numerical simulation the influence of these key parameters on the metrics that determine the quality of switching is thoroughly investigated.

  19. Domain size criterion for the observation of all-optical helicity-dependent switching in magnetic thin films

    NASA Astrophysics Data System (ADS)

    El Hadri, Mohammed Salah; Hehn, Michel; Pirro, Philipp; Lambert, Charles-Henri; Malinowski, Grégory; Fullerton, Eric E.; Mangin, Stéphane

    2016-08-01

    To understand the necessary condition for the observation of all-optical helicity-dependent switching (AO-HDS) of magnetization in thin films, we investigated ferromagnetic Co/Pt and Co/Ni multilayers as well as ferrimagnetic TbCo alloys as a function of magnetic layer compositions and thicknesses. We show that both ferro- and ferrimagnets with high saturation magnetization show AO-HDS if their magnetic thickness is strongly reduced below a material-dependent threshold thickness. By taking into account the demagnetizing energy and the domain wall energy, we are able to define a criterion to predict whether AO-HDS or thermal demagnetization (TD) will be observed. This criterion for the observation of AO-HDS is that the equilibrium size of magnetic domains forming during the cooling process should be larger than the laser spot size. From these results we anticipate that more magnetic materials are expected to show AO-HDS. However, the effect of the optical pulses' helicity is hidden by the formation of small magnetic domains during the cooling process.

  20. All-optical DGD monitor for packet-switched networks based on an integrated active Mach Zehnder interferometer operating as logic XOR gate

    NASA Astrophysics Data System (ADS)

    Vilar, R.; Martinez, J. M.; Ramos, F.; Marti, J.

    2008-11-01

    An all-optical differential group delay (DGD) monitor for packet-switched networks is proposed. The monitoring approach consists of an integrated active Mach-Zehnder interferometer acting as a logic XOR gate. According to the estimated DGD value, a latching switch is employed to route the input packets "on-the-fly". The simulation results show a successful operation which has been confirmed with the experimental validation of the XOR-based monitoring subsystem.

  1. Conformal Coating of a Phase Change Material on Ordered Plasmonic Nanorod Arrays for Broadband All-Optical Switching.

    PubMed

    Guo, Peijun; Weimer, Matthew S; Emery, Jonathan D; Diroll, Benjamin T; Chen, Xinqi; Hock, Adam S; Chang, Robert P H; Martinson, Alex B F; Schaller, Richard D

    2017-01-24

    Actively tunable optical transmission through artificial metamaterials holds great promise for next-generation nanophotonic devices and metasurfaces. Plasmonic nanostructures and phase change materials have been extensively studied to this end due to their respective strong interactions with light and tunable dielectric constants under external stimuli. Seamlessly integrating plasmonic components with phase change materials, as demonstrated in the present work, can facilitate phase change by plasmonically enabled light confinement and meanwhile make use of the high sensitivity of plasmon resonances to the variation of dielectric constant associated with the phase change. The hybrid platform here is composed of plasmonic indium-tin-oxide nanorod arrays (ITO-NRAs) conformally coated with an ultrathin layer of a prototypical phase change material, vanadium dioxide (VO2), which enables all-optical modulation of the infrared as well as the visible spectral ranges. The interplay between the intrinsic plasmonic nonlinearity of ITO-NRAs and the phase transition induced permittivity change of VO2 gives rise to spectral and temporal responses that cannot be achieved with individual material components alone.

  2. All-optical compact surface plasmonic two-mode interference device for optical logic gate operation.

    PubMed

    Gogoi, Nilima; Sahu, Partha Pratim

    2015-02-10

    In this paper, we have proposed an ultra-compact surface plasmonic two-mode interference (SPTMI) coupler having a silicon core, silver upper and lower cladding, and GaAsInP left and right cladding for basic logic gate operations. By modulating the refractive index of the GaAsInP cladding with incidence of optical pulse energy, we have shown coupling characteristics depending on additional phase change ΔΦ(E) between the excited surface plasmon polariton modes propagating through the silicon core. By using applied optical pulse dependent coupling behavior of the proposed SPTMI device, the operations of NOT, AND, and OR logic gates are shown. It is also seen that the coupling length of the proposed device is 32.3 times more compact than that of a multimode interference-directional coupler.

  3. Analysis of spectral response of optical switching devices based on chalcogenide bistable fiber Bragg gratings

    NASA Astrophysics Data System (ADS)

    Scholtz, Lubomír.; Müllerová, Jarmila

    2015-01-01

    Fiber Bragg gratings (FBGs) are novel and promising devices for all-optical switching, ADD/DROP multiplexers, AND gates, switches, all-optical memory elements. Optical switching based on optical Kerr effects induced with high pump laser light incident on the FBGs cause the change of spectral characteristics of grating depending on the incident power. In this paper numerical studies of the nonlinear FBGs are presented. Optical switching based on the optical bistability in nonlinear chalcogenide FBGs is investigated. The spectral response of nonlinear FBGs is discussed from theoretical viewpoint. The simulations are based on the nonlinear coupled mode theory.

  4. Resistive Switching Memory Devices Based on Proteins.

    PubMed

    Wang, Hong; Meng, Fanben; Zhu, Bowen; Leow, Wan Ru; Liu, Yaqing; Chen, Xiaodong

    2015-12-09

    Resistive switching memory constitutes a prospective candidate for next-generation data storage devices. Meanwhile, naturally occurring biomaterials are promising building blocks for a new generation of environmentally friendly, biocompatible, and biodegradable electronic devices. Recent progress in using proteins to construct resistive switching memory devices is highlighted. The protein materials selection, device engineering, and mechanism of such protein-based resistive switching memory are discussed in detail. Finally, the critical challenges associated with protein-based resistive switching memory devices are presented, as well as insights into the future development of resistive switching memory based on natural biomaterials.

  5. Ability of dynamic holography in self-assembled hybrid nanostructured silica films for all-optical switching and multiplexing

    NASA Astrophysics Data System (ADS)

    Telbiz, German; Bugaychuk, Svitlana; Leonenko, Eugen; Derzhypolska, Liudmyla; Gnatovskyy, Vladimir; Pryadko, Igor

    2015-04-01

    The sol-gel method has been employed in the fabrication of easily processable mesostructured films consisting of a nonionic surfactant and silica as the inorganic component. The ability of the occluded Pluronic P123 mesostructures to solubilize guest molecules made these films ideal host matrices for organic dyes and molecular assemblies, possessing substantial nonlinear susceptibilities. These films were explored for use as the photonic layer in all-optical time-to-space converters and proved successful at increasing the optical response of the intercalated dyes to a point that would make these composite films applicable for use as the photonic layer. Recording of a dynamical grating in a single-pulse regime has been obtained. Since the dynamical grating exhibits the fast relaxation time (up to 10 ns), the nonlinear mechanism represents an electronic excitation of the photosensitive molecules. As far as the dye molecules are distributed in nanoporous silica, a model of `gas of molecular dye' may be rightly used in order to consider nonlinear optical properties in the nanostructured hybrid films. We suppose that further improvement of the nonlinear optical nanomaterials may follow on the way to embed additional inclusions, which will not promote the heat accumulation in the host matrix and will lead to effective dissipation of the heat energy.

  6. Grating light modulators for use as de-multiplexer and switching device in wavelength-selective switching systems

    NASA Astrophysics Data System (ADS)

    Pothisorn, Araya; Hariz, Alex J.

    2007-12-01

    All optical switches have been used with measured success in response to a high demand in all optical networks, and a dramatic increase in the Internet and communication needs over the last decade. The wavelength-selective switch is the mechanism used in various switching applications. MEMS-based wavelength-selective switches (WSS) are the most promising technology to bring all-optical switches into wide implementation by providing reasonable cost, excellent performance, and most reliable use of micro-electromechanical systems (MEMS) technology. Optical-MEMS devices, often referred to as micro-opto-electromechanical systems or MOEMS; have been used successfully in optical network systems and particularly in switching devices such as waveguide and free-space switches. Free-space switching devices are more popular than waveguide switches, because they offer faster switching time and are more scalable. 1D MEMS-based WSSs, using free-space approach, require the use of integrated multiplexer/de-multiplexer and micro-mirror arrays for their operations [1, 2]. The switching time depends primarily on the time it takes for the scanning micro-mirrors to steer de-multiplexed beams to the desired output ports. This is due to the fact that the mirrors are the main inertial components in free-space switching systems. Grating Light Modulators (GLM) were introduced a decade ago for use in diffraction optics. Research has begun to investigate their use in communication optics. Unlike other 1D MEMS-based WSS, GLM promises to offer very low loss for the whole system and fast switching time of as low as 20 ns with no integrated micro-mirrors [3-5]. We propose the development of a switching system incorporating a GLM as the central unit acting as both de-multiplexer and switching device in one spot, and which does not require any moving micro-mirror arrays. Therefore, the switching time is entirely dependent on the GLM device which is relatively fast. GLMs use diffraction principles to

  7. Band edge tailoring of InGaAs/AlAsSb coupled double quantum wells for a monolithically integrated all-optical switch.

    PubMed

    Feng, Jijun; Akimoto, Ryoichi; Gozu, Shin-ichiro; Mozume, Teruo; Hasama, Toshifumi; Ishikawa, Hiroshi

    2013-07-01

    We demonstrate a compact all-optical Michelson interferometer (MI) gating switch with monolithic integration of two different bandgap energies. Based on the ion-induced intermixing in InGaAs/AlAsSb coupled double quantum wells, the blueshift of the band edge can be tailored. Through phosphorus ion implantation with a dose of 5 × 10(14) cm(-2) and subsequent annealing at 720 °C for 60 s, an implanted sample can acquire a high transmittance compared with the as-grown one. Meanwhile, the cross-phase modulation (XPM) efficiency of a non-implanted sample undergoing the same annealing process decreases little. An implanted part for signal propagation and a non-implanted section for XPM are thus monolithically integrated for an MI switch by an area-selective manner. Full switching of a π-rad nonlinear phase shift is achieved with pump pulse energy of 5.6 pJ at a 10-GHz repetition rate.

  8. Controllable transmission photonic band gap and all-optical switching behaviors of 1-D InAs/GaAs quantum-dot photonic crystal

    NASA Astrophysics Data System (ADS)

    Hu, Zhenhua; Xiang, Bowen; Xing, Yunsheng

    2016-12-01

    Transmission optical properties of one-dimensional (1-D) InAs/GaAs quantum-dot photonic crystal (QD-PC), composed of 400 elementary cells, were analyzed by using transfer matrix method. In our calculations, a homogeneous broadening with temperature and other inhomogeneous broadening with quantum dot (QD) size fluctuations are introduced. Our results show that a large optical Stark shift occurs at the high energy edge of the transmission photonic band-gap (TPBG) when, which exhibits the function of light with light, an external laser field acts resonantly on the excitons in the InAs QDs. Utilized this TPBG based on the pump-probe geometry, an all-optical switch can be constructed and the on-off switching extinction ratio (SER) is varied with both the temperature and the inhomogeneity of QDs. Significantly, it still maintains switching behavior and can process the data sequence of return-to-zero codes of 250 Gb/s even if the QD standard deviation of relative size fluctuations (SD-RSF) is up to 3% and the temperature is at 100 K.

  9. Emergence of electron coherence and two-color all-optical switching in MoS2 based on spatial self-phase modulation

    PubMed Central

    Wu, Yanling; Wu, Qiong; Sun, Fei; Cheng, Cai; Meng, Sheng; Zhao, Jimin

    2015-01-01

    Generating electron coherence in quantum materials is essential in optimal control of many-body interactions and correlations. In a multidomain system this signifies nonlocal coherence and emergence of collective phenomena, particularly in layered 2D quantum materials possessing novel electronic structures and high carrier mobilities. Here we report nonlocal ac electron coherence induced in dispersed MoS2 flake domains, using coherent spatial self-phase modulation (SSPM). The gap-dependent nonlinear dielectric susceptibility χ(3) measured is surprisingly large, where direct interband transition and two-photon SSPM are responsible for excitations above and below the bandgap, respectively. A wind-chime model is proposed to account for the emergence of the ac electron coherence. Furthermore, all-optical switching is achieved based on SSPM, especially with two-color intraband coherence, demonstrating that electron coherence generation is a ubiquitous property of layered quantum materials. PMID:26351696

  10. Ultrafast all-optical switch with cross-phase modulation by area-selective ion implantation in InGaAs/AlAsSb coupled double quantum wells.

    PubMed

    Feng, Jijun; Akimoto, Ryoichi; Gozu, Shin-ichiro; Mozume, Teruo; Hasama, Toshifumi; Ishikawa, Hiroshi

    2012-12-10

    We have developed a compact gate switch with monolithic integration of all-optical cross-phase modulation (XPM) in a Mach-Zehnder interferometer (MZI). XPM is caused by intersubband transition (ISBT) in InGaAs/AlAsSb coupled double quantum wells (CDQWs) by area-selective silicon ion implantation and rapid thermal annealing (RTA). While injecting pump light through a transverse electric/transverse magnetic (TE/TM) beam combiner, XPM is induced in one MZI arm and gating operation can be realized. The RTA condition is optimized, and the sample is annealed at 780 °C for 8 s with an implantation dose of 5 × 10(13) cm(-2). Dependence of XPM efficiency on the length of the implanted mesa is also analyzed, and there exists an optimum implantation length to fulfill both high efficiency of ISBT modulation and low loss of the probe and pump signals.

  11. Demonstration of an all-optical routing decision circuit

    NASA Astrophysics Data System (ADS)

    Liu, Y.; Martinez, J. M.; Herrera, J.; Clavero, R.; Ramos, F.; Koonen, A. M. J.; Marti, J.; Dorren, H. J. S.

    2007-11-01

    The routing decision functionality by all-optically interconnecting semiconductor-based all-optical logic gates and flip-flops is demonstrated in the frame of an all-optical packet switching network. We experimentally show that the output of the all-optical 2-bit correlator is capable of toggling the states of the integrated flip-flop every 2.5 ns via an adaptation stage. High extinction ratios are obtained at the output of the flip-flop, which can be used to feed a high-speed wavelength converter to complete the routing functionality of the AOLS node. The potential integration of these SOA-MZI based devices make the proposed approach a very interesting solution for future packet switched optical networks.

  12. Analysis of spectral response of optical switching devices based on chalcogenide bistable fiber Bragg gratings

    NASA Astrophysics Data System (ADS)

    Scholtz, Łubomír.; Solanská, Michaela; Ladányi, Libor; Müllerová, Jarmila

    2016-12-01

    Although nonlinear fiber Bragg gratings (FBGs) are well known devices more than three decades their using as all-optical switching elements is still investigated. Current research is focused on optimization their properties for their using in future all-optical networks. The main problem is minimizing of switching intensities needed for achieving the changes of transmission state. Switching intensities were over several years reduced from hundreds of GW/cm2 to tens of MW/cm2. Reduction of switching intensities can be achieved by selecting appropriate gratings and signal parameters or using suitable materials. This contribution is focused on nonlinear FBGs based on chalcogenide glasses which are very often used in various applications. Chalcogenide glasses thanks to their high nonlinear parameters are suitable candidates for reducing switching intensities of nonlinear FBGs.

  13. All-optical switching of localized surface plasmon resonance in single gold nanosandwich using GeSbTe film as an active medium

    SciTech Connect

    Hira, T.; Homma, T.; Uchiyama, T.; Kuwamura, K.; Kihara, Y.; Saiki, T.

    2015-01-19

    Localized surface plasmon resonance (LSPR) switching was investigated in a Au/GeSbTe/Au nanosandwich as a key active element for plasmonic integrated circuits and devices. Near-infrared single-particle spectroscopy was conducted to examine the interaction of a Au nanorod (AuNR) and Au film, between which a GeSbTe layer was incorporated as an active phase-change media. Numerical calculation revealed that hybridized modes of the AuNR and Au film exhibit a significant change of scattering intensity with the phase change. In particular, the antisymmetric (magnetic resonance) mode can be modulated effectively by the extinction coefficient of GST, as well as its refractive index. Experimental demonstration of the switching operation was performed by alternate irradiation with a picosecond pulsed laser for amorphization and a continuous wave laser for crystallization. Repeatable modulation was obtained by monitoring the scattering light around the LSPR peak at λ = 1070 nm.

  14. Complexity-Enabled Sensor Networks and Photonic Switching Devices

    DTIC Science & Technology

    2008-12-20

    slow diffusion of atoms out of the pump laser beams. The Doppler -broadened linewidth of the transition at this temperature was ~550 MHz. To prevent...Transverse Patterns for All-Optical Switching,’ Quantum Electronics and Laser Science 2008, San Jose, CA, May 5, 2008. Z. Gao and D.J. Gauthier...2007. A. M. C. Dawes and D. J. Gauthier, `Using Transverse Patterns for All-Optical Switching,’ Ninth Rochester Conference on Coherence & Quantum

  15. A sub-1-volt nanoelectromechanical switching device.

    PubMed

    Lee, Jeong Oen; Song, Yong-Ha; Kim, Min-Wu; Kang, Min-Ho; Oh, Jae-Sub; Yang, Hyun-Ho; Yoon, Jun-Bo

    2013-01-01

    Nanoelectromechanical (NEM) switches have received widespread attention as promising candidates in the drive to surmount the physical limitations currently faced by complementary metal oxide semiconductor technology. The NEM switch has demonstrated superior characteristics including quasi-zero leakage behaviour, excellent density capability and operation in harsh environments. However, an unacceptably high operating voltage (4-20 V) has posed a major obstacle in the practical use of the NEM switch in low-power integrated circuits. To utilize the NEM switch widely as a core device component in ultralow power applications, the operation voltage needs to be reduced to 1 V or below. However, sub-1 V actuation has not yet been demonstrated because of fabrication difficulties and irreversible switching failure caused by surface adhesion. Here, we report the sub-1 V operation of a NEM switch through the introduction of a novel pipe clip device structure and an effective air gap fabrication technique. This achievement is primarily attributed to the incorporation of a 4-nm-thick air gap, which is the smallest reported so far for a NEM switch generated using a 'top-down' approach. Our structure and process can potentially be utilized in various nanogap-related applications, including NEM switch-based ultralow-power integrated circuits, NEM resonators, nanogap electrodes for scientific research and sensors.

  16. All-optical fast random number generator.

    PubMed

    Li, Pu; Wang, Yun-Cai; Zhang, Jian-Zhong

    2010-09-13

    We propose a scheme of all-optical random number generator (RNG), which consists of an ultra-wide bandwidth (UWB) chaotic laser, an all-optical sampler and an all-optical comparator. Free from the electric-device bandwidth, it can generate 10Gbit/s random numbers in our simulation. The high-speed bit sequences can pass standard statistical tests for randomness after all-optical exclusive-or (XOR) operation.

  17. All-optical analog comparator.

    PubMed

    Li, Pu; Yi, Xiaogang; Liu, Xianglian; Zhao, Dongliang; Zhao, Yongpeng; Wang, Yuncai

    2016-08-23

    An analog comparator is one of the core units in all-optical analog-to-digital conversion (AO-ADC) systems, which digitizes different amplitude levels into two levels of logical '1' or '0' by comparing with a defined decision threshold. Although various outstanding photonic ADC approaches have been reported, almost all of them necessitate an electrical comparator to carry out this binarization. The use of an electrical comparator is in contradiction to the aim of developing all-optical devices. In this work, we propose a new concept of an all-optical analog comparator and numerically demonstrate an implementation based on a quarter-wavelength-shifted distributed feedback laser diode (QWS DFB-LD) with multiple quantum well (MQW) structures. Our results show that the all-optical comparator is very well suited for true AO-ADCs, enabling the whole digital conversion from an analog optical signal (continuous-time signal or discrete pulse signal) to a binary representation totally in the optical domain. In particular, this all-optical analog comparator possesses a low threshold power (several mW), high extinction ratio (up to 40 dB), fast operation rate (of the order of tens of Gb/s) and a step-like transfer function.

  18. All-optical analog comparator

    NASA Astrophysics Data System (ADS)

    Li, Pu; Yi, Xiaogang; Liu, Xianglian; Zhao, Dongliang; Zhao, Yongpeng; Wang, Yuncai

    2016-08-01

    An analog comparator is one of the core units in all-optical analog-to-digital conversion (AO-ADC) systems, which digitizes different amplitude levels into two levels of logical ‘1’ or ‘0’ by comparing with a defined decision threshold. Although various outstanding photonic ADC approaches have been reported, almost all of them necessitate an electrical comparator to carry out this binarization. The use of an electrical comparator is in contradiction to the aim of developing all-optical devices. In this work, we propose a new concept of an all-optical analog comparator and numerically demonstrate an implementation based on a quarter-wavelength-shifted distributed feedback laser diode (QWS DFB-LD) with multiple quantum well (MQW) structures. Our results show that the all-optical comparator is very well suited for true AO-ADCs, enabling the whole digital conversion from an analog optical signal (continuous-time signal or discrete pulse signal) to a binary representation totally in the optical domain. In particular, this all-optical analog comparator possesses a low threshold power (several mW), high extinction ratio (up to 40 dB), fast operation rate (of the order of tens of Gb/s) and a step-like transfer function.

  19. All-optical analog comparator

    PubMed Central

    Li, Pu; Yi, Xiaogang; Liu, Xianglian; Zhao, Dongliang; Zhao, Yongpeng; Wang, Yuncai

    2016-01-01

    An analog comparator is one of the core units in all-optical analog-to-digital conversion (AO-ADC) systems, which digitizes different amplitude levels into two levels of logical ‘1’ or ‘0’ by comparing with a defined decision threshold. Although various outstanding photonic ADC approaches have been reported, almost all of them necessitate an electrical comparator to carry out this binarization. The use of an electrical comparator is in contradiction to the aim of developing all-optical devices. In this work, we propose a new concept of an all-optical analog comparator and numerically demonstrate an implementation based on a quarter-wavelength-shifted distributed feedback laser diode (QWS DFB-LD) with multiple quantum well (MQW) structures. Our results show that the all-optical comparator is very well suited for true AO-ADCs, enabling the whole digital conversion from an analog optical signal (continuous-time signal or discrete pulse signal) to a binary representation totally in the optical domain. In particular, this all-optical analog comparator possesses a low threshold power (several mW), high extinction ratio (up to 40 dB), fast operation rate (of the order of tens of Gb/s) and a step-like transfer function. PMID:27550874

  20. High speed all optical networks

    NASA Technical Reports Server (NTRS)

    Chlamtac, Imrich; Ganz, Aura

    1990-01-01

    An inherent problem of conventional point-to-point wide area network (WAN) architectures is that they cannot translate optical transmission bandwidth into comparable user available throughput due to the limiting electronic processing speed of the switching nodes. The first solution to wavelength division multiplexing (WDM) based WAN networks that overcomes this limitation is presented. The proposed Lightnet architecture takes into account the idiosyncrasies of WDM switching/transmission leading to an efficient and pragmatic solution. The Lightnet architecture trades the ample WDM bandwidth for a reduction in the number of processing stages and a simplification of each switching stage, leading to drastically increased effective network throughputs. The principle of the Lightnet architecture is the construction and use of virtual topology networks, embedded in the original network in the wavelength domain. For this construction Lightnets utilize the new concept of lightpaths which constitute the links of the virtual topology. Lightpaths are all-optical, multihop, paths in the network that allow data to be switched through intermediate nodes using high throughput passive optical switches. The use of the virtual topologies and the associated switching design introduce a number of new ideas, which are discussed in detail.

  1. 46 CFR 169.681 - Disconnect switches and devices.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 46 Shipping 7 2012-10-01 2012-10-01 false Disconnect switches and devices. 169.681 Section 169.681... Less Than 100 Gross Tons § 169.681 Disconnect switches and devices. (a) Externally operable switches or... protected by fuses, the disconnect switch required for fuses in § 169.683(b) of this chapter is adequate...

  2. 46 CFR 169.681 - Disconnect switches and devices.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 46 Shipping 7 2014-10-01 2014-10-01 false Disconnect switches and devices. 169.681 Section 169.681... Less Than 100 Gross Tons § 169.681 Disconnect switches and devices. (a) Externally operable switches or... protected by fuses, the disconnect switch required for fuses in § 169.683(b) of this chapter is adequate...

  3. 46 CFR 169.681 - Disconnect switches and devices.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 46 Shipping 7 2013-10-01 2013-10-01 false Disconnect switches and devices. 169.681 Section 169.681... Less Than 100 Gross Tons § 169.681 Disconnect switches and devices. (a) Externally operable switches or... protected by fuses, the disconnect switch required for fuses in § 169.683(b) of this chapter is adequate...

  4. 46 CFR 169.681 - Disconnect switches and devices.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 46 Shipping 7 2011-10-01 2011-10-01 false Disconnect switches and devices. 169.681 Section 169.681... Less Than 100 Gross Tons § 169.681 Disconnect switches and devices. (a) Externally operable switches or... protected by fuses, the disconnect switch required for fuses in § 169.683(b) of this chapter is adequate...

  5. 46 CFR 169.681 - Disconnect switches and devices.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 46 Shipping 7 2010-10-01 2010-10-01 false Disconnect switches and devices. 169.681 Section 169.681... Less Than 100 Gross Tons § 169.681 Disconnect switches and devices. (a) Externally operable switches or... protected by fuses, the disconnect switch required for fuses in § 169.683(b) of this chapter is adequate...

  6. Ultrafast all-optical switching and error-free 10 Gbit/s wavelength conversion in hybrid InP-silicon on insulator nanocavities using surface quantum wells

    SciTech Connect

    Bazin, Alexandre; Monnier, Paul; Beaudoin, Grégoire; Sagnes, Isabelle; Raj, Rama; Lenglé, Kevin; Gay, Mathilde; Bramerie, Laurent; Braive, Rémy; Raineri, Fabrice

    2014-01-06

    Ultrafast switching with low energies is demonstrated using InP photonic crystal nanocavities embedding InGaAs surface quantum wells heterogeneously integrated to a silicon on insulator waveguide circuitry. Thanks to the engineered enhancement of surface non radiative recombination of carriers, switching time is obtained to be as fast as 10 ps. These hybrid nanostructures are shown to be capable of achieving systems level performance by demonstrating error free wavelength conversion at 10 Gbit/s with 6 mW switching powers.

  7. Dimensioning of 10 Gbit/s all-optical packet switched networks based on optical label swapping routers with multistage 2R regeneration.

    PubMed

    Puerto, G; Ortega, B; Manzanedo, M D; Martínez, A; Pastor, D; Capmany, J; Kovacs, G

    2006-10-30

    This paper describes both the experimental and theoretical investigations on the cascadability of all-optical routers in optical label swapping networks incorporating a multistage wavelength conversion with 2R regeneration. A full description of a novel experimental setup allows the packet by packet measurement up to 16 hops with 10 Gb/s payload showing 1 dB penalty with 10(-12) bit error rate. Similarly, the simulations on the system allow a prediction on the cascadability of the router up to 64 hops.

  8. Switching in coplanar amorphous hydrogenated silicon devices

    NASA Astrophysics Data System (ADS)

    Avila, A.; Asomoza, R.

    2000-01-01

    Switching has been observed in a wide variety of materials and devices. Hydrogenated amorphous silicon has become one of the most important cases because of interest in neural network applications. Although there are many reports regarding this phenomenon, not all of the physical processes involved are still determined precisely. Therefore, some more experimental information is needed in order to achieve this task. Much of the behavior of the devices has been ascribed to the existence of a filamentary region which is produced after the first switching process, called forming. We observed this filamentary region in its full extension by producing forming in amorphous silicon devices with coplanar metallic contacts placed near each other (˜5 μm). The I-V characteristics, filament optical and atomic force microscopy images and chemical etching led us to correlate changes in resistance to metal inclusion into the amorphous film. There are two stages: the first is related to contact stabilization, the second to metal transport into the film bulk. Optical images show a permanent filamentary region after forming. AFM images of these filaments showed that they are formed essentially by material accumulation between the contacts. This material tends to get some atomic arrangement, becoming a polycrystalline solid. If the device was led to breakdown, such accumulation becomes either a hillock or a thin conducting channel connecting both contacts. In the case of a switching filament, the accumulation tends to be a chain of smaller hillocks along the conduction path. Metal from the contacts remains in the conduction path after forming and chemical etching indicated that it is placed near the path core. Before forming, a tunneling transport process can be ascribed to the non-ohmic behavior of the samples during the first stage of metallic inclusion.

  9. All-optical flip-flop and control methods thereof

    DOEpatents

    Maywar, Drew; Agrawal, Govind P.

    2010-03-23

    Embodiments of the invention pertain to remote optical control of holding beam-type, optical flip-flop devices, as well as to the devices themselves. All-optical SET and RE-SET control signals operate on a cw holding beam in a remote manner to vary the power of the holding beam between threshold switching values to enable flip-flop operation. Cross-gain modulation and cross-polarization modulation processes can be used to change the power of the holding beam.

  10. Ultrafast Nonlinear Optical Spectroscopy of a Dual-Band Negative Index Metamaterial All-Optical Switching Device

    DTIC Science & Technology

    2011-02-28

    2,3,4 Prashanth C. Upadhya, 1 Rohit P. Prasankumar, 1 Antoinette J. Taylor, 1 and S. R. J. Brueck 2,* 1Center for Integrated Nanotechnologies...2009). 23. A. Mary , S. G. Rodrigo, F. J. Garcia-Vidal, and L. Martin-Moreno, “Theory of negative-refractive-index response of double-fishnet

  11. Spark gap device for precise switching

    DOEpatents

    Boettcher, G.E.

    1984-10-02

    A spark gap device for precise switching of an energy storage capacitor into an exploding bridge wire load is disclosed. Niobium electrodes having a melting point of 2,415 degrees centigrade are spaced apart by an insulating cylinder to define a spark gap. The electrodes are supported by conductive end caps which, together with the insulating cylinder, form a hermetically sealed chamber filled with an inert, ionizable gas, such as pure xenon. A quantity of solid radioactive carbon-14 within the chamber adjacent the spark gap serves as a radiation stabilizer. The sides of the electrodes and the inner wall of the insulating cylinder are spaced apart a sufficient distance to prevent unwanted breakdown initiation. A conductive sleeve may envelop the outside of the insulating member from the midpoint of the spark gap to the cap adjacent the cathode. The outer metallic surfaces of the device may be coated with a hydrogen-impermeable coating to lengthen the shelf life and operating life of the device. The device breaks down at about 1,700 volts for input voltage rates up to 570 volts/millisecond and allows peak discharge currents of up to 3,000 amperes from a 0.3 microfarad energy storage capacitor for more than 1,000 operations. 3 figs.

  12. Spark gap device for precise switching

    DOEpatents

    Boettcher, Gordon E.

    1984-01-01

    A spark gap device for precise switching of an energy storage capacitor into an exploding bridge wire load is disclosed. Niobium electrodes having a melting point of 2,415 degrees centrigrade are spaced apart by an insulating cylinder to define a spark gap. The electrodes are supported by conductive end caps which, together with the insulating cylinder, form a hermetically sealed chamber filled with an inert, ionizable gas, such as pure xenon. A quantity of solid radioactive carbon-14 within the chamber adjacent the spark gap serves as a radiation stabilizer. The sides of the electrodes and the inner wall of the insulating cylinder are spaced apart a sufficient distance to prevent unwanted breakdown initiation. A conductive sleeve may envelop the outside of the insulating member from the midpoint of the spark gap to the cap adjacent the cathode. The outer metallic surfaces of the device may be coated with a hydrogen-impermeable coating to lengthen the shelf life and operating life of the device. The device breaks down at about 1,700 volts for input voltage rates up to 570 volts/millisecond and allows peak discharge currents of up to 3,000 amperes from a 0.3 microfarad energy storage capacitor for more than 1,000 operations.

  13. 40-Gbit/s all-optical circulating shift register with an inverter.

    PubMed

    Hall, K L; Donnelly, J P; Groves, S H; Fennelly, C I; Bailey, R J; Napoleone, A

    1997-10-01

    We report what is believed to be the first demonstration of an all-optical circulating shift register using an ultrafast nonlinear interferometer with a polarization-insensitive semiconductor optical amplifier as the nonlinear switching element. The device operates at 40 Gbits/s, to our knowledge the highest speed demonstrated to date. Also, the demonstration proves the cascadability of the ultrafast nonlinear interferometric switch.

  14. Electrocaloric devices based on thin-film heat switches

    NASA Astrophysics Data System (ADS)

    Epstein, Richard I.; Malloy, Kevin J.

    2009-09-01

    We describe a new approach to refrigeration, heat pumping, and electrical generation that allows one to exploit the attractive properties of thin films of electrocaloric materials. Layers of electrocaloric material coupled with thin-film heat switches can work as either refrigerators and heat pumps or electrical generators, depending on the phasing of the applied voltages and heat switching. With heat switches based on thin layers of liquid crystals, the efficiency of electrocaloric thin-film devices can be at least as high as that of current thermoelectric devices. Advanced heat switches that may use carbon nanotubes would enable thin-film refrigerators and generators to outperform conventional vapor-compression devices.

  15. All-optical, all-fiber circulating shift register with an inverter.

    PubMed

    Whitaker, N A; Gabriel, M C; Avramopoulos, H; Huang, A

    1991-12-15

    An all-optical fiber Sagnac interferometer switch and erbium amplifier have been combined to form an all-optical 254-bit circulating shift register with an inverter. This simple optical loop memory demonstrates the cascadability of Sagnac interferometer switches.

  16. Polymeric components for all-optical networks

    NASA Astrophysics Data System (ADS)

    Eldada, Louay A.; Beeson, Karl W.; Pant, Deepti; Blomquist, Robert; Shacklette, Lawrence W.; McFarland, Michael J.

    2000-04-01

    All-optical networks that exhibit high speed, high capacity, scalability, configurability, and transparency are becoming a reality through the exploitation of the unique properties of fiber and integrated optics. An advanced polymeric waveguide technology was developed for affordable passive and active integrated optical elements that address the needs of these networks. We engineered high-performance organic polymers that can be readily made into photonic circuits of controlled numerical apertures and geometries. These materials are formed from highly-crosslinked acrylate monomers with specific linkages that determine properties such as flexibility, robustness, optical loss, thermal stability, and humidity resistance. These monomers are intermiscible, providing for precise continuous adjustment of the refractive index over a wide range. In polymer form, they exhibit state-of-the-art optical loss values, suppressed polarization effects, and exceptional environmental stability. A wide range of rigid and flexible substrates can be used. The devices we describe include demultiplexers, tunable wavelength filters, digital optical switches, and variable optical attenuators.

  17. Electrocaloric devices based on thini-film heat switches

    SciTech Connect

    Epstein, Richard I; Malloy, Kevin J

    2009-01-01

    We describe a new approach to refrigeration and electrical generation that exploits the attractive properties of thin films of electrocaloric materials. Layers of electrocaloric material coupled with thin-film heat switches can work as either refrigerators or electrical generators, depending on the phasing of the applied voltages and heat switching. With heat switches based on thin layers of liquid crystals, the efficiency of these thin-film heat engines can be at least as high as that of current thermoelectric devices. Advanced heat switches would enable thin-film heat engines to outperform conventional vaporcompression devices.

  18. Nanoscale molecular-switch devices fabricated by imprint lithography

    NASA Astrophysics Data System (ADS)

    Chen, Yong; Ohlberg, Douglas A. A.; Li, Xuema; Stewart, Duncan R.; Stanley Williams, R.; Jeppesen, Jan O.; Nielsen, Kent A.; Stoddart, J. Fraser; Olynick, Deirdre L.; Anderson, Erik

    2003-03-01

    Nanoscale molecular-electronic devices comprising a single molecular monolayer of bistable [2]rotaxanes sandwiched between two 40-nm metal electrodes were fabricated using imprint lithography. Bistable current-voltage characteristics with high on-off ratios and reversible switching properties were observed. Such devices may function as basic elements for future ultradense electronic circuitry.

  19. Electric energy saving two position combination switching device

    SciTech Connect

    Andrews, P.

    1985-10-22

    In one form of the present preferred embodiment of the present invention it relates to a two-position feed-thru electric line cord piercing switching combination, of the rotary and even the rocker type, which saves electric energy by use of a half-wave diode rectifying means. The electric energy saving, two-position, combination switching means having only two electrical passing switching positions and thereby having no electrical ''off'' position. The switch will alternatingly provide either an electrical half-wave ''dim'' or an electrical full-wave ''on'' illumination to a single filament lamp, string of Christmas tree lamps and the like, and will even provide eight separate combinations, of one OFF abd three separate illuminations, when electrically connected ahead of a, for example, conventional LEVITON rotary 4-position lamp socket switching means which uses a conventional 3-way incandescent lamp member which is removable inserted into the lamp socket portion thereof. MICRO, CHERRY, toggle, rocker, push-button and the like, line cord non-piercing two-position switches may be used in other forms of the combination switching device or invention. The half-wave diode rectifying means is electrically connected shuntingly between and/or across substantially to two electrical contact members of the conductor wire-piercing and the wire non-piercing type of switching means. This construction results in automatic elimination of the electrical ''off'' position for generally any type 2 2-position ''off'' and ''on'' switching means.

  20. Preparation, crystal structure, spectrographic characterization, thermal and third-order nonlinear optical properties of benzyltriethylammonium bis(2-thioxo-1,3-dithiole-4,5-dithiolato)aurate(III) for all-optical switching applications

    NASA Astrophysics Data System (ADS)

    Wang, X. Q.; Ren, Q.; Chen, J. W.; Yu, W. T.; Fang, H. L.; Li, T. B.; Cong, H. J.; Liu, X. T.; Zhu, L. Y.; Zhang, G. H.; Xu, D.

    2011-05-01

    The preparation and crystal structure of a novel nonlinear optical organometallic crystal, benzyltriethylammonium bis(2-thioxo-1,3-dithiole-4,5-dithiolato)aurate(III) (BTEAADT), are described. The crystal was characterized by elemental analyses, infrared and X-ray powder diffraction spectroscopy, thermal analysis and optical absorption. A typical highly optical quality single crystal with dimensions of about 30 × 3 × 3 mm 3 has been grown from an acetone solution by the solvent evaporation method. The specific heat of the crystal was measured to be 692.0 J mol -1 K -1 at 300 K. The thin film of BTEAADT doped into poly(methyl methacrylate) (PMMA) with a concentration of 1 wt% was prepared using spin-coating method. The linear properties of the thin film were investigated by a prism coupler. The third-order nonlinear optical properties of BTEAADT doped PMMA film was investigated by using the laser Z-scan technique with 20 ps pulses at 1064 nm. A large negative nonlinear refraction and no nonlinear absorption have been observed. The refractive index and the thickness of the film are 1.4682 and 1.15 μm, respectively. The nonlinear refractive index is calculated to be -3.978 × 10 -15m 2/W for the film. At the same time, the nonlinear absorption coefficient is 0. Two figures of merit, W and T of the film, were calculated to be |W| = 1.07 > 1, |T| = 0 << 1. All results show that BTEAADT crystal has very potential applications on all-optical switching.

  1. All-optical reservoir computing.

    PubMed

    Duport, François; Schneider, Bendix; Smerieri, Anteo; Haelterman, Marc; Massar, Serge

    2012-09-24

    Reservoir Computing is a novel computing paradigm that uses a nonlinear recurrent dynamical system to carry out information processing. Recent electronic and optoelectronic Reservoir Computers based on an architecture with a single nonlinear node and a delay loop have shown performance on standardized tasks comparable to state-of-the-art digital implementations. Here we report an all-optical implementation of a Reservoir Computer, made of off-the-shelf components for optical telecommunications. It uses the saturation of a semiconductor optical amplifier as nonlinearity. The present work shows that, within the Reservoir Computing paradigm, all-optical computing with state-of-the-art performance is possible.

  2. All-optical symmetric ternary logic gate

    NASA Astrophysics Data System (ADS)

    Chattopadhyay, Tanay

    2010-09-01

    Symmetric ternary number (radix=3) has three logical states (1¯, 0, 1). It is very much useful in carry free arithmetical operation. Beside this, the logical operation using this type of number system is also effective in high speed computation and communication in multi-valued logic. In this literature all-optical circuits for three basic symmetrical ternary logical operations (inversion, MIN and MAX) are proposed and described. Numerical simulation verifies the theoretical model. In this present scheme the different ternary logical states are represented by different polarized state of light. Terahertz optical asymmetric demultiplexer (TOAD) based interferometric switch has been used categorically in this manuscript.

  3. Resistive switching characteristics and mechanisms in silicon oxide memory devices

    NASA Astrophysics Data System (ADS)

    Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Zhou, Fei; Wu, Xiaohan; Chen, Yen-Ting; Wang, Yanzhen; Xue, Fei; Lee, Jack C.

    2016-05-01

    Intrinsic unipolar SiOx-based resistance random access memories (ReRAM) characterization, switching mechanisms, and applications have been investigated. Device structures, material compositions, and electrical characteristics are identified that enable ReRAM cells with high ON/OFF ratio, low static power consumption, low switching power, and high readout-margin using complementary metal-oxide semiconductor transistor (CMOS)-compatible SiOx-based materials. These ideas are combined with the use of horizontal and vertical device structure designs, composition optimization, electrical control, and external factors to help understand resistive switching (RS) mechanisms. Measured temperature effects, pulse response, and carrier transport behaviors lead to compact models of RS mechanisms and energy band diagrams in order to aid the development of computer-aided design for ultralarge-v scale integration. This chapter presents a comprehensive investigation of SiOx-based RS characteristics and mechanisms for the post-CMOS device era.

  4. Multilevel conductance switching of memory device through photoelectric effect.

    PubMed

    Ye, Changqing; Peng, Qian; Li, Mingzhu; Luo, Jia; Tang, Zhengming; Pei, Jian; Chen, Jianming; Shuai, Zhigang; Jiang, Lei; Song, Yanlin

    2012-12-12

    A photoelectronic switch of a multilevel memory device has been achieved using a meta-conjugated donor-bridge-acceptor (DBA) molecule. Such a DBA optoelectronic molecule responds to both the optical and electrical stimuli. The device exhibits good electrical bistable switching behaviors under dark, with a large ON/OFF ratio more than 10(6). In cooperation with the UV light, photoelectronic ternary states are addressable in a bistable switching system. On the basis of the CV measurement, charge carriers transport modeling, quantum chemical calculation, and absorption spectra analysis, the mechanism of the DBA memory is suggested to be attributed to the substep charge transfer transition process. The capability of tailoring photoelectrical properties is a very promising strategy to explore the multilevel storage, and it will give a new opportunity for designing multifunctional devices.

  5. Integrated all-optical infrared switchable plasmonic quantum cascade laser.

    PubMed

    Kohoutek, John; Bonakdar, Alireza; Gelfand, Ryan; Dey, Dibyendu; Nia, Iman Hassani; Fathipour, Vala; Memis, Omer Gokalp; Mohseni, Hooman

    2012-05-09

    We report a type of infrared switchable plasmonic quantum cascade laser, in which far field light in the midwave infrared (MWIR, 6.1 μm) is modulated by a near field interaction of light in the telecommunications wavelength (1.55 μm). To achieve this all-optical switch, we used cross-polarized bowtie antennas and a centrally located germanium nanoslab. The bowtie antenna squeezes the short wavelength light into the gap region, where the germanium is placed. The perturbation of refractive index of the germanium due to the free carrier absorption produced by short wavelength light changes the optical response of the antenna and the entire laser intensity at 6.1 μm significantly. This device shows a viable method to modulate the far field of a laser through a near field interaction.

  6. Light-switching behavior of non-mechanical shading devices

    SciTech Connect

    Koerner, W.; Hauck, S.; Scheller, H.; Beck, A.; Fricke, J.

    1994-12-31

    The authors investigated the light switching properties of non-mechanical shading devices, namely liquid crystal films and thermochromic layers. These systems can be switched between a transparent and a scattering state either by application of an electric voltage or surpassing a characteristic switching temperature. This paper presents data on the light scattering properties of such materials, i.e. the change in diffuse transmittance due to switching, the light scattering efficiency and the size of the scattering entities. Radiative transport calculations were performed in order to describe the light scattering properties of the liquid crystal films and to determine the optimization potential of these layers. For comparison data of an electrochromic layer, which has a transparent and an absorbing state, are shown.

  7. Device having two optical ports for switching applications

    DOEpatents

    Rosen, Ayre; Stabile, Paul J.

    1991-09-24

    A two-sided light-activatable semiconductor switch device having an optical port on each side thereof. The semiconductor device may be a p-i-n diode or of bulk intrinsic material. A two ported p-i-n diode, reverse-biased to "off" by a 1.3 kV dc power supply, conducted 192 A when activated by two 1 kW laser diode arrays, one for each optical port.

  8. Rapidly reconfigurable all-optical universal logic gate

    DOEpatents

    Goddard, Lynford L.; Bond, Tiziana C.; Kallman, Jeffrey S.

    2010-09-07

    A new reconfigurable cascadable all-optical on-chip device is presented. The gate operates by combining the Vernier effect with a novel effect, the gain-index lever, to help shift the dominant lasing mode from a mode where the laser light is output at one facet to a mode where it is output at the other facet. Since the laser remains above threshold, the speed of the gate for logic operations as well as for reprogramming the function of the gate is primarily limited to the small signal optical modulation speed of the laser, which can be on the order of up to about tens of GHz. The gate can be rapidly and repeatedly reprogrammed to perform any of the basic digital logic operations by using an appropriate analog optical or electrical signal at the gate selection port. Other all-optical functionality includes wavelength conversion, signal duplication, threshold switching, analog to digital conversion, digital to analog conversion, signal routing, and environment sensing. Since each gate can perform different operations, the functionality of such a cascaded circuit grows exponentially.

  9. Optically controlled multiple switching operations of DNA biopolymer devices

    SciTech Connect

    Hung, Chao-You; Tu, Waan-Ting; Lin, Yi-Tzu; Fruk, Ljiljana; Hung, Yu-Chueh

    2015-12-21

    We present optically tunable operations of deoxyribonucleic acid (DNA) biopolymer devices, where a single high-resistance state, write-once read-many-times memory state, write-read-erase memory state, and single low-resistance state can be achieved by controlling UV irradiation time. The device is a simple sandwich structure with a spin-coated DNA biopolymer layer sandwiched by two electrodes. Upon irradiation, the electrical properties of the device are adjusted owing to a phototriggered synthesis of silver nanoparticles in DNA biopolymer, giving rise to multiple switching scenarios. This technique, distinct from the strategy of doping of pre-formed nanoparticles, enables a post-film fabrication process for achieving optically controlled memory device operations, which provides a more versatile platform to fabricate organic memory and optoelectronic devices.

  10. Design of a fully compliant bistable micromechanism for switching devices

    NASA Astrophysics Data System (ADS)

    Chang, Hsin-An; Tsay, Jinni; Sung, Cheng-Kuo

    2001-11-01

    This paper proposes a design of a bistable micromechanism for the application of switching devices. The topology of a fully compliant four-bar mechanism is adopted herein. The central mass of the mechanism is employed as a carriage to carry switching components, such as mirror, electrical contact, etc. The equations that predict the existence of bistable states, the extreme positions of the motion range and the maximum stress states of members were derived. MUMPs provided by Cronos Integrated Microsystems fabricated the proposed micromechanisms for the purpose of verifying the theoretical predictions. Finally, an experimental rig was established. The bistable mechanisms were switched either by the probe or actuators to push the central mass. The experimental results demonstrated that the motions observed approximately met the predicted values.

  11. Analysis of all-optical IP routers

    NASA Astrophysics Data System (ADS)

    Tamil, Lakshman S.; Masetti, Francesco B.; McDermott, Thomas C.; Castanon, Gerardo; Ge, Andrew; Tancevski, Ljubisa

    1998-10-01

    The increased data traffic experienced today and the projected increase in the data traffic in the future demand exploration of novel approaches to IP transport such as transport of IP traffic over optics. The bimodal nature of the IP traffic short packets which are typical of transactional-style flows and large packets or bursts which are encountered in the transport of large data blocks requires, design of routers that are capable of routing packets with variable lengths efficiently. In this paper, we discuss the design aspects of such all-optical IP-switches. The broadcast and select architecture is a prime candidate for implementing optical IP routers. Construction of optical routers with buffering, wavelength conversion and multipath routing are considered. The merits and demerits of all these cases and the effect of buffer size, wavelength conversion and multiple-path routing on the blocking probability and probability of packet loss are discussed.

  12. Picosecond photoconductive devices for 10 Gbit/s optoelectronic switching

    NASA Astrophysics Data System (ADS)

    Veith, G.

    1985-03-01

    Semiconductor materials with a high density of recombination and trapping centers exhibit extremely short carrier lifetimes in the order of 1 to 100 ps and have been the base for the development of high speed optoelectronic switches. These devices are activated by picosecond laser pulses and can be driven nearly free of jitter with respect to the optical excitation pulses. They show some unique properties as picosecond risetimes and response times and can be operated within a relatively high dynamical range (10-5 to 10 sub 4 V) (0.00001 to 0.0001 V). A review is given on the wide field of possible applications of the ultrafast photoconductive switches. They can be used as photodetectors for picosecond light pulses as well as sampling gates for the characterization of high speed electronic and optoelectronic devices. In some experiments which are discussed more in detail the author demonstrates the capability of this type of photoconductive switches for the generation of picosecond infrared pulse trains in laser diodes and for the generation of high-bit rate electrical codes for use in Gbit/s optical communication and sensing systems, for logical switching and for testing purposes of high speed electronic instrumentations.

  13. Electro-optical switching and memory display device

    NASA Astrophysics Data System (ADS)

    Skotheim, T. A.; Ogrady, W. E.; Linkous, C. A.

    1983-12-01

    An electro-optical display device is described having a housing including one transparent wall and at least one other wall. Counter electrodes are positioned on the transparent wall and display electrodes are positioned on the other wall with both electrodes in electrically conductive relationship with an electrolyte. Circuits means are connected to the display and counter electrodes to apply different predetermined control potentials between them. The display electrodes are covered with a thin electrically conductive polymer film that is characterized according to the invention by having embedded in it pigment molecules as counter ions. The display device is operable to be switched to a plurality of different visual color states at an exceptionally rapid switching rate while each of the color states is characterized by possessing good color intensity and definition.

  14. Electro-optical switching and memory display device

    DOEpatents

    Skotheim, Terje A.; O'Grady, William E.; Linkous, Clovis A.

    1986-01-01

    An electro-optical display device having a housing with wall means including one transparent wall and at least one other wall. Counter electrodes are positioned on the transparent wall and display electrodes are positioned on the other wall with both electrodes in electrically conductive relationship with an electrolyte. Circuit means are connected to the display and counter electrodes to apply different predetermined control potentials between them. The display electrodes are covered with a thin electrically conductive polymer film that is characterized according to the invention by having embedded in it pigment molecules as counter ions. The display device is operable to be switched to a plurality of different visual color states at an exceptionally rapid switching rate while each of the color states is characterized by possessing good color intensity and definition.

  15. Electro-optical switching and memory display device

    DOEpatents

    Skotheim, T.A.; O'Grady, W.E.; Linkous, C.A.

    1983-12-29

    An electro-optical display device having a housing with wall means including one transparent wall and at least one other wall. Counter electrodes are positioned on the transparent wall and display electrodes are positioned on the other wall with both electrodes in electrically conductive relationship with an electrolyte. Circuits means are connected to the display and counter electrodes to apply different predetermined control potentials between them. The display electrodes are covered with a thin electrically conductive polymer film that is characterized according to the invention by having embedded in it pigment molecules as counter ions. The display device is operable to be switched to a plurality of different visual color states at an exceptionally rapid switching rate while each of the color states is characterized by possessing good color intensity and definition.

  16. All-optical transistor- and diode-action and logic gates based on anisotropic nonlinear responsive liquid crystal.

    PubMed

    Wang, Cheng-Yu; Chen, Chun-Wei; Jau, Hung-Chang; Li, Cheng-Chang; Cheng, Chiao-Yu; Wang, Chun-Ta; Leng, Shi-Ee; Khoo, Iam-Choon; Lin, Tsung-Hsien

    2016-08-05

    In this paper, we show that anisotropic photosensitive nematic liquid crystals (PNLC) made by incorporating anisotropic absorbing dyes are promising candidates for constructing all-optical elements by virtue of the extraordinarily large optical nonlinearity of the nematic host. In particular, we have demonstrated several room-temperature 'prototype' PNLC-based all-optical devices such as optical diode, optical transistor and all primary logic gate operations (OR, AND, NOT) based on such optical transistor. Owing to the anisotropic absorption property and the optical activity of the twist alignment nematic cell, spatially non-reciprocal transmission response can be obtained within a sizeable optical isolation region of ~210 mW. Exploiting the same mechanisms, a tri-terminal configuration as an all-optical analogue of a bipolar junction transistor is fabricated. Its ability to be switched by an optical field enables us to realize an all-optical transistor and demonstrate cascadability, signal fan-out, logic restoration, and various logical gate operations such as OR, AND and NOT. Due to the possibility of synthesizing anisotropic dyes and wide ranging choice of liquid crystals nonlinear optical mechanisms, these all-optical operations can be optimized to have much lower thresholds and faster response speeds. The demonstrated capabilities of these devices have shown great potential in all-optical control system and photonic integrated circuits.

  17. All-optical transistor- and diode-action and logic gates based on anisotropic nonlinear responsive liquid crystal

    PubMed Central

    Wang, Cheng-Yu; Chen, Chun-Wei; Jau, Hung-Chang; Li, Cheng-Chang; Cheng, Chiao-Yu; Wang, Chun-Ta; Leng, Shi-Ee; Khoo, Iam-Choon; Lin, Tsung-Hsien

    2016-01-01

    In this paper, we show that anisotropic photosensitive nematic liquid crystals (PNLC) made by incorporating anisotropic absorbing dyes are promising candidates for constructing all-optical elements by virtue of the extraordinarily large optical nonlinearity of the nematic host. In particular, we have demonstrated several room-temperature ‘prototype’ PNLC-based all-optical devices such as optical diode, optical transistor and all primary logic gate operations (OR, AND, NOT) based on such optical transistor. Owing to the anisotropic absorption property and the optical activity of the twist alignment nematic cell, spatially non-reciprocal transmission response can be obtained within a sizeable optical isolation region of ~210 mW. Exploiting the same mechanisms, a tri-terminal configuration as an all-optical analogue of a bipolar junction transistor is fabricated. Its ability to be switched by an optical field enables us to realize an all-optical transistor and demonstrate cascadability, signal fan-out, logic restoration, and various logical gate operations such as OR, AND and NOT. Due to the possibility of synthesizing anisotropic dyes and wide ranging choice of liquid crystals nonlinear optical mechanisms, these all-optical operations can be optimized to have much lower thresholds and faster response speeds. The demonstrated capabilities of these devices have shown great potential in all-optical control system and photonic integrated circuits. PMID:27491391

  18. All-optical transistor- and diode-action and logic gates based on anisotropic nonlinear responsive liquid crystal

    NASA Astrophysics Data System (ADS)

    Wang, Cheng-Yu; Chen, Chun-Wei; Jau, Hung-Chang; Li, Cheng-Chang; Cheng, Chiao-Yu; Wang, Chun-Ta; Leng, Shi-Ee; Khoo, Iam-Choon; Lin, Tsung-Hsien

    2016-08-01

    In this paper, we show that anisotropic photosensitive nematic liquid crystals (PNLC) made by incorporating anisotropic absorbing dyes are promising candidates for constructing all-optical elements by virtue of the extraordinarily large optical nonlinearity of the nematic host. In particular, we have demonstrated several room-temperature ‘prototype’ PNLC-based all-optical devices such as optical diode, optical transistor and all primary logic gate operations (OR, AND, NOT) based on such optical transistor. Owing to the anisotropic absorption property and the optical activity of the twist alignment nematic cell, spatially non-reciprocal transmission response can be obtained within a sizeable optical isolation region of ~210 mW. Exploiting the same mechanisms, a tri-terminal configuration as an all-optical analogue of a bipolar junction transistor is fabricated. Its ability to be switched by an optical field enables us to realize an all-optical transistor and demonstrate cascadability, signal fan-out, logic restoration, and various logical gate operations such as OR, AND and NOT. Due to the possibility of synthesizing anisotropic dyes and wide ranging choice of liquid crystals nonlinear optical mechanisms, these all-optical operations can be optimized to have much lower thresholds and faster response speeds. The demonstrated capabilities of these devices have shown great potential in all-optical control system and photonic integrated circuits.

  19. A Microfluidic Flow-switching Device Powered by Vorticella Stalk

    NASA Astrophysics Data System (ADS)

    Nagai, M.; Tanizaki, K.; Hayasaka, Y.; Kawashima, T.; Shibata, T.

    2013-04-01

    Bioactuators are an attractive alternative for mechanical components of MEMS devices. We propose a flow-switching device active to calcium ion based on bioactuator of Vorticella. We develop a fundamental procedure for immobilization of Vorticella in a microfluidic chamber and control of contraction and extension of stalks. Cells were trapped in microfluidic chambers and allowed to adhere. After treatment of cells, stalks were contracted and extended by injecting solutions. Flow speed changed during the motion. Our developed method presents a strategy for application of bioactuator.

  20. Materials growth and characterization of thermoelectric and resistive switching devices

    NASA Astrophysics Data System (ADS)

    Norris, Kate J.

    In the 74 years since diode rectifier based radar technology helped the allied forces win WWII, semiconductors have transformed the world we live in. From our smart phones to semiconductor-based energy conversion, semiconductors touch every aspect of our lives. With this thesis I hope to expand human knowledge of semiconductor thermoelectric devices and resistive switching devices through experimentation with materials growth and subsequent materials characterization. Metal organic chemical vapor deposition (MOCVD) was the primary method of materials growth utilized in these studies. Additionally, plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD),ion beam sputter deposition, reactive sputter deposition and electron-beam (e-beam) evaporation were also used in this research for device fabrication. Scanning electron microscopy (SEM), Transmission electron microscopy (TEM), and Electron energy loss spectroscopy (EELS) were the primary characterization methods utilized for this research. Additional device and materials characterization techniques employed include: current-voltage measurements, thermoelectric measurements, x-ray diffraction (XRD), reflection absorption infra-red spectroscopy (RAIRS), atomic force microscopy (AFM), photoluminescence (PL), and raman spectroscopy. As society has become more aware of its impact on the planet and its limited resources, there has been a push toward developing technologies to sustainably produce the energy we need. Thermoelectric devices convert heat directly into electricity. Thermoelectric devices have the potential to save huge amounts of energy that we currently waste as heat, if we can make them cost-effective. Semiconducting thin films and nanowires appear to be promising avenues of research to attain this goal. Specifically, in this work we will explore the use of ErSb thin films as well as Si and InP nanowire networks for thermoelectric applications. First we will discuss the growth of

  1. Plasmonic enhancement of ultrafast all-optical magnetization reversal

    NASA Astrophysics Data System (ADS)

    Kochergin, Vladimir; Neely, Lauren N.; Allin, Leigh J.; Kochergin, Eugene V.; Wang, Kang L.

    2011-10-01

    Ultrafast all optical magnetization switching in GdFeCo layers on the basis of Inverse Faraday Effect (IFE) was demonstrated recently and suggested as a possible path toward next generation magnetic data storage medium with much faster writing time. However, to date, the demonstrations of ultrafast all-optical magnetization switching were performed with powerful femtosecond lasers, hardly useful for practical applications in data storage and data processing. Here we show that utilization of IFE enhancement in plasmonic nanostructures enables fast all-optical magnetization switching with smaller/cheaper laser sources with longer pulse durations. Our modeling results predict significant enhancement of IFE around all major types of plasmonic nanostructures for a circularly polarized incident light. Unlike the IFE in uniform bulk materials, nonzero value of IFE is predicted in plasmonic nanostructures even with a linearly polarized excitation. Experimentally, all-optical magnetization switching at 20 times lower laser fluence and roughly 100 times lower value of laser fluence/pulse duration ratio is demonstrated in plasmonic samples to verify the model predictions. The path to achieve higher levels of enhancement experimentally is discussed.

  2. A New All-Optical Imaging Scheme based on QWIP technology

    NASA Astrophysics Data System (ADS)

    Zeng, Debing; Chen, Gang; Martini, Rainer

    2006-03-01

    Infrared imaging applications have gained increasing interest over the recent decades due to favorable light propagation, night imaging as well as chemical sensing applications. However, the scalability of the existing techniques towards high resolution in the multi-megapixel range is one of the major challenges in today's IR imaging technologies. Here we present an alternative solution using an all-optical wavelength conversion scheme. QWIP has been successfully proven their potential in IR imaging applications. Yet the fundamental conversion process from IR light to electric current has been one of the major restrictions in such system. To overcome this problem we propose the use of an all-optical conversion scheme, which utilizes an interband resonant optical NIR beam to probe the electrical population of the QW structure. In this methodology the incident MIR radiation changes the occupation of the QWs, which in turn influences the NIR transmission. Hence the irradiated MIR images can be probed by spatially resolved measurement of the NIR transmission, as has been demonstrated by Nada et al. for all-optical switching purposes. In this talk we present an implementation scheme of the all-optical QWIP readout technique together with theoretical calculations of the sensitivity of the proposed device and its temperature dependence. First experimental results will be presented also. The Authors thankfully acknowledge financial support by US Army, Picatinny Arsenal.

  3. Design of polarization encoded all-optical 4-valued MAX logic gate and its applications

    NASA Astrophysics Data System (ADS)

    Chattopadhyay, Tanay; Nath Roy, Jitendra

    2013-07-01

    Quaternary maximum (QMAX) gate is one type of multi-valued logic gate. An all-optical scheme of polarization encoded quaternary (4-valued) MAX logic gate with the help of Terahertz Optical Asymmetric Demultiplexer (TOAD) based fiber interferometric switch is proposed and described. For the quaternary information processing in optics, the quaternary number (0, 1, 2, 3) can be represented by four discrete polarized states of light. Numerical simulation result confirming the described methods is given in this paper. Some applications of MAX gate in logical operation and memory device are also given.

  4. All-Optical Wavelength Conversion by Picosecond Burst Absorption in Colloidal PbS Quantum Dots.

    PubMed

    Geiregat, Pieter; Houtepen, Arjan J; Van Thourhout, Dries; Hens, Zeger

    2016-01-26

    All-optical approaches to change the wavelength of a data signal are considered more energy- and cost-effective than current wavelength conversion schemes that rely on back and forth switching between the electrical and optical domains. However, the lack of cost-effective materials with sufficiently adequate optoelectronic properties hampers the development of this so-called all-optical wavelength conversion. Here, we show that the interplay between intraband and band gap absorption in colloidal quantum dots leads to a very strong and ultrafast modulation of the light absorption after photoexcitation in which slow components linked to exciton recombination are eliminated. This approach enables all-optical wavelength conversion at rates matching state-of-the-art convertors in speed, yet with cost-effective solution-processable materials. Moreover, the stronger light-matter interaction allows for implementation in small-footprint devices with low switching energies. Being a generic property, the demonstrated effect opens a pathway toward low-power integrated photonics based on colloidal quantum dots as the enabling material.

  5. Self-assembled nanostructured resistive switching memory devices fabricated by templated bottom-up growth

    PubMed Central

    Song, Ji-Min; Lee, Jang-Sik

    2016-01-01

    Metal-oxide-based resistive switching memory device has been studied intensively due to its potential to satisfy the requirements of next-generation memory devices. Active research has been done on the materials and device structures of resistive switching memory devices that meet the requirements of high density, fast switching speed, and reliable data storage. In this study, resistive switching memory devices were fabricated with nano-template-assisted bottom up growth. The electrochemical deposition was adopted to achieve the bottom-up growth of nickel nanodot electrodes. Nickel oxide layer was formed by oxygen plasma treatment of nickel nanodots at low temperature. The structures of fabricated nanoscale memory devices were analyzed with scanning electron microscope and atomic force microscope (AFM). The electrical characteristics of the devices were directly measured using conductive AFM. This work demonstrates the fabrication of resistive switching memory devices using self-assembled nanoscale masks and nanomateirals growth from bottom-up electrochemical deposition. PMID:26739122

  6. Self-assembled nanostructured resistive switching memory devices fabricated by templated bottom-up growth.

    PubMed

    Song, Ji-Min; Lee, Jang-Sik

    2016-01-07

    Metal-oxide-based resistive switching memory device has been studied intensively due to its potential to satisfy the requirements of next-generation memory devices. Active research has been done on the materials and device structures of resistive switching memory devices that meet the requirements of high density, fast switching speed, and reliable data storage. In this study, resistive switching memory devices were fabricated with nano-template-assisted bottom up growth. The electrochemical deposition was adopted to achieve the bottom-up growth of nickel nanodot electrodes. Nickel oxide layer was formed by oxygen plasma treatment of nickel nanodots at low temperature. The structures of fabricated nanoscale memory devices were analyzed with scanning electron microscope and atomic force microscope (AFM). The electrical characteristics of the devices were directly measured using conductive AFM. This work demonstrates the fabrication of resistive switching memory devices using self-assembled nanoscale masks and nanomateirals growth from bottom-up electrochemical deposition.

  7. All-optical transistors and logic gates using a parity-time-symmetric Y-junction: Design and simulation

    SciTech Connect

    Ding, Shulin; Wang, Guo Ping

    2015-09-28

    Classical nonlinear or quantum all-optical transistors are dependent on the value of input signal intensity or need extra co-propagating beams. In this paper, we present a kind of all-optical transistors constructed with parity-time (PT)-symmetric Y-junctions, which perform independently on the value of signal intensity in an unsaturated gain case and can also work after introducing saturated gain. Further, we show that control signal can switch the device from amplification of peaks in time to transformation of peaks to amplified troughs. By using these PT-symmetric Y-junctions with currently available materials and technologies, we can implement interesting logic functions such as NOT and XOR (exclusive OR) gates, implying potential applications of such structures in designing optical logic gates, optical switches, and signal transformations or amplifications.

  8. Ultrafast all-optical modulation with hyperbolic metamaterial integrated in Si photonic circuitry.

    PubMed

    Neira, Andres D; Wurtz, Gregory A; Ginzburg, Pavel; Zayats, Anatoly V

    2014-05-05

    The integration of optical metamaterials within silicon integrated photonic circuitry bears significantly potential in the design of low-power, nanoscale footprint, all-optical functionalities. We propose a novel concept and provide detailed analysis of an on-chip ultrafast all-optical modulator based on an hyperbolic metamaterial integrated in a silicon waveguide. The anisotropic metamaterial based on gold nanorods is placed on top of the silicon waveguide to form a modulator with a 300x440x600 nm(3) footprint. For the operating wavelength of 1.5 μm, the optimized geometry of the device has insertion loss of about 5 dB and a modulation depth of 35% with a sub-ps switching rate. The switching energy estimated from nonlinear transient dynamic numerical simulations is 3.7 pJ/bit when the transmission is controlled optically at a wavelength of 532 nm, resonant with the transverse plasmonic mode of the metamaterial. The switching mechanism is based on the control of the hybridization of eigenmodes in the metamaterial slab and the Si waveguide.

  9. Electrically Switching Bistability of a Chiral Quasi-Homeotropic Liquid Crystal Device with Low Driving Voltage

    NASA Astrophysics Data System (ADS)

    Hsieh, Chih-Yung; Chen, Shu-Hsia

    2003-11-01

    We report a new electrically switching bistable chiral quasi-homeotropic liquid crystal device with low driving voltage. This device is operated from the initial twisted-homeotropic state to either +90° or -270° twisted static state showing dark and bright transmittances, respectively, using different switching processes. The critical applied voltage to achieve the switching bistability of our device is only 4.3 V, which is approximately twice its threshold voltage for Freedericksz transition. In addition, the switching characteristics of this device with different driving waveforms are also investigated in this paper.

  10. Photonic encryption using all optical logic.

    SciTech Connect

    Blansett, Ethan L.; Schroeppel, Richard Crabtree; Tang, Jason D.; Robertson, Perry J.; Vawter, Gregory Allen; Tarman, Thomas David; Pierson, Lyndon George

    2003-12-01

    With the build-out of large transport networks utilizing optical technologies, more and more capacity is being made available. Innovations in Dense Wave Division Multiplexing (DWDM) and the elimination of optical-electrical-optical conversions have brought on advances in communication speeds as we move into 10 Gigabit Ethernet and above. Of course, there is a need to encrypt data on these optical links as the data traverses public and private network backbones. Unfortunately, as the communications infrastructure becomes increasingly optical, advances in encryption (done electronically) have failed to keep up. This project examines the use of optical logic for implementing encryption in the photonic domain to achieve the requisite encryption rates. In order to realize photonic encryption designs, technology developed for electrical logic circuits must be translated to the photonic regime. This paper examines two classes of all optical logic (SEED, gain competition) and how each discrete logic element can be interconnected and cascaded to form an optical circuit. Because there is no known software that can model these devices at a circuit level, the functionality of the SEED and gain competition devices in an optical circuit were modeled in PSpice. PSpice allows modeling of the macro characteristics of the devices in context of a logic element as opposed to device level computational modeling. By representing light intensity as voltage, 'black box' models are generated that accurately represent the intensity response and logic levels in both technologies. By modeling the behavior at the systems level, one can incorporate systems design tools and a simulation environment to aid in the overall functional design. Each black box model of the SEED or gain competition device takes certain parameters (reflectance, intensity, input response), and models the optical ripple and time delay characteristics. These 'black box' models are interconnected and cascaded in an

  11. Development of a prototype T-shaped fast switching device for electron cyclotron current drive systems

    NASA Astrophysics Data System (ADS)

    Sekiguchi, Kenji; Nagashima, Koji; Honzu, Toshihiko; Saigusa, Mikio; Oda, Yasuhisa; Takahashi, Koji; Sakamoto, Keishi

    2016-09-01

    A T-shaped high-power switching device composed of circular corrugated waveguides with three ports and double dielectric disks made of sapphire was proposed as a fast switching device based on a new principle in electron cyclotron current drive systems. This switching device has the advantages of operating at a fixed frequency and being compact. The design of the prototype switch was obtained by numerical simulations using a finite-difference time-domain (FDTD) method. The size of these components was optimized for the frequency band of 170 GHz. Low-power tests were carried out in a cross-shaped model.

  12. All-optical flip-flop based on coupled SOA-PSW

    NASA Astrophysics Data System (ADS)

    Wang, Lina; Wang, Yongjun; Wu, Chen; Wang, Fu

    2016-12-01

    The semiconductor optical amplifier (SOA) has obvious advantages in all-optical signal processing, because of the simple structure, strong non-linearity, and easy integration. A variety of all-optical signal processing functions, such as all-optical wavelength conversion, all-optical logic gates and all-optical sampling, can be completed by SOA. So the SOA has been widespread concerned in the field of all-optical signal processing. Recently, the polarization rotation effect of SOA is receiving considerable interest, and many researchers have launched numerous research work utilizing this effect. In this paper, a new all-optical flip-flop structure using polarization switch (PSW) based on polarization rotation effect of SOA is presented.

  13. In-situ observation of self-regulated switching behavior in WO{sub 3-x} based resistive switching devices

    SciTech Connect

    Hong, D. S.; Wang, W. X.; Chen, Y. S. Sun, J. R.; Shen, B. G.

    2014-09-15

    The transmittance of tungsten oxides can be adjusted by oxygen vacancy (V{sub o}) concentration due to its electrochromic property. Here, we report an in-situ observation of resistive switching phenomenon in the oxygen-deficient WO{sub 3-x} planar devices. Besides directly identifying the formation/rupture of dark-colored conductive filaments in oxide layer, the stripe-like WO{sub 3-x} device demonstrated self-regulated switching behavior during the endurance testing, resulting in highly consistent switching parameters after a stabilizing process. For very high V{sub o}s mobility was demonstrated in the WO{sub 3-x} film by the pulse experiment, we suggested that the electric-field-induced homogeneous migration of V{sub o}s was the physical origin for such unique switching characteristics.

  14. Resistive switching phenomena of HfO2 films grown by MOCVD for resistive switching memory devices

    NASA Astrophysics Data System (ADS)

    Kim, Hee-Dong; Yun, Min Ju; Kim, Sungho

    2016-08-01

    The resistive switching phenomena of HfO2 films grown by using metal organic chemical vapor deposition (MOCVD) was studied for the application of resistive random access memory (ReRAM) devices. In the fabricated Pt/HfO2/TiN memory cells, bipolar resistive switching characteristics were observed, and the set and reset states were measured to be as low as 7 μA and 4 μA, respectively, at V READ = 1 V. Regarding the resistive switching performance, stable resistive switching (RS) performance was observed under 40 repetitive dc cycles with small variations of set/reset voltages and the currents and good retention characteristics of over 105 s in both the low-resistance state (LRS) and the high-resistance state (HRS). These results show the possibility of using MOCVDgrown HfO2 films as a promising resistive switching materials for ReRAM applications.

  15. All-optical metamaterial modulators: Fabrication, simulation and characterization

    NASA Astrophysics Data System (ADS)

    Ku, Zahyun

    Artificially structured composite metamaterials consist of sub-wavelength sized structures that exhibit unusual electromagnetic properties not found in nature. Since the first experimental verification in 2000, metamaterials have drawn considerable attention because of their broad range of potential applications. One of the most attractive features of metamaterials is to obtain negative refraction, termed left-handed materials or negative-index metamaterials, over a limited frequency band. Negative-index metamaterials at near infrared wavelength are fabricated with circular, elliptical and rectangular holes penetrating through metal/dielectric/metal films. All three negative-index metamaterial structures exhibit similar figure of merit; however, the transmission is higher for the negative-index metamaterial with rectangular holes as a result of an improved impedance match with the substrate-superstrate (air-glass) combination. In general, the processing procedure to fabricate the fishnet structured negative-index metamaterials is to define the hole-size using a polymetric material, usually by lithographically defining polymer posts, followed by deposition of the constitutive materials and dissolution of the polymer (liftoff processing). This processing (fabrication of posts: multi-layer deposition: liftoff) often gives rise to significant sidewall-angle because materials accumulate on the tops of the posts that define the structure, each successive film deposition has a somewhat larger aperture on the bottom metamaterial film, giving rise to a nonzero sidewall-angle and to optical bianisotropy. Finally, we demonstrate a nanometer-scale, sub-picosecond metamaterial device capable of over terabit/second all-optical communication in the near infrared spectrum. We achieve a 600 fs device response by utilizing a regime of sub-picosecond carrier dynamics in amorphous silicon and ˜70% modulation in a path length of only 124 nm by exploiting the strong nonlinearities in

  16. Tantalum oxide nanoscale resistive switching devices: TEM/EELS study (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Norris, Kate J.; Zhang, Jiaming; Merced-Grafals, Emmanuelle; Musunuru, Srinitya; Zhang, Max; Samuels, Katy; Yang, Jianhua J.; Kobayashi, Nobuhiko P.

    2015-08-01

    The field of non-volatile memory devices has been boosted by resistive switching, a reversible change in electrical resistance of a dielectric layer through the application of a voltage potential. Tantalum oxide being one of the leading candidates for the dielectric component of resistance switching devices was investigated in this study. 55nm TaOx devices in all states were compared through cross sectional TEM techniques including HRTEM, EELS, and EFTEM and will be discussed in this presentation. Based on the chemical and physical features found in the cross sectioned nanodevices we will discuss the switching mechanism of these nanoscale devices.

  17. Status and Prospects of ZnO-Based Resistive Switching Memory Devices.

    PubMed

    Simanjuntak, Firman Mangasa; Panda, Debashis; Wei, Kung-Hwa; Tseng, Tseung-Yuen

    2016-12-01

    In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges.

  18. Status and Prospects of ZnO-Based Resistive Switching Memory Devices

    NASA Astrophysics Data System (ADS)

    Simanjuntak, Firman Mangasa; Panda, Debashis; Wei, Kung-Hwa; Tseng, Tseung-Yuen

    2016-08-01

    In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges.

  19. Exploring new dielectrics to improve switching speeds of carbon nanotube memory devices

    NASA Astrophysics Data System (ADS)

    Lucas, Kristin Anne

    2011-12-01

    The hysteresis in carbon nanotube field effect transistor's (CNTFET) current vs. gate voltage curves can be used for memory devices. Testing possible changes to device structure and design, could improve both their endurance and switching speed characteristics. Preliminary work in the literature shows that the type of dielectric layer is a large factor in the device switching speed. Here, a new dielectric layer and a different device design will be tested to study how they affect the device performance. Results are compared to devices that are commercially available.

  20. Temperature effect on the switching mechanism of molecular devices

    NASA Astrophysics Data System (ADS)

    di Ventra, M.; Kim, S.-G.; Pantelides, S. T.; Lang, N. D.

    2001-03-01

    Recent experiments have shown that benzene molecules with ligand substitutions act as switching devices when connected to gold electrodes, with enormous negative differential resistance at very low temperatures. [1] At higher temperatures, the current peak broadens, as expected, but it also shifts to substantially lower voltage, which would not be expected for phonon broadening mechanisms. [1] We show, by means of first-principles transport calculations, that such unusual behavior can be caused by the excitation of rotational modes of the ligands. [2] These modes have classical characteristics, i.e. the maximum excursion is dominant, while at the same time they have a significant effect on the energy levels responsible for resonant tunneling. [2] The proposed mechanism of ligand rotations is unique to molecules and accounts for the fact that the effect is not seen in semiconductor nanostructures. Work supported in part by DARPA/ONR Grant N00014-99-1-0351. [1] J. Chen, M.A. Reed, A.M. Rawlett, and J.M. Tour, Science 286, 1550 (1999). [2] M. Di Ventra, S.-G. Kim, S. T. Pantelides, N.D. Lang, Phys. Rev. Lett. (in press).

  1. Threshold Switching Characteristics of Nb/NbO 2 /TiN Vertical Devices

    SciTech Connect

    Wang, Yuhan; Comes, Ryan B.; Wolf, Stuart A.; Lu, Jiwei

    2016-01-01

    Nb/NbO2/TiN vertical structures were synthesized in-situ and patterned to devices with different contact areas. The devices exhibited threshold resistive switching with minimal hysteresis and a small EThreshold (60~90 kV/cm). The switching behavior was unipolar, and demonstrated good repeatability. A less sharp but still sizable change in the device resistance was observed up to 150 °C. It was found that the resistive switching without Nb capping layer exhibited the hysteretic behavior and much larger EThreshold (~250 kV/cm) likely due to a 2-3 nm surface Nb2O5 layer. The stable threshold switching behavior well above room temperature shows the potential applications of this device as an electronic switch.

  2. Thin film deposition of metal oxides in resistance switching devices: electrode material dependence of resistance switching in manganite films.

    PubMed

    Nakamura, Toshihiro; Homma, Kohei; Tachibana, Kunihide

    2013-02-15

    The electric-pulse-induced resistance switching in layered structures composed of polycrystalline Pr1-xCaxMnO3 (PCMO) sandwiched between Pt bottom electrode and top electrodes of various metals (metal/PCMO/Pt) was studied by direct current current-voltage (I-V) measurements and alternating current impedance spectroscopy. The I-V characteristics showed nonlinear, asymmetric, and hysteretic behavior in PCMO-based devices with top electrode of Al, Ni, and Ag, while no hysteretic behavior was observed in Au/PCMO/Pt devices. The PCMO-based devices with hysteretic I-V curves exhibited an electric-pulse-induced resistance switching between high and low resistance states. Impedance spectroscopy was employed to study the origin of the resistance switching. From comparison of the impedance spectra between the high and low resistance states, the resistance switching in the PCMO-based devices was mainly due to the resistance change in the interface between the film and the electrode. The electronic properties of the devices showed stronger correlation with the oxidation Gibbs free energy than with the work function of the electrode metal, which suggests that the interface impedance is due to an interfacial oxide layer of the electrode metal. The interface component observed by impedance spectroscopy in the Al/PCMO/Pt device might be due to Al oxide layer formed by oxidation of Al top electrode. It is considered that the interfacial oxide layer plays a dominant role in the bipolar resistance switching in manganite film-based devices.

  3. Demonstration and characterisation of a non-inverting all-optical read/write regenerative memory

    NASA Astrophysics Data System (ADS)

    Johnson, N. C.; Harrison, J. A.; Blow, K. J.

    2008-09-01

    An all-optical regenerative memory device using a single loop mirror and a semiconductor optical amplifier is experimentally demonstrated. This configuration has potential for a low power all-optical stable memory device with non-inverting characteristics where packets are stored by continuously injecting the regenerated data back into the loop.

  4. Bias voltage-controlled ferromagnetism switching in undoped zinc oxide thin film memory device

    NASA Astrophysics Data System (ADS)

    Li, S. S.; Chuang, Ricky W.; Su, Y. K.; Hu, Y. M.

    2016-12-01

    The bipolar resistive switching properties of Pt/ZnO/Pt multilayer film structure were investigated in this study. The M-H curves corresponding to the Pt/ZnO/Pt bipolar resistive switching device maintained at initial, high resistance, and low resistance states were individually obtained; all of which were ferromagnetic in nature. The strength of saturation magnetization of the device separately set at low resistance state, and the initial state was found to be strongest and weakest, respectively. Photoluminescence and X-ray photoelectron results indicate the presence of oxygen vacancies in the ZnO thin film. This resistive switching behavior accompanied with ferromagnetism could be attributed to the intrinsic defects. The results clearly demonstrate that the ferromagnetic switching capability of Pt/ZnO/Pt device is critically dependent on the bias voltage administered, which potentially allows this device to have magneto-electrical device applications.

  5. Large-scale photonic integration for advanced all-optical routing functions

    NASA Astrophysics Data System (ADS)

    Nicholes, Steven C.

    Advanced InP-based photonic integrated circuits are a critical technology to manage the increasing bandwidth demands of next-generation all-optical networks. Integrating many of the discrete functions required in optical networks into a single device provides a reduction in system footprint and optical losses by eliminating the fiber coupling junctions between components. This translates directly into increased system reliability and cost savings. Although many key network components have been realized via InP-based monolithic integration over the years, truly large-scale photonic ICs have only recently emerged in the marketplace. This lag-time has been mostly due to historically low device yields. In all-optical routing applications, large-scale photonic ICs may be able to address two of the key roadblocks associated with scaling modern electronic routers to higher capacities---namely, power and size. If the functions of dynamic wavelength conversion and routing are moved to the optical layer, we can eliminate the need for power-hungry optical-to-electrical (O/E) and electrical-to-optical (E/O) data conversions at each router node. Additionally, large-scale photonic ICs could reduce the footprint of such a system by combining the similar functions of each port onto a single chip. However, robust design and manufacturing techniques that will enable high-yield production of these chips must be developed. In this work, we demonstrate a monolithic tunable optical router (MOTOR) chip consisting of an array of eight 40-Gbps wavelength converters and a passive arrayed-waveguide grating router that functions as the packet-forwarding switch fabric of an all-optical router. The device represents one of the most complex InP photonic ICs ever reported, with more than 200 integrated functional elements in a single chip. Single-channel 40 Gbps wavelength conversion and channel switching using 231-1 PRBS data showed a power penalty as low as 4.5 dB with less than 2 W drive power

  6. Effect of switched-bias bakes on the postirradiation electrical response of MOS devices

    SciTech Connect

    Fleetwood, D.M.; Shaneyfelt, M.R.; Riewe, L.C.; Winokur, P.S.

    1993-01-01

    Qualitatively different trends in postirradiation electrical response are observed in MOS devices after very long (up to 2.75-year) switched-bias bakes. A revised defect nomenclature is introduced, and implications for MOS defect models are discussed.

  7. Effect of switched-bias bakes on the postirradiation electrical response of MOS devices

    SciTech Connect

    Fleetwood, D.M.; Shaneyfelt, M.R.; Riewe, L.C.; Winokur, P.S.

    1993-03-01

    Qualitatively different trends in postirradiation electrical response are observed in MOS devices after very long (up to 2.75-year) switched-bias bakes. A revised defect nomenclature is introduced, and implications for MOS defect models are discussed.

  8. Comparing SiC switching power devices: MOSFET, NPN transistor and GTO thyristor

    NASA Astrophysics Data System (ADS)

    Huang, Alex Q.; Zhang, Bo

    2000-02-01

    This paper for the first time systematically analyzed the operation mechanism of SiC NPN transistors. Theoretical device figure-of-merits for switching power devices based on the conduction loss and switching loss were developed. The on-state loss and the switching loss of 4.5-kV SiC switching power devices (MOSFET, NPN transistor and GTO thyristor) were then compared by using theoretical and numerical calculations. Special emphasis is placed on comparing the total power loss of the devices at a given current density. Theoretical analyses and simulation results show that GTO thyristors have a large switching loss due to the long current tail at turn-off, hence restricting its maximum operation frequency. High voltage SiC MOSFETs have a large on-state power dissipation at high current levels due to the resistive nature of the drift region, restricting their applications at high current densities. SiC NPN transistors have a comparable switching loss as that of SiC MOSFETs, but at the same time, SiC NPN transistors have the lowest on-state loss. This study indicates that SiC NPN transistor is the most attractive switching power device at 4.5 kV.

  9. All-optical microfluidic circuit for biochemical and cellular analysis powered by photoactive nanoparticles

    NASA Astrophysics Data System (ADS)

    Liu, Gang L.; Kim, Jaeyoun; Lee, Luke P.

    2006-08-01

    We have invented a novel all-optical-logic microfluidic system which is automatically controlled only by visible or near infrared light with down to submilliwatt power. No electric power supply, no external or MEMS pump, no tubings or connectors, no microfluidic valves, nor surface patterning are required in our system. Our device only consists of a single-layer PDMS microfluidic chip and newly invented photoactive nanoparticles. Our photoactive nanoparticles are capable of converting optical energy to hydrodynamic energy in fluids. The nanoparticle themselves are biocompatible and can be biofunctionalized. Via these photoactive nanoparticles, we used only light to drive, guide, switch and mix liquid in optofluidic logic circuits with desired speeds and directions. We demonstrated the optofluidic controls in transportation of biomolecules and cells.

  10. Nonlinear fiber applications for ultrafast all-optical signal processing

    NASA Astrophysics Data System (ADS)

    Kravtsov, Konstantin

    In the present dissertation different aspects of all-optical signal processing, enabled by the use of nonlinear fibers, are studied. In particular, we focus on applications of a novel heavily GeO2-doped (HD) nonlinear fiber, that appears to be superior to many other types of nonlinear fibers because of its high nonlinearity and suitability for the use in nonlinear optical loop mirrors (NOLMs). Different functions, such as all-optical switching, thresholding, and wavelength conversion, are demonstrated with the HD fibers in the NOLM configuration. These basic functions are later used for realization of ultrafast time-domain demultiplexers, clock recovery, detectors of short pulses in stealth communications, and primitive elements for analog computations. Another important technology that benefits from the use of nonlinear fiber-based signal processing is optical code-division multiple access (CDMA). It is shown in both theory and experiment that all-optical thresholding is a unique way of improving existing detection methods for optical CDMA. Also, it is the way of implementation of true asynchronous optical spread-spectrum networks, which allows full realization of optical CDMA potential. Some aspects of quantum signal processing and manipulation of quantum states are also studied in this work. It is shown that propagation and collisions of Thirring solitons lead to a substantial squeezing of quantum states, which may find applications for generation of squeezed light.

  11. Three-terminal resistive switching memory in a transparent vertical-configuration device

    SciTech Connect

    Ungureanu, Mariana; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E.

    2014-01-06

    The resistive switching phenomenon has attracted much attention recently for memory applications. It describes the reversible change in the resistance of a dielectric between two non-volatile states by the application of electrical pulses. Typical resistive switching memories are two-terminal devices formed by an oxide layer placed between two metal electrodes. Here, we report on the fabrication and operation of a three-terminal resistive switching memory that works as a reconfigurable logic component and offers an increased logic density on chip. The three-terminal memory device we present is transparent and could be further incorporated in transparent computing electronic technologies.

  12. Graphene Based Reversible Nano-Switch/Sensor Schottky Diode (NANOSSSD) Device

    NASA Technical Reports Server (NTRS)

    Miranda, Felix A. (Inventor); Theofylaktos, Onoufrios (Inventor); Pinto, Nicholas J. (Inventor); Mueller, Carl H. (Inventor); Santos, Javier (Inventor); Meador, Michael A. (Inventor)

    2015-01-01

    A nanostructure device is provided and performs dual functions as a nano-switching/sensing device. The nanostructure device includes a doped semiconducting substrate, an insulating layer disposed on the doped semiconducting substrate, an electrode formed on the insulating layer, and at least one layer of graphene formed on the electrode. The at least one layer of graphene provides an electrical connection between the electrode and the substrate and is the electroactive element in the device.

  13. Atomic switch: atom/ion movement controlled devices for beyond von-neumann computers.

    PubMed

    Hasegawa, Tsuyoshi; Terabe, Kazuya; Tsuruoka, Tohru; Aono, Masakazu

    2012-01-10

    An atomic switch is a nanoionic device that controls the diffusion of metal ions/atoms and their reduction/oxidation processes in the switching operation to form/annihilate a conductive path. Since metal atoms can provide a highly conductive channel even if their cluster size is in the nanometer scale, atomic switches may enable downscaling to smaller than the 11 nm technology node, which is a great challenge for semiconductor devices. Atomic switches also possess novel characteristics, such as high on/off ratios, very low power consumption and non-volatility. The unique operating mechanisms of these devices have enabled the development of various types of atomic switch, such as gap-type and gapless-type two-terminal atomic switches and three-terminal atomic switches. Novel functions, such as selective volatile/nonvolatile, synaptic, memristive, and photo-assisted operations have been demonstrated. Such atomic switch characteristics can not only improve the performance of present-day electronic systems, but also enable development of new types of electronic systems, such as beyond von- Neumann computers.

  14. Fast deterministic switching in orthogonal spin torque devices via the control of the relative spin polarizations

    SciTech Connect

    Park, Junbo; Buhrman, R. A.; Ralph, D. C.

    2013-12-16

    We model 100 ps pulse switching dynamics of orthogonal spin transfer (OST) devices that employ an out-of-plane polarizer and an in-plane polarizer. Simulation results indicate that increasing the spin polarization ratio, C{sub P} = P{sub IPP}/P{sub OPP}, results in deterministic switching of the free layer without over-rotation (360° rotation). By using spin torque asymmetry to realize an enhanced effective P{sub IPP}, we experimentally demonstrate this behavior in OST devices in parallel to anti-parallel switching. Modeling predicts that decreasing the effective demagnetization field can substantially reduce the minimum C{sub P} required to attain deterministic switching, while retaining low critical switching current, I{sub p} ∼ 500 μA.

  15. Superstructures of chiral nematic microspheres as all-optical switchable distributors of light

    PubMed Central

    Aβhoff, Sarah J.; Sukas, Sertan; Yamaguchi, Tadatsugu; Hommersom, Catharina A.; Le Gac, Séverine; Katsonis, Nathalie

    2015-01-01

    Light technology is based on generating, detecting and controlling the wavelength, polarization and direction of light. Emerging applications range from electronics and telecommunication to health, defence and security. In particular, data transmission and communication technologies are currently asking for increasingly complex and fast devices, and therefore there is a growing interest in materials that can be used to transmit light and also to control the distribution of light in space and time. Here, we design chiral nematic microspheres whose shape enables them to reflect light of different wavelengths and handedness in all directions. Assembled in organized hexagonal superstructures, these microspheres of well-defined sizes communicate optically with high selectivity for the colour and chirality of light. Importantly, when the microspheres are doped with photo-responsive molecular switches, their chiroptical communication can be tuned, both gradually in wavelength and reversibly in polarization. Since the kinetics of the “on” and “off” switching can be adjusted by molecular engineering of the dopants and because the photonic cross-communication is selective with respect to the chirality of the incoming light, these photo-responsive microspheres show potential for chiroptical all-optical distributors and switches, in which wavelength, chirality and direction of the reflected light can be controlled independently and reversibly. PMID:26400584

  16. Subpicosecond photonic switching based on bacteriorhodopsin

    NASA Astrophysics Data System (ADS)

    Ormos, Pal; Fabian, Laszlo; Heiner, Zsuzsanna; Mero, Mark; Kiss, Miklos; Wolff, Elmar; Osvay, Karoly; der, Andras

    2011-03-01

    All-optical data processing is the most promising approach for further improvement in data trafficking. We present a subpicosecond photonic switch where the active role is performed by the chromoprotein bacteriorhodopsin. The changes in the refractive index that accompany the steps of the photocycle of bacteriorhodopsin are used for all optical switching in appropriate integrated optical devices. We use grating coupled planar waveguides and the coupling is modulated by the light induced refractive index changes of bacteriorhodopsin. The switching is demonstrated in ultrafast pump-probe experiments. Different transitions of the photocycle are explored for switching applications. We show that by using the bR to I transition subpicosecond switching can be readily achieved. The approach is a basis for protein-based integrated optical devices, eventually leading to a conceptual revolution in telecommunications technologies.

  17. Reduction of switching time in pentalayer nanopillar device with different biasing configurations

    NASA Astrophysics Data System (ADS)

    Aravinthan, D.; Sabareesan, P.; Daniel, M.

    2017-01-01

    The spin transfer torque assisted magnetization switching in a pentalayer nanopillar device is theoretically studied for different biasing configurations. The magnetization switching time is calculated for three different configurations (standard(no biasing), pinned layer biasing and free layer biasing), by numerically solving the governing dynamical Landau-Lifshitz-Gilbert-Slonczewski (LLGS) equation. The corresponding switching time for an applied current density of 3 ×1011Am-2 is about 0.296 ns, 0.195 ns, and 0.108 ns respectively. Pinned layer biasing and free layer biasing increase the magnetization switching speed significantly. Reduction of switching time in the pinned layer biasing is due to the enhancement of spin transfer torque, whereas in the free layer biasing it is due to an additional magnetic torque which arises due to an applied magnetic field. The fastest magnetization switching is achieved for the free layer biasing configuration.

  18. Observation of nonvolatile resistive memory switching characteristics in Ag/graphene-oxide/Ag devices.

    PubMed

    Venugopal, Gunasekaran; Kim, Sang-Jae

    2012-11-01

    In this paper, we report highly stable and bipolar resistive switching effects of Ag/Graphene oxide thinfilm/Ag devices. The graphene-oxide (GO) thinfilms were prepared on Ag/SiO2/Si substrates by spin-coating technique. The Ag/GO/Ag devices showed a steady and bipolar resistive switching characteristic. The resistance switching from low resistance state (LRS) and high resistance state (HRS) with the resistance ratio of HRS to LRS of about 10 which was attained at a voltage bias of 0.1 V. Based on the filamentary conduction model, the dominant conduction mechanism of switching effect was well explained. Our results show GO can be a promising candidate for future development of nonvolatile memory devices.

  19. All-optical vector atomic magnetometer.

    PubMed

    Patton, B; Zhivun, E; Hovde, D C; Budker, D

    2014-07-04

    We demonstrate an all-optical magnetometer capable of measuring the magnitude and direction of a magnetic field using nonlinear magneto-optical rotation in cesium vapor. Vector capability is added by effective modulation of the field along orthogonal axes and subsequent demodulation of the magnetic-resonance frequency. This modulation is provided by the ac Stark shift induced by circularly polarized laser beams. The sensor exhibits a demonstrated rms noise floor of ∼65  fT/√[Hz] in measurement of the field magnitude and 0.5  mrad/√[Hz] in the field direction; elimination of technical noise would improve these sensitivities to 12  fT/√[Hz] and 10  μrad/√[Hz], respectively. Applications for this all-optical vector magnetometer would include magnetically sensitive fundamental physics experiments, such as the search for a permanent electric dipole moment of the neutron.

  20. Pencil beam all-optical ultrasound imaging

    PubMed Central

    Alles, Erwin J.; Noimark, Sacha; Zhang, Edward; Beard, Paul C.; Desjardins, Adrien E.

    2016-01-01

    A miniature, directional fibre-optic acoustic source is presented that employs geometrical focussing to generate a nearly-collimated acoustic pencil beam. When paired with a fibre-optic acoustic detector, an all-optical ultrasound probe with an outer diameter of 2.5 mm is obtained that acquires a pulse-echo image line at each probe position without the need for image reconstruction. B-mode images can be acquired by translating the probe and concatenating the image lines, and artefacts resulting from probe positioning uncertainty are shown to be significantly lower than those observed for conventional synthetic aperture scanning of a non-directional acoustic source. The high image quality obtained for excised vascular tissue suggests that the all-optical ultrasound probe is ideally suited for in vivo, interventional applications. PMID:27699130

  1. On-chip CMOS-compatible all-optical integrator

    PubMed Central

    Ferrera, M.; Park, Y.; Razzari, L.; Little, B. E.; Chu, S. T.; Morandotti, R.; Moss, D. J.; Azaña, J.

    2010-01-01

    All-optical circuits for computing and information processing could overcome the speed limitations intrinsic to electronics. However, in photonics, very few fundamental 'building blocks' equivalent to those used in multi-functional electronic circuits exist. In this study, we report the first all-optical temporal integrator in a monolithic, integrated platform. Our device—a lightwave 'capacitor-like' element based on a passive micro-ring resonator—performs the time integral of the complex field of an arbitrary optical waveform with a time resolution of a few picoseconds, corresponding to a processing speed of ∼200 GHz, and a 'hold' time approaching a nanosecond. This device, compatible with electronic technology (complementary metal-oxide semiconductor), will be one of the building blocks of next-generation ultrafast data-processing technology, enabling optical memories and real-time differential equation computing units. PMID:20975692

  2. Application of nanomaterials in two-terminal resistive-switching memory devices

    PubMed Central

    Ouyang, Jianyong

    2010-01-01

    Nanometer materials have been attracting strong attention due to their interesting structure and properties. Many important practical applications have been demonstrated for nanometer materials based on their unique properties. This article provides a review on the fabrication, electrical characterization, and memory application of two-terminal resistive-switching devices using nanomaterials as the active components, including metal and semiconductor nanoparticles (NPs), nanotubes, nanowires, and graphenes. There are mainly two types of device architectures for the two-terminal devices with NPs. One has a triple-layer structure with a metal film sandwiched between two organic semiconductor layers, and the other has a single polymer film blended with NPs. These devices can be electrically switched between two states with significant different resistances, i.e. the ‘ON’ and ‘OFF’ states. These render the devices important application as two-terminal non-volatile memory devices. The electrical behavior of these devices can be affected by the materials in the active layer and the electrodes. Though the mechanism for the electrical switches has been in argument, it is generally believed that the resistive switches are related to charge storage on the NPs. Resistive switches were also observed on crossbars formed by nanotubes, nanowires, and graphene ribbons. The resistive switches are due to nanoelectromechanical behavior of the materials. The Coulombic interaction of transient charges on the nanomaterials affects the configurable gap of the crossbars, which results into significant change in current through the crossbars. These nanoelectromechanical devices can be used as fast-response and high-density memory devices as well. PMID:22110862

  3. All-optical sampling based on quantum-dot semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Wu, Chen; Wang, Yongjun; Wang, Lina

    2016-11-01

    In recent years, the all-optical signal processing system has become a hot research field of optical communication. This paper focused on the basic research of quantum-dot (QD) semiconductor optical amplifier (SOA) and studied its practical application to all-optical sampling. A multi-level dynamic physical model of QD-SOA is established, and its ultrafast dynamic characteristics are studied through theoretical and simulation research. For further study, an all-optical sampling scheme based on the nonlinear polarization rotation (NPR) effect of QD-SOA is also proposed. This paper analyzed the characteristics of optical switch window and investigated the influence of different control light pulses on switch performance. The presented optical sampling method has an important role in promoting the improvement of all-optical signal processing technology.

  4. A band-modulation device in advanced FDSOI technology: Sharp switching characteristics

    NASA Astrophysics Data System (ADS)

    El Dirani, Hassan; Solaro, Yohann; Fonteneau, Pascal; Legrand, Charles-Alex; Marin-Cudraz, David; Golanski, Dominique; Ferrari, Philippe; Cristoloveanu, Sorin

    2016-11-01

    A band-modulation device is demonstrated experimentally in advanced FDSOI (Fully Depleted SOI). The Z2-FET (Zero Impact Ionization and Zero Subthreshold Slope FET) is a very recent sharp switching device which achieves remarkable performance in terms of leakage current and triggering control. The device is fabricated with Ultra-Thin Body and Buried Oxide (UTBB) Silicon-On-Insulator (SOI) technology, features an extremely sharp on-switch, low leakage and an adjustable triggering voltage (VON). The Z2-FET operation relies on the modulation of electrons and holes injection barriers. In this paper, we show, for the first time, experimental data obtained with the most advanced FDSOI node.

  5. Development and fabrication of improved power transistor switches. [fabrication and manufacturing of semiconductor devices

    NASA Technical Reports Server (NTRS)

    Hower, P. L.; Chu, C. K.

    1976-01-01

    A new class of high-voltage power transistors has been achieved by adapting present interdigitated thyristor processing techniques to the fabrication of NPN Si transistors. Present devices are 2.3 cm in diameter. The electrical performance obtained is consistent with the predictions of an optimum design theory specifically developed for power switching transistors. The forward safe operating area of the experimental transistors shows a significant improvement over commercially available devices. The report describes device design, wafer processing, and various measurements which include dc characteristics, forward and reverse second breakdown limits, and switching times.

  6. Electrode with transparent series resistance for uniform switching of optical modulation devices

    DOEpatents

    Tench, D. Morgan; Cunningham, Michael A.; Kobrin, Paul H.

    2008-01-08

    Switching uniformity of an optical modulation device for controlling the propagation of electromagnetic radiation is improved by use of an electrode comprising an electrically resistive layer that is transparent to the radiation. The resistive layer is preferably an innerlayer of a wide-bandgap oxide sandwiched between layers of indium tin oxide or another transparent conductor, and may be of uniform thickness, or may be graded so as to provide further improvement in the switching uniformity. The electrode may be used with electrochromic and reversible electrochemical mirror (REM) smart window devices, as well as display devices based on various technologies.

  7. Impacts of Co doping on ZnO transparent switching memory device characteristics

    NASA Astrophysics Data System (ADS)

    Simanjuntak, Firman Mangasa; Prasad, Om Kumar; Panda, Debashis; Lin, Chun-An; Tsai, Tsung-Ling; Wei, Kung-Hwa; Tseng, Tseung-Yuen

    2016-05-01

    The resistive switching characteristics of indium tin oxide (ITO)/Zn1-xCoxO/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnO device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated.

  8. All-Optical Terahertz Optical Asymmetric Demultiplexer (toad) Based Binary Comparator:. a Proposal

    NASA Astrophysics Data System (ADS)

    Chattopadhyay, Tanay

    Comparator determines whether a number is greater than, equals to or less than another number. It plays a significant role in fast central processing unit in all-optical scheme. In all-optical scheme here 1-bit binary comparator is proposed and described by Terahertz Optical Asymmetric Demultiplexer (TOAD) based interferometric switch. Simulation result by Mathcad-7 is also given. Cascading technique of building up the n-bit binary comparator with this 1-bit comparator block is also proposed here.

  9. Ultracompact all-optical XOR logic gate in a slow-light silicon photonic crystal waveguide.

    PubMed

    Husko, C; Vo, T D; Corcoran, B; Li, J; Krauss, T F; Eggleton, B J

    2011-10-10

    We demonstrate an ultracompact, chip-based, all-optical exclusive-OR (XOR) logic gate via slow-light enhanced four-wave mixing (FWM) in a silicon photonic crystal waveguide (PhCWG). We achieve error-free operation (<10⁻⁹) for 40 Gbit/s differential phase-shift keying (DPSK) signals with a 2.8 dB power penalty. Slowing the light to vg = c/32 enables a FWM conversion efficiency, η, of -30 dB for a 396 μm device. The nonlinear FWM process is enhanced by 20 dB compared to a relatively fast mode of vg = c/5. The XOR operation requires ≈ 41 mW, corresponding to a switching energy of 1 pJ/bit. We compare the slow-light PhCWG device performance with experimentally demonstrated XOR DPSK logic gates in other platforms and discuss scaling the device operation to higher bit-rates. The ultracompact structure suggests the potential for device integration.

  10. Switching device for the superconducting phase transition measurements of thin W films using a single superconducting quantum interference device

    NASA Astrophysics Data System (ADS)

    Sáfrán, G.; Loidl, M.; Meier, O.; Angloher, G.; Pröbst, F.; Seidel, W.

    1999-06-01

    A simple superconducting switch has been developed for the measurements of the low temperature superconducting phase transitions of several thin W samples connected simultaneously to a single superconducting quantum interference device. The switch, based on a Ti thin film resistor, can be set to normal or to superconducting within the cryostat by adjusting its temperature above or below the transition temperature by means of a thin film heater. The experimental setup, circuit and device properties, are discussed in detail. As an example of its application the superconducting phase transitions of two thin W samples on sapphire connected in series were measured subsequently as a function of temperature by applying two switches connected parallel to the samples. The switches exhibited a resistance of 67 Ω-1 kΩ at 4 K depending on the thickness and geometry of the Ti film and on the substrate material. The deviation from the real electrical resistance value of the samples caused by the finite resistance of the switches was found to be a maximum of 6×10-6 Ω. This, compared to the resistances to be measured (about 2×10-2 Ω), we consider negligible. The application of several switches within a cryostat can multiply the number of specimens measured in the same cooling cycle, enabling a more efficient characterization of the cryogenic properties of superconducting specimens.

  11. All-optical random number generation using highly nonlinear fibers by numerical simulation

    NASA Astrophysics Data System (ADS)

    Wang, Juanfen; Liang, Junqiang; Li, Pu; Yang, Lingzhen; Wang, Yuncai

    2014-06-01

    A new scheme of all-optical random number generation based on the nonlinear effects in highly nonlinear fibers (HNLF) is proposed. The scheme is comprised of ultra-wide band chaotic entropy source, all-optical sampler, all-optical comparator and all-optical exclusive-or (XOR), which are mainly realized by four-wave mixing (FWM) and cross-phase modulation (XPM) in highly nonlinear fibers. And we achieve 10 Gbit/s random numbers through numerically simulating all the processes. The entire operations are completed in the all-optical domain, which may overcome the bottleneck problem of electronic devices, and apply directly in high-speed all-optical communication network.

  12. Nonlinear Magnetic Dynamics and The Switching Phase Diagrams in Spintronic Devices

    NASA Astrophysics Data System (ADS)

    Yan, Shu

    Spin-transfer torque induced magnetic switching, by which the spin-polarized current transfers its magnetic moment to the ferromagnetic layer and changes its magnetization, holds great promise towards faster and smaller magnetic bits in data-storage applications due to the lower power consumption and better scalability. We propose an analytic approach which can be used to calculate the switching phase diagram of a nanomagnetic system in the presence of both magnetic field and spin-transfer torque in an exact fashion. This method is applied to the study of switching conditions for the uniaxial, single domain magnetic layers in different spin-transfer devices. In a spin valve with spin polarization collinear with the easy axis, we get a modified Stoner-Wohlfarth astroid which represents many of the features that have been found in experiment. It also shows a self-crossing boundary and demonstrates a region with three stable equilibria. We demonstrate that the region of stable equilibria with energy near the maximum can be reached only through a narrow bottleneck in the field space, which sets a stringent requirement for magnetic field alignment in the experiments. Switching diagrams are then calculated for the setups with magnetic field not perfectly aligned with the easy axis. In a ferromagnet-heavy-metal bilayer device with strong spin Hall effect, the in plane current becomes spin-polarized and transfers its magnetic moment to the ferromagnetic layer by diffusion. The three-dimensional asymmetric phase diagram is calculated. In the case that the external field is confined in the vertical plane defined by the direction of the current and the easy axis, the spin-transfer torque shifts the conventional in-plane (IP) equilibria within the same plane, and also creates two out-of-plane (OOP) equilibria, one of which can be stable. The threshold switching currents for IP switching and OOP switching are discussed. We also address the magnetic switching processes. Damping

  13. Doppler phase shifting using dual, switched phase shifting devices

    NASA Technical Reports Server (NTRS)

    Gutierrez, Roman C. (Inventor)

    2002-01-01

    A system of inducing a phase shift using moving reflector elements. The moving reflectors can be moving mirrors or an acousto-optical filter. The moving reflectors oscillate i.e. the move first in a first direction and then in a second direction. Two different reflectors are used so that the light can be switched between the reflectors. During a first portion of the cycle the light is coupled to the first modulator which moves the reflector in the first direction. The second modulator is out of phase with the first modulator, and the light is switched to that second modulator during a second portion of the cycle. The second modulator is also moving in the first direction when the light is applied thereto. In this way, the light obtains a constant direction Doppler shift.

  14. High speed all-optical networks

    NASA Technical Reports Server (NTRS)

    Chlamtac, Imrich

    1993-01-01

    An inherent problem of conventional point-to-point WAN architectures is that they cannot translate optical transmission bandwidth into comparable user available throughput due to the limiting electronic processing speed of the switching nodes. This report presents the first solution to WDM based WAN networks that overcomes this limitation. The proposed Lightnet architecture takes into account the idiosyncrasies of WDM switching/transmission leading to an efficient and pragmatic solution. The Lightnet architecture trades the ample WDM bandwidth for a reduction in the number of processing stages and a simplification of each switching stage, leading to drastically increased effective network throughputs.

  15. All-optical nanomechanical heat engine.

    PubMed

    Dechant, Andreas; Kiesel, Nikolai; Lutz, Eric

    2015-05-08

    We propose and theoretically investigate a nanomechanical heat engine. We show how a levitated nanoparticle in an optical trap inside a cavity can be used to realize a Stirling cycle in the underdamped regime. The all-optical approach enables fast and flexible control of all thermodynamical parameters and the efficient optimization of the performance of the engine. We develop a systematic optimization procedure to determine optimal driving protocols. Further, we perform numerical simulations with realistic parameters and evaluate the maximum power and the corresponding efficiency.

  16. All-Optical Nanomechanical Heat Engine

    NASA Astrophysics Data System (ADS)

    Dechant, Andreas; Kiesel, Nikolai; Lutz, Eric

    2015-05-01

    We propose and theoretically investigate a nanomechanical heat engine. We show how a levitated nanoparticle in an optical trap inside a cavity can be used to realize a Stirling cycle in the underdamped regime. The all-optical approach enables fast and flexible control of all thermodynamical parameters and the efficient optimization of the performance of the engine. We develop a systematic optimization procedure to determine optimal driving protocols. Further, we perform numerical simulations with realistic parameters and evaluate the maximum power and the corresponding efficiency.

  17. All-optical phase discrimination using SOA.

    PubMed

    Power, Mark J; Webb, Roderick P; Manning, Robert J

    2013-11-04

    We describe the first experimental demonstration of a novel all-optical phase discrimination technique, which can separate the two orthogonal phase components of a signal onto different frequencies. This method exploits nonlinear mixing in a semiconductor optical amplifier (SOA) to separate a 10.65 Gbaud QPSK signal into two 10.65 Gb/s BPSK signals which are then demodulated using a delay interferometer (DI). Eye diagrams and spectral measurements verify correct operation and a conversion efficiency greater than 9 dB is observed on both output BPSK channels when compared with the input QPSK signal.

  18. Digitally encoded all-optical sensor multiplexing

    NASA Astrophysics Data System (ADS)

    Pervez, Anjum

    1992-01-01

    A digital, all-optical temperature sensor design concept based on optical sampling and digital encoding is presented. The proposed sensor generates 2M binary digital codewords of length M bits. The codewords are generated serially and, therefore, only a single output fiber line is required. A multiplexing scheme, which minimizes the power requirement per sensor array and facilitates a cost-effective digit regeneration for remote monitoring over long distance, is presented. The sensor arrays are used as building blocks to configure large scale sensor networks based on LAN topologies.

  19. All optical binary delta-sigma modulator

    NASA Astrophysics Data System (ADS)

    Sayeh, Mohammad R.; Siahmakoun, Azad

    2005-09-01

    This paper describes a novel A/D converter called "Binary Delta-Sigma Modulator" (BDSM) which operates only with nonnegative signal with positive feedback and binary threshold. This important modification to the conventional delta-sigma modulator makes the high-speed (>100GHz) all-optical implementation possible. It has also the capability to modify its own sampling frequency as well as its input dynamic range. This adaptive feature helps designers to optimize the system performance under highly noisy environment and also manage the power consumption of the A/D converters.

  20. All-optical arithmetic unit with the help of terahertz-optical-asymmetric-demultiplexer-based tree architecture

    NASA Astrophysics Data System (ADS)

    Gayen, Dilip Kumar; Nath Roy, Jitendra

    2008-03-01

    An all-optical arithmetic unit with the help of terahertz-optical-asymmetric-demultiplexer (TOAD)-based tree architecture is proposed. We describe the all-optical arithmetic unit by using a set of all-optical multiplexer, all-optical full-adder, and optical switch. The all-optical arithmetic unit can be used to perform a fast central processor unit using optical hardware components. We have tried to exploit the advantages of both optical tree architecture and TOAD-based switch to design an integrated all-optical circuit that can perform binary addition, addition with carry, subtract with borrow, subtract (2's complement), double, increment, decrement, and transfer operations.

  1. Fabrication and Characterization of 6H-SiC Switching Devices

    DTIC Science & Technology

    1993-06-01

    ns range at 623 K has been observed in a 6H- SiC pn junction diode[4]. A Pt/6H-SiC Schottky diode has been shown to have 400 V reverse breakdown...6H-SiC Schottky diode switches, and a 75% switching efficiency in p+n 6H-SiC diode switches. A breakdown field of more than 1x106 V /cm is obtained...This could mean a blocking voltage of about 3000 v . A number of successful sic devices has been demonstrated. A high temperature rectifier made

  2. Real-time device-scale imaging of conducting filament dynamics in resistive switching materials

    PubMed Central

    Lee, Keundong; Tchoe, Youngbin; Yoon, Hosang; Baek, Hyeonjun; Chung, Kunook; Lee, Sangik; Yoon, Chansoo; Park, Bae Ho; Yi, Gyu-Chul

    2016-01-01

    ReRAM is a compelling candidate for next-generation non-volatile memory owing to its various advantages. However, fluctuation of operation parameters are critical weakness occurring failures in ‘reading’ and ‘writing’ operations. To enhance the stability, it is important to understand the mechanism of the devices. Although numerous studies have been conducted using AFM or TEM, the understanding of the device operation is still limited due to the destructive nature and/or limited imaging range of the previous methods. Here, we propose a new hybrid device composed of ReRAM and LED enabling us to monitor the conducting filament (CF) configuration on the device scale during resistive switching. We directly observe the change in CF configuration across the whole device area through light emission from our hybrid device. In contrast to former studies, we found that minor CFs were formed earlier than major CF contributing to the resistive switching. Moreover, we investigated the substitution of a stressed major CF with a fresh minor CF when large fluctuation of operation voltage appeared after more than 50 times of resistive switching in atmospheric condition. Our results present an advancement in the understanding of ReRAM operation mechanism, and a step toward stabilizing the fluctuations in ReRAM switching parameters. PMID:27271792

  3. Real-time device-scale imaging of conducting filament dynamics in resistive switching materials

    NASA Astrophysics Data System (ADS)

    Lee, Keundong; Tchoe, Youngbin; Yoon, Hosang; Baek, Hyeonjun; Chung, Kunook; Lee, Sangik; Yoon, Chansoo; Park, Bae Ho; Yi, Gyu-Chul

    2016-06-01

    ReRAM is a compelling candidate for next-generation non-volatile memory owing to its various advantages. However, fluctuation of operation parameters are critical weakness occurring failures in ‘reading’ and ‘writing’ operations. To enhance the stability, it is important to understand the mechanism of the devices. Although numerous studies have been conducted using AFM or TEM, the understanding of the device operation is still limited due to the destructive nature and/or limited imaging range of the previous methods. Here, we propose a new hybrid device composed of ReRAM and LED enabling us to monitor the conducting filament (CF) configuration on the device scale during resistive switching. We directly observe the change in CF configuration across the whole device area through light emission from our hybrid device. In contrast to former studies, we found that minor CFs were formed earlier than major CF contributing to the resistive switching. Moreover, we investigated the substitution of a stressed major CF with a fresh minor CF when large fluctuation of operation voltage appeared after more than 50 times of resistive switching in atmospheric condition. Our results present an advancement in the understanding of ReRAM operation mechanism, and a step toward stabilizing the fluctuations in ReRAM switching parameters.

  4. Asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices

    NASA Astrophysics Data System (ADS)

    Biju, Kuyyadi P.; Liu, XinJun; Bourim, El Mostafa; Kim, Insung; Jung, Seungjae; Siddik, Manzar; Lee, Joonmyoung; Hwang, Hyunsang

    2010-12-01

    The resistive switching characteristics of Pt/TiO2/W devices in a submicrometre via-hole structure are investigated. TiO2 film is grown by the sol-gel spin coating technique. The device exhibits reversible and reproducible bistable resistive switching with a rectifying effect. The Schottky contact at the Pt/TiO2 interface limits electron injection under reverse bias resulting in a rectification ratio of >60 at 2 V in the low-resistance state. The switching mechanism in our device can be interpreted as an anion migration-induced redox reaction at the tungsten bottom electrode (W). The rectifying effect can significantly reduce the sneak path current in a crossbar array and provide a feasible way to achieve high memory density.

  5. In-fiber all-optical fractional differentiator.

    PubMed

    Cuadrado-Laborde, C; Andrés, M V

    2009-03-15

    We demonstrate that an asymmetrical pi phase-shifted fiber Bragg grating operated in reflection can provide the required spectral response for implementing an all-optical fractional differentiator. There are different (but equivalent) ways to design it, e.g., by using different gratings lengths and keeping the same index modulation depth at both sides of the pi phase shift, or vice versa. Analytical expressions were found relating the fractional differentiator order with the grating parameters. The device shows a good accuracy calculating the fractional time derivatives of the complex field of an arbitrary input optical waveform. The introduced concept is supported by numerical simulations.

  6. Realization of an all optical exciton-polariton router

    SciTech Connect

    Marsault, Félix; Nguyen, Hai Son; Tanese, Dimitrii; Lemaître, Aristide; Galopin, Elisabeth; Sagnes, Isabelle; Amo, Alberto

    2015-11-16

    We report on the experimental realization of an all optical router for exciton-polaritons. This device is based on the design proposed by Flayac and Savenko [Appl. Phys. Lett. 103, 201105 (2013)], in which a zero-dimensional island is connected through tunnel barriers to two periodically modulated wires of different periods. Selective transmission of polaritons injected in the island, into either of the two wires, is achieved by tuning the energy of the island state across the band structure of the modulated wires. We demonstrate routing of ps polariton pulses using an optical control beam which controls the energy of the island quantum states, thanks to polariton-exciton interactions.

  7. Stochastic switching of TiO2-based memristive devices with identical initial memory states

    PubMed Central

    2014-01-01

    In this work, we show that identical TiO2-based memristive devices that possess the same initial resistive states are only phenomenologically similar as their internal structures may vary significantly, which could render quite dissimilar switching dynamics. We experimentally demonstrated that the resistive switching of practical devices with similar initial states could occur at different programming stimuli cycles. We argue that similar memory states can be transcribed via numerous distinct active core states through the dissimilar reduced TiO2-x filamentary distributions. Our hypothesis was finally verified via simulated results of the memory state evolution, by taking into account dissimilar initial filamentary distribution. PMID:24994953

  8. Switching dynamics of thin film ferroelectric devices - a massively parallel phase field study

    NASA Astrophysics Data System (ADS)

    Ashraf, Md. Khalid

    In this thesis, we investigate the switching dynamics in thin film ferroelectrics. Ferroelectric materials are of inherent interest for low power and multi-functional devices. However, possible device applications of these materials have been limited due to the poorly understood electromagnetic and mechanical response at the nanoscale in arbitrary device structures. The difficulty in understanding switching dynamics mainly arises from the presence of features at multiple length scales and the nonlinearity associated with the strongly coupled states. For example, in a ferroelectric material, the domain walls are of nm size whereas the domain pattern forms at micron scale. The switching is determined by coupled chemical, electrostatic, mechanical and thermal interactions. Thus computational understanding of switching dynamics in thin film ferroelectrics and a direct comparison with experiment poses a significant numerical challenge. We have developed a phase field model that describes the physics of polarization dynamics at the microscopic scale. A number of efficient numerical methods have been applied for achieving massive parallelization of all the calculation steps. Conformally mapped elements, node wise assembly and prevention of dynamic loading minimized the communication between processors and increased the parallelization efficiency. With these improvements, we have reached the experimental scale - a significant step forward compared to the state of the art thin film ferroelectric switching dynamics models. Using this model, we elucidated the switching dynamics on multiple surfaces of the multiferroic material BFO. We also calculated the switching energy of scaled BFO islands. Finally, we studied the interaction of domain wall propagation with misfit dislocations in the thin film. We believe that the model will be useful in understanding the switching dynamics in many different experimental setups incorporating thin film ferroelectrics.

  9. All optical labeling scheme with vestigial sideband payload.

    PubMed

    Chen, Hongwei; Chen, Minghua; Dai, Yitang; Xie, Shizhong; Zhou, Bingkun

    2005-04-04

    A novel scheme based on 40Gb/s vestigial sideband modulation for optical payload and label multiplex and separation in all optical label switching (AOLS) networks is firstly proposed and experimentally demonstrated. The payload is combined and separated with wavelength labels by optical filters. The experiment results show that after label separation, the power penalties of payload and label are both very little. The influence of the wavelength difference between label and payload is also discussed. The power penalty of payload can be less than 1dB as long as the wavelength difference is larger than 0.1nm. This scheme highly reduces the channel bandwidth of payload and label and is proposing to be used in future optical Internet.

  10. Self-organized plasmonic metasurfaces for all-optical modulation

    NASA Astrophysics Data System (ADS)

    Della Valle, G.; Polli, D.; Biagioni, P.; Martella, C.; Giordano, M. C.; Finazzi, M.; Longhi, S.; Duò, L.; Cerullo, G.; Buatier de Mongeot, F.

    2015-06-01

    We experimentally demonstrate a self-organized metasurface with a polarization dependent transmittance that can be dynamically controlled by optical means. The configuration consists of tightly packed plasmonic nanowires with a large dispersion of width and height produced by the defocused ion-beam sputtering of a thin gold film supported on a silica glass. Our results are quantitatively interpreted according to a theoretical model based on the thermomodulational nonlinearity of gold and a finite-element numerical analysis of the absorption and scattering cross-sections of the nanowires. We found that the polarization sensitivity of the metasurface can be strongly enhanced by pumping with ultrashort laser pulses, leading to potential applications in ultrafast all-optical modulation and switching of light.

  11. All-optical OFDM network coding scheme for all-optical virtual private communication in PON

    NASA Astrophysics Data System (ADS)

    Li, Lijun; Gu, Rentao; Ji, Yuefeng; Bai, Lin; Huang, Zhitong

    2014-03-01

    A novel optical orthogonal frequency division multiplexing (OFDM) network coding scheme is proposed over passive optical network (PON) system. The proposed scheme for all-optical virtual private network (VPN) does not only improve transmission efficiency, but also realize full-duplex communication mode in a single fiber. Compared with the traditional all-optical VPN architectures, the all-optical OFDM network coding scheme can support higher speed, more flexible bandwidth allocation, and higher spectrum efficiency. In order to reduce the difficulty of alignment for encoding operation between inter-communication traffic, the width of OFDM subcarrier pulse is stretched in our proposed scheme. The feasibility of all-optical OFDM network coding scheme for VPN is verified, and the relevant simulation results show that the full-duplex inter-communication traffic stream can be transmitted successfully. Furthermore, the tolerance of misalignment existing in inter-ONUs traffic is investigated and analyzed for all-optical encoding operation, and the difficulty of pulse alignment is proved to be lower.

  12. Ultra high voltage MOS controlled 4H-SiC power switching devices

    NASA Astrophysics Data System (ADS)

    Ryu, S.; Capell, C.; Van Brunt, E.; Jonas, C.; O'Loughlin, M.; Clayton, J.; Lam, K.; Pala, V.; Hull, B.; Lemma, Y.; Lichtenwalner, D.; Zhang, Q. J.; Richmond, J.; Butler, P.; Grider, D.; Casady, J.; Allen, S.; Palmour, J.; Hinojosa, M.; Tipton, C. W.; Scozzie, C.

    2015-08-01

    Ultra high voltage (UHV, >15 kV) 4H-silicon carbide (SiC) power devices have the potential to significantly improve the system performance, reliability, and cost of energy conversion systems by providing reduced part count, simplified circuit topology, and reduced switching losses. In this paper, we compare the two MOS based UHV 4H-SiC power switching devices; 15 kV 4H-SiC MOSFETs and 15 kV 4H-SiC n-IGBTs. The 15 kV 4H-SiC MOSFET shows a specific on-resistance of 204 mΩ cm2 at 25 °C, which increased to 570 mΩ cm2 at 150 °C. The 15 kV 4H-SiC MOSFET provides low, temperature-independent, switching losses which makes the device more attractive for applications that require higher switching frequencies. The 15 kV 4H-SiC n-IGBT shows a significantly lower forward voltage drop (VF), along with reasonable switching performance, which make it a very attractive device for high voltage applications with lower switching frequency requirements. An electrothermal analysis showed that the 15 kV 4H-SiC n-IGBT outperforms the 15 kV 4H-SiC MOSFET for applications with switching frequencies of less than 5 kHz. It was also shown that the use of a carrier storage layer (CSL) can significantly improve the conduction performance of the 15 kV 4H-SiC n-IGBTs.

  13. Interfacial behavior of resistive switching in ITO-PVK-Al WORM memory devices

    NASA Astrophysics Data System (ADS)

    Whitcher, T. J.; Woon, K. L.; Wong, W. S.; Chanlek, N.; Nakajima, H.; Saisopa, T.; Songsiriritthigul, P.

    2016-02-01

    Understanding the mechanism of resistive switching in a memory device is fundamental in order to improve device performance. The mechanism of current switching in a basic organic write-once read-many (WORM) memory device is investigated by determining the energy level alignments of indium tin oxide (ITO), poly(9-vinylcarbazole) (PVK) and aluminum (Al) using x-ray and ultraviolet photoelectron spectroscopy, current-voltage characterization and Auger depth profiling. The current switching mechanism was determined to be controlled by the interface between the ITO and the PVK. The electric field applied across the device causes the ITO from the uneven surface of the anode to form metallic filaments through the PVK, causing a shorting effect within the device leading to increased conduction. This was found to be independent of the PVK thickness, although the switch-on voltage was non-linearly dependent on the thickness. The formation of these filaments also caused the destruction of the interfacial dipole at the PVK-Al interface.

  14. Migration of interfacial oxygen ions modulated resistive switching in oxide-based memory devices

    NASA Astrophysics Data System (ADS)

    Chen, C.; Gao, S.; Zeng, F.; Tang, G. S.; Li, S. Z.; Song, C.; Fu, H. D.; Pan, F.

    2013-07-01

    Oxides-based resistive switching memory induced by oxygen ions migration is attractive for future nonvolatile memories. Numerous works had focused their attentions on the sandwiched oxide materials for depressing the characteristic variations, but the comprehensive studies of the dependence of electrodes on the migration behavior of oxygen ions are overshadowed. Here, we investigated the interaction of various metals (Ni, Co, Al, Ti, Zr, and Hf) with oxygen atoms at the metal/Ta2O5 interface under electric stress and explored the effect of top electrode on the characteristic variations of Ta2O5-based memory device. It is demonstrated that chemically inert electrodes (Ni and Co) lead to the scattering switching characteristics and destructive gas bubbles, while the highly chemically active metals (Hf and Zr) formed a thick and dense interfacial intermediate oxide layer at the metal/Ta2O5 interface, which also degraded the resistive switching behavior. The relatively chemically active metals (Al and Ti) can absorb oxygen ions from the Ta2O5 film and avoid forming the problematic interfacial layer, which is benefit to the formation of oxygen vacancies composed conduction filaments in Ta2O5 film thus exhibit the minimum variations of switching characteristics. The clarification of oxygen ions migration behavior at the interface can lead further optimization of resistive switching performance in Ta2O5-based memory device and guide the rule of electrode selection for other oxide-based resistive switching memories.

  15. Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices

    SciTech Connect

    Kim, Myung Ju; Jeon, Dong Su; Park, Ju Hyun; Kim, Tae Geun

    2015-05-18

    This paper reports the bipolar resistive switching characteristics of TaN{sub x}-based resistive random access memory (ReRAM). The conduction mechanism is explained by formation and rupture of conductive filaments caused by migration of nitrogen ions and vacancies; this mechanism is in good agreement with either Ohmic conduction or the Poole-Frenkel emission model. The devices exhibit that the reset voltage varies from −0.82 V to −0.62 V, whereas the set voltage ranges from 1.01 V to 1.30 V for 120 DC sweep cycles. In terms of reliability, the devices exhibit good retention (>10{sup 5 }s) and pulse-switching endurance (>10{sup 6} cycles) properties. These results indicate that TaN{sub x}-based ReRAM devices have a potential for future nonvolatile memory devices.

  16. Determinants of Method Switching among Social Franchise Clients Who Discontinued the Use of Intrauterine Contraceptive Device.

    PubMed

    Hameed, Waqas; Azmat, Syed Khurram; Ali, Moazzam; Hussain, Wajahat; Mustafa, Ghulam; Ishaque, Muhammad; Ali, Safdar; Ahmed, Aftab; Temmerman, Marleen

    2015-01-01

    Introduction. Women who do not switch to alternate methods after contraceptive discontinuation, for reasons other than the desire to get pregnant or not needing it, are at obvious risk for unplanned pregnancies or unwanted births. This paper examines the factors that influence women to switch from Intrauterine Contraceptive Device (IUCD) to other methods instead of terminating contraceptive usage altogether. Methods. The data used for this study comes from a larger cross-sectional survey conducted in nine (9) randomly selected districts of Sindh and Punjab provinces of Pakistan, during January 2011. Using Stata 11.2, we analyzed data on 333 women, who reported the removal of IUCDs due to reasons other than the desire to get pregnant. Results. We found that 39.9% of the women do not switch to another method of contraception within one month after IUCD discontinuation. Use of contraception before IUCD insertion increases the odds for method switching by 2.26 times after removal. Similarly, postremoval follow-up by community health worker doubles (OR = 2.0) the chances of method switching. Compared with women who received free IUCD service (via voucher scheme), the method switching is 2.01 times higher among women who had paid for IUCD insertion. Conclusion. To increase the likelihood of method switching among IUCD discontinuers this study emphasizes the need for postremoval client counseling, follow-up by healthcare provider, improved choices to a wider range of contraceptives for poor clients, and user satisfaction.

  17. Determinants of Method Switching among Social Franchise Clients Who Discontinued the Use of Intrauterine Contraceptive Device

    PubMed Central

    Hameed, Waqas; Azmat, Syed Khurram; Ali, Moazzam; Hussain, Wajahat; Mustafa, Ghulam; Ishaque, Muhammad; Ali, Safdar; Ahmed, Aftab; Temmerman, Marleen

    2015-01-01

    Introduction. Women who do not switch to alternate methods after contraceptive discontinuation, for reasons other than the desire to get pregnant or not needing it, are at obvious risk for unplanned pregnancies or unwanted births. This paper examines the factors that influence women to switch from Intrauterine Contraceptive Device (IUCD) to other methods instead of terminating contraceptive usage altogether. Methods. The data used for this study comes from a larger cross-sectional survey conducted in nine (9) randomly selected districts of Sindh and Punjab provinces of Pakistan, during January 2011. Using Stata 11.2, we analyzed data on 333 women, who reported the removal of IUCDs due to reasons other than the desire to get pregnant. Results. We found that 39.9% of the women do not switch to another method of contraception within one month after IUCD discontinuation. Use of contraception before IUCD insertion increases the odds for method switching by 2.26 times after removal. Similarly, postremoval follow-up by community health worker doubles (OR = 2.0) the chances of method switching. Compared with women who received free IUCD service (via voucher scheme), the method switching is 2.01 times higher among women who had paid for IUCD insertion. Conclusion. To increase the likelihood of method switching among IUCD discontinuers this study emphasizes the need for postremoval client counseling, follow-up by healthcare provider, improved choices to a wider range of contraceptives for poor clients, and user satisfaction. PMID:26576454

  18. Cyclic electric field stress on bipolar resistive switching devices

    NASA Astrophysics Data System (ADS)

    Schulman, A.; Acha, C.

    2013-12-01

    We have studied the effects of accumulating cyclic electrical pulses of increasing amplitude on the non-volatile resistance state of interfaces made by sputtering a metal (Au, Pt) on top of the surface of a cuprate superconductor YBa2Cu3O7-δ. We have analyzed the influence of the number of applied pulses N on the relative amplitude of the remnant resistance change between the high (RH) and the low (RL) state [(α=(RH-RL)/RL] at different temperatures (T). We show that the critical voltage (Vc) needed to produce a resistive switching (RS, i.e., α >0) decreases with increasing N or T. We also find a power law relation between the voltage of the pulses and the number of pulses Nα0 required to produce a RS of α =α0. This relation remains very similar to the Basquin equation used to describe the stress-fatigue lifetime curves in mechanical tests. This points out to the similarity between the physics of the RS, associated with the diffusion of oxygen vacancies induced by electrical pulses, and the propagation of defects in materials subjected to repeated mechanical stress.

  19. Development of Curie point switching for thin film, random access, memory device

    NASA Technical Reports Server (NTRS)

    Lewicki, G. W.; Tchernev, D. I.

    1967-01-01

    Managanese bismuthide films are used in the development of a random access memory device of high packing density and nondestructive readout capability. Memory entry is by Curie point switching using a laser beam. Readout is accomplished by microoptical or micromagnetic scanning.

  20. Analysis on optical bistability parameters in photonic switching devices

    NASA Astrophysics Data System (ADS)

    Sarafraz, Hossein; Sayeh, Mohammad R.

    2016-06-01

    An investigation has been done on the parameters of a hysteretic bistable optical Schmitt trigger device. From a design point of view, it is important to know the regions where this bistability occurs and is fully functional with respect to its subsystem parameters. Otherwise experimentally reaching such behavior will be very time-consuming and frustrating, especially with multiple devices employed in a single photonic circuit. A photonic Schmitt trigger consisting of two feedbacked inverting amplifiers, each characterized by -m (slope), A (y-intercept), and B (constant base) parameters is considered. This system is investigated dynamically with a varying input to find its stable and unstable states both mathematically and with simulation. In addition to a complete mathematical analysis of the system, we also describe how m, A, and B can be properly chosen in order to satisfy certain system conditions that result in bistability. More restrictions are also imposed to these absolute conditions by the system conditions as will be discussed. Finally, all results are verified in a more realistic photonic simulation.

  1. 76 FR 57075 - In the Matter of Certain Lighting Control Devices Including Dimmer Switches and Parts Thereof (IV...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-09-15

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION In the Matter of Certain Lighting Control Devices Including Dimmer Switches and Parts Thereof (IV... control devices including dimmer switches and parts thereof by reason of infringement of certain claims...

  2. The GALAXIE all-optical FEL project

    SciTech Connect

    Rosenzweig, J. B.; Arab, E.; Andonian, G.; Cahill, A.; Fitzmorris, K.; Fukusawa, A.; Hoang, P.; Jovanovic, I.; Marcus, G.; Marinelli, A.; Murokh, A.; Musumeci, P.; Naranjo, B.; O'Shea, B.; O'Shea, F.; Ovodenko, A.; Pogorelsky, I.; Putterman, S.; Roberts, K.; Shumail, M.; and others

    2012-12-21

    We describe a comprehensive project, funded under the DARPA AXiS program, to develop an all-optical table-top X-ray FEL based on dielectric acceleration and electromagnetic undulators, yielding a compact source of coherent X-rays for medical and related applications. The compactness of this source demands that high field (>GV/m) acceleration and undulation-inducing fields be employed, thus giving rise to the project's acronym: GV/m AcceLerator And X-ray Integrated Experiment (GALAXIE). There are numerous physics and technical hurdles to surmount in this ambitious scenario, and the integrated solutions include: a biharmonic photonic TW structure, 200 micron wavelength electromagnetic undulators, 5 {mu}m laser development, ultra-high brightness magnetized/asymmetric emittance electron beam generation, and SASE FEL operation. We describe the overall design philosophy of the project, the innovative approaches to addressing the challenges presented by the design, and the significant progress towards realization of these approaches in the nine months since project initialization.

  3. Interfacial redox centers as origin of color switching in organic electrochromic device

    NASA Astrophysics Data System (ADS)

    Mishra, Suryakant; Pandey, Haardik; Yogi, Priyanka; Saxena, Shailendra K.; Roy, Swarup; Sagdeo, Pankaj R.; Kumar, Rajesh

    2017-04-01

    In an attempt to understand the color switching mechanism of organic electrochromic devices, live spectroscopy of a viologen based device has been done. Role of redox reactions taking place at the electrode/electrolyte interface has been identified using Raman and UV-Vis spectroscopies carried out during the device operation. In-situ Raman and transmission/absorption studies establish the origin of bias induced color change, between a transparent and navy blue color, in the electrochromic device. The origin of color change has been attributed to the bias induced redox switching between its dication and free radical forms which have different optical properties from each other. Raman spectra collected from negative and positive electrodes of the device reveal that blue color species (free radical) are present at the negative electrode which is created due to reduction of the dicationic form. In-situ UV-Vis spectra reveals that the navy blue color of the device under biased condition is not due to increase in the transparency corresponding to the blue wavelength but due to suppression of its transparency corresponding to the complementary colors as studied using a from CIE (Commission Internationale de l'Eclairge International Commission on Illumination) chart. Absorption modulation has been reported from the device with good ON/OFF contrast of the device.

  4. Computer analysis of the negative differential resistance switching phenomenon of double-injection devices

    NASA Technical Reports Server (NTRS)

    Shieh, Tsay-Jiu

    1989-01-01

    By directly solving the semiconductor differential equations for the double-injection (DI) devices involving two interacting deep levels, the authors studied the negative differential resistance switching characteristic and its relationship with the device dimension, doping level, and dependence on the deep impurity profile. Computer simulation showed that although one can increase the threshold voltage by increasing the device length, the excessive holding voltage that would follow would put this device in a very limited application such as pulse power source. The excessive leakage current in the low conductance state also jeopardizes the attempt to use the device for any practical purpose. Unless there are new materials and deep impurities found that have a great differential hole and electron capture cross sections and a reasonable energy bandgap for low intrinsic carrier concentration, no big improvement in the fate of DI devices is expected in the near future.

  5. Stability and its mechanism in Ag/CoOx/Ag interface-type resistive switching device

    NASA Astrophysics Data System (ADS)

    Fu, Jianbo; Hua, Muxin; Ding, Shilei; Chen, Xuegang; Wu, Rui; Liu, Shunquan; Han, Jingzhi; Wang, Changsheng; Du, Honglin; Yang, Yingchang; Yang, Jinbo

    2016-10-01

    Stability is an important issue for the application of resistive switching (RS) devices. In this work, the endurance and retention properties of Ag/CoOx/Ag interface-type RS device were investigated. This device exhibits rectifying I–V curve, multilevel storage states and retention decay behavior, which are all related to the Schottky barrier at the interface. The device can switch for thousands of cycles without endurance failure and shows narrow resistance distributions with relatively low fluctuation. However, both the high and low resistance states spontaneously decay to an intermediate resistance state during the retention test. This retention decay phenomenon is due to the short lifetime τ (τ = 0.5 s) of the metastable pinning effect caused by the interface states. The data analysis indicated that the pinning effect is dependent on the depth and density of the interface state energy levels, which determine the retention stability and the switching ratio, respectively. This suggests that an appropriate interface structure can improve the stability of the interface-type RS device

  6. Stability and its mechanism in Ag/CoOx/Ag interface-type resistive switching device

    PubMed Central

    Fu, Jianbo; Hua, Muxin; Ding, Shilei; Chen, Xuegang; Wu, Rui; Liu, Shunquan; Han, Jingzhi; Wang, Changsheng; Du, Honglin; Yang, Yingchang; Yang, Jinbo

    2016-01-01

    Stability is an important issue for the application of resistive switching (RS) devices. In this work, the endurance and retention properties of Ag/CoOx/Ag interface-type RS device were investigated. This device exhibits rectifying I–V curve, multilevel storage states and retention decay behavior, which are all related to the Schottky barrier at the interface. The device can switch for thousands of cycles without endurance failure and shows narrow resistance distributions with relatively low fluctuation. However, both the high and low resistance states spontaneously decay to an intermediate resistance state during the retention test. This retention decay phenomenon is due to the short lifetime τ (τ = 0.5 s) of the metastable pinning effect caused by the interface states. The data analysis indicated that the pinning effect is dependent on the depth and density of the interface state energy levels, which determine the retention stability and the switching ratio, respectively. This suggests that an appropriate interface structure can improve the stability of the interface-type RS device PMID:27759116

  7. A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry

    PubMed Central

    Katase, Takayoshi; Onozato, Takaki; Hirono, Misako; Mizuno, Taku; Ohta, Hiromichi

    2016-01-01

    Proton and hydroxyl ion play an essential role for tuning functionality of oxides because their electronic state can be controlled by modifying oxygen off-stoichiometry and/or protonation. Tungsten trioxide (WO3), a well-known electrochromic (EC) material for smart window, is a wide bandgap insulator, whereas it becomes a metallic conductor HxWO3 by protonation. Although one can utilize electrochromism together with metal-insulator (MI) switching for one device, such EC-MI switching cannot be utilized in current EC devices because of their two-terminal structure with parallel-plate configuration. Here we demonstrate a transparent EC-MI switchable device with three-terminal TFT-type structure using amorphous (a-) WO3 channel layer, which was fabricated on glass substrate at room temperature. We used water-infiltrated nano-porous glass, CAN (calcium aluminate with nano-pores), as a liquid-leakage-free solid gate insulator. At virgin state, the device was fully transparent in the visible-light region. For positive gate voltage, the active channel became dark blue, and electrical resistivity of the a-WO3 layer drastically decreased with protonation. For negative gate voltage, deprotonation occurred and the active channel returned to transparent insulator. Good cycleability of the present transparent EC-MI switching device would have potential for the development of advanced smart windows. PMID:27174791

  8. Integrated all-optical logic discriminators based on plasmonic bandgap engineering

    PubMed Central

    Lu, Cuicui; Hu, Xiaoyong; Yang, Hong; Gong, Qihuang

    2013-01-01

    Optical computing uses photons as information carriers, opening up the possibility for ultrahigh-speed and ultrawide-band information processing. Integrated all-optical logic devices are indispensible core components of optical computing systems. However, up to now, little experimental progress has been made in nanoscale all-optical logic discriminators, which have the function of discriminating and encoding incident light signals according to wavelength. Here, we report a strategy to realize a nanoscale all-optical logic discriminator based on plasmonic bandgap engineering in a planar plasmonic microstructure. Light signals falling within different operating wavelength ranges are differentiated and endowed with different logic state encodings. Compared with values previously reported, the operating bandwidth is enlarged by one order of magnitude. Also the SPP light source is integrated with the logic device while retaining its ultracompact size. This opens up a way to construct on-chip all-optical information processors and artificial intelligence systems. PMID:24071647

  9. Numerical simulation of a novel all-optical flip-flop based on a chirped nonlinear distributed feedback semiconductor laser structure using GPGPU computing

    NASA Astrophysics Data System (ADS)

    Zoweil, H.

    2015-05-01

    A novel all-optical flip-flop based on a chirped nonlinear distributed feedback laser structure is proposed. The flip-flop does not require a holding beam. The optical gain is provided by a current injection into an active layer. The nonlinear wave-guiding layer consists of a chirped phase shifted grating accompanied with a negative nonlinear refractive index coefficient that increases in magnitude along the wave-guide. In the 'OFF' state, the chirped grating does not provide the required optical feedback to start lasing. An optical pulse switches the device 'ON' by reducing the chirp due to the negative nonlinear refractive index coefficient. The reduced chirp grating provides enough feedback to sustain a laser mode. The device is switched 'OFF' by cross gain modulation. GPGPU computing allows for long simulation time of multiple SET-RESET operations. The 'ON/OFF' transitions delays are in nanoseconds time scale.

  10. Performance analysis of resistive switching devices based on BaTiO3 thin films

    NASA Astrophysics Data System (ADS)

    Samardzic, Natasa; Kojic, Tijana; Vukmirovic, Jelena; Tripkovic, Djordjije; Bajac, Branimir; Srdic, Vladimir; Stojanovic, Goran

    2016-03-01

    Resitive switching devices, memristors, have recenty attracted much attention due to promising performances and potential applications in the field of logic and memory devices. Here, we present thin film BaTiO3 based memristor fabricated using ink-jet printing technique. Active material is a single layer barium titanate film with thickness of ̴100 nm, sandwitched between metal electodes. Printing parameters were optimized aiming to achieve stable drop flow and uniform printed layer. Current-voltage characteristics show typical memristive behavior with pinched hysteresis loop crossed at the origin, with marked differences between High Resistive State (HRS) and Low Resistive State (LRS). Obtained resistive states are stable during numerous switching processes. The device also shows unipolar switching effect for negative voltage impulses. Variable voltage impulse amplitudes leads to the shifting of the energy levels of electode contacts resulting in changing of the overall current through the device. Structural charcterization have been performed using XRD analysis and SEM micrography. High-temperature current-voltage measurements combined with transport parameter analysis using Hall efect measurement system (HMS 3000) and Impedance Analyzer AC measurements allows deeper insigth into conduction mechanism of ferroelectric memristors.

  11. Large Conductance Switching in a Single-Molecule Device through Room Temperature Spin-Dependent Transport.

    PubMed

    Aragonès, Albert C; Aravena, Daniel; Cerdá, Jorge I; Acís-Castillo, Zulema; Li, Haipeng; Real, José Antonio; Sanz, Fausto; Hihath, Josh; Ruiz, Eliseo; Díez-Pérez, Ismael

    2016-01-13

    Controlling the spin of electrons in nanoscale electronic devices is one of the most promising topics aiming at developing devices with rapid and high density information storage capabilities. The interface magnetism or spinterface resulting from the interaction between a magnetic molecule and a metal surface, or vice versa, has become a key ingredient in creating nanoscale molecular devices with novel functionalities. Here, we present a single-molecule wire that displays large (>10000%) conductance switching by controlling the spin-dependent transport under ambient conditions (room temperature in a liquid cell). The molecular wire is built by trapping individual spin crossover Fe(II) complexes between one Au electrode and one ferromagnetic Ni electrode in an organic liquid medium. Large changes in the single-molecule conductance (>100-fold) are measured when the electrons flow from the Au electrode to either an α-up or a β-down spin-polarized Ni electrode. Our calculations show that the current flowing through such an interface appears to be strongly spin-polarized, thus resulting in the observed switching of the single-molecule wire conductance. The observation of such a high spin-dependent conductance switching in a single-molecule wire opens up a new door for the design and control of spin-polarized transport in nanoscale molecular devices at room temperature.

  12. Spatially resolved TiOx phases in switched RRAM devices using soft X-ray spectromicroscopy

    PubMed Central

    Carta, D.; Hitchcock, A. P.; Guttmann, P.; Regoutz, A.; Khiat, A.; Serb, A.; Gupta, I.; Prodromakis, T.

    2016-01-01

    Reduction in metal-oxide thin films has been suggested as the key mechanism responsible for forming conductive phases within solid-state memory devices, enabling their resistive switching capacity. The quantitative spatial identification of such conductive regions is a daunting task, particularly for metal-oxides capable of exhibiting multiple phases as in the case of TiOx. Here, we spatially resolve and chemically characterize distinct TiOx phases in localized regions of a TiOx–based memristive device by combining full-field transmission X-ray microscopy with soft X-ray spectroscopic analysis that is performed on lamella samples. We particularly show that electrically pre-switched devices in low-resistive states comprise reduced disordered phases with O/Ti ratios around 1.37 that aggregate in a ~100 nm highly localized region electrically conducting the top and bottom electrodes of the devices. We have also identified crystalline rutile and orthorhombic-like TiO2 phases in the region adjacent to the main reduced area, suggesting that the temperature increases locally up to 1000 K, validating the role of Joule heating in resistive switching. Contrary to previous studies, our approach enables to simultaneously investigate morphological and chemical changes in a quantitative manner without incurring difficulties imposed by interpretation of electron diffraction patterns acquired via conventional electron microscopy techniques. PMID:26891776

  13. Design and test of a Bennet's doubler device with mechanical switches for vibrational energy harvesting

    NASA Astrophysics Data System (ADS)

    Ben Ouanes, M. A.; Lu, Y.; Samaali, H.; Basset, P.; Najar, F.

    2016-11-01

    In this work, we demonstrate that the use of self-synchronized mechanical switches in replacement of diodes into electrostatic vibration energy harvesters (e-VEH) can lead to better power generation. Indeed, mechanical switches have the advantage of no leakage current and no threshold voltage. As a proof of concept, we use the Bennet's doubler electrostatic generator. The proposed e-VEH is composed of two variable capacitors triggered by a central electrode taken as an inertial mass. Ambient vibrations induce inertial forces on the central electrode, as a result a voltage doubling is obtained at each operating cycle. The mechanical switches are directly fixed to the moving electrode. In addition, no dedicated pre-charge is required: the system starts with ambient electrical charges. The device is fabricated and tested under harmonic motion. A comparison between the proposed design and those using diodes under the same operating conditions shows an experimental direct increase of the harvested electrical power of around 28%.

  14. The origin of polarity dependent switching type in solution processed Pt/TiO2/Pt memory devices

    NASA Astrophysics Data System (ADS)

    Biju, K. P.

    2015-06-01

    Resistive switching characteristics of sol-gel processed TiO2 thin films are investigated. The influence of polarity of the forming voltage on switching type in Pt/TiO2/Pt stack is investigated. Reliability and stability of the device is significantly improved by choosing a proper voltage polarity on electroforming. The device shows excellent switching properties such as high on/off ratio (> 20), good cycling endurance and long retention (> 104 s) and possible to use multi bit storage has been demonstrated. The switching mechanism is explained by a physical model based on localized generation/recovery of oxygen vacancy defects.

  15. All-optical reservoir computer based on saturation of absorption.

    PubMed

    Dejonckheere, Antoine; Duport, François; Smerieri, Anteo; Fang, Li; Oudar, Jean-Louis; Haelterman, Marc; Massar, Serge

    2014-05-05

    Reservoir computing is a new bio-inspired computation paradigm. It exploits a dynamical system driven by a time-dependent input to carry out computation. For efficient information processing, only a few parameters of the reservoir needs to be tuned, which makes it a promising framework for hardware implementation. Recently, electronic, opto-electronic and all-optical experimental reservoir computers were reported. In those implementations, the nonlinear response of the reservoir is provided by active devices such as optoelectronic modulators or optical amplifiers. By contrast, we propose here the first reservoir computer based on a fully passive nonlinearity, namely the saturable absorption of a semiconductor mirror. Our experimental setup constitutes an important step towards the development of ultrafast low-consumption analog computers.

  16. A phase insensitive all-optical router based on nonlinear lenslike planar waveguides.

    PubMed

    Mateo, Eduardo; Liñares, Jesús

    2005-05-02

    We present the design of an all-optical router based on the properties of both propagation and interaction of Gaussian beams in lenslike planar guides. Variational results of single co- and counterpropagation are derived and used to design three integrated optical devices, that is, a header extraction device, an optical bistable device and a data routing device, which perform an ultrafast, phase-insensitive and fiber compatible routing operation in the optical domain.

  17. Optical Square-Wave Clock Generation Based on an All-Optical Flip-Flop

    SciTech Connect

    Kaplan, A.M.; Agrawal, G.P.; Maywar, D.N.

    2010-03-10

    We demonstrate optical square-wave clock generation based on an all-optical flip-flop. The bistable output power from a resonant-type semiconductor optical amplifier (SOA) is switched ON and OFF by modulating its input with its output via cross-gain modulation in a traveling-wave SOA. All active components are driven by dc currents, and the wavelength and clock frequency are selectable. A clock frequency of 3.5 MHz is demonstrated, limited by the time of flight between bulk optical components. Optical square-wave clock signals are promising for applications in photonic integrated circuits and all-optical signal processing.

  18. A complementary switching mechanism for organic memory devices to regulate the conductance of binary states

    NASA Astrophysics Data System (ADS)

    Vyas, Giriraj; Dagar, Parveen; Sahu, Satyajit

    2016-06-01

    We have fabricated an organic non-volatile memory device wherein the ON/OFF current ratio has been controlled by varying the concentration of a small organic molecule, 2,3-Dichloro-5,6-dicyano-p-benzoquinone (DDQ), in an insulating matrix of a polymer Poly(4-vinylphenol) (PVP). A maximum ON-OFF ratio of 106 is obtained when the concentration of DDQ is half or 10 wt. % of PVP. In this process, the switching direction for the devices has also been altered, indicating the disparity in conduction mechanism. Conduction due to metal filament formation through the active material and the voltage dependent conformational change of the organic molecule seem to be the motivation behind the gradual change in the switching direction.

  19. Sharp-switching band-modulation back-gated devices in advanced FDSOI technology

    NASA Astrophysics Data System (ADS)

    El Dirani, Hassan; Fonteneau, Pascal; Solaro, Yohann; Legrand, Charles-Alex; Marin-Cudraz, David; Ferrari, Philippe; Cristoloveanu, Sorin

    2017-02-01

    A band-modulation device with a free top surface, named Z3-FET (Zero front-gate, Zero swing slope and Zero impact ionization) and fabricated in the most advanced Fully Depleted Silicon-On-Insulator technology, is demonstrated experimentally. Since the device has no front gate, the operation mechanism is controlled by two adjacent heavily doped buried ground planes acting as back-gates. Characteristics such as sharp quasi-vertical switching, low leakage, and tunable trigger voltage are measured and discussed. We explore several variants (thin and thick silicon or SiGe body) and show promising results in terms of high current, switching performance and ESD capability with relatively low back-gate and drain bias operation.

  20. Fabrication and Electrical Characterization of Correlated Oxide Field Effect Switching Devices for High Speed Electronics

    DTIC Science & Technology

    2015-11-19

    AFRL-AFOSR-VA-TR-2015-0381 Fabrication and Electrical Characterization of Correlated Oxide Field Effect Switching Devices for High Speed Electronics ...high speed electronics 5a. CONTRACT NUMBER 5b. GRANT NUMBER FA9550-12-1-0189 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) Shriram Ramanathan 5d... electronic properties of thin film correlated oxides was investigated via electrical transport measurements and electronic structure studies

  1. Rapidly Reconfigurable All-Optical Universal Logic Gates

    SciTech Connect

    Goddard, L L; Kallman, J S; Bond, T C

    2006-06-21

    We present designs and simulations for a highly cascadable, rapidly reconfigurable, all-optical, universal logic gate. We will discuss the gate's expected performance, e.g. speed, fanout, and contrast ratio, as a function of the device layout and biasing conditions. The gate is a three terminal on-chip device that consists of: (1) the input optical port, (2) the gate selection port, and (3) the output optical port. The device can be built monolithically using a standard multiple quantum well graded index separate confinement heterostructure laser configuration. The gate can be rapidly and repeatedly reprogrammed to perform any of the basic digital logic operations by using an appropriate analog electrical or optical signal at the gate selection port. Specifically, the same gate can be selected to execute one of the 2 basic unary operations (NOT or COPY), or one of the 6 binary operations (OR, XOR, AND, NOR, XNOR, or NAND), or one of the many logic operations involving more than two inputs. The speed of the gate for logic operations as well as for reprogramming the function of the gate is primarily limited to the small signal modulation speed of a laser, which can be on the order of tens of GHz. The reprogrammable nature of the universal gate offers maximum flexibility and interchangeability for the end user since the entire application of a photonic integrated circuit built from cascaded universal logic gates can be changed simply by adjusting the gate selection port signals.

  2. All-optical image processing with nonlinear liquid crystals

    NASA Astrophysics Data System (ADS)

    Hong, Kuan-Lun

    Liquid crystals are fascinating materials because of several advantages such as large optical birefringence, dielectric anisotropic, and easily compatible to most kinds of materials. Compared to the electro-optical properties of liquid crystals widely applied in displays and switching application, transparency through most parts of wavelengths also makes liquid crystals a better candidate for all-optical processing. The fast response time of liquid crystals resulting from multiple nonlinear effects, such as thermal and density effect can even make real-time processing realized. In addition, blue phase liquid crystals with spontaneously self-assembled three dimensional cubic structures attracted academic attention. In my dissertation, I will divide the whole contents into six parts. In Chapter 1, a brief introduction of liquid crystals is presented, including the current progress and the classification of liquid crystals. Anisotropy and laser induced director axis reorientation is presented in Chapter 2. In Chapter 3, I will solve the electrostrictive coupled equation and analyze the laser induced thermal and density effect in both static and dynamic ways. Furthermore, a dynamic simulation of laser induced density fluctuation is proposed by applying finite element method. In Chapter 4, two image processing setups are presented. One is the intensity inversion experiment in which intensity dependent phase modulation is the mechanism. The other is the wavelength conversion experiment in which I can read the invisible image with a visible probe beam. Both experiments are accompanied with simulations to realize the matching between the theories and practical experiment results. In Chapter 5, optical properties of blue phase liquid crystals will be introduced and discussed. The results of grating diffractions and thermal refractive index gradient are presented in this chapter. In addition, fiber arrays imaging and switching with BPLCs will be included in this chapter

  3. Strong coupling and high-contrast all-optical modulation in atomic cladding waveguides

    PubMed Central

    Stern, Liron; Desiatov, Boris; Mazurski, Noa; Levy, Uriel

    2017-01-01

    In recent years, there has been marked increase in research aimed to introduce alkali vapours into guided-wave configurations. Owing to the significant reduction in device dimensions, the increase in density of states, the interaction with surfaces and primarily the high intensities carried along the structure, a plethora of light–vapour interactions can be studied. Moreover, such platform may exhibit new functionalities such as low-power nonlinear light–matter interactions. One immense challenge is to study the effects of quantum coherence and shifts in nanoscale waveguides, characterized by ultra-small mode areas and fast dynamics. Here, we construct a highly compact 17 mm long serpentine silicon-nitride atomic vapour cladding waveguide. Fascinating and important phenomena such as van-der-Waals shifts, dynamical stark shifts and coherent effects such as strong coupling (in the form of Autler–Townes splitting) are observed. Some of these effects may play an important role in applications such as all-optical switching, frequency referencing and magnetometry. PMID:28181510

  4. Strong coupling and high-contrast all-optical modulation in atomic cladding waveguides

    NASA Astrophysics Data System (ADS)

    Stern, Liron; Desiatov, Boris; Mazurski, Noa; Levy, Uriel

    2017-02-01

    In recent years, there has been marked increase in research aimed to introduce alkali vapours into guided-wave configurations. Owing to the significant reduction in device dimensions, the increase in density of states, the interaction with surfaces and primarily the high intensities carried along the structure, a plethora of light-vapour interactions can be studied. Moreover, such platform may exhibit new functionalities such as low-power nonlinear light-matter interactions. One immense challenge is to study the effects of quantum coherence and shifts in nanoscale waveguides, characterized by ultra-small mode areas and fast dynamics. Here, we construct a highly compact 17 mm long serpentine silicon-nitride atomic vapour cladding waveguide. Fascinating and important phenomena such as van-der-Waals shifts, dynamical stark shifts and coherent effects such as strong coupling (in the form of Autler-Townes splitting) are observed. Some of these effects may play an important role in applications such as all-optical switching, frequency referencing and magnetometry.

  5. All-optical tunability of microdisk lasers via photo-adressable polyelectrolyte functionalization.

    PubMed

    Piegdon, K A; Lexow, M; Grundmeier, G; Kitzerow, H-S; Pärschke, K; Mergel, D; Reuter, D; Wieck, A D; Meier, C

    2012-03-12

    Photoactive materials are highly promising candidates for novel applications as they enable all-optical control of photonic devices. Photochromic molecules exhibit a reversible change of their dielectric function upon irradiation with light of proper wavelength. The trans- and cis-isomers of azobenzene exhibit different absorption properties due to the effect of the configuration on the polarizability of the molecule. Here, we introduce a novel molecular/semiconductor hybrid device which is fully tunable by all-optical means via the integration of a semiconductor microdisk into a photo-adressable polyelectrolyte material. We demonstrate that such polyelectrolyte superlattices can be used to tune semiconductor photonic resonators with high precision and without any significant degeneration of device performance. Moreover, we demonstrate an all-optically tunable laser based on this hybrid concept.

  6. Anomalous reduction of the switching voltage of Bi-doped Ge{sub 0.5}Se{sub 0.5} ovonic threshold switching devices

    SciTech Connect

    Seo, Juhee; Ahn, Hyung-Woo; Shin, Sang-yeol; Cheong, Byung-ki; Lee, Suyoun

    2014-04-14

    Switching devices based on Ovonic Threshold Switching (OTS) have been considered as a solution to overcoming limitations of Si-based electronic devices, but the reduction of switching voltage is a major challenge. Here, we investigated the effect of Bi-doping in Ge{sub 0.5}Se{sub 0.5} thin films on their thermal, optical, electrical properties, as well as on the characteristics of OTS devices. As Bi increased, it was found that both of the optical energy gap (E{sub g}{sup opt}) and the depth of trap states decreased resulting in a drastic reduction of the threshold voltage (V{sub th}) by over 50%. In addition, E{sub g}{sup opt} was found to be about three times of the conduction activation energy for each composition. These results are explained in terms of the Mott delocalization effect by doping Bi.

  7. Quaternary Galois field adder based all-optical multivalued logic circuits.

    PubMed

    Chattopadhyay, Tanay; Taraphdar, Chinmoy; Roy, Jitendra Nath

    2009-08-01

    Galois field (GF) algebraic expressions have been found to be promising choices for reversible and quantum implementation of multivalued logic. For the first time to our knowledge, we developed GF(4) adder multivalued (four valued) logic circuits in an all-optical domain. The principle and possibilities of an all-optical GF(4) adder circuit are described. The theoretical model is presented and verified through numerical simulation. The quaternary inverter, successor, clockwise cycle, and counterclockwise cycle gates are proposed with the help of the all-optical GF(4) adder circuit. In this scheme different quaternary logical states are represented by different polarized light. A terahertz optical asymmetric demultiplexer interferometric switch plays an important role in this scheme.

  8. All-optical flip-flop based on vertical cavity semiconductor optical amplifiers.

    PubMed

    Song, Deqiang; Gauss, Veronica; Zhang, Haijiang; Gross, Matthias; Wen, Pengyue; Esener, Sadik

    2007-10-15

    We report the operation of an all-optical set-reset (SR) flip-flop based on vertical cavity semiconductor optical amplifiers (VCSOAs). This flip-flop is cascadable, has low optical switching power (~10 microW), and has the potential to be integrated on a small footprint (~100 microm(2)). The flip-flop is composed of two cross-coupled electrically pumped VCSOA inverters and uses the principles of cross-gain modulation, polarization gain anisotropy, and highly nonlinear gain characteristics to achieve flip-flop functionality. We believe that, when integrated on chip, this type of all-optical flip-flop opens new prospects for implementing all-optical fast memories and timing regeneration circuits.

  9. Low power consumption and continuously tunable all-optical microwave filter based on an opto-mechanical microring resonator.

    PubMed

    Liu, Li; Yang, Yue; Li, Zhihua; Jin, Xing; Mo, Wenqin; Liu, Xing

    2017-01-23

    We propose and experimentally demonstrate a continuously tunable all-optical microwave filter using a silicon opto-mechanical microring resonator (MRR). By finely adjusting the pump light with submilliwatt power level, transmission spectrum of the MRR could be continuously shifted based on the nonlinear effects, including the opto-mechanical effect and thermo-optic effect. Therefore, in the case of optical single sideband (OSSB) modulation, the frequency intervals between the optical carrier (near one MRR resonance) and the corresponding resonance could be flexibly manipulated, which is the critical factor to achieve continuously tunable microwave photonic filter (MPF). In the experiment, the central frequency of the MPF could be continuously tuned from 6 GHz to 19 GHz with the pump power lower than -2.5 dBm. The proposed opto-mechanical device is competent to process microwave signals with dominant advantages, such as compact footprint, all-optical control and low power consumption. In the future, using light to control light, the opto-mechanical structure on silicon platforms might have many other potential applications in microwave systems, such as microwave switch.

  10. Application of bistable optical logic gate arrays to all-optical digital parallel processing

    NASA Astrophysics Data System (ADS)

    Walker, A. C.

    1986-05-01

    Arrays of bistable optical gates can form the basis of an all-optical digital parallel processor. Two classes of signal input geometry exist - on- and off-axis - and lead to distinctly different device characteristics. The optical implementation of multisignal fan-in to an array of intrinsically bistable optical gates using the more efficient off-axis option is discussed together with the construction of programmable read/write memories from optically bistable devices. Finally the design of a demonstration all-optical parallel processor incorporating these concepts is presented.

  11. Routing and wavelength assignment based on normalized resource and constraints for all-optical network

    NASA Astrophysics Data System (ADS)

    Joo, Seong-Soon; Nam, Hyun-Soon; Lim, Chang-Kyu

    2003-08-01

    With the rapid growth of the Optical Internet, high capacity pipes is finally destined to support end-to-end IP on the WDM optical network. Newly launched 2D MEMS optical switching module in the market supports that expectations of upcoming a transparent optical cross-connect in the network have encouraged the field applicable research on establishing real all-optical transparent network. To open up a customer-driven bandwidth services, design of the optical transport network becomes more challenging task in terms of optimal network resource usage. This paper presents a practical approach to finding a route and wavelength assignment for wavelength routed all-optical network, which has λ-plane OXC switches and wavelength converters, and supports that optical paths are randomly set up and released by dynamic wavelength provisioning to create bandwidth between end users with timescales on the order of seconds or milliseconds. We suggest three constraints to make the RWA problem become more practical one on deployment for wavelength routed all-optical network in network view: limitation on maximum hop of a route within bearable optical network impairments, limitation on minimum hops to travel before converting a wavelength, and limitation on calculation time to find all routes for connections requested at once. We design the NRCD (Normalized Resource and Constraints for All-Optical Network RWA Design) algorithm for the Tera OXC: network resource for a route is calculated by the number of internal switching paths established in each OXC nodes on the route, and is normalized by ratio of number of paths established and number of paths equipped in a node. We show that it fits for the RWA algorithm of the wavelength routed all-optical network through real experiments on the distributed objects platform.

  12. Coupling Resistive Switching Devices with Neurons: State of the Art and Perspectives

    PubMed Central

    Chiolerio, Alessandro; Chiappalone, Michela; Ariano, Paolo; Bocchini, Sergio

    2017-01-01

    Here we provide the state-of-the-art of bioelectronic interfacing between biological neuronal systems and artificial components, focusing the attention on the potentiality offered by intrinsically neuromorphic synthetic devices based on Resistive Switching (RS). Neuromorphic engineering is outside the scopes of this Perspective. Instead, our focus is on those materials and devices featuring genuine physical effects that could be sought as non-linearity, plasticity, excitation, and extinction which could be directly and more naturally coupled with living biological systems. In view of important applications, such as prosthetics and future life augmentation, a cybernetic parallelism is traced, between biological and artificial systems. We will discuss how such intrinsic features could reduce the complexity of conditioning networks for a more natural direct connection between biological and synthetic worlds. Putting together living systems with RS devices could represent a feasible though innovative perspective for the future of bionics. PMID:28261048

  13. An all-optical method of developing data communication system with error detection circuit

    NASA Astrophysics Data System (ADS)

    Mandal, Sumana; Mandal, Dhoumendra; Garai, Sisir Kumar

    2014-03-01

    The basic criterion of data communication is that received data should exactly be the replica of the transmitting data. If any error is introduced in the received data, then data transmission should be stopped immediately. In this article the authors have developed an all-optical method of data communication system with error detection mechanism that works with frequency encoded data. Basic building blocks of the proposed data communication scheme are parity generator and parity checker which are developed from all optical XOR logic gates. Simulation results testify the feasibility of the proposed scheme. These logic gates are developed exploiting nonlinear polarization rotation based frequency conversion and switching character of semiconductor optical amplifiers. The scheme with frequency encoded data, high speed of frequency conversion and polarization switching action of semiconductor optical amplifier offers secure, error free, faster data communication network.

  14. Method of developing all-optical trinary JK, D-type, and T-type flip-flops using semiconductor optical amplifiers.

    PubMed

    Garai, Sisir Kumar

    2012-04-10

    To meet the demand of very fast and agile optical networks, the optical processors in a network system should have a very fast execution rate, large information handling, and large information storage capacities. Multivalued logic operations and multistate optical flip-flops are the basic building blocks for such fast running optical computing and data processing systems. In the past two decades, many methods of implementing all-optical flip-flops have been proposed. Most of these suffer from speed limitations because of the low switching response of active devices. The frequency encoding technique has been used because of its many advantages. It can preserve its identity throughout data communication irrespective of loss of light energy due to reflection, refraction, attenuation, etc. The action of polarization-rotation-based very fast switching of semiconductor optical amplifiers increases processing speed. At the same time, tristate optical flip-flops increase information handling capacity.

  15. Study of mode locked fiber lasers and all-optical logic

    NASA Astrophysics Data System (ADS)

    Dong, Hao

    Mode locked fiber laser and all-optical logic technologies are building blocks for the construction of all-optical networks in the information era. This Ph.D dissertation investigates essential mechanism related to the mode locked lasers and all-optical logic such as the multiwavelength laser source, multiwavelength pulses, high-speed short pulse generation, clock recovery and all optical Boolean functions. First, a CW multiwavelength laser source oscillating in 75 wavelengths is proposed based on the semiconductor optical amplifier (SOA) enclosed in the fiber ring cavity, and the stability of the laser source will be investigated in detail. In the optical time division multiplexing (OTDM) system, it's of vital importance to generate optical pulses with narrow pulsewidth, high repetition rate, and long-term stability, towards this goal, an 80GHz short pulse train generation system is presented. A high speed clock recovery operation is also demonstrated based on the Mach-Zehnder (MZ) modulator; the conversion efficiency of the proposed clock recovery circuit is analyzed numerically. In addition, effective all-optical logic functions are also proposed to overcome a critical speed limit, Boolean OR, NOR, and AND functions are reported at the speed up to 80Gb/s using SOA based devices. These are the highest reported operating speed, at which the proposed all optical logic gates have been characterized.

  16. Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices.

    PubMed

    Jo, Jaesung; Choi, Woo Young; Park, Jung-Dong; Shim, Jae Won; Yu, Hyun-Yong; Shin, Changhwan

    2015-07-08

    Because of the "Boltzmann tyranny" (i.e., the nonscalability of thermal voltage), a certain minimum gate voltage in metal-oxide-semiconductor (MOS) devices is required for a 10-fold increase in drain-to-source current. The subthreshold slope (SS) in MOS devices is, at best, 60 mV/decade at 300 K. Negative capacitance in organic/ferroelectric materials is proposed in order to address this physical limitation in MOS technology. Here, we experimentally demonstrate the steep switching behavior of a MOS device-that is, SS ∼ 18 mV/decade (much less than 60 mV/decade) at 300 K-by taking advantage of negative capacitance in a MOS gate stack. This negative capacitance, originating from the dynamics of the stored energy in a phase transition of a ferroelectric material, can achieve the step-up conversion of internal voltage (i.e., internal voltage amplification in a MOS device). With the aid of a series-connected negative capacitor as an assistive device, the surface potential in the MOS device becomes higher than the applied gate voltage, so that a SS of 18 mV/decade at 300 K is reliably observed.

  17. Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

    DOEpatents

    Tour, James M.; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

    2015-09-08

    In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the gap region between the first electrical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

  18. Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

    DOEpatents

    Tour, James M; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

    2013-11-26

    In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the the gap region between the first electical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

  19. Towards developing a compact model for magnetization switching in straintronics magnetic random access memory devices

    NASA Astrophysics Data System (ADS)

    Barangi, Mahmood; Erementchouk, Mikhail; Mazumder, Pinaki

    2016-08-01

    Strain-mediated magnetization switching in a magnetic tunneling junction (MTJ) by exploiting a combination of piezoelectricity and magnetostriction has been proposed as an energy efficient alternative to spin transfer torque (STT) and field induced magnetization switching methods in MTJ-based magnetic random access memories (MRAM). Theoretical studies have shown the inherent advantages of strain-assisted switching, and the dynamic response of the magnetization has been modeled using the Landau-Lifshitz-Gilbert (LLG) equation. However, an attempt to use LLG for simulating dynamics of individual elements in large-scale simulations of multi-megabyte straintronics MRAM leads to extremely time-consuming calculations. Hence, a compact analytical solution, predicting the flipping delay of the magnetization vector in the nanomagnet under stress, combined with a liberal approximation of the LLG dynamics in the straintronics MTJ, can lead to a simplified model of the device suited for fast large-scale simulations of multi-megabyte straintronics MRAMs. In this work, a tensor-based approach is developed to study the dynamic behavior of the stressed nanomagnet. First, using the developed method, the effect of stress on the switching behavior of the magnetization is investigated to realize the margins between the underdamped and overdamped regimes. The latter helps the designer realize the oscillatory behavior of the magnetization when settling along the minor axis, and the dependency of oscillations on the stress level and the damping factor. Next, a theoretical model to predict the flipping delay of the magnetization vector is developed and tested against LLG-based numerical simulations to confirm the accuracy of findings. Lastly, the obtained delay is incorporated into the approximate solutions of the LLG dynamics, in order to create a compact model to liberally and quickly simulate the magnetization dynamics of the MTJ under stress. Using the developed delay equation, the

  20. Photonic encryption : modeling and functional analysis of all optical logic.

    SciTech Connect

    Tang, Jason D.; Schroeppel, Richard Crabtree; Robertson, Perry J.

    2004-10-01

    With the build-out of large transport networks utilizing optical technologies, more and more capacity is being made available. Innovations in Dense Wave Division Multiplexing (DWDM) and the elimination of optical-electrical-optical conversions have brought on advances in communication speeds as we move into 10 Gigabit Ethernet and above. Of course, there is a need to encrypt data on these optical links as the data traverses public and private network backbones. Unfortunately, as the communications infrastructure becomes increasingly optical, advances in encryption (done electronically) have failed to keep up. This project examines the use of optical logic for implementing encryption in the photonic domain to achieve the requisite encryption rates. This paper documents the innovations and advances of work first detailed in 'Photonic Encryption using All Optical Logic,' [1]. A discussion of underlying concepts can be found in SAND2003-4474. In order to realize photonic encryption designs, technology developed for electrical logic circuits must be translated to the photonic regime. This paper examines S-SEED devices and how discrete logic elements can be interconnected and cascaded to form an optical circuit. Because there is no known software that can model these devices at a circuit level, the functionality of S-SEED devices in an optical circuit was modeled in PSpice. PSpice allows modeling of the macro characteristics of the devices in context of a logic element as opposed to device level computational modeling. By representing light intensity as voltage, 'black box' models are generated that accurately represent the intensity response and logic levels in both technologies. By modeling the behavior at the systems level, one can incorporate systems design tools and a simulation environment to aid in the overall functional design. Each black box model takes certain parameters (reflectance, intensity, input response), and models the optical ripple and time delay

  1. Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device

    NASA Astrophysics Data System (ADS)

    Chen, C.; Yang, Y. C.; Zeng, F.; Pan, F.

    2010-08-01

    Highly stable and reproducible bipolar resistive switching effects are reported on Cu/AlN/Pt devices. Memory characteristics including large memory window of 103, long retention time of >106 s and good endurance of >103 were demonstrated. It is concluded that the reset current decreases as compliance current decreases, which provides an approach to suppress power consumption. The dominant conduction mechanisms of low resistance state and high resistance state were verified by Ohmic behavior and trap-controlled space charge limited current, respectively. The memory effect is explained by the model concerning redox reaction mediated formation and rupture of the conducting filament in AlN films.

  2. Bipolar resistive switching in room temperature grown disordered vanadium oxide thin-film devices

    NASA Astrophysics Data System (ADS)

    Wong, Franklin J.; Sriram, Tirunelveli S.; Smith, Brian R.; Ramanathan, Shriram

    2013-09-01

    We demonstrate bipolar switching with high OFF/ON resistance ratios (>104) in Pt/vanadium oxide/Cu structures deposited entirely at room temperature. The SET (RESET) process occurs when negative (positive) bias is applied to the top Cu electrode. The vanadium oxide (VOx) films are amorphous and close to the vanadium pentoxide stoichiometry. We also investigated Cu/VOx/W structures, reversing the position of the Cu electrode, and found the same polarity dependence with respect to the top and bottom electrodes, which suggests that the bipolar nature is linked to the VOx layer itself. Bipolar switching can be observed at 100 °C, indicating that it not due to a temperature-induced metal-insulator transition of a vanadium dioxide second phase. We discuss how ionic drift can lead to the bipolar electrical behavior of our junctions, similar to those observed in devices based on several other defective oxides. Such low-temperature processed oxide switches could be of relevance to back-end or package integration processing schemes.

  3. Note: Suppression of kHz-frequency switching noise in digital micro-mirror devices

    NASA Astrophysics Data System (ADS)

    Hueck, Klaus; Mazurenko, Anton; Luick, Niclas; Lompe, Thomas; Moritz, Henning

    2017-01-01

    High resolution digital micro-mirror devices (DMDs) make it possible to produce nearly arbitrary light fields with high accuracy, reproducibility, and low optical aberrations. However, using these devices to trap and manipulate ultracold atomic systems for, e.g., quantum simulation is often complicated by the presence of kHz-frequency switching noise. Here we demonstrate a simple hardware extension that solves this problem and makes it possible to produce truly static light fields. This modification leads to a 47 fold increase in the time that we can hold ultracold 6Li atoms in a dipole potential created with the DMD. Finally, we provide reliable and user friendly APIs written in Matlab and Python to control the DMD.

  4. Realization of transient memory-loss with NiO-based resistive switching device

    NASA Astrophysics Data System (ADS)

    Hu, S. G.; Liu, Y.; Chen, T. P.; Liu, Z.; Yu, Q.; Deng, L. J.; Yin, Y.; Hosaka, Sumio

    2012-11-01

    A resistive switching device based on a nickel-rich nickel oxide thin film, which exhibits inherent learning and memory-loss abilities, is reported in this work. The conductance of the device gradually increases and finally saturates with the number of voltage pulses (or voltage sweepings), which is analogous to the behavior of the short-term and long-term memory in the human brain. Furthermore, the number of the voltage pulses (or sweeping cycles) required to achieve a given conductance state increases with the interval between two consecutive voltage pulses (or sweeping cycles), which is attributed to the heat diffusion in the material of the conductive filaments formed in the nickel oxide thin film. The phenomenon resembles the behavior of the human brain, i.e., forgetting starts immediately after an impression, a larger interval of the impressions leads to more memory loss, thus the memorization needs more impressions to enhance.

  5. Laterally configured resistive switching device based on transition-metal nano-gap electrode on Gd oxide

    SciTech Connect

    Kawakita, Masatoshi; Okabe, Kyota; Kimura, Takashi

    2016-01-11

    We have developed a fabrication process for a laterally configured resistive switching device based on a Gd oxide. A nano-gap electrode connected by a Gd oxide with the ideal interfaces has been created by adapting the electro-migration method in a metal/GdO{sub x} bilayer system. Bipolar set and reset operations have been clearly observed in the Pt/GdO{sub x} system similarly in the vertical device based on GdO{sub x}. Interestingly, we were able to observe a clear bipolar switching also in a ferromagnetic CoFeB nano-gap electrode with better stability compared to the Pt/GdO{sub x} device. The superior performance of the CoFeB/GdO{sub x} device implies the importance of the spin on the resistive switching.

  6. Ultralow-power switching via defect engineering in germanium telluride phase-change memory devices

    PubMed Central

    Nukala, Pavan; Lin, Chia-Chun; Composto, Russell; Agarwal, Ritesh

    2016-01-01

    Crystal–amorphous transformation achieved via the melt-quench pathway in phase-change memory involves fundamentally inefficient energy conversion events; and this translates to large switching current densities, responsible for chemical segregation and device degradation. Alternatively, introducing defects in the crystalline phase can engineer carrier localization effects enhancing carrier–lattice coupling; and this can efficiently extract work required to introduce bond distortions necessary for amorphization from input electrical energy. Here, by pre-inducing extended defects and thus carrier localization effects in crystalline GeTe via high-energy ion irradiation, we show tremendous improvement in amorphization current densities (0.13–0.6 MA cm−2) compared with the melt-quench strategy (∼50 MA cm−2). We show scaling behaviour and good reversibility on these devices, and explore several intermediate resistance states that are accessible during both amorphization and recrystallization pathways. Existence of multiple resistance states, along with ultralow-power switching and scaling capabilities, makes this approach promising in context of low-power memory and neuromorphic computation. PMID:26805748

  7. Ultralow-power switching via defect engineering in germanium telluride phase-change memory devices

    NASA Astrophysics Data System (ADS)

    Nukala, Pavan; Lin, Chia-Chun; Composto, Russell; Agarwal, Ritesh

    2016-01-01

    Crystal-amorphous transformation achieved via the melt-quench pathway in phase-change memory involves fundamentally inefficient energy conversion events; and this translates to large switching current densities, responsible for chemical segregation and device degradation. Alternatively, introducing defects in the crystalline phase can engineer carrier localization effects enhancing carrier-lattice coupling; and this can efficiently extract work required to introduce bond distortions necessary for amorphization from input electrical energy. Here, by pre-inducing extended defects and thus carrier localization effects in crystalline GeTe via high-energy ion irradiation, we show tremendous improvement in amorphization current densities (0.13-0.6 MA cm-2) compared with the melt-quench strategy (~50 MA cm-2). We show scaling behaviour and good reversibility on these devices, and explore several intermediate resistance states that are accessible during both amorphization and recrystallization pathways. Existence of multiple resistance states, along with ultralow-power switching and scaling capabilities, makes this approach promising in context of low-power memory and neuromorphic computation.

  8. High-order all-optical differential equation solver based on microring resonators.

    PubMed

    Tan, Sisi; Xiang, Lei; Zou, Jinghui; Zhang, Qiang; Wu, Zhao; Yu, Yu; Dong, Jianji; Zhang, Xinliang

    2013-10-01

    We propose and experimentally demonstrate a feasible integrated scheme to solve all-optical differential equations using microring resonators (MRRs) that is capable of solving first- and second-order linear ordinary differential equations with different constant coefficients. Employing two cascaded MRRs with different radii, an excellent agreement between the numerical simulation and the experimental results is obtained. Due to the inherent merits of silicon-based devices for all-optical computing, such as low power consumption, small size, and high speed, this finding may motivate the development of integrated optical signal processors and further extend optical computing technologies.

  9. All-optical diode with photonic multilayers based on asymmetric light localization

    NASA Astrophysics Data System (ADS)

    Jin, Li; Zhou, Jun; Yang, Mingyang; Xue, Chunhua; He, Miao

    2011-03-01

    An all-optical diode (AOD) with structure (AB)m(BA)n(BBAA)k is proposed based on asymmetric light localization, and its optical bistability are numerically investigated by the nonlinear transfer matrix method. Research results show that the behavior of the AOD strongly depends on the period number m, n, and k, the transmission direction of the AOD is related to the values of m and n, while k affects the transmission contrast of the AOD. It is a significant reference for the design of all-optical signal processing devices.

  10. A study of high repetition rate pulse generation and all-optical add/drop multiplexing

    NASA Astrophysics Data System (ADS)

    Chen, Hongmin

    Ultra high-speed optical time-division-multiplexed (OTDM) transmission technologies are essential for the construction of ultra high-speed all-optical networks needed in the information era. In this Ph. D thesis dissertation, essential mechanisms associated with ultra high speed OTDM transmission systems, such as, high speed ultra short pulse generation, all optical demultiplexing and all optical add/drop multiplexing, have been studied. Both experimental demonstrations and numerical simulations have been performed. In order to realize high-speed optical TDM systems, high repetition rate, ultra short pulses are needed. A rational harmonic mode-locked ring fiber laser has been used to produce ultrashort pulses, the pulse jitter will be eliminated using a Phase-Locked-Loop (PLL), and the self-pulsation has been suppressed using a semiconductor optical amplifier (SOA). Sub pico-second pulses are very important for all optical sampling in the ultrahigh-speed OTDM transmission system. In this thesis, a two stage compression scheme utilizing the nonlinearity and dispersion of the optical fibers has been constructed and used to compress the gain switched DFB laser pulses. Also a nonlinear optical loop mirror has been constructed to suppress the wings associated with nonlinear compression. Pedestal free, transform-limited pulses with pulse widths in range of 0.2 to 0.4 ps have been generated. LiNbO3 modulators play a very important role in fiber optical communication systems. In this thesis, LiNbO3 modulators have been used to perform high repetition rate pulse generation, all optical demultiplexing and all optical add/drop for the TDM transmission system.

  11. Switching and memory characteristics of thin films of an ambipolar organic compound: effects of device processing and electrode materials

    NASA Astrophysics Data System (ADS)

    Lee, Myung-Won; Pearson, Christopher; Moon, Tae Jung; Fisher, Alison L.; Petty, Michael C.

    2014-12-01

    We report on the effects of device processing conditions, and of changing the electrode materials, on the switching and negative differential resistance (NDR) behaviour of metal/organic thin film/metal structures. The organic material was an ambipolar molecule containing both electron transporting (oxadiazole) and hole transporting (carbazole) chemical groups. Switching and NDR effects are observed for device architectures with both electrodes consisting of aluminium; optimized switching behaviour is achieved for structures incorporating gold nanoparticles. If one of the Al electrodes is replaced by a higher work function metal or coated with an electron-blocking layer, switching and NDR are no longer observed. The results are consistent with a model based on the creation and destruction of Al filaments within the thin organic layer.

  12. Polarization encoded all-optical quaternary R-S flip-flop using binary latch

    NASA Astrophysics Data System (ADS)

    Chattopadhyay, Tanay; Roy, Jitendra Nath; Chakraborty, Ajoy Kumar

    2009-04-01

    The developments of different multi-valued logic (MVL) systems have received considerable interests in recent years all over the world. In electronics, efforts have already been made to incorporate multi-valued system in logic and arithmetic data processing. But, very little efforts have been given in realization of MVL with optics. In this paper we present novel designs of certain all-optical circuits that can be used for realizing multi-valued logic functions. Polarization encoded all-optical quaternary (4-valued) R-S flip-flop is proposed and described. Two key circuits (all-optical encoder/decoder and a binary latch) are designed first. They are used to realize quaternary flip-flop in all-optical domain. Here the different quaternary logical states are represented by different polarized state of light. Terahertz Optical Asymmetric Demultiplexer (TOAD) based interferometric switch can take an important role. Computer simulation result confirming described methods and conclusion are given in this paper.

  13. Elastic all-optical multi-hop interconnection in data centers with adaptive spectrum allocation

    NASA Astrophysics Data System (ADS)

    Hong, Yuanyuan; Hong, Xuezhi; Chen, Jiajia; He, Sailing

    2017-01-01

    In this paper, a novel flex-grid all-optical interconnect scheme that supports transparent multi-hop connections in data centers is proposed. An inter-rack all-optical multi-hop connection is realized with an optical loop employed at flex-grid wavelength selective switches (WSSs) in an intermediate rack rather than by relaying through optical-electric-optical (O-E-O) conversions. Compared with the conventional O-E-O based approach, the proposed all-optical scheme is able to off-load the traffic at intermediate racks, leading to a reduction of the power consumption and cost. The transmission performance of the proposed flex-grid multi-hop all-optical interconnect scheme with various modulation formats, including both coherently detected and directly detected approaches, are investigated by Monte-Carlo simulations. To enhance the spectrum efficiency (SE), number-of-hop adaptive bandwidth allocation is introduced. Numerical results show that the SE can be improved by up to 33.3% at 40 Gbps, and by up to 25% at 100 Gbps. The impact of parameters, such as targeted bit error rate (BER) level and insertion loss of components, on the transmission performance of the proposed approach are also explored. The results show that the maximum SE improvement of the adaptive approach over the non-adaptive one is enhanced with the decrease of the targeted BER levels and the component insertion loss.

  14. Dynamics of an all-optical atomic spin gyroscope.

    PubMed

    Fang, Jiancheng; Wan, Shuangai; Yuan, Heng

    2013-10-20

    We present the transfer function of an all-optical atomic spin gyroscope through a series of differential equations and validate the transfer function by experimental test. A transfer function is the basis for further control system design. We build the differential equations based on a complete set of Bloch equations describing the all-optical atomic spin gyroscope, and obtain the transfer function through application of the Laplace transformation to these differential equations. Moreover, we experimentally validate the transfer function in an all-optical Cs-Xe129 atomic spin gyroscope through a series of step responses. This transfer function is convenient for analysis of the form of control system required. Furthermore, it is available for the design of the control system specifically to improve the performance of all-optical atomic spin gyroscopes.

  15. All-optical gates based on photonic crystal resonators

    NASA Astrophysics Data System (ADS)

    Moille, Grégory; De Rossi, Alfredo; Combrié, Sylvain

    2016-04-01

    We briefly review the technology of advanced nonlinear resonators for all-optical gating with a specific focus on the application of high-performance signal sampling and on the properties of III-V semiconductor photonic crystals

  16. Investigations of quantum effect semiconductor devices: The tunnel switch diode and the velocity modulation transistor

    NASA Astrophysics Data System (ADS)

    Daniel, Erik Stephen

    In this thesis we present the results of experimental and theoretical studies of two quantum effect devices--the Tunnel Switch Diode (TSD) and the Velocity Modulation Transistor (VMT). We show that TSD devices can be fabricated such that they behave (semi-quantitatively) as predicted by simple analytical models and more advanced drift-diffusion simulations. These devices possess characteristics, such as on-state currents which range over nearly five orders of magnitude, and on/off current ratios which are even larger, which may allow for a practical implementation of a very dense transistorless SRAM architecture and possibly other novel circuit designs. We demonstrate that many TSD properties can be explained by analogy to a thyristor. In particular, we show that the thin oxide layer in the TSD plays a critical role, and that this can be understood in terms of current injection through the oxide, analogous to transport through the "current limiting" layer in a thyristor. As this oxide layer can be subjected to extreme stress during device operation, we have studied the effect of this stress on device behavior. We demonstrate many significant stress-dependent effects, and identify structures and operation modes which minimize these effects. We propose an InAs/GaSb/AlSb VMT which may allow for larger conductance modulation and higher temperature operation than has been demonstrated in similar GaAs/AlAs structures. Fundamental differences in device operation in the two materials systems and unusual transport mechanisms in the InAs/GaSb/AlSb system are identified as a result of the band lineups in the two systems. Boltzmann transport simulations are developed and presented, allowing a qualitative description of the transport in the InAs/GaSb/AlSb structure. Band structure calculations are carried out, allowing for device design. While no working VMT devices were produced, this is believed to be due to processing and crystal growth problems. We present methods used to

  17. Facile Synthesis of Co9Se8 Quantum Dots as Charge Traps for Flexible Organic Resistive Switching Memory Device.

    PubMed

    Zhang, Peng; Xu, Benhua; Gao, Cunxu; Chen, Guilin; Gao, Meizhen

    2016-11-09

    Uniform Co9Se8 quantum dots (CSQDs) were successfully synthesized through a facile solvothermal method. The obtained CSQDs with average size of 3.2 ± 0.1 nm and thickness of 1.8 ± 0.2 nm were demonstrated good stability and strong fluorescence under UV light after being easily dispersed in both of N,N-dimethylformamide (DMF) and deionized water. We demonstrated the flexible resistive switching memory device based on the hybridization of CSQDs and polyvinylpyrrolidone (PVP) (CSQDs-PVP). The device with the Al/CSQDs-PVP/Pt/poly(ethylene terephthalate) (PET) structure represented excellent switching parameters such as high ON/OFF current ratio, low operating voltages, good stability, and flexibility. The flexible resistive switching memory device based on hybridization of CSQDs and PVP has a great potential to be used in flexible and high-performance memory applications.

  18. All-optical modulator cells based on AlGaAs/GaAs/InGaAs 905-nm laser heterostructures

    NASA Astrophysics Data System (ADS)

    Podoskin, A. A.; Shashkin, I. S.; Slipchenko, S. O.; Pikhtin, N. A.; Tarasov, I. S.

    2017-01-01

    All-optical cells based on AlGaAs/GaAs/InGaAs laser heterostructures for a 905-nm wavelength have been developed, which operate in the regime of optical-power modulation by means of controlled generation switching between the Fabry-Perot cavity modes and high-Q closed mode. At a modulated power of 1.6 W, a mode-switching time of 1.2 ns and smaller is achieved.

  19. Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis.

    PubMed

    Younis, Adnan; Chu, Dewei; Li, Sean

    2015-09-01

    Further progress in high-performance microelectronic devices relies on the development of novel materials and device architectures. However, the components and designs that are currently in use have reached their physical limits. Intensive research efforts, ranging from device fabrication to performance evaluation, are required to surmount these limitations. In this paper, we demonstrate that the superior bipolar resistive switching characteristics of a CeO2:Gd-based memory device can be manipulated by means of UV radiation, serving as a new degree of freedom. Furthermore, the metal oxide-based (CeO2:Gd) memory device was found to possess electrical and neuromorphic multifunctionalities. To investigate the underlying switching mechanism of the device, its plasticity behaviour was studied by imposing weak programming conditions. In addition, a short-term to long-term memory transition analogous to the forgetting process in the human brain, which is regarded as a key biological synaptic function for information processing and data storage, was realized. Based on a careful examination of the device's retention behaviour at elevated temperatures, the filamentary nature of switching in such devices can be understood from a new perspective.

  20. All-Optical Ultrasound Transducers for High Resolution Imaging

    NASA Astrophysics Data System (ADS)

    Sheaff, Clay Smith

    High frequency ultrasound (HFUS) has increasingly been used within the past few decades to provide high resolution (< 200 mum) imaging in medical applications such as endoluminal imaging, intravascular imaging, ophthalmology, and dermatology. The optical detection and generation of HFUS using thin films offers numerous advantages over traditional piezoelectric technology. Circumvention of an electronic interface with the device head is one of the most significant given the RF noise, crosstalk, and reduced capacitance that encumbers small-scale electronic transducers. Thin film Fabry-Perot interferometers - also known as etalons - are well suited for HFUS receivers on account of their high sensitivity, wide bandwidth, and ease of fabrication. In addition, thin films can be used to generate HFUS when irradiated with optical pulses - a method referred to as Thermoelastic Ultrasound Generation (TUG). By integrating a polyimide (PI) film for TUG into an etalon receiver, we have created for the first time an all-optical ultrasound transducer that is both thermally stable and capable of forming fully sampled 2-D imaging arrays of arbitrary configuration. Here we report (1) the design and fabrication of PI-etalon transducers; (2) an evaluation of their optical and acoustic performance parameters; (3) the ability to conduct high-resolution imaging with synthetic 2-D arrays of PI-etalon elements; and (4) work towards a fiber optic PI-etalon for in vivo use. Successful development of a fiber optic imager would provide a unique field-of-view thereby exposing an abundance of prospects for minimally-invasive analysis, diagnosis, and treatment of disease.

  1. Cascadable all-optical inverter based on a nonlinear vertical-cavity semiconductor optical amplifier.

    PubMed

    Zhang, Haijiang; Wen, Pengyue; Esener, Sadik

    2007-07-01

    We report, for the first time to our knowledge, the operation of a cascadable, low-optical-switching-power(~10 microW) small-area (~100 microm(2)) high-speed (80 ps fall time) all-optical inverter. This inverter employs cross-gain modulation, polarization gain anisotropy, and highly nonlinear gain characteristics of an electrically pumped vertical-cavity semiconductor optical amplifier (VCSOA). The measured transfer characteristics of such an optical inverter resemble those of standard electronic metal-oxide semiconductor field-effect transistor-based inverters exhibiting high noise margin and high extinction ratio (~9.3 dB), making VCSOAs an ideal building block for all-optical logic and memory.

  2. 20Gbit/s all-optical logic OR in terahertz optical asymmetric demultiplexer (TOAD)

    NASA Astrophysics Data System (ADS)

    Yan, Yumei; Wu, Jian; Lin, Jintong

    2005-01-01

    A scheme for all-optical logic OR based on transparent teraherz optical asymmetric demultiplexer (transparent-TOAD) is proposed in this paper. In the transparent-TOAD, the SOA is biased at transparency and the gain recovery time determined by the intraband effect has the value of only a few picoseconds. Numerical analysis shows that the switching window of the transparent-TOAD is only about 0.54ps and the potential for ultrahigh speed all-optical logic processing is shown. Numerical demonstration is performed for 4-bit and 16-bit logic OR at 20Gbit/s. The results coincide with the OR truth table, showing high extinction ratio and no pattern dependency. Detailed analysis is carried out on the performance of the logic OR scheme.

  3. Dynamic switching mechanism of conduction/set process in Cu/a-Si/Si memristive device

    NASA Astrophysics Data System (ADS)

    Gao, Ligang; Lee, Shin Buhm; Hoskins, Brian; Yoo, Hyang Keun; Kang, Bo Soo

    2013-07-01

    The conduction/set processes of resistive switching have been systemically investigated for Cu/a-Si/Si electrochemical memristive devices. Experimental results indicate that the set process was driven by two different mechanisms, depending on the programming pulse amplitude: a purely electrical dielectric breakdown and a thermally assisted dielectric breakdown. For the latter process, we observe that the set time decreased exponentially with the increase in the programming pulse amplitude, whereas the former process shows amplitude independence. Through the temperature-dependent set transition characteristics, we argue that the filament growth in set process could be dominated by cation transport in the dielectric film. The thermal activation energy of Cu hopping in a-Si is extracted to be 0.16 eV.

  4. Graphene-based spin switch device via modulated Rashba field and strain

    NASA Astrophysics Data System (ADS)

    Diniz, G. S.; Vernek, E.; Souza, F. M.

    2017-01-01

    We investigate the spin-resolved transport in a two-terminal zigzag graphene nanoribbon device with two independent gate induced Rashba spin-orbit coupling regions and in the presence of strain. By employing a recursive Green's function technique to the tight-binding model for the graphene nanoribbon, we calculate the spin-resolved conductance of the system. We show that by switching the sign of one of the gates it is possible to select which spin component will be transmitted. Moreover, our results show that an uniaxial strain applied to the nanoribbon plays a significant role in the transport, providing and additional manner to control the spin-polarized conductance. This makes the present system a potential candidate for future implementations of spin-based mechanical strain sensors.

  5. Fiber Lasers and all Optical Logic Gates for Header Processing in High-Bit Optical Networks

    NASA Astrophysics Data System (ADS)

    Barnett, Brandon Craig

    As information technologies push network capacities toward higher bit rates, fiber-optic communication networks will eventually be capable of transmitting data at a rate at which electronic switches cannot respond. A solution to this problem is to replace the electronics at the front and back ends of the transmission system where data enters and exists in optical format with all-optical header processors. In this thesis, I will describe how the header processor has been divided into all-optical switching modules, which will act as the basic building block for the header processing unit. Each module arises from the integration of an erbium -doped fiber laser and an all-optical logic gate. The erbium-doped fiber laser (EDFL) acts as a local power supply for the module. It restores the pulse shape, pulse amplitude, and timing of an incoming optical bit stream. The development of a short-pulse EDFL and a high-power EDFL for this application is described. The high-power EDFL employs a unique cavity design that eliminates multiple pulses when pumped with high powers. Data processing is performed within the module by all-optical logic gates, which switch due to the nonlinear interaction of one pulse of light with another in optical fiber. Therefore, these gates can work at the bit rate of the transmission system and avoid the bottlenecks inherent in electronic processors. The design and demonstration of a low-latency soliton-dragging gate and a low-birefringent nonlinear optical loop mirror (low-bi NOLM) logic gate are described. The two logic gates are optimized for energy contrast, switching energy, timing sensitivity, and cascadability. Logic functionality is also demonstrated. The thesis culminates in an experiment that integrates the laser and logic gate work by driving two cascaded low -bi NOLM's with an EDFL. It is shown that this experiment utilizes all the components necessary to read the header of a high-bit-rate data packet, bringing closure to the switching

  6. Iii-V Compound Multiple Quantum Well Based Modulator and Switching Devices.

    NASA Astrophysics Data System (ADS)

    Hong, Songcheol

    A general formalism to study the absorption and photocurrent in multiple quantum well is provided with detailed consideration of quantum confined Stark shift, exciton binding energy, line broadening, tunneling, polarization, and strain effects. Results on variation of exciton size, binding energies and transition energies as a function electric field and well size have been presented. Inhomogeneous line broadening of exciton lines due to interface roughness, alloy disorder and well to well size fluctuation is calculated. The potential of material tailoring by introducing strain for specific optical response is discussed. Theoretical and experimental results on excitonic and band-to-band absorption spectra in strained multi-quantum well structures are shown. I also report on polarization dependent optical absorption for excitonic and interband transitions in lattice matched and strained multiquantum well structures in presence of transverse electric field. Photocurrent in a p-i(MQW)-n diode with monochromatic light is examined with respect to different temperatures and intensities. The negative resistance of I-V characteristic of the p-i-n diode is based on the quantum confined Stark effect of the heavy hole excitonic transition in a multiquantum well. This exciton based photocurrent characteristic allows efficient switching. A general purpose low power optical logic device using the controller-modulator concept bas been proposed and realized. The controller is a heterojunction phototransistor with multiquantum wells in the base-collector depletion region. This allows an amplified photocurrent controlled voltage feedback with low light intensity levels. Detailed analysis of the sensitivity of this device in various modes of operation is studied. Studies are also presented on the cascadability of the device as well as its integrating -thresholding properties. A multiquantum well heterojunction bipolar transistor (MHBT), which has N^+ -p^+-i(MQW)-N structure has been

  7. Optical switches and switching methods

    DOEpatents

    Doty, Michael

    2008-03-04

    A device and method for collecting subject responses, particularly during magnetic imaging experiments and testing using a method such as functional MRI. The device comprises a non-metallic input device which is coupled via fiber optic cables to a computer or other data collection device. One or more optical switches transmit the subject's responses. The input device keeps the subject's fingers comfortably aligned with the switches by partially immobilizing the forearm, wrist, and/or hand of the subject. Also a robust nonmetallic switch, particularly for use with the input device and methods for optical switching.

  8. Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis

    NASA Astrophysics Data System (ADS)

    Younis, Adnan; Chu, Dewei; Li, Sean

    2015-09-01

    Further progress in high-performance microelectronic devices relies on the development of novel materials and device architectures. However, the components and designs that are currently in use have reached their physical limits. Intensive research efforts, ranging from device fabrication to performance evaluation, are required to surmount these limitations. In this paper, we demonstrate that the superior bipolar resistive switching characteristics of a CeO2:Gd-based memory device can be manipulated by means of UV radiation, serving as a new degree of freedom. Furthermore, the metal oxide-based (CeO2:Gd) memory device was found to possess electrical and neuromorphic multifunctionalities. To investigate the underlying switching mechanism of the device, its plasticity behaviour was studied by imposing weak programming conditions. In addition, a short-term to long-term memory transition analogous to the forgetting process in the human brain, which is regarded as a key biological synaptic function for information processing and data storage, was realized. Based on a careful examination of the device’s retention behaviour at elevated temperatures, the filamentary nature of switching in such devices can be understood from a new perspective.

  9. Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis

    PubMed Central

    Younis, Adnan; Chu, Dewei; Li, Sean

    2015-01-01

    Further progress in high-performance microelectronic devices relies on the development of novel materials and device architectures. However, the components and designs that are currently in use have reached their physical limits. Intensive research efforts, ranging from device fabrication to performance evaluation, are required to surmount these limitations. In this paper, we demonstrate that the superior bipolar resistive switching characteristics of a CeO2:Gd-based memory device can be manipulated by means of UV radiation, serving as a new degree of freedom. Furthermore, the metal oxide-based (CeO2:Gd) memory device was found to possess electrical and neuromorphic multifunctionalities. To investigate the underlying switching mechanism of the device, its plasticity behaviour was studied by imposing weak programming conditions. In addition, a short-term to long-term memory transition analogous to the forgetting process in the human brain, which is regarded as a key biological synaptic function for information processing and data storage, was realized. Based on a careful examination of the device’s retention behaviour at elevated temperatures, the filamentary nature of switching in such devices can be understood from a new perspective. PMID:26324073

  10. Fabrication of Nano-Crossbar Resistive Switching Memory Based on the Copper-Tantalum Pentoxide-Platinum Device Structure

    NASA Astrophysics Data System (ADS)

    Olga Gneri, Paula; Jardim, Marcos

    Resistive switching memory has been of interest lately not only for its simple metal-insulator-metal (MIM) structure but also for its promising ease of scalability an integration into current CMOS technologies like the Field Programmable Gate Arrays and other non-volatile memory applications. There are several resistive switching MIM combinations but under this scope of research, attention will be paid to the bipolar resistive switching characteristics and fabrication of Tantalum Pentaoxide sandwiched between platinum and copper. By changing the polarity of the voltage bias, this metal-insulator-metal (MIM) device can be switched between a high resistive state (OFF) and low resistive state (ON). The change in states is induced by an electrochemical metallization process, which causes a formation or dissolution of Cu metal filamentary paths in the Tantalum Pentaoxide insulator. There is very little thorough experimental information about the Cu-Ta 2O5-Pt switching characteristics when scaled to nanometer dimensions. In this light, the MIM structure was fabricated in a two-dimensional crossbar format. Also, with the limited available resources, a multi-spacer technique was formulated to localize the active device area in this MIM configuration to less than 20nm. This step is important in understanding the switching characteristics and reliability of this structure when scaled to nanometer dimensions.

  11. All-optical signal processing technique for secure optical communication

    NASA Astrophysics Data System (ADS)

    Qian, Feng-chen; Su, Bing; Ye, Ya-lin; Zhang, Qian; Lin, Shao-feng; Duan, Tao; Duan, Jie

    2015-10-01

    Secure optical communication technologies are important means to solve the physical layer security for optical network. We present a scheme of secure optical communication system by all-optical signal processing technique. The scheme consists of three parts, as all-optical signal processing unit, optical key sequence generator, and synchronous control unit. In the paper, all-optical signal processing method is key technology using all-optical exclusive disjunction (XOR) gate based on optical cross-gain modulation effect, has advantages of wide dynamic range of input optical signal, simple structure and so on. All-optical XOR gate composed of two semiconductor optical amplifiers (SOA) is a symmetrical structure. By controlling injection current, input signal power, delay and filter bandwidth, the extinction ratio of XOR can be greater than 8dB. Finally, some performance parameters are calculated and the results are analyzed. The simulation and experimental results show that the proposed method can be achieved over 10Gbps optical signal encryption and decryption, which is simple, easy to implement, and error-free diffusion.

  12. All-optical binary logic unit (BLU) using frequency encoded data

    NASA Astrophysics Data System (ADS)

    Mandal, Dhoumendra; Garai, Sisir Kumar

    2015-03-01

    In frequency division multiplexing based communication network frequency encoded data is very important. In this communication, authors propose a new approach of developing an all-optical binary logic unit (BLU) by means of which sixteen different types of binary logic operations can be performed using frequency encoded data. The authors first develop all-optical NOT, AND, OR, XOR, etc. logic gates exploiting the polarization switching character of semiconductor optical amplifier which works based on the principle of nonlinear state of polarization rotation of the probe beam. Finally these logic gates are coupled by means of polarization switches, and activated to implement different logic operations as desired using control beams of different frequencies, after being proper routing the control beams by means of 16:1 MUX and 1:16 DMUX. Frequency conversion by polarization switching character of SOA is very efficient and faster with least optical power consumption, and therefore our proposed scheme of binary logic unit with frequency encoded data offers bit error free secure different binary logic operations with faster speed of processing. Simulation result reflects the feasibility of the proposed scheme.

  13. All-optical logic gates based on cross-phase modulation in an asymmetric coupler

    NASA Astrophysics Data System (ADS)

    Li, Qiliang; Yuan, Hongliang

    2014-05-01

    In this paper we propose an operation of an all-optical logical gate based on an asymmetric nonlinear directional coupler operating with the cross-phase modulation. Two-input OR and XOR gates and a new logical operation based on an asymmetric nonlinear directional coupler, which can be applied to transmission and processing of signals in all-optical systems, are examined. Initially, we evaluate the effect of the pump power on switching. We import a pulse into the nonlinear directional coupler, meanwhile adding a pump light via wavelength division multiplex in order to take advantage of Kerr effect and produce the cross-phase modulation. In this situation, we analyze two possible situations for the two-input logical gate, and draw a switching characteristic curve via Matlab. Finally, we define the truth table and it is clear that OR and XOR logic gates and a new logical operation can be realized by changing the pump power. Next the investigation also indicates that to change the input pulse's phase switching can be realized. In the same way, we define the truth table and it can be observed that different logic gates are realized.

  14. Design of an All-Optical Network Based on LCoS Technologies

    NASA Astrophysics Data System (ADS)

    Cheng, Yuh-Jiuh; Shiau, Yhi

    2016-06-01

    In this paper, an all-optical network composed of the ROADMs (reconfigurable optical add-drop multiplexer), L2/L3 optical packet switches, and the fiber optical cross-connection for fiber scheduling and measurement based on LCoS (liquid crystal on silicon) technologies is proposed. The L2/L3 optical packet switches are designed with optical output buffers. Only the header of optical packets is converted to electronic signals to control the wavelength of input ports and the packet payloads can be transparently destined to their output ports. An optical output buffer is designed to queue the packets when more than one incoming packet should reach to the same destination output port. For preserving service-packet sequencing and fairness of routing sequence, a priority scheme and a round-robin algorithm are adopted at the optical output buffer. The wavelength of input ports is designed for routing incoming packets using LCoS technologies. Finally, the proposed OFS (optical flow switch) with input buffers can quickly transfer the big data to the output ports and the main purpose of the OFS is to reduce the number of wavelength reflections. The all-optical content delivery network is comprised of the OFSs for a large amount of audio and video data transmissions in the future.

  15. All-optical logic circuits based on the polarization properties of non-degenerate four-wave mixing

    NASA Astrophysics Data System (ADS)

    Bhardwaj, Ashish Ishwar Singh

    2001-10-01

    This thesis investigates a new class of all-optical logic circuits that are based on the polarization properties of non-degenerate Four-Wave Mixing. Such circuits would be used in conjunction with a data modulation format where the information is coded on the states of polarization of the electric field. Schemes to perform multiple triple- product logic functions are discussed and it is shown that higher-level Boolean operations involving several bits can be implemented without resorting to the standard 2-input gates that are based on some form of switching. Instead, an entire hierarchy of more complex Boolean functions can be derived based on the selection rules of multi-photon scattering processes that can form a new classes of primitive building blocks for digital circuits. Possible applications of these circuits could involve some front-end signal processing to be performed all- optically in shared computer back-planes. As a simple illustration of this idea, a circuit performing error correction on a (3,1) Hamming Code is demonstrated. Error-free performance (Bit Error Rate of <10-9) at 2.5 Gbit/s is achieved after single-error correction on the Hamming word with 50 percent errors. The bit-rate is only limited by the bandwidth of available resources. Since Four-Wave Mixing is an ultrafast nonlinearity, these circuits offer the potential of computing at several terabits per second. Furthermore, it is shown that several Boolean functions can be performed in parallel in the same set of devices using different multi-photon scattering processes. The main objective of this thesis is to motivate a new paradigm of thought in digital circuit design. Challenges pertaining to the feasibility of these ideas are discussed.

  16. Self-learning ability realized with a resistive switching device based on a Ni-rich nickel oxide thin film

    NASA Astrophysics Data System (ADS)

    Liu, Y.; Chen, T. P.; Liu, Z.; Yu, Y. F.; Yu, Q.; Li, P.; Fung, S.

    2011-12-01

    The resistive switching device based on a Ni-rich nickel oxide thin film exhibits an inherent learning ability of a neural network. The device has the short-term-memory and long-term-memory functions analogous to those of the human brain, depending on the history of its experience of voltage pulsing or sweeping. Neuroplasticity could be realized with the device, as the device can be switched from a high-resistance state to a low-resistance state due to the formation of stable filaments by a series of electrical pulses, resembling the changes such as the growth of new connections and the creation of new neurons in the brain in response to experience.

  17. Schottky barrier height switching in thin metal oxide films studied in diode and solar cell device configurations

    NASA Astrophysics Data System (ADS)

    Wing, Dahvyd; Rothschild, Avner; Tessler, Nir

    2015-08-01

    We investigate changes in the properties of 8 nm thin metal oxide (Nb-doped SrTiO3) films in response to relatively high voltage or light soaking under three Sun excitation. We measure the current-voltage behavior of metal|insulator|metal type diodes and use a device model to relate changes in device behavior to the metal oxide film properties. We find that the device's resistive switching is mainly associated with shifts (switching) of the metal oxide work function between high and low injection barrier states. The method presented here can be used for in situ monitoring of the contact work function and for quantifying the uniformity of this value across the device. We also discuss the effect of non-uniform work function on the apparent diode's ideality factor.

  18. Simple novel all-optical half-adder

    NASA Astrophysics Data System (ADS)

    Chen, Zhixin

    2010-04-01

    On the basis of Sagnac interferometric structure, a simple novel ultrafast scheme of all-optical half-adder is proposed. The structure comprises two of the same balanced terahertz optical asymmetric demultiplexers (TOADs). One TOAD is utilized to achieve an all-optical XOR gate, which is logic SUM. The other is utilized to obtain an all-optical AND gate, which is logic CARRY. Logical SUM and CARRY are simultaneously realized at 80 Gbit/s. Through numerical analysis, the operating characteristics of the scheme are illustrated at 80 Gbit/s. Furthermore, the carrier recovery time of the semiconductor optical amplifier is no longer a crucial parameter to restrict the operation speed of this scheme.

  19. Electro-Thermal Model of Threshold Switching in TaOx-Based Devices.

    PubMed

    Goodwill, Jonathan M; Sharma, Abhishek A; Li, Dasheng; Bain, James A; Skowronski, Marek

    2017-04-05

    Pulsed and quasi-static current-voltage (I-V) characteristics of threshold switching in TiN/TaOx/TiN crossbar devices were measured as a function of stage temperature (200-495 K) and oxygen flow during the deposition of TaOx. A comparison of the pulsed and quasi-static characteristics in the high resistance part of the I-V revealed that Joule self-heating significantly affected the current and was a likely source of negative differential resistance (NDR) and thermal runaway. The experimental quasi-static I-V's were simulated using a finite element electro-thermal model that coupled current and heat flow and incorporated an external circuit with an appropriate load resistor. The simulation reproduced the experimental I-V including the OFF-state at low currents and the volatile NDR region. In the NDR region, the simulation predicted spontaneous current constriction forming a small-diameter hot conducting filament with a radius of 250 nm in a 6 μm diameter device.

  20. The Development and Study of Molecular Electronic Switches and their Field-Effect Transistor (FET) Device Properties

    DTIC Science & Technology

    2015-02-27

    fabrication of nanostructures can serve as building blocks for molecular switching devices, organic light - emitting diodes (OLEDs), photovoltaic, field...a class of highly thermostable n-type semiconductors and have been used as building blocks for organic light - emitting diodes , light - harvesting...electrochromatic materials, light - emitting diodes (LEDs), and photovoltaic and solar cells applications. This project will secure funding to establish

  1. All-optical pseudorandom bit sequences generator based on TOADs

    NASA Astrophysics Data System (ADS)

    Sun, Zhenchao; Wang, Zhi; Wu, Chongqing; Wang, Fu; Li, Qiang

    2016-03-01

    A scheme for all-optical pseudorandom bit sequences (PRBS) generator is demonstrated with optical logic gate 'XNOR' and all-optical wavelength converter based on cascaded Tera-Hertz Optical Asymmetric Demultiplexer (TOADs). Its feasibility is verified by generation of return-to-zero on-off keying (RZ-OOK) 263-1 PRBS at the speed of 1 Gb/s with 10% duty radio. The high randomness of ultra-long cycle PRBS is validated by successfully passing the standard benchmark test.

  2. Multipath-switching device utilizing a GaAs-based multiterminal nanowire junction with size-controlled dual Schottky wrap gates

    NASA Astrophysics Data System (ADS)

    Kasai, Seiya; Nakamura, Tatsuya; Shiratori, Yuta

    2007-05-01

    A multipath-switching device using a multiterminal nanowire junction with size-controlled dual gates is proposed and demonstrated experimentally. The device switches a number of output terminals according to multiple-valued input voltages for electrons entering from a root terminal. The switching function is implemented by dual gating on multiple nanowires with different threshold voltages Vth. Systematic Vth shift is made by changing gate lengths in nanometer scale. A triple-path-switching device is fabricated using AlGaAs /GaAs etched nanowires and nanometer-scale Schottky wrap gates. Its correct operation is confirmed at room temperature. Obtained results are explained by a simple analytical model.

  3. Spectrally-efficient all-optical OFDM by WSS and AWG.

    PubMed

    Hoxha, J; Morosi, J; Shimizu, S; Martelli, P; Boffi, P; Wada, N; Cincotti, G

    2015-05-04

    We report on the transmission experiment of seven 12.5-GHz spaced all optical-orthogonal frequency division multiplexed (AO-OFDM) subcarriers over a 35-km fiber link, using differential quadrature phase shift keying (DQPSK) modulation and direct detection. The system does not require chromatic dispersion compensation, optical time gating at the receiver (RX) or cyclic prefix (CP), achieving the maximum spectral efficiency. We use a wavelength selective switch (WSS) at the transmitter (TX) to allow subcarrier assignment flexibility and optimal filter shaping; an arrayed waveguide grating (AWG) AO-OFDM demultiplexer is used at the RX, to reduce the system cost and complexity.

  4. Comparison between Pt/TiO2/Pt and Pt/TaO X /TaO Y /Pt based bipolar resistive switching devices

    NASA Astrophysics Data System (ADS)

    Ho, Patrick W. C.; Odai Hatem, Firas; Almurib, Haider Abbas F.; Nandha Kumar, T.

    2016-06-01

    Nonvolatile memories have emerged in recent years and have become a leading candidate towards replacing dynamic and static random-access memory devices. In this article, the performances of TiO2 and TaO2 nonvolatile memristive devices were compared and the factors that make TaO2 memristive devices better than TiO2 memristive devices were studied. TaO2 memristive devices have shown better endurance performances (108 times more switching cycles) and faster switching speed (5 times) than TiO2 memristive devices. Electroforming of TaO2 memristive devices requires ∼4.5 times less energy than TiO2 memristive devices of a similar size. The retention period of TaO2 memristive devices is expected to exceed 10 years with sufficient experimental evidence. In addition to comparing device performances, this article also explains the differences in physical device structure, switching mechanism, and resistance switching performances of TiO2 and TaO2 memristive devices. This article summarizes the reasons that give TaO2 memristive devices the advantage over TiO2 memristive devices, in terms of electroformation, switching speed, and endurance.

  5. Analysis of all-optically tunable functionalities in subwavelength periodic structures by the Fourier modal method

    NASA Astrophysics Data System (ADS)

    Bej, Subhajit; Tervo, Jani; Francés, Jorge; Svirko, Yuri P.; Turunen, Jari

    2016-05-01

    We propose the nonlinear Fourier Modal Method (FMM) [J. Opt. Soc. Am. B 31, 2371 (2014)] as a convenient and versatile numerical tool for the design and analysis of grating based next generation all-optical devices. Here, we include several numerical examples where the FMM is used to simulate all-optically tunable functionalities in sub-wavelength periodic structures. At first, we numerically investigate a 1-D periodic nonlinear binary grating with amorphous TiO2. We plot the diffraction efficiency in the transmitted orders against the structure depth for normally incident plane wave. Change in diffraction efficiencies for different incident field amplitudes are evident from the plots. We verify the accuracy of our implementation by comparing our results with the results obtained with the nonlinear Split Field-Finite Difference Time Domain (SF-FDTD) method. Next we repeat the same experiment with vertically standing amorphous Titanium dioxide (TiO2) nanowire arrays grown on top of quartz which are periodic in two mutually perpendicular directions and examine the efficiencies in the direct transmitted light for different incident field amplitudes. Our third example includes analysis of a form birefringent linear grating with Kerr medium. With FMM we demonstrate that the birefringence of such a structure can be tuned by all-optical means. As a final example, we design a narrow band Guided Mode Resonance Filter (GMRF). Numerical experiments based on the nonlinear FMM reveal that the spectral tunability of such a filter can be obtained by all-optical means.

  6. All-optical digital processor based on harmonic generation phenomena

    NASA Astrophysics Data System (ADS)

    Shcherbakov, Alexandre S.; Rakovsky, Vsevolod Y.

    1990-07-01

    Digital optical processors are designed to combine ultra- parallel data procesing capabilities of optical aystems cnd high accur&cy of performed computations. The ultimate limit of the processing rate can be anticipated from all-optical parcllel erchitecturea based on networks o logic gates using materials exibiting strong electronic nonlinearities with response times less than 1O seconds1.

  7. All-optical Landau-Zener tunneling in waveguide arrays.

    PubMed

    Fratalocchi, Andrea; Assanto, Gaetano

    2006-03-06

    We investigate Landau-Zener all-optical tunneling in a voltage-controlled waveguide array realized in undoped nematic liquid crystals. From the material governing equations we derive the original Zener model and demonstrate a novel approach to Floquet-band tunneling.

  8. Photo-Thermally Induced Current Switching in Vanadium-Dioxide-Based Devices Using CO2 Laser Pumping.

    PubMed

    Kim, Jihoon; Jo, Songhyun; Park, Kyongsoo; Kim, Bong-Jun; Lee, Yong Wook

    2015-11-01

    By utilizing a CO2 laser as an illumination light source for triggering, we demonstrated bidirectional laser triggering in a two-terminal planar device based on a highly resistive vanadium dioxide (VO2) thin film. Bidirectional laser triggering between 0 and 10 mA was realized by switching the CO2 laser whose focused beam illuminated the VO2 film, and transient responses of laser-triggered devices were investigated when periodical laser pulses excited the VO2-based device at a variety of pulse widths and repetition rates. A switching contrast between off- and on-state currents was evaluated as -3333, and the rising and falling times were measured as -39 and -21 ms in the transient responses obtained by using periodic laser pulses with a pulse width of 100 ms, respectively.

  9. Controllable switching ratio in quantum dot/metal-metal oxide nanostructure based non-volatile memory device

    NASA Astrophysics Data System (ADS)

    Kannan, V.; Rhee, J. K.

    2012-07-01

    In this paper, we report a facile quantum dot/In-InOx(nanostructure)/quantum dot/In based non-volatile resistive memory device. The solution processed tri-layer structure exhibited bipolar resistive switching with a ratio of 100 between the high-resistance state and low-resistance state. The memory device was stable and functional even after 100,000 cycles of operation and it exhibited good retention characteristics. The ON/OFF switching ratio could be controlled by choosing appropriate metal in the structure. Memory operating mechanism is discussed based on charge trapping in quantum dots with InOx acting as barrier. A comparative study of memory devices consisting of aluminum and titanium in place of indium is presented. The possible reason for the variation in ON/OFF ratio is discussed on the size of the nano-sized grains of the middle metal layer.

  10. Threshold switching behavior of Ag-Si based selector device and hydrogen doping effect on its characteristics

    SciTech Connect

    Yoo, Jongmyung; Woo, Jiyong; Song, Jeonghwan; Hwang, Hyunsang

    2015-12-15

    The effect of hydrogen treatment on the threshold switching property in a Ag/amorphous Si based programmable metallization cells was investigated for selector device applications. Using the Ag filament formed during motion of Ag ions, a steep-slope (5 mV/dec.) for threshold switching with higher selectivity (∼10{sup 5}) could be achieved. Because of the faster diffusivity of Ag atoms, which are inside solid-electrolytes, the resulting Ag filament could easily be dissolved under low current regime, where the Ag filament possesses weak stability. We found that the dissolution process could be further enhanced by hydrogen treatment that facilitated the movement of the Ag atoms.

  11. A linear 180 nm SOI CMOS antenna switch module using integrated passive device filters for cellular applications

    NASA Astrophysics Data System (ADS)

    Jie, Cui; Lei, Chen; Peng, Zhao; Xu, Niu; Yi, Liu

    2014-06-01

    A broadband monolithic linear single pole, eight throw (SP8T) switch has been fabricated in 180 nm thin film silicon-on-insulator (SOI) CMOS technology with a quad-band GSM harmonic filter in integrated passive devices (IPD) technology, which is developed for cellular applications. The antenna switch module (ASM) features 1.2 dB insertion loss with filter on 2G bands and 0.4 dB insertion loss in 3G bands, less than -45 dB isolation and maximum -103 dB intermodulation distortion for mobile front ends by applying distributed architecture and adaptive supply voltage generator.

  12. All optical space-to-time mapping using modal dispersion of multimode fiber

    NASA Astrophysics Data System (ADS)

    Tan, Zhongwei; Sun, Jian; Li, Ying; Ren, Wenhua; Li, Tangjun

    2017-04-01

    We experimentally demonstrate an all optical space-to-time mapping process using modal dispersion of large core high numerical aperture step-index multimode fiber in this paper. We use light beam with different input angle to excite various modes in a span of multimode fiber. The input optical pulses are stretched in time by modal dispersion and received by a large area, high speed photodiode. Through this process, the spatial information is directly mapped into device's temporal response. It has high speed, broad bandwidth and low system latency. Comparing with the widely used spectral imaging technology, this device is weak dependent of the input signal wavelength and optical carrier bandwidth.

  13. KOMEKAMI Switch: A Wearable Input Device Based on the Concept of Affordance

    NASA Astrophysics Data System (ADS)

    Taniguchi, Kazuhiro; Nishikawa, Atsushi; Miyazaki, Fumio

    A wearable computing system plays a leading role in the ubiquitous computing era, in which computers are used at any place and at any time. Now the mobile multimedia communication technology based devices, such as mobile phone, handy-type PC, etc., have come to be used in such a broad range of areas, the features of wearable hands-free computing system, which people can constantly use in their daily life or workplace while doing some other job, are highly valued more than ever. However, the wearable computing system has not yet spread so widely owing to various factors. Among such factors is the delay in the development of human machine interface, which is applicable to the wearable computing system. We developed a blink based human-machine interface for the wearable computing system, called KOMEKAMI Switch. This interface makes it easy to manipulate machine with intentional movements of temple. User can constantly use machine with no interference, as well as with hands free. It is compact and lightweight, permitting ease of manufacturing at a low cost. It does not react to daily actions like conversation, diet, etc., other than movements intended to control the machine.

  14. Modulation of nonlinear resistive switching behavior of a TaOx-based resistive device through interface engineering

    NASA Astrophysics Data System (ADS)

    Wang, Zongwei; Kang, Jian; Yu, Zhizhen; Fang, Yichen; Ling, Yaotian; Cai, Yimao; Huang, Ru; Wang, Yangyuan

    2017-02-01

    A resistive switching device with inherent nonlinear characteristics through a delicately engineered interfacial layer is an ideal component to be integrated into passive crossbar arrays for the suppression of sneaking current, especially in ultra-dense 3D integration. In this paper, we demonstrated a TaOx-based bipolar resistive switching device with a nearly symmetrical bi-directional nonlinear feature through interface engineering. This was accomplished by introducing an ultra-thin interfacial layer (SiO2-x) with unique features, including a large band gap and a certain level of negative heat of oxide formation between the top electrode (TiN) and resistive layer (TaOx). The devices exhibit excellent nonlinear property under both positive and negative bias. Modulation of the inherent nonlinearity as well as the resistive switching mechanism are comprehensively studied by scrutinizing the results of the experimental control groups and the extensive characterizations including detailed compositional analysis, which suggests that the underlying mechanism of the nonlinear behavior is associatively governed by the serially connected metallic conductive filament and Flower-Nordheim tunneling barrier formed by the SiO2-x interface layer. The proposed device in this work has great potential to be implemented in future massive storage memory applications of high-density selector-free crossbar structure.

  15. Verification of redox-processes as switching and retention failure mechanisms in Nb:SrTiO3/metal devices.

    PubMed

    Baeumer, C; Raab, N; Menke, T; Schmitz, C; Rosezin, R; Müller, P; Andrä, M; Feyer, V; Bruchhaus, R; Gunkel, F; Schneider, C M; Waser, R; Dittmann, R

    2016-08-07

    Nanoscale redox reactions in transition metal oxides are believed to be the physical foundation of memristive devices, which present a highly scalable, low-power alternative for future non-volatile memory devices. The interface between noble metal top electrodes and Nb-doped SrTiO3 single crystals may serve as a prominent but not yet well-understood example of such memristive devices. In this report, we will present experimental evidence that nanoscale redox reactions and the associated valence change mechanism are indeed responsible for the resistance change in noble metal/Nb-doped SrTiO3 junctions with dimensions ranging from the micrometer scale down to the nanometer regime. Direct verification of the valence change mechanism is given by spectromicroscopic characterization of switching filaments. Furthermore, it is found that the resistance change over time is driven by the reoxidation of a previously oxygen-deficient region. The retention times of the low resistance states, accordingly, can be dramatically improved under vacuum conditions as well as through the insertion of a thin Al2O3 layer which prevents this reoxidation. These insights finally confirm the resistive switching mechanism at these interfaces and are therefore of significant importance for the study and application of memristive devices based on Nb-doped SrTiO3 as well as systems with similar switching mechanisms.

  16. Chip-integrated ultrawide-band all-optical logic comparator in plasmonic circuits

    PubMed Central

    Lu, Cuicui; Hu, Xiaoyong; Yang, Hong; Gong, Qihuang

    2014-01-01

    Optical computing opens up the possibility for the realization of ultrahigh-speed and ultrawide-band information processing. Integrated all-optical logic comparator is one of the indispensable core components of optical computing systems. Unfortunately, up to now, no any nanoscale all-optical logic comparator suitable for on-chip integration applications has been realized experimentally. Here, we report a subtle and effective technical solution to circumvent the obstacles of inherent Ohmic losses of metal and limited propagation length of SPPs. A nanoscale all-optical logic comparator suitable for on-chip integration applications is realized in plasmonic circuits directly. The incident single-bit (or dual-bit) logic signals can be compared and the comparison results are endowed with different logic encodings. An ultrabroad operating wavelength range from 700 to 1000 nm, and an ultrahigh output logic-state contrast-ratio of more than 25 dB are realized experimentally. No high power requirement is needed. Though nanoscale SPP light source and the logic comparator device are integrated into the same plasmonic chip, an ultrasmall feature size is maintained. This work not only paves a way for the realization of complex logic device such as adders and multiplier, but also opens up the possibility for realizing quantum solid chips based on plasmonic circuits. PMID:24463956

  17. Chip-integrated ultrawide-band all-optical logic comparator in plasmonic circuits

    NASA Astrophysics Data System (ADS)

    Lu, Cuicui; Hu, Xiaoyong; Yang, Hong; Gong, Qihuang

    2014-01-01

    Optical computing opens up the possibility for the realization of ultrahigh-speed and ultrawide-band information processing. Integrated all-optical logic comparator is one of the indispensable core components of optical computing systems. Unfortunately, up to now, no any nanoscale all-optical logic comparator suitable for on-chip integration applications has been realized experimentally. Here, we report a subtle and effective technical solution to circumvent the obstacles of inherent Ohmic losses of metal and limited propagation length of SPPs. A nanoscale all-optical logic comparator suitable for on-chip integration applications is realized in plasmonic circuits directly. The incident single-bit (or dual-bit) logic signals can be compared and the comparison results are endowed with different logic encodings. An ultrabroad operating wavelength range from 700 to 1000 nm, and an ultrahigh output logic-state contrast-ratio of more than 25 dB are realized experimentally. No high power requirement is needed. Though nanoscale SPP light source and the logic comparator device are integrated into the same plasmonic chip, an ultrasmall feature size is maintained. This work not only paves a way for the realization of complex logic device such as adders and multiplier, but also opens up the possibility for realizing quantum solid chips based on plasmonic circuits.

  18. Chip-integrated ultrawide-band all-optical logic comparator in plasmonic circuits.

    PubMed

    Lu, Cuicui; Hu, Xiaoyong; Yang, Hong; Gong, Qihuang

    2014-01-27

    Optical computing opens up the possibility for the realization of ultrahigh-speed and ultrawide-band information processing. Integrated all-optical logic comparator is one of the indispensable core components of optical computing systems. Unfortunately, up to now, no any nanoscale all-optical logic comparator suitable for on-chip integration applications has been realized experimentally. Here, we report a subtle and effective technical solution to circumvent the obstacles of inherent Ohmic losses of metal and limited propagation length of SPPs. A nanoscale all-optical logic comparator suitable for on-chip integration applications is realized in plasmonic circuits directly. The incident single-bit (or dual-bit) logic signals can be compared and the comparison results are endowed with different logic encodings. An ultrabroad operating wavelength range from 700 to 1000 nm, and an ultrahigh output logic-state contrast-ratio of more than 25 dB are realized experimentally. No high power requirement is needed. Though nanoscale SPP light source and the logic comparator device are integrated into the same plasmonic chip, an ultrasmall feature size is maintained. This work not only paves a way for the realization of complex logic device such as adders and multiplier, but also opens up the possibility for realizing quantum solid chips based on plasmonic circuits.

  19. A light-modified ferroelectric resistive switching behavior in Ag/BaMoO{sub 4}/FTO device at ambient temperature

    SciTech Connect

    Zhao, W.X.; Sun, B.; Liu, Y.H.; Wei, L.J.; Li, H.W.; Chen, P.

    2014-12-15

    BaMoO{sub 4} powder was prepared by a facile hydrothermal synthesis. And the BaMoO{sub 4}/FTO device was fabricated by a spin-coated method, in which the thickness of BaMoO{sub 4} layer is about 20 µm. The bipolar resistive switching effect has been observed in Ag/BaMoO{sub 4}/FTO device. Moreover, the resistive switching effect of the device is greatly improved by white light irradiation. The resistive switching behavior is explained by the polarization reversal that changes the charge distribution and modulates the Schottky barriers. - Graphical abstract: We fabricate a resistive switching device based on Ag/BaMoO{sub 4}/FTO, the device shows superior white-light controlled bipolar resistive switching memristive characteristics. - Highlights: • The BaMoO{sub 4} nanosquares powder was prepared by a hydrothermal synthesis. • The resistive switching of the Ag/BaMoO{sub 4}/FTO device was observed for the first time. • It is shown that the resistive switching is greatly improved under the white light irradiation. • The mechanism of resistive switching is attributed to the ferroelectric polarization reversal.

  20. Design and demonstration of a switching engine for a binary true-time-delay device that uses a white cell.

    PubMed

    Higgins, Richard; Nahar, Niru K; Anderson, Betty Lise

    2003-08-10

    Optical true-time-delay devices based on the White cell can be divided into two general types: polynomial cells, in which the number of delays that can be obtained is related to the number of times m that a beam bounces in the cell raised to some power, and exponential cells, in which the number of delays is proportional to some number raised to the power of m. In exponential cells, the topic to be addressed, the spatial light modulator switches between a delay element and a null path on each bounce. We describe an improved design of this switching engine, which contains a liquid-crystal switch and a White cell. We examine astigmatism and corrections for it and present a specific design.

  1. All-optical phase modulation for integrated interferometric biosensors.

    PubMed

    Dante, Stefania; Duval, Daphné; Sepúlveda, Borja; González-Guerrero, Ana Belen; Sendra, José Ramón; Lechuga, Laura M

    2012-03-26

    We present the theoretical and the experimental implementation of an all-optical phase modulation system in integrated Mach-Zehnder Interferometers to solve the drawbacks related to the periodic nature of the interferometric signal. Sensor phase is tuned by modulating the emission wavelength of low-cost commercial laser diodes by changing their output power. FFT deconvolution of the signal allows for direct phase readout, immune to sensitivity variations and to light intensity fluctuations. This simple phase modulation scheme increases the signal-to-noise ratio of the measurements in one order of magnitude, rendering in a sensor with a detection limit of 1.9·10⁻⁷ RIU. The viability of the all-optical modulation approach is demonstrated with an immunoassay detection as a biosensing proof of concept.

  2. All-Optical Fibre Networks For Coal Mines

    NASA Astrophysics Data System (ADS)

    Zientkiewicz, Jacek K.

    1987-09-01

    A topic of the paper is fiber-optic integrated network (FOIN) suited to the most hostile environments existing in coal mines. The use of optical fibres for transmission of mine instrumentation data offers the prospects of improved safety and immunity to electromagnetic interference (EMI). The feasibility of optically powered sensors has opened up new opportunities for research into optical signal processing architectures. This article discusses a new fibre-optic sensor network involving a time domain multiplexing(TDM)scheme and optical signal processing techniques. The pros and cons of different FOIN topologies with respect to coal mine applications are considered. The emphasis has been placed on a recently developed all-optical fibre network using spread spectrum code division multiple access (COMA) techniques. The all-optical networks have applications in explosive environments where electrical isolation is required.

  3. Bufferless Ultra-High Speed All-Optical Packet Routing

    NASA Astrophysics Data System (ADS)

    Muttagi, Shrihari; Prince, Shanthi

    2011-10-01

    All-Optical network is still in adolescence to cope up with steep rise in data traffic at the backbone network. Routing of packets in optical network depends on the processing speed of the All-Optical routers, thus there is a need to enhance optical processing to curb the delay in packet forwarding unit. In the proposed scheme, the header processing takes place on fly, therefore processing delay is at its lower limit. The objective is to propose a framework which establishes high data rate transmission with least latency in data routing from source to destination. The Routing table and optical header pulses are converted into Pulse Position (PP) format, thus reducing the complexity and in turn the processing delay. Optical pulse matching is exercised which results in multi-output transmission. This results in ultra-high speed packet forwarding unit. In addition, this proposed scheme includes dispersion compensation unit, which makes the data reliable.

  4. Time-domain analysis of spin-torque induced switching paths in nanoscale CoFeB/MgO/CoFeB magnetic tunnel junction devices

    SciTech Connect

    Heindl, R.; Rippard, W. H.; Russek, S. E.; Pufall, M. R.

    2014-12-28

    We performed thousands of single-shot, real-time measurements of spin-transfer-torque induced switching in nanoscale CoFeB/MgO/CoFeB magnetic tunnel junctions having in-plane magnetizations. Our investigation discovered a variety of switching paths occurring in consecutive, nominally identical switching trials of a single device. By mapping the voltage as a function of time to an effective magnetization angle, we determined that reversal of a single device occurs via a variety of thermally activated paths. Our results show a complex switching behavior that has not been captured by previous observations and cannot be fully explained within the simple macrospin model.

  5. Investigation of group delay ripple distorted signals transmitted through all-optical 2R regenerators.

    PubMed

    Mok, Joe; Blows, Justin; Eggleton, Benjamin

    2004-09-20

    We investigate the use of all-optical regenerators to correct pulse distortions introduced by group delay ripple. Group delay ripple creates unwanted satellite pulses and intensity fluctuations. By placing an all-optical regenerator after a device that introduces group delay ripple, we show that the signal distortions can be effectively reduced. This has the benefit of opening the signal eye at the receiver. The performances of both self-phase modulation and four-wave mixing based regenerators in reducing ripple induced system penalties are examined. We find that the regenerator based on four-wave mixing achieves better suppression of group delay ripple distortions than the self-phase modulation based alternative. The eye closure penalty introduced by group delay ripple is reduced by the four-wave mixing based regenerator by 1dB.

  6. Ultralow-light-level all-optical transistor in rubidium vapor

    SciTech Connect

    Jing, Jietai Zhou, Zhifan; Liu, Cunjin; Qin, Zhongzhong; Fang, Yami; Zhou, Jun; Zhang, Weiping

    2014-04-14

    An all-optical transistor (AOT) is a device in which one light beam can efficiently manipulate another. It is the foundational component of an all-optical communication network. An AOT that can operate at ultralow light levels is especially attractive for its potential application in the quantum information field. Here, we demonstrate an AOT driven by a weak light beam with an energy density of 2.5 × 10{sup −5} photons/(λ{sup 2}/2π) (corresponding to 6  yJ/(λ{sup 2}/2π) and about 800 total photons) using the double-Λ four-wave mixing process in hot rubidium vapor. This makes it a promising candidate for ultralow-light-level optical communication and quantum information science.

  7. Cascaded transformerless DC-DC voltage amplifier with optically isolated switching devices

    NASA Technical Reports Server (NTRS)

    Sridharan, Govind (Inventor)

    1993-01-01

    A very high voltage amplifier is provided in which plural cascaded banks of capacitors are switched by optically isolated control switches so as to be charged in parallel from the preceding stage or capacitor bank and to discharge in series to the succeeding stage or capacitor bank in alternating control cycles. The optically isolated control switches are controlled by a logic controller whose power supply is virtually immune to interference from the very high voltage output of the amplifier by the optical isolation provided by the switches, so that a very high voltage amplification ratio may be attained using many capacitor banks in cascade.

  8. Maintaining Control of Chronic Obstructive Airway Disease: Adherence to Inhaled Therapy and Risks and Benefits of Switching Devices.

    PubMed

    Melani, Andrea S; Paleari, Davide

    2016-01-01

    Asthma and chronic obstructive pulmonary disease (COPD) are major obstructive airway diseases that involve underlying airway inflammation. The most widely used pharmacotherapies for asthma and COPD are inhaled agents that have been shown to be effective and safe in these patients. However, despite the availability of effective pharmacologic treatment and comprehensive treatment guidelines, the prevalence of inadequately controlled asthma and COPD is high. A main reason for this is poor adherence. Adherence is a big problem for all chronic diseases, but in asthma and COPD patients there are some additional difficulties because of poor inhalation technique and inhaler choice. Easier-to-use devices and educational strategies on proper inhaler use from health caregivers can improve inhaler technique. The type of device used and the concordance between patient and physician in the choice of inhaler can also improve adherence and are as important as the drug. Adherence to inhaled therapy is absolutely necessary for optimizing patient control. If disease control is not adequate despite good adherence, switching to a more appropriate inhaled therapy is recommended. By contrast, uninformed switching or switching to less user-friendly inhaler may impact disease control negatively. This critical review of the available literature is aimed to provide a guidance protocol on when a switch may be recommended in individual patients.

  9. High gain GaAs Photoconductive Semiconductor Switches (PCSS): Device lifetime, high current testing, optical pulse generators

    SciTech Connect

    Zutavern, F.J.; Loubriel, G.M.; Helgeson, W.D.; O`Malley, M.W.; Gallegos, R.R.; Hjalmarson, H.P.; Baca, A.G.; Plut, T.A.

    1995-12-31

    This paper presents results from three areas of GaAs PCSS research and development: device lifetime, high current switching, and PCSS-driven laser diode arrays (LDA). The authors have performed device lifetime tests on both lateral and vertical switches as a function of current amplitude, pulse width, and charging time. At present, their longest-lived switch reached 4 {times} 10{sup 6} pulses. Scanning electron microscope (SEM) images show damage near the contacts even after only 5 pulses. They are presently searching for the threshold at which no damage is evident after a single shot. In high current tests, they have reached 5.2 kA at 4.2 kV. This was achieved using twenty fiber-optic coupled lasers to distribute current filaments over a 5 mm wide PCSS. Current waveforms and images of the current filaments as a function of current amplitude will be presented. The lasers used to trigger the high current PCSS were driven with a miniature PCSS. Low inductance, high speed GaAs PCSS are very effective as short pulse laser diode array drivers. Some types of arrays gain switch, producing a compressed optical pulse which is only 75 ps wide. Results from tests with a variety of laser diode arrays will be presented.

  10. High optical and switching performance electrochromic devices based on a zinc oxide nanowire with poly(methyl methacrylate) gel electrolytes

    SciTech Connect

    Chun, Young Tea; Chu, Daping; Neeves, Matthew; Placido, Frank; Smithwick, Quinn

    2014-11-10

    High performance electrochromic devices have been fabricated and demonstrated utilizing a solid polymer electrolyte and zinc oxide (ZnO) nanowire (NW) array counter electrode. The poly(methyl methacrylate) based polymer electrolyte was spin coated upon hydrothermally grown ZnO NW array counter electrodes, while electron beam evaporated NiO{sub x} thin films formed the working electrodes. Excellent optical contrast and switching speeds were observed in the fabricated devices with active areas of 2 cm{sup 2}, exhibiting an optical contrast of 73.11% at the wavelength of 470 nm, combined with a fast switching time of 0.2 s and 0.4 s for bleaching and coloration, respectively.

  11. Processing of Diamond for Integrated Optic Devices Using Q-Switched Nd:YAG Laser at Different Wavelengths

    NASA Astrophysics Data System (ADS)

    Sudheer, S. K.; Pillai, V. P. Mahadevan; Nayar, V. U.

    In the present investigation, a Q-switched Nd:YAG laser is used to study the various aspects of diamond processing for fabricating integrated optic and UV optoelectronic devices. Diamond is a better choice of substrate compared to silicon and gallium arsenide for the fabrication of waveguides to perform operations such as modulation, switching, multiplexing, and filtering, particularly in the ultraviolet spectrum. The experimental setup of the present investigation consists of two Q-Switched Nd:YAG lasers capable of operating at wavelengths of 1064 nm and 532 nm. The diamond cutting is performed using these two wavelengths by making the "V"-shaped groove with various opening angle. The variation of material loss of diamond during cutting is noted for the two wavelengths. The cut surface morphology and elemental and structural analysis of graphite formed during processing in both cases are compared using scanning electron microscopy (SEM) and laser Raman spectroscopy. Both the Q-Switched Nd:YAG laser systems (at 1064 nm and 532 nm) show very good performance in terms of peak-to-peak output stability, minimal spot diameter, smaller divergence angle, higher peak power in Q-switched mode, and good fundamental TEM00 mode quality for processing natural diamond stones. Less material loss and minimal micro cracks are achieved with wavelength 532 nm whereas a better diamond cut surface is achieved with processing at 1064 nm with minimum roughness.

  12. All-optical ultrafast XOR/XNOR logic gates, binary counter, and double-bit comparator with silicon microring resonators.

    PubMed

    Sethi, Purnima; Roy, Sukhdev

    2014-10-01

    We present designs of all-optical ultrafast YES/NOT, XOR/XNOR logic gates, binary counter, and double-bit comparator based on all-optical switching by two-photon absorption induced free-carrier injection in silicon 2 × 2 add-drop microring resonators. The proposed circuits have been theoretically analyzed using time-domain coupled-mode theory based on reported experimental values to realize low power (∼ 28 mW) ultrafast (∼ 22 ps) operation with high modulation (80%) and bit rate (45 Gb/s). The designs are complementary metal-oxide semiconductor compatible and provide advantages of high Q-factor, tunability, compactness, cascadibility, scalability, reconfigurability, simplicity, and minimal number of switches and inputs for realization of the desired logic. Although a two-bit counter has been shown, the scheme can easily be extended to N-bit counter through cascading.

  13. Metal induced crystallized poly-Si-based conductive bridge resistive switching memory device with one transistor and one resistor architecture

    NASA Astrophysics Data System (ADS)

    Chand, Umesh; Huang, Chun-Yang; Kumar, Dayanand; Tseng, Tseung-Yuen

    2015-11-01

    In this letter, the metal induced crystallization (MIC) process is used in the Si-based conductive bridging resistive random access memory (CBRAM) application. The amorphous Si (a-Si) is transformed to crystallized poly-silicon (poly-Si) at a low temperature by using Ni metal for inducing poly-Si to provide the resistive switching. The MIC process can produce a highly preferred orientation poly-Si film, which can create the exact paths or grain boundaries through the top and down electrodes in the present CBRAM device. The grain boundary in MIC poly-Si layer can confine the conductive filament of metal bridging growth in it, which can improve the switching fluctuation behavior in the nonvolatile memory application. Compared with the a-Si based device, a significant improvement in terms of resistive switching parameters such as stability and resistance distribution is demonstrated in the MIC poly-Si CBRAM device. Moreover, the well-behaved memory performance, such as high ON/OFF resistance ratio (4 order), a large AC endurance (106), and good retention characteristics (104 s at 125 °C) are achieved in the Cu/poly-Si/n+-Si CMOS compatible cross bar structure.

  14. Resistive switching of Pt/TiO x /Pt devices fabricated on flexible Parylene-C substrates

    NASA Astrophysics Data System (ADS)

    Khiat, Ali; Cortese, Simone; Serb, Alexander; Prodromakis, Themistoklis

    2017-01-01

    Pt/TiO x /Pt resistive switching (RS) devices are considered to be amongst the most promising candidates in memristor family and the technology transfer to flexible substrates could open the way to new opportunities for flexible memory implementations. Hence, an important goal is to achieve a fully flexible RS memory technology. Nonetheless, several fabrication challenges are present and must be solved prior to achieving reliable device fabrication and good electronic performances. Here, we propose a fabrication method for the successful transfer of Pt/TiO x /Pt stack onto flexible Parylene-C substrates. The devices were electrically characterised, exhibiting both digital and analogue memory characteristics, which are obtained by proper adjustment of pulsing schemes during tests. This approach could open new application possibilities of these devices in neuromorphic computing, data processing, implantable sensors and bio-compatible neural interfaces.

  15. All optical measurement of an unknown wideband microwave frequency

    NASA Astrophysics Data System (ADS)

    Kumar, A.; Priye, V.; Raj Singh, R.

    2016-12-01

    A novel all optical measurement scheme is proposed to measure wideband microwave frequencies up to 30 GHz. The proposed method is based on a four-wave mixing (FWM) approach in a semiconductor optical amplifier (SOA) of both even order side-bands generated by an unknown microwave frequency modulating an optical carrier. The optical power of a generated FWM signal depends on frequency spacing between extracted side-bands. A mathematical relation is established between FWM power and frequency of an unknown signal. A calibration curve is drawn based on the mathematical relation which predicts the unknown frequency from power withdrawn after FWM.

  16. All-optical processing in coherent nonlinear spectroscopy

    SciTech Connect

    Oron, Dan; Dudovich, Nirit; Silberberg, Yaron

    2004-08-01

    In spectroscopy, the fingerprint of a substance is usually comprised of a sequence of spectral lines with characteristic frequencies and strengths. Identification of substances often involves postprocessing, where the measured spectrum is compared with tabulated fingerprint spectra. Here we suggest a scheme for nonlinear spectroscopy, where, through coherent control of the nonlinear process, the information from the entire spectrum can be practically collected into a single coherent entity. We apply this for all-optical analysis of coherent Raman spectra and demonstrate enhanced detection and effective background suppression using coherent processing.

  17. All-optical photon echo on a chip

    NASA Astrophysics Data System (ADS)

    Moiseev, E. S.; Moiseev, S. A.

    2017-01-01

    We demonstrate that a photon echo can be implemented by all-optical means using an array of on-chip high-finesse ring cavities whose parameters are chirped in such a way as to support equidistant spectra of cavity modes. When launched into such a system, a classical or quantum optical signal—even a single-photon field—becomes distributed between individual cavities, giving rise to prominent coherence echo revivals at well-defined delay times, controlled by the chirp of cavity parameters. This effect enables long storage times for high-throughput broadband optical delay and quantum memory.

  18. All optical indentation probe for endoscopic diagnosis of ostheoarthritis

    NASA Astrophysics Data System (ADS)

    Marchi, G.; Jost, M.; Steinkopff, A.; Prein, C.; Aszodi, A.; Clausen-Schaumann, H.; Roths, J.

    2015-05-01

    A novel kind of miniaturized, all optical probe concept to measure the elasticity of biological tissues is here presented. The probe is based on fibre Bragg grating sensors (FBG) inscribed in optical fibres. The measurement procedure exploits the high strain sensitivity of Bragg gratings. A study on the reproducibility, reliability, and resolution of the sensor is presented and a first measurement on bovine cartilage tissue is reported. A linear elastic model of the cartilage has been used to analyse the data. The results indicate a good agreement with previous values given in the literature for micro-indentation.

  19. Probing Cu doped Ge0.3Se0.7 based resistance switching memory devices with random telegraph noise

    NASA Astrophysics Data System (ADS)

    Soni, R.; Meuffels, P.; Petraru, A.; Weides, M.; Kügeler, C.; Waser, R.; Kohlstedt, H.

    2010-01-01

    The ultimate sensitivity of any solid state device is limited by fluctuations. Fluctuations are manifestations of the thermal motion of matter and the discreteness of its structure which are also inherent ingredients during the resistive switching process of resistance random access memory (RRAM) devices. In quest for the role of fluctuations in different memory states and to develop resistive switching based nonvolatile memory devices, here we present our study on random telegraph noise (RTN) resistance fluctuations in Cu doped Ge0.3Se0.7 based RRAM cells. The influence of temperature and electric field on the RTN fluctuations is studied on different resistance states of the memory cells to reveal the dynamics of the underlying fluctuators. Our analysis indicates that the observed fluctuations could arise from thermally activated transpositions of Cu ions inside ionic or redox "double-site traps" triggering fluctuations in the current transport through a filamentary conducting path. Giant RTN fluctuations characterized by relative resistance variations of up to 50% in almost macroscopic samples clearly point to the existence of weak links with small effective cross-sectional areas along the conducting paths. Such large resistance fluctuations can be an important issue for the industrial applications of RRAM devices because they might lead to huge bit-error rates during reading cycles.

  20. Rate-distance tradeoff and resource costs for all-optical quantum repeaters

    NASA Astrophysics Data System (ADS)

    Pant, Mihir; Krovi, Hari; Englund, Dirk; Guha, Saikat

    2017-01-01

    We present a resource-performance tradeoff of an all-optical quantum repeater that uses photon sources, linear optics, photon detectors, and classical feedforward at each repeater node, but no quantum memories. We show that the quantum-secure key rate has the form R (η ) =D ηs bits per mode, where η is the end-to-end channel's transmissivity, and the constants D and s are functions of various device inefficiencies and the resource constraint, such as the number of available photon sources at each repeater node. Even with lossy devices, we show that it is possible to attain s <1 , and in turn outperform the maximum key rate attainable without quantum repeaters, Rdirect(η ) =-log2(1 -η ) ≈(1 /ln2 ) η bits per mode for η ≪1 , beyond a certain total range L , where η ˜e-α L in optical fiber. We also propose a suite of modifications to a recently proposed all-optical repeater protocol that ours builds upon, which lower the number of photon sources required to create photonic clusters at the repeaters so as to outperform Rdirect(η ) , from ˜1011 to ˜106 photon sources per repeater node. We show that the optimum separation between repeater nodes is independent of the total range L and is around 1.5 km for assumptions we make on various device losses.

  1. High-speed all-optical logic inverter based on stimulated Raman scattering in silicon nanocrystal.

    PubMed

    Sen, Mrinal; Das, Mukul K

    2015-11-01

    In this paper, we propose a new device architecture for an all-optical logic inverter (NOT gate), which is cascadable with a similar device. The inverter is based on stimulated Raman scattering in silicon nanocrystal waveguides, which are embedded in a silicon photonic crystal structure. The Raman response function of silicon nanocrystal is evaluated to explore the transfer characteristic of the inverter. A maximum product criterion for the noise margin is taken to analyze the cascadability of the inverter. The time domain response of the inverter, which explores successful inversion operation at 100 Gb/s, is analyzed. Propagation delay of the inverter is on the order of 5 ps, which is less than the delay in most of the electronic logic families as of today. Overall dimension of the device is around 755  μm ×15  μm, which ensures integration compatibility with the matured silicon industry.

  2. Verification of redox-processes as switching and retention failure mechanisms in Nb:SrTiO3/metal devices

    NASA Astrophysics Data System (ADS)

    Baeumer, C.; Raab, N.; Menke, T.; Schmitz, C.; Rosezin, R.; Müller, P.; Andrä, M.; Feyer, V.; Bruchhaus, R.; Gunkel, F.; Schneider, C. M.; Waser, R.; Dittmann, R.

    2016-07-01

    Nanoscale redox reactions in transition metal oxides are believed to be the physical foundation of memristive devices, which present a highly scalable, low-power alternative for future non-volatile memory devices. The interface between noble metal top electrodes and Nb-doped SrTiO3 single crystals may serve as a prominent but not yet well-understood example of such memristive devices. In this report, we will present experimental evidence that nanoscale redox reactions and the associated valence change mechanism are indeed responsible for the resistance change in noble metal/Nb-doped SrTiO3 junctions with dimensions ranging from the micrometer scale down to the nanometer regime. Direct verification of the valence change mechanism is given by spectromicroscopic characterization of switching filaments. Furthermore, it is found that the resistance change over time is driven by the reoxidation of a previously oxygen-deficient region. The retention times of the low resistance states, accordingly, can be dramatically improved under vacuum conditions as well as through the insertion of a thin Al2O3 layer which prevents this reoxidation. These insights finally confirm the resistive switching mechanism at these interfaces and are therefore of significant importance for the study and application of memristive devices based on Nb-doped SrTiO3 as well as systems with similar switching mechanisms.Nanoscale redox reactions in transition metal oxides are believed to be the physical foundation of memristive devices, which present a highly scalable, low-power alternative for future non-volatile memory devices. The interface between noble metal top electrodes and Nb-doped SrTiO3 single crystals may serve as a prominent but not yet well-understood example of such memristive devices. In this report, we will present experimental evidence that nanoscale redox reactions and the associated valence change mechanism are indeed responsible for the resistance change in noble metal/Nb-doped Sr

  3. Electron transfer at the contact between Al electrode and gold nanoparticles of polymer: Nanoparticle resistive switching devices studied by alternating current impedance spectroscopy

    SciTech Connect

    Ouyang, Jianyong

    2013-12-02

    Electron transfer at the contact between an Al electrode and Au nanoparticles of polymer:nanoparticle devices is studied by ac impedance spectroscopy. The devices have a polystyrene layer embedded with Au nanoparticles capped with conjugated 2-naphthalenethiol sandwiched between Al and MoO{sub 3}/Al electrodes, and they exhibit electrode-sensitive resistive switches. The devices in the pristine or high resistance state have high capacitance. The capacitance decreases after the devices switch to a low resistance state by a voltage scan. The change in the capacitance is attributed to the voltage-induced change on the electronic structure of the contact between the Al electrode and Au nanoparticles.

  4. Control of randomly scattered surface plasmon polaritons for multiple-input and multiple-output plasmonic switching devices

    NASA Astrophysics Data System (ADS)

    Choi, Wonjun; Jo, Yonghyeon; Ahn, Joonmo; Seo, Eunsung; Park, Q.-Han; Jhon, Young Min; Choi, Wonshik

    2017-03-01

    Merging multiple microprocessors with high-speed optical networks has been considered a promising strategy for the improvement of overall computation power. However, the loss of the optical communication bandwidth is inevitable when interfacing between optical and electronic components. Here we present an on-chip plasmonic switching device consisting of a two-dimensional (2D) disordered array of nanoholes on a thin metal film that can provide multiple-input and multiple-output channels for transferring information from a photonic to an electronic platform. In this device, the surface plasmon polaritons (SPPs) generated at individual nanoholes become uncorrelated on their way to the detection channel due to random multiple scattering. We exploit this decorrelation effect to use individual nanoholes as independent antennas, and demonstrated that more than 40 far-field incident channels can be delivered simultaneously to the SPP channels, an order of magnitude improvement over conventional 2D patterned devices.

  5. Control of randomly scattered surface plasmon polaritons for multiple-input and multiple-output plasmonic switching devices

    PubMed Central

    Choi, Wonjun; Jo, Yonghyeon; Ahn, Joonmo; Seo, Eunsung; Park, Q-Han; Jhon, Young Min; Choi, Wonshik

    2017-01-01

    Merging multiple microprocessors with high-speed optical networks has been considered a promising strategy for the improvement of overall computation power. However, the loss of the optical communication bandwidth is inevitable when interfacing between optical and electronic components. Here we present an on-chip plasmonic switching device consisting of a two-dimensional (2D) disordered array of nanoholes on a thin metal film that can provide multiple-input and multiple-output channels for transferring information from a photonic to an electronic platform. In this device, the surface plasmon polaritons (SPPs) generated at individual nanoholes become uncorrelated on their way to the detection channel due to random multiple scattering. We exploit this decorrelation effect to use individual nanoholes as independent antennas, and demonstrated that more than 40 far-field incident channels can be delivered simultaneously to the SPP channels, an order of magnitude improvement over conventional 2D patterned devices. PMID:28262721

  6. Control of randomly scattered surface plasmon polaritons for multiple-input and multiple-output plasmonic switching devices.

    PubMed

    Choi, Wonjun; Jo, Yonghyeon; Ahn, Joonmo; Seo, Eunsung; Park, Q-Han; Jhon, Young Min; Choi, Wonshik

    2017-03-06

    Merging multiple microprocessors with high-speed optical networks has been considered a promising strategy for the improvement of overall computation power. However, the loss of the optical communication bandwidth is inevitable when interfacing between optical and electronic components. Here we present an on-chip plasmonic switching device consisting of a two-dimensional (2D) disordered array of nanoholes on a thin metal film that can provide multiple-input and multiple-output channels for transferring information from a photonic to an electronic platform. In this device, the surface plasmon polaritons (SPPs) generated at individual nanoholes become uncorrelated on their way to the detection channel due to random multiple scattering. We exploit this decorrelation effect to use individual nanoholes as independent antennas, and demonstrated that more than 40 far-field incident channels can be delivered simultaneously to the SPP channels, an order of magnitude improvement over conventional 2D patterned devices.

  7. Multiport InP monolithically integrated all-optical wavelength router.

    PubMed

    Zheng, Xiu; Raz, Oded; Calabretta, Nicola; Zhao, Dan; Lu, Rongguo; Liu, Yong

    2016-08-15

    An indium phosphide-based monolithically integrated wavelength router is demonstrated in this Letter. The wavelength router has four input ports and four output ports, which integrate four wavelength converters and a 4×4 arrayed-waveguide grating router. Each wavelength converter is achieved based on cross-gain modulation and cross-phase modulation effects in a semiconductor optical amplifier. Error-free wavelength switching for a non-return-to-zero 231-1 ps eudorandom binary sequence at 40 Gb/s data rate is performed. Both 1×4 and 3×1 all-optical routing functions of this chip are demonstrated for the first time with power penalties as low as 3.2 dB.

  8. Integrated holographic system for all-optical manipulation of developing embryos

    PubMed Central

    Torres-Mapa, Maria Leilani; Antkowiak, Maciej; Cizmarova, Hana; Ferrier, David E. K.; Dholakia, Kishan; Gunn-Moore, Frank J.

    2011-01-01

    We demonstrate a system for the combined optical injection and trapping of developing embryos. A Ti:sapphire femtosecond laser in tandem with a spatial light modulator, is used to perform fast and accurate beam-steering and multiplexing. We show successful intracellular delivery of a range of impermeable molecules into individual blastomeres of the annelid Pomatoceros lamarckii embryo by optoinjection, even when the embryo is still enclosed in a chorion. We also demonstrate the ability of the femtosecond laser optoinjection to deliver materials into inner layers of cells in a well-developed embryo. By switching to the continuous wave mode of the Ti:sapphire laser, the same system can be employed to optically trap and orient the 60 μm sized P. lamarckii embryo whilst maintaining its viability. Hence, a complete all-optical manipulation platform is demonstrated paving the way towards single-cell genetic modification and cell lineage mapping in emerging developmental biology model species. PMID:21698019

  9. Device-size dependence of field-free spin-orbit torque induced magnetization switching in antiferromagnet/ferromagnet structures

    NASA Astrophysics Data System (ADS)

    Kurenkov, A.; Zhang, C.; DuttaGupta, S.; Fukami, S.; Ohno, H.

    2017-02-01

    We study spin-orbit torque induced magnetization switching in devices consisting of an antiferromagnetic PtMn and ferromagnetic Co/Ni multilayer with sizes ranging from 5 μm to 50 nm. As the size decreases, switching behavior changes from analogue-like to stepwise with several intermediate levels. The number of intermediate levels decreases with the decreasing size and finally evolves into a binary mode below a certain threshold. The results are found to be explained by a unique reversal process of this system, where ferromagnetic domains comprising a number of polycrystalline grains reverse individually and among the domains both out-of-plane and in-plane components of exchange bias vary.

  10. Production and all-optical deceleration of molecular beams

    NASA Astrophysics Data System (ADS)

    Chen, Gary; Jayich, Andrew; Long, Xueping; Ransford, Anthony; Campbell, Wesley

    2015-05-01

    Ultracold molecules open up new opportunities in many areas of study, including many-body physics, quantum chemistry, quantum information, and precision measurements. Current methods cannot easily address the spontaneous decay of molecules into dark states without an amalgam of repump lasers. We present an alternative method to produce cold molecules. A cryogenic buffer gas beam (CBGB) is used to create an intense, slow, cold source of molecules. By using a CBGB for the production, we can quench vibrational modes that cannot be addressed with optical methods. This is then followed by an all-optical scheme using a single ultra-fast laser to decelerate the molecules and a continuous wave laser to cool the species. We have started experiments with strontium monohydride (SrH), but the proposed method should be applicable to a wide range of molecular species.

  11. All-Optical Implementation of the Ant Colony Optimization Algorithm

    PubMed Central

    Hu, Wenchao; Wu, Kan; Shum, Perry Ping; Zheludev, Nikolay I.; Soci, Cesare

    2016-01-01

    We report all-optical implementation of the optimization algorithm for the famous “ant colony” problem. Ant colonies progressively optimize pathway to food discovered by one of the ants through identifying the discovered route with volatile chemicals (pheromones) secreted on the way back from the food deposit. Mathematically this is an important example of graph optimization problem with dynamically changing parameters. Using an optical network with nonlinear waveguides to represent the graph and a feedback loop, we experimentally show that photons traveling through the network behave like ants that dynamically modify the environment to find the shortest pathway to any chosen point in the graph. This proof-of-principle demonstration illustrates how transient nonlinearity in the optical system can be exploited to tackle complex optimization problems directly, on the hardware level, which may be used for self-routing of optical signals in transparent communication networks and energy flow in photonic systems. PMID:27222098

  12. All-Optical Implementation of the Ant Colony Optimization Algorithm

    NASA Astrophysics Data System (ADS)

    Hu, Wenchao; Wu, Kan; Shum, Perry Ping; Zheludev, Nikolay I.; Soci, Cesare

    2016-05-01

    We report all-optical implementation of the optimization algorithm for the famous “ant colony” problem. Ant colonies progressively optimize pathway to food discovered by one of the ants through identifying the discovered route with volatile chemicals (pheromones) secreted on the way back from the food deposit. Mathematically this is an important example of graph optimization problem with dynamically changing parameters. Using an optical network with nonlinear waveguides to represent the graph and a feedback loop, we experimentally show that photons traveling through the network behave like ants that dynamically modify the environment to find the shortest pathway to any chosen point in the graph. This proof-of-principle demonstration illustrates how transient nonlinearity in the optical system can be exploited to tackle complex optimization problems directly, on the hardware level, which may be used for self-routing of optical signals in transparent communication networks and energy flow in photonic systems.

  13. Graphene based All-Optical Spatial Terahertz Modulator

    PubMed Central

    Wen, Qi-Ye; Tian, Wei; Mao, Qi; Chen, Zhi; Liu, Wei-Wei; Yang, Qing-Hui; Sanderson, Matthew; Zhang, Huai-Wu

    2014-01-01

    We demonstrate an all-optical terahertz modulator based on single-layer graphene on germanium (GOG), which can be driven by a 1.55 μm CW laser with a low-level photodoping power. Both the static and dynamic THz transmission modulation experiments were carried out. A spectrally wide-band modulation of the THz transmission is obtained in a frequency range from 0.25 to 1 THz, and a modulation depth of 94% can be achieved if proper pump power is applied. The modulation speed of the modulator was measured to be ~200 KHz using a 340 GHz carrier. A theoretical model is proposed for the modulator and the calculation results indicate that the enhanced THz modulation is mainly due to the third order nonlinear effect in the optical conductivity of the graphene monolayer. PMID:25491194

  14. All-optical generation of surface plasmons in graphene

    NASA Astrophysics Data System (ADS)

    Constant, T. J.; Hornett, S. M.; Chang, D. E.; Hendry, E.

    2016-02-01

    Surface plasmons in graphene offer a compelling route to many useful photonic technologies. As a plasmonic material, graphene offers several intriguing properties, such as excellent electro-optic tunability, crystalline stability, large optical nonlinearities and extremely high electromagnetic field concentration. As such, recent demonstrations of surface plasmon excitation in graphene using near-field scattering of infrared light have received intense interest. Here we present an all-optical plasmon coupling scheme which takes advantage of the intrinsic nonlinear optical response of graphene. Free-space, visible light pulses are used to generate surface plasmons in a planar graphene sheet using difference frequency wave mixing to match both the wavevector and energy of the surface wave. By carefully controlling the phase matching conditions, we show that one can excite surface plasmons with a defined wavevector and direction across a large frequency range, with an estimated photon efficiency in our experiments approaching 10-5.

  15. Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment

    NASA Astrophysics Data System (ADS)

    Chen, Kai-Huang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Liang, Shu-Ping; Young, Tai-Fa; Syu, Yong-En; Sze, Simon M.

    2016-02-01

    Bipolar switching resistance behaviors of the Gd:SiO2 resistive random access memory (RRAM) devices on indium tin oxide electrode by the low-temperature supercritical CO2-treated technology were investigated. For physical and electrical measurement results obtained, the improvement on oxygen qualities, properties of indium tin oxide electrode, and operation current of the Gd:SiO2 RRAM devices were also observed. In addition, the initial metallic filament-forming model analyses and conduction transferred mechanism in switching resistance properties of the RRAM devices were verified and explained. Finally, the electrical reliability and retention properties of the Gd:SiO2 RRAM devices for low-resistance state (LRS)/high-resistance state (HRS) in different switching cycles were also measured for applications in nonvolatile random memory devices.

  16. A sharp-switching device with free surface and buried gates based on band modulation and feedback mechanisms

    NASA Astrophysics Data System (ADS)

    Solaro, Y.; Fonteneau, P.; Legrand, C. A.; Fenouillet-Beranger, C.; Ferrari, P.; Cristoloveanu, S.

    2016-02-01

    We propose and demonstrate experimentally a band-modulation device with extremely sharp switching capability. The Z3-FET (Zero gate, Zero swing and Zero impact ionization) has no top gate, is processed with FDSOI CMOS technology, and makes use of two adjacent buried ground planes acting as back gates. The buried gates emulate respectively N+ and P+ regions in the undoped body, forming a virtual thyristor-like NPNP structure with feedback operation. Vertical output IA-VA and transfer IA-VG characteristics over more than 8 decades of current are measured with relatively low gate and drain bias (<3 V).

  17. Using Transverse Optical Patterns for Ultra-Low-Light All-Optical Switching

    DTIC Science & Technology

    2008-01-01

    similar system, Birnbaum et al. [18] observe an effect known as photon- blockade in analogy to the Coulomb -blockade effect observed in semiconductor... leys that contribute to the hexagon structure. As an example, for h = 0, the potential well takes the form of a single ring of uniform depth and for

  18. All-optical Integrated Switches Based on Azo-benzene Liquid Crystals on Silicon

    DTIC Science & Technology

    2011-11-01

    optical signal. The first consists of a commercial NLC mixture embedded in a SiO2/Si groove. The numerical simulation, obtained with an ad hoc model...substrates filled with NLC . With a particular glass surface treatment ( NLC alignment condition φ0) we can avoid the use of an external bias voltage, as in...director n̂ with tilt (θ) and twist (φ) angle. The waveguide structure, schematically illustrated in Fig. 1, consists of nematic LC ( NLC ) E7

  19. Studies in optical parallel processing. [All optical and electro-optic approaches

    NASA Technical Reports Server (NTRS)

    Lee, S. H.

    1978-01-01

    Threshold and A/D devices for converting a gray scale image into a binary one were investigated for all-optical and opto-electronic approaches to parallel processing. Integrated optical logic circuits (IOC) and optical parallel logic devices (OPA) were studied as an approach to processing optical binary signals. In the IOC logic scheme, a single row of an optical image is coupled into the IOC substrate at a time through an array of optical fibers. Parallel processing is carried out out, on each image element of these rows, in the IOC substrate and the resulting output exits via a second array of optical fibers. The OPAL system for parallel processing which uses a Fabry-Perot interferometer for image thresholding and analog-to-digital conversion, achieves a higher degree of parallel processing than is possible with IOC.

  20. A new asymmetric directional microphone algorithm with automatic mode-switching ability for binaural hearing support devices.

    PubMed

    Kim, Jinryoul; Nam, Kyoung Won; Yook, Sunhyun; Jang, Dong Pyo; Kim, In Young; Hong, Sung Hwa

    2015-06-01

    For hearing support devices, it is important to minimize the negative effect of ambient noises for speech recognition but also, at the same time, supply natural ambient sounds to the hearing-impaired person. However, conventional fixed bilateral asymmetric directional microphone (DM) algorithms cannot perform in such a way when the DM-mode device and a dominant noise (DN) source are placed on the same lateral hemisphere. In this study, a new binaural asymmetric DM algorithm that can overcome the defects of conventional algorithms is proposed. The proposed algorithm can estimate the position of a specific DN in the 90°-270° range and switch directional- and omnidirectional-mode devices automatically if the DM-mode device and the DN are placed in opposite lateral hemispheres. Computer simulation and KEMAR mannequin recording tests demonstrated that the performance of the conventional algorithm deteriorated when the DM-mode device and the DN were placed in the opposite hemisphere; in contrast, the performance of the proposed algorithm was consistently maintained regardless of directional variations in the DN. Based on these experimental results, the proposed algorithm may be able to improve speech quality and intelligibility for hearing-impaired persons who have similar degrees of hearing impairment in both ears.

  1. Investigation of the ferroelectric switching behavior of P(VDF-TrFE)-PMMA blended films for synaptic device applications

    NASA Astrophysics Data System (ADS)

    Kim, E. J.; Kim, K. A.; Yoon, S. M.

    2016-02-01

    Synaptic plasticity can be mimicked by electronic synaptic devices. By using ferroelectric thin films as gate insulator for thin-film transistors (TFT), channel conductance can be defined as the synaptic plasticity, and gradually modulated by the variations in amounts of aligned ferroelectric dipoles. Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)]-poly(methyl methacrylate) (PMMA) blended films are chosen and their switching kinetics are investigated by using the Kolmogorov-Avrami-Ishibashi model. The switching time for ferroelectric polarization is sensitively influenced by the amplitude of applied electric field and volumetric ratio of ferroelectric beta-phases in the P(VDF-TrFE)-PMMA films. The switching time of the P(VDF-TrFE) increases with decreasing the pulse amplitude and/or the ratio of ferroelectric beta-phases by incorporation of PMMA. The activation electric field is also found to increase as the increase in blended amount of PMMA. Synapse TFTs are fabricated using the P(VDF-TrFE)-PMMA as gate insulator and In-Ga-Zn-O active channels. The drain currents of the synapse TFTs gradually increased when the voltage pulse signals with given duration are repeatedly applied. This suggests that the synaptic weights can be modulated by the number of external pulse signals, and that the proposed synapse TFT can be applied for mimicking the operations of bio-synapses.

  2. All-optical regulation of gene expression in targeted cells

    NASA Astrophysics Data System (ADS)

    Wang, Yisen; He, Hao; Li, Shiyang; Liu, Dayong; Lan, Bei; Hu, Minglie; Cao, Youjia; Wang, Chingyue

    2014-06-01

    Controllable gene expression is always a challenge and of great significance to biomedical research and clinical applications. Recently, various approaches based on extra-engineered light-sensitive proteins have been developed to provide optogenetic actuators for gene expression. Complicated biomedical techniques including exogenous genes engineering, transfection, and material delivery are needed. Here we present an all-optical method to regulate gene expression in targeted cells. Intrinsic or exogenous genes can be activated by a Ca2+-sensitive transcription factor nuclear factor of activated T cells (NFAT) driven by a short flash of femtosecond-laser irradiation. When applied to mesenchymal stem cells, expression of a differentiation regulator Osterix can be activated by this method to potentially induce differentiation of them. A laser-induced ``Ca2+-comb'' (LiCCo) by multi-time laser exposure is further developed to enhance gene expression efficiency. This noninvasive method hence provides an encouraging advance of gene expression regulation, with promising potential of applying in cell biology and stem-cell science.

  3. All-optical photoacoustic microscopy using a MEMS scanning mirror

    NASA Astrophysics Data System (ADS)

    Chen, Sung-Liang; Xie, Zhixing; Ling, Tao; Wei, Xunbin; Guo, L. Jay; Wang, Xueding

    2013-03-01

    It has been studied that a potential marker to obtain prognostic information about bladder cancer is tumor neoangiogenesis, which can be quantified by morphometric characteristics such as microvascular density. Photoacoustic microscopy (PAM) can render sensitive three-dimensional (3D) mapping of microvasculature, providing promise to evaluate the neoangiogenesis that is closely related to the diagnosis of bladder cancer. To ensure good image quality, it is desired to acquire bladder PAM images from its inside via the urethra, like conventional cystoscope. Previously, we demonstrated all-optical PAM systems using polymer microring resonators to detect photoacoustic signals and galvanometer mirrors for laser scanning. In this work, we build a miniature PAM system using a microelectromechanical systems (MEMS) scanning mirror, demonstrating a prototype of an endoscopic PAM head capable of high imaging quality of the bladder. The system has high resolutions of 17.5 μm in lateral direction and 19 μm in the axial direction at a distance of 5.4 mm. Images of printed grids and the 3D structure of microvasculature in animal bladders ex vivo by the system are demonstrated.

  4. All-optical three-dimensional electron pulse compression

    NASA Astrophysics Data System (ADS)

    Jie Wong, Liang; Freelon, Byron; Rohwer, Timm; Gedik, Nuh; Johnson, Steven G.

    2015-01-01

    We propose an all-optical, three-dimensional electron pulse compression scheme in which Hermite-Gaussian optical modes are used to fashion a three-dimensional optical trap in the electron pulse’s rest frame. We show that the correct choices of optical incidence angles are necessary for optimal compression. We obtain analytical expressions for the net impulse imparted by Hermite-Gaussian free-space modes of arbitrary order. Although we focus on electrons, our theory applies to any charged particle and any particle with non-zero polarizability in the Rayleigh regime. We verify our theory numerically using exact solutions to Maxwell’s equations for first-order Hermite-Gaussian beams, demonstrating single-electron pulse compression factors of \\gt {{10}2} in both longitudinal and transverse dimensions with experimentally realizable optical pulses. The proposed scheme is useful in ultrafast electron imaging for both single- and multi-electron pulse compression, and as a means of circumventing temporal distortions in magnetic lenses when focusing ultrashort electron pulses. Other applications include the creation of flat electron beams and ultrashort electron bunches for coherent terahertz emission.

  5. All-optical broadband ultrasonography of single cells

    PubMed Central

    Dehoux, T.; Ghanem, M. Abi; Zouani, O. F.; Rampnoux, J.-M.; Guillet, Y.; Dilhaire, S.; Durrieu, M.-C.; Audoin, B.

    2015-01-01

    Cell mechanics play a key role in several fundamental biological processes, such as migration, proliferation, differentiation and tissue morphogenesis. In addition, many diseased conditions of the cell are correlated with altered cell mechanics, as in the case of cancer progression. For this there is much interest in methods that can map mechanical properties with a sub-cell resolution. Here, we demonstrate an inverted pulsed opto-acoustic microscope (iPOM) that operates in the 10 to 100 GHz range. These frequencies allow mapping quantitatively cell structures as thin as 10 nm and resolving the fibrillar details of cells. Using this non-invasive all-optical system, we produce high-resolution images based on mechanical properties as the contrast mechanisms, and we can observe the stiffness and adhesion of single migrating stem cells. The technique should allow transferring the diagnostic and imaging abilities of ultrasonic imaging to the single-cell scale, thus opening new avenues for cell biology and biomaterial sciences. PMID:25731090

  6. Characteristics of resistive switching in ZnO/SiO x multi-layers for transparent nonvolatile memory devices

    NASA Astrophysics Data System (ADS)

    Kim, Kyongmin; Kim, Eunkyeom; Kim, Youngill; Sok, Jung Hyun; Park, Kyoungwan

    2016-12-01

    Bipolar resistive switching in ZnO/SiO x bi-layer and ZnO/SiO x /ZnO tri-layer structures was investigated for nonvolatile memory applications. ZnO thin films were grown using the radiofrequency magnetron sputtering technique at room temperature. SiO x films were grown using plasma-enhanced chemical-vapor deposition at 200 °C. Multiple high-resistance states were observed during the set process. The high/low resistance state ratio was 10 during 100 on/off cycles. The tri-layer memory device exhibited better endurance properties than the bi-layer device. Because an asymmetric conducting filament has a weak point for charge conduction at the oxide interfaces, we attributed the good endurance property to the reproducible formation/rupture of "micro"-conducting filaments. Moreover, the dynamics of the oxygen ions in the SiO x layer plays an important role in resistive switching.

  7. Effects of drying temperature and ethanol concentration on bipolar switching characteristics of natural Aloe vera-based memory devices.

    PubMed

    Lim, Zhe Xi; Cheong, Kuan Yew

    2015-10-28

    Extracted, formulated, and processed natural Aloe vera has been used as an active layer for memory applications. The functional memory device is realized by a bottom-up structure of ITO/Aloe vera/Al in which the Aloe vera is spin-coated after mixing with different concentrations of ethanol (0-80 wt%) and subsequently dried at different temperatures (50-120 °C). From the current density-voltage measurements, the device can exhibit a reproducible bipolar switching characteristic with pure Aloe vera dried at 50 °C. It is proposed that charges are transported across the Aloe vera layer via space-charge-limited conduction (SCLC), and clusters of interstitial space formed by the functional groups of acemannans and de-esterified pectins in the dried Aloe vera contribute to the memory effect. The formation of charge traps in the Aloe vera layer is dependent on the drying temperature. The drying temperature of a memory-switching Aloe vera layer can be extended to 120 °C with the addition of appropriate amounts of ethanol. The concept of using natural Aloe vera as an active material for memory applications has been demonstrated, and the read memory window, ON/OFF ratio, and retention time are approximately 5.0 V, 10(3), and >10(4) s, respectively.

  8. Unidirectional electric field-induced spin-state switching in spin crossover based microelectronic devices

    NASA Astrophysics Data System (ADS)

    Lefter, Constantin; Tan, Reasmey; Dugay, Julien; Tricard, Simon; Molnár, Gábor; Salmon, Lionel; Carrey, Julian; Nicolazzi, William; Rotaru, Aurelian; Bousseksou, Azzedine

    2016-01-01

    We report on a molecular spin-state switching phenomenon induced by an electric field in micrometric objects of the [Fe(Htrz)2(trz)](BF4) spin crossover complex, organized between interdigitated electrodes. By applying an electric field step of 40 kV/cm at temperatures within the thermal hysteresis region of the first-order spin transition, the iron(II) ions are switched from the metastable high spin to the stable low spin state obtaining a rather incomplete transition but perfectly reversible by heating. A model based on the interaction between the electric field and the electric dipolar moment of spin crossover complexes, grasps the main features of the experimental data.

  9. Influence of material anisotropy in the switching toggle mode in MRAM devices

    NASA Astrophysics Data System (ADS)

    Olariu, Cristina Stefania; Stoleriu, Laurentiu; Stancu, Alexandru

    2007-09-01

    In the development of magneto-resistance random access memory (MRAM), the theoretical studies are now concentrated in various parameters improving. Some important parameters are the range of the operating field and the switching time. The analysis presented in this paper is concentrated to a synthetic antiferromagnet (SAF). Recently a considerable effort has been expended by Fujiwara and co-workers to the analysis of the switching mode suggested by Savtchenko et al., called also toggle MRAM, and a number of conditions were found to maximize the operating field margin; most of these studies were based on a critical-curve approach. For uniaxial anisotropy, an analytical approach is possible and simple results and critical curves are presented. For the more general case, only the micromagnetic simulation can offer results. The studies are made for different coupling constants between the two ferromagnetic layers and the results are discussed.

  10. Noise tolerance in wavelength-selective switching of optical differential quadrature-phase-shift-keying pulse train by collinear acousto-optic devices.

    PubMed

    Goto, Nobuo; Miyazaki, Yasumitsu

    2014-06-01

    Optical switching of high-bit-rate quadrature-phase-shift-keying (QPSK) pulse trains using collinear acousto-optic (AO) devices is theoretically discussed. Since the collinear AO devices have wavelength selectivity, the switched optical pulse trains suffer from distortion when the bandwidth of the pulse train is comparable to the pass bandwidth of the AO device. As the AO device, a sidelobe-suppressed device with a tapered surface-acoustic-wave (SAW) waveguide and a Butterworth-type filter device with a lossy SAW directional coupler are considered. Phase distortion of optical pulse trains at 40 to 100  Gsymbols/s in QPSK format is numerically analyzed. Bit-error-rate performance with additive Gaussian noise is also evaluated by the Monte Carlo method.

  11. Pulsed Power Switching of 4H-SIC Vertical D-Mosfet and Device Characterization

    DTIC Science & Technology

    2013-06-01

    Lawson and Stephen B. Bayne Texas Tech University, Electrical and Computer Engineering Department, Lubbock, TX 79409, USA Lin Cheng and Anant K...due to a 17% decrease in the on resistance (RdsON) with a gate bias of 20V. V. REFERENCES [1] Lawson, K.; Bayne , S.B., "Transient analysis of...2010 [2] Bayne , S.B.; Ibitayo, D., "Evaluation of SiC GTOs for pulse power switching," Pulsed Power Conference, 2003. Digest of Technical Papers

  12. Ag-nanoparticle as a Q switched device for tunable C-band fiber laser

    NASA Astrophysics Data System (ADS)

    Ahmad, H.; Ruslan, N. E.; Ali, Z. A.; Reduan, S. A.; Lee, C. S. J.; Shaharuddin, R. A.; Nayan, N.; Ismail, M. A.

    2016-12-01

    The use of silver (Ag)-nanoparticle as saturable absorber (SA) to induce tunable Q-switched fiber laser in C-band is demonstrated. The Ag-nanoparticle SA exhibits modulation depth of 31.6% and saturation intensity of 0.54 MW cm-2. The SA is integrated into the laser cavity by sandwiching it between two fiber ferrules. Lasing in CW region starts at 10 mW, whereas stable self-starting Q-switching with a central wavelength of 1558.4 nm begins at 20 mW. As the pump power increases, the repetition rate varies from 10.5 kHz to 24.4 kHz and the narrowest pulse width obtained is around 6.5 μs. The Q-switched laser has a tuning range of 27.3 nm (1552.9-1580.2 nm). The stability of the pulse is verified from the radio-freqeuncy (RF) spectrum with a measured signal-to-noise ratio (SNR) of 46.22 dB. The ability of Ag-nanoparticle as an effective SA may lead to further development of pulsed fiber laser in the field of photonics.

  13. Optical backplane interconnect switch for data processors and computers

    NASA Technical Reports Server (NTRS)

    Hendricks, Herbert D.; Benz, Harry F.; Hammer, Jacob M.

    1989-01-01

    An optoelectronic integrated device design is reported which can be used to implement an all-optical backplane interconnect switch. The switch is sized to accommodate an array of processors and memories suitable for direct replacement into the basic avionic multiprocessor backplane. The optical backplane interconnect switch is also suitable for direct replacement of the PI bus traffic switch and at the same time, suitable for supporting pipelining of the processor and memory. The 32 bidirectional switchable interconnects are configured with broadcast capability for controls, reconfiguration, and messages. The approach described here can handle a serial interconnection of data processors or a line-to-link interconnection of data processors. An optical fiber demonstration of this approach is presented.

  14. All-optical magnetic recording with circularly polarized light.

    PubMed

    Stanciu, C D; Hansteen, F; Kimel, A V; Kirilyuk, A; Tsukamoto, A; Itoh, A; Rasing, Th

    2007-07-27

    We experimentally demonstrate that the magnetization can be reversed in a reproducible manner by a single 40 femtosecond circularly polarized laser pulse, without any applied magnetic field. This optically induced ultrafast magnetization reversal previously believed impossible is the combined result of femtosecond laser heating of the magnetic system to just below the Curie point and circularly polarized light simultaneously acting as a magnetic field. The direction of this opto-magnetic switching is determined only by the helicity of light. This finding reveals an ultrafast and efficient pathway for writing magnetic bits at record-breaking speeds.

  15. Phase-coherent all-optical frequency division by three

    SciTech Connect

    Lee, Dong-Hoon; Klein, Marvin E.; Meyn, Jan-Peter; Wallenstein, Richard; Gross, Petra; Boller, Klaus-Jochen

    2003-01-01

    The properties of all-optical phase-coherent frequency division by 3, based on a self-phase-locked continuous-wave (cw) optical parametric oscillator (OPO), are investigated theoretically and experimentally. The frequency to be divided is provided by a diode laser master-oscillator power-amplifier system operated at a wavelength of 812 nm and used as the pump source of the OPO. Optical self-phase-locking of the OPO signal and idler waves is achieved by mutual injection locking of the signal wave and the intracavity frequency-doubled idler wave. The OPO process and the second-harmonic generation of the idler wave are simultaneously phase matched through quasi-phase-matching using two periodically poled sections of different period manufactured within the same LiNbO{sub 3} crystal. An optical self-phase-locking range of up to 1 MHz is experimentally observed. The phase coherence of frequency division by three is measured via the phase stability of an interference pattern formed by the input and output waves of the OPO. The fractional frequency instability of the divider is measured to be smaller than 7.6x10{sup -14} for a measurement time of 10 s (resolution limited). The self-phase-locking characteristics of the cw OPO are theoretically investigated by analytically solving the coupled field equations in the steady-state regime. For the experimental parameters of the OPO, the calculations predict a locking range of 1.3 MHz and a fractional frequency instability of 1.6x10{sup -15}, in good agreement with the experimental results.

  16. Tangled nonlinear driven chain reactions of all optical singularities

    NASA Astrophysics Data System (ADS)

    Vasil'ev, V. I.; Soskin, M. S.

    2012-03-01

    Dynamics of polarization optical singularities chain reactions in generic elliptically polarized speckle fields created in photorefractive crystal LiNbO3 was investigated in details Induced speckle field develops in the tens of minutes scale due to photorefractive 'optical damage effect' induced by incident beam of He-Ne laser. It was shown that polarization singularities develop through topological chain reactions of developing speckle fields driven by photorefractive nonlinearities induced by incident laser beam. All optical singularities (C points, optical vortices, optical diabolos,) are defined by instantaneous topological structure of the output wavefront and are tangled by singular optics lows. Therefore, they have develop in tangled way by six topological chain reactions driven by nonlinear processes in used nonlinear medium (photorefractive LiNbO3:Fe in our case): C-points and optical diabolos for right (left) polarized components domains with orthogonally left (right) polarized optical vortices underlying them. All elements of chain reactions consist from loop and chain links when nucleated singularities annihilated directly or with alien singularities in 1:9 ratio. The topological reason of statistics was established by low probability of far enough separation of born singularities pair from existing neighbor singularities during loop trajectories. Topology of developing speckle field was measured and analyzed by dynamic stokes polarimetry with few seconds' resolution. The hierarchy of singularities govern scenario of tangled chain reactions was defined. The useful space-time data about peculiarities of optical damage evolution were obtained from existence and parameters of 'islands of stability' in developing speckle fields.

  17. On the impact of fiber-delay-lines (FDL) in an all-optical network (AON) bottleneck without wavelength conversion

    NASA Astrophysics Data System (ADS)

    Argibay-Losada, Pablo Jesus; Sahin, Gokhan

    2014-08-01

    Random access memories (RAM) are fundamental in conventional electronic switches and routers to manage short-term congestion and to decrease data loss probabilities. Switches in all-optical networks (AONs), however, do not have access to optical RAM, and therefore are prone to much higher loss levels than their electronic counterparts. Fiber-delay-lines (FDLs), able to delay an optical data packet a fixed amount of time, have been proposed in the literature as a means to alleviate those high loss levels. However, they are extremely bulky to manage, so their usage introduces a trade-off between practicality and performance in the design and operation of the AON. In this paper we study the influence that FDLs have in the performance of flows crossing an all-optical switch that acts as their bottleneck. We show how extremely low numbers of FDLs (e.g., 1 or 2) can help in reducing losses by several orders of magnitude in several illustrative scenarios with high aggregation levels. Our results therefore suggest that FDLs can be a practical means of dealing with congestion in AONs in the absence of optical RAM buffers or of suitable data interchange protocols specifically designed for AONs.

  18. High Speed All Optical Nyquist Signal Generation and Full-band Coherent Detection

    PubMed Central

    Zhang, Junwen; Yu, Jianjun; Fang, Yuan; Chi, Nan

    2014-01-01

    Spectrum efficient data transmission is of key interest for high capacity optical communication systems considering the limited available bandwidth. Transmission of the high speed signal with higher-order modulation formats within the Nyquist bandwidth using coherent detection brings attractive performance advantages. However, high speed Nyquist signal generation with high order modulation formats is challenging. Electrical Nyquist pulse generation is restricted by the limited sampling rate and processor capacities of digital-to-analog convertor devices, while the optical Nyquist signals can provide a much higher symbol rate using time domain multiplexing method. However, most optical Nyquist signals are based on direct detection with simple modulation formats. Here we report the first experimental demonstration of high speed all optical Nyquist signal generation based on Sinc-shaped pulse generation and time-division multiplexing with high level modulation format and full-band coherent detection. Our experiments demonstrate a highly flexible and compatible all optical high speed Nyquist signal generation and detection scheme for future fiber communication systems. PMID:25142269

  19. On-chip passive three-port circuit of all-optical ordered-route transmission

    PubMed Central

    Liu, Li; Dong, Jianji; Gao, Dingshan; Zheng, Aoling; Zhang, Xinliang

    2015-01-01

    On-chip photonic circuits of different specific functions are highly desirable and becoming significant demands in all-optical communication network. Especially, the function to control the transmission directions of the optical signals in integrated circuits is a fundamental research. Previous schemes, such as on-chip optical circulators, are mostly realized by Faraday effect which suffers from material incompatibilities between semiconductors and magneto-optical materials. Achieving highly functional circuits in which light circulates in a particular direction with satisfied performances are still difficult in pure silicon photonics platform. Here, we propose and experimentally demonstrate a three-port passive device supporting optical ordered-route transmission based on silicon thermo-optic effect for the first time. By injecting strong power from only one port, the light could transmit through the three ports in a strict order (1→2, 2→3, 3→1) while be blocked in the opposite order (1→3, 3→2, 2→1). The blocking extinction ratios and operation bandwidths have been investigated in this paper. Moreover, with compact size, economic fabrication process and great extensibility, this proposed photonic integrated circuit is competitive to be applied in on-chip all-optical information processing systems, such as path priority selector. PMID:25970855

  20. Optical Circuit Switched Protocol

    NASA Technical Reports Server (NTRS)

    Monacos, Steve P. (Inventor)

    2000-01-01

    The present invention is a system and method embodied in an optical circuit switched protocol for the transmission of data through a network. The optical circuit switched protocol is an all-optical circuit switched network and includes novel optical switching nodes for transmitting optical data packets within a network. Each optical switching node comprises a detector for receiving the header, header detection logic for translating the header into routing information and eliminating the header, and a controller for receiving the routing information and configuring an all optical path within the node. The all optical path located within the node is solely an optical path without having electronic storage of the data and without having optical delay of the data. Since electronic storage of the header is not necessary and the initial header is eliminated by the first detector of the first switching node. multiple identical headers are sent throughout the network so that subsequent switching nodes can receive and read the header for setting up an optical data path.

  1. All-optical hash code generation and verification for low latency communications.

    PubMed

    Paquot, Yvan; Schröder, Jochen; Pelusi, Mark D; Eggleton, Benjamin J

    2013-10-07

    We introduce an all-optical, format transparent hash code generator and a hash comparator for data packets verification with low latency at high baudrate. The device is reconfigurable and able to generate hash codes based on arbitrary functions and perform the comparison directly in the optical domain. Hash codes are calculated with custom interferometric circuits implemented with a Fourier domain optical processor. A novel nonlinear scheme featuring multiple four-wave mixing processes in a single waveguide is implemented for simultaneous phase and amplitude comparison of the hash codes before and after transmission. We demonstrate the technique with single polarisation BPSK and QPSK signals up to a data rate of 80 Gb/s.

  2. All-optical phase modulation in a cavity-polariton Mach–Zehnder interferometer

    PubMed Central

    Sturm, C.; Tanese, D.; Nguyen, H.S.; Flayac, H.; Galopin, E.; Lemaître, A.; Sagnes, I.; Solnyshkov, D.; Amo, A.; Malpuech, G.; Bloch, J.

    2014-01-01

    Quantum fluids based on light is a highly developing research field, since they provide a nonlinear platform for developing optical functionalities and quantum simulators. An important issue in this context is the ability to coherently control the properties of the fluid. Here we propose an all-optical approach for controlling the phase of a flow of cavity-polaritons, making use of their strong interactions with localized excitons. Here we illustrate the potential of this method by implementing a compact exciton–polariton interferometer, which output intensity and polarization can be optically controlled. This interferometer is cascadable with already reported polariton devices and is promising for future polaritonic quantum optic experiments. Complex phase patterns could be also engineered using this optical method, providing a key tool to build photonic artificial gauge fields. PMID:24513781

  3. Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance.

    PubMed

    Niu, Gang; Calka, Pauline; Auf der Maur, Matthias; Santoni, Francesco; Guha, Subhajit; Fraschke, Mirko; Hamoumou, Philippe; Gautier, Brice; Perez, Eduardo; Walczyk, Christian; Wenger, Christian; Di Carlo, Aldo; Alff, Lambert; Schroeder, Thomas

    2016-05-16

    Filament-type HfO2-based RRAM has been considered as one of the most promising candidates for future non-volatile memories. Further improvement of the stability, particularly at the "OFF" state, of such devices is mainly hindered by resistance variation induced by the uncontrolled oxygen vacancies distribution and filament growth in HfO2 films. We report highly stable endurance of TiN/Ti/HfO2/Si-tip RRAM devices using a CMOS compatible nanotip method. Simulations indicate that the nanotip bottom electrode provides a local confinement for the electrical field and ionic current density; thus a nano-confinement for the oxygen vacancy distribution and nano-filament location is created by this approach. Conductive atomic force microscopy measurements confirm that the filaments form only on the nanotip region. Resistance switching by using pulses shows highly stable endurance for both ON and OFF modes, thanks to the geometric confinement of the conductive path and filament only above the nanotip. This nano-engineering approach opens a new pathway to realize forming-free RRAM devices with improved stability and reliability.

  4. Structural Phase Transition Effect on Resistive Switching Behavior of MoS2 -Polyvinylpyrrolidone Nanocomposites Films for Flexible Memory Devices.

    PubMed

    Zhang, Peng; Gao, Cunxu; Xu, Benhua; Qi, Lin; Jiang, Changjun; Gao, Meizhen; Xue, Desheng

    2016-04-01

    The 2H phase and 1T phase coexisting in the same molybdenum disulfide (MoS2 ) nanosheets can influence the electronic properties of the materials. The 1T phase of MoS2 is introduced into the 2H-MoS2 nanosheets by two-step hydrothermal synthetic methods. Two types of nonvolatile memory effects, namely write-once read-many times memory and rewritable memory effect, are observed in the flexible memory devices with the configuration of Al/1T@2H-MoS2 -polyvinylpyrrolidone (PVP)/indium tin oxide (ITO)/polyethylene terephthalate (PET) and Al/2H-MoS2 -PVP/ITO/PET, respectively. It is observed that structural phase transition in MoS2 nanosheets plays an important role on the resistive switching behaviors of the MoS2 -based device. It is hoped that our results can offer a general route for the preparation of various promising nanocomposites based on 2D nanosheets of layered transition metal dichalcogenides for fabricating the high performance and flexible nonvolatile memory devices through regulating the phase structure in the 2D nanosheets.

  5. Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance

    PubMed Central

    Niu, Gang; Calka, Pauline; Auf der Maur, Matthias; Santoni, Francesco; Guha, Subhajit; Fraschke, Mirko; Hamoumou, Philippe; Gautier, Brice; Perez, Eduardo; Walczyk, Christian; Wenger, Christian; Di Carlo, Aldo; Alff, Lambert; Schroeder, Thomas

    2016-01-01

    Filament-type HfO2-based RRAM has been considered as one of the most promising candidates for future non-volatile memories. Further improvement of the stability, particularly at the “OFF” state, of such devices is mainly hindered by resistance variation induced by the uncontrolled oxygen vacancies distribution and filament growth in HfO2 films. We report highly stable endurance of TiN/Ti/HfO2/Si-tip RRAM devices using a CMOS compatible nanotip method. Simulations indicate that the nanotip bottom electrode provides a local confinement for the electrical field and ionic current density; thus a nano-confinement for the oxygen vacancy distribution and nano-filament location is created by this approach. Conductive atomic force microscopy measurements confirm that the filaments form only on the nanotip region. Resistance switching by using pulses shows highly stable endurance for both ON and OFF modes, thanks to the geometric confinement of the conductive path and filament only above the nanotip. This nano-engineering approach opens a new pathway to realize forming-free RRAM devices with improved stability and reliability. PMID:27181525

  6. Flexoelectric effect in an in-plane switching (IPS) liquid crystal cell for low-power consumption display devices

    PubMed Central

    Kim, Min Su; Bos, Philip J.; Kim, Dong-Woo; Yang, Deng-Ke; Lee, Joong Hee; Lee, Seung Hee

    2016-01-01

    Technology of displaying static images in portable displays, advertising panels and price tags pursues significant reduction in power consumption and in product cost. Driving at a low-frequency electric field in fringe-field switching (FFS) mode can be one of the efficient ways to save powers of the recent portable devices, but a serious drop of image-quality, so-called image-flickering, has been found in terms of the coupling of elastic deformation to not only quadratic dielectric effect but linear flexoelectric effect. Despite of the urgent requirement of solving the issue, understanding of such a phenomenon is yet vague. Here, we thoroughly analyze and firstly report the flexoelectric effect in in-plane switching (IPS) liquid crystal cell. The effect takes place on the area above electrodes due to splay and bend deformations of nematic liquid crystal along oblique electric fields, so that the obvious spatial shift of the optical transmittance is experimentally observed and is clearly demonstrated based on the relation between direction of flexoelectric polarization and electric field polarity. In addition, we report that the IPS mode has inherent characteristics to solve the image-flickering issue in the low-power consumption display in terms of the physical property of liquid crystal material and the electrode structure. PMID:27731372

  7. Flexoelectric effect in an in-plane switching (IPS) liquid crystal cell for low-power consumption display devices

    NASA Astrophysics Data System (ADS)

    Kim, Min Su; Bos, Philip J.; Kim, Dong-Woo; Yang, Deng-Ke; Lee, Joong Hee; Lee, Seung Hee

    2016-10-01

    Technology of displaying static images in portable displays, advertising panels and price tags pursues significant reduction in power consumption and in product cost. Driving at a low-frequency electric field in fringe-field switching (FFS) mode can be one of the efficient ways to save powers of the recent portable devices, but a serious drop of image-quality, so-called image-flickering, has been found in terms of the coupling of elastic deformation to not only quadratic dielectric effect but linear flexoelectric effect. Despite of the urgent requirement of solving the issue, understanding of such a phenomenon is yet vague. Here, we thoroughly analyze and firstly report the flexoelectric effect in in-plane switching (IPS) liquid crystal cell. The effect takes place on the area above electrodes due to splay and bend deformations of nematic liquid crystal along oblique electric fields, so that the obvious spatial shift of the optical transmittance is experimentally observed and is clearly demonstrated based on the relation between direction of flexoelectric polarization and electric field polarity. In addition, we report that the IPS mode has inherent characteristics to solve the image-flickering issue in the low-power consumption display in terms of the physical property of liquid crystal material and the electrode structure.

  8. Flexoelectric effect in an in-plane switching (IPS) liquid crystal cell for low-power consumption display devices.

    PubMed

    Kim, Min Su; Bos, Philip J; Kim, Dong-Woo; Yang, Deng-Ke; Lee, Joong Hee; Lee, Seung Hee

    2016-10-12

    Technology of displaying static images in portable displays, advertising panels and price tags pursues significant reduction in power consumption and in product cost. Driving at a low-frequency electric field in fringe-field switching (FFS) mode can be one of the efficient ways to save powers of the recent portable devices, but a serious drop of image-quality, so-called image-flickering, has been found in terms of the coupling of elastic deformation to not only quadratic dielectric effect but linear flexoelectric effect. Despite of the urgent requirement of solving the issue, understanding of such a phenomenon is yet vague. Here, we thoroughly analyze and firstly report the flexoelectric effect in in-plane switching (IPS) liquid crystal cell. The effect takes place on the area above electrodes due to splay and bend deformations of nematic liquid crystal along oblique electric fields, so that the obvious spatial shift of the optical transmittance is experimentally observed and is clearly demonstrated based on the relation between direction of flexoelectric polarization and electric field polarity. In addition, we report that the IPS mode has inherent characteristics to solve the image-flickering issue in the low-power consumption display in terms of the physical property of liquid crystal material and the electrode structure.

  9. Fast magneto-optic switch based on nanosecond pulses

    NASA Astrophysics Data System (ADS)

    Weng, Zi-Hua; Ruan, Jian-Jian; Lin, Shao-Han; Chen, Zhi-Min

    2011-09-01

    The paper studies an all fiber high-speed magneto-optic switch which includes an optical route, a nanosecond pulse generator, and a magnetic field module in order to reduce the switching time of the optical switch in the all optical network. A compact nanosecond pulse generator can be designed based on the special character of the avalanche transistor. The output current pulse of the nanosecond pulse generator is less than 5 ns, while the pulse amplitude is more than 100 V and the pulse width is about 10 to 20 ns, which is able to drive a high-speed magnetic field. A solenoid is used as the magnetic field module, and a bismuth-substituted rare-earth iron garnet single crystal is chosen as the Faraday rotator. By changing the direction of current in the solenoid quickly, the magnetization of the magneto-optic material is reversed, and the optical beam can be rapidly switched. The experimental results indicate that the switching time of the device is about 100 to 400 ns, which can partially meet the demand of the rapid development of the all optical network.

  10. Percolation network in resistive switching devices with the structure of silver/amorphous silicon/p-type silicon

    SciTech Connect

    Liu, Yanhong; Gao, Ping; Bi, Kaifeng; Peng, Wei; Jiang, Xuening; Xu, Hongxia

    2014-01-27

    Conducting pathway of percolation network was identified in resistive switching devices (RSDs) with the structure of silver/amorphous silicon/p-type silicon (Ag/a-Si/p-Si) based on its gradual RESET-process and the stochastic complex impedance spectroscopy characteristics (CIS). The formation of the percolation network is attributed to amounts of nanocrystalline Si particles as well as defect sites embedded in a-Si layer, in which the defect sites supply positions for Ag ions to nucleate and grow. The similar percolation network has been only observed in Ag-Ge-Se based RSD before. This report provides a better understanding for electric properties of RSD based on the percolation network.

  11. All-optical automatic pollen identification: Towards an operational system

    NASA Astrophysics Data System (ADS)

    Crouzy, Benoît; Stella, Michelle; Konzelmann, Thomas; Calpini, Bertrand; Clot, Bernard

    2016-09-01

    We present results from the development and validation campaign of an optical pollen monitoring method based on time-resolved scattering and fluorescence. Focus is first set on supervised learning algorithms for pollen-taxa identification and on the determination of aerosol properties (particle size and shape). The identification capability provides a basis for a pre-operational automatic pollen season monitoring performed in parallel to manual reference measurements (Hirst-type volumetric samplers). Airborne concentrations obtained from the automatic system are compatible with those from the manual method regarding total pollen and the automatic device provides real-time data reliably (one week interruption over five months). In addition, although the calibration dataset still needs to be completed, we are able to follow the grass pollen season. The high sampling from the automatic device allows to go beyond the commonly-presented daily values and we obtain statistically significant hourly concentrations. Finally, we discuss remaining challenges for obtaining an operational automatic monitoring system and how the generic validation environment developed for the present campaign could be used for further tests of automatic pollen monitoring devices.

  12. Switch contact device for interrupting high current, high voltage, AC and DC circuits

    DOEpatents

    Via, Lester C.; Witherspoon, F. Douglas; Ryan, John M.

    2005-01-04

    A high voltage switch contact structure capable of interrupting high voltage, high current AC and DC circuits. The contact structure confines the arc created when contacts open to the thin area between two insulating surfaces in intimate contact. This forces the arc into the shape of a thin sheet which loses heat energy far more rapidly than an arc column having a circular cross-section. These high heat losses require a dramatic increase in the voltage required to maintain the arc, thus extinguishing it when the required voltage exceeds the available voltage. The arc extinguishing process with this invention is not dependent on the occurrence of a current zero crossing and, consequently, is capable of rapidly interrupting both AC and DC circuits. The contact structure achieves its high performance without the use of sulfur hexafluoride.

  13. Spontaneous symmetry breaking in cosmos: the hybrid symmetron as a dark energy switching device

    SciTech Connect

    Bamba, K.; Nojiri, S.; Gannouji, R.; Kamijo, M.; Sami, M. E-mail: gannouji@rs.kagu.tus.ac.jp E-mail: nojiri@phys.nagoya-u.ac.jp

    2013-07-01

    We consider symmetron model in a generalized background with a hope to make it compatible with dark energy. We observe a ''no go'' theorem at least in case of a conformal coupling. Being convinced of symmetron incapability to be dark energy, we try to retain its role for spontaneous symmetry breaking and assign the role of dark energy either to standard quintessence or F(R) theory which are switched on by symmetron field in the symmetry broken phase. The scenario reduces to standard Einstein gravity in the high density region. After the phase transition generated by symmetron field, either the F(R) gravity or the standard quintessence are induced in the low density region. we demonstrate that local gravity constraints and other requirements are satisfied although the model could generate the late-time acceleration of Universe.

  14. Polarity switching of charge transport and thermoelectricity in self-assembled monolayer devices.

    PubMed

    Egger, David A; Rissner, Ferdinand; Zojer, Egbert; Heimel, Georg

    2012-08-22

    Self-assembled monolayer devices can exhibit drastically different charge-transport characteristics and thermoelectric properties despite being composed of isomeric molecules with essentially identical frontier-orbital energies. This is rationalized by the cooperative electrostatic action of local intramolecular dipoles in otherwise nonpolar species, thus revealing new challenges but also new opportunities for the targeted design of functional building blocks in future nanoelectronics.

  15. Remote switch actuator

    DOEpatents

    Haas, Edwin Gerard; Beauman, Ronald; Palo, Jr., Stefan

    2013-01-29

    The invention provides a device and method for actuating electrical switches remotely. The device is removably attached to the switch and is actuated through the transfer of a user's force. The user is able to remain physically removed from the switch site obviating need for protective equipment. The device and method allow rapid, safe actuation of high-voltage or high-current carrying electrical switches or circuit breakers.

  16. Linear conversion of pressure into concentration, rapid switching of concentration, and generation of linear ramps of concentration in a microfluidic device.

    PubMed

    Adler, Micha; Groisman, Alex

    2012-06-01

    Mixing of liquids to produce solutions with different concentrations is one of the basic functionalities of microfluidic devices. Generation of specific temporal patterns of concentration in microfluidic devices is an important technique to study responses of cells and model organisms to variations in the chemical composition of their environment. Here, we present a simple microfluidic network that linearly converts pressure at an inlet into concentration of a soluble reagent in an observation region and also enables independent concurrent linear control of concentrations of two reagents. The microfluidic device has an integrated mixer channel with chaotic three-dimensional flow that facilitates rapid switching of concentrations in a continuous range. A simple pneumatic setup generating linear ramps of pressure is used to produce smooth linear ramps and triangular waves of concentration with different slopes. The use of chaotic vs. laminar mixers is discussed in the context of microfluidic devices providing rapid switching and generating temporal waves of concentration.

  17. Role of interfacial layer on complementary resistive switching in the TiN/HfO{sub x}/TiN resistive memory device

    SciTech Connect

    Zhang, H. Z.; Ang, D. S. Gu, C. J.; Yew, K. S.; Wang, X. P.; Lo, G. Q.

    2014-12-01

    The role of the bottom interfacial layer (IL) in enabling stable complementary resistive switching (CRS) in the TiN/HfO{sub x}/IL/TiN resistive memory device is revealed. Stable CRS is obtained for the TiN/HfO{sub x}/IL/TiN device, where a bottom IL comprising Hf and Ti sub-oxides resulted from the oxidation of TiN during the initial stages of atomic-layer deposition of HfO{sub x} layer. In the TiN/HfO{sub x}/Pt device, where formation of the bottom IL is suppressed by the inert Pt metal, no CRS is observed. Oxygen-ion exchange between IL and the conductive path in HfO{sub x} layer is proposed to have caused the complementary bipolar switching behavior observed in the TiN/HfO{sub x}/IL/TiN device.

  18. Origin of multi-level switching and telegraphic noise in organic nanocomposite memory devices

    PubMed Central

    Song, Younggul; Jeong, Hyunhak; Chung, Seungjun; Ahn, Geun Ho; Kim, Tae-Young; Jang, Jingon; Yoo, Daekyoung; Jeong, Heejun; Javey, Ali; Lee, Takhee

    2016-01-01

    The origin of negative differential resistance (NDR) and its derivative intermediate resistive states (IRSs) of nanocomposite memory systems have not been clearly analyzed for the past decade. To address this issue, we investigate the current fluctuations of organic nanocomposite memory devices with NDR and the IRSs under various temperature conditions. The 1/f noise scaling behaviors at various temperature conditions in the IRSs and telegraphic noise in NDR indicate the localized current pathways in the organic nanocomposite layers for each IRS. The clearly observed telegraphic noise with a long characteristic time in NDR at low temperature indicates that the localized current pathways for the IRSs are attributed to trapping/de-trapping at the deep trap levels in NDR. This study will be useful for the development and tuning of multi-bit storable organic nanocomposite memory device systems. PMID:27659298

  19. All-optical flip-flop based on an active Mach Zehnder interferometer with a feedback loop

    NASA Astrophysics Data System (ADS)

    Clavero, R.; Ramos, F.; Martí, J.

    2005-11-01

    A novel architecture for an all-optical flip-flop is validated experimentally. The architecture comprises a single semiconductor optical amplifier based Mach Zehnder interferometer with an external feedback loop. The experimental results show optical bistable operation for a latching device with an on off contrast ratio of 11 dB that employs set and reset pulses of less than 250 pJ, although the energy of these pulses could be greatly reduced by optical integration of the whole device.

  20. Highly improved resistive switching performances of the self-doped Pt/HfO2:Cu/Cu devices by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Liu, Sen; Wang, Wei; Li, QingJiang; Zhao, XiaoLong; Li, Nan; Xu, Hui; Liu, Qi; Liu, Ming

    2016-12-01

    Metal-oxide electrochemical metallization (ECM) memory is a promising candidate for the next generation nonvolatile memory. But this memory suffers from large dispersion of resistive switching parameters due to the intrinsic randomness of the conductive filament. In this work, we have proposed a self-doping approach to improve the resistive switching characteristics. The fabricated Pt/HfO2:Cu/Cu device shows outstanding nonvolatile memory properties, including high uniformity, good endurance, long retention and fast switching speed. The results demonstrate that the self-doping approach is an effective method to improve the metal-oxide ECM memory performances and the self-doped Pt/HfO2:Cu/Cu device has high potentiality for the nonvolatile memory applications in the future.

  1. Complete all-optical processing polarization-based binary logic gates and optical processors.

    PubMed

    Zaghloul, Y A; Zaghloul, A R M

    2006-10-16

    We present a complete all-optical-processing polarization-based binary-logic system, by which any logic gate or processor can be implemented. Following the new polarization-based logic presented in [Opt. Express 14, 7253 (2006)], we develop a new parallel processing technique that allows for the creation of all-optical-processing gates that produce a unique output either logic 1 or 0 only once in a truth table, and those that do not. This representation allows for the implementation of simple unforced OR, AND, XOR, XNOR, inverter, and more importantly NAND and NOR gates that can be used independently to represent any Boolean expression or function. In addition, the concept of a generalized gate is presented which opens the door for reconfigurable optical processors and programmable optical logic gates. Furthermore, the new design is completely compatible with the old one presented in [Opt. Express 14, 7253 (2006)], and with current semiconductor based devices. The gates can be cascaded, where the information is always on the laser beam. The polarization of the beam, and not its intensity, carries the information. The new methodology allows for the creation of multiple-input-multiple-output processors that implement, by itself, any Boolean function, such as specialized or non-specialized microprocessors. Three all-optical architectures are presented: orthoparallel optical logic architecture for all known and unknown binary gates, singlebranch architecture for only XOR and XNOR gates, and the railroad (RR) architecture for polarization optical processors (POP). All the control inputs are applied simultaneously leading to a single time lag which leads to a very-fast and glitch-immune POP. A simple and easy-to-follow step-by-step algorithm is provided for the POP, and design reduction methodologies are briefly discussed. The algorithm lends itself systematically to software programming and computer-assisted design. As examples, designs of all binary gates, multiple

  2. A polyimide-etalon thin film structure for all-optical high-frequency ultrasound transduction.

    PubMed

    Sheaff, Clay; Ashkenazi, Shai

    2012-10-01

    In this work, we have designed, fabricated, and tested an all-optical ultrasound transducer by integrating a photoabsorptive polyimide thin film into a Fabry-Pérot (etalon) high-frequency receiver. A 5-ns UV pulse was used for thermoelastic ultrasound generation in the polyimide film, and the transmission had a maximum amplitude of 4.3 MPa centered at 27 MHz with a fractional bandwidth of 107%. The device attained a noise-equivalent pressure of 1.3 Pa/√Hz in receive-only mode. When used in pulse-echo mode, the -6-dB upper cutoff frequency of the transmit/receive response reached 47 MHz. Basic imaging capabilities were also investigated by scanning the near-infrared probe beam across the device to create a 2 × 2 mm synthetic aperture. The imaging of targets placed at depths of 1.8 and 5.2 mm yielded estimates of 71 and 145 μm, respectively, for the lateral resolution and 35 and 38 μm, respectively, for the axial resolution. Finally, a design concept for a forward-viewing intravascular imager is presented that entails the coupling of light to a rotating, linear array of optical fibers on top of which are deposited polyimide-etalon transducers. Such a design would allow for a flexible and compact high-resolution imager well-suited for intravascular applications, such as guidance of treatment in the case of chronic total occlusion.

  3. Cost effective all-optical fractional OFDM receiver using an arrayed waveguide grating

    NASA Astrophysics Data System (ADS)

    Nagashima, T.; Cincotti, G.; Murakawa, T.; Shimizu, S.; Hasegawa, M.; Hattori, K.; Okuno, M.; Mino, S.; Himeno, A.; Wada, N.; Uenohara, H.; Konishi, T.

    2016-12-01

    We experimentally demonstrate the feasibility of implementing a cost effective all-optical fractional orthogonal frequency division multiplexing (AO-FrOFDM) receiver using an arrayed waveguide grating (AWG). The all-optical fractional Fourier transform at the receiver is implemented by modifying the second slab coupler from a conventional all-optical discrete Fourier transform AWG. The open eye diagrams obtained from the experimental results indicate that 12 × 10 Gbit/s DBPSK AO-FrOFDM signals were successfully demultiplexed.

  4. All-optical packet routing scheme for optical label-swapping networks

    NASA Astrophysics Data System (ADS)

    Clavero, R.; Martínez, J. M.; Ramos, F.; Martí, J.

    2004-09-01

    A novel scheme for all-optical label reading and packet routing is proposed. The architecture is comprised of all-optical logic XOR gates and all-optical flip-flops based on single Mach-Zehnder interferometers incorporating semiconductor optical amplifiers (SOA-MZIs). The simulation results show that a very small penalty (less than 0.45 dB) for 10 Gbit/s packet processing can be achieved.

  5. 49 CFR 213.235 - Inspection of switches, track crossings, and lift rail assemblies or other transition devices on...

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 49 Transportation 4 2014-10-01 2014-10-01 false Inspection of switches, track crossings, and lift... TRANSPORTATION TRACK SAFETY STANDARDS Inspection § 213.235 Inspection of switches, track crossings, and lift rail... section, each switch, turnout, track crossing, and moveable bridge lift rail assembly or other...

  6. 49 CFR 213.235 - Inspection of switches, track crossings, and lift rail assemblies or other transition devices on...

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 49 Transportation 4 2013-10-01 2013-10-01 false Inspection of switches, track crossings, and lift... TRANSPORTATION TRACK SAFETY STANDARDS Inspection § 213.235 Inspection of switches, track crossings, and lift rail... section, each switch, turnout, track crossing, and moveable bridge lift rail assembly or other...

  7. 49 CFR 213.235 - Inspection of switches, track crossings, and lift rail assemblies or other transition devices on...

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 49 Transportation 4 2012-10-01 2012-10-01 false Inspection of switches, track crossings, and lift... TRANSPORTATION TRACK SAFETY STANDARDS Inspection § 213.235 Inspection of switches, track crossings, and lift rail... section, each switch, turnout, track crossing, and moveable bridge lift rail assembly or other...

  8. 49 CFR 213.235 - Inspection of switches, track crossings, and lift rail assemblies or other transition devices on...

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 49 Transportation 4 2011-10-01 2011-10-01 false Inspection of switches, track crossings, and lift... TRANSPORTATION TRACK SAFETY STANDARDS Inspection § 213.235 Inspection of switches, track crossings, and lift rail... section, each switch, turnout, track crossing, and moveable bridge lift rail assembly or other...

  9. 49 CFR 213.235 - Inspection of switches, track crossings, and lift rail assemblies or other transition devices on...

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 49 Transportation 4 2010-10-01 2010-10-01 false Inspection of switches, track crossings, and lift... TRANSPORTATION TRACK SAFETY STANDARDS Inspection § 213.235 Inspection of switches, track crossings, and lift rail... section, each switch, turnout, track crossing, and moveable bridge lift rail assembly or other...

  10. A simple device unit consisting of all NiO storage and switch elements for multilevel terabit nonvolatile random access memory.

    PubMed

    Lee, Myoung-Jae; Ahn, Seung-Eon; Lee, Chang Bum; Kim, Chang-Jung; Jeon, Sanghun; Chung, U-In; Yoo, In-Kyeong; Park, Gyeong-Su; Han, Seungwu; Hwang, In Rok; Park, Bae-Ho

    2011-11-01

    Present charge-based silicon memories are unlikely to reach terabit densities because of scaling limits. As the feature size of memory shrinks to just tens of nanometers, there is insufficient volume available to store charge. Also, process temperatures higher than 800 °C make silicon incompatible with three-dimensional (3D) stacking structures. Here we present a device unit consisting of all NiO storage and switch elements for multilevel terabit nonvolatile random access memory using resistance switching. It is demonstrated that NiO films are scalable to around 30 nm and compatible with multilevel cell technology. The device unit can be a building block for 3D stacking structure because of its simple structure and constituent, high performance, and process temperature lower than 300 °C. Memory resistance switching of NiO storage element is accompanied by an increase in density of grain boundary while threshold resistance switching of NiO switch element is controlled by current flowing through NiO film.

  11. Sub-nanosecond threshold-switching dynamics and set process of In3SbTe2 phase-change memory devices

    NASA Astrophysics Data System (ADS)

    Pandey, Shivendra Kumar; Manivannan, Anbarasu

    2016-06-01

    Phase-change materials show promising features for high-speed, non-volatile, random access memory, however achieving a fast electrical switching is a key challenge. We report here, the dependence of electrical switching dynamics including transient parameters such as delay time, switching time, etc., on the applied voltage and the set process of In3SbTe2 phase-change memory devices at the picosecond (ps) timescale. These devices are found to exhibit threshold-switching at a critical voltage called threshold-voltage, VT of 1.9 ± 0.1 V, having a delay time of 25 ns. Further, the delay time decreases exponentially to a remarkably smaller value, as short as 300 ± 50 ps upon increasing the applied voltage up to 1.1VT. Furthermore, we demonstrate a rapid phase-change behavior from amorphous (˜10 MΩ) to poly-crystalline (˜10 kΩ) phase using time-resolved measurements revealing an ultrafast set process, which is primarily initiated by the threshold-switching process within 550 ps for an applied voltage pulse with a pulse-width of 1.5 ns and an amplitude of 2.3 V.

  12. Low programming voltage resistive switching in reactive metal/polycrystalline Pr 0.7Ca 0.3MnO 3 devices

    NASA Astrophysics Data System (ADS)

    Liu, Xinjun; Biju, Kuyyadi P.; Bourim, El Mostafa; Park, Sangsu; Lee, Wootae; Shin, Jungho; Hwang, Hyunsang

    2010-12-01

    The resistive switching (RS) characteristics of Pt/Pr 0.7Ca 0.3MnO 3 (PCMO)/W devices with a submicron via-hole structure are investigated. Reproducible and stable switching behavior was achieved in voltage sweeping cycles, while the resistance change was more than two orders of magnitude. No forming process was required to induce the RS. Detailed current density-voltage analysis suggest that the oxidation and reduction reaction of an interfacial WO x layer by electrochemical migration of oxygen between the W bottom electrode and the PCMO layer plays a crucial role in the RS of the Pt/PCMO/W structures Furthermore, the relatively low programming voltage ( ±1.5 V), which is significantly less than the values previously reported in chemically reactive metal/PCMO devices, might be ascribed to the thermal-assisted RS and the unique properties of W metal and its oxides in nano-scale devices.

  13. Examination into the maximum rotational frequency for an in-plane switched active waveplate device

    NASA Astrophysics Data System (ADS)

    Davidson, A. J.; Elston, S. J.; Raynes, E. P.

    2005-05-01

    An examination of an active waveplate device using a one-dimensional model, giving numerical and analytical results, is presented. The model calculates the director and twist configuration by minimizing the free energy of the system with simple homeotropic boundary conditions. The effect of varying the in-plane electric field in both magnitude and direction is examined, and it is shown that the twist through the cell is constant in time as the field is rotated. As the electric field is rotated, the director field lags behind by an angle which increases as the frequency of the electric field rotation increases. When this angle reaches approximately π/4 the director field no longer follows the electric field in a uniform way. Using mathematical analysis it is shown that the conditions on which the director profile will fail to follow the rotating electric field depend on the frequency of electric field rotation, the magnitude of the electric field, the dielectric anisotropy and the viscosity of the liquid crystal.

  14. Graphene photonics for resonator-enhanced electro-optic devices and all-optical interactions

    DOEpatents

    Englund, Dirk R.; Gan, Xuetao

    2017-03-21

    Techniques for coupling light into graphene using a planar photonic crystal having a resonant cavity characterized by a mode volume and a quality factor and at least one graphene layer positioned in proximity to the planar photonic crystal to at least partially overlap with an evanescent field of the resonant cavity. At least one mode of the resonant cavity can couple into the graphene layer via evanescent coupling. The optical properties of the graphene layer can be controlled, and characteristics of the graphene-cavity system can be detected. Coupling light into graphene can include electro-optic modulation of light, photodetection, saturable absorption, bistability, and autocorrelation.

  15. Recent Advances in Photonic Devices for Optical Computing and the Role of Nonlinear Optics-Part II

    NASA Technical Reports Server (NTRS)

    Abdeldayem, Hossin; Frazier, Donald O.; Witherow, William K.; Banks, Curtis E.; Paley, Mark S.

    2007-01-01

    The twentieth century has been the era of semiconductor materials and electronic technology while this millennium is expected to be the age of photonic materials and all-optical technology. Optical technology has led to countless optical devices that have become indispensable in our daily lives in storage area networks, parallel processing, optical switches, all-optical data networks, holographic storage devices, and biometric devices at airports. This chapters intends to bring some awareness to the state-of-the-art of optical technologies, which have potential for optical computing and demonstrate the role of nonlinear optics in many of these components. Our intent, in this Chapter, is to present an overview of the current status of optical computing, and a brief evaluation of the recent advances and performance of the following key components necessary to build an optical computing system: all-optical logic gates, adders, optical processors, optical storage, holographic storage, optical interconnects, spatial light modulators and optical materials.

  16. The effect of oxygen vacancies on the electrical properties of TiO2-x Re-RAM switching devices

    NASA Astrophysics Data System (ADS)

    Benkraouda, Maamar

    2014-03-01

    The main goal of this work is to contribute toward an accurate determination of the electronic properties of Resistance random access memory (Re-RAM) using the density functional theory, which is the current state of the art method that employs high accuracy, it can treat a few hundred atoms on medium sized PC. All the fundamental properties are studied as a function of the mole fraction. The density of states arising from vacancy distribution, the electron transport and formation energy are analyzed. Using controllable mole fraction, various intermediate resistance states are induced. Oxygen vacancy has a considerable effect on the electrical properties of most transition metal oxides such as TiOx Re-RAM devices. The presence of oxygen vacancies is linked to the on-state conduction and resistance switching mechanism. Hydrogen is a ubiquitous impurity in most semiconductors, insertion of hydrogen atoms will remove some of defect states which were induced by oxygen vacancies; this will obviously have an effect on the conductive path, because hydrogen in the vacancy site results in the rupture of conductive channel by localizing electrons, the conductivity may decrease in this case.

  17. Experimental evidence of negative quantum capacitance in topological insulator for sub-60-mV/decade steep switching device

    NASA Astrophysics Data System (ADS)

    Choi, H.; Lee, H.; Park, J.; Yu, H.-Y.; Kim, T. G.; Shin, C.

    2016-11-01

    As a three-dimensional topological insulator (TI), bismuth telluride (Bi2Te3) has two-dimensional electron gas on its surface where negative quantum capacitance (NQC) can exist at a specific biasing condition. In order to experimentally confirm NQC in a TI, a metal-insulator-semiconductor (MIS) capacitor (i.e., metal-Bi2Te3-SiO2-silicon) is fabricated. The capacitance-voltage measurement of the MIS capacitor at 300 K shows that as the depletion capacitance in silicon decreases, the total capacitance of the MIS capacitor, which consists of two capacitors connected in series (i.e., insulator capacitor and depletion capacitor), increases in the depletion region at a frequency of 50 kHz. The amplified capacitance indicates the existence of NQC on the surface of the TI, and it originates from the strongly correlated electron system. The NQC of the TI opens avenues for sub-60-mV/decade steep switching silicon devices.

  18. Fabrication of graphene-nanoflake/poly(4-vinylphenol) polymer nanocomposite thin film by electrohydrodynamic atomization and its application as flexible resistive switching device

    NASA Astrophysics Data System (ADS)

    Choi, Kyung Hyun; Ali, Junaid; Na, Kyoung-Hoan

    2015-10-01

    This paper describes synthesis of graphene/poly(4-vinylphenol) (PVP) nanocomposite and deposition of thin film by electrohydrodynamic atomization (EHDA) for fabrication flexible resistive switching device. EHDA technique proved its viability for thin film deposition after surface morphology analyses by field emission scanning electron microscope (FESEM) and non-destructive 3D Nano-profilometry, as the deposited films were, devoid of abnormalities. The commercially available graphene micro-flakes were exfoliated and broken down to ultra-small (20 nm-200 nm) nano-flakes by ultra-sonication in presence of N-methyl-pyrrolidone (NMP). These graphene nanoflakes with PVP nanocomposite, were successfully deposited as thin films (thickness ~140±7 nm, Ra=2.59 nm) on indium-tin-oxide (ITO) coated polyethylene terephthalate (PET) substrate. Transmittance data revealed that thin films are up to ~87% transparent in visible and NIR region. Resistive switching behaviour of graphene/PVP nanocomposite thin film was studied by using the nanocomposite as active layer in Ag/active layer/ITO sandwich structure. The resistive switching devices thus fabricated, showed characteristic OFF to ON (high resistance to low resistance) transition at low voltages, when operated between ±3 V, characterized at 10 nA compliance currents. The devices fabricated by this approach exhibited a stable room temperature, low power current-voltage hysteresis and well over 1 h retentivity, and ROFF/RON≈35:1. The device showed stable flexibility up to a minimum bending diameter of 1.8 cm.

  19. System tolerance of all-optical sampling OFDM using AWG discrete Fourier transform.

    PubMed

    Lim, Seong-Jin; Rhee, June-Koo Kevin

    2011-07-04

    The fundamental-mode arrayed waveguide grating (AWG) for all-optical discrete Fourier transformer (DFT) shows significant feasibility in the system tolerance of all-optical sampling orthogonal frequency division multiplexing (AOS-OFDM) systems. We discuss the system tolerance of AWG-based DFT designs for 100/160Gbps OFDM transmission system in comparison with coupler-based DFT designs.

  20. All-optical signal processing at 10 GHz using a photonic crystal molecule

    SciTech Connect

    Combrié, Sylvain; Lehoucq, Gaëlle; Junay, Alexandra; De Rossi, Alfredo; Malaguti, Stefania; Bellanca, Gaetano; Trillo, Stefano; Ménager, Loic; Peter Reithmaier, Johann

    2013-11-04

    We report on 10 GHz operation of an all-optical gate based on an Indium Phosphide Photonic Crystal Molecule. Wavelength conversion and all-optical mixing of microwave signals are demonstrated using the 2 mW output of a mode locked diode laser. The spectral separation of the optical pump and signal is crucial in suppressing optical cross-talk.

  1. Investigating the origins of high multilevel resistive switching in forming free Ti/TiO2-x-based memory devices through experiments and simulations

    NASA Astrophysics Data System (ADS)

    Bousoulas, P.; Giannopoulos, I.; Asenov, P.; Karageorgiou, I.; Tsoukalas, D.

    2017-03-01

    Although multilevel capability is probably the most important property of resistive random access memory (RRAM) technology, it is vulnerable to reliability issues due to the stochastic nature of conducting filament (CF) creation. As a result, the various resistance states cannot be clearly distinguished, which leads to memory capacity failure. In this work, due to the gradual resistance switching pattern of TiO2-x-based RRAM devices, we demonstrate at least six resistance states with distinct memory margin and promising temporal variability. It is shown that the formation of small CFs with high density of oxygen vacancies enhances the uniformity of the switching characteristics in spite of the random nature of the switching effect. Insight into the origin of the gradual resistance modulation mechanisms is gained by the application of a trap-assisted-tunneling model together with numerical simulations of the filament formation physical processes.

  2. Study of the switching rate of gas-discharge devices based on the open discharge with counter-propagating electron beams

    SciTech Connect

    Bokhan, P. A.; Gugin, P. P.; Lavrukhin, M. A.; Zakrevsky, Dm. E.

    2015-06-15

    The switching rate of gas-discharge devices “kivotrons” based on the open discharge with counter-propagating electron beams has been experimentally studied. Structures with 2-cm{sup 2} overall cathode area were examined. The switching time was found to show a monotonic decrease with increasing the working-gas helium pressure and with increasing the voltage across the discharge gap at breakdown. The minimum switching time was found to be ∼240 ps at 17 kV voltage, and the maximum rate of electric-current rise limited by the discharge-circuit inductance was 3 × 10{sup 12 }A/s.

  3. Ultrafast dynamic switching between two lasing states in quantum dot lasers

    NASA Astrophysics Data System (ADS)

    Tykalewicz, Boguslaw; Goulding, David; Hegarty, Stephen P.; Huyet, Guillaume; Viktorov, Evgeny A.; Kelleher, Bryan

    2015-03-01

    The unique carrier processes in quantum dot lasers mean that lasing can be achieved at the ground state (GS) transition wavelength or at the excited state (ES) transmission wavelength or indeed simultaneously at both wavelengths. The details depend on the device characteristics and control parameters such as the pumping current and temperature. When the lasing is from the ES only one can induce all-optical switching between the two states via optical injection into the GS. The high damping of the relaxation oscillations in these devices allows for very fast switching times, with sub-nanosecond transitions easily obtained. Such ultrafast switching times are vastly superior to those obtained with conventional semiconductor lasers and make these devices very attractive for all-optical switching applications. The interplay of the two states leads to a new dynamic regime. Near the boundary of stable locking for the injected GS, deep GS intensity dropouts are observed. Further, each dropout in the GS coincides with a burst in the ES output.

  4. Voltage-controlled low-energy switching of nanomagnets through Ruderman-Kittel-Kasuya-Yosida interactions for magnetoelectric device applications

    NASA Astrophysics Data System (ADS)

    Ghosh, Bahniman; Dey, Rik; Register, Leonard F.; Banerjee, Sanjay K.

    2016-07-01

    In this article, we consider through simulation low-energy switching of nanomagnets via electrostatically gated inter-magnet Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions on the surface of three-dimensional topological insulators, for possible memory and nonvolatile logic applications. We model the possibility and dynamics of RKKY-based switching of one nanomagnet by coupling to one or more nanomagnets of set orientation. Potential applications to both memory and nonvolatile logic are illustrated. Sub-attojoule switching energies, far below conventional spin transfer torque (STT)-based memories and even below CMOS logic appear possible. Switching times on the order of a few nanoseconds, comparable to times for STT switching, are estimated for ferromagnetic nanomagnets, but the approach also appears compatible with the use of antiferromagnets which may allow for faster switching.

  5. A novel all-optical label processing for OPS networks based on multiple OOC sequences from multiple-groups OOC

    NASA Astrophysics Data System (ADS)

    Qiu, Kun; Zhang, Chongfu; Ling, Yun; Wang, Yibo

    2007-11-01

    This paper proposes an all-optical label processing scheme using multiple optical orthogonal codes sequences (MOOCS) for optical packet switching (OPS) (MOOCS-OPS) networks, for the first time to the best of our knowledge. In this scheme, the multiple optical orthogonal codes (MOOC) from multiple-groups optical orthogonal codes (MGOOC) are permuted and combined to obtain the MOOCS for the optical labels, which are used to effectively enlarge the capacity of available optical codes for optical labels. The optical label processing (OLP) schemes are reviewed and analyzed, the principles of MOOCS-based optical labels for OPS networks are given, and analyzed, then the MOOCS-OPS topology and the key realization units of the MOOCS-based optical label packets are studied in detail, respectively. The performances of this novel all-optical label processing technology are analyzed, the corresponding simulation is performed. These analysis and results show that the proposed scheme can overcome the lack of available optical orthogonal codes (OOC)-based optical labels due to the limited number of single OOC for optical label with the short code length, and indicate that the MOOCS-OPS scheme is feasible.

  6. Fast, high-fidelity, all-optical and dynamically-controlled polarization gate using room-temperature atomic vapor

    SciTech Connect

    Li, Runbing; Zhu, Chengjie; Deng, L.; Hagley, E. W.

    2014-10-20

    We demonstrate a fast, all-optical polarization gate in a room-temperature atomic medium. Using a Polarization-Selective-Kerr-Phase-Shift (PSKPS) technique, we selectively write a π phase shift to one circularly-polarized component of a linearly-polarized input signal field. The output signal field maintains its original strength but acquires a 90° linear polarization rotation, demonstrating fast, high-fidelity, dynamically-controlled polarization gate operation. The intensity of the polarization-switching field used in this PKSPK-based polarization gate operation is only 2 mW/cm{sup 2}, which would be equivalent to 0.5 nW of light power (λ = 800 nm) confined in a typical commercial photonic hollow-core fiber. This development opens a realm of possibilities for potential future extremely low light level telecommunication and information processing systems.

  7. Investigation of all-optical gain clamped erbium-doped amplifier in the presence of variable burst traffic

    NASA Astrophysics Data System (ADS)

    Zannin, M.; Mangeni, S.; Taccheo, S.; Ennser, K.; Barlet, P.; Careglio, D.

    2011-03-01

    Optical gain clamping is an all-optical method to control the gain of optical amplifiers. Recent results show that this technique is very robust and reduces impairments in amplification of typical traffic from optical burst (and packets) switching networks, where the traffic profile is very dynamic. Nevertheless, recent results have also shown that interplay between the characteristics of the optical gain clamping optical amplifier (OGC-OA) and particular traffic profiles may induce chaotic behavior caused by resonance in the OGC-OA lasing cavity. The aim of this investigation is to assess the impact of burst duration and inter-arrival time on these chaotic behavior cases. The investigation shows that the resonating frequency in which chaotic variation of the OGC-OA gain occurs is shifted - and even reduced - when the burst duration and inter-arrival time are changed. For this investigation, continuous trains of bursts were used, with fixed burst generation frequency throughout each case considered.

  8. Flexible resistive switching device based on poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)/poly(4-vinylphenol) (PVP) composite and methyl red heterojunction

    NASA Astrophysics Data System (ADS)

    Hassan, Gul; Ali, Shawkat; Bae, Jinho; Lee, Chong Hyun

    2017-04-01

    To obtain a desired performance of non-volatile memory applications, heterojunction-based resistive switching devices have tremendous attractions. In this paper, we demonstrate resistive switching characteristics for heterojunction of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)/poly(4-vinylphenol) (PVP) composite and methyl red sandwiched in between bottom and top silver (Ag) electrodes. The proposed heterojunction layers are fabricated through spin coater at 3000 rpm for 60 s each, and the Ag electrodes are deposited through a commercialized inkjet printer DMP-3000 on polyethyleneterephthalate (PET) substrate. To verify the proposed device, the resistive switching on dual polarity voltage of ±10.2 V is measured over more than 500 endurance cycles. The paper also presents an R off/ R on ratio which can adjust through an active layer's area and a blending ratio of the PEDOT:PSS and PVP. By applying the area of 100 μm2 and the blending ratio of 3:1, we achieve the higher R off/ R on ratio of 121, and its high resistance state (HRS) and low resistance state (LRS) are observed as 3000 kΩ and 24.7 kΩ, respectively. To maintain a long retention time, the device is encapsulated with PDMS, which changes a little variations of 52 Ω for HRS 498 Ω for LRS over 60 days. For the flexible realization to be utilized in wearable applications, it can be easily applied on a plastic substrate using printed technologies.

  9. Influence of Thermal Annealing Treatment on Bipolar Switching Properties of Vanadium Oxide Thin-Film Resistance Random-Access Memory Devices

    NASA Astrophysics Data System (ADS)

    Chen, Kai-Huang; Cheng, Chien-Min; Kao, Ming-Cheng; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Wu, Sean; Su, Feng-Yi

    2017-04-01

    The bipolar switching properties and electrical conduction mechanism of vanadium oxide thin-film resistive random-access memory (RRAM) devices obtained using a rapid thermal annealing (RTA) process have been investigated in high-resistive status/low-resistive status (HRS/LRS) and are discussed herein. In addition, the resistance switching properties and quality improvement of the vanadium oxide thin-film RRAM devices were measured by x-ray diffraction (XRD) analysis, x-ray photoelectron spectrometry (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), and current-voltage ( I- V) measurements. The activation energy of the hopping conduction mechanism in the devices was investigated based on Arrhenius plots in HRS and LRS. The hopping conduction distance and activation energy barrier were obtained as 12 nm and 45 meV, respectively. The thermal annealing process is recognized as a candidate method for fabrication of thin-film RRAM devices, being compatible with integrated circuit technology for nonvolatile memory devices.

  10. Influence of Thermal Annealing Treatment on Bipolar Switching Properties of Vanadium Oxide Thin-Film Resistance Random-Access Memory Devices

    NASA Astrophysics Data System (ADS)

    Chen, Kai-Huang; Cheng, Chien-Min; Kao, Ming-Cheng; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Wu, Sean; Su, Feng-Yi

    2016-12-01

    The bipolar switching properties and electrical conduction mechanism of vanadium oxide thin-film resistive random-access memory (RRAM) devices obtained using a rapid thermal annealing (RTA) process have been investigated in high-resistive status/low-resistive status (HRS/LRS) and are discussed herein. In addition, the resistance switching properties and quality improvement of the vanadium oxide thin-film RRAM devices were measured by x-ray diffraction (XRD) analysis, x-ray photoelectron spectrometry (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), and current-voltage (I-V) measurements. The activation energy of the hopping conduction mechanism in the devices was investigated based on Arrhenius plots in HRS and LRS. The hopping conduction distance and activation energy barrier were obtained as 12 nm and 45 meV, respectively. The thermal annealing process is recognized as a candidate method for fabrication of thin-film RRAM devices, being compatible with integrated circuit technology for nonvolatile memory devices.

  11. Harnessing mode-selective nonlinear optics for on-chip multi-channel all-optical signal processing

    NASA Astrophysics Data System (ADS)

    Ma, Ming; Chen, Lawrence R.

    2016-11-01

    All-optical signal processing based on nonlinear optical effects allows for the realization of important functions in telecommunications including wavelength conversion, optical multiplexing/demultiplexing, Fourier transformation, and regeneration, amongst others, on ultrafast time scales to support high data rate transmission. In integrated photonic subsystems, the majority of all-optical signal processing systems demonstrated to date typically process only a single channel at a time or perform a single processing function, which imposes a serious limitation on the functionality of integrated solutions. Here, we demonstrate how nonlinear optical effects can be harnessed in a mode-selective manner to perform simultaneous multi-channel (two) and multi-functional optical signal processing (i.e., regenerative wavelength conversion) in an integrated silicon photonic device. This approach, which can be scaled to a higher number of channels, opens up a new degree of freedom for performing a broad range of multi-channel nonlinear optical signal processing functions using a single integrated photonic device.

  12. Nanoscale on-chip all-optical logic parity checker in integrated plasmonic circuits in optical communication range

    PubMed Central

    Wang, Feifan; Gong, Zibo; Hu, Xiaoyong; Yang, Xiaoyu; Yang, Hong; Gong, Qihuang

    2016-01-01

    The nanoscale chip-integrated all-optical logic parity checker is an essential core component for optical computing systems and ultrahigh-speed ultrawide-band information processing chips. Unfortunately, little experimental progress has been made in development of these devices to date because of material bottleneck limitations and a lack of effective realization mechanisms. Here, we report a simple and efficient strategy for direct realization of nanoscale chip-integrated all-optical logic parity checkers in integrated plasmonic circuits in the optical communication range. The proposed parity checker consists of two-level cascaded exclusive-OR (XOR) logic gates that are realized based on the linear interference of surface plasmon polaritons propagating in the plasmonic waveguides. The parity of the number of logic 1s in the incident four-bit logic signals is determined, and the output signal is given the logic state 0 for even parity (and 1 for odd parity). Compared with previous reports, the overall device feature size is reduced by more than two orders of magnitude, while ultralow energy consumption is maintained. This work raises the possibility of realization of large-scale integrated information processing chips based on integrated plasmonic circuits, and also provides a way to overcome the intrinsic limitations of serious surface plasmon polariton losses for on-chip integration applications. PMID:27073154

  13. A reconfigurable all-optical VPN based on XGM effect of SOA in WDM PON

    NASA Astrophysics Data System (ADS)

    Hu, Xiaofeng; Zhang, Liang; Cao, Pan; Wang, Tao; Su, Yikai

    2010-12-01

    We propose and experimentally demonstrate a reconfigurable all-optical VPN scheme enabling intercommunications among different ONUs in a WDM PON. Reconfiguration is realized by dynamically setting wavelength conversion of optical VPN signal using a SOA in the OLT.

  14. 160 Gb/s OFDM transmission utilizing an all-optical symbol generator based on PLC

    NASA Astrophysics Data System (ADS)

    Liang, Xiaojun; Qiao, Yaojun; Li, Wei; Mei, Junyao; Qin, Yi

    2009-11-01

    We demonstrate a 160 Gb/s orthogonal frequency division multiplexing (OFDM) system using an all-optical symbol generator based on planar light circuit (PLC) technology. Excellent bit error rate (BER) is observed after long-distance transmission. The proposed symbol generator fundamentally eliminates the processing speed limits introduced by electronics and is suitable for high integration, making it physically realizable to build high-speed all-optical OFDM systems with a large number of subcarriers.

  15. Magnetic induction tomography using an all-optical ⁸⁷Rb atomic magnetometer.

    PubMed

    Wickenbrock, Arne; Jurgilas, Sarunas; Dow, Albert; Marmugi, Luca; Renzoni, Ferruccio

    2014-11-15

    We demonstrate magnetic induction tomography (MIT) with an all-optical atomic magnetometer. Our instrument creates a conductivity map of conductive objects. Both the shape and size of the imaged samples compare very well with the actual shape and size. Given the potential of all-optical atomic magnetometers for miniaturization and extreme sensitivity, the proof-of-principle presented in this Letter opens up promising avenues in the development of instrumentation for MIT.

  16. Resistive Switching in All-Printed, Flexible and Hybrid MoS2-PVA Nanocomposite based Memristive Device Fabricated by Reverse Offset

    NASA Astrophysics Data System (ADS)

    Rehman, Muhammad Muqeet; Siddiqui, Ghayas Uddin; Gul, Jahan Zeb; Kim, Soo-Wan; Lim, Jong Hwan; Choi, Kyung Hyun

    2016-11-01

    Owing to the increasing interest in the nonvolatile memory devices, resistive switching based on hybrid nanocomposite of a 2D material, molybdenum disulphide (MoS2) and polyvinyl alcohol (PVA) is explored in this work. As a proof of concept, we have demonstrated the fabrication of a memory device with the configuration of PET/Ag/MoS2-PVA/Ag via an all printed, hybrid, and state of the art fabrication approach. Bottom Ag electrodes, active layer of hybrid MoS2-PVA nanocomposite and top Ag electrode are deposited by reverse offset, electrohydrodynamic (EHD) atomization and electrohydrodynamic (EHD) patterning respectively. The fabricated device displayed characteristic bistable, nonvolatile and rewritable resistive switching behavior at a low operating voltage. A decent off/on ratio, high retention time, and large endurance of 1.28 × 102, 105 sec and 1000 voltage sweeps were recorded respectively. Double logarithmic curve satisfy the trap controlled space charge limited current (TCSCLC) model in high resistance state (HRS) and ohmic model in low resistance state (LRS). Bendability test at various bending diameters (50-2 mm) for 1500 cycles was carried out to show the mechanical robustness of fabricated device.

  17. Resistive Switching in All-Printed, Flexible and Hybrid MoS2-PVA Nanocomposite based Memristive Device Fabricated by Reverse Offset

    PubMed Central

    Rehman, Muhammad Muqeet; Siddiqui, Ghayas Uddin; Gul, Jahan Zeb; Kim, Soo-Wan; Lim, Jong Hwan; Choi, Kyung Hyun

    2016-01-01

    Owing to the increasing interest in the nonvolatile memory devices, resistive switching based on hybrid nanocomposite of a 2D material, molybdenum disulphide (MoS2) and polyvinyl alcohol (PVA) is explored in this work. As a proof of concept, we have demonstrated the fabrication of a memory device with the configuration of PET/Ag/MoS2-PVA/Ag via an all printed, hybrid, and state of the art fabrication approach. Bottom Ag electrodes, active layer of hybrid MoS2-PVA nanocomposite and top Ag electrode are deposited by reverse offset, electrohydrodynamic (EHD) atomization and electrohydrodynamic (EHD) patterning respectively. The fabricated device displayed characteristic bistable, nonvolatile and rewritable resistive switching behavior at a low operating voltage. A decent off/on ratio, high retention time, and large endurance of 1.28 × 102, 105 sec and 1000 voltage sweeps were recorded respectively. Double logarithmic curve satisfy the trap controlled space charge limited current (TCSCLC) model in high resistance state (HRS) and ohmic model in low resistance state (LRS). Bendability test at various bending diameters (50-2 mm) for 1500 cycles was carried out to show the mechanical robustness of fabricated device. PMID:27811977

  18. Enhanced contrast ratios and rapid-switching color-changeable devices based on poly(3,4-propylenedioxythiophene) derivative and counterelectrode

    NASA Astrophysics Data System (ADS)

    Xu, Chunye; Tamagawa, Hirohisa; Uchida, Mikio; Taya, Minoru

    2002-07-01

    A large contrast ratio and rapid switching electrochromic(EC) polymer device which consists of laminated two-layer structure between two electrodes was proposed. The new design which only comprises an ITO coated glass electrode, a cathodic poly(3,4-propylenedioxythiophene) derivative (PProDOT-(CH3$2) EC polymer film, a solid electrolyte and an Au-based counterelectrode which replaces anodic EC polymer and ITO electrode. Carbon-based counterelectrode was prepared for comparing with Au-based counterelectrode. Lithography and sputtering were used for Au patterning on glass substrate, while screen printing was used for carbon-based counterelectrode. Covering percentage of Au is less than 20%, in order to keep the electrode high transmittance. We also prepared a solid electrolyte, such as poly(methyl metracrylate)(PMMA) based containing LiClO4 gel electrolyte for solid state applications. A special parafilm was utilized on sealing the assembly device. Color change of high contrast ratio of transmittance (>(Delta) 50% T) of the device is rapidly (0.5-1s) obtained upon applied 2.5V voltage and repeatable (10,000 times). The temperature range under which the switching is stable is wide, -40 degree(s)C 100 degree(s)C. The repeatability of current of EC polymer devices while color change was estimated by electrochemistry.

  19. Optical switch

    DOEpatents

    Reedy, Robert P.

    1987-01-01

    An optical switching device (10) is provided whereby light from a first glass fiber (16) or a second glass fiber (14) may be selectively transmitted into a third glass fiber (18). Each glass fiber is provided with a focusing and collimating lens system (26, 28, 30). In one mode of operation, light from the first glass fiber (16) is reflected by a planar mirror (36) into the third glass fiber (18). In another mode of operation, light from the second glass fiber (14) passes directly into the third glass fiber (18). The planar mirror (36) is attached to a rotatable table (32) which is rotated to provide the optical switching.

  20. High-performance multicasting schemes in optical packet switched networks

    NASA Astrophysics Data System (ADS)

    Ji, Yuefeng; Liu, Xin; Zhang, Jie; Zhang, Min

    2009-11-01

    Current trends in communications indicate that multicasting is becoming increasingly popular and important in networking applications. Since multicasting can be supported more efficiently in optical domain by utilizing the inherent light-splitting capacity of optical devices, such as optical splitters, than by copying data in electronic domain, issues concerning running multicast sessions in the all-optical networks have received much attention in recent years. In this paper, different multicasting schemes and their performance in the Optical Packet Switched networks are investigated, including the parallel mode, serial mode, and hybrid mode multicasting schemes. Computer simulation results show that compared with the parallel-mode and serial-mode multicasting schemes, hybrid-mode multicasting scheme is the best way to deliver multicast sessions in the Optical Packet Switched networks due to its highest performance.

  1. Resistive switching characteristics of Cu/ZnO0.4S0.6/Al devices constructed on plastic substrates.

    PubMed

    Han, Yong; Cho, Kyoungah; Kim, Sangsig

    2012-07-01

    In this study, Cu/ZnO0.4S0.6Al devices are fabricated on plastic substrates using the sputtering method at room temperature. The ratio of O/S in the zinc oxysulfide thin film is confirmed to be 0.4/0.6 from the Auger depth profiling. The Cu/ZnO0.4S0.6/Al devices show unipolar resistive switching behaviors and the ratio of the measured resistance in the low-resistance state (LRS) to that in the high-resistance state (HRS) is above 10(4). The conduction mechanism of the LRS is governed by Ohm's law. On the other hand, in the HRS, the conduction mechanism at low voltages is controlled by Ohm's law, but that at high voltages results from the Poole-Frenkel emission mechanism. The Ohmic and Poole-Frenkel conduction mechanisms observed in the LRS and HRS support the filament model of unipolar resistive switching. The memory characteristics of the Cu/ZnO0.4S0.6/Al devices are retained for 10(4) sec without any change.

  2. Microstructure evolution characteristics induced by oxygen vacancy generation in anatase TiO2 based resistive switching devices

    NASA Astrophysics Data System (ADS)

    Liu, Chen; Gao, Bin; Huang, Peng; Kang, Jinfeng

    2017-03-01

    In this work, first principle calculations are employed to study the microstructure characteristics of the anatase TiO2 resistive switching material associated with the generation of oxygen vacancy (V o) based nanofilaments during the switching process. The calculations indicate that both the magnéli phase Ti4O7 and V o-defect phase of anatase TiO2 may be formed with the generation of oxygen vacancies during the forming and SET processes. Based on the calculations, a new physical insight is proposed to clarify the microstructure evolution characteristics of the anatase TiO2 resistive switching material and the correlation with resistive switching behaviors. During the forming or SET process, the anatase TiO2 is first excited to a transition state with the generation of oxygen vacancies, then fully relaxes to a stable V o-defect state. This V o-defect state may either recover to the original state with the recombination of the oxygen vacancies, which causes the reversible resistive switching behavior, or further transform to a much more stable state—the magnéli phase Ti4O7, through a phase transition process with the generation of many more oxygen vacancies. The phase transition from V o- defective anatase phase to magnéli phase Ti4O7 causes the failure of the resistive switching due to the significantly reduced possibility of the reversible phase transition from the magnéli phase to the anatase phase, compared with the possibility of the recombination from the V o-defective anatase.

  3. Large optical nonlinearity of ITO nanorods for sub-picosecond all-optical modulation of the full-visible spectrum

    PubMed Central

    Guo, Peijun; Schaller, Richard D.; Ocola, Leonidas E.; Diroll, Benjamin T.; Ketterson, John B.; Chang, Robert P. H.

    2016-01-01

    Nonlinear optical responses of materials play a vital role for the development of active nanophotonic and plasmonic devices. Optical nonlinearity induced by intense optical excitation of mobile electrons in metallic nanostructures can provide large-amplitude, dynamic tuning of their electromagnetic response, which is potentially useful for all-optical processing of information and dynamic beam control. Here we report on the sub-picosecond optical nonlinearity of indium tin oxide nanorod arrays (ITO-NRAs) following intraband, on-plasmon-resonance optical pumping, which enables modulation of the full-visible spectrum with large absolute change of transmission, favourable spectral tunability and beam-steering capability. Furthermore, we observe a transient response in the microsecond regime associated with slow lattice cooling, which arises from the large aspect-ratio and low thermal conductivity of ITO-NRAs. Our results demonstrate that all-optical control of light can be achieved by using heavily doped wide-bandgap semiconductors in their transparent regime with speed faster than that of noble metals. PMID:27682836

  4. Energy logistics in an all-optical adder based on a 1D porous silicon photonic crystal

    NASA Astrophysics Data System (ADS)

    Glushko, E. Ya.

    2011-09-01

    The ideology of a photonic crystal resonator covered with optically nonlinear layers is proposed for binary adder and logic gates of various kinds. The all-optical way to transform a physically added sequence of signals into the logical sequence with corresponding shift of digital units is based on the nonlinear band shift effect. In this work, the electromagnetic field structure for optically linear 1D porous silicon photonic crystal is investigated. The optical parameters of a 1D photonic crystal resonator built on layered porous silicon covered with a nonlinear layer are calculated for various nonlinear materials. An approximate design of an all-optical adder based on 1D porous silicon resonator is considered. The adder heating by powered optical pulses and energy distribution inside the device are analyzed and the problem solution with the use of special semitransparent redirecting mirrors is proposed. It was found that from the point of view of heating the R-scheme of signal processing is more optimal.

  5. Fabrication of a novel RF switch device with high performance using In0.4Ga0.6As MOSFET technology

    NASA Astrophysics Data System (ADS)

    Jiahui, Zhou; Hudong, Chang; Xufang, Zhang; Jingzhi, Yang; Guiming, Liu; Haiou, Li; Honggang, Liu

    2016-02-01

    A novel radio frequency (RF) switch device has been successfully fabricated using InGaAs metal-oxide-semiconductor field-effect transistor (MOSFET) technology. The device showed drain saturation currents of 250 mA/mm, a maximum transconductance of 370 mS/mm, a turn-on resistance of 0.72 mω·mm2 and a drain current on-off (Ion/Ioff) ratio of 1 × 106. The maximum handling power of on-state of 533 mW/mm and off-state of 3667 mW/mm is obtained. The proposed In0.4Ga0.6 As MOSFET RF switch showed an insertion loss of less than 1.8 dB and an isolation of better than 20 dB in the frequency range from 0.1 to 7.5 GHz. The lowest insertion loss and the highest isolation can reach 0.27 dB and more than 68 dB respectively. This study demonstrates that the InGaAs MOSFET technology has a great potential for RF switch application. Project supported by the National Natural Science Foundation of China (Nos. 61274077, 61474031), the Guangxi Natural Science Foundation (No. 2013GXNSFGA019003), the Guangxi Department of Education Project (No. 201202ZD041), the Guilin City Technology Bureau (Nos. 20120104-8, 20130107-4), the China Postdoctoral Science Foundation Funded Project (Nos. 2012M521127, 2013T60566), the National Basic Research Program of China (Nos. 2011CBA00605, 2010CB327501), the Innovation Project of GUET Graduate Education (Nos. GDYCSZ201448, GDYCSZ201449), the State key Laboratory of Electronic Thin Films and Integrated Devices, UESTC (No. KFJJ201205), and the Guilin City Science and Technology Development Project (Nos. 20130107-4, 20120104-8).

  6. All-optical virtual private network and ONUs communication in optical OFDM-based PON system.

    PubMed

    Zhang, Chongfu; Huang, Jian; Chen, Chen; Qiu, Kun

    2011-11-21

    We propose and demonstrate a novel scheme, which enables all-optical virtual private network (VPN) and all-optical optical network units (ONUs) inter-communications in optical orthogonal frequency-division multiplexing-based passive optical network (OFDM-PON) system using the subcarrier bands allocation for the first time (to our knowledge). We consider the intra-VPN and inter-VPN communications which correspond to two different cases: VPN communication among ONUs in one group and in different groups. The proposed scheme can provide the enhanced security and a more flexible configuration for VPN users compared to the VPN in WDM-PON or TDM-PON systems. The all-optical VPN and inter-ONU communications at 10-Gbit/s with 16 quadrature amplitude modulation (16 QAM) for the proposed optical OFDM-PON system are demonstrated. These results verify that the proposed scheme is feasible.

  7. Frequency-time coherence for all-optical sampling without optical pulse source

    PubMed Central

    Preußler, Stefan; Raoof Mehrpoor, Gilda; Schneider, Thomas

    2016-01-01

    Sampling is the first step to convert an analogue optical signal into a digital electrical signal. The latter can be further processed and analysed by well-known electrical signal processing methods. Optical pulse sources like mode-locked lasers are commonly incorporated for all-optical sampling, but have several drawbacks. A novel approach for a simple all-optical sampling is to utilise the frequency-time coherence of each signal. The method is based on only using two coupled modulators driven with an electrical sine wave. Since no optical source is required, a simple integration in appropriate platforms, such as Silicon Photonics might be possible. The presented method grants all-optical sampling with electrically tunable bandwidth, repetition rate and time shift. PMID:27687495

  8. Direct generation of all-optical random numbers from optical pulse amplitude chaos.

    PubMed

    Li, Pu; Wang, Yun-Cai; Wang, An-Bang; Yang, Ling-Zhen; Zhang, Ming-Jiang; Zhang, Jian-Zhong

    2012-02-13

    We propose and theoretically demonstrate an all-optical method for directly generating all-optical random numbers from pulse amplitude chaos produced by a mode-locked fiber ring laser. Under an appropriate pump intensity, the mode-locked laser can experience a quasi-periodic route to chaos. Such a chaos consists of a stream of pulses with a fixed repetition frequency but random intensities. In this method, we do not require sampling procedure and external triggered clocks but directly quantize the chaotic pulses stream into random number sequence via an all-optical flip-flop. Moreover, our simulation results show that the pulse amplitude chaos has no periodicity and possesses a highly symmetric distribution of amplitude. Thus, in theory, the obtained random number sequence without post-processing has a high-quality randomness verified by industry-standard statistical tests.

  9. Cascaded all-optical operations in a hybrid integrated 80-Gb/s logic circuit.

    PubMed

    LeGrange, J D; Dinu, M; Sochor, T; Bollond, P; Kasper, A; Cabot, S; Johnson, G S; Kang, I; Grant, A; Kay, J; Jaques, J

    2014-06-02

    We demonstrate logic functionalities in a high-speed all-optical logic circuit based on differential Mach-Zehnder interferometers with semiconductor optical amplifiers as the nonlinear optical elements. The circuit, implemented by hybrid integration of the semiconductor optical amplifiers on a planar lightwave circuit platform fabricated in silica glass, can be flexibly configured to realize a variety of Boolean logic gates. We present both simulations and experimental demonstrations of cascaded all-optical operations for 80-Gb/s on-off keyed data.

  10. All-optical stabilization of a soliton frequency comb in a crystalline microresonator.

    PubMed

    Jost, J D; Lucas, E; Herr, T; Lecaplain, C; Brasch, V; Pfeiffer, M H P; Kippenberg, T J

    2015-10-15

    We demonstrate the all-optical stabilization of a low-noise temporal soliton based microresonator based optical frequency comb in a crystalline resonator via a new technique to control the repetition rate. This is accomplished by thermally heating the microresonator with an additional probe laser coupled to an auxiliary optical resonator mode. The carrier-envelope offset frequency is controlled by stabilizing the pump laser frequency to a reference optical frequency comb. We analyze the stabilization by performing an out-of-loop comparison and measure the overlapping Allan deviation. This all-optical stabilization technique can prove useful as an actuator for self-referenced microresonator frequency combs.

  11. Photonic processing and realization of an all-optical digital comparator based on semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Singh, Simranjit; Kaur, Ramandeep; Kaler, Rajinder Singh

    2015-01-01

    A module of an all-optical 2-bit comparator is analyzed and implemented using semiconductor optical amplifiers (SOAs). By employing SOA-based cross phase modulation, the optical XNOR logic is used to get an A=B output signal, where as AB¯ and A¯B> logics operations are used to realize A>B and Aall-optical high speed networks and computing systems.

  12. Architecture of an all optical de-multiplexer for spatially multiplexed channels

    NASA Astrophysics Data System (ADS)

    Murshid, Syed H.; Finch, Michael F.; Lovell, Gregory L.

    2013-05-01

    Multiple channels of light can propagate through a multimode fiber without interfering with each other and can be independently detected at the output end of the fiber using spatial domain multiplexing (SDM). Each channel forms a separate concentric ring at the output. The typical single pin-diode structure cannot simultaneously detect and demultiplex the multiple channel propagation supported by the SDM architecture. An array of concentric circular pindiodes can be used to simultaneously detect and de-multiplex the SDM signals; however, an all optical solution is generally preferable. This paper presents simple architecture for an all optical SDM de-multiplexer.

  13. Design of an ultracompact low-power all-optical modulator by means of dispersion engineered slow light regime in a photonic crystal Mach-Zehnder interferometer.

    PubMed

    Bakhshi, Sara; Moravvej-Farshi, Mohammad Kazem; Ebnali-Heidari, Majid

    2012-05-10

    We present the design procedure for an ultracompact low-power all-optical modulator based on a dispersion-engineered slow-light regime in a photonic crystal Mach-Zehnder interferometer (PhC MZI), selectively infiltrated by nonlinear optical fluids. The dispersionless slow-light regime enhancing the nonlinearities enabled a 22 μm long PhC MZI to operate as a modulator with an input power as low as 3 mW/μm. Simulations reveal that the switching threshold can be controlled by varying the optofluidic infiltration.

  14. A synaptic device built in one diode-one resistor (1D-1R) architecture with intrinsic SiOx-based resistive switching memory

    NASA Astrophysics Data System (ADS)

    Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Zhou, Fei; Pan, Chih-Hung; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Sze, Simon M.; Lee, Jack C.

    2016-04-01

    We realize a device with biological synaptic behaviors by integrating silicon oxide (SiOx) resistive switching memory with Si diodes to further minimize total synaptic power consumption due to sneak-path currents and demonstrate the capability for spike-induced synaptic behaviors, representing critical milestones for the use of SiO2-based materials in future neuromorphic computing applications. Biological synaptic behaviors such as long-term potentiation, long-term depression, and spike-timing dependent plasticity are demonstrated systemically with comprehensive investigation of spike waveform analyses and represent a potential application for SiOx-based resistive switching materials. The resistive switching SET transition is modeled as hydrogen (proton) release from the (SiH)2 defect to generate the hydrogenbridge defect, and the RESET transition is modeled as an electrochemical reaction (proton capture) that re-forms (SiH)2. The experimental results suggest a simple, robust approach to realize programmable neuromorphic chips compatible with largescale complementary metal-oxide semiconductor manufacturing technology.

  15. Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism

    NASA Astrophysics Data System (ADS)

    Chen, Yiren; Song, Hang; Jiang, Hong; Li, Zhiming; Zhang, Zhiwei; Sun, Xiaojuan; Li, Dabing; Miao, Guoqing

    2014-11-01

    Reproducible bipolar resistive switching characteristics are demonstrated in entire nitride AlN/n-GaN metal-insulator-semiconductor devices. The mechanism involved confirms to trap-controlled space charge limited current theory and can be attributed to the nitrogen vacancies of AlN serving as electron traps that form/rupture electron transport channel by trapping/detrapping electrons. This study will lead to the development of in-situ growth of group-III nitrides by metal-organic chemical vapor deposition as a candidate for next-generation nonvolatile memory device. Moreover, it will be benefit to structure monolithic integrated one-transistor-one-resistor memory with nitride high electron mobility transistors.

  16. Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism

    SciTech Connect

    Chen, Yiren; Song, Hang E-mail: lidb@ciomp.ac.cn; Jiang, Hong; Li, Zhiming; Zhang, Zhiwei; Sun, Xiaojuan; Li, Dabing E-mail: lidb@ciomp.ac.cn; Miao, Guoqing

    2014-11-10

    Reproducible bipolar resistive switching characteristics are demonstrated in entire nitride AlN/n-GaN metal-insulator-semiconductor devices. The mechanism involved confirms to trap-controlled space charge limited current theory and can be attributed to the nitrogen vacancies of AlN serving as electron traps that form/rupture electron transport channel by trapping/detrapping electrons. This study will lead to the development of in-situ growth of group-III nitrides by metal-organic chemical vapor deposition as a candidate for next-generation nonvolatile memory device. Moreover, it will be benefit to structure monolithic integrated one-transistor-one-resistor memory with nitride high electron mobility transistors.

  17. Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices

    SciTech Connect

    Aslam, N.; Rodenbücher, C.; Szot, K.; Waser, R.; Hoffmann-Eifert, S.; Longo, V.; Roozeboom, F.; Kessels, W. M. M.

    2014-08-14

    The resistive switching (RS) properties of strontium titanate (Sr{sub 1+x}Ti{sub 1+y}O{sub 3+(x+2y)}, STO) based metal-oxide-metal structures prepared from industrial compatible processes have been investigated focusing on the effects of composition, microstructure, and device size. Metastable perovskite STO films were prepared on Pt-coated Si substrates utilizing plasma-assisted atomic layer deposition (ALD) from cyclopentadienyl-based metal precursors and oxygen plasma at 350 °C, and a subsequent annealing at 600 °C in nitrogen. Films of 15 nm and 12 nm thickness with three different compositions [Sr]/([Sr] + [Ti]) of 0.57 (Sr-rich STO), 0.50 (stoichiometric STO), and 0.46 (Ti-rich STO) were integrated into Pt/STO/TiN crossbar structures with sizes ranging from 100 μm{sup 2} to 0.01 μm{sup 2}. Nano-structural characterizations revealed a clear effect of the composition of the as-deposited STO films on their crystallization behavior and thus on the final microstructures. Local current maps obtained by local-conductivity atomic force microscopy were in good agreement with local changes of the films' microstructures. Correspondingly, also the initial leakage currents of the Pt/STO/TiN devices were affected by the STO compositions and by the films' microstructures. An electroforming process set the Pt/STO/TiN devices into the ON-state, while the forming voltage decreased with increasing initial leakage current. After a RESET process under opposite voltage has been performed, the Pt/STO/TiN devices showed a stable bipolar RS behavior with non-linear current-voltage characteristics for the high (HRS) and the low (LRS) resistance states. The obtained switching polarity and nearly area independent LRS values agree with a filamentary character of the RS behavior according to the valence change mechanism. The devices of 0.01 μm{sup 2} size with a 12 nm polycrystalline stoichiometric STO film were switched at a current compliance of 50 μA with

  18. All-optical logic gate based on transient grating from disperse red 1 doped organic-inorganic hybrid films with an improved figure of merit

    SciTech Connect

    Gao, Tianxi; Que, Wenxiu Shao, Jinyou; Wang, Yushu

    2015-10-21

    Azobenzene dyes have large refractive index near their main resonance, but the poor figure of merit (FOM) limits their potential for all-optical applications. To improve this situation, disperse red 1 (DR1) molecules were dispersed in a sol-gel germanium/Ormosil organic-inorganic hybrid matrix. Z-scan measurement results showed a good compatibility between the dopant and the matrix, and also, an improved FOM was obtained as compared to the DR1/polymer films reported previously. To demonstrate the all-optical signal processing effect, a cw Nd:YAG laser emitting at 532 nm and a He-Ne laser emitting at 632.8 nm were used as pump and probe beams, respectively. DR1 acts as an initiator of the photo-induced transient holographic grating, which is attributed to the trans-cis-trans photoisomerization. Thus, a three inputs AND all-optical logic gate was achieved by using choppers with different frequencies. The detailed mechanism of operation is discussed. These results indicate that the DR1 doped germanium/Ormosil organic-inorganic hybrid film with an improved FOM has a great potential in all-optical devices around its main resonance.

  19. All optical discrete Fourier transform processor for 100 Gbps OFDM transmission.

    PubMed

    Lee, Kyusang; Thai, Chan T D; Rhee, June-Koo Kevin

    2008-03-17

    Optical orthogonal frequency division multiplex (OFDM) symbol generation by all-optical discrete Fourier transform (DFT) is proposed and investigated for 100-Gbps transmission performance. We discuss a design example for a 4x25Gbps OFDM transmission system and its performance comparison with that for a 100-Gbps single-channel return-to-zero data transmission in an optically amplified system.

  20. Magnetic induction measurements using an all-optical {sup 87}Rb atomic magnetometer

    SciTech Connect

    Wickenbrock, Arne; Tricot, François; Renzoni, Ferruccio

    2013-12-09

    In this work we propose, and experimentally demonstrate, the use of a self-oscillating all-optical atomic magnetometer for magnetic induction measurements. Given the potential for miniaturization of atomic magnetometers, and their extreme sensitivity, the present work shows that atomic magnetometers may play a key role in the development of instrumentation for magnetic induction tomography.

  1. ESR Study of (La,Ba)MnO3/ZnO Nanostructure for Resistive Switching Device

    NASA Astrophysics Data System (ADS)

    Polek, Taras; Semen'ko, Mykhaylo; Endo, Tamio; Nakamura, Yoshinobu; Lotey, Gurmeet Singh; Tovstolytkin, Alexandr

    2017-03-01

    Structure, electric, and resonance properties of (La,Ba)MnO3/ZnO nanostructure grown on SrTiO3 (001) substrate have been investigated. It is found that at room temperature and relatively low voltages (| V |< 0.2 V), the structure shows good rectification behavior with rectification factor near 210. Resistive switching properties are detected after application of higher voltages. Temperature evolution of magnetic phase composition of the sample is analyzed in detail, based on results of electron spin resonance measurements. It is shown that magnetic state below 260 K is characterized by coexistence of ferromagnetic and paramagnetic phases, but no evidence of magnetic phase separation is revealed at higher temperatures. Different driving mechanisms for resistive switching, such as magnetic phase separation and/or electric field-induced migration of oxygen vacancies, are discussed in the context of obtained results.

  2. A novel terahertz device with multi-function of polarization and switch based on phase transition of VO2

    NASA Astrophysics Data System (ADS)

    Gu, Wen-hao; Chang, Sheng-jiang; Fan, Fei

    2016-11-01

    A terahertz (THz) polarizer and switch structure is proposed based on the phase transition of vanadium dioxide (VO2). When VO2 is in the insulation phase, the resonance frequencies of the proposed structure are 1.49 THz and 1.22 THz for the x- and y-polarization, respectively. It can perform as a THz polarizer with extinction ratios of 52.5 dB and 17 dB for the y- and x-polarization, respectively; When VO2 transforms into metallic phase, the resonance frequency for x-polarization wave shifts from 1.49 THz to 1.22 THz, while that remains still for the y-polarization component. It means that the structure can work as a polarization-dependent THz switch with a high extinction ratio of 32 dB.

  3. Development of Process Technologies for High-Performance MOS-Based SiC Power Switching Devices

    DTIC Science & Technology

    2007-08-01

    MOSFETs have fast switching speed and low input- gate current drive requirement, their on-state conduction loss is large, especially for those designed...development of the insulated gate bipolar transistors (IGBTs) [1-3]. IGBTs combine the high input gate impedance of power MOSFETs with the low on-state loss...By making the n- channel and p-channel MOSFETs identical dimensions and same gate oxide thickness, the ratio of the two saturation current at same

  4. Changes in markers of epithelial permeability and inflammation in chronic smokers switching to a nonburning tobacco device (Eclipse).

    PubMed

    Stewart, Judith C; Hyde, Richard W; Boscia, Joseph; Chow, Ming-Yan; O'Mara, Robert E; Perillo, Irene; Pietropaoli, Anthony; Smith, Carr J; Torres, Alfonso; Utell, Mark J; Frampton, Mark W

    2006-12-01

    Eclipse, produced by R. J. Reynolds Tobacco Company, is a potential reduced exposure product (PREP) that heats rather than burns tobacco. We hypothesized that switching to Eclipse would result in relative normalization of pulmonary epithelial permeability, airway inflammation, and blood leukocyte activation in current smokers. We assessed 10 healthy smokers (aged 21-50 years, 19+/-8 pack-years) at baseline and after 2 and 4 weeks of switching to Eclipse, for symptoms, pulmonary function, airway inflammation, lung clearance of (99m)technicium-diethylenetriaminepentaacetic acid, and blood leukocyte activation and production of reactive oxygen species. Values were compared before and after Eclipse use and with those of healthy, lifetime nonsmokers (aged 18-53 years). Compared with baseline values before switching to Eclipse, lung permeability half-time increased from 33+/-3 to 43+/-6 min (p = .017) after 2 weeks and to 44+/-7 min (p = .10) after 4 weeks of Eclipse use. Carboxyhemoglobin levels increased from 5%+/-2% to 7%+/-2% (p<.01) at 4 weeks. Compared with smoking the usual brand of cigarettes, after smoking Eclipse the percentage of natural killer cells, the expression of intercellular adhesion molecule-1 on monocytes, and the expression of CD45RO on T cells showed significant improvement. However, expression of other surface markers, notably CD23 on monocytes, became more abnormal. Production of reactive oxygen species by smokers' neutrophils and monocytes increased further with Eclipse use. We found no significant effects on pulmonary function, cells in induced sputum, or exhaled nitric oxide. Switching to Eclipse reduces alveolar epithelial injury in some smokers but may increase carboxyhemoglobin levels and oxidative stress.

  5. Radiation sensitive solid state switch

    NASA Technical Reports Server (NTRS)

    Hutto, R. J. (Inventor)

    1973-01-01

    A mechanically operable solid state switch suited for use in achieving a variable circuit-switching function is described. This switch is characterized by an annular array of photoresponsive switching devices, disposed in communication with an included source of radiation, and a plurality of interchangeable, mechanically operable interrupter disks. Each disk has a predetermined pattern of transparent and opaque portions. Operative displacement of each disk serves to make and break selected electrical circuits through the photo responsive devices of said array.

  6. Efficient III-Nitride MIS-HEMT devices with high-κ gate dielectric for high-power switching boost converter circuits

    NASA Astrophysics Data System (ADS)

    Mohanbabu, A.; Mohankumar, N.; Godwin Raj, D.; Sarkar, Partha; Saha, Samar K.

    2017-03-01

    The paper reports the results of a systematic theoretical study on efficient recessed-gate, double-heterostructure, and normally-OFF metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs), HfAlOx/AlGaN on Al2O3 substrate. In device architecture, a thin AlGaN layer is used in the AlGaN graded barrier MIS-HEMTs that offers an excellent enhancement-mode device operation with threshold voltage higher than 5.3 V and drain current above 0.64 A/mm along with high on-current/off-current ratio over 107 and subthreshold slope less than 73 mV/dec. In addition, a high OFF-state breakdown voltage of 1200 V is achieved for a device with a gate-to-drain distance and field-plate length of 15 μm and 5.3 μm, respectively at a drain current of 1 mA/mm with a zero gate bias, and the substrate grounded. The numerical device simulation results show that in comparison to a conventional AlGaN/GaN MIS-HEMT of similar design, a graded barrier MIS-HEMT device exhibits a better interface property, remarkable suppression of leakage current, and a significant improvement of breakdown voltage for HfAlOx gate dielectric. Finally, the benefit of HfAlOx graded-barrier AlGaN MIS-HEMTs based switching devices is evaluated on an ultra-low-loss converter circuit.

  7. Characterization of a Broadband All-Optical Ultrasound Transducer—From Optical and Acoustical Properties to Imaging

    PubMed Central

    Hou, Yang; Kim, Jin-Sung; Huang, Sheng-Wen; Ashkenazi, Shai; Guo, L. Jay; O’Donnell, Matthew

    2009-01-01

    A broadband all-optical ultrasound transducer has been designed, fabricated, and evaluated for high-frequency ultrasound imaging. The device consists of a 2-D gold nanostructure imprinted on top of a glass substrate, followed by a 3 μm PDMS layer and a 30 nm gold layer. A laser pulse at the resonance wavelength of the gold nanostructure is focused onto the surface for ultrasound generation, while the gold nanostructure, together with the 30 nm thick gold layer and the PDMS layer in between, forms an etalon for ultrasound detection, which uses a CW laser at a wavelength far from resonance as the probing beam. The center frequency of a pulse-echo signal recorded in the far field of the transducer is 40 MHz with -6 dB bandwidth of 57 MHz. The signal to noise ratio (SNR) from a 70 μm diameter transmit element combined with a 20 μm diameter receive element probing a near perfect reflector positioned 1.5 mm from the transducer surface is more than 10 dB and has the potential to be improved by at least another 40 dB. A high-frequency ultrasound array has been emulated using multiple measurements from the transducer while mechanically scanning an imaging target. Characterization of the device’s optical and acoustical properties, as well as preliminary imaging results, strongly suggest that all-optical ultrasound transducers can be used to build high-frequency arrays for real-time high-resolution ultrasound imaging. PMID:18986929

  8. Study of all-optical sampling using a semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Wu, Chen; Wang, Yongjun; Wang, Lina; Wang, Fu

    2017-03-01

    All-optical sampling is an important research content of all-optical signal processing. In recent years, the application of the semiconductor optical amplifier (SOA) in optical sampling has attracted lots of attention because of its small volume and large nonlinear coefficient. We propose an optical sampling model based on nonlinear polarization rotation effect of the SOA. The proposed scheme has the advantages of high sampling speed and small input pump power, and a transfer curve with good linearity was obtained through simulation. To evaluate the performance of sampling, we analyze the linearity and efficiency of sampling pulse considering the impact of pulse width and analog signal frequency. We achieve the sampling of analog signal to high frequency pulse and exchange the positions of probe light and pump light to study another sampling.

  9. Invited Article: All-optical multichannel logic based on coherent perfect absorption in a plasmonic metamaterial

    NASA Astrophysics Data System (ADS)

    Papaioannou, Maria; Plum, Eric; Valente, João; Rogers, Edward T. F.; Zheludev, Nikolay I.

    2016-12-01

    The exponential growth of telecommunications bandwidth will require next generation optical networks, where multiple spatial information channels will be transmitted in parallel. To realise the full potential of parallel optical data channels, fast and scalable multichannel solutions for processing of optical data are of paramount importance. Established solutions based on the nonlinear wave interaction in photorefractive materials are slow. Here we experimentally demonstrate all-optical logical operations between pairs of simulated spatially multiplexed information channels using the coherent interaction of light with light on a plasmonic metamaterial. The approach is suitable for fiber implementation and—in principle—operates with diffraction-limited spatial resolution, 100 THz bandwidth, and arbitrarily low intensities, thus promising ultrafast, low-power solutions for all-optical parallel data processing.

  10. All-optical repetition rate multiplication of pseudorandom bit sequences based on cascaded TOADs

    NASA Astrophysics Data System (ADS)

    Sun, Zhenchao; Wang, Zhi; Wu, Chongqing; Wang, Fu; Li, Qiang

    2016-03-01

    A scheme for all-optical repetition rate multiplication of pseudorandom bit sequences (PRBS) is demonstrated with all-optical wavelength conversion and optical logic gate 'OR' based on cascaded Tera-Hertz Optical Asymmetric Demultiplexers (TOADs). Its feasibility is verified by multiplication experiments from 500 Mb/s to 4 Gb/s for 23-1 PRBS and from 1 Gb/s to 4 Gb/s for 27-1 PRBS. This scheme can be employed for rate multiplication for much longer cycle PRBS at much higher bit rate over 40 Gb/s when the time-delay, the loss and the dispersion of the optical delay line are all precisely managed. The upper limit of bit rate will be restricted by the recovery time of semiconductor optical amplifier (SOA) finally.

  11. All-optical pseudorandom binary sequence generator with TOAD-based D flip-flops

    NASA Astrophysics Data System (ADS)

    Zoiros, K. E.; Das, M. K.; Gayen, D. K.; Maity, H. K.; Chattopadhyay, T.; Roy, J. N.

    2011-09-01

    An all-optical pseudo random binary sequence (PRBS) generator is designed using serially interconnected discrete Terahertz Optical Asymmetric Demultiplexer (TOAD)-based D flip-flops in a configuration exactly like the standard electronic setup. The performance of the circuit is evaluated through numerical simulation, which confirms its feasibility in terms of the choice of the critical parameters. The proposed scheme has been theoretically demonstrated for a 3-bit and 7-bit degree PRBS but can be extended to higher order by means of additional TOAD-based D flip-flops. Thus it can constitute an efficient solution for implementing all-optically a PRBS in an affordable, controllable and realistic manner.

  12. All-optical photoacoustic microscopy based on plasmonic detection of broadband ultrasound

    NASA Astrophysics Data System (ADS)

    Wang, Tianxiong; Cao, Rui; Ning, Bo; Dixon, Adam J.; Hossack, John A.; Klibanov, Alexander L.; Zhou, Qifa; Wang, Anbo; Hu, Song

    2015-10-01

    We report on an implementation of all-optical photoacoustic microscopy (PAM), which capitalizes on the effect of surface plasmon resonance (SPR) for optical detection of ultrasound. The SPR sensor in our all-optical PAM shows, experimentally, a linear response to the acoustic pressure from 5.2 kPa to 2.1 MPa, an ultra-flat frequency response (±0.7 dB) from 680 kHz to 126 MHz, and a noise-equivalent pressure sensitivity of 3.3 kPa. With the broadband ultrasonic detection, our SPR-PAM has achieved high spatial resolution with relatively low anisotropy (i.e., 2.0 μm laterally and 8.4 μm axially). Three-dimensional high-resolution imaging of a single melanoma cell is demonstrated.

  13. All-optically driven system in ultrasonic wave-based structural health monitoring

    NASA Astrophysics Data System (ADS)

    Bi, Siwen; Wu, Nan; Zhou, Jingcheng; Zhang, Haifeng; Wang, Xingwei

    2016-04-01

    Ultrasonic wave based structural health monitoring (SHM) is an innovative method for nondestructive detection and an area of growing interest. This is due to high demands for wireless detection in the field of structural engineering. Through optically exciting and detecting ultrasonic waves, electrical wire connections can be avoided, and non-contact SHM can be achieved. With the combination of piezoelectric transducer (PZT) (which possesses high heat resistance) and the noncontact detection, this system has a broad range of applications, even in extreme conditions. This paper reports an all-optically driven SHM system. The resonant frequencies of the PZT transducers are sensitive to a variety of structural damages. Experimental results have verified the feasibility of the all-optically driven SHM system.

  14. All-optical Fresnel lens in coherent media: controlling image with image.

    PubMed

    Zhao, L; Duan, Wenhui; Yelin, S F

    2011-01-17

    We theoretically explore an all-optical method for generating tunable diffractive Fresnel lenses in coherent media based on electromagnetically induced transparency. In this method, intensity-modulated images in coupling light fields can pattern the coherent media to induce the desired modulo-2π quadratic phase profiles for the lenses to diffract probe light fields. We characterize the focusing and imaging properties of the induced lenses. In particular, we show that the images in coupling fields can flexibly control the images in probe fields by diffraction, where large focal length tunability from 1 m to infinity and high output (∼ 88% diffraction efficiency) can be achieved. Additionally, we also find that the induced Fresnel lenses can be rapidly modulated with megahertz refresh rates using image-bearing square pulse trains in coupling fields. Our proposed lenses may find a wide range of applications for multimode all-optical signal processing in both the classical and quantum regimes.

  15. Ultrafast all-optical temporal differentiators based on CMOS-compatible integrated-waveguide Bragg gratings.

    PubMed

    Rutkowska, K A; Duchesne, D; Strain, M J; Morandotti, R; Sorel, M; Azaña, J

    2011-09-26

    We report the first realization of integrated, all-optical first- and higher-order photonic differentiators operating at terahertz (THz) processing speeds. This is accomplished in a Silicon-on-Insulator (SOI) CMOS-compatible platform using a simple integrated geometry based on (π-)phase-shifted Bragg gratings. Moreover, we achieve on-chip generation of sub-picosecond Hermite-Gaussian pulse waveforms, which are noteworthy for applications in next-generation optical telecommunications.

  16. Temporal gap solitons and all-optical control of group delay in line-defect waveguides.

    PubMed

    Malaguti, S; Bellanca, G; Combrié, S; de Rossi, A; Trillo, S

    2012-10-19

    We show that a model based on anticrossing between highly group velocity-mismatched gap-guided and index-guided modes describes gap soliton propagation in photonic crystal waveguides. Such nonlinear solutions can be exploited for exploring new regimes such as all-optical control of group velocity (dispersionless slow light) over a submillimeter length scale, and propagation beyond the linear modal cutoff. The results are validated by means of finite-difference time domain simulations.

  17. Raman mediated all-optical cascadable inverter using silicon-on-insulator waveguides.

    PubMed

    Sen, Mrinal; Das, Mukul K

    2013-12-01

    In this Letter, we propose an all-optical circuit for a cascadable and integrable logic inverter based on stimulated Raman scattering. A maximum product criteria for noise margin is taken to analyze the cascadability of the inverter. Variation of noise margin for different model parameters is also studied. Finally, the time domain response of the inverter is analyzed for different widths of input pulses.

  18. All-optical multibit address recognition at 20 Gb/s based on TOAD

    NASA Astrophysics Data System (ADS)

    Yan, Yumei; Wu, Jian; Lin, Jintong

    2005-04-01

    All-optical multibit address recognition at 20 Gb/s is demonstrated based on a special AND logic of terahertz optical asymmetric demultiplexer (TOAD). The semiconductor optical amplifier (SOA) used in the TOAD is biased at transparency status to accelerate the gain recovery. This is the highest bit rate that multibit address recognition is demonstrated with SOA-based interferometer. The experimental results show low pattern dependency. With this method, address recognition can be performed without separating address and payload beforehand.

  19. New all-optical wavelength auto-router based on spatial solitons.

    PubMed

    Wu, Yaw-Dong

    2004-09-06

    We propose a novel all-optical wavelength auto-router based on spatial solitons. By using the swing effect of spatial solitons in a Kerr-type nonlinear medium, the proposed nonlinear waveguide structure could function as a self-routing wavelength division multiplexer (WDM). It could be a potential key component in the applications of ultra-high-speed and ultra-high-capacity optical communications and optical data processing systems.

  20. Manually operated coded switch

    DOEpatents

    Barnette, Jon H.

    1978-01-01

    The disclosure relates to a manually operated recodable coded switch in which a code may be inserted, tried and used to actuate a lever controlling an external device. After attempting a code, the switch's code wheels must be returned to their zero positions before another try is made.